instruction facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. i i editorial since my appointment as a new editor-in-chief of facta universitatis: series electronics and energetics, in october 2013, we have published the series of three special anniversary issues dedicated to the journal’s majestic age of a quarter of century, one special issue devoted to the internet of things an emerging paradigm and a cutting edge technology, as well as 9 regular issues. over the past three years, we were receiving submissions and publishing papers from a very broad geographical area, making facta universitatis: series electronics and energetics a truly international journal. the published papers in both special and regular issues not only met the goals consistent with our focused aims, but have surpassed our expectation in quality and practical value. as a consequence, facta universitatis: series electronics and energetics has recently been selected for coverage in thomson reuters’ products and services, and beginning with all content published in 2016, the journal will be indexed and abstracted in recently launched emerging sources citation index (esci). note that journals in esci have passed an initial editorial evaluation and can continue to be considered for inclusion in scie that has rigorous evaluation procedure and selection criteria. therefore, our job is not finished yet and the journal will have to be developed and improved further. we will continue to insist that all published papers are of high quality and practical value, thus leading to their worldwide citation, i.e. to the journal’s inclusion in scie. this is the fun part of this job, often it is a journey that is more enjouable than the destination itself. as the editor-in-chief, i, along with our editorial team, promise to continue to develop and improve facta universitatis: series electronics and energetics in order to keep it at the forefront of science and technology. ninoslav stojadinović editor-in-chief facta universitatis series: electronics and energetics vol. 34, no 4, december 2021, pp. 547-555 https://doi.org/10.2298/fuee2104547s © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper a comparative study of optimization methods for eddy-current characterization of aeronautical metal sheets ben moussa oum salama1, ayad ahmed nour el islam1, tarik bouchala2 1electrical engineering department, faculty of applied sciences, lab. lage, ouarglauniversity, algeria 2electrical engineering department, mohamed boudiaf university msila, algeria abstract. this paper presents eddy current non-destructive characterization of three aeronautical metal sheets by deterministic and stochastic inversion methods. this procedure consists of associating the finite element method with three optimization algorithms (simplex method and genetic and particle swarm algorithms) simultaneously determine electric conductivity, magnetic permeability and thickness of al, ti and 304l stainless steel metal sheets largely used in aeronautical industry. indeed, the application of these methods has shown the performance of each inversion algorithms. as a result, while doing a qualitative and quantitative comparison, it was found that the simplex method is more advantageous in comparison with genetic and particle swarm algorithms, since it is faster and more stable . key words: eddy current sensor, inverse problem, genetic algorithm, simplex method, particle swarm optimization. 1. introduction eddy current non destructive testing is a well-known method for material characterization, which is sensitive to conductive materials properties, such as electrical conductivity and magnetic permeability [1]. in aeronautic domain, planes are periodically subjected to inspection and maintenance operations as is the case of algerian airline maintenance society. in the non-destructive testing (ndt) division, the eddy current technique is often used for inspecting and evaluating plane sensitive parts. among these applications, we perform measurement of thickness and electric conductivity of metal sheets [2-3]. received march 25, 2021; received in revised form august 14, 2021 corresponding author: ben moussa oum salama electrical engineering department, faculty of applied sciences, lab. lage, ouarglauniversity, algeria e-mail: benmoussa.oumsalama@univ-ouargla.dz 548 b. m. o. salama, a. a. n. el islam, t. bouchala in industrial automatic application, several iterative inversion methods are used to accomplish this objective. in general, the flowchart constitutes an iteration buckle containing the forward model associated to an inversion algorithm. consequently, we recall that the analytical forward method of dodd and deeds gives an exact solution but the skin and the proximity effects in the exciting coil turns are neglected [4-5]. the aim of this paper is to associate the finite element method (fem) with the optimization ones to estimate thickness, electric conductivity and magnetic permeability of al, ti and stainless steel 304l metal sheets largely used in aeronautic construction. from this association there results a comparative study of starting search interval, global searching time and the relative error for both optimization methods in order to determine the more advantageous one in terms of reliability and rapidity. 2. aeronautic construction materials an airplane cockle is made, in the majority of cases, of aluminum, because its volume density is very low and that presents an advantage in aeronautics. additionally, this material is also much appreciated since it has a good resistance to corrosion and is easily malleable which makes construction of different parts easier [3]. on the other hand, stainless steel 304l is less sensitive to corrosion effect and ideal for piece machining and welding in aeronautics applications. nowadays, titanium is a key element of aeronautic and spatial construction since its use is justified by its attractive characteristics: incomparable holding to corrosion and oxidization, nonmagnetic, good thermal and mechanical resistance. in fact, with such properties, titanium alloy constitutes an element of major quality for planes conception, fig. 1. fig. 1 aeronautic construction materials [3]. a comparative study of optimization methods for eddy-current characterization of aeronautical metal sheets 549 3. description of the forward model the geometry of the considered problem is illustrated schematically in fig.2. in this study, the metal sheet presents a flat surface with a thin nonconductive coating. in actual situation, when using an eddy current to measure thickness and electric conductivity, it is important to ensure that the other factors (geometry, the specimen temperature and liftoff) are kept under control [5,9]. a pancaketype, probe formed of coil is perpendicular to the tested metal sheet surface. the geometrical and physical characteristics are given in table 1. table 1 characteristics of the modeled system coil values current intensity frequency inner radius length high 0.04 [a] 10 [khz] 5.35 [mm]. 2.35 [mm]. 2.3 [mm]. metal sheet thickness electric conductivity magnetic permeability 2 [mm]. that of al, inox 304l, ti that of al, inox 304l, ti 4. mathematical formulation of the electromagnetic forward model the maxwell's equations, describing physical phenomena of eddy current sensing [611] are defined as follows jjh += s , (1) t  −= b e , (2) 0= b , (3) where h is the magnetic field, j is the induced eddy-current, js is the current density injected in the coils, e is the electric field, b is the magnetic flux density, and t denotes the time [7-12]. by considering constitutional relations linking the electromagnetic field to the properties of the material: hb = , (4) ej = , (5) where µ is the magnetic permeability, and σ is the electrical conductivity of the materials [13].magnetic vector potential a is being defined as: fig. 2 studied device configuration 550 b. m. o. salama, a. a. n. el islam, t. bouchala ab = . (6) differential equation describing the eddy current testing phenomena is then expressed by: 1 ( ) s t   = −    a a j (7) by considering the angular frequency 𝜔 and according to the condition of coulomb-gauge 0= a , the electromagnetic equation in time-harmonic regime, using complex amplitudes [8] is expressed by: sjaa +−=       j)rot( 1 rot (8) where a represents the magnetic vector potential, j is the imaginary unit, ω is the angular frequency of the excitation current (rad/s), μ is the magnetic permeability of the media involved (h/m), σ is the electrical conductivity (s/m), and j is the current density (a/m2) [10]. finite element formulation for the 2d axisymmetric eddy current phenomena was developed in many works. for axisymmetric geometries, eq. (8) reduces to the 2d form [2,4]. .j 11 2 22 2 2 sja r a z a r a rr a −=        −   +   +    (9) this equation describes the problem shown in figure 3. fig. 3 finite element modeling procedure a comparative study of optimization methods for eddy-current characterization of aeronautical metal sheets 551 5. inversion steps for the iterative inversion, the process is constituted of an iteration buckle containing the forward model that calculates the sensor impedance (zc). the output (zc) is compared to the measured value (zm), than the obtained error is used by the optimization algorithm (genetic and particle swarm optimization algorithms) as an input in order to enhance the estimated parameters. for each iteration, this strategy minimizes the obtained error (fitness function). hence, the inversion process is accepted and stopped when the error is smaller than the tolerance [14,15]. we recall that in genetic algorithm (ga), firstly the population individuals are created according to a random process. each individual takes a set of the evaluation parameters. then, the fitness function is iteratively computed for all individuals. following that, the couples are mixed, and during the mutation step this method through which populations' genetic variety is maintained from one generation to the next. in order to generate a superior population, the genetic operators were used in a way that was inspired by natural evolution [16]. on the other hand, the simplex method is a very powerful local descent direct search method for minimizing a real-valued function. in each iteration, it begins with a simplex specified by n+1verticesand the associated function values. one or more test points are computed, along with their function values. at the end of each iteration, a new simplex is obtained, so as to satisfy some descent conditions regarding the values of the fitness function [17,18]. the inverse problem principle is based on the following steps: finding parameters of (e,σ,µ), and deducing values of zc(e,σ,µ)=zm. with zc is the impedance of the sensor and zm is the measured impedance. we have taken values from known properties (thickness, conductivity and magnetic permeability), and the measured values are replaced by those obtained by solving the direct problem by the finite element method. eq. (10) can be changed by minimizing the following fitness function: 2 1 [ ( , , )]1 , 2 m cn i i m i i z z e s z= −   =  (10) where n is the length of the measurement array. fig. 4 iterative inversion procedure 552 b. m. o. salama, a. a. n. el islam, t. bouchala 6. results and discussion an iterative inversion algorithm is elaborated in order to evaluate physical and geometrical properties of metal sheets (i.e. electric conductivity σ, magnetic permeability μ and thickness e). the inversion is achieved by stochastic methods, such as genetic and particle swarm algorithms combined with a deterministic one based on the nelder-mead algorithm associated to the finite element method (fem) [9]. it uses selected evaluation parameters and gives the evaluated properties, fig. 4. previous parameters and the fitness function according to iteration number are given in the following figures (figs. 5-7). we recall that these results are obtained for al, ti and 304l stainless steel metal sheets for which the characteristics are reported on table 2. table 2 metal sheets characteristics electric conductivity [ms/m] magnetic permeability thickness [mm] al 37.7 1 2 ti 2.52 25 2 stainless steel 304l 1.36 160 2 6.1. obtained results to show the precision and the speed of the used inversion techniques, we have implemented them in matlab environment. the obtained results are shown in the following figures: fig. 5 electric conductivity obtained for stainless steel, aluminum and titanium fig. 6 magnetic permeability obtained for stainless steel, aluminum and titanium a comparative study of optimization methods for eddy-current characterization of aeronautical metal sheets 553 fig. 7 thickness obtained for stainless steel, aluminum and titanium the computing time and the error rate between the real and estimated values of three optimization algorithms are summarized on table 3. table 3 the results comparison of three optimization algorithms real values ga pso sim estimated values estimated values estimated values stainless steel 304l σ(ms/m) 1.36 1.34 1.34 1.35 µ 160 158 158 159 e(mm) 2 1.8 1.8 2 al σ(ms/m) 37.7 37.5 37.6 37.6 µ 1 1.2 0.99 1 e(mm) 2 1.9 2 2 ti σ(ms/m) 2.52 2.54 2.51 2.53 µ 25 23 24 25 e(mm) 2 2 2.3 2 computing time (s) 1750 1420 224 error (%) 1.08 1.02 0.35 6.2. discussion through this application, we have noticed that the obtained results by using simplex, genetic and particle swarm algorithms are very accurate and relate to the actual ones. indeed, these results confirm the reliability and the robustness of the inversion procedure. besides, we have deduced that ga and pso are very slow in comparison to the sim because of the height number of fitness function to be calculated for each iteration. on the other hand, to reach a satisfactory precision, the population size has to be increased to a certain level since it increases calculation time. in fact, the sim method is more privileged because it is faster and its algorithm performance does not change while restarting calculation. nevertheless, the simplex method introduces some issues like regulating parameters choice (reflection, expansion, contraction) and those of the starting step. 554 b. m. o. salama, a. a. n. el islam, t. bouchala 7. conclusion periodically, aircrafts are subjected to security and maintenance operations by using the nondestructive testing methods. in this field, the eddy current technique is widely used for evaluating and controlling relevant elements of an aircraft. during our traineeship in the algerian airline nondestructive testing edifice, we noticed that the electric conductivity, magnetic permeability and thickness of metal sheets measurements are carried out separately which increases the inspection time. absolutely, when using inverse algorithms involving artificial intelligence, the measurement can be made simultaneously and rapidly. as stated above, an inversion procedure using the optimization algorithms associated with finite element method is elaborated in the matlab environment. a comparative study between these three methods (ga, sim, and pso) for solving the eddy current inversion problem has been proposed in this paper. as a result, we have deduced that fem-ga and fem-pso are very slow in comparison to the fem-sim because of the height number of fitness function calculation for each iteration. on the other hand, to reach a satisfactory precision, the population size has to be increasedto a certain extent since it increases the calculation time. in fact, the fem-sim is more privileged because it is faster and its algorithm performance does not change while restarting calculation [17,18]. references [1] g. cosarinsky, j. fava, m. ruch and a. bonomi, "material characterization by electrical conductivity assessment using impedance analysis", procedia mater. sci., vol. 9, pp. 156–162, 2015. [2] j. garcia-martin, j. gomez-gill and e. vazquez-sanchez, "non-destructive techniques based on eddy current testing", sensors j., vol 11, pp. 2525–2565, feb. 2011. [3] abdou a., bouchala t., abdelhadib.,guettafi a.,benoudjita., "real-time eddy current measurement of aeronautical construction material coating thickness", instrum. meas. metrol., vol. 18, no. 5, pp. 3–4, nov. 2019. [4] x. ma, a. j. peyton and y. y. zhaob, "measurement of the electrical conductivity of open-celled aluminum foam using non-contact eddy current techniques". ndt e int., vol. 38, no. 5, pp. 359–367, 2005. [5] c. v. dodd and w. e. deeds, "analytical solutions to eddy-current probe-coil probe problems", j. appl. phys., vol. 39, no. 6, pp. 2829–2839, sep. 1968. [6] t. bouchala, b. abdelhadi and a. benoudjit, "fast analytical modeling of eddy current non-destructive testing of magnetic material", j. nondestruct. eval., vol. 32, no. 3, pp. 294–299, sept. 2013. [7] t. bouchala, b. abdelhadi and a. benoudjit, "novel coupled electric field method for defect characterization in eddy current non-destructive testing", j. nondestruct. eval., vol. 32, no. 4, pp. 1–11, sept. 2013. [8] t. bouchala, b. abdelhadi and a. benoudjit, "new contactless eddy current non-destructive methodology of electric conductivity measurement", j. nondestruct. test eval., vol. 30, no. 1, pp. 63–73. jan. 2015. [9] t. bouchala, b. abdelhadi and a. benoudjit, "application of coupled electric field method for eddy current non-destructive inspection of multilayer structures", j. nondestruct. eval., vol. 30, no. 2, pp. 8– 10, march 2015. [10] d. vielldent, "optimisation des outils en forgeage a chaud par simulation elément finis et méthodes inverse. application a des problèmes industriels", thèse de doctorat, ecole nationale supérieure des mines de paris, 1999. [11] b. maouche and m. feliachi, "a half analytical formulation for the impedance variation in axisymmetric modeling of eddy current non-destructive testing", epj appl. phys., vol. 33, pp. 59-67, feb. 2006. [12] b. maouche, a. rezak and m. feliachi, "semi analytical calculation of the impedance of differential sensor for eddy current non-destructive testing", ndt e int., vol. 42, no. 7, pp. 573-580, oct. 2009. a comparative study of optimization methods for eddy-current characterization of aeronautical metal sheets 555 [13] s. zerguini, b. maouche, m. latreche and m. feliachi, "a coupled fictitious electric circuit’s method for impedance of a sensor with ferromagnetic core calculation. application to eddy currents nondestructive testing", epj appl. phys., vol. 48, no. 3, pp. 31202-31207, dec. 2009. [14] j. blitz, electrical and magnetic methods of non-destructive testing. new york: chapman &hall, 1997. [15] y. yating, d. pingan and x. luchuan, "coil impedance calculation of an eddy current sensor by the finite element method", russ. j. nondestruct. test., vol. 44, no. 4. pp. 296–302, april 2008. [16] v. p. lunin, "phenomenological and algorithmic method for the solution of inverse problem of electromagnetic testing", russ. j. nondestruct. test., vol. 42, no. 6, pp. 353–362, june 2006. [17] i. dolapchiev, k. brandisky and p. ivanov, "eddy current testing probe optimization using a parallel genetic algorithm", serb. j. electr. eng., vol. 5, no. 1, pp. 39–48, may 2008. [18] a. bouzidi, b. maouche and m. feliachi, "pulsed eddy current nde of groove dimensions by inversion with simplex method associated with coupled electric circuits method", ieee trans. magn., vol. 51, no. 3, pp 55–61, march 2015. instruction facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. 81 91 doi: 10.2298/fuee1701081v on the numerical computation of cylindrical conductor internal impedance for complex arguments of large magnitude * slavko vujević, dino lovrić university of split, faculty of electrical engineering, mechanical engineering and naval architecture, split, croatia abstract. in this paper a numerical algorithm for computation of per-unit-length internal impedance of cylindrical conductors under complex arguments of large magnitude is presented. the presented algorithm either numerically solves the scaled exact formula for internal impedance or employs asymptotic approximations of modified bessel functions when applicable. the formulas presented can be used for computation of per-unit-length internal impedance of solid cylindrical conductors as well as tubular cylindrical conductors. key words: internal impedance, modified bessel functions, large function arguments, scaling. 1. introduction internal impedance per-unit-length (pul) or surface impedance of cylindrical conductors is required in analysis of numerous electromagnetic problems [1-5]. this pul internal impedance can be computed using various formulas which contain special functions such as bessel functions and modified bessel functions [6]. whatever formula is employed the results are valid only for smaller function arguments whereas for larger function arguments stability issues often occur. these issues are directly connected with computing special functions (bessel functions and modified bessel functions) under large parameters which in some cases yield extremely large values and in some cases extremely low values. in addition, these extreme values are multiplied, divided, subtracted and added which considerably makes thing worse. in this paper an algorithm is presented which circumvents the mentioned issues by first scaling the employed formulas to avoid overflow/underflow issues and then solving the expressions for modified bessel functions in two ways either by numerical integration or by using asymptotic approximations when applicable [7].  received february 25, 2016; received in revised form april 7, 2016 corresponding author: slavko vujević university of split, faculty of electrical engineering, mechanical engineering and naval architecture, split, croatia (e-mail: vujevic@fesb.hr) * an earlier version of this paper was presented at the 12th international conference on applied electromagnetics (пес 2015), august 31 september 2, 2015, in niš, serbia [1]. 82 s. vujević, d. lovrić the formulas presented in the paper are applicable to solid and tubular cylindrical conductors. all presented formulas are for a tubular cylindrical conductor, but by introducing the value zero for internal radius of the tubular cylindrical conductor, the pul internal impedance of a solid cylindrical conductor can be obtained. this model for computing pul internal impedance of single-layer tubular conductors represent a basis for a more general model which will be able to compute pul internal impedance of a multilayered tubular conductor which is currently in development. 2. formula for computation of tubular cylindrical conductor internal impedance computation of pul internal impedance of tubular cylindrical conductors (fig. 1), which takes the skin effect into account but ignores the proximity effect, can be performed using various formulas based on different special functions. it has been concluded in the previous work of the authors of this paper that, from the numerical stability standpoint, the most suitable formula for computation of pul internal impedance of tubular conductors is based on modified bessel functions of the first and second kind [7]: 1 0 0 1 1 1 1 1 ( ) ( ) ( ) ( ) 2 ( ) ( ) ( ) ( ) i e e i e i e e i k r i r k r i r z r k r i r k r i r                              (1) exp (1 ) 4 j j                    (2) where σ is the electrical conductivity of the conductor material, re is the external radius of the conductor, ri is the internal radius of the conductor, 0i and 1i are complex-valued modified bessel function of the first kind of order zero and one, 0k and 1k are complex-valued modified bessel function of the second kind of order zero and one (also called kelvin functions),  is the complex wave propagation constant, α is the attenuation constant, µ is the permeability of the conductor material, ω is the circular frequency and j is the imaginary unit. fig. 1 cross-section of a tubular cylindrical conductor as it has been shown in [7] by rearranging formula (1) and scaling it by an appropriate factor, the following formula for pul internal impedance of tubular conductors can be obtained: numerical computation of cylindrical conductor internal impedance 83 0 0 0 1 1 1 1 1 1 1 ( ) ( ) exp[ 2 ( )] ( ) ( ) ( ) 2 ( ) ( ) ( ) exp[ 2 ( )] ( ) ( ) s s i e e is s s e i e s s s e e i e e is s i e k r k r r r i r i r i r z r i r k r k r r r i r i r                                           (3) where the scaled modified bessel functions are: ( ) exp( ) ( )s n ni r r i r        (4) ( ) exp( ) ( )s n nk r r k r       (5) modified bessel functions of the first kind are scaled down exp( )r  times whereas modified bessel functions of the second kind are scaled up exp( )r  times. in such a way quantities of similar magnitudes are obtained which consequently enables more stable computation. the computation of internal impedance z can be further simplified depending on the magnitude of ( )e ir r   . numerical analysis has shown that for ( ) 19e ir r    computation of z must be performed using (3) in order to maintain high accuracy. however, for larger magnitudes of ( )e ir r   simplifications of formula (3) can be performed without loss of accuracy. the following relation presents these simplifications and their interval of applicability: 0 1 15 15 ( ) 19 ( ) 10 2 ( ) ( ) 10 2 s e e is e e e i e i r ; r r r i r z ; r r r                               (6) as can be seen from (3) and (6), it is imperative to compute scaled modified bessel functions of the first and second kind as accurately as possible. the proposed numerical procedure for achieving this is addressed in the following section of the paper. 3. computation of scaled modified bessel functions in the developed algorithm for function parameters α∙r ≤ 25 integral representation of scaled modified bessel functions of the first and second kind is used. integral representation of modified bessel functions is more suitable than the infinite sum representation because the scaling factors given in (4-5) can be easily included in the integral representation of modified bessel functions. this is not the case when using the infinite sum representation. integrals that occur in modified bessel functions of the first and second kind are solved numerically using adaptive simpson rule. on the other hand, for function parameters α∙r > 25 computation of scaled modified bessel functions of the first and second kind is performed using asymptotic approximations. through extensive numerical analysis it has been found that for function parameter values larger than 25, asymptotic approximations of modified bessel functions produce results of equal accuracy as the numerical solution of integral representation of modified bessel functions but in less computation time. 84 s. vujević, d. lovrić 3.1. computation of scaled modified bessel functions of the first kind for α∙r ≤ 25 modified bessel function of the first kind of order zero in its integral form can be expressed by the following equation [8]: / 2 0 0 0 2 ( ) cos( sin ) exp( ) ( )s i r j r d r i r                      (7) further simplification of the previous expression and separation of real and imaginary parts yields the following relation for scaled modified bessel function of the first kind of order zero: / 2 0 0 / 2 0 1 ( ) [exp( ) cos exp( ) cos ] [exp( ) sin exp( ) sin ] si r a a b b d j a a b b d                         (8) where a and b are given by: (sin 1)a r     (9) (sin 1)b r     (10) the separation of the real and imaginary parts is performed because these integrals are solved separately using adaptive simpson numerical integration. numerical integration yields highly accurate results because the separated functions are simple to integrate as can be seen from fig. 2 and fig. 3 which depict how the real and imaginary parts of equation (8) behave on the integration interval for various values of parameter α∙r. fig. 2 real part of scaled modified bessel function of the first kind of order zero for various values of parameter α∙r numerical computation of cylindrical conductor internal impedance 85 fig. 3 imaginary part of scaled modified bessel function of the first kind of order zero for various values of parameter α∙r integral representation of modified bessel function of the first kind of order one can be expressed by the following equation [8]: / 2 1 0 1 2 ( ) sin( sin ) sin exp( ) ( )s i r j j r d r i r                         (11) as before, by simplification of expression (11) and separation of real and imaginary parts, the following relation for scaled modified bessel function of the first kind of order one can be obtained: / 2 1 0 / 2 0 1 ( ) [exp( ) cos exp( ) cos ] sin [exp( ) sin exp( ) sin ] sin si r a a b b d j a a b b d                             (12) two integrals present in equation (12) are again solved numerically using adaptive simpson rule. fig. 4 and fig. 5 depict how the real and imaginary parts of equation (12) behave on the integration interval for various values of parameter α∙r. 86 s. vujević, d. lovrić fig. 4 real part of scaled modified bessel function of the first kind of order one for various values of parameter α∙r fig. 5 imaginary part of scaled modified bessel function of the first kind of order one for various values of parameter α∙r 3.2. computation of scaled modified bessel functions of the first kind for α∙r > 25 asymptotic approximation of scaled modified bessel function of the first kind can be expressed by [8]: 2 2 1 1 [4 (2 1) ] 1 ( ) ~ 1 ( 1) ; 0, 1 ! (8 )2 m s m t n m m n t i r n m rr                                 (13) numerical computation of cylindrical conductor internal impedance 87 from the previous expression asymptotic approximations of scaled modified functions of the first kind of orders zero and one can easily be deduced: 0 1 1 ( ) ~ 1 ( )2 na s m m m c i r rr                 (14) 1 1 1 ( ) ~ 1 ( )2 na s m m m d i r rr                 (15) where:                r r r r r na 10000for3 10000300for5 300100for7 10050for9 5025for12 (16) 2 1 ( 1) [ (2 1) ] 8 ! m m m m t c t m          (17) 1 2 1 ( 1) [4 (2 1) ] 8 ! m m m m t d t m           (18) the expressions for cm and dm are deduced from (13) and are also used for asymptotic approximations of modified bessel functions of the second kind. values of na have been determined through numerical analysis. 3.3. computation of scaled modified bessel functions of the second kind for α∙r ≤ 25 integral present in the expression for the modified bessel function of the second kind of order zero has an upper integral limit that tends to infinity [8]. fortunately, the integral function rapidly tends to zero as the function argument increases so the infinite limit can be substituted with a finite limit tm0 without loss of accuracy: 0 0 0 0 ( ) exp( cosh ) exp( cosh ) mt k r r t dt r t dt                (19)          r tm 65 1cosh 1 0 (20) now the scaled modified bessel function of the second kind of order zero can be deduced from (19): 0 0 0 0 0 ( ) exp( ) cos exp( ) sin m mt t sk r d d dt j d d dt            (21) (cosh 1)d r t    (22) 88 s. vujević, d. lovrić the two integrals present in equation (21) are again solved numerically using adaptive simpson rule with high accuracy. fig. 6 and fig. 7 depict how the real and imaginary parts of equation (21) behave on the integration interval for various values of parameter α∙r. fig. 6 real part of scaled modified bessel function of the second kind of order zero for various values of parameter α∙r fig. 7 imaginary part of scaled modified bessel function of the second kind of order zero for various values of parameter α∙r similarly as for the modified bessel function of second kind of order zero, the integral present in the expression for modified bessel function of second kind of order one [8] can be replaced with a finite limit tm1: 1 1 0 0 ( ) exp( cosh ) cosh exp( cosh ) cosh mt k r r t t dt r t t dt                  (23) 25.001  mm tt (24) numerical computation of cylindrical conductor internal impedance 89 simplification of expression (23) yields the following expression for scaled modified bessel function of the second kind of order one: 1 1 1 0 0 ( ) exp( ) cos cosh exp( ) sin cosh m mt t sk r d d t dt j d d t dt              (25) as before the two integrals present in equation (25) are solved numerically using adaptive simpson rule with high accuracy. fig. 8 and fig. 9 depict how the real and imaginary parts of equation (25) behave on the integration interval for various values of parameter α∙r. fig. 8 real part of scaled modified bessel function of the second kind of order one for various values of parameter α∙r fig. 9 imaginary part of scaled modified bessel function of the second kind of order one for various values of parameter α∙r 90 s. vujević, d. lovrić 3.4. computation of scaled modified bessel functions of the second kind for α∙r > 25 asymptotic approximation of scaled modified bessel functions of the second kind is given by the following expression [8]: 2 2 1 1 4 (2 1) ( ) ~ 1 ; 0, 1 2 ! (8 ) m s t n m m n t k r n r m r                                  (26) from the previous expression asymptotic approximations of scaled modified functions of the second kind of orders zero and one can be deduced: 0 1 ( 1) ( ) ~ 1 2 ( ) mna s m m m c k r r r                 (27) 1 1 ( 1) ( ) ~ 1 2 ( ) mna s m m m d k r r r                 (28) where na is given by (16) whereas the coefficients cm and dm are computed from (17) and (18). 4. numerical examples the presented model for computation of pul internal impedance of tubular conductors was implemented into a fortran program. in order to ascertain the accuracy of obtained results and numerical stability of the model itself, a comparison is made with matlab which is used to compute pul internal impedance using the initial formula (1). both fortran and matlab employ double precision computing. it is important to note here that by using a program package which can employ more decimal places higher robustness of results would be achieved but at the expense of execution time. in the numerical example magnitudes and phase angles of z for a thin tubular copper conductor (internal radius ri = 3.8 mm and external radius re = 4 mm) are computed. the results of the comparison are presented in table 1 and table 2. table 1 comparison of magnitudes of tubular cylindrical conductor internal impedance. α∙re z (ω) proposed matlab 10-2 0.003643657122067 0.003643657122067 10-1 0.003643657122745 0.003643657122745 100 0.003643663902873 0.003643663902873 101 0.003710702668820 0.003710702668820 102 0.025181394368712 0.025181394368712 103 0.251267138203603 nan 105 25.12049572965153 nan 1010 2512043.292911872 nan 1015 251204329284.9072 nan numerical computation of cylindrical conductor internal impedance 91 table 2 comparison of phase angles of tubular cylindrical conductor internal impedance. α∙re φ (°) proposed matlab 10-2 9.30814638898·10-6 9.30814663686·10-6 10-1 9.30814668336·10-4 9.30814668521·10-4 100 9.30813198101·10-2 9.30813198100·10-2 101 9.164530090507745 9.164530090507741 102 44.85885196305934 44.85885196305934 103 44.98566888986672 nan 105 44.99985675983501 nan 1010 44.99999999856761 nan 1015 45.00000000000000 nan as can be seen from the results in table 1 and table 2, when computing formula (1) using matlab an underflow/overflow stability issue occurs for larger function parameters. these numerical instabilities are a direct consequence of the denominator consisting of subtraction of two products. when these products become identical up to the last decimal place that the program package can compute, the denominator becomes equal to zero thus resulting in a not a number value. the proposed numerical procedure successfully circumvents these issues as can be seen form the results of the analysis. 5. conclusion in this paper an algorithm for computation of pul internal impedance of cylindrical conductor under large complex function arguments is presented. the high accuracy and stability of the algorithm was achieved by selecting a formula for pul internal impedance which does not lead to undefined values for relatively small function arguments and by scaling the modified bessel functions present in this formula by an appropriate scaling factor. the developed algorithm represents a basis for computation of pul internal impedance of multilayered tubular cylindrical conductors which is in development. references [1] s. vujević, d. lovrić, "on the numerical computation of cylindrical conductor internal impedance for complex arguments of large magnitude", in proceedings of the extended abstracts of the 12th international conference on applied electromagnetics (пес 2015), niš, serbia, 2015, pp. (p1_1) 1-4. [2] p. sarajčev, s. vujević, "grounding grid analysis: historical background and classification of methods", international review of electrical engineering, vol. 4, pp. 670-683, 2009. [3] h. w. dommel, "emtp theory book, 2nd edition", microtran power system analysis corporation, 1992. [4] f. p. dawalibi, r. d. southey, "analysis of electrical interference from power lines to gas pipelines part i: computation methods", ieee transactions on power delivery, vol. 4, no. 3, pp. 1840-1846, 1989. [5] j. moore, r. pizer, "moment methods in electromagnetics techniques and applications", john wiley and sons, 2007. [6] j. a. stratton, "electromagnetic theory", john wiley & sons, 2007. [7] s. vujević, d. lovrić, v. boras, "high-accurate numerical computation of internal impedance of cylindrical conductors for complex arguments of arbitrary magnitude", ieee transactions on electromagnetic compatibility, vol. 56, pp. 1431-1438, 2014. [8] m. abramowitz, i. a. stegun, "handbook of mathematical functions with formulas, graphs, and mathematical tables", dover publications, 1964. instruction facta universitatis series: electronics and energetics vol. 32, no 1, march 2019, pp. 91-104 https://doi.org/10.2298/fuee1901091i characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells stefan ilić, vesna paunović university of niš, faculty of electronic engineering, niš, serbia abstract. dye-sensitized solar cells are the closest mankind has come to replicating nature’s photosynthesis. the type of a dye influences the efficiency of these cells. in this paper we studied curcumin dye as a sensitizer in dye-sensitized solar cells and compared it with most often used cyanidin. the results have shown that curcumin has higher efficiency and higher absorption in the visible part of the spectrum compared to cyanidin. simulation models of dye molecules, curcumin and cyanidin, are deprotonated upon adsorption on the titanium dioxide surface. the energy levels obtained from the calculation indicate a higher probability of electron transition from molecule to titanium dioxide surface in case of curcumin than in case of cyanidin. based on these results, we concluded that curcumin dye has better properties as sensitizer in dye-sensitized solar cells. key words: solar cells, curcumin, cyanidin, titanium dioxide, density functional theory, voltage-controlled resistance 1. introduction a solar cell is a renewable source of energy that directly converts visible light into electricity [2-4]. when exposed to light, the solar cell becomes the source of direct current. operation principle of all solar cells is based on photoelectric effect. there are first, second and third generations of solar cells. dye-sensitized solar cells (dssc) belong to the third generation. the major part of these cells is the nanoparticle anatase titanium dioxide coated with dye molecules. the type of the dye, the way it anchored to the tio2, directly affects the efficiency. ruthenium polypyridyl complexes are known as the most efficient pigments, they achieved almost 12% efficiency [5]. however, these pigments contain a heavy metal which has undesired environmental impact. cheaper alternative can be given by natural pigments, such as anthocyanins, betalains, chlorophyll, etc. betalains are recorded as most efficient natural pigments achieving more than 2% [6]. anthocyanins received february 28, 2018; received in revised form july 5, 2018 corresponding author: stefan ilić faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia. (e-mail: stefan.ilic@yahoo.com) * an earlier version of this paper was presented at the 61st national conference on electrical, electronic and computing engineering (etran 2017), june 5-8, 2017, in kladovo, serbia [1]. 92 s. ilić, v. paunović are very frequent in research papers that study natural pigments as sensitizers in dssc [7]. they give different sensitizing performances from various plants, absorb light at the longest wavelength and have widespread availability [8]. wongcharee et al. used extracts from rosella and blue pea flowers. solar cells sensitized by rosella (delphinidin and cyanidin) have been reported to achieve efficiency up to 0.37%, whereas extract from blue pea (ternatin) can achieve up to 0.05% [9]. tekerek et al. fabricated a solar cell also with rosella dye and compared it to black raspberry and black carrot dyes. they achieved efficiencies of 0.16%, 0.16% and 0.25%, respectively [10]. curcumin can also be a sensitizer, but it has not attracted significant research attention. kim et al. reported a dye-sensitized solar cell sensitized with curcumin dye, and showed 0.36% efficiency [11]. in this work we investigate two types of natural pigments: cyanidin extracted from raspberries and curcumin dye extracted from curcuma longa. the aim of this paper is to both experimentally and theoretically (simulation) confirm the thesis that curcumin is a better sensitizer in dye-sensitized solar cells than cyanidin. firstly, we measured current-voltage characteristics and absorption spectrum. after that, to confirm the experimental results, we simulated the models of anatase (tio2)16 cluster and cyanidin or curcumin molecule attached to it. our calculation is based on density functional theory (dft) and time-dependent density functional theory (tddft). calculations were carried out with nwchem software [12]. 2. operation principle of dsscs the main idea of dye-sensitized solar cells is to separate the light absorption process from charge collection process by using dye sensitizer with semiconductor. this process imitates the natural light harvesting procedure in photosynthesis [13]. that is why dyesensitized solar cells are the closest mankind has ever come to replicate nature's photosynthesis. to separate these two processes we could use semiconductor with wide band gap such as titanium dioxide (tio2). a dye-sensitized solar cell is composed of photoactive electrode, electrolyte and counter electrode. photoactive electrode is made of porous nanocrystalline anatase titanium dioxide deposited on fto conducting glass (fluorine doped tin oxide). fto layer is 220 nm thick and it is deposited on the glass. it enables transport of photo-generated charge carriers to the electrode and it is also transparent so the light can penetrate into the solar cell. dye is absorbed on tio2 layer to complete the photoactive electrode. counter electrode is also fto glass, but it is deposited with platinum to increase the conductivity. the space between electrodes is fulfilled with electrolyte which is based on iodide and triiodide ions (fig. 1). when sunlight passes through the photoactive electrode, molecules of the dye absorb the photons and electrons go from the homo (highest occupied molecular orbital) in the ground state to the lumo (lowest unoccupied molecular orbital) in the excited state. some of the excited electrons have enough energy to jump to the conduction band of titanium dioxide and then to diffuse to the electrode. dye molecules that lost electrons are oxidized. electrolyte gives electrons to replace the lost ones. after that, iodide molecules are oxidized. electrons from photoactive electrode flow through an external load to counter electrode and recombine with electrolyte, thus completing the circuit. hence, the operating mechanism of dye-sensitized solar cell generates electricity without irreversible http://en.wikipedia.org/wiki/molecular_orbital characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells 93 chemical changes in the cell. dye molecules play a key role in producing electricity. they need to overcome small absorption of titanium dioxide by absorbing the photon and exciting the electron. therefore, they are increasing the efficiency of solar cell. thus, the greater absorption of the dye is, the more efficient the solar cell will be. 3. dye sensitizers a dye sensitizer absorbs energy in dye-sensitized solar cell. when using natural pigments as a dye-sensitizer, a big problem is the degradation during prolonged exposure to sunlight due to uv radiation. figure 2 shows optimized molecular structures of the cyanidin and curcumin. fig. 2 optimized molecular structures of the cyanidin and curcumin. anthocyanins are widespread water-soluble pigments that can be found in many flowers, fruits and leaves of angiosperms. they are responsible for different colours (red, fig. 1 schematic structure and principle of operation of dssc. 94 s. ilić, v. paunović blue and violet) depending on the ph value [14]. they have found new application in dye-sensitized solar cells because they have significant absorption in the visible part of the spectrum. only organic dyes that contain several =o or -oh groups (for example cyanidin found in raspberry) capable of chelating to tio2 can be used as dye sensitizer. curcumin is an active ingredient of turmeric (curcuma longa). turmeric is a rhizomatous herbaceous perennial plant of the ginger family. it is used for indian spice, it has yellow color and is known as e100 (food additives). curcumin can exist in two tautomeric forms (keto – solid and enol solution). a molecule of curcumin has carbonyl and hydroxyl groups which can bind to tio2 surface. 4. models and computational details we used (tio2)16 cluster, to model anatase tio2 slab. cluster is obtained by correct ''cutting'' of anatase slab (fig. 3). for proper cutting, three conditions must be fulfilled: all titanium atoms must be coordinated to at least four oxygen atoms, all oxygen atoms must be coordinated to at least two titanium atoms, and the ratio of the number of titanium and oxygen atoms in the cluster must be 1 : 2 [15]. after optimization band gap of the (tio2)16 cluster was 4.52 ev. fig. 3 model of anatase (tio2)16 cluster before and after optimization. for all calculations a freely accessible software nwchem was used, performing density functional theory and time-dependent density functional theory for which we used b3lyp functional together with 6-31g basis set. density functional theory is a powerful tool for solving multi-stage problems in quantum mechanics. it allows the complicated nelectron wave function and its associated schrodinger equation to be replaced by much simpler single-electron equations in which the electron density is determined. we used dft to calculate band gap, homos and lumos for all structures and tddft to calculate absorption spectra of molecules. 5. fabrication of dsscs fabrication of dye-sensitized solar cell requires a preparation of titanium dioxide film, extraction of natural pigments, electrolyte preparation and solar cell assembly [16]. characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells 95 5.1. preparation of tio2 film a nanoparticle powder tio2 (p25 degussa) was used to prepare the films. water and acetic acid have been added due to the contribution to the mechanical properties of the films, i.e. good adhesion to the substrate and preventing the formation of cracks. terpineol is added to prevent particle growth, ethyl cellulose to achieve porosity of the films due to decomposition during thermal annealing. the films were deposited with a doctor-blade technique on an fto glass. doctor-blade technique is process of paste deposition on some surface by a razor blade, while the scotch tape is used as a pattern which gives the shape to the deposited layer and uniform thickness of the film about 40 μm. quadratic shapes were made with dimension 5×5mm with initial thickness 40 μm and final thickness 10-11 μm, after drying and thermal annealing. after the deposition, the films were left at room temperature for a few minutes, after which each film due to calcination was treated with the procedure: at 120°c/10 min, at 250°c/10 min, at 400°c/10 min, at 450°c/5 min and finally at 500°c/15 min, similar to the procedure presented elsewhere [17]. 5.2. natural dyes preparation and photoactive electrode formation anthocyanins are extracted from frozen raspberries. raspberries are crushed in mortar and pestle until they became juicy. curcumin was extracted from commercially purchased turmeric powder. the preparation process involved the dissolution of 5 grams of turmeric powder in ethanol. the prepared solutions were stored at room temperature and in a dark place to prevent their photodegradation. photoactive electrodes are made by soaking fto glasses with tio2 layer in crushed raspberries or in solution of turmeric. they can stay in from several minutes to several hours, while dye molecules from the raspberries and turmeric naturally adsorb onto the titania particles. tio2 layer absorbs more dye molecules if it stays longer [18]. films were pre-warmed to 80°c during staining to prevent unwanted binding of moisture from air to tio2. figure 4 shows the look of a photoactive electrode after each procedure, chronologically. a) b) c) fig. 4 fto glass with tio2 layer deposition (a), finalized photoactive electrode stained with raspberry (b) and finished solar cell stained with curcuma longa (c). 96 s. ilić, v. paunović 5.3. preparation of electrolyte the electrolyte was prepared by dissolving 1.66 g of lithium iodide (approx. 60 mm lii) and 0.254 g of iodine (approx. 0.5 mm i2) in 20 ml of ethylene glycol at 50°c with stirring. the preparation of iodine-based electrolyte was chosen based on the reported procedures [9, 19]. 5.4. solar cell assembly after photoactive electrode formation, the films were washed carefully with ethanol and distilled water. after drying with warm air, they were coupled with counter electrode and fastened with clips. fig. 5 dye-sensitized solar cell assembly. a platinum transparent electrode was prepared by a doctor-blade deposition of commercially available platinum paste (platisol t/sp, solaronix) on fto glass. furthermore, counter electrode was thermal annealed at 450°c for 30 minutes. figure 5 shows a schematic representation of the cross-section of the solar cell. after coupling the electrodes, the pressure of the clips is slightly reduced and the addition of the electrolyte between the electrodes by needle and syringe is applied, which completes the process of solar cell assembly (fig. 4). 6. measurement of current-voltage characteristics when measuring the current-voltage characteristics of a solar cell, it is necessary to measure the voltage of the cell and the current passing through the cell for different values of resistance in the circuit when it is exposed to solar radiation. since dye-sensitized solar cell gives very weak current (microamperes or less), the current in the circuit was not measured directly by the ampere meter, because it would disturb the measurement. instead, the current was determined indirectly, by measuring resistance and voltage in the circuit. this is done by using light-emitting diode and photo-resistor facing each other in a dark and closed system. therefore, we used so-called voltage-controlled resistance, because different voltages on the light-emitting diode, give different resistances on the photo-resistor. characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells 97 fig. 6 measuring equipment. we used multifunctional system ni usb-6008 [20]. voltage values of the led were applied for 1136 known resistance values on the photo-resistor (range of 367-250000 , and then, after 10 milliseconds the voltage of the solar cell (which was exposed to solar radiation) was measured (fig. 6). based on the known resistance and voltage in the circuit the current is calculated. after that the current-voltage characteristics are drawn. 7. experimental results the analysis of tio2 films by scanning electron microscopy confirms the presence of a developed surface and a porous structure (fig. 7). fig. 7 sem image of the tio2 on fto glass surface on the left and on the right its cross section. results for the current-voltage characteristics measured for dye-sensitized solar cell stained with curcuma longa and raspberry are shown in figure 8. all measurements were recorded at a solar radiation intensity of 790 w/m 2 . 98 s. ilić, v. paunović fig. 8 current-voltage curve of dsscs stained with curcuma longa (black curve) and with raspberry (red curve). dye-sensitized solar cell stained with curcuma longa has efficiency of 0.028% and fill factor of 45%, while dye-sensitized solar cell stained with raspberry has efficiency of 0.017% and fill factor of 36%. by comparing the current-voltage characteristics, we can conclude that the dye-sensitized solar cell stained with curcuma longa is better than dyesensitized solar cell stained with raspberry. graphic results can be explained by the absorption spectra of curcuma longa and raspberry (fig. 9). fig. 9 absorption spectra of curcuma longa (black) and raspberry (red). characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells 99 the curcuma longa is active in the visible region 400-500 nm and has a peak at 429.6 nm, while the raspberry is active in the visible region 480-580 nm and has a peak at 544 nm, which is the characteristic of an anthocyanins [16]. the absorption spectra were recorded using the perkin-elmer lambda 15 uv/vis spectrophotometer. samples did not have the same concentration of the solution, turmeric has a much higher absorption than shown. for our work the most important was to see the absorption peaks and compare them with simulation results. 8. simulation results based on tddft, absorption spectra for cyanidin and curcumin were calculated (fig. 10). curcumin has an absorption peak at 420.8 nm, while the cyanidin has the highest peak at 477.3 nm, which differs from the experimental results. considering that in experiment raspberry dye contains more than one pigment that can absorb light, results obtained from simulation are in good agreement with the experimental values that has been previously explained (fig. 9). curcumin has higher absorption than cyanidin, which can explain the higher efficiency of the solar cell stained with curcuma longa [21]. after optimization for models of the cyanidin and curcumin molecules, the homolumo gap has value: for cyanidin 2.43 ev, which is in perfect agreement with reference work [13], and for curcumin 3.22 ev. fig. 10 absorption spectra of curcumin (black) and cyanidin (red). dye molecule can be anchored on tio2 surface by the carbonyl (=o), hydroxyl (-oh) or carboxyl group (-cooh). curcumin and cyanidin have only carbonyl and hydroxyl groups. a carboxyl group can be represented as a combination of a hydroxyl group and a carbonyl group. adsorption modes can be bridged bidentate and monodentate modes. for simplicity, the adsorption modes are represented with a carboxyl group (fig. 11) [22]. 100 s. ilić, v. paunović fig. 11 anchoring region for bridged bidentate (a) and monodentate (b) adsorption modes. the dotted circle denote the position of deprotonated atom (a). when dye molecule binds to the titanium dioxide surface deprotonation process may occur. deprotonation process happens when hydrogen atom of the dye molecule transfers to the titanium dioxide surface during anchoring. in the case of curcumin and cyanidin the h atom is transferred from the hydroxyl group to the tio2 structure. deprotonation process lowers the energy of the system. in figure 11a, we can see that the dye molecule formed a bridged bidentate adsorption after the deprotonation was performed. note that the hydrogen atom (dotted circle) is bound to oxygen from the cluster of titanium dioxide. however, the dye molecule can be adsorbed, as in figure 11b, without deprotonation. in this case, hydrogen bond may occur. of course, hydrogen atom can be also deprotonated which is lowering the energy of the system [13]. fig. 12 optimized geometries of the cyanidin adsorbed onto the (tio2)16 model (c@tio2) 1 , along with their homo and lumo+7. in our simulation, we observed three systems of molecule/cluster. deprotonation was performed in each of them. dotted circles denote the positions of protons that have been deprotonated from dye molecules to the (tio2)16 cluster (fig. 12, 13, 14). figures also illustrate the homos and lumos of molecule/cluster systems. 1 c@tio2 label means cyanidin anchored onto the tio2. characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells 101 in the case of c@tio2 and k2@tio2 the first level above the lumo that is delocalized on the whole molecule/cluster is lumo+7 (energy -2.859 ev for c@tio2 and -3.039 ev for k2@tio2). for k1@tio2 the first such level is lumo+28, which is at higher energy (-2.597 ev). the absorption of electrons from the valence band to the lumo+7 and lumo+28 levels lead to direct electron injection [23] in the tio2, since the lumo levels are delocalized along the whole system. fig. 13 optimized geometries of the curcumin in monodentate anchoring adsorbed onto the (tio2)16 model (k1@tio2) 2 , along with their homo and lumo+28. fig. 14 optimized geometries of the curcumin in bridged bidentate anchoring adsorbed onto the (tio2)16 model (k2@tio2) 3 , along with their homo and lumo+7. 2 k1@tio2 label means curcumin with one bond anchored onto the tio2. 3 k2@tio2 label means curcumin with two bonds anchored onto the tio2. 102 s. ilić, v. paunović after optimization was carried out for three molecule/cluster systems homo-lumo gaps were calculated: for c@tio2, k1@tio2 and k2@tio2 in the order of 2.37 ev, 1.93 ev and 2.34 ev. we notice that homo-lumo gaps have decreased after binding molecules onto the clusters. also that curcumin has the smallest homo-lumo gap when it is monodentate (k1@tio2) anchored onto the tio2. based on these results, energy diagram of the cyanidin, curcumin, tio2 model and three molecule/cluster systems was made (fig. 15). effective dye-sensitized solar cell requires the homo of the dye molecule to reside in the tio2 band gap and its lumo to lie within the conduction band of the tio2 [13]. we noticed that the homo levels of all three molecule/cluster systems are in the band gap of the tio2, and that lumo levels are below the cbm (conduction band minimum). the energy of the cbm is -3.835 ev. the nearest to the conduction band is lumo level of k2@tio2 (-3.842 ev), then lumo level of k1@tio2 (-3.925 ev) and at the end lumo level of c@tio2 (-4.386 ev). in all systems, all other lumo levels were found in the conduction band of tio2 cluster. fig. 15 schematic energy diagram of the cyanidin, curcumin, tio2 model and three molecule/cluster systems. the results confirm that electron has a higher probability to reach the conduction band in case of systems with the curcumin than in case of system with the cyanidin, which indicates another reason why the solar cell with curcumin has greater efficiency. characteristics of curcumin dye used as a sensitizer in dye-sensitized solar cells 103 9. conclusion the experimental results showed that the dye-sensitized solar cell stained with curcuma longa provides greater efficiency than the dye-sensitized solar cell stained with raspberry. dft calculations showed that a curcumin is closer to the conduction band minimum than a cyanidin, which indicates that electron from curcumin has a higher probability to reach the conduction band. we concluded that curcumin has better properties as a sensitizer than cyanidin for the needs of dye-sensitized solar cells, which is confirmed both by experimental and by simulation results. it is essential to find new dye sensitizers to improve efficiency of the dye-sensitized solar cells, one of the potential new dye sensitizer could be curcumin. acknowledgement: the authors would like to thank to the petnica science center, the institute of physics in belgrade on great assistance and cooperation, also the authors gratefully acknowledge the financial support of serbian ministry of education, science and technological development. references [1] s. ilić, v. paunović, “application of curcumin in dye-sensitized solar cells,” in proceedings of the extended abstracts of the 61st national conference on electrical, electronic and computing engineering (etran 2017), kladovo, serbia, june 5-8, 2017. [2] s. abasian, r. sabbaghi-nadooshan, “introducing a novel high-efficiency arc less heterounction dj solar cell,” facta universitatis, series: electronics and energetics, vol. 31, no. 1, pp. 89-100, 2018. [3] m. jošt, m. topič, “efficiency limits in photovoltaics – case of single junction solar cells,” facta universitatis, series: electronics and energetics, vol. 27, no. 4, pp. 631-638, 2014. [4] r. singh, g. alapatt, g. bedi, “why and how photovoltaics will provide cheapest electricity in the 21st century,” facta universitatis, series: electronics and energetics, vol. 27, no. 2, pp. 257-298, 2014. [5] b. o’regan, m. gratzel, “a low-cost, high-efficiency solar cell based on dye-sensitized colloidal tio2 films,” nature, vol. 353, pp. 737-740, 1991. [6] g. calogero, j. yum, a. sinopoli, g. di marco, m. gratzel, m. k. nazeeruddin, “anthocyanins and betalains as light-harvesting pigments for dye-sensitized solar cells,” solar energy, vol. 86, pp. 15631575, 2012. [7] n. a. ludin, et al. "review on the development of natural dye photosensitizer for dye-sensitized solar cells." renewable and sustainable energy reviews, vol. 31, pp. 386-396, 2014. [8] m. r. narayan, "dye sensitized solar cells based on natural photosensitizers." renewable and sustainable energy reviews, vol. 16, no. 1, pp. 208-215, 2012. [9] k. wongcharee, v. meeyoo, s. chavadej. "dye-sensitized solar cell using natural dyes extracted from rosella and blue pea flowers." solar energy materials and solar cells, vol. 91, no. 7, pp. 566-571, 2007. [10] s. tekerek, a. kudret, and ü. alver. "dye-sensitized solar cells fabricated with black raspberry, black carrot and rosella juice." indian journal of physics, vol. 85, no. 10, pp. 1469-1476, 2011. [11] h. kim, d. kim, s.n. karthick, k.v. hemalatha, c. justin raj, sunseong ok, youngson choe, “curcumin dye extracted from curcuma longa l. used as sensitizers for efficient dye-sensitized solar cells,” int. j. electrochem. sci., vol. 8, pp. 8320-8328, 2013. [12] m. valiev, et al., “nwchem: a comprehensive and scalable open-source solution for large scale molecular simulations,”computer physics communications, vol. 181, pp. 1477-1489, 2010. [13] s. meng, j. ren, e. kaxiras, “natural dyes adsorbed on tio2 nanowire for photovoltaic applications: enhanced light absorption and ultrafast electron injection,” nano letters, vol. 8, no. 10, pp. 32663272, 2008. [14] m. alhamed, a. isaa, w. doubal, “studying of natural dyes properties as photo-sensitizer for dyesensitized solar cells (dssc),” journal of electron devices, vol. 16, pp. 1370-1383, 2012. [15] p. persson, j. c. gebhardt, s. lunell, “the smallest possible nanocrystals of semiionic oxides,” thejournal of physical chemistry b, vol. 107, pp. 3336-3339, 2003. 104 s. ilić, v. paunović [16] i. đorđević, s. ilić, “the application of combined natural pigments in dye-sensitized solar cells,” petnica science center – selected students’ papers, vol. 73, pp. 96-105, 2014 (in serbian). [17] s. ito, p. chen, p. comte, m. k. nazeeruddin, p. liska, p. péchy, m. grätzel, "fabrication of screen‐printing pastes from tio2 powders for dye‐sensitised solar cells." progress in photovoltaics: research and applications, vol. 15, no. 7, pp. 603-612, 2007. [18] from the official website solaronix [on line]. available at: http://www.solaronix.com/documents/ dye_solar_cells_for_real.pdf [19] a. luque, s. hegedus, eds. handbook of photovoltaic science and engineering. john wiley & sons, 2011. [20] multifunctional system ni usb-6008. available at: http://www.ni.com/pdf/manuals/371303n.pdf [21] s. ilić, “dft characterization of curcumin and cyanidin as photosensitizers in dye-sensitized solar cells,” petnica science center – selected students’ papers, vol. 74, pp. 68-74, 2015 (in serbian). [22] e. ronca, m. pastore, l. belpassi, f. tarantelli, f. de angelis, “influence of the dye molecular structure on the tio2 conduction band in dye-sensitized solar cells: disentangling charge transfer and electrostatic effects,” energy & environmental science, vol. 6, pp. 183-193, 2013. [23] d. rocca, r. gebauer, f. de angelis, m. k. nazeeruddin, s. baroni, “time-dependent density functional theory study of squaraine dye-sensitized solar cells,” chemical physics letters, vol. 475, pp. 49-53, 2009. facta universitatis series: electronics and energetics vol. 33, no 1, march 2020, pp. 15-26 https://doi.org/10.2298/fuee2001015o © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd noise shaping in sar adc  dmitry osipov 1 , aleksandr gusev 1 , vitaly shumikhin 2 , steffen paul 1 1 institute of electrodynamics and microelectronics, university of bremen, bremen, germany 2 asic lab, national research nuclear university mephi, moscow, russia abstract. the successive approximation register (sar) analog-to-digital converter (adc) is currently the most popular type of adc architecture, owing to its power efficiency. they are also used in multichannel systems, where power efficiency is of high importance because of the large number of simultaneously working channels. however, the sar adc architecture is not the most area efficient. in sar adcs, the binary weighted capacitive digital-to-analog converter (dac) is used, which means that one additional bit of resolution costs double the increase of area. oversampling and noise shaping are methods that allow an increase in resolution without an increase of area. in this paper we present the new sar adc architectures with a noise shaping. a first-order noise transfer function (ntf) with zero located nearly at one can be achieved. we propose two modifications of the architecture: with zero-only ntf and with the ntf with additional pole. the additional pole theoretically increases the efficiency of noise shaping to further 3 db. the architectures were applied to the design of sar adcs in a 65 nm complementary metal-oxide semiconductor (cmos) with osr equal to 10. a 6-bit capacitive dac was used. the proposed architectures provide nearly 4 additional bits in enob. the equalent input bandwitdth is equal to 200 khz with the sampling rate equal to 4 ms/s. key words: sar adc, noise shaping, fom. 1. introduction sar adcs with a capacitive dac in the feedback loop are currently the most popular type of adcs. the general benefit of this architecture is its power efficiency. some of the recently published sar adcs can achieve an fom of several fj/conv.-step [1]. to provide the required accuracy, a binary weighted capacitive dac is usually employed. the matching of capacitors has a significant influence on the characteristics of sar adcs [2]. to improve the matching, the best option is to use metal-insulator-metal (mim) capacitors, which have relatively high capacitance and area. other types of capacitors, such as metal-oxide-metal (mom), have also been used to design sar adcs, received november 4, 2019 corresponding author: dmitry osipov institute of electrodynamics and microelectronics (item), university of bremen, 28359 bremen, germany (e-mail: osipov@uni-bremen.de) 16 d. osipov, a. gusev, v. shumikhin, st. paul but additional techniques have to be used to provide the required precision because of poor matching (for example, calibration [3], or dithering [4]), even to achieve 10 bit linearity. larger mim capacitors provide good matching, but the final layout of the adc requires a large chip area. furthermore, the larger capacitance leads to higher dac power consumption, for two reasons: first, because of energy drawn from the reference source to switch the capacitors; second, because of the power dissipated in the larger switches. the first problem can be solved by using an advanced switching scheme, such as previously proposed in [5] and [6]. the second problem has no known solution, except for a decrease of dac capacitance. noise shaping and oversampling are the next alternative solutions, which allow a decrease in the number of capacitors in the dac for the same adc resolution. this thematic field is relatively new, with the first important work conducted at the beginning of the 2010s. 2. review of state-of-the-art noise shaping sar adc architectures the basic idea of noise shaping can be described as follows. the digital output d(n) of an adc can be expressed as ( ) ( ) ( ) where x(n) is the analog input value, and q(n) is a quantization error. in conventional adcs, the q(n) value is not used. the basic idea of noise shaping is to append the quantization error of a previous sample to the current sample, for example as ( ) ( ) ( ) ( ) in this case, the transfer function of an adc can be expressed as ( ) ( ) ( ) ( ) it is evident that the quantization error is filtered with the first order high pass filter. the quantization error power is moved to the high frequency part of the spectrum, meaning that the sinad of the adc increases in the low frequency part of the spectrum. the noise shaping only makes sense if used with oversampling. the most obvious way to implement noise shaping is to store the remainder of the last conversion on the dac, while sampling the current sample. a noise-shaping scheme realizing this approach is described in [7]. the simplified circuit is shown in fig. 1(a). in this approach, the active amplifier is used to feed the residue of the previous sample back to the dac. this schematic allows lowering of the dac area, but it utilizes the active amplifier in the feedback loop, which renders it impractical for low power applications. fully passive noise shaping is more promising approach. the most of them use the four input comparator to append the previous sample to the converted input [8]. similar designs were presented in [9, 10], but in these works the ota is used for residue filtering. so, these schemes cannot be called fully passive. these adcs achieve the foms of several and several tens of fj/conv.-step, while providing the effective resolution of 10-12 bits with the effective bandwidth of several ms/s. all these schemes utilize the four input (or fully differential) comparator. the first two differential inputs are connected to the dac, the second two to the output of the filter, which processes the residue (see fig. 1(b)). noise shaping in sar adc 17 fig. 1 typical noise shaping sar architectures: (a) – with active filtering of quantization error; (b) – fully passive in 2019, we also proposed two fully passive noise shaping schemes [11, 12], which are based on the completely different principle. in our schematic we do not use the four input comparator. these schemes will be described in detail in next sections of this paper. the dac capacitors and the residue filter capacitor are connected to each other through the attenuation capacitor (see fig. 2). after the charge redistribution the new voltage at a dac equals to the attenuated sample plus the filtered residue of previous sample. so, the usual two-input comparator can be used. furthermore, our schematic allows to implement the most efficient noise shaping, as its noise transfer function (ntf) zero lies very near to one, to be exactly 0.943. by the competitors the zero location is between 0.5 and 0.75 (see fig. 3). so, it did not make sense to sample with osrs higher than 8, as no gain in enob could be achieved. both our noise shaping schemes allow the use of higher osrs – up to 15. this schematic allows designing the competitive sar adcs. fig. 2 proposed fully passive noise-shaping sar adc architecture 18 d. osipov, a. gusev, v. shumikhin, st. paul fig. 3 comparison of state-of-the-art fully passive noise-shaping sar adcs. the both proposed schemes allow the use of osr higher than 10 3. proposed noise shaping sar architecture the proposed noise shaping architecture is shown in fig. 2. dependent on the connection of the attenuation capacitor after the conversion phase this architecture can be split into two sub-architectures: one implements the zero-only ntf, the other has the ntf with additional pole. the pole has the influence on the systems stability, but also increases the attenuation of the noise in the frequency band of interest. the circuit utilizes additional capacitors equal to bc0 and cc0, where b and c are integers, and 8 switches, which can be implemented as single n-channel mos (nmos) transistors. additionally, the most-significant-bit (msb) capacitor should be equal to 2 n-1 , where n is the dac's resolution. so, the dac is twice as big in comparison to the standard monotonic switching sar architecture [14]. the additional capacitor cc0 is needed to obtain the value of quantization error e(n) at the end of conversion, as in the noise-shaping architecture presented in [15]. 3.1. architecture without the pole in ntf first, we consider the architecture without the pole in ntf. in this case, the digital control logic does not differ much from the standard sar logic. the additional switches are operated with the sampling signal and inverted sampling ̅̅ ̅. during sampling the capacitors bc0 are discharged to ground, the comparator and cc0 are disconnected from the capacitive dac. the cc0 capacitor holds the remainder voltage of previous conversion. during conversion phase the dac is connected to the comparator and cc0 through the discharged attenuation capacitor bc0. the working principle is shown in fig. 4. only one side of the dac is shown for simplicity. the following equations can be written for the charge redistribution after the end of sampling phase (b in fig. 4): noise shaping in sar adc 19 { ( ( ) ( )) ( ( ) ( )) ( ( ) ( ) ⁄ ( ⁄ ⁄ ⁄ ) ) (1) where x(n) is the sampled analog input, e(n1) is the quantization error of previously converted digital output d(n), g(n) is an actually converted analog value, which appears on the comparator input after the initial charge redistribution after the sampling phase and before the start of conversion, k(n) is the voltage on the capacitive dac obtained at the same moment. from this set of equations the voltage g(n) can be found as: ( ) ⁄ ( ) ( ⁄ ⁄ ) ( ) ( ⁄ ⁄ ⁄ ) (2) after initial charge redistribution the conventional monotonic sar algorithm can start. at the end of conversion, the voltage at comparator will equal to: ( ) ( ) ( ⁄ ⁄ ⁄ ) , (3) fig. 4 working principle of the proposed noise shaping architecture. a: sampling phase; b: charge redistribution after sampling phase; c: sar matrix and voltages at the end of conversion cycle.  = 1 / (1/2 n + 1/b + 1/c) 20 d. osipov, a. gusev, v. shumikhin, st. paul where d(n) is the digital output code of the sar. this voltage, obviously, equals to the quantization error e(n) divided by the coefficient equal to c (1/2 n + 1/b +1/c). taking this into account, the following equation can be written for the digital output d(z) in the complex frequency domain: ( ) ( ) ( ⁄ ⁄ ⁄ ⁄ ⁄ ) ( ) (4) the following observations can be made. first, with the increase of c, the coefficient at z 1 approaches ''1''. secondly, from the equation (2) with the increase of c, the voltage at the comparator input at the beginning of conversion cycle becomes independent on the x(n), and so, the circuit becomes nonfunctional. in the practice it means, that to provide better ntf we have to increase the resolution of the comparator. for example, in this work, the following configuration was applied: c = 2 n1 , b = 1. that configuration provides the ntf equal to (10.9429z -1 ), while the x(n) is divided by 17.5. so, in the proposed design, the comparator resolution should be equivalent to 10.13 bit. however, the design of comparator can be relaxed in comparison to the comparator in the classical 10-bit monotonic scheme, as the common mode variation in the proposed scheme is also no more than vref / 17.5. 3.2. architecture with the pole in ntf the additional pole in the ntf provides additional attenuation of the noise in the band of interest. but, for the realization of this architecture additional control signals are needed. furthermore, the charge on the attenuation capacitor should be divided by two to provide the circuits stability. the modified schematic is shown in fig. 5. fig. 5 architecture modification to implement additional pole in ntf noise shaping in sar adc 21 the simplified functional diagram of the proposed sar adc architecture is shown in fig. 6. initially, the input signal x(n) is sampled on the top plates of the capacitive dac. at the same time, the residue voltage of previous sample (voltage on the capacitive dac after the end of conversion) saved on the capacitor bc0 is divided by two. without this step the pole will be equal to one and the circuit will become unstable. the capacitor сс0, with the previous quantization error divided by  = (1/2 n + 1/b + 1/c), is disconnected from the dac. after the end of sampling phase, the dac is connected to the quantization error storage capacitor cc0 through the capacitor bc0 like in previous circuit. the charge redistribution occurs, which can be described as: { ( ( ) ( )) ( ( ) ( ) ( )) ( ( ) ( ) ⁄ ) , (5) where k(n) and g(n) are the voltages on the dac and quantization error storage capacitor cc0, respectively, after charge redistribution, e(n1) is the quantization error of previous sample. after the charge redistribution the conversion begins. as the capacitor cc0 is connected directly to comparator, after the end of conversion, its voltage will be equal to e(n) / α. the voltage at the dac will be equal to: ( ) ( ) (6) where d(n) represents the digital dac input (adcs output). fig. 6 functional diagram of the proposed adc architecture 22 d. osipov, a. gusev, v. shumikhin, st. paul after the end of conversion the new value of vres(n) can be saved on capacitor bc0 (if bc0<<2 n c0). from (5)-(6) the following equation can be written for the determination of output digital code d(z): ( ) ( ( ⁄ ) ) ( )( ) ( ) ( ⁄ ⁄ ⁄ ) (7) if ⁄ <<1, this equation can be simplified to: ( ) ( ) ⁄ ⁄ ( ) (8) if c, n>>1, the equation (8) can be rewritten as: ( ) ( ) ( ) (9) so, the circuit will perform the first order noise shaping. the pole gives additional 3 db noise shaping in the input frequency band. to implement this architecture the modification of the sar logic is needed, which is shown in fig. 7. it can be seen that only 6 additional combinational logic blocks and one delay are used to generate the signals for noise shaping. our innovative delay design [16] is used to provide low power consumption. fig. 7 control logic modification for the realization the proposed noise-shaping sar adc architecture (with additional pole) 4. simulation results and comparison of proposed noise shaping sar architectures for both architectures we used 65 nm technology of umc. a binary weighted capacitive dac is built with minimum metal-insulator-metal (mim) capacitors (5µm x 5µm, 51 ff). two capacitors are connected in series to implement c0, so the c0 value is equal to 25.5 ff. a 16c0 (c=16) mim capacitor is used to store the quantization noise shaping in sar adc 23 error. the attenuation capacitor is set to 2c0 (b=2). so, the input voltage x(n) is devided by 17.5 at the input of the comparator. so, in this configuration the comparator resolution should be equivalent to 10.13 bit. the common mode voltage on the input of the comparator sequentially decreases from vref/2/17.5 to zero, so one p-type input differential pair can be used in comparator circuit. a common dynamic one stage topology shown in fig. 8 was used. all switches are realized as single n-mos transistors with minimum length and width except for the input sampling switch, where a bootstrapped switch is used to suppress harmonics, what is quite common in sar adcs with upper plate sampling. fig. 8 simple one stage comparator used in this design the second architecture does not affect the area of the significantly. the area estimation of both architectures (automatic place and route) equals to 0.05 mm 2 . the circuits were simulated with cadence spectre. the sampling speed was set to 4 ms/s. the simulated output spectrums of the proposed adcs with 191.47 khz @0.9151 db sinusoidal input are shown in fig. 9. fig. 9 simulated output spectrum of the proposed architectures 24 d. osipov, a. gusev, v. shumikhin, st. paul a comparison with other architectures and both proposed architectures is given in table 1. table 1 state of the art noise shaping sar adcs [8] [10] [9] zero-only zero+pole architecture ntf zero location 0.75 0.5 0.65 →1 need of ota no yes yes no need of comparator modification yes yes yes yes input attenuation no yes no yes number of unit capacitors 2n 2n+1 2n 3(2n-1) circuit performance technology, nm 130 65 65 65 bandwith, mhz 0.125 6.25 11 0.2 dac size, bit 10 8 8 6 enob, bit 12 10 9.35 10.0 10.12 additional bits in enob, bit 2 2 1.35 4.0 4.12 osr 8 4 4 10 fom, fj/conv.-step 59.6 14.8 35.8 19.4 18.0 foms, db 167 165.2 163.3 167.2 167.9 verification meas. meas. meas. simulation year 2019 it can be noted that the architecture variant with pole gives only slight improvement in the sinad 0.8 db, which corresponds only to 0.12 bits in enob. the power consumption of the second architecture is slightly higher (because of additional logic and switches): for the zero only architecture the average power consumption equals to 7.94 µw, while for the architecture with additional pole it is 8.0 µw. for both implementations dac consumes nearly 50% of power, comparators power consumption is nearly 40%, while the rest is consumed by digital logic. the theoretical 3 db improvement of sinad in the frequency band of interest was not achieved. the nonideality of the division by two with the real switch and capacitor can be the cause of it. so, by now we recommend to use the more simple variant without the pole. both proposed schemes do not need any modification of comparator circuit, the additional capacitor needed for storage of the quantanization error is compensated by the use of monotonic switching. so, the total area of the proposed architectures is near the same as in other noise shaping schemes. the main advantage of the proposed architectures is the possibility to use higher osrs. it gives the possibility to achieve higher number of effective bits with less area. the previously reported noise-shaping sar adcs typically achieve only 2 additional bits, while proposed sar adc achieves the 10-bit resolution with the 6-bit capacitive dac. noise shaping in sar adc 25 4. conclusion two new, fully passive noise shaping architectures for a sar adc were proposed. in both architectures the theoretically achievable ntf zero location tends to one. in the proposed implementation of the architectures the real zero location is 0.943, while in the alternative solutions the maximum ntf zero was 0.75. the architectures introduce only a slight modification of the standard sar adc scheme. a four-input comparator is not needed. the digital logic remains unmodified for the first architecture (zero only) and slightly modified for the second architecture (6 additional logic gates). the second architecture theoretically can give additional 3 db attenuation of quantanization noise in the frequency band of interest. however, in practical implementation the additional attenuation was equal to 0.8 db, which makes the first architecture more suitable, because of its simplicity. both architectures were used to implement the sar adc in 65 nm cmos technology of umc. the 6-bit capacitve dac and osr ration equal to 10 were used. the input frequency bandwidth was set to 200 khz. both architectures provide 4 additional bits in enob. according to simulation results both adcs have walden fom of less than 20 fj/conv.-step and schreier fom of more than 167 db. further research can concentrate first, on the more accurate investigation of the lower attenuation of quantization noise in the second architecture with additional pole in ntf, and second, on the implementation of second order ntfs by, for example, a combination of the proposed architecture with the architecture with 4-input comparator. acknowledgement: this work was supported by german research foundation (dfg), project number: 389481053, and by grant no. 18-79-10259 by the russian science foundation. references [1] m. liu, p. harpe, r. van dommele and a. van roermund, "15.4 a 0.8v 10b 80ks/s sar adc with dutycycled reference generation," in digest of technical papers of the ieee international solid-state circuits conference (isscc), san francisco, ca, 2015, pp. 1-3. [2] d. osipov and y. bocharov, "behavioral model of split capacitor array dac for use in sar adc design," in proceedings of the 8th conference on ph.d. research in microelectronics & electronics, prime 2012, aachen, germany, 2012, pp. 1-4. [3] j. shen, a. shikata, a. liu, b. chen and f. chalifoux, "a 12-bit 31.1µw 1-ms/s sar adc with on-chip input-signal-independent calibration achieving 100.4-db sfdr using 256-ff sampling capacitance," ieee journal of solid-state circuits, vol. 54, no. 4, pp. 937-947, april 2019. [4] j. guerber, h. venkatram, m. gande, a. waters and u. moon, "a 10-b ternary sar adc with quantization time information utilization," ieee journal of solid-state circuits, vol. 47, no. 11, pp. 26042613, november 2012. [5] d. osipov and st. paul, "two advanced energy-back sar adc architectures with 99.21 and 99.37% reduction in switching energy", analog integrated circuits and signal processing, vol. 87, no. 1, pp. 81-91, 2016. [6] d. osipov and s. paul, "two-step monotonic switching scheme for low-power sar adcs," in proceedings of the 15th ieee international new circuits and systems conference (newcas), strasbourg, 2017, pp. 205-208. [7] m. shahghasemi, r. inanlou, m. yavari, "an error-feedback noise-shaping sar adc in 90 nm cmos", analog integr circ sig process, vol 81, pp. 805-814, 2014. [8] w. guo and n. sun, "a 12b-enob 61μw noise-shaping sar adc with a passive integrator", in proceedings of the esscirc conference, 2016, vol. 42, pp. 405-408. https://doi.org/10.1007/s10470-014-0434-6 26 d. osipov, a. gusev, v. shumikhin, st. paul [9] a. fredenburg and m. p. flynn, "a 90-ms/s 11-mhz-bandwidth 62-db sndr noise-shaping sar adc, " ieee journal of solid-state circuits, vol. 47, no. 12, pp. 2898-2904, december 2012. [10] z. chen, m. miyahara, and a. matsuzawa, "a 9.35-enob, 14.8 fj/conv.step fully-passive noise-shaping sar adc, " ieice transactions on electronics, vol. 99, no. 8, pp. 963-973, 2016. [11] d. osipov, a. gusev, s. paul, "first order fully passive noise-shaping sar adc architecture with ntf zero close to one," in proceedings of the 17th ieee international new circuits and systems conference (newcas), munich, 2019. (not published yet) [12] d. osipov, a. gusev, v. shumikhin, s. paul, "sar adc architecture with fully passive noise shaping", in proceedings of the ieee 31th international conference on microelectronics (miel), nis, 2019, 219-222. [13] z. chen, m. miyahara and a. matsuzawa, "a 9.35-enob, 14.8 fj/conv.-step fully-passive noise-shaping sar adc," in proceedings of the 2015 symposium on vlsi circuits (vlsi circuits), kyoto, 2015, pp. c64-c65. [14] liu, s. chang, g. huang and y. lin, "a 10-bit 50-ms/s sar adc with a monotonic capacitor switching procedure," ieee journal of solid-state circuits, vol. 45, no. 4, pp. 731-740, april 2010. [15] r. inanlou and m. yavari, "a simple structure for noise-shaping sar adc in 90 nm cmos technology, " aeuinternational journal of electronics and communications, vol. 69, no. 8, pp. 1085-1093, 2015. [16] d. osipov, h. lange, st. paul, "energy-efficient cmos delay line with self-supply modulation for lowpower sar adcs", international journal of electronics, published online: 06 september 2019. instruction facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 1 15 doi: 10.2298/fuee1501001b igbts working in the ndr region of their i-v characteristics  riteshkumar bhojani 1 , thomas basler 1 , josef lutz 1 , roland jakob 2 1 department of power electronics and electromagnetic compatibility, technische universität chemnitz, germany 2 ge energy power conversion berlin, germany abstract. this paper demonstrates the detailed work on high voltage igbts using simulations and experiments. the current-voltage characteristics were measured up to the break through point in forward bias operating region at two different temperatures for a 50 a/4.5 kv rated igbt chip. the experimentally measured data were in good agreement with the simulation results. it was also shown that the igbts are able to clamp high collector-emitter voltages although a low gate turn-off resistor in combination with a high parasitic inductance was applied. uniform 4-cell and 8-cell igbt models were created into the tcad device simulator to conduct an investigation. an engendered filamentation behaviour during short-circuit turn-off was briefly reviewed using isothermal as well as thermal simulations and semiconductor approaches for development of filaments. the current filament inside the active cells of the igbt is considered as one of the possible destruction mechanism for the device failure. key words: igbt, i-v characteristic, voltage clamping, short-circuit, filamentation 1. introduction igbts are one of the most important power semiconductor devices in low, medium and high power applications ranging from few hundred volts to several thousand volts. this device offers excellent switching behaviour, easy gate drivability, wide safe operating area, snubber-less operation and robust turn-off capability. in addition, the capability to limit the short-circuit current is one of the superior properties of igbts [3, 4]. the basic physics of the igbts is explained well in given literatures [1-4]. in the present work, the investigated igbt chips are taken from a high voltage igbt press-pack device which consists of 42 single igbt chips. each chip is rated at 50 a for 50 hz half-sine waveform at 75 °c and has a blocking capability of 4.5 kv. the purpose of this paper is to give a comprehensible explanation of the device behaviour from static up to dynamic characteristics. simulations are performed here to investigate internal received october 15, 2014 corresponding author: riteshkumar bhojani department of power electronics and electromagnetic compatibility, technische universität chemnitz reichenhainer str. 70, room h109, d-09126 chemnitz, germany (e-mail: riteshkumar.bhojani@etit.tu-chemnitz.de) 2 r. bhojani, t. basler, j. lutz, r. jakob effects of the igbts. the igbts presented here have a planer cell structure and a fieldstop layer at the collector side. 2. igbt complete i-v characteristics up to breakdown point to understand the device behaviour, the static characteristics of the igbt at different gate voltages has to be well understood. the technique to measure igbt static characteristics non-destructively was explained in [5]. complete static characteristics were measured using two different measurement setups. the first setup uses the “tektronix 371b curve tracer” up to the maximum power of 3 kw. the measurement points in desaturation and breakthrough area at the breakthrough branch were taken using a single pulse short-circuit (sc) type 1 measurement setup given in fig. 1(a) [5]. fig. 1 (a) sc 1 test circuit (b) sc example pulse for static characteristic measurement vge = 15 v, vdc = 3.5 kv, lpar = 3.9 μh, rg,on = 44 ω, rg,off = 220 ω, t = 400 k igbts working in the ndr region of their i-v characteristics 3 a protection igbt (sigbt) was used to turn-off the short-circuit in a case of dut (device under test) failure. several measurement points of the desaturation area have been taken during the static short-circuit phase. high parasitic inductances (lpar) up to 14 μh in combination with low rg,off have been used to produce high overvoltages during sc turnoff. thereby, the breakdown point of the output characteristic can be attained for a short time interval. the course of vce, ic, vge and ig moments read-out times of the different measurement points and energy loss during the short-circuit measurement pulse are displayed in fig. 1(b). the applied collector-emitter voltage during this measurement was 3.5 kv at a temperature of 400 k. the gate to emitter voltage (vge) and collector-emitter voltage (vce) were measured very close to the chip to avoid parasitic influences. charging process of the igbt capacitances and self heating during the short-circuit pulse has to be considered to get exact points of the i-v characteristics. since the width of the short-circuit pulse is reduced to small values, the losses generated up to the measurement point are low. a very small increment in the chip temperature can be calculated due to the large base width of the high voltage igbt. temperature change ∆tsc during the shortcircuit turn-off was calculated using equation (1) by assuming a homogeneous temperature distribution throughout the chip [5]. sc sc sc th th,si w w t c c d a       (1) sc 1 1 3 3 0.7 j 3 k 788 j kg k 0.00234 kg cm 0.128 cm t         in equation (1), wsc is the energy loss during single pulse short-circuit, cth is the thermal capacitance, cth,si is the lattice heat capacity of silicon, ρ is the density of silicon, d is the igbt thickness and a is the igbt area. the calculated temperature rise for sc was added to the measurement temperature of static curve tracer measurements [5]. the measured and simulated i-v characteristics of the igbts are shown in fig. 2(a) and fig. 2(b) at two different temperatures 300 k and 400 k respectively. the graphs exhibit good agreement between measured and simulated results. at higher currents, the bipolar current gain increases due to increase in injection efficiency and base transport factor. this is the reason for an increment in igbt saturation current at higher collectoremitter voltages. the current equation of the igbt and its relation to bipolar current gain are mentioned below [1-4]. 2 c,sat ge th pnp 1 ( ) (1 ) 2 k i v v       (2) n oxw c k l    (3) pnp e t    (4) 4 r. bhojani, t. basler, j. lutz, r. jakob p e p n j j j    (5) t eff p,nb 1 cosh w l          (6) fig. 2 measured (left-side) and simulated (right-side) igbt static characteristics (a) t = 300 k (b) t = 400 k in above equation (2), k is the channel conductivity and αpnp is the bipolar current gain given by equations (3) and (4). vge is the gate emitter voltage, vth is the threshold voltage, μn is the electron mobility, cox is the oxide capacitance, γe is the injection efficiency, αt is the base transport factor, jp is the hole current density, jn is the electron igbts working in the ndr region of their i-v characteristics 5 current density, weff is the non-depleted width of the n base and lp,nb is the diffusion length for holes in collector side buffer region. the higher the applied battery voltage the more holes are injected from the collector side. if vce increases, the space charge region expands. consequently the effective base width will be reduced. the effective base width is the non-depleted width of the base region under applied collector-emitter voltage. therefore, the injection efficiency and the base transport factor increases with higher vce which results in increased bipolar current gain. hence, the igbt collector current grows with the increment in applied collectoremitter voltage. moreover, the reduced collector current at higher temperatures for gate voltages, significantly higher than threshold voltage, were resulted from the strong mobility dependency on temperature. for gate voltages slightly higher than the threshold voltage, the saturation current can also increase with temperature due to the strong reduction of the vth. these operation points are below the so called “temperature compensation point” (tcp) [18]. when gate voltage is lower than the threshold voltage of the igbt, the mos channel cannot supply electrons to conduct current. as the gate voltage comes close to the threshold voltage, a very small amount of current flows due to the starting of accumulation of electrons below the gate oxide. the saturation current strongly depends on the thickness of the gate oxide layer below the gate contact. a small reduction in gate oxide thickness influences the channel conductivity k which is given by equation (3). thus, the gate oxide considered as one of the crucial parameter for designing igbt simulation model. on the breakdown characteristic, the measurement results describe that for vge > vth, the igbt is able to block about 4.2 kv at 300 k. this breakdown voltage is significantly lower than the breakdown voltage at vge = 0 which is 5.5 kv shown in fig. 2(a). at 400 k, the measured breakdown voltage is slightly lower than the simulated breakdown voltage. in practice, during the short-circuit turn-off event it is more practical that the operating point comes on the ndr (negative differential resistance) branch of the igbt static characteristics for low rg,off. this could lead the igbt to destructive mechanisms. one of the possible destruction mechanisms was filamentation due to the rapid turn-off of the igbts during short-circuit type 1. later on, the filamentation phenomenon is explained using simulation results. 3. self-clamping at short-circuit turn-off of high voltage igbts igbts have the potential to block high overvoltages during fast switching or shortcircuit. in this part of work, investigations were done on the single igbt. the measured igbts were able to clamp the overvoltages induced during short-circuit turn-off event. the high vce can occur during fast short-circuit turn-off and self turn-off [7] and this can be clamped by igbts itself. a similar clamping mechanism has already been described for the igbt overcurrent turn-off in [9] and switching self clamping mode (sscm) [7-9]. however, for low gate turn-off resistor, the igbt turn-off may become critical and unstable which leads to the device destruction. here, the gate turn-off resistor (rg,off) controls the speed and the overvoltage during turn-off process. 6 r. bhojani, t. basler, j. lutz, r. jakob fig. 3 igbt destruction during short-circuit turn-off (initial failure: freewheeling diode failed during double pulse test with high turn-on inductance, sc type 2 for igbt) vdc = 3 kv, lpar = 7.75 μh, rg,off = 300 ω, t = 400 k fig. 3 demonstrate waveforms of the short-circuit type 2 turn-off, where at point 1 the freewheeling diode fails first during its reverse recovery and the igbt runs under shortcircuit. in the measurement, the igbt current exceeds the measurement range of the used rogowski coil. at point 3, the igbt is automatically turned-off by the gate drive unit. therefore, a large overvoltage is induced which comes on the post avalanche branch of the static characteristic and the igbt was destructed, see point 4. the values used for the parasitic inductance, gate turn-off resistor and temperature are displayed in fig. 3. the destruction point on the chip is clearly visible from the emitter and from collector side as well [14]. a crack engendered during the destruction which propagates towards the junction termination. the detailed explanation about different short-circuit types are given in [10-12]. fig. 4 (a) and (b) shows the measured and simulated clamping mechanisms by igbts during single pulse short-circuit turn-off. to compare measurement with simulation, different values for the gate turn-off resistor were taken. high overvoltage induced due to the high parasitic inductance during the falling dic/dt. for small rg,off, dic/dt is limited by avalanche generation to clamp dcc par d d v vi t l   (7) which is defined for sscm mode and holds for measurements as well as simulations [9]. in difference to overcurrent turn-off, the density of the charge carrier is quite low for the short-circuit case due to high applied electric field. igbts working in the ndr region of their i-v characteristics 7 fig. 4 (a) measured sc 1 behaviour vdc = 3 kv, lpar = 7.3 μh, t = 300 k (b) simulated sc 1 behaviour vdc = 3 kv, lpar = 10 μh, t = 300 k measurements and simulations were done using different gate turn-off resistors. the clamping mechanism is shown with the help of simulations using a half-cell igbt model in fig. 4(b). half-cell, 4-cell and 8-cell igbt models are proposed in this work to inspect the physical behaviour. they were fitted to match the behaviour of the real igbt. the measurements clearly show a course through the ndr region of the static curve for the phase of rapidly increasing vce during fast turn-off. at this point, the igbt turn-off behaviour completely relies on the course of the applied gate voltage which will be explained in the next section. 8 r. bhojani, t. basler, j. lutz, r. jakob the ndr branch of the igbts is related to the bipolar current gain explained in previous section. it has a vast influence on the i-v characteristics. by increasing the buffer deepness of the igbt, it is possible to adjust the bipolar current gain and emitter efficiency that will result in high blocking capability. that means the ndr branch shifts towards higher voltages for e.g. deeper field-stop regions. there are other possible ways to adjust bipolar current gain. more detailed explanation has been given in the following literature [13, 14]. from this clamping behaviour, it is difficult to conclude the physical reasons behind the destruction of the igbts. therefore, investigations were completed using 4-cell and 8-cell igbt isothermal and thermal simulations to investigate the cause for the igbt destruction. 4. filamentation in igbts during short-circuit turn-off simulation allows complex analysis of the internal behaviour and gives several physical parameters like electric field expansion, electron and hole density, temperature distribution, current density and much more. precise knowledge of those various physical quantities can explain the possible reasons for device destruction. in this section, an isothermal simulation of the 4-cell and 8-cell igbt model shall be demonstrated. furthermore, it is not possible to ascertain filamentation behaviour using half-cell igbt model. therefore, the igbt model should have more than one full cell structure to realize current filaments. the simulation time has to be considered as well for simulation of structures with large number of igbt cells. filaments were found before in igbts under various conditions and at different places inside the igbts in given published works [15-17]. the single pulse short-circuit type 1 turn-off was used with adjusted pulse length of 20 µs. at 20 µs, the igbt was turned-off with high current velocity dic/dt. a very high slope of the falling current is more feasible to induce voltage and current stress on the igbts during turn-off. the value of the parasitic inductance, the applied battery voltage and gate turn-off resistor were adjusted to achieve fast switching. under given circumstances, the igbts have to work on the breakdown branch. during current falling time, the collector-emitter voltage of the igbt rises rapidly. fig. 5(a) and (b) shows the simulated short-circuit type 1 switching waveform. the course of collector current, collector-emitter voltage and gate voltage are plotted as a function of time. as far as the gate voltage is higher than the threshold voltage, the igbt can conduct large saturation currents simultaneously with large applied battery voltage across it during short-circuit. these points can be the stable operating points on the linear region of the igbt static characteristics. on the other side, a point comes when the gate voltage becomes lower than the threshold voltage. when that happens, the mos channel below the gate oxide closes and the igbt stops conducting through this channel. there comes the influence of the ndr (negative differential resistance) branch on device behaviour. from now on, the igbt is “self-controlled” and the influence of the ndr branch on device behaviour shows a higher impact on the switching behaviour for fast and high-inductive turn-off. igbts working in the ndr region of their i-v characteristics 9 fig. 5 simulation of sc turn-off (a) 4-cell model black lines and 8-cell model red dashed lines (b) magnified picture vdc = 3.5 kv, lpar = 10 μh, rg,off = 30 ω, t = 300 k the igbt operating point is already on the ndr branch of the igbt due to large voltage overshoot. this ndr phenomenon may be destructive. the working point of the igbts comes on this branch only if the gate voltage becomes less than the threshold voltage of the given igbt, compare with the above shown static i-v characteristics. in this case it is hard for the igbts to survive. one of the possible failure pictures was 10 r. bhojani, t. basler, j. lutz, r. jakob given in fig. 3. the demeanours of the current filaments during short-circuit turn-off for the 4-cell and 8-cell are exemplified in fig. 6(a) and (b) respectively. at the beginning of the short-circuit turn-off event, the gate signal has been set to zero to turn-off the igbt. the igbt current starts to fall while the gate voltage approaches to 0 v. starting with 4-cell model at time point 19.5 µs, the igbt is still flowing current through its fully opened n-channel. the base of the igbt is flooded with charge carriers. the electrons are flowing from emitter to collector and holes opposite to that. the range of the electron and hole density during igbt conducting state is significantly lower than 1 × 10 15 cm -3 . the current density in each cell at the p-well has a value of about 1 ka/cm 2 which is quite high. since the gate voltage is 12.6 v, the igbt channel is still conducting. the generated overvoltage at this point is about 870 v. the voltage overshoot is superimposed to the battery voltage of 3.5 kv and is blocked by the reversed biased junction at the emitter side. this overvoltage resulted due to high parasitic inductance, understandable from equation (7). that means the igbt is working in a breakdown branch of the static characteristics. nevertheless, there is no destruction phenomenon initiated at this point. this belongs to the stable operating phase during short-circuit turn-off. just after 100 ns when the gate voltage reduces from 12.6 v to 10.6 v, the operating point shifts on static characteristics from 12.6 v gate voltage branch to 10.6 v branch. this is a starting of the ndr branch of igbt output characteristics. since only a small amount of current flowing through the channel, the remaining current forced to flow directly through p-well. the peak of the electric field at time point 19.6 µs along the reverse biased junction is observed to exceed 250 kv/cm. this high electric field generates large number of electron-hole pairs by avalanche generation at this junction. the remaining charge carriers inside the igbt base region will conduct the current additionally by means of avalanche generated electron-hole pairs. to get physical understanding for the igbt destruction, this time point is very important. only if all igbt cells carry the same current, this could be a stable operating point otherwise it is the initial point for current filamentation. at 19.7 µs, the channel is partially closed due to further reduction in gate voltage. here, a small current is still flowing through the channel which is clearly visible from fig. 6 at 2 nd and 4 th cell of the 4-cell igbt model. at this time point, the values of gate voltage, collector current and collector-emitter voltage are 10.1 v, 277 a and 4335 v respectively. a small kink has been seen in a magnified voltage waveform of a 4-cell igbt inside the blue circle of fig. 5(b). as can be seen from fig. 6, the current filament is already initiated at first and third cell from left hand side of the igbt structure. the current density along the third cell at this time point becomes double due to avalanche generated electron-hole pairs. subsequently, the current filament starts to dominate on a single cell. this means the whole current starts to flow through a single cell due to reduced resistance and thus current crowding. eventually, at 20 µs only single filament can be seen in one of the active cell in simulation results of the 4-cell igbt model. igbts working in the ndr region of their i-v characteristics 11 fig. 6 filamentation in the igbt during isothermal simulations (a) 4-cell model and (b) 8-cell model picture vdc = 3.5 kv, lpar = 10 μh, rg,off = 30 ω, t = 300 k 12 r. bhojani, t. basler, j. lutz, r. jakob the investigation was also done for an 8-cell igbt model. similar behaviour was observed for an 8-cell igbt model simulated again at room temperature. out of eight cells, the current filament found initially into the four random active cells of the igbt at 19.90 µs. the intensity of these current filaments is different at each cell. later, the igbt current wants to flow through one single cell. like in the 4-cell igbt model, the current filament has converged along sixth cell at time 22.1 µs in an 8-cell model. in practice, a very high localized current density increases the temperature inside the igbt which cannot be seen through the isothermal simulation. hence, the temperature inclusion into the device simulation should be considered. to examine the temperature influence on filamentation, thermodynamic simulation was performed utilizing a 4-cell igbt model. similar current filament effect was found out through the igbt simulation. in device simulation, a starting temperature and the pulse width were adjusted to 300 k and 10 µs respectively. this thermodynamic simulation can give more realistic behaviour like in a real application of the igbt. fig. 7(a) and (b) show the thermodynamic switching behaviour and the respective demeanour of the current filament. to correlate switching behaviour with the internal igbt behaviour during turnoff, eight different time points are taken to allege the physical reasons for the igbt failure. as previously explained, the gate voltage plays a major role during the shortcircuit turn-off. the demeanor of the current filament is shown in fig. 7(b) by taking eight different points of the switching waveform. at 10.5 µs, the collector-emitter voltage is about 5 kv and the gate voltage is 13.6 v. this large overvoltage is induced due to the falling dic/dt. the igbt is working in the avalanche branch due to the high overvoltage. first three time points belongs to the stable operating points on the igbt static characteristic. in the next time step at 10.75 µs when the gate voltage becomes 9.6 v, the avalanche branch becomes ndr-like and filamentation event occurs. likewise the previous results of the isothermal simulations, the current filament start to converge into the single active cell. eventually, the collector current reaches to zero. the movement of the current filament from time step 11.50 µs to 11.75 µs was ascertained. the filamentation jumping from one cell to other can be related to the temperature compensation point (tcp) of the igbt transfer characteristics and at the position of the filaments high temperatures are reached. therefore, the ionization rates are lowered and the avalanche generation decreases. now the current wants to flow at a cooler region. thus, the current instability has been analyzed on the igbt transfer characteristics below tcp point [18]. the maximum temperature observed during the short-circuit turn-off was about 480 k at 11.50 µs. maximum electric field simulated at this point has reached more than 270 kv/cm. high localized current density and high temperature across a single igbt cell should be the reason for the found device destruction. during the simulations, an anomalous behaviour of the forming filamentation was investigated under different starting parametric conditions like dc-link voltage, parasitic inductance and temperature. to improve the short-circuit turn-off ruggedness, the gate turn-off resistor for this case must be chosen well. a trade-off between short-circuit turn-off losses and a stable filament behaviour must be found. in practice, a high resistance is often used for the short-circuit turn-off (e.g. soft-turn-off resistor). a reduced parasitic inductance can additionally lead to a lower generated overvoltage. furthermore, an active clamping can be used to recharge the gate and thus to overcome the ndr region. adjustment of bipolar current gain can be one of the possibilities to suppress the ndr influence directly in the semiconductor [6]. igbts working in the ndr region of their i-v characteristics 13 fig. 7 thermal simulation of 4-cell igbt model (a) switching characteristics vdc = 3.5 kv, lpar = 10 μh, rg,off = 30 ω, starting temperature t = 300 k and (b) filamentation behaviour 5. summary the investigation concludes that it was possible to measure the i-v characteristics of the igbt up to the breakdown branch non-destructively. important facts regarding igbt failure can be interpreted with the help of this measured output characteristics. the results manifest that the igbt is able to work on avalanche branch. the failure analysis can be clearly related to the ndr branch of the i-v characteristics. a stable operating point can be feasible in the avalanche branch of the igbt during fast turn-off. the destructive event occurs if the igbt operating points are situated in the 14 r. bhojani, t. basler, j. lutz, r. jakob ndr branch during short-circuit turn-off event. igbts are able to clamp large overvoltage generated due to high steepness of falling dic/dt. this clamping mechanism turned out unstable and led igbt towards destruction. the internal behaviour of the igbt was analyzed with the help of single pulse short-circuit type 1 simulation. the found igbt failure is connected to the inhomogeneous current conduction through the igbt structure. the complete current was converged at a single cell. a very high localized current density and high temperature were observed with the help of simulation. the results state that both, avalanche branch and negative differential resistance branch are same on the static characteristics. when the igbt is still conducting current through its mos channel during short-circuit, no destruction of the device was found. as soon as the mos channel ended, the operation points are moving into the ndr branch by approaching the igbt towards destruction. the stability of the short-circuit turn-off can be achieved with adjustment of the bipolar current gain. a high gate turn-off resistor can suppress the filamentation but it will increase the short-circuit turn-off losses. a trade-off has to be found. references [1] j. lutz, h. schlangenotto, u. scheuermann and r. d, donker, semiconductor power devices physics, characteristics, reliability. springerlink, 2011, chapter 10, pp. 315-340. doi: 10.1007/978-3-64211125-9 [2] j. tihanyi, "mos-leistungsschalter", etg-fachtagung bad nauheim, fachbericht nr. 23, vde-verlag, pp. 71-78, mai 1988. [3] g. miller, j. sack, "a new concept for a non punch through igbt with mosfet like switching characteristics", proceedings of the pesc '89, vol. 1, pp. 21-25, june 1989. doi: 10.1109/pesc.1989.48468 [4] t. laska et al, "short circuit properties of trench/field stop igbts design aspects for a superior robustness", proceedings of the 15th international symposium on power semiconductor devices & ics, cambridge, pp. 152-155, april 2003. doi: 10.1109/ispsd.2003.1225252 [5] t. basler, r. bhojani, j. lutz and r. jakob, "measurement of a complete hv igbt iv characteristic up to breakdown point", 15th europian conference on power electronics and applications (epe), pp. 1-9, september 2013. doi: 10.1109/epe.2013.6634454 [6] t. basler, r. bhojani, j. lutz and r. jakob, "dynamic self-clamping at short-circuit turn-off of highvoltage igbts", proceedings of the 25th international symposium on power semiconductor devices & ics, japan, pp. 277-280, may 2013. doi: 10.1109/ispsd.2013.6694440 [7] t. basler, j. lutz, t. brückner and r. jakob, "igbt self-turn-off under short-circuit condition", international seminar on power semiconductor, prague, pp. 235-242, september 2013. [8] urls: https://www.bibliothek.tu-chemnitz.de/uni_biblio/frontdoor.php?source_opus=7514 [9] t. basler, j. lutz, r. jakob and t. brückner, "the influence of asymmetries on the parallel connection of igbt chips under short-circuit condition", 14th europian conference on power electronics and applications (epe), pp. 1-8, september 2011. [10] urls: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6020357 [11] m. rahimo, a. kopta, s. eicher, u. schlapbach, and s. linder, "switching-self-clamping-mode “sscm“, a breakthrough in soa performance for high voltage igbts and diodes", proceedings of the 16th international symposium on power semiconductor devices & ics, japan, pp. 437-440, may 2004. doi: 10.1109/ispsd.2004.1332970 [12] h. g. eckel and l. sack, "experimental investigation on the behaviour of igbt at short-circuit during the on-state", 20th international conference on industrial electronics, control and instrumentation (iecon), vol. 1, pp. 118-123, september 1994. doi: 10.1109/iecon.1994.397762 [13] lutz j, döbler r, mari j, menzel m: “short circuit iii in high power igbts” proceedings epe, barcelona (2009) urls: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5279057 [14] j. lutz and t. basler: "short-circuit ruggedness of high-voltage igbts", 28th international conference on microelectronics (miel), pp. 243-250, may 2012. doi: 10.1109/miel.2012.6222845 http://dx.doi.org/10.1109/pesc.1989.48468 http://dx.doi.org/10.1109/ispsd.2003.1225252 http://dx.doi.org/10.1109/epe.2013.6634454 http://dx.doi.org/10.1109/ispsd.2013.6694440 http://dx.doi.org/10.1109/ispsd.2004.1332970 http://dx.doi.org/10.1109/iecon.1994.397762 http://dx.doi.org/10.1109/miel.2012.6222845 igbts working in the ndr region of their i-v characteristics 15 [15] t. balser, "short-circuit ruggedness of high-voltage igbts", phd thesis, technische universität chemnitz, february 2014. [16] urls: http://www.qucosa.de/fileadmin/data/qucosa/documents/14710/dissertation_thomas_basler.pdf [17] r. bhojani, "simulation of high-voltage igbts in short-circuit and avalanche mode", master thesis, technische universität chemnitz, april 2013. [18] p. rose, d. silber, a. porst and f. pfirsch, "investigations on the stability of dynamic avalanche in igbts", proceedings of the 14th international symposium on power semiconductor devices & ics, new mexico, pp. 165-168, june 2002. doi: 10.1109/ispsd.2002.1016197 [19] t. raker, h. felsl, f. niedernostheide, f. pfirsch, and h. schulze, "limits of strongly punch through designed igbts", proceedings of the 23rd international symposium on power semiconductor devices & ics, u.s.a., pp. 100-103, may 2011. doi: 10.1109/ispsd.2011.5890800 [20] z. chen, k. nakamura and t. terashima, "ltp(ii)-cstbttm(iii) for high voltage application with ultra robust turn-off capability utilizing novel edge termination design", proceedings of the 24rd international symposium on power semiconductor devices & ics, belgium, pp. 25-28, june 2012. doi: 10.1109/ispsd.2012.6229014 [21] d. dibra, m. stecher, s. decker, a. lindemann, j. lutz and c. kadow, "on the origin of thermal runaway in a trench power mosfet", ieee trans. on electron devices, vol. 58, pp. 3477–3483, october 2011. doi: 10.1109/ted.2011.2160867 http://dx.doi.org/10.1109/ispsd.2002.1016197 http://dx.doi.org/10.1109/ispsd.2011.5890800 http://dx.doi.org/10.1109/ispsd.2012.6229014 http://dx.doi.org/10.1109/ted.2011.2160867  facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 291-305 https://doi.org/10.2298/fuee2102291s © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper coefficient quantization effects on new filters based on chebyshev fourth-kind polynomials biljana p. stošić university of niš, faculty of electronic engineering, niš, serbia abstract. the aim of this paper is to construct non-recursive filters, extensively used type of digital filters in digital signal processing applications, based on chebyshev orthogonal polynomials. the paper proposes the use of the fourth-kind chebyshev polynomials as functions in generating new filters. in this kind, low-pass filters with linear phase responses are obtained. comprenhansive study of the frequency response characteristics of the generated filter functions is presented. the effects of coefficient quantization as one type of quantization that influences a filter characteristic are investigated here also. the quantized-coefficient errors are considered based on the number of bits and the implementation algorithms. key words: chebyshev recursion, orthogonal polynomials, non-recursive filters, linear phase characteristic, coefficient quantization, implementation structure 1. introduction digital filters are used in a wide variety of digital signal processing (dsp). most of the time, the final goal of using a filter is to achieve a kind of frequency selectivity on the spectrum of the input signal. till now, researchers have suggested different methods for improving the digital filter efficiency as presented in [1]-[8]. different methods presented in [4]-[8] share the same idea, namely, using cic (cascade-integrator-comb) sections with some added solutions to improve filter attenuation. different methods are proposed to compensate for the passband droop as it is described in [9]-[17]. the objective of the paper [11] has been to categorize and describe the most important methods for compensator designs, proposed till than, and to propose some future direction for the compensator designs. in [12][17], new compensator designs are desribed and applied to different filters. chebyshev polynomials have been the focus of many studies and have drawn a wide attention due to their frequent appearance in various applications in polynomial approximation, integral and differential equations, etc. there are four kinds of these polynomials as projected by mason and handscomb [18] which leads to an extended received october 15, 2020; received in revised form january 12, 2021 corresponding author: biljana p. stošić faculty of electronic engineering, aleksandra medvedeva 14, 18115 niš, serbia e-mail: biljana.stosic@elfak.ni.ac.rs 292 b. stošić range of new filter functions. the chebyshev polynomials of the first-kind [19]-[21] are used to generate fir (finite impulse response) filters in [3] and integer coefficients of coleman filter in [20]. filter functions recently presented in [22] and [23] prove the use of the firstand second-kind chebyshev polynomials in filter design, respectively. the principle idea behind obtaining these filter functions is based on coleman filter described in [20]. usually, chebyshev polynomials of the fourth-kind are known less. the aim of this paper is to construct non-recursive filters, extensively used type of digital filters in dsp applications, based on these polynomials. the presented design algorithm leads to filter functions having a linear phase characteristic which is very important. however, if the phase characteristic is nonlinear, the phase delay of the individual frequency components of the signal is not equal, and a change in signal shape occurs. in dsp, quantization has a great influence. coefficient quantization represents a type of quantization that influences a frequency response of digital filter. hardware implementation of digital filters requires quantization of filter coefficients to the word size of registers. the goal is to obtained quantized frequency characteristic that has more similarity to frequency characteristic of infinite precision filter. the contribution of this study is twofold. firstly, it has been mathematically proved that it is possible to obtain novel filter functions by considering chebyshev orthogonal polynomials. some characteristics of them are shown here to demonstrate their usefulness in communication systems. to the best of authors’ knowledge, this is the first study that investigates the use of the fourth-kind chebyshev polynomials as functions in generating new filters. as the second contributation, after designing a digital filter, the effects of the coefficient quantization on its frequency characteristic have to be examined and studied. if the quantized filter does not meet the target specifications, the designer needs to redesign the filter. in particular, it will be study how magnitude response of the filter is affected by coefficient quantization. also, different implementation structures will be considered in order to suggest the best solution. this paper is unscrewed into several sections. the design procedure of the novel filters and the verification of the designed filters are discussed in sections 2 to 4. then, section 5 elaborates the coefficient quantization’s effects on the filter frequency characteristic depending of the number of bits and the structure implementation algorithm. finally, the summary is drawn in section 6. 2. coleman filter: a brief overview the recursion for generation of the chebyshev polynomials of the first-kind [19]-[21] denoted as tn(x) is 1 2 1 , 0 ( ) , 1 2 ( ) ( ), 1 n n n n t x x n x t x t x n− − =  =   −  (1) the chebyshev polynomials of the first-kind are used to generate coleman filter form given in [20]. the frequency response is calculated as g(f) = 2−20t7(f(f)), where the function ( ) 2 2 cos(2 )f f f= +  is used and t7(x) represents the chebyshev polynomial coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 293 of the first-kind of degree seven. there, the exact functions with chebyshev polynomials of degree n are obtained by following relation ( ) (0) ( ( ))n ng f g t f f=  , (2) where the constant is calculated as (0) ( (0))ng t f= . 3. the new generated filter forms design of a digital filter involves the following steps: (1) filter specification, (2) filter coefficient calculation, (3) realization, (4) analysis of finite word length effect and (5) implementation. some of the steps will be described in the following sections. 3.1. filter specifications the filter specifications are determined by the applications. once the specifications are defined, various concepts and mathematics can be used to come up with a filter description that approximates the given set of specifications. in the case of new suggested design, for given specifications like passband cut-off frequency, stopband cut-off frequency, maximum and minimum attenuations, the sampling frequency as well as the filter order can be calculated by using exact formulas for design of chebyshev filters. the actual attenuation of the filter depends on the filter order (the higher the order, the higher the attenuation). here, in case of lowpass filter, the group delay is equal to the filter order. meeting the specifications is not guaranteed a-priori, trial and error is often required. if the resulting filter does not meet the specifications, one can adjust the filter parameters, i.e. changing the filter order could help to resolve the problem. in order to obtain more attenuation, some optimization can be done, like increasing filter order or free parameter v . this design approach is superior in that by varying one parameter v a much better design can be obtained for the same filter order. 3.2. definition of fourth-kind chebyshev polynomials a brief overview of basic definition of chebyshev polynomials of the fourth-kind [9], [21] is given here. usually, the polynomials are defined according to the trigonometric formula. the nth chebyshev polynomials of the fourth-kind at the point x are denoted as wn(x). a simplified definition of the polynomials on the interval x  [−1,1] by using recurrence relations is as follows 1 2( ) 2 ( ) ( )n n nw x x w x w x− −=   − , (3) where n = 2,3,... represents polynomial degree and the initial conditions are w0(x) = 1 and w1(x) = 2  x + 1. 294 b. stošić 3.3. design procedure: filter coefficient calculation the chebyshev polynomials of the fourth-kind are used here to generate different low-pass filter functions. in this case, the new filter functions are generated by equation , ( ) (0) ( ( ))n new new n newg f g w f f=  , (4) where the normalized constant gnew(0) = wn(fnew(f)) is calculated for f = 0, and applied cosine function ( ) 2 cos(2 )newf f v f= +  , (5) with parameter 1 2v  . equations (4) and (5) allow one to predict how the filter will respond to varying frequency and constant parameter v. in order to analyze filter characteristics, a few filter examples are designed by using matlab environment. the function proposed by j. coleman [20], eq. (2), and functions of new filters, eq. (4), for filter order n, are arranged here in rectangular form as the following unique function of frequency  ( ) [ (0) (1) ( ) ... ( ) cos( )] / (0)ng a a cos a n n g = +   + +   , (6) which is normalized with the constant (0)g or (0)newg . assume that the transfer function ( )h z of designed filter can be presented as 1 ( ) 0 ( ) ( ) ( ) [ ] n n k n k k h z h n h k z z . (7) the filter coefficients show the symmetry around the center value. 4. design examples 4.1. magnitude and phase responses normalized curves of designed low-pass filters with functions f(f), v = 2 and fnew(f), v = 1 or 2, versus normalized frequency f =  / , are summarized in figs. 1 and 2, for filter orders n = 5 and n = 6, respectively. examples of odd and even orders are generated. the filter characteristics generated by eq. (4), for the function fnew(f) and v = 1, and different filter order n show higher selectivity in the transient area in comparison with both designed functions f(f) and fnew(f) for v = 2. the worst-case suppression in the stop-bands for new filters with fnew(f) is between 63.81 db and 76.41 db, for n = 5 as shown in fig. 1. the worst-case suppression in the stop-bands for new filters with fnew(f), shown in fig. 2, for the case of n = 6 are between 75.52 db and 90.78 db. coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 295 fig. 1 normalized filter curves in dbs for case 5n = fig. 2 normalized filter curves in dbs for case 6n = 296 b. stošić table 1 gives some filter characteristics, such as pass-band cut-off frequency fcp at max = 0.1 db, and minimum attenuation max at stop-band cut-off frequency fcn. the listed values of stop-band cut-off frequencies indicate higher selectivity of filter functions with parameter v = 1. a low-pass filter seeks to eliminate all frequencies in the stop-band, that is, all frequencies above cut-off frequency are desired to be filtered out. in these cases, high suppression level in stop-band is evidently desirable. the main key features of the designed filters are good in band and out band performance. table 1 characteristics of designed fir filters parameter n 5 6 parameter v 1 2 1 2 max @ fcp 0.0263 0.0305 0.0239 0.0278 max @ fcn 63.81@0.50 76.41@0.67 75.52@0.50 90.78@0.66 the generated filter characteristics by eq. (5) for the function fnew(f), filter order 5n = and different values of parameter 1 2v  are depicted in fig. 3. the magnitude characteristics of designed filters have a passband droop in the passband that is dependent upon the parameter v . depending on chosen normalized frequency, passband droop can vary about 0.0038 db at normalized frequency 0.01, 0.0152 db at frequency 0.02, or 0.0581 at 0.025, for different parameter v values. the passband droop is higher in case when the parameter v has smaller value (the width of passband is smaller in this case as shown in table 1). fig. 3 normalized new filter curves in dbs for case 5n = and 1 2v  . in order to achieve correct performance, the filter should have a flat passband. the passband droop can be further improved by applying an additional filter, called compensating filter or compensator. this idea for improving the passband is given and applied on some other filters (comb, cic and new cic filters) like it is shown in [4] and [9]-[17]. investigation coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 297 can be done in order to elaborate which suggested method is the most convenient for passband droop compensation in these suggested filters. the comparison of filter coefficients, a(i), i = 0,1,2,..., n, from eq. (6) and n = 5is done in tabular form, table 2. there are listed coefficients of the filters based on first-, secondand fourth-kind chebyshev polynomials and different value of parameter v = 1 or 2. it is obvious in all cases that the filter coefficients calculated for case of v =1 have smaller values then the one calculated for v =2. table 2 coefficients of designed filter functions ( )ng  : a comparison literature [20] [23] [22] new filter functions 5n = first-kind chpoly* 2v = first-kind chpoly 1v = secondkind chpoly 2v = secondkind chpoly 1v = fourthkind chpoly 2v = fourthkind chpoly 1v = (0)g 15124 3363 30744 6930 34633 8107 (0)a 3642 681 7436 1414 8477 1679 (1)a 6130 1210 12492 2508 14180 2964 (2)a 3600 840 7296 1728 8168 2024 (3)a 1400 440 2816 896 3072 1024 (4)a 320 160 640 320 672 352 (5)a 32 32 64 64 64 64 *chpoly – chebyshev polynomials in comparison with traditional fir filters, the designed filters have higher suppression level in stopband for the same filter order. the difference is more than 30 db in favor of new designed filters. figure 4 shows the linear phase response of the designed new filter. the amplitudes of the individual frequency components will not change by passing the signal through such a filter. the group delay of the designed filters is equal to the filter order n . fig. 4 magnitude and phase responses for case 5n = and 2v = 298 b. stošić 4.2. pole-zero plots figure 5 graphically displays the locations of an unquantized system’s poles and zeros. this is a two-dimensional plot of the z-plane that shows the unit circle, the real and imaginary axes, and the position of the system’s zeros. a location having multiple poles is marked with a number next to that location to indicate how many poles exist there. fig. 5 pole-zeros plot of filter designed for 5n = and 2v = the zeros of a linear-phase filter are of three different arrangements which include: a) a pair of complex-conjugate zeros which are not on the unit circle along with their reciprocals, e.g. z2, z* 2, 1 / z* 2 and 1/ z2; b) a pair of complex-conjugate zeros on the unit circle such as z3, z* 3, z4 and z* 4, and finally, c) a real zero which is not on the unit circle along with its reciprocal such as z1 and 1 / z1. the filter with the transmission function having zeros in the left half-plane has a smaller phase, which means smaller signal delay. the zeros do not need to be inside the unit circle to maintain the stability. as shown in this figure, some zeros are moved out of the unit circle. recall that zeros near the unit circle can be expected to have a strong influence on the magnitude frequency response of the filter. this example shows that after designing a filter, the effect of the coefficient quantization have to be examined because they have direct influence on filter zeros. if the quantized filter does not meet the target specifications, the designer needs to redesign the filter. 5. realization and analysis of finite word length effect a design of digital filters involves finding the coefficients of the filter which is described in section 3. for computing the coefficients of digital filter, infinite precision arithmetic is used (the number of digits is only limited by available memory of the system). coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 299 as it is known, a common filter design tool like matlab, can run the design algorithm and return the filter coefficients. after designing a digital filter, the effects of the coefficient quantization on its frequency response have to be examined and studied. if the quantized filter does not meet the target specifications, the designer needs to redesign the filter. in dsp system, the number of bits in designing a filter is limited by word length of the register used to store them (registers have a fixed number of bits). quantization methods like rounding and truncating are used to quantize the filter coefficients to the word size of the register [24], [25]. the designed coefficients have to be converted or quantized to a fixed-point representation [24]. a signed fixed-point representation with b + 1 total bits including sign is used here. notice that filter coefficients of the novel designed fir filters are smaller than 1. because of that, b + 1-bit format which reserve 1 bit for sign, 1 bit for integer part and b − 1 bits for the fractional part has been chosen for coefficient representation. since a digital filter uses a finite number of bits to represent signals and filter coefficients, it is needed to find structure which can somehow retain the target filter specifications even after quantizing the coefficients. below is given analysis of the direct-form structure and cascade-form structure, respectively. the main difference between the aforementioned realization structures is their sensitivity to using a finite length of bits. 5.1. direct-form structure the direct-form structure is directly obtained from the difference equation. the coefficients of the new filter according to eq. (7), for 6n and parameter 2v = are listed in table 3, and for parameter 1v = in table 4. the filter coefficients obtained by using different number of bits are presented in these tables. table 3 the unquantized and quantized filter coefficients, 1b+ -bit format, for 6n and 2v = k ( )h k unquantized ( )newh k quantized b=7 ( )newh k quantized b=15 ( )newh k quantized b=31 0 0.000234721982814 0 0.000244140625000 0.000234722159803 1 0.002934024785174 0 0.002929687500000 0.002934024669230 2 0.016371858301273 0.015625000000000 0.016357421875000 0.016371858306229 3 0.054455500012836 0.046875000000000 0.054443359375000 0.054455500096083 4 0.121409945610516 0.125000000000000 0.121398925781250 0.121409945189953 5 0.192611392084735 0.187500000000000 0.192626953125000 0.192611391656101 6 0.223965114445304 0.218750000000000 0.223937988281250 0.223965113982558 300 b. stošić table 4 the unquantized and quantized filter coefficients, 1b+ -bit format, for 6n and 1v = k ( )h k unquantized ( )newh k quantized b=7 ( )newh k quantized b=15 ( )newh k quantized b=31 0 0.001354526021715 0 0.001342773437500 0.001354525797069 1 0.008804419141146 0.015625000000000 0.008789062500000 0.008804419077933 2 0.030138203983153 0.031250000000000 0.030151367187500 0.030138203874230 3 0.070435353129167 0.078125000000000 0.070434570312500 0.070435353554785 4 0.123600499481471 0.125000000000000 0.123596191406250 0.123600499704480 5 0.170797265550594 0.171875000000000 0.170776367187500 0.170797265134752 6 0.189739465385511 0.187500000000000 0.189758300781250 0.189739465713501 obviously, there are changes in the filter coefficients and they depend on used number of bits, so the filter frequency response will change correspondingly. as examples of affecting the magnitude response of a filter by coefficient quantization, new low-pass filters with different orders are designed and different number of bits are considered. normalized curves are pictured in figs. 6-9. fig. 6 new filter curves in dbs: 5n = , 2v = coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 301 fig. 7 new filter curves in dbs: 6n = , 2v = fig. 8 new filter curves in dbs: 5n = , 1v = 302 b. stošić fig. 9 new filter curves in dbs : 6n = , 1v = it can be concluded that the quantization of filter coefficients creates a deviation in the frequency response of the filter as seen in figs. 5-8. note that if the wordlength b is not large enough, there will be undesirable effects. in summary, after coefficient quantization, a filter having a frequency response diverge from the frequency response of a filter with unquantized coefficients is obtained. the quantization effect is more visible and more significant in the stopband area. conclusion from this analysis and given characteristics: the new designed filters realizated by direct-form exhibit high sensitivity to the coefficient quantization. 5.2. cascade-form structure in this part of the article, it will be shown that implementing a high-order filter as a cascade of second-order sections can significantly reduce the sensitivity to the coefficient quantization. the cascade structure is obtained from the system function h(z). the idea is to decompose the target system function into a cascade of second-order fir systems. in other words, we need to find second-order systems which satisfy [ /2] [ /2]1 1 2 0 1 2 0 1 1 ( ) ( ) ( ) m mm k k k k k k k k k h z b z b b z b z h z − − − − = = = =  = +  +  =   (8) or [ /2] [ /2]1 1 2 0 1 2 0 1 1 ( ) ( ) ( ) m mm k k k k k k k k k h z b z g b b z b z g h z − − − − = = = =  =  +  +  =    , (9) where 0 1 2, ,k k kb b b represent filter coefficients and g represents a gain factor. a software implementation, such as a matlab code which use the tf2sos function, is applied to convert the transfer function into the cascade form insted of tedious mathematics. function tf2sos converts forward and feedback path coefficients of the filter coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 303 into numerator and denominator coefficients of the second-order sections. then the coefficients of the second-order sections are quantized and the frequency response of the obtained structure with that of the unquantized system are compared. to clarify converting a system function into the cascade form, as well as the effects of the chosen bit number for quantization, a few examples given below in table 5 are reviewed. each row in the table 5 gives the transfer function of one of the second-order sections. the first three numbers of each row represent the numerator of the corresponding secondorder section and the second three numbers give its denominator. the tf2sos comand can also give a gain factor g, which can be included in the cascade-form structure. from the listed coefficient values it can be concluded that increasing coefficient word bit widths can be a viable option. also, the case of using the tf2sos command which gives a gain factor is desirable one due to better coefficient resistance to quantization errors. 5.3. performance analysis notes the main difference between the aforementioned realization structures, directand cascade-form, is their sensitivity to using a finite length of bits. the realizations, such as direct forms, are very sensitive to quantization of the coefficients. however, structures with cascaded second-order sections show smaller sensitivity and are preferred. the analyzed examples show that implementing a high-order filter as a cascade of secondorder sections can significantly reduce the sensitivity to the coefficient quantization. table 5 the second-order sections and their coefficients for 5n = and 2v = function: sos = tf2sos(b,a); unquantized coefficients 0.000923974244218 0.002844143378878 0.000923974244218 1.000000000000000 0 0 1.000000000000000 3.487567927223607 3.069689062680776 1.000000000000000 0 0 1.000000000000000 1.713003943968079 1.000000000000962 1.000000000000000 0 0 1.000000000000000 1.085134395891595 0.999999999999881 1.000000000000000 0 0 1.000000000000000 1.136130681644964 0.325765893411380 1.000000000000000 0 0 quantized coefficients 7b = 0 0 0 1.000000000000000 0 0 1.000000000000000 3.484375000000000 3.062500000000000 1.000000000000000 0 0 1.000000000000000 1.718750000000000 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.078125000000000 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.140625000000000 0.328125000000000 1.000000000000000 0 0 note: impossible to get quantized transfer function, equal to zero! quantized coefficients 15b = 0.000915527343750 0.002868652343750 0.000915527343750 1.000000000000000 0 0 1.000000000000000 3.487548828125000 3.069702148437500 1.000000000000000 0 0 1.000000000000000 1.713012695312500 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.085144042968750 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.136108398437500 0.325744628906250 1.000000000000000 0 0 note: the two graphs shows a very good agreement! function: [sos,g] = tf2sos(b,a); unquantized coefficients 1.000000000000000 3.078163051271750 0.999999999999806 1.000000000000000 0 0 1.000000000000000 3.487567927223607 3.069689062680776 1.000000000000000 0 0 1.000000000000000 1.713003943968079 1.000000000000962 1.000000000000000 0 0 1.000000000000000 1.085134395891595 0.999999999999881 1.000000000000000 0 0 1.000000000000000 1.136130681644964 0.325765893411380 1.000000000000000 0 0 g = 9.239742442179425e-04 quantized coefficients 7b = 1.000000000000000 3.078125000000000 1.000000000000000 1.000000000000000 0 0 1.000000000000000 3.484375000000000 3.062500000000000 1.000000000000000 0 0 1.000000000000000 1.718750000000000 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.078125000000000 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.140625000000000 0.328125000000000 1.000000000000000 0 0 g = 9.239742442179425e-04 note: the two graphs shows a very good agreement! quantized coefficients 15b = 1.000000000000000 3.078186035156250 1.000000000000000 1.000000000000000 0 0 1.000000000000000 3.487548828125000 3.069702148437500 1.000000000000000 0 0 1.000000000000000 1.713012695312500 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.085144042968750 1.000000000000000 1.000000000000000 0 0 1.000000000000000 1.136108398437500 0.325744628906250 1.000000000000000 0 0 g = 9.239742442179425e-04 note: the two graphs are barely distinguishable from each other! 304 b. stošić 6. concluding remarks the presented approach for filter design which relies on the fourth-kind chebyshev polynomials is computationally very simple. the chebyshev polynomials can be used here to produce a set of low-pass non-recursive filter coefficients. filter characteristics have been fully demonstrated through numerical examples to illustrate the efficiency and accuracy of the design approach. when implementing a digital filter in the real world, a finite number of bits to represent each coefficient has to be used. the frequency response of the quantized filter might be quite different from that of the original design. filter stability based on quantization effect on filter characteristics has been also analyzed on several examples. in practice, it is reasonable to do coefficient quantization of a single filter and measure the effect on its frequency response. implementing a higher-order filter requires a higher number of bits for coefficient representation, and a cascade of second-order sections used as implementation algorithm can significantly reduce the sensitivity to the coefficient quantization. acknowledgment: the ministry of education, science and technological development of the republic of serbia has supported this research. references [1] b. a. shenoi, introduction to digital signal processing and filter design. new jersey: john wiley & sons, 2006. [2] s. k. mitra, digital signal processing: a computer-based approach. new york: mcgraw-hill education, 2011. [3] v. d. pavlović, n. s. dončov and d. g. ćirić, "1d and 2d economical fir filters generated by chebyshev polynomials of the first kind", int. j. electron., vol. 100, no. 11, pp. 1592–1619, march 2013. [4] b. p. stošić and v. d. pavlović, "design of new selective cic filter functions with passband-droop compensation", iet electron. lett., vol. 52, no. 2, pp. 115–117, january 2016. [5] g. jovanović doleček and c. j. s. cruz, "improving design of comb decimation filters using symmetrical polynomials", in proceedings of the 2019 ieee international fall meeting on communications and computing (roc&c), 2019, pp. 9–12. [6] g. jovanović doleček , "improving magnitude response of comb two-stage structure using simple multiplierless filters", in proceedings of the 2019 ieee 31st international conference on microelectronics (miel), serbia, niš, 2019, pp. 223–226. [7] g. jovanović doleček , "exploring three classes of symmetrical polynomials for improving comb filter design", in proceedings of the aip conference, vol. 2116, no. 1, pp. 450036-1–450036-4, 2019. [8] a. dudarin, g. molnar and m. vucic, "optimum multiplierless compensators for sharpened cascadedintegrator-comb decimation filters", electron. lett., vol. 54, no. 16, pp. 971–972, august 2018. [9] g. molnar, a. dudarin and m. vucic, "design of multiplierless cic compensators based on maximum passband deviation", in proceedings of the 2017 40th international convention on information and communication technology, electronics and microelectronics (mipro), opatija, croatia, 2017, pp. 119-124. [10] g. jovanović doleček , "multiplierless wideband and narrowband cic compensator for sdr application", int. j. commun. netw. syst. sci., vol. 10, no. 8b, august 2017. [11] g. jovanović doleček , "design of compensators for comb decimation filters", in encyclopedia of information science and technology, fourth edition, edited by mehdi khosrow-pour, igi global, 2018, pp. 6043-6056. [12] g. jovanović doleček , "improving magnitude response of comb two-stage structure using simple multiplierless filters", in proceedings of the 2019 ieee 31st international conference on microelectronics (miel), nis, serbia, 2019, pp. 223-226. https://digital-library.theiet.org/search;jsessionid=1qp0art4j9aao.x-iet-live-01?value1=&option1=all&value2=a.+dudarin&option2=author https://digital-library.theiet.org/search;jsessionid=1qp0art4j9aao.x-iet-live-01?value1=&option1=all&value2=g.+molnar&option2=author https://digital-library.theiet.org/search;jsessionid=1qp0art4j9aao.x-iet-live-01?value1=&option1=all&value2=m.+vucic&option2=author coefficient quantization effects on filters based on chebyshev fourth-kind polynomials 305 [13] g. jovanović doleček and c. j. s. cruz, "decimation structures for power of three decimation factors for consumer devices," in proceedings of the 2019 ieee 23rd international symposium on consumer technologies (isct), ancona, italy, 2019, pp. 181-185. [14] g. jovanović doleček and c. j. s. cruz, "improving design of comb decimation filters using symmetrical polynomials", in proceedings of the 2019 ieee international fall meeting on communications and computing (roc&c), acapulco, mexico, 2019, pp. 9-12. [15] g. jovanović doleček , "design of multiplierless comb compensators with magnitude response synthesized as sinewave functions", fu elec energ, vol. 33, no. 1, pp. 1-14, march 2020. [16] g. jovanović doleček and j. m. de la rosa, "design of wideband comb compensator based on magnitude response using two sinusoidals and particle swarm optimization", aeu-int. j. electron. commun., vol. 130, p. 153570, december 2020. [17] g. jovanović doleček , l. camuñas-mesa and j. m. de la rosa, "low order wideband multiplierless comb compensator", in proceedings of the 2020 ieee 63rd international midwest symposium on circuits and systems (mwscas), springfield, ma, usa, 2020, pp. 162-165. [18] j. c. mason and d. c. handscomb, chebyshev polynomials. chapman and hall/crc, 2002. [19] j. o. coleman, "chebyshev stopbands for cic decimation filters and cic-implemented array tapers in 1d and 2d", ieee trans. circ. syst. i: reg. papers, vol. 59, no. 12, pp. 2956–2968, december 2012. [20] j. o. coleman, "integer-coefficient fir filter sharpening for equiripple stopbands and maximally flat passbands", in proceedings of the 2014 ieee international symposium on circuits and systems (iscas), melbourne vic, australia, 2014, pp. 1604–1607. [21] m. abramowitz and i. a. stegun, handbook of mathematical functions with formulas, graphs, and mathematical tables. usa, national bureau of standars, applied mathematics series, 1972. [22] b. p. stošić and v. d. pavlović, "chebyshev polynomials of the second kind in filter design", in proceedings of the 2017 13th international conference on advanced technologies, systems and services in telecommunications (telsiks), serbia, niš, 2017, pp. 191–194. [23] b. p. stošić and v. d. pavlović, "chebyshev recursion in design of linear phase low-pass fir filter with equiripple stop-band", proceedings of the romanian academy, series a, vol. 20, no. 3/2019, pp. 267–273, november 2019. [24] a.v. oppenheim, r.w. schafer, discrete-time signal processing. vol. 3, prentice hall englewood cliffs, nj, 2010. [25] b. p. lathi, r. a. green, essentials of digital signal processing, cambridge university press, 2014. 10744 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 17-29 https://doi.org/10.2298/fuee2301017k © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the impact of finite dimensions on the sensing performance of terahertz metamaterial absorber anja kovačević, milka potrebić, dejan tošić university of belgrade, school of electrical engineering, belgrade, serbia abstract. this paper investigates the impact of finite number of unit cells on the sensing performance of chosen thz metamaterial absorber. sensor models with different number of unit cells varying from 16 to infinite have been created using wipl-d software. the results of comparison show that as the sensor’s size increases, its absorption response becomes more similar to the one of an infinite sensor structure. metamaterial absorber with 50 unit cells expresses the similar behavior in terms of the corresponding frequency and amplitude shifts as the infinite absorber when the h9n2 virus sample of variable thickness is uniformly deposited on the top of the sensors’ surface. the uneven distribution of sample affects the sensor’s absorption response which has been proven on the example of sensor with 50 unit cells. key words: thz metamaterial absorber, finite dimensions, absorption response, h9n2 virus sample 1. introduction various metamaterials have been artificially designed to manipulate electromagnetic (em) waves in the manner that enables their functional use in a wide range of device applications such as in switches, modulators, filters and sensors [1]. basically, metamaterials are structures with periodic sub-wavelength metallic [1] or dielectric [2, 3] patterns that possess em properties that are not found in natural materials [2]. metamaterial metallic-based structures inherently have dissipation losses which can be used to enhance their absorption capabilities [1]. metamaterial absorbers (ma) are devices that can minimize the reflection and theoretically eliminate transmission of the incident em wave [4]. they are typically designed as metaldielectric-metal structures [1, 5–7], but other possible designs include dielectric grating-based structures [4], integrated microfluidic structures [8] and dielectric-metal structures [2]. mas can be used in solar power harvesting, material detection, thermal imaging and sensing [4]. received may 08, 2022; revised july 02, 2022; accepted july 16, 2022 corresponding author: milka potrebić university of belgrade, school of electrical engineering, belgrade, serbia e-mail: milka.p@mts.rs 18 a. kovačević, m. potrebić, d. tošić mas that work in terahertz (thz) domain are crucial for bio-sensing applications since the vibration resonances of biomolecules coincide with the thz range [9]. besides that, thz technology has several different advantages relevant for the field of bio-sensing such as non-ionizing property and strong penetration capability [10]. sensors based on thz ma can be used to detect various virus subtypes with wide range of particle size [11]. since the physically realizable sensor has finite dimensions and therefore its structure cannot be fully periodical, we wanted to investigate the impact of finite number of unit cells on the sensing performance. first, we had to come up with proper modelling technique for both the infinite and finite sensor structure in wipl-d software. the whole modelling process alongside the geometrical and material properties of the chosen thz ma will be described in section 2. in section 3, the obtained results that describe the behavior of modelled sensor structures with and without the sample will be presented and thoroughly discussed including the case when the sample is unevenly spread across the ma’s surface. 2. sensor design and modelling process for the purpose of investigating the impact of finite dimensions on sensing performance, we have selected quad-band metamaterial absorber presented in [5]. the chosen ma is a typical planar metal-dielectric-metal structure whose quad-band absorption is achieved by introducing slight deformation to the traditional rectangular metallic resonator rather than using multiple single-band resonators of different sizes. although there are four resonant frequencies, we will focus our analysis on the range of the first resonant frequency which is below 1 thz, but the concept can be broadened to the higher frequencies. 2.1. unit cell and modelling of infinite sensor structure the unit cell structure is composed of metallic ground layer and perforated metallic resonator separated by a polyimide lossy dielectric spacer. the dimensions of interest are given in figure 1. both metallic layers are made of gold whose conductivity varies with the increase of frequency, but since the frequency range of interest is below 1 thz, the fixed value of 40.9 ms/m used in [5] is sufficient for obtaining good-quality results. if the analysis is to be extended to the range of higher frequencies, variation of conductivity can be taken into account by using drude model [12]. in addition, the ground layer is thicker than the skin depth in the whole frequency range of interest which is essential for proper isolation between the substrate and the sensor itself. metal dielectric: ɛ = 3(1+j0.05) 9.5 25 35 2.5 45.5 10 units μm 9 0.4 0.4 x y z fig. 1 thz ma unit cell with given dimensions тhe impact of finite dimensions on the sensing performance of terahertz metamaterial absorber 19 metamaterials are composed of a large number of meta-atoms represented by unit cells. consequently, the proper model of an infinite ma structure implies creating an orthogonal lattice of unit cells through the periodical repetition along the xand y-axes which can be achieved by using periodic boundary conditions (pbc). pbc are a set of boundary conditions applied for analysis of infinite 2d em structures by using a single unit cell [13]. the modelling process of an infinite sensor structure in wipl-d software using pbc option consists of three main steps. since pbc option is only available in scatterer operation mode, the first step is to choose an adequate scatterer mode. the bistatic radar cross-section (rcs) mode is more suitable for this particular structure considering the fixed position of field generator. second step involves setting the values that define unit cell in terms of the occupying space and spatial repetition. x and y values correspond to the start and end coordinates of the unit cell in xy-plane while the z values are recommended to be set to 10% higher values than the cell size determined by its geometry [13]. port 1 and 2 have been positioned at the top and on the bottom of the structure respectively. the last step consists of making planar unit cell structure by defining plates and their domains determined by the used materials and finally, specifying the source as a transverse electromagnetic (tem) plane wave vertically irradiated to the sensor surface and the frequency range of interest. additionally, the quality of planar structure model can be significantly improved by using imaging and edging. 2.2. modelling of finite sensor structure in order to create a model of finite sensor structure in wipl-d, whole modelling process has to be done manually since the pbc option is no longer suitable which results in significantly higher time-consumption. despite the introduced difficulties, the modelling of finite sensor has some significant advantages such as the ability to analyze the impact of the end effects which are inevitably present in the physically realizable structure and the possibility of modelling the uneven distribution of the sample across the sensor’s surface which will be demonstrated in section 3. to fully investigate the impact of dimensions on sensor performance, we have created models for different numbers of unit cells (16, 50, 100 and 400). although the expected dimensions of metamaterial biosensor device for experimental measurements are around 12 mm x 12 mm [14] which is equivalent to 24000 unit cells of the sensor observed in this paper, the thz source is usually focused on a much smaller area of the metamaterial sensor (approximately 1 mm2 [15] which is equivalent to around 167 unit cells). in order to improve the efficiency of simulations, we have exploited the symmetry of modelled structure and the excitation by using the symmetry plane in our models which has cut the number of unknowns around two times without compromising the results of numerical calculations. the simulation frequency range was set to the frequency range of the first resonant peak of the infinite structure. the example of modelling a sensor of finite dimensions is given for structure made of 50 cells in figure 2. 20 a. kovačević, m. potrebić, d. tošić fig. 2 modelling of the sensor with 50 unit cells (the pink plane represents the used symmetry plane) main difficulty that has occurred during the modelling process is how to adequately define sensor ports so that the results can be compared with the previously obtained results for an infinite structure. the main goal is to determine the scattering parameters of sensor which can be achieved by mimicking the process that has been incorporated into the functioning of pbc option. due to the existence of ground plane (figure 1), the transmission coefficients s21 and s12 are practically brought down to zero. for that reason, in order to reduce the complexity of analysis, we have observed only s11. by definition |s11| is: refl 11 inc p s p = (1) where prefl and pinc are powers of reflected and incident wave that had to be calculated in order to determine s11. it should be noted that the definition (1) is valid only on condition that s12 is equal to zero which has been fulfilled. to calculate these powers, we have simulated the near field distribution in the plane parallel to the sensor’s surface. the power of the wave can be calculated by using complex poynting vector s : * s' s' re d ' re ( ) d 'p        =  =              s s e h s (2) where e and h are field vectors described by their x, y and z components and ds’ = ds’iz is vector of the infinitely small surface ds'. after arranging expression (2), it is necessary to perform its discretization since the analysis has been conducted in a finite number of points n = nx ∙ ny: тhe impact of finite dimensions on the sensing performance of terahertz metamaterial absorber 21 * *re s' ( )x y y x n p e h e h    =  −      (3) where nx and ny are number of points along xand y-axes in which the near field distribution has been calculated and δs' = s' / n is an elementary surface of the observed surface s'. we have assumed that all the surfaces δs' are equal and small enough so that the field distribution is approximately constant within them. in order to find the optimal n which supports this assumption, we have varied the total number of points in which the near field distribution is calculated from 441 to 10201. we have concluded that increasing number of points doesn’t lead to the significant variations in the results. therefore, we have set the total number of points to 441 for structures of 16 and 50 cells, 1681 for 100 cells and 3721 for 400 cells. in order to get the near field distribution for the incident wave, we have created separate model with a single wire that doesn’t have significant impact on the field. the incident wave only has ex and hy components onwards marked as ex0 and hy0, thus simplifying power formula (3) to: * inc 0 0re s' ( )x y n p e h    = −       (4) minus sign has been added as the incident waves enters the surface. for calculating the power of reflected wave, we have used the field components imported from the sensor model from which we have subtracted the field components of incident wave to obtain the fields of reflected wave eir and hir (i = x, y): * * refl re s' ( )xr yr yr xr n p e h e h   =  −     (5) finally, we have used (1) to determine |s11| for different frequencies from the operating range. considering that the selected sensor was designed as ma, we have chosen the absorption as a reference parameter in our analysis. since the transmission through the structure is negligible due to the existence of ground plane, the absorption of the chosen ma is fully defined through the reflection described by s11: 2 111a s= − (6) where |s11|2 is normalized reflected power. 2.3. sample to investigate the sensing capabilities of both infinite and finite sensor structures, we have chosen the sample of h9n2 subtype of influenza a virus (iav). iavs are respiratory viruses with rna genome and a serious possibility of causing human epidemics or pandemics [16]. virus sample has been modeled as a continuous dielectric layer that completely covers the top of the ma structure. the complex permittivity of the sample has been determined by the frequency-dependant dispersive refractive index ( n = n + jk) derived from the drude-lorentz model 22 a. kovačević, m. potrebić, d. tošić 2 2 2 2 0 1.5 j p n      = = − − + (7) where ωp = 4 thz is the plasma frequency, ω0 = 2.8π thz is the resonant frequency and γ = 4 thz is the damping coefficient [17]. calculated n for certain frequency from the operating frequency range has been modified with coefficients a and b retrieved by thz spectroscopy for h9n2 sample of protein concentration 0.28 mg/ml into the form of complex refractive index an + b jk where 1.2a = and 1.4b = [17]. finally, the complex permittivity required by wipl-d software was calculated by squaring the corresponding complex refractive index. the whole process was repeated for each frequency used in simulation. it should be noted that coefficients a and b and therefore calculated values for complex permittivity of the sample refer to the specific protein concentration and may vary if it is changed. therefore, the samples of different concentrations can be treated as completely different sample types. during the analysis, we have varied the thickness of virus layer to examine the sensors’ behavior with different quantities of the deposited sample. the same analysis can be conducted for a different virus type by altering the coefficients a and b in addition to the parameters of drude-lorentz model given in (7). for example, for iav subtypes h1n1 and h5n2, the drude-lorentz parameters remain the same as for h9n2, but the coefficients a and b have to be modified to (1, 1.4) and (1, 1) respectively [17]. 3. results and discussion the results for selected thz ma are presented and discussed with the aim of investigating the effect that finite dimensions have on sensor’s properties and sensing capabilities. 3.1. behavior without the sample the absorption response of a finite sensor structure obtained in the frequency range of the first peak significantly varies with the change of number of unit cells (figure 3). as the number of cells increases, the peak width and its resonant frequency decrease while the prominence of the peak increases resulting in the response that becomes more similar to the one of an infinite sensor structure. all of the peaks show strong absorption which can be contributed to the combination of two effects: the influence of the perforated metallic resonator and the fabry-pérot effect as a consequence of the multiple reflections between the metallic layers [18]. in order to further compare infinite and finite structures, the corresponding q-factors have been calculated and presented in table 1 alongside with other parameters of interest such as resonant frequency fresonant, full-width at half-maximum (fwhm) and maximal absorption value (amax). the values given in table 1 numerically confirm conclusions made by observing figure 3. the structure with 16 cells does not have enough prominent resonant peak to determine fwhm and q-factor. as the number of unit cells increases, the sensor’s performance in the frequency range of the first resonant peak enhances which can be seen through the increase of q-factor. all of the made observations lead to a very important conclusion that the finite sensor structure with the sufficient number of unit cells can potentially give very approximate results to the ones that are theoretically obtained using the infinite sensor model. тhe impact of finite dimensions on the sensing performance of terahertz metamaterial absorber 23 fig. 3 absorption response of the finite structure for different numbers of unit cells in comparison with the response of the infinite structure table 1 numerical comparison of sensor models with different number of unit cells number of unit cells fresonant [thz] amax fwhm [thz] q-factor 16 0.883 0.983 / / 50 0.878 0.9742 0.169 5.2 100 0.877 0.9662 0.166 5.2 400 0.876 0.9663 0.147 6 infinite 0.864 0.9741 0.127 6.8 to gain a better insight into the underlying physical mechanism of investigated sensor structures, we have calculated the distributions of electric and magnetic fields for both the infinite and finite sensor with 50 unit cells at their first resonant frequencies. the sensor with 50 unit cells has been chosen for further analysis since it has fewer unit cells than other models with prominent peaks which reduced total modelling and simulation time. the results are presented in figure 4. figure 4 (a) shows that the electric field calculated in the parallel plane close to the sensor’s surface is mainly concentrated at the area around the resonator perforation. the electric field distribution is exactly the same for all the unit cells that compose the infinite sensor structure. on the contrary, figure 4 (b) shows that the field distribution on the finite sensor’s unit cell is dependent on its position in the structure. mentioned phenomenon is the direct consequence of the finite dimensions of the sensor and the end effect that occurs on the borders of the structure. figure 4 (c) and (d) show that the magnetic field distribution in the cross-section of both structures is fairly similar as the field is mainly gathered in the middle layer made of lossy dielectric. such confinement of electromagnetic field is typical for the metal–dielectric–metal structures as shown in [8]. the field localization predominately affects the sensing performance as the placement of the sample should coincide with the strongest wave-matter interaction zone in order to achieve high sensitivity. therefore, inverting the placement of the substrate and the sample has been proposed in an effort to enhance the interaction between the thz wave and the sample. mas with integrated microfluidic channels based on this approach were built and tested with solutions of ethanol, glucose and bovine serum albumin (bsa) [8, 19]. however, it should be noted that, due to the technical difficulties during placing and removing samples, these 24 a. kovačević, m. potrebić, d. tošić sensors may not be the most suitable candidates for applications that require large number of consecutive sensing tests and/or have samples that are not in the fully liquid form. (a) (b) (c) (d) fig. 4 distribution of electric field [v/m] for (a) infinite and (b) finite sensor model and magnetic field [ma/m] for (c) infinite and (d) finite sensor model at the first resonant frequency 3.2. behavior with the presence of sample the example of absorption response of both structures in the frequency range of the first peak for three different thicknesses (d) of h9n2 is given in figure 5. both structures show the similar behavior with the presence of virus sample as the resonant peak shifts to the left when the thickness of the sample layer is increased. consequently, the resonant frequency shift can be used not only as an indicator of the virus presence in the sample, but тhe impact of finite dimensions on the sensing performance of terahertz metamaterial absorber 25 also to determine the sample thickness. figure 5 also suggests that there is a certain limit in such detection because of the frequency shift saturation that the resonant peak undergoes when the sample thickness is increased to a certain extent. beside the frequency, the resonant peak amplitude also varies with the modification of sample properties as shown in figure 5. the values of both frequency and amplitude shifts for different thicknesses of the sample deposited on top of the both sensor structures are presented in table 2. it should be noted that, unlike the resonant frequency that never grows when the thickness of the sample increases, the resonant peak amplitude sometimes grows and sometimes declines. in that sense, the values for amplitude shifts given in table 2 are absolute values. table 2 shows that the resonant peak of the absorption response that corresponds to the finite structure experiences larger frequency shifts and saturates faster compared to the one of the infinite structure. additionally, the amplitude shifts are also more dynamic for the finite structure. fig. 5 comparison between the absorption responses of the finite sensor made of 50 unit cells with different thicknesses of h9n2 sample (full line) and the results for the infinite model (dashed line) table 2 frequency and amplitude shifts for different thicknesses of h9n2 sample deposited on top of the infinite and finite sensor structures structure thickness [µm] fresonant [thz] amax frequency shift [ghz] amplitude shift [x10-4] infinite 0 0.864 0.9741 0 0 1 0.827 0.9736 37 5 5 0.771 0.9844 93 103 8 0.750 0.9828 114 87 finite 0 0.878 0.9741 0 0 1 0.823 0.9268 55 473 5 0.761 0.9458 117 283 8 0.748 0.9840 130 99 the previously conducted analysis refers to the uniform distribution of the virus sample across the sensors’ surface. in order to investigate the impact of uneven sample distribution 26 a. kovačević, m. potrebić, d. tošić on the response, we have created several models with different sample distributions based on the model of sensor with 50 unit cells. these models have been created by removing the sample from certain unit cells thus creating the “holes” in the sample layer. since the observed structure has 50 unit cells, there are 250 different distributions that can be analyzed (each unit cell can be covered with the sample or not). taking into account the symmetry plane used in the modelling process shown in figure 2, the number of possible distributions decreases to 225 which is still considerable number to cover by analysis. in order to find the representative distributions to include into our models, we have set three possible parameters that have impact on the absorption response we wanted to characterize: the number of “holes”, the separation between them and their position in terms of the field distribution given in figure 4. let us first formalize the coordinates that describe the position of the “hole” in the sample placed on the top of the sensor’s surface as in figure 6. the gray unit cells from figure 6 belong to the part of the structure that is obtained by using symmetry plane. we can only choose the position of the “hole” from one of the white unit cells and that choice will automatically place another “hole” on the symmetrical gray unit cell. for example, if the “hole” is placed on (2, 3), it will also inevitably be placed on (2, -3). having that in mind, in the following analysis we will only declare the position of the “hole” from the white part of the structure and the position of the corresponding “hole” from the gray part will be implied. the number of “holes” will thus always be even. fig. 6 the coordinates of the “holes” in the sample first, the number of “holes” was set to two and their position and mutual distance were varied. the results presented in figure 7 indicate that placing two “holes” in the sample does lead to certain changes in the absorption response such as small frequency and amplitude shifts and slight deformations of the resonant peak’s shape. both the amplitude and the frequency of the resonant peak increase when two “holes” in the sample are introduced. the maximum increase for both parameters is achieved in the case of two тhe impact of finite dimensions on the sensing performance of terahertz metamaterial absorber 27 connected “holes” in the center of the structure ((3, 1) and its pair), corresponding maximal frequency and amplitude shifts are 3 ghz and 0.0074. the changes of resonant frequencies and amplitudes are the smallest when the “holes” are further away from the center whether the “holes” are connected ((5, 1) and its pair) or completely separated from each other ((4, 4), (2, 3) and their pairs). the differences between the absorption values for models with “holes” in the sample and the original model with uniform distributions indicate that the shape of the resonant peak is slightly altered with the introduction of two “holes”. fig. 7 absorption response for different positions of the “holes” in the 8 µm thick sample in the case of two “holes” next, the number of “holes” was increased to six and three different distributions were observed. the obtained results are shown in figure 8. the changes in the absorption response are more pronounced than when there were two “holes”. the maximal frequency shift of 8 ghz is achieved when there are six consecutive “holes” forming a 1x6 rectangular “hole” near the center of the structure ((2, 1 – 3) and their pairs). the peak amplitude for that case has the maximal decrease of 0.0221 which is about three times the absolute value fig. 8 absorption response for different positions of the “holes” in the 8 µm thick sample in the case of six “holes” 28 a. kovačević, m. potrebić, d. tošić of the corresponding shift for the two “holes”. in other two cases, the peak amplitude is slightly increased, but significantly less than for the two “holes” in the sample. 4. conclusion we have thoroughly investigated the impact of finite dimensions on the sensing performance of the thz metamaterial absorber based on the typical planar metal-dielectricmetal structure. the results have shown that as the number of unit cells increases, the absorption response approaches the one of an infinite structure which is numerically reflected in the decreased width of the resonant peak and the increased q-factor. the calculated electric field distribution has indicated that the field was mainly localized around the rectangular perforation regardless of the number of unit cells. unlike the infinite structure, the structure with finite number of unit cells has shown the dependency of the field distribution on the position of the unit cell due to the presence of the end effect. the electromagnetic field was primarily confined in the lossy dielectric layer for both the infinite and the finite structure which is typical for metal-dielectric-metal based structures. the behavior of the infinite and finite sensors in the presence of the h9n2 virus sample was examined. first, the sample was evenly distributed across the sensors’ surfaces. the results have shown that the resonant peak of the finite structure experiences greater frequency shifts and saturates more quickly with the increase of the virus layer thickness in comparison with the infinite structure. finally, we investigated the effect of uneven sample distribution on the finite sensor structure by removing the sample from the top of the certain unit cells. the analysis has shown that creating “holes” in the sample does lead to changes in the absorption response such as frequency and amplitude shifts and slight deformations of the resonant peak’s shape. the number of “holes” in the sample is proven to be the parameter that contributes to the mentioned changes the most. acknowledgment: this research was supported in part by the ministry of education, science and technological development of the republic of serbia, project no. 2022/200103, and by the innovation fund of the republic of serbia. the authors would like to acknowledge the contribution of the eu cost action ca18223. references [1] b. x. wang, w. q. huang and l. l. wang, "ultra-narrow terahertz perfect light absorber based on surface lattice resonance of a sandwich resonator for sensing applications", rsc advances, vol. 7, pp. 4295642963, 2017. [2] d. hu, t. meng, h. wang, y. ma and q. zhu, "ultra-narrow-band terahertz perfect metamaterial absorber for refractive index sensing application", results in phys., vol. 19, p. 103567, pp. 1-5, 2020. [3] y. wang, d. zhu, z. cui, l. hou, l. lin, f. qu, x. liu and p. nie, "all-dielectric terahertz plasmonic metamaterial absorbers and high-sensitivity sensing", acs omega, vol. 4, pp. 18645-18652, 2019. [4] f. yan, q. li, h. tian, z. wang and l. li, "ultrahigh q-factor dual-band terahertz perfect absorber with dielectric grating slit waveguide for sensing", j. phys. d: appl. phys., vol. 53, p. 235103, pp. 1-9, 2020. [5] q. xie, g. dong, b. wang and w. huang, "design of quad-band terahertz metamaterial absorber using a perforated rectangular resonator for sensing applications", nanoscale res. lett., vol. 13, p. 137, pp. 18, 2018. тhe impact of finite dimensions on the sensing performance of terahertz metamaterial absorber 29 [6] m. janneh, a. de marcellis, e. palange, a. t. tenggara and d. byun, "design of a metasurface-based dual-band terahertz perfect absorber with very high q-factors for sensing applications", optics commun., vol. 416, pp. 152-159, 2018. [7] w. yin, z. shen, s. li, l. zhang and x. chen, "a three-dimensional dual-band terahertz perfect absorber as a highly sensitive sensor", front. phys., vol. 9, p. 665280, pp. 1-10, 2021. [8] x. hu, g. xu, l. wen, h. wang, y. zhao, y. zhang, d. r. s. cumming and q. chen, "metamaterial absorber integrated microfluidic terahertz sensors", laser photonics rev., vol. 10, pp. 962-969, 2016. [9] l. cong, s. tan, r. yahiaoui, f. yan, w. zhang and r. singh, "experimental demonstration of ultrasensitive sensing with terahertz metamaterial absorbers: a comparison with the metasurfaces", appl. phys. lett., vol. 106, p. 031107, pp. 1-7, 2015. [10] a. kovačević, m. potrebić and d. tošić, "sensitivity analysis of possible thz virus detection using quad-band metamaterial sensor", in proceedings of the ieee 32nd international conference on microelectronics (miel), niš, serbia, 2021, pp 107-110. [11] n. akter, m. m. hasan and n. pala, "a review of thz technologies for rapid sensing and detection of viruses including sars-cov-2", mdpi biosensors, vol. 11, p. 349, pp. 1-21, 2021. [12] n. shen, p. tassin, t. koschny and c. soukoulis, "comparison of goldand graphene-based resonant nano-structures for terahertz metamaterials and an ultra-thin graphene-based modulator", phys. rev. b, vol. 90, no. 11, p. 115437, pp. 1-8, 2014. [13] wipl-d pro 17, 3d electromagnetic solver, wipl-d d.o.o., belgrade, serbia, 2021. available online: http://www.wipl-d.com (accessed on 29 april 2022). [14] g. wang, f. zhu, t. lang, j. liu, z. hong and j. qin, "all-metal terahertz metamaterial biosensor for protein detection", nanoscale res. lett., vol. 16, p. 109, pp. 1-10, 2021 [15] s. j. park, s. h. cha, g. a. shin and y. h. ahn, "sensing viruses using terahertz nano-gap metamaterials", biomed. opt. express, vol. 8, pp. 3551-3558, 2017. [16] b. dadonaite, b. gilbertson, m. l. knight, s. trifković, s. rockman, a. laederach, l. e. brown, e. fodor, d. l. v. bauer, "the structure of the influenza a virus genome", nat. microbiol., vol. 4, no. 11, pp. 1781-1789, 2019. [17] m. amin, o. siddiqui, h. abutarboush, m. farhat and r. ramzan, "a thz graphene metasurface for polarization selective virus sensing", carbon, vol. 176, pp. 580-591, 2021. [18] b. wang, a. sadeqi, r. ma, p. wang, w. tsujita, k. sadamoto, y. sawa, h. r. nejad, s. sonkusale, c. wang et al, "metamaterial absorber for thz polarimetric sensing", in proceedings of the spie, terahertz, rf, millimeter, and submillimeter-wave technology and applications xi, san francisco, ca, usa, 2018, vol. 10531, pp. 1-7. [19] f. lan, f. luo, p. mazumder, z. yang, l. meng, z. bao, j. zhou, y. zhang, s. liang, z. shi et al, "dualband refractometric terahertz biosensing with intense wave-matter-overlap microfluidic channel", biomed. opt. express, vol. 10, pp. 3789-3799, 2019. http://www.wipl-d.com/ instruction facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 61 76 doi: 10.2298/fuee1601061m comparison of classical cic and a new class of stopband-improved cic filters formed by cascading non-identical comb sections  dejan n. milić, vlastimir d. pavlović university of niš, faculty of electronic engineering, niš, serbia abstract. in this paper we propose a new class of selective cic filters in recursive and nonrecursive form. the filters use a modification of cic concept, which is achieved by applying a set of non-identical comb sections in cascade. we illustrate examples of the proposed filter function and calculate integer coefficients of filter impulse response. detailed comparison between the proposed selective filter class and classical cic filters is given. the results show that the stopband selectivity can be improved significantly in comparison with classical cic filters with the same filter complexity. key words: selective cic filter, comb filters, fir filters, recursive form, nonrecursive form, classical cic filter 1. introduction comb-based digital filters have become widely used in multirate systems in the recent years, primarily because of their low complexity and power consumption [1]. classical comb filter functions with finite impulse response and linear phase characteristics hn(z) have all their zeroes on a unit circle, and the total number of zeroes is n. with cascade synthesis of identical comb filter functions, one can generate conventional cic filter functions whose attenuation characteristics are given by: sin ( , , ) sin cic n n n        (1) cic filters have a great importance in telecommunication techniques and especially in multirate processing and sigma-delta modulation [2, 3]. they have two very important characteristics: 1. linear phase response, and 2. multiplierless operation, since they require only delay, addition and subtraction. received september 5, 2014; received in revised form july 24, 2015 corresponding author: dejan n. milić faculty of electrical engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: dejan.milic@elfak.ni.ac.rs) 62 d. n. milić, v. d. pavlović however, classical cic filters also have the following important shortcomings: 1. very high value of filter function normalization constant n  , 2. high ratio of max. and min. values of integer coefficients in impulse response: max inm ( ) { ( )}, max , , 0,1, ( 1) ( ) min{ ( )}, , , cic cic r cic cic r hh n n r r n hh n n r          (2) 3. comparatively low stopband attenuation. for example, by setting n = 9, and using  = 7 cascades, one can obtain stopband attenuation of: |hcic(9, 7, z)| = 90.27 db. stopband attenuation of classical cic filters is equal to the depth of the first sidelobe, and therefore can be estimated as: , 3 ( , ) sin 2 cic s n n n               (3) some of the attempts to sharpen the filter response and improve the stopband selectivity are described in literature, for example [4-12]. table 1 summarizes the values of normalization constants, ratios of maximal and minimal impulse response coefficients, and stopband attenuation for different filter parameters n and . table 1 characteristic values of classical cic filter functions n  normalization constant max/min coefficient ratio stopband attenuation [db] 5 5 3125 381 60.21 8 390625 38165 96.33 11 48828125 4091495 132.45 6 5 7776 780 62.13 8 1679616 135954 99.40 11 362797056 25090131 136.68 7 5 16807 1451 63.26 8 5764801 398567 101.22 11 1977326743 117224317 139.17 in this paper, we propose a new class of fir filter function with all zeroes on the unit circle, that improves on all three issues present in classical cic filters. normalization constants are lower, ratios of hcicmax(n, ) and hcicmin(n, ) are reduced, and stopband attenuation values are improved. 2. the proposed class of cic fir filter functions classical cic filter is described by the normalized transfer function which can be condensed into the recursive form: 1 1 ( ) (1 ) n n z h z n z      , (4) comparison of classical cic and a new class of stopband-improved cic filters 63 where n is an integer parameter, and filter order is equal to (n-1). when better stopband suppression is required, it is a common procedure to cascade multiple filter sections until the requirements are met. by cascading  identical comb/integrator stages, the effective transfer function of the cascaded filter is of the form: ( , ) ( ( ))n nh z h z   . (5) by cascading non-identical sections of classical cic filters, it is possible to obtain filters with different characteristics. some particular cases of new filter classes based on this approach have been considered previously in [7, 8]. the choice of filter sections can in general be arbitrary, and not every combination would yield justifiable results. on the other hand, the classification of general cascaded filter type has not been attempted in the literature, and we choose to present our own filter class which showed good results towards better stopband performance. in this paper, we propose a filter with transfer function 2 2 1 1( , ) ( , ) ( , ) ( , ) ( ) ( )n n n n n nh l z h l z h l z h l z h z h z    , (6) which consists of two cic filters with transfer functions hn-1(z) and hn+1(z), and an l-fold cascade group of three filters with transfer functions hn-2(z), hn(z), and hn+2(z). 2.1 recursive form of the proposed filter class following from (4), the proposed filter function has a recursive form: 1 1 1 1 2 2 1 1 1 1 1 ( , ) ( 1)(1 ) ( 1)(1 ) 1 1 1 ( 2)(1 ) (1 ) ( 2)(1 ) n n n l n n n z z h l z n z n z z z z n z n z n z                                  (7) frequency response characteristic is: ( 1) 2 2 2 1 ( 1) ( 1) ( , ) sin sin 2 2sin ( / 2) ( 1) 1 ( 2) ( 2) sin sin sin 2 2 2( 4) j n k j n k l e n n h l e n n n n n n                                                , (8) where we denote the total number of cic cascades as 23  lk . normalized amplitude response is: 2 3 sin(( 1) 2)sin(( 1) / 2) ( , ) ( 1)( 1)sin 2 sin(( 2) 2)sin( / 2)sin(( 2) 2) ( 2)( 2)sin 2 n l n n a l n n n n n n n n                      , (9) and the magnitude response is obtained when we take absolute value of the amplitude response. as it is obvious from (8), the phase response characteristic is linear and expressed as 64 d. n. milić, v. d. pavlović ( , ) ( 1) / 2 2n l n k k      , where k{0, 1, 2, …}, while the group delay of the proposed filter class is: ( , ) ( 1)(3 / 2 1)n l n l     (10) normalized response characteristics are shown in fig. 1, for l = 2, and 3 < n < 25. amplitude response shows that there are no visible variations in the passband. there is also the smooth transition towards the stopband, which is consistent with general behavior of the classical cic filters. as the filter order increases, the passband decreases as expected. magnitude response shows strong attenuation in the stopband, and this is clearly the consequence of filter zeroes. however, attenuation drops to much lower values between the zeroes, effectively defining the stopband attenuation limit. lines that define the locations of filter zeroes are clearly visible for lower filter orders and the overall effect of cascading non-identical filter sections is in fact in dispersion of the zeroes. this is also obvious in the fig. 2 where we show contour plots of the attenuation for different filter orders versus angular frequency. fig. 2 also compares the magnitude response of the classical cic filters and the proposed filter class, so that the differences can be highlighted. while the classical cic filters have strong attenuation bands, and comparatively low attenuation between them, we see that the proposed filter functions have dispersed high attenuation bands, and significantly better attenuation between those bands. as the filter order increases, after certain point the characteristics begin to look similar, so we expect significant results in stopband attenuation improvement at lower filter orders. figs. 2b and 2d compare the magnitude response spanning lower frequencies close to passband. we can also see that the passband responses of the classical cic and the proposed filters are very similar, and therefore we can assume that the compensation techniques used for classical cic filters [14-16] can also be used here successfully. a) amplitude response b) magnitude response fig. 1 normalized response characteristics of the proposed cic fir filter class for n{4-24}, and l = 2. comparison of classical cic and a new class of stopband-improved cic filters 65 0.0 0.5 1.0 1.5 5 10 15 20 [ ] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 5 10 15 20 [ ] a) classical cic filter with  = 8 b) same as previous, lower part of frequency range 0.0 0.5 1.0 1.5 5 10 15 20 [ ] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 5 10 15 20 [ ] c) proposed cic fir filter with k = 8 d) same as previous, lower part of frequency range 0 50 100 150 200 attenuation [db] fig. 2 contour plots of magnitude response characteristics of classical cic and the proposed cic fir filters for n{4-24}, and total number of cascaded sections  = k = 8. we further investigate the passband and stopband cut-off values of the proposed filter class, and the obtained results are shown in fig. 3. the results are suitable for determining filter parameters n and l when the required values of passband and stopband cut-offs are given. we observe that filter order strongly influences the values of passand stopband cut-offs, while the number of cascades does less so. as a consequence, in many cases requirements can be met using more than a single combination of parameters, which gives a certain degree of freedom in choosing the efficient filter function. 66 d. n. milić, v. d. pavlović 5 10 15 20 25 0.02 0.04 0.06 0.08 0.10 a n g u la r p a s s b a n d c u to ff f re q u e n c y [ ] 1 2 3 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 a n g u la r s to p b a n d c u to ff f r e q u e n c y [ ] 1 2 3 a) passband cut-off values for 0.28 db response variation b) stopband cut-off values for 100 db attenuation fig. 3 passband and stopband cut-off values of the proposed filter class, for n{4-24}, and l{1,2,3}. 2.2 nonrecursive form of the proposed filter class using the non-recursive form [17, 18] of the normalized classical cic filter impulse response: 1 0 1 ( ) n i n i h z z n      , (11) as a building block, we can write directly the non-recursive form of the proposed filter class impulse response: 2 2 2 3 1 1 0 0 0 0 0 ( , ) ( 1) ( 2)l l n l n n n n n i j k l m i j k l m h l z n n n z z z z z                              , (12) classical cic filters have all zeroes (the number of zeroes is equal to filter order, n-1) on the unit circle in the z-plane, and their multiplicity increases linearly with increasing number of cascades. therefore, increased multiplicity of the zeroes is a side-effect of cascading filter element in order to improve the stopband attenuation. in the proposed filter class, there are also multiple filter section, but in contrast with classical cic, the sections are not of the same order. this diversity allows wide spread of zeroes, which are also distributed on the unit circle. by distributing zeroes more evenly for the proposed filter class, we hope to get significantly better stopband characteristics while retaining the other desirable characteristics of the cic filters. an illustrative example is given in fig 4, where locations and multiplicities of zeroes are compared for the two types of filters with the same total number of cascades and the same group delay. comparison of classical cic and a new class of stopband-improved cic filters 67 1 1 2 3 6 multipli cities 8 1 a) classical cic filter b) proposed filter fig. 4 locations and multiplicities of filter function zeros in z-plane for n = 8, and  = k = 8 cascades. when all products in (12) are taken into account, the impulse response is written simply as: (3 2)( 1) , 0 ( , ) l n k n n l k k h l z c a z       , (13) where 2 2 , ( 1) ( 2)l l n lc n n n   is the normalization constant. we can observe that the result can be interpreted as a scalar product of the two vectors: , , ,( , ) t n n l n l n lh l z c a z , (14) where , 0 1 (3 2)( 1)[ , , , ]n l l na a a  a , 1 2 (3 2)( 1) , [1, , , ]l n n l z z z    z , and symbol t denotes the vector transpose. coefficients ak are computed easily for the given filter parameters n and l, and although general symbolic formula for the ak may exist, we have not pursued its derivation. instead, we give the coefficients vectors values for filters with n{7, 8}, and l{1,2}: for sixth order filter (n = 7), with l = 1, we have the following 31 coefficients: a7,1 = [1, 5, 15, 35, 70, 125, 204, 309, 439, 589, 750, 910, 1055, 1171, 1246, 1272, 1246, 1171, 1055, 910, 750, 589, 439, 309, 204, 125, 70, 35, 15, 5, 1], and with l = 2, we have the following 49 coefficients: a7,2 = [1, 8, 36, 120, 330, 790, 1699, 3350, 6142, 10578, 17243, 26758, 39710, 56562, 77553, 102602, 131233, 162538, 195191, 227520, 257635, 283600, 303628, 316274, 320598, 316274, 303628, 283600, 257635, 227520, 195191, 162538, 131233, 102602, 77553, 56562, 39710, 26758, 17243, 10578, 6142, 3350, 1699, 790, 330, 120, 36, 8, 1] coefficients of seventh order filter with l = 1, are: a8,1 = [1, 5, 15, 35, 70, 126, 209, 324, 474, 659, 875, 1114, 1364, 1610, 1835, 2022, 2156, 2226, 2226, 2156, 2022, 1835, 1610, 1364, 1114, 875, 659, 474, 324, 209, 126, 70, 35, 15, 5, 1], 68 d. n. milić, v. d. pavlović while the same order filter with l = 2 has the following 57 coefficients: a8,2 = [1, 8, 36, 120, 330, 792, 1714, 3415, 6353, 11147, 18586, 29618, 45313, 66796, 95150, 131293, 175839, 228957, 290246, 358645, 432396, 509073, 585684, 658844, 725007, 780736, 822984, 849356, 858322, 849356, 822984, 780736, 725007, 658844, 585684, 509073, 432396, 358645, 290246, 228957, 175839, 131293, 95150, 66796, 45313, 29618, 18586, 11147, 6353, 3415, 1714, 792, 330, 120, 36, 8, 1] in order to compare the filter responses, we observe the classical cic filter with same order and group delay has the following impulse response 3 2 3 2 1 3 2 0 1 ( , ) l l n k n l k h z z n                 (15) using the multinomial theorem, previous equation can be written in its expanded form: 1 0 3 2 0 1 1 3 2 0 1 1 1 ! ( , ) ! ! ! n t t l n t k n l k k k l n l h z z k k kn                 , (16) and finally in the form analogue to (13): (3 2)( 1) 3 2 0 1 ( , ) l n k n kl k h z b z n         (17) in order to further compare the coefficients of classical cic and proposed filters, we have computed the coefficient vectors for both filters, using the same filter order and group delay. relative difference of the coefficients is shown in fig. 5, with classical cic filter taken as reference, i.e. we define relative difference as (ak bk)/bk. since the relative difference is always negative, corresponding coefficients of the proposed filter class are always less or equal to those of the classical cic filters, and this is especially true for the largest coefficients. 0 = 3 = 2 = 1 4020 60 25 20 15 10 5 0 coefficient order, r e la ti v e d if fe re n c e [ % ] = 8 = 7 fig. 5 relative difference of the impulse response coefficients of the proposed filter class compared to corresponding coefficients of the classical cic filters. comparison of classical cic and a new class of stopband-improved cic filters 69 normalization constants and max/min coefficient ratios of the proposed filter class are compared to appropriate values of classical cic filters, and the results are listed in table 2. relevant values are about 10% to 45% lower, relative to classical cic. table 2 characteristic values of the proposed filters impulse responses, and comparison to corresponding values for classical cic filters n l  normalization constant relative to classical cic [%] max/min coefficient ratio relative to classical cic [%] 5 1 5 2520 -19.35 292 -23.36 2 8 264600 -32.26 24544 -35.69 3 11 27783000 -43.10 2209862 -45.99 6 1 5 6720 -13.58 651 -16.54 2 8 1290240 -23.18 100716 -25.92 3 11 247726080 -31.72 16524804 -34.14 7 1 5 15120 -10.04 1272 -12.34 2 8 4762800 -17.38 320598 -19.56 3 11 1500282000 -24.13 86589572 -26.13 3. comparison of stopband characteristics as mentioned previously, the most significant effect of zeroes dispersion in the proposed filter class is expected to be the stopband attenuation improvement. to study and illustrate the effect, we show detailed analysis of numerical results obtained for even and odd filter orders n{7, 8}, and different number of cascaded sections, corresponding to l{1, 2, 3}. in fig. 6 we show filter attenuation in dbs, for the angular frequency span of 0    . it is immediately obvious that the proposed filter outperforms classical cic filters in the stopband. at the same time, passband characteristics are closely matched, potentially allowing the use of compensators designed for classical cic filters. as the number of cascades increases, so does the benefit of attenuation improvement. this is in agreement with our initial assumption that the zeroes multiplicity of classical cic filters can be traded for stopband performance. numerical values of stopband attenuation, as well as stopband cut-off values are shown in the fig. 7, which shows zoomed areas of interest from the fig. 6. it is evident that the stopband improvement can be significant, ranging from about 19 db for l = 1, 26 db for l = 2, up to 32 db for l = 3. 70 d. n. milić, v. d. pavlović 0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 angular frequency [ ] a tt e n u a ti o n [ d b ] a) number of cascades is  = 5 (corresponding to l = 1 for the proposed filter) 0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 angular frequency [ ] a tt e n u a ti o n [ d b ] b) number of cascades is  = 8 (corresponding to l = 2 for the proposed filter) 0 0.5 1.0 1.5 2.0 2.5 3.0 0 150 200 250 angular frequency [ ] a tt e n u a ti o n [ d b ] c) number of cascades is  = 11 (corresponding to l = 3 for the proposed filter) fig. 6 comparison of normalized magnitude response characteristics in db for classical cic filter with n = 7 (dashed lines), and the proposed cic fir filter functions with n = 7 (solid lines). comparison of classical cic and a new class of stopband-improved cic filters 71 82.23 db 63.26 db 0.76283 0.72214 0.6 0.8 1.0 1.2 1.4 60 70 80 90 angular frequency , [ ] a tt e n u a ti o n [ d b ] a) number of cascades is  = 5 (corresponding to l = 1 for the proposed filter) 127.09 db 101.22 db 0.76841 0.72214 0.6 0.8 1.0 1.2 1.4 90 100 110 120 130 140 angular frequency , [ ] a tt e n u a ti o n [ d b ] b) number of cascades is  = 8 (corresponding to l = 2 for the proposed filter) 171.10 db 139.17 db 0.77147 0.72214 0.6 0.8 1.0 1.2 1.4 130 140 150 160 170 180 190 angular frequency , [ ] a tt e n u a ti o n [ d b ] c) number of cascades is  = 11 (corresponding to l = 3 for the proposed filter) fig. 7 details of comparison shown in fig.6, with enlarged sections of interest and specific values shown. characteristics of the classical cic filters are shown using dashed lines, and those of the proposed filter are in solid lines. 72 d. n. milić, v. d. pavlović in fig. 8 we show an example of filter attenuation for odd filter order: n 1 = 7 (n = 8). the figure looks very similar to previous example shown in fig. 6, but there are a few points worth taking notice. firstly, there are no fundamental differences visible between even and odd filter orders. secondly, attenuation improvement is not linear, but depends on complex interplay of zeroes locations and multiplicities. actually, in fig. 8.a we have a slightly lower improvement than in fig. 6.a. 0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 angular frequency [ ] a tt e n u a ti o n [ d b ] a) number of cascades is  = 5 (corresponding to l = 1 for the proposed filter) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 angular frequency [ ] a tt e n u a ti o n [ d b ] b) number of cascades is  = 8 (corresponding to l = 2 for the proposed filter) 0 0.5 1.0 1.5 2.0 2.5 3.0 0 150 200 250 angular frequency [ ] a tt e n u a ti o n [ d b ] c) number of cascades is  = 11 (corresponding to l = 3 for the proposed filter) fig. 8 comparison of normalized magnitude response characteristics in db for classical cic filter with n = 8 (dashed lines), and the proposed cic fir filter functions with n = 8 (solid lines). comparison of classical cic and a new class of stopband-improved cic filters 73 82.59 db 63.99 db 0.66501 0.63347 0.6 0.8 1.0 1.2 60 70 80 90 angular frequency , [ ] a tt e n u a ti o n [ d b ] a) number of cascades is  = 5 (corresponding to l = 1 for the proposed filter) 134.66 db 102.38 db 0.68294 0.63347 0.6 0.8 1.0 1.2 90 100 110 120 130 140 150 angular frequency , [ ] a tt e n u a ti o n [ d b ] b) number of cascades is  = 8 (corresponding to l = 2 for the proposed filter) 182.95 db 140.77 db 0.68706 0.63347 0.6 0.8 1.0 1.2 140 160 180 200 angular frequency , [ ] a tt e n u a ti o n [ d b ] c) number of cascades is  = 11 (corresponding to l = 3 for the proposed filter) fig. 9 details of comparison shown in fig.8, with enlarged sections of interest and specific values shown. characteristics of the classical cic filters are shown using dashed lines, and those of the proposed filter are in solid lines. 74 d. n. milić, v. d. pavlović 5 10 15 20 0 10 20 30 40 s to p b a n d a tt e n u ati o n im p ro v e m e n t [d b ] 3 2 1 fig. 10 stopband attenuation improvement versus parameter n. for higher number of cascades, the attenuation valleys are more uniformly distributed in terms of their attenuation values, and this is an indication that the filter has finer balance and better stopband characteristics. numerical values of stopband attenuation, as well as stopband cut-off values are shown in the fig. 9, which shows zoomed areas of interest from the fig. 8. the stopband improvement here ranges again from about 19 db for l = 1, over 32 db for l = 2, up to 42 db for l = 3. as we have noticed, because of the complex nature of interplay between the zeroes, it is hard to predict the exact values of stopband attenuation improvement, and these can be efficiently calculated and tabulated only after the actual characteristics comparison. therefore, we have performed detailed calculations for different filter orders and number of cascades, and we summarize the results in fig. 10. the results indicate that the best results in improving attenuation in the stopband can be obtained when n = 8, for l = 2 and l = 3. when l = 1, most improvement is obtained for n = 7. as the filter order increases beyond its optimal value, attenuation improvement becomes consistently lower. in order to compare the filter function to a similar one presented in [7], we have calculated the stopband attenuation improvement in dbs and normalized it by the total group delay (10), therefore showing how efficient is the filter function in improving the stopband attenuation with increasing number of delay elements. the results shown in fig. 11 indicate that the proposed filter function is more efficient in this regard than the one presented in [7]. we note that l = 2 from [7] corresponds to the same delays as for l = 4 in this paper. 6 8 10 12 14 16 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 proposed filter function ref. [7] s to p b a n d i m p ro v e m e n t p e r g ro u p d e la y u n it [ d b ] = 1 2 3 fig. 11 stopband attenuation improvement normalized by group delay. comparison of classical cic and a new class of stopband-improved cic filters 75 4. conclusion this paper describes a new class of selective cic filter functions in recursive and nonrecursive form. we have illustrated examples of the proposed filter function class, and shown details of the response characteristics for wide range of filter orders. we have highlighted the common points and differences in relation to classical cic filters. results show that normalization constant, and span of integer filter coefficients are lower than that of corresponding classical cic filters, while the stopband characteristics are significantly improved. detailed comparison of response characteristics with classical cic filters is given. the results indicate that the proposed class of cic filter functions can have significant stopband attenuation improvement for the same digital filter complexity. further research will be directed towards passband droop compensation while keeping the proposed technique for stopband improvement. acknowledgement: this work is supported in part by the ministry of education, science, and technology development of the republic of serbia, under grants iii44006 and tr32023. references [1] e. hogenauer, "an economical class of digital filters for decimation and interpolation," ieee trans. acoustics, speech and signal processing, vol. 29, no. 2, pp. 155-162, april 1981. [2] m. laddomada, “generalized comb decimation filters for  a/d converters: analysis and design”, ieee trans. on circuits and systems-i, vol. 54, no. 5, pp. 994-1005, may 2007. [3] m. laddomada, “comb-based decimation filters for  a/d converters: novel schemes and comparisons”, ieee trans. on signal processing, vol. 55, no. 5, pp. 1769-1779, may 2007. [4] g. jovanović doleček, s. k. mitra, “a new two-stage sharpened comb decimator”, ieee trans. circuits syst. i: regular papers, vol. 52, no. 7, pp. 1414-1420, july 2007. [5] m. nikolić, m. lutovac, “sharpening of the multistage modified comb filters”, serbian journal of electrical engineering, vol. 8, no. 3, pp. 281-291, 2011. [6] j.o. coleman, “chebyshev stopbands for cic decimation filters and cic-implemented array tapers in 1d and 2d”, ieee trans. circuits syst. i, vol. 59, no. 12, pp. 2956-2968, december 2012. [7] d. milić, v. pavlović, “a new class of low complexity low-pass multiplierless linear-phase special cic fir filters”, ieee signal processing letters, vol. 21, no. 12, pp. 1511-1515, dec. 2014. [8] v. pavlović, d. milić, b. stošić, „characteristics of novel designed class of cic fir filter functions over classical cic filters“, icetran 2014, proceedings of the 1st international conference on electrical, electronic and computing engineering, vrnjačka banja, serbia, june 2-5, 2014. [9] m. lutovac, v. pavlovic, m. lutovac, "efficient recursive implementation of multiplierless fir filters", in proceedings of the 2nd mediterranean conference on embedded computing (meco), 15-20 june 2013, pp. 128-131. [10] v. pavlovic, m. lutovac, m. lutovac, "efficient implementation of multiplierless recursive lowpass fir filters using computer algebra system", in proceedings of the 11th international conference on telecommunication in modern satellite, cable and broadcasting services (telsiks), 16-19 oct. 2013, vol. 1, pp. 65-68. [11] m. laddomada, d. e troncoso, g. j. doleček, “design of multiplierless decimation filters using an extended search of cyclotomic polynomials”, ieee trans. circuits syst. ii, vol. 58, no. 2, pp. 115-119, feb. 2011. [12] w. a. abu-al-saud, g. l. stuber, “modified cic filter for sample rate conversion in software radio systems” ieee signal processing letters, vol. 10, no. 5, pp. 152-154, may 2003. [13] g. j. doleček, f. harris, “design of wideband cic compensator filter for a digital if receiver”, digital signal processing, vol. 19, pp. 827-837, september 2009. 76 d. n. milić, v. d. pavlović [14] a. fernandez-vazquez, g. j. doleček, “maximally flat cic compensation filter: design and multiplierless implementation”, ieee trans. circuits syst. ii, vol. 59, no. 2, pp. 113–117, feb. 2012. [15] g. j. doleček, a. fernandez-vazquez, “trigonometrical approach to design a simple wideband comb compensator”, int. j. electron. commun. (aeü), vol. 68, no. 5, pp. 437-441, may 2014. [16] g. j. doleček, a. fernandez-vazquez, “novel droop-compensated comb decimation filter with improved alias rejections”, int. j. electron. commun. (aeü), vol. 67, no. 5, pp. 387-396, may 2013. [17] j. le bihan, “impulse response and generating functions of sincn fir filters”, in proceedings of the sixth international conference on digital telecommunications icdt 2011, 2011, pp. 25-29. [18] s.c. dutta roy, “impulse response of sincn fir filters”, ieee trans. circuits syst. ii, vol. 53, no. 3, pp. 217-219, march 2006. [19] b. stošić, d. milić, v. pavlović, “new cic filter architecture: design, parametric analysis and some comparisons”, iete journal of research, vol. 61, no. 3, pp. 244-250, mar. 2015. facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. 37-51 https://doi.org/10.2298/fuee2101037b © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper integrated green submersible pumping system for future generation bidrohi bhattacharjee1*, pradip kumar sadhu1, ankur ganguly2, ashok kumar naskar2 1department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand, india 2department of electrical engineering, techno international batanagar, kolkata, india abstract. in the system solar power has been used for cultivation. solar photovoltaic cells convert solar energy into electricity through solar photovoltaic (spv) effect. generated dc voltage then converted in to ac voltage by pump controller, this ac voltage is used as the input of variable frequency drive (vfd). the vfd acts as a motor controller that controls the submersible pump motor by varying the frequency and voltage of its input power supply. the vfd is associated with pump controller. regulated three phase ac voltage is the output of the pump controller which is directly connected with submersible pump. the water thus drawn from bore wells by a solar water pump is pumped to supply for irrigation purpose as required. this system is full off-grid interfaced system appropriate for the village areas. the main goal of this system is to use solar energy at a minimum running cost. the solar powered project is completely eco friendly and the plant is relatively clean with small maintenance. this project helps to reduce the cost of electricity, as well as minimize the overall agricultural cost. key words: variable frequency drives (vfd), submersible pump, solar panel, irrigation, pump controller received may 4, 2020; received in revised form october 23, 2020 corresponding author: bidrohi bhattacharjee research scholar of department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand-826004, india e-mail: onlybidrohi@gmail.com 38 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar 1. introduction water is the basic human necessity but a large nepalese population is depleted of access to hygienic, safe and adequate water. nepal is a landlocked country and most of the villages in nepal have to rely on small brooks flowing from the mountains and have to travel hours to get safe water. still, safe and unpolluted water is unavailable. one of the main reasons for this is due to the fact that the water level is deteriorating from the normal ground level and from the surface naturally and by anthropogenic deposits. this gives rise to many difficulties for the rural regions on getting sufficient collected water from normal tube wells and by using pumps by renewable energy source[1]-[4]. normally, , to fix such problems submersible pumps are used. these pumps are the best for collecting water in those places with very low water levels, still a strong challenging point to sustain is the unavailability of electricity. the common issue in those rural regions of nepal communities is suffering each day from power cut and driving the submersible pumps have become their nightmare which is vividly affecting their irrigation process. the solar photovoltaic system (spv) has been implemented in order to overcome electricity issues [5]-[8]. this system is implemented using renewable sources of energy and has become an almost successful project which is meeting the need for water without any obstacle to the villagers, using completely green energy [9]-[12]. water head ranges 45 to 50 meters with water discharge 36,000 liters per hours. now, this paper discusses the execution and implementation of an integrated solar photovoltaic system, generation of electricity for running submersible pump with minimum running cost [10]-[18]. spv contains few photovoltaic cells in series-parallel combination for achieving the required voltage. the solar photovoltaic cells arranged in series-parallel in panel absorb the solar energy [19]-[22] and process it into electrical energy as dc voltage. the dc voltage however does not remain steady because of the change the intensity of sunlight through day time. pump controller maintains constant voltage during operating time to provide water for farming work [23]-[25]. 2. pump installation and operation the solar submersible pump installation has been performed by these steps: initially try to survey the purpose and nature of the irrigation requirement of the specific village as well as the climate and nature of soil of this particular area. after that, hydraulic analysis of the pumping system is required to calculate the depth of underground water level. wind flow and wind pressure also play a vital role, therefore wind flow calculation must be required. in this project the solar module shielded the wind flow up to 150 km/h [26]. the reason for the sailing effect is the strong wind flow up to 150km/h along the ground level which is extremely detrimental to photovoltaic installations. therefore, during the installation, the behavior of the structure and pv module at 140km/h to 150km/h wind pressure was observed through wind tunnel test, and the solar panels passed the test successfully. as the structures were laid by pvh (pvhardware), they will not be affected by bad weather. the working temperature of the solar module is -20°c to 55°c with ip65 protection. determination of the peak photovoltaic power is required to drive 7.5 hp submersible pumps. the size of the suitable pv panel is set to get the required output power. during pv array layout, minimum impact of shadow effect must be considered for optimum and uninterrupted electrical output. shadows occur because of permanent structures, trees, or integrated green submersible pumping system for future generation 39 other types of civil constructions. inter row spacing of solar module is also the cause of shadow effect. to avoid shadow effect due to row spacing the following methodology: row spacing = height of solar module × 𝐶𝑂𝑆 𝑜𝑓 𝑎𝑧𝑖𝑚𝑢𝑡ℎ 𝑎𝑛𝑔𝑙𝑒 tan 𝑜𝑓 𝑎𝑙𝑡𝑖𝑡𝑢𝑑𝑒 𝑎𝑛𝑔𝑙𝑒 (1) in this project row spacing = 4meters × 𝐶𝑜𝑠 85° 𝑇𝑎𝑛 15° = 4meters × 0.087 0.26 = 1.34 m (1.5 m approx.) with the help of this method, electric power has been generated through solar panel. the photovoltaic arrays are made up of a combination of solar panels which convert sunlight into electricity, used for driving the motor and submersible pump set. the solar energy is supplied to the electrical motor to run the pumping system through cables. the pumping system draws water from the bore well. by the rotation of the shaft of the motor which is attached to the pump, the pump starts to collect the underground water and supply the fields. this system demands a shadow-free area for installation of the solar panel. 2.1. performance ratio and plant yield calculation total generated energy by a solar energy operated plant per annum to meets the consumers demand is called plant yield. performance ratio of a plant (pr) = (1−α) × (1−t) × (1−s) × (1−v) × ήinverter (2) plant yiled = psun × prated × pr × 365 (3) where psun is the average solar irradiation per day, ( kwh/m2/day) is the solar radiation received by a surface at the panel installation area with that specific time. prated is the amount of dc power production under standard test conditions of the particular solar module. α is the manufacturer’s tolerance that means the permissible limits of variation in the physical dimensions of component or object of the pump. the value of α is 0.96 for 17 stages submersible pump [27]. t is the % of losses of efficiency due to diverse factors like ohmic losses, pv losses due to the temperature & irradiance. s denotes solar module soiling loss. significant factors impacting the rate of soiling are wind velocity of the atmosphere angle and direction of the panel, humidity, fog, dew, geographical location of the pane. the losses generated due to soiling vary from 1.5% to 6.2%, solely depending on the location of the pv plant. v is the power cable’s impedance loss. the efficiency of inverter is denoted by ήinverter. 2.2. methodology of total dynamic head calculation factors that have helped with the model improvement of total dynamic head (tdh) were recognized. the factors are -vertical rise, pumping level, static water level, drawn down, dynamic water level, pump depth, well depth, friction losses due to (insert coupling), threaded adapter (plastic to thread), standard tee (flow-through run), standard tee (flowthrough side), gate valve and swing check valve. the schematic representation of the research is shown in fig.1. 40 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar fig. 1 schematic diagram of total dynamic head of a submersible pump frictional loss calculation is shown from the data obtained from table 1. table 1 practical data related with submersible pump installation parameters acronyms value (m) friction loss pumping level total length of pipe fl pl lt 0.55m 158.50m 281.03m vertical rise fittings equivalent of pipe number of same fittings vr fe nf 61.11m 0.91m 4 fittings frictional loss in meters fl = [lt + ∑( nf × fe)] × fh × 30.48-1 (4) in this project the value of vertical rise and pump level are predetermined, so the modified equation of total dynamic head can be shown as: tdh= pl + vr [lt + ∑( nf × fe)] × fh × 30.48-1 (5) total dynamic head (tdh) = pl + vr + fl (6) application of equation (4) by substituting the values in table 1, gave a value of 737.31 feet (224.88 m) tdh= pl + vr [lt + ∑( nf × fe)] × fh × 30.48-1 = 224.88 m for calculating the pump capacity following factors has been considered in the model village of nepal with population of 2347. total water demand = 70 klit average solar energy per day = 6 hrs. average water required per hour = 12 klit water required per minute 12000 /60 = 200 lit/minute, power rating in watt = hp x 746 watt = 7.5× 746 = 5595 watt. (7) integrated green submersible pumping system for future generation 41 2.3. pump capacity design daily water demand = 70 lpcd 7.5 hp pump discharge = 600 lpm for 48 m head. total water discharge in an hour 600 × 60 = 36,000 lit. in 6 hrs.= 36,000 × 6 = 216, 000 lit. (8) 2.4. pump specification power rating of pump = 7.5 hp or 5.59 kw. water discharge = 600 lpm water head = 48m voltage: 280440v. stages: 19 housing material: stainless steel pump bush material: gun metal. insulation class: b bore size: 4 inch or 101.6 mm coating: ced (cathodic electro-deposition) protection class: ip68. 2.5. panel design 1m length × 2m width panel = 0.15 kw total wattage of 7 number of panel= 1kw for 7.5 hp load total number of 150 watt panel required = (7.5 ×746) ÷ 150= 38 nos. (9) area required for panel fittings = 1 ×2 × 38 = 76 sqm (10) add 100% more space for gap between the panel and area around it. so the total working area = 76 sqm × 2 = 152 sqm. (11) 3. technical specifications of solar water pump controller system in this project, 3 phase solar pump controller are used as an electronic device which is the combination of inverter, maximum power point tracking (mppt) and variable frequency drive (vfd). the maximum output pressure of the pump controller is greater than 0.55 bar. the system works at its optimum condition throughout the day by any intensity of sunlight. the starting current of induction motor is very high and non linear in nature than the running current of the motor which is almost regulated. the vfd in controller eliminates the high starting current of the induction motor. because of the smooth start using vfd, the starting method of the motor is very smooth. for 7.5 hp submersible pumps the ip rating of vfd is ip 65 with enclosure for endure severe environments. variable frequency drive shall be suitable for operating at voltage range of 415v with ±10% tolerance and the input supply frequency of 50 hz with ±5% tolerance. the frequency regulation shall be ±0.1% of rated maximum frequency under steady state and ±5% during transient condition. the output frequency variation of drives shall be 2.5 hz to 50 hz. maximum overload range of vfd is 150% of rated current for 60s and can work properly under the ambient temperature range -10 to +40°c with 95% of maximum humidity. 42 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar 4. pump efficiency calculation flow rate (q) = 120 m3/s water head (h) = 48m input power to pump = 21kw hydraulic kw is given by: q in m3 sec⁄ × total head in m × density in kg m3⁄ × g in m2/s 1000 = ( 120 3600 )×48×1000×9.81 1000 = 15.69 kw (12) pump efficiency =hydraulic kw/ input power to the pump = (15.69÷21) ×100= 74.71% this efficiency is sufficient for farming on that area. the submersible pump with diameter of the outlet is 4 inches and water discharge 600 lpm. the irrigation problem in this area is resolved with the submersible pump that runs for an average of 6 hours per day. the polluted pv cells power reduced to about 12% while the naturally cleaned cell lost about 8% compared to the clean cell [28]. table 2 shows a series of statistical data obtained from the agricultural field prevailed by direct measurements. this table also indicates how the pump efficiency varies with the water head and also the maximum efficiency for a particular water level. table 2 optimum efficiency water head (m) pump efficiency (%) 25 38 30 47 35 62 40 80 45 75 50 78 55 75 60 70 65 65 the relationship of efficiency with the inlet width of the pump diffuser is clearly stated in fig. 2. this figure also shows the locations of optimum operating point efficiency and the forecast of maximum efficiency. fig. 2 pump maximum efficiency curve with maximum operating points integrated green submersible pumping system for future generation 43 table 3 the optimum flow rate with different inlet and corresponding efficiency diffuser inlet width (b3) in mm single-stage head (h) in m efficiency (%) 40 16 77.4 45 17.01 81.0 50 17.20 83.7 55 13.87 75.9 table 3 indicates the results of various experiments revealed that the efficiency of a submersible pump that varies with different parameters like width of the diffuser inlet, water flow and the water head. the diffuser inlet width is measured by the inside caliper and measuring tape. inside caliper consists of measuring two adjustable jaws or legs for measuring the dimension of diffuser inlet width. the right side of the caliper has an adjustable screw and nut. the method of measuring diffuser inlet width with inside caliper is that first the jaws of the caliper were adjusted with the diffuser inlet width with the help of adjustable screw and nut of the caliper. then the gap in the lower part of the jaws is measured with either a scale or a measuring tape, that reading is the diffuser inlet width. 5. pump control technology the frequency regulation system is very effective for the flow of water at a certain pressure during the operation of the pump, which is placed as vfd of the project. at the same time this technology prevents water wastage, as well as power consumption control. the operation of vfd depends on the variation in the input voltage and frequency of the pump motor. a variable frequency drive (vfd) is a kind of motor controller that runs an electric motor by altering the frequency and voltage of its power supply. the vfd also has the potential to control ramp-up and ramp-down of the motor, during the start or stop, sequentially. a variable frequency drive can modify the power provided to meet the energy requirement of the driven equipment, and this is how it conserves energy or optimizes energy consumption. vfd for ac motors has been the reform that brought the application of ac pump motors back into influence. the ac-induction motor can have its speed modified by changing the frequency of the voltage used to power it. these indicate that, if the voltage applied to an ac motor is 50 hz (used in countries like india), this motor can operate at its rated speed. a pump controller will manage the regulated voltage, so no battery is required in this project for backup protection. a voltage regulator is employed to supply continuous power to the microcontroller. the microcontroller will regulate the switching of the pump which will further provide water to the crops as per their necessities. the water level in the overhead water tank is controlled by a water level controller which will run the pump executing it to supply water from the water reservoir. ac pumps are utilized in this system as they are cost-effective and efficient. the pumps require ac supply, whereas the solar panels provide dc power. therefore, an inverter is used to alter this dc supply to ac supply. 44 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar fig. 3 shows the simulated waveform has been done with the help of matlab/simulink software. this software has been used to make this project more acceptable. in fig. 4 the vertical axis indicates the flow rate in m3/s and in lpm with separate diagram and horizontal axis indicates the time. the relationship between the flow rate and time is shown by the simulation. pump flow rate is in both cubic meter per sec and liter per minute. both curves show that the pump starts to deliver the water after almost 0.12 sec, which is too fast. the pump flow rate is 5.35 × 10−3 [m3/sec] and 320 [lpm], respectively, which then increases to 5.85 × 10−3 [m3/sec] and 350 [lpm], which is slightly higher than the actual calculated value. fig. 3 simulated waveform of the output voltage without pump controller fig. 4 pump flow rate in [m3/s] and [lpm] against time the bright sunlight provides illuminance of 98000 lux on a perpendicular time when the voltage directly coming from the solar array without the influence the pump controllers is fluctuating in nature. the generated voltage (dc) is unregulated and deepens upon the intensity of light. so, the output voltage is not constant throughout the day. this means that as the intensity of light decreases, the amount of voltage generated also decreases. the value of the voltage is almost constant as the intensity of light changes by using solar pump controller. when the sunshine varies during the solar hours or day time, the power input to integrated green submersible pumping system for future generation 45 the controller also varies and the variable frequency drive (vfd) generates variable ratio to control the input voltage of the pump and the speed of the motor. thus pump controller always maintain constant speed. but after using the submersible pump controller the output voltage of the controller is almost constant. the voltage vector of the inverter is supplied to pump motor and it holds a steady ratio of the voltage to frequency (v/hz). it obtains feedback data from the driven motor and corrects the output voltage or frequency to the preferable values. the control system is entirely based on svpwm (space vector modulated pwm) and soft computing based algorithm. this project is solely an integrated system and not design-based work. the solar inverter with mppt vf drive will give the maximum torque even at minimum sunlight. no battery is required in this project. the panel is directly connected to the pump controller and the output of the controller is connected to the submersible pump motor. the dsp will track a particular point at which the maximum power can be extracted from the solar module or array by changing the pwm technique with modulation frequency so that the pump motor will always run maximum power extracting from the panel and with a steady torque for a large range of intensity of sunlight throughout the solar hours. thus, maximum power can be obtained from the panel by altering the pwm and modulation frequency so that the motor always runs by deriving most of the power from the panel and at a steady torque for the ample range of intensity of sunlight from morning till evening. this method provides 35% more energy, and therefore gets 35% more pumping water. this comparative excess water has greatly improved the agriculture on that area. this project was created to solve the agricultural obstacle for a particular area. fig. 5 shows the output power or shaft power of the pump [kw] against time [sec]. the shaft power of the pump gives the same results as the motor speed, as shown in the full load shaft power is 5.5 kw. fig. 5 shaft power (kw) of pump vs time (sec) fig. 6 single line block diagram of submersible pump operation. 46 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar fig. 6 shows the single line diagram of the control circuit of the submersible pump. when sunlight falls on solar array, voltage is generated in photovoltaic manner and it is unregulated dc voltage. this voltage is connected to the appropriate 3 phase ac voltage of the pump motor through the pump controller. the output terminals of the pump controller are directly connected with the pump motor. the pump controller provides the rated power with specified voltage to motor. the pump motor is fully submerged in underground water. the motor is hermetically sealed and close-coupled to the body of the pump. the submersible pump pushes water to the upper surface of the ground by converting the rotating mechanical energy of the motor into kinetic energy. this can be achieved by the water being pulled into the pump, initially in the intake, where the rotation of the impeller pushes the water through the diffuser. from the diffuser it goes to the upper ground surface. after that the submersible pump is driven by motor and the water moves to the upper surface of the soil at high pressure through certain pipelines. latter the water is used for farming. table 4 test result panel voltage dc (volt) load voltage (volts) load (submersible pump) kw load current (amp) 24 volt 414 volt 5.595 13 amp real time experimental results are directly available from table 4. the results were obtained by connecting the metering deviances directly to the pump circuit. the experimental result of this project shows that the theoretical value of the efficiency is 74.74% s as almost equal to the efficiency which is calculated by the practical data. input electrical power = √3 ×vl× il ×cos ∅ (13) = √3 × 414 × 13 × 0.8 kw = 7457.5 w output electrical power = 5595 w (7.5hp) practical efficiency = 5595 7457.5 × 100 = 75% pump performance curve the characteristic curve of submersible pump is the relation between the flow rate produced vs total head. the pump performance curve, basically a performance data, helps to choose the proper rating of the pump for a particular project. pump performance curve in fig. 7, indicates the relation between total head (m) and the water flow rate (m3/s). the flow rate decreases with increasing the total head of the pump, so that the curve is drooping in nature that means if the total head increased then the flow rate of water will be decrease and the maximum water flow available with minimum water head. fig. 7 pump performance curve integrated green submersible pumping system for future generation 47 determining the optimum operating point the best operating point of a submersible pump is typically analyzed by the fluid flow and the total head at maximum working efficiency. the optimum operating point of the submersible pump is present in case of impeller type where q is the pump flow, n is the pump speed in rpm, η is the hydraulic efficiency, ψ is the impeller outlet exclusion coefficient, d is the impeller outlet diameter, p is the theoretical head correction factor, β is the impeller blade outlet angle, the characteristic equation of the impeller can be derived from the basic equation of submersible pump as follows: pump flow q = 50gm/m impeller outlet diameter d = 150mm theoretical head correction factor = p = 1.42 impeller outlet exclusion ψ = 26mm impeller blade outlet angle cot β = cot 65° hydraulic efficiency η = 81.4% pump speed in rpm (n) = 3200 rpm h =( ηh (1+p)g ) ×( 𝜋𝐷𝑁 60 ) 2 − ( ηh (1+p)g × 𝑁𝑐𝑜𝑡 𝐶𝑜𝑡𝛽𝑁 60𝑐𝑜𝑡𝛽ψη ) × 𝑄 (14) h =( 81.4×h (1+p)g ) ×( 𝜋𝐷𝑁 60 ) 2 − ( ηh (1+p)g × 𝑁𝑐𝑜𝑡 𝐶𝑜𝑡𝛽𝑁 60𝑐𝑜𝑡𝛽ψη ) × 𝑄 water flow measurement was done with the help of magnetic flow meter; whereas the total head of the water was measured manually with the help of measuring tape. fig. 8 and fig. 9 show the decreasing and increasing rate of water head respectively where horizontal axis represents total head and vertical axis indicates water flow rate. fig. 8 total water head vs flow rate curve (decreasing mode) fig. 9 total water head vs flow rate curve (increasing mode) 48 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar fig. 10 to fig. 14 show the different parts of the solar submersible pump unit and also the installation method of the pump. fig. 10 overall solar integrated submersible pump fig. 11 pump outlet fig. 12 pump installation technique fig. 13 pump controller fig. 14 variable frequency drive integrated green submersible pumping system for future generation 49 6. degradation of solar power and efficiency one of the disadvantages of solar systems is that the output of all solar panels beings to degrade over time. as the year progresses, the output of solar panels also start to decline due to micro cracks developed in silicon solar cells. as the degradation gradually increases, the panels become completely crippled. the main causes of solar panel degradation are materials expanding and contracting at different rates with temperature changes and this puts joins between different materials under strain and causes slow deterioration. solar panels are damaged due to nature’s humidity and excessive heat. as per specification of monocrystalline solar cell depreciation of required output power and efficiency will be minimum compared to the other type of cells, but still the warranty period means that after 20 years both the quality and efficiency of the panel will decrease at a certain rate. solar panel efficiency means the ratio of the amount of light energy falling on the panel to the converted electrical energy. panels are typically about 20% efficient as per specification. this plant will give at least 97% normal power in the first year. the next 10 years it will run with 91% of total power and will continue to provide 83% of the total power for up to 20 years. 7. cost analysis and payback calculation although the initial cost of solar power is a bit higher, it is comparatively more profitable than conventional electricity. this project proves that the use of solar power instead of conventional electrical power is profitable. table 5 cost of overall project sl no name of material cost in indian currency (inr) 1 monocrystalline solar panel (number of panels: 38, maximum power=150) 55/per watt. (40x150) = 6000/-(per panel). total panel cost: 6000(each) x 38=228000 2 phase: 3 phase. motor power: 7.5 hp or 5.5 kw, voltage: 280440v. submersible pump 26000/ 3 solar pump controller with ac drive for 7.5hp submersible pump 16000/ 4 cost of mounting structure with installation cost 72000/ 5 cost of cable 15000/ 6 labor cost 20000/ total cost 382000/ submersible pump consumes 7.5 hp or 5595 watts load for 6 hours hour for one month. and the total electricity bill per unit of the consumer or tariff rate is 9 rs/(indian rupee). indian currency is prevalent in the market of india and nepal. consider, 1unit = 1kwh. total kwh in a month’s = 5595 watts × 6 hrs × 30 days = 1007100 watt/hour. (15) so total consumed units. 1007100 /1000 units total average units per months = 1007 units. cost of per unit is 9. 50 b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar so, total cost or electricity bill= 1007 × 9 = 9063 rs/-. (indian rupee) (16) average annual electricity cost = 9063 ×12 =108756 rs/-(indian rupee) (17) initial fixing and investment cost of solar system is comparatively very high, but the warranty period of pv panels is long, almost 20 years. manufacturers assure the concert guarantee for pump controllers and other accessories for about 5years. various manufacturers also offer linear performance guarantee for submersible pump for 5 years. overall investment cost of the project is 382000/as per table 6. average annual cost of electricity for conventional energy source is 108756 rs/-. if the depreciation of solar power is not estimated then payback will be around 3.5 years, but if the depreciation of solar power is taken into account, the pay back will come in 5 years. 8. conclusion in village area of nepal the accessibility of electricity by conventional supply system is very poor as well as maintenance of electrical power system not is not much better as frequent power supply cut off is a common incident, more over the cost of electricity is very high for common people. by eliminating the dependence on conventional electricity and using solar power, it is possible to improve the quality of agriculture by supplying the required amount of water throughout the day. solar energy is the main input of the pump and it takes no money to get solar energy. so, this project reduces the running cost of electricity. moreover, daily maintenance cost of this project is very low because the only maintenance is cleaning the dust from the panel from time to time. this method does not require much human resources throughout the day and it is possible to use the stored ground water properly for better quality of agriculture. as a result, the cost of farming in that village has dropped significantly, and the economic development of the people of that area has been remarkable. in addition to agricultural job, the water obtained in this way meets the demand for daily life in the area. references [1] s. rahman, alternative energy sources: the quest for sustainable energy. ieee power and energy magazine, 2007. [2] r. foster, m. ghassemi and a. cota, solar energy: renewable energy and the environment. crc press, 2009. [3] s. miric and m. nedeljkovic, "the solar photovoltaic panel simulator", rev. roum. sci. techn. électrotechn. et énerg., vol. 60, no. 3, pp. 273–281, 2015. [4] r. kumar, b. singh, "buck boost converter fed bldc motor drive for pv array based water pumping", in proceedings of the ieee international conference on power electronics, drives and energy systems (pedes), mumbai, india, 2014, pp. 1–6, 16–19. [5] h. wang and d. zhang, "the stand-alone pv generation system with parallel battery charger", in proceedings of the international conference on electrical and control engineering (icece’10), wuhan, china, 2010, pp. 4450-4453. [6] m. kolhe, "techno-economic optimum sizing of a stand-alone solar photovoltaic system", ieee trans. energy convers., vol. 24, no. 2, pp. 511–519, 2009. [7] d. debnath and k. chatterjee, "a two stage solar photovoltaic based standalone scheme having battery as energy storage element for rural deployment", ieee trans. ind. electron., vol. 62, no. 7, pp. 4148–4157, 2015. [8] s. krithiga and n. g. a. gounden, "power electronic configuration for the operation of pv system in combined grid-connected and stand-alone modes", iet power electron., vol. 7, no. 3, pp. 640–647, 2014. integrated green submersible pumping system for future generation 51 [9] i. j. balaguer-álvarez and e. i. ortiz-rivera, "survey of distributed generation islanding detection methods", ieee latin amer. trans., vol. 8, no. 5, pp. 565–570, 2010. [10] c. a. hill, m. c. such, d. chen, j. gonzalez and w. m. grady, "battery energy storage for enabling integration of distributed solar power generation", ieee trans. smart grid, vol. 3, no. 2, pp. 850–857, 2012. [11] w. xiao, f. f. edwin, g. spagnuolo and j. jatskevich, "efficient approaches for modeling and simulating photovoltaic power systems", ieee j. photovoltaics, vol. 3, no. 1, pp. 500–508, 2013. [12] s. jain, a.k. thopukara, r. karampuri and v.t. somasekhar, "a single-stage photovoltaic system for a dual-inverter-fed open-end winding induction motor drive for pumping applications", ieee trans. power electron., vol. 30, no. 9, pp. 4809–4818, 2015. [13] le an and d.d.-c. lu, "design of a single-switch dc/dc converter for a pv-battery-powered pump system with pfm+pwm control", ieee tran. ind. electron., vol. 62, no. 2, pp. 910–921, 2015. [14] q. yan, x. wu, x. yuan, y. geng and q. zhang, "minimization of the dc component in transformer less three-phase grid-connected photovoltaic inverters", ieee trans. power elec., vol. 30, no. 7, pp. 3984–3997, 2015. [15] a. sangwongwanich, y. yang and f. blaabjerg, "high-performance constant power generation in gridconnected pv systems", ieee trans. power elec., vol. 31, no. 3, pp. 1822–1825, 2016. [16] l. campanhol, s. silva, a. junior and v. bacon, "dynamic performance improvement of a grid-tied pv system using a feed-forward control loop acting on the npc inverter currents", ieee trans. ind. electron., vol. 64, no. 3, pp. 2092–2101, 2017. [17] a. radwan and y. mohamed, "power synchronization control for grid-connected current-source inverter-based photovoltaic systems", ieee trans. energy conv., vol. 31, no. 3, pp. 1023–1036, 2016. [18] g. n. tiwari and s. dubey, fundamentals of photovoltaic modules and their applications, centre for energy studies, indian institute of technology (iit) delhi, new delhi, india, rsc publishing, 2010, pp. 99–100. [19] p. singh and n.m. ravindra, "temperature dependence of solar cell performance an analysis", solar energy materials & solar cells, vol. 101, pp. 36–45, 2012. [20] a. m. nader, d. abderrahmane and a. said, "optimization of the performance of a photovoltaic pumping system by neuro fuzzy and direct torque control", rev. roum. sci. techn. – électrotechn. et énerg., vol. 59, no. 3, pp. 279–289, 2014. [21] p.k.r. reddy and j.n. reddy, "photovoltaic energy conversion system for water pumping application", int. j. emerg. trends electr. electron., vol. 10, no. 2, pp. 2320-2369, 2014. [22] s. biswas and m. tariq iqbal, "dynamic modeling of a solar water pumping system with energy storage", hindawi journal of solar energy, vol. 2018, id 8471715, 2018. [23] s.s. chandel, m. nagaraju naik, v. sharma and r. chandel, "degradation analysis of 28 year field exposed mono-c-si photovoltaic modules of a direct coupled solar water pumping system in western himalayan region of india", renew. energy, vol. 78, pp. 193–202, 2015. [24] s. lal, p. kumar and r. rajora, "techno-economic analysis of solar photovoltaic based submersible water pumping system for rural areas of an indian state rajasthan", sci. j. energy eng., vol. 1, no. 1, pp. 1-4, 2013. [25] s.s. chandel, m. nagaraju naik and r. chandel, "review of solar photovoltaic water pumping system technology for irrigation and community drinking water supplies", renewable and sustainable energy reviews, vol. 49, pp. 1084-1099, 2015. [26] z. zhang and t. stathopoulos, "wind loads on solar panels mounted on flat rooftops: progress and limitations", in proceedings of the 2014 world congress on advance in civil, environmental, and materials research (acem 14), busan, korea, 2014. [27] k. ragu and p.v. mohanram, "tolerance design of multistage radial flow submersible pumps", mechanika, vol. 1, no. 63, pp. 64-70, 2007. [28] m. t. chaichan, b. a. mohammed and h. a. kazem, "effect of pollution and cleaning on photovoltaic performance based on experimental study" int. j. sci. eng. res., vol. 6, no. 4, pp. 594-601, 2015. instruction facta universitatis series:electronics and energetics vol. 27, no 1, march 2014, pp. 137 151 doi: 10.2298/fuee1401137b evaluating system security using transaction level modelling  aisha bushager 1 , mark zwolinski 2 1 department of information systems, college of information technology, university of bahrain, bahrain 2 electronics and computer science, university of southampton, southampton so17 1bj, uk abstract. the design of secure systems requires the use of security analysis techniques. security objectives have to be considered during the early stages of system development and design; an executable model will give the designer the advantage of exploring the vulnerabilities early, and therefore enhancing the system security. in this work we create an executable model of a smart card system using systemc with the transaction level modelling (tlm) extensions. the model includes the security protocols and transactions. the model is used to compare a number of authentication mechanisms with different probabilities of failure. in addition, a number of probable attacks, including theft of a private key and denial of service were modelled to examine the vulnerabilities. the executable model shows that security protocols and transactions can be effectively simulated in order to design improvements to withstand different types of security attacks. key words: security modelling, systemc, transaction level modelling, protocols, smart cards. 1. introduction robust and secure system design requires the selection and implementation of a set of policies, procedures, architectures, technology, and personnel. however, there is no system that is 100% secure; there will always be a way to breach the system. the objective in security analysis is to identify the weak points. this requires modelling and simulation tools. we have used an executable model of a smart card system as an exemplar, including the security protocols and transactions, to allow examination of the security strengths and weaknesses by executing tests on the model. this paper extends work previously presented [1].  received january 12, 2014 corresponding author: mark zwolinski electronics and computer science, university of southampton, southampton so17 1bj, uk (e-mail: mz@ecs.soton.ac.uk) 138 a. bushager, m. zwolinski 2. related work security protocols are sets of rules designed to ensure particular security goals. however, designing and implementing these protocols is difficult and they may fail against various attacks. to be able to effectively integrate the security protocols at early stages of development, modelling languages and techniques are used to better visualize the entire system. one such modelling tool is communicating sequential processes (csp), which is a process algebra that is used to describe and analyse security properties and protocols by providing a mathematical framework [2]. however, to be able to use csp, the designer must have specialized knowledge and training, which limits the usage of this method. gspml, [3], is a visual security protocol modelling language. again, this language introduces notations and complex models that are targeted to security specialists. stereotypes and tags are used to create and present security requirements and assumptions, constraints may be attached but they should be satisfied by modelling elements with the related stereotype [4]. the unified modelling language (uml) version 2.0 has been widely used to model security protocols [5]. for example, umlsec [4], [6] is an extension to uml for integrating security related information into uml specifications, by specifying security requirements through stereotypes, tagged values, and constraints[7]. an adversary can be created in umlsec to model possible threats to a system. umlsec was used to find possible vulnerabilities in common electronic purse specifications (ceps) [4], it was also used to define security permissions that enforce restrictions on the workflows of a system [8]. none of the above modelling languages provides an automatic transition from design to code implementation. a designer would like to have an executable model that allows a better testing of the designed model and therefore links the gap between the design phase and the code implantation phase. in our work, an executable model is produced using systemc with the tlm extensions [9]. systemc has been used to produce a methodology to simulate security attacks on smart cards with fault injection [10] and it has also been used to create an environment for design verification of smart cards using security attack simulation [11]. in tlm, communication among computational components is modelled by channels and transaction requests are handled by calling interface functions of these channel models [12]. 3. using uml to model smart card transactions as an illustration of our methodology, we use a smart card system. because smart cards are used to store sensitive data such as pins, passwords, and keys, they are likely targets for criminal attacks. the main purpose of an attack is to get hold of this data. attackers might perform various numbers and types of attack on the smart card system. 3.1. overview of a smart card system figure 1 is a use case diagram that gives an overview of the basic components and functions of any smart card system. the use case diagram is a behavioural uml diagram that presents the system functionality. in our system, the actors illustrated in the figure represent the main components of the system, which are the user, smart card, smart evaluating system security using transaction level modelling 139 card reader, client, server, and database. the use cases represent the functions or services that take place while the system is operating. the focus of the analysis in this study will be on the functions of three main components, which are the user, smart card, and the smart card reader. fig. 1 overview of a smart card system the system combines three security mechanisms and a smart card ("what the user has"). the mechanisms are: pin, biometrics, and pki. the first two mechanisms are responsible for user identification and verification, a pin is: "what the user knows", and the biometrics are: "who the user is". pki verifies the devices in the system. when the user decides to use the smart card, the first step is to insert the smart card in the smart card reader. the smart card reader has number of jobs: it has to verify and authenticate the user and smart card, commit transactions, and exchange and confirm the user details with the other system components. to be able to demonstrate the transactions of the system, another type of uml diagram has to be used, figure 2. the following sections describe the registration phase and the verification phase of the smart card system and the potential threats and attacks. 3.2. smart card registration system to be able to demonstrate the transactions and message sequence between the smart card system objects, a sequence diagram is used, e.g. figure 2, which is a behavioural diagram that shows the interactions of system processes. the user provides the required information along with the biometric evidence. the system then saves the user details in the smart card and captures the fingerprint, which is the biometric method used in the proposed design, and produces a template that is 140 a. bushager, m. zwolinski stored in the system and the smart card. then, the registration system requests a pin from the user to be used in future verification processes. fig. 2 registration phase in pin, biometrics (fingerprint), and pki smart card system the pin is stored in the smart card for future verification. finally, the smart card system requests a private key from the certificate authority (ca) to generate a digital signature [13]. the ca, on the other hand, requests user verification from the registration system, generates a pair of keys for the user. the ca also issues a digital certificate corresponding to the public key, and sends the private key to the smart card to generate a digital signature that combines the private key and the biometric template of the user. 3.3. smart card system verification figure 3 shows the transactions that take place when the user uses the smart card in a security environment that combines pin, biometrics, and pki security methods. the sender first inserts the pin, the smart card reader extracts the stored pin from the smart card and starts the comparison process. if the match is successful the smart card reader will ask for another proof, which is the sender's fingerprint, otherwise, the transaction will be aborted after allowing the sender three attempts to enter the pin. the sender scans the finger through the smart card reader scanner; the reader will extract the sender's biometric feature and produce a template. the matching process will then take place and the result will decide whether the sender has permission to access the evaluating system security using transaction level modelling 141 system or not. if the match is true, the smart card releases the sender's private key. next, the sender starts to send a message to the receiver; the message is going to be digitally signed with the sender's private key, and the system will request the receiver's public key from the ca to encrypt the message. the ca will send the digital certificate and the message will be encrypted using both the sender's private key and the receiver's pubic key, therefore, the digital envelope is now ready to be sent securely to the receiver. finally, the receiver will send a request to the ca to get the sender's public key to decrypt the message. again, using both the sender's public key and the receiver's private key the receiver will be able to decrypt the message successfully. fig. 3 verification processes in pin, biometrics (fingerprint), and pki smart card system these security methods should achieve the security goals of confidentiality, integrity, authentication, and non-repudiation. however, each mechanism has its pros and cons. for example, fingerprints have disadvantages: how can we know that the biometric provided is not subject to misuse? if the user was clever and powerful enough to fool the system and use a false fingerprint, then the system will be breached and an intruder will have access to the real user's credentials and privileges. the pki method has its disadvantages as well. if one breach takes place during the transaction the sender and the receiver can both suffer security loss. 142 a. bushager, m. zwolinski 3.4. smart card system threats threats are the possible means by which a security policy may be breached [14]. a threat source can be any person, thing, event, or idea that poses danger to an asset within a system in terms of confidentiality, integrity, availability, or legitimate use. moreover, threats can be deliberate or accidental [14]. if deliberate, a threat can be categorized as passive, such as network sniffing, or active, such as negligence, errors, attempt to gain unauthorized access to the system, or changing the value of a particular transaction by malicious persons. therefore, possible threats on a smart card system include unauthorized system access, hacking and system intrusion, information leakage or theft, integrity violation (errors and omissions by insiders or outsiders), distributed denial of service, illegitimate use (dishonest or disgruntled insiders or outsiders), system penetration and tampering. threat sources have different motivations that may lead to various attacks on any government or business information system; therefore, the parties involved in the smart card system must be familiar with the human threat environments and their different motivations. 3.5. possible attacks on a smart card system attacks may occur at every single stage of a product's lifecycle, starting from the development stage, the manufacturing stage, and ending up with actual usage. attacks that take place at the development stage and the manufacturing stage of a smart card are most likely to be carried out by an insider, [15]. attacks during the smart card use stage can be physical or logical [15]. physical attacks may manipulate the semiconductor itself and usually require equipment like microscopes, focused ion beams, etc. [16]. sidechannel attacks consist of observing behaviour while the information is being processed and include timing analysis and power analysis [17]. in contrast, logical attacks or so-called software attacks do not attack the hardware properties directly; they are more focused on the communication and flow of information between the smart card and the terminal [15]. attackers can write malicious software, that can be employed in a software attack on a smart card, for example, in smart cards that support java card it is possible to load and run software. examples of logical attacks could be bug exploits, illegal bytecode, and attacks during pin comparison. other types of attacks take place during the authentication phase of the smart card system, where the user identity is authenticated using different types of authentication mechanisms like biometrics [18]. 3.6. modelling attacks using umlsec after using uml diagrams to express the smart card system protocol and processes, and to represent the transactions that take place while messages are exchanged during the registration and verification processes, in addition to knowing where the areas are that could be vulnerable to attacks, it is also essential to test the model against possible attacks. umlsec was used to model attacks, using stereotypes such as secrecy and secure information flow along with their tags and constraints. an adversary type in umlsec can have a function called threat that allows the adversary to commit delete, read, and insert attacks. nevertheless, the model is still static and not executable. evaluating system security using transaction level modelling 143 4. animating the model using systemc tlm systemc was developed to support the need for a language that improves the overall productivity for designers in the electronic systems field [9]. it supports the development of complex systems by the design and verification of hardware system components at a high level of abstraction. the systemc library is open source and written in c++. in addition, it contains a lightweight kernel that schedules the processes. the systemc library provides concurrent and hierarchical modules, ports, channels, processes, and clocks. large designs are always broken down hierarchically to be able to manage complexity; structural decomposition of the simulated model in systemc is specified with modules. the module is the smallest container with state, behaviour, and structure for hierarchical connectivity [9]. within a module, we use a thread process, which is associated with its own thread of execution. once the thread starts executing it is in complete control of the simulation until it chooses to return control to the simulator. hence, the thread process is used to model sequential behaviour [9]. systemc has two ways to pass control to the simulator again, one way is to exit by (return), in this case the thread is totally stopped, the other way is by having a (wait), therefore, every thread contains an infinite loop and usually has at least one wait function. the tlm library is built on top of systemc and allows abstract communications to be modelled in a structured manner. in tlm communication between components is modelled by channels and transaction requests, which are implemented by calling interface functions of the channel models [12]. the initiator port and the target port are distinguished in tlm. an initiator is a module that creates new transactions and passes them on by calling a method of one of the core interfaces. the target is a module that receives the transactions from the initiator. a system component can be an initiator, a target, or an interconnect. the interconnect module accesses a transaction but does not act as an initiator or a target for that transaction, for example routers can be interconnect modules in a system. another important element in tlm is the generic payload, which allows data abstraction. 4.1. smart card system simulation the executable model produced in our work shows the sequence of transactions that occur in the smart card system while the smart card is used; they correspond to the transactions in figure 3. hence, in the executable model, the smart card system objects and their related transactions, the lifelines in the uml diagram, are represented as objects – modules in systemc, and the arrows are represented as tlm transactions. the modules have two types of socket, an initiator socket that is responsible for sending the transactions and a target socket that is responsible for receiving the transactions; both sockets are defined in the module structure. the sender module communicates with the smart card module and the smart card reader module. an initiator socket from the sender to the smart card is created, along with another initiator socket to the smart card reader module, to allow the sender to send transactions to both modules. the initiator is responsible for calling the transport function to send the payload to the target socket. on the other hand, a target socket is created and then registered in the constructor; the target socket receives the payload from the transfer function for processing and response. 144 a. bushager, m. zwolinski the next step is creating the threads that correspond to the processes taking place in each module, creating the payloads that are transferred from a module to the other, creating functions, and setting events and variables. in the smart card executable model, the authentication methods used are pin and biometrics. the user, modelled as part of the sender module, enters the pin. if the pin is correct, the user enters the fingerprint. the number of attempts allowed for the sender is programmable. the executable model counts the number of attempts, and compares the inserted pin and fingerprint with the saved pin and fingerprint template in the smart card. also, there is a time limit for inserting the pin and fingerprint, otherwise a timeout message will appear. if the number of incorrect attempts exceeded the limit, the system blocks the smart card and saves the smart card id in the banned smart card list. errors in entering the correct pin vary; it could be wrong digits, taking a long time to insert the correct pin, or an attacker trying to insert the pin randomly. the same steps take place when entering a fingerprint. the successful attempts at pin and fingerprint entry will confirm that the sender is a legitimate user. therefore, when the sender passes the authentication step, the smart card releases the private key. then the transactions related to signing the message with the private and public keys take place, and finally the system sends the digitally signed message to the receiver. in reality, the user enters the pin and scans the fingerprint through an input device like a keypad, biometric scanner, or touch pad. however, our executable model can randomise the pin and fingerprint entries, and also randomise the correct and incorrect time. a simple pseudo-random number generator is used to randomise the pin and fingerprint entries along with randomising the correct and incorrect time in seconds. the simple random number generator is fast and provides better randomness properties like adjusting the ratios, changing the range of sample smart cards to be tested, and modifying the probabilities of failure. an arbitrary ratio of successful pin and fingerprint is used; it can be modified to allow flexibility in testing different probabilities of failure. the executable module has the smart card system objects and their related transactions. the lifelines in the uml diagram are represented as objects, modules in systemc, and the arrows are represented as transactions using tlm. the transitions in the output correspond to the transaction number in the uml diagram in figure 3. obviously, the designer can observe the attempts to enter the right pin and biometric along with the required timing. this allows the testing of the effectiveness of the authentication methods used. by running the simulation on different numbers of smart cards with different probabilities of failure it is possible to evaluate the effectiveness of each authentication method. 4.2. testing the authentication methods validation of the authentication methods in the smart card system is based on two proposed models. the first model uses a pin followed by a biometric authentication method, while the second model reverses the sequence. the main reason behind carrying out these correctness tests is to check that the simulation using the executable model is actually working. the purpose of these tests is to verify:  the functionality/workability of the smart card simulation tool and the availability of test results;  the reliability of the smart card simulation tool through simulation; evaluating system security using transaction level modelling 145  the degree of flexibility in assigning thresholds and failure probabilities, which will assist in customising the simulation tool based on the industry and sector in which the smart card system will be used;  the speed of testing, which allows users of the simulation tool to obtain results and manipulate thresholds with ease and flexibility. the following tests have been performed: 1. pin followed by biometrics. 2. biometrics followed by pin. for each of these tests, an arbitrary probability of failure has been assigned to each of the authentication methods. for example, the probability of failure for the pin is set at 15%, for the biometrics (fingerprint) it is set at 10%, and the time allowed for entering the correct pin and correct fingerprint is set at 10 seconds for each. the reason for assuming that the pin has a slightly higher probability of failure is that the pin authentication method is weaker than the biometrics and thus there is a higher probability of successful attacks and user errors and mistakes. the first test (pin followed by biometrics) used 100 to 3,000 smart cards. table 1 displays the results for the authentication method based on the scenarios of potential failure/error. table 1 results from testing the pin followed by biometrics authentication method remarks number of simulated smart cards 100 500 1000 1500 2000 2500 3000 good pin decoded 100 500 998 1490 1976 2464 2950 pin incorrect/re-enter correct pin 16 102 207 302 394 493 587 timeout error (pin) 9 58 125 189 257 299 376 good bio decoded 100 500 998 1490 1976 2464 2950 bio incorrect/re-enter correct bio 13 38 82 126 167 200 234 timeout error (bio) 11 58 124 171 236 299 359 an examination of the results may be interpreted according to the industry and sector of use, which dictate the levels of acceptable thresholds and probabilities of failure. initially, when examining the relationship between the expected and observed results of failure attempts across all sample sizes we are able to confirm that it is a linear relationship and that observed failure attempts are always below the expected range. in a sample of 3,000 cards, failure attempts are 963 over 30% of the sample size. this failure percentage alerts us to the vulnerability of the system. this entails a low level of acceptance of usage from both parties due to the increased risks represented by the use of this method. having such a high degree of risk and vulnerability in the system will expose it to numerous additional threats from different sources. the results of the expected and observed pin and biometric failure attempts are listed in table 2 and recorded as percentage of the total sample size. 146 a. bushager, m. zwolinski table 2 percentages of expected and observed pin followed by biometrics failure attempts number of smart cards 100 500 1000 1500 2000 2500 3000 percentage observed (pin) 8 11 11 11 11 11 11 percentage expected (pin) 15 15 15 15 15 15 15 percentage observed (bio) 8 6 7 7 7 7 7 percentage expected (bio) 10 10 10 10 10 10 10 when comparing the observed pin failure attempts to the biometrics failure attempts, it is noted that the percentages are 11% and 7%, respectively. although the difference is relatively small, it indicates that the pin authentication method requires additional monitoring, particularly in avoiding risks of external threats that pose potential harm against the users and system confidentiality and privacy. furthermore, under the simulation of 1,000 smart cards, it is noted that two cards have been banned for reaching the maximum attempts of pin entry. however, as the sample size increases, the number of banned smart cards grows significantly as illustrated in figure 4. fig. 4 smart cards banned in pin and biometrics proposed model for example when simulating 3000 smart cards, about 50 of them were banned during the pin authentication step. on the other hand, for the biometrics authentication method, it is noted that no smart cards have been banned when using this method. this is a clear indication of the level of security that the use of biometric authentication provides when adopted by smart cards, particularly ones that store and have access to sensitive data. in the second test, the initial expectation is that the use of a biometrics authentication first will decrease the possibility of failure attempts and attacks. this mechanism supports the security concept of using something you own (smart card), something you are (biometrics), and something you know (pin). -10 0 10 20 30 40 50 60 100 500 1000 1500 2000 2500 3000 fa ilu re a e m p ts number of smart cards max pin a empts/card banned max fingerprint/card banned evaluating system security using transaction level modelling 147 when using the biometrics authentication method before the pin, the number of banned smart cards is recorded at 7 and 2 consecutively for a sample size of 3,000 smart cards. this is low compared to when the pin is used prior to the biometrics where the number of banned smart cards was 50 and 0 consecutively for a sample size of 3,000. given the benefits to the user and administrator, as well as the practicality of using the biometrics and pin authentication methods across most industries, it is recommended to adopt this method in the given order as it provides better security levels. in summary, the executable model developed using systemc tlm allowed the designer to test the proposed models that support a combination of authentication methods; by running simulations on different number of smart cards with different authentication methods and recording the results, the designer can examine the robustness of the proposed models in terms of enhancing security specifically during the phase of authenticating the smart card system users. the simulation tool provided a quick, automated, and flexible environment to test the proposed models, in addition to allowing the designer to observe and modify the transactions whenever changes are required. testing the proposed model against physical and logical attacks while the smart card is in use has resulted in giving the attacker the chance to get hold of the users private key, and therefore violating numbers of security properties like authentication, confidentiality, privacy, and integrity. this in essence shows that the system is vulnerable to threats and successful attacks taking place. yet, to be able to reduce the probability of successful attacks, our approach allows the designer to modify the executable model to test against future attacks. 4.3. simulating attacks on smart card system there are different types of attacks that have different probabilities of occurrence and different consequences for the smart card system and its users. each attack targets different areas of the system and has a specific goal; some attacks violate the smart card system authentication, privacy, and confidentiality like attacks on pin or attacks on biometrics. other attacks violate the smart card system integrity, reliability, and even authentication like invasive attacks, side channel attacks, etc. figure 5 is a uml sequence diagram that demonstrates the types of attacks that may occur in any smart card system, even though safeguards and controls like pin, biometrics, and pki are in place. the purple callouts represent the types of possible attacks that an attacker can carry out in that area precisely; in addition, the red callouts represent the attacks that are created in the executable model to test the system robustness. the executable model allows us to simulate an attack on the system. an attack on any part of the system is essentially another transaction inserted into the model. for example, to simulate an attack that allows the attacker to steal the private key released from the smart card object, which is coded as a state machine, an attacker is implemented as a class that can intrude into multiple modules in a thread-safe manner. thus, a transaction is effectively inserted into the model with one line of code at the appropriate point in the smart card module. 148 a. bushager, m. zwolinski fig. 5 possible attacks on pin, biometrics (fingerprint), and pki smart card system now, the model waits for transitions 1 to 8 to occur, and then the attacker interferes and attacks the system after transition 8 where the private key is released, figure 6. smartcard_reader_object: begin transition 8 smartcard_reader_object: end transition 8 sender_object: end transition 5 attacker initialized, @104 s attacker stole the private key, @104 s smartcard_object: begin transition 9 smartcard_object: end transition 9 fig. 6 simulated private key theft in this example, the attacker has to conduct a physical or logical attack to be able to get hold of the private key. for example, the attacker can practise a successful side channel attack, invasive attack, attacks during pin comparison, or attacks on biometrics. the executable model in this study does not simulate the physical or logical attack; it only assumes that a physical or logical attack has taken place. for that reason, it simulates an attack and creates an attacker class with features that allow the attacker to modify the transitions and as a result gain access to the user's secret information, specifically the private key. evaluating system security using transaction level modelling 149 another example of utilising the executable module in attacks simulation is by modelling another sort of an attack, which is carried out on the key exchange operation. this time the attacker monitors the public keys exchanged between the users and the ca, and gets hold of the users' public keys. being able to interfere with the key exchange protocol opens a door for the attacker to practice attacks that result in network disruption and loss of user trust like for example carrying out a man-in-the-middle attack [19], or a multi-protocol attack [20]. this example focuses on modelling an attack that allows the attacker to interfere through the transactions exchanged between the user and the receiver and gets hold of the data exchanged without both of the users knowing, by being able to model the attack, it is possible to point out a gap in the protocol that allows an attacker to monitor the flow of data, interfere within the transactions, and get hold of the public keys exchanged, figure 7. smartcard_object: begin transition 13 certificate_authority_object: begin transition 14 certificate_authority_object: end transition 14 attacker stole the receiver public key, @203 s smartcard_object: end transition 13 smartcard_object: begin transition 15 smartcard_object: end transition 15 smartcard_object: begin transition 16 smartcard_object: end transition 16 receiver_object: begin transition 17 certificate_authority_object: begin transition 18 certificate_authority_object: end transition 18 attacker stole the sender public key, @206 s receiver_object: end transition 17 fig. 7 simulated public key theft a denial of service (dos) attack is simulated using the same model. the attack aims at violating the availability property of the system security. the dos attack will take place against the certificate authority server; the attacker attempts to exhaust the server, which will result in the server being unable to provide the services for legitimate users. the following is part of the dos attack simulation output: as the output shows, the transactions of the smart card system are running normally, however, when the dos attack successfully takes place, the service is denied and the attacker gets hold of the users public keys exchanged among the system objects. in addition, the subsequent transactions failed to occur because the certificate authority server is unavailable. this attack shows that the availability property has been violated and the system users will not be able to use their smart cards until the certificate authority server recovers from the attack. dos attacks are indistinguishable from legitimate sign-in requests. the only differentiation is in the frequency of sign-in attempts and their origin. a large number of sign-in attempts in rapid succession can be indicative of a dos attack. hence, smart card systems can be protected from dos attacks by identifying high frequency of login attempts from a source and denying service to the source of such attack. another effective way is to limit the number of login attempts a user is allowed at a time. in summary, the executable model developed using systemc tlm allowed the designer to test the proposed models that support a combination of authentication 150 a. bushager, m. zwolinski methods; by running simulations on different number of smart cards with different authentication methods and recording the results, the designer can examine the robustness of the proposed models in terms of enhancing security specifically during the phase of authenticating the smart card system users. the simulation tool provided a quick, automated, and flexible environment to test the proposed models, in addition to allowing the designer to observe and modify the transactions whenever changes are required. in addition, the systemc tlm executable model also allowed the designer to discover the weak points of the system and point out vulnerabilities; the successful attacks indicate that there are weaknesses in the security protocol. to be able to reduce the probability of successful attacks, the designer can modify the executable model to test against future attacks. in contrast with the uml diagram, the animation makes it possible to see the attack actually happening. moreover, it is possible to make changes easily within the model and to try a number of attacks to test the system's robustness by simply inserting transactions into the uml diagram, and transforming them into transactions within the systemc tlm executable model. 5. conclusion uml diagrams are an excellent way of modelling systems, along with their extensions; they have features that show the designer how things should work. however, uml does not allow the designer to see what happens if something goes wrong with the system. therefore, to be able to see things happening and give reasons about the system, simulation has to take place. systemc tlm was used to transform a static uml model into an executable model. the executable model providing the opportunity to see the transaction flow within the system objects in an animated manner. in addition, it allowed the simulation of attacks in different parts of the system. the model gives a clear view of the weaknesses in the security requirements, methods, and protocols used in the smart card system. references [1] a. bushager and m. zwolinski, "modelling smart card security protocols in systemc tlm", in: embedded and ubiquitous computing (euc), 2010 ieee/ifip 8th international conference on. 2010, pp. 637–643. [2] s. schneider, "security properties and csp", in: proceedings ieee symposium on security and privacy, 1996, pp. 174 –187. [3] j. mcdermott, "visual security protocol modeling", in: proceedings of the 2005 workshop on new security paradigms, nspw '05:. new york, ny, usa: acm. isbn 1-59593-317-4; 2005, pp. 97–109. [4] j. jürjens, "umlsec: extending uml for secure systems development", in: uml 2002 – the unified modeling language. 2002, pp. 412–425. [5] object management group, introduction to omg's unified modeling languagetm (uml ®) 2005;url http://www.omg.org/gettingstarted/what is uml.htm. [6] j. jürjens, "modelling audit security for smart-card payment schemes with umlsec", in: proceedings of sec 2001 – 16th international conference on information security, 2001, pp. 93–108. [7] j. jürjens, "using umlsec and goal-trees for secure systems development", in: proceedings of the 2002 acm symposium on applied computing. 2002, pp. 1026–1031. [8] j. jürjens, j. schreck, and y. yu, "automated analysis of permission-based security using umlsec", in: fundamental approaches to software engineering, 11th international conference, fase 2008, budapest, hungary, march 29-april 6, 2008. proceedings. 2008, pp. 292–295. evaluating system security using transaction level modelling 151 [9] ieee standard system c language reference manual. ieee std 1666 2005 [10] k. rothbart, u. neffe, c. steger, r. weiss, e. riegerand a. muehlberger, "high level fault injection for attack simulation in smart cards", in: proceedings of asian test symposium 2004, pp. 118–121. [11] k. rothbart, u. neffe, c. steger, r. weiss, e. rieger and a. muehlberger, "extended abstract: an environment for design verification of smart card systems using attack simulation in systemc", in: acm/ieee international conference on formal methods and models for co-design, 2005, pp.253–254. [12] l. cai, and d. gajski, "transaction level modeling: an overview", in: proceedings of the 1st ieee/acm/ifip international conference on hardware/software codesign and system synthesis. codes+isss '03; new york, ny, usa: acm. isbn 1-58113-742-7; 2003, pp. 19–24. [13] c. williams, "configuring enterprise public key infrastructures to permit integrated deployment of signature, encryption and access control systems", in: military communications conference, 2005. milcom 2005. ieee. 2005, pp. 2172 – 2175 vol. 4. [14] r.j. anderson, security engineering: a guide to building dependable distributed systems. wiley publishing; 2 ed.; 2008. isbn 9780470068526. [15] w. rankl, "overview about attacks on smart cards",information security technical report 2003, vol. 8, pp.67 – 84. [16] k. markantonakis, m. tunstall, g. hancke, i. askoxylakis, and k. mayes, "attacking smart card systems: theory and practice",information security technical report 2009,vol. 14, pp.46 – 56. [17] k. baddam, and m. zwolinski, "evaluation of dynamic voltage and frequency scaling as a differential power analysis countermeasure", in: vlsid '07: proceedings of the 20th international conference on vlsi design. washington, dc, usa: ieee computer society. isbn 0-7695-2762-0; 2007, pp. 854–862. [18] x. leng, "smart card applications and security. information security technical report 2009, vol. 14, pp. 36 – 45. [19] c. y. yang, c.c. leeand s.y. hsiao, "man-in-the-middle attack on the authentication of the user from the remote autonomous object". international journal of network security, 2005, pp.81–83. [20] a. m. johnston and p.s. gemmell, "authenticated key exchange provably secure against the man-in-themiddle attack". journal of cryptology, 2002, pp.139–148. instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 161 178 doi: 10.2298/fuee1702161p spice modeling of ionizing radiation effects in cmos devices  tatjana pešić-brđanin faculty of electrical engineering, university of banja luka, republic of srpska, bosnia and herzegovina abstract. electric characteristics of devices in advanced cmos technologies change over the time because of the impact of the ionizing radiation effects. device aging is caused by cumulative contribution of generation of defects in the gate oxide and/or at the interface silicon-oxide. the concentration of these defects is time and bias-dependent values. existing models include these effects through constant shift of voltage threshold. a method for including ionizing radiation effects in spice models of mos transistor and finfet, based on an auxiliary diode circuit using for derivation of values of surface potential, that also calculates the correction time-dependent voltage due to concentration of trapped charges, is shown in this paper. key words: ionizing radiation effects, trapped charges, spice model, cmos devices 1. introduction with aggressive scaling of device dimensions in cmos technologies, which includes the decrease of oxide thickness and the increase of doping concentration in the channel, the susceptibility of the most cmos technologies has been reduced. scaling of the oxide thickness caused the decrease of concentration of fixed charge in the oxide, because the value of the concentration is directly proportional to the oxide thickness. on the other side, the increase of doping concentration in the channel decreased the oxide trapped charge effect on the surface potential of the channel, which also caused robustness of the components on ionizing radiation [1]. however, recent studies showed that the negative bias temperature instability damage and hot carrier injection damage were attributed to the charges trapped in the oxide (with areal density nox) and/or at the interface of the silicon and oxide layers (with energy density distribution dit) [2-4]. therefore, trapped charges still represent a potential radiation threat and have measurable impact on the integrated circuits performances [2,5].  received november 2, 2016 corresponding author: tatjana pešić-brđanin faculty of electrical engineering, patre 5, 78000 banja luka republic of srpska, bosnia and herzegovina (e-mail: tatjanapb@etfbl.net) 162 t. pešić-brđanin a harmful effect of ionizing radiation on cmos devices can be diminished by using well-known techniques, such as radiation-hardening-by-process (rhbp) and radiationhardening-by-design (rhbd) techniques [6,7]. however, even with significant efforts in rhbp and rhbd techniques, the capability of estimating the influence of ionizing radiation on electric characteristics of devices in advanced technologies are still improper [8]. analysing of test ic circuits on ionizing radiation is quite expensive [7], so the incorporation of ionizing radiation effects in devices compact models used in standard electric circuits simulators is put upon as an alternative. the incorporation of these effects needs the knowledge of physical processes which contribute to emerging of the defects due to ionizing radiation and the impacts which these effects have on the electric characteristics of components in advanced cmos technologies [8,9]. numerous existing techniques for modelling these effects in circuit simulators are based on the fixed change of threshold voltage (threshold voltage shift), not considering the special impact which these defects have on the electric characteristics of the transistors [2,10-12]. previously derived surface-potential based non-quasi static mos model (nqs mos model) and non-quasi static soi model (nqs soi model) can be modified as to include these effects of oxide trapped charges and interface trapped charges is described in this paper [13,14]. 2. ionizing radiation effects in cmos devices the main cause of the damage that occurs in cmos devices after ionizing radiation is the generation of the electron-hole pairs in the oxide (or another dielectric) as a material that is the most sensitive to ionizing radiation in cmos devices. after the generation of the electron-hole pairs, some of the pairs are immediately recombined. since the electron mobility in the oxide is considerably bigger that the hole mobility [15,9], the electrons will be soon swept out of the oxide or the dielectrics, while the holes will move slowly through the oxide to the interface sio2-si, causing long-term effects of the ionizing radiation. fig. 1 shows the processes after the ionizing radiation. fig. 1 processes in the oxide after the ionizing radiation [16] spice modeling of ionizing radiation effects in cmos devices 163 vacancies in the oxide or the dielectrics can trap the generic holes. a total amount of trapped charge in the oxide is nox. the trapped charge changes the threshold voltage thv of cmos devices for the threshold voltage shift [17]: , 2 ox oxox th ntq v   (1) where q is the electron charge, tox is the oxide thickness and ox is the oxide permittivity. the threshold voltage shift vth is negative, which means that in the case of the nmos transistor the off current increases, while in the case of the pmos transistor the total value of threshold voltage vth increases, as shown in fig. 2(a). it can be concluded from (1) that vth depends on the square of the oxide thickness; with the decrease of the oxide thickness in nanometer cmos technologies and due to the change of the threshold voltage the oxide trapped charge will be smaller. fig. 2 illustration of the threshold voltage shift vth due to the oxide trapped charges (a) and increase in subthershold swing due to interface trapped charges (b) [17] after the ionizing radiation, the generation of interface traps occurs, which concentration is nit. the generation holes react with hydrogen atoms in the oxide, making in such a way h + ions [18]. these ions move by drifting to sio2-si interface, and create 164 t. pešić-brđanin dangling bonds (i.e. pb centres) [2]. interface trapped charges are often linked with the permanent effects of components aging [2,10]. fig. 2(b) shows the impact of the generation of trapped charges at the sio2-si interface on the transfer characteristic of the transistors. it can be noted that these charges increase the swing in the device subthreshold region. for nmos and pmos transistors, the generation of interface trapped charges decreases the transistor off current. 3. nqs mos and nqs soi transistor models static and dynamical characteristics of transistors can be described by set of basic equations, which are comprised of poason's equation, drift-diffusion and continuity equations [19]. since mos transistor modelling is three dimensional problem, solving these sets of equations is complex and memory demanding. however, for numerous practical applications of mos transistors, changes in the third direction can be neglected and problem can be reduced to two dimensional problem (to x and y direction). 3.1. nqs mos transistor model in [13] a physically based nqs mos transistor model is described, which belongs to a group of models based on surface potential. fig. 3 shows equivalent model scheme, which as a subcircuit can be embedded into electric circuit simulators. external elements of transistor model (resistors and capacitors) can be modelled in a similar way as in other stationary or non-stationary models. unlike some known models [20-22], in the nqs mos model there are no analytical expressions for node currents, but they are obtained after the solution of equivalent circuit shown on fig. 3(a). this subcircuit has two parts, as shown on fig. 3(b):  internal part is connected to transistor gate terminal. this part of the model is, in fact, equivalent line that models drift-diffusion transport of electrons in transistor channel;  external part is connected to source, drain and gate terminals, and it contains current-controlled current sources is1 and isn. this part of the circuit is defined by the potential of source, drain and substrate that is obtained by mirroring the currents which flow through voltage sources s1 and sn. voltage generators s1 and sn copy values of boundary surface potentials to subcircuit in the source end and the drain end of channel. voltage generator vb serves to copy bulk polarisation to equivalent subcircuit. capacitance coxk represents gate-oxide capacitance (coxk = cox / n). the other model elements rk and ck, non-linear channel resistance and depletion region capacitance, are respectively defined by the equations: 3 31/ 1 2 1 4 5 6 (1 ( )) (1 ( ( )) ) , ( ) a a gs sk sk sk k gb fb sk sk a v a r a a v v a               (2) 1/ 20 7 ( ) , 2 bk si ch k sk sk sk q qn c a           (3) spice modeling of ionizing radiation effects in cmos devices 165 where the constants a1  a7 are physically based, nch is doping concentration in the channel and si is the silicon permittivity. surface potential of every cell is denoted with sk. the derivations for (2) and (3) and the expressions for a1  a7 are given in [13]. (a) (b) fig. 3 nqs mos model (a) and the equivalent subcircuit (b) in a surface charge-sheet model, which describes mos transistor operation [23], the boundary channel potentials s1 and sn at the source and drain side are functions of biasing voltage of transistor terminals through the following recurrent relations [24]: 166 t. pešić-brđanin 2 1 1 12 1 1 2 ln ( ) ,s f sb t gb fb s s t v v v v v                    (4) 2 2 1 1 2 ln ( ) .sn f sb ds t gb fb sn sn t v v v v v v                     (5) in the previous equations  is the body factor, vt is the thermal voltage, f is the channel potential (=vt ln(nch/ni))) and vfb is the flatband voltage. since the equations (4) and (5) are implicit relations, to determine surface potentials s1 and sn there are several iterative methods proposed in the literature [25]. in the nqs mos model, relations (4) and (5) are determined by diode circuits. for any point y in the channel is: 2 2 1 1 exp( / ) 1 exp(2 / ) ( ) 1.sy t fy t gb fb sy sy t v v v v v                     (6) by comparing the equation (6) with the diode current expression: 0 (exp( / ) 1)d sy t ssi i v i   (7) the conclusion is that: 2 2 0 1 1 exp(2 / ) ( ) 1, 1. ss fy t gb fb sy sy t i v v v v i                    (8) when determining the boundary surface source potential s1, in the equation (8) sy and fy should be replaced with sy = s1 and fy = 2f + vsb, consecutively, while for determining boundary surface potential on the drain side sn instead sy and fy should be used sn and 2f + vsb + vds, respectively. owning to this type of analysis, it is possible to construct a circuit for solving equations (7) and (8), which is comprised of a diode (with unit current i0 = 1) and voltage-controlled current source, where the current is calculated by the equation (8). figure 4 shows this type of auxiliary diode circuit. for determining both boundary surface potentials, 1s and sn , there are used two identical diode subcircuits and the described method is used to solve the equations (4) and (5). the values of the boundary surface potentials determined in this way are copied with voltage generators s1 and sn (shown in fig. 3(b)) on the input and output of equivalent circuit to solve the transport of the electrons in the channel. knowing the boundary surface potentials allows us to calculate the values of nonlinear resistors and capacitors rk and ck, namely to determine the transistor currents. fig. 4 diode subcircuit for solving surface potentials spice modeling of ionizing radiation effects in cmos devices 167 a physical base of the nqs mos model in an easy way allows including significant effects shown in aggressive scaling of transistor dimensions, like, for example, short channel effects and quantum-mechanics effects. 3.2. nqs soi transistor model a compact model for n-channel fully depleted soi mos transistor with double gate (fd soi transistor) is developed based on the nqs mos model, and it is applicable for asymmetrical and symmetrical planar structures [14]. in non-stationary model of fd soi mos transistor (nq soi model), a transistor is represented by parallel connection of two soi transistors with one gate, as shown in fig. 5, to model current in a front and back channel [14]. fig. 5 schematic presentation of fd soi transistor (a) and its electric equivalent (b) by comparison with the nqs mos model, recurrent expressions for calculating boundary surface potentials in the nq soi model also contains the influence of biasing of both gates. so the boundary surface potentials in channel s1 and sn in the fd soi transistor are connected with biasing of front (vgf) and back (vgb) gate, and biasing between drain and source vds with new recurrent relations [26,27]: 1 11 1 2 2 2 1 12 2 2 / / // / 1 1 1 ( ) ( ) ( ) ( ) ,f t s t s tb t b t oxf gf fbf s gf fbb b oxb v v vv v t t s b t v v v v t v e e e v e e                             (9) 2 2 2 2 2 (2 ) / / / / / 1 ( ) ( ) ( ) ( ) ,f ds t sn t bn t sn t bn t oxf gf fbf sn gf fbb bn oxb v v v v v v t t sn bn t v v v v t v e e e v e e                               (10) where, in the case of fully depleted silicon layer, boundary potentials of back channel can be expressed as: ,and 22 11 si sich snbn si sich sb tnqtnq      (11) while for a fully symmetrical transistor applies toxf = toxb. in the equations (9)-(11) the index f relates to the front gate, and the index b relates to the back gate. recurrent 168 t. pešić-brđanin relations (9) and (10) are calculated with the assumption that the difference of fermi’s potentials between the source and the drain is equal to the voltage vds. electric potential distribution in the channel through depth, i.e. in the line of axis x, is obtained by solving these recurrent relations (fig. 6). fig. 6 electric potential distribution in the channel through depth of fd soi transistor for applications in the nq soi model for a symmetrical fd soi mos transistor, recurrent equations for calculating boundary surface potentials can be written with basic algebraic transformations [14] in the following form: / / 1 2( ) ( ) ,sx t sx tv v s s si e i e i     (12) while: 2 2 2 2 2 1 1 ( ) ,ch si ch si s gf fbf sx gf fbb sx t si si qn t qn t i v v v v v                           (13) ,exp1 2 / 1                   sit sichtvfx s v tnq ei   (14) ,exp1 2 2          sit sich s v tnq i  (15) where on the source side sx = s1 and fx = 2f , while on the drain side the changes have to be made sx = sn and fx = 2f + vds. in the previous expressions, tsi is the silicon film (body) thickness. auxiliary diode circuits, similar to the nqs mos model for solving recurrent relations, are used in this way for calculating boundary values of surface potentials in the nq soi model. fig. 7 shows equivalent diode circuit for solving the equation (12) [14]. fig. 7 diode subcircuit for solving surface potentials in nqs soi model spice modeling of ionizing radiation effects in cmos devices 169 4. inclusion of nox and dit in nqs mos and nqs soi models a physical foundation of previously described models allows easily inclusion of effects important for transistor operation. modelling of the effects of generation interface trapped charge with energy density distribution dit and oxide trapped charge with areal density nox is possible in nqs mos and nqs soi model by changing the surface potential equations. it is possible to model the impact of these effects onward on the characteristics of transistor in two ways: 1. auxiliary diode circuits, with the included effects of nox and dit, are used for determining surface potentials for use in nqs mos and nqs soi models or 2. auxiliary diode circuits, with the included effects of nox and dit, are used for determining surface potentials, and then to connect consecutively to gate of some standard models (for example, bsim 4 for mos transistor or bsim.cmg for finfet). a total amount of electric charge caught in oxide is: ,oxox qnq  (16) while a total amount of interface charge [19]: , 2 2/           f g it ge fe ititit e e qddedqq (17) where eg / 2 is the midgap energy level at the interface and ef is the energy of fermi level. if we add and subtract the factor egb / 2, where egb is the bulk midgap energy level, to the factors in the equation parenthesis (17) we have:  . 222 222 fsit f gbggb it gb f gbg itit qd e eee qd e e ee qdq                                     (18) as stated in the section 2, charges qox and qit have impact on the change of the transistor voltage threshold. this change can be expressed by correction potential nt [6]: [ ( )].ox it nt ox it s f ox ox q q q n d c c         (19) in the nqs mos model, the equations (4)-(6) are modified in a way to include correction potential nt. eqn. (6) in a modified form with included correction potential is: 2 2 1 1 exp( / ) 1 exp(2 / ) ( ) 1.sy t fy t gb fb sy nt sy nt t v v v v v                         (20) 170 t. pešić-brđanin for determining surface potential sy, two identical diode circuits are used, as shown in fig. 3(b). in the nqs soi model, for a symmetrical fd dg soi transistor, the equation for surface potential is modified in a way to include nt in the following way: 1 11 1 2 2 1 12 (2 ) / / // / 1 1 1 ( ) ( ) ( ) ( ) .f ds t s t s tb t b t gf fbf nt s gf fbb nt b bv v v vv v t t s b v v v v v e e e v e e                               (21) the parameter b, which appears in the equation (21), can have the value b = 0 for the source end of the channel and b = 1 for the drain end of the channel (in accordance with the equations (9) and (10)). however, the main problem in modelling of trapped charges with (21) is the fact that the distribution of surface potential in the channel depends not only on gate voltage, but also on drain voltage vds due to split of quasi fermi levels [19]. it means that the concentration qit will change along the channel, even for the constant nit. the impact of the changeable charge qit along the channel can be modelled with a modified value of the parameter b  (0,1). in the equation (21) it is calculated with in advance known value, and it is possible with the fine tuning [28] to accomplish better match of the model results with the results of 2d tcad numeric simulator silvaco atlas [29]. the equation (21) can also be solved with auxiliary diode circuits (fig. 7) with: 2 2 2 2 2 1 1 ( ) ,ch si ch si s gf fbf nt sx gf fbb nt sx t si si qn t qn t i v v v v v                               (22) ,exp1 2 /)2( 1                   sit sichvbv s v tnq ei tdsfx   (23) .exp1 2 2          sit sich s v tnq i  (24) the surface potential s from the diode circuit in fig. 7 represents the equation solution (21) for any combination of voltage variables vds and vgs. 5. simulation results and discussion the ionizing radiation has the effects on the changes of the electric characteristics of the transistor. in the paper, the approaches described in the section 3 are used for the simulation of electric characteristics of the transistor and the results are compared with numerical results. spice modeling of ionizing radiation effects in cmos devices 171 5.1. modeling of nox and dit effects in mos transistor including of the effects nox and dit in the nqs mos transistor model is made by incorporation of the correctional potential nt in the surface potential equation (eqn. 20). as already stated, with diode circuits as in fig. 4, by using mathematical apparatus available in the spice, the boundary surface potentials are acquired, and based on them the equivalent line is solved (fig. 3). in this paper, the equivalent line is divided on 10 equal segments. fig. 8 shows the acquired surface potentials that show the impact of nox (fig. 8(a)) and the impact of the interface trapped charges through dit on the surface potential value. the results acquired with diode circuits are shown with solid line, while the numerical results are shown with open circles. a solid compliance of the results confirms the efficiency of the diode circuit as a new method for solving iterative relations (21). as it can be seen on the figure, the surface potential is changed for constant negative voltage shift with the increase of nox, while dit = 0. in the case of the increase of dit while nox = 0, the voltage shift of the surface potential will depend on its value due to the dynamic charge contribution on sio2-si interface. namely, the interface charges have the energy inside forbidden zone. interface trapped charges with energies above intrinsic energy level ei behave as acceptor-like charges, while all interface trapped charges with energies below intrinsic energy level behave as donor-like charges, which is experimentally verified [2,30,31]. fig. 8 surface potential versus gate voltage dependence for different values of nox at dit = 0 (a) and for different values of dit at nox = 0 (b) obtained from spice simalation of proposed model (solid line) and tcad numerical results (open circles) for mos transistor with tox = 5 nm and nch = 410 17 cm 3 fig. 9 shows the transfer characteristics of mos obtained from the spice and compared with tcad numerical results, which shows solid compliance of the results of the applied method in nqs mos model with the tcad numerical results. it is important to state that in [2] is used the same expression for correctional potential due to the effects of ionizing radiation, by using voltage-controlled voltage source (vcvs) with voltage: )(),,,( sitoxsbgbdf fdnvvfv  (25) 172 t. pešić-brđanin and which is series connected to transistor gate, for which some of standard models are used (for example, bsim model). for determining vdf = nt, respectively solving (19) the authors used the non-iterative algorithm inside the verilog-a model [2], while in our method the iterative equation for determining the surface potential was solved in a physical way, with diode subcircuits. fig. 9 transfer characteristics id(vgs) for different values of nox at dit = 0 (a) and for different values of dit at nox = 0 (b) obtained from spice simalation of proposed model (solid line) and tcad numerical results (open circles) 5.2. modeling of nox and dit effects in finfet with the scaling of the device dimensions, conventional transistors reached its limits, so new technological structures for future generations of integrated circuits are emerging. such structure is fully-depleted floating-body (fin) multi-gate fet (finfet) [32]. however, recently it has been shown that finfet technology has rapid rate of aging, so that the degradation on finfet exceeds the degradation of the planar technology node by higher stress voltage and longer time [33]. therefore, the modelling of ionizing radiation effects in these structures is important. in the standard bsim.cmg model [34] for finfet, however, there is only fitting parameter cit (interface trap capacitance parameter) in sub-threshold region [35], while it does not have a possibility for user-defined input of oxide trapped charges. fig. 10 shows a schematic presentation of n-type finfet analysed in this paper (with the following parameters l = 0.9 m, tox = 5 nm, tsi = 20 nm, nch = 2.410 18 cm 3 and nd = 10 20 cm 3 ). fig. 10 schematic representation of n-type finfet spice modeling of ionizing radiation effects in cmos devices 173 fig. 11 shows the output characteristics of transistor obtained by using tcad numerical results, bsim.cmg model which parameters are acquired by fitting, and modified nqs soi model. in order to simplify the tuning of the parameters of bsim.cmg model, a simulate structure has a long channel and the thickness of oxide gate and silicon fin, so the effects of a short channel can be neglected, and the silicon fin is fully depleted [28,36]. the same parameter set is used for p-type finfet, with the fact that the fin film has the opposite doping (n-type fin film). in the absence of the ionizing radiation effects, the compliance of results of different models is shown [28]. fig. 11 the output characteristics of n and p-type finfets simulated for nox = 0 and dit = 0 with spice using bsim.cmg model (solid line), nqs soi model (dashed line) and tcad simulator silvaco atlas (open circles) modeling of nox and dit effects by using auxiliary diode subcircuits (ads) for solving surface potential equations (21) is possible in two ways: by using nqs soi model (time consuming), or as shown in [2,6], for determining surface potential as control voltage of vcvs for producing vdf = nt = f (vgb, vsb, nox, dit). this vcvs is connected in series with gate node of bsim.cmg model, as shown in fig. 12. second approach of modelling the ionizing radiation effects in finfet is at time more comfortable, because the simulation execution time is shorter and there are no problems due to convergence, but due to a physical dependency the nqs soi model is more convenient, because other effects important for the operation of finfet can be easily included (for example, quantum-mechanic effects). the second approach, bsim.cmg model with ads, was used in this paper for modelling the ionizing radiation effects. 174 t. pešić-brđanin fig. 12 schematic of diode subcircuit shown together with the bsim.cmg finfet model as implemented in spice simulations to include the effects of nox and dit fig. 13 shows transfer characteristics of n and p-type finfets for different values of dit while nox = 0. fig. 14 shows transfer characteristics for different values of nox while dit = 0, and fig. 15 shows characteristics for combinations of different values of nox and dit. in figs. 14 and 15 there are no results obtained by bsim.cmg model because oxide trapped charge effect is not included in this model. all characteristics are generated for vds = 1.2v. in the bsim.cmg model, a parameter cit is determined for given dit. parameter b, which appears in the equation (21), was used with value b = 0.05, for the reason previously explained in section 4. all stated characteristics show good match of suggested approaches with tcad numerical results [28,37]. fig. 13 transfer characteristics id(vgs) for different values of dit at nox = 0 spice modeling of ionizing radiation effects in cmos devices 175 fig. 14 transfer characteristics id(vgs) for different values of nox at dit = 0 fig. 15 transfer characteristics id(vgs) for combined influence of nox and dit for n-type finfet fig. 16 shows changes of threshold voltages for n and p-type finfets after ionizing radiation, obtained from tcad and proposed method. the constant current method is used for threshold voltage extraction [28,38], with i'd = 100 na/m. the impact of this ionizing radiation effect is also experimentally confirmed [39]. 176 t. pešić-brđanin fig. 16 theshold voltages vth for p and n-type finfet as function of nox and dit. 6. conclusion the modelling of ionizing radiation effects for cmos devices is presented in this paper. it is shown how surface potential equations can be modified with correctional potential, which is a result of existence of oxide charges and interface trapped charges. auxiliary diode circuits were used for determining modified surface potentials, while for obtaining electric characteristics of devices, two approaches were used, previously developed non-stationary models for cmos devices and, second approach, vcvs (with controlled voltage obtained by diode circuits) in series with gate node of standard models. in comparison with tcad numerical simulations, the efficiency of suggested approaches for prediction of impacts of dynamic effects of both oxide and interface trapped charges on electrical characteristics of devices is shown. references [1] n. s. saks and m. g. ancona, "generation of interface states by ionizing radiation at 80k measured by charge pumping and subthreshold slope techniques," ieee trans. on nucl. sci., vol. 34, pp. 1348-1354, 1987. [2] i. esqueda, h. barnaby, "a defect-based compact modeling approach for the reliability of cmos devices and integrated circuits," solid-state circuits, vol. 91, pp. 81-86, 2014. [3] v. huard, cr. parthasarathy, a. guerin, e. pion, "cmos device design in reliability approach in advanced nodes," ieee irps conference, pp. 624-633, 2009. [4] v. huard, "two independent components modeling for negative bias temperature instability," ieee irps conference, pp. 32-42, 2010. [5] a.v. sogoyan, a.s. artamonov, a.y. nikiforov, d.v. boychenko, "method for integrated circuits total ionizing dose hardness testing based on combined gammaand x-ray irradiation," facta universitatis, series: electronics and energetics, vol. 27, no. 3, pp. 329-338, 2014. spice modeling of ionizing radiation effects in cmos devices 177 [6] h.j. barnaby, m.l. mclain, i.s. esqueda, v. xiao jie, "modeling ionizing radiation effects in solid state materials and cmos devices," ieee trans. on circuits and systems i, vol. 56, pp. 1870-1833, 2009. [7] d. boychenko, o. kalashnikov, a. nikiforov, a. ulanova, d. bobrovsky, p. nekrasov, “total ionizing dose effects and radiation testing,” facta universitatis, series: electronics and energetics, vol. 28, no. 1, pp. 153-164, 2015. [8] t.p. ma and p.v. dressendorfer, ionizing radiation effects in mos devices and circuits, new york: wiley, 1989. [9] m.m. pejovic, "p-channel mosfet as a sensor and dosimeter of ionizing radiation," facta universitatis, series: electronics and energetics, vol. 29, no. 4, pp. 509-541, 2016. [10] t. grasser, b. kacter, w. goes, t. aichinger, "a twostage model for negative bias temperature instability," ieee irps conference, pp. 33-44, 2009. [11] j.p. campbell, p.m. lenahan, a.t. krishnan, "nbti: an atomic-scale defect perspective," ieee irps conference, pp. 442-447, 2006. [12] w. wang, s. yang, s. bhardwaj, s. vrudhula, f. liu, y. cao, "the impact of nbti effect on combinational circuit: modeling, simulation and analysis," ieee trans. on vlsi syst. vol. 18, pp. 173– 83, 2010. [13] t. pešić, n. janković, "a compact non-quasi-static mosfet model based on the equivalent nonlinear transmission line", ieee trans. on computer-aided-design of integrated circuits and systems, vol. 24, pp. 1550-1561, 2005. [14] n. janković, t. pešić, "non-quasi-static physics based circuit model of fully-depleted double-gate soi mosfet", solid-state electronics, vol. 49, pp. 1086-1089, 2005. [15] g. a. ausman and f. b. mclean, "electron-hole pair creation energy in sio2," appl. phys. lett., vol. 26, pp. 173-177, 1975. [16] f. b. mclean and t. r. oldham, "basic mechanisms of radiation effects in electronic materials and devices," harry diamond laboratories technical report, vol. hdl-tr, pp. 2129, 1987. [17] esko mikkola, "hierarchical simulation method for total ionizing dose radiation effects on cmos mixed signal circuits", doctorate thesis, university of arizona, 2008. [18] f. b. mclean, "a framework for understanding radiation-induced interface states in sio2 mos structures," ieee trans. on nucl. sci., vol. 27, no. 6, pp. 1651-1657, dec. 1980. [19] s. m. sze, semiconductor devices, physics and technology, wiley, new york, 2008. [20] a.s. porret, j.-m. sallese, c. enz, "a compact non-quasi-static extension of a charge-based mos model," ieee trans. on electron devices, vol. 48, pp. 1647-1654, 2001. [21] m. miyake et al., "hisim-igbt: a compact si-igbt model for power electronic circuit design," in ieee trans. on electron devices, vol. 60, no. 2, pp. 571-579, feb. 2013. [22] g. gildenblat et al., "psp: an advanced surface-potential-based mosfet model for circuit simulation," in ieee trans. on electron devices, vol. 53, no. 9, pp. 1979-1993, sept. 2006. [23] j. r. brews, "a charge-sheet model of the mosfet", solid-state electronics, vol. 21, pp. 345-355, 1978. [24] f. van de wiele, "a long channel mosfet model," solid-state electronics, vol. 22, no. 12, pp. 991997, 1979. [25] m. miura-mattausch, u. feldman, a. rahm, m. bollu, d. savignac, "unified complete mosfet model for analysis of digital and analog circuits", ieee trans. on computer-aided design of integrated circuits and systems, vol. 15, pp. 1-7, 1996. [26] j. sleight, r. rios, "a continuous compact mosfet model for fullyand partially-depleted soi devices", ieee trans. on electron devices, vol. 45, pp. 821-825, 1998. [27] s. bolouki, m. maddah, a. afzali-kusha, m. el nokali, "a unified i-v model for pd/fd soi mosfets with a compact model for floating body effects", solid-state electronics, vol. 47, pp. 19091915, 2003. [28] nebojsa jankovic, tatjana pesic-brdjanin, "spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate finfets", springer journal of computational electronics, vol. 14, no. 3, pp. 844-851, 2015. [29] silvaco atlas user's manual, http://www.silvaco.com, 2010. [30] ch helms, eh poindexter, "the silicon–silicon-dioxide system: its microstructure and imperfections," rep progr phys., vol. 57, pp. 791-852, 1994. [31] nh thoan, k. keunen, vv. afanas’ev, a. stesmans, "interface state energy distribution and pb defects at si(110)/sio2 interfaces: comparison to (111) and (100) silicon orientations," journal of appl. phys., 2011; 109:013710. 178 t. pešić-brđanin [32] j.-p. colinge (ed.), finfets and other multi-gate transistors, springer, 2008. [33] h. kukner, p. weckx, p. raghavan, b. kaczer, f. catthoor, lauwereins r. van der perre, g. groeseneken, "bti reliability from planar to finfet nodes," in proc. of the 3rd workshop on manufacturable and dependable multicore architectures at nanoscale (median'14), pp.11-14, 2014. [34] n. paydavosi, s. venugopalan, y.s. chauhan, j.p. duarte, s. jandhyala, a.m. niknejad, c.c. hu, "bsim-spice models enable finfet and utb ic designs," ieee access, vol. 1, pp. 201-215, 2013. [35] s. yao, t.h. morshed, d.d. lu, s. venugopalan, w. xiong, c.r. cleavelin, a. m. niknejad, c. hu, "global parameter extraction for a multi-gate mosfets compact model," in proc. of the ieee international conference on microelectronic test structures (icmts), pp. 194-197, march 2010. [36] h r. khan, d. mamaluy, d. vasileska, "approaching optimal characteristics of 10-nm highperformance devices: a quantum transport simulation study of si finfet," ieee trans. on electron devices, vol. 55, no. 3, pp. 743-752, march 2008. [37] t. pesic-brdjanin and nebojsa janovic, "sub-circuit model of fully-depleted double-gae finfet including the effects of oxide and interface trapped charge", in proceedings of the 16th edition of ieee region 8 eurocon conference, pp. 273-276, salamanca, spain, september 2015. [38] a. ortiz-conde, f.j. garcia sanchez, j.j. liou, a. cerdeira, m. estrada, y. yue, "a review of recent mosfet threshold voltage extraction methods," microelectronics reliability, vol. 42, pp. 583-596, 2002. [39] yang-kyu choi, daewon ha, e. snow, j. bokor and tsu-jae king, "reliability study of cmos finfets," in proc. of the ieee international electron devices meeting, 2003. iedm '03, washington, dc, usa, 2003, pp. 7.6.1-7.6.4. 12849 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 71 88 https://doi.org/10.2298/fuee2501071m © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the estimation of channel state information for multi-user lte systems subhra surochita mishra, jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india orcid ids: subhra surochita mishra https://orcid.org/0000-0003-1671-385x jibendu sekhar roy https://orcid.org/0000-0002-3571-2708 abstract. the single carrier frequency division multiple access (sc-fdma) at the receiver side has a very low power consumption and is considered as the technique for uplink in long-term evolution (lte). the objective of this paper is to exploit the channel state information (csi) at the receiver end and then fed back to the transmitter end, until the channel gains in both links are highly correlated or reciprocal. in the uplink channel multiple independent receivers transmit to the enb in same time-frequency resource. in the downlink channel the enb transmits data packets to multiple independent user end (ue) in same time-frequency resource. a joint processing is carried out at enb end called precoding which requires the knowledge of csi at transmitting end. exploiting such channel information makes it possible to increase the channel capacity, improve error performance, and at the same time reduce hardware complexity. here the time division duplexing (tdd) systems are taken because forward and reverse channels tend to be reciprocal. the performance of tdd-based duplex model for multi-user let-advanced (lte-a) system is observed for vehicular, pedestrian and typical urban (tu) channel models. in uplink, the obtained bit error rate (ber) at 20 db signal-to-noise ratio (snr) for extended pedestrian a (epa) model is 0.0503 at 5 hz which is better compared to 0.0664 for extended typical urban (etu) model at 70 hz and 0.0625 for extended vehicular a (eva) model at 70 hz. but in downlink, the etu model achieved a ber of 0.0391 at 70 hz compared to 0.0465 for eva model at 70 hz and 0.0451 for epa model at 5 hz. the system model performs better for mse obtained is -19.5640 db for epa at 5 hz in both uplink and downlink. key words: channel estimation, lte, precoding, channel state information, tdd received july 14, 2024; revised november 21, 2024; accepted november 22, 2024 corresponding author: jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india e-mail: drjsroy@kiit.ac.in https://orcid.org/0000-0003-1671-385x https://orcid.org/0000-0002-3571-2708 72 s. s. mishra, j. s. roy 1. introduction and related research work the introduction of lte is aimed at expanding the utran (universal terrestrial radio access network). its development is aimed at achieving the 4g wireless communication. but most importantly, the early objectives [1, 2] for lte were the required continuity in competition with 3g systems (for higher data rates and superior quality of service (qos)) in addition to improved packet switching and low latency [3]. overall, lte system requirements are based on system capability, system performance with throughput, spectrum efficiency, and mobility. in the lte e-utran (evolved umts terrestrial radio access network) transmission schemes, in the uplink channel multiple independent receivers transmit to the enb in same time-frequency resource [3]. overall, the lte system requires good system capability and performances with enhanced throughput, spectrum efficiency, and mobility [4]. in orthogonal frequency division multiplexing (ofdm), the communication performance can be improved by exploiting the channel information [5]. this channel is referred as mac (multiple access channel). the radio access technique in this channel is sc-fdma, as it shows lower peak-to-average-power ratio (papr) value compared with conventional ofdm system. in the downlink channel the enb transmits data packets to multiple independent ue in same time-frequency resource. this channel is referred as bc (broadcast channel). the radio access technique in this channel is ofdm [6]. in [7 morse], the performance of sc-fdma system, under various modulation techniques is reported. in [8], for 5g networks concept of non-orthogonal multiple access (noma) to serve more number of users in that same resource block is described. then different multiplexing techniques in orthogonal multiple access with modulation schemes are studied in [9]. the improved performances of sc-fdma, using different sub-carrier mapping methods are presented in [10 asean]. for wireless system, one promising technique intelligent reflecting surfaces (irss) is used to increase the energy efficiency [11]. different models of path loss (pl) for performance and network coverage estimation are required for optimization in iot technology [12]. the performance of sc-fdma under heavily faded areas is reported in [13 aeee]. in the tdd/fdd (frequency division duplexing) systems within the 6 ghz band under the indoor corridor, to extract the components of multipath an algorithm is proposed for the channel reciprocity [14]. wireless channels characterization can be done by two aspects that are channel reciprocity and pl [15]. in the uplink the transmitters are hand-held mobile terminals driven by battery. the performance of the transmitter reduces with ofdm as the access technology due to its high papr. the lte standard introduces a dft spread orthogonal frequency division multiple accessing (ofdma) called sc-fdma as the access technology for uplink due to its lower papr value. in an effort to reduce the power consumption of the terminal, the lte uplink uses sc-fdma, because uplink transmission needs a papr that is low considering the need for higher bit rates. as the receivers (ue) are autonomous units joint processing for interference cancellation cannot be carried out at receiving end. hence, the joint processing is carried out at enb end called precoding. the precoding process requires the knowledge of csi at transmitting end. in ofdma, the spectrum is essentially divided into a series of uniform orthogonal narrowband subcarriers; with each subcarrier at 15 khz spacing and corresponding modulation symbols. for the duration of 1 symbol, the number of subcarriers is orthogonally transmitted in the frequency domain. to avoid inter carrier interference (ici) and for efficient use of the spectrum, one sub-carrier spectrum’s peak must coincide with the other sub-carrier’s zeros, hence creating zero ici. a common approach in ofdm systems like lte and 5g is to perform channel estimation in the frequency domain. several studies have focused on the estimation of channel state information for multi-user lte systems 73 frequency-domain methods, which leverage the sparsity of the channel in the frequency domain to achieve efficient and accurate estimation. this method reduces the complexity compared to time-domain estimations, especially in systems with frequency-selective fading. the paper [16] provides an overview of the emerging technologies in 5g, including advances in channel estimation techniques. the work in [17] discusses frequency-domain techniques for channel estimation in mu-mimo systems, a key technology for 5g. in contrast to frequency-domain techniques, time-domain estimation often involves using pilots or training sequences to estimate the channel impulse response. though more computationally intensive, time-domain methods can offer higher accuracy in non-frequency selective channels. this study [18] compares time-domain estimation techniques with frequency-domain methods, highlighting their strengths in certain network conditions. precoding is essential for improving the performance of multi-user mimo systems by reducing inter-user interference and maximizing the signal-to-interference-plus-noise ratio (sinr). various precoding strategies have been proposed to optimize transmission in systems like lte and 5g. linear precoding techniques, such as zero-forcing (zf) and maximum ratio transmission (mrt), are widely used because of their simplicity and effectiveness in certain interference environments. these methods typically operate in the frequency domain, allowing them to align with the characteristics of ofdm systems. the paper [19] discusses different precoding schemes for multi-user mimo systems and their application in systems like lte and 5g. the work [20] explores the use of linear precoding in large antenna arrays, relevant for next-generation mobile networks. techniques such as tomlinson-harashima precoding (thp) and block diagonalization (bd) offer potential performance improvements over linear methods but at the cost of higher computational complexity. the paper [21] discusses non-linear precoding strategies and their impact on system performance. hybrid techniques that combine time-domain and frequency-domain methods for both channel estimation and precoding have emerged to capitalize on the strengths of both approaches. these methods are particularly useful in scenarios involving dynamic channels and mixed traffic types, where a hybrid approach can adapt to varying network conditions. the paper [22] explores hybrid channel estimation and precoding strategies to improve system performance. the work in [23] surveys the hybrid precoding techniques for 5g systems, focusing on the combination of time and frequency-domain methods. lte networks continue to be the backbone of mobile communication systems worldwide. many regions, especially in developing countries, rely heavily on lte due to delayed 5g deployments or cost barriers to upgrading infrastructure. 5g networks often coexist with lte, particularly in the early phases of 5g adoption. numerous devices and applications still rely on lte technology, including internet of things (iot) systems, vehicular networks, and rural broadband services. lte systems use foundational technologies such as sc-fdma, ofdma, mimo, and advanced modulation schemes, which are also integral to 5g [24]. in the initial stages of 5g adoption, many networks are deployed in a non-standalone (nsa) configuration, where lte provides the control plane (signaling and network management), and 5g nr (new radio) handles the user plane (high-speed data transfer). in areas where 5g coverage is limited or unavailable, lte serves as a fallback network to ensure uninterrupted connectivity [25]. lte variants like lte-m and nb-iot are optimized for iot use cases, offering low-power, wide-area connectivity that complements 5g capabilities. these technologies support applications like smart metering, industrial automation, and smart agriculture, which coexist with high-speed 5g use cases. while 5g supports data-driven services, voice over lte (volte) remains the dominant standard for high-quality voice 74 s. s. mishra, j. s. roy communication. lte continues to provide voice services for 5g users through integration with ip multimedia subsystem (ims) [24, 26]. in this paper, the channel reciprocity at the receiving end is exploited by knowing the csi. the estimation of csi is done in uplink using pilot signals in the slot allocated for this purpose which is utilized by enb for post equalization for uplink and per-coding for downlink. we further provide analysis of presented method for a tdd-based duplex model for multi-user lte-a system. the paper is organized as follows: section 2 describes the system briefly used for simulation. in section 3, the proposed system model used for the estimation of csi and its mathematical background are outlined. the simulated results for mean square error (mse) and bit error rate (ber) for different multi-user systems are presented in section 4. the conclusion is presented in section 5. 2. system description sometimes only statistical channel state information may be available and it makes possible to increase channel capacity, to improve error performance, and to reduce hardware complexity. in [27] a method for channel prediction conditional generative adversarial network (cpcgan) for tdd/fdd systems is proposed. also in mmwave channels correct csi is obtained with less hardware complexity and overhead of pilot signals [28]. the irs in a tdd-mimo (multiple input multiple output) system is investigated in [29] where a deep reinforcement learning (drl) scheme is used to maximize the average downlink data transmission. but practically, the full csi is unavailable because of the feedback overhead and delay. the transmitter cannot observe the csi for a time-varying channel completely and so only statistical information can be used. the transmitter generally doesn’t have direct access to its own csi and the access is done indirectly. in a tdd system, channel reciprocity between opposite links (downlink and uplink) can be used. using the received signal from the opposite side, indirect estimation of channel is possible. the state of the channel in one direction (fig. 1) can be implicitly known from the other direction. there is an appreciable difference between their transfer times. however, if the difference relative to the coherence time is small, reciprocity can be a useful property to exploit. in general, the rf characteristics of forward channels and the reverse channels are different and by using channel reciprocity this difference can be compensated. fig. 1 reciprocity of wireless channel the channel state at the transmitter side can be obtained from the receiver feedback, as shown in fig. 2. unlike using reciprocity, this method does not require compensation for the rf difference. however, for timely channel information, the feedback delay δt should be less than the coherence time tc, that is [30] t ct = (1) the estimation of channel state information for multi-user lte systems 75 its main disadvantage is that an additional source is required to transmit feedback information. the more number of antennas are required for more feedback information. therefore, for a system with multiple antennas, the overhead delay is a critical issue. an experimental study of channel reciprocity to measure the csi in both tdd and fdd modes is presented in [31]. fig. 2 feedback process of csi 3. system model for the estimation of channel state information the time division duplex model in multi-user system includes both mac and bc with access technologies sc-fdma and ofdm respectively; both are separated in time. consider a multi-user system with number of ue served by enb per time-frequency grid is n; enb is equipped with same number of antenna elements. the block diagram of the enb for the tdd-based system is shown in figure 3. in the tdd-based frame structure the estimation slot repeats every 0.5 ms, where, six symbols for payload data; alternatively used by both references. in lte and similar systems, the sub-frame duration is 1 ms, divided into two slots of 0.5 ms each. this ensures synchronization between uplink (ul) and downlink (dl) transmissions in time division duplex (tdd) mode. a 0.5 ms duration balances the overhead for estimation slots and the slots reserved for payload data transmission. shorter duration, such as 0.25 ms, may lead to increased switching times and processing complexity, while longer durations (e.g., 1 ms) might result in inefficiencies for real-time applications and would increase overhead. the model is designed for asynchronous data transfer, most suitable for internet traffic. the number of symbols carried per sub-carrier in each symbol is one for uplink, as the sc-fdma symbol of each user maintains frequency domain orthogonality among each other whereas for downlink the number of symbols carried per sub-carrier in each symbol is n. fig. 3 functional system model of enb for tdd system 76 s. s. mishra, j. s. roy 3.1. uplink phase the symbol next to the estimation symbol is used for uplink and then every alternative symbols are used for same purpose. in this phase n numbers of ue transmit sc-fdma data packets to enb in same time-frequency resource; each data bit is spreaded over u =m /n sub-carriers and mapped in m sub-carriers using a distributive mapping function. considering n-th slot is for the uplink (1 < n < 7), let xi n(p) is the p-th element of input modulated data of i-th ue in n-th sc-fdma symbol, undergoes n-point dft spreading, mapped into m sub-carriers providing the frequency domain signal of i-th ue [32] 1 0 1 2 [ ] ( ) n n n i i i p j pk s k d x p exp nn − =  −  =        (2) where d(i)[.] is the mapping function for i-th ue and k is the sub-carrier index. the frequency domain signal undergoes m point ifft before transmission and the corresponding signal at sample time m is given by 1 0 2 [ ] [ ] m n n i i k j mk s m s k exp m − =  −   =        (3) the received signal at j-th antenna of enb is , 1 [ ] ( ) ( ) n n n n j i j i i y m h s m w m = =  + (4) where hi,j n, is the temporal impulse response of channel between i-th ue and j-th antenna of enb during n-th symbol. after the cyclic prefix is removed, the fft output at k-th sub-carrier is given as , 1 [ ] ( ) ( ) n n n n j i j i i y k h s k w k = =  + (5) here, hn i,j[k] is the gain associated with the k-th subcarrier of the channel between i-th ue and j-th antenna of enb during n-th symbol and w(k) is the frequency domain representation of additive noise. due to orthogonality maintained by mapping functions, the signal received for k-th sub-carrier is the response of any one of n users. the estimate of frequency domain signal vector is determined with zero-forcing (zf) detection technique [33] , , , 1 ,ˆ ˆ{ } { }n k n k n k k n ks h y h y−=  =  (6) where, , 1[ [ ] [ ] [ ]]n k n n n h j ny y k y k y k=   and {hn,k} is the channel matrix in frequency domain during n-th slot associated with k-th sub-carrier. 3.2. downlink phase considering n-th symbol for uplink, the (n+1)-th symbol is used for downlink where enb transmits independent data stream to n ue in same time-frequency grid. unlike uplink, the access technology for downlink is ofdm; as each downlink stream uses all the available sub-carriers, a virtual spatial multiplexing method is established and the number the estimation of channel state information for multi-user lte systems 77 of simultaneous bits transmitted per time-frequency resource is n. here interference cancellation is the major issue; as the receiver units are autonomous, pre-cancellation of interference has to be carried out at enb. to achieve optimal spectrum utilization, the reciprocity between both links is exploited providing the channel matrix for downlink for k-th sub-carrier as [34] 1, ,{c } { }n k n k hh+  (7) let en+1[k] is the transmit vector in downlink for k-th subcarrier in (n+1)-th symbol where its i-th element is the data symbol in frequency domain for k-th sub-carrier of i-th ue. the signal vector that is precoded for k-th sub-carrier is given as 1 1, 1[ ] {c } [ ]n n k np k e k+ + +=  (8) for pj n+1[k] be the j-th element of pn+1[k], the time domain signal transmitted from j-th antenna of enb is given as 1 1 1 0 2 [ ] [ ] m n n j j k j mk c m p k exp m − + + =   =      (9) the precoding scheme in equation (8) is chosen because it optimizes the system’s performance in terms of interference mitigation, adaptability to dynamic channel conditions, and computational efficiency. it ensures scalable, fair, and efficient transmission for multiple users in modern communication systems like lte and 5g. by leveraging channel state information and linear precoding, it provides an effective solution for high-capacity, low-latency, multi-user environments. compared to more complex schemes such as nonlinear precoding (e.g., tomlinson harashima precoding) or block diagonalization, the linear precoding method in equation (8) offers a good balance between computational complexity and performance [35, 36]. while these more complex methods can offer better interference cancellation, the linear precoding used here is computationally simpler and efficient, making it suitable for real-time applications where low-latency performance is required. 3.3. estimation phase the estimation quality is important for system performance; the major concern of the estimation process for mu-mimo system [37] is with the limited spectrum overhead and computational complexity, it has to cope up with issues like transmit diversity and tracking of time-varying channel parameters involved in each path. this challenge of mu-mimo estimation process can be overcome by using advanced signal processing technique [38]. in tdd based model estimation is done in uplink and is utilized for both links assuming the reciprocity between them. the estimation of the channel is done by putting reference (pilot) signal in mac during the slot allocated for that. the frequency domain received signal at j-th antenna of enb in k-th sub-carrier is [39] , 1 [ ] [ ] [ ] [ ] n j i j i i y k h k r k w k = =  + (10) 78 s. s. mishra, j. s. roy where hi,j [k] is the channel gain between i-th ue and j-th antenna of enb, ri [k] is the signal transmitted from i-th ue and w[k] is the noise associated with the path in k-th sub-carrier. in the estimation slot each ue transmits independent reference signal strings interleaved with null sub-carriers; frequency domain orthogonality is maintained among each other to combat transmit diversity problem. the i-th ue puts its reference bits in the k-th sub-carrier which is given by ( )k i p n= +  (11) where m is the number of sub-carriers present, i =1,2,…,n and p = 0,1,2,… referring reference bit bearing sub-carrier index and rest are null sub-carriers. as each sub-carrier is associated with one ue, considering k as the reference bit bearing sub-carrier index of i-th ue, the equation (10) reduces to ,[ ] [ ] [ ] [ ]j i j iy k h k r k w k=  + (12) the least-square (ls) estimate of channel gain is given as , [ ] ˆ [ ] [ ] j i j i y k h k r k = (13) the ls estimator presented in this work is applied in the frequency domain, which aligns with the ofdm modulation used in modern systems like lte and 5g. this approach leverages the structure of the frequency-domain transmission, where each subcarrier is independently estimated, allowing for efficient computation and effective handling of frequency-selective fading. while time-domain channel estimation, as discussed in [40], is a valid approach, it introduces additional complexity in terms of symbol interference and computational cost, especially in systems with large bandwidths. the frequency-domain approach provides a simpler, computationally efficient alternative that is more suited to the multi-carrier nature of the system. the estimation of complete channel transfer function (ctf) is done interpolating the information obtained in equation (5); dft-based smoothing technique is employed to remove effect of noise outside the maximum channel delay [41]. the channel matrix for k-th sub-carrier is ˆ{ }kh where each (i;j)-th entry is given by , ˆ [ ]n i jh k . this estimate is utilized in intermediate payload symbols assuming , ˆ{ } { }n k kh h= (14) 4. results and discussions for multi-user systems in this section the performance of tdd based duplex model for multi-user lte-a system is observed in the simulation. the channel considered are extended typical urban model (etu), extended vehicular a model (eva) and extended pedestrian a model (epa). based on some physical factors in the urban dense street scenarios channel modelling is done for mimo systems [42]. the estimation of csi is done in uplink using pilot signals in the slot allocated for this purpose which is utilized by enb for post equalization for uplink and per-coding for downlink. the simulation parameters are shown in table 1. the estimation of channel state information for multi-user lte systems 79 table 1 simulation specifications system parameters specifications: no. of ue 02 no. of antenna in enb 02 modulation type qpsk in uplink: air interface sc-fdma size of fft 512 mapping scheme distributive in downlink: air interface ofdm size of fft 512 cyclic prefix length 10 channel specifications: channel type etu, eva, epa max. doppler shift 5 hz, 70 hz ,300 hz r.m.s delay spread 0.356 μs the fig. 4 and fig. 5 show the mse in process of estimation and uncoded ber performances respectively of the presented duplex model with maximum doppler shift of 70 hz and 300 hz. fig. 4 mse performance with maximum doppler shift of 70 hz and 300 hz fig. 5 performance of ber with maximum doppler shift of 70 hz and 300 hz 80 s. s. mishra, j. s. roy the delay profiles for the multi-path propagation models in etu, eva, and epa are given in table 2. doppler shifts are integrated to obtain the doppler power spectral density (psd) in each path [43]. table 2 delay profiles for etu, eva, and epa the fig. 6 and fig. 7 show the uncoded ber and mse performances in process of estimation respectively of the presented duplex model by varying the number of pilots spacing for extended typical urban (etu) model at 70 hz doppler frequency. fig. 6 performance of ber of etu model at 70 hz fig. 7 mse performance of etu model at 70 hz channel maximum doppler frequency excess tap delay delay profile etu 70 hz, 300 hz [0 50 120 200 230 500 1600 2300 5000] [-0.1 -0.1 -0.1 0.0 0.0 0.0 -3.0 -5.0 -7.0] eva 5 hz, 70 hz [0 30 150 310 710 1090 1730 2510] [0.0 -1.5 -1.4 -3.6 -9.1 -7.0 -12.0 -16.9] epa 5 hz [0 30 70 90 110 190 410] [0.0 -1.0 -2.0 -3.0 -8.0 -17.2 -20.8] the estimation of channel state information for multi-user lte systems 81 the fig. 8 and fig. 9 show the uncoded ber and mse performances in process of estimation respectively of the presented duplex model by varying the number of pilots spacing for extended typical urban (etu) model at 300 hz doppler frequency. fig. 8 performance of ber of etu model at 300 hz fig. 9 mse performance of etu model at 300 hz the fig. 10 and fig. 11 show the uncoded ber and mse performances in process of estimation respectively of the presented duplex model by varying the number of pilots spacing for extended vehicular a (eva) model at 5 hz doppler frequency. 82 s. s. mishra, j. s. roy fig. 10 performance of ber of eva model at 5 hz fig. 11 mse performance of eva model at 5 hz the fig. 12 and fig. 13 show the uncoded ber and mse performances in process of estimation respectively of the presented duplex model by varying the number of pilots spacing for extended vehicular a (eva) model at 70 hz doppler frequency. the estimation of channel state information for multi-user lte systems 83 fig. 12 performance of ber of eva model at 70 hz fig. 13 mse performance of eva model at 70 hz the fig. 14 and fig. 15 show the uncoded ber and mse performances in process of estimation respectively of the presented duplex model by varying the number of pilots spacing for extended pedestrian a (epa) model at 5 hz doppler frequency. 84 s. s. mishra, j. s. roy fig. 14 performance of ber of epa model at 5 hz fig. 15 mse performance of epa model at 5 hz the estimation of channel state information for multi-user lte systems 85 the performances of multi-user systems in relation to estimation of csi are tabulated in table 3. table 3 comparison between etu, eva and epa channel models channel maximum doppler frequency pilot spacing snr (db) uplink downlink ber mse (db) ber mse (db) etu 70 hz 4 0 0.6288 1.0458 0.6895 1.0472 10 0.3188 -9.0211 0.3548 -9.0147 20 0.0664 -19.1216 0.0391 -19.0731 70 hz 8 0 0.6808 4.8732 0.7113 4.8731 10 0.4641 -5.1731 0.5046 -5.1708 20 0.1264 -14.8745 0.1109 -14.8732 300 hz 4 0 0.6260 1.6522 0.6793 1.6660 10 0.3329 -8.4119 0.3664 -8.3492 20 0.0724 -18.4800 0.0611 -17.7591 300 hz 8 0 0.6796 5.3510 0.7126 5.3579 10 0.4616 -4.5626 0.5019 -4.5328 20 0.1311 -14.5930 0.1184 -14.2921 eva 5 hz 4 0 0.6336 1.4929 0.6902 1.4929 10 0.3126 -8.5342 0.3512 -8.5341 20 0.0749 -18.4986 0.0478 -18.4987 5 hz 8 0 0.6878 5.3847 0.7191 5.3848 10 0.5193 -4.4590 0.5431 -4.4593 20 0.1647 -14.5855 0.1423 -14.5857 70 hz 4 0 0.6184 0.9230 0.6847 0.9231 10 0.3087 -9.3541 0.3451 -9.3549 20 0.0625 -19.1495 0.0465 -19.1014 70 hz 8 0 0.6757 5.1026 0.7144 5.1012 10 0.4309 -4.6363 0.4883 -4.6350 20 0.0956 -14.7204 0.0924 -14.7214 epa 5 hz 4 0 0.6348 0.2461 0.6857 0.2461 10 0.3718 -9.5800 0.4025 -9.5797 20 0.0913 -19.5640 0.0647 -19.5639 5 hz 8 0 0.6828 4.5635 0.7128 4.5634 10 0.3953 -5.4160 0.4674 -5.4161 20 0.0503 -15.4320 0.0451 -15.4323 in table 2, in etu model, the maximum doppler frequency is considered to be 70 hz and 300 hz for 4 and 8 number of users. similarly for eva model, the maximum doppler frequency is considered to be 5 hz and 70 hz for 4 and 8 number of users and for epa model the maximum doppler frequency is considered to be 5 hz for 4 and 8 number of users. the simulation results shows that in uplink, the ber at 20 db snr for epa model is 0.0503 at 5 hz which is better compared to 0.0664 for etu model at 70 hz and 0.0625 for eva model at 70 hz. but in downlink, the etu model achieved a ber of 0.0391 at 70 hz compared to 0.0465 for eva model at 70 hz and 0.0451 for epa model at 5 hz. the system model performs better for mse obtained is -19.5640 db for epa at 5 hz in both uplink and downlink. the system model performs better for mse obtained is -19.5640 db for epa at 5 hz in both uplink and downlink. 86 s. s. mishra, j. s. roy 5. conclusion in this paper, we have studied the sc-fdma, which is considered the technique for uplink in lte, and the process of precoding, which requires knowledge of the csi at the transmitting end. on the transmission end, csi may be fully or partially known. with the proposed method, exploiting such channel information makes it possible to increase channel capacity, improve error performance, and at the same time reduce hardware complexity. based on the obtained results, the performance of a tdd-based duplex model for a multi-user lte-a system is investigated. the estimation of csi is done in uplink using pilot signals in the slot allocated for this purpose, which is utilized by enb for post equalization for uplink and per-coding for downlink. therefore, the csi should be estimated at the receiver end and then fed back to the transmitter end. references [1] s. sesia, i. toufik and m. baker (edited), lte the umts long term evolution, from theory to practice, 2nd ed., wiley publishers, 2011. [2] p. humblet and a. richardson, "femtocell radio technology", airvana corporation whitepaper, may 2010. [3] utra-utran long term evolution (lte) and 3gpp system architecture evolution (sae) long term evolution of the 3gpp radio technology, technical papers, 2008. [4] y. s. cho, j. kim, w.y. yang and c.g. kang, mimo-ofdm wireless communications with matlab, john wiley & sons (asia) pte ltd, 2010. [5] a. petroni, g. scarano, r. cusani and m. biagi, "on the impact of channel state information quantization and feedback in practical ofdm implementation", ieee commun. lett., vol. 28, no. 2, pp. 278-282, feb. 2024. [6] k. h. chung, "on negative correlation bit-to-symbol(b2s) mapping for noma with correlated information sources in 5g systems", j. kiecs, vol. 15, no. 5, pp. 881-888, 2020. [7] j. s. roy and s. s. mishra, "performance of sc-fdma for lte uplink under different modulation schemes", in proceedings of the ieee international conference on mechatronics, robotics and systems engineering (morse), bali, indonesia, 2019, pp. 202-206. [8] m. vaezi, r. schober, z. ding and h. v. poor, "non-orthogonal multiple access: common myths and critical questions", ieee wireless commun., vol. 26, no. 5, pp. 174-180, oct. 2019. [9] y. cai, z. qin, f. cui, g. y. li and j. a. mccann, "modulation and multiple access for 5g networks", ieee commun. surveys tuts., vol. 20, no. 1, pp. 629-646, 2018. [10] s. s. mishra and j. s. roy, "comparison of performances between sc-fdma and ofdma systems under different sub-carrier mapping schemes",” asean eng. j., vol. 13, no. 2, pp. 19-23, may, 2023. [11] c. pan, h. ren, k. wang, j. f. kolb, m. elkashlan, m. chen, m. di renzo, y. hao, j. wang, a. l. swindlehurst, x. you and l. hanzo, "reconfigurable intelligent surfaces for 6g systems: principles, applications, and research directions", ieee comm. mag., vol. 59, no. 6, pp. 14-20, jun. 2021. [12] i. batalha, a. lopes, w. lima, y. barbosa, m. neto, f. barros and g. cavalcante, "large-scale modeling and analysis of uplink and downlink channels for lora technology in suburban environments", ieee internet things j., vol. 9, no. 23, pp. 24477-24491, dec. 2022. [13] s. s. mishra and j. s. roy, "sc-fdma uplink system in heavily faded areas with low signal-to-noise ratio", adv. electr. electron. eng., vol. 21, no. 3, pp. 206-215, june 2023. [14] h. xu, j. zhang, p. tang, l. tian, q. wang and g. liu, "an empirical study on channel reciprocity in tdd and fdd systems", ieee open j. veh. technol., vol. 5, pp. 108-124, 2024. [15] w. tang, j. wang, j. y. dai, m. di renzo, s. jin, q. cheng and t. j. cui, "on path loss and channel reciprocity of ris‐assisted wireless communications", in intelligent surfaces empowered 6g wireless network, wiley, pp.37-58, 2024. [16] a. gupta and r. k. jha, "a survey of 5g network: architecture and emerging technologies", ieee access, vol. 3, pp. 1206-1232, 2014. [17] h. zhang et al. "frequency-domain channel estimation for multi-user mimo systems," ieee trans. wirel. commun., vol. 15, no. 10, pp. 7023-7034, 2016. the estimation of channel state information for multi-user lte systems 87 [18] y. yu and w. wu, "channel estimation for mimo-ofdm systems in time domain", ieee trans. wirel. commun., vol. 3, no. 3, pp. 809-818, 2004. [19] d. gesbert, m. kountouris, r. w. heath, c. -b. chae and t. salzer, "from single-user to multi-user communications: shifting the paradigm", ieee trans. wirel. commun., vol. 7, no. 6, pp. 2093-2103, 2007. [20] j. hoydis, s. ten brink and m. debbah, "massive mimo: how many antennas do we need?", in proceedings of the 49th annual allerton conference on communication, control, and computing (allerton), monticello, il, usa, 2011, pp. 545-550. [21] h. li and j. liu, "nonlinear precoding for multi-user mimo systems," ieee trans. signal process., vol. 60, no. 6, pp. 2992-3002, 2012. [22] j. kim et al., "hybrid channel estimation and precoding for multi-user massive mimo systems", ieee trans. wirel. commun., vol. 15, no. 4, pp. 2672-2684, 2016. [23] d. lee et al., "hybrid precoding for 5g: a survey", ieee access, vol. 8, pp. 88712-88729, 2020. [24] m. deepender, u. shrivastava and j. k. verma, "a study on 5g technology and its applications in telecommunications", in proceedings of the international conference on computational performance evaluation (compe), shillong, india, 2021, pp. 365-371. [25] r. kumar, i. singh, a. alkhayyat, a. joshi, a. badhoutiya and s. singh, "5g: radio technology crafted for wireless cellular connectivity", in proceedings of the 11th international conference on computing for sustainable global development (indiacom), 2024, pp.721-726. [26] lovekesh, m. yadav and d. nandal, "exploring 5g architecture, technologies, and mobility challenges: a path to sdn-based future", in proceedings of the international conference on advanced computing & communication technologies (icacctech), 2023, pp. 551-558. [27] z. zhang, y. zhang, j. zhang and f. gao, "adversarial training-aided time-varying channel prediction for tdd/fdd systems", china commun., vol. 20, no. 6, pp. 100-115, june 2023. [28] h. xu, g. zhou, k. -k. wong, w. k. new, c. wang, c. -b. chae, r. murch, s. jin and y. zhang, "channel estimation for fas-assisted multiuser mmwave systems", ieee commun. lett., vol. 28, no. 3, pp. 632-636, march 2024. [29] f. zhao, w. chen, z. liu, j. li and q. wu, "deep reinforcement learning-based intelligent reflecting surface optimization for tdd multi-user mimo systems", ieee wirel. commun. lett., vol. 12, no. 11, pp. 1951-1955, nov. 2023. [30] d. morejón, j. montalbán, e. iradier, m. kashef hany, r. candell and p. angueira, "empirical characterization of doppler in industrial cireless channels", in proceedings of the 18th european conference on antennas and propagation (eucap), glasgow, uk, 2024, pp. 1-5. [31] l. yao, l. peng, g. li, h. fu and a. hu, "a simulation and experimental study of channel reciprocity in tdd and fdd wiretap channels", in proceedings of the ieee 19th international conference on communication technology (icct), xi'an, china, 2019, pp. 113-117. [32] n. a. moghaddam, a. maleki and a. r. sharafat, "peak-to-average power ratio reduction in lte-advanced systems using low complexity and low delay pts", iet commun., vol. 14, no. 11, pp. 1768-1772, 2020. [33] g. azarnia, a. a. sharifi and h. emami,"compressive sensing based papr reduction in ofdm systems: modified orthogonal matching pursuit approach", ict express, vol. 6, no. 4, pp. 368-371, 2020. [34] s. ramtej and s. anuradha, "on companding techniques to mitigate papr in sc-fdma systems", int. j. wirel. mob. comput., vol. 18, no. 3, pp. 295-302, 2020. [35] c. xing, m. xia, f. gao and y. -c. wu, "robust transceiver with tomlinson-harashima precoding for amplify-and-forward mimo relaying systems", ieee j. sel. areas commun., vol. 30, no. 8, pp. 1370-1382, sept. 2012. [36] y. li, m. xia, and y. -c. wu, "energy-efficient precoding for non-orthogonal multicast and unicast transmission via first-order algorithm", ieee trans. wirel. commun., vol. 18, no. 9, pp. 4590-4604, sept. 2019. [37] y. a. jawhar, k. ramli, m. a. taher, n. s. shah, s. mostafa and b. a. khalaf, "improving papr performance of filtered ofdm for 5g communications using pts", etri journal wiley, vol. 43, no. 2, pp. 209-220, 2021. [38] k. zhong, y. -c. wu and s. li, "signal detection for ofdm-based virtual mimo systems under unknown doubly selective channels, multiple interferences and phase noises", ieee trans. wirel. commun., vol. 12, no. 10, pp. 5309-5321, oct. 2013. [39] a. m. musa, r. mokhtar, r. saeed, h. alhumyani, s. a. khalek and a. y. mohamed, "distributed sc-fdma sub-carrier assignment for digital mobile satellite", alexandria eng. j. vol. 60, no. 6, pp. 4973-4980, 2021. 88 s. s. mishra, j. s. roy [40] j. chen, y. -c. wu, s. ma and t. -s. ng, "joint cfo and channel estimation for multiuser mimo-ofdm systems with optimal training sequences", ieee trans. signal process., vol. 56, no. 8, pp. 4008-4019, aug. 2008. [41] t. li, z. tong, w. zhang, y. liu and m. wang, "low-complexity papr reduction scheme selective mapping cascading improved μ law companding in co-ofdm system", wirel. pers. commun., vol. 122, no. 1, pp. 861-876, 2022. [42] h. li, c. huang, c. x. wang and j. li, "scenario classification and channel modeling for mimo communications in dense urban street scenarios", in proceedings of the 18th european conference on antennas and propagation (eucap), glasgow, uk, 2024, pp. 1-5. [43] j. bao, z. cui, y. miao, q. zhu, b. hua, k. mao and h. ni, "impact of 6g mobility on doppler characteristics of uav-to-vehicle channels", in proceedings of the 18th european conference on antennas and propagation (eucap), glasgow, uk, 2024, pp. 1-5, 2024. instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 145 160 doi: 10.2298/fuee1702145e load sharing methods for inverter-based systems in islanded microgrids  a review  augustine m. egwebe, meghdad fazeli, petar igic, paul holland electronic system design center at college of engineering, swansea university, wales abstract. this paper explores and discusses various design considerations for inverterbased systems. different load sharing techniques are presented for the integration of renewable energy sources within islanded microgrids. in off-grid connection, renewable energy sources are often configured to share power based on their rated capacity. this paper explores both conventional and dynamic load sharing interaction between distributed generation units, both in an inductive (high voltage) and resistive (low voltage) networks. load sharing based on the proper design of virtual impedance is also reviewed. key words: distributed generation, microgrids, droop control, virtual impedance, photovoltaic, renewable sources. 1. introduction the need for clean and reliable energy generation has propelled global activity in various spheres of human endeavor to develop alternative sources of energy. the provision of affordable, reliable and sustainable access to energy in different forms remains one of the key challenges of economic and social development especially in developing countries [1, 2]. while it may be practically impossible to eliminate conventional nuclear and fossil fueled steam turbines, renewable energy sources (res) offer huge prospects to ease the ever-increasing demand burden on large, centralized conventional power systems. vast reduction of greenhouse gases emission can also be achieved via res integration with the existing electricity grid networks [3]. distributed generation is a term commonly used to describe small-scale and modular power generation sources that are located close to the distribution network rather than large power stations connected to the high voltage transmission network [4, 5]. distributed generators (dg) includes small-scale fossil and renewable energy generation technologies including wind, photovoltaic, micro-hydro-turbines, biogas, geothermal, tidal, steam turbines with supplementary storage devices like fuel cells and batteries. dg therefore serves as a contrast to conventional large power stations that use a small number of largescale, frequency controlled generators; it offers enhanced and improved power quality,  received october 28, 2016 corresponding author: augustine marho egwebe electronic system design center at college of engineering, swansea university, wales (e-mail: augustine.egwebe@swansea.ac.uk) 146 a. m. egwebe, m. fazeli, p. igic, p. holland enhanced system security, mitigates against issues like blackout and gives better control over the cost of energy [6]. with distributed generation, consumers now have some scales of flexibility on their energy utilization [7]. increased penetration of green renewable energy requires high-level engineering prowess in maintaining and improving the technologies that make them effective, durable and sustainable [8]. the integration of res with the existing power network mainly involves the strategies and schemes employed via the use of technologies, processes, and advanced control protocols to balance the production and demand of electrical energy within the network. these control schemes enhance the reliability of energy supply irrespective of the intermittent nature of the renewable source (i.e. fluctuating sunshine or wind profile). they include strategies for the optimal harnessing of the available renewable power, effective energy management, power/voltage device control, intelligent control of energy transformation, islanding detection, and line faults management [7-9]. to balance generated energy with demand in modern microgrids, various renewable sources and converters are often interconnected for load sharing and complimentary energy support. renewable power generation units are also often supplemented with dispatchable resources such as energy storage systems and local auxiliary generators; where the absence of such resources can result in the malfunctioning of the inverter-based sources (ivbs) [10]. an intermediate solution to some of the problems with the integration of dg with the existing power network is the concept of the microgrid shown in fig. 1 an electrical distribution system using distributed energy resources such as generators, storage devices and controllable loads which are coordinated, when connected to the main power network or operated in islanded mode [9, 10]. in grid-connected mode, control measures are relatively easy to be implemented since the utility grid regulates voltage and frequency for loads within the microgrid; whereas in islanded mode voltage and frequency must be actively controlled for the continuous and stable performance of the network [11-13]. the microgrid, when operated in islanded mode, must be able to integrate and coordinates several energy resources with appropriate voltage-frequency control strategies. the electrical power generated from dgs must be well regulated to suit sensitive non-linear loads within the distribution level (i.e. computers, motor drives, battery chargers), without causing unregulated constraint on the generator. the control measures in dgs also aim to offer greater power quality control and low voltage ride through required for eliminating transient stability issues [14, 15]. additionally, microgrids help to reduce congestion on the utility grid, serves as uninterrupted supply for critical loads, encourage the localized generation of power on the consumer side and offer extra support regarding voltage support, demand response as well as spinning reserve via inbuilt storage devices [16]. the hierarchical control approach employed in a microgrid allows autonomously coordinated generation output from dgs and energy storage systems while ensuring the appropriate load sharing and interaction with the national grid (ng) [17]. in the absence of free generation capacity in the system due to each dg hitting their maximum generating capacity, the microgrid should be self-sustainable without violating sensitive network parameters like voltage and frequency [18]. a microgrid can connect and disconnect from the ng to enable it to operate in either grid-connected or islanded mode using the microgrid central switch shown in fig. 1. a required basic characteristic of the microgrid is seamless “islanding” and “reconnection” from/to the ng. disconnection can be as a result of grid events which include faults, voltage collapse, and blackout [8, 19]. all dgs within the microgrid must be well regulated to present peer-to-peer and plug-and-play characteristics. load sharing methods for inverter-based systems in islanded microgrids  a review 147 pv arrays small wind turbine energy storage bank domestic houses small industries local amenities e.g. hospital diesel generator mv network (10kv) microgrid central switch transformer pv arrays lv lv: low voltage mv: medium voltage mc: microsource controller mcc: microgrid central controller mcc mc mc mc mc mc fig. 1 an example of a microgrid network islanding detection of distributed generation systems, voltage regulation, protection, power quality improvement and stability of the power system network are some of the technical challenges facing dgs as they are increasingly connected to the microgrids. accurate and intelligent controller design is thus required to ensure swift interaction with connected loads and the microgrid while ensuring system stability when disconnecting from the ng in the case of fault or disturbance [20]. in this paper, a thorough survey of the core components and techniques required for the effective integration of dgs in an islanded microgrid is presented. control paradigms to facilitate the efficient load sharing, operation, and energy management of dgs in a microgrid is also presented. 2. inverter-based systems inverter-based systems (ivbs) play a vital role in the effective integration of renewables with the microgrid at a synchronized system frequency. ivbs are commonly employed for switching dc voltages from renewable sources to ac voltages supplied to the microgrid and locally connected loads [19, 21]. monitoring and control functionality are essential requirements for the power electronics interface used in ivbs so as to ensure the protection of the dg system and as well as meet the connection specifications of the ng [19]. active power, reactive power, voltage and frequency at the point of common connection are some of the critical monitoring parameters for these types of systems as shown in fig. 2. also, proper conditioning of voltage and current ensures successful control of power flow per specific power references under varying load or dg input sources. motor drives and distributed generation systems use ivbs due to their inherent advantages of adjustable power factor, low total harmonic distortion (thd), and their high efficiency. 148 a. m. egwebe, m. fazeli, p. igic, p. holland inverter gc-pr(s)gv-pr(s) power controller ll cf lfvi ii voαβ * iiαβ * vcon-αβ ii vo vo io vb io iiαβ voαβ voαβ ab c voαβ ioαβ αβ ab cαβ pwm mαβ vdc θ ÷ * +vdc fig. 2 generic inverter-based system a conventional inverter circuit consists of controllable transistorized switches, such as igbts with parallel diodes to provide a bypass path for transient currents as shown in fig. 3.a. the three-phase igbt bridge circuit operates according to the control signal (vcon) generated by the control algorithm of the controller as shown in fig. 3.b. the threephase igbt-based inverter in fig. 3 consists of six switching devices (q1 q6), which are directly controlled by pulse width modulation (pwm) signals (s1 through s6) to be on (closed) or off (open) according to a well-structured switching pattern to produce the desired output ac waveforms [23, 24]. vdc s1 q1 s3 q3 s5 q5 s4 q4 s6 q6 s2 q2 a b c van vbn vcn ia ib ic 2 vdc 2 vdc + + + reference sine-wave generator (vcon) + carrier triangular wave (sets switching frequency, fsw) + + vcon-a vcon-c vcon-b vtrig s1, s4 s3, s6 s5, s2 comparator(a) (b) fig. 3 (a) three-phase bridge inverter [22]; (b) spwm control signal generator [22] the use of pwm switching together with closed-loop voltage and current controllers produces a sinusoidal output current in phase with the grid voltage with thd aligned to grid regulations. conventional grid-mode ivbs in pv applications ensure that: (1) pv modules operate at maximum power point (mpp); (2) the injected ac current into the grid is sinusoidal, with consideration for the ieee 547 demand standards for grid connection. these standards include issues such as power quality, islanding detection mode, grounding and harmonics. one of the challenges of switching ivbs at high frequencies (2 20 khz) is the creation of high-order harmonics. thd in current and voltage can lead to low power factor, overheating of distribution system components, mechanical oscillation in generators and motors, poor performance of communication equipment, and unpredictable behavior of load sharing methods for inverter-based systems in islanded microgrids  a review 149 security protection systems [22, 23, 25]. the low-pass filter connected to the output of the inverter helps to prevent the injection of high-frequency harmonics into the ac bus [23, 25]. line frequency transformers are used for galvanic isolation when interfacing the microgrid with the ng as shown in fig. 1. sinusoidal pulse width modulation (spwm) is the simplest continuous carrier-based pwm method for generating pulses, and for switching inverter-based devices with a fundamental frequency of 50 or 60 hz. the main objectives of any modulation scheme are: (1) lower switching losses, (2) reduced thd of output current, (3) minimize computational switching time, (4) better dc bus utilization, and (5) easy digital implementation [26]. in the spwm-based system in fig. 2, the three-phase fundamental components of the ac output voltage of the inverter are given by (1) [27-31]. 0 0 0 0 0 0.5 cos( ) 0.5 cos( 120 ) 0.5 cos( 120 ) i a a dc i b b dc i c c dc v m v t v m v t v m v t            (1) where ma, mb, mc = modulation index per phase; vdc = dc link voltage; and ω0 = fundamental angular frequency of the system. by using the vector-control approach, (1) can be represented as αβ-components hence offering better tracking performance at steady state for the proportional-resonant (pr) controller as shown in (2). dci dci vmv vmv   5.0 5.0     (2) the magnitude of the ac output voltage of the dg in (2) is provided in (3) dcdci mvmmvv 5.05.0 22   (3) in (3), the fundamental component of the ac output voltage is thus controlled by controlling the inverter amplitude modulating index m. where m is defined as the ratio of the amplitude of the modulated signal to that of the carrier signal. the inverter switching process works well for 0 < m < 1 to prevent unwanted harmonic distortion [23, 32, 33]. the dc link voltage vdc of the inverter-based source must satisfy (3) to avoid pwm over modulation and to ensure the stable operation of the dg in a microgrid. however, when there is a reduction in renewable energy resource level (i.e. wind or solar irradiance level) hence decreasing vdc, m must increase to maintain vi-αβ in (3). at m = 1; a fixed vi-αβ depends solely on vdc. therefore, when designing the ivbs, consideration for the minimum dc link voltage to satisfy (3) must be ensured. the diagrammatic description of the closed-loop control scheme of each inverterbased dg in an islanded microgrid is shown in fig. 2. the direct proportional-resonant (pr) control approach can be used to simplify fig. 2 as shown in the block diagram representation in fig. 4. 150 a. m. egwebe, m. fazeli, p. igic, p. holland gv-pr(s) gc-pr(s) + + vdc ÷ * gpwm(s) * * slf + rf 1+ + io scf 1 vovo * il * il ic lc filterpwm invertercontrollers vi fig. 4 block diagram of the closed-loop inverter-based source [20, 34] in the closed-loop dg model in fig. 4, an outer voltage loop gv-pr is used to control the output voltage of the inverter. the main control objective of gv-pr is to maintain a clean and balanced dg voltage as close as possible to the given sinusoidal reference voltage so that the thd of the output voltage is minimized. the voltage reference is compared with the measured voltage in αβ-frame to produce an error signal. the error signal is fed into a pr compensator, which in turn generates the current reference signal for the inner current loop. similarly, in the inner current controller gc_pr in fig. 4, the reference current from the outer voltage loop is compared with the measured output current. the error signal is fed into a pr controller to generate the reference signal for the pwm generator. the controlled output wave from the current controller is transformed back to the abc-frame using the abc/αβ-coordinate transformation principle, to generate the reference control signal for the inverter switching devices. the bandwidth of the inner current controller is usually designed to be much faster than the outer voltage loop to achieve a fast dynamic response. in general, the voltage and current controllers are designed to provide nearly perfect sinusoidal output voltage waveforms at a nominal switching frequency and to offer good damping for the output filter of the inverter and the rejection of high-frequency disturbances. vcα ioα + vcβ ioβ vcβ ioα vcα ioβ vcα vcβ ioβ ioα p qωf s + ωf ωf s + ωf p q ω* mpp v* nqq 1 s ω0 θ v fig. 5 droop controlled power sharing for islanded dg [30] the dynamics of the control scheme depends mainly on the bandwidth of the pq controller shown in fig. 4, since the bandwidth of the current and voltage controller, are designed to be much higher than that of the pq controller [25]. the power controller block is used for accurate sharing of p and q according to the droop characteristics as shown in fig. 5 [10]. the low-pass filter with cutoff frequency wf is used to extract the average powers as shown in fig. 5. the non-ideal pr controller adopted in this paper can overcome two well-known drawbacks of conventional pi controller: (1) the inability to track a sinusoidal reference with zero steady-error, (2) poor disturbance rejection capability. this is due to the pr controller infinite gain at the fundamental frequency [35], thus reducing steady state error to zero. load sharing methods for inverter-based systems in islanded microgrids  a review 151 equation (4) shows the transfer function of the adopted practical non-ideal pr controller to achieve finite gain at the ac line frequency. 22 s2s s2 (s) oci ci ppr k k kg     (4) fig. 6 frequency response of a pr controller for kp = 0.01, ki = 1 and ωc = 1, 5, 15, 25, 50, 100 rad/s the frequency response of (4) shows a wider bandwidth around the 50 hz resonant frequency which helps to minimize any slight frequency variation due to load disturbance. the pr controller’s bandwidth can be varied with the damping factor ωc as shown in fig. 6. it can be seen that ωc has an effect on both the magnitude and phase of the controller. when choosing ωc, there has to be a compromise between the reduction of sensitivity and steady state error. 2.1. current controller design the design objective of the current controller is to have a high loop bandwidth with sufficient stability margins. it is noted from control laws that systems with greater gain margins can withstand greater changes in the systems parameters before becoming unstable in the closed loop response. when designing via frequency response analysis, the goal is to predict the closed-loop behavior from the open-loop response of the current control loop shown in fig. 4. the closed-loop transfer function of the current loop when the output current is assumed as disturbance is given in (5) [36]. feedforward terms are added to the current loop in order to decouple the αβ components of the output voltage [37]. (s)(s)(s)1 (s)(s)(s) (s) * lfpwmprc lfpwmprc l l c ggg ggg i i g     (5) where gc-pr is the pr current controller; glf is the transfer function of the lc filter respectively; gpwm(s) = 1 / (1+1.5tss) represents the pwm and computational delay with 152 a. m. egwebe, m. fazeli, p. igic, p. holland respect to the sampling period ts. by setting ωc in (4) equal to 10 rad/s, (5) can be tuned for a closed-loop bandwidth of 1 khz to give kp and ki of 12.5ω and 250ω respectively. note that the bandwidth of (5) is usually selected as one-tenth of the switching frequency. 2.2. voltage controller design the voltage controller is also based on the pr structure discussed in (4), where a generalized integrator is used to achieve a zero steady-state error. the closed-loop dynamic behavior of the dg in fig. 4 is approximated as an equivalent thevenin equation as given in (6):             ooooo o xxx prcpwmff o xxx prvprcpwm o izvgv i csbas ggrsl v csbas ggg v (s)(s) (s)(s)(s)(s)(s) * 2 * 2 (6) where ax = lfcf; bx = (rf + gpwm(s)gcpr(s))cf; cx = gpwm(s)gcpr(s)gvpr(s); gvpr(s) is the pr capacitor voltage controller; rf is the parasitic resistance of the filter inductor; go(s) is the control closed-loop system transfer function; zo(s) is the output impedance. fig. 7 shows the open-loop frequency response of the dg’s voltage loop when the output current is assumed as disturbance, the positive high gain margin (46.4 db) and phase margin (79.3 degrees) both confirm the stability of the overall system. the bandwidth of the voltage controller is tuned to be about one-fifth of the bandwidth of the current controller as shown in the closed loop frequency response in fig. 8, to give kp and ki values of 0.5ω and 7 ω respectively. fig. 7 open-loop frequency response of the dg voltage loop load sharing methods for inverter-based systems in islanded microgrids  a review 153 fig. 8 closed-loop frequency response of the dg voltage loop 2.3. virtual impedance design for p and q decoupling go(s)vo * +io vo zv(s) +zo(s) → go(s) vo * +io vo go(s)zv(s)+zo(s) fig. 9 block diagram representation of virtual impedance loop in order to ensure a stable output impedance of the dg, the output dg voltage is dropped proportionally with the output current as shown in fig. 9 and explained in (7): * ( ) ( ( ) ( ) ( ))o o o o v o ov g s v g s z s z s i   (7) the output impedance of the inverter is re-designed to mitigate the influence of control parameters and line impedance on the power-sharing accuracy around the fundamental frequency as shown in fig. 9, to share the power precisely between the distributed ivbs [34]. references [21, 34, 38, 39] proposes a design scheme to eliminate the impact of dg output impedance on the overall system dynamics; hence the virtual impedance loop was implemented for power decoupling and restraining of circulating current between dgs. a performance comparison of virtual impedance techniques used in droop-controlled islanded microgrids was presented in [40, 41]. it was noted that the virtual inductive loop helps to improve the output impedance of the inverters such that it becomes predominantly inductive thereby improving the power-sharing accuracy of the droop control algorithm. similarly, a virtual resistive loop increases the output impedance of the inverters such that it becomes more resistive. the overall effect of impedance mismatches is also reduced by 154 a. m. egwebe, m. fazeli, p. igic, p. holland the virtual resistance loop thereby improving the current sharing. a virtual resistance allows sharing of linear and nonlinear loads in microgrid applications without introducing additional losses in the network and improves the stability of the microgrid [41]. according to fig. 10, the magnitude of the ivbs output impedance at the fundamental frequency is approximately zero. this shows the effectiveness of the designed control parameter of the voltage and current loop. hence, the output impedance of the ivbs is designed to be equal to the virtual impedance around the fundamental frequency as shown in fig. 10. fig. 10 also illustrates the effect of the virtual inductance on the overall output impedance of the ivbs. as can be seen, the overall output impedance become more inductive as the virtual inductance increases. fig. 10 output impedance frequency response of the ivbs with varying virtual inductance 3. conventional load sharing schemes in an islanded microgrid load sharing without communication between the parallel dgs is the most favored option in an autonomous microgrid as the network can be complex and can span over a large geographical area [19, 42]. numerous literature has studied and presented the droop scheme so that parallel dgs can be locally controlled to deliver required active and reactive power to the microgrid network. by adopting the droop scheme, two local independent network quantities (voltage and frequency) are controlled to regulate active and reactive power with consideration for the allowable frequency and voltage deviation within the microgrid. the small-signal stability analysis of the droop scheme has also been explored in the various literature [19, 30, 43]. one major concern with the droop scheme is its sensitivity to the imbalance in the system’s closed-loop output impedance and line impedance, which can lead to poor coupling between the active and reactive power [21, 42]. load sharing methods for inverter-based systems in islanded microgrids  a review 155 the complex power delivered to the common bus in fig. 2 can be expressed as shown in (8). jqps  (8) 2 2 cos( ) cos sin( ) sin o b b o b b v v v p z z v v v q z z                  (9) where p and q are the active and reactive power delivered by the dg; vo is the ac output voltage of the dg; vb is the bus voltage; z is the magnitude of the output impedance, and θ is the phase angle of the output impedance. 3.1. active power-frequency droop scheme conventionally, the output impedance is considered to be purely inductive (i.e. z ≈ jx), hence (9) is re-written as in (10).         x v x vv q x vv p bbo bo 2 cos sin   (10) the power droop controller in fig. 5 aims to adjust the frequency and voltage difference relative to increasing load in a stable manner. in an inductive-based microgrid, the droop equation is expressed as (11) and shown in fig. 13. * * 0 0 * * ( ); ( ) p o q m p p v v n q q               (11) where ω* is the fundamental frequency; v* is the ac reference voltage; p* and q* are the reference active and reactive powers; ɸ is the power angle, p and q are the instantaneous active and reactive power of the dg. the droop gains mp and nq are calculated for a given range of frequency and voltage as shown in (12) rated q rated p q vv n p m minmaxminmax ;      rated q rated p q vv n p m minmaxminmax ;      (12) fig. 11 steady-state characteristic of conventional droop scheme 156 a. m. egwebe, m. fazeli, p. igic, p. holland equation (11) indicates that the active power of the dg is dependent on the power angle, whereas the voltage amplitude difference mainly influences the reactive power. equation (13) shows the load distribution for n-parallel connected dgs in a microgrid when (11) is adopted. nqnqq npnpp qnqnqn pmpmpm   ... ... 2211 2211 (13) 3.2. active power-voltage droop scheme it is noted in the various literature that the performance of the conventional droop control is severely affected by the resistance-to-inductance (r/x) ratio of output and the line impedance. equation (9) is given as (14) when the output impedance of the dg is resistive (i.e. z ≈ r): sin cos 2   r vv q r v r vv p bo bbo   (14) since low voltage microgrid electrical distribution networks present a high r/x ratio, the voltage amplitude is used to control active power, while reactive power is controlled by the system frequency as shown in (15). * * 0 0 * * ( ); ( ) p o o q m q q v v n p p           (15) rated p q m minmax    ; rated q p vv n minmax  3.3. virtual impedance load sharing scheme the active and reactive power can also be well autonomously controlled using the virtual impedance scheme in (16) without any requirement for additional power controller as studied in [43]. equation (16) ensures accurate load sharing between the dgs and compensates reactive power differences due to output voltage mismatches, or line impedance mismatches. in order to avoid the steady-state frequency deviation, a pll is introduced. this way, the pll adjust the phase of the inverter, and the system is controlled by a virtual resistance controlling current as in a dc electrical system. reference [44] proposes an autonomous loading sharing scheme using the virtual resistance loop and a synchronous reference frame phase-locked loop. this scheme provides for both instantaneous current sharing and fast dynamic response of the paralleled ivbs. the relationship between the ioαβ and the virtual resistance rv for n-dgs is given as (16). vnnovovo vnnovovo ririri ririri     ... ... 2211 2211 (16) the small-signal analysis shows that the output α and β axis output currents of paralleled inverters are inversely proportional to their virtual resistances since the current load sharing methods for inverter-based systems in islanded microgrids  a review 157 sharing performance is just influenced by the output impedance ratio instead of the output impedance value of the dgs [43]. 1 v i1 *(p) 2 v* i1(p) i2 (p)i2 *(p) i(p) fig. 12 characteristics of virtual impedance droop (v-p) 3.4. energy saving via dynamic load sharing reference [10] presented a dynamic load sharing scheme for photovoltaic (pv) inverter-based systems in an inductive microgrid, by using the pv array’s current vs voltage characteristics in defining an operating range for the inverter-based source. the dynamic load sharing scheme is based on the available solar power to ensure an efficient load sharing interaction with other dgs, without the need for energy support from local connected fossil-fuelled auxiliary generator and thereby providing significant energy saving compared with conventional static droop control techniques. in the dynamic loading scheme, the droop gains of the power controller in (11) are redefined for dynamic load interaction between the dgs [45] as follows: avail q dc p q v n p m      ; max  (17) where pdc-max is the maximum available power of the pv array which is deduced from the maximum power curve in fig. 13. qavail is the available reactive power that the dg can supply as defined in (18). 22 dgratedavail psq  (18) figure 14 shows the load sharing profiles of two dgs interfaced to the islanded microgrid [10]. fig. 14.b shows load sharing based on the conventional droop scheme in (11), where a drop in the available power of dg2 causes similar drop in dg1 even though it has enough available capacity. as a result, the total generation becomes less than the load, the auxiliary generator (ag) is thus triggered on to supply the shortage in supply paux. in fig. 14.c, the load is adaptively shared based on the available pv power using (17). thus, a drop in the available energy in dg2 causes a proportional drop in its contribution to pload. similarly, dg1 dynamically compensate for this drop by supplying more power. hence no extra power is required from the ag (paux ≈ 0 in fig. 14.c). 158 a. m. egwebe, m. fazeli, p. igic, p. holland ppv-rated pload pdc-max o operating points as g drops vdc-min voc c g1 fig. 13 steady-state characteristic of pv operating zone fig. 14 simulation results of two dg systems using droop-based load sharing scheme showing active power sharing (a) available solar power in pu; (b) static scheme: active power in pu (d) dynamic scheme: active power in pu. 4. conclusion a thorough review of the effective integration of inverter-based systems in islanded microgrids was presented in this paper. different control and load sharing method were discussed with respect to the output impedance of the dg, and a frequency response analysis influence of the pr controller on the performance of the dg was also presented. in the dynamic load sharing scheme presented, the droop parameters were tuned based on the available power of the dg. the dynamic load sharing scheme offers energy savings when compare to the conventional loading scheme. references [1] m. olken and a. zomers. (2014, jul.aug.) energy for all: world access to electricity. power and energy society. [2] j. c. vasquez, j.m. guerrero, m. savaghebi, j. eloy-garcia and r. teodorescu, "voltage support provided by a droop-controlled multifunctional inverter," ieee trans. ind. electronics, vol. 56, pp. 4510-4519, oct. 2009. load sharing methods for inverter-based systems in islanded microgrids  a review 159 [3] p. basak, s. chowdhury, s. halder, s. p. chowdhury, "a literature review on integration of distributed energy resources in the perspective of control, protection and stability of microgrid," renewable and sustainable energy reviews, vol. 16, pp. 5545-5556, 2012. [4] n. jenkins, r. allan, p. crossley, d. kirshen, and g. strbac, embedded generation. london: the institute of electrical engineers, 2000. [5] y. levron, j. m. guerrero and y. beck, "optimal power flow in microgrids with energy storage," ieee transactions on power systems, vol. 28, pp. 3226-3234, 2013. [6] m. milligan, b. frew, b. kirby, m. schuerger, k. clark, d. lew, p. denholm, b. zavadi, m. o’malley, and b. tsuchida, "alternatives no more: wind and solar power are mainstays of a clean, reliable, affordable grid," ieee power and energy magazine, vol. 13, pp. 78-87, 2015. [7] p. k. olulope, k. a. folly, and g. k. venayagamoorthy, "modeling and simulation of hybrid distributed generation and its impact on transient stability of power system," in proc. of the 2013 ieee international conference on industrial technology (icit), 2013, pp. 1757-1762. [8] q. fu, a. hamidi, a. nasiri, v. bhavaraju, s. b. krstic, and p. theisen, "the role of energy storage in a microgrid concept: examining the opportunities and promise of microgrids," ieee electrification magazine, vol. 1, pp. 21-29, 2013. [9] g. a. jimnez-estevez, "energy access challenge: it takes a village," ieee power and energy society trans. , vol. 12, pp. 60-69, 2014. [10] a. m. egwebe, m. fazeli, p. igic, and p. m. holland, "implementation and stability study of dynamic droop in islanded microgrids," ieee transactions on energy conversion, vol. 31, pp. 821-832, 2016. [11] j. rocabert, g. m. s. azevedo, a. luna, j. m. guerrero, j. i. candela, and p. rodrixguez, "intelligent connection agent for three-phase grid-connected microgrids," ieee trans. power electronics, vol. 26, pp. 2993-3005, oct. 2011. [12] j. y. kim, j. h. jeon, s. k. kim, c. cho, j. h. park, h. m. kim, and k. y. nam, "cooperative control strategy of energy storage system and microsources for stabilizing the microgrid during islanded operation," ieee transactions on power electronics, vol. 25, pp. 3037-3048, 2010. [13] m. fazeli, g.m. asher, c. klumpner, l. yao, "novel integration of dfig-based wind generators within microgrids," ieee trans. energy conversion, vol. 26, pp. 840-850, aug. 2011. [14] l. yun wei and k. ching-nan, "an accurate power control strategy for power-electronics-interfaced distributed generation units operating in a low-voltage multibus microgrid," ieee transactions on power electronics, vol. 24, pp. 2977-2988, 2009. [15] c. trujillo rodriguez, d. velasco de la fuente, g. garcera, e. figueres, and j. a. guacaneme moreno. trujillo rodriguez, et al., "reconfigurable control scheme for a pv microinverter working in both gridconnected and island modes," ieee trans. ind. electronics, vol. 60, pp. 1582-1595, nov. 2013. [16] l. gao, r. a. dougal, s. liu, and a. p. lotova. gao, et al., "parallel-connected solar pv system to address partial and rapidly fluctuating shadow conditions," ieee transactions on industrial electronics, vol. 56, pp. 1548-1556, 2009. [17] b. homchaudhuri and m. kumar, "market based allocation of power in smart grid," in proceedings of the 2011 american control conference, 2011, pp. 3251-3256. [18] n. s. wade, p. c. taylor, p. d. lang, and p. r. jones, "evaluating the benefits of an electrical energy storage system in a future smart grid," energy policy, vol. 38, pp. 7180-7188, 2010. [19] r. majumder, b. chaudhuri, a. ghosh, g. ledwich, and f. zare, "improvement of stability and load sharing in an autonomous microgrid using supplementary droop control loop," ieee power and energy society general meeting, pp. 1-1, jul. 2010. [20] x. wang, f. blaabjerg, and z. chen, "an improved design of virtual output impedance loop for droopcontrolled parallel three-phase voltage source inverters," in 2012 ieee energy conversion congress and exposition (ecce), 2012, pp. 2466-2473. [21] s. golestan, f. adabi, h. rastegar, and a. roshan, "load sharing between parallel inverters using effective design of output impedance," in proc. of the power engineering conference, 2008. aupec '08. australasian universities, 2008, pp. 1-5. [22] n. mohan, t. undeland, and w. robbins, power electronics: converters, applications and design. new jersey: john wiley & sons, inc., 2003. [23] a. keyhani, design of smart power grid renewable energy systems. hoboken, new jersey: john wiley and sons, 2011. [24] p. igic, "review of advanced igbt compact models dedicated to circuit simulation," facta universitatis series: electronics and energetics, vol. 27, pp. 1-12, 2014. [25] m. n. marwali, j. jin-woo, and a. keyhani, "stability analysis of load sharing control for distributed generation systems," ieee trans. energy conversion, vol. 22, pp. 737-745, sep. 2007. 160 a. m. egwebe, m. fazeli, p. igic, p. holland [26] m. trabelsi, l. ben-brahim, t. yokoyama, a. kawamura, r. kurosawa, and t. yoshino, "an improved svpwm method for multilevel inverters," in proc. of the 15th international power electronics and motion control conference (epe/pemc), 2012, pp. ls5c.1-1-ls5c.1-7. [27] v.f. pires, j.f. martins, and c. hao, "dual-inverter for grid-connected photovoltaic system: modeling and sliding mode control," sciencedirect: solar energy, vol. 86, pp. 2106-2115, jul. 2012. [28] y. mohamed and e. f. el-saadany, "adaptive decentralized droop controller to preserve power sharing stability of paralleled inverters in distributed generation microgrids," ieee trans. power electron., vol. 23, pp. 2806-2816, nov. 2008. [29] p. h. divshali, s. h. hosseinian, and m. abedi, "a novel multi-stage fuel cost minimization in a vscbased microgrid considering stability, frequency, and voltage constraints," ieee trans. power sys. , vol. 28, pp. 931-939, may 2013. [30] s. hongtao, z. fang, h. lixiang, y. xiaolong, and z. dong, "small-signal stability analysis of a microgrid operating in droop control mode," ieee ecce asia downunder (ecce asia), pp. 882-887, jun. 2013. [31] m. antchev and g. kunov, "investigation of three-phase to single-phase matrix converter," facta universitatis series: electronics and energetics, vol. 22, pp. 245-252, 2009. [32] m. liserre, r. teodorescu, and j. rodriguez, grid converter for photovoltaic and wind power systems. chichester, west sussex: john wiley & sons inc, 2011. [33] z. grbo, s. vulkovic, and e. levi, "a novel power inverter for switched reluctance motor drives," facta universitatis series: electronics and energetics, vol. 18, 2005. [34] j. c. vasquez, j. m. guerrero, m. savaghebi, j. eloy-garcia, and r. teodorescu, "modeling, analysis, and design of stationary-reference-frame droop-controlled parallel three-phase voltage source inverters," ieee transactions on industrial electronics, vol. 60, pp. 1271-1280, 2013. [35] h. cha, t. k. vu, and j. e. kim, "design and control of proportional-resonant controller based photovoltaic power conditioning system," in 2009 ieee energy conversion congress and exposition, 2009, pp. 2198-2205. [36] a. chatterjee and k. b. mohanty, "design and analysis of stationary frame pr current controller for performance improvement of grid tied pv inverters," in proc. of the ieee 6th india international conference on power electronics (iicpe), 2014, pp. 1-6. [37] f. de bosio, l. a. d. s. ribeiro, m. s. lima, f. freijedo, j. m. guerrero, and m. pastorelli, "inner current loop analysis and design based on resonant regulators for isolated microgrids," in proc. of the ieee 13th brazilian power electronics conference and 1st southern power electronics conference (cobep/spec), 2015, pp. 1-6. [38] x. wang, f. blaabjerg, and z. chen, "autonomous control of inverter-interfaced distributed generation units for harmonic current filtering and resonance damping in an islanded microgrid," ieee transactions on industry applications, vol. 50, pp. 452-461, 2014. [39] j. m. guerrero, v. luis garcia de, j. matas, m. castilla, and j. miret, "output impedance design of parallel-connected ups inverters with wireless load-sharing control," ieee transactions on industrial electronics, vol. 52, pp. 1126-1135, 2005. [40] a. micallef, m. apap, c. spiteri-staines, and j. m. guerrero, "performance comparison for virtual impedance techniques used in droop controlled islanded microgrids," in proc. of theinternational symposium on power electronics, electrical drives, automation and motion (speedam), 2016, pp. 695-700. [41] g. herong, g. xiaoqiang, and w.weiyang, "accurate power sharing control for inverter-dominated autonomous microgrid," in proc. of the 7th international power electronics and motion control conference (ipemc), 2012, pp. 368-372. [42] j.m. guerrero, j. matas, v. luis garcia de, m. castilla, and j. miret, "decentralized control for parallel operation of distributed generation inverters using resistive output impedance," ieee trans. ind. electron., vol. 54, pp. 994-1004, apr. 2007. [43] y. guan, j. c. vasquez, j. m. guerrero, and e. a. a. coelho, "small-signal modeling, analysis and testing of parallel three-phase-inverters with a novel autonomous current sharing controller," in proc. of the ieee applied power electronics conference and exposition (apec), 2015, pp. 571-578. [44] y. guan, j.c. vasquez, and j.m. guerrero, "a simple autonomous current-sharing control strategy for fast dynamic response of parallel inverters in islanded microgrids," in proc. of the ieee international energy conference (energycon), 2014, pp. 182-188. [45] d. wu, f. tang, j. m. guerrero, j. c. vasquez, g. chen, and l. sun, "autonomous active and reactive power distribution strategy in islanded microgrids," in proc. of the ieee applied power electronics conference and exposition apec 2014, 2014, pp. 2126-2131. instruction facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 543 560 doi: 10.2298/fuee1404543v lifetime aspects of wearable electronics  hans de vries philips research laboratories, eindhoven, the netherlands abstract. in the course of two european projects the endurance behavior of stretchable electronic substrates and of electronic textiles was investigated. the results have to a large extent been published already. in this work new analyses to the earlier results are presented. straightforward analytical approaches are used to describe fatigue under cyclic mechanical loading in the two technologies. for stretchable substrates the actual plastic strain upon stretching could be qualitatively evaluated to replace the engineering strain. for the textile-based substrates the bending strain was estimated. additionally, there are sub-categories within each technology which perform differently and apparently show percolation behavior. key words: stretchable electronic, electronic textile, endurance test, cyclic mechanical loading, fatigue, percolation 1. introduction during the last decade or perhaps even longer the notions of wearable electronics and smart textiles have received ever more attention. the main justification for this development is the possibility to make electronic applications that are conformable around complex shapes. one can think of monitoring human body functions where small signals need to be measured and thus the devices must be placed close to or on the skin. the application areas are amongst others in health care, wellness and leisure. but one has also a larger freedom of design in consumer and professional products, for instance lighting and automotive. in this contribution the endurance behavior of the abovementioned technologies is addressed. quite understandably, initially research and development organizations have spent most effort to the study and development of the application areas and the technologies. as for stretchable substrates with conducting tracks and components, the first investigations are from princeton university, lawrence livermore national laboratories, and john hopkins university (see references in [1]). here, we refer to the european project stella * where three technologies were investigated and demonstrator products were made [1, 2, 3]. textile-based technologies and applications were the subject of the european project received september 25, 2014 corresponding author: hans de vries philips research laboratories, high tech campus 34, 5656ae eindhoven, the netherlands (e-mail: j.w.c.de.vries@philips.com) * stella: stretchable electronics for large area applications. ist-028026, 2006–2010. 544 h. de vries place-it † . recently, an extensive review has been published on the history of smart textiles, trends and identifying the important challenges such as the manufacturing technologies and the robustness of the products [4]. of course, much more has been published on stretchable and textile-based electronics, but it is not the purpose of this paper to give a full account of the literature. an important factor that needs attention before products are introduced on the market is the reliability and the lifetime. since reliability is defined as ‘the ability / probability of a product to fulfill its intended function, under specified loading conditions, during a specified period of time’, the reliability and the lifetime requirements depend on the application. one thus has to make an inventory of the relevant stress factors that the product will be subjected to, and test them accordingly. especially when new applications, or new technologies, or new materials, or a combination of these are developed, one might encounter new stress conditions which ask for new test strategies. two examples may serve as illustration. suppose one designs an activity monitor for para medical usage or for athletes (such as to measure heartbeat, respiration frequency et cetera). the device will stretch about 5% when pulling it over the wrist; in actual use the stretch is less. this will be done ten to twenty times daily for say three hundred days per year. with a desired lifetime of three years, the product should endure up to ten thousand stretch cycles of 5%. the second case is a textile-based device that will be tightly wrapped around a limb or the body – a device for instance that is meant for skin treatments (light therapy). because in the warp and weft directions a textile is only limited stretchable (a few percent perhaps) the most important stress type is that of bending each time the device is applied. with a required lifetime of three years, the product must endure several thousand bending cycles. of course, this will also depend on the bending radius. a special feature of wearable electronic products is washability. this was also touched upon in the two referenced european projects, but indeed the scope was comparatively limited, and as far as the author is aware no results were published. apart from the fluids and detergents, obviously various mechanical stresses will be imposed on the products: bending, folding, rolling, and shock impacts. to summarize, the introduction of stretchable and textile-based electronic products goes hand in hand with additional factors that have influence on the reliability and the lifetime of these products. it will be clear that the conventional stress factors, such as temperature and humidity, still apply and must be tested for. this leads to the actual purpose of the paper, which is to address the particularities of wearable electronics that relate to reliability and lifetime. all data come from the two european projects that were referred to earlier. often a dedicated test setup had to be designed to investigate the failure modes. a couple of results on endurance tests have been published for stretchable electronics [5, 6] and structures made with woven and nonwoven textile [7, 8]. sometimes, a model description for the failure mechanism could be included. it is worth to review these earlier studies and try to further explore the possibilities of modeling the failure mechanisms. these will be rather simple models, but they are only meant to shed light on the underlying physics. thus we hope to encourage other researchers to continue in this field. † place-it: platform for large area conformable electronics by integration. ist-0248048, 2010–2013. lifetime aspects of wearable electronics 545 the main subject is the fatigue lifetime modeling of the two technologies in general. however, within each of these two there is a category which cannot be related to fatigue. instead, there are indications that the behavior of these categories should be explained in terms of percolation theory. the paper is organized as follows. in the second chapter the samples fabricated with the various technologies are briefly introduced. also the test methods and the test results are presented, including the essential results of the failure analyses. fatigue lifetime analyses are the subject of the third chapter. the above mentioned special categories will be discussed in chapter four. finally, a summary and outlook are formulated. 2. test structures, test methods, and test results as was mentioned, nearly all test structures, methods and results have been published already, and thus we will give only a brief description in this chapter. further details can be found in the referenced literature. at the end of this chapter a compilation of the available test data will be made, which will be further analyzed and discussed in the next chapter. fig. 1 meander structure of stretchable copper board and stretchable molded interconnect technologies [5]. fig. 2 design of meander and definition of parameters [5, 9, 11]. 2.1. stretchable technology for each of the three stretchable technologies basically the same test structures were used [5]. these have a meander-shaped conductor incorporated in or on the stretchable substrate. a meander-like structure allows for larger deformations of the metal conductor as it acts as a kind of spring [9]. other shapes, which have a spring-like feature in common, have been proposed and studied as well, see e.g. [10]. the second technology is called stretchable molded interconnection (smi) and uses polydimethylsiloxane structures (pdms, sylgard 186 of dow corning) [3]. here, the copper tracks have a thickness of 18 µm. the total thickness of the substrate is 1 mm. 546 h. de vries a typical layout of the samples for both technologies is shown in figure 1. the influence of the shape of the meander – the angle (), radius (r), pitch (p), and width (w), see figure 2 – on the mechanical properties [9, 11] and the endurance behavior [12, 13] has been investigated. the third technology is called stretchable polymer board (spb) and one applies screen printing of a conductive paste on a polyurethane micro fiber carrier non-woven material [2]. the paste consists of a thermoplastic polyurethane matrix filled with silvercoated flakes. in this case a horseshoe shape of track was made (for this case, in figure 2 the angle  = 0). the substrates have a thickness of about 0.27 mm. we will present and discuss the results in chapter 4. 2.2. electronic textile two basic types of textile samples were manufactured for the endurance tests. one type is made by weaving conductive yarns into a textile, mostly parallel to the warp direction [4, 7]. since light therapy is considered as a possible application, light emitting diodes (leds) are mounted on the textile on positions where the conductive yarn lies on top of the weave, the so-called floats. fig. 3 woven test sample with rows of leds [7]. the globtop is visible as the brown ring around the leds. the conductive yarns are in the warp direction (left-right). fig. 4 layout of non-woven test structure of combined stitched (red dashed lines) and embroidered conductive yarns (blue solid lines) and interconnection [8]. (black dot, see insert). the resistance is measured between a and b. in figure 3 an example of a textile with leds is depicted. the leds are electrically connected to the conductive yarns with conductive adhesive paste and this connection is reinforced by globtop around the led. typical dimensions of the textile are 85100 mm 2 . the weave is characterized by the thickness of the cotton wire which is given by the dtexnumber (mass in grams of 10,000 meter of wire) and the pitch of the weave, given in lifetime aspects of wearable electronics 547 picks per centimeter. the conductive yarn consists of 20 silver-clad copper filaments of 40 µm thickness. the bundle has a twist of about 240 turns per meter. the other type of textile test sample is made from non-woven material of about 0.6 mm thickness and size of 80150 mm 2 . conductive yarns are bundles of 34 polyamide filaments which are coated with about 1 µm silver. two different techniques were used to attach these yarns to the substrate. one is by stitching with a sewing machine. in this case an upper and an under yarn – both conductive – are stitched together. alternatively, the conductive yarn is embroidered to the top of the substrate by a separate, non-conductive yarn. this is called soutache. in the test samples both techniques were combined and the two yarns were connected by a knot as shown schematically in figure 4. one can also connect two similar yarns in this way; the essential point is to use existing methods of applying yarns and making electrical interconnections. the insert shows a detail of such interconnection. the resistance was monitored between the points a and b. for further information, see [8]. the results will be discussed separately in chapter 4. 2.3. test methods from the introduction it will have become clear that the relevant type of stress is repeated bending or stretching. thus, test setups are needed to provide such deformation in a cyclic manner to the test structures. the stretchable were mounted in test machines – either commercially available or home built – and subjected to stretching cycles of up to 20% for scband even higher for smi-technology, and 5% for the spb-samples [5, 14]. care was taken not to stretch the samples too close to the limit of maximum elongation. simultaneously, the integrity of the metallic conductors and of the electrical interconnections was monitored in order to determine the moment of failure. fig. 5 setup for cyclic bending test, showing springs to hold the textile straight, and clamp (white blocks) to move the sample up and down. fig. 6 schematic of cyclic bend test with springs, and clamp moving up and down over distance (z). the half-length of the non-rigid part is given by l. for the electronic-textile samples a dedicated bending test machine was built as described in [15]. the sample (figure 5) is held straight by springs. the central part with the leds is moved down and back again, which causes the textile substrate to bend next to the row with leds which are rigid, see figure 6. the current through the leds was recorded to observe the moment of failure in the conductive yarns or in the electrical interconnections. in the same contraption the non-woven substrates with the stitched and embroidered conductive yarns (figure 4) were put to test. here, the row with the knot548 h. de vries type of interconnections is tested. the electrical resistance of the conductive yarns was measured. the layout of the various test structures made it possible to do a number of measurements per sample in parallel. in most of the cases experiments were repeated, so that in the end a statistical evaluation of the failure data could be done. for that purpose weibull-statistics were applied. the two-parameter weibull-function is a probability distribution function described by a scale parameter () denoting its position and a shape parameter () denoting its width. the cumulative distribution function as function of time (t) is: ( ) 1 exp[ ( ) ]f t t    (1) examples of failure distributions with the 95%-confidence levels are given in figure 7 and figure 8. the slopes of the distributions are 6.4–10 for the scb-samples and 3.5–4.8 for the textile samples. these values indicate that accelerated test conditions were applied, leading to wear out failures. ‡ fig. 7 weibull failure distribution with 95%-confidence levels of scbsamples cyclically stretched to 5% () and 7.5% (). fig. 8 weibull-failure distributions with 95%-confidence levels of textile sample cyclically bent by displacing over 59 mm () and 77 mm (). 2.4. test results & failure analyses in the following paragraphs of this section the results from the endurance tests are collected. both the lifetime results and the failure analyses will be given. for each case – stretchable, textile – the cyclic lifetime is given as it was obtained for each test condition. this will be the elongation or engineering strain for the stretchable samples, and the displacement (z) imposed by the bending tool (see figure 6) for the textile-based samples. the lifetime is defined as the scale parameter of the weibull-distributions (, see equation (1)), which is thus the time or number of cycles to 63.2% failures. ‡ the failure rate decreases over time (t) for  < 1 (early failures), is constant for  = 1 (random failures), and increases for  > 1 (aging or wear-out failures). for severe or accelerated test conditions,  can have values well larger than two or three. cy cles to f ailure u n r e li a b il it y , f ( t) 100 100001000 1 5 10 50 90 99 cy cles u n r e li a b il it y , f ( t) 10000 1000000100000 1 5 10 50 90 99 lifetime aspects of wearable electronics 549 table 1 shows the results for two of the stretchable technologies. similar is listed in table 2 for the textile substrates. it should be mentioned, that after 950,000 cycles to 2.6% stretch, the smi-sample had not failed. in the same sense the textile-bending test to 35 mm displacement did not lead to complete failure, but several filaments in the bundle were broken, and so we include this result in the evaluations as were it a failure. table 1 engineering strain and observed cycles to failure for the indicated stretchable technologies. the margins are the 90%-confidence levels from the failure distributions. technology strain (%) cycles to failure reference scb 20 150±20 5 15 300±50 10 700±100 7,5 920±120 5 3200±200 2,5 45000±6500 smi 20 200±50 5 15 500±150 10 2100±800 10 2500±800 7,5 3300±300 5 16000±6000 4 100000±15000 2.6 950000: no failure table 2 displacement (z) and observed cycles to failure for textile with indicated characteristics (dtex in grams per 10,000 meter of yarn, picks/cm in number of yarns per cm). the margins are the 90%-confidence levels from the failure distributions. textile z (mm) cycles to failure reference dtex: 76 86 25000±7000 7 picks/cm: 33 77 49000±8000 59 105000±20000 35 1500000: partial failure finally, selected results from the failure analyses will be given as an illustration to reveal the failure mechanisms. this is one essential step to decide which models should be used for a description of the lifetime in the stretchable and textile substrates. in figure 9 and figure 10 for scb and in figure 11 and figure 12 for smi typical examples of the failure mode in the meandering cu-tracks of the stretchable substrates are shown. from the pictures one can derive that the failure mechanism is fatigue, caused by the mechanical cycling. from the statistical analyses (see e.g. figure 7) it followed that the cumulative distributions are near parallel to each other, which supports the conclusion that the same failure mechanism applies for all cases. 550 h. de vries fig. 9 scb-sample with fatigue deformation. the scale bar is 100 µm. fig. 10 scb-sample with fatigue crack after testing to 5% stretching. the scale bar is 200 µm. from [5]. fig. 11 micro cracks in the cu-track of smi-sample after testing to 4% stretching. the scale bar is 100 µm. from [5]. fig. 12 incomplete fatigue crack in the cu-track of smi-sample after testing to 4% stretching. the scale bar is 200 µm. as for the textile-based technology, some results of failure analyses have been published before [7], but since these are new in comparison to the polyurethane-based stretchable technologies it is useful to elaborate a little bit more here. figure 3 shows a typical layout of an electronic textile with rigid components (leds reinforced with globtop). upon bending most of the deformation takes place at the transition from the rigid to the textile parts (see figure 5 and figure 6) – and this is exactly the location where failure occurs. in figure 13 an x-ray image of a detail of the textile with led after the cyclic bend test is shown. one can see the position where the bundles of filaments are broken. next to this picture, figure 14 shows an optical image of the same part where one of the two broken conductive yarns has been pulled out of the weave. the failure site coincides with the edge of the globtop. to be complete, a cross section of such a construction proves that indeed the metallic conductor breaks right outside the edge of the rigid globtop. one can see this in figure 15 where a part of the led is shown with its lead attached to the conductive yarn in the textile. the electrical interconnection is made with conductive lifetime aspects of wearable electronics 551 adhesive, which is a mechanically weak connection. therefore globtop is applied which is also visible in the photo. the detail of figure 16 reveals a crack in the cu-filaments close to where the globtop ends. all this is evidence for fatigue as failure mechanism. fig. 13 x-ray image of led-on-textile after cyclic bend test. the two conductive yarns are broken at the edge of the rigid to textile transition. fig. 14 optical photo of led-on-textile after cyclic bend test, same as in figure 13. one of the two conductive yarns has been pulled out of the textile. fig. 15 cross section of led on textile with from top to bottom: lead / adhesive / yarn. the dark grey mass is the globtop. fig. 16 cross section showing yarn with crack close to the edge of the globtop. the statistical analyses indicate that in all test cases the conductive yarns failed because of the same mechanism: the cumulative distributions are in parallel, as one can infer from figure 8. 552 h. de vries before turning to the evaluation of the results in order to develop a model description of the failure mechanism, it may be convenient to summarize the results that were collected. cyclic endurance tests have been carried out. samples based on stretchable technologies were elongated to various levels until electrical failure occurred. similarly, samples based on electronic textile were bent at different levels. the number of cycles to failure depends on the strain level. from the failure analysis it was concluded that the failure mechanism is fatigue. 3. analyses & discussion in the analyses of below chapter, first the some basic elements that relate to fatigue will be discussed. then we will provide additional evaluations of the data that were published earlier. this leads to a close agreement with results obtained on stretchable substrates that are reported in other research. 3.1 fatigue general as we have discussed in the previous chapter, fatigue has been identified as the mechanism of failure. in so far as low-cycle fatigue is concerned, the well-known manson-coffin relation [16] is commonly used to describe the cycles to failure as function of the applied strain: ' (2 ) . 2 p c f fn     (2) p is the plastic strain range, f ’ and c are the fatigue coefficient and exponent respectively, and nf is the number of cycles. this relation strictly applies only to the situation of large strain values, where plastic strain dominates. typical values for the exponent (c) are between about -0.5 and -0.7 for most metals. a similar relation was described by basquin [17] for the fatigue stress as function of the number of repetitions, which morrow proposed to write [18]: ' (2 ) .b a f fn  (3) here, a is the fatigue strength, f ’ and b are the fatigue strength coefficient and exponent, and nf the number of cycles. values for the exponent (b) are normally in the range of 0.07 to -0.12. this latter expression is also referred to as high-cycle fatigue. morrow recognized that because stress and strain are connected through the elastic modulus (e), both equations can be combined to an expression for the total strain amplitude /2 [18]: ' '(2 ) (2 ) . 2 f b c f f fn n e      (4) it thus follows that two slopes exist in a diagram of the total strain amplitude versus the number of cycles, two slopes that describe two regimes. below about 10,000 cycles lowcycle fatigue occurs while (very) high-cycle fatigue should be found at one million cycles or more [19]. in between there is a transition region. lifetime aspects of wearable electronics 553 at several occasions in his paper on the effects of thermal stress on the cyclic durability of metals, manson points out that concentration of stress is of great importance [16]. whereas in brittle materials such concentration of stress determines the failure, this is not so in ductile materials – unless the stress is applied cyclically and plastic strain accumulates. this has eventually led to considering the plastic strain energy as the leading influence factor for fatigue [18]. later, more sophisticated approaches were proposed, as one can read in the review on prediction methods for fatigue damage [20]. with respect to wearable electronics it was recognized that even at small elongations deformation can pile up and lead to failure. by means of finite element modeling the locations of maximum stress and strain in a stretched meander structure were identified. these are the apex and the inflection point in the meander [9]. we will now use the above to analyze the lifetime data on stretchable samples in section 3.2 and similar for the electronic-textile samples in section 3.3. 3.2 lifetime modeling for stretchable technology turning to the actual data, figure 17 represents the engineering strain range versus the cycle life of the stretchable test structures. two power law curves such as equation (2) have been fitted through the data. their exponents are for the scb-data c = -0.37 and for the smi-data c = -0.32. for smi the curve was fitted through the data with the exclusion of the points at 4% and 2.6% strain. two remarks must be made to this analysis. in the first place, the data point for the smi-samples at an elongation of 2.6% does not represent a failure (see table 1) and an actual failure would thus occur after more cycles. but already there is an indication that the data point deviates from the fitted power law. this could mean that stretching to 2.6%, and perhaps already at 4%, involves mainly elastic deformation and the high-cycle regime applies. the second remark concerns the values of the exponents of the power law function. although the values are in line with other reported values of the fatigue exponent for cu-structures, and in particular for such of comparable thickness where values of -0.14 to -0.46 could be evaluated [21], one must be cautious as to the precise value of the exponents in view of the above mentioned effect of stress concentration. below it will be demonstrated what the consequences are for the analyses of the test data. in particular the work at imec [9] referenced in the previous subsection made clear that the highest deformation concentrates at the apex and the inflection points of the meandering cu-trace. in our experiments the apex is indeed the position where failure occurs (see e.g. figure 12), but no failure was observed at the inflection point. by finite element modeling the plastic strain was computed as function of the engineering strain for two pdms-materials [9]. for a correct model description of fatigue failure that takes the actual deformation into account, not the elongation as used in figure 17 is needed, but one must take the plastic strain. the data reported in [9] for the substrate material sylgard 186 was used to transform the elongation that was applied in the test (see table 1) to plastic strain. thus, the result of figure 18 is obtained which we show together with the initial analysis. the power law of equation (2) was fitted to the data of 5% engineering strain or higher, which gives an exponent of c = -0.60. this value is nearly the same as the exponent that the imec-paper reports of c = -0.59. 554 h. de vries fig. 17 engineering strain versus cycles to failure for scb() and smitechnology () [5]. for the smiseries at 2.6% the sample had not yet failed (). the dashed lines are power-law fits. fig. 18 strain versus cycles to failure of smi-test samples (same data as in figure 17). engineering strain () and plastic strain () according to [9]. the lines are explained in the text. as was explained in the introductory part of this chapter, in the case where plastic strain dominates the power law usually has an exponent in the range of -0.5 to -0.7. the above analysis with an exponent of -0.60 is thus in good agreement. moreover, also the failure analysis shows that failure is due to plastic deformation; see for instance the photos in figure 11 and figure 12. the two data points taken at 4% and 2.6% engineering strain were not included in this analysis – from 4% and below the slope of the power-law curve is less: c = -0.19 (see dotted line in figure 18), which is somewhat higher than was mentioned above for highcycle fatigue. however, since at 2.6% no failure had occurred yet, the true power law will have a still lower value than -0.19. this is a clear indication for the transition from low to high-cycle fatigue. the same procedure cannot be done for the scb-samples since no such assessment of the plastic strain has been done yet. 3.3 lifetime modeling for textile technology the textile samples were not stretched but bent, and thus a different analytical approach is required. in the test, the samples were hold straight by springs and in the center they were vertically displaced over a certain distance (z), see figure 6. it is thus now necessary to derive a relation between this displacement and the bending strain. the maximum bending strain in a beam of thickness d over a radius r is: . 2r d b  (5) the system of the textile, the conducting yarn, and the spring can be regarded as a beam which is kept fixed at one end (a), see figure 19. point a is the edge of the ledglobtop combination. for bending of a beam of length l the displacement caused by the force (f) at any location (x) is given by: 1 10 100 1,000 10,000 100,000 1,000,000 st ra in ( % ) cycles to failure (-) 0.1 1 10 100 1000 10000 100000 1000000 st ra in ( % ) cycles to failure (-) lifetime aspects of wearable electronics 555 2 (3 ). 6 fx z l x ei   (6) e is the elastic modulus and i the moment of inertia of the beam. for the strain at the constrained end of the beam (a) the radius of the curve of the beam at that point must be determined. the curvature – i.e. the inverse of the bending radius – is: " 2 3/ 2 ( ) , (1 ' ) z k x z   (7) where z’ and z” are the first and the second derivatives of the displacement (z, equation (6)). working this out, we have at point a (for x = 0, the edge of the rigid part) that the curvature is proportional to the force which is the only variable: .)0( f ei fl k  (8) fig. 19 bending of a beam of length l by a force f. the beam is fixed at point a (x = 0). fig. 20 experimentally measured forcedisplacement of textile (). calculated force from spring constant (drawn line). the next step is to evaluate the force as function of the imposed displacement. this was done is two ways. first, the force in the vertical direction and the resulting displacement of the test sample were measured (see figure 6). (note that in the actual cyclic test the sample is moved up and down by a clamp which is attached to a piston with air pressure. for this particular purpose the clamp was removed in order to only move the textile with the springs to keep it straight.) figure 20 gives the results of force versus the displacement as the open symbols. with respect to the second assessment, we must realize that the origin of the force originates from the four springs keeping the textile straight. referring again to the setup of figure 6, the displacement (z) and the angle () determine the elongation of the springs. together with the spring constant the force along the direction of the textile is obtained, which is also shown in figure 20 as the drawn line. the full expression for the force of the four springs (fsprings) and the curve-fitted relation for the measured force on the test jig (fjig) are given by the following equations: 0 5 10 15 20 25 30 35 0 20 40 60 80 100 fo rc e , f ( n ) displacement, z (mm) 556 h. de vries ,arctan, sin 4              l z l z kfsprings   (9a) .0079.00033.0 2 zzfjig  (9b) the spring constant k = 0.19 nm and the length l = 100 mm. returning to the test results of table 2, these are now complemented with the force on the textile, using equation (9b). table 3 lists the result, and so, finally, the bending strain expressed in terms of the acting force can be plotted against the cycle life, see figure 21. a power-law fit to the data yields an exponent of c = -0.41. table 3 displacement (z) and observed cycles to failure for textile (see table 2). the force (f) is calculated with equation (9b). textile z (mm) f (n) cycles to failure dtex: 76 86 23.73 25000±7000 picks/cm: 33 77 18.96 49000±8000 59 11.02 105000±20000 35 3.77 1500000 fig. 21 bending strain given as force (see table 3) versus cycle life in textile sample. the fitted line is a power-law fit. this value can be compared to the exponent that was obtained for the engineering strain of the stretchable substrates, which is in the range of -0.32 to -0.37 (see section 3.2). the difference does not seem very impressive. for the stretchable samples we were able to estimate the plastic strain, which is not yet possible for the bending of the conducting cu-yarns in the woven textile. but even if we do not know the plastic strain, we can summarize the analysis of the cyclic bend tests on electronic textile by concluding that the result gives confidence that the qualitative expression for the bending strain is correct. 1 10 100 10,000 100,000 1,000,000 10,000,000 b e n d in g st ra in , f o rc e ( n ) cycles to failure (-) lifetime aspects of wearable electronics 557 4. conductor networks in the second chapter we explained that there are some special situations. both groups of technologies contain a separate case in which the electrical conductivity evolves differently under cyclic mechanical loading than in the other cases which were treated in chapter 3. the spb-technology – based on non-woven materials with screen-printed conductors – differs from the scband smi-technologies. as was shown in the original paper [5], the resistance of the meandering tracks does not stay constant and upon failure suddenly increases, as happens in the two other technologies. rather, the resistance increases gradually, and at some point it becomes irregular. here, a typical example of a failed sample is shown in figure 22, which indicates that the screen-printed structure breaks up because of its granular structure. the resistance was recorded during the cycles and is shown per each cycle as the value at 5% elongation and at rest. figure 23 gives the resistance data which become irregular in the stretched state after about 200 cycles. fig. 22 failure mode of spb-sample after test to 5% stretching [5]. cracks are visible in the screen-printed layer. fig. 23 resistance of spb-sample under cyclic stretching from 0% (dashed line) to 5% (solid line). from [5]. the second special case is the combination of two methods to apply a conducting yarn to non-woven textile substrate, as is shown in figure 4 where a stitched and an embroidered yarn are connected by a knot. the thin silver-coating of the yarns will be damaged under mechanical loading [8] (see figure 24). initially, the conduction takes place through the coating of each individual filament and, because these are in direct contact in the bundle, there is also inter-filament conduction. when the coating is damaged, less intra-filament conduction is possible. but between the filaments a conducting resistor network may still exist. it lies at hand that the inclusion of a knot to connect two yarns further complicates the conductivity since the interconnection is formed by a clamped contact. this clamp loosens upon cyclic mechanical loading and in a clamped contact the resistance increases when the clamping force is reduced. typical data are shown in figure 25 for cyclic bending over a vertical displacement of 86 mm. at a few instances the test was interrupted, this can be seen as the decrease of the resistance at 500, 1000, 2000, and 3000 cycles. after resuming the cyclic loading the value prior to the interruptions is reached again. 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 r e si st an ce ( w ) cycles (-) 558 h. de vries fig. 24 failure mode of embroidered yarn on non-woven textile after cyclic bending. damage to the ag-coating of the filaments is visible. fig. 25 resistance of non-woven sample with knot between stitched and embroidered yarn under cyclic bending. the dashed line is explained in the text. we thus have two super positioned effects in these measurements. first, there is the background of the gradual increase of the resistance as function of the number of stretching and bending cycles. this is the interpretation of the dashed line in figure 23 for stretchable spb-substrates which reflects the sample at 0% elongation for each cycle. very tentatively, that gradual increase of the resistance is attributed to reduction of the elasticity of the substrate material which functions to keep the conducting ag-particles in tight contact. for the non-woven sample no data were taken at the exact moments that the sample was in the un-stretched state, therefore we have indicated the background with the dashed line in figure 25. the clamping force of the knot-interconnection stems from the stitching and embroidering which force loses strength. the second effect adds to the background resistance. this appears as an increasing and significant variation of the resistance during mechanical cycling which is further discussed below. in the two situations, it is very likely that the large variation of the resistance is caused by percolation. percolation theory describes the behavior of clustered elements with a certain physical functionality, such as electrical conduction (e.g. for instance [22]). one considers a network composed of sites that can be occupied by one element, with a probability p that the site is occupied. if two adjacent sites are occupied, the transport process takes place between them. in the network conduction is possible when there is at least one coherent cluster of occupied sites between the two ends of the network, i.e. the contacts to the conducting track or yarn. below the critical probability that a site is occupied – the so called percolation threshold pc – the conduction vanishes. close to this value the conduction () is described by [23]: ( ) .t cp p  (10) the value of the critical site occupancy pc and the exponent t depend on various factors, such as the dimensionality of the system. typically, one reports values of pc = 0.25–0.5 and t = 1.5–2 [22, 23, 24]. 1 10 100 1,000 10,000 100,000 0 1000 2000 3000 4000 5000 6000 r e si st an ce ( w ) cycles (-) lifetime aspects of wearable electronics 559 the elements to occupy a site in case of the two types of test structures are the agflakes of the screen printed conductor in the spb-samples, and the conducting yarns with ag-coating in the non-woven textile samples. both form a conductor network. the bottom line of this expose is that at some point the connected cluster of conducting elements reaches the percolation threshold. the probability of site occupancy approaches p = pc. even small variations in the number and strength of the bonds between the elements will then have large impact on the resistance, as one sees in figure 23 and figure 25 and which follows from equation (10). in particular in the stitched interconnection the resistance varies per bend cycle over two orders of magnitude. to summarize, under cyclic mechanical loading, the conductivity in systems made with screen-printed particles or with clamped conducting yarns decays by two mechanisms. on the one hand one has a declining clamping force that leads to gradually increasing resistance. on top of this, the electrical contacts between conducting particles and yarns become less and less in number, which leads to the formation of a percolation network with unstable conductivity. 5. summary and conclusions in this contribution no new data were presented. instead, existing results from two projects on wearable electronic applications and technologies have been reviewed and attempts have been made to refine the originally reported analyses. to this end we used analytical models to come to a qualitative description of the bending strain of conducting yarns in electronic textiles. the bending strain is proportional to the force that is used to keep the textile straight in the test. the cycle life obeys a power law with an exponent that compares well with the one found for the cycle life of the stretchable substrates. as to the stretchable substrates, for the smi-technology the engineering strain was transformed to plastic strain values using results from finite element simulations that were carried out elsewhere. as a result the power-law dependence is better in agreement with low-cycle fatigue. these evaluations show where still work needs to be done. in particular, modeling of the plastic strain that accumulates in the cyclic bend test for electronic textiles is such a topic. finally, an additional failure mechanism has been observed in clamped contacts. in some subsets of the stretchable and textile technologies, the contact force between conducting particles or between conducting yarns gradually diminishes, which might be attributed to fatigue. but eventually a conductor network evolves that behaves as a percolation network. this is also a topic that may receive further attention. acknowledgement. instead of mentioning each individually, the author would like to thank all colleagues that contributed to the stella and place-it projects and who have supplied him with additional information for this paper. co van veen’s critical reading of the text is greatly appreciated. 560 h. de vries references [1] t. löher, m. seckel, r. vieroth, c. dils, c. kallmayer, a. ostmann, r. aschenbrenner, h. reichl. stretchable electronic systems: realization and applications. proc. 11th eptc, 2009, pp 893–898. [2] b. schmied, j. guenther, c. klatt, h. kober, e. raemaekers. stella – stretchable electronics for large area applications. adv. sci. technol. 2008, vol. 60, pp 67–73. [3] f. bossuyt, t. vervust, f. axisa, j. vanfleteren. improved stretchable electronics technology for large area applications. proc. mrs spring meeting symposium, 2010, pp 1271–1277. [4] k.h. cherenack, l. van pieterson. smart textiles: challenges and opportunities. j. appl. phys. 2012, vol. 112, no 9, 091301. [5] f. bossuyt, j. guenther, t. löher, m. seckel, t. sterken, h. de vries. cyclic endurance reliability of stretchable electronic substrates. microelectronics reliability, 2011, vol. 51, pp 628–635. [6] m. jablonski, r. lucchini, f. bossuyt, t. vervust, j. vanfleteren, h. de vries, p. vean, m. gonzalez. impact of geometry on stretchable meandered interconnect uniaxial tensile extension fatigue reliability. microelectronics reliability, 2014, accepted for publication. [7] h. de vries, k.h. cherenack. endurance behavior of conductive yarns. microelectronics reliability, 2014, vol. 54, pp 327–330. [8] m. de kok, h. de vries, k. pacheco, g. van heck. reliability of conducting yarns in electronic-textile applications. textile research journal, 2014, submitted. [9] m. gonzalez, f. axisa, m. vande broucke, d. brosteaux, b. vandevelde, j. vanfleteren. design of metal interconnects for stretchable electronic circuits. microelectronics reliability, 2008, vol. 48, pp 825–832. m. gonzalez, f.axisa, f. bossuyt, y.y. hsu, b. vandevelde, j. vanfleteren. design and performance of metal conductors for stretchable electronic circuits. proc. 2nd estc, 2008, pp 371–377. [10] d.h. kim, j.a. rogers. stretchable electronics: materials strategies and devices. adv. mater. 2008, vol. 20, pp 4887–4892. [11] f. bossuyt, t. vervust, j. vanfleteren. stretchable electronics technology for large area applications: fabrication and mechanical characterization. ieee trans. comp. pack. manuf. technol. 2013, vol. 3, no. 2, pp 229–235. [12] m. jablonski, f. bossuyt, j. vanfleteren, t. vervust, h. de vries. reliability of a stretchable interconnect utilizing terminated, in-plane meandered coper conductor. microelectronics reliability, 2013, vol. 53, pp 956–963. [13] m. jablonski, r. lucchini, f. bossuyt, t. vervust, j. vanfleteren, h. de vries, p. vena, m. gonzalez. impact of geometry on stretchable meandered interconnect uniaxial tensile extension fatigue reliability. microelectronics reliability, 2014, submitted. [14] y.y. hsu, b. dimcic, m. gonzalez, f. bossuyt, j. vanfleteren, i. de wolf. reliability assessment of stretchable interconnects. proc. ieee impact, 2010, pp 1–4; polyimide-enhanced stretchable interconnects: design, fabrication, and characterization. ieee trans. electron dev. 2011, vol. 58, no. 8, pp 2680–2688. [15] h. de vries, k.h. cherenack. failure modes in textile interconnect lines. ieee electron dev. lett. 2012, vol. 33, no. 10. pp 1450–1452. [16] s.s. manson. behavior of materials under conditions of thermal stress. naca tn 2933, 1953. l.f. coffin jr. a study of the effects of cyclic thermal stresses on a ductile metal. trans. asme 1954, vol. 76, pp 931950. [17] o.h. basquin. the exponential law of endurance tests. proc. astm 1910, vol. 10, pp 625–630. [18] j.d. morrow. cyclic plastic strain energy and fatigue of metals. astm stp 1965, vol. 378, pp 45–87. [19] s.s. manson. thermal stress and low-cycle fatigue. new york: mcgraw-hill, 1966. [20] a. fatemi, l. yang. cumulative fatigue damage and life prediction theories: a survey of the state of the art for homogeneous materials. int. j. fatigue 1998, vol. 20, nr. 1, pp 9–34. [21] d. farley, y. zhou, f. askari, m. al-bassyiouni, a. dasgupta, j.f.j. caers, h. de vries. copper trace fatigue models for mechanical cycling, vibration and shock/drop of high-density pwas. microelectronics reliability 2010, vol. 50, pp 937–947 . [22] d. stauffer. introduction to percolation theory. taylor & francis,1985. [23] j.p. clerc, g. giraud, j.m. laugier, j.m. luck. the electrical conductivity of binary disordered systems, percolation clusters, fractals and related models. adv. phys. 1990, vol. 39, nr. 3, pp 191–309. [24] m. cattani, m.c. salvadori, f.s. teixeira. insulator-conductor transition: a brief theoretical review. 2009, arxiv:0903.3587. facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 195 210 https://doi.org/10.2298/fuee2401195b © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the impact of blockchain technology on the environment jelena bačević1, petar kočović2, predrag ivković3, srećko stanković4 1faculty of business economics and entrepreneurship, belgrade, serbia 2union university, nikola tesla, school for information technology and engineering, belgrade, serbia 3humber college, etobicoke, ontario, canada 4independent university of banja luka, banja luka, bosnia and herzegovina orcid ids: jelena bačević https://orcid.org/0009-0007-3671-6376 petar kočović https://orcid.org/0000-0001-8289-1385 predrag ivković https://orcid.org/0009-0001-3781-4345 srećko stanković https://orcid.org/0000-0002-1975-6946 abstract. this paper focuses on the environmental impact of blockchain technology, particularly on electricity consumption for equipment operation and cooling. during its operation, the device energy is converted into heat, which must be efficiently dispersed. additionally, the paper examines the rate of mining equipment replacement and the subsequent e-waste concerns. the impact of blockchain technology on the environment is a complex and debated topic. only the following two aspects are discussed in this paper: 1) energy consumption: (a) positive impact: blockchain technology, especially in the context of cryptocurrencies like bitcoin, has been criticized for its high energy consumption due to the consensus mechanism called proof of work (pow). however, some blockchain networks use alternative consensus mechanisms like proof of stake (pos), which is more energy-efficient, and b) negative impact: pow-based blockchains, such as bitcoin, require significant computational power, leading to high energy consumption. the environmental impact is a concern, especially if the electricity used comes from non-renewable sources. 2) mining and e-waste: (a) positive impact: blockchain technology can help in tracking the supply chain and provenance of minerals, which could reduce the use of conflict minerals and promote ethical mining practices. (b)negative impact: the mining of cryptocurrencies involves specialized hardware that becomes obsolete quickly, contributing to electronic waste (e-waste). this can have negative environmental consequences if not properly managed and recycled. the central topic of this paper is electric energy consumption and as a consequence co2 emission footprint. because of the fast growth of data centers and mining centers, consumption of electric energy has grown exponentially in the past decade. together with the consumption of electric energy, co2 emission grows dramatically. key words: blockchain, crypto-assets, e-waste, waste energy received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: jelena bačević faculty of business economics and entrepreneurship, belgrade, e-mail: jelena.bacevic@vspep.edu.rs https://orcid.org/0009-0007-3671-6376 https://orcid.org/0000-0001-8289-1385 https://orcid.org/0009-0001-3781-4345 https://orcid.org/0000-0002-1975-6946 mailto:jelena.bacevic@vspep.edu.rs 196 j. bačević, p. kočović, p. ivković, s. stanković 1. introduction over the last decade and a half, blockchain technology has emerged as a revolutionary digital tool adopted across various business domains. this technology operates as a decentralized and distributed ledger, recording every transaction and securely storing encrypted data of the entire transaction history. initially, blockchain technology could be operated through an ordinary computer, but specialized graphics cards (gpu) became necessary as it grew. today, using highly specialized devices is mandatory for working with blockchain technology. however, the widespread adoption of blockchain technology has raised several concerns, including a considerable increase in electricity consumption and e-waste generation. as the usage of blockchain technology continues to surge, these issues are becoming more severe. in 2008, nakamoto's publication of "a peer-to-peer electronic cash system" [1] had a profound impact on public interest in a new form of currency. this system allowed for the direct transfer of funds between users without the involvement of intermediaries or central banks in issuing the currency. the media extensively covered bitcoin's initial transactions and creation, which greatly contributed to its rapid adoption by users. the primary focus was on the fact that it was the first decentralized, peer-to-peer online currency with inherent value that did not rely on a central issuer. its value was solely determined by market demand and supply. [2] [3] litecoin emerged as a cryptocurrency in 2010, shortly after bitcoin. it gained unexpected popularity as a payment system over time, coinciding with the public's growing interest in bitcoin's value and market volatility. this surge in attention sparked significant media coverage and curiosity about the underlying technology. with blockchain software being open source, anyone with knowledge and interest could download and install it to build their payment systems. the coinmarketcap website regularly updates the number of new payment systems created each month (figure 1a). the pursuit of a better quality of life has resulted in humans exploiting natural resources with little consideration for the consequences. as a result, several issues have emerged that now jeopardize our well-being [4]. initially, mining cryptocurrency on standard computers consumed less electricity. however, introducing specialized devices called application-specific integrated circuits (asic) made mining more profitable and popular. each new generation of mining equipment needs more electricity and processing power for profitability [5]. it's interesting to note the discrepancies in the number of registered cryptocurrency systems depending on the source of data. for instance, while coinmarketcap.com lists 10,300 cryptocurrencies, statista.com lists only 8,685. this suggests that locating smaller cryptocurrency systems can be challenging and that the registration process may not always be dependable. however, based on rough estimations, it's reasonable to assume that approximately 9,500 cryptocurrency systems warrant analysis. to provide a comparison, the united nations only recognizes 152 official fiat currencies. [8]. certainly, let's explicitly outline the three main aspects: energy consumption, carbon footprint, and e-waste, in the context of the impact of blockchain technology on the environment. let's start with energy consumption. pow-based blockchains, such as bitcoin, require significant computational power, leading to high energy consumption. the environmental impact is a concern, especially if the electricity used comes from non-renewable sources. second, carbon footprint. the carbon footprint is a concern, especially in pow-based blockchains, as the energy-intensive mining process can result in a substantial carbon footprint, particularly when powered by non-renewable energy sources. the impact of blockchain technology on the environment 197 fig. 1a growth in the number of cryptocurrencies [6] fig. 1b growth in the number of cryptocurrencies [7] third is e-waste. the mining of cryptocurrencies involves specialized hardware that becomes obsolete quickly, contributing to electronic waste (e-waste). this can have negative environmental consequences if not properly managed and recycled. by considering these three aspects—energy consumption, carbon footprint, and ewaste—it becomes clearer how blockchain technology's environmental impact is multifaceted, with both positive and negative dimensions. it underscores the importance of adopting eco-friendly practices and sustainable solutions within the blockchain industry to mitigate potential negative environmental consequences. 2. literature overview in 2008, satoshi nakamoto [1] published the first paper on blockchain technology. the paper proposes a new technology solution that utilizes cryptography, digital signatures, and peer-to-peer networking to secure a distributed ledger. this ledger contains all records that are linked chronologically in blocks. three papers are essential in defining a methodology that accelerates block registration and reduces electricity consumption: 198 j. bačević, p. kočović, p. ivković, s. stanković 1. in their paper [9], provide an overview of the block chain technology architecture and assess its future developments. 2. the paper ‘the carbon footprint of bitcoin’, [10] analyses the consumption of electricity necessary for cryptocurrency mining equipment 3. in 2019, several papers analyzing bitcoin electricity consumption. by then, the number of asic devices and transactions had increased significantly, so the problem became visible [11]. 4. many authors [12], [13] , in their papers, analyze the problem of electronic waste in detail. 5. large number of websites have started to deal with the topic of cryptocurrencies. sucha are coinmarketcap in 2013 [14], and www.digiconomist.net , started onmarch 2014). educational and scientific institutions are actively researching the use of cryptocurrencies. the university of cambridge's cambridge centre for alternative finance (ccaf) is a prominent player in this field, closely monitoring advancements and presenting findings on blockchain technology. measuring the environmental impact of blockchain technology is a challenging task due to several inherent complexities and uncertainties. here are some of the problems associated with measuring this impact, along with considerations for how it can be measured: a) diversity of blockchains problem: there is a wide variety of blockchain networks, each with its consensus mechanisms, scalability solutions, and energy requirements. measuring the environmental impact requires accounting for this diversity measurement approach: conducting specific assessments for each blockchain network based on its unique characteristics and consensus mechanism can provide a more accurate measurement. standardized metrics may need to be developed to compare different blockchains. b) energy source variability problem: the environmental impact depends on the energy source used for mining or validating transactions. blockchains can operate on energy from renewable or non-renewable sources, leading to different carbon footprints. measurement approach: assessing the energy mix of the specific blockchain network and considering the carbon intensity of the energy sources can provide insights into its environmental impact. transparent reporting of energy sources by blockchain projects is crucial. c) dynamic nature of technology problem: blockchain technology is evolving rapidly, with changes in consensus algorithms, energy efficiency improvements, and the development of more sustainable practices. this makes it challenging to measure a moving target. measurement approach: regularly updating assessments and keeping track of technological advancements is essential. periodic reviews and revisions of measurement methodologies will be necessary to account for changes in the technology. d) incomplete data and transparency problem: some blockchain projects may not disclose key information, such as their energy consumption, making it difficult to accurately measure their environmental impact. measurement approach: encouraging transparency and standardized reporting within the blockchain industry is crucial. independent audits and verifications can help ensure the accuracy and completeness of the data provided. e) economic incentives and behavior problem: economic incentives within blockchain networks can influence miners' behavior, affecting their energy consumption and environmental impact. changes in token values and mining rewards can impact miners' decisions. the impact of blockchain technology on the environment 199 measurement approach: understanding the economic incentives and aligning them with environmental sustainability goals can be crucial. analyzing the behavior of participants in response to economic changes can help predict and measure environmental impacts. f) lack of consensus on metrics problem: there is no universal agreement on standardized metrics for measuring the environmental impact of blockchain technology. measurement approach: establishing industry-wide standards for measuring environmental impact, including metrics for energy consumption, carbon footprint, and ewaste generation, can provide a common framework for assessment. in summary, measuring the environmental impact of blockchain technology is a complex task that requires addressing the diversity of blockchains, considering energy source variability, adapting to the dynamic nature of technology, ensuring transparency, accounting for economic incentives, and establishing consensus on measurement metrics. developing standardized methodologies and encouraging industry-wide collaboration will be essential for accurate and meaningful assessments. 3. characteristics of blockchain technology bitcoin mining began in 2009 when the first bitcoin block was created. it involves verifying transactions and adding new blocks to the blockchain network. the blockchain system works by connecting blocks together in a continuous chain [15]. did you know that every time a new transaction is made in the blockchain network, it needs to be processed by a mining node? these nodes work tirelessly to combine these transactions and find the elusive 'proof of work' (pow) for the block. it's like a digital treasure hunt, and the miners who solve the puzzle first get to add the block to the chain and earn some cryptocurrency as a reward. cool, right? [1]. in the process of mining bitcoin, the initial miner successfully solves a challenging mathematical problem, referred to as proof of work (pow), and distributes the block to all the nodes on the network. the nodes then validate and incorporate the new block into their list, and the cycle repeats for the subsequent block. as a token of appreciation for their hard work, the miner who effectively completes a block is awarded bitcoin, which can be traded on cryptocurrency exchanges for a profit. since network participants invest time and energy, the process is similar to that of a miner, which is why the term "mining" has been adopted for this activity [1]. within the bitcoin network, miners engage in a competition to generate a new block, add it to the chain, and earn a bitcoin as a reward. this competition involves a computational guessing game that is deliberately designed to be challenging. only a valid proof of work (pow) can result in a new block being added to the blockchain. the miner who successfully guesses the pow completes the block and is rewarded for their efforts. all miners in the network participate in this competition, expending a significant amount of electricity to perform pow calculations. the more powerful a miner's device, the greater their likelihood of successfully creating a new block and earning a profit. the profitability of the system relies on the efficiency of a device and its electricity consumption per calculation. essentially, a machine is more cost-effective if it can perform more calculations per unit of consumed electricity. this is the fundamental operating principle of the bitcoin mining system. proof of stake (pos) is a blockchain formation system that differs from the traditional proof of work (pow) system. in pos, the participants do not compete with each other. 200 j. bačević, p. kočović, p. ivković, s. stanković instead, the system selects the computers that can create the next block in the blockchain based on the amount of currency invested as collateral. this means that the more currency a participant invests, the more likely they are to be chosen to create the next block [16]. in the ethereum system, participants are required to invest funds. the blockchain production process is determined through a random selection software. the principle is that the more funds invested, the higher the chances of producing the next blockchain. miners still need to have adequate equipment capacity. however, in this case, the power of the device is not the decisive factor. in his paper [17] states that in september 2022, ethereum switched from pow, to pos, reducing the electricity consumption by 99.84%. apart from the two commonly used methods, several other methods such as proof of burn (pob), proof of authority (poa), practical byzantine fault tolerance (pbft) and proof of capacity (poc) have been used less frequently in previous works [9]. pos blockchain requires less electricity for operation than other models. there are multiple ways in which blockchain can be organized. a public blockchain provides unfettered access to its network for anyone with a computer or mobile device, without necessitating any permission. the consensus mechanism, whether proof of work (pow) or proof of stake (pos), is utilized to incorporate novel entries in the network information. every node can partake in the consensus procedure in a public blockchain. with an effortless process for adding a new member, expanding this form of blockchain organization is a breeze. due to the increasing number of members and information exchange, transaction confirmation slows down data processing [18]. on a public blockchain network, transactions can be viewed by anyone due to their transparent nature. the decentralized storage of records across numerous participants' computers ensures that transactions cannot be tampered with. the effectiveness of the system is directly proportional to the number of participants and transactions managed by the protocol. nevertheless, privacy concerns arise with public blockchain technology as the data being shared needs to be safeguarded. a private blockchain is a type of blockchain network that is closed and managed by a central authority. the central authority controls the access of participants to the network, and grants access rights based on specific authorizations. access to the private blockchain is limited, ensuring secure and controlled access for authorized participants only. a private blockchain is governed by a sole organization that holds full control and makes the ultimate decision on consensus. the central authority in charge of the business manages the visibility of information for users. nevertheless, private blockchains pose a challenge in terms of transaction immutability, since records can be modified due to the restricted number of participants. despite this, the overall efficiency and speed of private blockchain systems tend to surpass those of public ones, given the lower number of users and transactions. private blockchains have limited expansion due to reliance on centralized network management. all participants must be recognized and may face restrictions on system usage [9]. a hybrid blockchain is a combination of both private and public blockchains, where a new member needs approval from all other participants to join. hybrid blockchains are gaining popularity among experts, who predict a promising future for this type of blockchain. a hybrid blockchain is a type of blockchain that involves multiple institutions and is partially decentralized. this means that only a select few nodes are able to establish a consensus. the growth and inclusion of new members is dependent on a central organizer, but individual users have free and open access to publicly available data. [9] the impact of blockchain technology on the environment 201 4. application area for blockchain blockchain technology was first created to support cryptocurrencies, but its potential for business applications was quickly realized. the technology is built on three fundamental components: 1) private key cryptography, 2) peer-to-peer networks, and 3) the blockchains protocol [19]. as a distributed computing technology, blockchain is decentralized, transparent, immutable, and anonymous. due to its several advantages, it has been rapidly adopted by the business environment. although the first research on its application was focused on the financial industry, the interest in this technology quickly spread to other areas of business. in literature, you will find research papers that demonstrate the application of blockchain technology in various areas [20]: ▪ financial applications, (payments, loans) ▪ cryptocurrencies ▪ state administration (data on citizens, voting, data on ownership) ▪ internet of things (iot) ▪ health services ▪ business applications ▪ supply chain management ▪ energy industry ▪ data management ▪ education (online education, student data, exams, grades, diplomas, and certificates). blockchain applications, except for cryptocurrencies, usually need a hybrid or private organizational form. 5. electricity consumption for the operation of blockchain technology governments around the world are increasingly pressuring cryptocurrencies, particularly bitcoin, to reduce their energy consumption. [21] the cambridge bitcoin electricity consumption index reports that the bitcoin system uses 138.8twh of electricity per year. to provide context, a single bitcoin transaction requires 703.25 kwh of electricity, while visa only uses 148.63 kwh for 100,000 transactions1. to estimate the number of active devices in the bitcoin system, we can rely on the statistics published by 'pools'. these pools are made up of miners who combine their computing power to increase their chances of earning profits. although there are only a few of these pools, it is possible to calculate the total number of devices used in the bitcoin network based on their results. on the website [22] , the hash rate distribution results, indicating the success of block formation, are given with percentages of the share of the largest pools. all the major pools are displayed on an interactive diagram, including the 'braiins pool,' which has a participation rate of 0.941% in the total sum of all the pools achieving results. this data is monitored interactively on the blockchain.com website, and it changes over time. on the braiins pool website, the current number of active miners is displayed interactively, and this number changes over time. for instance, on june 29, 2023, at 7 p.m., there were 76,972 active devices (miners). based on this data, it can be estimated that the total number of miners is approximately eight million. if we assume that the 1 bitcoin average energy consumption per transaction compared to that of visa as of may 1, 2023 [30] 202 j. bačević, p. kočović, p. ivković, s. stanković average asic device has a power of 3.4 kwh, the calculation shows that it consumes about 24gwh. this data roughly matches the data presented on the cambridge bitcoin electricity consumption index website and can be considered relevant because the number of miners active on the network is continually changing. according to the estimated data, the total consumption of the bitcoin payment system is 138.8 twh/year. this high level of electricity consumption, with an upward trend, could not go unnoticed, so regulators in certain countries had to enact legislation for the operation of these systems. when comparing the bitcoin and ethereum systems, it is evident from the diagram that there is a significant difference in their electricity consumption. prior to september 2022, ethereum utilized the pow system, which consumed considerably more energy compared to the pos system that they switched to. the change in the system led to a 99% reduction in electricity consumption, making it an environmentally sustainable option [23]. fig. 2a bitcoin energy consumption (twh/year estimated) worldwide 2017-2023 [23] fig. 2b ethereum energy consumption (twh/year estimated) worldwide 2017-2023 [23] in the analysis of electricity consumption literature, a narrow focus on conventional payment systems is prevalent, neglecting other payment options. according to figure 1, the precise count of diverse cryptocurrency systems remains elusive, with varying outcomes from different data sources. it is important to acknowledge that the initial twenty payment systems constitute 90% of the entire cryptocurrency production. despite their lesser size, they possess a network of miners, whose electricity usage should be considered. given approximately 9,000 cryptocurrency systems as per figure 1, their energy consumption cannot be overlooked. according to [6] bitcoin currently dominates the cryptocurrency market with a 68% share, while ethereum is a distant second with a 13% share. if we were to 0 50 100 150 200 250 d e c. 1 9 a p r. 2 0 a u g. 2 0 d e c. 2 0 a p r. 2 1 a u g. 2 1 d e c. 2 1 a p r. 2 2 a u g. 2 2 d e c. 2 2 a p r. 2 3 a u g. 2 3 minimum maximum 0 50 100 d e c. 1 9 a p r. 2 0 a u g. 2 0 d e c. 2 0 a p r. 2 1 a u g. 2 1 d e c. 2 1 a p r. 2 2 a u g. 2 2 d e c. 2 2 a p r. 2 3 a u g. 2 3 minimum maximum the impact of blockchain technology on the environment 203 equate this market share to electricity consumption, we would need to add 32% of the energy consumed by other cryptocurrencies to the current electricity consumption of bitcoin. this would result in a total energy consumption of 183.2 twh/year. 5.1. the problem of secondary consumption of electricity a significant limitation to the existing body of research, data, and literature related to electricity usage in blockchain technology is that it solely accounts for the energy consumed by the equipment. yet, to maintain optimal performance, proper temperature regulation and cooling are also essential components. the application-specific integrated circuit (asic) chip of the device operates within a temperature range of 70°c to 80°c. the device should be installed in an air-conditioned room where the ambient temperature ranges from 10°c to 35°c, to ensure optimal operation. the temperature of the device's plate must be maintained below 90°c. the electricity consumption of the device varies based on the type and manufacturer, and for better quality, it ranges from 3,300w to 3,500w [24]. the process of cryptocurrency mining generates a significant amount of heat, requiring intensive cooling to ensure the proper functioning of the mining devices. typically, these devices are installed in large-scale operations known as "farms," where the sheer number of devices and energy consumption necessitate the dissipation of a substantial amount of thermal energy to maintain optimal temperatures. the conventional method for cooling mining equipment involves situating it in cooler areas where the temperature is naturally lower, thus reducing the need for excessive electricity to maintain safe temperatures. however, there are times of the year when simply introducing fresh cold air is insufficient, and more extensive cooling measures must be taken. the energy required for such cooling is often disregarded in literature, as it necessitates a thorough analysis of the installation site, including the duration and frequency of cooling needs. unfortunately, acquiring this information can be difficult since the total number of devices connected to the network is constantly fluctuating due to equipment replacements and repairs. furthermore, connectivity problems can hinder the accuracy of these assessments. 5.2. carbon footprint as a consequence of cryptocurrency mining blockchain technology has a significant carbon footprint due to its energy-intensive process of verifying transactions and creating new blocks on the blockchain. the energy consumption of blockchain technology results in significant greenhouse gas emissions, which contribute to climate change. the answer to the question of how much renewable energy is used for cryptocurrency mining depends on who you ask. cryptocurrency miners and related businesses claim that 74% of the energy they consume comes from renewable sources. however, a more objective analysis shows that coal and gas remain significant energy sources for electricity production in many countries. it is also worth noting that most mining equipment is located in regions where the cost of electricity is low. despite this, there is cause for concern as 75% of bitcoin mining in 2020 occurred in china, where estimates suggest that up to 40% of the energy consumed was generated from coal [10]. it is difficult to pinpoint the location of individual miners, so all other data presented are estimates. it is important to note that cryptocurrency mining has been banned in the republic of china since july 2021 [25]. 204 j. bačević, p. kočović, p. ivković, s. stanković based on the paper [26] following three formulas calculating required power, energy required, and energy consumption: t hash joules power required (mw) = network hashrate rig power efficiency second m hash             (1) ( ) ( ) ( )energy required mwh power required mw block time hour=  (2) ( ) ( )households' no.tx energy required mwh energy consumption mwh total blokchain network no. tx  = (3) total blockchain cost is: ( ) ( ) 18 cost usd ether price usd gas amount gas price in ether 10 wei  =       (4) 1 total blockchain cost = no. tx cost n ii=  (5) where i represents the number of days (i. e. n days). the data presented by digiconomist [23] states that the carbon footprint is 56.96 mt co2, which corresponds to the carbon footprint of portugal. data on the carbon footprint of a single bitcoin transaction, which is 379.14 kg co2, is available on the same website. when comparing the carbon footprint data of bitcoin and the ethereum system, interesting results are obtained. in september 2022, the ethereum system changed the mechanism of block formation and switched to pos. on an annual level, the amount of carbon dioxide has not yet been recalculated, but it is already known that ethereum produces 0.01 kg of co2 per transaction. this means that ethereum has a 3,900 times smaller carbon footprint than bitcoin. this information is of particular interest to the world community, which is trying to reduce the impact of carbon dioxide in the atmosphere [27]. 5.3. the problem of electronic waste cryptocurrency mining, specifically bitcoin as the largest system, causes significant issues with used equipment that needs to be disposed of. e-waste is a major environmental hazard as it contains toxic chemicals and heavy metals that are released into the soil when the equipment is discarded. this leads to air and water pollution caused by improper recycling. [10] the short life cycle of cryptocurrency mining equipment requires quick replacement to maintain business profitability.2 to gain a deeper understanding of this matter, it is necessary to delve into the mechanics of the system by taking a look at bitcoin as an example. on this system, each mining machine vies to produce a new block, with the probability of success being directly correlated to its share of computing power. the production of hashes, which are utilized in the block recalculation algorithm, requires electricity. the efficacy of hardware is contingent upon the amount of energy it consumes, 2 the latest model, graphic processing unit (gpu) used for mining, is the a100. this is a graphics processor from the tensor category[31] the impact of blockchain technology on the environment 205 with devices capable of performing more calculations per unit of energy being more economically advantageous. the reason for the rapid renewal of mining equipment is found in koomey's law [28] moore's law and koomey's law both predict exponential growth in computing power and energy efficiency, respectively in the same period of 18 months. the fast-paced progress of technology has resulted in a frequent replacement of equipment, often within a mere 18 months of its initial use. this is due to the continual introduction of newer models with enhanced processing capabilities, rendering older equipment less profitable. as time passes, cryptocurrency mining becomes less efficient with aging equipment. once 18 months have passed, the outdated devices are unable to compete with the newer models and must be disposed of. regrettably, repurposing mining devices for other tasks is not possible, leaving the discarded equipment as electronic waste. when analyzing the geographical location of mining farms, it's evident that they are mostly situated in northern regions due to the low average temperature which helps in reducing the cooling costs it's a known fact that e-waste processing factories are usually located far away from the places where e-waste is generated. this is why the percentage of e-waste recycling is low. globally, only 20% of all e-waste is recycled, while the rest ends up in landfills that pose a risk to the environment. [12] the current information available on e-waste associated with mining equipment pertains solely to bitcoin, disregarding the other 9000 cryptocurrency systems depicted in figure 3. considering that bitcoin constitutes approximately 68% of all cryptocurrencies generated, it is necessary to augment the number of installed devices by 32% to encompass the total number of asic devices. taking this estimation into account, it can be concluded that there exist roughly 8 million bitcoin mining devices. nevertheless, taking into account the 32% increase, the total number of installed devices surges to 10.5 million. fig. 3 the amount of e-waste generated (kilotonnes per year estimated) by bitcoin [23] all devices that are 18 months or older are disposed of and replaced with new ones. according to statista – annual total electronic waste, the amount of such waste is over 50 kt. 6. discussion with the rise of cryptocurrency mining equipment comes a concerning increase in environmental pollution. however, it's worth noting that the issue is specific to cryptocurrency mining and not blockchain technology as a whole. there are solutions available, such as private or hybrid blockchain models, that can reduce the environmental impact. 0 20 40 60 80 d ec .1 9 a p r. 2 0 a u g. 2 0 d ec .2 0 a p r. 2 1 a u g. 2 1 d ec .2 1 a p r. 2 2 a u g. 2 2 d ec .2 2 a p r. 2 3 a u g. 2 3 bitcoin wastegeneration 206 j. bačević, p. kočović, p. ivković, s. stanković private blockchain, for instance, is designed for closed systems with limited access. all nodes work together on a shared task, eliminating the need for devices to compete for rewards. this results in lower electricity consumption and longer device lifespans, reducing electronic waste. by considering alternative blockchain models, we can prioritize sustainability and reduce our impact on the environment. the hybrid model for organizing blockchain shares similarities with the private approach, but is designed to handle a much larger volume of transactions. in contrast to the private blockchain, there is less competition between individual devices and no requirement for any device to perform at the highest speed. in the realm of public blockchains, there is typically a significant volume of users. when these users are concentrated within domains such as state administration, healthcare, pension funds, and other similar public affairs, the workload is notably less demanding than that of cryptocurrencies. the tasks involved in these areas do not necessitate the use of the fastest devices or solving intricate algorithms within a short timeframe. as a result, the implementation of blockchain technology in these sectors does not present significant environmental protection challenges. public cryptocurrencies with a high number of mining devices present a significant challenge. the proof-of-work (pow) consensus methods used by these currencies can vary greatly in terms of energy consumption, with bitcoin requiring a substantial amount of electricity. this has led to regulatory proposals aimed at limiting the operation of these systems in many countries. however, ethereum's mining mechanism has made impressive strides by reducing electricity consumption by 99.84%. replacing pow mining with an efficient system can ease the strain on power systems, especially with regard to climate change. when examining the energy usage of cryptocurrency mining, it is crucial to take into account the overall energy expended in this process. this encompasses not just the energy consumed during mining, but also the energy used to regulate the temperature of the rooms containing the mining equipment. in the case of sizable mining operations, it may be feasible to boost energy efficiency by harnessing the excess thermal energy produced by the equipment to heat another area. such a measure would drastically enhance the energy utilization coefficient. cryptocurrencies are having a growing impact on the electricity market, causing prices to rise. the mining farms, regardless of their location and electricity sources, have a significant effect on consumption. implications of the research are: ▪ transparent and sustainable supply chains ▪ renewable energy tracking ▪ environmental credits and incentives ▪ efficiency gains in processes ▪ decentralized energy grids further research can be focused on recommendations and mitigation strategies ▪ transition to sustainable consensus mechanisms ▪ renewable energy adoption ▪ e-waste management ▪ industry collaboration and standards ▪ education and awareness the blockchain trilemma requires a balance between scalability, security, and decentralization. on-chain solutions are secure and decentralized but slow and expensive. the impact of blockchain technology on the environment 207 second-layer solutions offer scalability but less decentralization. p2p energy trading is limited by regulations and professional regulators. overcoming these limitations can result in a secure, scalable, and cost-efficient system. ethereum is computationally intensive and can result in slow and expensive transactions. the use of green energy certificates is a mechanism employed in various industries, including blockchain, to support and promote the use of renewable energy sources. these certificates, also known as renewable energy certificates (recs) or guarantees of origin (gos), are tradable instruments that represent the environmental attributes of electricity generated from renewable sources. here's how the process generally works: ▪ renewable energy generation: renewable energy producers, such as solar or wind farms, generate electricity using clean and sustainable sources. ▪ certificates green energy certificates: for each unit of renewable energy produced, a corresponding green energy certificate is issued. this certificate verifies the environmental attributes of the energy, indicating that it comes from a renewable source. ▪ trade and purchase: these certificates can be bought and sold on the market independently of the physical electricity. entities, including blockchain projects, can purchase these certificates to demonstrate their commitment to using renewable energy. ▪ environmental claims: by holding and retiring these certificates, organizations make environmental claims that they have supported the generation of renewable energy equivalent to their energy consumption. this helps them meet sustainability goals and showcase a commitment to reducing their carbon footprint. ▪ verification and transparency: the use of green energy certificates provides a level of transparency and verification in the energy market. buyers can ensure that the energy they are using or claiming to use has a renewable origin. it is important to note that while green energy certificates offer a way for organizations to support renewable energy and make environmental claims, they are not without criticism. some argue that relying solely on certificates may not directly contribute to the reduction of greenhouse gas emissions if the energy mix at the physical location is not predominantly renewable. therefore, organizations are encouraged to adopt a comprehensive approach to sustainability, including on-site renewable energy generation and energy efficiency measures, in addition to purchasing green energy certificates. 7. conclusion the potential of blockchain technology is promising for the future, and its usage is expected to increase over time. however, it's essential to note that the energy requirements of different block formation mechanisms vary and must be considered in the planning phase. to ensure the sustainable operation of blockchain systems, this issue must be taken into account. topics, such are: (a) smart contracts and efficiency, (b) environmental solutions: and (c) public awareness and education are out of the scope of this paper, but the authors took into consideration during they made research. the world of cryptocurrencies is expanding quickly, though it remains a relatively small part of the financial landscape. financial institutions around the globe are keeping a close eye on the developments in this field, with some even exploring and adopting blockchain 208 j. bačević, p. kočović, p. ivković, s. stanković technology for their operations. by integrating this technology, banks can move away from pow systems, taking a step towards reducing both electricity consumption and e-waste. when evaluating the environmental impact of our financial systems, it's important to consider the feasibility of widespread cryptocurrency adoption within the pow block formation model. bitcoin, for instance, is primarily utilized for speculative investment purposes and, while it can be used for payments and atm withdrawals, several limitations make these use cases uncommon. one of the most significant constraints is the speed of transactions, with only 3 to 4 transactions per second possible on the bitcoin network. in contrast, visa can handle up to 56,000 transactions per second, making it a more practical option for high-volume transactions in real-world settings. generating cryptocurrencies can be a lucrative business model for states, as it enables them to sell electricity at a higher value. nonetheless, it's important to note that the state's control over the flow of these funds is a major concern. bitcoin gained from mining cannot be registered by the state because it is converted on a crypto exchange that can be located anywhere globally. the actual money earned from this transaction can be sent to any destination. investing in mining facilities and renting them out can offer a steady source of income to both individuals and states, which can be taxed. however, from a global standpoint, this type of non-renewable resource consumption and significant air pollution pose a problem for future generations. finally, green energy certificates in blockchain, while promoting renewable energy, relate to the environmental impact: ▪ positive environmental impact: o chain footprint reduction: blockchain projects can offset their carbon footprint by purchasing green energy certificates, supporting renewable energy, and reducing greenhouse gas emissions. o promotion of renewable energy: green energy certificates boost demand for renewable energy, leading to increased investment in sustainable energy infrastructure and accelerating the shift towards a cleaner and more sustainable energy grid. o encouraging sustainable practices: green energy certificates show blockchain's commitment to the environment, improving its reputation and encouraging other sectors to do the same. ▪ considerations and criticisms: o physical energy mix: green energy certificates may have limited impact if the energy mix in the host region is still non-renewable, reducing the actual carbon emission reduction at the source. o need for holistic approaches: green energy certificates alone are not enough. on-site renewable energy generation, energy efficiency improvements, and responsible waste management should be combined for an effective sustainable approach in blockchain projects. o ensuring additionality: green energy certificates should ensure the additionality of renewable energy projects, creating new capacity instead of just redistributing existing renewable energy. ▪ transparency and reporting: o transparent reporting: green energy certificates promote transparency in environmental reporting. blockchain projects can demonstrate their commitment to renewable energy through transparent documentation of certificate purchases. o stakeholder communication: clear communication of green energy certificates can boost environmental credibility and foster trust. the impact of blockchain technology on the environment 209 in summary, the use of green energy certificates in blockchain has a positive environmental impact by supporting renewable energy and reducing carbon footprints. however, it is essential for blockchain projects to adopt a comprehensive and transparent approach, considering the physical energy mix, ensuring additionality, and communicating their sustainability efforts effectively. references [1] s. nakamoto, "bitcoin: a peer-to-peer electronic cash system", 2008. [online]. available: www.bitcoin.org. [2] m. peck, "blockchains: how they work and why they’ll change the world," ieee spectrum, vol. 54, no. 10, pp. 26–35, 2017. [3] m. peck and s. moore, "the blossoming of the blockchain", ieee spectrum, vol. 54, no. 10, pp. 24– 25, 2017. [4] s. vujičić, m. cogoljević and z. nikitović, "the development of ecological awareness in the republic of serbia", int. rev., vol. 2022, no. 1-2, pp. 51–59, 2022. [5] k. o’dwyer and j. malone, "bitcoin mining and its energy footprint", in proceedings of the 25th iet conference 2014, limerick, 2014, pp. 36–27. [6] "cryptocurrency prices, charts and market capitalizations", june 2023. [online]. available: www.coinmarketcap.com. [7] "number of cryptocurrencies 2013-2023", june 2023. [online]. [8] b. siddika, m. amaya and t. marstonl, "the water and carbon footprint of cryptocurrencies and conventional currencies", j. clean. prod., p. 137268, vol. 411, july 2023. [9] z. zheng, s. xie, h. dai, x. chen and h. wang, "an overview of blockchain technology: architecture, consensus, and future trends", in proceedings of the 6th ieee international congress on big data, june 2017, pp. 557–564. [10] c. stoll, l. klaaßen and u. gallersdo, "the carbon footprint of bitcoin", joule, vol. 3, no. 7, pp. 1647– 1661, june 2023. [11] s. küfeoğlu and m. özkuran, "bitcoin mining: a global review of energy and power demand", energy res. soc. sci., vol. 58, p. 101273, dec. 2019. [12] a. de vries and c. stoll, "bitcoin's growing e-waste problem", resour. conserv. recycl., vol. 175, p. 105901, dec. 2021. [13] l. meihui, m. khokhar, i. patra, "ecological supply chain: tools for evaluating e-waste – world perspective", prob. sustain. dev., vol. 18, no. 2, pp. 167–182, 2023. [14] b. chez, "today's cryptocurrency prices by market cap", july 2023. [online]. available: https://coinmarketcap.com/ [15] d. f. kudriakov and m. v. chernyaev, "the role of blockchain technology in improving the efficiency of fuel & energy companies", int. rev., vol. 1–2, pp. 87–95, 2022. [16] v. buterin, "next generation smart contract & decentralized application platform (white paper)," 2014. [online]. available: http://www.theblockchain.com/docs/ethereum_white_papera_next_generation_smart_ contract_and_decentralized_application_platformvitalik-buterin.pdf. [17] a. de vries, "cryptocurrencies on the road to sustainability: ethereum paving the way for bitcoin, patterns 4," jan. 2023. [online]. available: https://www.cell.com/patterns/fulltext/s2666-3899(22)00265-3 (22.06.2023). [accessed 22 june 2023]. [18] z. zheng and x. shaoan, "blockchain challenges and opportunities: a survey", int. j. web and grid services, vol. 14, no. 4, p. 352, 2018. [19] m. niranjanamurthy, b. nithya and s. jagannatha, "analysis of blockchain technology: pros, cons and swot", cluster comput., vol. 22, pp. 14743–14757, 2019. [20] m. fernández-caramést and p. fraga-lamas, "review on the use of blockchain for the iot", ieee access, vol. 6, pp. 32979-33001, 2018. [21] "cambridge bitcoin electricity consumption index," university of cambridge, 1923. [online]. available: https://ccaf.io/cbnsi/cbeci. [accessed 18 july 2023]. [22] [online]. available: www.blockchain.com/explorer/charts/pools. [23] digiconomist, "bitcoin electronic waste monitor", june 2023. [online]. available: https://digiconomist.net/ bitcoin-electronic-waste-monitor/. 210 j. bačević, p. kočović, p. ivković, s. stanković [24] software testing help, "10 best asic miners for mining cryptocurrency in 2023," june 2023. [online]. available: www.softwaretestinghelp.com. [25] t. j., "bitcoin mining hashrate by country", may 2023. [online]. [26] k. coutinho, p. wongthongtham, b. abu-salih, m. a. abu saleh, n. k. khairwal, "carbon emission and cost of blockchain mining in a case of peer-to-peer energy trading," frontiers in built environment, vol. 8, pp. 1-13, sept. 2022. [27] "global e-waste statistics & facts," july 2023. [online]. available: https://www.statista.com/topics/ 3409/electronic-waste-worldwide/. [28] f. a., "what is koomey's law and why could it replace moore's law in importance among chip makers?", june 2023 [online]. [29] [online]. available: https://www.statista.com/statistics/881541/bitcoin-energy-consumption-transactioncomparison-visa/. [30] "a100", 2023. [online]. available: https://www.nvidia.com/en-us/data-center/a100/. instruction facta universitatis series: electronics and energetics vol. 27, no 1, march 2014, pp. 103 112 doi: 10.2298/fuee1401103k multiple quantum walkers on the line using hybrid coins: a possible tool for quantum search  ioannis g. karafyllidis 1 , paul isaac hagouel 2 1 democritus university of thrace, department of electrical and computer engineering, 671 00 xanthi, greece 2 optelec, 11 chrysostomou smyrnis street, 54 622 thessaloniki, greece abstract. in this paper discrete quantum walks with different coins used for odd and even time steps are studied. these coins are called hybrid. the calculation results are compared with the most frequently used coin, the hadamard transform. furthermore, quantum walks on the line which involve two or more quantum walkers with hybrid coins are studied. quantum walks with entangled walkers and hybrid coins are also studied. the results of these calculations show that the proposed types of quantum walks can be used for quantum search, because the walker can be directed towards preferred directions and can also be confined in certain segments of the line. key words: quantum walk, quantum computing, simulation max 1. introduction quantum walks are quantum versions of classical random walks. they were first introduced in 1993 [1] and since then considerable work has been done on this subject. quantum walks are useful models for physical processes such as brownian motion and may serve as a basis for the development of new quantum algorithms [2], [3]. furthermore, quantum walk is a natural model for quantum search using parallel quantum computer architectures [4], [5]. quantum walks may also become an effective tool for studying biological systems [6]. several studies of continuous-time and discrete-time quantum walks on the line [7], [8], and some implementation proposals have been published [9]-[11]. the effect of noise on the discrete-time quantum walk has also been studied [12]. recently, a study of a quantum walk on the line with one walker and several coins has been published [13]. on the other hand, in [14] a quantum walk on the line with two entangled walkers and one coin, the hadamard transform, is studied. in this paper a study of discrete quantum walks in which multiple walkers use hybrid coins is presented. "hybrid coin" means the use of two different coins, one for odd and one for even time steps. the question to be answered by this study is: is it possible to use multiple quantum  received january 9, 2014 corresponding author: ioannis g. karafyllidis democritus university of thrace, department of electrical and computer engineering, 671 00 xanthi, greece (e-mail: ykar@ee.duth.gr) mailto:ykar@ee.duth.gr 104 i. g. karafyllidis, p. i. hagouel walkers and hybrid coins to direct the search towards a desired direction and, furthermore, is it possible to confine the search in a desirable segment of the line? calculation results show that this is possible. 2. quantum walk on the line with hybrid coins in discrete quantum walk a walker (which can be a particle or a state) moves on a one-dimensional periodic lattice. the sites of this lattice are numbered by: 0, 1, 2,i n    (1) the hilbert space of the discrete quantum walk comprises two subspaces, the location subspace hl, which is spanned by the basis: , 2 , 1 , 0 , 1 , 2 ,i n n    (2) and the two-dimensional coin subspace, hc, which is spanned by the two coin basis states 0 and 1 . the hilbert space, h, of the quantum walk is: l ch h h  (3) the state of the quantum walker found at location j with coin in state 0 is , 0j . the quantum walk usually starts with the walker in state 0 , 0 . at each step of the walk two operations are applied to the walker state. the coin toss operation, c, which acts on the coin state, is applied first: 0,0 0,1 1,0 1,1 , 0 , 0 , 1 , 1 , 0 , 1 c j c j c j c j c j c j     (4) any two-dimensional unitary transformation can by used as a coin toss operation. usually, the hadamard transform, h, is used. in this case: 0,0 0,1 1,0 1,1 1 1 1 2 1 1 c c h c c                    (5) the second operation applied is the walker shit operation, s, which acts on the location state and is given by: 1 1 1 0 0 1 n j n s j j j j         (6) this operation shifts the walker to the right (towards +n) if the coin state is 1 and to the left if the coin state is 0 . the probability distribution for a discrete quantum walk with initial walker state 0 , 0 , in which the hadamard transform is used as coin, is shown in multiple quantum walkers on the line using hybrid coins: a possible tool for quantum search 105 figure 1. the probability distribution is biased towards left because of quantum interference. the initial walker state 0 , 1 results in probability distribution biased towards right. fig. 1 probability distribution for a quantum walk after 40 steps. the initial state is 0 , 0 and the hadamard transform is used for coin toss the dependence of the probability distribution on the coin initial state leads naturally to the question: what is the probability distribution in the case where two coins are used alternatively? the case where the coin used in odd steps is the hadamard transform and the coin used in even time steps is a phase shift, p, is considered first. the phase shift is given by: 1 1 1 i p e            (7) figure 2 shows the probability distribution in this case. the initial walker state is 0 , 0 and the phase angle, ф, is 60 o . the probability distribution is biased towards left as in the case where only the hadamard transform was used, but the probability to find the walker in certain locations, which are periodically distributed, is larger. on the other hand, there is a zero probability to find the walker in much more locations that the case where only the hadamard transform was used. this is an expected result for all phase angles, in the case of a single walker. phase shift is important in the case of multiple walkers, because it affects quantum interference. 106 i. g. karafyllidis, p. i. hagouel fig. 2 probability distribution for a quantum walk after 40 steps in the case where two coins are used alternatively, namely h and p. the initial walker state is 0 , 0 the case where the coin used in odd steps is the hadamard transform and the coin used in even time steps is a more general transform, g, is considered next. the transform g is given by: cos ( ) sin ( ) sin ( ) cos ( ) g               (8) figure 3(a) shows the probability distribution after 40 steps in this case where φ = 30 o . the initial walker state is 0 , 0 . the walker is localized between in the region [-10, +10]. the order of magnitude of the probability to find the walker in locations outside this region is 10 -3 . it is therefore acceptable to say that using the aforementioned hybrid coin we can confine the walker within a certain segment of the line. this walker can be confined in any segment of the line [x-10, x+10] by setting the initial walker state to , 0x . different values of φ result in walker confinement in regions with different sizes. for example, figure 3(b) shows the probability distribution after 40 steps in this case where φ = 55 o and initial walker state 20 , 0 . in this case the walker is confined in the region [18, 22] or [20-2, 20+2], that is ±2 around its initial location. multiple quantum walkers on the line using hybrid coins: a possible tool for quantum search 107 (a) (b) fig. 3 probability distribution for a quantum walk after 40 steps in the case where the coins h and p are used alternatively. (a) initial walker state 0 , 0 and φ=30 o . (b) initial walker state 20 , 0 and φ=55 o . 108 i. g. karafyllidis, p. i. hagouel 3. multiple walkers on the line more that one walker can be used in order to exploit quantum interference. a number of w walkers can be used. these walkers can be distinct particles each one with a different initial state. in this case the initial state of the quantum walk, inw , is given by: 1 1 1 2 2 2 3 3 3, , , ,in w w ww a w c a w c a w c a w c     (9) with 2 2 2 2 1 2 3 1wa a a a     (10) multiple walkers can also be states of the same particle located initially at different locations. in this case: 2 2 2 2 1 2 3 1wa a a a     (11) figure 4 shows the probability distribution after 40 steps of quantum walk. a hybrid coin h and p with ф = 40 o is used. the initial state for this walk is: 1 1 14 , 0 12 , 0 2 2 inw     (12) the calculation results show that the walk is directed towards left. fig. 4 probability distribution after 40 steps of quantum walk with a hybrid coin h and p with ф = 40 o . the initial state for this walk is given by equation (12). multiple quantum walkers on the line using hybrid coins: a possible tool for quantum search 109 figure 5 shows the probability distribution after 40 steps of quantum walk in which a hybrid coin h and g with φ = 30 o is used. the initial state for this walk is: 1 1 18 , 0 18 , 1 2 2 inw    (13) the walkers are confined into two segments of the line. from figure 5 it is evident that the two probability patterns are located symmetrically to the left and to the right of the origin and are exactly the same. this walk results in two probability patterns which are the same and are displaced by 36 line sites. fig. 5 probability distribution after 40 steps of quantum walk with a hybrid coin h and g with φ = 30 o . the initial state for this walk is given by equation (13). a quantum walk with two entangled walkers will be considered next. the initial state of the walk is: 1 1 6 , 0 5 , 1 2 2 inw    (14) α hybrid coin h and g with φ = 50 o is used. the calculation results are shown in figure 6. the probability distribution pattern has mirror symmetry with respect to the origin. more than two walkers can be used. let us examine the case of a quantum walk with three walkers in which a hybrid coin h and g with φ = 30 o is used. the initial state is: 1 1 1 10 , 1 5 , 1 11 , 0 2 2 2 inw      (15) 110 i. g. karafyllidis, p. i. hagouel fig. 6 probability distribution after 40 steps of quantum walk with a hybrid coin h and g with φ = 50 o . the initial state for this walk is given by equation (14) the calculation results shown in figure 7 indicate that the walkers are confined within the region [-20, 20]. there is a non-zero probability to locate a walker in every location within the region [-15, 1]. fig. 7 probability distribution after 40 steps of quantum walk with a hybrid coin h and g with φ = 30 o . the initial state for this walk is given by equation (15) multiple quantum walkers on the line using hybrid coins: a possible tool for quantum search 111 the periodic structure of probability distribution shown in figure 8 was obtained using four walkers with hybrid coin h and g (φ = 30 o ). the initial state was: 1 1 1 1 20 , 0 10 , 1 10 , 0 20 , 1 2 2 2 2 inw       (16) a periodic probability distribution with more periods can be obtained using more walkers. figures 5 and 6 indicate that two periods correspond to two walkers. fig. 8 probability distribution after 40 steps of quantum walk with a hybrid coin h and g with φ = 30 o . the initial state for this walk is given by equation (16) 4. conclusions in this paper the study of discrete quantum walks involving multiple walkers and hybrid coins was presented. an analytical study of these quantum walks is probably impossible because the probability distribution patterns depend on the choice of hybrid coins, the number of the walkers and the initial states. a large variety of patterns can be achieved including walker confinement, walker direction and periodic patterns. the results presented here indicate that quantum walk on the line with multiple walkers using hybrid coins is an effective tool for quantum search. references [1] y. aharonov, l. davidovich and n. zagury, quantum random walks, physical review a, 48, 1993, 1687. [2] a. ambainis, quantum walks and their algorithmic applications, quant-ph/0403120. [3] j. kempe, quantum random walks: an introductory overview, contemporary physics, 44, 2003, 302. [4] i. g. karafyllidis, simulation of entanglement generation and variation in quantum computation, journal of computational physics, 200, 2004, 383. 112 i. g. karafyllidis, p. i. hagouel [5] i. g. karafyllidis, definition and evolution of quantum cellular automata with two qubits per cell, physical review a, 70, 2004, 044301. [6] tai-hsin hsu and su-long nyeo, diffusion coefficients of two-dimensional viral dna walks, physical review e, 67, 2003, 051911. [7] d. ben-avraham, e. m. bolt and c. tamon, one-dimensional continuous-time quantum walks, quantum information processing, 3, 2004, 295. [8] o. buerschper and k. burnett, stroboscopic quantum walks,quant-ph/0406039. [9] w. dur, r. raussendorf, v. m. kendon and h.-j. briegel, quantum walks in optical lattices, physical review a, 66, 2002, 052319. [10] j. du, h. li, x. xu, m. shi, j. wu, z. zhou and r. han, experimental implementation of the quantum random-walk algorithm, physical review a, 67, 2003, 042316. [11] h. jeong, m. paternostro and m. s. kim, simulation of quantum random walks using the interference of a classical field, physical review a, 69, 012310, 2004. [12] d. shapira, o. biham, a. j. bracken and m. hackett, one-dimensional quantum walk with unitary noise, physical review a, 68, 2003, 062315. [13] p. ribeiro, p. milman and r. mosseri, aperiodic quantum random walks, physical review letters, 93, 2004, 190503. [14] y. omar, n. paunkovic, l. sheridan and s. bose, quantum walk on a line with two entangled particles, quant-ph/0411065. instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 457 464 doi: 10.2298/fuee1503457c using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors  aaron m. collins, yue pan, anthony s. holland school of science engineering and health, rmit university, australia abstract. we present a numerical method to extract specific contact resistivity (scr) for three-dimensional (3-d) contact structures using a two-electrode test structure. this method was developed using finite element modeling (fem). experimental measurements were performed for contacts of 200 nm nickel (ni) to p+-type germanium (ge) substrates and 200 nm of titanium (ti) on 4h-silicon carbide (sic). the scr obtained was (2.3-27) ×10-6 ω·cm2 for the ni-ge contacts and (1.3-2.4) ×10-3 ω·cm2 for the ti-sic. key words: specific contact resistivity, test structures, ohmic contact. 1. introduction specific contact resistivity (ρc, [ω·cm 2 ]) is one of the most important parameters in studying metal-semiconductor interfacial properties. this parameter is useful to determine the quality of a contact between two materials, due to specific contact resistance being geometry independent. therefore methods of testing this parameter can be seen to be of great use to reliability simulations. in measuring the specific contact resistivity, several test structures and methods have been reported [1-6]. among them, the transmission line model (tlm) and circular transmission line models (ctlm) are commonly used [7] due to their long standing reliability in testing methods. analysis using the tlm and ctlm is based on a two-dimensional (2-d) model which assumes no voltage drop in the semiconductor layer in the vertical direction. however, due to the reducing size of semiconductor devices and decreased ρc, this vertical voltage drop in the semiconductor layer could lead to errors in derivation of specific contact resistivity using either tlm or ctlm. furthermore, the prevalence of mems semiconductor devices suggests the need for a 3-d test structure for determining ρc of contacts to such devices. correction factors are commonly used to increase the accuracy of derived specific contact resistivity in 3-d circumstances [8], but not in the technique used in this paper. in this paper, we present a numerical method to extract specific contact resistivity for 3-d contact structures using a two-electrode circular test structure derived from investigation of the conventional three-electrode ctlm [9]. the method was developed using finite received december 2, 2014; received in revised form february 10, 2015 corresponding author: yue pan school of science engineering and health, rmit university, australia (e-mail: s3265073@student.rmit.edu.au) 458 a. m. collins, y. pan, a. s. holland element modeling (fem) of ohmic contacts between a metal layer and a semiconductor substrate and the scaling behavior of this method was also determined and discussed in this paper. this method presents its most useful application in areas where the lateral dimensions are far greater than the vertical. experimental measurements using the proposed test structure were performed for contacts of 200 nm ni to p-type ge substrates and contacts for 200 nm ti to 4h-sic and the specific contact resistivity was determined to be (2.3-27)×10 -6 ω·cm 2 and (1.3-2.4)×10 -3 ω·cm 2 respectively. 2. the structure as defined by berger [10], the parameter η is used to determine whether a metal and a semiconductor ohmic contact is in 3-d circumstance or not. in (1), when η ≤ 1, we have a 3-d contact, otherwise it is a 2-d contact. note that ρb and t are the resistivity and the thickness of the semiconductor layer respectively. (1) to create a pure 3-d situation, the test structure is assumed to be fabricated on a semiconductor substrate which has a relatively large thickness to make sure η ≤ 1. the test pattern for determining ρc in such a 3-d circumstance is shown in fig. 1 and consists of a central dot contact and a ring contact. the radius of the central dot is r0 and the inner and outer radii of the outer electrode are r1 and r2 respectively. mesa isolation is not needed, as is the case for all ctlm type test structures. in this paper, r0, r1, r2, ρb and ρc are all the information which determine the total resistance rt that is measured between the two electrodes. it can be written in the following form which is useful in the study of the scaling behavior of this method (discuss later). { } (2) by measuring rt, ρc can be found with the resistivity of the semiconductor layer ρb and the geometry sizes known. fig. 1 isotropic view of schematic of the proposed 3-d two-contact circular test structure. using a two-contact circular test structure to determine the specific contact resistivity... 459 3. the method the analytical solutions to the current-voltage relationship of the proposed test structure were deemed to be too difficult or impossible to obtain. therefore, we present a numerical method to determine ρc which is developed using finite element modeling (fem) of ohmic contacts between a metal layer and a semiconductor substrate [11]. a. finite element modeling fem can be used to accurately model the electrical behavior of ohmic contacts between a metal and a semiconductor. creating a model requires the following information: (i) test structure geometry, (ii) conductivity of each layer in the structure and (iii) specific contact resistivity ρc of each interface in the structure. msc nastran is a finite element program developed by nasa for electrical analysis while msc patran is used for creating models and meshing. fig. 2 shows a section of the fem model used to develop solutions for the 3-d ohmic contact test structure. it consists of three layers which are metal layer on the top, bulk semiconductor on the bottom and the very thin interfacial layer between them. only a 45 ◦ sector is modeled to reduce the time taken for analysis to run. the current is injected at fig. 2 equipotentials (in millivolts) in the semiconductor layer in a 3-d situation for the finite-element modeling example where r0 = 3 μm, r1 = 5 μm, and r2 = 9 μm. (a 45 ° sector of the test structure is presented). 460 a. m. collins, y. pan, a. s. holland the center electrode and the equipotential of the outer electrode is set to zero. the voltage contours in fig. 2 shows that when the thickness of the semiconductor layer t is beyond a certain value t ’ , little current goes through the bottom of the semiconductor substrate. what is mean by this is that when metal contacts to the substrate directly, the thickness of the semiconductor layer t can be considered as infinite beyond this t ’ (relatively small compare to typical substrate thickness). a number of models are analyzed using fem with ρb and ρc varying from 0.0001 ω·cm to 0.001 ω·cm and 1×10 -9 ω·cm 2 to 1×10 -4 ω·cm 2 respectively. the geometry size is fixed and the thickness of the semiconductor layer is set to be large enough to make sure the model is 3-d and little current goes through the bottom of the substrate. by doing this, we can get a constant rt with different combinations of ρb and ρc. plotting rt as a function of ρc with variable ρb, we can get fig. 3. from fig. 3, we can pick up the right curve with known semiconductor resistivity ρb and find out the value of ρc using the experimentally determined total resistance rt. fig. 3 fem analysis results for total resistance rt between the two electrodes as a function of ρc with ρb varying from 0.0001 ω·cm 0.001 ω·cm. geometry is fixed. r0 = 3 μm, r1 = 5 μm, and r2 = 9 μm. b. scaling behavior the scaling behavior of this method is shown in (3) { } { } (3) using (3), the plots in fig. 3 will be the same with ρc, rt and ρb scaled by factors of m 2 n, n and mn respectively. thus, the structure is universal and applicable for ohmic contacts where the resistive effects of the semiconductor and the contact can be described by ρb and the geometry of the electrodes. for example, when m = 1 and n = 10, we get fig. 4 which has the same shape of plots in fig. 3 but for a new set of ρb. using a two-contact circular test structure to determine the specific contact resistivity... 461 fig. 4 fem analysis results for total resistance rt between the two electrodes as a function of ρc with ρb varying from 0.001 ω·cm 0.01 ω·cm. geometry is fixed. r0 = 3 μm, r1 = 5 μm, and r2 = 9 μm. note that this figure can be scaled using (3). 4. experimental and results experimental measurements using the proposed test structure were performed for contacts of 200 nm ni to ge substrates. a number of two-contact circular test patterns were prepared on p-type germanium substrate. the geometries vary from r0 = 6 μm, r1 = 10 μm and r2 = 18 μm to r0 = 24 μm, r1 = 40 μm and r2 = 72 μm. fig. 5 shows an optical micrograph of an example pattern fabricated with r0 = 15 μm, r1 = 25 μm and r2 = 45 μm. fig. 5 optical micrograph of a two-contact circular test structure fabricated on p-type ge. the geometry size is r0 = 15 μm, r1 = 25 μm and r2 = 45 μm. the contacts are prepared in the following way. the p-type 3 inch germanium wafer with a thickness of 220 μm was diced into squares with dimensions of 1×1 cm 2 and 462 a. m. collins, y. pan, a. s. holland cleaned in az 100 solvent at 80 ºc for 15 minutes followed by acetone, isopropal alcohol and deionized water and dried in nitrogen gas. az 1512 was then spin coated on the surface of the wafers followed by soft baking at 90 ºc for 90 seconds. after removing the edge bead of the photoresist, the wafers were exposed to uv light for 8 seconds, soaked in chlorobenzene for 60 seconds and developed in 1:4 di water: az 400k for 25 seconds. after deposit 200 nm ni on the ge substrate by electron beam evaporation and soaked in acetone, the ni electrodes patterns were formed by lift off technique using ultra sound equipment at 90º c for 30 minutes. finally, the wafers were cleaned in deionized water and dried using nitrogen gas. the same process was conducted in order to prepare the sic substrates with ti deposited to a thickness of 200 nm. in addition to the photolithographic steps as discussed the sic samples were heat treated at 1100 ºc for 30 minutes in an argon environment. it is known that ti and sic will produce a schottky contact when deposited with no treatment applied. therefore this extra step was taken to ensure that the ti contacted the sic uniformly and to create an ohmic contact. fig. 6 optical micrograph of a two-contact circular test structure fabricated on n-type 4h-sic. the geometry size is: r0 = 30 μm, r1 = 50 μm and r2 = 90 μm. resistivity for ge substrate was determined before the wafer was diced using four point probe technique and it was determined to be 0.035 ω·cm. measurements were taken for ten different dimensions of the test patterns described above. a probing station with 0.6 μm radius tips, a multi meter and a current supply were used in the measurements. the current/voltage characteristic of each two-contact circular pattern indicates that ohmic contacts were generated between as-deposited ni and ge. the measured total resistance rt ranged from 4.78 ω to 17.23 ω with different dimensions of patterns. the values of ρc were then determined using fig. 4 and (3) and varied from 2.3×10 -6 ω·cm 2 to 2.7×10 -5 ω·cm 2 . this can be seen in table 1. using a two-contact circular test structure to determine the specific contact resistivity... 463 table 1 experimental results for determining specific contact resistivity for as-deposited nickel to germanium substrate contacts pattern gem. rt (ω) ρc (ω·cm 2 ) 1 a 15.68 3.7×10 -6 2 a 17.23 6.5×10 -6 3 a 14.77 2.3×10 -6 4 b 6.98 1.3×10 -5 5 b 6.48 1.1×10 -5 6 b 5.93 7.9×10 -6 7 b 5.54 5.3×10 -6 8 b 6.06 8.8×10 -6 9 c 4.43 2.1×10 -5 10 c 4.78 2.7×10 -5 a: r0 = 6 μm, r1 = 10 μm, r2 = 18 μm. b: r0 = 15 μm, r1 = 25 μm, r2 = 45 μm. c: r0 = 24 μm, r1 = 40 μm, r2 = 72 μm. table 2 experimental results for determining specific contact resistivity for heat treated titanium to silicon carbide substrate contacts pattern gem. rt (ω) ρc (ω·cm 2 ) 1 c 140 2.4×10 -3 2 c 125 1.8×10 -3 3 c 129 1.9×10 -3 4 c 137 2.1×10 -3 5 c 150 2.4×10 -3 6 d 70 1.5×10 -3 7 d 63 1.3×10 -3 8 d 96 2.1×10 -3 9 d 103 2.4×10 -3 10 d 98 2.1×10 -3 c: r0 = 24 μm, r1 = 40 μm, r2 = 72 μm. d: r0 = 30 μm, r1 = 50 μm, r2 = 90 μm. similarly to the ge substrate, the sic samples had the sheet resistance measured before fabrication using the four-point probe method. from this measurement the sheet resistance was determined to be 0.01 ω cm. using ten different patterns of two differing sizes, measurements were taken as per the described method. the resistance measurements taken from the patterns ranged between 70 ω to 150 ω as the patterns became smaller in size. with these measurements taken from the sic samples, ρc was determined to be between 1.3×10 -3 ω·cm 2 and 2.4×10 -3 ω·cm 2 . the full results can be viewed in table 2. 5. conclusion a numerical method for determining specific contact resistivity between a metal and a semiconductor ohmic contact in 3-d circumstance using a two-contact circular test structure was presented. it was developed using finite element modeling program. specific contact resistivity for as-deposited ni contacts to p-type ge substrates were 464 a. m. collins, y. pan, a. s. holland obtained by using the proposed test structure and it was determined to be (2.3-27) × 10 -6 ω·cm 2 using presented method. in addition the process was conducted a second time on heat treated ti contacts on sic to provide a second independent set of results. the specific contact resistivity was determined to be (1.3-2.4) ×10 -3 ω·cm 2 . the results show that with known semiconductor substrate resistivity ρb and a fixed geometry, using a scaling equation, ρc can be determined conveniently by picking up data points from the reported figures. references [1] d. k. schroder, semiconductor material and device characterization, 3rd ed. hoboken, nj: wiley, pp. 135-157, 2006. [2] g. k. reeves and h. b. harrison, "obtaining the specific contact resistance from transmission line model measurements", ieee electron device lett., vol. edl-3, no. 5, pp. 111–113, may 1982. [3] s. j. proctor, l. w. linholm, and j. a. mazer, "direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity", ieee trans. electron devices, vol. ed-30, no. 11, pp. 1535–1542, november 1983. [4] v. gudmundsson, p. hellstrom, and m. ostling, "error propagation in contact resistivity extraction using cross-bridge kelvin resistors", ieee trans. electron devices, vol. 59, no. 6, pp. 1585–1591, june 2012. [5] k. w. j. findlay, w. j. c. alexander, and a. j. walton, "the effect of contact geometry on the value of contact resistivity extracted from kelvin structures", in proceedings of the ieee int. conf. microelectron. test struct., march 1989, vol. 2, pp. 133–138. [6] d. b. scott, r. a. chapman, c.-c. wei, s. s. mahant-shetti, r. a. haken, and t. c. holloway, "titanium disilicide contact resistivity and its impact on 1-μm cmos circuit performance", ieee trans. electron devices, vol. ed-34, no. 3, pp. 562–574, march 1987. [7] g. k. reeves, "specific contact resistivity using a circular transmission line model", solid state electron, vol. 23, no. 5, pp. 487-490, may 1980. [8] a. s. holland, g. k. reeves, p. w. leech, "universal error corrections for finite semiconductor resistivity in cross-kelvin resistor test structures", ieee trans. electron devices, vol. 51, no. 6, pp. 914-919, june 2004. [9] y. pan, g. k. reeves, p. w. leech and a. s. holland, "analytical and finite-element modeling of a two-contact circular test structure for specific contact resistivity", ieee trans. electron devices, vol. 60, pp. 1202-1207, march 2013. [10] h. h. berger, "models for contacts to planar devices", solid state electron, vol. 15, no. 2, pp. 145-158, february 1972. [11] y. pan, a. m. collins and a. s. holland, "determining specific contact resistivity to bulk semiconductor using a two-contact circular test structure", in proceedings of the ieee international conference on miel, may 2014, pp. 257-260. 12548 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 53 73 https://doi.org/10.2298/fuee2401053n © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee septian nudin1, marko suvajdžić2, petar lukovac3, dušan barać3, božidar radenković3 1embassy of the republic of indonesia in belgrade, indonesia 2digital worlds institute, university of florida, usa 3department of e-business, faculty of organizational sciences, university of belgrade orcid ids: septian nudin https://orcid.org/0009-0009-2197-0907 marko suvajdžić https://orcid.org/0000-0001-8418-3470 petar lukovac https://orcid.org/0000-0003-4561-8886 dušan barać https://orcid.org/0000-0003-0517-2525 božidar radenković https://orcid.org/0000-0003-2111-7788 abstract. this study aims to analyze the readiness for adopting blockchain technology in tracking the authenticity of organic coffee to provide added value to consumers and producers of coffee considering technological advances in the supply chain. this study combines the unified theory of acceptance and use of technology (utaut) and the technology acceptance model (tam). an online questionnaire with eligible respondents is used to collect data which is then processed using smart pls 4.0 software. the data analysis method used is quantitative. the findings indicate that every explanatory variable has a positive impact on the dependent variable, suggesting that consumer adoption of blockchain technology depends on simplicity, advantage, and positive attitude toward technology use. key words: blockchain, organic coffe traceability, utaut, tam 1. introduction coffee beverage receives a warm reception from various groups worldwide due to its unique and distinctive flavor. this beverage also appeals to the global community because of factors such as tradition, history, social connections, and economic benefits [1]. coffee has become a popular and widely consumed beverage in the community, with caffeine estimated to be consumed weekly by 98% of individuals aged 18 years [2]. data from the national sleep foundation support this [3], which shows that approximately 75-98% of teenagers consume at least one caffeinated beverage daily, and 31% report consuming more than two drinks daily. organic production is a viable alternative to the market price volatility of conventional coffee for 70% of coffee producers [4]. certified organic coffee has enabled producers to access received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: petar lukovac university of belgrade, faculty of organizational sciences, jove ilića 154, belgrade, serbia e-mail: petar.lukovac@elab.fon.bg.ac.rs https://orcid.org/0009-0009-2197-0907 https://orcid.org/0000-0001-8418-3470 https://orcid.org/0000-0003-4561-8886 https://orcid.org/0000-0003-0517-2525 https://orcid.org/0000-0003-2111-7788 mailto:petar.lukovac@elab.fon.bg.ac.rs 54 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković improved and consistent product pricing. besides the positive economic outcomes, producing organic coffee brings about notable social and environmental advancements for 67% of farmers. this includes significant improvements, such as 8% of farmers no longer requiring additional employment outside the coffee sector, indicating increased stability and income from organic coffee production. furthermore, 17% of farmers have been able to access other resources for their families, leading to enhanced overall well-being. moreover, the transition to organic practices has resulted in 42% of farmers mentioning the avoidance of toxic risks to their families and communities, as the elimination of agrochemical usage ensures a safer and healthier environment [4]. despite coffee's increasing popularity and fame, the coffee industry still faces several problems. here are some of the issues encountered in the coffee industry [5]: 1. unfair coffee prices among actors in the coffee supply chain. 2. farmers do not receive sufficient income from their coffee endeavors. 3. unstable coffee prices. 4. child labor in the coffee sector. 5. deforestation for coffee farming land. 6. climate change can damage coffee plants. these problems significantly impact various aspects, including social ethics, coffee plant sustainability, farmer welfare, and national revenue from the coffee industry. however, technological advancements provide opportunities to address these problems, and there is even potential for solving them. one technology that has been implemented in the coffee industry is blockchain. with the transparency and traceability provided by blockchain technology, some of the problems as mentioned earlier can be addressed. for example, the use of child labor can be minimized by tracking each transaction and knowing the origin of coffee beans [6]. additionally, farmers can receive fairer payments if they adhere to environmentally friendly practices. distributing sales proceeds between coffee roasters and farmers can also be done transparently, thereby supporting fairness. if issues arise with coffee beans, their source can be identified [7]. the benefits of using blockchain technology in the coffee industry are still plentiful. they can provide incentives for researchers to study the design and implementation of record-keeping systems using blockchain technology in the coffee supply chain. the success of the coffee industry in appealing to the global community, particularly among teenagers, is undoubtedly attributed to the satisfaction and acceptance of the technology it encompasses. this has intrigued researchers to comprehend and identify the readiness for implementing blockchain technology in tracking the authenticity of organic coffee. the effectiveness of the information system can be observed through user statements affirming that the current information system is user-friendly and fulfills their needs. typically, the methods frequently employed to evaluate a system are tam (technology acceptance model) and utaut (unified theory of acceptance and use of technology). in this study, researchers utilize the utaut2 adoption theory to measure and determine the factors influencing users to accept and utilize blockchain technology. analyzing the factors that impact the acceptance of blockchain technology in tracking the authenticity of organic coffee is the primary objective of this research. the expected outcomes aim to provide solutions and evaluations for future development utilizing utaut2. testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 55 2. literature review 2.1. blockchain technology blockchain is one of the newest technologies in terms of security, traceability, and transparency. it may be used to handle agreements and physical assets as well as transactions involving both digital and physical assets. blockchain is a distributed/decentralised database (decentralised database) that stores and retrieves data using independent nodes. the distributed ledger is connected to chunks of data sequentially via blockchain technology. each block stores various information, including hashes and unique identifiers of the block itself. the hash identifies and connects this block to all previous and subsequent blocks. therefore, blockchain is a collection of blocks that include linked/connected transaction data (chain) and are ordered by one another. blockchain is a digital data storage system where each block must contain hashed data from the preceding block. each block will reference the previous block, forming a chain. this technology is believed to eliminate the mediators from all digital asset transfers and transactions. this is a by far more independent and safer medium. financial institutions are considering the possibility of using this technology to guarantee transaction security [8]. blockchain technology enables direct data sharing between a more significant number of network members without using middlemen. each transaction is coded and added to an immutable chain of transactions dispersed over all ledgers (nodes), preventing the chain from changing. each member in the network stores a copy of the information linked to each transaction in an independent digital ledger once it has been recorded. every record in the network is time-stamped, encrypted, unchangeable, and connected to every other record [9]. blockchain technology is a decentralised system, which is the technology's primary advantage. collaborating with the third-party organisation or the central institution is unnecessary. it suggests that everyone involved in this blockchain makes the decisions and that the system functions without the need for an intermediary. it is imperative to secure the database whenever a system works with other organizations because there's a potential that the database could be hacked or end up in the wrong hands. the database security process may consume a great deal of time and resources. if blockchain technology is utilised, this issue can be avoided, as blockchain transactions require authorisation to enforce accordance with the limitations. it means that all of the transactions can be independently checked. every action is documented on the blockchain, and the information included in each record is available to all users and cannot be changed or removed. this way the trustworthiness, immutability, and transparency of the blockchain are hereby demonstrated [10]. the primary focus is on the genuine and not worthless interactions between these anonymous individuals. the level of trust can be improved since more procedures and records can be shared [11]. 2.2. food traceability system most traceability standards define traceability as the capacity to follow a product's key characteristics from its point of origin (including its ingredients) to the last stage of the supply chain. four concepts are covered by the various definitions of “traceability”: product history information throughout the supply chain, backward follow-up of ingredients (tracing), forward follow-up of products (tracking), and consistency and clarity in terminology (e.g., “tracking” vs. “tracing”) [12]. the food traceability is a logistics management component that is closely related to the food safety and quality. these quality assurance capabilities rely heavily on 56 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković logistics operations. consider the case of food recalls, which are frequently cited in the literature [13]. even though a thorough collection of traceability information is required for this procedure, the success of the recall process is mostly dependent on the effectiveness of logistical operations and the level of integration between the various supply chain actors. [14]. on the other note, bosona and gebresenbet’s work establishes a direct connection between the purpose of traceability and the conditions of applicability. based on the direction of information flow, forward traceability or tracking is differentiated from backward traceability or tracing [12]. the context of a product recall provides the greatest explanation for the distinction. with the ability to monitor, products can be identified using recall criteria and tracked from the start of the supply chain to the end. secondly, the ability to trace means that the origin of a product and the relationship between its constituent components may be recognised. unique identifiers (or features) for each product need to be defined and bundled into a traceable resource unit to trace products and their constituents (tru). there are three categories of trus [15]: 1. batch unit products that go through identical processing stages, such as milk powder cans, have exact best-before dates and batch numbers. 2. trade unit products that are transferred between actors in the supply chain, such as a box containing milk powder cans with the same batch number. 3. logistic unit products that are grouped into logistics objects for transit or are being stored, such as a pallet of milk powder cans, may carry specific batch numbers. considering these categories, one batch unit might be identical to a trade union. also, one batch unit can contain multiple logistic units could be one batch unit in the event that the production process followed the same steps and that the products were asigned the same batch number. depending on the data being saved, the unit of tractability may be batch, trade, or logistic. traceability is impossible due to the quantity of specific information and the precision required. the qualities of the tracing steps rely on the aims and can be described by the system's depth, and accuracy [16]. capacity refers to the amount of recorded information, profound to the capability of how far forward or backward tracing is feasible, and preciseness to the degree of confidence with which one tru can be identified. each component directly impacts the amount of data a system needs to be able to store and manage and needs to be selected in proportion to the system's goals. 2.3. adoption of blockchain technology in tracking the authenticity of organic coffee developing a decentralized application (dapp) using the pyteal library and algorand blockchain platform for tracing coffee represents a notable leap forward in ensuring the quality of food products and building trust. by harnessing the transparency and immutability provided by blockchain technology, the dapp enables the comprehensive tracing of a coffee item's journey from the farm to the consumer's table. customers can access real-time information regarding the food's origin, quality, and safety [17]. the design of coffee traceability comprises three layers involving multiple stakeholders. these layers represent the actual activities among stakeholders including the process of application as well as the activity of recording and viewing information on the blockchain. every stakeholder can submit data through a dedicated web or mobile application and also use it to accesses information on the chain. this application interacts with the blockchain testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 57 infrastructure to read and write information. the proposed design involves several distinct stakeholders. farmers role is cultivating coffee plantations and product gathering. coffee processors handle further steps processing and customization of green bean coffee to create the final product. manufacturers have a crucial role with the goal to scale up production and produce a final product. the product certification is done by the appropriate national government agency, which serves as the regulatory body. marketplaces, retailers, and cafes are at the end of the chain, purchasing the coffee product in a retail or wholesale fashion and providing it to the to individuals or organizations extracting traceability information about coffee products [18]. 3. research method a combined model based on two well-known frameworks, utaut2 and tam, is used to analyze the blockchain's readiness to track organic coffee production. the unified theory of acceptance and use of technology (utaut) is a widely used model that explains and predicts individuals' technology acceptance and usage. the utaut2 model continues the utaut paradigm and investigates the acceptance and usage of technology in consumer contexts [19]. it takes into account various factors that influence technology adoption. utaut was expanded to utaut2 by adding hedonic motivation, price value, and habits. the utaut2 model consists of four key constructs: 1. performance expectancy relates to the level to which an individual believes using technology could enhance their performance and effectiveness in completing tasks. 2. effort expectancy: this construct refers to a particular technology’s perceived simplicity of use. it assesses the degree to which an individual believes using the technology will be free from effort. 3. social influence: it encompasses the impact of social factors and norms on individuals’ acceptance and general use of technology. it considers the influence of others’ social interactions, opinions, and recommendations. 4. facilitating conditions: this construct considers the necessary infrastructure, both technical and organizational, to support the usage of technology. it includes different factors including the availability of resources, training, and technical support. utaut2 proposes that these four constructs, along with gender, age, experience, and willingness of use, collectively influence an individual’s behavioral intention to use technology. the technology acceptance model (tam) is another broadly acknowledged framework used with the goal of understanding users’ willingness to accept and adopt the technology [20]. by defining traits that potentially indicate an information system’s success or failure and actions that show its flexibility to needs, the tam model is used for the analysis of the adoption of information system technology within businesses. the benefits of information systems that remove user-perceived drawbacks constitute the basis of the tam model [21]. it focuses on two key constructs: 1. perceived usefulness: it reflects how users acknowledge a specific technology could improve their productivity and performance to achieve particular goals or tasks. 2. perceived ease of use: this construct assesses the extent to which users perceive technology as simple to use, requiring minimal effort and complexity. according to tam, these two constructs directly influence users’ attitudes toward using technology, impacting their behavioral intention to adopt it. in analyzing the readiness of using 58 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković blockchain in tracking organic coffee production, the combined model incorporating utaut2 and tam would involve assessing the factors and constructs from both frameworks to determine users’ acceptance and readiness to adopt blockchain technology for tracking organic coffee production in serbia and indonesia. the model would consider the performance expectancy, effort expectancy, social influence, facilitating conditions from utaut2, perceived usefulness and perceived ease of use from tam. the analysis can provide insights into blockchain technology’s potential adoption and acceptance in tracking organic coffee production by evaluating these factors. 3.1. research limitations & hypothesis the selected independent variables are: 1. perceived usefulness, by analogy with the perceived usefulness variable from the tam model. 2. perceived security variable. 3. effort expectancy, by analogy with the effort expectancy variable from utaut2 model. 4. price value, by analogy with the price value variable from utaut2 model. 5. facilitating conditions, by analogy with the facilitating conditions variable from utaut2 model. 6. perceived risk variable 7. social influence, by analogy with the social influence variable from utaut2 model. the selected dependent variable is: 1. behavioral intention to use. the study aimed to explore the readiness of coffee consumers to adopt an intelligent system that utilizes blockchain technology to trace the origin of organic coffee. the research drew upon the utaut2 and tam models to examine consumers’ readiness to use the system. the dependent variable, “behavioural intention to use” akin to behavioral intention in the utaut2 model, was chosen to predict users’ behavior toward a system that has yet to be tested in the real-world conditions. by leveraging these models, the study aimed to gain insights into consumers’ intentions and potential adoption of the blockchain-based tracking system for organic coffee. the following hypotheses were put forward: h1: perceived usefulness has affect on coffee consumers' eagerness to use the system for blockchain-based coffee tracing. h2: perceived security has affect on coffee consumers' eagerness to use the system for blockchain-based coffee tracing. h3: effort expectancy has affect on coffee consumers' eagerness to use the system for blockchain-based coffee tracing. h4: price value has affect on coffee consumers' eagerness to use the system for blockchainbased coffee tracing. h5: facilitating conditions has affect on coffee eagerness willingness to use the system for blockchain-based coffee tracing. h6: perceived risk has affect on coffee consumers' eagerness to use the system for blockchainbased coffee tracing. h7: social influence has affect on coffee consumers' eagerness to use the system for blockchainbased coffee tracing. testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 59 fig. 1 model for testing the readiness to use the system for tracking the origin of coffee 60 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković 3.2. questionnaire design the research aims to gather information about indonesian coffee consumers' readiness to use blockchain technology. the willingness of costumer and coffee producers was studied using a questionnaire based on the utaut2 model and some elements of the tam model. in the initial survey, costumer and coffee producers were informed about the proposed system and asked to complete a questionnaire. the survey questions were designed based on predefined hypotheses and constructs. the respondents are required to rate the level of agreement with each statement using a likert scale ranging from 1 to 5. a rating of 1 indicates complete disagreement with the information, while a rating of 5 indicates entire agreement. an example of a question and its corresponding likert scale answer format is illustrated in the image below: fig. 2 likert scale survey 4. results and discussions in conducting data analysis on research variables, researchers processed descriptive analysis data using smartpls 4.0 in processing statistical data for hypothesis testing. 4.1. descriptive analysis before the researchers tested the validity, reliability, and hypothesis testing, the researchers conducted a descriptive analysis of all the constructs or variables used in this study, namely perceived usefulness, perceived security, effort expectancy, price value, facilitation conditions, perceived risk, and social intention to behavioral intention to use. the purpose of descriptive analysis is to explain the constructs or variables used during the research. each construct has several indicators used by researchers. referring to table 1, the researcher analyzed the demographics of the respondents based on their age, gender, status, education, and country of origin of the respondents. the frequency analysis results based on respondents' data can be seen in table 1. testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 61 table 1 demographic data of respondents a variables values frequency percentage age less than 20 7 2% from 20 to 25 241 70% from 25 to 35 81 23% more than 35 16 15% gender male 147 43% female 198 57% status worker 68 20% student 275 80% unemployed 2 1% retiree 0 0% education elementary education 3 1% highschol education 90 26% bachelor studies 226 66% master studies 17 5% postgraduate studies 9 3% country of residence serbia 243 70% indonesia 101 30% other 1 0.01% table 1 shows that there were a total of 345 respondents from 243 people (70%) in serbia and 101 people (30%) in indonesia, with 7 people (2%) aged less than 20, 241 people (70%) aged from the 20 to 25 years, 81 people (23%) aged from 25 to 35 years, and 16 people (15%) aged more than 35 years. 147 people (43%) were men, and 198 (57%) were women. in addition, 68 people (20%) are workers, 275 people (80%) are students, and 2 people (1%) are unemployed. then the last education of the respondents was 3 people (1%) from elementary education, 90 people (26%) from highschool education, 226 people (66%) from bachelor studies, 17 people (5%) from master studies, and 9 people (3%) from postgraduate studies. 4.2. outer model three main criteria that are used are convergent validity, discriminant validity, and composite reliability. following are the statistical results in the outer model test using the smartpls 4.0 application in figure 3. the value of the loading factor of each indicator on the constructed variable can define the measure of the outer model by conducting convergent validity. an indicator in the outer model measurement can be considered valid if each indicator produces a loading factor with a value of > 0.70 according to predetermined criteria. the value of the loading factor of each indicator on the construct from the outer loading processing results of the initial model and the modified model with smartpls 4.0, is shown in the table 2. 62 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković fig. 3 initial model measurement testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 63 table 2. outer loadings test results indicator initial model modified model b1 0.830 0.830 b2 0.830 0.830 b3 0.715 0.715 b4 0.759 0.759 ee1 0.578 ee2 0.319 ee3 0.107 ee4 0.318 ee5 0.777 0.777 fc1 0.521 fc2 0.848 0.848 fc3 0.313 fc4 -0.232 fc5 -0.167 pr1 0.781 0.781 pr2 0.371 pr3 0.780 0.780 pr4 0.755 0.755 pr5 0.834 0.834 ps1 0.636 ps2 0.664 ps3 0.690 ps4 0.793 0.793 ps5 -0.522 pu1 0.687 pu2 0.765 0.765 pu3 0.655 pu4 0.695 pu5 0.799 0.799 pv1 0.735 0.735 pv2 0.536 pv3 0.052 pv4 0.728 0.728 pv5 0.692 si1 0.494 si2 0.914 0.914 si3 0.355 si4 0.779 0.779 si5 0.405 based on table 2, each research variable in the initial model and the modified model shows differences in the loading factor values of the indicators. in the initial model, several indicators were found that had factor loading values < 0.70 , which indicated that the indicators were invalid, so it was necessary to remove these indicators from the model, namely the indicators pu1, pu3, pu4, ps1, ps2, ps3, ps5, ee1, ee2, ee3, ee4, pv2, pv3, pv5, fc1, fc3, fc4, fc5, pr2, si1, si3, si5. after the indicators were removed from the model, the outer model was tested again , which resulted in a loading factor value in the modified model. the adjusted model data reveals that all loading factor values of the indicators for each variable have a 64 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković value > 0.70, indicating that all construct indicators are valid and nothing else is provided. 4.3. convergent validity for validity measurement, three criteria are used in the study: knowing the value of the loading factor on each indicator and ave. the results of data processing are shown in figure 4. fig. 4 convergent validity testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 65 4.4. discriminant validity based on the results in table 3, all cross-loading values for every indicator of corresponding latent variable have the maximum cross-loading value compared to the cross-loading value associated with other latent variables. this indicates that each latent variable or construct has demonstrated excellent discriminant validity. table 3. discriminant validity bi ee fc pr ps pu pv si bi 0.774 ee 0.249 1 fc 0.508 0.15 1 pr 0.28 0.09 0.29 0.788 ps 0.434 0.13 0.415 0.03 1 pu 0.361 0.06 0.231 0.053 0.18 0.84 pv 0.473 0.27 0.376 0.003 0.27 0.37 0.79 si 0.419 0.17 0.364 0.03 0.26 0.45 0.46 0.87 4.5. validity and reliability test (ave, cronbach alpha, composite reliability) table 4. ave test results, cronbach alpha, composite reliability cronbach’s alpha composite reliability (rho_a) composite reliability (rho_c) average variance extracted (ave) bi 0.776 0.779 0.856 0.599 pr 0.797 0.812 0.867 0.621 pu 0.774 0.789 0.823 0.699 pv 0.702 0.706 0.769 0.625 si 0.786 0.793 0.858 0.752 considering the data from table 4, it can be stated that all constructs or variables meet valid criteria. this is evidenced by the ave value > 0.50 according to the recommended criteria. based on the cronbach alpha test on display referred to in table 4, it can be concluded that all variables or components are reliable. evidenced by the cronbach alpha value according to the recommended cut of value, which is > 0.70. based on the composite reliability test in table 4, it can be stated that each variable or construct meets the reliability criteria. evidenced by the composite reliability value according to the recommended cut of value, which is > 0.70. 4.6. inner model the testing of the inner or structural model is carried out to know the relationship between the construct, r square, and the significance value of the research model. the following is a form of the structural model that has been tested using the bootstrapping test to determine the value of the r-square and t-statistics, which can be seen in figure 5. 66 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković fig. 5 bootstrapping structural models while testing the hypothesis for each research variable, researchers used smartpls 4.0 with a structural model through bootstrapping. by using a bootstrapping procedure that can show how much an independent variable can influence the dependent variable, the following is councluded from the table 5 data showing the r-square test results. testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 67 table 5. r-square test results r-square r-square adjusted bi 0.483 0.473 the results show that the value of the adjusted r-square dependent variable behavioral intention to use is 0.473. this shows that the variable behavioral intention to use can be influenced by the independent variables perceived usefulness, perceived security, effort expectancy, price value, facilitating conditions, perceived risk, and social influence on behavioral intention to use by 47.3%, and other variables outside the model influence the remaining 52.7%. 4.7. hypothesis test this study has three hypotheses, namely perceived usefulness (h1), perceived security (h2), effort expectancy (h3), price value (h4), facilitating conditions (h5), perceived risk (h6), and social influence (h7) on behavioral intention to use. in testing the hypothesis, the value generated by the t-statistics through the bootstrapping test will be the basis for determining whether the formulated hypothesis is accepted or rejected. table 6 shows the results of the statistics. table 6. t-statistic test results original sample (o) sample mean (m) standard deviation (stdev) t statistics (|o/stdev|) p values conclusion pu -> bi 0.164 0.167 0.054 3.029 0.002 h1 is accepted ps -> bi 0.226 0.226 0.046 4.911 0.000 h2 is accepted ee -> bi 0.133 0.131 0.046 2.919 0.004 h3 is accepted pv -> bi 0.203 0.204 0.053 3.812 0.000 h4 is accepted fc -> bi 0.176 0.173 0.055 3.208 0.001 h5 is accepted pr -> bi -0.236 -0.241 0.041 5.753 0.000 h6 is accepted si -> bi 0.101 0.102 0.052 1.977 0.042 h7 is accepted the results of the test regarding hypothesis are following: 1. the test results on the first hypothesis regarding the relationship between perceived usefulness and behavioral intention to use show that the t-statistic results are worth 3.029, and the p-values are 0.002. the resulting t-statistic value > t-table value is 1.96 (3.029 > 1.96), and the resulting p-values are < 0.05 (0.002 < 0.05). this shows that perceived ease of use significantly effects an attitude toward using, which means it is in accordance with the first hypothesis, namely, perceived usefulness affects coffee consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the first hypothesis (h1) is supported. 2. the test results on the second hypothesis regarding the connection between perceived security and behavioral intention show that the t-statistic results have a value of 4.911 and the results of p-values have a value of 0,000. the resulting t-statistic value > t-table value is 1.96 (4.911 > 1.96) and the resulting p-values are < 0.05 (0.000 < 0.05). this shows that perceived security is significant for behavioral intention, which means it is in accordance with the second hypothesis, namely perceived security affects coffee 68 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the second hypothesis (h2) is supported. 3. the test results on the third hypothesis related to the connection between effort expectancy and behavioral intention show that the t-statistic results have a value of 2.919 and the results of p-values have a value of 0.004. the resulting t-statistic value > t-table value is 1.96 (2.919 > 1.96) and the resulting p-values are <0.05 (0.004 <0.05). this shows that effort expectancy is significant to behavioral intention, which means it is in accordance with the third hypothesis, namely effort expectancy affects coffee consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the third hypothesis (h3) is supported. 4. the test results on the third hypothesis regarding the connection between price value and behavioral intention show that the t-statistic results are worth 3,812 and the p-values are 0.000. the resulting t-statistic value > t-table value is 1.96 (3.812 > 1.96) and the resulting p-values are < 0.05 (0.000 < 0.05). this shows that effort expectancy is significant to behavioral intention, which means it is in accordance with the third hypothesis, namely price value affects coffee consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the fourth hypothesis (h4) is supported. 5. the test results on the third hypothesis related to the connection between facilitation conditions and behavioral intention show that the t-statistic results are worth 3.208 and the p-values are 0.001. the resulting t-statistic value > t-table value is 1.96 (3.208 > 1.96) and the resulting p-values are < 0.05 (0.001 < 0.05). this shows that effort expectancy is significant to behavioral intention, which means it is in accordance with the third hypothesis, namely facilitation condition affects coffee consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the fifth hypothesis (h5) is supported. 6. the test results on the third hypothesis related to the connection between perceived risk and behavioral intention show that the t-statistic results have a value of 5.753 and the results of p-values have a value of 0,000. the resulting t-statistic value > t-table value is 1.96 (5.753 > 1.96) and the resulting p-values are < 0.05 (0.000 < 0.05). this shows that effort expectancy is significant to behavioral intention, which means it is in accordance with the third hypothesis, namely perceived risk affects coffee consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the sixth hypothesis (h6) is supported. 7. the test results on the third hypothesis regarding the connection between social intention and behavioral intention show that the t-statistic results have a value of 1.947 and the results of p-values have a value of 0.042. the resulting t-statistic value > t-table value is 1.96 (1.977 > 1.96) and the resulting p-values are < 0.05 (0.042 < 0.05). this shows that effort expectancy is significant to behavioral intention, which means that it is in accordance with the third hypothesis, namely social intention affects coffee consumer willingness to use the system for blockchain-based coffee tracking. conclusion is that the seventh hypothesis (h7) is supported. 4.8. discussion this research was conducted with the aim of analyzing the extent of consumer readiness to operate blockchain technology to trace organic coffee from producer to producer. this study testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 69 analyzes the readiness of using blockchain technology in tracking organic coffee through a model called tam. the variables used in conducting this specific research are perceived usefulness, perceived security, effort expectancy, price value, facilitating conditions, perceived risk, and social influence on behavioral intention to use. in processing the data, researchers used the help of smartpls 4.0 software to find out whether each variable has indicators that can be declared valid, which means it meets predetermined criteria. 4.8.1. effect of perceived usefulness on behavioral intention in using blockchain technology to track organic coffee the output data processing results show an influence between perceived usefulness and behavioral intention in using blockchain technology to track organic coffee. therefore, we can accept the first hypothesis (h1). several factors make respondents have a positive attitude towards using blockchain technology, including blockchain can provide benefits such as increasing security, transparency, and reliability in tracking organic coffee. respondents tend to have a high perception of the usefulness of this technology. thus, respondents chose to operate this technology, especially in tracking organic coffee. respondents' answers that agreed with the statements given in the questionnaire illustrated that there was a positive impact in applying blockchain technology, which could support the respondents' readiness as consumers to increase value added in the field of tracking organic coffee. this shows that the higher use of blockchain technology due to the ease of operation and access makes consumers more tending to have a stronger intention to use the technology and causes a higher positive attitude received from the application of blockchain applications by respondents. 4.8.2. perceived security influence on behavioral intention in using blockchain technology to track organic coffee in this context, the output results of data processing indicate an influence between perceived security and behavioral intention in using blockchain technology to track organic coffee. this influence suggests that when people perceive the safety of using blockchain technology to track organic coffee, they tend to have a higher level of intention to use the technology. there are several reasons why this conclusion was obtained and the second hypothesis (h2) was accepted. first, trust in security: blockchain technology has been recognized as a secure and decentralized technology. high-security perceptions of this technology can affect user behavior in adopting and using this technology. if users feel that blockchain technology can provide a sufficient level of security for tracking organic copies, it is more probable that they intend to use it. second, the belief in transparency: one of the advantages of blockchain technology is its ability to provide high transparency. in the context of tracking organic coffee, blockchain technology can assure that information about the origin of organic coffee is verifiable and cannot be manipulated. this perception of transparency can give consumers a sense of trust, which in turn can influence their intention to use the technology. third, personal data security: in using blockchain technology to track organic copies, users may need to provide some of their personal information. perceptions of security related to privacy and personal data protection are important factors that can influence user intentions. if users believe blockchain technology can provide adequate protection to their personal data, they will be more inclined to use it. 70 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković 4.8.3. effect of effort expectancy on behavioral intention in using blockchain technology to track organic coffee in this context, the output results of data processing show an influence between effort expectancy and behavioral intention in using blockchain technology to track organic coffee. these results conclude that the third hypothesis (h3) is accepted. following are some of the reasons why using these results we conclude that there is a connection between effort expectancy and behavioral intention. accorind to tam, it is stated that factors such as user perceptions of ease of use and benefits derived from technology will influence their behavioral intention in adopting the technology. in this case, effort expectancy is a factor that describes the user's perception of how easy or difficult it is to use blockchain technology. if users expect that using blockchain technology to track organic coffee requires reasonable effort, they will likely have a higher intention to adopt it. then, the rationale: if users believe that using blockchain technology will provide significant benefits, such as increased transparency and authenticity in tracking organic copies, they may be more likely to show a solid intention to use it. however, if they feel that using the technology requires too much effort, their intention to use it may decrease. thus, the conclusion is that the third hypothesis (h3) is accepted, which means there is a significant influence between effort expectancy and behavioral intention in using blockchain technology to track organic coffee. this suggests that users tend to have a stronger intention to use blockchain technology if they positively perceive the required effort. 4.8.4. effect of price value on behavioral intention in using blockchain technology to track organic coffee based on the output data processing which shows an influence between price value on behavioral intention, and using blockchain technology to track organic coffee, it can be stated that the h4 hypothesis is accepted. this indicates that price value significantly influences behavioral intention in using blockchain technology to track organic coffee. some of the reasons why this is the case could include such as fair price value: if the price value offered for the use of blockchain technology in tracking organic coffee is considered reasonable or commensurate with the benefits provided, users are more inclined to have a higher level of intention to adopt the technology. if users feel that the costs incurred are worth the benefits received, then they will be more likely to be encouraged to use the technology. then, trust in quality. using blockchain technology to track organic coffee can give consumers confidence in the quality and authenticity of the product. suppose users believe that this technology can ensure transparency and legitimacy of information about the source and quality of the organic coffee they buy. in that case, they will be more likely to adopt the technology. in this case, price value becomes important because users will see it as an investment to get a quality product. in addition, the long-term benefits of using blockchain technology to track organic coffee can provide long-term benefits, such as strengthening supply chains, increasing security, and increasing consumer confidence. if users understand these benefits and see them as an investment for the future, they are more willing to pay a higher price to use the technology. all of the factors above can contribute to the influence of price value on behavioral intention in using blockchain technology to track organic coffee. the data processing results show a significant correlation between the two variables. therefore, the fourth hypothesis (h4) is accepted. testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 71 4.8.5. effect of facilitating conditions on behavioral intention in using blockchain technology to track organic coffee considering the results of the data processing output which shows the effect of the facilitation condition on behavioral intention, it can be stated that the h5 hypothesis can be accepted. in the research or data processing carried out, the results show a relationship or influence between the facilitation conditions provided (facilitation conditions) and behavioral intentions (behavioral intention) in using blockchain technology to track organic coffee. in other words, when facilitation condition factors, such as the availability of adequate technological infrastructure, good accessibility, adequate training, ease of use, and support from related parties, are met, then this positively affects the intention or desire of individuals or groups to uses blockchain technology to track organic coffee. by obtaining these results, the conclusion that can be drawn is that the fifth hypothesis (h5) is accepted. this hypothesis states that there is a relationship between facilitation conditions and behavioral intention in the context of using blockchain technology to track organic copies. 4.8.6. effect of perceived risk on behavioral intention in using blockchain technology to track organic coffee the output results of data processing show that there is an influence between perceived risk and behavioral intention in using blockchain technology to track organic coffee. in this context, it is stated that the h6 hypothesis can be accepted. in essence, these results suggest that individuals' perceived risk associated with using blockchain technology to track organic coffee has an influence on their behavioral intention to use the technology. in this case, the perception of risk could include concerns about data security, uncertainty regarding the reliability of technology, or even potential financial loss. data processing and analysis found that the higher is the degree of risk perceived by individuals regarding the use of blockchain technology, the lower is the degree of their behavioral intention to use the technology to track organic coffee. in other words, risk perception influences an individual’s intention to adopt blockchain technology in this specific context. this conclusion can provide important insights for researchers, business people, or practitioners interested in applying blockchain technology in the agriculture or tracking organic products through the supply chain. by understanding that perceived risk affects individual intentions, interested parties can take steps to reduce perceived risk and increase the acceptance of blockchain technology for tracking organic coffee. 4.8.7. effect of social intention on behavioral intention in using blockchain technology to track organic coffee based on the output data processing results which show an influence between social intention on behavioral intention, as well as the use of blockchain technology to track organic coffee, it is stated that the h7 hypothesis can be accepted. first, it is important to understand the meaning of the two mentioned constructs. social intention refers to a person’s intention to act following social norms and values that exist in society. meanwhile, behavioral intention relates to a persons intention to act according to a certain behavior. in this context, the use of blockchain technology to track organic coffee is a behavior that is being researched. by observing the processing of the resulting data, if there 72 s. nudin, m. suvajdžić, p. lukovac, d. barać, b. radenković is a significant influence between social intention and behavioral intention in using blockchain technology to track organic coffee, it can be stated that a person’s social intention, which includes factors such as awareness of the importance of organic coffee, concern for the environment, shopping ethics, and social justice, can be factors influencing ones intention to use blockchain technology to track organic coffee. for example, suppose a person has a high social intention to support organic and sustainable products, and is aware of the importance of tracing the organic coffee footprint from farmer to consumer. in that case, the individual will likely have a strong behavioral intention to use blockchain technology to trace coffee. organic. these results suggest that social factors are important in shaping individual intentions to use blockchain technology to track organic coffee. therefore, the conclusion that the seventh hypothesis (h7) is accepted is reasonable considering the results of the data processing output. 5. conclusion the purpose of this research is to analyze the influence of independent variables namely perceived usefulness, perceived security, effort expectancy, price value, performance expectancy, facilitating conditions, perceived risk, and social influence on the dependent variable, namely readiness of consumers and producers to operate blockchain technology through the tam and utaut method. based on the research that has been carried out, the results show that there is an influence between perceived usefulness, perceived security, effort expectancy, price value, facilitating conditions, perceived risk, and social influence on behavioral intention to use. the influence between variables can be proven by testing the hypothesis, which shows that positive value directions support h1, h2, h3, h4, h5, h6, and h7. this means that consumers will find using blockchain technology to track organic coffee easy. they also believe that using blockchain makes performance faster, more efficient and can increase the productivity of coffee making. in addition, consumers can feel that blockchain technology is a good solution and is not burdened in the use or operation of the supply chain in making organic coffee. this impacts their decision to use blockchain in their activities, especially those related to the coffee supply chain sector and they recommend using blockchain to others. this proves that, to date, consumers are better prepared to use blockchain to track organic coffee. future research could include testing readiness of other stakeholders and developing a prototype of the proposed system. acknowledgement: the paper is a part of the research done within the project 36038. the authors would like to thank the algorand foundation for sponsoring the w3 algorand hackathon and making all of this possible and much easier for the contestants. references [1] j. a. barreto peixoto, j. f. silva, m. b. p. p. oliveira, and r. c. alves, "sustainability issues along the coffee chain: from the field to the cup", comprehensive reviews in food science and food safety, vol. 22, no. 1. john wiley and sons inc, pp. 287–332, 2023. [2] s. r. lesher, "caffeine, mental health, and sleep quality in students: a mediation approach", departemental honors in psychology, lycoming college, pp. 1–45, 2013. [3] d. j. whalen et al., "caffeine consumption, sleep, and affect in the natural environments of depressed youth and healthy controls", j pediatr psychol, vol. 33, no. 4, pp. 358–367, 2008. testing readiness of adoption of blockchain technology in tracking the authenticity of organic coffee 73 [4] j. shriver, j. largaespada, and m. estela gutiérrez, "sustainable good agriculture practices manual", matagalpa, may 2017. [5] h. boydell, "sustainability in coffee: what are the main issues?", nov. 15, 2018. https://perfectdailygrind. com/2018/11/sustainability-in-coffee-what-are-the-main-issues/ (accessed jun. 23, 2023). [6] a. patel, "the top advantages of blockchain for businesses", jul, 2020. https://www.smartdatacollective. com/top-advantages-blockchainfor-businesses/ (accessed jun. 23, 2023). [7] moyee coffee, "blockchain and coffee" https://moyeecoffee.ie/pages/building-a-digital-supply-chain. (accessed jun 20, 2023). [8] md saef ullah miah, mashiour rahman, md. saddam hossain, and aneem al ahsan, blockchain for data analytics, cambridge scholars publishing, 2019, chapter introduction to blockchain. [9] i. b. pugna and a. duţescu, "blockchain – the accounting perspective", in proceedings of the international conference on business excellence, vol. 14, no. 1, pp. 214–224, jul 2020. [10] a. bahga and v. k. madisetti, "blockchain platform for industrial internet of things", journal of software engineering and applications, vol. 9, no. 10, pp. 533–546, 2016. [11] a. songara and l. chouhan, "blockchain: a decentralized technique for securing internet of things", international conference on emerging trends in engineering innovations & technology management (icet: eitm-2017), hamirpur, 2017. [12] p. olsen and m. borit, "how to define traceability", trends in food science and technology, vol. 29, no. 2. pp. 142–150, 2013. [13] t. bosona and g. gebresenbet, "food traceability as an integral part of logistics management in food and agricultural supply chain", food control, vol. 33, no. 1. pp. 32–48, 2013. [14] m. bourlakis and c. bourlakis, "integrating logistics and information technology strategies for sustainable competitive advantage", journal of enterprise information management, vol. 19, no. 4, pp. 389–402, 2006. [15] m. m. aung and y. s. chang, "traceability in a food supply chain: safety and quality perspectives,” food control, vol. 39, no. 1, pp. 172–184, 2014. [16] e. golan, b. krissoff, f. kuchler, l. calvin, k. nelson, and g. price, "traceability in the u.s. food supply: economic theory and industry studies", 2004. [online]. available: www.ers.usda.gov. [17] s. nudin, a. labus, p. lukovac, and m. suvajdžić, "dapp for food traceability based on pyteal and algorand", in febt conference, m. despotović-zrakić, z. bogdanović, a. labus, d. barać, and b. radenković, eds., belgrade: faculty of organizational sciences, university of belgrade, jun. 2023, pp. 211–216. [18] a. alamsyah et al., "blockchain traceability model in the coffee industry", journal of open innovation: technology, market, and complexity, vol. 9, no. 1, p. 100008, 2023. [19] v. venkatesh, s. m. walton, and j. y. l. thong, "consumer acceptance and use of information technology: extending the unified theory of acceptance and use of technology", 2012. [online]. available: http://about.jstor.org/terms [20] c. ching-ter, j. hajiyev, and c. r. su, "examining the students’ behavioral intention to use e-learning in azerbaijan? the general extended technology acceptance model for e-learning approach", comput educ, vol. 111, pp. 128–143, 2017. [21] f. d. davis, r. p. bagozzi, and p. r. warshaw, "user acceptance of computer technology: a comparison of two theoretical models", manage sci, vol. 35, no. 8, pp. 982–1003, 1989. 12392 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 561 – 579 https://doi.org/10.2298/fuee2404561v © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper successive irradiation and bias temperature stress induced effects on commercial p-channel power vdmos transistors sandra veljković, nikola mitrović, vojkan davidović, emilija živanović, goran ristić, danijel danković* university of niš, faculty of electronic engineering, niš, serbia orcid ids: sandra veljković https://orcid.org/0000-0001-9510-7465 nikola mitrović https://orcid.org/0000-0001-8981-637x vojkan davidović https://orcid.org/0000-0003-3889-9595 emilija živanović https://orcid.org/0000-0001-9011-7111 goran ristić https://orcid.org/0000-0001-7603-6243 danijel danković https://orcid.org/0000-0002-0214-2606 abstract. this study examines the effects of negative bias temperature (nbt) stress on irradiated commercial p-channel power vdmos transistors, with a focus on contribution to threshold voltage shift of changes in gate oxide charge and interface traps. the research addresses the critical reliability concerns for these transistors, as shifts in the threshold voltage can notably influence device performance, particularly under conditions of elevated temperature and negative gate oxide fields. considering that vdmos transistors are power devices, high temperatures occur during their operation, which can cause nbt effects, and this definitely affects normal operation. furthermore, the study investigates the implications of irradiation on the electrical parameters of vdmos power transistors, highlighting the need for a thorough understanding of these effects. the experimental methodology includes both irradiation and subsequent nbt stress application. this paper provides a detailed analysis of both static and pulsed nbt stressing, with an emphasis on novel stress signals related to practical applications. the data presented in the paper were obtained by exposing components to nbt stresses with different polarizations on the gate, which were previously exposed to radiation to different doses, with and without polarization. also, the results with different frequencies applied during nbt stress are presented. results from the study elucidate the roles of gate oxide charge and interface traps in contributing to threshold voltage shifts, thereby offering critical insights into the reliability of p-channel power vdmos transistors in various operational stress scenarios. self-heating during both the operational and cooling phases of fresh and previously irradiated components were measured using ir camera these findings are received december 29, 2023; revised june 23, 2024 and august 14, 2024; accepted august 19, 2024 corresponding author: sandra veljković university of niš, faculty of electronic engineering, aleksandra medvedeva 4, 18000 niš, serbia e-mail: sandra.veljkovic@elfak.ni.ac.rs *an earlier version of this paper was presented at the ieee 33rd international conference on microelectronics (miel 2023), 16-18 october 2023, niš, serbia [1] https://orcid.org/0000-0001-9510-7465 https://orcid.org/0000-0001-8981-637x https://orcid.org/0000-0003-3889-9595 https://orcid.org/0000-0001-9011-7111 https://orcid.org/0000-0001-7603-6243 https://orcid.org/0000-0002-0214-2606 mailto:sandra.veljkovic@elfak.ni.ac.rs 562 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković instrumental for the design and operation of electronic systems that utilize these transistors, ensuring improved reliability and performance. key words: reliability study, gate oxide charge, interface trap, threshold voltage, irradiation, self-heating 1. introduction the vertical double diffused metal-oxide semiconductor (vdmos) power transistor exhibits distinct characteristics that have established its utility across diverse commercial and specialized applications. notably, vdmos transistors possess a high drain-to-source breakdown voltage and can accommodate substantial drain currents. these attributes render them indispensable in the regulation of power within household electrical appliances, industrial machinery, and military electronics. additionally, they play a critical role in the functioning of switching power supplies and audio amplifiers and are integrated into complex systems serving both primary and ancillary functions in the automotive sector. given their deployment in various applications, vdmos power transistors are often subjected to rigorous operational conditions and stresses. this has engendered a growing interest in the assessment of their performance and behavior in specific contexts and environmental scenarios, underscoring the imperative for their reliable operation. however, the reliability and longevity of these devices are closely linked to variations in threshold voltage (vt). the threshold voltage is a pivotal parameter in vdmos power transistors, significantly influencing their operational mode. particularly in p-channel mosfets operating at elevated temperatures, between 100 °c and 250 °c, and subjected to negative gate oxide fields, from 2 mv/cm to 6 mv/cm, instability issues associated with negative bias temperature instabilities (nbti) [2] may arise. the phenomenon of threshold voltage shift is notably observed in certain applications where power transistors are exposed to severe operational conditions and various forms of stress. specifically, radiation environments can induce significant degradation in the electrical parameters of vdmos power transistors [3]. during the exposure to irradiation, notable changes such as reductions in transconductance and breakdown voltage, an increase in leakage current, and crucially, alterations in threshold voltage can be observed [4, 5]. deviations in any of the designed parameters of these devices beyond their specified ranges may lead to failure. consequently, investigating the processes underlying nbti effects, as well as radiationinduced effects, is critically important [6]. besides the high susceptibility of pmos transistors to individual stress factors, there are applications in which they may encounter simultaneous nbt stress and irradiation. given the constraints in applying nbt stress and radiation concurrently, these stress factors were applied sequentially in the conducted experiments. additionally, given the widespread application of p-channel vdmoss in high-frequency switching circuits, attributed to their superior switching performance [7-10], it becomes crucial to investigate the behavior of these devices under pulsed stress conditions, as such conditions are prevalent in most practical circuit applications. this paper highlights the practical deployment of p-channel power vdmoss [11], with a primary focus on elucidating the underlying physics and processes during static and pulsed nbt stress. specifically, it addresses the effects of novel stressing signals that these power vdmoss encounter in realworld applications. these effects are attributed to electrochemical processes that generate and/or activate defects within the gate oxide and at the interface between the gate oxide and silicon [12 successive irradiation and bias temperature stress induced effects on commercial p-channel... 563 14]. both the gate oxide charge and interface traps contribute to the increase in the threshold voltage (in absolute value). this paper seeks to further elucidate the effects observed in p-channel power vdmos transistors subjected to the irradiation and nbt stress by specifically analyzing the contributions of the gate oxide charge (δvot) and interface traps (δvit) to the resultant threshold voltage shifts (δvt). this analysis aims to provide valuable insights into addressing reliability concerns associated with devices integrated into the electronic equipment [15-17]. 2. literature review despite extensive research over the years into the reactions and processes occurring in vdmos power transistors under nbt stress and irradiation, this topic remains highly relevant. many authors analyze the processes from various perspectives. for example, in the paper [5] mosfets were exposed to gamma radiation at varying doses to investigate the mechanisms of the radiation-induced interface trap generation and oxide-trapped charge accumulation. for the first time, the influence of the channel orientation on radiation effects was explored. the findings revealed an initial positive shift in the threshold voltage at low irradiation doses, followed by a negative shift as the dose increased. at higher doses, the rapid generation of radiation-induced interface traps prevailed over the accumulation of oxide-trapped charges, resulting in a positive shift in threshold voltage. besides the radiation, nbt is additionally elucidated in [18]. in that paper, the authors investigate the impact of the hydrogen molecule release on nbti through the lowtemperature pre-treatment (ltpt) in p-channel power vdmos transistors. they found that the threshold voltage (th) behavior under nbts shows two phases: an initial rapid increase due to interface traps and oxide charges, followed by the stabilization. ltpt intensifies the th increase during nbts by generating more interface traps, indicating that while ltpt enhances overall device performance, it does not mitigate nbti. additionally, ltpt accelerates the hydrogen molecule formation, promoting the oxide charge conversion to interface traps and accelerating the si-h bond breakdown, suggesting that reducing hydrogen-related impurities can help mitigate nbti. it can be observed that increasing efforts are being directed towards developing models that encompass various parameters and predict their behavior. in that style, in the paper [19] authors examined the degradation of the on-state resistance in power mosfets under bias temperature instability. by dividing the resistance into nbti-affected and unaffected parts, the authors developed a first-order linear model to predict the resistance behavior under high gate voltage and temperature. furthermore, the paper [20] proposes a comprehensive model for describing the threshold voltage instability during and after nbt stress in mos structures. it integrates three types of traps: interface traps, border traps, and bulk traps, yielding a detailed yet manageable framework. to validate the model, separate measurements of trap contributions to the threshold voltage shift are suggested, allowing comparisons with model predictions. during stress, border traps have minimal impact, comprising only around 2% of the threshold voltage shift, while the recovery is primarily governed by border traps alongside interface traps. the model requires only two free parameters for the recovery, demonstrating its efficiency and versatility across various experimental conditions without parameter adjustments. its strengths include separate extraction of trap contributions, validation across diverse conditions, and 564 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković facilitation of accurate reliability assessments for time-to-failure predictions. additionally, there are studies focusing on radiation modeling [21], as well as works focusing on the analysis and modeling of pbt stress [22]. in recent years, there has been a significant attention in studies focusing on nbti [23], hot carrier injection (hci) [24], and time-dependent dielectric breakdown (tddb) [25]. the advent of new measurement techniques, which depict effects that were previously undetectable, has led to a substantial interest in investigating nbti, particularly the electrochemical mechanisms underlying the observed changes. this expanding interest has catalyzed a series of investigations by various research groups. table 1 summarizes some of the recent studies on these aspects. table 1 recent investigations obtained by various research groups different aspects of research paper's first author and year ir ra d ia ti o n n b t i st re ss p b t i st re ss b t i an d o th er st re ss es d et er m . o f tr ap s m o d el in g a n d s im u la ti o n t c a d s im u l. t ra n sf er ch ar ac te ri st ic s r ec o v er y a ct iv at io n en er g y e n er g y b an d s e le ct ro . re ac ti o n s m ag n et is m l if et im e grasser et al. in 2011 [2] x x x x x zhang et al. in 2023 [5] x x x x x qin et al. in 2019 [6] x x x x x bhattacharjee et al. in 2022 [8] x x x zeng et al. in 2011 [13] x x x sun et al. in 2011 [14] x x x x tripathy et al. in 2022 [15] x x x li et al. in 2023 [16] x x x x x lazzaz et al. in 2022 [17] x x x liu et al. in 2024 [18] x x x x x wang et al. in 2023 [19] x x x x irrera et al. in 2024 [20] x x x x x liu et al. in 2023 [21] x x x x x x ye et al. in 2018 [22] x x x x yang et al. in 2022 [26] x x x x x xue et al. in 2024 [27] x x x x x zhao et al. in 2024 [28] x x x x x x x rinaudo et al. in 2024 [29] x x x guo et al. in 2022 [30] x x biswas et al. in 2024 [31] x x x x x steinmann et al. in 2024 [32] x x x x x thakor et al. in 2024 [33] x x x x x x x bonaldo et al. in 2024 [34] x x x x x x x wang et al. in 2024 [35] x x x x contamin et al. in 2024 [36] x x x x x ghosh et al. in 2024 [37] x x singh et al. in 2023 [38] x x zheng et al. in 2023 [39] x x x li et al. in 2024 [40] x x x x x liu et al. in 2024 [41] x x x x x tahi et al. in 2021 [42] x x tahi et al. in 2021 [43] x x successive irradiation and bias temperature stress induced effects on commercial p-channel... 565 2. experimental procedure over the years, a significant number of experiments have been conducted by this research group, addressing both radiation effects and negative bias temperature stresses. these efforts have closely followed global scientific trends, the findings of other researchers, and the requirements for supplementing our own experiments. consequently, a wide range of stress combinations, reflecting those encountered in real-world applications, have been realized. throughout this paper, components under commercial code irf9520 [9] are analyzed. these components are power vdmos transistors, with the silicon gate and p type of the channel. due to the very thick oxide of the gate, which is around 100 nm, and the presence of 1650 hexagonal cells, these devices can hold high values of currents and voltages. the individual components were encapsulated within the plastic to220 packaging, providing the space for mounting the heatsink. generally, there are two main parts of the experiment, device irradiation and device negative bias temperature stress. the process of irradiation took place at the institute for nuclear sciences, which is located in vinča, serbia. the metrological laboratory, which is part of the department of radiation and environmental protection, carried out the irradiation. the devices were exposed to co-60 gamma radiation at a dose rate of 0.5 gy(sio₂)/min, with cumulative doses reaching 30 gy, 60 gy, 75 gy, 90 gy, and 120 gy with different polarizations during the process. in fig. 1 it can be seen the schematic representation of used equipment. fig. 1 illustration of the experimental setup for the irradiation study irradiation was performed at room temperature under conditions both with and without gate voltage applied, while the source and drain terminals were maintained at ground potential. the application of low-dose rate irradiation to electronic equipment presents challenges. the current problem concerns the operational efficacy of the components, as the user is unaware of the processes by which the parameters of these components are modified. the subsequent critical experimental phase involved the nbt stress, conducted at the laboratory for microelectronics and electronic components within the faculty of electronic engineering. for this part of the experiment, two sets of equipment are necessary, both schematically presented in fig. 2 and fig. 3. fig. 2 clearly shows the presence of a signal generator that allows the component to be exposed to accurately defined signals that are specific to certain applications. the figure also presents an oscilloscope used to verify signal accuracy, along with a heating chamber facilitating experiments at elevated temperatures. in nbt experiments, the components are usually subjected to a high bias, which requires the use of a power source. 566 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković fig. 2 schematic representation of the stress setup fig. 3 schematic representation of the i-v measurement setup the second part of this setup (fig. 3) includes devices for measuring i-v characteristics. for the source measurement unit (smu), a keysight b2901a was utilized, controlled via computer and corresponding software. to conduct measurements, samples undergo stress interruption, their i-v characteristics are measured, and then they are returned to stress. after obtaining the i-v characteristics, the midgap method was used to derive most of the results discussed in this paper. the data analysis and results were generated using a custom-written script in octave software. from these i-v characteristics, the threshold voltage change is determined, which is crucial for further vdmos application. details of the experiments are schematically illustrated in the following diagrams, fig. 4 and fig. 5. at the start, a large set of samples was irradiated to different doses at room temperature. these dose values were 30 gy, 60 gy, 75 gy, 90 gy, and 120 gy, with samples being irradiated under different polarizations of -10 v, 0 v, and +10 v. following this phase of the experiment, a spontaneous recovery at room temperature without gate bias was conducted, fig. 4 and fig. 5. subsequently, the second, highly significant part of the experiment, nbt stress, was performed. an important aspect is that fresh components were also subjected to nbt stress within the scope of the experiments. two types of nbt stress were applied: static and pulsed stress, fig. 4 and fig. 5. during static nbt stress, the components were subjected to a temperature of 175 °c with an applied gate voltage of -45 v for 168 hours. as can be observed, components with all absorbed doses were subsequently subjected to the static nbt stress. on the other hand, not all irradiated components were subjected to the pulsed nbt stress. these groups of components will be the focus of investigation in some future experimental procedures. the pulsed nbt stress process consisted of two phases. successive irradiation and bias temperature stress induced effects on commercial p-channel... 567 fig. 4 schematic representation of the experimental conditions during irradiation and subsequent static nbt stress fig. 5 schematic representation of the experimental conditions during irradiation and subsequent pulsed nbt stress in the first part of the pulsed nbt stress, with parameters f = 10 khz and dtc = 50 %, the gate voltage of – 45 v was applied to the devices irradiated up to 30 gy, 40 gy and 90 gy. in the second part of the experiment, the gate voltage of – 50 v was applied only to the irradiated devices up to 30 gy. these components were subjected to two different types of signals: 1) f = 10 khz and dtc = 50 % (controlling the motor with the pwm signal); 2) f = 1 hz (10 khz) i.e. in the first half of the period consists of the pwm signal (f = 10 khz, dtc = 50 %), and in the second half of the period, the motor was turned off (in signal of the frequency of 1 hz, it is embedded part of 10 khz) [11]. to better elucidate the experimental results obtained from previous experiments, a subset of samples that had not been previously irradiated was subjected to the pulsed 568 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković nbt stress. the experimental conditions are schematically depicted in fig. 6. it can be seen that the fresh samples were stressed with signals of f = 10 khz and vg = -45 v, and f = 1 hz, f = 10 khz, f = 1 hz (10 khz), and vg = -50 v, while dtc of all signals was 50 % (continuously turning the motor on and off in 0.5 s intervals). all samples were submitted to post-stress annealing. subsequently, not all results are presented, as such comprehensive analysis would exceed the scope of this study; however, characteristic combinations are provided. fig. 6 schematic representation of the experimental conditions during nbt stress of fresh components the following tables, table 2 and 3, list specific samples, their names, and the stress conditions to which they were subjected. it is noteworthy that the difference in sample names arises because the samples were procured at different times. to avoid any confusion regarding the origin of each sample, distinct labels are used. in conducting the experiments, samples were consistently selected based on matching i-v characteristics, ensuring identical initial conditions. table 2 components used for the irradiation induced nbti (first part) experiment irradiation parameters 90 gy 30 gy 120 gy p o la ri za ti o n 0 v sd46, s4 s15 s12 s1 -10 v sd60, s8 sd64, sd66, s19 s10 s9 nbt stress parameters pulsed: f = 10 khz dtc = 50 % static t = 175 ◦c vg = -45 v successive irradiation and bias temperature stress induced effects on commercial p-channel... 569 table 3 applied signal properties and parameter values during nbt stress f t = 175 ◦c vg = -45 v dtc = 50 % 10 khz s16, s42, s43, s45, s46, s58, s59, s60 1 khz s47, s48, s49 s50, s51 p re v io u sl y st at ic n b t : t = 1 7 5 c v g = 4 5 v 1 khz (f1=10 khz) s11, s14, s21, s61, s52, s53 s54, s55, s65 3. results and discussion fig. 7 (a) illustrates the changes in threshold voltage for components irradiated up to 30 gy, 90 gy, and 120 gy. for all absorbed doses, during irradiation, voltages of +10 v and -10 v were applied to the components, while a subset of components was irradiated without any applied bias. a noticeable increase in the absolute value of the threshold voltage is observed across all cases. it is evident that the threshold voltage shift is more pronounced in components irradiated with the applied bias. additionally, this increase is slightly more significant in those components that were irradiated under the positive bias. additionally, fig. 7(b) shows the threshold voltage variations during the static nbt stress. throughout this process, all components were subjected to a gate bias of -45 v, while the temperature was elevated to 175°c. a significant decrease in the absolute value of the threshold voltage is observed in components previously irradiated up to doses of 90 gy and 120 gy under polarization. this decrease is more evident for devices formerly irradiated up to higher dose (120 gy). for other components, which were irradiated without polarization as well as those irradiated up to 30 gy with polarization, an increase is observed. this increase is most pronounced in components irradiated up to 30 gy without polarization. it can be seen that changes of the threshold voltage are significant in the initial phase of static nbt stress, while in the later phase, the changes are significantly reduced. the explanation for such threshold voltage behavior would be that in devices irradiated without polarization, fewer defects are formed. so, the subsequent stress, which was applied, additionally created more defects, and this is the reason why there is an increase in the absolute value of the threshold voltage shift. for components irradiated under polarization, but only up to 30 gy, they also have an increase in threshold voltage shift during nbt, due to the smaller number of defects. in fact, they have a similar threshold voltage shift behavior during static nbt stress like components irradiated without any polarization. the subthreshold midgap technique was utilized for the quantitative determination of the specific contributions of oxide trapped charge and interface traps to the change in threshold voltage. these contributions, vot and vit are shown in fig. 8 and fig. 9, respectively. the first part of figures (fig. 8a and fig. 9a) shows changes of vot and vit during the irradiation, while the second part of figures (fig. 8b and fig. 9b) shows these changes during the static nbt stress. the applied nbt stress was performed at t = 175 oc and vg = 45 v. in all stressed devices, the contributions of the gate oxide charge to the threshold voltage shift were observed to be larger than that of the interface traps [12]. 570 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković (a) (b) fig. 7 threshold voltage shift during: (a) irradiation (with and without gate bias) and (b) static nbt stress the underlying changes in the density of positive charge in the gate oxide and interface states are attributable to electrochemical reactions occurring during nbt stressing [21, 33]. initially, positive charge accumulation in the oxide is observed due to the trapping of holes at defects within the oxide, such as oxygen vacancies, equation 1. 3 3 3 3o si si o h o si si o•• + + •  + →   (1) also, due to the strong electric field, the dissociation of the weakest si-h bonds occurs at the interface. it is represented by the electrochemical equation 2. 3 3si si h si si h• • −   + (2) (a) (b) fig. 8 threshold voltage shift contributions of gate oxide charge during: (a) irradiation (without and with gate bias) and (b) static nbt stress successive irradiation and bias temperature stress induced effects on commercial p-channel... 571 these electrochemical reactions are part of a chain of electrochemical processes occurring in the oxide of components and at the interface. the reactions involving hydrogen particles significantly influence the electrochemical processes. highly reactive hydrogen atoms interact, neutral h2 molecules diffuse, and positive h+ ions drift, interacting with defects and weakened bonds. consequently, practically all electrochemical reactions leading to the formation of charge in the oxide and interface traps are defined by the total amount of hydrogen particles present at and near the silicon dioxide-silicon (sio2-si) interface. additionally, the overall number of defects in the oxide and at the interface determines the processes of forming trapped positive charge in the gate oxide and interface traps. this results in changes of the threshold voltage, which is one of the most critical parameters of commercial vdmos power transistors. the threshold voltage shift contributions of gate oxide charge and interface traps during irradiation and pulsed nbt stress are shown in fig. 10. in unstressed devices, pulsed voltage stressing typically results in smaller shifts compared to static stressing under identical temperature and gate voltage conditions, attributable to the partial recovery during the pulsed stressing. the pulsed stressing comprises alternating "ontime" and "off-time" phases. during the on-time phase, the applied voltage generates defects within the oxide and at the interface. in the subsequent off-time phase, a portion of these defects undergoes recovery, while the remainder leads to a permanent degradation. it should be noted that, opposite to the static nbt, during the pulsed nbt, notable decrease of δvot was observed only for devices irradiated up to 90 gy with the negative gate polarization. this decrease in δvot was observed due to pronounced recovery processes. also, there were no significant changes of both δvot and δvit indicated in devices previously irradiated to a lower dose (30 gy) and those without the polarization at both 30 gy and 90 gy. this indicates that in irradiated devices subjected to pulsed nbt stress (at the same temperature and gate voltage), recovery processes are more pronounced. (a) (b) fig. 9 threshold voltage shift contributions of interface traps during: (a) irradiation (without and with gate bias) and (b) static nbt stress 572 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković (a) (b) fig. 10 contributions of gate oxide charge and interface traps to the threshold voltage shift observed through applied: (a) irradiation performed without and with gate polarization; and (b) pulsed nbt stress these variations in δvot and δvit contribute to alterations in the threshold voltage shift, as depicted in fig. 11, which illustrates the threshold voltage changes during the static and pulsed nbt stress with -45 v and -50 v polarizations. fig. 11 changes of threshold voltage observed through applied static and pulsed nbt stress performed with 45 v and with 50 v, for fresh and formerly irradiated components the magnitude of threshold voltage change is compared between unstressed components and those previously irradiated up to 30 gy, with (+10 v and -10 v) and without the polarization. notably, the static stress induces more significant threshold voltage shifts for successive irradiation and bias temperature stress induced effects on commercial p-channel... 573 both polarizations and in all devices. fig. 11 also highlights that the irradiation with a positive polarization results in a larger δvt compared to a negative polarization. this disparity persists even after the spontaneous recovery. during the nbt stress, a reduction in the threshold voltage change is observed, particularly pronounced in components previously irradiated under the negative polarization. this distinction is evident from the changes observed in components subjected to nbt stress at -45 v. in order to better examine the changes which, occur in these devices, further analyses were obtained. in fig. 12 changes of threshold voltage shift induced by the pulsed nbt stress in fresh and previously irradiated devices are presented. fig. 12 shift of the threshold voltage induced by pulsed nbt stress applied to fresh and to previously irradiated devices it is evident that the changes occurring when components are stressed with the pulsed nbt, where they were previously irradiated with a polarization of ±10 v, are less pronounced in components stressed at 10 khz compared to those stressed at a combination of 1 hz and 10 khz. fig. 13 and fig. 14 illustrate the corresponding contributions to the threshold voltage shift from gate oxide charge and interface traps induced by pulsed nbt stress (under conditions: t = 175°c and vg = -50 v) in both fresh and previously irradiated devices. also, it can be seen that the fresh devices had the most prominent response to nbt stress whether static or pulsed. this is evident for the threshold voltage shift and for the contribution of the oxide trapped charge. although these changes (for fresh devices) are larger, the values of δvot remain lower than the values for previously irradiated devices. as for devices exposed to different stress signals, it was established that in devices subjected to mixed stress signals, δvot is somewhat reduced. this can indicate that some recovery processes are more pronounced. as for the values of δvit , it can be noticed that they are lower in devices exposed to mixed stressing signals. 574 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković fig. 13 contribution of gate oxide charge to shift of the threshold voltage induced by pulsed nbt stress applied to fresh and to pre-irradiated devices fig. 14 contribution of interface traps to shift of the threshold voltage induced by pulsed nbt stress applied to fresh and to pre-irradiated devices 4. self-heating in normal operating conditions as mentioned, vdmos devices are extensively utilized in applications such as switching power supplies, automotive electronics, and the aerospace sector [44]. these devices typically operate at switching frequencies within the mhz range, making them suitable for a variety of successive irradiation and bias temperature stress induced effects on commercial p-channel... 575 circuit applications. the characteristics of the control signal, including parameters such as the duty cycle, rise time, and fall time, manage the transistor's on-time and off-time intervals. when the control signal voltage exceeds the threshold voltage, vt, the vdmosfet operates as a closed switch; otherwise, it remains in an open switch state. however, the threshold voltage of the vdmosfet is subject to a variation due to self-heating effects during the operation [45, 46]. in light of these considerations, the aim of this experimental segment was to evaluate the impact of the previous irradiation on the actual operating conditions of the devices. the experimental setup used for conducting this part of the experiment was shown in fig. 15. the examined samples were fresh and previously irradiated, up to 60 gy with the gate polarization of 10 v. all component groups were subjected to pulsed signals with parameters that matched the signals found in switching power supplies during the simulation of actual operating conditions. the signal applied to the tested sample was generated using an agilent 33921a signal generator (1), configured to parameters of 1 hz frequency, 100 ms rise and fall times, and a 50 % duty cycle. additionally, a rigol dl3021 active load (2) was integrated into the drain circuit. alongside these instruments, a power supply (3) and a rigol ds1202 oscilloscope (4) were employed to ensure that the component under the test received the correct signal. the temperature changes during the operation and cooling of both fresh and previously irradiated components were measured using a flir e8 infrared camera (5) and corresponding software (6). fig. 15 schematic representation of equipment used in this part of the experiment fig. 16 presents the absolute temperature variations over time under real operating conditions. this figure illustrates the results for p-channel power vdmos transistors, comparing those with an irradiation history to fresh, unstressed samples. in addition to analyzing the heating in greater detail, the subsequent cooling was also measured. these components exhibit the most considerable temperature changes because they were subjected to a current of 1.5 a, requiring the longest cooldown period among all devices tested, which is why these specific results are highlighted here. the graph in fig. 16 reveals a temperature profile that does not exhibit consistent changes over time. the increase in the chip's temperature is primarily attributed to the effects arising from the power dissipation. each pulse transition introduces additional stress to the device. temperature rises during the duration of each pulse edge and decreases toward the thermal equilibrium during the off state. the temperature incrementally rises with an increased number of pulses. furthermore, samples that had previously undergone stress 576 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković exhibited changes in the threshold voltage, with an increase in the absolute threshold voltage value. this elevation prolongs the duration of channel opening at the same gate voltage, resulting in current flowing through a higher resistance in stressed devices for extended periods, thus leading to the increased power dissipation. fig. 16 changes of absolute temperature value in pmos devices with fresh and previously irradiated devices 5. conclusion the study required to elucidate the effects of the negative bias temperature (nbt) stress on irradiated commercial p-channel power vdmos transistors by investigating contributions of changes in the gate oxide charge, δvot, and interface trapped charge, δvit, and their impact on threshold voltage variations. investigating the source of the change in the threshold voltage is crucial for ensuring the reliable operation of the components. for this reason, the mechanisms that are responsible for the formation of charges in the gate oxide charge and interface traps, and which thereby lead to a change in vt, were additionally considered. the findings reveal that in devices previously irradiated with a lower dose of 30 gy without polarization, static nbt stress resulted in increased values for both δvot and δvit. particularly significant alterations in gate oxide charge and interface traps were detected in non-irradiated (fresh) devices during the pulsed nbt stress. nevertheless, irradiated devices (30 gy) exhibited higher δvot values, correlating with more pronounced shifts in threshold voltage. for devices subjected to varied stressing signals, it was observed that those exposed to mixed signals experienced a slight decrease in δvot, suggesting the occurrence of certain recovery mechanisms. moreover, the δvit values were reduced in devices under mixed stressing conditions. these findings are consistent with previous research and provide additional insight into the electrochemical mechanisms occurring in the gate oxide. however, due to the need to better understand the mechanisms that cause these parameters to change, additional successive irradiation and bias temperature stress induced effects on commercial p-channel... 577 comprehensive research will be conducted. also, a part of the research was dedicated to self-heating of the devices. research indicated that devices previously subjected to stress are more prone to the self-heating compared to fresh samples. earlier processing of devices has led to the parameter degradation, evidenced by changes in threshold voltage. variations in the threshold voltage impact the channel formation, causing delays in channel opening. this delay permits the current to flow through an increased resistance, resulting in the higher power dissipation and subsequent self-heating. in the future, the components will be examined concurrently for their response to nbt as well as additional stresses like magnetic fields and radiation. additionally, there are plans to conduct examinations in real-time operations. afterwards, the aim is to conduct a thorough analysis and comparison of how these factors impact the self-heating process. acknowledgement: presented investigation was done in the frame of grant no. 451-03-65/202403/200102 which is supported by the ministry of science, technological development and innovations of the republic of serbia. also, some parts of the results were obtained in the frame of project sps g5974 "high-k dielectric radfet for detection of rn treats". references [1] s. veljković, n. mitrović s. djorić-veljković, v. davidović, i. manić, e. živanović, s. stanković, m. andjelković, g. ristić, a. paskaleva, d. spassov, d. danković, "effects in commercial p-channel power vdmos transistors initiated by negative bias temperature stress and irradiation", in proceedings of the ieee 33rd international conference on microelectronics (miel 2023), niš, serbia, 16-18 october 2023, pp. 277–280. [2] t. grasser, b. kaczer, w. goes, h. reisinger, t. aichinger, p. hehenberger, p.-j. wagner, f. schanovsky, j. franco, m. toledano luque, and m. nelhiebel, "the paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps", ieee trans. electron devices, vol. 58, no. 11, pp. 3652–3666, 2011. [3] g.s. ristic, s.d. ilic, r. duane, m.s. andjelkovic, a.j. palma, a.m. lallena, m.d. krstic, s.j. stankovic, a.b. jaksic, "radiation sensitive mosfets irradiated with various positive gate biases", j. radiat. res. appl. sci., vol. 14, no 1, pp. 353–357, 2021. [4] d. danković, n. mitrović, s. veljković, v. davidović, s. djorić-veljković, z. prijić, a. paskaleva, d. spassov, s. golubović, "a review of the electric circuits for nbti modeling in p-channel power vdmosfets", in proceedings of the 32nd international conference on microelectronics (miel 2021), online, serbia, 12-14 september 2021, pp. 55–62. [5] w. h. zhang, m.-g. zhu, k.-h. yu, c.-z. li, j. wang, l. xiang, and y.-w. wang, "impact of low-dose radiation on nitrided lateral 4h-sic mosfets and the related mechanisms", chin. phys. b, vol. 32, no 5, pp. 057305, 2023. [6] z. qin, j. yang, and x. li, "displacement damage on p-channel vdmos caused by different energy protons", nucl. instrum. methods phys. res., vol. 461, pp. 232–236, 2019. [7] j. lutz, u. scheuermann, h. schlangenotto, and r. de doncker, power semiconductor devices. neuisenburg: germany, springer, 2018. [8] a. bhattacharjee, a. nag, k. das, and s. n. pradhan, "design of power gated sram cell for reducing the nbti effect and leakage power dissipation during the hold operation", j. electron. test.: theory appl., vol. 38, pp. 91–105, 2022. [9] irf9520, data sheet, international rectifier. [10] d. danković, i. manić, v. davidović, s. djorić-veljković, s. golubović, and n. stojadinović, "negative bias temperature instability in n-channel power vdmosfets", microelectron. reliab., vol. 48, no. 8–9, pp. 1313–1317, 2008. [11] n. mitrović, s. veljković, v. davidović, s. djorić-veljković, s. golubović, e. živanović, z. prijić, and d. danković, "impact of negative bias temperature instability on p-channel power vdmosfet used in practical applications", microelectron. reliab., vol. 138, no. 9, p. 114634 (1–6), 2022. 578 s. veljković, n. mitrović, v. davidović, e. živanović, g. ristić, d. danković [12] s. veljković, n. mitrović, v. davidović, s. golubović, s. djorić-veljković, a. paskaleva, d. spassov, s. stanković, m. andjelković, z. prijić, i. manić, a. prijić, g. ristić, and d. danković, "response of commercial p-channel power vdmos transistors to ionizing irradiation and bias temperature stress", j. circuits syst. comput., vol. 31, no 18, p. 2240003, 2022. [13] g. zeng, x. liu, g. yang, l. li, x. chen, y. jian, s. zhu, y. pang, "investigation on γ radiation effects of n-channel vdmosfets irradiated without electric field stress", microelectron. reliab., vol. 116, p. 114019, 2021. [14] y. sun, t. wang, z. liu, and j. xu, "investigation of irradiation effects and model parameter extraction for vdmos field effect transistor exposed to gamma rays", radiat. phys. chem., vol. 185, p. 109478, 2021. [15] d. tripathy, d. p. acharya, p. k. rout, and s. m. biswal, "influence of oxide thickness variation on analog and rf performances of soi finfet", fu elec. energ., vol. 35, no. 1, pp. 1–11, 2022. [16] x. li, j. cui, q. zheng, p. li, x. cui, y. li, and q. guo, "study of the within-batch tid response variability on silicon-based vdmos devices", electronics, vol. 12, no. 6, p. 1403, 2023. [17] a. lazzaz, k. bousbahi, and m. ghamnia, "performance analysis and optimization of 10 nm tg nand p-channel soi finfets for circuit applications", fu elec. energ., vol. 35, no 4, pp. 619–634, 2022. [18] f. liu, c. zhu, z. liu, j. yang, y. wei, y. zhang, and x. li, "effect of hydrogen molecule release on nbti by low-temperature pre-treatment in p-channel power vdmos transistors", ieee trans. device mater. reliab., vol. 40, no. 2, pp. 211–218, 2024. [19] z.c. wang, c. chen, h.d. wang, c.y. wang, z.f. wang, and x.r. ye, "a modelling method of the onstate resistance of p-channel power mosfets under nbti stress", microelectron. reliab., vol. 150, pp. 115–157, 2023. [20] f. irrera and g. broccoli, "a comprehensive study of negative bias temperature instability in mos structures", microelectron. reliab., vol. 155, pp. 115–371, 2024. [21] t. liu, y. wang, r. ma, h. wu, j. tao, y. yu, z. cheng, and s. hu, "simulation studies on singleevent effects and the mechanisms of sic vdmos from a structural perspective", micromachines, vol. 14, p. 1074 (1–22), 2023. [22] x. ye, k. zhang, c. chen, z. li, y. wang, and g. zhai, "the threshold voltage degradation model of n channel vdmosfets under pbt stress", microelectron. reliab., vol. 91, pp. 46–51, 2018. [23] v. volosov, s. bevilacqua, l. anoldo, g. tosto, e. fontana, a.-l. russo, c. fiegna, e.sangiorgi, and a.n tallarico, "positive bias temperature instability in sic-based power mosfets", micromachines, vol. 15, p. 872 (1–9), 2024. [24] y. wang, y. li, y. yang, and w. chen, "hot carrier injection reliability in nanoscale field effect transistors: modeling and simulation methods", electronics, vol. 11, no. 21, p. 3601 (1–16), 2022. [25] o. aviñó-salvadó, cyril buttay, f. bonet, c. raynaud, p. bevilacqua, j. rebollo, h. morel, and x. perpiñà, "physics-based strategies for fast tddb testing and lifetime estimation in sic power mosfets", ieee trans. ind. electron., vol. 71, no. 5, pp. 5285–5295, 2023. [26] y. yang, h. liu, k. yang, z. gao, and z. liu, "investigation of negative bias temperature instability effect in nano pdsoi pmosfet", micromachines, vol. 13, p. 808, 2022. [27] y. xue, m. yuan, y. li, d. wang, m. wu, p. ren, l. zhang, r. wang, z. ji, and r. huang, "investigation of positive bias temperature instability in advanced finfet nodes", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 14-18 april 2024, pp. 1–5. [28] y. zhao, p. rinaudo, a. chasin, b. truijen, b. kaczer, n. rassoul, h. dekkers, a. belmonte, i. de wolf, g. kar, and j. franco, "fundamental understanding of nbti degradation mechanism in igzo channel devices", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 14-18 april 2024, pp. 4a.1–7 [29] p. rinaudo, a. chasin, y. zhao, b. kaczer, n. rassoul, h.f.w. dekkers, m.j. van setten, a. belmonte, i. de wolf, g. kar, and j. franco, "light-assisted investigation of the role of oxygen flow during igzo deposition on deep subgap states and their evolution under pbti", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 14-18 april 2024, p. 5a.3 (1–6). [30] y. guo, r. degraeve, m. vandemaele, p. saraza-canflanca, j. franco, b. kaczer, e. bury, and i. verbauwhede, "exploiting bias temperature instability for reservoir computing in edge artificial intelligence applications", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 14-18 april 2024, p. 6c.2 (1–7). [31] a. k. biswas, d. j. lichtenwalner, j. park, b. hull, s. ganguly, d. a. gajewski, and e. balkas, "holeinduced threshold voltage instability under high positive and negative gate stress in sic mosfets", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 1418 april 2024, p. p55.sic (1–6). successive irradiation and bias temperature stress induced effects on commercial p-channel... 579 [32] p. steinmann, d. j. lichtenwalner, s. stein, j.-h. park, s. das, and s.-h. ryu, "measurement of the dit changes under bti-stress in 4h-sic fets using the subthreshold slope method", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 14-18 april 2024, p. p58.sic (1–4). [33] k. thakor, p. chatterjee, and s. mahapatra, "a tcad to spice framework for isolation of bti and hcd in gaa-sns fets and to estimate impact on ro under normal and overclocking conditions", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 1418 april 2024, p. p63.tx (1–6). [34] s. bonaldo, c. martinella, s. race, n. für, s. mattiazzo, m. bagatin, s. gerardin, a. paccagnella, and u. grossner, "radiation-induced effects in sic vertical power mosfets irradiated at ultrahigh doses", ieee trans. nucl. sci., vol. 71, no. 4, pp. 418–426, 2024. [35] d. wang, y. xue, y. liu, p. ren, z. sun, z. wang, y. liu, z. cheng, h. yang, x. liu, b. wu, k. cao, r. wang, z. ji, and r. huang, "sub-20-nm dram technology under negative bias temperature instability (nbti): from characterization to physical origin identification", in proceedings of the ieee international reliability physics symposium (irps), grapevine, tx, usa, 14-18 april 2024, p. 9b.2 (1–7). [36] l. contamin, m. cassé, x. garros, f. gaillard, m. vinet, p. galy, a. juge, e. vincent, s. de franceschi, and t. meunier, "fast measurement of bti on 28nm fully depleted silicon-on-insulator mosfets at cryogenic temperature down to 4k", in proceedings of the ieee international reliability physics symposium (irps), 27-31 march 2022, p. 7a.3 (1–6). [37] a. ghosh, o. awadelkarim, j. hao, s. suliman, and x. wang, "comparison of ac and dc bti in sic power mosfets", in proceedings of the ieee international reliability physics symposium (irps), 2731 march 2022, p. 7a.2 (1–6). [38] k. singh and s. kalra, "reliability forecasting and accelerated lifetime testing in advanced cmos technologies", microelectron. reliab., vol. 151, p. 115261 (1–15), 2023. [39] m. zheng, w. chen, y. lyu, h. chen, j. chen, and l. cai, "time-dependent statistical nbti model for aging assessment in circuit level implemented with open model interface", microelectron. reliab., vol. 151, p. 115254 (1–7), 2023. [40] x. li, y. shao, y. wang, f. liu, f. kuang, y. zhuang, and c. li, "interaction of negative bias instability and self-heating effect on threshold voltage and sram (static random-access memory) stability of nanosheet field-effect transistors", micromachines, vol. 15, p. 420 (1–13), 2024. [41] y. liu, y. ma, and c. pan, "an investigation into the thermal surface contact resistance, fin width and temperature on negative bias temperature instability during self-heating", microelectron. reliab., vol. 157, p. 115414 (1–6), 2024. [42] h. tahi, b. djezzar, and h. timlelt, "capacitance-voltage technique based on time varying magnetic field for vdmosfet--part i: concept and implementation", ieee trans. electron devices, vol. 68, no. 5, pp. 2173–2180, 2021. [43] h. tahi, b. djezzar, and h. timlelt, "capacitance-voltage technique based on time varying magnetic field for vdmosfet--part ii: measurements and parameter extractions", ieee trans. electron devices, vol. 68, no. 5, pp. 2181–2188, 2021. [44] a. bhattacharje, a. das, d. k. sahu, s. n. pradhan, and k. das, "a meta-heuristic search-based input vector control approach to co-optimize nbti effect, pbti effect, and leakage power simultaneously", microelectron. reliab., vol. 144, p. 114979, 2023. [45] h. chen, y. zhang, p. he, y. zhang, s. chen, s. li, m. luo, z. li, s. bai, and b. zhang, "integrated lateral sbd temperature sensor of a 4h-sic vdmos for real-time temperature monitoring", ieee trans. electron devices, vol. 70, no. 7, p. 3813–3819, 2023. [46] e. živanović, s. veljković, n. mitrović, i. jovanović, s. djorić-veljković, a. paskaleva, d. spassov, and d. danković, "a reliability investigation of vdmos transistors: performance and degradation caused by bias temperature stress", micromachines, vol. 15, p. 503 (1–15), 2024. facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. i-iii © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd guest editorial energetics conference has been held annually since 2015, and it has been organized by research and development center alfatec in cooperation with mathematical institute of the serbian academy of sciences and arts and complex systems research centre cosrec. the conference co-organizers are the following respectable institutions: academy of sciences and arts of the republika srpska, faculty of mining and geology, university of belgrade, and faculty of technical sciences, uklo university st. climent ohridski. the conference is organized under the patronage of the ministry of education, science and technological development of the republic of serbia. the aim of the energetics conference is to provide an opportunity for researchers to exchange and discuss their respectable work in a variety of areas including:  energy management  energy modeling, planning and policies  energy efficiency and conservation  energy pricing policies  new technologies for energy saving  energy and climate change  sustainable energy technologies  renewable energy and alternative fuels  computational methods in energy economics  energy economics the papers appearing in this issue are from the energetics 2018 – 4 th virtual international conference on science, technology and management in energy held in october 25-26. there are six refereed contributed papers in this special issue. preliminary versions were presented at energetics 2018 conference and published in the energetics 2018 – 4 th virtual international conference on science, technology and management in energy proceedings. the papers included here are fully refereed revised and extended versions. circuit breaker replacement strategy based on the substation risk assessment, dragan stevanović, aleksandar janjić develops methodology based on real field data. in this paper, based on 427 circuit breakers’ statistical data, weibull probability distribution of contact resistance for circuit breakers is determined. authors calculate substations reliability and cbs’ removal costs with this methodology. cloud-based scada systems: cyber security considerations and future challenges, mirjana d. stojanović, slavica v. boštjančič rakas, jasna d. marković petrović describes cloud-based scada systems, and focus on cloud service selection as well as on the analysis of benefits and risks of cloud-based scada applications. authors address security threats in cloud environment and present challenges in security provisioning regarding security solutions, risk management and test environment. low cost cup electronic anemometer, elson avallone, paulo césar mioralli, pablo sampaio gomes natividade, paulo henrique palota, josé ferreira da costa describes the cup anemometer, an easy to build and low cost device which is a great choice for small farmers, but also for evaluation of wind turbines, and especially for meteorological stations.. the reed switch sensor is also another advantage as it does not require a sophisticated programming, as well as the open platform arduino. the present sensor was developed as part of the project of a meteorological station to monitor the microclimate of the city of catanduva-sp, brazil. transformative and disruptive role of local direct current power networks in power and transportation sectors, prahaladh paniyil, rajendra singh, amir asif, vishwas powar, guneet bedi, john kimsey discusses the best possible energy solution for smart community. authors focus on decentralized power generation, storage and distribution through photovoltaic and lithium batteries. the paper encompasses the need for local direct current (dc) power and provides an example of local dc power in the surface transport sector. calculation of losses in the distribution grid based on big data, lazar sladojević, aleksandar janjić, marko ćirković provides a new approach for calculation of losses in the electrical distribution. this is done by analyzing the data available from the distribution grid operator. the used data set is available in the serbian distribution grid operator’s report for the year 2017. the influence of nonlinear background on the quality of electricity, enver agić, damir šljivac, bakir agić discusses the power distribution network load and analyze three-phase part of the electrical network where the ygyg transformer connects the nonlinear circuits of a set of personal computers (pcs) through the transformer. the load is balanced at each stage. we are truly grateful to all the authors for their contributions to this special issue. we acknowledge the important contribution of the energetics 2018 program committee members, listed below, for their valuable comments and reviews on the contributed papers. we also express our sincere gratitude to prof. ninoslav d. stojadinovic, editor-inchief, and dr. danijel m. dankovic, technical secretary, facta universitatis: electronics and energetics series, for their support on this special issue. we sincerely hope that publication of these results will stimulate continued research in the field of energy. dr. lazar z. velimirovic mathematical institute sasa kneza mihaila 36 11001 belgrade serbia energetics 2019 program committee chair: prof. dr. aleksandar janjić, faculty of electronic engineering, serbia members: prof. dr. zoran stajić, faculty of electronic engineering, serbia prof. dr. detelin markov, faculty of power engineering and power machines, bulgaria prof. dr. marko serafimov, faculty of mechanical engineering, macedonia prof. dr. mileta janjić, faculty of mechanical engineering, montenegro prof. dr. miomir stanković, faculty of occupational safety, serbia prof. dr. enver agić, public enterprise electric utility of bosnia and herzegovina, bosnia and herzegovina prof. dr. niko majdandžić, faculty of mechanical engineering, croatia prof. dr. serkan abbasoglu, cyprus international university, turkey dr. lazar velimirović, mathematical institute of the serbian academy of sciences and arts, serbia prof. dr. bojan srđević, faculty of agriculture, serbia prof. dr. abdelhak djoudi, national polytechnic school, algeria prof. dr. suzana savić, faculty of occupational safety, serbia prof. dr. zdravko milovanović, faculty of mechanical engineering, bosnia and herzegovina prof. dr. miloš jelić, research and development center alfatec, serbia prof. dr. zoran markov, faculty of mechanical engineering, macedonia prof. dr. krsto miljanović, agromediterranean faculty, bosnia and herzegovina prof. dr. krum todorov, faculty of power engineering and power machines, bulgaria prof. dr. zoran jovanović, faculty of electronic engineering, serbia prof. dr. dragoljub mirjanić, academy of sciences and arts of republic of srpska, bosnia and herzegovina prof. dr. zoran gligorić, faculty of mining and geology, serbia prof. dr. ljubiša papić, faculty faculty of technical sciences cacak, serbia prof. dr. goran janaćković, faculty of occupational safety, serbia dr. wassila issaadi, faculty of technology, university of bejaia, algeria prof. dr. roddy lollchund, university of mauritius, republic of mauritius 13681 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 197 217 https://doi.org/10.2298/fuee2601197m © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper comparative analysis of deep learning and traditional optimization algorithms for adaptive beamforming in mimo systems mahmoud mohamed, fayez aljuaid, mhd walid koubeisi electrical and computer engineering, king abdul aziz university, saudi arabia orcid ids: mahmoud mohamed https://orcid.org/0009-0003-5213-4019 fayez aljuaid https://orcid.org/0009-0008-3889-8983 mhd walid koubeisi https://orcid.org/0009-0002-9406-4840 abstract. this study provides a comprehensive methodological contribution through rigorous comparative analysis between deep learning approaches and traditional optimization algorithms for adaptive beamforming in mimo systems. traditional optimization methods face significant challenges in dynamic environments due to computational complexity and convergence issues. through systematic experimentation with standardized datasets (deepmimo, 3gpp tr 38.901, and ieee mimo data challenge), we evaluate performance using statistically validated metrics including signal-to-interference-plus-noise ratio, bit error rate, computational efficiency, and adaptation speed. our findings reveal that deep learning approaches achieve significantly faster convergence (23.7%, p < 0.01) and higher sinr (18.5%, p < 0.01) in dynamic channel conditions, while traditional algorithms maintain superior performance in steady-state scenarios. traditional methods outperform deep learning by 12.3% (p < 0.01) in terms of ber in low-snr environments. computational complexity analysis shows traditional methods scale as o(n³) with mimo size n, while deep learning maintains o(n) inference complexity. the main contribution of this work is a novel adaptive selection framework with mathematically proven optimality bounds that dynamically switches between methodologies based on current channel conditions, achieving 15.3% higher average sinr (p < 0.01) in mixed scenarios compared to fixed algorithms. key words: adaptive beamforming, mimo systems, deep learning, optimization algorithms, computational complexity, wireless communications 1. introduction the rapid growth in wireless communication demands has pushed multiple-input multiple-output (mimo) systems to the forefront of modern communication infrastructure [1, 2]. within mimo systems, adaptive beamforming has emerged as a critical technology for received may 13, 2025; revised june 23, 2025, and august 08, 2025; accepted august 09, 2025 corresponding author: mahmoud mohamed electrical and computer engineering, king abdul aziz university, saudi arabia e-mail: mhassan0085@stu.kau.edu.sa mailto:mhassan0085@stu.kau.edu.sa 198 m. mohamed, f. aljuaid, mhd w. koubeisi enhancing spectral efficiency, signal quality, and network capacity through intelligent spatial filtering [3]. this technique strategically optimizes transmission and reception patterns to maximize signal power toward desired users while minimizing interference toward others [4]. traditional optimization algorithms for adaptive beamforming, including least mean squares (lms), recursive least squares (rls), and minimum variance distortionless response (mvdr), have been extensively studied and implemented in various systems [5, 6]. these algorithms typically depend on statistical properties of signals and mathematical optimization frameworks to iteratively adjust beamforming weights. while they have proven effective in many controlled environments, these traditional approaches face growing challenges in modern communication scenarios characterized by high mobility, dense networks, and non-stationary channel conditions [7]. more recently, deep learning approaches have gained traction as promising alternatives for complex signal processing tasks in wireless communications [8, 9]. by leveraging neural networks' ability to model complex nonlinear relationships and adapt to changing environments, deep learning-based beamforming methods potentially offer solutions to scenarios where traditional methods struggle [10]. however, there remains a gap in understanding exactly how these fundamentally different approaches compare across diverse operating conditions. 1.1. problem statement despite the theoretical advantages of both traditional optimization algorithms and deep learning approaches, there is still limited understanding of their comparative performance across the diverse operating conditions relevant to modern mimo systems. this knowledge gap makes it difficult for engineers and researchers to make informed decisions when designing adaptive beamforming systems for next-generation wireless networks. specifically, several critical questions remain inadequately addressed: 1. how do deep learning approaches truly compare to traditional optimization algorithms in terms of beamforming accuracy, computational efficiency, and adaptability across varying channel conditions? 2. under what specific operating conditions does each approach demonstrate superior performance? 3. is it possible to develop hybrid approaches that leverage the complementary strengths of both methodologies? research gap. current literature has explored various optimization techniques [11, 12] and neural network architectures [13, 14] for beamforming, but most studies focus on either traditional methods or deep learning approaches in isolation. the handful of comparative studies available [15] typically restrict their analysis to specific network conditions or limited performance metrics, failing to provide a comprehensive evaluation framework. just as problematic, existing research often overlooks practical implementation aspects like computational complexity, training overhead, and robustness to model mismatch–factors that prove crucial for real-world deployment [16, 17]. 1.2. objectives our study aims to conduct a thorough, systematic comparison between deep learning approaches and traditional optimization algorithms for adaptive beamforming in mimo systems. we have structured our research around the following specific objectives: deep learning and traditional algorithms for mimo beamforming 199 1. to develop a unified evaluation framework encompassing multiple performance metrics relevant to practical mimo systems. 2. to analyze the performance of both approaches across diverse channel conditions, network topologies, and user mobility scenarios. 3. to characterize the computational complexity and resource requirements of both methods. 4. to identify specific scenarios where each approach demonstrates superior performance. 5. to explore potential hybrid approaches that leverage the complementary strengths of both methodologies. key contributions. the key contributions of this paper include a mathematically rigorous comparative analysis framework with formal performance bounds that evaluates traditional optimization algorithms and deep learning approaches for adaptive beamforming across multiple metrics and operating conditions. we utilize standardized benchmark datasets for comparing beamforming algorithms, including channel models derived from field measurements in diverse environments with statistically validated characteristics. the paper presents novel theoretical insights into the fundamental limitations of both approaches, including proven convergence properties and error bounds for different channel conditions. we introduce a new algorithmic framework for hybrid beamforming selection with provable optimality guarantees and complexity analysis. finally, we provide hardware-validated implementation and performance measurements on commercial sdr platforms (usrp x310) that confirm simulation results. paper organization. the remainder of this paper is organized as follows: section 2 provides a comprehensive review of related work on both traditional and deep learningbased adaptive beamforming techniques. section 3 details our evaluation methodology, including algorithm implementations, dataset descriptions, and performance metrics. in section 4, we present and analyze the comparative results across various operating conditions. section 5 discusses the implications of our findings and proposes a hybrid approach. finally, section 6 concludes the paper and outlines directions for future research. 2. related work adaptive beamforming techniques have been extensively studied in the mimo systems context. this section provides a comprehensive review of traditional optimization algorithms and deep learning approaches, highlighting their respective strengths and limitations. 2.1. traditional optimization algorithms for adaptive beamforming traditional optimization-based approaches for adaptive beamforming can be broadly categorized into statistical and deterministic methods. 2.1.1. statistical optimization methods statistical methods leverage the statistical properties of received signals to optimize beamforming weights. liu et al. [18] presented a comprehensive analysis of minimum mean square error (mmse) beamforming, demonstrating its effectiveness in scenarios with accurate channel state information (csi). their work achieved a 15% improvement 200 m. mohamed, f. aljuaid, mhd w. koubeisi in sinr compared to non-adaptive techniques, though they noted significant performance degradation in rapidly changing channel conditions. the least mean squares (lms) algorithm and its variants have been widely applied due to their simplicity and robustness. zhang et al. [19] proposed an improved normalized lms algorithm that achieved faster convergence in mobile scenarios while maintaining low computational complexity. their approach demonstrated a 22% reduction in convergence time compared to standard lms, though it still required significant adaptation time in highly dynamic environments. recursive least squares (rls) algorithms offer faster convergence at the cost of increased computational complexity. wang et al. [20] developed a low-complexity variant of rls specifically tailored for massive mimo systems. their method achieved near-optimal performance with approximately 40% reduction in computational requirements compared to conventional rls, though the algorithm still faced challenges in scenarios with limited training data. 2.1.2. deterministic optimization methods deterministic methods formulate beamforming as constrained optimization problems with specific objectives. minimum variance distortionless response (mvdr) and linearly constrained minimum variance (lcmv) are prominent examples in this category. xia et al. [21] proposed a robust mvdr beamforming technique that addressed csi uncertainties through convex optimization. their approach demonstrated 30% improvement in interference rejection compared to conventional mvdr, particularly in low-snr regimes. convex optimization techniques have gained significant attention due to their theoretical guarantees. wu et al. [22] formulated the beamforming problem as a secondorder cone program (socp) and developed an efficient solution method. their approach achieved near-optimal performance with polynomial-time complexity, though its realtime implementation remained challenging for large-scale mimo systems. semidefinite relaxation (sdr) approaches convert non-convex beamforming problems into tractable convex forms. guo et al. [23] applied sdr to multiuser beamforming and demonstrated that the approach achieves performance within 5% of the global optimum. however, they noted that the computational complexity scales poorly with the number of users and antennas. 2.2. deep learning approaches for adaptive beamforming recent years have witnessed growing interest in applying deep learning techniques to adaptive beamforming problems, leveraging neural networks' ability to model complex non-linear relationships. 2.2.1. supervised learning approaches supervised learning approaches utilize labeled training data to learn the mapping between channel conditions and optimal beamforming weights. elbir and mishra [24] proposed a deep neural network (dnn) architecture that directly predicted beamforming vectors from channel matrices. their approach achieved performance comparable to mmse beamforming with 85% reduction in computational complexity during inference, though it required extensive offline training. deep learning and traditional algorithms for mimo beamforming 201 convolutional neural networks (cnns) have been applied to exploit the spatial structure in channel matrices. jin et al. [25] developed a cnn-based beamforming predictor that achieved 18% higher spectral efficiency compared to conventional algorithms in scenarios with partial csi. their method demonstrated particular strength in environments with spatial correlation, though performance degraded in completely random channels. recurrent neural networks (rnns) leverage temporal correlations in channel evolution. liu et al. [26] implemented a long short-term memory (lstm) network for predictive beamforming in mobile scenarios. their approach demonstrated 25% lower bit error rate compared to traditional methods in high-mobility environments by anticipating channel variations. 2.2.2. unsupervised and reinforcement learning approaches unsupervised and reinforcement learning methods reduce or eliminate the need for labeled training data. gao et al. [28] proposed an autoencoder-based approach that learned efficient beamforming representations without explicit channel models. their method demonstrated robust performance across diverse channel conditions but required significant fine-tuning to match the performance of supervised approaches. reinforcement learning (rl) formulates beamforming as a sequential decisionmaking problem. chaudhary et al. [19] developed a deep q-network (dqn) for dynamic beamforming that continuously adapted to changing interference patterns. their approach outperformed traditional algorithms by 12% in terms of average sinr in interferencelimited scenarios, though convergence time remained a challenge. model-based deep learning combines traditional signal processing with neural networks. xia et al. [27] proposed an unfolded iterative algorithm where a neural network learned to optimize each iteration parameters. this approach achieved 35% faster convergence than purely analytical methods while maintaining interpretability. 2.3. hybrid and comparative approaches a limited number of studies have attempted to bridge traditional and learning-based methods. xu and gao [30] proposed a model aided deep learning based mimo ofdm receiver that combined traditional least square channel estimation with deep learning to handle nonlinear power amplifier distortions. their approach demonstrated superior performance in terms of bit error rate and robustness across varying distortion levels, showing the complementary benefits of combining model-based and data-driven techniques. comparative analyses between traditional and learning-based approaches remain scarce. wu et al. [29] conducted a limited comparison between dnn-based and mmse beamforming in simulated environments. their results indicated that deep learning approaches were more robust to channel estimation errors but provided limited insights into computational aspects and adaptation capabilities. for deep learning approaches, theoretical performance analysis has been more challenging. zappone et al. [32] recently developed a framework for analyzing wireless network design in the era of deep learning, comparing model-based and ai-based approaches. they established bounds on the expected error as a function of training dataset size, model complexity, and channel characteristics. the convergence properties of traditional optimization algorithms are well-understood. song et al. [33] applied adaptive filter theory to harmonic current 202 m. mohamed, f. aljuaid, mhd w. koubeisi suppression, demonstrating principles applicable to beamforming. they established that with properly selected parameters, these methods can achieve optimal performance. for deep learning approaches, convergence analysis typically focuses on the training process. rodriguez et al. [34] analyzed deep learning techniques for cybersecurity in mobile networks, presenting insights also relevant to signal processing tasks. they established that with properly selected learning rates, these networks can achieve an εoptimal solution with high probability after sufficient iterations. these theoretical foundations provide essential context for our comparative analysis, enabling us to not only empirically evaluate performance but also understand the fundamental limitations of each approach. 3. methodology this section presents our methodology for comparatively analyzing deep learning and traditional optimization algorithms for adaptive beamforming in mimo systems. we describe the system model, implementation details of evaluated algorithms, dataset preparation, evaluation metrics, and experimental setup. 3.1. system model we consider a mimo communication system with nt transmit antennas and nr receive antennas. the received signal vector 1rn  y is modeled as: = +y hwx n (1) where r tn n h is the channel matrix, t sn n w is the beamforming matrix, 1sn  x is the transmitted signal vector with ns data streams, and 1rn  n is the additive white gaussian noise (awgn) vector with covariance matrix 2i. the objective of adaptive beamforming is to determine the optimal beamforming matrix w that maximizes a specific performance metric, typically the signal-to-interference-plus-noise ratio (sinr), under various constraints. for single-user mimo systems, this can be formulated as: 2 2 max2 | | maxsinr     s.t.    | | | | p=  w hwx w n (2) where pmax is the maximum transmit power constraint. for multi-user mimo systems, additional constraints are introduced to minimize inter-user interference. the optimal beamforming matrix w* that maximizes the sinr can be obtained through eigenvalue decomposition: * max 1p= w v (3) where v1 contains the eigenvectors corresponding to the largest eigenvalues of hhh. for time-varying channels, we model the channel matrix at time t is: 2 1 new1t t −= + −h h h (4) deep learning and traditional algorithms for mimo beamforming 203 where   [0,1] is the temporal correlation coefficient and hnew is an independent channel realization. this model allows us to systematically analyze algorithm performance under different mobility scenarios. 3.2. traditional optimization algorithms we implement and evaluate four representative traditional optimization algorithms for adaptive beamforming: least mean squares (lms): *( )( 1) ( ) ( )n n n ne+ = +w w x (5) where  is the step size, x(n) is the input signal vector, and e(n) is the error between the desired and actual output. the convergence rate of lms is governed by the eigenvalue spread of the correlation matrix [ ( ) ( )]he n n=r x x . specifically, the mean square error converges approximately as:   min22 2( ) | (0) | n e e n e e e −     (6) where min is the minimum eigenvalue of r. this provides a theoretical bound on the convergence speed. recursive least squares (rls): 1 1 ( 1) ( ) ( ) 1 ( ) ( 1) ( )h n n n n n n   − − − = + − p x k x p x (7) ( ) ( ) 1 )( ) (hn d n n n = − −w x (8) *( ) ( 1) ( ) ( )n n n n= − +w w k (9) 1 1( ) ( 1) ( ) ( ) ( 1)hn n n n n − −= − − −p p k x p (10) where  is the forgetting factor, p(n) is the inverse correlation matrix, and d(n) is the desired signal. rls exhibits significantly faster convergence than lms, with a convergence rate that is approximately independent of the eigenvalue spread of the correlation matrix. its computational complexity is 2( )to n per iteration, compared to ( )to n or lms. minimum variance distortionless response (mvdr): 1 1 ( ) ( ) ( ) d mvdr h d d    − − = r a w a r a (11) where r is the interference-plus-noise covariance matrix and a(d) is the array response vector in the desired direction. the mvdr beamformer is optimal in the sense that it minimizes the output power subject to maintaining unity gain in the desired direction. its sinr is bounded by: 204 m. mohamed, f. aljuaid, mhd w. koubeisi 1 2 sinr ( )( )hs mvdr d i d p    − a r a (12) where ps is the signal power and ri is the interference covariance matrix. second-order cone programming (socp): 2 2 min2 2 | | min | |     s.t.     ‍| | d i i d     +w h w w h w (13) where min is the minimum required sinr. this formulation is a convex optimization problem that can be solved using interior-point methods with polynomial time complexity. for an nt  nr mimo system, the computational complexity is approximately 3 3( )t ro n n or a typical interior-point solver. 3.3. deep learning approaches we implement four deep learning architectures, each designed to address specific aspects of the beamforming problem: the architecture can be formally described as: ( )1 1 in 1relu bn( )= +h wh b (14) ( )2 2 1 2relu bn( )= +h w h b (15) ( )3 3 2 3relu bn( )= +h w h b (16) ( )4 4 3 4relu bn( )= +h w h b (17) out 5 4 5= +h w h b (18) where hin is the flattened channel matrix, hout is the predicted beamforming weights, wi and bi are the weights and biases of layer i and bn denotes batch normalization. the convolutional layers use 3  3 filters with stride 1 and ’same’ padding, followed by 2  2 ax-pooling. the mathematical formulation is: ( )1 3 3,64 inmaxpool relu(conv )( )=h h (19) ( )2 3 3,32 1maxpool relu(conv )( )=h h (20) ( )3 3 3,16 2maxpool relu(conv )( )=h h (21) ( )4 4 3 4relu flatten( )= +h w h b (22) out 5 4 5= +h w h b (23) where hin is the input channel matrix and convkk,f denotes a convolutional layer with k  k filters and f feature maps. the lstm cell at time step t and layer l is described by: 1 1( )l l l l l l t f t f t f − −= + +f w h u h b (24) 1 1( )l l l l l l t i t i t i − −= + +i w h u h b (25) deep learning and traditional algorithms for mimo beamforming 205 1 1( )l l l l l l t o t o t o − −= + +o w h u h b (26) 1 1tanh( )l l l l l l t c t c t c − −= + +c w h u h b (27) 1 l l l l l t t t t t−= +c f c i c (28) tanh( )l l l t t t=h o c (29) where l tf l ti and l to are the forget, input, and output gates, l tc is the cell state, l th is the hidden state,  is the sigmoid function, and represents element-wise multiplication. specifically, we unfold the proximal gradient descent algorithm: 1 ( )prox ( )k g k kf + = − w w w (30) where f is the data fidelity term, g is the regularization term,  is the step size, and prox is the proximal operator. in our model-based deep learning approach, we parameterize this as: ( )1 prox ( ; ) kk g k k k kf  + = − w w w (31) where k and k are learnable parameters for the k h iteration/layer. all networks are implemented in tensorflow 2.5 and trained using the adam optimizer with a learning rate of 0.001, batch size of 128, and early stopping with a patience of 10 epochs. to ensure reproducibility, we use fixed random seeds and save model checkpoints at regular intervals. 3.4. hybrid approach we propose a novel hybrid approach that dynamically selects between traditional and deep learning methods based on channel conditions, mobility patterns, and computational constraints. the key innovation in our approach is the formulation of the algorithm selection problem as a multi-armed bandit problem, which allows for online learning of the optimal strategy while balancing exploration and exploitation. formally, let a = {a1, a2,…,ak} be the set of available algorithms, where each algorithm ai can be either a traditional optimization method or a deep learning approach. for a given channel condition and system state st at time t the hybrid approach selects an algorithm at  a to maximize the expected performance metric rt e.g., sinr). we implement the selection mechanism using a contextual bandits framework with thompson sampling. for each algorithm ai we maintain a probabilistic model of its performance conditioned on the context (channel and system state). the selection probability is given by: )( )( | ) ( ,( )t i t i t j tp a a s p r s r s j i= =    (32) where ri(st) is the reward (performance) of algorithm ai in state st. the proposed hybrid algorithm selection approach is detailed in table 1, which outlines the process for dynamically selecting the most appropriate beamforming algorithm based on current channel conditions. 206 m. mohamed, f. aljuaid, mhd w. koubeisi table 1 hybrid algorithm selection algorithm 1 hybrid algorithm selection input: channel state ht, system state st output: selected algorithm at and beamforming matrix wt 1: feature extraction: 2: extract feature vector ft from ht and st 3: compute mobility metric: mt = ||ht −ht−1||f / ||ht−1||f 4: compute channel condition number: t = max(ht) / min(ht) 5: compute interference-to-signal ratio: t = tr(ri) / tr(rs) 6: estimate computational budget bt for current time slot 7: algorithm selection using thompson sampling: 8: for each algorithm ai  a do 9: sample expected reward: ))(),((~~ 2 titii ffnr  10: estimate execution time: τi = executiontimemodel(αi, ft) 11: if i > bt then 12: −=ir ~ // exclude algorithms exceeding budget 13: end if 14: end for 15: execute selected algorithm and update model: 16: select algorithm: iaat ra i ~maxarg = 17: execute algorithm at to obtain beamforming matrix wt 18: observe actual performance rt 19: update probabilistic model parameters for algorithm at: 20: µi(ft) = updatemean(µi(ft), rt, ft) 21: σi 2(ft) = updatevariance(σi 2(ft), rt, ft) 22: return at, wt the selection mechanism uses several key features including mobility metric that quantifies the channel variation rate, favoring deep learning in high-mobility scenarios; channel condition number that indicates ill-conditioning, where traditional methods may struggle; interference level that measures the ratio of interference to signal power; and computational budget that ensures the selected algorithm can execute within time constraints. we prove that under mild conditions on the reward distributions, the regret of this selection mechanism is bounded by ( log )o t t where t is the number of time steps. this means that the performance of our hybrid approach asymptotically approaches that of the optimal algorithm selection strategy. 3.5. datasets we utilize three comprehensive open-source datasets for our evaluation, each designed to capture different aspects of mimo channel conditions: deepmimo: this publicly available dataset [35] provides realistic mimo channel realizations based on ray-tracing. we utilize scenarios ’o1’ (outdoor), ’i1’ (indoor office), and ’i3’ (indoor shopping mall), comprising approximately 50,000 channel realizations. the deep learning and traditional algorithms for mimo beamforming 207 dataset includes mimo configurations ranging from 4×4 to 64×64, with mobility scenarios from static to high-speed (300 km/h). 3gpp tr 38.901 channel model: we generate 30,000 channel realizations using the standardized 3gpp tr 38.901 channel model [36]. this includes urban macro (uma), urban micro (umi), and rural macro (rma) scenarios with various user speeds from 3 km/h to 120 km/h. the channel matrices incorporate realistic path loss, shadowing, and small-scale fading effects following the 3gpp specifications. ieee mimo data challenge: this dataset [37] contains real-world channel measurements from the ieee mimo data challenge, including both indoor and outdoor scenarios. the dataset provides approximately 20,000 channel matrices measured in diverse environments with various antenna configurations. we particularly focus on the high-mobility scenarios and those with significant multipath effects. we validated the statistical properties of our datasets against theoretical channel models and real-world measurements. the empirical eigenvalue distributions of the channel correlation matrices confirm that these datasets accurately represent realistic mimo channels. 3.6. evaluation metrics we evaluate the performance of both traditional and deep learning approaches using the following comprehensive set of metrics: ▪ signal-to-interference-plus-noise ratio (sinr): 2 signal 2 2 interference noise | | sinr ‍| | d i i d p p p   = = + + hwx hwx (33) where dx is the desired signal and ix represents interfering signals. ▪ bit error rate (ber): numberofbiterrors ber totalnumberoftransmittedbits = (34) ▪ spectral efficiency (bits/s/hz): 2 ( )se log 1 sinr= + (35) ▪ computational complexity: measured in floating-point operations (flops) and execution time (ms) required to compute the beamforming weights. ▪ convergence speed: measured as the number of iterations or samples required to achieve within 5% of the optimal sinr. optimalconvergencetime min{ :sinr( ) 0.95 sinr }t t=   (36) ▪ adaptability: quantifies an algorithm’s ability to maintain performance in changing channel conditions, defined as: optimal,1 sinr1 adaptability ‍ sinr t t tt t = =  (37) 208 m. mohamed, f. aljuaid, mhd w. koubeisi where sinrt is the achieved sinr at time t sinroptimal,t is the theoretical optimal sinr at time t and t is the number of time steps in the evaluation period. higher values indicate better adaptability to changing conditions. ▪ robustness: measures performance degradation under channel estimation errors or model mismatch, defined as: perturbed perfect sinr robustness sinr = (38) where sinrperturbed is the sinr achieved with perturbed channel information (containing estimation errors) and sinrperfect is the sinr with perfect channel information. values closer to 1 indicate greater robustness. for each metric, we compute statistical measures including mean, variance, 95% confidence intervals, and p-values to establish the statistical significance of observed differences. we use paired t-tests for comparing algorithm performance on the same channel realizations, with bonferroni correction for multiple comparisons. additionally, we introduce a composite performance metric that combines multiple objectives: 1 2 3 4( ) sinr( ) ber( ) complexity( ) adaptability( )j    =  −  −  + w w w w w (39) where i are weight coefficients that can be adjusted based on application requirements. 3.7. experimental setup all experiments were conducted on a standardized hardware platform to ensure reproducibility: an intel xeon e5-2680 v4 processor with 128gb ram and 4× nvidia tesla v100 gpus. traditional optimization algorithms were implemented in matlab r2021a, while deep learning approaches were implemented in python 3.8 with tensorflow 2.5. to validate performance in resource-constrained environments, selected algorithms were also tested on an nvidia jetson agx xavier embedded platform. for hardware validation, we implemented key algorithms on universal software radio peripheral (usrp) x310 platforms with ubx-160 daughterboards operating at 2.4 ghz with 20 mhz bandwidth. each experiment was repeated 50 times with different random seeds to ensure statistical validity. we report 95% confidence intervals for all results and conduct hypothesis testing to establish the statistical significance of observed differences. for deep learning approaches, we used a training/validation/test split of 70%/15%/15%. models were trained using early stopping with a patience of 10 epochs to prevent overfitting. we also employed k-fold cross-validation (k=5) to ensure robustness of the results. 4. results and discussion this section presents our comparative performance analysis between deep learning approaches and traditional optimization algorithms for adaptive beamforming in mimo systems. we analyze the results across various scenarios, highlighting the strengths and limitations of each approach. deep learning and traditional algorithms for mimo beamforming 209 4.1. performance in static environments fig. 1 sinr performance of different algorithms in static channel conditions with varying snr levels. deep learning approaches match traditional algorithms at medium-to-high snr but underperform at low snr in high-snr regimes (>15 db), both traditional optimization algorithms and deep learning approaches achieve comparable performance, with differences less than 0.5 db (p > 0.05, paired t-test). socp consistently yields the highest sinr (average 24.8 db at 20 db snr), followed closely by model-based deep learning (24.5 db) and mvdr (24.3 db). the performance gap is not statistically significant in this regime (p = 0.14). in low-snr regimes (<5 db), traditional algorithms significantly outperform pure deep learning approaches by 1.2–2.8 db (p < 0.01). at 0 db snr, socp achieves an average sinr of 8.7 db, compared to 6.5 db for the best-performing deep learning method (mbdl). this performance gap can be attributed to the fact that traditional algorithms incorporate optimal statistical estimators specifically designed for low-snr conditions, while neural networks struggle to generalize to these more challenging scenarios. theoretical analysis confirms these empirical observations. for mvdr beamforming, the sinr is bounded by: 2 1 min 2 1 s ( inr tr( ) )s s n mvdr n s n    − −   r r r r (40) where rs and rn are the signal and noise correlation matrices, respectively. this bound becomes tighter as snr decreases, explaining the superior performance of traditional algorithms in low-snr conditions. table 2 presents the bit error rate performance across different modulation schemes for all evaluated algorithms. 210 m. mohamed, f. aljuaid, mhd w. koubeisi table 2 bit error rate (ber) performance in static channels 2*algorithm qpsk 16-qam 64-qam lms 1.82  .11 5.64  .24 18.92  .73 rls 1.43  .09 4.21  .18 15.37  .65 mvdr 1.25  .07 3.86  .15 14.52  .59 socp 1.18  .06 3.54  .14 13.68  .54 fc-dnn 1.95  .12 6.12  .27 21.43  .85 cnn 1.53  .10 4.86  .21 17.25  .73 rnn-lstm 1.78  .11 5.42  .25 19.67  .78 mbdl 1.35  .08 4.18  .17 16.32  .68 for qpsk modulation at high snr (20 db), all algorithms achieve similar ber (differences < 5  10−4p > 0.05). for higher-order modulations (16-qam, 64-qam), traditional algorithms demonstrate a statistically significant performance advantage (p < 0.01), especially in challenging channel conditions. the cnn architecture achieves ber within 15% of traditional methods for 16-qam, making it the best-performing pure deep learning approach for this metric. the model-based deep learning (mbdl) approach performs significantly better than other neural architectures (p < 0.01), achieving ber within 8% of socp for all modulation schemes. this highlights the advantage of incorporating domain knowledge into neural network design. statistical analysis of the ber results shows a strong correlation (r = 0.92, p < 0.001) between algorithm performance and channel condition number, with all algorithms exhibiting degraded performance in ill-conditioned channels (high condition number). traditional algorithms demonstrate greater robustness to ill-conditioning, with performance degradation of 28% compared to 41% for pure deep learning approaches. 4.2. performance in dynamic environments fig. 2 sinr tracking performance in dynamic channel conditions with varying user mobility. deep learning approaches demonstrate superior adaptation capabilities in high-mobility scenarios deep learning and traditional algorithms for mimo beamforming 211 in low-mobility scenarios (pedestrian speed, 3 km/h), both traditional and deep learning approaches show similar adaptation capabilities. the average sinr difference between the best traditional algorithm (rls) and the best deep learning approach (rnnlstm) is less than 0.6 db (p = 0.08). as mobility increases, deep learning approaches (especially rnn-lstm and mbdl) significantly outperform traditional methods. at vehicular speed (60 km/h), rnn-lstm achieves 2.3 db higher sinr than rls (p < 0.01). at high speed (120 km/h), rnn-lstm maintains sinr within 1.2 db of the optimum, while traditional algorithms degrade by 3.5–5.2 db (p < 0.001). in extreme mobility scenarios (500 km/h), deep learning achieves 23.7% higher average sinr compared to the best traditional algorithm (p < 0.001). this superior performance can be attributed to the ability of deep learning models to learn predictive features from temporal patterns in channel evolution. theoretical analysis of tracking performance in timevarying channels shows that for a channel with temporal correlation coefficient  and algorithm convergence rate  the steady-state sinr loss is approximately proportional to (1 − ) / . this explains why algorithms with faster convergence (deep learning during inference) outperform slower-converging traditional methods in high-mobility scenarios. the convergence time measurements following abrupt channel changes are summarized in table 3, clearly demonstrating the speed advantage of deep learning approaches. table 3 convergence time following abrupt channel changes 2*algorithm time (ms) to 90% optimal sinr to 99% optimal sinr lms 32.5  .1 78.4  .6 rls 18.7  .5 42.6  .2 mvdr 15.3  .2 38.5  .9 socp 24.6  .9 52.8  .7 fc-dnn 3.8  .3 8.6  .7 cnn 3.2  .3 7.5  .6 rnn-lstm 2.4  .2 5.8  .5 mbdl 4.1  .4 9.2  .8 deep learning approaches demonstrate significantly faster convergence following abrupt channel changes (p < 0.001). the fastest traditional algorithm (mvdr) requires 15.3 ms to reach 90% of optimal sinr, while rnn-lstm achieves the same level in just 2.4 ms–a 6.4× improvement. to assess robustness to channel estimation errors, we introduced controlled perturbations to the channel matrices. with 10% channel estimation error, cnn and rnn-lstm lose only 1.8 db and 2.1 db sinr respectively, compared to 3.5 db for mvdr and 3.2 db for rls (p < 0.01). this demonstrates the superior robustness of deep learning approaches to imperfect channel state information. the hardware validation on usrp x310 platforms confirms these simulation results. in a controlled laboratory environment with programmable channel emulation, we measured convergence times within 12% of the simulation predictions. the relative performance ranking of algorithms remained consistent across simulation and hardware implementation. 212 m. mohamed, f. aljuaid, mhd w. koubeisi 4.3. computational complexity and resource requirements fig. 3 computational complexity comparison between traditional and deep learning approaches across different mimo configurations for small mimo systems (4×4), lms is the most computationally efficient algorithm with approximately 2,500 flops per beamforming update. as the mimo size increases, the complexity of traditional methods grows rapidly, with socp scaling as o(n³), where n is the number of antennas. in contrast, deep learning approaches maintain relatively stable inference complexity once trained. for massive mimo configurations (64×64, 128×128), deep learning requires 65–85% fewer flops compared to traditional optimization algorithms (p < 0.001). the asymptotic complexity analysis is confirmed by our empirical measurements. for a 128×128 mimo system, socp requires approximately 6.8×10⁸ flops, compared to 9.7×10⁷ flops for cnn inference–a reduction of 85.7%. theoretically, the computational complexity of traditional algorithms can be expressed as: lms: ( )t ro n n (41) 2rls: ( )t ro n n (42) 2 3mvdr : ( )t r to n n n+ (43) 3 3socp : ( )t ro n n (44) for deep learning approaches, the inference complexity is: 2fc dnn: ( )t ro n n h h− + (45) 2cnn : ( )t ro n n k f (46) 2rnn lstm: ( )t ro n n h h− + (47) ( )2mbdl : ( )t r to i n n n+ (48) where h is the largest hidden layer size, k is the kernel size, f is the num ber of filters, and i is the number of iterations/layers. as shown in table 4, the execution time measurements deep learning and traditional algorithms for mimo beamforming 213 across different hardware platforms and mimo configurations confirm the computational efficiency of deep learning approaches, particularly for larger antenna arrays. table 4 execution time comparison on different hardware platforms 3*algorithm execution time (ms) workstation jetson agx xavier 8×8 32×32 8×8 32×32 lms 0.42  .03 3.84  .25 2.35  .18 23.56  .87 rls 0.68  .05 12.57  .96 4.12  .32 87.35  .54 mvdr 0.75  .06 15.32  .12 4.58  .35 128.47  .63 socp 2.34  .18 48.65  .67 14.53  .15 312.84  3.46 fc-dnn 0.85  .07 2.18  .17 3.24  .26 8.76  .71 cnn 0.93  .08 2.45  .19 3.68  .29 9.84  .78 rnn-lstm 1.12  .09 2.87  .22 4.53  .36 11.32  .90 mbdl 0.97  .08 2.52  .20 3.86  .31 10.18  .82 the execution time measurements on different hardware platforms confirm that deep learning approaches are particularly well-suited for resource-constrained systems and larger mimo configurations. on the jetson agx xavier, socp takes 312.84 ms for a 32×32 mimo system, compared to just 9.84 ms for cnn–a 31.8× speedup (p < 0.001). it’s important to note that these measurements focus on inference time for deep learning approaches and do not include the offline training time. the one-time training cost for the neural networks in our experiments ranged from 4.5 hours (fc-dnn) to 18.2 hours (rnnlstm) on our gpu-equipped workstation. memory usage analysis shows that traditional algorithms have minimal memory footprint for small mimo systems but scale poorly with system size. for a 128×128 mimo system, socp requires approximately 524 mb of memory, compared to 48 mb for the largest neural network (rnn-lstm)–a reduction of 90.8%. 4.4. hybrid approach evaluation fig. 4 performance of the proposed hybrid approach across diverse operating conditions compared to individual algorithms. the hybrid approach consistently achieves nearoptimal performance by dynamically selecting the most appropriate algorithm 214 m. mohamed, f. aljuaid, mhd w. koubeisi our proposed hybrid approach dynamically selects the most appropriate algorithm based on the current channel and system state. across all tested scenarios, it achieves 15.3% higher average sinr compared to the best fixed algorithm (p < 0.001). the selection accuracy of the hybrid approach improves over time as it learns from observed performance. after approximately 1,000 iterations, the selection accuracy stabilizes at 92.7%, meaning that it selects the optimal algorithm for the current conditions 92.7% of the time. the computational overhead of the classifier is negligible compared to the performance gains it provides. the selection mechanism requires approximately 0.12 ms per decision, which is less than 5% of the execution time of even the fastest beamforming algorithm. the algorithm selection pattern of the hybrid approach varies across different mobility scenarios. in static conditions, it predominantly selects traditional algorithms (mvdr, socp), while in high-mobility scenarios, it favors deep learning approaches (rnn-lstm, cnn). we analyzed the regret of the hybrid approach, defined as the cumulative difference between the performance of the hybrid approach and that of the optimal algorithm for each condition. the empirical regret grows sub-linearly with time, confirming our theoretical bound of ( log )o t t . the hybrid approach also exhibits excellent adaptability to non-stationary envinments. when we introduced abrupt changes in channel conditions, the approach quickly adapted its selection strategy, typically within 5-10 iterations. 4.5. hardware validation and real-world testing to validate our simulation results in real-world conditions, we implemented key algorithms on usrp x310 software-defined radio platforms. the hardware testbed consisted of 2 usrp x310 devices with ubx-160 daughterboards (one transmitter, one receiver), 4 omnidirectional antennas per device (4×4 mimo configuration), gnu radio software framework for signal processing, and a channel emulator for controlled testing. the hardware experiments confirmed our simulation results with high fidelity. the relative performance ranking of algorithms remained consistent across simulation and hardware implementation, with correlation coefficient r = 0.94 (p < 0.001) between simulated and measured sinr values. in an office environment with moderate mobility, we measured an average sinr of 18.3 db for mvdr, 17.8 db for rls, 19.5 db for cnn, and 20.1 db for rnn-lstm. these values were within 1.2 db of our simulation predictions. the computational efficiency measurements on the embedded platform (usrp onboard cpu) matched our jetson agx xavier results within a margin of 15%, confirming the superior scalability of deep learning approaches for resource-constrained implementations. 4.6. discussion our comprehensive analysis reveals that the choice between traditional optimization algorithms and deep learning approaches for adaptive beamforming depends critically on the specific operating conditions and system requirements. traditional algorithms are preferable in steady-state, slowly varying channels where convergence time is not critical; low-snr environments where statistical optimality is crucial; small-scale mimo systems where computational complexity is manageable; and scenarios requiring theoretical performance guarantees. deep learning approaches are advantageous in dynamic, rapidly varying channels requiring fast adaptation; complex propagation environments with rich deep learning and traditional algorithms for mimo beamforming 215 multipath; resource-constrained or latency-sensitive implementations; and massive mimo systems where traditional methods become computationally prohibitive. the proposed hybrid approach successfully leverages the complementary strengths of both methodologies, achieving consistently superior performance across diverse operating conditions. its ability to dynamically select the most appropriate algorithm based on current conditions makes it particularly well-suited for heterogeneous deployment scenarios. from a theoretical perspective, the performance differences between traditional and deep learning approaches can be understood in terms of the bias-variance tradeoff. traditional algorithms have lower bias (they approach optimal performance given accurate models and sufficient iterations) but higher variance (sensitivity to model mismatch). deep learning approaches have higher bias (they may not achieve theoretical optimality) but lower variance (greater robustness to model mismatch). it’s important to acknowledge the limitations of our study. deep learning approaches require significant offline training data and computational resources. while inference is efficient, the one-time training cost can be substantial. additionally, neural networks lack the theoretical guarantees of traditional methods, which may be problematic for safety-critical applications. the superiority of model-based deep learning (mbdl) over pure data-driven approaches highlights the importance of incorporating domain knowledge into neural network design. by combining the analytical structure of traditional algorithms with the adaptability of deep learning, mbdl achieves a favorable balance between performance, efficiency, and interpretability. 5. conclusion this paper presented a comprehensive comparative analysis of deep learning approaches and traditional optimization algorithms for adaptive beamforming in mimo systems. through extensive evaluation across diverse operating conditions, we identified the specific strengths, limitations, and operational regimes of each methodology. traditional optimization algorithms achieve superior performance in static environments, particularly in low-snr regimes where they outperform deep learning approaches by 1.2–2.8 db in sinr (p < 0.01). deep learning approaches demonstrate advantages in dynamic environments, achieving 23.7% higher average sinr (p < 0.01) in high-mobility scenarios and convergence times 6– 13 times faster than traditional methods. computational complexity analysis reveals that traditional methods scale as o(n³) with mimo size n, while deep learning maintains o(n) inference complexity. our proposed hybrid approach leverages the complementary strengths of both methodologies, achieving 15.3% higher average sinr in mixed scenarios compared to fixed algorithms. future research should focus on developing mathematically rigorous foundations for deep learning approaches in wireless communications, creating more sophisticated hybrid frameworks, exploring lifelong learning approaches, extending the analysis to emerging technologies such as reconfigurable intelligent surfaces, and investigating hardwareaware neural network designs. while neither traditional optimization algorithms nor deep learning approaches uniformly dominate across all scenarios, understanding their relative strengths enables the development of adaptive systems that leverage the most appropriate technique for each specific condition. 216 m. mohamed, f. aljuaid, mhd w. koubeisi references [1] c. liaskos, s. nie, a. tsioliaridou, a. pitsillides, s. ioannidis and i. akyildiz, "a new wireless communication paradigm through software-controlled metasurfaces," ieee commun. mag., vol. 56, no. 9, pp. 162–169, 2018. [2] m. z. chowdhury, m. shahjalal, s. ahmed and y. m. jang, "6g wireless communication systems: applications, requirements, technologies, challenges, and research directions," ieee open j. commun. soc., vol. 1, pp. 957–975, 2020. [3] w. saad, m. bennis and m. chen, "a vision of 6g wireless systems: applications, trends, technologies, and open research problems," ieee network, vol. 34, no. 3, pp. 134–142, 2020. [4] l. liu, et al., "what is the 6g vision? key services, use cases, requirements, and technologies," philos. trans. royal soc. a, vol. 380, no. 2230, 2022. [5] y. niu, y. li, d. jin, l. su and a. v. vasilakos, "a survey of millimeter wave communications (mmwave) for 5g: opportunities and challenges," wirel. netw., vol. 21, no. 8, pp. 2657–2676, 2015. [6] z. lin, t. yang, l. qin, w. guo and r. he, "beamforming designs and performance evaluations for intelligent reflecting surface-assisted wireless communications," ieee open j. commun. soc., vol. 3, pp. 45–64, 2022. [7] s. a. busari, k. m. s. huq, s. mumtaz, l. dai and j. rodriguez, "millimeter-wave massive mimo communication for future wireless systems: a survey," ieee commun. surv. tutor., vol. 20, no. 2, pp. 836–869, 2018. [8] f. meng, k. cheng, y. yang and z. wei, "deep reinforcement learning-based power control for cellfree massive mimo networks," ieee trans. wirel. commun., vol. 21, no. 5, pp. 3188–3202, 2022. [9] k. b. letaief, w. chen, y. shi, j. zhang and y.-j. a. zhang, "the roadmap to 6g: ai empowered wireless networks," ieee commun. mag., vol. 57, no. 8, pp. 84–90, 2019. [10] a. zappone, m. di renzo and m. debbah, "wireless networks design in the era of deep learning: model-based, ai-based, or both?," ieee trans. commun., vol. 67, no. 10, pp. 7178–7195, 2019. [11] k. s. khan and j. usman, "backtracking search optimization algorithm for synthesis of linear antenna arrays with multi-objective functions," ieee trans. antennas propag., vol. 70, no. 2, pp. 1110–1119, 2022. [12] j. zhang, c. chen, x. pei and d. xue, "multi-user power control algorithm based on deep reinforcement learning in fdd massive mimo systems," ieee commun. lett., vol. 24, no. 8, pp. 1753–1757, 2020. [13] a. m. elbir and k. v. mishra, "a survey of deep learning architectures for intelligent reflecting surfaces," ieee commun. surv. tutor., vol. 24, no. 2, pp. 1050–1091, 2022. [14] c. huang, r. mo, c. yuen and a. nallanathan, "deep reinforcement learning-based beamforming and power control for irs-assisted noma networks," ieee trans. veh. technol., vol. 71, no. 8, pp. 8795– 8808, 2022. [15] j. guo and c. yang, "an overview on deep learning-based wireless signal recognition and its recent advances," int. j. comput. intell. syst., vol. 14, no. 1, pp. 788–803, 2021. [16] h. ye, g. y. li and b.-h. f. juang, "power of deep learning for channel estimation and signal detection in ofdm systems," ieee wirel. commun. lett., vol. 7, no. 1, pp. 114–117, 2018. [17] l. liu, c. oestges, j. poutanen, k. haneda, p. vainikainen, f. quitin, f. tufvesson and p. de doncker, "the cost 2100 mimo channel model," ieee wirel. commun., vol. 19, no. 6, pp. 92–99, 2012. [18] z. liu, l. lei, n. zhang, g. kang and s. chatzinotas, "joint beamforming and power optimization with iterative user clustering for miso-noma systems," ieee access, vol. 8, pp. 24288–24301, 2020. [19] a. k. chaudhary, k.-c. chen and h. v. poor, "deep learning based power control for cell-free massive mimo networks," ieee trans. commun., vol. 70, no. 4, pp. 2615–2629, 2022. [20] w. wang, a. liu, q. zhang, l. you, x. gao and g. zheng, "fast and accurate channel estimation for mmwave massive mimo systems with one-bit adcs," ieee trans. wirel. commun., vol. 19, no. 1, pp. 120–134, 2020. [21] w. xia, g. zheng, y. zhu, j. zhang, j. wang and a. p. petropulu, "a deep learning framework for optimization of miso downlink beamforming," ieee trans. commun., vol. 68, no. 3, pp. 1866–1880, 2020. [22] d. wu, y. gu, s. ma, q. li, j. zhu and w. zhang, "distributed energy-efficient power control for wireless networks using deep reinforcement learning," ieee trans. veh. technol., vol. 71, no. 1, pp. 1013–1017, 2022. [23] h. guo, y.-c. liang, j. chen and e. g. larsson, "weighted sum-rate maximization for reconfigurable intelligent surface aided wireless networks," ieee trans. wirel. commun., vol. 19, no. 5, pp. 3064– 3076, 2020. deep learning and traditional algorithms for mimo beamforming 217 [24] a. m. elbir and k. v. mishra, "deep learning for mmwave beam and blockage prediction: applications to 6g terahertz communications," ieee trans. wirel. commun., vol. 21, no. 11, pp. 8691–8704, 2022. [25] y. jin, j. zhang, s. jin and b. ai, "channel estimation for cell-free mmwave massive mimo through deep learning," ieee trans. veh. technol., vol. 68, no. 10, pp. 10325–10329, 2019. [26] z. liu, l. zhang and z. ding, "exploiting bi-directional channel reciprocity in deep learning for low rate massive mimo csi feedback," ieee wirel. commun. lett., vol. 8, no. 3, pp. 889–892, 2019. [27] q. wu, k. xu, j. zhang and p. zhang, "a cnn-based end-to-end learning framework toward intelligent communication systems," ieee access, vol. 8, pp. 77891–77904, 2020. [28] j. gao, c. zhong, x. chen, h. lin and z. zhang, "unsupervised learning for passive beamforming," ieee commun. lett., vol. 24, no. 5, pp. 1052–1056, 2020. [29] m. k. abdel-aziz, s. samarakoon, m. bennis and w. saad, "ultra-reliable and low-latency vehicular communication: an active learning approach," ieee commun. lett., vol. 24, no. 2, pp. 367–370, 2020. [30] l. xu and f. gao, "model aided deep learning based mimo ofdm receiver with nonlinear power amplifiers," in proceedings of the ieee wirel. commun. netw. conf. (wcnc), pp. 1–6, 2021. [31] w. fan, j. liang, g. yu, h. c. so, and j. li, "robust capon beamforming via admm," in proceedings of the icassp 2022 2022 ieee international conference on acoustics, speech and signal processing (icassp), pp. 4345–4349, apr. 2019. [32] a. zappone, m. di renzo, and m. debbah, "wireless networks design in the era of deep learning: modelbased, ai-based, or both?," ieee transactions on communications, vol. 67, no. 10, pp. 7331–7376, jun. 2019. [33] z. song, j. yang, x. mei, t. tao, and m. xu, "harmonic current suppression method with adaptive filter for permanent magnet synchronous motor," international journal of electronics, vol. 108, no. 6, pp. 983– 1013, sep. 2020. [34] e. rodriguez, b. otero, n. gutierrez, and r. canal, "a survey of deep learning techniques for cybersecurity in mobile networks," ieee communications surveys tutorials, vol. 23, no. 3, pp. 1920– 1955, jan. 2021. [35] o. s. falade, "deepmimo: a generic deep learning dataset for millimeter wave and massive mimo applications to vehicular communications," ssrn electronic journal, jan. 2023. [36] e. endovitskiy, a. kureev, and e. khorov, "reducing computational complexity for the 3gpp tr 38.901 mimo channel model," ieee wireless communications letters, vol. 11, no. 6, pp. 1133–1136, mar. 2022. [37] m. raissi, p. perdikaris, and g. e. karniadakis, "physics-informed neural networks: a deep learning framework for solving forward and inverse problems involving nonlinear partial differential equations," journal of computational physics, vol. 378, pp. 686–707, nov. 2018. [38] h. sarieddeen, n. saeed, t. y. al-naffouri, and m.-s. alouini, "next generation terahertz communications: a rendezvous of sensing, imaging, and localization," ieee communications magazine, vol. 58, no. 5, pp. 69–75, may 2020. 13010 facta universitatis series: electronics and energetics vol. 38, no 2, june 2025, pp. 239 261 https://doi.org/10.2298/fuee2502239b © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper asynchronous monotonic multiplexer padmanabhan balasubramanian1, nikos e. mastorakis2 1college of computing and data science, nanyang technological university, singapore 2technical university of sofia, english language faculty of engineering (elfe), department of industrial engineering, sofia, bulgaria orcid ids: padmanabhan balasubramanian https://orcid.org/0000-0001-9412-4773 nikos e. mastorakis n/a abstract. among input-output (io) mode asynchronous circuits, indicating circuits are more popular and robust. however, they may not be efficient in design metrics such as cycle time, area, and power dissipation. in contrast, monotonic circuits, which are also io mode asynchronous circuits but less explored, can potentially optimize the design metrics better than indicating circuits. recent studies have demonstrated that monotonic circuits outperform indicating circuits in arithmetic operations like addition and multiplication. while monotonic circuits may be labeled theoretically less robust than indicating circuits, their operation is similar in practice. this article presents a novel, compact monotonic io mode asynchronous multiplexer. the multiplexer is significant in digital circuits as it has applications across various domains including communication systems, digital signal processing, memory addressing, etc. we considered dual-rail encoding for the multiplexer and employed four-phase handshaking. two four-phase handshaking schemes are available namely, return-to-zero (rtz) handshaking and returnto-one (rto) handshaking, and we considered both for this work. compared to an optimized early output quasi-delay-insensitive multiplexer, which is derived by modifying a strongindication multiplexer and represents the best among the existing designs, the proposed monotonic multiplexer achieves a 67% (69%) reduction in latency, an 84% (84%) reduction in area, and a 66% (67%) reduction in power for rtz (rto) handshaking. since the multiplexer is a small component, its effectiveness should be evaluated by integrating it into a circuit setup. in this context, we used existing multiplexers and the proposed multiplexer to realize io mode asynchronous 32-bit carry select adders (cslas) while keeping the compute element, namely the full adder consistent. we estimated the design metrics of cslas incorporating different multiplexers, implemented using a 28-nm bulk cmos process technology. the csla utilizing the proposed monotonic multiplexer achieved a 43% (44%) reduction in cycle time and a received september 17, 2024; revised november 16, 2024 and january 07, 2025; accepted january 14, 2025 corresponding author: padmanabhan balasubramanian college of computing and data science, nanyang technological university, singapore e-mail: balasubramanian@ntu.edu.sg https://orcid.org/0000-0001-9412-4773 240 p. balasubramanian, n.e. mastorakis 28% (28%) reduction in area compared to the csla utilizing an early output quasidelay-insensitive multiplexer for rtz (rto) handshaking with no power penalty. key words: asynchronous circuits, digital logic design, low power, high-speed, cmos 1. introduction the multiplexer is a basic and important component that has practical applications across various domains in electronics, telecommunications, and digital systems. in communication systems, multiplexers combine multiple data streams into a single stream for transmission over a shared medium like a cable or a wireless channel. this is known as multiplexing, and it allows for more efficient use of a communication channel. in analog-to-digital conversion, where analog signals should be converted into digital format for processing by digital systems, multiplexers are used to select one of many analog input signals for conversion by an analogto-digital converter. in digital signal processing, multiplexers are used to select different data streams or inputs for processing by digital signal processing algorithms or hardware. in memory systems, multiplexers are used for memory address decoding where they are used to select an appropriate memory location based on the address provided by a central processing unit. in control systems, multiplexers are used to select different control signals or inputs to control various processes or devices. multiplexers are also used in testing and measurement equipment to select different input signals for measurement by a single instrument. in digital video broadcasting systems, multiplexers are used to combine multiple digital video streams, audio streams, and other data into one transport stream for transmission. in telecommunication networks, multiplexers play a crucial role in combining multiple voice or data channels into higher-order transmission links, optimizing bandwidth usage. in sensor networks, multiplexers can be used to aggregate data from multiple sensors before transmitting the data over to a communication network. in industrial automation systems, multiplexers select different sensors, actuators, or control signals in manufacturing processes or automated systems. this paper introduces a multiplexer that falls within the monotonic category of inputoutput (io) mode asynchronous circuits. these circuits typically encode data using delayinsensitive codes and follow a four-phase handshake protocol for data exchange. in contrast to synchronous circuits that depend on a clock signal, io mode asynchronous circuits function based on events, which enhances their robustness. the event-driven approach makes io mode asynchronous circuits more resilient to variations in process, voltage, and temperature, thus improving their adaptability [1,2]. furthermore, io mode asynchronous circuits are modular [3,4], self-checking [5], less affected by electromagnetic interference than synchronous designs [6], and naturally resistant to side-channel attacks [7], making them particularly suitable for security-sensitive applications [8]. asynchronous circuits used in io systems are commonly classified into quasi-delayinsensitive (qdi) and non-qdi categories. qdi circuits rely on a concept called isochronic forks [9], which refers to electrical nodes with multiple outgoing wires, functioning under the premise that signals on these wires transition at the same time. this assumption generally applies to both microelectronics and nanoelectronics [10]. qdi circuits ensure that outputs are generated only after all inputs have been received and processed, and internal computations are completed. while this feature improves the reliability of qdi circuits, it also results in greater implementation costs, as these circuits tend to require more area, have higher latency and cycle times, and dissipate more power than non-qdi circuits. asynchronous monotonic multiplexer 241 qdi circuits are categorized into several types: strong indication [11], weak indication [11], and early output qdi (eoqdi) [12]. in strong indication circuits, outputs are not generated until all primary inputs have been received and processed. weak indication circuits, on the other hand, allow some outputs to be produced once certain inputs have been processed, though the final output will appear only after all inputs have been processed. eoqdi circuits are designed to generate outputs as soon as some inputs are processed, especially when a spacer is introduced. in eoqdi circuits, isochronic forks assumed for the primary inputs ensure that any delayed inputs are duly acknowledged. non-qdi io mode asynchronous circuits consist of relative-timed circuits [13] and monotonic circuits [14,15]. relative-timed circuits rely on certain timing constraints to properly sequence input signals for output generation. monotonic circuits, however, maintain consistent signal transitions throughout the circuit. in a monotonically rising circuit, a rising transition (e.g., binary 0 to 1) at the primary inputs triggers corresponding rising transitions at both intermediate and primary outputs. conversely, in a monotonically falling circuit, a falling transition (e.g., binary 1 to 0) at the inputs results in falling transitions at the outputs. a circuit may exhibit monotonic behavior with rising, falling, both, or neither transition. while synchronous circuits typically do not show monotonicity, io mode asynchronous circuits are generally monotonic. in this discussion, “monotonic circuits” specifically refer to io mode asynchronous circuits that support both rising and falling behaviors. although monotonic circuits often produce early outputs, they are not deemed qdi because they do not require the completion of all internal computations before generating outputs. non-qdi circuits, which impose fewer constraints than qdi circuits, provide greater flexibility and contribute to reduced circuit complexity, thereby achieving more efficient designs. recent studies have shown that monotonic circuits outperform qdi circuits in computer arithmetic tasks such as addition [16] and multiplication [17]. the organization of this article is as follows: section 2 describes the foundational concepts of io mode asynchronous circuit design. section 3 reviews traditional indicating multiplexers along with an eoqdi multiplexer. section 4 presents the design of the proposed monotonic multiplexer. section 5 compares the design metrics of various multiplexers and 32-bit asynchronous carry select adders implemented using these multiplexers. finally, section 6 concludes this article with a summary. 2. fundamentals of io mode asynchronous circuit design fig. 1a presents a block diagram of an io mode asynchronous circuit pipeline [1]. each stage in this pipeline consists of an asynchronous circuit placed between sets of input and output registers. the input registers may function as output registers for the previous stage, while the output registers can serve as input registers for the following stage. the input registers supply inputs to the asynchronous circuit for processing. a completion detector on the input side indicates the reception of all inputs, and on the output side, it indicates the completion of all outputs. figs. 1b and 1c show examples of completion detectors for return-to-zero (rtz) and return-to-one (rto) handshaking schemes respectively, which will be discussed further in this section. the completion detector associated with the output registers sends an output acknowledgment signal (ack_o), which, after a boolean inversion, becomes the input acknowledgment signal (ack_i). ack_i allows the input registers to supply new inputs to the asynchronous 242 p. balasubramanian, n.e. mastorakis circuit. in an io mode asynchronous circuit, “handshaking” refers to the communication protocol followed between input and output registers. fig. 1 (a) block diagram of a single pipeline stage in an io mode asynchronous circuit. sample completion detector design for (b) rtz handshaking and (c) rto handshaking. (d) logic symbol and static cmos transistor-level design for a 2input c-element, created by adding feedback to an ao222 complex gate in an io mode asynchronous circuit, the muller c-element [18] functions as a register. when all inputs to the c-element are either 0 or 1, the output will match this value, producing a 0 or 1 accordingly; if the inputs are mixed, the output retains its current state. fig. 1d shows inputs x and y feeding into the c-element, with z as the output. this figure provides the logic symbol, transistor-level structure, and output equation for the c-element. a 2-input c-element can be realized at the transistor level by asynchronous monotonic multiplexer 243 adding feedback to a static cmos ao222 complex gate [19]. multiple custom designs for the c-element have been developed and evaluated in [20,21]; however, this study employs a semi-custom design based on the approach followed in [19]. in the input registers of fig. 1a, each c-element connects one input to ack_i and the other to an encoded input signal rail. in io mode asynchronous circuits, delay-insensitive codes [22], such as dual-rail (also known as two-rail, double-rail, or 1-of-2 code), are frequently used for encoding inputs and outputs. we will now explain how dual-rail encoding is applied to inputs and outputs within the context of rtz and rto handshaking, followed by an overview of each handshaking scheme. for dual-rail encoding under the rtz handshaking scheme [1], an input signal, denoted by i, is represented with two wires say, i1 and i0. when i = 1, the encoding is set to i1 = 1 and i0 = 0; when i = 0, it is encoded as i1 = 0 and i0 = 1. these configurations represent ‘data’ according to the rtz handshake scheme. the combination i1 = i0 = 0 acts as the ‘zero spacer’ that separates successive data in rtz handshaking. the encoding i1 = i0 = 1 is considered invalid in rtz handshaking, as the encoding is designed to remain unordered [23]. for rto handshaking [24], the dual-rail encoding uses two wires say, i1 and i0, to represent the input signal i. here, when i = 1, the encoding is i1 = 0 and i0 = 1; when i = 0, the encoding is i1 = 1 and i0 = 0. these two configurations indicate ‘data’ according to the rto handshake scheme. the combination i1 = i0 = 1 serves as the ‘one spacer’ that separates successive data in rto handshaking. the combination i1 = i0 = 0 is invalid for rto handshaking, as unordered encoding is required [23]. figs. 1b and 1c depict examples of dual-rail encoded inputs, denoted as (p1, p0) and (q1, q0). in fig. 1b, a completion detector for rtz handshaking is shown, consisting of or gates at the initial logic level. each two-input or gate combines the two rails of a particular encoded input. the outputs from these or gates are then routed to a c-element, or a chain of c-elements, to produce the output acknowledgment signal (ack_o). in contrast, fig. 1c illustrates a completion detector for rto handshaking, which utilizes and gates at the first logic level. each two-input and gate combines the two rails of the encoded inputs, and the resulting outputs are subsequently directed to a c-element or a series of c-elements to generate ack_o. we shall now describe rtz and rto handshaking protocols. in rtz handshaking, the process begins with the first phase, where ack_i is set to 1 and ack_o is at 0. this signals the input registers to send data to the asynchronous circuit. during this phase, one of the two rails of each encoded input is set to 1, indicating that the data is ready for processing. in the second phase, the output registers receive the processed data from the asynchronous circuit, and the completion detector sets ack_o to 1. in the third phase, the input registers wait for ack_i to return to 0 before sending the spacer to the asynchronous circuit for processing. in the final phase, the output registers receive the spacer, and the completion detector sets ack_o back to 0. this concludes one data transaction and signals that the asynchronous circuit is ready for the next data transaction when ack_i is set to 1 again. as a result, in rtz handshaking, the input sequence follows the pattern of ‘data–spacer–data–spacer’, and so on. in rto handshaking, the process starts with the first phase, where ack_i is set to 1 and ack_o is at 0. this signals the input registers to send the spacer to the asynchronous circuit for processing. during this phase, all rails of the encoded inputs are set to 1, indicating that the spacer is ready to be processed by the asynchronous circuit. in the second phase, the asynchronous circuit generates the spacer, which is then received by 244 p. balasubramanian, n.e. mastorakis the output registers. the completion detector for the output registers sets ack_o to 1. in the third phase, the input registers wait for ack_i to return to 0 before sending the data to the asynchronous circuit, with one of the two rails of each encoded input set to 0. in the fourth phase, the asynchronous circuit processes the data and produces the output, which is then received by the output registers. the completion detector sets ack_o back to 0. this marks the end of a data transaction and indicates that the asynchronous circuit is ready for the next data transaction when ack_i is set to 1 again. thus, in rto handshaking, the input sequence follows the pattern of ‘spacer–data–spacer–data’ and so forth. to maintain delay insensitivity in io mode asynchronous circuits, a spacer is placed between successive input data. in a monotonic circuit, this spacer ensures that data and spacer do not conflict, thus preserving external delay insensitivity throughout the handshaking process. in the io mode asynchronous pipeline depicted in fig. 1a, the key timing metric is the ‘cycle time’, which represents the total duration required to complete a single data transaction. the maximum time taken to process data is known as forward latency, while the maximum time to process the spacer is referred to as reverse latency. forward and reverse latency may vary based on the circuit’s design and underlying logic. the overall cycle time of an io mode asynchronous circuit is the sum of the forward and reverse latencies. the critical path that determines the latency of the circuit, which includes the input register bank and the asynchronous circuit, is shown by the red dashed line in fig. 1a. 3. conventional asynchronous multiplexer designs existing io mode multiplexer designs follow the strong indication, as the multiplexer features a single primary output that is dual-rail encoded. hence, multiplexers cannot be designed as weak indication circuits since weak indication circuits require a minimum of two encoded primary outputs – one generated after processing a subset of the primary inputs, and the other produced after processing the remaining or all the inputs. this section will discuss strong indication and eoqdi multiplexers. 3.1. dims multiplexer the delay-insensitive minterm synthesis, also called dims [25], requires listing a function's distinct product terms that include all the support variables. let us consider (a1, a0) and (b1, b0) as the dual-rail encoded inputs, (s1, s0) as the dual-rail encoded select signal, and (m1, m0) as the dual-rail encoded output of a 2-to-1 multiplexer. in this case, the output expressions for the multiplexer are given by (1) and (2), which conform to rtz handshaking. equations (1) and (2) imply that when the select signal is binary 0 (i.e., s1 = 0, s0 = 1), input a is selected and forwarded as the output. conversely, input b is selected and forwarded as the output when the select signal is binary 1 (i.e., s1 = 1, s0 = 0). m1 = a0b1s1 + a1b0s0 + a1b1s0 + a1b1s1 (1) m0 = a0b0s0 + a0b0s1 + a0b1s0 + a1b0s1 (2) equations (1) and (2) are represented as sums of disjoint products, where each product term is independent or orthogonal to the others [26]. in the case of rtz handshaking, only one product term in (1) or (2) evaluates to 1 when data is input. conversely, for rto handshaking, only one product term evaluates to 0 under the same conditions. these asynchronous monotonic multiplexer 245 conditions, in which only a single product term evaluates to either 1 or 0 for rtz or rto handshaking, are known as the monotonic cover constraint [1]. from the perspective of physical implementation, this constraint guarantees that one signal path is activated from the primary input to the primary output, thereby avoiding unnecessary transitions on the intermediate gate outputs within the circuit. the monotonic cover constraint is commonly incorporated in io mode asynchronous circuits. fig. 2 shows the logic implementation of a strongly indicating 2-to-1 multiplexer using the dims method, which utilizes c-elements and or gates and is designed for rtz handshaking. if the or gates in this design were replaced with and gates, the resulting logic would be suitable for rto handshaking. in general, by replacing all gates (except the c-elements) in an io mode asynchronous circuit with their boolean duals, a circuit can be transformed from one that corresponds to rtz handshaking to one that corresponds to rto handshaking and vice versa. this principle has been proved through logical induction in [27]. fig. 2 logic realization of a 2-to-1 multiplexer based on the dims method (corresponding to rtz handshaking) 3.2. toms’ multiplexer toms’ method for strongly indicating logic synthesis of combinational functions (post-encoding) [28,29] employs standard multi-level logic synthesis techniques [30]. these techniques involve extracting one or more product terms (a sum of multiple products) by solving the rectangle covering problem, which is efficiently tackled using a sparse-matrix approach developed by rudell [31]. once the product terms are identified, they are substituted as intermediate variables into the original logic expressions. the extraction phase involves finding and creating common sub-functions and variables, while the substitution phase inserts an intermediate function x into a larger function y, where y is expressed in terms of its original inputs and x. these processes are similar to boolean division and multiplication, respectively. 246 p. balasubramanian, n.e. mastorakis fig. 3 displays the logical implementation of a strongly indicating toms 2-to-1 multiplexer for rtz handshaking, which is composed of c-elements and or gates. to obtain the corresponding multiplexer circuit for rto handshaking, the or gates should be replaced with and gates. fig. 3 2-to-1 multiplexer based on toms’ method (corresponding to rtz handshaking) 3.3. early output qdi multiplexer equations (1) and (2) given for the dims multiplexer can be simplified to remove logical redundancy. in (1), the sum of products a1b1s1+a1b1s0 simplifies to a1b1, and similarly, in (2), a0b0s1+a0b0s0 simplifies to a0b0. as a result, the strong indication multiplexer based on the dims method can be modified to create an eoqdi multiplexer that synthesizes (3) and (4). fig. 4, derived based on (3) and (4), represents the circuit for rtz handshaking. to convert this to an equivalent circuit for rto handshaking, the or gates in fig. 4 should be replaced with and gates. m1 = a0b1s1 + a1b0s0 + a1b1 (3) m0 = a0b1s0 + a1b0s1 + a0b0 (4) fig. 4 early output qdi multiplexer (corresponding to rtz handshaking) asynchronous monotonic multiplexer 247 3.4. sidco and sidcao multiplexers in [32], two strongly indicating multiplexer designs were proposed: sidco, which uses c-elements and or gates, and sidcao, which incorporates c-elements, and gates, and or gates. these designs are illustrated in figs. 5a and 5b, both of which are intended for rtz handshaking. to adapt them for rto handshaking, the or gates in figs. 5a and 5b should be swapped with and gates and the and gates should be replaced by or gates. the sidco and sidcao multiplexers implement (5) and (6), given below. m1 = a1s0 + b1s1 (5) m0 = a0s0 + b0s1 (6) fig. 5 (a) sidco multiplexer and (b) sidcao multiplexer, corresponding to rtz handshaking. in fig. 5a, the intermediate output (nm1, nm0) is functionally the same as the primary output (m1, m0) of the multiplexer. however, to ensure a strong indication, an internal completion detector is used to verify the arrival of the multiplexer inputs (a1, a0) and (b1, b0). this internal completion detector, highlighted within the blue dotted box in fig. 5a, generates an output labeled ncd. ncd is synchronized separately with nm1 and nm0 to yield the final primary output (m1, m0). in fig. 5b, the c-elements that generate the products a1s0, b1s1, a0s0, and b0s1 in fig. 5a are replaced with and gates. to ensure a strong indication, an internal completion detector is introduced to verify the arrival of both the multiplexer inputs and the select signal. this completion detector, highlighted within the red dotted box in fig. 5b, produces an output labeled icd. the intermediate output (im1, im0) behaves identically to the primary output (m1, m0). however, im1 and im0 are synchronized individually with icd to produce the final primary output (m1, m0). 248 p. balasubramanian, n.e. mastorakis 4. proposed asynchronous monotonic multiplexer the multiplexers discussed till now are either strongly indicating or eoqdi. in contrast, the multiplexer introduced here is a monotonic circuit. the circuit diagrams of the proposed multiplexer are presented in figs. 6a and 6b for rtz and rto handshaking. fig. 6 proposed multiplexer corresponding to handshake schemes: (a) rtz and (b) rto the proposed multiplexer, designed for rtz handshaking, uses two ao22 complex gates, which implement (5) and (6). the dual of the ao22 complex gate is the oa22 complex gate, so for rto handshaking, two oa22 gates are used. in comparison to figs. 2 through 5, fig. 6 shows that the proposed multiplexer does not incorporate any celements, unlike the other designs. additionally, this proposed design represents an optimized gate-level realization of a 2-to-1 multiplexer in io mode asynchronous circuit type, requiring only ten transistors for a static cmos implementation. as mentioned in section 1, monotonic circuits are more flexible than qdi circuits and only need to ensure the monotonicity of signal transitions for data and spacer. we shall explain the monotonic and early output operation of the proposed multiplexer based on rtz and rto handshake schemes by considering example scenarios. typically, for rtz handshaking, when data is applied, the signal transitions will rise monotonically (from 0 to 1) through the primary inputs and any intermediate outputs to the primary outputs. for the spacer, the signal transitions will fall monotonically (from 1 to 0) from the primary inputs through the intermediate outputs to the primary outputs. in fig. 6a, when data is input, if a1 = s0 = 1 or b1 = s1 = 1, the output m1 could assume 1 early without waiting for b1/b0 to assume 1 in the former case and a1/a0 to assume 1 in the latter case. given this, any late transition of b1/b0 to 1 (in the former case) and a1/a0 to 1 (in the latter case) will be acknowledged by the completion detector. since the isochronic fork assumption is applied to the primary inputs, the acknowledgment provided by the completion detector applies to the multiplexer as well. when the spacer is applied, m1 can transition to 0 early, even if a1 or s0 (if they were 1 previously), or b1 or s1 (if they were 1 previously), change to 0 without waiting for all inputs to reach 0. however, the next data will only be supplied to the monotonic multiplexer after all primary inputs have been reset to 0, after indication by the completion detector. since the isochronic fork assumption applies to all primary inputs, the rtz condition of all inputs, as confirmed by the completion detector, is also applicable to the multiplexer. these example scenarios considered show that both monotonic and early output operation manifests in the proposed multiplexer for the application of data and spacer with respect to rtz handshaking. asynchronous monotonic multiplexer 249 typically, for rto handshaking, when the spacer is applied, the signal transitions rise monotonically (from 0 to 1) through the primary inputs and any intermediate outputs to the primary outputs. in contrast, when data is applied, the signal transitions fall monotonically (from 1 to 0) from the primary inputs through any intermediate outputs to the primary outputs. referring to fig. 6b, when the spacer is provided, all inputs (a1, a0, b1, b0, s1, and s0) will be set to 1, which causes m1 and m0 to assume 1. due to the properties of or logic, if a1, b1, a0, and b0 are all 1, m1 and m0 can be set to 1 early, without waiting for s1 and s0 to change to 1. however, if s1 and s0 take longer to reach 1, this will be confirmed by the completion detector before the data is supplied to the multiplexer. as the isochronic fork assumption holds for the primary inputs, the multiplexer is said to acknowledge that s1 and s0 have reached 1 once the completion detector confirms this. now, let us consider an example scenario when data is supplied after the application of the spacer. if a1 and s0 assume 0 or if b1 and s1 assume 0, m1 could switch to 0 early, without waiting for b1/b0 to assume 0 in the former case and a1/a0 to assume 0 in the latter case. given this, any late transition of b1/b0 to 0 (in the former case) or a1/a0 to 0 (in the latter case) will be acknowledged by the completion detector. since the isochronic fork assumption applies to all primary inputs, the acknowledgment provided by the completion detector is said to apply to the multiplexer as well. thus, the example scenarios considered imply that both monotonic and early output operation manifests in the proposed multiplexer for the application of both data and spacer with respect to rto handshaking. fig. 7 shows a screenshot of the input-output simulation waveforms of the proposed multiplexer based on rtz handshaking. simulations were performed using synopsys vcs by supplying all distinct inputs at a latency of 1ns. the (zero) spacer was inserted between two data inputs. in fig. 7, (a1, a0) and (b1, b0) represent the multiplexer inputs, (s1, s0) represents the multiplexer select input, and (z1, z0) represents the multiplexer output. fig. 7 a screenshot of simulation waveforms of the proposed multiplexer corresponding to rtz handshaking 250 p. balasubramanian, n.e. mastorakis three sample markers, namely m1, m2, and m3 are shown in fig. 7 which highlight specific instances of input-output and they are mentioned below: ▪ marker m1: a1 = b0 = s0 = 1, and z1 = 1 ▪ marker m2: a1 = b0 = s1 = 1, and z0 = 1 ▪ marker m3: a1 = b1 = s1 = 1, and z1 = 1 fig. 8 shows a screenshot of the input-output simulation waveforms corresponding to the proposed multiplexer based on rto handshaking. again, simulations were performed using synopsys vcs by supplying all distinct inputs at a latency of 1ns. the (one) spacer was inserted between two data inputs. the multiplexer input and output naming convention was maintained the same in fig. 8 as in fig. 7. three sample markers viz. m1, m2, and m3 are shown in fig. 8 which highlights specific instances of input-output and they are mentioned below: ▪ marker m1: a1 = b0 = s0 = 0, and z1 = 0 ▪ marker m2: a1 = b0 = s1 = 0, and z0 = 0 ▪ marker m3: a1 = b1 = s0 = 0, and z1 = 0 fig. 8 a screenshot of simulation waveforms of the proposed multiplexer corresponding to rto handshaking 5. design metrics this section will first present the design metrics of various multiplexers for rtz and rto handshaking. after that, the design metrics of 32-bit carry-select adders (cslas) implemented with conventional and proposed multiplexers will be presented. the csla is used as a case study to illustrate how various multiplexers affect the cycle time, which in turn influences the throughput in an io mode asynchronous design. the io mode asynchronous multiplexers were designed using gates from a 28-nm bulk cmos standard digital cell library [33], with separate implementations for rtz and rto handshaking. the strong indication and eoqdi multiplexers discussed in section 3 utilize the c-element in their logic design. further, the completion detectors require c asynchronous monotonic multiplexer 251 elements for their implementation. since the c-element is not typically available in standard cell libraries, it was manually implemented in static cmos, as illustrated in fig. 1d. a low-leakage typical case cell library was used that operates at a supply voltage of 1.05 v and a junction temperature of 25°c. functional simulations and design metric evaluations, including latency, area, and total (average) power dissipation, were carried out using synopsys eda tools viz. vcs, primetime and primepower. the default wire load model was applied, and all output ports (i.e., multiplexer outputs) were assigned a fanout-of-4 drive strength. a virtual clock was specified just to constrain the inputs and outputs of the adder, though it was not included in the physical design. functional simulations for the multiplexers were conducted using separate test benches for rtz and rto handshaking, with inputs provided at a latency of 1 ns. nevertheless, the test benches corresponding to rtz and rto handshaking are logically equivalent. the design metrics estimated for the multiplexers are given in table 1. table 1 design metrics of multiplexers realized using a 28-nm bulk cmos process. multiplexer latency (ns) area (µm2) power dissipation (µw) corresponding to rtz handshaking dims 0.49 46.76 14.37 toms 0.51 39.65 13.61 eoqdi 0.45 31.01 10.15 sidco 0.44 31.26 20.40 sidcao 0.57 31.51 24.89 proposed (monotonic) 0.15 5.08 3.43 corresponding to rto handshaking dims 0.47 44.73 13.15 toms 0.50 39.65 13.79 eoqdi 0.45 31.01 10.39 sidco 0.38 31.26 19.55 sidcao 0.57 31.51 24.91 proposed (monotonic) 0.14 5.08 3.40 in contrast to the proposed multiplexer depicted in fig. 6, the other multiplexers shown in figs. 2 to 5 require more gates and additional logic levels. as a result, the conventional multiplexers consume more area, have higher power dissipation, and exhibit greater latency, as evident from table 1. among the conventional designs, the eoqdi multiplexer, which has been derived from the dims strong indication multiplexer, is more efficient. its latency is close to the latency of the sidco multiplexer while occupying slightly less area and dissipating approximately half the power. the eoqdi multiplexer’s lower power dissipation compared to the sidco multiplexer can be attributed to the absence of an internal completion detector in the former compared to the latter. generally, an internal completion detector in an io mode asynchronous circuit experiences significant switching activity, as all gates within the detector transition during both data and spacer application. when compared to the eoqdi multiplexer, the proposed monotonic multiplexer delivers a 66.7% (68.9%) reduction in latency, occupies 83.6% (83.6%) less area, and dissipates 66.2% (67.3%) less power for rtz (rto) handshaking. 252 p. balasubramanian, n.e. mastorakis to assess the performance of the proposed multiplexer, a 32-bit carry-select adder (csla) was considered as a demonstration platform, where multiplexers are employed to determine the correct sum output in the final stage. the csla [34] typically involves two parallel adders: one operates with the assumption of a zero carry input, and the other assumes a carry input of one. this method accelerates the addition process by evaluating both addition possibilities simultaneously and then selecting the appropriate result. once both adders have finished their calculations, multiplexers are used to select the correct sum based on the actual carry input. fig. 9 32-bit io mode dual-rail encoded asynchronous csla featuring an 8-8-8-8 input partition in fig. 9, a 32-bit io mode asynchronous csla featuring an 8-8-8-8 input partition is shown [35]. the primary inputs and outputs, and intermediate outputs of the csla are dual-rail encoded. x and y represent the inputs of the csla while sum represents its output. given an 8-8-8-8 input partition, a least significant 8-bit ripple carry adder (rca) viz. rca_1 is used to add input bits x7 to x0 with corresponding input bits y7 to y0. 8bit rca_2 and rca_3 are used to add input bits x15 to x8 with corresponding input bits y15 to y8 separately assuming carry inputs of 0 and 1 respectively. the two sets of sum and carry outputs produced corresponding to these additions are forwarded as inputs to a multiplexer logic labeled mx1 which consists of nine 2-bit multiplexers to issue the correct sum bits sum15 up to sum8 and the carry output signal c2 using a common select signal, which is the carry output c1 produced by rca_1. likewise, rca_4 and rca_5 are used to add input bits x23 to x16 with corresponding input bits y23 to y16 separately assuming carry inputs of 0 and 1 respectively. the two sets of sum and carry outputs produced corresponding to these additions are forwarded as inputs to a multiplexer logic labeled mx2 which consists of nine 2-bit multiplexers to issue the correct sum bits sum23 up to sum16 and the carry output signal c3 using a common select signal, which is the carry output c2 from mx1. similarly, rca_6 and rca_7 are used to add input bits x31 to x24 with corresponding input bits y31 to y24 separately assuming carry inputs of 0 and 1 respectively. the two sets of sum and carry outputs produced corresponding to these asynchronous monotonic multiplexer 253 additions are forwarded as inputs to a multiplexer logic labeled mx3 which consists of nine 2-bit multiplexers to issue the correct sum bits sum32 up to sum24 using a common select signal, which is the carry output c3 from mx2. fig. 10 asynchronous monotonic full adder (corresponding to rtz handshaking) as illustrated in fig. 9, by maintaining the same rcas, different multiplexers discussed in sections 3 and 4 can be used individually to implement 32-bit cslas, allowing for their performance evaluation. the rcas are efficiently implemented using a monotonic full adder described in [16], shown in fig. 10, which has been designed for rtz handshaking. in fig. 10, (p1, p0) and (q1, q0) represent the full adder’s inputs, while (c1, c0) denotes the carry input. the sum output is denoted as (fs1, fs0), and the carry output is represented by (fc1, fc0). this monotonic full adder is characterized by its early output property. to obtain the logical equivalent of fig. 10 pertaining to rto handshaking, the ao22 complex gates should be replaced by their boolean duals viz. the oa22 complex gates. in [35], an eoqdi full adder was used. compared to this, the full adder of [16] occupies 44.4% less area for both handshake schemes, and hence it was considered for this work. we designed several 32-bit io mode asynchronous cslas utilizing traditional and newly proposed multiplexers individually based on dual-rail encoding, and adhering to rtz and rto handshaking. specifically, one stage of the io mode asynchronous circuit, as shown in fig. 1a, was constructed, including a register set for the adder inputs, a completion detector, and the 32-bit csla functioning as the io mode asynchronous circuit. the design metrics for the 32-bit cslas, incorporating various multiplexers, were evaluated for both rtz and rto handshaking, and they are presented in table 2. the design parameters were determined using synopsys eda tools mentioned earlier, following the same low-leakage 28-nm cmos cell library pvt specification and the methodology followed for the multiplexers. a test bench with over 1000 random inputs was supplied to the cslas at a latency of 10 ns for performing functional simulations and tracking the switching activity. the test benches used for rtz and rto handshaking are logically equivalent. the design metrics estimated for the cslas include forward latency, reverse latency, cycle time (which is the sum of forward and reverse latencies), area, and total power dissipation. 254 p. balasubramanian, n.e. mastorakis table 1 presented the forward latency (since multiplexers were implemented independently) alone and not the cycle time. this was because the completion detector's latency was found to exceed that of certain multiplexers when the multiplexers were implemented as a single io mode asynchronous circuit stage, complicating the performance comparison. however, when the 32-bit csla was implemented as an io mode asynchronous stage, its latency exceeded the completion detector’s latency, enabling accurate performance comparisons of various multiplexers. table 2 presents all three timing parameters (forward latency, reverse latency, and cycle time) highlighting that the latencies in the forward and reverse directions for some io mode asynchronous cslas may be different. this issue has been discussed in previous research [37]. furthermore, different multiplexers impact the csla’s timing in distinct ways. the forward latency of the cslas was directly measured, while the reverse latency was computed based on the respective gate and net delays specified in the timing reports. the cycle time, representing the duration of a single data transaction, was obtained by summing the forward and reverse latencies. table 2 design parameters of asynchronous 32-bit cslas with different multiplexers realized using a 28-nm bulk cmos process. in the table, fl denotes forward latency, rl denotes reverse latency, and ct denotes cycle time. multiplexer used in csla fl (ns) rl (ns) ct (ns) area (µm2) power (µw) corresponding to rtz handshaking dims 2.51 1.80 4.31 2893.94 2279 toms 2.71 2.07 4.78 2701.81 2269 early output qdi 2.14 1.58 3.72 2468.50 2251 sidco 2.53 1.89 4.42 2475.36 2284 sidcao 2.56 2.00 4.56 2482.23 2297 proposed (monotonic) 1.51 0.61 2.12 1768.59 2218 corresponding to rto handshaking dims 2.50 1.78 4.28 2839.04 2264 toms 2.70 2.05 4.75 2701.81 2264 early output qdi 2.12 1.55 3.67 2468.50 2239 sidco 2.52 1.87 4.39 2475.36 2273 sidcao 2.54 1.97 4.51 2482.23 2286 proposed (monotonic) 1.48 0.59 2.07 1768.59 2205 as shown in fig. 9, the forward latency of the cslas is determined by the total propagation delays of rca_1, mx1, mx2, and mx3. within mx1, a delay is introduced by a 2-to-1 multiplexer that is responsible for passing the carry signal to mx2. similarly, in mx2, another 2-to-1 multiplexer introduces a delay as it forwards the carry signal to mx3. in mx3, a final 2-to-1 multiplexer delay occurs, which generates the sum bit. therefore, the forward latency of the csla in fig. 9 can be represented by (7), where dreg stands for the propagation delay of an input register, drca_1 is the delay of the 8-bit rca_1, dfa denotes the propagation delay of a full adder, and dmux21 is the delay of a 2to-1 multiplexer. in (7), the first two terms on the right-hand side are constants, as the same full adder (depicted in fig. 10) was used in all cslas. however, the third term may vary depending on the specific multiplexer employed. flcsla = dreg + drca_1 + (3×dmux21) = dreg + (8×dfa) + (3×dmux21) (7) asynchronous monotonic multiplexer 255 to examine how different multiplexers affect the forward and reverse latencies of cslas, let us focus on rtz handshaking as a test case here. a similar analysis can be conducted for rto handshaking, which we leave to an interested reader. however, we will present the results of the theoretical delay modeling for both rtz and rto handshaking. by substituting the appropriate multiplexer delays into (7), the forward latency of cslas using dims, toms, eoqdi, sidco, sidcao, and the proposed (monotonic) multiplexers are represented by (8), (9), (10), (11), (12), and (13) respectively. these equations serve as approximate latency models, as they omit the delays associated with interconnects and parasitics for simplifying the theoretical analysis. in the equations, dce2 and dao22 represent the typical propagation delays of a 2-input c-element and an ao22 complex gate, while dor2, dor3, and dor4 represent the propagation delays of 2-input, 3input, and 4-input or gates, respectively. flcsla dims = dreg + (8×dfa) + 3×(dce2 + dor4) (8) flcsla toms = dreg + (8×dfa) + 3×(2×dce2 + dor2 + dor3) (9) flcsla eoqdi = dreg + (8×dfa) + 3×(dce2 + dor3) (10) flcsla sidco = dreg + (8×dfa) + 3×(2×dce2 + dor2) (11) flcsla sidcao = dreg + (8×dfa) + (7×dce2 + 3×dor2) (12) flcsla proposed = dreg + (8×dfa) + 3×dao22 (13) the reverse latency can also be theoretically modeled to point out the delay variations across cslas that use different multiplexers. with the inclusion of a monotonic full adder (as shown in fig. 10), the reverse latency of the csla (depicted in fig. 9) using strong indication or eoqdi multiplexers is generally represented by (14). however, the reverse latency expression for the csla utilizing the proposed multiplexer will differ and this will be addressed later in this section. rlcsla = dreg + drca_1 + (3×dmux21) = dreg + dfa + (3×dmux21) (14) by comparing (14) and (7), it becomes evident that the reverse latency is smaller than the forward latency, primarily because only the delay of a single full adder is considered in (14), whereas (7) accounts for the combined delays of eight full adders. this difference arises due to the monotonic full adder, which can be reset early based on the adder inputs, regardless of the carry input. for rtz handshaking, as seen in fig. 10, once the signals p1/p0 and q1/q0, whichever were 1 earlier, transition to the spacer, both the sum (fs1/fs0) and the carry output (fc1/fc0) of the full adder can also assume the spacer state, regardless of whether c1/c0 assumes the spacer. this means that all the full adders in rca_1 through rca_7 can transition to the spacer state at the same time. as a result, when the spacer is applied, the delay of the rca effectively reduces to the delay of just one full adder, as indicated by the second term in (14). since conventional multiplexers contain c-elements in their design, the third term in (14) remains identical to that in (7). therefore, the reverse latency of cslas using dims, toms, eoqdi, sidco, and sidcao multiplexers are given by (15), (16), (17), (18), and (19), respectively. these equations are also approximate models of latency, as they omit the delays associated with interconnects and parasitics for simplicity. 256 p. balasubramanian, n.e. mastorakis rlcsla dims = dreg + dfa + 3×(dce2 + dor4) (15) rlcsla toms = dreg + dfa + 3×(2×dce2 + dor2 + dor3) (16) rlcsla eoqdi = dreg + dfa + 3×(dce2 + dor3) (17) rlcsla sidco = dreg + dfa + 3×(2×dce2 + dor2) (18) rlcsla sidcao = dreg + dfa + (7×dce2 + 3×dor2) (19) the reverse latency of the csla incorporating the proposed multiplexer is theoretically given by (20). similar to (15) through (19), the second term on the right-hand side of (20) represents the delay of a full adder corresponding to rca_1. referring to fig. 6a, since the proposed multiplexer is monotonic, once a1/b1 (whichever was 1 earlier) or a0/b0 (whichever was 1 earlier) transitions to the spacer state, m1/m0 (whichever was 1 earlier) will also transition to the spacer state, regardless of the state of the select signal (s1/s0). it is important to note that (a1, a0) and (b1, b0), which represent the multiplexer inputs, combine the corresponding output pairs of the full adders in rca_2 through rca_7. consequently, all the multiplexers in mx1, mx2, and mx3 can simultaneously transition to the spacer state based on the outputs from rca_2 to rca_7, resulting in a delay that is equivalent to a single multiplexer, as indicated by the third term in (20). rlcsla proposed = dreg + dfa + dao22 (20) equations (8) to (13) and (14) to (20) provide insights into the variations in cycle time of cslas that incorporate different multiplexers. by substituting the average propagation delays of the gates from the cell library [33] into these equations, we calculated the theoretical cycle time for cslas utilizing various multiplexers, specifically for rtz handshaking. for cslas corresponding to rto handshaking, we calculated the cycle time after considering the dual versions of the gates described in (8) to (13) and (15) to (20), excluding the c-element. to normalize the theoretical cycle time, we divided the cycle time of each csla by the maximum cycle time within the group, doing so separately for both rtz and rto handshaking. a similar normalization procedure was applied to the practical cycle times of cslas, using the estimates provided in table 2 for rtz and rto handshaking. figs. 11a and 11b portray a comparison between the theoretical and practical (normalized) cycle times of cslas incorporating different multiplexers based on rtz and rto handshaking, respectively. figs. 11a and b demonstrate that while there are noticeable variations between the theoretical and practical cycle times for certain cslas, primarily due to the simplified theoretical delay models, a strong correlation is seen between the theoretical and practical delays. this validates the accuracy of our theoretical delay modeling. additionally, figs. 11a and b show that the csla utilizing the proposed monotonic multiplexer achieves a substantial reduction in cycle time when compared to those using strong indication or eoqdi multiplexers. as shown in table 2, while the csla with the eoqdi multiplexer has a lower cycle time than the one comprising the strong indication multiplexer, the csla employing the monotonic multiplexer achieves a 43% (43.6%) reduction in cycle time relative to the csla incorporating the eoqdi multiplexer for rtz (rto) handshaking. asynchronous monotonic multiplexer 257 fig. 11 comparison of the theoretical and practical (normalized) cycle time of cslas incorporating different multiplexers corresponding to the handshake schemes: (a) rtz and (b) rto because the same full adder (shown in fig. 10) was utilized in constructing the cslas, and both the input registers and the completion detector external to the csla remain unchanged, the area variations between the cslas listed in table 2 are solely due to the differences in the areas of the multiplexers present in the cslas. fig. 12 depicts the areas of various multiplexers for rtz and rto handshaking protocols. the area occupied by several multiplexers is observed to be identical for both rtz and rto handshaking. this similarity arises from the fact that certain gate pairs in the digital cell library [33] have equivalent areas – such as 2-input and 3-input or gates having the same area as 2-input and 2-input and gates for a normal drive strength. additionally, ao22 and oa22 complex gates with normal drive strength have identical areas. this explains why, in table 2, many cslas have the same areas for both handshaking types. 258 p. balasubramanian, n.e. mastorakis fig. 12 area (in µm2) of different multiplexers corresponding to the handshake schemes: (a) rtz and (b) rto compared to strong indication and eoqdi multiplexers illustrated in figs. 2 through 5, the proposed monotonic multiplexer in fig. 6 requires significantly fewer gates and logic components, resulting in a much smaller area, as seen in fig. 12. specifically, the proposed multiplexer occupies 83.6% less area than the eoqdi multiplexer, and the csla with the proposed multiplexer occupies 28.4% less area compared to the csla with the eoqdi multiplexer. however, despite this reduction in area, the power dissipation difference between the two cslas is rather minimal, with only a 1.5% decrease for rtz and rto handshaking. the reason for this shall be explained next. as observed in table 2, the variation in power dissipation across various cslas is not much. this is due to the design of the multiplexers and full adders within the cslas, which adhere to the monotonic cover constraint. as explained in section 3.1, the monotonic cover constraint activates a single, unique signal path from a primary input to a primary output, reducing unnecessary switching and signal transitions in io mode asynchronous circuits, thus minimizing power variation between logically similar but structurally distinct cslas. minor differences in power do exist, and this is due to the differences in multiplexers' logic. the power dissipation of input registers, the completion detector, and full adders remain almost the same since they are shared across all cslas. these elements contain more logic than the multiplexers in the csla, which causes them to dominate the total power dissipation. consequently, the variation in power dissipation among different cslas in table 2 is rather minor. in contrast, table 1 revealed a noticeable variation in power dissipation, as it focused specifically on the design metrics of individual multiplexers. the overall conclusion from table 2 is that the csla with the proposed multiplexer significantly reduced both cycle time and area compared to traditional multiplexers, without an increase in power dissipation. this implies the proposed multiplexer enables more optimization when considering all the design metrics together. furthermore, table 2 shows that the proposed multiplexer when used for rto handshaking enables a slight decrease in both cycle time and power when used for rtz handshaking, and this is due to differences in the gate types corresponding to the handshake schemes. in synchronous design, the power and delay product commonly serves as a figure of merit for low-power or low-energy evaluation [38]. the equivalent metric in io mode asynchronous design is the power and cycle time product (pctp). hence, we computed asynchronous monotonic multiplexer 259 the pctp for each csla, using the design metrics listed in table 2 for both rtz and rto handshaking. the calculated pctps were then normalized by dividing them by the highest pctp for rtz and rto handshaking separately. the normalized pctps corresponding to rtz and rto handshake schemes are presented in figs. 13a and 13b, respectively. as seen in fig. 13, the csla with the proposed multiplexer has a substantially lower pctp compared to cslas using other multiplexers. specifically, the csla with the proposed multiplexer achieves a 43.9% (44.5%) reduction in pctp for rtz (rto) handshaking compared to the csla featuring the eoqdi multiplexer. fig. 13 normalized pctp of cslas incorporating different multiplexers corresponding to the handshake schemes: (a) rtz and (b) rto an optimized io mode asynchronous csla was presented in [35], which utilized the eoqdi full adder of [36] and the sidco multiplexer of [32]. we implemented this csla as well and estimated its design metrics for the two handshake schemes, given below. these metrics were estimated by following the same design methodology discussed previously. ▪ rtz handshaking: forward latency = reverse latency = 2.54 ns, and cycle time = 5.08 ns; area = 3158.50 µm2; power = 2444 µw ▪ rto handshaking: forward latency = reverse latency = 2.50 ns, and cycle time = 5 ns; area = 3158.50 µm2; power = 2438 µw 260 p. balasubramanian, n.e. mastorakis compared to these design parameters, the csla realized using the monotonic full adder of [16] and the proposed monotonic multiplexer achieved the following reductions in design metrics: (i) 58.3% less cycle time, 44% less area, 9.2% less power, and 62.1% less pctp for rtz handshaking, and (ii) 58.6% less cycle time, 44% less area, 9.6% less power, and 62.6% less pctp for rto handshaking. 6. conclusion this article introduced a new io mode multiplexer design that falls under the monotonic class. the proposed multiplexer is notable for its gate-level efficiency, requiring only ten transistors for a static cmos implementation. compared to an existing optimized eoqdi multiplexer, the proposed monotonic multiplexer demonstrates a latency reduction of 67% (69%), an area reduction of 84% (84%), and a power reduction of 66% (67%) for rtz (rto) handshaking, based on implementation a 28-nm cmos technology. since the multiplexer is a relatively small component, its performance is best evaluated in a broader circuit context. to do this, we incorporated conventional multiplexers and the proposed multiplexer individually into io mode asynchronous 32-bit cslas, keeping the compute element (the full adder) consistent. the performance evaluation revealed that the csla utilizing the proposed multiplexer achieves a 43% (44%) reduction in cycle time, a 28% (28%) reduction in area, and a 44% (45%) reduction in pctp compared to the csla with an eoqdi multiplexer for rtz (rto) handshaking. references [1] j. sparsø and s. b. furber, principles of asynchronous circuit design: a systems perspective. dordrecht: kluwer academic publishers, 2001. [2] s. m. nowick and m. singh, "asynchronous design – part 1: overview and recent advances", ieee design & test, vol. 32, pp. 5-18, june 2015. [3] c. h. van berkel, m. b. josephs and s. m. nowick, "applications of asynchronous circuits", proc. ieee, vol. 87, pp. 223-233, feb. 1999. [4] a. j. martin and m. nystrom, "asynchronous techniques for system-on-chip design", proc. ieee, vol. 94, pp. 1089-1120, june 2006. [5] i. david, r. ginosar and m. yoeli, "self-timed is self-checking", j. electron. test.: theory appl., vol. 6, pp. 219-228, apr. 1995. [6] g. f. bouesse, g. sicard, a. baixas and m. renaudin, "quasi delay insensitive asynchronous circuits for low emi", in proceedings of the 4th international workshop on electromagnetic compatibility of integrated circuits, 2004, pp. 27-31. [7] z. yu, s. b. furber and l. a. plana, "an investigation into the security of self-timed circuits", in proceedings of the 9th international symposium on advanced research in asynchronous circuits and systems, 2003, pp. 206-215. [8] l. a. plana, p. a. riocreux, w. j. bainbridge, a. bardsley, s. temple, j. d. garside and z. c. yu, "spa – a secure amulet core for smartcard applications", microprocess. microsyst., vol. 27, pp. 431-446, oct. 2003. [9] a. j. martin, "the limitation to delay-insensitivity in asynchronous circuits" in beauty is our business; texts and monographs in computer science; feijen, w.h.j., van gasteren, a.j.m., gries, d., misra, j., eds.; springer: new york, usa, 1990. [10] a. j. martin and p. prakash, "asynchronous nano-electronics: preliminary investigation", in proceedings of the 14th ieee international symposium on asynchronous circuits and systems, 2008, pp. 58-68. [11] c. l. seitz, "system timing" in introduction to vlsi systems; mead, c., conway, l., eds.; addisonwesley: reading, ma, usa, 1980. asynchronous monotonic multiplexer 261 [12] c. brej, early output logic and anti-tokens. ph.d. thesis, the university of manchester, uk, september 2005. [13] k. s. stevens, r. ginosar and s. rotem, "relative timing", ieee trans. vlsi syst., vol. 11, pp. 129140, feb. 2003. [14] j. cortadella, a. kondratyev, l. lavagno and c. sotiriou, "coping with the variability of combinational logic delays", in proceedings of the ieee international conference on computer design, 2004, pp. 1-4. [15] v. i. varshavsky, "aperiodic circuits", in self-timed control of concurrent processes: the design of aperiodic logical circuits in computers and discrete systems; varshavsky, v.i., (ed.), (translated from the russian by a.v. yakovlev), kluwer academic publishers: new york, usa, 1990. [16] p. balasubramanian and w. liu, "high-speed and energy-efficient asynchronous carry look-ahead adder", plos one, vol. 18, p. e0289569, oct. 2023. [17] p. balasubramanian and n.e. mastorakis, "speed, power and area optimized monotonic asynchronous array multipliers", j. low power electron. appl., vol. 14, p. 1, jan. 2024. [18] d. e. muller and s. bartky, "a theory of asynchronous circuits", in proceedings of the international symposium on the theory of switching (part i), 1957, pp. 204-243. [19] p. a. beerel, r. o. ozdag and m. a. ferretti, a designer’s guide to asynchronous vlsi, cambridge: cambridge university press, 2010. [20] m. shams, j. c. ebergen and m. i. elmasry, "a comparison of cmos implementations of an asynchronous circuits primitive: the c-element", in proceedings of the international symposium on low power electronics and design, 1996, pp. 93-96. [21] l. s. heck, m. t. moreira and n. l. v. calazans, "hardening c-elements against metastability", in proceedings of the 24th ieee international conference on electronics, circuits and systems, 2017, pp. 314-317. [22] t. verhoeff, "delay-insensitive codes – an overview", distrib. comput., vol. 3, pp. 1-8, mar. 1988. [23] b. bose, "on unordered codes", ieee trans. comput., vol. 40, pp. 125-131, feb. 1991. [24] m. t. moreira, r. a. guazzelli and n. l. v. calazans, "return-to-one protocol for reducing static power in c-elements of qdi circuits employing m-of-n codes", in proceedings of the 25th symposium on integrated circuits and systems design, 2012, pp. 1-6. [25] j. sparsø and j. staunstrup, "delay-insensitive multi-ring structures", integr. vlsi j., vol. 15, pp. 313-340, oct. 1993. [26] t. sasao, switching theory for logic synthesis, dordrecht: kluwer academic publishers, 1999. [27] p. balasubramanian, "comparative evaluation of quasi-delay-insensitive asynchronous adders corresponding to return-to-zero and return-to-one handshaking", fu: elec. ener., vol. 31, no. 1, pp. 25-39, 2018. [28] w. b. toms, synthesis of quasi-delay-insensitive datapath circuits, ph.d. thesis, the university of manchester, uk, february 2006. [29] w. b. toms and d. a. edwards, "indicating combinational logic decomposition", iet comput. digit. tech., vol. 5, pp. 331-341, july 2011. [30] r. k. brayton, g. d. hachtel, c. t. mcmullen and a. l. sangiovanni-vincentelli, logic minimization algorithms for vlsi synthesis, springer: new york, 1984. [31] r. rudell, logic synthesis for vlsi design, ph.d. thesis, university of california, berkeley, usa, 1989. [32] p. balasubramanian and d.a. edwards, "power, delay and area efficient self-timed multiplexer and demultiplexer designs", in proceedings of the 4th international conference on design & technology of integrated systems in nanoscale era, 2009, pp. 173-178. [33] synopsys databook, synopsys saed_edk32/28_core databook, revision 1.0.0. january 2012. [34] o. j. bedrij, "carry-select adder", ire trans. electron. comput., vol. ec-11, pp. 340-346, june 1962. [35] p. balasubramanian, "asynchronous carry select adders", eng. sci. technol. int. j., vol. 20, pp. 1066-1074, june 2017. [36] p. balasubramanian, "a robust asynchronous early output full adder", wseas trans. circ. syst., vol. 10, pp. 221-230, july 2011. [37] p. balasubramanian and s. yamashita, "area/latency optimized early output asynchronous full adders and relative-timed ripple carry adders”, springerplus, vol. 5, p. 440, apr. 2016. [38] j. m. rabaey, a. chandrakasan and b. nikolić, digital integrated circuits: a design perspective, 2nd ed.; london: pearson education, 2003. facta universitatis series: electronics and energetics vol. x, no x, x 2018, pp. x energy-efficient cryptographic primitives elena dubrova∗ royal institute of technology (kth), stockholm, sweden abstract: our society greatly depends on services and applications provided by mobile communication networks. as billions of people and devices become connected, it becomes increasingly important to guarantee security of interactions of all players. in this talk we address several aspects of this important, many-folded problem. first, we show how to design cryptographic primitives which can assure integrity and confidentiality of transmitted messages while satisfying resource constrains of low-end low-cost wireless devices such as sensors or rfid tags. second, we describe countermeasures which can enhance the resistance of hardware implementing cryptographic algorithms to hardware trojans. keywords: security, lightweight cryptography, cryptographic primitive, encryption, message authentication, hardware trojan. 1 introduction today minimal or no security is typically provided to low-end low-cost wireless devices such as sensors or rfid tags in the conventional belief that the information they gather is of little concern to attackers. however, case studies have shown that a compromised sensor can be used as a stepping stone to mount an attack on a wireless network. for example, in the attack manuscript received x x, x corresponding author: elena dubrova royal institute of technology (kth), stockholm, sweden (e-mail: dubrova@kth.se) ∗an earlier version of this paper was presented as an invited address at the reed-muller 2017 workshop, novi sad, serbia, may 24-25, 2017. 1 facta universitatis series: electronics and energetics vol. xx, no x, xxxx, pp. xxx xxx enumeration and coding methods for a class of permutations and reversible logical gates costas karanikas1 and nikolaos atreas2 1 school of informatics, aristotle university of thessaloniki, greece 2 school of electrical and computer engineering, faculty of engineering, aristotle university of thessaloniki, greece abstract: we introduce a great variety of coding methods for boolean sparse invertible matrices and we use these methods to create a variety of bijections on the permutation group p (m) of the set {1, 2, ...,m}. also, we propose methods for coding, enumerating and shuffling the set {0, ..., 2m − 1}, i.e. the set of all m-bit binary arrays. moreover we show that several well known reversible logic gates/circuits (on m-bit binary arrays) can be coded by sparse matrices. keywords: permutations, reversible logical gates. 1 introduction let m ≥ 2 be a natural number and p (m) be the group of permutations of the set {1, ...,m}. in this work we introduce a variety of shuffling methods. more precisely, each shuffling method is a bijective map of a set onto itself, i.e. different inputs yield different outputs and the number of inputs and outputs are equal. manuscript received xx, xxxx corresponding author: nikolaos atreas school of electrical and computer engineering, faculty of engineering, aristotle university of thessaloniki, greece (e-mail: natreas@ece.auth.gr) an earlier version of this paper was presented as an invited address at the reed-muller 2017 workshop, novi sad, serbia, may 24-25, 2017 1 2 n. atreas and c. karanikas our main theorem 2 in section 3 or its ”binary” version (see theorem 3 in section 4), states that any pair (ρ, s) of permutations in p (m) determines a bijective map tρ,s : {0, 1, ...., 2m − 1} → {0, 1, ...., 2m − 1}. since every non negative integer n ∈ {0, 1, ...., 2m − 1} can be expressed either as an m-bit binary array en = ( ε0(n), ε1(n), ..., εm−1(n) ) , εj ∈ {0, 1}, or by its dyadic expansion n = m∑ j=1 εj(n)2 j−1, the above map tρ,s can be considered as a reversible map on the set of all m-bit binary arrays. in a different terminology, we can say that in theorem 3 we introduce reversible logic gates, i.e bijective maps on the set of m-bit binary arrays, (see [1]). an example of a reversible gate is the not gate, whereas the and, or, xor gates are irreversible (not reversible), because they map 4 = 22 input states into 2 = 21 output states, so information is lost in the merging of paths. a second target of this work is to enumerate and code permutations in p (m) of large length (note that the cardinality of the set p (m) is m!). therefore, a reversible map tρ,s associated with the pair (ρ, s) can be coded either by the pair (ρ, s) or by an enumeration of p (m)×p (m) as in section 2. this coding method is associated with a particular class of sparse boolean invertible matrices introduced in [2] (see also [3–6]). notice that sparse matrices are very useful for fast processing/transmission of data and they have been effectively used in [6] for detecting specific characteristics on finite data. the paper is organized in the following sections: in section 2 we introduce our main tool, the invertible map p (m) → s(m) (see (2) and (3)) and in proposition 1, we see that this map induces the lexicographic order of the enumeration of p (m). moreover we consider the cartesian product r(m) = p (1)×p (2)× ...×p (m) of permutations to show in theorem 1 that each fixed element of r(m) provides an enumeration of p (m). in section 3 we define a class of sparse m×m boolean invertible matrices zm identified by a pair (ρ, s) ∈ p (m)×s(m) and we use this class of matrices facta universitatis series: electronics and energetics vol. 31, no 2, june 2018, pp. 241 255 https://doi.org/10.2298/fuee1802241k costas karanikas1, nikolaos atreas2 received october 22, 2017; received in revised form january 24, 2018 corresponding author: nikolaos atreas school of electrical and computer engineering, dpt of telecommunications, faculty of engineering, aristotle university of thessaloniki, 54124, thessaloniki, greece (e-mail: natreas@auth.gr) *an earlier version of this paper was presented as an invited address at the reed-muller 2017 workshop, novi sad, serbia, may 24-25, 2017 facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications tomislav suligoj1, marko koričić1, josip žilak1, hidenori mochizuki2, so-ichi morita2, katsumi shinomura2, hisaya imai2 1university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 9, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) enumeration and coding methods for a class of permutations and reversible logical gates* 1school of informatics, aristotle university of thessaloniki, greece 2school of electrical and computer engineering, faculty of engineering, aristotle university of thessaloniki, greece abstract. we introduce a great variety of coding methods for boolean sparse invertible matrices and we use these methods to create a variety of bijections on the permutation group p(m) of the set {1,2,...,m}. also, we propose methods for coding, enumerating and shuffling the set{0,...,2m−1}, i.e. the set of all m-bit binary arrays. moreover we show that several well known reversible logic gates/circuits (on m-bit binary arrays) can be coded by sparse matrices. key words: permutations, reversible logical gates. 2 n. atreas and c. karanikas our main theorem 2 in section 3 or its ”binary” version (see theorem 3 in section 4), states that any pair (ρ, s) of permutations in p (m) determines a bijective map tρ,s : {0, 1, ...., 2m − 1} → {0, 1, ...., 2m − 1}. since every non negative integer n ∈ {0, 1, ...., 2m − 1} can be expressed either as an m-bit binary array en = ( ε0(n), ε1(n), ..., εm−1(n) ) , εj ∈ {0, 1}, or by its dyadic expansion n = m∑ j=1 εj(n)2 j−1, the above map tρ,s can be considered as a reversible map on the set of all m-bit binary arrays. in a different terminology, we can say that in theorem 3 we introduce reversible logic gates, i.e bijective maps on the set of m-bit binary arrays, (see [1]). an example of a reversible gate is the not gate, whereas the and, or, xor gates are irreversible (not reversible), because they map 4 = 22 input states into 2 = 21 output states, so information is lost in the merging of paths. a second target of this work is to enumerate and code permutations in p (m) of large length (note that the cardinality of the set p (m) is m!). therefore, a reversible map tρ,s associated with the pair (ρ, s) can be coded either by the pair (ρ, s) or by an enumeration of p (m)×p (m) as in section 2. this coding method is associated with a particular class of sparse boolean invertible matrices introduced in [2] (see also [3–6]). notice that sparse matrices are very useful for fast processing/transmission of data and they have been effectively used in [6] for detecting specific characteristics on finite data. the paper is organized in the following sections: in section 2 we introduce our main tool, the invertible map p (m) → s(m) (see (2) and (3)) and in proposition 1, we see that this map induces the lexicographic order of the enumeration of p (m). moreover we consider the cartesian product r(m) = p (1)×p (2)× ...×p (m) of permutations to show in theorem 1 that each fixed element of r(m) provides an enumeration of p (m). in section 3 we define a class of sparse m×m boolean invertible matrices zm identified by a pair (ρ, s) ∈ p (m)×s(m) and we use this class of matrices enumeration and coding permutations and reversible logical circuits 3 to produce a class of non-linear bijection maps tq,ρ,s : {0, ..., qm − 1} → {0, ..., qm − 1}, see our main theorem 2. in section 4 we show that any triple (ρ, s, τ) of permutations in p (m) provides a variety of maps from {0, ..., 2m − 1} onto {0, ..., 2m − 1} and we see that several reversible logic gates can be determined by this triple. finally, in section 5 we apply theorems 1 and 2, to see with an example that for any pair (ρ, s) ∈ p (m) × s(m) and any fixed r ∈ r(2m) we shuffle the elements of the set {0, ..., 2m−1} and we discus the random permutation generation problem. 2 enumeration methods for p (m) let m ≥ 2 be a natural number. first we review the lexicographical order of the set s(m) = { s = (s1, ..., sm) : si ∈ {1, 2, ..., i} } . (1) obviously, the map u : s(m) → {0, ...,m!− 1} : u(s) = m! m∑ i=1 si − 1 i! (2) is a bijection and the elements si ∈ {1, ..., i} can be thought of digits of the number u(s) with respect to the factorial number system. inversely, for any n ∈ {0, ...,m!− 1}, its digits si(n), i = 1, ...,m are computed by the formula si(n) = mod ([n i! m! ] , i ) + 1 describing the inverse map u−1. here, [x] is the floor of x. from now on we say that u provides the lexicographical order of s(m). using the lexicographical order of s(m) we may obtain an enumeration of the group of permutations p (m) of the set {1, ...,m} as well. in fact, let us define the map q : p (m) → s(m) : q(ρ) = s = (s1, ..., sm), (3) where each element si ∈ s(m) is defined by using the following iteration scheme: 242 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 243 2 n. atreas and c. karanikas our main theorem 2 in section 3 or its ”binary” version (see theorem 3 in section 4), states that any pair (ρ, s) of permutations in p (m) determines a bijective map tρ,s : {0, 1, ...., 2m − 1} → {0, 1, ...., 2m − 1}. since every non negative integer n ∈ {0, 1, ...., 2m − 1} can be expressed either as an m-bit binary array en = ( ε0(n), ε1(n), ..., εm−1(n) ) , εj ∈ {0, 1}, or by its dyadic expansion n = m∑ j=1 εj(n)2 j−1, the above map tρ,s can be considered as a reversible map on the set of all m-bit binary arrays. in a different terminology, we can say that in theorem 3 we introduce reversible logic gates, i.e bijective maps on the set of m-bit binary arrays, (see [1]). an example of a reversible gate is the not gate, whereas the and, or, xor gates are irreversible (not reversible), because they map 4 = 22 input states into 2 = 21 output states, so information is lost in the merging of paths. a second target of this work is to enumerate and code permutations in p (m) of large length (note that the cardinality of the set p (m) is m!). therefore, a reversible map tρ,s associated with the pair (ρ, s) can be coded either by the pair (ρ, s) or by an enumeration of p (m)×p (m) as in section 2. this coding method is associated with a particular class of sparse boolean invertible matrices introduced in [2] (see also [3–6]). notice that sparse matrices are very useful for fast processing/transmission of data and they have been effectively used in [6] for detecting specific characteristics on finite data. the paper is organized in the following sections: in section 2 we introduce our main tool, the invertible map p (m) → s(m) (see (2) and (3)) and in proposition 1, we see that this map induces the lexicographic order of the enumeration of p (m). moreover we consider the cartesian product r(m) = p (1)×p (2)× ...×p (m) of permutations to show in theorem 1 that each fixed element of r(m) provides an enumeration of p (m). in section 3 we define a class of sparse m×m boolean invertible matrices zm identified by a pair (ρ, s) ∈ p (m)×s(m) and we use this class of matrices enumeration and coding permutations and reversible logical circuits 3 to produce a class of non-linear bijection maps tq,ρ,s : {0, ..., qm − 1} → {0, ..., qm − 1}, see our main theorem 2. in section 4 we show that any triple (ρ, s, τ) of permutations in p (m) provides a variety of maps from {0, ..., 2m − 1} onto {0, ..., 2m − 1} and we see that several reversible logic gates can be determined by this triple. finally, in section 5 we apply theorems 1 and 2, to see with an example that for any pair (ρ, s) ∈ p (m) × s(m) and any fixed r ∈ r(2m) we shuffle the elements of the set {0, ..., 2m−1} and we discus the random permutation generation problem. 2 enumeration methods for p (m) let m ≥ 2 be a natural number. first we review the lexicographical order of the set s(m) = { s = (s1, ..., sm) : si ∈ {1, 2, ..., i} } . (1) obviously, the map u : s(m) → {0, ...,m!− 1} : u(s) = m! m∑ i=1 si − 1 i! (2) is a bijection and the elements si ∈ {1, ..., i} can be thought of digits of the number u(s) with respect to the factorial number system. inversely, for any n ∈ {0, ...,m!− 1}, its digits si(n), i = 1, ...,m are computed by the formula si(n) = mod ([n i! m! ] , i ) + 1 describing the inverse map u−1. here, [x] is the floor of x. from now on we say that u provides the lexicographical order of s(m). using the lexicographical order of s(m) we may obtain an enumeration of the group of permutations p (m) of the set {1, ...,m} as well. in fact, let us define the map q : p (m) → s(m) : q(ρ) = s = (s1, ..., sm), (3) where each element si ∈ s(m) is defined by using the following iteration scheme: enumeration and coding permutations and reversible logical circuits 3 to produce a class of non-linear bijection maps tq,ρ,s : {0, ..., qm − 1} → {0, ..., qm − 1}, see our main theorem 2. in section 4 we show that any triple (ρ, s, τ) of permutations in p (m) provides a variety of maps from {0, ..., 2m − 1} onto {0, ..., 2m − 1} and we see that several reversible logic gates can be determined by this triple. finally, in section 5 we apply theorems 1 and 2, to see with an example that for any pair (ρ, s) ∈ p (m) × s(m) and any fixed r ∈ r(2m) we shuffle the elements of the set {0, ..., 2m−1} and we discus the random permutation generation problem. 2 enumeration methods for p (m) let m ≥ 2 be a natural number. first we review the lexicographical order of the set s(m) = { s = (s1, ..., sm) : si ∈ {1, 2, ..., i} } . (1) obviously, the map u : s(m) → {0, ...,m!− 1} : u(s) = m! m∑ i=1 si − 1 i! (2) is a bijection and the elements si ∈ {1, ..., i} can be thought of digits of the number u(s) with respect to the factorial number system. inversely, for any n ∈ {0, ...,m!− 1}, its digits si(n), i = 1, ...,m are computed by the formula si(n) = mod ([n i! m! ] , i ) + 1 describing the inverse map u−1. here, [x] is the floor of x. from now on we say that u provides the lexicographical order of s(m). using the lexicographical order of s(m) we may obtain an enumeration of the group of permutations p (m) of the set {1, ...,m} as well. in fact, let us define the map q : p (m) → s(m) : q(ρ) = s = (s1, ..., sm), (3) where each element si ∈ s(m) is defined by using the following iteration scheme: 4 n. atreas and c. karanikas for the above selection of m and the initial permutation ρ in (3), we store the position of the biggest element in ρ, i.e. we define sm = ρ−1(m) and at the same time we delete this element ρ(sm) = m from ρ and so we form a new permutation ρ(m−1) ∈ p (m− 1) by ρ(m−1)(j) = { ρ(j) if j < sm ρ(j + 1) if j ≥ sm , j = 1, ...,m− 1. then we follow the previous step for the permutation ρ(m−1), i.e. we store the position of its biggest element by defining sm−1 = ρ−1 (m−1)(m− 1) and at the same time we delete the element m− 1 from ρ(m−1) and we form a new permutation ρ(m−2) ∈ p (m− 2) by ρ(m−2)(j) = { ρ(m−1)(j) if j < sm−1 ρ(m−1)(j + 1) if j ≥ sm−1 , j = 1, ...,m− 2. we continue in the same spirit until s is completely determined. example 1 let ρ = (2, 3, 4, 1). in order to determine the set s = {s1, s2, s3, s4} in (3) we are based on the above iteration scheme and so we proceed in the following way: (i) define s4 = ρ−1(4) = 3 and ρ(3) = (2, 3, 1). (ii) define s3 = ρ−1 (3)(3) = 2 and ρ(2) = (2, 1). (iii) define s2 = ρ−1 (2)(2) = 1 and ρ(1) = (1). (iv) define s1 = ρ−1 (1)(1) = 1 and ρ(4) = ∅. now we have the following: proposition 1 [2] let u and q be two maps as in (2) and (3) respectively. then q is a bijection and so the composition map uq : p (m) → {0, ...,m!− 1} provides an enumeration of p (m). 242 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 243 4 n. atreas and c. karanikas for the above selection of m and the initial permutation ρ in (3), we store the position of the biggest element in ρ, i.e. we define sm = ρ−1(m) and at the same time we delete this element ρ(sm) = m from ρ and so we form a new permutation ρ(m−1) ∈ p (m− 1) by ρ(m−1)(j) = { ρ(j) if j < sm ρ(j + 1) if j ≥ sm , j = 1, ...,m− 1. then we follow the previous step for the permutation ρ(m−1), i.e. we store the position of its biggest element by defining sm−1 = ρ−1 (m−1)(m− 1) and at the same time we delete the element m− 1 from ρ(m−1) and we form a new permutation ρ(m−2) ∈ p (m− 2) by ρ(m−2)(j) = { ρ(m−1)(j) if j < sm−1 ρ(m−1)(j + 1) if j ≥ sm−1 , j = 1, ...,m− 2. we continue in the same spirit until s is completely determined. example 1 let ρ = (2, 3, 4, 1). in order to determine the set s = {s1, s2, s3, s4} in (3) we are based on the above iteration scheme and so we proceed in the following way: (i) define s4 = ρ−1(4) = 3 and ρ(3) = (2, 3, 1). (ii) define s3 = ρ−1 (3)(3) = 2 and ρ(2) = (2, 1). (iii) define s2 = ρ−1 (2)(2) = 1 and ρ(1) = (1). (iv) define s1 = ρ−1 (1)(1) = 1 and ρ(4) = ∅. now we have the following: proposition 1 [2] let u and q be two maps as in (2) and (3) respectively. then q is a bijection and so the composition map uq : p (m) → {0, ...,m!− 1} provides an enumeration of p (m). 244 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 245 4 n. atreas and c. karanikas for the above selection of m and the initial permutation ρ in (3), we store the position of the biggest element in ρ, i.e. we define sm = ρ−1(m) and at the same time we delete this element ρ(sm) = m from ρ and so we form a new permutation ρ(m−1) ∈ p (m− 1) by ρ(m−1)(j) = { ρ(j) if j < sm ρ(j + 1) if j ≥ sm , j = 1, ...,m− 1. then we follow the previous step for the permutation ρ(m−1), i.e. we store the position of its biggest element by defining sm−1 = ρ−1 (m−1)(m− 1) and at the same time we delete the element m− 1 from ρ(m−1) and we form a new permutation ρ(m−2) ∈ p (m− 2) by ρ(m−2)(j) = { ρ(m−1)(j) if j < sm−1 ρ(m−1)(j + 1) if j ≥ sm−1 , j = 1, ...,m− 2. we continue in the same spirit until s is completely determined. example 1 let ρ = (2, 3, 4, 1). in order to determine the set s = {s1, s2, s3, s4} in (3) we are based on the above iteration scheme and so we proceed in the following way: (i) define s4 = ρ−1(4) = 3 and ρ(3) = (2, 3, 1). (ii) define s3 = ρ−1 (3)(3) = 2 and ρ(2) = (2, 1). (iii) define s2 = ρ−1 (2)(2) = 1 and ρ(1) = (1). (iv) define s1 = ρ−1 (1)(1) = 1 and ρ(4) = ∅. now we have the following: proposition 1 [2] let u and q be two maps as in (2) and (3) respectively. then q is a bijection and so the composition map uq : p (m) → {0, ...,m!− 1} provides an enumeration of p (m). enumeration and coding permutations and reversible logical circuits 5 example 2 for m = 4, we demonstrate the enumeration of the elements of p (4) derived from proposition (1) and the lexicographical order of the elements of s(4) derived from (2). p (4) = {(4, 3, 2, 1), (3, 4, 2, 1), (3, 2, 4, 1), (3, 2, 1, 4), (4, 2, 3, 1), (2, 4, 3, 1), (2, 3, 4, 1), (2, 3, 1, 4), (4, 2, 1, 3), (2, 4, 1, 3), (2, 1, 4, 3), (2, 1, 3, 4), (4, 3, 1, 2), (3, 4, 1, 2), (3, 1, 4, 2), (3, 1, 2, 4), (4, 1, 3, 2), (1, 4, 3, 2), (1, 3, 4, 2), (1, 3, 2, 4), (4, 1, 2, 3), (1, 4, 2, 3), (1, 2, 4, 3), (1, 2, 3, 4)}. s(4) = {(1, 1, 1, 1), (1, 1, 1, 2), (1, 1, 1, 3), (1, 1, 1, 4), (1, 1, 2, 1), (1, 1, 2, 2), (1, 1, 2, 3), (1, 1, 2, 4), (1, 1, 3, 1), (1, 1, 3, 2), (1, 1, 3, 3), (1, 1, 3, 4), (1, 2, 1, 1), (1, 2, 1, 2), (1, 2, 1, 3), (1, 2, 1, 4), (1, 2, 2, 1), (1, 2, 2, 2), (1, 2, 2, 3), (1, 2, 2, 4), (1, 2, 3, 1), (1, 2, 3, 2), (1, 2, 3, 3), (1, 2, 3, 4)}. for instance, the permutation ρ = (4, 3, 2, 1) is uniquely associated with the set q(ρ) = (1, 1, 1, 1) (apply example 1) and then uq(ρ) = 0 by (2). in the same spirit, the permutation ρ = (3, 4, 2, 1) is uniquely associated with the set q(ρ) = (1, 1, 1, 2) (apply example 1) and then uq(ρ) = 1 by (2). remark 1 the set s(m) in (1) seems to be similar with a lehmer code [7], but our approach seems to be more efficient for the purpose of obtaining a great variety of enumerating methods for p (m), see theorem (1) below. we notice that the lehmer code of a permutation ρ = (ρ1, ....ρm) is a sequence of natural numbers (l1, ..., lm) such that li is the number of all elements ρ1, ..., ρi−1 which are less than ρi, i = 1, ...,m. 244 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 245 6 n. atreas and c. karanikas we may obtain various enumerations of the elements of s(m) (and hence p (m) as well). indeed, let us fix any element r = (r1, r2, ..., rm) ∈ r(m) = p (1)× p (2)× ...× p (m), (4) where ri = (ri,1, ...ri,i) ∈ p (i), i = 1, ...,m. then we have: theorem 1 let s(m) be defined in (1) and r be a fixed element of r(m) as in (4). for any s ∈ s(m) we define wr,m(s) = (r1,s1 , r2,s2 , ..., rm,sm) then the map wr,m is onto s(m). proof: let us fix an element r ∈ r(m). since ri,si ≤ i (due to the fact that ri ∈ p (i)), we deduce that wr,m(s) ∈ s(m). also, the fact that ri,j ≤ i for any j = 1, ..., i implies that wr,m is onto s(m), because any element si of s = (s1, ..., sm) can be written by si = ri,a(i) for some index a(i) ≤ i and so by defining a = {a(i) : i = 1, ...,m} we have wr,m(a) = s. let u be as in (2) and wr,m be as in theorem 1. it is easy to see that the map uwr,mu−1 : {0, ...,m!− 1} → {0, ...,m!− 1} provides a method for shuffling the set {0, ...,m! − 1}. by altering the selection of r ∈ r(m) in (4) we obtain a different shuffling. finally, it is clear that the class of mappings { qwr,mu−1 : r ∈ r(m) } provides a great variety of enumeration/shuffling methods for the set of permutations p (m). example 3 for m = 4 and r = {(1), (2, 1), (2, 1, 3), (4, 2, 1, 3)}, then by using theorem 1, the lexicographical order of s(4) (see example 2) is shuffled to: {(1, 2, 2, 4), (1, 2, 2, 2), (1, 2, 2, 1), (1, 2, 2, 3), (1, 2, 1, 4), (1, 2, 1, 2), (1, 2, 1, 1), (1, 2, 1, 3), (1, 2, 3, 4), (1, 2, 3, 2), (1, 2, 3, 1), (1, 2, 3, 3), (1, 1, 2, 4), (1, 1, 2, 2), (1, 1, 2, 1), (1, 1, 2, 3), (1, 1, 1, 4), (1, 1, 1, 2), (1, 1, 1, 1), (1, 1, 1, 3), (1, 1, 3, 4), (1, 1, 3, 2), (1, 1, 3, 1), (1, 1, 3, 3)}. 246 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 247 6 n. atreas and c. karanikas we may obtain various enumerations of the elements of s(m) (and hence p (m) as well). indeed, let us fix any element r = (r1, r2, ..., rm) ∈ r(m) = p (1)× p (2)× ...× p (m), (4) where ri = (ri,1, ...ri,i) ∈ p (i), i = 1, ...,m. then we have: theorem 1 let s(m) be defined in (1) and r be a fixed element of r(m) as in (4). for any s ∈ s(m) we define wr,m(s) = (r1,s1 , r2,s2 , ..., rm,sm) then the map wr,m is onto s(m). proof: let us fix an element r ∈ r(m). since ri,si ≤ i (due to the fact that ri ∈ p (i)), we deduce that wr,m(s) ∈ s(m). also, the fact that ri,j ≤ i for any j = 1, ..., i implies that wr,m is onto s(m), because any element si of s = (s1, ..., sm) can be written by si = ri,a(i) for some index a(i) ≤ i and so by defining a = {a(i) : i = 1, ...,m} we have wr,m(a) = s. let u be as in (2) and wr,m be as in theorem 1. it is easy to see that the map uwr,mu−1 : {0, ...,m!− 1} → {0, ...,m!− 1} provides a method for shuffling the set {0, ...,m! − 1}. by altering the selection of r ∈ r(m) in (4) we obtain a different shuffling. finally, it is clear that the class of mappings { qwr,mu−1 : r ∈ r(m) } provides a great variety of enumeration/shuffling methods for the set of permutations p (m). example 3 for m = 4 and r = {(1), (2, 1), (2, 1, 3), (4, 2, 1, 3)}, then by using theorem 1, the lexicographical order of s(4) (see example 2) is shuffled to: {(1, 2, 2, 4), (1, 2, 2, 2), (1, 2, 2, 1), (1, 2, 2, 3), (1, 2, 1, 4), (1, 2, 1, 2), (1, 2, 1, 1), (1, 2, 1, 3), (1, 2, 3, 4), (1, 2, 3, 2), (1, 2, 3, 1), (1, 2, 3, 3), (1, 1, 2, 4), (1, 1, 2, 2), (1, 1, 2, 1), (1, 1, 2, 3), (1, 1, 1, 4), (1, 1, 1, 2), (1, 1, 1, 1), (1, 1, 1, 3), (1, 1, 3, 4), (1, 1, 3, 2), (1, 1, 3, 1), (1, 1, 3, 3)}. enumeration and coding permutations and reversible logical circuits 7 if q is defined in (3), then by using the composition map q−1wr,4u −1 we obtain the following enumeration of the set p (4): {(1, 2, 3, 4), (1, 4, 2, 3), (4, 1, 2, 3), (1, 2, 4, 3), (2, 3, 1, 4), (2, 4, 3, 1), (4, 2, 3, 1), (2, 3, 4, 1), (3, 2, 1, 4), (3, 4, 2, 1), (4, 3, 2, 1), (3, 2, 4, 1), (2, 1, 3, 4), (2, 4, 1, 3), (4, 2, 1, 3), (2, 1, 4, 3), (1, 3, 2, 4), (1, 4, 3, 2), (4, 1, 3, 2), (1, 3, 4, 2), (3, 1, 2, 4), (3, 4, 1, 2), (4, 3, 1, 2), (3, 1, 4, 2)}. 3 a class of boolean matrices coded by permutations and a class of bijection maps before we introduce a class of bijection maps on {0, 1, ..., qm−1} for any pair of natural numbers m, q ≥ 2, we present as in [2] a class of sparse boolean matrices and their properties. definition 1 for any natural number m ≥ 2 we define by zm the class of all m×m boolean matrices whose row vectors zi satisfy zi ⊙ zj = cij zmax{i,j} : cij ∈ {0, 1}, i, j = 1, ...,m, where ⊙ is the usual hadamard product operation. then the following result is straightforward: lemma 1 [2] let a be an m ×m boolean matrix and let 1 ≤ i < j ≤ m. then a ∈ zm if and only if supp{aj} ⊂ supp{ai} or supp{ai}∩supp{aj} = ∅. here, supp{aj} denotes the set of all non zero entries of the row aj. in [2] we proved the following: proposition 2 let p (m) and s(m) be defined in section 2. then every matrix in the class zm is uniquely identified by a pair (ρ, s) ∈ p (m)×s(m). using the above observations we may easily construct elements in the above class of zm matrices. indeed, let us fix a pair (ρ, s) ∈ p (m) × s(m) which determines a matrix z ∈ zm in a unique way. from the pair (ρ, s) we may construct z in the following manner: 246 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 247 8 n. atreas and c. karanikas (i) first, we use ρ to permute the rows of the identity matrix im and so we construct an m×m permutation matrix, say z1. (ii) starting with the above matrix z1, we construct a sequence {zi}mi=2 of m × m matrices iteratively, by using s ∈ s(m). in the ith step of this iteration, a matrix zi is constructed from the matrix zi−1 based on the following rule: (a) if si = i, define zi = zi−1. (a) if si < i, define zi by replacing only the si-row of zi−1 with the sum of the i-row and si-row of zi−1. (iii) execute step (ii) for any i = 2, ...,m. then z = zm is a matrix in the class zm. example 4 let m = 5, ρ = (4, 1, 2, 5, 3) and s = (1, 1, 3, 1, 3). then the element z ∈ z5 associated with the above pair (ρ, s) is the following z =   1 0 0 1 1 1 0 0 0 0 0 1 1 0 0 0 0 0 0 1 0 0 1 0 0   . it is remarkable that any matrix z in the class zm (which depends only on a pair (ρ, s)) is invertible and the entries of inverse matrix z−1 are immediately computed by the above pair (ρ, s): z−1 i,j =   1 i = ρ(j) −1, i = ρ(s(j)) and s(j) < j 0 otherwise , i, j = 1, ...,m. (5) example 5 if z ∈ z5 is as in example (4), then the inverse matrix of z is calculated directly from (5): z−1 =   0 1 0 0 0 0 0 1 0 −1 0 0 0 0 1 1 −1 0 −1 0 0 0 0 1 0   . 248 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 249 8 n. atreas and c. karanikas (i) first, we use ρ to permute the rows of the identity matrix im and so we construct an m×m permutation matrix, say z1. (ii) starting with the above matrix z1, we construct a sequence {zi}mi=2 of m × m matrices iteratively, by using s ∈ s(m). in the ith step of this iteration, a matrix zi is constructed from the matrix zi−1 based on the following rule: (a) if si = i, define zi = zi−1. (a) if si < i, define zi by replacing only the si-row of zi−1 with the sum of the i-row and si-row of zi−1. (iii) execute step (ii) for any i = 2, ...,m. then z = zm is a matrix in the class zm. example 4 let m = 5, ρ = (4, 1, 2, 5, 3) and s = (1, 1, 3, 1, 3). then the element z ∈ z5 associated with the above pair (ρ, s) is the following z =   1 0 0 1 1 1 0 0 0 0 0 1 1 0 0 0 0 0 0 1 0 0 1 0 0   . it is remarkable that any matrix z in the class zm (which depends only on a pair (ρ, s)) is invertible and the entries of inverse matrix z−1 are immediately computed by the above pair (ρ, s): z−1 i,j =   1 i = ρ(j) −1, i = ρ(s(j)) and s(j) < j 0 otherwise , i, j = 1, ...,m. (5) example 5 if z ∈ z5 is as in example (4), then the inverse matrix of z is calculated directly from (5): z−1 =   0 1 0 0 0 0 0 1 0 −1 0 0 0 0 1 1 −1 0 −1 0 0 0 0 1 0   . enumeration and coding permutations and reversible logical circuits 9 we consider now a matrix z−1 as above corresponding to a pair ρ = (ρ1, ..., ρm) ∈ p (m) and s = (s1, ..., sm) ∈ s(m). we shall use z−1 to define a new shuffling method. by elementary calculations, for any real row vector e = (e1, ..., em) we obtain ( ez−1 ) i = eρi − ( 1− δi,si ) eρsi , i = 1, ...,m. (6) here, δi,j denotes the usual kronecker’s delta symbol. inspired from (6) we have: theorem 2 let m, q ≥ 2 be natural numbers, ρ = (ρ1, ..., ρm) ∈ p (m) and s = (s1, ..., sm) ∈ s(m). we define the set e(q) m = {en = (en,1, ..., en,m) : n = 0, ..., qm − 1}, where en is the sequence of digits of n ∈ {0, ..., qm − 1} with respect to its q-adic expansion n = m∑ i=1 en,iq i−1. then the map tq,ρ,s : e (q) m → e(q) m such that for any i = 1, ...,m tq,ρ,s ( en ) i = mod ( en,ρi − ( 1− δi,si ) en,ρsi , q ) is a bijection. proof: for any natural numbers m, q ≥ 2 we fix a pair (ρ, s) ∈ p (m)×s(m) and we consider the above operator tq,ρ,s. from now on we write t = tq,ρ,s for simplicity. let t (ek) and t (en) be two sequences for some pair (k, n) ∈ {0, ..., qm−1}2. notice that the elements of ek and en belong in {0, ..., q−1} by definition. assume that t (ek) = t (en) ⇒ t (ek)i = t (en)i, ∀i = 1, ...,m. (7) if i = 1 in (7), then by recalling the definition of s(m) in (1) we have s1 = 1, so t (ek)1 = t (en)1 ⇒ mod ( ek,ρ1 , q ) = mod ( en,ρ1 , q ) . 248 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 249 10 n. atreas and c. karanikas hence ek,ρ1 = en,ρ1 . if i = 2, then s2 ∈ {0, 1}. for s2 = 2 we immediately obtain ek,ρ2 = en,ρ2 . for s2 = 1 we have t (ek)2 = t (en)2 ⇒ mod ( ek,ρ2 − ek,ρs2 , q ) = mod ( en,ρ2 − en,ρs2 , q ) ⇒ mod ( ek,ρ2 − en,ρ1 , q ) = mod ( en,ρ2 − en,ρ1 , q ) , where the last equality was derived from the fact that ek,ρ1 = en,ρ1 as we showed above. hence, either ek,ρ2 − en,ρ1 = en,ρ2 − en,ρ1 ⇒ ek,ρ2 = en,ρ2 or q − (ek,ρ2 − en,ρ1) = q − (en,ρ2 − en,ρ1) ⇒ ek,ρ2 = en,ρ2 . therefore, in any case we obtain ek,ρ2 = en,ρ2 . we proceed in the same manner for the remaining values i = 3, ...,m obtaining ek,ρi = en,ρi , ∀i = 1, ...,m. since ρ is a permutation, necessarily ek,i = en,i, ∀i = 1, ...,m and the proof is complete. it is clear that the above operator tq,ρ,s provides a code for shuffling the elements of the set {0, ..., qm − 1}. example 6 let q = 3, ρ = (2, 1), s = (1, 2) and e (3) 2 = {(0, 0), (0, 1), (0, 2), (1, 0), (1, 1), (1, 2), (2, 0), (2, 1), (2, 2)}. then by the above definition of tq,ρ,s we obtain (0, 0) → (0, 0), (0, 1) → (1, 0), (0, 2) → (2, 0), (1, 0) → (0, 1), (1, 1) → (1, 1), (1, 2) → (2, 1), (2, 0) → (0, 2), (2, 1) → (1, 2) and (2, 2) → (2, 2) or tq,ρ,s : {0, 1, 2, 3, 4, 5, 6, 7, 8} → {0, 3, 6, 1, 4, 7, 2, 5, 8}. 250 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 251 10 n. atreas and c. karanikas hence ek,ρ1 = en,ρ1 . if i = 2, then s2 ∈ {0, 1}. for s2 = 2 we immediately obtain ek,ρ2 = en,ρ2 . for s2 = 1 we have t (ek)2 = t (en)2 ⇒ mod ( ek,ρ2 − ek,ρs2 , q ) = mod ( en,ρ2 − en,ρs2 , q ) ⇒ mod ( ek,ρ2 − en,ρ1 , q ) = mod ( en,ρ2 − en,ρ1 , q ) , where the last equality was derived from the fact that ek,ρ1 = en,ρ1 as we showed above. hence, either ek,ρ2 − en,ρ1 = en,ρ2 − en,ρ1 ⇒ ek,ρ2 = en,ρ2 or q − (ek,ρ2 − en,ρ1) = q − (en,ρ2 − en,ρ1) ⇒ ek,ρ2 = en,ρ2 . therefore, in any case we obtain ek,ρ2 = en,ρ2 . we proceed in the same manner for the remaining values i = 3, ...,m obtaining ek,ρi = en,ρi , ∀i = 1, ...,m. since ρ is a permutation, necessarily ek,i = en,i, ∀i = 1, ...,m and the proof is complete. it is clear that the above operator tq,ρ,s provides a code for shuffling the elements of the set {0, ..., qm − 1}. example 6 let q = 3, ρ = (2, 1), s = (1, 2) and e (3) 2 = {(0, 0), (0, 1), (0, 2), (1, 0), (1, 1), (1, 2), (2, 0), (2, 1), (2, 2)}. then by the above definition of tq,ρ,s we obtain (0, 0) → (0, 0), (0, 1) → (1, 0), (0, 2) → (2, 0), (1, 0) → (0, 1), (1, 1) → (1, 1), (1, 2) → (2, 1), (2, 0) → (0, 2), (2, 1) → (1, 2) and (2, 2) → (2, 2) or tq,ρ,s : {0, 1, 2, 3, 4, 5, 6, 7, 8} → {0, 3, 6, 1, 4, 7, 2, 5, 8}. enumeration and coding permutations and reversible logical circuits 11 4 on reversible gates in this section we see that several of the well known reversible gates can be obtained by the bijection maps of theorem 2. first, we modify theorem 2 as follows: theorem 3 for any natural number m, let (ρ, s) ∈ p (m)× s(m) be as in theorem 2 and em = {en := (en,1, ..., en,m) : n = {0, ..., 2m − 1}} be the set of all m-bit arrays. then: (i) the map tρ,σ : em → em such that for any j = 1, ...,m we have tρ,s(en)j = ∣∣en,ρj − (1− δj,s(j))en,ρs(j) ∣∣ is a bijection. (ii) for any permutation τ ∈ p (m) we denote by lτ (en) = (en,τ(1), ..., en,τ(m)) the element of em obtained from shuffling en by the permutation τ . then lτtρ,σ : em → em is a bijection too. proof: (i). it is a direct consequence of theorem 2 for q = 2. (ii) it is immediate. example 7 the feynman gate. it is a 2-bit reversible map such that (0, 0) → (0, 0), (0, 1) → (0, 1), (1, 0) → (1, 1) and (1, 1) → (1, 0). according to theorem 3, this gate corresponds to the map tρ,σ, where ρ = (1, 2) and σ = (1, 1). 250 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 251 12 n. atreas and c. karanikas in a different notation this gate can be uniquely described by a matrix in the class z2 associated with the above pair (ρ, s) ∈ p (2)× s(2) (see definition 1 or example 4) zρ,s = ( 1 1 0 1 ) . also, in a different notation this gate can be described by the following 4× 4 matrix (by concatenating the corresponding inputs and outputs)   0 0 0 0 0 1 0 1 1 0 1 1 1 1 1 0   . example 8 the double feynman gate. it is a reversible map on the 3 bit binary arrays so that (0, 0, 0) → (0, 0, 0), (1, 0, 0) → (1, 1, 1), (0, 1, 0) → (0, 1, 0), (1, 1, 0) → (1, 0, 1), (0, 0, 1) → (0, 0, 1), (1, 0, 1) → (1, 1, 0), (0, 1, 1) → (0, 1, 1) and (1, 1, 1) → (1, 0, 0). according to theorem 3, this gate corresponds to the map tρ,σ, where ρ = (1, 2, 3) and σ = (1, 1, 1). in a different notation, this gate can be uniquely described by a matrix in the class z3 associated with the above pair (ρ, s) ∈ p (3) × s(3) (see the above definition 1 or example 4) zρ,s =   1 1 1 0 1 0 0 0 1   . also, in a different notation this gate can be described by the following 8× 6 matrix (by concatenating the corresponding inputs and outputs)   0 0 0 0 0 0 0 0 1 0 0 1 0 1 0 0 1 0 0 1 1 0 1 1 1 0 0 1 1 1 1 0 1 1 1 0 1 1 0 1 0 1 1 1 1 1 0 0   . 252 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 253 12 n. atreas and c. karanikas in a different notation this gate can be uniquely described by a matrix in the class z2 associated with the above pair (ρ, s) ∈ p (2)× s(2) (see definition 1 or example 4) zρ,s = ( 1 1 0 1 ) . also, in a different notation this gate can be described by the following 4× 4 matrix (by concatenating the corresponding inputs and outputs)   0 0 0 0 0 1 0 1 1 0 1 1 1 1 1 0   . example 8 the double feynman gate. it is a reversible map on the 3 bit binary arrays so that (0, 0, 0) → (0, 0, 0), (1, 0, 0) → (1, 1, 1), (0, 1, 0) → (0, 1, 0), (1, 1, 0) → (1, 0, 1), (0, 0, 1) → (0, 0, 1), (1, 0, 1) → (1, 1, 0), (0, 1, 1) → (0, 1, 1) and (1, 1, 1) → (1, 0, 0). according to theorem 3, this gate corresponds to the map tρ,σ, where ρ = (1, 2, 3) and σ = (1, 1, 1). in a different notation, this gate can be uniquely described by a matrix in the class z3 associated with the above pair (ρ, s) ∈ p (3) × s(3) (see the above definition 1 or example 4) zρ,s =   1 1 1 0 1 0 0 0 1   . also, in a different notation this gate can be described by the following 8× 6 matrix (by concatenating the corresponding inputs and outputs)   0 0 0 0 0 0 0 0 1 0 0 1 0 1 0 0 1 0 0 1 1 0 1 1 1 0 0 1 1 1 1 0 1 1 1 0 1 1 0 1 0 1 1 1 1 1 0 0   . enumeration and coding permutations and reversible logical circuits 13 fig. 1: the set of points {( n, t2,ρ,s(n) ) : n ∈ i8 } for the selection of the pair (ρ, s) as in example 9. recall that the map t2,ρ,s is a bijection on the set i8 providing a shuffling method for i8. we mention here that the 2-bit swap gate can be also implemented by the map tρ,s by selecting ρ = (2, 1) and s = (1, 2). however, the 3-bit toffoli and fredkin gates cannot be implemented via tρ,s. 5 coding pseudorandom permutations we apply theorem 2 to give by an example a method to code a pseudorandom permutation in p (2m). for any (ρ, s) ∈ p (m) × s(m) and a fixed random permutation r ∈ r(2m) we shuffle the image of t2,ρ,s by the composition map wr,2t2,ρ,s for some particular selection of r ∈ r(28) (see theorem 1) and we obtain a pseudo-random permutation coded by a triple (ρ, s, r). example 9 let ρ = (5, 7, 6, 3, 4, 8, 1, 2) and s = (1, 1, 1, 4, 5, 2, 7, 3). figure 1 shows how the bijective map t2,ρ,s of theorem 2 shuffles the elements of the set i8 = {0, ..., 28 − 1}. in figure 2 we use a fixed element r ∈ r(28) (see theorem 1) and we shuffle the set i8 by means of the composition operator wr,2t2ρ,s. in this case, the graph appears to be more ”randomly” distributed than the graph of figure 1. in conclusion, we demonstrated a variety of new enumeration/shuffling methods for the group of permutations. we also proposed a class of bijections for sets of natural numbers based on efficient coding methods for 252 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 253 14 n. atreas and c. karanikas fig. 2: the set of points { (n,wr,2t2,ρ,s(n)) : n ∈ i8 } for some r ∈ r(28) and (ρ, s) as in example 9. sparse boolean matrices. we also discussed possible connections of the shuffling problem with the random permutation generation problem. according to [8, 9], any permutation in p (m) can be almost uniformly randomly distributed using mlog(m)/2. this observation may be important for establishing a connection between our shuffling method and the random permutation generation problem in future.we believe that this direction is very promising. references [1] k. n. patel, j. p. hayes, and i. l. markov, “fault testing for reversible circuits,” in ieee vlsi test symposium, napa valley, california, 2003, pp. 410–417. [2] n. atreas and c. karanikas, “boolean invertible matrices identified from two permutations and their corresponding haar-type matrices,” linear algebra appl., vol. 435, no. 1, pp. 95–105, 2011. [3] ——, “multiscale haar unitary matrices with the corresponding riesz products and a characterization of cantor-type languages,” j. fourier anal. appl., vol. 13, no. 2, pp. 197–210, 2007. [4] ——, “haar-type orthonormal systems, data presentation as riesz products and a recognition on symbolic sequences,” contemporary math., vol. 451, pp. 1–9, 2008. [5] ——, “discrete type riesz products,” in walsh and dyadic analysis, 2008, pp. 137–143. 254 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 255 14 n. atreas and c. karanikas fig. 2: the set of points { (n,wr,2t2,ρ,s(n)) : n ∈ i8 } for some r ∈ r(28) and (ρ, s) as in example 9. sparse boolean matrices. we also discussed possible connections of the shuffling problem with the random permutation generation problem. according to [8, 9], any permutation in p (m) can be almost uniformly randomly distributed using mlog(m)/2. this observation may be important for establishing a connection between our shuffling method and the random permutation generation problem in future.we believe that this direction is very promising. references [1] k. n. patel, j. p. hayes, and i. l. markov, “fault testing for reversible circuits,” in ieee vlsi test symposium, napa valley, california, 2003, pp. 410–417. [2] n. atreas and c. karanikas, “boolean invertible matrices identified from two permutations and their corresponding haar-type matrices,” linear algebra appl., vol. 435, no. 1, pp. 95–105, 2011. [3] ——, “multiscale haar unitary matrices with the corresponding riesz products and a characterization of cantor-type languages,” j. fourier anal. appl., vol. 13, no. 2, pp. 197–210, 2007. [4] ——, “haar-type orthonormal systems, data presentation as riesz products and a recognition on symbolic sequences,” contemporary math., vol. 451, pp. 1–9, 2008. [5] ——, “discrete type riesz products,” in walsh and dyadic analysis, 2008, pp. 137–143. enumeration and coding permutations and reversible logical circuits 15 [6] n. atreas, c. karanikas, and p. polychronidou, “a class of sparse unimodular matrices generating multiresolution and sampling analysis for data of any length,” siam j. matrix anal. appl.,, vol. 30, no. 1, pp. 312–323, 2008. [7] d. h. lehmer, “teaching combinatorial tricks to a computer,” in proc. symbos. appl. math. combinatorial analysis, vol. 10, 1960, pp. 179–193. [8] p. diaconis, g. graham, and s. p. holmes, “statistical problems involving permutations with restricted positions,” in lecture notes. monograph series, vol. 36, 2001, pp. 195–202. [9] p. diaconis and m. shahshahani, “generating a random permutation with random transposition,” z. wahr. verw. gebeite, vol. 57, no. 2, pp. 159–17, 1981. 254 c. karanikas, n. atreas enumeration and coding permutations and reversible logical circuits 255 instruction facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 85 102 doi: 10.2298/fuee1501085к rpll rendezvous protocol for long-living sensor node  mirko r. kosanović 1 , mile k. stojčev 2 1 college of applied technical sciences, niš, 2 university of niš, faculty of electronic engineering, niš, serbia abstract. sensor nodes (sns), as constituents of wireless sensor network (wsn), are battery-powered not rechargeable devices and have limited amount of energy available. since the lifetime of sns is a crucial parameter for energy-efficient wsn design, it is essential to extend their lifetimes as much as possible. here we propose a rendezvous scheme called rendezvous protocol for long-living sn, rpll. this scheme is based on implementation of a duty-cycling technique. for each sn within wsn a unique identification number (id) is allocated, thanks to which a collision problem is effectively remedied. the rpll provides an on time wake-up of sns in a fully decentralized way and fast detection of new appended sns. taking into account the wsn and sn working parameters, such as beacon time, beacon period, number of active sns, and quartz oscillator instability, by using the proposed method, a wsn designer can determine the maximal lifetime of a sn, i.e. achieve optimal energy consumption. key words: rendezvous protocol; duty cycling; energy efficiency; wireless sensor networks 1. introduction wireless sensor networks (wsns) consist of a large number of cooperating, radioequipped and battery powered sensor nodes (sns). battery is the main power source in a sn. bearing in mind that during its lifetime a sn operates with limited battery capacity (single battery charge) the energy consumption becomes a critical issue. for example, off-the-shelf sn works for a few days, if all its parts, including transceiver and microcontroller, are permanently powered-on. a sn is assumed to be dead when it is out of battery. the challenge is to guarantee lifetime of several years [1]. four main activities during which a sn consumes energy are sensing, communication, computation, and storage [2]. the power consumed during communication is the greatest portion of energy consumption by any sn [1]. communication between any two sns is possible only if both of them are powered-on simultaneously. in order to arrange simultaneous on-time communication a rendezvous scheme is commonly used. several ideas for rendezvous schemes in low duty cycle wsns have been proposed [3]. they usually function at the received june 3, 2014; received in revised form august 25, 2014 corresponding author: mirko r. kosanović college of applied technical sciences, aleksandra medvedeva 20, 18 000 niš, serbia (e-mail: mirko.kosanovic@open.telekom.rs) 86 m. r. kosanović, m. k. stojĉev media access control (mac) layer and can be categorized into three general classes [4, 5]: (i) asynchronous – the sender sn tries to capture the unknown active time of the receiver sn; (ii) synchronous – sns are synchronized in time and agree on specific communications time slots; and (iii) pseudo asynchronous – sns establish rendezvous on demand by using periodic wakeup. see ref [4] for more details about this problematic. we consider a pseudo-asynchronous scheme because our application is primarily intended for rare events observation, i.e. in applications that are typical for environment monitoring. in this scheme sns are powered on and off periodically, and a beaconing approach is used to express the desire or willingness to communicate. the concept of periodic on/off powering an sn, also called duty-cycling, has to satisfy performance requirements related to throughput, guaranteed end-to-end delay and a lifetime of several years, often contradictory design parameters. in general, duty cycling is the most widely used mechanism for saving energy in wsn, i.e. to elongate the wsn lifetime. the idea behind this is clear. keep all or parts of hardware in low power sleep state except during instances when the hardware is operative. in this way, depending on the network activity, the sn switches its mode of operation between active and sleep. duty-cycling protocols based on rendezvous scheme not only arrange for sns to communicate, but also inherently include the availability to plan the channel access time, avoiding and resolving collisions, and some time-synchronization mechanisms which are required to locally determines the beginning of the active and sleep state [4, 6, 7]. here we propose the usage of rendezvous scheme called rendezvous protocol for long-living sn, rpll. in essence we continue our work [8], and present a complete rpll protocol. the rpll uses pseudo-asynchronous scheme and is based on the implementation of a duty cycling mechanism. its principle of operation is similar to distributed low duty cycle (dldc-mac) protocol [9], from which we have adopted all advantages that it offers (synchronized wake-up times of sns, hidden terminal, link failures, and asymmetric links elimination, etc.). with the aim to remedy the notified disadvantages of dldc-mac protocol, which primarily relate to collision avoidance during the registration of new sns, as well as fast and correct selection of beacon time and beacon period, we propose its modification. the modification deals with involving a unique id for each sn within wsn which provides us with integration of two activities (related to neighbor discovering and neighbor registration) into a single one (neighbor discovery and registration). this modification makes it possible to effectively overcome the aforementioned disadvantages. our primary interest in this investigation is to determine how the working parameters of this protocol (beacon time, beacon period, number of communication active sns, and quartz oscillator instability) have impact on power consumption, and to understand how to achieve a proper tradeoff between performance and power. to this end, the performances of rpll protocol that relate to the number of active sns, duration of a beacon period, and power consumption of sn, are estimated. for the defined and selected working parameters, by using the appropriate method, the designer can minimize the power consumption of sn. rpll rendezvous protocol for long-living sensor nod 87 2. power management protocols and energy waste in wsns depending on the layer on the network architecture they are implemented, power management protocols can be divided into the following two groups [10]: a) independent sleep/wakeup protocols execute on top of a media access control (mac) protocol. since these protocols run at the network or application layer, they provide usage with any mac protocol and are characterized with good adaptability to different application needs. b) strictly integrated with the mac protocol these protocols permit optimization of media access functions, but as specific solutions are not universal. in terms of the approach which is used to determine when sns should be switched-on, the sleep/wakeup protocols can be divided into the following three categories [5]: 1. on-demand – a sn should wake-up when another sn wants to communicate with it. 2. scheduled-rendezvous – each sn should wake-up at the same time as its neighbors. 3. asynchronous protocols – a sn should wake-up when it wants and still be able to communicate with its neighbors. depending on which way the source and destination sn achieve rendezvous, three categories of rendezvous schemes exist [11]: 1. synchronous scheme – all sns agree to the same clock time, wake-up synchronously and rendezvous with one another. 2. asynchronous scheme – a source sn actively wakes-up destination sns. 3. pseudo-asynchronous scheme – a source sn wakes-up first and waits for destination sns to wake-up and rendezvous. as previously discussed, the energy is consumed by a sn for the sensing purpose, processing the data and communication. communication consumes the largest amount of energy. in a typical sn, during communication, the major waste of energy occurs due to the following reasons [12]: a) idle listening – an sn carrier senses the idle channel in anticipation of possible arrival of packets, what causes waste of power. b) collision – when large number of sns is present in a small area, collision is a common occurrence if it is not effectively controlled. a collided packet is discarded; an sn usually retransmits the packet, but packet retransmission causes a further waste of energy. c) overhearing when sn’s neighbors are transmitting packets, although the packet is not designated for this sn, it still receives the packet, which represents yet another source of power waste. d) over-emitting – a sn sends packets to another sn but the receiver sn is not ready, and the packet has to be sent again, which also costs wasting power. e) control packet overhead – the presence of extra control packets in wsn such as a request to send (rts), clear to send (cts), acknowledgment (ack), beacons, packets in csma-based protocols, and other transmitting and receiving control packets cost power as well. 88 m. r. kosanović, m. k. stojĉev 3. distributed low duty cycle rendezvous protocol first of all, we will analyze shortly the dldc-mac protocol, and point out to its principle of operation, advantages and drawbacks. the basic idea of this solution is described in [9]. for the sake of simplicity but without any intention to generalize the following discussion will explain dldc-mac protocol operation when the wsn consists of three sns, sn1, sn2 and sn3, respectively. figure 1 presents a scenario of wsn activities which uses a dldc-mac protocol. as can be seen from fig. 1 the following four activities (phases) exist: 1. current state (cu_st) – each registered sn (in our case, sn1 and sn2) sends a short message called beacon periodically and wakes-up to receive beacons from its neighbors. the beacon period is the same for all sns. after receiving a neighbor`s beacon the sn estimates the time of the next beacon taking into account the beacon period, the reception time, and the guard period. having in mind that the sn executes this runtime for several neighbors it knows the beacon times for its neighbors. thanks to this, the sn spends most of the time in a sleep state, and wakes-up only to receive neighbor`s beacons and to send its own beacon. upon transmitting a beacon, each sending sn enters shortly into a receive mode during which it can accept data and commands piggybacked in the beacon. in this way each sn permanently takes an active part in communication and knows with how many sns it communicates. let us note that every phase (cu_st, ne_di, ne_re and up_sc) is divided into several time slots denoted as tbcy (see fig. 1). due to involving a guard time, used for compensation of sn`s quartz instability, each time slots is slightly longer than the time needed to send and to receive a beacon from its neighbor. 2. neighbor discovering (ne_di) – after powering-on (see fig. 1.) the sn3 enters into a phase ne_di and listens for a whole beacon period. during this period sn3 receives neighbors` beacons from sn1 and sn2, and stores their reception times. 3. neighbor registration (ne_re) – after recognizing sn1 and sn2, the node sn3 sends network join advertisement messages during the time periods when sn1 and sn2 are in the receive mode, respectively. the advertisement messages contain information which relate to the beacon time of the node sn3. 4. update scheduler (up_sc) – this phase is identical to cu_st phase with one exception, the joined sn3 becomes active now, since sn1 and sn2 accept the beacons from sn3. the main advantages of dldc-mac protocol are: i) even in the presence of very unreliable links, it can successfully synchronize the wake-up times of sns in a fully decentralized way. ii) problems accompanied with clock drifts, link failures, temporarily asymmetric links, and a hidden terminal, are effectively overcome. iii) by using off-the-shelf sns, long lifetime is possible to achieve. rpll rendezvous protocol for long-living sensor nod 89 sn sn sn cu_st (valid for sn and sn ) cu_st (valid for sn and sn ) ne_di (valid for sn ) t receive send 1 1 1 3 ne_re (valid for sn ,sn ,sn )321 up_sc (valid for sn ,sn ,sn )321 2 2 2 3 beacon period beacon time sleep period tbcy fig. 1 dldc-mac rendezvous scheme we meet the following drawbacks of dldc-mac protocol during: a) determination of an accurate beacon time during which the new joined sn tries to announce its presence in wsn, i.e. the selection of proper beacon time for the newly joined sn. b) when the time difference between any two beacons is smaller than tbcy (see fig. 1), one of the affected sns must choose a new beacon time. since the beacon time is not pre-defined a problem arises when two or more new sns choose the same beacon time, or the beacon time overlaps with the beacon period of other neighboring sns during the new attempt period. c) collision appears when two or more sns are simultaneously registered during the ne_re phase. 4. rendezvous protocol for long-living sensor node in rpll we assume that each sn is uniquely identified by its identification number, idx, x=1, 2 … n, where n corresponds to the total number of sns within wsn. involvement of idx allows us to accurately define a unique time slot for each sn, within the beacon period, during which a corresponding sn can send data. let us note that the unique id is assigned during sn`s software initialization, i.e. in a phase of installing system and application software. the scenario of events for rpll is given in fig. 2. the following three phases exist: 1. current state (cu_st) – identical to the one defined in dldc-mac. 2. neighbor discovering and registration (ne_di_re) – since each sn has a unique idx it knows in advance the position of its time slot within beacon period. each new joined sn during ne_di_re phase enters in the receive mode. during a time slot t3 (t1), see fig. 2, the node sn2 accepts the beacon from sn3 (sn1) and notifies sn3 (sn1) about its presence in wsn, while during the time slot t2 it announces its presence to the wsn (in this way sn3 announces its presence to others sns (for example sn4, sn5, …) as possible candidates that can attempt to join wsn during the same beacon period). this opportunity allows us to reduce a registration latency of the new joined sn (in fig. 2 it is sn2) to a single beacon period. 3. update scheduler (up_sc) – identical to that one defined in the dldc-mac protocol. 90 m. r. kosanović, m. k. stojĉev a procedure which deals with the joining of new sn to the wsn is presented in figure 2 (in our case a new sn is sn2). after powering-on, at the instant t1, for a single beacon period tbp, sn2 switches into the receive mode (ne_di_re phase) and accepts beacons from its neighbors. during this period each registered sn (sn1 and sn3) in a predefined time slot, determined by the sn`s id number, sends a beacon. since sn2 accepts a beacon from its neighbor sn3 (sn1) it shortly switches to send a mode and announces a presence by sending its id2 to sn3 (sn1). in this moment sn3 (sn1) is in receive mode waiting to receive information from the new joined sn (in our case sn2). according to the received id2 the node sn3 (sn1), in the next beacon period (during the phase up_sc) precisely determines a time slot for listening sn2. in this manner, possible collision during registration of a new single joined sn (i.e. sn2) is effectively avoided. however, let us note that a collision problem can appear when two or more sns simultaneously join the wsn after powering-on during the same beacon period (for more details how to bypass this problem see subsection 4.1). as can be seen from fig. 2 the rpll protocol differs in respect to dldc_mac (see fig. 1) in that it merges ne_di and ne_re phases into a single phase called now ne_di_re. the other two phases cu_st and up_sc remain identical for both protocols. in this way, the needed latency for transition from phase ne_di to phase cu_st (see fig. 1) decreases for one beacon period. during cu_st (up_sc) phase a beacon period always starts with sending beacon from sn with id=1 (instant t2 in fig. 2). thanks to this fact, it is easy to synchronize the operation, at the global level, of all sns in wsn which relates to identification of the start and the end of each protocol phase. some important observations concerning the implementation of rpll protocol are the following: 1. it is preferable to use rpll protocol in wsn with a moderate number of sns (n < 255). in this case id number is 8 bit width. 2. a designer assigns a unique id number to each sn before its joining to wsn. 3. time slot position of each beacon time, within a beacon period, is fixed and is directly determined by sn`s id number. 4. time duration of a beacon period is known in advance to each sn, i.e. defined during programming of a sn. 5. minimal time duration of beacon period directly depends on a total number of sns, n, within a wsn. sn2 sn1 sn2 sn3 ne_di_re (valid for sn )2 cu_st (valid for sn and sn )1 3 cu_st (valid for sn and sn )1 3 1 2 3 up_sc (valid for sn ,sn ,sn ) t receive send t1 t1 t3 t3 t1 t2 t2 t2 powering on tbp commun. activity fig. 2 initialization phase without collisions. rpll rendezvous protocol for long-living sensor nod 91 4.1. collision avoidance collision appears when during single beacon period several sns are simultaneously switched on and try to transmit a packet at the same time. the following difficulty appears now in dldc_mac protocol: sns that are in collision cannot accurately determine their beacon times, and cannot accurately define the duration of a total beacon period. without loss of generality, in fig. 3 we show how the collision problem in rpll protocol can be solved. namely, we assume that two sensor nodes sn2 and sn4 are powered-on during the same beacon period (i.e. time overlapping between phases ne_di_re of sn2 and sn4 exists). during this we assume that id1 99.9 %) each sn spends into cu_st or up_sc phase. during a single beacon period, tbp, there are maximum n-1 receive beacon cycles, trbc, and one transmit-receive beacon cycle, ttrbc. rpll rendezvous protocol for long-living sensor nod 93 for a given tbp and defined duty cycle, dc, we will determine the maximal number of neighboring sns with which some active sn can communicate. we assume that wsn consists of maximum n sns. during cu_st phase two different sn`s activities exist. the first one, with time duration trbc, is called receive beacon cycle. during this cycle the sn receives beacon from its neighboring sns. from fig.4a we have that trbc = trb + toff. during toff sn is in sleep mode, while in trb it receives beacon. the second activity, with time duration ttrbc, is called transmit-receive beacon cycle. during this cycle, the sn transmits its beacon, and receives acknowledge from a new appending neighboring sn. from fig.4b we have that ttrbc = ttb + trb + toff, where ttb corresponds to time period needed to acquire data from the sensor element and to transmit beacon. in our case we assume that trbc = ttrbc = tbc. tbc corresponds to the duration of time slot defined in fig. 2. for an arbitrary communication active (com_active) sensor node snk, k є {1,..., n}, we define its duty cycle, dck (see fig. 3 and fig. 4), as: 1 n tbk rbk i rbi onk i k bp bc t t a t t dc t nt       , (1) where the term ai є{0,1}, i=1,...,n, where i ≠ k, points to the following: ai=1(ai=0), a node snk can (cannot) communicate with its neighboring node sn, while tonk corresponds to the total active time of snk during a single beacon period tbp. within a wsn all active sns are called com_active, while all sns that directly communicate (point to point communication) are referred to as com_visible. from eq. (1) we have, 1 n onk tbk rbk i rbi i t t t a t     . (2) let us assume now that during a cu_st phase the number of com_active neighboring sns is p, and that p0, the following condition, related to eq. (8), has to be fulfilled: 2 ( 2) 0k xdc s p   , (9) i.e. : 2 2 k x dc p s   . (10) according to eq. (10) the maximal number of com_active sns within a single wsn region can now be derived. during this analysis, sx will be taken as a parameter. in real wsn applications, the designer decides about: what kind of oscillator unit, in respect to quartz instability defined in ppm, to built-in within an sn structure? usually, quartz units with factory declared quartz frequency instability from 10 ppm up to 50 ppm are built-in into sns. due to the process, voltage, and temperature (pvt) variations, as well as the influence of others ambient conditions (pressure, humidity, etc.), some additional frequency deviations, in respect to the factory declared quartz frequency rpll rendezvous protocol for long-living sensor nod 95 instability, inevitably appear. we will consider a case when the impact of all additional frequency deviations is within the limits of ±10%. as direct consequence of frequency deviation, the number of com_active sns will differ with respect to the number of sns when quartz oscillators of nominally equal quartz frequency instability are used. in the worst case, for frequency deviation of +10 %, for fixed value of a dc factor, wsn with minimal possible com_active sns is feasible. according to eq. (10), for a given dc factor (from 0.1 up to 1 %), and specified frequency instability (from 10 up to 50 ppm) and frequency deviation of ±10 %, the maximal number of com_active sns is presented in table 1. table 1 maximal number of com_active sns in terms of dc factor ppm dc[%] 10 (±10%) 20(±10%) 30(±10%) 40(±10%) 50(±10%) -10% nom +10% -10% nom +10% -10% nom +10% -10% nom +10% -10% nom +10% 0.1 52 47 42 24 22 19 15 13 12 10 9 8 8 7 6 0.2 108 97 87 52 47 42 34 30 27 24 22 19 19 17 15 0.3 163 147 133 80 72 65 52 47 42 38 34 31 30 27 24 0.4 219 197 178 108 97 87 71 63 57 52 47 42 41 37 33 0.5 274 247 224 135 122 110 89 80 72 66 59 53 52 47 42 0.6 330 297 269 163 147 133 108 97 87 80 72 65 63 57 51 0.8 441 397 360 219 197 178 145 130 118 108 97 87 85 77 69 1 552 497 451 274 247 224 182 163 148 135 122 110 108 97 87 *note: in shaded columns the maximal number of com_active sns within wsn, is derived, i.e. this column points to p. by analyzing the results presented in table 1 we can conclude that: 1. for the same dc factor the maximal number of com_active sns always decreases as sx increases, i.e. less stable oscillators are built-in. 2. independently of quartz instability, as dc factor takes higher value, the maximal number of com_active sns increases. 3. in all cases, small frequency deviation (from 9 up to 11 ppm) causes significant variation of com_active sns. for example, for dc=1% and nominal sx =10 ppm, the difference is 552-451=101 sns. 5.2. beacon period selection for wsn with a maximal number of com_active sns, let us determine now the beacon period, tbp. to this end, in the sequel, two analyses related to the determination of a maximal number of com_active sns within wsn, will be conducted. the first one deals with the choice of tbp in terms of com_active sns, for different quartz instability sx and fixed (predefined) dc=0.5 %, as parameters. during the second analysis we determine tbp duration in terms of com_active sns for different dc factors (dc=0.1%, …, 1%) and fixed sx (sx =10ppm and sx =40 ppm), as parameters, respectively. first analysis: in general, low dc factor is preferable when long life sn operation is required. in practice the dc factor is within the range from 0.1 up to 1 % [15]. for illustration purpose only, we choose a middle value of dc (dc=0.5 %). in fig.5, the minimal duration of tbp in terms of the com_active sns, with sx as parameter, is sketched. during this we have adopted that: 96 m. r. kosanović, m. k. stojĉev a) tproc= 4 ms (in our case cpu runs at 1 mhz, packet length is 64 b, and data transfer rate is 128 kbps); b) tswitch= 6 μs (for a microcontroller of type msp430f123, where 6 μs corresponds to a switching time from active to low power mode 3, and vice versa [16]). fig. 5 minimal duration of beacon period in terms of com_visible sns for dc=0.5% according to the results presented in fig.5 we can conclude that a quartz oscillator instability has direct impact to the maximal number of com_visible sns. indenpendently of tbp, as sx increases the maximal number of com_visible sns decreases. second analysis: when dc factor is within the range from 0.1 up to 1 % similar results concerning minimal duration of tbp are obtained. a) b) fig. 6 minimal duration of tbp in terms of p, for dc factor as parameter: a) sx=10 ppm; b) sx=40 ppm time duration of tbp in terms of p (p<20), for dc factor as a parameter, and for the fixed value of quartz oscillator instabillity sx (sx=10ppm and sx=40 ppm), is sketched in fig.6a and 6b, respectively. 0 20 40 60 80 100 120 140 -50 0 50 100 150 200 250 300 350 400 450 500 b e a c o n p e ri o d [ s ] number of com_visible sns 10ppm 20ppm 30ppm 40ppm 50ppm 4 6 8 10 12 14 16 18 20 22 0 20 40 60 80 100 120 140 160 b e a c o n p e ri o d [ s ] number of com_active sns dc=0.1 % dc=0.2 % dc=0.5 % dc=1 % 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 0 200 400 600 800 1000 1200 b e a c o n p e ri o d [ s ] number of com_active sns dc=0.1 % dc=0.2 % dc=0.5 % dc=1 % rpll rendezvous protocol for long-living sensor nod 97 by analyzing the results presented in fig.6 we can conclude the following: 1. as dc factor decreases and the number of com_active sns increases, tbp increases, too. 2. as dc factor increases the curves defined by a function tbp=φ(p) become more linear. according to the results presented in fig.5 and fig.6 we can conclude that: when quartz oscillator with lower ppm value is built into sn`s architecture, then: a) for beacon period with fixed duration, wsn with larger number of com_active sns can be made to be operative. for example, for tbp =100 s and sx =40 (10) ppm, wsn composed of p=35 (82) com_active sns can be realized (see fig. 5). for wsn with a fixed number of com_active sns, correct operation can be achieved with a lower dc factor. for example, for p=20 sns, and sx =50 (10) ppm, a dc factor of 1 (0,1) % is needed for feasible wsn operation (see fig. 6). 6. estimating energy consumption it is well-known that battery factories declared that energy capacity, installed in sn, is not always equivalent to the energy drawn from that battery. with the aim to extract maximum energy from a battery, it is necessary to have a profound understanding of the following two phenomena. the first one deals with the amount of leakage current (the leakage current is a direct consequence of the battery self discharging characteristics). the second one relates to the energy consumption of sn during different phases of rpll protocol. the energy consumption of sn is equal to: sdsn t sd t avr eevdttivdttie   00 )()( (11) where esn is energy consumption of sn during its lifetime; esd is the wasted energy due to battery self discharge; v is power supply voltage; t lifetime of sn; iavr average current during lifetime of sn; and isd self discharge current. with the aim to simplify the analysis we will assume that during lifetime of sn the power supply voltage is constant. in order to determine accurately the term esn =iavrvt it is necessary to know the profile of iavr. current profiles of the sensor, transceiver, and cpu during phases up_sc and ne_di_re, are presented in fig 7a and 7b, respectively. fig. 7 current profile of sn3`s constituents during phases: a) up_sc; b) ne_di_re sensor transceiver cpu iswitch iacpu iacpu iscpuiscpu iscpu iarfiarf isen iarfiarf isrfisrfisrf isrf tbp toff toff tproc tsen 2trec 2tproctswitch t a) trec b) sensor transceiver cpu iswitch iswitchiacpu iarf tbp tswitch tswitch t 98 m. r. kosanović, m. k. stojĉev according to the principle of operation of rpll protocol we have: sdadau iihhi  )1(iavr (12) where: iau average current of sn during up_sc phase; iad – average current of sn during ne_di_re phase; isd – battery self-discharging current; and, h – time ratio which points to the fact how long during its lifetime the sn spends into the phase up_sc in respect to ne_di_re phase. let us note that during the lifetime of sn the phase ne_di_re happens at least once (during the registration of a new sn or after the reset), so limes h → 1. the average current iau during the phase up_sc (see fig.7a), is equal to: ausenaurfaucpu iii aui (13) where: ,iausen bp sen sen t t i (14) aurfi 2 ( 1) ,off switchrf rec srf switch arfrf bp bp bp t t t pi pi p i t t t     (15) and aucpu 2 i 2 ( 1) . proc guardoff switchcpu scpu switchcpu acpu bp bp bp t tt t pi pi p i t t t      (16) the average current, iad, during the phase ne_di_re (see fig.7b), is equal to: 2 ( ) 1 2switch switch ad acpu arf switch bp bp t t i i i i t t          (17) from fig. 7a we have that iacpu, iarf, isen correspond to the current values of cpu, transceiver, and sensor, respectively, when sn is in state on, while iscpu, isrf to the current values of the cpu and transceiver during the time period when sn is in the state off. in our case, for switching period tswitch= 6 µs the cpu (msp430f123) goes from active to lpm3 mode. furthermore, we assume that during switching period tswitch the switching current iswitch varies linearly, and is given by the following formulas: (i ) 2 arf srf switchrf i i   (18) ( ) 2 acpu scpu switchcpu i i i   (19) 2 )( srfscpuarfacpu switch iiii i   (20) where: iacpu (iscpu) and iarf (isrf) correspond to cpu and rf currents during active (sleep) mode, respectively (see fig.7). rpll rendezvous protocol for long-living sensor nod 99 by substituting eqs. (14), (15), (16) and (17) into eq. (12), the exact formula for calculating iavr is obtained. the architecture of our sn consists of: a) cpu low power microcontroller msp430f123; b) communication part rf modulator cc 2420; c) sensor subsystem sensor ms55er (for barometric-pressure); and d) lithium-ion battery with capacity of 560 mah. all presented results in the sequel relate to this sn architecture. in our design solution we have for iacpu=300 µa, iarf=19700 µa, iscpu=1.6 µa, isrf=1 µa, and isen=1000 µa. for rechargeable (non-rechargeable) lithium-ion battery, the selfdischarging current, isd, causes battery capacity loss of 10 % (2%) per year [17]. the required battery capacity, rbc, for wsn composed of ten neighboring sns (p=10), in terms of tbp, for one year working period is sketched in fig. 8. in fig. 8, sx is taken as a parameter, while the time ratio h = 0.9999884 corresponds to one discovery phase appearance during 24 hours time period. as can be seen from fig.8, in all cases, the minimal rbc is obtained for tbp=60 s. also, as the quality of quartz unit is better the rbc is lower. for example, for sx=50 ppm the minimal rbc50=670 mah/year, while for sx=10 ppm the minimal rbc10=516 mah/year, what corresponds to rbc increase of 23%. under identical operating conditions for p=20, we obtain similar results (curves rbc=φ(tbp) have nearly the same shape as those presented in fig.8). as an illustration, for sx=50 ppm and p=20, the minimal rbc50=1188 mah/year, while for sx=10 ppm we obtain rbc10=895 mah/year, which corresponds to rbc increase of 25 %. 0 100 200 300 400 500 600 400 600 800 1000 1200 1400 1600 1800 b a tt e ry c a p a c it y f o r o n e y e a r [m a h ] beacon period [s] 10ppm 20ppm 30ppm 40ppm 50ppm fig. 8 required battery capacity in terms of beacon periods with sx as parameter in fig. 9 the power consumption of sn, for one year working period, in terms of tbp with h as a parameter, is presented. according to the results presented in fig. 9 we can conclude that: a) as h decreases the power consumption of sn increases. b) in all cases, minimal consumption exists, but for different tbp values. for example for h=0.999988426 (single discovery cycle per day) and tbp=60s we obtain emin=670 mah, while for h=0.9999996 (single discovery cycle per month) and tbp=300 s, we obtain emin=466 mah, which corresponds to rbc increase of 30.45 %. 100 m. r. kosanović, m. k. stojĉev 0 100 200 300 400 500 600 400 600 800 1000 1200 1400 1600 1800 2000 p o w e r c o n s u m p ti o n f o r o n e y e a r [m a h ] beacon periods [s] 1 day 2 days 3 days 4 days 5 days 6 days 7 days 10 days 15 days 30 days fig. 9 required battery capacity in terms of beacon period for different wsn scanning period 6.1. power consumption comparison between dldc-mac and rpll protocols in fig. 10 a power comparison between dldc-mac and rpll protocol for one year period in terms of number of collisions, nc, and time duration of beacon period, tbp, as a parameter is given. the comparison is presented as ratio between sn`s power consumption of dldc-mac versus rpll protocol, and is denoted as pcr. by analyzing the results presented in fig. 10 we can conclude the following: i. power consumption of dldc-mac is always higher in respect to rpll protocol. ii. for both protocols as nc increases, the power consumption increases too. in addition, as nc increases the pcr increases too. for example: for tbp = 180 s and nc = 10 the pcr = 2.81 %, while for tbp = 180 s and nc = 180 we obtain pcr = 36.55 %. iii. higher power saving is always achieved for larger tbp. as tbp increases the pcr increases too. for example: for tbp = 180 s and nc = 60 the pcr = 15.95 %, while for tbp = 600 s and nc = 60 we obtain pcr = 41.00 %. -20 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 p o w e r c o n s u m p ti o n f o r 1 y e a r d l d c -m a c /r p l l ( % ) collision per 1 year (num) 10 s 30 s 60 s 120 s 180 s 300 s 600 s 1800 s fig. 10 power comparison between dldc-mac and rpll protocol for one year period in terms of number of collisions the achieved saving in power consumption justifies the usage of rpll in respect to dldc-mac protocol. rpll rendezvous protocol for long-living sensor nod 101 7. conclusion power saving is a crucial issue in battery powered sns. with the aim to achieve correct in-time wake-up of sns we have implemented some modifications in respect to dldc-mac rendezvous protocol. the principle of operation of the proposed rpll protocol is based on usage of duty cycling technique. it uses pseudo-asynchronous scheme and is preferable for wsn applications that are typical for environment monitoring. the modification in respect to dldc-mac protocol competes-in of involving a unique id for each sn within wsn, which provides us with decreasing activities during the registration process and avoiding collisions of newly joined sns. the performance of the proposed protocol which relate to: a) the maximal number of sns within wsn in terms of a dc factor; b) the maximal duration of a beacon period in terms of simultaneously active sns; c) the energy consumption of sn in terms of sn`s quartz oscillator instability; and d) the energy consumption of sn in terms wsn scanning period in order to detect newly active sns, have been estimated. according to the obtained results, for a defined beacon period and selected sns quartz oscillator instability, wsn designer can exactly determine the minimal power consumption of sn, and thus extend its lifetime. the power consumption of a sn which implements a rpll protocol in respect to sn which uses dldc-mac protocol is always lower. the achieved power saving, for one year working period, is within the range from 0.01 % (tbp = 1 s and nc = 180) up to 86.43 % (tbp =1800 s and nc = 180). the obtained results justify the involved modifications in the rpll protocol. acknowledgement: this research was sponsored in part by the serbian ministry of science and technological development, project no. tr-32009 "low-power reconfigurable fault-tolerant platforms". the authors would like to thank to anonymous reviewers for their useful and constructive suggestions, mainly intended to improve the quality of this paper. references [1] raghunathan v., ganerival s., srivastava m., "emerging techniques for long lived wireless sensor networks", ieee communication magazine, vol. 44, no. 4, pp. 108-114, 2006 [2] p. k. dutta, d. e. culler, "system software techniques for low power operation in wireless sensor networks", in proceedings of the iccad`05, san jose, california, usa, 2005, pp. 925-932 [3] m. riduan ahmad, eryk dutkiewicz and xiaojing huang (2011). "a survey of low duty cycle mac protocols in wireless sensor networks", emerging communications for wireless sensor networks, (ed.), isbn: 978-953-307-082-7, intech, available from: http://www.intechopen.com/books/emergingcommunications-for-wirelesssensor-networks/a-survey-of-low-duty-cycle-mac-protocols-in-wirelesssensor-networks, acc.01.11.2013 [4] en yi lin, a comprehensive study of power-efficient rendezvous schemes for wireless sensor networks, phd thesis, university of california, berkeley, 2005 [5] en-yi a. lin, jan m. rabaey, adam wolisz, "power-efficient rendez-vous schemes for dense wireless sensor networks", in proceeding of icc2004, paris, france, june, 2004, vol.7, pp. 3769 3776 [6] d. christmann, r. gotzhein, m. krämer, m. winkler, "flexible and energy-efficient duty cycling in wireless networks with macz", proc. 10th annual int new technologies of distributed systems (notere) conf, ieee, tozeur, tunisia, 2010, pp. 121-128 [7] e.serpedin, q.m.chaudhari, synchronization in wsn: parameter estimation, performance benchmarks and protocols, cambridge university press, new york, 2009 [8] m.kosanovic, m.stojcev, "energy efficient rendezvous protocol for wireless sensor networks, 2nd mediterranean conference on embedded computing", meco – 2013, budva, montenegro, pp. 215-218 http://www.intechopen.com/books/emerging-communications-for-wirelesssensor-networks/a-survey-of-low-duty-cycle-mac-protocols-in-wireless-sensor-networks http://www.intechopen.com/books/emerging-communications-for-wirelesssensor-networks/a-survey-of-low-duty-cycle-mac-protocols-in-wireless-sensor-networks http://www.intechopen.com/books/emerging-communications-for-wirelesssensor-networks/a-survey-of-low-duty-cycle-mac-protocols-in-wireless-sensor-networks http://vs.informatik.uni-kl.de/people/christmann/ http://vs.informatik.uni-kl.de/people/gotzhein/ http://vs.informatik.uni-kl.de/people/kraemer/ 102 m. r. kosanović, m. k. stojĉev [9] m.brzozowski, k.piotrowski, p.langendoerfer, "a cross-layer approach for data replication and gathering in decentralized long-living wireless sensor networks", isads 2009, the 9th international symposium on autonomous decentralized system, athens 2009, pp.49-54 [10] giuseppe anastasi, mario di francesco, marco conti, andrea passarella, how to prolong the lifetime of wireless sensor networks, chapter 6 in handbook on mobile ad hoc and pervasive communications, l.t. yang and m.k. denko, editors, american scientific publishers, december 2006, http://info.iet.unipi.it/~anastasi/papers/yang.pdf, acc.10.11.2013 [11] g.anastasi, m.conti, m.d.francesco, a.passarelle, "energy conservation in wireless sensor networks: a survey", ad hoc networks 7 (2009) 537–568, http://info.iet.unipi.it/~anastasi/papers/ adhoc08.pdf, acc.10.02.2013 [12] wei ye, heidemann j., estrin d., "an energy-efficient mac protocol for wireless sensor networks", in proceedings of ieee infocom 2002 (june 2002), new york, usa, vol. 3, pp. 1567–1576 [13] zvi rosberg, ren ping liu, tuan le dinh, yi fei dong, sanjay jha, "statistical reliability for energy efficient data transport in wireless sensor networks", wireless netw (2010) 16, pp.1913-1927, published on line by springer science + business media, http://www.cse.unsw.edu.au/~ydon/publications/winet. pdf, acc. 20.01.2013 [14] m. kosanovic, m. stojcev, "delay compensation method for time synchronization in wireless sensor networks",10 telsiks ieee, nis 2011, vol.2 pp.623-629 [15] anton ageev, time synchronization and energy efficiency in wireless sensor networks, disi university of trento, italy, phd thesis, march 2010 [16] texas instruments datasheets, msp430f123 16-bit ultra-low-power microcontroller, 8kb flash, 256b ram, usart, comparator , http://www.ti.com/product/msp430f123, acc.15.02.2013 [17] gianfranco pistoia, battery operated devices and systems, elsevier b.v., amsterdam, the netherlands, 2009 http://info.iet.unipi.it/~anastasi/papers/yang.pdf http://info.iet.unipi.it/~anastasi/papers/%20adhoc08.pdf http://www.cse.unsw.edu.au/~ydon/publications/winet.pdf http://www.cse.unsw.edu.au/~ydon/publications/winet.pdf http://www.ti.com/product/msp430f123 instruction facta universitatis series: electronics and energetics vol. 30, no 4, december 2017, pp. 639 646 doi: 10.2298/fuee1704639d exact analytical solutions of continuously graded models of flat lenses based on transformation optics mariana dalarsson 1 , raj mittra 2 1 department of physics and electrical engineering, linnaeus university, växjö, sweden 2 emc laboratory, department of electrical engineering, the pennsylvania state university, university park, pa, usa abstract. we present a study of exact analytic solutions for electric and magnetic fields in continuously graded flat lenses designed utilizing transformation optics. the lenses typically consist of a number of layers of graded index dielectrics in both the radial and longitudinal directions, where the central layer in the longitudinal direction primarily contributes to a bulk of the phase transformation, while other layers act as matching layers and reduce the reflections at the interfaces of the middle layer. such lenses can be modeled as compact composites with continuous permittivity (and if needed) permeability functions which asymptotically approach unity at the boundaries of the composite cylinder. we illustrate the proposed procedures by obtaining the exact analytic solutions for the electric and magnetic fields for one simple special class of composite designs with radially graded parameters. to this purpose we utilize the equivalence between the helmholtz equation of our graded flat lens and the quantummechanical radial schrödinger equation with coulomb potential, furnishing the results in the form of kummer confluent hypergeometric functions. our approach allows for a better physical insight into the operation of our transformation optics-based graded lenses and opens a path toward novel designs and approaches. key words: flat lenses, graded permittivity and permeability models, transformation optics, exact analytical solutions 1. introduction flat lenses designs based on transformation optics (to) and using left-handed (negative refractive index) metamaterials have been discussed in a number of recent publications ([1], [2]). basically, using the electromagnetic design, one is able to design a lens with the full functionality of a conventional lens, but compressed in space and possibly having additional functionalities. it is possible to do this in a wide range of operating frequencies, including microwave, terahertz and optical. however, the metamaterial composites proposed for such designs may be difficult to manufacture, received april 4, 2017; received in revised form may 21, 2017 corresponding author: mariana dalarsson department of physics and electrical engineering, linnaeus university, 351 95växjö, sweden (e-mail: mariana.dalarsson@lnu.se) 640 m. dalarsson, r. mittra especially when the required values of relative magnetic permeability and relative dielectric permittivity are less than unity, as argued in [3]. in order to avoid problems with fabrication of metamaterials with suitable values of magnetic permeabilities, it is possible to set the value of and to vary only to create the desired refractive index of √ , but at the cost of decreasing the efficiency ofthe composite lenses [4]. in [4] a plano-concave lens has been designed with metamaterials to obtain a gain above 13 db in the frequency band between 10 and 12 ghz. such a lens has a narrow bandwidth typical for a majority of designs using metamaterials. the conventional flat lens designs, using ray optics (ro) approach, avoid the abovementioned difficulties with to designs, but they do not have the same flexibility to control the phase and amplitude of the fields within the lens structure. an approach to remedy the drawbacks of both to and ro designs is the field manipulation (fm) method, described in [3]. the studies of the flat-lenses design approaches mentioned above, however, generally require a direct numerical approach in solving the field equations. in the present paper, we use an alternative approach and investigate the possibilities to identify and study some special designs that allow for the exact solutions of the field equations analogous to those obtained in studying various planar and cylindrical metamaterial structures [5] [11]. the main motive for pursuing analytical solutions of the problems involving flat lenses is that the detailed knowledge of analytical structure of the field solutions may provide additional insights leading to improved or even entirely new designs. we apply our approach to a specific case of a gradient-index (grin) flat lens. 2. problem formulation and field equations the graded index (grin) approach to the design of a flat lens is based on the concept of field transformation, similar to that proposed by luneburg for the design of spherical lenses [12]. similarly to luneburg's approach, a desired field distribution in the output port (the exit aperture) is specified and the medium parameters of the intervening medium are determined such that the given field distribution in the input port (input aperture) is transformed to the desired field distribution in the exit plane. in many practical cases, this can be performed by tracing rays through a designed inhomogeneous medium. the design parameters of the lens include center frequency, focal length, thickness, and gain. the physical size (diameter d) of the lens will depend on the gain and the radial model function (e.g. radial dependence of the permittivity). one typical design layout is shown in fig. 1. the design goal is to maximize the performance of the lens, and for that purpose we want to realize the desired phases on the face b of the lens while simultaneously maximizing the transmission coefficient over a broad frequency band. the problem is typically solved using a multi-layer structure, with the desired phase at the center frequency and a transmission coefficient as close to one as possible over abroad frequency band for each of the ten rings shown in fig. 1. in fig. 1 the following symbols are used: t – thickness of the lens f – focal length of the lens i – phase of the plane wave incident from the left on the face a a, b – the notation for the two faces (a and b) of the lens exact analytical solutions of continuously graded models of flat lenses 641 fig. 1 flat grin lens. left: cross section (side view) of the lens showing layers; right: top view of the lens the middle layer perform a majority of the phase transformation, while the other layers act as matching layers to maximize the transmission of the waves incident from either side (graded antireflection structure). in the present approach we model the discrete structure shown in fig. 1 by a cylindrical composite structure with the electric permittivity and permeability being continuous spatial functions ( ) ( ), ( ) ( ) (1) where ( ) is the set of cylindrical coordinates and the structure is centered around the z-axis. we consider a case of te-wave propagation through the structure, so that the electric and magnetic field are ( ) , ( ) ( ) (2) here we note that the choice of te-waves is by no means a restriction, and writing an analogous procedure for tm-waves is straightforward. in the case of te-waves as described by (2), maxwell equations for the scalar field components become ( ) , ( ) ( ) (3) ( ) (4) substituting equations (3) into (4), we obtain helmholtz equation for the electric field ( ) ( ) ( ) ( ) ( ) ( ) ( ) (5) or introducing a new function ( ) ( ) ( ) ( ) (6) where . the equation (5), or (6), is quite general. after choosing suitable model functions ( ) ( ) ( )and ( ) ( ) ( ), if we can determine the analytic solution for the electric field ( ), then using (3) we can readily obtain the magnetic field components ( ) and ( ) as well. the challenge is therefore to find suitable model functions ( ) ( ) ( ) and ( ) ( ) ( ) that provide 642 m. dalarsson, r. mittra a reasonable resemblance of actual design structures like the one described in table 1 and fig. 2 of [3]. 3. analytics of a simple model of composite designs at this stage, we need to restrict the form of the functions (1) to allow for a suitable analytical solution. let us here consider a simple model where ( ) ( ) ( ) ( ( ) ) , ( ) (7) in (7) we require that at large distances ( ) the composite permittivity ( ) becomes unity, which describes the gradual transition to the free space outside the structure. this is simultaneously the condition for the antireflective behavior of the lens surface and thus the maximum input electromagnetic flux. utilizing (7) and separating variables using the ansatz ( ) ( ) ( ) ( ), the equation (6) gives rise to two ordinary differential equations for the two functions, ( ) and ( ), as follows ( ) (8) [ ( ) ] (9) as indicated in (8), the solutions for ( ) are simple plane waves propagating in the z-direction, and we only need to solve equation (9). introducing ( ) √ ( ), the equation (9) becomes * ( ) + (10) let us now introduce two constants , , whereby the equation (10) becomes the well-known radial schrödinger equation * ( ) ( ) + (11) where we notice the following analogy between the parameters of the electromagnetic equation (11) and the parameters of the usual quantum-mechanical radial schrödinger equation ( ) ( ) (12) since we require that ( ) when , the simplest model that we can adopt is the coulomb potential ( ) ( ) (13) where α is a constant that must be chosen to provide the best fit to the presented graded model. such a choice of ( ) introduces an unphysical singularity of the permittivity function for , but with a proper choice of boundary conditions it can provide a sufficiently accurate model of the realistic graded permittivity structures. substituting ( ) from (13) into (11) we obtain * ( ) + (14) exact analytical solutions of continuously graded models of flat lenses 643 the equation (14) has an exact analytical solution ( ) ( ) ( ) (15) where ( ) ( ) and ( ) ( ) are whittaker functions that can be expanded in terms ofkummer confluent hypergeometric functions f1 and u. based on the asymptotic behavior of the whittaker functions for and , and the physical requirements on the behavior of the electric field functions ( ), we see that we must choose c2 = 0, such that for , we have ( ) √ ( ) √ ( ) (16) and for waves propagating in the positive z-direction, we can write ( ) ( ) ( ) ( ) (17) it is here convenient to express the result (17) in terms of kummer confluent hypergeometric functions, in order to further clarify the mathematical properties of the electric field intensity function. thus, we finally obtain ( ) ( ) ( ) (18) the result (18) for the electric field intensity function ( ) refers to the φcomponent of the electric field due to the assumed te-wave as defined in (2). it should however be noted that the assumption of the te-wave is by no means limiting the generality of the results obtained in the present paper. the case of the tm-wave is fully analogous to the case of the te-wave, and the only difference is that the result (18) is then valid for the magnetic field intensity function ( ) which refers to the φcomponent of the magnetic field. the electric field components ( ) and ( ) are then readily obtained using the tm-wave analogues of the equations (3). the choice of the te-wave in the present paper was made for illustration purposes. following the approach in [3], the relative permittivities are here assumed to be real functions and no dielectric losses are taken into account. it should however be noted that there is nothing in the present theory that limits the values of the relative permittivities to be real. it is fully feasible to use the present model with complex relative permittivities as well. this will be the subject of our future studies. 4. study of a specific numerical case let us now turn to the specific case of a grin lens studied in [3], where we have a structure with radially graded permittivities for the middle layer, as listed in table 1. table 1 radially graded permittivities of the middle layer of a grin lens. layer 1 2 3 4 5 6 7 8 9 10 ̅ ( ) 1.5875 4.7625 7.9375 11.1125 14.2875 17.4625 20.6375 23.8125 26.9875 30.1625 ( ̅) 25.5 24.5 22.3 18.5 14.55 10.5 7.65 5.5 3.5 1.65 644 m. dalarsson, r. mittra using the model function (7) with (13), we obtain the fitting graph as shown in fig. 2, where we have chosen the parameter α to be equal to 0.36. fig. 2 fitting of grin lens relative permittivity data using coulomb function with . the cross section of the solution (18) for a constant z is shown in fig. 3. fig. 3 cross section of the electric field function e(r, z) for given constant z (z = 0), with c1 = 1, f = 30 ghz, k = 2π f/c and kz = 0.8 k. exact analytical solutions of continuously graded models of flat lenses 645 finally, a three dimensional plot of the solution (18) is shown in fig. 4. fig. 4 electric field function e(r, z). from fig. 4 we readily see how the wave is radially focused while moving along the zdirection, as expected. the size of the wave amplitudes is not normalized with respect to any starting position, and does not reflect any specific initial electric field strength. even though the coulomb function is far from the optimum fit for the grin lens data, the obtained results can be used to describe simply and sufficiently accurately the chosen lens. it should be noted here that our choice of the model function (coulomb function) has been made based on the well known analytical solutions for that function. there is a number of other functions that also allow the exact analytic solutions of the problem at hand, in particular if the model is extended to allow the graded permeability of the lens layers. the studies of other models involving such more accurate model functions will be the subject of our coming papers. 646 m. dalarsson, r. mittra 5. conclusions the possibility to find exact analytic solutions for the electric and magnetic fields in continuously graded flat lenses has been studied. the flat lenses are modeled as compact composites with continuous permittivity and permeability functions which asymptotically approach unity at the boundaries of the composite cylinder. in order to illustrate the present approach, we obtain an exact analytic solution for the electric field intensity for an fm composite lens with constant magnetic permeability ( z) and radially dependent dielectric permittivity. in our coming research efforts, we see the need to look for the possible models with exact analytical (or at least perturbational and/or wkb) solutions for graded profiles of some more complex flat-lens designs studied in literature. references [1] r. yang, w. tang, and y. hao, "a broadband zone plate lens from transformation optics", optics express, vol. 19, no. 13, pp. 12348 12355, 2011. [2] d. a. roberts, n. kundtz, and d. r. smith, "optical lens compression via transformation optics", optics express, vol. 17, no. 19, pp. 16535 – 16542, 2009. [3] s. jain, m. abdel-mageed and r. mittra, "flat-lens design using field transformation and its comparison with those based on transformation optics and ray optics", ieee antennas and wireless propagation letters, vol. 12, pp. 777 – 780, 2013. [4] t. driscoll, g. lipworth, j. hunt, n. landy, n. kundtz, d. n. basov, and d. r. smith, "performance of a threedimensional transformation-optical flattened luneburg lens", optics express, vol. 20, no. 12, pp. 13264 13273, 2012. [5] m. dalarsson and p. tassin, "analytical solution for wave propagation through a graded index interface between a right-handed and a left-handed material", optics express, vol. 17, no. 8, pp. 6747 – 6752, 2009. [6] m. dalarsson, m. norgren, and z. jaksic, "lossy gradient index metamaterial with sinusoidal periodicity of refractive index: case of constant impedance throughout the structure", journal of nanophotonics, vol. 5, no. 1, pp. 051804-1 – 8, 2011. [7] m. dalarsson, m. norgren, n. doncov, and z. jaksic, "lossy gradient index transmission optics with arbitrary periodic permittivity and permeability and constant impedance throughout the structure," journal of optics, vol. 14, no. 6, pp. 065102-1 – 7, 2012. [8] m. dalarsson, m. norgren, t. asenov, n. doncov, and z. jaksic, "exact analytical solution for fields in gradient index metamaterials with different loss factors in negative and positive refractive index segments," journal of nanophotonics, vol. 7, no. 1, 073086-1 – 13, 2013. [9] m. dalarsson, m. norgren, t. asenov, and n. doncov, "arbitrary loss factors in the wave propagation between rhm and lhm media with constant impedance throughout the structure", pier, vol. 137, pp. 527 – 538, 2013. [10] m. dalarsson, m. norgren, and z. jaksic, "exact analytical solution for fields in a lossy cylindrical structure with linear gradient index metamaterials", pier, vol. 151, pp. 109–117, 2015. [11] m. dalarsson, and z. jaksic, "exact analytical solution for fields in a lossy cylindrical structure with hyperbolic tangent gradient index metamaterials", optical and quantum electronics, vol. 48, no. 3, pp. 1–6, 2016. [12] r. k. luneburg, "mathematical theory of optics", university of california press, berkeley, 1964. 641.indd facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 77 84 doi: 10.2298/fuee1501077m facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 101 125 the use of fractional calculus for the optimal placement of electronic components on a linear array gilbert de mey1, mariusz felczak2 and bogus�law wiȩcek2 1university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium 2insitute of electronics, technical university of �lódź, ul. wolczańska 211-215, 90-924 �lódź, poland abstract: cooling of heat dissipating components has become an important topic in the last decades. sometimes a simple solution is possible, such as placing the critical component closer to the fan outlet. on the other hand this component will heat the air which has to cool the other components further away from the fan outlet. if a substrate bearing a one dimensional array of heat dissipating components, is cooled by forced convection only, an integral equation relating temperature and power is obtained. the forced convection will be modelled by a simple analytical wake function. it will be demonstrated that the integral equation can be solved analytically using fractional calculus. keywords: heat transfer, placement, convective cooling, thermal wake, integral equation, fractional calculus. 1 introduction heat transfer in electronics and microelectronics has become an important topic. the reason is quite simple: the heat dissipation in electronic components is increasing. integrated circuits dissipating 100 watts are no longer manuscript received november 24, 2014 corresponding author: gilbert de mey department of electronics, university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium (e-mail: demey@elis.ugent.be) 1 received november 24, 2014 corresponding author: gilbert de mey department of electronics, university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium (e-mail: demey@elis.ugent.be)) facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 101 125 the use of fractional calculus for the optimal placement of electronic components on a linear array gilbert de mey1, mariusz felczak2 and bogus�law wiȩcek2 1university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium 2insitute of electronics, technical university of �lódź, ul. wolczańska 211-215, 90-924 �lódź, poland abstract: cooling of heat dissipating components has become an important topic in the last decades. sometimes a simple solution is possible, such as placing the critical component closer to the fan outlet. on the other hand this component will heat the air which has to cool the other components further away from the fan outlet. if a substrate bearing a one dimensional array of heat dissipating components, is cooled by forced convection only, an integral equation relating temperature and power is obtained. the forced convection will be modelled by a simple analytical wake function. it will be demonstrated that the integral equation can be solved analytically using fractional calculus. keywords: heat transfer, placement, convective cooling, thermal wake, integral equation, fractional calculus. 1 introduction heat transfer in electronics and microelectronics has become an important topic. the reason is quite simple: the heat dissipation in electronic components is increasing. integrated circuits dissipating 100 watts are no longer manuscript received november 24, 2014 corresponding author: gilbert de mey department of electronics, university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium (e-mail: demey@elis.ugent.be) 1 facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 101 125 the use of fractional calculus for the optimal placement of electronic components on a linear array gilbert de mey1, mariusz felczak2 and bogus�law wiȩcek2 1university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium 2insitute of electronics, technical university of �lódź, ul. wolczańska 211-215, 90-924 �lódź, poland abstract: cooling of heat dissipating components has become an important topic in the last decades. sometimes a simple solution is possible, such as placing the critical component closer to the fan outlet. on the other hand this component will heat the air which has to cool the other components further away from the fan outlet. if a substrate bearing a one dimensional array of heat dissipating components, is cooled by forced convection only, an integral equation relating temperature and power is obtained. the forced convection will be modelled by a simple analytical wake function. it will be demonstrated that the integral equation can be solved analytically using fractional calculus. keywords: heat transfer, placement, convective cooling, thermal wake, integral equation, fractional calculus. 1 introduction heat transfer in electronics and microelectronics has become an important topic. the reason is quite simple: the heat dissipation in electronic components is increasing. integrated circuits dissipating 100 watts are no longer manuscript received november 24, 2014 corresponding author: gilbert de mey department of electronics, university of ghent, sint pietersnieuwstraat 41, 9000 ghent, belgium (e-mail: demey@elis.ugent.be) 1 78 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array 79 2 g. de mey, m. felczak and b. wiȩcek exceptional. if you buy a pentium processor, you will receive the processor already mounted on a printed circuit board with the cooling fin and the fan. otherwise the company cannot guarantee that the device will work at all. some textbooks on heat transfer even include a chapter on ”electronics cooling” [1]. the most obvious way to cool electronic components is to mount them on a cooling fin which is cooled either by natural convection or by forced convection if a fan is blowing. normally, at first an electronic design is made and once this has been finished the cooling problems have to be solved. a few years ago, designers seem to be convinced that one should take the cooling problem into account from the beginning, i.e. during the electronic design phase. let us give a simple example: you are designing a printed circuit board and one component on this board is dissipating a lot of heat. the cooling fan is blowing from the left. do you put this component on the left, on the right, or somewhere in the middle? if you put this component on the left the cooling with be quite efficient due to the close presence of the fan. but furtheron, the air behind this component, the so called wake, will be warmed up. so, the other components will be warmed up by the warm air blowing. this can give rise to malfunctioning of the circuit if temperature sensitive components are involved. alternatively you may decide to put the heat dissipating component on the right side of the printed circuit board. but the cooling air coming from the fan has first to cross over the printed circuit board before reaching the heat source. this gives rise to friction and hence a reduction of the air speed in the surroundings of the pcb. so the component will not be cooled so effectively. if you put the heat source in the middle you have a mix of the problems just mentioned. there is no simple answer to that simple question. the only solution is to make an electrothermal design from the very beginning. a network simulator like spice should not only calculate voltages and currents but also temperatures and power dissipations. in this paper we will deal with a simple problem depicted in fig.1. it � � � �� � � � �� � � � � � � � t1 t2 t3 t4 t5 t6 p1 p2 p3 p4 p5 p6 fig. 1: linear layout of integrated circuits. shows a printed circuit board with 6 integrated circuit, in a linear array. the 78 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array 79 2 g. de mey, m. felczak and b. wiȩcek exceptional. if you buy a pentium processor, you will receive the processor already mounted on a printed circuit board with the cooling fin and the fan. otherwise the company cannot guarantee that the device will work at all. some textbooks on heat transfer even include a chapter on ”electronics cooling” [1]. the most obvious way to cool electronic components is to mount them on a cooling fin which is cooled either by natural convection or by forced convection if a fan is blowing. normally, at first an electronic design is made and once this has been finished the cooling problems have to be solved. a few years ago, designers seem to be convinced that one should take the cooling problem into account from the beginning, i.e. during the electronic design phase. let us give a simple example: you are designing a printed circuit board and one component on this board is dissipating a lot of heat. the cooling fan is blowing from the left. do you put this component on the left, on the right, or somewhere in the middle? if you put this component on the left the cooling with be quite efficient due to the close presence of the fan. but furtheron, the air behind this component, the so called wake, will be warmed up. so, the other components will be warmed up by the warm air blowing. this can give rise to malfunctioning of the circuit if temperature sensitive components are involved. alternatively you may decide to put the heat dissipating component on the right side of the printed circuit board. but the cooling air coming from the fan has first to cross over the printed circuit board before reaching the heat source. this gives rise to friction and hence a reduction of the air speed in the surroundings of the pcb. so the component will not be cooled so effectively. if you put the heat source in the middle you have a mix of the problems just mentioned. there is no simple answer to that simple question. the only solution is to make an electrothermal design from the very beginning. a network simulator like spice should not only calculate voltages and currents but also temperatures and power dissipations. in this paper we will deal with a simple problem depicted in fig.1. it � � � �� � � � �� � � � � � � � t1 t2 t3 t4 t5 t6 p1 p2 p3 p4 p5 p6 fig. 1: linear layout of integrated circuits. shows a printed circuit board with 6 integrated circuit, in a linear array. the the use of fractional calculus for the optimal placement of electronic... 3 circuits dissipate powers p1; p2, ... giving rise to a temperature distribution t1, t2,... the fan is at the left side and provides a uniform flow over the circuit. if only the first circuit dissipates heat, not only will t1 rise, but the downstream airflow (thermal wake) will be heated up so that the other components will be also heated even when p2 = ...p6 = 0. when only the rightmost component dissipates power (p6 �= 0), the 5 other components will not be warmed up as they are in an upstream position. by using a mathematical approximation for the wake function, i.e. the temperature rise caused by one heat dissipating component in all the other components located downstream, an integral equation will be set up for the temperature distribution. this equation will be solved by fractional calculus as will be outlined further on in this paper. 2 a short introduction to fractional calculus fractional calculus is not so well known at the moment. therefore a very short introduction will be given here. what is a semi derivative of a function. in simple words, it is a mathematical operator and if you apply twice a semiderivative, you get a well known classical derivative. in the last decennia, it has been found that several physical phenomena can be described by differential equations involving fractional derivatives [2]. also thermal diffusion problems can give rise to equations using fractional derivatives [3]. mostly used is the so called semi derivative in the time domain defined by: ( d dt )1/2 f(t) = 0d 1/2 t f(t) = 1√ π d dt ∫ t 0 f(t′)dt′√ t − t′ . (1) applying two times the semiderivative (1), is nothing else than the classical derivative d/dt. the most straightforward way to interpret (1) is to transform (1) into the laplace domain. one gets: l[ 0d 1/2 t f(t)] = √ sf (s). (2) where s is the laplace variable and f (s) = l[f(t)]. a semiderivative is just a multiplication by √ s. hence, two consecutive semiderivations are then represented by a multiplication by √ s √ s = s, which corresponds to a time derivative in the laplace domain. a fractional derivative of order α (0 < α < 1) corresponds to a multiplication by sα in the laplace domain. 80 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array 81 4 g. de mey, m. felczak and b. wiȩcek the second notation used in (1) is preferred because the subscript ”0” in front of the operator d indicates that the integration should start from t = 0, which is common for the analysis of time dependent problems. generally, a fractional derivative of order α is then defined by: ( d dt )α f(t) = 0d α t f(t) = 1 γ(1 − α) d dt ∫ t 0 f(t′)dt′ (t − t′)α . (3) where γ is the euler gamma function. in the laplace domain this corresponds to a multiplication by sα. integrating (3) with respect to time gives: ( d dt ) −1+α f(t) = 0d −1+α t f(t) = 1 γ(1 − α) ∫ t 0 f(t′)dt′ (t − t′)α . (4) for α < 1, (4) can be considered as a fractional integration of order 1 − α. in the laplace domain this is equivalent to a multiplication by 1/s1−α. 3 integral equation for the thermal wake problem in present day electronic and microelectronic components, the power density is such that the temperatures can attain quite high values, affecting seriously the overall circuit reliabilities [4,5]. designing a circuit is no longer possible if the heat removal from chip to the ambient is not taken into account. not only the heat transfer by conduction from the semiconductor chip to the package, but also the convective heat transfer is modelled. the latter one is done by solving the navier stokes equations in order to model the flow around the packages and cooling fins [6–8]. on electronic substrates components are usually placed according to regular arrays. as a consequence, in case the substrate is cooled by forced convection caused by fan blowing, a component located in x′ will heat the air used to cool all the remaining components located downstream x > x′ (fig.2). in case the components have different power dissipations, interchanging components can give rise to a more uniform temperature distribution without excessive hot spots. it should be mentioned here that a high operating temperature of just one single component will reduce the reliability of the whole circuit. such a problem can be attacked by computational fluid dynamics modelling. this requires the numerical solution of the navier stokes equations which is a difficult task from a numerical point of view. any time some components interchange their positions a new cfd simulation has to be carried 80 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array 81 4 g. de mey, m. felczak and b. wiȩcek the second notation used in (1) is preferred because the subscript ”0” in front of the operator d indicates that the integration should start from t = 0, which is common for the analysis of time dependent problems. generally, a fractional derivative of order α is then defined by: ( d dt )α f(t) = 0d α t f(t) = 1 γ(1 − α) d dt ∫ t 0 f(t′)dt′ (t − t′)α . (3) where γ is the euler gamma function. in the laplace domain this corresponds to a multiplication by sα. integrating (3) with respect to time gives: ( d dt ) −1+α f(t) = 0d −1+α t f(t) = 1 γ(1 − α) ∫ t 0 f(t′)dt′ (t − t′)α . (4) for α < 1, (4) can be considered as a fractional integration of order 1 − α. in the laplace domain this is equivalent to a multiplication by 1/s1−α. 3 integral equation for the thermal wake problem in present day electronic and microelectronic components, the power density is such that the temperatures can attain quite high values, affecting seriously the overall circuit reliabilities [4,5]. designing a circuit is no longer possible if the heat removal from chip to the ambient is not taken into account. not only the heat transfer by conduction from the semiconductor chip to the package, but also the convective heat transfer is modelled. the latter one is done by solving the navier stokes equations in order to model the flow around the packages and cooling fins [6–8]. on electronic substrates components are usually placed according to regular arrays. as a consequence, in case the substrate is cooled by forced convection caused by fan blowing, a component located in x′ will heat the air used to cool all the remaining components located downstream x > x′ (fig.2). in case the components have different power dissipations, interchanging components can give rise to a more uniform temperature distribution without excessive hot spots. it should be mentioned here that a high operating temperature of just one single component will reduce the reliability of the whole circuit. such a problem can be attacked by computational fluid dynamics modelling. this requires the numerical solution of the navier stokes equations which is a difficult task from a numerical point of view. any time some components interchange their positions a new cfd simulation has to be carried the use of fractional calculus for the optimal placement of electronic... 5 fig. 2: temperature profile downstream a heating component (thermal wake function) out. this has to be repeated till the optimum layout has been obtained. it is quite obvious that this method requires a huge amount of computing time so that it is no longer of practical use during the design phase of a circuit. in this contribution the thermal wake function approach will be presented. it gives rise to a one dimensional integral equation which can be solved with a minimum of computational effort. finding the optimal position of the individual components can be quickly performed during the design phase of a circuit. by definition, the thermal wake function g is the temperature distribution of the downstream components caused by single component having a unit heat dissipation. all downstream component should not have any heat production then. several authors have studied the thermal wake function properties [9,10]. from experimental data and the own measurements of the authors [10], it was found that the thermal wake function g can be very well approximated by (fig.1): g(x − x′) = 1 (x − x′)p if x > x′, g = 0 if x < x′ (5) if the heat production of a linear array of components can be described by a continuous function q(x), one gets the following equation for the temperature distribution: t (x) = ∫ x 0 q(x′)g(x − x′)dx′ = ∫ x 0 q(x′)dx′ (x − x′)p (6) finding the optimal placement is now finding the optimal function q(x). 82 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array 83 6 g. de mey, m. felczak and b. wiȩcek usually a uniform temperature t (x) = t0 is considered optimal because all components will then have equal reliability if they are of course identical. 4 solution with fractional calculus the integral equation (6) has been solved analytically for a uniform temperature distrbution t0. a rather artificial method was used based on a particular property of the euler beta function [10, 11]. for a non constant temperature this method cannot be used. a uniform temperature distribution t (x) = t0 is often considered as the optimal situation. if all components do not have the same degradation rate as a function of temperature a non uniform temperature distribution can then considered as the optimal situation. the problem is now to find the power q(x) for the given t (x). this problem will be solved now using fractional calculus. the equations (3) and (4) being time dependent, the causality principle is then automatically taken into account. however, the fact that a heat source can only warm up the downstream part, can be interpreted as the causality principle in the space domain. hence, by comparing (4) and (5), the equation (6) can be rewritten as: t (x) = γ(1 − p) 0d −1+p x q(x) (7) if t (x) is given the solution q(x) is immediatly found to be: q(x) = 1 γ(1 − p) 0d 1−p x t (x) = 1 γ(1 − p)γ(p) d dx ∫ x 0 t (x′)dx′ (x − x′)1−p (8) taking into account that [10]: γ(1 − p)γ(p) = π sinπp (9) one obtains the general solution: q(x) = sinπp π d dx ∫ x 0 t (x′)dx′ (x − x′)1−p (10) in case one wants to get a uniform temperature t (x) = t0, the heat production q(x) turns out to be: q(x) = t0 sinπp π d dx ∫ x 0 dx′ (x − x′)1−p = t0 sinπp π 1 x1−p (11) 82 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array 83 6 g. de mey, m. felczak and b. wiȩcek usually a uniform temperature t (x) = t0 is considered optimal because all components will then have equal reliability if they are of course identical. 4 solution with fractional calculus the integral equation (6) has been solved analytically for a uniform temperature distrbution t0. a rather artificial method was used based on a particular property of the euler beta function [10, 11]. for a non constant temperature this method cannot be used. a uniform temperature distribution t (x) = t0 is often considered as the optimal situation. if all components do not have the same degradation rate as a function of temperature a non uniform temperature distribution can then considered as the optimal situation. the problem is now to find the power q(x) for the given t (x). this problem will be solved now using fractional calculus. the equations (3) and (4) being time dependent, the causality principle is then automatically taken into account. however, the fact that a heat source can only warm up the downstream part, can be interpreted as the causality principle in the space domain. hence, by comparing (4) and (5), the equation (6) can be rewritten as: t (x) = γ(1 − p) 0d −1+p x q(x) (7) if t (x) is given the solution q(x) is immediatly found to be: q(x) = 1 γ(1 − p) 0d 1−p x t (x) = 1 γ(1 − p)γ(p) d dx ∫ x 0 t (x′)dx′ (x − x′)1−p (8) taking into account that [10]: γ(1 − p)γ(p) = π sinπp (9) one obtains the general solution: q(x) = sinπp π d dx ∫ x 0 t (x′)dx′ (x − x′)1−p (10) in case one wants to get a uniform temperature t (x) = t0, the heat production q(x) turns out to be: q(x) = t0 sinπp π d dx ∫ x 0 dx′ (x − x′)1−p = t0 sinπp π 1 x1−p (11) the use of fractional calculus for the optimal placement of electronic... 7 which is exactly the same solution found by a rather artificial method [9]. the use of fractional calculus offers us a general solution which can be used for any temperature function t (x). 5 conclusion it has been shown that fractional calculus can be succesfully used for some particular problems in electronics. we treated the placement problem of components on a one dimensional array, using the prescribed temperature distribution as the optimisation criterion. acknowledgments m. felczak and b. wiȩcek thank the ministry of science and education of poland for the finantial support (project nr. 3t11b02429). references [1] y. cengel, heat transfer. mc graw hill, boston, 2003, no. chapter 15. [2] i. sokolov, j. klafter, and a. blumen, “fractional kinetics,” physics today, vol. 55, no. 11, pp. 48–54, 2002. [3] r. magin, s. boregowda, and c. deodhar, “modelling of pulsating peripheral bioheat transfer using fractional calculus and constructal theory,” international journal of design and nature, vol. 1, no. 1, pp. 18–33, 2007. [4] a. m. anderson and r. j. moffat, “the adiabatic heat transfer coefficient and the superposition kernel function: part i: data for arrays of flatpacks for different flow conditions,” journal of electronic packaging, vol. 114, no. 1, pp. 14–21, 1992. [5] ——, “the adiabatic heat transfer coefficient and the superposition kernel function: part ii: modeling flatpack data as a function of channel turbulence,” journal of electronic packaging, vol. 114, no. 1, pp. 22–28, 1992. [6] o. leon, g. d. mey, and e. dick, “study of the optimal layout of cooling fins in forced convection cooling,” microelectronics reliab, vol. 42, pp. 1101–1111, 2002. [7] r. a. wirtz and p. dykshoorn, “heat transfer from arrays of flat packs in a channel flow,” in 4th ieps conference, baltimore, pp. 318–326. [8] r. a. wirtz, forced air cooling of low profile air cooling in air cooling technology for electronic equipment, ser. air cooling technology for electronic equipment, s. j. kim and s. w. lee, eds. new york: crc press, 1996. 84 g. de mey, m. felczak, b. więcek the use of fractional calculus for the optimal placement of electronic components on a linear array pb 8 g. de mey, m. felczak and b. wiȩcek [9] s. s. kang, “the thermal wake function for rectangular electronic modules,” journal of electronic packaging, vol. 116, pp. 55–59, 1994. [10] g. d. mey, m. felczak, and b. wiecek, “exact solution for optimal placement of electronic components on linear array using analytical thermal wake function,” electronics letters,, vol. 44, pp. 1216–1217, 2008. [11] m. abramowitz and i. stegun, handbook of mathematical functions. dover, 1970. 11680 facta universitatis series: electronics and energetics vol. 36, no 3, september 2023, pp. 449-464 https://doi.org/10.2298/fuee2303449p © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper determining the actual reduction factor of distribution cable lines with applied cross-bonding ljubivoje m. popović jp elektrodistribucija-beograd, belgrade, serbia abstract. the considered problem appears as the consequence of the fact that many metal installations surrounding power lines in urban areas are situated under the surface of the ground and cannot be visually determined or verified. this paper presents the methodological version that enables solving the problem in the case of cable lines with cross-bonding, but it can also be applied with higher accuracy to cable lines with no applied cross-bonding than the existing one. it is based on the test measurement of currents appearing in two cable line phase conductors during a simulated ground fault in the supplied hv substation. by using the here-presented methodology it is possible to put the grounding problem of high-voltage distribution substations into realistic frameworks. its application in practice shows that the actual conditions for solving this problem are much more favorable than was considered before. key words: substation; cable sheath; ground-fault current; grounding impedance; inductive coupling; safety conditions 1. introduction during a ground fault in an hv (high-voltage) distribution network, high currents and raised potentials appear at places where they normally do not exist. under such conditions, an hv cable line represents a very complex electrical circuit containing many conductively and inductively coupled elements. at the place of a ground fault, the fault current leaves the faulted phase conductor and returns to its sources in the power system by using all available paths. because of that, a ground-fault current in an hv substation divides into multiple mutually different flows. one of them is of special practical importance. this fraction dissipates into the surrounding earth through the grounding system of the supplied substation and produces all potentials and potential differences (touch and step voltages) that can be dangerous and harmful within and in the vicinity of hv substations. due to this, a special coefficient named the reduction factor of a feeding line has been introduced in the professional literature and corresponding technical standards [1, 2]. received march 28, 2023; revised april 27, 2023; accepted may 5, 2023 corresponding author: ljubivoje m. popović jp elektrodistribucija-beograd, masarikova 1-3, beograd, serbia e-mail: ljubivoje@beotel.net 450 lj. m. popović the determination of the reduction factor is nowadays a relatively easy engineer's task at the design stage of an hv substation. in the case of an overhead feeding line, it can be determined only by using the existing analytical expressions [1, 2]. however, in the case of cable lines the analytical expressions that enable taking into consideration the existence of all three metal sheaths in determining their reduction factor, for the fault anywhere along a cable line, were developed not so long ago [3, 4]. on the basis of these expressions, cable lines were introduced in the corresponding international technical standard [2]. however, in the case of cable lines with applied cross-bonding, the problem becomes still more complex so it was initially solving with the help of a computer [5], and the corresponding analytical expressions were derived only recently [6]. however, the here considered problem appears because by using the mentioned analytical expressions it is not possible to take into consideration the fact that cable lines, almost without any exception, are used in urban and suburban areas, i.e. there, where many other metal installations already have been existed. in the case of a ground fault these installations will spontaneously participate in returning the ground-fault current into the power system and in this way influence ground-fault current distribution. the determination of the reduction factor of a distribution cable line by taking into account the surrounding metal installations was enabled for the first time by the investigations performed in the hv distribution network of beograd [7]. the achieved solution is based on the results of the experimental measurements and an analytical procedure that enables substituting all surrounding metal installations, from the standpoint of their inductive influence on ground-fault current distribution, by only one equivalent conductor. the physical appearance and spatial position of this fictitious conductor are such that it represents a cylinder surrounding all hv cable line conductors along their entire length [7-9]. the final research results showed that the fraction of the ground-fault current flowing solely through the earth, in a typical urban area, is three to five times smaller than it has been considered before [6-8]. certainly, this fact throws completely new light on the whole grounding problem of hv/mv (middle voltage) substations located in urban areas and dramatically changes our earlier perception concerning the magnitude of this problem. somewhat later this method was modified in such a manner that the introduced equivalent conductor substitutes all surrounding metal installations including the metal sheaths of the considered cable line [10-11]. this time, it is imagined as a cylinder surrounding only the phase conductor carrying a simulated ground-fault current. as well as in the previous case this conductor is completely defined by only two of its parameters. one of them is the radius of this cylindrical conductor, whereas the other one is its longitudinal resistance. however, with this methodology version, the problem was not solved for all cable lines because it cannot be applied in the case of cable lines with applied cross-bonding, which is the most common case in the contemporary hv and ehv (extra high voltage) distribution networks [14]. this case is more complex and more difficult for solving because the cable metal sheaths are cross-bonded at certain places along these cable lines and in this way, they change their spatial positions toward the faulty phase conductor. here developed version of the methodology for compensation of deficiency of unknown but relevant data [6-13] (or, shortly of popović methodology), enables determining the actual reduction factor in the case of cable lines with applied cross-bonding. the data about the actual reduction factor of the feeding cable lines is indispensable for the final judgment concerning the achieved safety conditions within and in the vicinity of a supplied substation in cases where the preliminary estimations are not sufficient for such judgment determining the actual reduction factor of distribution cable lines with applied cross-bonding 451 [6, 8]. because of that, this paper can be also considered as a logical continuation of the work on solving the problem of testing and assessment of safety conditions in cases where the considered cable line in addition to the tested substation supplies also one or more transit substations. namely, by performing the preliminary testing we obtain the actual grounding impedance of the tested substation and transferred potentials including all other relevant potential differences (step and touch voltages) on its grounding system [6]. however, in some critical cases, this is not sufficient for a definitive judgment concerning the safety conditions within and in the vicinity of the supplied substation. in such cases, an accurate estimation of the safety conditions is indispensable. it can be achieved by taking into account the inductive influence of all metal installations surrounding the feeding line in any section of its length [7, 8]. also, based on the actual reduction factor of the feeding line it becomes possible the accurate determination of the highest potential that can appear during a ground fault on the grounding system of the supplied substation, and that can be harmful to the embedded electronic system. measurements performed for this purpose by the method “fall-of-potentialˮ (e.g. [1]) cannot give reliable results due to the small values of the currents that can be injected by this method through the tested grounding system into the surrounding ground, especially in the case of long feeding line supplying one or more transit substations [6]. 2. problem description certainly, determining the actual reduction factor of an hv or ehv cable line implies that this line and its supplied substation are already constructed and that they are at the stage immediately preceding their putting into operation. due to this, in most cases, the value of the actual reduction factor is necessary only for the final verification of the required safety conditions within and in the vicinity of the supplied substation [1]. exceptionally, if conducted test measurements show that the prescribed safety criteria are not achieved, the only additional measure that could be in that case applied is improving the feeding line reduction factor by laying a copper wire in the same trench with the feeding cable line [15]. certainly, for the more cost-effective implementation of this measure, it would be desirable for this trench not to be already covered. for the sake of an illustration of the considered problem, the main ground-fault current fractions in hv substations located in urban areas are shown in fig. 1. fig. 1 main fractions of a ground fault current 452 lj. m. popović based on fig. 1, it is not difficult to notice that in the case of a ground fault two fractions of the ground-fault current leave the power system. one of them is dissipated into the surrounding earth through the grounding system of substation b, while the other is induced in the metal installations surrounding the feeding line. because of that, both of these ground-fault current fractions if they are too large can cause dangerous and harmful effects in the immediate environment of the supplied substation and its feeding line. since the mutual separation of currents, ii and ie occurs along many external grounding electrodes (metal sheaths of outgoing mv cable lines) and under the surface of the ground, none of these currents can be determined only by calculations or only by measurements [16]. also, each of the surrounding metal installations, together with the earth as the common return path, forms one electrical circuit, while all of them form a very complex and large electrical circuit with many conductively and inductively coupled elements. due to that, such an electrical circuit is not easy to analyze even under the unrealistic assumption that all relevant data about it are known. besides that, the equivalent soil resistivity of the area surrounding a feeding cable line is relevant, but uncertain data because in urban conditions it cannot be exactly determined. although there are several methods to measure soil resistivity [1], no one is applicable in urban areas. this practical impossibility stems from the fact that the surface of urban areas is already covered by buildings, streets, sidewalks, and many other permanently constructed objects; whereas many known and unknown metal installations already exist under the surface of the land belonging to an urban area. the problem of determining the actual reduction factor was formerly solved thanks, inter alia, to the fact that the longitudinal mutual impedances between phase conductors and belonging metal cable sheaths remain unchanged along the whole cable line length [10, 11]. however, this is not the case with cable lines with applied cross-bonding and this is the reason because of which the previously developed methodology versions were not applicable in their case. thus, the problem that should be solved can be defined in the following manner: how can we determine the actual reduction factor when the cable line is with applied cross-bonding? 3. complete equivalent circuit of an hv cable line during a ground fault different metal installations like they are: sheaths of different types of distribution cable lines, neutral conductors of the lv (low voltage) networks, steel water pipes, foundation ground electrodes of relatively new buildings, etc. are situated in a relatively narrow and strictly defined corridor along and under each of urban streets. some of them are insulated toward the earth, whereas some others are in direct and continuous contact with the earth. through the mandatory terra-neutral (tn) grounding system in lv networks and consumer installations, some of them are interconnected in each of the buildings arranged along each street, whereas some others are interconnected at each mv/lv (customer) substation. as such, independently of their basic functions and spatial dispositions, during a ground fault in an hv distribution substation, these installations act as elements of a very large and spontaneously formed grounding system [16]. now, let us assume an hv cable line consisting of three single-core cables, with all three sheaths grounded at both line ends and with no applied cross-bonding. also let us assume the most general case, from the standpoint of their spatial formation, as is shown in fig. 2. determining the actual reduction factor of distribution cable lines with applied cross-bonding 453 fig. 2 single-core cables laid in a flat formation also, let us assume that the total number of surrounding metal installations, including the cable line sheaths, is an arbitrarily large number, n. then, the complete electrical circuit of this hv cable line, under the conditions of a simulated ground fault in supplied substation b, can be, according to e.g. [10, 11], presented as shown in fig. 3. fig. 3 complete equivalent circuit of the assumed hv cable line as can be seen, the presented equivalent circuit is composed of the self and mutual impedances of all surrounding metal installations and the considered cable line sheaths including the phase conductor carrying current it. the self-impedance of an arbitrary, nth, surrounding metal installation is, according to [2], determined by: 454 lj. m. popović 0 0 ln 8 2 t n n t t n z r j r         + + , ω/km, (1) and in the case of metal installations with a full metal cross-section, is: )ln 4 ( 28 00 n tr ttnn r jrz     +++= , ω/km, (2) whereas mutual impedance between two arbitrary, nth and mth, surrounding metal installations is determined by: nm t ttnm d jz       ln 28 00 += , ω/km; nm  (3) the equivalent earth penetration depth is determined by: t t f   658= , (m) (4) current in an arbitrary surrounding installation, in (fig. 3), induces in an also arbitrary (mth) surrounding installation a voltage, umn, which is determined by: nnmmn izu −= , (v/km) nm  (5) although complete, the presented equivalent circuit is not without any idealization and approximation of the actual physical model. the fact, that some of the metal installations are grounded at certain places, mainly in each of the buildings arranged along both sides of streets, has been disregarded. also, the fact that the metal sheaths of the considered cable line are grounded at each of the cross-bonding boxes along hv or ehv cable lines has been disregarded. these facts are not important for us because we analyze only the induced currents that, as is well known, circulate only in the axial direction through the cable line sheaths and surrounding metal installations, and as such cannot produce any potential on them toward the earth. due to this, it is not relevant whether these installations are insulated or not and whether the introduced equivalent conductor [6-13] substituting all these installations have insulation, or not. because of the same reason, when we determine the reduction factor of hv overhead lines, we also do not take into consideration the fact that their ground wires are grounded at each tower, e.g. [2]. also, in practice, almost each of the surrounding metal installations has more different sections that are not laid at the same distance from the considered hv cable line i.e. in parallel with it and with any other of the surrounding metal installations. however, these facts also are not of any importance for the application of this methodology [12, 13, 16]. finally, the value of ρ in urban areas can be only approximately estimated based on the main geological characteristics of the soil surrounding the considered cable line. however, according to (1), (2), and (3), this approximation has not any greater influence on the accuracy of this methodology because impedances z'n and z'nm are only slightly dependent on the specific soil resistivity, ρ. based on the complete equivalent circuit in fig. 3 it is obvious that the current in any of the spontaneously formed electrical circuits contains a cumulative effect of the inductive coupling with all other surrounding electrical circuits formed by the line conductors and determining the actual reduction factor of distribution cable lines with applied cross-bonding 455 surrounding metal installations. this fact is utilized for solving the problem by the measurements of currents in only two of the cable line conductors. in the previously developed methodology version [10, 11], one of them is the test current through the phase conductor of one freely chosen single-core cable, it; whereas the other one is the current in the metal sheath of this single-core cable, i1. however, for solving the problem in the case of cable lines with cross-bonding it is necessary to introduce in the measurement circuit one more phase conductor [12, 13]. 4. equivalent sheath of the single-core cable caring test current 4.1. measurement circuit in the casa of lines with cross-bonding in the case of cable lines with applied cross-bonding the measurement circuit necessary for obtaining the necessary data can be presented, according to [12, 13], as shown in fig. 4. fig. 4 the principal measurement circuit 4.2. determination of the relevant parameters of the equivalent conductor when we introduce an equivalent conductor (in the farther text: equivalent sheath) substituting all surrounding metal installations including all cable line sheaths, the considered cable line during the necessary measurements (fig. 4) can be presented by a relatively simple equivalent circuit shown in fig. 5. fig. 5 simplified equivalent circuit 456 lj. m. popović as can be seen, in this circuit the grounding impedances at the ends of the line are disregarded (za ≈ zb ≈ 0), which is in accordance with the definition of the feeding line reduction factor, e.g. [2]. in that way, we take into consideration only the mutual inductive influence of the faulty phase conductor and all neutral conductors on the reduction of the current dissipated through the grounding system of the supplied substation into the surrounding earth. based on the equivalent circuits in figs. 3 and 5 it is obvious that the arbitrarily large number (n) of unknown induced currents is substituted by only one current, ii. also, numerous known and unknown surrounding metal installations including sheaths of the considered cable line are substituted by only one equivalent sheath. the relevant parameters of this sheath can be determined by using the condition that currents it, i0, and ie (figs. 3 and 5) have to remain unchanged after this substitution. according to fig. 5, this condition can be expressed by the following system of equations: 0.2 0.1 110 0110 =++ =++ ieqeqteq ieqpht iziziz iziziz (6) impedances z′ph and z′01 are, according to [2], given by:         +++= ph tr ttphph r jrz       ln 428 00 , ω/km, (7) d jz t tt       ln 28 00 01 += , ω/km, (8) based on the system of equations (6), it is interesting to note that the relative ratio between the currents it, i1, and ii, does not depend on the voltages induced in the phase conductor carrying current it. it means that the voltages u01 and u0eq from the equivalent circuit in fig. 5 are not relevant in solving the considered problem and can be omitted from this circuit. on the basis of the introduced equivalent sheath, the considered cable line and all surrounding metal installations during a simulated ground fault can be presented by a relatively simple line model whose cross-section is shown in fig. 6. fig. 6 cross-section of the introduced simplified line model determining the actual reduction factor of distribution cable lines with applied cross-bonding 457 the additional phase conductor in this figure is marked differently (lighter shade) to indicate that for the purpose of this measurement, it serves as one of the line neutral conductors. on the basis, of fig. 6, the analytical expressions for impedances zeq, z0eq, and z1eq are known in advance and are, according to [2], determined by the following expressions eq t tteqeq r jrz       ln 28 00 ++= , ω/km, (9) ,ln 28 00 10 eq t tteqeq r jzz       +== ω/km, (10) since currents it and i1 are obtained by measurements, they can be considered as in advance known quantities, and equations (6) can be presented as: teqpheq eqeqeq i i zzz zzzz 1 2 1 0110 = − − . (11) then, since equation (11) gives the relationship between complex quantities, it can be presented in the following form: )( teqeqeq izzzz 0110re − = )( 1 2 1re izzz eqpheq − , )( teqeqeq izzzz 0110im − = )( 1 2 1im izzz eqpheq − , (12) where re and im are the real and imaginary parts of equation (11). in the system of equations (12), the only unknown quantities, according to (7), (8), (9), and (10), are r'eq and req. thus, by solving this system of equations we can determine the unknown parameters r'eq and req. when we determine these parameters, for obtaining the actual reduction factor of the certain cable line we can use the analytical expression for the reduction factor of the cable line constituted of only one single-core cable. it is, according to e.g. [4, 16], determined by: eq eq eq t e a r jr r i i r     ln 28 ' ' 00 ++ == , (13) where current ie can be determined by using the equivalent circuit in fig. 5. because of the previous approximations: za ≈ zb ≈ 0, it is necessary to remind that hv distribution substations are located in urban or suburban areas having many underground metal installations, that act as perfect grounding electrodes and/or as conductive connections with other grounding electrodes, like foundation earth electrodes of surrounding buildings [16]. thus, the quantitative relationships between the impedances shown in the equivalent circuits (figs. 3 and 5) are such that the influence of impedances za and zb can be neglected. based on these approximations, each current appearing in the additional phase conductor (fig. 4) or in any other of the surrounding installations/conductors is a consequence solely of the mutual inductive coupling of each of them with all of them (fig. 3). however, the presented methodology is developed based on the measured values of currents it and i1. according to 458 lj. m. popović this, it takes into account the fact that the real values of impedances za and zb are somewhat larger than zero. as a result, currents it and i1 contain components appearing only as a consequence of potentials zaie and zbie. however, these components of currents it and i1 are negligibly small in practical conditions because of the following facts: ▪ current ie is only a few percent of it because of strong inductive coupling between the phase conductor with current it on the one side and the additional phase conductor including all surrounding metal installations and cable line sheaths on the other side, and ▪ lengths of cable lines in hv distribution networks, l, is so large that almost always satisfies the following inequality: lzzz phba  (14) as is shown through the measured values of test currents it and i1, the inductive influence of all surrounding metal installations are taken into account (fig. 4), so that we do not need data about their individual constructive characteristics, as well as their mutual spatial positions, in solving the considered problem. also, because of that it is not important whether the considered line is with cross-bonding or not. since the spatial positions of the individual single-core cables in relation to the surrounding metal installations are not identical, the presented procedure should be applied to each of the line phase conductors separately. then, for the correct assessment of the safety conditions, we should adopt those parameters (r'eq and req) that correspond to the smallest inductive influence of the surrounding metal installations. also, the value of equivalent soil resistivity, necessary for the application of the methodology, should be adopted as the lowest one, between several ones approximately estimated based on the main geological characteristics of the relevant urban area. certainly, in this way, the finally determined value of the actual reduction factor is slightly higher but the error is on the side of increased safety. also, because of the purpose of correct taking into account the favorable influence of all surrounding metal installations, it is necessary to know the following: when through the line are supplied one or more transit substations then the test circuit (fig. 4) has to include the entire feeding line, from the supply to the supplied substation [6-8]. the here presented methodology enables the determination of the actual ground-fault current fraction dissipated into the surrounding earth through the grounding system of supplied hv substations located in urban or suburban areas. also, it enables the determination of the actual value of the ground-fault current fractions passing through the cable line sheaths and the surrounding metal installations relevant to their thermal stress during a ground fault. finally, it is necessary to mention that here presented methodology version can be applied also in the case of feeding lines that represent a longitudinal combination of constructively different sections (for example one overhead and one cable section). the presented methodology version is, because of the stronger inductive influence between two phase conductors than between one of them and its sheath, more accurate than the previous ones applicable in the case of cable lines with no applied cross-bonding [10, 11]. thus it can be said that it represents the final stage of the developing process of the methodology that enables taking into account the inductive influence of metal installations surrounding hv and ehv cable lines on the ground fault current distribution in the supplied substations [7, 8, 10, and 11]. only on the basis of the measured values of the currents it and i1 (fig. 4) is it possible to take into account all relevant factors and parameters, including the fact that the line under consideration is with applied cross-bonding. determining the actual reduction factor of distribution cable lines with applied cross-bonding 459 5. practical significance of the presented methodology the experimental investigations in the 110 kv distribution network of beograd show that the part of the ground-fault current passing through the grounding system of the supplied substation is 2.01, 3.65, and 5.11 times smaller in relation to its values obtained without taking into account the surrounding metal installations, e.i. only based on the corresponding analytical expressions [6-8]. so wide range of the obtained values can be explained by the fact that the experimental measurements were performed on cable lines passing through areas that are of very different degrees of urbanization. as in the ratio in which the reduction factor decreases, all potentials and all potential differences on the grounding system of the supplied hv substation also decrease one can conclude that these results throw a completely new light on the grounding problem of hv substations located in urban surroundings and dramatically change our earlier perception of its magnitude. thus it can be said that the presented methodology enables finding more economical solutions for the grounding problem of hv substations located in urban surroundings than was possible before. the actual reduction factor enables us to put the whole grounding problem of the supplied substation into realistic frameworks that generally lead to more economical solutions to this problem in different practical cases. certainly, these effects are more pronounced in cases where, because of high local soil resistivity and/or a high level of short-circuit currents, special measures were considered necessary to protect personnel and the public against too-high touch voltages (e.g. bare copper wire laid in the same trench as the feeding cable line or/and in the same trench as the outgoing mv cable lines), e.g. [15]. besides, one can expect the elimination of the strict requirement for the application of expensive mv cables with an uncovered metal sheath that acts as external grounding electrodes for supplied hv substations. for example, such a requirement was for a long time posed by the power distribution company of beograd, intending to enable reliably solving the grounding problem of the hv substation in the condition of the high level of ground-fault currents in the supply network. for a large number of hv distribution substations, because of practical difficulties in obtaining permission for the test circuit by using the whole feeding line, the preliminary test and assessment of safety conditions is the most rational approach [6]. these preliminary tests enable us to determine the actual impedance of the grounding system of the substations located in urban areas and the relative potential distribution on its grounding system. on the basis of them for the preliminary assessment of safety conditions, it is sufficient the feeding line reduction factor determined by calculations [2-4], as well as the actual feeding line reduction factor, but determined for the nearest transit substation that is supplied with this same cable line [6]. however, in some critical cases, it may be shown that we need an accurate estimate of the value of the maximal potential differences (transferred potentials and touch voltages) that may occur on the grounding system of the tested substation. in such cases, the determination of the actual reduction factor of the feeding cable line can enable us to avoid the additional measures for the improvement of the feeding line reduction factor and/or grounding system characteristics of the supplied substation [15, 16], if these measures are not really indispensable. besides, the actual reduction factor of the feeding cable line allows us in some cases a preliminary assessment of the safety conditions at the design stage of the substation that will be supplied with the same cable line [6]. finally, based on the actual reduction factor it is possible to determine the maximal potential that can be appeared during a ground fault on the grounding system of the supplied substation, and which can be harmful to the sensitive electronic equipment if the appropriate protection measures are not applied. 460 lj. m. popović since the actual reduction factor depends on numerous local factors and parameters for the designers of future hv substations and those who test the safety conditions in existing hv substations, it would be useful to have a file with data on the actual values of the reduction factor for all existing feeding cable lines in one hv distribution network. knowing these values could be certainly useful for them because reduces the possibility of accepting erroneous measurements and/or calculation results in some particular cases. finally, the research results presented in [6] show that ignoring the existence of surrounding metal installations can lead to completely incorrect testing and estimation of safety conditions in some critical cases of hv distribution substations. namely, by applying the previously known and used testing procedure in some critical cases, the prescribed safety criteria can be considered satisfied, although that is not the case, i.e. although too high potential differences and human life losses are possible [6]. 6. mathematical interpretation of the developed methodology based on the complete equivalent circuit of an hv or ehv cable line given in fig. 3 we can write the following system of equations: 0 0 0 0 22110 22110 2222212120 1121211110 00202101 =++++++ • • • =++++++ • • • =++++++ =++++++ =++++++ nnnnnnnntn nnnnnnnntn nnnnt nnnnt annnntph iziziziziz iziziziziz iziziziziz iziziziziz uiziziziziz (15) before the foreseen test measurements, in the given system of equations only the impedances: zph, z11, z22, z33, z01, z02, z03, z12, z13, and z23, can be obtained by calculations and can be considered as in advance known quantities together with voltage ua. after the foreseen measurements and obtained values for currents it and i1, unknown quantities remain current ii and all other impedances, from z23 until znn. however, after introducing the here-defined equivalent sheath, the number of unknown quantities is significantly reduced so that we obtain the following system of only three equations: 0.3 0.2 .1 110 111110 0101 =++ =++ =++ ieqeqteq ieqt aieqtph iziziz iziziz uiziziz (16) determining the actual reduction factor of distribution cable lines with applied cross-bonding 461 where ni iiiii ++++= 432 (17) in the system of equations (16), the unknown quantities are ii, z0eq, z1eq, and zeq, and since the number of unknown quantities is greater than the number of equations this system of equations is seen generally as unsolvable. however, by introducing an equivalent sheath that represents a cylinder that encompasses the line conductors with currents it and i1 (fig. 6) along the line, the impedances z0eq and z1eq become equal to each other and the number of unknown quantities becomes smaller. also, under the assumption that the introduced equivalent conductor is in the form of an equivalent cable sheath, we obtain a system of equations (12) that is solvable. it enables the determination of all unknown quantities, ii, z0eq, and zeq. when impedances z0eq, and zeq are determined it is not difficult by using expressions (9) and (10) to determine the relevant parameters of the introduced equivalent conductor/sheath, r'eq, and req, as well as current ii. here it is interesting to note that any other imagined appearance of the introduced equivalent conductor does not enable the solution to the considered problem. by using a similar procedure it is possible to determine any (mth) current in the system of equations (15), im [13]. it is only necessary that during the foreseen test measurements the installation through which this current would flow is ungrounded at one of its ends, i.e. that there is no current in this installation. if the spatial position of the installation in relation to the phase conductor with current it is known, when we determined the relevant parameters of the equivalent cable sheath without the participation of this installation, required current im can be, according to (15), determined by using the following system of equations: 0.3 0.2 .1 10 1110 00 =++ =++ =++ meqieqteq meqieqt ameqieqtph iziziz iziziz uiziziz (18) where mnii nn n ni =  = = , 2 (19) when we have an hv cable line in normal operating conditions if phase conductors are located at a somewhat greater distance from each other, the problem of the determination of the inductive influence on any of the surrounding metal installations, considered separately, can be solved on the basis of the principle of superposition as shown in [13]. when we need the actual transfer capacity of hv or ehv cable lines [12], then we have the situation that instead of ground-fault current the load currents circulate in all three phase conductors and differently affect the surrounding metal installations. thus, for determining the parameters of the equivalent neutral conductor substituting all surrounding metal installations, a test current has to circulate simultaneously through all three phase conductors. therefore, it seems that it is not possible to use the measurement circuit presented in fig. 4. however, the mutual distances between single-core cables of a cable line are relatively small in comparison with their distances from the surrounding metal installations. due to this, with a negligible small error can be used the measurement 462 lj. m. popović circuit presented in fig. 4 for obtaining the relevant parameters of the equivalent conductor substituting all surrounding metal installations. at this, the sheaths of the single-core cables should be ungrounded at one of the ends of the considered cable line because during normal operation the currents induced in them cancel each other when the line is with cross-bonding. after the determination of the parameters of the equivalent neutral conductor, the further calculation procedure is described in [12]. 7. conclusions the presented methodology version enables taking into account the favorable inductive influence of metal installations existing in urban areas on the ground fault current distribution in hv substations supplied by cable lines with applied cross-bonding. in critical cases when a preliminary estimation is not sufficient, the presented measurement and calculation procedure enables the correct evaluation of the actual potentials and potential differences at periodical testing and verification of the safety conditions within and in the vicinity of these substations. since the favorable effects of the surrounding metal installations are very pronounced, the presented methodology could be served as a basis for an amendment of the corresponding technical standards. 8. list of symbols the notation used has the following meaning: a (b) – supply (supplied) substation, f – ground fault location (supplied substation), if – ground-fault current component coming from substation a, in – ground-fault current fraction circulating through the line neutral conductors, ii – ground-fault current fraction induced in the surrounding metal installations (fig. 3) and current induced in the surrounding metal installations including cable line sheaths (fig. 5), ie – ground-fault current fraction dissipated through the grounding system of substation b into the surrounding earth, d – the distance between two adjacent single-core cables (m), zsh – self-impedances of the cable sheath, rsh – mean radius of the cable sheath (m), ua – auxiliary voltage source, un0, un1, un2, …, unn – voltages induced in an arbitrary (nth) metal installation by the current in each of the surrounding electrical conductors including metal installations, it – simulated ground-fault current through one of the phase conductors of the considered line, i1 – current through the sheath of the single-core cable carrying test current it (fig. 3) and current induced in the additional phase conductor (fig. 4 and 5) i2, i3 – currents induced in the sheaths of the other two single-core cables, i4, i5, …, in, …, in – currents induced in the individual surrounding metal installations (fig. 3), zph – self-impedance of the phase conductor, z4, z5, z6, …, zn – self-impedances of the individual surrounding metal installations, determining the actual reduction factor of distribution cable lines with applied cross-bonding 463 n – an arbitrarily large number representing the total number of surrounding metal installations enlarged by the number of the sheaths of the considered cable line, r′n – longitudinal resistance of an arbitrary, nth, surrounding metal installation (ω/km), rn – mean radius of an arbitrary, nth, surrounding metal installation (m), dnm – the distance between two arbitrary, nth and mth, surrounding metal installations (m), ωt – angular test frequency: 2 t, µ0 – magnetic permeability of vacuum: 4π∙10–7 vs/am, µr – relative magnetic permeability of the metal that is used for the installation production, δt – equivalent earth penetration depth (m), ρ – equivalent soil resistivity along and around the considered cable line (ωm), ft – test circuit frequency, i2, i3, and i4 (fig. 4) – currents through the individual cable line sheaths, a – ampere-meter, u01 (ueq1) – voltages that current i0 (ii) induces in the phase conductor with current it, u10 (u1eq) – voltage that current it (ii) induces in the additional phase conductor with i0, ueq0 (ueq1) – voltages that current it (i0) induces in the equivalent sheath, z′eq – self-impedance of the introduced equivalent sheath (ω/km), r'eq – longitudinal resistance of the equivalent sheath (ω/km), and req – mean radius of the imagined cylinder representing the equivalent sheath (m). z01 mutual impedance between the additional phase conductor and the phase conductor with current it (ω/km), z′eq0 − mutual impedance between the equivalent sheath and the phase conductor with current it (ω/km), z′1eq – mutual impedance between the introduced equivalent sheath and the additional phase conductor (ω/km), r'ph – longitudinal resistance of the phase conductor, (ω/km), rph – radius of the phase conductor (m), references [1] ieee guide for safety in ac substation grounding, ieee std. 80, 2000. [2] short-circuits currents in three-phase a.c. system-part 3:currents during two separate simultaneous line-to-earth short circuit and partial short-circuit flowing trough earth, iec int. std. 60909-3, ed. ii, 2003. [3] lj. m. popović, "determination of the reduction factor for feeding cable lines consisting of three single-core cables" ieee transactions on power delivery 18 (3) (2003) 736-744. [4] lj. m. popović, "improved analytical expressions for the determination of the reduction factor of the feeding line consisting of tree single-core cables", european trans. electr. power, vol. 18, pp. 190-203, 2008. [5] r. benato et al., "ground return behavior in high voltage alternating current insulated cables", energies, vol. 7, no. 12, pp. 8116-8131, 2014. [6] lj. m. popović: "preliminary testing and assessment of safety conditions of hv substations located in urban areas", electr. power syst. res., vol. 195, p. 107111, 2021. [7] lj. m. popović, "influence of the metal installations surrounding the feeding cable line on the ground fault current distribution in supplied substations", ieee trans. power deliv., vol. 23, no. 4, pp. 2583-2590, 2008. [8] lj. m. popović, "testing and evaluating grounding systems for substations located in urban areas", iet gener., transm. distrib., vol. 5, no. 2, pp. 231-238, jan. 2011. 464 lj. m. popović [9] lj. m. popović, "transfer characteristics of electric-power lines passing through urban and suburban areas", int. j. electr. power energy syst., vol. 56, pp. 151-158, 2014. [10] lj. m. popović, "determination of the actual reduction factor of hv and mv cable line passing through urban and suburban area", fu elec. energ., vol. 27, no. 1, pp. 25-39, 2014. [11] lj. m. popović, "ground-fault current distribution when a ground fault occurs in hv substations located in urban areas", prog. electromag. res. b, vol. 5, pp. 167-179, 2014. [12] lj. m. popović, "inductive influence of surrounding metal installations on power transfer capacity of hv cable lines with applied cross-bonding", int. j. electr. power energy syst., vol. 120, p. 105963, 2020. [13] lj. m. popović, "inductive influence of hv cable lines in urban and suburban areas", electr. power syst. res., vol. 176, p. 105944, 2019. [14] ieee guide for bonding shields and sheaths of single-conductor power cables rated 5 kv through 500 kv, ieee standard 575-2014, 2014. [15] g. zizzo, a. campoccia and e. riva sanseverino, "a new model for safety analysis in a system of earthing systems interconnected through bare-buried conductors", comp. math. electr. eng. (compel), vol. 28, pp. 412-436, 2009. [16] lj. m. popović, practical method for analysis and design of hv installation grounding systems. elsevier, london, 2018. 14298 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 1 12 https://doi.org/10.2298/fuee2601001k © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd invited paper microwave sensor array based on split ring resonators for tumor detection and localization anja kovačević, nikola basta, milka potrebić ivaniš university of belgrade – school of electrical engineering, belgrade, serbia orcid ids: anja kovačević https://orcid.org/0000-0002-6648-8331 nikola basta https://orcid.org/0000-0001-6141-7414 milka potrebić ivaniš https://orcid.org/0000-0002-4866-6608 abstract. a microwave sensor array for tumor detection and localization was designed and fabricated on an fr-4 substrate. the sensor consists of three square-shaped split-ring resonators coupled to a microstrip feeding line. each sensing cell produces a stopband in the transmission spectrum of the device. the sensing cells are mutually decoupled, so that the deposition of the sample on one of the cells induces shift of resonant frequency of only that cell, thereby enabling spatial resolution. the sensing performance was experimentally verified with the samples of animal tissues in an ex vivo setting. pork fat and lean tissues were used for preparing the samples, since the dielectric contrast between them roughly corresponds to the contrast between healthy and tumorous tissue. experimental results suggest that the designed sensor can be effectively used for tumor detection and localization. key words: biosensors, tissues, tumors, split-ring resonators, tumor detection, tumor localization 1. introduction alongside traditional applications such as wireless communication, satellite and radar systems, microwave technology has also been successfully employed in material sensing and particularly in biomedicine and healthcare settings for both diagnostic and therapeutic purposes [1]−[2]. in biomedical applications, propagation media for microwaves are biological materials that are distinctly inhomogeneous and susceptible to anatomical, physiological and biochemical variations [2]. consequently, the main challenge in using microwaves for such applications is understanding the interaction between electromagnetic (em) waves and biological materials and translating that knowledge into effective system design. received november 21, 2025; accepted november 21, 2025 corresponding author: milka potrebić ivaniš university of belgrade – school of electrical engineering. e-mail: milka.p@mts.rs 2 a. kovačević, n. basta, m. potrebić ivaniš interactions between em waves and biological materials can be of thermal or non-thermal character. applications based on thermal interactions include sterilization of laboratory and medical equipment, microwave ablation therapy used to treat malignant tumors in the liver, kidney, lung and bone tissues [3], and controlled heating treatments against viruses such as human papilloma virus [4]. microwave therapies can increase the effectiveness of treatment, reduce the discomfort and shorten recovery time [2]. non-thermal interactions are of great significance in medical diagnostics where antennas and microwave sensors are used for microwave imaging, biosensing, diagnosis of malignant tumors and real-time analysis of body fluids [2],[4]. non-invasive characterization of biological materials and living systems can be performed by sensors that exploit the non-thermal wave-matter interaction. these sensors can be designed to operate in different parts of the em spectrum. the choice of operating frequency depends on the specific sensing application, where a compromise must be made between the achievable resolution, the penetration depth into the material under test (mut), the device size, and the cost of its manufacture. shorter waves, such as ultraviolet, cause damage to dna and proteins due to their ionizing nature, which makes them unsuitable for biomedical applications [4]. on the other hand, longer waves, such as microwave and terahertz (thz) waves, are classed as non-ionizing and are much safer for biological muts. although thz sensors offer high resolution and are relatively small in size [5]−[8], they suffer from low penetration depth into the mut due to strong em absorption at high frequencies and relatively high manufacturing costs. in contrast, microwave sensors are less expensive to manufacture and operate at even longer wavelengths, which can penetrate more deeply into the mut. various designs of microwave sensors for biosensing have already been investigated. a planar sensor with a printed spiral presented in [9] was designed to determine the concentration of d-glucose in pig blood. microwave sensors based on coplanar waveguides [10], and electric-lc resonators [11] were tested for real-time glucose detection. differential sensors constitute a distinct class of sensors whose sensing principle relies on symmetry between two sensing elements [12]. microwave sensors with split-ring resonators (srr) of various shapes were designed for organic tissue analysis and ablation therapy [13]−[14]. the organic tissue analysis for tumor detection and localization utilizing microwave sensors represents a promising cost-effective addition to the traditional methods for diagnostics such as computerized tomography (ct), x-rays and magnetic resonance imaging (mri) [15]. detection of a tumor in the surrounding healthy tissue is based on the dielectric contrast between them. the relative permittivity of abnormal tissue is approximately 10 – 30% higher compared to healthy tissue [14]. on the other hand, localization of abnormality benefits from the sensor’s ability to perform spatial mapping of tissue under test (tut), which can be taken into consideration during the design process. the ability of spatial mapping is achieved by integrating individual sensing elements into an array. in [16], a 10×10 electronically controlled complementary spiral-resonator array for skin tumor detection was investigated. the experimental results demonstrated that the array can detect tumor tissue as small as 10 mm in diameter. a multi-layer metasurface loop-dipole sensor array for near-field breast tumor detection was considered in [17], showing that it can detect tumorous tissues in breast phantoms placed closely to the sensor. the frequency-multiplexed planar sensor arrays, described in [15], [18], [19], are simpler and more cost-effective, but still proven to be efficient solutions to extract the position of the abnormality. microwave sensor array based on split ring resonators for tumor detection and localization 3 in our previous works, we have designed a two-cell planar touch sensor for wearable applications [18] and a six-cell microwave sensor for tissue differentiation [19]. with the sensor from [19], we were able to detect the positions and distinguish two types of deposited cube-shaped animal tissue samples (muscle or fat) using a low-cost network analyzer. in this study, a planar frequency-multiplexed microwave sensor array of three srr-based sensing cells is fabricated, and its sensing performance is evaluated using a slab of animal fat tissue, into which small muscle tissue abnormalities are introduced. the sensor design, alongside its principle of operation, is discussed in section 2. a fabricated prototype and experimental results are presented in section 3. the most important results of this work are summarized in section 4, along with further research directions. 2. sensor design the microwave sensor proposed in this study is a planar structure designed for direct contact with tut in either ex vivo or in vivo scenarios. it consists of three sensing cells that are coupled to a microstrip feeding line (fig. 1). the sensing cells are square-shaped srrs with three gaps. dimensions of the sensor presented in fig. 1 are given in table 1. the sensor is printed on the fr-4 substrate with the following parameters: εr = 4.5, tanδ = 0.019, thickness h = 1.5 mm and metallization thickness t = 0.035 mm. the sensing principle is based on the strong response of srr to the incident em field and can be considered from two different, but mutually correlated perspectives. the circuit-based perspective implies modeling of srr as an lc resonant cell (if losses are neglected) coupled to a microstrip feeding line. inductivity of srr comes from the conductive square-shaped ring. the srr’s capacitance mainly stems from the gaps, which act as plate capacitors in the first approximation. depositing the tut sample on the gap increases the effective permittivity of the dielectric in the gap and therefore its capacitance. consequently, the resonant frequency of srr is shifted towards the lower frequencies. samples with different electrical properties induce different resonant frequency shifts, thus leaving a unique footprint in the response. from the antenna-based perspective, the srr can be regarded as a half-wavelength dipole antenna with l-shaped capacitive loads on both sides. the antenna is excited by a signal propagating through a coupled microstrip line. the capacitive loads provide non-zero currents at the ends of a dipole, ensuring the strong interaction with the tut sample in the lateral gaps, which represent the sensitive regions of the sensing cell. the bottom gap is not affected by the sample, as the wave-sample interaction there is fairly limited due to the weak em field. the antenna-based perspective helps identify the sensor’s sensitive regions, which is fairly difficult to determine from a circuit-based perspective. during the design process, the sensor was modeled in circuit simulator awr microwave office and in software for 3d em analysis wipl-d pro [20], [21]. a comparison between the transmission spectrums obtained from awr microwave office and wipl-d pro is shown in fig. 2. from this figure, it can be concluded that the circuit simulator gives sufficiently accurate results and can therefore be used for sensor design, which is in accordance with previously reported results [15]. each sensing cell produces its own stopband in the transmission spectrum, centered around its resonant frequency. the width of a stopband is determined by the strength of 4 a. kovačević, n. basta, m. potrebić ivaniš coupling between the feeding line and the corresponding srr. to achieve narrow stopbands, which are highly desirable for sensing applications, the width of the gap between the feeding microstrip line and srr should be carefully chosen. if that gap is too wide, the srr will be completely isolated from the line (the equivalent dipole antenna will remain without excitation). on the contrary, if the feeding line and srr are too close, the coupling will be excessively strong, which will result in a wide stopband [22]. fig. 1 the proposed microwave sensor – view from above (on the left) and cross section (on the right) table 1 sensor dimensions (in mm) a1 17.1 a2 13.7 a3 11.3 g11, g12, g13, g21, g22, g23, g31, g32, g33 0.5 s1, s2, s3 0.3 w, w1, w2, w3 2.8 d12, d23 4.5 l 61.1 to obtain spatial resolution, the sensing cells must be mutually decoupled so that the response of one cell does not affect the response of the others. the independence of sensing cells is ensured during the design process by choosing an appropriate distance between neighboring srrs ( },{,3 2312 dddhd = ). as a result of decoupling, the presence of a sample on one sensing cell alters only the peak that corresponds to that cell, while other peaks remain unchanged. therefore, a spatially resolved reconstruction of the sample can be performed. the number of pixels in the reconstruction is equal to the number of sensing cells. additionally, each resonance can be tuned independently, which can significantly shorten the analysis time, especially when using a full-wave simulator. during the design process, it is necessary to choose the operating frequency range. the upper frequency limit fu (for the proposed sensor fu = 5.2 ghz) determines the number of sensing cells. if a sensing cell resonates at frequency f, it also resonates at frequencies kf, where k is a positive integer. consequently, to ensure the independence of resonances and unambiguous sample localization, the first resonant frequency f1 must be greater than fu/2. additionally, resonances cannot be too close to each other, since the presence of the sample microwave sensor array based on split ring resonators for tumor detection and localization 5 induces a frequency shift toward lower frequencies. that frequency shift is determined by the electrical properties of the tut sample. for example, if a sample deposited on the second sensing cell induces a frequency shift larger than f2 – f1, the second peak will move ahead of the first one, and it will be incorrectly concluded that the sample is located on the first sensing cell. the resonances from fig. 2 are 3.060 ghz, 4.020 ghz and 5.120 ghz for awr and 3.047 ghz, 4.022 ghz and 5.198 ghz for wipl-d. fig. 2 comparison of s21-parameters obtained from awr microwave office and wipl-d pro 3. sensor prototype and experiment setup the sensor prototype was printed on an fr-4 substrate, according to the layout of the design from fig. 1, created in altium designer [23]. the fabricated prototype is presented in fig. 3. for the preliminary validation, the performance of the fabricated sensor prototype was experimentally tested with animal tissue samples in an ex vivo setting. pork fat and lean tissue samples that were used for experimental verification are shown in fig. 4. the contrast between fat and muscle animal tissue roughly corresponds to the contrast between healthy and malignant breast tissue [24]. in ex vivo conditions, the contrast between tissues is slightly lower than in in vivo conditions due to the lack of blood supply [24]. to preserve a sufficiently large contrast, samples were kept fresh and stored at temperatures below 5°c to reduce water evaporation and maintain the existing water content in the tissue. to prepare the samples shown in fig. 4, the slab of pork fat tissue was first cut into blocks matching the dimensions of the sensor prototype. then, holes were punctured in the blocks of fat tissue. finally, the pieces of muscle tissue that represent tumors were inserted into the punctured holes. one block of fat tissue remained unpunctured to serve as a reference sample of healthy tissue without tumors. for the measurement of the scattering parameters, a vector network analyzer, agilent n5227a pna, was used. to perform measurements with the tut, an isolation layer was inserted between the sensor and the sample to protect the sensor from the high conductivity of tissue and to facilitate cleaning between uses. for that purpose, a 0.5 mm-thick plastic plate matching the dimensions of the sensor was prepared to act as an isolation layer. the final measurement setup is shown in fig. 5. 6 a. kovačević, n. basta, m. potrebić ivaniš fig. 3 fabricated sensor prototype fig. 4 samples of animal tissues. pieces of lean tissue are inserted into the slabs of fat tissue. bottom left slab is without inserted pieces fig. 5 setup for s21-parameter measurement. measurement device is vector network analyzer agilent n5227a pna microwave sensor array based on split ring resonators for tumor detection and localization 7 4. measurement results and discussion first, the s21-parameter was measured for the sensor without an isolation layer or sample. the comparison between the simulation and measurement results is presented in fig. 6. the local minima of the prototype’s transmission spectrum are slightly shifted in frequency and amplitude compared to the initial design. these differences are due to small deviations in substrate parameters and sensor dimensions. then, the reference scenario for tumor detection and localization was simulated. the entire sensor was first covered with a plastic isolation layer and then with a block of fat tissue, which represents healthy tissue without malignancies. the transmission responses measured before and after the addition of the isolation layer and sample are shown in fig. 7. the obtained results indicate that the isolation layer does not have a significant impact on the response. on the other hand, the addition of a fat tissue layer introduces significant amplitude and frequency shifts in all three stopbands. resonances of the sensor covered with fat tissue are 2.943 ghz, 3.867 ghz and 4.985 ghz. finally, samples with different positions of “tumors” were deposited on top of the isolation layer. measurement scenarios and results are presented in figs. 8 – 12. the size of the muscle tissue piece representing the tumor was 4 mm × 4 mm in all scenarios except the one shown in fig. 13, where a 5 mm × 6 mm muscle tissue piece was placed on the first sensing cell in addition to 4 mm × 4 mm on the third sensing cell. for all measurements, the reference scenario is a sensor covered with an isolation layer and fat tissue. the results show that the detection and localization of tumors in tut is possible for all investigated scenarios. if the tumor is placed on the sensitive region of the first sensing cell, as shown in fig. 8, only the first local minimum, which corresponds to the cell with the tumor, is altered. similar behavior can be seen in figs. 9 and 11 for the second and the third sensing cell, respectively. in the scenario from fig. 10, the tumor affects sensitive regions of the first two sensing cells and introduces changes in both corresponding stopbands. in the scenario shown in fig. 12, there are two tumors placed on the first and the third sensing cells, which alter the first and the third stopband. fig. 6 comparison between measured and simulated transmission spectrums. simulated result is from wipl-d pro 8 a. kovačević, n. basta, m. potrebić ivaniš fig. 7 transmission spectrums of sensor a) without isolation, b) with isolation and c) with isolation and layer of fat tissue the lateral gaps of the second and the third sensing cell are the most sensitive to the local changes in tut due to their higher resonant frequencies. introducing tumors to those areas causes a decrease in the peak’s sharpness and deformities in the peak’s shape. detection and localization of tumor remains possible, but precise reading of the frequency shift becomes more difficult. that can be potentially problematic if the goal is to determine the dielectric properties of tut using extraction techniques [22]. the measurement results are influenced by several parameters, which can be divided into two basic groups. the first group comprises parameters directly related to the tissue samples, such as freshness and storage conditions. the second group refers to the measurement fig. 8 measured transmission spectrum of sensor in given scenario with the tumor located on the first sensing cell microwave sensor array based on split ring resonators for tumor detection and localization 9 procedure itself, as well as the conditions in the room where the measurement is performed. this group includes the positioning of the sample, the contact between the sensor and the isolation, as well as the contact between the isolation and the sample, the room temperature, and the duration of the measurement. any change in these parameters compared to their state during the experimental verification of the sensor’s performance presented in this paper can slightly alter the shown results. fig. 9 measured transmission spectrum of sensor in given scenario with the tumor located on the second sensing cell fig. 10 measured transmission spectrum of sensor in given scenario with the tumor located in the space between the first and the second sensing cell 10 a. kovačević, n. basta, m. potrebić ivaniš fig. 11 measured transmission spectrum of sensor in given scenario with the tumor located on the third sensing cell fig. 12 measured transmission spectrum of sensor in given scenario with two tumors located on the first and the third sensing cell microwave sensor array based on split ring resonators for tumor detection and localization 11 5. conclusion in this paper, a microwave sensor array with three srr sensing cells coupled to a feeding microstrip line was designed and fabricated for tumor detection and localization. the performance of the fabricated prototype was experimentally verified with samples of animal tissue in an ex vivo setting. when the sample is deposited on the sensitive region of the sensor, it changes the resonant frequency of the corresponding sensing cell. the frequency shift depends on the electrical properties of the sample. the tumorous change in the tut sample is detectable if the dielectric contrast between the tumor and healthy tissue is sufficiently large. the proposed design employs decoupled sensing cells, making their resonant frequencies mutually independent, thus enabling tumor localization. on the example of several animal tissue samples with different positions of simulated tumors, it was shown that the proposed sensor can successfully detect and localize the tumor in the surrounding tissue. further research on this sensing technique includes possible design improvements such as miniaturization of the sensor to enable its non-invasive use in in vivo conditions, as well as exploiting experimentally obtained data to characterize detected tumorous tissue using an extraction technique. acknowledgement: this work was financially supported by the ministry of science, technological development and innovations of the republic of serbia under contract number: 451-03-137/202503/200103. references [1] n. petrović and p. o. risman, "various diffraction effects and their importance for detection of inhomogeneites in human tissues," facta universitatis series: electronics and energetics, vol. 33, no. 3, pp. 445–458, sep. 2020. [2] c. li, m. tofighi, d. schreurs, and t. j. horng, principles and applications of rf/microwave in healthcare and biosensing, elsevier, 2017. [3] m. lubner, c. brace, j. hinshaw, and f. lee jr, "microwave tumor ablation: mechanism of action, clinical results and devices," j vasc interv radiol, vol. 21, no. 8, pp. 1–38, aug. 2010. [4] a. gartshore, m. kidd, and l. t. joshi, "applications of microwave energy in medicine", biosensors, vol. 11, no. 4, pp. 1–13, mar. 2021. [5] a. kovačević, m. potrebić, d. tošić, "sensitivity analysis of possible thz virus detection using quadband metamaterial sensor," in proceedings of the 2021 ieee 32nd international conference on microelectronics (miel), pp. 107–110, niš, serbia, sep, 2021. [6] a. kovačević, d. тošić, m. potrebić, "sensitivity characterization of multi-band thz metamaterial sensor for possible virus detection," electronics, vol. 11, no. 5, pp. 1–19, feb, 2022. [7] a. kovačević, m. potrebić, d. tošić, "the impact of finite dimensions on the sensing performance of terahertz metamaterial absorber," facta universitatis series: electronics and energetics, vol. 36, no. 1, pp. 17–29, mar, 2023. [8] p. ranjan, n. mishra, ј. радовановић, m. potrebić ivaniš, l. murmu, j. kumar rai, "refractive index sensing: study and analysis for sars-cov-2 detection," optical and quantum electronics, vol. 56, no. 7, pp. 1–13, 2024. [9] h. melikyan, e. danielyan, s. kim, j. kim, a. babajanyan, j. lee, b. friedman, and k. lee, "non-invasive in vitro sensing of d-glucose in pig blood," medical engineering & physics, vol. 34, no. 3, pp. 299–304, apr. 2012. [10] m. c. cebedio, l. a. rabioglio, i. e. gelosi, r. a. ribas, a. j. uriz and j. c. moreira, "analysis and design of a microwave coplanar sensor for non-invasive blood glucose measurements," ieee sensors journal, vol. 20, no. 18, pp. 10572–10581, sept. 2020. 12 a. kovačević, n. basta, m. potrebić ivaniš [11] s. harnsoongnoen, a. wanthong, "coplanar waveguide transmission line loaded with electric-lc resonator for determination of glucose concentration sensing," ieee sensors journal, vol. 17, no. 6, pp. 1635–1640, mar. 2017. [12] n. nikkhah, r. keshavarz, m. abolhasan, j. lipman and n. shariati, "highly sensitive differential microwave sensor using enhanced spiral resonators for precision permittivity measurement," ieee sensors journal, vol. 24, no. 9, pp. 14177–14188, may 2024. [13] c. g. juan et al., "study of qᵤ-based resonant microwave sensors and design of 3-d-printed devices dedicated to glucose monitoring," ieee transactions on instrumentation and measurement, vol. 70, pp. 1–16, 2021, art no. 8005716, doi: 10.1109/tim.2021.3122525. [14] m. puentes, m. maasch, m. schüßler, c. damm, and r. jakoby, "analysis of resonant particles in a coplanar microwave sensor array for thermal ablation of organic tissue," in proceedings of the ieee mtt-s international microwave symposium, 2014. [15] m. puentes, c. weiß, m. schüßler, and r. jakoby, "sensor array based on split ring resonators for analysis of organic tissues," proc. of ieee mtt-s international microwave symposium, 2011. [16] j. bai, h. guo and x. lai, "an electronically controlled resonant microwave sensor array for skin tumor detection," ieee access, vol. 13, pp. 102445–102461, 2025. [17] m. a. aldhaeebi, t. almoneef, s. bamatraf, a.o. aldhaibain, o. bakhalah, s. alhdad, s. bakhalah, m. k. saleem, "near-field metasurface sensor for an early-stage breast cancer detection," sensors international, vol. 6, 2025. [18] a. r. kovačević, a. z. golubović, a. n. ninković, v. s. kostić and m. m. ilić, "design of an rf touch sensor for on-body applications," in proceedings of the 2024 ieee international symposium on antennas and propagation and inc/usnc‐ursi radio science meeting (ap-s/inc-usnc-ursi), florence, italy, 2024, pp. 1569–1570. [19] a. kovačević, n. basta and s. savić, "low-cost portable sensing system for organic tissue detection and differentiation," in proceedings of the 2023 ieee mtt-s international microwave biomedical conference (imbioc), leuven, belgium, 2023, pp. 184–186. [20] microwave office 14.0, cadence inc., https://www.cadence.com, national instruments awr design environment, el segundo, ca, 2025. [21] wipl-d pro 18.0, http://www.wipl-d.com, 3d electromagnetic solver, wipl-d d.o.o., belgrade, serbia, 2025. [22] m. puentes vargas, planar metamaterial based microwave sensor arrays for biomedical analysis and treatment, springer, 2014. [23] altium designer 22.0, https://www.altium.com/, printed circuit board software, san diego, ca, 2025. [24] a. martellosio, m. pasian, m. bozzi, l. perregrini, a. mazzanti, f. svelto, p. e. summers, g. renne, and m. bellomi, "0.5 – 50 ghz dielectric characterization of breast cancer tissues," electronics letters, vol. 51, no. 13, pp. 974–975, jun. 2015. instruction facta universitatis series: electronics and energetics vol. 30, no 4, december 2017, pp. 571 584 doi: 10.2298/fuee1704571v toward acoustic noise type detection based on qq plot statistics * sanja vujnović, aleksandra marjanović, željko đurović, predrag tadić, goran kvaščev university of belgrade, school of electrical engineering, belgrade, serbia abstract. fault detection and state estimation using acoustic signals is a procedure highly affected by ambient noise. this is particularly pronounced in an industrial environment where noise pollution is especially strong. in this paper a noise detection algorithm is proposed and implemented. this algorithm can identify the times in which the recorded acoustic signal is influenced by different types of noise in the form of unwanted impulse disturbance or speech contamination. the algorithm compares statistical parameters of the recordings by generating a series of qq plots and then using an appropriate stochastic signal analysis tools like hypothesis testing. the main purpose of this algorithm is to eliminate noisy signals and to collect a set of noise free recordings which can then be used for state estimation. the application of these techniques in a real industrial environment is extremely complex because sound contamination usually tends to be intense and nonstationary. the solution described in this paper has been tested on a specific problem of acoustic signal isolation and noise detection of a coal grinding fan mill in thermal power plant in the presence of intense contaminating sound disturbances, mainly impulse disturbance and speech contamination. key words: acoustic signal, qq plot, noise detection, predictive maintenance 1. introduction it is well known that the largest financial loss for modern industrial plants is due to inefficient or untimely maintenance [2]. this is especially true for power plants which are designed to be in function for many decades after their construction. therefore, it is only logical that there is a significant amount of research done in an attempt to prolong the working life of the plant, improve the quality of its operation [3] and reduce unnecessary losses [4]. with this in mind, the fact that predictive maintenance has become a very received november 16, 2016; received in revised form february 21, 2017 corresponding author: sanja vujnović school of electrical engineering, university of belgrade, kralja aleksandra blvd. 73, 11120 belgrade, serbia (e-mail: svujnovic@etf.bg.ac.rs)  an earlier version of this paper received best section paper award at automatics section at 3rd international conference on electrical, electronic and computing engineering icetran 2016, zlatibor, serbia, 13-16 june, 2016 [1] 572 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev popular area of research is not so surprising. crucial aspects of predictive maintenance are fault detection and state estimation, i.e. the estimate of whether the fault has occurred somewhere within the system or whether certain components are worn and the maintenance needs to be done in order to replace them. the accelerometers are the sensors most commonly used for implementing predictive maintenance algorithms on rotating machinery. the logic behind this is sound: as the fault occurs within the rotating element or as the wear of some components becomes pronounced, the vibration of the machine is sure to change accordingly [5]. the sensors can measure this vibration and algorithms can be constructed which can, based on the change in vibration signal, detect the amount of wear of certain components. these techniques are widely used in the industry with much success [6]; however, an alternative has been presented in the early 90s. this alternative proposes the use of acoustic signals for the same purpose. it has been shown that sound recordings can be as informative as vibration signals when it comes to state estimation of components [7], but acoustic sensors (microphones) are cheaper to obtain and are contactless, which is a very important feature for certain types of processes. one major drawback of using microphones for predictive maintenance is the fact that they are very sensitive to ambient noise. this makes them less than ideal for the use in an industrial environment which is usually very polluted with contaminating noise. for this reason microphones are still rarely used for predictive maintenance in real industrial environments. one way to significantly increase the applicability of acoustic signals for this purpose is developing an algorithm capable of filtering out the acoustic noise caused by the surrounding events. there are many preprocessing algorithms developed in recent years for purpose of fault detection and state estimation. using one of the standard frequency filters is usually not applicable because it is very difficult (if not impossible) to determine the frequencies on which the noise is dominant. even if that can be established, usually the useful part of the signal exists on the same frequencies as well, so filtering out the noise would significantly damage the informative part of the signal. impulse disturbance in time domain, for example, is equally pronounced on all frequencies, so it cannot be filtered using traditional algorithms. taking this into consideration one can easily conclude that standard frequency domain analysis is not reliable enough for noise detection in acoustic signals. therefore advanced procedures should be used for this purpose, such as statistical analysis of the signal. statistical parameters of the recorded signal can be very informative in this case because different statistical behavior is expected when the noise occurs and when the signal is in its nominal form. one of the standard tools used for statistical comparison and analysis are qq plots and they are shown to be quite effective in this case [8]. the purpose of the algorithm proposed in this research is not removal, but rather detection of noise. the entire recording is separated into windowed signals, and each windowed segment is tested for noise. this is done by comparing the statistical distribution of the recorded signal against the statistical distribution of the signal in nominal working condition. the comparison is conducted using qq plots and neyman-pearson hypothesis test. the noisy sequences are discarded and those which are classified as nominal are saved for the purpose of state estimation or some other predictive maintenance procedure. toward acoustic noise type detection based on qq plot statistics 573 the algorithm developed in this research is seen as a part of a larger system of state estimation and fault detection mechanism of rotating elements in thermal power plants based on acoustic signals. it has been tested on real recordings taken in thermal power plant kostolac a1 in serbia, on a specific fan mill which is a part of coal grinding subsystem. it has been shown that state estimation of impact pates within a mill is possible only by using recordings from a microphone placed in the vicinity of the mill [9]. however, it has also been shown that noise can significantly influence the classification results. the purpose of this algorithm is to conduct signal preprocessing, so that the noise-free samples of the acoustic signals can be used for state estimation of impact plates of the mill. this paper is structured as follows. section 2 contains theoretical description of the algorithm used, mainly qq plots and neyman-pearson method of hypothesis testing. section 3 contains the description of the real industrial coal grinding subsystem in thermal power plants on which this algorithm has been tested. in section 4 the detailed results of the algorithm are given. here, the algorithm has been tested on nominal and noisy signals. furthermore, the effect of the change of certain parameters of the algorithm has been examined, as well as upgrade of the algorithm which enables it to be used for classification and not just noise detection. finally, the conclusions are presented in section 5. 2. qq plot as a tool for noise detection in nominal, stationary operation of the system it is assumed that the statistical parameters of the measured signals will remain constant. if, on the other hand, an event occurs that causes a deviation from nominal state (e.g. nonstationary ambient noise), statistical parameters of the recorded signals are expected to change in a certain way. therefore, the probability distribution of the recorded signal in nominal regime is going to be different from the distribution of the signal which is polluted with noise. this change is going to depend on the duration and the type of noise, so the statistical parameters can be used not only for noise detection, but for noise classification as well. 2.1. qq plot a very efficient graphical tool which is used to compare the expected and obtained probability distribution is a qq plot method [10]. this graph is obtained by plotting quantiles of the measured signal against the quantiles of the expected probability distribution. if the two distributions are similar, all the points in qq plot will approximately lie on the line . figure 1 shows a qq plot of an experimentally obtained zero mean unit variance gaussian distribution against its theoretical expectation. the application of this type of data inspection allows not only the comparison of two probability distributions, but also the identification of the distribution of recorded model. for example, if outliers occur at the end of the line, this means that the measured distribution has lager (or smaller) tails than the expected distribution. if all dots lie on the line, but the angle is not 45 o , then the variance of the expected distribution is not the same as in the measured signal. 574 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev fig. 1 experimentally obtained gaussian samples plotted against the theoretical distribution. fig. 2 contaminated gaussian distribution in time domain (upper left) with the appropriate qq plot (upper right) and laplace distributed sample data in time domain (lower left) with its qq plot (lower right). using these rules one can easily infer the shape of the probability distribution as a function of the expected distribution. for example, a gaussian signal polluted with noise is expected to contain large tails on the qq plot, as in fig. 2 (up). on the other hand, if the distribution of experimentally obtained signal is significantly different in nature than -3 -2 -1 0 1 2 3 -3 -2 -1 0 1 2 3 normal theoretical quantiles n o rm a l d a ta q u a n ti le s qq plot 0 200 400 600 800 1000 -5 0 5 n[sample] x [n ] -4 -2 0 2 4 -5 0 5 normal theoretical quantiles c o n ta m in a te d d a ta q u a n ti le s 0 200 400 600 800 1000 -5 0 5 n[sample] x [n ] -4 -2 0 2 4 -5 0 5 normal theoretical quantiles l a p la c e d a ta q u a n ti le s toward acoustic noise type detection based on qq plot statistics 575 the expected distribution, one will expect the deviation from axis for both lower and higher values of quantiles. this is shown in fig. 2 (down) where laplacian distributed experimental samples are plotted against the gussian distribution. the graph indicates that the obtained samples have higher values than the gaussian distribution will indicate and there is a curve for lower values as well. if the measured samples form a distribution ( ), an ordered nondecreasing sequence can be obtained, where for . here, represents the number of samples taken. by observing the ordered sequence , the formula for conditional probability can be obtained [8] which calculates the probability that measurement will have the rank in the said sequence: ( ) ( ) ( )( ( )) (1) 2.2. hypothesis testing qq plots in this research are used to represent the relationship between the measured signal distribution and the distribution of the signal in nominal working conditions. for this reason hypothesis testing is implemented in order to decide, based on the available data, whether the assumption of nominal working conditions is correct. if not, then the signal is considered polluted by noise and is discarded. the noise detection algorithm developed in this research relies heavily on eq. (1). in order to successfully implement it several initial calculations need to be performed. first the expected probability distribution in nominal regime (when there is no noise) needs to be established. then, after calculating nominal probability density function , the discriminant boundaries should be determined. if all the samples of the qq plot lie within these boundaries, then the recorded signal is in nominal working condition, i.e. there is no noise. if, on the other hand, points on the qq plot find themselves beyond the calculated boundaries, the fault has occurred, and the recorded samples are dismissed. there are two objectives which must be taken into account when establishing valid bounds on the qq plot. the first objective is maximization of the probability that the noise-free recordings will be classified as valid. the second objective is minimization of the probability that faulty recordings will be falsely classified as valid. therefore, a tradeoff needs to be made, and as a solution a variation of neyman-pearson method [11,12] for hypothesis testing has been chosen. this means that the probability for the desired efficiency under nominal conditions has been fixed. in the literature this value is usually adopted in the range between and . in this paper the value has been taken. therefore, lower and upper bounderies ( and ) are calculated so that the following condition is satisfied: ∫ ( ) ( ) ( ) (2) where the probability density function ( ) can be expressed using the bayesian formula: ( ) ( ) ( ) ( ) (3) 576 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev 3. case study coal fueled thermal power plants play a very important role in energy production worldwide and are the number one energy provider in serbia. for that reason an increase of productivity and work life of an entire plant, as well as its subsystems, is of great economical importance. coal grinding subsystem is one of the key parts of thermal power plant and is responsible for pulverization of coal, so it can be used in a burner system. in thermal power plant kostilac a1 in serbia fan mills used for coal pulverization have ten impact plates which rotate around the center. pulverization occurs as a result of friction between the plates and the chunks of coal within the mill. when the coal is grinded into a fine powder it is transported into a burner system where it is used as a fuel. the particles which are not small enough return back into the mill where they are additionally pulverized. after several weeks the impact plates within the mill get worn due to constant impact with coal chunks and rock and the efficiency of the mill starts to decrease. this is when the maintenance needs to be performed or other more serious problems and malfunctions will occur. the algorithms which can detect the moment the maintenance is needed based on the recorded acoustic signals have already been developed. they, however, are unable to perform their function when the noisy measurements are provided, which often happens with acoustic signals in a real industrial environment. mills in thermal power plants produce high intensity noise and they are located in the vicinity of other mills of the coal grinding subsystem. therefore, the acoustic environment in which the recordings are measured is extremely complex. even with all this in mind, the frequency features of this noise are very informative for state estimation of impact plates within the mills. however, given that the area around the mill consists of a large number of other actuators, valves, pipes, pumps, additional works such as welding, repairs, maintenance and the like, are quite common. at the same time, the sound recording is being enriched by sporadic impact of larger chunks of coal. these occurrences contaminate acoustic recording and, considering that their statistics are not included in the training sets used for impeller state estimation algorithms, they can cause the algorithm to make a wrong decision or, at the very least, cause a large time delay in making a correct decision. for this reason it is of great importance to develop techniques for detection and, if possible, classification of contamination in the acoustic recording. acoustic signals used to demonstrate the results of the proposed algorithm are recorded in different acoustic surroundings of the mill. one part of these recordings is taken in nominal working conditions in which, other than the noise from the mills and other rotating elements, there are no other sources of contamination. the second group of recordings consists of nominal sound sources as well as the sound of people talking in the vicinity of the microphone. the third group of signals contains nominal sound as well as the sound produced during welding and repair of the steam lines near the mill. the noise detection algorithm developed in this research has been tested on real acoustic signals recorded in thermal power plant kostolac a1 in serbia. there are 10 impact plates within the mill for which the noise detection algorithm has been tested and the recorded signal has the sampling frequency of . the length of the obtained recording is approximately 20 minutes. this recording consists of intervals in which the system is in nominal regime, as well as intervals when the artificially created noise has been used to pollute the recording. toward acoustic noise type detection based on qq plot statistics 577 4. results the proposed algorithm is tested in several steps. first the learning part of the algorithm is conducted in which the recordings in nominal regime are analyzed. in this way the nominal probability density function , as well as the discriminant boundary for nominal recordings are obtained. after that, the algorithm is tested on both contaminated and nominal samples in order to determine how prone it is to false classification. the effect of window length on proposed algorithm is analyzed as well. finally, an attempt has been made to classify the obtained noise and to determine whether the impulse disturbance or speech contamination has occurred. 4.1. nominal recordings as it is stated earlier, the initial part of the algorithm is a learning process in which sufficiently long signal in nominal regime is used to approximate the nominal probability density function. after that the hilbert transform of the signal is performed in order to obtain an envelope of the signal. there are several ways to approximate the probability density function (pdf) of the obtained sequence. one is by observing the scaled histogram of the signal, and the other is using the method of kernel functions. the latter method is chosen in order to obtain a smoother version of the estimate without a significant increase in computational complexity. for pdf estimation an epichenkov kernel function is used due to the fact that it is most commonly applied in the literature because it minimizes the mean square error. as expected, the pdf estimate obtained in this way roughly resembles the shape inferred from the histogram. after estimating pdf of a noise-free signal, the next step is to determine the boundaries of a qq plot from eq. (2). seeing how all the samples of a hilbert transform of the signal are positive and the expected behavior of a noisy signal would be a larger variance and a greater mean value (with respect to noise-free parameters) a slight simplification of (2) can be implemented, for the sake of easier numerical calculations: ∫ ( ) (4) the lower classification boundary does not need to be determined because when the noise occurs, the points on the qq plot are expected to drift above the line. therefore, eq. (4) is used for the purpose of noise detection and boundary calculation. the resulting qq plot of the samples in nominal regime and the calculated boundary are shown in fig. 3. fig. 3 qq plot of nominal recorded quantiles with respect to nominal expected quantiles, with boundary . 0 0.2 0.4 0.6 0 0.2 0.4 0.6 f nom -1 n o m in a l d a ta q u a n ti le s 578 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev 4.2. noisy recordings testing the algorithm as a tool for noise detection is conducted on the part of the signal which is 12 seconds long and whose hilbert transform is shown in fig. 4. this signal contains dominant sections of nominal regime (blue), sections contaminated with speech (green) and samples which contain impulse disturbance (red). in this way all the aspects of noise detection algorithm are tested. the hilbert transform is applied in order to obtain an envelope of the signal. fig. 4 part of the recording on which the algorithm has been preliminary tested. blue represents the nominal regime, green represents the part of the signal contaminated with speech, and red represents the part of the signal contaminated by impulse disturbance. the testing recording has been separated into smaller pieces obtained using window the size of 1sec, with overlap of 50%. each window has been tested for noise, and the noisy recordings have been dismissed. all the windows which include only the nominal behavior without the noise have qq plots which resemble the shape shown in fig. 3. all the points of the plot are below the discriminant boundary and are therefore classified as noise-free samples. the effect of speech contamination on the qq plot depends heavily on the percentage of contaminated signal which is enveloped within the window, as shown in fig. 5. in case when the windowed signal consists exclusively of speech contaminated samples (fig. 5 down), its qq plot has quantiles which lie on an approximately straight line with angle larger than . this indicates that the variance of the recorded signal, as well as its mean value, is larger than expected. also, most of the samples lie above the discriminant line which means that the algorithm has detected the noise. the situation is not so clear when only part of the window which is examined contains speech contaminated samples. in that case the angle of the plot is lower and, depending on the amount of speech included in the window, sometimes all the quantiles lie below the discriminant line. this means that the contamination has not been detected (fig. 5 up). 0 2 4 6 8 10 12 0 0.5 1 1.5 t [sec] x h ilb e rt nominal impulse disturbance speech contamination toward acoustic noise type detection based on qq plot statistics 579 fig. 5 speech contaminated samples in time domain (left) and the appropriate qq plot (right). upper figures show the behavior of the plot when only small part of the speech contamination is encompassed in the window. central figures show the behavior when about 50% of the window contains contamination, while lower figures show what happens when the contamination is present in the entire windowed signal. with impulse disturbance the problem becomes much simpler and the algorithm manages to detect the contamination regardless of the percentage of noisy samples in the window. the nature of impulse disturbance is so abrupt that even a small number of samples encompassed within a window is enough to significantly change the statistical parameters. the appropriate qq plot of this is shown in fig. 6. 0.5 1 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 t [sec] x h ilb e rt 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 f nom -1 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 t [sec] x h ilb e rt 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 1.2 f nom -1 2 2.2 2.4 2.6 2.8 3 0 0.2 0.4 0.6 0.8 1 1.2 t [sec] x h ilb e rt 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 1.2 f nom -1 580 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev fig. 6 samples which contain impulse disturbance in time domain (left) and the appropriate qq plot (right). the classification results of the algorithm are presented in table 1. while classifying the nominal samples and samples which contained impulse disturbance the algorithm has achieved accuracy of 100%, while speech contamination has a lesser percentage of detection. this is due to the fact that the statistical parameters of the windowed signal do not vary considerably with respect to the nominal regime when only a small part of the window contains speech contamination. this is precisely what happened in those 2 windowed parts of the signal which were wrongly classified. table 1 results of the noise detection algorithm nominal recordings speech contamination impulse disturbance classified as nominal 13 (100%) 2 (25%) 0 classified as noisy 0 6 (75%) 4 (100%) 4.3. length of the window adjustment the previous analysis suggests that the proposed algorithm easily detects impulse disturbances, but speech contamination can be somewhat more elusive. in the given 8.5 9 9.5 0 0.5 1 1.5 t [sec] x h ilb e rt 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 f nom -1 9.5 10 10.5 0 0.5 1 1.5 t [sec] x h ilb e rt 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 f nom -1 toward acoustic noise type detection based on qq plot statistics 581 example, out of 8 windowed signals contaminated with speech, the algorithm cannot correctly classify two of them. the problematic windowed signals are at the beginning and the ending of the speech sequence and incorrect classification is due to the fact that there is a small percentage of contaminated samples inside the window. one way to correct this error is by changing the length of the window. the noise detection results as the length of the window is changed are given in table 2. table 2 changeable length of the window tested on speech contaminated signals window length classified as nominal classified as noisy total number of windowed signals 1 (17%) 5 (83%) 6 2 (25%) 6 (75%) 8 2 (13%) 13 (87%) 15 31 (37%) 52 (63%) 83 one thing which is obvious from the results is the fact that the number of speech contaminated windowed signals increases as the length of the window decreases. this is important for statistical significance of the experiment. however, with smaller number of samples inside the window, the qq plots are not as representative as they are for larger number of samples. the table shows that for window sizes between 1.5s and 0.5s only one or two windowed signals are wrongly classified as nominal, and those correspond to the beginning or the end of the sequence, as discussed previously. therefore smaller length of the widow will yield statistically better results because higher percentage of signals will be correctly classified as noisy. by continuing to decrease the length of the window, however, the algorithm starts to behave inconsistently. for window length of 0.1s the percentage of misclassified signals drastically increases. this is due to several factors. first of all, qq plots have fewer samples and are therefore less accurate. secondly, the dynamics of speech is such that usually the gaps between the words, and sometimes even within a single word, are larger than 0.1s. therefore there are a significant number of windowed signals which do not contain any information about the speech. furthermore, while other window lengths correctly classify all nominal recordings and all impulse disturbance recordings, for misclassification occurres not only for speech contaminated signals, but for nominal signals as well. 4.4. noise detection and classification from fig. 5 and 6 it is clear that two different types of noise present themselves quite differently on the qq plot. with this in mind it might be possible to classify which type of noise has occurred when the algorithm detects the presence of contamination. the way in which this can be done is by determining another classification line, as in eq. (4), but this time with respect to speech contaminated signals, rather than nominal recordings. in this way two classification lines are obtained, one which classifies nominal recording from the contaminated ones, and the other which detects whether contaminated recordings have impulse or speech disturbance, as shown in fig. 7. in the upper graph it can be seen that nominal recordings do not trigger any errors. speech contaminated recordings can be seen in the lower left part of the figure, and they fit ideally between two classification 582 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev lines. impulse disturbance, on the other hand, has the quantiles above both discrimination lines, as can be seen in the lower right part of the figure. this upgraded algorithm for noise detection and classification has been tested on the recording from fig. 4 and the results are shown in table 3. as can be seen, the impulse disturbance has been impeccably classified as such. nominal recordings have a high percentage of nominal classification as well. speech still has the lowest detection and classification percentage due to the facts discussed earlier. table 3 results of the noise detection algorithm nominal recordings speech contamination impulse disturbance classified as nominal 100% 25% 0 classified as noisy 0% 55% 0 classified as impulse noise 0% 20% 100% fig. 7 qq plot with 2 classification lines. when the samples of a qq plot go above the red line, the noise has been detected. however, if samples are above the black line, this means that impulse disturbance has occurred, and when they are between the red and blue classification lines the speech contamination has occurred. 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 f nom -1 nominal data quantiles   0 0.2 0.4 0.6 0.8 1 1.2 0 0.5 1 1.5 f nom -1 speech data quantiles 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 f nom -1 impulse data quantiles toward acoustic noise type detection based on qq plot statistics 583 5. conclusion in this paper an algorithm was presented which is capable of detecting the occurrence of noise in acoustic signals and is able to classify this noise with high percentage of accuracy. the main tool used for this purpose is a qq plot with probability density function estimates and hypothesis testing algorithms. this research has been conducted with a purpose of making acoustic signals more broadly usable in the industry as a tool for predictive maintenance and state estimation of machines. the algorithm has been tested in a real industrial environment in thermal power plant kostolac a1 in serbia, and is shown to be capable of detecting whether the noise has occurred, and to classify whether the impulse disturbance or speech contamination is in question. furthermore, the influence of the length of the window used on the efficiency of the algorithm is tested as well. successful detection and classification is much lower on speech signals than on impulse disturbance due to the fact that the intensity of the speech, as well as words that are spoken directly influence the amount of contamination of the nominal signal. therefore, if someone speaks quietly or makes long pauses while speaking, the chances are that the proposed algorithm will not manage to detect all the polluted parts of the signal. also the percentage of contamination which is included in the analyzed window affects the detectability of the contamination, so the beginning and an ending of a speech contaminated sequence may not always be detectable. this can be improved by increasing the overlap between the windows and decreasing the size of the window, but only up to a point. the algorithm proposed in this paper is an introductory research of a preprocessing tool that should be capable of detecting and isolating acoustic noise in an industrial environment with a purpose of making acoustic recordings more compelling for usage in industrial predictive maintenance algorithms. further research is going to contain robustification of the algorithm and improvement of speech detection possibly by using correlation analysis or some similar tools. also, a pdf estimation of noisy signals based on their qq plots is something that might yield more robust results as well. acknowledgement: this paper is a result of activities within the projects supported by serbian ministry of education and science iii42007 and tr32038. references [1] s. vujnović, a. al-hasaeri, p. tadić and g. kvašĉev, “acoustic noise detection for state estimation”, in proceedings of the 3rd international conference on electrical, electronic and computing engineering (icetran 2016), zlatibor, serbia, june 13 – 16, 2016, aui4.6 1-5. [2] r. k. mobley, an introduction to predictive maintenance, 2nd ed. amsterdam, netherlands: butterworthheinemann, 2002. [3] m. a. stošović, m dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski, “characterization of nonlinear loads in power distribution grid,” facta universitatis, series: electronics and energetics, vol. 29, no. 2, pp. 159-175, 2016. [4] d. stevanović, p. petković, “utility needs smarter power meters in order to reduce economic losses,” facta universitatis, series: electronics and energetics, vol. 28, no. 3, pp. 407-421, 2015. [5] m. j. crocker, handbook of noise and vibration control, hoboken, new jersey: john wiley & sons, 2007. [6] z. su, p. wang, x. yu, z. lv, "experimental investigation of vibration signal of an industrial tubular ball mill: monitoring and diagnosing," miner eng, vol. 21, no. 10, pp. 699-710, 2008. 584 s. vujnović, a. marjanović, ţ. đurović, p. tadić, g. kvašĉev [7] n. baydar, a. ball, "a comparative study of acoustic and vibration signals in detection of gear failures using wigner-ville distribution, "mech syst signal pr, vol. 15, no. 6, pp. 1091-1107, 2001. [8] g. s. kvascev, z. m. djurovic, b. d. kovacevic, "adaptive recursive m-robust system parameter identification using the qq-plot approach," iet control theory & applications, vol. 5, no. 4, pp. 579-593, 2011. [9] s. vujnovic, z. djurovic, g. kvascev, "fan mill state estimation based on acoustic signature analysis," control engineering practice, vol. 57, pp. 29-38, 2016. [10] j. j. filliben, "the probability plot correlation coefficient test for normality," technometrics, vol. 17, no. 1, pp. 111-117, 1975. [11] k. fukunaga, introduction to statistical pattern recognition, 2nd ed. san diego, california: academic press professional, 1990. [12] s. theodoridis, k. koutroumbas, pattern recognition, 3rd ed. orlando, florida: academic press, 2006. instruction facta universitatis series: electronics and energetics vol. 31, no 3, september 2018, pp. 367-388 https://doi.org/10.2298/fuee1803367d nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets vojkan davidović 1 , danijel danković 1 , snežana golubović 1 , snežana djorić-veljković 2 , ivica manić 1 , zoran prijić 1 , aneta prijić 1 , ninoslav stojadinović 1,3 , srboljub stanković 4 1 university of niš, faculty of electronic engineering, niš, serbia 2 university of niš, faculty of civil engineering and architecture, niš, serbia 3 serbian academy of sciences and arts, branch niš, niš, serbia 4 university of belgrade, institute of nuclear sciences "vinča", belgrade, serbia abstract. in this paper we provide an overview of instabilities observed in commercial power vdmosfets subjected to irradiation, nbt stress, and to consecutive exposure to them. the results have indicated that irradiation of previously nbt stressed devices leads to additional threshold voltage shift, while nbt stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. this points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. it has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms. key words: negative bias temperature instability (nbti), irradiation effects, responsible mechanisms, oxide trapped charge, interface traps, spontaneous recovery 1. introduction development of advanced electronic industry is based on combining two concepts: more moore (miniaturization) and more than moore (diversification), i.e. on combining of system-on-chip and system-in-package concepts, thus leading to higher value systems. second concept includes integration of different devices, such as passives, analog/rf, power devices, sensors and actuators and biochips. among these, power vertical double-diffused metal oxide semiconductor (vdmos) transistors exhibit a received april 29, 2018 corresponding author: snežana djorić-veljković, university of niš, faculty of civil engineering and architecture, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: snezana.djoric.veljkovic@elfak.ni.ac.rs) 368 v. davidović, d. danković, s. golubović', et al. number of advantages, such as high switching speed, high current driving capabilities, high breakdown voltage, high input impedance and high thermal stability, which make these devices attractive for various application in power control in industrial electronics (automation, robotics), auto industry (automotive electronics), nuclear power plants, communication satellites, military and civil airplane industry, and military equipment (tanks, ships, submarines). in many of these applications devices may be subjected to stress or harsh environment conditions. accordingly, investigation of their reliability and related effects is of high importance [1-11]. because of its superior switching characteristics which enable operation at high frequencies, the power vdmosfet is attractive as a switching device especially in communication satellites that require many extremely small, lightweight power supplies for supplying various components, circuits and systems. namely, high-frequency operation of power supplies enables reduction of their weight and volume through the use of smaller passive components (transformers, choke-coils, and capacitors), so the power vdmosfets are suited for these applications. however, during a communication satellite operation of several years, assembled devices can accumulate the total dose up to 100 gy (sio2), while in high orbits this dose can be even 10 kgy (sio2) [12]. therefore, the most important requirement for power vdmosfets assembled in electronic systems for application in radiation environment is high radiation tolerance. the ionizing irradiation may cause degradation of power vdmosfets electrical parameters, such as threshold voltage shift, reduction of transconductance, increase of leakage currents and reduction of breakdown voltage [13, 14]. threshold voltage shift (vt) is the most serious problem in these devices since it may cause change of operation mode from enhancement to depletion in n-channel devices or dramatic reduction of current driving capability in p-channel ones. threshold voltage shift is known to increases with total dose received and in many investigations it is shown that the main irradiation effects on electrical parameters are caused by the creation of positive gate oxide charge (not) and interface traps (nit) [15]. besides operation in the irradiation environment, in a number of application devices are routinely operated at high voltage and current levels, which lead to both self heating and increased gate oxide fields [16]. negative bias temperature instability (nbti) is a phenomenon that is commonly observed in p-channel devices operated in the temperature range 100-250 c at negative gate voltages producing gate oxide electric fields 2-6 mv/cm [17-20]. note that electric fields and temperatures that cause nbti are typically found during the device burn-in tests [21, 22]. nbt stress may lead to degradation of important electrical parameters of power vdmosfets. among these the negative vt caused by increase of not and nit is the most serious reliability problem [23]. note that more significant negative vt is obtained at higher temperatures and/or higher gate voltages, i.e. higher oxide electric fields [24-28]. although nbti phenomenon is known for more than a half of the century, the reliability issues associated with nbti have resurfaced in the past two decades due to convergence of several factors resulting from the device scaling. this is the reason that vast majority of recent extensive investigation of nbti has been focused on the related phenomena in ultrathin gate dielectrics layers, and only few research groups seem to have addressed the nbti in thick gate oxides [24, 29, 30]. however, in spite of device dimensions being generally scaled down, there is still high interest in ultra-thick oxides nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 369 owing to widespread use of mos technology for the realization of power devices, so the investigation of nbti in vdmosfets is of high interest. it should be emphasised that pmos transistors can be subjected to a single stress, but also in numerous applications to simultaneous or consecutive nbt and irradiation stresses. namely, if p-channel power devices which exposed to radiation operate at higher temperature or at maximum power, the mechanisms responsible for both radiation effects and nbt instability can be activated. for example, satellite electronic equipment can be exposed to cosmic irradiation during a long time without air convection cooling. so, the active p-channel mos devices can be irradiated and in the same time exposed to nbt stress, while the back-up devices (which do not operate) are only irradiated. it is known that irradiation effects and nbt instabilities in power mos devices have been extensively studied, but they have been investigated separately. though, the results of elevated temperature effects on the radiation response have been reported in some studies performed in order to estimate the mos device behaviour in real irradiation environment [31, 32], but the p-channel devices used in those studies were irradiated and/or annealed under the positive gate bias. regarding the fact that devices which operate in real applications can be stressed and recovered under different conditions and that final effects depend on specific applications and device mission, in this paper we present the results of consecutively nbt stressed and irradiated p-channel power vdmos transistors. in this way the effects of specific kind of stress in devices previously subjected to the other kind of stress are investigated. however, for proper understanding of the effects induced by applied stresses, it is important to analyze in detail not only the changes in the electrical parameters, but also the mechanisms responsible for the observed effects. clarification of behaviour and nature of oxide and interface defects created during and after the stress is very important in order to improve device stability and resistivity to applied stress. that is why this paper is aimed at analysis of reliability problems in power vdmos transistors caused by nbt stress and radiation, as well as at related degradation and underlying mechanisms. the most vulnerable parts of the vdmos transistors subjected to extreme, harsh environmental conditions or to the stress are the parts based on dielectrics (sio2 and sio2-si interface), as both nbt stress and irradiation of vdmos transistors lead to creation of oxide and interface defects causing significant degradation of electrical parameters. it is of great interest to know the nature of the defects, and these are still in the focus of many investigations aimed at clarifying responsible mechanisms and improving possibilities of predicting device behaviour in specific application. 2. radiation effects as already mentioned, the threshold voltage shift is, undoubtedly, the most serious problem for irradiated devices since it may cause change of operation mode from enhancement to depletion in n-channel devices (thus leading to faulty operation of switching power supplies), or dramatic reduction of current driving capability in pchannel ones. even the radiation-hardened devices may fail due to reduction in currentdrive capability owing to channel carrier mobility degradation and/or positive vt [33]. the irradiation effects in mosfets have been extensively investigated by many researchers in the last decades. in our early study we have examined radiation response of 370 v. davidović, d. danković, s. golubović', et al. commercially available n-channel power vdmosfets efl1n10 manufactured by "eimicroelectronics", niš, serbia, which were realized in a standard si-gate technology with the hexagonal cell geometry and gate oxide thickness of 100 nm. gamma radiation was performed in co-60 source (dose rate 0.04 gy/s) at room temperature for two groups of the devices (without and with gate bias applied vg = + 9 v). drains and sources of all devices were grounded during irradiation. the changes of the threshold voltage and mobility () during the irradiation of the devices [2] are presented in fig. 1(a), where are also comparatively presented the results for similar devices [34]. observed significant threshold voltage shift and mobility reduction in the devices were much more pronounced in the case of positive gate bias applied. it should be noted that the similar behaviour of these electrical parameters of the power vdmos transistors has also been observed by other investigators and it has been generally established as a typical behaviour [14, 15, 33]. the radiation tolerance of the power vdmos transistors, as a very important requirement, can be determined for the maximum operating positive bias applied as this is the worst case scenario. as can be seen in fig. 1(a), the threshold voltage shift becomes equal to threshold voltage (vt = vt) at the total dose of about 250 gy (denoted point at which investigated devices change their operating mode from enhancement to depletion). therefore, the radiation tolerance of used commercial devices is of about 250 gy, which is half the value required for their application in communication satellites with life spans of ten years [2]. 10 100 1000 -18 -12 -6 0 10 100 1000 0.6 0.8 1.0 1.2 1.4 1.6 0.5 v t v t = v t v g = 0 v v g = 9 v v g = 10 v (sakai & yachy)  v t ( v ) dose (gy) -9 (0)   (0 ) v g = 0 v v g = 9 v v g = 10 v (sakai & yachy) 10 100 1000 0.1 1 10 vg = 9 v vg = 0 v vg = 10 v (sakai &yachy) n it  n o t ,  n it ( 1 0 1 1 c m -2 ) dose (gy) n ot a) b) fig. 1 gamma-irradiation induced (a) vt and /0; (b) not and nit in n-channel power vdmosfets (efl1n10). considering that the main radiation effects on electrical parameters are caused by the creation of both not and nit , the changes in their densities (not and nit ) are very often analysed and discussed in the literature [8, 15, 33, 35-37]. in fig. 1(b) not and nit in the devices which were irradiated in our experiment are presented. it should be emphasized that reliability screening is important in achieving high reliability of vdmosfets for application in radiation environment. screening is normally performed on all devices in order to reduce the possibility of infant mortality. the standard reliability screening for these devices includes „burn-in tests“ (us milstd 883, test method 1015), such as: high temperature reverse bias (htrb), high nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 371 temperature gate bias (htgb) and high temperature storage life (htsl) stresses [38]. however, it was shown that htgb stress affects the radiation response in mos transistors. this was the reason for modification of the standard qualification testing for application of mosfets in radiation environment and for imposing the requirement for radiation qualification testing after burn-in (us mil-std 883, test method 1019). our results [22, 39, 40] which have shown that burn-in tests could have a significant impact not only on the radiation response of vdmosfets, but also on annealing of radiation defects, have confirmed the need for modification of qualification testing. in the another experiment also commercially available irf510 (with nominal gate oxide thickness of 100 nm, realized in a standard si-gate technology) and efl1n10 devices (from different batches a and b) were irradiated by co-60 source (dose rate 0.13 gy/s) at room temperature with gate bias applied vg = + 10 v. the changes of the threshold voltage and mobility during the irradiation of efl1n10 (batch a and b) and irf510 devices [22] are presented in fig. 2, and fig. 3, respectively, while underlying changes of not and nit are presented in fig. 4. in these figures the results for reference devices and for devices subjected to htrb (vd = 80 v, t = 125 c for 168 h) and htgb (vg = 20 v, t = 125 c for 168 h) stresses are compared. it can be seen that vt was more pronounced in efl devices, indicating that irf devices were better in view of radiation tolerance, while there was almost no difference in mobility reduction. 0 250 500 750 -8 -4 0 efl(a) irf vg = + 10 v  v t ( v ) dose (gy) efl(b) htrb htgb reference fig. 2 gamma-irradiation induced vt in efl-batch a, efl-batch b and irf n-channel power vdmosfets in htrb and htgb stressed and reference devices [40]. it can be seen that there was almost no difference between the htrb and htgb stress effects on radiation response of investigated devices. the results which suggested that radiation response appeared to be almost independent of device pre irradiation stress biasing were obtained also for field -oxide mosfets [41]. as can be seen in figs. 2 and 3, vt during irradiation was slightly larger in htrb stressed devices, while the mobility reduction was slightly larger in htgb stressed ones. similar behaviour of vt was obtained for irradiated field-oxide mosfets [41]. as can be seen from fig. 4, the build-up oxide trapped charge appeared to be almost independent of device pre irradiation stress. on the other hand, the build-up of interface traps was somewhat less pronounced in the stressed device. for explanation of such behaviour of not and nit the chain of mechanisms, in which the diffusion of hydrogen 372 v. davidović, d. danković, s. golubović', et al. related species (originating either from package inside or gate oxide adjacent structures) from the bulk of the oxide towards the interface, has been proposed. 0 250 500 750 0.4 0.6 0.8 1.0 efl(a) irf v g = + 10 v    ( 0 ) dose (gy) efl(b) htrb htgb reference fig. 3 gamma-irradiation induced /0 in efl-batch a, efl-batch b and irf n-channel power vdmosfets in htrb and htgb stressed and reference devices [40]. in many investigations of p-channel power mosfets radiation response, the role of not and nit were also emphasized. in fig. 5(a) the radiation induced threshold voltage shift (vtnh) and degradation of the hole mobility /0 in non-hardened irf9130 and threshold voltage shift in radiation hardened frm9130 (vtrh) p-channel power mosfets are presented [14]. 200 300 400 1 10 irf irf efl(b) irf efl(b) v g = 10 v  n o t ,  n it ( 1 0 1 1 c m -2 ) dose (gy) efl(a) irf n ot n it efl(a) reference htrb htgb efl(b) efl(a) efl(b) htrb reference htgb fig. 4 gamma-irradiation induced not and nit in efl-batch a, efl-batch b and irf n-channel power vdmosfets in htrb and htgb stressed and reference devices [40]. also, in the fig. 5(a) the contributions of the gate oxide charge (vot) and interface traps (vit) to the vtnh (for non-hardened devices) are presented. devices were irradiated at room temperature by co-60 gamma-ray source (dose rate of 0.2 gy(si)/min), with gates biased at vg = + 9 v, while source and drain terminals were grounded. unlike the nonhardened devices, vtrh of hardened devices is small for total dose below 400 gy and mobility degradation is less than 4%. both gate oxide charge (not = vot cox/q) and nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 373 interface traps (nit = vit cox/q) are positive, that gives rise to negative vtnh, i. e. vtnh = vot + vit . 0 150 300 -3.0 -1.5 0.0 0.5 1.0 v trh  /  0 (zupac et al.) v g = 9 v v tnh v ot v it  v t ( v ) dose (gy) /  0  0 30 60 -0.6 -0.3 0.0 0 30 60 0 6 12  n o t ,  n it (1 0 1 0 c m -2) n it v g 0 v 10 v + 10 v dose (gy) n ot v g 0 v 10 v + 10 v  v t (v ) dose (gy) a) b) fig. 5 gamma-radiation induced (a) vtnh and /0 in non-hardened and vtrh in hardened p-channel power mosfet; (b) vt and corresponding not and nit (in inserted figure) in commercial p-channel power vdmosfets. in fig. 5(b) the radiation induced vt and behaviours of corresponding buildup of not and nit (in inserted figure) in commercially available irf9520 p-channel power vdmosfets irradiated at different gate bias applied are presented. although irradiation conditions and obtain results will be discussed in detail in sect. 4, it should be mentioned that significant negative vt induced by radiation also increases with total dose received and depends on gate bias applied. 3. nbt stress effects nbt stress-induced threshold voltage instabilities in commercial power vdmosfets, as well as the implications of related degradation on device lifetime have been extensively investigated in our research in the last decade [27, 42-44]. although in many experiments devices have been subjected to various nbt stress (static or pulsed) and annealing conditions [9, 23, 25, 45, 46, 48-52], in this section a part of results obtained during static nbt stress and annealing is presented, with attention to insight into the nbti as a result of sequential nbt stress and bias annealing steps. in these investigations commercial p-channel power vdmosfets transistors irf9520 (with current and voltage ratings of 6.8 a and 100 v) were used. these devices were built in standard silicon-gate technology with 100 nm thick gate oxide. devices have been stressed up to 2000 hours by applying negative voltages (30 – 45 v) to the gate, with drain and source terminals grounded, at temperatures ranging from 125 to 175 c. important details of used equipment for stress, annealing and measurement will be described in sect. 4. during nbt stresses vt of investigated p-channel power vdmosfets was more significant in the cases of higher stress voltage and/or temperatures [25]. the underlying phenomenon leading to the observed vt in the stressed devices is the stress-induced buildup of not and nit. typical time dependencies of stress induced buildup of not and 374 v. davidović, d. danković, s. golubović', et al. nit for different stress voltages at the temperature of 150 c and for different stress temperatures at stress voltage of 40 v are presented in fig. 6, while corresponding vt are presented in inserted figures. in these figures the results for nbt stressed devices during 2000 hours are presented. analysis has shown that vt time dependencies follow the t n power low, but with three different phases (that depends on the parameter n), which is indicated by the dashed lines (in inserted figures). in the first phase, parameter n depends on bias as well as on temperature, and varies from 0.4 to 1.14. in the second phase parameter n is almost independent on bias and temperature, and equals approximately 0.25 as obtained in all earlier nbti investigations [17, 24, 53, 54]. this phase begins earlier in devices stressed at higher voltages and/or temperatures, and might be even expected that the first phase disappears under more severe stress conditions. in the third (long stress) phase parameter n again becomes bias and temperature dependent, varying from 0.25 to 0.14. also, in fig. 6 could be observed that the buildup of not is more significantly pronounced than that of nit for each specific combination of temperature and stress voltage in all three stress phases. in addition, it could be seen that nit rapidly increases in the early phase, but slows down in the second phase and tends to more rapidly saturate than not . it should be emphasized that the strong correlation between time dependence of vt and corresponding not in all cases (all combinations of temperatures and stress voltages) was observed. on the other hand, such correlation between vt and nit time dependencies was not observed. this disagreement becomes more noticeable as the nbt stressing advances into the second phase and, especially, further into the third phase. therefore, time dependence of vt in investigated p-channel power vdmosfets seems to be mostly affected by nbt stress induced buildup of oxide trapped charge, which does not appear to be consistent with most of literature data emphasizing dominant role of stress induced interface traps [17, 24, 53]. in addition, it was shown that the effects of post-stress annealing (at various voltages and/or temperatures, during various time intervals), provided after each phase of nbt stress (1 st 3 rd ), depend not only on temperature and gate bias conditions, but also on status of the gate oxide and sio2–si interface, immediately after the stress [46]. namely, observed effects were affected by the densities of stress-induced not and nit and their spatial and energy distributions, number of potential trapping sites and quantities of reacting species available after the stress, quantity and distribution of new defects possibly created by preceding stress, etc. besides that, in order to further disclose the effects of post-stress and intermittent annealing on degradation associated to nbti, another experiment, in which devices were subjected to a five step sequence, was performed. in this experiment, commercial pchannel irf9520, and n-channel irf510 power vdmosfets were also used. irf510 transistors were also built in standard silicon-gate technology with 100 nm thick gate oxide. the experiment included three nbt stress steps interchanging with two bias annealing steps. namely, one week of nbt stressing with gate voltage of 40 v at t = 150 c was followed by one week of annealing without or with the gate bias applied, also at 150 c. after that, nbt stress and annealing were repeated, followed by final nbt stress. devices were annealed without or with gate bias applied (vg = +10 v or vg = 10 v). nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 375 it was shown that annealing with negative gate bias applied did not affect noticeably not and nit , while annealing performed under the zero and positive gate bias removed the portion of stress induced oxide charge, but created a new interface traps over to those that have been created during the preceding nbt stress. observed effects were more pronounced in the case of positive gate bias applied. therefore, evolutions of vt in p and n-channel power vdmosfets and corresponding evolutions of not and nit in pchannel transistors obtained during nbt stress and annealing under the positive gate bias applied are presented in fig. 7 and fig. 8, respectively. in these figures can be observed that majorities of the changes occurred only in an early stage of the annealing steps, as well as of nbt stresses. 0.1 1 10 100 1000 10 8 10 9 10 10 10 11 10 -3 10 -2 10 -1 0.1 1 10 100 1000 stress time (h) v g (v) t = 150 o c -30 -35 -40 -45 i v t i (v ) t = 150 o cv g (v) stress time (h) n ot n it -30 -35 -40 -45  n o t ,  n it ( c m -2 ) 0.1 1 10 100 1000 10 8 10 9 10 10 10 11 10 -3 10 -2 10 -1 0.1 1 10 100 1000 stress time (h) v g = 40 v t ( o c) 125 150 175 i  v t i (v ) t ( o c) v g = 40 v stress time (h) n ot n it 125 150 175  n o t ,  n it ( c m -2 ) a) b) fig. 6 time dependence of not and nit (and vt at inserted figure) for different: (a) stress voltages at the same temperature (150 c); (b) stress temperatures for the same stress voltage (vg = 40 v). in fig. 7 it can be seen that evolutions of vt were similar in both types (pand nchannel) of transistors, and that overall variations of vt over the entire stress and anneal sequence were greater in n-channel ones. besides that, in fig. 7(a) (vt in p-channel transistor) it can be seen that vt was significantly recovered, but the initial stress-induced δvt did not fall below 100 mv after both annealing. during repeated nbt stress the major portion of vt induced by the initial nbt stress is also quickly restored. the changes of δvt tend to decrease on each new repetition of annealing, indicating that there is a non-reversible component of δvt, which resulted from the portion of non-annealed stress-induced oxide-trapped charge and interface traps and new created interface traps. in fig. 8 it can be seen that the shapes of not mostly follow the shapes of vt over the complete sequence. this suggests that charge trapping/detrapping processes occurring in oxide bulk could be of primary importance for nbti in power vdmosfets. it should be emphasized that although recovery of vt during annealing was observed, it does not seem to be a true device recovery because only not decreases while nit simultaneously increases. this increase could be ascribed to a reversed drift direction of positively charged species. it should be emphasized that similar to radiation induced degradation, degradation induced by nbt stressing in power vdmosfets might be associated with gate oxides as reservoirs of hydrogen related species required for both passivation and 376 v. davidović, d. danković, s. golubović', et al. depassivation processes occurring at the sio2–si interface during and after the stress. accordingly, some elements of the approach applied in standard model of irradiation damage [15, 23, 55, 56] might be reasonable in considering the nbti in power vdmosfets. 0.0 0.1 0.2 0.3 0 40 80 120 160 160 120 80 40 0 v g = + 10 v v g = 40 v i  v t i (v ) 1 st stress 2 nd stress 3 rd stress anneal time (h) stress time (h) stressing 1 st anneal 2 nd anneal t = 150 o c annealing -0.2 0.0 0.2 0 40 80 120 160 160 120 80 40 0 v g = + 10 v v g = 40 v i  v t i (v ) 1 st stress 2 nd stress 3 rd stress anneal time (h) stress time (h) stressing 1 st anneal 2 nd anneal t = 150 o c annealing a) b) fig. 7 evolution of vt in power vdmosfets during complete sequence of nbt stressing and positive bias annealing steps in: (a) p-channel and (b) n-channel. 0 2 4 0 40 80 120 160 160 120 80 40 0 v g = + 10 v v g = 40 v  n o t ( 1 0 1 0 c m -2 ) 1 st stress 2 nd stress 3 rd stress anneal time (h) stress time (h) stressing 1 st anneal 2 nd anneal t = 150 o c annealing 0 2 4 0 40 80 120 160 160 120 80 40 0 v g = + 10 vv g = 40 v  n it (1 0 1 0 c m -2 ) 1 st stress 2 nd stress 3 rd stress anneal time (h) stress time (h) stressing 1 st anneal 2 nd anneal t = 150 o c annealing a) b) fig. 8 evolution of (a) not and (b) nit in p-channel power vdmosfets during complete sequence of nbt stressing and positive bias annealing steps. also, in fig. 8 it can be observed that the changes of not and nit tend to decrease during each new repetition, indicating that non-reversible components of not and nit tend to increase. namely, the repetition of nbt stress after annealing re-created the annealed portion of not , while removed the reversible component of nit . it is interesting that interface traps created during each annealing are almost completely removed during following nbt stress. the second and the third nbt stresses actually lead to decrease of nit to value approximately equal to one after the first stress. in this way nit remains almost on the same value as it was after the first nbt stress. besides, it could be noticed that the values of not are significantly higher than that of nit after each nbt stress. on the other hand, the values of not after annealing become almost the same as values of nit after nbt stresses, at these experimental conditions. nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 377 the observed changes could be ascribed to the available oxide trapped charge and interface trap precursors, as well as to the presence of hydrogen species that significantly contribute to the observed vt , not and nit evolution. 4. consecutive radiation and nbt stress effects the devices used in the investigation of consecutive irradiation and nbt stress were also the commercial p-channel power vdmosfets irf9520, whose important properties were presented in sect. 3. in this investigation two different experiments were performed: 1) after nbt stress the samples were irradiated (nbt-rad experiment) and 2) after irradiation samples were nbt stressed (rad-nbt experiment). in the first experiment nbt stress was followed by spontaneous recovery (24 hours), irradiation, by another spontaneous recovery (168 hours) and by thermal annealing. in the second experiment irradiation was followed by spontaneous recovery (24 hours), nbt stress, another spontaneous recovery (168 hours) and by thermal annealing. in both experiments, all stresses and recoveries, as well as thermal annealing were done under the same conditions. during nbt stresses and irradiations the source and drain were grounded. nbt stressing was performed in thermally stable heraeus chambers at 175 c (168 h) with device gates biased at vg = 45 v. chosen voltage value of 45 v enables to observe notable vt within a reasonable period of time. namely, stressing of these devices with gate voltage within the range found in manufacturer’s data sheet (maximal gate voltage 20 v), would lead to small degradation which would be notable after a long period (thousands of hours) [16]. chosen voltage value of 45 v exceeds the range of gate voltages allowed for application in the investigated devices, but it is within the range of gate voltages used for nbt stress experiments on these power devices. regarding the choosing of temperature, significant device degradation at room temperature can be observed only at stress voltages which are just few volts below the gate oxide breakdown voltage (70 v), and can be ascribed to tunnelling effects [57], while at t > 175 c, backward interface reactions can be activated [58]. it should be mentioned that in this study the nbt stressing was limited to 168 h with the aim of shortening the experiment. therefore the combination of bias and temperature value, as well as nbt stress duration was chosen in order to obtain optimal conditions for this investigation. the irradiation was performed at department of radiation and environmental protection at institute for nuclear sciences, vinča, serbia. the devices were gamma irradiated by co-60 (dose rate of the source was 0.5 gy(sio2)/min) up to a total dose of 75 gy (total duration of 150 min). the devices were irradiated without gate voltage applied, and with applied positive (+10 v) and negative (-10 v) gate voltage. the chosen voltage value of 10 v enables to enhance irradiation effects, and to simulate real cases of biased device in the working conditions. besides that, the chosen total dose of 75 gy (relatively low compared to very high doses that could be achieved in the devices assembled in satellites) provides to avoid that radiation effects in devices significantly surpass and masks the nbt stress effects. in addition, the thermal annealing (the final phase in both experiments), of all devices, was performed at t = 175 c during 168 hours without any bias applied. both spontaneous recovery were carried out at room temperature of t = 25 c, also, without any bias applied. 378 v. davidović, d. danković, s. golubović', et al. in order to detect and monitor the degradation during all phases of experiments, each one was interrupted after certain, predefined periods to measure the device transfer id-vgs characteristics. the highly precise source measurement units (smus) keithley 237 (for drain biasing and drain current measurement) and keithley 2400 (for sweeping the gate voltage), both controlled by pc over ieee 488 gpib were used for devices electrical characterization. it should be noted that all measurements were performed at room temperature. in figs. 9 and 10 are presented vt in p-channel power vdmosfets during the nbt stress irradiation and irradiation nbt stress experiment, respectively. all devices subjected to initial nbt stress in nbt stress-irradiation experiment follow the same degradation curve of vt . on the other hand, irradiation of virgin devices (in irradiation nbt stress experiment) has induced significant negative vt , which increased with total dose received and were dependent on the gate bias applied. in the case of zero bias applied, the value of vt was the lowest, while at gate bias applied of 10 v it was significantly more pronounced. at the same vt was somewhat more pronounced in the case of positive bias applied (vg =+10 v) than at negative bias applied (vg =-10 v) [11]. the underlying changes of not and nit , determined by the commonly used subthreshold midgap technique [59], during the nbt-rad experiment are presented in fig. 11, while underlying changes of not and nit , during the rad-nbt experiment are presented in fig. 12 [60]. it should be mentioned that the microscopic origin of the nbti related degradation as well as radiation related degradation was extensively investigated. namely, the changes of oxide trapped charge and interface traps, which lead to corresponding threshold voltage shift, could be explained by numerous models of the responsible mechanisms for these changes during nbt and gamma radiation stress, as well as during the annealing of stressed devices. in many models changes of not and nit are the result of electro-chemical processes that occur in the gate oxide and at sio2-si interface. these electro-chemical processes and underlying reactions are based on the charge traps precursors existing in the gate oxide and at sio2-si interfaces. some models include reactions at sio2-si interface involving holes and their transport through the oxide. besides that there are models which can properly explain results obtained in the investigations of nbti and radiation degradation, which are based on transport of hydrogen species (h • , h + , h2, oh • , h2o, h3o + ). the presence of hydrogen species is associated with the presence of hydrogen as a common impurity in mos devices. the result in this investigation can also be explained by mentioned models. mechanisms responsible for nbt stress induced changes of not and nit are bias dependent and thermally activated [9, 16, 20, 23, 24, 26-29]. interpretations of mechanisms responsible for degradation, very often, include various forms of model based on the assumption that previously passivated defects at sio2-si interface release hydrogen species which diffuse into the oxide and leave the interface traps [17, 19, 53, 61]. in these models dispersive hydrogen species motions were proposed, due to various assumptions related to trap controlled hydrogen migration in the oxide [62-65]. in many investigations of nbti, there were proposals that interface trap creations could be reaction controlled mechanism rather than diffusion controlled one [18]. generation of positive charge in the oxide bulk due to hole trapping has been reported in addition to generation of interface traps [18, 62, 63]. nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 379 although there was a controversy on the role of trapped charge in nbti [18], numerous studies suggested that hole trapping dominantly contributes to degradation [20, 66, 67]. this might lead to the proposal of a new charge trapping model, which makes connection between the nbti degradation and the creation of switching oxide traps, and that is consistent with recovery data showing dispersion over the wide range of time. 0 50 100 150 0.0 0.3 0.6 0.9 1.2 0 40 80 120 0 100 0 50 100 150 i v t i (v ) stress time (h) v g = 45 v 0 20 t = 175 o ct = 175 o c t = 25 o c t = 25 o ct = 25 o c time (h) recovery1 nbt stress irradiation irradiation time (min) v g + 10 v 0 v 10 v time (h) recovery 2 annealing irradiated at -10 v annealing time (h) previously irradiated at +10 v fig. 9 behaviour of vt in p-channel power vdmosfets (irf9520) during the nbt stress-irradiation experiment [11]. 0 40 80 120 0.0 0.3 0.6 0.9 1.2 0 20 0 50 100 150 0 100 0 50 100 150 i v t i (v ) irradiation v g + 10 v 0 v 10 v t = 25 o ct = 25 o c t = 25 o c time (h) recovery1 irradiation time (min) stress time (h) nbt stress v g = 45 v time (h) recovery 2 t = 175 o c t = 175 o c annealing time (h) irradiated at -10 v previously irradiated at +10 v annealing fig. 10 behaviour of vt in p-channel power vdmosfets (irf9520) during the irradiation-nbt stress experiment [11]. 380 v. davidović, d. danković, s. golubović', et al. 0 50 100 150 0 5 10 15 20 0 40 80 120 0 100 0 50 100 150  n o t ,  n it ( 1 0 1 0 c m -2 ) stress time (h) v g = 45 v 0 20 t = 25 o c t = 25 o c t = 175 o c t = 175 o c t = 25 o c time (h) recovery1 nit not nit not nit not + 10v 0v 10v v g nbt stress irradiation irradiation time (min) time (h) recovery 2 annealing annealing time (h) fig. 11 behaviours of not and nit in p-channel power vdmosfets (irf9520) during the nbt stress-irradiation experiment [60]. 0 40 80 120 0 5 10 15 20 0 20 0 50 100 150 0 100 0 50 100 150 not nit nit not nit not v g  n o t ,  n it ( 1 0 1 0 c m -2 ) irradiation + 10 v 0 v 10 v t = 25 o c t = 25 o c t = 25 o c time (h) recovery1 irradiation time (min) stress time (h) nbt stress v g = 45 v time (h) recovery 2 t = 175 o c t = 175 o c annealing time (h) annealing fig. 12 behaviours of not and nit in p-channel power vdmosfets (irf9520) during the irradiation-nbt stress experiment [60]. the results obtained in our investigations, in power vdmosfets, signify that major contribution to nbti in these devices also originates from the oxide trapped charge. the other important feature of nbti in power vdmos devices is additional generation of interface traps in devices annealed under the positive gate bias. it is important to note that our results indicate strong bias dependence of the processes which occurred during both stress and annealing. this suggests that one or more kind of charged species could be involved. the holes induced and/or accumulated under the gate oxide have to be among them, as negative gate bias stress resulted into significant threshold voltage shift. we also believe that hydrogen, as a most common impurity in mos devices, which is widely considered as the primary agent of instabilities associated with radiation damage [55, 56], hot carrier injection, and high electric field stress [68, 69], has to be considered in bti as well. nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 381 5. underlying mechanisms during nbt stress high electric field at elevated temperature in the presence of holes (h + ) may cause dissociation of weak si-h bonds at the interface thus leading to creation of interface traps and hydrogen atoms: si3 ≡ si-h + h + ↔ si3 ≡ si + + h • . (1) released highly reactive hydrogen atoms (h • ) could react with holes from the channel and create hydrogen ions (h + ). the holes originate from the channel owing to applied high negative gate bias of 45 v. created hydrogen ions may dissociate si-h bonds at the interface, thus creating additional interface traps: si3 ≡ si-h + h + ↔ si3 ≡ si + + h2 . (2) alternatively, hydrogen ions could drift away, due to applied high negative gate bias, from the interface into the oxide bulk and participate in creation of positive oxide charge: o3 ≡ si-h + h + ↔ o3 ≡ si + + h2. (3) buildup of oxide charge under the high negative oxide field can be also explained by hole trapping at oxygen vacancy defects near the interface: o3 ≡ si • • si ≡ o3 + h + → o3 ≡ si + • si ≡ o3. (4) it should be mentioned that oxide-trapped charge and switching traps (interface traps and near interface oxide traps so-called “border traps” [70]) are all positive in the case of p-channel mos transistor and thus contribute to a negative vt. in fig. 11 (nbt-rad) it can be observed that during nbt stress the increase of not was more pronounced than nit and that these values were not affected notably by the subsequent spontaneous recovery at 25 c, as the temperature was too low to activate any process of relevance for the phenomena under the investigation. because of that the changes of vt were not affected notably by the subsequent spontaneous recovery. regarding the ionizing radiation, the knowledge acquired during many years of microelectronic devices testing [15, 71, 72] has been successfully implemented in explaining the impact of ionizing radiation on vdmosfets, and an appropriate model of responsible electrochemical process was proposed in [2]. the essence of the model is an assumption that weak bonds between silicon and oxygen atoms in the oxide structure (as well as the bonds in the defects between silicon atoms and hydrogen/hydroxyl groups and/or atomic clusters containing hydrogen) and near the oxide-silicon interface would be broken due to irradiation. namely, high energy (mev magnitude) ionizing irradiation breaks not only weak sih and si-oh bonds in the oxide, but also the regular si-o-si bonds and generates electron-hole pairs in the gate oxide structure: o3 ≡ si-o-si ≡ o3  h h o3 ≡ si . + o3 ≡ si-o . + e   h + . (5) o3 ≡ si-h (o3 ≡ si-h)  h h o3 ≡ si •  h • (oh • ) + e   h + . (6) although some of these pairs recombine, most of the generated electrons, however, quickly escape from the oxide, while most of the holes (which are weakly mobile) get captured in the oxide volume on oxygen vacancy defects o3≡si • • si≡o3, contributing to creation of positive oxide trapped charge over a reaction identical to (4). 382 v. davidović, d. danković, s. golubović', et al. when the gate is positively biased, the electrons almost immediately [35] remove through the gate, while when the gate is negatively biased, the electrons remove through the semiconductor. in the case of higher electric field applied more unrecombined holes remain trapped in the oxide which leads to higher oxide trapped charge. small difference between irradiation effects obtained for positive gate bias and negative gate bias can be explained by small difference (due to different surface potential) between the corresponding values of electric field in the oxide, which affects the removal of electrons. it should be mentioned that a fraction of the holes may dissociate weak si-h and sioh bonds and can be trapped again in the oxide contributing to oxide trapped charge increase: h + + o3≡ si-h (o3≡ si-oh) → o3≡ si + + h • (oh • ). (7) also, a fraction of the holes could be trapped at oxide defects, such as oxygen vacancies, also contributing to oxide trapped charge increase over a reaction identical to (4). as mentioned before, holes can react with hydrogen atoms forming the ions. these hydrogen ions also could contribute to the oxide trapped charge increase [56]. released holes could dissociate weak si3  si-h and si3  si-oh bonds which exist at the interface creating interface traps: from silicon h + + si3  si-h (si3  si-oh) + e   si3  si • + h • (oh • ) . (8) similarly, hydrogen ions could contribute to creation of interface traps: from silicon h + + si3  si-h (si3  si-oh) + e   si3  si • + h2 (h2o) . (9) in fig. 12 (rad-nbt) it can be seen that the values of not are significantly higher than those of nit after irradiation and that all changes were the smallest in the case of irradiation without gate bias applied. also, it can be seen that both not and nit were somewhat more pronounced in the case of a positive gate bias applied. the reason for these differences is found in the electric field dependence of irradiation effects [12, 35]. it should be emphasized that post-radiation spontaneous recovery resulted in a decrease of not and an increase of nit (fig. 12), although it seems that vt remained stable (fig. 10). in nbt stress-irradiation experiment (fig. 11), the irradiation applied after nbt stressing has produced the additional significant increase of not and nit (leading to additional negative vt presented in fig. 9) which were slightly lower, but almost the same to those previously observed in irradiated virgin devices during the first step of the irradiation-nbt strss experiment (fig. 12). this suggests that radiation effects probably were not noticeably affected by nbt stress-induced degradation. such behaviours can be explained by relatively low temperature (room temperature) and relatively low electric field applied during irradiation, as well as relatively low total irradiation dose. however, for the effects observed during the nbt stress applied after irradiation (in irradiation-nbt stress experiment) two mechanisms might be responsible. the first one is activation of electrochemical reactions contributing to nbti, which leads to additional creation of oxide charge and interface traps, and the second one is annealing of irradiationinduced oxide charge due to high temperature (175 c) applied. in order to compare the obtained values of not and nit in figs. 13 their behaviours during nbt stress of virgin (fig. 11) and previously irradiated (fig. 12) devices are presented. nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 383 in devices previously irradiated without gate bias applied, the amount of radiationinduced defects was rather small while the number of available defect precursors remained rather high. therefore, during the nbt stress applied after irradiation additional defects were created. this caused further increase of threshold voltage shift. on the other hand, in devices previously irradiated at positive or negative gate bias, the amount of irradiation-induced defects was much higher and their decreasing during the subsequent nbt stress was actually dominant over the new defect creation. decreasing of oxide trapped charge and interface traps led to the decrease of threshold voltage shift. 1 100 0 5 10 15 after irradiation at 10 v virgin after irradiation at 0 v nbt stress v g = 45v t = 175 o c  n o t (1 0 1 0 c m -2 ) stress time (h) after irradiation at + 10 v 1 100 0 5 10 15 after irradiation at 10 v virgin after irradiation at 0 v nbt stress v g = 45v t = 175 o c  n it ( 1 0 1 0 c m -2 ) stress time (h) after irradiation at + 10 v a) b) fig. 13 comparative presentation of (a) not and (b) nit during nbt stress for investigated devices (virgin and previously irradiated). also, in order to compare obtained values of vt in fig. 14 behaviours of vt during nbt stress of virgin (fig. 9) and previously irradiated (fig. 10) devices are presented [60]. it can be seen that the difference in vt established after irradiation between devices irradiated with positive and negative gate bias applied, decreased very fast at the beginning of the nbt stressing step (within about 24 hours) to a level that remained almost unchanged until the end of nbt stress. it should be noted that the second spontaneous recovery generally causes a small decrease of vt in the first period in all devices. during the rest of the spontaneous recovery vt remains almost unchanged in nbt-rad experiment (fig. 9), while slightly decreases in rad-nbt experiment (fig. 10). as in the case of the first spontaneous recovery, vt seems also to be relatively stable during the second spontaneous recovery in both experiments. despite this, it was observed decrease of not and increase of nit in both experiments (figs. 11 and 12). in figs. 7, 8, 11 and 12 it can be seen that during annealing (last step) vt, not and nit significantly decreases and that this decrease is more pronounced in devices subjected to nbt-rad experiment. although the conditions of nbt stress, irradiation and annealing have been the same in both experiments, the final values of vt, not and nit were found to depend on the order of stress steps, and were generally lower in radnbt experiment. such obtained values are the result of two high temperature steps after irradiation in rad-nbt experiment which have been applied (nbt stress and annealing, both at 175 o c for 168 h), so more defects were annealed. in nbt-rad experiment, only 384 v. davidović, d. danković, s. golubović', et al. one thermal annealing step was applied after irradiation that resulted in higher final values. namely, in nbt-rad experiment the defects induced by nbt stress and by radiation have been subjected to thermally annealing (175 o c) for 168 h, while in radnbt experiment only nbti defects have been subjected to thermally annealing (175 o c) for 168 h, but radiation defects have been subjected to high temperature (175 o c) twice as much. more pronounced and faster decrease of all values (vt, not and nit) in the initial period of annealing could be ascribed to higher values of created defects after previous steps. the obtained results undoubtedly point to the importance of the order of applied stresses. during annealing the devices were not biased, and annealing is strongly thermally supported, as observed by comparing two last steps in the experiments (spontaneous recovery and annealing). the mechanisms during annealing are thermally activated, so the diffusion of neutral species like hydrogen molecules from the areas of high concentrations in oxide toward lower concentrations near the interface could lead to decrease of not and nit. namely, hydrogen molecules could be cracked at charged oxide traps (o3 ≡ si + and o3≡ si + • si ≡ o3) leading to neutralization of positive oxide traps followed by the h + ions releasing [55] over the reverse reaction (3) and: o3 ≡ si + • si ≡ o3 + h2 → o3 ≡ si-h + h + . (10) the decrease of interface traps during the annealing might be also attributed to the hydrogen species (molecule h2 and highly reactive atom h • ) involved in reactions [20]: si3  si • + h2 → si3  si-h + h • , (11) si3  si • + h • → si3  si-h . (12) observed threshold voltage decrease is in agreement with comparable published results [73] (power mos, 105 nm gate oxide, annealed at 175 o c), and also fits to switching-oxide traps model used originally as so-called hdl model in interpreting irradiation effects and later in nbti phenomena [12, 20, 30, 55, 56]. 1 100 0.0 0.3 0.6 0.9 after irradiation at 10 v virgin devices after irradiation at 0 v nbt stress v g = 45v t = 175 o c  v t ( v ) stress time (h) after irradiation at + 10 v fig. 14 comparative presentation of vt during nbt stress of virgin devices and previously irradiated devices. nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 385 6. conclusions the main features of independent nbti and irradiation effects in pand n-channel, as well as consecutive nbti and irradiation effects in p-channel power vdmosfets have been reviewed. it was shown that experimental results of consecutive stresses complement the results of research of independent nbti and irradiation effects. the obtained results were analysed in terms of underlying mechanisms. this investigation is shown as important in assessing the device behaviour in real working conditions (where devices are simultaneously under negative bias, irradiation and selfheating). it was shown that radiation induced degradation of previously nbt stressed devices practically was not affected by previous nbt stress. however, previously irradiated devices with and without gate bias applied have shown different behaviours. devices previously irradiated without gate bias have been further degraded by nbt stress, while devices previously irradiated with gate bias have been partially recovered by nbt stress, due to high temperature introduced by nbt stress. the obtained results undoubtedly point to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of their possible applications have to be considered. acknowledgement this research was supported by the ministry of education, science and technological development of the republic of serbia under the grants no. oi171026 and tr32026. also, the research was supported by serbian academy of sciences and arts (sasa) under the grant no. f-148. the authors would like to thank the staff of department of radiation and environmental protection at the institute for nuclear sciences, vinča, serbia, for providing the facilities for radiation experiments. references [1] n. stojadinović, s. djorić, s. golubović, v. davidović, "separation of the radiation induced gate oxide charge and interface traps effects in power vdmosfets", electron. lett., vol. 30, pp. 1992-1993, 1994. [2] n. stojadinović, s. golubović, s. djorić, s. dimitrijev, "analysis of gamma-irradiation induced degradation mechanisms in power vdmosfets", microelectron. reliab., vol. 35, pp. 587-602, 1995. [3] a. jakšić, m. m. pejović, g. ristić, s. raković, "latent interface-trap generation in commercial power vdmosfets", ieee trans. nucl. sci., vol. 45, pp. 1365-1372, 1998. [4] c. pickard, c. brisset, o. qittard, m. marceau, a. hoffman, f. joffre, j-p. charles, "use of commercial vdmosfets in electronic systems subjected to radiation", ieee trans. nucl. sci., vol. 47, pp. 627-633, 2000. [5] u. schwalke, m. polzl, t. sekinger, m. kerber, "ultra-thick gate oxides: charge generation and its impact on reliability", microelectron. reliab., vol. 41, pp. 1007-1010, 2001. [6] n. stojadinović, i. manić, s. djorić-veljković, v. davidović, s. golubović, s. dimitrijev, "mechanisms of positive gate bias stress induced instabilities in power vdmosfets", microelectron. reliab., vol. 41, pp. 1373-1378, 2001. [7] m.s. park, i. na, c.r. wie, "a comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors", j. appl. phys., vol. 97, pp. 014503-1-6, 2005. [8] g. bo, y. xuefeng, r. diyuan, l. gang, w. yiyuan, s. jing, c. jiangwei, "total ionizing dose effects and annealing behavior for domestic vdmos devices", j. semicond., vol. 31, pp. 044007-1-5, 2010. [9] n. stojadinović, d. danković, i. manić, a. prijić, v. davidović, s. djorić-veljković, s. golubović, z. prijić, "threshold voltage instabilities in p-channel power vdmosfets under pulsed nbt stress", microelectron. reliab., vol. 50, pp. 1278-1282, 2010. 386 v. davidović, d. danković, s. golubović', et al. [10] d. danković, i. manić, a. prijić, s. djorić-veljković, v. davidović, n. stojadinović, z. prijić, s. golubović, "negative bias temperature instability in p-channel power vdmosfets: recoverable versus permanent degradation", semicond. sci. technol., vol. 30, pp. 105009-1-105009-9, 2015. [11] v. davidović, d. danković, a. ilić, i. manić, s. golubović, s. djorić-veljković, z. prijić, n. stojadinović, "nbti and irradiation effects in p-channel power vdmos transistors", ieee trans. nucl. sci., vol. 63, pp. 1268-1275, 2016. [12] d.m. fleetwood, p.s. winokur, p.e. dodd, "an overview of radiation effects on electronics in the space telecommunication environment", microelectron. reliab., vol. 40, pp. 17-26, 2000. [13] k.r. davis, r.d. schrimpf, f.e. cellier, k.f. galloway, d.i burton, jr. c.f.wheatley, "the effects of ionizing radiation on power-mosfet termination structures", ieee trans. nucl. sci., vol. ns-36, pp. 2104-2109, 1989. [14] d. župac, k.f. galoway, r.d. schrimpf, p. augier, "effects of radiation-induced oxide-trapped charge on inversion-layer hole mobility at 300 and 77 k", appl. phys. lett., vol. 60, pp. 3156-3158, 1992. [15] t.p. ma, p.v. dressendorfer, ionizing radiation effects in mos devices and circuits, john wiley & sons, new york, 1989. [16] n. stojadinović, d. danković, s. djorić-veljković, v. davidović, i. manić, s. golubović, "negative bias temperature instability mechanisms in p-channel power vdmosfets", microelectron. reliab., vol. 45, pp. 1343-1348, 2005. [17] d.k. schroder, j.a. babcock, "negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing", j. appl. phys., vol. 94, pp. 1-18, 2003. [18] v. huard, m. denais, c. parthasarathy, "nbti degradation: from physical mechanisms to modelling", microelectron. reliab., vol. 46, pp. 1-23, 2006. [19] j.h. stathis, s. zafar, "the negative bias temperature instability in mos devices: a review", microelectron. reliab., vol. 46, pp. 270-286, 2006. [20] t. grasser, b. kaczer, w. gös, h. reisinger, t. aichinger, p. hehenberger, p.-j. wagner, f. schanovsky, j. franco, ph.j. roussel, m. nelhiebel, "recent advances in understanding the bias temperature instability", ieee proc. iedm, 2010, pp. 82-85. [21] n. tošić, b. pešić, n. stojadinović, "high-temperature-reverse-bias testing of power vdmos transistors", microelectron. reliab., vol. 37, pp. 1759-1762, 1997. [22] s. djorić-veljković, i. manić, v. davidović, s. golubović, n. stojadinović, "effects of burn-in stressing on post-irradiation annealing response of power vdmosfets", microelectron. reliab., vol. 43, pp. 1455-1460, 2003. [23] n. stojadinović, i. manić, d. danković, s. djorić-veljković, v. davidović, a. prijić, s. golubović z. prijić, "negative bias temperature instability in thick gate oxides for power mos transistors", pp. 533559, in bias temperature instability for devices and circuits, tibor grasser, editor, springer science publisher, 2014. [24] s. gamerith, m. polzl, "negative bias temperature stress in low voltage p-channel dmos transistors and role of nitrogen", microelectron. reliab., vol. 42, pp. 1439-1443, 2002. [25] n. stojadinović, i. manić, v. davidović, d. danković, s. djorić-veljković, s. golubović, s. dimitrijev, "effects of electrical stressing in power vdmosfets", microelectron. reliab., vol. 45, pp. 115-122, 2005. [26] d. danković, i. manić, v. davidović, s. djorić-veljković, s. golubović, n. stojadinović, "negative bias temperature instability in n-channel power vdmosfets", microelectron. reliab., vol. 48, pp. 13131317, 2008. [27] i. manić, d. danković, a. prijić, v. davidović, s. djorić-veljković, s. golubović, z. prijić, n. stojadinović, "nbti related degradation and lifetime estimation in p-channel power vdmosfets under the static and pulsed nbt stress conditions", microelectron. reliab., vol. 51, pp. 1540-1543, 2011. [28] a.n. tallarico, p. magnone, g. barletta, a. magri, e. sangiorgi, c. fiegna, "negative bias temperature stress reliability in trench-gated p-channel power mosfets", ieee trans. dev. mater. reliab., vol. 14, pp. 657-663, 2014. [29] s. aresu, w.kanert, r. pufall, m. goroll, "exceptional operative gate voltage induced negative bias temperature instability (nbti) on n-type trench dmos transistors", microelectron. reliab., vol. 47, pp. 1416-1418, 2007. [30] t. grasser, t. aichinger, g. pobegen, h. reisinger, p.j. wagner, j. franco, m. nelhiebel, b. kaczer, "the 'permanent' component of nbti: composition and annealing", in proc. ieee international reliab. phys. symp. 2011, pp. 6a.2.1-6a.2.9. nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets 387 [31] j.r. schwank, f.w. sexton, d.m. fleetwood, r.v. jones, r.s. flores, m.s. rodgers, k.l. hughes, "temperature effects on the radiation response of mos devices", ieee trans. nucl. sci., vol. 35, pp. 1432-1437, 1988. [32] m.r. shaneyfelt, j.r. schwank, d.m. fleetwood, p.s. winokur, "effects of irradiation temperature on mos radiation response", ieee trans. nucl. sci., 45 (1998) 1372-1378. [33] k.f. galloway, r.d. schrimpf, "mos device degradation due to total dose ionizing radiation in the natural space environment: a review", microelectron. j., vol. 21, pp. 67-81, 1990. [34] t. sakai, t. yachi, "effects of gamma-ray irradiation on thin-gate-oxide vdmosfet characteristics", ieee trans. electron dev., vol. 38, pp. 1510-1515, 1991. [35] t.r. oldham, f.b. mclean, "total ionizing dose effects in mos oxides and devices", ieee trans. nucl. sci., vol. 50, pp. 483-499, 2003. [36] g. ristić, m. pejović, a. jakšić, "comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power vdmosfet", appl. surf. sci., vol. 220, pp. 181-185, 2003. [37] s. djorić-veljković, i. manić, v. davidović, d. danković, s. golubović, n. stojadinović, "comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power vdmosfets", nucl. technol. radiat. protec., vol. 28, pp. 406-414, 2013. [38] discrete and special technology group, tmos power mosfet, selector guide, cross reference and reliability data, motorola inc. 1985. [39] n. stojadinović, i. manić, s. djorić-veljković, v. davidović, s. golubović, s. dimitrijev, "effects of high electric field and elevated-temperature bias stressing on radiation response in power vdmosfets", microelectron. reliab., vol. 42, pp. 669-677, 2002. [40] n. stojadinović, s. djorić-veljković, i. manić, v. davidović, s. golubović, "effects of burn-in stressing on radiation response of power vdmosfets", microelectron. j., vol. 33, pp. 899-905, 2002. [41] m.r. shaneyfelt, p.s. winokur, d.m. fleetwood, j.r. schwank, r.a.jr. reber, "effects of reliability screens on mos charge trapping", ieee trans. nucl. sci., vol. 43, pp. 865-872, 1996. [42] d. danković, i. manić, s. djorić-veljković, v. davidović, s. golubović, n. stojadinović, "nbt stressinduced degradation and lifetime estimation in p-channel power vdmosfets", microelectron. reliab., vol. 46, pp. 1828-1833, 2006. [43] d. danković, i. manić, s. djorić-veljković, v. davidović, s. golubović, n. stojadinović, "implications of negative biastemperature instability in power mos transistors", 19.319 19.342, in micro electronic and mechanical systems, edited by kenichi takahata, in-tech press, boca raton, 2009. [44] d. danković, i. manić, v. davidović, a. prijić, s. djorić-veljković, s. golubović, z. prijić, n. stojadinović, "lifetime estimation in nbt-stressed p-channel power vdmosfets", facta univers.: ser. automat. cont. rob., vol. 11, pp. 15-23, 2012. [45] d. danković, i. manić, v. davidović, s. djorić-veljković, s. golubović, n. stojadinović, "negative bias temperature instabilities in sequentially stressed and annealed p-channel power vdmosfets", microelectron. reliab., vol. 47, pp. 1400-1405, 2007. [46] i. manić, d. danković, s. djorić-veljković, v. davidović, s. golubović, n. stojadinović, "effects of low gate bias annealing in nbt stressed p-channel power vdmosfets", microelectron. reliab., vol. 49, pp. 1003-1007, 2009. [47] a. prijić, d. danković, lj. vračar, i. manić, z. prijić, n. stojadinović, "a method for negative bias temperature instability (nbti) measurements on power vdmos transistors", meas. sci. technol., vol. 23, pp. 085003-1-8, 2012. [48] d. danković, i. manić, a. prijić, v. davidović, s. djorić-veljković, s. golubović, z. prijić, n. stojadinović, "effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power vdmosfets", inform. midem., vol. 43, pp. 58-66, 2013. [49] i. manić, d. danković, a. prijić, z. prijić, n. stojadinović, "measurement of nbti degradation in pchannel power vdmosfets", inform. midem., vol. 44, pp. 280-287, 2014. [50] d. danković, n. stojadinović, z. prijić, i. manić, v. davidović, a. prijić, s. djorić-veljković, s. golubović, "analysis of recoverable and permanent components of threshold voltage shift in nbt stressed p-channel power vdmosfet", chinese phys. b, vol. 24, pp. 106601-1-9, 2015. [51] i. manić, d. danković, v. davidović, a. prijić, s. djorić-veljković, s. golubović, z. prijić, n. stojadinović, "effects of pulsed negative bias temperature stressing in p-channel power vdmosfets", facta univers.: ser. electron. energ., vol. 29, pp. 49-60, 2016. [52] d. danković, i. manić, v. davidović, a. prijić, m. marjanovic, a. ilic, z. prijić, n. stojadinović, "on the recoverable and permanent components of nbti in p-channel power vdmosfets", ieee trans. on device mater. reliab., vol. 16, art. no. 7536114, pp. 522-531, 2016. 388 v. davidović, d. danković, s. golubović', et al. [53] s. ogawa, m. shimaya, n. shiono, "interface-trap generation at ultrathin sio2 (4-6 nm)-si interfaces during negative-bias temperature aging", j. appl. phys., vol. 77, pp. 1137-1148 1995. [54] a. demesmaeker, a. pergoot, p. de pauw, "bias temperature reliability of p-channel high-voltage devices", microelectron. reliab., vol. 37, pp. 1767-1770, 1997. [55] r.e. stahlbush, a.h. edwards, d.l. griscom, b.j. mrstik, "post-irradiation cracking of h2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors", j. appl. phys., vol. 73, pp. 658-667, 1993. [56] d.m. fleetwood, "effects of hydrogen transport and reactions on microelectronics radiation response and reliability", microelectron. reliab., vol. 42, pp. 523-541, 2002. [57] v. davidović, n. stojadinović, d. danković, s. golubović, i. manić, s. djorić-veljković, s. dimitrijev, "turn around of threshold voltage in gate bias stressed p-channel power vertical double-diffused metaloxide-semiconductor transistors", jap. j. app. phys., vol. 47, pp. 6272-6276, 2008. [58] k.e. kambour, d.d. nguyen, c. kouhestani, r.a.b. devine, "comparison of nbti and irradiation induced interface states", ieee international integrated reliability workshop, 2013, pp. 157-160. [59] p.j. mcwhorter, p.s. winokur, "simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors", app. phys. lett., vol. 48, pp. 133135, 1986. [60] v. davidović, d. danković, a. ilić, i. manić, s. golubović, s. djorić-veljković, z. prijić, a. prijić and n. stojadinović, "effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors", jap. j. app. phys., vol. 57, no. 4, art. no 044101, pp. 044101-1-10, 2018. [61] k.o. jeppson, c.m. svensson, "negative bias stress of mos devices at high electric fields and degradation of mnos devices", j. appl. phys., vol. 48, pp. 2004-2014, 1977. [62] s. zafar, "statistical mechanics based model for negative bias temperature instability induced degradation", j. appl. phys., vol. 97, pp. 103709-1-103709-9, 2005. [63] a.e. islam, k. kufluoglu, d. varghese, s. mahapatra, m.a. alam, "recent issues in negative-bias temperature instability: initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation", ieee trans. electron. dev., vol. 54, pp. 2143-2154, 2007. [64] t. grasser, w. goes, b. kaezer, "dispersive transport and negative bias temperature instability: boundary conditions, initial conditions, and transport models", ieee trans. on device and mater. reliab., vol. 8, pp. 79-97, 2008. [65] t. grasser, bias temperature instability for devices and circuits, springer, new york, 2014. [66] v. huard, "two independent components modeling for negative bias temperature instability", intl. reliab. phys. symp. anheim, ca, 2010, pp. 33-42. [67] d.s. ang, z.q. teo, t.j.j. ho, c.m. ng, "reassessing the mechanisms of negative-bias temperature instability by repetitive stress/relaxation experiments", ieee trans. device mater. reliab., vol. 11, pp. 19-34, 2011. [68] e. cartier, "characterization of the hot-electron-induced degradation in thin sio2 gate oxides", microelectron. reliab., vol. 38, pp. 201-211, 1998. [69] d.j. dimaria, j.h. stathis, "anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films", j. app. phys., vol. 89, pp. 5015-5024, 2001. [70] d.m. fleetwood,"’border traps’ in mos devices", ieee trans. nucl. sci., vol. 39, pp. 269-271, 1992. [71] s. dimitrijev, s. golubović, d. župac, m. pejović, n. stojadinović, "analysis of gamma-radiation induced instability mechanisms of cmos transistors", solid-state electron., vol. 32, pp. 349-353, 1989. [72] s. djorić-veljković, i. manić, v. davidović, d. danković, s. golubović, n. stojadinović, "annealing of radiation-induced defects in burn-in stressed power vdmosfets", nucl. technol. radiat. protec., vol. 26, pp. 18-24, 2011. [73] s. mahapatra, n. goel, s. desai, s. gupta, b. jose, s. mukhopadhyay, k. joshi, a. jain, a.e. islam, m.a. alam, "a comparative study of different physics-based nbti models", ieee trans. electron dev., vol. 60, pp. 901-916, 2013. 13576 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 123 136 https://doi.org/10.2298/fuee2601123a © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential applications elson avallone1,2, paulo cesar mioralli2, paulo henrique palota2, pablo sampaio gomes natividade2, sílvio aparecido verdério junior3 1federal institute of science and technology of são paulo, bauru-sp, brazil 2federal institute of science and technology of são paulo, catanduva-sp, brazil 3federal institute of science and technology of são paulo, araraquara-sp, brazil orcid ids: elson avallone https://orcid.org/0000-0001-9650-9239 paulo césar mioralli https://orcid.org/0000-0001-8611-4356 paulo henrique palota https://orcid.org/0000-0003-4459-7438 pablo sampaio gomes natividade https://orcid.org/0000-0001-6328-7457 sílvio aparecido verdério junior https://orcid.org/0000-0001-9695-7197 abstract. one square meter of solar surface produces approximately 63x106 w/m² of energy and even with all the natural atmospheric filters, this energy is still very little explored, especially in thermal systems. countries with an abundance of solar radiation still do not properly exploit this natural resource and when we look at poorer countries, this situation is even more worrying. the use of solar collectors for water heating represents significant economic and technological development throughout the world. in this work the pvc-b (polyvinyl chloride-blue) lining honeycomb plate was converted into a solar collector, and its thermal efficiency was then analyzed. the coldwater inlet, hot water outlet and ambient temperatures, as well as the water flow and direct and reflected solar radiation from the ground are measured and these records are used to determine the energy absorbed by the water and incident on the solar collector. the average and maximum thermal efficiency of the pvc-b collector was 38.35% and 68%, respectively, with a maximum temperature of 42.94 °c. the collector in this study can be used both as a stand-alone system and as a hybrid system to support electric showers. the behavior of the solar collector studied here is analogous to a swimming pool collector, but with a cost of 73.18% lower. even with a not so attractive average efficiency (38.35%), the low cost and simple construction make this equipment a great attraction for residential installation, as it can be built by the user received march 26, 2025; revised may 28, 2025 and july 01, 2025; accepted july 15, 2025 corresponding author: elson avallone federal institute of science and technology of são paulo, bauru-sp, brazil and federal institute of science and technology of são paulo, campus catanduva-sp, brazil, and campus bauru-sp, rua severino lins, 7-10 vila aviação – bauru-sp brazil e-mail: elson.avallone@ifsp.edu.br *an earlier version of this paper was presented at the 9th virtual international conference on science, technology and management in energy (energetics-2023), november 23-24, 2023, in nis, serbia [1]. 124 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior himself and used to heat water for low-income families, which is a promising result for a low-investment equipment, compared to commercial solar collectors (fpc). key words: solar collector, prototype, pvc-b, honeycomb, thermal efficiency nomenclature symbol description unit a front and rear collector area [m²] cp specific heat of water at constant pressure [j/kg.k] gdir direct solar heat flow [w/m²] grefl solar reflected heat flow [w/m²] m mass flow [kg/s] th hot water temperature [°c] tc cold water temperature [°c] t∞ ambient temperature [°c] aq absorbed heat rate by the collector [w] iq incident heat rate by the collector [w] uq incident heat rate on the upper surface of the collector [w] lq incident heat rate on the lower surface of the collector [w] fr(τα) heat removal factor [dimensionless] α solar collector inclination [°] η thermal efficiency of the solar collector [dimensionless] 1. introduction brazil leads the renewable energy market in latin america in solar water heating and has great potential for growth in this technology due to its simplicity and high economic viability. despite the leadership in the thermal production sector for water heating and the abundance of sunlight in brazil, many families still use electrical equipment to heat water for bathing, thus increasing energy consumption, generating an increase in electricity bills and drastically overloading the industrial electrical system, especially during peak consumption times. when we analyze this scenario for low-income families, the situation is even more critical, as they have neither knowledge of alternatives for reducing electricity costs nor financial resources to purchase industrialized equipment, since 22.8% of the household budget is consumed only with said electricity [2]. brazilian law mpv 1162/2023 deals with the installation of photovoltaic panels, however, the aforementioned law does not cover thermal systems, thus losing the capacity for exploration in the sector and reducing the financial situation of the population due to the lack of incentives in thermal systems. among the renewable energy sources used until the end of 2015, investments were distributed between 2.3% in nuclear energy and 19.3% in all other renewable energies, demonstrating great solar, wind and geothermal energy potential [3]. at the end of 2009, thermal energy storage capacity was approximately 600 mw and at the end of 2013 a total of 3.6 gw [4]. in 2016, production capacity increased to 456 gw, distributed across 652 million m² of installed collectors [5]. in the study of [6], the main use of solar energy is restricted evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential ... 125 to domestic water heating using solar collectors, as it has a low environmental impact and a significant reduction in the use of conventional energy sources. reducing family electricity demand leads to social improvement, environmental preservation, the possibility of creating jobs and financial savings, in addition to a significant reduction in greenhouse gas emissions. a case study revealed that the cost-benefit of using photovoltaic energy technology for heating water in a single-family home through a survey of the number of people living in the building, as well as the respective per capita water consumption, resulted in the use of this type of energy being economically viable, as the results demonstrated a significant reduction in the cost of energy consumed in the home [7] the international conference rio +20 [8] reports on the construction of sustainable cities, including the rational use of energy, with effective control by public authorities. the residential sector has an average consumption of 24% of the total electricity consumed [5]. the use of a hybrid system consisting of solar collectors linked to electric showers allows a 10% reduction in electricity costs [9]. general electric published a report stating that the use of renewable energy can quickly change the trajectory of climate change. the generation and distribution of renewable energy must provide an economically viable, renewable and reliable energy matrix and the most effective way is diversification [10]. as brazil's energy matrix is mostly hydroelectric, the use of solar energy for residential water heating corresponds to savings of 70% in electricity consumption [11] and the application of new technologies makes it possible to reduce fossil fuels for generation and electrical energy distribution [12]. the flat plate collector (fpc) is used in moderate heating situations, taking advantage of solar radiation, with little maintenance, widely applied in water heating in buildings and various industrial processes. [13] conducted tensile testing versus deformation, analyses by infrared spectrometry, and degradation kinetics by thermogravimetry on samples taken from the naturally aged plates of a polyvinyl chloridebased compound used in the absorber plates of low-cost solar collectors after 5 years of use and found that they functioned normally, without leaks and heating water up to 50°c. the authors [14] studied the effect of thermal conductivity and collector area for pvc-b (pvc-b: polyvinyl chloride-blue), pb (pb: polybutene), pp-r (pp-r: polypropylene random copolymer) and pvc-cb: (polyvinyl chloride-carbon black) and found that the differing thermal conductivity materials have indicated that there is no difference of the materials on collector thermal efficiency, but only due areas of the panel. the goal of this study is to build a pvc-b square honeycomb solar collector and measure its thermal efficiency. the work describes in section 2 the methods and procedures used in the research, including data collection and analysis. section 3 presents the data obtained in the research, accompanied by figures. it interprets the results, relating them to the existing literature and highlighting the contributions of the study. section 4 summarizes the main findings and their implications. 2. methodology the solar collector studied was built with a pvc-b (polyvinyl chloride-blue) square honeycomb plate, whose internal channels provide water circulation, with better heat distribution (fig. 1(a)). pvc-b tubes with slots are fixed to the ends of the linen with high-resistance pvc-b glue and epoxy resin, as shown in fig. 1(b). 126 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior fig. 1(a) pvc-b square honeycomb fig. 2(b) installation of pvc-b pipes with slots at the ends of the plates [11] the solar collector was coated with high absorptivity matte black paint, used to manufacture commercial solar collectors. the complete assembly is shown in fig. 3. fig. 3 complete assembly the angle α in fig. 4 is determined according to technical standard abnt-nbr 15569 [15], [16] and [17] with an inclination of the local latitude of 21°8′16″ south plus 10°. the addition of 10° of inclination in the local latitude compensates for the annual translational movement of the earth in the transition from winter to summer and vice versa. water is pumped between the pvc-b collector and the reservoir, (fig. 4), maintaining a constant flow. evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential ... 127 fig. 4 schematic diagram of the test bench the electric pump flow adjustment is carried out through the manual valve and monitored by the arduino serial monitor [18]. the temperatures of hot water (th) and cold water (tc) are measured with ds18b20 encapsulated sensors [19] and installed in the pvc-b connections at the hot water outlet and cold water inlet, respectively. the ambient temperature is measured with the same sensor (ds18b20) installed in a tube open at both ends, thermally isolated and with forced ventilation. the calibration of these sensors is defined by the suppliers. the radiation incident from the sun and reflected from the ground are measured using thermal radiometers constructed according to [20], [21], [22], [23] and [24], installed with the same inclination as the angle α. although these radiometers are of simple construction, they have excellent agreement with industrialized equipment, a fact proven by publications [20], [21], [22], [23] and [24]. the calibration and validation process was also presented by [21] pp.19 and are the same as those developed by [20], [21], [22], [23] and [24]. in summary, the calibrations of the radiometers were conducted at ipmet [25] in the city of bauru, where the sensor to be calibrated was installed next to the reference sensor. the data collected by the sensors were plotted, generating a point cloud in which the "x" axis represents the sensor to be calibrated and the "y" axis the reference sensor. using the point cloud, a trend line was drawn that generated a calibration equation. the sensor to be calibrated works by the thermal principle that measures the temperature difference over a blackened aluminum disk and the ambient temperature. the temperature difference between the blackened disk and the ambient temperature is inserted into the calibration equation, thus converting it into solar radiation in w/m2. to measure the volumetric flow, a yf-s401 sensor [26] was used, calibrated on a test bench, and the results were converted into mass flow. this calibration can be seen at phd thesis of author [27]. the circuit flow was set at 0.017 kg/s by the valve in fig. 4 and visualized by the arduino serial monitor. 128 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior the electronic circuit diagram developed for this work is shown in fig. 5. a similar assembly was developed by [28]. fig. 5 schematic diagram of the dataloger/arduino the shield with the arduino, rtc module, sd module and terminals is shown in fig. 6. fig. 6 shield with arduino, rtc module, sd module and terminals 2.1. mathematical formulation to evaluate the heat flow absorbed by the solar collector, the summarized first law of thermodynamics was used [15], [29], [30], presented in equation 1. . .( )a h cq mcp t t= − (1) the a q in the equation (1) is the heat flow absorbed by water [w], m the mass flow rate of water [kg/s] using specific mass of water ρ = 1000 kg/m3, cp the specific heat of water at constant pressure with a value fixed at 4186 j/kg.k, th the temperature at the hot water outlet [ºc] and tc the temperature at the cold water inlet [ºc]. temperatures, as well as all other physical properties, are measured through the data acquisition system shown in fig. 5. we consider the variation in the specific heat of water to be negligible, since its variation with the largest temperature difference of approximately 7.63 °c at 14:05 hours, during the test, generated a very small variation in heat capacity in the order of 0.024%, equivalent to 1.0 j/kg.k. evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential ... 129 the total solar flux incident on the collector iq is determined by adding the heat flux on the upper surface u dirq g a=  and the heat flux on the lower surface l reflq g a=  presented in equation 2. i u lq q q= + (2) where the direct (gdir) and reflected (gref) radiation are measured using the radiometer developed by [28], where the calibration is presented, and a is the upper and lower area (a = 0.7381 m2) of the collector with dimensions 0.613 x 1.204 m. the pvc-b solar collector does not have the glass cover and protective box, found in commercial collectors, solar intensity is measured both by direct incidence and reflected by the ground, that is, the total available heat flux is determined by the already defined equation 2. direct and reflected solar radiation are also measured through the data acquisition system shown in fig. 5. to determine the thermal efficiency of the pvc-b collector, equation 3 is used. 100a i q q  =  (3) which η is the thermal efficiency of the collector in percentage. the heat removal factor of the solar collector measures the amount of heat removed by the collector to the water. the books by dr. soteris kalorigou [15] (pp. 173) and duffie & beckman [29] (pp. 263) present the equations to determine this factor. this equation was also extensively used in the ph.d. thesis of [27]. equation 4 presents the graphical relationship to determine the heat removal factor of the solar collector, with the thermal efficiency (η) being a function of the variation in cold and ambient temperatures and the radiation incident on the collector on both the upper and lower surfaces, as shown in equation 4. ( ) c dir ref t t f g g    − =    +  (4) the removal factor called fr(τα) is the intersection point of the average line of the experimental points with the “y” axis and represents the initial efficiency of the solar collector, presented by [15] (pp.223). 3. results and discussion fig. 7 shows the temperature profiles of cold-water inlet, hot water outlet and ambient temperature. the cold, hot and ambient temperatures measured in forced circulation are, respectively, the cold-water inlet, lower region of the collector, hot water outlet, upper region and ambient temperature. fig. 7 shows the transient variations of the cold inlet and hot outlet temperatures. the ambient temperature influences the collector efficiency, since equation 4 presents the efficiency as a function of the variation of the cold water and ambient temperatures divided by the incident solar radiation. the oscillations in fig. 7 and fig. 9 refer to the passage of clouds in the experiment region. 130 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior fig. 7 solar collector temperature profiles the two radiometers, installed with inclination angle α, shown in fig. 8 measure direct solar radiation and that reflected from the ground, respectively. fig. 8 radiometers for incident and reflected radiation the incident and reflected transient radiations are shown in fig. 9, where the oscillations indicate clouds. evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential ... 131 fig. 9 solar radiation measured with the two radiometers the incident and absorbed energy are shown on fig. 10. the interesting about this graph is the interval between energies, representing the losses in the solar collector, with an average of 298.33 w, relatively small losses for such a simple and inexpensive system. fig. 10 energy incident and absorbed by the solar collector the difference between the incident energy and the absorbed energy represents the losses in the collector, which can be better seen on fig. 11, highlighted in yellow. 132 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior fig. 11 energy losses in the solar collector for a solar energy analysis, the sums of accumulated incident and absorbed energy in the collector are presented in the graph on fig. 12, with maximum values of 17.58 mj and 6.64 mj, respectively. the yellow region also represents the energy losses of the solar collector studied. fig. 12 accumulated energy incident and absorbed in the solar collector the transient efficiency of the solar collector is shown in fig. 13. the sudden drop at 15:00 refers to the passage of many clouds over the experiment site, also visualized in the radiation graph in fig. 9. evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential ... 133 fig. 13 transient efficiency of the pvc-b solar collector fig. 13 also shows the average value of 38.35% in pvc-b collector efficiency. in this paragraph the authors highlight the influence of clouds on the experiment. when clouds pass over the collector, there is a reduction in the temperatures shown on fig. 7, which leads to a variation in the incident and energies absorbed by the collector, as shown on fig. 10. in fig. 13, a transient variation in the collector efficiency can be observed. fig. 11 shows the incident, absorbed and lost transient energies. another way to analyze this is through fig. 12, which shows the accumulated, incident, absorbed and lost energy in the solar collector studied. fig. 14 presents a comparative graph between the studied collector, where the black points represent the experimental points, the red line is the trend line of the said points, and the intersection with the vertical axis is the initial efficiency, with an approximate value of 0.68, that is, 68%. the green and blue lines represent the pool solar collector and the solar collector with glass cover, respectively, according to the data published by kalogirou [15] (pp. 243). a comparative evaluation between the lines shows that the studied collector has a behavior analogous to the pool solar collector. the angular coefficient of the red medium line is equivalent to the losses of the equipment to the environment, which creates a significant slope compared to other types of solar collectors. taking as a reference a loss of -40.19 of the studied pvc-b collector (red line), when compared with commercial collector with a glass cover of -8.0822 described by kalogirou [15] (pp. 243, blue line in fig. 14), it is observed that there is a loss 79.9% greater for the studied collector. this indicates that the thermal reservoir and the glass cover provide a significant increase not only in efficiency but also in reducing heat losses to the environment. similarly, comparing the losses of 40.19 from the studied collector with the losses of -20.581 from the swimming pool collector described by kalogirou (green line in fig. 14), it can be seen a loss of 48.12% greater than that of the swimming pool collector, as the pool collector is made from a material similar to pvc. the graph of the studied solar collector, presented in fig. 14, has a behavior analogous to a swimming pool collector, as both types of collectors presented touch the axes of the abscissas and ordinates. 134 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior fig. 14 efficiency x the absence of these protective features reduces the collector's efficiency, but also drastically reduces the equipment's production costs. an installation as a proposal to reduce the costs of the studied system for the user can be seen in fig. 15. fig. 15 the installation of solar heating system using a commercial electric shower cold water enters the solar collector through the lower region. the solar collector heats the water, generating an upward movement, raising it to the water tank, which functions as a thermal storage device. the hot water in the water tank remains in the upper region due to the difference in density and is collected in this same region for the electric shower, where the temperature of the shower must be regulated by an electric control, as used in commercial electric showers. the electric control is activated only on days with lower temperatures for a pleasant shower, which only on these days will there be electricity costs. in high summer temperatures, the hot water coming from the water tank can generate an uncomfortable shower, with excessive temperature, which requires a cold-water system to regulate the water temperature for a comfortable shower. evaluation of thermal efficiency of a pvc-b square honeycomb solar collector for residential ... 135 4. conclusion the build pvc-b solar collector has an average efficiency of 38.35% and initial efficiency of 68% with a maximum temperature of 42.94 °c. as the solar collector does not have a glass cover or a thermal reservoir, there is a large loss of heat to the environment, which justifies the large angular coefficient of -40.19 of the red curve in the graph in figure 14, that is, there is no degradation of the material during the thermal process, but only heat loss to the environment. commercial flat plate solar collector (fpc), which are built with copper or aluminum piping with fins for greater absorption of solar heat flow installed in a metal box with a glass cover, have an average efficiency of 60% [15] and [31]. the efficiency of the pvc-b collector has an interesting result, as it is a cheap project. the application of this solar heater collector makes it possible to use it for low-income families and even with a not-so-high efficiency, it can be used as a hybrid system, to support electric showers with a dimer to control the electric resistance as could be seen in fig. 15, which could reduce electric power bill. another important factor is that the solar collector is a do-it-if yourself with easy-to-find materials and simple assembly, eliminating the use of metal welding. the system proposed for this work uses a single water tank, for both hot and cold water, using stratified thermal separation. as a result, low-income families will not have to spend with another reservoir for storing hot water. the solar collector studied here has a behavior like a swimming pool solar collector. comparing the built area and cost, the commercial collector has an area of 0.66 m2 with a cost of us$ 151.52/m2, while the collector studied has an area of 0.7381 m2 with an estimated cost of us$ 40.64/m2, i.e. represents 73.18% cheaper when compared to the commercial collector. it is important to consider that the collector studied requires maintenance, painting, every 3 years. painting is an important factor in the durability of the solar collector studied, since in its absence, the pvc-b solar collector is exposed to ultraviolet rays, which would cause its degradation. this will generate the need to repaint it periodically. another attraction for this equipment is the average losses of 287.66 w from 7:00 to 17:30. as it is a device without a glass cover and without a protective box, it can be considered that these are very small losses. the pvc-b solar collector works best in regions close to the equator due to greater solar incidence. even with relatively higher temperatures than in the northern hemisphere, there are still low temperatures, such as below the tropic of capricorn, however, the solar collector studied will function adequately at any latitude. furthermore, the poorest regions in the world are located close to the equator and these devices can reduce electricity bills. a government awareness plan for low-income families would be a good global practice to increase the use of solar collectors for water heating. acknowledgement: to the federal institute of education, science and technology of são paulo, campus catanduva-sp and campus bauru-sp for the constant support and encouragement. references [1] k. o. m. bueno, p. c. mioralli, p. h. palota, p. s. g. natividade and s. a. verdério júnior, "thermal efficiency of a pvc honeycomb solar collector", in proceedings of the 9th virtual international conference on science, technology and management in energy, vol. 1, complex system research centre, niš, serbia, 2023, p. 117-122. [2] o. a. teixeira, o. vital brazil and p. m. araújo, "the access of low icome population to the thermal solar energy by energy efficiency projects", abens associação brasileira de energia solar fortaleza brazil, vol. 1, pp. 1-7, 2007. 136 e. avallone, p.c. mioralli, p.h. palota, p.s.g. natividade, s. a. verdério junior [3] a. zervos and c. lins, "ren 21: global status report 2017". ren 21 renewable energy policy network for the 21st century, 2017. [4] m. van der hoeven, "iea international energy agency". iea, 2014. [5] ê. b. pereira et al., "atlas brasileiro de energia solar", inpe instituto nacional de pesquisas espaciais, 2017. [6] b. metz, o. davidson, p. bosch, d. rutu and l. meyer, climate change 2007: mitigation. contribution of working group iii to the fourth assessment report of the intergovernmental panel on climate change, 1a. canada: cambridge university press, 2007. [7] l. d. s. maia, w. p. miranda, and é. c. n. m. pinheiro, "sizing of a water heating system in a single-family residence through solar energy capture: case study", ijaers, vol. 8, no. 6, p. 134-144, 2021. [8] united nations, "a rio+20 e a construção de cidades sustentáveis a rio+20 e a construção de cidades sustentáveis", 2012. [9] a. oliveira, r. jordão, r. resende, r. caputo and r. da silva, "projeto de residência com melhor aproveitamento energético residential project with better energy use", o setor elétrico, no. 109, 2015. [10] s. winoker, "ge announces plans to form three public companies". general eletric, 2021. [11] asbc, "sociedade do sol". asbc, 2001. [online]. available at: http://www.cds.unb.br/obmts [12] epe, "nota técnica dea 13/15 demanda de energia 2050". empresa de pesquisa energética (epe), 2016. [13] b. r. prado, t. t. pinto, e. g. fernandes and j. r. bartoli, "envelhecimento e caracterização de compostos de pvc usado em placas de coletores solares de baixo custo", 11° cbpol campos do jordão sp brazil: associação brasileira de polímeros, vol. 1., p. 5609-5614, 2011. [14] w. ariyawiriyanan et al., "thermal efficiency of solar collector made from thermoplastics", energy procedia, vol. 34, p. 500-505, 2013. [15] s. a. kalogirou, solar energy engineering, 1a., vol. 1. united states of america: british library cataloguingin-publication, 2009. [16] abnt, nbr 15569: sistema de aquecimento solar de água em circuito direto projeto e instalação direct circuit solar water heating system design and installation. 2008, p. 18. [17] nbr 15569, "sistema de aquecimento solar de água em circuito direto — requisitos de projeto e instalação". associação brasileira de normas técnicas, 2021. [18] arduino, "arduino uno", arduino, 2015. [19] maxim, "ds18b20 dallas semiconductor", dallas semiconductor, 2012. [20] e. avallone, p. c. mioralli, v. l. scalon, a. padilha and s. del r. oliveira, "thermal pyranometer using the open hardware arduino platform", int. j. thermodyn., vol. 21, no. 1, p. 1-5, mar. 2018. [21] e. avallone et al., “radiômetro solar de baixo custo usando a plataforma aberta arduino”, coleção desafios das engenharias: engenharia mecânica, 1o ed, atena editora, p. 79–91, 2021. [22] r. p. garcia, e. avallone, c. pansanato, g. b. gonçalves, m. c. ito, v. l. scalon, "thermal radiometer using lm35 analog sensors, connecting to an arduino board", in proceedings of encit, águas de lindóia sp: abcm, 2018, p. 1-8. [23] c. pansanato, g. b. gonçalves, m. c. ito, v. l. scalon, e. avallone and r. p. garcia, "low cost thermal pyranometer using dallas ds18b20 sensor and arduino", in proceedings of encit, águas de lindóia sp: abcm, 2018. [24] v. l. scalon, e. avallone, c. pansanato and m. ito, "development of a low cost pyranometer for solar radiation measurements", abcm, 2017. [25] ipmet unesp, "ipmet unesp". 2019. [26] dfrobot electronic product, "flow sensor yf-s401-1/8". [27] e. avallone, "estudo de um coletor solar, tipo tubo evacuado modificado, utilizando um concentrador cilíndrico parabólico (cpc)", phd thesis, universidade estadual paulista "júlio de mesquita filho" unesp/feb, brazil, 2017. [28] e. avallone, p. c. mioralli, v. l. scalon and a. padilha, "thermal pyranometer using the arduino platform for data acquisition", in proceedings of the 4th international conference on contemporary problems of thermal engineering, katowice, poland, 2016, p. 303-311. [29] j. a. duffie e w. a. beckman, solar engineering of thermal process, 4a., vol. 1. usa: john wiley & sons, 2013. [30] f. struckmann, "analysis of a flat-plate solar collector", in heat and mass transport, lund, sweden, 2008. [31] l. de o. tavares, v. v. dimbarre, f. m. biglia, f. b. c. cruz, p. h. d. dos santos and t. a. alves, "análise experimental do desempenho térmico de um coletor solar do tipo placa plana", em ia nas engenharias, em 1, vol. 1. paraná brazil: aprepro associação paranaense de engenharia de produção, dez. 2023, p. 1-11. instruction facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 407 417 doi: 10.2298/fuee1603407s a platform for a smart learning environment konstantin simić 1 , marijana despotović-zrakić 1 , živko bojović 1 , branislav jovanić 2 , đorđe knežević 1 1 faculty of organizational sciences, university of belgrade, serbia 2 institute of physics, university of belgrade, serbia abstract. in this paper, a modular platform which provides student services for smart educational environment is described. the platform represents a point of mutual integration of various services, such as hosting platform for students’ projects, platform for integrating sms service with students’ web applications, internet of things platform which enables acquiring data from sensors distributed within the university building and controlling various actuators. platform is deployed as a part of smart learning environment. it is integrated with single sign on service and it uses cas and oauth2. rest api is also provided. php symfony framework, relational and non-relational databases are used for deploying the platform. the platform was evaluated and tested. key words: smart environment, e-learning, web application, platform as a service 1. introduction internet of things (hereinafter: iot) enables interconnecting smart devices, such as sensors, actuators, microcontrollers and microcomputers with other information-communication infrastructure [1][2]. using smart devices brings increasing the level of automating everyday tasks which leads to gaining better productivity in many different environments. smart environments, such as smart homes, smart classrooms or smart factories, are formed by connecting and adding a large number of smart devices to an existing communication infrastructure. in education sphere, iot has wide application possibilities which have not used enough. by using adequate sensors and actuators, it is possible to track different features of a physical environment, to detect whether these features are in correlation with learning and teaching processes and to dynamically change some features of the environment according to needs. iot technologies are integral part of the smart learning environment such as smart classrooms. received july 3, 2015; received in revised form november 15, 2015 corresponding author: živko bojović faculty of organizational sciences, university of belgrade, jove ilića 154, 11000 belgrade, serbia (e-mail: zivko@elab.rs) 408 k. simić, m. despotović-zrakić, ž. bojović, b. jovanić, đ. knežević smart classroom is a concept which integrates several information and communication technologies to enable collaborative learning in order to improve the overall learning and teaching processes [3]. different technologies can be used for deploying a smart classroom, such as nfc, smart mobile devices, multimedia devices etc. furthermore, learning environment should be pleasant place for teaching and learning. therefore, smart classroom should be equipped with systems for heating and cooling, light and presence management, and with the necessary equipment for the realization of the teaching process. the hardware equipment in smart classrooms are usually managed by adequate software. existence of a platform that integrates all services in scope of smart learning environment is important for the teachers and students. this research represents a development of a platform for smart learning environment. these iot platform integrates several student services and collects data from the smart learning environment through various sensors, actuators, microcomputers and microcontrollers. the aim of this research is enhancing learning of internet of things in an academic environment by creating projects in developed iot platform. the research is conducted in scope of the department of e-business (hereinafter: elab), at the faculty of organizational sciences, university of belgrade. the elab iot platform was developed to help students to learn iot in an interesting way and achieve better learning outcomes. 2. literature review internet of things can be defined as a loosely coupled, decentralized system, made of smart objects or autonomous physical or digital network-equipped objects which are able to collect environmental data and to process these data [4]. the internet becomes a network of all devices, not solely computers. according to gartner’s predictions, around 26 billions of devices will have been an integral part of the internet by the year 2020 [5]. umbrella term “internet of things” is usually used for grouping sensors, actuators, microcontrollers and microcomputers into smart environments. sensors are analog or digital devices able to detect physical characteristic of the environment, such as temperature, humidity, pressure, levels of sound noice etc. [6]. actuators are devices which works like switches – they can be used for controlling other devices. sensors and actuators are not enough by themselves for creating smart environments. they are often used together with more complex devices, such as microcontrollers and microcomputers. in the sphere of the iot, a widely spread microcontroller platform is arduino and one of the best known microcomputers is raspberry pi. an important aspect of the iot is connecting with other networks. in the era of broadband technologies such as wifi and lte, this issue is especially growing. data provided by different devices should be available everytime and everywhere. by creating an adequate platform in the cloud, it is possible to integrate multiple data sources and to analyze these larage amounts of data. the vision of the internet of things can be seen from two aspects: the internet aspect, which focuses on providing adequate internet services, and the things aspect, which includes collecting and processing data aquired from devices. smart devices are going to be key-elements in software developed by using the object-oriented architecture. a platform for a smart learning environment 409 the iot platform can connect a sensor infrastructures which represent data generators with clients interesting in obtaining data which represent consumers. sensor infrastructure can contain one or many sensors. they can be mobile and connected to the same cloud wirelessly. data acquired by using the sensor infrastructure are stored into a nonrelational database. clients are able then to access these data [7]. database can be delocalized and distributed in order to exchange and store information. nowadays, iot platforms are based on cloud infrastructure. mainly these platforms are used for collecting data from sensors and other smart devices from the environment in which are implemented. cloud services and resources can be delivered by three cloud service models [8][9][10]: platform as a service (paas), software as a service (saas) and infrastructure as a service (iaas). in this research the focus is on iot paas. platform as a service enables the developers to consume the resources in iaas and deploy their applications onto a virtualized cloud platform [9]. one of the most widely used paas is xively. it is a free online service enabling developers to deploy their own application based on the iot and data acquired from sensors. xively manages large amounts of data every day. it is used by individuals, organizations and companies all around the world. data can be send from different sensors and devices. xively has the following features:  analysing and processing historical data acquired from sensors.  sending real-time notifications and alerts related to any devices.  calling custom scripts if user-defined conditions are fulfilled. xively is built to encourage open ecosystems, such as digital electric meters, weather stations biosensors and other devices. besides iot platforms like xively, there are also iot platforms which are developed for specific purposes. most of these platforms are used in business context for providing charged services. one example of these platforms is aneka paas which represents an adaptable, extensible and flexible cloud platform that enhance the performance and efficiency of applications by harnessing resources from private, public or hybrid clouds [4]. aneka supports provisioning resources on different public cloud providers such as amazon ec2, windows azure and gogrid. application domains of aneka are in the science, finance, entertainment and media, manufacturing and engineering, telecommunication, health and life science [11]. the clem project has established a cloud-based ecosystem for e-learning, resourcesharing and support for mechatronic vocational education teachers and learners [9]. clem is a platform that allows large number of distributed mechatronic devices to become sharable and to be used for e-learning. this paas is used for project realization. analysing studies from the literature, the authors concluded that there are lack of developed iot paas platforms for the educational purposes. the iot platform presented in this research was developed according to xively platform. elab iot platform is developed in php language and symfony framework. the main aim of the platform is collecting and evaluating data collected from the smart learning environment. furthermore, this platform is mainly developed to enhance learning iot and realization of internet of things project in an academic environment. the developed iot platform is an integral part of the elab student platform. elab iot platform can be integrated with other platforms and deployed in different smart environments. 410 k. simić, m. despotović-zrakić, ž. bojović, b. jovanić, đ. knežević 3. designing a platform for smart learning environment 3.1. platform architecture e-business department (elab) within the faculty of organizational sciences, university of belgrade, organizes courses in following fields: internet technologies, ebusiness, computer simulation, mobile computing, and internet marketing. each year, ecourses are attended by more than 700 students [12]. the central student service of the department is moodle, which enables enrolling students to different courses for all levels of studies, downloading all teaching materials and managing assignments. due to the specific nature of different subjects, it is needed to deploy new student services which enable new functionalities. for example, students enrolled to internet marketing course need to use web hosting and sms services, but students enrolled to internet of things course need to use a platform which can control sensors and actuators. all new services and platforms should be integrated and they should use sso (single sign on). student platform should include various heterogeneous services and it should be extendable. for that reason, the platform architecture has to be modular and integrated with other services. the logical infrastructure is shown in the figure 1. this solution should integrate a new platform with current services. by using the api, platform can be integrated with moodle lms. this integration enables gathering information about students and using this information in various contexts. fig. 1 a model of educational infrastructure based on the internet of things. a platform for a smart learning environment 411 the model consists of four components. cloud computing infrastructure and virtualized resources can be used for creating a highly-scalable and reliable infrastructure. identity management software is used for providing unique user accounts and single sign on services. lms is used for administrating courses for students. for running the lms, relational databases and web servers are required. big data infrastructure and non-relational databases (nosql) are used for collecting various data about students and data from sensors. the second component is an iot platform infrastructure, which consists of two subcomponents. the platform for learning iot enables students to use data from sensors, to control different actuators and to deploy their own smart environments for testing and educational purpose. the other subcomponent is related to the production environment where wireless sensor networks are used for enhancing students’ experience and for introducing new educational services. the last two components are used for integrating other components of the infrastructure and for providing external application programming interfaces (apis) to external users. elab student platform represents a point of integration of all student services. elab student is a modular platform. currently, the following modules are operational: 1. sms module, which enables integration with a sms gateway device and provides an api for sending and receiving short messages via public mobile network; 2. hosting module, which enables publishing students’ project on the internet; 3. iot module, which is used for publishing and reading data from sensors and managing actuators and other smart devices. the model of proposed architecture is shown in the figure 2. authentication authorization sso identity management common components html5 css3 js, jquery presentation moodle lms synchronization global configuration module configuration administration rest services web services user devices access main services modules data domains & dns ftp configuration hosting sending sms receiving sms sms projects devices sensors actuators iot fig. 2 the platform architecture 412 k. simić, m. despotović-zrakić, ž. bojović, b. jovanić, đ. knežević 3.2. digital identity management problems of digital identities are important in constructing platforms and other software solutions. separate identity layer is necessary in complex information system made from various heterogeneous parts. without the identity layer, integration of these parts would not be possible. digital identity is related to managing the relationship between individuals and objects that they use. it represents a set of digital subjects and their attributes. in other words, digital identity includes a set of information about the owner of the identity that can be an individual, company or even a service [13]. for managing digital identities, several protocols are used. saml is the best-known protocol for managing distributed identities [14]. it is a xml-based framework which provides user authentication and authorization. other frameworks which are used for identity management are cas, oauth, openid and others. a digital identity management tier enables centralized storage of all user accounts in ldap, as well as centralized authentication, authorization and single sign on/ single sign out features. cas server in combination with openldap and radius servers is used for digital identity management. cas (central authentication service) represents a single-sign on protocol and server developed by jasig. using this solution, users of the platform should enter their authentication credentials only once, afterwards they can have access to all pages they are authorized for (figure 3). cas server moodle lms elab student portal other services radius server ldap server services identity management fig. 3 platform services and identity management 3.3. use cases use cases of the elab iot platform are shown in the figure 4. there are four main use cases: project management, device management, sensor management and working with data from sensors. elab iot platform works with projects. students can create their iot projects and register team members. projects work similar as operating system’s folders. each project can be private (viewable only by team members) and public (viewable by all users). in each projects, devices, such as raspberry pi or arduino, can be registered. for each device, some metadata, such as ip address and location, can be added. under devices, particular sensors and actuators which are physically connected to the device can be added. students can use the api to write data from devices, sensors and actuators, to the platform. a platform for a smart learning environment 413 fig. 4 the platform use cases 4. deploying a platform for smart learning environment 4.1. technologies used in deployment the platform for iot is highly modular and it is created as a part of elabstudent platform which integrates all student services. elab iot platform is developed in php language and symfony framework. symfony includes reusable php components which enable creating powerful web application. it is a mvc-based framework. for rendering views, twig templating engine is used and for working with data, preferable data-mapping tool is doctrine orm. for developing elab iot platform, both relational (mysql with doctrine orm) and non-relational (mongodb) databases are used. mongodb is nosql database which uses bjson data collections. this data format is human-readable and it is convenient for working with large sets of data. for communicating with cas server, besimplessoauthbundle is used. this bundle can map user entities created in symfony to cas users. also, cas login and registration forms are used. 4.2. core component of the platform the core component of elab student platform integrates all modules, identity service, templates, identity module and tools for integration with other software. this component 414 k. simić, m. despotović-zrakić, ž. bojović, b. jovanić, đ. knežević enables registering new users to the platform. also, it manages which services are available to particular students. administrator is able to deny access to particular services or to the whole platform. elab student platform uses bootstrap frontend framework for designing templates. the basic template is slightly modified to suit the needs of the platform. the homepage of the platform, where students can choose their desired service, is shown in the figure 5. fig. 5 the platform homepage 4.3. internet of things module the module for the internet of things is one of the key-features of the platform. using this module, students can add their iot projects, devices they work with and sensors and actuators. students are able to use the provided api to send actual data collected from sensors and to read historical data, measured at any moment. this platform stores various metadata related to devices and sensors. for devices, user can define their type, latitude, longitude, image and description. for sensors, user can set their reliability, type, measuring units, image and description. in the following figure, a procedure for creating a new project is shown. first, a student can select team members from the list. all students who have had cas account, who have been registered to the elab student platform and who have not had created an iot project are shown in the list. afterwards, they can add devices which they want to include to the project. finally, students can view values from sensors and the graph of historical values. they can also filter the graph by entering start and end date and time they want to see in the graph (figure 7). a platform for a smart learning environment 415 fig. 6 creating a project fig. 7 graph with sensor data 4.4. results of using the platform in order to evaluate the usability of the designed environment, the research was conducted in the scope of the course internet of things on undergraduate studies at the faculty of organizational sciences, university of belgrade. in this research, 37 students 416 k. simić, m. despotović-zrakić, ž. bojović, b. jovanić, đ. knežević participated. all of them had similar backgrounds and interests in the sphere of business informatics. this course consisted of 12 lectures, which were grouped into the following topics: introduction to internet of things technologies, defining scenarios for automating smart environments, microcomputers and microcontrollers, developing web services, developing web and mobile applications for smart environments automation. after completing the course, students' knowledge was evaluated. students' assignments, projects and knowledge tests were used to calculate the final grade. each assignment was a part of the final students' project. each project was related to designing and implementing of a smart environment such as smart home, smart classroom, smart parking, etc. for the implementation of a smart environment students used elab iot platform. the average grade that students achieved on the course was 8.75 (on a scale of 6 to 10). during the course, students were given a survey. questions were mostly based on the five-point likert scale. students were asked to assess the quality the four topics studied during the course: arduino, raspberry pi, web applications and web services. all the topics were studied using the described platform. table 1 shows summary results of the survey analysis for each (x mean grade, from 1 to 5; 𝛿 standard deviation). table 1 survey analisis parameter topic x 𝛿 interesting arduino 4.31 0.62 raspberry pi 4.43 0.65 web applications 4.22 0.67 web services 3.89 0.81 simplicity arduino 4.03 0.65 raspberry pi 3.81 0.66 web applications 3.30 1.27 web services 3.62 1.01 motivation arduino 4.22 0.64 raspberry pi 4.05 0.70 web applications 3.51 0.90 web services 3.59 0.801 evaluation results show that the students were interested in learning iot and developing smart environments using the described platform. the designed platform could effectively support teaching and learning, leading to good results on knowledge tests and high level of students' satisfaction and motivation. 5. conclusion in this paper, we designed and deployed an internet of things platform. this platform was a part of the broader elab student platform and it was able to help students with their iot projects. students were able to register their iot devices and to send data from them to the platform. also, they were able to browse save data. in the future, this platform is going to be extended with more features. one of planned functionalities is better integration with big data infrastructure. a platform for a smart learning environment 417 acknowledgement: the paper is a part of the research done within the project 174031. the authors would like to thank to the mntrs for financial support. references [1] l. atzori, a. iera, g. morabito, the internet of things: a survey, computer networks, vol. 54, issue 15, 28 october 2010, pp. 2787-2805. [2] e. borgia, the internet of things vision: key features, applications and open issues, computer communications, vol. 54, 2014, pp. 1-31. [3] s.s. yau, s.k.s. gupta, e.k.s. gupta, f. karim, s.i. ahamed, y. wang, b. wang, smart classroom: enhancing collaborative learning using pervasive computing technology, in asee 2003 annual conference and exposition, 2003, pp13633-13642. [4] j. gubbi, r. buyya, s. marusic, and m. palaniswami, “internet of things (iot): a vision, architectural elements, and future directions,” futur. gener. comput. syst., vol. 29, no. 7, pp. 1645-1660, 2013. [5] gartner, “gartner identifies the top 10 strategic technology trends for 2014,” gartner, orlando, florida, 2013. [online]. available: http://www.gartner.com/newsroom/id/2603623. [6] s. s. iyengar, n. parameshwaran, v. v. phoha, n. balakrishnan, and c. d. okoye, fundamentals of sensor network programming: applications and technology. wiley-ieee press, 2010. [7] c. floerkemeier, the internet of things: first international conference, iot 2008, march 26-28, 2008, proceedings, vol. 4952. zurich, switzerland: springer, 2008. [8] l. george, developing software online with platform-as-a-service technology, ieee comput., vol. 41, 2008, pp. 13-15. [9] k.-m. chaoa, a. e. jamesa, a. g. nanosa, j.-h. chena, s.-d. stan, i. muntean, g. figliolini, p. rea, c. b. bouzgarrou, p. vitliemov, j. cooper, j. van capelle, “cloud e-learning for mechatronics: clem”, future generation computer systems, vol. 48, 2015, pp. 46-59. [10] m. despotović-zrakić, k. simić, a. labus, a. milić, b. jovanić, 2013 scaffolding environment for adaptive e-learning through cloud computing. educational technology & society, 16(3), pp. 301-314. [11] y. wei, k. sukumar, c. vecchiola, d. karunamoorthy and r. buyya, chapter 27. aneka cloud application platform and its integration with windows azure, in cloud computing methodology, systems, and applications edited by boualem benatallah, crc press 2011, pp. 645–679. [12] a. labus, k. simić, m. vulić, m. despotović-zrakić, and z. bogdanović, “an application of social media in elearning 2.0,” in proceedings of the 25th bled econference edependability: reliable and trustworthy estructures, eprocesses, eoperations and eservices for the future, 2012, pp. 557–572. [13] y. zhang and j.-l. chen, "universal identity management model based on anonymous credentials," in proceedings of the 2010 ieee international conference on services computing (scc), 2010. [14] k. d. lewis and j. e. lewis, “web single sign-on authentication using saml,” int. j. comput. sci. issues, vol. 1, no. 8, pp. 41-48, 2009. instruction facta universitatis series:electronics and energetics vol. 27, no 1, march 2014, pp. 1 11 doi: 10.2298/fuee1401001c microstructural impact on electromigration: a tcad study  hajdin ceric 1,2 , roberto lacerda de orio 2 , wolfhard h. zisser 1,2 , siegfried selberherr 2 1 christian doppler laboratory for reliability issues in microelectronics at the institute for microelectronics, tu wien, austria 2 institute for microelectronics, tu wien, gußhausstraße 27–29, a-1040 wien, austria abstract. current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. therefore, the main objective of our work was obtaining more sophisticated electromigration models. the problem is addressed through a combination of different levels of atomistic modeling and already available continuum level macroscopic models. a novel method for an ab initio calculation of the effective valence for electromigration is presented and its application on the analysis of em behavior is demonstrated. additionally, a simple analytical model for the early electromigration lifetime is obtained. we have shown that its application gives a reasonable estimate for the early electromigration failures including the effect of microstructure. keywords: electromigration, interconnect, reliability, physical modeling, simulation 1. introduction electromigration (em) experiments indicate that the copper interconnect lifetime decreases with every new interconnect generation. in particular, fast diffusivity paths cause a significant variation in the interconnect performance and em degradation [1]. in order to produce more reliable interconnects, the fast diffusivity paths must be addressed when introducing new designs and materials. the em lifetime depends on a variation of material properties at the microscopic and atomistic levels. microscopic properties are grain boundaries and grains with their crystal orientation [2]. atomistic properties are configurations of atoms at the grain boundaries, at the interfaces to the surrounding layers, and at the cross-section between grain boundaries and interfaces. modern technology computer-aided design (tcad) tools, in order to meet the challenges of contemporary interconnects, must cover two major  received december 16, 2013 corresponding author: hajdin ceric christian doppler laboratory for reliability issues in microelectronics at the institute for microelectronics, tu wien, austria (e-mail: ceric@iue.tuwien.ac.at) 2 h. ceric, r. lacerda de orio, w. zisser, s. selberherr areas: physically based continuum-level modeling and first-principle/atomistic-level modeling. we present a computationally efficient ab initio method for calculation of the effective valence for em and the atomistic em force. the results of these ab initio calculations are applied for parameterization of a continuum-level model [7] and for simulation of the impact of the copper microstructure on the em behavior. additionally, an application of the kinetic monte carlo method in combination with the ab initio method for em analysis is demonstrated. results of ab initio and atomistic calculations are also used for the derivation of a compact model for early em failures in copper dual-damascene m1/via structures. the model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. it is demonstrated that the early em lifetime is well described by a simple analytical expression, from where its statistical distribution can be obtained. moreover, it is shown that the simulation results provide a reasonable estimate for the em lifetimes. 2. theoretical background 2.1. electronic density based calculation of effective valence generally, the effective valence is a tensor field ( ̅), which defines a linear relationship between the em force ( ⃗) and an external electric field ( ⃗⃗). ⃗⃗( ⃗⃗⃗) ̅ ⃗⃗⃗ ⃗⃗⃗ (1) for the calculation of the effective valence several methods have been proposed, all of them being based on the computation of electron scattering states [3]. density functional theory (dft), in connection with the augmented plane wave (apw) method [4] or the korringa-kohn-rostoker (kkr) method [5], has been established as the most powerful method for the determination of scattering states, however, it requires a demanding computational scheme. the cumbersome representation of scattering wave functions with many parameters is a heavy burden on stability and accuracy of subsequent numerical steps. in this work we introduce a more robust and efficient method to calculate the effective valence, which relies only on the electron density ⃗⃗ ⃗ . the basic idea is given in the following equations for the tensor components: ( ⃗⃗⃗) ∭ ⃗⃗ ( ⃗⃗⃗) ( ⃗⃗)[ ⃗⃗( ⃗⃗) ̂ ] ∭ ⃗ ( ⃗⃗ ⃗)[ ⃗⃗⃗ ( ⃗⃗⃗ ⃗) ̂ ] is the interaction potential between an electron and the migrating atom, ( ⃗⃗) is the relaxationtime due to scattering by phonons, ⃗( ⃗⃗) is the electron group velocity, and is the volume of a unit cell. the first integration is over the k-space and the second over the volume of the crystal. for the calculation of the electron density the dft tool vasp [6] is used. an example of a vasp calculation is given in fig. 1. microstructural impact on electromigration: a tcad study 3 the electron density alone provides a qualitative explanation for the fact that the effective valence is higher in the bulk than in the grain boundaries. similar analyses can be performed for atomic structures of different copper/insulator interfaces. higher electron densities lead to higher effective valences, as can be seen from (2) [7]. for an accurate electron density calculation it is necessary to know the exact positions of the atoms in the structure. fig. 1 portion of the bulk copper crystal. the electron density is represented in two orthogonal planes. it varies from higher values (circle regions around atoms) closer to the atomic nucleus to lower in the inter-atomic space 2.2. kinetic monte carlo simulation of electromigration to utilize results of quantum mechanical calculations for kinetic monte carlo simulations an average driving force along the diffusion jump path must be calculated. in general, the microscopic force-field depends on the position of the defect along the diffusion jump-path. the average of the microscopic force over the j-th diffusion jump path between locations ⃗ and ⃗ [3] is ⃗⃗ ⃗⃗ ∫ ⃗⃗ ⃗ ⃗⃗ ⃗⃗ ⃗ (3) the change in diffusion barrier height is equal to the net work by the microscopic force as the defect is moved from the initial to final sites over the entire jump path. the rates of defect jumps were calculated using the harmonic approximation to transition state theory (tst) [9]. in this approximation the transition rate is given by (4) is the migration energy (barrier) defined as the difference in energy between the transition state and the initial state, and is an attempt frequency [10]. for each defect site α the residence time is calculated as [11] 4 h. ceric, r. lacerda de orio, w. zisser, s. selberherr ∑ (5) is the number of possible jump sites from the site α. a single point defect is created at an arbitrary site, the clock is set to zero, and the defect is released to walk through the system. at each step, the jump direction is decided by a random number according to the local jump probabilities (6) the jump is implemented by updating the coordinates of the defect. by repeating the described random walk procedure for millions of defects, their concentration dependence on the effective valence tensor and the external field is calculated. 2.3. compact model for lifetime estimation in order to calculate the mechanical stress in a three-dimensional copper dual damascene interconnect structure, a complex physically based model including the em equation, the electro-thermal equation, and the mechanical equations has to be solved [7]. korhonen et al. [14] proposed a simple one-dimensional model, where the solution for the stress at the cathode of a semi-infinite line is given by √ √ (7) da is the effective atomic diffusivity and b is the effective modulus, which depends on the metal and the surrounding materials. void formation occurs as soon as the mechanical stress reaches a critical magnitude at a site of weak adhesion, typically at the copper/capping layer interface [15], [16]. thus, the void nucleation time is determined by the condition σ(tn)= σc, which applied to (7) yields ( ) (8) where is the critical stress.the solution given by (8) is a good approximation to the more complete solutionobtained by solving a full physical model [7], [13] numerically, as will be shown later. it should be pointed out that (8) is valid as long as the stress remains significantly smaller than the stress magnitude at the steady state condition, which holds true for the void formation phase. fig. 2 early failure mode: slit void growth under the via microstructural impact on electromigration: a tcad study 5 2.4. void growth for a copper dual-damascene m1/via structure with downstream electron flow, em failure analyses [11] indicate that the early failures are caused by slit voids located under the via, as shown in fig. 2. since the void is very thin and does not grow through the line height, void growth can be described by a one-dimensional process, so that the void length is given by (9) where is the drift velocity of the right edge of the void. the atomic flux into the right edge of the void is governed by the diffusivity of the copper/barrier layer interface , while the outgoing flux is governed by the surface diffusivity . since , using the nernst-einstein equation one can write [17] (10) the em failure occurs, when the void spans the via size, , so that the void growth time contribution to the em lifetime is given by (11) 3. results and discussion the ab initio method described above is applied for the calculation of the effective valence inside grain boundaries and the calculated value is used to parameterize our continuum-level model [7]. prior to carrying out the ab initio calculation it is necessary to construct grain boundaries with exact positions of atoms. for this purpose an in-house molecular dynamic (md) simulator with a many-atom interatomic potential based on effective-medium theory [8] is used. the total energy of the system is expressed as ∑ ∑ ∑ ( ) (12) fig. 3 formation of grain boundaries (circled regions) for a n-atom system, where v(rij) describes a pair potential and f(ni) describes the energy due to the electron density. an example of the construction of grain boundaries by means of md simulation is presented in fig. 3. 6 h. ceric, r. lacerda de orio, w. zisser, s. selberherr ab initio calculations of the effective valence in copper grain boundaries have provided a value 75% lower than in the bulk for 4.3 ev fermi energy (cf. fig. 4), which is in good agreement with the results of sorbello [3]. along with the determination of the effective valence, ab initio calculations predict a lowering of the energy barrier for atomistic transport. knowing the influence of the em force on the diffusional barrier we utilize kinetic monte carlo [9] simulations for em, which provide a closer look into the distribution of atoms in the presence of em for a specific atomistic configuration. the dependence of the atomic concentration on the angle between the em force and the jump direction is displayed in fig. 5. the em intensity clearly reduces from θ = 0 ◦ , where the em force acts in the fast diffusivity path direction, to a minimum for θ = 90 ◦ , where the em force is orthogonal to this direction. ab inito calculations serve as basis to give a proper consideration of fast diffusivity paths and microstructure in the comprehensive physically based model [7].the solution of such a model is indeed rather complex and a detailed description of the numerical approach can be found in [13]. fig. 4 average distribution of the effective valence near a grain boundary. the external electric field is oriented parallel to the grain boundary fig. 5 concentration difference at four different angles () between the em force and the atom migration paths microstructural impact on electromigration: a tcad study 7 fig. 6 shows the mechanical stress close to the via at the cathode end of a simulated line. a high stress develops adjacent to the via, where there is a line of intersection between the copper, the capping layer, and the barrier layer. for a copper dual-damascene m1/via structure with downstream electron flow, this is the typical site for void formation and growth leading to early em failures. since em failure has a statistical character, in order to obtain a distribution of void nucleation times several lines with different microstructures were simulated. in particular, the mechanical stress under the via was monitored for a total of twenty lines, from where the resulting stress build-up for five different structures is shown in fig. 7. we have observed that the time evolution of the stress curves can be divided into two main parts. in the first one the stress increases linearly with time, while in the second part it increases with the square root of time, as shown in fig. 8 for a typical stress curve. it should be pointed out that kirchheim [18] derived a linear stress increase from a onedimensional version of a full physical model [7] under the condition that the stress is sufficiently low. in turn, korhonen et al. [14] obtained a square root stress increase, as given by (7), from the solution of a simplified model for em stress buildup. thus, the stress build-up obtained from our numerical simulations with a rather complete model and for fully three-dimensional structures can be conveniently described by simple analytical solutions. since void nucleation is expected to occur at high stress magnitudes, the second part of the stress curve shown in fig. 8 is fitted by the square root model given in (7), where a is used as fitting parameter. by fitting the stress curves of all simulated structures, the distribution of the parameter a is determined, as shown in fig. 9. the parameter is well described by lognormal statistics, where the mean and the standard deviation are mpa/s 1/2 and , respectively. once a is known, the void formation time is obtained from (8). since the distribution of a is also determined, we are able to obtain the statistical distribution of the void formation times, shown in fig. 10. due to the lognormal statistics of a, also follows a lognormal distribution, where the mean and standard deviation are h and . it should be pointed out that filippi et al. [12] estimated a nucleation time of approximately 5h, which lies within the range predicted by the simulations. fig. 6 hydrostatic stress distribution (in mpa). high stress develops at the copper/capping/barrier layer intersection adjacent to the via 8 h. ceric, r. lacerda de orio, w. zisser, s. selberherr the void growth time is determined by (11), which is a function of the surface diffusivity. choi et al. [17] obtained activation energy for surface diffusivity of ev on clean copper surfaces. it is expected that their measurement delivers a more precise copper surface diffusivity than the typical ones obtained on oxidized surfaces [17] and, therefore, we have used their estimate in our simulations. furthermore, we have assumed that the activation energy follows a normal distribution [19]. as a consequence, both the surface diffusivity and the void growth time are lognormally distributed. the mean and the standard deviation of the void growth time distribution are h and , respectively. the void formation and the void growth times are of about the same order of magnitude, as shown in fig. 10, which highlights the importance of considering both contributions for the early em lifetime estimation under accelerated test conditions. fig. 7 stress build-up at the copper/capping/barrier layer intersection for lines with different microstructures fig. 8 fitting of a numerical solution using a linear and a square root model microstructural impact on electromigration: a tcad study 9 as the void nucleation and the void growth times are known, the early em lifetime is given by the combination of (8) and (11), ( ) (13) the distributions of the em lifetimes are shown in fig. 10, together with the experimental results obtained from filippi et al. [12]. the lognormal mean and standard deviation of the simulated lifetimes are ̅ h and , we can see that the simulation results provide a reasonable description for the early em lifetimes. a major advantage of (13) is that it is a simple analytical formula which is more rigorously related to the physical mechanisms active during the early em failure development than black's equation. a critical issue arises, however, with regard to the estimation of the parameter a. this parameter is affected by several factors, like diffusion coefficients, effective valence, mechanical moduli, microstructure, and more, so that it cannot be defined in a closed form in full physical modeling [7], [13]. nevertheless, we have observed that it can be related to korhonen's solution. in this way, it can be directly described by an analytical expression and connected to physical parameters according to (7). fig. 9 distribution of the square root model fitting parameter. the line represents a lognormal fit the relative difference between the simulated and experimental lifetimes for the same failure percentile varies between 15% and 20%, as shown in fig. 11. the difference is smaller for shorter lifetimes, since the proposed slit void growth model is more accurate for very early failures, where the void volumes are smaller. such an error magnitude is reasonable, given the required assumptions for the parameters and considering the simplicity of the model. 10 h. ceric, r. lacerda de orio, w. zisser, s. selberherr fig. 10 early em lifetime distribution fig. 11 error between the simulation and the experimental results 4. conclusion our work demonstrates a novel approach for the calculation of the em force on an atomistic level and its application to continuum-level modeling. the consideration of the accurate effective valence in grain boundaries allows a realistic simulation of em behavior. the presented combination of atomistic force calculations with a kinetic monte carlo simulation enables sophisticated analyses of vacancy dynamics. a compact model for estimation of the early em lifetimes in m1/via structures of copper dual-damascene interconnects was developed. the model was derived through the combination of a complete model for void nucleation together with a simple slit void growth mechanism under the via. given the simplifications and assumptions made for the simulations, a reasonable approximation to experimental early em failures has been obtained. microstructural impact on electromigration: a tcad study 11 acknowledgment: this work was partly supported by the austrian science fund fwf, project p23296-n13. references [1] z.-s. choi, r. mönig, and c. v. thompson, "dependence of the electromigration flux on the crystallographic orientations of different grains in polycrystalline copper interconnects," appl. phys. lett., vol. 90, p. 241913, 2007. [2] e. zschech and p. r. besser, "microstructure characterization of metal interconnects and barrier layers: status and future," proc. interconnect technol. conf., pp. 233-330, 2000. [3] r. s. sorbello, "microscopic driving forces for electromigration," in materials reliability issues in microelectronics, edited by j. r. lloyd, f. g. yost, and p. s. ho, vol. 225 pp. 3-10, 1996. [4] r. p. gupta, "theory of electromigration in noble and transition metals," phys. rev. b, vol. 25, pp. 5118-5196, 1982. [5] d. n. bly and p. j. rous, "theoretical study of the electromigration wind force for adatom migration at metal surfaces," phys. rev. b, vol. 53, pp. 13909, 2006. [6] g. kresse and j. furthmüller, "efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set," phys. rev. b, vol. 54, pp. 11169, 1996. [7] h. ceric, r. l. de orio, j. cervenka, and s. selberherr, "a comprehensive tcad approach for assessing electromigration reliability of modern interconnects," ieee trans. dev. mat.rel., vol. 9, pp. 9,2009. [8] k. w. jacobsen, j. k. norskov, and m. j. puska, "interatomic interactions in the effective-medium theory," phys. rev. b, vol. 35, pp. 7423, 1987. [9] r. sorensen, y. mishin, and a. f. voter, "diffusion mechanisms in cu grain boundaries," phys. rev. b, vol. 62, pp. 3658, 2000. [10] m. gall, c. capasso, d. jawarani, r. hernandez, h. kawasaki, and p. s. ho, "statistical analysis of early failures in electromigration," j. appl. phys., vol. 90, no. 2, pp. 732-740, 2001. [11] a. s. oates and m. h. lin, "electromigration failure distribution of cu/low-k dual-damascene vias: impact of the critical current density and a new reliability extrapolation methodology," ieee trans. device mater. rel., vol. 9, no. 2, pp. 244-254, 2009. [12] r. g. filippi, p.-c.wang, a. brendler, p. s. mclaughlin, j. poulin, b. redder, and j. r. lloyd, "the effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper [13] interconnects," proc.intl. reliability physics symp., pp. 444-451, 2009. [14] r. l. de orio, dissertation, technische universität wien, (2010). [online]. available: http://www.iue. tuwien.ac.at/phd/orio/ [15] m. a. korhonen, p. borgesen, k. n. tu, and c.-y. li, j. "stress evolution due to electromigration in confined metal lines," appl. phys., vol. 73, no. 8, pp. 3790-3799, 1993. [16] r. j. gleixner, b. m. clemens, and w. d. nix, "void nucleati on in passivated interconnect lines: effects of site geometries, interfaces, and interface flaws," j. mater. res., vol. 12, pp. 2081-2090, 1997. [17] m. w. lane, e. g. liniger, and j. r. lloyd, "relationship between interfacial adhesion and electromigration in cu metallization," j. appl. phys., vol. 93, no. 3, pp. 1417-1421, 2003. [18] z. s. choi, r. mönig, and c. v. thompson, "activation energy and prefactor for surface electromigration and void drift in cu interconnects," j. appl. phys., vol. 102, p. 083509, 2007. [19] r. kirchheim, "stress and electromigration in al-lines of integratedcircuits," acta metall. mater., vol. 40, no. 2, pp. 309-323, 1992. [20] l. doyen, x. federspiel, l. arnaud, f. terrier, y. wouters, and v. girault, "electromigration multistress pattern technique for copper drift velocity and black's parameters extraction," proc. intl. integrated [21] reliability workshop, pp. 74-78, 2007. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 547 570 https://doi.org/10.2298/fuee1804547m vladimir m. milovanovic received september 10, 2018 corresponding author: vladimir m. milovanović department of electrical engineering, faculty of engineering, university of kragujevac, sestre janjic 6, 34000 kragujevac, serbia (e-mail: vlada@kg.ac.rs) facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications tomislav suligoj1, marko koričić1, josip žilak1, hidenori mochizuki2, so-ichi morita2, katsumi shinomura2, hisaya imai2 1university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 9, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) on fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors faculty of engineering university of kragujevac abstract. the diverse application areas of emerging monolithic noncontact radar sensors that are able to measure object’s distance and velocity is expected to grow in the near future to scales that are now nearly inconceivable. a classical concept of frequency-modulated continuous-wave (fmcw) radar, tailored to operate in the millimeter-wave (mm-wave) band, is well-suited to be implemented in the baseline cmos or bicmos process technologies. high volume production could radically cut the cost and decrease the form factor of such sensing devices thus enabling their omnipresence in virtually every field. this introductory paper explains the key concepts of mm-wave sensing starting from a chirp as an essential signal in linear fmcw radars. it further sketches the fundamental operating principles and block structure of contemporary fully integrated homodyne fmcw radars. crucial radar parameters like the maximum unambiguously measurable distance and speed, as well as range and velocity resolutions are specified and derived. the importance of both beat tones in the intermediate frequency (if) signal and the phase in resolving small spatial perturbations and obtaining the 2-d range-doppler plot is pointed out. radar system-level trade-offs and chirp/frame design strategies are explained. finally, the nonideal and second-order effects are commented and the examples of practical fmcw transmitter and receiver implementations are summarized. key words: fmcw, frequency-modulated continuous-wave, radar, mm-wave,linear chirp, range-doppler, sensors, radar-on-a-chip (roc), single-chip radar. 502 v. milovanović 1 introduction applications of portable short-range contact-less radar sensors which provide simultaneous information on the presence, position and relative radial velocity are virtually countless. these radar systems not only have the potential to improve the service quality in numerous existing fields [1–3], but are also expected to be the driving force for many novel use-cases in the near future. multiple sensing technologies based on laser/optical, ultrasound and radio waves have been proposed in the past. among those, the millimeter-wave (mm-wave) radio frequency radars attracted considerable attention thanks to their robustness [4] against bad weather conditions and harsh environments. historically, mm-wave radar sensors were built from discrete components and therefore reserved only for low-volume markets. however, a prospective single-chip integrated solution with a low unit cost and small form factor, often referred to as the radar-on-chip (roc), would lead to its omnipresence in consumer and industrial electronic devices, along with probable pervasive use in a variety of areas spanning from automotive to healthcare. two fundamentally different microwave ranging methods, a pulse-based and continuous-wave (cw), coexist. the former ones are simply inefficient for monolithic integration [5], as they inherently suffer from higher peak(-toaverage) power. unmodulated cw radars can only determine the relative target velocity through the doppler shift. nevertheless, if the appropriate [6] kind of carrier modulation is employed, distances can also be resolved. pseudorandom noise modulated cw radars [7] that exploit pulse compression techniques for temporal energy distribution are a viable option especially for lower node digitally-intensive implementations [8], but come with a major drawback [9] that their baseband bandwidth equals half of the radio frequency (rf) one. this fact proves to be particularly bothersome in ultrahigh resolution sensors where power-hungry data converters are unavoidable. finally, the classical frequency-modulated cw (fmcw) radar, as will be presented by this article, in its simplest homodyne incarnation, transmits a sequence of linear chirps that are simultaneously used as a local oscillator signal for the receiver’s frequency mixer. assuming no nonlinear distortions occur on the pathway, when the transmitted chirp is mixed with its received reflections that are attenuated, delayed in time and possibly shifted in frequency the intermediate frequency, being the low-pass filtered heterodyning product, will contain information on the target’s distance (via time of flight) and its velocity (doppler effect). by analogy with acoustics, the resulting frequency difference, at the mixer’s output is referred to as the beat frequency. 548 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 549 502 v. milovanović 1 introduction applications of portable short-range contact-less radar sensors which provide simultaneous information on the presence, position and relative radial velocity are virtually countless. these radar systems not only have the potential to improve the service quality in numerous existing fields [1–3], but are also expected to be the driving force for many novel use-cases in the near future. multiple sensing technologies based on laser/optical, ultrasound and radio waves have been proposed in the past. among those, the millimeter-wave (mm-wave) radio frequency radars attracted considerable attention thanks to their robustness [4] against bad weather conditions and harsh environments. historically, mm-wave radar sensors were built from discrete components and therefore reserved only for low-volume markets. however, a prospective single-chip integrated solution with a low unit cost and small form factor, often referred to as the radar-on-chip (roc), would lead to its omnipresence in consumer and industrial electronic devices, along with probable pervasive use in a variety of areas spanning from automotive to healthcare. two fundamentally different microwave ranging methods, a pulse-based and continuous-wave (cw), coexist. the former ones are simply inefficient for monolithic integration [5], as they inherently suffer from higher peak(-toaverage) power. unmodulated cw radars can only determine the relative target velocity through the doppler shift. nevertheless, if the appropriate [6] kind of carrier modulation is employed, distances can also be resolved. pseudorandom noise modulated cw radars [7] that exploit pulse compression techniques for temporal energy distribution are a viable option especially for lower node digitally-intensive implementations [8], but come with a major drawback [9] that their baseband bandwidth equals half of the radio frequency (rf) one. this fact proves to be particularly bothersome in ultrahigh resolution sensors where power-hungry data converters are unavoidable. finally, the classical frequency-modulated cw (fmcw) radar, as will be presented by this article, in its simplest homodyne incarnation, transmits a sequence of linear chirps that are simultaneously used as a local oscillator signal for the receiver’s frequency mixer. assuming no nonlinear distortions occur on the pathway, when the transmitted chirp is mixed with its received reflections that are attenuated, delayed in time and possibly shifted in frequency the intermediate frequency, being the low-pass filtered heterodyning product, will contain information on the target’s distance (via time of flight) and its velocity (doppler effect). by analogy with acoustics, the resulting frequency difference, at the mixer’s output is referred to as the beat frequency. on range-doppler estimation in integrated fmcw radar sensors 503 recently, the fmcw radars drew considerable attention [10–21], partially owing to their high integration potential. although the main driver in developing these small footprint solutions was the automotive industry [1], a gradual breakthrough into other spheres is evident. regulatory committees of the itu and the etsi even assigned the dedicated 77-81 ghz range in the w-band as part of the spectrum to be automotive specific, which is often referred to as the so-called “short-range radar” (srr) band. in spite of that, having a device that could operate in the frequency band where an unlicensed spectral emission is permitted would be favorable for its widespread adoption. namely, choosing one of the industrial, scientific, and medical (ism) radio bands might turn out advantageous for cross-disciplinary expansion of fmcw-based sensors that will not be limited to vehicular radar systems. the mm-wave radars can grasp important benefits of higher frequency operation that are not only related to its antenna size. as will be also shown in the next sections, the fmcw multitarget differentiation ability is directly proportional to the irradiated chirp bandwidth. in the prospect of the fcc’s relatively recent extension of the unlicensed part in the v band [22], that now incorporates a complete 57-71 ghz frequency range, previously unfeasible spatial target discrimination is enabled. in other words, these 14 ghz of a contiguous unlicensed spectrum translate to a centimeter-order space resolution, thus allowing fmcw-type radars to be used in complex indoor and outdoor scenes which contain an abundance of close proximity objects. all this sets a fruitful ground for a universal ranging radar devices, which will dominate the future markets. the first commercial roc solutions already appeared [23] and more are following and are expected to follow fairly soon. this paper is intended to make a rather gentle introduction to the area of integrated fmcw mm-wave radar sensors as they are presently build. it focuses on main operating principles in estimating object distance/range and its relative radial velocity in sensor devices that are based on fast fmcw modulation and slow time processing which gives multiple advantages. in order to follow the elaborated matter, a general undergraduate-level knowledge in electronics and signal processing is assumed. the rest of the paper is organized as follows. concept of a frequency chirp as the fundamental signal in fmcw radars is introduced in section 2. further in section 3 it is elaborated on the operating principles of fmcw sensors with two subsections each devoted to range and velocity estimation. final subsection gives some system-level trade-offs and explains chirp/frame design decisions. present state of the art fmcw radar transmitter and receiver architectures are examined in section 4 and finally section 5 concludes the article. 548 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 549 504 v. milovanović −ac 0 +ac t0 t0 + tc t0 + 2tc f0 fc f0 +b t0 t0 + tc t0 + 2tc am pl it ud e a (t ) time t fr eq ue nc y f (t ) time t fig. 1. a time sequence of linear up-chirp waveforms plotted as amplitude versus time (upper subplot) and frequency versus time (lower subplot) resembling the sawtooth wave. 2 chirp as the fundamental signal of an fmcw radar a sine wave or a sinusoid whose frequency increases (up-chirp) and/or decreases (down-chirp) with time is called a chirp or, although less often in this context, a sweep. in particular, linear chirps, i.e. signals in which the frequency changes linearly with time, are at the heart of every fmcw radar. specifically, in a linear chirp, a representative example of which is plotted in fig. 1, the instantaneous frequency f varies exactly linearly with time t: f(t) = f0 + b tc (t− t0) = f0 + s(t− t0) , (1) where f0 is the starting frequency at time point t = t0, while s = b/tc is the rate of frequency change or the frequency slope, sometimes also referred to as the chirpyness. the slope is defined using two parameters, namely the chirp bandwidth b and its duration tc, also called the modulation time. 550 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 551 504 v. milovanović −ac 0 +ac t0 t0 + tc t0 + 2tc f0 fc f0 +b t0 t0 + tc t0 + 2tc am pl it ud e a (t ) time t fr eq ue nc y f (t ) time t fig. 1. a time sequence of linear up-chirp waveforms plotted as amplitude versus time (upper subplot) and frequency versus time (lower subplot) resembling the sawtooth wave. 2 chirp as the fundamental signal of an fmcw radar a sine wave or a sinusoid whose frequency increases (up-chirp) and/or decreases (down-chirp) with time is called a chirp or, although less often in this context, a sweep. in particular, linear chirps, i.e. signals in which the frequency changes linearly with time, are at the heart of every fmcw radar. specifically, in a linear chirp, a representative example of which is plotted in fig. 1, the instantaneous frequency f varies exactly linearly with time t: f(t) = f0 + b tc (t− t0) = f0 + s(t− t0) , (1) where f0 is the starting frequency at time point t = t0, while s = b/tc is the rate of frequency change or the frequency slope, sometimes also referred to as the chirpyness. the slope is defined using two parameters, namely the chirp bandwidth b and its duration tc, also called the modulation time. on range-doppler estimation in integrated fmcw radar sensors 505 since the time derivative of the phase φ is the angular frequency, the corresponding time-domain function for the phase of any oscillating signal is the integral of the frequency function, and therefore the phase is expected to grow like φ(t+∆t) � φ(t) + 2πf(t)∆t as a function of time. this results in: φ(t) = φ0 + 2π ∫ t t0 f(τ) dτ = φ0 + 2π [ f0 (t− t0) + b 2tc (t2 − t0 2) ] , (2) where φ0 is the initial phase at time point t = t0. deriving the previous expression it can be verified that φ′(t) = 2πf(t), what was actually expected. finally, the corresponding time-domain function for a sinusoidal linear chirp is the sine of the quadratic-phase signal in radians and can be written: yc(t) = vtx(t) = ac sin ( φ0 + 2πf0t+ π b tc (t−mtc) 2 ) , (3) where ac is the chirp’s amplitude and where t0 = 0 under assumptions that the sweeps are performed continuously and that m represents the mth chirp. the carrier frequency can be defined in terms of the starting frequency and the modulation bandwidth as fc = f0 + b/2 and represents the central frequency for the spectrum band that is being covered. typical frequency bands of interest in the mm-wave part are around 64 ghz for unlicensed and 79 ghz for automotive applications. bandwidth spans depend on targeted radar range resolution but are in the order of up to several ghz, while chirp modulation times vary from dozens of microseconds up to a millisecond. 2.1 sawtooth versus triangular wave linear chirps in the recent past, triangle (concatenation of up-chirp and down-chirp) slow fmcw modulation waveforms with typical chirp durations in the millisecond range were dominant. as it will be seen in the next section, the resulting output frequency of an fmcw radar is concurrently influenced by the target’s range and its relative radial velocity, thus estimating both parameters simultaneously from a single linear chirp/sweep is an unresolvable task. by using up-slope and down-slope chirps which produce slightly different beat frequencies for an object in motion the two parameters can be decoupled. however, this procedure suffers from ambiguity when there are multiple moving objects and the ghost targets that will appear must be identified and discarded. in contrast to this, fast sawtooth fmcw modulations which typically last up to a hundred of microseconds automatically resolve object range and velocity into a 2-d image and are in exclusive focus for the rest of the paper. 550 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 551 506 v. milovanović dsp adc synthesizerf t if pa lna tx rx fig. 2. simplified high-level block diagram of a typical homodyne fmcw radar which includes linear chirp synthesizer that is being transmitted and used as the local oscillator. 3 the operating principles of homodyne fmcw radars an fmcw radar transmits a chirp signal defined more closely in the previous section and captures its reflections from objects located in the propagation path. a high-level simplified block diagram of a homodyne fmcw radar is shown in fig. 2 and features a single transmitter (tx) and a single receiver (rx) antenna. the radar’s general operating principles are the following: • an fmcw synthesizer generates an appropriate chirp signal; • the generated chirp is first amplified by a power amplifier (pa); • after amplification the chirp is transmitted by a transmit antenna; • chirps reflected back from objects are captured by the receive antenna; • the received signal is then passed through a low-noise amplifier (lna); • a down-conversion frequency mixer combines the rx and tx signals at its inputs to produce an intermediate frequency signal at its output; • the intermediate frequency (if) signal is also referred to as the beat frequency and it contains information on the irradiated objects/targets. additionally, it should be noted that not only the instantaneous output frequency of the down-conversion mixer at any point in time will correspond to the difference of the instantaneous frequencies of the two input signals at that particular point in time, but also the initial phase of the output signal will be equal to the difference between initial phases of the two input signals. 552 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 553 506 v. milovanović dsp adc synthesizerf t if pa lna tx rx fig. 2. simplified high-level block diagram of a typical homodyne fmcw radar which includes linear chirp synthesizer that is being transmitted and used as the local oscillator. 3 the operating principles of homodyne fmcw radars an fmcw radar transmits a chirp signal defined more closely in the previous section and captures its reflections from objects located in the propagation path. a high-level simplified block diagram of a homodyne fmcw radar is shown in fig. 2 and features a single transmitter (tx) and a single receiver (rx) antenna. the radar’s general operating principles are the following: • an fmcw synthesizer generates an appropriate chirp signal; • the generated chirp is first amplified by a power amplifier (pa); • after amplification the chirp is transmitted by a transmit antenna; • chirps reflected back from objects are captured by the receive antenna; • the received signal is then passed through a low-noise amplifier (lna); • a down-conversion frequency mixer combines the rx and tx signals at its inputs to produce an intermediate frequency signal at its output; • the intermediate frequency (if) signal is also referred to as the beat frequency and it contains information on the irradiated objects/targets. additionally, it should be noted that not only the instantaneous output frequency of the down-conversion mixer at any point in time will correspond to the difference of the instantaneous frequencies of the two input signals at that particular point in time, but also the initial phase of the output signal will be equal to the difference between initial phases of the two input signals. on range-doppler estimation in integrated fmcw radar sensors 507 f t f0 f0 + b t0 t0 + tc t0 + 2tc tx rx1rx2rx3 fb3 fb2 fb1 target 1 target 2 target 3 (a) (b) (c) ffb1 fb2 fb3 a r r r roc tx rx fb3fb2fb1 2r c rf if fb = 2b ctc · r fig. 3. static multitarget detection with an fmcw radar (a) spatial object positioning, (b) time-domain transmitted and received reflected up-chirps with the corresponding mixing products (c) amplitude spectrum of appropriately windowed intermediate frequency signal. it is crucial to remark that the received chirp reflected from a single object is actually just a time-delayed replica of the transmitted chirp. this is best illustrated in fig. 3 for a somewhat more complicated case of three objects. since the mixing product will be the difference of between the instantaneous input frequencies, and since the rf mixer input is just the delayed version of the local oscillator (lo) signal that is being transmitted, hence in the ideal case the if signal will possess the fixed frequency component proportional to the reflected signal delay. the delay between the transmitted and the received chirp is equal to the round-trip delay 2r/c, where r denotes the distance between the radar and the object, and c is the speed of light, while the constant of proportionality will be the transmitted chirp’s slope s. as a consequence every object that is irradiated by the radar will produce a constant frequency component in the if signal with the value of 2rs/c. 552 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 553 508 v. milovanović for the case of a simple stationary or quasi-stationary scene, relation between the beat frequency tone fb and the object’s range can be related as: fb = 2rs c = 2b ctc · r ⇐⇒ r = cfb 2s = ctc 2b · fb , (4) where chirp slope s = b/tc and any radar or object movement is negligible. previous statements mean that a single transmitted chirp when reflected from multiple objects located at different distances in front of a radar will also imply multiple received chirps each delayed by a different amount depending on the distance to that particular object. therefore, the produced if signal will be composed of several tones that correspond to each of the reflections and the frequency of each is directly proportional to the range of that object. the initial phase of every component in the if signal will also be the difference between the phase of the tx chirp and the phase of the rx chirp at the time instant corresponding to the start of the if signal, or more precisely, to the start of that particular frequency component of the if signal. it is important to note that the if signal is only valid from the time the reflected signal is received at the rx antenna until the end of the current tx chirp. so in order to digitize the if signal using an adc, it should be assured that sampling begins after 2r/c time has elapsed after the beginning of the tx chirp, and only up to the time where the tx signal is present. in practical implementations the round-trip delay is typically just a small fraction of the total chirp duration tc, thus the nonoverlapping segment of the transmitted chirp is usually negligible. for example, for an object that is r = 150m away from the radar and the chirp modulation time of tc = 20µs, this delay accounts only for approximately 5% of the total sweep duration. 3.1 target distance estimation and radar range resolution in a quasi-stationary scene, radial object velocities with respect to a radar are negligible and, as explained, if such a scene is composed out of multiple targets, the produced if signal will contain multiple frequency components. in other words, the frequency spectrum of such if signal will reveal multiple tones, the frequency of each being proportional to the distance between each object and the radar. if two objects are closer to each other, or at least at the similar distance from the radar, their tones in the if signal are also closer. certainly the most natural and one of the most popular methods of processing the if signal is the fourier transform. it is generally known that longer observation periods yield better frequency resolution so that, for ex554 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 555 508 v. milovanović for the case of a simple stationary or quasi-stationary scene, relation between the beat frequency tone fb and the object’s range can be related as: fb = 2rs c = 2b ctc · r ⇐⇒ r = cfb 2s = ctc 2b · fb , (4) where chirp slope s = b/tc and any radar or object movement is negligible. previous statements mean that a single transmitted chirp when reflected from multiple objects located at different distances in front of a radar will also imply multiple received chirps each delayed by a different amount depending on the distance to that particular object. therefore, the produced if signal will be composed of several tones that correspond to each of the reflections and the frequency of each is directly proportional to the range of that object. the initial phase of every component in the if signal will also be the difference between the phase of the tx chirp and the phase of the rx chirp at the time instant corresponding to the start of the if signal, or more precisely, to the start of that particular frequency component of the if signal. it is important to note that the if signal is only valid from the time the reflected signal is received at the rx antenna until the end of the current tx chirp. so in order to digitize the if signal using an adc, it should be assured that sampling begins after 2r/c time has elapsed after the beginning of the tx chirp, and only up to the time where the tx signal is present. in practical implementations the round-trip delay is typically just a small fraction of the total chirp duration tc, thus the nonoverlapping segment of the transmitted chirp is usually negligible. for example, for an object that is r = 150m away from the radar and the chirp modulation time of tc = 20µs, this delay accounts only for approximately 5% of the total sweep duration. 3.1 target distance estimation and radar range resolution in a quasi-stationary scene, radial object velocities with respect to a radar are negligible and, as explained, if such a scene is composed out of multiple targets, the produced if signal will contain multiple frequency components. in other words, the frequency spectrum of such if signal will reveal multiple tones, the frequency of each being proportional to the distance between each object and the radar. if two objects are closer to each other, or at least at the similar distance from the radar, their tones in the if signal are also closer. certainly the most natural and one of the most popular methods of processing the if signal is the fourier transform. it is generally known that longer observation periods yield better frequency resolution so that, for exon range-doppler estimation in integrated fmcw radar sensors 509 ample, an observation window of t seconds in length can independently resolve frequency components that are separated by at least 1/t hertz. one of the most important properties of every radar is its range resolution, which refers to the radar’s ability to resolve two closely spaced objects. more precisely, it determines the minimum spacing between the two objects which still show up as two separate frequency peaks the if signal spectrum. obviously, one way to improve the range resolution of a radar is to extend the observation window, which looking at fig. 3 further implies increasing the chirp duration and consequently its bandwidth, if the slope is preserved. analytically, two or more distinct if signal tones can be resolved as long as ∆f > 1/tc, where the small portion at the beginning of the chirp which is associated by the round-trip delay is discarded. it is known that two objects that are spatially ∆r apart produce tones separated by ∆f = 2∆rs/c apart. eliminating ∆f from the previous two expressions and having in mind that the slope s = b/tc, the expression for radar’s range resolution is obtained: ∆r > c 2stc =⇒ ∆r > c 2b , (5) which exclusively depends on the chirp bandwidth b. thus, an fmcw radar with a chirp bandwidth of 5 ghz can have a range resolution of 3 cm at least. although from fourier transform properties it may intuitively seem that for the fixed bandwidth b, chirps of higher duration tc would imply longer if observation windows and better resolving capabilities, the if signal tones will also be lower in frequency, because of a less steep chirp, and therefore more densely grouped, hence being proportionally harder to differentiate. besides range resolution another important parameter is the maximum range of a radar. as high-level block diagram of fig. 2 indicates, the if signal is usually filtered and digitized by an analog-to-digital converter (adc) for further postprocessing inside the following digital signal processing (dsp) chain. so, the maximum detectable distance of a radar rmax will produce a tone of frequency 2rmaxs/c and the adc’s sampling rate should be at least twice as high in order to appropriately discretize this (real) baseband signal. viewed the other way around, for the adc’s maximum sampling rate of fs the maximum distance that an fmcw radar can see is determined by: rmax = cfs 4s = ctcfs 4b = cn 4b , (6) which follows directly from the sampling theorem for a bandlimited if signal. consequently, if it turns out that the adc’s sampling rate presents a bottleneck, the maximum detectable range can always be traded for chirp’s slope. 554 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 555 510 v. milovanović typically, radars tend to use lower chirp slopes for larger maximum range. also, n denotes the number of adc samples per chirp. the discrete nature of the sampled if signal suggests the use of discrete fourier transform (dft) for further postprocessing. the actual algorithm which is employed is the fast fourier transform (fft). since this processing operation resolves objects in range, it is commonly referred to as the “range-fft” in radar literature. it seems appropriate to stress one of the most important benefits of fmcw radars which is also observable from fig. 3 and that is the difference between the rf bandwidth and the if bandwidth. specifically, the rf bandwidth is the frequency range from f0 up to f0+b which is spanned by the chirp and it directly translates to better range resolution. the typical rf bandwidths are in the order of a few hundred megahertz up to several gigahertz. on the other hand, higher if bandwidth primarily enables the fmcw radar to see at larger distances and enables faster/steeper chirps. the if bandwidths are typically in the order of megahertz up to a dozen of megahertz. hence, the uniqueness of fmcw radar sensors is that huge rf bandwidths do not imply nor necessitate extremely fast data converters. 3.2 radial velocity estimation and radar velocity resolution for the nonstationary case in which there are nonnegligible object or radar movements, all distance measurements through round-trip delay are going to be affected by either signal compression or elongation depending on whether the object is moving away or towards the radar. this effective frequency shift due to relative movement is caused by the well-known doppler effect. small spatial displacements of an object ∆d will have an effect on both the if signal’s frequency and its phase. in mm-wave radars, small displacements are the ones that are comparable to the wavelength which is in the order of several millimeters for typical radar bands. slight spatial displacements will lead to small round-trip delay changes. spatial object variation does not have an effect on the initial phase of the received rf signal, but does have on the current phase of the transmitted signal and hence also on the phase of the if signal. more formally speaking, for very small displacements the higher order terms can be neglected. furthermore, based on (2) the phase offset of the transmitted signal can be expressed in terms of small displacements as ∆φ = 2πf0∆t = 2πf0 2∆d c = 4π λ0 ·∆d , (7) where ∆t presents the round-trip delay change caused by the object’s range displacement and λ0 = c/f0 is the wavelength of the transmitted rf signal. 556 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 557 510 v. milovanović typically, radars tend to use lower chirp slopes for larger maximum range. also, n denotes the number of adc samples per chirp. the discrete nature of the sampled if signal suggests the use of discrete fourier transform (dft) for further postprocessing. the actual algorithm which is employed is the fast fourier transform (fft). since this processing operation resolves objects in range, it is commonly referred to as the “range-fft” in radar literature. it seems appropriate to stress one of the most important benefits of fmcw radars which is also observable from fig. 3 and that is the difference between the rf bandwidth and the if bandwidth. specifically, the rf bandwidth is the frequency range from f0 up to f0+b which is spanned by the chirp and it directly translates to better range resolution. the typical rf bandwidths are in the order of a few hundred megahertz up to several gigahertz. on the other hand, higher if bandwidth primarily enables the fmcw radar to see at larger distances and enables faster/steeper chirps. the if bandwidths are typically in the order of megahertz up to a dozen of megahertz. hence, the uniqueness of fmcw radar sensors is that huge rf bandwidths do not imply nor necessitate extremely fast data converters. 3.2 radial velocity estimation and radar velocity resolution for the nonstationary case in which there are nonnegligible object or radar movements, all distance measurements through round-trip delay are going to be affected by either signal compression or elongation depending on whether the object is moving away or towards the radar. this effective frequency shift due to relative movement is caused by the well-known doppler effect. small spatial displacements of an object ∆d will have an effect on both the if signal’s frequency and its phase. in mm-wave radars, small displacements are the ones that are comparable to the wavelength which is in the order of several millimeters for typical radar bands. slight spatial displacements will lead to small round-trip delay changes. spatial object variation does not have an effect on the initial phase of the received rf signal, but does have on the current phase of the transmitted signal and hence also on the phase of the if signal. more formally speaking, for very small displacements the higher order terms can be neglected. furthermore, based on (2) the phase offset of the transmitted signal can be expressed in terms of small displacements as ∆φ = 2πf0∆t = 2πf0 2∆d c = 4π λ0 ·∆d , (7) where ∆t presents the round-trip delay change caused by the object’s range displacement and λ0 = c/f0 is the wavelength of the transmitted rf signal. on range-doppler estimation in integrated fmcw radar sensors 511 it is crucial to note that the phase of the if signal changes linearly with small displacements of the object distance and also that the phase is much more sensitive to small spatial perturbations than the actual if tone frequency. to gain a numerical sense of the previous fact, assume ∆d = λ0/4 which for typical automotive radar band is in the order of one millimeter. based on elaborations from the last subsection, every spatial object displacements that are much smaller than the radar’s range resolution, which is a few centimeters for present state of the art devices, that is ∆d � ∆r, will be practically not discernible in the frequency spectrum. on the other hand the phase changes by ∆φ = π = 180◦ for the quarter wavelength displacements. thus, the if signal’s phase is very sensitive to small changes in object range. this gives all the tools for effective velocity measurement of an object by an fmcw radar. the basic idea is to transmit two consecutive chirps of duration tc. each of the two reflected chirps is processed through fft to detect the range of the object. the range-fft corresponding to each chirp will have peak at the same location but with a different phase. the measured phase difference of two peaks corresponds to spatial motion of the object. assuming that an object with a radial velocity of v in time tc traverses ∆d = vtc, then substituting this into (7) and rearranging it, the object velocity can be directly estimated from the measured phase difference as: v = λ0 4πtc ·∆φ . (8) hence, the phase difference measured across two consecutive chirps can be exploited to estimate the velocity of a single object in front of the radar. since the phase difference measurement is unambiguous only in cases in which |∆φ < π|, the maximum unambiguously measurable velocities are: vmax = λ0 4tc . (9) this further implies that measuring higher vmax requires faster/shorter chirps. the previously described method that combines two consecutive chirps does not only work for measuring velocity of a single object, but it is also applicable to multiple objects as well, as long as they are located at different ranges from the radar. however, it will not work if multiple moving objects with different velocities are at the time of measurement all equidistantly located from the radar. this is because the range-fft of both chirps would yield a single peak whose frequency would correspond to range, but whose phase change would present a combined signal from all of these equi-range object and hence a simple phase comparison technique would not suffice. 556 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 557 512 v. milovanović f 1 2 3 m -2m -1 m traw adc samples n sa m pl es pe r ch ir p � n n -1 n -2 3 2 1 an example radar scene consists of five moving objects in total. however, only two peaks are observable after the range-fft. nevertheless, all five targets emerge after the doppler-fft. peak bins (objects) are shaded. range fft 1 2 3 m -2 m -1 m velocity � d op pl er f f t ra ng e � n n -1 n -2 3 2 1 fig. 4. two-dimensional (2-d) fft processing of an fmcw frame containing m chirps and that n samples are taken out of each chirp. the first m ×n matrix contains the raw radar data. after the first fft which is performed on each matrix column the range is resolved. the second fft performed across matrix rows resolves the doppler frequency. one way of estimating the velocities of multiple equidistant objects is to transmit a series of more than two consecutive equally spaced chirps just as fig. 4 illustrates. again, under the assumption of relatively slow motion, the range-fft corresponding to each of these chirps would yield peaks in identical frequency locations. nevertheless, the phase of each magnitude peak in 558 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 559 512 v. milovanović f 1 2 3 m -2m -1 m traw adc samples n sa m pl es pe r ch ir p � n n -1 n -2 3 2 1 an example radar scene consists of five moving objects in total. however, only two peaks are observable after the range-fft. nevertheless, all five targets emerge after the doppler-fft. peak bins (objects) are shaded. range fft 1 2 3 m -2 m -1 m velocity � d op pl er f f t ra ng e � n n -1 n -2 3 2 1 fig. 4. two-dimensional (2-d) fft processing of an fmcw frame containing m chirps and that n samples are taken out of each chirp. the first m ×n matrix contains the raw radar data. after the first fft which is performed on each matrix column the range is resolved. the second fft performed across matrix rows resolves the doppler frequency. one way of estimating the velocities of multiple equidistant objects is to transmit a series of more than two consecutive equally spaced chirps just as fig. 4 illustrates. again, under the assumption of relatively slow motion, the range-fft corresponding to each of these chirps would yield peaks in identical frequency locations. nevertheless, the phase of each magnitude peak in on range-doppler estimation in integrated fmcw radar sensors 513 the spectral domain across chirps would be different since it incorporates in itself phase contributions from all of these equidistant objects. performing yet another fft round, now across this discrete sequence of chirps would result in peaks corresponding to normalized angular frequencies of each object velocity. the obtained angular frequencies ω can be used to back-calculate the object velocities from (8) substituting ∆φ = ω, i.e., the phase difference between consecutive chirps with the discrete angular frequency. the transform that is performed across chirps is often referred to as the “doppler-fft”, while the sequence of m equispaced chirps on which it is performed is called a frame. therefore, a basic transmission unit of an fmcw radar is the frame. just as range estimation capability had its range resolution, the velocity extraction has its own resolution. analogously to range, there is a certain minimum separation between normalized angular frequencies so that they show up as two independent peaks in the doppler-fft spectrum. identically to the continuous fourier transform, the longer the dft input sequence length, better the resolution. more precisely, a sequence of m samples can resolve discrete angular frequencies that are separated by more than 2π/m radians per sample or equivalently 1/m cycles per sample, since one cycle is equal to 2π radians. so, in the continuous case, the resolution is inversely proportional to observation time t , while in the discrete case it is inversely proportional to the number of observed samples m . apparently, a way to improve the velocity resolution is to increase the number of chirps per frame. analytically, two distinct normalized angular frequencies can be resolved as long as ∆ω > 2π/m and since two velocities that are ∆v apart produce angular frequencies that are ∆ω = 4π∆vtc/λ0, eliminating ∆ω from those expressions and accounting that frame duration is given as tf = mtc, yields ∆v > λ0 2mtc =⇒ ∆v > λ0 2tf , (10) where tc is the separation between the adjacent chirps. this was an expected result having already mentioned the velocity resolution’s inverse proportionality to frame duration, or, more precisely, the number of chirps in a frame. range and velocity estimation is best summarized in fig. 4 which provides insight in transformations and data organization. samples taken from an adc corresponding to each chirp in a frame are stored as the columns of a data matrix. a range-fft performed on each column resolves objects in range. subsequently, a doppler-fft is performed along the rows of the range-fft results to resolve objects in the velocity or doppler dimension. the process of taking the range-fft followed by the doppler-fft is to558 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 559 514 v. milovanović f 1 2 3 m -2m -1 m t range fft 1 2 3 m -2 m -1 m velocity � d op pl er f f t ra ng e � n n -1 n -2 3 2 1 fig. 5. a practical implementation of an fmcw slow-time 2-d fft radar processing in which range-fft is performed on the fly as data samples for each chirp become available. gether called two-dimensional fft (2-d fft) in the fmcw [24] literature. just as illustrated in fig. 5, in practical radar dsp implementations, the range-fft is usually accomplished in line as soon as the samples from an adc for each chirp become available and prior to storing them into memory. contrary to previous, the doppler-fft can only be performed once all the range-fft output data points have become available. therefore, a radar dsp system should be equipped with sufficient amount of memory to store the complete content of all the range-fft outputs corresponding to a frame. once the 2-d fft has been performed on a complete frame, the so-called range-doppler response can be obtained. a practical example, visualized in the range-velocity grid, is shown in fig. 6, where two objects can be clearly identified as peaks that stand out from the noise floor or surrounding clutter. noise suppression near the range edges comes from the band-pass filtering. it should also be mentioned that the limitation on maximum unambiguously measurable velocity imposed by (9) can actually be extended using some higher level algorithms, but they fall beyond the scope of this article. as a final remark, the radial velocity in the above derivation is assumed to be both constant and sufficiently small so that the illuminated object does not move from one range bin to another across the duration of a single frame. 560 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 561 514 v. milovanović f 1 2 3 m -2m -1 m t range fft 1 2 3 m -2 m -1 m velocity � d op pl er f f t ra ng e � n n -1 n -2 3 2 1 fig. 5. a practical implementation of an fmcw slow-time 2-d fft radar processing in which range-fft is performed on the fly as data samples for each chirp become available. gether called two-dimensional fft (2-d fft) in the fmcw [24] literature. just as illustrated in fig. 5, in practical radar dsp implementations, the range-fft is usually accomplished in line as soon as the samples from an adc for each chirp become available and prior to storing them into memory. contrary to previous, the doppler-fft can only be performed once all the range-fft output data points have become available. therefore, a radar dsp system should be equipped with sufficient amount of memory to store the complete content of all the range-fft outputs corresponding to a frame. once the 2-d fft has been performed on a complete frame, the so-called range-doppler response can be obtained. a practical example, visualized in the range-velocity grid, is shown in fig. 6, where two objects can be clearly identified as peaks that stand out from the noise floor or surrounding clutter. noise suppression near the range edges comes from the band-pass filtering. it should also be mentioned that the limitation on maximum unambiguously measurable velocity imposed by (9) can actually be extended using some higher level algorithms, but they fall beyond the scope of this article. as a final remark, the radial velocity in the above derivation is assumed to be both constant and sufficiently small so that the illuminated object does not move from one range bin to another across the duration of a single frame. on range-doppler estimation in integrated fmcw radar sensors 515 awr1243 sensor: highly integrated 76–81-ghz radar front-end 3 may 2017 for emerging adas applications produces a beat-frequency (intermediate frequency [if] frequency) output, which is digitized and subsequently processed in a dsp. figure 1 shows the received fmcw signal, which comprises different delayed and attenuated copies of the transmitted signal corresponding to various objects. from figure 1, you can see that the beatfrequency signal corresponding to each object is a tone (ignoring the edge effects at the start and end of the chirp), whose frequency (f b ) is proportional to the distance (r) of the object from the radar. the process of detecting objects (targets) and their distances from the radar involves taking a fast fourier transform (fft) of the beat-frequency signal and identifying peaks that stand out from the noise floor. in the case of moving objects, the beat-frequency signal also has a doppler component that depends on the relative velocity between the radar and the target. looking at the phase shift of the beat signal from one chirp to the next provides an estimate of the doppler and hence the relative velocity. this is typically accomplished by performing a second fft across chirps[1]. the detection process involves performing a first-dimension fft of the received samples corresponding to each chirp and then a seconddimension fft of this output across chirps. the result of the 2-d fft procedure is an image of the target(s) in the range-velocity grid, as shown in figure 2. the detection process is often performed on this 2-d fft output and involves detecting peaks amid the noise floor or surrounding clutter. additionally, for the detected objects, an angle estimation process is performed using digital beamforming with multiple tx/rx antennas. thus, the fmcw radar can provide a 3-d image (range, relative velocity and angle of arrival) of the scene that it illuminates. for a comprehensive description of fmcw, see the citations in the references section. advantages of fast fmcw modulation the 2-d fft processing procedure is applicable to radar implementations that use fast fmcw modulation. this is in contrast to other techniques, such as triangular fmcw waveform (slow fmcw modulation). in fast (saw tooth) fmcw modulation, the chirp durations are in the order of tens of microseconds, whereas in slow (triangular) fmcw modulation, the chirp durations are much longer, typically in milliseconds. one of the key advantages of fast fmcw modulation is that the range and velocity of various objects are automatically resolved into a 2-d image. figure 2. radar 2-d fft image showing range and velocity of two point objects.fig. 6. radar 2-d fft images of the so-called range-doppler response showing range and relative speed/velocity of two point objects that stand out as peaks above the noise floor. besides object velocity estimation, measuring if signal’s phase change over multiple antennas separated in space (instead of multiple chirps separated in time) can be used to resolve angular dimension of objects. differential distance of an object to each antenna is exploited to estimate the angle of arrival. however, extracting target angle information is also not the topic. finally, in addition to measuring angle of arrival and object velocity, the fact that the phase of the if signal is very sensitive to small movements is also the basis for interesting applications such as vibration or heartbeat monitoring, among others. the only assumption is that the movements are small so that the maximum displacement of the object is in the order of a fraction of the λ0 wavelength. even though the effect on if frequency tone will be negligible, the phase of the frequency peak will exhibit some sort of a periodic behavior as a response to oscillatory movement of the object. in connection to that, the maximum phase deviation will be related to maximum object displacement providing means to extract the vibration amplitude. in a similar way, the periodicity can be estimated and thus the time evolution of the phase can yield both the amplitude and periodicity of the vibration. 3.3 radar requirement mapping to chirp and frame parameters having derived the equations that define maximum unambiguously measurable range and velocity, as well as their corresponding resolutions, it is also important to know how to exploit these to design an fmcw transmit signal that meets certain end-user requirements. assuming the specifications for range resolution (∆r), maximum range (rmax), velocity resolution (∆v) and maximum velocity (vmax) are given and dictated by a certain application, there are multiple strategies how to map this set of requirements to chirp and frame parameters. a sketch of one possible design method is as follows: 560 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 561 516 v. milovanović • the carrier frequency/wavelength is determined by the frequency band • chirp bandwidth is directly dictated by b = c/2∆r the range resolution • inter-chirp time is only ruled by tc = λ0/4vmax the maximum velocity • since both b and tc are fixed, the chirp slope s = b/tc is also locked • the frame duration is governed by tf = λ0/2∆v the velocity resolution • finally, it is assumed that the data converter’s sampling rate is sufficiently high fs = 4srmax/c to support if signal bandwidth of 2srmax/c. however, in practice the process of arriving at desired chirp and frame parameters might involve several iterations, simply because the fmcw radar sensor could have some additional constraints that were not addressed so far. for example, the maximum if bandwidth could exceed the adc’s sampling frequency. in such cases, a trade-off between the chirp slope and the maximum measurable distance might be needed. therefore, in order to increase rmax the chirp slope would have to be decreased. on the other hand if the modulation time tc is frozen based on vmax, a lower modulation rate s directly translates to worse range resolution. so, basically, for the fixed modulation time, a short-range radar has a steeper chirp slope and consequently a larger chirp bandwidth and better range resolution, while long-range radar has a lower slope and thereupon a smaller bandwidth and poorer resolution. besides the mentioned maximum sampling frequency, other device limitations that are in connection with either analog front-end or digital back-end are often present. for example, there is always a certain maximum slope an fmcw synthesizer can generate. also related to that, due to a finite settling period, usually a device-specific requirements for idle time between adjacent chirps need to be honored. on the back-end side, the device must have sufficient memory to store the range-fft output data for all the chirps in the frame to respect a request imposed by the doppler-fft on data availability. 4 contemporary mm-wave fmcw radar sensor examples contrary to communication systems where wireless signal receivers are more complicated than their transmitter counterparts, this is not the case with fmcw radar sensors where tx needs to satisfy stringent chirp generation requirements. namely, although they were not elaborated in the previous sections, object detection quality of fmcw-based sensors will depend on many nonideal effects, such as chirp nonlinearity or synthesizer phase noise. 562 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 563 516 v. milovanović • the carrier frequency/wavelength is determined by the frequency band • chirp bandwidth is directly dictated by b = c/2∆r the range resolution • inter-chirp time is only ruled by tc = λ0/4vmax the maximum velocity • since both b and tc are fixed, the chirp slope s = b/tc is also locked • the frame duration is governed by tf = λ0/2∆v the velocity resolution • finally, it is assumed that the data converter’s sampling rate is sufficiently high fs = 4srmax/c to support if signal bandwidth of 2srmax/c. however, in practice the process of arriving at desired chirp and frame parameters might involve several iterations, simply because the fmcw radar sensor could have some additional constraints that were not addressed so far. for example, the maximum if bandwidth could exceed the adc’s sampling frequency. in such cases, a trade-off between the chirp slope and the maximum measurable distance might be needed. therefore, in order to increase rmax the chirp slope would have to be decreased. on the other hand if the modulation time tc is frozen based on vmax, a lower modulation rate s directly translates to worse range resolution. so, basically, for the fixed modulation time, a short-range radar has a steeper chirp slope and consequently a larger chirp bandwidth and better range resolution, while long-range radar has a lower slope and thereupon a smaller bandwidth and poorer resolution. besides the mentioned maximum sampling frequency, other device limitations that are in connection with either analog front-end or digital back-end are often present. for example, there is always a certain maximum slope an fmcw synthesizer can generate. also related to that, due to a finite settling period, usually a device-specific requirements for idle time between adjacent chirps need to be honored. on the back-end side, the device must have sufficient memory to store the range-fft output data for all the chirps in the frame to respect a request imposed by the doppler-fft on data availability. 4 contemporary mm-wave fmcw radar sensor examples contrary to communication systems where wireless signal receivers are more complicated than their transmitter counterparts, this is not the case with fmcw radar sensors where tx needs to satisfy stringent chirp generation requirements. namely, although they were not elaborated in the previous sections, object detection quality of fmcw-based sensors will depend on many nonideal effects, such as chirp nonlinearity or synthesizer phase noise. on range-doppler estimation in integrated fmcw radar sensors 517 vga lna baseband rx tx target r tof = 2r c 0◦/90◦ rf front end dsp mcu osc t f spi slave fmcw generator fb analog pa roc adc pll fig. 7. a contemporary fully-integrated fmcw radar-on-chip (roc) sensor solution which consists of a single transmitter (tx) and single receiver (rx) antenna and processing chain. a simplified block diagram of a modern monolithic fmcw radar-onchip (roc) sensor is shown in fig. 7 which sketches its main components. it consists of two major functional blocks: (i) the rf sensor front end containing antennas, signal creation and transmission, signal reception and conditioning and analog-to-digital sampling and conversion, and (ii) digital back end which converts time-domain samples into frequency information, identifies targets and calculates their distances, relative radial velocities, angles and can even perform some advanced functions like target classification or object tracking. in the mm-wave bands of interest, antennas are mostly realized as patch or dipole antennas on printed-circuit board (pcb) due to their dimensions. 4.1 fmcw radar transmitters the key components of fmcw transmitters are the fmcw synthesizers. they synthesize transmitted radar signal and provide desired modulation schemes. the most important signal conditioning parameters are transmitter phase noise and generated chirp nonlinearity and both have a profound effect on extracting relevant target information from background clutter and noise. a common block in vast majority of fmcw synthesizers is the oscillator. integrated voltage-controlled (vcos) and digitally-controlled oscillators (dcos) [13] in cmos and bicmos technologies are generally nonlinear with respect to the input control signal due to nonlinear varactor devices [18] which are used in resonators as the frequency control elements. accordingly, 562 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 563 518 v. milovanović the biggest issue in an fmcw synthesizer is the compensation of inherent nonlinearity of the dco/vco frequency tuning curve. various methods for fmcw signal generation are proposed so far, each with its own advantages and disadvantages. the most intuitive method is based on the open-loop oscillator, in which the compensation of its nonlinearity is achieved via a lookup table (lut) and a digital-to-analog converter (dac). a drawback of this method is the frequency drift with temperature or supply voltage variations which demands periodical updating of the lut. apart from aforementioned variations, large effect on the oscillator frequency have unwanted load fluctuations and disturbances which cannot be compensated. therefore, oscillator nonlinearity is often compensated in the closed-loop systems such as plls. in feedback loop based fmcw synthesizers, dominated by phase-locked loop (pll) systems, the carrier frequency can be modulated by directly imposing the control signal of a vco, by modulating the reference frequency of an integer-n pll [5] or by using fractional-n pll to change the feedback frequency divider ratio [10–15] hence producing the modulation. advantages of direct vco modulation is a simple circuit structure and the absence of additional noise sources. on the other hand, direct vco modulation requires at least an order of magnitude smaller loop bandwidth in comparison to the modulation frequency which results in a very low filter cross-over frequency, impractical for integration. a method of modulating the reference frequency of integer-n pll, also known as direct digital frequency synthesis (ddfs), employs lut and dac to convert digital word representing phase to analog voltage. the use of dac constitutes the main disadvantage of this method, because the nonlinearity of the characteristic line, the settling time, the finite slew rate and the jitter coming from the dac result in spurious signals and serious phase noise performance degradation at the output of the fmcw synthesizer. probably the most suitable method for fmcw signal generation is based on fractional-n plls [25]. this method does not require a low noise dac nor a lut, and it provides highly linear frequency sweeps. thus, it is widely adopted in contemporary integrated fmcw radar sensor modules. various frequency synthesizer architectures based on fractional-n plls have been reported. they include: a pll with the fundamental frequency vco or dco [5,10,12,13,26], a pll with a push-push vco [27], a pll and a frequency multiplier [14,16,28–30], and a pll tied with an injection-locked oscillator [31]. each of these oscillator architectures and methods have their own pros and cons which are summarized in [26]. the choice of the actual synthesizer architecture mainly depends on the required pll phase noise and output amplitude, but also on the process technology that is being used. 564 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 565 518 v. milovanović the biggest issue in an fmcw synthesizer is the compensation of inherent nonlinearity of the dco/vco frequency tuning curve. various methods for fmcw signal generation are proposed so far, each with its own advantages and disadvantages. the most intuitive method is based on the open-loop oscillator, in which the compensation of its nonlinearity is achieved via a lookup table (lut) and a digital-to-analog converter (dac). a drawback of this method is the frequency drift with temperature or supply voltage variations which demands periodical updating of the lut. apart from aforementioned variations, large effect on the oscillator frequency have unwanted load fluctuations and disturbances which cannot be compensated. therefore, oscillator nonlinearity is often compensated in the closed-loop systems such as plls. in feedback loop based fmcw synthesizers, dominated by phase-locked loop (pll) systems, the carrier frequency can be modulated by directly imposing the control signal of a vco, by modulating the reference frequency of an integer-n pll [5] or by using fractional-n pll to change the feedback frequency divider ratio [10–15] hence producing the modulation. advantages of direct vco modulation is a simple circuit structure and the absence of additional noise sources. on the other hand, direct vco modulation requires at least an order of magnitude smaller loop bandwidth in comparison to the modulation frequency which results in a very low filter cross-over frequency, impractical for integration. a method of modulating the reference frequency of integer-n pll, also known as direct digital frequency synthesis (ddfs), employs lut and dac to convert digital word representing phase to analog voltage. the use of dac constitutes the main disadvantage of this method, because the nonlinearity of the characteristic line, the settling time, the finite slew rate and the jitter coming from the dac result in spurious signals and serious phase noise performance degradation at the output of the fmcw synthesizer. probably the most suitable method for fmcw signal generation is based on fractional-n plls [25]. this method does not require a low noise dac nor a lut, and it provides highly linear frequency sweeps. thus, it is widely adopted in contemporary integrated fmcw radar sensor modules. various frequency synthesizer architectures based on fractional-n plls have been reported. they include: a pll with the fundamental frequency vco or dco [5,10,12,13,26], a pll with a push-push vco [27], a pll and a frequency multiplier [14,16,28–30], and a pll tied with an injection-locked oscillator [31]. each of these oscillator architectures and methods have their own pros and cons which are summarized in [26]. the choice of the actual synthesizer architecture mainly depends on the required pll phase noise and output amplitude, but also on the process technology that is being used. on range-doppler estimation in integrated fmcw radar sensors 519 a recent example of an fmcw synthesizer packed in the complete transmitter module [32] provides, in a reasonable modulation time window an extremely large chirp bandwidth of more than 10 ghz thus enabling unmatched range resolutions that are better than 1.5 cm. it is intended to serve as a ubiquitous short-distance radar solution that operates in the unlicensed spectrum band around 65 ghz and to compete in diverse fields of demanding consumer products, like emerging gesture sensors, but also in industrial applications. even though at first glance it might seem counterintuitive, excluding the transceiver chain, in particular low-noise and power amplifiers, the shortrange radars (srrs) are actually more challenging to design than the longrange ones. a dominant source of difficulties in srrs arise due to a limited time frame associated with targets in close proximity to the radar. specifically, as can be deduced from fig. 3, for a fixed modulation slope, lower beat frequencies will correspond to objects located at smaller radii. therefore, it is generally beneficial to decrease the modulation time without compromising the bandwidth in order to push the beat notes of closer targets away from the flicker noise corner frequency. this in turn increases the signal-to-noise ratio (snr), and consequently the measurement threshold of weaker objects. nonlinearity, manifested as an instantaneous frequency deviation from the ideal chirp, disturbs the beat tone and thereby deteriorates radar’s measurement accuracy and precision. even though, faster chirps of high bandwidth, i.e., steeper, are more prone [30] to nonlinear frequency excursions, the above mentioned [32] state-of-the-art radar transmitter is able to achieve the superb frequency sweep linearity under acceptable phase noise levels. generally speaking, the use of a closed-loop pll enables the generation of highly linear chirps which avoid smearing of the fft peaks thus gaining the full benefits of unmatched range resolution associated with high rf bandwidth. although a wide rf bandwidth improves radar’s range resolution it can typically lead to a longer chirp duration which as a result has a limited maximum unambiguous velocity due to undersampling of the doppler frequency shift. hence, supporting steeper chirps, i.e., higher frequency ramp slopes, is essential to achieve higher range resolutions without compromising the maximum velocity. as a side advantage of previous, a wider if bandwidth relaxes the design of analog baseband filters (moderate roll-off), but requires higher analog-to-digital converter (adc) sampling rates to achieve equal maximum detectable distances. another subtle, but also a substantial advantage of steeper modulation slopes is illustrated in fig. 8, just for the case of triangular chirps, and relates to the fact that spatially equidistant targets yield more separate tones within the beat-frequency domain. thus, the noise skirt 564 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 565 520 v. milovanović { f t f0 f0 + b t0 + tct0 (b) (c) ffb1 fb1 fb2 a fb2 fb2 fb1 target 1 target 2 roc (a) r dtx rx s3 s2 s1 s3 s2 s1 fb1 fb2 rf only tx r � d fig. 8. effect of the modulation slope s on the beat frequency separation in static multitarget detection scenarios (a) spatial object positioning, (b) time-domain transmitted fmcw triangular chirps, (c) if amplitude spectrum for three different modulation rates. from one target produces less interference in the detection of nearby objects. for stationary targets previous statements can analytically be expressed as: fb2 − fb1 = 2b ctc · (r + d)− 2b ctc · r = 2b ctc · d = 2 c · s · d , (11) where d is the radial distance between targets with respect to the radar. because of all the mentioned reasons it is important to simultaneously increase the rf bandwidth and reduce the modulation time, thus supporting steeper slopes. to achieve that, many technical challenges have to be tackled. 4.2 fmcw radar receivers although just as important as the transmitter, due to higher similarity to wireless communication transceivers, less attention is devoted to the receiver. in the simple homodyne implementation, the fmcw receiver is just a plain direct-conversion radio receiver where the modulated signal is frequency 566 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 567 520 v. milovanović { f t f0 f0 + b t0 + tct0 (b) (c) ffb1 fb1 fb2 a fb2 fb2 fb1 target 1 target 2 roc (a) r dtx rx s3 s2 s1 s3 s2 s1 fb1 fb2 rf only tx r � d fig. 8. effect of the modulation slope s on the beat frequency separation in static multitarget detection scenarios (a) spatial object positioning, (b) time-domain transmitted fmcw triangular chirps, (c) if amplitude spectrum for three different modulation rates. from one target produces less interference in the detection of nearby objects. for stationary targets previous statements can analytically be expressed as: fb2 − fb1 = 2b ctc · (r + d)− 2b ctc · r = 2b ctc · d = 2 c · s · d , (11) where d is the radial distance between targets with respect to the radar. because of all the mentioned reasons it is important to simultaneously increase the rf bandwidth and reduce the modulation time, thus supporting steeper slopes. to achieve that, many technical challenges have to be tackled. 4.2 fmcw radar receivers although just as important as the transmitter, due to higher similarity to wireless communication transceivers, less attention is devoted to the receiver. in the simple homodyne implementation, the fmcw receiver is just a plain direct-conversion radio receiver where the modulated signal is frequency on range-doppler estimation in integrated fmcw radar sensors 521 translated in a single conversion step. this avoids additional complexity, but also since the tx and rx frequencies differ yields some properties much alike superheterodyne receiver, e.g., instead of zero the if is sufficiently large. some additional simplifications in terms of lo injection are present, too. namely, in case of an up-chirp sawtooth modulation the high-side injection is present, while in the case of down-chirp sawtooth modulation the low-side injection applies. for the case of a triangular modulation, both high-side and low-side injection apply to rising and falling frequency slopes, respectively. even though the transmitter signal energy can leak through the mixer and then reflect back to create a self-mixing dc offset, the baseband processing chain usually starts with the high-pass filter to alleviate for this effect. finally, leading edge fmcw radar sensors adopt the complex baseband receiver architecture which uses quadrature mixers with complex if and adc chains that include both in-phase (i) and quadrature (q) channels. this so-called iq baseband architecture brings several advantages but the most straightforward one seem to be better noise figure performance (up to 3 db in theory) because the image band noise foldback to in-band is eliminated. other benefits include reduced impact of rf intermodulation products due to receiver’s nonlinearity combined with the presence of strong tx-to-rx antenna coupling and spillover or very near objects like, e.g., a car bumper. 5 conclusions an introduction to radar systems that adopt frequency-modulated continuous waves, or fmcw, to measure range and velocity of remote objects has been made in this article. it has been explained that the received fmcw signal from the remote objects comprises of different time delayed and frequency shifted copies of transmitted chirp signals. an elaborate analysis on how the received signal can be processed in order to obtain the useful information has been performed and the fundamental operating principles of fmcw radars was discussed. some basic limitations in terms of resolution and maximum measurable distance and speed were shown. finally, the examples of recent cutting-edge integrated fmcw radar transceiver implementations are given. since the focus was on the most simple siso radar sensors, angle-of-arrival estimation, beamforming and mimo radar techniques were omitted. also, the so-called radar range equation which is a kind of a link budget for radars, as well as range precision and accuracy were not covered because depending on the actual algorithm it may vary from centimeters down to micrometers. in spite of that, a good head start in the fmcw topic is hopefully provided. 566 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 567 522 v. milovanović acknowledgements the author would like to thank the colleagues from novelic microsystems and faculty of engineering, university of kragujevac on helpful discussions. he would also like to acknowledge support granted by the ministry of education, science and technological development through the iii-41007 project. references [1] j. hasch, e. topak, r. schnabel, t. zwick, r. weigel, and c. waldschmidt, “millimeter-wave technology for automotive radar sensors in the 77 ghz frequency band,” ieee trans. microw. theory techn., vol. 60, no. 3, pp. 845–860, mar. 2012. [2] c. li, z. peng, t. y. huang, t. fan, f. k. wang, t. s. horng, j. m. muñozferreras, r. gómez-garcía, l. ran, and j. lin, “a review on recent progress of portable short-range noncontact microwave radar systems,” ieee trans. microw. theory techn., vol. 65, no. 5, pp. 1692–1706, may 2017. [3] m. pauli, b. göttel, s. scherr, a. bhutani, s. ayhan, w. winkler, and t. zwick, “miniaturized millimeter-wave radar sensor for high-accuracy applications,” ieee trans. microw. theory techn., vol. 65, no. 5, pp. 1707–1715, may 2017. [4] l. yujiri, m. shoucri, and p. moffa, “passive millimeter wave imaging,” ieee microw. mag., vol. 4, no. 3, pp. 39–50, sep. 2003. [5] t. mitomo, n. ono, h. hoshino, y. yoshihara, o. watanabe, and i. seto, “a 77 ghz 90 nm cmos transceiver for fmcw radar applications,” ieee j. solid-state circuits, vol. 45, no. 4, pp. 928–937, apr. 2010. [6] m. skolnik, introduction to radar systems, 3rd ed. mcgraw-hill, 2002. [7] s. trotta, h. knapp, d. dibra, k. aufinger, t. f. meister, j. bock, w. simburger, and a. l. scholtz, “a 79ghz sige-bipolar spread-spectrum tx for automotive radar,” in ieee int. solid-state circuits conf. (isscc) dig. tech. papers, feb. 2007, pp. 430–613. [8] d. guermandi, q. shi, a. dewilde, v. derudder, u. ahmad, a. spagnolo, i. ocket, a. bourdoux, p. wambacq, j. craninckx, and w. v. thillo, “a 79ghz 2 × 2 mimo pmcw radar soc in 28-nm cmos,” ieee j. solid-state circuits, vol. 52, no. 10, pp. 2613–2626, oct. 2017. [9] w. v. thillo, v. giannini, d. guermandi, s. brebels, and a. bourdoux, “impact of adc clipping and quantization on phase-modulated 79 ghz cmos radar,” in 2014 11th eur. radar conf. (eurad), oct. 2014, pp. 285–288. [10] j. lee, y. a. li, m. h. hung, and s. j. huang, “a fully-integrated 77-ghz fmcw radar transceiver in 65-nm cmos technology,” ieee j. solid-state circuits, vol. 45, no. 12, pp. 2746–2756, dec. 2010. 568 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 569 522 v. milovanović acknowledgements the author would like to thank the colleagues from novelic microsystems and faculty of engineering, university of kragujevac on helpful discussions. he would also like to acknowledge support granted by the ministry of education, science and technological development through the iii-41007 project. references [1] j. hasch, e. topak, r. schnabel, t. zwick, r. weigel, and c. waldschmidt, “millimeter-wave technology for automotive radar sensors in the 77 ghz frequency band,” ieee trans. microw. theory techn., vol. 60, no. 3, pp. 845–860, mar. 2012. [2] c. li, z. peng, t. y. huang, t. fan, f. k. wang, t. s. horng, j. m. muñozferreras, r. gómez-garcía, l. ran, and j. lin, “a review on recent progress of portable short-range noncontact microwave radar systems,” ieee trans. microw. theory techn., vol. 65, no. 5, pp. 1692–1706, may 2017. [3] m. pauli, b. göttel, s. scherr, a. bhutani, s. ayhan, w. winkler, and t. zwick, “miniaturized millimeter-wave radar sensor for high-accuracy applications,” ieee trans. microw. theory techn., vol. 65, no. 5, pp. 1707–1715, may 2017. [4] l. yujiri, m. shoucri, and p. moffa, “passive millimeter wave imaging,” ieee microw. mag., vol. 4, no. 3, pp. 39–50, sep. 2003. [5] t. mitomo, n. ono, h. hoshino, y. yoshihara, o. watanabe, and i. seto, “a 77 ghz 90 nm cmos transceiver for fmcw radar applications,” ieee j. solid-state circuits, vol. 45, no. 4, pp. 928–937, apr. 2010. [6] m. skolnik, introduction to radar systems, 3rd ed. mcgraw-hill, 2002. [7] s. trotta, h. knapp, d. dibra, k. aufinger, t. f. meister, j. bock, w. simburger, and a. l. scholtz, “a 79ghz sige-bipolar spread-spectrum tx for automotive radar,” in ieee int. solid-state circuits conf. (isscc) dig. tech. papers, feb. 2007, pp. 430–613. [8] d. guermandi, q. shi, a. dewilde, v. derudder, u. ahmad, a. spagnolo, i. ocket, a. bourdoux, p. wambacq, j. craninckx, and w. v. thillo, “a 79ghz 2 × 2 mimo pmcw radar soc in 28-nm cmos,” ieee j. solid-state circuits, vol. 52, no. 10, pp. 2613–2626, oct. 2017. [9] w. v. thillo, v. giannini, d. guermandi, s. brebels, and a. bourdoux, “impact of adc clipping and quantization on phase-modulated 79 ghz cmos radar,” in 2014 11th eur. radar conf. (eurad), oct. 2014, pp. 285–288. [10] j. lee, y. a. li, m. h. hung, and s. j. huang, “a fully-integrated 77-ghz fmcw radar transceiver in 65-nm cmos technology,” ieee j. solid-state circuits, vol. 45, no. 12, pp. 2746–2756, dec. 2010. on range-doppler estimation in integrated fmcw radar sensors 523 [11] n. pohl, t. jaeschke, and k. aufinger, “an ultra-wideband 80ghz fmcw radar system using a sige bipolar transceiver chip stabilized by a fractionaln pll synthesizer,” ieee trans. microw. theory techn., vol. 60, no. 3, pp. 757–765, mar. 2012. [12] t. n. luo, c. h. e. wu, and y. j. e. chen, “a 77-ghz cmos fmcw frequency synthesizer with reconfigurable chirps,” ieee trans. microw. theory techn., vol. 61, no. 7, pp. 2641–2647, jul. 2013. [13] w. wu, r. b. staszewski, and j. r. long, “a 56.4-to-63.4 ghz multi-rate all-digital fractional-n pll for fmcw radar applications in 65 nm cmos,” ieee j. solid-state circuits, vol. 49, no. 5, pp. 1081–1096, may 2014. [14] j. park, h. ryu, k. w. ha, j. g. kim, and d. baek, “76-81-ghz cmos transmitter with a phase-locked-loop-based multichirp modulator for automotive radar,” ieee trans. microw. theory techn., vol. 63, no. 4, pp. 1399–1408, apr. 2015. [15] g. hasenaecker, m. van delden, t. jaeschke, n. pohl, k. aufinger, and t. musch, “a sige fractional-n frequency synthesizer for mm-wave wideband fmcw radar transceivers,” ieee trans. microw. theory techn., vol. 64, no. 3, pp. 847–858, mar. 2016. [16] j. h. song, c. cui, s. k. kim, b. s. kim, and s. nam, “a low-phase-noise 77-ghz fmcw radar transmitter with a 12.8-ghz pll and a × 6 frequency multiplier,” ieee microw. compon. lett., vol. 26, no. 7, pp. 540–542, jul. 2016. [17] h. jia, l. kuang, w. zhu, z. wang, f. ma, z. wang, and b. chi, “a 77 ghz frequency doubling two-path phased-array fmcw transceiver for automotive radar,” ieee j. solid-state circuits, vol. 51, no. 10, pp. 2299–2311, oct. 2016. [18] i. m. milosavljević, ð. p. glavonjić, d. p. krčum, l. v. saranovac, and v. m. milovanović, “a highly linear and fully-integrated fmcw synthesizer for 60ghz radar applications with 7 ghz bandwidth,” springer analog integr. circuits signal process., vol. 90, no. 3, pp. 591–604, mar. 2017. [19] m. hitzler, s. saulig, l. boehm, w. mayer, w. winkler, n. uddin, and c. waldschmidt, “ultracompact 160-ghz fmcw radar mmic with fully integrated offset synthesizer,” ieee trans. microw. theory techn., vol. 65, no. 5, pp. 1682–1691, may 2017. [20] a. townley, p. swirhun, d. titz, a. bisognin, f. gianesello, r. pilard, c. luxey, and a. m. niknejad, “a 94-ghz 4tx-4rx phased-array fmcw radar transceiver with antenna-in-package,” ieee j. solid-state circuits, vol. 52, no. 5, pp. 1245–1259, may 2017. [21] e. öztürk, d. genschow, u. yodprasit, b. yilmaz, d. kissinger, w. debski, and w. winkler, “a 60-ghz sige bicmos monostatic transceiver for fmcw radar applications,” ieee trans. microw. theory techn., vol. 65, no. 12, pp. 5309–5323, dec. 2017. 568 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors 569 524 v. milovanović [22] federal communications commission (fcc), “operation within the band 5771 ghz, tile 47 cfr part 15, subpart c, ∮ 15.255,” nov. 2016. [23] b. p. ginsburg, k. subburaj, s. samala, k. ramasubramanian, j. singh, s. bhatara, s. murali, d. breen, m. moallem, k. dandu, s. jalan, n. nayak, r. sachdev, i. prathapan, k. bhatia, t. davis, e. seok, h. parthasarathy, r. chatterjee, v. srinivasan, v. giannini, a. kumar, r. kulak, s. ram, p. gupta, z. parkar, s. bhardwaj, y. c. rakesh, k. a. rajagopal, a. shrimali, and v. rentala, “a multimode 76-to-81 ghz automotive radar transceiver with autonomous monitoring,” in ieee int. solid-state circuits conf. (isscc) dig. tech. papers, feb. 2018, pp. 158–160. [24] v. winkler, “range doppler detection for automotive fmcw radars,” in proc. eur. radar conf., oct. 2007, pp. 166–169. [25] w. wang, x. chen, and h. wong, “a system-on-chip 1.5 ghz phase locked loop realized using 40 nm cmos technology,” facta universitatis, series: electronics and energetics, vol. 31, no. 1, pp. 101–113, mar. 2018. [26] s. kang, j. c. chien, and a. m. niknejad, “a w-band low-noise pll with a fundamental vco in sige for millimeter-wave applications,” ieee trans. microw. theory techn., vol. 62, no. 10, pp. 2390–2404, oct. 2014. [27] a. ergintav, y. sun, f. herzel, h. j. ng, g. fischer, and d. kissinger, “a 61 ghz frequency synthesizer in sige bicmos for 122 ghz fmcw radar,” in proc. eur. microw. integr. circuits conf., oct. 2016, pp. 325–328. [28] g. liu, a. trasser, and h. schumacher, “a 64-84-ghz pll with low phase noise in an 80-ghz sige hbt technology,” ieee trans. microw. theory techn., vol. 60, no. 12, pp. 3739–3748, dec. 2012. [29] h. j. ng, a. fischer, r. feger, r. stuhlberger, l. maurer, and a. stelzer, “a dll-supported, low phase noise fractional-n pll with a wideband vco and a highly linear frequency ramp generator for fmcw radars,” ieee trans. circuits syst. i, reg. papers, vol. 60, no. 12, pp. 3289–3302, dec. 2013. [30] j. vovnoboy, r. levinger, n. mazor, and d. elad, “a dual-loop synthesizer with fast frequency modulation ability for 77/79ghz fmcw automotive radar applications,” ieee j. solid-state circuits, vol. 53, no. 5, pp. 1328–1337, may 2018. [31] a. musa, r. murakami, t. sato, w. chaivipas, k. okada, and a. matsuzawa, “a low phase noise quadrature injection locked frequency synthesizer for mmwave applications,” ieee j. solid-state circuits, vol. 46, no. 11, pp. 2635– 2649, nov. 2011. [32] i. m. milosavljević, d. p. krčum, d. p. glavonjić, s. p. jovanović, v. r. mihajlović, d. m. tasovac, and v. m. milovanović, “a sige highly integrated fmcw transmitter module with a 59.5-70.5ghz single sweep cover,” ieee trans. microw. theory techn., vol. 66, no. 9, pp. 4121–4133, sep. 2018. 570 v. m. milovanović on range-doppler estimation in integrated fmcw radar sensors pb facta universitatis series: electronics and energetics vol. 34, no 4, december 2021, pp. 557-567 https://doi.org/10.2298/fuee2104557r © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper feature extraction for person gait recognition applications adnan ramakić1, zlatko bundalo2, željko vidović3 1rectorate, university of bihać, bihać, bosnia and herzegovina 2faculty of electrical engineering, university of banja luka, banja luka, bosnia and herzegovina 3university of east sarajevo, faculty of transport and traffic engineering, doboj, bosnia and herzegovina abstract. in this paper we present some features that may be used in person gait recognition applications. gait recognition is an interesting way of people identification. during a gait cycle, each person creates unique patterns that can be used for people identification. also, gait recognition methods ordinarily do not need interaction with a person and that is the main advantage of these methods. features used in a person gait recognition methods can be obtained with widely available rgb and rgb-d cameras. in this paper we present a two features which are suitable for use in gait recognition applications. mentioned features are height of a person and step length of a person. they may be extracted and were extracted from depth images obtained from rgb-d camera. for experimental purposes, we used a custom dataset created in outdoor environment using a long-range stereo camera. key words: gait recognition, gait energy image, backfilled gait energy image, height of a person, step length of a person. 1. introduction people may be identified using different biometric methods. examples of these methods are fingerprint, retina and iris recognition (identification based on eye features), facial recognition, keystroke dynamics, voice recognition etc. generally, they may be divided in physiological and behavioral biometric methods. physiological biometric methods include fingerprint, retina and iris recognition, hand geometry, facial recognition etc., while behavioral biometric methods include methods like keystroke dynamics, voice recognition, person signature recognition, gait recognition etc. received april 3, 2021; received in revised form august 14, 2021 corresponding author: zlatko bundalo faculty of electrical engineering, university of banja luka, 5 patre, 78 000 banja luka, bosnia and herzegovina e-mail: zlatbun2007@gmail.com 558 a. ramakić, z. bundalo, ž. vidović most of the above listed methods need some kind of interaction with a person during an identification process. on the other hand, gait recognition is a method that ordinarily does not need any interaction with a person during identification process. using some type of longrange cameras (e.g. zed stereo camera) some facial recognition methods also may be conducted without interaction with a person. today’s gait recognition approaches, which are in use, are model-based or appearance-based. model-based approach ordinarily exploits different parts of human body to create a model that are in use for identification purposes. some of human body parts that are ordinarily in use with model-based approaches are legs, arms, etc. in other words, some measures related to mentioned body parts are in use (e.g. arm length). appearance-based approach ordinarily uses persons’ silhouette representations. research related to gait recognition usually has been done using rgb or rgb-d cameras (also sometimes called rgb and rgb-d sensors) and datasets that were created with them. earlier were used rgb cameras, but today in use also are rgb-d cameras. rgb-d camera provides depth data along with rgb data. the most of research that has been done using rgb-d cameras were realized using kinect sensor developed by microsoft. kinect sensor provides rgb data along with depth data. in this paper we analyze some features that may be used along with well-known gait recognition methods. these features are height of a person and step length of a person. both features may be obtained from depth images of rgb-d camera. gait recognition methods that were used along with mentioned features are, appearance-based methods, gei (gait energy image) [1] and bgei (backfilled gait energy image) [2]. gei is an image that contains silhouettes (aligned, normalized and averaged) of a person over a gait cycle. bgei is similar to the gei, also represents an image with a person silhouettes, but silhouettes of a person are back filled from front most pixels. 2. related work in the field of gait recognition there is a large number of works. approaches that deal with gait recognition are usually divided in two types: model-based approach and appearance-based approach. model-based approach uses explicit models to represent and track different parts of human body (such as, e.g. legs or arms) over time while appearancebased approach ordinarily uses human silhouettes that are extracted from rgb or depth images. appearance-based approach usually does not use explicit models. in this paper we generally focused on some appearance-based approaches. han and bhanu [1] presented a spatiotemporal gait representation called gait energy image (gei). gei is an image that contains averaged silhouettes, normalized and aligned, of a person during a gait cycle. sivapalan et al. [3] presented a gait energy volume (gev). authors [3] extended gei with a 3d and used reconstructed voxel volumes instead of temporally averaging segmented silhouettes. sivapalan et al. [2] also presented backfilled gait energy image (bgei). bgei is a feature that may be constructed using side-view silhouettes or frontal depth images. bgei is an image, such as gei, with a person silhouettes, but silhouettes of a person are back filled from front most pixels. feature extraction for person gait recognition applications 559 hofmann et al. [4] used depth information with a gei in a way that gei required silhouettes were calculated using a depth data. also, authors [4] proposed and a feature defined as depth gradient histogram energy image (dghei). arora and srivastava [5] presented gait gaussian image (ggi), a period based gait technique that is used for feature extraction of gait image during a gait cycle. iwashita et al. [6] presented an approach in which an image that contains a human body is divided in multiple areas. for every mentioned area features are extracted and used in gait recognition process. ramakić et al. [7] and lenac et al. [8] presented approaches where they used appearancebased methods, such as gei and bgei, and height feature obtained from depth images for gait recognition tasks. lenac et al. [8] presented hgei-i and hgei-f methods where in case of first method, hgei-i, early fusion of information is realized while hgei-f performs late fusion of information. hgei-i represents a method for gait recognition where are combined gei features and feature height of a person in a way that height of a person is added as one of a features alongside features obtained from gei. then, classification process is realized after integration of gei features and height of a person feature. in hgei-f method, gei and height of a person are separately considered and based on results from each classifications single prediction is made. ramakić et al. [9] also presented a method for gait recognition that exploits silhouettes of a person along with height of a person and step length of a person. chattopadhyay et al. [10] presented a pose depth volume (pdv) feature for frontal gait recognition. bashir et al. [11] proposed a gait representation called gait entropy image (geni). geni encodes in a single image the randomness of pixel volumes in the silhouette images over a gait cycle. portillo-portillo et al. [12] presented an approach for a gait recognition. mentioned approach exploits gei and direct linear discriminant analysis (dlda) in order to create a view invariant model for identification. lishani et al. [13] proposed an approach which is based on the haralick features extracted from gei. rudek et al. [14] presented a method for a gait classification based on analysis of the trajectory of pressure centers extracted from a feet contact point with a ground. 3. feature extraction features that were extracted and used in gait recognition process are real height of a person and step length of a person. the main idea in this paper is using additional features along with well-known appearance-based gait recognition methods such as gei and bgei. 3.1. gei and bgei gei represents person’s silhouettes (aligned, normalized and temporally averaged) over a gait cycle in one image. gei is defined as: 560 a. ramakić, z. bundalo, ž. vidović  = = n t tjii n jig 1 ),,( 1 ),( (1) where n is the silhouette frames number in gait cycle, t is the frame number in gait cycle at moment of time, i(i, j) is the original silhouette image with (i, j) values in the image coordinate. examples of gei images for three people and for three different datasets are shown in fig. 1. first row shows gei images from own custom dataset created with a long-range stereo camera, second row shows gei images from well-known casia dataset b [15] [16] [17] and third row shows gei images also from well-known tum gait from audio, image and depth (gaid), tum-gaid [18] dataset. fig. 1 examples of gei images, for three different people, from own custom dataset, casia dataset b [15] [16] [17], and tum-gaid [18] dataset bgei is created as well as gei, with difference that bgei is constructed by first back filling the binary silhouettes, where the front most pixel on each row is found and from it feature extraction for person gait recognition applications 561 filled to the back of the image. examples of bgei images, for three different people, for our own custom dataset and tum-gaid dataset are shown in fig. 2. fig. 2 examples of bgei images, for three people, from own custom dataset and tum-gaid [18] dataset 3.2. height of a person and step length of a person height of a person and step length of a person were extracted from depth images. depth images contain information about distance of specific object from a camera. using mentioned information real height of a person and step length of a person may be estimated. these two features are conceptually simple and robust features which can be easily extracted and combined with some gait recognition methods. independent use of height of a person or step length of a person does not represent reliable way of identification, but in a combination with some gait recognition method can improve overall identification score. height of a person may be estimated from depth image as a distance between topmost point on person’s silhouette and ground plane. top-most point on silhouette is represented as vector that contains the fallowing values (eq. (2)): 2 1 x y p w      =       (2) where x and y are 2d image pixel coordinates. label w represents a disparity value. ground plane can be detected using random sample consensus (ransac). ransec represents 562 a. ramakić, z. bundalo, ž. vidović a plane detection method that are often in use in point cloud data. output from this step are a, b, c, and d plane parameters. in order to obtain 3d coordinates for the top-most point in cartesian coordinate system perspective transformation matrix was used. mentioned matrix is obtained through camera calibration process. this is shown in eq. (3): , 1 0 0 0 1 0 0 0 0 1 0 0 x y x x x x c c fq c c t t −    −    =   −−      (3) if a perspective transformation matrix is known, matrices multiplication should be done. this is shown in eq. (4): 3 2p q p=  (4) result is a fallowing 3d point vector as shown in eq. (5): 3 ' ' ' ' x y p z w      =       (5) in order to obtain metric system values and real values for distance it is necessary to divide all vector elements with w as shown in eq. (6) and eq. (7): 3 3' /p p w= (6) 3 1 x y p z      =       (7) in order to obtain distance between top-most point (eq. (7)) and ground plane, eq. (8) is used. 2 2 2 a x b y c z d d a b c  +  +  + = + + (8) obtained distance d represents a height of a person. also height of a person may be estimated based on height of a person’s silhouette in depth image. in that case, two points are necessary: top-most point and bottom point between legs of a person. both points can be calculated as described in previous text for the top-most point. distance between these feature extraction for person gait recognition applications 563 two points represents a height of a person. in this paper height of a person was estimated as a distance amongst two points, top-most point and bottom point. this is illustrated in fig. 3. step length of a person was estimated as a distance between two points, defined on left and right leg which is also illustrated in fig. 3. average value for step length of a person, which is obtained over a gait cycle, was used. fig. 3 depth image with estimated height of a person and step length of a person (in meters) 4. experimental setup in this paper we used an own custom dataset that contains 14 persons. all 14 persons in dataset are in normal walk. dataset was recorded in outdoor environment. creation of dataset was conducted using a zed long-range stereo camera. all of mentioned persons in dataset walking without any accessories (e.g. backpack) and they captured with 90 degrees’ angle. experimental test was conducted using matlab. for every of mentioned 14 persons there is a six gei and bgei images as well as height and step length values for each person. we used bag of features with vocabularysize of 500 (default value in matlab). mentioned value corresponds to k in k-means clustering algorithm that was used on extracted feature descriptors. we also defined pointselection as a detector. pointselection is a selection method for picking point location. from gei and bgei images feature points were selected using speeded-up robust features (surf) algorithm. people identification was realized using classification process. classification was realized using support vector machine (svm) algorithm. after features was obtained dimensionality reduction was conducted using principal component analysis (pca). also cross-validation was used, i.e. five-fold cross-validation. that means that an original dataset is partitioning in a way that there is a subset to train algorithm and remaining data for testing. in case of k-fold cross-validation data are partitioned in k randomly chosen subsets or folds where subsets are approximately equal size. one subset is used to validate the model 564 a. ramakić, z. bundalo, ž. vidović trained using the remaining subsets. process is repeated k times. fig. 4. shows a steps during a features extraction and classification. fig. 4 steps during a features extraction steps shown in fig. 4 can be described as fallows. when depth images are available silhouettes of a person can be extracted and also height of a person and step length of a person can be estimated. before that, it’s necessary to do person segmentation from depth image. silhouettes of a person can be also extracted from rgb images. after person segmentation from depth image, silhouettes of a person can be extracted and height of a person and step length of a person can be estimated. if silhouettes of a person are feature extraction for person gait recognition applications 565 available, gei or bgei (depending on what is being created) can be created. when gei or bgei images are available for each person, features can be extracted from them. features from gei or bgei images and height of a person and step length of a person are than classified using svm algorithm. in final step there are results of classification. 5. results experimental research has been done using dataset with 14 people in gait. methods that were tested are gei, bgei, gei along with height and step length of a person (geiheight-step integration), bgei along with height and step length of a person (bgeiheight-step integration) and only height of a person as a feature. step length of a person was not tested as a stand-alone feature because it is not too reliable for people identification when it is only feature for identification. when height of person was used it means that only values of height were classified with svm classifier. in case of gei or bgei only extracted features were classified using svm classifier. when bgei and gei were used along with height and step length of a person that means that height and step length values were added as additional features alongside features from gei and bgei and that together classified with svm classifier. results of classification are shown in table 1. table 1 classification results methods results with svm classifier height feature 83.3% bgei 85.7% gei 97.6% bgei + height and step length (bgei-height-step integration) 94.0% gei + height and step length (gei-height-step integration) 100.0% height as a method for a people identification has lowest result and that is expected because many people have same or similar height. bgei has better result than height of a person but lower compared to gei. gei as a method for people gait recognition has good overall result of 97.6%. in cases when height and step length of a person were used along with gei and bgei overall results of identification were improved. in case when bgei was used along with height and step length of a person (bgeiheight-step integration) result is 94% in regards to result of 85.7% when bgei was used stand-alone as a method for people gait identification. also, in case of gei, result of gei-height-step integration was better in regards to using a gei as a stand-alone method. result in case when only gei was used is 97.6% while in gei-height-step integration is 100%. fig. 5 shows obtained results for all used method while in fig. 6 is shown comparison between used methods. 566 a. ramakić, z. bundalo, ž. vidović fig. 5 obtained results for used methods fig. 6 comparison between used methods 6. conclusion gait recognition is interesting way for identification. people may be identified with different methods such as fingerprint, retina and iris recognition, facial recognition, voice recognition etc. most of above mentioned methods ask for some interaction with a person during identification process. gait recognition methods ordinarily do not need any interaction with a person during a process of identification and that is the main advantage of these type of methods. there are two approaches that deal with gait recognition, model-based approach and appearance-based approach. in this paper we presented some additional features that can be used along with well-known appearance-based gait recognition methods such as gei and bgei. mentioned additional features are height and step length of a person. feature extraction for person gait recognition applications 567 experimental research was point out that integration of features some well-known gait recognition methods, such as gei and bgei, and additional features such as height and step length of a person significantly improves accuracy of identification in regards to stand-alone use of appearance-based gait recognition methods. experimental results show that in case when gei-height-step integration was used people identification result is approximately 100% for used own custom dataset. references [1] j. han and b. bhanu, "individual recognition using gait energy image",” ieee тrans. pattern anal. mach. intell., vol. 28, no. 2, pp. 316–322, feb. 2006. [2] s. sivapalan, d. chen, s. denman, s. sridharan and c. fookes, "the backfilled gei-a cross-capture modality gait feature for frontal and side-view gait recognition", in proceedings of the international conference digital image computing techniques and applications (dicta), ieee, 2012, pp. 1–8. [3] s. sivapalan, d. chen, s. denman, s. sridharan and c. fookes, "gait energy volumes and frontal gait recognition using depth images", in proceedings of the international joint conference on biometrics (ijcb), ieee, 2011, pp. 1–6. [4] m. hofmann, s. bachmann and g. rigoll, "2.5 d gait biometrics using the depth gradient histogram energy image", in proceedings of the 5th international conference biometrics: theory, applications and systems (btas), ieee, 2012, pp. 399–403. [5] p. arora and s. srivastava, "gait recognition using gait gaussian image", in proceedings of the 2nd international conference signal processing and integrated networks (spin), ieee, 2015, pp. 791–794. [6] y. iwashita, k. uchino, and r. kurazume, "gait-based person identification robust to changes in appearance", sensors, vol. 13, no. 6, pp. 7884–7901, june 2013. [7] a. ramakić, d. sušanj, k. lenac and z. bundalo, "depth-based real-time gait recognition", j. circuits, syst. comput., vol. 29, no. 16, p. 2050266, 2020. [8] k. lenac, d. sušanj, a. ramakić and d. pinčić, "extending appearance based gait recognition with depth data", appl. sci., vol. 9, no. 24, p. 5529, dec. 2019. [9] a. ramakić, z. bundalo and d. bundalo, "a method for human gait recognition from video streams using silhouette, height and step length", j. circuits, syst. comput., vol. 29, no. 7, p. 2050101, june 2020. [10] p. chattopadhyay, a. roy, s. sural and j. mukhopadhyay, "pose depth volume extraction from rgb-d streams for frontal gait recognition", j. vis. commun. image represent., vol. 25, no. 1, pp. 53–63, jan. 2014. [11] k. bashir, t. xiang and s. gong, "gait recognition using gait entropy image", in proceedings of the 3rd international conference on imaging for crime detection and prevention, 2009, pp. 1–6. [12] j. portillo-portillo, r. leyva, v. sanchez, g. sanchez-perez, h. perez-meana, j. olivares-mercado, k. toscano-medina and m. nakano-miyatake, "a view-invariant gait recognition algorithm based on a joint-direct linear discriminant analysis", appl. intell., vol. 48, no. 5, pp. 1200–1217, may 2018. [13] a. o. lishani, l. boubchir, e. khalifa and a. bouridane, "human gait recognition based on haralick features", signal, image video process., vol. 11, no. 6, pp. 1123–1130, sep. 2017. [14] m. rudek, n.m. silva, j.p. steinmetz and a. jahnen, "a data-mining based method for the gait pattern analysis", “facta univ. mech. eng., vol. 13, no. 3, pp. 205-215, 2015. [15] s. zheng, j. zhang, k. huang, r. he and t. tan, "robust view transformation model for gait recognition", in proceedings of the international conference on image processing (icip), ieee, 2011, pp. 2073–2076. [16] s. yu, d. tan and t. tan, "a framework for evaluating the effect of view angle, clothing and carrying condition on gait recognition", in proceedings of the 18th international conference on pattern recognition (icpr), vol. 4, ieee, 2006, pp. 441–444. [17] "the institute of automation, chinese academy of sciences (casia)", link: http://www.cbsr.ia.ac.cn/ english/gait%20databases.asp, (accessed: 25.03.2021.) [18] m. hofmann, j. geiger, s. bachmann, b. schuller and g. rigoll, "the tum gait from audio, image and depth (gaid) database: multimodal recognition of subjects and traits", j. vis. commun. image represent., vol. 25, no. 1, pp. 195–206, jan. 2014. facta universitatis series: electronics and energetics vol. 33, no 3, september 2020, pp. 413-427 https://doi.org/10.2298/fuee2003413m © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd fault detection using fra in order to improve the aging model of power transformer saša d. milić 1 , denis ilić 1 , milan ponjavić 2 1university of belgrade, electrical engineering institute nikola tesla, belgrade, serbia 2university of belgrade, school of electrical engineering, belgrade, serbia abstract. power transformers are constantly exposed to mechanical, thermal and electrical stresses during operation. in this paper, the authors propose an improved aging model of power transformers by adding the impact of mechanical deteriorations. in the current practice, the mechanical deformation and dislocation of the windings and core are not sufficiently distinguished as components that influence the aging of the transformer. hence, the current aging model was expanded with a functional block that contains several typical failures in order to emphasize their impact on the lifetime of transformers and their aging as well. the authors used the frequency response analysis (fra) method for the fault detection and location of the mechanical deformations of its active parts. the correlation function is used to determine the level of the detected failure. all presented test results are obtained in real exploitation conditions. key words: aging model, fault detection, frequency response analysis, maintenance, monitoring 1. introduction reliable, safe and continuous production flow in today‟s industry is of undeniable importance. modern, automated production cycles are fully based on electricity as the cleanest and the most easily applicable energy source. any delay in the production can cause potentially significant financial losses and must be entirely prevented or reduced to a minimum duration. hence, plant engineers must have scheduled inspections of the equipment “health” and planned interventions in the most appropriate point in time, as production must be carried out. that is the most convenient and the cheapest way to maintain a large, valuable, important facility. as mentioned above, there is no industry without a sustainable electrical power source. foundations of the electricity relate to the power transformers and generators. power transformers are irreplaceable and crucial in all areas of the industry, as they step up voltage and thus enable long-distance transmission of electricity with lower looses, received november 21, 2019; received in revised form february 28, 2020 corresponding author: saša d. milić university of belgrade, electrical engineering institute nikola tesla, 8a koste glavinića, 11000 belgrade, serbia e-mail: s_milic@yahoo.com  414 s. d. milić, d. ilić, m. ponjavić and step-down voltage and enable its use in medium and low voltage motors, converters, lighting, ac, etc. any major fault in power transformer causes a power outage and delay in production. preventing unplanned outages which can jeopardize production and financial gain became the main task for field test engineers, as they must provide information about equipment “health” and schedule needed services and interventions. condition monitoring, fault detection and diagnosis, prognosis and several types of management are effective means to reduce the downtime and the maintenance cost and to improve the reliability and lifetime of the power transformers and generators. during the last two decades, the use of a large number of theories in order to improve their operations in the field of management, maintenance, monitoring and control of electrical power systems is noticeable. entire scientific and technical areas have expanded researching these issues. in recent years, business trends in the power sector imply the need to reduce maintenance costs, operate transformers as much as possible and prevent forced outages. today's development of measurement techniques and methods, as well as the development of software tools and hardware, encourages the rapid development of complex monitoring systems and diagnostic methods for measuring, monitoring, predicting and analyzing potential failures of capital equipment (generators, transformers, boilers, hv motors...) in the power sector. there is a number of off-line and on-line monitoring/diagnostic techniques which are currently used and developed further [1], [2], most relevant being:  dissolved gas analysis  partial discharges  direct hot spot measurement  degree of polymerization  furan analysis  on-load tap changers  power factor of bushings  recovery voltage measurement  detection of winding displacement  frequency response analysis (fra) three main mechanisms contribute to the insulation aging or deterioration in transformers: hydrolysis, oxidation and pyrolysis. therefore, insulation aging or deterioration is a time function of temperature, moisture content, and oxygen content [3]. however, these mechanisms can be initiated and accelerated by mechanical deterioration of almost all parts (windings, core...) of the transformer. this paper emphasizes the need to monitor and analyze mechanical deterioration (deformations) and potential mechanical failures in power transformers. the authors also emphasize the fact that the mechanical deformations of the power transformer further shorten its lifetime. based on the foregoing, the paper presents an advanced model of aging of the power transformer by adding the influence of mechanical failures on the existing model. as a tool for mechanical deformations, the detection method of the windings frequency response analysis is suggested, in the form of the frequency response analysis (fra). fra is an offline test based on the measurement of the impedance, admittance, or transfer function of a particular phase as a function of a wide frequency range which is used as a transformer fingerprint that can be compared with its previous signatures to detect any mechanical deteriorations (such as winding displacements, etc.) [4 7]. fault detection using fra in order to improve the aging model of power transformer 415 there are many mathematical methods, algorithms and procedures for signal processing and analysis [8]. fra is one of the methods that were created as a result of the mentioned multi-year research effort in order to improve monitoring and fault detection in power systems. this method aims to detect and recognize mechanical deformations inside the transformer without the need for its opening and visual inspection. this is one of the main reasons why the authors decided that the results obtained with this method illustrate the importance of the proposed, improved and expanded aging model of power transformers. 2. power transformer aging and lifetime power transformers are constantly exposed to mechanical, thermal and electrical stresses during operation. therefore, fault detection and monitoring are very important for condition and remaining lifetime assessment of power transformers [9], [10]. contrary to an ideal transformer, a practical transformer has winding resistance, flux leakage, finite permeability and core losses [11], [12]. a transformer is designed to have sufficient dielectric and mechanical strength to withstand the maximum predicted and expected operating stresses. various stresses during the service life of a transformer can exceed these expectations and degrade transformer insulation, magnetic core and the whole mechanical structure. during an unpredicted short-circuit current, axial and radial electromagnetic forces in the windings can significantly exceed the projected values and cause permanent deformation such as tilting and buckling, or destroy the entire winding [13]. excessive radial forces can cause buckling of a transformer, while tilting is usually caused by axial forces. these forces combined can cause axial bending, winding twisting, and other winding deformations. certain magnitudes of forces that cross the point of elastic deformation of the conductors can permanently deform the winding, without interrupting it, destroying it, etc. if you do not notice this winding can be safely kept in operation. however, its projected mechanical integrity is compromised and at the time of the next stress, the deformed winding can no longer withstand the projected electromagnetic force of short-circuits, i.e. its mechanical strength is significantly reduced. for example, when a transformer is taken off-line, a certain amount of residual flux remains in the core. the residual flux can be as much as 50% to 90% of the maximum operating flux, depending on the type of core steel. when voltage is reapplied to the transformer, the flux introduced by this source voltage builds upon the one already existing in the core. then the magnitude of this inrush current can be up to 10 times the rated fullload current [14]. these operating conditions happen often. there is a special danger to the transformer if it already has some mechanical deteriorations. in this case, additional mechanical deterioration (dislocation and deformation of the windings and/or core) occurs due to additional stress forces. when the transformer returns to the nominal operating regime, these deteriorations can be reflected in the increase in losses, which inevitably leads to an increase in temperature, increased partial discharges, increased vibrations, etc. planning the flow and schedule of activities and selecting measurement and test methods for testing power transformers are the first steps in planning maintenance. fig.1 presents a simplified algorithm for maintenance and testing of power transformers in order to systematize the flow of all necessary activities. 416 s. d. milić, d. ilić, m. ponjavić fig. 1 maintenance and testing algorithm since it is practically impossible to determine the exact size of the damage within the windings and/or core (without opening a transformer) the authors recommend that the detection of mechanical deteriorations is done by measurements using some of the previously mentioned non-invasive measurement methods. the results of these measurements should be used as a reliable indicator of the weakening of mechanical stiffness and the occurrence of deformations, and consequently reducing the operational readiness and lifetime of the transformer. since mechanical deteriorations are a consequence of stochastic undesirable effects, it is difficult to estimate their impact on the transformer‟s lifetime. transformer age is an important factor to consider when identifying candidates for replacement or rehabilitation. although actual service life varies widely depending on the manufacturer, design, quality of assembly, materials used, maintenance and operating conditions, the expected life of a transformer is usually about 40 years. some of the most fault detection using fra in order to improve the aging model of power transformer 417 important issues in the power system are closely related to the assessment of the remaining lifetime of capital equipment such as power transformers. 2.1. the temperature influence on the lifetime of power transformer “bathtub curve” (fig. 2) represents a traditional approach to the graphic representation of the lifetime of the power transformer and describes its hypothetical failure rate versus time. however, the accelerated development and widespread implementation of on-line and real-time monitoring systems, as well as implementation of modern maintenance strategies (condition-based maintenance, reliability centred maintenance, risk-based maintenance, etc.) have raised numerous criticisms of this approach. there are also some papers [15], [16] that point to significant shortcomings in this approach. fig. 2 bathtub curve [15] the traditional approach to aging of the transformer is directly related to aging of transformer insulation that is a time-dependent function of temperature, moisture content, and oxygen content. the authors of this paper are trying to emphasize that a prior statement should be extended with the impact of mechanical failures in the lifetime and aging of the power transformer. 2.2. mechanical failures and improved aging model overview of typical causes of transformer failures is given in table 1 [17]. tab. 1 typical causes of transformer failures internal external insulation deterioration lightning strikes loss of winding clamping system switching operations overheating system overload oxygen system faults (short circuit) moisture mechanical deformations & damages solid contamination in the insulating oil partial discharge design & manufacture defects winding resonance mechanical deformations & damages 418 s. d. milić, d. ilić, m. ponjavić the authors of this paper enhance the mentioned table that is complemented with mechanical failures whose causes can be both inside and outside of the transformers. this is done because of two reasons. the first reason is the need to extend the existing aging model with mechanical movements and deformations that can accelerate the rate of aging. the second reason is the need to timely recognize the type of failure in terms of selecting the most appropriate measuring methods that can detect, locate, monitor, and/or analyze its impact on the condition of the power transformer. the condition assessment of power transformers is always preceded by their lifetime assessment. the remaining lifetime assessment is closely linked to aging. these relationships indicate the need for a more accurate aging model of transformers. the existing aging model [10] has a significant drawback because it does not take into account the impact of mechanical failures in the lifetime and aging of the power transformer. fig. 3 shows the improved aging model that takes into account six major causes of mechanical failures. according to the aging model shown in fig. 3, it is possible to determine the place and role of standard (traditional and new) measurement and diagnostic methods for monitoring and assessing the condition of the transformer [1720]. to detect any mechanical change on power transformers, the best available method is by performing frequency response analysis (fra) measurement on the transformer winding [21]. as a comparative, leakage reactance and excitation current and power measurements are usually applied. not all of them can produce enough force to cause deformation of the winding or core, but can cause winding and core insulation breakdown and turn-to-turn faults. recent studies tend to estimate the remaining life of the transformer by means of deep analysis of the results obtained by electrical and chemical tests. usually, the expected power transformer life can be presented as a curve (fig 4). fig. 3 improved power transformer aging model fault detection using fra in order to improve the aging model of power transformer 419 fig. 4 transformer aging curve: 1 – normal aging curve, 2 – accelerated aging curve, 3 – electromechanical stresses, 4 – insulation strength reserve, 5 – insulation breakdown, 6 – shortened transformer life each time when a transformer experiences a short circuit fault, or overvoltage, it loses some of the factory designed mechanical and electrical strength. after a long time in service, cellulose insulation becomes brittle, and cannot maintain designed mechanical specs, although dielectric strength cannot be threatened. the most powerful units, 10 mva, 20 mva and more, are usually carefully monitored as they provide electricity for major production sectors. those less powerful and usually cheaper, are subjected to scheduled visual inspections and perhaps scheduled insulation resistance test before being put to operation. sometimes, even the most monitored and maintained transformer insulation can breakdown suddenly, causing unwanted outages and rising economic pressure on facility management. transformer failure must be estimated in a timely manner to enable top management to make the right decision (repair or replace). there are several non-invasive measurement methods (some of them are mentioned above) that may indicate some of the potential mechanical failures. the practice has shown that the fra measurement method is the most applicable because it can detect and diagnose the greatest number of mechanical failures. 3. power transformer mechanical condition assessment using frequency response analysis frequency response analysis (fra) is a measurement method that is used to detect and identify the mechanical failure of power transformer such as movements and deformations of its windings and core [21–32]. the fra is based on measuring the impedance of the transformer (r, l and c) that is related to the geometry of the core and windings. actually, fra sees the transformer windings as a distributed network of the rlc parameters, or frequency-dependent impedance. those parameters are mainly geometry dependent, since any change in geometry alters parameters values, for example, capacitance. that change will reflect as a deviation in the frequency response of the winding. in general, any system represented as a „black box‟, with its input and output, will react to the input signal (fig. 5). output signal depends on system parameters, attenuation, and input signal amplitude and frequency. the behavior of the system on the input signal is defined by the transfer function [23], [24]. 420 s. d. milić, d. ilić, m. ponjavić fra (sfra sweep frequency response analysis) is a modern, simple and reliable method for recording winding frequency responses. responses are gathered for every winding, regarding transformer vector group, by injecting sinusoidal voltage at the one winding end. the frequency response is derived by varying frequency of the input signal from fstart to fstop of, while amplitude is kept stable. the voltage amplitudes and phases at both ends are measuring simultaneously. frequency range is usually predefined, and it is common to start frequency response recording in a few mhz area and tuning frequency down to a 10 hz or 20 hz. for oil-filled power transformers, range from 20hz up to a 2 mhz is enough, regarding test duration and optimal, useful responses spectrum. responses in the frequency domain are considered as a fingerprint of the winding geometry. any change in response could indicate deformation in winding geometry. recorded frequency responses are compared to a fingerprint response which was recorded when the transformer was considered “healthy”. it is desirable to have recorded fingerprint responses recorded during the handover tests. that is common for a new powerful gsu and distribution transformers, but not for small units. if there are no recorded fingerprint responses, the comparison could be made to transformers of the same type, “sister units”, or between the two phases of the same winding. comparison is made visually, or by the means of statistical and mathematical operations. in engineering practice, the responses are divided into a few frequency sub-bands, in which sfra traces showed sensitivity for failures specified in table 2. tab.2 frequency sub-bands sensitivity frequency sub-band failure sensitivity <2khz core deformations, open circuits, shorted turns, residual magnetism 2khz – 20khz bulk deformation, winding deformation, clamping structure deformation 20khz – 600khz windings, main or tap winding 600khz – 2 mhz windings, loose connection, bad grounding influence comparison between two frequency responses is performed using a statistical indicator for investigating the transformer‟s mechanical condition. cross correlation (cc) coefficients are widely used mathematical relation for response deviation assessment. simplified, cross correlation of traces x and y is (1) [33 38]: _ _ 1 _ _ 2 2 1 1 ( ) (y ) ( ) (y ) n i ii n n i ii i x x y cc x x y              (1) where xi and yi are two traces being compared, and ̅ and ̅ are the means values. if two sets of numbers are perfectly matched, the value of cc is 1, whereas if there is no resemblance between these two sets, the value is 0. a rough estimation of the cc factors meaning is provided in table3. tab. 3 frequency sub-bands sensitivity corellation cc factor good 0.95 – 1.00 fair 0.90 – 0.94 poor 0 – 0.89 no correlation  0 fault detection using fra in order to improve the aging model of power transformer 421 there is a new fra interpretation [35] that propose improved cc that include the phase response in the interpretation. this approach implies that instead of euclidean distance, it introduces a complex distance which includes phase information. the phase information increases the sensitivity of the cross-correlation coefficients. sweep fra (sfra) measurement is accurate, repeatable, non-destructive since injecting voltage whose amplitude is only 10 vpp. since the instrument “knows” the precise signal frequency, while sweeping, narrowband filters can be applied in order to eliminate noises. 3.1. example 1 – faulty transformer three phase, two winding transformer geometry can be inspected within an hour, and since instruments plot responses during the test, an experienced engineer can make a suggestion instantly as to what might be a problem with the transformer. an example of the similar situation will be presented. three phases, a two winding transformer which powers few pumps in a power plant had been turned off by buchholz relay tripping a switch. it was very important to do fast fault recognition, and sfra method seemed appropriate. immediately after a dismantling hv and lv transformer cables, sfra test is done. since it is a very small unit, there are no factory recorded fingerprints. high voltage winding opencircuit sfra traces are presented in fig. 5 and short-circuit sfra traces are presented in fig.6. fig. 5 open-circuit primary winding sfra traces fig. 6 short-circuit primary winding sfra traces 422 s. d. milić, d. ilić, m. ponjavić in general, traces do not match perfectly, but it was clear that the one from phase a deviate from the other two responses significantly. it was obvious in the middle and lowfrequency range. winding frequency responses gave an indication that phase “a” winding had shorted turns and that transformer would need a time-consuming repair (table 1). calculated cc factor in frequency sub-band 20 hz – 5 khz, cc=0.9785, and for sub-band 5 khz-15 khz, cc= 0.4821, confirmed an already obvious problem. it is confirmed later, with no load loss measurement (table 4). even during a no-load test, buchholz relay was filled with combustible gasses within a minute. it was a sign of a stable, firm turn-to-turn connection, followed by great local temperature rise. the transformer was sent to the factory for dismantling and visual inspection. after dismantling a transformer, and taking the core and windings out of the transformer tank, visual inspection gave no indication of the fault in the windings and core of the transformer. so, windings were energised again, so it was possible to visually check and confirm turn to turn insulation problem. after unwinding has been done, it was obvious that inter-turn insulation was degraded and that a few turns had actually weld themselves (fig. 7). fig. 7 phase a winding visual inspection 3.2. example 2 – probably deformed winding in the other example, generator‟s step-up transformer has a frequency response deviation which indicates possible problem with a transformer windings (fig. 8). deviation is present in short-circuit measuring scheme when the effects of the core are practically eliminated and inter-winding geometry is tested. usually, in short-circuit scheme, because the core effect is eliminated, there are no differences in the shape of the winding response between the phases. phase “a” and “c” responses were the same. calculation of the cc factor between phase “c” (or “a”) and “b” in the frequency sub-band 5khz – 15khz gave the number cc=0.9352. referring to table 3, it is clear that is not a perfect match, and that deeper investigation is needed. as a complementary method, measurement of the low voltage leakage reactance is done, and results showed a deviation between phases up to a 7%, which is enough for concern (table4). again, phase “b” leakage inductance is about 194.5 mh, while the other two phases had similar values, around 181 mh. fault detection using fra in order to improve the aging model of power transformer 423 a) b) c) fig. 8 short circuit hv winding sfra traces: a) hv winding, b) hv winding, lv winding shorted, c) magnified deviation of phase “в” 424 s. d. milić, d. ilić, m. ponjavić tab. 4 results leakage reactance measurements connection voltage (v) current (a) z () l (mh) l/l (%) a-n 172,40 3 57,47 181,98 7,11 b-n 184,20 3 61,19 194,49 c-n 172,70 3 57,16 181,58 3.3. routine inspection and repair based on cc factor a power transformer maintenance and testing guide with recommended frequency is given in the literature [36]. almost all maintenance recommendations are written for the average conditions under which the transformer is required to perform and operate. most of these recommendations are applied during preventive maintenance, which basically involves scheduled maintenance and testing. predictive maintenance involves additional monitoring and testing. the main goals of this maintenance should predict potential failure and reduce the costs of unscheduled maintenance and ordinary maintenance. as already mentioned, the deviation of the transformer aging curve from the normal (fig. 4) is practically impossible to quantify and precisely mathematically calculate. therefore, the authors recommend the alternatives in the form of detection of mechanical deteriorations and monitoring of their trends. cc factor with its suggested values (tab. 3) can describe the mechanical condition of the transformer taking into account for example it's coupling. thus, from the perspective of the projected geometry of windings and/or magnetic core, it can be concluded:  if cc is in the range of 0.95-1 it is considered that no significant mechanical deteriorations have occurred and that the curve of aging is the one that has been declared in the factory (fig.4).  if cc is in the range of 0.90-0.94, it is considered that there are some mechanical deteriorations, so that the factory curve is shifted downward, resulting in a shortening of the lifetime. in this case, it is recommended that measurements and tests are performed more often with the aim of monitoring the failure tendency. the optimum moment for applying additional remote (online and real-time) monitoring systems is when the cc factor is in this interval.  if cc is in the range of 0.89-0, it is considered that there is a risk of fatal failure that may be a result of the next mechanical stress. 4. concluding remarks power transformers are irreplaceable in modern developed electricity production and distribution. the demand for reliable and safe power supply caused power transformer life management techniques to be established. hence, aging of the transformer, or power transformer remaining service life, became one of the main topics in the asset management sector. different aging factors are taken into account, in order to define the expected remaining lifetime of the transformer. the problem of temperature rising and the appearance of hot-spots have been identified as the result of increased losses due to, inter alia, the occurrence of mechanical deteriorations. mechanical deformation and dislocation of the windings and core are not sufficiently distinguished as components that influence the aging of the transformer, so authors proposed fault detection using fra in order to improve the aging model of power transformer 425 upgrading of the current power transformer aging model by introducing a new, detached set of parameters which will introduce mechanical strength of the winding-core structure into the existing model. focusing on the problem of disturbed geometry of the windings and core, demanded we find suitable measurement methods that would discover mentioned defects and enable their analysis and monitoring. the method of analysis of the frequency response of transformer windings was selected as the most appropriate since it is simple, fast, easy, non invasive way to detect geometry deformations of the power transformer. we analyzed its possibilities through two examples in real operating conditions. for numerical interpreting of the test results, the authors used cross correlation (cc) factors, which are calculated for mentioned examples and frequency band that indicated major response deviation. further research will be concentrated on the quantifying and recognising mechanical deformations in their infancy, in order to make planned interventions and monitor “power transformer health”. approaching the transformer condition monitoring in this manner can prevent excessive financial losses and major equipment failures because of long, expensive repairs and also expensive, prolonged intervals without power delivery. acknowledgement: this research was funded by grant (project no. tr 33024) from the ministry of education, science and technological development of serbia. references [1] s. v. kulkarni, s. a. khaparde, “transformer engineering: design and practice”, marcel dekker inc., new york, 2004. [2] c. sun, p. r. ohodnicki, e. m. stewart, “chemical sensing strategies for real-time monitoring of transformer oil: a review”, ieee sensors journal, vol. 17, no. 18, pp. 5786–5806, 02 august 2017. [3] k. qian, c. zhou, y. yuan, “impacts of high penetration level of fully electric vehicles charging loads on the thermal ageing of power transformers”, international journal of electrical power and energy systems, elsevier, vol. 65, pp. 102–112, 201. [4] t. d. rybel, a. singh, j. a. vandermaar, m. wang, j. r. marti, k. d. srivastava, “apparatus for online power transformer winding monitoring using bushing tap injection”, ieee transactions on power delivery, vol. 24, no. 3, pp. 996–1003, july 2009. [5] m. florkowski, j. furgal, “modelling of winding failures identification using the frequency response analysis (fra) method”, electric power system research, vol. 79, no. 7, pp. 1069–1075, july 2009. [6] x. lei, j. li, y. wang, s. mi, c. xiang, “simulative and experimental investigation of transfer function ofinterturn faults in transformer windings”, electric power systems research, elsevier, vol. 107, pp. 1–8, 2014. [7] e. g. luna, g. a. mayor, c. g. garcia, j. p. guerra, “current status and future trends in frequencyresponse analysis with a transformer in service”, ieee transactions on power delivery, vol. 28, no. 2, pp. 1024–1031, april 2013. [8] r. stanković, “fft and decision diagram methods for calculation of discrete spectral transforms”, facta universitatis, series: electronics and energetics, vol. 16, pp. 415–422, december 2003. [9] cigré working group a2-18, publication 227: “life management techniques for power transformer”, 2003. [10] cigré working group 12.18 “life management of transformers: guidelines for life management techniques for power transformers”, june 2002. [11] s. puzović, b. koprivica, a. milovanović, m. đekić, “analysis of measurement error in direct and transformer-operated measurement systems for electric energy and maximum power measurement”, facta universitatis, series: electronics and energetics, vol. 27, no. 3, pp. 389–398, september 2014. [12] b. stošić, “wave digital models of ideal and real transformers”, facta universitatis, series: electronics and energetics, vol. 29, no. 2, pp. 219–231, june 2016. [13] m. bagheri, m. s. naderi, t. r. blackburn, t. phung, “a case study on fra capability in detection of mechanical defects within a 400mva transformer”, 21, rue d‟artois, f-75008 paris, cigre, 2012, d1-313. [14] r. gopika, s. deepa, „study on power transformer inrush current“, national conference on "emerging research trends in electrical, electronics & instrumentation" (erteei'17), iosr journal of electrical and electronics engineering (iosr-jeee), vol. 2, e−issn: 2278-1676, p−issn: 2320-3331, 2017, pages: 59-63. http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=7361 426 s. d. milić, d. ilić, m. ponjavić [15] g. a. klutke, p. c. kiessler, m. a. wortman, “a critical look at the bathtub curve”, ieee transactions on reliability, vol. 52, no. 1, pp. 125–129, 2003. [16] s. chakravorti et al., “recent trends in the condition monitoring of transformers”, power systems, , springer-verlag london, 2013. [17] m. wang, a. j. vandermaar, k. d. srivastava, “review of condition assessment of power transformers in service”, ieee electrical insulation magazine, vol. 18. no. 6, pp. 12-25, november-december 2002. [18] w. williams, m. jones, s. anderson, “managing critical power transformer assets”, electric energy, 1160 levis, suite 100, terrebonne, qc canada j6w 5s6, vol.16, no. 6, november-december 2012, terrebonne, qc canada. [19] w. h. bartley, “failure analysis of transformer”, imia wgp 33, international association of engineering insurers, 36th annual conference – stockholm, 2003. [20] t. k. saha, “review of modern diagnostic techniques for assessing insulation condition in aged transformers”, ieee transactions on dielectric and electrical insulation, vol. 10, no. 5, pp. 903-917, 2003. [21] m. f. m. yousof, c. ekanayake, t. k. saha: "study of transformer winding deformation by frequency response analysis", in proceedings of the ieee power & energy society general meeting 2013, publisher ieee, 21-25 july 2013, vancouver, pp. 1–5. [22] cigre wg a2.26, “mechanical-condition assessment of transformer windings using frequency response analysis (fra)”, 2007. [23] c. sweetser, t. mc grail, “sweep frequency response analysis – transformer application”, a technical paper from doble engineering company, version1.0, pp. l-47, 2003. [24] a. kraetge, m. kruger, j. l. velasquez, h. viljeon, a. dierks, “experiance with the practical application of sweep frequency response analysis (sfra) on power transformers", proceedings of the l6th international symposium on high voltage engineering, johannesburg, isbn 978-0-620445849, pp. 1–6, 2009. [25] j. bak – jensen, b. bak jensen, s. d. mikkelsen, “detection of faults and ageing phenomena in transformers by transfer function”, ieee transactions on power delivery, vol. 10, no. 1, pp. 318–314, january 1995. [26] p. werelius, m. öhlen, l. adeen e. brynjebo, “measurement considerations using sfra for condition assessment of power transformers”, in proceedings of the international conference on condition monitoring and diagnosis, beijing, china, april 21-24, 2008. [27] s. a. ghani, y. h. m. thayoob, y. z. y. ghazali, m. s. a. khiar, i. s. chairul, “evaluation of transformer core and winding conditions from sfra measurement results using statistical techniques for distribution transformers”, in proceedings of the ieee international power engineering and optimization conference (peoco2012), melaka, malaysia, pp. 6-7, june 2012. [28] a. d. y. argole: “insight into sfra responses & interpretations with regard to insulation system of transformer”, in proceedings of the ieee 10th international conference on the properties and applications of dielectric materials, bangalore, india, pp. 24-28, july 2012. [29] k. usha, j. joseph, s. usa, “location of faults in transformer winding using sfra”, in proceedings of the ieee 1st international conference on condition assessment techniques in electrical systems, 2013. [30] m. a. sathya, a. j. thomas, s. usa, “prediction of transformer winding displacement from frequency response characteristics”, in proceedings of the ieee 1st international conference on condition assessment techniques in electrical systems, 2013. [31] a. a. pandya, b. r. parekh, “interpretation of sweep frequency response analysis (sfra) traces for the open circuit and short circuit winding fault damages of the power transformer”, international journal of electrical power and energy systems, elsevier, vol. 62, pp. 890–896, 2014. [32] v. behjat, a. vahedi, a. setayeshmehr, h. borsi, e. gockenbach “sweep frequency response analysis for diagnosis of low level short circuit faults on the windings of power transformers: an experimental study”, international journal of electrical power and energy systems, elsevier, vol. 42, pp. 78–90, 2012. [33] p. m. nirgude, d. ashokraju, a. d. rajkumar, “application of numerical evaluation techniques for interpreting frequency response measurements in power transformers”, iet science, measurement & technology, vol.2, no. 5, pp. 275–285, september 2008. [34] g. m. kennedy, a. j. mcgrail, j. a. lapworth, “using cross-correlation coefficients to analyze transformer sweep frequency response analysis (sfra) traces”, ieee pes power africa 2007 conference and exposition johannesburg, south africa, 16-20 july2007. [35] m. f. m. yousof, c. ekanayake, t. k. saha, “study of transformer winding deformation by frequency response analysis”, in proceedings of the 2013 ieee power and energy society general meeting (pes), vancouver, bc, canada, 2013. [36] m. h. samimi, s. tenbohlen, a. a. s. akmal, h. mohseni, “effect of different connection schemes, terminating resistors and measurement impedances on the sensitivity of the fra method”, ieee transactions on power delivery, vol. 32, no. 4, pp. 1713–1720, august 2017. http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=57 http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.m.%20f.%20m.%20yousof.qt.&newsearch=true http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.c.%20ekanayake.qt.&newsearch=true http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.t.%20k.%20saha.qt.&newsearch=true http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=6657332 http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=4105888 http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=6657332 fault detection using fra in order to improve the aging model of power transformer 427 [37] m. h. samimi, s. tenbohlen, a. a. s. akmal, h. mohseni, “improving the numerical indices proposed for the fra interpretation by including the phase response”, international journal of electrical power and energy systems, elsevier, vol. 83, pp. 585–593, 2016. [38] h. l. willis, m. h. rashid, “electrical power equipment maintenance and testing”, secon edition, crc press, taylor & francis group, usa, 2009. microsoft word 03_1304-8743-1-le facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 35 47 doi: 10.2298/fuee1601035i short-circuit robustness assessment in power electronic modules for megawatt applications francesco iannuzzo corpe – center of reliable power electronics, department of energy technology, aalborg university, denmark diei – department of electrical and information engineering, university of cassino and southern lazio, italy abstract. in this paper, threats and opportunities in testing of megawatt power electronic modules under short circuit are presented and discussed, together with the introduction of some basic principles of non-destructive testing, a key technique to allow post-failure analysis. the non-destructive testing equipment at corpe, center of reliable power electronics, aalborg university, denmark, is presented and its features are discussed in detail, together with some relevant results. limitations of experimental analysis have also been addressed, together with the introduction of a mixed thermal-electrical simulation tool originally developed to study abnormal conditions and helping to predict very fast and dangerous thermal transient especially in case of worn out devices. the paper is concluded with an overview on present challenges in next-generation semiconductors for such high power ranges – basically silicon carbide – and new concepts for nondestructive testing of ultrafast power modules adopting such a technology. key words: igbt, robustness, reliability, short circuit, instabilities, sic power modules 1. introduction main renewable energy sources, e.g. photovoltaic (pv) and wind, require larger and larger initial investments, so that the breakeven point reaching risks to be considerably delayed. ten years seems to be a reasonable time for the next-generation power plants, but this interval is strictly connected to the expected useful lifetime of the generation plant, which presently is being pushed towards twenty years and over [1]. for this reason, reliability has become very crucial to save money and moving one step forward to make possible the big challenge of 100% renewable energy sources for the mankind. in the above time horizon, random failures cannot be neglected, and the scenario is still somehow chaotic: on the one hand, industries observe unexpected failures happening received october 7, 2015 corresponding author: francesco iannuzzo center of reliable power electronics, department of energy technology, aalborg university, pontoppidanstraede 101, 9220 aalborg, denmark (e-mail: r fia@et.aau.dk) 36 f. iannuzzo much earlier than the schedule maintenance; on the other hand, very often power electronic components are replaced in advance with respect to their useful life time, with obvious loss of money and useless downtime. a recent fp7 project (european framework programme 7) named reliawind [2] pointed out the main causes of failure and maintenance requests over a large number of operating wind turbines (about 300). referring to fig. 1, the first three groups of causes for wind turbine off times are, in descending order: 1) power module; 2) rotor module and 3) control. looking inside these groups, the scenario is even more critical from the power electronic standing point. in fact, the main power converter is responsible for more than 15 % of the overall causes of failure, which is even bigger than the fragile pitch system (14 %) and the main generator itself (13 %). the previous amount worsens considerably if one includes control faults in the overall power electronic failures amount. fig. 1 field experience of failure in wind turbines (normalized failure rate) [2]. the curve superimposed is the cumulative failure rate. the main reason for such a big lack of reliability is the strong unpredictability of many failures occurring in power electronics. in fact, referring to fig. 2, failures can be roughly classified into two categories: aging failures and catastrophic failures. looking at root causes, aging failures are basically due to wear out of electronic parts, mostly at package level, whereas catastrophic failures basically come from severe overloads or instabilities. along with root cause, though, it is interesting to point out the degree of predictability of such failures. whilst wear-out failures can be predicted in a good approximation, severe overloads occur intrinsically random and their prediction becomes quite hard. prediction of instabilities is even harder as they arise from a complex combination of several parameters, like: temperature, emi (electromagnetic interference), impedance variations, gate driving circuit behavior, etc. for this reason, different approaches must be used to face different failure mechanisms. short-circuit robustness perspectives in igbt power modules for megawatt applications 37 failures aging instabilitieswear‐out severe overloads catastrophic (abnormal events)kind root cause predictable somehow predictable unpredictablepredictability statistics control /  thermal design physics of failure (pof) coping approach fig. 2 classification of failures in power electronics based on root causes [3]. statistics is the key approach to cope with wear-out failures, especially when a large amount of field data is available, whereas physics-of-failure (pof) approach is the only possible when dealing with severe overloads and instabilities. as a matter of fact, the scenario becomes even more complicated in case of interaction, i.e. when severe overloads trigger instabilities. as will be discussed later on, in modern highperforming igbt power modules amplification mechanisms can take place in short circuit conditions leading to gate-side oscillations, which are extremely dangerous for the device safety. on top of that, such a kind of phenomenon occurs very fast and no intervention can be made at gate level to save the device. the aim of this article is to present and discuss modern techniques used for assessing the device response to short circuit events, especially with respect to instabilities. the remaining part of the paper is structured as follows: section 2 introduces the utilized test approach to study the device behavior during short circuit and some experimental results. section 3 shows and describes a novel simulation approach utilized by the research group led by the author to investigate the role of electro-thermal interactions in instabilities at chip-package level. some challenges about incoming technologies, namely silicon carbide mosfets will be pointed out in section 4, whereas section 5 will draw some conclusions and perspective work. 2. robustness testing typical devices for megawatt-scale inverters, like pv plants or wind turbines, are rated in the range of kilovolt and kiloampere. in fig. 3a, an infineon primepack™ igbt module is shown whose rating is 1.7 kv, 1.0 ka. in fig. 3b, a sample assembly of a power stack for wind turbine applications has been reported including seven devices on the same fluidcooled heat sink. non-destructive short-circuit testing principles have already been introduced in [4] for past-generation igbt modules, where basic principles and limitations of such a testing technique were pointed out. to test modern power devices, though, besides established characteristics like: protection switches to avoid explosion in case of failure, lowinductance busbar and single-shot capability, several additional requirements have to be strictly fulfilled at the same time: 38 f. iannuzzo a) b) fig. 3 a) a primepak™ 3 igbt module, which is widely used in wind power applications [5]; b) cad model of a power stack assembly for wind turbine inverters including fluid heat sink [6].  large current design, typically 5 ka and over;  even lower busbar stray inductance, according to commutation speed of lastgeneration igbt modules;  digital timing control;  personal-computer supervising system, in order to perform automatic and safe experiments;  overall geometry compatible with infrared camera shooting. it is worth to note that the above characteristics are quite hard to be obtained altogether, as many of them conflict with each other. for instance, to comply with a very low busbar inductance requirement is not easy because of the presence of protection switches in the circuit. fpga ir cam user pc driver driver x y hv supply scope busbar busbar series protection ic/6 vce dut e t h e t h rs232 cdc sync ic vgee g c a) b) c) d) fig. 4 a) principle schematic of the non-destructive tester in corpe [7]; b) detailed electrical schematic; c) picture of the equipment; d) detail of the heating/cooling system. short-circuit robustness perspectives in igbt power modules for megawatt applications 39 in fig. 4a, the principle schematic of the non-destructive tester (ndt) recently developed in corpe – center of reliable power electronics at aalborg university, denmark, has been reported. the equipment is operated in single-shot mode. the device under test (dut) is connected to a capacitor cdc providing the energy needed for the test through a busbar connection. a series protection is initially closed and opens right after the test, in order to break the circuit in case of failure occurrence. the dut is driven by a commercial igbt driver, which has been modified on purpose in order to deactivate its embedded short-circuit protection (desaturation detection). the dut driver and the series protection driver are synchronized accurately by means of a user-pc-configured fpgabased hardware, which also provides the trigger signals to the rest of the equipment. an oscilloscope (scope) is synchronized with the test sequence and acquires the electrical waveforms vce, vge and ic. in case an open device is available, the current flowing through each single section of the igbt module (ic/6) can be also measured. an infrared camera (ir cam) shoots at the device once it has been opened and opportunely treated for increasing emissivity in order to monitor possible thermal imbalances occurring during the tests. the mentioned user pc (personal computer) also provides testing parameter setting and waveform processing. in fig. 4b, a detailed electrical schematic has been reported. the capacitor cdc has been obtained by putting five capacitors in parallel to reduce the stray inductance. the series protection has been made with two large igbt modules in parallel whose total current capability is 6 ka. a second loop is also present in the schematic of fig. 4b, where a parallel protection made up of two further igbt modules has been included in order to support the main (series) protection in zeroing the current through the dut. the parallel protection is fired contemporarily to the series one. the emitters of the parallel protection igbt are connected to a negative voltage, sustained by three further capacitors cneg, in order to enhance the overall effect of the protection, as demonstrated in [8]. to avoid negative voltage on the dut, a set of five schottky diodes has been put in series to the dut. fig. 4c depicts the experimental apparatus, where every part described in fig. 4b can be easily recognized. the geometry has been designed in order to be able to shoot at the dut from close distance from the top by means of an infrared camera. the apparatus also includes a cooling/heating plate as shown in fig. 4d, ranging from -40 °c to + 250 °c. of course, such an extended range can be only achieved by proper thermal and humidity isolation. at present, the apparatus can only be operated from room temperature to 150 °c. the ndt can be used for a number of different tests. fig. 5a shows a typical shortcircuit commutation performed on the igbt module of fig. 3a under the following electrical and thermal conditions: dc-link voltage vdc = 700v, gate voltage vge = 14v, tshort circuit = 10ms, ttest = 25°c. an undershoot and an overshoot corresponding to the current rise and fall can be respectively observed on the collector voltage waveform, which are caused by the circuit stray inductance. in the test of fig. 5a, the measured stray inductance was about 40nh. in the same figure a slight decrease in the current waveform can be also noted which is typical of device heating during the test. the same equipment can be profitably used for assessing the stability behavior of experimental prototypes. in fig. 5b an unstable behavior has been observed on a laboratory-constructed module, whose layout has been designed in order to optimize the commutation energy. in the test, the external circuit inductance has been increased in order to simulate electrical conditions much closer to real short circuit events occurring between two inverter output phases. the waveforms evidence a limit-of-stability behavior, in which the gate voltage is affected by 40 f. iannuzzo permanent oscillations. synchronous oscillations are observed on the collector voltage as well, evidencing a strong amplification behavior in these extreme conditions. in such a case, the ndt has been profitably used to investigate the unstable behavior step by step, increasing the on-time interval with steps of few tens of nanoseconds and firing the protections right after the device turn off, in order to remove the power in case of possible failures. the procedure would have immediately been stopped in case of appearance of any kind of instability, so that the device under test could be saved from possible ruptures [9]. one more way to profitably exploit the ndt is to perform synchronized infrared acquisitions during short circuit. in such a case, the sample has to be prepared by removing the external enclosure and the silicone gel the module is internally filled with. a) b) fig. 5 short circuit experiments performed on a test module at 700v. a) safe commutation; b) commutation evidencing gate oscillations typical of unstable behavior. collector voltage: 200 v/div; gate voltage: 5 v/div; collector current: a) 1 ka/div b) 2 ka/div. short-circuit robustness perspectives in igbt power modules for megawatt applications 41 in fig. 6a, a picture of an experimental open module is reported, in which some nonrelevant details of the internal layout have been blurred. on its surface, six sections can be easily recognized, each of which has got two igbt chips (the big ones) and two freewheeling diodes (the small ones). the module has been painted with a few-micrometersthick, black-paint layer in order to enhance the emissivity, which is necessary to improve the ir camera performance. the ir camera shooting instant is set by the fpga hardware described in fig. 4a, according to the parameters set from the user personal computer prior to the test. fig. 6b reports an ir image acquired during a short-circuit test performed at room temperature troom = 25°c. the six squares corresponding to the igbt chips can be recognized, whose temperature is significantly higher than the rest of the module. a very meaningful result is that an evident temperature imbalance can be observed in the experiment of fig. 6b, pointing out how much relevant is the internal layout in the current balancing in abnormal (in particular, short-circuit) conditions. a) b) fig. 6 a) an experimental black-painted open module developed for testing. the non-relevant parts of the layout have been blurred; b) infrared shot of the same module taken during a short circuit test. 42 f. iannuzzo a short summary can be drawn from the observed results. instabilities in igbt power modules have been observed on laboratory prototypes in several cases. according to [7], some conditions to trigger such instabilities are:  non-negligible circuit stray inductance. it has been observed that the inductance involved in the short-circuit loop worsens the stability of the device, showing some oscillations. such a condition is very typical of phase-to-phase short circuit in industrial inverters.  rf amplifying behavior. the device exhibits an amplifying behavior so that an oscillation on the gate side produces a synchronous oscillation on the collector side.  module internal layout. it is very difficult to design a module whose layout exhibit good current balance during abnormal conditions, like short-circuit. ir tests evidenced a significant heating imbalance among the different chips. 3. modelling abnormal conditions in the previous section, a testing approach has been discussed in detail including ir camera shooting, pointing out its key benefits. nevertheless, there are a number of practical limitations arising from the used technique which considerably limit the feasibility of some extreme tests, namely:  gate-voltage instabilities are very dangerous, as the overvoltage on the gate terminal can provoke a dielectric breakdown of the gate oxide. this means that no longer investigations are possible in case a gate instability takes place;  the thermal evolution of the system, in particular of the igbt dies, is significantly slowed down by the thermal inertia of the metal layer on top of the chips and also of the black paint. this means that, even if an uneven current sharing can confidently be observed, the real junction temperature in a given chip is not measurable;  the effects of the stray elements of the module internal layout are not easily measurable, as new prototypes have to be built up to study a different configuration. the above bullets lead obviously to the need for an accurate and reliable simulation tool. as a matter of fact, such a tool necessarily has to include multi-domain physics, as short circuit behavior strongly depends both on electrical and thermal aspects. in fact, the igbt saturation current is significantly affected by the thermal evolution (i.e. it decreases with time because the device warms up very fast) and the thermal evolution is directly dependent on the electrical power generated in the semiconductor junction. many simulation tools have been presented over the last two decades, with various trade-offs between accuracy and time efficiency [10]–[16], but a still quite unexploited approach is to connect a finite-element method (fem) simulator of the thermal part to a light and versatile model on the electrical part. this co-simulation approach has been possible thanks to a sophisticate matlab®-based approach introduced recently in [17] that interfaces the ansys icepak world [18] with the orcad pspice one [19]. the electrical part implements a well-established igbt model for pspice [20] with a very good trade-off between accuracy and simulation speed. fig. 7a qualitatively shows the performance of such a mixed approach. short-circuit experimental waveforms obtained at 700v, room temperature, have been compared with the one obtained thanks to the discussed co-simulation approach. the simulation waveforms are in excellent agreement with the short-circuit robustness perspectives in igbt power modules for megawatt applications 43 experimental one. in particular, the hard-to-predict current waveform is very accurately described, which is strongly dependent on the thermal evolution. what’s more, the simulation helps also in detecting possible measurement mistakes, like the non-zero current at the end of the test of fig. 7a, which is due to a non-ideal behavior of the adopted current probe. the fem part of the discussed co-simulation approach gives even more interesting results on the thermal aspects: fig. 7b shows a simulation output of a short circuit in presence of a reconstruction phenomenon [21] of the device metal surface. the device warms up much more underneath the bond wire attach area because of the non-negligible lateral voltage drop across the degraded chip metallization. moreover, a direct consequence is that the on-state voltage drop is considerably increased and this easily ends up in current imbalance phenomena. a) b) fig. 7 a) comparison between short circuit experimental and simulated waveforms by means of the mixed ansys-pspice approach introduced in [17]; b) significant shots of the simulated sequence. time instants: 4s, 10s, 12s and 15s. temperature scale: 20°c – 250°c. 4. silicon carbide testing requirements on the one hand, silicon is nowadays a well-established technology and its reliability and robustness issues are widely shared in the power electronics community. on the other hand, new and promising technologies have appeared in the last ten years enabling the efficient and relatively cheap growth of new semiconductor materials, like silicon carbide (sic) and gallium nitride (gan). those materials exhibit outstanding figures from the power electronics’ standpoint, as they combine much higher critical electric field with higher mobility and higher thermal conductivity with respect to traditional silicon technology. such characteristics lead to significantly better performances, especially in terms of switching speed, which is key for increasing operating frequency and, in turn, reducing converters’ weight, volume and cost. said new materials, though, open once again typical challenges of non-mature technologies, i.e. reliability estimation, lifetime prediction and, not least, robustness. 44 f. iannuzzo as matter of fact, sic technology is very promising from the robustness point of view as many recent works demonstrated outstanding performances of jfet discrete devices [22]–[24] and mosfet discrete devices [25]–[27]. nevertheless, robustness of sic power modules is more challenging with respect to traditional silicon, for three main reasons: 1. faster switching speed opens new problems in terms of current balancing in transients, both at normal and abnormal conditions; 2. intrinsic higher operating temperature capability complicates significantly the thermal balancing; 3. since chip area of present sic technology node is limited by yield constraints at foundry level, more chips have to be put in parallel to achieve the same current capability with respect to silicon igbts. a) b) fig. 8 a) round-shaped busbar design for ultra-low stray inductance testing [28]. simulation of current density is reported in arbitrary units; b) picture of the final assembly of the non-destructive tester ndt2 at corpe, center of reliable power electronics, aalborg university, denmark. the considerable limitations pointed out above require an extremely careful design at both layout level and circuit level, therefore: internal stray parameters need to be accurately equalized to reduce current imbalance as much as possible; circuit stray parameters – especially stray inductance – need to be further minimized to reduce dangerous voltage overshoots, typical of turn-off commutations, which could lead to a number of unstable secondary phenomena. of course, circuit stray parameters need to be even more minimized when designing a testing apparatus for short-circuit assessment, where 5x 10x larger currents have to be switched on and off in times comparable to normal switching. this strict requirement calls for the adoption of special busbar design concepts, including negative coupling inductance and uniform current sharing. in fact, one of the major challenges in large-current busbar designs is that wide parallel current flowlines lead to a significant auto-inductance which cannot be reduced below an intrinsic minimum. a special design geometry showing negative coupling inductance between adjacent current paths helps in further reducing the inductance below the limit. concerning the uniform current sharing, cad simulations (ansys q3d [29]) should be used to ensure that current spreads uniformly instead of focusing on a preferred short-circuit robustness perspectives in igbt power modules for megawatt applications 45 path. this latter effect would eventually increase the equivalent stray inductance as well. a study including all the optimization concepts discussed so far has been presented recently [28], where an innovative cad-designed, round-shaped busbar to achieve a very low inductance (few nanohenries) has been successfully developed. in fig. 8a, a q3d simulation from that paper evidencing the uniform current distribution inside the designed busbar is shown. current moves from the periphery (where capacitors are placed) to the center of the circle (where the dut is connected) and vice versa through the below layer of the busbar. fig. 8b depicts the constructed ndt2 setup, where a round professionallymade busbar can be recognized and ten massive capacitors are placed at the periphery of it. with reference to the schematic of ndt of fig. 4b, the series protection switches have been increased to four; they can be recognized by the four groups of six bolts each laying at about half radius distance from the center. a little closer to the center, ten schottky diodes can be recognized as well. the parallel protection loop is made up of another similar round busbar which will be installed vertically at an angle of 90 degrees with respect to the series one and connected to the dut as well. for the sake of clarity, the parallel protection busbar has not been included in the picture. 5. conclusion and perspectives big efforts are being done in power electronics nowadays, particularly driven by renewables, like photovoltaic and wind power generation. in this scenario, robustness validation is a non-negligible part of confident reliability evaluation, especially regarding power electronic modules, which ends up in lowering costs and enabling larger and larger investments. in this paper, the state of the art about one of the most important robustness assessments, i.e. with respect to short circuit, has been discussed for power modules in the range of megawatt, where challenges are significantly bigger than in the discrete components’ world. the non-destructive testing technique has been presented and discussed in deep details, in order to share best practices and threats. in particular, the important of accurate time synchronization, physical layout, overall stray inductance, current sharing problems have been presented, providing some useful solutions. the advent of new semiconductors in this power range, in particular silicon carbide, is definitely paving the way to a new revolution in terms of size, cost and efficiency. on the other hand, it challenges robustness expert from new and more complex point of views, basically related to extremely high gradients of current and voltage during commutations, ending up in need for non-conventional design of the testing setup. the paper concludes introducing new concepts for ultra-low inductance design to be adopted for such technologies. work on the way of robustness assessment of so promising technologies is still in progress. acknowledgement: the paper is a part of the research done within the corpe framework obel starprofessorship project granted by the funding institution “det obelske familiefond”, denmark. 46 f. iannuzzo references [1] h. wang, m. liserre, and f. blaabjerg, “toward reliable power electronics: challenges, design tools, and opportunities”, ieee ind. electron. mag., vol. 7, no. 2, pp. 17–26, jun. 2013. [2] m. wilkinson, “reliawind, report on wind turbine reliability profiles – field data reliability analysis, 2011”. european commission fp7, 2009. [3] f. iannuzzo, c. abbate, and g. busatto, “instabilities in silicon power devices: a review of failure mechanisms in modern power devices”, ieee ind. electron. mag., vol. 8, no. 3, pp. 28–39, sep. 2014. [4] g. busatto, b. cascone, l. fratelli, m. balsamo, f. iannuzzo, and f. velardi, “non-destructive high temperature characterisation of high-voltage igbts”, microelectron. reliab., vol. 42, no. 9–11, pp. 1635–1640, 2002. [5] “infineon gmbh”, infineon gmbh. [online]. available: http://www.infineon.com. [6] “mentor graphics®”. [online]. available: http://www.mentor.com. [7] r. wu, p. diaz reigosa, f. iannuzzo, l. smirnova, h. wang, and f. blaabjerg, “study on oscillations during short circuit of mw-scale igbt power modules by means of a 6-ka/1.1-kv nondestructive testing system”, ieee j. emerg. sel. top. power electron., vol. 3, no. 3, pp. 756–765, sep. 2015. [8] c. abbate, g. busatto, and f. iannuzzo, “igbt rbsoa non-destructive testing methods: analysis and discussion”, microelectron. reliab., vol. 50, no. 9–11, pp. 1731–1737, 2010. [9] p. d. reigosa, r. wu, f. iannuzzo, and f. blaabjerg, “robustness of mw-level igbt modules against gate oscillations under short circuit events”, microelectron. reliab., jul. 2015. [10] v. székely, a. poppe, m. rencz, a. csendes, and a. páhi, “electro-thermal simulation: a realization by simultaneous iteration”, microelectron. j., vol. 28, no. 3, pp. 247–262, mar. 1997. [11] m. riccio, m. carli, l. rossi, a. irace, g. breglio, and p. spirito, “compact electro-thermal modeling and simulation of large area multicellular trench-igbt”, 2010, pp. 379–382. [12] a. raciti, d. cristaldi, g. greco, g. vinci, and g. bazzano, “electro-thermal pspice modeling and simulation of power modules”, ieee trans. ind. electron., pp. 1–1, 2015. [13] a. bonsbaine, g. trigkidis, and n. benamrouche, “an integrated electro-thermal model of igbt devices (experimental validation)”, in 2009 proceedings of the 44th international universities power engineering conference (upec), 2009, pp. 1–5. [14] a. bryant, n.-a. parker-allotey, d. hamilton, i. swan, p. mawby, t. ueta, t. nishijima, and k. hamada, “a fast loss and temperature simulation method for power converters, part i: electrothermal modeling and validation”, ieee trans. power electron., vol. 27, no. 1, pp. 248–257, jan. 2012. [15] a. castellazzi, e. batista, m. ciappa, j.-m. dienot, m. mermet-guyennet, and w. fichtner, “full electrothermal model of a 6.5kv field-stop igbt module”, in proceedings of the ieee power electronics specialists conference, pesc 2008, 2008, pp. 392–397. [16] k. el boubkari, s. azzopardi, l. theolier, j. y. deletage, and e. woirgard, “2d finite elements electrothermal modeling for igbt: uni and multicellular approach”, in proceedings of the 2012 13th international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 2012, pp. 1/5–5/5. [17] r. wu, f. iannuzzo, h. wang, and f. blaabjerg, “an icepak-pspice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of igbt modules under shortcircuit”, 2014, pp. 5502–5509. [18] “ansys® icepak, release 15.0, user analysis guide, ansys, inc.” . [19] “orcadtm”, orcadtm pspice®. [online]. available: http://www.orcad.com. [20] f. iannuzzo and g. busatto, “physical cad model for high-voltage igbts based on lumped-charge approach”, ieee trans. power electron., vol. 19, no. 4, pp. 885–893, jul. 2004. [21] m. ciappa, “selected failure mechanisms of modern power modules”, microelectron. reliab., vol. 42, no. 4–5, pp. 653–667, apr. 2002. [22] c. abbate, g. busatto, and f. iannuzzo, “operation of sic normally-off jfet at the edges of its safe operating area”, microelectron. reliab., vol. 51, no. 9–11, pp. 1767–1772, 2011. [23] m. berkani, s. lefebvre, and z. khatir, “saturation current and on-resistance correlation during repetitive short-circuit conditions on sic jfet transistors”, ieee trans. power electron., vol. 28, no. 2, pp. 621–624, 2013. [24] x. huang, g. wang, y. li, a. q. huang, and b. j. baliga, “short-circuit capability of 1200v sic mosfet and jfet for fault protection”, in proceedings of the ieee applied power electronics conference and exposition apec, 2013, pp. 197–200. short-circuit robustness perspectives in igbt power modules for megawatt applications 47 [25] a. castellazzi, a. fayyaz, l. yang, m. riccio, and a. irace, “short-circuit robustness of sic power mosfets: experimental analysis”, in proceedings of the international symposium on power semiconductor devices and ics, 2014, pp. 71–74. [26] z. chen, y. yao, m. danilovic, and d. boroyevich, “performance evaluation of sic power mosfets for high-temperature applications”, in proceedings of the 15th international power electronics and motion control conference (epe/pemc), 2012, pp. ds1a.8–1–ds1a.8–9. [27] t. shoji, a. soeno, h. toguchi, s. aoi, y. watanabe, and h. tadano, “theoretical analysis of shortcircuit capability of sic power mosfets”, jpn. j. appl. phys., vol. 54, no. 4, 2015. [28] l. smirnova, j. pyrhonen, f. iannuzzo, rui wu, and f. blaabjerg, “round busbar concept for 30 nh, 1.7 kv, 10 ka igbt non-destructive short-circuit tester”, 2014, pp. 1–9. [29] “ansys® q3d extractor, ansys inc.”, ansys q3d extractor. [online]. available: http://www.ansys.com/ products/simulation+technology/electronics/signal+integrity/ansys+q3d+extractor. << /ascii85encodepages false /allowtransparency false /autopositionepsfiles true /autorotatepages /none /binding /left /calgrayprofile (dot gain 20%) /calrgbprofile (srgb iec61966-2.1) /calcmykprofile (u.s. web coated \050swop\051 v2) /srgbprofile (srgb iec61966-2.1) /cannotembedfontpolicy /error /compatibilitylevel 1.4 /compressobjects /tags /compresspages true /convertimagestoindexed true /passthroughjpegimages true /createjobticket false /defaultrenderingintent /default /detectblends true /detectcurves 0.0000 /colorconversionstrategy /cmyk /dothumbnails false /embedallfonts true /embedopentype false /parseiccprofilesincomments true /embedjoboptions true /dscreportinglevel 0 /emitdscwarnings false /endpage -1 /imagememory 1048576 /lockdistillerparams false /maxsubsetpct 100 /optimize true /opm 1 /parsedsccomments true /parsedsccommentsfordocinfo true /preservecopypage true /preservedicmykvalues true /preserveepsinfo true /preserveflatness true /preservehalftoneinfo false /preserveopicomments true /preserveoverprintsettings true /startpage 1 /subsetfonts true /transferfunctioninfo /apply /ucrandbginfo /preserve /useprologue false /colorsettingsfile () /alwaysembed [ true ] /neverembed [ true ] /antialiascolorimages false /cropcolorimages true /colorimageminresolution 300 /colorimageminresolutionpolicy /ok /downsamplecolorimages true /colorimagedownsampletype /bicubic /colorimageresolution 300 /colorimagedepth -1 /colorimagemindownsampledepth 1 /colorimagedownsamplethreshold 1.50000 /encodecolorimages true /colorimagefilter /dctencode /autofiltercolorimages true /colorimageautofilterstrategy /jpeg /coloracsimagedict << /qfactor 0.15 /hsamples [1 1 1 1] /vsamples [1 1 1 1] >> /colorimagedict << /qfactor 0.15 /hsamples [1 1 1 1] /vsamples [1 1 1 1] >> /jpeg2000coloracsimagedict << /tilewidth 256 /tileheight 256 /quality 30 >> /jpeg2000colorimagedict << /tilewidth 256 /tileheight 256 /quality 30 >> /antialiasgrayimages false /cropgrayimages true /grayimageminresolution 300 /grayimageminresolutionpolicy /ok /downsamplegrayimages true /grayimagedownsampletype /bicubic /grayimageresolution 300 /grayimagedepth -1 /grayimagemindownsampledepth 2 /grayimagedownsamplethreshold 1.50000 /encodegrayimages true /grayimagefilter /dctencode /autofiltergrayimages true /grayimageautofilterstrategy /jpeg /grayacsimagedict << /qfactor 0.15 /hsamples [1 1 1 1] /vsamples [1 1 1 1] >> /grayimagedict << /qfactor 0.15 /hsamples [1 1 1 1] /vsamples [1 1 1 1] >> /jpeg2000grayacsimagedict << /tilewidth 256 /tileheight 256 /quality 30 >> /jpeg2000grayimagedict << /tilewidth 256 /tileheight 256 /quality 30 >> /antialiasmonoimages false /cropmonoimages true /monoimageminresolution 1200 /monoimageminresolutionpolicy /ok /downsamplemonoimages true /monoimagedownsampletype /bicubic /monoimageresolution 1200 /monoimagedepth -1 /monoimagedownsamplethreshold 1.50000 /encodemonoimages true /monoimagefilter /ccittfaxencode /monoimagedict << /k -1 >> /allowpsxobjects false /checkcompliance [ /none ] /pdfx1acheck false /pdfx3check false /pdfxcompliantpdfonly false /pdfxnotrimboxerror true /pdfxtrimboxtomediaboxoffset [ 0.00000 0.00000 0.00000 0.00000 ] /pdfxsetbleedboxtomediabox true /pdfxbleedboxtotrimboxoffset [ 0.00000 0.00000 0.00000 0.00000 ] /pdfxoutputintentprofile () /pdfxoutputconditionidentifier () /pdfxoutputcondition () /pdfxregistryname () /pdfxtrapped /false /createjdffile false /description << /ara /bgr /chs /cht /cze /dan /deu /esp /eti /fra /gre /heb /hrv (za stvaranje adobe pdf dokumenata najpogodnijih za visokokvalitetni ispis prije tiskanja koristite ove postavke. stvoreni pdf dokumenti mogu se otvoriti acrobat i adobe reader 5.0 i kasnijim verzijama.) /hun /ita /jpn /kor /lth /lvi /nld (gebruik deze instellingen om adobe pdf-documenten te maken die zijn geoptimaliseerd voor prepress-afdrukken van hoge kwaliteit. de gemaakte pdf-documenten kunnen worden geopend met acrobat en adobe reader 5.0 en hoger.) /nor /pol /ptb /rum /rus /sky /slv /suo /sve /tur /ukr /enu (use these settings to create adobe pdf documents best suited for high-quality prepress printing. created pdf documents can be opened with acrobat and adobe reader 5.0 and later.) >> /namespace [ (adobe) (common) (1.0) ] /othernamespaces [ << /asreaderspreads false /cropimagestoframes true /errorcontrol /warnandcontinue /flattenerignorespreadoverrides false /includeguidesgrids false /includenonprinting false /includeslug false /namespace [ (adobe) (indesign) (4.0) ] /omitplacedbitmaps false /omitplacedeps false /omitplacedpdf false /simulateoverprint /legacy >> << /addbleedmarks false /addcolorbars false /addcropmarks false /addpageinfo false /addregmarks false /convertcolors /converttocmyk /destinationprofilename () /destinationprofileselector /documentcmyk /downsample16bitimages true /flattenerpreset << /presetselector /mediumresolution >> /formelements false /generatestructure false /includebookmarks false /includehyperlinks false /includeinteractive false /includelayers false /includeprofiles false /multimediahandling /useobjectsettings /namespace [ (adobe) (creativesuite) (2.0) ] /pdfxoutputintentprofileselector /documentcmyk /preserveediting true /untaggedcmykhandling /leaveuntagged /untaggedrgbhandling /usedocumentprofile /usedocumentbleed false >> ] >> setdistillerparams << /hwresolution [2400 2400] /pagesize [612.000 792.000] >> setpagedevice facta universitatis series: electronics and energetics vol. 32, no 4, december 2019, pp. 539-554 https://doi.org/10.2298/fuee1904539p © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd on the node ordering of progressive polynomial approximation for the sensor linearization  aneta prijić, aleksandar ilić, zoran prijić, emilija živanović, branislav randjelović university of niš, faculty of electronic engineering, niš, serbia abstract. many sensors exhibit nonlinear dependence between their input and output variables and specific techniques are often applied for the linearization of their transfer characteristics. some of them include additional analog circuits, while the others are based on different numerical procedures. one commonly used software solution is progressive polynomial approximation. this method for sensor transfer function linearization shows strong dependence on the order of selected nodes in the linearization vector. there are several modifications of this method which enhance its effectiveness but require extensive computational time. this paper proposes the methodology that shows improvement over progressive polynomial approximation without additional increase of complexity. it concerns the order of linearization nodes in linearization vector. the optimal order of nodes is determined on the basis of sensor transfer function concavity. the proposed methodology is compared to the previously reported methods on a set of analytical functions. it is then implemented in the temperature measurement system using a set of thermistors with negative temperature coefficients. it is shown that its implementation in the low-cost microcontrollers integrated into the nodes of reconfigurable sensor networks is justified. key words: sensor linearization, progressive polynomial approximation, reconfigurable sensor networks, ntc thermistor 1. introduction transfer functions of sensors used in measurement systems usually do not have linear dependence between input and output variables. in addition, transfer functions often change with time. for these reasons, measurement systems based on the sensors exhibit various errors such as offset, gain, hysteresis, cross-sensitivity, drift, and non-linearity [1], [2]. in order to achieve reliable measurement, these errors should be compensated. one approach is to use additional analog circuits to condition sensors output signal [3], [4], [5]. however, analog compensation is not always appropriate for sensors integrated received february 5, 2019; received in revised form july 1, 2019 corresponding author: aneta prijić faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: aneta.prijic@elfak.ni.ac.rs)  540 a. prijić, a. ilić, z. prijić, e. živanović, b. randjelović into reconfigurable sensor networks [1], [6], [7]. a more flexible solution is to convert sensor output into the digital domain, where various numerical linearization methods may be applied in the form of compensation algorithms. these methods rely on a set of correction functions applied on a so-called linearization vector composed of linearization nodes. the effectiveness of the linearization method is evaluated on the basis of the number of nodes required to reduce non-linearity below a specific value, computation time, and implementation complexity. the simplest linearization method is based on a look-up table (lut) which is also the fastest one. however, to obtain a high accuracy of the estimated input value, a high number of linearization nodes should be implemented in the lut, making it memory consuming. to reduce memory requirement, a sparse lut can be combined with an interpolation method [8]. a simple method is piece-wise linear interpolation which connects each two adjacent lut values with an appropriate linear function. this type of interpolation can be also used for linearization of the whole transfer function. for n linearization nodes, sensors inverse transfer function will be represented by n−1 first order polynomials [9]. the main disadvantage of this method is a high number of nodes required for the linearization of highly nonlinear functions. this implies either a large memory requirement or a slow response time of the system [8]. more advanced methods are lagrange, newton [10] and spline [11] interpolations. however, lagrange interpolation suffers from overfitting effect for polynomials of higher degree and it is generally not applicable to highly nonlinear sensors [10], [12]. the newton method is more flexible and efficient when additional linearization nodes are introduced, but it is primarily applied for equidistant nodes [13]. on the other hand, spline interpolation is effective, but it comes at high implementation costs [14]. more effective and more commonly used methods are progressive polynomial approximation (ppa) [15], [16] and linearization methods based on the artificial neural networks (ann) [17], [18]. the effectiveness of the ppa method, besides the linearization nodes number, depends on the node ordering in the linearization vector. results obtained using the same compensation algorithm, but with the different order of nodes (permutation) [19], may vary between almost perfect in some cases, to even increased non-linearity in the other. in the case of the ann method, effectiveness depends on the neural network topology and the time needed for its training. this paper proposes the methodology that improves the accuracy of the ppa while keeping its simplicity. theoretical background, a summary of ppa, and an overview of its modifications are presented in section 2. section 3 contains an analysis of the ppa method effectiveness considering different permutations of the linearization vector for four different functions. two of these functions are convex and two concave. this is done in order to elaborate on the idea that the optimal order of nodes in the linearization vector is dependent on the transfer function shape. in such a sense, an extensive computation time needed to accomplish the desired linearity by analysis of all permutations may be avoided. experimental support of presented numerical results is given in section 4, using negative temperature coefficient (ntc) thermistors as sensors. on the node ordering of progressive polynomial approximation for the sensor linearization 541 2. linearization methods 2.1. underlying theory the transfer function of sensors is usually expressed as , where x is sensor input and y is sensor output [20]. the linearization method calculates the desired output value , using the workflow depicted in fig. 1. sensor output is first digitized, using an analog-to-digital converter (adc), and then the linearization algorithm is applied. obtained output value should vary linearly with the sensor input, i.e. , where k is the gain and n (usually 0) is the offset of the desired transfer function [1]. all operations are performed by a microcontroller, which is a part of the reconfigurable sensor node. fig. 1 workflow of a sensor linearization process there are two types of linearization methods, as illustrated in fig. 2. the first involves an estimation of the sensor transfer function and subsequent numerical determination of sensor inverse transfer function which is used to obtain the estimated input value . the linearized output value is . methods of the second type modify sensors output y using a correction function , so the linearized output is calculated as . estimated input value, in this case, is calculated as . fig. 2 linearization of a sensor output for two distinct methods. the linearization node is a pair of two values: input x and corresponding output y. values are determined experimentally by applying a known stimulus at the sensor input and measuring the value of its output. input values are usually chosen equidistantly, starting at the minimal input that a sensor can detect, and ending at the full-scale. nodes are then ordered to form the linearization vector. linearization coefficients, implemented into the correction function , are determined using the linearization vector, and then stored in the memory of a microcontroller. on each measurement, these coefficients are used to calculate the linear output value of the sensor. 542 a. prijić, a. ilić, z. prijić, e. živanović, b. randjelović the effectiveness of linearization is evaluated using relative non-linearity [21]: , (1) where is full-scale input and is the maximum deviation of the real input from the ideal transfer characteristic. due to the nature of the linearization algorithm, nonlinearity will be equal to zero for any of the linearization nodes if a quantization error introduced by ad conversion is neglected. therefore, additional measurements need to be performed to form a set of ne evaluation nodes and calculate the maximum deviation as: (| |) for i=1,…ne, (2) where is the applied input value and is the corresponding output value. 2.2. progressive polynomial approximation (ppa) calculation of the correction function in ppa is a successive process [15]. for each linearization node, new correction function, denoted as , is defined. therefore, i-th function corrects the non-linearity around the i-th node, while keeping the corrections introduced by the previously defined functions. the final correction function is the one defined for the last node. in order to calculate correction function, linear output value ti at each node should be defined as: for i = 1, . . . , n. (3) these values are then used to calculate linearization coefficients for correction functions. the first correction function is defined as: (4) where is the linearization coefficient calculated for the first linearization node: . (5) thus, adds the value to the sensor output, eliminating the offset (if present). the correction function at i-th node is defined as: ∏ for i = 2, . . . , n (6) and the linearization coefficient is calculated as: ∏ ( ) for i = 2, . . . , n. (7) these correction functions eliminate the gain error and successively minimize the transfer function non-linearity. since the final correction function includes all the linearization nodes, it will output the desired value for any of these nodes while between them linearized output will deviate from the ideal one to some extent. on the node ordering of progressive polynomial approximation for the sensor linearization 543 2.3. modifications of the ppa method in ppa, the first two nodes in the linearization vector are chosen from the ends of a sensor range, thus eliminating the offset and gain errors [15]. then, each new node is added halfway between the previous two. when the linearization vector ordered in that way is used, achieved results are not optimal, but large non-linearity is avoided. note that nodes are not necessarily equidistant. the main advantage of ppa lies in its simplicity, so it does not require intensive time-consuming operations. this makes it particularly suitable for the implementation in reconfigurable sensor networks. improved progressive polynomial approximation (imppa) is the method based on permutations of nodes in the initial linearization vector. each permutation is tested in order to find the best one [19]. to reduce the number of arithmetic operations, imppa does not test all possible permutations of the initial vector. rather, it fixes the first node from the beginning of the sensor range as the first, the node from the end of the range as the second, and then permutes the remaining ones. the effectiveness of each permutation is determined by the non-linearity obtained at nodes which are inserted between the nodes of the linearization vector. a major drawback of this method is increased implementation costs in terms of the complexity and computation time. it should be noted that this method finds the optimal permutation of the given linearization vector for equidistant nodes. the method can be further improved if linearization vector with non-equidistant nodes is used. a probability density function is used to improve ppa, as presented in [22], [23]. this approach proposes an accumulation of linearization nodes in the part of a transfer function that will be used most commonly during a sensor lifetime. this can significantly improve measurement system accuracy in some cases, but the problem of the further ordering of the selected nodes still remains unsolved. a different linearization method inspired by ppa, called modified progressive polynomial approximation (mppa), is addressed in [24]. methodology for selection of the nodes which does not consider their order in the linearization vector is introduced. the larger set of equidistant nodes is formed first. the linearization vector is not predefined, but it is populated at each step by the node from the original set at which current linearized function deviates most from the linear one. consequently, selected nodes in the linearization vector are not equidistant. 3. proposed methodology proposed modification of the ppa method concerns the order of nodes in the linearization vector to obtain the desired transfer function linearity without increasing the algorithm complexity. several analytic expressions commonly used to model sensors transfer functions are analyzed. in order to make a comparison of the results, transfer functions are normalized before the linearization methodology was applied. both, input (argument) and output (function value) are normalized to range [0, 1]. if x m is sensor input and y m is sensor output, normalized input and output values are calculated using the following equations: , (8) , (9) 544 a. prijić, a. ilić, z. prijić, e. živanović, b. randjelović where and are minimum and full range input values, while and are the corresponding output values. the initial linearization vector ti is formed as a set of n equidistant nodes starting from the beginning of the sensors range. it is expressed as: [ ], (10) or, using shorthand notation: [ ]. permutations of the linearization vector are denoted as , i = 1, 2, . . . , n − 1!. 3.1. convex functions the ppa linearization methodology is applied to an exponential function: ⁄ (11) where p is parameter used to adjust its non-linearity (02k). the vector x is the vector of the transform domain coefficients, i.e.: .x x  (2) different transform domains can be used: discrete fourier transform domain – dft [3],[6],[12], discrete cosine transform domain – dct [3],[6],[12],[46], wavelet domain, hermite transform domain [48]-[55], time-frequency domain [56], etc. apart from the sparsity, another important property is incoherence, which enables successful signal reconstruction from a small set of acquired samples. namely, the measurement matrix ω should be incoherent with the transform domain matrix  . the coherence between the two matrices represents the highest correlation between any two column/row vectors of the matrices. a measure of correlation between the two matrices is defined as follows [11],[12]: 1, ( ) max , ,k j k j n n      (3) where n is a signal length, ωk and j are row and column vectors of the matrices ω and  , respectively. the coherence takes values from the interval: 1 ( ) .n  (4) the value of the coherence is greater if the two matrices are more correlated. in the cs scenario the value of the coherence should be as low as possible. the system of equations (1) can be written as follows: 1 1,m m n ny a x   (5) where a denotes cs matrix: 1a  . the system is under-determined since it has m equations and n unknowns. therefore, the optimization techniques are used in order to find an optimal solution for this system. optimal solution is related to the signal sparsity – the sparsest solution is the optimal one. there are a number of algorithms used to obtain a sparse solution of the system. some of them are based on the convex optimization [1]-[7],[11],[12]: basis pursuit, dantzig selector, and gradient-based algorithms. they provide high reconstruction accuracy, but they are computationally demanding. the commonly used and less computationally demanding are greedy algorithms – matching pursuit and orthogonal matching pursuit [1]-[6],[8],[12]. also, recently proposed threshold based algorithms provide high reconstruction accuracy with low computational complexity: (e.g. iterative hard thresholding iht, iterative soft thresholding ist) [1],[6],[13], automated threshold based iterative solution [12],[57], adaptive gradient-based algorithm, [3],[12],[26],[27], etc. 480 a. draganić, i. orović, s. stanković 3. compressive sensing algorithms the sparsity of the signal can be defined as a number of nonzero elements within a vector. it can be described by using the ℓ0-norm [13]: 0 0 1 1, 0 lim 1 i n n p i p i i x x k        x , (6) and represents the cardinality of the support of x: 0 card{supp( )} k x x . (7) therefore, the solution of the undetermined system of equations (5), in the cases when the signal x is sparse in the transform domain, can be reduced to the minimization of the ℓ0norm, i.e.: 0 min subject to x y ax . (8) the ℓ0-norm is not feasible in practice, since small noise in the signal will be assumed as a non-zero sample. therefore, the ℓ1-norm is commonly used. the optimization problem based on the ℓ1-norm is recast as follows [12],[13]: 1 min subject to x y ax . (9) in the sequel, some of the commonly used algorithms for sparse reconstruction are described. 3.1. convex optimizations basis pursuit and basis pursuit denoising the equation (8) represents a non-convex combinatorial optimization problem. solution of this problem requires exhaustive searches over subsets of columns of the matrix a. for a k-sparse signal of length n, the total number of k-position subsets is n k       , which is not computationally feasible. other approach solves a convex optimization problem through linear programming, which is computationally more efficient. commonly used convex optimization algorithms are: basis pursuit, basis pursuit de-noising (bpdn), least absolute shrinkage and selection operator (lasso), least angle regression (lars), etc. the approach based on the convex ℓ1-minimization that provides near optimal solution, can be defined as: 1 min subject to x y ax . (10) this approach is known as a basis pursuit (bp) [6],[12]. it aims at decomposing a signal into a superposition of dictionary elements that have the smallest ℓ1-norm of the coefficients. bp can be solved by using a primal-dual interior point method. the problem (10) can be recast as follows, in the case of real y, a and x [12]: min , subject to ,t t t tx y ax    , (11) on some common compressive sensing recovery algorithms and applications 481 where variable t is introduced to avoid absolute value in 1 1 n ii x x . the steps of the primal-dual interior point method are described within the algorithm 1. in the cases of noisy measurements, y=ax+n, where n denotes noise and 2 n  , the optimization problem is known as basis pusuit denoising (bpd) and is defined as [6]: 1 2 min subject to x y ax  (12) algorithm 1: primal-dual interior point method  set 0 t x x a y  , for the known measurement vector y.  set  max0t   x x0 0 . parameters γ and λ are user-defined.  the next step is forming a lagrangian function: 1 1 , , , , ( ) ( ) , where 0 0 0 0 0 0 0 0 t t t g f t g t t t t x x x ax y x x x x                  1 1 0 0 0 0 g t t a x x           .  update each argument of the lagrangian function by step direction (δ) and step length (u). step directions for the algorithm 1 are obtained by finding the first derivatives of λ in terms of its arguments. step lengths are calculated using the backtracking line search [12]. for example, a new value for x is obtained as x=x+u(δx). adaptive gradient based algorithm adaptive gradient based algorithm proposed in [26], belongs to the group of convex optimization approaches. it starts from the chosen initial values of the available signal samples. the initial value is iteratively changed for +δ and –δ, and the concentration improving is measured in the sparsity domain. the gradient vector, used to update the signal values, is obtained as a difference between the ℓ1-norms of the vectors changed for +δ and changed for –δ. this gradient value is used to update the values of the missing samples. the performance of this algorithm can be efficient even for the signals that are not strictly sparse. the algorithm for both 1d and 2d cases is summarized in the algorithm 2. 3.2. greedy algorithms the greedy algorithms represent the second group of algorithms used to obtain the sparsest solution of the system (5). these algorithms are less computationally complex and therefore much faster compared to the ℓ1-norm based optimization techniques, but are also less precise. the greedy algorithms are based on finding the elements of the transform matrix called dictionary that best matches the signal through iterations. commonly used greedy algorithms are matching pursuit (mp), orthogonal matching pursuit (omp), compressive sampling matching pursuit (cosamp), etc. the procedure for the omp algorithm is described within the algorithm 3. 482 a. draganić, i. orović, s. stanković algorithm 2: adaptive gradient based algorithm input: set of the positions of the available samples ωa and set of the missing samples position: ωm=n\ωa; measurement vector y; in the 2d signal case n is: n=(nx,ny)  set (0) ( ), for ( ) 0, for a m n n n n     y y , and 0k   set (0)max ( )n y  repeat  set ( )( ) ( )k p n ny y  repeat  1k k   for tn do  if mt then     ( ) 1 2 ( ) ( ) { ( ) }, in the 2d case ( , ) ( ) { ( ) }, denotes 1d dft or 2d dft k k x f n f f f x f n           y y ; ( ) 1 1 ( )k t    x x , else  ( )( ) 0k t   end if  ( 1) ( ) ( )( ) ( ) ( )k k kt t t  y y  end for  1 2 2 1 2 2 arccos k k k k k          until 170k   / 10   2 2 ( ) ( ) 1010log ( ) ( ) / ( ) m m k k pn n r n n n     y y y until max required precisionr r   return ( ) ( )k ny output: reconstructed signal ( ) ( )k ny algorithm 3: orthogonal matching pursuit  input: compressive sensing matrix a=ωℑ , measurement vector y  initialization of the variables:  initial residual r0=y; initial solution x0=0; matrix of chosen atoms ϒ0=[].  do following steps until the stopping criterion is met:  arg max ,1 1,..., n n i i m r a    finding maximum correlation column  1 nn n  a    update matrix of chosen atoms  2 arg min 1 1 2n n n nx r x x    solving least square problem  1n n n nr r x  residual update  n=n+1  output: xp and rp, where p denotes number of iterations. on some common compressive sensing recovery algorithms and applications 483 3.3. threshold based algorithms iterative hard and soft thresholding thresholding algorithms are based on an adaptive threshold applied within several iterations. they are much faster than algorithms based on convex relaxation. an iteration can be described in terms of threshold function as [1],[6],[11],[13]: 1t ( ( ))i ix f x  . (13) the thresholding function is denoted as tε, while f is the function that modifies the output of the previous iterate and x is a sparse vector. the signal can be recovered from its measurement by using hard or soft thresholding. therefore, there are two types of iterative thresholding algorithms: iterative hard thresholding (iht) and iterative soft thresholding (ist). iht algorithm sets all but the k largest components, in terms of signal x magnitudes, to zero. the hard thresholding function hk is defined as [6],[11],[13]: , ( ) 0, otherwise i i k x x h      x  . (14) the ε is the k largest component of x [6]. the algorithm is summarized within the algorithm 4 [11]. soft thresholding function is applied to each element of the vector x and is defined as [6]: , ( ) 0, . , i i i i x s x x x                x x (15) algorithm 4: iterative hard thresholding input: signal sparsity k, transform matrix ℑ , measurement matrix ω, cs matrix 1 a , measurement vector y output: an approximation of the signal x 0 0x for i=1,…, until stopping criterion is met do  1 1( )t i k i ih    x x a y ax end for return ix x automated threshold based solution a non-iterative and iterative threshold based solutions for sparse signal reconstruction are proposed in [98]. the proposed solutions are based on the model of noise appearing as a consequence of missing samples. by using a predefined probability of error p, a general threshold t that separates signal components from spectral noise in the transform domain is defined. 484 a. draganić, i. orović, s. stanković algorithm 5: automated threshold based iterative solution input: m, n, y=x(ωa), ωa={n1,…,nm},  , φ,  a , n  . o set k = ; for i=1 : i=i+1: until all components are detected o calculate variance: 2 2 1 ( ) 1 m i n m y i m n m       ; o for a given p calculate:  2 1/log 1 ( ) nt p t   ; o calculate the initial dft vector xi: 1( )i  x y ; o update set k: arg{ / }i t n  k k x ; o calculate   1 h  f = a a ay ; (cs matrix a contains rows defined by the set k, and m columns of the dft matrix) o update y: 2 : = ( ) ( ) ak j n ak x k e     k y x ; o update the initial dft vector x according to the new vector y; o update 22 /a m y and 2 2 1 n m a m n     ; o if 2 2 n a  break ; end for the algorithm uses dft as a domain of sparsity but the same concept can be applied to other transform domains. this approach can provide successful signal x reconstruction within a single iteration of the reconstruction algorithm. however, if the number of available samples m is very low, the iterative version of the algorithm is derived as well, updating the threshold value. if the inputs of the algorithm are vector of the m available samples y, signal length n, set of the available samples positions ωa={n1,…,nm}, transform and measurement matrices  and φ, cs matrix  a and gaussian noise variance ζn, then the iterative version can be described using the algorithm 5. 4. cs applications the cs theory stating that the compressible signals can be efficiently reconstructed using a small set of incoherent measurements, motivated the researchers to explore possible fields of applications. having in mind that many real-world signals satisfy the sparsity property, the applications ranges from the speech and audio signals [58]-[61], radar and communications [62]-[83], underwater, acoustic and linear frequency modulated signals [84]-[86], image reconstruction [87]-[98], biomedical applications [98]-[101], etc. the review of cs applications for different 1d signals, images and video data will be addressed in the sequel. on some common compressive sensing recovery algorithms and applications 485 4.1. cs devices (analog to information, single pixel camera, random lens imager) let us firstly consider some of the hardware devices that are based on the cs principles. (a) duarte et al. in [102] proposed single pixel camera concept. this cs camera architecture is an optical computer, composed of a digital micromirror device dmd, two lenses and a single photon detector. it also contains an analog-to-digital (a/d) converter that computes random linear measurements of the scene under view. the image is recovered from the acquired measurements by a digital computer. compared to the conventional silicon-based cameras, single pixel camera is a simpler, smaller, and cheaper and can operate efficiently across a much broader spectral range. (b) fergus et al. in [103] developed a random lens imaging technique. the technique uses a normal digital single-lens reflex dslr camera, whose lens is replaced with a transparent material. the mirrors in this material are randomly distributed. the authors modified a pentax stereo adapter in order to make one of the mirrors have a random reflective surface. the cs measurements are in the form of images, obtained using this system. the new camera set-up has to be calibrated, in order to reconstruct the original image. (c) trakimas et al. in [104] proposed the design and implementation of an analog-toinformation converter (aic). the presented aic is designed in a way that can sample at the nyquist rate, but has also the cs operation mode. this design shows minimal complexity compared to conventional nyquist rate sampling architectures. when dealing with signals with sparse frequency representation, this design has increased power efficiency of the sampling operation. to generate the pseudorandom sequence, a pn clock generator is used and it can be configured to provide a synchronous clock signal when nyquist sampling is required. 4.2. cs in biomedical applications cs finds usage in numerous biomedical applications, such as in magnetic resonance imaging (mri) [105]-[108], then electroencephalography (eeg), electrocardiography (ecg), electrooculography (eog) and electromyography (emg) signals, [109]-[120], etc. some of the specific biomedical applications are given in the sequel. (a) lowering the time of patient exposition to the harmful mr waves was the primary motivation of cs usage in mri. however, the mr acquisition time is proportional to the dimensionality of the mr dataset, i.e., the number of spatial frequencies acquired. scan time can be reduced by lowering the amount of data acquired, but still it has to be able to recover the whole information. (b) lustig et al. in [98] implemented cs approach for rapid mri imaging. sparsity of the mri in the transform domain is exploited for achieving two goals: reducing the scan time and improving the resolution of the observed fast spin-echo brain images and 3d contrast enhanced angiographs. the non-linear conjugate gradient solution is used for the optimization problem solving. the problem is in the form: 2 12 arg min ,u     x x y x (16) where x is the image of interest,  is an operator that transforms signal from pixel representation into sparse representation, u is an undersampled fourier transform, y 486 a. draganić, i. orović, s. stanković denotes measured k-space (e.g. frequency space) data from the scanner and  is a regularization parameter. the conjugate gradient procedure is described in detail in [98]. (c) bioucas-dias et al. introduced twist: two-step iterative shrinkage/ thresholding algorithms for image restoration [101]. this algorithm is introduced as an improved version of the iterative shrinkage thresholding algorithm (ist) – to overcome the problem of its slow convergence in the cases when the measurement matrix a is ill-posed or ill-conditioned. the optimization problem is well-posed if ? has a solution, if a solution is unique and the solution changes continuously on the data [121]. otherwise, the problem is ill-posed. if small perturbation of the y in the problem y=ax leads to large perturbation of the solution, the problem is ill-conditioned [121]. the algorithm is successfully applied on image deconvolution problems, as well as reconstruction of the images with missing samples. considering the system of equations y=ax, the t-th iteration of the twist algorithm can be defined as follows: 1 0 1 1 ( ), (1 ) ( ) ( ),t t t t g g x x x x x x             (17) where μ and δ are nonzero parameters. the starting value for the vector x, x0, can be user-defined or x0=a -1 y. function gη is defined by using denoising operator ψη as: ( ) ( ( )),tg    x x a y ax (18) where 21( ) arg min ( ) / 2regv x x y ax      and φreg(x) is a regularization function. the application of the twist algorithm in mri reconstruction is shown. fig. 1 shows an example of mri reconstruction when only 2% of the image samples are available. the samples are acquired from the 2d dft domain using a mask. the mask is formed of radial lines and placed around the origin. the tv regularization is done according to [101]. the original image, mask and the reconstructed image are shown in fig. 1. original estimate 100 200 300 400 500 100 200 300 400 500 a) b) c) fig. 1 a) original image; b) mask in the 2d dft domain; c) image reconstructed from available samples (2% of the total number of samples) (d) trzasko and manduca in [122] proposed a method for under-sampled mr images recovering by using homotopic approximation of the ℓ0-norm. it is shown that the computed local minima of the homotopic ℓ0-minimization problem allows very highly undersampled k-space image reconstruction. the optimization problem can be defined starting from the relation: on some common compressive sensing recovery algorithms and applications 487 0 arg min subject to = , u u u u f    (19) where ψ is wavelet, curvelet, etc. operator, φ is fourier sampling operator and f is the continuous signal. if the ℓ0 semi norm is replaced with the ℓ1 norm, as proposed by candes and donoho [122], the optimization problem can be recast as: 2 1 2 arg min subject to ,n u u u u f      (20) where measured data fn is noisy and ε denotes the statistic of the noise process. chartrand [122] proposed an alternative to the ℓ0 semi norm that provides better sampling bounds compared to the ℓ1 and that is computationally feasible. he proposed the usage of the ℓp semi norms (00 is a regularization parameter. if we are dealing with an invertible transform ψ then the problem (57) can be defined as follows: 1arg min ( , , ) ( )f g   x x x y x (59) where x denotes the video or single video frame in the transform domain. greedy algorithms are used for the unconstrained problems. they are based on iterative constructing a sparse set of non-zero transform coefficients and finding solution of the minimization problem 2 1 2 - x y . the minimization problem solution can be 500 a. draganić, i. orović, s. stanković found using the following greedy algorithms: omp, regularized omp (romp) and stagewise omp (stomp), cosamp [133]. (b) a new approach for estimation of the motion parameters in compressive sensed video sequences under a reduced number of randomly chosen video frames is proposed in [134]. the method focuses on the velocity estimation and combines sparse reconstruction algorithms with time-frequency analysis, applied to μ-propagation signal. the μpropagation maps the video frames sequence into the frequency modulated signal, or into the high nonlinear phase signal. if a video frame at the instant t is defined as: ( , , ) ( , ) ( , )f x y t p x y o x y    , (60) where δx=x-x0-bxt, δy=y-y0-byt, o(x,y) denotes the moving object, p is background, (x0,y0) denote an initial object position and (bx,by) is the velocity. the projection of the frame onto the x-axis is defined as: ( , ) ( , ) ( , ) ( , ) ( ) ( ) y y y r x t f x y p x y o x y p x o x          . (61) finding derivative of the r(x,t) with respect to t and assuming the constant background, the following signal is obtained: ( , ) ( ) ( ) ( , 1) ( , )x r x t o x r x b r x t r x t t x            . (62) the velocity estimation is done by applying the tf analysis to the signal in the form: ( ) ( ) j x x m t r x e   , (63) having in mind that the instantaneous frequency corresponds to the moving object velocity. as tf representation, the s-method can be used since it provides cross-terms free representation and is more suitable in the noisy signal cases. it is defined based on the stft as: *( , ) ( , ) ( , ) l m i l s t f stft t f j stft t f j      , (64) where l is the s-method window width, while the stft(t,f) is defined as the ft of the windowed signal m(t), with window function w(η): ( , ) ( ) ( ) jstft t f w m t e       . the cs is employed to reduce the number of frames required for the if estimation. in other words, the cs is used to assure motion parameters estimation from an incomplete set of frames. if the subset of frame is denoted as s, s(x,y,ts)⸦f(x,y,t), where only m frames are acquired, ts={t1,…,tm}, then the μ propagation vector will contain small number of samples, i.e. we will have signal m(ts). for each windowed signal part used for the stft calculation, we have the measurement vector y(tsi): ( ) ( ) ( ),si si si sy t w m t t t     , (65) instead of desired vector x(t)=w(η)m(t+η). the ft of the vector y(tsi) will produce low resolution in the stft, and therefore, the cs is used in this step to recover missing samples in the vector y(tsi) and improve the resolution. if we denote the desired signal as on some common compressive sensing recovery algorithms and applications 501 x, measurement vector as y, the measurement and transform matrices as φ and  respectively, then the relation follows:   y x = x = ax , (66) where x corresponds to the stft coefficients at certain available time instant tsi. to find x or its spectral representation x from an incomplete measurement vector y, the following optimization problem can be used: 1 min subject to x y ax , (67) performed for each available time instant. a) frames initial sm 50 100 150 50 100 150 frames cs-based sm 50 100 150 50 100 150 b) c) 0 50 100 150 200 60 80 100 120 0 50 100 150 200 60 80 100 120 d) e) fig. 10 a) several frames from the observed video sequence; b) initial s-method of variable µ-propagation vector; c) cs based s-method of variable µ-propagation vector; velocity estimation using: d) initial s-method and e) cs based s-method the results obtained by using real video sequence are shown in fig. 10. the percentage of the available frames is 40%, due to the compressive acquisition. the moving of metronome’s pendulum is observed and some of the frames from the video sequence are shown in fig. 10a. the s-method of the μ-propagation vector calculated using the available samples, is shown in fig. 10b, while the cs-based s-method is shown in fig. 10c. the corresponding velocity estimations graphs are shown in fig. 10e and f. it is shown that the initial s-method produces error in velocity estimation, while precise results are obtained by using the csbased method. 502 a. draganić, i. orović, s. stanković 4.6. cs in watermarking (a) data protection in terms of cs has been discussed in [136]-[141]. fakhr in [137] proposed a watermark embedding and recovery technique based on the cs framework, tested under mp3 compression. the sparsity of both, the host and the watermark signal is assumed. the watermark is embedded into the measurement vector y. if we denote signal with x, transform domain matrix as  , a sparse signal b as watermark of length l, then the random watermark creation is described as: , w b (68) where ωm×l is the random gaussian matrix, and m is the measurement vector length. matrix ω is used for random expansion of the sparse vector b. the embedding is done as follows:    y x a b , (69) resulting in watermarked measurement vector. embedding strength a is adapted for each frame of the audio signal as: 2 1 0.04 , m i i    a x x x . the advantage of the proposed method is that, in order to recover the clean signal, the optimization problem has to be solved and thus, matrix ω has to be known. in this paper, for the optimization problem solving three methods are used: direct justice pursuit, multiplying by the inverse of ω and multiplying by the annihilator of ω. (b) an image watermarking procedure in the cs scenario is proposed in [139]. the randomly chosen pixels that serve as cs measurements are used to bring the watermark. the image is firstly divided into the blocks and measurements are selected from each block. samples are taken from the space domain, while the image sparsity is assumed in the dft domain. if we denote the n×n image block as ij, vector of measurements for j-th block as yj, tj vector of transform domain coefficients (dft) of the block ij,  as the fourier transform matrix and ωj as the measurement matrix for the block j, then the measurement vector is defined as: j j j j j    y i t . (70) the watermarked measurement vector jy is obtained as follows: j jj  y y , (71) where μ denotes watermark strength and ω is m×1 watermark vector (m denotes the number of measurements). the vector of watermarked coefficients is used to recover the image according to the total variation optimization: min ( ) subject toj j j jtv    t t y t . (72) the reconstructed image block irj is obtained as rj j i t . watermark detection is based on using the standard correlator that requires measurement matrix ωj to be known: ( ) i ii d   y . (73) on some common compressive sensing recovery algorithms and applications 503 the procedure is tested on 256×256 image, divided into 16×16 block. from each block, 50% of the pixels is randomly chosen and serve as a measurement in the reconstruction process, and carry watermark as well. the results are shown in fig. 11. psnr between original and watermarked/reconstructed image is 31.79 db. original image reconstructed image 500 1000 1500 2000 2500 -2 0 2 4 6 8 10 x 10 -3 right keys wrong trials fig. 11 a) original image; b) watermarked and reconstructed image; c) detector responses for 25 right keys and 2500 wrong trials (100 wrong trials for each right key) 5. conclusion the paper focuses on the compressive sensing, as an approach that records an intensive development in signal processing in recent years. an overview of the compressive sensing applications and commonly used algorithms for reconstruction of the signals with missing data is given. algorithms for the reconstruction of both, 1d and 2d signals, are described in the paper. the paper covers the applications starting from the radar signal processing, communications, biomedical signals and image reconstruction, through natural image reconstruction, velocity estimation in video signal processing, cs-based protection of the digital data and hardware devices designed based on the cs principles. experimental results are provided in order to show the performance of the presented algorithms and approaches. acknowledgement: the paper is a part of the research supported by the montenegrin ministry of science, project grant: “new ict compressive sensing based trends applied to: multimedia, biomedicine and communications (cs-ict)” (montenegro ministry of science, grant no. 011002). the authors are thankful to dr josip musić for testing the performance of the object detection in search&rescue images. 504 a. draganić, i. orović, s. stanković references [1] g. pope, “compressive sensing: a summary of reconstruction algorithms”, eidgenossische technische hochschule, zurich, switzerland, 2008. [2] e. candes, j. romberg, “l1-magic: recovery of sparse signals via convex programming”, october 2005. [3] d. donoho, “compressed sensing,” ieee transactions on it, vol. 52, no.4, 2006, pp. 1289 1306. [4] e. j. candes, j. romberg, t. tao, "robust uncertainty principles: exact signal reconstruction from highly incomplete frequency information," ieee transactions on information theory, vol. 52, no. 2, pp. 489-509, feb. 2006. [5] lj. stankovic, m. dakovic, s. stankovic, i. orovic, "sparse signal processing," in the book: digital signal processing, l. stankovic, createspace, amazon, 2015. [6] i. orovic, v. papic, c. ioana, x. li, s. stankovic, "compressive sensing in signal processing: algorithms and transform domain formulations," mathematical problems in engineering, review paper, 2016. [7] e. j. candes and t. tao, “decoding by linear programming,” information theory, ieee transactions on, vol. 51, no. 12, pp. 4203–4215, 2005. [8] g. davis, s. mallat, and m. avellaneda, “adaptive greedy approximations,” constructive approximation, vol. 13, no. 1, pp. 57–98, 1997. [9] y. arjoune, n. kaabouch, h. el ghazi, a. tamtaoui, "compressive sensing: performance comparison of sparse recovery algorithms," in 2017 ieee 7th annual computing and communication workshop and conference (ccwc), las vegas, nv, 2017, pp. 1-7. [10] s. stankovic, i. orovic, m. amin, "l-statistics based modification of reconstruction algorithms for compressive sensing in the presence of impulse noise," signal processing, vol.93, no.11, november 2013, pp. 2927-2931, 2013. [11] y. c. eldar and g. kutyniok, "compressed sensing: theory and applications", cambridge university press, may 2012. [12] s. stankovic, i. orovic, e. sejdic, "multimedia signals and systems: basic and advance algorithms for signal processing," springer-verlag, new york, 2015. [13] v.m. patel and r. chellappa, “sparse representations and compressive sensing for imaging and vision,” springerbriefs in electrical and computer engineering, 2013. [14] t. blumensath, m. e. davies, “iterative thresholding for sparse approximations”, journal of fourier analysis and applications, vol. 14, no. 5-6, pp 629-654, december 2008. [15] t. blumensath, m. e. davies, "gradient pursuits," ieee transactions on signal processing, vol.56, no.6, pp.2370-2382, june 2008. [16] r. mihajlovic, m. scekic, a. draganic, s. stankovic, "an analysis of cs algorithms efficiency for sparse communication signals reconstruction," in proceedings of the 3rd mediterranean conference on embedded computing, meco, 2014. [17] l. i. rudin, s. osher, e. fatemi, “nonlinear total variation based noise removal algorithms”, physica d: nonlinear phenomena, vol. 60, issues 1–4, 1 november 1992, pp. 259-268 [18] s. stankovic, i. orovic, "robust complex-time distributions based on reconstruction algorithms," in proceedings of the 2nd mediterranean conference on embedded computing meco 2013, budva, montenegro, 2013, pp. 105-108. [19] lj. stankovic, s. stankovic, m. amin, "missing samples analysis in signals for applications to lestimation and compressive sensing," signal processing, vol. 94, jan 2014, pp. 401-408, 2014. [20] s. stankovic, lj. stankovic, i. orovic, "a relationship between the robust statistics theory and sparse compressive sensed signals reconstruction," iet signal processing, special issue on compressive sensing and robust transforms, vol. 8, issue 3, pp. 223 229, may, 2014 [21] s. bahmani, “algorithms for sparsity-constrained optimization”, springer theses, series volume 261, isbn 978-3-319-01880-5, 2014. m. [22] t. zhang, “sparse recovery with orthogonal matching pursuit under rip,” ieee trans. on information theory, vol. 57, no. 9, pp. 6215-6221, 2011. [23] s. stankovic, i. orovic, lj. stankovic, a. draganic, "single-iteration algorithm for compressive sensing reconstruction," telfor journal, vol. 6, no. 1, pp. 36-41, 2014. [24] a. draganic, i. orovic, n. lekic, m. dakovic, s. stankovic, "architecture for single iteration reconstruction algorithm," in proceedings of the 4th mediterranean conference on embedded computing. on some common compressive sensing recovery algorithms and applications 505 [25] j. a. tropp, a. c. gilbert, “signal recovery from random measurements via orthogonal matching pursuit,” ieee transaction on information theory, vol. 53, no.12, 2007. [26] lj. stanković, m. daković, and s. vujović, “adaptive variable step algorithm for missing samples recovery in sparse signals,” iet signal processing, vol. 8, no. 3, pp. 246 -256, 2014. [27] s. vujovic, m. dakovic, i. orovic, s. stankovic, "an architecture for hardware realization of compressive sensing gradient algorithm," in proceedings of the 4th mediterranean conference on embedded computing meco 2015, budva, montenegro. [28] y. wang, j. xiang, q. mo, s. he, “compressed sparse time–frequency feature representation via compressive sensing and its applications in fault diagnosis”, measurement, vol. 68, pp. 70–81, may 2015. [29] s. stankovic, i. orovic, "an ideal omp based complex-time distribution," 2nd mediterranean conference on embedded computing meco 2013, pp. 109-112, june 2013, budva, montenegro. [30] y. c. eldar "sampling theory: beyond bandlimited systems", cambridge university press, april 2015. [31] p. flandrin, p. borgnat, "time-frequency energy distributions meet compressed sensing," ieee transactions on signal processing, vol.58, no.6, pp.2974, 2982, june 2010. [32] i. orovic, s. stankovic, t. thayaparan, "time-frequency based instantaneous frequency estimation of sparse signals from an incomplete set of samples," iet signal processing, special issue on compressive sensing and robust transforms, vol. 8, issue 3, pp. 239 245, may, 2014. [33] i. orovic, s. stankovic, m. amin, "compressive sensing for sparse time-frequency representation of nonstationary signals in the presence of impulsive noise," spie defense, security and sensing, baltimore, maryland, united states, 2013. [34] p. borgnat, and p. flandrin, "time-frequency localization from sparsity constraints," in proceedings of the ieee international conference on acoustics, speech and signal proceesing icassp-08, las vegas (nv), 2008, pp. 3785–3788. [35] m. brajović, b. lutovac, i. orović, m. daković, s. stanković, “sparse signal recovery based on concentration measures and genetic algorithm,” in proceedings of the 13th symposium on neural networks and applications neurel 2016, belgrade, serbia, november 2016. [36] x. li, g. bi, “time-frequency representation reconstruction based on the compressive sensing”, in proceedings of the 9th ieee conference on industrial electronics and applications, hangzhou, 2014, pp. 1158-1162. [37] s. stankovic, i. orovic, m. amin, "compressed sensing based robust time-frequency representation for signals in heavy-tailed noise," in proceedings of the information sciences, signal processing and their applications, isspa 2012, canada, 2012. [38] p. k. mishra, r. bharath, p. rajalakshmi, u. b. desai, "compressive sensing ultrasound beamformed imaging in time and frequency domain," in proceedings of the 17th international conference on e-health networking, application & services (healthcom), boston, ma, 2015, pp. 523-527. [39] i. orovic, s. stankovic, t. thayaparan, lj. stankovic, "multiwindow s-method for instantaneous frequency estimation and its application in radar signal analysis," iet signal processing, vol. 4, no. 4, pp. 363-370, 2010 [40] i. orovic, s. stankovic, "a class of highly concentrated time-frequency distributions based on the ambiguity domain representation and complex-lag moment," eurasip journal on advances in signal processing, vol. 2009, article id 935314, 9 pages, 2009. [41] s. stankovic, i. orovic, lj. stankovic, “polynomial fourier domain as a domain of signal sparsity”, signal processing, vol. 130, issue c, pp. 243-253, january 2017. [42] s. stankovic, i. orovic, t. pejakovic, m. orovic, "compressive sensing reconstruction of signals with sinusoidal phase modulation: application to radar micro-doppler," in proceedings of the 22nd telecommunications forum , telfor, 2014. [43] h. su, y. zhang, "time-frequency analysis based on compressive sensing," in proceedings of the 2nd international conference on cloud computing and internet of things (cciot), dalian, 2016, pp. 138142. [44] i. volaric, v. sucic, z. car, "a compressive sensing based method for cross-terms suppression in the time-frequency plane," in proceedings of the ieee 15th international conference on bioinformatics and bioengineering (bibe), belgrade, 2015, pp. 1-4. [45] lj. stankovic, s. stankovic, i. orovic, m. amin, "robust time-frequency analysis based on the lestimation and compressive sensing," ieee signal processing letters, vol. 20, no. 5, pp. 499-502, 2013. 506 a. draganić, i. orović, s. stanković [46] g. hua, y. hiang, g. bi, “when compressive sensing meets data hiding”, ieee signal processing letters, vol. 23, no. 4, april 2016. [47] a. draganic, m. brajovic, i. orovic, s. stankovic, "a software tool for compressive sensing based time-frequency analysis," in proceedings of the 57th international symposium, elmar-2015, zadar, croatia, 2015. [48] i. orovic, s. stankovic, t. chau, c. m. steele, e. sejdic, "time-frequency analysis and hermite projection method applied to swallowing accelerometry signals," eurasip journal on advances in signal processing, vol. 2010, article id 323125, 7 pages, 2010. [49] a. krylov, d. korchagin, “fast hermite projection method,” in proceedings of the 3rd international conference on image analysis and recognition (iciar ’06), vol. 1, pp. 329–338, povoa de varzim, portugal, september 2006. [50] s. stankovic, i. orovic, a. krylov, "the two-dimensional hermite s-method for high resolution inverse synthetic aperture radar imaging applications," iet signal processing, vol. 4, no. 4, pp. 352362, 2010. [51] m. brajović, i. orović, m. daković, s. stanković, “compressive sensing of signals sparse in 2d hermite transform domain,” 58th international symposium elmar-2016, zadar, croatia, september 2016. [52] a. sandryhaila, s. saba, m. püschel, j. kovačević, “efficient compression of qrs complexes using hermite expansion,” ieee transactions on signal processing, vol. 60, no. 2, pp. 947-955, february 2012. [53] a. draganić, i. orović, s. stanković, “robust hermite transform based on the l-estimate principle,” in proceedings of the 23rd telecommunications forum, telfor 2015. [54] s. stankovic, lj. stankovic, i. orovic, "compressive sensing approach in the hermite transform domain," mathematical problems in engineering, vol. 2015 (2015), article id 286590, 9 pages. [55] m. brajovic, i. orovic, m. dakovic, s. stankovic, "the analysis of missing samples in signals sparse in the hermite transform domain," in proceedings of the 23rd telecommunications forum telfor, 2015, belgrade, serbia, 2015. [56] i. orovic, s. stankovic, "improved higher order robust distributions based on compressive sensing reconstruction," iet signal processing, vol. 8, issue: 7, pp. 738 748, may 2014. [57] s. stankovic, i. orovic, lj. stankovic, "an automated signal reconstruction method based on analysis of compressive sensed signals in noisy environment," signal processing, vol. 104, nov 2014, pp. 43 50, 2014. [58] m. g. christensen, j. østergaard, s. h. jensen, "on compressed sensing and its application to speech and audio signals," conference record of the forty-third asilomar conference on signals, systems and computers, pacific grove, ca, 2009, pp. 356-360. [59] m. scekic, r. mihajlovic, i. orovic, s. stankovic, "cs performance analysis for the musical signals reconstruction," in proceedings of the 3rd mediterranean conference on embedded computing, meco, 2014. [60] d. wu, w. p. zhu, m. n. s. swamy, "a compressive sensing method for noise reduction of speech and audio signals," in proceedings of the ieee 54th international midwest symposium on circuits and systems (mwscas), seoul, 2011, pp. 1-4. [61] l. sun, x. shao, z. yang, "an adaptive multiscale framework for compressed sensing of speech signal," in proceedings of the 6th international conference on wireless communications networking and mobile computing (wicom), chengdu, 2010, pp. 1-4. [62] m. dakovic, lj. stankovic, s. stankovic, "a procedure for optimal pulse selection strategy in radar imaging systems," in proceedings of the international workshop on compressed sensing theory and its applications to radar, sonar and remote sensing (cosera), 19-22 september, aachen, germany, 2016. [63] a. bacci, e. giusti, d. cataldo, s. tomei, m. martorella, "isar resolution enhancement via compressive sensing: a comparison with state of the art sr techniques," in proceedings of the 4th international workshop on compressed sensing theory and its applications to radar, sonar and remote sensing (cosera), aachen, 2016, pp. 227-231. [64] s. costanzo, a. rocha, m. d. migliore, “compressed sensing: applications in radar and communications”, the scientific world journal, vol. 2016 (2016), article id 5407415, 2 pages, editorial. [65] lj. stankovic, s. stankovic, t. thayaparan, m. dakovic, i. orovic, "separation and reconstruction of the rigid body and micro-doppler signal in isar part i-theory ," iet radar, sonar & navigation, vol. 9, no. 9, pp. 1147-1154, 2015. on some common compressive sensing recovery algorithms and applications 507 [66] lj. stankovic, s. stankovic, t. thayaparan, m. dakovic, i. orovic, "separation and reconstruction of the rigid body and micro-doppler signal in isar part ii-statistical analysis," iet radar, sonar & navigation, vol. 9, no. 9, pp. 1155-1161, 2015. [67] a. draganic, i. orovic, s. stankovic, x. li, "isar reconstruction from incomplete data using total variation optimization," in proceedings of the 5th mediterranean conference on embedded computing, (meco 2016). [68] l. c. potter, e. ertin, j. t. parker, m. cetin, "sparsity and compressed sensing in radar imaging," in proceedings of the ieee, vol. 98, no.6, pp.1006-1020, june 2010. [69] m. dakovic, lj. stankovic, s. stankovic, "gradient algorithm based isar image reconstruction from the incomplete dataset," in proceedings of the 3rd international workshop on compressed sensing theory and its applications to radar, sonar and remote sensing, cosera, 2015. [70] j. ender, “on compressive sensing applied to radar”, signal processing, vol. 90, issue 5, may 2010, pp. 1402–1414. [71] lj. stankovic, s. stankovic, i. orovic, y. zhang, "time-frequency analysis of micro-doppler signals based on compressive sensing," compressive sensing for urban radar, ed. m. amin, crc-press, 2014. [72] lj. stankovic, i. orovic, s. stankovic, m. amin, "compressive sensing based separation of nonstationary and stationary signals overlapping in time-frequency," ieee transactions on signal processing, vol. 61, no. 18, pp. 4562-4572, sept. 2013. [73] s. stankovic, lj. stankovic, i. orovic, "l-statistics combined with compressive sensing," spie defense, security and sensing, baltimore, maryland, united states, 2013. [74] m. a. hadi, s. alshebeili, k. jamil, f. e. abd el-samie, “compressive sensing applied to radar systems: an overview”, signal, image and video processing, december 2015, volume 9, supplement 1, pp 25– 39. [75] a. draganic, i. orovic, s. stankovic, "blind signals separation in wireless communications based on compressive sensing," in proceedings of the 22nd telecommunications forum, telfor, 2014. [76] l. zhang, m. xing, c. w. qiu j. li, z. bao, “achieving higher resolution isar imaging with limited pulses via compressed sampling,” ieee geoscience and remote sensing letters, vol.6, no.3, pp.567– 571, 2009. [77] i. orovic, a. draganic, s. stankovic, "sparse time-frequency representation for signals with fast varying instantaneous frequency," iet radar, sonar & navigation, vol. 9, issue 9, pp. 1260 – 1267. [78] s. li, g. zhao, w. zhang, q. qiu, h. sun, "isar imaging by two-dimensional convex optimizationbased compressive sensing," ieee sensors journal, vol. 16, no. 19, pp. 7088-7093, oct.1, 2016. [79] p. zhang, z. hu, r. c. qiu, b. m. sadler, “a compressed sensing based ultrawideband communication system,” in proceedings of the ieee international conference on communications, 14-18 june 2009. [80] a. draganic, i. orovic, s. stankovic, m. amin, "rekonstrukcija fhss signala zasnovana na principu kompresivnog odabiranja," in proceedings of the telfor 2012, belgrade, 2012 [81] j. meng, j. ahmadi-shokouh, h. li, e. j. charlson, z. han, s. noghanian, e. hossain, “sampling rate reduction for 60 ghz uwb communication using compressive sensing, ” in proceedings of the asilomar conf. on signals, systems, and computers, monterey, california, november 2009. [82] a. draganic, i. orovic, s. stankovic, x. li, z. wang, "reconstruction and classification of wireless signals based on compressive sensing approach," in proceedings of the 5th mediterranean conference on embedded computing, (meco 2016). [83] b. jokanovic, m. amin, s. stankovic, "instantaneous frequency and time-frequency signature estimation using compressive sensing," spie defense, security and sensing, baltimore, maryland, united states, 2013, http://dx.doi.org/10.1117/12.2016636 [84] c. bernard, c. ioana, i. orovic, s. stankovic, "analysis of underwater signals with nonlinear time-frequency structures using warping based compressive sensing algorithm," in proceedings of the mts/ieee north american oceans conference, october 2015, washington, dc, united states, 2015. [85] i. murgan, a. digulescu, i. candel, c. ioana, “compensation of position offset of acoustic transducers using compressive sensing concept”, in proceedings of the oceans 2016 mts/ieee monterey, sep 2016, monterey, united states. pp. 1-4. [86] i. orovic, s. stankovic, lj. stankovic, "compressive sensing based separation of lfm signals," in proceedings of the 56th international symposium elmar 2014, zadar, croatia, 2014. [87] j. musić, t. marasović, v. papić, i. orović, s. stanković, "performance of compressive sensing image reconstruction for search and rescue," ieee geoscience and remote sensing letters, vol. 13, no. 11, pp. 1739-1743, nov. 2016. http://dx.doi.org/10.1117/12.2016636 508 a. draganić, i. orović, s. stanković [88] j. music, i. orovic, t. marasovic, v. papic, s. stankovic, "gradient compressive sensing for image data reduction in uav based search and rescue in the wild," mathematical problems in engineering, november, 2016 [89] a. akbari, d. mandache, m. trocan and b. granado, "adaptive saliency-based compressive sensing image reconstruction," in proceedings of the ieee international conference on multimedia & expo workshops (icmew), seattle, wa, 2016, pp. 1-6. [90] n. eslahi, a. aghagolzadeh, "compressive sensing image restoration using adaptive curvelet thresholding and nonlocal sparse regularization," ieee transactions on image processing, vol. 25, no. 7, pp. 3126-3140, july 2016. [91] j. wen, z. chen, y. han, j. d. villasenor, s. yang, "a compressive sensing image compression algorithm using quantized dct and noiselet information," in proceedings of the ieee international conference on acoustics, speech and signal processing, dallas, tx, 2010, pp. 1294-1297. [92] i. stankovic, i. orovic, s. stankovic, m. dakovic, "iterative denoising of sparse images," in proceedings of the 39th international convention on information and communication technology, electronics and microelectronics, (mipro 2016), 2016. [93] m. medenica, s. zukovic, a. draganic, i. orovic, s. stankovic, "comparison of the algorithms for cs image reconstruction," etf journal of electrical engineering 2014, 09/2014; vol. 20, no. 1, pp. 29-39. [94] c.-s. lu, h.-w. chen, “compressive image sensing for fast recovery from limited samples: a variation on compressive sensing”, information sciences, vol. 325, 20 december 2015, pages 33–47. [95] m. maric, i. orovic, s. stankovic, "compressive sensing based image processing in trapview pest monitoring system," in proceedings of the 39th international convention on information and communication technology, electronics and microelectronics, (mipro 2016). [96] s. stankovic, i. orovic, "an approach to 2d signals recovering in compressive sensing context," circuits systems and signal processing, 2016. [97] z. zhu, k. wahid, p. babyn, d. cooper, i. pratt, y. carter, “improved compressed sensing-based algorithm for sparse-view ct image reconstruction”, computational and mathematical methods in medicine, vol. 2013 (2013), article id 185750, 15 pages. [98] i. stankovic, i. orovic, s. stankovic, "image reconstruction from a reduced set of pixels using a simplified gradient algorithm," in proceedings of the 22nd telecommunications forum telfor 2014, belgrade, serbia, 2014. [99] m. lustig, d. donoho, j. pauly, “sparse mri: the application of compressed sensing for rapid mr imaging,” magn. reson. med., vol. 58, no. 6, pp. 1182–1195, 2007 [100] c. g. graff, e. y. sidky, “compressive sensing in medical imaging”, applied optics, 2015 mar 10; vol. 54, no. 8, c23–c44. [101] j. m. bioucas-dias, m. a. t. figueiredo, "a new twist: two-step iterative shrinkage/thresholding algorithms for image restoration," ieee transactions on image processing, vol. 16, no. 12, pp. 29923004, dec. 2007. [102] m. f. duarte et al., "single-pixel imaging via compressive sampling," ieee signal processing magazine, vol. 25, no. 2, pp. 83-91, march 2008. [103] r. fergus, a. torralba, w. t. freeman, “random lens imaging”, mit csail technical report, september 2006. [104] m. trakimas, r. d'angelo, s. aeron, t. hancock, s. sonkusale, “a compressed sensing analog-toinformation converter with edge-triggered sar adc core”, ieee transactions on circuits and systems i: regular papers, pp. 11351148, vol. 60, issue: 5, 2013 [105] m. lustig, d.l donoho, j.m santos, j.m pauly “compressed sensing mri”, ieee signal processing magazine, 2008, vol. 25, no. 2, pp. 72-82. [106] m. lustig, j.m. santos, d.l. donoho, and j.m. pauly, “k-t sparse: high frame rate dynamic mri exploiting spatio-temporal sparsity,” in proceedings of the 13th annual meeting ismrm, seattle, wa, 2006, p. 2420. [107] s. zukovic, m. medenica, a. draganic, i. orovic, s. stankovic, "a virtual instrument for compressive sensing of multimedia signals," in proceedings of the 56th international symposium elmar 2014, zadar, croatia, 2014. [108] m. hong, y. yu, h. wang, f. liu, s. crozier “compressed sensing mri with singular value decomposition-based sparsity basis”, physics in medicine and biology, vol. 56 (2011), pp. 6311–6325. [109] d. craven, b. mcginley, l. kilmartin, m. glavin, e. jones, "compressed sensing for bioelectric signals: a review," ieee journal of biomedical and health informatics, vol. 19, no. 2, pp. 529-540, march 2015. on some common compressive sensing recovery algorithms and applications 509 [110] y. liu, m. de vos, s. van huffel, "compressed sensing of multichannel eeg signals: the simultaneous cosparsity and low-rank optimization," ieee transactions on biomedical engineering, vol. 62, no. 8, pp. 2055-2061, aug. 2015. [111] a. m. abdulghani, a. j. casson, e. rodriguez-villegas, "quantifying the feasibility of compressive sensing in portable electroencephalography systems," in proceedings of the 5th international conference on foundations of augmented cognition. neuroergonomics and operational neuroscience: held as part of hci international 2009, san diego, ca, 2009, pp. 319-328. [112] s. senay, l. f. chaparro, m. sun, r. j. sclabassi, "compressive sensing and random filtering of eeg signals using slepian basis," in proceedings of the 16th european signal processing conference (eusipco 2008), lausanne, switzerland, 2008. [113] z. zhang, t. p. jung, s. makeig, b. d. rao, "compressed sensing of eeg for wireless telemonitoring with low energy consumption and inexpensive hardware," ieee transactions on biomedical engineering, vol. 60, no. 1, pp. 221-224, jan. 2013. [114] j. k. pant, s. krishnan, "reconstruction of ecg signals for compressive sensing by promoting sparsity on the gradient," in proceedings of the ieee international conference on acoustics, speech and signal processing, vancouver, bc, 2013, pp. 993-997. [115] l. f. polanía, r. e. carrillo, m. blanco-velasco, k. e. barner, "exploiting prior knowledge in compressed sensing wireless ecg systems," ieee journal of biomedical and health informatics, vol. 19, no. 2, pp. 508519, march 2015. [116] o. kerdjidj, k. ghanem, a. amira, f. harizi, f. chouireb, "real ecg signal acquisition with shimmer platform and using of compressed sensing techniques in the offline signal reconstruction," in proceedings of the ieee international symposium on antennas and propagation (apsursi), fajardo, 2016, pp. 1179-1180. [117] k. wilhelm, y. massoud, "compressive sensing based classification of intramuscular electromyographic signals," in proceedings of the ieee international symposium on circuits and systems, seoul, 2012, pp. 273276. [118] m. brajović, i. orović, m. daković, s. stanković, “gradient-based signal reconstruction algorithm in the hermite transform domain,” electronics letters, vol. 52, issue 1, pp. 41-43, 2016. [119] m. brajovic, i. orovic, m. dakovic, s. stankovic, "on the parameterization of hermite transform with application to the compression of qrs complexes," signal processing, vol. 131, february 2017, pages 113– 119. [120] m. brajovic, i. orovic, s. stankovic, "the optimization of the hermite transform: application perspectives and 2d generalization," in proceedings of the 24th telecommunications forum telfor 2016, november 2016, belgrade, serbia, 2016. [121] g. teschke “sparse recovery and compressive sampling in inverse and ill-posed problems”, lecture notes. [122] j. trzasko, a. manduca, "highly undersampled magnetic resonance image reconstruction via homotopic \ell _{0} -minimization," ieee transactions on medical imaging, vol. 28, no. 1, pp. 106121, jan. 2009. [123] p. zhang, z. hu, r. c. qiu, b. m. sadler, "a compressed sensing based ultra-wideband communication system," in proceedings of the ieee international conference on communications, dresden, 2009, pp. 1-5. [124] b. zhang, x. cheng, n. zhang, y. cui, y. li, q. liang, “sparse target counting and localization in sensor networks based on compressive sensing,” in proceedings of the ieee infocom, 2011, pp. 2255–2263. [125] m. weiss, “passive wlan radar network using compressed sensing,” in proceedings of the iet international conference on radar systems (radar 2012), glasgow, uk, 2012, pp. 1-6. [126] j. bazerque, g. giannakis, “distributed spectrum sensing for cognitive radio networks by exploiting sparsity,” ieee trans. signal process., vol. 58, no. 3, pp. 1847–1862, mar. 2010. [127] m. brajovic, a. draganic, i. orovic, s. stankovic, "fhss signal sparsification in the hermite transform domain," in proceedings of the 24th telecommunications forum telfor 2016, november 2016, belgrade, serbia, 2016. [128] y. lu, w. guo, x. wang, w. wang, "distributed streaming compressive spectrum sensing for wideband cognitive radio networks," in proceedings of the ieee 73rd vehicular technology conference (vtc spring), yokohama, 2011, pp. 1-5. [129] i. stanković, i. orović, m. daković, s. stanković, “denoising of sparse images in impulsive disturbance environment,” multimedia tools and applications, in print, 2017. [130] j. wu, f. liu, l. c. jiao, x. wang and b. hou, "multivariate compressive sensing for image reconstruction in the wavelet domain: using scale mixture models," ieee transactions on image processing, vol. 20, no. 12, pp. 3483-3494, dec. 2011. 510 a. draganić, i. orović, s. stanković [131] j. bobin, j. l. starck, r. ottensamer, "compressed sensing in astronomy," ieee journal of selected topics in signal processing, vol. 2, no. 5, pp. 718-726, oct. 2008. [132] j. bobin, j.-l. starck, “compressed sensing in astronomy and remote sensing: a data fusion perspective”, in proc. spie 7446, wavelets xiii, 74460i (september 04, 2009). [133] r. g. baraniuk, t. goldstein, a. c. sankaranarayanan, c. studer, a. veeraraghavan, m. b. wakin, "compressive video sensing: algorithms, architectures, and applications," ieee signal processing magazine, vol. 34, no. 1, pp. 52-66, jan. 2017. [134] i. orovic, s. park, s. stankovic, "compressive sensing in video applications," in proceedings of the 21st telecommunications forum telfor, novembar, 2013. [135] l.-w. kang, c.-s. lu, “distributed compressive video sensing,” in proceedings of the ieee international conference on acoustics, speech and signal processing (icassp '09), 2009, pp. 1169– 1172. [136] x. liao, k. li, j. yin, “separable data hiding in encrypted image based on compressive sensing and discrete fourier transform”, multimedia tools and applications, pp. 1-15, 2016. [137] m. w. fakhr, “robust watermarking using compressed sensing framework with application to mp3 audio”, international journal of multimedia & its applications 2013. [138] x. tang, z. ma, x. niu, y. yang, "compressive sensing-based audio semi-fragile zero-watermarking algorithm," chinese journal of electronics, vol. 24, no. 3, pp. 492-497, 07 2015. [139] i. orovic, s. stankovic, "compressive sampling and image watermarking," in proceedings of the 55th international symposium elmar 2013, zadar, croatia, sept. 2013. [140] m. orovic, t. pejakovic, a. draganic, s. stankovic, "mri watermarking in the compressive sensing context," in proceedings of the 57th international symposium elmar-2015, zadar, croatia, 2015. [141] i. orovic, a. draganic, s. stankovic, "compressive sensing as a watermarking attack," in proceedings of the 21st telecommunications forum telfor 2013, novembar, 2013. 10537 facta universitatis series: electronics and energetics vol. 35, no 4, december 2022, pp. 483-493 https://doi.org/10.2298/fuee2204483b © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper new approach to a ds-cdma-uwb system using a pseudo orthogonal code (poc) kada biteur1,2, belkacem benadda1,2, ahmed nour el islam ayad3 1dept of telecommunications, university abou bekr belkaid of tlemcen, algeria 2information processing and telecommunication laboratory (ltit),university tahri mohamed, bechar, algeria 3dept of electrical engineering, university kasdi merbah ourgla, algeria abstract. ultra-wideband direct sequences code division multiple access (ds-dma) plays an important role in the case of multi-terminal multi-application communications of uwb devices. in the case of uwb systems that exploit the injection of the pulse itself directly to the antenna hence the very wide bandwidth, generation of suitable ds-cdma codes poses a real challenge. in this paper we will describe our novel uwb transmission which uses pseudo-orthogonal time code (poc) as ds-cdma sequences. the suggested codes are unipolar sequences with chips that may be dynamically modified to target a certain number of users or applications. our approach bypasses the modulations schemes commonly used on uwb systems. moreover, as perspectives to our work, it would be very interesting to realize our new approach based on an fpga circuit. key words: uwb systems, pseudo-orthogonal code (poc), direct sequence-cdma 1. introduction the ultra-wideband (uwb) technology can be integrated into many applications such as personal area networks (wpan) [1-3] and mobile telecommunications (5g today) [46]. the uwb system is a rapidly developing technology that uses short range with very low power consumption, to transmit information over a majority of the radio spectrum to occupy a bandwidth greater than or equal to 25% of the center frequency or 1.5 ghz [7]. the uwb transmitters use very short-in-time pulses instead of carrier signals modulation. the most used pulses models are gaussian second derivatives, whose representation in the time domain is described by (1): 𝑈(𝑡) = (1 − 4𝜋 ( 𝑡 𝜗 ) 2 ) 𝑒−2𝜋( 𝑡 𝜗 ) 2 (1) where ϑ represents a time normalization factor. received february 23, 2022; revised april 18, 2022 and july 30, 2022; accepted august 31, 2022 corresponding author: biteur kada department of telecommunications, university abou bekr belkaid of tlemcen, algeria e-mail: biteur.kada@univ-ghardaia.dz 484 k. biteur, b. benadda, a. n. e. i. ayad fig. 1 second derivative of a gaussian pulse especially for wireless communications, the united states federal communications commission has set the power level to a very low level (lower than -41.3 dbm) [8] allowing uwb technology to share spectrum with other users without interference. to get the required spreading, various techniques can be used such as direct sequence (ds) and time-hopping (th) [9]. user data is allotted to time frames in the th-uwb systems, and pulse position modulation (ppm) is employed to eliminate overlap in multiple access networks [10-11]. on the other hand, time spreading codes are used in ds-uwb techniques [12] in the same way as they are in traditional direct sequence code access (dscdma) technique, so they have the same advantages than direct sequence spread spectrum (dsss) [13-14]. in this paper we propose a transceiver model suitable for a new approach to direct sequence digital transmission, for an ultra-wideband application (ds-uwb), using a pseudo-orthogonal time code (poc). the proposed codes are composed of unipolar sequences characterized by a length l, constituted of n elements called "chips", a predefined number of users, and the weight of the code; chips with level "1". moreover, to enhance the synchronization between transmitters and receivers, this new proposed spreading schema makes it possible to separately code high-level bits '1' and low-level bits '0' of the data stream by two different codes; the doublet code sequence is unique for each user. the proposed study aims to transmit ds-cdma-uwb without using classical modulations associated with uwb systems. our new model, based on pseudo orthogonal codes, build a ds-cdma-uwb system for both sides receiver and emitter. direct sequences for uwb systems are explained in section 2. section 3 will introduce the classic modulation schema used on uwb systems. sections 4 detail the poc mechanisms. the uwb ds-cdma emitter is detailed in section 5. sections 6 and 7 highlight the emitter signals generation; simulation and results for the propagation and signal acquisition at the receiver level that we present in section 8. section 9 concludes this paper. -5 -4 -3 -2 -1 0 1 2 3 4 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 nanoseconds a m pl it ud e new approach to a ds-cdma-uwbsystem using a pseudo orthogonal code 485 2. direct sequence uwb (ds-uwb) direct sequence spread spectrum systems appear easier to implement since all the pulses are spaced at the same period, which imposes fewer constraints on the components of the transmission chain. indeed, our built ds-uwb transmitter scheme uses orthogonal pseudo-random codes (pn) [15] as spreading sequences to encode each bit of information, and the bandwidth of the transmitted pulse is much greater than that used by the transmitted binary stream. figure 2illustrates a block diagram of the ds-uwb signal generator. fig. 2 block diagram of a ds-uwb signal generator 3. modulations associated with uwb systems there are mainly modulation methods for uwb communications, such as ppm (pulse position modulation), ook (on-off keying) and pam (pulse position amplitude modulation) [16-17]. ▪ ppm modulation: the information is encoded according to the position of the timespaced pulse; bit '0' is defined by a time-shifted pulse from a reference pulse that matches bit ’1’. ▪ ook modulation: corresponds to the presence of a pulse representing the "1" bit and the "0" results in the absence of a pulse. ▪ pam modulation: is an access method based on the property of orthogonality of pulses. fig. 3 modulations associated with uwb systems 486 k. biteur, b. benadda, a. n. e. i. ayad 4. pseudo-orthogonal codes (poc) j. a. salhi developed the poc codes in 1989 [18], these codes are composed of unipolar sequences c = {c j} defined by the following parameters: ▪ l represents the code length poc ▪ w stands for the code's weight, which denotes the number of chips at "1." ▪ the auto and inter-correlation constraints are represented by λ a and λ c respectively. 4.1. numbers of user in the event that λ a = λ c =1, various works [18-19] have shown that the number of possible users of a poc code sequence is limited by the relation (2): 𝑁(𝐿, 𝑊, 1,1) ≤ ⌊ 𝐿−1 𝑤(𝑤−1) ⌋ (2) ▪ n: number of user. ▪ l, w: represents the code length poc and the code's weight respectively. 4.2. construction of codes the bibd (balanced incomplete block design) method [20] allows us to generate oc (l, w) code sequences when the desired spread length is a prime number. it is mathematical method based on properties related to primitive roots from a galois field; it is a simpler and faster method. we consider the primitive root α of l, we can get the positions of the chips at 1 of the ith sequence ci = [pi,0 ; pi,1;…; pi,w-1] for each code according to the parity of w [21] : − 𝑖𝑓 𝑊 𝑖𝑠 𝑒𝑣𝑒𝑛(𝑊 = 2𝑚): { 𝑃𝑖,0 = 0 𝑃𝑖,𝑗 =∝(𝑚×𝑖)+(𝑗×𝑘) (3) 𝑤𝑖𝑡ℎ: 𝑖 ∈ [0, 𝑁 − 1]; 𝑗 ∈ [0, 𝑊 − 2] 𝑒𝑡 𝑘 = 2 × 𝑚 × 𝑁 − 𝑖𝑓 𝑊 𝑖𝑠 𝑜𝑑𝑑(𝑊 = (2 × 𝑚) + 1): {𝑃𝑖,𝑗 = 𝛼(𝑚×𝑖)+(𝑗×𝑘) (4) 𝑤𝑖𝑡ℎ: 𝑖 ∈ [0, 𝑁 − 1]; 𝑗 ∈ [0, 𝑊 − 1] 𝑒𝑡 𝑘 = 2 × 𝑚 × 𝑁 ▪ α is the primitive root of l. ▪ is the pci is the position of chips at 1 for ith code sequence 𝐶𝑖 = [𝑃𝑖,0; 𝑃𝑖,1; … ; 𝑃𝑖,𝑊−1] table 1 shows the code positions used in our study according to the bibd method. in the following figure 4, we present the positions of the chips at "1" of the poc code (73, 4) according to number of users n=6andthe length of the code l=73. table 1 the different positions of (73, 4, 1, 1) code according to the bibd method first chips j 0 1 2 code (73,4,1,1) n = 6 i 0 (c1) 0 1 8 64 1 (c2) 0 25 54 67 2 (c3) 0 36 41 69 3 (c4) 0 3 24 46 4 (c5) 0 2 16 55 5 (c6) 0 35 50 61 new approach to a ds-cdma-uwbsystem using a pseudo orthogonal code 487 fig. 4 positions of chips at "1" of the code poc (73,4) 5. new model of ds-cdma-uwb emitter for our proposed model, the bit flow equal to "1" is convoluted by the chips of a user's poc code and the bit flow equal to "0" bit by another user code, which gives an increased bandwidth to the signal by emitting low-energy gaussian-shaped pulses that are coherent on reception as explained by figure 5. fig. 5 ds-cdma-uwb emitter the ds-cdma-uwb signal transmitted to a user can be expressed as follows: 𝑆𝑃𝑂𝐶𝑐𝑜𝑑𝑒(𝑡) = [ ∑ 𝑏1 𝑘 ∞ 𝑘=−∞ ∑ 𝐶𝑗 𝑈 + ∑ 𝑏0 𝑘 ∞ 𝑖=−∞ ∑ 𝐶𝑗 𝑈∼ 𝑁𝑐−1 𝑗=0 ] ⊕ 𝑁𝑐−1 𝑗=0 𝑊(𝑡 − 𝑖𝑇𝑠 − 𝑗𝑇𝑐) (5) 0 50 100 0 0.2 0.4 0.6 0.8 1 user1 0 50 100 0 0.2 0.4 0.6 0.8 1 user2 0 50 100 0 0.2 0.4 0.6 0.8 1 user3 0 50 100 0 0.2 0.4 0.6 0.8 1 user4 0 50 100 0 0.2 0.4 0.6 0.8 1 user5 0 50 100 0 0.2 0.4 0.6 0.8 1 user6 spread spectrum data source the bits ‘’0’’ the bits ‘’1’’ poc code of a user poc code of another user uwb pulse generator 488 k. biteur, b. benadda, a. n. e. i. ayad ▪ 𝑏0 𝑘,𝑏1 𝑘 : is the 0 and the 1 bit respectively of binary data sent by the kth source ▪ 𝑊 is the pulse waveform ▪ 𝑇𝑐 , 𝑇𝑠are chip and symbol duration respectively ▪ 𝑁𝑐is the number of chips ▪ 𝐶𝑗 𝑈,𝐶𝑗 𝑈∼ is a code of two different users which only takes chips 1 or 0 up to n the number of users. 6. emitter simulation we first consider a random sequence of 8 bits modeling the useful information as limited bit stream. then we use two selected poc codes to spread the spectrum, which is completely independent of the random data sequences [20], this data transmission method uses more bandwidth than necessary to traditional transfer. for this paper purpose we have selected as an example the 4th and 6th poc sequences (73,4) for our user (all other codes use the same principle), i.e. the bit flow equal to "1" is convolved by 73 chips of code #4 and the bit flow equal to "0" convolved by 73 chips of code #6. 𝑆(73,4)(𝑡) = [( ∑ 𝑏1 𝑘 ∞ 𝑘=−∞ ∑ 𝐶𝑗 4) + ( ∑ 𝑏0 𝑘 ∞ 𝑖=−∞ ∑ 𝐶𝑗 6) 73−1 𝑗=0 ] ⊕ 73−1 𝑗=0 𝑊(𝑡 − 𝑖𝑇𝑠 − 𝑗𝑇𝑐) (6) the spread of the spectrum as represented in figure 6 modulates a sequence of data “10011011” by means of two pseudo-random poc codes chosen at a bit rate much higher than that of the information signal to be transmitted. that is to say the convolution is done once between the 73 code chips of user #4 with bits equal to and the 73 code chips of user #6 with bits equal to 0. . fig. 6 spread spectrum phase for the data sequence “10011011” 0 2 4 6 8 0 0.5 1 \data 0 20 40 60 80 0 0.5 1 \code of user#4 0 20 40 60 80 0 0.5 1 \code of user#6 0 200 400 600 0 0.5 1 \speared spectrum 0 50 100 0 0.5 1 \speared spectrum zoom of the bit '1' and '0' new approach to a ds-cdma-uwbsystem using a pseudo orthogonal code 489 6.1. generation of uwb pulses in this paper, we used the second derivative of the gaussian generated by equation (1) because of their ease of implementation in uwb systems [19-20]. as shown in the figure 7, the uwb pulse generator receives the spread data to create a second order gaussian derivative pulse train and output the signal through the antenna [22]. fig. 7 uwb pulses to comply with the regulatory agency's recommendations, the frequency band allocated for uwb transmissions has been grouped into two parts, a so-called "low band", comprising between 3 and 5 ghz, and the other called "high band", include between 6 and 10 ghz [23]. our transmitted ds-uwb signal is included in low band according to figure 8 which shows uwb signal spectrum and power spectral. fig. 8 the spectrum and the power spectral of uwb signal 0 100 200 300 400 500 600 0 0.5 1 \uwb 0 100 200 300 400 500 600 700 -1 0 1 \uwb signal 0 20 40 60 80 100 120 140 -1 0 1 \zoom uwb signal of the bit ''1'' and ''0'' 0 200 400 600 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 frequency (hz) x 10 7 am pl itu de (v ) spectrum of uwb signal 0 200 400 600 -100 -90 -80 -70 -60 -50 -40 -30 -20 frequency (hz) x 10 7 20 lo g1 0( db ) power spectral of uwb signal 490 k. biteur, b. benadda, a. n. e. i. ayad 7. transmission channel in our work, we did not examine multi-user interference (mui) [24] and intersymbol interference (isi) [25] since these phenomena are not predominant. in our work, the only phenomenon which imperfects our system is the noise awgn the received signal can be described by r(t) = s(t) + n(t) where s(t) is the signal generated by the transmitter and n(t) denotes the additive gaussian noise [26-27-28]. figure 9 shows the noise signal based on the awgn channel model. fig. 9 awgn channel output, where eb/no=2db 8. the correlation receiver gaussian white additive noise (awgn) channel the correlation receiver as shown in the figure 10 is the most optimal of a ds-cdma-uwb chain by adding a filter adapted to the received signal, it uses a correlation device, it breaks down into three steps main [29]: ▪ multiplication of the received signalr(t) by the poc code users #4 and #6 with the pulse generator uwb: 𝑅𝑐𝑜𝑟𝑟(𝑡) = 𝑟(𝑡) ∗ [(∑ 𝑏1 𝑘∞ 𝑘=−∞ ∑ 𝐶𝑗 4) + (∑ 𝑏0 𝑘∞ 𝑖=−∞ ∑ 𝐶𝑗 6) 73−1 𝑗=0 ] ⊕ 73−1 𝑗=0 𝑊(𝑡 − 𝑗𝑇𝑐)] (7) ▪ integration of the correlated signal over the bit time 𝑍1 (𝑖) = ∫ 𝑟𝑐𝑜𝑟𝑟(𝑡)𝑑𝑡 𝑇𝑏 0 (8) ▪ decision making by comparison to a threshold knowing that user poc code #4 and #6 indicates bit '1' , '0' respectively. fig. 10 correlation receiver 0 100 200 300 400 500 600 700 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 new approach to a ds-cdma-uwbsystem using a pseudo orthogonal code 491 at the reception, it suffices to compare the correlator signal with the possibly generated poc sequence to recover the transmitted signal. figure 11 illustrates the correlator output signal with its power spectral, the spectrum of the correlator output signal and recovered data. fig. 11 the correlator output signal with its power spectral, the spectrum and the data recovered the new ds-uwb system based on poc orthogonal unipolar codes without modulation was analyzed. only the end-to-end ds-uwb transmission chain we are interested in. we removed the modulation part on our new approach. poc codes are preconfigured (calculated in advance). our perspective is to realize our new ds-uwb approach based on components such as fpga [30-31-32], soc [33]… because nowadays it is easy to build a transceiver. 9. conclusion in this work, we suggested a new approach to a multi-users ds-cdma-uwb system using a family of pseudo-orthogonal codes poc on an awgn channel for a correlation receiver. applying poc code offered a whole new and different approach than any other used before in literature with the ultra-broadband system. we have given a complete description of the ds-cdma-uwb system, including the transmission and reception formalism. this work allowed us to present and analyze new emission reception approach based on ds-cdma-uwb signal. references [1] k. h. liu, l. cai and x. s. shen, ''exclusive-region based scheduling algorithms for uwb wp'', ieee trans. wirel. commun., 2008, 7, 933–942. [2] z. p. li and g. s. kuo, ''layered mac for high-rate uwb wpan system''. in proceedings of the ieee 64th vehicular technology conference, melbourne, australia, 7–10 may 2006, pp. 1-5. 492 k. biteur, b. benadda, a. n. e. i. ayad [3] n. m. aripin and n. fisal, ''analysis of channel time allocations for mpeg-4 video transmission over uwb wpan'', in proceedings of the ieee symposium on industrial electronics & applications, (isiea 2009), kuala lumpur, malaysia, 4–6 october 2009; vol. 2, pp. 705-710. [4] j. clerk maxwell, a treatise on electricity and magnetism, 3rd ed., vol. 2. oxford: clarendon, 1892, pp. 68-73. [5] b. yu, d. yang and b. wang, ''design of uwb antenna with double band-notched in 5g'', in proceedings of the ieee 5th advanced information technology, electronic and automation control conference (iaeac), 12-14 march 2021, pp. 480-483. [6] a. m. islam, e. i. emon and a. ahmed, ''a metamaterial loaded microstrip patch antenna for lower 5g'', u-nii spectrum, math. model. eng. probl., vol. 7, no. 4, pp. 556-562, dec. 2020. [7] p. tiwari and p. k. malik, ''design of uwb antenna for the 5g mobile communication applications: a review'', in proceedings of the ieee international conference on computation, automation and knowledge management (iccakm), 9-10 jan. 2020, pp. 24-30. [8] d. g. leeper, ''a long-term view of short-range wireless'', ieee computer, vol. 34, no. 6, pp. 39-44, jun 2001. [9] s. elajoumi, a. tajmouati, j. zbitou, a. errkik, a. m. sanchez and m. latrachee, ''bandwidth enhancement of compact microstrip rectangular antennas for uwb applications'', telkomnika telecommunication computing electronics and control, vol. 17, no. 3, pp. 1559-1568, 2019. [10] c. r. nassar, f. zhu and z. wu, ''direct sequence spreading uwb systems: frequency domain processing for enhanced performance and throughput in communications'', in proceedings of the ieee international conference on communications, 2003, vol. 3, pp. 2180-2186. [11] b. hu and n. c. beaulieu, ''accurate performance evaluation of time hopping and direct-sequence uwb systems in mmulti-user interference'', ieee trans. commun., vol. 53, no. 6, pp. 1053-1062, 2005. [12] w. wu, z. y. wu and w. ji. xie, ''uwb ppm-th and pam-ds system with time reversal and its improved solution'', in proceedings of the ieee 6th international conference on information and automation for sustainability, 27-29 sept. 2012, pp. 332-336. [13] l. lu and v. k. dubey, ''performance of a complete complementary code-based spread-time cdma system in a fading channel'', ieee trans. veh. technol., vol. 57, no. 1, pp. 250-259, jan. 2008. [14] b. r. vojcic and r. l. pickholtz, ''direct-sequence code division multiple access for ultra-wide bandwidth impulse radio'' in proceedings of the ieee military communications conference (milcom), 2003, vol. 2, pp. 898-902. [15] a. gupta and l. bhaskar, ''performance analysis of different pn sequence and orthogonal spreading sequences in ds-ss'', in proceedings of the ieee 5th international conference confluence the next generation information technology summit, 25-26 sept. 2014, pp. 890-892. [16] n. t. huyen and p. t. hiep, ''proposing adaptive pn sequence length scheme for testing nondestructive structure using ds-uwb'', in proceedings of the 3rd international ieee conference on recent advances in signal processing, telecommunications & computing (sigtelcom), 21-22 march 2019, pp. 10-14. [17] i. opperman, j. iinatti and m. hčamčalčainen, uwb theory and applications, the atrium, southern gate, chichester, west sussex po 19 8sq, england, wiley 2004. [18] h. s. hamid, m. s. mohammed and m. i. mustafa, ''design low power detection qpsk-transceiver for uwb'', in proceedings of the 3rd international conference on sustainable engineering techniques, iop conf. series: materials science and engineering, vol. 881, 2020, p. 012134. [19] j. a. salehi and c. a. brackett, '' code division multiple-access techniques in optical fiber networkspart i: fundamental principles'', ieee trans. on comm., vol. 8, no. 37, pp. 824-833, aug. 1989. [20] k. biteur and m. kandouci, ''successive interference cancellation receiver (sic) in ds-ocdma system'', in proceedings of the 24th international conference on microelectronics (icm), 16-20 dec. 2012, pp. 1-4. [21] h. chung and p. kumar, ''optical orthogonal codes new bounds and an optimal construction'', ieee trans. inf. theory, vol. 36, pp. 866-873. [22] k. biteur and m. kandouci, ''conventional receiver with optical limiter in ds-ocdma system'', int. j. adv. eng. technol., vol. 6, no. 4, pp. 1494-1504, sept. 2013. [23] t. sarkar, a. ghosh, s. chakraborty, l. l. kumar singh, ''a new insightful exploration into a low profile ultra-wide-band (uwb) microstrip antenna for ds-uwb applications'', j. electromagn. waves appl., vol. 35, no. 3, pp. 1-19, 2021. [24] a. jassim, ''performances of multiuser interference using pulse amplitude modulation with time hoping for ultra wideband'', international journal of electronics, communication& instrumentation engineering research and development (ijecierd), vol. 6, no. 4, aug 2016. https://www.researchgate.net/profile/l-singh-2 new approach to a ds-cdma-uwbsystem using a pseudo orthogonal code 493 [25] i. čuljak, ž. lučev vasić, h. mihaldinec and h. džapo, ''wireless body sensor communication systems based on uwb and ibc technologies: state-of-the-art and open challenges'', sensors, vol. 20, no. 12, p. 3587, jun 2020. [26] a. ramesha, a. nareshb, n. v. seshagiri raoc, ''technique for reduction of inters symbol interference in uwb'', in proceedings of the international conference on emerging trends in engineering, science and technology (icetest), 2015, pp. 812-819. [27] s. im and e. j. powers, ''an algorithm for estimating signal to noise ratio of uwb signals'', ieee trans. veh. technol., vol. 54, no. 5, pp. 1905–1908, 2005. [28] l. bo, q.-z. liu, z.-d. yin and z.-l. wu, ''a novel snr estimator for ds-uwb wireless sensor network'', destech trans. comput. sci. eng., 2017. [29] f. ramirez-mirles, ''on the performance of ultra wideband signals in gaussian noise and dense multipath'', ieee trans. veh. technol., vol. 50, no. 1, pp. 244249, jan. 2001. [30] md. a. azim, h. mohammad, m. rahman and n. amin, ''direct sequence ultra wideband system design for wireless sensor network'', in proceedings of the international conference on computer and communication engineering, 13-15 may 2008, pp. 1131-1135. [31] l. sneler, t. matic and i. galic, ''the fpga system for evaluation of uwb wireless sensor network based on transmitted reference integral pulse frequency modulator'', in proceedings of the ieee zooming innovation in consumer technologies conference (zinc), 2018, pp. 55-57. [32] c. thomos and g. kalivas, ''fpga-based architecture of a ds-uwb channel estimator and rake receiver employing a hybrid selection scheme'', in proceedings of the ieee 17th international conference on telecommunications, 2010, pp. 903-909. [33] m. cervetto, e. marchi and c. g. galarza, ''a fully configurable soc-based ir-uwb platform for data acquisition and algorithm testing'', ieee embed. syst. lett., vol. 13, no. 2, pp. 53-56, june 2021. facta universitatis series: electronics and energetics vol. 31, no 2, june 2018, pp. 303 311 https://doi.org/10.2298/fuee1802303m on a property of the reed-muller-fourier transform  claudio moraga faculty of computer science, technical university of dortmund, germany abstract. the reed-muller-fourier is reviewed and a new property is presented: the reed-muller-fourier transform of an n-place p-valued function preserves any permutation of the arguments. this leads to the additional result that the reed-mullerfourier spectrum of an n-place p-valued symmetric function is also symmetric. furthermore, the reed-muller and the vilenkin-chrestenson spectra of an n-place pvalued symmetric function are also symmetric. key words: multiple-valued switching theory, symmetric functions, reed-muller-fourier transform. dedicated to prof. radomir stanković on the occasion of his 65th birthday 1. introduction the fundamentals of the reed-muller transform may be found in the early work of i. zhegalkin [1], [2]. however since his publications were in russian, they remained practically unknown for scientists not proficient in that language. the transform was rediscovered with the works of i.s. reed [3] and d.e. muller [4] and since then, it carries their names. in the literature frequently this transform is mentioned as the rm transform. the transform was developed to be applied to boolean functions. the later extension of the reed-muller transform to multiple-valued domains is due to d.h. green and i.s. taylor [5]. the reed-muller-fourier transform (rmf) was introduced by radomir. s. stanković [6], [7] aiming to combine relevant properties of the reed-muller transform and the discrete fourier transform. in a way, this transform is another extension of the reedmuller transform to the multiple-valued domain. in the binary case, the rmf transform converges to the reed-muller transform. received august 3, 2017; received in revised form september 8, 2017 corresponding author: claudio moraga faculty of computer science, technical university of dortmund, germany (e-mail: claudio.moraga@tu-dortmund.de) 304 c. moraga an important common property of both the rm and rmf transforms is the fact that they represent bijections in the set of p–valued functions. this means that the rm spectrum or the rmf spectrum of an n–place p–valued functions is again an n–place p– valued function, not necessarily different from the original one. (it has been shown that both transforms have fixed points [8], [9]). moreover, both the rm and the rmf transforms have a kronecker product structure. (kronecker product: see e.g. [10], [11]). the rmf transform matrix is lower triangular [12] and exhibits special similarities with the pascal matrix on finite fields [13]. 2. formalisms notation: vectors and matrices will be written with upper case in bold. if m is a p m p n matrix, it will be denoted simply as mm,n. square matrices will be assigned just one index. if not clear from the context, the length of vectors will be explicitly given. an exception to this notation is “xprmf”, which, for historical reasons [7] will be used to denote the basis of the rmf transform. spectral techniques in a nut shell: let v = {0, 1, …, p–1} be the domain of p–valued functions and let f : v n  v, be an nplace p–valued function. to every function f, a value column vector f of length p n is associated. the elements of f are the values of f for all the different value assignments to the arguments. the elements of f follow the lexicographic order of the value assignments to the arguments of f. let f  f denote the association. it is obvious that f  inf, where in denotes the identity matrix, represents a valid association. if mn is a non-singular matrix, its inverse is also non-singular and well defined. moreover since (mn) -1  mn = in, then f  (mn) -1 mnf is also a valid association and represents the basic concept of spectral transformations. since (mn) -1 is non-singular, its columns form a linearly independent set. if the columns of (mn) -1 are considered to represent value vectors of auxiliary functions, then (mn) -1 constitutes a basis. mn, the inverse of (mn) -1 , is called a transform matrix and the product mnf is normally called the spectrum of f. the inner product of the basis and the spectrum leads to a polynomial expression of f. depending on the choice of (mn) -1 , different polynomial expressions on elements of the basis will be obtained. definition 1: let f, g : zp  zp. the gibbs convolution product () of p-valued functions is calculated as follows [6]: if x = 0, then (f  g)(0) = 0. if x  0, then (f  g)(x) = ∑ – – mod p definition 2: the fundamental basis for the rmf transform, called xprmf is the following [6], [7]: xprmf = [x* 0 x* 1 … x* (p–1) ], where x* 0 is defined to be the constant p – 1 for all x, and for 1 ≤ j ≤ p – 1, the powers x* j are calculated as the j–fold gibbs product of x* 0 with itself. on a property of the reed-muller-fourier transform 305 it is simple to show that xprmf is its own inverse. therefore the basic rmf transform matrix, called r1 equals xprmf, and for all n > 1 holds: rn = (xprmf) n , where the exponent “n” denotes the n-fold kronecker product of xprmf with itself. since xprmf is its own inverse, it is easy to see that rn will also be its own inverse. example 1: let n = 2 and p = 3. calculating mod 3, notice that the borders of r2 look different than those of r1. this will happen whenever n is even, since for all p, (p–1) n  1 mod p. if this is inconvenient for some application, then a normalized transform may be used. definition 3: the normalized rmf transform is given by rn = (–1) n+1 xprmf(1)⨂ n mod p. the factor (–1) n+1 is introduced to preserve the value (p–1), in the leftmost column of the matrix when n is even, since (–1) n+1 (p–1) n ≡ (p–1) n+1 (p–1) n ≡ (p–1) 2n+1 mod p. 2n + 1 will be an odd number and an odd power of (p–1) equals (p–1) mod p. it is simple to see that in this case rn is also self-inverse. if for particular applications a “homogeneous and dft-like look” is desirable, then a special rmf transform may be used. definition 4: the special rmf transform equals (p-1)(xprmf) n mod p. see figure 1. [ ] [ ] [ ] fig. 1 special rmf transform matrices for p = 3, 4, and 5 when n = 1 if for any p r1 is expressed as [ri,j], i, j  ℤp, then ( ) mod p [12]. it may be observed that in the case when p is a prime, the matrices are skewsymmetric, i.e., symmetric with respect to the diagonal with positive slope. furthermore besides being skew-symmetric and self inverse, starting at the lower left corner and moving along the diagonal with positive slope, a pascal triangle mod p is found. r2 = 306 c. moraga an important property of the rmf transform is the following: the rmf transform of a non-zero constant vector is an “impulse” vector, i.e. a vector with only one non-zero entry, at the 0-th position [12]. this is a well known property of the dft, which is preserved by the rmf transform. 3. theorems theorem 1. preliminaries: let v = {0, 1, …, p–1} be the domain of p–valued functions and let f : v 2  v, with value vector f of length p 2 . moreover let g : v 2  v, such that g(x1, x2) = f (x2, x1). let the value vector of g be g. furthermore, let p2 be a permutation matrix such that when applied upon f induces a permutation of its components according to the reordering of the arguments of the function. hence g = p2f. claim: the rmf transform of a p-valued function of two variables preserves the order of the arguments. r2g = r2p2f = p2r2f mod p. proof: let i, j  (ℤ ) , with i = i1i0 and j = j1j0. since r has a kronecker product structure, then r2 = r1  r1 mod p. if r2 is expressed as [ri,j] then ri,j = ( ( )) ( ( )) mod p. if i1 and i0 are exchanged, then modified ri,j mod p. and if j1 and j0 are exchanged, then modified ri,j mod p. it is simple to see that in both cases the modified ri,j takes the same value. moreover, exchanging i1 and i0 has the effect of exchanging (the corresponding) two rows of r2 and, similarly, exchanging j1 and j0 has the effect of exchanging (the corresponding) two columns of r2. exchanging i1 and i0 corresponds to p2r2, while exchanging j1 and j0 corresponds to r2p2. the assertion follows. although not explicitly needed for theorem 1, it is not difficult to construct the p2 matrices for different values of p, because of the strong regularity of their structure. they are symmetric, skew-symmetric and self inverse. see figure 2. on a property of the reed-muller-fourier transform 307 [ ] [ ] [ ] fig. 2 p2 matrices for p = 2, p = 3, and p = 4 corollary 1.1: from p2r2 = r2p2 and recalling that r2 is self inverse follows that p2 = r2p2r2. since p2 is also self inverse, then p2p2 = r2p2r2p2 = i2, meaning that r2p2 is also its own inverse. theorem 2. let n  2 and k < n. define f and g to be p-valued functions of n variables (i.e. nplace functions) with value vectors f and g, respectively, such that for all value assignments to the arguments, g equals f, but with transposed arguments xk and xk+1. let pn be a permutation which when applied to f has the effect of transposing only the two selected arguments, i.e., pn = (ik-1  p2  in-k-1). then rnpnf = pnrnf mod p. proof: decompose rn to match the structure of pn. i.e. rn = rk-1  r2  rn-k-1, and apply it to both sides of the claim, taking advantage of the compatibility between kronecker and matrix products [11]: rnpnf = (rk-1  r2  rn-k-1)(ik-1  p2  in-k-1)f = (rk-1  r2p2  rn-k-1)f mod p. pnrnf = (ik-1  p2  in-k-1)(rk-1  r2  rn-k-1)f = (rk-1  p2r2  rn-k-1)f mod p. it is easy to see that the claim will be satisfied if and only if p2r2 = r2p2. this was proven in theorem 1. the assertion follows. 308 c. moraga example 2. let p = 4 and n = 2. calculate p2r2 operating mod 4. from corollary 1.1, (p2r2) -1 = p2r2 = r2p2 therefore commuting the factor matrices will give the same result. theorem 3. let f and g be n-place p-valued functions with value vectors f and g, respectively, such that for all value assignments to the arguments, g equals f, but with transposed arguments xk and xk+1 and transposed arguments xh and xh+1. (n > k > h > 0). if applied independently, let the corresponding transposition matrices be and , respectively, leading to g =  f. the following holds: rng =  rnf mod p. proof: consider first one of the transpositions. let g’ = f mod p. then from theorem 1 follows that rng’ = rn f = rnf mod p. now let the second transposition be executed. g = g’. then from theorem 1 follows that rng = rn g’ = rng’ = =  rnf mod p. p2r2 = = = on a property of the reed-muller-fourier transform 309 theorem 4. let f and g be n-place p-valued functions with value vectors f and g, respectively, such that for all value assignments to the arguments, g equals f, but with permuted arguments. let pn be a permutation matrix, which when applied to f has the same effect as permuting the corresponding arguments. then rng = rnpnf = pnrnf mod p. proof: recall that any permutation of an ordered set of arguments may be obtained with an appropriate sequence of transpositions, and any transposition may be obtained with a cascade of transpositions of neighbor arguments. apply accordingly theorems 2 and 3 as many times as needed. theorem 5. the rmf spectrum of an n-place p-valued symmetric function is symmetric. proof: recall that a p-valued function is symmetric iff it is invariant with respect to any permutation of its arguments. (see e.g. [14], [15], [16], [17]) let f be the value vector of a symmetric function and let pn be equivalent to a random permutation of its arguments. then f = pnf. from theorem 4, rnf = rnpnf = pnrnf mod p. therefore rnf mod p is symmetric. example 3: let p = 4 and f : v 2  v be symmetric, such that f = [1 1 0 3 1 2 3 1 0 3 3 2 3 1 2 0 ] t let s = r2f s = 310 c. moraga symmetry proof: x2 x1 ft s t 0 1 2 3 0 1 2 3 0 1 2 3 0 1 2 3 0 0 0 0 1 1 1 1 2 2 2 2 3 3 3 3 1 1 0 3 1 2 3 1 0 3 3 2 3 1 2 0 1 0 3 3 0 1 3 0 3 3 0 3 3 0 3 2 it is easy to see that s, the spectrum of f, is also symmetric. remark: it was shown in [18] that an analog to theorem 3 holds for spectra obtained with the reed-muller or the vilenkin-chrestenson transforms. this also includes the circular vilenkin-chrestenson spectrum. corollary 5.1. the reed-muller and the vilenkin-chrestenson spectra of p–valued symmetric functions are symmetric. corollary 5.2. if f is a p–valued bent function [20], [19], then the function obtained after permuting the value assignment to the arguments is also bent, since the circular vilenkinchrestenson spectrum will remain flat., i.e. all its components will have a constant absolute value equal to p n/2 . 4. conclusions it has been shown that the rmf transform shares with the reed-muller and the vilenkin-chrestenson transforms the property of preserving any permutation of the arguments, in spite of their different structural attributes. recall that the vilenkinchrestenson transform is complex-valued, symmetric, and unitary up to a normalizing coefficient; the reed-muller transform is integer-valued and neither symmetric nor orthogonal; and the reed-muller-fourier transform is integer-valued, lower triangular, and self inverse. references [1] i.i. zhegalkin, “o tekhnyke vychyslenyi predlozhenyi v symbolytscheskoi logykye,” math. sb., vol. 34, pp. 9-28, in russian, 1927. [2] i.i. zhegalkin, “aritmetizatiya symbolytscheskoi logyky,” math. sb., vol. 35, pp. 311-377, in russian, 1928. [3] i.s. reed, “a class of multiple-error-correcting codes and the decoding scheme.” ire trans. on information theory pgit-4, pp. 38-49, 1954. [4] d.e. muller, “application of boolean algebra to switching circuit design and to error correction.” ire trans. on elec. computers ec-3, vol. 3, pp. 6-12, 1954. [5] d.h. green and i.s. taylor, “multiple-valued switching circuit design by means of generalized reedmuller expansions.” digital processes 2, pp. 63-81, 1976. [6] r.s. stanković, “some remarks on fourier transforms and differential operators for digital functions,” in proceedings of the 22nd international symposium on multiple-valued logic, sendai, japan, ieee press n.y., 1992, pp. 365-370. on a property of the reed-muller-fourier transform 311 [7] r.s. stanković, “the reed-muller-fourier transform – computing methods and factorizations”, claudio moraga: a passion for multi-valued logic and soft computing. (r. seising, h. allende-cid, eds.), springer 2017, pp. 121-151. [8] c. moraga, s. stojković and r.s. stanković, “on fixed points and cycles in the reed muller domain.” in proceedings of the 38th international symposium on multiple-valued logic, ieee press, 2008, pp. 82-88. [9] c. moraga, r.s. stanković, m. stanković and s. stojković, “on fixed points of the reed-muller-fourier transform.” in proceedings of the 47th international symposium on multiple-valued logic, ieee press, 2017, pp. 55-60. [10] a. graham, kronecker products and matrix calculus with applications. ellis horwood ltd., chichester uk, 1981. [11] r.a. horn and ch.r. johnson, topics in matrix analysis. cambridge university press, new york, 1991. [12] c. moraga, r.s. stanković and m. stanković, “a comparative study of the reed-muller-fourier transform, the pascal matrix, and the discrete pascal transform.” research report fsc-2015-02, european centre for soft computing, mieres, asturias, spain, 2015. [13] r.s. stanković, j.t. astola and c. moraga, “pascal matrices, reed-muller expressions, and reed-muller error correcting codes.” in logic in computer science ii, (s. ghilezan, ed.), press mathematical institute of the serbian academy of science, belgrade, serbia, 2015., zbornik radova 18 (26), pp. 145-172. [14] e. pogossova and k. egiazarian, “reed-muller representation of symmetric functions.” j. multiplevalued logic and soft computing, vol. 10, no. 1, pp. 51-72, 2004. [15] r.s. stanković, j.t. astola and k. egiazarian, “remarks on symmetric binary and multiple-valued functions.” in proceedings of the 6th international workshop boolean problems, b. steinbach (ed.), 2004, pp. 83-87. [16] j.t. butler and k. a. schueller, “worst case number of terms in symmetric multiple-valued functions.” in proceedings of the 21st international symposium on multiple-valued logic. ieee press, 1991. [17] j.c. muzio, “concerning the maximum size of the terms in the realization of symmetric functions.” in proceedings of the 20th international symposium on multiple-valued logic, 1990, pp. 292-299. [18] c. moraga, “permutations under spectral transforms.” in proceedings of the 38th international symposium on multiple-valued logic, ieee press, 2008, pp. 76-81. [19] p.v. kumar, r.a. scholz and l.r. welch, “generalized bent functions and their properties.” jr. combinatorial theory series a, vol. 40, no. 1, 90-107, 1985. [20] c. moraga, m. stanković, r.s. stanković and s. stojković, “contribution to the study of multiplevalued bent functions.” in proceedings of the 33rd international symposium on multiple-valued logic, ieee press, 2013, pp. 340-345. facta universitatis series: electronics and energetics vol. 32, no 2, june 2019, pp. 315-330 https://doi.org/10.2298/fuee1902315o feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network opeyemi osanaiye 1 , olayinka ogundile 2 , folayo aina 3 , ayodele periola 4 1 department of telecommunication engineering, federal university of technology, minna, niger state, nigeria 2 department of physics and telecommunications, tai solarin university of education, ogun state, nigeria 3 department of telecommunication science, university of ilorin, ilorin, kwara state, nigeria 4 electrical electronics and computer engineering, bells university of technology, ota, nigeria abstract. wireless sensor network (wsn) has become one of the most promising networking solutions with exciting new applications for the near future. notwithstanding the resource constrain of wsns, it has continued to enjoy widespread deployment. security in wsn, however, remains an ongoing research trend as the deployed sensor nodes (sns) are susceptible to various security challenges due to its architecture, hostile deployment environment and insecure routing protocols. in this work, we propose a feature selection method by combining three filter methods; gain ratio, chi-squared and relieff (triple-filter) in a cluster-based heterogeneous wsn prior to classification. this will increase the classification accuracy and reduce system complexity by extracting 14 important features from the 41 original features in the dataset. an intrusion detection benchmark dataset, nsl-kdd, is used for performance evaluation by considering detection rate, accuracy and the false alarm rate. results obtained show that our proposed method can effectively reduce the number of features with a high classification accuracy and detection rate in comparison with other filter methods. in addition, this proposed feature selection method tends to reduce the total energy consumed by sns during intrusion detection as compared with other filter selection methods, thereby extending the network lifetime and functionality for a reasonable period. key words: chi-squared, cluster, gain ratio, intrusion detection, nsl-kdd, relieff, wsns received january 16, 2019; received in revised form march 9, 2019 corresponding author: opeyemi osanaiy department of telecommunication engineering, federal university of technology, minna, niger state, nigeria (e-mail: opyosa001@myuct.ac.za) 316 o. osanaiye, o. ogundile, f. aina, a. periola 1. introduction wireless sensor networks (wsns) are formed by sets of distributed autonomous devices with the capability to sense, process, transmit and receive observed or measured condition. the sensor nodes (sns) used in wsns are characterized by their light weight, limited processing power, limited energy, low storage capacity, short communication range and low bandwidth [1]. the sensor component of the sn measures the observed condition of a particular situation or physical surroundings while the microprocessor ensures the obtained information are intelligently computed [2]. the wireless radio of the node, on the other hand, ensure communication between neighbouring nodes. wsns often times are deployed in remote, harsh and unattended environment over a certain period of time. these locations are most times not accessible, therefore, it is impractical to carryout maintenance on the nodes after installation. common among its applications are in the area of environmental monitoring, air craft control, disaster control, medical health monitoring, surveillance and military application among many others [3]. although wsns have been used in numerous applications, the requirements of these applications have put a lot of constraints on its design and deployment. security has been identified in the literature as one of the main constraints in the deployment of wsns. this is evident as wsns are subjected to vulnerabilities associated with wireless communication. additionally, in events that involve unprotected hostile outdoor environment, wsns are prone to different types of attack that compromise the confidentiality, integrity, authentication and availability of the data traffic and battery life of the sns [4,5]. many of these attacks have been identified, analysed and discussed in the literature, with authors proffering different defence and prevention techniques. one of such attacks is the denial of service attack, which can also be referred to as packet drop attack or sinkhole attack [6]. blackhole attack in wsn is also a type of denial of service attack that advertises itself as either the destination node or the shortest route to get to the destination. upon receiving these falsely advertised packets from other nodes, the attacker discards all the packets. selective forwarding is a derivative of blackhole attack in which the adversary node does not reject all received packet, instead, it randomly selects packets that will be discarded [7]. the adversary can use this to evade detection. in order to protect the wsns from intrusion by an adversary, various intrusion detection system (idss) have been proposed by researchers. these ids defence solutions are categorized into signature-based and anomaly-based. the former relies on signatures of known attack patterns while the latter profiles a statistical usage model over a certain amount of time to classify data packets as either normal or anomaly using various techniques such as data mining, machine learning and statistical modelling. the signaturebased has a major flaw of not being able to detect unknown attacks while anomaly-based detection suffer from high false positive rate [8]. this has necessitated the emergence of a hybrid solution that uses the complementary feature of both techniques to achieve a higher detection rate. the novel challenges of most of these proffered security solutions for wsns include its limited storage capacity, computational resources and battery power. therefore, traditional security solutions are inappropriate for wsns. due to the resource limitation in wsn environment, proposed ids designs are often lightweight and highly specialized by type of attack to reduce false alarms. computational intelligence ids improves its performance by providing features such as learning, reasoning, perception, evolution and adaptation [5]. these features can be explored to feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 317 develop a more robust ids that is adaptive to different application scenarios, to handle unknown attacks. in this work, we introduce a pre-processing phase in the form of feature selection by combining three filter feature selection methods; gain ratio, chi-squared and relieff, herein called triple-filter, to select one-third split (14 most important features) from the original dataset before classifying with a decision tree algorithm. the motivation behind feature selection is the resource constraint of sns, therefore machine learning techniques use feature selection to eliminate redundant features to reduce the complexity of the proposed system. intrusion detection benchmark dataset, nsl-kdd that consists of 41 features [9] was used to evaluate the performance of the ids by considering the detection rate, classification accuracy and false alarm rate in waikato environment for knowledge analysis (weka). furthermore, we compared our result with the proposed work in [10]. the results obtained show that our proposed method can effectively reduce the number of features with a high classification accuracy and detection rate and a low false alarm rate as compared with [10]. the contribution and relevance of this paper is as follows. in this work, we introduce a pre-processing phase in the form of feature selection, similar to our approach in [11]. however, here we combine three filter feature selection methods, herein called triple-filter. this is used to select the 14 most important features in nsl-kdd for intrusion detection in wsns. this reduces the complexity of the ids by presenting a lightweight technique. reduced ids complexity implies that the sns in a wsn will consume less energy while maintaining high availability. since the sns are battery powered, prolonging the network lifetime and functionality to a reasonable time is very paramount. thus, our proposed ids defence solution is suitable for use in a real-time wsn as it helps to efficiently extend the network life-time and functionality. the rest of the paper is structured as follows. section 2 describes related work on ids defence solution for wsns. in section 3, the wsn architecture and the proposed ids was discussed. also, the section explains the three filter feature selection methods; gain ratio, chi-squared, and reflieff in details. the feature selection and execution process is highlighted in section 4 while section 5 present the experimental results. section 6 highlights the performance measure with respect to the classification accuracy, detection rate and false alarm, while we discuss the results in section 7. finally, section 8 concludes the work and suggests possible research directions. 2. related work in defending against malicious attacks in wsn, various intrusion detection approaches have been proposed in the literature. an intelligent intrusion and prevention system was proposed in [1] by introducing a specialized dataset for wsn. this improves the detection and classification of four types of denial of service (dos) attacks: blackhole, grayhole, flooding, and scheduling attacks. artificial neural network (ann) was used to train the dataset to detect and classify the different dos attacks. results from the work show that the dataset, wsn-ds, enhanced the ids ability to achieve a higher classification accuracy rate. an ids based on evidence theory was proposed in [12] for cluster-based wsn. in this work, each cluster head collects the behavioural pattern of its cluster members before constructing an input evidence according to the deviation from the normal pattern. a weight value is further 318 o. osanaiye, o. ogundile, f. aina, a. periola applied to represent the importance of each behaviour characteristics and revise the evidence before its synthesis. a hybrid ids that enhances security in cluster-based wsn has been proposed in [13]. in this work, the proposed ids is deployed on the cluster head and consists of both an anomaly and misuse module. the output of the anomaly and misuse modules are integrated with a decision-making module to identify the presence of an attack before subsequently classifying into different attack type. in [14], a distributed two-layer and threelayer ids scheme was proposed for wsn to detect intrusion using 10% of the data to learn during the training phase. a complexity reduction process was introduced to select the features to minimize the energy consumption. a specification-based intrusion detection system was proposed in [15]. this system uses rule-based technique to map behaviours to either normal or anomalous. the rulebased technique optimizes the local information obtained by watch dogs into a global information for decision making by cluster heads. this compensate for the communication pattern in the network. in [16], a decentralized ids was proposed for wsn. the proposed algorithm is divided into three phases; data acquisition, rule application and intrusion detection. in data acquisition phase, messages are obtained in promiscuous mode and the relevant information are filtered and subsequently stored for analysis. the rule application phase, on the other hand, process the information and apply the rule to the stored data. if the message fails the test during analysis, a failure is raised. lastly, in the intrusion detection phase, the amount of raised failure is compared with the expected amount of occasional failures in the network. intrusion alarm is raised if the former is higher than the latter. in [10], an integrated intrusion detection system (iids) was proposed for clusterbased wsns. the iids was based on an earlier work in [17] and it consists of three individual idss, namely: intelligent hybrid intrusion detection system (ihids), hybrid intrusion detection system (hids) and misuse ids. these idss are designed for the base station (bs), cluster head and cluster members, based on their capacity and the type of attack they are vulnerable to. for example, the ihids with a learning capability is deployed in the bs. the ihids combines the anomaly and misuse detection by first filtering a large number of normal packets. the packets are then forwarded to the misuse detection module to identify the type of attack. this is done to achieve a high detection with low false alarm. the cluster heads, on the other hand, houses the hids, which is similar to the ihids but without a learning ability. the hids function to optimally detect attacks, however, it retrains the behaviour of the new attack previously detected and classified by the ihids. lastly, due to the resource constraints of sns, the misuse ids is proposed. the misuse ids uses a predetermined attack model to match packets to find and detect attacks. experimental results for the misuse detection, using back propagation network and kddcup’ 99 dataset, shows that a detection rate of 90.96% was achieved with an accuracy of 99.75% and false positive of 2.06%. in the discussion above, different techniques have been considered for feature selection in wsns. the overall aim of these techniques is to enhance the ability of sns to differentiate attacks in wsn. the performance of the security mechanism designed in this manner can be influenced by the number of features of the dataset. different kinds of feature selection methods can be used to achieve varying results. this is because of the resource limitation characterizing wsns. therefore, a combination of different feature selection methods that considers the resource constraints in wsn is required. a strategy that uses multiple algorithms that harness its features will be advantageous in classifying the type of attack in wsns. feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 319 considering the resource limitation that characterize wsns, this work proposes a feature selection method by combining the trio of gain ratio, chi-squared and relieff (triple-filter) to select one-third split (14 features) from the initial 41 features of the dataset. this will significantly reduce the complexity of the ids and minimize the energy consumed during intrusion detection. more so, this filter feature selection method offers high detection rate with good classification accuracy and a low false alarm rate as shown in table 4. 3. wsn architecture and proposed ids the deployment of wsns is often made up of tens to hundred thousand of autonomous sns that function via member node communication. this is necessary as a single sensor node only covers a small area, therefore can only provide limited information. this single node deployment limitation has brought forth the introduction of networks of sns, that are selforganising and collaborative, to achieve a wider coverage over a large environment. the sns monitor, sense, computes and transmits the observed and measured condition of the environment to relay the information to the intended user through the base station. a typical sensor node consists of sensor components, microprocessor components and wireless radio. the sensor component measure the condition of the observed environment of interest while the microprocessor component embedded in the node is used to intelligently compute the obtained information [1]. the wireless radio component of the sensor node is used to initiate communication between neighbouring sensor nodes in wsn. a significant benefit of sensor network deployment is its ability to extend its coverage area to environments where it is near impossible for human beings to access. when categorizing wsns, environment the sensor nodes are deployed can be used. the work in [18] described five types of wsn, namely: underground wsn, terrestrial wsn, underwater wsn, multi-media wsn and mobile wsn. in underground wsn deployment, sensor nodes are buried under the surface of the ground to monitor and sense its condition. these sensor nodes transmit the sensed information to the sink node, which is placed above the ground, to relay it to the base station. terrestrial wsn, on the other hand, consist of several cheap sensor nodes deployed on a specific area of interest, on the surface of the earth in a pre-planned or ad hoc way. the pre-planned deployment involves the optimal placement of sensor nodes, such as grid placement and 3-d placement model [19], while in ad hoc deployment, sensor nodes are randomly deployed. underwater wsn deployment are instances where the sensor nodes are deployed under the water body to sense, explore and gather information about a subject matter and transmits this information using acoustic wave [20]. underwater wsn presents a sparse sensor node deployment as compared to the dense deployment of terrestrial wsn. multi-media wsn are sensor nodes equipped with cameras and microphones to ensure the efficient monitoring and tracking of multi-media events, such as imaging, audio and video [21]. here, the sensor nodes interconnects over a wireless medium to retrieve, process, compress and convey sensed data in a pre-planned arrangement to ensure coverage. one major obstacle to the deployment of multimedia wsn is the resource challenge of sensor nodes, due to the excessive energy consumption during the compression and decompression when transmitting multi-media events. finally, mobile wsn are sets of sensor nodes deployment that move and interact with the physical environment. just as with static wsn, 320 o. osanaiye, o. ogundile, f. aina, a. periola mobile nodes can sense, compute, transmit and receive observed and measured events. the sensor nodes have the potential to reorganise and reposition themselves after deployment to obtain information. the obtained information can be distributed among other mobile nodes within their communication range using dynamic routing protocol. wsn can be further classified according to the structure and uniformity of the deployed sensor nodes. some deployment consists of uniform nodes with equal capacity while other deployments consist of different sizes and capacity, depending on the architecture. in wsn, the network structure (topology) can be categorized into two, namely: flat-based and hierarchical [22]. the flat-based topology consists of sensor nodes with equal capacity, playing similar roles, such as monitoring and sensing events, computing the sensed information and transmitting it directly or via multi-hop routing towards the bs [23]. on the other hand, hierarchical wsns are designed to distribute the sensing and monitoring function of the sns into different levels. cluster-based wsns are typical example of hierarchical wsns. in this paper, we limit our scope to cluster-based wsns. arranging sns into clusters have been widely employed by researchers to efficiently sense and monitor a particular environment. the clustering technique is widely used in wsns because it offers advantages such as reduced energy consumption, fault-tolerance, scalability, efficient data aggregation, latency reduction, and robustness [3,24]. a clustered wsn comprises of two sets of nodes, namely: the member nodes known as the non-cluster head nodes, and the coordinating nodes often referred to as the cluster head. fig.1 shows a typical example of a cluster-based wsn, where c represents a cluster. as shown in fig. 1, the non-cluster head nodes forward the sensed message to their respective cluster heads in a process known as intra-cluster communication. the cluster heads organise the messages from their respective members before transmitting it to the bs. thus, clustering technique can be regarded as a two-layer hierarchy wsn, where the cluster heads work in the upper layer and the non-cluster head nodes operate in the lower layer. the coordinating nodes in most cases perform more function as compared to the lower layer nodes. therefore, the cluster head nodes are sometimes equipped with better processing subsystem, sensing unit, radio subsystem, and power supply unit as compared with the lower layer. if the components of all the sensor nodes in the network are the same, the clustering wsn is usually referred to as a homogeneous clustering wsn. otherwise, it is referred to as a heterogeneous clustering wsn. in this work, we assume that the cluster heads are equipped with a better processing subsystem, sensing unit, radio subsystem, and power supply unit. accordingly, our proposed ids is deployed on the cluster heads for intrusion detection. the cluster heads will monitor the sns to detect attacks. furthermore, the cluster heads will filter abnormal data and forward all the reliable sensed information to the bs, either directly or via one or more relay nodes. from the literature, the relay nodes can either be a cluster head node or a non-cluster head node [3]. since our proposed ids are installed only on the cluster head nodes, we assume that the relay nodes towards the bs can only be a cluster head node in order to maintain high availability. more so, the ids is deployed only on the cluster head nodes to conserve the battery energy of the non-cluster head nodes, which in turns prolong the network lifetime and functionality. finally, the bs integrates all the collected information and transmits the final result to the end user. this proposed ids defence solution can be deployed with relevant energyefficient and energy-balanced clustering routing protocols such as [25, 26, 27, 28, 29]. however, in this paper, we verify our proposed ids solution with the routing algorithm proposed in [26]. feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 321 fig. 1 typical example of a cluster-based wsn in this section, we present a detailed explanation of our proposed ids. current feature selection methods can be categorised into filter, wrapper and embedded method. while wrapper and embedded methods are time consuming and require specific classification techniques to determine the importance of feature subset, filter methods often rely on the general attributes of the dataset to carry out data pre-processing; a step which is independent of the induction algorithm [11]. furthermore, filter methods can be classified into univariate and multivariate techniques. univariate techniques, such as information gain, presents an efficient and scalable method, however they tend to disregard feature dependencies. multivariate filter techniques, on the other hand, incorporate feature dependencies. this makes multivariate techniques more complex. the system that use multivariate techniques are less scalable and have a longer computational time than systems incorporating univariate techniques. in this work, we combine three filter selection methods, gain ratio, chi-squared, relieff, herein referred to as triple-filter method. the choice of these filter methods is due to its ranking and space searching algorithm. furthermore, research has shown that combining feature selection methods can improve the performance of classifiers by identifying features that are weak individually but strong as a group [31]. our proposed triple-filter method relies on the combined strength of the trio to determine the features that are strong in determining the output class. here, we select 14 most important features. a. gain ratio in filter feature selection, the value of gain ratio is said to be large when data are evenly spread while it presents a small value when all data belongs to only one branch of attribute. gain ratio is an improvement on information gain that remedies its bias towards features with large diversity value exhibited by the latter. it uses the number and size of branches to determine an attribute and corrects information gain by using intrinsic information [30]. intrinsic information is the entropy of distribution of instance value for a given feature. gain ratio can be calculated [30] for a given feature and a feature value of using the equation (1) below 322 o. osanaiye, o. ogundile, f. aina, a. periola ( ) ( ) ( ) (1) where, intrinsic value ( ) ∑ is the number of possible values feature can take while is the number of actual values of feature . in our work, we select 14 features from the nsl-kdd dataset that represents the highest ranked feature using gain ratio. b. chi-squared chi-squared (χ 2 ), in mathematical statistics, is a feature selection method that is often used to determine the worth of an attribute with respect to a particular class. chi-squared can be used to test the independence of two variables with an initial hypothesis, ; with the assumption that the two features are not related [30, 31]. this can be tested using the chi-squared formula: ∑ ∑ ( ) (2) where is the actual value and is the predicted value declared by the hypothesis . the higher the value of the chi-squared, the higher the evidence against the null hypothesis. c. relieff relieff is an extension of an earlier relief algorithm that randomly samples an instance from the dataset to locate its nearest neighbours from both the same and opposite class [32]. the values of the attributes obtained from the nearest neighbours, after comparing with the sample instance, are used to update the relevant score from each of the attributes. the idea behind this is that, significant attributes will be able to distinguish between instances that belong to different classes and have the same value from instances belonging to the same class [32]. key among the advantage of relieff filter method is its ability to deal with multiclass issues and its robustness and ability to deal with noisy and incomplete data [33]. relieff can be applied in virtually all situations because of its low bias. 4. feature selection and execution process as depicted in fig. 2, we divided our proposed ids defence solution for cluster-based heterogeneous wsn into three phases. the first phase in implementing a lightweight ids is to introduce an initial pre-process stage for the dataset prior to training. to achieve this, we use our proposed triple-filter method for ranking. by ranking, the features that are strong in determining the output class of the dataset are obtained and one-third split of the ranked features are selected (that is, 14 features). one-third features of the entire features in the dataset was arrived at after ranking and eliminating redundant features before the performance of the classifier start to decline. these features selected represents the most significant features among all the filter methods. in the second phase, the training phase, the features selected after pre-processing the nsl-kdd dataset are used to train the ids to detect possible attacks in the network. this is deployed on the cluster feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 323 head to monitor data from the sensor nodes to the base station. the final phase, the classification phase, is a process whereby a labelled training dataset is used to learn, before subsequently classifying a test data into one of the class labels [34]. anomaly detection techniques that use classification-based algorithms can be divided into two stages; the training stage and testing stage. in the training stage, labelled data are used to learn a particular classifier. subsequently, this classifier can be used in the test stage to classify a test instance as either normal or anomaly. in this work, we use decision tree classification algorithm to detect the occurrence of a dos attack. decision trees are data mining approach which are often called classifier trees or hierarchical classifiers and are used for prediction. it is a popular method because of its simple structure, ease to understand and the short time required to interpret [35]. during the classification process, the degree of adjustment of the model to the training set is very essential. when a tight stopping criterion is employed, it often creates a small and unidentified decision tree, while the algorithm with a loose stopping criterion, on the other hand, gives a larger decision tree that tends to over-fit the training dataset. decision tree has been embraced for classification and data analysis in fields, such as agriculture, environmental, health, etc. decision trees are recursive partition models that use a single variable to divide datasets at each level. initially, all sets of cases are defined to belong to the same class before a variable is selected, using a split criterion, to determine the attribute to insert in a node and branch. decision tree nodes consist of set of rules where each tree node is labelled with an attribute variable which creates a branch for each value. they are represented by a tree like structure, with the leaf nodes labelled with a class label [36]. from its original version of id3 (iterative dichotomiser 3), c4.5 and c5.0 has been developed as an advance version of id3 [35]. over the years, the c4.5 algorithm has been used in the literature as the standard model for supervised learning. during a classification process, a training dataset is used to train the decision tree algorithm while a test dataset is used to validate the model. when there is a new sample of a test dataset, a prediction can be made on the state of the class variable using the path of the tree from the root to the leaf node, for the tree structure and sample values. for example, let us consider a set s, and select a case at random belonging to class ct. to determine if the random sample belongs to the class ct, we find pi using the equation [37]: = ( ) (3) where { denotes the number of samples contained in the set . the information conveyed can therefore be represented by * + where is the probability distribution. the entropy of , which is the information conveyed by the distribution, can be expressed as follows: ( ) ∑ (4) where n is the length of the information. when a set of samples are segmented by using a non-categorical attribute x, we have a set * +where m is the number of samples. the weighted average is the information used in determining the class of an element and can be determined using the formula: 324 o. osanaiye, o. ogundile, f. aina, a. periola ( ) ∑ ( ) (5) therefore, the information gain can be computed as follows: ( ) ( ) ( ) (6) the eqn. 6 above expresses the difference between the information required to determine the value of an element of and the information required to determine having obtained the value of the attribute . this is therefore referred as the information gain due to attribute x. in this work, we use j48 decision tree classification algorithm, a version of the c4.5 for classification. fig. 2 proposed intrusion detection model 5. experimental results in this work, we use the combination of three filter methods during the pre-processing stage to select features from the labelled dataset, nsl-kdd. the most relevant features that are strong in determining the output class are ranked and chosen to be used by the machine learning algorithm to classify traffic packets as either normal or anomaly. weka software [38], a machine learning tool that consists of series of machine learning algorithms, is used for our experimental analysis. during classification, the parameters of weka are set to its default values. during evaluation, we determine the performance of our proposed triple-filter method by using an open source nsl-kdd dataset. the motivation behind the use of nsl-kdd in our work is because it is open source and readily available online. furthermore, nsl-kdd can be modified to suit different experimental attack scenario in wsn. the nsl-kdd is a labelled benchmark dataset developed from the initial kddcup’99 that presented some feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 325 shortcomings. the nsl-kdd consists of 41 features and 2 classes, labelled as either attack or normal. the features in the dataset are categorized into four groups, namely; basic features, content features, time-based traffic features and connection-based traffic features [9]. the attacks in the dataset are grouped into dos, probe, r2l and u2r; with these attacks divided into training set and test set. the training set consists of 21 attack types, while on the other hand, the test set consists of an extra 17 unique attack type [9]. in this work, we have modified the dataset and extracted the dos attack trace. dos attack is one of the most prevalent attacks on the resource constraint sensor nodes in wsn that depletes its energy and cause a denial of service. dos attacks on systems, often a times, are carried out using similar methods, however, its impact on different hosts varies. the feature selection process is carried out to determine the one-third slip (14 highest ranked features) of the nsl-kdd dataset using our proposed triple filter method, as shown in table 1. this experiment is performed on an hp 64bit windows 10 operating system with intel (r) core (tm) i7-4700mq cpu and 8gb of ram. we use 10-fold cross-validation to estimate the performance of our proposed classifier. in a 10-fold cross validation, data are split into 10 equal folds of same sizes prior to carrying out 10 iterations of training and validation. table 1 feature selection using filter method filter method feature selected gain ratio 12,26,4,25,39,6,30,38,5,29,3,37,34,33 chisquared 5,3,6,4,29,30,33,34,35,12,23,38,25,39 relieff 3,29,4,32,38,33,39,12,36,23,26,34,40,31 from table 1, it is seen that individual filter method has ranked the feature of the dataset according to its strength in determining the class. we have attached a weight to each ranking position, therefore, we determine the strongest features across the three filter methods, and cumulatively sum up the weights. table 2 presents the output of our triple-filter method, that is, the fourteen most important features. these fourteen features have been used as the input for training the decision tree classifier, j48 in weka. table 2 triple-filter feature selection method filter method feature selected triple-filter 3,4,29,33,34,39,12,5,30,38,26,25,23,6 6. performance measure during the evaluation of a classifier, different metrics such as classification accuracy, detection rate and false alarm rate can be used. these metrics are determinant on the measure of the true positive (tp), false positive (fp), true negative (tn) and false negative (fn). tp are the instances where attack packets are correctly classified, while situations of fp occur when certain amount of normal packets are misclassified as attack (false alarm). tn, on the other hand, are situations where normal packets are correctly classified, whereas, fn are instances where packets are classified as normal, when indeed they are attacks. recently developed ids for detecting attacks in wsn requires a relatively high detection rate with low false alarm. as discussed, in this work, we consider the classification 326 o. osanaiye, o. ogundile, f. aina, a. periola accuracy, detection rate and false alarm rate of our triple-filter method. we compare these metrics with the performance of the full dataset containing all the features and each of the filter methods using j48 classifier. the metrics used for comparison are defined as follows. 1. classification accuracy: this is defined as the ratio of the data defined correctly to that of the entire dataset in percentage. the accuracy of a proposed technique can be derived using the formula: ca= × 100% (7) 2. detection rate: detection rates is usually based on the confusion matrix and can be determined by using the formula dr = × 100%. (8) 3. false alarm rate: this is the amount of normal data that are misclassified as attack during detection. the false alarm rate can be determined by using the formula: far = × 100% (9) table 3 presents the performance measure of our proposed ids defence solution with respect to the classification accuracy, detection rate, and false alarm rate. 7. discussion intrusion detection in wsn during an attack can further increase the complexity and resource consumption of the sns. thus, filter methods for feature selection when compared to wrapper methods are fast and easy to interpret. however, previous research has shown that it cannot determine features that are strong as a group but weak individually [39]. we have chosen to deploy our proposed ids on the cluster heads because we assume that the cluster heads have better battery life with a higher software and hardware capability as compared to the other nodes. fig. 3 shows the classification accuracy across different filter feature selection methods and our triple-filter method. fig. 3 classification accuracy for different filter methods 98.60% 98.80% 99.00% 99.20% 99.40% 99.60% 99.80% accuracy full set gain ratio chi-squared relieff triple-filter feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 327 as shown in fig. 3 and table 3, our proposed method exhibits the best accuracy performance. it presents a slight improvement of 0.01 % as compared to chi-squared filter method which gives the second best accuracy performance. in fig, 4, the detection rate across the different filter methods and our proposed triple-filter is presented. the result shows that our proposed filter method with 14 selected features offers the best detection rate in comparison with the other filter methods. as shown in table 3 and fig. 4, the triple-filter method offer a slight increase in detection rate of 0.02% when compared with the next best filter feature selection method. fig. 4 detection rate for different filter methods for the false alarm rate, relieff presents the worst result of 0.87% while the full dataset (with the entire features) showcase the best performance, 0.38%. our proposed method presents a false alarm rate of 0.42% as shown in fig 5. although, our proposed triple-filter method do not offer the best false alarm rate, it is still suitable in real-time wsns because it offer good classification accuracy and detection rate at a reduced complexity. note that a lightweight ids is an important requirement in order to prolong the lifetime and functionality of sensor networks. fig. 5 false alarm rate for different filter methods 98.60% 98.80% 99.00% 99.20% 99.40% 99.60% 99.80% 100.00% detection rate full set gain ratio chi-squared relieff triple-filter 0.00% 0.20% 0.40% 0.60% 0.80% 1.00% false alarm rate full set gain ratio chi-squared relieff triple-filter 328 o. osanaiye, o. ogundile, f. aina, a. periola table 3 performance comparison of the triple-filter with full dataset, gain ratio, chi-square and relieff filter methods no of features accuracy detection rate false alarm rate full set 41 99.56% 99.49% 0.38% gain ratio 14 99.60% 99.68% 0.47% chi-squared 14 99.66% 99.74% 0.41% relieff 14 99.08% 99.02% 0.87% triple-filter 14 99.67% 99.76% 0.42% finally, we compared the triple-filter method with a similar work in [10]. table 4 presents the performance comparison of the proposed triple-filter method with the work in [10]. table 4 performance comparison of the triple-filter with the work in [10] filter method classifier no of features accuracy detection rate false alarm rate svm-rfe [32] bpn 24 99.75% 95.13% 2.06% triple-filter j48 14 99.67% 99.67% 0.42% as presented in table 4, the triple-filter feature selection, with 14 features, present an improvement in the detection rate and the false alarm rate as compared with the work in [10] using the nls-kdd dataset. this shows the efficiency of our proposed triple-filter feature selection method in improving the detection rate of the decision tree classifier with minimal false alarm while conserving the limited resources of the sensor network. 8. conclusion and future work in this paper, we have proposed the combination of three filter feature selection methods, gain ratio, chi-squared and relieff, called triple-filter, to pre-process dataset prior to attack classification. the proposed feature selection method is deployed in a heterogeneous cluster-based wsn, where the ids is implemented on the cluster head nodes. the proposed ids reduce the complexity of the system by selecting important features in the dataset, thus reducing the features from 41 to 14 before classification, using a decision tree algorithm, j48. experimental results obtained show an improved performance with reduced feature set from 41 to 14. also, our proposed triple-filter feature selection method performed better than individual filter methods using j48 classifier. in the future, we seek to extend our work to study the effect of our solution on homogeneous wsns and also to evaluate our proposed triple-filter feature selection on other classification algorithms. references [1] i. almomani, b. al-kasasbeh, m. al-akhras, “wsn-ds: a dataset for intrusion detection systems in wireless sensor networks”, journal of sensors, pp. 1–16, 2016. [2] c. o'reilly, a. gluhak, m. a. imran, s. rajasegarar, “anomaly detection in wireless sensor networks in a non-stationary environment”, ieee communications surveys & tutorials, vol. 16, pp. 1413–1432, 2014. feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network 329 [3] o.o. ogundile, a. s. alfa (2017), “a survey on an energy-efficient and energy-balanced routing protocol for wireless sensor networks”, sensor, vol. 17, 1084, 1–51, 2017. [4] o. osanaiye, a. alfa, “denial of service defence for resource availability in wireless sensor networks”, ieee access, vol. 6, pp. 6975–7004, 2018. [5] h.m. salmon, et al, “intrusion detection system for wireless sensor networks using danger theory immune-inspired techniques”, international journal of wireless information networks, vol. 20, pp. 39–66, 2013. [6] v. f. taylor, d. t. fokum, “mitigating black hole attacks in wireless sensor networks using noderesident expert systems”, in proceedings of the ieee wireless telecommunications symposium (wts), pp. 1–7, 2014. [7] s. athmani, d.e. boubiche, a. bilami, “hierarchical energy efficient intrusion detection system for black hole attacks in wsns”, in proceedings of the ieee world congress computer and information technology (wccit), pp. 1–5, 2013. [8] o. osanaiye, r. choo, m. dlodlo, “distributed denial of service (ddos) resilience in cloud: review and conceptual cloud ddos mitigation framework”, journal of network and computer applications, vol. 69, pp. 1447–1465, 2016. [9] m. tavallaee, e. bagheri, w. lu, a. ghorbani, “a detailed analysis of the kdd cup 99 dataset”, in proceedings of the second ieee symposium on computational intelligence for security and defence applications cisda, pp. 1–6. [10] wang s.-s., yan k.-q., wang s.-c., liu c.-w. (2011) an integrated intrusion detection system for cluster-based wireless sensor networks. expert systems with applications, 38, 15234–15243. [11] o. osanaiye, h. cai, k.k.r. choo, a. dehghantanha, z. xu and m. dlodlo, “ensemble-based multifilter feature selection method for ddos detection in cloud computing” eurasip journal on wireless communications and networking, vol. 130, pp. 1–10, 2016. [12] x. deng, “an intrusion detection system for cluster based wireless sensor networks”, in proceedings of the 16th ieee international symposium on wireless personal multimedia communications (wpmc), 2013, pp. 1–5. [13] k. q. yan, s.c. wang, s.s. wang, c.w. liu, “hybrid intrusion detection system for enhancing the security of a cluster-based wireless sensor network”, in proceedings of the 3rd ieee international conference on computer science and information technology (iccsit), vol. 1, 2010, pp. 114–118. [14] k. medhat, r.a. ramadan, i. talkhan, “distributed intrusion detection system for wireless sensor networks”, in proceedings of the 9th ieee international conference on next generation mobile applications, services and technologies, 2015, pp. 234–239. [15] m. tiwar, k.v. arya, r. choudhari, k. s. choudhary, “designing intrusion detection to detect black hole and selective forwarding attack in wsn based on local information”, in proceedings of the 4th ieee international conference on computer sciences and convergence information technology iccit'09, 2009, pp. 824–828. [16] a.p.r. da silva, et al, “decentralized intrusion detection in wireless sensor networks” in proceedings of the 1st acm international workshop on quality of service & security in wireless and mobile networks, 2005, pp. 16–23. [17] jong k., marchiori e., sebag m., van der vaart a. (2004) feature selection in proteomic patten data with support vector machines. symposium on computational intelligence in bioinformatics and computational biology, 41–48. [18] j. yick, b. mukherjee, d. ghosal, “wireless sensor network survey”, computer networks, vol. 52, pp. 2292–2330, 2008. [19] i. f. akyildiz, w. su, y. sankarasubramaniam, e. cayirci, “a survey on sensor networks”, ieee communications magazine, vol. 40, pp. 102–114, 2002 [20] j. heidemann, et al, “research challenges and applications for underwater sensor networking” in proceedings of the ieee wireless communications and networking conference, wcnc, 2006, pp. 228– 235. [21] i. f. akyildiz, t. melodia, k. r. chowdhury, “a survey on wireless multimedia sensor networks”, computer networks, vol. 51, pp. 921–960, 2007. [22] a. abduvaliyev, a.-s. k. pathan, j. zhou, r. roman, w.-c. wong, “on the vital areas of intrusion detection systems in wireless sensor networks”, ieee communications surveys & tutorials, vol. 15, pp. 1223–1237, 2013. [23] y. yu, k. li, w. zhou, p. li, “trust mechanisms in wireless sensor networks: attack analysis and countermeasures”, journal of network and computer applications, vol. 35, pp. 867–880, 2012. 330 o. osanaiye, o. ogundile, f. aina, a. periola [24] c.c. su, k.m. chang, y.h. kuo, m.f. horng, “the new intrusion prevention and detection approaches for clustering-based sensor networks”, in proceedings of the ieee wireless communications and networking conference, vol. 4, 2015, pp. 1927–1932. [25] m. h. anisi, a. h. abdullah, s. a. razak, “energy-efficient and reliable data delivery in wireless sensor networks”, wireless networks, vol. 19, pp. 495–505. [26] p. kuila, p.k. jana, “energy efficient loadbalanced clustering algorithm for wireless sensor networks”, procedia technology, vol. 6, pp. 771–777, 2012. [27] p. kuila, s. k. gupta, p.k. jana, “a novel evolutionary approach for load balanced clustering problem for wireless sensor networks”, swarm and evolutionary computation, vol. 12, pp. 48–56, 2013. [28] p. kuila, p.k. jana, “approximation schemes for load balanced clustering in wireless sensor networks”, journal of supercomputing, vol. 68, pp. 87–105, 2014. [29] r. xie, x. jia, “transmission-efficient clustering method for wireless sensor networks using compressive sensing”, ieee trans. parallel distrib. syst., vol. 25, pp. 806–815, 2014. [30] o. a. osanaiye, ddos defence for service availability in cloud computing. doctoral dissertation, university of cape town, 2016. [31] v. bolon-canedo, n. sanchez-marono, a. alonso-betanzos, “a review of feature selection methods on synthetic data”, knowledge and information systems, vol. 34, no. 3, pp. 483–519, 2013. [32] c. j. mantas, j. abellan, “credal-c4. 5 decision tree based on imprecise probabilities to classify noisy data”, expert systems with applications, vol. 41, pp. 4625–4637, 2014. [33] h.f. eid, a.e. hassanien, t.h. kim, s. banerjee, “linear correlation-based feature selection for network intrusion detection model”, in advances in security of information and communication networks, pp. 240–248, 2013. [34] m.b. yassein, y. khamayseh, m. abujazoh, “feature selection for black hole attacks”, journal of universal computer science, vol. 22, no. 4, pp. 521–536, 2016. [35] j. gehrke, v. ganti, r. ramakrishnan, w.y. loh, “boat-optimistic decision tree construction” in acm sigmod record, vol. 28, pp. 169–180, 1999. [36] n. sanchez-marono, a. alonso-betanzos, m. tombilla-sanroman, “filter methods for feature selection a comparative study”, intelligent data engineering and automated learning-ideal, pp. 178-187, 2007. [37] n. sengupta, j. sen, j. sil, m. saha, “designing of on line intrusion detection system using rough set theory and q-learning algorithm”, neurocomputing, vol. 111, pp. 161-168, 2013. [38] http://www.cs.waikato.ac.nz/ml/weka/, [online] access 2nd august 2017. [ 39] o. osanaiye, r. choo, m. dlodlo, “analysing feature selection and classification techniques for ddos detection in cloud”, in proceedings of the southern africa telecommunication, pp. 198-203, 2016. facta universitatis series: electronics and energetics vol. 34, no 4, december 2021, pp. 631-645 https://doi.org/10.2298/fuee2104631c original scientific paper a review on the pursuit of an optimal microwave absorber soma chakraborty1, soumik chakraborty2 1department of electronics and communication engineering, indian institute of information technology, nagpur, maharashtra-441108, india 2department of electronics and instrumentation engineering, nit silchar, assam-788010, india abstract. mitigation of the electromagnetic radiations is essential for reliable communication of information. the challenges lie in achieving sufficiently good absorption over a broad range of frequencies. considering the applications in airborne and handheld devices where light weight, thin, conformable and broadband absorbers are desired, numerous techniques and methods are applied to design broadband absorbers. in this review paper, a detailed analysis on electromagnetic absorbers including evolution, the materials used, and characteristics such as absorption efficiency over the years is presented. progress on recent research on various polymerbased and metamaterialbased microwave shields are included along with their findings. several prospects such as broadbanding, flexibility, multibanding are described here. various material and structural composition offering good absorption performance in different frequency bands are also summarized whose the techniques can be used for suppressing electromagnetic interference and radar signature. the paper specifies the aspects one encounters while designing and realizing a perfect microwave absorber. explored here are several works of distinguished authors which are based on various techniques used to achieve good absorption performance with ease of mounting. key words: absorber, electromagnetic, metamaterial, microwave, bandwidth 1. introduction electromagnetic emissions are usually generated and transmitted during the operation of wireless and electronic devices. beyond a certain level, these emissions cause operational interferences and are classified as electro-magnetic interferences (emi). growth in modern high speed electronic devices packaged alongside the electromagnetic wave emitting sources in devices such as cellular telephony, wi-fi, bluetooth, etc. are posing newer challenges for the designer. in addition, these multitude of applications have created an received may 16, 2021; received in revised form august 20, 2021 corresponding author: soma chakraborty department of electronics and communication engineering, indian institute of information technology, nagpur, maharashtra-441108, india e-mail: soma.ch15@gmail.com 632 s. chakraborty, s. chakraborty even more congested electromagnetic environment leading to operational challenges of systems in close proximity [1]. the electromagnetic vulnerability and radiation hazard have to be controlled for obtaining an electromagnetically compatible (emc) environment by reducing emi. microwave absorbers/shields are generally used to sufficiently reduce emi. traditional microwave absorbers can be dielectric, magnetic or magneto-dielectric. the structures consist of one or more filler materials reinforced in a matrix material thus forming a composite with or without a metal back. the electrical or magnetic properties of these materials can be altered to achieve high absorption (reflection loss) over broadband frequencies. although dielectric microwave absorbing materials achieve good absorption performance, however, thickness of the absorber increases by many orders to get good attenuation. for effective absorption there should be minimum reflection from the absorber surface. when the two reflected waves are out of phase they cancel each other and so reduce reflection. this is possible if the two waves destructively interfere, i.e., have a path difference of  / 2. since the wave travelling twice the thickness of the absorber (t) is equal to odd multiple of g / 4, where, λg = λ0 ∕ (|εr||μr|)1∕2 where, |r| and |r| are the moduli of complex permittivity (r) and complex permeability (r) respectively. the magnetic component of absorber improves matching at the air-absorber interface (z′ = √μ ε⁄ ). magnetic losses along with dielectric losses enhance attenuation of the incident wave resulting in reduced thickness of the absorber as the guide wavelength reduces by a factor of 1 √με⁄ . magnetic materials offer an effective way of alternating electromagnetic waves by way of better impedance matching at the interface of the absorber and also reducing its thickness. then, there are metamaterial absorbers which are artificially engineered homogenous materials consisting of periodic unit cells that possess electromagnetic characteristics not found in natural materials [2]. the word “meta” means beyond, and “metamaterials” stand for the artificial composite materials. the homogeneity condition is attained by realizing the dimension of the unit cell size (a) much smaller than the wavelength of the incident wave in the guided medium and the effective homogeneity condition is satisfied for a ≤ λg/4. the structure consists of top and bottom conducting layers isolated by a dielectric interlayer. the dielectric layer in the middle controls the input impedance and impedance matching, yielding to equivalent inductances (l) and capacitances (c) which form a lc equivalent circuit. since both electric and magnetic fields are involved in em wave propagation, permeability (µ) together with permittivity (ɛ) plays an important role in absorber performance. fig. 1 schematic representation of absorbing type emi shielding mechanism a review on the pursuit of an optimal microwave absorber 633 a schematic representation of the various wave components involved in absorption is shown in figure 1. design of microwave absorbers with enhanced absorption performance requires two important conditions to be satisfied: impedance matching characteristic and attenuation characteristic. when electromagnetic wave is incident on an absorber, reflection takes place at the free space-absorber interface due to mismatch in impedance. reflections can be minimized if impedance of the absorber is matched to the free space impedance, resulting in penetration of the wave into the absorber, which is the first condition. within the absorber, dissipation of radio frequency (rf) energy is maximized resulting in rapid attenuation of the amplitude as it propagates in the absorber structure. this is the second condition. hence, in this review, an effort has been made to describe the need of a polarization insensitive microwave absorber offering optimal broadband absorption up to a wide angle of incidence with minimum thickness, as well as cost. 2. absorbers the archives investigations on electromagnetic wave absorbers started in the netherlands with the first known absorber being patented in 1936 which was a quarter-wave resonant type structure comprising of carbon black (cb) and tio2. carbon black provides the dissipation, and a high dielectric constant can be achieved using tio2 for reduced thickness [3]. absorbers were first used practically during the world war ii (1939-1945) where germany used two types of absorbing materials for camouflaging of submarines and periscope [4, 5]. one of them is the “wesch” material in the form of a rubber sheet of about 0.3 inches thickness infused with carbonyl powder of a grid-like structure resonating at 3 ghz. the other is the “jauman” absorber of about 3 inches thickness consisting of rigid plastic and resistive sheets placed alternately with decreasing resistances providing a gradual transition from a low to a high loss medium with a reflection loss of more than -20 db over the range of 2-15 ghz. it was during this period when j. l. snoek explored the possibility of ferrite to be used as absorber [6]. during 1941-1945, materials known as “harp” (halpern-anti-radarpaint) were used by the united states for airborne and shipborne applications in the xband. reflection loss of the absorbers used were in the range of 15-20 db at resonance. the absorbers which were used for air-born environment contained disc shaped aluminum flakes (high dielectric constant of 150) infused in rubber and cb where as the absorbers used for ship borne environment consisted of a high concentration of iron particles binded by neoprene rubber (dielectric constant of 20) having thickness of 0.025 inches and 0.07 inches respectively. the magnetic permeability of the iron shows resonance behavior at such high frequencies. around that time, another absorber, commonly known as salisbury screen absorber, was also developed in the radiation laboratory [7]. a quarter-wavelength absorber having a resistive sheet (clothes coated with graphite) of around 377 ohm located at a distance of quarter wavelength behaved as a resonating structure. this arrangement where at one side of a slice of 0.75 inches thick wood a resistive cloth (known as uskon cloth) was adhered and metal foil to the other side, showed resonance at 3 ghz with absorbance over 20-30 % of the frequency range when used practically. 634 s. chakraborty, s. chakraborty simultaneously, structurally modified absorbers were being investigated by the radiation laboratory. it was observed that reflections were reduced to normal incidence while using long pyramidal shaped absorber structures due to absorption of multiple reflections generating in the direction of the vertex of the pyramid. proper impedance matching can be achieved by using graded and tapered absorbers as they provide progressive transition of the impedance [8-11]. broad banding was experimentally achieved by many organizations using several structurally modified absorber surfaces such as cones, hemispheres and wedges. few filler materials included carbon, graphite, iron oxide, powdered iron, aluminum and copper, steel wool, metal wires, etc. which were loaded into plaster of paris, various plastics and ceramics to be used as free-space absorbers. 3. traditional absorbers broad banding aspects in the early 1950s, the commercial “hair” broad-band absorber was manufactured by drenching animal hair into carbon black by emerson in the us. the absorbers were 2 inches, 4 inches and 8 inches thick attaining a reflection coefficient of around -20 db for normal incidence over the frequency range of 2400-10000 mhz, 1000 mhz and 500 mhz, respectively. buckley at emerson & cuming, inc. redesigned the hair absorbers to show an improved performance of -40 db reflection coefficient when the front surface is convoluted. a schematic of the first dallenbach layer magnetic absorber, shown in figure 2, was patented using ferrite materials [12]. in the course of this period, meyer, a german scientist presented few innovative concepts associated with microwave absorption such as resistance loaded loops and dipoles, slotted resistive foils, strips of magnetic & resistive materials with different inclinations, magnetic loading etc. this is how research into frequency selective surfaces (fss) aspects came into being. fig. 2 a schematic of single layer dallenbach absorber magnetic materials as possible absorber’s fillers were inspected continuously during 1960’s and 70’s [13]. in the late 1960’s, suetake in his patent described a broadband absorber structure of thickness 12.3 inches comprising of a graphite-made zig-zag wall inclined at the front of a ferrite plate with reflective coefficient less than 0.1 in the frequency range of 0.1 to 1 ghz [14]. also, absorption was controlled by coating several structured absorbers such as foams, netlike or honeycomb structures with some paint-like a review on the pursuit of an optimal microwave absorber 635 material containing carbon particles or fibres, or alloys of different metal like nickel chromium alloy, etc. [15]. another type of absorbers employing plasma as the absorbent which could be generated by a radioactive substance requiring about 10 curies/cm2 was studied by m. e. nahmias in his patent, which was a conjecture by then [16]. evolution in the material aspect as inclusions and also in design process were the key factors of 1980’s in absorber development. jaumann absorbers were modified in design point of view by using graded layers so as to achieve high absorption bandwidth. theoretical design of absorbers saw the rise in this era using computational models like transmission line models, floquet theorem to calculate reflectivity from material properties and to study periodic structures, respectively. dielectric materials were renovated by including fillers like rods, wires, disc, etc., which exhibited promising results and also conducting polymers, such as low-density polyacetylene, which were all studied as a possible candidate for absorption [15, 17]. in the year 1988, experiments conducted by the department of defense, us related to rcs reduction validated the use of a class of schiffbase salts by dissolving in aircraft structural materials. this substance which was much lighter than ferrites had been used as radar absorbing paint for stealth aircrafts [18]. chiroshield, a thin salisbury shield made of chiral materials was introduced in 1989, offering increased absorption rate with low thickness for a wide range of frequencies compared to the conventional ones. either chirality could be incorporated into the prevailing materials or new chiral composites could be fabricated. there is a mutual coupling and induction of electric and magnetic fields within a chiral medium and the losses in permittivity imitate losses in permeability and vice-versa [19]. many optimization techniques such as genetic algorithm was used to optimize the structures of jaumann absorbers along with deep research into circuit analog absorbers, and fss, to continue in the 1990’s. absorber composites made with different fibres or netlike structures being coated with conducting polymers were also on the rise. tunable resonant absorbers made of conducting polymers were also investigated by varying the resistive and capacitive elements in the absorber until 1991 when carbon nanotubes (cnts) came into light which were discovered by lijima [15, 20]. thus, cnts paved the foundation for a new type of radar absorbing materials which consists of nanoparticles. until the invention of cnts, carbon fillers such as carbon black, graphite, expanded graphite, etc. continued to be used as radar absorbing materials. single-walled and multi– walled cnts have been extensively utilized showing wide microwave absorption. high absorption properties could be achieved by using a low weight percentage of cnts because of their high aspect ratios (= length/diameter) which helps in attaining low percolation threshold at very low loading [21]. in addition to cnts, their 3d structures such as graphene nanosheets, graphene oxide and reduced graphene oxide have also been prepared using different chemical methods of preparation for radar absorber applications [22]. being light weight, flexible, corrosion resistant makes graphene one of the attractive materials to be used as a component of em wave absorbing materials like any other carbonbased materials which possess extraordinary advantages of low density, high thermal stability and high chemical [23, 24]. unfortunately, the direct application of graphene in em absorption is restricted due to its high εr value which causes impedance mismatch [25, 26]. efforts have been made to improve matching by mixing them with different magnetic fillers [27] and by using modified graphene (rgo). but this also resulted in some other downsides, such as aggregation, restacking, and the need of high filler content, which again hampers the 636 s. chakraborty, s. chakraborty practical applicability. then, the concept of ‘plainification’ appeared where instead of adding more amount fillers, an interface type of structure is included to achieve superior properties [28–30]. this required fine adjustment of the structure and the process remains challenging. recent study on development of em shielding materials based on plant based cellulose nanofibres have shown the path of using environmental friendly materials. the material is a light weight, conductive and porous cellulosepolyaniline aerogel with a thickness of 5 mm which shows 95% absorption in the x-band and a real time heat dissipation behavior using a mobile phone with a great prospective for applications in portable electronics [31]. lately, studies related to wear-on-body microwave communication have been introduced where textiles are coated with em shield materials so as to prevent any adverse effect of using electronic devices on our health. with a thickness of 2.236 mm, coating layers of composites where conductive polymer mixtures incorporating metallic nanoparticles, nanowires or carbon based nanostructures along with conventional textiles are used [32, 33], which provides shielding effectiveness of more than 20 db over the x-band. nevertheless, including such coatings on textiles still remains a challenge due to conformability and washability issues. an interesting approach towards tunable absorbers was experimentally studied by estevez et al. where two different hybrid fillers (cnt/aw and rgo/aw nanowires) were bound by silicone resin in x-band. the polarization loss originating from the interfacial polarization relaxations at the interfaces of cnt-resin & cnt-wire leads to higher dielectric losses. the domain wall motion due to the wires leads to the ferromagnetic resonance and contributes to the magnetic losses. tuning of the absorber is thus controlled by the amount of cnt coating which guides interfacial interactions. a high reflection loss of -35 db is obtained for rgo coating thickness of 2.7 mm at 11.3 ghz [34]. tunable em wave absorption and shielding was achieved at a thickness of 1.65 mm by growing cobalt nanoparticles embedded variable length cnts on natural cotton using cvd method. the highly elastic and easily compressible absorbers are light weight showing absorption intensity as -43 db and also shields 99% of incident wave over a bandwidth of ~5 ghz in the frequency range from 2-18 ghz. cnts with shorter length and less conductivity is favorable for microwave absorption, whereas with longer cnts the conductivity increases which enhances the shielding effectiveness [35]. 4. metamaterial absorbers the origin in the quest of a perfect absorber, the use of metamaterial provides an encouraging solution to the problem of electromagnetic interference. metamaterials are usually structured geometrically as a periodic arrangement of unit cells (metallic or dielectric elements) demonstrating wave characteristics that do not exist in nature and thus are often described as artificially engineered homogeneous medium [2]. depending on the size and shape (geometry) of the unit cells, the electromagnetic properties such as permittivity (ϵ) and permeability (μ) can be altered to a wider range including negative values. developing thin metamaterial absorbers possessing characteristics such as conformability and fabricability with high absorption over a wide bandwidth is still in progress. few pioneering works in this field is discussed here, starting with the origin of concept. it was in the years 1996 and 1999, when john pendry along with his group, first experimentally realized the concept of negative permittivity and negative permeability respectively. absorption in a review on the pursuit of an optimal microwave absorber 637 metamaterial-based absorbers is of a resonant type and the frequency is regulated by the rise of inductance and capacitance due to the dimensions of unit cells of the structure. the first metamaterial absorber was based on split-ring resonator (srr). an array of srrs were placed periodically in x-z plane on a resistive sheet of 1mm thickness providing a resistance of 377 ω like salisbury screen with minimum s11 being observed at around 2 ghz [36]. then, the idea of electric ring resonator (err), also known as electric field driven lc resonator (elc) based absorbers was presented, where at the top of the surface the incident e-field causes the flow of current and it gets stored within the metallic patches producing inductance and capacitance. here, fr-4 substrates are used as a dielectric material on top of which unit cells are patterned as shown in figure 3. an absorption peak of 96% was observed at around 11.65 ghz [37]. since these absorbers had less absorption bandwidth, a 3-d microwave absorber was then developed combining the elc and srr structures for broadband absorption which exhibited a peak absorption of 99% at 2.4 ghz [38]. the relatively thin λ/5 thickness of elc-srr structure in the propagation direction makes it more beneficial, when compared to the typical λ/2 or greater thickness of traditional foam pyramidal absorbers. also, lumped circuit elements could be added to this structure to initiate tunability. fig. 3 a schematic of the unit cell in electric ring resonator (err) 4.1. multiple banding it was in the year 2010, when a triple layered unit cell structured metamaterial absorber was developed by li et al., and a dual band resonant behavior was observed at 11.15 ghz and 16.01 ghz with maximum absorption of 97% and 99% respectively [39]. the structure incorporates a cross-shaped resonator (csr) and complementary cross-shaped resonator (ccsr) in one unit cell, to make it compact. it also displays improved impedance matching the free space due to the mutual coupling effect between the two resonators. the ohmic loss and the dielectric loss account for the absorption, since there exists electrical resonance which leads to ohmic loss. in 2013, bhattacharyya et al. obtained a triple band polarization independent absorption by using different combination and size of square-shaped closed ring resonators [40]. the surface current distribution around the square rings control the overall permeability of the structure, thus leading to absorption at different frequencies. the absorber exhibited a triple band absorption response with one band lying in x-band and two in c-band. likewise, an arrangement of concentric squares and circular rings explored the polarization insensitiveness with triple band metamaterial absorbers [41, 42]. to improve the absorption bandwidth, metamaterial absorber based on sectional asymmetric structures was realized using cst studio suite by gong et al. [43], which had thickness of 1.9 μm and was composed of au and si3n4. due to the resonant behavior of the metamaterial, these absorbers suffer from narrow absorption bandwidth, limiting their usage in applications. for broadband absorption multilayering is one of the techniques which is used in metamaterial absorbers also. 638 s. chakraborty, s. chakraborty lee and lee implemented multiresonance structures of different geometric dimensions into a single unit cell to widen the working bandwidth. the structure is 0.8 mm thick and demonstrates a maximum absorption of 93% at 10 ghz with a bandwidth of 970 mhz [44]. the different mixture of unit cells with small difference in the scaling factor between cells having varying geometric dimensions when arrayed periodically demonstrates resonant absorption peaks overlapping and thus increasing the bandwidth. if the scaling factor between the cells increases, it shows split distinct resonant peaks. dual and triple band metamaterial absorbers with wideband absorption was developed by kollatou et al. by utilizing scalability property of metamaterials [45]. special arrangements of donut-based resonators as shown in figure 4 were also implemented in order to achieve multiband absorption. multiple absorption peaks of 97%, 97%, 98% and 98% were observed at 6.5 ghz, 7.4 ghz, 9.2 ghz and 11.0 ghz respectively [46]. 4.2. broadbanding another technique for widening the absorption bandwidth was attempted by gu et. al. where different sizes of hexagonal metal dendritic units are closely placed to combine absorption peaks of each unit an isotropic ma. absorption greater than 80% is observed for normal incidence and oblique incidence for less than 45° in the frequency range from 9.05 ghz to 11.4 ghz [47]. as the unit cell of a symmetrical structure can resonate identically for different polarizations, there were several investigations on polarization insensitive absorbers using highly symmetrical structures, such as rotational structure [48], four-fold symmetrical structure [49], or higher order symmetrical structures [50]. then, using the property of high absorption of magnetic materials a two-layered hybrid absorber was implemented by li et al., where non-planar metamaterial was integrated with magnetic absorbing materials to observe 90% absorption over the range from 2 to 18 ghz [51]. the top layer is an arrangement of metal aluminium unit cells stacked on a metal backed magnetic layer which is composed of carbonyl iron flakes powder infused in epoxy with a weight ratio of 2.65:1. although the structure has the advantage of inheriting the characteristics of both magnetic absorber and non-planer metamaterial absorber for broadband absorption and absorption at lower frequency range respectively, the structure is quite complex so that might cause several fabrication errors. following this, yin et al. developed a less complex, polarization independent and thin broadband metamaterial absorber by using two tapered hyperbolic metamaterial waveguide arrays of different dimensions which has 90% absorption bandwidth from 2.3 to 40 ghz [52]. the absorption bandwidth is enhanced by appropriate selection of geometrical boundaries for each hyperbolic metamaterial waveguide connected in some pattern. a wideband double layer circuit analog absorber involving an upper layer which contains an arrangement of resistor-loaded square loops printed on dielectric substrates was realized by ghosh et al. the layers are separated by an air spacer adding to a total thickness of 4.6 mm. the bottom layer helps in increasing the total bandwidth and produces new fig. 4 schematic of a donut-shaped resonator a review on the pursuit of an optimal microwave absorber 639 resonance when the wave is incident normally. the absorber exhibits 90% absorption from 5.10 to 18.08 ghz. however, fabrication of such absorbers is difficult [53]. a wideband switchable metamaterial absorber was investigated by kim et al. where lumped elements and microfluidic channels with liquid metal alloy are combined in order to reduce rcs for x-band and c-band [54]. the metamaterial absorber incorporated chip resistors and a modified jerusalem cross resonator (jcr) which was adjusted by loading slotted circular rings into the whole structure. the jcr consists of slotted circular rings, resistors and microfluidic channels. the absorber was fabricated on a flexible substrate and the microfluidic channels are imprinted on a polydimethylsiloxane (pdms) material. absorption rate of 90% was observed covering almost the x-band from 7.43 to 14.34 ghz and the cband from 5.62 to 7.3 ghz, with empty channels and liquid metal-filled channels, respectively. water has been used in designing microwave absorbers because of its frequency dispersive nature at microwave frequencies and also being abundantly available all over the world [55, 56, 57]. following this, yoo et al. designed a series of metamaterial absorbers with four different substrates, viz., fr-4, pet, paper and glass material in the frequency range from 8-18 ghz, using periodic arrangement of water droplets which actas a resonator [58]. each droplet is placed on the top layer of the structure with proper height and diameter, controlling the absorption and bandwidth for an overall absorber thickness of 2.36 mm. absorption rate of 93% on fr-4, pet, paper and glass substrates was observed in the frequency range of 8.3–12.07 ghz, 11.23–12.36 ghz, 9.2–16.5 ghz and 12.05–12.65 ghz, respectively. in another research carried out by pang et al., where a water based metamaterial absorber of 3.5 mm thickness was used by incorporating water as a dielectric substrate [59]. the hybrid substrate being a combination of water and a low-permittivity material allows a leak-proof structure which can be easily fabricated presenting a 90% wideband absorption from 6.2 to 19 ghz. in one of the other works, distilled water filled dielectric reservoir based ultra-thin three dimensional water-substrate array organized periodically on a metal back metamaterial absorber were used. a triangular shaped metallic fishbone structure was also incorporated in between water-substrate and dielectric reservoir periodically attaining an ultra-broadband absorption in the frequency range from 2.6 to 16.8 ghz [60]. recently, in the year 2019, a low cost flexible water-based metamaterial using 3d printing technology was proposed which offered 90% absorption over the broad frequency range of 5.9-25.6 ghz. the overall thickness of the structure was 4mm where distilled water was selected as the absorbing material and thermoplastic urethane was used to hold the water. the absorber is insensitive to polarization and shows good microwave absorption performance in wide-angle of incidence [61]. another ultraband metamaterial absorber was presented where tetramethylurea was added to water in order to alter the dielectric properties and this solution was used for absorption. the four-layered structure achieved an absorption of 90% covering the frequency range of 4.3 to 40 ghz [62]. an ultra-broadband polarization-insensitive metamaterial absorber was developed by munaga et al. which presented 10-db absorption bandwidth in c-band (3.78–8.28 ghz) during normal incidence with the incident angle less than 45° [63]. further investigation on broadband absorber was done by hoa et al. who reported a polarization insensitive absorber by incorporating a rotational symmetrical multilayer structure [64]. the absorber was based on periodic arrangement of metallic/dielectric conical frustums which show 90% absorption with large angle of incidence up to 60°. another four-layered 4.2 mm thick ultra wideband ionic liquid based metamaterial absorber was designed using 3d printing technology. [emim] [n(cn)2] was chosen due to its highly lossy nature which was injected 640 s. chakraborty, s. chakraborty in a periodic arrangement of photopolymer cylindrical array via 3d printing. absorption rate of 90% was reported in the frequency range of 9.26–49 ghz along with good high absorption performance for oblique incidence of 45°. using a low dielectric constant photopolymer material as a top layer, the impedance matching was improved [65]. a switchable c-band polarization insensitive absorber composed of a periodic arrangement of square loops along with pin diodes to provide switching between single band and multiband absorption was reported by ghosh et al. [66]. to provide bias voltage to all the switches a biasing network has been implemented without disturbing the resonance of the structure. the 4-axial symmetrical design of the structure provides polarization insensitiveness for all angles. the broadband switchable structure under normal incidence for off state exhibits 10 db absorption bandwidth of 4.66 ghz (3.56 8.16 ghz), whereas for on state good reflection value is observed for the whole frequency range. a dual-band metamaterial absorber structure consisting of two circular rings showing absorption with oblique angles larger than 60° was designed and studied by ayop et al. [67]. in the year 2016, another dual-band absorber symmetrical structure consisting of a rectangular ring, a cross and a slotted cross design was realized by the same team with angle of incidence of more than 77° with for x-band [68]. 4.3. conformability development of conformable absorbers is the need of the hour so that absorbers can be easily mounted on any surface. a flexible metamaterial absorber using printing technology was presented for cylindrical surfaces [69]. the unit cell of the absorber structure is based on jcr resonator which is printed on a flexible polymer polyethylene-terephthalate (pet) using silver nanoparticle ink. the structure shows 95% absorption at 9.21 ghz for flat, as well as a cylindrical surface having a diameter of 9.12 cm on a 0.62 mm thick substrate for all polarizations less than 30° of obliquely incident angles. few other flexible metamaterial absorbers were realized by many groups, such as a polarization incident 1.19 mm thick absorber designed on a flexible paper substrate based on inkjet printing technique substrate by yoo et al. [70]. the inkjet-printed metamaterial absorber is fabricated on a paper substrate by applying silver nanoparticle ink using an inkjet printer. it offers 95% absorption at 9.09 ghz for all polarizations up to 30° of oblique incident angles. then, huang et al. observed a 90% absorption at both x & ku bands when conductive graphene nano-flake ink is used to print an fss on top of a flexible silicon dielectric material through stencil printing method [71]. the 2 mm thick structure enables conformable bending and provides a fractional bandwidth of 62% with an exceptional reduction in rcs. using screen printing technique, another noted flexible metamaterial absorber for wearable device was designed on an ordinary textile using conductive silver [72]. the top of the unit cell of the structure was designed in the form of a channel logo and was backed by copper tape. the 1.2 mm thick absorber was simple to design and it presented the opportunity of integrating metamaterial absorber with wearable technology. the absorber showed good absorption at 10.8 ghz when the wave is normally incident. an interesting wideband textile based metamaterial absorber using the same technique was presented by singh et al. as a wearable microwave absorber offering more than 90% absorption from 7.39 to 18 ghz. the top layer is the printed cloth of various kind (fr4, plain weave cotton cloth and twill weave cotton cloth), which is separated by a flexible a review on the pursuit of an optimal microwave absorber 641 dielectric foam from the ground plane in the 3 layered structure. the fabricated absorber was treated with polydimethylsiloxane (pdms) to make it hydrophobic [73]. an x-band light weight metamaterial absorber using agnw resistive film was described by lee et al [74]. the structure which is 7.5 mm, consisted of cross-shaped resistive agnw film on top of a styrofoam dielectric material backed by a conductor shows 90% absorption bandwidth from 6 to 14 ghz for all polarizations. a graphite-based metamaterial absorber was designed instead of copper. as graphite has a low electric conductivity, high corrosion resistance, low density and high skin depth used to construct the surface pattern. a graphite square ring is placed on a layer of fr4 with an aluminium back offering an absorption bandwidth from 11.36 to 18 ghz [75]. switchable metamaterial absorbers based on split ring resonator (srr) were fabricated by 3d printing technology realizing single-band and dual-band switching, and three bands (4.5 ghz, 6 ghz and 8.8 ghz) simultaneous absorption for controllable absorption and selective filtering by rotating its units. for a single srr unit, the main body of which is composed of polylactic acid (pla) and the interior of the unit is hollow and filled with liquid metal to observe the regulation of absorption at the incident angle of 240° [76]. an ultra-broadband, light weight, magnetic metamaterial absorber consisting of periodically-arranged subwavelength-scaled stepped structure was designed and presented offering absorption from 1.23 to 19 ghz up to an incident angle of about 45°. each unitcell structure is made up of a mixture of carbonyl iron powder and resin and composed of four stacked cuboids of equal length and width. the magnetic loss of the magnetic material, the multi-resonances and the edge diffraction effects at different frequencies of the stepped structures contribute to a broad absorption band [77]. until recently, there have been a number of investigations on microwave absorbers comprising of varying absorption levels, bandwidth and polarization independency over a wide-ranging angle of incidence with various thicknesses and few other parameters in different frequency ranges [78-88]. a comparison between the absorption, bandwidth, thickness, etc., of the few recently reported wideband microwave absorbers is listed in table 1. table 1 sl. no. type of absorber maximum reflection loss (db) frequency range (ghz) -10 db bandwidth (ghz) thickness (mm) year ref 1 dielectric -53.9 2-18 4.56 3.5 2019 [25] 2 dielectric -62.25 8-18 6.64 2.7 2019 [26] 3 dielectric -32.0 8-12 4 5.0 2020 [31] 4 magneto dielectric -35.0 8-12 3.2 2.7 2018 [34] 5 dielectric -43.0 2-18 5.08 1.6 2019 [35] 6 metamaterial --6-12 multiple bandwidth 1.2 2013 [45] 7 metamaterial -10 4-12 multiple bandwidth 3.1 2016 [53] 8 metamaterial -19.1 3.56 8.16 ~5 1.2035 2016 [65] 9 dielectric -21 6.4-15 ~8.5 1.0 2020 [89] 10 magneto dielectric/ hybrid -20 8-12 ~6 1.0 2019 [90] 11 metamaterial -16.42 4-8.12 ~4.12 5.0 2015 [63] 12 metamaterial -20 4-10 multiple bandwidth 1.035 2014 [91] 642 s. chakraborty, s. chakraborty 5. conclusion in order to design a microwave absorber, many challenging aspects, such as good absorption over a wide bandwidth, polarization sensitiveness for wide incidence angle, low thickness, conformability, etc. are to be considered. some of these aspects with all the historical achievements on various conventional and metamaterial absorbers are discussed here. different sets of materials, such as conductive and non-conductive polymers, magnetic and non-magnetic nano materials, along with techniques to maximize absorption bandwidth are considered here. symmetrical structures using srrs, fss, varactor diodes, pin diodes, lumped elements, fractal structures, multilayering, etc. are some research areas which are used recently to address polarization sensitiveness and incidence angles cases. use of substrates which are magnetic, thermoplastic, water –based are also presented, as they not only maximize absorption efficiency but few are also easily moldable into thin sheets and mountable on any surface. in addition to the benefits and limitations, several critical aspects experienced in designing a near-perfect microwave absorber are analyzed in order to have an overview of the current scenario. there are numerous possible applications of microwave absorbers in various civilian and defense sectors. pursuit of ultra-thin, compact microwave absorber with broadband behavior and justification of the need for perfectly thin economical absorber with enhanced features for more practical airborne applications is of great interest and still quite challenging. references [1] x. c. tong, advance materials and design for electromagnetic interference shielding. london: taylor and francis, 2009. [2] v. g. veselago, "the electrodynamics of substances with simultaneously negative values of ɛ and μ", soviet physics: uspekhi, vol.10, pp. 509-514, 1968. [3] w. h. emerson, "electromagnetic wave absorbers and anechoic chambers through the years", ieee trans. antennas propag., vol. 21, no. 4, pp. 484-490, july 1973. [4] o. halpern, "method and means for minimizing reflection of high-frequency radio waves", us patent 2923934, 1960. [5] o. halpern, m. h. j. johnson and r. w. wright, "isotropic absorbing layers", us patent 2951247, 1960. [6] j. l. snoek, "dispersion and absorption in magnetic ferrites at frequencies above one mc/s", physica, vol. 14, pp. 207-217, may 1948. [7] w. w. salisbury, "absorbent body for electromagnetic waves", us patent 2599944, 1952. [8] j. w. tiley, "radio wave absorption device", us patent 2464006, 1949. [9] h. a. tanner, "fibrous microwave absorber", us patent 2977591, 1961. [10] e. b. mcmillan, "microwave radiation absorbers", us patent 2822539, 1958. [11] o. halpern, m. h. j. johnson and r. w. wright, "isotropic absorbing layers", us patent 2951247, 1960. [12] w. dallenbach and w. kleinsteuber, "reflection and absorption of decimeter-waves by plane dielectric layers", hochfreq. u elektroak, vol. 51, 152-156, 1938. [13] l. wesch, "resonance absorber for electromagnetic waves", us patent 3526896, 1970. [14] k. suetake, "super wide band wave absorber", us patent 3623099, 1971. [15] p. saville, review of radar absorbing materials. technical memorandum drdc atlantic tm 2005-003, 2005. [16] m. e. nahmias, "method and means for reducing reflections of electromagnetic waves", us patent 4030098, 1977. [17] a. feldblum, et al., "microwave properties of low-density polyacetylene", j. polym. sci.: polym. phys. ed., vol. 19, no. 1, pp. 173-179, jan. 1981. [18] k. j. vinoy and r. m. jha, "trends in radar absorbing materials technology", sadhana, vol. 20, pp. 815850, oct. 1995. [19] d. l. jaggard, n. engheta and j. c. liu "chiroshield: a salisbury/dallenbach shield alternative", electron. letters, vol. 26, pp. 1332-1334, aug. 1991. a review on the pursuit of an optimal microwave absorber 643 [20] m. f. lin and d. s. chuu, "low-frequency plasmons in metallic carbon nanotubes", phys. rev. b, vol. 56, pp. 1430-1439, july 1997. [21] r. ramasubramaniam, et al., "homogeneous carbon nanotube /polymer composites for electrical applications", appl. phys. lett., vol. 83, pp. 2928-2930, sept. 2003. [22] c. wang, et al., "overview of carbon nanostructures and nanocomposites for electromagnetic wave shielding", carbon, vol. 140, pp. 696-733, dec. 2018. [23] t. chen, et al., "hexagonal and cubic ni nanocrystals grown on graphene: phase-controlled synthesis, characterization and their enhanced microwave absorption properties", j. mater. chem., vol. 22, pp. 15190, aug. 2012. [24] d. chuai, et al., "enhanced microwave absorption properties of flake-shaped fepcb metallic glass/graphene composites", compos. part a: appl. sci. manuf., vol. 89, pp. 33-39, oct. 2016. [25] p. b. liu, et al., "synthesis of lightweight n-doped graphene foams with open reticular structure for highefficiency electromagnetic wave absorption", chem. eng. j., vol. 368, pp. 285–298, july 2019. [26] s. r. lu et al., "permittivity-regulating strategy enabling superior electromagnetic wave absorption of lithium aluminum silicate/rgo nanocomposites", acs appl. mater. interfaces, vol. 11, pp. 18626–18636, april 2019. [27] x. y. lv, et al., "investigation on the enhanced electromagnetism of ni/rgo nanocomposites synthesized by an in situ process", mater. lett., vol. 201, pp. 43–45, aug. 2017. [28] y. p. shi, et al., "achieving excellent metallic magnet-based absorbents by regulating the eddy current effect", j. appl. phys., vol. 126, pp. 105109, sept. 2019. [29] y. h. li, et al., "vertical interphase enabled tunable microwave dielectric response in carbon nanocomposites", carbon, vol. 153, pp. 447–57, nov. 2019. [30] x. y. li, and k. lu, "improving sustainability with simpler alloys", science, vol. 364, no. 6442, pp. 733– 734, may 2019. [31] a. r. pai, et al., "ultra-fast heat dissipating aerogels derived from polyaniline anchored cellulose nanofibers as sustainable microwave absorbers", carbohydr. polym., vol. 246, pp.116663, oct. 2020. [32] j-s. roh, et al., "electromagnetic shielding effectiveness of multifunctional metal composite fabrics". text. res. j., vol. 78, pp. 825–835, sept. 2008. [33] k. fu, et al., "conductive textiles", in engineering of high-performance textiles, m. miao, j. h. xin, eds. woodhead publishing, 2018, pp. 305–334. [34] d. estevez, et al., "complementary design of nano-carbon/magnetic microwire hybrid fibers for tunable microwave absorption", carbon, vol. 132, pp. 486–494, june 2018. [35] y. cheng, et al., "lightweight and flexible cotton aerogel composites for electromagnetic absorption and shielding applications", adv. electron. mater., vol. 6, pp. 1900796, nov. 2019. [36] f. bilotti, et al., "an srr-based microwave absorber", microw. opt. technol. lett., vol. 48, pp. 21712175, aug. 2006. [37] n. i. landy, et al., "perfect metamaterial absorber", phys. rev. lett., vol. 100, pp. 207402, may 2008. [38] s. gu, et al., "a broadband low-reflection metamaterial absorber", j. appl. phys., vol. 108, pp. 064913, sept. 2010. [39] m. li, et al., "perfect metamaterial absorber with dual bands", prog. electromagn. res., vol. 108, pp. 37– 49, sept. 2010. [40] s. bhattacharyya, et al., "triple band polarization-independent metamaterial absorber with bandwidth enhancement at x-band", j. appl. phys., vol. 114, pp. 094514, sept. 2013. [41] b. bian, et al., "novel triple-band polarization-insensitive wide-angle ultra-thin microwave metamaterial absorber", j. appl. phys., vol. 114, 194511, nov. 2013. [42] o. b. ayop, et al., "triple band circular ring-shaped metamaterial absorber for x-band applications", prog. electromagn. res. m, vol. 39, pp. 65–75, oct. 2014. [43] c. gong, et al., "broadband terahertz metamaterial absorber based on sectional asymmetric structures", sci rep., vol. 6, p. 32466, aug. 2016. [44] h. m. lee and h. s. lee "a method for extending the bandwidth of metamaterial absorber". int. j. antennas propag., vol. 2012, pp. 1-7, nov. 2012. [45] t. m. kollatou, et al., "a family of ultra-thin, polarization-insensitive, multi-band, highly absorbing metamaterial structures", prog. electromagn. res., vol. 136, pp. 579–594, jan. 2013. [46] j. w. park, et al., "multi-band metamaterial absorber based on the arrangement of donut-type resonators", opt. express, vol. 21, no. 8, pp. 9691–9702, april 2013. [47] s. gu, et al., "planar isotropic broadband metamaterial absorber", j. appl. phys., vol. 114, pp. 163702, oct. 2013. [48] f. c. seman and r. cahill, "performance enhancement of salisbury screen absorber using resistively loaded spiral fss", microw. opt. technol. lett., vol. 53, pp. 1538–1541, april 2011. https://www.sciencedirect.com/science/journal/1359835x https://www.sciencedirect.com/science/journal/1359835x/89/supp/c https://www.sciencedirect.com/science/journal/01448617 https://www.sciencedirect.com/science/journal/01448617/246/supp/c https://www.sciencedirect.com/science/article/abs/pii/s0008622318302136#! https://www.sciencedirect.com/science/journal/00086223 https://www.sciencedirect.com/science/journal/00086223/132/supp/c 644 s. chakraborty, s. chakraborty [49] j. zhao, et al., "a tunable metamaterial absorber using varactor diodes", new j. phys., vol. 15, p. 043049, april 2013. [50] s. li, et al., "wideband, thin, and polarization-insensitive perfect absorber based the double octagonal rings metamaterials and lumped resistances", j. appl. phys., vol. 116, p. 043710, july 2014. [51] w. li, et al., "integrating non-planar metamaterials with magnetic absorbing materials to yield ultrabroadband microwave hybrid absorbers", appl. phys. lett., vol. 104, p. 022903, jan. 2014. [52] x. yin, et al., "ultra-wideband microwave absorber by connecting multiple absorption bands of two different-sized hyperbolic metamaterial waveguide arrays", sci rep., vol. 5, p. 15367, oct. 2015. [53] h. sun, et al., "broadband and broad-angle polarization-independent metasurface for radar cross section reduction", sci rep., vol. 7, p. 40782, jan. 2017. [54] h. k. kim, et al., "wideband-switchable metamaterial absorber using injected liquid metal", sci rep., vol. 6, p. 31823, aug. 2016. [55] w. ellison, "permittivity of pure water, at standard atmospheric pressure, over the frequency range 0–25 thz and the temperature range 0–100°c", j. phys. chem. ref. data, vol. 36, 1–18, feb. 2007. [56] a. andryieuski, et al., "water: promising opportunities for tunable all dielectric electromagnetic metamaterials", sci rep., vol. 5, p. 13535, aug. 2015. [57] m. odit, et al., "experimental demonstration of water based tunable metasurface", appl. phys. lett., vol. 109, p. 011901, july 2016. [58] y. j. yoo, et al., "metamaterial absorber for electromagnetic waves in periodic water droplets", sci rep., vol. 5, p. 14018, sept. 2015. [59] y. pang, et al., "thermally tunable water-substrate broadband metamaterial absorbers", appl. phys. lett., vol. 110, p. 104103, march 2017. [60] y. shen, "thermally tunable ultra-wideband metamaterial absorbers based on three-dimensional water-substrate construction", sci rep., vol. 8, p. 4423, march 2018. [61] w. zhuang, et al., "design and optimization of a flexible water-based microwave absorbing metamaterial", appl. phys. express, vol. 12, may 2019. [62] j. zhang, et al., "ultra-broadband microwave metamaterial absorber with tetramethylurea inclusion", opt. express, vol. 27, no. 18, pp. 2559525602, sept. 2019. [63] p. munaga, et al., "a fractal-based compact broadband polarization insensitive metamaterial absorber using lumped resistors", microw. opt. technol. lett., vol. 58, no. 2, pp. 343–347, feb. 2016. [64] n. thi quynh hoa, et al., "wide-angle and polarization-independent broadband microwave metamaterial absorber", microw. opt. technol. lett., vol. 59, no. 5, pp. 1157–1161, march 2017. [65] f. yang, et al., "ultrabroadband metamaterial absorbers based on ionic liquids", appl. phys. a, vol. 125, p. 149, feb. 2019. [66] s. ghosh and k. v. srivastava, "polarization-insensitive single-and broadband switchable absorber/reflector and its realization using a novel biasing technique", ieee trans. antennas propag., vol. 64, no. 8, pp. 3665–3670, may 2016. [67] o. ayop, et al. "dual band polarization insensitive and wide angle circular ring metamaterial absorber", in proceedings of the conf. antennas and propagation (eucap), hague, 2014, pp. 955–957. [68] o. ayop, et al., "dual-band metamaterial perfect absorber with nearly polarization-independent", appl. phys. a, vol. 123, p. 63, 2017. [69] h. k. kim, et al., "flexible inkjet-printed metamaterial absorber for coating a cylindrical object", opt. express, vol. 23, no. 5, pp. 5898–5906, march 2015. [70] m. yoo, et al., "silver nanoparticle-based inkjet-printed metamaterial absorber on flexible paper", ieee antennas wirel. propag. lett., vol. 14, pp. 1718–1721, april 2015. [71] x. huang et al., "experimental demonstration of printed graphene nano-flakes enabled flexible and conformable wideband radar absorbers", sci rep., vol. 6, p. 38197, dec. 2016. [72] d. lee et al., "textile metamaterial absorber using screen printed channel logo", microw. opt. technol. lett., vol. 59, no. 6, pp. 1424–1427, june 2017. [73] g. singh, et al., "fabrication of a non-wettable wearable textile-based metamaterial microwave absorber", j. phys. d: appl. phys., vol. 52, p. 385304, july 2019. [74] j. lee and b. lee, "wideband absorber using silver nanowire resistive film", electron. letters, vol. 52, pp. 631–633, april 2016. [75] x. chen, et al., "a graphite-based metamaterial microwave absorber", ieee antennas wirel. propag. lett., vol. 18, pp. 1016–1020, march 2019. [76] c. kejian, et al., "switchable 3d printed microwave metamaterial absorbers by mechanical rotation control", j. phys. d: appl. phys., vol. 53, p. 305105, may 2020. [77] j. ning et al., "ultra-broadband microwave absorption by ultra-thin metamaterial with stepped structure induced multi-resonances", results phys., vol. 18, p. 103320, sept. 2020. https://iopscience.iop.org/journal/1882-0786 https://iopscience.iop.org/volume/1882-0786/12 a review on the pursuit of an optimal microwave absorber 645 [78] f. s. santos and v. f. rodriguez-esquerre, "water-based broadband metamaterial absorbers operating at microwave frequencies", metamaterials, metadevices, and metasystems, vol. 2020, p. 114602g, aug. 2020. [79] d. sood, "ultrathin compact triple-band polarization-insensitive metamaterial microwave absorber", in mobile radio communications and 5g networks, lecture notes in networks and systems, n. marriwala, c.c. tripathi, d. kumar, s. jain, eds. vol. 140, 2021. [80] m. zhen, et al., "multi-spectral functional metasurface simultaneously with visible transparency, low infrared emissivity and wideband microwave absorption", infrared phys. technol., vol. 110, p. 103469, nov. 2020. [81] x. zhang, et al., "3-d printed swastika-shaped ultrabroadband water-based microwave absorber", ieee antennas wirel. propag. lett., vol. 19, no. 5, pp. 821–825, march 2020. [82] s. dongyong, et al., "comptibility of optical transparency and microwave absorption in c-band for the metamaterial with second-order cross fractal structure", physica e, vol. 116, p. 113756, feb. 2020. [83] h. wu, et al., "design and analysis of a five-band polarization-insensitive metamaterial absorber", int. j. antennas propag., vol. 2020, pp. 1–12, dec. 2020. [84] w. zhendong, et al., "broadband microwave absorber with a double-split ring structure", plasmonics, vol. 15, pp. 1863–1867, dec. 2020. [85] t. m. cuong, et al., "broadband microwave coding metamaterial absorbers", sci rep., vol. 10, p. 1810, feb. 2020. [86] a. e. assal, et al., "toward an ultra-wideband hybrid metamaterial based microwave absorber", micromachines, vol. 11, no. 10, p. 930, oct. 2020. [87] s. a. naqvi and m. a. baqir, "ultra-wideband symmetric g-shape metamaterial-based microwave absorber", j. electromagn. waves appl., vol. 32, no. 16, pp. 2078-2085, july 2018. [88] k. chaudhary, et al., "optically transparent protective coating for ito-coated pet-based microwave metamaterial absorbers", ieee trans. compon. packaging manuf. technol., vol. 10, no. 3, pp. 378-388, march 2020. [89] r. bhattacharyya, et al., "defect reconstruction in graphene for excellent broadband absorption properties with enhanced bandwidth", appl. surf. sci., vol. 537, p. 147840, jan. 2021. [90] r. bhattacharyya, et al., "graphene oxide-ferrite hybrid framework as enhanced broadband absorption in gigahertz frequencies", sci. rep., vol. 9, p. 12111, aug. 2019. [91] s. bhattacharyya and k. v. srivastava, "triple band polarization-independent ultra-thin metamaterial absorber using elc resonator", j. appl. phys., vol. 115, p. 064508, feb. 2014. facta universitatis series: electronics and energetics vol. 32, no 2, june 2019, pp. 179-193 https://doi.org/10.2298/fuee1902179p enhanced dielectric properties in la modified barium titanate ceramics  vesna paunović 1 , zoran prijić 1 , miloš đorđević 1 , vojislav mitić 1,2 1 university of niš, faculty of electronic engineering, niš, serbia, 2 institute of technical sciences of sasa, belgrade, serbia abstract. donor/acceptor (la/mn) doped batio3 ceramics, sintered at different temperatures, were studied regarding their microstructure and dielectric properties as well as the dielectric response in a ferroelectric/paraelectric regime. the concentrations of la3+ as donor, ranging from 0.1 to 5.0 at% were used for doping, while a content of mn4+ as acceptor was at 0.05 at% in all samples. the sintering temperature of codoped samples were 1290 and 1350c. a reduction in grain size and fine-grained microstructure with average grain size from 0.5 to 2.0 m was observed in low doped samples, whereas the abnormal growth of individual grains took place in the 2 at% and 5 at% la doped specimens. the dielectric properties of these samples were investigated as a function of frequency (100hz – 20 khz) and temperature (20-180c). the measured results suggested that both the dielectric constants of the ceramics (r at room temperature and rmax at the curie temperature) decreased as the concentration of la3+ increased. the dielectric permittivity was in the range of 944 to 3200. for samples doped with 0.1 at% la and sintered at 1350°c, the highest dielectric constant value at room temperature (r= 3200) and curie temperature (r= 5000) were measured. for all measured samples the dissipation factor was less than 0.09. with an increase in la contents, dielectric measurements exhibited shift in the curie temperature (tc) towards the low temperature. using the curie-weiss and the modified curie-weiss law, curie's constant c was calculated as well as the parameter, which describes the deviation from the linear dependence r of t above the phase transformation temperature. the calculated values for  ranged from 1.01 to 1.43. these values indicate a sharp phase transformation in lowdoped and diffuse phase transformation in highly la doped samples. the phase transition was reflected in the values of c that started to decrease with increasing dopant content. key words: batio3, dielectric constant, dissipation factor, curie temperature received april 8, 2019 corresponding author: vesna paunović university of nis, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: vesna.paunovic@elfak.ni.ac.rs)  180 v. paunović, z. prijić, m. đorđević, v. mitić 1. introduction due to its high dielectric constant and low dielectric losses barium titanate is an invaluable electroceramic materials that have been widely used in multilayer ceramic capacitors (mlccs), temperature sensors, rf filter circuit, electro-optical components and piezoelectric transducer applications 1-3. in order to be used for mlc applications, barium titanate must be electrical insulators and exhibit high dielectric constant and small dielectric losses at room temperature. as over-current protection devices, temperature sensors and self-regulating heaters they need to be semiconducting, at room temperature and make full use of the ptcr characteristics which are associated with a sharp rise in resistivity when heated above the curie temperature 4-6. batio3 is an insulator and a ferroelectric with a tetragonal perovskite structure and a high dielectric constant at room temperature. at the ferroelectric curie temperature, the crystal structure transforms from tetragonalferroelectric to cubic–paraelectric structure. dielectric properties of batio3-ceramics can be controlled through processing parameters, synthesis method and sintering procedure. accordingly, it is necessary to prepare homogeneous starting powder, and a ceramics of high density, uniform and fine grain microstructure. a suitable choice of dopant/additive and careful control of the composition during sintering procedure are one of the most important parameters for modifying the electrical properties of batio3 ceramics 7-12. ions with low valence and larger ionic radius (la 3+ , ca 2 ) tend to take ba 2+ sites, while ions with smaller ionic radii of valence 5 + and higher (nb 5+ ) favor the ti 4+ sites 13-18]. incorporation of heterovalent ions in perovskite lattice of barium titanate leads to significant changes of structure and microstructure and furthermore to change of dielectric and electrical properties. the dielectric characteristics of doped ceramics, in addition to the type and concentration of the additive, are greatly influenced by other parameters such as microstructure, phase homogeneity, pore morphology and domain structure. during the phase transformation of batio3, the domain structure is formed. the configuration and type of domains depends on the development of the microstructure during the sintering process. homogenous, finegrained microstructure with monodomain structure allows the obtaining of ceramics of stable ferroelectric characteristics, i.e. ceramics in which the dielectric constant changes slightly with temperature. during the last few decades, batio3 ceramics, doped with rare earth elements, and especially la, have widely been studied. as a dopant, la is one of the most commonly used materials [19–22]. la 3+ behaves as a donor as it occupies the ba site in perovskite lattice. this may raise the dielectric constant and further broaden dielectric peak [23-25]. also, la as donor decreases the grain size and shifted curie temperature towards lower values. in la doped samples, the dielectric constant values are much higher than in pure batio3. the partial substitution of ba 2 + ions with la 3+ ions increases the temperature range in which a stable tetragonal phase, characterized by a small change in dielectric constant with temperature. also, it was found that dielectric losses are reduced by adding la to batio3 2628 at low concentrations of la (less than 0.5 at %) occurs to the substitution of ba 2+ ions and to the formation of solid solutions of the general formula ba(1x)laxtio3. at higher enhanced dielectric properties in la modified barium titanate ceramics 181 concentrations of additives above 1.0 at %, ba 2+ or ti 4+ ions may be substituted, where the specific electrical resistance of the sample is very high in the order of 10 10 cm. the substitution of la 3+ on the ba 2+ sites requires the formation of negatively charged defects in order to preserve electroneutrality. the charge imbalance can be compensated by three different compensation mechanisms: electrons (e / ) what constitutes electronic compensation mechanism or barium vacancies (vba // ) and titanium vacancies (vti //// ) which represent ionic compensation mechanism 29-32. for samples sintered in the air atmosphere, the main compensation mechanism is the ionic compensation mechanism, although there is disagreement as to whether this the mechanism takes place through the creation of barium (vba // ) or titanium (vti //// ) vacancies. for low partial pressure at low doping levels, the compensation of donors is accomplished by electrons, while for high pressures, the characteristic mechanism is an ionic compensation mechanism. the influence of mno2 on the electrical properties of doped batio3 has been widely investigated [33-35]. in an attempt to increase the reliability of the material, mn as an acceptor dopant is used to counteract the effects of oxygen vacancies. for ptc thermistor, mn is among the most effective acceptor type dopant, which segregates along the grain boundaries to enhance the resistance jump at the curie temperature. manganese replaces ti 4+ ion in batio3 lattice as an acceptor with unstable valence, from mn 2+ , mn 3+ to mn 4+ , depending on the partial pressure of oxygen. in a reducing atmosphere mn 2+ is likely to be found but in oxidizing conditions it converts into mn 4+ . in air processed samples found both mn 2+ and mn 4+ with no traces of mn 3+ . the formation of donor acceptor complexes such as 2[laba  ]-[mnti  ] prevents a valence change of mn 2+ to mn 3+ and has a beneficial effect on reduction of the dissipation factor. controlled embedding of donor substances, la 3+ , in combination with the mn 2+ acceptor, enables the creation ceramics with a fine grain structure and an increased dielectric constant r, at room temperature and phase transformation temperature compared to la/batio3 ceramics [36-38]. also, the dielectric losses are lower in the la/mn codoped ceramics compared to the undoped and la doped ceramics. in this paper the influence of sintering temperature, donor concentration, acceptor mn, and their relationship on the performance of ceramics were discussed. also, the permittivity response with temperature and frequency for specimens doped with various content of la and sintered at different temperatures were analyzed. 2. experiments and methods the samples of la/mn doped ceramics used in this investigation were obtained from commercial batio3 powder, elmic bt 100 rhone poulenc: with a particle size of 0.1m -0.7 m. the stoichiometric bao/tio2 ratio was 0.996 ±0.004. la2o3 (merck, darmstadt) was used as donor dopant. the donor concentration was 0.1 at%-5.0 at%. mno2 with a concentration of 0.05 at%, was used as acceptor in all cases. the powders were milled with al2o3 balls in a suspension of ethyl alcohol. the homogenization and milling time was 24h. the powders were then dried at 200c for several hours and isostatically pressed at 120mpa into cylindrical shaped tablets of 10 mm diameter (hydraulic press vpm veb thuringer industrieverg raunestein). the prepared tablets 182 v. paunović, z. prijić, m. đorđević, v. mitić were subjected to the sintering in a laboratory tube furnace (lenton thermal design ltd) at 1290°c and 1350°c in an alumina ceramic boats. the sintering was conducted in air for 2h. the heating mode was 5°c/min to a temperature of 850°c and then of 12°c/min to the desired (sintering) temperature. the cooling rate was 10°c/min to room temperature. the archimedes’ method was used to measure bulk density. a scanning electron microscopy (jsm -5300) equipped with eds was used to investigate the microstructures of the samples obtained after sintering. the samples were covered with an au electrodes to improve the conductivity during measurement. the capacitances and the loss tangent of the sintered samples were measured with lcr meter (agilent 4284a) in the frequency range between 100hz and 20 khz. the relative dielectric constant was calculated from the measured capacitance. the temperature interval in which the dielectric constant was measured, is from 20 to 180°c. curie temperature (tc), curieweiss temperature (t0), curie constant (c) together with critical exponent of nonlinearity ( ) were calculated using modified curie-weiss law. 3. microst ructure characteristics la/mn -batio3 ceramic density ranged from 72-91% of theoretical density (td), depending on the sintering temperature and additive concentration. with an increase of the sintering temperature and a decrease of the lanthanum concentration, the density increases while porosity decreases. the smallest density (from 72% td for 5.0 la/bt to 75% td for 0.1 la/bt) was measured in samples sintered at 1290c. the highest density value, 91%td, has 0.1la/bt sample sintered at 1350c. the lower densities characteristic for samples doped with higher concentration of la can be due to the formation of a secondary la rich phase, la2ti2o7 phase, which prevents diffusion during the initial sintering phase. (a) (b) fig. 1 sem images of la/mn doped batio3, sintered at 1290c a) 0.1at% la and b) 0.5 at% la. fig. 1 shows surface sem images and grain size distributions of ceramics with 0.1 and 0.5 at% la sintered at 1290c. it has been found that all low la doped samples have a dense microstructure and uniform grain size. the average grain size of la-doped batio3 ceramics enhanced dielectric properties in la modified barium titanate ceramics 183 was from 1.0 to 2.0 m for la concentrations of 0.1 at%, and 0.5at%. at a sintering temperature of 1350c, the microstructure of 0.1 and 0.5 at% la doped samples is very similar to the microstructure of the samples sintered at lower sintering temperatures (fig. 2). the grain size for these samples ranged from 0.5 to 1.5 μm and was characterized by slightly higher density. (a) (b) fig. 2 sem images of la/mn doped batio3, sintered at 1350c a) 0.1at% la and b) 0.5 at% la. however, when the la content increased further to 1.0 at%, a slight increase in average grain size was observed. for samples doped with 1.0 at%, 2.0 at% and 5.0 at% la and sintered at 1350c the microstructure is quite different from the samples sintered at lower temperatures and doped with low additive content. this was related to the formation of individual large grains from 3 to 10 μm as shown in fig. 3. (a) (b) fig. 3 sem micrographs of 2.0la/mn-doped batio3, sintered at 1350c, a) fine-grained microstructure, b) abnormal growth of individual grains. sem images were taken from the same sample. in relation to temperature, the sintering process of la doped batio3 systems can be considered into two different regions, below the eutectic temperature and above the 184 v. paunović, z. prijić, m. đorđević, v. mitić eutectic temperature. at 1350c, liquid phase sintering, with a non-homogeneous distribution of the liquid phase, contributes to the abnormal grain growth within the finegrained structure. one of the specificities of microstructural characteristics, noticed in samples sintered above the eutectic point, is the appearance of the domain structure in individual abnormal grains (fig 3b). the pronounced differences in the microstructure are due to the non-homogeneous distribution of la, which can be confirmed by eds spectra made from different locations on the same sample (fig. 4). (a) (b) fig. 4 sem/eds images of 2.0 la/mn doped batio3.a) fine-grained structure rich in la, b) individual large grains with a domain structure. the presence of la-rich regions indicates two possibilities: first, form a new phase, la2ti2o7, during the sintering, and the other, la has not been incorporated into the batio3 lattice. xrd analysis shows that the second phase, apart from the batio3 perovskite phase, was not found, which leads to the conclusion that the free la is present in the sample (fig. 5).the la rich region are associated to the fine-grained microstructure. the eds spectrum has shown that abnormal grains with a domain structure don’t contain la (fig. 4b). also, the eds analysis showed a homogeneous distribution of mn through the samples, since areas with an increased mn content were not detected. fig. 5 xrd pattern of the 2.0 at% la-batio3 ceramics. no evidence of any secondary phase. enhanced dielectric properties in la modified barium titanate ceramics 185 3. dielectrical characteristics the electrical resistivity measurements indicated that all la doped samples behave as electrical insulators and have an electrical resistivity greater than 10 8 cm at room temperature dielectric properties, which depend on the microstructural characteristics, type and concentration of additives, were measured as a function of frequency and temperature. the frequency range was from 100hz to 20 khz and the temperature range from 20°c to 180°c. according to the obtained measurement results, as can be seen in fig.6, the dielectric constant generally decrease with increasing frequency. at high frequencies, dipoles in ceramic materials are incapable of following rapid electric field changes, resulting in limited dipole response which consequently leads to lower dielectric constant. in all la doped samples, after the initial higher value at lower frequencies r decreases its value becomes almost constant for frequencies greater than 3 khz. (a) (b) fig. 6 frequency dependence of dielectric constant for la/mn-batio3 ceramics sintered at a) 1290c and b) 1350c. 186 v. paunović, z. prijić, m. đorđević, v. mitić with an increase of sintering temperature, the porosity of the samples decreases and their density increases, thus increasing the value of the dielectric constant. so the highest values of r have samples sintered at 1350°c. with an increase of additive concentration, the dielectric constant value decreases, so that the maximum value of r was measured for 0.1la/mn-batio3 samples sintered at 1350°c. the value of the dielectric constant at 100hz and room temperature ranged from 944 for 5.0la/mn-batio3 to 1970 for 0.1la/mn-batio3 ceramics sintered at 1290°c, and from 1450 for 5.0la/mn-batio3 to 3200 for 0.1la/mn-batio3 samples sintered at 1350°c. for all la/mn-batio3 doped samples are characteristic the low values of the dielectric losses. the highest values of tan at 100hz, as well as the largest changes with frequency, from 0.09 to 0.01, were measured for 2.0 and 5.0 at % la doped samples sintered at both sintering temperatures. the main characteristic of the loss tangent for all samples are that after high values at low frequencies, tanδ decreases and becomes constant for frequencies above 3 khz, as shown in fig.7. (a) (b) fig. 7 frequency dependence of dielectric losses for la/mn-batio3 ceramics sintered at a) 1290c and b) 1350c. enhanced dielectric properties in la modified barium titanate ceramics 187 the changes of dielectric constant with temperature clearly displays its dependence on the additives concentration and microstructural characteristics. among the investigated samples, the highest dielectric constant value at room temperature (εr = 3200) and at the curie temperature (εr = 5000), as well as the largest change in the dielectric constant with temperature, shows 0.1la/mn-batio3 sample sintered at 1350c characterized by fine grain and uniform microstructure (fig. 8). for other additive concentrations, the dielectric constant values at curie's temperature are considerably lower. with an increase of sintering temperature, the values of εr are also increased. (a) (b) fig. 8 temperature dependence of r for la/mn-batio3 ceramics. a) tsin=1290c and b) tsin = 1350c. for all the investigated temperatures, it is also characteristic that dielectric constant, decreases with increasing additive concentration. the lowest εr value was measured from sample doped with 5.0 at% la and sintered to 1290c. lower dielectric constant values in high doped la/ mn ceramics can be due to lower ceramic density in samples with higher 188 v. paunović, z. prijić, m. đorđević, v. mitić content of additives or the presence of la-rich regions and the formation of individual large grains which obviously cause a decrease in dielectric permittivity. in general, the sharp phase transformation from the ferroelectric to the paraelectric phase at curie temperature was observed in the lower doped (0.1 and 0.5 at% la) batio3 samples. for samples doped with higher la concentration, the nearly flat and stable permittivity response of dielectric constant in the temperature range of 20° to 180°c were observed. from fig. 8 it can be seen that the curie temperature (tc) was shifted to a higher temperature with the increase of la content. it is because la 3+ entered ba site and tc increased with the incorporation of la 3+ . the curie temperature was in the range of 125°c for samples doped with 0.1at% la to 129c for samples doped with 5.0 at% la (table 1). fig. 9 reciprocal value of dielectric constant versus temperature for selected labatio3 samples. all investigated samples follow the curie-weiss law, r=c/(t-t0). based on the curieweiss law, by fitting curves 1/r vs. t, the curie-weiss temperature (t0) and the curie constant (c) are calculated, for all concentrations and sintering temperatures. the curves, dependence of the inverse value of the dielectric constant on the temperature for la/mn-batio3 doped ceramics (fig. 9), show a linear dependence 1/r vs.t, in the ferroelectric region. using the linear extrapolation 1/r vs.t is calculated the curie-weiss temperature t0. the curie constant was determined by fitting the plot of the reciprocal values of the permittivity in relation to the temperature, and represents the slope of this curve for value above the tc. curie's constant value depends largely on the grain size, additive concentration and the porosity of the doped specimens. since the increase in the additive concentration decreases the density of the samples and increases the grain size, it can be expected that the highest value of enhanced dielectric properties in la modified barium titanate ceramics 189 the curie constant was measured for samples doped with 0.1at% la and sintered at 13500c (c=8.39510 5 k). as the sintering temperature increases, the curie constant for all sample increases (fig.10). it has also been observed that the change in the curie constant with the additive concentration is more pronounced for samples sintered at higher temperatures, where a sharp drop of c is observed for higher additive concentrations. the curie constant c and the curie-weiss temperature t0 values are given in table 1. fig. 10 the dependence of curie constant on the additive content for doped batio3 samples the linear fitting of the curves ln (1/r 1/max) vs. ln (ttmax), a critical nonlinearity exponent (γ) which represents the slope of the curve was calculated (fig. 11) [39]. fig. 11 ln(1/r 1/rmax) versus ln (ttmax) for selected batio3 samples. the critical exponent  is determined from the slope of curves. 190 v. paunović, z. prijić, m. đorđević, v. mitić the values of the critical non-linearity exponent (γ) is in the range from 1 to 1.2, for samples with a lower concentration of la and from 1.13 to 1.43 for heavily doped samples (fig. 12). the lowest values were observed in samples sintered at 1350°c and doped with 0.1 and 0.5 at% la (γ=1.01) which is in accordance with dielectric characteristics, as these samples show a sharp transition from the ferroelectric to the paraelectric region. for samples sintered at 1290° c these values are higher, especially for samples doped with 2.0 and 5.0 at% la. for these samples, it is characteristic that at the curie temperature, in addition to structural transformation, there are other processes that are associated with defects at the grain boundary. also, for these samples, the experimental results showed diffuse phase transformation, which is in agreement with obtained values for γ. fig. 12 the critical exponent  in function of additive content for la doped samples. table 1 dielectric properties for la/mn doped batio3 la at% r max r 300k c10 5 k tc c t0 c c 10 5 k  tsin=1290 0 c 0.1 2630 1970 2.193 126 45 1.68 1.20 0.5 1750 1380 1.938 126 47 1.86 1.22 1.0 1500 1330 1.843 127 6 1.98 1.28 2.0 1230 1150 1.808 127 -20 3.22 1.30 5.0 1175 944 1.738 129 -22 4.04 1.43 tsin=1350 0 c 0.1 5000 3200 8.395 125 58 1.39 1.01 0.5 2880 2530 8.21 126 -122 1.89 1.015 1.0 2750 2350 5.194 127 -65 4.23 1.015 2.0 1800 1730 4.447 128 -165 4.85 1.13 5.0 1430 1450 3.653 128 -455 5.01 1.40 enhanced dielectric properties in la modified barium titanate ceramics 191 the higher values of the curie weiss like constant (c) have ceramics sintered at 1350° c and they range from 1.39· 10 5 k for 0.1 at% la to 5.01 · 10 5 for 5.0 at% la doped samples. with an increase la concentration, within a single series of samples, the value of c increases. the highest values of c are calculated for samples doped with 5.0 at% la (table 1). 4. conclusion experimental results revealed that dielectric properties depend on the microstructural characteristics, type and concentration of additives and sintering temperature. the finegrained microstructure with grains 0.5 2.0m in size were obtained in low doped samples, whereas the abnormal growth of individual grains took place in the higher doped specimens. batio3 ceramics samples doped with 0.1at% la and sintered at 1350c with a high density and fine grain structure showed the highest values of the dielectric constants at room temperature (r =3200) and at the curie temperature (rmax=5000). for all measured samples the dissipation factor was less than 9%. the curie-weiss law characterizes the permittivity of both series of samples and curie constant is decreasing with an increase of additive content. the highest value of the curie constant was observed in samples doped with 0.1at% la and sintered at 1350c (c=8.39510 5 k). the curie temperature of the doped samples is slightly lower than the curie's temperature of the undoped ceramics, and it is in the narrow range of 125-129 o c. the calculated values for the critical exponent of nonlinearity  ranged from 1.01 to 1.43 which is in accordance with the measured experimental data and the types of phase transition. acknowledgement: this research is a part of the projects oi-172057 and tr-32026. the authors gratefully acknowledge the financial support of serbian ministry of education, science and technological development for this work. references [1] h. kishi, n. kohzu, j. sugino, h. ohsato, y. iguchi, t. okuda, "the effect of rare-earth (la, sm, dy, ho and er) and mg on the microstructure in batio3", j. e. ceram. soc., vol. 19, pp. 1043–1046, 1999. [2] lj. zivkovic, v. paunovic, n. stamenkov, m. miljkovic, "the effect of secondary abnormal grain growth on the dielectric properties of la/mn co-doped batio3 ceramics", science of sintering, vol. 38, pp. 273–281, 2006. [3] m. vijatovic petrovic, j. bobic, t. ramoska, j. banys, b. stojanovic, "electrical properties of lanthanum doped barium titanate ceramics", materials characterization, vol. 62, pp. 1000–1006, 2011. [4] d.h. kuo, c.h. wang, w.p. tsai, "donor and acceptor cosubstituted batio3 for nonreducible multilayer ceramic capacitors", ceramics international, vol. 32, pp. 1–5, 2006. [5] j. qi, z. gui, y. wang, q. zhu, y. wu, l. li, "ptcr effect in batio3 ceramics modified by donor dopant", ceramic international, vol. 28, pp. 141–143, 2002. [6] m. wegmann, r. bronnimann, f. clemens, t. graule, "barium titanate-based ptcr thermistor fbers: processing and properties", sens. actuators a: phys., vol. 135, no. 2, pp. 394–404, 2007. [7] w. caia, c. fu, z. lin, x. deng, w. jiang, "influence of lanthanum on microstructure and dielectric properties of barium titanate ceramics by solid state reaction", advanced materials research, vol. 412, pp. 275–279, 2012. [8] e. brzozowski, m.s. castro, "conduction mechanism of barium titanate ceramics", ceramics international, vol. 26, pp. 265–269, 2000. 192 v. paunović, z. prijić, m. đorđević, v. mitić [9] a. ianculescu, z.v. mocanu, l.p. curecheriu, l. mitoseriu, l. padurariu, r. trusca, "dielectric and tunability properties of la-doped batio3 ceramics", journal of alloys and compounds, vol. 509, issue 41, pp. 10040– 10049, 2011. [10] a.k. yadav, c. gautam, "dielectric behavior of perovskite glass ceramics", j. mater sci: materials in electronics, vol. 25, pp. 5165–5187, 2014. [11] a.k. yadav, c. gautam, "a review on crystallisation behaviour of perovskite glass ceramics", advances in applied ceramics, vol. 113, no. 4, pp. 193–207, 2014. [12] m.s. alkathy, a. hezam, k.s.d. manoja, j. wang, c. cheng , k. byrappa , k.c. james raju, "effect of sintering temperature on structural, electrical, and ferroelectric properties of lanthanum and sodium cosubstituted barium titanate ceramics", journal of alloys and compounds, vol. 762, pp. 49–61, 2018. [13] v. paunović, v. mitić, z. prijić, lj. živković, "microstructure and dielectric properties of dy/mn doped batio3 ceramics", ceramic international, vol. 40, no. 3, pp. 4277–4284, 2014. [14] s. m. park, y. h. han, "dielectric relaxation of oxygen vacancies in dy-doped batio3", journal of the korean physical society, vol. 57, no. 3 pp. 458–463, 2010. [15] k.j. park, c.h. kim, y.j. yoon, s.m. song, "doping behaviors of dysprosium, yttrium and holmium in batio3 ceramics", j.e. ceram. soc., vol. 29, pp. 1735–1741, 2009. [16] s.m. bobade, d.d. gulwade, a.r. kulkarni, p.gopalan, "dielectric properties of aand b-site doped batio3 (i): laand al-doped solid solution", j. appl. phys, vol. 97, p. 074105, 2005. [17] v. paunović, v.v. mitić, lj. kocić, "dielectric characteristic of donor-acceptor modified batio3 ceramics", ceramics international, vol. 42, pp. 11692–11699, 2016. [18] d. gulwade, p. gopalan, "dielectric properties of aand b-site doped batio3: effect of la and ga", physica b, 404, pp. 1799–805, 2009. [19] v. paunović, v. mitić, m. marjanović, lj. kocić, "dielectric properties of la/mn codoped barium titanate ceramics", facta universitatis, series: electronics and energetics, vol. 29, no. 2, pp. 285–296, june 2016. [20] y.w. hu, p.p. yong, l.c. xiao, f.w. jin, "study of reoxidation in heavily la-doped barium titanate ceramics", j. phys.: conf. ser., vol. 152, p. 012040, 2009. [21] x.l. zhao, z.m. ma, z. xiao ,g. chen, " preparation and characterization on nano-sized barium titanate powder doped with lanthanum by sol-gel process", j. rare earths, vol. 24, pp. 82–85, 2006. [22] y. wang, k. miao, w. wang, y. qin, "fabrication of lanthanum doped batio3 fine-grained ceramics with a high dielectric constant and temperature-stable dielectric properties using hydro-phase method at atmospheric pressure", journal of the european ceramic society, vol. 37, pp. 2385–2390, 2017. [23] y. wang, b. cui, y. liu, x.t. zhao, z.y. hu, q.q. yan, t. wu, l.l. zhao, y.y. wang, "fabrication of submicron la2o3–coated batio3 particles and fine-grained ceramics with temperature-stable dielectric properties", scripta. mater., vol. 90-91, pp. 49–52, 2014. [24] m.ganguly, s.k. rout, t.p.sinha, "characterization and rietveld refinement of a-site deficient lanthanum doped barium titanate", j. alloy compd., vol. 579, pp. 473–484, 2013. [25] h. zu, q, fu, c. gao, t. chen, d. zhou, y. hu, z. zheng, w. luo, "effects of baco3 addition on the microstructure and electrical properties of la-doped barium titanate ceramics prepared by reduction-reoxidation method", j. europ. ceram. soc., vol. 38, pp. 113–118, 2018. [26] v. paunovic, lj. zivkovic, v. mitic, "influence of rare-earth additives (la, sm and dy) on the microstructure and dielectric properties of doped batio3 ceramics", science of sintering, vol. 42, pp. 69–79, 2010. [27] w. li, z. xu, r. chu, p. fu, "structure and dielectric behavior of la-doped batio3 ceramics", adv. mater. res., vol. 105–106, pp. 252–254, 2010. [28] c. a. stanciu, m. cernea, e. c.secu , g. aldica, p.ganea, r. trusca, "lanthanum influence on the structure, dielectric properties and luminescence of batio3 ceramics processed by spark plasma sintering technique", journal of alloys and compounds, vol. 706, pp. 538–545, 2017. [29] f.d. morrison, d.c. sinclair, a.r. west, "electrical and structural characteristics of lanthanum-doped barium titanate ceramics", j. appl. phys., vol. 86, pp. 6355–6366, 1999. [30] r. zhang, j.f. li, d. viehland, "effect of aliovalent substituents on the ferroelectric properties of modified barium titanate ceramics: relaxor ferroelectric behavior", j. am. ceram. soc., vol. 87, pp. 864–870, 2004. [31] f.d. morrison, a.m. coats, d.c.sinclair, a.r.west, "charge compensation mechanisms in la-doped batio3", j.europ. ceram. soc., vol. 6, no. 3, pp. 219–232, 2001. [32] f.d. morrison, d.c.sinclair, a.r.west, "doping mechanisms and electrical properties of la-doped batio3ceramics", int. j. inorg. mater., vol. 3, pp. 1205–1210, 2001. [33] j. jeong, y.h. han, "electrical properties of acceptor doped batio3", journal of electroceramics, vol. 13, no. 13, pp. 549–553, 2004. http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/journal/09258388 http://www.sciencedirect.com/science/journal/09258388/509/41 http://link.springer.com/journal/10832 enhanced dielectric properties in la modified barium titanate ceramics 193 [34] h. yoon, c.a. randall, k.h.hur, "difference between resistance degradation of fixed valence acceptor (mg) and variable valence acceptor (mn)-doped batio3 ceramics", j. appl. phys., vol. 108, pp. 064101-9, 2010. [35] y.y. yeoh, h. jang, h.i. yoo, "defect structure and fermi-level pinning of batio3 co-doped with a variablevalence acceptor (mn) and a fixed-valence donor (y)", phys chem chem phys., vol. 14, no. 5, pp. 1642-8, 2012. [36] h. kishi, n. kohzu, y. iguchi, j. sugino, m. kato, h. ohasato, t. okuda, "occupation sites and dielectric properties of rare-earth and mn substituted batio3", j. europ. ceram. soc., vol. 21, pp.1643–1647, 2001. [37] h. miao, m. dong, g.tan, ·y.pu, "doping effects of dy and mg on batio3 ceramics prepared by hydrothermal method", journal of electroceramics, vol. 16, pp. 297–300, 2006. [38] k.albertsen, d.hennings, o.steigelmann, "donor-acceptor charge complex formation in barium titanate ceramics: role of firing atmosphere", journal of electroceramics, vol. 2:3, pp. 193–198, 1998. [39] k. uchino, s. namura, "critical exponents of the dielectric constants in diffuse-phase transition crystals", ferroelectrics letters, vol. 44, pp. 55–61, 1982. http://www.ncbi.nlm.nih.gov/pubmed/22193753 bridging the snmp gap: simple network monitoring the internet of things facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 475 487 doi: 10.2298/fuee1603475s bridging the snmp gap: simple network monitoring the internet of things  mihajlo savić university of banja luka, faculty of electrical engineering, republic of srpska, bosnia and herzegovina abstract. things that form internet of things can vary in every imaginable aspect. from simplest devices with barely any processing and memory resources, with communication handled by networking devices like switches and routers to powerful servers that provide needed back-end resources in cloud environments, all are needed for real world implementations of internet of things. monitoring of the network and server parts of the infrastructure is a well known area with numerous approaches that enable efficient monitoring. most prevalent technology used is snmp that forms the part of the ip stack and is as such universally supported. on the other hand, “things” domain is evolving very fast with a number of competing technologies used for communication and monitoring. when discussing small, constrained devices, the two most promising protocols are coap and mqtt. combined, they cover wide area of communication needs for resource constrained devices, from simple messaging system to one that enables connecting to restful world. in this paper we present a possible solution to bridge the gap in monitoring by enabling snmp access to monitoring data obtained from constrained devices that cannot feasibly support snmp or are not intended to be used in such a manner. key words: iot, monitoring, snmp, coap, mqtt 1. introduction internet of things (iot) may mean many different things to many different people, but few would disagree that in order to achieve the full potential of smart environment based on iot one needs to be able to fully monitor all of the things that do make iot possible. although there is a wealth of monitoring products as well as comparable number of standards and platforms that go hand in hand with them, there is one standard that has been around for a long time, is implemented in almost all networking devices and is even a part of the set of the protocols that enable modern networking to exist.  received june 30, 2015; received in revised form november 12, 2015 corresponding author: mihajlo savić university of banja luka, faculty of electrical engineering, patre 5, 78000 banja luka, republic of srpska, bosnia and herzegovina (e-mail: badaboom@etfbl.net) 476 m. savić as it often is, with age it gained robustness and reliability, but lost some of the appeal to newer generations and younger monitoring systems, though one would be hard pressed to find a monitoring product that does not support it. it is also important to note that monitoring is never easy and in production tried and true solutions have proven themselves worthy throughout the history. to monitor the iot we need to monitor any and every device that makes it or provides the services to it, from smallest and simplest single function sensors to ritualized back-end services needed to transform raw data into usable information. currently, simple network management protocol (snmp) is the protocol that enables uniform monitoring of all parts of the iot infrastructure, save for the simplest of devices. as even those devices need to be monitored, presented in this paper one of the possible snmp based solutions for end-to-end monitoring is. solution described in this paper covers one possible use of snmp in monitoring iot infrastructures, enabling monitoring of just iot devices as well as larger heterogeneous infrastructures that can also contain complex iaas entities that provide services to iot devices. 2. simple network management protocol simple network management protocol (snmp) is a part of internet protocol suite (ip) set of protocols as defined by internet engineering task force (ietf) [1], organization in charge of defining standards and protocols that provide base for existence and exchange of data over the internet. snmp defines a set of standards for network management that include application protocol, database schema, as well as the definition of data sets. relatively small numbers of what we generally consider to be standards are in fact full standards and this only gives weight to snmp and its use in management and monitoring areas. common use of snmp is in default configuration that consists of at least one computer or other device that has administrative role (master) and a group of managed networked devices that are controlled by the master device. every managed device (slave) is running a software component called an agent that is in charge of communication with master node. agents provide for access to various system variables of managed device (e.g. system identification, available resources, resource consumption, etc.) but also provide a mechanism to control the device by setting the values of specified variables to desired values (e.g. bringing network interfaces up or down, changing their addresses, etc). data transfer is typically done over user datagram protocol (udp) and default port numbers 161 on the agent side and 162 on master side. communication can be initiated by the master through use of get operations for accessing the data and set operations used to modify the data, as well as by the managed device through the use of trap or inform operations used to send data to management node. 2.1. versions of snmp protocol snmp standard has been so far defined by three versions as will be described in following text. snmp version 1 (snmpv1) was defined by rfc documents number 1155, 1157 and 1215. although it has a “historic” status today, it is still widely used as it is supported by almost all network equipment manufacturers for nearly all networking devices. security model leaves a lot to be desired as it is based on so called “community” strings that can be seen as a shared secret or access passwords. biggest issue lies in the fact that all communication, including community strings, is performed in unencrypted bridging the snmp gap: simple network monitoring the internet of things 477 form. snmp version 2 (snmpv2) was defined by rfc documents 1441-1452 and introduced a host of improvements in the area of security, by utilizing more complex security model, and performance, by introduction of getbulk operation. snmp version 3 (snmpv3) as defined by rfc documents 3411-3418 is also known as std0062 and represents the official version of the standard recognized by ietf. older versions of the standard are considered to be historic or obsolete. the main improvement in this version is advanced security model based on version v2.it is important to note that there is no compatibility between different versions of snmp protocol as the message format and the protocol itself was changed. possible scenarios for coexistence between different versions of snmp protocol are described in rfc 2576. 2.2. data organization every network device accessible by snmp protocol is defined by one or more management information bases (mib) – a virtual database representing a hierarchically organized set of information available for a given device. mib consists of managed objects (mib objects) that are uniquely identifiable in mib hierarchy by value named object identifier (oid). mib tree has an unnamed root node that is branched out to branches controlled by organizations in charge of standards that are further divided on lower levels of hierarchy. mib object consist of at least one instance that can be seen as a variable or variables. there are two types of mib objects: scalars (that define a single instance of the object) and tables (that define multiple linked instances that make up the mib table). one of the aims of the snmp standard is to solve the problem of differing data representations on various platforms, a task that was solved by the use of subset of iso osi abstract syntax notation one (asn.1) – structure of management information (smi). snmpv1 smi specific data types can be either simple (integer, octet-string, oid) or application-wide (network address, counter, gauge, time tick, opaque, integer, unsigned integer). 2.3. extending the snmp functionality as was previously described, snmp allows for a flexible approach and management of networked devices, but is unfortunately limited to functionality implemented in the agent component. if one desires to access additional data or enable new functionality, there are several approaches, among which the most used are: modification of the agent, use of external programs and use of agentx protocol. the most efficient, but also the most difficult to implement and least flexible approach is modifying the agent to implement required functions through access to and modification of the source code of the agent in question. if it is impossible or infeasible to modify the agent, or if there is a need for several agents on the same device, solution can be obtained by the use of snmp proxy software. use of proxy increases the complexity of the system as the introduction of additional layer in the architecture also requires full support for all relevant requirements on this layer as well (e.g. proxy layer becomes a key component in security aspect). alternative solution is the use of external programs for access to required data. the simplest solution is execution of the external program every time the need for a specific data arises. this approach can have severely degraded performances as the program could be executed during any snmp operation. better solution is parallel execution of 478 m. savić both agent and external program, providing the means for communication between them. as this problem was present since the early days of snmp, parallel to development of various ad-hoc solutions, a process for standardized solution of the problem was created. result of this process is agentx protocol [2] that is based on master-slave principle within one or more devices. this protocol is continuation of snmp-smux and snmp-dpi protocols that were relegated to historic and experimental statuses. in 1995 ietf formed snmp agent extensibility working group [3] which defined an extension framework [2] and corresponding mib document [4]. these documents define the protocol, master agent, sub-agents, coding of all required data types, as well as the handling of all communication between parties. 3. internet of things and monitoring when talking about iot and monitoring, there are two major protocols that cannot be overlooked: coap (constrained application protocol) and mqtt (message queuing telemetry transport). as per rfc 7252 that defines it, coap “is a specialized web transfer protocol for use with constrained nodes and constrained (e.g., low-power, lossy) networks” aimed at m2m (machine to machine) applications and is intended to be usable on devices with very limited processor, memory and networking resources [5]. it is udp based and employs an adapted subset of http optimized for m2m use cases, offering features not present in http but highly valuable in m2m environment such as discovery, multicast support, and asynchronous message exchanges[5]. it was specifically designed to utilize insignificant processing resources in normal operation. from request perspective, coap messages are very similar to http request methods, but are limited to get, post, put and delete messages that implement corresponding http method functions. core (constrained restful environments) link format as described by rfc 6690 [6] defines a well-known entry point ("/.well-known/core") that enables client to list the links hosted by the server and as such can be used for discovery, resource collection and resource directory and similar needs. there is an ongoing work on implementing coap on alternative transports such as tcp, p2p, websockets, zigbee and other network protocols that would enable wider use of coap in iot scenarios. mqtt as defined by oasis [7] is a light weight, open and simple client server oriented publish/subscribe messaging transport protocol. like coap, it is aimed at use in m2m applications and resource constrained devices. it runs over tcp/ip or other network protocols that need to provide ordered, lossless and bi-directional connections (for example zigbee protocol [8]). there is a special version of mqtt aimed at sensor networks under the name mqtt-sn that enables use of mqtt in very unreliable networking conditions by severely resource constrained devices via mqtt-sn forwarders and mqtt-sn gateways [9]. mqtt utilizes publish-subscribe pattern in which clients, here referred to as publishers, connect to servers (messaging brokers) and are able to send the messages to select topics with no need to specify exact recipient of the message, in this context called subscriber. messages are filtered by their attributes, chief of which is called topic and is represented by utf-8 string. topics can have hierarchical organization in which different levels are separated by forward slash. an example of such topic is “building1/room007/ rack02/server27/temperature”. as messaging is asynchronous, topics can exist even with bridging the snmp gap: simple network monitoring the internet of things 479 no currently connected publishers or subscribers which enables for use in unreliable environments as individual nodes can connect and disconnect as the need arises. this allows for considerable flexibility as subscriber can precisely choose to listen only to messages in topics related to, for example, certain room or building, or to listen to all messages related to temperature data in all rooms or buildings. but, iot does not consist of constrained devices only. fundamental to proper functioning of any iot infrastructure is also the proper functioning of interconnecting network as well as, most often, proper functioning of back-end services, running on any kind of server device. further complicating the things is the fact that both networking and service components of modern architectures can be virtualized. this represents a problem specially for monitoring of the performance as the nms traditionally has access to monitoring data inside virtualized environment and performance data of actual physical device running the virtualization software is available on to infrastructure provider. when discussing the networking component, outside of possible specialized hardware, for example mqtt-sn forwarders and similar, almost all networking devices support snmp for monitoring. devices that do not support it are usually unmanageable devices that provide no means for remote monitoring and are as such not suitable for use in described circumstances. virtualized servers running back-end services are under control of infrastructure user and can be easily configured to support snmp monitoring if it is not already the case. as mentioned earlier, the real problem lies in the fact that the virtual machine that contains the service has no access to non-virtualized performance data of physical host. following example illustrates the issue. let’s assume that the server running our hourly data collection service is spending proportionally large percentage of time waiting for database server to complete processing of new records. in non-virtualized situation we could monitor the processes in the system and see that, for example, we are waiting for storage system to complete the writing to disk as another process, archiving of previous data in this example, is consuming the resource at same time. this would give us enough information to solve the issue by rescheduling the offending process or decreasing the priority in order to ensure that data collection is completed properly. but, in virtualized environment, if another virtual machine is consuming resources, we have no idea that is happening, as all the performance data suggests nothing is consuming resources but they are unavailable to our service. this is but one example that illustrates how any of the limited resources on the physical host (processor, memory, networking, storage, etc) can be temporarily unavailable without having any means to determine whether the issue lies with our code or just wider environment. fact that virtual machines can be migrated, without shutting down, from one host to another with different resources available further complicates the monitoring aspect of back-end. 3.1. use of snmp for monitoring the internet of things we can divide devices we want to monitor into three categories depending on their support for snmp. first category consists of devices that do support snmp and provide needed monitoring data. second category includes devices that do support snmp but do not provide needed data directly, while the third category would be made of devices that do not support snmp. for our needs, second and third category are essentially the same, as there is no simple way for our monitoring system to directly access the required data, whatever it may be. 480 m. savić first group mostly consists of devices providing network connectivity as they were usually designed to be remotely managed and monitored by snmp. there is very little to do for us here, barring the cases where supported version of snmp does not provide sufficient security (versions 1 and 2) or there are other reachability issues (vpn, nat, etc). most of these issues can be solved by using snmp proxy services or other similar technique. physical infrastructure in cloud environment can also be in this category, providing that we are self hosting operation or have specific arrangements with hosting provider. there are four principal ways to gather data from devices that do not provide them in suitable form for monitoring: 1. devices that support messaging or event notifications allow us to subscribe to relevant topics and queues or implement listeners and receive the data as it is generated by the device. this is the best approach as all the data is current and the required resources are minimal, but is limited by the support by the monitored device. 2. polling (predefined intervals) is a simple, robust and enables us to estimate needed resources in advance. down sides are possible monitoring of devices that are not required, risk of stale data or higher resource consumption if polling more frequently. 3. proxying data collection as requests are made. this provides for minimal resource usage as we are collecting only the data that is needed when it is needed, but introduces unknown response delay in the system as we have to wait for all required devices to respond, makes estimates about resource usage difficult as we are dealing with, for us, random requests (example would be frequent monitoring of a slow responding device by large number of clients) and makes aggregate data calculations almost impossible. 4. proxying with caching extends previous approach by introducing a proxy level cache that can reduce system load at the price of not returning current data to all requests and significantly increasing the complexity of the system. described approaches can be combined in a number of ways to create hybrid solution that would tailor to one’s specific needs, again at the price of increasing already significant level of complexity. as lindholm-ventola and silverajan have shown in [10], monitoring of constrained devices using coap can be done by using coap to snmp proxy, with or without database component, in principle corresponding to third and fourth approach described above. in their work they conclude that further work must be done on research regarding implementation of notifications in iot monitoring systems. of the four described ways to monitor the devices in iot environment, only the first approach provides for meaningful handling and generating of notifications. remaining three approaches will either introduce a possibly significant delay in case of polling, or might completely miss the event if there were no requests to monitor the device. if a device supports messaging or can generate snmp notifications we can process and respond to event with minimal delay. 3.2. mqtt-snmp bridge in order to enable snmp monitoring of mqtt and mqtt-sn devices, we need to implement a system that would listen to messages generated by monitored devices, if needed send requests to monitored devices and transform collected data into form suitable bridging the snmp gap: simple network monitoring the internet of things 481 for serving to snmp clients. although it is possible to serve standalone snmp clients, most often setup like this are a part of larger monitoring infrastructure where snmp clients are in fact nmss (network management systems). architecture of such iot-snmp bridge system is presented in figure 1. the system consists of: monitored devices either supporting mqtt or in case of severely constrained devices mqt-sn protocol, mqtt-sn gateways and forwarders, mqtt broker, iotsnmp collector and server and various number of snmp clients. mqtt-sn forwarders and gateways exist in configurations where there is a need to monitor mqtt-sn devices. mqtt-sn gateways can, and usually are a part of mqtt broker. the broker itself should be chosen to be a polyglot type broker, enabling simple use of different messaging protocols by other endpoints in the system. choice of a suitable broker would also enable simplifying the infrastructure of a complete system that will be described later in the text. when it comes to collecting the data and serving snmp clients, it is possible to create monolithic system where both functions would be centralized, but by separating the collector and server we can easily scale the system or introduce additional load balancing and fault tolerance by employing multiple instances of needed service. broker infrastructure can also be made scalable and/or fault tolerant by employing suitable broker like apache activemq [11] that can function in both classic clustered environment as well as in a so called network of brokers that enables distributed queues and topics across a number of brokers. fig. 1 overview of iot-snmp bridge 3.3. snmp monitoring of iaas development of monitoring component for iaas in this paper is a continuation of work performed in the areas of grid computing and monitoring of distributed services started in see-grid-sci project [12] that resulted in bbmgridsnmp system [13] and is heavily influenced by implemented solutions. architecture of cloudsnmp system is given in figure 2. data is collected from various iaas endpoints via listening to messages generated by endpoints and sent through queue server (broker), by listening to snmp notifications and performing snmp monitoring of physical devices that are a part of the infrastructure as well as accessing needed information through iaas api specific for a 482 m. savić given iaas implementation or through generalized and standardized interfaces like ones produced by dmtf cmwg (distributed management task force cloud management working group) [14], etsi (european telecommunications standards institute) [15], oasis camp tc (organization for the advancement of structured information standards cloud application management for platforms technical committee) [16] and ogf occi (open grid forum open cloud computing interface) [17]. depicted queue server also supports at least one of the jms (java message service) [18] or amqp (advanced message queuing protocol) [19] protocols. fig. 2 architecture of cloudsnmp (iaas-snmp bridge) overall architecture mirror the one used in collecting and processing the data from constrained devices enabling unification of many of the components in this complex infrastructure. for example, it is possible to use the same brokers connected in load balancing and fault tolerant architecture to handle messages from both constrained devices as well as iaas services endpoints. this also enables for sharing the code on the iot snmp and cloudsnmp collector and server components and further modularization of the code. bridging the snmp gap: simple network monitoring the internet of things 483 there are two principal users of served data: operator and client. operator access should allow for full access to real monitored data and should provide for any information of interest to the operator. this can be achieved by designing and implementing a custom mib that contains tables where rows represent monitored resources and enable the operator to easily access summary data for any required parameter. as the monitoring is already done, at least in part, by using snmp there are existing snmp servers with already configured access rules, thus the simplest solution is to extend their functionality by using agentx protocol. client access has various restrictions imposed and enables the client to access only the data relevant for a specific virtual machine, or set of individual virtual machines. this requirement mandates either the use of many instances of snmp server, one for every monitored virtual machine, or some other mechanism that would allow for efficient access to the monitoring data. in order to provide possibility of the client of iaas infrastructure to access the data of the physical server hosting the monitored virtual machine, we employ snmp contexts. in simple terms, snmp contexts provide for creating multiple instances of data structure, be a full tree or some subset, serving the right instance to client. in our use, this enables one snmp server to perform the function of several servers, one for each context, without unnecessary duplication of resources. as cloudsnmp server has the data from all physical virtualization servers in the infrastructure, by connecting a certain context value to a unique virtual machine, client can be served data from the correct virtualization server even after migration to another server has taken place. example in figure 3 presents data propagation for a snmp sub-tree providing data for processor, memory and basic storage statistics from physical device to cloudsnmp server to be served for infrastructure operator as an extension of existing snmp data by utilizing agentx protocol as well as for the client by using custom snmp server that masks and transforms the data prior to replying to client request. depending on the requirements of the system, it is possible to serve different versions of data to clients, both to ensure that we are serving only the data that needs to be served and to avoid sudden changes in configuration of monitored device after migration. for example, it is possible to provide following levels of data masking: 1. no masking – served data is identical to data gathered from physical server. this enables for best performance monitoring by the client but also provides deep insight into actual configuration of infrastructure and can cause troubles for monitoring software as it is possible for a server to suddenly gain or lose cpu cores, ram or networking interfaces. 2. normalize to virtual machine resource – data will be normalized to maximum resources that can be occupied by monitored virtual machine. for example, if the virtual machine can utilize up to 8 cpu cores and server has 16 cpu cores, served data will be scaled to 8 cpu cores, even after migration to different server with 64 cpu cores. this provides for both limiting the amount of information we are publishing to client and for consistent measurements as the maximum values remain the same. the issue arises from the fact that it is now possible to serve data that is in collision with data recorded within the virtual machine. 3. normalize to fixed value – any resource is to be normalized to a predefined fixed value and be seen as proportion of resource currently utilized. this hides almost all information from end users while still providing for limited performance monitoring and troubleshooting. 484 m. savić fig. 3 data propagation in cloudsnmp to operator and client 3.4. overview of security aspects while iot promises a wealth of future possibilities in future, there are also some worrisome aspects that cannot go unmentioned, security as being the chief one. due to pervasive nature of iot and access to sensitive information, any compromise can have potentially grave consequences. when discussing the security of the described system, we can divide it into several possible attack surfaces: snmp based components, messaging components and iot components. when discussing the security of snmp it is important to distinguish between different versions. versions 1 and 2c are prone to packet sniffing and other general attacks applicable to unencrypted communication. only non-obsolete version of the protocol is version 3 that employs standard cryptographic features. due to the limits imposed by stateless nature of the protocol, the protocol can be attacked by brute force and dictionary attacks. modular architecture of snmp enables use of tls [21] and dtls [22] within transport subsystem [23]. proper configuration and utilization is of paramount importance in order to provide for secure operating environment. messaging components allow for use of complex authentication and authorization mechanisms as well as use of encryption. while this component and its security analysis lie outside of the scope of this paper, it is worth noting that there have been a number of bridging the snmp gap: simple network monitoring the internet of things 485 security vulnerabilities in various widely used ssl/tls libraries in the past few years, affecting systems ranging from simple embedded solutions to mobile devices and dedicated servers [24][25][26][27]. discussing security models of iot is complicated by the nature of iot and the fact that it covers everything from simple sensors to connected cars and vast industrial infrastructures. examples of security issues range from vulnerabilities in widely used zigbee protocol [28] to vulnerabilities present in connected cars [29]. concise overview is given by sadeghi, wachsmann and waidner in [30]. one of the benefits of described monitoring system is a possibility to provide effective monitoring to users of the infrastructure while limiting possible attack surfaces to exposed monitoring servers. it is also worth noting that this approach also enables the system to function as a proxy that exposes secure snmp version 3 to outside world although the monitored devices might be able to support only insecure versions of the protocol. in a stark contrast to resource constrained devices, these servers can possess ample hardware and software resources and are much better equipped to handle possible attacks, possible through detection in cooperation with ids (intrusion detection system) or mitigation when coupled with ips (intrusion prevention system). 3.5. integration with existing systems although there is a possibility to use specialized systems to gather, analyze and present monitoring data related to iot, most organizations already use some form of nms (network management system) that can be used for both management and monitoring of the infrastructure. there exists a vast variety of monitoring system, running on different platforms, utilizing different architectures, operational procedures and data collection methods. some of the representatives of popular nmss are nagios [31], zenoss [32], zabbix [33] and opennms [34]. one example of using zenoss in iot monitoring was given in [35]. mazhelis et al have analyzed the possibilities of use of the coap protocol for monitoring of iot infrastructure as well as adapting existing accounting and monitoring of authentication and authorization infrastructure services (amaais) project [36] for such use [37]. although nms products can differ significantly from each other, practically all of them support at least data gathering via snmp. this enables previously described system to extend the reach of general purpose network monitoring systems to iot part of the infrastructure. depending on the exact purpose and system configuration, it is possible to serve either raw collected data or data derived after previously defined transformations. this can be used to also mitigate or solve some of the privacy aspects of possibly sensitive data as the said data can be thoroughly filtered and modified to provide anonymization and/or aggregation. one example of complex monitoring system in the heterogeneous and distributed computing infrastructure such as see-grid [12] was described in [13]. developing software for systems as diverse as iot infrastructures are can be a daunting task. shear diversity of available devices and implementations provides for a very dynamic environment, often difficult to set up for testing purposes. while developing the system contiki [38] based cooja network simulator [39] can be used in place of physical devices. for testing mqtt and coap as well as stress testing the system simple load generator was developed in java utilizing californium coap framework [40] and fusesource mqtt libraries [41]. proof of concept snmp server was first created in java using jax toolkit [42] utilizing agentx protocol, but was rewritten in python programming language [43] utilizing pysnmp library [44]. 486 m. savić 4. conclusion in this paper we presented one solution for end-to-end monitoring of iot devices, including severely constrained devices such as sensors, iaas installations, as well as the networking infrastructure that connects them together. on the constrained devices end of spectrum, use of coap and mqtt was covered, while networking infrastructure natively supports snmp and four approaches to iaas and virtualization equipment data gathering were presented. integration into existing network management and monitoring systems enables simpler transition to full utilization of iot infrastructures in practice. often neglected aspect of harmonization of operational procedures in different domains can be significantly simplified by enabling uniform view and/or control interface for the whole infrastructure. by limiting exposed attack surfaces to simpler to manage and secure monitoring servers, security of the complete system can be increased, also alleviating some of the privacy aspects of the data gathering through the use of data transformation and anonymization prior to serving. described solution provides for non-blocking asynchronous data collection, scalable and fault tolerant data processing and serving, but most importantly, it provides an uniform standards based interface needed for reliable monitoring. references [1] “rfc 2571 an architecture for describing snmp management frameworks.” [online]. available: https://tools.ietf.org/html/rfc2571. [2] “rfc 2741 agent extensibility (agentx) protocol version 1.” [online]. available: https://tools.ietf. org/html/rfc2741. [3] “agent extensibility working group (agentx).” [online]. available: http://www.ietf.org/html.charters/ agentx-charter.html. [4] “rfc 2742 definitions of managed objects for extensible snmp agents.” [online]. available: https://tools.ietf.org/html/rfc2742. [5] “rfc 7252 the constrained application protocol (coap).” [online]. available: https://tools.ietf.org/ html/rfc7252. [6] “rfc 6690 constrained restful environments (core) link format.” [online]. available: https://tools. ietf.org/html/rfc6690. [7] “mqtt version 3.1.1.” [online]. available: http://docs.oasis-open.org/mqtt/mqtt/v3.1.1/mqtt-v3.1.1.html. [8] zigbee alliance. zigbee specification. technical report document 053474r06, version 1.0, 2005. [9] a. stanford-clark and h. linh truong, mqtt for sensor networks (mqtt-sn) protocol specification,. ibm, http://mqtt.org/new/wp-content/uploads/2009/06/mqtt-sn_spec_v1.2.pdf. [10] lindholm-ventola, hanna; silverajan bilhanan , “coap-snmp interworking iot scenarios,” tampere university of technology, department of pervasive computing. report 3, tampere, 2013. [11] “apache activemq.” [online]. available: http://activemq.apache.org/. [12] a. balaž, o. prnjat, d. vudragović, v. slavnić, i. liabotis, e. atanassov, b. jakimovski, m. savić, “development of grid e-infrastructure in south-eastern europe,” j of grid comp, vol. 9, no. 2, pp. 135-154, 2011. [13] m. savic, s. gajin, m. bozic, “snmp based grid infrastructure monitoring system,” in proceedings of the 34th international convention mipro, 2011, pp. 231-235. [14] d. davis, g. pilz, “cloud infrastructure management interface (cimi) model and restful http-based protocol,” technical report, distributed management task force (dmtf), 2012. [15] “etsi ict standards, gsm, tetra, nfv, gprs, 3gpp, its, umts, utran, m2m.” [online]. available: http://www.etsi.org/standards. [16] “oasis cloud application management for platforms (camp) technical committee | charter.” [online]. available: https://www.oasis-open.org/committees/camp/charter.php. [17] “open cloud computing interface” [online]. available: http://occi-wg.org/. bridging the snmp gap: simple network monitoring the internet of things 487 [18] m. hapner, r. burridge, r. sharma, j. fialli, and k. stout, “java message service,” sun microsystems inc., santa clara, ca, 2002. [19] “advanced message queuing protocol website” [online]. available at http://www.amqp.org/. [20] “rfc 2576 coexistence between version 1, version 2, and version 3 of the internet-standard network management framework.” [online]. available: https://tools.ietf.org/html/rfc2576. [21] “the transport layer security (tls) protocol version 1.2” [online]. available: https://tools.ietf. org/html/rfc5246. [22] “datagram transport layer security” [online]. available: https://tools.ietf.org/html/rfc4347. [23] “transport layer security (tls) transport model for the simple network management protocol (snmp)” [online]. available: https://tools.ietf.org/html/rfc5953. [24] “cve-2014-1266” [online]. available: https://web.nvd.nist.gov/view/vuln/detail?vulnid=cve-2014-1266. [25] “cve-2015-0282” [online]. available: https://web.nvd.nist.gov/view/vuln/detail?vulnid=cve-2015-0282. [26] “cve-2014-0160” [online]. available: https://web.nvd.nist.gov/view/vuln/detail?vulnid=cve-2014-0160. [27] “microsoft security advisory 3046015.” [online]. available: https://technet.microsoft.com/en-us/library/ security/3046015. [28] “zigbee exploited – the good, the bad and the ugly” [online]. available: http://cognosec.com/zigbee_ exploited_8f_ca9.pdf [29] s. kamkar, “drive it like you hacked it”[online]. available: http://samy.pl/defcon2015/2015-defcon.pdf [30] a.-r. sadeghi, c. wachsmann, and m. waidner, “security and privacy challenges in industrial internet of things”, in proceedings of the 52nd annual design automation conference, 2015, p. 54. [31] “nagios core. nagios open source project.,” nagios. [online]. available: https://www.nagios.org/. [32] “zenoss,” zenoss. [online]. available: http://www.zenoss.com/. [33] “zabbix: the enterprise-class open source network monitoring solution.” [online]. available: http://www.zabbix.com/. [34] “the opennms project.” [online]. available: http://www.opennms.org/. [35] u. gupta, “monitoring in iot enabled devices,” arxiv preprint arxiv:1507.03780, 2015. [36] o. mazhelis, m. waldburger, g. s. machado, b. stiller, and p. tyrväinen, “extending monitoring and accounting infrastructure towards constrained devices in internet-of-things applications”, technical paper, university of zurich, 2013. available: https://www.merlin.uzh.ch/contributiondocument/download/5076 [37] b. stiller, “accounting and monitoring of aai services.” switch journal, 2010(2):12–13,october 2010. [38] a. dunkels, b. grönvall, and t. voigt, “contiki-a lightweight and flexible operating system for tiny networked sensors,” in proceedings of the 29th annual ieee international conference on local computer networks, 2004, pp. 455-462. [39] f. osterlind, a. dunkels, j. eriksson, n. finne, and t. voigt, “cross-level sensor network simulation with cooja”, in proceedings of the 31st ieee conference on local computer networks, 2006, pp. 641-648. [40] “californium (cf) coap framework java coap implementation.” [online]. available: http://people.inf. ethz.ch/mkovatsc/californium.php. [41] “fusesource mqtt libraries.” [online]. available: https://github.com/fusesource/mqtt-client. [42] “jasmin: jax java agentx client toolkit.” [online]. available: https://www.ibr.cs.tu-bs.de/projects/ jasmin/jax.html. [43] g. vanrossum and f. l. drake, the python language reference. python software foundation, 2010. [44] “snmp library for python.” [online]. available: http://pysnmp.sourceforge.net/. 12863 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 127 149 https://doi.org/10.2298/fuee2501127g © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper uncertainty of the renewable energy accessing the distribution system for optimal voltage enhancement and minimization of losses using gorilla troop optimization shubash kumar guriro1, muhammad suhail shaikh2*, chandar kumar3, shahid a. iqbal4 1dr. g. m panhwar institute of knowledge learning and skills, sindh pakistan 2 school of physics and electronic engineering, hanshan normal university, guangdong, china 3department of electrical engineering dha, suffa university, karachi, sindh, pakistan 4department of electrical engineering, svkm’s institute of technology, dhule, india orcid ids: shubash kumar guriro https://orcid.org/0000-0002-7087-0242 muhammad suhail shaikh https://orcid.org/0000-0003-1082-8664 chandar kumar https://orcid.org/0000-0002-7354-5955 shahid a. iqbal https://orcid.org/0000-0003-2815-8304 abstract. in recent decades, wind turbines (wt) and solar panels (pv) have been integrated into electrical power systems, particularly within power distribution networks. given the rising energy demands and the variability of renewable energy sources, the design, operation, and control of power networks have become increasingly challenging. this research focuses on the reduction of technical losses and the enhancement of voltage levels within distribution systems by harnessing the capabilities of solid-state transformers (sst) to provide dual-reactive power support. it assesses the impact of load demands and the integration of distributed generation (dg) units, such as pv and wt, while incorporating sst into the distribution system. the study employs the k-medoid algorithm in a data-driven approach to analyze load demand, solar irradiance, and wind speed. six test cases are formulated to evaluate the synergistic effects of combining sst with dg technologies, including wind turbines, pv arrays, and batteries. a gorilla troop optimization (gto) algorithm is employed to determine the optimal placement and sizing of sst, wt, pv, and bes to optimize voltage levels and minimize energy losses in radial power distribution networks. to validate the results, all six cases are compared against ieee 33 bus data from radial distribution systems, demonstrating the superior performance of the gto approach in all cases. this study achieved a significant improvement in the voltage profile compared to the current configuration. active power losses were cut by 82.36% thanks to the optimization of ssts with dual reactive power support and variable dg, as received july 27, 2024; revised august 13, 2024; accepted august 19, 2024 corresponding author: muhammad suhail shaikh hanshan normal university, guangdong, china. e-mail: suhail.shaikh@live.com https://orcid.org/0000-0002-7087-0242 https://orcid.org/0000-0003-1082-8664 https://orcid.org/0000-0002-7354-5955 https://orcid.org/0000-0003-2815-8304 128 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal opposed to the existing distribution system. reactive power losses were also reduced by 86.36%, and the voltage profile saw a marked enhancement, rising from 0.92 p.u. to 1.0 p.u., demonstrating a substantial improvement. reactive power usage decreased by 71.19%. the study presents a novel solution for long-standing problems related to high distribution system losses and low voltage levels by integrating ssts with dg systems. key words: distributed generations, power loss reduction, voltage improvement, gorilla troop optimization 1. introduction 1.1. background and related work today's electrical grid makes use of renewable energy sources (res). for a greener tomorrow, renewable energy sources like solar panels and wind turbines should be prioritized in the electrical grid. with rising demand and penetration levels and the intermittent nature of renewable energy resources, power system planning, operation, and control are becoming increasingly challenging [1-2]. voltage fluctuations at the consumer's terminal, a rise in load demand, and a deterioration in system efficiency can all be traced back to power losses in the distribution network and its auxiliary equipment, such as the bus and line [3-5]. to improve the dependability and stability of contemporary power systems [6], minimizing the effects of power quality metrics such as voltage dips, harmonics, and power losses is important. reactive power impacts power quality because it mitigates grid voltage fluctuations, boosts power transfer, and lessens line losses when handled adequately by control devices [7-8]. for proper appliance operation, users require a remarkably stable supply voltage [9]. to keep the voltage acceptable within the limit, the reactive power assistance (rpa) must support reactive power demand and sustain bus voltages [10]. distribution systems use capacitor banks to improve the power quality in the voltage/power profile issue and lower the cost of power losses. by strategically placing capacitor banks, we can cut down on the bus and the current, reducing reactive power. the uncertainty characteristics of renewable dgs also need to be factored into the optimal deployment of energy storage systems (ess) and capacitor banks for the optimization process to be carried out and for the findings to be valid in the microgrid uncertainty associated with photovoltaic (pv) and suitable probability functions must adequately characterize wind turbine (wt). reactive power compensators adjust voltage profile, power losses, greatest voltage rise, and voltage fluctuations, on-load tap changing transformers, and voltage regulators used by distribution and utilization companies and their workers. [11-12]. control strategies and additional devices are used to increase the quality of power of a distribution system integrated with renewable energy sources [13]. flexibility in ac transmission systems (facts) devices is critical in improving several aspects of the power quality in highly renewable penetration systems [14-17]. when it comes to dealing with the harmonics concerns that arise in a renewable energy system, voltage stabilization, and loss improvement, various facts devices have been proposed. these include the thyristor-controlled series capacitor, static var compensator, and static synchronous compensator (statcom), and the unified power quality controller (upqc) is used for voltage profile improvement and harmonics mitigation in grid-connected hybrid renewable energy sources [18-19]. advanced control methods for converters establish a vital link between the utility grid, aiding in the provision of reactive power, which serves to minimize power losses uncertainty of the renewable energy accessing the distribution system for optimal voltage… 129 and voltage fluctuations [20-21]. this research delves into the operation of battery energy storage systems within distribution networks, enabling them to supply reactive power ancillary (rpa) through voltage source converters. the effectiveness of these devices in loss prevention hinges on their specific location and size, a point that remains consistent across all cases discussed in the existing literature. as a result, contemporary power networks demand flexible and adaptable planning strategies to accommodate the variable influx of renewable energy resources (res). recent research papers related to optimization [22] have put forth a spectrum of approaches for controlling microgrids and integrating renewable energy resources. in [23], the study contrasts backpropagation control (pca) and synchronous reference frame theory (srft) in terms of power factor control within a radial distribution system. [24] introduces a hybrid optimization technique involving shuffling frog jumping and particle swarm optimization to enhance voltage profiles and reduce losses in radial distribution systems. [25] presents the binary particle swarm optimization and shuffled frog leap (bpso-slfa) algorithms for the optimal placement of distributed generation in radial distribution systems, aiming to improve voltage profiles and minimize power losses [26] suggests the strategic placement of capacitors and pv systems for the reduction of power losses in radial distribution systems. furthermore, [27] employs a hybrid optimization approach for capacitor relocation and reconfiguration, thus enhancing the overall performance of the distribution system. the utilization of firefly optimization [28] in a radial distribution system aids in determining the optimal placement and sizing of capacitors. [29] employs the modified whale optimization (mwo) technique for estimating the parameters of both three-phase and single-phase transmission lines. in [30], grey wolf optimization is employed to optimize parameters for three-phase transmission lines. in [31] explores a hybrid approach involving the hhopso algorithm for voltage-constrained reactive power planning, which demonstrates a substantial reduction in active power losses and operational costs, while preserving voltage stability. to reduce transmission losses through the strategic use of capacitors, [32] recommends employing the oppositional crow search optimization technique. in [33] introduces a flux linkage method for predicting transmission line parameters in systems with bundled conductors. this method utilizes power-flow equations to enhance the accuracy of transmission-line parameter estimation, particularly in terms of temperature correction resistance, thus improving the overall efficiency of power system operation. recently, there has been an uptick in interest in a distribution transformer powered by power electronics, specifically, the solid-state transformer. it is a lighter, more functional replacement for the fundamental frequency transformer. it is smaller, has fault tolerance, energy routing, and reactive power support, and is meant to replace the existing transformer [34]. a good illustration of this would be the employment of devices and circuits made from solid-state semiconductor material, which make it possible to control current and voltage profiles. furthermore, the voltage source converters could be capable of handling a controlled dc bus., which may link to the microgrid [35-36]. it is hypothesized that it might be used as a volt/var control device, in which it would either inject or absorb reactive electricity to/from the grid in order of total voltages. in [37] and [38], research has been done on the possibility of utilizing sst to supply auxiliary grid services. the authors of [39] constructed an sst model to analyze the effect of changing a standard metal transformer. in [40], radial distribution losses in solid-state transformers can be minimized owing to dual reactive power correction. the authors of this research suggested employing particle swarm optimization to locate and scale sst installations to reduce network losses. 130 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal 1.2. motivation and incitement with the advent of technological progress, the demand for electrical energy has surged, presenting challenges in both its generation and distribution. over the past few decades, renewable energy resources (res), including wind turbines and photovoltaic systems, have been incorporated into power distribution grids. coping with the growing energy demand and the intermittent nature of renewable sources has made it increasingly complex to plan, operate, and manage power systems. different studies in the literature have revealed that weak distribution networks and line losses at low voltage levels result in the wastage of electrical power. these issues have led to investigations into reactive power compensation techniques employing power electronic compensators, capacitor banks, and various other methods. more recently, there has been a substantial focus on modifying solid-state transformers (ssts) to provide additional support to distribution systems. this research is aimed at improving the voltage levels within a radial distribution system while simultaneously reducing power losses, taking advantage of the reactive power compensation capabilities of ssts. additionally, this study seeks to perform a technical evaluation of a distribution system that integrates distributed generation sources such as photovoltaic systems, wind turbines, and battery energy storage (bes). the analysis accounts for variations in daily load, solar irradiation, and wind speed on an hourly basis. in addressing these challenges, the most up-to-date strategies using gorilla troop optimization have been applied to find the optimal solution, offering a multi-faceted approach to the problem. ▪ the proposed approach is novel because it uses optimization to integrate sst, dg, and bes in planning distribution networks. ▪ capabilities for more rapid convergence ▪ lower calculation times, resulting in more straightforward computations ▪ using the same settings for several problems ▪ easy to implement 1.3. contribution and organization the main contribution of this proposed work is as follows. ▪ this research uses the dual reactive power compensation feature of a solid-state transformer in a radial distribution system considering the variability of load demand, energy storage system, and renewable energy generation from wind turbine and photovoltaic systems. ▪ gorilla troop optimization (gto) is used to optimize the placement and number of photovoltaic (pv), wind turbine (wt), and battery energy storage (bes) while accounting for solar irradiation and wind speed variation along with solid state transformer (sst) and it is compared with ga [41] and pso [42]. ▪ this analysis considers hourly data on annual load demand, solar irradiance, and wind speed over a year. ▪ the yearly datasets are partitioned into 24 groups representing the 24 hours of the day by using the k medoid algorithm. this clustering method comes close to recreating the randomness of data samples collected daily during a year. ▪ this research aims to determine and optimize the voltage of a radial distribution system by comparing the voltage at the system's least-voltage-disturbed nodes to a common value. ▪ another goal of this research is to minimize the power losses within the radial distribution network. uncertainty of the renewable energy accessing the distribution system for optimal voltage… 131 however, there are a few limitations of the proposed model with sst integration such as the cost of sst is comparatively high as the cost of conventional transformers and the limited reduction in the following section 2, the system simulation of a radial distribution system is presented: section 3 provides load flow analysis showing the effects of pv, wt, and sst: section 4 provides the proposed parameter and its setting for the simulation of case studies: section 5 provides the research methodology and short overview of gorilla troop optimization as well as k-medoid algorithm for the data-driven process. section 6 shows the proposed method's result and discussion, and the article is finally concluded in section 7. 2. proposed system simulation electric power is distributed to consumers through a network that encounters a myriad of factors impacting its stability, including consumer diversity, load fluctuations, weather variations, pricing structures, and other variables. consequently, the distribution system exhibits inherent volatility, unreliability, and inherent unpredictability as mentioned in fig. 1. to obtain more precise results, it is essential to formulate an optimization model that accommodates fluctuations in load demands. moreover, when the network incorporates distributed generation (dg) devices such as wind turbines or photovoltaic panels, the system model must account for the intermittent output from these dg units. in the context of clustering, items are organized into classes or clusters based on their similarity to other objects within their cluster and dissimilarity from those in other clusters. clustering serves as a valuable technique for uncovering meaningful relationships within a dataset. clustering methods prove instrumental in detecting and interpreting patterns within extensive datasets, including parameters like wind speed, solar irradiance, and load requirements. the k-medoid algorithm is deployed for these clustering techniques, encompassing data sources like solar resource information and annual wind speed statistics, extracted from [43], and annual load demand data derived from [44]. this approach closely emulates the inherent unpredictability of daily data samples collected from a broader dataset spanning an entire year. fig. 1 representation of the proposed system 132 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal 2.1. wind speed simulation this research uses k medoid clustering to partition a yearly wind speed database into 24 hourly clusters. wind speed patterns are the same year-round as on a single day. each cluster should occur daily at any moment. each group has a unique wind speed range. fig. 2(a) illustrates the multistep wind speed curve derived by transforming the 24 clusters returned by the k medoid method. in addition, the power output of each wind speed cluster is calculated by applying eq. (1) shown in fig. 2(b) to the wind power curve shown there. this allows for a more accurate assessment. 0, , p , 0, in in in ratedwtr wt r in r out wtr out v v v v v v vp v v v v v p v v    −  =   = −        (1) winds below the cut-in speed, vin generate no power, whereas winds over this threshold do. after going faster than vr, the output power must still be held to pwtr. to prevent rotor damage, wind turbines are stalled at a speed more significant than the shutdown speed, which is denoted by the constant vout. to bring the rotor to a halt, a braking mechanism is employed. (a) (b) fig. 2 (a) wind speed curve (b)wind speed and active power output uncertainty of the renewable energy accessing the distribution system for optimal voltage… 133 2.2. solar irradiance simulation in this study, k-medoid clustering divides an annual sun irradiance database into 24 hourly clusters. the performance patterns of photovoltaic cells are consistent throughout the year, just as they are on any given day. every cluster ought to take place daily at any time. irradiance levels might differ significantly between groups due to their different compositions. as observed in fig. 3, k-medoid clusters are converted into multistep solar irradiance curves. the ppv power output can be determined once the solar irradiation sie has been evaluated using the following relations. . [1 .( )] sc stc ie scstc mpt module amb i s s i k t t = + − (2) . .[1 .( )]ie pv stc mpt module amb stc s p p k t t s = + − (3) where ppv, maximum power of pv module pstc, power at standard test conditions, (1000wm-2) sie, effective solar irradiance sstc, solar irradiance at standard test conditions kmpt, maximum power temperature coefficient tmodule, pv module temperature tamb, ambient temperature isc, short circuit current of photovoltaic module iscstc, short circuit current at standard test conditions fig. 3 multistep solar irradiance curve 2.3. load demand modeling a database of yearly load demands is partitioned into 24 clusters using the k medoid clustering method. to get the per-unit demand profile, we divide the annual demand profile by 95% of the most outstanding value in the annual data. specifically, this is done so that the per unit data only exceeds the peak load level of 1.0 p.u. this indicates that a load of 1.0 p.u. is assured when the cluster analysis has been performed. fig. 4 (a) illustrates the multistep load duration curve and it is assumed that the load pattern will be the same as that observed on a single day, as shown in fig. 4 (b). 134 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal (a) (b) fig. 4 (a) load duration curve (b) daily load deviation curve the load demand imposed on a bus q at any particular time can be calculated using the following equations, ( ) ( ).,p t v t pd q f q= (4) ( ) ( ).,q t v t qd q f q= (5) pq, qq is the load demand on bus q, vf (t) is the variation factor on a time basis. this work's real and reactive power loads fluctuate according to the same factor. thus, it is assumed that the power factor is consistent in the baseline scenario. 2.4. reactive power compensation modeling for solid-state transformer (sst) the sst is a power electronics-based transformer with many benefits, including higher efficiency, reduced size, increased fault tolerance, and the ability to provide reactive power. these benefits have led some to argue that the sst is a viable alternative to the traditional transformer. fig. 5 shows the standard sst design, and table 1 provides a summary of the roles played by each step. in this study, the reactive power support capabilities of stage i inverters and stage iii inverters were utilized. while stage i provides grid-reactive power qsstg to manage load bus voltage, stage iii is capable of supporting load reactive power demand qsstd locally. estimating the grid reactive power support level requires using the growth rate in the stage-i converter's apparent power rating. if the actual power requirement of the load at the bus q for the tth hour of the day is λ % more than the stage-i converter rating, uncertainty of the renewable energy accessing the distribution system for optimal voltage… 135 then it is possible to express srr,q(t) as in eq. (6), the reactive grid power can be represented in eq. (7). stage 1: , ,( ) (1 0.01.. ).. ( )rr q d qs t p t= + (6) where, srr, rate of rising of apparent power rating. pd, real power demand 2 2 , , ,( ) ( ( )) ( ( ))sstg q rr q d qq t s t p t= − (7) stage 2: stage ii only supports the load real power and can be rated lesser than stage –iii. stage 3: as an additional note, the reactive power source rather than the network is used to provide the load, as shown in eq. (8). , ,( ) ( )sstg q d qq t q t= (8) sst's dual-reactive power capacity uses stages i and iii for reactive power. in cases where the sst's rating is higher than the load rating, the situation is presumed that it can bear the entire weight; otherwise, the sst and dt will share the load. let's say a load bus is rated slb kva. sst's perceived power capacity is proportional to load rating, thus: .sst lbs s= (9) where, slb, definite load bus , sst rating of the load rating stage-iii inverters supply real power to the load bus at an angle that corresponds to a power factor, φ, and the sst represents the local reactive power demand, expressed by eq. (10) and eq. (11), respectively. .cossst sstp s = (10) . .sinsst lbq s = (11) fig. 5 schematic arrangement of solid state transformer [35] 136 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal table 1 summary of the roles played by each step of sst [1] stage purpose input output stage-i ac-dc conversion mv ac hv dc stage-ii dc-dc conversion hv dc lv dc stage-iii supply to load lv dc lv ac 2.5. loss modeling of solid state transformer and distribution transformer the losses of nth transformer ( n dtlp , ) can be calculated as in given eq. (12), [45]. 2 , , , , . . cos d qn n n l dt nll dt scl dt n p p p p alf s    = +       (12) ssts could replace old distribution transformers by offering grid flexibility and control, such as power routing or rpa, according to distribution system research. recent research shows sst is less effective than a conventional transformer. power converters add hard-toestimate conductivity and switching losses. ssts are expensive, with three times the loss of regular distribution transformers [46]. this article uses an sst approximation loss model, as shown below. sstsst n sstl sp ., = (13) where, n dtlp , , actual losses of distribution transformer n dtnllp , , no load losses of distribution transformer n dtsclp , , short circuit losses of distribution transformer sn, rated capacity of nth distribution transformer units cos , power factor alf, annual load factor n sstlp , , losses of sst sst, the capacity factor of sst configuration ssst, rated capacity of sst. 3. load flow analysis the forward-swept direct power flow analysis method is used in this article. power support for both the active and reactive bus comes from the negative loads. analyzing the dt and sst losses, an additional load is placed on the system in the form of losses. for a bus q, the kva demand at the tth hour is computed as, 2 2 , , ,( ) ( ) ( ) ( ) ( )d q d q d qs t p t q t   =  +         ; busnq 1= (14) the corresponding equivalent current injection for bus q at ith iteration is computed as, ( ) ( ) ( )( )i r i i i q q q q qi t i v j i v= + (15) uncertainty of the renewable energy accessing the distribution system for optimal voltage… 137 where, sd,q is apparent power demand at qth bus pd,q is active power demand at qth bus qd,q is reactive power demand at qth bus i qv is bus voltage at ith iteration for qth bus i qi is equivalent current injection at ith iteration for qth bus r qi and i qi is accurate and imaginary parts of equivalent current injection at the ith iteration for qth bus the actual power demand of the buses with wind and photovoltaic dg’s can be calculated as: , ,( ) ( ) ( ) ( )m m m m d q wt d q wt wt wt dt wtp p p p   = − + (16) , ,( ) ( ) ( ) ( )m m m m d q pv d q pv pv pv dt pvp p p p   = − + (17) where wind and photovoltaic dg position is represented by m wt , m pv respectively and m varies until wind turbine and photovoltaic units mwt and mpv. the actual power requirement for sst buses is computed as, , ,( ) ( ) ( )m m m d q sst d q sst sst sstp p p  = + (18) sst position is represented by m sst m varies till the number of sst units msst. the real power requirements of a distribution transformer (dt) are, , ,( ) ( ) ( )m m m d q dt d q dt dt dtp p p  = + (19) where m dt represents load bus m varies till the number of dt units mdt. now, the reactive power requirement can be calculated as: , , , ,( ) ( )m m d q sst d q sst sstl q sstg qq q q q = − − (20) the branch current is obtained from the following backward sweep method. ( ) ( )i i br qi t bibc i t=  (21) bibc is the direct load flow bus injection to the branch current matrix [47]. the forward sweep method updates the voltage on each load bus. ( )( ) ( )( ) ( ) ; 1 re se i i i q r q r br br r brv b t v b t i t z b n= −  = (22) where, brre , brse , nbr and zbr represents the receiving end bus, sending end bus, number of branches, and branch impedance, respectively. after performing the necessary modifications to the voltage, the voltage errors can be verified at each bus to verify voltage convergence. bibc simplifies nodes beyond branch detection, saving computation time. 138 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal 3.1. problem formulation and objective function 2 1 ,min( ) 1s busf v q n=  = (23) 2 2 ( ( )) 1br br br brf i r t n=  = (24) 1, 2min( )f f (25) 4. proposed parameter setting the ieee 33 bus radial distribution network serves as the test system for this particular piece of research. a bus system with the ieee 33 standard operates at 12.66 kv and 100 mva and has an apparent power demand of 436.35 kva. table 2 contains the results of several simulation settings in their respective values. to determine the operating constraints of sst during stage iii, the following eq. (26) is utilized. , ,( ) ( ) ( ) q icr d q d q sstiiis t s t s t s=  (26) where, sd,q is the total load demand at the qth bus for the tth hour of the day, and icr ssts is the individual sst capacity rating. table 2 parameter setting parameter values kmpt 2 tmodule 20 ºc pstc 20 w/m2 sstc 12 w/m2 pwt 300 kw vin 4.5 m/s vr 13 m/s vout 25 m/s v 1.0 p.u γ 37.3 w/kva ssst 500 kva 5. proposed methodology the main objective of this research is to analyze the performance of the radial distribution system integrated with distributed generation considering a solid state transformer, which includes transformer and sst losses, as well as their effect on the power losses and voltage profile of the distribution system. the suggested gto algorithm is shown in fig. 6. uncertainty of the renewable energy accessing the distribution system for optimal voltage… 139 5.1. k-medoid algorithm unsupervised machine learning algorithm k-medoid clusters data. it partitions to select k exemplary samples [48]. a finite dataset's medoid is the data point with the lowest average dissimilarity. initialize k cluster medoids by randomly selecting k components from the set. 1. distances between s elements and medoids are calculated. each data point has a medoid. 2. update medoids to update the editor while incurring as little loss as possible, and we must replace the old medoid with all the other (m-1) points in the cluster. the following cost function determines minimum loss. 2 1 2 1, ,..... arg min k k i xin im m m x m==   −  (27) 3. repeat: then repeat steps 2 and 3. start initialize annual wind, solar irradiance and load demand data respectively evaluate data to get 24 clusters for daily 24 hours analysis initialize gorilla population select value of λ t=1 determine losses of sst from (13) modify active power from (16) and (17) modify reactive power from (20) compute losses of transformer from (12) evaluate equation (26) run power flow t 24not = t+1 yes determine objective functions from (24)and (25) maximum iteration reached no yes best solution as the best locations and best objective function values end update the gorilla population fig. 6 proposed gto flowchart 140 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal 5.2. gorilla troop optimization technique optimization is the mathematical process of determining the most efficient, cost-effective, or highest-performing solution to a problem by adjusting certain variables within given constraints [49]. gorilla troop optimization is a new metaheuristic algorithm based on the social behaviors of groups of gorillas. the two phases of the algorithm, exploration, and exploitation, are fully explained in the paper using mathematical principles [50]. the gto method simulates optimization tasks (exploration and exploitation) by using five different operators, all named after different things gorillas do. during the exploration phase, three different operators have been used to move to an uncharted area to improve gto exploration. with the second operator, the gorillas' main goal changes from exploring to taking advantage of what they find. by adding migration toward a known destination as the third operator in the exploration phase, the gto is much better able to search for different optimization spaces. but in the exploitations phase, we use two operators, which improve search performance. 5.2.1. exploration phase at each gto stage, the best candidate solution is a silverback gorilla. exploration strategies include movement to other gorillas to increase gto exploration balance exploitation and exploration and migrate towards a known site to increase gto's search capability. when rand is less than a specific value (p), the migration technique to an unknown location is selected. in addition, a migration strategy toward other gorillas has been selected if the rand is less than 0.5, and a migration in the direction of an already designated place is selected if the rand is more significant than 0.5. the following is a mathematical formulation of the three tactics used during the exploration phase. ( ) 1 2 3 ( ) ( 1) ( ) ( ) , 0.5 ( ) ( ( ) ( )) ( ( ) ( )) 0.5 r r r ul ll r llrand p gx t r c x t l h rand x i l x t gx t r x t gx t rand  −  +   + = − + +    −  − +  −  (28) where x(t) and gx(t + 1) denote the gorilla's current position vector and the potential of the gorilla's position vector in the subsequent t iterations, while rand, r1, r2, and r3 denote random numbers between 0 and 1. before the optimization process, you will need to choose a value between 0 and 1 for the parameter known as "p", which indicates the likelihood of selecting a migration plan that leads to an unidentified position. the xr and gxr each represents a single gorilla chosen from the entire population and one of the vectors of gorilla candidate positions that can be chosen randomly, respectively. the variables' lower limit (ll) and the upper limit (ul) are denoted by their corresponding initials. eqs. (29), (31), and (32) can be used to provide a mathematical representation of the values of the variables c, l, and h, respectively. 1 it c f maxlt   =  −    (29) ( )4cos 2 1f r=  + (30) l c l=  (31) ( )h z x t=  (32) [ , ]z c c= − (33) uncertainty of the renewable energy accessing the distribution system for optimal voltage… 141 the cosine function and random values from 0 to 1. l and z represent random values between [-1, 1] and [-c, c]. at the end of the exploration phase, the cost of all gx solutions is reviewed, and if gx(t) x(t), gx(t) becomes the best solution (silverback). 5.2.2. exploitation phase following the silverback and rivalry for adult females are gto exploitation methods. using c in eq. (29) and the specified parameter w, one of two tactics can be chosen, as shown next. the silverback gorilla leads his troop in making decisions and finding food. c > w selects this strategy. the equation describes this behavior. ( 1) ( ( ) ) ( )silverbackgx t l m x t x x t+ =   − + (34) the gorilla position vector is represented by x(t), whereas the silverback gorilla position vector, which provides the optimal answer, is represented by xsilverback. 1( ) 1 1 ( ) ) )n g g i im gx t n =   =     (35) it should be illustrated where each potential gorilla's vector is located in iteration t, where n is the number of gorillas. 2lg = (36) l can be calculated using eq. (31). if c is greater than w, the second strategy assigned for the exploitation phase is competition for adult females. when adolescent gorillas reach their full maturity, they compete fiercely with other males for the opportunity to mate with adult females. the mathematical representation of this behavior can be found in eq. (37). ( ) ( ( ) ( ) )silverback silverbackgx i x x q x t q a= −  −   (37) 52 1q r=  − (38) a e=  (39) 1 2 , 0.5 , 0.5 n rand e n rand  =   (40) while the symbol r5 represents random values in the range [0, 1], the variable q simulates the impact force, which may be the solution to eq. (38). in the event of a fight, the coefficient a stands for a vector that shows the level of violence, and this vector's value can be calculated using the eq. (39). in eq. (39), the parameter has a value that was determined before the optimization procedure, and variable e is used to mimic violence's influence on the solutions' dimensions. after the exploitation phase, a group formation operation is carried out. during this operation, the cost of every gx solution is calculated. if the cost of gx(t) is lower than the cost of x(t), the gx(t) solution is substituted for the x(t) solution, and the best solution that can be obtained from the entire population is referred to as a silverback. 142 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal 6. result discussion & case study analysis the proposed program is implemented on a personal computer with a 2.4 ghz intel (r) core (tm) i3 -7100 cpu. the computer also has 8 gb of ram, which was used to replicate the study in a programming environment called matlab r2019a. matlab's artificial gorilla troop optimization techniques solve the optimization challenge. to prove the validity of the methodology, this study analyses 6 test cases. 6.1. test case 1. existing radial distribution system the units are put through their paces in this test scenario using the ieee 33-bus radial distribution system. the system has a voltage of 12.66kv, a load size of 3.715mw, and a voltage of 2.3mvar [51]. there are 33 buses and 32 lines in total. according to the ieee 33 rds, the typical losses under full load conditions are 202.67 kw. in this system, the minimum voltage is 0.95p. u while the maximum is 1.05p.u. the magnitude profile of the system voltage is shown in fig. 7. the lowest voltage was found on bus 21, at 0.92 p.u. when comparing the voltage profile before and after the installation of sst with wind and pv units, you can see a significant improvement in the latter. fig. 7 voltage magnitude profile of all six cases 6.2. test case 2. analysis of sst position with dt losses analysis position of sst at three positions with passive distribution network without any dg, bes. however, considering dt losses which have an impact on total losses. fig. 8. shows the losses of the distribution transformer along with the total installed capacity. optimal placement of sst at three locations without any dg considered in this case, as shown in table 4. fig. 8 dt losses along with installed capacity 6.3. test case 3. sst position with one dg (wt) in this scenario, analyze the position of sst at one location with dg (wt). overrating by 10% changes grid reactive power qsstg. while running this case simulations, bus 21 with uncertainty of the renewable energy accessing the distribution system for optimal voltage… 143 500kva capacity obtained the optimal placement of sst and wind turbine, while assessing sst grid rpa. hence, proving sst stage-i rpa in all circumstances. table 4 shows the optimal placement of sst and wind turbine with their location, respectively, as discussed in the case. 6.4. test case 4. sst position with one dg (pv) in this scenario, analyze the position of sst at one location with dg (pv). the grid reactive power qsstg is varied by changing the percentage of overrating with an increment of 10%. while running this case, simulations of bus 21 with 500kva capacity were obtained for the optimal placement of sst and pv. as shown in table 4. 6.5. test case 5. sst position with one bes in this scenario, analyze the position of sst at one location with bes. the grid reactive power qsstg is varied by changing the percentage of overrating with an increment of 10%. while running this case, simulations bus 21 with 500kva capacity obtained the optimal placement of sst and bes, as shown in table 3. fig. 9(a) shows that the active power consumption of the grid seldom shifts while examining the impact of grid rpa on the sst. so, the sst has reached the first step of its rpa capacity. reactive power demand decreases as λ rises, as shown in fig. 9(b). (a) (b) fig. 9 (a) real power demand (b) reactive power demand 144 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal table 3 optimal solutions of case 6. (λ = 20) using gorilla troop optimization sst power kva sst location no. of wt wt location no. of pv pv location no. of bes bes location f1 f2 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.426 1183.7 127 245 128 18 21 33 5 3 7 10 2 3 8 18 2 2 5 18 0.412 1186.9 127 245 128 18 21 33 7 1 11 9 1 2 9 20 3 1 6 21 0.401 1250.6 127 245 128 18 21 33 6 2 20 3 4 1 7 21 4 1 8 12 0.351 1296.0 127 245 128 18 21 33 4 4 6 15 6 2 8 20 1 3 2 20 0.252 1300.2 127 245 128 18 21 33 5 3 3 9 3 4 5 11 1 2 7 15 0.238 1419.9 127 245 128 18 21 33 6 2 8 9 1 2 9 12 5 1 6 12 0.189 1679.2 127 245 128 18 21 33 3 5 10 7 3 2 8 12 3 2 8 12 0.077 2281.3 127 245 128 18 21 33 7 1 3 15 5 2 6 18 1 3 2 20 0.070 2368.5 6.6. test case 6. sst position at three locations with two dg (wt, pv) and bes in this scenario, analyze the position of sst at three locations with (wt, pv) and bes. fig 10 (a) illustrates the optimal solution of gorilla troop optimization for case 6, while the stage-i overrating is increased 10%.by the optimization obtained by overrating 20% is illustrated in table 3. while running this case, simulations, bus 18, 21, 33 127,245, and 128 kva capacity were obtained for the optimal placement of sst and dg in different locations, and the objective function value significantly improved. the analysis is compared with each λ value as shown in fig. 10(b) and 10(c), and the comparison is illustrated in table 5. additionally, after the simulation of case 6, the reactive power demand is decreasing compared to other cases. (a) (b) (c) fig. 10 (a) λ = 20 (b) λ = 10 (c) λ = 0 uncertainty of the renewable energy accessing the distribution system for optimal voltage… 145 table 4 optimal placement of sst, dg, and bes in different test cases test case no. sst power kva sst location no. of wt wt location no. of pv pv location no. of bes bes location 2 127 245 128 18 21 33 3 500 21 9 26 4 500 21 3 27 5 500 21 9 19 similarly, power losses are also decreasing, as shown in figure 11 and figure 12, respectively. figure 13 illustrates the minimum voltage magnitude for each scenario, which can be used to check whether or not the voltage improvement objective described in (20) has been met. the most considerable voltage improvement was found in test case 6, which supported both active and reactive power. it is also determined that 1.0 p.u. represents the greatest significant magnitude of voltage for each circumstance.similarly, power losses are also decreasing, as shown in fig. 11 and fig. 12, respectively. fig. 13 illustrates the minimum voltage magnitude for each scenario, which can be used to check whether or not the voltage improvement objective described in eq. (20) has been met. the most considerable voltage improvement was found in test case 6, which supported both active and reactive power. it is also determined that 1.0 p.u. represents the greatest significant magnitude of voltage for each circumstance. to validate the results of gto the comparative analysis procedure is further carried on through the pso and ga optimization techniques in the same way as adopted in table 3 for the (λ=20) and table 6 shows comparison results. the results confirm the effectiveness of the case study carried out in this work. fig. 11 reactive power decrement after sst and dg placement of all the test cases fig. 12 actual power loss for each test case 146 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal fig. 13 the minimum voltage that can be applied is listed for each test case table 5 the optimal solution of case 6 for all the λ values method λ(%) sst power sst location no. wt wt location no. pv pv location no. bes bes location f1 f2 gto 20 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.426 1183.7 10 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.245 1386.9 0 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.184 1381.0 table 6 the comparison results of gto, ga, and pso method λ(%) sst power sst location no. wt wt location no. pv pv location no. bes bes location f1 f2 gto 20 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.426 1183.7 ga 20 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.397 1198.9 pso 20 127 245 128 18 21 33 6 2 8 9 1 2 9 12 1 3 2 20 0.395 1205.8 7. conclusion the exploration of multiple distributed generators (dgs), which include wind turbines and solar panels, along with battery energy storage (bes), is underway as promising options for providing dual reactive power support. these measures aim to reduce power losses and enhance voltage levels within radial distribution systems. the gorilla troop optimization algorithm has been instrumental in determining the optimal quantity of solidstate transformers (ssts), dg units, and bes installations. to make sense of the data, including load demand, solar irradiance, and wind speed, the k-medoid method is employed. six simulated scenarios have been utilized to investigate the impact of integrating ssts with uncertainty of the renewable energy accessing the distribution system for optimal voltage… 147 dg technologies such as wind turbines (wt), photovoltaics (pv), and bes within a radial distribution system. the integration of dg units, either individually or in conjunction with appropriately sized ssts, has led to reductions in power losses and improvements in voltage profiles. this study has successfully enhanced the voltage profile beyond the current configuration, achieving an 82.36% reduction in active power losses when optimized ssts with dual reactive power support and variable dg are considered, in contrast to the existing distribution system. additionally, reactive power losses have been decreased by 86.36%, and the voltage profile has significantly improved, rising from 0.92 p.u. to 1.0 p.u., indicating a higher value. reactive power consumption has been reduced by 71.19%. through the amalgamation of ssts and dg systems, this research introduces a novel approach to addressing long-standing challenges associated with high distribution system losses and low voltage levels. overcoming barriers such as high manufacturing costs, escalating losses, and equipment restrictions can be achieved. while transitioning from conventional distribution transformers (dts) to ssts requires a comparable timeframe, advancements in power electronics and semiconductors may help mitigate technological barriers. this technique has considerable promise for renewable energy integration, enhancements, and dnp areas, necessitating further research and analysis. future research will be investigated by use of the following equipment to analyze the losses and voltage profile enhancement in the distribution network planning in a power distribution system with auxiliary functions provided by sst. ▪ shunt capacitors banks ▪ unified power quality conditioner (upqc) ▪ a distribution static synchronous compensator (d-statcom). references [1] a. gantayet and d. k. dheer, "a data-driven approach to support voltage profiles & loss reduction in wind generator integrated active distribution network considering solid-state transformers with twofold reactive power compensation", energy sources, part a: recovery, utili. environ. eff., pp. 124, dec. 2021. [2] m. s. shaikh, s. raj, r. babu, s. kumar and k. sagrolikar, "a hybrid moth–flame algorithm with particle swarm optimization with application in power transmission and distribution", decis. anal. j., vol. 6, p. 100182, march 2023. [3] a. gantayet and d. k. dheer, "a probabilistic approach for reactive power compensation in an active distribution network with wind based renewable integration", in proceedings of the ieee international conference on emerging frontiers in electrical and electronic technologies (icefeet), 2020, pp. 1-6. [4] m. s. shaikh, s. raj, m. ikram and w. khan, "parameters estimation of ac transmission line by an improved moth flame optimization method", j. electr. syst. inf. technol., vol. 9, p. 25, dec. 2022. [5] m. h. hassan, s. kamel, m. s. shaikh, t. alquthami and a.g. hussien, "supply-demand optimizer for economic emission dispatch incorporating price penalty factor and variable load demand levels", iet gener. transm. distrib., vol. 17, pp. 3211-3231, june 2023. [6] m. s. alam, f. s. al-ismail, a. salem and m. a. abido, "high-level penetration of renewable energy sources into grid utility: challenges and solutions", ieee access, vol. 8, pp. 190277-190299, oct. 2020. [7] d. stanelyte and v. radziukynas, "review of voltage and reactive power control algorithms in electrical distribution networks", energies, vol. 13, p. 58, dec. 2019. [8] m. s. shaikh, c. hua, m. hassan, s. raj, m. a. jatoi and m. m. ansari, "optimal parameter estimation of overhead transmission line considering different bundle conductors with the uncertainty of load modeling", optim. control appl. methods, vol. 43, pp. 652-666, aug. 2021. [9] s. kumar, c. k. faizan ur rehman, s. a. shaikh and a. a sahito, "voltage improvement and power loss reduction through capacitors in utility network", in proceedings of the ieee international 148 s. k. guriro, m. s. shaikh, c. kumar, s. a. iqbal conference on computing, mathematics and engineering technologies: invent, innovate and integrate for socioeconomic development (icomet), 2018, pp. 1-5. [10] m. jiang, q. guo, h. sun and h. ge, "leverage reactive power ancillary service under high penetration of renewable energies: an incentive-compatible obligation-based market mechanism", ieee trans. power syst., vol. 37, pp. 2919-2933, nov. 2021. [11] s. rajamand, "loss cost reduction and power quality improvement with applying robust optimization algorithm for optimum energy storage system placement and capacitor bank allocation", int. j. energy res., vol. 44, pp. 11973-11984, sept. 2020. [12] i. molver and s. chowdhury, "alternative approaches for analysing the impact of distributed generation on shunt compensated radial medium voltage networks", comput. electr. eng., vol. 85, pp. 106676, july 2020. [13] x. liang and c. andalib-bin-karim, "harmonics and mitigation techniques through advanced control in grid-connected renewable energy sources: a review", ieee trans. ind. appl., vol. 54, pp. 3100-3111, april 2018. [14] a. h. elmetwaly, a. a. eldesouky and a. a. sallam, "an adaptive d-facts for power quality enhancement in an isolated microgrid", ieee access, vol. 8, pp. 57923-57942, march 2020. [15] f. h. gandoman, a. ahmadi, a. m. sharaf, p. siano, j. pou, b. hredzak and v. g. agelidis, "review of facts technologies and applications for power quality in smart grids with renewable energy systems", renew. sustain. energy rev., vol. 82, pp. 502-514, feb. 2018. [16] a. a. abdelsalam and a. m. sharaf, "a novel facts compensation scheme for power quality improvement in wind smart grid", in proceedings of the 25th ieee canadian conference on electrical and computer engineering: vision for a greener future (ccece), 2012, pp. 1-4. [17] p. jyotishi and p. deeparamchandani, "mitigate voltage sag/swell condition and power quality improvement in distribution line using d-statcom", j. eng. res. appl., vol. 3, pp. 667-674, 2013. [18] v. chaudhary, a. bhargava and s. verma, "power quality enhancement using unified power flow controller in grid connected hybrid pv/wind system", in proceedings of the ieee 4th international conference on communication and electronics systems (icces), 2019, pp. 2064-2069. [19] e. jamil, s. hameed, b. jamil and qurratulain, "power quality improvement of distribution system with photovoltaic and permanent magnet synchronous generator based renewable energy farm using static synchronous compensator", sustain. energy technol. assessments, vol. 35, pp. 98-116, oct. 2019. [20] b. ismail, n. i. abdul wahab, m. l. othman, m. radzi, k. n. vijyakumar and m. n. mat naain, "a comprehensive review on optimal location and sizing of reactive power compensation using hybrid-based approaches for power loss reduction, voltage stability improvement, voltage profile enhancement and loadability enhancement", ieee access, vol. 8, pp. 222733-222765, dec. 2020. [21] o. d. montoya and w. gil-gonzález, "dynamic аctive and reactive power compensation in distribution networks with batteries: a day-ahead economic dispatch approach", comput. electr. eng., vol. 85, p. 106710, july 2020. [22] m. azeroual, t. lamhamdi, h. el. moussaoui and h. el. markhi, "intelligent energy management system of a smart microgrid using multiagent systems", arch. electr. eng., vol. 69, pp. 23-38, 2020. [23] k. m. rafi and p. v. n. prasad, "comparison of control algorithms for power factor correction in a distribution system using dstatcom", in proceedings of the ieee international conference on power, control, signals and instrumentation engineering (icpcsi), 2017, pp. 1736-1741. [24] h. lotfi, m. samadi and a. dadpour, "optimal capacitor placement and sizing in radial distribution system using an improved particle swarm optimization algorithm", in proceedings of the ieee 21st electrical power distribution network conference (epdc) 2016, pp. 147-152. [25] a. s. hassan, y. sun and z. wang, "multi-objective for optimal placement and sizing dg units in reducing loss of power and enhancing voltage profile using bpso-slfa", energy reports, vol. 6, pp. 1581-1589, nov. 2020. [26] t. t. nguyen, b. h. dinh, t. d. pham and t. t. nguyen, "active power loss reduction for radial distribution systems by placing capacitors and pv systems with geography location constraints", sustainability, vol. 12, p. 7806, september 2020. [27] a. n. hussain, w. k. shakir al-jubori and h. f. kadom, "hybrid design of optimal capacitor placement and reconfiguration for performance improvement in a radial distribution system", j. eng., vol. 2019, p,1696347, dec. 2019. [28] o. eo, a. to, o. ik and a. i. oo, "optimal sitting and sizing of shunt capacitor for real power loss reduction on radial distribution system using firefly algorithm: a case study of nigerian system", energy sources, part a: recovery, util. environ. eff., vol. 45, pp. 5776-5788, oct. 2019. [29] m. s. shaikh, c. hua, s. raj, s. kumar, m. hassan, m. m. ansari and m. a. jatoi, "optimal parameter estimation of 1-phase and 3-phase transmission line for various bundle conductor’s using modified whale optimization algorithm", int. j. electr. power energy syst., vol. 138, p. 107893, june 2022. uncertainty of the renewable energy accessing the distribution system for optimal voltage… 149 [30] m. s. shaikh, c. hua, m. a. jatoi, m. m. ansari and a. a. qader, "application of grey wolf optimisation algorithm in parameter calculation of overhead transmission line system", iet sci. meas. technol., vol. 15, pp. 218-231, feb. 2021. [31] s. g. shekarappa, s. mahapatra and s. raj, "voltage constrained reactive power planning problem for reactive loading variation using hybrid harris hawk particle swarm optimizer", electr. power compon. syst., vol. 49, pp. 421-435, sept. 2021. [32] c. k. shiva, s. s. gudadappanavar, b. vedik, r. babu, s. raj and b. bhattacharyya, "fuzzy-based shunt var source placement and sizing by oppositional crow search algorithm", j. control autom. electr. syst., vol. 33, pp. 1576-1591, feb. 2022. [33] m. s. shaikh, c. hua, m. a. jatoi, m. m. ansari and a. a. qader, "parameter estimation of ac transmission line considering different bundle conductors using flux linkage technique", ieee can. j. electr. comput. eng., vol. 44, pp. 313-320, june 2021. [34] i. syed, v. khadkikar and h. h. zeineldin, "loss reduction in radial distribution networks using a solid-state transformer", ieee trans. ind. appl., vol. 54, pp. 5474-5482, may 2018. [35] d. k. mishra, m. j. ghadi, l. li, m. j. hossain, j. zhang, p. k.ray and a. mohanty, "a review on solid-state transformer: a breakthrough technology for future smart distribution grids", int. j. electr. power energy syst., vol. 133, p. 107255, dec. 2021. [36] d. shah and m. l. crow, "online volt-var control for distribution systems with solid-state transformers", ieee trans. power deliv., vol. 31, pp. 343-350, july 2015. [37] x. gao, f. sossan, k. christakou, m. paolone and m. liserre, "concurrent voltage control and dispatch of active distribution networks by means of smart transformer and storage", ieee trans. ind. electron., vol. 65, pp. 6657-6666, nov. 2017. [38] m. t. a. khan, a. a. milani, a. chakrabortty and i. husain, "dynamic modeling and feasibility analysis of a solid-state transformer-based power distribution system", ieee trans. ind. appl., vol. 54, pp. 551-562, sept. 2017. [39] g. guerra and j. a. martinez-velasco, "a solid state transformer model for power flow calculations", int. j. electr. power energy syst., vol. 89, pp. 40-51, july 2017. [40] i. syed, v. khadkikar and h. h. zeineldin, "loss reduction in radial distribution networks using a solid-state transformer", ieee trans. ind. appl., vol. 54, pp. 5474-5482, may 2018. [41] d. e. goldberg and j. h. holland, "genetic algorithms and machine learning", machine learning, vol. 3, pp. 95-99, 1988. [42] j. kennedy and r. eberhart, "particle swarm optimization", in proceedings of the ieee icnn'95international conference on neural networks, 1995, pp. 1942-1948. [43] a. clifton, b. m. hodge, c. draxl, j. badger and a. habte, "wind and solar resource data sets", wiley interdiscip. rev. energy environ., vol. 7, p. e276, dec. 2017. [44] s. barik and d. das, "determining the sizes of renewable dgs considering seasonal variation of generation and load and their impact on system load growth", iet renewable power generation, vol. 12, pp. 1101-1110, june 2018. [45] k. m. kalantari and a. askarzadeh, "optimal mv/lv transformer allocation in distribution network for power losses reduction and cost minimization: a new multi-objective framework", int. trans. electr. energy syst., vol. 30, p. e12361, feb. 2020. [46] j. e. huber and j. w. kolar, "volume/weight/cost comparison of a 1mva 10 kv/400 v solid-state against a conventional low-frequency distribution transformer", in proceedings of the ieee energy conversion congress and exposition (ecce), 2014, pp. 4545-4552. [47] j. h. teng, "a direct approach for distribution system load flow solutions", ieee trans. power delivery, vol. 18, pp. 882-887, july 2003. [48] h. s. park and c. h. jun, "a simple and fast algorithm for k-medoids clustering", expert syst. appl., vol. 36, pp. 3336-3341, march 2009. [49] m. s. shaikh, s. raj, s. abdul latif, w. f. mbasso and s. kamel, "optimizing transmission line parameter estimation with hybrid evolutionary techniques", iet gener. transm. distrib., vol. 18, pp. 1795-814, april 2024. [50] b. abdollahzadeh, g. f. soleimanian and s. mirjalili, "artificial gorilla troops optimizer: a new nature-inspired metaheuristic algorithm for global optimization problems", int. j. intell. syst., vol. 36, pp. 5887-5958, july 2021. [51] k. r. guerriche and t. bouktir, "maximum loading point in distribution system with renewable resources penetration", in proceedings of the ieee international renewable and sustainable energy conference (irsec), 2014, pp. 481-486. instruction facta universitatis series: electronics and energetics vol. 30, no 3, september 2017, pp. 403 416 doi: 10.2298/fuee1703403p analasys of two low-cost and robust methods for indoor localisation of mobile robots * miloš petković, vladimir sibinović, dragiša popović, vladimir mitić, darko todorović, goran s. đorđević university of niš, faculty of electronic engineering, niš, serbia abstract. this paper presents two simple and cost effective indoor localisation methods. the first method uses ceiling-mounted wide-view angle webcam, computer vision and coloured circular markers, placed on the top of a robot. main drawbacks of this method are lens distortion and sensitivity to lighting conditions. after solving these problems, a high localisation accuracy of ±1cm is achieved at about 5 hz sampling rate. the second method is a version of trilateration, based on ultrasound time of flight distance measurement. an ultrasonic beacon is placed on a robot while wall detectors are strategically placed to avoid an excessive occlusion. the zigbee network is used for inter-device synchronisation and for broadcasting measured data. robot location is determined as a solution to the minimisation of measurement errors. using nelder-mead algorithm and low-cost distance measuring devices, a solid sub 5 cm localisation accuracy is achieved at 10hz. key words: robot localization, nelder-mead, gnu scientific library, usb camera, opencv 1. introduction the robot or objects indoor localisation is a vital research area, intrinsically important in expanding competences of future low-cost home robots. a comprehensive research overview is best gained by browsing applications in microsoft’s indoor localisation competition, held three years in a row [2], starting with 2014. the best scores are often achieved through engagement of expensive components such as lidar’s. however, when it comes to a low-cost mobile robot, it is demanded that localisation is both reliable and inexpensive. consequently, a compromise is reduced to the ratio of positioning accuracy and the costs of producing and implementing localisation. this is not difficult to received october 7, 2016; received in revised form december 15, 2016 corresponding author: miloš petković faculty of electronic engineering, university of niš, serbia, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: milos.petkovic@elfak.ni.ac.rs) * an earlier version of this paper received best section paper award at electronics section at 3rd international conference on electrical, electronic and computing engineering icetran 2016, zlatibor, serbia, 13-16 june, 2016 [1] 404 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević achieve for service robots. for example, home cleaning robots do not require high precision localisation for wandering. however, if servicing an arbitrary point in workspace is required, a comprehensive research would be needed in order to stay below the price tag. furthermore, the indoor localisation is especially challenging [3] due to a problem with weak or non-existing gps signal, and due to occlusion problems as a result of variety of objects and their placement within a room. thus, usage of any method that needs a straight line visibility between two parts would require a redundant solution. on the other hand, such increasing of complexity leads to the increase of the overall costs. therefore, a careful consideration has to be made before choosing the right method. the localisation is based on a low-cost, ultrasonic, time-of-flight, distance measuring system. it is similar to cricket [4, 5]. the robot emits an ultrasonic beacon signal, while fixed wall-mount devices measure time-of-flight. this kind of system is often inexpensive, so increasing redundancy by adding more of wall devices is not increasing the overall system cost considerably. use of straightforward trilateration imposes few problems. the first one appears when, due to a measurement error, three or more spheres do not intersect at a single point. for smaller measurement errors this could be neglected and considered as a rounding error. since our system had better than ± 10cm accuracy, this could not be the case. the other problem, a special case of the first one, is absence of intersection between spheres in case of negative errors. mathematically speaking, a solution of trilateration is imaginary. arguably, accuracy could be improved by calibrating each wall unit separately, and ensuring their precise coordinates. however, in cases of occlusion and reflections, these kinds of problems would reappear. therefore, we seek a solution through a criterion-based optimisation to get as close as possible to the point that minimises the measurement error. further improvement could be achieved by using a secondary, more accurate, localisation system. when these two systems run in parallel, the second system would be a good reference for the calibration of the initial one. for this purpose, localisation rate does not even need to be high. therefore, we decided to base the secondary system on computer vision and recognition of passive markers. low-cost requirement was priority as well, so overcoming typical drawbacks of such an image processing methods was important. fisheye lens distortion was removed by using known geometry [6], and complexity of object recognition was avoided by simplification and colour coding of markers [7]. the rest of them will be presented in details in the following section. 2. visual feedback mapping for localisation 2.1. materials and method we have placed a fish-eye webcam on the ceiling in the middle of the test room. in order to make this system affordable, we based it on a full hd webcam, genius f100, with 120° view angle lens, and moderate power pc of amd athlon ii x3 455 3.30ghz, ati radeon hd 6450 and 4gb ddr3 ram. the distance between the camera lens and the floor is 3.1 metres therefore, the camera with 120° wide view angle lens can cover the area of 4×3 m. a grid of 0.5 × 0.5 m was drawn on the floor to ease calibration and provide a visual clue during the measuring. the grid is highly accurate, with only 5 mm distortion error over the diagonals of 5 m. analasys of two low-cost and robust methods for indoor localisation of mobile robots 405 rectification was crucial for this system because a wide-angle lens that is used has intrinsic distortion. its removal is easy since the camera itself is stationary and marker height was supposed to be constant. sampling images of the marker at different positions reveals levels of distortion. this data is then used to invert the effects. we gathered those samples at drawn greed points. as an aid we used a tripod, and as a marker we used an orange ball, as shown in fig. 1. height of this customized calibration tool was set to 1.1 m which reduced the distance between the camera lens and the markers to exactly 2 m. after relocating the tripod around the grid, and overlaying all images one on top of the other, we generated fig. 1. the central part of the grid, which aligns with the middle of the camera, is free from the lens distortion. that is why we dropped out some middle points but left one on the edges and corners, where the distortion is at its largest. fig. 1 overlay of tripod with marker as calibration points in our test room. we found it fitting to divide the frame to 9 regions and linearize them independently. this keeps rectification simple and calibration easy. number of pixels between sampled points was manually counted and converted to centimetres. later on, calibration constants and offsets for each region were calculated, and embedded in the positioning algorithm. distortional displacement within the camera image is not the same for close and distant objects. obviously, an additional calibration is required if height of the marker is changed. however, there is no need for this if its placement is optimal. the best place for the marker is on the top of the tracked object, where chances for occlusion are negligible. we should note that markers placed higher do require more linearization sectors, as the difference between the real position of the object on the floor and the camera frame varies. an important part of the simplification of the marker recognition is its colour coding. this makes identification easy. in addition, extracted marker shape is more accurate, which enhances precision in marker centre calculation. we implemented this extraction through pixels classification. the classification of pixels generates a black and white image, where white pixels are originally in adjacent colour space of the marker. this new image contains slightly etched shapes of markers with some artefacts as well. another layer of smoothing filter corrects this. we suggest gaussian blur, as it produced quite useful results for us. larger artefacts, if they happen to persist, are filtered out by shape and size classification. we opted for a circular marker design. 406 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević marker colour distinction also enables multi object tracking, or orientation recognition by engaging two markers per object. in particular we used the larger, orange coloured, marker for tracking position, while the smaller one which was green, was an aid in tracking robot heading. this marker combination proved to be the most desirable with respect to the program execution time. after marker positions in pixels are extracted, in our case after the centre of the only remaining circle is calculated, its conversion to absolute position in centimetres comes in place, by using formula (1) and calibration constants. 1 2 calib mp os mpc os c        (1) mp is the marker position in pixels while os1 is the marker offset in pixels for the region it belongs to. ccalib and os2 are linearity gain and offset in centimetres for the region. their values, for all nine calibration regions, are given in table 1. finally, mpc is marker position in centimetres, in coordinate system which centre is placed at the bottom left calibration point of fig. 1. table 1 calibration constants and offsets for conversion into cm marker osition os1 ccalib os2 x y x y x y upper left 285 28 3.44 3.64 0 0 centre left 285 28 3.44 3.43 0 0 lower left 285 900 3.36 3.23 0 250 upper middle 620 20 2.29 2.26 100 0 centre 620 200 3.5 3.5 100 50 lower middle 620 1319 3.6 3.6 50 0 upper right 1319 28 3.44 3.43 300 0 centre right 1319 28 3.44 3.43 300 0 lower right 285 900 3.36 3.23 0 250 2.2. implementation and results the program was done under window 10 with microsoft visual studio community 2015 with inclusion of opencv library version 3.0. at the start up of the program, camera parameters, such as brightness, contrast, saturation, hue, gamma, sharpness and exposure, are pre-set to suitable values. this parameters tweaking enhances proper pixel colour classification at given lighting conditions. we experimentally determined them for our neon light test room, with west facing windows. prior to the pixel classification, the image is converted from rgb intohsv. after this, the inrange function is used, as classifier, to generate black and white image. as already stated, we used gaussianblur for bw image smoothing and smaller artefacts removal. in the next step we calculate the marker position by data extraction. we used simpleblobdetector in this process. parameters of this function are set to ignore everything but circles of particular size, thus filtering any larger artefacts. it is the middle point of a found blob, that is considered as the marker position, pixel-wise. analasys of two low-cost and robust methods for indoor localisation of mobile robots 407 to speed up the program we decided to trim sampled frames only to region-of-interests (roi). this way, computationally intensive functions like simpleblobdetection shall execute faster. during the initialisation phase, the program searches the whole frame for marker, until it is found. afterwards, the roi is extracted from frames based on previous marker position and the maximum expected movement. this roi trimming not only shortens calculation time but also filters out other objects of similar visual properties as the marker’s. precaution that needs to be taken into account is that these kinds of objects are not present during the start of the program. in such cases it could happen that some other object is recognised for tracking, instead of the marker, and then the wrong roi would be extracted. in the last step, marker position in pixels is converted into actual position in centimetres, in absolute coordinate frame attached to the floor. approximately, one centimetre corresponds to 2.5 pixels. initial verification of the system includes repetitive measurements with the marker, placed on a tripod, at an arbitrary point in workspace. this tests calibration accuracy and system repeatability. upon consecutive large number of measurements, we can confirm that the system is reliable and repeatable at the acceptable level. the number of 1572 location samples of a still marker was acquired. on average, it required 235 ms to complete one localisation cycle. with 4.26 hz localisation rate, such system is not suitable for localising high speed mobile platforms. nevertheless, a robot that travels at comfortable speed of 0.3 m/s would be localised at points 7 cm apart. this can be considered acceptable in applications such as fetching objects to the customer or telepresence, but not in precise object handling. repeatability for all 1572 measurements was within one-centimetre range which corresponds to 2 to 3 pixels of the camera. due to small variations in lighting and inherent camera noise, there exists a jitter in marker position, found by a simple blob detector. when position in pixels is converted into position in centimetres, and rounded, the jitter passes to marker position in centimetres. an improvement is possible with the increase of camera resolution, or perhaps with the increase of the number of linearization sections. however, we find this system static performance quite satisfactory for calibration and support of low-cost, ultrasound based, time-of-flight localisation system. for the dynamic testing of camera localisation system, we have decided to make several circular motions in the centre of the test room. there are two reasons for this. the first is simplicity of trajectory equations, which allows easier data analysis later on. the second is trajectory length that should provide sufficient time for acquisition of a sufficient amount of data. since the test room was not large enough for straight line movements, the most logical trajectory then was circular. also, it can be easily performed without the need for an expensive setup. for example, a simple remotely driven mobile platform, like more powerful homemade rc car, suffices. another proposal is a motor driven rotating stand. at our disposal was a small, student grade, robotic platform. after attaching the marker to it, we have initiated the localisation and made 30 laps, with approximately constant speed of 20 cm/s. the programme was set to log the marker positions with the time stamps of frame acquisitions. the time stamps are expressed in milliseconds and the local time is measured from the beginning of the test. fig. 2. shows plotted positions of the marker. as it can be noted, the trajectory is circular but there exists some slight movement of the centre. 408 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević fig. 2 logged trajectory of circular motion of marker. number of repetitive cycles is 30. in the next step, we have done a time stamp analysis of about 426 s long measurement streak. this was necessary for the later analysis of trajectory. the logged time seemed rather linear when plotted. an average time between processed frames is 236 ms, with standard deviation of 22.9 ms. differences on the histogram of time between two successively grabbed frames are an interesting observation, which is shown in fig. 3. fig. 3 histogram of time differences, dt, between two successively grabbed frames. histogram peaks are at an equal distance of approx. 15 ms. since the camera streams at about 30 fps, this 15 ms seems like a half of a frame time. an average period of 236 ms is then correlated to 7 frames. considering a slight variance in stream frame rate and code execution, it could lead to a frame grabbing jitter. the jitter would be only one frame. its effect would be increase in localisation uncertainty of one frame time multiplied by the speed of marker. if speed is low, uncertainty increase is only a few centimetres. in our case, for speed of just under 20cm/s, it is evaluated to 0.6cm. when time stamps are analasys of two low-cost and robust methods for indoor localisation of mobile robots 409 converted to integer number of frames from the beginning of test, and time difference is recalculated, the histogram looks like in fig. 4. now it is much clearer that almost half of the samples are taken with 7 frame difference. from the remaining samples, about one third is with 6 frame difference and one third with 8 frame difference. in other words, standard deviation is 0.77 frames. to conclude, as far as the timing analysis is concerned, since no real time os were used, a variance in processing frames and sampling does exist. however, it is not more than 10 frames or one third of a second. fig 4 histogram of time stamp differences, when time is converted to frames with 30fps rate. in parallel with the dynamic performance test we have done an additional timing analysis. we wondered whether this kind of localisation system could be integrated as small localisation device capable of broadcasting tracked object location via wi-fi. thus, the image processing pc was set to send position via udp packets to pc within the same wireless network. comparing the time difference of localisation frame sampling time and time of the udp arrival, we got 236 ms of time difference between location information. on the other hand, a standard deviation is now 133 ms, which is almost 6 times more than for the localisation alone. the main culprit is packet buffering, and wireless signal quality. due to them, considerate number of packets was late. note also that this differential analysis excludes fixed amount of latency from wi-fi, as it did with camera frame grabbing. since we are using low-cost off the shelf components, it is not possible to determine accurately this kind of delays. at least not without the use of special setups. conversely, we find sending location via udp packets and wi-fi for control purposes plausible, however, control algorithms must either be rugged enough for variable time delays or take advantage of frame time stamp and perform small corrections of received location. in the following step, we have done trajectory analysis in two stages. firstly, we have found trajectory radius r and centre (x0, y0), as well as speed of centre movement (vx, vy). this was achieved by finding the best fit for function (2). 410 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević 2 2 0 0( , , ) ( ) ( )x yf x y t r x v t x y v t y       (2) basically, function (2) represents difference in radius of acquired location and the estimated one. for any measured point it should be equal to zero. the best fit result gave r of 41.9 cm, (x0, y0) of (191.1, 149.6) cm, as well as (vx, vy) of (0.264, -0.096) mm/s. the best fit average error is 6e-16, while the standard deviation is 0.633cm. it is interesting to note that the standard deviation is on the level of mentioned frame jitter, for an object with speed of 20 cm/s. nevertheless, we state that accuracy of this system for moderate speed of tracked marker is ±1.5cm, or ±2.25cm if absolute limits are applied. so performance of system for tracking a moving object does not go far off from the static measurements. now, if we take into consideration that speed of the marker was constant, we can assume that coordinates (x, y) change as in (3), where ω is constant angular velocity and ϕ is initial angular offset. the formula (3) is our ideal mathematical model of real trajectory. 0 0( ( ), ( )) ( cos( ), sin( ))x yx t y t x v t r t y v t r t          (3) difference of trajectory given with the formula (3) and measured data is given with function (4). ideally, it equals zero. 2 2 0 0( , , ) ( cos( ) ) ( sin( ) )x yg x y t x v t r t x y v t r t y             (4) the best fit result gives angular velocity of -0.439 rad/s, which translates to 18.4 cm/s peripheral speed, and angular offset of 3.163 rad. negative velocity comes from the clockwise direction of trajectory. average fitting error is 2.8 cm and standard deviation is 1.8 cm. since this result seems much worse than the one from trajectory path analysis, we conclude that this method is accurate for localisation within a frame. however, when a tracked object is moving, due to unsynchronised frame grabbing, larger margin of error occurs. indeed, when we calculated travelled distances between successive sampled frames, we got 4.4 cm in average and standard deviation of 0.5 cm. this seems like a great variance, considering the fact that marker speed was pretty constant. after calculating temporal velocities, we got the result that average speed is 18.6 cm/s and standard deviation is 0.6 cm/s. so generally, due to variance in precise image capturing, we get very rough velocity approximation based only on two samples. however, after filtering, this information seems quite right. 3. time-of-flight localisation method 3.1. materials and method a simplified block diagram of time-of-flight distance measurement system is presented in fig. 5. there is a beacon that emits ultrasound on the left and a wall mount device on the right. the minimum number of wall devices necessary for successful trilateration is three. before the beacon fires a streak of waves, it notifies a wall device via radio module, and it starts the counter. when the wall device detects emitted sound, it stops the counter. information about time of flight is then sent via radio. distance is calculated after the time analasys of two low-cost and robust methods for indoor localisation of mobile robots 411 of flight is multiplied by the speed of sound. since the device is for indoor use only, speed changes due to temperature variations are neglected. multiple ultrasonic transducers are used in both devices. beacon covers 360 degrees horizontally and about 45 degrees vertically. the wall device covers about 140 degrees horizontally and 45 degrees vertically. therefore, a proper redundancy is needed for specific coverage. currently we use 4 wall devices placed in corners of a rectangle, with an orientation toward common centre. we made sure to do the measurements only in areas covered with more than 3 wall units. although devices are low-cost to make, this is only an initial accuracy testing and we find it irrelevant to have coverage of any preferred size or shape. fig. 5 simplified block diagram of system: ultrasound emitting beacon on the left and time-of-flight measuring wall mount device on the right. in order to overcome the problem of trilateration when using low-accuracy, but also low-cost, distance measuring system, we have based solution calculation through minimisation of the sum of squares of measurement errors. in the minimisation function ,)( 1 2    n i iri dppf (5) n represents number of wall devices that responded to ultrasonic beacon. position vector of beacon pr and position vectors of wall devices pi are defined in 3d and in regard to some ground reference point. again, vectors pi, where i is from 1 to n, are known, as they are measured during localisation system installation. the x and y axes are in the plane of the floor while the z axis is oriented toward the ceiling. measured distances di are obtained short after the beacon signal is emitted. the function minimum is located around the beacon’s position. this function is equal to zero when no measuring error is present. otherwise, a small precision uncertainty will occur in the case of measurement errors. when measured data noise is of random nature, there is no possibility to narrow down solution search area, at least not statically. 412 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević in order to test this method, we have created a wolfram mathematica script. it simulates a system of 3 or 4 wall devices and a beacon. distance measuring error is randomly generated and added to the precise value. we set the x and y plane to correspond to the floor and the z axis to point to the ceiling. although this method allows finding position of beacon in 3d, we are more interested in keeping its height constant. this would be most probable use-case in mobile robotics. therefore the script visualises 2d plane of the z axes at the fixed height of beacon of 1.3 m, as in fig. 6. possible beacon positions in that plane are circles, designated with thick circular arcs in fig. 6. note that both positive and negative measurement errors were introduced. the dot represents calculated position, while the short lines, that connect it to the arcs, are estimated measurement errors. the squares represent projection of wall devices on the plane. they are also centres of the circles. the lower left part contains magnified detail around the dot. fig. 6 a plane, where the z coordinate is constant 1.3 m, that contains calculated robot position which is shown with a dot. possible beacon positions, for that plane, according to the measured data are circles, are shown partially with thick arcs. the short lines represent estimated measurement error. the squares represent projection of wall devices on the plane. they are also centres of the circles. the zoomed detail around solution point is presented at the bottom left. visual checks were only used as an aid, for better understanding of behaviour of solution in response to errors and device placement. for example, actual and calculated positions are identical when there is no measurement error. equal errors in all wall devices tend to cancel each other. numeric evaluation is done as well. we used nminimize function for minimization. available minimisation methods are nelder-mead [8], differential evolution [9], simulated annealing [10] and random search [11]. we used them all simultaneously in order to compare them with respect to efficiency and accuracy. wall devices were placed in rectangular pattern with same height, as they might be used commonly. we generated random beacon positions, calculated accurate distances to wall devices, and then added a gaussian error in range of ±10 cm. beacon analasys of two low-cost and robust methods for indoor localisation of mobile robots 413 location found by minimisation of function (5) was accurate enough, mostly bellow 5 cm error. however, in some cases, the error went up to extremes of almost 20 cm. that occurs in situation when two adjacent wall devices have maximal error of +10 cm while the opposite two have –10 cm of error. probability for this is rather low and general conclusion is that this method works quite nicely. it shows robustness to both positive and negative measurement errors. solution exists independently from the number of wall devices. increasing their number to overcome temporary occlusion problems does not affect solution calculation, neither in complexity nor in time. comparison of results of four minimisation methods showed no significant difference between them. difference in accuracy was well below 1 cm. the same could be said about efficiency. so we chose the nelder-mead for practical implementation. 3.2. implementation and results after successful method of validation in wolfram mathematica, we have built c++ code. we have chosen to use nelder-mead solver from the gnu scientific library. the program was used on the minnowboard computer with non-commercial ubuntu os. the minnowboard is an open-source, 64-bit intel® atom™ based mini/embedded pc. initial tests were done with pre calculated examples, generated with mathematica script. execution time was about 1 ms, in average. though sometimes it reached 3ms however, this was not the only program running. nevertheless, we find this quite satisfactory. for service type robot speed, this introduces a localisation error less than one millimetre. delays in distance measuring system are much greater and position sampling is below 10hz. if by any chance execution time has to be reduced it could be done by lowering solver precision. we noticed that in most cases 10 to 20 iterations were enough to get the right position of centimetre resolution. as in the visual feedback localisation in section 2, we initially verified the system, through repetitive measurement with beacon fixed at arbitrary position in the workspace. this verification helps understanding repeatability in measurement and also gives reasonable confidence in usability for further implementation on a mobile robot. upon consecutive large number of measurements, we can confirm that the system is reliable and repeatable at an acceptable level. the beacon firing rate was fixed, with the period of 150 ms, which is frequency of 6.67 hz. although we could set it up to 10hz, we did not want to use it at its limits. a number of 1172 measurements at fixed position is presented as histogram in fig. 7. the average point is (213cm, 169cm) and standard deviation is 0.62, or 0.38 for x axis data and 0.49 for y axis data. in general, only 0.26%, or 3 points, is outside of ± 1.5cm accuracy region. these data show a satisfactory initial accuracy of the method. although it returns a bit more scattered location than the camera based method, it works faster. for dynamic testing of ultrasonic based localisation system, we have done the same test as with camera based localisation system. furthermore, we decided to do both tests in parallel. this would make the comparative analysis easier. so the ultrasonic beacon was placed on the same platform as the marker. since the platform, which was in the centre of the test room, was making circular motions, both the marker and the beacon had the same centre of rotation. since the beacon must not occlude the marker it was placed as close as possible to it. nevertheless, there still existed a slight difference of almost 3 cm, in their radiuses. the 414 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević initial trajectory analysis confirmed a slightly lower localisation accuracy of this system compared to the camera based one. therefore, we decided to use the centre of rotation (x0, y0) calculated from the camera based system trajectory analysis, as well as speed values (vx, vy), and repeat fitting process with (2). the best result gave r of 44.8 cm, an average error of -3e-14, and a standard deviation of 7.44 cm. this result looks a lot higher than the one for the static test. this stems from the poor choice of rf modules for the system. these are low power zigbee modules. several studies indicate low performance of zigbee communication in presence of wi-fi signals. this is nicely summarised in [12]. there it is clearly stated that wi-fi signal can corrupt zigbee signal on bit level or cause drastic increase in retransmission. since our setup room had one wi-fi router and there were plenty more distributed in nearby offices, we have noticed both effects. when we analysed time of arrival of packets from single wall device we discovered that latency between packets is quite drastic. instead of having packets at regular beacon firing intervals of 150 ms, plus or minus time of flight of ultrasound up to 5 m, there were packet buffering where packets came with less than 30 ms difference. since packets with distance information were not time stamped at transmitter side, it was impossible to determine whether the wall device failed to transmit after one beacon firing or the measured distance information came after the following beacon firing. in such cases mixing of data occurred. it could be otherwise interpreted like higher inaccuracy in distance measurement, which leads to higher localisation error. at some rare moments, packets from unknown wall unit address were received, which we interpret like obvious pollution of data. it is quite possible that lower performance of zigbee modules is even due to its quality, since they were one of the cheapest on the market. fig. 7 histogram of 1172 measurements at single beacon pint. most often measured position is (213, 169) cm. analasys of two low-cost and robust methods for indoor localisation of mobile robots 415 problems associated with zigbee modules could perhaps be overcome by using better and more reliable modules, and by implementation of some better protocol for sending data over zigbee as suggested in [12]. another solution could be using modules that avoid overcrowded 2.4 ghz region at all. since we had already identified the problematic latency in our system, we skipped the second part of trajectory accuracy analysis that we did with the camera based system. simply, it would not add any value to the results. 4. conclusion we have implemented two methods for indoor localisation, and tested them against each other under identical conditions in our testing facility. after initial static testing and validation of systems accuracy, with laser range finder, we have determined that the first method, the camera-based one, has better accuracy. although it has half of localisation speed than the time-of-flight method, we have decided to use it as referent system during dynamic testing. since mobile service robots have moderate speeds, then the localisation rate of visually based system is quite adequate. dynamic test showed that ultrasonic based localisation system has lower accuracy and success rate of measurement, due to zigbee modules communication glitches that require additional attention and improvements. on the other hand, the first method has its own pitfalls. it is, foremost, sensitivity to changes in lighting condition. it also requires a comprehensive calibration which should be automated in order to make it an off-the-shelf localisation solution. the standard pc could be easily replaced with embedded type pc, for example, with any of newer raspberry pi series. nevertheless, both systems showed simplicity in setting up and use. their low implementation cost makes them affordable for use in education and some less demanding real life applications, such as service robots. in conclusion, camera-based system is better for laboratory conditions due to its high accuracy. the other system, although less accurate, is more suitable for a variety of other locations. references [1] m. petković, v. sibinović, d. popović, v. mitić, d. todorović and g. s. đorđević, “robust indoor localisation methods of mobile robots: direct visual feedback and time-of-flight trilateration”, in proceedings of the 3rd international conference on electrical, electronic and computing engineering (icetran 2016), zlatibor, serbia, june 13 – 16, 2016, eli2.6 1-6. [2] "microsoft indoor localisation competition". research.microsoft.com. n.p., 2016. web. 15 apr. 2016. [3] j. borenstein, et al, “mobile robot positioning sensors and techniques”, invited paper for the journal of robotic systems, special issue on mobile robots, vol. 14, no. 4, pp. 231 – 249, 1996. [4] "the cricket indoor location system: an nms project". cricket.csail.mit.edu. n.p., 2016. web. 15 apr. 2016. [5] n. b. priyantha, a. chakraborty and h. balakrishnan, “the cricket location-support system”, in proceedings of the 6th acm mobicom, boston, ma, august 2000. [6] c. hughes, et al., “wide-angle camera technology for automotive applications: a review”, iet intelligent transport systems, vol. 3, no. 1, pp. 19-31, 2009. [7] z. garofalaki, et al, “object motion tracking based on color detection for android devices”, international journal of computer, electrical, automation, control and information engineering, vol. 9, no. 4, pp. 970-973, 2015. 416 m. petković, v. sibinović, d. popović, v. mitić, d. todorović, g. s. đorđević [8] j. a. nelder and r. mead, “a simplex method for function minimization”, computer journal, no. 7, pp. 308–313, 1965. [9] r. storn and k. price, “differential evolution a simple and efficient heuristic for global optimization over continuous spaces”, journal of global optimization, no. 11, pp. 341–359, 1997. [10] s. kirkpatrick, c. d. gelatt jr and m. p. vecchi, “optimization by simulated annealing”, science, vol. 220, no. 4598, pp. 671–680, 1983. [11] l. a. rastrigin, “the convergence of the random search method in the extremal control of a many parameter system”, automation and remote control, vol. 24, no. 10, pp. 1337–1342, 1963. [12] c. m. liang, n. b. priyantha, j. liu and a. terzis “surviving wi-fi interference in low power zigbee networks”, in proceedings of the 8th acm conference on embedded networked sensor systems, acm ny, 2010, pp. 309-322. facta universitatis series: electronics and energetics vol. 33, no 3, september 2020, pp. 477-487 https://doi.org/10.2298/fuee2003477a © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell  sobhan abbasian 1,2 , reza sabbaghi-nadooshan 1 1electrical engineering department, islamic azad university, central tehran branch, tehran, iran 2alborz electricity distribution company, karaj, iran abstract. in this work, a gaas-based quantum well solar cell with a 25-layer inas/gaas intermediate layer is simulated in silvaco atlas tcad software. in order to reduce the recombination caused by the presence of the quantum layers and increase the absorption of photons, electron blocking layers (ebls) and hole blocking layers (hbls) have been added to the solar cell in an in0.5(al0.7ga0.3)0.5p semiconductor. the results show that the efficiency of the proposed solar cell increases 17.38% by obtaining impurity the thickness and doping of the ebl and hbl layers. it can be concluded that the use of the in0.5(al0.7ga 0.3)0.5p semiconductor with ebl and hbl layers decreases the open circuit voltage (voc) caused in the quantum wells. the efficiency of the proposed solar cell with ebl and hbl layers was found to be 44.65%. key words: electron-blocking layers, hole-blocking layers, inas/gaas, quantumwell solar cell 1. introduction the increasing human need for energy has drawn the attention of many researchers to renewable energy. solar cells are a clean energy source that absorb and convert solar energy into electricity. much research has been done on solar cells with semiconductors from the iii-v group because of their high efficiency. barnham et al. improved quantum solar cell function by inserting a quantum well as the middle layer in a p-i-n cell [1]. paxman et al. found that the density of the optical current and conversion efficiency increased in p-i-n structures with gaas/algaas quantum wells [2]. in fact, a quantum well in the intermediate layer produces an additional electron-hole pair by absorption of photons with less energy and improves the spectral response by absorbing different energy photons. the increase in the shortcircuit current (jsc) increases absorption, but the increase in the recombination of carriers in the quantum well causes voc to decrease [2  received february 7, 2020; received in revised form june 14, 2020 corresponding author: reza sabbaghi-nadooshan niayesh building, emam hasan blvd., pounak, tehran, iran e-mail: r_sabbaghi@iauctb.ac.ir 478 s. abbasian, r. sabbaghi-nadooshan 3]. an ebl layer with a band gap larger than the p-n junction in the solar cell creates an electric field and prevents reconciliation of carrier density [4-5]. therefore, the ebl and hbl layers cause an increase the jsc without reducing the voc and increasing the gain in the p-i-n solar cells. in 2015, feroz ali et al achieved a 26.285% efficiency in si solar cell by designing an ebl layer with 2.1ev bandwidth [6]. denis et al showed in 2010 that inas /gaas quantum dot cells increase photon absorption [7]. peter james et al then designed a gasb/gaas quantum dot cell in 2011 [8]. wei-sheng designed an inas/gaassb quantum dot in 2012 to increase short-circuit current by 8.8% [9]. in 2013, xiaoguang et al achieved 17% efficiency by investigating the effects of si-doping on inas/gaas quantum dots [10]. the effect of electric field on different layers of inas/gaas quantum dots was investigated by yushuai et al in 2014 [11]. in 2015, inigo et al designed the inas/ingap quantum-dot cell [12]. utrilla et al increased the range of inas/gaas quantum dots in 2016 using semiconductors in inas/gaas cells [13]. an analytical study on inas/gaas quantum dots solar cells was conducted in 2017 by sayantan et al [14]. in 2018, they conducted studies on the optical properties of inas/gaas quantum dots cells [15]. the effects of temperature on inas/gaas quantum dots were investigated by abdelkader et al in 2019 [16]. the present study was undertaken to simulate a gaas/inas multi-quantum well solar cell using silvaco atlas tcad software [17]. as can be seen in [18], the bsf layer of the semiconductor in0.5(al0.7ga0.3)0.5p enhances the adsorption of charge carriers and promotes the solar cell yield. the proposed solar cell simulation confirms the increase efficiency with experimental results compared in this paper. in the present article, we used the ebl and hbl layer, which is similar in performance to bsf, and improved it via semiconductor in0.5(al0.7ga0.3)0.5p .the efficiency of the solar cell of the addition of the in 0.5(al 0.7ga 0.3) 0.5p semiconductor as the ebl and hbl layers is examined. the ebl layer (0.05 μm in thickness; doping 2×1015 1/cm3) and the hbl layer (2.0 μm in thickness; doping of 2×1019 1/cm3) increased solar cell efficiency 44.65%. 2. quantum-well solar cell structure in a p-i-n solar cell, due to the presence of an intermediate band in the band gap (eg), the bandwidth of the conduction and valence bands absorbs more inlet photons. as shown in fig. 1, the semiconductor band gap (eg) is divided into two smaller band gaps, el and eh. absorbing photons with less energy than the band gap (eg) leads to an increase in electron and hole production. fig. 1 the photon absorption processes in structure of an intermediate band study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell 479 to generate a pair of electron holes using photon absorption with less energy than the band gap (eg), an electron moves from the valence band to the middle band and places the hole in its bond. in the form of this transfer, the number 1 is displayed, and an electron from the midband to the conduction band is displayed with the number 2. by absorbing photons with energy higher than the energy band gap (eg), the transfer of an electron from the valence band to the conduction band causes the normal production of the electron-hole to be coupled with the number 3 (as shown). to improve both transitions 1 and 2, the middle band is first filled with the electron. the middle band receiving electrons from the valence band to the middle band and electron transfer from the middle band to the conduction band [19]. usually, longer wavelengths cannot direct the electron–hole generated in solar cells from the conduction band to the valence band because of low energy levels. in the intrinsic (i) region of a p–i–n solar cell, the quantum wells producing a pair of electrons and holes. as seen in fig. 2, the electrons and holes produced in the quantum wells are released by heat and tunneling, and through the electric field in the p-i-n solar cell, they collide and move toward the contacts [20]. fig. 2 quantum wells solar cell 3. materials selection for different layers table 1 shows the properties of the material for the various layers of the proposed cell. as shown in table 1, the in0.49ga0.51p, inas and in0.5(al0.7ga0.3)0.5p semiconductors prevent the recombination of electrons and holes by lattice matched to gaas. table 1 major parameters for the ternary in0.49ga0.51p, inas and quaternary in0.5(al0.7ga0.3)0.5p lattice matched to gaas materials used in this design [21-25]. inas inalgap ingap gaas material 0.36 2.3 1.9 1.42 band gap eg (ev) @300 k 15 11.7 11.6 13.1 permittivity (es/eo) 4.03 4.2 4.16 4.07 affinity (ev) 0.024 2.85 3 0.063 heavy eeffective mass (me*/m0) 0.471 0. 64 0. 64 0.5 heavy h + effective mass (mh*/m0) 30000 2150 1945 8800 emobility mun (cm2/v× s) 240 141 141 400 h + mobility mup (cm2/v× s) 8.7e+16 1.20e+20 1.30e+20 4.7e+17 edensity of states nc (cm-3) 6.6e+18 1.28e+19 1.28e+19 7.0e+18 h + density of states nv (cm-3) 480 s. abbasian, r. sabbaghi-nadooshan 4. modeling procedures 4.1. cell structure figure 3 shows the structure of the proposed model. the top of the cell is a window layer with a band gap of 1.9 ev, and a thickness of 0.05 μm. the quantum well contains 25 layers, each 0.005 μm in thickness with inas and gaas semiconductors. the lattice constant for inas is 6.0584 å and for gaas is 5.6533 å, which results in a non-matching of the lattice constant between the two semiconductors in the middle quantum layers. this problem is solved by making thin inas layers without exceeding the critical thickness 7 å, growing in the direction of 001. further thicknesses create trap alignments in the structure [17]. aluminum (0.7%) was added to the in0.49ga0.51p to increase the band gap, producing a in0.5(al0.7ga0.3)0.5p semiconductor with a 2.3 ev band gap. research shows that this semiconductor has a lattice constant matching and gaas [21-22]. also, in0.5(al0.7ga0.3)0.5p with creation of an electric field in the ebl and hbl layers reduces recombination of the electrons and holes. fig. 3 schematic of the proposed cell 4.2. analysis of proposed model the current density of the pin solar cell is obtained from eq. 1: ( ) ( ), ( ⁄ ) , ( ⁄ ) (1) where k is the boltzmann’s constant, t, the absolute temperature, q, the electron charge, j0, the reverse saturation current densities, φb is the net flux of incident photons with energies band gap energy and (2) β is the ratio of the current required in the intrinsic region at equilibrium to the usual reverse drift current, w is intrinsic region width, ab is the nonradiative coefficient and nib study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell 481 is the equilibrium intrinsic carrier concentration and bb is the barrier recombination coefficient. in eq. 3, the current to voltage in the solar cell (mqw) is shown [26]: ( ), ( ) ( ) , ( ) ⁄⁄ (3) where , *( )⁄ +and , *( ) ⁄ +-(4) fraction fw of the intrinsic region volume substituted by quantum well material ⁄ is the recombination coefficient enhancement factor, ⁄ is the effective volume densities of states enhancement factor, and short-circuit current density in pin solar cell (mqw) is obtained from eq. 5: , ( ) ( ) (5) where nph( > ) and nph(> ) is the net photon flux density corresponding to the energies between and for the bulk solar cell. the open circuit voltage in the solar cell pin (mqw) is obtained from eq. 6 [27]: , ( ) ( ) (6) 4.3. model simulation in this study, the performance of the proposed cell was simulated under the standard am 1.5 spectrum using atlas tcad, and it was segmented by a mesh-structured solar cell with different densities. the conmob model was used to calculate the electron and hole excitation capability and to combine the two optr and srh models. the solar cell exposure process was done using the luminous module [17]. 5. result and discussion 5.1. optimization of thickness and doping in the ebl and hbl layer investigating the doping and thickness of in 0.5(al 0.7ga 0.3) 0.5p in the ebl and hbl layers of the proposed solar cell is essential for efficient detection. fig. 4a shows that the highest efficiency for the ebl layer was at a thickness of 0.05 μm. fig. 4b shows the highest efficiency occurred by adding an ebl layer to a base cell at a doping of 2×1015 1/cm3. figs. 5a and 5b show the effect on the thickness and doping of efficiency by adding a hbl layer. maximum efficiency was achieved at a thickness of 2.0 μm and doping of 2×1019 1/cm3. it is clear that the addition of in0.5(al0.7ga0.3) 0.5p as ebl and hbl layers in the gaas-based multi-quantum well solar cell as an intermediate layer increased the efficiency 17.38%. 482 s. abbasian, r. sabbaghi-nadooshan fig. 4 a) different values of the ebl doping (thickness = 0.005(μm)), b) different values of the ebl thickness (doping = 5×1015( 1/cm3)) , fig. 5 a) different values of the hbl doping (thickness = 0.005(μm )), b) different values of the hbl thickness (doping = 5×1019( 1/cm3)) . 5.2. electric field the maximum field at the p-n junction can be calculated using eq. (7) as: (7) where q is the charge of the electron, na is the acceptor impurity density, nd is the donor impurity density, is the relative dielectric permittivity of the semiconductor, xp is the depletion region's width of the p-side, and xn is the depletion region's width of the n-side. the electric field in the junction's region is obtained through eq. 8 where nb is the impurity density in the semiconductor which has widest depletion region. study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell 483 (8) the width of depletion region in a p-n junction can be calculated using eq. (9) as: √ . / (9) where vbi is the internal potential in both sides of the junction [28]. the in vitro findings of references [29] and [30] were used to conclude that in0.5(al0.7ga0.3)0.5p semiconductors increase the open-circuit voltage and the vbi in the semiconductor. the eqs. (8) and (9) shows increased the electric field in the region. as seen in fig. 6, an additional field was created at the interface between the p and ebl layers and the maximum field strength increased from 2.5×104 to 2.2×105. at the interface between the n and hbl layers, the maximum field strength increased from 3.8×104 to 6.9×105, which reduced recombination in the proposed cell. fig. 6. maximum electric field at the junction region for base and proposed cell. 5.3. spectral response the spectral response demonstrates the absorption of photons in a solar cell. fig. 7 compares the produced and absorbed photons for the base and proposed cells. it can be fig. 7 generation of photocurrent of the base and proposed cell 484 s. abbasian, r. sabbaghi-nadooshan observed that the photon absorption rate in the optical spectrum (0.75-2.5 μm) of the proposed cell is higher than in the base cell, which increases the gain in the proposed cell. 5.4. photogeneration rate the photons produced in a solar cell are defined in eq. (10) (10) in this formula, g is the photogeneration rate, p is the total cumulative effect of reflections, transmissions and losses due to absorption over the ray path, y is the relative distance for the given ray, h is the planck's constant,  is the wavelength, c is the speed of light, α is the absorption coefficient, and is the internal quantum efficiency [31]. the absorption coefficient is obtained from the eq. (11), k coefficient has a positive relationship with the absorption coefficient of a material [28]: ( ) (11) considering eq. (11) and the investigation of the n and k coefficients in algainp semiconductor from reference [28], it can be concluded that by inserting an algainp semiconductor as ebl and hbl, the photogeneration rate will increase. fig. 8 shows the concordance of the theoretical and simulation results for the proposed cell and the base fig. 8 photogeneration rate of the base and proposed model 5.5. iv characteristics fig. 9 compares the i-v curve of the proposed solar cell with ebl and hbl layers with the base cell without ebl and hbl layers. as seen, the in0.5(al0.7ga0.3)0.5p semiconductor in the ebl and hbl layers decreased recombination, which increased the jsc and voc increased to a value of 0.107 v, compensating for the voltage drop caused by the quantum well layer. study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell 485 fig. 9 current density-voltage (j-v) characteristics of gaas-based multiple quantum well solar cells without ebl and hbl, with one ebl and hb 5.6. important parameters in solar cells solar cell efficiency can be expressed as shown in eq. (12) [32]. (12) where pmax is the maximum output power, pin is the input power and ff is the fill factor. the total current of a solar cell can be obtained from eq. (13). 0 . / 1 (13) k is the boltzmann constant, t is the temperature in kelvin, il is the current produced by the photons and i0 is the current in a dark state. short circuit current occurs when v = 0. isc can be obtained using relation 13 by substituting relation 14. the open circuit voltage is obtained as [33]: isc = −il (14) for i=0 in eq. (4) the open circuit voltage and fill factor are calculated in eqs. (15) and (16). ( ) (15) ( ) (16) table 2 shows the optimized proposed cell model with ebl and hbl layers and base cells without ebl and hbl layers. from the table, it is possible to compare important solar cell parameters such as jsc, voc ff and η. table 2 jsc, voc, ff, and conversion efficiency of multiple quantum well solar cell without ebl and hbl layer, with ebl. solar cells spectrum sun voc(v) jsc (ma/cm2) ff (%) (%) without ebl & hbl (25 layers q-well)[11] am1.5g 1.0 0.907 34.71 86.63 27.27 with ebl & hbl (25 layers q-well) am1.5g 1.0 1.014 51.10 86.20 44.65 486 s. abbasian, r. sabbaghi-nadooshan 6. conclusion in the present study, a in0.5(al0.7ga0.3) 0.5p semiconductor as ebl and hbl intermediate layers was added to a gaas-based 25-layer inas/gaas quantum-well solar cell. the impurity density and optimum thickness of the new layers reduced the drop in voc caused by the presence of the quantum layers. the optimized cell provides a voc of 1.014 v, jsc of 51.1 ma/cm2, ff of 86.2 % and a conversion efficiency of 44.65% under 1 sun. references [1] k. w. j. barnham and g. duggan, “a new approach to high-efficiency multi-band-gap solar cells”, j. appl. phys., vol. 67, pp. 3490, 1990. [2] k. barnham, b. braun, j. nelson, and m. paxman, “short-circuit current and energy efficiency enhancement in a low-dimensional structure photovoltaic device,” appl. phys. lett., vol. 59, pp. 135–137, 1991. [3] m. paxman, j. nelson, b. braun, j. connolly, and k. w. j. barnham, “modeling the spectral response of the quantum well solar cell”, j. appl. phys., vol. 74, pp. 614, 1993. [4] b. p. rand, j. li, j. xue, r. j. holmes, m. e. thompson, s. r. forrest, “organic double heterostructure photovoltaic cells employing thick tris(acetylacetonat)ruthenium(iii) exciton-blocking layers”, adv. mater., vol. 17, pp. 2714–2718, 2005. [5] y. k. kuo, t. h. wang, j. y. chang, j. d. chen, “slightly-doped step-like electron-blocking layer in ingan light-emitting diodes”, ieee photonics technol. lett., vol. 24, no. 17, pp. 1506, 2012. [6] m. f. ali, f. hossain, “effect of bandgap of ebl on efficiency of the p-n homojunction si solar cell from numerical analysis”, in proceedings of the international conference on electrical & electronic engineering (iceee), 2015, pp. 245–248. [7] d. guimard, r. morihara, d. bordel, k. tanabe, y. wakayama, “fabrication of inas/gaas quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage”, applied physics letters, vol. 96, no. 20, pp. 203507, 2010. [8] p. j. carrington, a. s. mahajumi, m. c. wagener, j. r. botha, q. zhuang, a. krier, “type ii gasb/gaas quantum dot/ring stacks with extended photoresponse for efficient solar cells”, physica b: condensed matter, vol. 407, no. 10, pp. 1493–1496, 2012. [9] w. s. liu, h. m. wu, f. h. tsao, t. l. hsu, j. i. chyi, “improving the characteristics of intermediateband solar cell devices using a vertically aligned inas/gaassb quantum dot structure”, solar energy materials & solar cells, vol. 105, pp. 237–241, 2012. [10] x. yang, k. wang, y. gu, h. ni, x. wang, t. yang, z. wang, “improved efficiency of inas/gaas quantum dots solar cells by si-doping”, solar energy materials & solar cells, vol. 113, pp. 144–147, 2013. [11] y. dai, s. polly, s. hellstroem, d. v. forbes and s. m. hubbard, “electric field effect on carrier escape from inas/gaas quantum dots solar cells”, in proceedings of the ieee 40th photovoltaic specialist conference (pvsc), 2014, pp. 3492–3497. [12] i. ramiro, j. villa, p. lam, s. hatch, j. wu, e. lopez, e. antol´ın, h. liu, a. mart ,wide-bandgap inas/ingap quantum-dot intermediate band solar cells, ieee journal of photovoltaics, vol. 5 , no. 3, pp. 840–845, 2015. [13] a. d. utrilla, d. f. reyes, j. m. llorens, i. artacho, t. ben, d. gonzález, ž. gačević, a. kurtz, a. guzman, a. hierro, j. m. ulloa, “thin gaassb capping layers for improved performance of inas/gaas quantum dot solar cells”, solar energy materials and solar cells, vol. 159, pp. 282–289, 2017. [14] s. biswas and a. sinha, “an analytical study of the minority carrier distribution and photocurrent of a p– i–n quantum dot solar cell based on the inas/gaas system”, indian journal of physics, vol. 91, pp. 1197–1203, 2017 [15] a. imran, j. jiang, d. eric, m. n. zahid, m. yousaf, z. h. shah, “optical properties of inas/gaas quantum dot superlattice structures”, results in physics, vol. 9, pp. 297–302, 2018. [16] a. aissat, n. harchouch, and j. p. vilcot, “optimization of the temperature effects on structure inas/gaas qdsc”, in: hajji b., tina g., ghoumid k., rabhi a., mellit a. (eds), in proceedings of the 1st international conference on electronic engineering and renewable energy. iceere 2018. lecture notes in electrical engineering, vol. 519. springer, singapore, 2019. [17] e. koletsios, gaas/inas multi quantum well solar cell, master of science in applied physics from the naval postgraduate school, 2012. study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell 487 [18] k. j. singh, s. k. sarkar, “highly efficient arc less ingap/gaas dj solar cell numerical modeling using optimized inalgap bsf layers”, optical quantum electronics, vol. 43, pp. 1–21, 2012. [19] a. martí, c. r. stanley, and a. luque. “intermediate band solar cells (ibsc) using nanotechnology”, chapter 17 in nanostructured materials for solar energy conversion. (elsevier b. v., 2006). [20] f. k. rault, “mathematical modelling of the refractive index and reflectivity of the quantum well solar cell”, chapter 4 in nanostructured materials for solar energy conversion. (elsevier b. v., 2006). [21] ching-hwa ho, ji-han li, and yu-shyan lin, “optical characterization of a gaas/in0.5(alxga1-x)0.5p/gaas heterostructure cavity by piezoreflectance spectroscopy”, optics express, vol. 15, no. 21, pp. 13886–13893, 2007. [22] i. vurgaftman, j.r. meyer, l.r. rammohan, “band parameters for iiiev compound semiconductors and their alloys”, j. appl. phys., vol. 89, no. 11, pp. 5815, 2001. [23] silvaco data systems inc, silvaco atlas user’s manual, 2010. [24] h.y. lee, c.t. lee, “the investigation for various treatments of inalgap schottky diodes”, in proceedings of the 8th international conference on electronic materials, iumrs-icem 23, 2002, pp. 99–102. [25] a. badea, f. dragan, l. fara, and p. sterian, “quantum mechanical effects analysis of nanostructured solar cell models”, renew. energy environ. sustain., vol. 1, no. 3, pp. 1–5, 2016. [26] j. c. rimada and l. hernández, “modelling of ideal algaas quantum well solar cells”, microelectronics journal, vol. 32, no. 9, pp. 719–723, 2001. [27] g. siddharth, v. garg, b. s. sengar, r. bhardwaj, p. kumar, s. mukherjee, “analytical study of performance parameters of ingan/gan multiple quantum well solar cell”, ieee transactions on electron devices, vol. 66, no. 8, pp. 3399–3404, 2019. [28] s. abbasian, r. sabbaghi-nadooshan, “design and evaluation of arc less ingap/algainp dj solar cell”, optik, vol. 136, pp. 487-496, 2017 [29] e. e. perl, j. simon, j. f. geisz, w. olavarria, m. young, a. d. daniel, j. friedman, m. a. steiner, “development of high-bandgap algainp solar cells grown by organometallic vapor-phase epitaxy”, ieee journal of photovoltaics, vol. 6, no. 3, pp. 770–776, 2016. [30] x. li, w. zhang, j. zhang, h. lu, d. zhou, l. sun, k. chen, “study on 2.05 ev aio.13gainp sub-cell and its hetero-structure cells”, in proceedings of the 40th photovoltaic specialist conference (pvsc), 2014, pp. 479–481. [31] s. abbasian, r. sabbaghi-nadooshan, “introducing a novel high-efficiency arc less heterojunction dj solar cell”, facta universitatis, series: electronics and energetics, vol. 31, no. 1, pp. 89–100, 2018. [32] s. m. sze, m. k. lee. semiconductor devices physics and technology, [33] j. p. dutta, p. p. nayak, g. p. mishra, “design and evaluation of arc less ingap/gaas dj solar cell with ingap tunnel junction and optimized double top bsf layer”, optik, vol. 127, pp. 4156–4161, 2016. instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 495 505 doi: 10.2298/fuee1503495p capacitive methods for testing of power semiconductor devices  vaclav papež 1 , jiri hájek 1 , bedrich kojecký 2 1 department of electrotechnology, faculty of electrical engineering, czech technical university in prague. 2 prague, czech republic abstract. electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. this paper first analyzes the theoretical voltage distribution on the bases of the polarized p-n junction, as well as the size of capacity. the measurement of the voltage-capacity dependence using the resonance principle is illustrated on the samples of 4kv and 6kv thyristors. the correspondence between theoretical estimation of the capacity, measured voltage capacity dependence based on the resonance principle and experimentally determined by injected charge proves the correctness of the applied procedures and assumptions. key words: capacity, p-n junction, voltage dependence, series connection of devices. 1. introduction most of the world leading manufacturers of power semiconductor devices offer discreet rectifying elements (diodes/thyristors) with off-state and reverse voltage up to 6 kv or 7 kv. thus, higher voltage converters must be constructed from serial-connected devices. the devices for a series connection (so called high voltage stack) must be chosen according to the following rules:  for static processes, the components must have "consistent" i-v characteristics; distribution dissipation resistors are often used for uniform voltage,  for dynamic loading (in a frequency application) a commutating charge of the components must also be considered; therefore resistor dividers are often supplemented with capacities. knowing the voltage dependence of the dynamic capacity of reverse polarized devices can help to design and optimize the series-connected high voltage stacks. in the following section, the distribution of charges and capacity between both bases of a polarized p-n junction will be theoretically described. received february 24, 2015; received in revised form april 30, 2015 corresponding author: vaclav papež department of electrotechnology, faculty of electrical engineering, czech technical university in prague, czech republic (e-mail: mnet.ok1vvp@atlas.cz) 496 v. papež, j. hájek, b. kojecký the evaluation of the voltage dependence of the dynamic capacity of a reverse polarized junction can also be a non-destructive measurement method enabling the evaluation of some physical and technological parameters of the device material. the same method can be used to evaluate the quality of the finished encapsulated devices, which allows verifying a real value of the electric field at the p-n junction or the resistivity of initial bulk silicon used for the wafer processing. 2. basic theoretical analysis the p-n junction of a high-voltage silicon semiconductor devices is generally created by sufficiently long high temperature (above 1200 °c) diffusion of acceptor atoms (al, b) into a single crystal n-type si wafer of typical resistivity in the order of 100 cm. a p-n junction extends to the depth of 80 m-120 m; the concentration profile of dopants follows the error function complement (erfc (x)) or gaussian distribution. in a reverse polarization and at a constant applied voltage, the structure is passed through by a constant reverse current formed by so called diffusion and recombination components [1], [2]. at a room temperature and a voltage in the order of 1.0 kv, the reverse current reaches the value in the order of 1 a. this assumption holds for 2” devices (both for diodes or thyristors) used in experiments. the distribution of the electric field on individual layers is described by poisson’s equation ( )de qn x dx   , (1) where e is the electric field, n is the density of electrically charged dopants and  is si permittivity. in a wide n basis, the density of donors is constant and the voltage distribution vn has a simple shape 2 0 2 d n n r qn x v xd           , (2) where dn is the width of the space charge region (scr) in the n basis. an exact solution of poisson’s equation for the adjacent layer p is a lot more complicated. however, basically essential for further consideration is the voltage on the layer. the layer inherently determines a maximum allowable voltage on the layer n, and thus the total reverse voltage of the junction structure t n pv v v  . (3) the requirement of equality of the charge q on adjacent layers represents another output of poisson’s equation 02n p d r nq q s qn v   . (4) regarding low values of reverse currents in a stationary mode, practically applicable values of q can be obtained only by numerical integration of the time current flows through the structure at a pulse loading by a sufficiently high (in the order of 100 hz) frequency, capacitive methods for testing of power semiconductor devices 497 or by a numerical integration of charging current of a parametric capacitor representing a monitored junction. at a sinusoidal type of loading, the charge pumped during one half-cycle after the substitution into expression (4) determines the value of the relevant part of the total voltage on the layer n. after further substitution into expression (3), we can compute currently immeasurable value of the voltage vp at the layer p 2 2 02 p t d r q v v s qn     . (5) for differential (measured) capacity of the layer n holds 0 2 d r n n qn c s v    . (6) from the formula for the total capacity ct of the layers adjacent is series n p t n p c c c c c   , (7) we can determine the dependence of cp as a function of voltage on individual layers. if the dependence of the capacity ct on the voltage vt applied to the junction is measured, then the charge accumulated in the junction capacities can be expressed as 0 ( ) ( ) ( )t t t dv t q c v dt dt     . (8) the result of the integration is not dependent on the course of the function v (t). the voltage dependence of the charge accumulated in the junction capacities can be obtained by substituting the inverse function t = f (v) into (8). 3. description of the samples all the following experiments and measurements were carried out on two independent groups of thyristors. these groups have totally different technology processing, predicted for similar application (phase control rectifiers, “f” housing puck design). each group of thyristors contained five samples. samples were taken from one production batch. first group contains samples of phase controlled rectifiers (pcr) with reverse and offstate voltage of 4 kv in diameter of 2". the pcrs were made by soldering technology, where si wafer is soldered using a 30m thick alsi film on a molybdenum substrate of the same diameter (53 mm). the thickness of the mo disk base is 1.2 mm; the thickness of the si substrate is about 800 μm and soldering to the anode side takes place in vacuum at about 700 °c. the required off-state voltage of 4 kv allows using a simple two-layer positive and negative bevelling (at an angle of about 30°) from the cathode side. an acid etched bevelling (a solution of hf and hno3) is protected by a conventional silicone gel 498 v. papež, j. hájek, b. kojecký hipac q1-9205. an active area of the blocking junction at the cathode side of the thyristor is about 1700 mm 2 ; an active area of the reverse junction at the anode side is about 2150 mm 2 . the active area of the cathode is coated with a layer of vapor-deposited contact metal (aluminum). the design of pcr uses a built-in amplifying gate. a simplified cross-section of the thyristor (without housing) is shown in fig. 1, left. molybdenum disc (diameter 53 mm; thickness 1,2 mm) si wafer 800 m thickness r = 26,5 mm r = 22 mm al layer silicon gel r = 26,5 mm r = 22 mm si wafer 1350 m thickness al layer al layer silic. gel fig. 1 cross-section of non-symmetrical structure of a 4kv pcr (left) and 6kv structure processed by strictly symmetrical free-floating technology (right). second group of samples contains phase controlled rectifiers with reverse and off-state voltage of 6 kv in diameter of 2". this pcr uses free-floating technology and very thick (up to 1350 m) si wafer. the thyristor is loosely mounted between two dilatation mo discs with a thickness of about 1 mm. the si wafer is two-sided edged; two two-layer negative bevellings are used again. on the etched bevelling a high protective layer of the silicon rubber hipac q1-9205 is applied. the thyristor also uses the design with the amplifying gate. active areas of a thyristor blocking and reversed junctions are approximately the same, of 1600 mm 2 , coated with a thin layer of vapor-deposited aluminum. a simplified crosssection of the thyristor (without housing) is shown in fig. 1, right. 4. provided measurements 4.1 measurement of voltage properties the measurement of the dc reverse and off-state i-v characteristics was carried out by means of a dc method using a high voltage power supply sz 10/2. the power supply was controlled by a computer program in a voltage range of 0-6 kv respective 8 kv, with a current limitation of 2 ma. dc voltage has been applied with the dv/dt rate of 1 kv/sec in both polarities. a gate port of the tested pcr has been opened. the characteristics were measured in a short time (of 6-8 seconds), thus the influence of temperature increase was negligible with respect to a low power loss. behaving of samples in both groups of thyristors was nearly identical with respect to achieved accuracy of measurement. here and bellow presented results were obtained always for one current sample. measured values were not deformed by means of any statistic processing. capacitive methods for testing of power semiconductor devices 499 0,0 0,5 1,0 1,5 2,0 0 2 4 6 8 i (ma) v (kv) 4kv pcr reverse polarityoff-state polarity 0,0 0,5 1,0 1,5 2,0 0 2 4 6 8v (kv) i (ma) 6kv pcr reverse polarity off-state polarity fig. 2 typical dc reverse and off-state i-v characteristics of both groups of samples. 4.2 measurement of the charge the first way of the measurement of the injected charge is based on the measurement at the voltage analyzer schuster sml 698. the device utilizes a pulse method [3]. the measured waveforms of the reverse/off-state voltage (v) and the injected capacity current (i) are shown in figure 3. there was chosen such a waveform which refers to a half period of 50hz sinusoidal voltage. the applied voltage was lower than the breakdown voltage during the entire measurement. it was measured by a dc method, as described in the previous section. 0 1 2 3 4 5 0 2 4 6 8 10t (ms) v (kv) -1 0 1 2 3 4 i (ma) reverse/off-state voltage reverse current off-state current 0 1 2 3 4 5 6 7 0 2 4 6 8 10t (ms) v (kv) -2 -1 0 1 2 3 4 5 i (ma) reverse/off-state voltage reverse/off-state current fig. 3 pulse measurement at the analyzer schuster sml 698: reverse and off-state voltage and current waveforms (4kv pcr left; 6kv pcr right). from the measured values of the capacity current, a numerical integration was carried out. the interval from zero to the maximum applied voltage (5 ms) was considered. thus the dependence of the injected accumulated charge from the area of an expanding p-n junction on the outer applied voltage was obtained. the injected charge is illustrated in figure 4 as the waveform “sml 698”. another method of determining the injected charge is based on the dependence of the parametric p-n junction capacity on the applied voltage. this method is described below. injected charge obtained using this method is illustrated in figure 4 as the waveform “dynamic capacity”. 500 v. papež, j. hájek, b. kojecký 0 1000 2000 3000 4000 0 1 2 3 4v (kv) q (nc) sml 698 (off-state) dynamic capacity (off-state) sml 698 (reverse) dynamic capacity (reverse) 0 1000 2000 3000 4000 0 2 4 6v (kv) q (nc) sml 698 dynamic capacity fig. 4 experimentally and numerically determined injected charges from a p-n junction area (4kv pcr left; 6kv pcr right). 4.3 measurement of capacity of p-n junction under reverse bias voltage the measurement of reverse polarized p-n junction semiconductor capacity is a methodology commonly used in the manufacture monitoring and testing of semiconductor devices. the measurement is very simple on principle, see fig. 5. in an ideal case, to ensure the measurement, a capacitance meter (an ac rlc meter) and low power regulated dc power supply delivering required bias voltage is sufficient. a measured p-n junction is biased by a reverse voltage from a dc power source through the impedance z1 which is chosen to be passed through by only a negligible part of the measuring current and, at the same time, a dc voltage drop between the source and the measured junction were small. in usual measurements at a higher frequency in units to tens of khz and at a reverse current in units to tens of μa, the resistor with real resistance of the size of several hundreds of kω to the units of mω is used as decoupling impedance. the rlc meter is separated from the dc bias circuit by the capacitor c. the capacity of the capacitor must be chosen much higher than the maximum measured capacity, without the need to correct the measurement results. the capacitor must also withstand the maximum dc voltage supply without being damaged. in case it is not possible to ensure the capacitor charging by the current passing through the rlc meter, the passage of the charging current is ensured by the impedance z2 that satisfies the same requirements as those for the impedance z1. rlc overvoltage protection z2 c z1 dut = + fig. 5 block diagram of the connection between an rlc analyzer and investigated p-n junction (dut). capacitive methods for testing of power semiconductor devices 501 the measuring circuit can be supplemented with over voltage protection circuits that must be designed with regard to their minimum effect on the measured capacity and that will be able to prevent the penetration of the over voltage to the rlc meter. however, their protection effectiveness is not usually high. in case of breakdown at the measured pn junction during high voltage measurements, the over voltage protection circuits are not usually able to ensure the rlc meter protection. the most serious drawback of the measuring circuit is that the separation of the high voltage biasing circuit from the measuring part of the rlc circuit is only virtual. any rapid change in voltage in a high voltage circuit part is transmitted to a measuring circuit part, and in the worst case, with a full voltage level. breakdown, an avalanche process on the measured junction, or an imperfect contact in the circuit of the measured junction between the decoupling capacitor and impedance meter give rise to the over voltage at the rlc meter clips, which usually leads to the destruction of the rlc meter, when measured at voltages greater than several tens of volts. for our measurements, we used a new measuring circuit design, where the p-n junction, whose capacity is being measured, was inserted into the resonance circuit. the circuit resonance frequency is evaluated and the searched p-n junction capacity is determined by its value. the circuit resonance frequency of the inductance l and capacitance c is expressed by formula 1 2 f lc  . (9) it must be considered that the resonance circuit capacity is not determined exclusively by the measured p-n junction capacity cm, but also by its coil self-capacity, connection capacity cc, and capacity cs of the decoupling capacitor that is connected in series with the measured capacity. expression (10) holds for capacity c, which must be also considered when evaluating the measured capacity m s c m s c c c c c c    . (10) the evaluation of the resonance circuit frequency is easily performed by adding the resonance circuit to the oscillator working as a control circuit, and by measuring the operating frequency of the oscillator, as shown in figure 6. cs rs dut = + l oscillator counter fig. 6 resonance method of measurement capacity of a biased p-n junction. both inductance and the resonance circuits can also be utilized for the construction of a special measuring circuit. the coil that shows minimum dc resistance can be used to 502 v. papež, j. hájek, b. kojecký mount an effective decoupling circuit that will reduce the penetration of the over voltage into the measuring circuit. the resonance circuit works as a narrowband filter which strongly inhibits the penetration of energy of potential avalanche processes and discharges in the high voltage circuit part to other circuits. in the resonance circuit, the coil itself or another decoupling capacitor are chosen to be high-voltage damage resistant. the operating frequency of the oscillator is evaluated, and by its value, the searched pn junction capacity is determined either by the computation according to expressions (9) and (10) or automatically. if the processor is used as a frequency meter, the measured capacity can be evaluated automatically. such evaluation can be done easily, e.g., by reading the searched values from the table of the calculation results. to reach the maximum over voltage protection of the measuring device, the oscillator can be designed by using a vacuum tube as an active element. the energy sufficient to damage the vacuum tube is much higher than the energy sufficient to damage the semiconductor element [4]. block diagram of the system for measuring high-voltage semiconductor device capacity is shown in fig. 7. cs rs dut hv + counter cc va l tube oscillator fig. 7 block diagram of an apparatus for capacity measurement. measured p-n junction is represented by a diode (dut), see figure 7. one lead of the diode (an anode) is connected to the coil l of the resonant circuit, whereas a second lead (a cathode) is connected to the separating capacitor cs and separating resistor. the capacity of the separating capacitor is usually relatively high. it is greater than the highest measured capacity so that the sensitivity of the measuring device for highest measured capacity would not be diminished. the impedance of the resonance circuit transformed into a node between the measured p-n junction and separating capacitor is small. the separating resistor has a high resistance value not to attenuate the resonance circuit too much. further, the resistor connects the high voltage supply (hv) to the measured p-n junction. the capacitor cc is not a physically existing component. capacity cc represents a self-capacitance of the coil and the capacity of connections that must be considered in evaluating the measured capacity. this design also allows the alternation of polarization voltage. resonance circuit (consisting of dut, cc, l) is designed as a controlling resonance circuit of the vacuum-tube oscillator. operating frequency of the oscillator determines the capacity of the measured p-n junction. capacitive methods for testing of power semiconductor devices 503 a high-impedance terminal of the resonant circuit serves as a node between the measured p-n junction and coil l. the terminal is connected to a control grid of the oscillating tube via the separating capacitor. the feed forward is created from the second grid of the tube by a coupling coil. the output signal from the oscillator is taken from a separating transformer in the anode circuit so that the oscillator operates as a three-point oscillator of a meissner type with an electron coupling. the operating frequency of the oscillator is evaluated by a simple digital frequency counter or a digital processor. this frequency can be eventually used even for the automatic evaluation of the measured capacity. the described device allows measuring of the capacity in the range of 10 pf to 10 nf with an accuracy better than 1 %. at the same time, a measured object (p-n junction) is polarized by dc voltage adjustable from a few tens of volts to 8 kv. 5. results of the measurements and their discussion the typical measured dependence of the thyristor capacities on the external applied voltage is shown in figure 8. in theory, for the total junction capacity ct, it is possible to use the following equation 2 2 1 2 t n dc v s qn         , (11) where ct is the total capacity of the diode and vn is the voltage distributed on an n base. from the measured waveforms shown in figure 4, there can be derived relatively accurately the experimental equation for the total capacity ct 2 t tc v k , (12) where k is a general constant. 100 1000 10000 10 100 1000 10000v (v) c t (pf) reverse polarity off-state polarity 100 1000 10000 10 100 1000 10000v (v) c t (pf) reverse polarity off-state polarity fig. 8 dependence of the sample capacities on the applied voltage (4kv pcr left; 6kv pcr right) at the thyristor, there are generally two similar dependences generated under different conditions; in thyristor polarization by reverse or off-state voltages, which depends on the 504 v. papež, j. hájek, b. kojecký conditions whether the areas of cut-off junctions in the thyristor structure are the same or different for different polarities. measured dependences c-v and i-t were used for creating the final (target) dependence q-v. this final dependence was used also for mutual comparison. searched q-v dependence was obtained by three different approaches:  in the first case, the dependence was obtained as the time integral of the charging current.  in the second case inversion dependence was obtained. v-q dependence was obtained as a dependence of voltage of polarized p-n junction on accumulated charge. we consider the measured voltage dependence of junction capacity, as it is given by eq. (13).  in the third case, when approximately evaluating the voltage dependence of the junction capacity, the total capacity of the junction was considered as a series connection of two capacities cn and cp according to equation (7). capacity cn was simply approximated by equation (6) as inversely proportional to the square root of vn and capacity cp as inversely proportional to the cube root of vp (14). ( )1 ( ) ( ) ( ) n i q i v n c v  . (13) 3 p p k c v  . (14) the dependence of polarizing voltage of the device on the accumulated charge was determined similarly as in the second case. the only difference was that the total capacity of the device was approximated by equation (15), for which optimum values of the constants were searched numerically. 1 3 1 2 np t vv c k k          . (15) from the cn capacity values (6) mentioned in the previous section some basic parameters of the samples can be calculated. 6. conclusions the main contribution of this paper is the description of newly developed measuring equipment. this equipment is designed for semiconductor p-n junction capacity measurement under high voltage bias. the use of standard rlc analyzer is exposed to the risk of equipment damage due to voltage penetration into the analyzer. the principle of described technical solution is the connection of measured capacity (e.g. p-n junction) to a resonance circuit. measured capacity is evaluated according to the resonance frequency of the circuit or according to the frequency of the oscillator. the advantage of described solution is the usage of coil as a separation circuit element. the coil effectively prevents the penetration of surge voltage into the measuring circuit (rlc analyzer). resonance circuit serves as a narrow band-pass filter heavily capacitive methods for testing of power semiconductor devices 505 suppressing possible surge voltage. the coil and other separating capacities are designed to withstand high voltage peaks. in previous works [5], only the properties of high voltage diodes were observed by described equipment. for the diode samples with their junction area s = 18 cm 2 for the applied voltage vt = 6 kv and an accumulated charge 3 c were determined vn = 5.3 kv; cn = 294 pf; cp = 2900 pf. space charge region extension in the n base and the maximum electric field intensity in the region can be specified as xmax = 680 m and emax = 15.6 kv/mm. similar voltage and capacitance distributions between the p and n bases were obtained for herein described samples of thyristors:  for the samples of symmetrical thyristors with the junction area s = 16 cm 2 , for the applied voltage vt = 6 kv in reverse and off-state polarity and for accumulated charge 2.5 c were determined: vn = 4.9 kv; cn = 257 pf; cp = 1400 pf. space charge region extension in the n base and the maximum electric field intensity in the region can be specified as xmax = 630 m and emax = 15.8 kv/mm.  for the samples of soldered thyristors with the junction area s = 17 cm 2 , for the applied voltage vt = 4 kv in the reverse polarity and accumulated charge 3.1 c were determined: vn = 3.4 kv; cn = 330 pf; cp = 4500 pf. space charge region extension in the n base and the maximum electric field intensity in the region can be specified as xmax = 420 m and emax = 16.2 kv/mm.  for the samples of soldered thyristors with the junction area s = 21 cm 2 for the applied voltage vt = 4 kv in the off-state polarity and accumulated charge 3.1 c were determined: vn = 3.3 kv; cn = 410 pf; cp = 4500 pf. space charge region extension in the n base and the maximum electric field intensity in the region can be specified as xmax = 400 m and emax = 16.5 kv/mm. these results correspond well to achievable si material parameters (emax 22 kv/mm), as well as to the technological parameters of components. acknowledgement: the authors would like to thank to the company abb s. r. o. polovodiče, novodvorská street 138a/1768 prague, both for provision of the thyristor samples and for accessing the voltage measurements on the equipment schuster sml 698. also, we would like to express our thanks to ms. němcová and mr. bušek both from fee ctu for helping with translation into english language. references [1] b. j. baliga, modern power devices, new york: john wiley & sons, 1987. [2] s. k. ghandhi, semiconductor power devices, new york: john wiley & sons, 1977. [3] schuster elektronik gmbh.: blocking voltage tester for power semiconductors sml 698. operating manual. www.schuster-elektronik.de. [on-line]. [4] v. papež, apparatus to measure capacitance of power high-voltage semiconductor devices, patent cz27126, www.upv.cz. [on-line]. [5] v. papež, j. hájek, b. kojecký, "complementary methods for a diagnostic evaluation of physical and electrical parameters of power silicon devices", in proceedings of isps’14, prague, 2014, pp. 111-116. 12759 facta universitatis series: electronics and energetics vol. 37, no 3, september 2024, pp. 541 – 560 https://doi.org/10.2298/fuee2403541g © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the synergy of mpjsa: a novel meta-heuristic approach for optimizing distribution systems with dgs pragya guru1, nitin malik2, sheila mahapatra3 1,2the northcap university, gurugram-122017, india 3alliance university, bangalore-562106, india orcid ids: pragya guru https://orcid.org/0009-0009-5858-5463 nitin malik https://orcid.org/0000-0003-1484-9841 sheila mahapatra https://orcid.org/0000-0001-6502-0772 abstract. this article uses an innovative approach to illustrate optimal distribution systems planning, incorporating dg systems. it intends to decrease energy losses while enhancing voltage profiles and the net profit, crucially influenced by reactive and active power injections. the recommended approach combines the marine predator algorithm (mpra) and jellyfish search algorithm (jsa) into a hybrid meta-heuristic optimization technique named mprjsa. the hybrid mpra and jsa draws inspiration from the efficient hunting behavior of marine predators like sharks and the collective movement patterns of jellyfish. by combining these strategies, it aims to enhance optimization algorithms exploration, exploitation, adaptability, and robustness in solving complex problems. motivated by the societal conduct of marine predators and jellyfish, this hybrid algorithm is employed to assess the consequences of installing dg in radial distribution systems, considering techno-economic benefits. multiple dgs are evaluated to achieve optimization goals. the mprjsa effectiveness is illustrated using the ieee 33-bus system, showing significant reductions in energy and power losses and upgraded voltage profiles with total net profit. comparative analysis with other natureinspired approaches highlights the excellence of the proposed method. key words: distributed generation, hybrid optimization, marine predator algorithm, jellyfish search, radial distribution system 1. introduction today, there is widespread agreement that using distributed generators (dgs) made of renewable energy sources is essential for meeting the world growing electricity demand, the difficulty and cost of using conventional power sources, the eventual depletion of received february 06, 2024; revised july 02, 2024; accepted july 04, 2024 corresponding author: pragya guru the northcap university, gurugram-122017, india e-mail: pragyaguru18@gmail.com https://orcid.org/0009-0009-5858-5463 https://orcid.org/0000-0003-1484-9841 https://orcid.org/0000-0001-6502-0772 mailto:pragyaguru18@gmail.com 542 p. guru, n. malik, s. mahapatra those resources, environmental concerns and lowering its overall carbon footprint [1]. as demand rises, it is one of the most effective and practical planning techniques for boosting the network performance. 1.1. background the distribution and transmission system are two primary parts of the electricity system [2]. at the distribution level, the word dg refers to small, dispersed generation units that are installed close to load center to meet the local energy demand. the introduction of dg into distribution system (ds) involves multiple benefits like improved power quality, cost savings, decrement in losses, improvement in the bus voltages and lower environmental contamination in terms of greenhouse emissions and therefore promotes sustainability. additionally, it aims to boost the security, stability, and dependability of the system. these days, decentralized microgrids, which include many kinds of dgs, are a hot issue because of their simplicity and efficacy [3]. due to these socio-economic benefits, the proportion of dg resources in the ds has significantly expanded. dg might have negative consequences on the system's stability, overheating and excessive power losses if not allocated optimally. 1.2. literature review the dgs are placed in the optimum configuration to minimize energy losses and maximize benefits. there have been some previous investigations that have allocated dgs. surveys like those in [4] and [5] have brought attention to how important this issue is. many researchers have been involved, employing a range of techniques that can be grouped into classical, analytical, metaheuristic, heuristic, and hybrid approaches. the most recent publications in each of these categories are discussed in this section to analyze the research undertaken and identify novel areas of further research. the kalman filter algorithm [6] and the use of dynamic programming and bifurcation analysis in [7] are examples of traditional methods for tackling the dg allocation problem. an analytical technique, which is claimed to be faster and easier than conventional approaches, is provided in [8] and [9] by developing an analytical expression. a dual index technique, an improved interval arithmetic method, and an analytical expression are all suggested in [10-12]. sensitivity approaches for resolving the dg allocation problem are included in other studies that make use of the analytical methodology [13] and [14]. the analytical method with optimal power flow methodology are used by authors [15] and [16]. the analytical approach is straightforward to use but it can only be used to consider one dg and one objective at a time. in [17], a non-linear programming was used to arrange dg sources in the optimum locations. to minimize energy loss, the authors use a wind-based dg allocation strategy using a probabilistic approach [18]. the method suggested in [19] is modified to try to determine the loss sensitivity factors deficiency and to determine where the dgs will ultimately be placed. in order to improve microgrid flexibility and lower operating costs, [20], a unified two-stage stochastic optimisation framework, highlights the usage of flexibility resources like generators with quick starts and quick responses to needs. the study in [21-23] offers a solid mixed integer linear programming (milp) model for various objectives in microgrid operation like uncertainty, reliability etc. that successfully integrates for various dg operations and models. optimizing distribution networks with dgs 543 the next category of studies are those that used the meta-heuristics algorithms such as swarm intelligence, evolutionary, and physics-based algorithms [24]. numerous evolutionary algorithms have been used to address dg integration challenges, including the ant lion optimization technique [25], improved moth algorithm [26] and genetic algorithm [27]. ref [28] design a new voltage stability index for optimal dg allocation using particle swarm optimization (pso). an optimisation strategy utilising a quadratic transfer function in a particular variation of pso is suggested [29]. pso is used because it can effectively tackle intricate, multi-dimensional optimisation issues. in [30] authors make use of bacterial foraging algorithm to identify the ideal sizes and placements for dgs to simultaneously improve voltage stability and minimize operating expenses. the ideal size and place for pv-dg is found using a weighted-sum approach and pso algorithm, respectively in [31]. the other methods for optimal dg allocation include the curve-fitted technique [32], modified honeybee mating [33]. the grey wolf optimization (gwo) explained in [34] is used to compute power system parameters and for the analysis of the impact of the various factors. in reference [35], the authors elucidate on the gwo approach for determining optimal locations for dg installations. modified metaheuristic approaches like modified whale optimization algorithm (mwoa) [36] show promise for real-world optimization problems, competing well with contemporary methods. the sensitivity-based approach [37] has shown to be effective in locating dgs optimally close to any load centers. combining the operators of different metaheuristic algorithms is one type of hybridization and having superior performance in various terms like solution quality, convergence speed etc. [38,39]. in [40], authors provide a fuzzy-based multi-objective hybrid ga to identify the best location and dg sizes in the rds for various load scenarios. clone selection algorithm was used with fuzzy set theory in two stages by the authors of [41] to determine the ideal placement for the dg and the size of the dg. for the effective dg planning of radial distribution systems, an enhanced wild horse optimization technique is available [42]. a new hybrid genetic pso is put forth to discover the best distribution of dg with multi-objective system in [43]. a hybrid teaching-learning based gfo [44] is suggested for single and multi-objective functions. the study [45,46] implements mixed binary continuous pso and iot enabled hierarchical framework to manage fully competitive electricity market problems while integrating renewable energy sources effectively. in [47], compare dg allocation methods based on sensitivity approach. in [48] authors redevelop the mpra and jfa individually and algorithms were then hybridized to get rid of their individual flaws. 1.3. research contribution this article considers multiple dgs for the best siting and rated power values under a variety of operational conditions. three case studies have been presented without and with dg. it has been found after a thorough analysis of the literature that the marine predator algorithm (mpra) and jellyfish search algorithm (jsa) algorithms have not been applied yet in case of dg allocation. the mpra and the jsa are lightened to shorten execution time while maintaining their advantages. the major highlights of this study are: a) a goal-oriented framework has been created by concurrently considering the three goals of reduce energy loss, enhance the voltage profile and save annual energy loss (aels). b) techno-economic benefits has been analysed on the best combination of dgs in rds. 544 p. guru, n. malik, s. mahapatra c) a novel optimization technique (hybridized mpr-jsa), has been developed to pick the optimal solution with regard to all objectives. d) on an ieee-33 distribution feeder, the suggested methodology superiority over alternative approaches has been evaluated. 2. modelling 2.1. line modelling a one-line diagram of fig. 1 is shown in fig. 2. the complex power injection at the uth bus is given as, (1) where, and is real and reactive power load at the uth bus, respectively. the current injected at the uth bus (iu) is given by (2) where, is the voltage at uth bus. the real power loss in a branch connecting node u and v is given by (3) (3) 2.2. load modelling the load model chosen is constant complex power load. (4) (5) fig. 1 sample distribution network fig. 2 single-line diagram optimizing distribution networks with dgs 545 2.3. dg modelling a dg of small rating is operated as constant negative pq load. the load at a dg installed node is given by (6) and (7). (6) (7) (8) where and is real and reactive power load connected at uth node, respectively. is generated real and is the reactive power of dg at uth node. is the maximum power factor. 3. problem formulation 3.1. objective function the presented work is mainly aimed to maximize the benefits of optimal planning of the integration of the dg in rds. hence, minimizing the total power loss (f1), voltage deviation (f2) and annual cost of energy loss (acel) and dg cost are formulated independently. 3.1.1. real power loss minimization the objective function is defined as f1 = minimize ( )= (9) 3.1.2 .voltage deviation minimization for voltage profile improvement, the voltage deviation has to be minimised which is defined as (10) 3.1.3 annual cost of energy loss and dg cost minimization the total net profit (tnp) is the difference between acel without dg and acel with dg. this can be maximised by minimizing the acel [28] due to introduction of dg $ (11) where the energy rate is 0.06$/kwh and annual time duration is 8760 h (24 h throughout 365 days). dg's real power cost characteristics [47] is expressed as /h (12) where cost coefficients are [27]: 546 p. guru, n. malik, s. mahapatra 3.2. constraints the objective functions are subject to constraints. the power balance equations are given as: (13) (14) where and are generated active and reactive powers at the uth bus, respectively. similarly, the inequality constraints are required to be restricted within upper and lower bounds and are given as in [28]: bus voltage limit, (15) thermal constraint, line current at node u (16) reactive limit, (17) real limit, (18) dg real power generation, (19) dg reactive power generation, (20) 4. marine predators-jellyfish search optimization algorithm 4.1. marine predators algorithm a contemporary algorithm such as mpra was inspired by the interactions between the ocean predators and their prey as well as the levy and brownian movement techniques [49]. 4.1.1. initialization mpra derives its initial solutions at random using (21). (21) where and rand (0,1) are the kth dimension of the jth prey’s position and a random number between (0,1), respectively. ubk and lbk are the upper and lower bounds on the kth dimension, respectively 4.1.2. optimization the algorithm is divided into three phases which simulate predator tactics use to capture a prey. each of the three primary stages of the mpra takes into account a different velocity ratio. a specified number of iterations are assigned for each phase. phase 1 (exploration stage): prey is quicker (higher velocity) than the predator phase 1 is selected while it < 1/3 maxiter. the solutions are updated using (22). (22) optimizing distribution networks with dgs 547 ) (23) ) (24) where and r, a matrix of numbers generated by the brownian movement and matrix of random numbers within (0,1), respectively and are of size 1 × dim. coefficient p is 0.5,. elite is the best solution found till date. phase 2 (exploration and exploitation stage): in terms of unit velocity ratios, the prey and the predator travel almost simultaneously. the solutions are equally divided for exploitation and exploration. the predator oversees exploring, and the prey is being exploited. the prey's displacement and the predator movement is dictated by the levy function and the brownian motion, respectively. the following equations are updated for the one-half of the population. ) (25) is a matrix of the same size that of r that contains random walk data generated by the levy function which is given as (26) where the is the flight length and a is in the range (1, 2) that controls the scale, taken as 1.5. the following integral shows the probability distribution associated with levy function: (27) which reduces further for colossal value of : (28) where γ is a gamma function. the latter segment of the population involved in exploration is governed by equations (29-31). (29) ) (30) (31) where cf controls the step size. phase 3 (exploitation stage): relative to the prey, the predator has a higher velocity. predators are kept up to date during this phase. eq. (32-33) formulated this behavior mathematically. (32) ) (33) 548 p. guru, n. malik, s. mahapatra fig. 3 pseudocode for mpra 4.1.3 eddy formation this phase emulates fish aggregating devices (fad), leading to a behavioural shift in predators, mathematically formulated as follows: (34) (35) where u is a binary vector, the fads is 0.2, xr1 and xr2 are two random solutions selected among the population. optimizing distribution networks with dgs 549 4.1.4 predator memory marine predators have an excellent memory for places where they have been successful in finding food and returns to those locations after successful foraging [49]. by preserving memories in mpra, this capacity is emulated. the solutions in each iteration is compared with its previous solution to determine the better solution. the pseudo-code is shown below. 4.2. artificial jellyfish search algorithm 4.2.1. inspiration the artificial jfsa [50] mimics the jellyfish movement in either swarm or on their route to the ocean current in search of food. 4.2.2. initialization jellyfish population is initialized randomly. this might lead to slow convergence and a risk of getting stuck in local optima due to poor population diversity. logistic chaotic map given in eq. (36) offers a reduced probability of early convergence and more varied initial populations than random initialization. (36) where, i is the logistic chaotic value; is varied to generate initial jellyfish population, ∉ {0, .25, .5, .75, 1}, and 4 is the value for the parameter η. 4.2.3. ocean current the average of the vectors from every jellyfish to the one in the best location at any given time is used to determine the direction of the ocean current. and is provided with (37). (37) where, represents number of jellyfishes in swarm and represents the best jellyfish while attraction govern factor is represented by . (38) where shows the mean position of all the jellyfishes in an ocean (39) where is distribution coefficient whose value is taken as 3. the new jellyfish position is defined as: (40) substituting (38) and (39) in (40) gives ( (41) 550 p. guru, n. malik, s. mahapatra 4.2.4. jellyfish swarm the majority of jellyfishes exhibit passive motion (type a) at first around their initial sites, as the jellyfish swarm is still forming. they start to move more actively (type b) as time progresses. (42) where represents the motion coefficient and its value is taken as . the direction of the motion of the jellyfish in search of its food and its updated location in the search space are simulated by (43) and (44), respectively. (43) where, represents the objective function and jellyfish location. (44) where (45) 4.2.5. the control mechanism the time control function ( ) [0,1] helps in determining the type of jellyfish motion and its switch from one swarm to another over time. the jellyfish float with the ocean current if its value surpasses and remain as part of the swarm when it is < . (46) where, maxiter represents maximum number of iterations. 4.2.6. boundary conditions a jellyfish that ventures outside the search area's bounds will eventually return back. this reintegration process is depicted by (47) where the ith jellyfish location in dth dimension is represented by and its lower and upper bounds in food search space is given by and, respectively . is the updated position of the ith jellyfish. the extended learning vector in learning automata (la) is given by the following equation: (48) (49) optimizing distribution networks with dgs 551 the optimal motions are more likely to be chosen since they have more likely values. non-optimal solution movements, on the other hand, have lower probability values and, thus, a lesser likelihood of being chosen. (50) where find is a searching function and pi represents the probability of ith motion. the pseudocode for the proposed jsa is illustrated in fig. 4. fig. 4 pseudocode for jsa 4.3. la-based hybridization the limitations of the individual metaheuristic algorithms such as insufficient movements of jellyfish, scattering of jellyfishes in the search space and mpra complexity, slow or premature convergence locking in local optima and sluggish search is overcome by the proposed hybridization of the la-based majsa which will improve the reliability of the algorithms. fig. 5 shows the majsa flowchart. 552 p. guru, n. malik, s. mahapatra fig. 5 flow chart for hybrid mprjsa optimizing distribution networks with dgs 553 5. simulation results and analysis the ieee 33 bus rds [51] has (3.72+j2.3) mva of power load demand. the base values are 12.66 kva and 100 mva. it is used to illustrate and evaluate the feasibility of the suggested technique in installation of dg units in using hybrid mpjsa. the dg size cannot exceed 2 mw. the three case studies considered are 1. base case scenario (no dg) 2. second scenario (2 dg units’ installation) 3. third scenario (3 dg units’ installation) the load flow calculations provide the bus voltages and power losses. the acel and energy loss reductions are calculated. the performance of hybrid mpjsa is compared to pso, differential evolution (de), jsa and mpra algorithms available in the literature and is presented in table 1. in all the scenarios, the performance from the hybrid mpjsa outweighs others in terms of losses and (min) voltage. applying the suggested methodology yields the best dg integration for both the cases under consideration. table 1 performance evaluation of different algorithms for 33-bus rds at unit power factor 5.1. dg impact on power losses table 1 makes it evident that the real power loss (rpl) and reactive power loss (repl) without dg placement was found to be 210.0740 kw and 142.4372 kvar. after the 2-dg and 3-dg unit installation the losses got reduced to 79.0077 kw and 48.195 kvar with a real power loss mitigation (rplr) of 62.38% and 77.057%, respectively. this will result in the release of the 131.0627 kw in real power demand. no. of dg algorithm dg location vmin pu. @ bus (% improvement) rpl (kw) rplr in kw (%) repl (kvar) c(pdg) ($/h) acel ($) tnp/aels ($) base case _ 0.9131@ 18 210.0704 142.4372 110,413.0 two dg pso 14, 33 0.9595 (5.08%) 79.6471 130.4233 (62.08) 52.3366 6.855 41,862.51 68,550.49 de 15, 33 0.9595 (5.08%) 79.6172 130.4532 (62.09) 52.3103 6.856 41,846.80 68,556.2 jsa 15, 32 0.9619 (5.35%) 79.2253 130.8451 (62.28) 51.5741 6.877 41,640.81 68,772.19 mpra 15, 31 0.9620 (5.36%) 79.0780 130.9924 (62.35) 51.5115 6.885 41,563.39 68,849.61 proposed mprjsa 15, 32 0.9622 (5.37%) 79.0077 131.0627 (62.38) 51.4336 6.888 41,526.44 68,886.56 three dg pso 15, 31, 33 0.9714 (5.84%) 51.4309 158.6395 (75.51) 35.2859 8.338 27,032.08 83,380.92 de 16, 30, 33 0.9715 (5.84%) 49.0461 161.0243 (76.65) 32.9086 8.463 25,778.63 84,634.92 jsa 15, 30, 33 0.9748 (6.75%) 48.7440 161.3264 (76.79) 32.6901 8.479 25,619.84 84,793.16 mpra 13, 30, 33 0.9660 (5.79%) 49.4146 160.6558 (76.47) 33.5292 8.444 25,972.31 84,440.69 proposed mprjsa 15, 30, 32 0.9716 (6.40%) 48.1950 161.8754 (77.057) 31.8756 8.508 25,331.29 85,081.71 554 p. guru, n. malik, s. mahapatra fig. 6 convergence curve with 2 dg units for scenario 2, the corresponding percentages of power loss reduction are 62.08, 62.09, 62.28, 62.35 and 62.38 for techniques pso, de, jsa mpra and hybrid mprjsa respectively. for scenarios 3, the corresponding percentages of power loss reduction are 75.51, 76.65, 76.79, 76.47 and 77.057 for techniques pso, de, jsa mpra and hybrid mprjsa respectively. this will result in the release of the 161.8754 kw in real power demand. comparing the convergence curves shown in fig 6 and 7, it is observed that the suggested method achieved faster convergence than the other techniques. 5.2. dg impact on voltage profile table 1 shows that each scenario significantly improves the system's min voltage magnitude. in the base case, the min voltage is enhanced from 0.9131 pu to 0.9622 and 0.9716 pu at 18th bus for case 2 and case 3 with a voltage improvement of 5.37% and 6.40% respectively. fig. 8 and 9 compare and display the voltage profiles for two scenarios which have greatly improved following integration of dg. 5.3. dg impact on annual energy loss savings the strategic placement of the dg units improves net profit by mitigating the acel from 110,413.00$ to 41,526.44$ and 25,331.29$ for 2-dg and 3-dg units, respectively. the tnp for the two cases are 68,886.56$ and 85,081.71$, respectively from table 1. optimizing distribution networks with dgs 555 fig. 7 convergence curve with 3 dg units fig. 8 voltage profile for 2 dg installation 556 p. guru, n. malik, s. mahapatra fig. 9 voltage profile for 3 dg units installation in table 2, the outcomes of mprjsa are contrasted with a number of previously established techniques from the literature. when compared to other approaches, mprjsa is observed to provide the best result. table 2 comparison of outcomes with alternative algorithms for 33-bus rds 6. conclusion the hybrid mpjsa method has been effectively used in this study to address the dg integration in the distribution system. to demonstrate the superiority of the proposed approach in loss reduction and improved voltage magnitude due to 2 dg and 3 dg installation in ieee 33 rds is used to evaluate the suggested technique to provide notable performance in terms of appreciable rise in min voltage, reduction in acel and remarkable net profit savings. the percentage of rplr and net savings are improved in the range of 62.08-77.057% with multiple dg penetration. the findings show that multiple dg installation is more efficient than single dg installation. the simulated outcomes are also compared with the other algorithms result reported in the literature. method power loss without dg, kw two dgs three dgs location power loss, kw location power loss, kw fuzzy clonal algorithm [40] 203.27 30, 32 117.3946 30, 31, 32 117.358 backtracking search [19] 210.84 13, 31 89.34 13, 28, 31 89.05 kha [54] 210.98 29, 13 87.426 14, 24, 30 73.2968 skha [54] 210.98 13, 30 87.1656 13, 24, 30 72.7853 proposed mprjsa 210.0704 15, 32 79.0077 15, 30, 32 48.1950 optimizing distribution networks with dgs 557 according to the computational findings, the hybrid mpjsa performs more effectively than the others in most circumstances. the proposed solution methodology provides higher net savings. power and energy systems have undergone a revolution in the previous several decades. one potential future goal is to manage distributed energy resources (ders) deployment, and microgrids (an array of dispersed energy supplies and loads that is often linked to the grid upstream) have emerged as a critical component of smart grids [52]. studying algorithms in larger power systems with more buses and var compensators presents promising research avenues. this includes scalability assessment, power flow optimization, var compensator integration, network resilience, renewable energy management, cybersecurity, and real-time challenges. risk management during energy exchange, owing to load demand and dg uncertainty in rds were also future issues [53]. researchers aim to advance algorithmic solutions for better power grid efficiency, reliability, and resilience. references [1] b. dey, s. raj, s. mahapatra, and f. p.g. márquez, "optimal scheduling of distributed energy resources in microgrid systems based on electricity market pricing strategies by a novel hybrid optimization technique", international journal of electrical power & energy syst., vol.134, pp. 107419, january 2022. [2] m. s. shaikh, c. hua, m. a. jatoi, m. m. ansari, and a. a. qader, "parameter estimation of ac transmission line considering different bundle conductors using flux linkage technique", ieee canadian journal of electrical and computer engineering, vol. 44, no. 3, pp. 313−320, june 2021. [3] s. a. mansouri, e. nematbakhsh, a. ahmarinejad, a. r. jordehi, m. s. javadi, and m. marzban, "a hierarchical scheduling framework for resilience enhancement of decentralized renewable-based microgrids considering proactive actions and mobile units", renewable and sustainable energy reviews, vol. 168, pp. 112854, october 2022. [4] a. r. jordehi, "allocation of distributed generation units in electric power systems: a review", renewable and sustainable energy reviews, vol. 56, pp. 893−905, april 2016. [5] p. prakash and d. k. khatod, "optimal sizing and siting techniques for distributed generation in distribution systems: a review", renewable and sustainable energy reviews, vol. 57, pp. 111−130, may 2016 [6] l. soo-hyoung and p. jung-wook, "selection of optimal location and size of multiple distributed generations by using kalman filter algorithm", ieee trans. power syst., vol. 24, no. 3, pp. 1393−1400, august 2009. [7] m. esmail, e. c. firozjaee, and h. a. shayanfar,. "optimal placement of distributed generations considering voltage stability and power losses with observing voltage-related constraints", applied energy, vol. 113, pp. 1252−1260, january 2014 [8] n. acharya, p. mahat and n. mithulananthan, "an analytical approach for dg allocation in primary distribution network", int. j. electr. power energy syst., vol. 28, no. 10, pp. 669−678, december 2006 [9] t. gözel, and m. h. hocaoglu, "an analytical method for the sizing and siting of distributed generators in radial systems", electric power systems research, vol. 79, no. 6, pp. 912−918, june 2009 [10] d. q. hung and n. mithulananthan, and r. c. bansal, "analytical expressions for dg allocation in primary distribution networks", ieee transactions on energy conversion, vol. 25, no. 3, pp.814−820, august 2010 [11] d. q. hung and n. mithulananthan, "multiple distributed generators placement in primary distribution networks for loss reduction", ieee trans. industr. electron., vol. 60, no. 4, pp. 1700−1708, april 2013. [12] d. q. hung and n. mithulananthan, and r. c. bansal, "analytical strategies for renewable distributed generation integration considering energy loss minimization" , applied energy, vol. 105, pp. 75−85, may 2013 [13] v. v. s. n. murty and a. kumar, "comparison of optimal dg allocation methods in radial distribution systems based on sensitivity approaches", international journal of electrical power & energy systems, vol. 53, pp. 450−467, december 2013. [14] s. elsaiah, m. benidris, and j. mitra, "analytical approach for placement and sizing of distributed generation on distribution systems", iet generation, transmission & distribution, vol. 8, no. 6, pp. 1039−1049, june 2014 558 p. guru, n. malik, s. mahapatra [15] a. tah, and d. das. "novel analytical method for the placement and sizing of distributed generation unit on distribution networks with and without considering p and pqv buses", international journal of electrical power & energy systems, vol. 78, pp. 401−413, june 2016 [16] mahmoud, karar, naoto yorino, and abdella ahmed. "optimal distributed generation allocation in distribution systems for loss minimization", ieee transactions on power systems, vol. 31, no. 2, pp. 960−969, april 2015 [17] y. m. atwa and e. f. el-saadany, m. m. a. salama, and r. seethapathy. "optimal renewable resources mix for distribution system energy loss minimization", ieee transactions on power systems, vol. 25, no. 1, pp. 360−370, october 2009. [18] y. m. atwa and e. f. el-saadany, "probabilistic approach for optimal allocation of wind-based distributed generation in distribution systems", iet renewable power generation, vol. 5, no. 120, pp.79−88, january 2011. [19] a. el-fergany, "optimal allocation of multi-type distributed generators using backtracking search optimization algorithm", international journal of electrical power & energy systems, vol. 64, pp.1197−1205, january 2015. [20] a. r. jordehi, v. s. tabar, s. a. mansouri, f. sheidaei, a. ahmarinejad, and s. pirouzi, "two-stage stochastic programming for scheduling microgrids with high wind penetration including fast demand response providers and fast-start generators", sustainable energy, grids and networks, vol. 31, p.100694, september 2022. [21] a. r. jordehi, "scheduling heat and power microgrids with storage systems, photovoltaic, wind, geothermal power units and solar heaters", journal of energy storage, vol. 41, p. 102996, september 2021. [22] a. r. jordehi, "information gap decision theory for operation of combined cooling, heat and power microgrids with battery charging stations", sustainable cities and society, vol. 74, pp. 103164, november 2021. [23] a. r. jordehi, "economic dispatch in grid-connected and heat network-connected chp microgrids with storage systems and responsive loads considering reliability and uncertainties", sustainable cities and society, vol. 73, pp. 103101, october 2021. [24] s. mirjalili, s. m. mirjalili, and a. lewis, "grey wolf optimizer adv eng softw", vol. 69, pp. 46–61, march 2014. [25] e. s. ali, s. m. abd elazim, and a. y. abdelaziz, "ant lion optimization algorithm for optimal location and sizing of renewable distributed generations", renewable energy, vol. 101, pp. 1311−1324, february 2017. [26] m. s. shaikh, s. raj, m. ikram, and w. khan, "parameters estimation of ac transmission line by an improved moth flame optimization method", journal of electrical systems and information technology, vol. 9, no. 1, p. 25, december 2022. [27] m. karimi, and m. r. haghifam, "risk based multi‐objective dynamic expansion planning of sub‐transmission network in order to have eco‐reliability, environmental friendly network with higher power quality", iet generation, transmission & distribution, vol. 11, no. 1, pp. 261−271, january 2017. [28] s. s. parihar, and n. malik, "optimal allocation of renewable dgs in a radial distribution system based on new voltage stability index", international transactions on electrical energy systems, vol. 30, no. 4, p. 12295, april 2020. [29] a. r. jordehi, "an improved particle swarm optimisation for unit commitment in microgrids with battery energy storage systems considering battery degradation and uncertainties", international journal of energy research, vol. 45, no. 1, pp. 727−744. january 2021. [30] m. kowsalya, "optimal size and siting of multiple distributed generators in distribution system using bacterial foraging optimization", swarm and evolutionary computation, vol. 15, pp. 58−65, april 2014. [31] s. s. parihar and n. malik,"analysing the impact of optimally allocated solar pv-based dg in harmonics polluted distribution network", sustainable energy technologies and assessments, vol. 49, pp. 101784, feberury 2022 [32] f. s abu-mouti, and m. e. el-hawary, "heuristic curve-fitted technique for distributed generation optimisation in radial distribution feeder systems", iet generation, transmission & distribution, vol. 5, no. 2, pp. 172−180, february 2011. [33] t. niknam, s. i. taheri, j. aghaei, j. tabatabaei, and m. nayeripour, "a modified honey bee mating optimization algorithm for multiobjective placement of renewable energy resources", applied energy, vol. 88, no. 12, pp. 4817−4830, december 2011. [34] m. s. shaikh, c. hua, m. a. jatoi, m. m. ansari, and a. a. qader, "application of grey wolf optimisation algorithm in parameter calculation of overhead transmission line system", iet science, measurement & technology, vol. 15, no. 2, pp. 218−231, march 2021. optimizing distribution networks with dgs 559 [35] u. sultana, a. b. khairuddin, a. s. mokhtar, n. zareen, and b. sultana, "grey wolf optimizer-based placement and sizing of multiple distributed generation in the distribution system", energy, vol. 111, pp. 525−536, september 2016. [36] m. s. shaikh, c. hua, s. raj, s. kumar, m. hassan, m. m. ansari, and m. a. jatoi. "optimal parameter estimation of 1-phase and 3-phase transmission line for various bundle conductor’s using modified whale optimization algorithm", international journal of electrical power & energy systems, vol. 138, pp. 107893, june 2022. [37] a. arya, s. s. verma, s. mehroliya, s. tomar, and c. s. rajeshwari, "optimal placement of distributed generators in power system using sensitivity analysis", advances in energy technology, springer, singapore, pp. 749−759, 2022. [38] m. s. shaikh, s. raj, r. babu, s. kumar, and k. sagrolikar, "a hybrid moth–flame algorithm with particle swarm optimization with application in power transmission and distribution", decision analytics journal, vol. 6, pp. 100182, march 2023. [39] m. s. shaikh, s. raj, s. a. latif, w. f. m., and s. kamel, "optimizing transmission line parameter estimation with hybrid evolutionary techniques." iet generation, transmission & distribution 18, vol no. 9, pp. 1795−1814, may 2024. [40] a. a. hassan, f. h. fahmy, a. e. s. a. nafeh, and m. a. abu‐elmagd, "hybrid genetic multi objective/fuzzy algorithm for optimal sizing and allocation of renewable dg systems", international transactions on electrical energy systems, vol. 26, no. 12, pp. 2588−2617, december 2016. [41] m. p. lalitha, v. v. reddy, n. s. reddy and v. u. reddy, "dg source allocation by fuzzy and clonal selection algorithm for minimum loss in distribution system", distributed generation & alternative energy journal, vol. 2, no. 4, pp.17−35, september 2011. [42] m. h. ali, s. kamel, m. h. hassan, m. tostado-véliz, and h. m. zawbaa, "an improved wild horse optimization algorithm for reliability based optimal dg planning of radial distribution networks", energy reports, vol. 8, pp. 582−604, november 2022 [43] m.p. ha, m. nazari-heris, b. m. ivatloo, and h. seyedi, "a hybrid genetic particle swarm optimization for distributed generation allocation in power distribution networks", energy, vol. 209, p. 118218, october 2020. [44] s. a. nowdeh, i. f. davoudkhani, m. j h. moghaddam, e. s. najmi, a. y. abdelaziz, a. ahmadi, s. e. razavi, and f. h. gandoman, "fuzzy multi-objective placement of renewable energy sources in distribution system with objective of loss reduction and reliability improvement using a novel hybrid method", applied soft computing, vol. 77, pp. 761−779, april 2019 [45] a. r. jordehi, "a mixed binary‐continuous particle swarm optimisation algorithm for unit commitment in microgrids considering uncertainties and emissions", international transactions on electrical energy systems, vol. 30, no. 11, p. 12581, november 2020] [46] a. s. mansouri, a. r. jordehi, m. marzband, m. tostado-véliz, f. jurado, and j. a. aguado. "an iotenabled hierarchical decentralized framework for multi-energy microgrids market management in the presence of smart prosumers using a deep learning-based forecaster", applied energy, vol. 333, p. 120560. march 2023. [47] v. v. s. n. murty and a. kumar, "comparison of optimal dg allocation methods in radial distribution systems based on sensitivity approaches", international journal of electrical power & energy systems, vol. 53, pp. 450−467, december 2013. [48] s. barshandeh, r. dana, and p. eskandarian, "a learning automata-based hybrid mpa and js algorithm for numerical optimization problems and its application on data clustering", knowledge-based systems, vol. 236, pp. 107682, january 2022. [49] a. faramarzi, m. heidarinejad, s. m. mirjalili and a. h. gandomi, "marine predators algorithm: a nature-inspired metaheuristic", expert syst. appl., vol. 152, pp. 113377, august 2020. [50] j. s. chou, and d. n truong, "a novel metaheuristic optimizer inspired by behavior of jellyfish in ocean", applied mathematics and computation, vol. 389, pp. 125535, january 2021. [51] r. rajaram, k. s. kumar, and n. rajasekar, "power system reconfiguration in a radial distribution network for reducing losses and to improve voltage profile using modified plant growth simulation algorithm with distributed generation (dg) ", energy reports, vol. 1, pp. 116–122, november 2015. [52] a. r. jordehi, "dynamic environmental‐economic load dispatch in grid‐connected microgrids with demand response programs considering the uncertainties of demand, renewable generation and market price", international journal of numerical modelling: electronic networks, devices and fields, vol. 34, no. 1, pp. e2798, january 2021. 560 p. guru, n. malik, s. mahapatra [53] s. a. mansouri, e. nematbakhsh, a. r. jordehi, m. tostado-véliz, f. jurado, and z. leonowicz, "a riskbased bi-level bidding system to manage day-ahead electricity market and scheduling of interconnected microgrids in the presence of smart homes", in proceedings of the 2022 ieee international conference on environment and electrical engineering and 2022 ieee industrial and commercial power systems europe (eeeic/i&cps europe), ieee, june 2022, pp. 1−6. [54] s. a. chithradevi, l. lakshminarasimman, and r. balamurugan, "stud krill herd algorithm for multiple dg placement and sizing in a radial distribution system", engineering science and technology, an international journal, vol. 2, no. 2, pp.748−759, april 2017. 11841 facta universitatis series: electronics and energetics vol. 36, no 3, september 2023, pp. 315-328 https://doi.org/10.2298/fuee2303315l © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd invited paper influence of soil conductivity in capacitive coupling between power lines and pipelines giovanni lucca piacenza, italy abstract. generally, when studying the capacitive coupling between power lines and pipelines the soil is considered a perfect conductor and its real conductivity is ignored; in this paper we want to overcome this limitation and present a study about the influence of soil conductivity just in the context of the above mentioned phenomenon. in order to do that, we derive analytical formulas for calculating the electric scalar potential, both in the air and in the ground, generated by an overhead conductor, and we compare some results obtained by means of these formulas with the ones deriving from the well known method of images that is based on the assumption of perfectly conducting soil. key words: electromagnetic interference, capacitive coupling, electromagnetic compatibility, power lines, pipelines 1. introduction a typical electromagnetic compatibility (emc) problem, at power frequencies (50-60hz), is represented by the electromagnetic interference generated by power lines/electrified railway lines (sources of the interference) on pipelines and metallic telecommunication cables (victims of the interference); as a consequence of this phenomenon, dangerous over-voltages and over-currents can be generated on the victim line, thus representing a risk for staff operating along it and for equipment/apparatuses connected to the induced plant [1-2]. in the specific case of pipelines, also an incremented risk of ac corrosion due to induced voltage has to be considered [3-4]. the basic assumption common to the various models available in literature to study these problems 5-8] is the quasi-static approximation; according to it, the electromagnetic coupling between source and victim of the interference can be split into: inductive (or magnetic), conductive (also said resistive or galvanic) and capacitive (or electric) coupling and each one of them may be analyzed separately. while inductive and conductive couplings are studied by taking into account the ground conductivity, when dealing with capacitive coupling, the ground is considered a received may 18, 2023; revised july 12, 2023; accepted july 28, 2023 corresponding author: giovanni lucca piacenza, italy e-mail: vanni_lucca@inwind.it 316 g. lucca perfect conductor [6], [9]. even if such an assumption leads to correct results which are confirmed by field experience, from the logical and theoretical point of view, this is contradictory because, in the context of the same physical phenomenon (i.e. the whole electromagnetic interference sum of inductive, conductive and capacitive couplings), the ground is considered, on one side, a medium having finite conductivity and on the other side a perfect conductor. the purpose of this paper is to propose a different approach to the modeling of the capacitive coupling which is no more based on the hypothesis of ground as a perfect conductor, but, on the contrary, the soil conductivity and permittivity are taken into account. in such a way, it is possible to have an idea of the influence of the aforementioned parameters which, on the contrary, is hidden in the approach based on the hypothesis of a perfectly conductive ground. 2. mathematical formulation of the problem as the plants that are sources of the electromagnetic field (power/railway lines) have the characteristic of being long filamentary structures, they can be represented, for our purposes, by means of the transmission line model; as known, the advantage of the transmission line model is the cylindrical symmetry so that the electromagnetic field generated by the structure is equal in any transveral plane perpendicular to the line axis. in such a way, the geometry of the problem from tridimensional can be simplified into bidimensional. moreover, as in this paper we are dealing solely with capacitive coupling, the only electromagnetic quantity to be considered is the scalar electric potential v; thus in the following we are going to focus on the differential equations and on their solutions relevant to v in both the media involved in the problem that is: air and ground. another assumption adopted is that all the materials involved are homogeneous, linear and isotropic; nevertheless, when considering the soil conductivity and relative permettivity it is necessary to mention that they are not constant but have a frequency dependent behaviour. in fact, according to a frequently used model for soil parameters proposed by visacro and alipio [10-11], both the above mentioned parameters can be expressed by means of simple analytical formulas (see appendix a), in the range [100hz, 4mhz]. nevertheless our analysis will be restricted to frequencies lesser than 10khz because this is the range of interest of electromagnetic interference produced by power/railway lines on pipelines. for simplicity we shall consider a source represented by a single conductor, but the results presented in this paragraph can be immediately extended to the case of a source composed by more than one conductor by simply applying the superposition principle. in fig. 1, a simple representation of the geometry of the problem is shown. in the drawing we can see that the air is characterized by the electrical parameters (0, 0, 0) being its conductivity 0=0 while 0 and 0 are the vacuum absolute magnetic permeability and permittivity respectively; as far as the ground is concerned, it is characterized by conductivity 1, magnetic permeability 1 (that will be assumed equal to 0) and permittivity 1=0r1 being r1 its relative dielectric constant. finally, the conductor axis, having coordinates (d, h), is carrying a per unit length (p.u.l.) linear current density lin. influence of soil conductivity in capacitive coupling 317 fig. 1 sketch of the geometry of the problem for the following, it is necessary to introduce these parameters: 2 2 0 0 0 0( )ok j j    = − = (1) 2 2 1 1 1 1 1 0 0 1 0 ( ) r j k j j            = − +  −    (2) being j the imaginary unit, =2f the angular frequency and f the frequency. it is also worthwhile to define the complex relative ground permittivity 1 ˆ r by means of: 1 1 1 0 ˆ r r j      = −    (3) from maxwell equations expressed in phasor form and by assuming a time dependence of the type exp(jt), it is possible to obtain the partial differential equations for the potential vi=vi(x, y) in both the media: air (i=0) and ground (i=1). for the air we have: 2 2 20 0 0 02 2 0 ( , ) ( , ) ( , ) ( ) ( )linv x y v x y k v x y x d y h x y       + + = − − −   (4) being  the dirac delta. note that by writing equation (4), we have assumed that the p.u.l. linear charge density lin carried by the conductor, can be expressed by: ( , ) ( ) ( )lin linx y x d y h   = − − (5) 318 g. lucca for the ground we have: 2 2 21 1 1 12 2 ( , ) ( , ) ( , ) 0 v x y v x y k v x y x y   + + =   (6) to complete the formulation, we have to add the boundary conditions at the air-ground interface that is for y=0. the first one is the continuity condition of the potential which yields: 0 1( ,0) ( ,0)v x v x= (7) the second one is the condition relating the continuity of the normal derivative of the scalar potential at the interface between two media having finite conductivities [12]; in our case, such a condition can be written as: 0 1 0 0 1 ( ,0) ( ,0) ˆ r v x v x y y      =   (8) lastly, at infinity, the potential both in air and ground must vanish so that we have: 0 0lim ( , ) 0 lim ( , ) 0 x y v x y v x y → →+ = = (9) 1 1lim ( , ) 0 lim ( , ) 0 x y v x y v x y → →− = = (10) 3. expressions of the scalar potential 3.1. exact expressions in this paragraph we present, in a concise way, the main steps to obtain the solutions of equations (4) and (6). as far as equation (4) is concerned, its solution is given by the sum of a particular solution and a solution of its associated homogeneous equation. a particular solution vp0(x, y) of equation (4) fullfilling the conditions expressed in equations (9) is [13]: ( )2 2 0 0 0 0 0 ( , ) ( ) ( ) 2 lin pv x y k j x d y h      = − + − (11) where k0 is the modified bessel function of second kind and 0 order (see appendix b). for the following, it is useful to write also an integral representation of v0p(x,y) [14] that is:   2 2 0 0 2 2 0 0 0 ( , ) cos ( ) 2 y h k lin p e v x y x d d k       − − − = − −  (12) influence of soil conductivity in capacitive coupling 319 regarding the solution v0h(x, y) of the associated homogeneous equation, by using the separation variable technique and by taking into account the conditions given by equations (9), one has:   2 2 0 ( ) 0 0 ( , ) 2 ( ) cos ( ) k y h hv x y e e x d d      − − − = − (13) being e() a function to be determined from boundary conditions at air-ground interface. in a similar way, the solution of equation (6), that fullfills the conditions expressed by formulas (10), is:   2 2 1 ( ) 1 0 ( , ) 2 ( ) cos ( ) k y h v x y f e x d d      − − = − (14) being f() a second function to be determined from boundary conditions at air-ground interface. the functions e() and f() are solutions of the following linear system obtained by taking into account of equations (12), (13) and (14) and by imposing the boundary conditions represented by equations (7) and (8): 2 2 2 22 2 0 01 2 2 2 22 2 0 01 2 2 0 0 2 2 2 2 0 0 0 1 1 1 2 ( ) 2 ( ) 2 ˆ2 ( ) 2 ( ) 2 k h k hk h lin k h k hk h lin r e e f e e k k e e k f e e                   − − −− − − − −− −  − = −  −   − + − = (15) by solving this system one gets: ( ) 2 2 0 2 2 2 2 1 0 2 2 2 2 2 0 1 1 2 2 2 2 2 2 0 0 1 1 0 () 2 2 2 2 0 1 1 0 ˆ ( ) 4 ˆ ( ) 2 ˆ h k rlin r h k k lin r k k e e k k k e f k k                   − − − − −  − − −  =  − + − −   = − + − (16) by adding equations (12) and (13) and by taking into account of the first relationship expressing e() in formula (16), one can write the expression for the potential in the air v0(x, y): ( ) ( ) ( )   2 2 0 2 2 0 0 0 0 2 2 0 0 0 0 2 2 2 2 0 0 0 1 1 ( , ) ( ) ( ) 2 ( ) ( ) 2 2 cos ( ) 2 ˆ lin o lin k y h lin r v x y k j x d y h k j x d y h e x d d k k                    − − + = − + − + − − + + + + − − + −  (17) notice that the first addend in equation (17) represents the primary contribution of a source having p.u.l. charge density lin placed at coordinates (d, h) in an infinite space, 320 g. lucca having the characteristics of the air, while the second addend represents, in the same space, an image source placed at coordinates (d, -h) and carrying an opposite p.u.l. charge density -lin. the role played by the second addend is to simulate the presence of the ground modelled as a perfect conductor; notice that both the terms do not depend on the soil conductivity 1. on the contrary the third addend in equation (17) depends on 1 and it can be considered a further correction term related to the presence of the ground. coming to the potential in the ground v1(x, y), by substituting the expression for f() contained in formula (16), one obtains:   2 2 2 2 0 1 1 2 2 2 2 0 0 0 1 1 2 ( , ) cos ( ) 2 ˆ k h k y lin r e e v x y x d d k k          − − − = − − + −  (18) 3.2. closed form approximated expressions it possible to give some closed form approximated expressions for both v0(x, y) and v1(x, y); the usefulness of such approximated expressions is related to the difficulty in calculating the scalar potential by means of the exact formulas given by expressions (17) and (18); the problematic in calculating the two integrals contained in them (sommerfeld integrals) consists in the fact they slowly converge and the integrands have a strongly oscillating behaviour; thus, they may require a certain computational effort especially if they have to be evaluated inside the same program many times in correspondence of different points and/or different frequencies. for such a reason it is worthwile to have at disposal also easier expressions that may be used in practical applications. as far as v0(x, y) is concerned and by considering the third addend, we have that in most of the integration range for  the following approximation holds: 2 2 2 2 0 1k k −  − (19) thus, we may write: ( )   ( )2 2 0 2 2 0 0 0 2 2 2 2 2 2 2 2 0 0 1 1 0 1 1 2 ( ) ( )2 cos *( ) ˆ ˆ k y h r r k j x d y he x d d k k k k              − − + − + − −  − + − − + −  (20) and consequently, by substituting (20) in place of the third term in formula (17), we obtain the following approximate expression for v0(x, y): ( ) ( ) 2 2 0 0 0 0 0 2 21 0 0 0 1 0 ( , ) ( ) ( ) 2 ˆ 1 ( ) ( ) ˆ 1 2 lin app linr r v x y k j x d y h k j x d y h             − + − + − − − + + + (21) the first term in equation (21) represents the primary contribution of the source, while the second term represents the contribution of a image source placed in specular position with respect to the air-ground interface; the intensity of the image source lin is reduced of a factor r given by: influence of soil conductivity in capacitive coupling 321 1 1 ˆ 1 ˆ 1 r r r   − = + (22) notice that the factor r still depends on , 1 and r1 (see equation 3). it is possible to further simplify the relationship given by equation (21) obtaining the expression that could be directly derived by applying the well known method of images [15]. in fact, for low frequencies and in the ordinary range of values for 1 and r1 we have that: 2 2 0 0 ( ) ( ) 1 1j x d y h r   − +    (23) therefore, by substituting in formula (21) the modified bessel functions k0 with its small argument approximation [16] (see also appendix b formula (b4)) and by using the second relationship in formula (23), we obtain the following expression v0mi(x,y) for the potential in air: 2 2 0 2 2 0 ( ) ( ) ln 2 ( ) ( ) lin mi x d y h v x d y h    − + +  =  − + −   (24) notice that this expression does not depend on frequency f, on ground conductivity 1 and on ground permittivity 1. as far as v1(x, y) is concerned, starting from equation (18) we have that in most of the integration range for , the approximation expressed by formula (19) holds; thus, we obtain the following equation for v1app(x, y): ( )   ( ) 2 2 1 1 2 2 0 0 1 1 2 2 0 0 0 1 0 1 2 ( , ) cos ( ) 2 ˆ(1 ) 2 ˆ ( ) ( ) ˆ2 1 k y h lin app r lin r r e v x y x d d k k j x d y h               − − = − = + − = − + − +  (25) notice that this expression still depends on frequency f, on ground conductivity 1 and on ground permittivity 1. 4. comparison among different expressions in this section we present some comparisons among the different expressions for the scalar potential previously presented. the integrals appearing in formulas (17) and (18) have been numerically evaluated by means of the trapezoidal rule by using an extremely small integration step equal to 10-5 covering the integration range [0, 8]; we have verified that the contribution to the integral outside that integration range was negligible. as mentioned before, the comparison is oriented to very low frequencies and covers the range [10hz, 10khz]; in this interval we did not find problems of numerical instability concerning the integrals in formulas (17) and (18). firstly, let us define the per cent relative difference between the exact formula and the corresponding approximate one; thus we have for the air two cases: 322 g. lucca 0 0 0 0 ( , ) ( , ) % ( , ) 100 ( , ) app app v x y v x y x y v x y  −   =     (26) 0 0 0 0 ( , ) ( , ) % ( , ) 100 ( , ) mi mi v x y v x y x y v x y  −   =     (27) while, for the ground, we have: 1 1 1 1 ( , ) ( , ) % ( , ) 100 ( , ) app app v x y v x y x y v x y  −   =     (28) we have considered a source placed at d=0m and h=20m and soil parameters having frequency dependence according to the formula of visacro-alipio (see appendix a) and characterized by different values of 100hz (100hz is the value of soil conductivity for f=100hz) i.e.: 10-4s/m, 10-3s/m, 10-2s/m and with relative dielectric constant r1=1921. moreover, in the examples that follow, we have reasonably assumed that in the range [0hz, 100hz] the value of the soil conductivity is constant and equal to 100hz. in fig. 2 the values of %0 app and %0 mi have been plotted versus lateral distance from the source for different values of 100hz and for f=50hz. fig. 2 percent relative difference versus lateral distance for different values of 100hz; f=50hz, y=1m fig. 2 shows that at 50hz both the approximations are very good; the quantities %0 app and %0 mi show an increasing trend by increasing the distance from the source and by decreasing the value of 100hz. 1 this is the suggested value coming from the visacro-alipio formula for frequencies lower than 10khz influence of soil conductivity in capacitive coupling 323 in fig. 3 the values of %0 app and %0 mi have been plotted versus the frequency, for different values of soil conductivity and for x=50m, y=1m. by looking at fig. 3, we can see that for soils having medium-high values of 100hz both the approximations are very good till to some khz, while for soils of very low values of 100hz both the approximations are very good till to some hundreds of hz. in fig. 4 the values of %1 app have been plotted versus lateral distance from the source for different values of 100hz and for f=50hz. fig. 3 percent relative difference versus frequency for different values of 100hz; x=50m, y=1m fig. 4 percent relative difference versus lateral distance for different values of 100hz; f=50hz, y=-1m 324 g. lucca fig. 4 shows that at 50 hz the approximation is very good especially for medium-low values of 100hz; the differences tend to increase by increasing the distance from the source; such a trend is much more evident for high values of 100hz. in fig. 5 the values of %1 app have been plotted versus the frequency, for different values of 100hz and for x=10m, y=-1m. fig. 5 percent relative difference versus frequency for different values of soil 100hz; x=10m, y=-1m. by looking at fig. 5, we can see that for soils having high values of 100hz the approximation is good till to about 1 khz, while for soils having medium-low values of 100hz the approximations are very good till to 10 khz. 5. capacitive coupling between power line and pipeline 5.1. basic assumptions and formulas in this paragraph we present two examples of calculation of capacitive interference generated by an high voltage (hv) power line on a pipeline; in order to have only capacitive coupling, we consider the ideal case where the hv line axis is exactly perpendicular to the pipeline (see fig. 6) so that no inductive interference exists; moreover, we suppose that the hv line is under normal operating condition so that no currents, injected into soil through the tower grounding electrodes as in case of fault of a phase to ground, are present and consequently neither conductive coupling exists. in both the examples that follow, the inducing source is represented by a tri-phase 380kv-50hz line provided with two shield wires while the pipeline, having length l, shall be considered overhead (height h>0) in the first example and buried in the soil (burial depth h<0) in the second example. influence of soil conductivity in capacitive coupling 325 fig. 6 sketch of hv line and pipeline layouts the pipeline has no grounding points and the voltage induced along it u=u(x) can be calculated by means of the following formula (see [5]) that represents the analytical solution of a two-wire transmission line of length l, open circuited at both the terminations and drived by a distributed ideal current generator j(x) (see next formula (33)). 2 1 ( ) ( ) ( ) cosh( ) sinh( ) g l u x g x x l   = + (29) where  is the propagation constant of the pipeline circuit with ground return given by: z y = (30) being z and y respectively the p.u.l. impedance and admittance of the circuit itself. the quantities g1(x) and g2(x) are given by [5]: 1 0 0 ( ) ( ) ( ) 2 2 x xx x a ae z e z g x j e d j e d y y        − −= + −  (31) 2 0 0 ( ) ( ) ( ) 2 2 x xx x a ae z e z g x j e d j e d y y        − −= − −  (32) and ( ) ( , )j x yv x h= (33) is the p.u.l. current generator applied to the pipeline-ground circuit that models the capacitive influence generated by the hv line. in fact, in equation (33) v=v(x, h) is the potential generated at the location of the pipeline axis by the power line that can be calculated according to the formulas presented in the previous section 3. 326 g. lucca 5.2. overhead pipeline the case of an overhead pipeline in proximity of a hv powerline and with no connections to ground is often encounted before the burial operations of the pipe. for example a relatively short conductor, such as a single joint of line pipe supported by a nonmetallic sling or on a rubbertired vehicle. thus, we consider a single joint of pipe having length l=20m and placed at height 1.5m above ground. by calculating the potential in the air produced by the hv line according to the formulas presented in par. 3 and applying formula (29) we obtain a voltage practically constant along the whole length of the pipe. in table 1, the induced pipe voltage is shown for different values of 100hz that, as already mentioned, we have assumed to be valid also for f=50hz so that 1=100hz. table 1 induced voltage for different value of soil conductivity; overhead pipeline 1 [s/m] voltage [v] 10-2 124.93 10-3 124.95 10-4 125.21 10-5 129.01 if one applies the method of images to calculate the potential in air, the result for the induced voltage along the pipe is a constant value equal to 124.95v that does not depend on 1. in contrast to the method of images, the results in table 1 show a very weak but non-zero dependence on the soil conductivity and the values of induced voltage increase by decreasing the soil conductivity. 5.3. buried pipeline we consider a buried pipeline section 4km long between two insulating joints; in such a way one can study this portion of pipe ignoring the remaining part of the the route. also in this case, calculations show that the induced voltage along the pipe is practically constant and the results for different values of soil conductivity are shown in table 2. table 2 induced voltage for different value of soil conductivity; buried pipeline soil conductivity 1 [s/m] voltage [v] 10-2 0.0007 10-3 0.021 10-4 0.393 10-5 5.91 by looking at table 2 we can notice the very small values for the induced voltage; that explains why in practical applications the capacitive coupling between power lines and buried pipelines is usually ignored. anyway, we can notice that the influence of the soil actually exists with an increasing trend that follows the decrease of the conductivity. influence of soil conductivity in capacitive coupling 327 6. conclusions in this paper, we have presented a study about capacitive coupling, at power frequencies, between power lines and pipelines, that differently from what commonly appears in literature, does not model the ground as perfect conductor but it takes into account its conductivity and permittivity. the results obtained by comparing the model of perfectly conducting ground and the model of soil with non-zero conductivity show that the differences are very small at power frequencies. nevertheless, in applications where higher frequencies are involved (higher harmonics, transients), the model here presented seems more adequate because in these cases the influence of the ground conductivity and permittivity is not so negligible. appendix a according to the work of visacro-alipio [10-11] about the frequency dependence of soil parameters relevant to lightning response of grounding electrodes, one has that ground conductivity and relative permettivity are not constant quantities but depend on the frequency. on the basis of many measurements and subsequent analysis, the authors found an empirical formula able to describe their frequency dependence in the range [100hz-4mhz]. by using the resistivity , instead of the conductivity , they proposed the following expressions:   1 6 0.73 0.65 100 100( ) 1 [1.2 10 ]( 100)hz hzf f   − −= +   − (a1) 3 0.4 1 7.6 10 1.3 10 ( ) 192.203 10 r f f khz f f khz  −   +  =   (a2) in formula (a1) the quantity 100hz is the value of soil resistivity for f=100hz; in the rest of our paper, we used, for convenience, its reciprocal 100hz. appendix b we report here from [17] the explicit formula for k0 that is the modified bessel function of second kind and zero order. if z is a complex number with |arg(z)|</2, k0(z) is given by the following ascending series: 2 22 0 0 2 2 3 2 3 11 1 1 44( ) ln ( ) 1 2 2(1!) (2!) 1 1 1 4 1 2 3 (3!) zz k z z i z z             = − + + + + +                  + + + +    (b1) where =0.57721.. is the euler-mascheroni constant and i0(z) is the modified bessel function of first kind and zero order that is expressed by: 328 g. lucca 2 0 0 1 4 ( ) ! ( 1) k k z i z k k  =       =  +  (b2) in formula (b2),  is the gamma function which, for integer values of the argument, becomes the factorial function that is: ( 1) ! 0,1, 2,k k k + = = (b3) for small values of the argument z, formula (b1) simplifies into: 0 1 ( ) ln 2 k z z     = − +      (b4) references [1] en 50443, effects of electromagnetic interference on pipelines caused by high voltage a.c. electric traction systems and/or high voltage a.c. power supply systems, cenelec, 2012. [2] itu-t, recommendation k.68, operator responsibilities in the management of electromagnetic interference by power systems on telecommunication systems, 2008. [3] cen en 15280, evaluation of a.c. corrosion likelihood of buried pipelines applicable to cathodically protected pipelines, 2013. [4] cigre, ac corrosion on metallic pipelines due to interference from ac power lines—phenomenon, modelling and countermeasures; cigre working group c4. 2.02, paris, france, 2006. [5] itu-t, directives concerning the protection of telecommunication lines against harmful effects from electric power and electrified railway lines, capacitive, inductive and conductive coupling: physical theory and calculation methods, vol. iii, itu, 1989. [6] cigre, guide on the influence of high voltage a. c. power systems on metallic pipeline, cigre, 1995. [7] epri, power line fault current coupling to nearby natural gas pipelines, analytic methods and graphical techniques vol. 1, epri 1987. [8] d. şteţ, d. d. micu, l. czumbil, l. darabant and a. ceclan, "simulation of interference between power lines and gas pipelines in unbalanced phase currents state", compel: int. j. comput. math. electr. electron. eng., vol. 31, нo.4, pp. 1178-1189, 2012. [9] d. şteţ, l. czumbil and d. d. micu, evaluation of electromagnetic interferences affecting metallic pipelines in pipeline engineering-design, failure, and management, intechopen, 2022. [10] s. visacro and r. alipio, "frequency dependence of soil parameters: experimental results, predicting formula and influence on the lightning response of grounding electrodes ", ieee trans. power del., vol. 27, pp. 927-935, april 2012. [11] r. alipio and s. visacro "frequency dependence of soil parameters: effect on the lightning response of grounding electrodes ", ieee trans. electromagn. compat., vol. 55, pp. 132-139, feb. 2012. [12] c. t. a. johnk, engineering electromagnetic fields and waves. john wiley & sons, 1975, chapter 4, pp. 242-244. [13] a. n. tichonov and a. a. samarskij, equazioni della fisica matematica. edizioni mir, 1981, chapter 7, pp. 507-508. [14] i. s. gradshteyn and i. m. ryzhik, table of integrals, series and products. academic press, 2007, p. 491. [15] j. d. kraus, electromagnetics. mc graw-hill, 1953, chapter 2, pp 79-80. [16] j. spanier and k. b. oldham, an atlas of functions. hemisphere publishing corporation, 1987, chapter 51, p. 505. [17] m. abramowitz and i. a. stegun, handbook of mathematical functions with formulas, graphs, and mathematical tables. new york: dover publications inc, 1972, chapter 9, p. 375. 10918 facta universitatis series: electronics and energetics vol. 36, no 2, june 2023, pp. 171-188 https://doi.org/10.2298/fuee2302171k © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan and wimax applications using dgs lalit kumar, vandana nath, bvr reddy university school of information, communication and technology, guru gobind singh indraprastha university, new delhi, india abstract. microstrip antennas have become ubiquitous in today's wireless communication world due to their low profile, low cost, and simplicity in fabricating on circuit boards. however, poor performance characteristics, such as limited bandwidth, low power handling capabilities, and low gain, limit their applicability in various instances. path loss will be substantial in 5th generation (5g) wireless communication due to the utilization of high-frequency bands. a high-gain antenna with a small size is necessary to address this issue. a compact tri-band, slotted monopole antenna with high and consistent gain employing a defected ground plane structure (dgs) has been investigated and implemented in this study. this proposed antenna uses three inverted l-shaped stubs connected to the radiating element to cover the desired bands while keeping the antenna size small. the designed antenna has two key characteristics: (i) wide bandwidth and (ii) reasonable gain. the antenna covers 2.45 and 5.6 ghz wlan, 2.4 ghz wi-fi, 2.5 and 5.2 ghz wimax and 3.7 ghz sub-6 ghz of 5g for mobile communication. the overall substrate size of the antenna is 30 × 17 × 1.6 mm3and the electrical dimensions are 0.49 λl × 0.28 λl × 0.026 λl, where λl is the free space wavelength at 2.45 ghz. the measured reflection coefficient (s11 < -10db) covers 2.4 2.52 ghz (bandwidth 112 mhz) and 3.4 4.1 ghz (bandwidth 700 mhz) and 5.2 6.6 ghz (bandwidth 1359 mhz) with a fractional bandwidth of 5.1 % at lower frequency band, 18.6 % at mid frequency band and 23.7 % at high frequency band. a prototype antenna has also been developed using an inexpensive, low-profile 1.6 mm thick fr-4 (εr = 4.4) substrate. the measured peak gains achieved are 1.35 db at 2.45 ghz, 2.55 db at 2.65 ghz and 3.8 db at 5.5 ghz. the simulated results have been validated against actual experimental measurements, and the outcomes are consistent and match with certainty. the proposed antenna design is very compact and easy to fabricate due to the absence of vias. key words: 5g sub-6 ghz, slotted patch antenna, monopole, multiband, wide bandwidth received july 19, 2022; revised september 19, 2022 and october 15, 2022; accepted october 18, 2022 corresponding author: lalit kumar university school of information, communication and technology, guru gobind singh indraprastha university, new delhi, india e-mail: lalitkr12@yahoo.com 172 l. kumar, v. nath, bvr reddy 1. introduction the advancement of mobile technology and the continuously reducing size of mobile devices has necessitated antenna designers to design antennas that can operate across multiple frequency bands while still compact and having adequate gain and efficiency. antennas with multiple frequency bands and small sizes can be employed in mobile devices. furthermore, high-gain antennas are highly beneficial for satellite communication applications. broadband antennas have also grown in popularity in recent years. however, while the microstrip patch antenna offers the advantages of low cost and tiny size, it has the limitations of poor gain and narrow bandwidth. other requirements include a low profile, simple design, ease of fabrication and low cost. these make planar microstrip patch antennas a better and more popular choice [1]. in addition, it is challenging to cover multiple bands while keeping the antenna size minimal with adequate bandwidth and gain [2]. the sub-6 ghz frequency offers high-speed data transfer over long distances owing to its low latency and high traffic density. these features of the sub-6 ghz frequency band are suitable for access points (ap) and base stations (bs) communication for machine-tomachine(m2m), internet of things (iot) and device-to-device (d2d) technologies, along with existing wimax, wlan, and lte bands [3]. a practical solution for such a system design is a multiband antenna with a frequency band selection capability. several printed monopole antennas with different geometries are demonstrated with a reduced size while increasing bandwidth to meet wlan, wimax, and 5g sub-6 ghz technology standards [3]. therefore, modifying an antenna's geometry to occupy a small volume is necessary to reduce its overall size. it is worth mentioning that stub matching and slotting techniques are widely used to maintain the compactness of the antenna. the stubs increase the current path length to get a fundamental resonating mode [4-8]. for improving impedance matching in multiband operations while reducing antenna volume, slots of different types and geometries are implemented [9-13]. in the present era of antenna design, one of the most important considerations is how to maximise the bandwidth of compact antennas. therefore, many researchers have suggested diverse techniques to develop a small antenna with broadband characteristics with multiband operations. some proposed methods include a thick substrate, shorting pins, active and passive devices, stacked patches, various feeding mechanisms and an impedance-matching network. defected ground structure (dgs) is one such type of bandwidth enhancement technique where some defects are introduced, or slots are carved in the ground plane to suppress the cross-polarisation radiation, reduce the antenna size and achieve the desired performance [14-18]. m. karthieyen et al. [7] proposed a tri-band antenna using t-shaped strips and rectangular slot defects at the ground side. the proposed antenna operates at three frequency bands, viz. 2.47-2.77 ghz, 3.3-3.7 ghz and 5.10-6.62 ghz. the fr-4 substrate dimensions are 33 × 17 × 1.6 mm3. the average gain ranges from 2 to 3.9 db, but the efficiency ranges from 60% to 80%, covering wlan and wimax bands only. using an arc-shaped dgs, a planar monopole antenna for triple-band operation is proposed in [11] for wireless lan and wimax bands. the proposed antenna combines monopole rings and a defective ground plane. monopoles are made up of a rectangular ring and a rectangular patch connected by a straight metal strip that may create lowerand middle-frequency bands and omnidirectional radiation patterns. the substrate is fr-4 with 1.6 mm thickness, but a relatively larger antenna size is 36 × 39 mm2. antenna resonates at 2.45 ghz, 3.55 ghz and 5.5 ghz and 1.22 db, 2.15 db and 4.06 db gain and 88%, 99% and 94% efficiencies in the respective triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 173 bands. a small slotted monopole antenna is presented by h. ahmed et al. [19] for wireless lan and wimax frequency bands. resonance in three bands has been achieved by etching a rectangle patch with bevel, pi, and inverted l-shaped slots. the antenna is 27.5 × 20 mm2 in size and operates in three bands: 2.37 2.52 ghz, 3.35 3.90 ghz, and 4.97 7.85 ghz. the antenna radiation pattern is almost omnidirectional, having 90 % efficiency and 4 dbi gain across the three wlan and wimax frequency ranges. in [20], a multiband monopole antenna is presented using a rectangular patch etched with two crossed cshaped slots and two e shaped slots in a curtailed ground plane. the total dimension of the antenna is 29 × 36 × 0.8 mm3, and the antenna casts on an fr-4 substrate. the antenna achieves a maximum gain of 2.5 dbi and maximum efficiency of 98 % at a higher frequency band, and it covers both the wireless lan and wimax frequency bands. but antenna has a comparatively lower gain and larger size. defected ground structure (dgs) has been utilised in microstrip antennas to increase the bandwidth and gain and suppress higher mode harmonics, mutual coupling between neighbouring elements, and cross-polarisation to improve the radiation properties of microstrip antennas. for wlan / wimax applications, a. ibrahim et al. [21] have developed an antenna using dgs for tri-band operations. the antenna has relatively lower bandwidths of 197 mhz, 118 mhz, and 90 mhz and resonates at three frequencies: 2.4 ghz, 3.5 ghz, and 5.8 ghz. the substrate is fr-4, with a dielectric constant of 4.3 and larger dimensions of 34 × 30 × 1.6 mm3. in [22], a triple-band antenna structure using a defective ground plane is suggested for use in wlan, wimax, and wi-fi applications. the proposed antenna achieves a higher peak gain of 3.88 dbi, 3.87 dbi, and 3.83 dbi and comparatively fewer impedance bandwidths of 14.61%, 5.42%, and 5.40 %, respectively. the antenna resonates at 2.47 ghz, 3.55 ghz, and 5.55 ghz. fr-4 substrate is used to fabricate the antenna. five split ring resonators (srrs) units are fabricated on the ground plane, complicating the antenna design. the constructed antenna is suitable for triple-band applications because it combines monopole and srrs. the total antenna size is 83 × 56 × 1.56 mm3. a complex metamaterial (mtm) based monopole antenna design is proposed by m. kasmaei et al. [23], which can function in 3g, wlan, and wimax frequency bands. the antenna covers 2.45 and 5.2 wlan bands (2.02 2.62 ghz and 5.12 5.34 ghz) along with 3.5 ghz wimax (3.48 4.56 ghz) bands. the antenna dimensions are also comparatively larger, 45 × 40 × 1mm3, built on an fr-4 substrate with a relative permittivity of 4.4. the impedance bandwidths of 600 mhz, 1080 mhz, and 220 mhz and peak gain of 2.23 db, 2.81 db and 1.91 db are obtained at 2.02 2.62 ghz, 3.48 4.56 ghz, and 5.12 5.34 ghz, respectively. a significant amount of research has been conducted on approaches for increasing bandwidth and gain in hexagonal-shaped patch planar antennas [24-27]. the designs presented by the research community have considerably improved the outcomes by utilising fractal approaches, various feeding strategies such as cpw/coaxial feeding, and srr (split-ring resonator). however, these techniques make the antenna structure large and bulkier with a complex design. a small 5g reconfigurable antenna for four frequency bands, 2.4 ghz, 3.1 ghz, and 3.4 ghz, presented in [24] provides frequency selectivity through a grouped element switch. the proposed monopole antenna has a small footprint, 37 × 35 × 1.6 mm3, built on an fr-4 substrate with relative permittivity of 4.3. the proposed configuration can function as an omnidirectional antenna with a bandwidth of 200 mhz, 682 mhz, 590 mhz and 960 mhz at 2 ghz, 3.4 ghz, 2.45 ghz and 3.1 ghz, respectively. the antenna achieves a peak gain of 1.95 db only and an efficiency greater 174 l. kumar, v. nath, bvr reddy than 85%. a multiband hexagonal patch antenna using an fr-4 substrate consisting of a circular slot on a radiating element and four rectangular slots is proposed in [26]. the antenna resonates at 2.40 ghz, 5.03 ghz, and 8.67 ghz, covering wlan, wimax and x-band. the total antenna dimension is 35 × 30 × 1.2 mm3 and attains a peak gain of 1.63 db, 1.38 db and 2.95 db in the respective lower, middle and higher bands. a stubloaded, hexagonal ring patch antenna excited through a triangular shape coplanar waveguide (cpw) transmission line is presented in [27]. the antenna covers wlan/wimax and itu bands from 2.9 to 5.9 ghz and 7 to 10 ghz. the substrate is made of fr-4 with a thickness of 0.8 mm and a total dimension of 20 × 20 mm2. for multiband operation, stubs are attached to the slotted hexagonal patch. but the paper does not discuss the antenna's gain and efficiency parameters. although the designs discussed above use the same substrate material, fr-4, they utilise distinct patch and ground geometries and are constructed using different bandwidth enhancement methods. as a result, most antennas are ineffective in one or two operating bands and have comparatively large sizes and moderate gains with complex antenna designs. this article investigates a wide-slot hexagonal shape patch using the dgs plane. a defected ground structure (dgs) reduces antenna size, improves radiation performance, and suppresses cross-polarisation. slotting is also used, which decreases the antenna volume while increasing the current route length and is also used to maintain the patch's size. the antenna's distinctive feature is its ability to operate across multiple bands using stubs while retaining a compact size and simple structure. the present article evaluates the antenna's performance using frequency domain properties such as gain, reflection coefficient, and radiation patterns. the proposed antenna has adequate efficiency and high gain with compactness while covering wireless lan, wimax, and 5g sub-6 ghz frequency bands with a simple design that is less bulky, easy to fabricate, and easy to integrate with other devices. section 2 of the paper discusses the theoretical aspects of the proposed antenna. antenna working using vector e-field and current distribution has been explained in section 3. an equivalent electric model of the proposed antenna using ads software is described and compared with the proposed antenna reflection coefficient (s11) in section 4. simulated and measured results are discussed in section 5, and finally, the paper is concluded in section 6. 2. theoretical analysis the proposed monopole antenna structure is straightforward and has a hexagonal shape patch and an equivalent wide hexagonal slot etched through the main patch. three inverted l-shaped stubs are added to generate the desired resonating frequencies. an inverted lstub is attached to one of the main hexagon's outer edges, and the other two are within the slotted patch's vicinity. a defected ground plane is etched on the other side of the substrate. there is no ground on the opposite side of the main radiating element, mainly covering the feed line. the following section describes the theoretical dimension calculation for patch, stub and feed lines. for the wideband antenna, the lower band edge frequency is the fundamental design parameter for monopole antennas rather than the resonance frequency [28]. the lower edge frequency can be determined by comparing the area of the monopole antenna to that of a cylindrical monopole antenna with a comparable height, 'l,' and radius, 'r' [28]. triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 175 f le = 7.2 (lc + p + rc) k ghz (1) where fle = lower edge frequency rc = radius of the cylindrical monopole antenna in cm lc = length of the cylindrical monopole antenna in cm p = probe length in cm (distance between the partial ground plane and patch vertex) k = 1.15 for the fr-4 substrate having a thickness of 1.6 mm [28]. the patch is fed at its vertex, and the values of above defined lc and rc are designed as given below: lc = 2 * lh (2) rc = √3*lh (8 * pi) (3) where lh is the side length of the hexagon, putting these values in equation (1) and using the value of p and k, the lower edge frequency can be calculated. the first hexagonal patch is constructed with fle = 3.6 ghz to keep the antenna size small. a microstrip transmission line of 50 ω has been used to feed the hexagon patch. the following equation shows a relation between the microstrip line's size and characteristic impedance zc [29]. zc = 120 * pi (√εreff) { w h +1.393 + 0.667*ln (w h +1.444)} (4) where h is the depth and w is the breadth of the dielectric substrate microstrip feed line. εreff is the effective dielectric constant and is calculated as: εreff = εr + 1 2 (5) the current path length has to be extended to generate the fundamental mode in the desired frequencies. therefore, stubs are used whose length determines the resonating frequency. the lengths of the stubs may be changed to obtain the desired resonance frequency and can be adjusted separately without affecting the main patch characteristics. three l-subs are attached with the main patch to cover wi-fi/wlan and wimax frequency ranges. the stub length is optimised to be close to the quarter wavelength of the resonant frequency for fl=2.45 ghz and fh=5.5 ghz, using equation (6-7) [29]. l1@2.45 = c 4* fl √εreff (6) l2@5.5 = c 4* fh √εreff (7) 2.1. antenna structure the final patch antenna with a dgs plane on the ground side and a slotted hexagon antenna with inverted l-stubs are shown in figure 1 from the top, rear, and side views. the epoxy substrate having εr = 4.4 (relative permittivity) and δ= 0.02 (loss tangent) with a thickness of 1.6 mm has been used for fabrication. table 1 demonstrates the optimal geometric dimensions of the presented antenna. the width of the three inverted l-strips is kept fixed. 176 l. kumar, v. nath, bvr reddy the fundamental configuration of the proposed antenna started with a hexagon patch, whose dimensions are obtained using equation (1). the patch has been connected to a 50 ω microstrip feed line at one of its vertexes. figure 2(a) shows the initial stage designed antenna that resonates at 4.2 and 7.5 ghz frequencies, has a lower cutoff frequency at 3.66 ghz and has an overall 5.33 ghz impedance bandwidth. on the opposite side of the substrate, the defective ground plane is etched, covering the maximum of the feed line, and no ground exists below the main radiating patch. a greater bandwidth has been attained because of the defected partial ground plane. fig. 1 final proposed antenna fig. 2 a) stage 1; b) stage 2; c) stage 3 of the antenna z y x triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 177 table 1 optimised simulated dimensions of the presented antenna symbol dimension (mm) symbol dimension (mm) symbol dimension (mm) lsub 30 wsub 17 lg 9 lf 10 wf 2.8 d1 1 ls 9 wp 15.6 h 1.6 lc1 4.5 wc2 2.5 d 0.5 p1 7 p2 2 wc1 2.3 s 6.86 s1 14 b 1.5 a 14.5 finally, at stage 3, two inverted l-stubs with length l2 = p1 + p2 are extruded in the region of the slotted patch to generate a resonance peak in the fh = 5.5 ghz band, as illustrated in figure 2(c). for greater bandwidth at higher frequency bands, final slots are carved on the ground plane's corner side. the hfss v.19 simulator is used to model the proposed antenna. reflection coefficient (s11) characteristics for all three stages are shown in figure 3. fig. 3 reflection coefficient simulated curves of three phases of the presented antenna 3. antenna operation simulated surface current concentration and vector e-field at all three resonating frequencies are depicted in figures 4 and 5, which makes the antenna's working easily understood. the feed line, patch edges, and ground plane edges have the maximum current density. the neighbouring modes must be overlapped with one another to create a broad frequency spectrum. it can be seen from the surface current concentration on the top inverted l-shaped strip at 2.45 ghz and in the middle-inverted l-shaped strip at 5.5 ghz is maximum. from the vector-e plot, it can be concluded that the antenna is linearly polarised and has maximum radiation in the desired direction at desired resonating frequencies. thus, from the reflection coefficient characteristic (s11) curves and surface current distributions, the purpose of each extended l-strip of the presented antenna can be understood. 178 l. kumar, v. nath, bvr reddy fig. 4 simulated current distribution (i) at 2.45 ghz, (ii) at 3.65ghz, and (iii) 5.5 ghz fig. 5 simulated e-vector plot (a) 2.45 ghz, (b) 3.65 ghz, and (c) 5.5 ghz 4. modelling of equivalent circuit the analogous circuit model reveals the characteristics of resonant frequencies and their significance to input impedance. as seen in figure 6, ads software is used to implement the designed antenna's equivalent circuit model. the antenna reflection coefficient (s11) response is used to create the equivalent circuit model. the reflection coefficient (s11) below 10 db is optimised to an identical parallel rlc resonant circuit model using foster's canonical form. figure 7 illustrates the contrast between the reflection coefficient (s11) obtained from hfss and ads software. the results of the hfss simulation and ads are slightly different. the values of capacitors, inductors, and resistors are varied to satisfy the proper response, which causes the shift in resonance frequencies according to the hfss simulation results. it can be seen that the results from hfss and ads are very well and fairly matched. however, the values at higher frequencies deviate because the equivalent circuit model is roughly compared to 50 hz. the equivalent circuit-derived values of rlc circuit elements are tabulated in table 2 for the desired frequency bands. it can be concluded from the above discussion that the surface current distribution, vector e field, and equivalent circuit model provide details of the working of the presented antenna and good insight at resonant frequencies. triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 179 fig. 6 rlc equivalent circuit modelled in ads fig. 7 a comparison of the hfss and ads reflection coefficients table 2 equivalent rlc components for the antenna parameters prlc1 prlc2 prlc3 prlc4 inductor (nh) 0.133 0.26 0.639 0.703 capacitor (pf) 4.8 2.55 5.90 1.913 resistance (ohms) 53.43 28.69 197.6 90.5 l1 (nh) 2.3 c1 (pf) 0.428 r1 (ohm) 12.4 5. parametric analysis the antenna is subjected to a parametric analysis to determine its ideal dimensions and to improve its performance. this section shows the effects of adjusting the antenna's different geometries. an inverted l-stub length (l1=s1+s) is attached to the upper side of the radiating element to cover the 2.45 ghz frequency band. the lowest resonating 180 l. kumar, v. nath, bvr reddy frequency can be altered by changing the l-stub length without affecting the other resonant frequencies, as shown in figure 8(a). two inverted l-stubs length (l2= p1+p2) are appended in the vicinity of the hexagonal slot for resonating the antenna at the 5.5 ghz wlan band. by changing the length of these l-stubs, the resonating frequency for the 5.5 ghz wlan band can independently be altered without affecting the lower and mid-frequency bands. figure 8(b) depicts the change in the resonating frequency by altering the length p2. three slots have been etched on the partial ground plane on the other side of the substrate the centre slot just below the feed line whose width wc1 affects the crust value of the reflection coefficient. figure 8(c) shows the maximum value of s11 is at optimised width, describing a good matching at resonating frequency at all three bands. figure 8(d) shows the effect on resonating frequencies at middle and higher frequency bands when the width of ground slots at edges varies (wc2). besides the exception optimised width, the middle and higher resonating frequencies shift toward their higher side with lesser matching as the width increases. the lower frequency band is least affected by the width wc2 except for its impedance matching changes. (a) variation of lower resonating frequency (2.45ghz) w.r.t. l1 (b) variation of higher resonating frequency (5.5 ghz) w.r.t p2 triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 181 (c) variation in s11 vs. wc1 (d) variation in s11 vs wc2 fig. 8 parametric analysis by altering. (a) l1, (b) p2, (c) wc1, (d) wc2 6. simulated and measured results the focus of this section is the comparison of experimental and simulated outcomes. a prototype antenna is constructed on an fr-4 substrate using the dimensions of table 1. a female edge-mounted sma connector with 50 ω impedance has been used for the excitation of the antenna. the fabricated antenna is tested experimentally, and the findings are compared to the simulated outcomes of the antenna. figure 9(a-b) shows the fabricated (a) (b) fig. 9 fabricated antenna (a) top patch, (b) bottom ground 182 l. kumar, v. nath, bvr reddy antenna's top and bottom surfaces. the antenna characteristics are measured on the vna kc901c model from measall technology. figure 10 (a) and (b) depict the simulated reflection coefficient (s11) and simulated results against the measured one, and figure 11(ad) shows the measured reflection coefficient (s11) parameter for all three frequency bands. (a) (b) fig. 10 (a) hfss generated reflection coefficient (s11) (b) simulated vs measured s11 the tiny size, fabrication process errors, sma connection quality, and soldering faults contribute to the simulated and actual results variances. table 3 compares the resonant frequencies and bandwidths of simulated with measured results. table 3 measured vs simulated resonant frequencies and bandwidths simulated measured resonant frequency (ghz) bandwidth (mhz) resonant frequency (ghz) bandwidth (mhz) lower frequency band 2.45 112 2.42 280 mid-frequency band 3.78 710 3.7 249 high-frequency band 5.5 1359 5.7 1105 figure 12 (a-e) illustrates the experimental and simulated far-field radiation patterns at the low, mid, and high resonance frequencies in the h-plane (φ=90°) and the e-plane (φ= 0°). a bi-directional e-plane and omnidirectional h-plane configuration are observed in all three bands. due to the increased frequency, the radiation patterns in both planes become distorted and less omnidirectional in h-plane at higher frequencies. such distortions happen at high frequencies because of the stimulation of higher-order modes. however, the measured radiation patterns are relatively stable in both planes. triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 183 (a) (b) (c) (d) fig. 11 measured reflection coefficient (s11 in db) a) total bandwidth, b) lower frequency band, c) mid frequency band, d) higher frequency band 184 l. kumar, v. nath, bvr reddy (a) h-plane (at phi=90°) at 2.45 ghz (b) e-plane (at phi=0°) (c) h plane (at phi=90°) at 3.65 ghz (d) e plane(at phi=0°) triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 185 (e) h-plane (at phi=90°) at 5.5 ghz (f) e-plane (at phi=0°) fig. 12 simulated and measured e-plane and h-plane radiation patterns at resonant frequencies figure 13 (a) depicts the simulated and measured gain fluctuation. the gain of the proposed antenna is calculated using the gain transfer technique and a standard horn antenna. the measured peak gain is 1.35 db at 2.45 ghz, 2.55 db at 3.65 ghz and 3.8 db at 5.5 ghz. the gain value increases as the frequency increases. thus, the effective aperture grows in proportion to the wavelength. a peak gain of almost 5.5 db is achieved at 6 ghz. the simulated gain ranges from 1.5 to 5.8 db, and the measured gain range from 1.5 to 5.5 db. figure 13(b) demonstrates the proposed antenna's radiation efficiency w.r.t each frequencies bands simulated on hfss. the radiation efficiency increases with frequency, with a maximum efficiency of about 96% found in the mid-frequency region. . (a) (b) fig. 13 (a) simulated and measured gain in db, (b) simulated efficiency of the presented antenna 186 l. kumar, v. nath, bvr reddy the proposed antenna has achieved more than 80% radiation efficiency for all bands. the characteristics of the provided antenna, viz. size, gain, frequency bands, impedance bandwidth, and substrate material, are compared with wideband monopole antenna designs published in recent research articles summarised in table 4. table 4 comparison of the referenced antenna with the presented antenna ref. size (mm3) electrical equivalent size w.r.t free space wavelength (λl ) operating frequencies (ghz) impedance bandwidth (mhz) peak gain (db) substrate material [7] 33×17×1.6 0.55×0.30×0.026 2.5/3.5/5.5 300/400/1520 3.9 fr4 [8] 60×50×1.6 0.72×0.60×0.019 1.8/3.5/5.4 140/180/200 5.18 fr-4 [10] 40×40×1.6 0.64×0.64×0.0256 2.4/3.5/5.5 360/400/450 3.3 fr-4 [11] 36×39×1.6 0.58×0.63×0.026 2.45/3.55/5.5 170/960/740 4 fr-4 [19] 27.5×20×1.5 0.44×0.32×0.024 2.44/3.5/5.5 150/550/2880 4 fr-4 [20] 36×29×0.8 0.59×0.47×0.013 2.45/3.3/5.5 330/140/1060 2.5 fr-4 [21] 34×30×1.6 0.55×0.48×0.026 2.43/3.5/5.7 197/118/90 2.9 fr-4 [22] 83×56×1.56 1.35×0.92×0.0256 2.47/3.55/5.55 380/190/300 3.9 fr-4 [23] 45×40×1 0.64×0.565×0.014 2.12/4.12/5.16 600/1080/220 1.75 fr-4 [24] 37×35×1.6 0.49×0.46×0.021 2/2.45/3.1/3.4 200/590/682/960 1.95 fr-4 [30] 14×16×1.6 0.224×0.256×0.0256 2.4/5.8 400/1500 3.1 fr-4 [31] 12×16×1.5 0.192×0.256×0.024 2.4/5.8 1.44 fr-4 this antenna 30×17×1.6 0.49×0.28×0.026 2.45/3.65/5.5 112/710/1359 5.5 fr-4 7. conclusion this research article has evaluated and experimentally validated a compact tri-band antenna encompassing wlan/wimax bands at 5g sub-6 ghz. the total surface dimension of the antenna is 30 × 17 mm2 with a simple design using low-profile fr-4 substrate material and having wideband characteristics. the presented antenna could be operated in three bands, resonating at 2.45 ghz, 3.65 ghz, and 5.5 ghz by extruding three inverted lshaped extensions from the slotted primary patch antenna. peak gains of 1.34 db (at 2.45 ghz), 2.55 db (at 3.65 ghz), and 3.8 db (at 5.5 ghz) have been achieved. the presented antenna achieved a peak gain of 5.5 db in the upper-frequency region. the wide bandwidth has been accomplished successfully using defected ground plane while keeping the overall antenna volume minimum. a good impedance matching is obtained by etching an equivalent hexagon slot in the main radiating patch for all the operating bands. the omnidirectional h-plane and bi-directional e-plane with stable gain across the operating frequencies band have also been accomplished. the proposed antenna is a good choice for near-future 5g sub-6 ghz application systems and wlan and wimax bands because of its compact size, stable gain, and more than 80% efficiency. triple-band stub loaded patch antenna with high gain for 5g sub-6 ghz, wlan... 187 references [1] k. f. lee and k. f. tong, "microstrip patch antennas: basic characteristics and some recent advances", in proceedings of the ieee, vol. 100, no. 7, pp. 2169-2180, 2012. [2] r. b. waterhouse, microstrip patch antennas: a designer's guide: a designer's guide, springer science & business media, 2003, chapter 4-5, pp. 167-274. [3] n. kishore and a. senapati, "5g smart antenna for iot application: a review", int. j. commun. syst., vol. 35, no. 13, p. e524, jan. 2022. [4] w. zaman, h. ahmad and h. mehmood, "a miniaturised meandered printed monopole antenna for triband applications", microw. opt. technol. lett., vol. 60, no.5, pp. 1265-1271, 2018. [5] r. n. tiwari, p. singh and b. k. kanaujia, "asymmetric u-shaped printed monopole antenna embedded with t-shaped strip for bluetooth, wlan/wimax applications", wirel. netw., vol. 26, no.1, pp. 51-61, 2020. [6] h. ahmad, w. zaman, m. rehman and f. c. seman, "the smallest form factor monopole antenna with meandered radiator for wlan and wimax applications", iete j. res., vol. 68, no. 4, pp. 3010-3018, 2022. [7] m. karthikeyan, r. sitharthan, t. ali, s. pathan, j. anguera and s. shanmuga, "stacked t-shaped strips compact antenna for wlan and wimax applications", wirel. pers. commun., vol. 123, no. 2, pp. 1523-1536, 2022. [8] a. s. elkorany, a. n. mouse, s. ahmad, d. a. saleeb, a. ghaffar, m. soruri, m. dalarsson, m. alibakshikenari and e. limiti, "implementation of a miniaturised planar tri-band microstrip patch antenna for wireless sensors in mobile applications", sensors, vol. 22, no. 2, p. 667, 2022. [9] j. park, j. minjoo, n. hussain, s. rhee, p. kim and n. kim, "design and fabrication of triple‐band folded dipole antenna for gps/dcs/wlan/wimax applications", microw. opt. technol. lett., vol. 61, no. 5, pp. 1328-1332, 2019. [10] u. patel, m. parekh, a. desai and t. upadhyaya, "wide slot tri‐band antenna for wireless local area network/worldwide interoperability for microwave access applications", int. j. commun. syst., vol. 34, no.12, p. e4897, 2021. [11] s. wang, f. kong, k. li and l. du, "a planar triple-band monopole antenna loaded with an arc-shaped defected ground plane for wlan/wimax applications", int. j. microw. wirel. technol., vol. 13, no. 4, pp. 381-389, 2021. [12] a. z. manouare, s. ibnyaich, d. seetharamdoo, a. e. idrissi and a. ghammaz, "design, fabrication and measurement of a novel compact triband cpw-fed planar monopole antenna using multi-type slots for wireless communication applications", j. circ. syst. comput., vol. 29, no. 2, p. 2050032, 2020. [13] b. kumar, b. k. shukla, a. somkuwar and o. p. meena, "analysis of hexagonal wide slot antenna with a parasitic element for wireless application", prog. electromagn. res. c, vol. 94, pp. 145-159, 2019. [14] s. mahapatra and m. n. mohanty, "an optimised feed hexagonal antenna with defective ground plane for uwb body area network application", instrum. mes. métrolog, vol. 20, no. 5, pp. 261-267, 2021. [15] p. p. singh and s. k. sharma, "design and fabrication of a triple band microstrip antenna for wlan, satellite tv and radar applications", prog. electromagn. res. c, vol. 117, pp. 277-289, 2021. [16] h. v. pallavi, g. m. m. naik, a. p. j. chandra and paramesha, "enhancement of radiation characteristics in a planar microstrip patch antenna using defected ground structure", turk. j. comput. math. education (turcomat), vol. 12, no. 12, pp. 3157-3166, 2021. [17] m. h. reddy and d. sheela, "a compact ultra-wideband patch antenna using defected ground structure", 3c tecnología. glosas de innovación aplicadas a la pyme, edición especial, pp. 567-76, 2021. [18] p. m. mpele, f. m. mbango, d. b. o. konditi and f. ndagijimana, "a tri-band and miniaturised planar antenna based on countersink and defected ground structure techniques", int. j. rf microw. comput.aided eng., vol. 31, no. 5, p. e22617, 2021. [19] h. ahmad, w. zaman, s. bashir and m. u. rahman, "compact triband slotted printed monopole antenna for wlan and wimax applications", int. j. rf microw. comput.‐aided eng., vol. 30, no.1, p. e21986, 2020. [20] chandan, "truncated ground plane multiband monopole antenna for wlan and wimax applications", iete j. res., vol. 68, no. 4, pp. 2416-2421, 2022. [21] a. ibrahim, n. a. fazil and r. dewan, "triple-band antenna with defected ground structure (dgs) for wlan/wimax applications" j. phys.: conf. ser., vol. 1432, no. 1, p. 012071, iop publishing, 2020. [22] a. pandya, t. upadhyaya and k. pandya, "tri-band defected ground plane based planar monopole antenna for wi-fi/wimax/wlan applications", prog. electromagn. res. c, vol. 108, pp. 127-136, 2021. [23] m. kasmaei, e. zareian-jahromi, r. basiri and v. mashayekhi, "miniaturised triple-band monopole antenna loaded with a via-less mtm for 3g, wimax, and wlan applications", int. j. microw. wirel. technol., vol. 14, no. 5, pp. 601-608, 2022. 188 l. kumar, v. nath, bvr reddy [24] s. ullah, i. ahmad, y. raheem, s. ullah and t. ahmad, "hexagonal shaped cpw feed based frequency reconfigurable antenna for wlan and sub-6 ghz 5g applications", in the proceedings of ieee international conference on emerging trends in smart technologies (icetst), 2020, pp. 1-4. [25] r. mark, n. mishra, k. madal, p. p. sarkar and s. das, "hexagonal ring fractal antenna with a dumbbellshaped defected ground structure for multiband wireless applications", aeu-int. j. electron. commun., vol. 94, pp. 42-50, 2018. [26] a. o. fadamiro, j. d. ntawangaheza, o. j. famoriji, z. zhang and f. lin, "design of a multiband hexagonal patch antenna for wireless communication systems", iete j. res., vol. 68, no. 3, pp. 1675-1682, 2022. [27] z. khan, r. p. dwivedi and k. u. kiran, "stub loaded compact hexagonal ring antenna for wlan/wimax/itu applications", in the proceeding of teqip iii sponsored ieee international conference on microwave integrated circuits, photonics and wireless networks (imicpw), 2019, pp. 98-102. [28] g. kumar and k. p. ray, broadband microstrip antennas, artech house, 2003, chapter 9, pp. 357-378. [29] c. a. balanis, antenna theory: analysis and design, wiley, 2005. [30] m. v. yadav and s. baudha. "dual-band miniaturised and modified circular patch radiator for wifi/wlan applications" in the procedding of ieee indian conference on antennas and propagation (incap), 2019, pp. 1-4. [31] s. baudha, m. v. yadav and n. joshi. "miniaturised dual-band arrow shaped planar antenna", telecommun. radio eng., vol. 78, no. 19, pp. 1719-1728, 2019. 13276 facta universitatis series: electronics and energetics vol. 38, no 3, september 2025, pp. 431 456 https://doi.org/10.2298/fuee2503431b © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper hybrid ai model for predicting air quality and rice crop yield using satellite data and environmental variables dev ashrit behera1, paras singh bhatia1, meenakshi kandpal1, jyotirmayee routray1, pranati mishra1, shivani agarwal2, rabindra kumar barik3 1computer science and engineering, odisha university of technology and research, india 2information technology. ajay kumar garg engineering college, ghaziabad, india 3school of computer applications, kiit deemed to be university, india orcid ids: dev ashrit behera https://orcid.org/0009-0007-5022-3893 paras singh bhatia https://orcid.org/0009-0006-6040-7795 meenakshi kandpal https://orcid.org/0000-0002-8974-0229 jyotirmayee routray https://orcid.org/0000-0003-2747-3919 pranati mishra https://orcid.org/0000-0001-7698-1149 shivani agarwal https://orcid.org/0000-0002-3233-4449 rabindra kumar barik https://orcid.org/0000-0003-3086-3782 abstract. air quality has a significant impact on agricultural productivity, with pollutants such as ozone (o3), particulate matter (pm), and carbon monoxide (co) posing serious threats to crop yields. plant growth and yields can be disrupted by these pollutants, highlighting the need for effective solutions. strategies, including improvements in air quality management to reduce pollutant levels and the development of advanced predictive models, have been proposed. the concentrations of air pollutants and their potential impacts on agriculture can be forecasted by these models, allowing proactive measures to be taken to mitigate adverse effects on crop yields. in this research, the challenges associated with predicting the impact of key air pollutants on rice yield in india are addressed. satellite data from the giovanni data centre was utilized to monitor concentrations of o₃, pm, and co, and to calculate the air quality index (aqi). the prophet model is employed to predict future pollutant levels and aqi. soil temperature and air moisture data were incorporated to assess their combined impact on crop yield. nineteen years of monthly rice yield data from faostat was used to train a feed-forward neural network with inputs including pm, o₃, co, aqi, soil temperature, and air moisture. a high accuracy of 94% was achieved by the model, effectively predicting crop yields based on these factors, and a clear inverse relationship between air quality and crop yield was demonstrated: significant decreases in yield were correlated with higher concentrations of o₃, pm, and co. received november 27, 2024; revised january 25, 2025 and march 07, 2025; accepted march 11, 2025 corresponding author: dev ashrit behera computer science and engineering, odisha university of technology and research, india e-mail: devashritbehera@gmail.com https://orcid.org/0009-0007-5022-3893 https://orcid.org/0009-0006-6040-7795 https://orcid.org/0000-0002-8974-0229 https://orcid.org/0000-0003-2747-3919 https://orcid.org/0000-0001-7698-1149 https://orcid.org/0000-0002-3233-4449 https://orcid.org/0000-0003-3086-3782 432 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. concrete evidence of the detrimental effects of air pollution on crop productivity is provided by these findings. key words: air quality index, agricultural productivity, giovanni data centre, prophet model, feed forward neural network. 1. introduction the aqi is a vital tool used globally to measure the quality of the air we breathe and its potential effects on human health and the environment. it assesses the levels of eight primary pollutants in the atmosphere: particulate matter (pm2.5 and pm10), ozone (o3), carbon monoxide (co), nitrogen dioxide (no2), sulphur dioxide (so2), lead (pb), and ammonia (nh3) [1]. in its most comprehensive form, the aqi integrates multiple pollutant concentrations using a mathematical formula to produce a single aqi value [2]. an aqi value of 100 for each pollutant typically indicates a concentration that matches the temporary national air quality standard for health protection. an aqi below 100 is considered acceptable, while an aqi above 100 signifies hazardous air quality, initially affecting sensitive groups and eventually everyone as the value increases [3]. the national air quality index, launched as part of the swachh bharat abhiyan, is managed by the central pollution control board with the assistance of state pollution control boards to monitor air quality across numerous cities in india [4]. despite urbanization, up to 70% of rural households still primarily rely on agriculture for their livelihood [5]. according to the food and agriculture organization of the united nations, india is the second-largest producer of wheat and rice globally [6]. crop yield, defined as the amount of crop produced per unit area, is a crucial metric in agricultural productivity. several factors influence crop yield, including soil quality, irrigation practices, climate conditions, and increasingly, environmental pollutants. as noted in several studies [7,8,9], air pollutants have a significant impact on crop yields. fig. 1 various environmental effects on crops hybrid ai model for predicting air quality and rice crop yield using satellite data... 433 figure 1 illustrates the effect of air pollutants, along with air temperature and soil moisture, on crops. ozone (o3) is an environmental gaseous pollutant that enters leaves through stomatal pores, causing foliage damage [10]. particulate matter accumulation on leaves can reduce photosynthesis [11]. although less researched in agricultural contexts, carbon monoxide can disrupt plant respiration processes [12]. india's diverse climatic zones and varied agricultural practices make it particularly vulnerable to the effects of air pollution. the green revolution, a transformative period in indian agriculture, aimed to alleviate hunger and food insecurity through advanced technologies [13]. while it transformed india into an agricultural powerhouse, it also led to increased pesticide and insecticide use, contributing to environmental degradation. understanding the interplay between air quality and agricultural productivity is essential for developing strategies to mitigate the adverse effects of pollution on crops. this context highlights the importance of ongoing research and policy initiatives aimed at improving air quality and safeguarding agricultural productivity. 1.1. motivation our motivation is inspired by the novelty and interdisciplinary nature of our approach, which combines geospatial data analysis, ai modelling, and agricultural science to address a critical issue: the impact of air quality on crop productivity. traditional methods of assessing crop yield have often overlooked the intricate and dynamic interplay between environmental pollutants and agricultural outcomes. by leveraging advanced technologies such as satellite data from giovanni and statistical data from faostat, alongside sophisticated ai techniques, our approach aims to fill this gap. this innovative integration not only enhances our understanding of how pollutants like o3, pm, and co influence rice yield but also provides actionable insights for mitigating environmental risks and optimizing agricultural practices in a changing world. our work is driven by the potential to contribute to sustainable agriculture and global food security through cutting-edge environmental informatics. 1.2. objectives the research aims to determine the relationship between air pollutants, aqi, temperature, moisture, and rice production using satellite data analysis, artificial intelligence (ai) modeling, and agricultural science methodologies. specifically, our objectives include assessing the concentration of gases, including o₃, pm, and co, using satellite data from giovanni [14] and calculating the aqi to understand the environmental conditions affecting agricultural regions; using the prophet model to predict future trends in air pollutants and aqi levels; analyzing the impact of air pollutants, temperature, and moisture concentrations on rice yield utilizing data from the food and agriculture organization of the united nations [15], aiming to understand the complex interplay between environmental factors and agricultural outcomes; and developing a feedforward neural network model to analyze the relationship between air pollutants, aqi, temperature, moisture, and crop yield to identify underlying patterns and key drivers of crop productivity. 434 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. 1.3. organizations the structure of this paper is as follows: section 2 summarizes relevant studies, offering an overview of methods and findings related to air quality indices (aqi), rice yield, and crop yield predictions. section 3 presents the proposed framework, detailing the methodology, data sources, and predictive models used in the study. section 4 discusses the implementation and results, covering the algorithms employed, the training process and the accuracy of our predictions. finally, section 5 concludes by highlighting the main findings and contributions, and proposing directions for future research. 2. related work extensive research has been conducted in recent years to understand the impact of air pollutants on crop yields and to develop accurate predictive models for agricultural productivity. many studies have explored the detrimental effects of pollutants like ozone (o3), particulate matter (pm), and carbon monoxide (co) on crop growth. in addition, advanced modelling techniques, such as deep learning and time series forecasting, have been employed to enhance prediction accuracy. this section reviews key contributions in these areas. l. zhoul et al. [16] focused on air pollution in nanjing by analysing the aqi using data from june 2014 to may 2019. they employed the prophet model to predict aqi levels from june 2019 to april 2020, providing insights into future air quality trends in the region. similarly, sama et al. [17] addressed global air pollution concerns, emphasizing the impact of fossil fuels and vehicular emissions. their research demonstrated that time series forecasting was more effective than linear regression for predicting pollution levels, particularly in time-dependent datasets. they applied their model to air quality data from bhubaneswar, india, yielding strong predictive accuracy within significant confidence intervals. setianingrum et al. [18] explored air quality issues in jakarta, one of the most polluted cities in the world. they utilized the prophet model and various forecasting techniques to predict pollutants like pm10, so2, co, and o3 using ispu dki jakarta data from 2010 to 2019. their findings indicated that the prophet model was more effective than arima for predicting so2, co, and o3, while arima performed better for pm10 and no2. further extending the application of the prophet model, shen et al. [19] used it to predict air pollution levels in south korea. they optimized the model's parameters using three years of air quality data from seoul open data plaza and successfully predicted concentrations of pm2.5, pm10, so2, and co up to one year in advance. in the field of agricultural productivity, ji et al. [20] developed models using historical yield data and weather variables, adjusting artificial neural network (ann) parameters to optimize prediction accuracy. their study demonstrated that ann models outperformed multiple linear regression models in predicting rice yields, achieving higher r² values and lower rmse values under fujian's climatic conditions. building on this work, chu z et al. [21] introduced the bbi model, which integrates neural networks to forecast rice yields in guangxi zhuang autonomous region. this approach achieved the highest accuracy for both summer and winter rice yield predictions, illustrating the potential of neural networks in agricultural forecasting. dahikar et al. [22] explored the impact of climatological phenomena on crop production, focusing on the effectiveness of artificial neural networks (anns) for prediction. their research highlighted methodologies hybrid ai model for predicting air quality and rice crop yield using satellite data... 435 for predicting crop yields based on soil and atmospheric parameters, further advancing the application of machine learning in agriculture. nevavuori et al. [23] applied convolutional neural networks (cnns) to predict crop yields using data from uavs, specifically ndvi and rgb data. they optimized cnn performance through hyperparameter tuning and demonstrated that rgb data provided more accurate yield predictions compared to ndvi data, showcasing the potential of uav-based remote sensing in precision agriculture. turning to air pollution’s impact on agriculture, s. pandya et al. [24] reviewed research on the effects of air pollution on agricultural productivity, particularly in developing countries like india. their study focused on yield losses due to air pollution, using aqi metrics to represent variations in air quality across different regions and highlighting the recent impacts of particulate matter on agricultural towns and regions. h. jethva et al. [25] analyzed satellite imagery and agricultural data to study the correlation between postmonsoon rice production, vegetation index, agricultural fires, and air pollution in northwestern india. their research found a significant increase in crop production, vegetation index, and agricultural fire activity, leading to heightened aerosol loading and pm2.5 levels over the indo-gangetic plain. the study emphasized the need for effective crop residue management to mitigate hazardous air quality in the region. ghosh et al. [26] focused on improving rice grain yield predictions in bhubaneswar, india, by using forecast data from a wide-range forecasting system. they downscaled forecast data to daily weather sequences and incorporated it into a crop simulation model. their findings demonstrated improved prediction accuracy as the season progressed, aiding decision-making for rice farming. future research could refine these techniques and extend the application to other crops and regions. dhekale et al. [27] tested the reliability of the extended range forecasts system (erfs) for predicting kharif rice yields in kharagpur, west bengal. they used the ceres-rice model and stochastic weather generators to convert erfs forecasts into daily sequences for input into crop models. their results showed that erfs forecasts effectively predicted year-to-year variability in rice yields, helping farmers make informed decisions for climate risk management in rice production. finally, s. mishra et al. [28] explored the impact of seasonal changes on rice yield along the odisha coast in india using machine learning techniques. they proposed three models: a classifier ensemble, regression techniques with boosting, and a feature ranking and fusion method. their models provided valuable insights into the climatic effects on rice yield, offering promising solutions distinct from traditional prediction methods. turning to the role of iot in fostering smart environments, v. terzieva et al. [29] explored the transformative potential of iot technologies in various contexts, with a particular focus on smart schools and education. the study highlighted how iot devices could optimize learning environments by enhancing the efficiency of the educational process. two prototype iot devices were implemented as part of the research, featuring a communication protocol designed to collect diverse sensor data and provide critical insights using laser technology. the experimental outcomes demonstrated significant promise, with plans underway for developing advanced prototypes. the study underscores the potential of iot in shaping smart educational spaces, paving the way for innovative learning methodologies and resource management [35]. 436 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. table 1 notable contributions to aqi, rice yield, and crop yield predictions author model used findings l.zhoul et al. [16] prophet, prophetsvr, prophet-lstm enhanced prediction accuracy of aqi using hybrid models in nanjing. samal et al. [17] sarima, prophet demonstrated the effectiveness of time series forecasting models over linear regression for global air pollution. setianingrum et al. [18] prophet, arima showed the impact of the prophet model in air quality prediction in indonesia (jakarta). shen et al. [19] prophet successfully predicted six pollutants and extended prediction time in seoul, south korea. ji et al. [20] ann demonstrated superior rice yield predictions in fujian's climatic conditions over linear regression models. chu z, yu j et al. [21] bbi-model, bpnns, indrnn accurate forecasts of rice yields in guangxi zhuang autonomous region, china, for both summer and winter seasons. dahikar et al. [22] ann discussed the effectiveness of ann in predicting crop yield based on climatological phenomena. nevavuori et al. [23] cnn achieved lower errors in crop yield prediction using uav rgb data compared to ndvi. s.pandya et al. [24] sarima, prophet reviewed the impact of air pollution on agriculture in developing countries like india. h.jethva et al. [25] normalized difference vegetation index (ndvi) highlighted the need for effective crop residue management based on the correlation between crop production, vegetation index, agricultural fires, and air pollution. 2.1. research gap while significant progress has been made in understanding the relationship between air quality and crop yield, several critical gaps remain unaddressed. many studies focus on individual pollutants or use simpler linear regression models, which fail to capture the intricate, non-linear interactions between multiple environmental factors and crop yield. for example, the works by ji et al. [20] and chu et al. [21] primarily rely on historical yield data and basic weather variables, without incorporating the synergistic effects of pollutants like co, pm, and o3 with soil temperature and air moisture. similarly, studies using machine learning techniques often do not leverage advanced time-series forecasting models to predict future environmental conditions, limiting their ability to provide actionable insights for proactive agricultural management. another limitation in the current body of research is the lack of integration between satellite-derived pollutant data and machine learning-based predictive modeling. although some works utilize geospatial data, they often fail to preprocess it comprehensively or address its temporal dynamics, reducing prediction accuracy. furthermore, studies exploring the application of the prophet model are typically confined to air quality forecasting without linking these predictions to their downstream impacts on agricultural productivity. to address these gaps, our study combines the timeseries forecasting capabilities of the prophet model with the predictive power of a feed forward neural network. this novel integration allows for the simultaneous forecasting of air pollutants and the modeling of their direct and indirect impacts on crop yield. additionally, by incorporating geospatial satellite data and multi-year faostat yield data, our approach provides a comprehensive, data-driven analysis that bridges the divide between environmental science and agricultural informatics. hybrid ai model for predicting air quality and rice crop yield using satellite data... 437 3. proposed framework 3.1. methodology in agricultural forecasting, integrating diverse data sources and advanced algorithms significantly enhances prediction accuracy. the proposed model employs the prophet framework to analyse monthly co, pm, and o3 concentrations from 2005 to 2023, sourced from giovanni data archives. by incorporating trend, seasonality, and additional regressors, the model captures long-term trends, periodic patterns, and external influences on pollutant concentrations, which are then used to determine the aqi. this aqi, along with predictions of soil moisture and air temperature, is crucial for accurate crop yield forecasting. the training data, combined with crop yield data from the same period, ensures comprehensive and reliable predictions for improved decision-making and resource management in agriculture. figure 2 describes the entire model consisting of data inflow from giovanni data archives and faostat data centres. it describes the accumulation of a dataset that is to be loaded onto the feed forward neural network involving processed data dimensions of the pollutant concentration and aqi. it also shows the creation of an input dataset which is to be prompted for crop yield prediction by taking predicted pollutant concentration from the prophet model along with the aqi from the predicted data. it clearly shows the aqi generation process as well. finally, crop yield was predicted from the input data and results were shown. following successful model training, crop yield prediction is executed utilizing the input dataset generated by the preceding model. this involves employing sophisticated time series forecasting techniques and rigorous aqi calculations to facilitate accurate predictions. the integration of these datasets allows for a comprehensive analysis of the intricate interplay between environmental factors and crop yield outcomes. fig. 2 schematic diagram of the aqi prediction and crop yield analysis model 438 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. this holistic approach ensures a robust and reliable framework for forecasting agricultural productivity, thereby offering valuable insights for informed decision-making in the realm of food security and agricultural policy. 3.1.1. hypothesis for method selection the selection of the feed forward neural network (fnn) and the prophet model is rooted in their complementary capabilities, making them well-suited for the complex task of predicting crop yields based on air quality. the prophet model is specifically designed for time series forecasting and excels in handling missing data, capturing seasonality, and identifying long-term trends. its ability to forecast pollutant concentrations such as co, pm, and o3, along with the air quality index (aqi), provides a robust foundation for understanding future environmental conditions. these predictive insights are crucial as they establish the baseline data required for accurate crop yield predictions. on the other hand, the fnn is a powerful tool for modeling non-linear relationships in high-dimensional datasets. it is particularly effective in processing multidimensional inputs, including pollutant concentrations, aqi, soil temperature, and air moisture, to predict crop yields. the neural network’s architecture allows it to learn complex patterns and dependencies, providing precise results even in scenarios where relationships between variables are intricate and not immediately apparent. by combining these two methods, we leverage the strengths of both statistical forecasting and machine learning. the prophet model complements the fnn by serving as an accurate preprocessor, generating reliable predictions for environmental variables. these predictions are integrated into the fnn as input features, allowing the neural network to explore how these variables interact with one another and influence agricultural productivity. this synergy enhances the overall accuracy and interpretability of the predictions, addressing both temporal trends and complex dependencies in the data. 3.2. dataset description 3.2.1. giovanni data centre it is a web application created by nasa. the first requirement for the successful prediction of crop yield at a particular period in the future requires the aqi, soil moisture and air temperature at that time which is determined by the prophet model. the raw concentration of three major contributing pollutant gases is taken into account for the determination of aqi. the concentration of carbon monoxide (co) refers to the number of co molecules within an atmospheric column extending from the earth's surface up to the stratosphere per square centimetre of surface area. dust (particulate matter) consists of small solid particles that can either remain suspended in the atmosphere as aerosols or accumulate as sediment on the earth's surface. in the troposphere, ozone (o₃) forms naturally from diatomic oxygen (o₂) through electric discharge in air or ultraviolet radiation, with urban areas exhibiting higher ozone concentrations due to anthropogenic pollution. merra-2 [30] is nasa's latest global atmospheric reanalysis dataset, spanning from 1980 to the present, produced by the global modelling and assimilation office using their working model, typically updated approximately every three weeks after each month's end. all the gases come from different collections of this dataset. the other two factors affect the crop yield growth directly. average layer soil moisture refers to the depth-averaged water content within a specific soil layer below the earth's surface, while the warmth of the air indicates the movement energy in the atmosphere at a specific location. hybrid ai model for predicting air quality and rice crop yield using satellite data... 439 table 2 presents an analysis of data sourced from various dimensions, including pollutants and environmental factors obtained from giovanni. each dimension is associated with a specific collection, unit of measurement, and frequency of data collection. table 2 analysis of environmental pollutants and factors from giovanni dimension collection obtained unit frequency carbon monoxide m2tmnxchm ppbv monthly particulate matter m2tmnxaer kg m-3 monthly ozone m2imnxasm dobsons monthly soil moisture m2tmnxlnd m3 m-3 monthly air temperature m2imnxlfo k monthly 3.2.2. faostat data centre faostat is an online database maintained by fao. faostat is a critical resource for policymakers, researchers, and the general public, offering data on various aspects of agriculture. some faostat domains overview [31] are mentioned in the next lines. production covers agricultural production data, including quantities produced, producer prices, value at the farm gate, harvested area, and yield per hectare. trade provides annual trade statistics for about 600 food and agriculture commodities since 1961, collected from national authorities and international organizations. food security includes food supply data, crucial for global and national undernourishment assessments and economic analysis. prices contain annual and monthly producer prices, producer price indices, and consumer price indices. resources include data on the national distribution of land (arable, pasture, and other lands) and the importance of irrigation. investment contains data on private investment in agriculture, official development assistance, and government spending. 3.3. data preprocessing the transformation of raw data into a clean, consistent, and well-defined format, which can be utilized for modelling and analysis, is generally aimed at data preprocessing. based on the source of data, various approaches to preprocessing need to be carried out to ensure the data's accuracy, reliability, and suitability for analytical tasks. 3.3.1. giovanni data the geospatial data coming from giovanni data archives was pre-processed by three processes. filtering concentration data and collecting it based on a single location across each month, followed by performing data cleaning on the collected data. the concentration is then converted into suitable units to ensure accuracy while calculating aqi. finally, the concentration is normalized before forecasting to enhance predictive accuracy. in the earth coordinate system, the latitudes to the north of the equator are taken positive and the south of the equator are taken negative, whereas longitudes to the east of prime meridian are taken positive and west of prime meridian are taken negative. the dataset covers -180° to 180° longitude and -90° to 90° latitude, with a resolution of 0.5° x 0.625°. the top-left corner is (-180°, -90°), and the bottom-right is (180°, 90°). the analysis focuses on a single location's coordinates, using latitude and longitude as inputs. data values at that location are filtered for the period from 2005 to 2023. missing values, 440 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. except for soil moisture (nan), had large negative placeholders, which were replaced with the mean of legitimate values. nan values were replaced with zero. gas concentrations were converted to appropriate units for aqi calculation. table 3 provides a conversion table for gaseous concentration, specifying the calculated unit, along with the corresponding multiplying factor for each dimension. table 3 gaseous concentration conversion table with their current dimension and required dimension dimension calculated unit multiplying factor co mg m-3 1.15 times e-3 pm μ m-3 e9 o3 dobsons 0.1 the dimensions of soil moisture and air temperature did not require conversion as they were not involved in the calculation of aqi but rather served as important dependencies of crop yield and growth. at last, scaling the concentration to normalize the data to a range between 0 and 1 was done using min-max scaling. this normalization prevented some concentrations from dominating the model's training process simply because they have larger magnitudes. 3.3.2. faostat data this study utilizes a dataset on rice yield spanning 19 years, from 2005 to 2023, sourced from the food and agriculture organization corporate statistical database (faostat). faostat, managed by the food and agriculture organization of the united nations (fao), is a globally recognized repository for agricultural data, providing reliable and comprehensive statistics. the dataset includes the following columns: domain code, domain, area code (m49), area, element code, element, item code (cpc), item, year code, year, unit, value for this study, the dataset was refined to retain only the most relevant columns, including year, yield values, and associated attributes, streamlining the analysis. the dataset is publicly accessible for reproducibility and further research at the faostat website: https://www.fao.org/faostat. researchers are encouraged to use this dataset for replicating experiments or conducting additional studies. figure 3 depicts the dataset from the faostat having the column names fig. 3 raw data from faostat with a yield value of 100g/ha https://www.fao.org/faostat hybrid ai model for predicting air quality and rice crop yield using satellite data... 441 3.4. aqi determination at the heart of aqi computation lie several primary pollutants, including particulate matter, ozone, and carbon monoxide. these pollutants, originating from diverse sources such as vehicle emissions, industrial processes, and natural events, have distinct chemical compositions and health impacts. particulate matter consists of tiny particles suspended in the air, while ozone and nitrogen dioxide are reactive gases formed through atmospheric reactions. table 4 likely represents the aqi and what it signifies about the quality of air. it typically categorizes air quality into different levels, providing information about the future health risks belonging to it. table 4 aqi representing health implications over a range aqi intensity description 0-50 good the air quality is acceptable, though sensitive individuals may have some health concerns. 51-100 moderate the air quality is within acceptable limits, but sensitive individuals may still have some health concerns. 101-150 mildly unhealthy air quality is deemed unhealthy for vulnerable groups such as children, the elderly, and those with respiratory or heart conditions. 151-200 unhealthy the air quality has reached unhealthy levels, and adverse health effects may be experienced by everyone. 201-300 very unhealthy the air quality has deteriorated to a very unhealthy level, with potential significant health effects for the entire population. 301-500 hazardous air quality is hazardous, and everyone is at risk of experiencing more serious health effects. as a result, there is a safe limit of exposure for every pollutant contributing to aqi. table 5 describes the standards for the determination of aqi as per us. environmental protection agency. it describes the concentration of pollutants in the air up to which the air quality can be considered acceptable. table 5 aqi and concentration of pollutants aqi pm10 (μg m-3) co (mg m-3) o3 (μg m-3) 0-50 0-50 0.0-1.0 0-50 51-100 51-100 1.1-2.0 51-100 101-200 101-250 2.1-10 101-168 201-300 251-350 10.1-17 169-208 301-400 351-430 17.1-34 209-748 401-500 430+ 34+ 748+ the formula for the calculation of aqi is mentioned below [32], that is ( )( ) ( ) high low p low p low high low i i c bp i i bp bp − − = + − (1) where ip= index value for pollutant p, cp= measured concentration of pollutant p, bphigh= the nearest concentration breakpoint that is greater than or equal to cp, bplow= the 442 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. nearest concentration breakpoint that is less than or equal to cp, ihigh = aqi value associated with bphigh and ilow = aqi value associated with bplow. 3.5. dataset creation this section describes the creation of the dataset that is used for training the feedforward neural network (fnn) model. this comprehensive dataset integrates environmental parameters and agricultural productivity metrics, ensuring a robust input for our predictive analysis. 3.5.1. preprocessed environmental data collection we sourced environmental data from the giovanni data center, which included the following parameters: ozone, particulate matter, carbon monoxide, air moisture and soil temperature. 3.5.2. aqi calculation figure 4 shows the process of integrating the calculated aqi with the environmental data. using the concentrations of o3, pm, and co, we calculated the aqi. the aqi provides a standardized metric that reflects the combined effects of various pollutants on air quality. this calculation was crucial for creating a single, comprehensive measure of air pollution. the calculated aqi was then merged with the environmental data, which includes air moisture and soil temperature. fig. 4 merging of environmental data and aqi 3.5.3. rice yield data rice yield data for india, spanning from 2005 to 2019, was obtained from the faostat database. this data provided annual rice yield values, offering a historical perspective on agricultural productivity. 3.5.4. merging datasets figure 5 illustrates the process of creating a unified dataset for training the feed forward neural network (fnn) model. the steps include data alignment by ensuring temporal alignment of environmental data and calculated aqi with corresponding rice yield values, and combining features by merging all relevant environmental parameters hybrid ai model for predicting air quality and rice crop yield using satellite data... 443 (o3, pm, co, air moisture, soil temperature, and calculated aqi) with rice yield data. this comprehensive dataset forms a robust foundation for training the fnn model to learn the critical relationships between air quality and crops. fig. 5 final dataset for the input to feed forward neural network 3.5.5. final dataset composition the final dataset included the columns: o3 (ozone concentration), pm (particulate matter concentration), co (carbon monoxide concentration), aqi (calculated air quality index), air moisture (air moisture levels), soil temperature (soil temperature levels), and rice yield (annual rice yield values from faostat). table 6 summary of three datasets combined together dataset source key attributes environmental data giovanni data center concentrations of o3, pm, co; soil temperature; air moisture. data is time-series (monthly) and spans 2005–2023. air quality index derived calculation computed from environmental data using the aqi formula. reflects combined pollutant levels as a single metric. rice yield data faostat historical rice yield values (annual) in india, spanning 2005–2023. serves as the dependent variable for predictions. 3.6. prophet model the statistical approach of examining a sequence of data points over some time to look out for trends and patterns is called time series forecasting. it is used to understand the underlying structure and function of the data, which aids in making forecasts and informed decisions. by decomposing the series into its fundamental components—trend, seasonality, and noise—analysts can better interpret the data and predict future values. trend refers to the overall change of effect in the long term in which minor effects are neglected. seasonality refers to regular and predictable changes that recur at specific intervals. noise refers to the insignificant fluctuation which needs to be eliminated from data points the prophet model is a decomposable additive model based on the generalized additive model architecture. its components work together to produce results by combining linear and nonlinear trends with seasonalities and the effects of holidays. this combination ensures accurate and reliable forecasting, making it particularly effective for time series with missing data or outliers. 444 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. ( ) ( ) ( ) ( ) ty t g t s t h t= + + + (2) where g(t) is the growth model capturing the trend (e.g., logistic or piecewise linear), s(t) is the seasonality component capturing periodic patterns (e.g., daily, weekly, yearly), h(t) represents the holiday effects, modeled with dummy variables for special events and ∈t is the noise or residual error, accounting for unexplained variance. figure 6 depicts the basic architecture of the prophet model. it comprises a growth model responsible for capturing overall trends, which intersects with the seasonality component. finally, it incorporates holiday effects and provides the resultant trend, coupled with noise residuals or errors. fig. 6 underlying structure of prophet model 3.6.1. growth model the first component of the prophet model is the growth model, which captures underlying trends. it offers two options: the logistic growth model, suitable for data with saturating, non-linear growth, accounting for carrying capacity and growth rate, and useful when data plateaus after rapid growth; and the piecewise linear model, ideal for linear data with clear growth or shrinkage trends, involving a constant growth rate. both models can include change points, where the growth rate changes, either specified manually or selected automatically, ensuring accurate forecasting of various growth patterns. 1 ( ) ( ) m j t bj g t k a t b l −= = + − (3) where k is the base growth rate, b are the change points and aj are adjustments to the growth rate at change points 3.6.2. seasonality component the seasonality component in the prophet model captures recurring patterns or variations at fixed intervals within time series data. this is crucial for forecasting scenarios influenced by factors like weather, holidays, or cultural events. the seasonality component includes several subcomponents, each representing different periodicities such as daily, weekly, monthly, or yearly. these subcomponents combine to form the overall seasonality effect. by accurately capturing seasonality, the prophet model produces more reliable and precise forecasts, allowing users to make informed decisions based on underlying patterns in the data. hybrid ai model for predicting air quality and rice crop yield using satellite data... 445 1 2 2 ( ) cos sin n n nn nt nt s t a b p p   =      = +           (4) where p is the period (e.g., 365.25 for yearly seasonality), n is the number of fourier terms to include and an and bn are coefficients learned by the model. 3.6.3. holiday effect the holiday effect in the prophet model adds dummy variables to capture the impact of holidays and special events on time series data. analysts provide a list of past and future events, and the model assigns parameters for changes in the forecast during those times. extra parameters account for effects over surrounding days, ensuring accurate forecasting by incorporating holiday impacts into the model. 1 ( ) l l t hl h t a l = =  (5) where h is the set of periods associated with holiday l and al is the parameter indicating the effect size for holiday l. 3.6.4. noise residuals the error term or residuals in a model capture unexplained variance, reflecting its accuracy. analysts adjust model parameters to minimize these errors, improving forecast reliability. by identifying and addressing large errors, outliers, or sudden increases, analysts refine their models. reviewing flagged forecasts helps make necessary adjustments, ultimately enhancing prediction accuracy. 2(0, )t n  (6) where σ2 is the variance of the residuals. 3.7. feed forward neural network a feedforward neural network is a basic type of artificial neural network where data flows in a single direction—from input, through hidden layers, to output. neurons in fnns process inputs with weighted sums and activation functions, forming the basis for more complex neural network designs. despite their simplicity, fnns are versatile and widely used in machine learning applications. 3.7.1. layers of fnn in a feed forward neural network (fnn), the input layer receives initial data, with each neuron representing a feature of the input vector. it distributes this data to hidden layers for processing. hidden layers perform complex transformations using weighted connections and activation functions, allowing the network to learn intricate patterns. the number and configuration of these layers and neurons can be adjusted based on task complexity. the output layer produces final predictions or classifications; its neurons correspond to output classes or regression targets. in classification tasks, softmax activation converts outputs into class probabilities. a loss function, such as cross-entropy 446 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. for classification, compares predicted outputs to true labels, optimizing model performance by minimizing errors and adjusting predictions. figure 7 depicts a feedforward neural network with layers (including input and output). the input layer comprises n nodes representing the input vector x. each subsequent layer (l = 1 to l-1) contains hidden neurons wijwij denotes the weight connecting the neuron in the layer to the neuron in the layer l. the final layer has output neurons (y). a softmax function converts these outputs into a probability distribution over classes. the loss function measures the difference between the network's prediction (y) and the true labels (z). backpropagation utilizes this loss to iteratively adjust the weights (wijwij) to minimize the overall error, enabling the network to learn complex relationships within the data. fig. 7 underlying structure of feed forward neural network 3.7.2. softmax function in neural networks designed for classification tasks, the softmax function in the output layer converts raw output scores (logits) into a probability distribution over classes. it ensures outputs range from 0 to 1 and sum to 1, crucial for interpreting them as probabilities. the function emphasizes the most probable class by assigning it a higher probability while reducing probabilities for less likely classes. 3.7.3. error backpropagation error backpropagation is essential for neural network learning, calculating gradients of the loss function with respect to each weight to minimize prediction errors. it efficiently updates weights by propagating error gradients backward from the output layer to the input layer using the chain rule, ensuring optimal adjustments for minimizing loss across the network. 3.7.4. entropy loss function the cross-entropy loss function assesses classification model performance by measuring the disparity between predicted and true probability distributions. it penalizes hybrid ai model for predicting air quality and rice crop yield using satellite data... 447 incorrect classifications more severely, facilitating effective neural network training. as predicted probabilities deviate from actual labels, cross-entropy loss increases, guiding the network towards more accurate predictions. 3.7.5. model performance evaluation to evaluate the performance of the feed forward neural network (fnn), two key metrics were computed: mean squared error (mse) and a derived accuracy score. the mse measures the average squared differences between the predicted values and the true values, giving an indication of the model's prediction error. a lower mse suggests better model performance, as the predictions are closer to the actual values. in this model, the mse was calculated on the test dataset to quantify the prediction error. to provide a more intuitive performance measure, the mse was also converted into an "accuracy" score. this approach gives us a relative measure of model performance, where a lower mse leads to a higher accuracy score. both metrics offer valuable insight into the model's effectiveness, with mse reflecting the error and the accuracy score offering a user-friendly metric for overall model performance. figure 8 shows the accuracy and mse of the fnn model depicting the precision of the model. fig. 8 model performance analysis – mse and accuracy metrics mean squared error (mse): 0.029, converted accuracy: 0.971 4. result and discussion the data frame used with the prophet model typically includes two columns: 'ds' for timestamps in yyyy-mm-dd format and 'y' for numerical values, such as normalized pollutant concentrations. by providing a desired future period, like five years converted to months, to the predict() function, the model forecasts future values based on historical data. the data frame returned by the prophet model after successful forecasting contains several predicted components, which can be utilized for comprehensive analysis. these consist of yhat, yhat_upper, and yhat_lower, where yhat represents the main forecasted value for each date, while yhat_upper and yhat_lower provide the uncertainty intervals as upper and lower bounds, respectively. the trend, trend_upper, and trend_lower represent 448 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. the estimated trend component of the time series, showing values without considering seasonal changes, with trend_upper and trend_lower indicating the bounds of uncertainty in the trend. additionally, yearly, yearly_upper, and yearly_lower capture seasonality on a yearly scale, with yearly_upper and yearly_lower representing the uncertainty bounds for this component. table 7 configuration of prophet model parameter description value/setting growth model captures underlying trends in the data. two options: logistic or linear. linear seasonality handles periodic changes (daily, weekly, yearly). yearly change points points where trend changes significantly automatically detected holiday effects includes the impact of holidays or special events on forecast not used uncertainty interval range within which the values are expected to fall 95% forecasting period period for which predictions are made 5 years (60 months) data input columns two required columns: ds (timestamps) and y (normalized pollutant concentrations). as specified in the dataset creation section figure 9 shows the dataframe returned after successfully forecasting carbon monoxide gas levels using the prophet model. fig. 9 major components of forecasted dataframe for co pollutant after achieving the predicted data frame for all the taken pollutants namely co, pm and o3, the plot() function was used to generate a visualization of the forecasted values along with the observed data. the visuals consisted of predefined data which showed the actual data points plotted earlier, forecasted values which meant the predicted values that were represented on the plot and uncertainty intervals which around the forecasted values represent the range within which the true values are expected to fall with a specified probability. figure 10 plots generated using the plot () function depict various pollutants with yhat representing normalized concentration values on the y-axis. original data points are hybrid ai model for predicting air quality and rice crop yield using satellite data... 449 marked by black dots, while a dark blue line shows predicted values (yhat), accompanied by a light blue shaded region indicating uncertainty (yhat_upper and yhat_lower bounds). the graphs display monthly data up to 2023, followed by predictions. carbon monoxide (figure 10(a)) initially decreases and stabilizes, despite scattered original data. particulate matter (figure 10(b)) shows closer data points and a steepening trend in predicted values. ozone (figure 10(c)) exhibits widely distributed data points and an observable increase in predicted concentrations over the years. (a) (b) (c) fig. 10 (a) represents the plot of the carbon monoxide pollutant, (b) represents the plot particulate matter pollutant, (c) represents the plot of ozone pollutant the trend component graph visualizes the overall trend in the data. on the x-axis, it displays the years, providing a timeline over which the data spans. this allows for a clear view of how the trend evolves over time. the y-axis represents the trend values, reflecting the underlying direction and magnitude of the data after seasonal effects have 450 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. been removed. this component is essential for identifying long-term patterns, such as whether the data shows a general increase, decrease, or remains stable. figure 10 illustrates the graphs of the trend component for all pollutants over the years from 2005 to 2023. it shows almost negligible uncertainty, suggesting a high level of confidence in the direction and rate of change indicated by the trend. figure 11(a) describes the trend for carbon monoxide, which seems to decrease greatly up to 2017, after which the slope of the trend decreases with a little uncertainty towards the end. figure 11(b) describes the trend for particulate matter, where it linearly increases except for a small increase in slope around 2014. the values of the trend almost lie between 0.2 to 0.5. figure 11(c) describes the trend for ozone, where it simply shows an increasing trend; however, the slope is less compared to particulate matter. (a) (b) (c) fig. 11 (a) visualization of trend component of co (b) visualization of trend component of pm (c) visualization of trend component of o3 the yearly component graph visualizes the annual variations within the data. along the x-axis, it presents the days throughout the year, delineating the timeline across which the data extends. this offers a comprehensive perspective on the yearly fluctuations over hybrid ai model for predicting air quality and rice crop yield using satellite data... 451 time. the y-axis depicts the yearly component values, encapsulating the recurring patterns and deviations from the overall trend across each year, after accounting for seasonal effects. this component proves invaluable for discerning cyclic trends, such as annual peaks or troughs, and for understanding how the data behaves within each yearly cycle. figure 12 shows yearly seasonality graphs for pollutants, highlighting cyclic seasonal variations. the non-linear yearly components reflect these cyclic patterns within the data, occasionally resulting in negative values indicating lower observed values compared to expected trends. figure 12(a) illustrates co's seasonality with a peak in late september and consistently low values throughout the year. figure 12(b) shows pm's seasonality, peaking in late november with a secondary peak in february. figure 12(c) displays o3's seasonality, peaking in september and maintaining high values from july to january, with lower values in other months. (a) (b) (c) fig. 12 (a) visualization for a yearly component of co (b) visualization for a yearly component of pm (c) visualization for trend component of o3 the "yhat" component contains all the predicted values, but they are initially in normalized form. to obtain the original values, we utilize the "min-max scaler" inverse_transform() function, which converts the values back to their original scale. then, 452 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. we calculate the aqi using the method described previously. additionally, considering the significance of factors such as soil moisture and air temperature for crop growth and yield, we incorporate the predicted values of these variables for the corresponding dates. this enriched dataset is then structured into a dataframe, combining all relevant dimensions. finally, this comprehensive dataframe serves as input for predicting crop yield using a trained feed forward neural network. the performance of the feed forward neural network model was tested using test datasets. figure 13 shows each test dataset includes calculated aqi values along with pollutant concentrations (pm2.5, o3, co), air moisture, and soil temperature. these datasets were fed into the trained fnn to predict the corresponding rice yield values. the results highlight a clear relationship between air quality and crop yield. fig. 13 test dataset for feed forward neural network the fnn is configured based on the optimizations mentioned in table 8 to give the most accurate and precise results which were found to be reasonable and logical. the results from the fnn model, shown in figure 14, clearly indicate that an increase in aqi, which signifies deteriorating air quality, is associated with a decrease in rice yield. this inverse relationship underscores the significant impact of air pollution on agricultural productivity. specifically, case 1 had the highest aqi, reflecting the poorest air quality among the three cases. consequently, the predicted rice yield was the lowest, illustrating the detrimental effects of severe pollution on crop productivity. table 8 configuration of the feed forward neural network component description value/setting input layer receives processed inputs: pollutant concentrations, aqi, soil temperature, air moisture, etc. 6 nodes hidden layers layers between input and output layers to capture nonlinear relationships. 2 layers, 10 neurons each activation function non-linear transformation applied to hidden layer outputs. relu (rectified linear unit) output layer produces the final prediction (rice yield). 1 node (for regression output) loss function measures the difference between predicted and true values. mean squared error (mse) optimization algorithm adjusts weights to minimize the loss function. adam optimizer learning rate controls the step size of updates in the optimization algorithm. 0.001 epochs number of times the entire dataset is passed through the network during training. 100 batch size number of samples processed before updating the model weights. 32 hybrid ai model for predicting air quality and rice crop yield using satellite data... 453 case 2 shows that with the lowest aqi, indicating the best air quality, this dataset showed the highest predicted rice yield. this result underscores the benefits of clean air for agricultural output. case 3 exhibited moderate aqi levels, resulting in a moderate predicted rice yield. the results from this case further validate the correlation between air quality and crop yield, with moderate pollution leading to correspondingly moderate yields. fig. 14 relation between aqi and crop yield 4.1. ablation study to evaluate the effectiveness of combining datasets, we compared models trained on individual datasets (faostat and giovanni) with those using the hybrid dataset. the faostat dataset, while essential for providing historical yield data, lacks environmental metrics, limiting its predictive accuracy. giovanni data, with its comprehensive environmental factors, improves model performance but does not address direct agricultural impacts. the hybrid dataset combines these strengths, leading to better overall results. similar findings by wijayanti et al. [33] emphasize the importance of integrating diverse datasets to capture complex dependencies in agricultural forecasting. table 9 dataset comparison results dataset mse mae r² only faostat 0.041 0.162 0.78 only giovanni 0.029 0.139 0.84 hybrid dataset 0.018 0.102 0.94 to further analyze the improvements brought by combining methods, we compared baseline models (prophet and fnn) with the hybrid model. prophet alone performs well in forecasting temporal trends but struggles with non-linear interactions, while fnn effectively models such complexities but lacks temporal forecasting capabilities. combining these methods leverages their individual strengths, resulting in significant performance gains. these findings align with setiadi et al. [34], who demonstrated the efficacy of hybrid approaches in integrating temporal and non-linear modeling techniques. lastly, we compared our hybrid model with popular methods from related works. arima, while effective for linear trends, shows limitations in handling complex, nonlinear interactions. lstm improves upon arima by addressing non-linearities but lacks dataset integration capabilities. the hybrid model, while slightly less accurate than xgboost, provides a balanced approach with fewer computational requirements and enhanced dataset synergy, making it more adaptable for broader applications. 454 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. table 10 comparison with related work method dataset mse mae r² arima fao & wb 0.045 0.150 0.78 xgboost fao & wb 0.012 0.089 0.96 lstm regional dataset 0.025 0.130 0.86 prophet only (baseline) giovanni dataset 0.032 0.145 0.82 fnn only (baseline) faostat 0.026 0.133 0.85 hybrid model hybrid dataset 0.018 0.102 0.94 the code for this paper is available at https://zenodo.org/records/14203376 5. conclusion and future work in conclusion, utilizing the feed forward neural network (fnn) model with input derived from the forecasted values of the prophet model, we observed a significant inverse relationship between air quality index (aqi) and crop yield. this relationship highlights how increasing aqi, which signifies worsening air quality, adversely impacts agricultural productivity. these findings underscore the critical importance of considering environmental factors like air quality when analysing and improving agricultural outcomes. poor air quality can directly or indirectly affect plant growth by reducing photosynthetic activity, altering the chemical composition of soil and water, and impacting the overall ecosystem health. such insights are essential not only for agricultural planning but also for implementing effective environmental policies to mitigate the negative impacts of pollution. future studies could further enhance this research by incorporating additional factors, such as soil quality, precipitation levels, temperature variations, and pest outbreaks, to provide a comprehensive understanding of the interplay between environmental conditions and crop yield. leveraging advanced modeling techniques, including cutting-edge machine learning methodologies and deep learning architectures, can significantly improve predictive accuracy, reliability, and the ability to capture complex nonlinear relationships among variables. extending the scope to include diverse geographic regions and a variety of crops will make the findings more generalizable and actionable for global agricultural strategies. additionally, developing real-time monitoring systems for data collection and integration with predictive models can aid in dynamic decision-making, helping farmers adapt quickly to changing environmental conditions. by addressing these aspects, future research can contribute to the development of robust solutions for optimizing agricultural productivity in the face of environmental challenges. this work also underscores the need for interdisciplinary collaboration between environmental scientists, agricultural researchers, and data scientists to tackle the multifaceted issues of food security and environmental sustainability. references [1] r. huang, r. hu and h. chen, "a novel hybrid model for air quality prediction via dimension reduction and error correction techniques", environ. monit. assess., vol.197, p. 96, 2025. [2] m. suman, "air quality indices: a review of methods to interpret air quality status", mater. today, vol. 34, no. 3, pp.863-868, 2020. https://zenodo.org/records/14203376 hybrid ai model for predicting air quality and rice crop yield using satellite data... 455 [3] kanchan, a. k. gorai and p. goyal, "a review on air quality indexing system", asian j. atmos. environ., vol. 9, pp. 101-113, 2015. [4] p. k. meena and d. v. singh, "air quality monitoring and pollution control technologies", int. j. multidiscip. res. sci. eng. technol., vol. 7, pp.4409-4426, 2024. [5] l. s. pereira, "water, agriculture and food: challenges and issues", water resour. manag., vol. 31, 2017, pp. 2985-2999. [6] a. singh and a. gupta, "food security through sustainable agriculture: a prospective study in the indian context", in sustainability and health informatics: a systems approach to address the climate action induced global challenge, singapore: springer nature, 2024, pp. 155-182. [7] h. kaur, "air pollution and greenhouse gases emissions: implications in food production and food security", in greenhouse gases: sources, sinks and mitigation, singapore: springer, 2022, pp. 107-133. [8] d. tong, r. mathur, k. schere, d. kang and s. yu, "the use of air quality forecasts to assess impacts of air pollution on crops: methodology and case study", atmos. environ., vol. 41, pp. 8772-8784, 2007. [9] w. wei and z. wang, "impact of industrial air pollution on agricultural production", atmosphere, vol. 12, pp. 1-15, 2021. [10] m. m. hasan, m. a. rahman, m. skalicky, n. m. alabdallah, m. waseem, m. s. jahan, g. j., ahammed, m. m. el-mogy, a. a. el-yazied, m. f. ibrahim and x. w. fang, "ozone induced stomatal regulations, mapk and phytohormone signaling in plants", int. j. mol. sci., vol. 22. pp. 12, 2021. [11] j. k. lee, d. y. kim, s. h. park, s. y. woo, h. nie and s. h. kim, "particulate matter (pm) adsorption and leaf characteristics of ornamental sweet potato (ipomoea batatas l.) cultivars and two common indoor plants (hedera helix l. and epipremnum aureum lindl. & andre)", horticulturae, vol. 8, p. 1, 2022. [12] m. wang and w. liao, "carbon monoxide as a signaling molecule in plants", front. plant sci., vol. 7, p. 572, 2016. [13] m. a. chakwanda, p. t. chenge, n. baloyi, g. l. tamburayi, m. muchangana, p. jarbah, a. rera and j. p. sahoo, "green revolution: the catalyst for agricultural transformation", vigyan varta: int. j. e-magazine sci. enthus., vol. 5, pp. 294-302, 2024. [14] giovanni satellite data center, nasa. [online] available at: https://www.earthdata.nasa.gov/technology/ giovanni [15] world health organization, "asia and the pacific regional overview of food security and nutrition 2020: maternal and child diets at the heart of improving nutrition", food & agriculture org., vol. 2020, 2021. [16] l. zhoul, m. chenl and q. ni, "a hybrid prophet-lstm model for prediction of air quality index", in proceedings of the 2020 ieee symposium series on computational intelligence, 2020, pp. 595-601. [17] k. k. r. samal, k. s. babu, s. k. das and a. acharaya, "time series based air pollution forecasting using sarima and prophet model", in proceedings of the international conference on information technology and computer communications, 2019, pp. 80-85. [18] a. h. setianingrum, n. anggraini and m. f. d. ikram, "prophet model performance analysis for jakarta air quality forecasting", in proceedings of the 10th international conference on cyber and it service management (citsm), 2022, pp. 1-7. [19] j. shen, d. valagolam and s. mccalla, "prophet forecasting model: a machine learning approach to predict the concentration of air pollutants (pm2. 5, pm10, o3, no2, so2, co) in seoul, south korea", peer j., vol. 8, p. e9961, 2020. [20] b. ji, y. sun, s. yang and j. wan, "artificial neural networks for rice yield prediction in mountainous regions", j. agric. sci., vol. 145, pp. 249-261, 2007. [21] chu, zheng, and jiong yu. "an end-to-end model for rice yield prediction using deep learning fusion", comput. electron. agric., vol. 174, p. 105471, 2020. [22] s. s. dahikar and s. v. rode, "agricultural crop yield prediction using artificial neural network approach", int. j. innov. res. electr. electron. instrum. control eng., vol. 2, pp. 683-686, 2014. [23] p. nevavuori, n. narra and t. lipping, "crop yield prediction with deep convolutional neural networks", comput. electron. agric., vol. 163, p. 104859, 2019. [24] s. pandya, t. r. gadekallu, p. k. r. maddikunta and r. sharma, "a study of the impacts of air pollution on the agricultural community and yield crops (indian context)", sustainability, vol. 14, p. 13098, 2022. [25] h. jethva, o. torres, r. d. field, a. lyapustin, r. gautam and v. kayetha, "connecting crop productivity, residue fires, and air quality over northern india", sci. rep., vol. 9, p. 16594, 2019. [26] k. ghosh, a. singh, u. c. mohanty, n. acharya, r. k. pal, k. k. singh and s. pasupalak, "development of a rice yield prediction system over bhubaneswar, india: combination of extended range forecast and ceres‐rice model", meteorol. appl., vol. 22, pp. 525-533, 2015. 456 d. a. behera, p. s. bhatia, m. kandpal, j. routray, p. mishra, et al. [27] b. s. dhekale, m. m. nageswararao, a. nair, u. c. mohanty, d. k. swain, k. k. singh and t. arunbabu, "prediction of kharif rice yield at kharagpur using disaggregated extended range rainfall forecasts", theor. appl. climatol., vol. 133, pp. 1075-1091, 2018. [28] s. mishra, "prediction of climatic variability effects on rice yield of coastal odisha using machine learning technique, odisha", phd thesis, 2020. [29] v. terzieva, s. ilchev and k. todorova, "the role of internet of things in smart education.", ifacpapers on line, vol. 55, pp. 108-113, 2022. [30] r. gelaro, w. mccarty, m. j. suárez, r. todling, a. molod, l. takacs, c. a. randles, a. darmenov, m. g. bosilovich, r. reichle and k. wargan, "the modern-era retrospective analysis for research and applications", j. clim., vol. 30, pp. 5419-5454, 2017. [31] faostat, fao. "food and agriculture organization corporate statistical database." fao online database, 2022. [online] available at: http://www. fao. org/faostat/en/# data [32] s. a. horn and p. k. dasgupta, "the air quality index (aqi) in historical and analytical perspective a tutorial review", talanta, vol. 267, pp. 1-53, 2024. [33] e. b. wijayanti, d. r. i. m. setiadi and b. h. setyoko, "dataset analysis and feature characteristics to predict rice production based on extreme gradient boosting", j. comput. theor. appl., vol. 1, no. 3, pp. 299-310, 2024. [34] d. r. i. m. setiadi, a. susanto, k. nugroho, a. r. muslikh, a. a. ojugo and h.-s. gan, "rice yield forecasting using hybrid quantum deep learning model", computers, vol. 13, no. 8, p. 191, 2024. [35] m. djordjević, b. jovičić, s. marković, v. paunović and d. danković, "a smart data logger system based on sensor and internet of things technology as part of the smart faculty", journal of ambient intelligence and smart environments, vol. 12, pp. 359-373, 2020. https://shodhganga.inflibnet.ac.in/handle/10603/356319 https://shodhganga.inflibnet.ac.in/handle/10603/356319 12562 facta universitatis series: electronics and energetics vol. 38, no 1, march, 2025, pp. i ii © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd in memoriam in respectful memory of professor zoran jakšić zoran jakšić passed away on january 31, 2025, leaving a deep mark on the scientific community at both the national and international levels. zoran jakšić was born on april 14, 1960, in pančevo, where he completed his primary and secondary education. he graduated from the faculty of electrical engineering, university of belgrade, department of technical physics. he received his master's and doctorate degrees from the faculty of electrical engineering, university of belgrade, department of physical electronics. he spent his scientific and research career in serbia. from 1983 to 1987, he worked in the development department of the "utva" aircraft factory in pančevo. in 1987, he moved to the institute of chemistry, technology and metallurgy, university of belgrade, where he worked at the center for microelectronic technologies. he was the coordinator for science and deputy head of the center for microelectronic technologies (2011-2018). he significantly contributed to the center's accreditation as a national center of excellence in 2014. zoran jakšić founded and taught several courses at the faculty of electrical engineering, university of belgrade. he was the supervisor of several doctoral dissertations, master's and diploma theses. he selflessly supported and helped the scientific work of younger colleagues continuously, from doctoral studies to senior positions. since 1991 he was a member of the international institute of electrical and electronics engineers (ieee) and in 2002 he became ieee senior member. he was a member of the optical society of america (osa) and one of the founders, a member of the initial board and the elected president (president elect) of the optical society of serbia. he was also a member of the council of the association for microwave techniques, technology and systems of serbia. for more than two decades, he was involved in the organization of conferences of the etran society, where he was a member of the three-member collegium, chairman of the program committee, and editor-in-chief of the annual proceedings of the etran conference. he was also chairman of the microand optoelectronics (mo) section. in addition, he was involved in organizing several national and international conferences. his scientific work was dedicated to research in the engineering and technological sciences, particularly microelectronic, microsystem, and nanosystem sensors and detectors at the microchip level. he made a special contribution to research in the fields of photonic crystals, plasmonics, metamaterials and their applications in sensors and detectors. he was a pioneer of this research in serbia and the founder of the first serbian research group for plasmonics and metamaterials. he has published more than 300 scientific papers, including a book (springer verlag) and over 75 articles in international scientific journals. he was involved as a leader or participant in 12 international scientific projects, including three eu fp7 projects, as well as 12 national projects. ii in memoriam in addition to his scientific achievements and pedagogical and organizational contributions, zoran jakšić leaves us a legacy of several books in the science fiction genre and an unsurpassed serbian translation of "the hitchhiker's guide to the galaxy" by d. adams. many of us read them with pleasure and pride and recommend them to younger generations. we remember zoran jakšić as a dedicated scientist, an excellent lecturer, and a colleague who was very supportive of his associates and members of the community. we will miss him for a long time, but his expertise, friendly attitude, and modesty will remain in our memories and serve as a role model. danijel dankovic, slobodan vukosavić, albena paskaleva, božidar radenković 13335 facta universitatis series: electronics and energetics vol. 38, no 4, december 2025, pp. 681 695 https://doi.org/10.2298/fuee2504681b © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design of a reconfigurable microstrip filtenna using π-shaped filter ramesh boddu1, k phaninder vinay1, arindam deb2, jibendu sekhar roy 3 1dept. of ece, raghu engineering college, visakhapatnam, andhra pradesh, india 2sisir radar private limited, new town, kolkata, west bengal, india 3school of electronics engineering, kiit deemed to be university, bhubaneswar, odisha, india orcid ids: ramesh boddu https://orcid.org/0000-0002-9515-3848 k phaninder vinay https://orcid.org/0000-0003-2600-7190 arindam deb https://orcid.org/0000-0002-5557-5392 jibendu sekhar roy https://orcid.org/0000-0002-3571-2708 abstract. in this paper, a novel proposal is presented for the design features of a compact reconfigurable circular patch antenna capable of switching between different frequency bands. the filtenna or filtering antenna comprises of a circular patch antenna offering ultra-wideband (uwb) performance and a π-shaped rf filter integrated with feed line to provide filtering functionality and reconfigurability. additionally, three switches are incorporated into the filter at the intersections of the stubs with the feed line and at the connection point between the feed line and the patch antenna. when considering a system with three switches, there are a total of eight distinct various configurations of switch states. each of these combinations is associated with unique frequency and pattern properties. the proposed antenna exhibits excellent compatibility with wi-max, wireless lan, and ultra-wide band applications, ensuring minimal disturbance from neighboring systems. the circular patch antenna, featuring a circular shape, exhibits exceptional performance within the uwb frequency spectrum spanning from 2 ghz to 10 ghz, all the while operating without the inclusion of a filtering network. the π-shaped rf filter is designed to target specific frequencies: 4.27 ghz 3.51 ghz, 3.93 ghz, 5.185 ghz, and 2.93 ghz. the radiation characteristics further elucidate the substantial gain observed at the central frequencies that correspond to distinct switching states (on and off). the proposed antennas have been successfully fabricated and subsequently subjected to meticulous measurements using network analyzer ms2037c. based on careful observation, it is anticipated that there will be an excellent degree of agreement between the measured and simulated results. key words: reconfigurability, filtenna, π-shaped rf filter, ultra-wide band (uwb). received december 15, 2024; revised april 02, 2025 and april 10, 2025; accepted april 12, 2025 corresponding author: jibendu sekhar roy school of electronics engineering, kiit deemed to be university, bhubaneswar, odisha, india e-mail: drjsroy@kiit.ac.in https://orcid.org/0000-0002-9515-3848 https://orcid.org/0000-0003-2600-7190 https://orcid.org/0000-0002-5557-5392 https://orcid.org/0000-0002-3571-2708 682 r. boddu, k. p. vinay, a. deb, j. s. roy 1. introduction in ultra-wide band wireless communication systems, which are utilized in many different wireless applications, filters and antennas are essential components. it is necessary to scale the most modern uwb antennas to fit into tiny devices. microstrip patch antennas (mpas) printed directly onto the circuit board are ideal for many electromagnetic applications. microstrip antennas are ideal in several uwb applications because they are narrow, inexpensive, and simple to incorporate on a number of vlsi circuits. a wide range of antenna configurations and categories have been widely stated to demonstrate the fundamental capabilities of ultra-wide band operation [1]. the most common challenges faced by uwb antennas are interference from nearby devices and insertion loss. to minimize interference from neighbouring circuits, implement an rf filter with band-selecting capabilities. in modern applications, there is an increasing tendency to combine rf filters with antennas into a one unit to minimize insertion-loss and decrease the overall dimension of the system. there are different techniques available for filtennas design; however, their appropriate choice depends on their particular application. the various techniques like co-design, synthesis approach, multilayer structure, slot/slit, or parasitic elements are used for filtenna design. more specifically, in the co-design technique, the antenna and filter are combined without inter-stage impedance matching. thus, reducing mismatch losses and size and provide improved performance. in contrast, the synthesis technique, the last resonator of the filter, is integrated into the antenna, which acts as a load for the filter. although high selectivity and bandwidth are the key advantages of the synthesis technique due to the large numbers of resonators, making the design is more cumbersome. however, in both methods (i.e., co and synthesis), an additional and extra filter is required in the filtenna design which in turn increases the overall size of the design. therefore, in the recent literature a new design approaches are developed like, use of multilayers and parasitic elements where the extra filter is not required. with these, multilayer structure, both filter and antenna properties are integrated into the same structure. on the other hand, parasitic elements suppress harmonics and increase selectivity. but, these designs are bulky in nature. to reduce the complexity in the design and reduce the overall size of the system a novel method is proposed in this article, i.e., defected microstrip structure. in this technique, filter is directly connected to the feed line of the patch. the proposed method avoids the usage of the extra filter, no need of using resonators, reduces the size and also increases the overall performance of the design in terms of bandwidth and radiation characteristics. 2. related work in the context of this study, it has been observed that filtering antennas exhibit band-selective frequency operation within the range of references [2-9]. in [2], parallel coupled microstrip lines used with printed inverted-l-shaped filtering antenna is reported. a filtering dielectric resonator antenna is proposed in [3], fed by microstrip-coupled slot. a combined ring slot and shorting vias are used to design an omnidirectional filtering patch antenna in [4]. the feed network using microstrip-to-slot line transition is used to design a planar dipole filtenna in [5]. in [6], switchable filtenna is designed for various networking applications. in [7], hairpin bandpass filter is used to design printed elliptical filtenna. the design of a wideband and high-gain metasurface antenna is presented in [8]. the design of a compact semi-circular patch antenna is reported in [9]. in recent years, several proposals design of a reconfigurable microstrip filtering antenna using π-shaped filter 683 have been put towards the utilization of horn antennas equipped with filtering circuits [10–11], uwb antennas integrated with filters [12–14], filtering antennas based on substrate integrated waveguide (siw) technology [15–16], and balanced filtering notch antennas [17]. all of these structures have been developed with the filter synthesis methodology. this methodology offers a reliable filtering process, but with consequential impacts on antenna gain and far-field radiation characteristics as a result of filter noise and insertion loss. another option is to create a filtering antenna by incorporating a basic parasitic element or resonator into the patch or its feed line. this approach allows for a reduction in antenna size and minimization of insertion loss. this paper presents the design and analysis of frequency switchable filtering microstrip antenna. the substrate used for the antenna has a =4.7 and a height of 1.6mm. the antenna is enhanced by attaching microstrip discontinuities and stubs [18]. moreover, the introduction of reconfigurability in the structure is achieved by incorporating three switches. these switches, when in their on or off states, result in distinct pass band and pattern properties. using the recently developed new planar filters [19-21], the performance of planar filtennas may be improved. there are four sections to the current research. 3. design and implementation the filtering antenna features a substrate with εr = 4.4 and a height of 1.6 mm. the implementation of the reconfigurable filtering microstrip antenna is executed in a 2-phase approach. (a) front & rear view of the simulated circular patch antenna (b) top & bottom views of the fabricated circular patch antenna fig. 1 structure of the proposed circular patch antenna 684 r. boddu, k. p. vinay, a. deb, j. s. roy in phase-1 approach, circular patch antenna is implemented with transmission line feed. the circular monopole patch antenna is selected due to its ability to support ultra-wideband (uwb) operation, while minimizing metallization on the radiating surface. its symmetrical geometry facilitates uniform current distribution, resulting in consistent radiation patterns and reliable impedance matching over a broad frequency spectrum. fig.1 depicts the simulated and constructed designs for the uwb monopole antenna, as well as the top and bottom perspectives. the optimal specifications of the circular monopole disc antenna are shown in table 1. the suggested ultra-wide band circular antenna is successfully fabricated and subsequently subjected to meticulous measurements using network analyzer ms2037c. the measurement setup with vna is depicted in fig. 2. table 1 optimized measurements of the proposed circular patch antenna si. no dimensions size (mm) 1. substrate length (l) 50.0 2. substrate width (w) 42.0 3. microstrip line length (lf) 20.30 4. feed width (wf) 2.60 5. patch radius (r) 10.0 6. dgs length (lg) 24.0 fig. 2 measurement setup for the circular patch antenna in phase-2, a π-filter is added to provide the filtering functionality. a π-filter is a type of passive filter which is widely used in rf and power supply applications. it is named for its resemblance to the greek letter π when represented schematically. the filter design consists of two conductors spaced by an appropriate distance. the π-filter is formed by cascading 2 t-junctions (with parallel stubs) and a microstrip line. typically, it consists of a combination of capacitors and inductors configured to achieve desired filtering characteristics. the π-filter is designed with following specifications. impedance z0 = 50 ω cut-off frequency fc = 3 ghz equi-ripple = 0.5 db. rejection band = 20 db at 2*fc the normalized frequency = w / wc = 2 design of a reconfigurable microstrip filtering antenna using π-shaped filter 685 the chebyshev band pass filter prototype is chosen with equi-ripple response of 0.5 db. the ripple is controlled in the passband, and a steep roll-off ensures significant attenuation in the stop band. the chebyshev attenuation is given by [23-24] 2 2 1010log 1 .s n c w a t w    = +         (1) the ripple factor: 11010 . ripple − = (2) the ripple value is 0.5 db, then the ripple factor is ∈ = 0.3317. as as = 20db, w / wc = 2, tn (w / wc) is nth order chebyshev polynomial 1 10 2 10 sa n c w t w −   =    (3) the chebyshev polynomial tn (x) for x = 2 is 1(2) cosh( .cosh (2))nt n −= (4) the normalized frequency is 2, with an attenuation of 20 db. using the filter response curve for a chebyshev filter with 0.5 db ripple, the required filter order (n) for the design is determined. based on a 20 db attenuation and a normalized frequency of 2, the filter order is found to be 4. for a 4th-order chebyshev low-pass filter with 0.5 db equi-ripple, the corresponding normalized low-pass prototype element values are listed in table 2. table 2 chebyshev filter coefficients with 0.5db ripple n g1 g2 g3 g4 g5 1 0.6986 1.0000 2 1.4029 1.1256 1.0000 3 1.5408 0.7071 1.9841 1.0000 4 1.7058 1.2296 2.5408 1.2296 1.7058 for filter order n=4 and using filter coefficients from table-2 the filter coefficients are determined as g1=1.70580, g2=1.22960, g3=2.54080, g4=1.22960 & g5=1.70580. using these values, the capacitor and inductor values are calculated for the equivalent circuit shown in fig. 3. fig. 3 illustrates the equivalent circuit of the π-shaped filter with order n=4, utilizing discrete l and c components. in the π-topology g1, g3 and g5 corresponds to shunt capacitors and g2 and g4 corresponds to series inductors respectively. fig. 3 πsection filter with order n=4 686 r. boddu, k. p. vinay, a. deb, j. s. roy the component scaling equations are based on the impedance (z0 = 50 ω) and cutoff frequency (fc = 3 ghz). the normalized capacitance (shunt elements) and inductance (series elements) of the prototype is 02 n n c g c f z = (5) 0 2 n n c g z l f = (6) the inductor and capacitor values are determined by using the above equations. the optimized values for the capacitors and inductors are provided in table 3. table 3 the final component values of the πsection filter s. no element value 1. c1 1.81pf 2. l2 3.26nh 3. c3 2.70pf 4. l4 3.26nh 5. c5 1.81pf now, the proposed π-shaped filter is added to the feed line of the circular patch antenna to attain frequency selectivity. to enable frequency reconfiguration, 3 switches are coupled at the filter and feed line junctions to design a microstrip filtering antenna. the design of the circular patch antenna at a particular resonance frequency is started with the formula, given in [22]. the complete dimension of the filtering antenna, after simulation, is 80x42x1.6 mm3. the front view of the simulated and fabricated filtering antenna is depicted in fig.4. the optimized dimensions of the filtering antenna structure are tabulated in table 4 and the equivalent circuit of the microstrip filtering antenna is depicted in fig. 5. ononon (a) simulated filtering antenna (b) fabricated filtering antenna fig. 4 simulated and fabricated design of filtering antenna design of a reconfigurable microstrip filtering antenna using π-shaped filter 687 table 4 optimized dimensions of the microstrip filtering antenna s. no parameter value (mm) 1. ls1 18.36 2. ws1 2.31 3. ls2 19.4 4. ws2 2.31 5. ls3 19.2 6. ws3 2.31 7. ls4 10.0 8. ws4 2.60 fig. 5 circuit model of an antenna with filtering capabilities in the suggested microstrip filtering antenna configuration, depicted in fig. 5, three switches are presumed at specific locations to accomplish the frequency reconfigurability. from the antenna side, sw-1 is positioned among the feed line and the antenna; sw-2 is positioned at the 1st t-intersection; and sw-3 is positioned at the next t-intersection. the filtering antenna with switch positions is depicted in fig. 6. fig. 6 filtering microstrip antenna at 000 boolean combination 688 r. boddu, k. p. vinay, a. deb, j. s. roy to simplify modeling, switches are represented as ideal open or short circuits. a switch in the on state is equivalent to a continuous conductive path, while the off state represents a discontinuity in the path. fig. 7 all eight possible combinations of switches the two-state switches are represented in boolean form as 1 (on) and 0 (off). there are eight different state combinations for three of the switches in the suggested configuration. for example, suppose each of the 3 switches is in the open circuit or off state. fig. 7 depicts simulations of all eight switching combinations. 4. results and discussion the filtenna is simulated using 3d em tool cst mws studio. then the filtenna is fabricated and measurement is done using vector network analyzer. 4.1. impedance characteristics fig. 8 illustrates the parametric sweep analysis of the ground plane. the lg of the ground plane is varied from 20 mm-26 mm and it is optimized to 24 mm. for lg = 24mm the minimum s11 of -54 db at 8.5 ghz. fig. 8 variation of s11 with the length of the ground plane design of a reconfigurable microstrip filtering antenna using π-shaped filter 689 the simulated and measured s11 and vswr characteristics of the planar circular patch antenna after simulation using finite integration technique is presented in fig.9. the proposed circular patch antenna demonstrates ultra-wideband (uwb) operation, spanning 2.4 ghz to 12 ghz. the s11 plot confirms uwb performance, with minor variations in s11 attributed to fabrication losses. fig. 9(b) shows the simulated and measured vswr plot, revealing a vswr value below 2 across the entire uwb frequency range. (a) simulated and measured s11 plot (b) simulated and measured vswr plot fig. 9 variation of s11 & vswr with frequency for the circular monopole antenna 690 r. boddu, k. p. vinay, a. deb, j. s. roy the proposed microstrip filtering antenna achieves frequency selective characteristics by incorporating three switches with the filter in design phase-2. the resulting simulated and measured s11 plot is shown in fig.10. by operating these three switches the filtering antenna can be used to operate at different applications like bluetooth, wi-fi, wlan and also x-band applications. due to the filter the sharp operating band are also achieved by rejecting the out of band frequencies. fig. 10 simulated and measured return loss plot of the filtering antenna to provide frequency reconfigurability, the filtering antenna is equipped with three switches. fig. 11 displays the s11 parameters of the filtering microstrip antenna, featuring a π-shaped filter, for four switching conditions (identified in fig. 7). in the 000 switch state, the antenna functions as a narrowband filter centered at 4.28 ghz with an s11 of -16.92 db. switching to the 001 state enables multi-frequency operation at 3.51 ghz, 4.31 ghz and 8.91 ghz, with s11 values of -29.23 db, -23.92 db & -32.18 db, respectively, making it suitable for wi-max applications. fig. 11 s11 vs frequency plot for switching combinations 000, 001, 010, and 011 design of a reconfigurable microstrip filtering antenna using π-shaped filter 691 when sw-2 is on and sw-1 and sw-3 are off, the antenna rejects signals across the full ultra-wide band frequency range. conversely, when sw-1 off and sw-2 and sw-3 are on, the antenna supports dual-band operation, covering 3.55-4.49 ghz and 7.28-9.15 ghz, making it suitable for w-max and (8-12ghz) (x-band) applications. fig. 12 s11 vs frequency plot for switch conditions 100, 101, 110, and 111 as shown in fig.12, the s11 parameters for the last four switch combinations reveal that the intended antenna acts as a band rejection filter (brf) for the whole uwb spectrum when in the 100 and 110 switch states. with sw-1 and sw-3 on and sw-2 off (101), achieves excellent narrowband performance at 5.183 ghz, with an s11 of -50.61 db, suitable for wlan applications. when all switches are activated, the antenna functions as a narrowband antenna at 2.94 ghz, with an s11 of -48.57 db, making it suitable for bluetooth and w-max applications. 4.2. radiation characteristics the circular patch filtenna far field realized gain plot is displayed in fig. 13. the monopole antenna operates at 2.94 ghz with a max. gain of 4.41dbi. fig. 13 far-filed gain plot for the circular patch filtenna 692 r. boddu, k. p. vinay, a. deb, j. s. roy the gain patterns of the filtering antenna are illustrated in fig.14, showcasing its performance at multiple frequencies and switching states. the above plot indicates that the antenna achieves adequate gain values across all operating frequencies. fig. 14 far-field gain plots of the filtering antenna in 2d for various switch states as illustrated in fig. 14(d), the filtering antenna reaches maximum gains of 5.8 dbi at 8.91 ghz in the (001) switch state, and 3.38 dbi at 4.27 ghz in the (000) switch state. peak gains of 3.51 dbi, 3.06 dbi, and 5.80 dbi are found at 3.51 ghz, 4.3 ghz, and 8.91 ghz, respectively, in the (001) switch state. the (011) state exhibits peak gains of 2.88 dbi and 5.66 dbi, while the (101) state has a peak gain of 3.08 dbi. for 111 condition, a peak gain of 4.58 dbi is recorded at 2.92 ghz. fig. 15 shows the current distribution plot of the proposed microstrip filtenna at a frequency of 8.92 ghz. from the current distribution plot it is clearly observed that the maximum current is distributed at the edges of the π-shaped filter. conversely the minimum value of the current is distributed at the center of the patch. except the edges there is a uniform current distribution is observed through the entire substrate. table 4 provides a comprehensive summary of all switch configurations. fig. 15 current distribution plot of the proposed microstrip filtenna design of a reconfigurable microstrip filtering antenna using π-shaped filter 693 table 4 summary of the operating characteristics of the filtering antenna si. no sw1 sw2 sw3 frequency (ghz) s11 (db) bandwidth (mhz) maximum gain (dbi) 1. off (0) off (0) off (0) 4.28 -16.93 176.3 3.386 2. off (0) off (0) on (1) 3.52, 4.31 & 8.92 -29.22, -24.40 & -31.97 1284, 960 & 2223 3.516, 3.064 & 5.808 3. off (0) on (1) off (0) band rejection filter (brf) 4. off (0) on (1) on (1) 3.94 & 8.68 -16.93 & -23.42 937 & 1875 2.89 & 5.665 5. on (1) off (0) off (0) band rejection filter (brf) 6. on (1) off (0) on (1) 5.184 -50.6 544 3.07 7. on (1) on (1) off (0) band rejection filter (brf) 8. on (1) on (1) on (1) 2.93 -48.50 542 4.59 table 5 performance comparison of π-filtenna with other filtering techniques ref. no yop size (mm2) type of the filter resonance frequency bandwidth peak gain (dbi) [25] 2012 120x12 siw inductive window bpf 14.4 ghz 380 mhz 3.6 [26] 2016 90.3x83.8 open-loop resonator filter 900 mhz & 1900 mhz 60 mhz & 70 mhz 1.1 & 2.7 [27] 2019 136.09x50 four rectangular cavities 5.025 ghz & 5.125 ghz 50mhz & 65mhz 6.2 & 2.5 [28] 2018 187.2x92.6 reconfigurable siw filter 2.07 ghz 210mhz 2.03 [29] 2018 310x36 substrate integrated waveguide 4.5 ghz & 6.4 ghz 155 mhz & 950mhz 4.08 [30] 2017 170x140 split-ring resonator (srr) 10 ghz 4.2ghz 3.68 [31] 2019 212.73x127.6 5 mechanically tunable filter with dual-post resonators 3.03ghz & 20.75ghz 940mhz & 6.5ghz 2.6 & 3.5 [32] 2017 80x60 ring slot resonator filter 2.875ghz 650mhz 2.2 & 3.1 78x42 shaped filter 2.93ghz, 3.52ghz, 4.31ghz, 5.18ghz & 8.68ghz 542mhz, 1.28ghz, 960mhz, 544mhz & 1.87ghz 4.59, 3.516, 3.064, 3.01 & 5.66 694 r. boddu, k. p. vinay, a. deb, j. s. roy the performance comparison of the current work is compared with other recent works and presented in table 5. from the comparison, the overall dimension of the proposed filtenna is reduced with improved performance in terms of impedance bandwidth and gain characteristics. 6. conclusion this research presents the design and analysis of a compact, reconfigurable π-shaped microstrip filtenna with adaptable spectrum choosing capabilities. reconfigurability is achieved through the incorporation of three switches, simulated using equivalent short-circuited and open-circuited circuits. simulation results reveal that when all switches are activated, the filtering antenna selectively operates within a limited frequency range within the uwb band, mitigating potential interference with adjacent communication systems. the s11 properties reveal that the proposed structure can operate across multiple frequency bands, centered at 2.93 ghz, 3.51 ghz, 3.93 ghz & 4.29 ghz, 4.30 ghz, 5.17 ghz, 8.67 ghz, and 8.91 ghz, depending on the specific switch conditions. the proposed filtering antenna is capable of operating as a brf across the complete ultra-wide band for particular switch combinations. it also demonstrates peak gain values spanning 2.88 dbi to 5.80 dbi, with distinct pattern features. references [1] b. allen, t. brown, k. schwieger, e. zimmermann, w. malik, d. edwards, l. ouvry and i. oppermann, "ultra-wide band: applications, technology and future perspectives", in proceedings of the international workshop on convergent technologies (iwct), 2005, pp.1-6. [2] c. chuang and s. chung, "synthesis and design of a new printed filtering antenna", ieee trans. antennas propag., vol. 59, no. 3, pp. 1036-1042, 2011. [3] p. f. hu, y. m. pan, x. y. zhang and s. y. zheng, "a compact filtering dielectric resonator antenna with wide bandwidth and high gain", ieee trans. antennas propag., vol. 64, no. 8, pp. 3645-3651, 2016. [4] t. l. wu, y. m. pan, p. f. hu and s. y. zheng, "design of a low profile and compact omnidirectional filtering patch antenna", ieee access, vol. 5, pp.1083-1089, 2017. [5] y. zhang, x. y. zhang and y. pan, "low-profile planar filtering dipole antenna with omnidirectional radiation pattern", ieee trans. antennas propag., vol. 66, no. 3, pp.1124-1132, 2018. [6] r. boddu, p. vinay, a. deb and j. s. roy, "a switchable filtering antenna integrated with u-shaped resonators for bluetooth, wlan & uwb applications", int. j. electr. electron. res. (ijeer), vol.10, no. 4, pp. 1225-1232, dec. 2022. [7] r. boddu, a. deb and j. s. roy, "design of microstrip filtering antennas using 4g and 5g wireless networks", j. telecommun. inf. technol. (jtit), vol. 2023, no. 2, pp. 78-83, july 2023. [8] y. m. pan, p. f. hu, x. y. zhang and s. y. zheng, "a low-profile high-gain and wideband filtering antenna with meta-surface", ieee trans. antennas propag., vol. 64, no. 5, pp. 2010-2016, 2016. [9] r. boddu, a. deb and j. s. roy, "design of a compact microstrip filtenna for miniaturized devices to access internet of things using long term evolution", adv. electromagn., vol. 12, no. 4, pp. 10-16, dec. 2023. [10] m. barbuto, f.trotta, f. bilotti and a. toscano, "horn antennas with integrated notch filters", ieee trans. antennas propag., vol. 63, no. 2, pp. 781-785, 2015. [11] g. sun, s. wong, l. zhu and q. chu, "a compact printed filtering antenna with good suppression of upper harmonic band", ieee antennas wirel. propag. lett., vol. 15, pp. 1349-1352, 2016. [12] s. w. wong, t. g. huang, c. x. mao, z. n. chen and q. x. chu, "planar filtering ultra-wideband (uwb) antenna with shorting pins", ieee trans. antennas propag., vol. 61, no. 2, pp. 948-953, 2013. [13] m-c. tang, t. shi and r. w. ziolkowski, "planar ultra-wideband antennas with improved realized gain performance", ieee trans. antennas propag., vol. 64, no. 1, pp. 61-69, 2016. [14] p. ranjan, s. raj, g. upadhyay, s. tripathi and v. s. tripathi, "circularly slotted flower shaped uwb filtering antenna with high peak gain performance", int. j. electron. commun., vol. 81, pp. 209-217, 2017. design of a reconfigurable microstrip filtering antenna using π-shaped filter 695 [15] o. a. nova, j. c. bohórquez, n. m. peña, g. e. bridges, l. shafai, and c. shafai, "filterantenna module using substrate integrated waveguide cavities", ieee antennas wirel. propag. lett., vol. 10, pp. 59-62, 2011. [16] p.k. li, c. j. you, h.f. yu, x. li, y. w. yang and j. h. deng, "co-designed high-efficiency single-layered substrate integrated waveguide filtering antenna with a controllable radiation null", ieee antennas wirel. propag. lett., vol. 17, no. 2, pp. 295-298, 2018. [17] c. lee, j. wu, c.g. hsu, h. chan and h. chen, "balanced band-notched uwb filtering circular patch antenna with common-mode suppression", ieee antennas wirel. propag. lett., vol. 16, pp. 2812-2815, 2017. [18] r. garg, p. bhartia, i. bahl, a. ittipiboon, microstrip antenna design handbook, artech house, 2001. [19] p. chakraborty, j. r. panda, a. deb, s. sahu and j. s. roy, "design of a miniaturized split-ring resonator based uwb notched bandpass filter", prog. electromagn. res. c (pier c), vol. 134, pp. 27-38, june 2023. [20] chen li, z. ma, j. chen, m. wang and j. huang, "design of a compact ultra-wideband microstrip bandpass filter", electronics, vol. 12, no. 7, p. 1728, 2023. [21] q. liu and l. zhu, "design of cross-coupled bandpass filters with flexible coupling via half-mode substrate-integrated waveguide", int. j. rf and microw. comput.-aided eng., vol. 2024, p. 3397878, april 2024. [22] j. s. roy, and b. jecko, "a formula for the resonance frequencies of circular microstrip patch antennas satisfying cad requirements", int. j. microw. mill.-wave comput.-aided eng., vol. 3, no. 1, pp. 67-70, jan 1993. [23] j. a. g. malherbe, microwave transmission line filters, artech house, dedham, mass., 1979. [24] j.-s. hong and m. j. lancaster, microstrip filters for rf/microwave applications, john wiley & sons, inc., 2001. [25] c. yu, w. hong, z. kuai and h. wang, "ku-band linearly polarized omnidirectional planar filtenna", ieee antennas wirel. propag. lett., vol. 11, pp. 310-313, 2012. [26] j. guo, h. liu, b. chen and b. sun, "a dual-band two order filtering antenna", prog. electromagn. res. lett., vol. 63, pp. 99-105, 2016. [27] z. wu, j. chen, a. zhang, x. lu and x. zhang, "design of dual-mode dual-band rectangular waveguide filtering antenna", int. j. rf and microw. comput.-aided eng., vol.44, pp. 322-326, 2019. [28] w. y. sam and z. b, zakaria, "design of reconfigurable integrated substrate integrated waveguide (siw) filter and antenna using multilayer approach", int. j. rf and microw. comput.-aided eng., vol. 28, pp. 1-10, 2018. [29] y. an, h. zhang and l. chen, "dual-band beam scanning filtering antenna using dual-eighth mode substrate integrated waveguide based meta-material structure", int. j. rf and microw. comput.-aided eng., vol. 22, pp. 122-128, 2018. [30] m. barbuto, f. trotta, f. bilotti and a. toscano, "design and experimental validation of dual-band circularly polarized horn filtenna", electron. lett., vol. 53, pp. 641-642, 2017. [31] a. a. c. alves, l. g. d. silva, e. c. v. boas and d. h. spadoti, "continuously frequency-tunable horn filtennas based on dual-post resonators", int. j. antennas propag., vol. 3, pp. 1-12, 2019. [32] h. nachouane, a. najid, f. riouch and a. tribak, "electronically reconfigurable filtenna for cognitive radios", microw. opt. technol. lett., vol. 59, pp. 399-404, 2017. 10414 facta universitatis series: electronics and energetics vol. 35, no 3, september 2022, pp. 393-403 https://doi.org/10.2298/fuee2203393p © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens milica preradović university of banjaluka, faculty of mechanical engineering, banjaluka, republic of srpska, bosnia and herzegovina abstract. this paper presents a comparative analysis of solar energy potential for six different cities, in six different countries in europe: freiburg (germany), graz (austria), maribor (slovenia), banja luka (bosnia and herzegovina), niš (serbia), and athens (greece). data processed in this work are accessed from photovoltaic geographical information system (pvgis). photovoltaic technology is crystalline silicon, and installed peak photovoltaic power is 5 kwp. the aim of the work is to find out whether there are statistically significant differences among the cities in relation to monthly energy production in regard to different types of photovoltaic system (fixed – free standing, fixed – building integrated, inclined, and two axis solar power plants). the work is based on four hypotheses. the estimation of solar energy production in different regions is very important for determination of potential regions suitable for generation of renewable and sustainable energy. key words: solar panels, photovoltaic technology, crystalline silicon, pvgis 1. introduction different factors have impact on the amount of incoming solar radiation to the earth. the most important factors are: geographical latitude, part of the year and day, atmosphere condition, cloud status, surface disposition, and orientation. these information are important for planning and installing of photovoltaic systems [1]. in this paper, solar energy potential for six different locations in europe (freiburg, graz, maribor, banja luka, nis, and athens) has been compared. those six cities were selected in order to see the differences in the amount of produced electricity from photovoltaic systems. cities like freiburg, graz, and maribor have developed pv systems for electricity generation, while banja luka, niš, and athens, are on the ascending path in regard to application and use of solar energy. different types of photovoltaic systems were used for this comparison: fixed – free standing, fixed – building integrated, inclined, and two-axis solar power plants. received january 10, 2022; revised march 19, 2022; accepted march 23, 2022 corresponding author: milica preradović university of banjaluka, faculty of mechanical engineering, 71 vojvode stepe stepanovića, 78000 banjaluka, republic of srpska, bosnia and herzegovina e-mail: milica.preradovic@student.mf.unibl.org 394 m. preradović freiburg and graz have been green model cities from the late 1980s. both cities are midsized, with less than 500 000 inhabitants, and both cities are administrative centers of their regions. freiburg was ‘germany’s environmental capital’ in 1992, for its ecological accomplishments. in 2010, freiburg received another award, ‘federal capital of climate protection’, and in 2012, ‘most sustainable large city of germany’. graz has been awarded many times for its achievements in field of ecology and sustainability (‘greenpeace climate protection award’ in 1993 and the ‘sustainable energy europe award’ in 2008). in 1996, graz has received, as the fist city in europe, the ‘international sustainable city’ award by the european union [2]. freiburg is also called ‘europe’s solar city’. vauban is the neighborhood in freiburg, which is one of the most sustainable city neighborhoods worldwide. in this city district, the majority of houses have solar energy generation on-site (mostly from the rooftop pv panels). the surplus electricity is sold to the municipal grid [3]. the international headship of freiburg in urban sustainability began in the 1970s, after successful anti-nuclear protests in the city [4]. federal state government has intended to build nuclear power plant in the rural area north of the city. because of the strong resistance of the city’s citizens, the government plans have not been realized and therefore, freiburg is called ‘birthplace’ of the environmental movement [5]. freiburg is also one of the sunniest locations in germany. city has incorporated many branches – community, business, energy, scientific comunity, education, construction, tourism with civil society together with the help from local and national levels to become a world leader in solar energy [4]. in graz, in the first half of 1990s, many environmental proposals and projects were arranged (‘ecocity 2000’, ‘municipal energy and climate concept’, ‘eco-profit’, and ‘eco-drive’). at the same time, graz became the first austrian representative of ‘climate alliance of european cities’, with the aim to reduce greenhouse gas emission for 50 per cent until 2010 (with 1987 as the baseline). graz also embraced energy constricting plans for the renovation of buildings and the transition to district heating or renewable fuels. also, city has set in motion a ‘solar initiative’ that supports the feeding-in of solar thermal energy into the district heating system during summer [2]. in graz, the first smart city community is being developed. in this district, new energy technologies for energy self-sufficient cities are established. the smart city graz project is examining innovations like solar modules, solar cooling systems, solar power generation in urban areas, mini-chp-facilities (combined heating and power), integrated façade technologies and smart heat grids, with their application in demonstration buildings [6]. in maribor, the faculty of energy of the university of maribor is an important institution in the disciplines of thermo-energetics, hydropower, nuclear power, renewable and alternative energy sources. the emphasis of the research is on pv systems. the institute of energy technology possess a park of renewable energy sources, which comprises nine tracking pv systems. this renewable resources park aims to study various networking systems for examination of new elements that are components of a smart grid. pv systems in the park are coupled to the distribution grid [7]. another paper from seme et al. [8] presented a overview of performance study of pv systems in slovenia. total of 91% of the pv systems in slovenia have a peak power of 50 kwp or less. this is because of the energy law that prevents installations of higher power [8]. however, in recent years in slovenia, feed-in tariff has influenced the growth of the pv market, which triggered the lower prices of pv technologies [9]. dravske elektrane maribor is the major renewable electricity manufacturer in slovenia. it got a permit for segment five of the zlatoličje solar solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens 395 power plant. this segment of the solar power plant will be installed on the left bank of the outflow canal of the biggest slovenian hydro power plant zlatoličje. a planned yearly production of 5 820 pv modules with a power of 2.7 mwp will be 3 gwh [10]. the republic of srpska holds a huge potential for electricity production utilizing pv systems. the promotion of renewable energy is secured by renewable energy in may 2013 together with the decision of the regulatory commission for energy of the republic of srpska on the charge level and premium prices. the republic of srpska gives a priority to grid connection for renewable energy source operators and proposes incentives for external investors. the solar energy laboratory of the academy of sciences and arts of the republic of srpska was developed in 2012, as an outcome of the scientific research projects on renewable energy sources – particularly solar energy. on one rooftop, in october 2012, fixed on-grid solar power plant (power 2.08 kwp, monocrystalline silicon solar cells) was installed. the solar power plant is equipped with accompanying tools for supervising, acquisition, and data obtaining, and measuring. with the help of this pv power plant, the effects of solar radiation strength, air temperature, wind speed, and air humidity on the energy efficiency of the pv solar power plant in the banja luka region can be constantly observed. two years later, in 2014, another solar system was installed additionally to the solar energy laboratory – solar box, which comprises a metallic base with five pv solar modules made of polycrystalline silicon, with distinct power of 50 w. three solar modules are placed vertically and positioned to the east, south, and west, respectively. the fourth solar module is placed horizontally, and the fifth is at an angle of 33° to the south. additionally, in october 2017, a two-axes tracking pv system was appointed on the roof of the academy of sciences and arts of republic of srpska. this system contains electronic, mechanic, and measuring subsystem. in 2020, in the republic of srpska, 42 electricity producers used pv systems of up to 250 kw [11]. following papers [12,13,14,15,16] contain great amount of material on the solar potenitals to generate electricity from pv solar plants in the republic of srpska. serbia’s solar centers are located in niš, zrenjanin, and novi sad. faculty of sciences and mathematics (fsm) in niš occupies a solar energy laboratory that studies physical features of the flat-plate thermal and hybrid solar radiation collectors, solar cells and pv solar power plants. also, in niš, faculty of electronic engineering possess contemporary laboratory for electronic exploring of rotational pv systems for optimum solar radiation incidence. faculty of technical sciences in novi sad owns renewable and distributed energy sources laboratory devoted to the investigation in the field of renewable energy, mostly in the wind and solar energy conversion and energy storing. in zrenjanin, faculty of technical sciences m. pupin, has a solar energy laboratory that focuses on flat-plate thermal and pv modules [17]. studies [17 – 21] contain relevant information on solar energy in serbia. greece is considered to be very attractive country in terms of investing in solar photovoltaics [22]. solar thermal market in greece is well explained in the [23]. starting in 2011, there were many policy attempts to promote solar investing. those efforts positioned greece at the leading position in global rankings for solar power share in electricity production, in just three years. but domestic pv market decreased in the time period from 2014 to 2017 to 1% of its 2013 range. this widespread closure of solar energy was directly in relationship with regulatory response to economic effects of the policy agenda very plentiful twenty-year-feed-in-tariffs provided for great scale developments, remaining at high levels despite the fact that costs have dropped. policy makers were forced to apply retroactive tariffs cuts. however, it could be fairly related to the energy-linked 396 m. preradović effects of political and economic insecurities, like the construction of new traditional power plants, and constant economic stagnation. another barrier for advanced development of solar power in greece can be contemporary immaturity of the economy, in terms of strategy and trade models, to motivate consumers to generate and accumulate clean energy locally [22]. currenlty, greece generates solar irradiation generally with flat plate collectors for low-temperature heating applications and with pv [24]. 1.1. general information on selected cities geographical information on freiburg, graz, maribor, banja luka, niš, and athens, are given in the following table (tab. 1). athens is at the same time the southernmost and easternmost city from the selected, freiburg is the northernmost and westernmost city from the selected. more details are presented in the following table. table 1 information on selected cities [29] parameter freiburg graz maribor banja luka nis athens geografical latitude (˚) 48.0005 47.071 46.5621 44.772 43.3187 37.982 geographical longitude (˚) 7.832 15.438 15.65 17.188 21.893 23.727 optimal angle for fixed solar power plants (˚) 36 37 36 34 fs: 34* bi: 33* fs: 32* bi: 31* optimal angle for inclined axis (˚) 38 39 38 36 36 34 elevation (m) 263 364 275 167 198 84 * fs – freestanding solar power plants, bi – building integrated solar power plants, only niš and athens have different values for optimal angle for fixed fs and bi solar power plants, all the other cities have the same optimal angles for fs and bi solar power plants. given elevation is accessed from pvgis and is related to free-standing solar power plants solar energy capacity and production of selected countries are presented in the following table (tab. 2). table 2 solar energy capacities and solar energy production in germany, austria, slovenia, bosnia and herzegovina, serbia, and greece in 2019 [25] country solar energy capacity (mw) solar energy production (gwh) germany 49 047 46 392 austria 1 702 1 702 slovenia 264 303 bosnia and herzegovina 22 30 serbia 23 14 greece 2 834 4 429 as it can be seen from this table, germany has the greatest solar energy capacity and the greatest solar energy production, whereas serbia and bosnia have the lowest solar energy capacity and the lowest solar energy production. greater solar energy capacity of the country, means larger solar energy production. solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens 397 2. goals materials and methods the goal of this work is to analyze differences in the projected solar energy production (kwh) between six cities. also, the payback time for the installation of photovoltaic system (5 kw) is calculated for all six cities. [1] have studied solar radiation atlas for banja luka and it was concluded that there are no significant deviations of energy of global and direct solar radiation that fall on the horizontal and optimally positioned surface. in this work differences in solar energy potential were statistically analyzed between following cities: freiburg, graz, maribor, banja luka, niša, and athens. pvgis was established at the joint research centre (jrc) of the european commission within its renewable energies unit as a geographical information systems (gis) tool for the evaluation of performance solar pv systems in different geographical regions. it supplies data for technical, environmental, and socio-economic analysis of solar pv electricity generation [26,27]. the pvgis data base [28] consists of satellite data from four different meteorological sources: photovoltaic geographical information system on climate monitoring satellite application facility – pvgis-cmsaf, surface solar radiation data set heliostat pvgis-sarah, data produced by the european center for medium-range weather forecast – pvgis-era5, and consortium for small scale modelling – pvgiscosmo. the cmsaf data are obtained in this work. the cmsaf solar surface irradiance retrieval is built on radiative transfer calculations, where satellite-derived parameters are used as input. it is the part of the european organization for the exploitation of meteorological satellites (eumestat) ground segment and of the eumestat network of satellite application facilities. pvgis-cmsaf aims to generate climate data records, which are time series of certain length, stability and excellence to discover climate variability and differentiations. available data are from time period between 2007 and 2016 [29]. 2.1. pvgis method – explanation as it is described on the european commission’s science and knowledge service, the first stage in the calculation of solar radiation from satellite is the estimation of satellite images in order to see effects of clouds on the solar radiation, because they can reflect the arriving sunlight and so it comes to reduction of radiation that comes to the earth’s surface. cloud reflectivity can be estimated, when the same satellite image pixel is observed at the identical time every day in a month. the darkest pixel during a month denotes the state of the clearest sky, which means there are no clouds. the cloud reflectivity of other days is estimated relative to the clear-sky day. the same is applied for all hours in one day. so, on that way, effective cloud albedo could be estimated [30]. the second step contains calculations of the solar radiation of clear-sky states, with the help of radiative transfer theory in the atmosphere, together with the information on atmosphere aerosols quantity and the amount of water vapor and ozone concentration, because water vapor and ozone do attract radiation at certain wavelengths. the overall solar radiation is estimated from the cloud albedo and the clear-sky irradiance. this method achieves good results, but may be neglect in some occasions, i.e., when snow covers the ground. the snow could seem like clouds in case that the method determines very low irradiance. the aerosol data used in the method is average over longer period of time, and sudden changes in aerosols (due volcanic eruptions or dust storms) are not took into account in this method [30]. 398 m. preradović previously described method computes global and beam irradiance on a horizontal plane. but units and pv systems are placed at an inclined angle with respect to the flat plane or on tracking systems towards maximization of the incoming in-plane irradiance. in this case, the satellite-based values are not characteristic for the solar radiation obtained at the module surface, and it is crucial to evaluate the in-plane irradiance. for estimation of the values of the beam and diffuse constituents on sloped planes, the irradiance values on the horizontal plane of global and diffuse and/or beam irradiance components are needed. the addition of those gives the in-plane global irradiance on a sloped surface. straight from the solar disc originates the beam irradiance, and its value on a sloped surface can be retrieved from the value on the horizontal plane when position of the sun in the sky and precise placement of the inclined surface is known. however, the estimation of the diffuse irradiance over sloped surfaces cannot be easily calculated, because it can be dispersed by the atmosphere. in this case, models for defining of diffuse component are classified into two categories, isotropic and anisotropic. the first category takes into account equal distribution of diffuse irradiance over the sky. therefore, the diffuse irradiance on a sloped surface is same as the value on the horizontal plane scaled by the factor that depends only on the surface inclination and represents the portion of the sky, which can be seen from the plane’s surface. but the diffuse irradiance is almost never isotropic. the estimation model used in pvgis is anisotropic of two components, it can differentiate among clear and cloudcovered sky states and bright and shaded surfaces [30,31]. 2.2. statistical tests used for the calculations data and results are shown in tables and graphs. the analytical-statistical tool spss, version 24, was used for obtaining the data. applied statistical tests were kruskal wallis test, which determines whether three or more samples do originate from the same population. statistically significant differences were obtained by mann-whitney test that determines whether two samples originate from the same population [32]. the wilcoxon rank-sum test, also known as mann-whitney u test, analyses the differences in population means, when the populations are not normally distributed. first assumption that is necessary is that the population must be continuous, and the second assumption that is necessary, their probability density functions need to have same shape and size [33]. the mann-whitney u test calculates the statistic value u for each group. mathematically, the mann-whitney u statistic for each group is expressed by next equations [34]: 𝑈𝑥 = 𝑛𝑥𝑛𝑦 + ( (𝑛𝑥(𝑛𝑥+1)) 2 ) − 𝑅𝑥 (1) 𝑈𝑦 = 𝑛𝑥𝑛𝑦 + ( (𝑛𝑦(𝑛𝑦+1)) 2 ) − 𝑅𝑦 (2) where, nx describes the number of observations or number of participants of the first group, ny describes the number of observations or number of participants of the second group, rx represents the ranks sum of the first group, and ry is the sum of the ranks of the second group. equations (1) and (2) can be seen as the number of times observation in one sample precede or follow observation in the other sample, after all the score from one group is placed in ascending order. the null hypothesis can be either rejected or accepted, after the calculation of u value and the appropriate statistical threshold (𝛼) [34]. solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens 399 the kruskal-wallis test represents a nonparametric statistical test, which considers differences of three or more independent groups on a single, and not normally distributed data [35]. the starting assumption is that we have k independent samples of volume n1, n2,…, nk, so that n1 + n2 + … + nk = n. after the ranking of samples, the sums of the ranks (r1, r2,…, rk) are obtained. test statistics can be described with the following equation (eq. 3) [36]: 𝑅 = 12 𝑛(𝑛+1) ∑ 𝑅𝑖 2 𝑛𝑖 𝑘 𝑖=1 − 3(𝑛 + 1) (3) the following four hypotheses have built this work: h01: there is no statistically significant difference in monthly solar energy production between the fixed solar panels (free-standing and building integrated) between the cities; h02: there is no statistically significant difference in monthly solar energy production of inclined photovoltaic system between the cities; h03: there is no statistically significant differences in monthly solar energy production between the cities in relation to two-axis solar power plant, and h04: there is no statistically significant differences in monthly solar energy production when all types of solar power plants were compared with each other among the cities. the aim of the test is to reject one hypothesis and to accept the other hypothesis. the p stands for probability and it calculates the probability that difference between the groups is random. the p value can be between 0 and 1 [37]. small p value, provides stronger evidence against h0, and we are more certain that h0 is not true. when the p value is large, h0 becomes more possible, but we cannot be confident that h0 is true. h0 should be rejected, in case when p ≤0.05 [33]. 3. results beforehand the results of statistical analysis, table 3 represents yearly solar energy production (kwh) in selected six cities. athens has the greatest yearly solar energy production among the selected cities, and freiburg has the lowest yearly solar energy production. more details are provided in the table below. table 3 yearly solar energy production (kwh) type of the pv technology freiburg (fr) graz (gr) maribor (mb) banja luka (bl) nis (ni) athens (at) fixed free standing 5316.05 5722.54 5851.62 5575.21 6302.62 8282.53 fixed building integrated 5128.36 5514.94 5640.08 5366.03 6051.62 7952.83 inclined 6661.49 7246.43 7541.29 7240.20 8216.33 11224.55 two-axis 6813.87 7421.63 7725.29 7417.43 8415.07 11550.93 testing the first hypothesis (h01), statistically significant differences were found in testing fixed-free standing photovoltaic systems between the cities (p = .044) and in testing fixed-building integrated photovoltaic systems between the cities (p = .043). high statistically significant differences for both types of fixed photovoltaic systems were 400 m. preradović obtained in monthly solar energy production between freiburg and athens (p = .009), between banja luka and athens (p = .009), between maribor and athens (p = .021), and between graz and athens (p = .018). high statistically significant difference was obtained between niš and athens (p = .0496) for fixed-free standing solar power plant, p = .043 for fixed-building integrated solar power plant). for the inclined photovoltaic systems (h02), statistically significant differences were obtained between maribor and athens (p = .028), between freiburg and athens (p = .011), between graz and athens (p = .021), and between banja luka and athens (p = 0.018). in testing of third hypothesis (h03), high statistically significant difference resulted in testing of monthly solar energy production between freiburg and athens (p = .009). statistically significant difference was obtained between maribor and athens (p = .028), graz and athens (p = .021), and between banja luka and athens (p = .015). results of testing h03 are presented in the table 4. table 4 results of testing of third hypothesis, monthly solar energy production by twoaxis solar power plant between the cities fixed – free standing fixed – building integrated inclined two-axis all .044† .043† .064† .062† mb & fr .273‡ .273‡ .299‡ .299‡ mb & gr .644‡ .644‡ .644‡ .644‡ mb & bl .773‡ .773‡ .817‡ .817‡ mb & ni .564‡ .603‡ .644‡ .603‡ mb & at .021‡ .021‡ .028‡ .028‡ fr & gr .326‡ .326‡ .419‡ .419‡ fr & bl .686‡ .686‡ .525‡ .564‡ fr & ni .248‡ .248‡ .225‡ .273‡ fr & at .009‡ .009‡ .011‡ .009‡ gr & bl .954‡ .954‡ 1.000‡ .954‡ gr & ni .488‡ .488‡ .525‡ .488‡ gr & at .018‡ .018‡ .021‡ .021‡ bl & ni .386‡ .386‡ .419‡ .453‡ bl & at .009‡ .009‡ .018‡ .015‡ ni & at .0496‡ .043‡ .065‡ .065‡ †kruskal wallis test ‡ mann-whitney test finally, for the fourth hypothesis (h04), high statistically significant difference (p = .000) was obtained when fixed-building integrated, inclined, and two-axis solar power plants were compared with each other. only in athens is there a statistically significant difference (p = .029) in testing monthly solar energy production of fixed-building integrated, inclined, and two-axis solar power plants. in all the other cities, there is no statistically significant difference when those three systems were compared with each other. results for testing of fourth hypothesis are presented in the table 5. solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens 401 table 5 monthly energy production comparison between all types of installed solar power plants location fixed – free standing & fixed – building integrated inclined & two-axis fixed – building integrated & inclined & two-axis all .415‡ .655‡ .000† fr .488‡ .603‡ .140† gr .419‡ .686‡ .135† mb .525‡ .644‡ .150† bl .644‡ .686‡ .143† ni .644‡ .729‡ .166† at .564‡ .686‡ .029† † kruskal wallis test ‡ mann-whitney test in the following paragraphs, the payback time for installed fixed-building integrated photovoltaic system (5 kwp) has been calculated. also, information about annual incident solar energy (optimal angle), specific yearly electricity production, price of photovoltaic installation, and electricity prices in typical household (four members and yearly electricity demand 6 000 kwh) are shown in table 6. table 6 calculation of payback time for installed photovoltaic system, 5 kw, for one typical household with annual electricity demand of 6 000 kwh location yearly incident solar energy under optimal angle (kwh/m2) [27] specific yearly electricity production (kwh/kwp) electricity price that one household pays in one year (4 members, demand 6 000 kwh), country’s average for march 2021* payback time for installed photovoltaic system, with power 5 kw freiburg 1331.72 992 1 920 2.60 graz 1442.69 1145 1 260 3.97 maribor 1472.76 1167 1 080 4.63 banja luka 1433.46 1096 552 9.06 nis 1662.62 1239 480 10.41 athens 2108.31 1557 1 140 4.38 installation prices for photovoltaic system ‘key in hand’ for the selected cities are approximately the same (1 000 €/kwp), because of the bounded components. this is related to the systems with the power to 10 kw, which are mostly used in households for the own energy consumption. * country’s average electricity price as for march 2021, according to [38]: germany 0.32 €/kwh, austria 0.21 €/kwh, slovenia 0.18 €/kwh, bosnia and herzegovina 0.092 €/kwh, serbia 0.080 €/kwh, and greece 0.190 €/kwh. investment payback time is the shortest for the countries where the electricity price is the highest. the payback time is calculated by dividing investment costs with electricity price that one household pays in one year. 402 m. preradović 4. conclusion based on the presented research, following conclusions can be made: i. germany has the largest solar energy capacity and solar energy production; ii. between freiburg and athens, between banja luka and athens, between maribor and athens, graz and athens, and between niš and athens, there is a high statistically significant difference when the energy production of fixed-free standing and fixed-building integrated photovoltaic systems were tested; iii. statistically significant differences were obtained in testing of inclined photovoltaic system between following cities: maribor and athens, between freiburg and athens, between graz and athens, and between banja luka and athens; iv. in testing of produced energy amount by two-axis solar power plant, following results were obtained: high statistically significant difference between freiburg and athens, statistically significant difference between maribor and athens, graz and athens, and banja luka and athens; v. in athens, there is a statistically significant difference when monthly solar energy production was tested between three types of solar power plants (fixedbuilding integrated, inclined, and two-axis solar power plants), and vi. germany has the highest electricity price, and serbia the lowest electricity price. accordingly, in germany the payback time for installed photovoltaic system of 5 kw is the shortest, and in serbia the longest. references [1] t. m. pavlović, d. lj. mirjanić, i. s. radonjić, l. s. pantić and g. i. sazhko, "solar radiation atlas in banja luka in the republic of srpska", contemporary materials, vol. 12, no. 1, pp. 39-49, 2021. [2] h. rohracher and p. späth, "the interplay of urban energy policy and socio-technical transitions: the eco-cities of graz and freiburg in retrospect", urban studies, vol. 51, no. 7, pp. 1415–1431, 2014. [3] green city: freiburg, germany. (n.d.). https://www.greencitytimes.com/freiburg/, visited on february, 19. 2022. [4] a. thomas, freiburg solar region. https://wwf.panda.org/wwf_news/?204419/freiburg-green-city, visited on february 19. 2022. [5] s. fastenrath and b. braun, "sustainability transition pathways in the building sector: energy-efficient building in freiburg (germany)", applied geography, vol. 90, no. 1, pp. 339–349, 2018. [6] j. fälchle and photolia de. n.d. ‘energy innovation austria 4/2016’16. [7] s. seme, k. sredensek and z. praunseis, "smart grids and net metering for photovoltaic systems". in proceedings of the ieee international conference on modern electrical and energy systems (mees). kremenchuk, 2017, pp. 188–191. [8] s. seme, k. sredenšek, b. štumberger and m. hadžiselimović, "analysis of the performance of photovoltaic systems in slovenia", solar energy, vol. 180, pp. 550–558, 2019. [9] p. virtič and r. kovačič lukman, "a photovoltaic net metering system and its environmental performance: a case study from slovenia", j. clean. prod., vol. 212, pp. 334–342, 2019. [10] "dravske elektrane maribor obtains building permit for first part of solar park on canals of the zlatoličje and formin hydro power plants", hse. retrieved 19 february 2022 (https://www.hse.si/en/dravskeelektrarne-maribor-obtains-building-permit-for-first-part-of-solar-park-on-canals-of-the-zlatolicje-andformin-hydro-power-plants/). [11] t. pavlović and d. lj. mirjanić, solar energy and lighting in the republic of srpska. in the sun and photovoltaic technologies (pp. 383–411). springer international publishing. [12] t. m. pavlović, d. d. milosavljević, d. mirjanić, l. s. pantić, i. s. radonjić and d. pirsl, "assessments and perspectives of pv solar power engineering in the republic of srpska (bosnia and herzegovina)", renew. sust. energy rev., vol. 18, pp. 119–133, 2013. https://www.greencitytimes.com/freiburg/ https://wwf.panda.org/wwf_news/?204419/freiburg-green-city solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens 403 [13] energy strategy of republic of srpska up to 2030, banja luka, https://www.vladars.net/eng/vlada/ministries/ miem/documents/energy%20strategy%20of%20the%20republic%20of%20srpska%20up%20to%202030_4 59254634.pdf, visited on february 9. 2022. [14] t. pavlović, i. radonjić, d. milosavljević, l. pantić and d. pirsl, "assessment and potential use of concentrating solar power plants in serbia and republic of srpska", thermal sci., vol. 16, no. 3, pp. 931–945, 2012. [15] t. pavlović, d. milosavljević, d. mirjanić, l. pantić and d. pirsl, "assesment of the possibilities of building integrated pv systems of 1 kw electricity generation in banja luka", contemporary materials, vol. 2, no. 3, pp. 167–176, 2013. [16] d. d. milosavljević, t. m. pavlović, d. lj. mirjanić and d. divnić, "photovoltaic solar plants in the republic of srpska current state and perspectives", renew. sust. energy rev., vol. 62, pp. 546–560, 2016. [17] t. m. pavlović, y. tripanagnostopoulos, d. lj. mirjanić and d. d. milosavljević, "solar energy in serbia, greece and the republic of srpska", academy of sciences and arts of the republic of srpska, 2015. [18] m. golusin, z. tesić, and a. ostojić, "the analysis of the renewable energy production sector in serbia", renew. sust. energy rev., vol. 14, no. 5, pp. 1477–1483, 2010. [19] l. pantić, t. pavlović and d. milosavljević, "a practical field study of performances of solar modules at various positions in serbia", thermal sci., vol. 19, pp. 511–523, 2015. [20] t. pavlović, d. milosavljević, m. lambić, v. stefanović, d. mančić and d. piršl, "solar energy in serbia", contemporary materials, vol. 2, no. 2, pp. 204–20, 2011. [21] s. prvulović, d. tolmac, m. matić, lj. radovanović, and m. lambić, "some aspects of the use of solar energy in serbia", energy sources, part b: econ. plan. policy, vol. 13, no. 4, pp. 237–245. [22] a. nikas, v. stavrakas, a. arsenopoulos, h. doukas, m. antosiewicz, j. witajewski-baltvilks and a. flamos, "barriers to and consequences of a solar-based energy transition in greece", environ. innov. soc. transit., vol. 35, pp. 383–399, 2020. [23] a. a. argiriou and s. mirasgedis, "the solar thermal market in greece—review and perspectives", renew. sust. energy rev., vol. 7, no. 5, pp. 397–418, 2003. [24] e. bellos and c. tzivanidis, "solar concentrating systems and applications in greece – a critical review", j. clean. prod., vol. 272, p. 122855, 2020. [25] irena, renewable energy statistics, the international renewable energy agency, abu dhabi, (2021) 43. [26] l. pantić, t. pavlović, d. milosavljević, d. mirjanić, i. radonjić and m. radovic, "electrical energy generation with differently oriented photovoltaic modules as façade elements", thermal sci., vol. 20, no. 4, pp. 1377–1386, 2016. [27] t. pavlović, d. milosavljević and d. pirsl, "simulation of photovoltaic systems electricity generation using homer software in specific locations in serbia", thermal sci., vol. 17, no. 2, pp. 333–347, 2013. [28] photovoltaic geographical information system, https://re.jrc.ec.europa.eu/pvg_tools/en/tools.html, visited on december, 10. 2021. [29] k. cieslak and p. dragan, "comparison of the existing photovoltaic power plant performance simulation in terms of different sources of meteorological data", edited by l. lichołai, b. dębska, p. miąsik, j. szyszka, j. krasoń, and a. szalacha. e3s web of conferences, 2018, vol. 49, 00015. [30] european commission, eu science hub pvgis data sources and calculation methods, https://jointresearch-centre.ec.europa.eu/pvgis-photovoltaic-geographical-information-system/getting-startedpvgis/pvgis-data-sources-calculation-methods_en visited on march, 1. 2022. [31] t. muneer, "solar radiation model for europe", build. serv. eng. res. technol., vol. 11, no. 4, pp. 153–163, 1990. [32] s. jakšić and s. maksimović. 2, verovatnoća i statistika: teorijske osnove i rešeni primeri, arhitektonskograđevinsko-geodetski fakultet, banja luka, 2020. [33] w. navidi, statistics for engineers and scientists. new york: mcgraw-hill, 2011. [34] n. nachar, "the mann-whitney u: a test for assessing whether two independent samples come from the same distribution", tutor. quant. methods psychol., vol. 4, no. 1, pp. 13–20, 2008. [35] p. e. mckight and j. najab, "kruskal-wallis test" in the corsini encyclopedia of psychology, edited by i. b. weiner and w. e. craighead. hoboken, nj, usa: john wiley & sons, inc. [36] m. lovrić, j. komić and s. stević, statistička analiza: metodi i primjena, 2. izmijenjeno i dopunjeno izdanje. narodna i univerzitetska biblioteka republike srpske, banja luka, 2017. [37] t. dahiru, "p-value, a true test of statistical significance? a cautionary note", annals of ibadan postgraduate medicine, vol. 6, no. 1, pp. 21–26, 2011. [38] global petrol prices, https://www.globalpetrolprices.com/electricity_prices/, visited on december, 20. 2021. https://re.jrc.ec.europa.eu/pvg_tools/en/tools.html https://www.globalpetrolprices.com/electricity_prices/ 12536 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 655 – 669 https://doi.org/10.2298/fuee2404655m © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design of multiple-beam microstrip smart antenna for massive mimo applications manisha mishra, anindita khan, jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india orcid ids: manisha mishra https://orcid.org/0000-0002-9635-4000 anindita khan https://orcid.org/0009-0005-8228-5568 jibendu sekhar roy https://orcid.org/0000-0002-3571-2708 abstract. to improve the capacity of a radio communication system, mimo (multiple input, multiple output) wireless technology is used, where multiple antennas are installed at both the transmission and reception ends. at the receiving end, by combining the received signals from all antennas, the fading effect can be reduced, which increases signal-to-noise ratio (snr) and minimizes the error rate. wireless networks in multi-user environments need massive mimo (mmimo) systems as multiple antenna networks. the mmimo installs large antenna arrays in the base stations, using a large number of transceivers with other rf modules to produce a very narrow and targeted radiation beam with reduced interference. this paper describes the method of producing multiple targeted radiation beams using an mmimo smart antenna system with a microstrip array. the sub-6 ghz band of 5 ghz is used for the design of multiple beam smart antennas. the adaptive signal processing algorithm least mean square (lms) is used for the beamforming of microstrip smart antennas. the number of antenna elements in the smart antenna is varied from 30 to 45. in case of three beam formation, the achieved maximum side lobe level (sll) is -13 db and minimum null depth is -27 db. in case of four beam formation, the achieved maximum side lobe level (sll) is -12 db and minimum null depth is -25 db. there was no deviation of the generated beam directions from the target user directions. key words: massive mimo, microstrip antenna, multiple beam, signal processing, smart antenna 1. introduction and related research work the mimo technology uses multiple antennas at both the transmitter end and receiver end to enhance the capacity and quality of the rf link using spatial diversity and spatial multiplexing [1-3]. the key concept of the massive mimo system is to equip base stations with a large antenna array to serve many users simultaneously with the same time-frequency received february 27, 2024; revised april 28, 2024; accepted june 26, 2024 corresponding author: jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india e-mail: drjsroy@kiit.ac.in https://orcid.org/0000-0002-9635-4000 https://orcid.org/0009-0005-8228-5568 https://orcid.org/0000-0002-3571-2708 656 m. mishra, a. khan, j. s. roy resource. in massive mimo, advanced antenna technologies are used to produce radiation beams towards the predefined directions (fig. 1), which reduces interference for other users by deploying larger antenna arrays [4-7]. one of the key building blocks of 5g new radio (5g nr) is mmimo, which achieves multiple benefits to both network operators and end users [8, 9]. the key features of mmimo are spatial diversity, spatial multiplexing, and beamforming. mmimo systems use large antenna arrays at the base station for highly directive beam generation [10]. beamforming technology in 5g mmimo system can reduce noise. several approaches are reported to generate highly directive beams in a mmimo system [11-17]. in [11], for a massive mimo system, the performances of both microstrip and dipole arrays are reported. in [12], a 12-port hybrid 5g mmimo array is described for different lte bands. fig. 1 multiple radiation beams of a massive mimo system different types of beamforming techniques in 5g mmimo system are described [13, 14]. the report of [14] includes circular, planar, and conformal arrays. in [15], a full-rank channel matrix is used for a mmimo antenna system in the presence of a small number of virtually positioned scatterers. in the review paper [16], the design and development of antenna techniques for future 5g mmimo system are described. a metamaterial-loaded 64-element antenna system is designed in [17] for high efficiency and gain for millimeterwave mmimo systems. the smart antenna is one of the potential candidates for the generation of a beam towards the target user and a null towards the interferer for an mmimo radio communication. the smart antenna enhances security, spectral efficiency, and power savings in a cellular network [18-24]. in [18], the design considerations and applications of smart antennas in wireless communication are described. various signal processing algorithms are reported for the beamforming of smart antennas, whereas the implementation of the least mean square (lms) algorithm and its variants [19, 20] is easier compared to other algorithms. recently, deep learning methods have been used for the beamforming of smart antennas [21, 22]. the machine learning methods are also used for the bean formation of smart antennas [23]. for low energy consumption, an optimized thinned smart antenna design is reported in [24]. microstrip antenna is one of the promising candidates for massive mimo system. smart antenna using microstrip antenna is reported in [25] for sector beamforming for 28ghz millimeterwave mobile communication. a hybrid beamforming method, using chebyshev tapering, is presented in [26] for the application to design of multiple-beam microstrip smart antenna for massive mimo applications 657 massive mimo systems. in [27], a beam design method is proposed where one beam is used to serve multiple transmissions, thus reducing the overhead of frequency beam adjustment. this method uses a fractional programming based algorithm to solve the problem. the improvement methods for the error rate in massive mimo beamforming are reported in [28]. the beamforming design for a massive mimo integrated sensing and communication system with imperfect channel state information was investigated in [29]. an orthogonal beamforming technique for multi-user massive mimo system is proposed in [30]. the previous reports were devoted to single beam generation in a mmimo system, which is not sufficient in a multi-user environment, and also in most of the papers, isotropic antenna elements are used for the smart antenna array. in this paper, to serve a large number of users in a 5g nr mmimo system, a method of simultaneous multiple beam generation (one beam per user) from the same set of antenna elements, is proposed. a smart antenna of microstrip antennas is considered for the generation of targeted beams with multiple nulls towards the interferer. because of thin and low profile nature of microstrip antennas, these are attractive for large array applications. the analysis of array factor for both an eplane microstrip array and an h-plane microstrip array are presented. multiple beams of microstrip smart antennas are formed using lms algorithm in various user directions for particular null directions (interferer). 2. theoretical background of microstrip antenna the multiple beams of a microstrip smart antenna are generated using the adaptive signal processing lms algorithm. the basic form of a microstrip antenna is a radiating metallic patch fabricated on a dielectric substrate backed by a ground plane, as shown in fig. 2(a), and it radiates only on the upper hemisphere [31, 32]. the antenna is excited by a co-axial sma connector. microstrip antennas are used in miniaturized microwave and millimeter-wave systems. in a linear array of microstrip antennas, the antennas are arranged in a line with uniform inter-element spacing, as shown in fig. 2(b). (a) (b) fig. 2 (a) microstrip antenna (b) multiple beams of a linear microstrip array https://www.sciencedirect.com/topics/computer-science/fractional-programming 658 m. mishra, a. khan, j. s. roy the resonance frequency at tmmn mode for a microstrip antenna of dimension lxw can be calculated using the formula [32] 𝑓𝑟𝑚𝑛 = (c 2⁄ √ɛe )√[(( mπ l ) 2 + ( nπ w ) 2 ] (1) where, ‘c’ is the free-space velocity of light and for a dielectric substrate of thickness ‘t’, the effective dielectric constant (ɛr) is given by [32] ɛ𝑒 = (1 2⁄ ){(ɛ𝑟 + 1) + (ɛ𝑟 − 1) (1 + 12𝑡 𝑊 ) −1 2⁄ } (2) a microstrip array may be an e-plane array or an h-plane array, depending on the orientations of the patches and the mutual coupling between the antennas. the orientations of microstrip patches in e-plane and h-plane arrays are shown in fig. 3. fig. 3 e-plane and h-plane microstrip antenna arrays the radiation pattern of a microstrip antenna can be calculated using fig. 4. the radiating slots due to the fringing fields radiate on the upper hemisphere. fig. 4 diagram to calculate radiation field of a microstrip antenna design of multiple-beam microstrip smart antenna for massive mimo applications 659 the far field at a distance ‘r’ from the origin for a single slot is given by [31, 32]. 𝐸𝜑 = −𝑗2𝑉0𝑊𝑘0 (𝑒−𝑗𝑘0𝑟 4𝜋𝑟⁄ ) 𝐹(𝛳, 𝜑)𝐸𝛳 = 0 (3) v0=tey is the voltage across the radiating slot and ey is calculated considering a rectangular microstrip cavity, excited at fundamental tm10 mode. where 𝐹(𝛳, ∅) = sin ( 𝑘0ℎ 2 sinθ 𝑐𝑜𝑠∅ ) 𝑘0ℎ 2 sinθ 𝑐𝑜𝑠∅ sin ( 𝑘0𝑊 2 𝑐𝑜𝑠𝛳) 𝑘0𝑊 2 𝑐𝑜𝑠𝛳 𝑠𝑖𝑛𝛳 (4) for θ=π/2, f(φ), the eplane (x-z plane) pattern can be determined from 𝐹(∅) = sin ( 𝑘0ℎ 2 𝑐𝑜𝑠∅) 𝑘0ℎ 2 𝑐𝑜𝑠∅ cos ( 𝑘0𝐿 2 𝑐𝑜𝑠∅) (5) slot width, h≈t/2, if t=1.6mm, and h=0.8mm similarly, for φ=π/2, f(θ), will represent h-plane(y-z plane),which is 𝐹(𝜃) = sin ( 𝑘0𝑊 2 𝑐𝑜𝑠𝜃) 𝑘0𝑊 2 𝑐𝑜𝑠𝜃 𝑠𝑖𝑛𝜃 (6) depending on the orientation of microstrip patches in antenna array, e-plane or h-plane radiations are calculated. a rectangular microstrip antenna is designed at 5ghz using cst microwave studio. the simulated s11 parameter and vswr (voltage standing wave ratio) plots are presented in fig. 5(a) and (b) respectively. the antenna resonates at 5.016 ghz with return loss of 25.69 db. the 2:1 vswr bandwidth of the patch antenna is 200 mhz. the rt-duroid substrate of dielectric constant 2.32, height 1.6 mm, and loss tangent [tan(δ)] 0.0005 is chosen for simulation. a four-element microstrip array is simulated using cst microwave studio. the patch elements are connected by microstrip lines and excited by an sma connector (fig. 6). the inter-element spacing in the array is 0.5λ. the s11 parameter and vswr plot of the four-element patch array, for different feed line width (wf in mm), are shown in fig. 7 (a) and (b) respectively. 660 m. mishra, a. khan, j. s. roy (a) b) fig. 5 simulated (a) s-parameter and (b) vswr of the microstrip patch antenna fig. 6 diagram of the simulated microstrip antenna array design of multiple-beam microstrip smart antenna for massive mimo applications 661 (a) (b) fig. 7 (a) s11 parameter (b) vswr the radiation pattern of the microstrip array is shown in fig. 8. fig. 8 radiation pattern of four-element microstrip array 662 m. mishra, a. khan, j. s. roy 3. multiple beam formation by microstrip smart antenna for the multiple beam formation, adaptive signal processing algorithm lms is used. lms is a stochastic gradient-based algorithm. the weights of the algorithm are updated in every iteration using the formula [33, 34] 𝑤(𝑛 + 1) = 𝑤(𝑛) + 𝜇 𝑒∗(𝑛)𝑥(𝑛) (7) the algorithm minimizes the error e(n) between the array output y(n)= 𝑤𝐻(𝑛)𝑥(𝑛) and the desired signal d(n) as 𝑒(𝑛) = 𝑑(𝑛) − 𝑤𝐻(𝑛)𝑥(𝑛) (8) here, wh(n) is the hermitian transpose or conjugate transpose of weight w(n). the bound for the step-size parameter µ is given by 𝜇 < 1 2 𝑡𝑟𝑎𝑐𝑒[𝑅𝑥𝑥] (9) the rxx is the correlation matrix. the lms algorithm's main benefit is that it has a low level of computing complexity than other adaptive algorithms. the lms algorithm is used for the generation of beams towards the desired beam directions (bd) and for the generation of null directions (nd) towards the undesired interferers. the array factor (af) for a linear microstrip array of n microstrip antennas and inter-element spacing of ’d’, arranged in the e-plane, is 𝐴𝐹 = ∑ 𝐹(∅) 𝑒𝑗(𝑛−1)( 2𝜋𝑑 𝜆 𝑐𝑜𝑠𝜃+𝛼) 𝑁 𝑛=1 (10) where, f(ϕ) is given by eq. (5). the same expression of eq. (10) is valid for h-plane microstrip array where f(ϕ) will be replaced by f(θ) of eq. (6). the progressive phase shift of the array is ‘α’ at the wavelength ‘λ’. the normalized array factor is 𝐴𝐹𝑛𝑜𝑟𝑚 = |𝐴𝐹| |𝐴𝐹𝑚𝑎𝑥|⁄ (11) the afmax is the maximum value of af. the flow chart for the implementation of adaptive signal processing algorithm for multiple beam generation using microstrip smart antenna is shown in fig. 9. the input parameters are frequency, inter-element spacing in the antenna array, number of microstrip antennas, dielectric constant, and height of the microstrip substrate. here, eq. (1) and eq. (2) are used to calculate the width (w) and length (l) of the patch antenna at the given frequency. the calculated length and width of the microstrip antenna at 5 ghz are 20.61 mm (l) and 18 mm (w). the values of the different parameters used in the simulation are presented in table 1. design of multiple-beam microstrip smart antenna for massive mimo applications 663 fig. 9 flow chart for multiple beam formation of microstrip smart antenna using lms algorithm table 1 input parameters input parameters values frequency 5 ghz number of microstrip antennas in the array (n) n=30, 35, 40, 45 element spacing in the antenna array 0.5λ dielectric constant of the substrate (rt-duroid) 2.32 thickness of the dielectric substrate 1.6 mm channel additive white gaussian noise (awgn) snr 20 db no.of iteration 500 eq. (10) with eq. (6) is the cost function for af calculation for an h-plane microstrip smart antenna. here, using the lms algorithm, three and four beams are generated for a microstrip smart antenna. various values of the number of microstrip antennas in the array (n), beam directions (bd) and null directions (nd) are considered. the h-plane radiation patterns for three beams are shown in figs. 10(a) -11(b). in fig. 10(a) n= 30, bd=-450, 00, 664 m. mishra, a. khan, j. s. roy 300, and nd=-300,-150,100. in fig. 10(b) n=35, bd= -600, 200, 450 and nd=-150, 100, 800. in fig. 11(a) n=35, bd=-550, -200, 600 nd= -250,-150,100, and in fig 11(b) n=30, bd= 350, 00, 600 nd= -600, -100, 150. (a) (b) fig. 10 h-plane pattern for three beams for microstrip smart antenna (a) n=30, (b) n=35 (a) (b) fig. 11 h-plane pattern for three beams for microstrip smart antenna (a) n=35, (b) n=30 in the above three beam formations, number of bds are equal to number of nds (interferer), but it is not mandatory, that is, while generating three beams, nds may be 1 or 2 or 3 or 4. the h-plane radiation patterns for four beams are shown in figs. 12(a) -13(b). in fig. 12(a) n=30, bd= -600, 00, 300, 500, and nd=-100, 100, 250. in fig. 12(b) n=40, bd= -600, -250, 300, 600, and nd=-100, 100. in fig. 13(a) n=40, bd=-550, -150, 100, 450, and nd= 100, 250, and in fig 13(b) n=35, bd= -650, -150, 00, 550, and nd= -400, 250. design of multiple-beam microstrip smart antenna for massive mimo applications 665 (a) (b) fig. 12 h-plane pattern for four beams for microstrip smart antenna (a) n=30, (b) n=40 (a) (b) fig. 13 h-plane pattern for four beams for microstrip smart antenna (a) n=40, (b) n=35 the results are tabulated in table 2. the hpbw, null depth and sllmax , obtained for generated multiple beams are included in the table. the multiple beams are generated on the both sides of the broadside direction of the array. null depth is one of the important parameters for mmimo applications which signifies how much interference is occurred by the user signal. for multiple beam formation, for an e-plane microstrip smart antenna, eq. (10) with eq. (5) is the cost function for af calculation. the same parameter values, mentioned in table 1, are considered for the formation of three and four beams using a microstrip smart antenna. the e-plane radiation patterns for three and four beams are shown in fig. 14 and fig. 15 respectively. in fig. 14(a) n=35, bd= 00, 200, 600, and nd=-600, -300, 100. in fig. 14(b) n=40, bd=-550, -10, 150 and nd=100, 300. in fig. 15(a) n=40, bd=-450, -100, 00, 300, and nd= -700, -400, 350, 450, and in fig 15(b) n=45, bd= -200, -100, 350, 650, and nd=-450, -300, 150. 666 m. mishra, a. khan, j. s. roy table 2 results for h-plane microstrip smart antenna no. of beams parameters null depth sllmax 3 beams n= 30, bd=-450, 00, 300, nd=-300,-150,100 -70db -37db -48db -12 db 3 beams n=35, bd= -600, 200, 450, nd=-150, 100, 800 -32db -31db -27db -13 db 3 beams n=35, bd=-550, -200, 600, nd= -250,-150,100 -34db -32db -30db -12.5 db 3 beams n=30, bd= -350, 00, 600 nd= -600, -100, 150. -46db -73db -40db -12 db 4 beams n=30, bd=-600,00,300,500 nd=-100,100,250 -25db -38db -37db -11.5 db 4 beams n=40, bd= -600, -250, 300, 600 nd= -100, 100 -35db -57db -12 db 4 beams n=40, bd=-550, -150, 100, 450, nd= -100, 250 -32db -40db -11 db 4 beams n=35, bd= -650, -150, 00, 550, nd= -400, 250 -33db -40db -12 db (a) (b) fig. 14 e-plane pattern for four beams for microstrip smart antenna (a) n=35, (b) n=40 (a) (b) fig. 15 e-plane pattern for four beams for microstrip smart antenna (a) n=40, (b) n=45 design of multiple-beam microstrip smart antenna for massive mimo applications 667 the different parameters, obtained for e-plane microstrip smart antenna are tabulated in table 3. table 3 results for e-plane microstrip smart antenna no. of beams parameters null depth sllmax 3 beams n=35, bd=00, 200, 600 , nd=-600, -300, 100 -45db -55db -40db -12 db 3 beams n=40, bd=-550, -10, 150 , nd=100, 300 -27db -32db -13 db 4 beams n=40, bd=-450,-100,00, 300, nd=-700,-400, 350, 450 -70db -42db -43db -48db -11.5db 4 beams n=45, bd=-200, -100, 350, 650, and nd=-450, -300, 150 -33db -52db -42db -11 db the graph for square errors both for an h-plane array and an e-plane are array are shown in fig. 16(a) and fig. 16(b). here, in both the cases, n=35, bd=-600, -250, 250, 400, and nd=100, -100. (a) (b) fig. 16 error graphs for microstrip smart antenna number of iteration used in simulation is 500. 4. conclusion in a mmimo system, where microstrip antennas are closely spaced in a large antenna array, an h-plane array may be useful to avoid the mutual coupling effect, because the hplane coupling effect is less than the e-plane coupling. in order to have a basic idea, a microstrip antenna and a four-element microstrip antenna array are simulated using cst software. their results are also presented. but this software doesn’t consider signal processing algorithm, and hence, beam control regarding main beam generation in the desired direction and null generation towards the interferer is not possible. the results presented here are the best results obtained after a number of simulations in each and every 668 m. mishra, a. khan, j. s. roy case. the method presented here can generate multiple beams both when the target users are close and when the target users are far from each other. in mimo system transmitting antenna radiates multiple beams towards the target receiving antenna and the antennas are diversity antennas not an array but in a mmimo systems, the antenna system is an antenna array and radiation beam is sent single targeted beam per user basis. therefore, the investigations, presented in this paper, are useful for mmimo communication. also, the proposed multiple beamforming method is well suited for millimeter wave massive mimo. references [1] a. j. paulraj, d. a. gore, r. u. nabar and h bolcskei, "an overview of mimo communications-a key to gigabit wireless", in proceedings of the ieee, 2024, vol. 92, no. 2, 198–218. [2] m. r. amin and s. d. trapasiya, "space time coding scheme for mimo system-literature survey", procedia eng. vol. 38, pp. 3509–3517, 2012. [3] s. yang and l. hanzo, "fifty years of mimo detection: the road to large-scale mimos", ieee communication survey tutor, vol. 17, pp. 1941–1988, 2015. [4] e. g. larsson, o. edfors, f. tufvesson and t.l. marzetta, "massive mimo for next generation wireless systems", ieee communication magazine, vol. 52, no. 2, pp. 186–195, 2014. [5] p. ranjan, s. yadav and a. bage, "dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications", facta universitatis series energetics and electronics, vol. 36, no. 1, pp. 43–51, 2023. [6] y. su, h. gao and s. zhang, "secure massive mimo system with two-way relay cooperative transmission in 6g networks", eurasip journal on wireless communications and networking, vol. 2023, no. 73, pp. 1–22, 2023. [7] a. khan and j. s. roy, "thinned smart antenna of a semi-circular dipole array for massive mimo systems", advanced electromagnetics, vol. 12, no. 4, pp. 17–25, dec. 2023. [8] f. wen, h. wymeersch, b. peng, w. p. tay, h. c. so and d. yang, "a survey on 5g massive mimo localization", digit. signal process. vol. 94, pp. 21–28, 2019. [9] m. belgiovine, k. sankhe, c. bocanegra, d. roy and k. r. chowdhury, "deep learning at the edge for channel estimation in beyond-5g massive mimo", ieee wireless communication. vol. 28, pp. 19–25, 2021. [10] j. hoydis, s. brink and m. debbah, "massive mimo in the ul/dl of cellular networks: how many antennas do we need?", ieee j selected areas communication, vol. 31, no. 2, pp. 160–171, 2023. [11] c.-m. chen, v. volski, l.v.d. perre, g.a.e. vandenbosch and s. pollin, "finite large antenna arrays for massive mimo: characterization and system impact", ieee trans. antennas propag, vol. 65, no. 12, pp. 6712–6720, 2017. [12] y. li, c.-y.-d. sim, y. luo and g. yang, "12-port 5g massive mimo antenna array in sub-6ghz mobile handset for lte bands 42/43/46 applications", ieee access, vol. 6, pp. 344–354, 2017. [13] e. ali, m. ismail, r. nordin and n. f. abdulah, "beamforming techniques for massive mimo systems in 5g: overview, classification, and trends for future research", frontiers of information technology & electronic engineering, vol. 18, no. 6, pp. 753–772, 2017. [14] a. m. saleh, m. m. elmesalawy, k. r. mahmoud and i. i. ibrahim, "impact of different finite mimo array geometries on system throughput with considering mutual coupling and edge effect between array elements", ain shams engg. journal, vol. 12, no.3, pp. 2823–2838, 2021. [15] k. honda, "over-the-air testing of a massive mimo antenna with a full-rank channel matrix", sensors, vol. 22, no. 3, pp. 1–12, feb. 2022. [16] s. k. ibrahim, m. j. singh, s. s. al-bawri, h. h. ibrahim, m. t. islam, m. s. islam, a. alzamil and w. m. abdulkawi, "design, challenges and developments for 5g massive mimo antenna systems at sub 6ghz band: a review", nanomaterials, vol. 13, no. 3, pp. 1–40, jan 2023. [17] a. a. musaed, s. s. al-bawri, w. m. abdulkawi, k. aljaloud, z.yusoff and m. t. islam, "high isolation 16-port massive mimo antenna based negative index metamaterial for 5g mm-wave applications", scientific reports, vol. 14, no. 290, pp. 1–11, jan. 2024. [18] m. chryssomallis, "smart antennas", ieee antennas & propagation magazine, vol. 42, no. 3, pp. 129– 136, june 2000. [19] veerendra and m. bakhar, "a novel lms beamformer for adaptive antenna array", procedia computer science, vol. 115, pp. 94–100, 2017. https://www.sciencedirect.com/journal/ain-shams-engineering-journal design of multiple-beam microstrip smart antenna for massive mimo applications 669 [20] b. samantaray, k. k. das and j. s. roy, "performance of smart antenna in cellular network using variable step-size algorithms", international journal of microwave and optical technology (ijmot), vol. 15, no. 2, pp. 179–186, march 2020. [21] i. l. bendjillali, m. s. bendelhoum, a. a. tadjeddine and m. kamline, "deep learning-powered beamforming for 5g massive mimo systems", journal of telecommunication and information technology, vol. 4, no. 4, pp. 38–45, oct 2023. [22] b. samantaray, k. k. das and j. s. roy, "comparison of the performance of artificial neural network with variable step-size adaptive algorithms for the beamforming of smart antenna for cellular networks", facta universitatis series: electronics and energetics journal, vol. 37, no. 2, pp. 277–287, 2024. [23] b. samantaray, k. k. das and j. s. roy, "designing smart antennas using machine learning algorithms", journal of telecommunication and information technology, vol. 2023, no. 4, pp. 46–52, oct 2023. [24] a. khan and j. s. roy, "design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system" facta universitatis series: electronics and energetics journal, vol. 37, no. 3, pp. 409– 422, 2024. [25] a. halder, a. senapati, and j. s. roy, "smart antenna of microstrip array for sector beamforming for 28ghz millimeterwave mobile communication”, international journal of microwave and optical technology (ijmot), vol. 13, no. 3, pp. 203–208, may 2018. [26] a. jumaah, and a. qaseem, "hybrid beamforming for massive mimo in 5g wireless networks", 4th alnoor international conference for science and technology, istanbul, turkey, 17–18 aug. 2022, pp. 1–11, 2022. [27] y. hu, k. kang, s. majhi, and h. quin, "downlink beamforming design for mobile users in massive mimo system", digital signal processing, elsevier, vol. 30, article id. 103716, oct. 2022. [28] a. b. moniem, and m. m. abdellatif, "massive mimo beamforming analysis for 5g systems", proceedings of 10th intl. conference on software and information engg., cairo, egypt, 12-14, nov. 2021, pp. 41–46, 2022. [29] w. mao, y. lu, j. liu, b. ai, z. zhong, and z. ding, “beamforming design in cell-free massive mimo integrated sensing and communication systems,” ieee globecom 2023, 4-8 dec. 2023, kuala lumpur, malaysia, pp. 546–551, ieee xplore, 2023. [30] m. abdelfatah, a. zekry, and s. elsayed, “orthogonal beamforming technique for massive mimo systems,” annals of telecommunications, springer link, pp. 1–19, feb. 2024. [31] r. garg, p. bhartia, i. j. bahl and a. ittipiboon, microstrip antenna design handbook, artech house, ma, usa, 2001. [32] i. j. bahl and p. bhartia, microstrip antennas, artech house, dedham, usa 1980. [33] s.haykin, adaptive filter theory, 4th ed, pearson education, 2002. [34] m. mishra and j. s. roy, “investigations on the effect of mutual coupling in smart antenna using adaptive signal processing algorithm”, ieee international conference on applied electromagnetics, signal processing and communication (aespc), oct. 22-24, 2018, ieee xplore, 1–5, 2018. instruction facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 611 623 doi: 10.2298/fuee1504611r analysis of half-band approximately linear phase iir filter realization structure in matlab  aleksandar d. radonjić 1 , jelena d. ćertić 2 1 crnogorski telekom a.d., montenegro 2 school of electrical engineering, university of belgrade, belgrade, serbia abstract. in this paper a detailed analysis of an atypical filter structure in matlab filter design and analysis (fda) tool is presented. as an example of atypical filter structure, the iir half-band filter with approximately linear phase realized as a parallel connection of two all-pass branches was examined. we compare two types of those filters obtained by two different design algorithms. fda tool was used for the experiment because different effects of the fixed point implementation can be simulated easily. one of the goals of this paper was to compare results obtained by two different design algorithms. in addition, different realizations of the filter structure based on the parallel connection of two all-pass branches were examined. key words: approximately linear phase iir filters, fda tool, half-band iir filters 1. introduction the digital filter design process consists of several steps. after the design itself, a very important step is the analysis of different aspects of filter implementation. if the filter is to be implemented in a fixed-point arithmetic, the quantization effects should be carefully examined [1]. this can be done by theoretical investigation, for example, by sensitivity analysis [2] and detailed round-off noise study. it is not always possible to calculate closed-form expressions for all transfer functions that are needed for the exact derivation of the sensitivity functions. for the digital filters, it is common practice to use numerical simulation of the quantization effects [3]. for that purpose, simulation model of specific target platform can be developed, or alternatively commercially available tools can be used. the first solution is time consuming and requires good knowledge of the fixed-point arithmetic and all the parameters of the target platform. for example, if the target platform is a dsp processor, it is not enough to take care of the word-length of the processor. usually, it is necessary to fully understand the structure of the integrated multiplier. in the second approach, when a commercially available tool is used, analysis received december 3, 2014; received in revised form june 15, 2015 corresponding author: jelena d. ćertić school of electrical engineering, university of belgrade, bulevar kralja aleksandra 73, 11020 belgrade, serbia (e-mail: certic@etf.bg.ac.rs)  an earlier version of this manuscript received the best section paper award (electric circuits and systems and signal processing section) at the 58th etran conference, vrnjačka banja, 2-5 june, 2014. [5]. 612 a. radonjić, j. ćertić time can be decreased. analysis tools contain sets of typical values for relevant parameters of the proposed design. drawback of this method is that commercially available analysis tools do not have the procedures for all possible cases. it means that in the case of a typical filter design, an analysis tool probably would be of no help. in this paper we analyze iir half-band approximately linear phase filter by means of the commercial analysis tool. we use matlab filter design and analysis (fda) tool [4] because it simulates quantization effects in a way that is suitable for the fixed-point implementation. we compare results obtained for filters designed by two different algorithms. filter is realized as a parallel connection of two all-pass branches [1, 2]. although parallel connection of two all-pass branches is a common choice for implementation of the low-pass/high-pass odd-order iir filters [1, 2], it is not fully supported in matlab filter design and analysis tool [4, 5]. we define a procedure that can be used for the analysis by matlab fda tool of a specific filter structure, iir half-band filter with approximately linear phase. this paper is organized as follows: in section 2 performances of matlab fda tool relevant for the fixed-point implementation are presented; in section 3 the iir half-band approximately linear phase filters are discussed; in section 4 possible realization structures are defined, in section 5 results of the analysis are presented, and section 6 concludes the paper. 2. matlab fda tool in recent years, the new versions of matlab are available twice a year [6]. typically, each new version has some new features regarding filter design and analysis. filter design and analysis (fda) tool is part of the signal processing toolbox [4]. by using the fda tool, different filter structures can be designed and analyzed in a rapid way, because the fda tool itself contains algorithms for the design of different filter types and the large set of analysis procedures. however, sometimes it seems that new features are not introduced in this tool fast enough. for the scope of our project, part of the fda tool related to the simulation of the quantization effects is important. it should be noted that the simulation of the quantization requires an additional (fixed point) toolbox. fig. 1 fda tool setting simulation parameters of the multiplier analysis of half-band approximately linear phase iir filter realization structure in matlab 613 for the supported filter types, fda simulation of the quantization is a powerful tool that allows the user to verify robustness of the filter structure to different effects of the quantization process. the user can define word-length parameter for the input signal and output signal and filter coefficients. in addition, the number of bits associated to the fractional part of the data (input signal, output signal and filter coefficients) can be set. multiplier/accumulator structure can be simulated by defining values for relevant parameters, fig. 1. the user can enter data through the gui or choose a set of predefined values. the predefined values usually correspond to “best possible” scenario that is not always possible to obtain in “real world” situations, but can be useful for the users inexperience in fixed-point applications. 3. half-band approximately linear phase iir filters an odd order iir filter (or filter pair) can be implemented as a parallel connection of two all-pass branches a0(z) and a1(z), fig. 2. the transfer functions of the low-pass filter, hlp(z), and of the high-pass filter hhp(z) are obtained as: 0 1( ) ( ) ( ) 2 lp a z a z h z   , (1a) 0 1( ) ( ) ( ) 2 hp a z a z h z   . (1b) usually, all-pass branches are implemented as the cascaded connections of the one first order section, and second order sections: 1 2( 1) / 2 2 1 0 1 22,4,... 1 2 ( ) 1 n l l l l l a a z z a z a z a z           , (2a) 1 21 ( 1) / 2 2 111 1 1 1 23,5,... 11 1 2 ( ) , 1 1 n l l l l l a a z za z a z a z a z a z              (2b) where n is the filter order, an odd number, and the constants ali, l=1, 2, 3, …, (n+1)/2, i = 1, 2 are first and second order sections coefficients [2]. it should be noted that for the overall filter hlp(z) of order n (an odd number), the order of the all-pass branch a0(z) is an even number n0 and the order of the all-pass branch a1(z) is an odd number n1. frequency response of the parallel connection of the low-pass filter is: 0 01 1 0 10 1 0 1 ( ) ( )( ) ( ) ( ) ( )( ) ( ) 2 2 2 2 2 2 ( ) ( ) 0 1 2 ( ) 2 2 ( ) ( ) cos . 2 j jj j j jj j j lp j e e e e e e h e e e e                                      (3) where φ0(ω) and φ1(ω) are phase responses of the functions a0(z) and a1(z). 614 a. radonjić, j. ćertić fig. 2 iir odd order filter realization as a parallel connection of two all-pass filters from (3) it can be concluded that the overall magnitude response depends on the difference of the phase responses of the all-pass functions. the overall phase response of the filter hlp(z) is a mean-value of the phase responses of the all-pass branches. comparing to the classical implementation structures of the iir filters that are based on the cascaded or parallel connections of the first and second order sections, realization based on the parallel connection of the two all-pass branches has reduced sensitivity in the pass-band [2, 7]. for that reason, it is usually a preferable choice for the implementation structure in the case of fixed-point implementation [2]. on the other hand, filter structure based on the parallel connection of the two all-pass branches suffers from the high stop-band sensitivity [2, 7]. in the case when high stop-band attenuation is required, quantization effects can degrade the filter frequency response [2]. in the special case of the half-band filter with approximately linear phase, the all-pass branch a1(z) is a pure delay z n1 , and the all-pass branch a0(z) is an all-pass function with approximately linear phase. in that special case, the filter order of the all-pass branch a0(z) is an even number n0 = n1 + 1. in addition, every second coefficient of the function a0(z) is zero-valued: 0 ( )a z  (4) half-band filter with approximately linear phase is a special case of the iir filter realization based on the parallel connection of the two all-pass branches. for that reason, the sensitivity of the filter is low in the pass-band and high in the stop band. design of the half-band iir filter with approximately linear phase is performed by design of the all-pass branch a0(z), approximately linear phase all-pass function. in this paper, we use filter transfer functions obtained by two different algorithms, one based on the optimization method [8] and the other based on the direct positioning in the z domain of the stop-band zeros of the low-pass filter transfer function [9, 10]. the first solution, originally presented in [8], design all-pass approximately linear phase transfer function a0(z) by optimization procedure. as an outcome, overall magnitude response of the half-band iir filter hlp(z) is equiripple. results obtained by design [8] for the filter of order n = 23 (n0 = 12, n1 = 11) are presented. the filter gain is shown in fig. 3 and the group delay of the filter in fig. 4. it should be noted that the passband group delay is approximately n1 samples. a0(z) a1(z) in outlp outhp 1/2   . 1 0 0 000 0 2 2 4 4 2 2 2 2 2 2 0 n n k k nnkn kn zazazaza zzazaa za        analysis of half-band approximately linear phase iir filter realization structure in matlab 615 fig. 3 gain response of the filter designed by optimization algorithm [8] fig. 4 group delay of the filter designed by optimization algorithm [8] the second approach, presented in [9] and [10], actually controls the positions of stop-band zeros of the overall half-band filter. in the case of the low-pass filter design, sometimes it is important to provide additional signal attenuation for certain frequencies on the stop-band. it can be achieved by the exact control of stop-band zeros positions. by placing a stop-band zeros exactly on the unit circle, large attenuation of the corresponding frequency range can be achieved. in the design approach presented in [9, 10] it is possible to control the stop-band frequencies for which an infinitely large attenuation is needed. it was shown in [9, 10] that the stop-band zeros of the low-pass half-band iir filter are roots of the polynomial function (5) where are: n is overall filter order, a2k are coefficients of the non-trivial all-pass branch (order of the non-trivial all-pass branch is n0 = (n + 1)/2), w=sin(ω) and u4k-2(w) is the chebyshev polynomial of the second kind. there are (n + 1)/4 low-pass half-band iir filter stop-band zeros lying on the unit circle. if the stop-band zeros are defined according to the filter specifications and all-pass filter coefficients are unknown, then (5) can be transformed into the system of linear equations (one equation for each zero). values of (n + 1)/4 all-pass branch coefficients are calculated by solving system of linear equations.   )()(...)()(1)( 21 2 12426422 wuawuawuawuawp nnkkl   616 a. radonjić, j. ćertić results obtained by the second approach of the design are presented for the same filter order and overall characteristics similar to characteristics obtained by the first approach case. the filter gain is shown in fig. 5 and the group delay of the filter in fig. 6. fig. 5 gain response of the filter designed by zero positioning algorithm [9, 10] fig. 6 group delay of the filter designed by zero positioning algorithm [9, 10] it should be noted that both filters share the same realization structure, fig. 1. therefore, for the filter analysis of both structures it is essential to analyze nontrivial allpass branch of the filter a0(z). 4. implementation of the half-band approximately linear phase iir filters the goal was to develop a procedure for the detailed analysis of the filter structure presented in fig. 1 in the case of the fixed-point realization. the objective was to compare half-band iir filters with approximately linear phase obtained by two different algorithms and to select for each of the two filter types, a filter realization that is most suitable for the case of fixed point implementation platform. three different implementations of the all-pass branch were analyzed, direct realization, cascaded connection of the second order sections and cascaded connection of the fourth sections. analysis of half-band approximately linear phase iir filter realization structure in matlab 617 since the filter hlp(z) is a half-band filter, poles of the transfer function a0(z) are symmetric about the imaginary axis. poles and zeros of a0(z) occur in conjugate reciprocal pairs. all-pass filter a0(z) is of order n0 = 4l + 2 or n0 = 4l + 4. in the 4l + 2 case, all-pass filter a0(z) has two poles on the imaginary axis and l quadruplets of poles, fig. 7a. in the 4l + 4 case, there is additional pair of poles placed on the real axis, fig 7b. all-pass branch a0(z) can be implemented as a direct structure of order n0, or as a cascaded connection of lower order sections. however, because hlp(z) is the half-band filter, symmetric poles and corresponding zeros can be grouped into the forth order sections. as a result, transfer function a0(z) can be implemented as a cascaded connection of one (for n0 = 4l + 2) or two (for n0 = 4l + 4) second order section(s) and l fourth order sections. fig. 7 poles (x) and zeros (o) of the all-pass transfer function a0(z), a) filter order is n0 = 4l + 2, b) filter order is n0 = 4l + 4 each quadruplet of poles with corresponding zeros form a single forth order all-pass section. since hlp(z) is a half-band filter, the forth order section is of the form: ( )ma z (6) the fourth order section am(z) can be realized with only two multiplications [1, 4]. if the filter is realized as a connection of the second order sections, structure of each section (apart from the sections that correspond to the real axis and imaginary axis poles) is: ( )ma z (7) it should be noted that , thus minimum number of multiplications is two [1, 4]. two imaginary axis pair of poles (and a pair of two real poles for n0 = 4l + 4) form a second order section(s):   .,...,1,0, 1 4 4 2 2 42 24 lm zaza zzaa za mm mm m         .2,...,1,0, 1 2 2 1 1 21 12 lm zaza zzaa za mm mm m       01 ma 618 a. radonjić, j. ćertić , ( )i ra z (8) both sections can be implemented with a single multiplication. each section (second or fourth or n0-th order) can be realized as a direct form (direct form i), direct canonical form (direct form ii), transposed direct form (transposed direct form i) or transposed direct canonic form (transposed direct form ii). alternatively, scheme with reduced number of multiplications [1, 4], fig. 8 can be used. for the all-pass filter of order n0, the minimum number of multipliers is n0. since the filter hlp(z) is a half-band filter, every second coefficient of the all-pass branch is zero. therefore, the number of multipliers is reduced to n0/2. forth order section (6) can be realized with only two multipliers am4 = a4 and am2 = a2. second order section given by (8) can be implemented with only one multiplier ai,r2 = a1. z-1 z-1z-1z-1 z-1 z-1 z-1z-1 x[n] a2 a1 y[n] 0na 10 na fig. 8 all-pass filter structure with minimum number of multiplications (n0=4) 5. analysis of the half-band approximately linear phase iir filters the structure presented in fig. 1 (parallel connection of two all-pass branches) should be considered as a “classic” structure (along with cascaded and parallel realizations) but matlab fda tool does not have direct support for this type of the design. it means that a fda tool can’t be used for the design of the filter. instead, the filter should be designed in matlab and imported into the fda tool. it can be done if the filter is constructed as an object, because matlab fda tool can import the filter object from the currently active workspace. for that reason, the filters were designed in the conventional way and obtained the coefficients of the denominator of the non-trivial allpass branch a0(z). for both algorithms, three filter objects were constructed, one for the direct implementation, one for the cascaded connection of the second order sections and last for the realization with second and forth order sections. unfortunately, it is not possible to perform quantization analysis by using the fda tool for the cascaded or   . 1 2 2 2 2, ,      za za za i,r ri ri analysis of half-band approximately linear phase iir filter realization structure in matlab 619 parallel structures that were not designed in fda tool. this means that the user has to set filter object properties in matlab. example filter is a parallel connection of an allpass branch of order n0 = 12 and a pure delay of n1 = 11 samples. the filter a0(z) can be implemented as a direct structure, cascaded connection of 12 second order sections or as a cascaded connection of two second order sections and 5 fourth order sections. the filter a0(z) was defined as the all-pass filter, assuming realization based on fig. 8 with minimum number of multipliers [1, 4]. there is another benefit of the all-pass filter implementation with reduced number of multiplications. when the all-pass filter is implemented as in fig. 8, the last coefficient of the numerator polynomial remains exactly one. for all other implementation variants, this coefficient usually is rounded to the nearest value allowed by the chosen quantization parameters. for example, if the coefficients are coded as two’s complement numbers with 15 fractional bits, 1 will be rounded to the value 1-2 -15 = 0.999969482421875. however, for all-pass filter type, arithmetic property of the filter object can’t be set to “fixed”. for the analysis of the quantization effects, it is not essential to implement filter with as few multipliers as possible. therefore, we changed our design to direct form i. we defined filter object properties related to the fixed-point arithmetic, fig. 9. at the end, we made a parallel connection of a0(z) and a pure delay, and add scaling factor 0.5. h=dfilt.df1(fliplr(a),a); h.arithmetic='fixed'; set(h,'outputwordlength',16,'outputfraclength',15); set(h,'coeffwordlength',16,'coeffautoscale',0); set(h,'numfraclength',15,'denfraclength',15); set(h,'productmode','specifyprecision'); set(h,'numprodfraclength',30); set(h,'denprodfraclength',30,'castbeforesum',cbs); h2=dfilt.delay(11); huk=cascade(dfilt.scalar(0.5),parallel(h,h2)); fig. 9 creating filter object, all-pass branch is realized as a direct structure, a is vector of denominator coefficients of the transfer function a0(z) hi=dfilt.df1(fliplr(ci),ci); ... h2ord=dfilt.cascade(hi); hr=dfilt.df1(fliplr(cr),cr); ... addstage(h2ord,hr); h2ord2=copy(h2ord); for br=1:length(nule_rest)/2 hc2=dfilt.df1(fliplr(cc2(br,:)),cc2(br,:)); ... addstage(h2ord2,hc2); end; fig. 10 creating filter object, all-pass branch is realized as a cascaded connection of second order sections; structure, ci, cr, and cc2 are denominator coefficients corresponding to imaginary axis poles, real axis poles and “rest” poles respectively for the cascaded implementations, the arithmetic properties of the all sections should be set independently. it means that filter object was defined for each section. all-pass 620 a. radonjić, j. ćertić branch a0(z) was defined as a new object defined as a cascaded connection of the objects corresponded to all low order sections. in fig. 10 code for obtaining a connection of the second order sections is presented. fixed-point arithmetic properties are set in the same way as for the direct realization of a0(z). 5. analysis results analysis is performed in the fda tool for approximately linear phase half-band iir filters obtained by optimization algorithm [8], and for filters obtained by the low-pass filter stop-band zero positioning method. design parameters for the optimization algorithm [8] are: the filter order, n0 = 23, the pass-band edge frequency, g = 0.45π. design parameters for the stop-band zero positioning method are: the filter order, n0=23, the first stop-band zero frequency, 0 = 0.61π. both designs share the same realization structure, fig. 1. therefore, for the same filter order, number of the multipliers and number of the states are the same for both structures. in table 1 results for the number of the multiplications (m) and the number of the states (s) are presented, for the filter order n = 23 (n0=12, n1=11), assuming direct form i for all sections. it should be noted that direct form i is not optimal. it requires twice as many multiplications as the all-pass structure. in addition, the number of the states is reduced in the case of canonic structures (direct form ii and transposed direct form ii). table 1 implementation costs, m – number of multipliers, s – number of states, direct form i structure m s sos1 second order section, real (or imaginary) axis poles 2 4 sos2 second order section (other poles) 4 4 fos fourth order section 4 8 d delay (11 taps) 0 11 0.5 constant 1 0 direct implementation of a0(z) 12 24 hlp(z) – direct impl. of a0(z) 13 35 hlp(z) – 2 sos1, 4 sos2 21 35 hlp(z) – 2 sos1, 2 fos 13 35 it was shown in [5] that, for the implementation consist of the second order sections only, degradation of the frequency response is larger comparing to other two alternatives. in fig. 11 gains of implementation based on the second order section are presented for quantized and non-quantized filter coefficients for both algorithms. the quantization parameters are set to: coefficient world-length – 16 bits, number of fractional bits – 15. assuming two’s complement signed numbers, values that can be representing correctly are in [-1 1) range. in fig. 11 it can be seen that the filter obtained by the optimization method [8] h12(z) has equiripple response. for the given filter order, stop-band attenuation is less than 40 db. therefore, the quantization error is small (for the specified world-length). characteristic of the filter obtained by zero positioning procedure [9, 10] analysis of half-band approximately linear phase iir filter realization structure in matlab 621 h22(z) has increased stop-band attenuation. for the attenuation values larger than 80 db degradation of the response is noticeable. in fig. 12 gains of the low-pass filter hlp(z) for three different implementation of the all-pass branch a0(z) in the case of the design [9, 10] are presented. for all three simulated structures, the degradation for the attenuations larger than 80 db is similar. for the defined word-length of 16 bits, this effect is expected. fig. 11 the gains of the analyzed filters, h12(z) – design method based on the optimization [8], h22(z) – design method based on the low-pass stop-band zeros positioning [9, 10] fig. 12 the gains of the analyzed filters based on the low-pass stop-band zeros positioning [9, 10], for three different implementation of the all-pass branch a0(z), h2(z) – direct implementation, h22(z) – cascaded connection of the second order sections, h24(z) – cascaded connection of the second and fourth order sections the analyzed structures are approximately linear phase iir half-band filters. in fig. 13 group delays are presented for low-pass filters obtained by the optimization 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -100 -80 -60 -40 -20 0 / g a in [ d b ] h 12 (z) quantized h 12 (z) reference h 22 (z) quantized h 22 (z) reference 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -100 -80 -60 -40 -20 0 / g ai n [ d b ] zero positioning reference h 2 (z) h 22 (z) h 24 (z) 622 a. radonjić, j. ćertić method [8], h1(z) and by the low-pass filter stop-band zero positioning method [9, 10], h2(z). in both cases, group delay is approximately 11 samples. in fig. 14 group delays are presented for the filter obtained by the optimization method [8] for the all-pass branch h1ap(z) and for the low-pass filter h1(z). it should be noted that the delay of the low-pass filter has smaller variations comparing to the variations of the delay of the all-pass branch. fig. 13 the group delay of the analyzed filters, h12(z) – design method based on the optimization [8], h22(z) – design method based on the low-pass stop-band zeros positioning [9, 10] fig. 14 the group delay of the all-pass branch h1ap(z) and of the low-pass filter h1(z) designed by the optimization method [8] 6. conclusion in this paper, a possible solution for analysis of the quantization effects and implementation cost using a well known commercially available fda tool was presented. it was shown that it is possible to use an fda tool even in the cases where the filter 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10.5 11 11.5 / g ro u p d el ay [ s am p le s] h 1 (z) h 2 (z) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10.5 11 11.5 / g ro u p d el ay [ s am p le s] h 1 (z) h 1ap (z) analysis of half-band approximately linear phase iir filter realization structure in matlab 623 structure that was analyzed is not directly supported. our approach was confirmed by simulation of quantization effects in the case of half-band iir filter with approximately linear phase. two different algorithms were used for the design of the filter, one, wellknown [8], based on the optimization method, and the other, recently published [9, 10], based on the direct positioning of the low-pass filter stop-band zeros. implementation structures are the same for both filters, and consist of a parallel connection of the approximately linear phase all-pass branch and a pure delay. for the situation presented in this paper, when the structure is not fully supported in the fda tool, the user should be able to set additional parameters manually (by writing the appropriate code). it requires advanced knowledge about different implementation structures, the principles of the simulation of the quantization effect and number representations in the fixed-point arithmetic systems. it can be concluded that it is possible to use the fda tool for the analysis of the filters that are not supported, but the process is not as simple as in the case of the supported filters. acknowledgement: this work was partially supported by the ministry of education and science of serbia under grant tr-32023. references [1] m. d. lutovac, d.v. tošić, b. l. evans, filter design for signal processing using matlab and mathematica, prentice-hall, new york, 2001. [2] j. d. ćertić and l. d. milić, "investigation of computationally efficient complementary iir filter pairs with tunable crossover frequency", int. j. of electron. and commun. (aeü), vol. 65, pp. 419-428, 2011. [3] j. d. ćertić and l. d. milić, "on the sensitivity of two-channel iir filter banks with variable crossover frequency", in proceedings of the 5th international symposium on image and signal processing and analysis, ispa. istanbul, turkey, 2007. pp. 86-91. [4] mathworks, fdatool documentation [online], the mathworks, united states, available: http://www.mathworks.com/help/dsp/ref/fdatool.html [accessed 10 may 2015]. [5] a. d. radonjić and j. d. ćertić, " analysis of atypical filter structures in matlab“, in proceedings of the icetran, vrnjačka banja, srbija, 2014, eki1.1. [6] mathworks, matlab documentation [online], the mathworks, united states, available: http://www.mathworks.com/help/matlab/index [accessed 10 may 2015]. [7] l. d. milić and m. d. lutovac, "design of multiplierless elliptic iir filters with a small quantization error” ", ieee trans on sig. proc., vol. 47, pp. 469 – 479, february 1999. [8] h. w. schüssler and p. steffen, "recursive half-band filters", int. j. of electron. and commun. (aeü), vol. 55, pp. 377-388, june 2001. [9] m. d. lutovac and a. radonjić, "digital halfband iir filters with approximately linear phase" (in serbian), in proceedings of informacione tehnologije. žabljak, montenegro, 2010, pp. 174-177, 2010. [10] a. d. radonjić, "analysis and design of digital filter using algebra software systems", (in serbian), master degree thesis, school of electrical engineering, university of belgrade, 2014. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. 121-136 https://doi.org/10.2298/fuee2201121s © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper optimal battery storage location and control in distribution network miloš stevanović1, aleksandar janjić2, sreten stojanović1, dragan tasić2 1university of niš, faculty of technology, leskovac, serbia 2university of niš, faculty of electronic engineering, niš, serbia abstract. the paper discusses the problem of the energy losses reduction in electrical networks using a battery energy storage system. one of the main research interests is to define the optimal battery location and control, for the given battery characteristics (battery size, maximum charge / discharge power, discharge depth, etc.), network configuration, network load, and daily load diagram. battery management involves determining the state of the battery over one period (whether charging or discharging) and with what power it operates. optimization techniques were used, which were applied to the model described in the paper. the model consists of a fitness function and a constraint. the fitness function is the dependence of the power losses in the network on the current battery power, and it is suggested that the function be fit by a n order power function. the constraints apply to the very characteristics of the battery for storing electricity. at any time interval, the maximum power that the battery can receive or inject must be met. at any time, the stored energy in the battery must not exceed certain limits. the power of losses in the network is represented as the power of injection into the nodes of the network. the optimization problem was successfully solved by applying a genetic algorithm (ga), when determining optimal battery management. finally, the optimal battery management algorithm is implemented on the test network. the results of the simulations are presented and discussed. key words: energy losses, optimal location, battery storage, charge state (soc) 1. introduction energy security, as well as environmental concerns are becoming an increasingly current and frequent topic of the 21st century. currently, a large part of the world's energy comes from fossil sources, and humanity is slowly facing the problems of environmental pollution. therefore, the importance of alternative clean energy sources, which have a tolerable impact on the environment, is of great importance. in order to improve the quality received july 13, 2021; received in revised form october 26, 2021 corresponding author: aleksandar janjić faculty of electronic engineering, niš, aleksandra medvedeva 14, 18000 niš, serbia e-mail: aleksandar.janjic@elfak.ni.ac.rs 122 m. stevanović, a. janjić, s. stojanović, d. tasić of the power system (increase the reliability, decrease the energy losses, improve the voltage profile of the network) and create better distribution flexibility, renewable energy resources (res) are necessary for the power system. photovoltaic devices, electric vehicles, storage systems batteries are some examples of distributed energy resources. micro grid is a distribution system that includes various renewable energy sources in the power system. it can operate in two different operating modes: in island operation (autonomous) and be connected to the power system. the presence of several interconnected micro networks in distribution networks improves the performance and reliability of the power system. the micro network operator can reduce the operating costs of the system, while increasing its reliability and environmental performance [1]. much of the literature deals with the aforementioned [2 – 5]. to make the operation of the electricity network even more flexible and reliable, it is necessary to introduce battery storage systems (bees). electricity losses are one of the main issues for distribution system operators, as the planning, management, and maintenance of the distribution network are based on appropriate costs. therefore, the cost of supply to end users connected to the distribution system is also affected by the cost of electricity losses. therefore, the reduction of electricity losses is one of the main goals of electricity distributors, which should ensure efficient and reliable distribution of electricity at an affordable price [3]. distributed production from renewable energy sources has been growing in recent years, introducing the need for a possible reconfiguration of the current distribution network (dn) which can reduce the load of individual lines and provide less energy losses with corresponding increased reliability and efficiency [6]. minimizing power losses in the distribution network is one of the main issues of the distribution system, due to the need for reducing control distribution network management costs. recent developments in battery storage technologies have introduced new capabilities for their power distribution systems within the radial distribution network. batteries can be properly integrated into the grid and managed to reduce electricity losses, thereby increasing production from renewable energy sources and contributing to voltage regulation due to the production of reactive power from the battery inverter. reducing electricity losses using bees in the distribution network has become increasingly attractive in recent years due to a significant increase in technological performance and an expected reduction in bess installation costs [7]. energy storage devices in power systems can generally be classified into two types: long-term devices with relatively long response time and short-term storage devices with fast response. each bees type can provide a certain set of applications, depending on the range of its technical parameters. the first category is suitable for energy management applications such as peak shaving, loss reduction, island operation, renewable energy, time shift, and long-term voltage control. one of the most important applications in this category is the cutting of the peaks on the load diagram, which the researcher study in detail in [8]. this is especially true for some rapidly evolving technologies, for example, lithium-ion batteries with an expected reduction in capital costs by about 30-50% in the coming years [9, 10]. for these reasons, much of the research is currently focused on different modeling possibilities and simulations of optimal management of besss connected to the distribution network. the genetic algorithm has proven to be the most favorable in practice for solving this type of problem [11, 12, 13]. however, these methodologies require intensive computational time. the main goal of this paper is to define a novel optimization model, reducing the computational time, and simultaneously optimize the location and the scheduling of the battery. optimal battery storage location in distribution network and optimal battery control 123 in this paper, the problem of reducing electricity losses using a battery is considered. this paper aims to determine the optimal location of batteries and their management to reduce losses in the distribution network. first, the location of the battery is determined based on the sensitivity coefficient of the network nodes, and then the optimization of battery charging / discharging is performed for the selected location. optimal battery management involves determining the charge / discharge power of the battery so that daily power losses in the network are minimal. for this purpose, a fitness function has been defined, which includes network and battery models, in the form of the dependence of network power losses on the current battery power. to obtain a simpler solution, it has been proposed that this dependence be fitted with a power function of order n. to the knowledge of the authors, this way of defining the fitness function has not been researched in the literature so far. the optimization problem, in addition to the fitness function, also contains additional limitations such as inequalities and equations that result from the characteristics of the battery for storing electricity (battery size, maximum charging / discharging power, discharge depth, etc.). the optimization problem was successfully solved by applying a genetic algorithm (ga). at the end of the work, the defined optimal battery management algorithm was applied to one test network. the simulation results showed that the proposed method can be efficiently used to reduce electricity losses using a battery. the paper is organized as follows: the description of the problem, modelling of steady-state operation of dn and bess are presented in section 2, section 3 describes the methodology of optimal bess location and the equations modelling the optimization goal and constraints finally, in section 4 radial test grids are presented to validate the proposed methodology for finding the bess siting and determine optimal power of charge/discharge battery for the selected location. 2. problem description and formulation this paper uses the model of network and model of battery storage, which will be described below. the functional dependency of the power losses in the network on the current battery power was defined. based on it, the fitness function was formed for the optimization procedure. 2.1. network and battery modelling 2.1.1. network modelling the number of nodes and branches leads to an appropriate representation of the network where the incidence matrix a and matrix p are defined according to those given in references [14]. sk is the complex load force of the k-th node. the generated power in a node is taken as negative (-) and the consumption power as positive (+). the incidence matrix a is of dimension n x n (number of nodes x number of branches), not counting the root node. matrix a is a square matrix, due to the radial topology of the distribution network. the first and second nodes in the branch are identified by -1 and +1, respectively. matrix p, dimensions n x n (number of nodes x number of branches) defines whether the k-th branch is located in the path between the j124 m. stevanović, a. janjić, s. stojanović, d. tasić th and the root node. based on the previous one, the matrix equality holds that ta p i= . the preceding notation is identical to that presented in reference [14]. branch currents and node voltages are calculated iteratively according to the procedure proposed in reference [14]. the loads connected to the distribution network are characterized by constant currents at each iteration. under this assumption, the load current of the k th node is independent of the voltage in that node. so the current of the k-th node. in the j th iteration it is calculated as: * ( ) ( 1) 3 sj ki nk j u k = − (1) where ( 1)j ku − is the line voltage value calculated in the previous iteration (j−1) – th, ( )j i nk is injection current in k-th node. during the iterative process, the node voltages are used for the calculation and in the first iteration they should be equal to the root node voltage e0. the corresponding equation according to kirchhoff's law for each node, can be written for each iteration using the incidence matrix as follows:    ( ) ( ) [ ] j j a i i nb = (2) where are ( )j i b branch currents in the j-th iteration, and ( )j i n injection currents in nodes network in the j-th iteration. when branch currents are calculated using the preceding formula, the voltage drop duk at each node in the network can be written as: ( ) ( )j j u z ikk bk  = (3) where is zk the impedance of the k-th branch and ( )j i bk is current in k–th branch in the jth iteration . therefore, in the j-th iteration, for bus voltage at each node of the network we have    ( ) ( ) [ ]0 j j u e p du k k = − (4) where e0 is the known root node voltage and du is voltage drop vector in each of the nodes of the network. finally, the iterative process is terminated when the following condition is satisfied:       ( ) ( 1) ( 1) j j u u k k j u k  − −  − (5) in other words, the iterative process ends when the relative change in voltage across all nodes in the network in two adjacent iterations is less than the given tolerance ε. optimal battery storage location in distribution network and optimal battery control 125 2.1.2. battery model the battery model is based on the battery model from reference [15] where the battery is treated as a passive component. therefore, the power injected into the battery (battery charge) has a positive sign while the power injected by the battery into the network (battery discharge) has a negative sign. the energy accumulated in the battery (charge state) of the soc at ti+1 is defined by the following linear equation [15]: , ( ) (( ) ( δ1 )) , p tist d soc t soc t p t tc st ci ii sd d       = + −+     (6) where sd is the battery discharge efficiency, c is the charging efficiency, d is the discharge efficiency, and ,st cp and ,st dp are the battery powers during charging and discharging, respectively. to limit the charging and discharging power of the battery, the previous variables should satisfy the following inequalities: 0 , 0 , 0 1 socmaxp cst c tc socmaxpst d d td c d          +  (7) where maxsoc is the capacity of the battery, ct and dt are the minimum charging and discharging times, respectively, c and d are binary variables that determine whether the battery is charged or discharged. for 1c = and 0d = the battery is charging, for 0c = and 1d = , the battery is discharging, while for 0c = and 0d = , the battery is offline. 2.2. problem formulation it is necessary to determine the optimal location and schedule of charging and discharging the battery throughout the day so that the daily energy losses in the network are kept to a minimum. battery siting is determined based on sensitivity analysis of the power losses given in reference [16]. * * , , 100 10 * 0 wloss w wlos w wloss k los s lo s k l s oss s  − = =  (8) where ,wloss k is corresponding to the daily power losses for the given grid configuration and *wloss are daily power losses for the referent configuration network. energy losses during the day can be calculated as the sum of energy losses in individual time intervals. this time interval is chosen so that the power of losses in the 126 m. stevanović, a. janjić, s. stojanović, d. tasić network could be constant during its duration. therefore, the total energy losses during one day are calculated as: 1 2 ( 1) n w w w w w wi in i = + + + + + =  = (9) where n is the number of time intervals and iw is energy losses in the i th time interval. energy losses depend on the power losses in the network and the duration of these losses, while power losses depend on the square of the current flowing through the network elements (line, transformer, generator, etc.). it is a well-known fact that power losses depend on the current squared. however, the power flow through the lines of the network largely contributes to the injection of power into the nodes of that network. hence the idea, that the power of losses in the network is represented by some function that depends on the power of injection in individual nodes of the network. there can be one node with batteries, and there can be more nodes. depending on whether one or more nodes are concerned, an appropriate polynomial function is chosen that gives the relationship between the dependence of energy losses and the injection power in the battery nodes. if it is a single node within a battery, the form of the function is as follows: ( ) ( , ) ( , ) 1 n n j i n j i bat i j w a p − − = =  (10) where ( , )bat ip is battery of power in i-th time interval, and n is order of polynomials. total energy losses during one day are equal to the sum of losses in individual time intervals, based on equality (9) and (10): ( ) ( , ) ( , ) ( 1) 1 n n n j n j i bat i i j w a p − − = = =  (11) in the case of two nodes with batteries, the form of the polynomial function is as follows: ( , ) ( 1, ) ( 2, ) 1 n n i i i i j bat j bat j j w a p p− = =  (12) based on equality (10) and (12), the total energy losses are calculated: ( , ) ( 1, ) ( 2, ) 1 1 n n n i i i j bat j bat j i j w a p p− = = =  (13) 3.2.1. one battery connected to the network in the next example, only one battery is connected to the network. the day is divided into n equal time intervals. the charging and discharging intervals are equal to c dt tt= = . for each time interval the dependence of the power loss on the network as a function of the current battery power for a particular node is determined for the range of battery power max max, ][ p p− . the idea is to create a dependency of the power losses in the network on the current battery power. an example of the dependence for the interval n = 24 is given in figure 1. in this example, max 1p mw= . optimal battery storage location in distribution network and optimal battery control 127 fig. 1 dependency of energy losses as a function of battery power the next step is fit to each of these dependencies analytically with a degree function of the n-th order using equations (9) and (10). energy losses for each time interval are represented as the power of injection into the nodes of the network. the fitness function is the daily energy loss as a function of battery power. in this example, a quadratic function is chosen for the fitness function because the coefficients a3i, a4i, etc. are extremely small, practically negligible values. it is necessary to determine the vector batp with appropriate constraints so that energy losses are kept to a minimum. the fitness function is given as follows: 2 ( , ) ( , ) ( 1) ( ) n i bat i i bat i i i w a cpp b = = + + (14) where: , ,i i ia b c are coefficients from fitting function and ( , )bat ip is battery power in i-th hours. the coefficients are selected based on the dependence of network losses on the battery injection power for each node 3.2.2. two batteries connected to the network a similar analysis is done for two batteries connected to the network in nodes 11th and 10th. the day is divided into n equal time intervals. the charging and discharging intervals are equal to tc = td = t. the dependence of the network energy loss as a function of the battery power for two selected nodes is determined for each time interval. based on a loss sensitivity analysis, for the range of battery power [−pmax, pmax] a functional relation between the energy losses and the battery power is created. an example of the dependence for the interval n = 24 is given in figure 2. in this example, pmax = 1mw. in the case of two connected batteries, equations (12) (14) are used and the total energy losses during the day are determined. as the individual coefficients of higher degrees of polynomial are small, they can be neglected and thus reduce the order of the polynomials. based on equality (13) it is obtained: 128 m. stevanović, a. janjić, s. stojanović, d. tasić 2 (00, ) (10, ) (11, ) (01, ) (10, ) (20, ) (11, ) (11, ) (11, ) (10, ) 2 2 2 3 ( 1) (02, ) (10, ) (21, ) (11, ) (10, ) (12, ) (11, ) (10, ) (03, ) (10, ) n i i i i i i i i i i i i i i i i i i i i i a a p a p a p a p p w a p a p p a p p a p=  + + + +  =  + + + + +   (15) (00, )ia , (00, )ia , (00, )ia are the coefficients with the corresponding variables in i th intervals. fig. 2 dependency of energy losses as a function of batteries power in nodes 11th and 10th 2.2.2. constraints the constraints are maximum charging/discharging power and minimum and maximum battery energy. charging/discharging power is constrained by the minimum and maximum active power (16): ,min , ,maxbat bat i batp p p−   (16) where ,minbatp is the minimum, and ,maxbatp the maximum battery power. a similar constraints can be applied to the energy of the battery that is limited by its minimum and maximum value. therefore, 1 min 0, max 1 , n bat i i j j i soc s spo tc oc − = +  +  (17) where soc0,(n−1) is battery energy at the end of the interval tj, socmin is minimum battery energy and socmax is maximum battery energy. to complete the model of this problem, another condition is introduced as a constraint the battery at the end of the time cycle (the time cycle is one day), returns to the original state in which it was at the beginning of the time cycle. this limitation is justified by the fact that the battery is globally a passive energy element. although at some point it can provide energy in the grid and eventually consume energy, in the overall energy balance it neither produces nor consumes the energy. based on the above, the following can be written: ( , ) ( 1) 0 n bat i i i p t = = (18) optimal battery storage location in distribution network and optimal battery control 129 the last equality emphasizes that the battery returns to its initial state at the end of the day. constraints (18) can be represented in a matrix form, using equations (19) and (20): ( ) ( ) ,1 ,2 ,3 0 , 1 1 0 0 0 0 0 1 1 1 0 0 0 0 1 1 1 1 0 0 0 1 1 1 1 1 0 0 1 1 1 1 1 0 1 1 1 1 1 1 1 bat bat bat max bat n p p p t soc soc p −                           −                               (19) ( ) ( ) ,1 ,2 ,3 0 , 1 1 0 0 0 0 0 1 1 1 0 0 0 0 1 1 1 1 0 0 0 1 1 1 1 1 0 0 1 1 1 1 1 0 1 1 1 1 1 1 1 bat bat bat min bat n p p p t soc soc p −  − −         − − −         − − − −       −         − − − −       − − − − −        − − − − − − −      (20) in developed form, constraint (17) looks similar to the constraint (19) ,1 ,2 ,3 ,24 0bat bat bat batp t p t p t p t+ + + + = (21) the fitness function is the daily energy loss as a function of battery power, equation (11). it is necessary to determine the vector batp , which contains unknown powers in each time interval, with appropriate constraints so that energy losses are kept to a minimum. the degree of the previous function is determined by coefficient values. coefficients from a previous function that are less than a certain pre-set value are ignored, thus reducing the order of the degree of the function. the optimization problem can be formulated in (22): fitness function: ,min ( )bat iw p constraints: (1) – (7), (16), (19), (20) (22) the optimization process is carried out in two steps. in the first step, the location of the battery is selected according to the maximal sensitivity coefficient (8). then, using (22), the optimal values of battery powers pbat, i are determined. the genetic algorithm is used for optimization. 130 m. stevanović, a. janjić, s. stojanović, d. tasić 3. results 3.1. distribution network data figure 3 shows the test network supplied from the 110 kv network and the substation 110/20 kv. it is a radial distribution system, because breakers s1, s2 and s3 are open. the nominal voltage of the network is 20 kv. the transformer is modeled as a serial impedance. the data for all branches of the grid are given in table 1, while the data of all network loads are given in table 2 [15]. fig. 3 cigre european mv distribution network benchmark optimal battery storage location in distribution network and optimal battery control 131 table 1 network lines data from node in node length [km] r [ω] x [ω] installation 1 2 2.82 0.7529 0.5732 underground 2 3 4.42 1.1801 0.8984 underground 3 4 0.61 0.1629 0.1240 underground 4 5 0.56 0.1495 0.1138 underground 5 6 1.54 0.4112 0.3130 underground 6 7 0.24 0.0641 0.0488 underground 7 8 1.67 0.4459 0.3395 underground 8 9 0.32 0.0854 0.0650 underground 9 10 0.77 0.2056 0.1565 underground 10 11 0.33 0.0881 0.0671 underground 11 4 0.49 0.1308 0.0996 underground 3 8 1.30 0.3471 0.2642 underground 12 13 4.89 2.2240 1.7914 overhead 13 14 2.99 1.3599 1.0953 overhead 14 8 2.00 0.9096 0.7327 overhead table 2 network load data busbar real power [kw] reactive power [kvar] power factor (ind.) 1 2 3 200 120 0.86 4 400 250 0.85 5 1500 930 0.85 6 3000 2260 0.80 7 800 500 0.85 8 200 120 0.86 9 1000 620 0.85 10 500 310 0.85 11 1000 620 0.85 12 300 190 0.84 13 200 120 0.86 14 800 500 0.85 15 500 310 0.85 16 1000 620 0.85 17 200 120 0.86 the loads connected to this network are a mix of residential and industrial consumption. since the optimization process is performed over a period of one day, daily active power diagrams for residential and industrial consumption are used [6] and shown in figure 4. daily diagrams of reactive power for residential and industrial consumption of end users [6] are shown in figure 5. active and reactive power are given in relative units. 132 m. stevanović, a. janjić, s. stojanović, d. tasić fig. 4 daily active power load diagrams for residential and industrial consumption fig. 5 daily reactive power load diagrams for residential and industrial consumption the previous method will be applied in the next two examples. in the first example, one battery in one node is used. that node is selected based on the loss sensitivity analysis given in section 2.2 of this paper. the parameter is calculated for the test grid by alternatively adding at each busbars loads with flat profiles, but different rated powers and power factors [17]. sensitivity coefficients are given in table 3. table 3 calculated busbar sensitivity to power losses busbar 11 10 7 9 8 6 5 4 3 2 14 13 1 12 loss,k [%]] 25.7 25.6 25.5 24.9 24.4 23.9 23.1 22.6 21.9 8.8 8 5.7 0.7 0.6 hours [h] hours [h] optimal battery storage location in distribution network and optimal battery control 133 the battery considered in this study is based on lithium-ion technology, which is one of the most promising technologies, with high energy density, high efficiency, and a relatively high number of charge / discharge cycles, and even at higher depths of discharge (dod). in our example, the following battery parameters were used: sd = 1, c = 1, d = 1, soc = 90%. finally, there are no distributed generators in the test network in this study, so the peak load is mostly covered by batteries. in the second example, there were two batteries used, connected to the 11th and 10th nodes of the network. the nodes were also selected based on sensitivity analyses. 3.2. results of simulation 3.2.1. results of simulation for one battery connected to the network on the basis of equation (22) for the case with the battery connected in one node the hourly battery powers for the optimum location are calculated. optimum location is determined in the node 11 based on the loss sensitivity analyses. charging and discharging battery power for every hour for optimum location is given in figure 6. positive sign of the battery power means that the battery is charging, negative sign means the discharge of the battery and if battery power is zero, the battery is offline. the optimization problem is solved with the genetic algorithm in matlab. the maximal generation number for the ga algorithm is 100, with the population size set to the array length of 24. optimization is performed on intel(r)xeon(r) cpu e5-26670 @ 2,90 ghz processor with 32 gb ram. the total time of optimization is 23s. as stated before, the first step in the optimization process is the optimal location determination using the sensitivity coefficient. the optimization procedure is thus greatly facilitated. to check the validity of this approach and compare the difference in energy losses on a daily basis for all possible battery locations, an analysis was performed for each node in the network. fig. 6 charging and discharging battery power per hour figure 7 shows the energy losses for each node. minimal daily energy losses are obtained for the battery placed in node 10, and highest in node 12. the difference between daily energy losses in nodes 10 and 12 is 0,15 mw. figure 6 shows the schedule of 134 m. stevanović, a. janjić, s. stojanović, d. tasić charging and discharging battery placed in node 10. during the night, the load of the network is low, and then the battery receives the power from the grid. during peak load periods, the battery injects the energy into the network, and then less energy is received from the grid. for such charge and discharge schedule at node 10, the daily energy losses are the lowest. fig. 7 energy losses for different battery locations in figure 8, the charging and discharging battery schedule for battery placed in each node is shown. fig. 8 daily load diagrams reactive power for residential and industrial consumption the approximate solution obtained with the sensitivity coefficient (node 11) doesn’t differ from the accurate solution (node 10) because of the small difference among sensitivity coefficients (αloss, 11 = 25,7; αloss, 10 = 25,6). 3.2.2. results of simulation for two batteries connected to the network based on the equation (15) for the case of batteries connected in two nodes and optimization formulation (22) the battery powers per hour for optimum locations are obtained. optimum locations (nodes 11th and 10th ) are determined by the loss sensitivity analysis. the resulting charging and discharging battery power for every hour for both batteries is given in figure 9. optimal battery storage location in distribution network and optimal battery control 135 fig. 9 batteries load for location nodes 11th and 10th 2. conclusion in this paper, the optimal battery management and selection of the optimum battery location for the battery energy storage system in the radial distribution network are analyzed. the computational time for the optimization is greatly reduced for two reasons. firstly, the optimum location is found using the sensitivity coefficient. it is shown that this approximation doesn’t differ from the accurate solution. secondly, the energy losses in the network are represented as the function of the power of injection into the nodes of the network the fitness function represents the dependence of the energy losses in the network on the current battery power, and it is suggested that the function should be fit by an n order degree function. the constraints correspond to the characteristics of the battery (battery size, maximum charge / discharge power, discharge depth, etc.). at each time interval, whether the battery is being charged, discharged or offline, the maximum power that the battery can receive or inject must be satisfied and at any time the stored energy in the battery does not exceed certain limits. finally, the optimal battery management algorithm is implemented on the test network. two separate cases were considered: with one and two batteries in the network. the results of the simulations are presented and discussed. in this way, the optimal locations of batteries are determined, as well as their way of charging and discharging in certain time intervals that the total energy losses in certain period are minimized. the economic analysis of the number of batteries connected was out of the scope of this paper. results obtained in the paper clearly show that the energy losses are decreased with the usage of two batteries instead of one, but the price of the battery is not compared with the energy price. this analysis will be the focus of our future research. acknowledgement: this work has been supported by the ministry of education, science and technological development of the republic of serbia, program for financing scientific research work, ev. no. 451-03-68 / 2020-14 / 200133. 136 m. stevanović, a. janjić, s. stojanović, d. tasić references [1] l. luo, s. s. abdulkareem, a. rezvani, m. r. miveh, s. samad, n. aljojo, m. pazhoohes, "optimal scheduling of a renewable based microgrid considering photovoltaic system and battery energy storage under uncertainty", journal of energy storage, vol. 28, p. 101306, 2020. [2] a. rufe, "on the efficiency of energy storage systems – the influence of the exchanged power and the penalty of the auxiliaries", facta universitatis, series: electronics and energetics, vol. 34, no. 2, pp. 173–185, june 2021. [3] h. saboori, s. jadid, "optimal scheduling of mobile utility-scale battery energy storage systems in electric power distribution networks", journal of energy storage, vol. 31, p. 101615, 2020. [4] h. karimi, s. jadid, a. makui, "stochastic energy scheduling of multi-microgrid systems considering independence performance index and energy storage systems", journal of energy storage, vol. 33, p. 102083, 2021. [5] p. firouzmakan, r. hooshmand, m. bornapour, a. khodabakhshian, "a comprehensive stochastic energy management system of micro-chp units, renewable energy sources and storage systems in microgrids considering demand response programs", renewable and sustainable energy reviews, vol. 108, pp. 355–368, 2019. [6] e. pons, m. repetto, "a topological reconfiguration procedure for maximising local consumption of renewable energy in italian active distribution networks", int. j. sustain. energy, vol. 36, no. 9, pp. 887– 900, 2016. [7] i. staffella, m. rustomjib, "maximising the value of electricity storage", journal of energy storage, vol. 8, pp. 212–225, 2016. [8] z. qing, y. nanhua, z. xiaoping, y. you, d. liu, "optimal siting and sizing of battery energy storage system in active distribution network", in proceedings of the 4th ieee/pes innovative smart grid technologies europe (isgt europe), 2013. [9] n.s. pearre, l.g. swan, "technoeconomic feasibility of grid storage: mapping electrical services and energy storage technologies", appl. energy, vol. 137, pp. 501–510, 2015. [10] g. carpinelli, g. celli, s. mocci, f. mottola, f. pilo, d. proto, "optimal integration of distributed energy storage devices in smart grids", trans. smart grid, vol. 4, no. 2, pp. 985–995, 2013. [11] d.magnor, d.u.sauer, "optimization of pv battery systems using genetic algorithms", energy procedia, vol. 99, pp. 332–340, 2016. [12] r. sakipour and h. abdi "optimizing battery energy storage system data in the presence of wind power plants: a comparative study on evolutionary algorithm," sustainability 2020, vol. 12, p. 10257, 2020. [13] p. boonluk, a. siritaratiwat, p. fuangfoo, and s. khunkitti, "optimal siting and sizing of battery energy storage systems for distribution network of distribution system operators," batteries, vol. 6, no. 4, 56, 2020. [14] l. debarberis, p.lazzeroni, s. olivero, v.a. ricci, f.stirano, m.repetto, "technical and economical evaluation of a pv plant with energy storage", in proceedings of the iecon 2013-39th annual conference of the ieee industrial electronics, 2013. [15] p. lazzeroni, m. repetto. "optimal planning of battery systems for power losses reduction in distribution grids," electric power systems research, vol. 167, pp. 94–112, 2019. [16] s.b. karanki, d. xu, b. venkatesh, b.n. singh, "optimal location of battery energy storage systems in power distribution network for integrating renewable energy sources", in proceedings of the ieee energy conversion congress and exposition (ecce), 2013. [17] e. bompard, e. carpaneto, g. chicco, r. napoli, "convergence of the backward/ forward sweep method for the load flow analysis of radial distribution systems", electr. power energy syst., vol. 22, no. 7, pp. 521– 530, 2000. instruction facta universitatis series: electronics and energetics vol. 27, no 3, september 2014, pp. 389 398 doi: 10.2298/fuee1403389p analysis of measurement error in direct and transformer-operated measurement systems for electric energy and maximum power measurement  slaviša puzović 1 , branko koprivica 2 , alenka milovanović 2 , milić đekić 2 1 edb užice, prijepolje, serbia 2 faculty of technical sciences ĉaĉak, university of kragujevac, serbia abstract. analysis of error in measuring electric energy and maximum power within direct and half-indirect measurement system at the voltage of 0.4kv is presented in the paper. the analysis involved all the elements of the measurement system, i.e. calibration and testing of the transformer-operated and direct digital energy meters and measuring current transformers. this equipment was also used for measurements in the transformer substation aiming at error analysis at measurements made under the real conditions. the results obtained show significant negative measurement error introduced by the energy meters under overload conditions. energy meters have lower values of both the consumed electric energy and maximum power in this operating mode, which can be interpreted as a loss. key words: measurement error, digital energy meters, measuring current transformers 1. introduction in the early xxi century, the power system of serbia is facing numerous strategic challenges, one of the most important ones being enhancing energy efficiency of the systems for generation, transmission and distribution of electricity. the continual increase in electricity consumption, changed consumers’ structure and inhibited construction of the resources and the network caused the long-term and excessive operation of the power system. this has resulted in its inefficient operation and has led to substantial electricity losses. these losses may be due to a number of reasons, one of major factors that require analysis being the error at measuring electric energy and maximum power (maximum average fifteen-minute active power). the systems of half-indirect of both electric energy and maximum power include measuring current transformers and transformer-operated measurement instruments for measuring active and reactive electric energy, as well as those measurement instruments  received january 28, 2014; received in revised form march 28, 2014 corresponding author: branko koprivica faculty of technical sciences ĉaĉak, svetog save 65, 32000 ĉaĉak, serbia (e-mail: branko.koprivica@ftn.kg.ac.rs) 390 s. puzović, b. koprivica, a. milovanović, m. đekić for electric energy and maximum power measurement in direct systems. the measuring instruments need to provide the required accuracy in operation. given that measuring current transformers need to meet the given accuracy class (up to 120% of the given current), the question is whether or not the measuring current transformers exceed the rated accuracy class limits when the primary current is near zero, as well as when it exceeds 120% of the rated current, and even when the overload amounts to 100%, [1, 2]. similarly, the question is also raised as to the extent to which changes in the load at the secondary windings of measuring current transformers affect measurement accuracy. this primarily refers to replacing measuring instruments at the secondary windings of measuring current transformers, i.e. replacing electro-mechanical meters with less energy-consuming digital ones. precise determination of the rated power of measuring current transformer is of utmost importance as the accuracy class and security factor are adjusted to that power. as transformer-operated instruments for measuring active and reactive electric energy and maximum power, which within the system of half-indirect measuring are connected to the measuring current transformers’ secondary windings, are dimensioned to comply with the rated secondary electric current of the measuring current transformers (1a or 5a). in [3-4] there is raised the issue of how the measuring instruments behave when the current through the measuring current transformers exceeds the specified one. the same goes for the measuring instruments within the direct measuring system. the base current in the latter is usually 10a with maximum current amounting to 40a, 60a, 80a or 100a, which are usually exploited in conditions where actual current values are twice as high as those of maximum ones. the aim of this paper is to examine how measuring current transformers and direct and transformer-operated three-phase energy meters behave under underload and overload conditions, and determine the measuring error occurring thereby. recent research regarding the accuracy of the measuring current transformers and energy meters consider mostly the impact of non-linear loads, i.e. the distortion of current and voltage, on the value of measurement error [5-9]. the influence of current and voltage thd has been studied separately for measuring current transformers, as well as for current transformers embedded in energy meters. analyses presented show the significant influence of thd on phase error of both types of current transformers. this error is highly dependant on the frequency, so measuring the harmonics may be highly inaccurate. generally, high error may be expected when load current is nonsinusoidal. given the fact that literature does not provide enough information on the measurement errors under underload and overload conditions, the idea was to perform a detailed examination on this issue. the analysis presented in this paper includes separated laboratory testings on measuring current transformers, and direct and transformer-operated three-phase energy meters, under underload and overload conditions. furthermore, the paper presents the results obtained through measurements in a 10/0.4kv substation. 2. measuring electric power and energy and measurement errors the measurement system for electric energy and peak power at the voltage level of 0.4kv includes the measuring current transformers and transformer-operated instruments for measuring active and reactive power, and maximum power in transformer-operated measurement system. the measurement system also involves instruments for measuring active and reactive power, and maximum power within the direct measurement system. analysis of measurement error in direct and transformer-operated measurement systems... 391 in this paper, measuring current transformers of 50a/5a, 100a/5a, 150a/5a and 400a/5a current ratios (manufacturer fmt zajeĉar) were tested, as well as the digital energy meters of enel belgrade, i.e. two three-phase transformer-operated energy meters and three direct three-phase energy meters. 2.1. measuring current transformer errors measuring current transformers includes current, phase and complex error. current error, gi, results from the deviation of actual transmission ratio from its specified value. it is determined by [1, 2]: 2 1 1 100%n i m i i g i   (1) where mn = i1/i2 is the indicated transformation ratio, and i1 and i2 are the primary and secondary windings currents. phase error, i, is defined by the angle between the secondary and primary current phasors. phase error is positive if the secondary current leads the primary current. given that the distortion of the secondary current is possible at the increased primary current, which results from the saturation in the core, complex error can be defined with measuring current transformers as follows: 2 2 1 1 0 1 1 ( ) d 100% t i np m i i t i t    (1) the accuracy class of a measuring current transformer is equal to the absolute value of the current error expressed in percentage, at the specified load on the secondary winding and 120% of the rated primary current. standard class accuracies are 0.1, 0.2, 0.5, 1, 3 and 5. measurement of the electricity consumption does not include accuracy classes 1, 3 and 5. fig. 1 shows the limit values of the current and phase errors of measuring current transformers of accuracy classes 0.1, 0.2, 0.5 and 1, set out in [10]. thus, for a transformer of accuracy class 1, limit of the current error is at 120% of the rated primary current and specified load on the secondary windings of the measuring current transformer. 20 g i i1n ±1 40 60 80 10 0 12 0 % ±2 ±3 % 1 0.5 0.2 0.1 20 δ i i1n ±50 40 60 80 10 0 12 0 % ±100 ±150 min 1 0.5 0.2 0.1 a) b) fig. 1 error value range: a) current error, b) phase error 392 s. puzović, b. koprivica, a. milovanović, m. đekić 2.2. digital energy meters errors three-phase energy meters (direct and transformer-operated) are intended for measuring active and reactive electric energy in three-phase voltage system of the specified frequency of 50 hz. the accuracy of digital measurement groups is set out in [11]. under the referential conditions, the percentage error should not exceed the value of the relevant accuracy class, tables 1 and 2. table 1 percentage error limits in single-phase and three-phase direct energy meters of accuracy class 1 (ib is the base current, imax is the maximum current) current values power factor error limit in % b b0.05 0.1 i i i  1 1.5 b max0.1 i i i  1 1.0 b b0.1 0.2 i i i  0.5(ind.), 0.8(kap) 1.5 b max0.2 i i i  0.5(ind.), 0.8(kap.) 1.0 table 2 percentage error limits in single-phase and three-phase transformer-operated energy meters of accuracy class 1 (in is the rated current, imax is the maximum current) current values power factor error limit in % n n0.02 0.05 i i i  1 1.5 n max0.05 i i i  1 1.0 n n0.05 0.1 i i i  0.5(ind.), 0.8(kap.) 1.5 n max0.1 i i i  0.5(ind.), 0.8(kap.) 1.0 3. measurement results 3.1. tests with measuring current transformers the testing of measuring current transformers was performed in fmt zajeĉar, a measuring transformer company, on measuring current transformers of 50a/5a, 100a/5a, 150a/5a and 400a/5a current ratios. three stem 081 type transformers (50a/5a, 100a/5a, 150a/5a) and one sten 081 type transformer (400a/5a) were used [3]. the testing was performed under the following conditions: voltage: rated phase voltage, current: from 0% to 200% of the rated current, power factor: cosφ=1, cosφ=0.8(ind), power: sn=1.25va, sn=2.5va, sn=10va, and frequency: rated frequency of 50 hz. current errors expressed in % and phase errors expressed in minutes at different current values were measured. all the measurements gave similar distribution of errors, regardless of the measuring current transformer ratio and the load on the secondary winding. typical graphs that show current and phase errors with the primary current are given in figures 2 and 3. analysis of measurement error in direct and transformer-operated measurement systems... 393 0 50 100 150 200 -0,7 -0,6 -0,5 -0,4 -0,3 -0,2 -0,1 0,0 0,1 0,2 0,3 0,4 10va, cos=0.8 g i [%] i 1 /i n [%] 1.25va, cos=1 2.5va, cos=0,8 2.5va, cos=1 0 50 100 150 200 -3,0 -2,5 -2,0 -1,5 -1,0 -0,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 g i [%] i 1 /i n [%] a) b) fig. 2 variation in the current error with the primary current for different loads on the secondary winding: a) without the designated error limits, according to standard, and b) with the designated error limits, according to standard (broken line) the results presented suggest that the current and phase errors are lower than the limit values, regardless of the value and power factor of the primary load, and the load on secondary windings of the measuring current transformer. 0 50 100 150 200 0 5 10 15 20 25 30 1.25va, cos=1 2.5va, cos=0,8 2.5va, cos=1 10va, cos=0.8  [min] i p /i s [%] 0 20 40 60 80 100 120 140 160 180 200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 i 1 /i n [%]  [min] a) b) fig. 3 variation in the phase error with the primary current for different loads on the secondary winding: a) without the designated error limits, according to standard, and b) with the designated error limits, according to standard (broken line) figure 4 presents the current error for the different current ratios of measuring current transformers and the 2.5va load on the secondary winding at cosφ=1. it can be seen that the current ratio changes, for the same load at secondary winding does not affect the current error. 394 s. puzović, b. koprivica, a. milovanović, m. đekić 0 50 100 150 200 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 400a/5a 100a/5a 50a/5a i 1 /i n [%] g i [%] 150a/5a fig. 4 current error for the different current ratios of measuring current transformers 3.2. testing of digital energy meters digital energy meters were tested using a control measurement system, i.e. iskramatic cats system [12, 13]. the testing was done on two three-phase transformer-operated energy meters (manufacturer enel belgrade, type dmg2), and three direct three-phase energy meters, type db2mg, of the same manufacturer [4]. the testing involved the following conditions: voltage: specified phase voltage, current: from 0.5 % to 200% of 5a rated current (transformer-operated energy meters), and from 2.5 % to 1000% of 10a base current (direct energy meters), power factor: cosφ=1, cosφ=0.5 (ind.), cosφ=0.8 (ind.), cosφ=0.8 (kap), and frequency: the rated frequency of 50 hz. errors for active and reactive electric energy were measured, as well as for the maximum power. three-phase transformer-operated energy meters fig. 5 shows the measurement errors occurring at measuring active electric energy for two transformer-operated three-phase energy meters of the same type, while cosφ=1. fig. 6 shows the error occurring at measuring active energy for the different power factor values (cosφ=1, cosφ=0.5(ind), cosφ=0.8(ind), cosφ=0.8(cap)) using a three-phase transformer-operated energy meters. a similar distribution of errors occurred when measuring reactive power. the graphs in figs. 5 and 6 show that errors occurring at measurements exceed the range of the error limits set out by a particular standard. analysis of measurement error in direct and transformer-operated measurement systems... 395 0 50 100 150 200 -10 -8 -6 -4 -2 0 2 i [%] g [%] 100 120 140 160 180 200 -10 -8 -6 -4 -2 0 g [%] i [%] fig. 5 the comparison of errors occurring at measuring active energy in two transformer-operated energy meters of the same type. broken line presents the error range set out by standard fig. 6 error occurring at measuring active energy at the different power factors direct three-phase energy meters base current for the tested direct measurement groups was 10a, whereas their maximum current was imax = 60 a or imax = 80 a. given that the testing was done with the currents not exceeding 100a, error in active and reactive power measurements was within the error range set out by standard when measurements were performed in the energy meter with maximum current imax = 80 a (tables 3 and 4). the reason for this is a small difference between the maximum current of the meter and the maximum current used in the testing. in two meters with imax = 60 a maximum current, this difference was substantially greater, which resulted in measurement errors (tables 5 and 6). table 3 percentage errors g % in direct energy meter, accuracy class 1 (active energy measurement, imax=80a) no. 1 2 3 4 5 6 7 8 9 i [a] 0.25 0.5 1 2 5 10 50 80 100 cosφ 1 1 1 1 1 1 1 1 1 error limit [%] ±1 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ±1 g % -0.78 -0.27 0.07 0.19 0.03 0.05 0.31 0.35 0.65 table 4 percentage errors g % in direct energy meter, accuracy class 1 (reactive energy measurement at cos 0.5  (ind), cos 0.8  (ind), imax=80a) no. 1 2 3 4 5 6 7 8 i [a] 5 5 10 10 50 50 100 100 cosφ 0.5 0.8 0.5 0.8 0.5 0.8 0.5 0.8 error limit [%] ±2 ±2 ±2 ±2 ±2 ±2 ±2 ±2 g % -0.33 -0.13 -0.2 -0.06 0.1 0.04 -0.03 0.17 396 s. puzović, b. koprivica, a. milovanović, m. đekić table 5 percentage errors g % in direct energy meter, accuracy class 1 (active energy measurement, imax=60a) no. 1 2 3 4 5 6 7 8 9 i [a] 0.25 0.5 1 2 5 10 50 80 100 cosφ 1 1 1 1 1 1 1 1 1 error limit [%] ±1 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ±1 g % 1.47 0.71 -0.2 -0.3 -0.33 -0.53 -0.66 -2.19 -4.22 table 6 percentage errors g % in direct energy meter, accuracy class 1 (reactive energy measurement at cos 0.5  (ind), cos 0.8  (ind), imax=60a) no. 1 2 3 4 5 6 7 8 i [a] 5 5 10 10 50 50 100 100 cosφ 0.5 0.8 0.5 0.8 0.5 0.8 0.5 0.8 error limit [%] ±2 ±2 ±2 ±2 ±2 ±2 ±2 ±2 g % -0,76 -1 -1,05 -4,64 maximum power measurement error measurement of the maximum power error was done on transformer-operated threephase energy meters at the current of 9a (180%) and cosφ=1. the results obtained show that peak power measurement errors at the load of 180%, cosφ=1, at a rated voltage and frequency on transformer-operated energy meters were –3.201% and –3.154%, respectively. specifically, referential measuring instrument gave the value of 5.9362kw, whereas energy meters showed the value of 5.744kw and 5.748kw. laboratory studies do not fully correspond to real conditions, which is primarily due to the short testing period. in addition, the testing carried out in laboratory is done for a finite number of measurement points at certain values of currents and power load factors. in practice, current values and load type can be changed very quickly within a wide range of values, whereas the long-term current overloads on the measurement equipment cause it to overheat, which can affect measurement characteristics of the equipment and the value of measurement errors accordingly. hence, the equipment tested in the laboratory was set up in a 10/0.4 kv substation for measurements in real conditions. substation feeders on which major changes and long-term overloads can be expected were used in these measurements. measurements performed in a 10/0.4 kv substation the measurements included setting up three measurement systems in a 10/0.4 kv substation. the complete measurement system comprised two transformer-operated energy meters dmg2, a single direct energy meters db2mg (imax = 80 a) and two sets of measuring current transformers with current ratios of 150a/5a 50a/5a, fig. 7. measurement systems were connected to each other so as to enable mutual load. analysis of measurement error in direct and transformer-operated measurement systems... 397 k l k l k l k l k l k l k l k l k l k l k l k l dmg2 5(6)a db2 mg 10-80a dmg2 5(6)a stem 081 150/5a stem 081 50/5a l1 l2 l3 n p fig. 7 connection diagram of the measurement system in a 10/0.4kv substation earlier measurements conducted in a substation showed that changes in current were within the range of 70a–120a. these current values provide nominal operation of measuring current transformers of 150a/5a current ratio. on the other hand, transformers with 50a/5a current ratio operate under overload. therefore, one of the transformeroperated energy meters (dmg2) operates in the nominal mode, whereas the other is overloaded. direct energy meter db2mg works with overload only partially. the average value of the phase voltage during measurement was 234v. the measurement of the consumed active and reactive energy, and maximum power over the period of 2h 45min was performed. table 7 shows the results of measurements obtained under the stated conditions. the results indicate a significant difference among the individual measurement systems. it can be assumed that the first measurement system, comprising measuring current transformers with 150a/5a current ratio and dmg2 transformer measurement group, gives the measurements with an error within an acceptable range (based on the results shown in previous subsections). compared with these results, the relative deviation in measurement results for other two measurement systems was calculated. the results also point to significantly greater deviations than allowed. table 7 percentage g % errors in direct energy meter, accuracy class 1 (active and reactive energy and peak power) dmg2+mct 150/5 db2mg dmg2+mct 50/5 wa [kwh] 138.90 135.37 119.50 wr [kvarh] 31.20 30.42 29.30 pmax [kw] 71.16 66.800 57.12 δwa [%]  -2.54 -13.97 δwr [%]  -2.5 -6.09 δpmax [%]  -6.13 -19.73 4. conclusion this paper presents the results of testing of the electric energy and maximum power measurement systems within the system of direct and half-indirect measurement at the voltage level of 0.4kv. laboratory studies of measuring current transformers indicated 398 s. puzović, b. koprivica, a. milovanović, m. đekić that the current and phase errors, regardless of the power factor and primary load values, and the load on the secondary windings of the measuring current transformer, are below the limit values. however, it is important to note that, when selecting measuring current transformer, attention should be paid to the load on the secondary winding, as it can affect the measurement error. laboratory testing of transformer-operated energy meters revealed that the measurement errors of active and reactive electric energy and maximum power are:  within the limits of accuracy class in overloads up to 70% (regardless of the load type),  beyond the limits of accuracy class in overloads above 70%, i.e.: 1) in 80% overloads the error ranges from 3.154% to 3.5%, and 2) in 100% overloads the error exceeds 9%. in direct energy meters, measurement results were within the limits of accuracy class when the value of the maximum current of the measurement group is slightly lower than the maximum operating current (up to 20%). higher values of the operating currents result in similar error values as in transformer-operated energy meters. measurements conducted in substation confirm the results obtained in laboratory conditions. increase in the measurement error can be expected under real conditions. the results obtained imply that the energy meters introduce significant negative measurement error under overload conditions. this infers that in this operating mode, energy meters have lower values of both the consumed electric energy and maximum power, which can be interpreted as a loss. future analysis in this area will be focused on the influence of current and voltage thd to the measuring current transformer and energy meters errors. references [1] p. duduković, m. đekić, electrical measurements, first edition, nauĉna knjiga, beograd, 1991. (in serbian) [2] v. bego, measuring transformers, školska knjiga, zagreb, 1977. (in serbian) [3] katalog proizvoda strujni transformatori za merenje 0.72 kv, fabrika mernih transformatora zajeĉar, zajeĉar 2010. [4] catalogues – db2mg, dmg1, dmg2, enel belgrade, belgrade, 2010. [5] a.e. emanuel, j.a. orr, "current harmonics measurement by means of current transformers", ieee trans. power deliv., vol. 22, pp. 1318–1325, july 2007. [6] p. mlejnek, p. kaspar, "calibrations of phase and ratio errors of current and voltage channels of energy meter", journal of physics: conference series, vol. 450, p. 012046, 2013. [7] d. stevanovic, p. petkovic, "the losses at power grid caused by small nonlinear loads", serb. jour. elec. eng., vol. 10, pp. 209–217, feb 2013. [8] m. soinski, w. pluta, s. zurek, a. kozłowski, "metrological attributes of current transformers in electrical energy meters", in proceedings of the international workshop on 1&2 dimensional measurement and testing. vienna, austria, 2012. [9] k. draxler, r. styblíkova, "effect of magnetization on instrument transformer errors", jour. elec. eng., vol. 10, pp. 209–217, feb 2013. [10] srps en 60044-1:2009, merni transformatori deo 1: strujni transformatori, institut za standardizaciju srbije, beograd, 25.02.2009. [11] srps en 62053-21:2008, oprema za merenje elektriĉne energije naizmeniĉne struje deo 21: statiĉka brojila aktivne energije (klase 1 i 2), institut za standardizaciju srbije, beograd, 29.12.2008. [12] j.g. webster, the measurement, instrumentation and sensors handbook, first edition, crc press, boca raton, fl, usa, 2000. [13] http://www.iskraemeco.si/emecoweb/eng/products/equipment/iskramatic_cats.html 12554 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 125 133 https://doi.org/10.2298/fuee2401125k © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper blockchain and outsourcing for specialised banking communities inna alexandrovna kruglova1, valery alexandrovich dolbezhkin2, shota andreevich egutia2 1anatoly sobchak international banking institute, st. petersburg. 60, nevsky ave., st. petersburg, russia 2department of banking business and innovative financial technologies, anatoly sobchak international banking institute, st. petersburg. 60, nevsky ave., st. petersburg, russia orcid ids: inna alexandrovna kruglova https://orcid.org/0000-0002-2064-428x valery alexandrovich dolbezhkin https://orcid.org/0000-0003-2662-202x shota andreevich egutia https://orcid.org/0000-0001-8114-1689 abstract. this article explores the potential benefits of implementing blockchain technology and outsourcing contracts in the new market participants called specialised banking communities, formed as part of the banking sector reform in russia. the authors compare this experience to the european model of banks' unions in institutional protection schemes (ips), highlighting similarities and differences. they emphasize the objective properties of banking communities as subjects of production cooperation in the financial sector. the article also discusses the parameters for implementing a private blockchain network, specifically focusing on the priorities of pos (proof of stake) and dpos (delegated proof of stake) consensus algorithms. to optimize operational resources, the authors recommend the use of outsourcing contracts for the better distribution of digital production capacities within these communities. overall, this article highlights the potential of blockchain technology and outsourcing contracts in improving the efficiency and effectiveness of specialised banking communities in russia. key words: banks, specialised banking communities, financial sector reform, blockchain, outsourcing contracts 1. introduction digitalisation of the economy causes the emergence of new exchange products, new economic relations, new economic entities on the market, which as a result significantly affects the change in the conditions of competition [1]. in the segments of the economy of nonmaterial production, and most strongly in the financial sector, there is a rapid received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: inna alexandrovna kruglova anatoly sobchak international banking institute, st. petersburg. 60, nevsky ave., st. petersburg, russia e-mail: kruglovaia@ibispb.ru https://orcid.org/0000-0002-2064-428x https://orcid.org/0000-0003-2662-202x https://orcid.org/0000-0001-8114-1689 126 i. a. kruglova, v. a. dolbezhkin, s. a. egutia fragmentation into the largest and small entities, which differ significantly in terms of competitive strength, and, despite the increasing availability of new technologies and the preservation of the practice of "niche development" of small banks, the risk of prevalence of oligopoly is objectively increasing. one of the possible compromise solutions to mitigate this risk, the authors consider a forward-looking reform of the sector, the concept of "specialised banking communities" (sbc), presented by the bank of russia in the summer of 2023. [2]. in this publication, the authors consider small bank communities as market entities with new and positive conditions for the adoption of new digital technologies, in particular blockchain or, more generally, distributed ledger. in addition to the advantages of market stability, group protection from risks, small bank communities can obtain additional economic benefits from optimising the exploitation of their aggregate digital production resources through outsourcing. the object of the study is the reforming of the financial sector under the influence of digital economy factors. the problems and advantages of special banking communities using blockchain technology and outsourcing relationships are the subject of this study. the relevance of this study is due to the novelty of the structure reform, the inevitable occurrence of objective risks and problems in the financial sector, as well as the lack of actual publications on this topic. the article consists of an introduction, the first section describing the essence of the structural reform of the banking sector, the second section discussing the prospects for the introduction of digital technologies in new forms of cooperation between banks and the conclusion containing the main results and judgments of the authors. 2. the specialised banking communities concept as a reform of the banking sector creation of banking communities to reduce the significance of objective risks of the financial sector has been known for a long time, and it is most marked in numerous national systems of protection of bank deposit guarantees. the european community practices a more universal mechanism of banks' uniting in the organisational form of "institutional protection scheme" ips [3]. ips for a group of banks is defined (art. 113(7) capital requirements regulation (crr) v. 2013 [4]) as "a contractual or statutory liability arrangement which protects those institutions and in particular ensures their liquidity and solvency to avoid bankruptcy where necessary" [5]. this is the main purpose of the alliances. the european ipss have between 40 and 840 members each, and this very large size indicates the prioritisation of "market-wide" objectives for the establishment and operation of the associations. in a number of cases, the institutional protection scheme with its own reserve fund acts firstly as a deposit protection mechanism (1 in austria, 2 in germany). this is a significant market factor, as in the eurozone this mechanism covers 23.3% of deposits [6]. as accompanying positive features of ips are envisaged opportunities for member banks to promote a common brand name (e.g. raiffaizen) and to obtain transaction cost savings on co-operated deals. the russian version of this regulatory reform is presented in 2023 in the format of the concept of special banking communities (sbc) [2]. the main objective of the reform is to ensure stable operation of the financial sector and sustainability of the banking system of credit institutions under the objective risk of non-equilibrium competition (risk of asset concentration). the task of additional deposit protection is not relevant for russian sbcs blockchain and outsourcing for specialised banking communities 127 due to the flawless operation of the federal system of mandatory deposit insurance since its establishment in 2004. in russia in 2023 there are just over 300 banks operating, and the banking sector is characterised by high concentration: the first 100 banks own 98% of the sector's assets, including the first 10 largest 77% [7]. in general, based on the known number of banks, it is unlikely to create one or two large sbcs with more than 100 participants. the prospect is seen in the creation of a small number of associations with the number of participants of 5-20 banks. large systemically valuable banks can create an "umbrella" sbc under their aegis, acting as a franchisor for small and medium-sized participants. in such an organisational structure, there is an absolute leader with advantages in capital, technology, competences and defining the rules of joint work. another organisational form of sbcs is an "alliance", in which participants have equal or comparable status, and coordination is ensured by a specially created central body. in this variant, small banks participating in sbcs mutually complement each other, retaining a certain degree of independence, even sovereignty, in terms of a standalone client base, product brand, owners' preferences, industry/regional client competences, risk management specific to the client base, and possibly market and captive funding. a significant feature of russian sbcs (compared to the european ips practice) seems to us to be the emphasis on production co-operation accelerated mutual settlements, cross-selling, delegation of functions, and resource sharing. it is this aspect of the reform that attracts our attention, while its main objective to increase the sustainability of the bank sector by equalising the size of competing entities is certainly recognised, but is not the subject of study here. in the following, we consider sbcs in the structural version of an "alliance". the authors consider that the combination of objective properties of such associations of banks forms a specific favourable environment for the effective application of new digital technologies. such properties of sbcs (specific in relation to other forms as groupings, associations, ecosystems) can be considered as follows: ▪ homogeneous regulatory environment (practice), as all sbc participants are within the prudential supervision of the bank of russia; ▪ practically homogeneous assortment programme within the framework of a banking licence, taking into account the commoditisation of banking products; ▪ homogeneous environment (structure, sources) of useful data used for planning/ managing its market development; ▪ common strategic objectives of survival, preservation of business in conditions of growing high-tech "new" competition (fintech/bigtech); ▪ similar or compatible production resources, predominantly digital; ▪ possibility of co-operative forms of sharing expensive technologies; ▪ arbitration of conflicts of interest based on collegial management (in the version of sbc "alliance"). the creation of sbcs within the financial sector will contribute to the increase of banks' business efficiency through access of small entities to expensive resources (co-operative supply), faster introduction of new technologies into the nominal closed system of users, and increased efficiency of exploitation of production resources available in sbcs. the question of the rational number of sbc participants remains open, as the formation of a co-operative environment will require investments, the payback of which directly depends on the aggregate size of the customer markets served by sbc banks and the network revenue effect. 128 i. a. kruglova, v. a. dolbezhkin, s. a. egutia 3. technologies to improve the effectiveness of specialised banking communities taken together, the characteristics of sbсs form specific conditions for the application of unifying technologies. among such technologies we will single out two. these are digital production technology of distributed ledger, in a particular case blockchain. and organisational technology outsourcing, in a particular case outsourcing of financial functions, (operations, microservices), i.e. actions to transform the basic resource directly affecting the characteristics of the final financial product (security, speed, accessibility). 3.1. blockchain and distributed ledger technologies blockchain, which appeared in 2009, is now widely known due to the popularity of cryptocurrencies derived from it, and relatively widespread due to its objective technological advantages in the field of secure data and rights turnover. the properties of blockchain and its advantages and disadvantages of implementation in the financial sector are actively discussed in scientific and practical areas [8, 9, 10]. in banking, blockchain is used for remote and trusted customer identification, facilitating cross-border multi-currency payments, bancassurance, issuance of stablecoins and tokens both for customers and for the bank (commercial bank money token, (cbmt), jpm coin [11], hsbc tokenised deposits) to optimise accounting policies [12], trade finance (e.g. factoring), borrower scoring, and intra-country payments [13]. the global payment system swift is experimenting with blockchain in a sandbox testing triggered payments for dlt solutions, currency exchange, delivery versus payment, and liquidity preservation mechanisms [14]. the application of blockchain by banks to ensure the security and efficiency of the credit system is actively discussed by experts [15, 16]. a special place in the complex relations between blockchain and banks is occupied by cbdc a new tool of payments and settlement built on blockchain and promoted by national central banks as a mandatory element of the monetary system of the state. this is the prospect of the next 2-5 years and banks are involved in piloting their national projects, including in russia. one of the barriers to the widespread use of blockchain technology in the financial sector is "scaling," i.e., the limited ability to increase the number of nodes in the network. in the case of blockchain application for performing functions in sbcs, this barrier is not significant, as the number of required nodes will not exceed several dozens (conditionally according to the number of participant banks), and it is acceptable for all practically developed blockchain algorithms. the principles of governance and consistency of interests in sbcs determine the rationality of using a private blockchain (lesspermission), with strong verification of all nodes, which provides an additional element of protection of data circulating in the sbcs blockchain. the small number of nodes in the sbc blockchain, which are relatively powerful compared to personal users, necessitates the distribution of typical distributed registry functionalities among participating banks. a rough example of distribution is shown in fig. 1. also, based on the above properties of sbcs, we can preemptively suggest the choice of a consensus algorithm. the small number of nodes in the network and the presence of a central sbc coordinator directly imply the prioritisation of two algorithms out of the known dozen of generally applicable ones. these are delegated proof-of-stake (dpos) based on delegating validation authority to specific nodes in the network, and proof-of-authority (poa) based on directly specifying validator nodes (a default list of unique nodes (dunl) authorised at a time interval). such algorithms have already been practically tested specifically in the financial sector, e.g. ripple's xrpl (about 40 dunl validators out of the blockchain and outsourcing for specialised banking communities 129 available 118 in 2022), and hedera/phantom (64 validators as of early 2023). such a limited blockchain does not require coin mining, which is generally a source of volatility in the internal currency, negatively impacting the current transactions costs of nodes. fig. 1 a rough diagram of the distribution of blockchain functionalities in a small number of sbc nodes. compiled by the authors. sbc participants retain legal autonomy and while conducting their data processing for marketing policy management must each comply with personal data protection requirements. it is blockchain that makes it possible to organise a reliable exchange of significant data on a client transaction without disclosing the personal data of the bank's client. in particular, a protected and guaranteed reliable credit history of each client of any sbc participant is formed. inevitably overlapping interests of sbc participants, e.g. in terms of customer lending, require minimising the risk of cross-lending within the sbc, since in the context of consolidated responsibility for regulatory compliance, the credit risk of internal over-lending is multiplied for the sbc. the high data security of blockchain allows to eliminate or limit overcrediting without disclosing personal data. a special case of credit risk is the simultaneous duplicate use of loan collateral by one borrower at different banks, or by multiple co-owners of the same collateral at different banks, which are fraudulent. the direct analogy of this banking challenge to a key blockchain challenge blocking a double-spending attack is noted here. a "51%" attack plan is unlikely in reality, but "finney attack" and "race attack" options should be considered. figure 2 presents a rough scheme of interaction of credit organizations in solving this task as active nodes of the blockchain network. blockchain will allow to securely automate consolidated (syndicated) lending to a borrower (by parts) from the financial resources of several sbc participants, which can 130 i. a. kruglova, v. a. dolbezhkin, s. a. egutia both contribute to the distribution of objective credit risk of one borrower and increase the availability of credit products for clients of the participating banks. tokenisation of certain financial functions allows, within the framework of a closed sbc system, to form financial products to order, combining not only purely financial operations (transfer, conversion, ...), but also related services calculation of trigger indices, e.g. credit rating, investment recommendations, etc., as well as other services. in addition, the private blockchain will be effective, but without the specifics of sbcs, in the implementation of internal document flow between group members, and possibly for mutual a2a (p2p) payments. probably, the main problem of the private blockchain in the sbc (autonomous platform of tokenised settlements) will be its compatibility with external market systems built on other blockchain algorithms, for example, in other sbcs, as well as in the future with the federal platform of digital national currency. the solution to the problem lies outside the sbcs, as an industry (sectoral) solution is needed. either regulatory creation of a unified standard for blockchain protocol compatibility, or technical implementation of a transfer ("bridge") digital platform. 3.2. outsourcing and shared resources the association in a sbc of several economic entities similar in terms of organisational structure (due to common regulatory requirements) and production resources (due to homogeneity of the portfolio of financial services) makes the task of optimising the sharing of production resources and competences within the sbc relevant (not in the interests of the sbc, as it is generally not a financial market participant, but in the interests of the sbc participants themselves, who receive their income from servicing their clients and independent operations on the open market). multiple duplication of functional capabilities in special areas of data processing, payment execution, clearing, ... is irrational. it is logical to build an arrangement of partial specialisation and mutual functional complementation of banks within the framework of the sbc. the authors see outsourcing as a promising mechanism for solving this problem the use of third-party resources (relative to each sbc participant) for the performance of certain functions obligatory for the entity on a commercial basis [17, 18, 19]. in this context, two commercial banks are both the provider (supplier) of the function and its customer. in order to ensure market/operational stability of the banks of the sbc participants, in particular to avoid the risk of loss of continuity of financial services, partial outsourcing of functions of a single entity is preferable, i.e. each participant retains a limited "hot reserve" of production resources to perform a critical/significant function. sbc allows to create a cooperative digital network of distributed production resources (analogue of wlan) with ondemand access. in this variant sbc realises for a group of banks the "libertarian" idea proposed [20] to the banking sector for joint opposition to risk outsourcing with fintech companies. in fact, the network of outsourcing agreements forms, from the point of view of fault tolerance, some analogue of privet blockchain net, but without cryptography, without validation, without storing copies of transaction history which in this case are not required. in the opinion of the authors of this article, all banks participating in the sbc retain their independence in concluding contractual transactions, including outsourcing transactions, with third-party companies. blockchain and outsourcing for specialised banking communities 131 fig. 2 symbolic scheme of interaction of credit organizations in blocking the duplication of collateral. compiled by the authors. on the one hand, homogeneity within the sbc is an advantage, as the parties to the transaction are similar in terms of business models and regulatory norms. compatibility of the subjects' management regulations and a kind of unity of sbc management reduces contractual (legal) outsourcing risks that objectively exist in outsourcing functions if the partners operate in different regulatory sectors of the economy, e.g. banks on the one hand and fintech payment services, or big data aggregators on the other. the sbc coordinating authority may well define a general algorithm and criteria for economically justified selection of a function provider within the sbc, possibly with a high degree of automation of its application, given the homogeneous structure and completeness of commercial banks' reporting. probably, the price risk associated with the peculiarities of service cost formation, in particular, the asymmetry of information of the parties to the deal, is also reduced within the framework of sbc. in a homogeneous sbc environment it will be insignificant. as a result, the cost of "internal" outsourcing will be more reasonable, and a transfer pricing mechanism will be applied. but, on the other hand, the "homogeneity" of the participants' production resources determines objective weaknesses of such a deal within the sbc. the proximity of the competences of the parties to the transaction for the performance of the function determines the low potential for commercial efficiency of outsourcing. effective outsourcing requires a significant difference (positive gap) in the special competences of the parties, which is possible if there is a significant difference in the size and experience of the banks within the sbc, i.e. a low degree of homogeneity of the participants. technological innovations are 132 i. a. kruglova, v. a. dolbezhkin, s. a. egutia expensive and are born in specialised profile hi-tech enterprises and r&d centres of the largest banks and main implementation of advanced developments comes from such centres of special competences. the competition of sbc participants among themselves for income, preventing the provision of resources for use by a partner, can also become a significant factor restraining outsourcing, and this objective contradiction should be regulated when creating sbcs. the shared use of production resources poses challenges for sbcs in terms of optimal allocation of resources (investments) and competences in partial or even chain outsourcing. the exit of an individual bank from the sbc together with the production resources included in the value chains of other sbc entities is a particularly significant risk. 4. conclusions the sbc reform not only creates market structures smoothing the risks of uneven market development of small and largest banks in the financial sector, i.e. "nodes" stimulating stability of the financial sector, but also creates clusters with local conditions for the introduction of innovative technologies preferable to the implementation of technologically similar projects in the full market, in the environment of unaffiliated entities bearing objective risks. the specificity of sbcs objectively contributes to mitigation of such risks. the homogeneity of the organisational and technological environment of sbcs determines the relative higher efficiency of blockchain and outsourcing technologies. interaction between banks within sbcs can be more effective when using a private blockchain to solve common tasks of participants in the areas of payments, information protection, and reduction of financial and operational risks. the main advantage of such a solution is minimizing the number of control and verification operations between banks due to the high reliability of data recorded in the blockchain. expected implementation challenges include the limited number of sbo blockchain nodes, which reduces the number of independent copies of data, and the likely lack of compatibility between banks' business models, especially in terms of internal information security. the homogeneity of tasks and similarity of banks' technologies in the sbc allows to increase the efficiency of exploitation of available production digital resources of the participants on the basis of active application of intragroup outsourcing. the introduction of sbo models into the structure of the banking sector objectively depends on the regulator's activity, since it is the regulator that needs to adjust special sectoral legislation. on the other hand, the incentive is the objective fragmentation of the banking sector into a limited group of the largest universal banks and a massive group of small and medium-sized banks. the groups (strata’s) differ radically in terms of available resources necessary for successful technological development. the sbo reform combines the key interests of the regulator in terms of competition protection and the fundamental interests of small banks in terms of market survival. blockchain and outsourcing for specialised banking communities 133 references [1] m.v. sigova, v.a. dolbezhkin, "information as a new resource for the market economy. the banking aspect", problems of market economics, no. 4, pp. 87-101, 2022. [2] concept of special banking communities. bank of russia, 2023, url: https://cbr.ru/content/document/file/ 148252/20230602_bbl.pdf [3] institutional protection schemes, declaration of institutional protection schemes in europe, 2021, url: https://www.bvr.de/p.nsf/0/10568748536d2608c12586b9002d8b3e/$file/210406_ips%20declaration%20c mdi_summit_final.pdf [4] capital requirements regulation (crr). eba, 2013, url: https://www.eba.europa.eu/regulation-and-policy/ single-rulebook/interactive-single-rulebook/1142 [5] institutional protection schemes – what are their differences, strengths, weaknesses, and trackrecords? economic governance support unit (egov) directorate-general for internal policies pe 699.511, 2022, url: https://www.europarl.europa.eu/regdata/etudes/idan/2022/699511/ipol_ida(2022)699511_en.pdf [6] european banking authority, deposit guarantee schemes data, 2022, url: https://www.eba.europa.eu/ regulation-and-policy/recovery-and-resolution/deposit-guarantee-schemes-dat [7] review of the russian financial sector and financial instruments 2022. bank of russia, 2023, url: https://cbr.ru/collection/collection/file/43892/overview_2022.pdf [8] i. a. kruglova, v. a. dolbezhkin, "objective barriers to the implementation of blockchain technology in the financial sector", in proceedings of the international conference on artificial intelligence applications and innovations (ic-aiai), nicosia, cyprus, 2018, pp. 47-50. [9] decentralised finance, bank of russia, moscow, 2022, url: https://cbr.ru/content/document/file/141992/ report_07112022.pdf [10] p.k.ozili, "decentralized finance research and developments around the world", journal of banking and financial technology, vol. 6, pp. 117–133, 2022. [11] onyx by j.p. morgan. transforming the future of banking, jpmorgan chase & co., url: https://www.jpmorgan.com/onyx/about [12] tokenised non-cash money in bank accounts. bank of russia, 2023, url: https://www.cbr.ru/content/ document/file/152926/review_token.pdf [13] blockchain in financial services: market forecasts, key opportunities & vendor strategies 2021-2030, url: https://www.juniperresearch.com/researchstore/fintech-payments/blockchain-in-financial-services-research-report [14] swift starts beta testing cbdc connector. ledger insights, 2023, url: https://www.ledgerinsights.com/swiftcbdc-connector-beta-testing/ [15] das fintech traxpay und die dz bank haben eine kooperation vereinbart — finanzbusiness, 2023, url: https://finanzbusiness.de/nachrichten/banken/article13852120.ece?utm_campaign=boerseonline.de&utm_source=traffic_deals&utm_medium=rss [16] z. wang, g. lu, y. gao, m. gao, "design and research of credit bank system based on blockchain oracle", learning and analytics in intelligent systems recent advancements in computational finance and business analytics, pp. 243-252, 2023. [17] outsourcing risk management in the financial market. a report for public consultations, moscow, 2022, url: http://www.cbr.ru/content/document/file/142481/consultation_paper_06122022.pdf [18] core principles for effective banking supervision. basel committee on banking supervision. 2012. url: https://www.bis.org/publ/bcbs230.html [19] guidelines on outsourcing arrangements. eba/gl/2019/02, url: https://www.eba.europa.eu/regulation-andpolicy/internal-governance/guidelines-on-outsourcing-arrangements [20] s. b. varlamova, "principles of building a shearing system of bank outsourcing based on the libertarian model of data-processing", banking services, no. 7-8, pp. 45-52, 2020. facta universitatis series: electronics and energetics vol. 30, no 3, september 2017, pp. 313 326 doi: 10.2298/fuee1703313h circular test structures for determining the specific contact resistance of ohmic contacts  anthony s. holland, yue pan, mohammad saleh n. alnassar, stanley luong school of engineering, rmit university, melbourne, victoria, australia abstract. though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. error correction has been a major concern in regard to specific contact resistance test structures and investigations by finite element modeling demonstrate that test structures utilising circular contacts can be more reliable than those designed to have square shaped contacts as test contacts become necessarily smaller. finite element modeling software nastran can be used effectively for designing and modeling ohmic contact test structures and can be used to show that circular contacts are efficient in minimising error in determining specific contact resistance from such test structures. full semiconductor modeling software is expensive and for ohmic contact investigations is not required when the approach used is to investigate test structures considering the ohmic interface as effectively resistive. key words: ohmic contact, specific contact resistance, contact resistance, test structure, circular transmission line model, transmission line model. 1. introduction in practice, ohmic contacts are one of the least complex aspects of semiconductor devices. the modelling of an ohmic contact requires only contact geometry, material resistivities and the specific contact resistances of all contact interfaces in the contact structure. if a contact is ohmic then its current-voltage behaviour is linear. an ohmic contact interface has a finite thickness defined by the alignment of the fermi levels of the two contacting materials at equilibrium and the thickness is really that of the „disturbed‟ region (depletion layer) of the semiconductor. the „undisturbed‟ region (undisturbed by the presence of the metal) of the semiconductor behaves resistively as intended due to whatever doping values it was fabricated with. though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process, such an interface is practically characterised by a characteristic specific received january 23, 2017 corresponding author: anthony s. holland school of engineering, rmit university, melbourne, victoria, australia (e-mail: anthony.holland@rmit.edu.au) 314 a. s. holland, y. pan, m. s. n. alnassar, s. luong contact resistance (scr). the evolution of semiconductor devices required the lowering of values of this parameter for ohmic contacts and the investigation of test structures to determine these small values has been a significant and important area of research. error correction has been a major concern in regard to scr test structures and investigations by finite element modelling demonstrate that test structures utilising circular contacts can be more reliable than square shaped contacts which are impractical to realise for small geometries. circular designed contacts will remain as circles when fabricated and hence their area can be accurately determined. test structures with circular contacts can be realised with an equipotential always resulting at the contact circumference and mathematical solutions are obtainable. in this paper it is shown that the use of finite element modelling software nastran can be used effectively for designing and modelling ohmic contact test structures and that circular contact are efficient in minimising error in determining scr from such test structures. nastran software solves for heat flow and gives temperature contour distribution. it has been extensively used for solving problems for the analogous situation of electrical current flow and equipotential distribution. full semiconductor modelling software is expensive and for ohmic contact investigation is not required when the approach used is to investigate test structures considering the ohmic interface as purely resistive. more complex investigations that consider tunnelling probability and other aspects of charge transport across an interface will require software for full semiconductor physics solutions but this is not necessary when an experimentalist wants to determine the effect of this physics which is an interface‟s scr. there are two ways to look at the parameter specific contact resistance (represented by symbol c, [ω.cm 2 ]). first there is the rather academic or theoretical way of describing it as the inverse of the differential of current density versus voltage (j-v at the origin) for uniform current density, so that even a schottky contact has a scr value. there is much to be gained from this first approach in understanding the physics of current across a metalsemiconductor junction. semiconductor software tools are great for this first approach but not real test structures as it is difficult to isolate a contact so that it is the only entity determining a j-v curve and have uniform current density at the same time. however, this approach is worth pursuing with computer modelling (and actual test structures if possible) of appropriate test structures to demonstrate the physics in scr equations [1]. the second or the more practical investigation is to study scr in regard to practical ohmic contacts only so that the derivative of a contacts j-v curve is the same at the origin as it is at practical voltage values e.g. j-v being linear from -5v to +5v. this second approach need not consider the physics of current transfer but rather the effective resistance of a contact interface as it contributes to the total resistance of a source or drain contact of a mosfet for example. in practical ohmic contacts the depletion layer of the metal-semiconductor interface is relatively small and for active layers of a practical contact structure, each layerto-layer interface can be considered to have a unique scr value. having determined scr values for any layer-to-layer interface should enable accurate modelling of structures of any geometry involving such interfaces. so, the second approach is very much a „try and see‟; where the first enquiry is to determine if a particular contact interface is ohmic and if so what is its scr value and can this be used to determine the effective resistance of a contact of a particular area. the reverse is also used, where the effective resistance of a two-layer contact can be used to determine the scr of the interface using appropriate analytical expressions relating scr and contact resistance. although the authors are not aware of any report on using computer modelling in this reverse way, it should be possible to use computer circular test structures for determining the specific contact resistance of ohmic contacts 315 modelling in an iterative way to determine what scr realises a given (e.g. experimentally determined) contact resistance. the study of scr requires the use of test structures for measuring the voltage drop across the contact of interest and any parasitic resistance encountered. it is the parasitic resistance that causes most difficulty. another difficulty is the effect of contact area, unless the area is small enough that uniform current distribution can be assured, otherwise the concept of transfer length has to be considered. it is in regard to area that circular contacts have an advantage (compared to square contacts) in that even though a circular contact realised after fabrication may not have the same diameter as designed, it will still be a circle and its diameter and area can be accurately determined. square designs have the disadvantage of ending up having rounded corners. several test structures have been developed using this advantage of circular contact designs [2-5]. the circular transmission line model (ctlm) ohmic contact test structure [6] was developed not with this advantage of circular contacts always being circular but with the advantage that no mesa etch or active area isolation is required which is a significant advantage compared to linear transmission line model (tlm) ohmic contacts test structure‟s [7, 8]. the disadvantages include the active layer isolation process steps and active layer overlap of contacts where in theory there should be none. the cross kelvin resistor (ckr) test structure has the same disadvantages [9]. 2.ohmic contact characterisation ohmic contacts are fundamentally important: there are at least two contacts in every transistor and there are billions of transistors on the most complex semiconductor chips. ohmic contact research is crucial for the development of novel nanotechnology devices [1]. it is imperative to have low resistance contacts to these nanoscale devices. fundamental understanding of ohmic contact structures, materials properties and processing will result in better semiconductor devices performance and enhanced power efficiency. scr is an extremely important parameter for quantifying a metal to semiconductor ohmic contact. its theoretical description is defined as the reciprocal of the derivative of current density with respect to voltage at v = 0 [8] (equation 1). a good ohmic contact requires a negligible value of scr to ensure the linear i-v characteristic (between such two contacts) is mainly due to resistance of the semiconductor ( ) (1) note that equation (1) is the definition of scr which is a theoretical quantity referring to the metal-semiconductor interface only. in practice, a more meaningful definition of the scr for a real metal-semiconductor ohmic contact is an electrical parameter which is determined from measured contact resistance between a metal and a semiconductor. scr is a very useful term for characterising ohmic contacts because it is independent of contact area and is a convenient parameter when comparing contacts of various sizes. though in practice, an experimentalist or device process engineer will want to know how many ohms an ohmic contact presents to current flow, a design engineer can utilise known scr values to better design and model a contact considering contact layers, interfaces and geometry parameters are all known, including the scr of each interface. to ensure accurate 316 a. s. holland, y. pan, m. s. n. alnassar, s. luong semiconductor modelling, any scr determined experimentally and used in contact or device modelling should be in agreement with equation 1, if this is possible to demonstrate. ohmic contact characterisation is carried out by using test structures to investigate the electrical behaviour and a suite of materials analysis tools to investigate the materials which make up the ohmic contacts e.g. silicide (metal-silicon reaction product) layer. characterisation usually aims to attain the outcomes listed below for optimising contact properties. 1. use test structures to accurately quantify the resistance due to contact interfaces. this resistive property is qualified using scr and improved efficiency and speed in determining low scr values for ultra-small contacts is often a goal of particular research in this area. 2. understand the influence of mechanical, electrical and thermal materials parameters, in particular the influence of defects and stress formation at the contact interface, on scr values. 3. optimise test structures and demonstrate new ones to confirm a test structure‟s suitability for determining processing changes that contribute to reducing the scrs of metal-silicide-silicon contacts for example. 4. hybridisation of analytical calculations and numerical computations of ohmic contact architectures to model the electrical behaviour of fabricated test structures. item 4 above is an area that could be explored further. multilayer ohmic contact test structures will of course have an effective resistance to electrical current and the accurate determination of the resistance of such contact structures can be better realised if interfaces have their scr‟s included – other parameters being layer resistivities and geometries for ohmic contacts structures only. scr is a parameter that has been reduced by several orders of magnitude (due to the introduction of silicides for silicon contacts [17] for example) throughout the semiconductor era. reported values of scr for some ohmic contacts are listed in table 1. in the international technology roadmap for semiconductors (itrs) the scr values required for particular technology nodes have been given in many of its publications showing significant reduction in the required value as technology generations progress. in 2017 the target is in the low 10 -9 cm 2 range. determining the value of scr quantifies the interface for a particular processing technology and gives information about the quality of an ohmic contact fabrication process. it also allows for comparison of different two-layer ohmic contacts or for different device processes using the same two layers for contacts. hence, determining scr allows for optimisation of the process for forming an ohmic contact. determining accurate values of scr will aid in better modelling of contact structures, in order to minimise the contact resistance (rc). note that scr is the biggest contributor to rc for relatively small contacts. minimising rc in turn minimises the net resistance of a circuit, and its overall power consumption; these will result in more power efficient devices and circuits. unlike contact resistance rc, the scr value should not include contributions from the resistivity of the two contacting layers or topological effects due to the contact geometry design. if a reported value of scr does include these effects it is regarded as an effective scr for a particular contact (including geometry) and such a scr value cannot be used in designing and modelling other geometries with the same contact layers (and processing steps). the units of scr (cm 2 ) may be misleading to some researchers who have not specialised in this area. this parameter cannot be used directly to determine the resistance circular test structures for determining the specific contact resistance of ohmic contacts 317 contribution of the interface in a two-layer contact unless one is confident that the current is uniformly distributed in the contact interface. if current can be assumed to be distributed uniformly in the interface of a two-layer contact then for area a (cm 2 ) the resistance of the interface is simply ρc/a (). this assumption does not always hold (unless a is relatively small) because electrical current in most semiconductor devices (which are planar) has to turn 90 o into a contact, and so is not always uniformly distributed across a contact interface. for example, current can flow laterally under the gate region of a transistor and then turn upwards through the drain ohmic contact, similarly for a contact in a test structure. the distribution of current in the drain contact area is dependent on the value of ρc, but is also influenced by other parameters such as the resistivity of any silicide used, the interconnect material, and any liner used; and the geometry of these materials. intuitive understanding in this case can be misleading, and only rigorous analytical and numerical modelling will portray the actual current distribution. table 1 reported values of specific contact resistance (scr) for some ohmic contacts ohmic contact layers scr value ωcm 2 ref. al-si 1  10 -6 [11] al-wsix-si 3  10 -7 [12] al-tisi2-si 1  10 -8 [13] al-tisi2 4  10 -9 [5] nisi-si 5  10 -9 [14] nige-ge 2.3  10 -9 [15] tisix-si 1.3  10 -9 [16] 3. test structure modelling the main test structures used for characterising ohmic contacts and determining scr in particular are the transmission line model (or transfer length method) (tlm) [7,8], cross kelvin resistor [9], and the circular transmission line model [6]. more recent test structures are the multi-ring ctlm [15], refined tlm [16] and the two-circle electrode contacts [4]. one of the main issues with test structures based on the transmission line model is that they are essentially 2-d models and do not allow for vertical voltage drops. an estimate as to whether a 3d correction is applicable to a contact can be made by calculating the parameter  where =c/b .t and b is the resistivity of the semiconductor layer. this parameter was first used by berger [8] to estimate the influence of semiconductor depth and resistivity on the derivation of c using transmission line model test structures. the parameter gives an indication of the ratio of the voltage drop across the contact interface to the voltage drop in the vertical direction occurring in the semiconductor material beneath the contact. when <1, 3d effects are significant as the voltage drop in the vertical direction in the semiconductor layer is nominally greater than the voltage drop across the contact interface (scr = c.) when >1 and increasing, the voltage drop in the vertical direction is becoming less important (the contribution of this vertical voltage drop compared to the measured values becomes less significant) and 2d modelling will be sufficiently accurate. calculation of  requires some knowledge of c; however an initial upper figure for  can be found using c determined from a 2d correction. 318 a. s. holland, y. pan, m. s. n. alnassar, s. luong this will give an indication of whether a 3d correction may be applicable. if <1 and the corrections are made using 2d data, then significant errors can be introduced (overestimation) in the derivation of c [18]. by using finite element analysis we can optimise the use of material and geometries of interconnect to minimise ohmic contact and interconnect via resistance [18]. the electrical equation used to describe d.c. electrical conduction (equation. 2) is analogous to that for thermal conduction (equation 3) (2) where j = electrical current density, v = voltage, n = spatial coordinate in the direction of current flow and = material electrical conductivity (3) where h = heat flux, t = temperature, n = spatial coordinate in the direction of heat flow, and k = material thermal conductivity equations 2 and 3 have the same form and therefore can be solved using the same finite element program. nastran is a finite element program developed by nasa for heat transfer analysis (and mechanical structural analysis). nathan et al. [19] reported on the use of this program for electrical analysis based on the analogy indicated by equations 2 and 3. nastran has been used by the authors to design and model various ohmic contacts test structures as well as interconnect vias [20] as shown in figure 1. figures 2 (a) and (b) show an example of modeling a ckr test structure using nastran. in figure 2(b) the metal layer has been lifted up to show the equipotentials. the contact layers are typically separated by a thin oxide layer with the contact opening. vb is the value of the equipotential of the voltage tap of the (top) metal layer of the contact. the voltage measured on the tap (va) is used to determine the average voltage at the bottom of the contact interface. figure 3 shows an ideal ckr ohmic contact test structure. it can easily be appreciated that such a test structure is not possible to realise, and contact widths smaller than the current and voltage arms are required. (stavitski et al give an excellent report on using ckr test structures in [21]).this leads to parasitic error which can be studied using software such as nastran. figure 4 shows a possible test structure for fast turnaround in ckr measurements using the technique described in [5]. again, the software nastran can be readily used to model such a test structure. the circular contacts used can be as small as possible as long as their diameters can be measured. this contrasts with square contacts which will most likely have rounded corners (figure 5). extrapolation of scr‟ (scr plus parasitic resistance effect) for small contacts where the effective scr‟ is determined for each d/w value using scr‟=(va – vb) x area, gives the actual scr, as shown in [5]. again the use of circular contacts is more reliable as contact area can be reliably determined using measured diameters. the series of ckr test structures demonstrated in figure 4 utilises the technique of the ckr and the accuracy of determining area of circular contacts. the benefits of the series of ckr of figure 4 is that as the contact becomes infinitely small then the contact resistance will dominate the ckr resistance measurement. the possible problems with tlm test structures can be demonstrated using nastran modelling. figure 6 shows the effect of vertical voltage drop in the semiconductor layer which occurs when the semiconductor resistance (due to semiconductor resistivity and circular test structures for determining the specific contact resistance of ohmic contacts 319 thickness) below the contact is comparable to that due to the contact interface (scr effect). investigation shows the relevance of the parameter  [17]. in fig 6(a) there is the effect of horizontal and vertical voltage drop and in fig 6(b) the semiconductor has only the horizontal resistance effect of sheet resistance and the tlm equations can be reliably applied. figure 7 shows a schematic with the inclusion of this tlm contact section in a test structure and the effect is to increase the value of rc determined. similar error contributions occur for the ckr test structure [10]. fig. 1 example of equipotential distribution in an interconnect via (for input current i) determined using nastran finite element modeler. ρc1 is the specific contact resistance between metal1 and the via liner material [7]. (a) (b) fig. 2 (a) example of equipotentials in a cross kelvin resistor test structure for ohmic contact characterisation of a semiconductor layer (bottom layer) to a metal layer contact. the distribution of quipotentials in the semiconductor layers current input arm and the voltage (va) tap are more clearly shown in (b). the metal layer is shown as having one equipotential (vb) for the scale used. (modelled using nastran). 320 a. s. holland, y. pan, m. s. n. alnassar, s. luong fig. 3 ideal ckr test structure, where the square contact area has the same width as the four arms. i i v1a v1b v2b v2a v3a v3b width, w contac t diameter, d d/w=0.1 d/w=0.2 d/w=0.3 scr’ scr’ fig. 4 (a) schematic of a chain of ckr test structures with varying contact sizes to determine scr and quick electrical testing. v1a etc. are voltages measured on the respective ckr taps. (b) expected and observed trend for scr‟ determined for varying ckr contact geometry. the actual value of scr is obtained by extrapolating to d/w = 0. d is the contact diameter and w is the ckr arm width. (a) (b) circular test structures for determining the specific contact resistance of ohmic contacts 321 fig. 5 possible effects of fabrication steps in reducing designed area of contacts of circular and square shapes. (a) (b) fig. 6 examples of equipotentials (volts) distribution for tlm models of metal to semiconductor contacts. in (a) the structure has <1 and (b) has >1,  being the parameter introduced by berger [17] to quantify the effect of semiconductor layer resistivity on tlm resistance measurements. fig. 7 (a) schematic of tlm test structure for determining contact resistance (rc) by measuring resistance between two contacts. (b) shows shows the equipotential distribution where the vertical voltage drop is significant as indicated by the curvature of the equipotentials. the tlm test structure does not include this contribution and measurements will. hence error results when the measured rc is used to determine the scr of the contact. (c) plan view of tlm test structure. (i is input current, rsh is sheet resistance, l is distance between contacts, w is width of active layer). 322 a. s. holland, y. pan, m. s. n. alnassar, s. luong 4. 2d circular specific contact resistance test structure the circular transmission line model (ctlm) test structure can be demonstrated using nastran finite element modelling. this test structure completely eliminates alignment error (as there is no alignment) and error is mainly due to the any inaccuracy in sheet resistance and like the tlm and ckr, error due to finite resistivity of the semiconductor layer can cause significant voltage drop in the semiconductor layer under the contact. yue et al [4] reported a technique using the ctlm test structure shown in figure 8 (a) and figure 9. the outer radius r1‟ is regarded as infinite in figure 9. here we will call this test structure the yue2d. it consists of three electrode discs and resistance measurement from these can relatively easily give semiconductor sheet resistance and scr. the main error that can occur in the yue-2d will be due to the  factor [17]. figure 8 (b)-(d) show images from examples of nastran finite modelling of the yue-2d test structure. the perfect symmetry of each electrode means that only a small „wedge‟ of each of the three electrodes (of fig. 9) needs to be modelled. the equipotentials shown in the semiconductor layer of figure 8(d) are similar to those in figure 6(b) where the vertical arrangement of the equipotentials indicates that there is little voltage drop in the vertical direction and hence accurate determination of sheet fig. 8 (a) schematic of circular transmission line model (ctlm) test structure using two electrodes, for determining contact resistance (rc) and scr, (b) finite element mesh used to model representative section of ctlm, (c) nastran model result showing equipotential distribution for two electrode ctlm and (d) section of ctlm showing equipotentials in semiconductor layer. circular test structures for determining the specific contact resistance of ohmic contacts 323 resistance and scr should ensue. again, an advantage of the circular electrodes is that accurate contact geometry can be measured (the fabricated contacts will be circular) and the actual radii can be used in calculations to determine contact parameters. extremely small contacts can also be realised when the value of scr is small and appropriate geometry is described in [4] for this. such a test structure with extremely small contacts will require more than one metal layer [22] in order to connect a probe to the electrode. fig. 9 schematic of the yue-2d test structure for determining semiconductor layer sheet resistance and scr of metal to semiconductor interface [4]. 5. 3d circular specific contact resistance test structure the scr of metals contacts to bulk semiconductor material is not usually reported, as the main interest for the semiconductor industry is in determining and reducing scr to shallow active layers. however the authors consider the test structure shown in figure 10 which shall hereafter be called the yue-3d, to give the most reliable measurements [3]. however, unlike the test structures reported previously in this paper, there is no analytical solution available relating resistance measurements and scr. solutions have to be obtained by computer modelling and resistance measurements plotted as a function of varying semiconductor resistivity, scr and the two radii (see figure 11). unlike the yue2d, the yue-3d only needs one resistance measurement (from one pair of electrodes). because of its accuracy, this test structure would be very suitable for studies of scr where a series of substrates are available with varying resistivity and for investigating the effects of surface treatments on varying scr. the yue-3d can be used for investigating ohmic contacts to bulk semiconductors where the semiconductor has uniform resistivity to a depth of several times the inner radius (r1) of the outer electrode shown in figure 10(a). as in the yue-2d, the outer radius r1‟ can be infinite [2]. a scaling equation can be applied to this test structure similar to that reported by loh et al. [23] for ckr test structures. 2 0 1 2 0 1 2( , , , , ) ( , , , , )t b c t b cr mr mr mr mn m n nr r r r    (2) 324 a. s. holland, y. pan, m. s. n. alnassar, s. luong fig. 10 (a) schematic of the yue-3d test structure for determining scr of a metal to semiconductor contact interface for bulk semiconductor [3], (b) example of equipotential distribution in a section of the yue-3d test structure obtained from fem modeling using nastran. fig. 11 example of fem (nastran) analysis results for total resistance rt between two electrodes (fig. 10) as a function of scr (ρc) with resistivity ρb varying from 0.001 ω·cm -to0.01 ω·cm. geometry is fixed; r0 = 3 μm, r1 = 5 μm, and r2 = 9 μm. note that this figure can be scaled using (3). [2] circular test structures for determining the specific contact resistance of ohmic contacts 325 6. conclusion this paper has reviewed ohmic contact test structures investigated by the authors for ohmic contact characterisation between a metal and semiconductor in both two dimensional (2-d) and three-dimensional (3-d) circumstances using these test structures. the issues with regards to error correction, difficulty in analysing results and difficulty in fabrication, lead to the development of test structures with circular electrodes. these issues are (i) active layer definition, (ii) contact misalignment and overlap, (iii) equipotential problem, (iv) complicated analytical expressions and (v) vertical voltage drop. when the semiconductor layer in a metal-to-semiconductor contact is neither true 2-d nor true 3-d, there will always be some error, and error correction is required. for the test structure presented here, accurate results can be always determined when semiconductor layer can be regarded as truly 2-d or 3-d. in summary, all of the above issues with conventional test structures have been addressed and improved by the novel test structures (yue-2d and yue3d) developed for ohmic contact characterisation in both 2-d and 3-d circumstances. the corresponding methods for determining scr have also been presented and demonstrated using finite element modeling (fem). because of the resistance only effect of ohmic contacts, a full semiconductor physics modelling program is not required. commercially available fem software for static thermal analysis, such as nastran can be used for ohmic contact test structure investigation considering the analogous equations for heat and electric current flow. the yue-2d set of three two-contact circular test structures does not require mesa isolation and correction factors are unnecessary. furthermore, the analytical expressions are relatively simple compared to the conventional ctlm test structure. a 3d test structure (yue-3d) was demonstrated that should be most accurate in determining specific contact resistance. references [1] hiep n. tran, tuan a. bui, aaron m. collins, and anthony s. holland, “consideration of the effect of barrier height on the variation of specific contact resistance with temperature”, ieee trans. electron devices, vol. 64, no. 1, pp. 325, 2017. [2] a. m. collins, y. pan, a. s. holland, “using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors”, facta universitatis, series electronics and energetics, vol. 28, no. 3, pp. 457 – 464, september 2015. [3] y. pan, a. m. collins and a. s. holland, "determining specific contact resistivity to bulk semiconductor using a two-contact circular test structure", in proceedings of the ieee international conference on miel, may 2014, pp. 257-260 [4] y. pan, g. k. reeves, p. w. leech, and a. s. holland, “analytical and finite-element modeling of a twocontact circular test structure for specific contact resistivity,” ieee trans. electron devices, vol. 60, no. 3, pp. 1202–1207, mar. 2013. [5] a. s. holland, g. k. reeves, "new challenges to the modelling and electrical characterisation of ohmic contacts for ulsi devices", microelectronics reliability, vol. 40, pp. 965-971, 2000. [6] g. k. reeves, “specific contact resistance using a circular transmission line model,” solid state electron., vol. 23, no. 5, pp. 487–490, may 1980. [7] w. shockley, “research and investigation of inverse epitaxial uhf power transistors”, air force atomic laboratory, wright-patterson air force base, rep. no. al-tdr-64-207, sept. 1964. [8] h. berger, “models for contacts to planar devices,” solid state electronics, vol. 15, pp. 145-158, 1972. [9] s. j. proctor and l. w. linholm, ieee electron device lett., edl-3 (10) 294 (1982). [10] c. y. chang, y. k. fang, and s. m. sze, “specific contact resistance of metal-semiconductor barriers,” solid-state electron., vol. 14, no. 7, pp. 541–550, jul. 1971. 326 a. s. holland, y. pan, m. s. n. alnassar, s. luong [11] g. srinivasan, m. f. bain, s. bhattacharyya, p. baine, b. m. armstrong, h.s. gamble, d. w. mcneill, mat. sci. eng. b, 114-115, pp.223-227, 2004. [12] m. finetti, s. guerri, p. negrini, a. scorzoni, and i. suni, thin solid films, vol. 130, no. 37, 1985. [13] majumdar et al, “stlm: a sidewall tlm structure for accurate extraction of ultralow specific contact resistivity”, ieee trans. electron devices, vol. 34, no. 9, september 2013. [14] miyoshi et al, “in-situ contact formation for ultra-low contact resistance nige using carrier activation enhancement (cae) techniques for ge cmos”, in digest of technical papers symposium on vlsi technology, 2014. [15] yu et al, “titanium silicide on si:p with precontact amorphization implantation treatment: contact resistivity approaching 1 × 10−9 ohm-cm2”, ieee trans. electron devices, vol. 63, no.12, september 2016. [16] r. dormaier and s. e. mohney, “factors controlling the resistance of ohmic contacts to n-ingaas,” j. vac. sci. technol. b, vol. 30, no. 3, pp. 031209-1–031209-10, may/jun. 2012. [17] n. stavitski, m. h. van dal, a. lauwers, c. vrancken, a. y. kovalgin, and r. m. wolters, “evaluation of transmission line model structures for silicide-to-silicon specific contact resistance extraction,” ieee trans. electron devices, vol. 55, no. 5, pp. 1170–1176, may 2008. [18] holland a. s. and reeves g.k., “new challenges to the modelling and electrical characterisation of ohmic contacts for ulsi devices", in proc. of the miel 2000 conference, vol. 2, pp.461-464, nis, may 2000. [19] m. nathan, s. purushothaman and r. dobrowolski, “geometrical effects in contact resistance measurements: finite element modelling and experimental results”, j. appl. phys., vol. 53, no. 8, pp. 5776-5782, august 1982, [20] anthony s. holland, geoffrey k. reeves, patrick w. leech, “finite element modelling of misalignment in interconnect vias”, pp. 307-310, commad, brisbane 2004. [21] n. stavitski, j. h. klootwijk, h. w. van zeijl, a. y. kovalgin, and r. a. m. wolters, “cross-bridge kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization,” ieee trans. semicond. manuf., vol. 22, no. 1, pp. 146–152, feb. 2009. [22] phd thesis, “versatile circular test structure for ohmic contact characterisation” dr pan yue, rmit university 2015. [23] w. m. loh, s. e. swirhun, t. a. schreyer, r. m. swanson, and k. c. saraswat, “analysis and scaling of kelvin resistors for extraction of specific contact resistivity,” ieee electron device lett., vol. edl-6, pp. 105–108, mar. 1985. instruction facta universitatis series: electronics and energetics vol. 31, no 3, september 2018, pp. 487-500 https://doi.org/10.2298/fuee1803487a electromagnetic analysis of single/multiple grounding rods * vesna arnautovski-toseva, leonid grcev university ss cyril and methodius university, faculty of electrical engineering and information technologies, skopje, macedonia abstract. this paper presents electromagnetic modeling of multiple driven grounding rods in homogeneous/two-layer soil. the mathematical model is formulated by mixed potential integral equation (mpie) on the basis of sommerfield integrals. several configurations of multiple driven rods located in homogeneous or two-layer soil are analyzed. the authors are focused on the calculation of the current density along the rods in wide frequency range from 100hz to 1mhz. key words: electromagnetic theory, grounding rod, high frequencies, homogeneous soil, two-layer soil. 1. introduction ground rods are simplest and the most often used means used for earth termination of different electrical systems, providing a conducting connection, whether intentional or accidental between an electrical circuit or equipment and the earth. their behavior at dc (50 or 60 hz) is well understood [3-4], but their high-frequency (hf) and transient performance is also of interest in different fields, such as, lightning protection, power and telecommunication systems, power system transients, electromagnetic compatibility, etc. the safety criteria based on “a minimum rise in the potential” are taken from the power systems analysis. in such cases the usual dc approximation leads to rather straightforward computations. the simulation studies show that grounding systems, even the simplest ones, behave quite differently at low and high frequencies [5]. the survey of the literature shows that high frequency analysis of grounding systems is realized by using lumped circuit equivalents [6-7], quasi-static method of images [8-9], rigorous electromagnetic model received february 19, 2018; received in revised form may 24, 2018 corresponding author: vesna arnautovski-toseva faculty of electrical engineering and information technologies, skopje, macedonia (e-mail: atvesna@feit.ukim.edu.mk) *an earlier version of this paper was presented at the 13th international conference on applied electromagnetics (пес 2017), august 31 september 01, 2017, in niš, serbia [1] 488 v. arnautovski-toseva, l. grcev [10-11], or hybrid approaches [12-13]. however, there is a lack of papers that threat the problem of multiple driven rods at high frequencies, except at dc [3]. our objective in this paper is to give sight into the problem of high frequency performance of multiple driven ground rods in homogeneous or two-layer soil with respect to the case of a single rod. the main interest is the current density along the rods of various configurations for which the dc behavior is known [4]. preliminary results of authors’ research in this field are presented in [1]. the authors have recently presented similar analysis of a single rod at high frequencies [2]. 2. electromagnetic model the rigorous treatment of the air/two-layer soil interfaces in electromagnetic models is based on the exact solution for the field of a hertz dipole near a conducting half space/two-layer soil. this approach involves green’s functions formulated by sommefeld integrals that need numerical integration. this model is confirmed as theoretically most accurate since it is based on minimum approximations. the detailed description of the mathematical model is given in our previous work [10, 11, 15]. in this analysis the electromagnetic model is extended to take into account multiple rods geometry and the corresponding excitations. 2.1. geometry of the problem in fig. 1 we consider grounding system consisting of k identical parallel rods, each of length l and radius a penetrating homogeneous/two-layer soil. the upper layer (medium 1) is of finite depth d characterized by permittivity ε1, permeability μ0 and resistivity 1. when the soil is homogeneous it is assumed that d . in the case of two-layer soil, the bottom layer (medium 2) is characterized by permittivity ε2, permeability μ0 and resistivity 2. the air (medium 0) is characterized by permittivity ε0 and permeability μ0. corresponding rod(s) lengths in the upper/bottom layer are l1 and l2 respectively. in the case of homogeneous soil l2=0. fig. 1 geometry of multiple rods in two-layer soil electromagnetic analysis of single/multiple grounding rods 489 2.2. mathematical model grounding rod may be considered in a circuit with an ideal harmonic current source of magnitude is with one terminal connected to the ground electrodes and the other terminal to the remote earth theoretically at infinite distance. the influence of the connecting leads is ignored. multiple rods excitation is assumed by using respectively k harmonic current sources of equal magnitude is, leading to total excitation current of kis. fig. 2 approximation of the current with triangle dipoles following thin-wire approximation, the physical model of the system of ground rods is based on fictitious segmentation into n+1 straight tubular segments, fig. 2. the segmentation is done in a way so that no segment penetrates through the boundary between the two soil layers. to solve current distribution along each rod the method of moments is applied by using thin wire approximation [10]. following galerkin formulation the current distribution in the system of rods is approximated by n overlapped triangular dipoles, each extended over two neighboring segments i = li-1 + li (i=2, 3, ... , n+1). one of the triangular dipoles passes through the interface between the two soil layers with its top point located just at the interface between the two soil layers (z = d). the total excitation current kis is approximated by k additional triangular monopoles sk with length k = lk, each of magnitude is, that are positioned at the top of each rod. the weighting functions are also triangular dipoles. the following matrix equation yields the current distribution along the grounding rods 1 2 1 2 1 2 1 1 111 12 1 1 2 2 221 22 2 2 1 2 k k k s s s s s sn s s s s s sn n n nn n ns s ns s ns s z i z i z iz z z i z i z i z iz z z i z z z i z i z i z i                                        , (1) where matrix column [i] contains the coefficients in of unknown currents; [z] is generalized impedance matrix related to self and mutual impedances between all triangular dipoles that represent all electromagnetic influences between all rods in the 490 v. arnautovski-toseva, l. grcev configuration; [zsis] is excitation matrix where the corresponding multiple rods excitations and their influences are taken into account. once the currents in the dipoles are computed, the current density along each rod in the configuration is easily estimated 1i i i i i i i l     . (2) the elements zij and the elements kjsz correspond to mutual impedances between the source dipole i and observation dipole j (i, j=1, 2, ... , n); and respectively between the source dipole i (i=1, 2, ... , n) and each of the k excitation monopoles sk as following 1 1 k k k ij ij zj i i j is is zs i i k u z e dz i i u z e dz i i         . (3) here ezj is tangential electric field at the surface of the observation dipole j over the length of a dipole segment lj due to current ii in the dipole i. in this analysis, mpie formulation for the electric field is used z z ze j a v   , (4) 1 i z azz i z vz i i di a g i dz v g q dz q j dz       . (5) in (5) gazz is z-component of the dyadic green's function for the magnetic vector potential at observation point (x,y,z) due to a hertzian vertical electric dipole (ved) of unit strength at source point (x',y',z'). respectively, gvz is the corresponding scalar potential green's function due to a single point charge associated with ved [14]. the exact formulation of spatial domain green’s functions are formulated by sommerfeld integrals that are solved by direct numerical integration  , , 0 0 , 0 1 1 ( ) ( ) 2 2 mn mn mn azz vz azz vz azz vzg g k j k k dk s g         . (6) where j0(k) is zero-order bessel function of the first kind. the corresponding spectral domain green’s functions for the magnetic vector potential are given below [15] electromagnetic analysis of single/multiple grounding rods 491 1 1 1 2 1 1 2 1 1 2 ( ) ( )11 0 1 ( ) ( ) ( )12 0 12 10 1 ( ) ( ) ( )21 0 21 10 2 22 0 2 e 2 e e e 2 e 2 e 2 z z z z z z z z z z jk z z jk z z jk z z azz z jk z d jk d z jk d z azz z jk z d jk d z jk d z azz z jk azz z g ae be j k g t m r j k g mt e r e j k g j k                                         21 ( 2 )2 12 10( ) zz z z jk z z djk d m r r e e          . (7) 1 1 1 1 1 1 1 ( ) ( ) ( ) 12 10 (2 ) 10 12 1 2 12 10 ( ) ( ) 1 jkz d z jkz d z jkz d z jkz z jkz z jkz d z jk d a e r e r e m b e r e r e m m r r e                         . (8) in above relations, r21, r10, t21 and t10 are reflection and transmission coefficients of a tm wave incident on both interfaces between mediums 11 2 0 1 02 1 21 10 12 21 1 2 12 1 0 1 0 1 2 21 12 21 1 22 1 2 2 2 2 2 0 0 0 0 2 1 ( ) , 1,2 z zz z z z z z z z z i zi i i i k kk k r r r r k k k k k t t t k k j k k k k k i                                 . (9) the corresponding spectral expressions for the scalar potential green's functions are derived by using the following relation 2 2 1 mn mn azz v zm g g z zk     . (10) 3. numerical results in this section frequency domain behavior of single/multiple grounding rods located in homogeneous/two-layer soil is analyzed. three grounding test configurations are assumed as shown in fig. 3; single rod (r1), 5-rods configuration (r5), and 9-rods configuration (r9). the geometry of each rod is identical, characterized by length 10m (extending from 0.05m to 10.05m) and radius 0.01m. the outer dimensions of the “mesh” of r5 and r9 configurations are: a) 20m20m, (r5a and r9a); and b) 10m10m (r5b and r9b) as given in [3]. the main objective of this analysis is to compare the behavior of the given grounding multiple rod structures at high frequencies with respect to the corresponding dc results. 492 v. arnautovski-toseva, l. grcev fig. 3 test configurations: single rod (r1) and multiple rods (r5) and (r9) in the case of two-layer soil the permittivity of both layers is 1 = 2 = 100. the resistivity of the upper layer with depth d=5m is fixed at 1=100ωm, while the bottom layer resistivity is: 2=33.33ωm (reflection factor k=0.5), and 2=300ωm (reflection factor k=+0.5). the homogeneous soil corresponds to reflection factor k=0. the total excitation current in the corresponding analysis is k1ka, i.e. the excitation current applied to each rod is 1ka. 3.1. homogeneous soil in this section, all test configurations are analyzed in homogeneous soil. the main objective is to investigate the influence of the number of multiple rods in r5 and r9 configurations, as well as how their mutual distance affects the current distribution. as a result, current density along the central rod and outer/corner rods is compared to the corresponding results obtained for single rod r1. the analysis is preformed in frequency range from 100hz to 1mhz. in fig. 4 it may be observed respectively the current density along the central and the outer/central rods of: a) r5a and r5b configurations, and b) r9a and r9b configurations at 100hz with respect to single rod r1 behavior. as it may be observed, the current density along r1 is generally uniform except at the bottom end of the rod where much higher current density is observed. the results show that in multiple rods configurations (r5 and r9) the current density in the central rod is lower in the upper part, and higher in the bottom part of the rod as compared to the outer/corner rods. this effect is emphasized with smaller distance between the rods and with larger number of rods in the grounding configuration (r9b). the results are in good accordance with the reference results obtained at dc [3]. in fig. 5 a) and b) it may be observed current density in the specific rods of r5 and r9 configurations respectively at 100khz. again, the injected current is almost uniformly discharged along each rod, i.e. the grounding system performance is quasi-static up to 100khz. the differences in the current density in outer/corner rods are lower as compared to single rod. next, in fig. 6 it is shown the current density along the central and outer/corner rods of r5 and r9 configurations obtained at 1mhz with respect to single rod r1. the results show that each rod of r5 and r9 configurations acts as isolated rod, since the current density along each rod is identical and equal to the corresponding single rod behavior. as it may be observed, most of the injected current is discharged from the upper part of the rod. the results show that the distance between the rods has reduced influence on the current density at higher frequencies. summarizing the results obtained for the analyzed configurations it may be expected that in the case when the distance between the rods is smaller higher differences in the current single rod r1 central corner side r9 central corner r5 20 (10) m 2 0 ( 1 0 ) m electromagnetic analysis of single/multiple grounding rods 493 densities would arise between the central rod and the outer rods. also it may be assumed that such differences would decrease at higher frequencies it can be assumed that the differences will be reduced so that the results will converge with those given in fig. 6. 0 2 4 6 8 10 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 rod length (m) c u rr e n t d e n s it y (k a /m ) a) current density along r1, r5a and r5b at 100hz r1 central rod of r5a corner rod of r5a central rod of r5b corner rod of r5b 0 2 4 6 8 10 0.08 0.1 0.12 0.14 0.16 0.18 0.2 b) current density along r1, r9a and r9b at 100hz rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b fig. 4 current densities along r1, r5 and r9 in homogeneous soil at 100hz 494 v. arnautovski-toseva, l. grcev 0 2 4 6 8 10 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 a) current density along r1, r5a and r5b at 100khz rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r5a corner rod of r5a central rod of r5b corner rod of r5b 0 2 4 6 8 10 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 b) current density along r1, r9a and r9b at 100khz rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b fig. 5 current densities along r1, r5 and r9 in homogeneous soil at 100khz electromagnetic analysis of single/multiple grounding rods 495 0 2 4 6 8 10 0.05 0.1 0.15 0.2 0.25 0.3 current density along r1, r5 and r9 at 1mhz for k=0 rod length (m) c u rr e n t d e n s it y (a /m ) r1 central rod of r5b corner rod of r5b central rod of r9b side rod of r9b corner rod of r9b fig. 6 current densities along r1, r5 and r9 in homogeneous soil at 1mhz 3.2. two-layer soil in this section, the analysis is focused on r9 configuration since highest variations in the current density are observed in the central rod with respect to the outer/corner rods or single rod case, as observed in previous section. as may be seen in fig.7 a) k=+0.5 and b) k=0.5 respectively, significant differences in the current density along ground rods are observed at 100hz. the current density is much higher in the partition of the rod located in the lower resistivity layer. also, current density is practically uniform along the rod partition located in one layer. this result is in accordance with the rod dc behavior, when the injected current is practically uniformly discharged in the surrounding soil [3]. however, the differences in current density between the upper and the bottom partition of the rod lead to large jump that occur at the interface between both soil layers (at depth d). when k=+0.5, the current density along the central rod is lower along the upper rod partition, but much higher at the bottom rod partition as compared to the outer/single rod. however for k=0.5, such differences in the current density are much less observed. in fig. 8, the corresponding results obtained at 100khz are shown. the results are generally similar with those shown in fig. 7. however, higher deviations, expressed by small peaks, lead to larger discontinuity in the current density that occurs at the interface between both soil layers. 496 v. arnautovski-toseva, l. grcev 0 2 4 6 8 10 0.04 0.06 0.08 0.1 0.12 0.14 0.16 a) current density along r1, r9a and r9b at 100hz for k=+0.5 rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b 0 2 4 6 8 10 0.05 0.1 0.15 0.2 0.25 b) current density along r1, r9a and r9b at 100hz for k=-0.5 rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b fig. 7 current densities along r1, r9a and r9b in two-layer soil at 100hz electromagnetic analysis of single/multiple grounding rods 497 0 2 4 6 8 10 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 a) current density along r1, r9a and r9b at 100khz for k=+0.5 rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b 0 2 4 6 8 10 0 0.05 0.1 0.15 0.2 0.25 b) current density along r1, r9a and r9b at 100khz for k=-0.5 rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b fig. 8 current densities along r1, r9a and r9b in two-layer soil at 100khz 498 v. arnautovski-toseva, l. grcev as may be observed in fig. 9 and in fig. 10, the current density obtained at high frequencies, 1mhz and 10mhz respectively, differs significantly from the corresponding low frequency, quasi-static, behavior. 0 2 4 6 8 10 0 0.05 0.1 0.15 0.2 0.25 a) current density along r1, r9a and r9b at 1mhz for k=+0.5 rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b 0 2 4 6 8 10 0.05 0.1 0.15 0.2 0.25 0.3 b) current density along r1, r9a and r9b at 1mhz for k=-0.5 rod length (m) c u rr e n t d e n s it y (k a /m ) r1 central rod of r9a side rod of r9a corner rod of r9a central rod of r9b side rod of r9b corner rod of r9b fig. 9 current densities along r1, r9a and r9b in two-layer soil at 1mhz electromagnetic analysis of single/multiple grounding rods 499 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 current density along r1 and r9 at 10 mhz rod length (m) c u rr e n t d e n s it y (k a /m ) r1 k=0 r1 k=+0.5 r1 k=-0.5 central rod of r9b k=0 central rod of r9b k=+0.5 central rod of r9b k=-0.5 side rod of r9b k=0 side rod of r9b k=+0.5 side rod of r9b k=-0.5 corner rod of r9b k=0 corner rod of r9b k=+0.5 corner rod of r9b k=-0.5 fig. 10 current densities along r1, r9a and r9b in two-layer soil at 10mhz at high frequencies the influence of the number of multiple rods and their mutual distance is practically negligible. the differences in the current density are mainly due to the two-layer soil parameters. at 1mhz, the jump in the current density that occurs between the upper and the bottom rod partitions is especially high when the bottom layer is less resistive. in this case, due to high resistivity of the upper layer, most of the injected current is discharged from the bottom part of the rod surrounded by less resistive bottom layer. however, as the frequency increases this effect vanishes. as may be seen in fig. 10, the results obtained at 10mhz for all rods in r9b configuration converge to the corresponding behavior of a single rod (r1). at high frequencies above 1mhz, practically, the behavior of the grounding multiple rods is not affected by the number of rods in the configuration or by the distance between the rods, since each rod in the configuration acts as isolated rod in homogeneous soil. here also, the bottom layer and the corresponding reflection factor has almost no influence on the current density since all injected current is quickly discharged from the upper part of each rod into the upper soil layer. it may be expected that when the distance between the rods is smaller, higher differences in the current densities would arise at low frequencies together with higher discontinuities at the interface between the two soil layers. again, it may be expected that such differences would decrease at higher frequencies leading to results similar as given in fig. 10. 500 v. arnautovski-toseva, l. grcev 4. conclusion in this paper, the frequency domain behavior of single/multiple grounding rods in homogeneous/two-layer soil is analyzed. the results for the current density obtained for various multiple rods configurations show that grounding rods performance at high frequencies differs significantly from their low frequency performance. in case of homogeneous soil, the current in the central rod varies from the corresponding distribution in the outer/corner rods. at higher frequencies, this effect vanishes, i.e. at 1mhz the current density for all test cases converge to the distribution obtained for single rod. in case of twolayer soil, current density along the upper and the bottom rod partitions differs significantly and lead to large jump in the current distribution that occurs at the interface between the both soil layers. this effect is noticeable at higher frequencies also, while the influence of other parameters such as the number of rods and their distances are negligible. at very high frequencies as 10mhz, the effect of the two distinct soil layers also vanishes. the results obtained for rods all test configurations show that their performance is identical to the corresponding case of single rod in homogeneous soil. in the future work the authors will analyze in more details the influence of the multiple rods geometry on the current density and will extend their analysis to h grounding impedance. references [1] v. arnautovski-toseva, l. grcev and s. cundeva, "high frequency behaviour of ground rods", in proc. of the 13th international conference on applied electromagnetics, nis, serbia, august 30 sep. 01, 2017, pp. 1–4. [2] v. arnautovski-toseva, l. grcev and k. el khamlichi drissi, "high frequency performance of ground rod", in proc. of the 17th ieee international conference on smart technologies, ohrid, macedonia, 6–8 july 2017, pp. 914–918. [3] f. dawalibi, d. mukhedekar, "influence of ground rods on grounding grids", ieee trans. power app. syst, vol. 98, pp. 2089–2097, 1979. [4] j. m. nahman, "digital calculation of earthing systems in nonuniform soil", arch. elektrotech., vol. 62, pp. 19–24, 1980. [5] r. g. olsen, m. c. willis, "a comparison of exact and quasi-static methods for evaluating grounding systems at high frequencies", ieee trans. power del., vol. 11, pp. 1071–1081, 1996. [6] c. t. mata, m. i. fernandez, v. a. rakov, m. a. uman, "emtp modeling of a triggered-lightning strike to the phase conductor of an overhead distribution line", ieee trans. power del., vol. 15, pp. 1175–1181, 2000. [7] l. grcev, m. popov, "on high frequency circuit equivalents of a vertical ground rod", ieee trans. power del., pp. 15981603, 2005. [8] t. takashima, t. nakae, r. ishibashi, "high frequency characteristics of impedances to ground and field distributions of ground electrodes", ieee trans. power app. syst, vol. 100, pp. 18931900, 1980. [9] s. bourg, b. sacepe et al., "deep earth electrodes in highly resistive ground: frequency behaviour”, in proc. of the ieee int. symp. on electromagnetic compatibility, atlanta ga, usa, 14-18 aug. 1995, pp. 584 –589. [10] l. grcev, f. dawalibi, "an electromagnetic model for transients in grounding systems", ieee trans. power del., no. 4, pp. 17731781, 1990. [11] l. grcev, v. arnautovski-toseva, "grounding systems modeling for high frequencies and transients: some fundamental considerations", in proc. ieee bologna power tech. bologna, italy, june 23-26, 2003. [12] a. f. otero, j. cidras, j. l. del alamo, "frequency-dependent grounding system calculation by means of a conventional nodal analysis technique", ieee trans. power del., vol. 14, pp. 873–878, 1999. [13] z-x li, w. chen, j-b fan, j. lu, "a novel mathematical modeling of grounding system buried in multilayer earth", ieee trans. power del., vol. 21, pp.1267–1272, 2006. [14] g. dural, m. i. aksun, "closed-form green's functions for general sources and stratified media", ieee trans. microwave theory techn., vol. 43, july 1995, pp. 1545-1552. [15] v. arnautovski-toseva, l. grcev, "image and exact models of a vertical wire penetrating a twolayered earth", ieee trans. on electromagnetic compatibility, vol. 9, 2011, pp. 1–9. instruction facta universitatis series: electronics and energetics vol. 27, no 2, june 2014, pp. i i editorial as emphasized in the editorial for the second in the series of the anniversary issues, we will strive to attract best submissions and publish best papers from a very broad geographic area, thus making facta universitatis: series electronics and energetics a truly international journal. we will also insist that all published papers are of high quality and practical value, thus leading to their worldwide citation, i.e. to the journal’s placement onto sci list. whilst insisting that all published papers are of high quality and practical value, we wish to avoid creation a situation where the journal publishes by quantity rather than quality, and that is the reason why we already started with rigorous refereeing of all submitted papers. our new policy regarding publication of practical papers in facta universitatis: series electronics and energetics deserves to be elucidated now in more details. we want to publish more practical papers, as badly as the readers want to see them, but they are hard to provide. it should be emphasized here that the acceptance rate for practical papers is considerably higher than that for theoretical ones, since we want to encourage the submission of practical papers. the main reason why you see so many theoretical papers and so few practical papers is that people from an academic environment get paid to produce hardware rather than to write papers about it, and both of them do their jobs reasonably well. when next time you complain about how only a few practical papers appear in this, or any similar journal in the field, please ask yourself the following question: “when was the last time when i, or someone from this division of my organization submitted a practical paper to this journal?” if you have an idea for practical paper, do not hesitate to contact me, and i will be pleased to discuss it with you. this, third in the series of the anniversary issues, is collection of 9 invited papers by well-known experts for the specific areas, most of them being members of our editorial team, who present and discuss the state-of-the-art issues of practical interest in the field. as a new editor-in-chief, i, along with our editorial team, promise to continue to develop and improve facta universitatis: series electronics and energetics in order to keep it at the forefront of science and technology. ninoslav stojadinović editor-in-chief instruction facta universitatis series: electronics and energetics vol. 28, no 2, june 2015, pp. 297 307 doi: 10.2298/fuee1502297u system design considerations of universal uhf rfid reader transceiver ics  nikolay usachev 1 , vadim elesin 1 , alexander nikiforov 1 , george chukov 1 , galina nazarova 1 , denis sotskov 1 , nikolay shelepin 2 , vladislav dmitriev 2 1 national research nuclear university mephi (moscow engineering physics institute), moscow, russian federation, 2 «mikron» jsc, moscow, russian federation abstract. this paper describes the architecture, system analysis and implementation of world-wide regulation compliant uhf rfid reader transceiver for iso 18000-6 multi-class tags in the ism band 860 mhz-960 mhz. the presented considerations are based on a system analysis providing evaluation of the transceiver’s building blocks parameters in accordance with the required characteristics of a complete rfid reader system, read range, data transmission rate, reading speed and power consumption. the phase noise, noise figure, sensitivity, p1db, dynamic range are estimated for the design of a custom ‘system-in-package’ transceiver, implemented in ltcc-module. based on the direct-conversion architecture, the reader transceiver integrates rfblocks, frequency synthesizer, modulation and demodulation functions, low frequency analog baseband. the receiver sensitivity is down to -85 dbm, the transmitter produces output power of +17 dbm. key words: rfid, uhf, ltcc, ‘system-in-package’ , sige bicmos 1. introduction radio-frequency identification (rfid) uhf band supporting the epc global class 1 generation 2 and iso 18000-6a/b/c standards have become indispensable in today‟s distribution industries, purchasing, manufacturing, energy and healthcare services [1]. a uhf rfid system consists of reader(s), tags, and host computer. a uhf reader is a system with an integrated transceiver module as a core. as shown in fig.1, rfid reader transceiver consists of a uhf receiver and transmitter front-ends, frequency synthesizer, low frequency analog baseband, analog-to-digital (adc) and digital-to-analog (dac) converters, and digital baseband for data processing and control [2], [3]. the uhf front-end of a rfid reader transceiver contains a low noise amplifier (lna), power amplifier (pa) (required for improving sensitivity of receiver path and output power level in forward link), quadrature rf modulator and demodulator. the low frequency analog baseband of a rfid reader transceiver contains an active bandpass received september 20, 2014; received in revised form december 11, 2014 corresponding author: nikolay usachev national research nuclear university mephi (nrnu mephi), moscow, russian federation (e-mail: nausachev@mephi.ru) 298 n. usachev, v. elesin, a. nikiforov, et al. filters (bpf) with variable bandwidth, and variable gain amplifiers (vga). the bpf is required for rejection of noisy signals from dac and adc and digital baseband parts. transmitter digital baseband receiver digital baseband dac dac adc adc bpf bpf vga vga vga vga bpf bpf frequency synthesizer quad rf modulator quad rf demodulator rf pa rf lna d ig it a l in p u t/ o u tp u t r f t x o u tp u t r f r x i n p u t fig. 1 rfid reader transceiver block diagram this paper describes issues associated with the system design of uhf rfid reader ics [4]. the proposed considerations are based on the evaluation of the rf transceiver‟s building blocks parameters in conjunction with the required characteristics of a complete rfid reader system, i.e. read range, data transmission rate, reading speed, power consumption, etc. the phase noise, noise figure, sensitivity, p1db, dynamic range are estimated for the design of a custom „system-in-package‟ direct-conversion rfid transceiver that produces output power up to +17dbm and input linearity up to +6 dbm in the ism band between 860 mhz 960 mhz and provides a read range more than 1 m without using an external pa. 2. system analysis 2.1. read range typical parameters [1] of a uhf rfid system described in this work are presented in table 1. passive tags have no independent source of electrical power and are widely used in uhf rfid systems because of their cost. the rf carrier signal transmitted by a reader is required for the passive tag to be activated. table 1 uhf rfid system‟s parameters reader tag air interface ptx=30 dbm gtx = 3 dbi grx= 3 dbi ptagmin=-15dbm gtag = -5 dbi f=865 mhz m = 0,25 (ask) m[db]=20log(0,25) system design considerations of universal uhf rfid reader transceiver ics 299 minimal rf power level required for the tag activation (sensitivity) is -15-20 dbm for typical uhf rfid systems [2]. power level at the tag input ptag and reader receiver input prx can be calculated using the following equations [3], [4]: [dbm]tag tx tx tagp p g g loss    , (1) [dbm] 2 2 2rx tx tx tagp p g g loss m     , (2) 4 [db] 20log( ) l loss    , (3) where ptx is power level at transmitter output in dbm; gtx and gtag are gains of reader and tag antennas correspondingly in dbi; loss is loss in the air interface between reader and tag in db; m is modulation depth of tag backscattering signal in db; l is the distance between reader and tag (read range) in meters; λ is wavelength of carrier signal in meters. dependencies of ptag and prx versus distance between reader and tag for typical uhf rfid systems simulated by eq. (1)-(3), are shown in fig.2. fig. 2 power level vs. distance for typical uhf rfid system according to fig.2, for a rfid system with ptag = -15 dbm, l = 4 m, power level at receiver input should be more than -73 dbm. the semi-active tags (with high sensitivity) or high output power pa should be used to improve the read range. in the last case it may lead to a reader receiver blocking. 2.2. receiver noise figure in accordance with epc global c1 g2 standard [1] rfid reader needs to support listen before talk (lbt) and talk modes. this means that before a reader can transmit at a given channel, it should make sure the channel is free. only the reader receiver is active in lbt-mode. in talk-mode the receiver and transmitter operate in duplex. the amplitude-shift-keying (ask) is a basic type of modulation for forward (reader-tag) and reverse (tag-reader) link. 300 n. usachev, v. elesin, a. nikiforov, et al. to receive the messages reliably a bit error rate (ber) in uhf rfid systems should be less than 10 -5 [3], which corresponds to the signal-to-noise ratio (snr) of 12 db (for ask). the uhf reader receiver noise figure (nfrx) can be calculated using the equation [3]: [db] 174 10log( ) ,   rx s nnf p bw snr (4) where ps is the reader receiver sensitivity in dbm, bwn is receiver bandwidth in hz. in talk-mode ps is equal to -73 dbm and bwn is 1.28 mhz (for maximum bit-rate of 640 kbit/s) and value of nfrx should be less than 28 db. in lbt-mode bwn is 200 khz, ps should be -100 dbm and less and nfrx in accordance with eq. (4) should be less than 9 db. 2.3. receiver input linearity an example of a multiple reader environment is illustrated in fig. 3. reader a reader b reader c r fig. 3 interference in multiple reader environment in the case when readers a and b are operating in talk-mode reader c is operating in lbt-mode, 1 db input compression point of receiver р-1db can be calculated by the following equation [3]: _ _ _[dbm]    -1db_lbt tx a tx a rx c a cp p g g loss , (5) 4 (2r) [db] 20log( ). a closs   (6) in typical rfid system (see table 1) with the distance between readers 2r = 4 m p-1db should be more than -13.3 dbm. in mono-static configuration a single antenna can be used for both transmission and reception. in bi-static configuration two different antennas are used for transmission and reception. the main disadvantage of the mono-static configuration is insufficient isolation between receiver and transmitter. typical isolation value is less than 20 25 db. meanwhile, a mono-static configuration is a good choice for mobile reader with integrated antenna. typical isolation value between receiver and transmitter for bi-static configuration is 30 40 db. system design considerations of universal uhf rfid reader transceiver ics 301 examples of mono-static and bi-static reader configurations are shown in fig.4. antenna 50 ohm receiver transmitter lna pacoupler isolation 25 db antenna 2 antenna 1 is o la ti o n 3 0 d b receiver transmitter lna pa a) b) fig. 4 reader configurations: (a) mono-static (b) and bi-static in talk-mode р-1db is determined by self-jammer signal in the receiver input as a part of transmitter power ptx and can be calculated by the following equation: [dbm] -1db_talk txp p iso , (7) where iso is isolation between the reader‟s transmitter and receiver. in accordance with eq. (7) р-1db for a rfid system (see table 1) in mono-static (iso is less than 25 db) and bi-static configurations (iso is more than 30 db) should be more than 5 dbm and 0 dbm, respectively. 2.4. phase noise in talk-mode the main problem is a weak tag signal (flo+fblf) detection (typical power level is less than -60 dbm) which is limited by a carrier signal from the transmitter output (flo) and signals from adjacent readers (fac). the simplified signal spectrum diagrams at receiver rf input and low frequency output are shown in fig. 5a and fig. 5b respectively. for these reasons, special requirements to the phase noise level should be determined. frequency p o w e r flo+fblfflo fac frequencyfblf fac flo lo phase noise analog lpf frequency responce p o w e r a) b) fig. 5 (a) signal spectrum diagrams at receiver rf input and (b) receiver low frequency output 302 n. usachev, v. elesin, a. nikiforov, et al. providing that the conversion and proper processing of weak tag information signal is available, the phase noise level can be calculated using the following equation [5, 6]: @ [dbc hz] 10log( ),   n s npn bw p acrr snr bw (8) where bwn is bandwidth in hz, acrr – adjacent channel rejection ratio in db. the transceiver‟s key parameters estimated in accordance with equation (8) are summarized below:  sensitivity in talk-mode, determined by eq.(1) – (3), equals -73 dbm;  signal to noise ratio (snr) is 12 db, which corresponds ber of 10 -5 (for ask);  typical value of acrr [1] is 40 db;  the maximum available phase noise level should be less than -95 dbc/hz at 100 khz. 3. transceiver implementation to verify the proposed system approach to transmitter design a test uhf rfid reader transceiver, shown in fig.6a, was implemented as „system-in-package‟ in low temperature co-fired (ltcc)-module. the simplified cross-section of the ltcc-module which consists of seven layers is shown in fig.6b. a) b) fig. 6 uhf rfid reader transceiver module: (a) top-view (20×20 mm2) and (b) cross-section the transceiver ltcc-module (20 mm × 20 mm × 4 mm) with appropriate thermal properties and rf grounding, integrates the rf-receiver, transmitter and frequency synthesizer dies were fabricated on a 0.25 μm sige bicmos process. dupont 951 greentape (εr=7.8@3ghz, tgδ≤0.006@3 ghz) was used as substrate materials with 10…15 μm thick argentum conductors as low loss interconnection and microstrip lines. a minimal vias diameter of 100 μm is available within the ltcc-process that makes this technology suitable for realizing packages with ground plane inductance low enough [7]. the metal layers coming from top to bottom are as follows: top metal layer system design considerations of universal uhf rfid reader transceiver ics 303 (m7) is for smd-component, chip and kovar frame mounting, two microstrip lines interconnect layers (m6-m5), two layers (m4-m3) are for passive elements (rf capacitors, inductors, baluns, etc.) [7-10], layer m2 and m1 are for shield ground planes. the bottom shield ground plane layer is used for mounting ltcc-module on a printed-circuit board (pcb) by conventional soldering technique. 4. simulation and experimental results the transceiver performance (dynamic range, noise figure, sensitivity, p1db, phase noise, etc.) was simulated based on the proposed system design considerations in conjunction with the required characteristics of a complete rfid reader system, i.e. read range, data transmission rate, reading speed, power consumption, etc. measurements were performed using a special pcb test-fixture and specialized microwave test system (mwts), based on cascade summit 12000b microwave probe station, agilent n5230a vector network analyzer, n9020a signal analyzer [10, 11], shown in fig.7. mwts is successfully used with complex radiation test facilities for experimental studies and theoretical analysis of radiation effects in wide range complex multifunctional verylarge-scale mixed and digital ics [12-14]. fig.7 specialized microwave test system simulated and measured receiver conversion loss in talk-mode is in good agreement, as shown in fig. 8. measured frequency synthesizer carrier phase noise response is shown in fig. 9. simulated and measured transmitter output power characteristics in talk-mode are shown in fig.10. measured transmitter output spectrum for single-sideband modulation and carrier frequency of 865mhz, if bandwidth of 1 mhz is shown in fig. 11. the obtained rf output power is more than +17 dbm for a frequency range 860 to 960 mhz. 304 n. usachev, v. elesin, a. nikiforov, et al. fig. 8 simulated and measured receiver conversion loss in talk-mode fig. 9 measured frequency synthesizer carrier phase noise fig. 10 transmitter output power characteristics system design considerations of universal uhf rfid reader transceiver ics 305 fig. 11 measured transmitter output spectrum simulated and measured parameters of the uhf rfid reader transceiver presented in this paper are summarized in table 2 and compared with other published work. the measured parameters of the uhf transceiver are in good agreement with the modeling results and fulfill the rfid system requirements. some illegible difference between measured and simulated receiver conversion loss and transmitter output power are probably caused by insertion loss in test pcb microstrip lines. table 2 uhf rfid system‟s parameters parameter this work [3] rfid system requirements measurements frequency, mhz 860…960 860…960 835…930 technology process – sige bicmos 0.25 μm cmos 0.18 μm package – ltcc, 44 leads, 20×20 mm2 lqfp64a 10×10 mm2 (die area is 4×4 mm2) p-1db, dbm ≥ 0 (talk) ≥ -13 (lbt) +6 -23 -3 – nfrx, db ≤ 28 (talk) ≤ 9 (lbt) 27 9 35 – pn, dbc/hz @100khz ≤ -95 -95 -90 ptx, dbm – ≥ 17 10 power supply, v – +5 +3.3 power consumption, w – 1.1 0.4 estimated read range, m ≥0.5 0.9 0.4 306 n. usachev, v. elesin, a. nikiforov, et al. 4. conclusion architecture, system analysis and implementation of world-wide regulation compliant uhf rfid reader transceiver for iso 18000-6 multi-class tags in the ism band 860 mhz 960 mhz have been presented. the described system design considerations have been verified in the design process of the reader transceiver that integrates a uhf receiver, transmitter and frequency synthesizer, and covers the entire 860 mhz to 960 mhz frequency range. the reader transceiver parameters (input linearity, noise figure, phase noise, output power) have been optimized following the proposed approach provided the required characteristics of complete rfid reader system (read range, reading speed, multiply reader environment-mode, etc.). fabricated on a 0.25 μm sige bicmos process, the transceiver was implemented as „system-in-package‟ in ltcc-module and measured. simulated and measured parameters of the uhf rfid reader transceiver are in good agreement and fulfill the rfid system requirements. acknowledgments. the authors would like to thank konstantin m. amburkin and dmitry m. amburkin (specialized electronic systems, moscow, russia) for their contributions to the experimental investigations; vitaly a. telets (nrnu mephi) for helpful discussions and interesting in this work. references [1] epc radio frequency identity protocols c1g2 uhf rfid. protocol for communications at 860-960 mhz //www.epcgloballink.com. [2] k. xu et al., “design, verification and measurement techniques for uhf rfid tag ic”, in proc. 7th int. сonf. on wicom, 2011, pp. 1-5. [3] r. zhang et al., “several key issues in single-chip uhf rfid reader design”, in proc. international conference on microwave and millimeter wave technology (icmmt2010), 2010, pp. 1453-1456. [4] n. a. usachev, v.v. elesin, a.y. nikiforov and v. a. telets, “behavioral approach to design universal uhf rfid reader transceiver ics”, in proc. of the international conference on microelectronics (miel2014), pp. 405-408. [5] j. wang et al., “system design considerations of highly-integrated uhf rfid reader transceiver rf front-end”, in proc. 9th international conference on solid-state and integrated-circuit technology (icsict 2008), 2008, pp. 1560-1563. [6] i. mayordomo et al., “design and analysis of a complete rfid system in the uhf band focused on the backscattering communication and reader architecture”, 3rd europ. workshop on rfid systech., 2007. pp. 1-6. [7] v.v. elesin, g.n. nazarova, n.a. usachev, “design of passive elements for monolithic silicongermanium microwave ics tolerant to ionizing radiation”, russian microelectronics, vol 39, no. 2, pp. 134-141, 2010. [8] i.i. mukhin, v.v. repin, v.v. elesin, g.n. nazarova, a.s. shnitnikov, “balun integral circuits design”, in proc. 22nd international crimean conference microwave and telecommunication technology (crimico 2012), 2012, pp. 95-96. [9] v.v. elesin, g.v. chukov, d.v. gromov, v.v. repin, v.a. vavilov, “the effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits”, russian microelectronics, vol 39, no. 2, pp. 122-133, 2010. [10] d.v. gromov, s.a. polevich, v.v. elesin, “test and measurement system for microwave semiconductor devices and ic investigation on radiation hardness”, in proc. 19th international crimean conference microwave and telecommunication technology (crimico-2009), 2009, pp. 730-731. http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=5492939 system design considerations of universal uhf rfid reader transceiver ics 307 [11] v.v. elesin, “transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: experiment and model”, russian microelectronics, vol 43, no. 2, pp. 139-147, 2014. [12] o. kalashnikov, a. nikiforov. “tid behavior of complex multifunctional vlsi devices”, in proc. of the international conference on microelectronics (miel2014), 2014, pp. 455-458. [13] a. akhmetov, d. boychenko, d. bobrovskiy, et. al., “system on module total ionizing dose distribution modeling”, in. proc. of the international conference on microelectronics (miel2014), 2014, pp. 329-331. [14] a. chumakov, a. vasil'ev, a. yanenko, et. al, “single-event-effect prediction for ics in a space environment”, russian microelectronics, vol 39, no. 2, pp. 74-78, 2010. instruction facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 403-416 https://doi.org/10.2298/fuee1903403s © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd energy losses estimation by polynomial fitting and k-means clustering * lazar sladojević, aleksandar janjić university of niš, faculty of electronic engineering, niš, serbia abstract. this paper represents an approach for the estimation and forecast of losses in a distribution power grid from data which are normally collected by the grid operator. the proposed approach utilizes the least squares optimization method in order to calculate the coefficients needed for estimation of losses. besides optimization, a machine learning technique is introduced for clustering of coefficients into several seasons. the amount of data used in calculations is very large due to the fact that electrical energy injected in distribution grid is measured every fifteen minutes. therefore, this approach is classified as the big data analysis. the used data sets are available in the serbian distribution grid operator’s report for the year 2017. obtained results are fairly accurate and can be used for losses classification as well as future losses estimation. key words: grid losses, least squares optimization, big data, clustering 1. introduction big data analysis is rapidly becoming one of the most important tools in many aspects of engineering. data are collected everywhere, and their numbers and collection rates are increasing each day. therefore, various methods for processing of this data have been developed in recent years. these methods are efficient not only for extracting valuable information from a mass of data and their visualization, but also for developing predictive models for various applications. increasingly high amount of data can also be observed in a field of electrical power engineering. electrical power grid is being modernized faster than ever, with large number of smart sensors being installed in many points of the grid. these sensors collect information about various electrical variables which are important for normal grid received february 26, 2019; received in revised form may 19, 2019 corresponding author: lazar sladojević university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18106 niš, serbia (e-mail: lazar.sladojevic@elfak.rs) * an earlier version of this paper was presented at the 4th virtual international conference on science, technology and management in energy, energetics 2018, october 25-26, 2018 [1]. 404 l. sladojevic, a. janjic operation. these data are used everywhere, from the power generation side management to the demand side management. a good overview of many different applications of big data in electrical energy management and most common methods for data processing can be found in [2]. one of the most important usage of big data is prediction of solar and wind power generation based on collected weather data. weather has a major impact on production from renewable sources, and therefore it is very important to observe the relationship between the two. another, very interesting application of big data is detection of different consumption profiles based on measurements of different variables. example would be [3], where the authors have used hourly electricity consumption readings and external temperature measurements to compute consumption profiles for residential customers. electrical faults in power grid can present a big problem, especially when the fault occurs on a geographically distant part of a network. fault detection, identification and location [4] can also be obtained from the data collected in various measurement points in the grid. another big problem for electrical energy suppliers is energy theft. theft of electrical energy can in some places reach astonishingly high values. therefore, an approach for estimating the amount of stolen electrical energy based on smart meter data and least squares method for data processing has been developed and proposed in [5]. this topic is closely related to this paper, since the energy theft is observed as a non-technical loss which is also evaluated here. prediction of losses in distribution network has drawn more attention during the last years due to the deregulated energy market conditions, where distribution network operators are obliged to procure the energy for covering losses on the open electricity market [6, 7]. increased market deregulation [7, 8] and shares of renewable and intermittent energy generation [9], makes line loss prediction difficult. line losses themselves are also influenced by a multitude of factors and non-linear correlations which makes predictions model even more complicated. design of line loss prediction models have become a research priority in transmission networks as well and several different models have been proposed [10, 11, 12]. losses are allocated using the quadratic expression in [10], formulated explicitly in terms of all the transactions in the system [11] with consideration of wind generation and varying loads in [12]. however, a majority of these models are mainly designed for line loss allocation issues for market applications as opposed to day-ahead predictions for tso purposes. in distribution networks, different methods for the calculation of losses are used, including heuristic algorithms [13] and neural networks [14]. the near quadratic relationship that exists between load and loss has been used to develop empirical relations for estimation of loss [15]. these relationships relate either the loss and load factors [16] or the loss and load [17, 18]. in these methods, using simplified feeder models for computation of the loss, the coefficients in the quadratic function are determined using a curve fitting approach. although the previous research and studies established satisfactory models for the energy losses calculation, they didn’t treat the process of the open market losses procurement. the contribution of this paper is therefore the seasonal classification and determination of curve fitting parameters for the purchase of energy losses. least squares optimization method which is used in this paper is very similar to machine learning energy losses estimation using polynomial fitting 405 regression algorithms, but with certain restrictions attached to it. it is suitable for numeric data with linear or quadratic relationships of measured (input) and estimated (output) values. least squares regression is a so called “supervised” learning algorithm, which will be described further in section 3. however, for experimental purposes, another machine learning algorithm was used for model improvement. this is the so-called clustering algorithm, which belongs to the “unsupervised” learning category. even though these algorithms are used in various applications in electrical power engineering, to the authors knowledge, this is their first application in estimation of losses. 2. problem description in this paper, an approach for estimation of losses in distribution grid based on the available data analysis is proposed. these losses comprise of two components, namely technical losses (tl) and non-technical losses (ntl). the proposed approach is based on analysis of losses data collected in year 2017. this data will be used to estimate parameters of a predictive model for future losses estimation. 2.1. physical interpretation technical losses can be split into two terms. the first term represents the constant losses. these mainly represent the losses in magnetic cores of distribution transformers, but other factors, such as losses due to corona, constantly operating measurement equipment, leakage currents and losses in dielectrics also contribute. the other term is variable losses. they appear mainly in conductors but a small part of these losses can also be observed in other current carrying parts, such as switch contact resistances and busbars. these losses are proportional to the square of current or, equivalently, to the square of active power. non-technical or commercial losses appear due to infrequent or bad reading of measurement equipment and electrical power thefts. therefore, these losses are proportional to the active power. in distribution power grid of serbia, electrical energy received from the transmission grid is measured every fifteen minutes throughout whole year. on the other hand, energy supplied to end users is measured once every month. total losses represent the difference between total energy received from the transmission grid and total energy supplied to end users during one month. these data are collected and can be used for future losses estimation and losses classification. one method that allows this kind of estimation is described in the following section. 2.2. mathematical model there are several ways to model the losses in the distribution grid, but they all need information about energy obtained from the transmission grid and distributed sources and energy delivered to end users. the model chosen here represents the losses in the following polynomial form [19, 20]: 406 l. sladojevic, a. janjic 2 , ( )c j j j i j i i i δw a b p c p δt      (1) where δwc,j are the calculated (estimated) total losses for month j, i is the index of fifteenminute interval δti in month j, pi is an average input power for the that interval, aj represents the amount of constant losses in month j, bj is the coefficient associated with the commercial losses and is proportional to input power pi in month j, and finally cj is the variable losses coefficient for month j, proportional to the square of power. for now, coefficients a and c are considered constant throughout the whole year, while the coefficient b varies by month. this assumption will be addressed in the following chapter. on the other hand, measured losses, denoted as δwm,j are already available as a difference between measured input and measured output energy. for calculation of coefficients a, b and c, least squares method was used, which means that the sum of squared differences between the calculated and measured values of losses was minimized. total number of variables is 36 (twelve for constant losses – coefficients aj, twelve for commercial losses for each month – coefficients bj and twelve for variable losses – coefficient cj). some of these variables are considered constant in some calculation, so the effective number of variables is lower. general objective function for minimization can now be written as: 2212 12 2 , , , 1 1 min ( , , ) ( ) ( )c j m j j j i j i i m j j j i f a b c δw δw a b p c p δt δw                      (2) coefficient values are constrained to a certain range: for coefficient aj: amin ≤ aj ≤ amax, for coefficients bj: bmin ≤ bj ≤ bmax and for coefficient cj: cmin ≤ cj ≤ cmax. constraints for coefficients a, b and c have to be properly selected, based on their physical interpretation explained in the following chapter. 2.3. restrictions of the proposed method proposed method has one drawback, it uses the monthly readings of energy consumption. this means that the value of measured losses is prone to errors due to bad or untimely readings. for example, in some rural areas, electricity consumption is read only every three months. this leads to slight under readings for certain months and slight over readings for others and, consecutively, to miscalculation of some parameters. better results would be obtained if the consumption was read with higher frequency, preferably the same as the input readings. this would require large number of smart meters installed at every point in the grid, which is not yet realized in practice. however, smart meters are being installed every day and, in the future, more reliable and accurate data will be available for analysis. 3. mathematical model solving method as it was mentioned earlier the mathematical problem given with (2) is solved using the least square optimization algorithm. this problem is very similar to a linear regression problem which exists in the field of machine learning. in linear regression, output values energy losses estimation using polynomial fitting 407 are a linear combination of constant parameters and measured values of features (predictors). from (1) it can be observed that in this case, output values would be monthly measured values of losses, δwc,j, features would be δti, pi·δti and pi 2 ·δti and their coefficients would be a, b and c, respectively. however, since restrictions have been imposed on all parameters and some of them are also variable, this problem was reformulated into non-linear programming optimization problem, given with (2). for solving of this problem, standard mathematical methods were used, in this case the interior point algorithm. input parameters are the fifteen-minute readings of electrical energy injected from the transmission grid and distributed sources into distribution grid and the monthly measured values of losses in the distribution system. output consists of the values of coefficients a, b and c. for easy programing and formulation of problem, an open source optimization platform yalmip [21] was used. yalmip’s syntax allows easy and intuitive definition of variables, objective function, constraints and other options. yalmip was used with one of matlab’s integrated solvers for performing computations. it can select solver for a problem automatically, based on its structure, but also permits users to select the solver they think it fits best. this allows all kinds of problems to be defined in the same way, unlike the case of using each solver individually, where user would have to define the problem in a form specific to that particular solver. the solver used for calculation of coefficients is matlab’s fmincon nonlinear programming solver. this solver utilizes several different algorithms for objective function minimization, but the one used here was the interior point algorithm [22]. variables involved in calculations are already denoted aj, bj and cj, with j = 1...12. objective function is given with (2). constraints are chosen based on real data, and the realistic values of coefficients. the total nominal iron core losses power of all transformers in the distribution system of serbia is approximately 32 mw. therefore, the parameter a constriction adopted is 30 ≤ a ≤ 40. commercial losses always exist, but they do not exceed 10 % in serbian distribution grid. thus, adopted constraint for parameter b is 0.01 ≤ b ≤ 0.1. unlike the previous parameters whose extreme values are relatively easy to estimate, parameter c cannot be constrained in such a straight-forward manner. since it is multiplied by a square of power, its value is undoubtedly very small. based on author’s previous experience, adopted constriction for this parameter is 0.00002 ≤ c ≤ 0.00006. as it was mentioned in the previous section, for this calculation the coefficients a and c are considered constant, while the coefficient b varies by month. this is not to be confused with constraints which are simply the minimum and maximum sensible values that can be obtained as calculation results. since the grid topology and number of transformers remains very much the same throughout the whole year, it makes sense to keep coefficients a and c constant. on the other hand, coefficient b is affected by many external factors and therefore it is considered variable. all of these assumptions are used for the first calculation. 4. numerical results obtained results are presented in table 1 and fig. 1. table 1 contains the real values of coefficients, while the values of coefficients bj and c in fig. 1 are scaled. the scaling is used only to make all values visible on a chart. after the scaling, coefficients bj are shown 408 l. sladojevic, a. janjic in percent, while the coefficient c is now dimensionally equal to w -1 . fig. 2 represents the comparison between calculated and measured values of losses. table 1 calculated values for coefficients month coefficient a (mw) coefficient b (pu) coefficient c (mw -1 ) january 32.739 0.091499 0.000020609 february 32.739 0.072052 0.000020609 march 32.739 0.061105 0.000020609 april 32.739 0.039002 0.000020609 may 32.739 0.057862 0.000020609 june 32.739 0.013125 0.000020609 july 32.739 0.019671 0.000020609 august 32.739 0.014427 0.000020609 september 32.739 0.018085 0.000020609 october 32.739 0.043728 0.000020609 november 32.739 0.051645 0.000020609 december 32.739 0.065777 0.000020609 it can be observed from fig. 2 that the computations were done successfully. calculated and measured losses are equal which means that the coefficients are well estimated. statistically speaking, it can be said that the input data, defined in the previous chapter are the training data for the model (1). fig. 1 scaled values of the calculated coefficients energy losses estimation using polynomial fitting 409 fig. 2 comparison between calculated and measured losses from fig. 2 it is obvious that the model fits the training data well. now these coefficients can be used for future estimation of losses under the previously introduced assumptions. 5. model improvement distribution companies are procuring the energy for covering losses on the open electricity market. in order to simplify the procurement procedure, the whole concept can be extended by grouping months into several distinct seasons. the advantage of distinction is grouping of coefficients by season instead of having different coefficients for each month and potentially better prediction accuracy in the certain season. the accuracy however depends on quality of the collected data. grouped coefficients are less prone to various stochastic errors than individual coefficients. besides that, there are noticeable differences of the climate factors, such as external temperature and humidity in the same months during the years. even the reading of electrical energy consumption is not as frequent in winter as it is at summer. on the other hand, adopting one set of coefficients for the whole year would cause too high error values in future calculation of losses. therefore, a three-season model was adopted, and months were clustered into winter, summer and “transient” seasons. clustering itself is an “unsupervised” machine learning algorithm, which means that, unlike regression, it doesn’t have the output data to compare inputs to. instead, it seeks to find similarities among the input measurements. in this case, there are twelve input points twelve months and three features – coefficients a, b and c. this means that there is a total of 36 input values among which a clustering algorithm should find similarities. a twelve by three matrix was used for convenient storage of these data. in this particular 410 l. sladojevic, a. janjic case, that matrix is given in tabular form with table 2, where rows represent input measurements for each month and columns represent features. the number of clusters is another input to the clustering algorithm. as explained earlier, the number of clusters was chosen to be three, since it was utmost logical to divide year into three seasons according to weather conditions. nevertheless, three different number of clusters were examined, ranging from two to four and the clustering results were observed for each calculation. since the results depend on both number of clusters and initial (random) clustering [23], there have been several possible solutions, among which the one with most sense was chosen. generally, there is no single “best” way of choosing the number of clusters. rather, a certain expertise in the field that the data belong to is required in order to choose the appropriate number [23]. another important issue with clustering is different scaling of data features. features’ scales can be different from each other by several orders of magnitude, such as in table 2. to address this issue, a normalization is required in order to obtain meaningful clustering results. for this particular case of clustering months into seasons, a somewhat different approach than before was used. the previously introduced constrictions still apply, but now only coefficient a is considered constant and its value fixed to 32 mw. all the other coefficients are considered variable for every month. this way, coefficients are optimized so that calculated losses are equal or almost equal to measured losses, similar to the previous case, depicted in fig. 2. these values of coefficients serve as an input data set for the process of clustering. therefore, they will be referred to as the initial coefficients. obtained values of these coefficients are shown in table 2, while the fig. 3 shows their scaled versions (same scaling as fig. 1). comparison of calculated and measured losses is shown in fig. 4. values of errors i.e. differences from fig. 4, both in absolute and relative units are given in table 3. table 2 calculated values for coefficients month coefficient a (mw) coefficient b (pu) coefficient c (mw -1 ) january 32 0.0353882 0.00003250295 february 32 0.0380628 0.00002887427 march 32 0.0198292 0.00003235119 april 32 0.0360867 0.00002157678 may 32 0.0337267 0.00002904083 june 32 0.0125835 0.00002087766 july 32 0.0158188 0.00002198364 august 32 0.0132383 0.00002108569 september 32 0.0150446 0.00002172672 october 32 0.039316 0.00002210148 november 32 0.0455431 0.00002230626 december 32 0.0357529 0.00002795988 energy losses estimation using polynomial fitting 411 fig. 3 scaled values of the calculated coefficients after initial optimization fig. 4 comparison between calculated and measured losses after initial optimization 412 l. sladojevic, a. janjic table 3 absolute and relative differences in calculated and measured losses after initial optimization month absolute difference (mwh) relative difference (%) jan 0.0000 0.0000 % feb 0.0000 0.0000 % mar 0.0000 0.0000 % apr 117.5637 0.0432 % may 0.0000 0.0000 % jun 0.0000 0.0000 % jul 0.0000 0.0000 % aug 0.0003 0.0000 % sep 0.0000 0.0000 % oct 784.1185 0.2644 % nov 407.3877 0.1088 % dec 0.0000 0.0000 % from table 2, it can be noted that the values of coefficients bj are different than those in table 1. the reason for this lies in the fact that now all the other coefficients are different too (although coefficient a is only slightly different). this means that the coefficients bj also had to change in order to achieve the best possible fit to the input data. from fig. 4 and table 3 it is obvious that coefficients fit the input data almost perfectly, since the yellow bars are almost invisible for every month. coefficients b and c are now variable throughout months, and discovering similarities among them is the key for clustering of months. this approach theoretically gives better results than the approach with two constant parameters because in the former case, the clustering is done on the basis of two features (parameters b and c), while in the latter case, clustering would have been done on the basis of one feature only (parameter b). this theory has also been proven experimentally. based on these values, months are clustered into seasons and clustering results are shown in table 4. table 4 clustered months month jan feb mar apr may jun jul aug sep oct nov dec cluster index 1 1 1 3 1 2 2 2 2 3 3 1 season win win win tra win sum sum sum sum tra tra win season labels in table 4 stand for winter season (cluster 1, label “win”), summer season (cluster 2, label “sum”) and transient season (cluster 3, label “tra”). from the table 4 it can be observed that months are clustered almost completely as expected. the only exception is may, which has been clustered as a winter month. looking back to the previous calculations, one can notice that may does not follow the usual pattern like other months. in fig. 1, all months follow general pattern that coefficient b values get lower during summer and higher during winter in characteristic “elbow” shape. however, value for may presents an outlier from that pattern since its value is higher than values for the surrounding months. there is also a visible difference of parameter c for may in fig. 3 energy losses estimation using polynomial fitting 413 compared to surrounding months. this value corresponds more to the winter months than to other months. the reason for this could be a significant under reading of electrical energy consumption in may, untimely data collection and report creation, error in statistical processing of data or simply higher energy theft rate in that particular month. final coefficients were calculated as centroids of each cluster from table 4. centroid of a cluster is a vector of mean values of all features for all points in that cluster. these coefficients are shown in table 5 and their scaled values depicted in fig. 5 while the comparison of calculated and measured losses for each month is shown in fig. 6 and absolute and relative differences given in table 6. table 5 grouped coefficients for three seasons cluster index season coefficient a (mw) coefficient b (pu) coefficient c (mw -1 ) 1 winter 32 0.0350917 0.00002942712 2 summer 32 0.0141719 0.00002141825 3 transient 32 0.0403153 0.00002199484 fig. 5 grouped coefficients for the three seasons 414 l. sladojevic, a. janjic fig. 6 comparison between calculated and measured losses after clustering table 6 absolute and relative differences in calculated and measured losses after initial optimization month absolute difference (mwh) relative difference (%) jan 48709.5891 7.6852 % feb 697.9128 0.1541 % mar 12719.8945 3.3250 % apr 13128.5232 4.6069 % may 4248.3817 1.5425 % jun 6624.1044 3.5945 % jul 7211.0681 3.7413 % aug 4227.7345 2.1589 % sep 3686.2140 2.0147 % oct 2343.3930 0.7859 % nov 16880.7436 4.7272 % dec 17489.1562 3.5188 % it can be seen that small error appears in the calculation. this error is a consequence of fact that one set of coefficients cannot perfectly fit all months, but seeks to reduce the overall error instead. higher error can only be observed for winter months, due to the fact that may once again influenced this calculation. this also reflected to the somewhat higher value of coefficient c for winter season. nevertheless, the overall error value is very low compared to values of losses. energy losses estimation using polynomial fitting 415 6. conclusions in this paper, a new approach for calculation of losses in the electrical distribution grid was presented. there are two general classes of losses: technical and non-technical losses. both types are unavoidable, but it is important to know how each type affects the total amount of losses, i.e. they have to be classified. this is done by analyzing the data available from the distribution grid operator. the data contain the distribution grid input energy measurement for every fifteen-minute time interval and the monthly measurements of energy delivered to end users. difference between these two are the real total losses for a certain month. on the other hand, a polynomial equation is introduced to calculate that same losses based on the grid input power. coefficients for this equation are computed using the least squares method, by minimizing the squared differences between the calculated and measured losses. these coefficient values are constrained based on their physical interpretation and authors experience. results show that the minimization was successful and that the losses can clearly be classified this way. additionally, calculated coefficients can be used for future estimation of losses. this concept was further expanded by introducing clustering of months into seasons. the obtained results show expected distinction of months, with the exception of may, which was classified as a winter month. this, along with the results of previous calculations, lead to a conclusion that there has probably been an error in energy consumption readings in this particular month. however, the overall results are very good, and the whole concept can be further improved. future research will be focused on processing the data for the previous few years. this could allow the researchers to discover some specific trends and obtain better clustering accuracy since some seasons may begin in one year and end in another. acknowledgement: this research is partly supported by project grant iii44006 financed by the ministry of education, science and technology development of the republic of serbia. references [1] l. sladojević, a. janjić, m. ćirković „calculation of losses in the distribution grid based on big data“, in proceedings of the 4th virtual international conference on science, technology and management in energy, energetics 2018, october 25-26, 2018, pp. 19-22 [2] k. zhou, c. fu and s. yang, “big data driven smart energy management: from big data to big insights”, renewable and sustainable energy reviews, vol. 56, pp. 215–225, 2016. [3] o. ardakanian, n. koochakzadeh, r. p. singh, l. golab, and s. keshav, “computing electricity consumption profiles from household smart meter data,” in proceedings of the edbt workshop on energy data management, 2014, pp. 140–147. [4] h. jiang, j. zhang, w. gao, and z. wu, “fault detection, identification, and location in smart grid based on data-driven computational methods,” ieee transaction on smart grid, vol. 5, no. 6, pp. 2947–2956, 2015. [5] d. n. nikovski, z. wang, a. esenther, h. sun, k. sugiura, t. muso and k. tsuru, “smart meter data analysis for power theft detection”, in proceedings of the int. workshop machine learning and data mining in pattern recognition, ser. lncs, vol. 7988. springer, 2013, pp. 379–389. [6] p. nallagownden and t. p. hong, “development of a new loss prediction method in a deregulated power market using proportional sharing,” in proceddings of power engineering and optimization conference (peoco), 2011 5th international. shah alam, selangor, malaysia: ieee, june 2011, pp. 48–53. 416 l. sladojevic, a. janjic [7] a. petrušić, a. janjić, “economic regulation of electric power distribution network”, in proceedings of 2nd virtual international conference on science, technology and management in energy, niš, serbia, 2016, pp. 25-32 [8] w. d. liu, t. j. zeng, t. jun, l. l. shang guan, and b. j. li, “research on electric power with development and application of line loss rate forecasting software based on mlrm-gm,” advanced materials research, vol. 977, pp. 182–185, june 2014. [9] k. li, z. q. sun, and m. wang, “theoretical line loss calculation of distribution network considering wind turbine power constraint,” advanced materials research, vol. 986-987, pp. 630–634, july 2014. [10] q. ding and a. abur, “transmission loss allocation based on a new quadratic loss expression,” ieee transactions on power systems, vol. 21, pp. 1227–1233, august 2006. [11] g. gross and s. tao, “a physical-flow-based approach to allocating transmission losses in a transaction framework,” ieee transactions on power systems, vol. 15, pp. 631–637, may 2000. [12] elmitwally, a. eladl, and s. m. abdelkader, “efficient algorithm for transmission system energy loss allocation considering multilateral contracts and load variation,” iet generation, transmission & distribution, vol. 9, pp. 2653–2663, august 2015. [13] l. tian, q. q. wang, and a. z. cao, “research on svm line loss rate prediction based on heuristic algorithm,” applied mechanics and materials, vol. 291-294, pp. 2164–2168, february 2013. [14] y. ren, x. g. zhang, and x. c. huang, “study on the prediction of line loss rate based on the improved rbf neural network,” advanced materials research, vol. 915-916, pp. 1292–1295, april 2014. [15] p. s. nagendra rao and r. deekshit energy loss estimation in distribution feeders ieee transactions on power delivery, vol. 21, no. 3, july 2006. [16] m.w. gustafson, j. s. baylor, and s. s. mulnix, “equivalent hours loss factor revisited,” ieee trans. power syst., vol. 3, no. 4, pp. 1502–1507, nov. 1988. [17] m. w. gustafson, “demand, energy and marginal electric system losses,” ieee trans. power app. syst., vol. pas-102, no. 9, pp. 3189–3195, sep. 1983. [18] w. gustafson and j. s. baylor, “approximating the system losses equation,” ieee trans. power syst., vol. 4, no. 3, pp. 850–855, aug. 1989 [19] m. järvinen, “developing network loss forecasting for distribution system operator”, master of science thesis, tampere university of technology, 2013 [20] https://www.ofgem.gov.uk/ofgem-publications/43519/sohn-overview-losses-final-internet-version.pdf, accessed on 26.2.2019. [21] j. löfberg, “yalmip: a toolbox for modeling and optimization in matlab”, in proceedings of the cacsd conference, taipei, taiwan, 2–4 september 2004. [22] waltz, r. a., j. l. morales, j. nocedal, and d. orban, “an interior algorithm for nonlinear optimization that combines line search and trust region steps,” mathematical programming, vol. 107, no. 3, pp. 391– 408, 2006. [23] g. james, d. witten, t. hastie, r. tibshirani, ” an introduction to statistical learning with applications in r”, springer texts in statistics, springer science + business media new york, 2013 (corrected at 6th printing 2015). instruction facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 561 588 doi: 10.2298/fuee1404561n recent research in vlsi, mems and power devices with practical application to the iter and dream projects  andrzej napieralski, cezary maj, michal szermer, piotr zajac, wojciech zabierowski, małgorzata napieralska, łukasz starzak, mariusz zubert, rafał kiełbik, piotr amrozik, zygmunt ciota, robert ritter, marek kamiński, rafał kotas, paweł marciniak, bartosz sakowicz, kamil grabowski, wojciech sankowski, grzegorz jabłoński, dariusz makowski, aleksander mielczarek, mariusz orlikowski, mariusz jankowski, piotr perek lodz university of technology, department of microelectronics and computer science, poland abstract. several mems (micro electro-mechanical systems) devices have been analysed and simulated. the new proposed model of sic mps (merged pin-schottky) diodes is in full agreement with the real mps devices. the real size dll (dynamic lattice liquid) simulator as well as the research on modelling and simulation of modern vlsi devices with practical applications have been presented. based on experience in the field of atca (advanced telecommunications computing architecture) based systems a proof-of-concept daq (data acquisition) system for iter (international thermonuclear experimental reactor) have been proposed. key words: mems, power devices, sic, dll, vlsi, nuclear fusion. 1. edumems project the edumems (developing multidomain mems models for educational purposes) project started in 2011 and lodz university of technology acts as project coordinator. the project consortium includes two polish universities (lodz and wroclaw university of technology), one french and one belgian partners (laas-cnrs laboratory and ghent university) and two ukrainian universities (lviv polytechnic national university and national technical university of ukraine in kiev). the main goal of the project is to received october 6, 2014 corresponding author: andrzej napieralski lodz university of technology, department of microelectronics and computer science, ul. wolczanska 221/223, 90924 lodz, poland lodz university of technology, department of microelectronics and computer science (e-mail: napier@dmcs.pl) 562 a. napieralski et al. bring together scientists from different areas of research (mechanics, electronics, optics, fluidics) to work together on interdisciplinary mems modelling and design. mems operate in the microscale and most mems devices involve phenomena from multiple domains. therefore, to provide in-depth quality research of mems, specialists from all these domains have to cooperate. thanks to the project, researchers can go to the partner universities and work there with specialists in a given field. such newly founded research groups guarantee that the performed design, analysis and simulations take into consideration and adequately model all phenomena which arise in mems devices. one have to underline that the common research in mems area have been conducted already by lut and laas in the frame of barmint project [1]. during the project, several mems devices have been analyzed and simulated, new modelling methodologies have been proposed and new device models have been invented. in particular, the following topics have been researched:  modelling of uncooled microbolometer  modelling of micromembrane  modelling of rf temperature sensor  modelling of microfluidic flow in this paper we describe in detail the work performed on first two devices, namely microbolometer and membrane. 1.1. modelling and simulation of uncooled microbolometer bolometers are used to measure radiation, in particular they are used in thermal cameras to measure infrared radiation [2]. their principle of operation is that the radiation heats up an active element which changes its resistance due to the temperature change. the resistance change can be then measured and based on the result, the intensity of radiation is calculated. thermal cameras usually use arrays of microbolometers in which each one represents one pixel. after reading the radiation coming on all pixels, the camera is able to provide the entire thermal image of observed scene. the detailed description of microbolometer operation is beyond the scope of this paper. here, we will concentrate on modelling electrical and thermal phenomena in these devices. let us first discuss the thermal domain. the role of the microbolometer is to provide the highest possible temperature change for a given radiation. thus, the surface of the device should be as large as possible and made of material which has a high temperature coefficient of resistance (tcr). moreover, the heated surface of this material should be thermally separated from the chip surface so that the absorbed heat does not heat up the entire chip. as far as the electrical domain is concerned, the designer has to ensure that it is possible to measure the resistance of the heated element. this most often involves applying a given current through the element and measuring the voltage. thus, the used material should be a conductor. all mentioned requirements are met in the structure of mems-based microbolometer (see fig. 1). it can be seen that the structure is composed of a bridge suspended over the substrate and supported by thin legs. thanks to this structure, the bridge is thermally isolated from the substrate. the isolation is of course not perfect and depends on the size of the supporting legs. it can be also observed that there is a thin layer of active material which has a serpentine shape and goes from one leg to another. this layer is the active recent research in vlsi, mems and power devices with practical application to the iter and… 563 material: the one whose resistance will be measured. consequently, it is made of thin conductor with high tcr. several materials have been proposed for the role of active material, namely vanadium oxide, titanium, amorphous silicon etc. this thin layer is encapsulated in the membrane whose role is to maximize the device surface and to absorb as much radiation as possible. naturally, the membrane should be made of isolator (silicon nitride is most often used) so that it does not interfere with the current flowing through the active layer. fig. 1 typical microbolometer structure electro-thermal simulation of microbolometers has to include the coupling between electrical and thermal domain. the reason is that joule heat dissipated in the active layer is a function of resistance but also the resistance is a function of temperature (so basically a function of dissipated heat). therefore, accurate and fast simulation of such structures is difficult. of course, one can use finite element model based tools like ansys [3] or comsol [4] to obtain detailed simulation results. during the project, we performed thorough simulations of various microbolometer shapes, tested various layer dimensions and used various materials. a sample simulation result for titanium-based 50×50 µm microbolometer is presented in fig. 2. it presents the maximal transient temperature reached in microbolometer due to the applied current pulse. note that on one hand, pulse amplitude should be as small as possible to reduce joule heating. however, on the other hand, the bias current should be as high as possible to increase the sensitivity. consequently, our simulation give concrete answer to the designer which has to make this trade-off. for example, it shows that in case of this particular microbolometer, a current pulse of 0.2 ma amplitude and 100 µs duration will cause the temperature rise up to 26c. on the other hand, a current of 0.25 ma and 150 µs will increase the temperature to 30.2c [5]. fig. 2 maximal transient temperature due to the applied current pulse fig. 3 response of a microbolometer for a constant radiation and current pulse 564 a. napieralski et al. however, the simulation time may be quite long in this case, which is sometimes prohibitive. in some cases, designers are in need of faster and simpler models. therefore, a significant amount of work has been performed to design an analytical, electro-thermal model of a microbolometer, which allows obtaining results very close to those calculated by ansys in a much shorter time. fig. 3 shows the response of a microbolometer for a constant radiation and current pulse for both ansys model and simplified, analytical model [6]. it shows that the designed model gives basically identical results to those obtained using complex ansys model. needless to say, the simulation time using our model is much shorter, especially in case of transient simulation with a significant number of time points. we have performed similar comparisons for various microbolometers (various sizes, materials, shapes) and the maximal error of our model with respect to ansys model was found to be 3%. 1.2. modelling and simulation of micromebrane membranes are commonly used in many micromachined applications. they are used as a mechanical part of a device that allow converting external force into electrical signal (via membrane deflection) as well as generating force by applying electrical signal. wide spectrum of application defined many constructions of membranes (number of layers, materials used in fabrication) and wide range of membrane shapes and dimensions. therefore, the simulation of a membrane became crucial step in device production. very often fem analysis is used in mems simulation. although, it can be very detailed, the time consumption is rather high. as the simulation has to be run repeatedly, numerical simulation can be very inconvenient. then, the analytical modelling can be a very good alternative, especially when the model is very accurate and allows combining mechanical domain with other ones [7]. 1 2 3 4 5 6 7 8 9 x 10 11 0 5 10 15 x 10 4 membrane ratio = 1 spring constant (n/m) n u m b e r o f s a m p le s si <100> si <110> -4 -3 -2 -1 0 1 2 3 4 0 0.5 1 standard deviation from mean n o rm a li z e d d e n s it y si <100> si <110> 1 2 3 4 5 6 7 8 9 x 10 11 0 5 10 15 x 10 4 membrane ratio = 1 spring constant (n/m) n u m b e r o f s a m p le s si <100> si <110> -4 -3 -2 -1 0 1 2 3 4 0 0.5 1 standard deviation from mean n o rm a li z e d d e n s it y si <100> si <110> fig. 4 membrane stiffness distribution for square membrane one of the highest benefits of analytical modelling can be achieved in statistical simulation. even we found optimal parameters of the membrane that give the desired performance of the device, the fabrication process does not guarantee that the real device will meet this requirements. many fabrications steps have some tolerances that affect the device performance. the investigation of this influence can be performed using monte carlo analysis. component tolerances are used in generation of parameters distribution and then the simulation is run many times for each case to obtain the distribution of the device performance. a sample simulation was performed for a silicon membrane with dimension of 200 µm width and 4 µm of thickness and various lengths (from square membrane to rectangular). it was assumed that the fabrication process influences on recent research in vlsi, mems and power devices with practical application to the iter and… 565 membrane dimensions and residual stress within it. the distribution of input parameters was generated using the normal distribution and tolerances provided by typical equipment used in fabrication process. the sample results for square membrane are presented in fig. 4. it presents the distribution of the membrane stiffness for two crystallographic orientations. it can be seen that rather negligible input tolerances affects the membrane properties significantly. the deviation from the mean value can reach 3 standard deviation and “only” 70% of membranes are located within one standard deviation. depending on our requirements, the tolerances of fabrication process may lead to fabrication of useless devices. therefore, the statistical simulation can be very useful in estimation of yield production. in many applications the membranes are fabricated using wafer bonding technique [8]. the bonding process usually requires high temperature annealing of the structure to strengthen the bond. if two different materials are bonded, the residual stress appears in the structure which is usually undesired because it changes the response of the membrane. the evolution of mems fabrication technology allows nowadays performing bonding process in stress free temperature. however, this technique does not guarantee that the residual stress will not appear. it can only reduce its value significantly. it has to be mentioned that the device operates in variable temperatures that influence on residual stress value. therefore, it is desired to investigate this influence in a typical range of operational temperature of a device. the simulation was performed for a structure that consists of silicon membrane fabricated on pyrex surface by bonding performed in 270c (that is known as stress free temperature). it was found that the residual stress disappears when the structure is returned to about 13c as near this temperature the deflection of unloaded membrane changes direction. then, the influence of operational temperature was investigated for temperatures in range of 0-50c. the figures below show the change of membrane stiffness and normal stress in the centre of membrane edge (see fig. 5). 0 10 20 30 40 50 2.62 2.64 2.66 2.68 2.7 2.72 2.74 temperature s p ri n g c o n s ta n t [k p a /u m ] residual stress no residual stress 0 10 20 30 40 50 17.5 18 18.5 19 19.5 20 20.5 21 temperature n o rm a l s tr e s s i n t h e c e n tr e o f m e m b ra n e e d g e [ m p a ] residual stress no residual stress fig. 5 membrane stiffness and normal stress within the membrane as a function of temperature comparing to the membrane with no residua stress, the membrane stiffness varies up to is 2.3%. although, this change seems to be negligible, in case of capacitive read-out the capacitance will vary up to 10%. on the other hand, the stress within the membrane varies up to 10% also. in case of piezoresistive read-out, the response will be different by the same value. 566 a. napieralski et al. 2. behavioral electro-thermal models of merged sic diode silicon carbide devices are the most promising semiconductor devices for power applications [9]. they offer excellent thermal properties and low on-state resistance together with high voltage capability. this has made possible the manufacturing of high voltage unipolar devices reaching very high operating frequencies. as a consequence, the most frequently used sic devices are merged pin-schottky (mps) diodes [10]. the mps diode models provided by device manufacturers the classical spice embedded diode model, as well as physical models are all unable to accurately reproduce temperaturedependent device behaviour of these devices in a relatively wide range of operating temperatures [11]. however, accurate models are required in order to provide engineers with a reliable tool for design of robust state-of-the-art power conversion appliances. consequently, a simple and accurate electro-thermal model of the mps diode is necessary. behavioural models have great potential in this regard, in particular when unipolar devices are concerned. electrical phenomena in schottky diodes during conduction and switching are generally simpler as compared to pin diodes, which renders behavioural modelling feasible. however, sic mps diodes exhibit nonlinear behaviour when temperature influence is involved [12] what requires the development of dedicated models [10]. moreover, even though switching processes are very short as compared to thermal time constants, they may soon become more important as switching frequencies are increased. until now, compact thermal models (ctms) were obtained either by detailed investigation of the device structure, whose physical and geometrical parameters are often unavailable, either by application of the network identification by deconvolution (nid) method, based on analysis of a single transient temperature measurement processed appropriately [13]. to develop the electro-thermal mps model, a novel model generation approach can be applied which is based on the nid method and time constant spectrum examination. it offers greater simplicity and better numerical properties while preserving the physical meaning of the obtained ctm [14]. the thermal model is coupled with the electrical part to form the complete electrothermal model. the proposed approach is demonstrated for the csd20030 commoncathode dual mps rectifier manufactured by cree. it is demonstrated that the behavioural approach enables the derivation of an accurate unipolar power semiconductor device model without any knowledge about its technological parameters. this has a great practical impact as such data are normally not revealed by device manufacturers. the first sic diodes made available by device manufacturers were subjected to tests which showed serious inconsistencies between simulated and measured behaviour (see [10,15] and also [11]). the research presented in [10, 15] shows that classical shockley’s equation [17] cannot be used for electric domain description. in the authors’ opinion, these inconsistencies may be due to these devices being manufactured as merged pinschottky diodes with additional p-islands [18]. in a regression-based analysis of the mps electro-thermal model [19], the temperature t is linearly or quadraticly related to internal resistance series resistance rs and intrinsic voltage drop vintrsc. analyses of measured quantities variability lead to the following relationship describing the static behaviour of the diode under forward bias: vfwd(ifwd,t) = (p1+p2∙t)∙ln ifwd+ (p3+p4∙t) + ifwd∙p5∙[1+p6∙(t−27°c)+p7∙(t−27°c) 2 ] (1) recent research in vlsi, mems and power devices with practical application to the iter and… 567 where p1,…, p7 are empirical constant coefficients. equation (1) is equivalent to the form suitable for numerical simulations [16]: )( ),()( exp),( tv tvirtvv tvi r fwdfwdsintrscfwd fwdfwd   (2) where vr(t) = p1 + p2 ∙ t, vintrsc(t) = p3 + p4 ∙ t, rs(t) = p5 ∙ [1 + p6 ∙ (t − 27 °c) + p7 ∙ (t − 27 °c) 2 ]. a similar analysis was performed for the reverse bias, leading to the formula (valid almost for all the diodes) irev(vrev,t) = β(t) ∙ exp[vrev ∙ α(t)]. (3) where α(t) and β(t) have linear character. in the case of the antysymmetric current character of temperature influence on behaviour of this diode below and over 75 °c (e.g. for csd04060 diode), an exponential and a hyperbolic relationships had to be used to represent the way the current varies with temperature [16]: 2 7575 2 7575 1 exp),( vevd vcvba tvi revrev    (4) where v75 is the reverse voltage drop vrev at t = 75 °c th tgfv v rev    1 75 (5) and a to h are empirical constant coefficients. the sic mps diode total capacitance is not significant for forward polarization except under very high switching frequencies. however, the junction capacitance for low reverse voltages can be presented using the space charge layer capacitance equation: cj(vd) = cj0 ∙ |vd + vj| 1 − mj (6) where cj0 is the capacitance of an unbiased junction (vd = 0), vj is the junction potential, and mj is the junction grading coefficient. thermal behaviour of semiconductor devices and cooling assemblies can be predicted by compact thermal models (ctms), which can be derived adopting the structural or the behavioural approach [20], [14], [23]. the detailed spice behavioural model of infineon and cree mps devices are presented in [10], [21], [16], [15]. the electro-thermal model is in full agreement with the real mps devices behaviour. the proposed model of sic mps diodes is in full agreement with the real mps devices behaviour in forward and reverse characteristics with the measurements of real devices (fig. 6, fig. 7) and definitely produced much better results than the models provided by the device manufacturers. 568 a. napieralski et al. fig. 6 comparison of the measured sic diode forward characteristics with the proposed model. temperatures: 25°c (green), 75°c (blue), 125°c for c3d04060 (black). y-axis: vfwd [v]; x-axis: ln(ifwd); the measurement deviation is presented using error bars. ([20]). fig. 7 the example dynamic behaviour of c3d04060 diode (source [20]). recent research in vlsi, mems and power devices with practical application to the iter and… 569 3. from dll simulator to dream supercomputer 3.1 introduction – historical outline necessity is the mother of invention. this very well-known saying perfectly renders the idea of dynamically reconfigurable polymorphic supercomputer (dream). the idea was born in 2010, in department of microelectronics and computer science at lodz university of technology in poland. the conception of this idea took place at the same university about ten years earlier, when two scientists from department of molecular physics – working on simulations of some phenomena in polymers – desired to accelerate their calculations. for their simulations they were using dynamic lattice liquid (dll) algorithm, which – as it was expected and finally proved – can be efficiently parallelised. in order to materialize their desire, the physicistsinventors started to draw the schematics of an electronic device – composed of discrete elements – dedicated to execute dll algorithm in a fully parallel manner. soon they realised, that the task is very ambitious and in the era of integrated circuits the approach based on discrete components is not efficient. however, the solution based on dedicated application specific integrated circuits (asics) would be relatively expensive and inflexible. the idea to build a parallel computing machine equipped with a typical microprocessor was also not very promising. the simulations of polymers by means of dll algorithm require many – though very simple – logic units called nodes. each node (representing e.g. one monomer) corresponds to a lattice point of the face cubic centred (fcc) network. assigning one node to one microprocessor would result in a huge number of inefficiently used computing cores. the solution to this stalemate came from the friendly department of microelectronics and computer science and was – as most inventions – very simple: instead of discrete elements, dedicated asics or microprocessors, the reconfigurable devices such as fpgas (field programmable gate arrays) must be used [22, 23]. in such elements it is possible to implement many nodes (lattice points) and to simulate their behaviour simultaneously. in this way the size of the simulator can be significantly reduced. furthermore, the internal architecture of computing elements can be optimized to efficiently achieve the functionality of e.g. simulated monomers. 3.2 first prototype – dll simulator in order to prove the feasibility and efficiency of the proposed solution, both departments – in close cooperation – developed a prototype of a simulator dedicated to dll algorithm. the prototype was named dll simulator. its capacity, defined as a number of implemented nodes, is insufficient to perform any full-scale simulation. the purpose of building this prototype was just to prove the concept of parallel dll algorithm execution in an array of fpgas. dll simulator (fig. 8) is composed of 7 pcbs (printed circuit boards). 6 of them contain 3 fpgas (xc3s4000) each and constitute resources for the simulation nodes. the 7-th board is equipped with 2 fpgas (xc2s150e) and it is responsible for synchronizing the simulation and for the communication of the whole system with a pc (personal computer). this board initializes the simulation and collects the simulation results. the implementation of the dll algorithm in dll simulator is described in details in [22]. below the most general aspects of this implementation are presented in order to simplify the understanding of the dll simulator construction. 570 a. napieralski et al. fpga simulation board fpga fpga fpgafpga fpgafpga control board fig. 8 dll simulator in each fpga on the simulation board a 2×6 array of nodes is implemented, thus the board represents a two-dimensional array containing 36 (6×6) nodes (9). 6 boards correspond to a three-dimensional array containing 216 (6×6×6) nodes. simulation board connections in 2d on pcb cyclic boundary conditions fig. 9 nodes and connections on simulation board recent research in vlsi, mems and power devices with practical application to the iter and… 571 the lattice of nodes in dll simulator represents the face cubic centred (fcc) network with the coordination number of 12. in other words: during the simulation process each node exchanges the data with the closest 12 neighbours: 6 on the same board, 3 on the next board and 3 on the previous board. for this exchange in dll simulator the dedicated wires are designed. although the dll simulator proved the idea of parallel implementation of dll algorithm in an array of fpgas, its construction was fixed and could not be extended to perform the realistic physical or chemical simulations. in practical applications the dll model should have about 10 6 (100×100×100) nodes. 3.3 second prototype – mdll simulator the very promising results of implementation of the dll algorithm in dll simulator encouraged the authors to design a new simulation board, which could constitute a basic building block of the full-scale dll simulator. therefore the second prototype of dll simulator (fig. 10) was designed and developed. fig. 10 mdll simulator 572 a. napieralski et al. the second prototype – mdll simulator finished in 2012 – is composed of 27 simulation boards and one control board serving the same functionality as in dll simulator. it is still too small for practical applications but it allows testing the functionality of simulation board, which can be many times duplicated and used in the construction of a powerful computing machine. each simulation board contains 5 fpgas: 4 of them, called simulation fpgas (xc6slx75), constitute resources for the nodes of the dll algorithm and the 5-th fpga (xc6slx45t), called control fpga, manages the operation of the simulation fpgas (fig. 11). fpga fpga fpga fpga simulation fpga simulation board fpga control fpga fig. 11 simulation board in second prototype the simulation boards are connected in panels. to reduce the number of wires connecting the simulation boards in panel – which is very important in any big computational machine due to the feasibility and reliability reasons – the nodes in the mdll simulator are not directly connected, as it was in dll simulator. the outputs of nodes, which must be transferred outside the fpga, are grouped and transmitted serially. on the receiver side they are deserialised, ungrouped and delivered to appropriate inputs of the destination nodes. sending the outputs and receiving the inputs of each node is performed simultaneously, using dedicated transfer protocol to achieve high data throughput. the implementation of dll algorithm on mdll and dll simulators differs mainly in the organization of nodes in the simulation fpga and in the communication among the nodes placed in different chips. in dll a dedicated one-bit routing path was devoted to each connection among such nodes. in mdll the connections are merged in groups and transferred using fast serial links. the number of nodes in one fpga is configurable. for simple simulations it is possible to reduce the architecture of a node and to include more nodes in one chip. 3.4 dream supercomputer the works on dll and mdll simulators revealed the feasibility and efficiency of the fpga-based dll simulator. it gave an impulse to build such a simulator in a full scale within the confines of bionanopark+, which is currently coming into existence in recent research in vlsi, mems and power devices with practical application to the iter and… 573 lodz. simultaneously, very positive conclusions, which emerged during the dll and mdll development encouraged the constructors of both prototypes to find more applications for the powerful and flexible computing machine being constructed (the dll simulator in bionanopark+ will be composed of over 25 000 fpgas). in this way the idea of dynamically reconfigurable polymorphic (dream) supercomputer appeared. the fundamental aspect of this idea is to provide the scientists with the possibility to use the dream fpgas without the need to define their functionality by means of hdl, as it is in case of dll and mdll. therefore an automatic conversion (compilation) from high level programming language (e.g. c++) to fpga configuration bitstream has been proposed. furthermore, in order to equip the dream supercomputer with some extraordinary features supporting unconventional simulations, the bio-inspired mechanisms are planned to be implemented in it. these mechanisms (such as dynamic routing or self-replacement) will transform the set of fpgas and cables into the fault tolerant, evolvable hardware ready to adopt itself to the problem to be solved. 4. asic design for commercial applications 4.1. industry oriented asic design and research dmcs undertakes numerous industry-oriented activities. application specific integrated circuit (asic) design oriented cooperation with external enterprises begun with series of contracts with tritem microsystems gmbh company, conducted in cooperation with institute of electron technology in warsaw. dmcs team participants had valuable opportunity of working in typical commercially oriented asic design facilities abroad, owned by a major player on a ic-based solution market. such experience is a big asset, especially in country like poland, that generally lacks its own industrial design centres and modern foundries. result of the mentioned cooperation was a set of asics ready to preproduction phase tests. some of these designs were introduced to mass production and are available on market, nowadays. 4.2. continuation of industry-oriented research dmcs staff got insight into work organisation, commercial design resource management and design methodology, during the abovementioned projects. also, our staff had opportunity of undertaking real life design challenges. thus, new ideas emerged during the projects. some of them were checked and introduced during commercial projects, some we evaluated much later, though providing very interesting results. one specific solution introduced during commercially oriented projects is a high voltage unity-gain voltage buffer. it was designed as a hybrid of two typical complementary voltage buffers – source follower and gate follower structures (fig. 12). very useful property set of this new structure enabled application of several untypical signal processing solution in hv integrated environments [24]. the buffer (fig. 13) was granted a patent by polish patent office in 2012 [25]. this is a rare achievement because what was patented was not a layout of the structure but scheme of transistor-level electrical connections and their applications in forming functionality of the buffer. 574 a. napieralski et al. fig. 12 operation rule of the patented unity-gain buffer; a) source follower, b) gate follower, c) combined follower fig. 13 the patented unity-gain high-voltage buffer; a) simplified version, b) high-quality full version when industry oriented projects and asic designs were completed, several design ideas were further studied and advanced. several interesting circuits were elaborated and published in isi list journals. much stress was put on overcoming problems with precise signal processing in highvoltage asics. effective means of current-mode circuitry insertions into voltage-mode signal paths were studied and implemented. it must be stressed that simplicity and recent research in vlsi, mems and power devices with practical application to the iter and… 575 precision of devised solutions was possible due to application of previously patented voltage buffer. fig. 14 voltage/current/voltage converter for current-mode circuitry integrated into high-voltage voltage-mode signal paths fig. 15 current-mode trapezoidal waveform generator and edge-rounded for high-voltage systems [29], based on unity-gain buffer [24] and current-mirrors (shown as boxes) set of simple but efficient voltage/current and current/voltage integrated converters was introduced [26] (and presented in fig. 14) along with several function current-mode function blocks applicable to high-voltage cmos and soi integrated systems. these function blocks include current-mode versions of waveform invertors, amplifiers and dclevel shifters [26], [27]. they all can be placed inside high-voltage signal paths owing to design of voltage/current/voltage conversion system with use of no more than the devised 576 a. napieralski et al. buffer combined with simple but efficient voltage/current/voltage converter tailored precisely for cmos/soi integrated systems [27]. fig. 16 current-mode high-voltage switches for voltage (a, b) and current (c) applications set of current-mode trapezoidal waveform generators with fully controlled waveform parameters were studied and published [28]. universal current-mode low-voltage and highvoltage trapezoidal waveform generators with edge-rounding functionality were invented and published [29]. this circuitry makes possible precise control over frequency, voltagerange and slew-rate control of the waveform in high-voltage integrated systems with use of nothing more than unity gain buffers and current mirrors (fig. 15). for high-voltage signal switching applications, set of application-optimized high-voltage current-controlled switches for voltage and current signal paths has been devised and studied [30]. some of them are presented in fig. 16. 4.3. continuation of industry-oriented research dmcs continues commercially-oriented asic design activities. proven and new industry entities enter various cooperation schemes with our department. together with institute of electron technology and tritem microsystems gmbh, our department has applied for funds to build and test prototype system for remote and wireless identification, access control and supervisory. several previously designed circuits are planned to be used for design of asic circuits related to this activity. dmcs has also cofounded a consortium with astri polska ltd and center of space research of polish academy of sciences, and has been applying for european space agency (esa) funds to build asics for use in space industry. esa expressed its interest and the consortium has been granted initial funds for in-depth feasibility study on a specialized asic for space applications. also, a three-year scientific project related to the study on modelling and simulation of the electro-magnetic phenomena in modern 3d integrated systems has been recently granted. though this is a scientific project, it is expected to implement several functional blocks initially developed for commercial applications. dmcs takes part in a number of projects at application stage where it is expected to design, implement and test various complex systems in the form of asics. recent research in vlsi, mems and power devices with practical application to the iter and… 577 5. development of diagnostic use cases for the iter organisation 5.1. the iter organisation diagnostic and control systems as the global energy consumption increases, the provision of efficient and clean energy sources becomes an urging necessity. one of the most promising way of energy production is the use of the nuclear fusion in thermonuclear reactors, such as tokamaks in which the plasma is confined in a toroidal shape using magnetic fields. both the substrates and products of the deuterium-tritium fusion are not radioactive and are environmentally friendly. the project of building the world’s largest thermonuclear reactor is called iter. it is a result of international cooperation of the european union, india, japan, korea, russia, china and the united states. it is built on the experience gained from the latest experiments, like joint european torus (jet) and tore supra and it will be the most technologically advanced tokamak so far. it is assumed to be able to produce 500 mw of energy with efficiency coefficient of at least 10. the machine is now being constructed at iter, cadarache, france. as the site construction process progresses, the need for development of sophisticated control and monitoring system is emerging. the technology being the result of the iter project will be able to be commercialized in 2050, but the tokamak assembly should start in 2015 and till then the concept for its instrumentation shall be finished. building and operating of the machine requires multidisciplinary effort not only by the physicists but also by the engineers. since eu tends to reduce co2 production the new technology of energy production is especially crucial. the control systems of modern tokamaks utilize a variety of telecommunication standards. jet, the largest fusion device in europe, is operated via an old atm network. tore supra is backboned by the scramnet real-time shared memory and the vme standard. in both machines the data acquisition is performed with pxi, eurocard, cpci, vme and advancedtca (atca) systems. among these architectures, the pci extensions for instrumentation (pxi) gained popularity and is also considered one of the fundamental standards of the iter project. the i&c systems of iter require an architecture providing a higher reliability, availability, maintainability and inspectability (rami) than can be achieved with pxi. the xtca (atca and mtca) standards [31] [32] [33] [34] [35] seem to fulfil this requirement and are being successively added to the iter pcdh catalogue. the advantage of the pxi architecture (national instruments) is wide availability of various i/o and processing modules, especially on markets not reached by competitive technologies. also the labview graphical programming environment is easy to use for people with limited programming experience. although the pxi architecture is widely adopted and well tested, it also has some drawbacks:  weak support for gnu/linux and other unix-like operating systems,  significant limitation on type and number of backplane interfaces,  no possibility of providing an effective redundancy scheme,  lack of support for hardware interlock mechanisms. the atca standard was developed for demanding telecommunication applications and later adapted for physics experiments. it concentrates on providing powerful computing 578 a. napieralski et al. platform with high reliability. due to high price of standard compliant components, it gains popularity slowly, mainly in the usa and europe. the authors have gained experience in the field of atca-based systems by building a proof-of-concept daq system for iter composed of off-the-shelf commercial components. the last considered standard is the mtca. this standard is similar to pxi, however it offers better performance and flexibility. the advanced mezzanine card (amc) modules, plugged into mtca shelf may contain a variety of backplane interfaces, support hot-swap mechanism and offer an advanced monitoring and module management capabilities. data transmission between the amc modules takes place over gigabit ethernet, pci express, sata, serial rapidio and similar high-speed serial interfaces. due to high reliability and cost-effectiveness the mtca-based systems are gradually gaining popularity in the industrial and scientific control systems [36] [37] [38] [39]. the potential of mtca standard was already noticed by the world’s leading physics laboratories. in response to this, the pci industrial computer manufacturers group (picmg) announced the establishment of the xtca for physics coordinating committee, in 2009. the sub-committee provides extensions and modifications to the plain telecommunication standard in order to adapt it for experimental research machines and detectors in such diverse fields as astronomy, high energy, photon, fusion and medical physics. the resulting subsidiary specification, the mtca.4, is now under active development and receives contributions from a number of well-known laboratories and institutions such as iter, desy, cern and many others. members of the dmcs team are also involved in development of mtca.4 standard working actively in picmg xtca for physics since 2009. the mtca.4 specification introduces many improvements especially important for iter [52]. for example, it enables some global scope signals (e.g. timing events, interlocks, additional clocks) to be transferred freely between cooperating modules. also, it introduces the micro rear transition module (mrtm) which can effectively double the space available on the module and allows connecting signals from both sides of the chassis. the picmg expects that the mtca.4 will be the common standard for physics experiments of the future. the authors believe that this standard can already offer a wellsuited complete solution for iter, although similar systems have not been built before using this architecture. the iter tokamak requires more than 150 various plant systems. most of them are part of the i&c subsystem that can be logically divided into two layers: central coordination and local plant systems. the primary goal of iter i&c system is to provide a fully integrated and automated control for the thermonuclear reactor. the most important part of i&c is the data acquisition system, which should collects signals from large number of digital/analogue channels (about 4000) and digital cameras (about 200). since these signals come from different physical sources, they span a large range of different sampling frequencies (from khz to ghz), resolutions (from 8 to 24 bits) and signal conditioning techniques (table 1). therefore the task of developing such data acquisition system is very demanding and requires pre-processing and processing of data on various hardware platforms (fpga, gpu, cpu, etc.). recent research in vlsi, mems and power devices with practical application to the iter and… 579 table 1 summary of example signal sources and required data processing measurement group data io signal processing magnetics 1400 adc (1 ms/s) 240 adc (10 ms/s) fpga / gpu / cpu dosimetry and fusion products 50 adc (100 ms/s) fpga / cpu vis/ir cameras 24 cameras (1 khz frame rate – 8gb/s per camera) fpga / cpu optical (ex. lidar) 150 adc (20 gs/s) fpga / gpu imaging spectroscopy ~200 cameras and detector arrays (7 gb/s) fpga / cpu spectroscopy and neutral particle analyzer ~50 adc (1 gs/s) fpga / cpu bolometers ~500 adc (1 ms/s) fpga / cpu 5.2. diagnostic use cases most of the extremely complex iter diagnostics systems are provided by the domestic agencies (das) and their partners. on their demand the io has created several diagnostics use case examples to enhance the understanding of diagnostics plant system i&c and the associated deliverables. the use cases come complete with documentation and implementation, further helping the das, their suppliers and diagnostic responsible officers to meet the iter diagnostics requirements [40]. the department of microelectronics and computer science has prepared two of such use cases, one in atca and one in mtca.4 form factor. 5.2.1. data acquisition use case in the atca form factor the data acquisition system designed and built by the authors is based on the atca and amc standards. all the elements that comply with those standards are off-the-shelf devices. no in-house atca or amc hardware has been made. this is due to iter policy and is to ensure that such equipment is always available and proper tech support is provided for it. the system block diagram is presented in figure 17 [41]. all the data communication in the system is based on the 1 and 10 gigabit ethernet. the input of the system consists of a number of tews tamc900 modules. every card is divided into two logical submodules each of them sampling up to four channels with a frequency of up to 50 ms/s. two amc modules reside in one emerson atca-7301 carrier board that connects to an emerson atca-f120 10 gb ethernet switch over backplane. the receiving side of the system consists of an emerson atca-7360 computation blade where the daq server runs. the received stream of data is forwarded to an external data archiver (backup system) via a 10 gbe connection. simultaneously, data is sent to a tesla s1070 computation blade via a pcie x8 connection. in case of failure of the 10 gbe uplink to the data archiver or pcie connection to the computation blade, data is stored in a dual hdd buffer. the hdd buffer is configured in a software raid 0 configuration. the data is sent from the hdd buffer immediately when the connectivity is recovered. the photograph of the system is presented in figure 18. the system is able to continuously process and forward to the archiving system the 800 mb/s data coming from 5 modules simultaneously without dropping any data. 580 a. napieralski et al. fig. 17 block diagram of the daq system with estimated throughputs. diagnostics systems based on the direct imaging are now widely used in tokamaks for both the real-time plasma control and off-line physics studies. the visible light emitted by the plasma can be used to monitor the plasma position during the operation, as well as to detect some transient events, such as flying debris that could degrade or interrupt the plasma unexpectedly if not mitigated. the infrared light is also very important to measure the surface temperature of the plasma facing the components subject to high heat fluxes (several mw/m 2 ) and particle fluxes. the early detection of overheating areas, called hot spots, is of the primary importance for the protection of the machine during the plasma operation to avoid component damage, such as melting, and even leaks of the water-cooling systems installed behind the first wall components. to this end, images are analysed in real-time (up to several ms) to detect, identify and recognize abnormal events which will be provided for the central control systems. image processing techniques are used to recognize spatiotemporal patterns of the expected thermal events (i.e. qualitative analysis). then, adequate actions can be taken to decrease the components overheating or to change the plasma state to the safest conditions. considering the high complexity of the machine geometry and plasma equilibrium, all of the in-vessel surface must be monitored with a resolution high enough to detect every local hot-spot of at most several centimetres in diameter. in the case of iter, this means that the cameras used for machine protection function must cover up to 640 m 2 from a distance up to 10 meters. cameras are also used for the understanding of plasma-wall interactions, e.g. to study the turbulence in the edge plasma, close to the vessel. in this case, the temporal resolution can be very high (200 kfps) and the system must support the streaming as well as the access of large amount of imaging data. recent applications of imaging networks in tokamak show that combination of data from several cameras is very promising for the 3d recent research in vlsi, mems and power devices with practical application to the iter and… 581 volume reconstruction (e.g. tomography), provided that data are well calibrated and synchronized. fig. 18 hardware installed in the iter cubicle – front view 5.2.2. image diagnostics use case in the mtca.4 form factor an image acquisition system (ias) is composed of a digital camera connected to a frame grabber card, image processing module and data transmission system [42][43][44][45][49]. the acquired images are sent to the image processing system. the system distributes data for further processing and archiving. the processed data are sent using low-latency 582 a. napieralski et al. connection to the machine control or protection system [53]. the buffered images with attached metadata are sent for archiving via the high-throughput connection. the metadata describes collected data (image resolution, bit depth, frame rate, etc.) and precisely defines when the images were created. the global synchronization network delivers a reference clock and a trigger signal that define when the images are acquired and allow calculating timestamps. a block diagram of ias is presented in fig. 19. the ias based on mtca.4 specification consists of:  digital cameras connected to frame grabber modules,  camera link receiver mezzanine module [54],  frame grabber modules with local processing power,  synchronization and timing distribution module connected to time communication network (tcn),  image processing module based on external industrial computers with gpus,  high-throughput network links to data archiving network (dan) and synchronous data network (sdn). fig. 19 a block diagram of ias implemented in mtca.4. the flow of the digital data starts with the camera. data from the camera is transferred to a dedicated frame grabber module, realized as an advanced mezzanine card (amc) hosted in the mtca.4-compliant shelf. the shelf is connected to an external cpu module using the pcie cable link. video data from the frame grabber is transferred using a dma directly to the host computer memory. from there, the data are made available through two 10 gb/s ethernet connections. the ias is installed in the iter codac technical room. the mch natmchphys fabricated by nat with the rtm pcie uplink (pcie x4, gen. 2) was used. the maximum theoretical bandwidth of the pcie x4, gen. 1 connection on the frame grabber card is 8 gb/s. to evaluate the performance of the dma module on the frame recent research in vlsi, mems and power devices with practical application to the iter and… 583 grabber card, the switch hierarchy, the root complex and the software driver a special performance testing module, sending the test data at the maximum possible speed has been implemented in the firmware. using this module, the maximum achievable data rate from the single module has been measured as 800 mb/s. this result is fully satisfactory for the system with a single camera as it is equal to the cameralink theoretical maximum of 6.4 gb/s. the link between the pcie switch on the mch and the external cpu is currently limited to the pcie x4, gen. 2. this allows transferring payload data with a theoretical throughput up to 1.6 gb/s (12.8 gb/s). in this configuration image acquisition can be done from two frame grabber cards running almost at full link saturation. the system with two frame grabber cards has also been tested. in this case, the maximum throughput from the single amc module was limited to about 6.2 gb/s. one of the key issue in integration of all control and diagnostic subsystems is distribution of reference clock and precise synchronization. in the tokamak the reference time is distributed via dedicated time communication network (tcn) using the ieee 1588-2008 protocol, called precision time protocol (ptp). the assumed synchronization accuracy that is ensured by this solution is 50 ns rms. the application of the ptp-based network causes that every subsystem needs to be equipped with timing receiver capable of receiving reference time from tcn network, generating synchronous clock and trigger signals and provide support for timestamping of external signals. as there are no commercially available solutions that may be used at mtca-based iter diagnostic systems, it was necessary to design new mtca.4-compliant timing module providing support for the ptp and ensuring required synchronization accuracy [46]. the module is based on a recent spartan-6 fpga circuit from xilinx. the programmable device hosts complex microprocessor system built around the microblaze core. the firmware image is too large to fit in the fpga’s integrated memory and is hence stored and executed in the external ddr2 sdram. the fpga bitstream is loaded from the external spi flash memory. the ram memory is preloaded on system start-up using contents of the spi flash memory. the hardware structure of the ptm module is presented in 20. the ptm-1588 module accesses the timing network using gigabit ethernet interface using the regular 8p8c modular connector. the module not only synchronizes its internal counters with the ptm master, but also provides synchronized clocks. the module reference frequency is generated by the oven controlled voltage controlled crystal oscillator (ocvcxo). the clock phase correction is achieved by manipulation of the ocvcxo frequency. its frequency can be shifted in 10 ppm range using an external tuning voltage provided by the fpga controlled dac. the module produces 100 mhz clock and pulse per second (pps) signal on the front panel output and both 10 mhz and 100 mhz on the backplane. apart from that, there are 8 programmable lines on the backplane and 2 on the front panel, that can be used for generation of future time events and timestamping of external signals. the module is configured and operated mainly by means of the pcie interface. the board is manageable through the intelligent platform management interface (ipmi) protocol thanks to custom developed module management controller (mmc), analogous to the one presented in [47], [48], [50], [51]. this subsystem is responsible for monitoring the module health and maintaining its state. the ptm-1588 board has been tested at iter, using the gpssynchronized grandmaster clock symmetricom xli and three cascaded hirschmann mar1040 switches. at the same time, the pps output of the grandmaster clock is connected to the frontpanel input of the board using the 50 ohm coaxial cable. the delay of the cable, input and 584 a. napieralski et al. output drivers has been calibrated by connecting the pps output to fte input via a cable and timestamping it locally. the pps error has been measured for 237230 samples (the test lasted 2.7 days). the rms value of the error was 11.7 ns. fig. 20 precise timing module – hardware structure 6. conclusions in this paper some chosen research topics conducted in dmcs tul have been presented. at first several mems (micro electro-mechanical systems) devices have been analysed and simulated. new modelling methodologies have been proposed and some new device models (microbolometer and micromembrane) have been invented. next the new model of sic mps (merged pin-schottky) diodes has been proposed. to develop the electro-thermal mps model, a novel model generation approach has been applied which is based on the nid method and time constant spectrum examination. it offers greater simplicity and better numerical properties while preserving the physical meaning of the obtained ctm. the thermal model is coupled with the electrical part to form the recent research in vlsi, mems and power devices with practical application to the iter and… 585 complete electro-thermal model. the proposed approach has been demonstrated for the csd20030 common-cathode dual mps rectifier manufactured by cree. the new proposed model of sic mps (merged pin-schottky) diodes is in full agreement with the real mps devices. these works will be continued in the frame of the european project adept (advanced electric powertrain technology). its aim is to produce a virtual development environment for electric propulsion systems for evs and hevs (electrical and hybrid electrical vehicles). it is expected that sic devices will be heavily applied in these applications to reduce power loss and cooling needs, thus enabling an extension of the vehicle’s operating distance range. however, reliable device models are needed for efficient circuit design and optimization. the idea of dynamically reconfigurable polymorphic supercomputer (dream) was born in dmcs in 2010. the simulations of polymers by means of dll algorithm require many logic units called nodes. instead of discrete elements, dedicated asics or microprocessors, the reconfigurable devices such as fpgas (field programmable gate arrays) have been used. the fundamental aspect of this idea is to provide the scientists with the possibility to use the dream fpgas without the need to define their functionality by means of hdl, as it is in case of dll and mdll. therefore an automatic conversion (compilation) from high-level programming language (e.g. c++) to fpga configuration bit-stream has been proposed. dmcs undertakes numerous industry-oriented activities. several interesting circuits were elaborated and published in isi list journals. dmcs continues commercially-oriented asic design activities. proven and new industry entities enter various cooperation schemes with our department. together with the institute of electron technology and tritem microsystems gmbh, our department has applied for funds to build and test prototype system for remote and wireless identification, access control and supervisory. several previously designed circuits are planned to be used for design of asic circuits related to this activity. dmcs has also cofounded a consortium with astri polska ltd and space research centre of the polish academy of sciences, and has been applying for european space agency (esa) funds to build asics for use in space industry. esa expressed its interest and the consortium has been granted initial funds for in-depth feasibility study on a specialized asic for space applications. a three-year scientific project with potential commercial applications has been recently granted to dmcs. its research part focuses on modelling and simulation of electro-magnetic phenomena in modern 3d integrated systems. practical applications will be driven by the implementation of several function blocks designed to fulfil commercial demands. as the last point the project of building the world’s largest thermonuclear reactor – iter has been presented. the control systems of modern tokamaks utilize a variety of telecommunication standards. dmcs proposed to apply xtca (atca and mtca) standards in order to fulfil the requirement of the project. for the real-time plasma control and off-line physics studies, a diagnostics system based on direct imaging has to be developed. the visible light emitted by the plasma can be used to monitor the plasma position during operation as well as to detect some transient events, such as flying debris that could degrade or interrupt the plasma unexpectedly if not mitigated. the infrared light is also very important to measure the surface temperature of the plasma facing the components subject to high heat fluxes (several mw/m 2 ) and particle fluxes. images must be analysed in real-time (up to several ms) to detect, identify and recognize abnormal events which information will be provided for the central control systems. cameras are also used for the understanding of plasma-wall interactions, e.g. to study the turbulence in 586 a. napieralski et al. the edge plasma close to the vessel. in this case, the temporal resolution can be very high (200 kfps) and the system must support the streaming as well as the access to large amounts of imaging data. recent applications of imaging networks in tokamaks show that a combination of data from several cameras is very promising for the 3d volume reconstruction (e.g. tomography), provided that data are well calibrated and synchronized. references [1] esteve d., alderman j., cane c., courtois b., glesner m., napieralski a., rencz m., samitier j., troccaz j., cinquin p., dillman j.: “basic research for microsystems integration”, cepadus-editions, toulouse, france, 1997, s. 266 isbn 2-85428-465-8. [2] bhan r. k., saxena r. s., jalwania c. r., and lomash s. k.: “uncooled infrared microbolometer arrays and their characterisation techniques”, def. sci. j.59, pp. 580–590 (2009) [3] ansys® workbench, http://www.ansys.com [4] comsol® multiphysics, http://www.comsol.com [5] zajac p., szermer m., maj c., zabierowski w., melnyk m., matviykiv o., napieralski a., lobur m.: “study of dynamic thermal phenomena during readout of uncooled titanium-based microbolometer”, memstech, 16-20 april 2013, polyana, ukraine, pp. 40-42 [6] janicki m., zajac p., szermer m., napieralski a.: “compact thermal modeling of microbolometers”, 15th international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 7-9 april 2014, ghent, belgium, pp. 1-4 [7] maj c., olszacki m., al bahri m., pons p.: “analytical model of electrostatic membrane-based actuators”, 10th international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 26-29 april 2009, delft, netherlands, pp. 1-6 [8] suni t.: “direct wafer bonding for mems and microelectronics”, vtt publications, espoo, finland, 2006 [9] m. bhatnagar and b. j. baliga, “comparison of 6h-sic, 3c-sic, and si for power devices,” ieee trans. electron devices, vol. 40, no. 3, pp. 645–655, 1993. [10] zubert m., napieralska m., jabłoński g., starzak ł., janicki m., napieralski a.: static electro-thermal model of sic merged pin schottky diodes. w: 10th international seminar on power semiconductors isps’10, prague, czech republic, 1-3 sep 2010, prague, ed. v.benda, 2010, s.282. pp.227-232. [11] j. zarebski and j. dabrowski, “spice modelling of power schottky diodes,” int. j. numer. modelling: electron. networks, devices and fields, vol. 21, no. 6, pp. 551–561, 2008. [12] w. janke and a.hapka, “nonlinear thermal characteristics of silicon carbide devices,” mater. sci. eng.: b, vol. 176, no. 4, pp. 289–292, 2011. [13] v. szekely, “on representation of infinite-length distributed rc one-ports,” ieee trans. circuits syst., vol. 38, no. 7, pp. 711–719, 1991. [14] m. janicki, j. banaszczyk, b. vermeersch, g. de mey, and a. napieralski, “generation of reduced dynamic thermal models of electronic systems from time constant spectra of transient temperature responses,” microelectron. rel., vol. 51, no. 8, pp. 1351–1355, 2011. [15] lukasz starzak, mariusz zubert, marcin janicki, tomasz torzewicz, malgorzata napieralska, grzegorz jablonski, andrzej napieralski. behavioral approach to sic merged diode electro-thermal models generation. ieee transaction on electron devices. february 2013, volume 60, no 2:, pp. 630-638 [16] zubert, m.; starzak, l.; jablonski, g.; et al. an accurate electro-thermal model for merged sic pin schottky diodes. microelectronics journal volume: 43 issue: 5, 312-320, may 2012. [17] v. zeng. (2012, jan. 6). high efficiency system design with infineon power discrete-infineon coolmostm, optimostm, igbt and sic diode. infineon. [online]. available: www.infineon.com/cms/cn/corporate/ promopages/csr/8.ppt [18] zubert m., janicki m., napieralska m., jabłoński g., starzak ł, napieralski a.: "behavioural electrothermal modelling of sic merged pin schottky diodes". scientific computing in electrical engineering scee 2010. series: mathematics in industry, vol. 16, part iii. subseries: the european consortium for mathematics in industry. eds.: michielsen, bastiaan; poirier, jean-rené. 1-st edition., 2011, springer-verlag 2012, pp. 223-231 [19] sabry m.-n., “compact thermal models for electronic systems,” ieee trans. compon. packag. technol., vol. 26, no. 1, pp. 179–185, 2003. http://www.comsol.com/ recent research in vlsi, mems and power devices with practical application to the iter and… 587 [20] m. zubert, l. starzak, g. jabłoński, m. napieralska, m. janicki, a. napieralski. „novel spice dynamic model of sic merged pin schottky diodes”. 2011 proceedings of the 18th international conference mixed design of integrated circuits and systems (mixdes), 16-18 june 2011, pp. 541 – 544 [21] janicki, z. kulesza, t. torzewicz, and a. napieralski, “automated stand for thermal characterization of electronic packages,” in proc. 27th ieee semiconductor thermal measurement, modeling and management symp., san jose, ca, 2011, pp. 199–202. [22] jung j., polanowski p., pakuła t., kiełbik r., napieralski a., ulański j., „hardware implementation of dynamic lattice liquid model as a way of investigation of very complex molecular systems”, proceedings of the 6th hellenic conference on polymers, patras, greece, november 2006, pp. 285-286 [23] polanowski p., jung j., kiełbik r.: “special purpose parallel computer for modelling supramolecular systems based on the dynamic lattice liquid model”, computational methods in science and technology 16(2), 2010, issn 1505-0602, pp. 147-153. [24] jankowski m., napieralski a.: high-voltage high input impedance unity-gain voltage buffer, microelectronics journal, 2013, vol. 44, no. 7, p. 576-585 [25] patent issued by polish patent office “uklad bufora napieciowego,” (eng. “voltage buffer circuit”), inventor: jankowski mariusz, designee: automatix spółka z o.o., exclusive right kind and number wyn: (11) 212837, granted: 19 june 2012, published: 22 june 2012. [26] jankowski m., napieralski a.: novel structure of cmos voltage-to-current converter for high voltage applications, nanotech conference & expo 2012, june 18-21 2012, santa clara, california, usa [27] jankowski m., napieralski a.: current-mode signal processing implementation in hv soi integrated systems, microelectronics journal, volume 45, issue 7, july 2014, pages 946–959 [28] jankowski m., jabłoński g.: adjustable generator of edge-rounded trapezoidal waveforms. international journal of electronics and telecommunications, 2012, vol. 58, no. , p. 213-218 [29] jankowski m., napieralski a.: high-voltage trapezoidal waveform generator with edge-rounding functionality implementations, proceedings of the 21st international conference mixed design of integrated circuits & systems (mixdes), 19-21 june 2014, pp. 224 – 229 [30] jankowski m., napieralski a.: current-controlled switches for hv soi processes, microelectronics journal, volume 45, issue 7, july 2014, pages 931–945 [31] s. simrock, l. bertalot, m. cheon, c. hansalia, d. joonekindt, g. jablonski, y. kawano, w.-d. klotz, t. kondoh, t. kozak, p. makijarvi, d. makowski, a. napieralski, m. orlikowski, m. park, s. petrov, a. piotrowski, p. predki, i. semenov, d. shelukhin, v. udintsev, g. vayakis, a. wallander, m. walsh, s. wu, s. yang, and i. yonekawa, “evaluation of the atca fast controller standard for iter diagnostics,” fusion engineering and design, vol. 87, no. 12, pp. 2100 – 2105, 2012. [32] d. makowski, w. koprek, t. jezynski, a. piotrowski, g. jablonski, w. jalmuzna, k. czuba, p. predki, s. simrock, and a. napieralski, “prototype real-time atca-based llrf control system,” nuclear science, ieee transactions on, vol. 58, no. 4, pp. 1553 –1561, aug. 2011. [33] a. piotrowski and d. makowski, “pciexpress hot-plug mechanism in linux-based atca control systems,” wroclaw, poland, june 2010. [34] d. makowski, w. koprek, t. jezynski, a. piotrowski, g. jablonski, w. jalmuzna, and s. simrock, “interfaces and communication protocols in atca-based llrf control systems,” in nuclear science symposium conference record, 2008. nss ’08. ieee, oct. 2008, pp. 32–37. [3] [35] d. makowski, w. koprek, t. jezynski, a. piotrowski, g. jablonski, w. jalmuzna, k. czuba, p. predki, s. simrock, and a. napieralski, “prototype real-time atca-based llrf control system,” nuclear science, ieee transactions on, vol. 58, no. 4, pp. 1553 –1561, aug. 2011. [36] j. branlard, g. ayvazyan, v. ayvazyan, m. k. grecki, m. hoffmann, t. jezynski, i. m. kudla, t. lamb, f. ludwig, u. mavric, s. pfeiffer, h. schlarb, c. schmidt, h. c. weddig, b. yang, k. oliwa, w. wierba, w. cichalewski, k. gnidzinska, w. jalmuzna, d. r. makowski, a. mielczarek, a. napieralski, p. perek, a. piotrowski, t. pozniak, k. przygoda, s. korolczuk, j. szewinski, p. barmuta, s. b. habib, l. butkowski, k. czuba, m. grzegrzolka, e. janas, j. piekarski, i. rutkowski, d. sikora, l. zembala, and m. zukocinski, “the european xfel llrf system,” in international particle accelerator conference, new orleans, usa, may 2012. [37] a. mielczarek, d. makowski, g. jablonski, a. napieralski, p. perek, p. predki, t. jezynski, f. ludwig, and h. schlarb, “utca-based controller,” in mixed design of integrated circuits and systems (mixdes), 2011 proceedings of the 18th international conference, june 2011, pp. 165 –170. [38] i. rutkowski, k. czuba, d. makowski, a. mielczarek, h. schlarb, and f. ludwig, “vector modulator card for mtca-based llrf control system for linear accelerators,” nuclear science, ieee transactions on, vol. 60, no. 5, pp. 3609–3614, oct 2013. 588 a. napieralski et al. [39] d. makowski, g. jablonski, p. perek, a. mielczarek, p. predki, h. schlarb, and a. napieralski, “firmware upgrade in xtca systems”, nuclear science, ieee transactions on, vol. 60, no. 5, pp. 3639–3646, oct 2013. [40] s. simrock, l. abadie, r. barnsley, l. bertalot, p. makijarvi, j. y. journeaux, r. reichle, d. stepanov, g. vayakis, i. yonekawa, a. wallander, m. walsh, p. patil, d. makowski, and v. martin, “diagnostics use case examples for iter plant instrumentation,” in international conference on accelerator and large experimental physics control systems, icalepcs, 2013, june 2013. [41] a. piotrowski, m. orlikowski, t. kozak, p. predki, g. jablonski, d. makowski, and a. napieralski, “performance optimisation in software for data acquisition systems,” mixed design of integrated circuits and systems (mixdes), 2011 proceedings of the 18th international conference, pp. 189 – 194, june 2011, isbn 978-1-4577-0304-1. [42] a. mielczarek, p. perek, d. makowski, m. orlikowski, g. jablonski, and a. napieralski, “amc frame grabber module with pcie interface,” mixed design of integrated circuits and systems (mixdes), 2013 proceedings of the 20th international conference, pp. 137 – 142, june 2013, isbn 978-83-63578-00-8. [43] p. perek, m. orlikowski, g. jablonski, a. mielczarek, d. makowski, k. zagar, and s. isaev, “software components of mtca-based image acquisition system,” mixed design of integrated circuits and systems (mixdes), 2013 proceedings of the 20th international conference, pp. 137 – 142, june 2013, isbn 978-83-63578-00-8. [44] perek p., wychowaniak j., makowski d., orlikowski m., napieralski a., “image acquisition and visualisation in doocs and epics environments”, int. j. microelectron. comput. sci., 2012, vol. 3 no. 2, pp. 60-66, issn 2080-8755 [45] mielczarek a., makowski d., jablonski g., perek p., napieralski a., “image acquisition module for utca systems”, mixed design of integrated circuits and systems (mixdes), 2012 proceedings of the 19th international conference, 24-26 may 2012, pp. 156-160, isbn 978-1-4577-2092-5 [46] g. jabłoński, d. makowski, a. mielczarek, m. orlikowski, p. perek, a. napieralski, p. makijarvi, and s. simrock, “ieee 1588 time synchronization board in mtca.4 form factor,” in real time conference (rt), 2014 19th ieee-npss, 2014. [47] p. perek, a. mielczarek, p. predki, d. makowski, and a. napieralski, “module management controller for microtca-based controller board,” international journal of microelectronics and computer science, vol. 3, no. 1, 2012, pp. 25–31, 2012, issn 2080-8755. [48] d. makowski, a. mielczarek, p. perek, m. fenner, f. ludwig, m. uros, j. szewinski, and a. schlarb, h. napieralski, “standardized solution for management controller for mtca.4,” in real time conference (rt), 2014 19th ieee-npss, 2014. [49] perek p., “high-performance image processing system for plasma diagnostics”, proceedings of the xv international phd workshop owd 2013, wisła, poland, pp. 328-331 [50] t. kozak, p. prędki, d. makowski, "real-time ipmi protocol analyzer," nuclear science, ieee transactions on , vol.58, no.4, pp.1857,1863, aug. 2011 [51] p. prędki, d. makowski, a. napieralski, "intelligent platform-management controller for low-level rf control system atca carrier board," nuclear science, ieee transactions on , vol.58, no.4, pp.1538,1543, aug. 2011 [52] d. makowski, a. mielczarek, p. perek, a. napieralski, l. butkowski, j. branlard, m. fenner, h. schlarb, b. yang, " high-speed data processing module for llrf" in real time conference (rt), 2014 19th ieeenpss, 2014. [53] d. makowski, a. mielczarek, p. perek, g. jabłonski, m. orlikowski, a. napieralski, p. makijarvi, s. simrock, v. martin, "high-performance image acquisition and processing system with mtca.4" in real time conference (rt), 2014 19th ieee-npss, 2014 [54] a. mielczarek, d. makowski, g. jabłoński, p. perek, m. orlikowski, "fmc video acquisition module with camera link interface", international journal of microelectronics and computer science 2012, volume 3, number 3, issn: 2080-8755 facta universitatis series: electronics and energetics vol. 33, no 1, march 2020, pp. 73-82 https://doi.org/10.2298/fuee2001073k © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd numerical compact modeling approach of dispersive magnetoelectric media based on scattering parameters  miloš kostić 1 , nebojša dončov 2 , zoran stanković 2 , john paul 3 1innovation center of advanced technologies, niš, serbia 2faculty of electronic engineering, university of niš, serbia 3electromagnetics scientist, nottingham, united kingdom abstract: z-tlm based compact modeling approach for dispersive media exhibiting magnetoelectric coupling is presented in this paper. scattering parameters based representation of considered medium is created in a form of compact model by extracting effective electromagnetic parameters using a retrieval method, and implementing them into a non-uniform tlm grid. proposed approach is illustrated here on the example of dispersive isotropic chiral medium modeling. key words: dispersive media, compact models, scattering parameters, z-tlm method, retrieval method, non-uniform mesh. 1. introduction numerical modeling techniques nowadays represent important tools in a research process of complex materials especially when it is not possible or worthwhile to solve a problem with analytical approach. two most used discrete time domain numerical techniques, the finite difference time domain (fd-td) method [1] and transmission line matrix (tlm) method [2] are very suitable for solving problems of electromagnetic (em) wave propagation through complex structures and media. even though the fd-td method is often favored by researchers, the tlm method offers in some cases a more straightforward approach for describing and modeling different discontinuities, internal boundaries, propagation in dispersive media etc. this is a result of tlm feature that both electric and magnetic field components are solved in center of the tlm cell simultaneously without a need for temporal and spatial averaging. modifying and extending tlm method with z transformation techniques create valuable means for an efficient time domain modeling of linear isotropic and anisotropic, bi-isotropic, nonlinear, quantum, chiral materials and metamaterials [3-7]. this so-called received march 21, 2019; received in revised form june 18, 2019 corresponding author: miloš kostić innovation center of advanced technologies, 18000 niš, serbia (e-mail: r.i.p.romeo@gmail.com)  74 m. kostić, n. donĉov, z. stanković, j. paul z-tlm method supports implementation of the debye, drude, lorentz and other dispersion models along with specific methods which allow for describing materials with complex frequency dependencies. compact models allow for complex structure, artificial or multilayered material to be represented as one effective material block via scattering parameters which to some degree simplifies numerical analysis and modeling process. in addition, compact models can be also used to reduce computational and time costs of the simulation by using a much coarser mesh for modeling of thin material panel, where instead of direct modeling by a fine mesh the material is replaced with single interface between two tlm cells [8,9]. in this paper, a formulation based on nonlinear constitutive relations and discretization of maxwell’s equations which allows implementation of most general properties of dispersive and anisotropic materials into the z-tlm non-linear grid, is described. procedures for applying tlm method in modeling of dispersive and general anisotropic media inside of non-uniform mesh are given in [9-11]. z-tlm based approach presented in [12,13] is here expanded to allow modeling of dispersive materials with magnetoelectric coupling characteristics while preserving the advantage of including the arbitrary frequency dependencies of modeled material em parameters, i.e. these dependences do not have to necessarily follow some of the known dispersion models. effective em parameters which are used to characterize materials with magnetoelectric coupling are extracted from s parameters through retrieval procedure [14-16], approximated through the vector fitting (vf) method [17-19] and then used to form a compact model after applying the bilinear z transforms, which is later included into the tlm scattering algorithm. created model efficiently describes studied material based on provided s parameters and enables analyzing and observing em field propagation throughout the medium. proposed approach is demonstrated by modeling dispersive isotropic chiral material slab exhibiting magnetoelectric coupling [20]. 2. formulation of maxwell’s equations for non-uniform mesh non-uniform mesh generally enables a proper resource handling especially while modeling materials and structures with nonlinear characteristics. it allows for a usage of smaller size cells in areas which are physically small but have a greater em importance and also bigger cells in less complex or less em important areas of the structure which improves an overall efficiency of the simulations. in a non-uniform tlm cell (see fig. 1) one or more directional space steps (x, z and z) are not the equal. relations between incident v i and reflected v r voltage wave components of the twelve-port non uniform hybrid tlm cell [2] can be presented as: 1 1 2 2 2 1 3 3 10 4 4 9 5 5 6 6 6 5 r i z z r i z z r i x y r i y x r i z y r i z y v v i z v v v i z v v v i z v v v i z v v v i z v v v i z v                   , 7 7 8 8 8 7 9 9 4 10 10 3 11 11 12 12 12 11 r i z x r i z x r i y x r i x y r i y z r i y z v v i z v v v i z v v v i z v v v i z v v v i z v v v i z v                   (1) dispersive media numerical compact modeling method based on scattering parameters 75 where impedance of each link line can be calculated based on link line inductance, time and space steps: / ,k kz l i t   (1,2,...,12)k (2) fig. 1 non-uniform tlm cell using notations for fields, current and flux densities maxwell’s curl equation can be written as ,ef mf h j d t e j b t           (3) after given constitutive relations for electric and magnetic current and flux densities , , ,ef mfj j d b , (3) can be written as: 0 0 0 0 ( / ), ( / ) ef e e r mf m r m h j e e e c h t t e j h h c e h t t                                     (4) where sign  denotes time domain convolution, ,e m  and ,e m  are electric and magnetic conductivity and susceptibility matrices respectively, 0, 0 are free space permittivity and permeability, respectively, and ,r r  are dimensionless matrices describing magnetoelectric coupling coefficients given as 1 r rr r r r r rr xyxx xz yx yy yz r zyzx zz c                        , 1 r rr r r r r rr xyxx xz yx yy yz r zyzx zz c                        (5) formulation (4) is extended further with transformations and introduced additional compact notations to create normalized form of maxwell’s equations (6): 76 m. kostić, n. donĉov, z. stanković, j. paul 1 1 2 2 2 ( ) , 2 2 2 ( ) t ef b e e r t mf b m m r c i i v v g v a v i t t t c v v i i r i a i v t t t                                                            (6) with 1 , , ,b a c   representing background susceptibility matrix, matrix of inverse cell areas, normalized curl matrix and matrix of inverse cell length, respectively [9]. previous form can be further transformed into the traveling wave format by using following relation where vector iv represents sum of appropriate incident wave intensities [9]: 2 2 4 , 2 2 4 tlm i tlm i c i v v v t c v i v i t              (7) this leads to: 1 1 2 4 2 ( ) , 2 4 2 ( ) i t ef e b e r i t mf m b m r v i v g v v a v i t v v i r i i a i v t                                                    (8) if reflected voltage wave rv and reflected free current ri are introduced as in [9], and matrix p is defined: 2 , 2 r i ef r i mf v v i i v v      (9) 1tp a       (10) while 1b p   , (8) can be written as: 2 4 2 ( ( )), 2 4 2 ( ( )) r e b e r r m b m r v v g v v p v i t i i r i i p i v t                                (11) 3. material modeling based on extracted effective parameters modeling process based on proposed approach (see fig. 2) begins by applying appropriate retrieval method [14-16] on the scattering matrix parameters of considered material, obtained either analytically, numerically or experimentally, in order to acquire effective permittivity, permeability and magnetoelectric coupling coefficients in the frequency range of interest. dispersive media numerical compact modeling method based on scattering parameters 77 in order to calculate effective parameters from s parameters the index of refraction n and characteristic impedance of considered medium zred need to be first determined [15]. based on calculated n and zred effective parameters of the material can be determined as: red n z   , rednz  , n   (12) after straightforward conversion of effective permittivity, permeability and magnetoelectric coupling coefficients to appropriate effective susceptibilities, (electric–e, magnetic–m and magnetoelectric–r which is related to (5)), they are then further approximated using the vf method [17-19] in order to represent each susceptibility in the form of rational function: [ , , ] 1 [ , , ] [ , , ] [ , , ]0 ( ) e m r e m r i e m r e m r pii c s s s       np (13) in (13) np[e,m,r] stands for the number of poles, s[e,m,r]pi represents the set of complex pole frequencies, and c[e,m,r]i are the pole residues of vf approximated susceptibilities. next, the bilinear z-transform is applied: 1 1 2 1 1 z z s t z             (14) to obtain a discrete-time model: [ , , ] [ , , ] [ , , ] 0 [ , , ] [ , , ] 0 ( ) e m r e m r i e m r i i e m r i e m r i i b z z a z         np np (15) where a[e,m,r]i and b[e,m,r]i are real coefficients and z is time-shift operator. fig. 2 z-tlm compact modelling approach a and b coefficients are used to define compact model which is incorporated into tlm scattering procedure where electric and magnetic fields are calculated as: 78 m. kostić, n. donĉov, z. stanković, j. paul 1 1 1 1 (2 ) ( 2 ) 2 2 r e e r m m re e e rm rm m m re t v z sv i t i z s s v k v s s s i k i s s                                      (16) where 1 0 0 0(4 4 4 )e e e rt g       , 1 0 0 0(4 4 4 )m m m rt r       , 0 1(4 4 )e e ek g     , 0 1(4 4 )m m mk r     and 1 1, ,e m re rms s s s represent additional material accumulator vectors. for simplicity, it is assumed that electric conductivity and magnetic resistivity are not dependent on frequency. 4. numerical results proposed approach is illustrated here for an efficient modeling of dispersive isotropic d = 200 mm wide chiral material slab placed between two isotropic free-spaces [20]. in this case due to isotropic nature of the material slab, magnetoelectric susceptibilities have the form 0 0 1 0 0 0 0 r r r r c               , r r   (17) by using the retrieval method, effective susceptibilities are first extracted from s parameters analytically obtained in [20] (figs. 3 6, marked with triangle). the retrieved electric, magnetic and magnetoelectric susceptibilities are shown in figs. 7, 8 and 9, respectively (marked with red triangle). fig. 3 magnitude of scattering parameters s11 and s21 dispersive media numerical compact modeling method based on scattering parameters 79 fig. 4 phase of scattering parameters s11 and s21 fig. 5 magnitude of scattering parameters s12 and s22 fig. 6 phase of scattering parameters s12 and s22 80 m. kostić, n. donĉov, z. stanković, j. paul retrieved susceptibilities are approximated with the vf method [17-19] with fourth order rational function (np = 4) (12). obtained a’s and b’s coefficients for electric and magnetic susceptibility as well as magnetoelectric susceptibility are presented in table 1. accuracy of approximation is confirmed through perfectly matched comparison of retrieved parameters values (red triangles on the graph) and values calculated based on a and b coefficients (solid line) (see figs. 7-9). discrete time-models described by (14) are further incorporated into the z-tlm scattering algorithm in (15) taking into consideration magnetoelectric coupling characteristic of isotropic chiral slab. total of 800 tlm cells are used in x direction, while chiral slab itself is modeled with 200 cells and simulation is executed within 2000 time steps. model was excited with initial z polarized gaussian pulse which propagates along +x direction. fig. 7 real and imaginary parts of effective electric susceptibility of isotropic chiral medium fig. 8 real and imaginary parts of effective magnetic susceptibility of isotropic chiral medium dispersive media numerical compact modeling method based on scattering parameters 81 fig. 9 real and imaginary parts of effective magnetoelectric susceptibility of isotropic chiral medium two simulations are performed, first where the chiral medium was not considered present inside of the mesh in order to obtain incident field values, and second simulation with chiral medium included in the mesh in order to obtain the total field at the first interface, free space-chiral slab, and transmitted fields at the second interface, chiral slabfree space. reflected field was calculated by deducting incident field from total field values. accuracy of the approach is confirmed through a comparison of magnitudes and phases of scattering parameters from [20] and simulated scattering parameters shown with solid lines in figs. 3 6. 4. conclusion in this paper, an approach for compact modeling of dispersive media exhibiting magnetoelectric coupling, described with effective parameters extracted from scattering matrix, is presented. since there is a wide variety of dispersive media exhibiting magnetoelectric coupling the compact models presented here provide efficient tools for characterization and inside view of em waves propagation through these media. in future research this approach will be used in the design process of devices based on these media because it allows optimization and fine tuning of their characteristics in the frequency range of interest. table 1 coefficients of discrete-time model in (15) coefficient e m r = r a 1 1 1 -3.994898e+00 -1.971846e+00 -3.994897e+00 5.985618e+00 -2.760262e-02 5.985617e+00 -3.986539e+00 1.971845e+00 -3.986539e+00 9.958199e-01 -9.723764e-01 9.958197e-01 b 5.471056e-05 -4.988997-01 5.224473e-03 2.651185e-08 9.860555e-01 -1.044641e-02 -1.093681e-04 1.174398e-02 -3.898947e-09 2.649748e-08 -9.860555e-01 1.044641e-02 5.471051e-05 4.871557e-01 -5.224469e-03 82 m. kostić, n. donĉov, z. stanković, j. paul acknowledgement: this work has been supported by the ministry of education, science and technological development of serbia, project number tr32024. references [1] k.s. kunz and r.j. luebbers, the finite difference time domain method for electromagnetics, crc press, 1993 [2] c. christopoulos, the transmission-line modelling (tlm) method, ieee/oup press, 1995. [3] j. paul, c. christopoulos and d.w.p. thomas, "generalized material models in tlm – part i: materials with frequency-dependent properties", ieee trans. antennas and propagation, vol. 47, no. 10, pp. 15281534, 1999. [4] j. paul, c. christopoulos and d.w.p. thomas, "generalized material models in tlm part 2: materials with anisotropic properties", ieee trans. antennas and propagation, vol. 47, no. 10, pp. 1535-1542, 1999. [5] j. paul, c. christopoulos and d.w.p. thomas, "time-domain modelling of electromagnetic wave propagation in complex materials", electromagnetics, vol. 19, no. 6, pp. 527-546, 1999. [6] j. paul, c. christopoulos and d.w.p. thomas, "generalized material models in tlm – part iii: materials with nonlinear properties", ieee trans. antennas and propagation, vol. 50, no. 7, pp. 997-1004, 2002. [7] j. paul, c. christopoulos, and d.w.p. thomas, "time-domain simulation of electromagnetic wave propagation in two-level dielectrics", international journal of numerical modelling: electronic networks, devices and fields, vol. 22, no. 2, pp. 129-141, 2009. [8] n. donĉov, m. kostić, z. stanković, "compact numerical models for efficient representation of em field propagation through dispersive and anisotropic media", in proceedings of the 5th international conference icetran 2018, palić, serbia, 2018, pp. 582-587. [9] m. kostić, n. donĉov, z. stanković, j. paul, "efficient tlm-based approach for compact modeling of anisotropic materials and composites", applied computational electromagnetics society (aces) journal, vol. 34, no. 1, pp. 1-10, 2019. [10] p. saguet, h. louzani and f. ndagijimana, "the use of z-transform in tlm with non-uniform meshes", in proceedings of the workshop on computational electromagnetics in time-domain, cem-td, atlanta, usa, 2005, pp. 68-71. [11] a. l. farhat, s. le maguer, p. queffelec and m. ney, "tlm extension to electromagnetic field analysis of anisotropic and dispersive media: a unified field equation", ieee transactions on microwave theory and techniques, vol. 60, no. 8, pp. 2339-2351, 2012. [12] t. asenov, m. kostić, n. donĉov and b. milovanović, “z-tlm method simulation of left-handed metamaterials based on retrieved effective parameters”, in proceedings of the 2nd international conference icetran 2015, silver lake, serbia, pp. mti1.7.1-5, 2015. [13] m. kostić, n. donĉov, z. stanković and t. asenov, "3d z-tlm modeling of dispersive lossy metamaterial structures described by scattering parameters", proceedings of the 3nd international conference on electrical, electronic and computing engineering, icetran 2016, zlatibor, serbia, pp. mti2.7.1-4, 2016. [14] f. j. hsieh and w. c. wang, "full extraction methods to retrieve effective refractive index and parameters of a anisotropic metamaterial based on material dispersion models", journal of applied physics, vol. 112, 064907, september 2012. [15] d. r. smith, d. c. vier, th. koschny and c. m. soukoulis, "electromagnetic parameter retrieval from inhomogeneous metamaterials", physical review e, 71, 036617, 2005. [16] v. milosević, b. jokanović and r. bojanić, "effective electromagnetic parameters of metamaterial transmission line loaded with asymmetric unit cells", ieee transactions on microwave theory and techniques, vol. 61, no. 8, pp. 2761-2772, aug. 2013. [17] b. gustavsen and a. semlyen, "rational approximation of frequency domain responses by vector fitting", ieee transactions on power delivery, vol. 14, no. 3, pp. 1052-1061, 1999. [18] b. gustavsen, "improving the pole relocating properties of vector fitting", ieee transactions on power delivery, vol. 21, no. 3, pp. 1587-1592, 2006. [19] d. deschrijver, m. mrozowski, t. dhaene, and d. de zutter, "macromodeling of multiport systems using a fast implementation of the vector fitting method", ieee microwave and wireless components letters, vol. 18, no. 6, pp. 383-385, 2008. [20] j. paul, c. christopoulos and d. w. p. thomas (1999) “time-domain modeling of electromagnetic wave propagation in complex materials”, electromagnetics, vol. 19, no. 6, pp. 527-546, 1999. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 529-545 https://doi.org/10.2298/fuee1804529s demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing  viktor sverdlov 1,2 , siegfried selberherr 2 1 christian doppler laboratory for nonvolatile magnetoresistive memory and logic at the institute for microelectronics, tu wien 2 institute for microelectronics, tu wien gußhausstraße 27–29, a-1040 wien, austria abstract. miniaturization of semiconductor devices is the main driving force to achieve an outstanding performance of modern integrated circuits. as the industry is focusing on the development of the 3nm technology node, it is apparent that transistor scaling shows signs of saturation. at the same time, the critically high power consumption becomes incompatible with the global demands of sustaining and accelerating the vital industrial growth, prompting an introduction of new solutions for energy efficient computations. probably the only radically new option to reduce power consumption in novel integrated circuits is to introduce nonvolatility. the data retention without power sources eliminates the leakages and refresh cycles. as the necessity to waste time on initializing the data in temporarily unused parts of the circuit is not needed, nonvolatility also supports an instanton computing paradigm. the electron spin adds additional functionality to digital switches based on field effect transistors. spinfets and spinmosfets are promising devices, with the nonvolatility introduced through relative magnetization orientation between the ferromagnetic source and drain. a successful demonstration of such devices requires resolving several fundamental problems including spin injection from metal ferromagnets to a semiconductor, spin propagation and relaxation, as well as spin manipulation by the gate voltage. however, increasing the spin injection efficiency to boost the magnetoresistance ratio as well as an efficient spin control represent the challenges to be resolved before these devices appear on the market. magnetic tunnel junctions with large magnetoresistance ratio are perfectly suited as key elements of nonvolatile cmos-compatible magnetoresistive embedded memory. purely electrically manipulated spin-transfer torque and spin-orbit torque magnetoresistive memories are superior compared to flash and will potentially compete with dram and sram. all major foundries announced a near-future production of such memories. two-terminal magnetic tunnel junctions possess a simple structure, long retention time, high endurance, fast operation speed, and they yield a high integration density. combining received september 10, 2018 corresponding author: viktor sverdlov christian doppler laboratory for nonvolatile magnetoresistive memory and logic at the institute for microelectronics, tu wien, gußhausstraße 27–29, a-1040 wien, austria (e-mail: sverdlov@iue.tuwien.ac.at)  530 v. sverdlov, s. selberherr nonvolatile elements with cmos devices allows for efficient power gating. shifting data processing capabilities into the nonvolatile segment paves the way for a new low power and high-performance computing paradigm based on an in-memory computing architecture, where the same nonvolatile elements are used to store and to process the information. key words: digital spintronics, spinfet, spinmosfet, spin-transfer torque, stt, spin-orbit torque, sot, mram, in-memory computing 1. introduction continuous miniaturization of complementary metal-oxide semiconductor (cmos) devices is enabling the unprecedented increase of speed and performance of modern integrated circuits. numerous outstanding technological challenges have been resolved on this exciting path. among the most crucial technological achievements implemented by the semiconductor industry within the last 15 years to boost cmos performance while maintaining the gate control over the semiconductor channel are the introduction of strain [1], high-k gate dielectrics and metal gates [2], and three-dimensional (3d) tri-gate transistor architecture [3],[4], [5]. while chips with 5nm technology based on nanosheets are already nearing production [6], the semiconductor industry is now focusing on a 3nm technology node. although setting limits for scaling has proven to be a mere meaningless task in the past, it is obvious that the conventional transistor scaling is showing signs of saturation. to sustain the growing demand for high performance small area central processing units (cpus) and high-capacity memory needed to handle an increasing information flow, the introduction of a disruptive technology employing new computing principles is anticipated. most importantly, any emerging technology must be energy efficient. indeed, a harmful active power penalty already prevents the clock frequency from increasing in cmos circuits and is saturated at approximately 3.7 ghz with the possibility to be boosted for a short time up to 4.2 ghz under heavy load in high-end consumer-level workstation cpus. although the transistor size has been scaled down, the load capacitance value per unit area remained approximately unchanged, which keeps the on-current approximately constant for maintaining appropriate high speed operation due to the unavoidable charging of this capacitance. in addition, small transistor dimensions lead to rapidly increasing leakages. a rapid increase of the stand-by power due to transistor leakages at small transistor dimensions, as well as of the dynamic power and the need to refresh the data in dynamic random access memory (dram), is becoming a pressing issue. the microelectronics industry is facing major challenges related to power dissipation and energy consumption, and the scaling of silicon semiconductor devices will soon hit a power wall. an attractive path to mitigate the unfavorable trend of increasing power at stand-by is to introduce nonvolatility in the circuits. the development of an electrically addressable nonvolatile element, which combines fast operation, simple structure, and high endurance, is essential to mitigate the increase of the stand-by power and the power needed for data refreshment. nonvolatile elements also enable instant-on architectures without the need of data initialization when going from a stand-by to an operation regime. recently, a fruitful cooperation between intel and micron resulted in bringing a nonvolatile memory to the market, which is based on a three-dimensional x-point cross-bar architectural solution [7]. although the physics principle of operation has not been officially released, there is a demands for spin-based nonvolatility in emerging digital logic and memory 531 consent within the community that, as a phase-change memory, it is based on a resistance change due to the phase transition. although being nonvolatile, the phase-change memory requires a high power to write information as compared to other nonvolatile memories, for example, resistive ram. oxide-based resistive ram (rram) exploits filamentary switching between the on/off states and is thus intrinsically prone to significant resistance fluctuations in both states. in addition, the endurance reported is only slightly better than that of flash memory. although rram possesses a simple structure and a large on/off current ratio, it is premature to consider rram at its current stage of development for digital applications. since continuous conductance modulation is suitable for implementing analog synaptic weights, both filamentary and non-filamentary switching rram types are currently intensively investigated, particularly for neuromorphic applications [8]. to be competitive with the traditional volatile technologies and also with nonvolatile flash, emerging nonvolatile devices must offer a fast switching time and high integration density supported by good scalability. in addition, emerging nonvolatile memory must possess a long retention time, a high endurance, and a low write power. at the same time, it must exhibit a simple structure to reduce fabrication costs and must be compatible with cmos to benefit from advantages provided by outstandingly well-developed cmos fabrication technology. traditional cmos technology is based entirely on the electron charge. another intrinsic characteristic of electrons, the electron spin has remained relatively unexploited for digital applications until recently. although the electron spin is characterized by the two states with distinct projections at a quantization axis and may require a negligible energy for spin reversal, the property attractive for digital electronics is, that the spin interacts effectively with a magnetic, not an electric, field. as the magnetic field is usually generated by a current, this technology turns out to be not suitable for downscaling as reducing the current carrying wire’s cross-section increases the current density, which results in reliability issues due to electromigration. it is therefore necessary to proceed to the quantum mechanical level to make the coupling of the electron spin to the electric field efficient. we briefly review below the current status of spin-based digital switches including the recently demonstrated spin field effect transistor (spinfet) and the spin mosfet, and we outline the exciting challenges still preventing the spin-based switches from entering mass production. thereafter we document the current status in spin-based purely electrically addressable nonvolatile magnetoresistive memories, which are proven to be competitive with flash memory and possess a considerable potential to enter the dynamic and static ram markets. we conclude the review with an outlook focusing on nonvolatile logic architectures. 2. spin-based switches for digital applications discovery of the gate-voltage dependent rashba spin-orbit field [9] acting on the electron spin in the transistor channel opened a possibility for a purely electrical way to manipulate the spin of a propagating electron, which resulted in the proposal of a spinbased transistor, in which the charge functionality was complemented and enhanced by the electron spin – the spin field-effect transistor, or spinfet [10]. the spinfet (fig.1) is a promising future semiconductor device with a performance potentially superior to 532 v. sverdlov, s. selberherr that achieved in the present transistor technology [11], [12], [13]. an additional functionality is added by replacing the non-magnetic source and drain electrodes in a fet by ferromagnetic counterparts. the two ferromagnetic contacts (source and drain) are connected by a nonmagnetic semiconductor channel region. metallic ferromagnetic contacts serve not only as an injector/detector of the electron charge current in the channel. because of their magnetization, the source and drain electrodes inject/detect electron spins [9] ,[10]. the electron current is enhanced in the case of parallel alignment between the source/drain electrodes as electrons injected with spins parallel to the drain magnetization can easily escape from the channel to the drain. alternatively, the current is suppressed for antiparallel magnetization alignment [9], [10]. the device with the on-current depending on the relative alignment between source and drain is termed spin metal-oxide-semiconductor field-effect transistor (spinmosfet). as the magnetization of the source/drain can be manipulated by means of the external magnetic field and/or current (by means of the spin-transfer torque), the two on-current states for parallel/antiparallel magnetization alignment potentially enable the design of reprogrammable logic [10]. importantly, the relative magnetization orientation between the source and drain is preserved without external power, which makes reprogrammable logic partly nonvolatile. fig. 1 illustration of spinfet functionality [10]. spin-polarized electrons are injected from a ferromagnetic source and absorbed by a ferromagnetic drain. the electron spins in the channel can be additionally manipulated by means of the gate voltage dependent spin-orbit interaction. the total current through the device depends on the relative orientation between the magnetization direction of the drain and the electron spin polarization at the end of the semiconductor channel. the electron spin polarization close to the drain interface is determined by the source magnetization and can be additionally modulated by the effective gate voltage dependent spin-orbit interaction in the channel. however, in contrast to the electron charge, the spin injected into the channel is a non-equilibrium quantity and is not conserved. the injected spin relaxes to its equilibrium zero value while propagating through demands for spin-based nonvolatility in emerging digital logic and memory 533 the channel. spin relaxation is an important detrimental factor affecting the spinfet functionality as it reduces the current modulation due to spin functionality. the spin relaxation is governed by the spin-orbit interaction (soi) in combination with scattering, so even a spin-independent scattering potential will result in a spin decay. the spin relaxation manifests itself differently in semiconductors of the group iv including silicon and in iii-v semiconductors. in crystals obeying the inversion symmetry (silicon, germanium) the spin relaxation is governed by the elliott-yafet mechanism [14], [15]. because the wave function with fixed spin projection is not an eigenstate of the hamiltonian with the spin-orbit interaction included, the wave function possesses a small but finite contribution with an opposite spin projection. therefore, the small but finite probability to flip the electron spin appears at every spin-independent scattering event – the elliott process [14]. this is complemented by the yafet spin-flip events due to spindependent contribution to electron-phonon scattering. in silicon the electron spin relaxation is determined by the inter-valley transitions [14] and can be efficiently controlled by stress [15]. in silicon channels, uniaxial stress generating shear strain is particularly efficient to suppress the spin relaxation [16] as it lifts the degeneracy between the two unprimed subband ladders [17]. in addition, choosing the spin injection direction also boosts the spin lifetime by a factor of two [18]. recently, the first successful demonstration of a silicon spinmosfet at room temperature [19] was presented. a large absolute current modulation in the spinmosfet was achieved by altering the relative magnetization between the source and the drain from parallel to antiparallel. however, the relative ratio of the on-currents, a characteristic similar to the tunnel (t) magnetoresistance (mr) ratio, is still several orders of magnitude lower [19] than the tmr in magnetic tunnel junctions. in the spinmosfet studied, a mr less than 1% was experimentally observed at room temperature [19]. a possible option to boost the modulation is to employ an electric field at the contact interface between the ferromagnet and the two-dimensional electron gas to increase spin-to-charge conversion [20]. although a large tmr of 80% was reported on a iii-v surface layer at low temperature, at about 1k, which is needed to avoid spin relaxation, the technique of boosting spin-to-charge conversion possesses potential for being employed in silicon at room temperatures. in iii-v materials the crystal lattice does not have any inversion symmetry, and the degeneracy between the up and down spin states with the same electron momentum is lifted. the spin relaxation is governed by the dyakonov-perel mechanism [12], [13] and becomes stronger for larger spin-orbit interaction. at the same effective spin-orbit, the design of a spinfet is facing a tough trade-off. from one side, one needs a stronger spinorbit interaction for more efficient spin manipulation. from the other side, strong spin-orbit interaction results in a short spin-diffusion length characterizing the distance for which nonequilibrium spins can propagate along the channel before relaxing to the zero equilibrium value. therefore, the first convincing experimental demonstration of a spinfet [21] was performed at a very low temperature to effectively suppress spin relaxation. spinfets and spinmosfets can properly function only, if the electron spins are efficiently injected/extracted in/from the channel. to achieve spin injection/detection from a metal ferromagnet in the semiconductor channel and vice versa, a properly engineered tunneling barrier must be placed between the electrodes and the channels [22] to mitigate the spin impedance mismatch. however, the signal attributed to the spin injection [23] appears to be much weaker as compared to the large effect [24] currently attributed to the spin-dependent resonant tunneling [25], [26], [27]. peculiarities of spin-dependent trap534 v. sverdlov, s. selberherr assisted tunneling in a multi-terminal configuration may result in switches driven by a single spin on the trap [28] and with characteristics similar to those of a single-electron transistor. the lack of an efficient way to electrically inject spins from a ferromagnetic metal in a semiconductor was one of the reasons why it took more than 25 years from the vision of a spinfet in 1990 [10] to the first reliable experimental spinfet demonstration [21], where a clever idea to employ the voltage-dependent spin-orbit interaction in iii-v materials was used for an efficient spin injection from point contacts into the channel. additional gates were employed to create the point contacts to the two-dimensional electron gas by confining it to a one-dimensional channel. applying different voltages to these gates produces the spin-orbit rashba field perpendicular to the point contact. then all electrons impinging the two-dimensional channel through the one-dimensional point-like contacts are spin-polarized. this way an efficient and purely electrical spin injection is achieved, which allowed the ever first reliable demonstration [21] of a working spinfet. new 2d materials (graphene, transition metal dichalcogenides) are attractive for emerging microelectronics applications as they allow developing new concepts, in particular for spin switches [29]. spin-polarized electrons injected into a graphene sheet propagate to the drain and remain spin-polarized as the spin relaxation in graphene is weak. however, if a mos2 single layer is put on top, a parallel path for electrons through the material with strong spin relaxation is open, and the current reaching the drain is not spinpolarized. as the chemical potential of the mos2 layer can be tuned from the conduction band to the gap, this opens the opportunity to have a switch between spin-polarized/spinunpolarized drain currents depending on the gate voltage, which operates at 200k. although many fundamental challenges have been resolved and a spinfet and a spinmosfet have been successfully demonstrated, both devices still rely on the charge current to transfer the spin, which may set some limitations for the applicability of such devices in main-stream microelectronics. in addition, the absence of an efficient and purely electrical spin injection scheme results in a low mr inferior to that in magnetic tunnel junctions. nonvolatile devices based on magnetic tunnel junctions possess a tmr suitable for practical applications, in particular in memory devices discussed below. 3. nonvolatile magnetoresistive memories an efficient coupling between the electrical and the magnetic degree of freedom at the quantum mechanical level, called the giant magneto-resistance effect, was discovered in 1986. the discovery offered a purely electrical way of reading the stored magnetization information, which revolutionized hard drive storage devices and was honored with the nobel prize in 2007 [30]. it then was discovered that the tunneling current through a magnetic tunnel junction (mtj) consisting of two ferromagnets separated by a thin tunnel barrier structure strongly depends on the relative polarization of the ferromagnetic contacts. the difference in the mtj resistivity between the parallel and the antiparallel configuration reaches several hundred percent at room temperature [31], which represents an efficient way of converting the spin (magnetization) degree of freedom into a charge (current) employed by cmos devices. thanks to this technology a new generation of hard drives with even higher storage densities has been developed. demands for spin-based nonvolatility in emerging digital logic and memory 535 however, in order to introduce competitive nonvolatile memory based on mtjs, an efficient way of converting charge information into magnetic moment (spin) orientation by purely electrical means is required. the spin-transfer torque effect (stt) [32], [33] has been proven to be perfectly suited for purely electrical data writing by passing a current through the mtj (fig.2a). when electrons pass through a fixed ferromagnetic layer, their spins become aligned with the magnetization. when these spin-polarized electrons enter the free magnetic layer, they become aligned with the magnetization of the free layer within a transition layer of a few angstroms. due to the conservation of the total angular momentum the change of the electron spin is compensated by the modification of the free layer magnetization. therefore, the spin-polarized current exerts a torque on the magnetization of the free layer. if the current is sufficiently strong to overcome the damping, this torque causes magnetization switching. if the current tends to switch the magnetization from the parallel to the antiparallel configuration, altering the current direction will result in the magnetization switched from the antiparallel to the parallel state. 3.1. spin-transfer torque mram the exciting journey of bringing stt-mram to the market was ignited by the observation of spin torque induced switching in mgo-based [34] stt-mram cells. depending on the orientation of the layer magnetizations the magnetic pillars can be divided into in-plane with the magnetization lying in the plane of the magnetic layer (fig.2) and out-of-plane with the magnetization direction to be discussed later. (a) (b) fig. 2 (a) magnetic tunnel junction with in-plane magnetization orientation. the magnetization of the reference layer (rl) is fixed, while the magnetization of the free layer (fl) can be flipped between the two preferred magnetization orientations by means of the spin transfer torque generated by the current passing through the structure. the two ferromagnetic layers are separated by a thin mgo tunnel barrier. (b) the preferred magnetization direction in in-plane magnetized free layers is defined by their shape. for elliptic structures these directions are along the long ellipse axes. for in-plane mtjs, faster switching is achieved, when the free layer is made of two half-ellipses separated by a narrow gap [35], [36] schematically shown in fig.3. the switching of the half-elliptic parts appears in-plane in opposite senses (fig.3b). this way a large demagnetization penalty of the magnetization getting out of plane at switching of a monolithic structure (fig.2b) is avoided, and the switching barrier becomes equal to the thermal barrier. because the thermal barrier depends on the free layer volume, the required large thermal stability factors of ~80kt are easily achieved in this structure. 536 v. sverdlov, s. selberherr (a) (b) fig. 3 (a) equilibrium magnetization in an in-plane composite layer made of two halfelliptic parts separated by a narrow gap. (b) at spin transfer switching, the magnetization of either half-elliptic part remains mainly in-plane. the magnetizations move in opposite senses and pass through the configuration defining the thermal barrier between the two equilibrium states [35]. in perpendicular mtjs (p-mtjs) shown in fig.4a the thermal barrier separating the two states is equal to the switching barrier, which reduces the switching current. in addition, p-mtjs are better suited for high-density integration [37]. (a) (b) fig. 4 (a) illustration of a perpendicularly magnetized mtj. the perpendicular uniaxial anisotropy is interface-induced [38]. (b) the thermal stability is enhanced by adding the second cofeb/mgo interface with the interface induced anisotropy [42]. the gilbert damping is also reduced for the composite free layer made of two thin ferromagnetic cofeb layers separated by a ta metallic spacer [42]. however, it is difficult to find a material with so strong uniaxial anisotropy that it can overcome the demagnetization field of a layered structure bringing the magnetization inplane. a critical technological step allowing to solve this problem was the discovery of an interface-induced perpendicular anisotropy at the cofeb/mgo interface [38], which makes the very thin cofeb layer perpendicularly magnetized. to scale the diameter of the mtj beyond 10nm, the use of shape anisotropy was suggested [39]. it has been demands for spin-based nonvolatility in emerging digital logic and memory 537 shown that the thermal stability can be boosted for small diameters without sacrificing on tmr and without any need of new materials, as feb for the ferromagnetic free layer and mgo for the tunnel barrier were used. any nonvolatile memory including mram must be characterized by the ability to write the data with low energy without damaging the device, long data retention, and the ability to read the data without destroying it. improving one or two aspects of its functionality usually leads to a degradation of the remaining functionality [40]. therefore, a careful parameter optimization specific to a particular technology must be properly addressed. an innovative design yielded already a successful implementation of 8mb 1t-1mtj stt-mram embedded in a 28nm cmos logic platform [41]. another issue with stt-mram is the relatively high current required for fast sttinduced writing. this fact has several implications. firstly, due to the relatively high energy required for writing, stt-mram cannot be used in high-level processor caches due to the high activity factor. the necessity to switch memory frequently negates the benefits of nonvolatility provided by mram. secondly, large switching currents are supplied via an access transistor. finally, a large switching current density can result in serious reliability issues like mtj’s resistance drift and eventually its dielectric breakdown. the critical current density depends on the switching pulse duration, with a substantial current increase for sub 10ns switching. a plausible way to reduce the switching current density is to work with p-mtjs, however, even in this case the switching current competes with the gilbert damping and must be sufficiently strong to overcome the potential barrier separating the two states, the thermal stability barrier. the height of the thermal stability barrier determines the data retention. for 10 year data retention the thermal stability barrier must be at least 80kt for gigabit mram arrays. as the barrier cannot be decreased without violating the retention, in order to reduce the switching current density and preserve the large thermal barrier at the same time, one has to reduce the gilbert damping and increase the spin current polarization. a solution which helps boosting the thermal stability barrier is to employ a free layer with two cofeb/mgo interfaces [42] with the interface induced perpendicular anisotropy shown in fig.4b. it turns out that the use of the p-mtj structure with two cofeb/mgo interfaces and a composite free layer cofeb/ta/cofeb [42] also reduces the gilbert damping by half, thus allowing to simultaneously boost the thermal barriers and to reduce the switching current. in order to integrate stt-mram with the cmos fabrication process, mtjs must sustain at least 400c temperature typical for the back-end-of-line process. recently, imec reported a process allowing to preserve the high tmr and thermal stability of mtjs [43]. the idea is to invert the free and the fixed layer by putting the fixed layer on top of the mtj. an additional synthetic ferromagnet instead of an antiferromagnet is employed to pin the magnetization of the fixed layer. the design requires a compensating magnet to be in addition integrated in the structure. optimization of this magnet can be used to achieve a symmetric switching between the parallel and the antiparallel configuration and back. advanced stt-mram is characterized by a high-speed access time of 10ns. it is thus suitable for last level caches. 4gbit stt-mram arrays with p-mtjs and compact memory cells were recently reported [37]. currently, 256mb stt-mram from everspin technologies is already available [44]. all major foundries including samsung [45] and globalfoundries [46] announced the beginning production of embedded stt-mram based on the 28nm [41]/22nm [46] fully-depleted silicon-on-insulator technology. we are therefore witnessing the beginning of nonvolatile stt-mram entering the embedded 538 v. sverdlov, s. selberherr memory market and competing with dram and potentially sram, traditionally dominated by cmos-based volatile devices. if successful, this will result in an exponential growth of the stt-mram market with a momentous impact on information storage and processing in the near future. 3.2. spin-orbit torque mram spin-transfer torque magnetic ram (stt-mram) is fast (10ns), possesses high endurance (10 12 ), and has a simple structure. it is compatible with cmos and can be straightforwardly embedded in circuits. it is particularly promising to employ nonvolatility in internet of things (iot) and automotive applications, as well as a replacement of conventional volatile cmos-based dram and nonvolatile flash memory. although the use of stt-mram in last-level caches is conceivable [47], the switching current for operating faster than at 10ns is quite high. the need of even higher switching currents for faster operation in higher-level caches potentially prevents stt-mram from entering in l2 and l1 caches currently mastered by static ram (sram). in addition, rapidly increasing critical currents required for operating stt-mram at 5ns result in large current densities running through magnetic tunnel junctions. this leads to oxide reliability issues, which in turn reduces the mram endurance to that of the flash memory, thus negating one of the important mram advantages over flash. (a) (b) fig. 5 (a) spin-orbit torque memory cell with an in-plane magnetized free layer (fl) switched by current write pulses (red and blue) applied through heavy metallic wires nm1 and nm2 with a high spin hall angle. fl is grown on nm1. read current (green) is applied through an mtj. (b) the switching scheme [36] based on two short consecutive orthogonal current pulses provides fast, deterministic, and magnetic field free magnetization reversal of a perpendicularly magnetized fl [68]. the engineering of an electrically addressable nonvolatile memory combining high speed (sub-ns operation) and high endurance suitable for replacing sram in higher-level caches of hierarchical multi-level processor memory structures cannot be based on stt, and the use of new physical principles is required. among the newly discovered physical phenomena suitable for next-generation mram is the spin-orbit torque (sot) assisted demands for spin-based nonvolatility in emerging digital logic and memory 539 switching at room temperature in heavy metal/ferromagnetic [48], [49], [50], [51], [52], [53], [54], [55] or topological insulator/ferromagnetic [56], [57], [58], [59] bilayers (fig.5). in this memory cell, the magnetic tunnel junction’s free layer is grown on a material (nm1 in fig.5) with a large spin hall angle. the sot acting on the adjacent magnetic layer is generated by passing the current through this material, schematically shown by the red arrow. the large switching current is injected in-plane along the heavy metal/ferromagnetic bilayer and does not flow through the mtj, the state of which is read by passing a small current through the mtj shown by the green arrow. this results in a three-terminal configuration where the read and write current paths are decoupled. since the large write current does not flow through the oxide in the mtj, this prevents the tunnel barrier from damage. therefore, three-terminal mram cells are promising candidates for future generations of nonvolatile memory for fast sub-ns switching [54]. sot-mram is an electrically addressable nonvolatile memory combining high speed and high endurance and is thus suitable for applications in caches [54]. although the high switching current is not flowing through a magnetic tunnel junction but rather through a heavy metal wire under it, the current is still high, and its reduction is the pressing issue in the field of sot-mram development. topological insulators (tis) are promising materials for reducing the switching current as they are characterized by a high spin hall angle and efficiency of charge to spin conversion due to peculiar perpendicular spin-momentum locking in the interface states. in addition, the strong spin-orbit interfacial rashba field helps generating spin density in tis boosting the charge to spin conversion efficiency above 100%. however, although high charge to spin conversion efficiency in tis has been reported, the electrical conductivity of tis required to build a high-density, ultra-low power, and ultra-fast nonvolatile memory was not sufficiently high because of their insulating bulk. recent developments introduce bise [57] and bisb [58] based tis as suitable candidates for emerging sot-mram as they possess a charge to spin conversion efficiency of 18.8 and 52 times, respectively. this allows reducing the switching current by two orders of magnitude as compared to tungsten-based sot-mram. in addition, bisb samples [58] exhibit very high electrical conductivity making thin bisb films leading candidates for emerging fast and low-power sot-mram, and the process integration of bisb into a realistic mtj stack is currently under scrutiny. despite an undisputable progress in developing sot-mram, one important shortcoming has not been convincingly resolved so far. namely, a static magnetic field is still required to guarantee deterministic switching [60] or a perpendicularly magnetized free layer. several paths to achieve deterministic switching without magnetic fields were suggested. they require unusual solutions to break the mirror symmetry either by means of the shape of the dielectric [61] or the free layer [62], or by controlling the crystal symmetry of the metal line at the microscopic layer [53]. biasing the free layer by employing an exchange coupling to an antiferromagnet [63], [64], [65], [66] as well as the use of a peculiar sample shape, which controls the switching [67], were recently reported. however, even if in most of these studies a field-free switching was reported, these methods either require a local intrusion into the fabrication process, or are based on solutions whose scalability is questionable (antiferromagnets, shapes), which makes further large scale integration of the fabricated memory cells problematic 540 v. sverdlov, s. selberherr fig. 6 switching time of a perpendicular fl as a function of the width of the heavy metal line nm2, for several durations of the second write current pulse in the two-pulse switching scheme [36]. a nm2 width of 12.5nm is optimal as it guarantees fast, robust, and deterministic switching which is insensitive to small variations of the pulse duration or the nm2 width. the applied write currents are equal to 100μa. the first write current pulse of 100ps is applied after initial thermalization at 300k. the saturation magnetization is ms=4×10 5 a/m, the gilbert damping is α=0.05, and the fl dimensions are 52.5nm × 12.5nm × 2nm. the sot switching scheme based on the use of two consecutive orthogonal subnanosecond current pulses shown in fig.5 can switch in-plane structures efficiently [37], [68]. the implementation is suitable for integration in a cross-bar architecture [37]. the two-pulse switching scheme is applicable for switching perpendicularly magnetized free magnetic layers of rectangular shape shown in fig.5b [69]. the second consecutive pulse is applied through the wire nm2 with a large hall angle. sub-300ps, 100% reliable, and magnetic field-free switching is achieved at around 30% overlap of the second pulse wire nm2 with the free layer as shown in fig.6. in addition, at these overlaps the switching is not sensitive to small variations of the nm2 width and the second pulse duration. a proper integration of sot-mram represents a significant challenge as the memory cells must withhold at least the back-end-of-line thermal budget. as imec presented recently a technology to integrate a perpendicular beta-phase w/cofeb/mgo/cofeb/synthetic antiferromagnetic stack based sot-mram on a 300mm cmos wafer with fully cmos compatible processes [70], there is a cautious confidence that fast low-power nonvolatile magnetoresistive memory suitable for processor caches will be developed soon. demands for spin-based nonvolatility in emerging digital logic and memory 541 4. nonvolatile computing mram is cmos compatible and is embedded directly on top of a cmos logic chip. this layout is practically relevant as it facilitates 3d integration of circuits in which highperformance cmos layers are separated by low energy consuming nonvolatile mram containing spacers. fast nonvolatile memory combined with nonvolatile processing elements is a fertile ground for realizing microprocessors with reduced power consumption working on an entirely new principle. in addition, placing mram arrays directly on top of cmos circuits allows reducing the length of interconnects and the corresponding delay time. the computer architecture, where nonvolatile elements are located on a chip with cmos devices, is traditionally called logic-in-memory, although as of yet no information is processed in nonvolatile elements. power-efficient mrambased logic-in-memory concepts have already been demonstrated [71]. they include field-programmable gate arrays and ternary content addressable memory, as well as other variants. these cmos/spintronic hybrid solutions are already competitive in comparison to the conventional cmos technology with respect to power consumption and speed. the introduction of nonvolatility in circuits helps cutting the power consumption by 50%, with outstanding 90% reduction in specific circuits [71]. placing the actual computation into the magnetic domain reduces the need of converting magnetically stored information into currents and voltages for processing and helps to simplify the circuit layout and to increases the integration density. the idea is to use mtjs as elementary blocks for non-conventional in-memory computing architectures. for example, any two of the 1t-1mtj cells in an mram array can not only serve as nonvolatile memory units, but can also be employed for implementing a conditional switching of a target mtj depending on the state of the source mtj [72]. this results in a logical operation known as the material implication operation (imp), which in combination with the false operation can cover the whole space of all boolean operations. a compact implication-based single-bit full adder realization involving only six 1t-1mtj cells and 27 subsequent false and imp operations can be realized [73]. recently, a massively parallel not operation based on imp implementation by using the voltage asymmetry of the voltage controlled magnetic anisotropy effect and the precessional dynamics of the switching process was proposed [74]. the logic architecture based on the devices acting simultaneously as a memory element and compute unit is termed stateful. an alternative option is to follow a conventional path with memory and computing units separated, in which, like in an allspin logic concept [75], both elements are nonvolatile and implemented in a magnetic domain. placing the actual computation into the magnetic domain eliminates the need of converting magnetically stored information into the currents and voltages for processing. the idea of combining mtjs with a common free layer enables the realization of a nonvolatile magnetic flip-flop [76]. the processing unit consists of an stt based nonvolatile majority gate and nonvolatile magnetic flip-flops used as memory registers in a nonvolatile processing environment [77]. the availability of high-capacity nonvolatile memory enables new logic-in-memory and computing-in-memory architectures for future artificial intelligence and cognitive computing [78]. nonvolatile mtjs are suitable for neural network realizations as they can be considered as a current-driven programmable resistor, a memristor [79]. mtj based neural networks featuring nonvolatile synapses [80] allow for high-speed pattern 542 v. sverdlov, s. selberherr recognition with about a 70% reduction in gate count and a 99% improvement in speed as compared to their cmos counterparts. neuromorphic computing is becoming a reality, with the first self-learning chips already revealed [81]. 5. conclusions although spin switches based on spin-enhanced transistors have been successfully demonstrated, the increase of the on-current ratio between the parallel and antiparallel source/drain magnetization configuration at room temperature and the efficient gate voltage induced spin control remain the main challenges preventing these devices from entering the market so far. in addition, as all proposed up-to-date spin switches require the charge current to transfer the spin, it sets limitations for the applicability of such devices in main-stream microelectronics which is already suffering from high power demand, and new ideas to realize spin-based switches for digital applications are urgently needed. nonvolatile memories based on magnetic tunnel junctions are about to hit the market as all leading manufacturers announced embedded stt-mram production in 2018. stt-mram is positioned as a successor not only for flash, but also for cmos-based main computer memory. however, rapidly growing switching currents and power consumption might prevent stt-mram from entering cache memory currently mastered by sram. because of the large switching currents and insufficient speed, sttmram is unlikely to replace sram in high-level core caches. spin-orbit torque innovative nonvolatile devices with improved switching characteristics and enhanced charge to spin conversion efficiency demonstrate a potential for processor-embedded memories. the successful adoption of nonvolatility in microelectronic systems by developing various logic-in-memory architectures and in-memory processing will inevitably result in increasing dissemination of this technology for other applications such as ultralow-power electronics, high-performance computing, big data analysis, automotive electronics, and the internet of things. acknowledgement: the financial support by the austrian federal ministry for digital and economic affairs and the national foundation for research, technology and development is gratefully acknowledged. references [1] s.-e. thompson, m. armstrong, c. auth et al., ―a 90-nm logic technology featuring strained-silicon‖, ieee trans.electron devices, vol. 51, 1790, 2004. [2] k. mistry, c. allen, c. auth et al., ―a 45nm logic technology with high-k+metal gate transistors, strained silicon, 9 cu interconnect layers, 193nm dry patterning, and 100% pb-free packaging‖, in iedm techn. digest, 2007, pp. 247-250. demands for spin-based nonvolatility in emerging digital logic and memory 543 [3] s. natarajan, m. armstrong, m. bost et al., ―a 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 sram cell size in a 291mb array‖, in iedm techn. digest, 2008, pp. 941-943. [4] r. xie, p.montanini, k.akarvardar et al., ―a 7nm finfet technology featuring euv patterning and dual strained high mobility channels‖, in iedm techn. digest, 2016, pp. 47-50. [5] s.-y. wu, c.y.lin, m.c.chiang et al., ―7nm cmos platform technology featuring 4th generation finfet transistors with a 0.027µm2 high density 6-t sram cell for mobile soc applications‖, in iedm techn. digest, 2016, pp. 43-46. [6] n. loubet, t. hook, p. montanini et al., ‖stacked nanosheet gate-all-around transistor to enable scaling beyond finfet‖, in proceedings of the symp. vlsi technology and circuits, 2017, t230. [7] https://www.intel.com/content/www/us/en/architecture-and-technology/intel-optane-technology.html [8] j g.w. burr, r.m. shelby, a.sebastian et al., ―neuromorphic computing using non-volatile memory‖, advances in physics x, vol. 2, 89, 2017. [9] y. bychkov and e. rashba, ―properties of a 2d electron gas with lifted spectral degeneracy‖, jetp lett. vol. 39, 78, 1984. [10] s. datta and b. das, ―electronic analog of the electro-optic modulator‖, applied physics letters, vol.56, 665, 1990. [11] s. sugahara and j. nitta, ―spin-transistor electronics: an overview and outlook‖, in proceedings of the ieee, 2010, vol. 98, 2124. [12] i. zutic, j. fabian, and s. das sarma, ―spintronics: fundamentals and applications‖, rev. mod. phys., vol. 76, 323,2004. [13] j. fabian, a. matos-abiaguea, c. ertler, et al., ―semiconductor spintronics‖, acta phys. slovaca, vol. 5, 565, 2007. [14] p. li and h. dery, ―spin-orbit symmetries of conduction electrons in silicon‖, phys. rev. lett., vol. 107, 107203, 2011. [15] o. chalaev, y. song, and h. dery, ―suppressing the spin relaxation of electrons in silicon‖, phys. rev. b, vol. 95, 035204, 2017. [16] v. sverdlov and s. selberherr, ―silicon spintronics: progress and challenges‖, physics reports, vol. 585, 1, 2015. [17] v. sverdlov, ―strain-induced effects in advanced mosfets‖, springer, 2011. [18] v. sverdlov, j. ghosh, and s. selberherr, ―universal dependence of the spin lifetime in silicon films on the spin injection direction‖, in proceedings of the workshop on innovative devices and systems (winds), 2016, p.7. [19] t. tahara, h. koike, m. kameno, et al., ―room-temperature operation of si spin mosfet with high on/off spin signal ratio‖, appl. phys. express, vol. 8, 11304, 2015. [20] m. oltscher, f. eberle, t. kuczmik et al., ―gate-tunable large magnetoresistance in an allsemiconductor spin valve device‖, nature communications, vol. 8, 1897, 2017. [21] p. chuang, s.-c. ho, l.w. smith et al., ―all-electric all-semiconductor spin field-effect transistors‖, nature nanotechnology, vol. 10, 35, 2015. [22] e.i. rashba, ―theory of electrical spin injection: tunnel contacts as a solution of the conductivity mismatch problem‖, phys. rev. b, vol. 62, r16267, 2000. [23] t. tahara, y. ando, m. kameno et al., ―observation of large spin accumulation voltages in nondegenerate si spin devices due to spin drift effect: experiments and theory‖, phys. rev. b, vol. 93, 214406, 2016. [24] r. jansen, ―silicon spintronics―, nature materials, vol. 11, 400, 2012. [25] y. song and h. dery, ―magnetic-field-modulated resonant tunneling in ferromagnetic-insulatornonmagnetic junctions‖, phys. rev. let. vol. 113, 047205, 2014. [26] z. yue, m.c. prestgard, a. tiwari, and m.e. raikh, ―resonant magnetotunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport‖, phys. rev. b, vol. 91, 195316, 2015. [27] v. sverdlov and s. selberherr, ―current and shot noise at spin-dependent hopping through junctions with ferromagnetic contacts‖, solid-state electronics, submitted, 2018. [28] v. sverdlov and s. selberherr, ―spin correlations at hopping in magnetic structures: from tunneling magnetoresistance to single-spin transistor‖, in proceedings of the spie conference nanoscience+engineering, 2018, [29] w. yan, o. txoperena, r. llopis et al., ―a two-dimensional spin field-effect switch‖, nature communications, vol. 7, 13372, 2016. https://www.intel.com/content/www/us/en/architecture-and-technology/intel-optane-technology.html 544 v. sverdlov, s. selberherr [30] a. fert, ―nobel lecture: origin, development, and future of spintronics‖, rev.modern phys., vol. 80, 1517, 2008; p. a. grunberg, ―nobel lecture: from spin waves to giant magnetoresistance and beyond‖, rev. modern phys., vol. 80, 1531, 2008. [31] s. ikeda, j. hayakawa, y. ashizawa et al., ―tunnel magnetoresistance of 604% at 300 k by suppression of ta diffusion in cofeb/mgo/cofeb pseudo-spin-valves annealed at high temperature‖, appl. phys. lett., vol. 93, 082508, 2008. [32] j. slonczewski, ―current-driven excitation of magnetic multilayers‖, j. magnetism and magnetic materials, vol. 159, l1, 1996. [33] l. berger, ―emission of spin waves by a magnetic multilayer traversed by a current‖, phys. rev. b, vol. 54, 9353, 1996. [34] z. diao, d. apalkov, m. pakala et al., ―spin transfer switching and spin polarization in magnetic tunnel junctions with mgo and alox barriers‖, appl. phys. lett., vol. 87, 232502, 2005. [35] a. makarov, v. sverdlov, d. osintsev, and s. selberherr, ―reduction of switching time in pentalayer magnetic tunnel junctions with a composite-free layer‖, phys. stat. solidi (rrl – rapid research letters), vol. 5, pp. 420-422, 2011. [36] a. makarov, t. windbacher, v. sverdlov, and s. selberherr, ―cmos-compatible spintronic devices: a review‖, semiconductor science and technology, vol. 31, 113006, 2016. [37] s.-w. chung, t. kishi, j.w. park et al., ―4gbit density stt-mram using perpendicular mtj realized with compact cell structure‖, in iedm techn. digest, 2016, pp. 659-662. [38] s. ikeda, k. miura, h. yamamoto et al., ―a perpendicular-anisotropy cofeb–mgo magnetic tunnel junction‖, nature materials, vol. 9, 721, 2010. [39] k. watanabe, b. jinnai, s. fukami et al., ―shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions‖, nature communications, vol. 9, 663, 2018. [40] d. apalkov, b. dieny, and j.m. slaughter, ―magnetoresistive random access memory‖, proceedings of the ieee, vol. 104, 1796, 2016. [41] y.j. song, j.h. lee, h.c. shin et al., ―highly functional and reliable 8mb stt-mram embedded in 28nm logic‖, in iedm techn. digest, 2016, pp. 663-666. [42] h. sato, m. yamanouchi, s. ikeda et al., ―mgo/cofeb/ta/cofeb/mgo recording structure in magnetic tunnel junctions with perpendicular easy axis‖, ieee trans. magnetics, vol. 49, 4437, 2013. [43] j. swerts, e. liu, s. couet et al., ―solving the beol compatibility challenge of top-pinned magnetic tunnel junction stacks‖, in iedm techn. digest, 2017, pp. 866-859. [44] https://www.everspin.com/stt-mram-products [45] https://www.mram-info.com/tags/companies/samsung [46] https://www.globalfoundries.com/news-events/press-releases/globalfoundries-launches-embedded-mram22fdxr-platform [47] g. jan, l. thomas, s. le et al., ―achieving sub‐ns switching of stt‐mram for future embedded llc applications through improvement of nucleation and propagation switching mechanisms‖, in proceedings of the symp. vlsi technology and circuits, 2016, p.18. [48] i.m. miron, k. garello, g. gaudin et al., ―perpendicular switching of a single ferromagnetic layer induced by in-plane current injection‖, nature, vol. 476, 189, 2011. [49] l. liu, j. lee, t.j. gudmundsen et al., ―current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin hall effect‖, phys. rev. lett., vol. 109, 096602, 2012. [50] l. liu, c.-f. pai, y. li et al., ―spin-torque switching with the giant spin hall effect of tantalum‖, science, vol. 336, 555, 2012. [51] a. brataas and k.m.d. hals, ―spin–orbit torques in action‖, nature nanotechnology, vol. 9, 86, 2014. [52] t. taniguchi, j. grollier, and m.d. stiles, ―spin-transfer torques generated by the anomalous hall effect and anisotropic magnetoresistance‖, phys. rev. appl., vol. 3, 044001, 2015. [53] d. macneil, g.m. stiehl, m.h.d. guimaraes et al., ―control of spin–orbit torques through crystal symmetry in wte2/ferromagnet bilayers‖, nature physics, vol. 13, 300, 2017. [54] s.-w. lee and k.-j. lee, ―emerging three-terminal magnetic memory devices‖, in proceedings of the ieee, vol. 104, 1831, 2016. [55] k.u. demasius, t. phung, w. zhang et al., ―enhanced spin–orbit torques by oxygen incorporation in tungsten films‖, nature communications, vol. 7, 10644, 2016. [56] j. han, a. richardella, s.a. siddiqui et al., ―room-temperature spin-orbit torque switching induced by a topological insulator‖, phys. rev. lett., vol. 119, 077702, 2017. [57] y. wang, d. zhu, y. wu et al., ―room temperature magnetization switching in topological insulatorferromagnet heterostructures by spin-orbit torques‖, nature communications, vol. 8, 1364, 2018. [58] d.c. mahendr, r. grassi, j.-y. chen et al., ―room-temperature high spin–orbit torque due to quantum confinement in sputtered bixse(1–x) films‖, nature materials, vol. 17, 800, 2018. https://www.everspin.com/stt-mram-products https://www.mram-info.com/tags/companies/samsung https://www.globalfoundries.com/news-events/press-releases/globalfoundries-launches-embedded-mram-22fdxr-platform https://www.globalfoundries.com/news-events/press-releases/globalfoundries-launches-embedded-mram-22fdxr-platform demands for spin-based nonvolatility in emerging digital logic and memory 545 [59] n. huynh, d. khang, y. ueda, and p.n. hai, ―a conductive topological insulator with large spin hall effect for ultralow power spin–orbit torque switching‖, nature materials, vol. 17, 808 2018. [60] s. fukami, t. anekawa, c. zhan, and h. ohno, ―a spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration‖, nature nanotechnology, vol. 11, 621, 2016. [61] g. yu, p. upadhyaya, y. fanet et al., ―switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields‖, nature nanotechnology, vol. 9, 548, 2014. [62] g. yu, l.-t. chang, m. akyol et al., ―current-driven perpendicular magnetization switching in ta/cofeb/[taox or mgo/taox] films with lateral structural asymmetry‖, appl. phys. lett., vol. 105, 102411, 2014. [63] s. fukami, c. zhang, s. duttagupta et al., ―magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system‖, nature materials, vol. 15, 535, 2016. [64] a. van den brink, g. vermijs, a. solignac et al., ―field-free magnetization reversal by spin-hall effect and exchange bias‖, nature communications, vol. 7, 10854, 2016. [65] y.-c. lau, d. betto, k. rode et al., ―spin–orbit torque switching without an external field using interlayer exchange coupling‖, nature nanotechnology, vol. 11, 758, 2016. [66] y.-w. oh, s.-h.c. baek, y.m. kim et al., ―field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures‖, nature nanotechnology, vol. 11, 878, 2016. [67] c.k. safeer, e. jué, a. lopez et al., ―spin-orbit torque magnetization switching controlled by geometry‖, nature nanotechnology, vol. 11, 143, 2016. [68] a. makarov, t. windbacher, v. sverdlov, and s. selberherr, ―concept of a sot-mram based on 1transistor-1mtj-cell structure‖, in proceedings of the conference solid state devices and materials (ssdm), 2015, pp. 140-141. [69] v. sverdlov, a. makarov, and s. selberherr, ―two-pulse sub-ns switching scheme for advanced spinorbit torque mram‖, solid-state electronics, submitted, 2018. [70] k. garello, f.yasin, s couet et al., ―sot‐mram 300mm integration for low power and ultrafast embedded memories‖, in proceedinghs of the symp. vlsi technology and circuits, 2018, p.c8-2. [71] t. hany, t. endoh, d. suzuki et al., ―standby-power-free integrated circuits using mtj-based vlsi computing‖, in proceedings of the ieee, 2016, vol. 104, 1844. [72] h. mahmoudi, t. windbacher, v. sverdlov, and s. selberherr, ―rram implication logic gates‖, patent: international, no. wo 2014/079747 a1; patent priority number ep 12193826.0; submitted: 201311-13. [73] h. mahmoudi, v. sverdlov, and s. selberherr, ―mtj-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems‖, in proceedings of the european solidstate device research conference (essderc), 2012, pp. 254-257. [74] a. jaiswal, a. agrawal, and k. roy, ―in-situ, in-memory stateful vector logic operations based on voltage controlled magnetic anisotropy‖, scientific reports, vol.8, 5738, 2018. [75] b. behin-aein, d. datta, s. salahuddin, and s. datta, ―proposal for an all-spin logic device with builtin memory‖, nature nanotechnology, vol. 5, 266, 2010. [76] t. windbacher, h. mahmoudi, v. sverdlov, and s. selberherr, ―spin torque magnetic integrated circuit‖, patent: international, no. wo 2014/154497 a1; patent priority number ep 13161375.4; submitted: 2014-03-13, granted: 2014-10-02. [77] t. windbacher, a. makarov, v. sverdlov, and s. selberherr, ―a universal nonvolatile processing environment‖, in "future trends in microelectronics journey into the unknown", s. luryi, j. xu, a. zaslavsky (ed); j. wiley&sons, 2016. [78] d. ielmini and h.-s.p. wong, ―in-memory computing with resistive switching devices‖, nature electronics, vol. 1, 333, 2018. [79] l.o. chua, (1971), ―memristor—the missing circuit element‖, ieee trans. circuit theory, vol. ct18, 507, 1971. [80] y. ma and t. endoh, ―a novel neuron circuit with nonvolatile synapses based on magnetic-tunneljunction for high-speed pattern learning and recognition‖, in proceedings of the asia-pacific workshop fundam. appl. adv. semicond. devices, vol. 4b-1, 2015, pp. 273-278. [81] https://newsroom.intel.com/editorials/intels-new-self-learning-chip-promises-accelerate-artificialintelligence/, https://venturebeat.com/2017/05/10/nvidia-unveils-massive-ai-processing-chip-tesla-v100/ https://newsroom.intel.com/editorials/intels-new-self-learning-chip-promises-accelerate-artificial-intelligence/ https://newsroom.intel.com/editorials/intels-new-self-learning-chip-promises-accelerate-artificial-intelligence/ https://venturebeat.com/2017/05/10/nvidia-unveils-massive-ai-processing-chip-tesla-v100/ facta universitatis series: electronics and energetics vol. 33, no 4, december 2020, pp. 571-581 https://doi.org/10.2298/fuee2004571m © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd power transformer health index estimation using evidential reasoning srdjan milosavljević 1 , aleksandar janjić 2 1 electrotechnical institute “nikola tesla” belgrade, serbia 2 university of niš, faculty of electronic engineering, niš, serbia abstract. market-oriented power distribution system requires a well-planned budget with scheduled preventive and corrective maintenance during a replacement of units that are in an unsatisfactory condition. in recent years, the concept of the transformer health index as an integral part of resource management was adopted for the condition assessment and ranking of ets. however, because of the lack of regular measurement and inspections, the confidence in health index value is greatly reduced. the paper proposes a novel methodology for the et condition assessment and the lifetime increase through the establishment of priorities for control and maintenance. the solution is based on the upgraded health index, where the confidence to the measurement results is calculated using evidential reasoning algorithm based on dempster – shafer theory. a novel, two – level hierarchical model of et health index is proposed, with real weighting factors values. this way, the methodology for et ranking includes the value of available information to describe et current state. the proposed methodology is tested on real data of an installed et and compared with the traditional health index calculation. key words: dempster shaffer, evidential reasoning, health index, condition evaluation 1. introduction reliability of energy power transformers (ets) is vital in maintaining the stability of the power system. the market-oriented system and deregulation in the electricity industry requires a well-planned schedule of preventive maintenance and corrective maintenance or replacement of units that are in unsatisfactory condition. however, inspection and testing schedules are predetermined and defined by legislation or internal regulations and company rules for all substations, regardless of their status and importance [1]. in the current practice of most electric utilities, condition diagnostics of each individual et has been presented descriptively, especially in the field of chemical and electrical tests. in recent years, work has been done on defining a methodology to perform an integral quantification of et states based on the results of chemical and electrical tests, received march 5, 2020; received in revised form may 7, 2020 corresponding author: aleksandar janjić faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia e-mail: aleksandar.janjic@elfak.ni.ac.rs 572 s. milosavljevic, a. janjic maintenance data and work history data, by introducing a state index or so-called "health index" (hi) which would rank et by its actual condition. transformer indexing by operating condition, with additional risk analysis, enables a better understanding of the availability and reliability of large transformer populations. hi is a tool that combines the results of in-service electrical testing, laboratory (chemical) testing of transformer oil, maintenance data and work history data to manage basic resources and build priorities when designing maintenance plans using a numerical ranking of transformer status and capital investment. in [2], a practical hi calculation method is given, combining the impact of all available data and criteria based on the common practices and technical standards. based on the standard model of twenty-four diagnostic factors, additional three factors (loss factor at very low frequency, conductivity factor and polarization index) are used for the hi calculation in [3]. hi concept can be extended to other equipment, like in [4], where hi was determined for a number of around 2000 secondary substations, each consisting of a mv switchgear, mv/lv transformer and lv rack. a comprehensive study of previous research related to transformer health index by using mathematical models, algorithm or expert judgment is given in [5]. the problem with the traditional hi calculation is the generation of an overall assessment about the transformers condition by aggregating the above judgments in a rational way. furthermore, very few researches are dealing with the uncertainties, accuracy and confidence of the inspection results. the evidential reasoning (er) approach is suitable method for dealing with the aggregation problem, turning a transformer condition assessment problem into an multi-criteria decision solution. the process can model various types of qualitative and quantitative uncertainties and is developed on the basis of dempstershafer evidence theory [6] and evaluation analysis model [7].with the introduction of the concepts of belief structure [8, 9] and the belief decision matrix, it became possible to model various types of uncertainties in a unified format. in recent period, the usage of er methodology has been applied for the et condition assessment. in [10], various dissolved gas analysis (dga) methods have been given different subjective judgment grades. then, the concept of a preference degree was introduced to quantify these evaluation grades and subjective judgments with uncertainty. er approach is used in [11] to transformer winding assessment based on frequency response analysis (fra), but the degree of uncertainty, like in the previous study, relies only on the expert’s judgement. the integrated fuzzy and evidential reasoning model is presented in [12], with previous operation history, results of the latest inspection and states of the onload tap changer taken as evidence to assess the working state of the transformer. the fuzzy model is proposed for generating the original basic probability assignments for the second-level model. the testing data of indices are normalized according to the attention value on transformer tests and operation standards, but the practical grade assessment of different et components has not been analysed. this paper presents the new methodology for the et condition assessment and prioritization, solving three main problems of previous condition assessment approaches:  rational aggregation of different et components,  uncertainties, accuracy and confidence of the inspection results  consistent grade assessment and weighting of different et components. power transformer health index estimation using evidental reasoning 573 the novel methodology is based on the upgraded hi where the er methodology has been used for the quantification of uncertain data, as a general, multi-level evaluation process for dealing with multi-criteria decision problems. a basic tree structure necessary for er assessment is developed based on the modified two-level transformer model and individual hi of every component. the importance of different components and different inspection methods are both evaluated by the real and practical weighting factors used in et maintenance practice. the et condition is represented as a belief distribution over all possible health states. the comparison with the traditional hi calculation method shows that the novel methodology gives more accurate results in the presence of obsolete and inaccurate measuring data. the rest of the paper is organized as follows. after the introductory section, section 2 presents the methodology: briefly outlines the hi approach and how it works as prioritization method, and explains the evidence reasoning algorithm. section 3 provides an illustrative example of the proposed methodology, data analysis and a discussion, while section 4 gives a conclusion and further research activities. 2. health index assessment 2.1. health index definition in recent years, the numerical assessment (indexing) of the current state of et and other high-voltage equipment in plants assigning a hi emerges as a tool that could effectively provide a transition to condition based maintenance. hi is a numerical value that can be used to estimate the overall condition of an et. by individually evaluating the most representative key factors that are vital to the reliable operation of transformers and mathematically aggregating them into a quantitative index, this value provides information on the "health" of the et. with this index, it is possible to evaluate the state of a large population of distribution transformers and group them according to the state. introducing this concept, the availability and reliability will increase while reducing maintenance costs. the assessment of the condition of an et is based on [13]:  results of electrical and chemical tests  maintenance information  transformer work history (previous loading)  condition of equipment: isolators, cooling system, transformer tank, expansion tank and auxiliary equipment  the estimated condition of the paper insulation  expert opinion. hi represents the sum of these estimates. it is very important to view the health index as a variable parameter because, by performing a multi-parameter analysis of the condition, it changes over the life of the et [14] the assessment of the condition of the et should include an assessment of the condition of the key parts: magnetic core and coil, solid insulation and insulating oil, bushings and voltage regulators, cooling system, transformer tank, expansion tank and auxiliary equipment. the assessment is based on the results obtained by applying appropriate test methods in the field of chemical and electrical testing and visual inspection as well as evaluation of load histories [15, 16]. the health indices for each of these parts, as well as the et hi must be determined. 574 s. milosavljevic, a. janjic 2.2. weighting factors of examination methods the transformer health index should include an assessment of the condition of its key parts (table 1). each part of the et is assigned a weight factor wd based on the impact it has on the overall condition of the et. the impact of part of et is also estimated according to the current statistics of the place of occurrence of failure in et [11]. weighting factors are given based on experience, and can take the integer value from 1 to 5, as shown in table 1. the source of weighting factors values is the industry practice. the condition monitoring and assessment is performed for the long time period in serbian power industry and the factors are the result of accumulated practice and experience. the more detailed explanation is given in [17]. table 1 weighting factors for different et components no et component weighting factor (wd) 1 magnetic core 3 2 geometry end electric contacts of windings 4 3 insulation 4 4 bushings 5 5 on line tap changer 5 6 dissolved gas analysis (dga) for the active part 5 7 transformer oil 4 8 transformer tank and auxiliary equipment 2 9 work history 3 different test methods are used to evaluate the condition of each of the above parts of the et. some parts are joined by a group of appropriate test methods, each corresponding to a weight factor wm = (1–5), depending on how accurately the results of that method can describe the state of et component (table 2). table 2 weighting factors of different inspection methods et component no inspection method weighting factor (wm) magnetic core 1 open circuit test/ sfra 5 geometry end electric contacts of windings 2 resistance testing 5 3 leakage inductance test /sfra 5 insulation 4 insulation resistivity/tgδ and capacitance test 5 5 pdc/rvm/fds/water content in oil 4 6 furan derivatives analysis 3 bushings 7 tgδ and capacitance 4 on line tap changer 8 static/dynamic resistance testing 5 dga analysis for the active part 9 dissolved gas analysis (dga) 4 transformer oil 10 physical and chemical oil characteristics 5 11 content of water in oil 4 transformer tank and auxiliary equipment 12 testing of cooling system and auxiliary equipment 2 13 visual inspection-/leakage control 2 work history 14 loading and operation history 3 power transformer health index estimation using evidental reasoning 575 since the dissolved gas analysis (dga) of the transformer oil sample may indicate a problem of overheating or the occurrence of particles, but it cannot reliably define the location of the resulting fault, it is singled out as special category. this limited its impact on the value of total hi, but not on specific components, such as windings or cores. 2.3. overall health index the overall health index of a transformer can be calculated using: n di di i n di i o w hi w     (1) od is a grade for each individual et part in the range 0 ≤ od ≤ 3: 1 1 k mi mi i d n mi o w o w      (2) in equation (2), n corresponds to the number of components, while k corresponds to the number of test methods for which there are applicable results and which assess the state of a given system. the estimation of the om method is given by an expert on the basis of the results of the last and previous tests, experience and specificity of individual ets, and using the criteria given in the applicable standards and technical recommendations. the possible range is 0 ≤ om ≤ 3. the state estimates for electrical measurements are given in descriptive terms:” good”, “moderately good”, “moderately bad”, and “bad. the numerical range of each corresponding estimates for the health index calculation is shown in table 3. table 3 comparison of electrical and chemical test scores with appropriate numerical estimates for hi calculations test results hi good 3 moderately good 2 ≤ hi < 3 moderately bad 1 ≤ hi < 2 bad < 1 given that three-stage grading is usually used to diagnose the condition: "good", "doubtful" and "poor", the second grade in the methodology is divided into two grades: "moderately good" and "moderately bad". the criteria for the two grades is the same the difference is that the “moderately good” rating indicates dubious results, but without major changes over time, e.g. comparing the last two to three trials and continuing the follow-up with more frequent testing. on the other hand, the rating "moderately bad" indicates a growing trend of deterioration of the transformer state, and it tightens control by more frequent testing, recommends additional testing, or emphasizes the need to plan for a specific intervention in the coming period. because of irregular inspection period, it is hard to perform accurate yearly et condition assessment. some data may be old several years and the main problem in interpretation is the 576 s. milosavljevic, a. janjic lack of confidence of testing results. in this paper, evidential reasoning is used for the quantification of different parameters and the algorithm is presented in the following section. 2.4. evidential reasoning algorithm in a two level hierarchy of attributes with a general attribute at the top level and l basic attributes at the lower level ei (i = 1, …, l ) it is possible to define a set of low level attributes as follows: e = {e1, …ei,… el}. (3) the weights of the attributes are presented by  = {1, …i, …l} where i is the relative weight of the ith lower level attribute (ei) with value between 0 and 1 (0  i  1). the evaluation grades are represented by h = {h1, …hn, …hn}, (4) (it is assumed that hn+1 is preferred to hn ) an assessment for ith basic attribute ei may be represented by the following distribution: s(ei) = {(hn,n,i), n = 1,…n} i = 1,…, l; (5) where n,i denotes degree of belief and n,i  0, 1, 1 n n i n    . if 1, 1 n n i n    then assessment s(ei) is complete. in opposite case, assessment s(ei) is incomplete. eq. (6) denotes a complete lack of information on ei 0, 1 n n i n    (6) let hn be a grade to which the general attribute is assessed with certain degree of belief n. the problem is to generate n by aggregating the assessments for all associated basic attributes ei. for this purpose, following algorithm is used. let mn,i be a basic probability mass representing the degree to which basic ith attribute ei supports judgment that the general attribute y is assessed to the grade hn. respectively, let mh,i be a remaining probability mass unsigned to any individual grade after all the n grades, concerning the ei attribute, are considered. the basic probability mass is calculated in (7): mn,i=in,i n=1,…, n. (7) the weight normalization is given by the following expression: 1 1 n n n    (8) remaining probability mass is calculated as: 1 1, ,. 1 1 n n m mn i i n ih i n n         (9) suppose that ei(i) is a subset of the first i attributes ei(i)={e1,e2,…, ei} and according to that mn,i(i) can be probability mass defined as the degree to which all the i attributes support the judgment that y is assessed to the grade hn. also mh,i(i) is remaining power transformer health index estimation using evidental reasoning 577 probability mass unassigned to individual grades after all the basic attributes in ei(i) have been assessed. probability masses mn,i(i), mh,i(i) for ei(i) can be calculated from basic probability masses mn,j and mh,j for all n=1,…, n, j=1,…, i. concerning all above statements, the recursive evidential reasoning algorithm can be summarized by the following expressions: (10) , 1, ( 1) ( 1) , ( ) m k m mh ih i i i i h i i    (11) 1 1 1, ..., 1, 1( 1) , ( )1 1 n n k m m i lj ii i t i it j j t                    (12) where ki(i+1) is a normalizing factor so that 1 , ( 1) , ( 1)1 n m m n i i h i in      is ensured. it is important to note that basic attributes in ei(i) are numbered arbitrarily and that initial values are mn,i(1)=mn,1 and mh,i(1)=mh,1. and finally, in original evidential reasoning algorithm combined degree of belief for a general attribute n is given by: , 1, ..., , ( ) m n nn n i l    (13) 1 , ( ) 1 n m nh h i l n      (14) while h denotes degree of incompleteness of the assessment. the algorithm for the et assessment can be presented in following five steps: step 1. define a set of l inspection methods (basic attributes) influencing the assessment of the et component state (m is the number of components upper level attributes). determine the importance weighting of every inspection method wd and each component wm. step 2. for each attribute εi and evaluation grade hn a degree of belief βn is assigned. mn,i a basic probability mass, representing the degree to which the ith inspection method εi supports a hypothesis that the health index is assessed to the nth evaluation grade hn is calculated (eq. 7–9). step 3. the combined probability masses are generated by aggregating all the basic probability assignments using the recursive er algorithm (12–14). this step is repeated for each basic attributes for one component. step 4. calculate the combined degrees of belief for a higher level property. the combined probability masses are generated by aggregating all the probability assignments from previous step using the recursive er algorithm (12–14). this step is repeated for each et component. step 5. the procedure is terminated and the utility can be calculated. the flowchart is presented graphically on figure 1. ( ) 1, ...,, 1 , 1 , 1, ( 1) ( 1) , ( ) , ( ) , ( ) m k m m m m m m n nn i h i n in i i i i n i i n i i h i i        578 s. milosavljevic, a. janjic l, m, n, wd, wm β i,j , m i,j all attributes are calculated? combined degree of belief for a general attribute β n combined degrees of belief for a component all components are calculated? process terminated fig. 1 flowchart for the et condition assessment the methodology is illustrated on a real data from an et operating in serbian distribution utility and compared with the traditional hi calculation. 3. case study the methodology for the condition assessment will be applied to the existing transformer 110/35/10 kv, 20/20/10mva operating in eps (electric power industry of serbia). starting from a complete model presented in tables 2 and 3, a reduced model concerning only the main transformer parts without the online tap changer is presented on figure 1. because of different dates of inspection methods, different degrees of belief are presented in the table. the degree of belief denotes the source’s level of confidence when assessing the level of fulfilment of a certain property. for instance, due to the lack of frequency domain spectroscopy (fds) test, all belief values equal to zero. power transformer health index estimation using evidental reasoning 579 (10) (11) (4) (5) (6) (9) (2) (3) fig. 2 hierarchical scheme for transformer hi assessment numbers above the inspection methods in figure 2 represent the ordinal number of inspection method listed in table 2. actual gradings for the transformer 110/35/10 kv were effectuated during regular inspection and maintenance activities and they are presented in table 4. results for physical and chemical measurements, active resistance and leakage resistance are two years old. table 4. transformer assessment using traditional hi oil insulation active part windings wd 4 4 5 4 wm 5 4 5 4 3 5 5 phys, chem h20 tgδ fds furan dga r l om 3 2 1 3 2 3 3 using the traditional hi calculation method (equations 2), the grade od for oil, insulation, active part and windings equals 2.56, 1.75, 2 and 3, respectively. using equation (3), the value of hi is given in (15). 4 2,56 4 1,75 5 2 4 3 2,3 17 n di di i n di i o w hi w              (15) as stated before, some measurements are not actual (two years old) and some inspection methods are not absolutely accurate. the new methodology require the initial degrees of belief listed in table 5. weighting factors for et component (wd) and for testing method (wm) are also presented in the table. starting from values in tables 2 and 3, factors are normalized to fulfil the condition (8). 580 s. milosavljevic, a. janjic table 5 initial data for the degrees of belief calculation oil insulation active part windings wd 0,24 0,24 0,28 0,24 wm 0,55 0,45 0,41 0,34 0,25 0,5 0,5 hi phys, chem (βi,1) h20 ( βi,2) tgδ ( βi,1) fds ( βi,2) furan ( βi,3) dga (βi) r ( βi,1) l ( βi,2) 3 0,5 0 0 0 0,8 0 0,5 0,5 2 0,5 0,8 0 0 0 0,9 0,3 0,3 1 0 0,2 0,8 0 0 0 0 0 0 0 0 0 0 0 0 0 0 recursively using equations (12) (14) for the aggregation of probability masses for individual inspection methods, probability masses for individual et components are obtained and represented in table 6. for instance, assessment of the transformer oil (oil) for the grade h3 = “good”, h2 = “moderately good”, h1 = “moderately bad” and h0 = “bad”, equal to 0.17, 0.44, 0.045 and 0 respectively. the remaining probability mass (mhi) equals 0.34. table 6 degrees of belief for main transformer components β i,3 βi,2 βi,1 βi,0 mh i oil 0,17 0,44 0,045 0 0,34 insulation 0,062 0 0,14 0 0,8 dga 0 0,252 0 0 0,748 windings 0,153 0,07 0 0 0,777 by using equations (12 14) and with the values calculated in step 3, we get the combined degrees of belief for the h3 = “good”, h2 = “moderately good”, h1 = “moderately bad” equal to 0.32, 0.175, and 0.08 respectively. using the traditional hi calculation method, the transformer is graded as “moderately good” (table 3). the er methodology, however, gives the distribution of belief states, with 0.44 degree of belief that the transformer is in moderately good state, and the significant value that the transformer could be in the better state (0.17). according to current practice in eps, grading the transformer in category 2, means that inspection should be carried out more often, resulting in increased expenses and non-supplied energy. further research will be focused on the estimation of financial losses resulting from the interruption of electricity supply that can be caused by an et failure. 4. conclusions calculating the transformer health index produces an extremely useful tool for quality resource management, analysis of the current state of transformers in the network and planning preventative maintenance. this index provides an assessment of the status of the power transformer, which makes it possible to perform a comparative analysis between individual transformers, parts of the distribution system, and to set priorities and adequately channel power transformer health index estimation using evidental reasoning 581 financial resources and plan corrective measures to improve the hi that is, to ensure transformer operational readiness. the methodology presented in the paper is using er approach which is one of the latest developments in multi-criteria decision-making, applied for the prioritization of et according to their condition. the methodology proved to be very useful in the field of reliability and stability of the distribution system. unlike the traditional hi calculation method, the er methodology gives the distribution of belief states that the transformer could be in better condition. according to current practice in eps, grading the transformer in lower categories means that inspection should be carried out more often, resulting in increased expenses and non-supplied energy. currently, the methodology doesn’t address the precise economic model for the estimation of financial losses resulting from unnecessary interruption of electricity supply caused by inspections or on the other hand, interruptions that can be caused by failure. therefore, further research will be focused on the more precise estimation of financial losses resulting from the interruption of electricity supply that can be caused by an et failure or unnecessary inspections. references [1] d stevanović, a janjić, ”influence of circuit breaker replacement on power station reliability”, facta universitatis, series: electronics and energetics, vol. 32, no. 3, pp. 331–344, 2019. [2] a. n. jahromi, r. piercy, s. cress, j. r. r. service, w. fan, “an approach to power transformer asset management using health index”, ieee electrical insulation magazine, vol. 25, no. 2, pp. 20–34, 2009. [3] b. gorgan, p.v. notingher, v.l. badicu, g. tanasescu, “calculation of power transformers health indexes”, annals of the university of craiova, electrical engineering series, 2010 no. 34, pp. 13–18, [4] m. vermeer, j. m. wetzer, p.c.j.m. van der wielen, e. de haan, e. de meulemeester, asset-management decision-support modeling, using a health and risk model. 2015 ieee eindhoven powertech 1–6. [5] a. azmi, j. jasni, n. azis, m.z.a .ab. kadir, “evolution of transformer health index in the form of mathematical equation”, renewable and sustainable energy reviews, vol. 76, pp. 687–700, 2017. [6] g.a. shafer, “mathematical theory of evidence”. princeton university press, princeton, 1976. [7] z.j. zhang, j.b. yang, d.l. xu, “a hierarchical analysis model for multi-objective decision making. analysis, design and evaluation of man–machine system”, oxford, uk, pp. 13–18, 1990. [8] j.b. yang, m.g. singh, “an evidential reasoning approach for multiple attribute decision making with uncertainty”, ieee transactions on systems, man, and cybernetics, vol. 24, no. 1, pp. 1–18, 1994. [9] j.b. yang, d.l. xu, ”on the evidential reasoning algorithm for multi-attribute decision analysis under uncertainty”, ieee transactions on systems, man and cybernetics part a systems and humans, vol. 32, no. 3, pp. 289–304, 2002. [10] w. h. tang, k. spurgeon, q. h. wu, z. j. richardson, “an evidential reasoning approach to transformer condition assessments”, ieee transactions on power delivery, vol. 19, no. 4, 2004. [11] a. shintemirov, w.h. tang, q.h. wu, “transformer winding condition assessment using frequency response analysis and evidential reasoning”, iet electr. power appl., vol. 4, no. 3, pp. 198–212, 2010. [12] r. liao, h. zheng, s. grzybowski, l. yang, y. zhang, and y. liao, “an integrated decision-making model for condition assessment of power transformers using fuzzy approach and evidential reasoning”, ieee transactions on power delivery, vol. 26, no. 2, 2011. [13] e. duarte, d. falla, j. gavin, m. lawrence, t. mcgrail, d. miller, p. prout, b. rogan, “a practical approach to condition and risk based power transformer asset replacement”, in proceedings of the ieee international symposium on electrical insulation ieee, 2010. [14] f. scatiggio, a. fraioli, v. iuliani, m. pompili, “health index: the terna’s practical approach for transformers fleet management”, cigre, paris, 2014. [15] n. dominelli, “equipment health rating of power transformers” in proceedings of the ieee international symposium on electrical insulation indianapolis, usa, september, 2004, pp. 163–168. [16] life management techiques for power transformers”, cigre working group 12.18, brochure 227, 2003 [17] j. ponocko et all. “health index as the part of asset management in the area of power transformers” (in serbian), cigre conference, zlatibor, 2015. https://ieeexplore.ieee.org/xpl/conhome/5542406/proceeding https://ieeexplore.ieee.org/xpl/conhome/5542406/proceeding 11872 facta universitatis series: electronics and energetics vol. 37, no 2, june 2024, pp. 261-276 https://doi.org/10.2298/fuee2402261s © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper deep learning-based modified transformer model for automated news article summarization b. srinivas1, lavanya bagadi1, naresh k. darimireddy2, p. surya prasad1, sivaji satrupalli3, anil kumar b.4 1mvgr college of engineering (a), vizianagaram, india-535005 2*lendi institute of engineering & technology (a), vizianagaram, india-535005 3vignan's f s t r (deemed to be university), guntur, india-522213. 4gmr institute of technology (a), rajam, india -532127 orcid ids: b. srinivas https://orcid.org/0000-0002-9562-2325 lavanya bagadi https://orcid.org/0000-0002-0310-2411 naresh k. darimireddy https://orcid.org/0000-0002-0033-716x p. surya prasad https://orcid.org/0000-0002-2767-123x sivaji satrupalli https://orcid.org/0000-0002-9319-0493 anil kumar b. https://orcid.org/0000-0002-3468-3650 abstract. the amount of textual data on the internet is increasing enormously, so data summarization into text has become essential. as generating text summaries manually is an arduous task and humans are generally prone to make mistakes, deep learning techniques have evolved to overcome this problem. modified transformer-based deep learning models with varying encoder-decoder and feed-forward network layers are proposed to develop an abstractive summary of the news articles. the proposed transformer model provides the advantage of parallelization with the help of multiple attention head layers to process long sentences, and hence, better text summarization performance is achieved. these models are trained on an ‘in-shorts’ dataset, and the proposed model is compared with the pegasus-cnndaily-mail, bart-large-cnn, and distilbart-cnn-12-6 models on the cnn/dailymail dataset. the performance is evaluated in terms of the rouge score by comparing it with the existing recurrent neural network (rnn) model. the suggested transformer model achieved a rouge score of 0.33, surpassing the rnn model score of 0.17. this innovative approach can be employed on extensive textual data to extract summaries or headlines. key words: natural language processing, deep learning, abstractive summarization, large language model, rnn, transformer model, news article summarization received june 02, 2023; revised december 15, 2023 and december 30, 2023; accepted january 09, 2024 corresponding author: naresh k. darimireddy lendi institute of engineering & technology (a), vizianagaram, india-535005. e-mail: yosuna@ieee.org https://orcid.org/0000-0002-0310-2411 https://orcid.org/0000-0002-0033-716x https://orcid.org/0000-0002-2767-123x https://orcid.org/0000-0002-9319-0493 https://orcid.org/0000-0002-3468-3650 262 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. 1. introduction in recent years, internet usage has increased, and without using any physical means, everything is being uploaded on the internet for a faster spread. due to the increase in data that is being uploaded heavily into the internet, storage has become a problem. the earlier usage of uploading data for summarization was done manually, and it involves human mistakes and is a time-consuming process. using deep learning to summarize and upload the news data to the internet saves time. it reduces the space occupied for the data to generate a summary. due to the explosive growth of textual data [1], attention to developing informative summaries using automatic methods is extensively trending. in today's busy schedule, people have limited time to read lengthy texts, making investing time in superfluous information impractical. to overcome this problem, automation can filter misinformation from critical information, but it is challenging. extractive summaries used reinforcement learning-based, recurrent neural network-based encoders, and seq2seq encoder-decoder models to address this. however, with the advancement of deep learning models like transformer and rnn, the earlier approaches used to generate abstractive summaries, including structure-based ones like graphs, trees, and ontology-based, etc., have become obsolete. summarization condenses extensive information into a concise form that captures the central theme or idea. text summarization primarily aims to transform lengthy texts into shorter yet meaningful representations. presently, abstractive summaries are advancing in producing fluent and flexible summaries. further, text summarization can serve many purposes, including generating email summaries, condensing news headlines, summarizing movie reviews, outlining student notes, and providing concise information for government officials and business professionals. it is also instrumental in translating medical data for doctors, condensing legal documents, generating novel or book summaries, and assisting consumers in deciding whether to read the content. it also plays a role in code summarization. automatic summarization is classified into abstractive and extractive [2]. this work is mainly focused on the abstractive approach. extractive summarization generates the summary by considering the score from the article, i.e., the words or phrases are directly taken from the article and are joined to get an overview. alternatively, abstractive summarization analyses the sentences and reconstructs the summary with a meaningful sentence structure. thus, the abstractive outline is more flexible. the main contributions of this work are: 1) text summarization through rnn is implemented as an introductory model, and its performance is calculated to get a proper understanding of summarization in deep learning. 2) improvement in the performance of text summarization with the proposed model using modified transformers with varying numbers of encoder-decoder and feed-forward network layers. 3) the proposed model is compared with existing abstractive text summarization models such as pegasus-cnn_dailymail, bart-large-cnn, and distilbart-cnn12-6 on the cnn/dailymail dataset. 1.1. related work a survey on text summarization reveals the key findings from the literature in this field to address the challenge of condensing large volumes of text into concise and coherent summaries. the following summarizes the researcher's exploration of various approaches and techniques. deep learning-based modified transformer model for automated news article summarization 263 research has focused on two main approaches, namely extractive and abstractive. extractive involves selecting and arranging existing sentences, whereas abstractive generates new sentences to convey the essence of the text. integrating machine learning and nlp techniques is employed in advancing text summarization to create summaries for supervised and unsupervised learning models. the rise of deep learning [3] has led to the application of neural network models such as recurrent neural networks (rnns) [4], long short-term memory networks (lstms), [5] and transformer models like bert and gpt [6] in text summarization tasks. various researchers evaluate the quality of summaries by including metrics like rouge (recall-oriented understudy for gisting evaluation) and bleu (bilingual evaluation understudy). these metrics aim to measure the overlap and fluency of generated summaries compared to reference summaries. the literature addresses challenges in exploring various techniques, including cluster-based summarization and graph-based models, to handle the complex task of summarizing information from multiple documents. some studies focus on domain-specific outlines, tailoring approaches to the unique characteristics and requirements of particular fields such as biomedical literature, legal documents, or news articles. recent efforts have been directed towards developing realtime summarization systems to cater to the needs of summarizing information based on the dynamic nature of news and social media. among the summaries employed (abstractive and extractive), the need for abstractive summaries arises due to the limitations of extractive summaries. extractive summaries must generate coherent text and merely concatenate extracted content without verifying grammar to reproduce meaningful text. numerous abstractive summarization models have been introduced in the existing literature. the literature survey [7] highlights various approaches such as graphbased [8], rule-based [9], and semantic modeling [10]. nevertheless, these earlier models fail to leverage recent breakthroughs in deep learning, which have demonstrated enhancements in numerous natural language processing (nlp) tasks. text summarization using nlp appeared in 1958. at first, statistical approaches were used to extract the most significant words in the sentences. then, according to the score assigned to the ruling, the highest score is considered, and a summary is generated. the process mentioned above is for extractive summarization. though they can produce a resume, the process is just trimming the original text, which is not an effective way of summarizing. the model has to make the summary, which must be close to the outline generated by an expert. in contrast, the abstractive summarization methods [11] are proposed, which reads and understands the meaning of the source text or news article and then reproduces the summary meaningfully. chen et al. [12] suggested a multi-step procedure based on compression-paraphrase to rewrite a document by extracting relevant sentences for abstractive text summarization. an actor-critic algorithm was used in their model to optimize the sentence extractor and improve extraction. li et al. [13] presented an actor-critic method to distinguish the ground truth from generated summaries using a binary classifier neural network. the actor network consists of an attention-based seq2seq model and a critic network with a global summary quality estimator and a maximum likelihood estimator. zhang et al. [14] recommended a curriculum learning strategy and a reinforced algorithm to simplify the sentences. lin et al. [15] also summarized long documents using the coarse-to-fine attention method. pasunuru et al. [16] trained the pointer-generator network and introduced two new metrics, saliency and entailment, and the rouge score through the self-critic policy gradient algorithm. 264 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. kalchbrenner et al. [17] presented a byte net model to the encoder and decoder with a fixed depth for both by introducing a convolution neural network [18]. the transformer [19] is a deep learning architecture composed of a sequence of encoder and decoder layers. these layers employ the attention mechanism to capture global dependencies within sequential data [20]. vaswani et al. [19] developed a new architecture called the transformer model, which depends on a multi-head attention mechanism and feedforward network. lewis et al. [21] used transformer architecture with pre-trained models on a massive amount of text for summarization purposes. 2. dataset the dataset used for this work is ‘in-shorts’ news data. it can be used for various tasks, such as text summarization, sentiment analysis, topic modeling, etc. it consists of five columns with unique values such as headline, short (news), source, time, and publish date [22], as shown in fig. 1. the headline refers to the headline given by an expert, and the short refers to the actual news article. to perform text summarization, the headline column as the target summary and the short column as the source text are considered, and then the performance of different models is compared with the expert-written headlines in the dataset. the total number of samples in the dataset is 55,104, with a training set consisting of 53 k samples to fit the model and a test set of 2,104 samples to evaluate the model. the pre-processing steps are initiated after dropping the dataset's source, time, and publish date column values. fig. 1 sample snippet of in-short database 3. methodology the block diagram for the abstractive summarization process using a transformer-based deep learning model is shown in fig. 2. the input article is taken; pre-processing is performed deep learning-based modified transformer model for automated news article summarization 265 on the data, followed by positional encoding and masking [23, 24]. now, the tokenized and encoded text is given to the layers present in the model to train the model. then, the relationship between the input articles and the targets (headlines or summary) can be defined. then, testing data is passed onto the model to obtain its summary or headlines. fig. 2 abstractive summarization methodology 3.1. pre-processing the dataset is given as an input to the model after the pre-processing step in any nlp task. data pre-processing is done in three stages: tokenization, padding and truncating, and batching and shuffling. in tokenization, the text sequence removes punctuation marks and is converted to lowercase. internally, a vocab dictionary is present, arranged in the order of frequency by which the words occur, and then it maps the words into respective tokens. tokens are numerical representations of the sequence of terms. the padding and truncating step helps maintain the input's fixed length at the encoder. padding refers to adding unique tokens to the information with fewer tokens, whereas truncating helps reduce the tokens if more tokens are present at the input. batching and shuffling are performed for easy fetching of data. here, the data sent to the model is batched instead of passing as a single value. two utility functions are performed on the cleaned dataset, and these functions are present in the model. they are positional encoding and masking. in nlptasks like summarization, the preprocessing 266 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. order of words is essential as the meaning given by the sentence entirely changes with the order of words. so, the order of words is preserved through positional encoding. masking is mainly used in transformers to prevent the terms present after the current word from involving those in the prediction of the current word. the model is developed for encoding and decoding; then, the dataset is cleaned and sent as input to the model after positional encoding. the dataset is prepared to train the model, and pre-processing is performed on the testing dataset. after the prediction of the summary of test inputs, the rouge metric [25] is calculated for the testing data. 3.2. transformer model the sequential problem faced by most of the nlp algorithms can be overcome using a transformer model, as it uses parallelization with the help of multiple attention head layers while processing the input text. thus, the transformer model provides the advantage of processing long sentences in less time [26, 27]. the architecture of the transformer model is an encoder-decoder structure, and for normalizing the output probabilities, the softmax activation function is used at the end. the model takes a sequence of data as input. then, the embedded input words are assigned vectors based on the positioning of words in a sentence before passing through the positional encoders [21, 28]. the embeddings are received by the encoder blocks consisting of multi-head attention and feed-forward network paths, as shown in fig. 2. the relationship between the words is captured in a sentence using multi-head attention layers to compute the attention vectors for each input and to represent how each word is related to other words in the same sentence. the decoder block uses attention vectors with one vector at a time in a feedforward network. in the multi-head attention layer, independent attention networks achieve parallelization. the multi-head attention layer takes inputs and is fed to three layers to create the query(q), key(k), and value(v) vectors [30]. 𝐴𝑡𝑡𝑒𝑛𝑡𝑖𝑜𝑛 = 𝑆𝑜𝑓𝑡𝑚𝑎𝑥( 𝑄𝐾𝑇 √𝑑𝐾 )𝑉 the combination of the n attention layer gives a multi-head attention layer. 𝑀𝑢𝑙𝑡𝑖ℎ𝑒𝑎𝑑 𝑎𝑡𝑡𝑒𝑛𝑡𝑖𝑜𝑛(𝑄, 𝐾, 𝑉) = 𝐶𝑜𝑛𝑐𝑎𝑡(ℎ𝑒𝑎𝑑1, … … … . . ℎ𝑒𝑎𝑑𝑛) whereheadi = 𝐴𝑡𝑡𝑒𝑛𝑡𝑖𝑜𝑛(𝑄𝑊𝑖 𝑄 , 𝐾𝑊𝑖 𝐾 , 𝑉𝑊𝑖 𝑉) like the encoder block, the decoder has positional encoders and masked multi-head attention layers. the attention vectors from the encoder block and its masked multi-head attention layers are handed to another multi-head attention block. the feed-forward network is passed with a set of vectors where each vector gives the relation with other words in the entire document. finally, a softmax function is used after the linear layer is placed after the feed-forward network [29] at the output to convert it into a probability distribution function. deep learning-based modified transformer model for automated news article summarization 267 figure 3 and figure 4 depict the model architecture of the transformer model that contains encoder and decoder layers connected with feed-forward networks, attention layers, and normalization layers. fig. 3 transformer encoder fig. 4 transformer decoder the proposed transformer model is designed with varying layers of encoder, decoder, and feed-forward network layers and accordingly named with different model numbers as 1, 2, and so on. finally, six models were formed and tested. the following are the algorithm steps that are used while designing the transformer. transformer algorithm steps: 1. find the word embedding for the input sequence: ▪ use a pre-trained word embedding model like word2vec to convert each word in the input sequence to a vector representation. 2. find the positional information (positional encoding): ▪ generate positional encoding vectors to add to the word embeddings. ▪ for each position in the input sequence, generate a positional encoding vector using a formula like a sin(pos/10000^(2i/dim)) or cos(pos/10000^(2i/dim)), where pos are the position, and i is the index of the dimension in the embedding vector, anddim is the dimensionality of the embedding vector. ▪ add the positional encoding vectors to the word embeddings. 3. summing of word embedding and positional encoding: ▪ add the word embeddings and positional encoding vectors element-wise to get the final embeddings for each word in the input sequence. 268 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. 4. apply the query (q), key (k), and value (v) vectors to the transformer encoder: ▪ feed the embeddings to a transformer encoder layer. ▪ the encoder generates q, k, and v vectors for each position in the input sequence. ▪ use these vectors to calculate attention scores between all positions in the series. ▪ use these scores to weight the values (v) vectors and generate a context vector for each position in the sequence. ▪ feed the context vectors to the next transformer encoder layer. 5. repeat the transformer encoders for n number of times: ▪ repeat step 4 for n number of transformer encoder layers. 6. find the word embedding for the ground truth sequence: ▪ convert each word in the ground truth sequence to a vector representation using the same pre-trained word embedding model as in step 1. 7. find the positional information (positional encoding): ▪ generate positional encoding vectors for the ground truth sequence using the formula in step 2. ▪ add the positional encoding vectors to the word embeddings. 8. summing of word embedding and positional encoding and applied to the transformer decoder: ▪ add the word embeddings and positional encoding vectors element-wise to get the final embeddings for each word in the ground truth sequence. ▪ feed the embeddings to a transformer decoder layer. ▪ the decoder generates q, k, and v vectors for each position in the ground truth sequence. ▪ use the q vectors and attention scores calculated from the encoder to generate context vectors for each position in the ground truth sequence. ▪ feed the context vectors to the next transformer decoder layer. 9. the decoder also receives the output of the encoder, which now allows the decoder to attend to all the words in the input sequence: ▪ the context vectors generated in step 8 are used to calculate attention scores between all positions in the input sequence. ▪ use these scores to weight the values (v) vectors and generate a context vector for each position in the input sequence. ▪ feed the context vectors to the next transformer decoder layer. 10. repeat transformer decoders for n number of times: ▪ repeat steps 8 and 9 for n number of transformer decoder layers. 11. the output of the decoder finally passes through a fully connected layer: ▪ feed the final context vectors generated by the last transformer decoder layer to a fully connected layer. 12. followed by a softmax layer, generate a prediction for the next word of the output sequence: ▪ apply a softmax activation function to the output of the fully connected layer to get the probability distribution over the vocabulary. ▪ select the word with the highest probability as the prediction for the next term of the output sequence. ____________________________________________________________________ deep learning-based modified transformer model for automated news article summarization 269 initially, basic transformer model 1 is implemented with four layers of encoder and decoder, and four feed-forward network layers are considered. later, the number of encoder, decoder, and feed-forward network layers varies in different models for better performance. the models implemented are represented in table 1. for instance, model_6 is implemented with three encoder and decoder layers, and the number of feed-forward network layers is 4. table 1 different transformer models with layer details model encoder layers decoder layers no. of layers in feed-forward network model_1 4 4 4 model_2 5 5 4 model_3 3 3 2 model_4 4 4 2 model_5 5 5 2 model_6 3 3 4 the model_6 outperforms other models for the following reasons: ▪ model_6 has fewer encoder and decoder layers (3) compared to model_1, model_2, model_4, and model_5, which have 4 or 5 layers. this simplicity results in faster performance, potentially improving efficiency. while a more complex model might capture more abstract patterns, it could also demand more computation and memory or risk overfitting the data or missing essential information. ▪ the feed-forward network in model_6 boasts more layers (4) than model_3, model_4, and model_5, which only have two layers. this makes model_6 broader and more versatile, enhancing its ability and adaptability. a more general model introduces more variables and possibilities but raises the risk of overfitting. ▪ model_6 may be more suitable for the task and data, balancing depth and width. the optimal number of layers depends on factors such as the data's type and size, the task's goal and challenges, and the model's complexity and efficiency. ▪ model_6 also has more optimal hyperparameters, such as the number of attention heads, hidden size, dropout rate, learning rate, etc., compared to other models. these hyperparameters significantly influence the training and evaluation of the model, necessitating careful selection and adjustment to align with the task and data requirements 3.3. rnn model recurrent neural network (rnn) [31] is an artificial neural network designed for sequence data, making it well-suited for several tasks, including natural language processing, etc. the critical feature of capturing and remembering information from earlier inputs in the sequence makes it an effective tool when context or temporal dependencies are essential. the data is processed sequentially in rnn [32, 33,35], as shown in figure 5. once the first word of a sentence is processed, a hidden state is generated and is given as input to the encoder along with the next word and so on, and at last, it is given to the decoder. long-term 270 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. dependency becomes a problem in the case of long sentences due to the vanishing gradient problem. it is inefficient and time-consuming because of its sequential nature of training and difficulty with parallel training. also, it needs help to efficiently capture and model temporal lags in the data, limiting its ability to make accurate predictions where time-dependent patterns are involved. fig. 5 recurrent neural network architecture the encoder-decoder architecture has been foundational for sequence-to-sequence tasks such as machine translation, text summarization, etc. in the rnn encoder-decoder architecture shown in figure 5, a variable-length sequence is encoded into a fixed-length vector representation and decoded into another variable-length sequence. the encoder is an rnn that reads each symbol of an input sequence sequentially. each symbol is read, gives a hidden state, and is given to the next stage, and finally, the summary, c, corresponding to the whole input sequence, comes out. this is taken by the decoder, trained to generate the output sequence by predicting each word corresponding to each stage. 4. results and discussion in this paper, six variations of deep learning-based transformers are considered, in addition to rnn, for training and testing to generate text summarization of the inshorts database. the short input articles shown in table 2 are inshorts database test articles. the 'ground truth headline' (summary) represents the actual headline given by an expert. the 'predicted headline' represents the summary predicted by the pre-trained model when the input article is provided. the ground truth and predicted summaries are then compared. if deep learning-based modified transformer model for automated news article summarization 271 they are similar, the model is considered to have predicted the summary correctly, resulting in high rouge metrics; otherwise, its performance is deemed low. table 2 random samples of in-short database summarization using model_6 s.no short predicted headline ground truth headline article 1 as per a survey of britons by scottish investment company scottish widows, former british pm margaret thatcher is the most influential woman of the last two centuries. with 28% votes, thatcher was ranked ahead of marie curie (24%) and queen elizabeth ii (18%). princess diana, mother teresa, and oprah winfrey made it to the top ten of the list. thatcher voted most influential woman: uk poll. margaret thatcher, most influential woman of the last two centuries: survey article 2 on wednesday, tata motors posted a 16% yearon-year rise in its global sales to 93,355 units for january. while sales of passenger vehicles increased by 14% to 56,616 units, the commercial vehicles segment recorded a 20% growth to 36,739 units. further, sales of luxury brand jaguar land rover jumped by 25% to 45,535 units. tata motors global sales up by 16% in january india's tata motors posted a 16% rise in its global sales for january article 3 jet airways today confirmed that the five crew members who allowed playback singer sonu nigam to sing onboard the jaipur-mumbai flight on january 4 using the announcement system have been " taken off flight duty" a statement from the airline added that an inquiry had been ordered to ensure strict adherence to the flying norms in the future. jet crew suspended for sonu nigam& #39;s song on board jet airways confirms that crew members w ho allowed sonu nigam to sign off the flight have been taken off flight duty the rnn and the proposed transformer-based models are evaluated on an in-shorts dataset [22]. in line with this, full-length f1 scores of rouge-1 and rouge-l metrics are calculated. rouge is an acronym for recall-oriented understudy for gisting evaluation, a method used to measure the quality of summaries (predicted) by comparing them with human-written summaries (ground truth). rouge has different variants, including rouge-n, rouge-l, and rouge-s, which calculate the similarity of ngrams, longest common subsequences, and skip-bigrams between the summaries. various factors, such as the number, order, and meaning of the words in the outlines, influence the rouge score. a higher rouge score indicates that the summary is closer to the humanwritten summary, which is typically the standard for quality. however, a higher rouge score implies a good summary. here, the rouge-1 score gives the unigram coincidence between the predicted and ground truth summaries (summary given by expert). in contrast, rouge-l gives the longest sequence coincidence between the expected and ground truth summaries. the number of epochs indicates the number of times the entire dataset is experienced to the model, and training loss suggests how close the predicted overview of the model is to the ground truth summary. 272 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. table 3 comparison of training loss of various models epochs rnn model_1 model_2 model_3 model_4 model_5 model_6 1 7.0099 10.283 10.2868 10.289 10.2776 10.2783 10.2805 5 4.5356 5.3965 5.6915 5.2428 5.6761 5.3996 4.9721 10 3.7701 4.0926 4.5996 3.6784 4.6188 4.6366 3.2273 15 3.3071 3.6132 4.1459 2.9958 4.1504 4.1672 2.5478 20 2.9695 3.3175 3.916 2.4741 3.9022 3.905 2.0363 25 2.7154 2.5984 3.6958 2.1308 2.8659 3.6793 1.9923 30 2.5125 2.0118 3.5862 1.9091 2.1266 3.4529 1.7213 35 2.5522 1.8615 3.0541 1.7533 1.9691 2.8615 1.5527 40 2.5673 1.6587 2.6953 1.6222 1.7211 2.0514 1.4692 45 2.5688 1.6432 2.6544 1.6160 1.7122 1.9904 1.4456 50 2.5690 1.6422 2.6512 1.6114 1.7119 1.9900 1.4399 the training loss of six different transformer models and one rnn model is shown in table 3. as the models are trained for more epochs, the loss decreases gradually. model_6 has the highest loss of 10.2805 at epoch 1, but it reduces to 1.4399 at epoch 50, the lowest among all models. the rnn model starts with a loss of 7.01 and ends with a loss of 2.5690 after 50 epochs. therefore, model_6 has the best performance with a training loss of 1.4399. fig. 6 comparison of training loss for proposed models the comparison of training loss between six transformer models and one rnn model is presented in figure 6. all the models are built from scratch. model_6 has the lowest loss values among all models, indicating its superior performance. the other models have higher loss values than model_6. deep learning-based modified transformer model for automated news article summarization 273 table 4 comparison of training accuracies of various models epochs rnn model_1 model_2 model_3 model_4 model_5 model_6 1 0.2499 0 0 0 0 0 0 5 0.4364 0.1602 0.1585 0.1717 0.1051 0.172 0.1917 10 0.4679 0.2093 0.2094 0.2387 0.1809 0.2228 0.2983 15 0.4955 0.2465 0.2476 0.2873 0.2675 0.2575 0.3786 20 0.5195 0.2747 0.276 0.3221 0.3363 0.2888 0.4379 25 0.54 0.3122 0.2987 0.3487 0.3902 0.3131 0.4812 30 0.559 0.3855 0.3677 0.4169 0.4335 0.3303 0.5146 35 0.562 0.4347 0.4122 0.4487 0.4693 0.4122 0.5913 40 0.566 0.5422 0.4485 0.5869 0.679 0.4978 0.7285 45 0.569 0.5587 0.4587 0.5905 0.6872 0.5011 0.7312 50 0.571 0.5590 0.4590 0.5911 0.6890 0.5031 0.7354 the training accuracy of six transformer models and one rnn model is shown in table 4. the accuracy increases gradually as the models are trained for more epochs. model_6 has the lowest accuracy of zero at epoch 1, but it improves to 73.54% at epoch 50, the highest among all models. the rnn model has an accuracy of 24.99% at epoch 1 and 57.5% at epoch 50. therefore, model_6 performs best with a training accuracy of 73.54%, while the rnn model is inferior. fig. 7 comparison of training accuracy for proposed models the training accuracies of six transformer models and one rnn model are compared in figure 7. all the models are built from scratch. model_6 has the highest training accuracy of over 70%, while the other models have lower accuracies than it. 274 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. table 5 comparison of rouge metrics of various models model rouge-1 rouge-l rnn 0.175 0.134 model 1 0.2277 0.2275 model 2 0.111 0.11 model 3 0.318 0.266 model 4 0.232 0.232 model 5 0.2235 0.2185 model 6 0.36 0.3305 the rouge metrics of six transformer models and one rnn model are shown in table 5. rouge metrics measure the quality of the summary generated by the model by comparing it with the reference summary. a higher rouge value indicates a more efficient model. model_6 has the highest rouge-1 value of 0.36 and rouge-l value of 0.3305, making it the most efficient among all models. therefore, the machine's performance using the rnn model can be improved using a transformer-based model instead. fig. 8 comparison of rouge metrics of various models the comparison of rouge-1 and rouge-l scores between six transformer models and one rnn model is presented in figure 8. model_6 performs best with the highest values for both rouge-1 and rouge-l scores. the other models have lower scores than model_6. the proposed transformer model, model _6, is also compared with existing abstractive text summarization models such as pegasus-cnn_dailymail, bart-large-cnn, and distilbart-cnn-12-6 with respect to rouge-1, rouge-l metrics as shown in table 6. the large-sized bart (bartlarge) model is fine-tuned on cnn/dailymail to get the bartlarge-cnn model. it has 12 layers each for encoder, decoder, and hidden state. pegasuscnn_dailymail is obtained by fine-tuning the pegasus-large model on cnn/dailymail. distilbart-cnn-12-6 is a smaller version of bart trained on cnn/dailymail. it has 12 layers for the encoder and hidden state but only 6 for the decoder.the proposed model_6 is implemented with three encoder and decoder layers and several feed-forward network layers 4. it is trained on the cnn/dailymail news dataset. cnn/dailymail [34] dataset contains over 300,000 news articles from cnn and the daily mail newspaper, written between 2007 and 2015. each article is accompanied by a list of bullet point summaries that abstractively summarize the headline. 0 0.1 0.2 0.3 0.4 rnn model 1 model 2 model 3 model 4 model 5 model 6 r o u ge s co re rouge-1 rouge-l deep learning-based modified transformer model for automated news article summarization 275 table 6 comparison of rouge metrics of the proposed model with existing models model rouge-1 rouge-l pegasus-cnn_dailymail[2] 0.4186 0.2025 bart-large-cnn [2] 0.4270 0.2058 distilbart-cnn-12-6 [2] 0.4292 0.2077 proposed model 0.4297 0.2103 from table 6, the proposed model_6 has the highest scores on rouge-1 and rouge-l metrics, measuring the overlap between the generated and reference summaries. this means that the proposed model_6 is more effective and accurate than the other models in producing abstractive summaries. 5. conclusions the six proposed transformer-based models, each featuring varying numbers of encoders, decoders, and feed-forward network layers, reveal superior performance compared to the rnn model. the metrics such as training loss, training accuracy, and rouge scores are compared with the baseline rnn model. among these transformer models, results show that model_6 has the best performance with three encoder and decoder layers and four feed-forward network layers. model_6 has the lowest training loss, highest training accuracy, and highest rouge-1 and rouge-l scores. model_6 is compared with existing abstractive text summarization models such as pegasuscnn_dailymail, bart-large-cnn, and distil bart-cnn-12-6 on the cnn/dailymail dataset. the superiority of model_6 is analyzed by considering its simplicity, versatility, balance, and optimality. this unequivocally establishes model_6 as the most effective transformer model under consideration. these models can be applied to other natural language generation tasks, such as machine translation, paraphrasing, and question-andanswer generation. in future work, more advanced technologies and methods involving explainable ai to explore these tasks in generating summaries can be considered with user preferences. also, the proposed models can be applied to datasets in other languages. references [1] m. alfraheed, "an approach for features matching between bilateral images of stereo vision system applied for automated heterogeneous platoon", journal of theoretical & applied information technology, vol. 96, no.7, apr. 2018. [2] n. giarelis, m. charalampos, and k. nikos, "abstractive vs. extractive summarization: an experimental review", applied sciences, vol. 13, no. 13, jun 2023. [3] y. chen, m. yun, m. xudong, and l. qing, "multi-task learning for abstractive and extractive summarization", data science and engineering, vol. 4, pp. 14–23, mar 2019. [4] d. suleiman, and a. arafat, "deep learning based abstractive text summarization: approaches, datasets, evaluation measures, and challenges", mathematical problems in engineering, pp. 1–29, aug 2020. [5] r. s. shini, and k. vd. ambeth, "recurrent neural network based text summarization techniques by word sequence generation", in proceedings of the 6th international conference on inventive computation technologies (icict), jan. 2021, pp. 1224–1229. [6] w. fang, j. tianxiao, j. ke, z. feihong, d. yewen, and s. jack, "a method of automatic text summarization based on long short-term memory", international journal of computational science and engineering, vol. 22, no. 1, pp. 39–49, 2020. [7] t. goyal, j. l. junyi, and d. greg, "news summarization and evaluation in the era of gpt-3." arxiv preprint arxiv: 2209.12356, sep. 2022. 276 b. srinivas., b. lavanya., n. k. darimireddy, p. s. prasad et.al. [8] w. s. el-kassas, r. s. cherif, a. r. ahmed, and k. m. hoda, "automatic text summarization: a comprehensive survey", expert systems with applications, vol. 165, mar 2021. [9] k. ganesan, xz. cheng, and h. jiawei, "opinosis: a graph-based approach to abstractive summarization of highly redundant opinions." in proceedings of the 23rd international conference on computational linguistics (coling 2010), 2010, pp. 340-348. [10] p.-e. genest, and l. guy, "fully abstractive approach to guided summarization." in proceedings of the 50th annual meeting of the association for computational linguistics, 2012, vol. 2, pp. 354–358. [11] a. khan, s. naomie, f. haleem, k. murad, j. bilal, a. awais, a. imran, and p. anand, "abstractive text summarization based on improved semantic graph approach", international journal of parallel programming, vol. 46, pp. 992–1016, 2018. [12] t. shi, k. yaser, r. k. naren, and k. r. chandan, "neural abstractive text summarization with sequenceto-sequence models", acm transactions on data science, vol. 2, no. 1, pp. 1–37, 2021. [13] x. chen, g. shen, t. chongyang, s. yan, z. dongyan, and y. rui, "iterative document representation learning towards summarization with polishing." arxiv preprint arxiv: 1809.10324, 2018. [14] l. dong, y. nan, w. wenhui, w. furu, l. xiaodong, w. yu, g. jianfeng, z. ming, and h. hsiao-wuen, "unified language model pre-training for natural language understanding and generation", advances in neural information processing systems, vol. 32, 2019. [15] x. zhang, and l. mirella, "sentence simplification with deep reinforcement learning", arxiv preprint arxiv: 1703.10931, 2017. [16] j. lin, s. xu, m. shuming, and s. qi, "global encoding for abstractive summarization", arxiv preprint arxiv: 1805.0398, 2018. [17] r. pasunuru, and b. mohit, "multi-reward reinforced summarization with saliency and entailment", arxiv preprint arxiv: 1804.06451, 2018. [18] n. kalchbrenner, e. lasse, s. karen, van den o. aaron, g. alex, and k. koray, "neural machine translation in linear time", arxiv preprint arxiv: 1610.10099, 2016. [19] van den o. aaron, d. sander, z. heiga, s karen, v. oriol, g. alex, k. nal, s. andrew, and k. koray, "wavenet: a generative model for raw audio", arxiv preprint arxiv: 1609.03499, vol. 12, 2016. [20] a. vaswani, s. noam, p. niki, u. jakob, j. llion, n. g. aidan, k. łukasz, and p. illia, "attention is all you need", advances in neural information processing systems, vol. 30, 2017. [21] d. bahdanau, c. kyunghyun, and b. yoshua, "neural machine translation by jointly learning to align and translate", arxiv preprint arxiv: 1409.0473, 2014. [22] m. lewis, l. yinhan, g. naman, g. marjan, m. abdelrahman, l. omer, s. ves, and z. luke, "bart: denoising sequence-to-sequence pre-training for natural language generation, translation, and comprehension", arxiv preprint arxiv: 1910.13461, 2019. [23] https://www.kaggle.com/datasets/shashichander009/inshorts-news-data. [24] s. abbes, b. a. sarra, h. rim, and c. philippe, "automatic text summarization using transformers", in proceedings of the knowledge graphs and semantic web: third iberoamerican conference and second indo-american conference, november 2021, vol. 3, pp. 308–320. [25] s. gupta, and k. g. sanjai, "abstractive summarization: an overview of the state of the art", expert systems with applications, vol. 121, pp. 49–65, may 2019. [26] c.-y. lin, and f. j. och, "looking for a few good metrics: rouge and its evaluation", in ntcir workshop, 2004. [27] t. wolf, d. lysandre, s. victor, c. julien, d. clement, m. anthony, c. pierric et al, "hugging face's transformers: state-of-the-art natural language processing", arxiv preprint arxiv:1910.03771, 2019. [28] c. raffel, s. noam, r. adam, l. katherine, n. sharan, m. michael, z. yanqi, l. wei, and j. l. peter, "exploring the limits of transfer learning with a unified text-to-text transformer", journal of machine learning research, vol. 21, no. 140, pp. 1–67, 2020. [29] f. zhuang, q. zhiyuan, d. keyu, x. dongbo, z. yongchun, z. hengshu, x. hui, and h. qing, "a comprehensive survey on transfer learning", in proceedings of the ieee, 2020, vol. 109, no. 1, pp. 43–76. [30] b. srinivas, and s. r. gottapu, "segmentation of multi-modal mri brain tumor sub-regions using deep learning", journal of electrical engineering & technology, vol. 15, no. 4, pp.1899–1909, jul 2020. [31] m. allahyari, p. seyedamin, a. mehdi, s. saeid, d. t. elizabeth, b.g. juan, and k. krys, "text summarization techniques: a brief survey", arxiv preprint arxiv: 1707.02268, 2017. [32] c. khatri, s. gyanit, and p. nish, "abstractive and extractive text summarization using document context vector and recurrent neural networks", arxiv preprint arxiv: 1807.08000, 2018. [33] m. ranzato, c. sumit, a. michael, and z. wojciech, "sequence level training with recurrent neural networks", arxiv preprint arxiv: 1511.06732, 2015. [34] https://www.kaggle.com/datasets/gowrishankarp/newspaper-text-summarization-cnn-dailymail. [35] y. yu, s. xiaosheng, h. changhua, and z. jianxun, "a review of recurrent neural networks: lstm cells and network architectures", neural computation, vol. 31, no. 7, pp. 1235–1270, jul 2019. facta universitatis series: electronics and energetics vol. 32, no 1, march 2019, pp. 119-128 https://doi.org/10.2298/fuee1901119s design of efficient coplanar 1-bit comparator circuit in qca technology ahmadreza shiri, abdalhossein rezai, hamid mahmoodian acecr institute of higher education, isfahan branch, isfahan 84175-443, iran abstract. qca technology is an emerging and promising technology for implementation of digital circuits in nano-scale. the comparator circuits play an important role in digital circuits. in this work, a new and efficient coplanar 1-bit comparator circuit is proposed and evaluated in the qca technology. the designed coplanar 1-bit qca comparator circuit is constructed based on majority gate, xnor gate and inverter gate that are designed carefully. the functionality of the designed coplanar 1-bit qca comparator circuit is verified by using qcadesigner version 2.0.3. the obtained results indicate that the designed 1-bit qca comparator circuit requires 0.03 µm2 area and 38 qca cells. it also has 0.5 clock cycles delay. the comparison demonstrates that the designed qca comparator circuit provides improvements in comparison with other qca comparator circuits in terms of effective area, cell count, and delay as well as cost. key words: comparator, quantum-dot cellular automata, high-performance design, coplanar circuit 1. introduction two important issues in the vlsi design are scaling and reducing the computation time. the quantum-dot cellular automata (qca) technology is an emerging and promising technology to these issues at nano-scale [1]. the basic element in this technology is a square cell that has two free electrons in four dots [1-14]. the qca cell is a building block for constructing qca gates [1-14]. there are three basic gates in this technology: inverter gate, majority (m) gate, and xor gate [3-4]. these gates are building blocks for constructing the logic circuits such as qca multiplexers [5, 7], qca full address [1-3, 6, 8] and qca comparators [9-12, 15-18]. on the other hand, the comparator circuits play an important role in digital circuits such as micro controllers [6, 12, 15-18]. thus, the implementation of high-performance comparator circuits has a great deal of attention, and a lot of effort [10-12, 15-18] has been invested in performance improvement in the qca comparator circuits. das and de [10] have presented a 1-bit qca comparator that requires 0.343 µm 2 area and 319 qca received may 8, 2018; received in revised form september 14, 2018 corresponding author: abdalhossein rezai acecr institute of higher education, isfahan branch, isfahan 84175-443, iran (e-mail: rezaie@acecr.ac.ir) 120 a. shiri, a. rezai, h. mahmoodian cells. alshafi and bahar [11] have presented a 1-bit qca comparator, which requires 0.182 µm 2 area and 117 qca cells. shinha et al. [12] have proposed two qca comparator circuits that require 40 and 37 qca cells and 0.032 and 0.028 µm 2 area, respectively. ghosh et al. [16] have presented a 1-bit qca comparator circuit that requires 0.06 µm 2 area and 73 qca cells. akter et al. [17] have presented a 1-bit qca comparator circuit, which requires 0.11 µm 2 area and 87 qca cells. bhoi et al. [17] have presented a 1-bit qca comparator circuit that requires 0.23 µm 2 area and 220 qca cells. this study proposes an efficient coplanar 1-bit qca comparator circuit. the designed qca comparator is based on majority, xor and inverter gates. the accuracy of the designed circuit functionality is demonstrated by using qcadesigner version 2.0.3. the simulation results show that the designed coplanar 1-bit qca comparator circuit provides improvements compared with other 1-bit qca comparator circuits in terms of cell count, area, delay time and cost. the rest of this study is unified as follows: section 2 provides a review for qca technology. in section 3, the designed qca comparator circuit is presented. the results and comparison of the designed qca comparator circuit are provided in section 4. the conclusion is presented in section 5. 2. background 2.1. qca cell figure 1 shows the basic qca cell and its possible stats. we can consider each qca cell as a square including four quantum dots and a pair of electrons [1, 5]. electrons can be located at diagonally opposite locations due to the coulomb interaction between electrons in each cell. there are two different forms in each cell that their polarizations are specified as -1 and +1. these polarizations denote the binary values of 0 and 1, respectively [1, 5]. fig. 1. the possible stats for the qca cell [5] 2.2. qca gates there are three fundamental gates in this technology: inverter, majority, and xor gates, which are used to construct the circuits in this technology [11, 13, 19]. figure 2 shows these qca gates [3, 13]. design of efficient coplanar 1-bit comparator circuit in qca technology 121 (a) (b) (c) (d) (e) fig. 2 qca gates: (a) corner inverter, (b) robust inverter, (c) original majority gate (omg), (d) rotated majority gate (rmg), (e) xor gate [11, 3, 13, 19] in figure 2(a) and figure 2(b), the inverted polarization value of the input in each inverter is shown as the output. in figure 2 (c) and figure 2 (d), two kinds of qca threeinput majority gates are shown. figure 2 (e) shows three inputs qca xor gate [6, 13]. 122 a. shiri, a. rezai, h. mahmoodian 2.3. qca comparator comparator circuits play an important role in digital circuits [9-12, 15-18]. this circuit compares their two inputs. suppose a and b are two inputs of the comparator circuit, the outputs of this circuit are defined as follows [15]: output (ab) = a. ̅ where a>b for implementation of comparator circuit in the qca technology, equation (1) is reformulated as follows [15]: output (ab) = m (a, ̅, 0) where a>b 2.4. related works das and de [10] have developed a qca comparator circuit by combining the feynman and tr gates functional property, which is shown in figure 3. fig. 3. the utilized qca comparator circuit in [10] this qca comparator circuit requires 0.343 µm 2 area and 319 qca cells. al-shafi1 et al. [11] have developed a qca comparator circuit without wire-crossing, which is shown in figure 4. design of efficient coplanar 1-bit comparator circuit in qca technology 123 fig. 4. the utilized qca comparator circuit in [11] this qca comparator circuit requires 0.182 µm 2 area and 117 qca cells. shinha roy et al. [12] have developed a qca comparator circuit based on layerd-t or and and gates, which is shown in figure 5. fig. 5. the utilized qca comparator circuits in [12] this qca multilayer comparator circuit requires 0.03 µm 2 area and 37 qca cells. 124 a. shiri, a. rezai, h. mahmoodian ghosh et al. [16] have developed a qca comparator circuit, which is shown in figure 6. fig. 6. the utilized qca comparator circuit in [16] this qca comparator circuit requires 0.06 µm 2 area and 73 qca cells. bhoi et al. [17] have developed a qca comparator circuit, which is shown in figure 7. fig. 7. the utilized qca comparator circuit in [17] this qca comparator circuit requires 0.23 µm 2 area and 220 qca cells. design of efficient coplanar 1-bit comparator circuit in qca technology 125 akter et al. [18] have developed a qca comparator circuit based on tr and feynman gates, which is shown in figure 8. fig. 8. the utilized qca comparator circuit in [18] this qca comparator requires 0.11µm 2 area and 87 qca cells. although, these qca comparator circuits are suitable, the performance of the comparator can be improved as will be described in the next section. 3. the proposed qca comparator circuit the proposed qca comparator circuit has two 1-bit inputs and three 1-bit outputs. the inputs are indicated by a and b, and the outputs are indicated by l(a, b), e(a, b), and g(a, b). the relation between outputs and inputs are defined as follows: l(a, b)= ̅.b where ab as it is shown in equation (3), if the input a is less than the input b, the output l(a, b) is “1” and other outputs are “0”. moreover, if the input a is greater than the input b, the output g(a, b) is “1” and other outputs are “0”. otherwise, the inputs a and b are equal, the output e(a, b) is “1” and other outputs are “0”. figure 9 shows the designed 1-bit qca comparator circuit. (a) (b) fig. 9. the designed 1-bit qca comparator circuit (a) block diagram (b) layout 126 a. shiri, a. rezai, h. mahmoodian the designed 1-bit comparators consist of 2 original majority gates (fig.2 (c)), 3 inverter gates (fig. 2 (a)) and an xor gate (fig. 2 (e)). the majority gates in the developed 1-bit qca comparator circuit are used for implementation of and gates. as a result, one input of these majority gates is set as logic "0". the designed 1-bit qca comparator circuit requires 38 qca cells. 4. simulation results and comparison the designed 1-bit qca comparator circuit is simulated by using qcadesigner tool version 2.0.3. the following parameters are used for simulation: the number of samples: 12800, radius of effect [nm]:65.000000, the convergence tolerance: 0.00100, relative permittivity: 12.900000, clock low [j]: 3.800000e-023, clock high [j]: 9.800000e-022, clock shift: 0.000000e+000, and clock amplitude factor: 2.000000. other simulation parameters are chosen as default. figure 10 shows the simulation results of the designed 1-bit comparator circuit. fig. 10. the results for the designed 1-bit comparator circuit these results demonstrate that the outputs of the designed 1-bit comparator circuit are correctly obtained after 0.5 clock cycles delay. moreover, the designed 1-bit qca comparator circuit requires 0.03 µm 2 area and 38 qca cells. table 1 summarizes the simulation results of the designed 1-bit comparator circuit compared with other 1-bit comparator circuits in [10-12, 16-18]. table 1 the comparison table for 1-bit qca comparator circuit reference cell count area (μm2) time delay (clock cycle) crossover cost [10] 319 0.343 3 multilayer 1.029 [11] 117 0.182 1 coplanar 0.182 [12] design1 40 0.032 1 multilayer 0.032 [12] design2 37 0.028 1 multilayer 0.028 [16] 73 0.06 1 coplanar 0.060 [18] 87 0.11 0.50 coplanar 0.055 [17] 220 0.23 0.75 coplanar 0.172 this paper 38 0.030 0.50 coplanar 0.015 design of efficient coplanar 1-bit comparator circuit in qca technology 127 in this table, area and delay are shown in terms of µm 2 and clock cycle, respectively. moreover, following equation is used to determine the cost value based on [1, 5, 7]. cost= area × delay (4) as it is shown in table 1, the designed 1-bit comparator circuit has advantages in terms of cost and area compared to [10-12, 1618]. for example, the cell count, area, delay and cost in the designed 1-bit qca comparator circuit are improved compared to 1bit qca comparator circuits in [10] by about 88%, 91%, 83% and 98%, respectively. the only 1-bit qca comparator circuit, which requires a slightly lower cell count and area than the designed qca comparator circuit is the 1-bit qca comparator circuit in [12] (design 2). however, this advantage has been resulted from the increased number of layers, not from logic design. in addition, the delay time and cost in the proposed 1-bit qca comparator circuit are reduced by about 50% and 40% compared to the 1-bit qca comparator circuit in [12] (design 2). 5. conclusions qca technology is a promising technology for implementation of digital circuits in nano-scale [1-6]. the comparator circuits play important role in digital circuits [9-12, 1618]. in this study, an efficient 1-bit qca comparator circuit was proposed and evaluated. the designed 1-bit qca comparator circuit was constructed based on majority gate, xnor gate and inverter gate that were designed carefully. the functionality of the designed 1-bit comparator circuit was verified by using qcadesigner version 2.0.3. the obtained results indicate that the designed 1-bit comparator circuit requires 0.03 µm 2 area and 38 qca cells. it also has 0.5 clock cycle delay. the results showed that the designed 1-bit comparator circuit provided improvements compared with other 1-bit comparator circuits in [10-12, 16-18] in terms of cell count, effective area, and delay as well as cost. references [1] h. rashidi, a. rezai, “high-performance full adder architecture in quantum-dot cellular automata,”j. eng., vol. 2017, pp. 394–402, 2017. [2] d. mokhtari, a. rezai, h. rashidi, f. rabiei, s. emadi, a. karimi, “ design of novel efficient full adder circuit for quantum-dot cellular automata technology, ” facta univ. series: electr. energy, vol. 31, no. 2, pp. 279-285, 2018. [3] i. edrisi arani, a. rezai, “novel circuit design of serial-parallel multiplier in quantum-dot cellular automata technology”, j. comput. electr., 2018. [4] m. niknejad divshali, a. rezai, a. karimi, “towards multilayer qca siso shift register based on efficient d-ff circuits”, int. j. theor. phys., 2018. [5] h. rashidi, a. rezai, “design of novel efficient multiplexer architecture for quantum-dot cellular automata,” j. nano electr. phys., vol. 9, no. 1, pp. 1-7, 2017. [6] m. balali, a. rezai, h. balali, f. rabiei, s. emadid, “towards coplanar quantum-dot cellular automata adders based on efficient three-input xor gate,” result phys., vol. 7, pp. 1389-1395, 2017. [7] h. rashidi, a. rezai, s. soltani, “high-performance multiplexer architecture for quantum-dot cellular automata” j. comput. electr., vol. 15, pp. 968-981, 2016. [8] m. balali, a. rezai, “design of low-complexity and high-speed coplanar four-bit ripple carry adder in qca technology,” int. j. theor. phys., pp. 1-13, 2018. [9] d. bahrepour, “a novel full comparator design based on quantum-dot cellular automata,” int. j. inf. electr. eng., vol. 15, pp. 406-410, 2015. 128 a. shiri, a. rezai, h. mahmoodian [10] j c. das, d. de, “reversible comparator design using quantum dot cellular automata,” iete j. res., vol. 62, pp. 323-330, 2016. [11] m d. abdullah-al-shafi, a n. bahar, “optimized design and performance analysis of novel comparator and full adder in nanoscale,” cogent eng., vol. 3, 2016. [12] s. sinha roy, c. mukherjee, s. panda, a. k. muchopadhyay, b. maji, “layered t comparator design using quantum-dot cellular automata,” ieee conf. dev. integ. circ. (devic), pp. 90-94, 2017. [13] a. n. bahar, s. waheed,”a novel 3-input xor function implementation in quantum dot-cellular automata with energy dissipation analysis,” alexandria eng. j., in press, 2018. [14] j. c. das, d. de, “novel low power reversible binary incrementer design using quantum-dot cellular automata,” microprocess microsyst., vol. 42, pp. 10-23, 2016. [15] a. sarker, md. badrul alam miah, “design of 1-bit comparator using 2 dot 1 electron quantum-dot cellular automata,” int. j. adv. comput. sci. appl., vol. 8, no. 3, pp. 481-485, 2017. [16] b. ghosh, sh. gupta, s kumari, “quantum dot cellular automata magnitude comparators,” ieee int. conf. electr. dev. solid state circ. (edssc), pp. 1-2, 2012. [17] b. k. bhoi, n. k. misra, m. pradhan, “a universal reversible gate architecture for designing n-bit comparator structure in quantum-dot cellular automata,” int. j. grid distr. comput., vol. 10, no. 9, pp. 33-46, 2017. [18] r. akter, n islam, s waheed, “implementation of reversible logic gate in quantum dot cellular automata,” int. j. comput. appl., vol. 109, pp. 41-44, 2017. [19] m. balali, a. rezai, h. balali, f. rabiei, s. emadid, “a novel design of 5-input majority gate in quantum-dot cellular automata technology,” ieee symp. comput. appl. indust. electr. (iscaie), pp. 1316, 2017. instruction facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 205 218 doi: 10.2298/fuee1602205p a secure e-voting for the student parliament  dragoljub pilipovic 1 , djordje babic 2 1 slobomir p university, bijeljina, bosnia and herzegovina 2 school of computing, union university, belgrade, serbia abstract. e-voting is a service or system which serves to get individual human inputs and to summarize them to a certain group decision. usually, e-voting is a take for egovernment part, but in this paper we consider e-voting for particular and specific population. the proposed e-voting system is intended for student population and student parliament election. in this paper, we describe concept of p.u.t. (personal unique token) and ways to distribute p.u.t.s to students. at the end, we present a software designed for the student parliament use case. key words: e-voting, evs (electronic voting system), p.u.t., randomizer, secure distribution, student parliament, uml (unified modeling language). 1. introduction in today‟s society, digital services have become an important part in everyone‟s lives. electronic voting is deployed in many countries worldwide [1] [2]. every year in the last two decades, the number of theoretical and practical solutions and research papers in this field is increasing. we have noticed the existence of more than two hundred papers from the year 2000 onwards. however, there is a scientific paper, which is considered as the pioneer in this area: it is an overview of mix-net scheme for e-voting by david chaum [3]. the main focus in the e-voting field is most often on technical dimensions: cryptographic algorithms, e-voting protocols and scheme, trusted hardware, software implementation, security, etc. recently, the focus has moved to the organizational, social, and political aspects of e-voting. despite of a large amount of research in e-voting field, e-voting has no big real-world success. direct recording electronic (dre) machines for e-voting have been criticized many times [4-6]. the us department of defense proposed a remote and internet based voting system for elections: secure electronic registration and voting experiment (serve), but in report [7] there are strong recommendations against deploying this e-voting system. e-voting schemes are the core of e-voting protocols and e-voting systems. we will mention three most often represented in the literature. received january 29, 2015; received in revised form november 1, 2015 corresponding author: dragoljub pilipovic slobomir p university, bijeljina, pf 70 pavlovića put 76, 76300 slobomir, bosnia and herzegovina (e-mail: dragoljub.pilipovic@gmail.com) 206 d. pilipovic, d. babic mix networks (mix-nets) are a cryptographic primitive generally used to obfuscate a path through a network [3]. mix-nets usually consist of a set of servers, named mixes, which ensure that the output of a mix-net cannot be correlated with its input. in e-voting, mixnets simulate an anonymous channel between a voter and ballot box [8-10]. the second evoting scheme mentioned here is the one based on blind signature primitive. in this primitive, messages are signed by a signer, but the message content is kept hidden from the signer. in e-voting, a voter sends encrypted and blinded ballot to the ballot box. after validating the ballot, the voter unblinds the ballot and, therefore, gets a validated ballot which cannot any longer be linked to the original content of it [11-12]. the last e-voting schemes are homomorphic encryption schemes. the scheme is based on the algebraic homomorphic properties of few public-key cryptosystems which permit tallying of an election without the decryption of any single vote [13-14]. in addition to the three aforementioned schemes, there is certainly an interesting paper-based scheme prêt à voter. here, a voter retains a part of the ballot as their encrypted receipt [15]. technological measures like e-voting approach may increase voter turnout, but some researchers found that e-voting gets the turnout to the initial level at a later stage [16]. electronic voting system (evs) described in this paper is specific because it is designed for the student population, consisting mostly of young people, who are characterized by a particular state of mind and practical attitude. they are open-minded, mobile, independent, not included in politics (at least this is valid for majority). they use all the latest technological advances, thus all devices used in e-voting are familiar to them. however, students are apolitical in the sense that they have low voting turnout [17-19]. a problem of distrust in voting can be significantly reduced; perhaps they can even disappear, if e-elections are conducted with educated voters, in addition to the increased simplicity of e-voting. the system proposed in this paper is intended only for student population. the students‟ „job‟ is exactly composed of adoption (and construction) of something new. we believe that students of computer science will have no obstacles to understand and adopt this way of voting. furthermore, we hope that one day the whole population will have such an attitude. the evs for student parliament has to be safe like others evss, but it does not need to have an extremely high level of safety features, as it affects a smaller part of the society. in addition, due to the characteristics of the student population, especially with their open mind and independence, we assume that it will be unusual for students to sell their e-vote to the other. the presented evs will prevent misuses, for example the coercion to vote for someone else will be responded by appropriate mechanisms proposed in our evs. the main contribution of our paper is a concept of voting vectors, called p.u.t., which consists of readable string of numbers and characters. printed p.u.t. list is anonymous as long as the voter keeps it in a secret and secure place. in addition, we show design and implementation of electronic voting system (evs) based on p.u.t. concept. the evs provides a very high usability because of its simplicity. the system requires only limited capabilities on the side of the voter: ordinary computer and practically any web browser. the paper is organized as follows. in the second section, we present the concept of p.u.t. vectors for e-voting. the third section explains two ways to secure the distribution of the generated vectors for e-voting. in the next section, the entire protocol i.e. system for e-voting in student elections, is described. finally, at the end, we show the design and layout of software for e-voting based on the principles given in the previous sections. a secure e-voting for the student parliament 207 2. p.u.t. concept the most important issue in voting is voter identity problem. here, this problem is solved by using a method called personal unique tokens (we use abbreviation p.u.t. from this point further). in the classical, paper based model of e-voting, the voter identity and his/her choice are sent separately to the information system for e-voting. the voters‟ identities are sent most often through a digital signature, and the voters‟ choice has to use a secure connection to the database. the main idea of the p.u.t. concept is that we merge into one entity these two things which are separated physically and in-time, although one follows immediately after the other. this entity is sent to the information system of e-voting. in this way, p.u.t. represents identity of the voter and his choice at the same time (fig. 1). fig. 1 personal unique tokens data sent as a vote of specific user is given as a unique answer (a vector), which is related to the uniqueness of each voter for each option he can vote. p.u.t. is formed in such way that it is easy to read it and easy to enter it to the computer. in table 1, an example of p.u.t. list for a specific voter is shown. each row in table 1 represents p.u.t data that should be sent to evs for a specific voting option. in this case, the voting option is represented by name and surname of an election candidate. one voter has only one p.u.t. list for specific election race. table 1 example of the p.u.t. list for e-voting option p.u.t. – first voter ... p.u.t. – last voter slobodan milutinović abc 123 cba ghw 111 kkk milan milošević fgh 907 uso jap 231 gap boris nikolić uuu 000 iii hag 790 grw tomislav tadić eae 888 nhf iae 834 yiy here, we propose the following format aaa xxx aaa for generating p.u.t.s, where a is a letter of the latin alphabet (such alphabet exists on every keyboard, every operating system, every type of device and at least everyone knows latin letters) and x is a decimal digit. in order to calculate the number of available p.u.t.s, for each group of three positions we use a formula to calculate the variations of k elements over a set of n elements with repetition: ( , ) kv n k n (1) after that, we multiply the resulting numbers to each other: 3 3 326 10 26 = 17.576 1.000 17.576    (2) 1: 2: 1: identity choise p.u.t. e.v.s. e.v.s. 208 d. pilipovic, d. babic in this way, we calculate the number of available personal unique answers, which is equal to 308.915.776.000 (a little over 300 billion). this number should satisfy any existing elections for the student parliament. the alternative is to additionally use lower-case letters of the latin alphabet, but reducing the number of the text position at the same time. in this way, there are two groups of two letters instead two groups of three letters (current aa xxx aa). this case sensitive alternative offers 7.311.616.00 unique p.u.t. values. 2 3 2(26 26) 10 (26 26) = 2.704 1.000 2.704      (3) the next alternative is to use alphabet with a huge number of different letters. it is believed that a chinese must know 4.000 characters for conventional literacy [20]. if the positions of the characters from chinese alphabet are still reduced over to the 1 + 1 position, we will get 16.000.000.000 variations of p.u.t. values. the current format looks like a xxx a. 1 3 14.000 10 4.000 = 4.000 1.000 4.000    (4) 3. distribution оf answers distribution of potential e-votes in the form of p.u.t. list to the student voters is a critical and very sensitive step. the reason is that the p.u.t. list contains the identity of the voter and the virtual ballots, and therefore should be protected from misuse. in fact, this list must be kept in the strictest confidentiality. only a voter can have an insight into the content. there are two possibilities that meet this requirement: paper option and software option. in both distribution options, it is necessary that the voter himself (i.e. a student in our case) appears at the site of student election organizers. the paper option is triggered when the operator chooses this option by pressing the corresponding button in the election software (details of election software are provided in the following sections). the p.u.t. list is printed for a present student, whose identity has previously been established. the default printer prints without a preview. the printer is designed in such a way that the text is printed at the bottom of the paper, and therefore printed text is invisible to the operator or anyone else. in addition, the operator can not see p.u.t. list on the screen because this option is not implemented in election software. the sealed envelope with the printed values is given to the voter after loading the paper in an opaque envelope without turning the printed page (envelope and paper are of the same size), or the paper is folded without turning on the printed page and then it is put in an usual size envelope. the voters, who watch out for irregularities in the operator‟s work, monitor the registration process all the time. the software option of p.u.t. distribution encrypts the list with a strong symmetric algorithm. evs generates the windows executable file which is transferred to the voter‟s usb flash drive, or possibly to optical media (for example cd or/and dvd), and then handed to the voter. when executed, this applet has only one text box for entering password that unlocks and displays the bitmap image with p.u.t. list. the design and features of this applet are similar to the digital wallet. for more portability, java applets can be generated with a similar purpose, or even native applications for all popular operating systems (windows, linux, mac os x, android, ios). a secure e-voting for the student parliament 209 4. architecture аnd protocol the protocol of the proposed evs has three phases. each phase consists of several actions. in a sequel, we give description of these three phases and corresponding actions fig. 2). a. phase i. the phase i is pre-election phase, which comprises all the necessary preparatory work for the second phase. it consists of the following two actions: 1. evs initialization consists of: launching software for e-voting in the appropriate mode; allocation of responsibilities/duties to administrators, as well as the establishing list of students eligible to vote, which is obtained externally or the list is made in this sub-phase. 2. voter registration of students who want to vote through the e-voting system, which must be done personally (face to face) when a voter gets the p.u.t. list. the voters will subsequently receive additional instructions that enable successful e-voting, e.g. address for voting, authentication data, etc. b. phase ii. this is voting phase, in which voters make selection electronically, and it consists of the following sub-phases: 1. voter authentication confirms that the person is exactly a voter eligible to vote, i.e. he/she is on the list for e-elections. the voters use the instructions and data obtained in the sub-phase i-2. 2. ballot is available to voters. it should be blank and anonymous. 3. act of voting in which the voter fills ballot and submits it to the evs. fig. 2 phases in proposed evs c. phase iii. this is election phase in which are all those activities that take place after the closing moment of elections occur. 1. vote counting consists of a ballot collection (e.g. from individual polling stations, the ballots are forwarded to the central location), preparation for processing (e.g. if ballots come encrypted, then their decryption starts), and finally there is counting of evotes according to the rules defined in the sub-phase i-1 in order to obtain accurate results. the results can be made public, for example through the news channel on the official website of election commission. phase i phase iii phase ii initialization registration authentication ballot voting counting integration, evaluation and revision 210 d. pilipovic, d. babic 2. integration, evaluation and revision. if e-voting is only part of the overall election, then voting results will be summed up in order to obtain the final results. evaluation assesses the process of e-voting, and then generates statistics that will help to improve the whole process and make it more transparent. revisions are performed if there is suspicion about the results or the implementation of e-voting procedures, but most often it comes down to a recount of e-votes. [21] architecture and protocol for e-voting proposed here, are intended for imaginary elections for a student parliament. its properties should be easily scaled to the general purpose elections. it is assumed that there is a database with several thousand students – eligible voters. next assumption is that there will also be candidates, a few dozen, for example. the entire process of e-voting is divided into three stages, which are not time-overlapping. these stages are registration process, voting day and post-election period. in the first stage, students are registered for e-voting with identification documents like id card or student card. registered students are recorded in the database and at that point, they receive their p.u.t. lists. p.u.t.s are unique, randomly generated series of decimal digits and latin alphabet letters, as explained above. each personal token is located at the intersection of voters‟ row and candidates‟ column of p.u.t.s matrix. the p.u.t list is given to student voter using one of the two options described in the previous section. voting day is realized for students to vote on the web site with the corresponding simple form which any web browser is able to read and render because it consists mainly of basic html elements. web site for the elections represents the equivalent of polling stations. the main e-voting page is removed from the web server after the voting closes. 5. unlinkability, anonymity аnd verifiability in the proposed evs, there are two databases. the first database (db) is completely offline (e.g. separated from the internet) and the second db is used just for e-voting on the internet. the second db contains anonymous p.u.t. lists and the results of voting, while the first db contains everything else. the second db is made from the first db (see details in the next section). the database on the web server (the second one), which is used to check whether a certain p.u.t. value is valid or not, does not contain personal data of students, but only a list of p.u.t. values and their associated candidate. the following is a description of the properties of the proposed evs (graphically depicted on fig. 3). unlinkability: since p.u.t.s are independent from personal data of voters, because they are not derived from them, but they are uniformly distributed in the domain of values, there is no direct link between voters and e-votes. anonymity: if p.u.t. list is kept as top secret, then the voter and his e-vote will be anonymous. verifiability: upon closing e-voting, all valid p.u.t.s are gathered from second db and published on the website of the election commission. at this point all students can check whether their e-votes are recorded. whole p.u.t. list is also published on the web site, thus anyone can verify whether the final results are correct because each p.u.t. value can be connected to an election candidate. a secure e-voting for the student parliament 211 student : voter f ir s t d .b . s e c o n d d .b . voting server site with results 1: p.u.t. list 3: p.u.t. 4: p.u.t. 2: anonymized p.u.t.s 5: anonymized p.u.t.s 6: voted p.u.t.s offline online 7: p.u.t. anonymity unlinkability verifiability fig. 3 the flow of p.u.t.s, p.u.t. lists, voted p.u.t.s and anonimized p.u.t.s 6. design аnd implementation оf evs all previous sections can be seen as a programming task, or user requirements for the process of developing software. for the software development, we use well known and common larman method [22]. here, we show only the most significant parts of the project documentation. figure 4 provides a global use case diagram divided by domain areas. it can be seen that there are two actors: an operator (synonym to a voting official), and a student (synonym to an eligible voter). in total, there are sixteen use cases (not shown here) in four domain areas. based on these use cases, we design evs software. operator student student's databallot's data e-voting p.u.t.'s data fig. 4 global use case diagram 212 d. pilipovic, d. babic the following three figures shows the gui (graphical user interface) of the proposed evs software. the software is developed in visual studio ide, the c# programming language, and ado.net and asp.net technologies. figure 5 shows the server part of the software that is targeted for windows 8 implemention platform, and the remaining figures 6-8 show the client part. at student‟s data tab are implemented operations to work with eligible voters students with voting rights. the students can be added, modified or deleted, and the data about them can be imported from .xml file with the appropriate scheme. this is designed and implemented based on student‟s data use cases. at ballot‟s data tab are placed the maintenance of elections data for the student parliament and in particular setting the options to vote (e.g. candidates) for the virtual ballot. this is based on ballot‟s data use cases. at p.u.t.s data tab are implemented the features for p.u.t. generation, printing and creating digital wallet application within p.u.t. list. there is an issue (we call it „randomizer efficiency problem‟) that is reflected in the slow rate of generating p.u.t. values, which requires further optimization. algorithm 1 pseudo-code for generation of p.u.t. list for every eligible voters 1: main_program(); 2: initialize put_list as matrix[maxvoters,maxvoteoptions]; 3: put_list(1,1)=generate_candidate_for_put(); 4: for i:=1 to (maxvoters*maxvoteoptions) do 5: found:=true; 6: while found do 7: temp:=generate_candidate_for_put(); 8: for j:=1 to i-1 do 9: y:=j-(round(j/maxvoters)-1)*maxvoters; 10: if put_list(x:=round(j/maxvoters),y)==temp then 11: found:=false; 12: break; 13: end if 14: end for 15: end while 16: y:=i-(round(i/maxvoters)-1)*maxvoters; 17: if found then put_list(x:=round(i/maxvoters),y):=temp else i--; 18: end for 19: generate_candidate_for_put(); 20: initialize candidate as array[9]; 21: for i:=1 to 6 do 22: temp:=rand_between('a','z'); 23: if i<3 then place:=i else place:=i+6; 24: candidate[place]:=temp; 25: end for 26: for i:=1 to 3 do 27: temp:=rand_between('0','9'); 28: candidate[i+3]:=temp; 29: end for 30: return candidate; 31: round(x); 32: if integer(x)==x then y:=x else y:=integer(x)+1; 33: return y; a secure e-voting for the student parliament 213 figure 5 displays a part of the evs software that is used to adjust settings of the evoting. the check box ‟use captcha check‟ is used to determine whether or not the voter is human (captcha completely automated public turing test to tell computers and humans apart). the check box ‟use web forum‟ determines whether the output of e-voting goes to public web site. the text box ‟minimal duration of e-voting‟ determines shortest time in seconds to finish cast an e-vote. fig. 5 gui for some e-voting use cases figures 6 and 7 show two different client parts of the proposed evs software, which are designed and implemented by two use cases of e-voting domain area. figure 6 displays the client part of evs in ubuntu linux on the web browser opera. it is a virtual polling place and a virtual ballot. a voter fills in the first row of text boxes form with his/her own p.u.t. list, and then types captcha series, in the second row. when the timer ends up, a student can press vote button, and send completed virtual ballot to the server. figure 7 depicts applet with p.u.t. list. this is partly covered by e-voting use cases. physically, the applet consists of three parts. the first part of the applet is executable file (extension is .exe), which is always the same for all voters. at the top of the applet, there is a password field (in fact it is a decryption key), besides that there is a view button and below there is a decrypted image with p.u.t. values. the second part of the applet is a readme.txt file with instructions for using the applet. the third part, the most important component of the applet, is picture.jpg. this file represents the bitmap image with high compression rate, which is encrypted with aes algorithm. encryption key length is 128 bits (16 bytes in the form of password). the symmetric algorithm aes is selected because there is a good support for it in the windows operating system with .net framework 3.5 with whom whole software ecosystem is built. 214 d. pilipovic, d. babic fig. 7 applet digiwallforevs with decrypted p.u.t.s fig. 6 virtual ballot in the client part of evs all three components are packed in .zip archive with the „extract-to-folderpseudorandom_number‟ name. here, the last number is obtained from the sequence whose pseudorandom generator seed is set at the start of the evs software. the image with p.u.t.s is rendered with random font, size, color and style in order to decrease possibility of success of fig. 8 sequence diagram for phase ii of proposed evs a secure e-voting for the student parliament 215 the ocr (optical character recognition) process. the password for decryption is not stored anywhere. however, only the voter knows the password because the voter is a legitimate user. in order to improve protection of program code by adding prevention for readability free obfuscator software obfuscar is used. a sequence diagram in figure 8 shows objects in the proposed evs and their interactions in the sequential order that the interactions occur. the sequence diagram is a form of interaction diagram in uml and it models the collaboration of objects based on a time sequence. databases are stored in rdbs sql server. figures 9 and 10 display schemes of both relational databases. fig. 9 relational scheme for offline db fig. 10 relational scheme for online db in order to better perceive components and layout of hardware and software of our evs, figure 11 shows the uml deployment diagram. 216 d. pilipovic, d. babic client (https html) dbms (sql server 2008) web server (internet information services) * * «execute» «execute» firewall * * * * {windows 32-bits application (.net 3.5, c#)} {asp.net virtual ballot} fig. 11 deployment diagram of evs components 7. discussion and conclusion in june 2015, we conducted a pilot e-voting with software presented in the article. the aims were to obtain practical experience in conducting process of e-voting and to collect feedback from the participants. the pilot was locally coordinated by the pilot election team. there were two separated e-voting groups. first of them consisted of second year students and second group were fourth year students. both groups belonged to department of information technology, the total of 47 students. students from the first group voted for types of project in database course they needed to finish as a pre-exam engagement, while students from the second group voted for a leader of software project they needed to make. first group‟s voting imitated elections with political parties and/or political options, while the other one resembled voting for candidates in the elections. after the election period, we organized mini surveys among e-voting participants. the survey had five questions: one yes/no type, one question with open answers and the rest of them were with likert type with 1-6 scale. students‟ evaluation was generally positive to evoting and the evs. nevertheless, usability of the evs was rated at the middle of scale. the reason for this can be seen from the answers to the open-type question. students were asked for mobile application for e-voting, particularly application for android operating system. prêt à voter was used in student elections in both luxembourg and surrey [23] (the evs is mentioned in introduction). in [24] is documented use of punchscan in the 2007 student elections at the university of ottawa. punchscan is paper-based evs with opticalscan counting of votes. bingo voting was applied in the election of the student parliament in karlsruhe institute of technology in 2008 [25]. security of the evs relies on trusted random number generating devices like bingo machines. it has property of e2e (end-2end) verifiability. a secure e-voting for the student parliament 217 these evs, used in academic and student environment, are not considered comparable to our evs, since they have not fully eliminated the need for paper. therefore, for the sake of comparison, we use evs described in [26]. it is based on personal smart cards with digital signatures protocol and mixing of votes. it is more technically complex than our evs, since it requires an additional device, i.e. a smart card reader. our system does not seek personal smart card as a prerequisite, which is still not widespread. otherwise, any general election evss or e-voting schemes can be used for the purposes of academic and student voting, e.g. most frequently mentioned schemes from the introduction. still, it is not happening because it would be irrational and the waste of resources. our evs has a relatively simple structure and organization, which leads to overall practicality of implementation. beside its simplicity, the evs has three important properties that make it suitable for the intended purpose. these are properties of unlinkability, anonymity and verifiability. the proposed evs can be applied with additional effort at general-purpose elections. in addition, with some minor changes or even in identical form given here, it might be applied to any kind of e-voting, such as corporate voting, syndicate voting, etc. however, the e-voting pilot showed that the usability of e-voting software must be improved. web site for e-voting must have a professional appearance. next, trusted mobile applications for e-voting should be developed, which will be a sort of gateway or shortcut for an e-voting web site. security can be improved easily and significantly with qualified digital certificate at e-voting server for to give the https connection. for the application in the general-purpose elections, it is necessary to analyze the evs with appropriate methodology or protection profiles. currently, there are three protection profiles for evs: bsi-pp-0031 in germany, pp-civis in france, and ieee p1583 in usa [27]. further analysis could be modeling of potential threats based on the components in a scheme, in conjunction with attack trees offering possible ways to handle such threats and/or errors [28]. another option is using applied π-calculus to symbolically describe the system and their operations and attributes [29]. finally, the pilot project should be implemented on a large electorate in order to identified errors and received feedback from a larger number of participants. references [1] project world map of e-voting.cc gmbh, [online]. available at: http://www.e-voting.cc/en/itelections/world-map/ (current 2015). [2] d. pilipović, “razvoj, trenutno stanje i perspektive e-glasanja“ (in serbian), in proc. infoteh ‟14, jahorina, pp. 1225-1228, 2014. [3] d. chaum, “untraceable electronic mail, return addresses, and digital pseudonyms”, communications of the acm, vol 24, no 2, pp. 84-90, 1981. [4] t. kohno, a. stubblefield, a. rubin, and d. wallach, “analysis of an electronic voting system”, in proc. of ieee symposium on security and privacy, pp. 27–40, 2004. [5] electronic voting machine information sheet, sequoia voting systems avc edge, version 1.1., eff (electronic frontier foundation), 2006. [6] j. bannet, d. w. price, a. rudys, j. singer, and d. s. wallach, “hack-a-vote: security issues with electronic voting systems”, ieee security and privacy, vol. 2, no. 1), pp. 32–7, 2004. [7] d. jefferson, a. d. rubin, b. simons, and d. wagner, “a security analysis of the secure electronic registration and voting experiment (serve)”, 2004, [online]. available at: http://www.servesecurityreport. org (current january 2004). 218 d. pilipovic, d. babic [8] c. a. neff, “a verifiable secret shuffle and its application to e-voting”, acm conference on computer and communications security, pp. 116–125, 2001. [9] m. jakobsson, a. juels, and r. l. rivest, “making mix nets robust for electronic voting by randomised partial checking”, in proc. of the 11th usenix security symposium, berkeley, pp. 339– 53, 2002. [10] d. wikström, “a sender verifiable mix-net and a new proof of a shuffle”, in proc. of the advances in cryptology asiacrypt 2005, pp. 273–92, 2005. [11] g. dini, “a secure and available electronic voting service for a large-scale distributed system”, future generation computer systems, vol. 19, no. 1 , pp. 69-85, 2003. [12] yu-yi chen, jinn-ke jan, and chin-ling chen, “the design of a secure anonymous internet voting system”, computers & security, vol. 23, no. 4, pp. 330-337, 2004. [13] r. cramer, r. gennaro, and b. schoenmakers, “a secure and optimally efficient multi-authority election scheme”, european transactions on telecommunications 8, pp. 481–490, 1997. [14] m. hirt and k. sako, “efficient receipt-free voting based on homomorphic encryption”, in proc. of the advances in cryptology eurocrypt 2000, bruges belgium, pp. 539–56, 2000. [15] p. ryan, “a variant of the chaum voter-verifiable scheme”, in proceedings of the workshop on issues in the theory of security, wits ‟05, new york, pp. 81–88, 2005. [16] v. d. besselaar, et. al. “experiments with e-voting technology: experiences and lessons”, building the knowledge economy: issues, applications, case studies, ios press, 2003. [17] e. dahlstrom, j. d. walker, and c. dziuban, “ecar study of undergraduate students and information technology”, boulder, co: educause center for applied research, 2012. [18] m. r. jeffreys, nursing student retention: understanding the process and making a difference, springer publishing company, 2012. [19] t. nyundu, k. naidoo, and t. chagonda, “getting involved on campus: student identities, student politics, and perceptions of the student representative council (src)”, jssa vol 6, pp. 149-161, 2015 [20] j. norman, chinese, cambridge university press. 1988, p. 73. [21] d. pilipović, “međunarodni standardi i preporuke kod elektronskog glasanja” (in serbian), infoteh 14, jahorina, pp. 1233-1236, 2014. [22] c. larman, “applying uml and patterns: an introduction to object-oriented analysis and design and iterative development”, prentice hall ptr, 2004 [23] c. z. acemyan , p. kortum , m. d. byrne, and d. s. wallach, usability of voter verifiable, end-to-end voting systems: baseline data for helios, prêt à voter, and scantegrity ii, usenix journal of election technology and systems (jets), vol. 2, no. 3, july 2014. [24] a. essex, j. clark, r. t. carback, and s. popoveniuc, "punchscan in practice: an e2e election case study", in proc. 2007 iavoss workshop on trustworthy elections (wote), ottawa, canada, 2007. [25] m. bär, c. henrich, j. müller-quade, s. röhrich, and c. stüber, real world experiences with bingo voting and a comparison of usability, workshop on trustworthy elections, wote 2008, 2008. [26] r. krimmer, a. ehringfeld, m. traxl, the use of e-voting in the austrian federation of students elections 2009., in proc. of the 4th international conference evote 2010, 2010. [27] k. lee, y. lee, d. won, and s. kim, protection profile for secure e-voting systems, ispec 2010, lncs 6047, pp. 386–397, 2010. [28] j.h. espedahlen, attack trees describing security in distributed internet-enabled metrology. master‟s thesis, department of computer science and media technology, gjøvik university college, 2007. [29] s. kremer, m. ryan, and b. smyth, election verifiability in electronic voting protocols, esorics 2010, lncs 6345, pp. 389–404, 2010. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 30, no 3, september 2017, pp. 417 427 doi: 10.2298/fuee1703417s design and implementation of non-uniform quantizers for discrete input samples and its application to an image processing algorithm  nikola simić 1 , zoran h. perić 1 , milan savić 2 1 university of niš, faculty of electronic engineering, department of telecommunications, niš, republic of serbia 2 university of pristina, faculty of natural science and mathematics, department of informatics, kosovska mitrovica, republic of serbia abstract. this paper describes an algorithm for grayscale image compression based on non-uniform quantizers designed for discrete input samples. non-uniform quantization is performed in two steps for unit variance, whereas design is done by introducing a discrete variance. the best theoretical and experimental results are obtained for those discrete values of variance which provide the operating range of quantizer located in the vicinity of maximal signal value that can appear on the entrance. the experiment is performed by applying proposed quantizers for compression of standard test grayscale images as a classic example of discrete input source. the proposed fixed non-uniform quantizers, designed for discrete input samples, provide up to 4.93 [db] higher psqnr compared to the fixed piecewise uniform quantizers designed for discrete input samples. key words: discrete input samples, grayscale image processing, non-uniform quantization, optimal input range. 1. introduction the interest in methods of digital image processing comes from two basic ideas. first of all, rapidly growing information systems aim at reducing the amount of data required for data processing in order to use narrower bandwidth, as well as to save available storage. next, visual interpretation has to be improved since digital images are widely used in a number of applications [1]. generally, all compression algorithms may be classified in two groups – „lossless‟ compression algorithms if there is no loss of information, and „lossy‟ methods if some information is lost irreversibly [1], [2]. even though there is a variety of compression algorithms for different purposes [3], research areas are still expanding. in recent years, schemes which incorporate compressive sensing became very important and received november 6, 2016; received in revised form january 17, 2017 corresponding author: nikola simić faculty of electronic engineering, university of niš, serbia, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: simicnikola90@gmail.com) 418 n. simić, z. h. perić, m. savić some restoration as well as image reconstruction schemes made an impact in the image processing field [4]-[5]. besides schemes developed for software applications, some effort is also paid to fpga based solutions [6]. this paper deals with a type of improved btc (block truncation coding) algorithm that is a kind of a „lossy‟ method, used for compression of grayscale images [7]. although the basic algorithm has been well-known for years, some upgrades proposed in recent years have found application in modern systems [8]. moreover, an improved block truncation coding algorithm based on optimized dot diffusion was proposed by guo et. al [9], whereas an effective image retrieval system was presented a year later [10]. also, a data hiding scheme based on btc algorithm, designed to embed a huge amount of watermarks was presented in the paper [11], so it can be concluded that the core algorithm can be still improved and implemented in modern systems. despite the core algorithm and its modifications usually can not improve the coding gain comparing to the modern state-of-the-art techniques such as jpeg and jpeg2000, the computational complexity of those schemes is much lower compared to the aforementioned state-of-the-art solutions, which makes it very suitable for image retrieval purposes [10]. the difference in designing of fixed uniform quantizers for continual and discrete input was observed in papers [12], [13]. further research in this direction included designing of fixed piecewise uniform quantizers described in [14]. this paper is a logical continuation of the research. we expect that the gain due to different non-uniform quantizer designing for discrete and continual input is higher than the maximal difference of psqnr (peak signal-to-quantization-noise ratio) between fixed piecewise uniform (l=16) and optimal non-uniform quantizer that is equal to 0.7 [db] (for continual input signal)[14], [15]. the proposed design is fixed, it was tested for a set of standard test grayscale images and optimal parameters are found. however, non-uniform quantizer can be designed by using lloyd-max algorithm which represents a very powerful iterative solution [16]. moreover, highquality performance can be achieved by introducing variance adaptation which would provide better quality of reconstructed image [17]. on the other hand, the proposed design is less complex and it requires less processing time, as it represents a kind of fixed scalar quantization. the paper is organized as follows. in section 2 basic modelling of discrete input source is shown, improved by introducing non-uniform quantization. section 3 describes an algorithm for grayscale image compression that is used for experimental analysis. finally, the obtained theoretical and experimental results as well as the obtained gain in comparison to other models are presented in section 4. 2. system model the considered system consists of two stages − the purpose of uniform quantizer q0 exploited in the first stage is to convert analog input signal to discrete samples, whereas the proposed quantizer q, designed for discrete input, is exploited in the second stage in order to perform additional data compression. in the first step, samples with a continual amplitude have to be quantized with a fixed uniform quantizer q0 which is described with n0 output levels, x={x1,x2,…, xn0 }, and the maximal amplitude xmax, which depends on the input signal range [14], [17]. considered pixel values of standard grayscale images are described with 8 bits and they can take values from 0 to 255, so xn0 = 255. furthermore, quantization process in btc algorithm is design and implementation of non-uniform quantizers for discrete input samples 419 based on quantization of distinction between the original and mean pixel value of all pixels in a block. therefore, the number of output levels n0 is equal to 512. on the other hand, samples with continuous amplitude can be described only as random variables, since the input information is unknown. in probability theory, random variables are described by using probability density function (pdf) which provides the relative likelihood for the observed random variable to take on a given value. so far, it is shown in literature that laplacian source ensures good matching between a btc model and reality [1], [7]. consequently, in the rest of the paper we will suppose that the information source is laplacian with a memoryless property and mean value equal to zero. it is defined with: 1 2 | | ( ) exp 2 x p x          , (1) where  represents a standard deviation of the random variable x. the second step of quantization process involves quantization of discrete output samples from the quantizer q0 using n quantization levels, where n < n0. probabilities of these discrete input levels for laplacian distribution are: 1 12 21 ( )d exp exp 2 i i x i i i x x x p p x x                             , (2) where i = 0, … , n0 1. the main goal of this phase is additional data compression. in the rest of the paper the quantizer from the second step is denoted with q. this paper deals with designing and optimization of quantizer q. so far in literature, the application of both uniform and piecewise uniform quantizers was described, and in this paper we propose application of a non-uniform quantizer since it provides better quality of reconstructed signal for the equal number of quantization levels [1]. the design of the non-uniform quantizer q is done as follows. firstly, we design the optimal compandor with n quantization levels for the unit standard deviation (σ = 1). its compressor function maps the range (-, ) to (-1, 1). the compressor function formed in this way can be defined with:      ttp ttp xc x d)( d)( 21)( 3/1 3/1 . (3) decision thresholds obtained in this way can be calculated as [15]: 2 0 2 log 2 3 n i n i ti        , (4) . 2)(2 log 2 3 ni n in n ti         (5) 420 n. simić, z. h. perić, m. savić furthermore, representational levels are determined with [15]: 2 11 2 log 2 3 n i n i i        , (6) . 21)1(2 log 2 3 ni n n n i         (7) in all previous equations log(x) represents natural logarithm of x. the range of quantizer designed in this way is (tn, tn). since the obtained range is not adjusted to the theoretical range of pixel values, denormalization is required. due to the fact that for a low number of quantization levels tn < xn0 [15] is always valid, denormalization is performed by introducing a discrete variance d̂ . it is obtained by multiplying decision thresholds ti and representational levels i with discrete variance d̂ that is used for quantizer designing. finally, decision thresholds and representational levels of quantizer q are determined with: ,0,ˆ nitx dii   (8) .1,ˆ niy dii  (9) the maximal support xn can be defined in different ways [15], and in this paper we have decided to choose a simplest form in order to place the last represent at the half of the decision range. however, in the case if xn < xn0 , the overload distortion will exist. on the other hand, if xn > xn0 , the range [xn0 , xn] will be unused. as a result, higher granular distortion would exist. if the system conditions require designing of fixed quantizer with the unused range (case xn > xn0 ), we propose additional modification by introducing another denormalization parameter . its function is to adapt the range [xn, xn] formed in the previous step, to the range [xr, xr], where the desired maximal value of the range is denoted with xr. consequently, we define parameter  with: nr xx / . (10) finally, decision thresholds and representational levels of quantizer q in the case xn > xn0 are equal to: ,0,' nixx ii  (11) .1,' niyy ii  (12) as this is a kind of a „lossy‟ compression method, some information will be lost irreversibly during the quantization process. as a standard measure of a reconstructed signal quality we estimate distortion (d) which consists of both granular (dg) and overload (do) distortion that can be calculated with [8], [9]: design and implementation of non-uniform quantizers for discrete input samples 421 ,)()(2 2/ 1 1 2      n i k j ijiijg i xpyxd (13) .)()(2 1 2 2/0    s j jnj xpyxd (14) in eq. (13) parameter ki denotes the number or input levels mapped with yi whereas xij  x. moreover, in eq. (14) xj  x, parameter s denotes the total number of pixel values from the theoretical range, which are not placed within the designed range. this parameter can be calculated as: . 0 nn xxs  (15) finally, the total distortion is equal to: .ogt ddd  (16) 3. algorithm for image processing the proposed design of second-stage quantizer q from section 2 is tested by analyzing its application to the image processing algorithm, defined as follows. 1. the image is divided into m non-overlapping blocks of dimensions m  m. 2. each block is processed separately by sending data and reconstructing information at the receiver side. the algorithm processes pixels from left to right and from top to bottom. 3. the mean value of all pixels in the block (xav) is calculated and then quantized ( avx̂ ) with a fixed uniform quantizer. in order to minimize the error in the reconstruction process, coding process uses values which are available to the decoder. 4. the difference blocks of m  m pixels are formed. elements of a block are denoted with di,j and obtained as: avjiji xxd ˆ,,  , (17) where xi, j is original pixel value and i = 1,…, m; j = 1,…, m. elements of a difference block have laplacian distribution [1], and they can take integer values [xn0 , x n0 ]. 5. elements of difference blocks are quantized by using proposed fixed non-uniform quantizers from section 2. these elements are denoted with jid , ˆ , coded with log(n) bits and transmitted to the receiver. 6. in the receiver, pixel reconstruction is done as: avjiji xdx ˆˆˆ ,,  . (18) during quantization process there was made distortion of original image in step 5. it can be experimentally measured as [9]: 2 , , 1 1 1 ˆ( ) m m i j i j i j d x x m m       2 , , 1 1 1 ˆ( ) m m i j i j i j d d m m       . (19) 422 n. simić, z. h. perić, m. savić the flow chart of this algorithm is shown in fig. 1. fig. 1 flow chart of the proposed grayscale image compression method 4. numerical results to demonstrate the performance of the proposed algorithm for image compression, we will show a comparison of theoretical with experimental results obtained for a set of standard test grayscale images as well as a comparison with the results available in literature for piecewise uniform quantization model [14]. all theoretical calculations and experimental results are done for a set of three standard test grayscale images (lena, street and boat). we estimate system performance using average bit-rate rb and psqnr which represent standard measures. since we discuss fixed non-uniform quantizers, average bitrate depends on the number of quantization levels n and the number of bits required for transmitting the mean value avx̂ . on the other hand, psqnr is defined with [13], [14], [17]: ]db[log10 2 10 0            d x psqnr n (20) design and implementation of non-uniform quantizers for discrete input samples 423 for measuring experimental psqnrex we use eq.(20), whereas d is defined with eq. (19). however, theoretical results have to include weighting function, since input samples do not occur with the same probabilities [14]. the weighting function in linear domain for tested images is shown in fig. 2. fig. 2 the weighting function in fig. 2, i represents standard deviation of the difference between pixels and the mean value of the block that pixel belongs to. taking previous consideration into account, including weighting averaging for the observed test grayscale images and considering that total distortion is defined with eq.(16), theoretical results are denoted with psqnrwav. this measure is defined with [14]: ]db[)()( 255 1 iiwav psqnrwpsqnr i    (21) table 1 shows obtained experimental results of applying the proposed algorithm for grayscale image compression as well as corresponding theoretical results. it can be seen that experimental results very well follow changes of theoretical values, whereas relative difference between theoretical and experimental values occurs due to non-ideal modelling with laplacian source as well as because of averaging for a set of images [18]. from table 1, it can be clearly seen that the best theoretical and experimental results are obtained for those values of discrete variances ( 17ˆ d for n = 32 and 15ˆ d for n = 64) which ensures input range of quantizer q as close as possible to the range (152, 152) [14], [17]. consequently, this means that parameter xr = 152. 424 n. simić, z. h. perić, m. savić table 1 comparison of experimental and theoretical results for the proposed model n d̂ psqnrwav[db] psqnrex . [db] nx rb [bpp] 32 15 46.82 47.57 132 5.375 17 46.43 46.94 149 29 44.59 44.51 255 64 15 49.38 51.57 154 6.375 24 49.00 50.85 247 29 48.01 48.50 298 moreover, it can be noticed that for the case n = 64 and 29ˆ d , overload distortion does not exists since the range (-298, 298) is wider of the theoretical range (255, 255) and the support region is not adapted to the theoretical one. in this case, decision thresholds and representational levels could be calculated using eqs.(10)-(12). however, this modification involves additional hardware requirements and processing time as well as information about xr for specific systems regarded to the nature of the input signal. in fig. 3 we have shown original test grayscale images of resolution 512512 pixels, while in fig. 4 we have presented corresponding images from fig. 3, after processing with the proposed algorithm for n=32 quantization levels and .15ˆ d (a) (b) (c) fig. 3 standard test grayscale images: (a) lena, (b) boat and (c) street (a) (b) (c) fig. 4 standard test grayscale images from fig. 3, after compression with the proposed algorithm (n=32): (a) lena, (b) boat and (c) street design and implementation of non-uniform quantizers for discrete input samples 425 in order to compare the obtained results with models available in the literature, we perform comparison of both experimental and theoretical results with system performance of the model based on fixed piecewise uniform quantizers designed for discrete input, as it represents the model with similar complexity. the experimental comparison is measured as experimental gain of the proposed method and it represents the difference of psqnr between the proposed and equivalent results from savic et al. [14], i.e. gain [db] = psqnrex . [db] psqnreq(n) inf [db], where equivalent results are provided for n=32 and n=64 quantization levels. in [14], obtained experimental results as close as to the nonuniform quantization are achieved for n = 32 and l =16 (psqnrex(32) inf = 42.64 [db], rb = 5.375 [bpp]), whereas corresponding theoretical performance is psqnrth(32) inf =42.29 [db]. since the paper [14] did not deal with systems that use n = 64 levels, comparison for these results is done considering the rule that psqnr values increase/decrease for 5.5 [db] by changing the bit-rate for 1 bit [13], [14]. respecting that bit-rate difference between quantizers that are designed for n = 32 and n = 64 quantization levels is 1 [bpp], corresponding result for n = 64, which is used for comparison, is psqnreq(64) inf = 42.640+1*5.5 = 48.14 [db]. comparing the obtained results from table 1 with corresponding results (psqnrex(32) inf and psqnreq(64) inf ) from [14], the obtained experimental gain is shown in table 2 for the same number of quantization levels. table 2 experimental gain of the prposed model in comparission to the piecewise uniform quantization model. n d̂ gain[db] 32 15 4.93 17 4.30 29 1.87 64 15 3.43 24 2.71 29 0.36 by observing table 2, it can be concluded that fixed non-uniform quantizers designed for discrete input samples for n = 32 and n = 64 quantization levels gives from 0.35605 to 4.93 [db] higher psqnr compared to the fixed piecewise uniform quantizers designed for discrete input samples in addition, comparing theoretical results from table 1 with psqnrth(32) inf , it can be concluded that beside experimental gain, the proposed improved theoretical model that uses discrete variance predicts gain up to 4.52 [db] compared to the same similar system, confirming experimental results. 5. conclusion in this paper we described a novel method for non-uniform quantizer design for discrete input samples and we tested the proposed quantizer for grayscale image coding. considering that quantizers designed for continuous and discrete signals have different nature, we have introduced discrete designing variance as an additional and effective parameter in the 426 n. simić, z. h. perić, m. savić process of quantizer designing, for discrete input samples. system performance was discussed using weighting averaging of psqnr for a set of three standard test grayscale images. the experimental results demonstrate that the performance of the proposed method outperforms other similar models obtained gain of the proposed discrete solution is much higher for the most of discussed cases than the maximal difference of psqnr between piecewise uniform (l=16) and optimal non-uniform quantizer that is equal to 0.7 [db] (for continual input signal), which proves the introduction of the proposed quantizer design. furthermore, additional system modification was proposed to adjust quantizer design in the special cases. however, this modification requires additional computing time as well as information about a set of input images. to generalize this approach, future work will include testing of specific images in order to find optimal values of input range support as well as implementation for different types of discrete input source. acknowledgments: this work is supported by serbian ministry of education and science through mathematical institute of serbian academy of sciences and arts (project iii44006) and by serbian ministry of education, science and technological development (project tr32035). references [1] jayant n. s., noll p, digital coding of waveforms, prentice hall pb, 1984. [2] yun q., shi, huifnag sun, image and video compression for multimedia engineering, taylor & francis group, 2008. [3] m. savic, z. peric, n. simic, “coding algorithm for grayscale images based on linear prediction and dual mode quantization”, expert systems with applications, vol. 42, pp. 7285–7291, 2015. [4] n. eslahi, a. aghagolzadeh, “compressive sensing image restoration using adaptive curvelet thresholding and nonlocal sparse regularization”, ieee transactions on image processing, vol. 25, no. 7, pp. 3126 – 3140 july 2016. [5] j. musić, t. marasović, v. papić, i. orović, s. stanković, “performance of compressive sensing image reconstruction for search and rescue”, ieee geoscience and remote sensing letters, vol. 13, no. 11, pp. 1739 – 1743, nov. 2016. [6] a. napieralski, j. cłapa, k. grabowski, m. napieralska, w. sankowski, p. sękalski, m. zubert, “image and video processing with fpga support used for biometric as well as other applications”, facta universitatis, series: electronics and energetics, vol. 28, no. 2, june 2015, pp. 165 – 175. [7] y. yang, q. chen, y. wan, “a fast near-optimum block truncation coding method using a truncated kmeans algorithm and intre-block correlation”, international journal of electronics and communications (aeu), 2011, no. 65, pp. 576-581. [8] s. kim, d. lee, j-s. kim, h-j. lee, “a block truncation coding algorithm and hardware implementation targeting 1/12 compression for lcd overdrive”, journal of display technology, vol. 12, no. 4, pp. 376−389, april 2016. [9] j-m., guo, y-f., liu, “improved block truncation coding using optimized dot diffusion”, ieee transactions on image processing, vol. 23, no. 3, pp.1269−1275, march 2014. [10] j-m., guo, h. prasetyo, n-j., wang, “effective image retrieval system using dot-diffused block truncation coding features”, ieee transactions on multimedia, vol. 17, no. 9, pp. 1576−1590, september 2015. [11] j-m., guo, y-f., liu, “high capacity data hiding for error-diffused block truncation coding”, ieee transactions on image processing, vol. 22, no. 12, pp. 4808−4818, december 2012. [12] m. savić, z. perić, m. dinčić, “design of forward adaptive uniform quantizer for discrete input samples for laplacian source”, electronics and electrical engineering, no. 9 (105), pp. 73-76, 2010. [13] m. savić, z. perić, m. dinčić, “an algorithm for grayscale image compression based on the forward adaptive quantizer designed for signals with discrete amplitudes”, electronics and electrical engineering, no. 2 (118), pp. 13-16, 2012. design and implementation of non-uniform quantizers for discrete input samples 427 [14] m. savic, z. peric, m. dincic, “coding algorithm for grayscale images based on piecewise uniform quantizers”, informatica, vol. 23, no. 1, pp. 125-140, 2012. [15] z. peric, m. petkovic, m. dincic, “simple compression algorithm for memoryless laplacian source based on the optimal companding technique”, informatica, vol. 20, no. 1, pp. 99–114, 2009. [16] z. peric, j. nikolic, “an effective method for initialization of lloyd-max's algorithm of optimal scalar quantization for laplacian source”, informatica, vol. 18, no.2, pp. 279-288, 2007. [17] n. simic, z. peric, m. savic, ”improved algorithm for grayscale image compression based on multimode coding algorithm”, revue roumaine des sciences techniques-serie electrotechnique et energetique, tome 59, issue 3, pp. 315-323, october 2014. [18] z. peric, n. simic, m. savic, “analysis and design of two stage mismatch quantizer for laplacian source”, elektronika ir elektrotechnika, vol. 21, no. 3, pp. 49-53, 2015. instruction facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 527 540 doi: 10.2298/fuee1504527s detection and suppression of parasitic dc voltages in 400 v ac grids slobodan n. vukosavic  university of belgrade, dept. of electrical engineering, 11000 belgrade, serbia abstract. grid connected static power converters inject parasitic dc currents due to the offset in current sensing, control imperfections, asymmetries in power switches and other secondary effects. ever growing number of grid connected converters contributes to an increase of dc bias in ac grids, and this brings the cores of distribution transformers closer to saturation and increases their power losses. this paper provides sensitivity analysis of distribution transformers to the dc bias, and considers solutions for detecting and compensating the parasitic dc components in ac grids. active compensation methods can be advantageously used in suppressing the dc bias at grid connection point of the power converter. the sensing approach proposed in this paper makes use of saturable ferromagnetic cores and a low cost dsp for signal analysis and processing. proposed algorithm uses distortion of the magnetizing current of a parallel connected saturable core due to the bias. experimental results demonstrate the capability for detecting and compensating the bias voltages far below 1 mv in 0.4 kv grids. the paper describes the principles of dc bias detection and it provides the guidelines for the proper design of magnetic components. high precision of the proposed dc bias sensing is thoroughly verified on the experimental setup connected to a 0.4 kv grid. key words: power quality, distribution transformers, power converters, dc bias. 1. introduction dc injection into the low-voltage and medium-voltage ac grids comes mostly from grid connected static power converters. recent developments in power electronics, electrical drives and distributed generation leads to a large number of static power converters connected to the grid, with the potential to inject a parasitic dc bias into the grid. static power converters with pwm control can produce ac waveforms with a low distortion factor [1], but they can also introduce parasitic spectral components, including the dc bias. numerical solutions can be used to reduce the parasitic spectral components [2], but the remaining dc offset cannot be eliminated completely. therefore, all the transformerless received march 22, 2015 corresponding author: slobodan n. vukosavic university of belgrade, dept. of electrical engineering, 11000 belgrade, serbia (e-mail: boban@ieee.org) 528 s. n. vukosavic grid-connected power converters have the potential of introducing a small, parasitic dc offset into the ac grid [3]. widespread use of electronically controlled electrical drives [4], which are often regenerative, makes the problem even more emphasized. recently introduced multiphase and multimotor drives [5] are also capable of introducing a parasitic dc bias through the front end converter. hence, whenever the power interface to the grid is performed through a static power converter, there is a potential of dc bias in ac grids has an adverse effect on the operation of power transformers [6,7]. adverse consequences are also possible in certain electrical loads [8]. widespread use of distributed power sources attached to the grid through a power electronics interface, as well as an increased use of active rectifiers in modern electrical speed drives [9] and static power converters [10] emphasizes the problem of dc injection. dc bias currents limits specified by the norms [11] and discussed by international working groups are difficult to measure. consequential dc bias voltages are even lower due to very low equivalent resistance in ac grids. therefore, the need emerges to measure dc bias voltages and currents in ac grids with high precision. dc injection of grid connected power converters is caused by the delay mismatch in gating circuits and imperfections of power switches [12], by the offset in current sensing [13], by dc injection based methods for detecting the stator resistance and temperature in grid-connected ac machines [14], while other sources of dc bias include geomagnetic induced currents [15], hvdc transmission, railway signalling equipment and similar. even a small dc bias may result in saturation of power transformers [16], an increase in their iron losses, increased corrosion and erroneous operation of measurement and protective equipment. relevant norms [11] prescribe the dc injection limit as 0.5% of the grid-connected power converter rated current. on the other hand, a dc bias of 0.5% of the rated current of sn > 500 kva distribution transformer [17,18] corresponds to more than 50% of the rated magnetizing current, and this would saturate the core and trip the protections. considering ever growing number of grid connected static power converters, it is essential do devise and use devices for dc bias detection and compensation [10]. distribution power transformers with 0.4 kv secondary windings have a very low winding resistance and a very low magnetizing current [17,18]. a dc bias voltage of only 1mv may introduce a 5% offset in the magnetizing current, moving the h field in b-h plane away from the origin. parasitic dc current in a transformer results in half-cycle saturation and an increase in reactive power, leakage flux, stray losses and temperature of the core, clamping plates, the tank walls and bolts. therefore, dc bias detection and compensation is required to suppress the parasitic dc voltages in 0.4 kv grid far below 1 mv level. transformerless grid-connected power converters are the source of the dc injection. equipped with adequate dc bias sensing and controls [19], they can be also used for suppressing the parasitic dc voltages at the grid connection point. it is rather difficult to measure very small dc offsets embedded in ac voltages, as the ratio between the two exceeds 10 5 -10 6 . required precision of 2-3 ppm has to be maintained over the range of operating conditions. this cannot be achieved even with advanced sensors [13, 20]. considerable effort has been made in improving precision of dc bias sensing [9, 19, 21, 22] and applying novel sensing techniques within closed loop dc bias suppression systems [10, 12, 23, 24]. in grid connected power converters with intermediate dc link circuit, parasitic dc injection can be determined from line frequency oscillations of the dc link voltage [10] with precision of 0.1%. at the same time, the offset introduced by hall effect current sensors replaced in the dc link can be removed by auto-calibration [12]. detection and suppression of parasitic dc voltages in 400 v ac grids 529 dc injection can be also suppressed [23] by inserting an isolating power transformer, by using the half bridge topologies, or by inserting a series blocking capacitor, but these methods increase the cost, size and power losses. therefore, the efforts were mainly focused towards improving the accuracy of dc bias methods and devices [13, 18-26]. in most cases, proposed reading of very small dc bias in the presence of a large ac signal is based on nonlinear effects in ac excited, dc biased iron cores. even a small bias results in detectable amounts of even harmonics [29-32] in distorted magnetizing current of saturable iron cores. parasitic dc voltage in ac grid can be detected by processing the magnetizing current im in parallel connected choke wound on saturable iron core. dc bias sensing proposed in [19, 21, 22, 24-26] compares the positive and negative peaks of the magnetizing current, which gets distorted in the presence of a dc bias. used in conjunction with an 8a transformerless power converter [24, 25], it suppresses the dc injection to 4ma. the same im peak comparing method can be advantageously used [26] in suppressing magnetic saturation in transformers used to connect a static power converter to the grid. with additional compensation winding on parallel connected choke [21, 22], the peak comparing method can be used to measure the dc bias in 0.4kv ac grids, offering precision better than 3mv for phase voltages uph = [170v .. 220v]. in this paper, the problems of detecting and suppressing the dc bias in ac grids is discussed and analyzed. an overview of sensing methods is followed by the proposal of a new, improved sensing technique based on nonlinearity of parallel connected choke, wound on a saturable iron core [29]. the main objective is achieving precision in dc bias sensing considerably better than 1 mv in 0.4 kv grids. the two main tools in achieving this goal are (i) the algorithm of detecting the bias and (ii) the approach to winding the choke and designing the filters. section ii provides a brief analysis distribution transformer parameters and studies the effects of parasitic dc voltages in 0.4kv grids, reinstating the required precision of dc bias sensing. in section iii, the state of the art sensing solutions are considered with the aim of identifying the factors that limit their accuracy. proposed guidelines to designing magnetics are summarized in section iv. the algorithm proposed to suppress the dc bias is given in section v, while section vi summarizes experimental results. discussion and conclusions are given in section vii. 2. required accuracy of dc bias sensing dc bias currents may have a detrimental effect on the integrity of the distribution and power transformers or their long term performance, which has a negative effect on the overall system reliability. typical winding resistances and magnetizing (no load) currents of distribution transformers up to 2500 kva are plotted in fig. 1 from data available in [33]. for transformers rated s = 1mva and above, the rated magnetizing current stays below 1% while the secondary resistance resides below 0.5%. this means that a dc offset voltage of udc > un /20000 produces dc bias current equal to the rated magnetizing current. considering 0.4kv winding, it is of interest to explore the effect of very small dc voltages on dc component of the magnetizing current. in fig. 2, the ratio between the dc bias current and the rated magnetizing currents is given for udc = 1mv and udc = 500v. for s = 1mva and above, udc = 1mv adds a dc offset of more than 5% to the magnetizing 530 s. n. vukosavic current. the iron loss investigation reported in [37] considers 2-, 3-, and 4-limb cores with single phase ac magnetizing and a superimposed dc bias. results plotted in figs. 6 and 7 of [37] suggest that the dc current equal to 5% of the maximum magnetizing current in normal conditions increase the iron losses in 2-, 3-, and 4-limb cores by 9%, 12% and 22%, respectively. although the core loss in distribution transformers is rather low (0.04% for a 1mva transformer [33]), its change can be an indicator of the dc injection problem severity. fig. 1 relative winding resistance and magnetizing (no load) currents of three phase line frequency distribution transformers up to 2500 kva. fig. 2 the ratio between the dc bias current and the rated magnetizing current for dc offset voltages of 500 v and 1 mv. other effects of dc injection may prove more detrimental to a distribution power transformer. the presence of a dc component contributes to the asymmetric magnetic core saturation during one sinusoidal semi-period, also called half-cycle saturation, causing a number of adverse effects [34-37]. with half-cycle saturation, transformers have an increase in acoustic noise, reactive power, leakage flux and stray losses, harmonics in induced voltages and losses in leads, clamping plates, transformer tank and bolts. detection and suppression of parasitic dc voltages in 400 v ac grids 531 for the standard magnetic material, commonly used in building the magnetic core of the power transformers, the change of hmax, hrms, specific power losses p and specific apparent power s are given in fig. 3. at high values of the flux density b, a dc offset of only 10% of the peak value can double the apparent power and increase the iron losses by 60%. therefore, it is of interest to suppress the dc bias current far below the level of imnom/10, where imnom stands for the rated magnetizing current. fig. 3 peak value of the magnetic field, rms value of the magnetic field, specific power losses and specific apparent power s as a function of the flux density. high efficiency distribution power transformers that have lower winding resistances and larger dc currents in their windings for the same parasitic dc voltage across the windings. moreover, their operating point in b-h plane comes closer to saturation. therefore, they are more sensitive to dc bias. with introduction of high efficiency transformers and increasing number of grid connected static power converters, the need to sense and compensate dc bias in 0.4kv ac grids is more evident. suppressing the dc bias below 1mv level requires detection methods and devices with considerably lower sensing errors. 3. accuracy of peak detection methods previously developed methods for sensing of parasitic dc voltages in ac grids [19, 21, 22, 24-26] make use of changes in magnetizing current of parallel chokes, namely, the iron core reactors which are parallel connected to the grid voltage. in the presence of a dc bias, the magnetizing current changes [29] and provides the grounds for detecting the sign and amplitude of parasitic dc current (fig. 4). distorted magnetizing current has the maximum positive value imax and the peak negative value of imin. the positive peak of the magnetizing current (imax) and the negative peak (imin) are supposed to be equal in the absence of the dc bias. considering the core which operates next to saturation, an hmax p s hrms 100 a/m 1 va/kg 532 s. n. vukosavic injection of dc bias would result in considerable change in the magnetizing current. the values imin and imax get different, thus providing the means to obtain the sign and estimate of the bias. the peak difference i is used in dc bias detectors presented in [19, 21, 22, 24-26]. all of these solutions compare the positive and negative peaks of the magnetizing current in a parallel connected reactor. the very concept of dc-compensated magnetic core is proved reliable [20] and also used in closed loop current sensing. fig. 4 suppression of dc injection from transformerless grid connected power converters. with peak detection method applied to grid-connected power converters (fig. 5) it is possible to use detected signal and correct the pwm pulses of the converter in order to drive the parasitic dc offset down to zero. whenever a parasitic dc bias produces an offset in magnetizing current, the difference i arises in a manner illustrated in fig. 4. the power converter in fig. 5 acts towards eliminating the bias by means of introducing small changes in pwm pattern. this approach can be used to suppress the dc injection from transformerless grid connected power converters. any dc injection caused by the converter imperfections results in a dc bias. in turn, the signal i is detected from the saturable core. this signal is used to affect the pwm commands of the grid connected power converter in the way that suppresses the dc injection and brings the difference i towards zero. fig. 5 suppression of dc injection from transformerless grid connected power converters. with spectrum-based sensing approach, the lc filter across the choke is not required. detection and suppression of parasitic dc voltages in 400 v ac grids 533 the difference i between the peak values of the magnetizing current depends on the instantaneous values of the current at instants of zero crossings of the supply voltage. therefore, the value of i can be affected by the noise and voltage harmonics coming from the grid. for this reason, the state of the art dc bias detectors include a low pass lc filter, designed to maintain integrity of detected i. this filter is drawn on the left side in fig. 5. reported accuracy of peak detection methods shows the capability to detect the dc bias current component within the choke magnetizing current up to 1/30 of the rated ac magnetizing current (idc/imag = 1/30). a drop in accuracy is detected with ac voltage off the rated value. in table 1, the ac voltage is varied from 68% up to 120%. the minimum detectable dc current idc drops at least 5 times as the voltage shifts away from the rated value. this represents a serious drawback of peak detection methods. considered drawback can be removed by replacing the peak detection method by other means of extracting the information on the dc bias from the magnetizing current measured in the parallel choke. sensing precision can be also improved by an improved design of the sensing core, focused on increasing the sensitivity. table 1 reduced sensitivity of the peak detection methods in operation with ac voltages off the rated value ac voltage 68% 77% 90% 100% 120% idc/imag 1/6 1/10 1/17 1/30 1/4 4. core design the sensitivity depends on the ratio idc/imag. detectable dc voltage udc depends in the sum of the active resistances in the reactor circuit, hence, idc = udc/r. therefore, in order to reduce the minimum detectable udc = idcr = imag(idc/imag) r, and given the ratio (idc/imag), it is of interest to minimize the product imagr. with that in mind, any additional lc filter is counterproductive, as it increases r and reduces sensitivity. a simple and straightforward way of getting a suitable sensor is adopting a small, ready-made toroidal transformer, with the primary winding already set for the line frequency and the ac grid voltage. in table 2, a summary is given of the key parameters of standard single phase line frequency transformers wound on toroidal iron core. these toroidal cores are made of most standard iron sheets, and available off the shelf. the table comprises relative magnetizing current and relative winding resistance for the transformers with the rated power ranging from 20va up to 500va. the sensitivity of the core to the dc bias is inversely proportional to the ri product. hence, the core of 50va is five time more sensitive than the core of 20va. on the other hand, increasing the power from 50va up to 500va raises the sensitivity roughly two times. for that reason, it appears suitable to avoid usage of large and heavy 500va cores, and remaining within 50va range. the rightmost column in table 2 provides the factor risnom, which is lower for a larger "sensitivity per va". namely, it illustrates how "the investment" into a larger core pays off as an increase in dc bias sensitivity. the most appropriate choices are the cores with 30va and 50va. 534 s. n. vukosavic table 2 properties of standard toroidal cores used for single phase line frequency transformers sn [va] imag/inom rrelative ri *1000 ri snom 20 0.0286 0.0483 1.3814 0.0276 30 0.0104 0.0434 0.4514 0.0135 50 0.0088 0.032 0.2816 0.0141 80 0.0096 0.0397 0.3811 0.0305 150 0.0066 0.0341 0.2251 0.0338 200 0.0074 0.0331 0.2449 0.0490 300 0.006 0.0254 0.1524 0.0457 400 0.0055 0.0264 0.1452 0.0581 500 0.0053 0.0238 0.1261 0.0630 the application in fig. 5 requires the sensing core with only one winding, the winding connected across the ac voltage. therefore, it is beneficial to use all the winding space of the core and reduce the winding resistance to the minimum. hence, an off the shelf toroidal transformer of 50va should be rewound. the secondary winding can be removed, and the available winding space used for the primary winding with an reduced resistance. in this manner, the winding resistance can be halved, and the sensitivity to dc offset doubled. 5. control of the dc bias suppression system in fig. 5, the sensing choke is connected across the ac voltage. the dc bias within the ac voltage may be injected from the grid side power converter in the right of the figure, but also from other grid side converters connected to the same grid. to begin with, it is necessary to detect the bias. as discussed before, conventional peak detection methods have a series of drawbacks, and there is a need to deploy a more robust, more reliable and more sensitive algorithm for extracting the bias information from the magnetizing current of the choke. robustness against the grid noise, pwm noise and other noise sources intrinsic in ac grids is a vital feature in sensing the dc bias. instead of relying on time-domain properties of relevant signals, it is possible to mode to frequency domain and consider the second harmonic of the magnetizing current, renown for being proportional to the dc bias. in table 3, a core of a small toroidal single phase transformer is tested for the second harmonic in the presence of the dc bias. the bias voltages are changed from 0mv up to 1.4mv. the test is performed with ac voltages ranging from 70% up to 116%. for a wide range of ac voltages, the amplitude of the second harmonic is proportional to the bias. therefore, it can be advantageously used in detecting the bias. notice in table 3 that the residual second harmonic, obtained with udc=0, does not exceed 0.42% of the rated magnetizing current. considering a sensing core with the weight of m < 0.7 kg, this corresponds to 9 a, and it contributes to the measurement error of 140 v (0.14 mv). detection and suppression of parasitic dc voltages in 400 v ac grids 535 table 3 second harmonic of the magnetizing current, expressed relative to the rated value of the magnetizing current. the values are given for the range of ac voltages and dc bias values. udc [mv] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 uac=70% 0.001 0.02 0.026 0.071 0.097 0.12 0.144 0.157 uac=88% 0.002 0.036 0.067 0.093 0.123 0.156 0.184 0.200 uac=100% 0.0026 0.0338 0.07 0.096 0.132 0.158 0.185 0.209 uac=116% 0.0042 0.031 0.078 0.097 0.143 0.157 0.191 0.198 the bias amplitude is obtained from the amplitude of the second harmonic, while the sign is obtained from the phase shift of the second harmonic with respect to the fundamental. in fig. 5, the signals are fed back to the grid connected power converter. within the pwm algorithm of the converter, it is necessary to introduce small changes of the width of the voltage pulses, thus introducing a small dc correction of the output voltages. this change is calculated so as to suppress the dc bias from the grid. namely, as a consequence, the grid connected converter and the dc offset within its output voltage would introduce the dc injection required to drive detected dc bias down to zero. precision in keeping the bias at zero is defined by the sensor, and it is estimated to 140 v. from the results given in table 3, the amplitude of demodulated 2 nd harmonic can be expressed as 2 2( )dc dch u k u , (1) where k2  0.15 for the sensing core under consideration, and udc is the dc bias across the primary winding. this bias produces the primary side dc bias current idc. if rp is the primary resistance, 2 2 3p dc dch k r i k i  . (2) in fig. 6, controller produces the modulation index m for the auxiliary pwm h-bridge which feeds the voltage u2 across the compensating winding. as a consequence, the current i2 provides correction and zeroes out the dc bias within the core. assuming that the primary winding has n1 turns while the secondary (compensating) winding has n2 = q n1 turns, the second harmonic in the presence of both primary and secondary magnetomotive forces is 2 3 2( )dch k i qi  . (3) assuming that the controller has an integral action with the gain ki, 2 2 3 2( )i i dc k k u h k i qi s s    . (4) the current i2 comes as a consequence of the voltage u2. with the resistance r2 and the inductance l2 of the compensating winding, 2 2 2 2 . u i r sl   (5) eventually, the current i2 response to the bias idc is defined by 536 s. n. vukosavic 3 2 2 2 2 3 ( ) ( ).i dc i k k i s i s s l sr k k q    (6) dynamic response of the closed loop can be tuned by the gain ki. since the dc bias fluctuations are rather slow, there is no need to select excessively fast response and too large gain. in the experimental setup, response time is characterized by the time constants of 200ms. in steady state conditions, the current i2 is proportional to the bias idc, and it reflects the bias voltage udc of the grid at the point of the common connecctions (pcc). 2 1 ( ) ( ).dci i q    (7) fig. 6 using the sensing reactor with the compensating winding. control circuit sets the voltage u2 in order to obtain the current i2 of the compensating winding which zeroes out the offset from the sensing core. while the circuit in fig. 6 detects the dc bias within the ac grid, the setup in fig. 7 can be used to perform an active action and compensate the bias. the controller senses the second harmonic and introduces the correction m of the modulation index which is used within the grid connected power converter. in this way, a dc current i2 is injected into the grid. when the controller reaches the balance, the current i2 zeroes out the original dc bias of the grid and brings the voltage udc to the zero. fig. 7 using the grid connected power converter as an actuator in closed loop dc bias suppression system. control circuit detects the second harmonic, concludes on the dc bias, and produces the dc voltage correction u2. this voltage injects the dc current i2 which zeroes out the dc bias detected across the grid connection. detection and suppression of parasitic dc voltages in 400 v ac grids 537 6. experimental results the setup in figs. 5 and 7 comprises the sensing choke, the signal processing block and the grid connected power converter capable of injecting a controllable dc bias. the closed loop gains of the bias-removal control loop are set to obtain the closed loop response characterized by the time constant of 150 ms. experimental results are given in fig. 8, where the trace of detected dc bias illustrates the operation of the dc bias suppression controller. the scaling is 500ms per division on the x-axis and 0.5mv per division on vertical axis. an artificial bias of 2.5mv is introduced into the systems, and it is removed in, roughly, 200ms. fig. 8 transient response of the dc bias suppression controller. the scaling of x-axis is 500ms per division. the vertical axis shows detected dc bias with the scaling of 0.5mv per division. an artificial bias of 2.5mv is introduced into the systems, and it is removed in, roughly, 200ms. steady state accuracy is tested in regimes where the sensing is more difficult, namely, with av voltage reduced to 70%, where the dc bias has a lesser effect on distortion of the magnetizing current. for the close-loop dc bias suppression, given in fig. 7, the results are given in table 4 for a range. these results present the residual error for a range of dc bias voltages. these results demonstrate that, for a range of operating conditions, precision in sensing and removing the dc bias can be maintained with residual errors inferior to 140 v. considering the amplitude of superimposed ac voltages, this results brings the measurement precision better than 1 ppm. table 4 steady state accuracy of the proposed solution udc [mv] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 residual error in [v] 80 101 33 129 117 57 73 17 538 s. n. vukosavic -1 -0.5 0 0.5 1 1.5 -100 -50 0 50 100 150 accuracy in detecting dc bias parasitic dc voltage bias r e s id u a l e r r o r fig. 9 residual error obtained in the steady state, with the circuit given in fig. 6. on x-axis, parasitic dc bias in 0.4kv ac grid is given, expressed in [mv]. residual error is given on y-axis in [v]. when using the proposed detection method in a manner illustrated in fig. 6, that is, as a sensor, the results are given in fig. 9. these results present the residual error for a range of dc bias voltages, and demonstrate that precision in sensing the dc bias can be maintained with residual errors inferior to 125 v. compared to uac, the measurement precision is better than 1 ppm. 7. conclusions growing number of grid connected converters contributes to an increase of dc bias in ac grids, and this brings the cores of distribution transformers closer to saturation and increases their power losses. the paper provides the analysis of contemporary distribution transformers and probes their sensitivity to the dc bias. it also presents a detailed analysis of the available solutions for detecting and compensating the parasitic dc bias in ac grids, and explored their limits. an active compensation method is proposed, where the grid connected power converter monitors the parasitic dc voltages at the point of common connection, and it provides the dc voltages which correct and suppress the bias. the sensing approach proposed in this paper makes use of saturable ferromagnetic cores and a low cost dsp for signal analysis and processing. proposed algorithm uses distortion of the magnetizing current of a parallel connected saturable core due to the bias. experimental results demonstrate the capability for detecting and compensating the bias voltages far below 1 mv in 0.4 kv grids. for a range of operating conditions, precision in sensing and removing the dc bias can be maintained with residual errors inferior to 140 v. considering the amplitude of superimposed ac voltages, this results brings the measurement precision better than 1 ppm. detection and suppression of parasitic dc voltages in 400 v ac grids 539 references [1] s. n. vukosavić, p. miljanić, "instantaneous feedback in voltage source inverters, a comparative study between nonlinear and linear approach", in conf. rec. 3rd ieee conf. power electronics and elect. drives, london, 1988, pp. 134-137. [2] s. n. vukosavić, m. r. stojić, "reduction of parasitic spectral components of digital space vector modulation by real-time numerical methods", ieee trans. power electronics, vol. 10, no. 1, pp. 94102, feb. 1995. [3] s. vukosavić, "designing energy conversion systems for the next decade", 16th international symposium on power electronics – ee 2011, novi sad, serbia, 26.-28. october, 2011. invited paper ip.2-2 [4] s. n. vukosavić, digital control of electrical drives, new york 10013, usa: springer, 2007, isbn 978-0-387-25985-7, library of congres 2006935130. [5] s. n. vukosavić, m. jones, d. dujić, e. levi, "an improved pwm method for a five-leg inverter supplying two three-phase motors", in ieee int. symp. ind. electronics, cambridge, uk, 2008, pp. 160-165. [6] j. g. kappenman, "transformer dc excitation field test and results", ieee special panel session report, 1989 [7] e. l. harder, "effect of direct current in transformer windings", electric journal, vol. 27, pp. 601 1930 [8] j.a. orr, a.e. emanuel, "on the need for strict second harmonic limits", ieee trans. power delivery, vol. 15, no. 3, pp. 967–971, july 2000. [9] l. gertmar, p. karlsson, o. samuelsson, "on dc injection to ac grids from distributed generation", european conference on power electronics and applications, epe2005, dresden, pp 1-10 [10] y. shi, b. liu, s. duan, "eliminating dc current injection in current-transformer-sensed statcoms", ieee trans. on power electronics, vol. 28, no. 8, pp. 257–265, aug. 2013. [11] "ieee standard for interconnecting distributed resources with electric power systems", ieee standard 1547-2003 [12] m. armstrong, d.j. atkinson, c.m. johnson, "auto-calibrating dc link current sensing technique for transformerless, grid connected, h-bridge inverter systems", ieee trans. on power electronics, vol. 21, no. 5, pp. 1385-1393, sept. 2006. [13] m.m. ponjavic, r.m. djuric, "nonlinear modeling of the self-oscillating fluxgate current sensor", ieee sensor journal, vol. 7, no. 11, pp. 1546-1553, nov. 2007. [14] s.b. lee, t.g. habetler, "an on line stator winding resistance estimation technique for temperature monitoring of line-connected induction machines", ieee trans. on industry applications, vol. 39, no. 3, may/june 2003, pp. 685-694 [15] p.r. price, "geomagnetically induced current effects on transformers", ieee trans. on power delivery, vol. 17, no. 4, oct 2002, pp. 1002-1008 [16] a. ahfock, a.j. hewitt, "dc magnetisation of transformers", iee proc. of electric power applications, vol. 153, no.4, pp. 601-607, july 2006 [17] e.g. tenyenhuis, o. guelph, r.s. girgis, "measured variability of performance parameters of power & distribution transformers", ieee pes transmission and distribution conference and exhibition 21.24. may 2006, pp. 523-528 [18] transformers ge electrical distribution e-catalog, ge industrial solutions 2013 [19] g. buticchi, l. consolini, e. lorenzani, "active filter for removal of the dc current component for single phase power lines", ieee trans. on industrial electronics, vol. 60, no. 10, pp. 4403-4414, oct. 2013 [20] "isolated current and voltage transducers, characteristics, applications, calculations", lem components, 3rd ed., 2004, publication ch 24101 e/us. [21] g. buticchi, e. lorenzani, "detection method of the dc bias in distribution power transformers", ieee trans. on industrial electronics, vol. 60, no. 8, pp. 3539-3549, aug. 2013 [22] g. buticchi, e. lorenzani, "a sensor to detect the dc bias of distribution power transformers", ieee international symposium in diagnostics for electric machines, power electronics & drives (sdemped), 5-8 sept. 2011, pp. 63-70 [23] f. berba, d. atkinson, m. armstrong, "a review of minimisation of output dc current component methods in singlephase grid-connected inverters pv applications", 2nd international symposium on environment-friendly energies and applications 2012, pp. 296-301 [24] g. buticchi, g. franceschini, e. lorenzani, c. tassoni, a. bellini, "a novel current sensing dc offset compensation strategy in transformerless grid connected power converters" ieee energy conversion congress and exposition, ecce 2009, 20-24 sept. 2009, pp. 3889 3894 540 s. n. vukosavic [25] g. buticchi, e. lorenzani, g. franceschini, "a dc offset current compensation strategy in transformerless grid-connected power converters", ieee trans. on power delivery, vol. 26, no. 4, oct. 2011, pp. 2743-2751 [26] g. franceschini, e. lorenzani, g. buticchi, "saturation compensation strategy for grid connected converters based on line frequency transformers", ieee trans. on energy conversion, vol. 27, no. 2, june 2012, pp. 229-237 [27] task force on harmonics modeling and simulation, "modeling devices with nonlinear voltage-current characteristics for harmonic studies", ieee trans. on power delivery, vol. 19, no. 4, oct. 2004, pp. 1802-1822 [28] s. lu, y. liu, j. de la ree, "harmonics generated from a dc biased transformer", ieee trans. on power delivery, vol. 8, no. 2, april 1993, pp. 725-731 [29] x. li, x. wen, p.n. markham, "analysis of nonlinear characteristics for a three-phase, five-limb transformer under dc bias", ieee trans. on power delivery, vol. 25, no. 4, oct. 2010, pp. 2504-2010 [30] x. zhao, j. lu, l. li, z. cheng, "analysis of the dc bias phenomenon by the harmonic balance finiteelement method", ieee trans. on power delivery, vol. 26, no. 1, jan. 2011, pp. 475-485 [31] "hv/lv distribution transformers, trihal cast resin dry type transformers 160 to 2500 kva", france transfo, schneider electric industries sas, april 2005. [32] d. warner and w. jewell, "an investigation of zero order harmonics in power transformers", power delivery, ieee transactions on, vol. 14, no. 3, pp. 972 –977, jul. 1999. [33] p. picher, l. bolduc, a. dutil, and v. pham, "study of the acceptable dc current limit in core-form power transformers", power delivery,ieee transactions on, vol. 12, no. 1, pp. 257 –265, jan. 1997. [34] n. takasu, t. oshi, f. miyawaki, s. saito, and y. fujiwara, "an experimental analysis of dc excitation of transformers by geomagnetically induced currents", power delivery, ieee transactions on, vol. 9, no. 2, pp. 1173 –1182, apr. 1994. [35] s. lu and y. liu, "fem analysis of dc saturation to assess transformer susceptibility to geomagnetically induced currents", power delivery, ieee transactions on, vol. 8, no. 3, pp. 1367 –1376, jul. 1993. [36] s.a. mousavi, g. engdahl, e. agheb, "investigation of gic effects on core losses in single phase power transformers", archives of electrical engineering vol. 60, no. 1, pp. 35-47, 2011. [37] t. mingxing, y. dongsheng, y. hong, "harmonic characteristic analysis of magnetically saturation controlled reactor", telkomnika, vol. 11, no. 8, august 2013, pp. 4214-4221 facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. 43-59 https://doi.org/10.2298/fuee2201043c © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper first principle insight into co-doped mos2 for sensing nh3 and ch4 * bibek chettri1, abinash thapa2, sanat kumar das1, pronita chettri1, bikash sharma2 1department of physics, sikkim manipal institute of technology, majitar, sikkim, india 2department of electronics and communication engineering, sikkim manipal institute of technology, majitar, sikkim, india abstract. in this work we present the atomistic computational study of the adsorption properties of co doped mos2 adsorbed ammonia (nh3) and methane (ch4). the adsorption distance, adsorption energy (ead), charge transfer (qt), bandgap, density of states (dos), projected density of states (pdos), transport properties, sensitivity and recovery time have been reported. the diffusion property of the system was calculated using nudge elastic band (neb) method. the calculated results depict that after suitable doping of co on mos2 monolayer decreases the resistivity of the system and makes it more suitable for application as a sensor. after adsorbing nh3 and ch4, co doped mos2 bandgap, dos and pdos become more enhanced. the adsorption energy calculated for nh3 and ch4 adsorbed co doped mos2 are -0.9 ev and -1.4 ev. the reaction is exothermic and spontaneous. the i-v curve for co doped mos2 for ch4 and nh3 adsorption shows a linear increase in current up to 1.4 v and 2 v, respectively, then a rapid decline in current after increasing a few volts. the co doped mos2 based sensor has a better relative resistance state, indicating that it can be employed as a sensor. the sensitivity for ch4 and nh3 were 124 % and 360.5 %, respectively, at 2 v. with a recovery time of 0.01s, the nh3 system is the fastest. in a high-temperature condition/environment, the co doped mos2 monolayer has the potential to adsorb nh3 and ch4 gas molecules. according to neb, ch4 gas molecules on co doped mos2 has the lowest energy barrier as compared to nh3 gas molecules. our results indicate that adsorbing nh3 and ch4 molecules in the interlayer is an effective method for producing co doped mos2 monolayers for use as spintronics sensor materials. key words: density functional theory, gas sensor, adsorption energy, tmd. received september 1, 2021; received in revised form november 17, 2021 corresponding author: bikash sharma sikkim manipal institute of technology, sikkim, india e-mail: ju.bikash@gmail.com * an earlier version of this paper was presented at the 4th international conference on 2021 devices for integrated circuit (devic 2021), may 19-20, 2021, in kalyani, west bengal, india [1]. b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 44 1. introduction nh3 and ch4 are the common gases which are used for industrial and agricultural purposes [1]. nh3 and ch4 are colourless and tasteless gases that are difficult to identify, and they make people suffocate when its concentration is high in the air [2][3][4]. ch4 reduces the level of oxygen, resulting in headaches, dizziness, increased rate of heartbeat and causing breathlessness in human beings [5][6][7]. therefore, good and sensitive gas sensors for the detection of hazardous gases such as ammonia (nh3) and methane (ch4), is critical for both industrial and civilian purposes [8][9][10]. hence, the demand for gas sensors with high sensitivity, low power consumption and short recovery time has increased [11][12]. in recent years, two-dimensional (2d) materials such as transition metal dichalcogenides (tmds) have gained immense attention. 2d mos2, n-type semiconductor [13] with a bandgap of 1.3-1.8 ev [13][14][15] has been one of the most promising materials for the application of gas sensors due to its superior sensitivity [16][17]. mos2 monolayer has a large surface-to-volume ratio[18], tunable electrical properties [19][20] and magnetic properties [21][22]. much research has been focused on making mos2 more prominent by suitable doping [23][24]. xianxian et al. investigated the adsorption behaviour of rh-doped mos2 monolayer towards so2, sof2 and so2f2 and found the improved performance towards the adsorption of gas molecules as compared to pristine mos2 [25]. guochao et al. verified the excellent sensitivity property of au doped mos2 for sensing c2h6 and c2h2 [26]. likewise, zhen et al. confirmed the center of mos2 as the best possible site for doping fe, co, ni and cu [27]. the doping and codoping on mos2 confirmed the high sensitivity of no and no2 gas by ehab et al. [28]. not only in mos2 but doping has significantly increased the material properties of other nanomaterials [29]. chettri et al. explored the changes in the electronic and magnetic properties of h-bn after suitable doping [30]. y. wang et al. used dft to determine that fe doped mos2 could be used as a spintronic gas sensor to detect no gas molecules [31]. additionally, using dft, y.-h. zhang et al. discovered that transition metal-doped mos2 can be used as a spintronic gas sensor to detect co gas molecules [32]. the gas sensing properties of ptn doped wse2 nanosheet to sf6 breakdown products were explored by linga xu et al., who discovered that incorporating a pt atom greatly increases the sensing properties of wse2 nanosheet [33]. the overall results show the novelty of mos2 after suitable doping. transition metal (tm) doped mos2 are more prominent since the interaction between tm and mos2 is strong [1] and provides numerous free electrons [34][1]. due to the strong orbital hybridization between the atoms and gas molecules, increased sensitivity is observed [35]. in this paper, we explored the adsorption properties of a co doped monolayer (hereafter referred to as co-mos2). the adsorption distance, binding energy, adsorption energy and charge transfer were studied to investigate the most stable configuration of doping of co and adsorption of gas molecules on mos2 monolayer. further, the bandgap, density of states (dos) and projected density of states (pdos) were studied to understand the electronic properties. in the end, the i-v characteristics followed by sensitivity and recovery time was calculated to understand the property of the gas sensor. 45 first principle insight into co-doped mos2 for sensing nh3 and ch4 2. methodology density functional theory [36] computation was carried out in quantumatk [37]. for the exchange-correlation term, the perdew-burke-ernzerh generalised gradient approximation (gga-pbe) function was used [38][39] with troullier-martins type pseudopotential [40]. the non-conserving double-zeta polarized (dzp) was used as the basis set [41] with a 5×5×1 monkhorst-pack k-point grid [42]. the density of states was computed with a higher k-point of 15×15×1 [32]. to understand the magnetic characteristics of the system, we used spinpolarized computations for all calculations [31]. the geometry was relaxed with limited memory broyden-fletcher-goldfarb-shanno (lbfgs) algorithm [43] with a minimum force of 0.05 ev/å [43]. the considered cut-off energy for all the calculations was 100 ha. the inclusion of dispersion correction is described by grimme’s dft-d2 method. pulay mixer algorithm was implemented to control the self-consistent iteration with a tolerance of 0.0002 ry and 100 maximum steps [44]. the 4×4×1 supercell of mos2 monolayer with 15 å vacuum space along z-direction was considered for the calculation with 32 s atoms and 16 mo atoms. the calculated lattice constant of mos2 is 3.8 å, which satisfies the theoretical value [45][46]. the mos2 monolayer was fully relaxed with stillinger-weber (sw) potentials [47]. the binding energy of co-mos2 is calculated using [48], 2 2b mos co co mose e e e −= + − here, emos2 , eco and eco−mos2 represents the total energy of pristine mos2, isolated co and co-mos2 monolayer respectively. the adsorption energy of nh3 and ch4 gas molecules on the co-mos2 is calculated using[48], 2 2ads co mos gas co mos gase e e e− − −= + − here, eco−mos2 , egas and eco−mos2−gas represents the total energy of co-mos2 monolayer, isolated gas molecules and gas molecules adsorbed in co-mos2 monolayer respectively. the total charge transfer qt was obtained using the mulliken method [49]. the qt is calculated by [49], ( ) ( )t absorbed gas isolated gasq q q= − qabsorbed(gas) and qisolated(gas) is the carried charge of gas molecules before and after gas adsorption respectively. we used a two-probe configuration with the left electrode, right electrode, and central region to investigate the system's transport properties [50]. the non equilibrium green’s function (negf) approach, as implemented in quantumatk [51], was used to compute the transport properties of the considered structure. the device supercell was sampled using a 2 d fast fourier transform (fft2d) poisson solver with 1×1×150 k-points for the device simulation [41]. on the electrode faces, the dirichlet boundary condition is used, whereas, on all other faces, the boundary condition is set to periodic. for all device computations, the average fermi level is used as the energy zero parameter in the krylov self-energy calculator. the transmission is derived from the device's extended green's function as follows: †( ) [ ]l rt e tr g g=   b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 46 the greens’ function is given by [52][53] 1( ) [ ( ) ( )]l rg e es h e e −= − − − the current voltage characteristics are now derived using the following equation by integrating the transmission function across a suitable voltage [54]. /2 0 /2 ( ) ( , ) f a f a e ev a a e ev i v g t e v de + − =  the sensitivity of the co-mos2 to absorb urea and methanol was analyzed, obtained from the equation [55] 0 0[( ) / ] 100%s r r r= −  where r0 and r represent the resistance of co-mos2 without and with gas adsorption respectively. in addition, to study the property of gas sensors we estimated the recovery time. the better property of the gas sensor is predicted by a faster recovery time [50]. the recovery time is calculated using the following formula [56]: 1 a b e k t a e −= where a is the apparent factor which is equal to 1012 s-1, kb is the boltzmann constant (8.62 ×10-5 ev/k. ea is the absolute value of adsorption energy and t is the temperature [57]. the diffusion coefficient is calculated using the equation below [58][59]. 𝐷 = 1 6𝑁 lim 𝑡→∞ 𝑑 𝑑𝑡 ∑〈[𝑟𝑖(𝑡) − 𝑟0(𝑡 2)]〉 𝑁 𝑖=1 where 𝑟𝑖(𝑡) denotes the position of atom i at time of t, n is the number of diffusion atoms in the system, 𝑟0(𝑡) is the initial position of atom i. 3. result and discussion the structure of nh3 and ch4 is shown in fig.1 (a) and (b) respectively. the central n atom in nh3 molecules bonds with three h atoms. the bond length of n with three h atoms is 1 å with a bond angle of 108.03º. the central c atom bonds with four h atoms in ch4 molecules with bond length and bond angle of 1.09å and 109.47º respectively. as per the mulliken population analysis, the n and h atoms have a positive charge of 4.941e and 1.019e respectively in nh3. the c and h atoms have the positive charge of 3.776e and 1.056e respectively in ch4 molecules as calculated by the mulliken population analysis. table 1 summarizes the respective values. 47 first principle insight into co-doped mos2 for sensing nh3 and ch4 the most stable structure of the co-doped monolayer was obtained by calculating the binding energy, charge transfer and distance between the atoms for three positions where co atom was kept on the top of s atom (st), top of mo atom (mot) and above the hexagonal ring (hollow) of mos2. the calculated parameters are shown in table 1. the calculated binding energy for the hollow site is 3.97 ev and the total charge transfer is -0.003e. the distance between s and mo atoms is 1.41 å and 3.54 å respectively. the binding energy of the mot site was calculated to be highest, i.e., 4.54 å and the lowest was for the st site i.e., -4.3 å. the charge transfer of mot and st is 0.021e and 0.163e. for the hollow site, the co loses electrons on the hollow site after doping, whereas co gets electrons in mot and st site after doping. from here we can conclude that the mot site has strong binding energy and a shorter distance between s-co and mo-co atoms. the binding is relatively strong, and mot is the most favorable position for the co atom doped on the mos2 monolayer. the most stable structure co on top of mo atom (mot) is shown in fig. 2 (b) and (c). fig. 2 the structure of (a) top view, (b) side view of mos2, (c) top view and (d) side view of comos2 fig. 1 the structure of (a) nh3 and (b) ch4 table 1 parameters for nh3 and ch4 molecules bond distance bond angle qt(e) ch4 c-h: 1.09å c-h: 109.47º c: 3.776 h: 1.056 nh3 n-h: 1 å n-h: 108.03º n: 4.941 h: 1.019 b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 48 table 2 parameters for co-mos2 site eb(ev) qt(e) ds(å) dmo(å) st -4.3 0.163 1.41 3.54 mot 4.5 0.021 1.81 2.58 hollow 3.9 -0.003 2.26 3.09 furtheron, to investigate more about the effect of co on mos2, we calculated the electronic properties like bandgap, the density of states (dos) and projected density of states (pdos) of pristine mos2 monolayer and co-mos2 monolayer. the optimized structure of the mos2 monolayer is shown in fig. 2 (a) and (b). the bond length between mo and s atom is 2.42 å and the bond angle of s-mo-s is 81.63º, which is close to the previous study [60]. the calculated band gap of pristine mos2 is 1.68 ev and after substitution of co atom, bandgap reduces to 0.2 ev. the bandgap value calculated for monolayer mos2 is consistent with earlier literature [25][61][20]. the reduction in bandgap signifies the improvement in the conduction property of the material. it depicts the less energy required for the transition of electrons between the valence band and conduction band. the band structure of pristine mos2 and co-mos2 is shown in fig. 3 (a) and (b) respectively. the dos graph of pristine mos2 is shown in fig. 5 (a). the black and red lines in this diagram represent spin up and down, respectively. the dos distance between the valence band and conduction band separation is much similar to the band structure of fig. 3 the calculated bandgap of (a) pristine mos2, (b) co-mos2, (c) co-mos2 adsorbed ch4 and (d) co-mos2 adsorbed nh3 49 first principle insight into co-doped mos2 for sensing nh3 and ch4 pristine mos2. the dos of pure mos2 is symmetric, with spin up and spin down mirroring each other. this result indicates that mos2 in its purest form is not magnetic. to better understand the electrical property, we looked at the pdos of pristine mos2, as seen in fig. 6(a). the p orbitals of s atoms dominate the upper and lower parts of the valence band. similarly, mo atoms d orbitals dominate the higher and lower parts of the conduction band. in both the upper and lower sides of the conduction band and valence band, there is a significant overlap of the p orbital of the s atom with the d orbital of the mo atoms near the fermi level. the strong hybridization of both atoms was shown by this overlap. fig. 5 (b) and 6 (b) show the dos and pdos graphs for co-mos2, respectively. the co-d orbital contributes to the introduction of impurity states around the fermi level, narrowing the energy bandgap to 0.2 ev. because of the antisymmetric spin-up and spin-down states, the computed pdos shows that the system has now become magnetic. the hybridization around the fermi level of the conduction band is due to the d orbitals of mo atoms and the d orbitals of co atoms, according to the pdos. similarly, p orbitals of s atoms and d orbitals of co atoms cause hybridization near the fermi level of the valence band. both the lower and upper sides of the conduction and valence bands show hybridization. 3.1. adsorption property of ch4 and nh3 on co-mos2 to investigate the most stable position for the adsorption of ch4 molecules on comos2, we used three possible sites. table 3 summarizes the adsorption energy, charge transfer, and adsorption distance calculations. the c atom was placed close to the co atom (c-co), the h atom was placed close to the co atom (h-co), and both the h and c atoms were placed close to the co atom (h-c-co). the adsorption energy for h-co was calculated to be -0.2 ev, and the distance between h-co was calculated to be 1.37. the adsorption energy for c-co was determined to be 0.1 ev. for the h-c-co position, higher adsorption energy of -1.4 ev was calculated. it adsorbs gas molecules at 1.75 for c-co atoms and 1.57 for h-co atoms. because of the position of ch4 that was kept above comos2, there is a slight increase in adsorption distance when compared to the other two positions. furthermore, the charge transfer for all three positions was calculated using mulliken analysis. the total charge transfer qt was negative for all three positions, indicating that ch4 molecules act as an electron donor, transferring an electron to comos2. c-co, h-co, and h-c-co locations have qt values of -0.116e, -0.17e, and -0.076e, respectively. as a result of the aforesaid results, we determined that the h-c-co site is the most stable for ch4 molecule adsorption on a co-mos2 monolayer. furthermore, we investigated the h-c-co site adsorption ability for ch4 molecule adsorption on co-mos2. fig. 4 (c) and 4 (d) depicts the most stable position. at energies of -0.17 ev, -0.18 ev, 0.19 ev, -0.2 ev, and -0.3 ev, a strong peak in the valence band, which is more populated than the conduction band, can be seen. in order to better understand the role of spin density at the fermi level, we show the pdos of ch4 in co-mos2 in fig. 6. (c). the s, p, and d orbitals of the h, c, and co, atoms have high peaks around the fermi level of the upper and lower valence band, respectively. at the lower side of the conduction band, substantial hybridization of the s, p, and d orbitals of h, c, and co atoms can be seen, indicating a large contribution to spin polarization from the ch4 molecule. our findings imply that adsorbing ch4 molecules in the interlayer is a good way to create a co-mos2 monolayer as a spintronics sensor material. when mos2 is doped with co, it becomes a spintronicsbased ch4 sensor. b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 50 fig. 4 the structure of (a) top view, (b) side view of adsorbed nh3, (c) top view and (d) side view of adsorbed ch4 in co-mos2 table 3 parameters for adsorption of nh3 on co-mos2 site ead(ev) qt(e) distance(å) h-co -0.9 -0.173 h-co: 1.23 n-co -0.8 -0.436 n-co: 1.28 h-n-co -0.1 -0.114 h-co: 1.55; n-co: 1.89 table 4 parameters for adsorption of ch4 on co-mos2 site ead(ev) qt(e) distance(å) c-co 0.1 -0.116 c-co: 1.95 h-co -0.2 -0.17 h-co: 1.37 h-c-co -1.4 -0.076 c-co: 1.75; h-co: 1.57 51 first principle insight into co-doped mos2 for sensing nh3 and ch4 fig. 5 density of states of (a) pristine mos2, (b) co-mos2, (c) adsorbed nh3 and (d) adsorbed ch4 on co-mos2 we adopted three types of models to investigate the most stable site for the adsorption of nh3 molecules on a co-mos2 monolayer. the h atom was placed near the co atom (h-co), the n atom was placed near the co atom (n-co) and n and h atoms were placed near the co atom (h-n-co). the calculated parameters of the aforesaid site are presented in table 3. the lowest adsorption energy was calculated for the h-no-co site of -0.1 ev followed by the nco site of -0.8 ev. the highest adsorption energy was obtained for the h-co site of -0.9 ev. when adsorption energy is negative, the adsorption process is exothermic. the adsorption distance of the h-n-co site is 1.55 å for h-co and 1.89 å for the n-co bond, respectively. there was observed some reduction in adsorption distance of n-co i.e., 1.28 å. this might be affected by the alignment of nh3 molecules kept near co-mos2. for the h-co site, the adsorption distance was reduced to 1.23 å indicating the shortest adsorption distance among all the sites. the shorter adsorption distance signifies the adsorption between gas molecules and the co-mos2 monolayer has a strong interaction. in addition, the total charge transfer qt obtained by mulliken analysis was found to be negative for all the sites. the negative qt indicates that nh3 acts as an electron donor and transfers an electron to co-mos2. the corresponding total charge transfer of h-co, n-co and h-n-co sites are -0.173e, -0.436e and -0.114e respectively. due to the shorter adsorption distance, strong adsorption energy and b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 52 negative qt, the h-co site is considered as one of the most stable sites for adsorption of nh3 on co-mos2. furthermore, we calculated the bandgap, dos and pdos to understand the electronic property of the h-co side. the most stable site is shown in fig. 4 (a) and (b). the dos for co-mos2 adsorbed nh3 is shown in fig. 5 (d). in contrast to the cases where nh3 was not adsorbed with co-mos2, we discovered that when nh3 is adsorbed with co-mos2, a few new states near the fermi level appear. furthermore, the magnetic metal property with the spin channel in crossing the fermi level with a bandgap of 0 ev is shown by the spin up and spin down. these conditions could be caused by the presence of the nh3 molecule. the pdos graph in fig. 6 (d) shows the effects of nh3 gas adsorption on co-mos2. the primary peaks of nh3 in co-mos2 are formed by p orbitals of n atoms and are positioned at -0.3 ev and 0 ev, as seen in fig. 6 (d). h atoms orbitals produce states with energies of 4.9 ev, which is far from the fermi level. although the contributions of the p orbitals are close to the fermi level, their peaks are much weaker than those of the s orbitals. the d orbitals of co atoms also produce some impurities around the bottom side of the fermi level. as seen in pdos, the d and p orbitals of the co and n atoms play a key role in enhancing the conductivity of the nh3 adsorbed system. our findings suggest that adsorbing nh3 molecules in the interlayer is a promising technique to make a co-mos2 monolayer that can be used as a spintronics sensor. mos2 becomes a spintronics-based nh3 sensor when it is doped with co. fig. 6 projected density of states of (a) pristine mos2, (b) co-mos2, (c) adsorbed nh3 and (d) adsorbed ch4 on co-mos2 53 first principle insight into co-doped mos2 for sensing nh3 and ch4 3.2. transport property of ch4 and nh3 on co-mos2 the i-v characteristic curve aids in determining the sensing device resistance status. fig.7 (a) and 7 (b) show the device supercells that we used in our calculations (b). fig. 8 depicts the co-mos2 sensor i-v characteristic curve. currents in co-mos2 increase linearly up to 5.8 µa when a bias voltage of 1.4 v is applied. there is a linear degradation in the current as the bias voltage is increased further. similarly, the current value increases linearly with the bias voltage in the ch4 and nh3 configurations. the greatest current value, 9.2 µa, is achieved in the nh3 configuration with a bias voltage of 2 v, as seen in the graph. in addition, with a 1.4 v applied bias voltage, a value of 5.8 µa is achieved in the ch4 configuration. after that, it starts to decrease for both configurations and approaches the present minimum value. table 5 shows the co-mos2 based sensor resistance condition at 2 v. table 5 shows that the co-mos2 without the detecting gas has a high resistance state of 921 ωk at 2 v. the variance of resistance in the nh3 and ch4 configurations at 2 v, i.e., 411 ωk and 200 ωk, is lower. fig. 7 device supercell of (a) nh3 and (b) ch4 on co-mos2 fig. 8 i-v plot for co-mos2 monolayer for adsorption nh3 and ch4 b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 54 table 5 the co-mos2 based sensor resistance state at 2v device voltage (v) resistance (kω) co-mos2 2 921 co-mos2-ch4 2 411 co-mos2-nh3 2 200 3.3. sensitivity, recovery time and diffusion barrier of ch4 and nh3 on co-mos2 it is a well-known fact that a good sensor must have excellent selectivity to detect specific gas molecules. we also computed the sensitivity of ch4 and nh3 configurations for this purpose. to acquire a better understanding of the co-mos2 monolayer sensitivity to targeted molecules at 2 v, we investigated it. the ch4 adsorption sensitivity of co-mos2 was 124 %. the sensitivity of co-mos2 to nh3 adsorption has also been calculated to be 360.5 %. table 6 bandgap, sensitivity, and recovery time of ch4 and nh3 on co-mos2 configuration bandgap sensitivity recovery time co-mos2-ch4 -0.9 124% 1.4×108 s at 350 k 4.7×105 s at 400k 4.7×103 s at 450 k co-mos2-nh3 -0.8 360.5% 9 s at 350 k 0.2 s at 400k 0.1 s at 450 k aside from that, the recovery time of methanol and urea on co-mos2 is examined because reusability is an important indicator for gas sensors. the desorption time for the nh3 arrangement is 9 s at 350 k and 0.2 sec at 400 k. at 450 k, the fastest recovery time was calculated to be 0.01 s for nh3 molecules. at 450 k, the fastest recovery time for ch4 molecules is 4.7×103 sec. at 400 k and 350 k, the recovery times were 4.3×105 sec and 1.4×108 sec, respectively. because the ch4 system has the maximum adsorption energy, the recovery rate is low. according to the computed value of recovery time, as the temperature rises, the recovery time decreases. hence, nh3 and ch4 gas molecules adsorbed co-mos2 monolayer is highly suitable for the application to monitor such gases in the furnace of industry. the gas molecules diffusion characteristics in ch4 and nh3 on co-mos2 are crucial for evaluating response performance, a quick diffusion of gas molecules in sensing material will result in a fast response and short recovery time of the gas sensor. as a result, the energy barriers of gases are calculated using the nudged elastic band (neb) method in quantumatk. the gas molecules diffusion characteristics in co-mos2 are crucial for evaluating response performance, a quick diffusion of gas molecules in sensing material will result in a fast response and short recovery time of the gas sensor [62][63][64]. as a result, the energy barriers of gases are calculated using the nudged elastic band (neb) method in quantumatk. for each of the nine diffusion images, the energy barrier of ch4 and nh3 gas molecules on co-mos2 is computed. the initial path in our neb calculation is image 1, and the final path is image 9. the image dependent pair potential approach with a 55 first principle insight into co-doped mos2 for sensing nh3 and ch4 maximum distance of 1 ǻ was employed to develop the neb image. the energy barrier for all the images is listed in table 7. the diffusion barriers for ch4 throughout the pathways vary from 0.01 ev to 1.69 ev, which is much lower than the nh3 barrier ranges. the diffusion barrier for nh3 varies from 0.89 ev to 5.15 ev along the paths. it means that ch4 gas molecules diffuse considerably more easily than nh3 gas molecules in co-mos2. furthermore, the diffusions of all gases in the co-mos2 monolayer are not isotropic, image 1 to 9 for ch4 gas molecules and image 1 to 2 for nh3 gas molecules correspond to the lowest diffusion barrier, which is due to the inherent lack of electronic and structural symmetry [65]. table 7 diffusion barrier of ch4 and nh3 on co-mos2 diffusion image diffusion barriers (ev) ch4 nh3 1 to 2 0.44 0.89 1 to 3 1.05 2.05 1 to 4 1.15 2.68 1 to 5 1.69 2.57 1 to 6 1.47 1.89 1 to 7 0.9 0.96 1 to 8 0.2 0.99 1 to 9 0.01 5.15 fig. 9 diffusion barrier of (a) ch4 and (b) nh3 on co-mos2 4. conclusion using the dft method we investigated the adsorption distance, adsorption energy, charge transfer, bandgap, dos, pdos, transport property, sensitivity and recovery time of the nh3 and ch4 adsorbed co-mos2 monolayer. the top of the mo atom was calculated to be the stable position for the doping of the co atom in mos2. the top of the mo atom site has the highest binding energy of 4.5 ev. the doping of the co atom in mos2 drastically reduces the bandgap to 1.19 ev from 1.68 ev. this suggests the conduction property of mos2 is enhanced. we found that nh3 and ch4 system has the shorter b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 56 adsorption distance. the adsorption energy of nh3 and ch4 systems are -0.9 ev and -1.4 ev. from the charge transfer, nh3 and ch4 molecules act as electron donors and co-mos2 as an electron acceptor. after the co atom was substituted in the mos2 monolayer, the magnetic property was detected. our device has a linear increase in the current until 1.4 v and 2 v for ch4 and nh3 configurations, respectively, and shows variation in resistance, according to the i-v characteristics computed by negf. furthermore, the co-mos2 monolayer shows exceptional sensitivity for adsorbing ch4 and nh3 molecules, with the sensitivity of 124 % and 360.5 %, respectively. the recovery time suggests that nh3 and ch4 systems are suitable for high-temperature applications. the fastest recovery time was obtained for nh3 with 0.01 s. according to the computed energy barrier, ch4 gas molecules diffuse more easily in co-mos2. therefore, the co-mos2 monolayer is suitable for the adsorption of nh3 and ch4 gas molecules and holds a high application in industrial purposes. as a result, the co-mos2 monolayer appears to be a potential candidate for use as a spintronic sensor to detect nh3 and ch4 molecules. acknowledgement. this work was supported by all india council for technical education (aicte) govt. of india under research promotion scheme for north-east region (rps-ner) vide ref.: file no. 8-139/rifd/rps-ner/policy-1/2018-19. references [1] p. karki, b. chettri, a. thapa, p. chettri and b. sharma, "first principle study of mos2 adsorbed transition metal for sensing nh3 and ch4", in proceedings of the devices for integrated circuit (devic), 2021, pp. 659–661. [2] k. wetchakun, t. samerjai, n. tamaekong, c. liewhiran, c. siriwong, v. kruefu, a. wisitsoraat, a. tuantranont and s. phanichphant, "semiconducting metal oxides as sensors for environmentally hazardous gases", sens. actuators b: chem., vol. 160, no. 1, pp. 580–591, dec. 2011. [3] b. tian, t. huang, j. guo, h. shu, y. wang and j. dai, "gas adsorption on the pristine monolayer gep3 : a first-principles calculation", vacuum, vol. 164, pp. 181–185, june 2019. [4] r. cao, b. zhou, c. jia, x. zhang and z. jiang, "theoretical study of the no, no2, co, so2, and nh3 adsorptions on multi-diameter single-wall mos2 nanotube", j. phys. d. appl. phys., vol. 49, no. 4, p. 045106, dec. 2015. [5] t. abbasi and s.a. abbasi, "“renewable” hydrogen: prospects and challenges", renew. sustain. energy rev., vol. 15, no. 6, pp. 3034–3040, aug. 2011. [6] f. barbir, "fuel cells and hydrogen economy", chem. ind. chem. eng. q., vol. 11, no. 3, pp. 105–113, june 2005. [7] x. cheng, z. shi, n. glass, l. zhang, j. zhang, d. song, z. s. liu, h. wang and j. shen, "a review of pem hydrogen fuel cell contamination: impacts, mechanisms, and mitigation", j. power sources, vol. 165, no. 2, pp. 739–756, mar. 2007. [8] h. luo, y. cao, j. zhou, j. feng, j. cao and h. guo, "adsorption of no2, nh3 on monolayer mos2 doped with al, si, and p: a first-principles study", chem. phys. lett., vol. 643, pp. 27–33, jan. 2016. [9] d. j. late, t. doneux and m. bougouma, "single-layer mose2 based nh3 gas sensor", appl. phys. lett., vol. 105, p. 233103, dec. 2014. [10] n. yamazoe, "toward innovations of gas sensor technology", sensors actuators, b chem., vol. 108, pp. 2–14, july 2005. [11] a. zettl, "extreme oxygen sensitivity of electronic properties of carbon nanotubes", science, vol. 287, no. 5459, pp. 1801–1804, mar. 2000. [12] k. kalantar-zadeh and b. fry, nanotechnology-enabled sensors, springer, 2008. [13] z. huang, x. peng, h. yang, c. he, l. xue, g. hao, c. zhang, w. liu, x. qi and j. zhong, "the structural, electronic and magnetic properties of bi-layered mos2 with transition-metals doped in the interlayer", rsc adv., vol. 3, pp. 12939–12944, june 2013. 57 first principle insight into co-doped mos2 for sensing nh3 and ch4 [14] y. zhang, w. zeng and y. li, "the hydrothermal synthesis of 3d hierarchical porous mos2 microspheres assembled by nanosheets with excellent gas sensing properties", j. alloys compd., vol. 749, pp. 355–362, june 2018. [15] r. wang, b. a. ruzicka, n. kumar, m. z. bellus, h.y. chiu and h. zhao, "ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide", phys. rev. b condens. matter mater. phys., vol. 86, p. 045406, july 2012. [16] s. cui, z. wen, x. huang, j. chang and j. chen, "stabilizing mos2 nanosheets through sno2 nanocrystal decoration for high-performance gas sensing in air", small, vol. 11, no. 19, pp. 2305–2313, may 2015. [17] q. zhou, c. hong, y. yao, s. hussain, l. xu, q. zhang, y. gui and m. wang, "hierarchically mos2 nanospheres assembled from nanosheets for superior co gas-sensing properties", mater. res. bull., vol. 101, pp. 132–139, may 2018. [18] d. zhang, j. wu, p. li and y. cao, "room-temperature so2 gas-sensing properties based on a metal-doped mos2 nanoflower: an experimental and density functional theory investigation", j. mater. chem. a, vol. 5, pp. 20666–20677, sep. 2017. [19] d. j. late, y. k. huang, b. liu, j. acharya, s. n. shirodkar, j. luo, a. yan, d. charles, u. v. waghmare, v. p. dravid and c. n. r. rao, "sensing behavior of atomically thin-layered mos2 transistors", acs nano, vol. 7, no. 6, pp. 4879–4891, may 2013. [20] j. wang, q. zhou, l. xu, x. gao and w. zeng, "gas sensing mechanism of dissolved gases in transformer oil on ag–mos2 monolayer: a dft study", phys. e low-dimensional syst. nanostructures, vol. 118, p. 113947, apr. 2020. [21] a. m. hu, l. l. wang, w. z. xiao, g. xiao and q. y. rong, "electronic structures and magnetic properties in nonmetallic element substituted mos2 monolayer", comput. mater. sci., vol. 107, pp. 72–78, sep. 2015. [22] d. ma, w. ju, t. li, x. zhang, c. he, b. ma, y. tang, z. lu and z. yang, "modulating electronic, magnetic and chemical properties of mos2 monolayer sheets by substitutional doping with transition metals", appl. surf. sci., vol. 364, pp. 181–189, feb. 2016. [23] l. zhang, t. liu, t. li and s. hussain, "a study on monolayer mos2 doping at the s site via the first principle calculations", phys. e low-dimensional syst. nanostructures, vol. 94, pp. 47–52, oct. 2017. [24] h. cui, x. zhang, g. zhang and j. tang, "pd-doped mos2 monolayer: a promising candidate for dga in transformer oil based on dft method", appl. surf. sci., vol. 470, pp. 1035–1042, mar. 2019. [25] x. gui, q. zhou, s. peng, l. xu and w. zeng, "adsorption behavior of rh-doped mos2 monolayer towards so2, sof2, so2f2 based on dft study", phys. e low-dimensional syst. nanostructures, vol. 122, p. 114224, aug. 2020. [26] g. qian, q. peng, d. zou, s. wang, b. yan and q. zhou, "first-principles insight into au-doped mos2 for sensing c2h6 and c2h4," front. mater., vol. 7, p. 22., feb. 2020. [27] z. xiao, w. wu, x. wu and y. zhang, "adsorption of no2 on monolayer mos2 doped with fe, co, and ni, cu: a computational investigation", chem. phys. lett., vol. 755, p. 137768, sep. 2020. [28] e. salih and a.i. ayesh, "first principle study of transition metals codoped mos2 as a gas sensor for the detection of no and no2 gases", phys. e low-dimensional syst. nanostructures, vol. 131, p. 114736, july 2021. [29] m. w. iqbal, e. elahi, a. amin, g. hussain and s. aftab, "chemical doping of transition metal dichalcogenides (tmdcs) based field effect transistors: a review", superlattices microstruct., vol. 137, p. 106350, jan. 2020. [30] b. chettri, p. k. patra, lalmuanchhana, lalhriatzuala, s. verma, b. k. rao, m. l. verma, v. thakur, n. kumar, n. n. hieu and d.p. rai, "induced magnetic states upon electron–hole injection at b and n sites of hexagonal boron nitride bilayer: a density functional theory study", int. j. quantum chem., vol. 121, no. 16, p. e26680, aug. 2021. [31] y. wang, x. shang, x. wang, j. tong and j. xu, "density functional theory calculations of no molecule adsorption on monolayer mos2 doped by fe atom", mod. phys. lett. b, vol. 29, no. 27, p. 1550160, oct. 2015. [32] y. h. zhang, j. l. chen, l. j. yue, h. l. zhang and f. li, "tuning co sensing properties and magnetism of mos2 monolayer through anchoring transition metal dopants", comput. theor. chem., vol. 1104, pp. 12–17, mar. 2017. [33] l. xu, y. gui, w. li, q. li and x. chen, "gas-sensing properties of ptn-doped wse2 to sf6 decomposition products", j. ind. eng. chem., vol. 97, pp. 452–459, may 2021. [34] p. sharma, m. lepcha, b. chettri, a. thapa, p. chettri and b. sharma, "first principle study of mos2 adsorbed transition metal for sensing urea and methanol" , in proceedings of the devices for integrated circuit (devic), 2021, pp. 655–658. b. chettri, a. thapa, s. k. das, p. chettri, b. sharma 58 [35] t. li, y. gui, w. zhao, c. tang and x. dong, "palladium modified mos2 monolayer for adsorption and scavenging of sf6 decomposition products: a dft study", phys. e low-dimensional syst. nanostructures, vol. 123, p. 114178, sep. 2020. [36] s. smidstrup, d. stradi, j. wellendorff, p. a. khomyakov, u. g. vej-hansen, m.-e. lee, t. ghosh, e. jónsson, h. jónsson and k. stokbro, "first-principles green’s-function method for surface calculations: a pseudopotential localized basis set approach", phys. rev. b, vol. 96, p. 195309, nov. 2017. [37] s. smidstrup, t. markussen, p. vancraeyveld, j. wellendorff, j. schneider, t. gunst, b. verstichel, d. stradi, p. a. khomyakov, u. g. vej-hansen, others, "quantumatk: an integrated platform of electronic and atomic-scale modelling tools", j. phys condens. matter., vol. 32, p. 15901, 2020. [38] j. p. perdew, k. burke and m. ernzerhof, "generalized gradient approximation made simple", phys. rev. lett., vol. 77, p. 1396, oct. 1996. [39] j. p. perdew, k. burke and m. ernzerhof, "perdew, burke, and ernzerhof reply", phys. rev. lett., vol. 80, p. 891, jan. 1998. [40] n. troullier and j. l. martins, "efficient pseudopotentials for plane-wave calculations", phys. rev. b, vol. 43, no. 3, pp. 1993–2006, jan. 1991. [41] a. sengupta, "on the junction physics of schottky contact of (10, 10) mx2 (mos2, ws2) nanotube and (10, 10) carbon nanotube (cnt): an atomistic study", appl. phys. a mater. sci. process., vol. 123, p. 227, mar. 2017. [42] h. j. monkhorst and j. d. pack, "special points for brillouin-zone integrations", phys. rev. b, vol. 13, p. 5188, june 1976. [43] j. schneider, j. hamaekers, s. t. chill, s. smidstrup, j. bulin, r. thesen, a. blom and k. stokbro, "atkforcefield: a new generation molecular dynamics software package", model. simul. mater. sci. eng., vol. 25, p. 85007, oct. 2017. [44] p. pulay, "convergence acceleration of iterative sequences. the case of scf iteration", chem. phys. lett., vol. 73, no. 2, pp. 393–398, july 1980. [45] a. ramasubramaniam and d. naveh, "mn-doped monolayer mos2: an atomically thin dilute magnetic semiconductor", phys. rev. b condens. matter mater. phys., vol. 87, p. 195201, may 2013. [46] p. wu, n. yin, p. li, w. cheng and m. huang, "the adsorption and diffusion behavior of noble metal adatoms (pd, pt, cu, ag and au) on a mos2 monolayer: a first-principles study", phys. chem. chem. phys., vol. 19, pp. 20713–20722, aug. 2017. [47] j. w. jiang, h. s. park and t. rabczuk, "molecular dynamics simulations of single-layer molybdenum disulphide (mos2): stillinger-weber parametrization, mechanical properties, and thermal conductivity", j. appl. phys., vol. 114, p. 064307, aug. 2013. [48] y. li, x. zhang, d. chen, s. xiao and j. tang, "adsorption behavior of cof2 and cf4 gas on the mos2 monolayer doped with ni: a first-principles study", appl. surf. sci., vol. 443, pp. 274–279, june 2018. [49] y. chen, x. wang, c. shi, l. li, h. qin and j. hu, "sensing mechanism of sno2(1 1 0) surface to h2: density functional theory calculations", sensors actuators, b chem., vol. 220, pp. 279–287, dec. 2015. [50] d. stradi, u. martinez, a. blom, m. brandbyge and k. stokbro, "general atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium green’s function", phys. rev. b, vol. 93, p. 155302, apr. 2016. [51] m. brandbyge, j.-l. mozos, p. ordejón, j. taylor and k. stokbro, "density-functional method for nonequilibrium electron transport", phys. rev. b, vol. 65, p. 165401, mar. 2002. [52] s. datta and h. van houten, "electronic transport in mesoscopic systems", phys. today, vol. 49, no. 5, p. 70, may 1996. [53] s. datta, "nanoscale device modeling: the green’s function method", superlattices microstruct., vol. 28, no. 4, pp. 253–278, oct. 2000. [54] p. srivastava, v. sharma and n. k. jaiswal, "adsorption of cocl gas molecule on armchair boron nitride nanoribbons for nano sensor applications", microelectron. eng., vol. 146, pp. 62–67, oct. 2015. [55] j. prasongkit, v. shukla, a. grigoriev, r. ahuja, v. amornkitbamrung, "ultrahigh-sensitive gas sensors based on doped phosphorene: a first-principles investigation", appl. surf. sci., vol. 497, p. 143660, dec. 2019. [56] y. h. zhang, y. bin chen, k. g. zhou, c. h. liu, j. zeng, h. l. zhang and y. peng, "improving gas sensing properties of graphene by introducing dopants and defects: a first-principles study", nanotechnol., vol. 20, no. 18, p. 185504, apr. 2009. [57] s. peng, k. cho, p. qi and h. dai, "ab initio study of cnt no2 gas sensor", chem. phys. lett., vol. 387, pp. 271–276, apr. 2004. [58] g. henkelman, b. p. uberuaga and h. jónsson, "climbing image nudged elastic band method for finding saddle points and minimum energy paths", j. chem. phys., vol. 113, p. 9901, nov. 2000. 59 first principle insight into co-doped mos2 for sensing nh3 and ch4 [59] g. henkelman and h. jónsson, "improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points", j. chem. phys., vol. 113, p. 9978, nov. 2000. [60] j. wang, q. zhou, z. lu, y. gui and w. zeng, "adsorption of h2o molecule on tm (au, ag)doped-mos2 monolayer: a first-principles study", phys. e low-dimensional syst. nanostructures, vol. 113, pp. 72–78, sep. 2019. [61] s. ahmad and s. mukherjee, "a comparative study of electronic properties of bulk mos2 and its monolayer using dft technique: application of mechanical strain on mos2 monolayer", graphene, vol. 3, no. 4, pp. 52–59, oct. 2014. [62] a. ghosh and s. b. majumder, "modeling the sensing characteristics of chemi-resistive thin film semiconducting gas sensors", phys. chem. chem. phys., vol. 19, pp. 23431–23443, sep. 2017. [63] h. wang, g. gao, g. wu, h. zhao, w. qi, k. chen, w. zhang and y. li, "fast hydrogen diffusion induced by hydrogen pre-split for gasochromic based optical hydrogen sensors", int. j. hydrogen energy, vol. 44, no. 29, pp. 15665–15676, june 2019. [64] y. qiao, j. wu, x. cheng, y. pang, z. lu, x. lou, q. li, j. zhao, s. yang and y. liu, "construction of robust coupling interface between mos2 and nitrogen doped graphene for high performance sodium ion batteries", j. energy chem., vol. 48, pp. 435–442, sep. 2020. [65] s. mukherjee, a. banwait, s. grixti, n. koratkar and c. v. singh, "adsorption and diffusion of lithium and sodium on defective rhenium disulfide: a first principles study", acs appl. mater. interfaces, vol. 10, no. 6, pp. 5373–5384, jan. 2018. instruction facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 589 600 doi: 10.2298/fuee1404589p covered microstrip line with ground planes of finite width  mirjana t. perić 1 , saša s. ilić 1 , slavoljub r. aleksić 1 , nebojša b. raičević 1 , mirza i. bichurin 2 , alexander s. tatarenko 2 , roman v. petrov 2 1 university of niš, faculty of electronic engineering of niš, serbia 2 novgorod state university, veliky novgorod, russian federation abstract. characteristic parameters of a covered microstrip line with ground planes of finite width are determined using hybrid boundary element method (hbem). this method, developed at the faculty of electronic engineering of niš is based on the combination of equivalent electrodes method (eem) and boundary element method (bem). results for the characteristic impedance of the observed microstrip line are compared with the corresponding ones obtained by the finite element method. key words: characteristic impedance, finite element method (fem), hybrid boundary element method (hbem), microstrip line, perfect electric conductor (pec). 1. introduction over the years, many authors have analyzed microstrip lines with finite width dielectric substrate using numerical and analytical methods [1]-[14]. the variational method [5, 7], the boundary element method/method of moments (bem/mom) [1], [9]-[11], the conformal mapping and the moving perfect electric wall methods [12]-[13], etc. are some of the commonly used procedures for microstrip lines analysis. on the other side, the problem of the finite width microstrip ground plane has not been so often researched, although these forms of microstrips are typical in practice. in [4] and [14]-[15] the microstrip line with finite-width dielectric and ground plane was analyzed. a moving perfect electric wall method (mpew) was applied in [12]. this method is used in combination with the conformal mapping method (cmm). the author obtained simple analytical relations for quasi tem parameters of microstrip lines. the calculation was performed with the assumption that the conductor thickness is zero.  received january 21, 2014; received in revised form september 5, 2014 corresponding author: mirjana t. perić faculty of electronic engineering, a. medvedeva 14, 18000 niš, republic of serbia (e-mail: mirjana.peric@elfak.ni.ac.rs) 590 m. t. perić, s. s. ilić, s. r. aleksić, et al. in [6] the authors present an efficient numerical technique for characteristic parameters determination of multiconductor transmission lines with homogeneous dielectrics. the influence of finite width ground plane was also investigated. the system of integral equations resulting from the method is solved using galerkin’s method with a pulse approximation. the technique applied in this paper is an improvement of the procedure presented in [8], in the sense of better efficiency and accuracy of the obtained results. analysis of structures with ground planes of finite width as well as finite conductor thickness is also possible using the hybrid boundary element method (hbem) [15]. this method is applied for the microstrip characteristic parameters determination in [15] and [16]. in [17] and [18] the symmetrically coupled microstrip lines with finite and infinite width ground plane are analyzed using the hbem. both modes (even and odd) are considered. covered coupled microstrip lines parameters are calculated in [19]. the structure that has not been analyzed using hbem until now is a covered single microstrip line with ground planes of finite width and finite conductor thickness. the analysis of such structure will be presented in this paper. results obtained for the characteristic impedance will be shown in tables and graphically, as equipotential contours. the main assumption in this analysis involves quasi tem propagation in the microstrip line. in order to validate the hbem values obtained for the characteristic impedance, in terms of accuracy, they have been compared with the corresponding ones obtained by the finite element method (fem). that method is very useful for application in software for electromagnetic problems solving, including the microwave analysis. some of this type of software is femm [20] or comsol [21]. the first one will be applied in this paper for results comparison. 2. theoretical background the hbem has been applied, until now, for electromagnetic field determination in the vicinity of cable terminations [22], calculation of magnetic force between permanent magnets as well as for microstrip lines parameters determination [23]. a generalization of the hbem, which is applied in this paper for microstrip lines analysis, was described in detail in [15] and [16]. this method presents a combination of the bem/mom, the equivalent electrodes method (eem) [24] and the point-matching method (pmm). the main idea of the hbem is in discretizing each arbitrarily shaped surface of the perfect electric conductor (pec) electrode as well as an arbitrarily shaped boundary surface between any two dielectric layers. the boundary surfaces are divided into a large number of segments. each of those segments on pec electrode is replaced by equivalent electrodes (ees) placed at their centers. the potential of equivalent electrodes obtained in this manner is the same as the potential of pecs themselves. the segments at any boundary surfaces between the two layers are replaced by discrete equivalent total charges. those charges are placed in the air [15, 16]. the equivalent electrodes are line charges whose radius is determined in [24]. the green’s function for the electric scalar potential of the charges is used. covered microstrip line with ground planes of finite width 591 applying the point-matching method (pmm) for the potential of the perfect electric conductor (pec) electrodes and for the normal component of the electric field at the boundary surface between any two dielectric layers, the system of linear equations is formed. increasing the number of the ees the distances between them becomes smaller. in order to keep stability of the formed system of equations it is necessary that the distances between ees be larger than their radius. the formed quadratic system of linear equations is well-conditioned. the system matrix always has the greatest values at the main diagonal. after solving the system of equations, according to [15], it is possible to calculate the capacitance per unit length of the microstrip line, as well as the characteristic impedance and effective relative permittivity. this method will be described in detail in the following section for characteristic parameters determination of covered microstrip line with the ground planes of finite width and finite conductor thickness. 3. hbem application geometry of the covered microstrip line, with finite width dielectric substrate placed between two ground planes of finite width, is shown in fig. 1. fig. 1 problem geometry the hbem, based on discretization of boundary surfaces between any two dielectric layers and replacement of those segments with total charges per unit length, is applied. it should be mentioned that the free surface charges do not exist on boundary surfaces layer 1 layer 2, so the total surface charges placed between dielectric layers are only surface polarization charges. the equivalent hbem model is shown in fig. 2. 592 m. t. perić, s. s. ilić, s. r. aleksić, et al.  indices “d”, “a” and “t” denote the charges per unit length placed in dielectric (“d”) and air (“a”) as well as total (“t”) charges per unit length, respectively.  mi (i = 1,2) is the number of ees on pecs, with line charges q'd im (m = 1,...,mi), placed in the layer 2;  mj ( j = 3,...,5) is the number of ees on pecs, with line charges q'a jm (m = 1,...,mj), placed in the layer 1;  ni (i = 1,...4) is the number of ees on boundary surfaces layer 1 – layer 2, with line charges q't in, placed in the air (n = 1,...,ni);  ),( dd imim yx , ),( aa imim yx , ),( tt inin yx are the positions of the ees. fig. 2 hbem model the electric scalar potential of the system from fig. 2, is given in eq. (1). 2 2 2dim 0 dim dim 1 1 2 5 2 2a a a 3 1 1 4 2 2t t t 1 1 0 ln ( ) ( ) 2 ln ( ) ( ) 2 ln ( ) ( ) , 2 i i i m i m m im im im i m n in in in i n q x x y y q x x y y q x x y y                                    (1) where 0 is unknown additive constant, which depends on the chosen referent point for the electric scalar potential. the procedure for determining the number of unknowns is the following: in order to avoid placing an arbitrary number of unknowns on each boundary surface, an initial parameter np is introduced. the number of unknowns is determined as covered microstrip line with ground planes of finite width 593 p 1 1 n sh w m   , p2 n sh s m   , p 11 3 2 n sh tw m    , p 22 4 22 n sh ytw m    , where 2 2 sw y   , p 22 5 22 n sh tw m    , p41 n sh h nn   , p32 n sh x nn   , where 2 1ws x   . the total number of unknowns totn , will be denoted by: 5 4 1 1 1tot i i i i n m n       . the electric field is obtained using )grad(e . a relation between the normal component of the electric field and the total surface charges is given with eq. (2). (0 ) 2 t 0 1 2 ˆ ( ) i im im           n e , t t im im im q l     , inn ,,1 , 4,3,2,1i (2) where in̂ ( xnynynxn ˆˆ,ˆˆ,ˆˆ,ˆˆ 4321  ) are unit normal vectors oriented from the layer 2 into layer 1. applying the procedure described in the previous section, the system of linear equation is formed using the pmm for the potential of the perfect electric conductor given in (1) and the pmm for the normal component of the electric field (2). the unknown free charges per unit length on conductors, and total charges per unit length on the boundary surfaces between two dielectric layers is determined after solving the system of equations. in order to satisfy the necessary condition of electrical neutrality of the whole covered microstrip line, equation (3) is added: 2 5 d a 1 1 3 1 0 i im m im im i m i m q q         (3) in that way, a quadratic system of linear equations is formed. the unknown values are free charges of pecs, total charges per unit length at boundary surfaces between dielectric layers, and unknown additive constant 0. the capacitance per unit length of the observed microstrip line is: 31 d1 a 3 1 1 1 mm k k k k c q q u              (4) the characteristic impedance is given in (5) c c0 / eff rz z  , (5) 594 m. t. perić, s. s. ilić, s. r. aleksić, et al. where r eff = c'/c'0 is the effective relative permittivity of the microstrip line, and zc0 is the characteristic impedance of the microstrip line placed in the air. also, with c'0 the capacitance per unit length of the microstrip line without dielectrics (free space) is denoted. in order to validate and compare the obtained results for the characteristic impedance, the software femm [20] is used. 4. numerical results a computer code based on the procedure described in previous section, is written in mathematica [25]. all calculations were performed on computer with dual core intel processor 2.8 ghz and 4 gb of ram. the results convergence and the computation time are shown in table 1. the values of the effective relative permittivity, the characteristic impedance are determined for: r1 = 1, r2 = 3, w1/d = 1.0, t1/w1 = 0.05, w2/d = 3.0, t2/w2 = 0.1, h/d = 0.5 and s/d = 2.0. table 1 convergence of the results and computation time np ntot r eff zc[] t(s) 5 66 1.7008 44.665 0.3 10 98 1.8648 42.234 0.4 15 134 1.7107 44.228 0.7 20 166 1.7825 43.544 1.0 50 376 1.8559 43.328 4.5 75 550 1.8707 43.343 9.6 85 618 1.8744 43.346 12.1 100 722 1.8786 43.349 16.5 125 894 1.8836 43.350 25.2 135 964 1.8846 43.356 29.3 150 1068 1.8866 43.355 36.0 160 1136 1.8877 43.355 41.3 170 1242 1.8887 43.356 49.3 200 1414 1.8908 43.356 64.5 250 1760 1.8935 43.356 100.5 300 2106 1.8953 43.356 143.2 325 2278 1.8963 43.356 171.0 the “computation time” is the time spent for determining the number of unknowns, their positioning, forming a matrix elements, solving the system of equations, the characteristic parameters calculation. most of the calculation time is spent on matrix fill. for example, when the totn =1068, the time for determining the number of unknowns and their positioning is 0.2 s and for the matrix fill 32 s. for solving the system of linear equation is spent 3.3 s and for the capacitance, characteristic impedance and effective dielectric permittivity calculation 0.5 s. from table 1 is evident that a good convergence of the results is achieved in a short computation time. sufficient accuracy is obtained for 1242 unknowns, so there is no need to increase the number of ees. covered microstrip line with ground planes of finite width 595 equipotential contours are shown in fig. 3, for: np = 150, r1 = 1, r2 = 3, w1/d = 1.0, t1/w1 = 0.05, w2/d = 3.0, t2/w2 = 0.1, h/d = 0.5 and s/d = 2.0. fig. 3 equipotential contours in order to verify the obtained hbem values, a comparison of hbem and femm results for the effective dielectric permittivity and the characteristic impedance versus h/d is given in table 2. the discrepancy of these results is less than 0.6 %. it should be mentioned that the classical comparison of results does not make sense here. these methods (hbem and fem) are applied under different conditions. the number of unknowns in the hbem application was about 1100. on the other hand, the corresponding femm model was created with a few thousand finite elements. increasing the number of finite elements, accuracy of femm increases too, so it is possible to “compare” and verify the hbem results. table 2 verification of results for effective dielectric permittivity and characteristic impedance of microstrip line versus h/d for parameters: np = 150, r1 = 1, r2 = 3, w1/d = 1.0, t1/w1 = 0.05, w2/d = 3.0, t2/w2 = 0.1 and s/d =2.0 h/d hbem fem r eff zc[] r eff zc[] 0.2 2.3745 27.897 2.3740 28.056 0.3 2.2007 35.847 2.2089 35.895 0.4 2.0424 40.946 2.0568 40.883 0.5 1.8866 43.355 1.9068 43.208 0.6 1.7286 42.904 1.7530 42.702 0.7 1.5588 39.030 1.5898 38.812 0.8 1.3685 30.462 1.4072 30.320 596 m. t. perić, s. s. ilić, s. r. aleksić, et al. distributions of characteristic impedance versus different parameters are shown in the following figures. fig. 4 shows the influence of ground plane thickness on the characteristic impedance of microstrip line. the input data are: np = 150, r1 = 1, r2 = 3, w1/d = 1.0, t1/w1 = 0.05, w2/d = 3.0 and s/d = 2.0. from this figure it is evident that for corresponding input data, the characteristic impedance does not depend on the ground planes thickness. the characteristic impedance depends on the conductor’s distance from the planes (parameter h/d). increasing this parameter, the characteristic impedance first increases, and then decreases. the maximum value is when the conductor is equidistant from the ground planes. fig. 4 distribution of characteristic impedance versus t2/w2 for different values of parameter h/d distribution of characteristic impedance versus w1/d and s/d is shown in fig. 5. also, there are given values for characteristic impedance of microstrip line with parallel ground planes of infinite width [7]. the influence of dielectric substrate width as well as ground planes width is given in fig. 6. increasing the substrate width, the characteristic impedance decreases. the influence of planes width on characteristic impedance exists, but it can be neglected. increasing the substrate height, the characteristic impedance first increases first, then decreases as the conductor approaches the upper plane, fig. 7. the dielectric permittivity of substrate has also the influence on the characteristic impedance value. increasing the substrate permittivity, the characteristic impedance values decrease. covered microstrip line with ground planes of finite width 597 fig. 5 distribution of characteristic impedance versus s/d for different values of parameter w1/d fig. 6 distribution of characteristic impedance versus s/d for different values of parameter w2/d 598 m. t. perić, s. s. ilić, s. r. aleksić, et al. fig. 7 distribution of characteristic impedance versus h/d for different values of parameter r2 distribution of polarization charges per unit length along boundary surface is shown in fig. 8. fig. 8 distribution of polarization charges per unit length along boundary surface 5. conclusion the aim of this paper is to apply a very efficient hbem, based on a combination of eem and bem, for determining the characteristic impedance of the covered microstrip line with ground planes of finite width. that configuration has not been analyzed so far using hbem. the quasi tem analysis is applied. the main advantage of this method is the possibility to solve arbitrarily shaped, multilayered configuration of microstrip lines, with finite dimension of ground planes and conductor thickness, without any numerical integration. of course, there are other methods that can analyze this structure, but the hbem is simple and accurate procedure. the convergence of the results is good and the computation time is very short. covered microstrip line with ground planes of finite width 599 the analysis of this microstrip was performed for different values of microstrip parameters. the influence of permittivity of layer 2 on the characteristic impedance is evident. also, the results show that for w2/w1 > 2.5 the influence of finite width of ground planes on the characteristic impedance values can be neglected. acknowledgement: this research was partially supported by funding from the serbian ministry of education and science in the frame of the project iii 44004. references [1] k. li, y. fujii, “indirect boundary element method applied to generalized microstrip line analysis with applications to side-proximity effect in mmics”, ieee trans. microwave theory tech., vol. 40, pp. 237–244, 1992, doi: 10.1109/22.120095. [2] chang t. and c. tan, ”analysis of a shielded microstrip line with finite metallization thickness by the boundary element method”, ieee transactions on microwave theory tech., vol. 38, no. 8, pp. 11301132, 1990, doi: 10.1109/22.57340. [3] c.e. smith, r.s. chang, “microstrip transmission line with finite width dielectric”, ieee trans. microwave theory and tech., vol. 28, pp. 90–94, 1980, doi: 10.1109/tmtt.1980.1130015. [4] j. svacina, “new method for analysis of microstrip with finite-width ground plane”, microwave and optical technology letters, vol. 48, no. 2, pp. 396-399, 2006, doi: 10.1002/mop.10672. [5] t. fukuda, t. sugie, k. wakino, y.-d. lin, and t. kitazawa, “variational method of coupled strip lines with an inclined dielectric substrate,” in asia pacific microwave conference – apmc 2009, december 7-10, 2009, pp. 866-869. [6] j. venkataraman, s. n. rao, a. r. đorđević, t. k. sarkar, and y. naiheng, „analysis of arbitrarily oriented microstrip transmission lines in arbitrarily shaped dielectric media over a finite ground plane“, ieee trans. on microwave theory tech., vol. mtt-33, pp. 952–959, oct. 1985, doi: 10.1109/ tmtt.1985.1133155. [7] m. b. baždar, a. r. đorđević, r. f. harrington, t. k. sarkar, „evaluation of quasi-static matrix parameters for multiconductor transmission lines using galerkin’s method“, ieee trans.on microwave theory tech., vol. 42, no. 7, pp. 1223-1228, 1994, doi: 10.1109/22.299760. [8] a. r. đorđević, r. f. harrington, t. k. sarkar, m. b. baždar, matrix parameters for multiconductor transmission lines, software and user’s manual, artech house, boston, 1989. [9] r. f. harrington, field computation by moment methods. new york: macmillan, 1968. [10] t. g. bryant and j. a. weiss, “parameters of microstrip transmission lines and of coupled pairs of microstrip lines”, ieee trans. microwave theory tech., vol. mmt-16, pp. 1021-1027, dec. 1968, doi: 10.1109/tmtt.1968.1126858. [11] a. farrar and a. t. adams, “characteristic impedance of microstrip by the method of moments”, ieee trans. microwave theory tech., vol. mmt-18, pp. 65-66, jan. 1970, doi: 10.1109/tmtt.1970.1127146. [12] j. svacina, “new method for analysis of microstrip with finite-width ground plane”, microwave and optical technology letters, vol. 48, no. 2, pp. 396-399, feb. 2006, doi: 10.1002/mop.21361. [13] c.e. smith, and r.s. chang, “microstrip transmission line with finite width dielectric”, ieee trans. microwave theory tech., vol. 28, pp. 90–94, feb. 1980, doi: 10.1109/tmtt.1980.1130015. [14] c.e. smith, r.s. chang, “microstrip transmission line with finite width dielectric and ground plane” , ieee trans. microwave theory tech., vol. 33, pp. 835–839, 1985, doi: 10.1109/tmtt.1985.1133142. [15] s. ilić, m. perić, s. aleksić, n. raičević, “hybrid boundary element method and quasi tem analysis of 2d transmission lines – generalization”, electromagnetics, vol. 33, no. 4, pp. 292-310, 2013, doi: 10.1080/02726343.2013.777319. [16] m. perić, s. ilić, s. aleksić, n. raičević, “application of hybrid boundary element method to 2d microstrip lines analysis”, int. journal of applied electromagnetics and mechanics, vol. 42, no. 2, pp. 179-190, 2013, doi 10.3233/jae-131655. [17] s. ilić, m. perić, s. aleksić, n. raičević, “quasi tem analysis of 2d symmetrically coupled strip lines with finite grounded plane using hbem”, in 15th international igte symposium, graz, austria, pp. 7377, 2012. 600 m. t. perić, s. s. ilić, s. r. aleksić, et al. [18] s. ilić, m. perić, s. aleksić, n. raičević, “quasi tem analysis of 2d symmetrically coupled strip lines with infinite grounded plane using hbem”, in xvii-th international symposium on electrical apparatus and technologies siela 2012, bourgas, bulgaria, pp.147-155, 2012. [19] s. ilić, m. perić, s. aleksić, n. raičević, “covered coupled microstrip lines with ground planes of finite width”, in 11th international conference on telecommunications in modern satellite, cable and broadcasting services – telsiks 2013, niš, serbia, pp. 37-40, 2013. [20] d. meeker, femm 4.2, available: http://www.femm.info/wiki/download. download date: 1 oct 2011. [21] comsol multiphysics, available: http://www.comsol.com [22] n. b. raičević, s. s. ilić, s. r. aleksić, “application of new hybrid boundary element method on the cable terminations”, in 14th international igte'10 symposium, graz, austria, pp. 56-61, 2010. [23] ana n. vučković, nebojša b. raičević, mirjana t. perić and slavoljub aleksić, “magnetic force calculation of permanent magnet systems using hybrid boundary element method”, in sixteenth biennial ieee conference on electromagnetic field computation cefc 2014, annecy, france, 2014. (accepted for presentation) [24] d. m. veličković, “equivalent electrodes method”, scientific review, vol. 21–22, pp. 207–248, 1996. [25] mathematica 5.0, wolfram research inc., 1988-2003. instruction facta universitatis series: electronics and energetics vol. 28, no 2, june 2015, pp. 287 296 doi: 10.2298/fuee1502287k performance analysis of a flexible polyimide based device for displacement sensing  milica g. kisić 1 , nelu v. blaž 1 , kalman b. babković 1 , andrea marić 1 , goran j. radosavljević 2 , ljiljana d. živanov 1 , mirjana s. damnjanović 1 1 faculty of technical sciences, university of novi sad, novi sad, serbia 2 institute for sensor and actuator systems, vienna university of technology, vienna, austria abstract. in this work, two variations of the displacement sensor, based on the heterogeneous integration process of traditional fabrication technologies pcb (printed circuit board) and ltcc (low temperature co-fired technology) with a flexible polyimide foil are presented. the proposed sensor uses the coil as an essential part, spacer and a polyimide foil as a flexible membrane with a piece of ferrite attached to it. with the displacement of the polyimide foil, the ferrite gets closer to the coil causing an increase in its inductance and a decrease of the resonant frequency of the system (coil, ferrite and antenna). simulation results showed that sensors with equal outer dimensions but different internal structures exhibit different performances. two prototypes of the sensor with different ferrite dimensions are designed, fabricated and characterized. finally, their performances are compared. key words: displacement measurement, wireless sensor, heterogeneous integration 1. introduction displacement measurement is of a profound importance in a wide range of applications, such as industrial systems, portable electronic devices, robots, biomedical devices, intelligent instruments, performance evaluation, etc. the high demand for displacement sensors is due to their application for measuring the position and movement of objects, for nondestructive evaluation of deformation, alignment and calibration of position as well as measuring other physical quantities which can first be converted into movement such as pressure, force, acceleration, etc. different types of displacement measuring methods and sensors have been developed: eddy-current, optical, resistive, capacitive, inductive, etc. eddy current sensors are resistant to dirt, dust, humidity, oil or dielectric material in the measuring gap and have been proven reliable in a wide range of temperatures. however, non-contact eddy current sensors have one problem, inhomogeneity (electrical run out) that affects their accuracy received september 18, 2014; received in revised form january 5, 2015 corresponding author: milica g. kisić faculty of technical sciences, university of novi sad, trg dositeja obradovića 6, 21000 novi sad, serbia (e-mail: mkisic@uns.ac.rs) 288 m. g. kisić, n. v. blaž, k. b. babković, et al. and applications [1]. optical, as well as michelsons interferometers, are one of the popular displacement measurement methods because of their high precision [2, 3]. these sensors are very sensitive to environmental perturbations and suffer from deterioration of signal to noise ratio and disappearance of the desired signal and deviations in the optical path length. interferometers which are based on the fringe counting method have high resolution and stability, but their precision is dependent on the wavelength of the light [4]. they are bulky and quite expensive due to their sophisticated structure and their working performance is easily affected by the environment. displacement sensors with giant magnetoresistance (gmr) elements have their position resolution limited by excessively low signal to noise ratio [5]. capacitive sensors are the best regarding accuracy/resolution and the applicability for small targets. they show a fringe effect around the edge of the patterned electrode and drift in the signal caused by various parameters, such as thermal effect, stage coupling, random wave noise, external electric waves, etc. which is hard to control [6-9]. in order to improve signal conditioning and effective noise reduction for better accuracy and resolution, complex electronic circuits are needed [10-12]. inductive displacement sensors with complex structures of two sensor elements are presented in [13]. piezoresistive sensors are important and widely utilized class of devices in mechanical sensing. displacement or force sensors with sidewall embedded piezoresistors, piezoresistive microcantilevers and self-detection onboard electronic systems are designed and manufactured [14, 15]. a piezoresistive cantilever based on both the lateral and the vertical bending for two-dimensional detection is presented [16]. in [17] is proposed the sensor based on a seal cavity made by sacrificial layer, a deposition of polysilicon nanofilm acts as piezoresistors on the diaphragm. there is an increasingly wide interest in polymeric foils and their application in the field of sensor technology. the various types of sensors applying polymeric foils can be realized for different purposes and unique possibilities. flexible polymeric foils offer a lot of advantages in making sensors: they are very low-cost, thin, large area, lightweight, flexible, conformable, transparent, wearable, foldable, stretchable and produced on a large scale. polymer substrates are very flexible and can be bended in a very small radius of curvature. most previous sensors are silicon-based which is rigid for flexible, bendable applications and to cover continuous, contoured, conformal surfaces. in order to achieve mechanical sensors which can fulfill that application and can sustain sudden impact or large deformation, flexible substrates can be used. in order to develop strain sensors and multiplexed arrays with good performances, but lightweight construction, mechanical flexibility and robustness, sensors which combined silicon sensing elements and thin plastic substrates are developed [18]. different types of sensors for mechanical sensing with flexible substrates of various polymer-based materials, such as polyester, parylene, polyimide (pi) or polydimethylsiloxane (pdms) were proposed [19-25]. presented sensors are used for sensing the tactile, bending, interface pressure between implanted cuff and nerve tissue, normal and shear loads, application to robotics, medicine and industry. an overall mechanical flexibility, elasticity and biocompatibility of the sensor are obtained by integrating polymeric substrates. performance analysis of a flexible polyimide based device for displacement sensing 289 one of the simplest sensor structures having a coil and a ferrite object in close proximity have been reported for monitoring changing environmental parameters such as pressure, displacement and force [26-28]. in our previous paper [29], an inductive displacement sensor in discrete technology was presented. traditional fabrication techniques, pcb (printed circuit board) and ltcc (low temperature co-fired technology), are combined with a polyimide foil to create a displacement sensing structure. presented sensor uses non-contact wireless displacement measurement so it does not require proper, smooth, good contacts, vias and metal lines on the coil, which can deforms the coil structure and yield to the parasitic elements which should be eliminated from the actual parameters. commercially available polyimide is used as a membrane so the complex fabrication process that includes photolithography, spinning, curing and etching for membrane fabrication is avoided. the sensor utilizes the variation of the coil’s inductance and accordingly the shift of the resonant frequency of the antenna-sensor system to detect the desired parameter displacement. in this work, two variations of the sensor with different ferrite dimensions are designed and examined, in order to investigate their performance. such wireless displacement sensors applying the heterogeneous integration process are fabricated and tested. finally, their performances are compared. 2. design of displacement sensor with polyimide membrane the integrated displacement sensor consists of a coil, a small cylindrical ferrite plate, a suitable spacer and finally a flexible membrane. the exploded 3d view of the sensor and its cross section and an antenna coil are presented in fig. 1. the manufacturing process of the sensor consists of two stages, the fabrication of the components and the packing process. pcb technology is used for the coil fabrication because pcb circuits are planar, easy to mount, reliable and cheap. the coil is designed as a square spiral type with outer dimensions of 19 mm, 25 turns, and conductive lines width and distance between the lines both equal to 150 µm. as the membrane, a polyimide foil of 125 µm thickness and young’s modulus of 3 gpa [30] is used. polyimide substrate shows elastic-plastic behavior and tends to creep so may exhibit parametric drift, but it can take large strains before fracture and has an elastic modulus smaller by nearly a factor of 70 compared with the silicon and the metal foils [31, 32]. for used polyimide foil, considerable smaller load is needed for the same deflection compared with other membranes. the ferrite disk consists of 12 layers of ltcc ferrite tape (esl 40012, thickness of green tape: ~70 µm) sintered at 1100 °c in order to achieve the highest permeability [33]. the thickness of the ferrite disk after sintering is 0.66 mm. several pcb fr4 plates of different types and thicknesses (with overall thickness of 2.6 mm and a milled hole of a 16 mm radius in the center) are used as a spacer, in order to provide spacing of 1.2 mm between the ferrite and the coil (since the thickness of the membrane, the ferrite and the glue is 1.4 mm). 290 m. g. kisić, n. v. blaž, k. b. babković, et al. a) b) fig. 1 a) exploded 3d view of the sensor and b) cross section of the sensor and the antenna coil 3. calculation of a sensing mechanism the resonant frequency of the coil can be expressed as sscl f 2 1 0  , (1) where ls and cs are the inductance and capacitance of the sensor coil, respectively. it can be seen that any variation in the coil inductance changes the resonant frequency. displacement can be detected in a simple and precise way without additional mechanical contact on the sensor. wireless measurements of the sensor regard the readout of the changes of the resonant frequency of the sensor-antenna system. measurements are done using an external surrounding coil–antenna. the equivalent circuit model of the sensor-antenna system is presented in fig. 2. the impedance of the sensor-antenna system can be determined as [34] performance analysis of a flexible polyimide based device for displacement sensing 291 2( ) ( ) 1 a a s s s m z r j l r j l c                , (2) where la and ra represent the inductance and resistance of the antenna, respectively, rs is resistance of the sensor coil, and m is the mutual inductance between the antenna coil and the sensor coil. the magnitude of the impedance’s phase dip at the resonant frequency 0 is           s s r lk 0 2 1tan   , (3) where k is the coupling coefficient of the antenna coil and the sensor coil. using wheeler’s method [35], the inductance of the sensor coil is calculated, ls = 7.8 μh. a planar magnetic structure in close proximity to the coil yields high enhancement of the inductance values. in order to investigate in which manner dimensions of the ferrite influence the sensor coil inductance, simulations of the inductance for different ferrite dimensions and distances from the coil are performed using cst (computer simulation technology) microwave studio [36]. the simulated inductance of the coil for different ferrite radii (r = 6 mm and r = 9.5 mm) and distances between the ferrite and the coil, d, is presented in fig. 3. as can be seen, a larger ferrite yields higher inductance value and higher inductance change rate with distance (2.07 µh) compared to the smaller ferrite (0.66 µh) as the consequence of greater intersects of the magnetic field between the coil and the ferrite. fig. 3 simulated inductance changes for different ferrite radii and distances between the ferrite and the coil fig. 2 the equivalent circuit model of the sensor-antenna system 292 m. g. kisić, n. v. blaž, k. b. babković, et al. 4. experimental results and discussion the measurement setup is shown in fig. 4. the fabricated sensor is mounted and sealed on a test fixture and an antenna coil is placed around the sensor. a mts (manual translation stage) is positioned exactly above the sensor membrane to precisely control the polyimide membrane deflection by direct contact to the sensor. the antenna is connected to the impedance analyzer hp4191a and the amplitude of the impedance and phase dip of the system (antenna-sensor) are measured. a) b) c) fig. 4 a) deflection of the sensor’s membrane by application of the mts, b) the setup for the wireless measurements of the displacement sensors and c) the photograph of the mounted and fixed system connected to the impedance analyzer to test the functionality of the displacement sensor performance analysis of a flexible polyimide based device for displacement sensing 293 the measured phase shift without any displacement of the membrane for two different ferrite dimensions is shown in fig. 5. to wirelessly measure resonant frequency of the sensor, the resonant frequency of the antenna should be far enough from the sensor’s resonant frequency. the sensor with the smaller ferrite has smaller inductance value, and consequently resonant frequency of the system i (sensor coil, smaller ferrite r = 6 mm, antenna) is higher compared to the resonant frequency of the system ii (sensor coil, larger ferrite r = 9.5 mm, antenna) 71.7 mhz vs. 64.7 mhz, respectively. a square spiral winding is used as the antenna with a resonant frequency of 145 mhz, which is sufficiently far away from measured resonant frequencies of both sensor systems. fig. 5 measured phase of the impedance of the antenna and the systems with two different ferrites fig. 6 wirelessly monitored changes of the amplitude and the phase dip of the impedance of the system i (smaller ferrite) for different displacement (in µm) 294 m. g. kisić, n. v. blaž, k. b. babković, et al. fig. 7 wirelessly monitored changes of the amplitude and the phase dip of the impedance of the system ii (larger ferrite) for different displacements (in µm) the measured data for two investigated systems are shown in figs 6 and 7. resonant frequencies are determined from the minimum point of the phase dip for displacement variations up to 1.2 mm. the higher the displacement, the closer the ferrite core is to the sensor coil, causing the increase in the inductance and consequently decreasing the resonant frequency. resonant frequency characteristics of both systems are shown in fig. 8. in the measurable displacement range, change of the resonant frequency of the system ii (with the larger ferrite) is 10.5 mhz and sensitivity is 8.75 khz/µm. compared to the system ii, measured change of the resonant frequency and sensitivity of the system i (with the smaller ferrite) are smaller (3.5 mhz and 2.92 khz/µm, respectively). an increase in the overlapping area between the coil and the ferrite, results in greater change in the inductance, hence the greater decrease in the system’s resonant frequency. fig. 8 resonant frequency characteristics of systems with two different ferrite radii performance analysis of a flexible polyimide based device for displacement sensing 295 5. conclusion in our previous work [29], application of polyimide foil as a membrane in displacement sensor was investigated. the principle of operation of the presented sensor is based on the deflection of a membrane, hence approaching the ferrite closer to the sensor coil and the subsequent measurement of the phase-dip of the sensor-antenna system. using sensor structures with the same outer dimensions but larger ferrites yields a 3 times greater change in the resonant frequency (10.5 mhz vs. 3.5 mhz) and sensitivity (8.75 khz/µm vs. 2.92 khz/µm) of the system for the same amount of displacement. therefore, in order to enhance the performance of the sensor, the dimensions of the coil and the ferrite have to be appropriately selected. future work will be directed towards optimization of the coil layouts and the development of new designs with different technologies in order to fabricate sensors with the coil fabricated on the membrane. acknowledgement. this work was supported in part by the ministry of education, science and technological development, republic of serbia, on project number tr-32016 and iii45021. references [1] g. y. tian, z. x. zhao and r. w. baines, "the research of inhomogeneity in eddy current sensors", sensors and actuators a, vol. 69, pp. 148-151, 1998. [2] d. hofstetter, h. p. zappe and r. dandliker, "optical displacement measurement with gaas/algaasbased monolithically integrated michelson interferometers", journal lightwave technology, vol. 15, no. 4, pp. 663 – 670, april 1997. [3] s. j. lee, y. melikhov, c. m. park, h. hauser and d. c. jiles, "analysis of a remote magneto-optic linear displacement sensor using a jones matrix approach", ieee transaction on magnetics, vol. 42, no. 10, pp. 3273 – 3275, october 2006. [4] a. bergamin, g. cavagnero and g. mana, "a displacement and angle interferometer with subatomic resolution", review of scientific instruments, vol. 64, pp. 3076-3081, august 1993. [5] m. m. miller, p. lubitz, g. a. prinz, j. j. krebs and a. s. edelstein, "development of a high precision absolute linear displacement sensor utilizing gmr spin-valves", ieee transaction on magnetics, vol. 33, no. 5, pp. 33883390, september 1997. [6] a. arkadan, s. subramaniam, sivanesan and o. douedari, "design optimization of a capacitive transducer for displacement measurement", ieee transaction on magnetics, vol. 35, pp. 1869 1872, may 1999. [7] m. hirasawa, m. nakamura and m. kanno, "optimum form of capacitive transducer for displacement measurement", ieee transaction on instrumentation and measurement, vol. 3, pp. 276 – 280, december 1984. [8] m. kim and w. moon, "a new linear encoder-like capacitive displacement sensor", measurement, vol. 39, pp. 481–489, july 2006. [9] m. kim, w. moon, e. yoon and k r lee, "a new capacitive displacement sensor with high accuracy and long-range", sensors and actuators a, vol. 130-131, pp. 135–141, august 2006. [10] d. kang, w. lee and w. moon, "a technique for drift compensation of an area-varying capacitive displacement sensor for nano-metrology", in proceedings of the eurosensors xxiv, procedia engineering 5, september 5-8, 2010, linz, austria, pp. 412–415. [11] f. zhu, j. w. spronck and w. c. heerens, "a simple capacitive displacement sensor", sensor and actuator a, vol. 25, issue 27, pp. 265–269, 1991. [12] g. gao, y. wang, s. yan and y. han, "design of capacitive displacement sensor and measuring algorithm based on modulated differential pulse width", journal of chemical and pharmaceutical research, vol. 6, pp. 704-711, 2014. 296 m. g. kisić, n. v. blaž, k. b. babković, et al. [13] m. s. damnjanovic, l. d. zivanov, l. f. nagy, s. m. djuric and b. n. biberdzic, "a novel approach to extending the linearity range of displacement inductive sensor", ieee transaction on magnetics, vol. 44, no. 11, pp. 41234126, november 2008. [14] v. stavrov, e. tomerov, g. stavreva, c. hardalov and a. shulev, "lateral displacement mems sensor", in proceedings of the eurosensors xxiv, procedia engineering, vol. 00, september 5-8, 2010, linz, austria, 2009, pp. 1-4. [15] f. mathieu, d. saya, c. bergaud and l. nicu, "parallel detection of si-based microcantilevers resonant frequencies using piezoresistive signals downmixing scheme", ieee sensors journal, vol. 7, no. 2, pp. 172-178, february 2007. [16] t. c. duc, j. f. creemer and p. m. sarro, "piezoresistive cantilever beam for force sensing in two dimensions", ieee sensors journal, vol. 7, no. 1, pp. 96-106, january 2007. [17] x. yu, y. tang, h. zhang, t. li and w. wang, "design of high-sensitivity cantilever and its monolithic integration with cmos circuits", ieee sensors journal, vol. 7, no. 4, pp. 489495, april 2007. [18] s. m. won, h.-s. kim, n. lu, d.-g. kim, c. d. solar, t. duenas, a. ameen and j. a. rogers, "piezoresistive strain sensors and multiplexed arrays using assemblies of single-crystalline silicon nanoribbons on plastic substrates", ieee transactions on electron devices, vol. 58, no. 11, pp. 40744078, november 2011. [19] m-y cheng, x-h huang, c-w ma and y-j yang, "a flexible capacitive tactile sensing array with floating electrodes", journal of micromechanics and microengineering, vol. 19, pp. 1-10, 2009. [20] c-chu chiang, c-c k. lin and m-s ju, "an implantable capacitive pressure sensor for biomedical applications", sensors and actuators a, vol. 134, pp. 382–388, 2007. [21] h-j kwon, j-h kim and w-c choi, "development of a flexible three-axial tactile sensor array for a robotic finger", microsystem technologies, vol. 17, pp. 1721–1726, 2011. [22] j. engel, j. chen and chang liu, "development of polyimide flexible tactile sensor skin", journal of micromechanics and microengineering, vol. 13, pp. 359–366, 2003. [23] y-j yang, m-y cheng and x-h huang, "fabrication method of a flexible capacitive pressure sensor", us patent 8,250,926 b2, august 28, 2012. [24] h-w jang, "flexible display device having touch and bending sensing function", us patent 2014/0204285 a1, july 24, 2014. [25] k-h shin, c-y moon and y-j kim, "flexible device, flexible pressure sensor", us patent 8,107,248 b2, january 31, 2012. [26] a. baldi, w. choi and b. ziaie, "a self-resonant frequency-modulated micromachined passive pressure transensor", ieee sensors journal, vol. 3, pp. 728733, december 2003. [27] n. misron, l. q. ying, r. n. firdaus, n. abdullah, n. f. mailah and hiroyuki wakiwaka, "effect of inductive coil shape on sensing performance of linear displacement sensor using thin inductive coil and pattern guide", sensors, vol. 11, pp. 10522-10533, november 2011. [28] m. g. kisic, n. v. blaz, k. b. babkovic, a. m. maric, g. j. radosavljevic, l. d. zivanov and m. s. damnjanovic, "passive wireless sensor for force measurements", ieee transactions on magnetics, vol. 51, issue 1, doi 10.1109/tmag.2014.2359334, in press. [29] m. g. kisić, n. v. blaž, b. dakić, a. marić, g. j. radosavljević, lj. d. živanov and m. s. damnjanović, "a flexible polyimide based device for displacement sensing", in proceedings of the 29th international conference on microelectronics (miel 2014), belgrade, serbia, 12-15 may, 2014, pp. 1-4. [30] gts flexible materials ltd, available at: http://www.gtsflexible.co.uk. [31] n. lobontiu and e. garcia, mechanics of microelectromechanical systems. springer science & business media, 2005, chapter 6, pp. 364. [32] a. k. kaw, mechanics of composite materials. second edition, crc press, technology & engineering, november 2005, chapter 1, pp. 6. [33] n. blaž, a. marić, i. atassi, g. radosavljević, lj. živanov, h. homolka and w. smetana, "complex permeability changes of ferritic ltcc samples with variation of sintering temperatures", ieee transaction on magnetics, vol. 48, pp. 1563-1566, 2012. [34] o. akar, t. akin and k. najafi, "a wireless batch sealed absolute capacitive pressure sensor", sensors and actuators a, vol. 95, pp. 29–38, 2001. [35] s. s. mohan, m. m. hershenson, s. p. boyd and t. h. lee, "simple accurate expressions for planar spiral inductances", ieee journal of solid-state circuits, vol. 34, pp. 14191424, 1999. [36] cst microwave studio suite, computer simulation technology, www.cst.com. facta universitatis series: electronics and energetics vol. 34, no 3, september 2021, pp. 381-392 https://doi.org/10.2298/fuee2103381t © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper damping analysis to improve the performance of shunt capacitive rf mems switch lakshmi narayana thalluri1, k v v kumar2, konari raja sekhar3, n bhushana babu d3, s s kiran4, koushik guha5 1department of ece, andhra loyola institute of engineering and technology, vijayawada, andhra pradesh, india 2department of ece, universal college of engineering and technology, perecharla, a p, india 3department of ece, n s raju institute of technology (autonomous),sontyam, a p, india 4department of ece, lendi institute of engineering and technology, visakhapatnam, a p, india 5national mems design center, department of ece, national institute of technology, silchar, assam, india abstract. this paper describes the significance of the iterative approach and the structure damping analysis which help to get better the performance and validation of shunt capacitive rf mems switch. the micro-cantilever based electrostatic ally actuated shunt capacitive rf mems switch is designed and after multiple iterations on cantilever structure a modification of the structure is obtained that requires low actuation voltage of 7.3 v for 3 µm deformation. to validate the structure we have performed the damping analysis for each iteration. the low actuation voltage is a consequence of identifying the critical membrane thickness of 0.7 µm, and incorporating two slots and holes into the membrane. the holes to the membrane help in stress distribution. we performed the eigen frequency analysis of the membrane. the rf mems switch is micro machined on a cpw transmission line with gapstrip-gap (g-s-g) of 85 µm 70 µm 85 µm. the switch rf isolation properties are analyzed with high dielectric constant thin films i.e., aln, gaas, and hfo2. for all the dielectric thin films the rf mems switch shows a high isolation of -63.2 db, but there is shift in the radio frequency. because of presence of the holes in the membrane the switch exhibits a very low insertion loss of -0.12 db. key words: vibration analysis, rf mems switches, material science, fem tools analysis. received march 22, 2021; received in revised form june 06, 2021 corresponding author: lakshmi narayana thalluri department of ece, andhra loyola institute of engineering and technology, vijayawada, andhra pradesh, india e-mail: drtln9@gmail.com * an earlier version of this paper was presented at the international conference on micr/nano electronics devices, circuits and systems (mndcs-2021), 30-31 january, 2021, india [1]. 382 l. n. thalluri, k v v kumar, k. r. sekhar, n b babu d.3, s s kiran, k. guha 1. introduction rf mems switches are becoming prominent because of their low power consumption and high linearity [1]. shunt capacitive rf mems switches are extremely useful in rf mems technology which has great potential in the design of reconfigurable antennas [2]. the frequency range of 1.5 15 ghz is the major band which will cover significant wireless applications like gps, gsm, wi-fi, wi-max, and umts [3]. potential major research challenges of electrostatically actuated rf mems switches are how to reduce the required actuation voltage, improve their switching time and reliability. a proper iterative study helps to obtain better mechanical, electrical and rf properties of the switch. the cantilever-based, serpentine, fixed-fixed, folded membrane structures are popular in the design of mems devices. among these, the cantilever based devices offer low actuation voltage and better switching properties [4-6]. but, there is still room to improve the cantilever performance by the iterative analysis. material science also helps to choose the most suitable thin film for the substrate, the transmission line and the membrane [7]. 2. related work in the early decades, several researchers advanced the research on rf mems switches. electrostatic, magneto static, piezo resistive, and thermal are the popular actuation techniques. among these, electrostatic actuation offers major advantages [8]. however, there are still a few potential research challenges in electrostatically actuated rf mems switches, like improving the reliability, reducing the actuation voltage, and improving the switching time [9, 10]. the prior iterative analysis obviously helps to improve the performance of the rf mems switches. material science has a prominent role in the selection of thin films for the transmission lines and the membranes. silicon or glass materials are generally used for the substrate [11]. the cpw and the membranes are micro machined in au, al, cu, and ti. for capacitive mems switches the dielectric material used plays an important role in improving the rf properties [12]. the rf properties i.e., insertion and isolation losses of the switch truly rely on the capacitance ratio. the ratio of downstate capacitance to upstate capacitance is known as the capacitance ratio [13]. 3. mathematical analysis the rectangular cantilever critical stress analysis is indispensable because it primarily determines the switch reliability. the critical stress (σc) in terms of cantilever dimensions and the young's modulus (e) can be expresses as [14], 2 2 248 (1 ) c et l    = − (1) fig. 1 cantilever membrane damping analysis to improve the performance of shunt capacitive rf mems switch 383 for the cantilever membrane as shown in fig. 1, the stiffness is equal to that of the spring constant (k). the mathematical equation can be given as [15], 3 34 ewt k l = (2) the resonant frequency of the cantilever membrane can be written as 0 1 2 2 r k f m    = = (3) where, m denotes membrane mass is given as m=ρ*l*w*t. the time required for the mems switch to come from the up state to the down state is known as the switching time. for an electrostatically actuated mems switch, the switching time can be expressed as 0 3.67 pull in s s v t v  −  (4) the capacitive switch insertion and the isolation properties truly depend on the switch capacitance ratio. the rf mems switch upstate and down state capacitance can be expresses as [16], 0 1 up d r a c t g   = + (5) 0 r down d a c t   = (6) 'a' is the cross sectional area among the membrane and the cpw strip, and ‘td’ is the dielectric thin film thickness. in terms of the return loss and the upstate and downstate capacitance the insertion losses (s21) can be expressed as 2 2 21 2 11 1 up down c s cs   =     (7) the isolation losses (s21) depend on the characteristic impedance and the rf frequency (f0) of the switch and can be expressed as 02 2 2 0 2 2 21 02 0 2 2 02 0 4 4 4 down s for f f c z r s for f f z l for f f z        =        (8) 384 l. n. thalluri, k v v kumar, k. r. sekhar, n b babu d.3, s s kiran, k. guha 4. membrane iterative analysis a rectangular cantilever structure as shown in fig. 2, is considered from the point of view of the desired radio frequency requirement. its dimensions are given in table 1. we have performed the iterative analysis which helped decrease the required actuation voltage. fig. 2 performance improved cantilever structure with bottom electrode. table 1 performance improved cantilever structure dimensions. parameter variable value (µm) cantilever cl 220 cw 200 ct 0.5 slot1 l 10 w 160 slot2 l 5 w 180 perforation -5x5 bottom electrode (be) bel 120 bew 200 bet 0.6 overall we have performed the multiple iterations on cantilever membrane by varying the membrane thickness, by placing slots and by incorporating the perforation. the iterations are started with 220 µm length, 200 µm width and 1 µm thickness cantilever designed with gold material as shown in fig. 3. in the design of rf mems switches, the validation of the membrane properties is very important. the reliability of the switch depends on the multiple parameters in the membrane damping analysis. with the primary goal of the switch validation, we have considered membrane damping in every iteration. on the whole, we have observed the cantilever damping up to 8000 µs. in this iterative process, we have noticed a few important points i.e., the incorporation of slots into the membrane leads to an increase in the damping duration but also helps to reduce the actuation voltage. incorporating holes into the membrane helps to reduce the damping duration but at the same time it leads to an increase of the actuation voltage. damping analysis to improve the performance of shunt capacitive rf mems switch 385 386 l. n. thalluri, k v v kumar, k. r. sekhar, n b babu d.3, s s kiran, k. guha fig. 3 cantilever structure iterative analysis however, we have considered the 6th iteration membrane for the design of the final rf mems switch i.e., a gold membrane with two slots, perforation and 0.7 µm thickness. this requires an actuation voltage of 7.3 v for 3 µm displacement and switching time is 110 µs as shown in fig. 4. damping analysis to improve the performance of shunt capacitive rf mems switch 387 (a) (b) fig. 4 cantilever membrane, (a) the displacement distribution under electrostatic actuation, (b) displacement versus switching time fig. 5 eigen frequencies 388 l. n. thalluri, k v v kumar, k. r. sekhar, n b babu d.3, s s kiran, k. guha in the rf mems switch performance analysis, eigen frequencies help to analyze the deformation of the membrane during electrostatic actuation as shown in fig.5. the real advantage of introducing holes into the membrane is that it helps to improve the insertion properties of the switch. this facilitates the electrostatic actuation and at the same time the holes make the release of the membrane during the fabrication process easier. the membrane thickness reduction helps reduce the required actuation voltage but up to some level the damping duration becomes limited. however, if the membrane thickness is below 0.7 µm, the membrane damping duration exceeds the limits. in the 7th iteration, we have notices that for a 0.6 µm thickness the membrane undergoes continuous damping which will lead to membrane collapse. so eventually, we have taken the membrane with 0.7 µm thickness which requires 7.3 v for a 3 µm displacement. the designed membrane is resonating at 27 khz in electrostatic actuation as shown in fig. 6. fig. 6 resonant frequency the real advantage introduced by perforating the membrane is to ensure an improved stress distribution. consequently, the reliability of the switch will improve. the stress distribution in the cantilever membrane is shown in fig. 7. fig. 7 stress distribution in the designed cantilever membrane damping analysis to improve the performance of shunt capacitive rf mems switch 389 5. rf mems switch the rf mems switch is designed using performance improved rectangular membrane with slots and perforation. the cpw transmission line with silicon used as a substrate is shown in fig. 8. the height of the silicon substrate is 800 µm. fig. 8 shunt capacitive rf mems switch with cantilever membrane a dielectric thin film of 1 µm thickness is placed on the top of the silicon substrate for better insulation. a cpw transmission line with g-s-g of 85 µm 70 µm 85 µm is micromachined in gold (au). unlike the traditional rf mems switches, in this work we have incorporated a separate actuation electrode of 120 µm -200 µm 0.6 µm to be used for cantilever electrostatic actuation, which helps reduce the noise in the rf cpw line. hfo2 of 220 µm length and 70 µm width is used as a dielectric material. its relative dielectric permittivity (εr) is 23. the complete switch dimensions are presented in table 2. the electrostatic actuation with 7.3 v creates an electrostatic force of 7.5 x 10-7 n. the membrane spring constant is 0.25 n/m. the capacitance analysis results with high relative permitivity thin films are listed in table 3. the designed rf mems switch shows an isolation of -63.2 db and an insertion of -0.12 db as shown in fig. 9 and fig. 10, respectively. our presented work is compared to the state of art as presented in table 4. 390 l. n. thalluri, k v v kumar, k. r. sekhar, n b babu d.3, s s kiran, k. guha fig. 9 isolation losses fig. 10 insertion losses table 2 shunt capacitive rf mems switch dimensions parameter description value(µm) parameter description value(µm) sl substrate dimensions 800 dl dielectric 220 sw 500 dw 70 st 800 bpl bias line 50 g-s-g cpw line & slots 85-70-85 bpw 50 d 120 g 10 e 40 h 185 f 300 i 50 table 3 capacitance ratio material dielectric constant (εr) dielectric thickness (dt) upstate capacitance (cup) downstate capacitance (cdown) capacitance ratio = cdown/cup aln 9.8 0.1 µm 73.9 ff 11 pf 148.8 gaas 12 0.1 µm 75.6 ff 13.5 pf 178.5 hfo2 23 0.1 µm 77.3 ff 26 pf 336.3 damping analysis to improve the performance of shunt capacitive rf mems switch 391 table 4 our work comparison with state-of-art parameter [17] [18] our work substrate glass silicon silicon insulator -sio2 sio2 micro mechanical structure cantilever cantilever cantilever damping analysis is performed no no yes air gap (µm) 3 3 3 actuation voltage (v) 16 19 7.3 total reaction electrostatic force (n) ----7.5 * 10-7 displacement (µm) 3 3 3 spring constant (n/m) ----0.25 upstate & downstate capacitances -& 2.75 pf -&0.02 pf 77.3 ff & 26 pf insertion loss (db) -0.41 0.05 -0.01 to -0.12 isolation loss (db) -20 -43 -20 to 63.2 6. conclusion the micro-cantilever based electrostatically actuated shunt capacitive rf mems switch is designed and after multiple iterations on cantilever structure modification the proposed structure requires low actuation voltage of 3.34 v for 3 µm deformation. this low actuation voltage is a result of identifying the critical membrane thickness of 0.5 µm, and incorporating two slots and an array of holes into the membrane. a similar iterative approach is used to design the final rf mems switch. the rf mems switch is micromachined on a cpw transmission line with g-s-g of 85 µm 70 µm 85 µm. the switch rf isolation properties are analyzed for different high dielectric constant thin films including aln, gaas, and hfo2. for all the dielectric thin films the rf mems switch shows a high isolation of -63.2 db, but there is a shift in the radio frequency. references [1] l. n. thalluri, k v v kumar, k r sekhar, n bhushana babu d, s s kiran, koushik guha, “iterative approach and structure damping analysis to advance the performance of shunt capacitive rf mems switch” in proceedings of the international conference on micr/nano electronics devices, circuits and systems (mndcs2021), 30-31 january, 2021, india. [2] h. r. ansari, s. khosroabadi, “design and simulation of a novel rf mems shunt capacitive switch with a unique spring for ka-band application”, microsystem technologies, 2018. [3] l. n. cheulkar, v. b. sawant and s. s. mohite, “evaluating performance of thermally curled microcantilever rf mems switches”, materials today: proceedings, 2019. [4] v. v. reddy, “frequency reconfigurable fractal patch circularly polarized antennas for gsm/wi-fi/wimax applications”, iete journal of research, 2019. [5] m. perić, s. ilić, s. aleksić, n. raičević, m. bichurin, a. tatarenko, r. petrov, “covered microstrip line with ground planes of finite width”, facta universitatis series: electronics and energetics, vol. 27, no. 4, 2014. [6] t. l. narayana, k. g. sravani & k. s. rao, “design and analysis of cpw based shunt capacitive rf mems switch”, cogent engineering, 2017. [7] s. agarwal, r. kashyap, k. guha, s. baishya, “modeling and analysis of capacitance in consideration of the deformation in rf mems shunt switch”, super lattices and microstructures, 2016. [8] j. iannacci, “rf–mems for high–performance and widely reconfigurable passive components – a review with focus on future telecommunications, internet of things (iot) and 5g applications”, journal of king saud university science, 2017. 392 l. n. thalluri, k v v kumar, k. r. sekhar, n b babu d.3, s s kiran, k. guha [9] j. iannacci, “rf-mems technology as an enabler of 5g: low-loss ohmic switch tested up to 110 ghz”, sensors and actuators a, vol. 279, pp. 624–629, 2018. [10] t. ciric, z. marinković, r. dhuri, o. pronić-rančić, v. marković, “hybrid neural lumped element approach in inverse modeling of rf mems switches”, facta universitatis series: electronics and energetics, vol. 33 no. 1, 2020. [11] h. kuisma, a. cardoso, t. braun, “fan-out wafer-level packaging as packaging technology for mems”, 2020. [12] r. laishram, o. p. thakur, d. k. bhattacharya, harsh, anshu goyal, renu sharma, jagbir singh, and ramjay pal, “low temperature deposited bst thin films for rf mems switch”, integrated ferroelectrics, vol. 116, pp. 35–40, 2010. [13] i. tittonen, m. koskenvuori, “electrostatic and rf-properties of mems structures”, silicon based mems materials and technologies, 2020. [14] t. singh, a. elhady, h. jia, a. mojdeh, c. kaplan, v. sharma, m. basha, e. abdel-rahman, “modeling of low-damping laterally actuated electrostatic mems”, mechatronics, vol. 52, 2018. [15] t. zengerle, j. joppich, p. schwarz, a. ababneh, h. seidel, “modeling the damping mechanism of mems oscillators in the transitional flow regime with thermal waves”, sensors and actuators: a. physical, 2020. [16] j. kaczynski, c. ranacher, c. fleury, “computationally efficient model for viscous damping in perforated mems structures”, sensors and actuators a, vol. 314, 2020. [17] m. angira, d. bansal, p. kumar, k. mehta, k. rangra, “a novel capacitive rf-mems switch for multifrequency operation”, superlattices and microstructures, vol. 133, 2019. [18] o. pertin, kurmendra, “pull-in-voltage and rf analysis of mems based high performance capacitive shunt switch”, microelectronics journal, vol. 77, 2018. instruction facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 509 520 doi: 10.2298/fuee1404509j new function for representing iec 61000-4-2 standard electrostatic discharge current  vesna javor university of niš, faculty of electronic engineering of niš, serbia abstract. new function for representing electrostatic discharge (esd) currents according to the iec 61000-4-2 standard current is proposed in this paper. good agreement with the standard defined parameters is obtained. this function is compared to other functions from literature. its first derivative needed for field calculations is analyzed in the paper. main advantages are simplified choice of parameters, possibility to obtain discontinuities in the decaying part, and zero value of the function first derivative at t=0+. parameters of the function are obtained by using least-squares method (lsqm). key words: analytically extended function, electromagnetic compatibility, electrostatic discharge current, iec 61000-4-2, least-squares method 1. introduction nowadays, electromagnetic compatibility (emc) gains in its importance with the development and global marketing of electronic components, electrical devices and systems, so as with public concern for electromagnetic pollution. electrical engineers and industrial professionals, dealing with the design and manufacture of such products, have to take into account many aspects of emc in order to obtain and market a product which complies with emc standards and directives. besides utility and functionality, better appearance but lower costs as possible, any device, equipment or system has to comply with its electromagnetic environment and to function satisfactorily without introducing intolerable electromagnetic disturbances (emds) to other in its environment or being disturbed by an external influence from the environment [1]. electrostatic discharges (esds) are common phenomena and among very important emc aspects of concern. lightning discharges are discharges of static electricity, although their processes are in fact transient, and far from being “static” phenomena. these discharges produce the most powerful emds for electrical systems. in general, electrostatic discharges are dangerous in many technological processes: in textile industry, petrol industry, powder production, food industry, chemical industry, manipulating with various substances and transporting them, etc. however, there are also useful applications of esds: in medical  received july 1, 2014 corresponding author: vesna javor faculty of electronic engineering, a. medvedeva 14, 18000 niš, republic of serbia (e-mail: vesna.javor@elfak.ni.ac.rs) 510 v. javor devices as defibrillators, in photocopiers, spray painting, electrostatic precipitators, electrostatic dusters, some technological processes in producing fabrics, etc. an esd occurs between two objects at a distance close enough for the sufficient difference of their electrostatic potentials to produce breakdown. static electricity may appear not only on parts of machines and after separating different materials in contact, but also on humans. in every day’s life, human body may discharge through fingers or other body parts via skin or small metal pieces, such as keys, to some objects. this may happen at working places which is dangerous in production of electronic components. it is well known that integrated circuits and fast complementary metal oxide semiconductor components, so as digital devices in general, are more sensitive than analog, although esd may have influence on any kind of electrical devices and systems. the standard iec 61000-4-2 [2], [3], and european standard en 61000-4-2 (issued by cenelec) deal with the typical waveform of electrostatic discharge current, range of test levels, test equipment, test set-up and procedures related to electrostatic discharge immunity requirements for the equipment under test (eut). scientific committee sc77b, wg 10, is also maintaining the standard 61000-4-3 on radiated radio-frequency electromagnetic field immunity test, ([4],[5]). recent status of these standards and the elements of maintenance are discussed in [6]. test generators current waveform is defined in iec/en 61000-4-2 standards for contact esd testing: its initial peak current, current level at 30ns, current level at 60ns, so as rise time from 10% to 90% of the initial peak current. in order to improve the repeatability of tests, tolerance of the rise time of electrostatic discharge current waveform was expanded in the ed.2 of the standard [3]. the oscilloscope bandwidth was increased beyond 1ghz, so to measure rise time more accurately [7]. minimum 2ghz oscilloscope bandwidth is needed according to the iec 61000-4-2, ed.2. esd generators simulate real discharges thus enabling repetitive test procedures for eut. however, esd test generator current waveshape depends on various conditions, as discussed in [8], and these are: charging voltages, approach speeds, types of electrodes, relative arc length, humidity, etc. parameters of the real esd testers are also discussed in [9], and the influence of various conditions on current waveshape is investigated using simulation with pspice in [10]. a modified test generator with a reference waveshape close to the standard one and the corresponding equation for that waveshape are discussed in [11]. another equation was proposed already in [12] in order to study esd in coaxial cable shields. a mathematical function accurately representing standard esd current is necessary for computer simulation of such phenomena, for verification of test generators and for better modeling of esds. mathematical functions for modeling lightning discharge currents are used in literature to approximate currents of esd testing waveforms, but they have some disadvantages along with their complexity, as described in [13]. new function which may represent both typical esd and lightning currents, as given in corresponding standards, is proposed in this paper in order to make further steps in research and use advantages of computer simulations of the problem. any function is more useful for such purposes if simple as possible, whereas still capable to satisfactorily approximate experimentally measured characteristics. channel-base current function (cbc) is proposed in [14] for typical and experimental lightning stroke currents, and two-peaked function in [15]. for representing esd currents an analytically extended function (aef), as the sum of two or three cbc expressions, is used in this paper. new function for representing electrostatic discharge current 511 the procedure of choosing function parameters has to be further investigated in order to make it simple for any user. these parameters may be estimated applying different procedures such as genetic algorithm (ga) as in [17], or marquardt least-squares method (mlsm) as done in [18] for the lightning currents. in this paper least-squares method (lsqm) is used. firstly, the analysis of usually used functions is given, and after that the comparison of the proposed function to the iec 61000-4-2 standard one, so as the choice of its parameters and the analysis of the first derivative. 2. functions for approximating electrostatic discharge currents in iec 61000-4-2 standard, esd current peak is described with 3.75a/kv, current value ns30i at 30ns with 2a/kv, ns60i at 60ns with 1a/kv. the tolerance for esd contact mode currents is  10% for ipeak in ed.1,  15% in ed.2,  30% for ns30i and ns60i (in both ed.1 and ed.2). rise time rt in the range 0.7 1ns is defined in ed.1 for a typical contact mode discharge, and 0.6  1ns in ed.2 of the standard. parameters of esd currents are given in table 1, for the defined discharge test voltages. discharges may be contact or air esds. according to the standard, application of contact discharges is preferably used for testing, whereas air discharge only if not available otherwise. test level voltages range between 2 and 8kv for contact discharges, but between 2 and 15kv for air discharges. the arc lengths about 0.85mm are common for esd test generators and for 5kv as discussed in [11], but level and rise time of esd currents are less reproducible in the case of air discharge and depend significantly on humidity, shape of the tip, speed of the tip approach, etc. esd of a human through a small piece of metal is simulated with esd generators for testing robustness of sensitive electronics toward esd. current waveform parameters are given in table 1 for 2, 4, 6 and 8kv discharge voltages. human-body model (hbm) discharge current may be approximately obtained with a simple electrical circuit having the charging resistor  m10050 , energy-storage capacitor 150pf 10%, and the discharge resistor of 330 value representing skin, as in fig.1. the produced waveshape differs from the test generator esd currents, so as from the standard one. more complex circuits are also suggested in literature. table 1 standard 61000-4-2 esd current waveform parameters discharge voltage [kv] ipeak [a] %10 (ed.1) %15 (ed.2) rise time of the first peak rt [ns] (ed.1) rise time of the first peak rt [ns] (ed.2) ns30i [a] %30 (ed.1, 2) ns60i [a] %30 (ed.1, 2) 2 7.5 0.7 1 0.6 1 4 2 4 15 0.7 1 0.6 1 8 4 6 22.5 0.7 1 0.6 1 12 6 8 30 0.7 1 0.6 1 16 8 512 v. javor fig. 1 simple circuit for obtaining typical hbm current waveform [2] fig. 2 esd current waveform given in iec 61000-4-2 hbm and contact mode discharges are used for verification of esd test generators, and the standard esd current pulse is given in fig. 2. some functions from literature are compared for 4kv esd and the proposed function is compared to the best fit function of those and the standard waveshape. the following expression is proposed in [19], using four exponential functions 1 1 2 2 3 4( ) [exp( / ) exp( / )] [exp( / ) exp( / )]i t i t t i t t           , (1) for i1 = 498a, i2 = 148.5a, 1 = 1.4ns, 2 = 1.3ns, 3 = 23.37ns, 4 = 20ns as function parameters. this function is presented in figs. 3 and 4 with the dash-dot line. an expression using two gaussian functions is proposed for esd currents in [12] as the following: 2 22 2 1 1 2 2( ) exp[ ( ) /σ ] exp[ ( ) /σ ]i t a t t b t t t      , (2) for a = 13a, b = 0.4a/ns, t1 = 5ns, t2 = 10ns, 1 = 1.414ns, 2 = 35.35ns. this function is presented in figs. 3 and 4 with the dash-dot-dot line for a = 13.25a, b = 391a/ns, t1 = 2ns, t2 = 300ns, 1 = 0.6ns, 2 = 122.2ns, as given in [13]. for the experimental esd current described in [16] parameters of (2) are determined by using ga and minimizing relative error of the current as the following: a = 4.95a, b = 0.27a/ns, new function for representing electrostatic discharge current 513 t1 = 5.18ns, t2 = 1.62ns, 1 = 9.78ns, 2 = 54.72ns. using ga method and minimizing relative error of the current, parameters of (2) in [21] are determined as: a = 5.29a, b = 0.33a/ns, t1 = 6.07ns, t2 = 9.48ns, 1 = 4.31ns, 2 = 52.03ns. the pulse function [23] is given with the following expression 0 1 2( ) [1 exp( / )] exp( / )pi t i t t     , (3) and its binomial expression with 0 1 2 1 3 4( ) [1 exp( / )] exp( / ) [1 exp( / )] exp( / )p qi t i t t i t t           . (4) for 4kv esd and the binomial expression (4) of pulse functions, for parameters: i0 = 106.5a, i1 = 60.5a, 1 = 0.62ns, 2 = 1.1ns, 3 = 55ns, 4 = 26ns, [13], the waveshape is presented in figs. 3 and 4 with the long-dash lines. the trinomial expression of pulse functions is given with 0 1 2 1 3 4 2 5 6 ( ) [1 exp( / )] exp( / ) [1 exp( / )] exp( / ) [1 exp( / )] exp( / ), p q r i t i t t i t t i t t                   (5) and the quadrinomial expression with 0 1 2 1 3 4 2 5 6 3 7 8 ( ) [1 exp( / )] exp( / ) [1 exp( / )] exp( / ) [1 exp( / )] exp( / ) [1 exp( / )] exp( / ). p q r r i t i t t i t t i t t i t t                         (6) the trinomial (5) and quadrinomial (6) expressions provide better approximations [13] of the esd current and give results more similar to the goal function, but these functions have too many parameters. one function commonly used for lightning currents is applied in [11], having binomial expression of two heidler’s functions [20] 31 1 2 2 4 1 21 3 ( / )( / ) ( ) exp( / ) exp( / ) η η1 ( / ) 1 ( / ) nn n n ti t i i t t t t t            , (8) for peak correction factors 1/ 1 2 1 2 1 exp τ n n                and                  n n /1 3 4 4 3 2 τ τ τ τ expη . to approximate the measured human-metal esd at 5kv current parameters are chosen as the following: i1 = 21.9a, i2 = 10.1a, 1 = 1.3ns, 2 = 1.7ns, 3 = 6ns, 4 = 58ns and n =3. for the 4kv discharge parameters values in [13] are chosen as: i1 = 17.5a, i2 = 10.1a, 1 = 1.3ns, 2 = 1.7ns, 3 = 8.7ns, 4 = 42ns and n =3. this function is presented in fig.3 with the dot line. after choosing n = 3 as an initial value and using ga with minimizing relative error of the current, parameters are determined for the experimental esd current described in [16] as the following: i1 = 17.46a, i2 = 7.81a, 1 = 0.75ns, 2 = 0.82ns, 3 = 3.43ns, 4 = 68.7ns. the waveform approximating the esd current from iec 61000-4-2 ed.2 [3], for 4kv, is obtained for: i1 = 16.6a, i2 = 9.3a, 514 v. javor 1 = 1.1ns, 2 = 2.0ns, 3 = 12ns, 4 = 37ns, n = 1.8, and presented in figs. 3 and 4 with the full lines. after choosing 7.1n as an initial value in [22] for ga procedure with minimizing relative error of the current, parameters are calculated for the esd current as the following: i1 = 16.3a, i2 = 9.1a, 1 = 1.2ns, 2 = 2.05ns, 3 = 11.7ns, 4 = 37.3ns, n = 1.82. in [21] is proposed the following function  ( ) exp[ ] expi t at ct bt dt    , (9) for approximating iec 61000-4-2 ed.2 esd current with the following parameters: a = 38.1679a/ns, b = 1.0526a/ns, c = 1ns 1 , and d = 0.0459ns 1 . the function is presented in figs. 3 and 4 with the short-dash lines. fig. 3 functions approximating the standard 61000-4-2 esd current waveform for 4kv rising time is the difference between tb for 90% of the current peak (i90%=13.5a) and ta for 10% of the current peak (i10%=1.5a). rising times as in the standard 61000-4-2 are obtained with very different waveshapes behaviour in the first 5ns of functions from fig. 3 as presented in fig. 4. all the functions are presented from t=0 + , for imax=15a, although the standard function rises between 6 and 8 ns, given with tollerably lowered peak value imax=14a, if i30ns = 8a and i60ns=4a are chosen as reference (figs. 2 and 5). two-gauss function has the greatest rising time and wang function the shortest. four-exponential expression and wang function don’t have realistic rising parts. two-heidler’s function for n=1.8, given with the full lines in figs. 3 and 4, represent the standard waveshape better than the others. new function for representing electrostatic discharge current 515 fig. 4 functions approximating the standard 61000-4-2 esd current waveform for 4kv in the first 5ns, with notations from fig. 3 3. new function for approximating electrostatic discharge currents an analytically extended function (aef), with the same expression before and after time moments of maxima, but for different parameters, is proposed for approximating esd currents. its main advantages are: simply adjustable derivative value, rise time value, time to the peak value, exact peak values chosen prior to adjusting other parameters and a suitable waveform with the zero first derivative at the point t=0 + . the function is continuous, with its first derivative also continuous at any t, so it is of differentiability class c 1 . higher order derivatives have discontinuities at the points of maximum/minimum, so the first derivative of the function belongs to class c 0 . current function cbc [14] is given with the following expression 1 1 1 1 1 1 1 1 1 ( / ) exp[ (1 / )] , 0 , ( ) ( / ) exp[ (1 / )] , , a m m m m b m m m m i t t a t t t t i t i t t b t t t t           (10) and another with 2 2 2 2 2 2 2 2 2 ( / ) exp[ (1 / )] , 0 , ( ) ( / ) exp[ (1 / )] , , c m m m m d m m m m i t t c t t t t i t i t t d t t t t           (11) so that )()()( 21 tititi  (12) may represent esd current. it is denoted with esd2 and presented in fig. 5. it may be written in another way as 516 v. javor 1 1 1 2 1 1 1 1 1 1 2 2 2 1 2 1 1 1 2 2 2 2 ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], 0 ( ) ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], a c m m m m m m m b c m m m m m m m m b d m m m m m m m i t t a t t i t t c t t t t i t i t t b t t i t t c t t t t t i t t b t t i t t d t t t t                     (13) as a, b, c, and d are the constants, and 21 mm tt  . using lsqm to approximate iec 61000-4-2 standard esd current, the parameters are determined as im1=14a, im2=8.4a, tm1=1ns, tm2=21ns, a=2, b=0.3, c=3, and d=0.9. if three functions are used, based on the same expressions, their sum better represents the iec 62305-1 standard current, as given in fig. 5 and denoted with esd3. 1 1 1 1 1 1 1 1 1 ( / ) exp[ (1 / )] , 0 , ( ) ( / ) exp[ (1 / )] , , a m m m m b m m m m i t t a t t t t i t i t t b t t t t           (14) 2 2 2 2 2 2 2 2 2 ( / ) exp[ (1 / )] , 0 , ( ) ( / ) exp[ (1 / )] , , c m m m m d m m m m i t t c t t t t i t i t t d t t t t           (15) 3 3 3 3 3 3 3 3 3 ( / ) exp[ (1 / )], 0 , ( ) ( / ) exp[ (1 / )], , e m m m m f m m m m i t t e t t t t i t i t t f t t t t           (16) so that esd3 is )()()()( 321 titititi  . (17) this may be written also as 1 1 1 2 2 2 3 3 3 1 1 1 1 2 2 2 3 3 3 1 2 1 1 ( / ) exp[ (1 / )] ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], 0 ( / ) exp[ (1 / )] ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], ( ) ( / ) exp[ ( a c m m m m m m e m m m m b c m m m m m m e m m m m m b m m i t t a t t i t t c t t i t t e t t t t i t t b t t i t t c t t i t t e t t t t t i t i t t b                1 2 2 2 3 3 3 2 3 1 1 1 2 2 2 3 3 3 3 1 / )] ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], ( / ) exp[ (1 / )] ( / ) exp[ (1 / )] ( / ) exp[ (1 / )], d m m m m e m m m m m b d m m m m m m f m m m m t t i t t d t t i t t e t t t t t i t t b t t i t t d t t i t t f t t t t                           (18) as a, b, c, d, e and f are the constants, and 321 mmm ttt  . using lsqm the parameters are determined as im1=14a, im2=8.2a, im3=2.2a, tm1=1ns, tm2=21ns, tm3=50ns, a=2, b=0.3, c=2.5, d=1.5, e=15, and f=7. for both esd2 and esd3 the maximum peak value can be set to 15a simply by choosing im1=15a. esd3 better represents iec 61000-4-2 standard current waveform as given in fig. 5, than esd2 or two-heidler’s function for n=1.8. its derivative is also continuous, but of differentiability class c 0 as the first derivative has discontinuities at tm1, tm2 and tm3. new function for representing electrostatic discharge current 517 fig. 5 aef approximating iec 61000-4-2 standard current waveform for 4kv fig. 6 esd3 rising part from 6 to 8 ns 518 v. javor fig. 7 esd3 derivative for a=2 fig. 8 esd3 derivative from 15 to 100ns the esd3 function rising part is given in fig. 6. the function derivative in the first 100ns is presented in fig. 7. first derivative is greater for greater parameter a, so that for a=10 rising time is 0.4ns, for a=5 is 0.5ns, and for a=2 is 0.6ns as defined in iec610004-2 standard. parameter a does not influence on the choice of other parameters. fig. 8 shows the esd3 derivative from 15 to 100ns, where the needed discontinuities according to the standard current appear. esd2, esd3 and two-heidler’s function (for n=1.8) are given in fig. 9. for the comparison two-heidler’s function is delayed for 6ns and its peak is set to the same value as for esd2 and esd3 representing the standard current. new function for representing electrostatic discharge current 519 fig. 9 esd2, esd3 and two-heidler’s function representing the standard current conclusions functions for approximating esd currents are needed for simulation of different types of electrostatic discharges, calibration of test equipment and adequate representation of the iec 61000-4-2 standard current. important features of such mathematical functions are good approximation of realistic waveshapes and discontinuities in specified time intervals, zero function derivative at t=0 + , and simple choice of function parameters. new function presented in this paper in two forms, esd2 and esd3, may be used to approximate different electrostatic discharge currents. their waveshapes are compared to other functions from literature and show better agreement with the iec 61000-4-2 standard current waveshape and its defined parameters. the function derivative is also analyzed. rising time, maximum and minimum values, so as needed discontinuities, may be obtained for this function independently from other parameters and without peak correction factors simplifying any optimization algorithm used to obtain its parameters. further research will include calculation of parameters according to experimentally measured esd currents, and application of different optimization procedures. acknowledgement: this paper is in the frame of research within the project humanism iii 44004 financed by the serbian ministry of education, science and technological development. 520 v. javor references [1] c. paul, "introduction to electromagnetic compatibility", ed. 2, john wiley & sons, 2006. [2] emc – part 4-2: testing and measurement techniques – electrostatic discharge immunity test. iec international standard 61000-4-2, basic emc publication, 1995+a1:1998+a2:2000. [3] emc – part 4-2: testing and measurement techniques – electrostatic discharge immunity test. iec international standard 61000-4-2, ed. 2, 2009. [4] emc – part 4-3: testing and measurement techniques radiated radio-frequency immunity test. iec international standard 61000-4-3, ed. 2, 2002. [5] emc – part 4-3: testing and measurement techniques radiated radio-frequency immunity test. iec international standard 61000-4-3 (77b/339/fdis), ed. 3, 2006+a1:2007. [6] t. ishida, g. hedderich, "recent status of iec 61000-4-2 and iec 61000-4-3", emc’09 kyoto, 2009, pp. 821-824. [7] t. c. moyer, r. gensel, "update on esd testing according to iec 61000-4-2", em test. [8] d. pommerenke, m. aidam, "esd: waveform calculation, field and current of human and simulator esd", j. electrostat., no.38, 1996, pp. 33-51. [9] o. fijuwara, h. tanaka, y. yamanaka, "equivalent circuit modeling of discharge current injected in contact with an esd gun", electr. eng. japan, no.149, 2004, pp. 8-14. [10] n. murota, "determination of characteristics of the discharge current by the human charge model esd", simulator electron. commun. japan, no.80, 1997, pp. 49-57. [11] k. wang, d. pommerenke, r. chundru, t. van doren, j. l. drewniak, a. shashindranath, "numerical modeling of electrostatic discharge generators", ieee transactions on emc, vol.45, no.2, may 2003, pp. 258-271. [12] s. v. berghe, d. zutter, "study of esd signal entry through coaxial cable shields", j. electrostat., no.44, 1998, pp. 135-148. [13] z. yuan, t. li, j. he, s. chen, r. zeng, "new mathematical descriptions of esd current waveform based on the polynomial of pulse function", ieee transactions on emc, vol.48, no.3, 2006, pp. 589591. [14] v. javor, "multi-peaked functions for representation of lightning channel-base currents," 31st int. conf. on lightning protection iclp 2012, proc. of papers, doi: 10.1109/iclp.2012.6344384 ,vienna, 2012. [15] v. javor, "approximation of a double-peaked lightning channel-base current", compel: the int. journal for comp. and mathematics in electrical and electronic engineering, vol.31, no.3, 2012, pp. 1007-1017. [16] g. p. fotis, i. f. ganos and i. a. stathopulos "determination of discharge current equation parameters of esd using genetic algorithms," electronic letters, vol.42, no.14, july 2006. [17] g. p. fotis, f. e. asimakopoulou, i. f. ganos and i a. stathopulos, "applying genetic algorithms for the determination of the parameters of the electrostatic discharge current equation", measurement science and technology, vol.17 (2006), pp. 2819-2827, 2006. [18] k. lundengard, m. rančić, v. javor, s. silvestrov, "estimation of pulse function parameters for approximating measured lightning currents using the marquard least-squares method", emc europe 2014, 2014, (accepted for publication). [19] r. k. keenan, l. k. a. rosi, "some fundamental aspects of esd testing", in proc. ieee int. symp. on electromagnetic compatibility, aug. 12-16, 1991, pp. 236-241. [20] f. heidler, “travelling current source model for lemp calculation,” in proc. 6th int. zurich symp. emc, zurich, switzerland, pp. 157-162, mar. 1985. [21] k. wang, j. wang, x. wang, "four order electrostatic discharge circuit model and its simulation", telkomnika, vol.10, no.8, pp. 2006-2012, dec. 2012. [22] g. p. fotis, l. ekonomou, "parameters’ optimization of the electrostatic discharge current equation", int. journal on power system optimization., vol.3, no.2, pp. 75-80, 2011. [23] s. shenglin, b. zengjun, l. shange, "a new analytical expression of standard current waveform", high power laser and particle beams, vol.15, no.5, pp. 464-466, 2003. [24] r. chundru, d. pommerenke, k. wang, t. van doren, f. p. centola, j. s. huang "characterization of human metal esd reference discharge event and correlation of generator parameters to failure levels – part i: reference event", ieee transactions on emc, vol.46, no.4, pp. 498-504, nov. 2004. [25] v. javor, "modeling of lightning strokes using two-peaked channel-base currents", int. journal of antennas and propagation, vol. 2012, article id 318417, doi: 10.1155/2012/318417, 2012. http://dx.doi.org/10.1109/iclp.2012.6344384 instruction facta universitatis series: electronics and energetics vol. 27, no 3, september 2014, pp. 467 477 doi: 10.2298/fuee1403467p automatic prosody generation in a text-to-speech system for hebrew  branislav popović 1 , dragan knežević 1 , milan sečujski 1 , darko pekar 2 1 faculty of technical sciences, university of novi sad, serbia 2 alfanum – speech technologies, novi sad, serbia abstract. the paper presents the module for automatic prosody generation within a system for automatic synthesis of high-quality speech based on arbitrary text in hebrew. the high quality of synthesis is due to the high accuracy of automatic prosody generation, enabling the introduction of elements of natural sentence prosody of hebrew. automatic morphological annotation of text is based on the application of an expert algorithm relying on transformational rules. syntactic-prosodic parsing is also rule based, while the generation of the acoustic representation of prosodic features is based on classification and regression trees. a tree structure generated during the training phase enables accurate prediction of the acoustic representatives of prosody, namely, durations of phonetic segments as well as temporal evolution of fundamental frequency and energy. such an approach to automatic prosody generation has lead to an improvement in the quality of synthesized speech, as confirmed by listening tests. key words: speech synthesis, speech processing, natural language processing, classification and regression trees 1. introduction explicit modeling of prosodic features of synthesized speech, as well as prediction of values of certain parameters of a model based on explicit morphological, phonetic, syntactic and other relevant rules, is considered to be a relatively poor solution in practice. this is due to an enormous number of factors that need to be considered, as well as their mutual influence, too complicated to be closely examined on reasonably large speech corpora [1]. on the other hand, inadequately determined prosodic features impair the naturalness, and in some cases even the intelligibility of synthesized speech, significantly narrowing the field of its application. as the use of machine learning methods eliminates the need for explicit modeling of prosody, they have been widely adopted as a solution for automatic prosody generation  received february 25, 2014; received in revised form may 21, 2014 corresponding author: branislav popović university of novi sad, faculty of technical sciences, trg dositeja obradovića 6, 21000 novi sad, serbia (e-mail: bpopovic@uns.ac.rs) 468 b. popović, d. knežević, m. seĉujski, d. pekar within text-to-speech systems. furthermore, they can also provide information about the mutual influence of specific linguistic factors (e.g. masking), which is of great interest to the linguistic community. in this paper, automatic training and subsequent prediction of prosodic features are carried out according to the methodology of classification and regression trees (cart) [2]. the idea of this methodology is to generate a tree structure through the process of automatic training based on a speech corpus of sufficient size. such a training should identify the most relevant factors that influence the prosodic features of speech and their acoustic representatives – phone durations as well as temporal evolution of fundamental frequency and energy. the speech corpus is marked for phone boundaries as well as relevant prosodic events, such as types and levels of boundaries between adjacent intonation units, as well as levels of emphasis. using regression trees trained on thus annotated speech corpus, the quality of synthesized speech is significantly improved compared to the quality obtained by conventional methods for prosody prediction in text-to-speech [3], [4], [5]. the paper is organized as follows. section 2 presents the particularities of the hebrew language, as it is well known that the properties of the target language significantly affect the development of a system for automatic speech synthesis (most notably the automatic prosody generation module). section 3 defines the procedure of automatic part-of-speech (pos) tagging and additional morphological annotation of input text. in section 4, prosody generation and synthesis are presented. section 5 presents the experimental results. in section 6, several conclusions are given. 2. language particularities the hebrew language, one of the most widely spoken semitic languages today, has a range of properties which drastically affect the design of a speech synthesis system. firstly, from the orthographical point of view, it belongs to the group of so called abjad languages, where each symbol commonly stands for a consonant [6]. however, vowels can be indicated by (1) the use of "weak consonants" serving as vowel letters (for example, the letter vav indicates that the preceding vowel is either /o/ or /u/, yodh indicates an /i/, whereas aleph indicates an /a/), or (2) by using a set of diacritical symbols called niqqud. another thing that should be borne in mind is that abjad languages, including hebrew, suffer from very loose spelling rules. this means that for a number of words there can be more than one acceptable spelling, which is a very serious source of ambiguity. namely, the revival of the hebrew language in the late 19 th century has left many unresolved issues [7]. as hebrew speakers were almost all native speakers of european languages and thus accustomed to the latin alphabet, it has led to the development of two parallel spelling systems: the first, where vowel indicators are used according to the historic rules, and the second, where vowel indicators are used excessively. it should also be noted that even today, a vast majority of speakers commonly makes spelling errors. therefore, if one aims at the design of a text-tospeech system which should be able to handle arbitrary texts, spelling errors have to be accepted as a part of standard inventory. spelling errors are thus another source of ambiguity in hebrew, and are something that the design of a practically applicable speech synthesizer cannot dismiss. automatic prosody generation in a text-to-speech system for hebrew 469 the hebrew alphabet has 22 letters, five of them have different forms when they are used at the end of a word. modern israeli hebrew has 5 vowel phonemes. however, the meaning of a word is carried not only by its phonological content, but also by its stress, and it is not uncommon to find pairs of words containing the same string of phonemes, but pronounced differently, the only difference being the stress. from the point of view of morphology, it should be noted that hebrew exhibits a pattern of stems consisting typically of consonantal roots from which nouns, adjectives, and verbs are formed in various ways. hebrew uses a range of very productive prefixes and a multitude of suffixes, dramatically increasing the number of possible morphological interpretations of each surface word form in the text. the syntactic structure of the sentence and the word ordering in hebrew can be considered as relatively flexible. although particular choices in word ordering can indicate specific literary styles or genres, one commonly encounters sentences where several orders of words can be considered equivalent. this is another source of difficulty for automatic morphological annotation of text. 3. morphological annotation after the text is preprocessed in order to locate sentence boundaries and reveal elements such as abbreviations, dates, punctuation, special characters, web addresses etc., it is submitted to automatic morphological annotation, aimed at assigning part-of-speech tags as well as some additional morphological information that may be of interest to any subsequent phase of automatic prosody generation. the morphological analysis begins by assigning an empty array of "readings" to every surface word form (token) in a sentence. the term "reading" denotes a morphological interpretation of this token together with its phonological representation, i.e. a particular inflected form of a word, together with the corresponding lemma, values of part-of-speech and corresponding morphological categories, its pronunciation as well as position and type of stress. in general, it is possible to derive several hundreds of morphological forms from a single lemma in hebrew. ideally, the lexicon should contain entries representing each and every possible surface word form. an evaluation score will be assigned to each of the readings of a word token during the evaluation process, in order to select the reading which is most likely to be correct. the aim of morphologic analysis is, thus, to distinguish between the available readings and thus assign a correct vocalization and stress pattern to each word, which is of utmost importance for the naturalness of synthesized speech. the novel approach to morphologic analysis described in this paper is outlined in fig. 1 and uses a combination of active and passive methods [8]. the passive method presumes the selection of appropriate lexemes, by using the hebrew lexicon, the lexicon of foreign words in hebrew transcription and finally, the lexicon of frequent foreign words in latin transcription. the active method involves an automatic morphological analysis of the input text string, as well as generation of appropriate readings by using a complex expert algorithm relying on a set of transformational rules. the use of the active method reduces the initialization time as well as the number of inflected morphological forms in the lexicon by two orders of magnitude, enabling the use of the software component within real-time applications. on the other hand, the passive methodology reduces the error rate. 470 b. popović, d. knežević, m. seĉujski, d. pekar fig. 1 morphological annotation of input text transformational rules in the form of complex tree structures are applied iteratively. branches are generated by using appropriate sets of morphological rules. word analysis is carried out morpheme by morpheme. every word is processed according to its left and right context. the aim is to correctly identify the surface form as a particular inflected form of a particular lemma. currently, the system supports more than 30 part-of-speech classes with more than 3000 corresponding morphological categories. the algorithm for the evaluation of particular readings, in order to select the most likely one, consists of a set of disambiguation tools, divided into individual scoring procedures. the scoring of syntactic structures assigns syntactic indexes to words using predefined statistical algorithms, aiming at establishing the similarity between the syntactic structure of input sentence and the predefined syntactic structures. the algorithm is coupled with an accurate comparison mechanism that allows the use of existing structures in order to project on unfamiliar ones. a syntactic score indicates the level of compatibility of a certain reading to the previously tagged syntactic environment. the scoring of semantic structures uses an analogous method, with only one difference: the structures represent semantic relations instead of syntactic ones. the index used is built over semantic attributes. the challenge in this process, besides building the most convenient set of indexes, is to determine the collection of a minimal number of morphological descriptors (tags) covering at the same time the maximum number of words. proximity scoring is the most efficient of the scoring processes. there are three types of proximity rules: generic to generic (this type of rules refers to the assignment of a relationship between linguistic items of non-specific identity, such as "there is a high probability that a verb in past tense of semantic category moving will be adjacent to a copula"; the attributes that can be used in composing these rules may be of grammatical and/or semantic nature), specific to generic (this type of rules would attach a generic rule to a specific word, e.g. "a verb in passive mood is likely to be followed by the word by") and specific to specific (this type of rules will attach two specific words, e.g. tel is likely to be followed by aviv). the effect of proximity scoring is clearly limited only to the words and entities for which proximity rules have been defined. full-niqqud scoring is a type of scoring unique to hebrew. it determines how close a certain reading of a word is to the most commonly used spelling version. due to the automatic prosody generation in a text-to-speech system for hebrew 471 previously mentioned lack of unique spelling standard, such a scoring procedure has to be taken into account as well. another scoring procedure used is frequency scoring, i.e. scoring readings according to their frequency in standard texts. although such a procedure is highly inaccurate on its own (it commonly serves as a baseline for establishing the performance of more sophisticated morphological annotation techniques), it can serve as an efficient tie-breaker, i.e. it can be used in cases where other scoring procedures have assigned approximately equal scores to multiple readings. every reading is also additionally evaluated in view of its context. context scores are obtained in compliance with the previously selected set of tags for the left context, as well as the set of tags for all possible readings in the right context. this is probably the most complex among all the applied scoring procedures. table 1 illustrates the effectiveness of the described scoring procedures, in terms of the overall accuracy of the automatic annotation process (selection of the correct reading), on the corpus of 3093 sentences (55046 words). table 1 the overall accuracy scoring type status syntactic on on on on semantic on on on on proximity on on on full niqqud on on frequency on on context on on on acc. [%] 92.3 85.9 44.7 45.1 32.1 46.9 99.3 99.4 99.6 table 2 presents the correlation matrix among the different scoring procedures. a high correlation between proximity, context and full-niqqud score can be noted. although such an analysis of the correlation between different scoring procedures is not immediately aimed at the improvement of the quality of synthetic speech, it can give an insight into the directions of the future development of the scoring system. at the same time, high correlation between particular scoring procedures, besides giving a linguistic insight into the problem, confirms the validity of the algorithms. table 2 the correlation matrix scoring type syntactic semantic proximity full niqqud context syntactic 1 0.062 0.238 0.224 0.239 semantic 0.062 1 0.356 0.364 0.342 proximity 0.238 0.356 1 0.945 0.982 full niqqud 0.224 0.364 0.945 1 0.929 context 0.239 0.342 0.982 0.929 1 472 b. popović, d. knežević, m. seĉujski, d. pekar fig. 2 evaluation scores and manually selected readings evaluation scores for an example sentence are presented in fig. 2. the sentence is given in the top right corner, and the readings with the highest scores (highlighted) match the actual correct readings. features recovered by automatic morphological annotation (primarily vocalization and stress pattern) constitute the symbolic representation of the prosody of a given input sentence. this representation will be used as an input to the cart prosody generator, which will, in turn, produce a corresponding sequence of values of fundamental frequency and energy, as well as phone durations. 4. prosody generation and synthesis as has been mentioned before, it is well known that fully expert systems used for modeling of prosodic features are not of great practical use within speech synthesizers, mostly due to the large number of factors that influence prosody as well as their mutual effects, which are too complex to be sufficiently analyzed on speech corpora of reasonable size. speaker inconsistence represents an additional problem. even a single speaker can be expected to pronounce the same sentence differently on different occasions, each of the resulting utterances being equally acceptable to the listener. for all these reasons, the prediction of prosodic features is performed using machine learning, namely the methodology of classification and regression trees (cart) [9]. the basic principle of cart prosody prediction will be shown on an example of predicting the durations of phonetic segments (phones). the initial and the most important step is to identify the features to be used for training. this step has some basis in expert knowledge but the rest of the procedure is completely automatic. the set of features considered to be relevant for the phone duration includes phonemic identity, primary and secondary stress (with values: stressed, unstressed; applicable to vowels only), position within the syllable and position within the intonation boundaries (expressed as number of syllables), but many others as well. the durations of phones and relevant features are known for the training set and this set is thus the basis for prediction of duration for all other phoneme instances. automatic prosody generation in a text-to-speech system for hebrew 473 fig. 3 the first 3 levels of the regression tree used for estimation of phone duration the tree branching is performed as follows. all the possible yes/no questions based on the selected features (e.g. "is the phone stressed?", "is the distance to the nearest phrase break more than 3 syllables?" etc.) are evaluated for each phone instance in the training set. every question splits the starting n phoneme instances ("root" node) into two distinct subsets ("child" nodes) based on the answer (yes or no), and every question generally splits the set differently. the most relevant question is the one that reduces the total diversity (in terms of duration) of both "child" nodes to the greatest possible degree. at this point, the initial node is split into two "child" nodes based on the most relevant question (e.g. "is the phone stressed?"), and the procedure is recursively repeated for every descendant node, until the tree is fully branched. every terminal node ("leaf" node) is assigned a value – the average duration of all instances assigned to that node. the final tree usually contains multiple phoneme instances assigned to each "leaf" node. although the branching procedure is very computationally complex, the final use of the tree is exceptionally simple and fast. during the synthesis phase, the instance of the phone with known answers to all the relevant yes/no questions is propagated through the tree – from the root node to one of the leaf nodes. the exact path to the leaf node and the final node itself depend on the answers to yes/no questions. the estimated phone duration is the one assigned to the "leaf" node during the training phase (average duration for all the instances assigned to that node). as an illustration, fig. 3 shows the first 3 levels of the regression tree for the prediction of phone duration. the number within the node indicates the occupancy, i.e. number of phone instances within the node. the module for automatic prediction of prosodic features of the synthesized speech based on the regression trees for the hebrew language is trained on the speech database which consists of approximately 4 hours of speech from one professional speaker (the same database is used for synthesis). the database is annotated for phone boundaries and 474 b. popović, d. knežević, m. seĉujski, d. pekar phonological content, which corresponds to the phonological inventory of modern israeli hebrew. some phones are split into subphones (such as occlusions and explosions of stops and fricatives). stress is also marked (primary and secondary). for the purposes of cart training, the database is marked for a number of prosodic events including types and levels of intonational phrase boundaries (up, down; none, weak, medium, strong, very strong) as well as levels of emphasis (very weak, weak, neutral, strong, very strong). regression trees are trained for duration, energy, the value of f0 and its derivative, log ratio of f0 values at 1/4 and 3/4 of the duration of a vowel, as well as log ratio of f0 values between two successive vowels (measured at 3/4 of the duration of the first vowel and 1/4 of the duration of the second one). energy and durations are directly obtained, while the final f0 curve is derived from the outputs of the 4 f0-related trees. a total of 600 different criteria (yes/no questions) are taken into account during the process of regression trees branching. these criteria are defined based on the phonetic context, type of phoneme, phoneme position within a word, the corresponding word’s position within the sentence, etc. a number of compound criteria are also used (e.g. "is the phone vowel and stressed?"). in this case, with a training corpus of approximately 4 hours of speech, the maximum number of levels in the trees was 11. however, it should be pointed out that this value is, in general, greatly dependent on the criterion used for stopping the branching procedure (e.g., a number of instances in the node is less than some predefined threshold, or the reduction of the impurity of the node has been reduced by branching by a value which is less than some predefined threshold). after the trees have been built, at synthesis time, the expert systems analyze the input text and attempt to recover the correct reading for each word in it. by doing so, they recover the symbolic representation of the desired prosody for the input text, including the positions of stressed syllables as well as types and levels of intonational phrase boundaries and levels of emphasis for each word. these features exactly correspond to the features used in cart questions, and will be used for “passing” each phoneme of the input sentence down the tree, thus providing the acoustic representation of the desired prosody. after the acoustic representatives of prosody have been generated, segments used for speech signal synthesis are selected. the basic unit on which the segment selector operates is a half-phone. half-phones that are selected as candidates to be used for concatenation are assigned concatenation and target costs. a trellis structure is formed and the viterbi algorithm is used to find the optimal path (half-phone sequence) through the trellis, i.e. the one with the minimal accumulated cost. the cost assignment is performed based on multiple criteria, which can be classified into two basic groups: target criteria and concatenation criteria. the target criteria determine the mismatch between the acoustic features of the candidate half-phone and the required prosodic features, and express it through target cost, which is thus the measure of the unsuitability of the phonetic segment for being used in actual synthesis. the features taken into account for target cost are duration, f0 and its derivative, as well as energy. on the other hand, the concatenation criteria determine the cost of concatenating any two half-phones [10]. the quality of the synthesized speech greatly depends on the frequency of concatenation points, as well as the audibility of each of them. the concatenation cost, assigned to any ordered pair of half-phones, is defined as the measure of their acoustic mismatch at concatenation points and thus their incompatibility for being automatic prosody generation in a text-to-speech system for hebrew 475 concatenated. for pairs of half-phones which are adjacent and in the same order as in the speech database this cost is equal to zero, which means that such pairs of segments will, whenever possible, be selected for concatenation. in other words, the basic units for synthesis are thus, in fact, not limited to half-phones, but can include strings of halfphones of unlimited length. in practice, the strings of half-phones selected for concatenation are mostly between 3 and 5 half-phones long. the speech signal synthesis module performs signal concatenation. this module is based on the time-domain pitch synchronous overlap and add (td-psola) algorithm, as implemented previously in [11]. the outputs of the prosody generator module and the segment selection module are used as inputs for the concatenation module. since it is impossible very unlikely to have the segments that ideally match the prosody requirements, it is usually necessary to additionally adjust the selected segments as regards their durations, f0 and/or energy. 5. the quality of speech it should be noted that there are several independent sources of the differences between the prosody of synthesized speech and the prosody of natural human speech. besides the intrinsic variability of speech prosody (the fact that no speaker will pronounce the same utterance twice in the same way, and that a wide range of the values of prosodic parameters can be considered acceptable), there are two major factors that affect the accuracy of synthetic prosody. firstly, any error in morphologic annotation (and thus stress assignment) or the assignment of some other prosodic event such as phrase break or emphasis will lead to an error at the input of cart based prosody predictor. this would inevitably result in audible prosodic errors. on the other hand, even in cases when the input to cart is quite accurate, the output still may be of inferior quality due to corpus tagging errors (largely eliminated through manual inspection), data sparsity (insufficient training corpus size), inadequately estimated feature set or simply the intrinsic inability of the cart technique to adequately cover all the peculiarities of spoken language. the errors introduced by cart are most often less audible, and the final outcome is an intonation contour characteristic of accurate, albeit somewhat emotionless speech. the evaluation of the proposed automatic prosody generation module was carried out through the perceptual evaluation of the quality of synthesis. within the listening tests, 10 listeners (native speakers with no background in speech processing, text-to-speech synthesis or speech prosody) rated the tts system performance in terms of naturalness of synthesized speech on a scale from 1 (unnatural, robotic speech) to 5 (speech with apparently natural prosodic features). the listeners were presented with examples of synthesized speech using either the proposed cart-based generator or its previous version based on an expert system implementing explicit rules governing prosodic features. the utterances (a total of 20) were not marked, and their ordering was varied. the average score given to the cart-based system was 3.9, as opposed to 3.5 given to the rule-based version (the corresponding standard deviations were 0.39 and 0.41 respectively). figure 4 shows a comparison of three fundamental frequency contours for the sentence 'תיטמוטוא הארקה תכרעמ תועצמאב תעמשומ תאז העדוה', corresponding to the utterance as rendered by the native speaker (blue), referent system [5] (grey) and 476 b. popović, d. knežević, m. seĉujski, d. pekar proposed system (green). the three contours have been manually time-aligned to the utterance as rendered by the human speaker (indicated by the waveform and the phonemic labelling). it can be observed that the intonation curve as generated by the referent system seems quite regular, unlike the curves corresponding to the native speaker and the proposed system, which seem to exhibit more variation. furthermore, it can be seen that a much greater percentage of frames in the speech signal generated by the referent system were identified as voiced, in comparison to the other two systems. this is related to the characteristic buzziness present in the speech signal generated by the referent system, which (together with a rather monotonous intonation) was one of the major drawbacks of the referent system as reported by the listeners. however, most listeners also reported that the intonation contours of both synthesizers are adequately related to the positions of stressed syllables. 6. conclusion by using the expert system in combination with cart the quality of synthesized speech is considerably increased. based on the results of the listening tests, the system described in the paper provided much more natural-sounding speech when compared to the previous version of the system, in which the prosody was estimated using the expert system. an additional benefit of automated prosody generation is in the fact that such an automated system can be adapted to different dialects of the hebrew language much more easily and in much less time than the expert system. namely, covering a different dialect fig. 4 fundamental frequency contours for an example sentence, corresponding to the native speaker (blue), referent system [5] (grey), and proposed system (green). automatic prosody generation in a text-to-speech system for hebrew 477 of hebrew would require that a new speech corpus be recorded and tagged, and that the automatic training procedure be repeated, which is still widely considered to be far simpler than discovering new sets of expert rules related to prosody. the quality of synthesized speech could be further improved by widening the set of relevant questions as well as by improving the segment selection and signal concatenation modules. acknowledgement: this research work has been supported by the ministry of education, science and technological development of the republic of serbia, and it has been realized as a part of the research project tr 32035. references [1] j.p.h. van santen, "contextual effects on vowel duration", speech commun., 1992, vol. 11, no. 6, pp. 513-546. [2] m. seĉujski, n. jakovljević and d. pekar, "automatic prosody generation for serbo-croatian speech synthesis based on regression trees", in proceedings of the 12th annual conference of the international speech communication association, 2011, florence, italy, pp. 3157-3160. [3] ö. öztürk and t. çiloğlu, "segmental duration modelling in turkish", in proceedings of the 9th international conference on text, speech and dialogue, brno, czech republic, lect. notes comput. sc., springer, 2006, vol. 4188, pp. 669-676. [4] a. lazaridis, p. zervas, n. fakotakis and g. kokkinakis, "a cart approach for duration modeling of greek phonemes", in proceedings of the 12th international conference on speech and computer, 2007, moscow, russia, pp. 287-292. [5] d. kamir, n. soreq and y. neeman, "a comprehensive nlp system for modern standard arabic and modern hebrew", in proceedings of semitic’02, the acl-02 workshop on computational approaches to semitic languages, 2002, acl, stroudsburg, pa, usa, pp 1-9. [6] n. chomsky, morphophonemics in modern hebrew. routledge, 2012. [7] j. fellman, "concerning the "revival" of the hebrew language", anthropol. linguist., may 1973, vol. 15, no. 5, pp. 250-257. [8] b. popović, m. seĉujski, v. delić, m. janev and i. stanković, "automatic morphological annotation in a text-to-speech system for hebrew", in proceedings of the 15th international conference on speech and computer, pilsen, czech republic, lect. notes comput. sc., springer, 2013, vol. 8113, pp. 319-326. [9] l. breiman, j.h. friedman, c.j. stone and r.a. olsen, classification and regression trees. chapman & hall/crc, boca raton, london, new york, washington d.c., 1984. [10] a. black and n. campbell, "optimising selection of units from speech databases for concatenative synthesis", in proceedings of the 4th european conference on speech communication and technology, 1995, madrid, spain, pp. 581-584. [11] v. delić, m. seĉujski, n. jakovljević, m. janev, r. obradović and d. pekar, "speech technologies for serbian and kindred south slavic languages", adv. speech recognition, chapter 9, 2010. instruction facta universitatis series: electronics and energetics vol. 33, no 1, march 2020, pp. 83-104 https://doi.org/10.2298/fuee2001083v © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd universal microprocessor controlled power regulator with and without additional power supply  vladan vučković 1 , simon le blond 2 1faculty of electronic engineering, university of niš, serbia 2university of bath, department of electronic & electrical engineering, united kingdom abstract. inexpensive microcontrollers allow complex control methodologies for improving well-established technologies such as resistive lighting. in this paper, we present two constructions of a microprocessor controlled power regulator for resistive load of up to 2.5 kw and exemplify its use for the lamps in tesla’s fountain reconstruction project. these are universal power controllers and could be applied to a wide verity of non-inductive loads, but our primary intention was to construct a miniature light regulator with touch sensor for tesla’s fountain. the devices operate using the phase control of the power grid’s alternating current and controlled fade-in to increase lamp longevity. extensive testing shows the device to operate successfully for 2400 hours of continuous error-free operation, to robustly handle high cycling stresses and increase bulb lifetimes by approximately a factor of 7-8. the microcontroller software can easily be adapted for controlling many non-inductive apparatus, like light bulbs or halogen lamps, as well as resistive heating. we also used advanced technologies from other multi-disciplinary areas to complete project. key words: ac voltage controllers, microcontrollers, power regulation, phase control, signal processing. 1. introduction in this paper we present a working prototype of a novel universal power regulator with touch control as part of a complete realization of tesla’s fountain patent. major problem with tesla’s basic construction was mechanical control mechanism for lights that is too much complex and expensive, with potentially huge risk of mechanical failures. due to those problems, we decided to develop solution with no mechanical parts without changing any other details of the original patent. the presented power regulator operates using phase control of the power grid alternating current, and could potentially received april 19, 2019; received in revised form november 10, 2019 corresponding author: vladan vuĉković faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: vladanvuckovic24@gmail.com)  84 v. vuĉković, s. le blond be used for control of a wide range of resistive loads. the prototype device was tested up to powers of 2.5 kw and shown to operate safely. the construction does not require electromagnetic relays or other mechanical moving-parts, so it is very reliable even after intensive use. the embedded microcontroller enables the construction of very complex control programs that could not be accomplished by some other digital circuits, for example counters and timers. the power regulator is universal, so the same hardware could be used in different applications; with only changes required in software. in addition we present a more advanced second iteration of the regulator. here we removed the power supply transformer as well as the opto-triac component replacing it with a power ignition system based on a dual capacitor electronic circuit, and a smaller and cheaper microcontroller. the light control is solved in the same construction: this device can be coupled with a simple metal touch plate instead of classical switch or push button. the result is a miniature device, with not a single moving mechanical part, that could be embedded directly in the core construction of tesla’s fountain. in general, the field of power electronics is the processing of electrical power using a variety of electronic devices. the basic circuit is the switching converter that processes power from the input port and delivers it to an output port achieving regulation via a control port. usually the raw input power passes through several phases until it reaches the final desired stage, regulated sequentially by the control lines. several basic functions in power processing can be achieved in this way. this paper is concerned with ac–ac cycloconversion, specifically converting an ac input to a required ac output with the same output frequency, supplying the desired power through controlling the switch-on time at every ac cycle [1]. the present state-of-the-art is mostly focused on pulse-width modulated (pwm) rectifiers, both single-phase and three-phase, as the preferred way of controlling modern semiconductor power devices. constant-frequency pwm is achieved by comparing a saw-tooth or triangle carrier against a sinusoid to generate pulses of varying width [2]. one of the standard, well-known pwm controlled constructions is the ccm boost converter that can produce any conversion ratio between one and infinity. another is a pwm switched inverter that combines voltage control and frequency control. this inverter uses a fixed voltage dc source where each of the phase legs of the inverter are switched at high frequency and basically operate as choppers. this circuit is widely used in motor controls. here the switching patterns are complex and use sophisticated control electronics, often involving low-cost microprocessors, which is a central idea adopted in this paper. another fundamental concept we exploit is modulation of output waveforms by controlling the switched pulse width for the phase leg. with the pwm technique the primary objective is to determine when to switch on the converter at each cycle to supply the desired output power. for example, an earlier solution uses a spatial pwm controller or an eprom chip to store values that are latterly accessed in real time to determine the optimized switching angles [3]. there have been many multilevel pwm techniques developed in past decades, especially for three-phase three-level (3l) inverters [4]. in our approach we used simplified single-phase input, single-phase output (siso), and ac/ac type cycloconverter for converting one ac power source into another ac power application. ac/dc/ac or ac/ac direct converters are newly developed power switching circuits widely applied in industrial applications, in comparison with other power switching circuits. universal microprocessor controlled power regulator with and without additional power supply 85 although choppers were dominant in power supplies in the more distant past, power ac/dc/ac converters have been common in industrial applications since the late 1980s [5]. as a consequence of developments in semiconductors, new devices such as the thyristor (scr), gate turnoff thyristor (gto), triac, bipolar transistors (bt), insulated gate bipolar transistors (igbt) and power metal oxide field effected transistors (mosfet) have become available. since the 1980s, control circuits have gradually migrated from analog control to digital control [5]. digital power controllers have become an interesting choice in switching voltage regulators for high performance low-cost applications, like microcontroller voltage regulation modules (vrm’s) and other types of portable electronics. for example digital dither is introduced as a means of increasing the effective resolution of digital pwm (dpwm) modules. by using microprocessors, a universal dither generation scheme may be realized, producing patterns of any shape [6]. mathematical modeling for these type of converters has also been given much attention, for example the first order-hold (foh) is a widely accepted method to simulate the ac/ac and ac/dc/ac converters [5]. additionally some practical matrix based iterative techniques have emerged for generating the pwm waveform that are guaranteed to converge. a wide range of calculations can be performed with a low cost microcontroller [7]. in some applications with asymmetric double-edge pwma, complete experimental system comprising a front-end board, an fpga board functioning as an adpwm modulator and an eighth-order analog active low-pass filter board is developed [8]. also, an interesting application for pwm is image processing circuit that performs a directional pixel-state propagation algorithm based on a pixel-parallel architecture, using low-cost devices [9]. in our presented method we choose the ubiquitous microchip pic microcontrollers as the basic processing device [10]. the possibility of precise power control for loads without need for modifications enables many different possibilities in home and industrial applications. the basic principle of the electronic power regulator is well known and is applied in different devices: light control systems, halogen lamp power control, and electric heater control, and many others. in industrial literature for this class of power regulators there exist synonyms like ac voltage controllers or dimmers. the functionality of these regulators is based on output thyristor and triac component characteristics. specifically, these semiconductor components are able to conduct currents up to 40 a with low losses controlled by the proportionally extremely low gate current. when the triac is in the conductive state, it is deactivated only when voltage between the anode and cathode is zero. therefore, if the triac is operated with an ac 220 v circuit, each sinusoid zero crossing turns off the triac. in this context its activation can be controlled over a wide range by turning on at any point in either the positive or negative half-period. the described functionality is the operating principle behind the device presented in this paper. by using microcontrollers to achieve this, compared to other solutions based on digital and analogue circuits, dramatic hardware simplifications, miniaturization, and cost savings can be achieved because calculation for control is computed in software the microcontroller machine program. this philosophy has driven the design of the novel power regulator presented here. however, it is important to note that the complexity of the design is largely dependent on the practical application. our basic intention was to construct exact replica of the tesla fountain, based on his original drawings in patent pending provided by the museum of nikola tesla. instead of the original mechanical control device for lights, we developed two much simpler versions of the electronic control unit that can be programmed to execute exact control functions like original mechanical device granted in tesla’s patent. 86 v. vuĉković, s. le blond the paper is organized as follows: firstly, in section 1 we describe theoretical principles behind the basic power regulator, then described in the following sections 2-4. in section 5 we describe detailed construction of innovative touch sensor power regulator device that works without an external power supply. in section 6 we exemplify use of the power regulator in tesla’s 3d fountain project. this device is in patent pending procedure (serbia’s patent office). finally the overall system and contributions are summarised in the conclusion. 2. theory of operation 2.1. ac voltage phase control we begin by considering the power grid voltage (u) waveform presented in fig. 1. for the simplicity, let us suppose that the load has is non-inductive or capacitive, so there is no phase shift between current and voltage phasors. it is well known fact that capacitive and inductive impedances in electric circuits cause the current to lead or lag the voltage respectively. however this does not apply to a purely resistive loads like the type of lighting solution powered by this device. a) b) fig. 1 (a) power grid sinusoid power transfer in the shaded region (b) half-period of sinusoid the basic assumptions thus are that the current and voltage sinusoids are in phase. in addition the activation of the device is synchronized by a constant delay after the zero values of current sinusoid. dark arrays in fig. 1 (a) show active areas when the device receives energy from the power grid, in this case by virtue of changing the triac to a conducting state in these periods. it is obvious that total power consumption in that situation is less than full (nominal) power consumption. also, it is well known that the energy conveyed to the load is proportional to the active dark region array on the current and voltage time series. thus, the principle of power control is formulated in following way: the power regulation is based on control of the turn-on delays after the zerocrossing in every period of the sinusoidal power grid alternating current. the solution of power control then becomes a time delay control problem that is much easier to solve. to determine quantitative parameters that represent power control we will use a simple model presented in fig. 1 (b). the half-period in fig. 1 (b) is analogue to the halfperiod of power grid sinusoidal voltage. the phase is marked with variable k. the universal microprocessor controlled power regulator with and without additional power supply 87 portion of energy, which is conveyed to the device, can be determined by calculating the fp factor that represents the proportion between dark array and total array under the sinusoid. the fp factor could be calculated by the proportion of the sine function integral in interval [k,] (dark array) and [0,] (full half-period): 2 1)cos( )0cos()cos( )cos()cos( )sin( )sin( 0        kk dww dww fp k     (1) after the integration and rearranging for k we obtain equation (1b): )12arccos(  pfk (1b) this formula enables determination of the time delay, if the desired fp factor is known. using the nominal power grid frequency of 50 hz, and thus a half period relating to 10 ms, we can postulate the required time delay is:  k t *10  (1c) where t is the delay in miliseconds. after the combination of (1b) and (1c) we can postulate a practical formula to determine the time delay in miliseconds if we know targeted fp factor:  )12arccos(10   fp t (ms) (2) by changing the input values in formula (2) we can precisely generate the time delay in one half-period to achieve targeted fp factor. if we change fp from 0 to 1 with constant step value (for instance 0.1 or 10%), and successively apply the formula (2), the following table values are generated (table 1). table 1 time delays according to target fp factor. fp (%) t (ms) 0 10.000 10 7.952 20 7.048 30 6.310 40 5.641 50 5.000 60 4.359 70 3.690 80 2.952 90 2.048 100 0.000 88 v. vuĉković, s. le blond it is clear that the non-linear function for time delay requests that formula (2) must be applied for each value to determine the output value precisely. but in real time applications it is not suitable to use the formula (2) in its original form because the inverse cosine function is computationally expensive. thus for speed, every equidistant value in table 1. is pre-memorized in microcontroller hash memory in a look-up hash table. this approach has an excellent trade-off between access time and functionality and thus frees up the microcontroller processor for sophisticated control tasks. it is possible to increase the precision by decreasing the step size between values, but this would then increase the numbers of elements required in the hash table. in addition linear interpolation between values could be used to achieve better granularity of the target fp (%) factor. however the granularity in table 1 produces sufficiently smooth evolution of the light output. from table 1., it is obvious that the difference between neighboring values is the most exposed near the beginning and the end where the sinusoid has the steepest gradient (fig. 1). 2.2. controlled fade-in for bulb longevity immediately after turn-on, the temperature of the metal in light devices is low, so the resistance is low, causing a high transient current impulse. the impulse current is up to ten times greater than nominal steady state current. for instance, one 100 w incandescent lamp has an initial electrical resistance of 39. if it is connected to the 220 v power grid, the ignition current will be over 5.6 a. this high current impulse places great stress on the light bulb filament, and as such, devices usually malfunction during this initial turn-on period. to overcome this, the microcontroller can be used to power up the lamp gradually, starting not with 220 v but with a factor of ten lower voltage, approximately 20-25 v. by calling a special function on turn on, the microprocessor generates an initial output wave shape that first gently heats the metal filament in the bulb to red incandescence. this is achieved by gradually decreasing the time delay of the triac gate excitation in every period, up to the delay corresponding to desired fp factor. when red incandescence occurs, the resistance is 70-80% of the maximal resistance, so after the turnon, the current jump is only 20-30%. so rather than an initial starting current of 5.6 a the starting current is reduced to around 0.45 a. the whole process takes around 1 second so does not inconvenience the user, merely produces a pleasant but rapid fade-in effect. following this, the microprocessor turns on to full power. this gradual fade-in process prolongs expected lifetime of the light bulbs by factors of 5-10. 3. microprocessor controlled continual power regulator based on theoretical discussion in the previous section, we now describe the technical solution that will enable power regulator construction. 3.1. subsystems the description of the functionality for the sub-systems with component characteristics is also presented (fig. 2). universal microprocessor controlled power regulator with and without additional power supply 89 fig. 2 the block scheme of the power regulator fig. 2b the gretz bridge rectifier, capacitor and stabilizer (standard circuit)  output subsystem – power component triac bt 139-600 is used. this triac can carry alternating currents up to 16 a rms maximum steady state current. thus the maximal power that can be controlled by the device is about 3.5 kw (for the nominal voltage 220 v) but is limited to 2.5 kw to give a wide safety margin. when high current values are present, the triac must be equipped with a metal heat sink to dissipate the ohmic heat.  microcontroller – the whole device is organized around the microcontroller pic16f8 which is the central functional part executing the control algorithm. the algorithm can be described in following steps: 1) using the zero crossing detector, determine the start point of the half-period for alternating power grid current and reset the timer. the triac is inactive in this moment due to the input voltage zero values. 2) determine the delay constant in milliseconds using the value of the target fp factor. use the hash look-up table in table 1. for fast approximation of the function (2). 3) after selected delay, turn-on output switch unit (triac). 4) wait for triac activation time; a few hundred of microseconds depending on component type. 5) turn-off (gate) triac. at that point the input voltage is still non-zero, so the triac will continue to conduct. 6) goto 1) 90 v. vuĉković, s. le blond the central component microchip pic16f84 was chosen for the device [11],[12]. this microcontroller is perfectly suitable due to its functionality, adaptability and low cost. the processor is clocked with a 4 mhz crystal oscillator that enables stable and accurate time cycles.  electronic coupling unit – is accomplished by using the opto-triac component moc 3020. its breach voltage is about 7.5 kv. the optoelectronic component is controlled by the processor from the input side and it generates gate excitation current for triac as the output. this unit enables galvanic decoupling from the 220 v power grid giving high levels of protection for the sensitive low voltage electronic components.  the electronic circuit for zero-crossing detection – uses the alternating signal from the secondary of the 220 v/6 v transformer that energizes the microcontroller (via 7805l stabilizer to limit the input voltage to 5 v). this simple solution is used as simple, safe and sustainable solution. when the signal rises above 2.0 v the microcontroller reads this as a logical 1, and when it falls below 0.8 v a zero. compared with power grid current, the signal has opposite phase but the same frequency so it can be used for realization of the 1) step in the main algorithm.  rectifier – standard gretz bridge rectifier which also uses electrolytic capacitor 470 f and stabilisator 7805 enabling +5v dc for microcontroller, shown in fig. 2b. to ensure protection of the sensitive electronic components, the device is galvanically isolated from the mains between a and b line (fig. 2). line a decouples the microcontroller from power power grid by power transformer and line b decouples it from the output power circuit by optoelectronic component. 3.2. device operation the block scheme of the device is presented in fig. 2. the construction of the device is compact so it can be embedded on a 3x5 cm wafer. it possesses many useful technical characteristics and is proven to be very reliable in challenging use scenarios. to begin with, the microcontroller part of the device is galvanically decoupled from one side with transformer (a), and from the other side with opto-triac (b). also, it is grounded separately, enabling very high level of resistance to power grid overvoltages and currents. by virtue of the online zero crossing detection, the regulator can accommodate small power grid frequency changes, ensuring that the delay in triac activation is always from the actual measured zero crossing rather than the ideal 10 ms delay. it is well known that in practice power grid frequencies vary somewhat around the nominal 50 hz (or 60 hz in other regions). for example, at times of high load and excessive consumption, the power grid frequency has a tendency to decrease as there is less kinetic energy stored in the prime movers of generators. the embedded microcontroller solves this problem because it constantly, period by period, measures successive zero-crossing points, so that all corrections to changes of frequency are achieved in real time and the device remains synchronized to the power grid. for programming of the microcontroller, the assembly language development environment was used. the light controller has an original construction that surpasses similar devices in its class. it possesses all characteristics that are well known for this type of device and also has a set of new advanced functions. universal microprocessor controlled power regulator with and without additional power supply 91 some of the key characteristics of the device are specified:  microcontrollers and integrated technology are used for the construction of the device. this implementation attains high functionality and reliability with low power consumption and low costs. the basic circuit is a pic 16f84 microcontroller which is widely produced at low cost. the construction does not employ components with mechanical moving parts like relays, so the probability of malfunction decreases.  integrated technology enables the development of the device onto compact 3x5 cm one-side wafer which can be energized with normal line transformers.  the light power regulator generates an alternating signal that could power a small guide light source enabling much easier location of the switch fitting in darkness.  maximal output power is over 25 kw (16 a). with a heat sink the device was tested successfully up to powers of 1800 w (equal to 30 parallel connected 60 w light bulbs). the main circuit must contain only resistive based lighting: i.e. light bulbs or halogen lamps.  if the push button is pressed in the active phase, the turn power turn-off is delayed until the inactive phase. 3.3. device testing after a construction of the industrial prototype that possesses all characteristics and components of the final version of the device, we have performed comprehensive testing of the device to check all defined functions in normal and extreme working conditions. test sets are equivalent to both design versions of our device.  continual testing – the device continually worked in long periods of time. after a few months of permanent testing the device retained all nominal and projected parameters, so this test was successfully passed.  test of output power – large thermal loading was connected to the output – heaters up to 2 kw, emulating a large number of lighting bulbs in parallel connection. the device managed this loading without problems, although these tests indicated that the metal heat sink is required at very high loads. as the maximal nominal output power for the embedded type of triac is 16 a, the output fuse must be scaled accordingly to only rupture before the triac is damaged by short circuit current, but not rupture under normal high load conditions.  shock test – using another microcontroller connected to a relay, a series of voltage shocks were emulated across a broad range of possible instantaneous voltage values (from the 220 v waveform) and frequencies of switching. the tests proved that the prototype device is resistant to high instantaneous peak power grid voltage and high cycling stresses, preserving stable performance in the presence of both. 4. microprocessor controlled continual regulator without additional power supply in this section we will present the advanced version of power regulator developed after extensive testing of the previous initial prototype. the power transformer supply as well as opto-triac component are removed from the construction, reducing the cost and size. here we use an 8-pin pic12f675 microcontroller instead of standard 18-pin pic 92 v. vuĉković, s. le blond 16f84 in the previous iteration. the touch control sensor circuit is achieved within the same device. we discuss the principle of the operation of microprocessor controlled switch without additional source of the power supply, shown in fig. 3. fig. 3 operational principle in electrical circuit and functions the microprocessor controled continual regulator and the switch without additional power supply contains microcontroller (mc1), switch component (tr1), restricted current capacitor (c1), restricted impulse power supply resistor (r1), diodes for current routing (d1) and (d2), stabilization and filtration voltage power supply components (zd1) and (c2), resistor for synchronisation with the power grid voltage (r3), extrusion capacitor for synchronized interferances (c4), capacitor (c3) and resistor (r2) for excitation voltage restriction of the switch component (tr1), capacitor (c7) and resistor (r6) for the power grid interferances and input circuit components (cp), (c6), (r5), (r4), and (c5), emphasized by the fact that the device is using power supply current running through the load (s) in such a way that the whole device obtains voltage and is syncronized by parallel wiring with its switch component. the contact plate (cp), through which the user activates the device, can be of any design and made of any conducting material, though it is desirable that the conductor is as warm as possible. this contact plate should have sufficient mechanical strength to ensure the switch can be fastened on the wall. on the back side of the contact plate it is desirable to fasten the metal heat sink of the triac (tr1), so that the device can dissipate heat accumulated when handling heavy loads. the contact plate must be electrically insulated from the wall by plastic or some other strong insulating material, so that the wall does not conduct signals to or away from it causing interference in the device’s operation. 4.1. powering the microprocessor the functional heart of the device is the microcontroller (mc1). in this case michrochip`s microprocessor pic12f675 was used, because of its size and overall performance. from a hardware perspective, the main problem is securing enough electrical power for the microcontroller in order that its program would perform without interruption. in the boxes in the wall that are usually used for installing the switches there are two different potentials: live wire and the potential of the bulb (point a potential). it is therefore universal microprocessor controlled power regulator with and without additional power supply 93 necessary to supply the device with a small amount of the current that runs through the load s (the bulb). when the switch (triac tr1) is turned off, the potential at point a is 0 v. in this case it is not difficult to provide the power supply for the microcontroller, first by the restriction of current with the resistor r1 or capacitor c1, and then by the stabilization of the voltage. problems can occur when the triac is in the on state, because then both potentials in the switch box are at the live wire potential, in such a way that all voltage transfers from the switch to the bulb. the problem of the voltage loss of the microcontroller (mc1) is solved by use of the triac (tr1) and by choosing the correct moment to turn on by mc1’s program. so as not to leave the microcontroller without the power supply under certain conditions, it is necessary to ensure that the triac (tr1) never turns on at the beginning of the semi-period, but only in the moments when the average current of the device supply, of that period, exceeds the average power consumption required by the microcontroller. this problem is addressed by the microcontroller (mc1) itself. stabilization and filtration of the voltage of the power supply is performed by parallel connection of the zener diode (zd1) and the capacitor (c2). capacitor (c2) is filled over the diode (d2) in the time intervals when the rate of change of voltage is dufa / dt < 0. diode (d1) is used to pass through the current through the capacitor (c1) in intervals when the rate of change of the voltage dufa / dt < 0, in order that it would be possible to recharge capacitor (c2) when the rate of change of voltage dufa / dt again becomes bigger than 0. in the circuit of fig. 3 the restriction of the current by regular connection of both capacitors and resistors is chosen, because of the incomparably smaller dimensions and losses possible in comparison to (restriction) through resistors alone. the capacitor c2 must be sized to ensure the average required current of the mircocontroller of 1.5 ma is continually supplied by only turning on the triac after the first sixth of every semi period. by the end of the first sixth of every semi-period, on power grid effective voltage of 230v (amplitude 310v) based on formula, a sufficiently sized capactior will be: u ti c k    (3) where vvuu m 1555.0*310 6 sin   , and the semi-period ms t t 10 2  . 1.5ma 10ms 100nf 155v c    (4) the dimensions of the capacitor from 100 nf/400 v are relatively small, and since active power on them gravitates towards zero, no warming occurs. during the process the difference in the light level is only slight (negligible) when the triac is turned on in the end of the first sixth of the semi-period, compared to turning on of the triac at the beginning of the semi-period. 94 v. vuĉković, s. le blond 4.2. touch detection switch one of the main advantages of this switch is the detection of touch instead of pressure, in such way that it is possible to make it very firm and very sensisitive at the same time. to excitate this device it is necessary for the user to make physical contact with the contact plate. touching of the contact plate is detected by the microcontroller into pin gp1, producing a sequence of logic zeros and ones with the frequency of the input power grid. based on the time duration of the user touching the contact plate, the moments of the turning on of the triac is updated in the microcontroller's program. maximal electricity which can be conductuted by the control plate is determined by capacitor values c6 and the resistor (r5), so that it can be calculated by the following formula: fc r u i ef ef 2 1   (5) the capacitor value c6 is not bigger than 220 pf, and the resistor value r5 is not less than 1 m . the penetration voltage of the capacitor c6 must be tested and guaranteed by the manufacturer and must not be less than 630 v, although it is desirable to be multiple stronger for the user`s safety.with these limit values and the voltage of uef = 220 v, the maximal effective current will be ief max = 14 a which that cannot be felt, or have any kind of the negative consequences for the user. even in the event of capacitor short circuit failure the maximum current would be limited by the resistor alone to 0.63 ma. the prototype regulator was tested and certified for safety and found to be completely safe. 4.3. triac exitation current of over 20 ma is necessary for the safe excitation of the triac (depenant on the triac type) which is achieved through r2 and c3. for a smaller size of resistor for the current limitation, a smaller capactior value must be adopted. a reasonable size capacitor could be 100 nf/400 v (as in the previous example). however, maximal available current is 1.5 ma with such a capactior. that is why the excitation of the triac is achieved through capactior c3 as follows: a) in the semi-period, when the live wire potential is negative, the microcontroller output (g4), at the moment of traic activation, transits from the logic zero state to logic one, thus sending short-term positive current toward the triac gate. the value of the current is determined by resistor r2, and must large enough to allow successful triac excitation. b) in the semi-period, when the live wire potential is positive, the micro ontroller output (g4), at the moment of traic activation, transits from the logic zero state to logic one, thus sending short-term negative current toward the triac gate. the value of the current is determined by resistor r2, and must large enough to allow successful triac excitation. by this way of triac excitation, the average current of the gate is greatly reduced, to around 100 a. one of the conditions for the precise determination of the moment of turning on of the triac is the use of one microcontroller's input (gp2) for continual zero crossing detection and thus the power grid voltage synchronisation. the signal is delivered through resistor r3, while capactitor c4 eliminates interferances which would eventually appear on that input. the triac must have a galvanically isolated heatsink comprising of pins connected to the contact plate. the triac used in this device is bta16/600, and its heatsink within the triac is guaranteed by the manufacturer. it must have a penetration voltage of over 2.5 kv. universal microprocessor controlled power regulator with and without additional power supply 95 5. final device prototype this section presents further details of a new microprocessor controlled continual regulator practical realization (fig. 4). this device is a result of several year`s development and testing. as we have presented in previous sections, there are many original and new aspects to its hardware, making it unique device in many aspects. nevertheless, the construction remains simple and very easy to manufacture. fig. 4 device prototype the purpose of this section is to briefly highlight some important features of the device:  the device has potential to completely replace today’s classic wall switches and dimmer switches for incandescent and halogen light bulbs.  the device is built around extra efficient and small eight pin chip microcontroller. the microchip pic12f629/675 is used. the embedded control program is relatively complex (see appendix b for assembly code), but only about 40% of the total program memory is used, allowing a lot of space for future software expansion. therefore, it has high level software flexibility.  the embedded program uses advanced control algorithms. among other functions, the device has program control of the sinusoidal fade-in (fig. 5) and fade-out output voltage, power saving control mechanism and automatic shutdown after predefined time period. the list of the functions could be easily expanded if the manufacturer has additional requirements. 0 0.2 0.4 0.6 0.8 1 1.2 1 9 17 25 33 41 49 57 65 73 81 89 97 o u tp u t p o w e r p .u . time, 1x10-2 s fade… fig. 5 fade-in output effective power diagram 96 v. vuĉković, s. le blond  the device does not use transformation units for power supply. it has original power ignition system based on dual capacitor electronic circuit. the device is connected directly to the 220 v electric power grid only via two pins. the connection scheme is presented in the following picture (fig. 12): fig. 6 simple connection scheme it should be noted that the connection scheme is extremely simple; in fact it is the same as the classic installation. therefore, existing installation for ignition of the lights can be used; the change of the wall switch is the only requirement.  it has no mechanical moving parts like relays, levers, or rotating pots that could easily break. it is completely made of electronic components on single-side printed wafer. instead of the classic switch it uses only thin metal (iron, copper, aluminum or other conductor) layer, connected with special touch detecting hardware. the microprocessor has a special subroutine when controlling this touch sensor. all commands of the user are detected only by a light touch of this layer.  the device has two basic versions of input. it is possible to use classic push button. nevertheless, the main version of the prototype uses touch sensor. the cpu program handles both variants. after one touch, the device goes into the fade-in program. the output voltage slowly rises from 20-30 v to approximately 95% of the nominal voltage (around 210v). at any point of this process, device could be paused, maintaining the current power level, again only by one touch. this level is memorized into the internal non-volatile eeprom memory, so if the current power grid power supply is lost, the level will be recalled on the next energization. also, when the user wants to turn-off the lights, one touch is enough – the device will go into the slow fade-out. these functions are in complete harmony with modern power-saving regulations.  in contrast to classic switch, that has only two power levels (on and off), the new device has many possible levels, between 0% and 95%. for instance, if someone has 100 w incandescent bulb, using this switch, that person could adapt all standard powers 25 w, 40 w, 60 w, 75 w, but also nonstandard 10 w, 33 w, 67 w, 80 w etc. also, precise fade in and out procedures visually look attractive. the maximal power is about 95%, so the device constantly saves power even at maximal output.  the gradual fade in control program significantly extends the lifetime of standard incandescent lamps by a factor of at least 7-8 according to our observations.  the output power component which is used has maximal 16 a current. in our system when a sensor metal layer is used at the same time as a heat sink, being a standard configuration, the output power above 1 kw is easily reached. we have tested the device under 700 w output power for a few months and its performance universal microprocessor controlled power regulator with and without additional power supply 97 was excellent. if 1 kw is loaded (for instance two 500 w halogen lamps in parallel circuit), after around 20 minutes the temperature of the touch sensor is slightly increased, but all functions still remain the same.  the device has very useful characteristic of universality. by changing only the microcontroller’s program it is able to serve as:  standard wall switch for room lamps,  alternating switches,  cross switch,  time relay,  classic push button.  if it is necessary to turn on one or more parallel connected incandescent light bulbs from the different switch location (for instance n places), the current system needs 2 alternating and (n  2) cross switches to comply. by using this device there will be need only for one switch unit and n  1 metal sensor layers (coupled with one capacitor and resistor), parallel connected. this solution is therefore much simpler and cheaper.  the device signals the normalization of the power on 220 v power grids by shortly turning on and off output lamps using minimal power. if the device is at certain power level, after the power grid power incidentally goes on and off, the device resets in the turn-off mode.  the latest versions of the industrial prototypes of the device have been intensively tested in areal working environment for a few months continually, maintaining perfect operational functionality. the master device prototype has had around 2400 hours of continuous error-free operation.  device dimensions are 33x24 mm, the height is 24 mm. the other important device characteristics are systematized in the following table 2: table 2 key device characteristics temperature range -20 do +70 o c maximal output power > 1000 w power loss (output power is off) < 100 mw power factor (output power is off) 0.028 supply current (output power is off) 14 ma maximal enabled power grid voltage > 440 v permeable voltage (toward user) 2500 v maximal sensor current (toward user) 10∙10 -6 a device temperature (p=700w, tamb=20 o c) 60 o c type of pertinex plate one-sided dimension of the pertinex plate 33 mm x 24 mm 98 v. vuĉković, s. le blond 6. tesla’s fountain the project ―computer simulation and 3-d modelling of the original patents of nikola tesla‖ in cooperation with ―nikola tesla museum‖ of belgrade, which represents an institution of national importance, was started in 2009. the main purpose of the project is to digitalize, visualize and reconstruct (with real models) the original legacy of the museum [13], [14], [15]. this research was conducted in the project entitled ―computer simulation and modelling of the original patents of nikola tesla‖ and approved by the ministry of education, science and technological development of the republic of serbia [15]. the first of tesla's patent that was studies was tesla’s fountain patented as tesla’s fountain, no. 1,113,716, us patent office, granted oct, 13, 1914 (fig. 7). the first achievement on this project was a 300.000 particle 3d model of tesla’s fountain (fig. 9). the applications used are 3ds max, adobe photoshop, realflow, v-ray, microsoft visual studio c++. then, we used different tools to generate digital model of tesla's fountain in various configurations and environments. this work was conducted with a team of professors and students from the electronic faculty, who have been are assembled together with professional experts from the museum. we used original construction schema from museum (fig. 8) to generate first 3d model of tesla’s fountain. fig. 8 tesla-tiffani original fountain construction (museum of nikola tesla heritage) fig. 7 original tesla’s fountain patent universal microprocessor controlled power regulator with and without additional power supply 99 the original construction indicates the solid materials for basic structure is comprised of metal. the main idea in the patent is to use just one induction motor to generate water flow against gravity and to run the complex light control mechanism using the mechanical gearing (fig. 8). our first innovation was to alter the basic material to glass [16] (fig. 9). fig. 9 tesla's 3d fountain model in glass the tesla fountain in glass has advantages for research and development of the inner structure as well as aesthetic benefits. after the initial structure modelling, we concentrated on a problem of light control. in his original patent (fig. 7) tesla used multi-colour filters to generate interesting colour effects in fountain water flow. we implemented this original idea in our model (fig. 10): fig. 10 tesla fountain in glass with colour filters (detail) 100 v. vuĉković, s. le blond to run this colour filter system on the top on the fountain, tesla proposed a complex mechanical system with differentials, similar to a clock mechanism. this unit reduces the high rotational speed of the main induction motor which also runs the water pump on the same axis (fig. 7). our model follows this part of the original construction also (fig. 11). fig. 11 tesla fountain with mechanical redactor system this mechanism is embedded in the central part of the fountain, out of water flow and above the main water level in the reservoir. it is integrated with a colour filter (fig 12). fig. 12 tesla's fountain with mechanical system (detail) after the animation of the model, the main invention is presented visually, using one induction motor work to pump water and at the same time connected via mechanical differentials to run the colour filter, whose speed is proportional to the water flow. after the modelling and simulation, the next step is to build the real construction of the model [16], [17]. using current technology, it is easy to manufacture the basic structure using 3d printers. however the main difficulty is to produce the mechanical parts which far universal microprocessor controlled power regulator with and without additional power supply 101 outstrips cost of producing the rest of the basic construction. for this reason it was decided to substitute the whole mechanical part with a static colour lamp controlled by a microprocessor device that is in the main innovation presented in this paper. 7. conclusion this paper presents theoretical and practical realization of the two versions of universal power regulator for tesla’s fountain. the power regulation device comprises hardware and software part designed using the microchip pic 16f84/12f675 development system and other applications, going through the different design phases discussed. the main intention of this paper is to develop complete substitution for the mechanical light control part of the tesla fountain. the further research efforts proved that general use of our solution was possible for a variety of loads.. the processor does not require supporting memory and peripheral integrated circuits which enable realization of the device with very low component and small physical footprint. using the power regulator with non-inductive light sources like light bulbs and halogen lamps, it is possible to regulate the light intensity. however the power regulator may have other uses, such as in the case of electric heaters it is possible to regulate the temperature by controlling the heater current loading. the authors’ intentions are to develop further applications and modifications starting from the basic concept described in this paper. acknowledgement: this paper is supported with iii44006-10 project of the ministry of education and science republic of serbia and museum of nikola tesla in belgrade, serbia. authors also want to thanks to eng. dragan tošić, who is co-owner of the patent pending for the construction of the advanced michochip 12f675 microprocessor device. appendix a detailed computer model and simulation of the device is also developed in autocad application. that model is used to generate following pictures: fig. 13 blueprint of the device dimensions are in millimeters fig. 14 3d models of the device 102 v. vuĉković, s. le blond fig. 15 3d models of the device (different views) fig. 16 method of sensor layer, device and plastic case assembly into the wall switch box (front view) fig. 17 method of sensor layer, device and plastic case assembly into the wall switch box (side view) fig. 18 first version of the device prototype. tested for over 2400 hours fig. 19 last version of the device (industrial prototype) universal microprocessor controlled power regulator with and without additional power supply 103 fig. 20 illustration of the device’s miniature size fig. 21 side view of the device fig. 22 compact solution for wall switch appendix b assembly code for microcontroller: 0078 0018 ;-------------------------------- 0079 0018 procedure(periode) 0079 0018 0080 0018 0081 0018 01 96 clearq(kx) ;key buffer 0082 0019 20 15 call wait_low ;synhro 0083 001a 0084 001a 08 22 load(wx) ;wait constant in millisecond 0085 001b 20 0d call wait 0086 001c 0087 001c 16 06 set(portb,triac) ;turn on triac gate 0088 001d 30 0a load.(5*2) ;delay 0089 001e 20 0d call wait 0090 001f 12 06 reset(portb,triac) ;turn off triac gate 0091 0020 0092 0020 30 be load.(95*2) ;delay and wait for second power half-pe 0093 0021 20 0d call wait 0094 0022 0095 0022 16 06 set(portb,triac) ;turn on triac gate 0096 0023 30 0a load.(5*2) ;delay 0097 0024 20 0d call wait 0098 0025 12 06 reset(portb,triac) ;turn off triac gate 0099 0026 104 v. vuĉković, s. le blond 0100 0026 00 08 return 0101 0027 ;-------------------------------- to control “fade-in” procedure repeat call periode function changing delay time (in memory register wx) from its maximal value (minimal output power) to the minimal value (maximal/full output power). this is done through memory register ex loop: 0160 0048 light: 0161 0048 0162 0048 30 a0 mem(wx,maximum) ;warming, 1sec 0162 0049 00 a2 0163 004a 30 32 for(ex,warm,m1) 0163 004b 00 90 0163 004c 0164 004c 20 18 call periode 0165 004d 0b 90 loop(ex,m1) 0165 004e 28 4c 0166 004f references [1] r. w. erickson and d. maksimovic., fundamentals of power electronics, kluver academic publishers, second edition, dordrecht, 2001. [2] j. sun, pulse-width modulation, dynamics and control of switched electronic systems advanced perspective for modeling, simulation and control of power converters, monograph, chapter 2, springer, 2012. [3] d.g. holmes, t.a. lipo, pulse width modulation for power converters—principles and practice, 1st edn. wiley–ieee press, piscataway, 2003. [4] g. grandi and j. loncarski, "simplified implementation of optimized carrier-based pwm in three-level inverters", electronic letters, vol. 50, no. 8, pp. 631-633, 2014. [5] f. l. luo, h. ye, m. rashid., digital power electronics and applications, elsevier academic press, san diego, california, u.s.a., 2005. [6] a.v. peterchev., digital control of pwm converters: analysis and application to voltage regulation modules, m.s. thesis, university of california, berkeley, u.s.a., 2002. [7] j. huang, k. padmanabhan, and o. m. collins, "the sampling theorem with constant amplitude variable width pulses", ieee transactions on circuits and systems, vol. 58, no. 6, pp. 1178-1190, 2011. [8] z. yu, y. fan, l. shi, g. lv, a pseudo-natural sampling algorithm for low-cost low-distortion asymmetric double-edge pwm modulators, springer circuits, systems, and signal processing, 2014. [9] y. kim, t. morie, a pwm-mode pixel-parallel image-processing circuit performing directional statepropagation and its application to subjective contour generation, springer circuits, systems, and signal processing, vol. 34, pp. 605-623, 2014. [10] j. b. peatmann, design with pic microcontrollers, prentice-hall, 1998. [11] pic16c84:8-bit cmos eeprom microcontroler, microchip technology inc., u.s.a., 1997. [12] pic16c84:eeprom memory programming specification, microchip technology inc., u.s.a., 1997. [13] v. vuckovic, a. stanisic, n. simic, "computer simulation and vr model of the tesla's wardenclyffe laboratory," digital applications in archaeology and cultural heritage, vol. 7, pp. 42-50, 2017. [14] v. vuckovic, s. spasi, " 3-d stereoscopic modeling of the tesla’s long island", facta universitatis, series: electronics and energetics, vol. 29, pp. 113-126, 2016. [15] v. vuckovic, a. stanisic, s. le blond, "virtual reality modelling and simulation of the tesla's radio controlled boat", pp. 61-64, 2017. [16] v. vuckovic, v. mitic, lj. kocic, b. arizanovic, v. paunovic, r. nikolic, "tesla’s fountain, modeling and simulation in ceramics technology", journal of the european ceramic society, vol 38, no. 8, pp. 3049-3056, 2018. [17] v. vuckovic, v. mitic, lj. kocic, v. nikolic, "the fractal nature approach in ceramics materials and discrete field simulation", science of sintering, vol. 50, no. 3, pp. 371-385, 2018. facta universitatis series: electronics and energetics vol. 32, no 4, december 2019, pp. 529-538 https://doi.org/10.2298/fuee1904529k © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd classification of electricity consumers using artificial neural networks  dragana knežević, marija blagojević university of kragujevac, faculty of technical sciences ĉaĉak, serbia abstract. this paper explains the process of using neural networks, as one of numerous data mining techniques, for the classification of electricity consumers. the processed data comprised more than a million recordings of electricity consumption for 21,643 consumers over the period of four years and eight months. using a data subset (70% of the entire dataset), the network was trained for the classification of consumers according to the type of the electric meter they possess (single-rate or dual-rate) and the zone they live in (city or village). the network input data in both cases included: consumer code, reading period from-to, current and previous meter reading for both low and high tariff, dual and single rate tariff consumption for that period and their total amount, as independent variables, whereas the network output comprised dependent variable classes (zone or type of electric meter). the results show that a network created in this way can be trained so well that it achieves high precision when evaluated using the test dataset. using the available recordings about electricity consumption, the type of the electric meter consumers possess and the zone they live in can be predicted with the accuracy of 77% and 82%, respectively. these findings can provide the basis for further research using other data mining techniques. key words: data mining, neural network, classification, prediction, electricity, r programming. 1. introduction data mining has emerged as a result of the attempts to find more effective ways of dealing with ever-growing amounts of stored data. the appropriate use of data can be highly beneficial, and data mining is primarily aimed at discovering patterns among seemingly completely unrelated data. depending on the problem that should be solved, the volume of available data, and the format in which results should be reported, one of numerous data mining techniques can be selected. data mining is commonly considered a multidisciplinary field [1], which has been proven by its applications in various areas. it is used for research purposes in economics, for testing security systems and discovering elements that affect their performance [2], for received january 17, 2019; received in revised form june 3, 2019 corresponding author: dragana knežević faculty of technical sciences ĉaĉak, svetog save 65, 32000 ĉaĉak, serbia (e-mail: dknezevic28@gmail.com)  530 d. knežević, m. blagojević education-related purposes [3], for increasing it efficiency and solving problems of storing huge sets of data, as well as the problems of transferring, processing and analyzing data using internet of things [4], and even for making predictions about the risk of falling off a bike [5], or about the result of a football match [6]. furthermore, data mining techniques can be used to analyze electricity consumption in order to design more efficient electric power distribution systems that would meet specific consumers‟ needs [1], or to compare the electricity consumption during different seasons, national holidays, etc. [7]. moreover, these techniques can be used for consumer clustering based on the amount of consumed electricity, taking into account weather conditions and other factors [8], as well as for shortterm and long-term planning and predictions of electricity demand, but also for predictions of potential electricity theft and misuse [9, 10 , 11, 12]. the authors of [13], for instance, developed a model for the detection of two types of illegal electricity consumption (entire or partial) using the combination of classification methods and the levenberg-marquardt method in smart grid. drawing upon the knowledge bases providing information on the existing medium voltage electricity consumers, the authors of [14] endeavored to identify typical characteristics and load profiles of consumers in order to ensure successful predictions and classification of new consumers, whereas the aim of [15] was to perform the classification and categorization of the existing consumers based on the characteristics of the electricity consumption. this paper focuses on the classification of electricity consumers based on two different criteria: the type of the electric meter they possess and the zone they live in. an extremely huge dataset was used for the purpose of the research, exceeding a million recordings, in order to ensure higher precision of the obtained results. such results may serve as a basis and inspiration for future research. one of the greatest data mining challenges is the selection of the appropriate algorithm. unlike other fields (e.g. statistics), data mining allows the simultaneous use of several different techniques, and the applied algorithms are tested using a data subset (commonly referred to as the test dataset) before selecting the one that yields the most reliable results. in this paper, the emphasis is placed on solving the problem of classification using neural networks as a type of supervised learning. the aim of the research is to find out whether neural networks can be used for the classification of electricity consumers based on several different criteria. the very fact that the given classes might not be clearly partitioned, i.e. the fact that they might be intertwined regarding the type of the meters and the zone where they are installed, makes the research all the more interesting. it also makes it more complicated for the algorithm itself to spot and make the differences. 2. methodology the target dataset included the information about electricity consumers on the territory of the city of užice during the period of four years and eight months, i.e. from january 2014 to august 2018. the observed geographical area, i.e. the consumers on the territory under the jurisdiction of the electricity distribution company of the city of užice – ed užice, can be classified into several basic categories. one classification may be performed on the grounds of the place where the meters are installed, i.e. whether they are in urban or rural areas, which is an interesting classification criterion. on the other hand, there are two types of electric meters, classification using artificial neural networks 531 single-rate and dual-rate ones, and the above-mentioned zones usually differ with respect to these types, i.e. most single-rate meters are installed in rural areas, though this is not a rule, not universally true. therefore, it might be interesting to perform such a classification. the target dataset comprised 1,048,575 readings for a total of 21,643 consumers. the analyzed data included: the consumer category, the zone where consumers live, the information whether they possess a single-rate or dual-rate meter, meter readings at the beginning and end of each month for the single rate or both rates, as well as the month (the billing period), and the total electricity consumption for both rates, expressed in kwh. this dataset had a special target variable, which became its class attribute. due to the fact that classes were determined by the user, this type of learning is called supervised learning [16], which implies that the training dataset is used to train a neural network, which is subsequently validated using the test dataset. the data were processed and the neural network created using the r program language, i.e. in the r studio. after importing the dataset into the r studio working environment, and before activating the neural network algorithm, it was necessary to perform the data preprocessing. as the used dataset contained different types of data (numeric data, strings, dates, etc.), the process of data normalization was performed and all the data transformed into numeric values belonging to the 0-1 range, as shown in figures 2 and 3. preprocessing also implied the differentiation between relevant data and those insignificant for the desired analysis, and it was followed by the classification into two groups, the training and test datasets. for the training of the neural network, 70% of the data (734,003 precisely) were selected using the accidental sampling method, whereas the remaining data (314,572) were used for the purpose of testing the model (the test dataset). after the removal of irrelevant and redundant attributes, and the selection of the classification variable, the neural network algorithm was activated. the input data fed into the activation function included: the dependent variable, independent variables, the target set (i.e. the data subset used to train the network), the selected algorithm, the number of neural network training repetitions, the decision whether the output would be printed and how, the threshold value, and the number of hidden layers, if any. while training a neural network, the results were printed and the network diagram, as shown in figure 1, was created, showing the input and output values, as well as hidden layers. moreover, the values of attribute weights in a layer (layers) can be seen. fig. 1 diagram of trained neural network 532 d. knežević, m. blagojević all the data „learnt‟ in the previous process (with the exception of the classification variable) were evaluated using the test dataset. a table containing the predicted and actual values was created, showing the network prediction accuracy. finally, the confusion matrix was used to summarize the values of all correct and incorrect predictions [17, 18]. a typical confusion matrix is shown in table 1. table 1 confusion matrix [17] predicted value actual value classified negative classified positive actual negative tn fp actual positive fn tp tp  true positive: the model correctly predicts the positive class (we predicted „yes‟, and it is „yes‟), tn  true negative: the model correctly predicts the negative class (we predicted „no‟, and it is „no‟), fp  false positive: the model incorrectly predicts the positive class (we predicted „yes‟, but it is „no‟), fn  false negative: the model incorrectly predicts the negative class (we predicted „no‟, but it is „yes‟) [16, 14]. given a confusion matrix, other measures such as accuracy, precision (p) and recall/sensitivity (r) can be calculated using equations 1, 2 and 3, respectively. (1) p (2) r (3) although, theoretically speaking, there is no correlation between precision and recall, in practice, a high level of precision is almost always achieved at the expense of recall, and the maximum recall is achieved at the expense of precision. which of these two measures is more important mostly depends on the nature of the application. very often, when a single metric is needed for the comparison of different classifiers, the f-score (also known as f1-score) is used (4) [17]: . (4) the f score is the harmonic mean of precision (p) and recall (r). the harmonic mean of a pair of numbers strongly tends towards the lower one. therefore, in order to get high f1-score, both p and r values must be high. there is another measure, known as the precision and recall breakeven point. the breakeven point is a point at which precision equals recall (p=r). it implies that different cases can be classified based on their probability of being positive. if this point cannot be found, the interpolation must be performed, using an interpolation method [17]. classification using artificial neural networks 533 3. results and discussion the paper presents the results of the analysis of two different examples of prediction. the research was carried out using the same dataset, but different dependent (class) variables. the aim of the first analysis was to build a neural network that would predict whether electricity consumers possess a single-tariff or dual-tariff electric meter, whereas the aim of the second one was to predict in which zone the consumers live. 3.1. classification of consumers according to type of meter they possess in order to solve this problem, two classes of the dependent variable „type_of_electric_meter‟ were defined. a single-tariff meter was labelled „0‟, and a dual-tariff meter was labelled „1‟. the normalization of data was done at the beginning of the research. table 2 shows the data subset before, and table 3 shows the same subset after the normalization process. table 2 data subset overview before normalization c o n su m er zo n e p er io d _f r o m p er io d _t o ty p e_ o f_ el ec tr ic a l_ m et er c u r r en t_ r ea d in g _l r p r ev io u s_ r ea d in g _l r d u a lr at e_ ta ri ff (l r ) p r ev io u s_ r ea d in g _h r c u r r en t_ r ea d in g _h r si n g le ra te _t ar if f( h r ) to ta l_ b o th _t a r if fs potrosac_1 1 01.01.2014 31.01.2014 0 1 1 0 64567 65014 447 447 potrosac_1 1 01.02.2014 28.02.2014 0 1 1 0 65014 65418 404 404 potrosac_1 1 01.03.2014 31.03.2014 0 1 1 0 65418 65800 382 382 potrosac_1 1 01.04.2014 30.04.2014 0 1 1 0 65800 66199 399 399 potrosac_1 1 01.05.2014 31.05.2014 0 1 1 0 66199 66634 435 435 potrosac_1 1 01.06.2014 30.06.2014 0 1 1 0 66634 67025 391 391 potrosac_1 1 01.07.2014 31.07.2014 0 1 1 0 67025 67457 432 432 potrosac_1 1 01.08.2014 31.08.2014 0 1 1 0 67457 67823 366 366 potrosac_1 1 01.09.2014 30.09.2014 0 1 1 0 67823 68279 456 456 potrosac_1 1 01.10.2014 31.10.2014 0 1 1 0 68279 68734 455 455 potrosac_1 1 01.11.2014 30.11.2014 0 1 1 0 68734 69108 374 374 potrosac_1 1 01.12.2014 31.12.2014 0 1 1 0 69108 69565 457 457 potrosac_1 1 01.01.2015 31.01.2015 0 1 1 0 69565 70055 490 490 potrosac_1 1 01.02.2015 28.02.2015 0 1 1 0 70055 70422 367 367 in this example, the independent variables included: consumer, zone, period_from, period_to, current_reading_lr, previous_reading_lr, dualrate_tariff.lr, previous_reading_hr, current_reading_hr, singlerate_tariff.hr, total_both_tariffs. a little more than 70% of the data were used as the training dataset, and the remaining percentage served as the test dataset. 534 d. knežević, m. blagojević table 3 data subset overview after normalization c o n su m er zo n e p er io d _f r o m p er io d _t o ty p e_ o f_ el ec tr ic a l_ m et er c u r r en t_ r ea d in g _l r p r ev io u s_ r ea d in g _l r d u a lr at e_ ta ri ff (l r ) p r ev io u s_ r ea d in g _h r c u r r en t_ r ea d in g _h r si n g le ra te _t ar if f( h r ) to ta l_ b o th _t a r if fs 1 0 0 0 0.418182 0 0 0 0 0.14096 0.141649 0.014261 2 0 0 0.090909 0 0 0 0 0 0.141936 0.142529 0.012889 3 0 0 0.181818 0.509091 0 0 0 0 0.142818 0.143362 0.012187 4 0 0 0.272727 0.090909 0 0 0 0 0.143652 0.144231 0.012729 5 0 0 0.363636 0.6 0 0 0 0 0.144523 0.145179 0.013878 6 0 0 0.454545 0.181818 0 0 0 0 0.145473 0.146031 0.012474 7 0 0 0.545455 0.690909 0 0 0 0 0.146327 0.146972 0.013782 8 0 0 0.636364 0.781818 0 0 0 0 0.14727 0.147769 0.011677 9 0 0 0.727273 0.272727 0 0 0 0 0.148069 0.148763 0.014548 10 0 0 0.8 0.872727 0 0 0 0 0.149064 0.149754 0.014516 11 0 0 0.872727 0.345455 0 0 0 0 0.150058 0.150569 0.011932 12 0 0 0.945455 0.945455 0 0 0 0 0.150874 0.151565 0.01458 13 0 0 0.018182 0.436364 0 0 0 0 0.151872 0.152632 0.015632 14 0 0 0.109091 0.018182 0 0 0 0 0.152941 0.153432 0.011708 after the completion of the learning process, which was performed using the training dataset, the neural network was created, as shown in figure 2. fig. 2 neural network diagram created using dependent variable „type_of_electric_meter‟ classification using artificial neural networks 535 finally, it was necessary to test the performance of the model obtained using the training dataset and determine the neural network accuracy by comparing these results with the data from the test group. first, the dependent variable was removed from the test dataset and the predictor variable was determined. then the predicted values were compared with the actual ones, and ultimately, the confusion matrix was created, providing an overview of true, false, positive and negative results. the confusion matrix is shown in table 4. table 4 confusion matrix prediction actual 0 1 0 77405 42398 1 27550 167220 based on the data provided in the confusion matrix and the conclusions drawn, the accuracy of this specific model was calculated using equation 1, as well as its precision (p) using equation 2, sensitivity (r) using equation 3, and f1-score (equation 4): . for detailed information, please see table 6. 3.2. classification of consumers according to zone they live in in the second example, the same dataset was used for the classification according to the zone where consumer live (urban zone – the class labeled „0‟, rural zone – the class labeled „1‟) in order to predict whether a consumer lives in an urban or in a rural zone. exactly 70% of the data were used as the training, and the remaining 30% were used as the test dataset. again, the normalization of data was done, and the neural network created, as shown in figure 3. fig. 3 neural network diagram created using dependent variable – „zone‟ 536 d. knežević, m. blagojević after creating the network, the results were compared with the data from the test group, and their correlation was reported using the confusion matrix, as shown in table 5. table 5 confusion matrix prediction actual 0 1 0 163965 17154 1 39199 94255 based on these data, the accuracy of this specific model was calculated using equation 1, as well as its precision (p), sensitivity (r) and f1-scoreusing equations 2, 3 and 4, respectively. . given the confusion matrix, other measures can be calculated in addition to the above-mentioned ones. this can also be done using some ready-made software available on the internet. an example of such software is available at the following address: http://onlineconfusionmatrix.com/ [19]. the measures obtained using this software for the examplesdescribed in sections 3.1 and 3.2 are given in table 6. table 6 confusion matrix measure value (classification: type of electrical meter) value (classification: zone) derivations sensitivity / recall (r) 0.7375 0.8071 tpr = tp / (tp + fn) specificity 0.7977 0.8460 spc = tn / (fp + tn) precision (p) 0.6461 0.9053 ppv = tp / (tp + fp) negative predictive value 0.8586 0.7063 npv = tn / (tn + fn) false positive rate 0.2023 0.1540 fpr = fp / (fp + tn) false discovery rate 0.3539 0.0947 fdr = fp / (fp + tp) false negative rate 0.2625 0.1929 fnr = fn / (fn + tp) accuracy 0.7776 0.8209 acc = (tp + tn) / (p + n) f1 score 0.6888 0.8534 f1 = 2tp / (2tp + fp + fn) matthews correlation coefficient 0.5197 0.6320 tp*tn fp*fn / sqrt((tp+fp)*(tp+fn)*(tn+fp)*(tn+fn)) http://onlineconfusionmatrix.com/ classification using artificial neural networks 537 4. conclusion according to the available literature, data classification via neural networks is one of the most commonly used techniques for processing huge datasets. this technique was used to obtain the results reported in this paper. the results can be further processed for different purposes. given the fact that a large dataset was dealt with, the results should provide a clear and unambiguous picture of the research. in the first example, the classification of electricity consumers according to the type of the meter they possess was performed. the accuracy of the predicted data was 77%, and the precision was 65%, which is a satisfactory result. in the example relating to the predictions according to the zone consumers live in, high precision was achieved as well. the accuracy of 82% and precision of 90% are highly satisfactory. the high precision and favorable f1-scores indicate that the learning was successfully done, and it can be concluded that the algorithm can provide reliable results regarding the prediction of the zone consumers live in as well. while processing different examples using the same dataset, with the same dependent and independent variables, some adjustments of the basic network parameters such as the number of hidden layers and threshold, were performed, but it turned out that these parameters did not significantly affect the final values, and therefore the results are not reported herein. based on the obtained results, it can be concluded that this learning model can be used reliably enough to predict the type of the electric meter electricity consumers possess, as well as whether they live in an urban or rural area. this paper presents only a segment of the research and the results obtained, which will provide the basis for further research using some other methods and algorithms, and it will be described in the future papers. acknowledgement: this study was supported by the serbian ministry of education and science, project iii 44006 and project iii 41007. references [1] u. ali, c. buccella and c. cecati, “households electricity consumption analysis with data mining techniques”, department of information engineering, computer science and mathematics, university of l‟aquila, italy, 2016. [2] d. shi, j. guan, j. zurada and a. manikas, “a data-mining approach to identification of risk factors in safety management systems”, journal of management information systems, vol. 34, no. 4, pp. 1054–1081, 2017. [3] m. blagojević, “appliance of web mining in education”, technics and informatics in education, ĉaĉak, 2010. [4] s. shadroo and m. a. rahmani, “systematic survey of big data and data mining in internet of things”, computer networks, 2018. [5] g. prati, l. pietrantoni and f. fraboni, “using data mining techniques to predict the severity of bicycle crashes”, accident analysis & prevention, elsevier ltd, 2017, pp. 44–54. [6] m. carpita, m. sandri, a. simonetto and p. zuccolotto, “data mining applications with r”, research center “data, methods and systems” department of economics and management of the university of brescia, italy, 2014. [7] z. guo, k. zhou,x. zhang, s. yang and z. shao, “data mining based framework for exploring household electricity consumption patterns: a case study in china context”, journal of cleaner production, elsevier ltd, 2018. https://www.sciencedirect.com/science/article/pii/s095965261831607x#! https://www.sciencedirect.com/science/article/pii/s095965261831607x#! https://www.sciencedirect.com/science/article/pii/s095965261831607x#! https://www.sciencedirect.com/science/article/pii/s095965261831607x#! 538 d. knežević, m. blagojević [8] r. rathod and r. d. garg, “regional electricity consumption analysis for consumers using data mining techniques and consumer meter reading data”, international journal of electrical power & energy systems, vol. 78, pp. 368–374, 2016. [9] s. k. barai, “data mining applications in transportation engineering”, journal transport, 2003. [10] c. da cunha, b. agard and a. kusiak, ”data mining for improvement of product quality”, international journal of production research, vol. 44, no. 18–19, pp. 4027–4041, 2006. [11] c. djeraba, “data mining from multimedia”, international journal parallel emergent distributed system, vol. 22, pp. 405–406, 2007. [12] s. xiaogang, ”data mining methods and models”, the american statistician, vol. 62, no. 1, pp. 91, 2012. [13] a. ghasemi, m. gitizadeh, “detection of illegal consumers using pattern classification approach combined with levenberg-marquardt method in smart grid”, international journal of electrical power and energy systems, vol. 99, pp. 363–375, 2018. [14] s. ramos; j. m. duarte; f. j. duarte; z. vale, “a data-mining-based methodology to support mv electricity customers‟ characterization”, elsevier bv, 2015. [15] z. jiang, r. lin, f. yang, “a hybrid machine learning model for electricity consumer categorization using smart meter data”, energies, vol. 11, p. 2235, 2018. [16] f. günther, “neuralnet: training of neural networks”, stefan fritsch, the r journal , vol. 2/1, 2010. [17] l. bing, web data mining. exploring hyperlinks, contents, and usage data,secon edition, springer, 2011. [18] g. ciaburro and b. venkateswaran, “neural networks with r”, packt publishing ltd, birmingham, 2017. [19] software on web address: http://onlineconfusionmatrix.com/, accessed in: october 2018. https://www.mendeley.com/authors/57205229167/ https://www.mendeley.com/authors/24778115900/ http://onlineconfusionmatrix.com/ instruction facta universitatis series: electronics and energetics vol. 27, no 3, september 2014, pp. 317 328 doi: 10.2298/fuee1403317s rapid exploration of cost-performance tradeoffs using dominance effect during design of hardware accelerators reza sedaghat 1 , anirban sengupta 2 1 electrical and computer engineering, ryerson university, toronto, canada 2 computer science and engineering, indian institute of technology, indore, india abstract. modern very large scale integration (vlsi) designs require a tradeoff between cost efficiency and performance (circuit speed). furthermore, the design space exploration (dse) of the cost-performance tradeoffs for the multi objective vlsi designs should also be fast and efficient in nature. this paper presents a novel accelerated dse approach for the exploration of cost-performance tradeoffs of modular multi (trio parametric. viz. cost, execution time and power consumption) objective vlsi hardware accelerators using hierarchical criterion analysis. the selection of the final design point is made after the tradeoffs are explored using the proposed approach. results of the proposed approach when applied to various benchmarks yielded significant acceleration in the exploration process compared to current existing approaches with multi parametric objective. key words: hardware accelerator, rapid, exploration, performance, cost 1. introduction the design space exploration process generally takes into account two conflicting situations such as a) accurately searching the optimal design point from the huge design space b) time taken (or number of architectures analyzed) to evaluate the architecture design space in order to select the optimal design point. the second situation is more significant for modern multi-objective heterogeneous vlsi systems because exhaustive exploration of the architecture space is prohibitive due to the massive size of the design space. the architecture exploration process is therefore a battle between the optimal architecture determination and the speed of the exploration process. furthermore, since present generation vlsi systems are multi-objective in nature, they demand efficient exploration approaches that can satisfy the multi-objective requisite by concurrently reducing the time spent in the architecture evaluation as well as maximizing the opportunity of automating the exploration methodology [1]-[7].  received january 27, 2014 corresponding author: reza sedaghat electrical and computer engineering, ryerson university, toronto, canada (e-mail: rsedagha@ee.ryerson.ca) 318 r. sedaghat, a. sengupta 2. related works exploration has been a subject of research for almost two decades. many approaches have been proposed in the recent past for fast and efficient evaluation of the design architecture space. the evaluation of the architecture design space has been performed by implementing an architecture configuration graph (acg) based on the hierarchical criterion factor [8], [9]. after the creation of the acg, the pareto optimal analysis is performed to find the optimal architecture. although the approach seems promising, the major drawback of this approach is the excessive time taken for the framework to build the architecture design space in order to analyze the variants. on the other hand, authors in [10] use an evolutionary algorithm, such as genetic algorithm (ga), for efficiently searching the optimal solution. they propose a new encoding scheme to improve the efficiency of ga search for design space exploration. using chromosome representation, the precedence relationships among the tasks in the input behavioral specification are encoded with a topological order-based representation to specify schedule priorities. authors in [11] also use ga based on binary encoding of chromosome for efficient design space exploration. additionally, authors in [12], [13] have developed a model that can assist designers at the system-level dse stage to explore the utilization of the reconfigurable resources and evaluate the relative impact of certain design choices. all the above mentioned approaches mostly consider dual objective dse (such as area and delay), but the proposed approach considers multi objective problems (such as cost, delay and power consumption).in addition to the above, a problem space genetic algorithm for design space exploration of data paths have been proposed in [14]. the authors have used the concept of heuristic/problem pair to convert a data flow graph into a valid schedule. the chromosome is encoded based on the „work remaining‟ value of each node. one of the problems with approach [14] is that the second special parent chromosome‟s built in correspondence with the minimum functional units (i.e. serial implementation) does not differ in the work remaining field of the first special chromosome. this may not always lead to the optimal solution. furthermore, the cost function considers only latency and not total execution time. authors in [15] describe an approach to solve the dse problem which is based on ga and weighted sum particle swarm optimization (wspso). the authors use crossover between parent and local-best-solution, then parent and globalbest-solution to implement particle swarm optimization (pso) behavior. the authors do not consider velocity to update the position. moreover in wspso, the authors also do not consider user constraints for area and execution time in cost function. in [16], authors describe another approach for dse in high level systems based on binary encoding of the chromosomes. however, they consider only traditional latency and not execution time constraint for data pipelining. authors in [17] suggest that identification of a few superior design points from the pareto set is enough for an excellent design process. the work shown in [18] discusses the optimization of area, delay and power in behavioral synthesis but does not consider execution time during data pipelining. the problem of design space exploration is also addressed in [19] by suggesting order of efficiency, which assists in deciding preferences amongst the different pareto optimal points. authors in [20] introduce a tool called systemcodesigner that offers rapid design space exploration with rapid prototyping of behavioral systemc models. in [21] evolutionary algorithms such as the genetic algorithm (ga) have been suggested to yield better results for the design space exploration process. an automated tool was developed by integrating behavioral rapid exploration of cost-performance tradeoffs using dominance effect during design.... 319 synthesis into their design flow, while authors in [22] describe current state-of-the-art high-level synthesis techniques for dynamically reconfigurable systems. additionally, authors in [23]-[25] also use a genetic algorithm for scheduling and resource allocation for data path synthesis. another class of scheduling methods employed previously was probabilistic in nature. for example the simulated annealing (sa) and simulated evolution (se) based scheduling techniques have been used for the high level synthesis problem. authors in [26], [27] have proposed a simulated annealing scheduling method called „salsa‟, which uses many probabilistic search operators to enhance the performance of the sa-based technique for high level synthesis problems. in addition, authors have also proposed an extended binding model for handling the scheduling problem in high level synthesis. simulated evolution has been proposed by authors in [28] to solve the combined problem of scheduling and resource allocation in high level synthesis. unfortunately, approaches [23]-[28] do not consider execution time, chaining and data pipelining. authors in [20],[29] proposed alternate approaches based on integer linear programming (ilp).although they are capable of providing good results, the computational complexity is massive and therefore require and extensive amount of time. furthermore, the concept of data pipelining based on execution time was not shown during system trade-off. work shown in [30] for dse suggests an evolutionary algorithm for successful evaluation of the design for an application specific soc. other well known tools for hls exist, such as gaut [31]. gaut inputs a c/c++ behaviour description for automatically generating a rtl structure based on compulsory constraint of throughput (or initiation interval) and clock period. in addition, authors in [32] propose an opensource hls tool called legup for fpga-based processor/accelerator systems. legup is able to synthesize c language to hardware, thereby providing a nice platform for hls. different fpga architectures are supported by this tool, which allows new scheduling algorithms and parallel accelerators. moreover, roccc, proposed in [33], is an opensource hls tool for generating rtl structure from c. it was designed for kernels that perform computation intensive tasks, such as most dsp applications. therefore, roccc applies to a specific class of applications (streaming-oriented applications) and is not a general c-to-hardware compiler, unlike legup [32]. 3. the proposed framework behind design space exploration 3.1 the proposed framework for cost model the model for the cost of the resources is proposed in this section and is an extension of the authors‟ previous work [3]-[5] on the area model. let the area of the resources be given as „a‟. ri denotes the resources available for system designing; where 1<=i<=n. „rclk‟ refers to the clock oscillator used as a resource providing the necessary clock frequency to the system. the total area can be represented as the sum of all the resources used for designing the system, such as adder, multiplier, divider etc, and clock frequency oscillator. total area is shown in equation (1). ( )a a ri (1) )()...( 2211 rclkaknknkna rnrnrrrr  (2) 320 r. sedaghat, a. sengupta where „nri’ represents the number of resource „ri‟,and „kri‟ represent the area occupied per unit resource „ri‟. let the total cost of all resources in the system be „cr‟. further, cost per area unit of the resource (such as adders, multipliers etc) is given as „cri‟ and the cost per area unit of the clock oscillator is „crclk‟. therefore total cost of the resources is given as: 1 1 2 2( .. ) ( )r r r r r rn rn ri rclkc n k n k n k c a rclk c          (3) applying partial derivative to equation (3) nr1 ….nrn, nrm,and arclkyields equations (4) to (7) respectively as shown below: 1 111 1 ])()..[( r rclkrnrnrnrrr r r n crclkacknckn n c     11 rr ck  (4) rn rclkrnrnrnrrr rn r n crclkacknckn n c ])()..[( 111     rnrn ck  (5) rclk rclk r c a c    (6) according to the theory of approximation by differentials, the change in the total area can be approximated by the following equation: rclk rclk r rn rn r r r r r a a c n n c n n c dc           1 1 (7) substituting equations (4) to (6) into equation (7) yields equation (8): equation (8) represents the change in total cost of resources with a change in the number of all resources and the clock period (clock frequency). the pf for cost of resources is defined as follows: 1 1 1 ( 1) r r ri r n k c pf r n     (9) ( ) rn rn ri rn n k c pf rn n     (10) ( ) ( ) rclk rclk a rclk c pf rclk n    (11) equations (9) and (10) indicate the average deviation of cost with respect to change in resource r1,….rn. note: this average deviation of cost helps in finding the dominance the change of cost contributed by resource rn the change of cost contributed by resource clock rclkrirnrnr crclkackndc  )( (8) rapid exploration of cost-performance tradeoffs using dominance effect during design.... 321 effect of corresponding resource types on cost. further, equation (11) indicates the change of cost of the system with respect to change in resource „rclk‟ (i.e. the dominance effect of rclk). 3.2 the framework used for execution time this section introduces a new mathematical pf model for clock oscillator resource, thus extending the authors‟ previous work [3]-[5] on pf model of functional resources. the priority factor of the resources r1, …rn (such as adders, multipliers etc) for the execution time is derived from [3]-[5].from [3]-[5], the priority factor for the resources r1,...rn for execution time, is defined as: max( ) ( )rn rn p rn n t pf rn t n     (12) the pf model for the clock oscillator is defined as: rclk min rclk max rclk n tt rclkpf  )( (13) in equation (13), ‘trclk max ’ and ‘trclk min ’are the maximum and minimum values of „execution time‟ and all the available resources have the maximum value. the pf defined in equations (12) and (13) indicates the average change in execution time with a change in number of a particular resource. this average deviation of execution time depends on various resources to find the dominance effect of corresponding resource types on execution time. 3.3 the framework used for power consumption pf for power consumption is defined as: max( ) ( )rn rn c rn n k pf rn p n     (14) max( ) ( )rm rm c rm n k pf rm p n     (15) 1 1 2 2 .. ( ) ( ) clk r r r r rn rn c r n t n t n t pf rclk p n          (16) similarly as explained above, the priority factors for power consumption defined in equations (14), (15) and (16) indicate the average change in the total power consumption of the system with the change in number of resources at maximum clock frequency. therefore, as discussed before, equations (14),(15),(16) indicate the dominance effect of resource types rn, rm and rclk on power metric. 322 r. sedaghat, a. sengupta 4. proposed demonstration 4.1 system specifications the case study of a selected benchmark has been provided for demonstration of the proposed method based on multiple real system specifications (as shown in table 1). the function of the selected second order digital iir chebyshev filter benchmark is given in (17). ( ) 0.041 ( ) 0.082 ( 1) 0.041 ( 2) 0.6743 ( 2) 1.4418 ( 1)y n x n x n x n y n y n         (17) x(n), x(n-1) and x(n-2) are the input vector variables for the function. the previous outputs are given by y (n-1) and y(n-2), while the present output is y(n). table 1 system specifications and constraints 1) maximum cost of resources: 1588 area units 2) maximum time of execution: 200µs (for d =1000 sets of data) 3) power consumption: minimum 4) maximum resources available for the system design: a) 3 adder/subtractor units. b) 3 multiplier units c) 3 clock frequency oscillators: : 24 mhz, 100 mhz and 400 mhz 5) no. of clock cycles needed for multiplier and adder/subtractor to finish each operation: 4 cc and 2cc 6) area occupied by each adder/subtractor and multiplier: 12 area units (a.u), and 65a.u on the chip (e.g. 12 clbs on fpga for adder/subtractor) 7) area occupied by the 24 mhz, 100 mhz and 400 mhz clock oscillator: 6 a.u., 10 a.u. and 14 a.u. 8) power consumed at 24mhz, 100mhz and 400 mhz: 10mw/a.u., 32 mw/a.u. and 100mw/a.u. respectively. 9) cost per area unit resource (cri) = 10 units and cost per area unit clock oscillator = 8 units 4.2 arrangement of the design space (consisting of resources) in increasing orders of magnitude in the form of architecture tree for cost model this paper proposes the use of a hierarchical tree topology for arrangement of design points in sorted orders and exploration of the optimal design point. unlike the authors‟ previous works [3]-[5] using vector design space, this approach uses a more convenient topology for exploration. the tree structure is easy to construct and does not require a special algorithm to order the design space in increasing/decreasing order. the pf of the different resources for cost model is given in equations below: 1 1 1 (3 1) 12 10 ( 1) 80 3 r r ri r n k c pf r n          (18) 2 2 2 (3 1) 65 10 ( 2) 433.33 3 r r ri r n k c pf r n          (19) rapid exploration of cost-performance tradeoffs using dominance effect during design.... 323 ( ) (14 6) 8 ( ) 21.36 3 rclk rclk a rclk c pf rclk n        (20) based on the pf calculated for cost model, the architecture tree for cost can be constructed. the tree is constructed in such a way, so that the resource with the highest pf is assigned level (l1) in the tree, followed by level (l2) being assigned to the resources with next highest pf and finally the last level being assigned to the resource with the lowest pf. the resource with the highest pf influences the cost of the system the most compared to the resource with the least pf. after the assigning the levels, the architecture tree comprising of the design space is automatically arranged in increasing orders of magnitude for the cost model. the architecture tree for the cost model is shown in fig. 1. after the design space is sorted in increasing order of magnitude, searching is applied on the design space. a mixed searching approach is proposed in this work by extracting the advantages of two different well known searching algorithms viz. interpolation search and binary search. previous works [3]-[5] employed a mono binary searching procedure. however, as highlighted in fig. 1, a mixed searching approach is proposed to further enhance the speed of the exploration process. interpolation search is used with the cost model in order to search for the border variant for cost, while for the execution time model binary search is used to find the border variant. the interpolation search performs faster than binary search in cases of uniformly sorted models, such as design space for cost (cost is an increasingly linear function of the number of resources, i.e. cost of the system increases with increase in number of resources). on the other hand, binary search exploits the „divide and conquer‟ approach. hence, it works faster on nonuniformly linear sorted models, such as execution time (execution time being a nonuniformly decreasing linear function of the number of resources i.e. increase in number of resources does not always decrease execution time, but remains same). therefore applying interpolation search on the sorted design space for cost, shown in fig.1 yields the border variant in just 2 comparisons (cost is calculated according to eqn.(3)). the border variant for cost is the last variant in the design space (in fig.1) which satisfies the constraint for cost specified. the border variant obtained for cost is „v11‟. fig. 1 architecture tree representing the design space for cost arranged in increasing order 324 r. sedaghat, a. sengupta 4.3 arrangement of the design space in decreasing orders of magnitude in the form of architecture tree for execution time model the pf of the different resources used in system design for execution time model is given below equations: max1 1 1 (3 1) 2 ( 1 ) ( ) 0.0416 0.055 3 r r p r n t pf r t n          (21) max2 2 2 (3 1) 4 ( 2) ( ) 0.0416 0.111 3 r r p r n t pf r t n          (22) 333.5 20.01 ( ) 104.50 3 max min rclk rclk rclk t t pf rclk n      (23) similarly, as described in section ii.b, the architecture tree for execution time is constructed based on the pf calculated for execution time. thus, the architecture tree obtained after construction is now also automatically arranged (sorted) in decreasing orders of magnitude. after arrangement, binary searching is applied in order to find the border variant for execution time (execution time is calculated according to the model of execution time shown in [4]). the border variant for execution time is the first variant in the design space, which satisfies the constraint for cost specified. the border variant obtained is variant „v5‟. after the border variants for both cost and execution time are found, the pareto optimal set is derived as explained in [3]-[5]. the architecture tree for power consumption is constructed similarly in increasing orders of magnitude for power consumption. among the variants of the pareto set, the one which appears first in the ascending ordered sorted design space (in the tree), is the one with the minimum power consumption. it concurrently satisfies the constraints for cost, execution time and power consumption (specified in table1) for the design problem. therefore the optimal variant obtained, which satisfies all the specified constraints, is variant „v5‟ (marked bold red in fig.1). 5. analysis and results the results of the proposed approach using pf and mixed searching scheme for rapid exploration of cost performance tradeoffs are verified for a number of benchmarks. compared to the authors‟ previous works [3]-[5], the proposed approach is capable of further enhancing the speedup of the exploration process. the search of the border architecture in the case of execution time (using binary search) requires only log2  n i=1 vri where „n‟ = number of type of resources and „vri‟ is the number of variants of resource „ri‟. the search of the border architecture (using interpolation search) for cost parameter requires log2 log2 log2  n i=1 vri. in the design space exploration approach presented here, three objective parameters have been used; execution time and cost are the parametric constraints and power consumption is the optimization parameter. the total number of architecture evaluations performed during searching using the proposed method is given as: rapid exploration of cost-performance tradeoffs using dominance effect during design.... 325 log2 log2  n i=1 vri + log2  n i=1 vri when applied on various benchmarks, the proposed approach indicated massive acceleration in the speedup compared to the exhaustive approach. the proposed method was also compared with a current approach in [8], [9]. the acceleration obtained, compared to the [8], [9], for both small and large size benchmarks is shown in tables2 and 3 respectively. moreover, the proposed approach has also been compared with a heuristic approach (wspso) [15]. as evident from tables 4 and 5, the proposed approach performs lower architecture evaluations than [15] for both small and large benchmarks respectively. for example, in case of mpeg mmv (shown in table 5) the proposed approach performs only 14 evaluations, while [15] perform 53 evaluations to search a final solution. table 2 experimental results of comparison between proposed dse approach with the current approach [8], [9] for small benchmarks benchmarks [2],[34],[35] total possible architecture in the design space for one parameter architecture evaluation using proposed approach (number of variants analyzed) architecture evaluation using approach [8],[9] (number of variants analyzed) percentage speed up using proposed approach compared to [8],[9] average speedup using proposed approach compared to [8],[9] cost execution time total iir chebyshev filter 27 4 6 10 18 44.44 % 41. 85 % mesa horner 36 5 6 11 19 42.10 % elliptic wave filter 78 5 7 12 19 36.84 % differential equation solver (hal) 90 5 7 12 19 47.82 % bpf 100 5 8 13 21 38.09 % table 3 experimental results of comparison between proposed dse approach with the current approach [8], [9] for large benchmarks benchmarks [2],[34],[35] total possible architecture in the design space for two parameters architecture evaluation using proposed approach (number of variants analyzed) architecture evaluation using approach [8],[9] (number of variants analyzed) percentage speed up using proposed approach compared to [8],[9] average speedup using proposed approach compared to [8],[9] cost execution time total auto regressive filter 144 5 8 13 21 38.09 % 37.56 % mpeg mmv 200 5 9 14 23 39.13 % matrix multiplication 400 6 10 16 25 36 % jpeg_idct 900 6 11 17 27 37.03 % 326 r. sedaghat, a. sengupta table 4 experimental results of comparison between proposed dse approach and the current approach [15] for small benchmarks benchmarks [2],[34],[35] total possible architecture in the design space for one parameter architecture evaluation using proposed approach (number of variants analyzed) architecture evaluation using approach [15] (number of variants analyzed) percentage speed up using proposed approach compared to [15] average speedup using proposed approach compared to [15] cost execution time total iir chebyshev filter 27 4 6 10 17 41% 48.7% mesa horner 36 5 6 11 21 47% elliptic wave filter 78 5 7 12 31 61% differential equation solver (hal) 90 5 7 12 32 62.5% bpf 100 5 8 13 35 62% table 5 experimental results of comparison between proposed dse approach and the current approach [15] for large benchmarks benchmarks [2][34][35] total possible architecture in the design space for two parameters architecture evaluation using proposed approach (number of variants analyzed) architecture evaluation using approach [15] (number of variants analyzed) percentage speed up using proposed approach compared to [15] average speedup using proposed approach compared to [15] cost execution time total auto regressive filter 144 5 8 13 52 75% 75% mpeg mmv 200 5 9 14 53 73.5% matrix multiplication 400 6 10 16 65 75.3% jpeg_idct 900 6 11 17 72 76.3% 6. conclusions this paper presented a novel framework for rapid exploration of the cost-performance tradeoffs for modular multi-objective hardware accelerators. once the design space for the cost-performance is explored, the final design point with minimum power consumption is searched from the obtained small pareto optimal set. the proposed dse approach for different benchmarks yielded superior results in terms of acceleration obtained compared to the current existing approaches. acknowledgement: this work is supported by the optimization and algorithm research lab (opral), ryerson university, canadian microelectronics corporation (cmc), motorola, nserc crsng, ontario innovation trust and sun microsystems. additionally, this work acknowledges the assistance provided by science and engineering research board (serb), department of science and technology, govt. of india. rapid exploration of cost-performance tradeoffs using dominance effect during design.... 327 references [1] g. de micheli, “synthesis and optimization of digital circuits”. mcgraw-hill: new york, 1994. [2] saraju p. mohanty, nagarajan ranganathan, elias kougianos and priyadarsan patra, “low-power highlevel synthesis for nanoscale cmos circuits” chapterhigh-level synthesis fundamentals, springer us, 2008 [3] anirban sengupta, reza sedaghat, zhipeng zeng, “a high level synthesis design flow with a novel approach for efficient design space exploration in case of multi parametric optimization objective”, microelectronics reliability, science direct, elsevier, volume 50, issue 3, march 2010, pp. 424-437. [4] zhipeng zeng, reza sedaghat, anirban sengupta, “a framework for fast design space exploration using fuzzy search for vlsi computing architectures”, accepted to appear in the proceedings of 2010 ieee international symposium on circuits and systems (iscas), june 2, 2010. [5] anirban sengupta, reza sedaghat, zhipeng zeng, “rapid design space exploration for multi parametric optimization of vlsi designs”, proceedings of 2010 ieee international symposium on circuits and systems (iscas), june 2, 2010, paris, france, article # 2016 (session: logic & high-level synthesis, c2l-f). [6] anirban sengupta, reza sedaghat, zhipeng zeng, “hardware efficient design of speed optimized power stringent application specific processor”, proceedings of ieee 21st international conference on microelectronics (icm), morocco, december 22, 2009, pp. 167-170. [7] d. gajski, n. dutt, a.wu, and s. lin, “high level synthesis: introduction to chip and system design”. kluwer: norwell, ma, 1992. [8] kirischian, l;geurkov, v., kirischian, v. and terterian, i. „multi-parametric optimisation of the modular computer architecture‟, int. j.technology, policy and management, vol. 6, no. 3,2006, pp.327–346. [9] kirischian, l. „optimization of parallel task execution on the adaptive reconfigurable group organized computing system‟, proc. of international conference parelec 2000, canada, pp.150–154. [10] vyas krishnan and srinivaskatkoori, “a genetic algorithm for the design space exploration of datapaths during high-level synthesis, ieee transactions on evolutionary computation, vol. 10, no. 3, june 2006, pp.229-313. [11] e. torbey and j. knight, “performing scheduling and storage optimization simultaneously using genetic algorithms,” in proc. ieee midwest symp. circuits systems, 1998, pp. 284–287. [12] giuseppe ascia, vincenzo catania, alessandro g. di nuovo, maurizio palesi, davide patti, “efficient design space exploration for application specific systems-on-a-chip” journal of systems architecture 53 (2007) pp. 733–750. [13] c. h. gebotys and m. i. elmasry, “global optimization approach for architectural synthesis,” ieee trans. comput.-aided des., vol. 12, 1993, pp. 1266–1278. [14] m. k. dhodhi, f. h. hielscher, r. h. storer, and j. bhasker, “datapath synthesis using a problem-space genetic algorithm,” in ieee trans.comput.-aided des., vol. 14, 1995, pp. 934–944. [15] harish ram d. s., m. c. bhuvaneswari, and shanthi s. prabhu, (2012) a novel framework for applying multiobjective ga and pso based approaches for simultaneous area, delay, and power optimization in high level synthesis of datapaths, vlsi design hindawi, article id 273276, 12 pages [16] e. torbey and j. knight, “high-level synthesis of digital circuits using genetic algorithms,” in proc. int. conf. evol. comput, may 1998, pp.224–229. [17] alessandro g. di nuovo, maurizio palesi, davide patti, fuzzy decision making in embedded system design,” proceedings of the 4th international conference on hardware/software codesign and system synthesis, october 2006,pp. 223-228. [18] a.c.williams, a.d.brown and m. zwolinski,“simultaneous optimisation of dynamic power, area and delay in behavioural synthesis”, iee proc.-comput. digit. tech, vol. 147, no. 6, 2000, pp. 383-390. [19] i. das. a preference ordering among various pareto optimal alternatives. structural and multidisciplinary optimization, 18(1):aug. 1999, pp.30–35. [20] christian haubelt, thomas schlichter, joachim keinert, mike meredith, “systemcodesigner: automatic design space exploration and rapid prototyping from behavioral models”, proceedings of the 45th annual acm ieee design automation conference, 2008, pp. 580-585. [21] j. c. gallagher, s. vigraham, and g. kramer,“a family of compact genetic algorithms for intrinsic evolvable hardware,” ieee trans. evolutionary computation., vol. 8, no. 2 , apr. 2004, pp. 111–126. [22] xuejie zhang and kam w. ng, “a review of high-level synthesis for dynamically reconfigurable fpgas”, microprocessors and microsystems, elsevier, volume 24, issue 4, 2000, pp. 199-211. [23] r. m. san and j. p. knoght, “genetic algorithms for optimization of integrated circuit synthesis,” in proc. 5th int. conf. genetic algorithms, san mateo, ca, 1993., pp. 432–438. 328 r. sedaghat, a. sengupta [24] r. j. cloutier and d. e. thomas, “the combination of scheduling, allocation and mapping in a single algorithm,” in proc. 27th design automation conf., jun. 1990, pp. 71–76. [25] n. wehn et al., “a novel scheduling and allocation approach to datapath synthesis based on genetic paradigms,” in proc. ifipworking conf. logic architecture synthesis, 1991, pp. 47–56. [26] g. krishnamoorthy and j. a. nestor, “data path allocation using extended binding model,” in proc. 32nd acm/ieee design automation conf.1992, pp. 279–284. [27] j. a. nestor and g. krishnamoorthy, “salsa: a new approach to scheduling with timing constraints,” ieee trans. comput.-aided des., vol. 12, 1993, pp. 1107–1122. [28] t. a. ly and j. t. mowchenko, “applying simulated evolution to high level synthesis,” ieee trans. comput.-aided des., vol. 12, no. 2, feb. 1993, pp.389–409. [29] c. t. hwang, j. h. lee, y. c. hsu, and y. l. lin, “a formal approach to the scheduling problem in highlevel synthesis,” ieee trans. comput.aided des., vol. 10, no. 2, feb1991, pp. 464–475. [30] giuseppe ascia, vincenzo catania, alessandro g. di nuovo, maurizio palesi, davide patti, “efficient design space exploration for application specific systems-on-a-chip” journal of systems architecture 53, 2007, pp. 733–750. [31] gaut: a high-level synthesis tool for dsp applications”, p. coussy, c. chavet, p. bomel et al., in high-level synthesis: from algorithm to digital circuits, springer, 2008, pp. 147-169. [32] canis, a., choi, j., aldham, m., zhang, v., kammoona, a., czajkowski, t., brown, s. d., and anderson, j. h. 2013. legup: an open-source high-level synthesis tool for fpga-based processor/accelerator systems. acm trans. embedd. comput. syst. 13, 2, article 24 (september 2013), 27 pages. [33] villarreal, j., park, a., najjar, w., and halstead, r. 2010. “designing modular hardware accelerators in c with roccc 2.0”. in proceedings of the ieee international symposium on field-programmable custom computing machines. 2010, pp. 127–134. [34] http://www.cbl.ncsu.edu/benchmarks/. [35] http://express.ece.ucsb.edu/benchmark/ http://express.ece.ucsb.edu/benchmark/ 12299 facta universitatis series: electronics and energetics vol. 37, no 3, september 2024, pp. 409 – 422 https://doi.org/10.2298/fuee2403409k © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system anindita khan, jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india orcid ids: anindita khan https://orcid.org/0009-0005-8228-5568 jibendu sekhar roy https://orcid.org/0000-0002-3571-2708 abstract. in a multi-user environment, wireless networks should be massive mimo (mmimo) systems consisting of multiple antennas. mmimo installs antenna arrays at base stations and uses hundreds of transceivers and other rf modules to form a very narrow and focused beam, thus reducing interference. the disadvantage of mmimo systems is large power consumption, and the rf module beamforming network for multiple antennas is significant in terms of power consumption. this paper presents a new low power beamforming technique for mmimo systems. the proposed semicircular array thinned smart antenna (tsa) can form a secure beam for user terminals while reducing interference. in a thinned array, selected antennas are kept off, which reduces power consumption but the array pattern remains the same as the built-in array, and the sidelobe level (sll) is reduced. the thinned array antennas are designed at 5 ghz of the sub-6ghz band. the differential evolution (de) algorithm is utilized to determine the optimal array sequence and least mean square (lms), recursive least square (rls), and sample matrix inversion (smi) algorithms are used for beam generation of the tsa and the algorithms are de-lms, de-rls and de-smi. a maximum of 48% energy savings is achieved. using the de-lms, de-rls and de-smi algorithms, tsa achieved maximum sll reduction of 11 db, 11 db and 9 db, respectively. key words: smart antenna, thinning, beamforming, signal processing, differential evolution, power saving 1. introduction multiple-input multiple-output (mimo) system places multiple antennas between the transmitting and the receiving ends for the enhancement of capacity and the quality of the radio link. mimo uses multiplexing and spatial diversity to transmit data [1-3]. in multiuser mimo (mu-mimo), the same frequency and time are used to transmit different data to different users to increase network capacity [4,5]. in mmimo system, larger antenna arrays with advanced technologies are used for beam formation [6-9]. mmimo is the main received november 21, 2023; revised january 17, 2024; accepted january 24, 2024 corresponding author: jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india e-mail: drjsroy@kiit.ac.in https://orcid.org/0000-0002-3571-2708 https://orcid.org/0000-0002-3571-2708 410 a. khan, j. s. roy building block of the new fifth-generation radio (5g nr), which provides many advantages to mobile operators and end users [10, 11]. an mmimo system with a large array can produce a 3d beam in both horizontal and vertical planes towards users, which is known as full-dimension mimo (fd-mimo). fd-mimo increases capacity and data rates for all users, especially in urban areas with high-rise buildings [12-14]. because of large number of antennas with rf modules, the power consumption of mmimo systems is quite high. this paper presents a new method of energy savings for large antenna array in mmimo. 2. related work there are many methods to design highly directive beams in mmimo [15-24]. in [15], both dipole and microstrip arrays were used for the mmimo, and experimental results were reported for microstrip arrays. the change of thegain model was examined by integrating the array. in [16], a hybrid mmimo antenna array for different lte bands was reported and its impact on the user was examined. [17] provides an overview of various beamforming techniques in 5g mmimo systems. an algorithm for beamforming for mu-mmimo is reported in [19]. the text [20] shows a beamforming method for mu-mimo systems. in [21], a dual-band mimo antenna is proposed for lte and 5g applications. chebyshev cone has been proposed for generating radiation beam in mu-mmimo systems to suppress side lobes using antenna layer [22]. a review article [23] was published describing the design and construction of 5g mmimo systems. the highly directive beams in a mmimo system can be generated in several ways [15-24]. although the beamforming method is used in mmimo systems, large antenna arrays are needed and this causes high energy consumption. the specific problem of reducing power consumption in mmimo systems has not been addressed in the literature. this article introduces the smart antenna concept for installation in mmimo systems. this beamforming approach leverages the features of smart antennas (sa) [24-28] and exploits the properties of thinned antenna arrays to reduce power consumption by firing any antenna in the array. the sa determines the direction of arrival (doa) of the signal coming from the cell and ensures that the signal returns to the user [24]. the efficiency of signal processing algorithms is important in the operation of sa [26]. using a thinned antenna array, almost the same beamwidth with lower side lobe level (sll) and lower power consumption can be achieved [29 -31]. if all the antennas are in the "on" state, the array is called a fully populated array. the ratio of the number of "off" antennas to the number of "on" antennas is called thinning ratio. there is actually no antenna in the permanent "off" position; toggle “off” and “on” as needed. the matched loads or terminations, connected to the antennas, are used to "turn off" the antenna. generally, the "off" and "on" intervals in the sequence are determined by optimization methods. generally, optimization techniques such as genetic algorithm (ga), particle swarm optimization (pso) and differential evolution (de) are used to obtain the array sequence [32-34]. in this paper, a semicircular dipole antenna array is used to examine the properties of a tsa. the circular, semicircular or elliptical arrays in mobile towers have some advantages [35-39]. 3. differential evolution algorithm here, de optimization [40-42] is used for the design of thinned antenna array. the different steps of using the de algorithm are as follows: design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system 411 step 1: create an initial population of test vectors or parent vectors of population size p, where each vector contains ’n’ number of genes. each gene represents a specific antenna parameter. before starting the algorithm, the value of each vector in the initial population is calculated. each gene is represented by xg(i,j); where g is the symbol of the ith parent vector and the jth gene of the parent vector. step 2: for the ith vector, three other mutually exclusive vectors are chosen, different from ‘i’. an intermediate donor vector vg(i, 1…..n) corresponding to xg(i, 1……….n) is formed as 𝑉𝐺(𝑖, 𝑗) = 𝑋𝐺 (𝑛𝑏𝑒𝑠𝑡, 𝑗) + 𝐹. ( (𝑋𝐺 (𝑛1, 𝑗) − 𝑋𝐺 (𝑛2, 𝑗))) (1) here f is the scaling factor and varies from 0 to 2. the ‘nbest’ is the best member of population for the fitness at the current time step and generated randomly in the program using de/rand/1scheme of algorithm. the n1, n2 are the number of genes, related to the antenna parameters and generated during the simulation. step 3: a binary crossover operation is performed between the donor vector and the parent vector using a crossover probability cr. this provides a target vector, tg(i,1……….n) and a random number ‘y’ is generated. 𝑇𝐺 (𝑖, 𝑗) = 𝑉𝐺 (𝑖, 𝑗) 𝑖𝑓 𝑦 ≤ 𝐶𝑅𝑜𝑟 𝑗 = 𝑗𝑟𝑎𝑛𝑑 𝑇𝐺 (𝑖, 𝑗) = 𝑋𝐺 (𝑖, 𝑗) 𝑜𝑡ℎ𝑒𝑟𝑤𝑖𝑠𝑒 (2) step 4: evaluate the target vector for its cost and if it has a lower cost than the corresponding parent vector xg(i,1……n), then in the next generation the target vector will replace the parent vector . up to the maximum number of generations or up to the termination criterion, steps 2 to 4 are repeated. 4. adaptive signal processing algorithms after using de optimization, array weights are used for generation beam of sa using lms, rls and smi algorithms respectively. lms is an adaptive gradient based algorithm which is stochastic in nature [43, 44] and the filter weights are used to obtain the optimal wiener solution of the gradient vector. the weights of the variables are adjusted in each iteration as [43, 44] 𝑤(𝑛 + 1) = 𝑤(𝑛) + 𝜇 𝑒∗(𝑛)𝑥(𝑛) (3) this error e(n) between the adaptive beamformer array outputs y(n)= 𝑤𝐻(𝑛)𝑥(𝑛) and desired signal d(n) is 𝑒(𝑛) = 𝑑(𝑛) − 𝑤𝐻(𝑛)𝑥(𝑛) (4) here, wh(n) is the hermitian transpose or conjugate transpose of weight w(n). the step-size parameter (µ) bound is 𝜇 < 1 2 𝑡𝑟𝑎𝑐𝑒[𝑅𝑥𝑥] (5) in the rls algorithm, the convergence speed is controlled by the replacement of the step size μ by the gain matrix. to obtain a fast-turnaround replacement algorithm, the least 412 a. khan, j. s. roy squares method is used instead of statistical method, based on the mse method [43, 44]. in the rls algorithm, the weight vector is changed as �̅�(𝑘) = �̅�(𝑘 − 1) + �̅�(𝑘)[𝑑∗(𝑘) − �̅�𝐻(𝑘)�̅�(𝑘 − 1)] (6) where, �̅�(𝑘) = �̂�𝑥𝑥 −1(𝑘)�̅�(𝑘) is gain vector, �̂�𝑥𝑥 is correlation matrix �̂�𝑥𝑥(𝑘) =∝ �̂�𝑥𝑥(𝑘 − 1) + �̅�(𝑘)�̅�𝐻(𝑘) (7) the forgetting factor ‘α’ is a positive constant, 0 ≤ α ≤ 1. the smi algorithm needs less number of iteration [43-45] for convergence to be satisfactory and uses k-time samples. in the smi algorithm, the time-averaged prediction is equal to the real correlation matrix [25, 45] 𝑅𝑥𝑥 (𝑛) ≈ 1 𝑁 ∑ 𝑥(𝑛) 𝑥𝐻(𝑛) 𝑁 𝑛=1 (8) 𝑟(𝑛) = 1 𝑁 ∑ 𝑑∗(𝑛) 𝑥(𝑛) 𝑁 𝑛=1 (9) the matrix 𝑥𝑁(𝑛)is the n-th block of vectors x ranges over n -data snapshots. the weights in the smi algorithm are updated as [25, 45] 𝑤𝑆𝑀𝐼(𝑛) = 𝑅𝑥𝑥 −1(𝑛)𝑟(𝑛) = [ 𝑥𝑁(𝑛) 𝑥𝑁 𝐻(𝑛) ]−1𝑑∗(𝑛)𝑥𝑁(𝑛) (10) and the expected signal is [25, 45] 𝑑(𝑛) = [ 𝑑(1 + 𝑛𝐾) 𝑑(2 + 𝑛𝐾) 𝑑(3 + 𝑛𝐾) … … … 𝑑(𝑁 + 𝑛𝐾) ] (11) 5. design of thinned semi-circular smart antenna array of dipoles a uniform circular array (uca) and uniform semi-circular array (usca) of dipoles are shown in fig. 1(a) and in fig. 1(b) respectively. the uniform dipole spacing is ‘d’. (a) (b) fig. 1 (a) uniform circular array (b) uniform semi-circular array of dipole antennas for a dipole antenna of length ‘l’, the radiation electric field is [37] design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system 413 𝐸(𝜃) = 𝑗𝜂 𝐼0𝑒−𝑗𝛽𝑟 2𝜋𝑟 [ cos ( 𝛽𝑙 2 𝑐𝑜𝑠𝜃) − cos ( 𝛽𝑙 2 ) 𝑠𝑖𝑛𝜃 ] (12) here, β=2π/λ is the propagation constant, η=120πω is the free space impedance, and i0 is current amplitude. for n number of dipoles, the total electric field is 𝐸𝑡𝑜𝑡𝑎𝑙 = 𝐸(𝜃)𝐴𝐹(𝜃) (13) where, af(θ) is the array factor (af) for for circular array of isotropic antennas [37] 𝐴𝐹(𝜃) = ∑ 𝐼0𝑒𝑗[𝑘𝑟𝑠𝑖𝑛𝜃cos (𝜑0−𝜑𝑛)+𝛽𝑛] 𝑁 𝑛=1 (14) where, βn is the phase excitation of nth antenna, di is the spacing factor of the i-th element, and kr and φn are 𝑘𝑟 = 2ᴨ𝑟 λ =∑ 𝑁 𝑖=1 𝑑𝑖 (15) 𝜑𝑛 = 2ᴨ kr ∑ 𝑑𝑖 𝑛 𝑖=1 (16) for a semi-circular array, half number of elements of a circular array is taken, so that the array factor becomes 𝐴𝐹(𝜃) = ∑ 𝐼0𝑒𝑗[𝑘𝑟𝑠𝑖𝑛𝜃cos (𝜑0−𝜑𝑛)+𝛽𝑛] 𝑁/2 𝑛=1 (17) the method of application of de, in the design of tsa, is shown in fig. 2. the de optimization provides the “on” and “off” sequence with lowest sll. then this weight sequence is used along with lms, rls and smi to generate beam and null of tsa. for the cost function for thinned smart antenna eq.(13) for 𝐸𝑡𝑜𝑡𝑎𝑙(𝜃)is used. fig. 2 beamforming method of tsa 414 a. khan, j. s. roy the subroutine of fig. 2 is a part of the main program for thinned smart antenna and therefore the input parameters are same as the main program of fig. 2. the simulation parameters for the design of tsa for various beam directions (bd) and null directions (nd), are presented in table 1. the comparison between tsa using de-lms and sa without thinning, for 20 dipoles and 31 dipoles, is shown in fig. 3, fig. 4 and fig. 5. table 1 simulation parameters parameters values number of dipoles (n) n=64, 31, 20 dipole separation in the array 0.5λ frequency 5ghz length of dipole λ/2 =0.03m signal-to-noise ratio 20db value of μ in de-lms 0.002 value of α in de-rls 0.9 value of k in de-smi 800 iteration number 800 population size in de optimization 48 fig. 3 normalized af for de-lms for n=20, bd=00, nd=100 fig. 4 normalized af for de-lms for n=20, bd=200, nd=100 design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system 415 fig. 5 normalized af for de-lms for n=31, bd=00, nd=100 the sll is lowered in de-lms by 10 db when n=20, bd=00, 10 db when n=20, bd=200, and 11 db when n=31, bd=00. the comparison between tsa using de-rls and sa without thinning, for 20 dipoles and 64 dipoles, is shown in fig. 6 and fig. 7. fig. 6 normalized af for de-rls for n=20, bd=200, nd=100 fig. 7 normalized af for de-rls for n=64, bd=-150, nd=100 416 a. khan, j. s. roy in fig. 6, and 7, the sll is lowered in de-rls by 10 db when n=20 and 6 db when n=64. the comparison between tsa using de-smi and sa without thinning, for 20 dipoles and 64 dipoles, is plotted in fig. 8 and fig. 9. fig. 8 normalized af for de-smi for n=20, bd=00, nd=100 fig. 9 normalized af for de-smi for n=64, bd=-150, nd=100 in fig. 6, and 7, the sll is lowered in de-smi by 7 db when n=20, 9 db when n=64. the performance comparison of tsa with sa is presented in table 2. design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system 417 table 2 results for tsa antenna type dipolenum ber bd sllmax (db) on (1) & off (0) sequence reduction of sllmax in (db) power saving sa without thinning (lms) n=20 00 -10 all on ----nil n=20 200 -9 all on ----nil n=31 00 -9 all on ----nil n=64 -150 -9 all on ----nil thinned sa (de-lms) n=20 00 -20 0 0 1 0 0 1 0 1 1 1 1 1 1 1 0 1 0 0 1 0 10 45% n=20 200 -19 1 0 0 1 0 1 1 1 1 1 1 1 1 0 1 0 0 1 0 0 10 40% n=31 00 -20 1 0 0 0 0 1 0 1 1 1 1 1 1 1 1 1 1 1 1 0 0 1 0 0 1 0 0 0 0 0 0 11 48% n=64 -150 -20 1 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 1 0 1 1 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 1 1 1 0 0 0 1 0 0 1 0 1 0 0 1 1 0 0 0 11 42% sa without thinning (rls) n=20 00 -10 all on ----nil 20 -8 all on ----nil n=31 00 -7 all on ----nil n=64 -150 -8 all on ----nil thinned sa (de rls) n=20 00 -20 0 0 1 0 0 1 0 1 1 1 1 1 1 1 0 1 0 0 1 0 10 45% n=20 20 -18 1 0 0 1 0 1 1 1 1 1 1 1 1 0 1 0 0 1 0 0 10 40% n=31 00 -18 1 0 0 0 0 1 0 1 1 1 1 1 1 1 1 1 1 1 1 0 0 1 0 0 1 0 0 0 0 0 0 11 48 % n=64 -150 -14 1 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 1 0 1 1 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 1 1 1 0 0 0 1 0 0 1 0 1 0 0 1 1 0 0 0 6 42% 418 a. khan, j. s. roy sa without thinning (smi) n=20 00 -10 all on ----nil 20 -11 all on ----nil n=31 00 -7 all on ----nil n=64 -150 -7 all on ----nil thinned sa (desmi) n=20 00 -17 0 0 1 0 0 1 0 1 1 1 1 1 1 1 0 1 0 0 1 0 7 45% n=20 20 -14 1 0 0 1 0 1 1 1 1 1 1 1 1 0 1 0 0 1 0 0 3 40% n=31 00 -16 1 0 0 0 0 1 0 1 1 1 1 1 1 1 1 1 1 1 1 0 0 1 0 0 1 0 0 0 0 0 0 9 48 % n=64 -150 -16 1 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 1 0 1 1 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 1 1 1 0 0 0 1 0 0 1 0 1 0 0 1 1 0 0 0 9 42 % the 3db beamwidths for the sa and tsa are compared in table 3. table 3 simulated 3 db beamwidths (bw) for sa and tsa no. of dipole antennas beam direction 3db bw for sa without thinning (lms) 3db bw for tsa (delms) 3db bw for sa without thinning (rls) 3db bw for tsa (de rls) 3db bw for sa without thinning (smi) 3db bw for tsa (desmi) 20 00 8.20 90 7.10 80 6.80 70 200 9.30 100 5.50 60 9.20 100 31 00 2.50 30 2.30 3.20 3.50 3.90 64 -150 30 3.50 30 3.10 2.80 2.90 the 3db beam width of tsa (table 3) is still almost the same as that of the smart antenna, which means that the behavior of the smart antenna has not changed much. however, as the smart antenna gets thinner, sll (table 2) decreases. the de-lms, derls, and de-smi algorithms provide the desired bd and nd. in the above table, the benefit is the same for all the algorithms since the sequence is optimized by the same method. however, sll varies in all cases. the maximum sll reduction of 11 db and power saving of 48% are achieved for tsa using de-lms; the maximum sll reduction of 11 db and power reduction of 48% are achieved for tsa using de-rls; and the maximum sll reduction of 9 db and power reduction of 48% are obtained for tsa using de-smi. the power reduction of 48% is achieved for tsa using de-lms because in the antenna array 48% of the total number of antennas are off while almost same 3-db beamwidth is achieved (effectively no change of directivity). therefore, 48% power of a fully populated array is not required. design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system 419 the profiles of best cost values (magnitude of the array factor) when n=64, n=31, and n=20 are shown in fig. 10. fig. 10 best cost value for dipole antenna array the error graphs for tsa of n= 64, using different algorithms are shown in fig. 11. fig. 11 error graphs for n= 64 6. conclusion tsa is a new concept that combines the advantages of thinned antennas and smart antennas. by using tsa, the power budget in array design can be minimized without affecting the properties of the array. the main task of the present work is the use of a new energy-saving hybrid method for the design of large smart antennas, in which optimization algorithms are combined with signal processing algorithms. large arrays are required in massive mimo systems. the thinned array will provide many features such as desired 420 a. khan, j. s. roy beam and null formations, sll reduction, power consumption reduction according to the user's needs. de-lms is easier to implement than de-smi and de-rls algorithms. the simulation time is almost the same for all the algorithms, but when the dipole number in the antenna array increases, the simulation time increases. when n=20 and n=31, the simulation times are 1.5 minutes and 3 minutes respectively. the laptop configuration is: 11th generation intel(r) core tm i3-1115g4 @ 3.00 ghz, 2901 mhz, 2-core, 4 logical processors. since there is no similar published data, the simulation results of the proposed algorithm can’t be compared with other data. references [1] a. j. paulraj, d. a. gore, r. u. nabar and h bolcskei, "an overview of mimo communications-a key to gigabit wireless", proceedings of the ieee, vol. 92, no. 2, pp. 198–218, 2004. [2] m. r. amin and s. d. trapasiya, "space time coding scheme for mimo system-literature survey", procedia eng. vol. 38, pp. 3509–3517, 2012. [3] s. yang and l. hanzo, "fifty years of mimo detection: the road to large-scale mimos", ieee communication survey tutor. vol. 17, pp. 1941–1988, 2015. [4] h. v. poor, d. reynolds and x. wang, "multiuser mimo systems" space-time wireless systems: from array processing to mimo communications (vol. 9780521851053, pp. 406-425). 2006. cambridge university press. https://doi.org/10.1017/cbo9780511616815.021 [5] a. immanuel and m. suganthi, "performance analysis of low power channel estimator for multi-user mimo-ofdm system", wireless personal communication, vol. 107, pp. 341–350, 2019. [6] e. g. larsson, o. edfors, f. tufvesson and t.l. marzetta, "massive mimo for next generation wireless systems", ieee communication magazine, vol. 52, no. 2, pp. 186–195, 2014. [7] l. zheng, k. zhao, j. mei, b. shao, w. xiang and l. hanzo, "survey of large-scale mimo systems", ieee communication survey tutor. vol. 17, 1738–1760, 2015. [8] n. hassan and x. fernando, "massive mimo wireless networks: an overview", electronics, vol. 6, no. 3, 63, pp. 1–29, 2017. [9] y. su, h. gao and s. zhang, "secure massive mimo system with two-way relay cooperative transmission in 6g networks", eurasip journal on wireless communications and networking, vol. 2023, no. 73, pp. 1–22, 2023. [10] f. wen, h. wymeersch, b. peng, w. p. tay, h. c. so and d. yang, "a survey on 5g massive mimo localization", digit. signal process. vol. 94, pp. 21–28, 2019. [11] m. belgiovine, k. sankhe, c. bocanegra, d. roy and k. r. chowdhury, "deep learning at the edge for channel estimation in beyond-5g massive mimo", ieee wireless communication. vol. 28, pp. 19–25, 2021. [12] g. xu, y. li, j. yuan, r. monroe, s. rajagopal, s. ramakrishna, y. h. nam, j-y. seol, j. kim, m. gul, a. aziz and j. zhang, "full dimension mimo (fd-mimo): demonstrating commercial feasibility", ieee journal on selected areas in communications, vol. 35, no. 8, pp. 1876–1886, aug. 2017. [13] n. qu, l. liu, r. shafin, b. li, m. liu and f. gong, "interference alignment meets multi-cell multi-user massive fd-mimo systems in doa-based precoding", ieee trans. on wireless communications, vol. 20, no. 11, pp. 7460–7474, nov. 2021. [14] j. hoydis, s. brink and m. debbah, "massive mimo in the ul/dl of cellular networks: how many antennas do we need?", ieee j selected areas communication, vol. 31, no. 2, pp. 160–171, 2013. [15] c.-m. chen v. volski, l.v.d. perre, g.a.e. vandenbosch and s. pollin, "finite large antenna arrays for massive mimo: characterization and system impact", ieee trans. antennas propag, vol. 65, no. 12, pp. 6712–6720, 2017. [16] y. li, c.-y.-d. sim, y. luo and g. yang, "12-port 5g massive mimo antenna array in sub-6ghz mobile handset for lte bands 42/43/46 applications", ieee access, vol. 6, pp. 344–354, 2017. [17] e. ali, m. ismail, r. nordin and n. f. abdulah, "beamforming techniques for massive mimo systems in 5g: overview, classification, and trends for future research", frontiers of information technology & electronic engineering, vol. 18, no. 6, pp. 753–772, 2017. [18] s. el-khamy, k. moussa and a. el-sherif, "a smart multi-user massive mimo system for next g wireless communications using evolutionary optimized antenna selection", telecommunication systems,” vol. 65, pp. 309–317, 2017. design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system 421 [19] s. el-khamy, k. moussa and a. el-sherif, "performance of enhanced massive multiuser mimo systems using transmit beamforming and transmit antenna selection techniques", wireless personal communications, vol. 94, pp. 1825–1838, 2017. [20] s. j. shim, s. lee, w. s. lee, j. h. ro, j. l. baik and h. k. song, "advanced hybrid beamforming technique in mu-mimo systems", applied sciences, vol. 10, p. 5961, 2020. [21] p. ranjan, s. yadav and a. bage, "dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications", facta universitaits series energetics and electronics, vol. 36, no. 1, pp. 43–51, 2023. [22] t. s. priya, m. kondala and p. periasamy, "hybrid beamforming for massive mimo using rectangular antenna array model in 5g wireless networks", wireless personal communication, vol. 120, pp. 2061– 2083, 2021. [23] s. k. ibrahim, m. j. singh, s. s. al-bawri, h. h. ibrahim, m. t. islam, m. s. islam, a. alzamil and w. m. abdulkawi, "design, challenges and developments for 5g massive mimo antenna systems at sub 6-ghz band: a review", nanomaterials, vol. 13, no. 3, pp. 1–40, jan 2023. [24] a. dhar, a. senapati and j. s. roy, "direction of arrival estimation for smart antenna using a combined blind source separation and multiple signal classification algorithm", indian journal of science and technology (ijst), vol. 9, no. 18, pp. 1–8, 2016. [25] k. ghatak, a. senapati and j. s. roy, "investigations on adaptive beam forming for linear and planar smart antenna arrays using sample matrix inversion algorithm", international journal of computer applications, vol. 117, no. 8, pp. 47–50, 2015. [26] a. khan, a. senapati and j. s. roy, "adaptive signal processing algorithm applied to the design of smart antenna in a cellular network considering phase quantization error", 2nd intl. conf. on data science and applications (icdsa 2021), kolkata, springer lecture notes in networks & systems, april 10-11, 2021, vol. 288, pp. 563–575, nov. 2021. [27] b. samantaray, k. k. das, and j. s. roy, "performance of smart antenna in cellular network using variable step size algorithms", international journal of microwave and optical technology (ijmot), vol. 15, no. 2, pp. 179–186, 2020. [28] m. atzemourt, a. farchi, y. chihab, and z. hachkar, "performance evaluation of lms and cm algorithms for beamforming", advances in materials science and engineering, article id 7744625, pp. 1–6, 2022. [29] r. l. haupt, "adaptively thinned arrays", ieee transactions on antennas and propagation, vol. 63, no. 4, pp. 1626–1633, 2015. [30] m. salucci, g. gottardi, n. anselmi, and g. oliveri, "planar thinned array design by hybrid analyticalstochastic optimization", iet microwaves, antennas & propagation, vol. 11, no.3, pp. 1–5, 2017. [31] a. s. karasev, and m. a. stepanov, "genetic algorithm for antenna array thinning with minimization of side lobe level", in proceedings of the ieee 15th international conference of actual problems of electronic instrument engineering (apeie), ieee xplore,2022, pp. 268–272. [32] r. l. haupt, "thinned arrays using genetic algorithms", ieee transactions on antennas and propagation, vol. 42, no.7, pp. 993–999, 1994. [33] r. bera, and j. s. roy, "thinning of elliptical and concentric elliptical antenna arrays using particle swarm optimization", microwave review, vol. 19, no. 1, pp. 2–7, 2013. [34] a. suresh, c. puttamadappa, and m. k. singh, "thinning approach based on sides lobe level reduction in the linear array antenna using dynamic differential evolution", ssrg international journal of electrical and electronics engineering, vol. 10, no. 2, pp. 61–74, feb. 2023. [35] r. sanudin, and t. arslan, "semi-circular antenna array for azimuth doa estimation", in proceedings of the loughborough antennas & propagation conference (lapc), nov. 12-13, 2012, ieee xplore, p. 1–4. [36] p. das and j. s. roy, "thinning of semi-elliptical and quarter-elliptical antenna array using genetic algorithm optimization", international journal of emerging technologies in computational and applied sciences (ijetcas), vol. 8, no. 4, pp. 335-339, may 2014. [37] c. a. balanis, antenna theory: analysis and design, john wiley, 4th ed., 2016. [38] a. khan, j. s. roy, "thinned smart antenna of a semi-circular dipole array for massive mimo systems", advanced electromagnetics, vol.12, no. 4, pp. 17–25, dec. 2023. [39] j. qi, h. x. zheng, m. wang, r. liu, c. tang and e. li, "a phased array composed of dipole with semicircular ring for 5g", in proceedings of the international conference on microwave and millimeter wave technology (icmmt), 2019, pp. 1–3. [40] r. strong and k. price, "differential evolution – a simple and efficient heuristic for global optimization over continuous spaces", journal of global optimization, vol. 11, pp. 341–359, 1997. [41] a. deb, j. s. roy, and b. gupta, "performance comparison of differential evolution, particle swarm optimization and genetic algorithm in the design of circularly polarized microstrip antennas", ieee trans. antennas & propagation, ieee, vol. 62, pp. 3920–3928, 2014. 422 a. khan, j. s. roy [42] a. deb, j. s. roy, and b. gupta, "a differential evolution performance comparison: comparing how various differential evolution algorithms perform in designing microstrip antennas and arrays,” ieee antennas & propagation magazine, vol. 60, pp. 51–61, 2018. [43] b. widrow and s. d. stearns, adaptive signal processing, prentice hall, 1985. [44] s. haykin, adaptive filter theory, 4th ed, pearson education, 2002. [45] w. a. e. ali, d. a. e. mohamed, and a. h. g. hassan, "performance analysis of least mean square sample matrix inversion algorithm for smart antenna system", in proceedings of the loughborough antennas & propagation conference, 11-12 nov., 2013, ieee xplore, pp. 624–629. facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 331-344 https://doi.org/10.2298/fuee1903331s © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd influence of circuit breaker replacement on power station reliability* dragan stevanović 1 , aleksandar janjić 2 1 electric power industry of serbia, zaječar, serbia 2 faculty of electronic engineering, niš, serbia abstract. in this paper, the new methodology for the determination of circuit breakers (cb) replacement time has been proposed. the methodology is based on statistical analysis of condition monitored data and the impact on substation reliability. influence of cb removal on substations reliability is presented together with cost justification of such investment. using statistical data of 427 cbs gathered in past 10 years, weibull probability distribution of contact resistance for breakers on both overhead and underground feeders and voltage levels of 35 kv and 10 kv is determined. substations reliability is calculated using minimal path and minimal cuts method. with this methodology influence of cb’s condition on substations reliability can be observed by using real field data. example of calculation is shown on 35/10 kv substation. substation reliability calculation is carried out for 5 different scenarios of cb removal with their expenses. at the end, discounted investment costs for each action and period of 5 years are calculated and are shown in table. for this substation final results are showing best scenario with removal cb’s on power transformers. key words: circuit breaker, cost evaluation, substation, reliability, weibull distribution. 1. introduction circuit breaker is a device used for switching feeder power supply in any working mode (normal load, no load, short circuit current…), and therefore represents the vital element of power system operation. cb failure threatens work of other equipment, which directly affects reliability of whole substation. this makes good reason of finding correlation between cb condition and substations reliability. to determine economic effects of maintenance, overhaul or cb removal [2], [3], assessment of circuit breakers remaining useful life (rul) must be done [4], [5]. remaining useful life is the lifetime from current time to the time that the device fails [2]. it is random variable which depends on various factors (device age, working conditions, received january 31, 2019; received in revised form april 25, 2019 corresponding author: dragan stevanović electric power industry of serbia, 19000 zaječar, serbia (e-mail: dragan.stevanovic3@epsdistribucija.rs) * an earlier version of this paper was presented at the 4th virtual international conference on science, technology and management in energy, energetics 2018, october 25-26, niš, serbia [1] 332 d. stevanović, a. janjić and level of maintenance) [6]. if the failure time of the population follows the probability density function (pdf) f (t), then the population mean time to failure (mttf) can be calculated by (1): 0 0 ( ) ( )mttf tf t dt r t      (1) r(t) is the survival function at t. let define xt as the random variable of the rul at time t, then the probability density function (pdf) of xt conditional on yt is denoted as f(xt /yt) where yt is the history of operational information up to t. if yt is not available then the estimation of f (xt/yt) is: ( ) ( / ) ( ) ( ) t t t t f t x f x y f x r t    (2) where f (t + xt) is the pdf of the life at t + xt cb’s reliability analysis depends of type of available data, which can be: contact resistance, commutation noise, erosion resistance [7], ultrasound detectors, transient earth voltage, infrared thermo scanning [8], cb control circuit data [9] and collected data of cb faults [10]. depending of collected data type, rul can be assessed with: knowledge-based models (fuzzy method [11]); life expectancy models (statistical method [6], [12] – [16]); artificial neural networks and physical models [5]. utilities, grid operators and industrial power consumers are facing unprecedented challenges. with increasingly aging infrastructure combined with cost-cutting pressures to operate into today’s competitive environment, prioritizing investment has never been so important [17]. in [18] reliability of different substation configurations is evaluated using the minimal cut-set method based on the criterion of continuity of service. in [19] reliability indices of each failure events and entire reliability indices in the ring bus substation and double bus double breaker substation were calculated and quantitatively compared. method that combines the modeling of failures and repairs as stochastic point processes and a procedure of sequential monte carlo simulation for computing the reliability indexes is presented in [20]. in [21] comparison between the reliability of different substation constructions is shown. a number of methods have been used in determining the final substation indices, such as markov model, minimal cut-set method based on the criterion of continuity of service. [22] have developed a monte carlo approach to solving a system with non-markovian models. the mostly used methods are fault tree analysis, event tree analysis, monte carlo simulation and state enumeration [21]. because of importance of reliability, some companies [17] are started to use software, algorithms and analysis techniques for reliability management services to provide substation owners with the right insights to make optimal investments to improve system performance. influence of circuit breaker replacement on power station reliability 333 2. cb ageing process the main causes of cb deterioration are the age, the number of operations under normal and fault conditions and the operational conditions like the temperature and contaminants content. measuring the contact resistance is usually done by using the principles of ohm’s law. since the interrupting chamber is a closed container, we have only access to the entry and exit conductors; the measured r between these two points would be the sum of all the contact resistances found in series, (fixed, make-break and sliding contacts). according to the iec 60694 [23], article 6.4.1, the current value to use should be the closest to the nominal current the interrupting chamber is designed for. if it is impossible to do so, lower currents can be used but not less than 50 a to eliminate the galvanic effect that might affect the readings. 2.1. data collecting analysis covers 42 35/10 kv substations and 427 circuit breakers, mounted on 10 kv and 35 kv feeders. measurement of static contact resistance presented by the voltage drop on contacts is collected in past 10 years, where voltage drop was measured on every two years. other data regarding to circuit breakers that are collected are: voltage level, feeder type, manufacturing year, number of fault trips, number of short circuit current trips, number of customers, and annual consumption. depending on cb’s nominal current and nominal voltage allowed voltage drop goes from 3.5 mv up to 14 mv [24]. analyzed cbs have following maximal voltage drop values: 35 kv cb’s: 3.5 – 7 mv; 10 kv cb’s: 7 – 14 mv. manufacturer manual [24] states that cb must be completely overhauled after: 10-12 years of service, or 5000 operations, or 6 short-circuit currents breaking. measurement has been done with dc current of i=100a, measuring voltage drop on every cb’s pole. fig. 1 shows voltage drop distribution among all currently available data, with values divided into 4 categories depending of voltage drop level. fig. 1 voltage drop distribution on analyzed circuit breakers 0.00 10.00 20.00 30.00 40.00 50.00 60.00 i "<5 mv" ii "5-10 mv" iii "10-20 mv" v ">20 mv" 334 d. stevanović, a. janjić 2.2. data analyzing in first step, state of every cb is determined, according to its voltage drop value. cb’s with voltage drop value beyond permissible are set in “failed” state (f), and those which still have voltage drop value below allowed are in “suspension” state (s). for failed cb’s precise year of reaching that condition is defined. from manufacturers manual [24] allowed voltage drop values are dependent on cb’s rated voltage and rated current, and manufacturer allows them to surpass the permissible value for 25%. for that reason, cb’s are also analyzed for two different criterions: 1) maximal allowed voltage drop value is as in manufacturers table, 2) maximal allowed voltage drop is 25% greater than recommended values. weibull distribution is most commonly used method for equipment failure, ageing and reliability analysis [25]. it can describe three types of equipment states (infant mortality, normal work, wear out), through bathtub curve [26]. weibull cumulative distribution function represents probability of failure in given period of time (3). it is two-parametric distribution, with slop parameter η and shape parameter β. ( ) 1 t f t e          (3) slop parameter shows time at which 63.2% of analyzed units are failed. shape parameter represents failure rate behavior. its value tells whether failures are decreasing or increasing. β<1 indicates infant mortality, while β>1 show wear out failures. higher value of beta indicates greater rate of failure. in table 1 weibull parameters for different criteria are shown. table 1 weibull parameters cb feeder type η β fail \ suspens overhead +25% 39.1 5.2 100 \ 87 overhead 37.1 4.8 131 \ 56 underground +25% 41.5 6.1 63 \ 169 underground 38.1 6.1 97 \ 135 10 kv feeders +25% 43.4 5.6 87 \ 224 10 kv feeders 40.4 5.1 135 \ 176 35 kv feeders +25% 35.2 5.6 79 \ 31 35 kv feeders 33.8 5.6 96 \ 14 all feeders +25% 40.4 5.6 166 \ 255 all feeders 38.0 5.3 231 \ 190 by observing weibull parameters two conclusions could made, underground feeders (both criteria of voltage drop value limit) have highest β while overhead feeder have lowest value. considering η parameter, 10 kv feeders (+25% limit voltage drop level) have closer time to failure, while 35kv feeders have lowest η value. both β and η parameters are calculated for the whole cb population from the statistical data using the least square method [27]. weibull distribution function with right censored data (case when some devices didn’t fail during period of analysis) unreliability is calculated for all cb’s categories. on figures 2-5 unreliability distribution of different criterions is shown, and specific values for unreliability and failure rate regarding cb’s age from this example are shown in table 2. influence of circuit breaker replacement on power station reliability 335 fig. 2 weibull unreliability distribution for cbs on overhead feeders fig. 3 weibull unreliability distribution for cbs on underground feeders 336 d. stevanović, a. janjić fig. 4 weibull unreliability distribution for cbs on 10 kv overhead feeders fig. 5 weibull unreliability distribution for cbs on 35 kv overhead feeders table 2 cb’s reliability indices from weibull analysis feeder type age unreliability failure rate transformer 35 kv 32 0.532 0.226 transformer 10 kv 41 0.278 0.11 supply 35 kv 32 0.532 0.226 load 10 kv 41 0.612 0.11 considering age of cb’s in substation from example, values of reliability indices obtained in previous analysis are shown in table 2. influence of circuit breaker replacement on power station reliability 337 3. substation reliability analysis in this example 35/10 kv substation is used, which has two 8mva power transformers, two 35 kv supply feeders and ten 10 kv feeders. functional blocks are defined and shown in fig. 6. functional block consists of elements which would be out of supply if only one of them fails. active failure is an event that causes the protection system to operate and isolate a failed component [18]. active failure events refer to all failures that induce the actions of protective breakers adjacent to the component where failure occurred and affect normally operating components where no failure occurred [19]. a minimal cut-set is a set of components that when all fail, the continuity of service is lost, but if any one of the components doesn’t fail, the continuity remains [18]. fig. 6 functional graph using functional blocks from fig. 6, functional graph can be created (fig. 7). in this case it is considered that 10kv feeders can supply the same load (ring connection). substations reliability is calculated with minimal path and minimal cuts method [28]. fig. 7 functional blocks of substation m s f b o t1 l k a jn i t2 g supply feeder ii m l a n j b f k t2 g s t1t1t2 supply feeder i 338 d. stevanović, a. janjić 3.1. minimal path method path is serial connection of graph branches which connects input and output nod. minimal path doesn’t cross the same nod more than once. highest order of minimal path is by one less than number of network nods. in this case (fig. 6), number of nods is m=6 and connection matrix c will have dimension mxm, where the element eij is branch which connects nods „i“ and „j“. [ ] (4) minimal paths of first order doesn’t exist here, because there is no just one branch which connects input and output nod. minimal paths of second order are obtained by multiplying (from right side) first row of matrix c with whole matrix c. minimal paths of third order are obtained by multiplying former result with whole matrix c. identical process is carried for minimal paths of next orders. after calculations, minimal paths are: iii: , iv: , , , v: , 3.1. minimal cuts method cut of a graph consists of group of branches by which removal connection between input and output nod is broken. minimal cut is unique and doesn’t include other cuts. matrix of minimal paths p (5), with size mxn, where is mnumber of minimal paths and n – number of branches, has elements eij which are equal to 1 if branch „j“ is part of the minimal path „i“, otherwise it is equal to 0. if minimal paths are given in next order: fkt2; sgt1; kat1g; kt2bg; sat2f; st1bf; kat1bf; sat2bg and branches are defined in next order: k, s, a, t1, t2, b, f, g. for the graph from fig. 6 matrix of minimal paths is: [ ] (5) if all elements of one column are all equal to 1, then that branch is minimal cut of first order. minimal cuts of second order are obtained by adding columns of matrix p (every column is added to next columns). adding is done by law of bool algebra (1+1=1, 1+0=1, 0+1=1, 0+0=0). influence of circuit breaker replacement on power station reliability 339 as the result, minimal cuts of second and third order are: ii: k-s, t1-t2, f-g iii: k-a-t1, s-a-t2, t1-b-f, t2-b-g connection between input and output nod of the functional graph is broken when all branches that are part of cut are broken. in other words, connection is broken if at least one minimal cut is broken. with all results that are obtained so far, equivalent minimal paths graph of substation can be made (fig. 8). fig. 8 equivalent minimal paths graph 4. different scenarios of cb replacement analysis of cb replacement profitability and its influence on substations unreliability is shown through 4 different scenarios. new cb unavailability would be equal to u=0.00000822 [21] (with assumption that failure frequency and probability of failure are remaining unchanged). list of actions:  i – no cb replacement  ii – replacement of all cb’s on 10 kv feeders  iii – replacement of cb’s on supplying feeders  iv – replacement of cb’s on power transformers  v – replacement of all cb’s results of each action, depending of time they are taken, are shown in table 3 (and also fig. 9-10), while table 4 show how each action affects power stations unavailability and failure frequency. s' t2 m t1' n a t1' l t2' b" k x f' o k' x t2 t2' f' t1' a t1 g' t2' f x g' g x s' bb m t1 s t1 g n a t2 f l t1 j i t2 s x t1' s' k t2' k' a t1' f' j g' t2' b a" k' x b x x 340 d. stevanović, a. janjić table 3 unavailability results in different scenarios year action i ii iii iv v 1 0.50038 0.48357 0.47501 0.04219 1.40364e-05 2 0.62222 0.60417 0.59232 0.04796 1.40364e-05 3 0.72393 0.70440 0.69079 0.05269 1.40364e-05 4 0.78698 0.76531 0.75203 0.05664 1.40364e-05 5 0.83704 0.81432 0.80080 0.05897 1.40364e-05 table 4 power station unavailability regarding of year taking action results of different actions (%) parameter action ii action iii action iv action v unavailability reduction (%) 3.36 5.07 91.57 99,99 failure frequency 8.73 6.59 80.26 95.59 fig. 9 power stations unreliability in next years for each action (columns from table 3) fig. 10 power stations unreliability regarding taken action (rows from table 3) -0.05 0.15 0.35 0.55 0.75 0.95 1 2 3 4 5 u n re li ab il it y time (years) i action ii action iii action iv action v action -0.05 0.15 0.35 0.55 0.75 0.95 1 2 3 4 5 u n re li ab il it y action year i year ii year iii year iv year v influence of circuit breaker replacement on power station reliability 341 5. cost estimation of actions considering price of cb replacement of 5 000 $ for 35 kv cb and 2 000 $ for 10 kv feeder (including labor cost) with average time of replacement of 6 hours (from decision making, transporting and mounting), cost of different actions is presented in table 5. column “maintenance” covers regular maintenance costs of old circuit breakers which are not replaced, and column “replacement” consists of replacement costs only. values in column “sum” are total costs in the year of investment (maintenance of not replaced cb’s and costs of newly installed cb’s). table 5 cost of cb replacement action description maintenance ($) replacement ($) sum ($) i no cb replacement, only costs of maintenance 13 200 0 13 200 ii replacement of cb’s on all 10 kv feeders 2 400 38 800 41 200 iii cb replacement on 35 kv supply feeders 12 400 14 800 27 200 iv replacement of cb on power transformers 11 600 23 600 35 200 v replacement of all cb’s in power station 0 77 200 77 200 considering probability of cb failure due to its age and condition, costs of unplanned failure are calculated and presented in table 6. table 6 variable costs per cb, considering probability of failure cb (feeder) year i ii iii iv v trafo 35 3,936.80 4,639.80 5,143.00 5,424.20 5,624.00 trafo 10 1,223.20 1,368.40 1,579.60 1,760.00 1,966.80 kladovo i 4,528.80 4,861.80 5,261.40 5,838.60 6,119.80 cs carina 11,872.81 12,745.83 13,793.50 15,306.87 16,044.43 zelezara 11,873.07 12,747.18 13,798.03 15,318.13 16,068.36 cs jezero 11,884.33 12,794.19 13,932.46 15,627.93 16,657.18 radio stanica 11,872.80 12,745.80 13,793.40 15,306.60 16,043.80 other feeders 3,936.80 4,639.80 5,143.00 5,424.20 5,624.00 fig. 11 variable costs per cb 1,000.00 3,000.00 5,000.00 7,000.00 9,000.00 11,000.00 13,000.00 15,000.00 17,000.00 1 2 3 4 5 c o st ( $ ) year transformer 35kv transformer 10kv 35kv supply feeder 10kv feeder "cs carina" 10kv feeder "železara" 10kv feeder "cs jezero" rest 10kv feeders 342 d. stevanović, a. janjić 6. present cost value calculation calculating present value is done by equation (6): (1 ) fv pv n c c i   (6) where is: cpv – present value cfv – future value i – rate n – time period following calculation is carried for rate of , and future value (expected costs in next 5 years) is calculated with equation (7): ( )fv mn inv unc c c c   (7) cmn – costs of planned maintenance (table 5) cinv – costs of new investments (table 5) cun – unpredictable costs due to cb’s failure (table 6) example of present value calculation (fourth year, ii action): 4 ( ) (2 400 38 800 40 414) 57 817.42 $ (1 ) ( 0,09) mn inv un pv n c c c c i a          (8) using equations (6) and (7), present values of all actions in following years can be calculated. results are shown in table 7. table 7 present value ($) of all actions in next 5 years action cost type year 1 2 3 4 5 i sum 103,701.41 113,811.80 123,343.39 133,350.33 139,178.97 discounted costs 95,138.91 95,793.12 95,243.73 94,468.74 90,456.78 ii sum 70,897.60 74,956.40 78,613.20 81,614.00 83,802.80 discounted costs 65,043.67 63,089.30 60,703.81 57,817.42 54,466.07 iii sum 257,707.81 293,331.40 321,446.19 341,504.33 355,204.17 discounted costs 236,429.18 246,891.17 248,215.44 241,930.28 230,858.34 iv sum 115,381.41 123,795.40 131,898.19 140,981.93 145,997.37 discounted costs 105,854.50 104,196.11 101,849.60 99,875.15 94,888.27 v sum 77,200.00 77,200.00 77,200.00 77,200.00 77,200.00 discounted costs 70,825.69 64,977.70 59,612.56 54,690.43 50,174.70 total expected costs considering fixed (table 5) and variable costs (table 6) are put together for every action, and their discounted value is calculated. influence of circuit breaker replacement on power station reliability 343 7. conclusion the determination of cb replacement time is a complex procedure depending on various stochastic factors. substations reliability analysis can be used for determining size of both asset replacement and new investments and their financial justifications as well. using statistical data of 427 cbs gathered in past 10 years, weibull probability distribution of contact resistance for breakers on both overhead and underground feeders and voltage levels of 35 kv and 10 kv proved to be the best fit. cb’s removal has been assessed by the risk assessment and substation’s reliability improvement calculation. results are showing that the first candidates for the replacement are those cb’s with the biggest influence on substations reliability. obtained results are showing that the maximal increase in substation reliability regarding invested money can be obtained with the replacement of cb’s on power transformers (action iv). in that case unavailability is decreased by ~92% with investment of 23 600 $ for replacement of 4 circuit breakers. used methodology is easy to utilize because all data are already available and there is no need for extra investments or labor cost in order calculation to be carried out. references [1] d. stevanović, a. janjić, “circuit breaker replacement strategy based on the substation risk assessment”, in proceedings of the 4th virtual international conference on science, technology and management in energy, energetics 2018, october 25-26, niš, serbia, pp. 248–253. [2] y. hu, s. liu, h. lu, h. zhang, “remaining useful life assessment and its application in the decision for remanufacturing”, procedia cirp, vol. 15, pp. 212–217, 2014. [3] h. picard, j. verstraten, m. hakkens, r. vervaet, “decision model for end of life management of switchgears”, in proceedings of the el. and instr. appl. in the petroleum & chem. ind., pcic europe 4th european conference, jun. 2007. [4] c. okoh, r. roy, j. mehnen, l. redding, “overview of remaining useful life prediction techniques in through-life engineering services”, sciencedirect, procedia cirp, vol. 16, pp. 158–163, 2014. [5] j. z. sikorska, m. hodkiewicz, l. ma, “prognostic modelling options for remaining useful life estimation by industry”, mech. syst. and sign. process., vol. 25, no. 5, pp. 1803–1836, jul. 2011. [6] x. s. si, w. wang, c. h. hu, d. h. zhou, “remaining useful life estimation – a review on the statistical data driven approaches”, european journal of operational research, vol. 2013, no. 1, pp. 1–14, aug. 2011. [7] m. braunović, v. v. konchits, n. k. myshkin, fundamentals of electrical contacts, crc press, 2006. [8] a. h. a. bakar, h. a. illias, m. k. othman, h. mokhils, “identification of failure root causes using condition based monitoring data on a 33 kv switchgear”, el. power and energy systems, vol. 47, pp. 305– 312, may, 2013. [9] s. natti, m. kezunovic, “assessing circuit breaker performance using condition-based data and bayesian approach”, el. power systems research, vol. 81, no. 9, pp. 1796–1804, sep. 2011 [10] a. janssen, d. makareinis, c. e. sölver, “international survey on circuit-breaker reliability data for substation and system studies”, ieee trans. power delivery., vol. 29, pp. 808–814, apr. 2014. [11] p. sun, h. jiang, h. yu, x. huang, y. sun, x. wang, “reliability evaluation of high voltage circuit breaker based on ifahp and ga”, icaees, nov. 2015. [12] j. f. boudreau, s. poirier, “end-of-life assessment of electric power equipment allowing for non-constant hazard rate – application to circuit breakers”, el. power and energy systems, vol. 62, pp. 556–561, nov. 2014. [13] x. zhang, e. gockenbach, z. liu, h. chen, l. yang, “reliability estimation of high voltage sf6 circuit breakers by statistical analysis on the basis of the field data”, el. power system research, vol. 103, pp. 105–113, oct. 2013 [14] l. jian, t. tianyuan, “ls-svm based substation circuit breaker maintenance scheduling optimization”, el. power and energy system, vol. 64, pp. 1251–1258, jan. 2015. [15] g. balzer, f. heil, p. kirchesch, r. meister, c. neumann, “evaluation of failure data of hv circuit-breakers for condition based maintenance”, cigre, paris, report a3-305, 2004. 344 d. stevanović, a. janjić [16] t. m. lindquist, l. bertling, r. eriksson, “circuit breaker failure data and reliability modelling”, iet gen., transm. & distrib. vol. 2, no. 6, pp. 813–820, nov. 2008. [17] abb switzerland ltd, substation reliability management services, 2016, www.abb.com/substationservice [18] d. nack, reliability of substation configurations, iowa state university, 2005. [19] s.h. kim, d. j. lee, substation reliability evaluation considering the failure events, iop conf. ser.: earth environ. sci. 159, 2018. [20] c. j. zapata, a. alzate, m. a. ríos, “reliability assessment of substations using stochastic point processes and monte carlo simulation”, ieee pes general meeting, july 2010 [21] f.wang, “reliability evaluation of substations subject to protection failures”, delft university of technology, netherlands, july 2012. [22] r. billington and g. lian, “monte carlo approach to substation reliability evaluation,” iee proceedings-c, vol. 1 40, no. 2, march 1993. [23] common specifications for high-voltage switchgear and controlgear standards, international standard iec 60694, edition 2.2, 2002-01 [24] operating manual for medium voltage medium oil circuit breakers for internal assembly, minel, serbia, 1984 [25] t. suwanasri, m. t. hlaing, c. suwanasri, “failure rate analysis of power circuit breaker in high voltage substation“,gmsarn international journal, vol. 8, pp. 1–6, 2014. [26] j. z. sikorska, m. hodkiewicz, l. ma, “prognostic modelling options for remaining useful life estimation by industry”, mech. syst. and sign. process, vol. 25, no. 5, pp. 1803–1836, jul. 2011. [27] w. li, j. zhou, j. lu, w. yan "a probabilistic analysis approach to making decision on retirement of aged equipment in transmission systems" ieee trans. on power delivery, vol. 22, no. 3, pp. 1891–1896, july 2007. [28] j. nahman, v. mijailović, “razvodna postrojenja”, beograd, 2005 http://www.abb.com/substationservice 12853 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 89 108 https://doi.org/10.2298/fuee2501089g © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper grid integrated electric car charging optimization using topsis and grey wolf optimization sucharita ghorui1, bidrohi bhattacharjee2, arijit chakrabarti2, pradip kumar sadhu2 1seacom engineering college, howrah, west bengal. india 2department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand-826004, india orcid ids: sucharita ghorui https://orcid.org/0009-0006-6737-5546 bidrohi bhattacharjee https://orcid.org/0000-0001-7622-8034 arijit chakrabarti https://orcid.org/0000-0002-0115-7478 pradip kumar sadhu https://orcid.org/0000-0001-8104-5232 abstract. electric cars are becoming popular these days and the adoption is on the rise. it is crucial to figure out a smart way to schedule when they can charge and discharge. this scheduling should consider the technical limitations of power grids while meeting the economic and environmental goals. for improving the management of power usage of electric cars, a new approach has been proposed in this paper. the proposed approach includes a charging plan that incorporates a vehicle-to-grid (v2g) method with an objective to reduce the variation in power usage and to cut down the cost of charging for electric cars in the residential areas. topsis (technique for order of preference by similarity to ideal solution) has been used to address the complex scheduling problem and grey wolf optimization (gwo) has been applied for optimizing the schedules. this paper compares the suggested strategy with both single and multi-objective scheduling, focusing on factors like energy losses, peak load on transformers, and the load on power lines. to test the effectiveness of this approach, the authors have applied it to a 38-node distribution feeder in an experiment. the results show that the solutions obtained using topsis are very helpful for smoothing out peaks in power demand and reducing costs. in simpler terms, this approach would help make electric car charging more efficient and economical while also benefiting the power grid. integrating ev charging stations with the power grid presents challenges like managing changing demand, balancing the load, and keeping energy costs low. to solve these problems, this paper introduces an innovative approach that combines the technique for order preference by similarity to ideal solution (topsis) with grey wolf optimization (gwo). our method uses the strengths of both techniques to find the best charging strategies based on several factors, received july 17, 2024; revised september 21, 2024; accepted october 9, 2024 corresponding author: bidrohi bhattacharjee department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand-826004, india e-mail: onlybidrohi@gmail.com https://orcid.org/0009-0006-6737-5546 https://orcid.org/0000-0001-7622-8034 https://orcid.org/0000-0002-0115-7478 https://orcid.org/0000-0001-8104-5232 90 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu such as cost, grid stability, and user convenience. the gwo algorithm imitates the hunting strategy of grey wolves to search for optimal solutions, while topsis ranks these solutions by their closeness to the ideal outcome. this combination provides a more effective and flexible way to manage complex charging scenarios than traditional methods. by improving the efficiency of the charging process and minimizing its impact on the grid, this approach supports a smarter, greener future where evs can be charged more intelligently and affordably. key words: advanced metering infrastructure, distribution system operator, mixedinteger linear programming, topsis, valley filling model. 1. introduction in modern days, more people are using electric vehicles (evs) for transportation in order to tackle the environmental issues globally. however, this growing popularity of evs has been raising concerns about how they are charged and it might lead to potential problems for the power grids. if the ev charging is not coordinated properly, it could result in issues like overloading transformers and power lines, exceeding voltage limits, and causing more power losses. this, in turn, might require expensive upgrades to the power network, especially during peak usage times. apart from the technical challenges of integrating evs into the existing infrastructure, the other big problem is that many people are hesitant to switch to electric transportation. to encourage people to adopt evs, it is essential to make it economically attractive for them. coordinated charging is a solution to these challenges. by actively managing ev charging in a coordinated way, the power grid capacity and available resources can be utilized properly. people would be encouraged to support the coordinated ev charging when it aligns with their economic interests. some research has happened in the area of electric vehicle charging considering balancing environmental concerns, technical challenges, and economic factors [17]. in [17], the main goal was to cut down on co2 emissions from both the power grid and the vehicles themselves. another study [10] has suggested a step-by-step approach towards charging evs, with the aim of minimizing changes in power usage, differences between peak and low periods, and the overall cost of the charging. the comparison of different strategies for charging evs, considering the views of various parties involved, has been discussed in [4]. in [4], the focus has been minimizing both fuel and electricity costs, as well as the wear and tear on the ev batteries. the authors have put an emphasis on the health of the battery in the optimization process as the battery contributes significantly to the overall cost of evs and it tends to wear out over time. however, such studies [17] have not looked into how the charging strategies would affect the power grid itself. the study mentioned in [5], has suggested a plan to give people incentives for using electricity during off-peak hours, when not many people are using it. the idea has been to reduce the loss of money and the ups and downs in the power supply. particle swarm optimization (pso) has been used to figure out the best way to solve the problem with multiple goals. however, in those studies, it has been assumed that all electric vehicles (evs) have been showing up and leaving at the same time. the study in [11] has come up with a smart way for evs to work together to spend less money on electricity and reduce power losses. a technique called weighted sum aggregation factors has been used to tackle the problem with many goals with an assumption that all evs are starting with the same amount of charge. however, the vehicle-to-grid (v2g) mode has not been studied grid integrated electric car charging optimization using topsis and grey wolf optimization 91 in that research work. in [2], a plan has been created to make micro grids work better, involving electric vehicles (evs), the power grid, and distributed power sources. the method called ε-constrained has been used to figure out the best way to balance different goals. but, the uncertainties related to evs have not been studied. in [10], a way to optimize multiple things at once, like reducing variations in power use and cutting down on costs has been suggested. a method that combines weighted sums and fuzzy logic has been used for this optimization. another study [11] has focused on coordinating evs in the best way to save money and reduce emissions. the ε-constrained optimization method has been used considering vehicle-to-grid (v2g) mode, but none of these studies have consider the cost of wear and tear on the ev batteries. few studies [9, 3] have included the analysis on how charging electric vehicles (evs) with a vehicle-to-grid (v2g) method affects both the technical and economic aspects. another study [9] has used a weighted approach. the weighted approach depends a lot on the chosen weights, while the εconstraints [3] have treated one goal as the main one and the others as secondary. to put it simply, these studies have explored different ways to make electric vehicles work well with the power grid, considering factors like costs, emissions, and wear on the ev batteries. various methods have been used to find the best solutions, but each approach has its own strengths and limitations. topsis is a helpful method for solving problems with multiple goals, ensuring that the different solutions are spread out evenly and are computationally efficient. it is widely used in various engineering fields [6] and has more recently been applied to solve issues related to planning for multiple objectives in distributed energy resources (der) [6,1]. another study [6] has provided a balanced solution for goals like reducing power loss, deviations in node voltage, voltage stability index, and voltage constancy margin. additionally, topsis has been combined with a metaheuristic technique for solving multiobjective problems [1]. this research work has looked into a way to arrange the charging of electric vehicles with multiple goals. the aim is to propose the best charging plan that can minimize both (1) changes in power usage (2) the overall cost of charging and discharging. the research work has used topsis method to create a model for scheduling evs with multiple objectives (mom). this approach has been compared with a simpler model that focuses on just one goal, and it has been tested with different levels of ev usage. this scheduling plan has been applied to a 38-node distribution system and the results have been thoroughly evaluated through simulations. the paper has been organized into sections covering the modelling of ev power demand, stating the goals, using the topsis method, setting up the optimization plan, and summarizing the outcomes from the simulations. 2. literature review optimizing transportation and logistics efficiency focuses on improving vehicle routes to reduce costs and minimize environmental impacts. this review examines various methods and algorithms used to optimize vehicle paths, highlighting the need for innovative approaches in response to growing global demand for effective network. as electric vehicles (evs) gain popularity due to environmental concerns and energy shortages, a major challenge remains the lack of charging infrastructure. some researcher proposes a real-time, iot-based system 92 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu to enhance the existing ev charging network by forecasting demand and recommending charging stations based on cost and time. similarly, one of researcher use mobile data and genetic algorithms to optimize charging station locations, reducing energy waste and excess driving in urban environments like boston. some researcher focus on strategically placing ev charging stations in urban areas to minimize energy loss, stabilize voltage, and reduce land costs, using differential evolution and harris hawks optimization methods. some researcher suggests a fast-charging station model incorporating renewable energy and storage systems, which enhances profitability and resilience. some researcher proposes a two-stage method for identifying optimal charging station locations in hungary, using a comprehensive assessment of ev potential. some researcher introduces an agent-based simulation framework to evaluate charging infrastructure scenarios in a small swiss town, emphasizing the impact of pricing on charging behavior and infrastructure viability. some researcher uses fuzzy logic and analytic hierarchy processes to select optimal sites for charging stations, while a researcher develops a model for strategic placement of public charging stations based on driver behavior in beijing. some researcher employs a hierarchical probabilistic forecasting method to predict ev loads across different regions, and some researcher analyses the challenges of expanding ev infrastructure in multi-unit residential buildings in british columbia, proposing policy interventions. overall, the review highlights that optimizing vehicle paths is a complex field requiring advanced algorithms and technologies. future research should focus on real-time data integration, sustainability, and ranger collaboration between academia and industry to drive innovation in vehicle route optimization. table 1 comparison list of literature review on ev charging stations optimization reference focus area method used key contributions [21] iot used for ev charging php, iot sensors, cloud computing, linux improves charging efficiency and reduces waiting times. [22] finding best locations for ev stations mobile data tracking, genetic algorithm cuts down on driving distance, energy waste, and station numbers. [23] ev charging station design estimation methods, evolutionary algorithms optimizes energy use, voltage stability, and land costs. [24] designing fast-charging stations simulations, genetic algorithm boosts profitability and reliability with renewable energy. [25] strategic ev station placement multi-criteria analysis, hexagonal evaluation finds the best locations for stations in cities. [26] ev charging simulation spatial data, agent-based modelling evaluates cost-effectiveness and power grid impacts. [27] choosing ev station sites fuzzy logic, decision-making tools chooses sites based on sustainability and other factors. [28] planning public ev charging stations deterministic models, location planning plans station placement to reduce driver stress and range anxiety. [29] forecasting ev load stochastic models, data aggregation improves accuracy of load predictions by up to 9.5%. [30] ev charging in urban areas causal loop diagrams (cld) helps create policies for urban ev charging. proposed optimizing ev routes grid integrated electric car charging optimization topsis and grey wolf optimization grid integrated electric car charging optimization using topsis and grey wolf optimization 93 3. assumptions for ev charging optimization here are some simplified assumptions for optimizing electric vehicle (ev) charging: ▪ charging stations: charging stations are well-placed in the best possible locations, and the number and locations of these stations are already known. ▪ charging demand: the need for charging depends on how far an ev drives, and the likelihood of different travel distances follows a specific pattern (rayleigh distribution). ▪ evs: each ev operates independently, has some level of smart technology, and can communicate with other evs. ▪ users: drivers of evs will manage their energy use, choose the most suitable charging station, and know their charging needs, destination, and how much charge they have left. ▪ charging process: charging can be either fast or slow, with a fixed rate, and each ev typically charges for 15 minutes. ▪ uncertainties: unexpected events or uncertainties are not taken into account. ▪ traffic: real-time traffic information is available and can be used to optimize charging decisions. when optimizing ev charging stations for long-term profit, we need to consider several important factors, especially related to scalability and battery health: a) scalability: expanding infrastructure: as more people use evs, charging stations must expand efficiently. this means carefully planning where to add new charging points, upgrading existing ones, and making sure they are well distributed to meet future demand. keeping up with technology: charging stations need to be ready for new technologies like ultrafast or wireless chargers and compatible with future evs. planning for these changes helps avoid outdated technology. smart grid integration: charging stations should be integrated with the electric grid to balance electricity use. smart charging can adjust rates based on grid capacity, electricity prices, and demand, reducing costs and increasing profit. b) battery health managing charging speed: fast charging is convenient but can wear out batteries faster, affecting both ev performance and customer satisfaction. offering different charging speeds and educating users on best practices can help maintain battery life. smart charging algorithms: using intelligent algorithms that adjust charging based on the battery’s health can help prolong battery life. this involves tracking the battery condition and adjusting charging speeds accordingly. educating users and providing incentives: encouraging users to opt for slower charging when possible or charge during off-peak times can help preserve battery health and reduce the burden on the grid. c) long-term economic and environmental impact analyzing costs and benefits: while slower charging and better battery management might lower immediate profits, they can lead to long-term benefits like happier customers, fewer battery replacements, and increased loyalty. sustainability and regulations: promoting practices that protect battery health also aligns with environmental goals and regulatory requirements, which can affect the longterm profitability of charging stations. d) stochastic optimization to handle uncertainty including battery health in optimization models: the optimization approach can be extended to include battery health as a key factor in deciding charging rates, energy buying strategies, and pricing. 94 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu simulating different scenarios: running simulations with different scenarios, such as the rate of ev adoption, advancements in battery technology, and changes in energy markets, can help plan for future scalability and battery management. 4. comparison with other optimization algorithms genetic algorithm (ga): ga is good at searching through large sets of possible solutions but tends to be slower and needs more computational power. it can also get stuck on suboptimal solutions because it sometimes converges too quickly. particle swarm optimization (pso): pso, like gwo, is inspired by social behavior. however, it might not always strike a good balance between searching for new solutions and refining existing ones, which can lead to getting stuck on suboptimal solutions. simulated annealing (sa): sa is effective at avoiding suboptimal solutions, but it can take a long time to find the best solution, especially when dealing with complex problems. differential evolution (de): de works well for certain types of optimization problems but often requires careful tuning of parameters and can be more computationally expensive. ant colony optimization (aco): aco is great for solving problems where the goal is to find the best combination of options, but it can be complicated to set up and often needs more iterations to find a solution, making it less efficient for problems requiring continuous optimization. 5. the superiority of this work over other optimization algorithms to explain why the technique for order preference by similarity to ideal solution (topsis) and grey wolf optimization (gwo) are better than other optimization methods, we should compare them based on key features like efficiency, speed of finding solutions, handling multiple goals, and robustness. table 2 comparison list of topsis and gwo to other methods factor topsis grey wolf optimization (gwo) other algorithms simplicity and ease of use. easy to use and understand; involves basic calculations. simple setup; easy to program and apply. many traditional algorithms are more complicated. convergence speed fast for ranking tasks; not specifically for optimization. quickly finds good solutions by effectively searching the solution space. varies; some algorithms are slower. multi-objective handling great for handling multiple criteria or objectives. good at solving problems with multiple goals. many require special modifications. exploration vs. exploitation n/a (doesn't search like optimization algorithms). balances searching for new solutions and refining known good ones. many algorithms struggle to balance this. robustness and flexibility works well in many decision-making situations. strong against getting stuck on poor solutions; adaptable to different types of problems. often less flexible or need tuning. scalability scales easily with different numbers of criteria. can handle large and complex problems. depends on the specific algorithm. computational cost low cost; involves simple matrix operations. low to moderate, depending on problem size. some algorithms can be very costly. grid integrated electric car charging optimization using topsis and grey wolf optimization 95 6. energy requisite modeling of evs this research work has looked into how to plan the charging of electric vehicles when they are parked in a housing parking lot. the assumption is that all the cars become accessible in the late afternoon after people come back from work till the next day when they head out again. a charging coordinator (cc) is in charge of managing the schedule, making sure the evs get charged optimally. when an ev arrives at the parking lot, the owner tells the cc details like how much charge is remaining in the battery, information about the evs battery like capacity, how far it can drive on a full charge (aer or allelectric range), and when it needs to leave. with this information, the cc can plan the charging schedule to meet the energy needs of all the evs. to figure out how electric vehicles (evs) are typically used, the authors have used a simulation that considers a probability density function. it takes into account things like when the ev shows up and leaves, as well as how far it travels each day. it has also been assumed that the owners of plug-in electric vehicles prefer to have a fully charged battery before they head out. it has helped calculate how much charging is needed based on the total distance the ev would cover during the day, the initial charge level (state of charge or soc), and the charge level at the time to leave. the work mentioned in [7] has provided this info about how evs are typically used. here, soc (state of charge) means how much energy is still there in the ev battery when it arrives at the parking lot. to make sure that the battery lasts for a long time, a minimum soc of 20% has been set. the initial soc has been figured out based on how far the ev has travelled. if an ev has covered a distance represented as d and has an aer (all-electric range) of dr, the initial soc when it arrives, called soca arrival, is calculated like this: 1 r d soca d = − (1) to make sure an electric vehicle (ev) gets the right amount of charge, the owner has to tell the charging coordinator (cc) about the initial soc, just like people with regular fuel-based cars share details about their fuel needs. it has been assumed that the ev needs to have a full charge, so the required exit soc is cent percent. the energy needed to charge the ev battery depends on how much charge is remaining when it arrives. this energy has come from the utility, and it can be expressed as: (1 ) c r soca b e  − = (2) here, er represents the energy needed for a full battery charge, bc is the battery capacity, and η is the charging efficiency of the ev. in the charging mode of ev, the efficiency is 1/ηc & in discharging state, the efficiency is ηd. 96 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu 7. system design in the created model, the dso (distribution system operator) takes on the job of planning and organizing resources in the local power distribution network. fig. 1 shows how the dso interacts with its overseer upstream and the different players and parts downstream in the system [20]. fig. 1 connections among participants & dso 7.1. advanced metering infrastructure the advanced metering infrastructure (ami) is a present system for keeping track of & managing how much energy has been used. it includes smart meters, communication networks and systems for handling data, making it possible for utility providers and consumers to talk to each other. ami allows to exchange data in real-time, giving more detailed information about how we use energy. this technology makes things work more efficiently, helps with programs that respond to changes in energy demand, and gives consumers the power to make smart choices about how they use energy. 7.1.1. power line carrier communication smart meters these meters are connected at customers' homes, and they are of two types, one for single-phase and another for three-phase systems. the smart meters used by average and big customers can connect straight to the efficacy by using gprs. besides measuring the electricity used by individual customers, these smart meters also measure electrical parameters for every feeder in the key substation and distribution substation transformers of subordinate section rated (63/20 kv) & (20/0.4 kv). collecting all this data makes it easy to calculate how much energy is lost in every line in both the medium voltage & low voltage networks [20]. 7.1.2. data concentrators (dc) these devices are strategically positioned close to the substation rate 20 kv/ 400 v distribution transformers. their job is to keep an eye on all the combined data coming from smart meters in the low voltage (lv) network installations. these concentrators use grid integrated electric car charging optimization using topsis and grey wolf optimization 97 power line carrier communication (plcc) to talk to smart meters, making it easy to exchange data and create communication links with central systems that manage meter data. 7.1.3. the meter data management system the meter data management or repository systems work like a central hub. they gather and handle raw information from all meters, making sure to provide cleaned-up data to the distribution system operator and other application systems. 7.1.4. electric vehicle charging points charging points for ev at homes or workplaces, also known as charging plugs, have an electric plug for each system that comes with a power line carrier communication (plcc) modem. this modem sends information about the electric vehicle (ev) to a smart meter. to make this system even better, there is a proposed identification chip that can be installed in electric vehicles. when an electric vehicle (ev) is connected to a charging point, a special chip in the ev drives the signal to the smart meter. as soon as the smart meter detects that an ev is plugged in, it promptly shares details about the charging and discharging activities with the meter data management and repository. fig. 2 indicates the advanced metering infrastructure. fig. 2 advanced metering infrastructure 98 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu 7.2. system for the management of electric vehicles when electric vehicles (evs) are brought into the distribution network, a system is set up inside the distribution management system (dms). this system is called the electric vehicles management system and it is like a small part that works within the larger dms. the main job of evms is to plan and control when evs charge and discharge their batteries in a smart distribution network. to do this, evms gets information about the ev owners from the mdm system. it also gets data about charging-discharging from the mdm system and uses the geographical information system (gis) to give details about where things are on the network and where ev resources are located. the evms keeps a database that has information about the ev resources, their features, and what they have done in the past. if people with evs want to take part in charging or discharging events, they can sign up through a mobile app or a website. it is a straightforward process, as shown in fig. 3. fig. 3 illustration of ev management system 8. problem formulation of multiobjective function this section explains the objective function, the limitations or constraints, and setting up the plan with multiple goals using the topsis method in the new preparation policy. grid integrated electric car charging optimization using topsis and grey wolf optimization 99 8.1. objective functions and restraints 8.1.1. the valley filling model (vfm) this is a plan used to manage when electric vehicles (evs) charge or discharge in smart grids. the focus here is on making the most of times when electricity demand is low, often called valleys, in the overall electricity usage pattern. by smartly adjusting when evs charge or discharge during these periods, the vfm (valley filling model) aims to improve how the grid is balanced, to make the most efficient use of resources, and possibly to lower the overall energy costs. this approach will help evs fit in smoothly with the larger energy system supporting sustainability and keeping the grid stable. in other words, it is about reducing the gap between how much electricity is used at a particular moment and the average amount used, which is called load variations [19]. where, 224 1 1 ( )t t sys syst f s s = = − (3) 2 2( ) ( )t t t sys sys ress l q= + (4) ,1 vnt t t sys res i evi l l l t = = +  (5) in this situation, where nv stands for the total number of vehicles and savg is the normal apparent load of the system, eqn. (4) signifies the whole actual system power, called st sys. eqn. (5) shows that the entire active power demand (lt sys), which is the sum of domestic load (lt res) and the total electric vehicle (ev) load (lt i,ev) at any given time t. in this study, one-hour interval has been considered and is denoted by t. 8.1.2. minimum charging or discharging cost model (mcm) the charging cost and discharging cover all the money spent by the charging controller (cc). this overall cost includes what it takes to charge, the money earned from discharging, and the costs linked to the wear and tear on the battery. the charging and discharging cost is expressed as: , 1 1 v i pn t t charge i t c x = = =   (6) here, λt represents the electricity cost at time t, and x represents the rate of charging / discharging at time t. the cost associated with battery degradation is expressed as: , 1 , vn bat c i l t deg disi l c i c b c c e b b dod  =  + =     (7) here, cbat represents the battery cost, bc,i denotes the capacity of battery of the electric vehicle, cl is the labour cost for replacement the battery, and dod refers to the discharge depth . in this research, cbat = 300$ / kwh, cl = 240$, bl = 5000 at eighty percent discharge. consequently, the total cost of charging/ discharging acquired by the charging controller (cc) can be stated as: 2 charge degf c c= + (8) 100 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu 8.1.3. multi objective model the purpose of objective in this structure is crafted to concurrently enhance both load variance and the whole cost acquired by the charging controller (cc). thus, the function of objective is expressed as: 3 1 2min( )f f f= + (9) 8.2. multi-objective formulation the multi-objective formulation using technique for order of preference by similarity to ideal solution topsis is a method for solving problems with multiple conflicting goals. it looks at various criteria all at once, aiming to find the best solution considering these criteria. topsis involves comparing different solutions to both an ideal solution (where all criteria are maximized) and a nadir solution (where all criteria are minimized). solutions are then ranked based on how close they are to the ideal solution and how far they are from the nadir solution. in the case of optimizing the charging and discharging model mentioned earlier, topsis has been used to find a set of solutions that balances minimizing load variance and reducing the total cost for the charging controller (cc). this method allows decision-makers to choose a solution from the pareto front that best suits their preferences and goals. 9. key advantages of topsis and gwo over other algorithms 9.1. topsis advantages: ▪ simple and clear: provides an easy way to rank options by comparing them to the best and worst outcomes, making it straightforward for decision-making. ▪ good for multiple criteria: designed to handle decisions with many criteria, especially when there are conflicting objectives. ▪ efficient to compute: requires less computing power than many other methods, using mainly simple calculations. 9.2. grey wolf optimization (gwo) advantages: ▪ balanced search: effectively balances finding new solutions and improving existing ones, reducing the chance of getting stuck in suboptimal solutions. ▪ quick convergence: finds solutions quickly by mimicking the grey wolves' hunting strategy. ▪ flexible and reliable: works well for various types of optimization problems and is less likely to get trapped in local optima. ▪ easy to use: simpler to implement than many other complex algorithms. grid integrated electric car charging optimization using topsis and grey wolf optimization 101 10. flowchart 102 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu fig 4 flow chart of private ev 11. optimization structure all optimizations in this study have used gwo, which is a metaheuristic algorithm motivated by how grey wolves hunt [14]. in the grey wolves hunting process, leaders alpha (α), beta (β), and delta (δ) exchange information about each other's positions. ( ) ( )1 . px k x k a d+ = − (10) ( ) . pd c x k x k= − (11) k stands for the current iteration, x stands for the position of grey wolf, px stands for the position of prey, and d stands for prey distance. the formula of vectors a and c are as follows: 12 .a a r a= − (12) 22.c r= (13) grid integrated electric car charging optimization using topsis and grey wolf optimization 103 where r1 and r2 are random vectors. its range is [0, 1], and the value of a linearly decreases from 2 – 0 of iterations. the location of every wolf is simplified as follows: 1 ( 1) ( 1), [ , , ] ( ) pi p x k x p length p     + = + (14) 12. simulation results and discussion in this section, the study has looked into how to best include electric vehicles (evs) in a 38-node bus system, presented in figure 4. the focus is on the residential area, where evs are only supposed to be present. the details about the 38-node system and residential electricity usage are taken from a source [20]. the power factor for homes is assumed to be 0.9, and a 1000 kva transformer supplies power to the residential area. a 3-tier pricing system has been considered as well as 5 types of evs, along with a domestic charger that can handle 3.33 kw for charging and discharging of evs. assuming that households use a maximum of 4 kw, there are 230 houses on the residential side [3]. with an average of 2.12 vehicles per house, it can be found that there are a total of 488 vehicles in the residential area [15]. it has been assumed that these evs are spread out evenly across the residential nodes [7]. the driving patterns for these vehicles are taken from a particular source. fig. 5 38-node bus distribution system in this study, it has been figured out when and how electric vehicles (evs) should charge using a method called topsis. to show that topsis works well, its results have been compared with two other methods, vfm and mcm. different levels of evs in the residential area have been considered, which is the ev penetration (20%, 40%, 60%, 80%). ev penetration [31] is about how many evs are there. the aim is to find the most 104 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu evs that can be there without causing problems for the power system, like overloading transformers or lines or messing with the voltage. the limits for that are mentioned table 3 [9]. table 3 range of voltage, transformer and line loading range of voltage range of transformer loading range of line loading 1 p.u. (upper limit) 1000 kva line no. 14 (6 to 26) 1.5 p.u. 0.93 (lower limit) 1000 kva line no. 19 (30 to 31) 0.5 p.u. table 4 illustrates how different strategies and electric vehicle (ev) numbers impact power lines, peak power demand, and energy losses. vfm can easily handle 80% evs, while mcm copes well with 40%. mom accommodates 60% evs without infrastructure issues. vfm keeps peak demand below 952.17 kva, whereas mcm surpasses this when evs reach 60%. network losses rise with more evs; mom losses fall between vfm and mcm, with mcm losses increasing notably as evs rise. in figure 5, the graph shows how electric vehicle (ev) scheduling impacts [32] the transformer load profiles with different strategies and ev numbers. for voltage and frequency management (vfm), scheduling helps smooth out peaks and valleys, resulting in a more consistent load profile at all penetration levels. with mixed-integer linear programming (mcm), evs assist in filling valleys and shaving peaks at low ev penetration. however, at higher penetration (60% and 80%), mcm introduces a new peak due to its objective of minimizing charging/ discharging costs. the mom scheduling from the topsis approach achieves a balance between the objectives of vfm and mcm, falling the dissimilarities between peak and valley loads while ensuring the morning peak stays below 1000 kva transformer limit. table 4 effect of different ideas under various penetration charging strategy level of presentation capacity of line peak load in kva losses in mw line no. 14 line no. 19 base case 0 64.70% 67.90% 952.18 1.84 vfm 20% 57.91% 62.01% 854.54 1.85 40% 54.61% 67.89% 806.01 1.88 60% 54.71% 52.61% 809.47 1.93 80% 57.61% 67.41% 849.7 1.97 mcm 20% 61.41% 66.41% 910.63 1.86 40% 62.91% 66.01% 927.18 1.9 60% 70.01% 112.01% 1032.01 1.98 80% 88.01% 141.21% 1294.71 2.06 mom 20% 61.11% 64.21% 901.39 1.86 40% 61.11% 64.21% 901.39 1.89 60% 62.41% 94.61% 923.33 1.96 80% 66.91% 102.61% 989.85 1.99 table 5 presents a comparison of several scheduling methods according to load variance and charging/discharging expenses. at whatever degree of ev penetration, vfm exhibits superior load variance over mcm. to maximise benefits, the vfm strategy is to charge grid integrated electric car charging optimization using topsis and grey wolf optimization 105 when costs are low and discharge when costs are high. however, mom optimizes evs to minimize charging costs while still achieving a flat load profile. for a given ev penetration, mom achieves a trade-off between better load variance over mcm and cheaper charging/ discharging costs over vfm. with the topsis approach, solutions obtained are favorable for both smoothing out load variations and minimizing charging costs. this means achieving a substantial ev presence while maintaining an advantage in load variance and charging expenses. table 5 comparison list of various objectives level of penetration charging plan total cost of daily charging load difference 20% vfm 58.59 3.054 x 105 mcm 37.87 4.47 x 105 mom 45.51 4.01 x 105 40% vfm 144.08 6.72 x 104 mcm 99.29 2.78 x 105 mom 131.66 2.01 x 105 60% vfm 285.56 6.44 x 104 mcm 163.86 5.01 x 105 mom 239.1 1.91 x 105 80% vfm 434.27 9.23 x 104 mcm 207.26 1.01 x 106 mom 346.53 2.85 x 105 fig. 6 different changing models of load profiles 106 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu thus, the study has suggested that by using mom with the topsis approach, a significant number of evs into the system can be introduced while maintaining a stable electricity load and keeping charging costs [33] in check. 13. conclusion this paper has analyzed a multi-objective optimization framework for effectively employing the topsis method for scheduling electric vehicles (evs). gwo has been used to manage the optimization. the research work has compared the effectiveness of multi-objective scheduling against a single-objective optimization approach. the findings have revealed that voltage and frequency management (vfm) excels at reduced load variance, while mixed-integer linear programming (mcm) performs better in terms of charging/ discharging costs. however, the topsis approach provides balanced results, combining the advantages of both objectives. this approach can strike a balance, guaranteeing significant ev integration with positive results for both the goals. the efficiency of the proposed strategy has demonstrated by applying this technique to a test case. topsis is useful for decision-making problems that involve multiple criteria, as it allows for quick and efficient ranking of different options. grey wolf optimization (gwo) is very effective for finding the best solutions in optimization problems because it balances searching for new solutions and refining known ones, converges quickly, is reliable, and easy to implement. when used together, topsis and gwo create a strong approach for solving complex optimization problems, combining simplicity, efficiency, and flexibility in a way that many traditional algorithms do not. to ensure the long-term success of ev charging stations, a comprehensive approach is needed that balances scalability and battery health. this means planning for growth while keeping customers satisfied and operations sustainable by considering long-term effects on profitability and battery life. references [1] m. sharif and h. seker, "smart ev charging with context-awareness: enhancing resource utilization via deep reinforcement learning", ieee access, vol. 12, pp. 7009-7027, 2024. [2] m. sharif, g. lückemeyer and h. seker, "context aware-resource optimality in electric vehicle smart2charge application: a deep reinforcement learning-based approach", ieee access, vol. 11, pp. 88583–88596, 2023. [3] d. m. doe, d. chen, k. han, y. dai, j. xie, and z. han, "real-time search-driven content delivery in vehicular networks for ar/vr-enabled autonomous vehicles", in proceedings of the 2023 ieee/cic international conference on communications in china (iccc), 2023, pp. 1-6. [4] u. demir, g. akgun, m. c. akuner, m. pourkarimi, o. akgun and t. c. akinci, "an innovative approach to electrical motor geometry generation using machine learning and image processing techniques", ieee access, vol. 11, pp. 48651-48666, 2023. [5] f. giordano, c. diaz-londono and g. gruosso, "comprehensive aggregator methodology for evs in v2g operations and electricity markets", ieee open j. veh. technol., vol. 4, pp. 809-819, 2023. [6] m. a. beyazit, a. k. erenoğlu and a. taşcıkaraoğlu, "scheduling of mobile charging stations for fair electric vehicle charging", in proceedings of the 2023 international conference on smart energy systems and technologies (sest), 2023, pp. 1-6. [7] f. j. y. zou, x. zhang and b. zhang, "online optimal dispatch based on combined robust and stochastic model predictive control for a microgrid including ev charging station", energy, vol. 247, p. 123220, 2022. grid integrated electric car charging optimization using topsis and grey wolf optimization 107 [8] r. guo and w. shen, "an enhanced multi-constraint state of power estimation algorithm for lithiumion batteries in electric vehicles", j. energy storage, vol. 50, p. 104628, 2022. [9] r. r. kumar, p. guha and a. chakraborty, "comparative assessment and selection of electric vehicle diffusion models: a global outlook", energy, vol. 238, p. 121932, 2022. [10] a. kapoor, v. patel, a. sharma and a. mohapatra, "centralized and decentralized pricing strategies for optimal scheduling of electric vehicles", ieee trans. smart grid, vol. 13, no. 3, pp. 2234-2244, may 2022. [11] t. long, q.-s. jia, g. wang and y. yang, "efficient real-time ev charging scheduling via ordinal optimization", ieee trans. smart grid, vol. 12, no. 5, pp. 4029-4038, sep. 2021. [12] j. liu, g. lin, s. huang, y. zhou, y. li and c. rehtanz, "optimal ev charging scheduling by considering the limited number of chargers", ieee trans. transport. electrific., vol. 7, no. 3, pp. 1112–1122, sep. 2021. [13] t. panayiotou, m. mavrovouniotis and g. ellinas, "on the fair-efficient charging scheduling of electric vehicles in parking structures", in proceedings of the 2021 ieee international intelligent transportation systems conference (itsc), indianapolis, in, usa, 2021, pp. 1627-1634. [14] r. das, y. wang, k. busawon, g. putrus and m. neaimeh, "real-time multi-objective optimization for electric vehicle charging management", j. cleaner prod., vol. 292, p. 126066, 2021. [15] w. yin, z. ming and t. wen, "scheduling strategy of electric vehicle charging considering different requirements of grid and users", energy, vol. 232, p. 121118, 2021. [16] s. woo, s. bae, and s. j. moura, "pareto optimality in cost and service quality for an electric vehicle charging facility", appl. energy, vol. 290, p. 116779, 2021. [17] m. jafari, a. kavousi-fard, t. niknam and o. avatefipour, "stochastic synergies of urban transportation system and smart grid in smart cities considering v2g and v2s concepts", energy, vol. 215, p. 119054, 2021. [18] s. liu, x. xia, y. cao, q. ni, x. zhang and l. xu, "reservation-based ev charging recommendation concerning charging urgency policy", sustain. cities soc., vol. 74, p. 103150, 2021. [19] m. rezaeimozafar, m. eskandari and a. v. savkin, "a self-optimizing scheduling model for largescale ev fleets in microgrids", ieee trans. ind. informat., vol. 17, no. 12, pp. 8177-8188, dec. 2021. [20] k. zhou, l. cheng, x. lu and l. wen, "scheduling model of electric vehicles charging considering inconvenience and dynamic electricity prices", appl. energy, vol. 276, p. 115455, 2020. [21] sun, p., r. bisschop, h. niu and x. huang, "a review of battery fires in electric vehicles", fire technol., vol. 56, pp. 1361-1410, 2020. [22] g. f. savari, v. krishnasamy, j. sathik, z. m. ali and s. h. abdel aleem, "internet of things based real-time electric vehicle load forecasting and charging station recommendation", isa trans., vol. 97, pp. 431-447, 2020. [23] m. m. vazifeh, h. zhang, p. santi and c. ratti, "optimizing the deployment of electric vehicle charging stations using pervasive mobility data", transp. res. part a policy pract., vol. 121, pp. 75-91, 2019. [24] a. pal, a. bhattacharya and a. k. chakraborty, "allocation of electric vehicle charging station considering uncertainties", sustain. energy, grids netw., vol. 25, p. 100422, 2021. [25] j. domínguez-navarro, r. dufo-lópez, j. yusta-loyo, j. artal-sevil and j. bernal-agustín, "design of an electric vehicle fast-charging station with integration of renewable energy and storage systems", int. j. electr. power energy syst., vol. 105, pp. 46-58, 2019. [26] c. csiszár, b. csonka, d. földes, e. wirth and t. lovas, "urban public charging station locating method for electric vehicles based on land use approach", j. transp. geogr., vol. 74, pp. 173-180, 2019. [27] m. pagani, w. korosec, n. chokani and r. abhari, "user behaviour and electric vehicle charging infrastructure: an agent-based model assessment", appl. energy, vol. 254, p. 113680, 2019. [28] y. ju, d. ju, g. e. d. santibanez, m. giannakis and a. wang, "study of site selection of electric vehicle charging station based on extended grp method under picture fuzzy environment", comput. ind. eng., vol. 135, pp. 1271-1285, 2019. [29] l. pan, e. yao, y. yang and r. zhang, "a location model for electric vehicle (ev) public charging stations based on drivers’ existing activities", sustain. cities soc., vol. 59, p. 102192, 2020. [30] l. buzna et al., "an ensemble methodology for hierarchical probabilistic electric vehicle load forecasting at regular charging stations", appl. energy, vol. 283, p. 116337, 2021. [31] b. bhattacharjee, p. k. sadhu, a. ganguly and a. k. naskar, "using fuzzy systems for optimal network reconfiguration of a distribution system with electric vehicle charging stations and renewable generation", microsyst. technol., vol. 30, no. 10, pp. 1381-1392, 2024. 108 s. ghorui, b. bhattacharjee, a. chakrabarti, p. k. sadhu [32] b. bhattacharjee, p. k. sadhu, a. ganguly, a. k. naskar and s. p. bihari, "photovoltaic integrated optimized energy storage drives for electric vehicles", j. energy storage, vol. 98, p. 113098, 2024. [33] b. bhattacharjee, p. k. sadhu, a. ganguly, and a. k. naskar, "photovoltaic energy based fast charging strategy for vrla batteries in small electric vehicles for sustainable development", microsyst. technol., vol. 30, no. 2, pp. 141-153, 2024. 11151 facta universitatis series: electronics and energetics vol. 36, no 2, june 2023, pp. 239-251 https://doi.org/10.2298/fuee2302239s © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper strength analysis of a blade with different cross-sections* bader somaiday1, ireneusz czajka1, muhammad a. r. yass2 1agh university of science and technology, krakow, poland 2university of technology, baghdad, iraq abstract. the efficiency of horizontal axis wind turbine (hawt) blades is examined in this paper concerning the effect of cross-section airfoil type. three dif-ferent airfoils were examined: symmetric (naca 4412), asymmetric (naca 0012), and supercritical (naca 4412). (eppler 417). the anal-yses that were performed combined theory and experiment. theoretical analyses were carried out using fortran 90 code and the blade element momentum-based qblade code. the blade was created using solidworks software and a 3d printer for testing purposes. the findings of experi-mental tests supported the conclusions of the theory. research revealed that the eppler 417 blade, which has a supercritical airfoil, performed better than other examined objects. naca 4412, naca 0012, and eppler 417 each have a power coefficient of 0.516, 0.492, and 0.510. according to the experimental data, the eppler 417 airfoil outperforms other air-foils in terms of power and speed reduction. to calculate the deformation and stresses of the three blades with various cross sections, cfd analysis was done in ansys workbench. the cfd results showed that naca 4412 has the highest strength but eppler 417 was considered the optimum cross-section based on power generation and acceptable stress values. key words: hawt, cfd analysis, optimum power coefficient, qblade code 1. introduction the aerodynamic efficiency of an airfoil is defined by the lift-to-drag ratio. it achieves the highest values at a specific angle of attack, and the value of this angle varies between airfoils. [2] the lift-to-drag ratio depends on zero-lift drag, aspect ratio, and span efficiency and is independent of weight. the use of airfoil in a wind turbine is no more limited than in an aircraft wing because a wind turbine operates at a lower speed than an aircraft. [3] there have been many theoretical and scientific studies on the performance of wind turbine blades. received september 29, 2022; revised december 11, 2022; accepted january 06, 2023 corresponding author: bader somaiday agh university of science and technology, krakow, poland e-mail: somaiday@agh.edu.pl * an earlier version of this paper was presented at the 7th virtual international conference science, technology and management in energy (energetics 2021), belgrade, serbia, december 16-17 2021 [1]. mailto:somaiday@agh.edu.pl 240 b. somaiday, i. czajka, m. a. r. yass symbols a axial factor á angular factor cd drag coefficient cl lift coefficient cp power coefficient n number of revolutions of rotor per minute (rpm) p power (w) r radius (m) r radius of turbine rotor (m) u wind speed (m/s) 𝛼 angle of attack (degree) 𝜆 tip speed ratio φ relative flow angle (degree) ω angular velocity of the rotor(rad/s) acronyms cfd computational fluid dynamics hawt horizontal axis wind turbine bem blade element momentum naca national advisory committee for aeronautics fem finite element method urans unsteady reynolds averaged navier-stokes [4] this paper investigated an aerodynamic performance evaluation system using two groups of naca profiles which were used in a series of five-digit naca (63-221, 65415; 23012,23021) and four-digit naca (2421, 2412,4412, 4424) for three hawt blades. the same airfoils were used along the entire blade. a computer pro-gram was developed to automate the entire procedure. their results show that the elementary power coefficient of naca 4412 and naca 23012 was higher than the other profiles. [5] in this paper, a stable and aerodynamic design using naca 4412 profile with blade length (800 mm) and power (600 w) with mini hawt was pro-posed. the length chord and twist angle distributions of the initial blade model were calculated. a reasonable compromise between high efficiency and good starting torque was obtained. the blades were developed using matlab software. the op-timized blade chord was reduced by 24% and the thickness by 44%. the power level of the optimized blade was significantly increased to 30% compared to the standard blade. [6] this paper explained the design and optimization of a small hawt blade using custom code. the blades were made using naca 4412, naca 2412 and naca 1812 at a wind speed of 5 m/s, which was the most frequent wind speed pre-vailing in the indian peninsula. based on a self-created code based on bem theory, an optimum blade profile was generated which performs with high efficiency using multiple airfoils. the twist angle distribution, chord distribution and other parame-ters for different airfoil sections along the blade were determined using the proposed code. for a rotor with a diameter of 4.46 m, a power factor of 0.490 and an output power of 0.56 kw was obtained. the blade analysis result obtained using q-blade software showed reliable agreement with the proposed code and wind turbine per-formance analysis. the power factor obtained using the matlab code was 0.490, which was very close to that obtained using q-blade (0.514). in addition, the differ-ence in output power between the two values was only 28.58 w. [7] the behaviour and performance of a multi-section hawt blade with and without a fence are researched in this paper. the multi-section hawt blade was designed using supercritical airfoils (sg6043, fx63-137s and fx66-s-196v). the overall performance of the multi-section blade was compared with the single-section naca4412 blade. numerical analyses were performed using the author's code (fortran 90) and the qblade package based on bem theory. the multi-pass vanes show an increase of about 8% in power factor compared to the single-pass vanes. the boundary layer theory was used to design the fences and their strength analysis of a blade with different cross-sections 241 position was de-termined experimentally. an increase in total power factor of about 16% with the use of fences and high flutter stability. [8] this paper investigated the aero-elastic behavior of horizontal axis wind tur-bine (hawt) flexible blades by using computational and aerodynamic models ap-proach. to study the unstable blade airfoil aerodynamic properties, the b-l (bed-does-leishman) dynamic stall model was added to the modified blade element mo-mentum (bem) model. [9] in this paper investigation of the aero-elastic model of multi-rotor hawt was done. the method used in this system was to integrate the single-rotor hawcstab2 with the multi-rotor tool hawc2. therefore, this method of fidelity linear time-invariant aero elastic modelling was verified by comparing the frequency responses of different rotors. [10] this paper studied the aero elastic be-havior of a mw (multi-megawatt) hawt is influenced by the integrity of the aero-dynamic simulation. the main purpose of this research is the comparison between engineering model results and cfd aero elastic simulations results that needs less empirical modeling. to investigate the influence of the aerodynamic models on the aero elastic results for large hawt, two distinct models (bemand cfd-based) were used. [11] the two-part study looks at horizontal axis wind turbines which have improved aero elastic performance and hence boost yearly energy output is proposed in this paper. the structural characteristics of a standard blade were then idealized using an adaptable shear. this development's power curve is evaluated, and it is proven to dramatically boost yearly energy output over traditional systems by 1.51 % than the maximum power at a wind speed of 15 m/s. [12] researchers developed the urans equations that were integrated with the fem in a flexible way to describe the aero-elastic behaviour of tjreborg horizontal axis wind turbine blades. at four different horizontal inflow wind speeds, this approach was validated by comparing simulated and experimental data. the aero-elastic behaviour of the tjreborg wind turbine was also estimated and studied for yaw angles of 10, 30, and 60 degrees. [13] this research was done by developing a horizontal axis wind tur-bine rotor blade model for showing the coupling effect of rotor bulk rotation and blade flexible motion. the model was created with lagrange's technique, as well as the blade was discretized utilizing the finite element method (fem). the two differ-ent relationships between aerodynamics wind and structural behavior are captured in this design. [14] researchers developed a wind speed model for n-blades of hori-zontal axis wind turbines with the considerations of wind shear and buildings shad-ow impacts. the systematic approach was utilized to calculate the wind shear, build-ing shadows, synthesis, and equivalent wind velocity disturbances elements, as well as their relative positions in the rotor disc region. [15] this paper investigated the influence of diagonally input upon the wake parameters of a hawt (horizontal axis wind turbine) inside a wind farm. a hawt with a generator limit of 30 kw and then rotor diameter of 10.0 m was employed in this work. a field study was used to analyse the influence of tilt angle on the energy and thrust efficiency of a hawt. on this foundation, the hawt's wake properties were investigated with various wind orientations and pitch angles. as a result, the peak power coefficients cp were 0.31, 0.33, and 0.27, respectively, and correlate to tip velocity ratios l= 7.5, 7.4, and 6.8 with pitch angles b= 0°, 2°, and 4°. the wind turbine experimental model predicts around 51% of annual power generation compared to the experimental research model. in this study, the behavior and performance of different blade cross-sections, symmetrical, asymmetrical and supercritical airfoils (naca0012, naca 4412 and eppler 417) were investigated experimentally and by ansys. the horizontal axis wind turbine blade design was performed using fortran 90 code and qblade software based on bem theory. 242 b. somaiday, i. czajka, m. a. r. yass 2. the blade cross-section table 1 shows the airfoil characteristics in cross sections and the airfoil shapes are shown in figure 1. the hawt rotor design parameters are shown in table 2. table 1 cross-section airfoils distribution airfoil max t/c max cl/cd naca 4412 12% at 30% 129.4 at 5.25° naca 0012 12% at 30% 75.6 at 7.5° eppler 417 14.2% at 38.35% 135.9 at 2.25° fig. 1 airfoils geometry table 2 parameter of design rotor diameter 1.07 m hub diameter 0.20 m number of blades 3 rated power 600 w cut in speed 2 m/s2 3. power coefficient fig. 2 shows maximum power that can be produced by wind flowing through the ring. [7]. the velocity around the disc is assumed to be constant (u2 = u3) with the assumption that the upstream and downstream pressures are equal. the equations yield the rotor power coefficient. equations [16]. 1 4 2 2 u u u + = (1) strength analysis of a blade with different cross-sections 243 1 2 1 u u a u − = (2) 2 1 (1 )u u a= − (3) 4 1 (1 2 )u u a= − (4) h h r r r r p dp dq= =   (5) 2 3 1 1 2 h r r p wind dqp c p r u  = =  (6) \ 3 2 8 (1 ) 1 cot h d p r r l c c a a d c         =  − −           (7) the tip speed ratio; 1 2 60 r n u   = (8) fig. 2 wind turbine actuator disk model 4. design and manufacturing blades a program in fortran (f.90) was written and the qblade package was used to calculate the aerodynamic data and power factor based on blade element momen-tum (bem) theory, as shown in tables 3, 4 and 5 and figure 3. solidworks software was used to design the 3d blade shapes (see figure 4). the developed models were fabricated on a 3d printer (see figure 5). due to the limited size of the printer's print area, the blades were divided into several sections and then combined. the blades with different profiles in sections (naca 4412, naca 0012 and eppler 417) were mounted to the wind turbine for testing as shown in figure 6. 244 b. somaiday, i. czajka, m. a. r. yass table 3 naca 4412 cross-section geometry position (m) chord (m) twist (deg) foil 1 0.00 0.167 43.42 naca 4412 2 0.10 0.156 23.14 naca 4412 3 0.17 0.136 16.72 naca 4412 4 0.27 0.109 10.91 naca 4412 5 0.37 0.090 7.42 naca 4412 6 0.47 0.076 5.11 naca 4412 7 0.57 0.066 3.47 naca 4412 8 0.67 0.058 2.25 naca 4412 9 0.77 0.052 1.30 naca 4412 10 0.87 0.046 0.56 naca 4412 11 0.97 0.042 -0.05 naca 4412 12 1.07 0.038 -0.56 naca 4412 table 4 naca 0012 cross-section geometry position (m) chord (m) twist (deg) foil 1 0.00 0.206 41.43 naca 0012 2 0.10 0.194 21.14 naca 0012 3 0.17 0.168 14.72 naca 0012 4 0.27 0.136 8.91 naca 0012 5 0.37 0.112 5.42 naca 0012 6 0.47 0.094 3.11 naca 0012 7 0.57 0.082 1.47 naca 0012 8 0.67 0.072 0.25 naca 0012 9 0.77 0.064 -0.69 naca 0012 10 0.87 0.057 -1.44 naca 0012 11 0.97 0.052 -2.05 naca 0012 12 1.07 0.048 -2.56 naca 0012 table 5 eppler 417 cross-section geometry position (m) chord (m) twist (deg) foil 1 0.00 0.283 47.42 eppler 417 2 0.10 0.266 27.14 eppler 417 3 0.17 0.231 20.72 eppler 417 4 0.27 0.186 14.90 eppler 417 5 0.37 0.153 11.42 eppler 417 6 0.47 0.129 9.11 eppler 417 7 0.57 0.112 7.47 eppler 417 8 0.67 0.098 6.25 eppler 417 9 0.77 0.087 5.31 eppler 417 10 0.87 0.079 4.55 eppler 417 11 0.97 0.072 3.94 eppler 417 12 1.07 0.066 3.44 eppler 417 strength analysis of a blade with different cross-sections 245 fig. 3 cross-section blades by qblade package fig. 4 cross-section blade by solidworks (a) naca 4412 blade (b) naca 0012 blade (c) eppler 317 blade fig. 5 3d printing process 246 b. somaiday, i. czajka, m. a. r. yass fig. 6 wind turbines (a) with naca4412 cross-section blades (b) with naca0012 cross-section blades (c) with eppler 317 cross-section blades the material assigned to the blades was carbon fiber and its properties are shown in figure 7. applied pressure was 14.25 mpa, 251 mpa, 986.4 mpa and 1370 mpa to derive the post-processing results of total deformation, equivalent stress and equivalent strain shown in table 7. fig. 7 carbon fiber properties strength analysis of a blade with different cross-sections 247 5. results and decisions the primary design element of a wind turbine blade is the cross-sectional area of the airfoil, which transforms the airflow velocity into a pressure distribution throughout the length of the blade. in this investigation, many profiles including symmetrical, asymmetrical, and supercritical have been used. when evaluating the performance of the profiles, the primary factors to consider are the amount of energy absorbed from the free stream, the maximum lift-to-drag ratio, and the angle of attack. not just the power factor peak, but also the airfoil's overall cross-sectional efficiency, was taken into account. figure 8 demonstrates that compared to the other profiles, the eppler 417 profile produced less drag. additionally, as shown in figure 9, the eppler 417 profile produced the greatest pressure dispersion in the second third of the blade radius. as indicated in fig. 10, the naca 4412 profile had the highest power factor value (cp = 0.516), followed by the naca 0012 (cp = 1.491), and the eppler 417 (cp = 0.510) profiles. however, according to figure 11, the eppler 417 profile had the highest overall efficiency. according to the experimental findings (see table 6), eppler 417 performs the best and produces the most power of the other profiles. cfd results showed that naca 4412 goes through less deformation and stresses (figures 12 to 17 and table 7). fig. 8 normal force distribution along the blades radius fig. 9 tangential force distribution along the blades radius 248 b. somaiday, i. czajka, m. a. r. yass fig. 10 the power coefficient of the cross-sections blades versus tip speed ratio fig. 11 the area under power coefficient curve (a) naca 4412 cross-section blade (b) naca 0012 cross-section blade (c) eppler 317 cross-section blade strength analysis of a blade with different cross-sections 249 table 6 experimental results wind speed (m/s) naca 4412 naca 0012 eppler 417 rpm power w rpm power w rpm power w 3 62 13 51 10 68 20 4.2 88 93 69 28 95 122 5.4 107 144 96 125 122 173 6.5 125 306 114 285 147 330 7.5 171 506 132 363 178 546 fig. 12 equivalent stress for naca 4412 at 251 pa and 1370 pa fig. 13 equivalent stress for naca 0012 at 251 pa and 1370 pa fig. 14 equivalent stress for eppler 417 at 251 pa and 1370 pa fig. 15 total deformation for naca 4412 at 251 pa and 1370 pa 250 b. somaiday, i. czajka, m. a. r. yass fig. 16 total deformation for naca 0012 at 251 pa and 1370 pa fig. 17 total deformation for eppler 417 at 251 pa and 1370 pa table 7 cfd results blade models applied pressure (pa) total deformation (mm) equivalent stresses (mpa) equivalent strain (mm/mm) eppler 417 14.25 0.1016 0.0653 3.49e-06 251 1.7888 1.1505 6.15e-05 986.4 7.0299 4.5213 2.42e-04 1370 9.7638 6.2796 3.35e-04 naca 0012 14.25 0.4138 0.1628 8.70e-06 251 7.2898 2.8688 1.53e-04 986.4 28.648 11.274 6.02e-04 1370 39.789 15.659 8.37e-04 naca 4414 14.25 2.05e-04 1.49e-04 8.13e-09 251 3.61e-03 2.62e-03 1.43e-07 986.4 1.42e-02 0.01028 5.63e-07 1370 1.97e-02 0.01427 7.81e-07 6. conclusions the effects of several cross-section airfoil types on the effectiveness of hawt blade efficiency were studied. analysis was done on three different airfoils: supercritical (eppler 417), asymmetric (naca 0012), and symmetric (naca 4412). the analyses that were performed combined theory and experiment. theoretical analyses were carried out using fortran 90 code and the blade element momentum-based qblade code. the findings of experimental tests supported the conclusions of the theory. at a short angle of attack, supercritical airfoils always produce the highest lift-to-drag ratio. eppler 417 has a high chord length and twist angle, so it generates the highest power. strength analysis of a blade with different cross-sections 251 since the cfd results show that naca 4412 has less total deformation and equivalent stress. this is due to the reason that naca 4412 has a greater cross-section area and stress is inversely proportional to the area. overall eppler 417 is the optimum blade cross-section as it produces more power and has less deformation than the naca 0012. references [1] b. somaiday, i. czajkal, m. a. r. yass, "the influence of cross-section airfoil on the hawt efficiency", in proceedings of the 7th virtual international conference on science, technology and management in energy (energetics 2021), belgrade, serbia, 16-17 2021, pp. 545-551. [2] c. bak et al., "wind tunnel test on wind turbine airfoil with adaptive trailing edge geometry", in proceedings of the 45th aiaa aerospace sciences meeting and exhibit, 2007, p. 1016. [3] d. g. hull, fundamentals of airplane flight mechanics, vol. 19. springer, 2007. [4] n. tenguria, n. d. mittal and s. ahmed, "evaluation of performance of horizontal axis wind turbine blades based on optimal rotor theory", j. urban environ. eng., vol. 5, no. 1, pp. 15-23, 2011. [5] s. a. kale and r. n. varma, "aerodynamic design of a horizontal axis micro wind turbine blade using naca 4412 profile", int. j. renew. energy res., vol. 4, no. 1, pp. 69-72, 2014. [6] f. javed, s. javed, t. bilal and v. rastogi, "design of multiple airfoil hawt blade using matlab programming", in proceedings of the ieee international conference renewable energy resources application, 2016, pp. 425-430. [7] a. h. muheisen, m. a. r. yass and i. k. irthiea, "enhancement of horizontal wind turbine blade performance using multiple airfoils sections and fences", j. king saud univ. eng. sci., 2021. [8] w. w. mo, d. y. li, x. n. wang, c. t. zhong, "aeroelastic coupling analysis of the flexible blade of a wind turbine", energy, vol. 89, pp. 1001-1009, 2015. [9] o. t. filsoof, a. yde, p. bøttcher and x. zhang, "on critical aeroelastic modes of a tri-rotor wind turbine", int. j. mech. sci., p. 106525, 2021. [10] m. sayed, l. klein, th. lutz and e. kramer "the impact of the aerodynamic model fidelity on the aeroelastic response of a multi-megawatt wind turbine", renew energy, vol. 140, pp. 304-318, 2019. [11] m. capuzzi, a. pirrera and p. m. weaver, "a novel adaptive blade concept for large-scale wind turbines. part ii: structural design and power performance", energy, vol. 73, pp. 25-32, 2014. [12] l. dai, q. zhou, y. zhang, s. yao, s. kang and x. wang, "analysis of wind turbine blades aeroelastic performance under yaw conditions", j. wind eng. ind. aerod., vol. 171, pp. 273-287, 2017. [13] d. ju and q. sun, "modeling of a wind turbine rotor blade system", j. vib. acoust. trans. asme, vol. 139, pp. 1–15, 2017. [14] s. wan, l. cheng and x. sheng, "numerical analysis of the spatial distribution of equivalent wind speeds in large-scale wind turbines", j. mech. sci. technol., vol 31, no. 2, pp. 965-974, 2017. [15] y. wang, y. kamada, t. maeda, j. xu, s. zhou, f. zhang and c. cai, "diagonal inflow effect on the wake characteristics of a horizontal axis wind turbine with gaussian model and field measurements", energy, vol 238, p. 121692, 2022. [16] m. ragheb and a. m. ragheb, "wind turbines theory-the betz equation and optimal rotor tip speed ratio", fundam. adv. top. wind power, vol. 1, no. 1, pp. 19-38, 2011. [17] m. a. r. yass, "highest power coefficient of horizontal axis wing turbine (hawt) using multiple airfoil section", test eng. manag., vol. 83, pp. 30029-30041, 2020. 10905 facta universitatis series: electronics and energetics vol. 36, no 2, june 2023, pp. 159-170 https://doi.org/10.2298/fuee2302159s © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper investigation of dye-sensitized solar cell performance based on vertically aligned tio2 nanowire photoanode * biraj shougaijam, salam surjit singh department of electronics and communication engineering, manipur technical university, takyelpat-795004, manipur, india abstract. in this work, we present our results related to the development of dyesensitized solar cells (dsscs) based on vertically aligned tio2-nanowire (nw) and ag nanoparticle (np) assisted vertically aligned tio2-nw (tat) photoanode fabricated by the glancing angle deposition (glad) technique on fluorine doped thin oxide (fto) substrates. the scanning electron microscopy (sem) analysis reveals that the ag-np assisted vertically aligned tio2-nw photoanode was successfully deposited on fto substrates. the average length and diameter of the nw have been measured to be ~ 350 nm and ~ 90 100 nm, respectively. moreover, transmission electron microscopy (tem) and x-ray diffraction (xrd) manifest the presence of small crystals of tio2 and ag. further, the absorption spectrum analysis reveals that the incorporation of ag-np in tio2-nw increases absorption in the visible region, but decreases the efficiency of the cell after the incorporation of the nanoparticle. the calculated bandgap of the annealed ag-np (30 nm) assisted tio2-nw (tat@30nm) sample from the photoluminescence (pl) graph is ~ 3.12 ev. finally, it is observed that the tio2-nw based dssc device shows better performance in terms of photo conversion efficiency (pce) compared to the tat@30nm photoanode based device, with an efficiency of ~0.61 % from the former and ~ 0.24 % from the latter. this reduction in the efficiency of tat@30nm based devices is due to the larger size of ag-np, in which the nanoaprticle acts as an electron sink and acts as a blocking layer. key words: dsscs, e-beam, nanowire, nanoparticle, tio2 received july 09, 2022; revised august 13, 2022; accepted september 05, 2022 corresponding author: biraj shougaijam department of electronics and communication engineering, manipur technical university, takyelpat-795004, manipur, india e-mail: biraj.sh89@gmail.com * an earlier version of this paper was presented at the international conference on micro/nanoelectronics devices, circuits and systems (mndcs 2022), january 29-31, 2022, national institute of technology silchar, india [1] 160 b. shougaijam, s. s. singh 1. introduction the number of natural disasters is rising daily due to the rapid climate change in the last few decades, directly or indirectly caused by carbon emissions from fossil fuels and the destruction of forest areas. therefore, it is important to develop a sustainable energy conversion device to overcome the issue of increasing energy demand. fossil fuels are one of the main sources of energy that will eventually run out, which will have an effect on the environment and the ecosystem in the area. as a result, scientists are always working to improve renewable energy sources like hydroelectricity, solar energy and wind energy. since a significant amount of sunlight penetrates the earth's surface, solar cells, among other energy sources, play a significant part in the generation of electrical energy. lots of design and development have been done on photovoltaic technology to maximize the conversion efficiency of sunlight. the most commonly used solar cell materials are silicon, perovskites, graphene, iii-v nitrites and organic dyes [1-6]. among these, dye-sensitized solar cells (dsscs) became attractive after o’regan and gratzel’s reported the outstanding properties of dsscs like the multicolor option, easy integration into building architecture, ease of fabrication, low cost and affordability [7]. similar to how plant chlorophyll performs photosynthesis, this solar cell's operation relies on the photo-electrochemical reaction, in which the dye molecule acts as a molecular electron pump by trapping the light. when light falls on the surface of the cell, the excited dye molecule is oxidized and transferring those excited electrons into the conduction band of a wide bandgap semiconductor, such as nanostructured tio2. the excited electron in the tio2 nanostructure is then transported to the counter electrode by the process of diffusion through the external circuit. again, the oxidized dye molecule present inside the cell is regenerated from iodine present in the redox electrolyte medium and further regenerated from iodine by reduction of triiodide on the counter electrode [8]. the four different modules that make up dsscs are photoanode, dye, electrolyte, and counter electrode. among these, the photoanode is crucial to the process of photon conversion and the dye sensitizer influences how well the dsscs work. the sensitizer/dye should possess broad and strong absorption from the visible to the near region. ruthenium compound is the most commonly used efficient and stable dye. even though these dyes have some disadvantage compared to eosin-y and porphyrin, they have excellent electron injection, higher absorption in the visible range, good stability and efficient charge transfer, thereby giving the highest efficiency [9, 10]. moreover, tio2 has a high bandgap, resistance to photo corrosion, and nontoxicity compared to other metal oxides like zno2, sno2, cu2o, wo3 and in2o3 [11-12]. naturally, tio2 crystal, which belongs to the transition metal oxides, can assume any of the three forms, i.e., anatase, rutile or brookite [13-14]. anatase tio2 is mainly employed to create photoanodes for dsscs because of its higher charge transport and stability. the power conversion efficiency (pce) of the dsscs is significantly impacted by the form and size of the tio2 nanoparticle. tio2 is a chemically inert substance because it has a bandgap of ~ 3.2 ev or less and does not induce chemical reactions in the absence of light. due to scaling laws, the chemical and physical properties of nanomaterials change as their geometrical dimension decreases [15]. so, there has been recent progress in the synthesis of tio2 nanomaterial like nanorods (nrs), nanowires (nws) and nanotubes (nts), which possess different properties because of the different synthesis techniques, unique nanostructure, and high surface-to-volume ratio that enhance the delocalized carrier charge particle, thereby investigation of dye-sensitized solar cell performance based on vertically aligned tio2 nanowire photoanode 161 increasing the charge transportation. this 1d nanostructure can be used in designing photoanodes for the dsscs application, which can enhance the efficiency through rapid electron transport. nanomaterial synthesis can be done in different ways, like the sol-gel method, the hydrothermal method, chemical vapour deposition (cvd) and physical vapour deposition (pvd) techniques, etc. [16-17]. furthermore, tio2-nw enhanced the performance of the energy-sensing because of more reaction sites due to the high surface area and larger extension of the depletion region. in addition to that, tio2-nw has confined conductive channels which can reduce charge recombination, hence enhancing charge transportation as compared to other bulk structures. yang et al. reported that porous tio2 tf was deposited by glancing angle deposition (glad) using e-beam deposition. also, it was reported that tio2 film has the largest internal surface area, which enhances the dye absorption of the dsscs [18]. wong et al. reported that tio2 photoanodes were prepared using the e-beam technology. it is also observed that the efficiency of 6.1% was achieved at an inclined glad angle of 73º which improves the light trapping nature of the tio2 photoanode as it is a columnar structure [19]. the highest reported pce of dsscs is ~ 14.2 %, which is fabricated using the chemical process on screen-printed tio2 film [20]. even though the efficiency of the dsscs is much lower than that of si solar cells, they have remarkable performance under low light intensity, which can be used in indoor lighting. so, in this work, the glad method was used to grow vertically aligned tio2-nw as photoanodes on fluorine-doped thin oxide (fto) for dssc application without using any catalyst. furthermore, it should be noted that the glad can be used to precisely control the shape, size, and thickness of the nanostructure [21]. the vertical tio2 nanostructure achieved from gald deposition enhances the efficiency by shortening the electron pathway through the vertical tio2-nw. further, an attempt has been made to put ag metal nanoparticles in the middle of the tio2-nw to enhance the photon absorption through surface plasmon resonance (spr). the spr effect mainly depends on the type of metal used, its shape and the size of the metal nanoparticle. both ag and au exhibit a strong spr effect in the visible region. however, the cost of the ag metal is comparatively lower as compared to au. again, ag-np is highly stable and can withstand corrosion and less oxidized [22]. it is noteworthy to mention that the ag nanoparticle can be used in various applications like supercapacitors, biosensors and other optoelectronic applications, etc [23-25]. therefore, an effort is made to develop dssc based on tio2-nw and ag-np embedded vertical tio2-nw photoanodes deposited by the glad method on fto substrates for the dssc application. the samples were analyzed using scanning electron microscopy (sem), transmission electron microscopy (tem) and x-ray diffraction (xrd) (rigaku ultima iv, cuka radiation, k = 0.1540) analysis for morphology and structural analysis, respectively. finally, the performance of two types of dsscs, i.e., tio2-nw and ag-np assisted tio2-nw photoanode based devices, is analyzed. 2. experimental details 2.1. materials both the tio2 and ag (both 99.999% pure) were procured from tecnisco advanced materials pte ltd, singapore. n719 ruthenium dye sensitizer (95% pure) was purchased from srl pvt. ltd, fto/glass (12-14 ω/cm2) from mti corporation, usa and iodolyte 162 b. shougaijam, s. s. singh hi-30 electrolyte were purchased from solaronix, switzerland. for the deposition of the tio2 and ag, the material is loaded into the crucible and put into the evaporation chamber. before creating the vacuum, the chamber was cleaned properly by applying acetone. further, the vacuum is created inside the chamber and the samples are inclined at 81° during the nw and np deposition. 2.2. photoanode preparation fto glass substrates having a resistivity of ~ 12-14 ohm/cm2 were properly cleaned sequentially by rinsing them in deionized water (di) (oxford lab fine chem llp (cas no. 7732-18-5)) for 1 minute each and drying them in the open air for 5 minutes before putting them inside the chamber. the vertically oriented tio2-nw and ag-np assisted vertically aligned tio2-nw (tat) are deposited on fto coated glass substrates by the glad using an e-beam evaporator (model no. smart coat 3.0, hhv india). this glad mechanism, which is installed inside the chamber, allows the change of the angle by moving the axis of it. in our previous work, the details of the fabrication process of tio2nw and tat samples were discussed [21]. here, the process is explained in brief. the samples are kept at an inclined angle of 81° and rotated at 30 rpm to form a vertically aligned tio2 nanostructure. in the first round of deposition, tio2-nw (350 nm) samples were deposited on an fto-coated glass (1 cm x 1 cm) substrate by employing the glad method. for another group of samples, tio2-nw (175 nm) was initially deposited on glass (1 cm x 1 cm). further, ag-np (30 nm) was deposited above the tio2-nw (175 nm). again, tio2-nw (175 nm) was deposited above the ag-np (30 nm)/tio2-nw (175 nm). finally, we achieved the staking of tio2-nw (175 nm)/ag-np (30 nm)/tio2-nw (175 nm) (tat@30nm) samples by employing the glad method. for every tio2 (30 nm) deposition, deposition was done for 12 minutes at a rate of ~ 0.6 å/sec and the ag (30 nm) deposition rate was kept constant at 0.8 å/sec for 7 minutes. the deposition rate and thickness of the deposited film were monitored through a digital thickness monitoring system in all the deposition process to control the film thickness precisely. similarly, vertically aligned tio2-nw with ag 60 nm (tat@60nm) and ag 90 nm (tat@90nm) samples are prepared using the same process and parameters. all these processes are performed under high vacuum conditions of ~ 2 x 10-5 mbar. the pressure of the chamber was maintained at ~ 6 x 10-6 mbar before the start of deposition. however, during the deposition, the pressure drops to ~ 2 x 10-5 mbar. further, the photoanode samples for dsscs fabrication are annealed at 500 °c for 3 hours. the samples were cooled down slowly and processed for dye loading. 2.3. dye preparation and counter electrode preparation 6mg of n719 (95%, srl pvt. ltd.) dye salt powder is mixed with a 0.5 mm concentration of ethanol using a vortex (ependorf mixmate) at 200 rpm for 20 minutes to make 10 ml of n719 dye solution. the resulting dye solution is kept for 1 day for stabilization, as shown in fig. 1 (inset). fig. 1 shows the absorption peak of the n719 sample being measured using a uv-vis spectrophotometer (an-uv-6500n antech), which reveals four bands at ~ 504 nm, ~ 376 nm and ~ 308 nm, with a shoulder peak at ~ 252 nm. the two peaks in the visible band are attributed to metal-to-ligand charge transfer (mlct). investigation of dye-sensitized solar cell performance based on vertically aligned tio2 nanowire photoanode 163 250 300 350 400 450 500 550 600 650 700 252 nm 308 nm a b so rp ti o n ( a .u ) wavelength (nm) n719 dye 504 nm376 nm fig. 1 shows optical absorption spectrum of the n719 dye sample the tio2-nw and tat coated fto glass samples are immersed in the n719 dye for 24 hours, which is kept at room temperature in a dark room. to remove the excess dye, the tio2 photoanode sample is washed gently with ethanol after taking it out of the dye solution and dried for 3 minutes in the open air. again, plastisol t/sp paste from the solaronix was coated on the fto substrate using the doctor-blade technique for making the counter electrode (ce). here, the 3m scotch tape covers all four edges of the sample by keeping a 2 x 2 cm2 space at the centre of the fto glass. this sample is placed in the furnace for annealing at 450ºc for 1 hour, which will activate the pt particles. 2.4. fabrication of dsscs the dye-sensitized tio2 photoanode and pt-coated counter electrode were preheated at 100 °c before being sandwiched together. this pretreated process will remove the moisture present on the surface of the photoanode and counter electrode. further, the pt activated counter electrode is sandwiched and sealed with the tio2 photoanode by using a paper clip to complete the dsscs module. lastly, the electrolyte solution was introduced in between the electrodes by capillary action. 3. results and discussion 3.1. sem analysis the morphology of the as-deposited tat@30nm sample was analyzed using a sem instrument, as shown in fig. 2 which shows the successful deposition of tat@30nm nanowires. the magnified sem image of tat@30nm sample is shown in fig. 2(b). the larger diameter nanowires indicated by dotted circle, shown in fig. 2(b), are built by cluster formation through shadowing effects during the deposition [26]. the average top diameter of the tat@30nm was measured and calculated from the magnified sem image and found to be ~ 72 nm, as shown in fig. 2(c). fig. 2(d) shows the cross-sectional image of tat@30nm. this image proves that vertical tat@30nm is successfully grown onto the fto substrate by employing the glad technique. it also reveals the 164 b. shougaijam, s. s. singh presence of ag-nps, which are indicated by blue dotted circles in the middle of the nws. the height of the tat nanowire is ~337 nm. a) b) 0 50 100 150 200 0 5 10 15 20 25 30 c o u n t diameter (nm) average= ~ 72.07 nm (c) ~ 337 nm (tio2-nw) ag c) ag (d) fig. 2 (a) the sem image of the as-deposited tat@30nm, (b) represent the magnified image showing the porous nature of the sample and (c) showing the calculated average diameter, (d) a cross-sectional image of the tat@30nm sample these vertical nanostructures enhanced the efficiency of the dssc solar cell by enhancing the surface area of the active layer as compared to thin-film [27]. moreover, the vertical nanostructures have beneficial effects for dsscs, since they have antireflection properties through the nanostructures that efficiently trap more light. therefore, this method can be employed for developing high surface area photoanode nanostructures for dssc applications and other optoelectronic applications. 3.2. tem analysis for tem analysis, the tio2 nanostructure layer deposited on the glass substrate was scrapped out using a doctor blade, which dispersed the scrapped-out powder into the acetone in a vial and ultrasonically sonicated the sample properly for a few minutes for good dispersion. finally, place a drop of sonicated solution onto the tem grid for tem analysis. the tem analysis of the tio2 and tat samples is shown in fig. 3 (a) and (b). the tio2-nws are successfully grown using the glad technique, as shown in fig. 3(a). the typical length measured from the nanowire image is ~ 259 nm and the arrow mark indicates the growth direction. further, the tem image of tat sample manifests the presence of ag-np assisted at the mid of the tio2-nw. the hr-tem images in inset (1) and (2) of fig. 3(b) show the investigation of dye-sensitized solar cell performance based on vertically aligned tio2 nanowire photoanode 165 presence of ag crystal and tio2 crystal. the measured lattice constant from the inset (1) is found to be ~ 0.35 nm, which corresponds to (101) crystal plan of anatase tio2 (jcpds no. 75-1753). from the inset (2), the measured lattice constant is found to be ~ 0.24 nm in the related crystal plane (111) of the ag crystal (jcpds no. 04-0783). ~ 259 nm 100 nm (a) a (101) ag (111) ~ 0.35 nm ~ 0.24 nm (1) (2) (b) fig. 3 (a) the tem image of the as deposited tio2-nw, b) tem image of annealed tat@30nm and the inset represent the magnified hr-tem image 3.2.1 xrd analysis the as-deposited tio2-nw and ag-np (30 nm, 60 nm and 90 nm) assisted vertically aligned tio2-nw samples are analyzed by x-ray diffraction (xrd). fig. 3(a) shows the xrd results of the as-deposited tio2-nw, tat@30nm, tat@60nm, and tat@90nm samples. the weak peaks observed at 2θ = 25.76˚, 37.58˚, 48.4˚ and 63.4˚ are attributed to tio2 crystals with the corresponding orientation of (101), (103), (200) and (204), respectively (jcpds no. 75-1753). the weak peaks may correspond to the small grain size of tio2 crystal grains. again, the peaks at 38.27˚, 34.72˚ and 77.33˚ are related to the (111), (220) and (310) planes of ag crystals (jcpds no. 04-0783). 30 40 50 60 70 80 in te n si ty ( a .u ) 2 degree tio2-nw tat@30nm tat@60nm tat@90nm r ( 1 1 0 ) r ( 1 1 1 ) a g ( 1 1 1 ) a g ( 1 1 1 ) a g ( 1 1 1 ) a g ( 2 2 0 )a ( 1 0 1 ) a ( 1 0 1 ) r ( 1 1 0 ) r ( 1 1 0 ) a g ( 2 2 0 ) r ( 1 1 1 ) a ( 1 0 1 ) a ( 1 0 1 ) r ( 1 1 0 ) a ( 2 0 0 ) a ( 2 0 0 ) a ( 2 0 0 ) a ( 2 0 0 ) r ( 1 1 1 ) r ( 1 1 1 ) a g ( 2 2 0 ) (a) 30 40 50 60 70 80 in te n si ty ( a .u ) 2 degree as-deposited tio2-nw annealed tio2-nw a ( 1 0 1 ) a ( 1 0 3 ) a ( 2 0 0 ) r ( 1 1 1 ) r ( 1 1 0 ) a ( 1 0 1 ) r ( 1 1 0 ) a ( 2 0 0 ) a ( 1 0 5 ) a ( 2 0 4 ) (b) fig. 4 (a) shows the xrd results of tio2-nw, tat@30nm, tat@60nm, and tat@90nm samples deposited at room temperature and (b) shows the xrd peak results for asdeposited tio2-nw and annealed tio2-nw 166 b. shougaijam, s. s. singh the annealing of tio2-nw improves the crystalline structure of tio2, as shown in fig. 4(b). oblique deposition of titanium oxide layers for dsscs is done by using reactive e-beam deposition, which has the same weak peak. further, as-deposited tio2 film was annealed for 3 h at 500 ˚c to produce crystalline tio2 [28]. 3.3. uv-vis spectroscopy and photoluminescence spectroscopy the optical properties of tio2-nw and tat specimens fabricated on an fto substrate were analyzed in the wavelength range of 340 nm to 800 nm using a uv-vis spectrophotometer. the recorded absorption intensity of the sample is shown in fig. 5 (a). the absorption spectrum of tio2-nw shows a higher absorption peak in the ultraviolet range. this peak may be attributed to electron excitation from the outermost valence band (vb) to the conduction band (cb) of the tio2 [29]. moreover, the absorption spectrum of the tio2nw is significantly enhanced in the visible region after the incorporation of different np sizes, i.e., 30 nm, 60 nm and 90 nm. this significant improvement at around 400 to 600 nm in the absorption spectrum may be due to the spr effect of ag-np [30]. moreover, the 400 500 600 700 800 a b so rp ti o n ( a .u ) wavelength (nm) as-deposited tio 2 -nw as-deposited tat@30nm as-deposited tat@60nm as-deposited tat@90nm (a) 2.8 3.0 3.2 3.4 3.6 ~ 3.38 ev (a h n )2 energy (hu) (ev) tio2-nw tat@30nm ~ 3.27 ev (b) 400 450 500 550 600 650 700 in te n si ty ( a .u ) wavelength (nm) tat@30nm (as-deposited) tat@30nm (annealed) ~ 397 nm ~ 397 nm (c) 400 450 500 550 600 650 in te n si ty ( a .u ) wavelength (nm) tat@30nm (annealed) fit peak 1 fit peak 2 fit peak 3 cumulative fit peak ~ 397 nm ~ 386 nm ~ 448 nm ~ 519 nm 1 ~ 387 nm 2 3 (d) fig. 5 (a) the optical absorption spectra of as-deposited tio2-nw, tat@30nm, tat@60nm and tat@90nm specimens fabricated on the fto substrate, (b) the band gap of as-deposited tio2-nw and tat@30nm, (c) pl spectra of asdeposited and annealed tat@30nm samples and (d) shows the gaussian fitted pl graph of annealed tat@30nm sample investigation of dye-sensitized solar cell performance based on vertically aligned tio2 nanowire photoanode 167 calculated band gaps form the tauc plot of tio2-nw and tat@30nm are ~3.38 and ~ 3.27 ev, respectively. further, room temperature photoluminescence (pl) analysis of the ag-np assisted tio2-nw sample was done at an excitation wavelength of 340 nm by using a 370 nm stopband filter. the broad pl intensity of the as-deposited and annealed tat@30nm samples is plotted in fig. 5 (b). a broad emission peak at ~ 397 nm was observed from as-deposited and annealed tat@30nm samples. it was also observed that the pl intensity of the annealed tat@30nm specimen increased compared to the as-deposited sample, which may be due to the increase in the crystallinity of tio2 by reducing the oxygen vacancies. further, the gaussian fitted curve shows the peaks at ~ 385 nm, ~448 nm, and 519 nm, which correspond to the band-to-band transition of tio2 and oxygen defects present between the band gap, as shown in fig. 5(d). 3.4. device characterization the electrical performance of the fabricated dsscs is characterized at room temperature by using a source meter (keithley 2450) connected to the computer and the photocurrent measurement was taken under light illumination at 100 mw/cm2 powered by a solar simulator (ss150, scientech, canada). fig. 6 shows the dye absorbed photoanode, counter electrode and dssc device. the schematic of the dssc device based on the tat photoanode is shown in fig. 6(d). fig. 7 shows the j-v graph of dsscs based on tio2-nw and tat@30nm photoanodes. and, table i shows the cell performance of dsscs devices and the corresponding photovoltaic parameters. (a) (c) (b) dsscs device a fto fto e e e e e ag-np electrolyte n719 tio2 -nw pt (d) fig. 6 (a) fabricated counter electrode, (b) dye absorbed photoanode and (c) fabricated dssc device based on tio2-nw photoanode and (d) schematic of dssc device based on tat photoanode the pce of the tio2-nw is ~ 0.61% and the corresponding open-circuit voltage (voc) and short circuit current density (jsc) of the cell are ~ 0.51 v and ~ 3.21 ma/cm2. the efficiency of the dsscs is reduced to ~ 0.24 percent after the incorporation of ag nanoparticles, with the corresponding voc and jsc being ~0.34 v and ~ 2.11 ma/cm2, respectively. so, there is a difference between the jsc that depends on the light conversion activity and the structure of the photoanode, which determines the electron diffusion pce 168 b. shougaijam, s. s. singh of the solar cell. it is observed that tio2-nw photoanode based dssc devices show better efficiency compared to tat@30nm photoanode based devices. -0.4 -0.2 0.0 0.2 0.4 -2 0 2 4 c u rr en t d en si ty ( m a /c m 2 ) voltage (v) tio 2 -nw tat@30nm (a) 0.0 0.1 0.2 0.3 0.4 0.5 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 c u rr en t d en si ty ( m a /c m 2 ) voltage (v) tio 2 -nw tat@30nm (b) fig. 7 a) j-v graphs of dsscs based on tio2-nw and tat@30nm photoanode, b) magnified j-v graphs of dsscs table 1 photovoltaic performance of tio2-nw and tat@30nm photoanode based dsscs photoanode voc (v) jsc (ma)/cm2 vm (v) im (ma) ff ƞ % reference mwcnt 0.28 1.76 --0.30 0.15 [31] zno film 0.49 2.15 --0.54 0.56 [32] tio2 film 0.56 1.17 --0.85 0.56 [33] tio2-nw 0.51 3.21 0.32 1.94 0.37 0.61 our result tat@ag 30 nm 0.34 2.11 0.21 1.13 0.34 0.24 our result however, the tio2-nw based device improves the accessibility of the entire surface to the dye and corresponding electrolyte medium, leading to a direct and shorter path for the transportation of the electrons. marquesa et al. reported an efficiency of ~ 1.2% from the dssc fabricated using the tape casting method. it was also observed that the highest efficiency was achieved by using 4-tert-butyl pyridine electrolytes [34]. again, erande et al. reported a pce of 0.2% in which the tio2 film was deposited using a chemical method [35].the natural dye, acting as a sensitizer of dsscs, was less efficient. even so, the efficiency of our dssc device based on tio2-nw was higher than that of dsscs using natural dye. furthermore, our device shows better performance in terms of efficiency compared to some of the recently reported devices, as shown in table i. however, the efficiency of our device is still low, which may be due to the small thickness of the photoanode. so, the efficiency may be further improved by increasing the tio2-nw photoanode thickness and also by reducing the size of the metal nanoparticles. 4. conclusion in conclusion, the glad method was used to develop tio2-nw and ag-np-assisted tio2-nw photoanodes on an fto substrate for the development of dsscs. the sem and tem analysis reveal the successful deposition of tio2-nw and tat nanowires. the xrd investigation reveals the presence of ag-np and tio2 crystals in the samples. the investigation of dye-sensitized solar cell performance based on vertically aligned tio2 nanowire photoanode 169 absorption enhancement from the ag-np assisted tio2-nw samples observed in the absorption spectrum may be due to the spr effect of ag-np present in the tio2-nw. the tio2-nw based dssc device shows better efficiency compared to the ag-np assisted tio2-nw photoanode based dssc device. it may be concluded that the size of the ag-np incorporation at the mid-point of the tio2 nw needs to be reduced to enhance the efficiency of dssc. therefore, this presented technique may be employed for developing dsscs and other optoelectronic device applications. acknowledgement: the authors acknowledge the department of science and technology (dst), science and engineering research board (serb), govt. of india for funding this work under file no. ecr/2018/000834. also, the authors would like to thank nit, durgapur and nit nagaland for fe-sem and xrd analysis, respectively. references [1] b. shougaijam and s. s. singh, growth of vertically aligned tio2 nanowire photoanode for developing dye-sensitized solar cell. in: t. r. lenka, d. misra, a. biswas, micro and nanoelectronics devices, circuits and systems. lecture notes in electrical engineering, springer, singapore, 2023, vol. 904, pp. 119-129. [2] l. a. reichertz, i. gherasoiu, k. m. yu, v. m. kao, w. walukiewicz and j. w. ager iii, "demonstration of a iii-nitride/silicon tandem solar cell", appl. phys. express, vol. 2, no. 12, p. 122202, dec. 2009. [3] w. chen, y. wu, y. yue, j. liu, w. zhang, x. yang, h. chen, e. bi, i. ashraful, m. gratzel and l. han, "efficient and stable large-area perovskite solar cells with inorganic charge extraction layers", science, vol. 350, no. 6263, pp. 944-948, oct. 2015. [4] s. i. cha, y. kim, k. h. hwang, y. j. shin, s. h. seo and d. y. lee, "dye-sensitized solar cells on glass paper: tco-free highly bendable dye-sensitized solar cells inspired by the traditional korean door structure", energy environ. sci, vol. 5, pp. 6071-6075, jan. 2012. [5] l. l. estrella, s. h. lee and d. h. kim, "new semi-rigid triphenylamine donor moiety for d-π-a sensitizer: theoretical and experimental investigations for dsscs", dyes and pigments, vol. 165, pp. 1-10, june 2019. [6] l. l. estrella and d. h. kim, "theoretical design and characterization of nir porphyrin-based sensitizers for applications in dye-sensitized solar cells", sol. energy, vol. 188, pp. 1031-1040, aug 2019. [7] q. miao, m. wu, w. guo and ma. tingli, "studies of high-efficient and low-cost dye-sensitized solar cells", front. optoelectron. china, vol. 4, pp. 103-107, april 2011. [8] n. heo, y. jun and j. park, "dye molecules in electrolytes: new approach for suppression of dyedesorption in dye-sensitized solar cells", sci rep., vol. 3, pp. 1712, april 2013. [9] p. baviskar, a. ennaoui and b. sankapal, "influence of processing parameters on chemically grown zno films with low-cost eosin-y dye towards efficient dye sensitized solar cell", sol. energy, vol. 105, pp. 445-454, july 2014. [10] c. hora, f. santos, m. g. f. sales, d. ivanou and a. mendes, "dye-sensitized solar cells for efficient solar and artificial light conversion", acs sustainable chem. eng., vol. 7, pp. 13464-13470, 2019. [11] s. s. d. mir, l. e. liezel, m. a. a. ivy, l. anton, m. nikita, a. mikaee, n. massoma, w. mohebullah, z. hameedullah and s. tomonobu, "photocatalytic applications of metal oxides for sustainable environmental remediation", metals, vol. 11, pp. 1-25, jan. 2021. [12] r. k. pandey and v. k. prajapati, "molecular and immunological toxic effects of nanoparticles", int j biol macromol, vol. 107, pp. 1278-1293, feb. 2017. [13] r. allen, "the cytotoxic and genotoxic potential of titanium dioxide (tio2) nanoparticles on human shsy5y neuronal cells in vitro", the plymouth student scientist, vol. 9, pp. 5-28, 2016. [14] b. shougaijam, r. swain, c. ngangbam and t. r. lenka, "analysis of morphological, structural and electrical properties of annealed tio2 nanowires deposited by glad technique", j. semicond., vol. 38, no. 5, p. 053001, may 2017. [15] r. s. dubey, k. v. krishnamurthy and s. singh, "experimental studies of tio2 nanoparticles synthesized by sol-gel and solvothermal routes for dsscs application", results in physics, vol. 14, p. 102390, sept. 2019. 170 b. shougaijam, s. s. singh [16] h. lee, m. y. song, j. s. jurng and y. k. park, "the synthesis and coating process of tio2 nanoparticles using cvd process", powder technology, vol. 214, pp. 64-68. nov. 2011. [17] h. k. e. latha and h. s. lalithamba, "synthesis and characterization of titanium dioxide thin film for sensor applications", mater. res. express, vol. 5, p. 035059, march 2018. [18] h. y. yang, m. f lee, c. h. huang, y. s. lo, y. j. chen and m. s. wong, "glancing angle deposited titania films for dye-sensitized solar cells", thin solid films, vol. 518, pp. 1590-1594, dec. 2009. [19] m. s. wong, m. f. lee, c. l. chen and c. h. huang, "vapor deposited sculptured nano-porous titania films by glancing angle deposition for efficiency enhancement in dye-sensitized solar cells", thin solid films, vol. 519, pp. 1717-1722, dec. 2010. [20] j. m. ji, h. zhou, y. k. eom, c. h. kim and h. k. kim, "14.2% efficiency dye-sensitized solar cells by co-sensitizing novel thieno [3, 2-b] indole-based organic dyes with a promising porphyrin sensitizer", adv. energy mater., vol. 10, no. 15, p. 2000124, feb. 2020. [21] b. shougaijam and s. s. singh, "structural and optical analysis of ag nanoparticle-assisted and vertically aligned tio2 nanowires for potential dsscs application", j mater sci: mater electron, vol. 32, pp. 19052-19061, june 2021. [22] c. liu, t. li, y. zhang, t. kong, t. zhuang, y. cui, m. fang, w. zhu, z. wu and c. li, "silver nanoparticle modified tio2 nanotubes with enhanced the efficiency of dye-sensitized solar cells", micropor. mesopor. mat., vol. 287, pp. 228-233, oct. 2019. [23] b. pandit, v. s. devika and b. r. sankapal, "electroless-deposited ag nanoparticles for highly stable energy-efficient electrochemical supercapacitor", j. alloys compd., vol. 726, pp. 1295-1303, dec. 2017. [24] k. v. alex, p. t. pavai, r. rugmini, m. s. prasad, k. kamakshi and k. c. sekhar, "green synthesized ag nanoparticles for bio-sensing and photocatalytic applications", acs omega, vol. 5, no. 22, pp. 13123-13129, may 2020. [25] n. s. rohizat, a. h. a. ripain, c. s. lim, c. l. tan, r. zakaria, "plasmon-enhanced reduced graphene oxide photodetector with monometallic of au and ag nanoparticles at vis–nir region", sci. rep., vol. 11, p. 19688, oct. 2021. [26] p. wen, y. han, w. zhao, "influence of tio2 nanocrystals fabricating dye-sensitized solar cell on the absorption spectra of n719 sensitizer", nanotechnol. solar energy, p. 906198, july 2012. [27] a. barranco, a. borras, a. r. gonzález-elipe and a. palmero, "perspectives on oblique angle deposition of thin films: from fundamentals to devices", prog. mater. sci., vol. 76, pp. 59-153, march 2016. [28] s. r. bhattacharyya, z. mallick and r. n. gayen, "vertically aligned al-doped zno nanowire arrays as efficient photoanode for dye-sensitized solar cells", journal of elec mater., vol. 49, pp. 3860-3868, april 2020. [29] y. wang, j. cheng, m. shahid, m. zhang and w. pan, "a high performance tio2 nanowire uv detector assembled by electrospinning", rsc adv., vol. 7, p. 26220, may 2017. [30] m. a. k. l. dissanayake, j. m. k. w. kumari, g. k. r. senadeera and c. a. thotawatthage, "efficiency enhancement in plasmonic dye-sensitized solar cells with tio2 photoanodes incorporating gold and silver nanoparticles", j. appl. electrochem., vol. 46, pp. 47-58, sept. 2016. [31] p. a. mithari, a. c. mendhe, s. s. karade, b. r. sankapal and s. r. patrikar, "mos2 nanoflakes anchored mwcnts: counter electrode in dye-sensitized solar cell", inorganic chem. commun., vol. 132, p. 108827, july 2021. [32] a. n. ossai, s. c. ezike, p. timtere and a. d. ahmed, "enhanced photovoltaic performance of dyesensitized solar cells-based carica papaya leaf and black cherry fruit co-sensitizers", chem. phys. impact, vol. 2, p. 100024, april 2021. [33] n. purushothamreddy, r. k. dileep, g. veerappan, m. kovendhan and d. p. joseph, "prickly pear fruit extract as photosensitizer for dye-sensitized solar cell", spectrochimica acta part a: molecular and biomolecular spectroscopy, vol. 228, p. 117686, oct. 2019. [34] k. b. erande, p. y. hawaldar, s. r. suryawanshi, b. m. babar, a. a. mohite, h. d. shelke, s. v. nipane and u. t. pawar, "extraction of natural dye (specifically anthocyanin) from pomegranate fruit source and their subsequent use in dssc", mater. today: proc., vol. 43, no. 4, pp. 2716-2720, july 2021. [35] a. s. marques, v. a. s. silva, e. s. ribeiro and l. f. b. malta, "dye-sensitized solar cells: components screening for glass substrate, counter-electrode, photoanode and electrolyte", mat. res., vol. 23, no. 5, p. e20200168, nov. 2020. facta universitatis series: electronics and energetics vol. 35, no 2, june 2022, pp. 217-228 https://doi.org/10.2298/fuee2202217k © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper implementation of voice call transfer service between smart phone and tablet through wi-fi durga sowjanya kolluru1, bhaskara reddy puchakayala2 1department of electronics and communication engineering, mlr institute of technology, hyderabad, india 2holy mary institute of technology and science, hyderabad, india, abstract. communication through voice call leads to significant growth in technology in distant areas where two or more people from opposite ends of world will connect. this research describes a case study of voice call transfer service. this research aims at designing a system that will allow android users to communicate over wi-fi. this design is able to transfer voice of incoming telephone caller over wi-fi network at real time through udp. it uses client/server architecture: server for receiving telephone call and transferring voice (one user) and client for receiving incoming caller voice and enables communication with server. architecture designed could be used on android smart phones with telephony enabled and tablets with telephony not enabled. outcome of this research will allow users to communicate on real time at no cost. proposed design gives cost effective, reliable and real time voice communication over wi-fi. it provides good and comfort experience to users in emergency situation where user cannot effort cost for telephone call. proposed design is useful for educational organizations, construction buildings, shopping malls and hospitals which point to new possibilities for voice communication. key words: voice call, voice call transfer service, real time, client/server architecture, incoming caller, telephony. 1. introduction usage of wi-fi enabled mobile phones to access internet is increasing day-by-day.it would be very extraordinary experience to provide communication in secure manner with off-shelf device without using internet [1]. proposed research implements design without having any infrastructure, direct communication between devices in which one device was telephony enabled and other device was telephony not enabled.it offers low cost and fast installation for direct wireless voice communication. received july 20, 2021; received in revised form november 4, 2021 corresponding author: durga sowjanya kolluru department of electronics and communication engineering, mlr institute of technology, hyderabad, india e-mail: k.durgasowjanya@gmail.com 218 d. s. kolluru, b. r. puchakayala ina business organization or university campus, employees need to communicate with each other very frequently which consumes large amount of budget or cost to pay internet bill or telephony bill.so it is big issue which needs to reduce cost of phone call or internet data flow usage.in a fire accident when a large building was fired, without network, way in which stranded people can communicate with people outside has emergent issue.not only for fire accident, all stranded people caused by disaster, i.e. fire, earthquake, tsunami, volcanoes and debris flow need to communicate with outside in emergent way while regular communication facilities are destroyed such as phone facilities or internet facilities. handling these emergent circumstances are very critical [2]. concept of voice communication over wi-fi is processed by wireless communication through 2.4 ghz free channel [3]. wireless communication infrastructure represents core for information sharing between connected devices [4]. router can be used to enable wifi on devices to enable communication within network range. proposed research uses wlan for implementing required design.wireless lan technology has ability to change network infrastructure of an organization without expensive re-routing of cable or installation of new cable [5]. voice over internet protocol (voip) is wireless communication protocol processes packet based ip communication to carry digitized voice [6]. hence ip addresses are very important because socket programming of udp processed for voice communication through ip addresses and ports. so that internet based server is not necessary in proposed research [7]. 1.1. client-server model if there are several computers and resources which are available to other resources to establish connection between them, it is called as network. in network some devices are receiving information from others and some are sending information to others.devices which receives information is called “client” and devices which sends information is called “server”. proposed research implemented client-server model [8] for voice transferring between telephony caller and wi-fi user. it can be implemented by smart phone as server and android tablet as client. proposed research implements real time voice call transfer service between smart phone and tablet through wi-fi with no cost from telephone and internet service providers. figure 1 shows basic idea of proposed research implementation. as depicted in figure, telephony subscriber needs to establish connection with another subscriber (smart phone user) through telephone network. connection establishment is shown by text-field displaying caller’s identity; input recipient number and call recipient is notified about an incoming call. after receiving call, wireless connection is established and call receiving subscriber registered to wi-fi network and updated with other registered users in network range. then telephony not enabled user (tablet user) get connected with smart phone user through their ip addresses. then captured voice of incoming caller from smart phone is transferred to tablet at real time and voice of tablet user is sent to smart phone [9]. hence real time communication between incoming caller and tablet user. implementation of voice call transfer service between smart phone and tablet through wi-fi 219 fig. 1 idea of proposed application 1.2. voice codec figure 2 describes process of voice codec for wireless lan. as depicted in figure; first speech signal has to be digitized at sender before transmitted over packet switched networks. reverse process has been performed at receiver. digitalization process consists of sampling, quantization and encoding. different types of encoding techniques in wireless networks are g.711, g.729 and g.723.1. then encoded speech is packetized into packets of equal size. each packet consists of headers and payload for certain duration depends on codec deployed in application [10]. fig. 2 process of voice codec for wireless lan 1.2.1. g.711 codec in wireless networks, g.711 encodes telephone audio signal of 64 kbps with sample rate 8 khz and 8 bits per sample. in ip network, voice is converted into packets with durations of 5, 10 or 20 ms of sampled voice, and these samples are encapsulated in packet. 1.2.2. g.723.1 codec g.723.1 codec belongs to algebraic code excited linear prediction (acelp) family and has two bit rates associated with it: 5.3 kbps and 6.3 kbps. encoder consists of voice activity detection and comfort noise generation (vad/cng) and decoder is capable of accepting silence frames. encoder operates on speech frames of 30 ms corresponding to 240 samples at sampling rate of 8000 samples/s and total algorithmic delay is 37.5ms. it offers good speech quality in network impairments such as frame loss and bit errors. it is suitable for voip applications. 220 d. s. kolluru, b. r. puchakayala 1.2.3. g.729 codec g.729 codec belongs to code excited linear prediction coding (celp) family and uses conjugate structure-algebraic code excited linear prediction (cs-acelp) model. this was specially designed for wireless applications at fixed 8 kbit/s output rate but it does not include channel coding. it works on frame of 80 speech samples (10ms) and acquires lookahead delay of 5ms. total algorithmic delay is 15ms. figure 3 shows architecture of voice call transfer service through wi-fi. proposed architecture was divided into two phases:in first phase, incoming call is detecting and receiving, registration of users. out of registered users, one is acting as server and other is acting as client. connection between registered users was achieved by connecting them to same wi-fi router. each user is added to wi-fi network through specific ports assigned by programmer. therefore, there is no need of using any server. both devices will be connected with their ip addresses and users are added or removed through packets originated from udp port. in second phase, voice of incoming caller is captured and transferred through wifi from smart phone to tablet. udp based socket programming will be used to implement this. fig. 3 architecture of proposed application figure 4 shows real time audio encoding and audio decoding. it implements cost less voice communication. real time communication is established between them through specific ports assigned by programmer. steps in audio encoding are record voice, encode, storing in buffer, packet framing and transfer through port. steps in audio decoding are receiving through port, storing in buffer, reframe packet, decoding and playing voice. implementation of voice call transfer service between smart phone and tablet through wi-fi 221 fig. 4 process of real time audio encoding and audio decoding 2. research background latest smart phones feature with wi-fi enabling facility. number of smart phone users for wi-fi service has been increasing more and more every year [11]. usage of wi-fi eliminates cost consumed by service providers for short-distance calls. wi-fi calls combine voice and data into single signal by digitizing raw voice signals. converting this combined signal into ip packet and sent through wi-fi which replaces existing telephony network [12]. this entire process is facilitated by voip. in current days, voice telephony over mobile trends as growing technology because of cost consuming telephony service.wi-fi allows data and voice transmission within its coverage area.voice over internet protocol (voip) provides communication between wifi connecting users through internet. voip is a process of exchanging voice between caller and callee through wi-fi/internet. transforming voice in the way telecommunication evolves makes it more advantageous. increasing demand of service with its broadband infrastructure causes voip to develop economical ip phone liked equipment [13]. ip phone was used as interface between telephony network and ip network. but only drawback is ip phones are fixed type. voice communications through voip are more delay sensitive than error sensitive [14]. to resolve this issue, a real time voice protocol udp is developed [15]. udp is a non-reliable wireless communication protocol suited best for real time voice processing. in transport layer, it worked as signaling protocol for ip based applications. it provides peer to peer packet based communication. it converts voice data into packets and communicated to router through wi-fi channel and send to device within the wi-fi range. udp reforms communication from circuit based switched network to ip packet based switched network. udp has network applications in domain naming system (dns), simple network management protocol (snmp), dynamic host configuration protocol (dhcp) and routing information protocol (rip) [16]. due to high speed and less impact on lost packet, udp is suitable for real time voice streaming applications. existing research possess real time audio, audio streaming applications from one peer to another [17]. udp 222 d. s. kolluru, b. r. puchakayala is used in tunnels which create virtual link for direct connection between two locations that are distant in physical network topology. voice processing of real time communication is done by encryption at sender and decryption at receiver through digital signals [18]. previous research explains voice codecs for voice processing. international telecommunications union (itu) implementes voice codec g.711 and g.7xx for audio compression and de-compression. each codec has different packet size and hence performs differently. research in[19] describes features of voice codec g.711. it posses high bit rate (64kbps) as per itu standard which is preferable for digital telephony and ip networks. its quality of voice is high with low processor time. but it has drawback of higher bandwidth utilization. some of the researches suggests graphical user interface (gui) mode for voice processing applications. in [20], authors explained dual channel wireless model. it provides high reliability with low delay. by using this model, same packet was broadcasted by multiple transmitters. hence packet-loss was decreased compared with single channel transmitter [21]. till date, existing technologies supports chatting, video chatting and calling from one device to another over internet. communication protocol like voip work with help of ip based protocols which makes effective communication with less jitter. such system makes wifi subscriber can call each other with no cost over internet. proposed paper implements an application by using free source facility and standard for providing free voice call transfer without internet over wi-fi within lan network from smart phone to tablet. it not only saves money on calling but also provides an effective way for communication to utilize resources in an effective manner. proposed paper uses wlan communication medium to provide cost less voice call transfer facility within wi-fi covered area [22]. 3. methodology wi-fi router is acting like switch to detect devices active in wi-fi lan range. proposed application presents detail implementation of voice call transfer service through wi-fi using socket programming. in this work, android platform has been chosen for developing and implementing mobile application with java in android as programming language. it uses required android apis to implement proposed application.android mobile application named “dst_mlrit_voice_call” has been developed for proposed research. different modules are created, developed and running for smart phone and tablet. app contains three sections: java code, xml code, android manifest. these three sections inter connected each other to user requirements in android gui [23]. software package using android studio will be developed for receiving call, automatically acquiring ip address of tablet user and transferring voice from smart phone to tablet [24]. java is used as backbone of programming because it is platform independent. java incorporates number of features from object-oriented language. java include extensive libraries for multimedia, networking, multi reading, graphic, database access.it has unique attributes that are embedded into its design features makes software developers to design most web applications. embedded design features include oop, platform independence, high performance, multithreading and dynamic linking made programming complex applications rather simple and straightforward [25-26]. application started with program file mainactivity.java. it describes main functions of app. java programming of app start with method on create(). it setup all variables and implementation of voice call transfer service between smart phone and tablet through wi-fi 223 elements initially for application. it provides buttons declaration and onclick methods of buttons. in gui, main user interface layout file activity_main.xml provides start-up screen. then, mainactivity. java will call contact manager.java for connection handling process. in this way, all programming files link elements of front end with back end [27-28]. proposed research designs client server based model to implement voice call transfer service. proposed implementation designed as mobile application in android studio. figure 5 shows flow chart for voice call transfer service programmatically. telephony api in android makes app continuosly in listening state for incoming phone calls. whenever incoming call was detected, smart phone register itself with name in wi-fi network and sends request to other users connected to same network. datagram socket api makes easy for user registartion with add name and remove name parts using udp packets. fig. 5 design flow of implementation of voice call transfer service name entered by user identified with its device ip address through wi-fi manager api. router forwards this request in form of packets through udp based socket programming. update button on screen updates all registered within network. udp socket continuously updates add and remove requests within wi-fi network. when telephony caller (smart phone user) wants to transfer callee voice to another user (tablet user) in same wi-fi network, application continues to runs bychoosing user from drop down list on smart phone. both smart phone and tablet are android devices. proposed application first detects incoming call. incoming voice is received by smart phone with support of android telephony api. voice from microphone of smart phone is taken for processing to 224 d. s. kolluru, b. r. puchakayala destination. sampling rate is kept at 8 kbps. 16 bit pcm is used for sample voice. buffer is used to store the sample voice from pcm. voice codec api compress and encode voice data to transmit over low bit rate ieee 802.15.4 standard. voice encoder converts voice signal into frames and decoder converts frames into voice signal. single frame contains raw voice data of 20 ms voice signal. processed frames are given to encoder, which compresses and returns 38 bytes of encoded voice frames. udp converts these frames into packets. udp socket based communication is to be used for smart phone to communicate with tablet through wi-fi. smart phone will detect destination device. destination device is identified with its ip address through auto discovery method. figure 6 shown process of voice transferring between two users. audio manager api uses read method to send encoded data over wi-fi. real time communication is made by thread running for pre defined time interval reads raw voice from microphone. socket programming provides packet based communication between devices through wi-fi. udp datagram protocol provides packet based communication for tablet and smart phone. as and when android devices starts transferring voice call, voice codec compresses and encodesuser voice into frames and stored into buffer. data in buffer is converted into packets by udp and sent over wi-fi to another user [25]. fig. 6 design flow of voice transferring between two users at receiving end, tablet received voice call through wi-fi notified as incoming call received from smart phone. received voice packets are converted into frames and stored in receive buffer. decoder in codec decodes frames in buffer into voice. decoded voice is played on tablet gui at real time. in the same manner, voice from tablet transferred to smart phone at real time. 4. research results proposed research is designed as mobile application named “dst_mlrit_voice_ call”. it was installed on samsung galaxy smart phone and lenovo android tablet which are connected to same wi-fi. designed application installed successfully on both devices. voice of incoming caller is transferred between smart phone and tablet successfully via wi-fi without consuming any cost from telephone and internet service providers. it is verified on samsung galaxy phone and samsung tablet. experiment have been conducted using android studio tools like import and run on samsung galaxy smart phone as implementation of voice call transfer service between smart phone and tablet through wi-fi 225 server and samsung tablet as client and is quite easy and quick set up. figure 7 (a) shows deployment of mobile app in smart phone. app launching page is shown in figure 7 (b), incoming phone call received on smart phone shown in figure 7 (c). (a) (b) (c) fig. 7 pages of mobile application on smart phone (a) application icon (b) application launching window (c) receiving incoming call application has process permissions for wifi connectivity, phone and audio. as conversation started, screen appears is shown in figure 8 (a). after starting conversation from caller, with wifi permission,users need to be registered. user registration screen with registered user name “sai” is shown in figure 8 (b). after user submit name, app automatically get ip address of registered user. update button will update all registered users. after updating, registered users list will be displayed. screen showing all registered users is shown in figure 8 (c). after user registration, received incoming call will be transferred to registered user. for transferring call, socket based programming is used. when transferring call, packets are sent and received through udp. transferring voicefrom smart phone through wi-fi is shown in figure 8 (d). (a) (b) (c) (d) fig. 8 pages of mobile application on smart phone (a) start of outgoing call (b) user registration page (c) updating users page (d) transferring incoming caller voice page. 226 d. s. kolluru, b. r. puchakayala when voice call is transferring from smart phone to tablet,tablet user needs to be registered on same network in application. user registration screen on tablet is shown in figure 9 (a). for proposed application, user with name “aneesh” is registered. after submitting name, user can click on submit name. update button in screen updates all registered users. list of registered users shown below update button. screen shot of update of users list is shown in figure 9 (b). (a) (b) fig. 9 pages of mobile application on tablet (a) launching application and user registration (b) updating users after user registration, user gets incoming voice call from smart phone user which is voice transferring from smart phone. voice call transferring from smart phone to tablet is shown in figure 10 (a). accept button is used to accept call screen is shown in figure 10 (b). after completing their conversation, end call button is used to end call. (a) (b) fig. 10 pages of mobile application on tablet (a) receiving incoming caller voice from smart phone(b) after accepting conversation 5. conclusion main motive behind proposed research is to enable cost less and server less real time voice call transfer service from smart phone to tablet without using internet. it was implemented as mobile application in client-server model. using androidapk, proposed implementation was installed in devices as app. android apis are used for software model of this design. wi-fi service and udp are used to provide real time voice communication between incoming caller and tablet through smart phone. major challenges at sending side of proposed research are capturing received voice from microphone, stored it in buffer and transfer voice to destination device at real-time. implementation of voice call transfer service between smart phone and tablet through wi-fi 227 at receiving side, tablet programmed to receive and send voice through udp ports. as udp does not reserve extra bandwidth, it would not slow down network. therefore, it resembles quality of system that can be designed for voice communication over wi-fi. nowadays, trend moves towards telecommunication with virtual office/class rooms that create legitimate business deals for voice communication. proposed research design, implements and test on devices and achieves cost effective, server less and reliable voice communication over wi-fi. advantages of proposed model are server less, internet less and cost less real time communication service without changing infrastructure of organization and without using expensive re-routing of cable or installation of new cables. it is implemented designed and tested for one to one device. in future, it creates opportunity to other developers and researchers to extend this service from one device to more devices. acknowledgment: i would like to thank department of science and technology (dst),india under wos-a scheme for financial support. i would like to express my very great appreciation to p. bhaskara reddy,my project mentor for their guidance, enthusiastic encouragement and useful critiques of this research work. references [1] p. shrikondawar, h. bharmal and a. kommera, "chat and file transfer android application using wifidirect", int. j. mod. trends eng. res. (ijmter), vol. 5, no. 5, pp. 1–6, may 2018. [2] i. adabara, e. edozie, g. otiang okoth, o. stephen and k. susan, "implementation and analysis of a free wireless intercom system", int. j. academic inf. syst. res., vol. 3, no. 7, pp. 23–28, july 2019. [3] d. sowjanya kolluru and p. bhaskara reddy, "review on communication technologies in telecommunications from conventional telephones to smart phones", in proceedings of international conference on advances in signal processing, vlsi, communications and embedded systems (icsvce2021), hyderabad, india, april 2021, p. 2407. [4] k. durga sowjanya, ch. srinu , "instant message transfer between two smart phones using wi-fi", int. j. adv. eng. manag. sci. (ijaems),vol. 2, no. 12, pp. 1949–1951, dec. 2016. [5] d. sowjanya kolluru and p. bhaskara reddy, "development of voice call transfer service between android smart phone and tablet", revista geintec – gestao, inovacao e tecnologias, vol. 11, no. 2, june 2021. [6] s.v.s. prasad, t.s. savithri and i.v.m. krishna, "a new technique for color based image segmentation using support vector machines", in proceedings of the international conference on medical imaging, m-health and emerging communication systems (medcom), ieee, greater noida, india, 2014, pp. 189–192. [7] c. brouzioutis, v. vitsas and p. chatzimisios, "studying the impact of data traffic on voice capacity in ieee 802.11 wlans", in proceedings of the ieee international conference on communications (icc), 2010, pp.1–6. [8] m.a.r. siddique and j. kamruzzaman, "increasing voice capacity over ieee 802.11 wlan using virtual access points", in proceedings of the ieee conference on global telecommunications, 2010, pp. 1–6. [9] a. malhotra, v. sharma, p. gandhi and p. purohit, "udp based chat application", in proceedings of the 2nd international conference on computer engineering and technology (iccet), 2010, pp. v6-374–v6-377. [10] a. ratnaningsih, a. ida wuryandari and y. priyana, "the analyze of android’s microphone audio streaming beatme", in proceedings of the international conference on system engineering and technology, september 11-12, bandung, indonesia, 2012, pp.1–6. [11] a. mohd and o. lee loon, "performance of voice over ip (voip) over a wireless lan (wlan) for different audio/voice codecs", jurnal teknologi, vol. 47, pp. 39–60, dec. 2007. [12] s.v.s. prasad, t. satya savithri and i. v. murali krishna, "performance evaluation of svm kernels on multispectral liss iii data for object classification", int. j. smart sensing intell. syst., vol. 10, no. 4, pp. 829–844, jan. 2017. [13] s. venkatraman, s. natarajan and t.v. padmavathi, "voice calls over wi-fi", in proceedings of the world congress on engineering and computer science, 2009, san francisco, usa, pp. 1–5. 228 d. s. kolluru, b. r. puchakayala [14] s. a. ahson, and m. ilyas, voip handbook applications, technologies, reliability, and security, boca raton, fl, crc press, new york. 2009. [15] "voice over internet protocol (voip)", available at: www.android.org. [16] d. sowjanya kolluru, p. bhaskara reddy, "ip to ip calling through socket programming", in proceedings of the ieee sponsored asian conference on innovation in technology (asiancon), pune, maharashtra, india, 2021, pp. 1–7. [17] javvin technologies, network protocols handbook (2nd ed)", saratoga ca 95070 usa, 2005. [18] l. roychoudhuri, e. al-shaer, h. hamed and g.b. brewster. "audio transmission over the internet: experiments and observations", in proceedings of the ieee international conference on communications, 2003, vol.1, pp. 552–556. [19] k. durga sowjanya and v. gayathri devi, "voice call between android devices using wireless sensors", int. j. adv. res. eng. technol., vol. 4, no. 4, april 2016. [20] s.v.s. prasad, "double block zero padding acquisition algorithm for gps software receiver", j. autom. mobile robot. intell. syst., vol. 12, no. 4, pp. 58–63, dec. 2018. [21] a. ramo and h. toukomaa, "voice quality evaluation of recent open source codecs", in proceedings of the 11th annual conference of the international speech communication association, interspeech 2010, makuhari, chiba, japan, pp. 2390–2393. [22] s. woo cho, "p2p-based mobile social networks", in proceedings of the 10th international conference on p2p, parallel, grid, cloud and internet computing, 2015, pp. 141–145. [23] a. biradar, r. c. thool and r. velur, "voice transmission over lan using bluetooth", in proceedings of the ieee region 10 conference tencon, 2009, pp. 1–6. [24] p. aishwarya, v. dinesh, c. ramya, m. ramya and s. sathish kumar, "design and implementation of wi-fi based intercom system using arm 11", in proceedings of the 6th national conference on frontiers in communication and signal processing systems (ncfcsps '18), int. j. innov. res. sci. eng. technol., vol. 7, no. 1, march 2018. [25] j. ahmad shaheen et al, "android os with its architecture and android application with dalvik virtual machine review", int. j. multimedia ubiquitous eng., vol. 12, no. 7, pp. 19–30, july 2017. [26] m. sabri altemem, "voice chat application using socket programming", eur. acad. res., vol. 2, no. 5, aug. 2014. [27] d. sowjanya kolluru and p. bhaskara reddy, "analysis of parameters for measuring performance of mobile applications", int. j. anal. appl., vol. 19, no. 4, pp. 587–603, 2021. [28] s. n. khan and i. firdous, "review on android app security", int. j. adv. res. comput. sci. software eng., vol. 7, no. 4, april 2017. [29] i. nachev and s. maleshkov, "android-based control interface solution for windows applications", in proceedings of the 1st virtual international conference on advanced research in scientific areas 2012, december 2012, pp. 2073–2077. [30] s. k. sohail, s. f. aalam and m. r. m. balal, y. kamble and d. m. rauf, "intercom system for short path communication", int. j. res. eng. appl. manag., vol. 3, no. 08, pp. 1–2, nov. 2017. [31] r. c. vaidya and p. s. s. kulkarni, "voice over ip mobile telephony using wifi", int. j. sci. eng. res., vol. 3, pp. 1–5, dec. 2012. http://www.android.org/ instruction facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications  tomislav suligoj 1 , marko koričić 1 , josip žilak 1 , hidenori mochizuki 2 , so-ichi morita 2 , katsumi shinomura 2 , hisaya imai 2 1 university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2 asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 15, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) 508 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai be to use a coarser-lithography bicmos technology [1, 2], instead of an advancedlithography pure cmos technology [3]. moreover, the bipolar part should be integrated with cmos with a minimum addition to process complexity, which could make the highperformance si/sige bicmos technologies [4] prohibitively expensive. on the other hand, horizontal current bipolar transistor (hcbt) [5, 6] is a very compact structure, outperforming all the existing lateral bipolar transistors (lbts) [7, 8]. hcbt is fabricated in a simple technology without the need for the steps that are standard in the vertical-current bipolar structures, i.e. without n + buried layer, epitaxial growth, base polysilicon layer, emitter-base spacers, collector plug implantation, deep trench isolation etc., which makes it attractive for the very low-cost, high-performance bicmos technology. hcbt is invented at the faculty of electrical engineering and computing, university of zagreb, croatia, [9, 10] and its characteristics has been improved over 3 generations of transistors. at first, the technology concept has been demonstrated by using coarse contact lithography having transistors of with cutoff frequency (ft) of 4.4 ghz and collector-emitter breakdown voltage (bvceo) of 15.8 v [11]. in the second generation of hcbt, the 0.5 μm stepper lithography has been used reaching ft=30.4 ghz and bvceo=4.2 v which became the fastest lateral bipolar transistor [12, 13]. finally, hcbt has been integrated with cmos and further optimized having ft=51 ghz and bvceo=3.4 v [5, 14], which is among the fastest pure-silicon bipolar transistors reported [15]. in this paper, an overview of the most advanced hcbt technology is given, showing all the innovative technology steps and specific device effects that have enabled the recordbreaking electrical characteristics. furthermore, the mixer is demonstrated as an rf circuit fabricated in hcbt technology [16], together with high-voltage hcbt structures [17-19], which broaden the application spectrum of hcbt bicmos technology platform. 2. hcbt fabrication the hcbt structure with a single polysilicon region is fabricated by using a commercial 180 nm cmos process, which features dual gate oxide thicknesses of 3 nm and 7 nm for 1.8 v and 3.3 v supply voltages, respectively. both nmos and pmos transistors are made with 2 versions of threshold voltages (vth), optimized for high-speed and low stand-by power consumption at 1.8 v supply voltage. the cmos process features 6 aluminum layers and poly-poly and metal-metal capacitor modules. the hcbt fabrication sequence is depicted in fig.1. the active transistor region is processed in the silicon sidewall defined by the shallow trench isolation (sti), which is 350 nm deep with the sidewall at approximately 80° angle relative to the surface. the active sidewalls of hcbt are aligned to (100) crystal direction. after the implantation of the cmos nand p-wells, the 1 st hcbt mask is used for the implantation of the n-hill collector region as shown in fig. 1.a. the n-hill is implanted by phosphorus and consists of 3 steps with the energies of 340 kev, 220 kev and 110 kev. alternatively, the cmos n-well can be used for the collector n-region and the 1 st hcbt mask is not needed, resulting in the even lower-cost process. the cmos gate polysilicon layer is left at the emitter side of the n-hill at the distance of 500 nm (fig. 1.b), in order to obtain the desirable final shape of the emitter n + polysilicon region. after the gate polysilicon etching, re-oxidation and source/drain horizontal current bipolar transistor (hcbt) 509 extension implantation for mos transistors, the extrinsic base is implanted by using the 2 nd hcbt mask (or the 1 st , if the n-well collector is used), as shown in fig. 1.b. the edge of the mask across the n-hill determines the extrinsic base width (wbext) and the distance between the extrinsic base and the n + collector region. the extrinsic base is annealed together with the source/drain extensions, which is a cmos baseline process step. the 3 rd hcbt mask (or the 2 nd in the case of the n-well collector) is used for sti oxide etching after the source/drain annealing. the sti oxide is timed etched, as shown in fig. 1.c, defining the trench for the emitter polysilicon region. the thickness of the remaining oxide at the n-hill sidewall is around 100 nm. the 10 nm of teos oxide is deposited next and the 2 nd hcbt mask (or the 1 st in the case of the n-well collector) is used again for the intrinsic base implantation, which is performed at a tilt angle of 30° using bf2, as shown in fig. 1.d. the rta process at 800°c is carried out, followed by the deposition of 450 nm of in situ doped amorphous silicon (α-si) layer as shown in fig. 1.e. the n + α-si layer fills the emitter trench near the active sidewall and under the cmos gate. the α-si is then timed etched by tetramethyl ammonium hydroxide (tmah) and is removed across the wafer except in the emitter trench (fig. 1.f). since the tmah etchant is very selective to the oxide, the n-hill is protected from etching by a thin layer of oxide grown during the predeposition rta step, as shown in fig. 1.e. in this way, the emitter n + region is formed, while the base and the n-hill are protected by the thin oxide layer. the cmos gates are protected from tmah etching by the oxide encapsulation, grown during gate reoxidation process. the cmos gate at the emitter side of the n-hill makes it possible to obtain the shape of emitter n + α-si layer with the minimum thickness very close to the active sidewall, as can be seen in the tem cross-sections in figs. 2.a and 2.b. if the cmos gate is not used (fig. 3), the emitter α-si is the thinnest in the middle of the trench, which limits its thickness at the active sidewall. fig. 3.a depicts the marginal case of hcbt without cmos gate, where the emitter contact barely sits on polysilicon, but its thickness at the active sidewall is 125 nm. by using the cmos gate, the emitter polysilicon thickness at the active sidewall is 85 nm (fig. 2.b) and it increases toward the contact. additionally, the use of cmos gate requires a deposition of thinner polysilicon layer to fill the emitter trench, which improves the controllability of the final polysilicon thickness. b ecphotoresist photoresist n-hill sio2 p+ photoresist n-hill sio2 p+ int. base i/i p n-hill sio2 p+ p s/d i/i n+ photoresist n-hill sio2 p+ ext. base i/i n-hill sio2 p+ p (a) (b) ( )d ( )g ( )h photoresist n-hill sti teos sio2 (c) (e) (f) n-hill sio2 p+ p n+ photoresist silicide blocking sio2 n-hill sio2 p+n+ cmos gate wbext spacers cosi2 500 nm n+ si - protection oxide p-substrate p-substrate p-substrate p-substrate p-substrate p-substrate p-substrate p-substrate n+ polyn+ poly pn+ si - fig. 1 fabrication sequence of hcbt with a single polysilicon region. 510 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai the cmos spacers are formed at the n-hill sidewalls above the n + α-si layer and serve to isolate the emitter and base silicides from each other, as shown in fig. 1.f. next, the source/drain implantation mask of the nmos transistor is also opened above the n-hill and the collector n + region is obtained (fig. 1.f). the source/drain junction depth is around 200 nm, reaching deeper than the extrinsic base junction. the emitter drive-in diffusion is performed during source/drain annealing and α-si layer crystallizes forming the emitter n + polysilicon region. the silicide-blocking oxide layer has to be left between the extrinsic base and the implanted n + collector in order to prevent the collector base shorts, also used in standard cmos contact processing (fig. 1.g). the final hcbt structure with a single polysilicon layer is shown in fig. 1.h. fig. 2 tem cross-section of the processed hcbt structures with a single polysilicon region: (a) the whole transistor structure with cmos gate, (b) close-up of the active sidewall. the emitter contact is out of the image plane and is hand-sketched. fig. 3 tem cross-section of the processed hcbt structures without cmos gate: (a) excessive n + amorphous silicon etching and removed n + polysilicon under the emitter contact, (b) exact n + amorphous silicon etching, but too thick n + polysilicon (154 nm) at the n-hill sidewall. horizontal current bipolar transistor (hcbt) 511 3. hcbt electrical characteristics the electrical characteristics of the hcbt with the optimized collector fabricated by a separate implantation are compared with the lower-cost hcbt with cmos n-well region used as collector. the collector profile of the optimized hcbt is designed to obtain a uniform electric field in the collector-base depletion region resulting in an optimum tradeoff between the ft and fmax and collector-emitter breakdown voltage (bvceo). this effect is specific to hcbt structure and can be used as an additional technological step to optimize transistor characteristics, which will be analyzed further in section 4. the gummel plots and output characteristics of the optimized and n-well hcbts are shown in fig. 4 and the electrical parameters are summarized in table 1. both transistors are optimized for maximum ft and fmax and have a modest current gain (β) of around 70. the n-well hcbt has a higher extrinsic base doping level reducing the electron component of the base current. the n-well hcbt has bvceo = 2.8 v, whereas the optimized hcbt has bvceo = 3.4 v, which makes it more suitable for the use in the circuit applications with voltage supply of 3.3 v. 0.4 0.6 0.8 1.0 1.2 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 collector type: optimized n-well v ce =1 v i b i c c o ll e c to r, b a s e c u rr e n t (a ) base-emitter voltage (v) 0 1 2 3 4 0 100 200 300 400 500 collector type: optimized n-well i b =0...3 a i b =0.5 a c o ll e c to r c u rr e n t ( a ) collector-emitter voltage (v) (a) (b) fig. 4 measured dc characteristics of hcbt with a single polysilicon region with emitter area 0.1×1.8 μm 2 with the optimized collector and n-well collector: a) gummel plots, i.e. ib and ic vs vbe, and b) output characteristics, i.e. ic vs vce. table 1 electrical parameters of hcbt with the optimized collector and n-well collector optimized n-well emitter area 0.1 x 1.8 μm 2 peak β 72 76 bvcbo (v) 9.5 8.3 bvceo (v) 3.4 2.8 va (v), vbe=0.85 v 16 15 va (v), ib=5 μa 10 11 cbc (ff) @ vcb= 1 v 1.1 1.6 rb (ω), circle imp. 480 430 ft (ghz) @ vce= 2v 51 43 fmax (ghz) @ vce= 2v 61 56 ftbvceo(ghzv) 173 120 512 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai the high-frequency characteristics of the optimized and n-well hcbts are shown in fig. 5. the optimized hcbt has ft and fmax of 51 ghz and 61 ghz, respectively, and ftbvceo product equals 173 ghzv, which is among the highest reported for the implanted-base si bjts and very close to the theoretical johnson’s limit [20]. the n-well hcbt has ft and fmax of 43 ghz and 56 ghz, respectively. the ft and fmax of n-well hcbt fall off at higher currents due to the increased collector concentration. however, the peak values are lower for n-well hcbt due to the increased neutral base width and due to the effect of charge sharing between the extrinsic and intrinsic base regions, which will be explained in more details in section 4. peak ft and fmax of n-well hcbt are still high enough for wireless applications and it can be used as a low-cost technology. both hcbts have a small collector-base capacitance (cbc) per emitter length of less than 0.8 ff/μm, which makes them attractive for low-power circuit applications. the early voltages (va) of the optimized hcbt are equal to 16 v and 10 v for constant vbe and for constant ib, respectively, and 15 v and 11 v for n-well hcbt. since both transistors are optimized for maximum speed, va for constant ib are relatively low, but it can be improved by reducing collector doping level and traded for ft in such a case. 4. collector doping profile effect on electrical characteristics in standard vertical-current bipolar transistors, the intrinsic and extrinsic base regions are formed at the wafer surface next to each other, resulting in classical planar collectorbase pn-junction. on the other hand, in hcbt structure, the extrinsic base p + -region and the intrinsic base p-region form the angle of approximately 100°, because the extrinsic base is implanted at the wafer surface, whereas the intrinsic base is implanted at the n-hill sidewall. hence, the ionized donor charge on the n-collector side of the collector-base pnjunction is shared between the intrinsic and the extrinsic base acceptors, since the collector is surrounded by the extrinsic and intrinsic base regions. therefore, the depletion region has to extend to the collector side and to shrink at the base side to reach the charge balance [21], as shown in fig. 6, reducing the electric field as a result. as a 10 -5 10 -4 10 -3 0 10 20 30 40 50 60 70 optimized collector f t f max n-well collector f t f max f re q u e n c y ( g h z ) collector current (a) fig. 5 cutoff frequency (ft), and maximum frequency of oscillations (fmax) vs. collector current (ic), of hcbt with emitter area 0.1×1.8 μm 2 with the optimized collector and the n-well collector, at vce=2 v. horizontal current bipolar transistor (hcbt) 513 consequence, the intrinsic base is locally wider at the top of emitter reducing the ic, β and ft. hence, the collector doping must be increased just under the extrinsic base to suppress the charge sharing effect, i.e. to reduce the neutral base widening and the extension of the depletion region. in order to examine the effect of collector design and to optimize the hcbt characteristics, two structures with different collector doping profiles, as shown in fig. 7, are compared [22]. hcbt with collector 1 has a steeper doping profile than hcbt with collector 2, i.e. a higher doping concentration at the top of the intrinsic base, just under the extrinsic base, where the charge sharing effect is mostly pronounced. a distribution of impact ionization rates are simulated and shown in fig. 8. non-local impact ionization based on lucky electron model with hard threshold energy is used. the peak impact ionization rates are 1.4·10 24 cm -3 s -1 and 7.9·10 24 cm -3 s -1 for collector 1 (steep n-hill) and collector 2 (uniform n-hill), respectively. the hcbt with collector 2 (uniform n-hill) has a higher impact ionization rate and it occurs at the bottom of the base, because the current density is the highest in this region due to the narrowest neutral base there. moreover, the electric field is reduced at the top of the base due to the charge sharing effect reducing the impact ionization rate there. additionally, the rounded shape of the collector-base fig. 6 simulations of hcbt cross-section showing the potential distribution in the collector-base depletion region. 0 100 200 300 400 500 600 10 17 10 18 extrinsic base emitter depth collector 2: uniform n-hill collector 1: steep n-hill d o p in g ( c m -3 ) depth (nm) photoresist p-substrate sio2 ( )a cmos poly p+ n-hill p-chan. stop int. base i/i photoresist p sio2 ( )b p+ sic sic + int. base i/i pn-hill p p a a’ cmos poly fig. 7 measured sims (lines) and simulated (symbols) doping profiles of collector region along the cross-section aa’, after all of the cmos annealing steps. 514 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai depletion region at the bottom of the base causes the reverse charge sharing effect increasing the local electric field there. the hcbt with collector 1 (steep n-hill) has a smaller impact ionization rate since the doping profile reduces charge sharing effect, and also decreases electric field at the bottom of the base. therefore, impact ionization rate does not have a peak as sharp as in uniform collector, but is more uniformly distributed along the intrinsic transistor. the output characteristics depicted in fig. 9.a show a lower bvceo for hcbt with collector 2 (uniform n-hill) corresponding to the higher peak impact ionization shown in fig. 8., and a higher bvceo for hcbt with steep collector profile due to the more uniform electric field and current flow distributions in the collector-base depletion region, and reduced impact ionization rate. as shown in fig. 9.b, ft and fmax are basically equal for two collector doping profiles. therefore, due to the higher bvceo and equal ft the hcbt with collector 1 (steep n-hill) has a higher ftbvceo product and represents an optimum hcbt design. the measured characteristics of hcbt with two different collectors are summarized in table 2. both transistors are designed to have a higher β comparing to the transistors described in section 3 [5], by reducing the doping levels in the intrinsic base impactionization log | x| (cm-3s-1) 23 23.2 23.52 23.84 24.16 24.48 24.8 25.1 emitter n+ poly n-hill n+ depletion region edge pn-junction impact ionization basecollector sio2 p+ uniform int. base sio2 p narrower depletion region emitter n+ poly n-hill n+ depletion region edge pn-junction impact ionization basecollector sio2 impactionization log | x| (cm-3s-1) 23 23.2 23.52 23.84 24.16 24.48 24.8 25.1 p+ wider int. base on top sio2 p wider depletion region (a) (b) fig. 8 cross-sections of the simulated impact ionization rate distribution of hcbt structures with: (a) collector 1 (steep n-hill), (b) collector 2 (uniform n-hill), at vbe=0.7 v and vce=2 v. 0 1 2 3 4 0 50 100 150 200 250 300 collector type: n-hill: steep n-hill: unif. i b =0..1 a i b =0.2 a c o ll e c to r c u rr e n t ( a ) collector-emitter voltage (v) 10 -1 10 0 5 10 15 20 25 30 35 40 45 50 55 60 f t f max v ce =2 v collector type: n-hill: steep n-hill: unif. f re q u e n c y ( g h z ) collector current (ma) (a) (b) fig. 9 measured (a) output and (b) high-frequency characteristics of hcbt with a single polysilicon region with emitter area 0.1×1.8 μm 2 with collector 1 (steep n-hill), with collector 2 (uniform n-hill). horizontal current bipolar transistor (hcbt) 515 and collector and consequently resulting in a lower ft. the hcbt with collector 1 (steep n-hill) has a higher collector resistance (rc) due to the lower average collector doping level, but it still has a rather small effect on ft and fmax as compared to the neutral base and collector-base depletion region time constants. table 2 measured electrical parameters of hcbt with collector 1 (steep n-hill), collector 2 (uniform n-hill). collector 1 collector 2 emitter area 0.1 x 1.8 μm 2 peak β 118 126 ft (ghz) 34 35 fmax (ghz) 57 56 bvceo (v) 3.6 3.1 ftbvceo(ghzv) 122 109 cbc(ff) vcb=1v 1.8 1.8 rc (ω), sat. 590 320 5. hcbt circuit design beside the characterization of transistor-level electrical characteristics, the hcbts’ performance is examined by using them in circuits. for this purpose, a down-converting mixer is designed and measured as the first rf circuit fabricated in hcbt technology [13]. mixers are rf building blocks widely used in heterodyne transceivers [23]. since most communication protocols involve an increasing number of users, the frequency spectrum is shared by multiple channels. in order to minimize the intermodulation distortion, the linearity is a critical parameter of wireless transceivers. moreover, the linearity of radio receivers (also including bandpass filters and low-noise amplifier) are typically limited by the im distortion of the first downconverting mixer [24]. hence, mixer linearity must be as high as possible at a given power consumption, since many of applications include portable battery-supplied devices. double-balanced active mixer based on a gilbert cell shown in fig. 10.a is designed in three different hcbt technologies by using different collector doping profiles: hcbt 1 (steep n-hill), hcbt 2 (uniform n-hill) and hcbt 3 (cmos n-well). gilbert cell mixer consists of differential input amplifier (q1, q2) cascoded by a commutating circuit (quad) made by 4 transistors (q3 – q6). since the im distortion in such mixer is mainly caused by the input differential pair, degeneration resistances (re) are used to improve the linearity. the local oscillator (lo) buffer is used to convert the single-ended input to the differential signal for gilbert cell and to provide the voltage swing high enough to switch the quad transistors on and off. all subcircuits (gilbert cell, lo buffer, current source) are made with the same hcbts in 3 different technology versions with different collector doping profiles. power supply voltage is 5 v. all passive components are kept constant in all versions of circuits, such that the difference in the circuit performance can be attributed to the difference of the used transistors. 516 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai rc rc q1 q2 q3 q4 q5 q6 i0 rere vlo vcc lo buffer q7 q8 vcc vrf _ vrf+ vif _ vif+ (a) (b) fig. 10 double-balanced active mixer based on a gilbert cell designed and fabricated in hcbt technology: (a) mixer schematic, (b) chip layout and test setup. mixers are measured on-wafer by using multi-contact probes with the setup shown in fig. 10.b. the rf and lo ports are driven by a single-ended rf signal generator without any matching networks. the input impedances are designed to be 50 ω, but the exact values are measured separately by using vector network analyzer (vna) and the input losses due to the impedance mismatch are taken into account. however, they are below 1 db due to the small reflexion coefficient at both inputs. the output power is measured by spectrum analyzer connected asymmetrically to one output (collectors of q3 and q5), whereas the other output port is terminated by 50 ω. the output impedance is also measured by vna and the impedance mismatch loss together with the loss due to the single ended output is added to the measured output power. the 3rd order input intercept point (iip3) and conversion gain of mixers with 3 different hcbts are measured at 1 ghz rf frequency and -10 dbm input power. the lo buffer is driven by rf generator with 0 dbm output power. the output frequency is 10 mhz and the two-tone spacing used in iip3 measurement is 10 khz. the measured iip3 and conversion gain dependence on the mixer current (imix) (without the lo buffer current) are shown in fig. 11. the maximum iip3 of 17.7 dbm is achieved by mixer with hcbt 2 at imix= 9.2 ma, which is a small current for a given iip3 as compared to the available mixers, e.g. [25]. the peak iip3 of hcbt 1 and hcbt 3 are 10.9 dbm, and 14.7 dbm at currents 6.7 ma and 9.5 ma, respectively. if the power consumption of the mixer is critical, the iip3 above 10 dbm can be obtained at current consumption between 5 ma and 6 ma by all three mixer designs, resulting in the power consumption between 25 and 30 mw. the conversion gains are rather constant with current (above 4 ma) with the maximum values of -4.2 db, -5 db and -5.5 db for hcbt 1, hcbt 2, and hcbt 3, respectively. the maximum conversion gains are obtained at approximately the same current as the maximum iip3. such conversion gains are expected and are due to the use of emitter degeneracy and are traded for high iip3s. horizontal current bipolar transistor (hcbt) 517 all three mixers have approximately the same linearity at low currents (below 6 ma), whereas the difference appears at higher currents, where the quad transistors (q3 – q6) operate near the high-current drop-off region, i.e. at or above the currents of peak ft. the linearity of transistors in high-current regime is affected by the slope of ft vs ic characteristics at high currents, influenced by the charge sharing effect discussed in section 4. it can be explained by the rate of base charge (qb) increase with ic, which is the smallest for hcbt 2 with uniform n-hill collector profile. more detailed explanation is provided in [16]. high-current linearity can be improved for all collector doping profiles by increasing the size of quad transistors resulting in the operation at the lower current density avoiding the high-current drop-off region. however, the transistor operation below the current densities around peak ft implies the increase of layout area. 6. high-voltage hcbt devices 6.1. double-emitter (de) hcbt the hcbt structures described so far are optimized for high-frequency characteristics targeting rf communication circuit applications. in order to broaden the application spectrum of hcbt bicmos technology, i.e. for automotive, instrumentation and biomedical electronics, transistors with higher breakdown voltages are highly desirable. in standard vertical-current bipolar transistor structures based on the super-self-aligned transistor (sst), different breakdown voltage devices are typically obtained by the different parameters of selectively implanted collector (sic) [26], which usually requires additional lithography masks and increases the fabrication costs. a high-breakdown voltage hcbt can be fabricated by placing two active transistor regions at the silicon sidewalls opposite to each other, such that their collector-base 2 4 6 8 10 12 14 0 5 10 15 20 25 ii p 3 ( d b m ) mixer current (ma) iip3 hcbt 1 hcbt 2 hcbt 3 -25 -20 -15 -10 -5 c o n v e rs io n g a in ( d b ) conv. gain fig. 11 measured 3 rd order input intercept point (iip3) and conversion gain vs. mixer current (imix) of mixers in three different technologies: hcbt 1 (steep n-hill), hcbt 2 (uniform n-hill) and hcbt 3 (cmos n-well). measurement setup: prf= -10 dbm, plo= 0 dbm, frf= 1 ghz, fif= 10 mhz, two-tone δf= 10 khz, vcc= 5 v. 518 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai depletion regions merge, resulting in the reduced electric field. such structure has two emitters opposite to each other and two collector contacts in the plane perpendicular to the direction that connects emitters, as shown in fig. 12. the structure is named doubleemitter (de) hcbt [17, 18]. since the two emitters of de hcbt are placed at the opposite sidewalls of the silicon n-hill, extrinsic bases overlap on the top and intrinsic collector between two intrinsic bases is shared, as can be seen in fig. 13. the extrinsic collector is fabricated laterally in front and back of the intrinsic transistor. in such a way, the intrinsic collector is surrounded by p + extrinsic base from the top, two intrinsic bases from left and right and by the p-substrate from the bottom (fig. 12). since collector charge is shared between surrounding acceptors, collector is fully depleted by reverse collector-base voltage, if transistor operates in the forward active region. once collector is fully depleted by collector-base reverse voltage (vcb), the potential is pinned in the middle of the n-hill between two intrinsic bases, as shown in sti sio2 depletion region int. base p-substrate base emitter polyn+ ext. base n+ ext. collector emitter collector emitter collector depleted n-hill electron flow fig. 12 3d schematic of double-emitter (de) hcbt structure formed by merging two hcbts in opposite directions resulting in the reduced electric field. sti cmos gate n-hill p+ cmos gate p-substrate emitter n+ poly emitter n+ poly base emitter 2emitter 1 hillw 5 0 nm0 p fig. 13 tem cross-section along the emitters of the fabricated double-emitter (de) hcbt structure. extrinsic collectors are in the front and the back. horizontal current bipolar transistor (hcbt) 519 fig. 14. further increase in vcb causes the potential drop laterally across the drift regions, which are formed toward the extrinsic collector, whereas the potential drop across the intrinsic base-collector junction remains roughly constant. additional shielding of the intrinsic bases from the collector voltage is obtained by the extension of the extrinsic base on the top of the drift region, which is wider than the intrinsic base (fig. 12), as well as by the substrate, which is connected to the ground potential in order to isolate the device. eventual current leakage into the substrate might occur at very high current densities, but this is beyond the useable bias conditions. double-emitter hcbt is fabricated in the same fabrication flow as standard single polysilicon region hcbt with the steep collector profile [22], described in sections 4 and 5. the only additional process step is eventually the ion implantation of the intrinsic base at the opposite side of the n-hill. no additional lithography masks are needed to integrate de hcbt with standard hcbt bicmos. the measured dc characteristics of de hcbt are presented in fig. 15. the gummel characteristics (fig. 15.a) show satisfactory quality of fabricated junctions. in the output characteristics (fig. 15.b) with different n-hill widths (whill) it is obvious that de hcbt has a higher bvceo and early voltage (va) comparing to standard single-poly hcbt. the measured electrical parameters of two de hcbts and single-poly hcbt are summarized in table 3. in order to take the full advantage of bvceo improvement and to maximize va for a given collector profile, transistors should be fabricated with a narrow n-hill, i.e. whill should be 0.5 µm or smaller. a hard breakdown cannot be observed in fig. 15.b for vce lower than 10 v for all de hcbt structures. in case of the transistor with whill=0.6 µm, the change in the slope indicates the start of the avalanche process, which is then limited by the base shielding effect at higher vce. the bvceo is measured in forced vbe configuration, where vbe is set to 0.7 v and vcb is swept. bvceo is determined as the vcb where the base current (ib) turns from positive to negative, increased by vbe=0.7 v. for the transistor with whill=0.6 µm substantial avalanche current is generated for vcb > 2.5 v reducing ib and eventually reversing its direction. however, the slope of ib characteristics becomes smaller for vcb > 4 v f(x)(x) x x potential field collector fully depleted collector not fully depleted middle of n-hill middle of n-hill a a’ b b’ fig. 14 (a) schematic cross-section at the middle of the intrinsic transistor parallel with the wafer surface (top view). (b) potential and electric field at the symmetry line along the middle of emitters (aa’ line). in case of fully depleted collector maximum potential and electric field are limited due to limited amount of collector fixed charges. the rest of the voltage is dropped laterally across the drift region. 520 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai indicating that collector is fully depleted and electric field across the intrinsic basecollector junction as well as avalanche multiplication are limited. even though ib turns to negative, hard breakdown does not occur and the output characteristics in fig. 15.b become flat. in case of the transistor with whill=0.5 µm, characteristics in fig. 15.b show similar behavior. however, since whill is decreased, a smaller vcb is needed to fully deplete collector and the base shielding effect is more efficient. therefore, the electric field across the intrinsic base-collector junction is limited to lower value compared to the transistor with whill=0.6 µm. in case of the transistor with whill=0.36 µm, base shielding is the most efficient. the output characteristics in fig. 15.b are flat, indicating that potential drop over the intrinsic base-collector junction does not increase substantially with vcb, meaning that base width modulation is suppressed. indeed, extrapolated early voltage from the output characteristics between vce=5 v and vce=8 v for ib=0.5 µa equals va=301 v. giving the fact that the current gain at vce=5 v is β=95.4 this gives the β·va product as high as 28700 v. table 3 measured electrical parameters of single-poly hcbt and double-emitter (de) hcbts with different width of the n-hill single-poly de, whill=0.5 µm de, whill=0.36 µm emitter area (μm 2 ) 0.1 x 1.8 2 x (0.1 x 1.3) βmax (vce=2 v) 124 104 94 va, (v) 9.5 75 301 bvcbo (v) 8.3 11.2 12.9 bvceo (v) 3.6 11.6 12.6 vcb@bvceo (v) 2.9 10.9 11.9 ft (ghz) 37.6 13.6 12.7 fmax (ghz) 67 29.5 28 ic@ftmax (µa) 220 100 77 ftbvceo(ghzv) 135 158 160 β·va, (v), 1178 (vce=2 v) 7800 (vce=5 v) 28700 (vce=5 v) it can be seen in table 3 that the de hcbt with narrower n-hill has a reduced ft of 13.6 and 12.7 ghz for transistors with whill of 0.5 µm and 0.36 µm, respectively. dominant cause of the lower ft is the increase in the base-collector depletion region transit time, because electrons flow through the depleted n-hill region, which is approximately 1 µm long. moreover, since whill is smaller than the emitter width (we), the current is crowded near the middle of the n-hill increasing the local current density and causing the kirk effect to occur at lower values of ic. therefore, ft peaks at lower ic in de hcbt. for transistors with smaller whill, bvcbo is increased, meaning that electric field is reduced at the peripheral part of the extrinsic base toward the extrinsic collector. interestingly, measured bvceo and bvcbo given in table 3 are almost equal, but vcb at which bvceo occurs (i.e. ib changes the sign) is slightly smaller than bvcbo. horizontal current bipolar transistor (hcbt) 521 6.2. double-emitter (de) reduced-surface-field (resurf) hcbt in de hcbts the breakdown voltage can be increased above 12 v by merging the ncollector regions of two transistors, due to the fact that the n-collectors are at the active region surface in the compact hcbt structure and not at the bottom of the intrinsic device as in the conventional vertical-current transistors. the breakdown voltage can be increased further, up to 36 v, by shielding the electric field in the drift region resulting in the reduced-surface-field (resurf) de hcbt [19]. this is done by using a cmos pwell implant and by the design of lithography masks (i.e. without any additional costs). having a high-speed, as well as 12 v and 36 v high-voltage bipolar transistors along with the cmos increases the flexibility and application spectrum of hcbt bicmos technology further, making it attractive both for rf and other analog applications. since high-voltage bipolar transistors are integrated at zero-cost, the technology is suitable for integration of low-cost smarter systems including higher-power and human-interface sensor circuits, which makes it a contender for the future internet of everything (ioe) applications. cross-sections at the symmetry lines of the de hcbt with resurf region are shown in figs. 16.a and 16.b. in double-emitter configuration, a ceb e c layout is used with extrinsic collectors folded to front and back of the intrinsic transistor. compared to the standard de hcbt, this one has an extended extrinsic collector with cmos p-well implanted underneath to obtain local substrate with increased concentration. the basic idea is that the n-hill above the p-well region is fully depleted if collector voltage is increased and that the second resurf drift region is formed. fig. 16 schematic cross-sections of the fabricated de resurf hcbt structure having ceb e c layout. (a) ebe cross-section along the emitters. (b) cbc cross-section along the middle of the n-hill. due to the symmetry, only one half is shown. compared to standard de hcbt structure, cmos p-well is implanted in the n-hill between the collector contact region and the intrinsic transistor. in the forward active region, portion of the n-hill above the p-well is fully depleted and the 2 nd drift region (dr 2) is formed. 522 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai the change of the electric field with the increase of the collector-emitter voltage (vce) is shown in fig. 17. for small vce, the peak electric field at the intrinsic base-collector junction increases with vce as shown in fig. 17.a and depletion regions spread into the intrinsic collector. after intrinsic collector is fully depleted, there is no available donor charge in this cross-section (fig. 16.a) and the maximum electric field at the junctions remains unchanged. the voltage is dropped in the perpendicular cross-section across the 1 st drift region (dr 1 in fig. 16.b) toward the extrinsic collector. electric field along the current path in the middle of the n-hill is shown in fig. 17.b. as vce is increased, the 2 nd peak of the electric field appears at the end of dr 1, whereas the 1 st peak at the intrinsic base-collector junction remains the same, because collector voltage is blocked by the extrinsic base extensions above dr 1. further increase in vce increases the 2 nd peak up to the voltage where the extrinsic collector above the p-well region becomes fully depleted and the 2 nd drift region (dr 2) is formed. additional increase in vce causes the voltage drop across the dr 2. collector voltage is partially blocked by the p-well region reducing its impact on the value of the electric field 2 nd peak. since there is enough available charge in the extrinsic collector, the 3 rd peak of the electric field appears at the end of the dr 2. the ability of the p-well region to block the collector voltage determines whether the critical field is first reached in the 2 nd or the 3 rd peak of the electric field. this can be controlled by the length of dr 2. de resurf hcbts are fabricated on the same dies as high-speed hcbts and de hcbts with bvceo=12 v. the steep n-collector doping profile described in section 4 is used. measured common emitter output characteristics of fabricated transistors with different lpw are shown in fig. 18.a. breakdown occurs around 26 v for the transistor with lpw=0.5 µm and around 36 v for the transistor with lpw=3 µm. summary of electrical characteristics is given in table 4. fig. 17 electric field with the increasing vce: (a) along the middle of the emitters (ebe cross-section of fig. 16.a), (b) along the current path in the cbc cross-section from fig. 16.b. horizontal current bipolar transistor (hcbt) 523 table 4 measured electrical parameters of double-emitter (de) hcbt with n-hill width of 0.36 μm and different length lpw. lpw=0.5 µm lpw=3 µm emitter area (μm 2 ) 2 x (0.1 x 1) 2 x (0.1 x 1) βmax 123 129 va, (v), (ib=15 na, vce=6~7 v) 1928 2233 bvceo (v), output char. 26 36 (=bvcs) bvcs (v) 33 36 ft (ghz) 5.3 2.7 fmax (ghz) 10.6 4.6 ftbvceo (ghzv) 137 97 β·va, (kv), 237 288 in the case of transistor with lpw=0.5 µm, the classical common-emitter breakdown mechanism occurs, meaning that the critical field appears along the current path and that a positive feedback loop due to transistor current gain is closed. for the transistor with lpw=3 µm, breakdown occurs between the local p-well substrate and the n-hill. this means that neither the 2 nd nor the 3 rd peak from fig. 17.b generate holes, which can close the positive feedback loop. the 2 nd peak is limited below the critical value for avalanche, whereas the holes generated at the 3 rd peak are collected by the substrate instead of the extrinsic base. for the transistor with lpw=3 µm, it is more effective than for the transistor with lpw=0.5 µm, because holes have to travel longer distance to reach the extrinsic base in the presence of strong vertical electric field component in the dr 2. this is confirmed by the measurements of the collector-substrate breakdown voltage (bvcs), which equals the bvceo measured in the output characteristics for the structure with lpw=3 µm. avalanche current generated at breakdown flows between the collector and the substrate, whereas the base and the emitter currents are not changed, which is not the case in the standard bipolar transistors. as a result we have bvceo=bvcbo=bvcs. due to the e-field shielding of the intrinsic base-collector junction, the base-width modulation is suppressed, resulting in very high early voltage, which equals around 1.93 kv and 2.23 kv for the transistors with lpw=0.5 µm and lpw=3 µm, respectively. this reflects to almost 100 db of intrinsic gain (va/vt) at room temperature for both devices. since the value of current gain β is high, considering that the transistor has implanted base, the β·va product is remarkable indicating good analog performance. dependence of the cut-off frequency (ft) and maximum oscillation frequency (fmax) on collector current are shown in fig. 18.b. in this structure, the high-frequency performance is traded for higher bv and ft and fmax are reduced accordingly. nevertheless, ft·bvceo products show results very close to the johnson’s limit [20]. 7. conclusion the hcbt is based on a new concept of bipolar transistor technology resulting in a low-cost fabrication, but with many innovative steps. the optimized-collector hcbt is fabricated with 3 additional masks to cmos process, resulting in an optimum trade-off between the ft, fmax and bvceo. the hcbt with the n-well collector requires 2 additional 524 t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s-i. morita, k shinomura, h. imai masks to cmos process and has lower ft, fmax and bvceo, but still high enough for wireless communications circuits in the frequency range between 0.9 and 5 ghz. the optimizedcollector hcbt targets the applications with supply voltages of 3.3 v, whereas the hcbt with the n-well collector has bvceo below 3 v, which has to be taken into account in circuit design. since ft and fmax peak at low currents, i.e. at 200-300 μa in hcbt with optimized collector, hcbt is very attractive for low-power battery-supplied wireless communications circuit blocks. furthermore, such small currents allow for an increase of emitter length in order to reduce rb for low-noise applications, while maintaining a reasonably low ic. the demonstrated double-balanced active mixers based on a gilbert cell show that the highcurrent linearity of hcbts are affected by n-collector doping profile and are optimized such that transistors can operate in high-current regime saving the layout area. the n-collector doping profile also impacts the degree of the charge sharing between the extrinsic and intrinsic bases, which determines the value and distribution of the electric field defining the transistor breakdown voltage. therefore, the breakdown voltage can be increased without affecting the high-frequency characteristics. by using the charge sharing effect and hcbt geometry where all intrinsic transistor regions (emitter, base and collector) are along the horizontal line of current flow, it is possible to merge 2 devices and fully deplete n-collector. in this way, the electric field can be shielded and the breakdown voltage is engineered. by adding the p-well region underneath n-collector, the electric field shielding effect is extended further and the breakdown voltage can be increased to 36 v. the breakdown voltage can be adjusted just by changing the lithography masks. hence, hcbt makes it possible to have a flexible bicmos technology platform with high-speed devices for rf circuits and high-voltage devices for very diverse system on-a-chip applications. acknowledgement: this work has been supported in part by asahi kasei microdevices co., by the croatian science foundation under the project no. 9006, and by the ministry of science, education and sports of the republic of croatia, under contracts no. 036-0361566-1567 and no. 036-0982904-1642. references [1] w. m. huang, h. s. bennet, j. costa, p. cottrell, a.a. immorlica, jr., j-e mueller, m. racanelli, h. shichijo, c. e. weitzel, and b. zhao, "rf, analog and mixed signal technologies for communication ics – an itrs perspective", in proc. bipolar/bicmos circuits technol. meeting, october 2006, pp. 1–8. [2] h. s. bennet, r. brederlow, j. c. costa, p. e. cottrell, w. m. huang, a. a. immorlica, jr., j-e mueller, m. racanelli, h. shichijo, c. e. weitzel, and b. zhao, "device and technology evolution for si-based rf integrated circuits", ieee trans. electron devices, vol. 52, no. 7, pp. 1235-1258, july 2005. [3] s. lee, b. jagannathan, s. narashima, a. chou, n. zamdmer, j. johnson, r. williams, l. wagner, j. kim, j.-o. plouchart, j. pekarik, s. springer, and g. freeman, "record rf performance of 45-nm soi cmos technology", in iedm tech. dig., 2007, pp. 255-258. [4] a. fox, b. heinemann, r. barth, d. bolze, j. drews, u. haak, d. knoll, b. kuck, r. kurps, s. marschmeyer, h.h. richter, h. rücker, p. schley, d. schmidt, b. tillack, g. weidner, c. wipf, d. wolansky, and y. yamamoto, "sige hbt module with 2.5 ps gate delay", in iedm tech. dig., 2008. [5] t. suligoj, m. koriĉić, h. mochizuki, s. morita, k. shinomura, and h. imai, "horizontal current bipolar transistor (hcbt) with a single polysilicon region for improved high-frequency performance of bicmos ics", ieee electron device lett., vol. 31, no. 6, pp 534-536, june 2010. horizontal current bipolar transistor (hcbt) 525 [6] t. suligoj, m. koriĉić, h. mochizuki, s. morita, k. shinomura, and h. imai, "examination of horizontal current bipolar transistor (hcbt) with double and single polysilicon region", in proc. bipolar/bicmos circuits technol. meeting, september 2012, pp. 5-8. [7] h. nii, t. yamada, k. inoh, t. shino, s. kawanaka, m. yoshimi, and y. katsumata, "a novel lateral bipolar transistor with 67 ghz fmax on thin-film soi for rf analog applications", ieee trans. electron devices, vol. 47, no. 7, pp. 1536-1541, july 2000. [8] i.-s. m. sun, w. t. ng, k. kanekiyo, t. kobayashi, h. mochizuki, m. toita, h. imai, a. ishikawa, s. tamura, k. takasuka, "lateral high-speed bipolar transistors on soi for rf soc applications", ieee trans. electron devices, vol. 52, no. 7, pp. 1376-1383, july 2005. [9] p. biljanović, t. suligoj, "horizontal current bipolar transistor (hcbt): a new concept of silicon bipolar transistor technology", ieee trans. electron devices, vol. 48, pp. 2551-2554, november 2001. [10] t. suligoj, p. biljanović, k.l. wang, "horizontal current bipolar transistor and fabrication method", us patent no.7,038,249, may 2006. [11] t. suligoj, m. koriĉić, p. biljanović, k.l. wang, "fabrication of horizontal current bipolar transistor (hcbt)", ieee trans. electron devices, vol. 50, no. 7, pp. 1645-1651, july 2003. [12] t. suligoj, p. biljanović, j.k.o. sin, and k.l. wang, "a new hcbt with a partially etched collector", ieee electron device lett., vol. 26, no. 3, pp. 200-202, march 2005. [13] t. suligoj, j.k.o. sin, and k.l. wang, "horizontal current bipolar transistor (hcbt) process variations for future rf bicmos applications", ieee trans. electron devices, vol. 52, no. 7, pp. 1392-1398, july 2005. [14] t. suligoj, m. koriĉić, h. mochizuki, s. morita, "hybrid-integrated lateral bipolar transistor and cmos transistor and method for manufacturing the same", u.s. patent 8,569,866, october 2013. [15] j. böck, h. knapp, k. aufinger, t. f. meister, m. wurzer, s. boguth, and l. treitinger, "highperformance implanted base silicon bipolar technology for rf applications", ieee trans. electron devices, vol. 48, no. 11, pp. 2514-2519, november 2001. [16] t. suligoj, m. koriĉić, j. žilak, h. mochizuki, s. morita, k. shinomura, and h. imai, "optimization of horizontal current bipolar transistor (hcbt) technology parameters for linearity in rf mixer", in proc. bipolar/bicmos circuits technol. meeting, october 2013, pp. 13-16. [17] m. koriĉić, t. suligoj, h. mochizuki, s. morita, k. shinomura, and h. imai, "examination of novel high-voltage double-emitter horizontal current bipolar transistor (hcbt)", in proc. bipolar/bicmos circuits technol. meeting, october 2011, pp. 5–8. [18] m. koriĉić, t. suligoj, h. mochizuki, s. morita, k. shinomura, and h. imai, "double-emitter hcbt structure—a high-voltage bipolar transistor for bicmos integration", ieee trans. electron devices, vol. 59 , no. 12, pp. 3647 – 3650, december 2012. [19] m. koriĉić, j. žilak, t. suligoj, "double-emitter reduced-surface-field horizontal current bipolar transistor with 36 v breakdown integrated in bicmos at zero-cost", ieee electron device lett., vol. 36, no. 2, pp. 90 – 92, february 2015. [20] e. o. johnson, "physical limitations on frequency and power parameters of transistors", rca rev., vol. 26, pp. 163-177, 1965. [21] m. koriĉić, t. suligoj, h. mochizuki, s. morita, k. shinomura, and h. imai, "design considerations for integration of horizontal current bipolar transistor (hcbt) with 0.18 μm bulk cmos technology", solid-state electronics, vol. 54, no. 10, pp. 1166-1172, 2010. [22] t. suligoj, m. koriĉić, h. mochizuki, s. morita, k. shinomura, and h. imai, "collector region design and optimization in horizontal current bipolar transistor (hcbt)", in proc. bipolar/bicmos circuits technol. meeting, october 2010, pp. 212-215. [23] j. rogers and c. plett, radio frequency integrated circuit design. artech house inc., boston, 2003. [24] s.-t. lim, and j. r. long, "a low-voltage broadband feedforward-linearized bjt mixer", ieee j. solid state cir., vol. 41, no. 9, pp. 2177-2187, september 2006. [25] high linearity, low power downconverting mixer, linear technology, lt5526 [online]. available: http://www.linear.com/product/lt5526 [26] j. s. dunn, d. c. ahlgren, d. d. coolbaugh, n. b. feilchenfeld, g. freeman, d. r. greenberg, r. a. groves, f. j. guarín, y. hammad, a. j. joseph, l. d. lanzerotti, s. a. st. onge, b. a. orner, j.-s. rieh, k. j. stein, s. h. voldman, p.-c. wang, m. j. zierak, s. subbanna, d. l. harame, d. a. herman, jr., and b. s. meyerson, "foundation of rf cmos and sige bicmos technologies", ibm j. res. develop., vol. 47, no. 2/3, pp. 101–138, march 2003. instruction facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 489 507 doi: 10.2298/fuee1604489b coreless open-loop current transducers based on hall effect sensor csa-1v  marjan blagojević 1 , uglješa jovanović 2 , igor jovanović 2 , dragan mančić 2 , radivoje s. popović 3 1 irc sentronis ad, niš, serbia 2 university of niš, faculty of electronic engineering, niš, serbia 3 epfl swiss federal institute of technology, lausanne, and senis ag, zug, switzerland abstract. the paper provides an overview of coreless open-loop current transducers based on hall effect sensor csa-1v. depending on the implementation method and current range, the presented transducers are divided in the four groups. the transducers are capable to measure ac and dc currents ranging from several tens of miliamperes up to several hundreds of amperes. methods for resolving issues with the skin effect and stray magnetic fields are also presented including the experimental test results. some of these methods are novelty and have never been presented in literature. key words: current measurement, current transducer, hall effect sensor, csa-1v 1. introduction hall effect refers to the voltage that appears on a conducting material when an electric current flowing through the conductor is influenced by a magnetic field [1], [2]. hall effect is illustrated in fig. 1, where the current i (flowing through the hall sensor in the direction shown in fig. 1) is deflected due to the magnetic flux density b, and thereby generates the voltage vh. fig. 1 operation principle of a hall effect sensor. received october 6, 2015 corresponding author: marjan blagojević irc sentronis ad, niš, serbia (email: marjan@sentronis.rs) 490 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović the equation which describes the output voltage of the hall effect sensor is: bikv hh  (1) whereas kh is coefficient which defines the sensitivity of the sensor. thanks to the advantages they provide, current transducers based on hall effect sensors are used in various applications [2]. hall effect sensors are suitable for current measurement due to their small sizes, low prices, good linearity, galvanic isolation, high bandwidth, good accuracy and the ability to measure dc current rather than only ac current [3], [4]. they can be employed to measure currents ranging from several microamperes up to several thousands of amperes. the distribution of current density in a conductor with a rectangular cross section and equivalent schematic of this conductor are shown in fig. 2, where each color of resistor in the schematic matches the corresponding area of a rectangular conductor. due to the skin effect, the higher the frequency the less current flows through the resistor r4 and more through the resistor r1, i.e. the less current flows through the middle of the conductor and more near the outer edges [5], [6]. current redistribution in a rectangular conductor is important factor in current measurement applications. fig. 2 distribution of current density and equivalent schematic of a flat conductor. the skin effect within massive rectangular conductors may become noticeable at very low frequencies in the order of several tens of hz. the redistribution of current density results in the redistribution of the measured magnetic flux density which deteriorates frequency and phase responses of current transducers. phase response of a current transducer is very important in applications for electric energy measurements (for instance, good current transformers have a phase shift less than 1°). immunity to stray magnetic fields is an important feature of current transducers based on hall effect sensors because they can induce a false reading and measurement errors. this paper provides an overview of current transducers based on a hall effect sensor csa-1v divided in the four groups. the first group works in the similar way as pickup coils and measures current in a pcb traced conductor or in a wire. the second group is based on miniature bus bars and can measure currents up to several tens of amperes. thanks to the magnetic field increase using multi-turn coils, the third group can measure very low currents in the range of miliamperes. the fourth group is based on bus bars and it is designed for high current applications. the major features of the transducers, the issues that arise with current measurement and the methods to overcome them are also presented in this paper. special attention was paid to methods for resolving issues with the skin effect and stray magnetic fields. coreless open-loop current transducers based on hall effect sensor csa-1v 491 some of the presented solutions for frequency response improvement are novelty and, according to the knowledge of this paper authors, have never been presented in the literature. 2. hall device csa-1v csa-1v is an integrated hall effect single-axis magnetic field sensor designed for non-contact measurement of electric current. the device is manufactured using a standard cmos technology with an additional sentron’s patented ferromagnetic layer called integrated magnetic concentrator (imc) [7], [8] and it incorporates the spinning current technique. thanks to that, compared to the conventional hall effect sensors, the csa-1v provides a magnetic gain contributing to a greater magnetic sensitivity, a lower magnetic offset and a lower magnetic noise [9], [10]. the device is packed in a standard soic-8 case (see fig. 3) which provides a good isolation (up to 600 v) for applications with current conductor traced on a printed circuit board (pcb) [9]. fig. 3 direction of the sensitivity vector and location of the sensing element [10]. the sensing element of the csa-1v is located approximately 0.3 mm below the top surface of soic-8 case as illustrated in fig. 3. consequence of uncontrollability of the imc process is that csa-1vs will usually not have the specifications rated in the datasheet [9]. for this reason, during the manufacturing process, the calibration procedure is introduced using the certain number of specifically designated memory cells [11]. the calibration memory cells are manufactured in “zener zapping” technology and can be programed only once [12], [13]. the calibration procedure of csa-1vs is well presented in papers [11], [13]. 3. pickup hall effect current transducers a current transducer operating on the similar principle as a pickup coil can be realized using hall effect sensors. in these transducers, instead of a pickup coil, the csa-1v is employed to sense a magnetic field generated by a current carrying conductor and convert it to a voltage proportional to that field. this can be performed either by employing the csa-1v to measure current in an adjacent wire or in a pcb traced conductor below the csa-1v as shown in fig. 4 [10]. 492 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović fig. 4 shape and direction of magnetic field from two different conductor types [10]. the csa-1v differential output voltage for a current carrying circular conductor (wire) located on top of the sensor can be approximated with the following equation [10]: 3.0 060.0    d i voutdiff (2) whereas d is a distance between the csa-1v top surface and a center of a wire given in milimeters (see fig. 4) and i is current applied in a wire. the application of the csa-1v measuring current in a current carrying wire is shown in fig. 5. if placed too close to the csa-1v, high current carrying wire can saturate the csa-1v. therefore, the limits for electrical and magnetic saturation must be taken into the account. fig. 5 application of the csa-1v measuring current in a current carrying wire. the csa-1v differential output voltage for a flat pcb conductor traced directly below the csa-1v can be approximated with the following equation [10]: ivoutdiff  40 (3) whereas i is current applied in a pcb traced conductor assumed to be roughly 3.2 mm wide. the sizing of the pcb trace needs to take in account the current handling capability and the total power dissipation. for this reason, the pcb trace needs to be thick enough and wide enough to handle designated nominal current continuously. using a single pcb traced conductor, currents up to 10 a can be measured. the applications of the csa-1v measuring current in the pcb traced conductor (see fig. 6) are presented in paper [14] while the thermal analysis performed using the thermal imaging camera is presented in paper [15]. coreless open-loop current transducers based on hall effect sensor csa-1v 493 fig. 6 applications of the csa-1v measuring current in the pcb trace [14], [15]. applications shown in fig. 6 are implemented in photovoltaic power plant for dc current measurement of photovoltaic modules [14]. 3.1. transducer with the magnetic shield the csa-1v can detect any surrounding stray magnetic field which is in the direction of sensitivity (across the chip) which may cause interference and disturb the measurement accuracy. the solution to this issue is to shield the csa-1v by mounting a small (roughly 1 cm 2 x 0.5 mm) ferromagnetic plate on the opposite side of a pcb from the one to which the csa-1v is soldered as shown in fig. 7 [10]. the plate can be made out of mu-metal since it has high permeability at low field strengths and low remanence field. fig. 7 shielding the csa-1v from stray fields [10]. the ferromagnetic shield has double effect: 1. it concentrates the flux around the trace thus shortening the field lines that go through the air almost by double. in this way the magnetic resistance is reduced by double which ultimately contributes to higher induction and greater output signal (by 30%–50%). 2. it serves as the concentrator for stray fields at the same time deflecting them from the csa-1v as shown in fig. 7. 3.2. anti-differential configuration of hall effect sensors measurement error produced by stray fields can be also minimized by implementing two hall effect sensors in the anti-differential configuration shown in fig. 8. 494 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović fig. 8 anti-differential configuration of hall effect sensors [10]. implementation of this method cancels common mode magnetic fields while the output signal is doubled [10] as per following equations: 1 ( )su s b b   (4) 2 ( )su s b b   (5) bsuu  221 (6) whereas b is the measured magnetic field, bs is the common mode magnetic field and s is the sensor sensitivity. this method works perfectly with homogenous stray fields. since the field gradient decreases as a function of distance, if the surrounding nonhomogeneous stray fields are relatively distant from the transducer they can be considered as homogeneous. in this way, the useful signal is doubled while the noise is 2 greater, i.e. the signal to noise ratio is 2 times better. application of anti-differential configuration of the csa-1vs on the massive oval conductor is shown in fig. 9. fig. 9 application of anti-differential configuration on the massive oval conductor. 4. miniature bus bar current transducers currents greater than 10 a can be measured using the csa-1v by conducting current throughout a properly shaped copper miniature bus bar (mbb) placed above the csa-1v as illustrated in fig. 10. fig. 10 copper mbb placed above the csa-1v. coreless open-loop current transducers based on hall effect sensor csa-1v 495 sizing of the mbb and the distance from the csa-1v are dependent on the desired current handling capability. the closer the mbb to the csa-1v, the more accurate readings will be obtained but the limits of electrical and magnetic saturation need to be taken into the account. the approximate csa-1v differential output voltage can be obtained by the following equation: 40 ( 0.3) outdiff i v d    (7) whereas d is the distance between the mbb center and the csa-1v top surface given in millimeters and i is current applied in the mbb. the method illustrated in fig. 10 can easily be implemented by soldering a mbb on to a pcb above the csa-1v as shown in fig. 11 [10]. fig. 11 application of a mbb and a pcb trace [10]. when a noncircular mbbs are employed in the application illustrated in fig. 11, it is necessary to take into the account frequency dependence of transducer’s sensitivity because the skin effect forces high frequency current to flow along the outer edges of the mbb thus changing the magnetic flux density at the site of the csa-1v. consequently, the frequency response deteriorates. the solution to this issue is to split a rectangular mbb into two parallel branches by drilling a hole in the middle of a mbb as illustrated in fig. 12. in this way, since the current flows through the branches the skin effect is minimized. fig. 12 rectangular mbb without and with the hole in the middle. it should be noted that a hollow mbb (see fig. 12) must be thicker than a same mbb without a hole in order to handle the same current intensity. to demonstrate the difference between transducers with a circular mbb, a rectangular mbb and a rectangular hollow mbb properly, it is necessary to analyze their frequency responses. in order to do so, the three transducers are realized using all three types of mbbs. the transducer with the circular mbb is shown in fig. 13. 496 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović pcb csa-1v circular mbb 0.7 fig. 13 transducer with the circular mbb. the transducer with the rectangular mbb, capable of handling currents up to 50 a, is shown in fig. 14. 0.7 pcb csa-1v rectangular mbb fig. 14 transducer with the rectangular mbb. the transducer with the rectangular hollow mbb is shown in fig. 15. the mbb is identical to one employed in the transducer shown in fig. 14 with the only difference being the hole. 0.7 pcb csa-1v hole rectangular hollow mbb fig. 15 transducer with the rectangular hollow mbb. the frequency responses of all three transducers are shown in fig. 16. the sensitivity of the transducer with the circular mbb for dc current is s=34 mv/a, the sensitivity of the transducer with the rectangular mbb for dc current is s=35 mv/a while the sensitivity of the transducer with the rectangular hollow mbb for dc current is s=28.36 mv/a. as can be seen from fig. 16 the frequency response of the transducer with the circular mbb (see fig. 13) has the 3 db sensitivity attenuation (sensitivity is equal to 0.7) at 100 khz which corresponds to the frequency response of the csa-1v sensor itself [9]. for the transducer with the rectangular mbb (see fig. 14), the 3 db sensitivity attenuation is around 80 khz. however, for the transducer with the hollow rectangular mbb (see fig. 15), the 3 db sensitivity attenuation is around 100 khz just like for the transducer with the circular mbb. based on the measurements shown in fig. 16, the benefit of the hollow rectangular mbb is evident. coreless open-loop current transducers based on hall effect sensor csa-1v 497 fig. 16 frequency responses for all three transducers. it is possible for a high frequency ac current carrying mbb to be on much higher potential relative to the ground of the csa-1v. this can lead to the capacitive coupling between the mbb and the csa-1v. to avoid this, it is necessary to place the electrostatic shield between the mbb and the csa-1v. figure 17 shows the electrostatic shield implemented in the transducer with the rectangular hollow mbb. the electrostatic shield is mounted over the top surface of the csa-1v and soldered on the ground pad on the pcb. the electrostatic shield drops sensitivity and to minimize this it is necessary to employ the electrostatic shield with the shape shown in fig. 17. fig. 17 transducer with the rectangular hollow mbb and the electrostatic shield. the frequency response of the transducer with the rectangular hollow mbb and the electrostatic shield is shown in fig. 18. fig. 18 frequency response of the transducer with the rectangular hollow mbb and the electrostatic shield. 498 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović by comparing the frequency responses for the transducer with and without the electrostatic shield (fig. 16 and fig. 18) slight sensitivity decrease is evident. 4.1. mbb transducer with the magnetic shield to protect the csa-1v from stray magnetic fields it is possible to employ the magnetic shield shown in fig. 19. selection of the shield material must be taken into the account in order not to affect transducer frequency response and linearity [16]. compared to the magnetic resistance of air, the magnetic resistance of the ferromagnetic shield is practically equal to zero. this means that the magnetic resistance of the magnetic circuit is reduced by factor of two, i.e. the sensitivity is increased by factor of two. fig. 19 magnetic shield structure and transducer with the magnetic shield. side effect of the magnetic shield is that it may have hysteresis and a remanence magnetization which can cause offset. the solution to this issue is to insert a layer of vitrovac beneath the magnetic shield. vitrovac absorbs the field inflicted by the remanence magnetization. the frequency response of the transducer with the magnetic shield (see fig. 19) is shown in fig. 20. sensitivity for dc current is s=57.8 mv/a. fig. 20 frequency response of the transducer with the magnetic shield. implementation the magnetic shield does not affect the frequency response which can easily be seen by comparing frequency responses shown in fig. 16 and fig. 20. coreless open-loop current transducers based on hall effect sensor csa-1v 499 5. current transducers based on a bobbin coil another method to develop low current transducers based on the csa-1v is by increasing the magnetic field around the csa-1v using a multi-turn coil (see fig. 21). in this way even currents in the order of several tens of miliampers can be accurately measured. during the assembly, the csa-1v is mounted in a center of a bobbin with the sensing element, inside the csa-1v, in the middle of a bobbin at equal distance from top and bottom bobbin edge as shown in fig. 21. fig. 21 multi-turn coil and placment of the csa-1v inside the bobbin. transducer sensitivity is dependent on the coil size and the number of turns. increased sensitivity and immunity to stray fields can be gained by shielding the coil. the bobbin provides very high dielectric isolation making this a suitable solution for high voltage power supplies with relatively low currents. the output should be scaled to obtain the maximum voltage for the highest current to be measured in order to obtain the best accuracy and resolution. based on this method the transducers, capable of measuring currents ranging from 250 ma to 10 a, are produced. structure of these transducers is the same (see fig. 22) with the only difference being the type of implemented coil. depending on the current range there are three types of coil implemented in the transducer: 1. for 250 ma current with 10 v/a sensitivity using 250 turns with awg34 wire; 2. for 2.5 a current with 1 v/a sensitivity using 24 turns with awg24 wire; 3. for 10 a current with 0.25 v/a sensitivity using 6 turns of awg18 wire; fig. 22 transducer structure: 1. shields; 2. duct tape; 3. foil; 4. bobbin; 5. csa-1v. components shown in fig. 22 are fitted in a cubic box and properly sealed. photo of the realized transducer is shown in fig 23. 500 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović fig. 23 photo of the realized transducer. the transducer can be adjusted to output either a bipolar or unipolar voltage. the transfer functions for both output types are shown in fig. 24. fig. 24 transfer function for bipolar and unipolar output. when a transducer is inserted in a primary circuit its resistance plays an important role because it acts an insertion resistance and can create an undesired voltage drop. for this reason, it is important to keep a transducer resistance as low as possible. the resistances of the realized transducers are 6 ω for 0.25a, 0.06 ω for 2.5 a and 0.006 ω for 10 a. 6. bus bar current transducers currents ranging up to few thousands of amperes can be measured in the similar way as presented in previous two methods. in this way, instead of employing a pcb trace or a mbb, the idea is to conduct current trough an electrolytic copper bus bar and to fit the csa-1v in the middle of a bus bar to measure current. rather than employing only one csa-1v effective cancellation of stray fields without magnetic cores or shielding can be achieved by employing two csa-1vs. for this reason, the bus bar transducer is realized using the anti-differential configuration of two csa-1vs shown in figs. 8 and 9. photo of the realized bus bar transducer is shown in fig 25. fig. 25 copper bus bar. coreless open-loop current transducers based on hall effect sensor csa-1v 501 as stated above, the skin effect within massive rectangular conductors such as the bus bar shown in fig. 25 can be manifested at very low frequencies in the order of several tens of hz. the skin effect has a major impact in rectangular bus bars [17, 18] with one of the major issues being a redistribution of the magnetic flux density [19]. for this reason, it is necessary to evaluate transducer under dc and ac current. frequency and phase measurements are conducted using the dc current source with modulation from 1 hz to 250 hz and using the power ac current source. measurement results are shown in fig. 26. the blue curve is obtained using the dc source while the red curve is obtained using the ac source. frequency ranges for both current sources partly overlap. fig. 26 frequency and phase responses of the bus bar transducer. based on these measurements, it is evident that skin effect becomes significant for frequencies higher than 20 hz. therefore, it is unnecessary to use dc current source hence every subsequent measurement is performed using the ac current source. on the phase response graph (see fig. 26), the blue curve is obtained using the dc current source, the red curve is obtained using the ac current source while the green curve represents the phase response of the csa-1v which has a dominant role on high frequencies. the transducer phase response on low frequencies is influenced by the bus bar and surroundings. issue with the frequency dependence of the transducer sensitivity can be resolved by implementing at least one of the following methods or by their combination: 1. unsymmetrical placement of the csa-1vs with regard to the bus bar; 2. application of a magnetic filter; 3. application of an electronic filter. 4. cutting out notches in a bus bar in order to produce a restrictive region. 6.1. unsymmetrical placement of the csa-1vs to evaluate the effect of the csa-1vs position on the bus bar, series of measurements are performed in which the both csa-1vs are placed at the same distance from the middle of the bus bar as illustrated in fig. 27. dbus bar csa-1v csa-1v fig. 27 csa-1v positions on the bus bar. 502 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović since the skin effect forces current to flow along the outer edges of the bus bar, the idea is to find a suitable position, for the csa-1vs to be mounted, at which the field changes originating from current redistribution are the least. the measurement results of this experimentation are shown in fig. 28. fig. 28 frequency and phase responses of the bus bar transducer with unsymmetrical placement of the csa-1vs. based on these measurements, the ideal position to mount the csa-1vs is where the frequency response is the flattest. 6.2. magnetic filter the frequency response can be improved using the passive method based on the assembly of a massive flat conductor above the bus bar and the csa-1v. this conductor will induce eddy currents which will cancel the primary magnetic field. consequently, the magnetic field lines will bypass the conductor. instead, they will concentrate between the bus bar and the conductor mounted above the csa-1v. moreover, the current distribution in the bus bar with the conductor mounted above will not be the same as in the case without the conductor, i.e. the current density in the bus bar will be higher on the side closer to the conductor. to obtain a flat frequency response, the copper magnetic filter is employed in the way shown in fig. 29. fig. 29 application of the magnetic filter on the transducer. coreless open-loop current transducers based on hall effect sensor csa-1v 503 frequency and phase responses of the bus bar transducer with the magnetic filter (see fig. 29) are shown in fig. 30. fig. 30 frequency and phase responses of the bus bar transducer with the magnetic filter. based on the measurements shown in fig. 30, it is evident that the magnetic filter reduces sensitivity drop caused by the skin effect, i.e. it increases sensitivity. as the sensitivity drop caused by the skin effect is roughly 40%, it is obvious that the magnetic filter reduces the initial impact of the skin effect for 10%. magnetic filter also improves the phase response. 6.3. electronic filter fig. 31 shows electrical schematic of the bus bar transducer. summation of outputs from two csa-1vs is performed using a differential amplifier ad623 with unity gain. fig. 31 schematic of the bus bar transducer. the idea how to employ an electronic filter to obtain a flatter transducer frequency response is to connect a resistor and capacitor in series instead of a gain defining resistor rg. the resistor is selected so the amplifiers gain compensates the output signal decrease caused by the skin effect. the capacitor is selected so that its impedance begins to decrease when the skin effect begins to impact, meaning that its impedance is zero when 504 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović practically entire current flows along the bus bar outer edges. on this basis, a 220 kω resistor and a 2.2 nf capacitor are selected. frequency and phase responses of the bus bar transducer with the electronic filter are shown in fig. 32. fig. 32 frequency and phase responses of the bus bar transducer with the electronic filter. based on these measurements it is evident that the electronic filter reduces sensitivity drop at the same time improving the phase response. 6.4. bus bar with the restrictive region by having the notches cut out in a bus bar (see fig. 33) nearly a circular cross section of the restrictive region is obtained. for conductors with a circular cross section, redistribution of a current density does not impact on distribution of a magnetic field around a conductor. in this way the lateral skin effect is minimized. fig. 33 bus bar with the restrictive region [20]. since ac current flows through the restrictive region of the bus bar the magnetic flux density around the restrictive region is greater than around the rest of the bus bar. in addition to this, combination of the anti-differential configuration of hall effect sensors and a notched bus bar provides the better immunity to stray magnetic fields mainly because hall effect sensors are close to each other. however, it should be noted that having the notches cut out may cause an overheating at the restrictive region [20]. 6.5. optimized bus bar current transducer in order to improve the frequency response, i.e. to obtain flat frequency response, the optimized bus bar current transducer comprising top three previously presented methods is realized. the electronic filter is composed of a 330 kω resistor and a 2.2 nf capacitor, coreless open-loop current transducers based on hall effect sensor csa-1v 505 the csa-1vs are mounted 5 mm away from the middle of the bus bar and the magnetic filter is applied. overall the obtained amplitude error is less than 1% as shown on fig. 34. fig. 34 frequency and phase responses of the optimized bus bar transducer. effect of the applied methods can be easily spotted on the frequency response in fig. 34 because they result in 55% better frequency response compared to the transducer without compensation. 6.6. braid bus bar another way to minimize the skin effect is rather than to employ plain bus bar to employ a braid bus bar, such as one shown in fig 35. the application of a braid bus bar, consisted of a thin insulated wires, results in a spatial averaging of a current density so that a distribution of a magnetic field around the conductor is not frequency depended. fig. 35 braid bus bar. the disadvantage of this solution is that it is not easy to achieve a rigid attachment between a flexible braid and a hall effect sensor. movement of a hall effect sensor relative to a braid bus bar results in a sensitivity change. therefore, if necessary, this issue must be properly addressed. 6.7. current transducer with magnetic shielded conductor the skin effect in rectangular bus bars can be minimized or even eliminated with partial shielding of the bus bar. the idea is to fit ferromagnetic plates, shaped like letter “c”, on the side edges of a bus bar as shown in fig. 36. 506 m. blagojević, u. jovanović, i. jovanović, d. manĉić, r. s. popović fig. 36 partial shielding of the bus bar [21]. fig. 36 illustrates current density distribution in a bus bar without (left bus bar) and with partial magnetic shield (right bus bar). this method is presented in patent [21] and discussed in paper [22]. optimization of size and shape of ferromagnetic shields can result in a significantly better transducer frequency response keeping dimensions of bus bar the same. minimization of skin effect reduces heating of a bus bar. magnetic structures presented in [1], [2] also minimize ac resistance, which can be useful for some applications. 7. conclusion this paper reviews several types of coreless open-loop current transducers based on the hall effect sensor csa-1v capable of measuring ac and dc currents ranging from several tens of miliamperes up to several hundreds of amperes. during the development of each transducer special attention was paid on solving problems related to the frequency response. in addition, attention was paid not to disrupt the linearity and to achieve satisfactory immunity to stray magnetic fields. another goal of this paper is to expand the scope of use of the realized transducers by providing a lot of useful guidelines for designers faced with the challenges of current measurement using hall effect sensors. the first experiments were related to the mbb transducers suitable for current measurements up to several tens of amperes. with mbbs the skin effect becomes noticeable at frequencies greater than 10 khz. the issue with the skin effect has been overcome by drilling a hole in the bus bar. the issue with stray magnetic fields has been overcome by implementing a ferromagnetic shield and anti-differential configuration of two csa-1vs. the second experiments were related to the transducers based on massive copper bus bars with cross sections which can handle currents up to several hundred of amperes. these solutions employ different ways of position csa-1vs relative to the bus bar, the application of magnetic filter and application of electronic filter. some of the presented solutions for frequency response improvement are novelty and have never been described in the literature. acknowledgement: the research presented in this paper is financed by the ministry of education, science and technological development of the republic of serbia under the projects tr32057 and tr33035. coreless open-loop current transducers based on hall effect sensor csa-1v 507 references [1] r. s. popović, hall effect devices. institute of physics publishing, bristol and philadelphia, 2004. [2] honeywell inc., "hall effect sensing and application," micro switch sensing and control, 2002. [3] d. r. popović, s. dimitrijević, m. blagojević, p. kejik, e. schurig, r. s. popović, "three-axis teslameter with integrated hall probe free from the planar hall effect," in proc. of the of instrumentation and measurement, technology conference, sorrento, italy, no. 6384, pp. 24-27, 2006. [4] d. r. popović, s. dimitrijević, m. blagojević, p. kejik, e. schurig, r. s.popović, "three-axis teslameter with integrated hall probe," ieee transactions on instrumentation and measurement, vol. 56, issue 4, pp. 1396-1402, 2007. [5] d. m. veliĉković, s. r. aleksić, "a numerical procedure for solving skin effect integral equation in thin strip conductors," facta universiatis, series: electronics and energetics, vol. 14, no. 2, pp. 253-270, 2001. [6] m. greconici, g. madescu, m. mot, "skin effect analysis in a free space conductor," facta universiatis, series: electronics and energetics, vol. 23, no. 2, pp. 207-215, 2010. [7] r. s. popović, z. randjelović, d. manić, "integrated hall-effect magnetic sensors," sensors and actuators a: physical, vol. 91, pp. 46 -50, 2001. [8] r. s. popović, p. m. drljaĉa, p. kejik, "cmos magnetic sensors with integrated ferromagnetic parts," sensors and actuators a: physical, vol. 129, pp. 94-99, 2006. [9] sentron, csa-1v datasheet, 2008. [10] sentron, "current sensing with the csa-1v," application note, 2008. [11] m. blagojević, d. manĉić, "programator strujnih i 2d magnetnih senzora," in proc. of the infotehjahorina 2007, jahorina, bosnia and herzegovina, no. e-vi-10, 2007, in serbian. [12] m. blagojević, s. dimitrijević, "programiranje strujnih senzora csa-1v i statisticka analiza," in proc. of the of xiii conference yu info 2007, kopaonik, serbia, pp. 11-14, 2007, in serbian. [13] m. blagojević, m. radmanović, "ureċaj za kalibraciju strujnih senzora," in proc. of the infotehjahorina 2007, jahorina, bosnia and herzegovina, no. e-vi-11, 2007, in serbian. [14] z. petrušić, i. jovanović, lj. vraĉar, d. manĉić, m. blagojević, "a wirelles solution of measurement-control system for photovoltaic application," in proc. of the unitech’10 international scientific conference, gabrovo, bulgaria, vol. 1, pp. 114-122, 2010. [15] m. blagojević, z. petrušić, d. manĉiĉ, m. radmanović, "termiĉka analiza strujne sonde bazirane na senzoru csa-1v," in proc. of the xiii meċunarodni simpozijum energetska elektronika ee 2005, novi sad, serbia, no. t4-4.8, pp. 1-5, 2005, in serbian. [16] p. ripka, "current sensors using magnetic materials," journal of optoelectronics and advanced materials, vol. 6, no. 2, pp. 587-592, 2004. [17] v. belevitch, "the lateral skin effect in a flat conductor," philips technical rev. 32, pp. 221-231, 1971. [18] j. zhou, a. m. lewis, "thin-skin electromagnetic fields around a rectangular conductor bar," journal of physics d: applied physics, vol. 27, pp. 419–425, 1994. [19] i. popa, a.-i. dolan, "numerical modeling of dc busbar contacts," facta universiatis, series: electronics and energetics, vol. 24, no. 2, pp. 209-219, 2011. [20] m. blagojević, d. manĉić, i. jovanović, z. petrušić, "current ampacity of bus-bar with neck for application in current transducers," in proc. of the unitech’10 international scientific conference, gabrovo, bulgaria, vol. 1, pp. 123-127, 2010. [21] j. s. gallina, m. brand, "magnetic structure for minimizing ac resistance in planar rectangular conductors", patent us6105236a [22] t. mizuno, s. enoki, t. suzuki, t. asahina, m. noda, h. shinagawa, "reduction in eddy current loss in conductor using magnetoplated wire," ieej transactions on fundamentals and materials, vol. 127, no. 10, pp. 611-620, 2007. 11769 facta universitatis series: electronics and energetics vol. 36, no 4, december 2023, pp. 519 532 https://doi.org/10.2298/fuee2304519m © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper sparse echo cancellation using variants of least mean fourth and least mean square algorithms swastika mishra, jibendu sekhar roy school of electronics engineering, kalinga institute of industrial technology (kiit) deemed to be university, odisha, india abstract. echo cancellation is the most essential and indispensable component of telephone networks. the impulse responses of most of the networks are sparse in nature; that is, the impulse response has a small percentage of its components with a significant magnitude (large energy), while the rest are zero or small. in these sparse environments, conventional adaptive algorithms like least mean square (lms) and normalized lms (nlms) show substandard and inferior performances. in this paper, the performances of the normalized least mean square (nlms) algorithm, the normalized least mean fourth (nlmf) and the proportionate normalized least mean fourth (pnlmf) are compared for sparse echo cancellation. the sparseness of both the echo response and the input signal is exploited in this algorithm to achieve improved results at a low computational cost. the pnlmf algorithm showed better results and faster convergence in sparse and non sparse systems, but its results in sparse environments are more impressive. the nlmf algorithm shows good results in sparse environments but not in non-sparse environments. the pnlms algorithm can be considered superior to the nlmf and nlms algorithms with respect to the error profile. a modified algorithm, the sparse controlled modified proportionate normalized lmf (scmpnlmf) algorithm, is proposed, and its performances are compared with the other algorithms. key words: channel sparsity, echo cancellation, sparse echo, sparse adaptive algorithm, nlmf, pnlmf, scmpnlmf 1. introduction a requisite requirement of a telecommunications infrastructure is to effectively and constructively remove hybrid and acoustic echoes to achieve improved and upgraded voice quality standards [1]. adaptive filtering has substantial applications not only in the field of telecommunication but also in a large number of emerging areas like geophysics, biomedical, radar, and sonar engineering [1, 2]. adaptive filtering approaches are very prevalent in the received april 27, 2023; revised june 30, 2023 and july 30, 2023; accepted september 26, 2023 corresponding author: jibendu sekhar roy school of electronics engineering, kalinga institute of industrial technology (kiit) deemed to be university, bhubaneswar-751024, odisha, india e-mail: drjsroy@kiit.ac.in 520 s. mishra, j. s. roy field of digital communications and have numerous utilization, such as noise cancellation, blind and semi-blind equalization, and adaptive beam formation in antenna systems. echo cancellation is an explicit application of noise cancellation in telecommunication systems. to overcome the problems of echoes in wireless communication systems, researchers have come up with many adaptive filtering algorithms. accurate data transmission and superior audio quality are the most essential and requisite requirements for digital voice and video communications, for example, in distance learning education via video-conferencing [3, 4]. various algorithms are examined, and their effectiveness and potency are compared with each other with the aim of cancelling the echo on pragmatic test data. nowadays, mostly in case of hands-free telephony systems where there is a large distance between the loudspeaker and a microphone, adaptive echo cancellers are used. high-speed digital signal processing techniques are used in this approach to replicate and remove the echo and therefore surpass the suppression-based technique [4, 5]. 2. related work deep learning-based channel estimation uses channel sparsity, which is one of the characteristics of wireless channels. in most cases, like in acoustic echo, which is a feedback cancellation system, the impulse responses (irs) are mostly sparse or quasisparse. thus, it is very vital to design adaptive filters that can act effectively on the sparse nature of the system’s ir [5, 6]. sparsity means the number of non-zero elements in the signal, and for broadband transmission, the ir of the channel is mostly sparse [7]. to identify the echo path in the echo cancellation scheme, and to improve the performance of a filter, many adaptive filtering algorithms are developed. in a mobile environment, the degree of sparseness in acoustic ir can differ and fluctuate to a great extent. the convergence of standard or regular approaches is not adequate when the sparseness of the response is very strong [8]. so there is extensive study in sparsity-aware adaptive filtering research for successfully learning compact solutions to linear problems using sparse signal recovery (ssr) techniques [9]. system identification in an adaptive way is a demanding and difficult problem in a sparse impulse response system. when a substantial portion of energy is present in a minute fragment of a signal, then the input signal’s impulse response is sparse in nature. [10, 11]. qualitatively, a system’s degree of sparseness can be calculated, ranging from highly dispersive to highly sparse. adaptive filtering algorithms can also be developed to act on the sparseness in the input of the signal along with the sparseness of echo responses [12, 13]. typically, in a system, the duration of the echo response is in the range of 64–128 ms and is associated with a large delay that is dependent on various factors [14, 15, 16]. as the length of the active region is very short (8–12 ms), the ir mostly consists of idle areas where coefficients are nearly equal to null, resulting in it being sparse in nature, and the echo cancellation algorithm must be strong enough to overcome this sparseness [17, 18, 19]. for improved adaptive identification of the abovementioned systems, various sparse adaptive algorithms have been developed [20-22]. the nlms algorithm, which is sparse-aware set-membership in nature, is used for channel estimation and echo cancellation [22]. in this work, the performances of nlms, pnlms, and variants of the lmf algorithm, i.e., nlmf and pnlmf are compared in the scenario of sparse echo cancellations. their performances are inspected in terms of various measures like mean square error (mse), echo return lossless enhancement (erle), and normalized sparse echo cancellation using variants of least mean fourth and least mean square algorithms 521 projection misalignment (npm) using matlab. the adaptive echo cancellation process is shown in fig. 1. here, x(n) and e(n) are the input signal and error, respectively. fig. 1 adaptive echo cancellation process in this paper, in section 3, different types of sparse algorithms used in this work are described with their mathematical backgrounds. in section 4, the simulated results for sparse echo cancellation using variants of the lms and lmf algorithms are presented. in section 5, the conclusion of the present work and its future extension are presented. 3. sparseness and algorithms for sparse echo cancellation the impulse response of wireless telephone networks is mostly sparse in nature, where the magnitude of most of the components is either very small or zero. only 8–10% of the path shows an active region, as bulk delays are present. fig. 2 shows a common example of sparse impulse response. fig. 2 example of sparse impulse response 522 s. mishra, j. s. roy 3.1. sparseness measure in a qualitative perspective, the degree of sparseness of the impulse response of an environment ranges from highly dispersive to firmly sparse. the equations to measure sparseness quantitatively are 1 2 ( ) ( ) 1 ( ) h nl h l l l h n    = −  −    (1) where 1 01 ( ) ( ) l ll h n h n − = =  (2) 1 2 02 ( ) ( ) l ll h n h n − = =  (3) and, l = length of filter , 00, (n − k) ≈ 0 and k>>n. nlms algorithm uses the input x(n), the output y(n), and the instantaneous estimation error e(n), to estimate the unknown sparse channel h, which is ˆ( ) ( ) ( ) ( )e n d n ht n x n= − (8) where ĥ (n) = nlms adaptive channel estimator at instant n, d(n) = y(n) + v(n), and v(n) = additive noise at the receiver. in the lms, the weight adjustment and tap input vector, x(n) is directly proportional to each other. as a result of which, for a larger value of x(n) vector, the lms deals with a gradient noise amplification problem. so at each iteration the adjustment applied to the tap weight vector is normalized with respect to the square of euclidean norm of x(n) to control the amplification problem, which is 2 ( 1) ( 1)ˆ ˆ( 1) ( ) 2 ( 1) nlms x n e n h n h n x n   + + + = + + + (9) δnlms = σx 2 = the input signal variance. 524 s. mishra, j. s. roy during initialization the regularization parameter δnlms checks division by zero when x(n) = 0. the step size must be in the range as given below to ensure stability.     2 2 ( 1) ( 1) 0 < < 2 ( 1) e x n d n e e n  + + + (10) where e{|x(n)|2} is the power of inputs tap, e{|e(n)|2 } is the power error signal and d(n) is the mean square deviation. 3.4. proportionate normalized least mean square (pnlms) algorithm pnlms was developed from the nlms equation for tracking sparse ir at a faster rate. the step-size update matrix q in the coefficient update equation makes it slightly different from nlms, which is ( ) ( 1) ( 1)ˆ ˆ( 1) ( ) ( 1) ( ) ( 1)t pnlms q n x n e n h n h n x n q n x n   + + + = + + + + (11) where δpnlms = δnlms / l, and the diagonal matrix,  0 1 1( ) diag ( ) ( ) ... ... ... ... ... ... ( )lq n q n q n q n−= (12) these control element is represented as 1 1 0 ( ) ( ) 1 ( ) l l ii k n q n k n l − = =  (13)   0 1 ˆ ˆ ˆ( ) max max , ( ) ... ( ) , ( )l l lk n h n h n h n  −=  (14) with l = 0,1… l – 1. value of parameters ρ = 5/l and the value of parameter γ = 0.01 which prevents ĥ (n) from stalling during the initialization stage. the parameter h(n) is the room impulse response and ĥ (n) is the estimated room impulse response. 3.5. least mean fourth (lmf) and normalized least mean fourth (nlmf) algorithms lmf algorithm evaluates the unknown channel vectors adaptively by using the training signal x(n) and the output y(n). the estimated coefficient vector is w (n) at iteration n. for a standard lmf algorithm, the cost function l(n) is 41 ( ) ( ) 4 l n e n= (15) ( ) ( ) ( ) ( )te n y n w n x n= − (16) e(n) = instantaneous update estimation error at n-th step. the channel vector updating equation is sparse echo cancellation using variants of least mean fourth and least mean square algorithms 525 3( ) ( 1) ( ) ( ) ( ) ( ) ( ) l n w n w n w n e n x n w n    + = − = +  (17) where, µ = step-size parameter. regular lmf algorithm in terms of impulse response is represented by 3ˆ ˆ( 1) ( ) ( )nh n h n e x n+ = + (18) where, β = step-size. the stable nlmf algorithm is given by 3 2 2 2 ( )ˆ ˆ( 1) ( ) , 0 < < 2 ( ) ( ( ) ) n n e x n h n h n x n x n e  + = + + (19) which can be derived from the nlms algorithm. similarly the pnlmf algorithm obtained from equation (19) is given by 3( ) ( 1) ( 1)ˆ ˆ( 1) ( ) 2 ( 1) ( ) ( 1)t pnlmf q n x n e n h n h n x n q n x n   + + + = + + + + (20) δpnlmf = regularisation parameter. 4. sparse echo cancellation using variants of lmf and lms algorithms the various steps for the implementation of variants of lms and lmf algorithms for sparse echo cancellation are given below. step 1: implementation starts with recording a speech signal which is named as x(n). step 2: then, to the input signal, the echo signal is added, which is the delayed version of the input. the distorted and corrupted signal along with the noise signal is named as d(n). step 3: then the error signal e(n) is derived by subtracting the output signal y(n) from d(n), where d(n) = echo signal + noise signal. step 4: then the respective adaptive algorithm is implemented, and optimization is done for error minimization. adaptive filter replicate the echo signal by estimating the echo path of the room and then adapt to the change in environment. different adaptive algorithms show different convergence rates for estimating room acoustic paths. step 5: steps 1–4 are repeated in four different sparse environments. step 6: the adaptive algorithms' performance is compared to each other using the three performance measures listed below. the mean square error (mse) measures the average of the squared difference between the estimated values and the actual value. it is given by 2( ) { ( )}mse n e e n= (21) in an acoustic echo cancellation system the echo signals attenuation is measured by echo return loss enhancement (erle) as given in equation below. reduction in echo is more with increased erle. 526 s. mishra, j. s. roy 2 10 2 10log ( ) ( ) db ( ) y n erle n e n = (22) normalized projection misalignment (npm) calculates the relation between ˆ( )h n to that of h(n), i.e., how close they are to each other and ˆ( )h n = estimated ir and h(n) = unknown ir. it can be expressed as 10 ˆ1 ( ) ˆ( ) 20log ( ) db ˆ ˆ( ) ( ) t t h h n npm n h h n h h n h n   = −      (23) where the denominator is the squared 12-norm operator. the misalignment must be almost equal to zero for better results. according to the above steps, in four different sparse environments (with increasing sparseness), echo cancellation is performed by implementing the nlms, pnlms, and pnlmf algorithms. the performance measures of the three methods, i.e., mse, erle, and npm, are simulated and their results are compared in fig. 5, fig. 6, fig. 7, and fig.8. in fig. 5, non sparse environment with with ψ=∞. in fig. 6, sparse environment with ψ=100, in fig. 7, sparse environment with ψ=40, and in fig. 8, ψ=40. (a) (b) (c) (d) fig. 5 performances of algorithms in sparse environment with ψ=∞ sparse echo cancellation using variants of least mean fourth and least mean square algorithms 527 (a) (b) (c) (d) fig. 6 performances of algorithms in sparse environment with ψ=100 (a) (b) (c) (d) fig. 7 performances of algorithms in sparse environment with ψ=40 528 s. mishra, j. s. roy (a) (b) (c) (d) fig. 8 performances of algorithms in sparse environment with ψ=8 it can be seen from the above graphical results that the pnlmf algorithm showed better results and faster convergence in sparse and non sparse systems, but its results in sparse environments are more impressive. the nlmf algorithm shows good results in sparse environments but not in non-sparse environments. the pnlms algorithm can be considered superior to the nlmf and nlms algorithms, but the results for pnlmf algorithm are more improved than pnlms with respect to mse, erle, npm, and computational complexity. further, a new modified algorithm is proposed to obtain better performances in the sparse environment. this proposed algorithm is a sparse controlled modified proportionate normalized lmf (scmpnlmf) algorithm. the scmpnlmf algorithm demonstrates superior results and faster convergence in both sparse and non sparse systems. scmpnlmf algorithm is derived from the sparse controlled modified proportionate normalized least mean square (scmpnlms) algorithm, also called µ-controlled algorithm which is the modified version of mpnlms. it combines the benefits of sparsity and proportionate adaptation. it is designed to efficiently estimate sparse systems while providing improved convergence and tracking performance. the mpnlms algorithm is derived from the pnlms algorithm (11) but an additional weighting factor ρ (0 < ρ < 1) is used to control the step size adaptation. the introduction of ρ allows the mpnlms algorithm to provide a trade-off between fast convergence (with larger step sizes) and steady-state maladjustment (with smaller step sizes). the weight update equation in mpnlms is: ( 1) ( ) ( ). ( ). ( )w n w n n e n x n+ = + (24) sparse echo cancellation using variants of least mean fourth and least mean square algorithms 529 w(n) is the filter tap weights at time step n, and α(n)=ρ/(λ+||x(n)||2) is the adaptation step size at time step n, which is determined based on the power of the input signal and the sparsity level of the system, and λ is the small positive constant for numerical stability. the scmpnlms is an extension of the mpnlms algorithm with an additional sparsity-induced term. the scmpnlms algorithm can be summarized by the following equation [14,21] ( 1) .( ( ) ( ). ( ). ( )) . .sign( ( ))sw n w n n x n e n w n   + = + − (25) λs is the sparsity regularization parameter, and sign(w(n)) is the element wise sign function that takes the sign of each element in the w(n) vector. the sparsity induced term, µ. 𝜆𝑠. 𝑠𝑖𝑔𝑛(𝑊(𝑛)) promotes sparsity in the adaptive filter by making many filter coefficients zero. the weight update equation of scmpnlms with respect to channel impulse response derived from the pnlms algorithm given in equation (11) is given by ( ) ( 1) ( )ˆ ˆ( 1) ( ) ( ) ( 1) ( ) ( 1)t scmpnlms q n x n e n h n h n n x n q n x n   + + = + + + + (26) where, α(n), used instead of µ, is the step size at iteration n, which controls the rate of updating of the filter coefficients and can be time-varying to enhance the performance according to the sparsity of the system. here, q is the step-size update matrix and δscmpnlms is the regularization parameter. similarly, the scmpnlmf algorithm is an extension of the above algorithms where the robustness of lmf algorithm is incorporated. according to equations (15), (16), and (17), the weight update equation of lmf algorithm is 3( 1) ( ) ( ) ( )w n w n e n x n+ = + (27) the scmpnlmf algorithm combines the robustness of the lmf algorithm with the benefits of the scmpnlms algorithm, providing a sparse and robust adaptive filtering solution. the scmpnlmf algorithm is derived from equations (25) and (27) and represented as ( 1) .( ( ) ( ). ( ). ( )) . .sign( ( ))sw n w n n x n n w n    + = + − (28) here, η(n) is the updated error term of lmf algorithm and the channel impulse response is derived as ( ) ( 1) ( ) ˆ ˆ( 1) ( ) ( ) ( 1) ( ) ( 1) scmpnlmf q n x n n h n h n n x n q n x n    + + = + + + + (29) here, q is the step-size update matrix and δscmpnlmf is the regularization parameter. the scmpnlmf algorithm operates iteratively, updating the filter tap weights based on the input signal, error signal, and the adapted step size. by adaptively adjusting step size based on the power of the input signal and incorporating sparsity measures, the scmpnlmf algorithm can achieve faster convergence, improved tracking of the system, and efficient estimation of sparse systems. the comparison of erle for the proposed scmpnlmf algorithm with other algorithms is plotted in fig. 9. 530 s. mishra, j. s. roy fig. 9 comparison of scmpnlmf algorithm in sparse environment with ψ=8 the comparisons of mse and npm for the proposed scmpnlmf algorithm with other algorithms are plotted in fig. 10. (a)mse (b)npm fig. 10 performances of scmpnlmf algorithm in sparse environment the simulated results for erle in sparse environment are compared in table 1 with the reported results [4, 6, 14, 18] for ψ = 8. table 1 comparison of elre, obtained from different sparse adaptive algorithms algorithm erle (db) ref. 4 pnlms 31.6 ref. 6 nlms 11.1 ref.14 nlmf 31.2 ref.18 pnlmf 31.8 this paper scmpnlmf 32.0 sparse echo cancellation using variants of least mean fourth and least mean square algorithms 531 it can be seen from the table that the value of elre is the largest in the pnlmf algorithm among all other algorithms with an equal iteration number and ψ value. the reduction in echo is more pronounced as erle increases. the scmpnlmf algorithm operates iteratively; updating the filter tap weights based on the input signal, error signal, and adapted step size. 5. conclusion in a non-sparse environment with scattered airs, the nlms algorithm shows good convergence with a low response time. but in a sparse environment, its convergence is not impressive, whereas pnlms shows better results than nlms with respect to erle and mse in sparse environments. but the computational complexity of pnlms is high. the best result with respect to mse, erle, and npm is achieved in the case of the scmpnlmf algorithm, as can be seen from the output graphs. the implementation of lmf and its variants will be further studied in real time and in light of recent scenarios like massive mimo systems. by adaptively adjusting the step size, based on the power of the input signal and incorporating sparsity measures, the scmpnlmf algorithm can achieve faster convergence, improved tracking of the system, and efficient estimation of sparse systems. references [1] w. h. khong, j. benesty and p. a. naylor, "stereophonic acoustic echo cancellation: analysis of the misalignment in the frequency domain", ieee signal process. lett., vol. 13, no. 1, pp.33-36, 2006. [2] s. haykin, adaptive filter theory, prentice-hall, englewood cliffs, nj, 2002. [3] p. a. naylor, j. cui and m. brookes, "adaptive algorithms for sparse echo cancellation", j. signal process., vol. 86, pp. 1182-1192, 2006. [4] c. h. lee, b. d. rao and h. garudadri, "a sparse conjugate gradient adaptive filter", ieee signal process. lett., vol.27, pp. 1000-1004, 2020. [5] y. chen, y. gu and a. o. hero, "sparse lms for system identification", in proceedins of the ieee international conference on acoustics, speech and signal processing (icassp),vol. 3, 2009, pp. 3125-3128. [6] h-c. shin, a. h. sayed and w-j. song, "variable step-size nlms and affine projection algorithms", ieee signal process. lett., vol.11, no. 2, pp. 132-135, 2004. [7] s. mishra and j. s. roy, "blind channel equalization using adaptive signal processing algorithms", iosr j. eng. (iosr-jen), vol. 9, no. 2, pp. 74-79, 2019. [8] r. chinaboina, d. s. ramkiran, h. khan, m. usha, b. t. p. madhav, k. p. srinivas and g. v. ganesh, "adaptive algorithms for acoustic echo cancellation in speech processing", int. j. res. rev. appl. sci., vol. 7, no. 1, pp. 38-42, 2011. [9] c. ye, k. toyoda and t. ohtsuki, "improved sparse adaptive algorithms for accurate non-contact heartbeat detection using time-window-variation technique", in proceedings of the 40th annual international conference of the ieee engineering in medicine and biology society (embc), honolulu, hi, usa 18-21 july 2018, pp. 1-6. [10] i. hassani, a. kedjar, m. a. ramdane, m. arezki and a. benallal, "fast sparse adaptive filtering algorithms for acoustic echo cancellation", in proceedings of the international conference on communications and electrical engineering (iccee), 17-18 dec.,2018, el oued, algeria, pp. 1-5. [11] a. zhang, p. liu, j. sun and b. ning , "block-sparsity log-sum-induced adaptive filter for cluster sparse system identification", ieee access , no. 8, pp. 175265-175276, 2020. [12] c. paleologu, j. benesty and s. ciochina, sparse adaptive filters for echo cancellation, springer, 2010. [13] d.l. duttweiler, "proportionate normalized least-mean squares adaptation in echo cancellers", ieee trans. speech audio process., vol. 8, no. 5 , pp. 508-518, 2002. [14] e. eweda, "a stable normalized least mean fourth algorithm with improved transient and tracking behaviors", ieee trans. signal process., vol. 64, no. 18, pp. 4805-4816, 2016. https://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=97 https://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=97 https://ieeexplore.ieee.org/author/37087169868 https://ieeexplore.ieee.org/author/37273848200 https://ieeexplore.ieee.org/author/37267857700 https://ieeexplore.ieee.org/author/37085615366 https://ieeexplore.ieee.org/author/37085822248 https://ieeexplore.ieee.org/author/37268988400 https://ieeexplore.ieee.org/author/37086480385 https://ieeexplore.ieee.org/author/37087240871 https://ieeexplore.ieee.org/author/37088519983 https://ieeexplore.ieee.org/author/37086813023 https://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=6287639 https://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=18676 532 s. mishra, j. s. roy [15] w. h. khong and p. a. naylor, "selective-tap adaptive algorithms in the solution of the non-uniqueness problem for stereophonic acoustic echo cancellation", ieee signal process. lett., vol. 12, no. 4, pp. 269272, 2005. [16] h. zhang, k. tan and d. wang, "deep learning for joint acoustic echo and noise cancellation with nonlinear distortions", in proceedings of the 20th annual conference of the international speech communication association (interspeech), graz, austria, 2019, pp.4255-4259. [17] a. akhbari and a. ghaffar, "the performance comparison of improved continuous mixed p-norm and other adaptive algorithms in sparse system identification", int. j. adv. intell. paradig., vol. 16, no. 1, pp. 65-74, 2020. [18] m. o. sayin, y. yilmaz, a. demir and s. s. kozat, "the krylov-proportionate normalized least mean fourth approach: formulation and performance analysis", j. signal process., vol. 109, pp. 1-13, 2015. [19] x. zhang, y. liu and x. wang, "a sparsity preestimated adaptive matching pursuit algorithm", j. electr. comput. eng., vol. 2021, pp. 1-8, 2021. [20] z. habibi, h. zayyani and md. s. e. abadi, "a robust subband adaptive filter algorithm for sparse and block-sparse systems identification", j. syst. eng. electron., vol.32, no. 2, pp.487-497, 2021. [21] f. l. perez, c. a. pitz and r. seara, "a two-gain nlms algorithm for sparse system identification", signal process., vol. 200, p. 108636, 2022. [22] y. li, y. wang and t. jiang, "sparse-aware set-membership nlms algorithms and their application for sparse channel estimation and echo cancelation", aeü-int. j. electron. commun., vol. 70, pp. 895-902, 2016. https://www.inderscience.com/info/inarticletoc.php?jcode=ijaip&year=2020&vol=16&issue=1 https://www.sciencedirect.com/science/journal/01651684 https://www.sciencedirect.com/science/journal/01651684/109/supp/c https://www.hindawi.com/journals/jece/ https://www.hindawi.com/journals/jece/ https://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=9430100 13343 facta universitatis series: electronics and energetics vol. 38, no 3, september 2025, pp. 533 551 https://doi.org/10.2298/fuee2503533r © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper improving extractive text summarization via efficient coati algorithm for single document jyotirmayee rautaray1, sangram panigrahi2, ajit kumar nayak2 1department of computer science & engineering, siksha ‘o’ anusandhan (deemed to be university), bhubaneswar-751030, odisha, india 2department of computer science & information technology, siksha ‘o’ anusandhan (deemed to be university), bhubaneswar-751030, odisha, india orcid ids: jyotirmayee rautaray https://orcid.org/0000-0003-2747-3919 sangram panigrahi https://orcid.org/0000-0003-1703-4613 ajit kumar nayak https://orcid.org/0000/0003/2302-9458 abstract. in the digital era, the rapid expansion of online information demands efficient automated text summarization techniques to extract key insights from large documents. this study introduces a novel single-document extractive summarization approach that utilizes term frequency-inverse topic frequency (tf-itf) for feature extraction and the coati optimization algorithm (coa) for optimal sentence selection. coa enhances summarization performance by balancing precision and recall through an adaptive fitness function, improving the quality of extracted summaries. the proposed model is evaluated on duc 2002, 2003, and 2005 datasets using rouge, bleu, precision, recall, and f1-score metrics. comparative analysis against state-ofthe-art optimization algorithms, including pso, cso, gwo, bco, qabc, mcso, and glo, demonstrates that coa outperforms existing techniques, achieving higher recall and f1 scores while maintaining competitive precision. these findings establish coa as an effective optimization technique for enhancing automated text summarization. key words: term frequency-inverse topic frequency, coati optimization algorithm, vectors, single document text summarization, rouge scores, bleu score 1. introduction the major aim of text summarization is to condense long written texts into a precise, concise and understandable format which highlights the most important details from the original source. by picking out important lines and incorporating all pertinent details from the source text, automatic text summarization creates summaries. in natural language processing (nlp), summarization is a major challenge since it necessitates received december 19, 2024; revised march 01, 2025 and march 15, 2025; accepted march 17, 2025 corresponding author: jyotirmayee rautaray department of computer science & engineering, siksha ‘o’ anusandhan (deemed to be university), bhubaneswar-751030, odisha, india e-mail: jyotirmayee.1990@gmail.com https://orcid.org/0000-0003-2747-3919 https://orcid.org/0000-0003-1703-4613 https://orcid.org/0000/0003/2302-9458 534 j. rautaray, s. panigrahi, a. k. nayak thorough text analysis, including lexical and semantic analysis, in order to generate highquality summaries. the two primary methods of summarization are abstractive and extractive. whereas abstractive summarization interprets and rewords the essential portions to produce the final summary, extractive summarization finds and immediately copies the most significant passages from the source material into the summary [1][2]. creating a summary that successfully communicates the main ideas of the original text is the goal of abstractive summarization, which frequently involves merging words or phrases which are not found in the given text [3]. conversely, extractive summarizing generates a summary solely from the original material by using the text's original words, structures, or phrases. automated extractive text summarization is a valuable tool in education, as it efficiently extracts key elements without requiring manual effort or human intervention [4]. depending on the type of the inputs, the documents can be divided into two categories: single-document and multi-document summarization. in contrast to multi-document summary, which entails summarizing a group of connected documents, this work concentrates on single-document text summarization, in which the input consists of a single document [5]. summarization involves three key objectives: generating the summary from one or more documents, retaining essential information, and producing a concise summary [6]. for single-document systems, the summary is generated solely from that individual document. four main extractive summarization techniques are commonly used, depending on the text: machine learning, meta-heuristics, statistical, and semantic methods [7][8]. in order to find near-optimal solutions for complicated problems, metaheuristic optimization algorithms use techniques modelled after natural processes, such as evolution or swarm activity, to explore the solution space. coati optimization, a metaheuristic approach, emulates the foraging behavior of coatis, balancing exploration and exploitation by simulating their adaptive and dynamic search strategies to find optimal solutions [9]. recent advancements have focused on refining these models with attention mechanisms and finetuning on large datasets to generate more accurate and context-aware summaries [10]. regardless of previous summaries, the main goal is to quickly create one from a given text or collection of documents using a variety of methods and algorithms. the goal of metaheuristic algorithms in this context is to identify high-scoring phrases. these methods are employed in text summaries to choose the best or nearly best collection of sentences that create an understandable and instructive synopsis. examples include genetic algorithms and other optimization methods [11][12][13]. an innovative optimization method that draws inspiration from coatis' natural behaviors is the coati optimization algorithm (coa). coa provides a number of benefits for resolving global optimization issues, including the elimination of the need for parameter adjustments due to its lack of control parameters and its high effectiveness in addressing a big range of optimization problems in different scientific domains, including intricate high-dimensional issues. 1.1. contribution ▪ an organized method for summarizing a single document that includes tf-itf feature extraction and thorough text preprocessing, improving the accuracy and applicability of the summaries. ▪ this paper introduces the innovative use of the coa for summary generation, optimizing vector-based processes with a unique fitness function, achieving greater efficiency compared to traditional methods. improving extractive text summarization via efficient coati algorithm for single document 535 ▪ the study uses rouge scores, bleu scores, accuracy, recall, and f-score metrics to statistically assess the efficacy of the coa on the duc 2002, 2003, and 2005 datasets. it shows that the coa can generate clear and insightful summaries from complicated textual material. structure of the paper: section 1 provides an overview of text summarization and its various forms; section 2 reviews the literature on document summarization using various methods and algorithms; section 3 introduces the proposed model, methods, and coa; section 4 covers the research findings and result analysis; and section 5 concludes the study. 2. related works while multi-document summarizing entails producing a summary from several papers, single-document summarization creates a summary from a single document. while it is possible to apply single-document summary techniques to multi-document summarization, summarizing several documents is far more difficult. this section examines previous attempts in the literature on text summarization and looks at several optimization techniques and algorithms that have been put forth for this aim. cheng et al. [14] proposed a data-driven approach leveraging continuous sentence features and neural networks. they developed a hierarchical document-based framework to support single-document summarization. the models are trained with very big datasets large number of document-summary pairs, without relying on language annotations. two types of models were created, focusing on word and phrase extraction. this approach enables the models to learn informativeness characteristics through continuous approximations, enhancing the summarization process. kryściński et al. [15] proposed a model-based, weakly-supervised approach for detecting discrepancies and verifying factual consistency between source documents and generated summaries. sentences from source texts are modified using rule-based transformations to create training data. the model is trained on three key tasks: 1) assessing whether sentences retain factual consistency after translation; 2) extracting a supporting span from the source documents that upholds the consistency assumption; and 3) identifying any incongruent spans from the summary sentence. debnath, d et al. [16] proposed an archive-based micro genetic-2 algorithm to tackle the multi-objective extractive single document summarization problem. the evaluation was conducted using the duc-2001 and duc-2002 datasets, and the results were compared with previous methods using rouge metrics. timea bezdan et al. [17] introduced a hybrid ffo method that outperforms k-means for text document clustering. the case study, which examined text documents with limited functionalities, demonstrated the effectiveness of that given approach. debnath, d et al. [18] addressed a single-document extraction problem for automated text summarization and used cat swarm optimization (cso). cso aims to produce useful, redundant-free summaries with ample coverage. compared to the leading dataset techniques, rouge-1 and rouge-2 scores improved by 25% and 5%, respectively. pati and rautray et al. [19] employed the duc 2003 dataset to showcase the superior performance of cuckoo search (cs) for single-document extractive summarization, comparing it with the firefly algorithm (ffa) and ant colony optimization (aco). 536 j. rautaray, s. panigrahi, a. k. nayak svore et al. [20] introduced netsum, a novel automated summarization method utilizing neural networks. in this approach, each sentence is analyzed based on a set of features that highlight its importance within the text. the method incorporates advanced features derived from wikipedia entities and recent search query data. mandal, s et al. [21] proposed a method combining sentiment analysis, language scoring, and cuckoo search (cs) computation. the approach uses sentence scoring techniques to evaluate phrases based on mathematical frameworks, and cs computation is then applied to select the most suitable phrases for generating the summary. jain et al. [22] proposed using the pso algorithm for text summarization in the punjabi language. the search process is conducted by rapidly moving particles that update their positions and velocities at the end of each iteration. throughout the generations, the algorithm continuously updates the personal best and global best solutions. zhang et al. [33] proposed a comprehensive survey on text summarization, transitioning from statistical methods to large language models (llms). it reviewed advancements in benchmarking, modeling, and evaluation metrics, emphasizing the role of pre-trained language models (plms) and llms in improving summarization tasks. the study utilized various standard datasets to evaluate the techniques and provided insights into the latest trends and challenges. yadav et al. [34] proposed an analysis of extractive and abstractive text summarization techniques to address information overload. the study explored standard datasets, evaluation metrics, and highlighted challenges in creating advanced summarizers. it reviewed techniques such as extractive and abstractive summarization and analyzed their effectiveness on widely used summarization datasets. mirjalili et al. [35] proposed the grey wolf optimizer (gwo), an optimization algorithm inspired by the hierarchical hunting mechanism of grey wolves. gwo has been applied in text summarization to enhance sentence selection based on relevance and informativeness. the algorithm effectively balances exploration and exploitation, leading to high-quality summaries. however, it may suffer from premature convergence in high-dimensional datasets. karaboga et al. [36] introduced the bee colony optimization (bco) algorithm, which mimics the foraging behavior of honeybees to extract key sentences for summarization. this method effectively reduces redundancy and enhances informativeness by leveraging swarm intelligence. nevertheless, its performance is highly dependent on parameter tuning, which can impact consistency across different datasets. wang et al. [37] developed multi-colony swarm optimization (mcso) for text summarization, where multiple cooperating colonies work together to extract meaningful sentences. this approach enhances the diversity and quality of generated summaries through multi-objective optimization. however, the increased computational complexity due to interactions among multiple colonies can be a drawback for large-scale document processing. sharma et al. [38] proposed glowworm swarm optimization (glo) for extractive summarization. inspired by glowworm luminescence, this algorithm dynamically selects relevant sentences based on a luciferin-based attraction mechanism. the adaptability of glo ensures high-quality summaries with strong contextual relevance. however, it can face computational overhead when processing large document sets. yuan et al. [39] introduced the quick artificial bee colony (qabc) algorithm, an enhanced version of the traditional bco designed for faster convergence in optimization problems, including text summarization. by refining the search mechanism and reducing improving extractive text summarization via efficient coati algorithm for single document 537 unnecessary computations, qabc improves search efficiency and sentence selection speed. however, it still requires careful parameter tuning to maintain robustness across diverse datasets. table 1 existing research contains a range of optimization techniques sl. no author, reference dataset methodology advantage disadvantage 1 cheng et al., [14] duc 2002, daily mail news highlights corpus encoding and attention-based extractor the approach leverages the power of neural networks for more effective summarization without requiring hand-crafted features data dependency, relies on extractive summarization, complexity 2 debnath d et al., [16] duc 2002, duc 2001 amga2 efficient for extractive summarization with multi-objective optimization. computationally expensive performance depends on parameter tuning. 3 kryściński et al., [15] cnn/ dailymail bert leverages pre-trained transformers for highquality abstractive summaries. struggles with factual consistency in longer documents. 4 timeabezda n et al., [17] text datasets ffa good for feature selection, improving summary relevance and quality. not suitable for highly dynamic or complex datasets. 5 debnath d et al., [18] duc 2002, duc 2001 cso enhances coherence and accuracy in extractive summarization tasks. limited generalization across diverse summarization datasets. 6 pati and rautray, et al., [19] duc 2003 aco, ffa, and cso hybrid approach improves efficiency, accuracy, and feature optimization. increased model complexity and resource requirements. 7 svore et al., [20] duc 2002, duc 2003 rank net learning algorithm scalability, relevance ranking generalization issues, potential for information overload 8 mandal s et al., [21] kaggle dataset csa incorporation of sentiment analysis, scalability, feature integration generalizability issues, dataset dependency, computational complexity 9 jain et al., [22] punjabi datasets pso optimization efficiency, featurebased scoring, scalability language dependency, limited dataset, lack of semantic understanding 538 j. rautaray, s. panigrahi, a. k. nayak 10 zhang et al., [33] various summarization datasets statistical, deep learning, and llms offers a thorough historical and contemporary analysis of text summarization methods does not propose new models or techniques and relies heavily on existing literature. 11 yadav et al., [34] standard summarization datasets text rank, seq2seq offers a comprehensive overview of state-of-theart methods, aiding researchers in understanding advancements in the field. heavily relies on existing datasets and benchmarks, limiting novelty 12 mirjalili et al., [35] standard benchmark datasets for optimization problems grey wolf optimizer (gwo) balances exploration and exploitation efficiently, leading to high-quality summaries may converge prematurely in complex, highdimensional problems 13 karaboga et al., [36] various text datasets, including news articles bco reduces redundancy and enhances informativeness through swarm intelligence performance highly dependent on parameter tuning 14 wang et al., [37] duc datasets (duc-2001, duc-2002) mcso multi-objective optimization ensures diverse and high-quality summaries increased computational complexity due to multiple colony interactions 15 sharma et al., [38] scientific and news article datasets glo dynamically adjusts selection based on informativeness and context may struggle with large document sets due to computational overhead 16 yuan et al., [39] summarization benchmark datasets qabc improves search efficiency and sentence selection speed through refined search mechanisms requires careful parameter tuning to maintain robustness across datasets existing text summarization methods encounter several challenges, including difficulty in generalizing to various document structures and maintaining factual consistency between summaries and source texts. techniques such as genetic algorithms and firefly algorithms often fall short in multi-objective optimization, while neural networks and sentiment analysis approaches may struggle to adapt to diverse text types and languages. additionally, particle swarm optimization-based methods may prove inadequate for handling complex summarization tasks effectively. the coa addresses these limitations by balancing exploration and exploitation, which enhances adaptability to various text types and structures. coa improves search efficiency for optimal summarization solutions and reduces reliance on extensive datasets, making it more effective in multiobjective problems and improving overall summarization accuracy. the surge of vast electronic texts in the digital age has created a growing need for efficient automated text summarization methods to distill essential information succinctly. current improving extractive text summarization via efficient coati algorithm for single document 539 extractive and abstractive approaches often struggle to accurately capture key content while maintaining readability and coherence. moreover, many existing models depend on complex linguistic annotations and manual feature engineering, which can hinder scalability and adaptability across various text types. by investigating neural network-based methods and optimization algorithms, this study tries to address above issues and uplift the effectiveness and caliber of single-document summarization. the goal is to create strong frameworks that generate excellent summaries without the need for a lot of human input or language resources. 3. proposed method the approach follows a structured workflow designed to generate concise and informative summaries effectively. the process begins with text preprocessing, including cleaning, tokenization, stop word removal, and lemmatization to standardize the content. in the feature extraction phase, words are transformed into vector representations, and sentence relevance is ranked using tf-idf. additional processing is applied to refine vector features. during summary generation, the coa selects the most informative sentences using a fitness function. the final summary is then evaluated using metrics such as rouge score, bleu score, precision, recall, and f-score. these steps are visually represented in the improved figure 1. fig. 1 flow diagram of single document summarization 3.1. text pre-processing this procedure, which comes before summary, entails transforming the original report into a more organized and controllable data format. to summarize individual documents, the duc 540 j. rautaray, s. panigrahi, a. k. nayak 2002, duc 2003, and duc 2005 databases are utilized. these datasets are widely recommended benchmarks in text summarization research. these datasets offer high-quality, manually curated summaries that ensure a rigorous evaluation of summarization techniques. while modern datasets like reddit, the new york times annotated corpus, or wikinow are relevant for contemporary challenges, the duc datasets remain a preferred choice due to their structured nature and established use in benchmarking. segmenting sentences, tokenizing words, eliminating stop words, and lemmatizing words are important steps in this process. cleaning data: to clean data, first identify and handle missing values by removing or imputing them. next, duplicate entries are removed to ensure data consistency. finally, text data is standardized by converting to lowercase and stripping whitespace. sentence segmentation: sentence segmentation entails tokenizing the individual words that make up sentences. punctuation, including commas, semicolons, question marks, colons, and periods is used to divide the message into sentences [23]. word tokenization: tokenization divides sentence onto words according to grammar and blank spaces [23]. stop word removal: these are those words that carry little to no significant meaning, such as conjunctions, articles, possessive words, pronouns, and relational terms. these words, like "is," "and," and "the," can negatively impact the efficiency of processing large tokens, making it essential to remove them from text during analysis. after dividing the text into paragraphs, these stop words are filtered out to improve the relevance of the remaining words [24]. lemmatization: lemmatization is the process of reducing words to their root words in order to lessen their redundancy [25]. the basic steps involved in text preprocessing steps are illustrated in figure 2 given below. fig. 2 overview of text preprocessing steps 3.2. feature extraction a numerical statistical technique called term frequency-inverse topic frequency (tfitf) is applied in nlp applications including data extraction and text mining. it enhances the traditional bag of words method for converting text into vectors by considering a word's significance within a specific document relative to other documents in the corpus. a word's tf-itf score is calculated by multiplying two statistical components. the first, term frequency (tf), measures how important a word is within a particular document. the second, improving extractive text summarization via efficient coati algorithm for single document 541 inverse topic frequency (itf), reflects how frequently the word appears across the entire corpus. as a result, words that occur frequently in all documents receive lower scores. the tf-itf output for each document is a high-dimensional sparse vector, where the number of non-zero elements correspond to the count of unique words in the text as shown in equn (1), (2), and (3) [26]. ( ) . frequency of term in the document tf term total no of terms in the document = (1) ( ) . log . total no of topic itf term no of topic with that terms in it = (2) ( ) ( ) ( )tf itf term tf term itf term− =  (3) tf-itf values range between [0,1] with ten-digit precision. once these values are calculated, the terms are arranged in descending order. each term is then paired with its respective value to create a new word scenario. this arrangement is crucial for analyzing the tf-itf values of individual words, allowing for the examination of previously overlooked results. the significance of a phrase is determined by calculating the tf-itf value of each word, and the overall importance of the phrase is derived from the combined value of all words, including the action word. the words are then listed chronologically in descending order of their importance. the tf-itf technique follows the traditional tf-idf principles, where word importance is determined based on document frequency. essentially, tf-itf is conceptually the same as tf-idf, and we acknowledge that the standard term "inverse document frequency (idf)" should be used for consistency. tf_itf calculation with one example is shown through the given example. consider a corpus with 5 topics, and a document containing the following words with respective frequencies: term frequency in document total terms in document topics containing term “cancer” 4 100 3 “scan” 2 100 2 “deep” 1 100 5 tf("cancer") =100/4=0.04 tf("scan") =100/2=0.02 tf("deep") =100/1=0.01 itf("cancer") = log (5/3)=0.22 itf("scan") = log (5/2)=0.40 itf("deep") = log (5/5)=0.00 tf_itf("cancer") = 0.04×0.22=0.0088 tf_itf("scan") = 0.02×0.40=0.0080 tf_itf("deep") = 0.01×0.00=0.0000 after computing these values, the terms are ranked in descending order of importance: 1. "cancer" → 0.0088 2. "scan" → 0.0080 3. "deep" → 0.0000 542 j. rautaray, s. panigrahi, a. k. nayak 3.3. vectorization the phrases are now transformed into vectors in this stage. each phrase is broken up into a list of separate words. since every word in the collection has a tf-itf score, it is allocated to them. the words' probable vector forms are listed in this list of tf-itf scores. the algorithm then receives these vectors in order to process and produce an outcome [27]. in our proposed approach, words are represented using tf-itf, a numerical statistical technique for feature extraction in text processing. unlike word embeddings, which capture semantic relationships between words, tf-itf focuses on statistical significance by determining a word’s importance within a document relative to a corpus. this means our method does not rely on contextual similarity or distributional semantics but instead emphasizes the frequency-based importance of words. sentences are then represented as vectors of tf-itf weights, allowing for effective text representation without requiring word embeddings. these tf-itf-based vectors are then used as input for further processing in our vectorization stage, where each phrase is broken into separate words and assigned their respective tf-itf scores. the resulting vectors are then optimized using the coa to enhance the performance of the model, ensuring effective parameter tuning for improved classification accuracy. by using the coa to choose hyperparameters such learning rate, batch size, dropout rate, and embedding dimension optimally, they improve the vectorization. this approach ensures efficient and effective parameter tuning. 3.3.1. hyper-parameter optimization using coati optimization algorithm (coa) coatis, also called coatimundis, belong to the procyonidae family's nasua and nasuella genera, which belong to diurnal animal. each coati has a long, non-prehensile tail used for balance and signalling, black paws, tiny ears, and a slender head with a flexible, elongated, somewhat upward-turned nose. the adult coatis can be as long as their body, measuring between 33 to 69 cm from top to bottom tip [28]. coati optimization algorithm is used for improving extractive summarization rather than deep learning-based models. unlike neural summarization models, which require large-scale training data and significant computational resources, coati provides an efficient and interpretable optimization technique that enhances summarization outcomes without extensive learning-based mechanisms. the coati optimization algorithm is inspired by coatis' natural hunting and escape behaviors. during the hunting phase, coatis search for food by exploring various locations, which mirrors the algorithm’s global search process—broadly exploring the solution space to identify optimal parameters. in the escape phase, coatis swiftly adjust their positions to evade predators, resembling the local search phase, where the algorithm fine-tunes its parameters for better optimization. by integrating these two strategies, coati efficiently optimizes hyperparameters, enhancing extractive summarization performance. hyperparameter optimization is the process of determining the best mix of vectorization hyperparameter settings to optimize performance on data in a reasonable quantity. this process is essential to vectorization capacity for precise result prediction. most of this input text uses the hyperparameters' default values. the proposed model optimizes the hyperparameter utilizing the coa. the hyperparameter values for learning rate, batch size, and dropout rate are selected based on common practices to balance model performance and efficiency. the learning rate, typically ranging from , is chosen to ensure stable convergence; too small a value slows learning, while too large a value can lead to instability. batch sizes of 16, 32, 64, 128, and 256 are used to balance computational efficiency and generalization, with improving extractive text summarization via efficient coati algorithm for single document 543 smaller sizes offering noisy but beneficial gradient updates, and larger sizes providing stable gradients but requiring more memory. the dropout rate, ranging from 0.1 to 0.5, helps prevent overfitting by randomly deactivating neurons during training, where lower values provide minimal regularization and higher values offer stronger regularization to ensure robust learning. these ranges are widely used because they offer flexibility in achieving an optimal model configuration. the coa is used to optimize these hyperparameters. the coa step-by-step procedure is explained below. step 1: initialization: the main idea behind this method is to catch the optimal hyperparameter. first, establish the problem's upper and lower boundaries, the variables' dimensionality d, the maximum number of iterations, and the coati size n. lr, bs, dr, and ed are among the hyperparameters that make up each solution that the coati represents. first, a selection is made at random. the following equation displays the initial solution format:  1 2, ,n np s s s=  (4) here, pn is the nth solution or coati’s position  , , ,i i s lr bs dr ed= (5) step 2: fitness calculation: after initialization, each solution's fitness is evaluated using the suggested ao2 technique. in this instance, the fitness function is used to define the classification accuracy. the most effective solution is one with the topmost fitness value. the fitness function is determined with the help of the equation: tp tn fitness max tp tn fp fn +  =   + + +  (6) step 3: updating using coa: coa utilizes 2 distinct techniques known as the attacking and hunting strategy on iguanas and process of escaping from predators. strategy 1: hunting and attacking strategy on iguana coatis moves around in the search space as a result of this strategy, demonstrating the coa's ability to do global research within the problem-solving domain. ( )1 1 , , ,: . ( . )p p i i j i j j i js s s r iguana i s= + − (7) after reaching the floor, the iguana is placed at random around the search area. coats on the ground move in the search space based on this random placement, where n is the number of coatis. : .( ), 1,2, , j g g j z j jiguana iguana i r uz lz j m= + − =  (8) 1 , ,1 1 , , , .( , ), : .( ) g g i j j i j iguana fp p i i j g i j i j j s r iguana i s f s s s r s iguana else   + − =  + + (9) 1, 2, , 2 2 n n for i n     = + +         (10) the update mechanism accepts the new position that is determined for each coati when it raises the value of the target function; otherwise, the coati remains in its original location. this update need is intended for i = 1, 2, . . . , n. 544 j. rautaray, s. panigrahi, a. k. nayak 1 1, , , p p i i i i i s f f s s else   =   (11) here si p1 represents the newly calculated location for the ith coati, while si,j p1 denotes its jth measurement, fi p1 is the value of its objective function. the iguana indicates the location of the best performing member in search region, with iguana representing its jth dimension.iguanaj g refers to the jth measurement at this randomly chosen position, while figuana g represents the value of the objective function at this location. strategy 2: the act of running away from a predator because of the maneuvers it has made in this technique, coatis’position is secure with relation to its present position, which implies that the coa can be employed in local search. , , 1,2, , j jlocal local j j lz lz lz uz where t t t t = = =  (12) ( )2 2 , ,: (1 2 ). .( .( ))p p local local local local i i j i j j j j js s s r lz r uz r uz lz= + − + + − (13) the newly found and determined position is found to be appropriate if it raises the objective function's value. 2 2, , , p p i i i i i s f f s s else   =   (14) here si p2 is the new position determined by using the second phase of coa for the ith coati, si,j p2 is the jth dimension, fi p2 is the outcome of its objective function, step 4: termination condition: until the best hyper-parameter choice is achieved, the procedure is repeated. the selected hyperparameter value is applied to the improved vectorization. the coa pseudo-code is displayed in the table below. fig. 3 flowchart for coa improving extractive text summarization via efficient coati algorithm for single document 545 the proposed method utilizes a classification-based approach for text summarization, where each sentence is classified as either part of the summary or not. this classification is performed using a neural network, and to ensure optimal performance, the coati optimization algorithm (coa) is employed for hyperparameter tuning. specifically, coa optimizes key hyperparameters such as learning rate, batch size, dropout rate, and embedding dimension, which significantly impact the model’s accuracy and efficiency. the optimization process begins with the initialization of a population of coatis, where each represents a unique combination of hyperparameters. the fitness of each candidate solution is evaluated based on classification accuracy, and the positions of coatis are updated using two strategies: the hunting and attacking strategy for global exploration and the escape from predators strategy for local refinement. this iterative process continues until the best set of hyperparameters is identified, which is then applied to the neural network model. as a result, while coa does not directly perform summarization, it plays a crucial role in enhancing the neural network’s ability to accurately classify sentences, thereby improving the overall quality of the generated summary. 4. result and discussion the findings show that the coa outperforms current optimization algorithms in producing succinct and insightful summaries, as evidenced by higher rouge and bleu scores. the coa's potential as a potent tool for automatic text summaries is highlighted in the debate, which also highlights how well it extracts important information from documents while maintaining summary quality. a computer with an intel (r) core (tm) i5 4570s cpu running at 2.90 ghz, 8gb of ram, windows 64-bit, and python was used for the experiments. 4.1. dataset description in order to evaluate automated text summarizers, the dataset contains a variety of document collections as well as human-generated summaries. each dataset contains single-document summaries with varying file sets (50, 30, and 50 sets, respectively) and differing numbers of files per set (12, 20, and 25). the type of documents ranges from human-written queries with summaries (duc 2002), news articles with summaries (duc 2003), to queries with five reference summaries (duc 2005). these datasets are sourced from duc.nist.gov or trec, with summaries containing average word counts of 112, 101, and 109, respectively. 4.2. evaluation metrics it has chosen many metrics to gauge how well change-proneness prediction models are doing. they have selected such as rouge score, bleu score, precision, recall, and f-score. the study compares the performance of the coa with existing state-of-the-art optimization algorithms such as pso [29], cso, gwo [30], quick artificial bee colony optimization algorithm (qabc) [31], modified cat swarm optimization algorithm (mcso), greedy local optimizer (glo) [32]. 546 j. rautaray, s. panigrahi, a. k. nayak recall recall is a performance indicator that quantifies the percentage of pertinent information that is successfully extracted from the source text in machine learning tasks such as text summarization. it is computed as follows equation (15): tp recall tp fn = + (15) precision a performance parameter called precision is used to assess how accurately information is obtained in machine learning activities such as text summarization. it is computed as follows equation (16): tp precision tp fp = + (16) f1-score a statistic called the f1-score is used to assess how well a summarization model balances recall and accuracy. the f1-score assigns equal weight to accuracy and recall by taking the harmonic mean of these two criteria. it is computed as follows equation (17): 2 1 2 tp f score tp fp fn − = + + (17) tp signifies the true positive, fp the false positive, tn the true negative, and fn the false negative. rouge rouge (recall-oriented understudy for gisting evaluation) ratings were first introduced and have subsequently become widely recognized measures for assessing text summarization systems. the degree of overlap between machine-generated and humanwritten summaries is used to measure summarization quality in equation (18). ( ) ( )( ) j i match n gram v v s refsummarizes n grams scount rouge s refsummarizes n grams s count n gram −   −  =  −  −      (18) bleu the produced summary's word count is measured by bleu (bilingual evaluation understudy) in comparison to a reference summary in equation (19), (20), ( )1 exp log n n nn blue bp w p − =   (19) 1 1 r c if c r bp e if c r −   =    (20) improving extractive text summarization via efficient coati algorithm for single document 547 figure 4(a) presents rouge scores across three metrics—f-measure, precision, and recall—highlighting performance for rouge-1, rouge-2, and rouge-l. in the chart, f-measure is represented in blue, recall in green, and precision in red. the outcomes unequivocally show how effective the suggested method is in comparison to alternative strategies. the performance metrics of several methods on the singledocument 2002 dataset are shown in figure 4(b). the suggested method performs better than the others, especially when considering the f1-score of 0.51. all metrics show that the pso and gwo techniques perform poorly. overall, the proposed approach proves to be more effective than the other methods evaluated. fig. 4 single-document duc 2002 dataset(a): rouge-1, rouge-2, rouge-l results and (b) evaluation metrics of proposed work with current techniques rouge-1, rouge-2, and rouge-l scores for various techniques on the singledocument 2003 dataset are shown in figure 5(a). fig. 5 single-document duc 2003 dataset (a): comparison of proposed approach with existing methods using rouge-1, rouge-2, rouge-l metrics (b): analysis of performance metrics for proposed work and existing methods. 548 j. rautaray, s. panigrahi, a. k. nayak in all measures, the suggested technique excels, especially in rouge-1. the proposed methodology outperforms pso and cso in recall and f-measure, demonstrating its efficacy. figure 5(b) compares performance metrics like bleu score, precision, recall, and f1-score for the same dataset. the proposed technique again beats alternatives with an f1-score of 0.78. in comparison, pso and gwo lag in precision and recall. fig. 6 single-document duc 2005 dataset (a): rouge-1, rouge-2, rouge-l scores between the proposed approach and existing methods. (b) evaluation of performance metrics for the proposed method compared to existing approaches. rouge-1, rouge-2, and rouge-l scores for different approaches on the singledocument 2005 dataset are compared in figure 6(a). the approach with the highest scores in all criteria excels in rouge-1 and rouge-l. the graph also shows precision, recall, and f-measure, proving the technique works. the suggested algorithm outperforms pso and cso in recall and f-measure, proving its superiority. figure 6(b) compares bleu, precision, recall, and f1-score for the same dataset. all other methods fail to match the proposed method's 0.92 f1-score. pso and gwo score lower in bleu and precision. table 2 compares the suggested model's performance in detail. table 2 comparative analysis of the proposed model dataset → duc 2002 duc 2003 duc 2005 techni ques ↓ bleu precision re call f1 score bleu precision re call f1 score bleu precision re call f1 score pso 0.15 0.27 0.54 0.42 0.20 0.28 0.65 0.42 0.15 0.27 0.54 0.42 cso 0.19 0.28 0.65 0.40 0.15 0.29 0.67 0.42 0.19 0.28 0.65 0.40 gwo 0.16 0.25 0.69 0.39 0.19 0.23 0.69 0.39 0.16 0.25 0.69 0.19 bco 0.15 0.27 0.76 0.43 0.20 0.25 0.76 0.42 0.15 0.27 0.76 0.43 mcso 0.17 0.24 0.80 0.38 0.18 0.24 0.78 0.39 0.17 0.24 0.80 0.38 glo 0.19 0.26 0.73 0.41 0.17 0.28 0.77 0.41 0.19 0.26 0.73 0.41 qabc 0.16 0.23 0.74 0.36 0.16 0.26 0.72 0.38 0.21 0.29 0.71 0.39 proposed 0.29 0.35 0.92 0.51 0.22 0.30 0.78 0.41 0.26 0.34 0.91 0.49 the proposed approach is evaluated against state-of-the-art optimization techniques, including pso, cso, gwo, bco, mcso, glo, and qabc, using the duc 2002, 2003, and 2005 datasets. performance is assessed based on bleu, precision, recall, and f1 score. the results indicate that our method surpasses existing techniques, particularly improving extractive text summarization via efficient coati algorithm for single document 549 in recall, achieving the highest values across all datasets—0.92 for duc 2002, 0.78 for duc 2003, and 0.91 for duc 2005—demonstrating its effectiveness in preserving essential content. additionally, it attains the highest bleu score of 0.29 on duc 2002, outperforming alternative methods, which range between 0.15 and 0.21. the f1 scores are also among the highest, peaking at 0.51 on duc 2002, reflecting a well-balanced trade-off between precision and recall. however, while our approach excels in recall and f1 score, methods such as cso and glo achieve slightly comparable precision values, particularly in duc 2003. this suggests that although our model retrieves a larger proportion of relevant sentences, further refinement may help reduce redundancy. moreover, the computational complexity of coa warrants further investigation compared to other optimization techniques. despite these considerations, the findings confirm that the proposed method significantly improves summarization performance, positioning it as a competitive alternative to existing stateof-the-art approaches. 5. conclusion the development of automated text summarization algorithms is crucial for efficiently extracting key information from large textual datasets, addressing the challenge of information overload in the digital era. this study introduces a systematic approach to single-document summarization by transforming words into vector representations and leveraging tf-itf to assess sentence importance. the summarization process is further optimized using the coati optimization algorithm (coa), which fine-tunes hyperparameters to enhance sentence ranking. experimental results on benchmark datasets, including duc 2002, 2003, and 2005, demonstrate that the coa-based approach outperforms state-of-the-art optimization techniques such as pso, cso, gwo, bco, qabc, mcso, and glo, achieving higher recall and f-score values. by effectively refining sentence selection and improving vectorization, coa contributes to generating more informative and coherent summaries. the key contributions of this study include the integration of tf-itf with coa for enhanced sentence ranking, a comprehensive comparative analysis with multiple optimization techniques, and the optimization of hyperparameters to improve summarization performance. future work will focus on extending this approach to multi-document summarization and exploring deep learning-based hybrid models to further enhance summary quality. references [1] w. kryściński, n. s. keskar, b. mccann, c. xiong and r. socher, "neural text summarization: a critical evaluation", arxiv preprint, arxiv:1908.08960, 2019. [2] j. weston, "a neural attention model for abstractive sentence summarization", arxiv preprint, arxiv:1509.00685, 2015. [3] l. liu, y. lu, m. yang, q. qu, j. zhu and h. li, "generative adversarial network for abstractive text summarization", in proceedings of the aaai conference on artificial intelligence, vol. 32, no. 1, apr. 2018, pp. 1-3. [4] d. miller, "leveraging bert for extractive text summarization on lectures", arxiv preprint, arxiv:1906.04165, 2019. [5] k. sarkar, "automatic single document text summarization using key concepts in documents", j. inf. process. syst., vol. 9, no. 4, pp. 602-620, 2013. 550 j. rautaray, s. panigrahi, a. k. nayak [6] h. christian, m. p. agus and d. suhartono, "single document automatic text summarization using term frequency-inverse document frequency (tf-idf)", comtech: comput. math. eng. appl., vol. 7, no. 4, pp. 285-294, 2016. [7] r. z. al-abdallah and a. t. al-taani, "arabic single-document text summarization using particle swarm optimization algorithm", procedia comput. sci., vol. 117, pp. 30-37, 2017. [8] u. rani and k. bidhan, "review paper on automatic text summarization", int. res. j. eng. technol. (irjet), vol. 7, no. 4, pp. 3349-3354, 2020. [9] a. a. syed, f. l. gaol and t. matsuo, "a survey of the state-of-the-art models in neural abstractive text summarization", ieee access, vol. 9, pp. 13248-13265, 2021. [10] s. sivakumar and r. rajalakshmi, "context-aware sentiment analysis with attention-enhanced features from bidirectional transformers", soc. netw. anal. min., vol. 12, no. 1, p. 104, 2022. [11] r. srivastava, p. singh, k. p. s. rana and v. kumar, "a topic modeled unsupervised approach to single document extractive text summarization", knowl.-based syst., vol. 246, p. 108636, 2022. [12] p. verma, a. verma and s. pal, "an approach for extractive text summarization using fuzzy evolutionary and clustering algorithms", appl. soft comput., vol. 120, p. 108670, 2022. [13] d. v. p. kumar, s. s. raj, p. verma and s. pal, "extractive text summarization using meta-heuristic approach", in fire (working notes), pp. 464-474, 2022. [14] j. cheng and m. lapata, "neural summarization by extracting sentences and words", arxiv preprint, arxiv:1603.07252, 2016. [15] w. kryściński, b. mccann, c. xiong and r. socher, "evaluating the factual consistency of abstractive text summarization", arxiv preprint, arxiv:1910.12840, 2019. [16] d. debnath, r. das and p. pakray, "extractive single document summarization using an archive-based micro genetic-2", in proceedings of the 7th international conference on soft computing & machine intelligence (iscmi), 2020, pp. 244-248. [17] t. bezdan et al., "hybrid fruit-fly optimization algorithm with k-means for text document clustering", mathematics, vol. 9, no. 16, p. 1929, 2021. [18] d. debnath, r. das and p. pakray, "single document text summarization addressed with a cat swarm optimization approach", appl. intell., vol. 53, no. 10, pp. 12268-12287, 2023. [19] s. p. patil and r. rautray, "smats: single and multi automatic text summarization", karbala int. j. modern sci., vol. 9, no. 1, p. 6, 2023. [20] k. svore, l. vanderwende and c. burges, "enhancing single-document summarization by combining ranknet and third-party sources", in proceedings of the joint conference on empirical methods in natural language processing and computational natural language learning (emnlp-conll), 2007, pp. 448-457. [21] s. mandal, g. k. singh and a. pal, "single document text summarization technique using optimal combination of cuckoo search algorithm, sentence scoring and sentiment score", int. j. inf. technol., vol. 13, no. 5, pp. 1805-1813, 2021. [22] a. jain, d. yadav and a. arora, "particle swarm optimization for punjabi text summarization", int. j. oper. res. inf. syst. (ijoris), vol. 12, no. 3, pp. 1-17, 2021. [23] s. h. apandi, j. sallim, r. mohamed and n. ahmad, "data pre-processing of website browsing records: to prepare quality dataset for web page classification", joiv: int. j. inf. visual., vol. 8, no. 1, pp. 239-246, 2024. [24] m. jaiswal and s. das, "detecting spam e-mails using stop word tf-idf and stemming algorithm with naïve bayes classifier on the multicore gpu", int. j. electr. comput. eng., vol. 11, no. 4, pp. 3168-3175, 2021. [25] k. k. mohbey and s. tiwari, "preprocessing and morphological analysis in text mining", int. j. electron. commun. comput. eng., vol. 2, no. 2, pp. 116-122, 2011. [26] z. gou, z. huo, y. liu and y. yang, "a method for constructing supervised topic model based on term frequency-inverse topic frequency", symmetry, vol. 11, no. 12, p. 1486, 2019. [27] a. k. singh and m. shashi, "vectorization of text documents for identifying unifiable news articles", int. j. adv. comput. sci. appl., vol. 10, no. 7, pp. 305-310, 2019. [28] m. dehghani, z. montazeri, e. trojovská and p. trojovský, "coati optimization algorithm: a new bioinspired metaheuristic algorithm for solving optimization problems", knowl.-based syst., vol. 259, p. 110011, 2023. [29] v. dalal and l. malik, "semantic graph-based automatic text summarization for hindi documents using particle swarm optimization", in information and communication technology for intelligent systems, springer, pp. 284-289, 2018. improving extractive text summarization via efficient coati algorithm for single document 551 [30] n. saini, s. saha, a. jangra and p. bhattacharyya, "extractive single document summarization using multi-objective optimization: exploring self-organized differential evolution, grey wolf optimizer and water cycle algorithm", knowl.-based syst., vol. 164, pp. 45-67, 2019. [31] j. rautaray et al., "seqabc: revolutionizing single document extractive text summarization with quick artificial bee colony", nanotechnol. percept., pp. 737-750, 2024. [32] m. mendoza, c. cobos and e. león, "extractive single-document summarization based on global-best harmony search and a greedy local optimizer", in advances in artificial intelligence and its applications, springer, pp. 52-66, 2015. [33] h. zhang, p. s. yu and j. zhang, "a systematic survey of text summarization: from statistical methods to large language models", arxiv preprint, arxiv:2406.11289, 2024. [34] d. yadav, j. desai and a. k. yadav, "automatic text summarization methods: a comprehensive review", arxiv preprint, arxiv:2204.01849, mar. 2022. [35] s. mirjalili, s. m. mirjalili and a. lewis, "grey wolf optimizer", adv. eng. soft., vol. 69, pp. 46-61, 2014. [36] d. karaboga and b. basturk, "a powerful and efficient algorithm for numerical function optimization: artificial bee colony (abc) algorithm", j. glob. optim., vol. 39, no. 3, pp. 459-471, 2007. [37] g. wang, s. deb and l. zhao, "a multi-colony multi-objective particle swarm optimizer for dynamic optimization problems", eng. appl. artif. intell., vol. 62, pp. 3-15, 2017. [38] s. sharma, a. verma and p. k. shukla, "a novel glowworm swarm optimization algorithm for text document summarization", expert syst. appl., vol. 160, p. 113653, 2020. [39] x. yuan, y. xu, l. gao and y. zhang, "a quick artificial bee colony algorithm for large-scale numerical optimization", appl. soft comput., vol. 48, pp. 579-596, 2016. facta universitatis series: electronics and energetics vol. 33, no 4, december 2020, pp. 631 653 https://doi.org/10.2298/fuee2004631a elham amouee1, morteza mohammadi zanjireh1 , mahdi bahaghighat1, mohsen ghorbani2 received april 15, 2020; received in revised form august 10, 2020 corresponding author: morteza mohammadi zanjireh computer engineering department, imam khomeini international university, qazvin, iran e-mail: zanjireh@eng.ikiu.ac.ir facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications tomislav suligoj1, marko koričić1, josip žilak1, hidenori mochizuki2, so-ichi morita2, katsumi shinomura2, hisaya imai2 1university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 9, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) a new anomalous text detection approach using unsupervised methods 1computer engineering department imam khomeini international university qazvin, iran 2department of electrical engineering raja university qazvin, iran abstract. increasing size of text data in databases requires appropriate classification and analysis in order to acquire knowledge and improve the quality of decision-making in organizations. the process of discovering the hidden patterns in the data set, called data mining, requires access to quality data in order to receive a valid response from the system. detecting and removing anomalous data is one of the pre-processing steps and cleaning data in this process. methods for anomalous data detection are generally classified into three groups including supervised, semi-supervised, and unsupervised. this research tried to offer an unsupervised approach for spotting the anomalous data in text collections. in the proposed method, a combination of two approaches (i.e., clustering-based and distance-based) is used for detecting anomaly in the text data. in order to evaluate the effciency of the proposed approach, this method is applied on four labeled data sets. the accuracy of naïve bayes classification algorithms and decision tree are compared before and after removal of anomalous data with the proposed method and some other methods such as density-based spatial clustering of applications with noise (dbscan). our proposed method shows that accuracy of more than 92.39% can be achieved. in general, the results revealed that in most cases the proposed method has a good performance. key words: anomaly detection, text mining, unsupervised learning, clustering, pre-processing, dbscan algorithm. © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd 2 proposed method shows that accuracy of more than 92.39% can be achieved. in general, the results revealed that in most cases the proposed method has a good performance. keywords: anomaly detection, text mining, unsupervised learning, clustering, pre-processing, dbscan algorithm 1 introduction the current age is called information age. since the organizations and institutions record a huge amount of data daily, data recovery alone is not enough to make decisions. so automatic classification and analysis of data is very important. data mining is the process of identifying valid patterns and relationships among the high volume of data which have so far been unknown [1]. intelligent data exploring helps organizations to discover and predict system behaviors, and patterns to make better and faster decisions. besides, the machine learning (ml) is the science that deals with the development of algorithms and statistical models. in machine learning, the goal is to enable computer systems to perform particular tasks without using explicit instruction and merely using patterns and inference instead of being able to perform their functions. nowadays, this science is wildly used in broad fields such as image processing, machine vision, audio signal processing, natural language processing (nlp), communication networks, financial areas, and so on [2–10]. in many topics of data mining, the data is classified into structured, semistructured, and unstructured [11]. data mining and machine learning are strong tools to handle all of these problems. structured data is that which has a predictable and regular format such as the structure of the tables in relational databases. in contrast, unstructured data is that which does not a specific structure and its analysis is not so easy. the significant growth and diversity of text data can be considered as an example of this data type. volume and speed of unstructured data are several times more than those of structured type. therefore, one of the applied areas in data mining is the concept of text mining and natural language processing (nlp). before starting data mining, some steps should be taken in order to prepare data. the steps for data mining include selecting data, initial cleaning and pre-processing, discovering patterns, and interpreting and displaying them. diagnosis of anomalous data can be considered as a pre-processing step in the data mining path [12]. anomaly is a pattern that differs from the other patterns existing in the 632 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 633 2 proposed method shows that accuracy of more than 92.39% can be achieved. in general, the results revealed that in most cases the proposed method has a good performance. keywords: anomaly detection, text mining, unsupervised learning, clustering, pre-processing, dbscan algorithm 1 introduction the current age is called information age. since the organizations and institutions record a huge amount of data daily, data recovery alone is not enough to make decisions. so automatic classification and analysis of data is very important. data mining is the process of identifying valid patterns and relationships among the high volume of data which have so far been unknown [1]. intelligent data exploring helps organizations to discover and predict system behaviors, and patterns to make better and faster decisions. besides, the machine learning (ml) is the science that deals with the development of algorithms and statistical models. in machine learning, the goal is to enable computer systems to perform particular tasks without using explicit instruction and merely using patterns and inference instead of being able to perform their functions. nowadays, this science is wildly used in broad fields such as image processing, machine vision, audio signal processing, natural language processing (nlp), communication networks, financial areas, and so on [2–10]. in many topics of data mining, the data is classified into structured, semistructured, and unstructured [11]. data mining and machine learning are strong tools to handle all of these problems. structured data is that which has a predictable and regular format such as the structure of the tables in relational databases. in contrast, unstructured data is that which does not a specific structure and its analysis is not so easy. the significant growth and diversity of text data can be considered as an example of this data type. volume and speed of unstructured data are several times more than those of structured type. therefore, one of the applied areas in data mining is the concept of text mining and natural language processing (nlp). before starting data mining, some steps should be taken in order to prepare data. the steps for data mining include selecting data, initial cleaning and pre-processing, discovering patterns, and interpreting and displaying them. diagnosis of anomalous data can be considered as a pre-processing step in the data mining path [12]. anomaly is a pattern that differs from the other patterns existing in the anew anomalous text detection approach using unsupervised methods ...3 data set. anomaly was first defined by grubbs (1969): anomaly is data which dramatically deviates from other available samples in the series [13]. the term ‘anomaly in text data’ is referred to texts which are abnormal or are significantly different from the other texts in terms of concept. in the text data, anomaly can be investigated in terms of a difference in the text author, the subject, the genre, the style of text, and the emotional tone of the text [14]. the main reason for the development of text mining systems is the increasing volume of textual data in organizations and businesses. one of the challenges in monitoring infectious diseases, such as covid-19, is that large volumes of textual data are produced continuously. in a pandemic, this value can be far greater than a human being can process [15, 16]. among the applications of this field, the following can be mentioned [17,18] • 1. diagnosis of anomalies in safety reports sent from space stations • 2. tracing the subject of news • 3. abnormal in web content • 4. identify significant patterns in annual financial reports • 5. identify abnormal data in news reports • 6. discover knowledge of medical records there are several anomaly detection systems. these systems are comprised of three parts. the first phase is the pre-processing step which includes removing unwanted words through stemming [19]. in the second phase, text display (e.g., displaying text sentences for vector) is carried out. and the third phase includes text processing for detecting anomalies and comparing between documents. anomaly detection is not an easy challenge. so far researchers developed many anomaly detection methods using statistical methods, machine learning, and data mining but the problem is still open and in its progress. several approaches are shown in the following figure 1: the methods of anomaly detection are widespread, and each is used based on input data type and its application. in one approach, the methods are classified based on access to the labelled data. accordingly, the methods are categorized into three main categories [20]: 1. supervised anomaly detection 632 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 633 4 fig. 1: the key components of anomaly detection methods [12] 2. semi-supervised anomaly detection 3. unsupervised anomaly detection in the supervised method, both normal and abnormal data are labeled in the training dataset. typical approach in such a method is to create a predictive model for both normal and abnormal data. after comparing each test data sample with the model, it is determined to which class this data belongs [12]. in the semi-supervised method, it is supposed that only normal samples are labelled. since this method does not require anomalous data labelling, this method is more applicable than the supervised method [11]. in comparison, the methods which are run based on unsupervised method do not require the training data; so, they are more applicable than the two previous approaches. the most important advantage of this method is that it does not need to access the labelled data. usually, this group of methods is known as clustering solutions [11]. in the figure 2, a summary of a set of supervised and unsupervised anomaly detection methods is shown. text clustering refers to the process of dividing a text group into similar subgroups based on content. semantic clustering refers to cluster texts based 634 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 635 4 fig. 1: the key components of anomaly detection methods [12] 2. semi-supervised anomaly detection 3. unsupervised anomaly detection in the supervised method, both normal and abnormal data are labeled in the training dataset. typical approach in such a method is to create a predictive model for both normal and abnormal data. after comparing each test data sample with the model, it is determined to which class this data belongs [12]. in the semi-supervised method, it is supposed that only normal samples are labelled. since this method does not require anomalous data labelling, this method is more applicable than the supervised method [11]. in comparison, the methods which are run based on unsupervised method do not require the training data; so, they are more applicable than the two previous approaches. the most important advantage of this method is that it does not need to access the labelled data. usually, this group of methods is known as clustering solutions [11]. in the figure 2, a summary of a set of supervised and unsupervised anomaly detection methods is shown. text clustering refers to the process of dividing a text group into similar subgroups based on content. semantic clustering refers to cluster texts based anew anomalous text detection approach using unsupervised methods ...5 fig. 2: various categories of anomalous data detection methods: the supervised and unsupervised approaches [20], [11]. i: the assumption of these methods is that the normal data belong to at least one cluster while the anomalous data do not belong to any cluster [11]. ii: in this method, the normal instance locates near the centroid of its nearest cluster, while the anomalous sample is in a long distance of the nearest cluster gravity center. iii: normal data belongs to high density clusters while anomalous data is distributed in low density clusters. on their contents or meaning [21,22]. the remainder of this paper is organized as follows. in section 2, we review some related works. in section 3, we present the methodology of our proposed method. the simulations and experimental results of the proposed algorithm are presented in section 4. finally, in section 5, we conclude the paper. 634 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 635 6 2 related works there are many studies in the research literature that try to address the anomaly detection issues. consequently, different algorithms are provided to diagnose anomaly in multidimensional data sets. the key methods used in this area include the distance-based approach, the density-based approach, and their subset methods [23]. many researchers have worked to detect anomalies in textual documents. hence, different aspects of text attributes are considered. a number of researchers changed the text to numbers and used algorithms that are suitable for numerical data. others chose a limited number of documents, such as document titles, to detect anomalies and find a pattern for the dataset [24]. in [25], the authors used the conceptual graph method in order to identify anomalous data in the text. two-way graph that includes two different types of nodes (i.e., concepts and relations). this method differs from classical statistical approaches and distance-based approaches. in this approach, a data deviation is identified based on the concept of regularity. using a conceptual graph and the relationships between the entities (concepts), the template pattern is identified, and patterns differing from those that are rare are deemed as an anomaly [25]. sumithiradevi et al. used clustering methods for anomalous data detection. initially using the greedy method, they improved the k-means algorithm and clustered the data set. then, all records were read, and a flag with the initial value of zero was attributed to them. later on, one sample was considered as outlier and removed them from the data set. in the next step, the amount of entropy changes in the remaining set was calculated. if the entropy of the remaining set increases by removing data, the deleted data is anomaly, and the value of its flag is changed to one [26]. juntao wang et al. made use of the density-based approach in order to remove anomalous data. first, by clustering approach of fast k-means, they classified data sets. then, for each data in the cluster, the degree of anomaly was calculated, and any data whose anomalous degree is much larger than one is removed from the data set. in the next step, the average of the remaining set of a cluster is selected as the new center gravity of the cluster. this trend continues until converging the clusters so that all of the anomalous data is removed from the data set [27]. in [28], the authors applied a similar method to the local outlier factor (lof) algorithm in order to determine the degree of anomaly based on distance from centroid. in the first step, by improving the k-means algorithm using genetic algorithm, data set 636 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 637 6 2 related works there are many studies in the research literature that try to address the anomaly detection issues. consequently, different algorithms are provided to diagnose anomaly in multidimensional data sets. the key methods used in this area include the distance-based approach, the density-based approach, and their subset methods [23]. many researchers have worked to detect anomalies in textual documents. hence, different aspects of text attributes are considered. a number of researchers changed the text to numbers and used algorithms that are suitable for numerical data. others chose a limited number of documents, such as document titles, to detect anomalies and find a pattern for the dataset [24]. in [25], the authors used the conceptual graph method in order to identify anomalous data in the text. two-way graph that includes two different types of nodes (i.e., concepts and relations). this method differs from classical statistical approaches and distance-based approaches. in this approach, a data deviation is identified based on the concept of regularity. using a conceptual graph and the relationships between the entities (concepts), the template pattern is identified, and patterns differing from those that are rare are deemed as an anomaly [25]. sumithiradevi et al. used clustering methods for anomalous data detection. initially using the greedy method, they improved the k-means algorithm and clustered the data set. then, all records were read, and a flag with the initial value of zero was attributed to them. later on, one sample was considered as outlier and removed them from the data set. in the next step, the amount of entropy changes in the remaining set was calculated. if the entropy of the remaining set increases by removing data, the deleted data is anomaly, and the value of its flag is changed to one [26]. juntao wang et al. made use of the density-based approach in order to remove anomalous data. first, by clustering approach of fast k-means, they classified data sets. then, for each data in the cluster, the degree of anomaly was calculated, and any data whose anomalous degree is much larger than one is removed from the data set. in the next step, the average of the remaining set of a cluster is selected as the new center gravity of the cluster. this trend continues until converging the clusters so that all of the anomalous data is removed from the data set [27]. in [28], the authors applied a similar method to the local outlier factor (lof) algorithm in order to determine the degree of anomaly based on distance from centroid. in the first step, by improving the k-means algorithm using genetic algorithm, data set anew anomalous text detection approach using unsupervised methods ...7 is clustered. in the next step, the data set is filtered, and by defining the threshold limit, the data items whose degree of anomaly is more than a specific value is considered as anomalous data. in this method, for each vector a degree of anomaly is determined based on the distance from the centroid of the cluster. lei et al. using the subtractive clustering algorithm estimated the potential of each data to be as the initial seeds according to the neighborhood’s radius of samples. in the next step, by combining the silhouette index with the k-means algorithm, they improved the estimated number of clusters. the silhouette index is a criterion for measuring the amount of the desirability of the data assignment to the cluster. this means that each data is closer to the samples in its cluster or to data from other clusters. if the number obtained is closer to one, the assignment of data to the cluster is desirable but if the number is closer to 0.5, this means that it is likely that data belongs to another cluster. finally, the improved cluster-based localoutlier factor (cblof) algorithm is used to identify anomalous data [29]. in [30], the authors put their work on the basis of the improvement of the kmeans algorithm clustering and established their method in parallel. firstly, using principal component analysis (pca), they decreased dimensions of the problem. then, by applying the dd algorithm [31], they improved kmeans’ performance. this algorithm selects initial seeds according to the method of distribution of data and improves their choice quality. also, instead of using a certain point as the initial seeds, it uses the average value of some points as the centroid of the cluster. through a number of tests, yin et al. were able to define a threshold in order to determine the number of clusters in the k-means algorithm clustering so that there is no need for it to be determined by the user [30]. identifying items or events that do not match the expected patterns or other items in the data set is called an anomaly detection. these anomalies items cause problems such as structural defects, errors, credit card fraud, and a cyber-attack and etc. the ability to detect anomaly behavior can provide very useful insights into various industries and be an important key to solving these problems. machine learning algorithms make processing faster and more efficient for detecting anomalies. these algorithms can learn from data and predictions based on that data. in [32], they examined the issue of discovering emerging relations from news using machine learning. these relations can help with news-related tasks, such as retrieving the news, discovering events, ranking, and more, which is a challenging task. in this research, a novel heterogeneous graph embedding framework for emerging relation detection (heer) 636 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 637 8 and a global graph perspective was presented. heer can embed words and entities by learning from the heterogeneous textual graph and the knowledge graph and predicts the emerging relations via a positive and unlabeled learning (pu) classifier. in [33], the authors presented a kernel-based ensemble clustering approach and used a prototype reduction scheme to decrease the time required to generate the ensemble members. they showed that the reduction method could improve the results. the method they used was a learning process for documents clustering that correspondence-based aggregation in conjunction with kernel clustering on a matrix constructed using density-biased prototype selection. 3 proposed method similar to other existing studies such as [32–35], we deal with numerical data in this research. a combination of clustering-based and distance-based methods was used by us. at the first, it is required to convert text data into an understandable format for the system. to this end, text documents were converted into vectors. anomalous data is detected in two phases. in the first phase, the k-means algorithm is used for clustering of data items in the k clusters. in the second phase, anomalous data in each cluster is detected based on the similarity comparison of each data item with the document of the centroid of the cluster. in clustering phase, probably some clusters of empty values might be created, and/or one of the anomalous data items is selected as the initial seeds and forming a cluster. therefore, the clustering stage is carried out several times in order to get a more desirable result. in the step after clustering, centroid of each cluster is considered as the representative of that cluster and since the text data is displayed in the vector space, using the cosine similarity (cs) formula, the angle between the data within the cluster is compared to its center. it should be compared with the threshold limit. if the similarity rate is less than the threshold, the data is considered as an anomaly. it should be noted that the number of abnormal data is negligible in comparison with the total data in the set. in this approach, the method of k-means algorithm clustering was used to divide data set to a few smaller parts based on the criterion of cosine similarity which will result in a decrease in the number of comparison of documents. in other words, instead of calculating distance (similarity) of each and every document in the whole set of data, we first divide the set according to the most similar documents in the k-means algorithm clustering so that the number of comparison between documents within each cluster with the cluster centroid 638 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 639 8 and a global graph perspective was presented. heer can embed words and entities by learning from the heterogeneous textual graph and the knowledge graph and predicts the emerging relations via a positive and unlabeled learning (pu) classifier. in [33], the authors presented a kernel-based ensemble clustering approach and used a prototype reduction scheme to decrease the time required to generate the ensemble members. they showed that the reduction method could improve the results. the method they used was a learning process for documents clustering that correspondence-based aggregation in conjunction with kernel clustering on a matrix constructed using density-biased prototype selection. 3 proposed method similar to other existing studies such as [32–35], we deal with numerical data in this research. a combination of clustering-based and distance-based methods was used by us. at the first, it is required to convert text data into an understandable format for the system. to this end, text documents were converted into vectors. anomalous data is detected in two phases. in the first phase, the k-means algorithm is used for clustering of data items in the k clusters. in the second phase, anomalous data in each cluster is detected based on the similarity comparison of each data item with the document of the centroid of the cluster. in clustering phase, probably some clusters of empty values might be created, and/or one of the anomalous data items is selected as the initial seeds and forming a cluster. therefore, the clustering stage is carried out several times in order to get a more desirable result. in the step after clustering, centroid of each cluster is considered as the representative of that cluster and since the text data is displayed in the vector space, using the cosine similarity (cs) formula, the angle between the data within the cluster is compared to its center. it should be compared with the threshold limit. if the similarity rate is less than the threshold, the data is considered as an anomaly. it should be noted that the number of abnormal data is negligible in comparison with the total data in the set. in this approach, the method of k-means algorithm clustering was used to divide data set to a few smaller parts based on the criterion of cosine similarity which will result in a decrease in the number of comparison of documents. in other words, instead of calculating distance (similarity) of each and every document in the whole set of data, we first divide the set according to the most similar documents in the k-means algorithm clustering so that the number of comparison between documents within each cluster with the cluster centroid anew anomalous text detection approach using unsupervised methods ...9 will be fewer. to cluster text data and to determine their similarity rate, the bag of words approach and cosine similarity were used, respectively. in order to identify anomalous data in each cluster, we are looking for data items that differ from the behavioral pattern of other members or their differences from the cluster centroid is much. after the clustering phase, the weight of each cluster will be calculated using the following formula: w(k) = n∑ x=1 sx (1) where, k is the cluster number (k = 1, 2, . . . , n) and given that the text attributes are moved to the vector, sx is the level of similarity of each data to the cluster centroid. in the next step, the average similarity of documents in each cluster is calculated by the following formula: m(k) = n∑ x=1 sx/tn (2) thus, the total amount of document similarity relative to the centroid in each cluster is divided by the total number of documents tn, and a numeric value is obtained as the average similarity of documents in each cluster. in the next step, the maximum and minimum amount of similarity in each cluster is calculated based on the following formulas: s(k−max) = max(s1, s2, ..., sn) (3) s(k−min) = min(s1, s2, ..., sn) (4) avg(k) = (sk−max + sk−min)/2 (5) diff(k) = m(k) −avg(k) (6) finally, the threshold limit of similarity is obtained for each cluster by this formula: threshold(k) = ∣∣diff(k) ∣∣ (7) the similarity of each data item in the cluster is compared to the centroid with the threshold value. if the similarity rate of the document to the 638 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 639 10 centroid is less than the threshold, it is considered as outlier in the cluster. as it was determined, to calculate the threshold limit, the difference between the median values of similarity and the average of similarities was used. since the average of each cluster is obtained by dividing the sum of the values by the number of them, the existence of anomaly in the cluster leads to exceeding of standard deviation from the average value and increases the variance. as a result, mean similarity value of documents alone cannot be a good indicator of threshold limit. therefor, the median amount of similarities, that is, the average of the similarity values of the most similar and most different documents are also entered into the threshold formula and its difference from the average values of the similarity will result in modulating the threshold limit. the pseudo-code of proposed algorithm is shown as below: algorithm 1 the proposed algorithm require: input ⇒ data set d = {d1, d2.....dn}, where n is the number of documents (k the number of clusters) ensure: output⇒ a set of k-clusters without outliers require: choose k objects from d as initial cluster centers repeat 1. calculate distance of each data instances to centroid using cs 2. reassign objects to the cluster with the most similarity 3. update the cluster centroid due to the cs until until no changes calculate the weight based center wk repeat 1. calculate the mean cs as m(k) 2. calculate the max(s1, s2, ..., sn) and min(s1, s2, ..., sn) 3. calculate the threshold limit of similarity for each cluster if dn < d(k) then delete dn from cluster k end if until end of clusters 640 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 641 10 centroid is less than the threshold, it is considered as outlier in the cluster. as it was determined, to calculate the threshold limit, the difference between the median values of similarity and the average of similarities was used. since the average of each cluster is obtained by dividing the sum of the values by the number of them, the existence of anomaly in the cluster leads to exceeding of standard deviation from the average value and increases the variance. as a result, mean similarity value of documents alone cannot be a good indicator of threshold limit. therefor, the median amount of similarities, that is, the average of the similarity values of the most similar and most different documents are also entered into the threshold formula and its difference from the average values of the similarity will result in modulating the threshold limit. the pseudo-code of proposed algorithm is shown as below: algorithm 1 the proposed algorithm require: input ⇒ data set d = {d1, d2.....dn}, where n is the number of documents (k the number of clusters) ensure: output⇒ a set of k-clusters without outliers require: choose k objects from d as initial cluster centers repeat 1. calculate distance of each data instances to centroid using cs 2. reassign objects to the cluster with the most similarity 3. update the cluster centroid due to the cs until until no changes calculate the weight based center wk repeat 1. calculate the mean cs as m(k) 2. calculate the max(s1, s2, ..., sn) and min(s1, s2, ..., sn) 3. calculate the threshold limit of similarity for each cluster if dn < d(k) then delete dn from cluster k end if until end of clusters anew anomalous text detection approach using unsupervised methods ...11 3.1 data set in this study, two data sets (i.e., bbc and bbc sports news) were used [35]. bbc news contains 2225 documents from news articles on the bbc website in five news groups between 2004 and 2005. these five news groups were labeled under the title of business, entertainment, politics, sport, and tech. the bbc sports collection also contains 737 documents from the bbc sports website articles in five sports areas between 2004 and 2005, labeled as athletics, cricket, football, rugby, and tennis. each news data set contains a large number of text files from the broadcasted news text in several newsgroups with different topics on the bbc website. since news topics differ in these texts, the words used in the text will also vary according to the type of news. according to the news genre, similar words are used in political news which are not used in sports news. consequently, the words used in the sports news genre is similar, but it differs from the words of the business news genre. as a result, the similarity or difference of documents is characterized after conversion to the vector space. documents in the sports news genre is placed in the same category at the clustering time. if business news documents are placed in this cluster, they are considered as outliers. the purpose of this approach is to find irrelevant documents that should be placed in a different cluster with regard to their subject. to identify anomaly, the algorithm is performed on the text data set with and without pre-processing. the goal of pre-processing of texts is stemming, removing of stop words, and weighing by term frequency–inverse document frequency (tf-idf) method. table 1 shows the details of the bbc data sets. table 1: summarization of the data sets dataset descriptions documents class labels classes bbc news news articles from bbc 2225 5 business, entertainment, politics, sport, tech bbc sports sports news articles from bbc 737 5 athletics, cricket, football, rugby, tennis 3.2 text pre-processing the implementation of various operations on the text, including classification and clustering, requires the conversion of it into an understandable format for the system. as mentioned earlier, text documents are of an unstructured data type, and to perform the calculations it is necessary to convert them to a structured way. stemming: the stemming process will convert words to their root form. for 640 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 641 12 example, the words ‘apply,’ ‘applied,’ and ‘application’ have the same root and they are all converted to the word ‘apply’ [36]. stop words removal: in this step, a batch of worthless words like conjunctions and prepositions that are repeated alternately and do not have certain semantic meaning are deleted [37]. bag-of-words model: it is a simple demonstration of text documents that are used in natural language processing. in this model, each document is displayed regardless of grammar and how words are shown, but the number of words’ repetition matters. the result obtained from this model, will be a word-document matrix in which every row represents each document and every column represents each word. if there is a word in the document, in the corresponding column in the matrix 1 will be inserted otherwise 0 will be inserted. the first reference to ”bag-of-words model” in a linguistic context can be found in zellig harris’s article on distributional structure [38]. in this study, to display the texts of the bag-of-words model and conversion to the vector space model were used. vector space model is an algebraic model for displaying text documents in the vector space. weighing words by tf-idf: in this method, words are assigned a weight based on its frequency in the text relative to their frequency in other texts. this weighing system shows how important a word is for a document. the first form of term weighting is due to hans peter luhn (1957) which may be summarized as [39]: the weight of a term that occurs in a document is simply proportional to the term frequency. idf was introduced by karen spärck jones as ”term specificity” in [40, 41]. although it has worked well as a heuristic, many researchers trying to find information theoretic justifications for it [41]. this criterion is made up of two functions of the tf (term frequency function) and idf (inverse document frequency function), and that means that if the number of repetitions of a specific word in the document is more and in other documents under investigation is less, this word is very important. this criterion is derived from the multiplication of two values (i.e., tf * idf). tf equals the number of word repeats divided by the total number of words contained in the document [42,43]. tf − idft.d = tft.d × idft (8) tf t,d = { log(1 + ft,d), iff t,d > 0 0, otherwise (9) 642 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 643 12 example, the words ‘apply,’ ‘applied,’ and ‘application’ have the same root and they are all converted to the word ‘apply’ [36]. stop words removal: in this step, a batch of worthless words like conjunctions and prepositions that are repeated alternately and do not have certain semantic meaning are deleted [37]. bag-of-words model: it is a simple demonstration of text documents that are used in natural language processing. in this model, each document is displayed regardless of grammar and how words are shown, but the number of words’ repetition matters. the result obtained from this model, will be a word-document matrix in which every row represents each document and every column represents each word. if there is a word in the document, in the corresponding column in the matrix 1 will be inserted otherwise 0 will be inserted. the first reference to ”bag-of-words model” in a linguistic context can be found in zellig harris’s article on distributional structure [38]. in this study, to display the texts of the bag-of-words model and conversion to the vector space model were used. vector space model is an algebraic model for displaying text documents in the vector space. weighing words by tf-idf: in this method, words are assigned a weight based on its frequency in the text relative to their frequency in other texts. this weighing system shows how important a word is for a document. the first form of term weighting is due to hans peter luhn (1957) which may be summarized as [39]: the weight of a term that occurs in a document is simply proportional to the term frequency. idf was introduced by karen spärck jones as ”term specificity” in [40, 41]. although it has worked well as a heuristic, many researchers trying to find information theoretic justifications for it [41]. this criterion is made up of two functions of the tf (term frequency function) and idf (inverse document frequency function), and that means that if the number of repetitions of a specific word in the document is more and in other documents under investigation is less, this word is very important. this criterion is derived from the multiplication of two values (i.e., tf * idf). tf equals the number of word repeats divided by the total number of words contained in the document [42,43]. tf − idft.d = tft.d × idft (8) tf t,d = { log(1 + ft,d), iff t,d > 0 0, otherwise (9) anew anomalous text detection approach using unsupervised methods ...13 where t is the term, d is a bag of words (a document in ir terms), and ft,d is a frequency of the term in a bag. tft.d = ft.d max(ft′.d : t′ ∈ d) (10) idf is the logarithm of the total number of documents divided by the total number of documents containing the target word [44]. idf t,d = log |d| |d ∈ d : t ∈ d| = log n df t (11) where n is the cardinality of a corpus d (the total number of classes) and the denominator df t is a number of bags where the term t appears. idft = log n dft (12) then, tf ∗ idf weight value for a term t in the bag d of a corpus d is defined as: tf ∗ idf(t, d,d) = tf t,d × idf t,d (13) tf ∗ idf(t, d,d) = log(1 + ft,d)× log n df t , forft,d > 0 (14) for all cases where ft,d > 0 and dft > 0, or zero otherwise. once all frequency values are computed, term frequency matrix becomes the term weight matrix, whose columns used as class’ term weight vectors that facilitate the classification using cosine similarity. in accordance with the equation, the less the number of word repetition in the documents containing the target word, the more important. 3.3 criterion for assessing the similarity of two documents the cosine similarity is the similarity criterion between the two vectors that calculates the cosine of the angle between the two vectors. a zero cosine is equal to 1, as a result, if two vectors coincide each other, their similarity is equal to one. it is obvious that this amount will show the highest possible similarity between vectors [45]. after preparing the words bag, the document will be displayed in the vector space. then, the angle between the two vectors (the similarity of two documents) is calculated from the following formula: 642 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 643 14 for two vectors a and b cosine similarity is based on their inner product and defined as: similarity(a, b) = cos(θ) (15) cos(θ) = a · b ||a|| · ||b|| (16) a · b = n∑ i=1 aibi (17) ||a|| , ||b|| = √√√√ n∑ i=1 a2i , √√√√ n∑ i=1 b2i (18) similarity(a, b) = n∑ i=1 aibi √ n∑ i=1 a2i √ n∑ i=1 b2i (19) 4 experimental results in the following, the results of using the proposed approach in order to identify the abnormal data in the text will be investigated. to implement and evaluate the proposed approach, the following procedures are implemented: to evaluate the accuracy of the proposed approach, the data set is first divided into two parts. a part of data is considered as training data and other part as test data to measure the accuracy of the proposed algorithm. also, in order to weigh the text keywords, the tf-idf coefficient was used. since five news genres exists in the data set, the number of clusters in the k-means algorithm is pre-determined and is equal to five. since the used data set is labeled, the training data is used in order to learn k-means algorithm. then, the number of documents placed in each cluster will be counted. by appointing a two-dimensional array, the index of each document with a cosine similarity relative to the centroid of each cluster (distance criterion) is stored in the array. according to the proposed formula in order to determine the threshold limit, the lowest and highest similarity values in each cluster relative to the centroid as well as the average spacing values are calculated. in the following, the results of the accuracy of decision tree classification 644 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 645 14 for two vectors a and b cosine similarity is based on their inner product and defined as: similarity(a, b) = cos(θ) (15) cos(θ) = a · b ||a|| · ||b|| (16) a · b = n∑ i=1 aibi (17) ||a|| , ||b|| = √√√√ n∑ i=1 a2i , √√√√ n∑ i=1 b2i (18) similarity(a, b) = n∑ i=1 aibi √ n∑ i=1 a2i √ n∑ i=1 b2i (19) 4 experimental results in the following, the results of using the proposed approach in order to identify the abnormal data in the text will be investigated. to implement and evaluate the proposed approach, the following procedures are implemented: to evaluate the accuracy of the proposed approach, the data set is first divided into two parts. a part of data is considered as training data and other part as test data to measure the accuracy of the proposed algorithm. also, in order to weigh the text keywords, the tf-idf coefficient was used. since five news genres exists in the data set, the number of clusters in the k-means algorithm is pre-determined and is equal to five. since the used data set is labeled, the training data is used in order to learn k-means algorithm. then, the number of documents placed in each cluster will be counted. by appointing a two-dimensional array, the index of each document with a cosine similarity relative to the centroid of each cluster (distance criterion) is stored in the array. according to the proposed formula in order to determine the threshold limit, the lowest and highest similarity values in each cluster relative to the centroid as well as the average spacing values are calculated. in the following, the results of the accuracy of decision tree classification anew anomalous text detection approach using unsupervised methods ...15 algorithms and näıve bayes method on two data sets before and after preprocessing by removing the anomalous data by the proposed method and the dbscan method was presented with different neighborhood distances. fig. 3: accuracy diagram of the decision tree after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the bbc data set the results in figures 3, and 4 showed that the proposed method on the bbc data set before the pre-processing phase was not improved in comparison with the accuracy of näıve bayes method, but the accuracy of the decision tree using the proposed method increased in comparison with the dbscan method. the results in figures 5, and 6 proved that the accuracy of the proposed method like previous results on a pre-processed set of bbc has been improved compared to the non-pre-processed set so that the accuracy of the näıve bayes method after eliminating the anomalous data by the proposed method increased compared to the dbscan method. also, the accuracy of decision tree after eliminating the anomalous data by the proposed method has increased on the pre-processed data set. the results in figures 7, and 8 disclosed that the proposed method on the bbc sports data set before the pre-processing phase in comparison with the accuracy of the näıve bayes method was not improved, but the accuracy of decision tree after removal of the anomalous data using the proposed method increased in comparison with the dbscan method. 644 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 645 16 fig. 4: accuracy diagram of the näıve bayes algorithm after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the bbc data set fig. 5: accuracy diagram of the decision tree after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the pre-processed bbc data set the results in figures 9, and 10 revealed that the accuracy of the proposed method like previous results on a pre-processed set of bbc sports 646 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 647 16 fig. 4: accuracy diagram of the näıve bayes algorithm after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the bbc data set fig. 5: accuracy diagram of the decision tree after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the pre-processed bbc data set the results in figures 9, and 10 revealed that the accuracy of the proposed method like previous results on a pre-processed set of bbc sports anew anomalous text detection approach using unsupervised methods ...17 fig. 6: accuracy diagram of the näıve bayes algorithm after removing the anomalous data using the proposed method and the dbscan method with different neighborhood distance on the pre-processed bbc data set fig. 7: accuracy diagram of the decision tree after removing the anomalous data using the proposed method and dbscan method with different neighborhood distance on the sports data set 646 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 647 18 fig. 8: accuracy diagram of the näıve bayes algorithm after removing the anomalous data using the proposed method and dbscan method with different neighborhood distances on the bbc sport data set fig. 9: accuracy diagram of the decision tree after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the pre-processed bbc sport data set news has been improved compared to the non-pre-processed set so that the accuracy of the näıve bayes method after eliminating the anomalous data by 648 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 649 18 fig. 8: accuracy diagram of the näıve bayes algorithm after removing the anomalous data using the proposed method and dbscan method with different neighborhood distances on the bbc sport data set fig. 9: accuracy diagram of the decision tree after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the pre-processed bbc sport data set news has been improved compared to the non-pre-processed set so that the accuracy of the näıve bayes method after eliminating the anomalous data by anew anomalous text detection approach using unsupervised methods ...19 fig. 10: accuracy diagram of the näıve bayes algorithm after removing the anomalous data using the proposed method and dbscan with different neighborhood distance on the pre-processed bbc data set the proposed method increased compared to the dbscan method. also, the accuracy of decision tree after removal of the anomalous data by the proposed method increased on the pre-processed data set. table 2, compares two similar works with our proposed method on the same data set. table 2: results on the bbc news data set authors descriptions accuracy zhang et al. heterogeneous graph embedding for emerging relation detection from news 64.4% greene et al. kernel-based ensemble clustering approach 88.0% our proposed method a combination of two approaches (clustering-based and distance-based) 92.39% 5 conclusion and future works in this research, a novel approach for identifying the anomalous text data using unsupervised methods was proposed well. the advantage of using our proposed model as an unsupervised method is that there is no need for prior knowledge and training data. in this research, we assumed that the number 648 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 649 20 of anomalous data is negligible compared to normal data. the documents studied were also in english and the cosine similarity (cs) criterion was used to compare the distance between the documents. therefore, a given document which is the least similar to others is considered as an anomalous document. in the proposed method, a combination of two approaches clustering-based and distance-based is used for detecting anomaly in the text data. in order to evaluate the efficiency of the proposed approach, this method is applied on four labeled data sets. in general, the obtained results show that the classification accuracy of the documents after applying the anomalous outlier detection algorithm and removing them from the preprocessed data set is always improved and performs well in non-pre-processed data sets. in order to determine the threshold, our model iteratively runs some algorithms with high mathematical calculation. consequently computational complexity increases in our approach. besides, it should be noted that the user must specify k (the number of clusters) at the beginning. so an improved k-means would be used as a solution. we have to repeat the k-means algorithm several times to fix the best clustering and prevent the selection of outliers as initial seeds. furthermore, we should point out that based on the achieved results the pre-processing step can affect the accuracy. in the future, we are going to use improved k-means algorithm, evaluate other types of clustering algorithms, apply the model to other languages, investigate different distance thresholds (similarity) to tackle these issues. references [1] z. a. bakar, r. mohemad, a. ahmad, and m. m. deris, “a comparative study for outlier detection techniques in data mining,” in 2006 ieee conference on cybernetics and intelligent systems. ieee, 2006, pp. 1–6. [2] a. esmaeili kelishomi, a. garmabaki, m. bahaghighat, and j. dong, “mobile user indoor-outdoor detection through physical daily activities,” sensors, vol. 19, no. 3, p. 511, 2019. [3] m. ghorbani, m. bahaghighat, q. xin, and f. özen, “convlstmconv network: a deep learning approach for sentiment analysis in cloud computing,” journal of cloud computing, vol. 9, no. 1, pp. 1–12, 2020. [4] m. bahaghighat, l. akbari, and q. xin, “a machine learning-based approach for counting blister cards within drug packages,” ieee access, vol. 7, pp. 83 785–83 796, 2019. 650 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 651 20 of anomalous data is negligible compared to normal data. the documents studied were also in english and the cosine similarity (cs) criterion was used to compare the distance between the documents. therefore, a given document which is the least similar to others is considered as an anomalous document. in the proposed method, a combination of two approaches clustering-based and distance-based is used for detecting anomaly in the text data. in order to evaluate the efficiency of the proposed approach, this method is applied on four labeled data sets. in general, the obtained results show that the classification accuracy of the documents after applying the anomalous outlier detection algorithm and removing them from the preprocessed data set is always improved and performs well in non-pre-processed data sets. in order to determine the threshold, our model iteratively runs some algorithms with high mathematical calculation. consequently computational complexity increases in our approach. besides, it should be noted that the user must specify k (the number of clusters) at the beginning. so an improved k-means would be used as a solution. we have to repeat the k-means algorithm several times to fix the best clustering and prevent the selection of outliers as initial seeds. furthermore, we should point out that based on the achieved results the pre-processing step can affect the accuracy. in the future, we are going to use improved k-means algorithm, evaluate other types of clustering algorithms, apply the model to other languages, investigate different distance thresholds (similarity) to tackle these issues. references [1] z. a. bakar, r. mohemad, a. ahmad, and m. m. deris, “a comparative study for outlier detection techniques in data mining,” in 2006 ieee conference on cybernetics and intelligent systems. ieee, 2006, pp. 1–6. [2] a. esmaeili kelishomi, a. garmabaki, m. bahaghighat, and j. dong, “mobile user indoor-outdoor detection through physical daily activities,” sensors, vol. 19, no. 3, p. 511, 2019. [3] m. ghorbani, m. bahaghighat, q. xin, and f. özen, “convlstmconv network: a deep learning approach for sentiment analysis in cloud computing,” journal of cloud computing, vol. 9, no. 1, pp. 1–12, 2020. [4] m. bahaghighat, l. akbari, and q. xin, “a machine learning-based approach for counting blister cards within drug packages,” ieee access, vol. 7, pp. 83 785–83 796, 2019. anew anomalous text detection approach using unsupervised methods ...21 [5] m. bahaghighat, s. a. motamedi, and q. xin, “image transmission over cognitive radio networks for smart grid applications,” applied sciences, vol. 9, no. 24, p. 5498, 2019. [6] f. abedini, m. bahaghighat, and m. s’hoyan, “wind turbine tower detection using feature descriptors and deep learning,” facta universitatis, series: electronics and energetics, vol. 33, no. 1, pp. 133–153, 2019. [7] m. bahaghighat, f. abedini, m. s’hoyan, and a.-j. molnar, “vision inspection of bottle caps in drink factories using convolutional neural networks,” in 2019 ieee 15th international conference on intelligent computer communication and processing (iccp). ieee, 2019, pp. 381–385. [8] s. hasani, m. bahaghighat, and m. mirfatahia, “the mediating effect of the brand on the relationship between social network marketing and consumer behavior,” acta technica napocensis, vol. 60, no. 2, pp. 1–6, 2019. [9] m. bahaghighat, q. xin, s. a. motamedi, m. m. zanjireh, and a. vacavant, “estimation of wind turbine angular velocity remotely found on video mining and convolutional neural network,” applied sciences, vol. 10, no. 10, p. 3544, 2020. [10] m. bahaghighat and s. a. motamedi, “vision inspection and monitoring of wind turbine farms in emerging smart grids,” facta universitatis-series: electronics and energetics, vol. 31, no. 2, pp. 287–301, 2018. [11] v. chandola, a. banerjee, and v. kumar, “anomaly detection: a survey,” acm computing surveys (csur), vol. 41, no. 3, pp. 1–58, 2009. [12] j. d. parmar and j. t. patel, “anomaly detection in data mining: a review,” international journal, vol. 7, no. 4, 2017. [13] r. kaur and s. singh, “a survey of data mining and social network analysis based anomaly detection techniques,” egyptian informatics journal, vol. 17, no. 2, pp. 199–216, 2016. [14] d. guthrie, “unsupervised detection of anomalous text,” ph.d. dissertation, citeseer, 2008. [15] j. samuel, g. ali, m. rahman, e. esawi, y. samuel et al., “covid-19 public sentiment insights and machine learning for tweets classification,” information, vol. 11, no. 6, p. 314, 2020. [16] s. latif, m. usman, s. manzoor, w. iqbal, j. qadir, g. tyson, i. castro, a. razi, m. n. k. boulos, a. weller et al., “leveraging data science to combat covid-19: a comprehensive review,” 2020. [17] a. hotho, a. nürnberger, and g. paaß, “a brief survey of text mining.” in ldv forum, vol. 20, no. 1. citeseer, 2005, pp. 19–62. [18] a. k. nassirtoussi, s. aghabozorgi, t. y. wah, and d. c. l. ngo, “text mining for market prediction: a systematic review,” expert systems with applications, vol. 41, no. 16, pp. 7653–7670, 2014. 650 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 651 22 [19] a. mahapatra, n. srivastava, and j. srivastava, “contextual anomaly detection in text data,” algorithms, vol. 5, no. 4, pp. 469–489, 2012. [20] m. goldstein and s. uchida, “a comparative evaluation of unsupervised anomaly detection algorithms for multivariate data,” plos one, vol. 11, no. 4, p. e0152173, 2016. [21] t.-e. lin, h. xu, and h. zhang, “discovering new intents via constrained deep adaptive clustering with cluster refinement.” in aaai, 2020, pp. 8360–8367. [22] i. aalto et al., “discovering topics in slack message streams,” 2020. [23] r. kannan, h. woo, c. c. aggarwal, and h. park, “outlier detection for text data,” in proceedings of the 2017 siam international conference on data mining. siam, 2017, pp. 489–497. [24] m. t. sereshki and m. m. zanjireh, “outlier detection in text data: an unsupervised method based on text similarity and density peak,” 2020. [25] m. montes-y gómez, a. gelbukh, and a. lópez-lópez, “detecting deviations in text collections: an approach using conceptual graphs,” in mexican international conference on artificial intelligence. springer, 2002, pp. 176–184. [26] s. chellamuthu and m. punithavalli, “enhanced k-means with greedy algorithm for outlier detection,” international journal of advanced research in computer science, vol. 3, no. 3, 2012. [27] j. wang and x. su, “an improved k-means clustering algorithm,” in 2011 ieee 3rd international conference on communication software and networks. ieee, 2011, pp. 44–46. [28] m. marghny and a. i. taloba, “outlier detection using improved genetic kmeans,” arxiv preprint arxiv:1402.6859, 2014. [29] d. lei, q. zhu, j. chen, h. lin, and p. yang, “automatic k-means clustering algorithm for outlier detection,” in information engineering and applications. springer, 2012, pp. 363–372. [30] c. yin and s. zhang, “parallel implementing improved k-means applied for image retrieval and anomaly detection,” multimedia tools and applications, vol. 76, no. 16, pp. 16 911–16 927, 2017. [31] x.-j. tong, f.-r. meng, and z.-x. wang, “optimization to k-means initial cluster centers,” computer engineering and design, vol. 32, no. 8, pp. 2721– 2723, 2011. [32] j. zhang, c.-t. lu, m. zhou, s. xie, y. chang, and s. y. philip, “heer: heterogeneous graph embedding for emerging relation detection from news,” in 2016 ieee international conference on big data (big data). ieee, 2016, pp. 803–812. [33] d. greene and p. cunningham, “efficient ensemble methods for document clustering,” department of computer science, trinity college dublin, tech. rep., 2006. 652 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 653 22 [19] a. mahapatra, n. srivastava, and j. srivastava, “contextual anomaly detection in text data,” algorithms, vol. 5, no. 4, pp. 469–489, 2012. [20] m. goldstein and s. uchida, “a comparative evaluation of unsupervised anomaly detection algorithms for multivariate data,” plos one, vol. 11, no. 4, p. e0152173, 2016. [21] t.-e. lin, h. xu, and h. zhang, “discovering new intents via constrained deep adaptive clustering with cluster refinement.” in aaai, 2020, pp. 8360–8367. [22] i. aalto et al., “discovering topics in slack message streams,” 2020. [23] r. kannan, h. woo, c. c. aggarwal, and h. park, “outlier detection for text data,” in proceedings of the 2017 siam international conference on data mining. siam, 2017, pp. 489–497. [24] m. t. sereshki and m. m. zanjireh, “outlier detection in text data: an unsupervised method based on text similarity and density peak,” 2020. [25] m. montes-y gómez, a. gelbukh, and a. lópez-lópez, “detecting deviations in text collections: an approach using conceptual graphs,” in mexican international conference on artificial intelligence. springer, 2002, pp. 176–184. [26] s. chellamuthu and m. punithavalli, “enhanced k-means with greedy algorithm for outlier detection,” international journal of advanced research in computer science, vol. 3, no. 3, 2012. [27] j. wang and x. su, “an improved k-means clustering algorithm,” in 2011 ieee 3rd international conference on communication software and networks. ieee, 2011, pp. 44–46. [28] m. marghny and a. i. taloba, “outlier detection using improved genetic kmeans,” arxiv preprint arxiv:1402.6859, 2014. [29] d. lei, q. zhu, j. chen, h. lin, and p. yang, “automatic k-means clustering algorithm for outlier detection,” in information engineering and applications. springer, 2012, pp. 363–372. [30] c. yin and s. zhang, “parallel implementing improved k-means applied for image retrieval and anomaly detection,” multimedia tools and applications, vol. 76, no. 16, pp. 16 911–16 927, 2017. [31] x.-j. tong, f.-r. meng, and z.-x. wang, “optimization to k-means initial cluster centers,” computer engineering and design, vol. 32, no. 8, pp. 2721– 2723, 2011. [32] j. zhang, c.-t. lu, m. zhou, s. xie, y. chang, and s. y. philip, “heer: heterogeneous graph embedding for emerging relation detection from news,” in 2016 ieee international conference on big data (big data). ieee, 2016, pp. 803–812. [33] d. greene and p. cunningham, “efficient ensemble methods for document clustering,” department of computer science, trinity college dublin, tech. rep., 2006. anew anomalous text detection approach using unsupervised methods ...23 [34] j. manoharan, s. h. ganesh, and j. sathiaseelan, “outlier detection using enhanced k-means clustering algorithm and weight-based center approach,” int. j. comput. sci. mobile comput., vol. 5, no. 4, pp. 453–464, 2016. [35] d. greene and p. cunningham, “practical solutions to the problem of diagonal dominance in kernel document clustering,” in proc. 23rd international conference on machine learning (icml’06). acm press, 2006, pp. 377–384. [36] f. n. flores and v. p. moreira, “assessing the impact of stemming accuracy on information retrieval–a multilingual perspective,” information processing & management, vol. 52, no. 5, pp. 840–854, 2016. [37] w. j. wilbur and k. sirotkin, “the automatic identification of stop words,” journal of information science, vol. 18, no. 1, pp. 45–55, 1992. [38] z. s. harris, “distributional structure,” word, vol. 10, no. 2-3, pp. 146–162, 1954. [39] h. p. luhn, “a statistical approach to mechanized encoding and searching of literary information,” ibm journal of research and development, vol. 1, no. 4, pp. 309–317, 1957. [40] k. s. jones, “a statistical interpretation of term specificity and its application in retrieval,” journal of documentation, 1972. [41] s. robertson, “understanding inverse document frequency: on theoretical arguments for idf,” journal of documentation, 2004. [42] g. salton and c. buckley, “term-weighting approaches in automatic text retrieval,” information processing & management, vol. 24, no. 5, pp. 513–523, 1988. [43] c. d. manning, p. raghavan, and h. schütze, “scoring, term weighting and the vector space model,” introduction to information retrieval, vol. 100, pp. 2–4, 2008. [44] k. church and w. gale, “inverse document frequency (idf): a measure of deviations from poisson,” in natural language processing using very large corpora. springer, 1999, pp. 283–295. [45] a. huang, “similarity measures for text document clustering,” in proceedings of the sixth new zealand computer science research student conference (nzcsrsc2008), christchurch, new zealand, vol. 4, 2008, pp. 9–56. 652 e. amouee, m. m. zanjireh , m. bahaghighat, m. ghorbani a new anomalous text detection approach using unsupervised methods... 653 instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 465 476 doi: 10.2298/fuee1503465j mtj-based hybrid storage cells for “normally-off and instant-on” computing  bojan jovanović 1 , raphael m. brum 2 , lionel torres 2 1 university of niš, faculty of electronic engineering, niš, serbia 2 lirmm laboratory, university of montpellier 2, montpellier, france abstract. besides increasing a computing throughput, multi-core processor architectures bring increased capacity of sram-based cache memory. as a result, cache memory now occupies large proportion of recent processor chips, becoming a major source of the leakage power consumption. the power gating technique applied on a sram cache is not efficient since it is paid by data loss. in this paper, we present two hybrid memory cells that combine a conventional volatile cmos part with magnetic tunnel junctions (mtjs) able to store a data bit in a non-volatile way. being inherently nonvolatile, these hybrid cells enable instantaneous power off and thus complete reduction of the leakage power. moreover, given that the data bit can be stored in local mtjs and not in distant storage memories, these cells also offer instantaneous and efficient data retrieval. to demonstrate their functionality, the cells are designed using 28 nm fd-soi technology for the cmos part and 45 nm round spin transfer torque mtjs (stt-mtjs) with perpendicular magnetization anisotropy. we report the measured performances of the cells in terms of required silicon area, robustness, read/write speed and energy consumption. key words: hybrid mtj/cmos cells, magnetic tunnel junction (mtj), spin transfer torque (stt), normally-off instant-on computing 1. introduction conventional von-neumann computing architectures consist of a pure computational part (central processor unit cpu) and a memory part in which the computing recipes (programs) and the input/output data of the calculations are stored [1]. such complex systems have a memory hierarchy comprising different semiconductor memory types, as illustrated in fig. 1. dense, slow and non-volatile storage memory with limited endurance is combined with fast, volatile, power and area consuming sram/dram working memory (located close to the cpu) in order to ensure both rapid accessibility and data non-volatility. however, this sort of design hierarchy requires complex control. start-up (booting) and shutdown procedures usually take a long time and waste a significant amount of power since received january 20, 2015; received in revised form march 16, 2015 corresponding author: bojan jovanović university of niš, faculty of electronic engineering, niš, serbia (e-mail: bojan@elfak.ni.ac.rs) 466 b. jovanović, r. m. brum, l. torres they imply extensive data traffic (from storage memories to working memories and viceversa). in recent years, both the limited clock frequency of the processor and the emergence of multi-core architectures led to a significant increase in working memory capacity. as a result, the performance and the power of the computing system became determined by working, sram-based, memory. it occupies most of the chip area, consumes most of the static power and is prone to soft errors caused by radiation [2]. replacing conventional sixtransistor (6t) sram cells with four-transistors (4t) counterparts did not solve all these issues. although they occupy slightly less silicon area, 4t-sram memory cells consume more leakage power and exhibit poor data stability. furthermore, 4t-sram cells still limit system performance as they require complex control and communication with the nonvolatile storage elements [3]. fig. 1 typical structure of a computer memory hierarchy. to circumvent these limitations, non-volatility needs to be brought directly to the working memory cell. this would pave the way for new green computing paradigm based on “normally-off and instant-on” operation. computing equipment could be quickly turned-off when not in use, keeping the off state with zero stand-by power as long as possible. on the computing request, the equipment could be turned on instantly, with the full performance capabilities. such computing approach may be far more energy efficient compared with the current “normally-on” computing systems [4]. among the non-volatile devices that are prospective candidates for co-integration with cmos, spin-based magnetic tunnel junctions (mtjs) are the most promising [5]. unlike the other candidates in which the position of atoms (e.g. ferroelectric ram feram [6]) or the whole structure (e.g. phase change memory pcm [7]) have to be changed to define a nonvolatile state, spin-based mtjs are controlled only by electron spin [8]. in addition to energy efficiency (little energy is needed to change the electron spin), mtjs provide radiation immunity, high speed data switching, higher density, infinite endurance as well as the ability to continue shrinking in size [9]. moreover, they can be very easily co-integrated with the cmos without imposing the area overhead, as illustrated in fig. 2a). in this paper, we present two hybrid cells that combine cmos transistors with perpendicular spin-transfer torque mtjs (stt-mtjs) as non-volatile storage elements. the cells can be considered as hybrid alternatives for the mainstream 4tand 6t-sram cells. they can store a data bit in both volatile and non-volatile contexts. furthermore, the cells are mtj-based hybrid storage cells for "normally-off and instant-on" computing 467 able to quickly and efficiently transfer a data bit from one context to another, thus supporting the "normally-off and instant-on" computing concept. the remainder of the paper is organized as follows: in section 2, we analyze the evolution of the mtj writing mechanisms. in section 3, we introduce our hybrid cells that contain four-transistors and two-mtjs (4t-2m) and six-transistors and four-mtjs (6t4m), explaining their structure and functionality. in section 4, we report the measured performance of the cells in terms of required silicon area, robustness, leakage, read/write speeds and energy consumption. finally, section 5 is reserved for our conclusions. 2. evolution of mtj writing mechanisms an mtj is a nanopillar composed of an ultra thin layer of insulator (oxide barrier) sandwiched between two ferromagnetic (fm) metals (fig. 2a). the insulating layer is so thin that electrons can tunnel through the barrier if a bias voltage is applied between two fm electrodes. the resistance of mtj depends on the relative orientation of the magnetization in the two fm layers. in standard applications, the magnetization of one fm layer (the reference layer) is commonly pinned, whereas the other (storage) layer is free to take a parallel (p) or an anti-parallel (ap) orientation, thus determining parallel (rp) or anti-parallel (rap) mtj resistance and storing a binary state. the relative difference between these two resistances defines the tunnel magneto-resistance (tmr) ratio, ∆r/r=(rap-rp)/rp. in recent decades, much research effort has been invested in improving the tmr ratio of mtjs to make them more attractive for integration with cmos. today, commercial mtjs that use mgo oxide barriers have a tmr of about 200% [10], whereas some laboratory prototypes can have a tmr of up to 1000% [11]. the mechanism for switching between two mtj states (i.e. writing non-volatile data) is also an important research field that influences the area, speed and power performances of hybrid mtj/cmos circuits. early field-induced magnetic switching (fims) required writing currents in the order of a few milliamperes and thus very large driving transistors and write lines that penalized the die area of hybrid circuits [12]. thermally assisted switching (tas) has undergone improvement in terms of bit selectivity and writing efficiency. prior to switching, mtj stack is heated above the blocking temperature of the free layer. afterward, the state of the mtj is completely controlled by the external magnetic field [13]. however, due to the required heating and cooling latencies, tas-mtjs exhibit low switching speeds (about 20ns [14]), meaning they are not efficient enough for use in "normally-off and instant-on" computing systems. recent current induced magnetic switching (cims) methods use the spin-transfer torque (stt) effect proposed by berger [15] and slonczewski [16]. this enables magnetization of the free layer to be switched with only one, low, spin-polarized bidirectional current passing through the mtj stack, as illustrated in fig. 2b) and 2c). if the density of the spin-polarized writing current is greater than the critical current density (jco), mtj resistance is determined only by the direction of the current. 468 b. jovanović, r. m. brum, l. torres fig. 2 a) cmos-mtj co-integration; b) in-plane stt mtj writing; c) perpendicular stt mtj writing. mature and commercialized stt-mtjs with in-plane magnetization have very fast mtj switching speeds (up to 100 ps, according to [17]). however, with the writing currents of hundreds of micro amperes, this switching approach is still not efficient since it consumes a lot of energy and requires large driving transistors. furthermore, it suffers from reliability issues including data thermal stability, erroneous write by read current and short retention times [18]. high error rate of reading circuits is an additional obstacle. emerging perpendicular stt-mtj structures in which the magnetization direction is perpendicular to the film plane have proved to be the breakthrough technology that enables a significant reduction in the switching current required (several tens of microampers) as well as improvements in data thermal stability. perpendicular stt-mtjs are slightly slower than their in-plane counterparts. however, both their energy efficiency and their reported switching speeds of few ns [19], which are comparable with the write speeds of advanced sram cells, make them appropriate for the use in "normally-off and instant-on" computing systems [17, 19]. in the following section, we present two hybrid cells that combine perpendicular stt-mtjs as non-volatile storage elements with cmos transistors used to store a volatile data bit. 3. hybrid (mtj/cmos) memory cells here described memory cells are based on hybrid (volatile/non-volatile) cross-coupled inverters. they have perpendicular stt-mtjs “embedded” within a cmos part which makes them suitable to replace sram-based volatile memory cells or flip-flops located near the processor‟s arithmetic logic unit (alu). the unique feature of these cells is that while cpu is in active state, they behave as a conventional cmos-based flip-flop or sram memory cells with the very high speed of operation (> 2 ghz). while cpu is in mtj-based hybrid storage cells for "normally-off and instant-on" computing 469 stand-by state, data are stored in mtjs and zero stand-by power is achieved by the power gating. after power supply returns, the cell itself operates as a sense amplifier automatically restoring the data saved in mtjs into the sram or flip-flop. this enables the processor core to quickly become ready to start arithmetic operation. furthermore, such cells allow run-time saving of the processors‟ context (non-volatile check-pointing), thus significantly improving the reliability of data processing. 3.1. 6t-4m hybrid cell with double non-volatile context the first hybrid cell we propose is shown in fig. 3. it has a structure similar to that of a conventional 6t-sram cell. a volatile (sram) data context consists of the crosscoupled inverters (cmos latch) used to store one data bit in its electrical, complementary form (q, !q). in addition to the cmos latch, the cell has two non-volatile (mram) contexts located in both pull-up and pull-down networks of the latch structure. each mram context contains two perpendicular stt-mtjs that, for the correct operation of the cell, must be in mutually complementary states (rp/rap or vice versa). fig. 3 6t-4m hybrid memory cell. the procedure of writing a volatile data bit is exactly the same as in the conventional sram memory cell. the volatile data bit to be written and its complementary value are connected to the bl and blb lines, respectively. after activation of the access transistors (mn3 and mn4) with the wl signal pulse, the volatile data bit is stored in the cmos latch. reading the non-volatile data bit (i.e. restoring the mram context to sram) consists of converting the physical value (resistance) stored in mtjs into its electrical equivalent which will be stored in the cmos latch. fig. 4 illustrates the reading phase of mram_2 context (mtjs in the pull-down network). to read this mram context, bl and blb lines need to be pre-charged to vdd. the reading phase begins with activation of wl signal (wl=vdd). consequently, pull-down transistors (mn1/mn2) of the cmos latch are switched on, whereas the pull-up ones (mp1/mp2) are blocked (off). in both pull-down branches of the hybrid cell, there is a current flowing from the bl/blb lines through the access transistors and nmos pull-down transistors to the ground (gnd). provided that the cell is fully symmetrical (the transistors in both branches have equal on resistances since they have the same dimensions), the voltage drops on the q and !q nodes entirely depends on the mtj resistances in the mram_2 context that are in the path of the current. furthermore, if both 470 b. jovanović, r. m. brum, l. torres the transistors and the mtjs are carefully sized, the voltages on the latch nodes q and !q can be adjusted to be one below and another above the meta-stable voltage (vmeta), depending on the non-volatile data bit stored in mram_2 context. as illustrated on the transfer curve in fig. 4a), non-volatile data bit „1‟ stored in mram_2 context (rap/rp configuration) will cause the voltage on the q node to be greater than the meta-stable voltage (vq > vmeta). the opposite will occur if mram_2 context stores non-volatile data bit „0‟ (rp/rap configuration, fig. 4b)): q and !q voltages will be below and above meta-stable voltage, respectively (vq < vmeta; v!q > vmeta). fig. 4 the phase of reading mram_2 context that stores: a) non-volatile data bit „1‟ (rap/rp); b) non-volatile data bit „0‟ (rp/rap). in both scenarios, at the end of mram reading phase when the wl signal is deactivated and the access transistors are turned off, the cmos latch converges from an unbalanced state to one of its stable states, which is strictly determined by the state (resistance) of mtjs in mram_2 context. the procedure of reading mram_1 context is the same. the only difference is that, in this case, bl and blb lines need to be pre-charged to gnd. consequently, the pull-up network is activated, the current flows in both branches from the power supply (vdd) to the bl/blb nodes (which are now on the ground potential) putting the latch in a meta-stable state. finally, when the access transistors are deactivated, the latch converges from an unbalanced state to a stable one determined by the non-volatile data bit stored in mram_1 context (mtj2 and mtj3). rp/rap configuration for mtj2/mtj3 stores non-volatile data bit „1‟ whereas the rap/rp combination is used to store non-volatile „0‟ bit. mtj-based hybrid storage cells for "normally-off and instant-on" computing 471 3.2. 4t-2m hybrid cell with single non-volatile context in order to additionally decrease required implementation area, we propose another hybrid cell with a structure similar to that of a 4t-sram loadless volatile memory cell. as shown in fig. 5, it contains two pmos access transistors (mp1 and mp2) with low threshold voltage (vth) and two cross-coupled nmos transistors (mn1 and mn2) used to store one volatile data bit. in addition, the cell has one non-volatile (mram) context located in the pull-down network. it contains two perpendicular stt-mtjs that, for the correct operation of the cell, must be in mutually complementary states (rp/rap or vice versa). fig. 5 a) the 4t-2m hybrid memory cell; b) the same cell with the stt writing interface and current generator (cg) design. the low threshold voltage of the pmos access transistors implies increased subthreshold leakage current compared to the leakage of the pull-down nmos transistors (ioffp>ioffn). this, in turn, ensures volatile data retention when the cell is on stand-by (bl,blb,wl = vdd). the procedure of writing a volatile data bit is exactly the same as in conventional 4tsram loadless memory cells whereas the restoring phase is similar to that of a previously described 6t-4m hybrid cell. fig. 5b) shows stt writing interface. in addition to the current generator (cg) that supplies the bi-directional, spin-polarized current needed to write a non-volatile data bit (d), it contains the footer transistor mn5 as well as the pass transistors mn3 and mn4. in normal cell operation, these three transistors are always switched on (wr=’0’). conversely, during the phase of writing a non-volatile data bit (wr=’1’), they cut the mtjs off from the ground rails and cross-coupled nmos transistors, ensuring that spin-polarized cg current passes through both mtjs in mutually opposite directions. the direction of the cg current is strictly determined by the non-volatile data bit to be written (d). given that in the idle state cg inverters are with the active pull-down networks (logic zero at the inverters' outputs), the volatile data bit (electrical charge) stored in nmos cross-coupled transistors could discharge through the cg. to prevent this happening, a power-gating transistor mng is used to cut-off the cg from the ground rails during its idle state. 472 b. jovanović, r. m. brum, l. torres 4. evaluation of hybrid cells before measuring the performance of the cells, we implemented them in cadence spectre using stmicroelectronics 28 nm fully depleted silicon on insulator (fd-soi) technology for the cmos part [20] and 45 nm wide, round, perpendicular stt-mtjs for the non-volatile part. however, it should be said that using soi is not essential for the proper operation of here presented hybrid cells. they could be implemented in any standard cmos technology node. thanks to the presence of buried oxide in the transistor structure, fd-soi technology has proved to be very reliable in providing high speed at low voltage [21]. for our measurements, we used a power supply of vdd=1.1v. furthermore, the buried oxide significantly reduces standby power consumption by reducing both gate induced drain leakage and junction leakage currents. in addition, the wide range back gate controllability of fd-soi structure enables optimization of both performance and power after fabrication. perpendicular stt-mtjs were co-integrated with cmos using the open source spinlib physical model [22]. the model gives the resistances of mtjs depending on its magnetic configuration (p or ap) and its bias voltage. it also defines the current thresholds required to switch between the two configurations. finally, the model takes the switching delays, including stochastic fluctuations, into account. to achieve high simulation accuracy, the model was calibrated with respect to the experimental data provided by toshiba and ibm. table 1 summarizes some of the mtj parameters that are important for co-integration with the cmos. as can be seen, required switching currents are few dozen microamperes, whereas switching current pulses are in the order of few nanoseconds. however, it is worth mentioning that the stt writing mechanism has the ability to adjust the amount of switching current and the duration of the switching pulse. increasing the former entails decreasing the latter. thus, it would be possible to speed up non-volatile writing by increasing the amount of writing current, or to make it more energy efficient by increasing the duration of the writing current pulse. with a breakdown voltage of nearly 1 v and supply voltage of 1.1 v, stt-mtjs are in a safe area of operation (we measured 484 mv of voltage across the mtj during the switching phase). table 1 main parameters of perpendicular stt-mtjs parameter description value rp/rap [kω] p/ap mtj resistance 3.14/9.4 isw [µa] switching currents p → ap ~60 ap → p ~50 tsw [ns] switching speed p → ap 4.27 ap → p 4.71 vbd [v] breakdown voltage ~1 area mtj area 45nm x 45nm ra [ωˑµm2] resistance-area product 5 tmr [%] tmr ratio 200 to ensure the area efficiency of any target application of our hybrid memory cells, they have to be as small as possible, since they may be instanced many times. that is why our first evaluation step was to find the smallest possible hybrid cell design, i.e., the smallest mtj-based hybrid storage cells for "normally-off and instant-on" computing 473 possible transistor sizes with which the cell was still operational. to this end, we used monte carlo (mc) analysis. the length of all the transistors in both cells was the smallest possible allowed by the technology (l=lmin=30 nm). we continued to vary the width (w) of the transistors as long as we obtained 0% of conversion (non-volatile reading) errors in 5000 mc runs with std = 10% variations in the length and width of all the transistors. using minimally sized hybrid cells, we continued to measure its other performances: static power consumption, the robustness of volatile data, the speed of writing the volatile data bit, the speed of restoring the non-volatile data bit as well as the dynamic energy required to restore it. the results are summarized in table 2. some measured parameters are also compared with the performances of conventional 4tand 6t-sram cells implemented in pure 28 nm fd-soi cmos technology. the total transistor area (w x l) of the hybrid cells is 2-3 times bigger than conventional, pure cmos memory cells. this increase in area is mostly due to the presence of the stt writing interface. however, given that hybrid cells can store 2-3 data bits, this difference in required silicon area can be considered as expected and acceptable. regarding leakage power, it is calculated by the help of cadence measurement description language (mdl) using the following formula: 1 0 ( ) p , t dd vdd t s v i t dt t      (1) where ivdd is the power supply current during the idle time interval δt = t1-t0. given that 4t-sram cells preserve the volatile data bit with increased leakage currents coming from lvt pmos transistors, their leakage power is significantly higher compared with 6t-sram leakage. low leakage power consumed by 4t-2m hybrid cell is due to resistive mtjs that are positioned in the path of the leakage currents (pull-down network of the cross-coupled transistors). 6t-4m hybrid cell consumes more static power simply because it contains more transistors. however, unlike conventional sram cells, our hybrid cells can store a volatile data bit into a non-volatile context, meaning the power supply can be turned off. this, in turn, completely eliminates leakage power. table 2 evaluated performance of hybrid cells 6t-sram 4t-sram 6t-4m 4t-2m w x l [µm2] 0.024 0.0144 0.0624 0.0516 leakage [nw] 0.93 5.67 3.15 1.9 mtj reading [ps]§ ctx1 33.4 92.7 ctx2 60.8 erd [fj=µw/ghz]¥ 3.94 3.17 vol. writing [ps]º 6.8 4.9 10 9.8 snm [mv]* 395 154 318 98 § the speed of reading (restoring) a non-volatile data bit stored in mtjs ¥ dynamic energy consumed during the phase of reading non-volatile data bit º the speed of writing a volatile data bit * the higher the snm, the better the robustness 474 b. jovanović, r. m. brum, l. torres to determine the speed of restoring a non-volatile data bit to volatile context, we continued to increase the width of the reading wl pulse (by using the binary search method) as long as the first correct reading operation was detected. the measured minimum reading pulse determines the maximum possible reading speed. as can be seen from table 2, nonvolatile data bit can be read in a gigahertz regime. in 6t-4m hybrid cell, non-volatile mram_1 context is faster than its mram_2 counterpart due to the fact that pull-up network in our cell is less resistive the pull-down one. 4t-2m hybrid cell is slightly slower because of the position of mtjs as well as sub-threshold working regime. this influences slow reaching of the unbalanced state. the minimum dynamic energy consumed by the hybrid cell during the phase of nonvolatile reading is listed in the middle of table 2. it was calculated by: ,)(e 1 0   t t vddddrd tpsdttiv (2) where ivdd is the power supply current during the restoration phase, δt = t1-t0 is previously determined minimum duration of the reading pulse, and ps is leakage power consumpiton of the cell. both 4t-2m and 6t-4m hybrid cells exhibit similar performance in terms of required restoration energy. to measure the speed of writing the volatile data bit, we used binary search method to determine the minimum width of the wl pulse needed to write the volatile data bit set on the bl/blb lines. the measured values are listed at the bottom of table 2. it can be seen that volatile writing speeds of all the cells are below 10 ps. the presence of the stt writing interface and resistive mtjs slightly reduce the volatile writing speeds of our hybrid cells compared to both the 4tand 6t-sram cells. hybrid cells we present here use cross-coupled inverters (6t-4m) or cross-coupled nmos transistors (4t-2m) to store the volatile data bit. the stability of this kind of structure is typically expressed in terms of its static noise margin (snm). informally, the static noise margin can be understood as the minimum voltage disturbance that could flip the volatile data stored in the memory cell. fig. 6 shows the conceptual measurement setup we used to measure snm. dc noise sources with the value vn were introduced between the gates of the nmos transistors and output q, !q nodes. using spectre mdl, we increased the noise voltage vn as long as we detect volatile data flipping. we repeated the same procedure for both possible values of the non-volatile data bit (q=1 and q=0) stored in cross-coupled nmos transistors. the measured snms (worst case) of hybrid cells are listed at the bottom of the table 2. it can be seen that 4t-2m hybrid cell is the most sensitive to voltage noise. to benefit from the dual storage facility, a significant property of the hybrid cell would be its ability to write non-volatile data bit without disturbing volatile data (q, !q). in this way, the device based on hybrid cells may profit from the run-time (on-the-fly) reconfiguration ability. during the processing of volatile data bits, some background operation may write non-volatile ones in parallel. to investigate this ability for the 6t-4m hybrid cell, we monitored the disturbance of volatile data (logic level degradation) during the non-volatile writing phase. we report logic level degradations of 92 mv and 116 mv for mram_1 and mram_2 contexts, respectively. given that logic level degradations mtj-based hybrid storage cells for "normally-off and instant-on" computing 475 are less than the snm value, we conclude that both non-volatile mram contexts of our cell can be dynamically reconfigured. fig. 6 a) static noise margin (snm) measurement setup for 6t-4m hybrid cell; b) snm measurement setup for 4t-2m hybrid cell. finally, it is worth mentioning that the above presented performance analysis is not completely exhaustive. we did not take into account the influence of the mtj process variations that become more and more critical, particularly in terms of resistance variations. moreover, we did not consider the sensitive aspects of integrating mtj electric signals to cmos electronics (reliability of nearly zero run-time error is required by the logic applications) [23, 24]. this, together with the influence of voltage and temperature variations will be included in our future work. 5. conclusion this paper presents two hybrid cells that are able to store and process one data bit both electrically and magnetically. the cells are based on 4tand 6t-sram architectures and use recently emerging perpendicular stt-mtj nanopillars as non-volatile storage elements. measured performance of both hybrid cells implemented in 28 nm fd-soi technology combined with 45 nm round stt-mtjs showed that the cells are ready to be used in "normally-off and instant-on" computing systems. the cells need less than 100 ps to restore a non-volatile data bit, spending not more than 4 fj for the operation. the volatile data bit can be written for a time bellow 10 ps. moreover, 6t-4m hybrid cell presented here has a few clear advantages compared to existing hybrid cells: two non-volatile data contexts and the ability to write a volatile data bit. the cells presented here have the potential to completely eliminate idle power consumption of a battery powered systems-on-chip. they are also suitable for non-volatile reconfigurable logic applications (non-volatile registers, processor cache, magnetic fpgas, etc). acknowledgement: this research was sponsored in part by the french national agency for scientific research (anr), through the projects dipmem and mars, as well as, by the serbian ministry of science and technological development, through the project iii-44004. references [1] j. rabaey, low power design essentials. new york: springer-verlag, 2009. [2] p. rech, j.-m. galliere, p. girard, f. wrobel, f. saigne, and l. dilillo, "impact of resistive-open defects on sram error rate induced by alpha particles and neutrons", ieee transactions on nuclear science, vol. 58, pp. 855-861, 2011. 476 b. jovanović, r. m. brum, l. torres [3] r. sandeep, n.t. deshpande, and a.r. aswatha, "design and analysis of a new loadless 4t sram cell in deep submicron cmos technologies", in proceedings of the 2nd international conference on emerging trends in engineering and technology, nagpur, 16-18 dec. 2009, pp. 155-161. [4] k. abe, s. fujita, and h. lee, "novel nonvolatile logic circuits with three-dimensionally stacked nanoscale memory device", in proceedings of nanotechnology conference, anaheim, california, 8-12 may 2005, pp. 203-206. [5] semiconductor industry association (sia). (2011) international technology roadmap for semiconductors. san jose, ca: semiconductor industry association (sia), http://www.itrs.net/. accessed march 13 20015. [6] s. james, p. arujo, and a. carlos, "ferroelectric memories", science, vol. 246, pp. 1400-1405, 1989. [7] h. wong, s. raoux, s. kim et al. "phase change memory", invited paper, in proceedings of the ieee, 2010, vol. 98, pp. 2201-2227. [8] c. chappert, a. fert, and v. dau, "the emergence of spin electronics in data storage", nature materials, vol. 6, pp. 813-823, 2007. [9] w. zhao, e. belhaire, c. chappert, and p. mazoyer, "spintronic device based non-volatile low standby power sram", in proceedings of ieee annual symposium on vlsi, montpellier, 7-9 apr. 2008, pp. 40-45. [10] s. ikeda, h. sato, m. yamanouchi, et al., "recent progress of perpendicular anisotropy magnetic tunnel junctions for non-volatile vlsi", journal of spin, vol. 2, pp. 1240003-1 124003-12, 2012. [11] t. kawahara, k. ito, r. takemara, and h. ohno, "spin-transfer torque ram technology: review and prospect", microelectronics reliability, vol. 52, pp. 613-627, 2012. [12] w. zhao, e. belhaire, c. chappert, and p. mazoyer, "power and area optimization for run-time reconfiguration sopc based on mram", ieee transactions on magnetics, vol. 45, pp. 776-780, 2009. [13] l. torres, y. guillemenet, and s. ahmed, "a dynamic reconfigurable mram-based fpga", in proceedings of international conference on engineering of reconfigurable systems and algorithms, las vegas, nevada, 12-15 jul. 2010, pp. 31-40. [14] d. suzuki, m. natsui, s. ikeda, et al., "fabrication of a nonvolatile lookup-table circuit chip using magneto/semiconductor hybrid structure for an immediate-power-up feld programmable gate array", in proceedings of ieee symposium on vlsi circuits, kyoto, 16-14 jun. 2009, pp. 80-81. [15] l. berger, "emission of spin waves by a magnetic multilayer traversed by a current", physical review b, vol. 54, pp. 9353–9358, 1996. [16] j. c. slonczewski, "current-driven excitation of magnetic multilayers", journal of magnetism and magnetic materials, vol. 1859, pp. l1–l7, 1996. [17] h. yoda, s. fujita, n. shimomura, et al., "progress of stt-mram technology and the effect on normally-off computing systems", in proceedings of ieee international electron devices meeting, san francisco, california, 10-13 dec. 2012, pp. 11.3.1 11.3.4. [18] r. takemura, t. kawahara, k. ono, k. miura, h. matsuoka, and h. ohno, "highly-scalable disruptive reading scheme for gb-scale sram and beyond", in proceedings of ieee international memory workshop, seoul, 16-19 may 2010, pp. 1-2. [19] e. kiagawa, s. fujita, k. nomura, et al. "impact of ultra low power and fast write operation of advanced perpendicular mtj on power reduction for high-performance mobile cpu", in proceedings of ieee international electron devices meeting, san francisco, california, 10-13 dec. 2012, pp. 29.4.1 29.4.4. [20] n. planes, o. weber, v. barral, et al. "28nm fdsoi technology platform for high-speed low-voltage digital applications", in proceedings of the symposium on vlsi technology, honolulu, hawai, 12-14 jun. 2012, pp. 133-134. [21] t. ishikagi, r. tsuchiya, y. morita, et al. "silicon on thin box (sotb) cmos for ultralow standby power with forward-biasing performance booster", in proceedings of the european solid-state device research conference, edinburgh, 15-19 sep. 2008, pp. 198-201. [22] y. zhang, w. zhao, y. lakys, "compact modeling of perpendicular-anisotropy cofeb/mgo magnetic tunnel junctions", ieee transactions on electron devices, vol. 59, pp. 819-826, 2012. [23] w. kang, w. zhao, e. deng et al., "a radiation hardened hybrid spintronic/cmos non-volatile unit using magnetic tunnel junctions", journal of physics d: applied physics, vol. 47, p. 405003, 2014. [24] w. kang, e. deng, j. o. klein et al., "separated pre-charge sensing amplifier for deep submicron mtj/cmos hybrid logic circuits", ieee transactions on magnetics, vol. 50, pp. 3400305-5, 2014. http://www.itrs.net/ instruction facta universitatis series: electronics and energetics vol. 30, no 3, september 2017, pp. 363 373 doi: 10.2298/fuee1703363m lte and wifi co-existence in 5 ghz unlicensed band  nenad milošević 1 , bojan dimitrijević 1 , dejan drajić 2 , zorica nikolić 1 , milorad tošić 1 1 university of nis, faculty of electronic engineering, nis, serbia 2 university of belgrade, school of electrical engineering, belgrade, serbia abstract. since the future mobile networks will require significantly higher data throughput, and the long-term evolution (lte) licensed bands are already occupied, the frequency band extension and the data rate increase may be achieved by using some of the available unlicensed bands. the most appropriate unlicensed band for this purpose lies in 5 ghz frequency range. however, this unlicensed band is already occupied by wifi networks and a special attention has to be paid to coordinate these two different networks in the shared spectrum usage. therefore, this paper considers the shared access co-existence in 5 ghz unlicensed band between uncoordinated lte and wifi networks. more precisely, it considers the influence of the lte downlink transmission on the performance of the wifi networks. the experimental results show that the lte significantly degrades the wifi network performance, which means that some of the coordination algorithms have to be employed. key words: wifi, lte, co-existence, unlicensed band, shared access 1. introduction mobile communications industry is rapidly growing over the past decade, and the mobile data transfer was almost completely based on the usage of the licensed spectrum. having in mind predictions of 1000 times cellular data traffic growth until 2020 [1], and the fact that there is an increasing amount of machine to machine data transfer [2], it is clear that the licensed band communications would have problems to support such a high bandwidth demand. one of the possible solutions to this problem use some additional spectrum out of the dedicated licensed band, while causing minimum interference to the existing systems in that frequency band. the co-existence of the mobile communication networks (global system for mobile (gsm) and long-term evolution (lte)) and digital terrestrial video broadcasting (dvb-t) systems are analyzed in [3]. the paper shows that there could be a significant mutual influence of these systems. besides, the available ultra received september 5, 2016; received in revised form december 7, 2016 corresponding author: dejan drajić university of belgrade, school of electrical engineering, belgrade, serbia (e-mail: ddrajic@etf.rs) 364 n. milosević, b.dimitrijević, d. drajić, z. nikolić, m.tošić high frequency (uhf) bandwidth is not very large. all of this indicates that uhf tv bands are not very appropriate for the mobile communication systems bandwidth increase. on the other hand, the unlicensed bands are particularly suitable for the bandwidth extension. the unlicensed band consist of industrial, scientific and medical (ism) and unlicensed national information infrastructure (u-nii) bands. ism bands occupy frequencies around 900 mhz, 2.4 ghz, and 5.8 ghz, whereas u-nii occupies frequencies from 5 to 5.8 ghz. 2.4 ghz band provides around 80 mhz of bandwidth, but it is heavily occupied by 802.11b/g wifi networks, bluetooth and other wireless personal area networks. on the other hand, 5 ghz band provides around 500 mhz of bandwidith and it is lightly occupied mainly by wifi 802.11ac/n networks. both 2.4 and 5 ghz wifi use carrier sense multiple access (csma) to access channel, and they are possible victims of some other technologies operating in the same frequency range. bluetooth use csma for data transmission and time division multiple access (tdma) for audio transmission. therefore, in case of audio transmission bluetooth may cause interference to other networks. having in mind the existing interference and the available bandwidth, 5 to 5.8 ghz band was chosen to be used for the bandwidth extension [4]. however, the implemented technology should be flexible enough to support other frequency bands. lte was first defined in 3rd generation partnership project (3gpp) release 8 [5]. it represents an evolving mobile communication standard that provides high data rates, higher capacity, smaller latency and new levels of user experience. in the 3gpp release 10 [6], lte was improved to fulfil the requirements of 4g mobile networks and it was named lte–advanced (lte-a). the most important advancement of the lte-a is the possibility of simultaneous use of multiple frequency bands by the means of the carrier aggregation (ca) technology. ca is the key technology that enables the unlicensed spectrum usage by the lte devices. however, the unlicensed spectrum would only be used for data rate increase, both in downlink and uplink, while the licensed spectrum, having predictable performance, will still be used for the important operations, such as network management, or delivery of critical information and guaranteed quality of service. although the unlicensed band may be freely used by the communication systems, there are some regulations that have to be followed, such as dynamic frequency selection (dfs) and listen-before-talking (lbt), which may use different technologies, such as carrier sense multiple access or spectrum sensing [7]. these coordination mechanisms, that are variants of dynamic spectrum access (dsa), are essential for achieving efficient co-existence between different systems that are operating in unlicensed spectrum. as the 5ghz band is primarily used by ieee 802.11ac wifi networks, the focus should be on the coordination between the lte and wifi. the main problem lies in the fact that the lte was designed to operate in a dedicated, licensed band. therefore, it does not have shared access mechanisms, like wifi does. papers [8] and [9] provide respectively simulation and theoretical results on the co-existence of lte and wifi networks and show the need for some sort of coordination between these two networks. experimental analysis of the 2.4 ghz band wifi communication influenced by lte is given in [10]. the lte is represented only by the base station, without any mobile stations. in this case, lte enb waits for the ue and transmits mainly control signals. there are two possible solutions to the problem of wifi and lte networks co-existence. the first approach is to modify the lte standard and adapt it to work in frequency shared environment. lte-u (lte-unlicensed), proposed by lte-u forum [11], uses a lte lte and wifi co-existence in 5 ghz unlicensed band 365 version with duty cycle i.e. with pauses in the transmission. in this way, wifi has the opportunity to transmit its data during the silent periods of the lte-u. besides, lte-u access point listens to wifi transmissions, tries to predict the usage patterns and to adapt to them. licensed assisted access (laa) will be a part of the future 3gpp lte release13 standard [12], [13], and includes listen before talk (lbt) mechanism to transmit when the channel is free. standardization progress and the summary of the laa is given in [14]. also, an operator level system performance is analyzed for indoor hotspot, indoor office, and outdoor small cell scenarios. the analysis showed that a significant lte capacity increase may be obtained by using laa and lbt. paper [15] considers the design of lbt for the laa system and analyzes the influence of laa clear channel assessment threshold on the performance of both lte and wifi networks. the paper shows that the proposed lbt algorithm is able to improve laa and to keep low interference to wifi. however, both lte-u and laa require significant modifications of the lte standard and will not be available in near future. the second approach is to introduce a coordinated access to the shared channel. there are two general approaches to spectrum coordination as follows [16]: reactive spectrum coordination and proactive spectrum coordination. the most straightforward reactive spectrum coordination concept is so called agile wideband radio scheme [17]. in this scheme, transmitter analyzes the spectrum and chooses its frequency band and modulation scheme, having in mind the highest allowed interference level. there is no higher-level coordination with the neighboring nodes. this coordination scheme is very simple, but has one serious possible problem with the hidden nodes, i.e. with the nodes that may not be visible to the station, but may interfere with it. another simple coordination scheme is reactive control [18]. all the radio stations in a network control its transmit power, rate, or frequency band in a way to optimize channel quality and interference levels. the name reactive comes from the fact that the station change its parameters as a reaction to the changes in the wireless environment. although these schemes are simple, with low software and hardware complexity, their application is limited to some simple scenarios. proactive spectrum coordination schemes are slightly more complex than the reactive. an example of proactive schemes is the spectrum etiquette protocol [19]. this scheme employs a distributed coordination by the means of either internet services or a separate coordination radio channel reserved for this purpose within the frequency band common to all participating radio nodes. these schemes enable radio nodes, using different radio access technologies, to coordinate its activities and adjust transmit parameters for successful joint operation. the etiquette approach is capable of operating in more complex scenarios than the reactive schemes. the common spectrum coordination channel (cscc) variant of the etiquette approach is given in [19], [20] together with the demonstration of proof-of-concept experiments for co-existing ieee 802.11b/g and bluetooth networks in the shared 2.4 ghz unlicensed band. with the coordination approach, only minor modifications of the existing standards are needed. however, the best solution would be to use coordination together with the lte-u or laa. having in mind the analyzed literature, it may be noticed that there is a lack of the experimental results for the scenario of lte and wifi networks co-existence in 5 ghz band. this paper gives the experimental data regarding the interference caused by lte towards the wifi in 5 ghz unlicensed band. unmodified versions of the existing standards are used, 802.11a for wifi, and 3gpp release-10 for lte. since there is no commercial lte 366 n. milosević, b.dimitrijević, d. drajić, z. nikolić, m.tošić hardware available that operates in any unlicensed band, we used software radio based lte implementation named openairinterface (oai) [21]. oai is also meant to be used in the licensed bands, so we had to modify source code to allow usage in 5 ghz unlicensed band. the experimentation is performed at nitos testbed [22]. the rest of the paper is organized as follows. section 2 briefly describes the openairinterface as well as the nitos testbed. the experiment description is given in section 3, while the experiment results and discussion are given in section 4. finally, the concluding remarks are presented in section 5. 2. openairinterface and nitos testbed the openairinterface lte implementation represents the full real-time software implementation of 4th generation mobile cellular systems compliant with 3gpp lte standards release-8/10. oai is implemented in gnu-c and uses x86 single instruction, multiple data (simd) hardware acceleration. it is primarily targeted for x86 real time application interface (rtai), but can be made to run on any gnu environment. oai implements both lte enb, i.e. lte base station, and lte user equipment (us), i.e. lte mobile station. it supports both frequency-division duplexing (fdd) and timedivision duplexing (tdd) configurations in 5, 10, and 20 mhz channel bandwidth. oai is designed to work with any hardware rf platform with minimal modifications. currently, two platforms are supported: eurecom exmimo2 [23], and universal software radio peripheral (usrp) xand bseries [24]. in our experiments, we used usrp b210. besides usrp, an intel core i5 or i7 based pc with usb 3.0 port is needed. the experiment will be performed at nitos testbed. nitos testbed consists of several experimentation environments: outdoor, indoor rf isolated, and office testbeds to meet different experimentation scenarios (fig. 1). users internet nitos server outdoor testbed indoor rf isolated tesbed office testbed openflow switch fig. 1 nitos testbed block diagram lte and wifi co-existence in 5 ghz unlicensed band 367 the experiments were executed at indoor rf isolated testbed because it is the only testbed currently equipped with usrp b210. it consists of 4 × 11 nodes arranged in the grid (11 rows with 4 nodes each), as shown in fig. 2. the distance between the neighboring nodes is 1 m. 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 fig. 2 indoor rf isolated testbed topology the nodes are numbered from 50 to 93 because previous 49 nodes are in outdoor and office testbeds. each node consists of a pc with different rf devices attached, such as wifi, usrp, bluetooth, and lte. after the reservation of a time slot, each node may be accessed online by the user and any software may be executed. 368 n. milosević, b.dimitrijević, d. drajić, z. nikolić, m.tošić 3. experiment setup and results 3.1. experiment description the topology of the experiment setup is shown in fig. 3. nodes 50 and 68 create an ad-hoc 802.11a wifi network. wireless network adapters are qualcomm atheros ar9580 (rev 01). due to wifi cards regulatory domain, available channels at 5 ghz frequency band are 36, 40, 44, and 48. it was chosen to use channel 48 with central frequency of 5.24 ghz. wifi adapters output power was set to 0 or 10 dbm in order to make it less than or equal to the output power of the usrp devices. the transmission control protocol (tcp) throughput between these two stations is generated and measured using iperf v2 [25] application during 60 seconds, without parallel streams. the lte enb and lte ue are run on nodes 59 and 60, respectively, using oai software. it may be noticed that the lte nodes are close to each other. that is because the oai is still in the development phase and the link quality between enb and ue is not very good. currently, the eurecom is paying the most attention to the development of oai enb in order to make it work correctly with different commercial lte devices, such as mobile phones. 50 59 62 68 69 51 52 53 54 55 56 57 58 60 61 90 91 92 93 63 64 65 66 67 wifi network lte network wifi node oai node fig. 3 the experiment setup topology the lte channel width may be configured using the number of resource blocks (nrb) parameter. possible channel widths are 1.4, 3, 5, 10, 15, 20 mhz for nrb = 6, 15, 25, 50, 75, 100. the oai is configured to work in fdd mode with 5 mhz channel bandwidth, i.e. the number of resource blocks is set to 25, because oai works the best with 5 mhz channel width.. the downlink frequency is set to be equal to the channel 48 central frequency, 5.24 ghz, and the uplink frequency offset is set to -100 mhz, i.e. the uplink frequency is 5.14 ghz. the throughput and the round-trip time (rtt) between wifi stations is constantly measured while the lte traffic is varied. again, iperf is used, now to generate user datagram protocol (udp) traffic in the downlink of the lte network. lte and wifi co-existence in 5 ghz unlicensed band 369 it should be noted that paper [8] and this paper consider a similar topic. however, the results in this paper may not be compared to those obtained in [8]. namely, paper [8] analyzes the influence of oai enb (without ues) on the wifi transmission in 2.4 ghz band. wifi stations are located at the same testbed node, with 25 cm distance between the antennas. oai enb distance to wifi was varied from 1 to 20 m. since we did not have a physical access to the nitos testbed, we could not put two wifi cards on one node. also, we could not move usrps to different nodes, and therefore could not change the distance between lte and wifi stations. 3.2. experimental results this section presents some experimental results that show the influence of lte on wifi network based on scenario described in the previous section. fig. 4 shows wifi throughput over time for different lte traffic intensity: no lte network present, only lte enb generating light load with control signals, 1 mb/s, and 10 mb/s of the downlink lte traffic. the usrp b210 output power is around 10 dbm, so wifi output power was chosen to be equal to usrp (10 dbm) and 10 db lower (0 dbm). it may be noticed that the higher the lte throughput, the lower the wifi throughput is. that is because wifi senses lte transmission and postpones its own transmission. on the other hand, lte does not use carrier sensing and it transmits continuously. wifi transmit power has almost no influence on wifi throughput (curves a, c, and d), except for the case of light lte traffic with only enb (curve b), because stronger wifi packets are more likely to reach the destination, even if they are hit by the lte signal during the transmission. 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 d c b wifi power 10 dbm wifi power 0 dbm w if i t h ro u g h p u t [m b /s ] t [s] a fig. 4 wifi throughput over time for different lte traffic intensity: a) no lte, b) only lte enb, c) 1 mb/s d) 10 mb/s besides the throughput, the transmission delay is also an important parameter of a communication network. the round-trip time, i.e. time needed for a packet to travel from source to destination and back to source, for the wifi network is shown in fig. 5. it is measured using ping application, which sends internet control message protocol (icmp) echo request 370 n. milosević, b.dimitrijević, d. drajić, z. nikolić, m.tošić packets, and waits for icmp echo response packets. the rtt is considered for different lte traffic intensity and for different icmp packet size: 100, 1000, and 10000 bytes. fig. 5 shows average value and standard deviation of the rtt. the conclusion from fig. 4 may be applied here: higher lte throughput increases both average value and the standard deviation of rtt. the average value increases significantly for 10 mb/s lte throughput. on the other hand, the rtt standard deviation increases approximately exponentially with the increase of lte throughput. no lte 0 1m 10m 0.01 0.1 1 10 100 1000 a v e ra g e r t t [ m s ] lte throughput [b/s] average value standard deviation packet size 100 bytes packet size 1000 bytes packet size 10000 bytes fig. 5 wifi network rtt as a function of lte throughput, for different values of packet size no lte 0 1m 10m 1 10 100 a v e ra g e r t t [ m s ] lte throughput [b/s] f = 0 hz f = 5 mhz f = 10 mhz c b a fig. 6 wifi network average rtt as a function of lte throughput, for different values of frequency offset between wifi and lte carrier frequency f, and wifi packet size a) 100 bytes, b) 1000 bytes, c) 10000 bytes lte and wifi co-existence in 5 ghz unlicensed band 371 finally, fig. 6 analyzes the influence of the carrier frequency offset between the wifi channel central frequency (fwifi) and the lte downlink frequency (flte) f. frequency s p ec tr u m m ag n it u d e f = 0 mhz frequency s p ec tr u m m ag n it u d e f = 5 mhz frequency s p ec tr u m m ag n it u d e f = 10 mhz a) b) c) fig. 7 mutual position of the wifi (solid line) and lte (dashed line) spectra for different carrier frequency offset a) 0 mhz, b) 5 mhz, c) 10 mhz we should have in mind that wifi occupies 20 mhz bandwidth (fwifi ± 10 mhz), and lte occupies 5 mhz (because nrb is chosen to be 25) bandwidth (flte ± 2.5 mhz), as shown in fig. 7. as can be seen from fig. 7, for 0 and 5 mhz offset, whole lte spectrum overlaps with wifi spectrum and 25% of the wifi channel is occupied by lte. note that 372 n. milosević, b.dimitrijević, d. drajić, z. nikolić, m.tošić lte carrier frequency lies within wifi channel. for 10 mhz offset, a half of the lte spectrum (2.5 mhz) overlaps with the wifi spectrum, and lte carrier frequency is on the edge, or practically out of wifi channel. the results show that the higher the offset the lower is the influence of lte on wifi network. if the offset is 10 mhz, lte has very little influence on the wifi network. figs. 6 and 7 show that the lte carrier itself is the main cause of the interference. 4. conclusion the influence of the lte on the wifi network, sharing the same 5 ghz frequency range without coordination, is considered in this paper. the results show that the higher the lte throughput, the lower the wifi throughput. the lte similarly influences the round-trip time of the wifi network packets. the influence is the highest if the lte downlink frequency is equal to the wifi channel central frequency. if the difference between these two frequencies is higher, the influence is lower. having in mind the presented results, a conclusion can be made that the coordination between the lte and wifi networks is very important and will be the topic of our future research. we are currently developing spectrum coordination based on an ontological framework. the coordination process will be centralized on one coordination server. it will communicate to wifi and lte clients and provide them all the needed parameters for the successful co-existence in a shared frequency band. acknowledgement: the authors thank the anonymous reviewers for their valuable suggestions and comments. the research leading to these results has received funding from the european union's seventh framework programme under grant agreement no 612050 (flex project) and from the european union's horizon 2020 research and innovation programme under grant agreement no. 687860 (softfire project). references [1] qualcomm, extending the benefits of lte advanced to unlicensed spectrum, http://www.qualcomm. com/media/documents/files/extending-the-benefits-of-lte-advanced-to-unlicensed-spectrum.pdf; 2014 [accessed 29.08.16]. [2] a. prijić, lj. vračar, d. vučković, d. danković, z. prijić, "practical aspects of cellular m2m systems design", facta universitatis, series: electronics and energetics, vol. 28, pp. 541-556, december 2015. [3] l. polak, o. kaller, l. klozar, j. sebesta, t. kratochvil, “mobile communication networks and digital television broadcasting systems in the same frequency bands: advanced co-existence scenarios”, radioengineering, vol. 23, pp. 375–386, april 2014. [4] 3gpp. lte in unlicensed spectrum, http://www.3gpp.org/news-events/3gpp-news/1603-lte_in_unlicensed; 2014 [accessed 129.08.16]. [5] 3gpp. 3gpp release 8, http://www.3gpp.org/specifications/releases/72-release-8; 2014 [accessed 29.08.16]. [6] 3gpp. 3gpp release 10, http://www.3gpp.org/specifications/releases/70-release-10; 2014 [accessed 29.08.16]. [7] r. deka, s. chakraborty, j. s. roy, "optimization of spectrum sensing in cognitive radio using genetic algorithm", facta universitatis, series: electronics and energetics, vol. 25, pp. 235-243, december 2012. [8] j. jeon, h. niu, qc li, a. papathanassiou, g. wu, “lte in the unlicensed spectrum: evaluating coexistence mechanisms”, in the proceedings of the ieee globecom work. gc wkshps 2014, 2014, austin, tx (usa), pp. 740–745. http://www.qualcomm.com/media/documents/files/extending-the-benefits-of-lte-advanced-to-unlicensed-spectrum.pdf http://www.qualcomm.com/media/documents/files/extending-the-benefits-of-lte-advanced-to-unlicensed-spectrum.pdf http://www.3gpp.org/news-events/3gpp-news/1603-lte_in_unlicensed http://www.3gpp.org/specifications/releases/72-release-8 http://www.3gpp.org/specifications/releases/70-release-10 lte and wifi co-existence in 5 ghz unlicensed band 373 [9] a. babaei, j. andreoli-fang, y. pang, b. hamzeh, “on the impact of lte-u on wi-fi performance”, int j wirel inf networks, vol. 22, pp. 336–344, december 2015. [10] s. sagari, s. baysting, d. saha, i. seskar, w. trappe, di. raychaudhuri, “coordinated dynamic spectrum management of lte-u and wi-fi networks”, in the proceedings of the ieee int. symp. dyn. spectr. access networks, dyspan 2015, stockholm, sweden, 2015, pp. 209–220. [11] lte-u forum, http://www.lteuforum.org; [accessed 19.08.16]. [12] 3gpp, 3gpp release 13, http://www.3gpp.org/release-13; 2015 [accessed 29.08.16]. [13] 3gpp, rp-151045: new work item on licensed-assisted access to unlicensed spectrum, http://www.3gpp.org/ftp/tsg_ran/tsg_ran/tsgr_68/docs/rp-151045.zip; 2015 [accessed 29.08.16]. [14] r. ratasuk, n. mangalvedhe, a. ghosh, “lte in unlicensed spectrum using licensed-assisted access”, in proceedings of the ieee globecom work. gc wkshps, austin, tx, usa, 2014, pp. 746–751. [15] li y, zheng j, li q, “enhanced listen-before-talk scheme for frequency reuse of licensed-assisted access using lte”, in proceedings of the ieee int. symp. pers. indoor mob. radio commun. pimrc, hong kong, china, 2015, pp. 1918–1923. [16] d. raychaudhuri, x. jing, i. seskar, k. le, jb evans, “cognitive radio technology: from distributed spectrum coordination to adaptive network collaboration”, pervasive mob comput, vol. 4, pp. 278–302, june 2007. [17] k. challapali, s. mangold, z. zhong, “spectrum agile radio: detecting spectrum opportunities”, in the proceedings of the intern. symp. adv. radio technol, boulder, co, usa, 2004, po. 61–65. [18] x. jing, sc. mau, d. raychaudhuri, r. matyas. “reactive cognitive radio algorithms for co-existence between ieee 802.11b and 802.16a networks”, in proceedings of the globecom ieee glob. telecommun. conf., st. louis, mo, usa, vol. 5, 2005, pp. 2465–2469. [19] d. raychaudhuri, x. jing, “a spectrum etiquette protocol for efficient coordination of radio devices in unlicensed bands”, in proceedings of the ieee int. symp. pers. indoor mob. radio commun. pimrc, beijing, china, vol. 1, 2003, pp. 172–176. [20] x. jing, d. raychaudhuri, “spectrum co-existence of ieee 802.11b and 802.16a networks using reactive and proactive etiquette policies”, mob networks appl, vol. 11, pp. 539–554, august 2006. [21] openairinterface software alliance, openairinterface, http://www.openairinterface.org/; 2015 [accessed 29.08.16]. [22] nitlab, nitos, http://nitos.inf.uth.gr/; [accessed 29.08.16]. [23] eurecom, expressmimo2, https://twiki.eurecom.fr/twiki/bin/view/openairinterface/expressmimo2; [accessed 29.08.16]. [24] ettus, usrp xand bseries, https://www.ettus.com/; [accessed 29.08.16]. [25] iperf, https://iperf.fr/; [accessed 29.08.16]. http://www.lteuforum.org/ http://www.3gpp.org/release-13 http://www.3gpp.org/ftp/tsg_ran/tsg_ran/tsgr_68/docs/rp-151045.zip http://www.openairinterface.org/ http://nitos.inf.uth.gr/ https://twiki.eurecom.fr/twiki/bin/view/openairinterface/expressmimo2 https://www.ettus.com/ https://iperf.fr/ instruction facta universitatis series: electronics and energetics vol. 27, no 2, june 2014, pp. 235 249 doi: 10.2298/fuee1402235s execution time – area tradeoff in gausing residual load decoder: integrated exploration of chaining based schedule and allocation in hls for hardware accelerators  anirban sengupta 1 , reza sedaghat 2 , vipul kumar mishra 1 1 computer science and engineering, indian institute of technology, indore, india 2 electrical and computer engineering, ryerson university, toronto, canada abstract. design space exploration is an indispensable segment of high level synthesis (hls) design of hardware accelerators. this paper presents a novel technique for area-execution time tradeoff using residual load decoding heuristics in genetic algorithms (ga) for integrated design space exploration (dse) of scheduling and allocation. this approach is also able to resolve issues encountered during dse of data paths for hardware accelerators, such as accuracy of the solution found, as well as the total exploration time during the process. the integrated solution found by the proposed approach satisfies the user specified constraints of hardware area and total execution time (not just latency), while at the same time offers a twofold unified solution of chaining based schedule and allocation. the cost function proposed in the genetic algorithm approach takes into account the functional units, multiplexers and demultiplexers needed during implementation. the proposed exploration system (expsys) was tested on a large number of benchmarks drawn from the literature for assessment of its efficiency. results indicate an average improvement in quality of results (qor) greater than 26 % when compared to a recent well known ga based exploration method. key words: area; high level synthesis; exploration; scheduling; chaining; execution 1. introduction as the complexity of very large scale integration (vlsi) designs increases, the design of application specific integrated circuits (asic) should be addressed at higher levels of abstraction in order to meet the growing challenges. of late there has been a major shift among all well-known electronic design automation (eda) vendors from traditional register transfer level (rtl) designs to high level synthesis. however, for comprehensive high level system designs, efficient design space exploration techniques are required during hls that can concurrently meet the user specified constraints of  received january 27, 2014 corresponding author: reza sedaghat electrical and computer engineering, ryerson university, toronto, canada (e-mail: rsedagha@ee.ryerson.ca) 236 a. sengupta, r.sedaghat, vk. mishra hardware area and execution time. furthermore, design space exploration should also be able to concurrently resolve the orthogonal issues encountered during dse, such as minimizing the time of the exploration process and maximizing the precision required. hence, the tremendous advancement of highly complex digital vlsi circuits in the current generation of portable devices and other electronic products has mainly become possible owing to the efficient design techniques developed so far [1]. the process of hls can be broadly classified into three phases. the first phase involves the conversion of the algorithm into data flow graph (dfg). the second phase includes scheduling, which assigns operations into the appropriate control steps. allocation, the third phase in high level synthesis, is the data-path synthesis that allocates hardware resources such as registers and busses, and binds the operations of dfg to functional units [1]. the hls phase consists of interdependent tasks such as scheduling and allocation. scheduling is the process of assigning the operations in specific control step while resource allocation refers to the assignment of the functional units to perform the operations, multiplexers and demultiplexers to switch between different inputs and output. however, the problem of solving the integrated scheduling and allocation by exhaustive analysis is strictly prohibited [1]. 2. related work the problem of design space exploration was addressed in [2], where the authors have proposed the use of a genetic algorithm in the binding and allocation phase in high level synthesis. this method involves crossover dependence on the force directed data path binding completion algorithm. one of the problems with [2] is that the method accepts a scheduled data flow graph as an input. this clearly signifies the inability of their approach to resolve the scheduling problem. authors in [3] have also proposed a genetic algorithm for time constrained scheduling. the chromosome is encoded with the permutation of operations, which is decoded by a list decoder, to decode the chromosome into a valid schedule. however, the approach does not handle chaining and execution time optimization. in addition, authors in [4] have proposed a problem space genetic algorithm for design space exploration of data paths. the authors have used the concept of heuristic/problem pair to convert a data flow graph into a valid schedule. the chromosome is encoded based on the „work remaining‟ value of each node. one of the problems with approach [4] is that the second special parent chromosome built in correspondence with the minimum functional units (i.e. serial implementation) does not differ in the work remaining field of the first special chromosome. this may not always properly lead to reaching the optimal solution. further, the cost function considers only latency and not total execution time. the problem of design space exploration was also addressed in [5] by suggesting order of efficiency, which assists in deciding preferences amongst the different pareto optimal points. research in [6] suggested that identification of a few superior design points from the pareto set suffices for an excellent design process. evolutionary algorithms in [7], such as the genetic algorithm (ga), have been suggested to yield better results for the design space exploration process. the use of ga has also been suggested as a framework for dse of data paths in high level synthesis in [8]. authors in this approach have proposed a priority order based chromosome for the data schedules and an independent chromosome for the functional units. their work uses the robust search capabilities of the genetic algorithm for scheduling and execution time – area tradeoff in ga using residual load decoder 237 allocation of datapath with the aim to find a solution for both the module selection and scheduling. one of the drawbacks of [8] is that the approach does not consider resource binding. thus, the cost function proposed does not reflect the multiplexer and demultiplexers‟ resources. furthermore, like other ga design space exploration approaches, [8] only considers optimization of latency and area. another approach introduced by researchers in [1] was also based on pareto optimal analysis. according to their work, the design space was arranged in the form of an architecture vector design space for architecture variant analysis and optimization of performance parameters. though the results proved promising the approach was unable to handle chaining based scheduling. furthermore in [9] and [10], authors described another approach to dse in high level systems based on binary encoding of the chromosomes. work shown in [11] for dse suggests that authors used an evolutionary algorithm for successful evaluation of the design for an application specific soc. approaches [9]-[11] only considered traditional latency and not the execution time constraint for data pipelining. the work shown in [12] discusses the optimization of area, delay and power in behavioral synthesis, but does not focus on the high level design space exploration using multi chromosomal genetic algorithm nor does it consider execution time during data pipelining. furthermore, authors in [13] introduce a tool called systemcodesigner that offers rapid design space exploration with rapid prototyping of behavioral systemc models. automated integration was developed by integrating behavioral synthesis into their design flow, while authors in [14] describe current state-of-the-art highlevel synthesis techniques for dynamically reconfigurable systems. additionally, authors in [15]-[17] also used genetic algorithms for scheduling and resource allocation for data path synthesis. another class of scheduling methods employed previously was probabilistic in nature. for example the simulated annealing (sa) and simulated evolution (se) based scheduling techniques have been used for the high level synthesis problem. authors in [18], [19] have proposed simulated annealing scheduling method called „salsa‟ which uses many probabilistic search operators to enhance the performance of sa-based technique for high level synthesis problem. moreover, authors have also proposed an extended binding model for handling the scheduling problem in high level synthesis. furthermore, authors in [20] also used sa for scheduling problem with simultaneous minimization of registers and function units. se has been proposed by authors in [21] for solving the combined problem of scheduling and resource allocation in high level synthesis. all aforementioned approaches [15]-[21], however, do not consider execution time, chaining and data pipelining. in contrast to the proposed approach, [15]-[17] do not incorporate a special seeding process based on serial and parallel implementation in order to efficiently guide the ga to optimal/nearoptimal solution. other previously proposed approaches [22], [23] are based on integer linear programming (ilp). here, the computational complexity is massive and although able to provide good results, consume enormous time. furthermore, the concept of data pipelining based on execution time was not shown during system trade-off. constructive approaches [24][27] are very straightforward to implement but suffer from the major drawback of leading to poor quality of solutions owing to their greedy nature. 3. the proposed approach for genetic algorithm based exploration system (expsys) the approach proposed in this paper for finding the optimal integrated scheduling, allocation, binding and module selection, employs a special multi chromosomal compound 238 a. sengupta, r.sedaghat, vk. mishra chromosome structure that has the efficient ability to search the design space. it provides an integrated solution to the problem of scheduling, allocation and binding by yielding a set of hardware resources that contains the details of functional units (e.g. number and kind). further, this solution reduces the cost function based on constraints provided for hardware area (consisting of function units, multiplexers, demultiplexers) and execution time (considering latency, cycle time and number of sets of data to be executed). in order to reduce the final cost, the module selection indicates the optimal number of resources needed of each kind, as well as the right version of a specific resource needed from the module library during implementation the expsys has been developed by a new chromosome encoding technique that consists of separate chromosome structures for each of the resources, rather than the traditional method consisting of a single chromosome structure to represent all the resources. moreover the proposed approach also includes an independent chromosome representation of the module allocations fields. 3.1 the expsys overview the input to the ga framework is the behavioral description of the dataflow graph (dfg), or the high level description of the algorithm in c language, that describes the behavior of the application. in addition to the behavioral description of the application input to the ga framework also includes the set of user specified design constraints for hardware area and execution time (with the user specified weight factors for hardware area-execution time tradeoff), control parameters for the genetic algorithm, and the module library that contains specifically three different information viz. maximum resources available, clock cycles and area. the proposed framework is comprised of two basic units. the first unit is the proposed heuristic that acts as an input to the skeleton for the genetic algorithm. the second unit processes the information provided by the first unit to produce a final integrated scheduling, allocation and module selection solution. the proposed skeleton (algorithm) for the genetic algorithm is shown is fig.1. it uses a new heuristic based on residual load criterion that assigns a specific priority for each operation in the chromosome structure. the first parent (p1) chromosome of the nodal string (this string is defined later in section 4.2) is encoded based on the residual load (α) of each resource from the asap scheduling graph. on the contrary, each operation of the second parent (p2) nodal string is encoded based on the difference of the latency obtained by using asap scheduling with maximum resource (l asap ) and the residual load (α) for each operation (oi) obtained for p1 chromosome. hence, the encoded value of each operation (oi) of the second parent chromosome is calculated using equation (1). asap il (o )   (1) the rest of the parents of the population in the nodal string encoded with the residual load values are obtained by random perturbation. the other parent chromosomes (p3…..pn) of the population obtained by the perturbation function should be individuals lying between the parent p1 derived from the schedule based on maximum resource and parent p2 derived based on minimum resource. this is more logical because the optimal solution to the integrated problem lies somewhere between the maximum and the minimum resource. the developed perturbation function, which yields the residual load values, is given in equation (2) execution time – area tradeoff in ga using residual load decoder 239 pf ( ) / 2   (2) where „µ‟ is a random value between „α‟ and „β‟. the additional random value „µ‟ is added to the perturbation function because, in order to have more diversity in the initial population, the residual load value for the rest of the parents (p3…..pn) should be different (note: this residual load value determines the priority among nodes during the decoding process. thus, it is necessary to have different residual load values by adding the random value to the perturbation function). moreover, having greater diversity results in searching all the corners of the design space, thereby assisting in finding the optimal/near-optimal solution. ignoring „µ‟ in the above function would encode the nodal string part for the rest of the parents (p3…..pn) with the same residual load values, thereby reducing the diversity of the initial population. the function in equation (2) is used when encoding the values of the nodal string for the rest of the parents. on the other hand, the perturbation of the resource allocation string (this string is defined later in section 3.2) for the other parents is obtained by applying the algorithm shown below: algorithm 1) schedule the dfg using asap algorithm and calculate the latency (l). 2) generation g =1. 3) creation of the initial population by chromosome encoding with priority list of nodes based on „residual load‟ which is done as follows: a) encode the first parent (p1) of the nodal string using the residual load (α) based on the asap schedule. encode the first parent (p1) of resource allocation string with maximum resources. b) encode the second parent (p2) of the nodal string using residual load (β) calculated as: l asap – α (oi) based on minimum resources. encode the second parent (p1) of the resource allocation string with minimum resources. c) create the rest of the parent (p3…pn) of the nodal string with residual load based on the perturbation function = (α + β)/2 ± µ; where „µ‟ is a random value between „α‟ and „β‟. 4) perform crossover with very high probability (pcross) among parents to create off-springs. 5) decode the chromosomes using the proposed „residual load heuristic‟ to find scheduling solutions by binding dfg operations to fu, allocating mux‟s and demux‟s. 6) get information about the functional units (fu) such as versions, area occupied, clock cycle etc. from the module library. 7) calculate the global cost function and determine the fitness of each individual. global cost function considers a) total area which is a combination of: i) area of fu ii) area of mux iii) area of demux. b) total execution time which is a combination of, i) latency ii) cycle time and iii) number of sets of data. 8) perform mutation on the least fit nodal string chromosome and the resource allocation string chromosome with probability, pm = 0.25. mutation is performed once every generation 9) decode the mutated chromosomes using the proposed „residual load heuristic‟ to find scheduling solutions and then calculate the cost of the mutated chromosome again. 10) select the best population from the set of off-springs and parents from this generation and take it forward to the next generation. increment g, (g=g+1) until g< generation max 11) end ga run. fig. 1 the proposed skeleton for the expsys 240 a. sengupta, r.sedaghat, vk. mishra perturbation rule for the resource allocation chromosome for rest of the parents 1. randomly pick any two nodes (v1, v2) from the chromosome that represents the resource allocation. 2. randomly select any integer value (i) ranging between or equal to „α‟ and „β‟ for that specific operation (node). hence, α <=i<= β once the parents for the initial population are formed direct crossover is applied. crossover results in creation of off-spring in that generation. for every mating between two parents, two off-springs can be created. if, for example, size of the parents in the population is 8, then 16 off-spring will be produced. therefore, the total population of the first generation is 24. the next task is to decode the generated individuals of the first generation by applying a new „residual load heuristic‟ that always results in a valid schedule. during the process of formation of the schedule solution, the data dependency is strictly followed before any operation is selected for scheduling. the global cost function is then determined in order to judge the fitness of each individual solution. the least fit individual is mutated in order to hope for a better solution. after mutation, the mutated chromosome is again decoded and its fitness is adjudged. the best fit individuals from this first generation are then forwarded to the next generation. this process continues until the maximum generation g(max) specified in reached. 3.2 chromosome representation suitable encoding of the problem dictates the capability of the genetic algorithm to find optimal or near–optimal solutions. the proposed approach uses a multi chromosome structure consisting of independent strings to separately represent the priority of the nodes of the dfg for each fu type and the resource allocation information. the approach is called multi chromosomal because each fu (resource) is represented as an independent substring in the nodal string structure. it has two independent strings to separately represent the nodes of the dfg (called „nodal string‟) and the resource allocation (called „resource allocation string‟). the „nodal string‟ contains the residual load values of each node which will determine the priority of the nodes during scheduling. the „residual load heuristic‟ is used when decoding the nodal string in order to obtain a valid scheduling solution. the „resource allocation string‟ contains a list of integers, which indicate the maximum number of resources allowed during scheduling. the resource allocation string contains a substring with integers to represent the maximum number of functional units of each type available for scheduling in every time step of the schedule. this encoding scheme for both the resource allocation string and nodal string assures that the genetic algorithm always produces a valid schedule as well as reaching all the corners of the design space to explore the integrated solution of scheduling, allocation and binding. the encoding scheme for the „nodal string‟ and the „resource allocation string‟ is shown with an example of a benchmark „differential equation solver‟. small values of delay in cc are used during demonstration. for clarity, during experimentation real values have been used. the schedule of the dfg of the differential equation solver using asap is shown in fig.2. the latency (l) obtained is 12cc (note: assumes multipliers and adders/subtractors take 4cc and 2cc respectively). the corresponding chromosome encoding for the first parent (p1) of the nodal string is shown in fig. 3(a). the total residual load of each operation (node) is obtained by summation of the residual load of the successor operations following that node. e.g. for execution time – area tradeoff in ga using residual load decoder 241 node 1, the residual load is (4+4+2+2) cc = 12cc. the second parent (p2) chromosome is encoded based on the residual load values obtained using equation (1). the second parent (p2) chromosome encoding is shown in fig. 3(b). the rest of the parents of the initial population is obtained using equation (2) which is a perturbation function used to encode the residual load values. the residual load values for rest of the parents always lie between the values from the first parent and second parent. this scheme has been developed because the optimal solution to the problem should always lie between the serial and maximally parallel implementation [4]. on the other hand, the first parent (p1) shown in fig. 3(a) and second parent (p2) of the resource allocation string shown in fig. 3(b) are based on the user specified maximum and minimum resources respectively. for example, the first parent (p1) of the resource allocation string shown in fig. 3(a) consists of three multipliers, three adders, two subtractors and one comparator. additionally, second parent (p2) of the resource allocation string shown in fig. 3(b) consists of one multiplier, one adder, one subtractor, and one comparator. the rest of the parents (p3…p8) of the „resource allocation string‟ are obtained using the algorithm in fig 3. the „resource allocation string‟ for the rest of the parents of the initial population is also encoded with multiplier, adder, subtractor, and comparator option (note: „m‟, „a‟, „s‟, „c‟ refers to multipliers, adders, subtractor, and comparators respectively in the resource allocation string). thus, the final solution found by the proposed expsys is able to indicate the final combination of multipliers, adders, subtractor, and comparators needed to implement the problem based on the user specified hardware area and execution time constraints. the nodal string and the resource allocation string for the rest of the parents are shown in fig.4(a) and fig.4(b) respectively. for example, in case of fig 4(a), the encoding of the third parent for the resource allocation string is obtained by first picking up randomly any two nodes m (multiplier) & a (adder) and then randomly selecting any integer value between „3‟ and „1‟ for m and between „3‟ and „1‟ for a. the randomly selected value for both m & a is „2‟. similarly, the rest of the parent chromosomes can be built by perturbation. this type of perturbation for the „resource allocation string‟ and the perturbation function for the „nodal string‟ described before aids in searching all the possible combinations of the design space so that the ga can reach an optimal or nearoptimal solution. fig. 2 scheduling of differential equation solver using asap 242 a. sengupta, r.sedaghat, vk. mishra fig. 3 chromosome encoding for the first parent (a) and second parents (b) fig. 4 chromosome encoding for the third parent (a) and fourth parent (b) fig. 5 crossover between p1 and p2 execution time – area tradeoff in ga using residual load decoder 243 3.3 crossover technique crossover is a technique for producing off-spring when two parents mate. the parents are selected by a binary tournament selection method [28]. in this work, we propose the independent direct crossover of the two independent strings viz. nodal string and resource allocation string to produce separate off-spring for each with a very high crossover probability (pcross = 1.0). furthermore, the direct crossover is applied to each sub structure of the nodal string structure. for example, direct crossover is independently applied to adder substring, multiplier substring, subtractor substring, etc. of each nodal string as well as resource allocation string. since the nodal string encodes the residual load of each operation for a particular fu, the crossover results in crossing only the residual load values. hence the precedence relationship among the operators is not disobeyed. 3.3.1 multi-point crossover of the nodal string before the crossover scheme can be applied to the nodal strings, the two parents are randomly divided into two halves at point n. the crossover point selected during crossing is absolutely random. this is because the nodal string is encoded with residual load values of the nodes and crossover operation only crosses the residual load values, hence choosing a random cut point for crossover does not disturb the precedence relationship among the nodes. only random cut point has been used in the proposed work as this technique has been widely used by other approaches and provided efficient results. the proposed crossover is called multi-point because each substring of the nodal string representing independent fus is divided at a different point. for example, applying the direct crossover operator to the nodal string between the first parent (fig. 3(a)) and second parent (fig.3(b)) at point 2 for multiplier and point 1 for adder and subtractor, yields offspring 1 and offspring 2 respectively. offspring 1 inherits all the properties of the first half from the first parent, while the second half of the offspring is inherited from the second parent. the properties that are inherited from the parents are the residual load values and its corresponding node numbers (operations). the offspring 1 obtained after crossover between p1 and p2 is shown in fig 5(a), while offspring 2 obtained after crossover between p2 and p1 is shown in fig. 5(b). similarly the other offspring are obtained by crossing between the rest of the parents. for the sake of brevity, the rest of the offspring obtained have been omitted in this paper. 3.3.2 crossover of the resource allocation string the resource allocation string is responsible for encoding the number of hardware functional units of each type available for scheduling operations in each time step. since the number of allocated functional units of each type is totally independent of each other, the 1-point crossover can be easily applied. for instance, in the case of the dfg for differential equation solver benchmark, the two parents (p1 and p2) for the resource allocation string are shown in fig. 3(a) and 3(b) respectively. p1 represents a solution with three multipliers, three adders, two subtractors and one comparator while p2 represents a solution with one multiplier, one adder, one subtractor and one comparator. application of the direct crossover at a random cut point between p1 and p2 yields offspring 1 while crossing between p2 and p1 yields offspring2 as shown in fig 5(b). 244 a. sengupta, r.sedaghat, vk. mishra 3.4 mutation operation 3.4.1 mutation operator of the nodal string the mutation algorithm for resource allocation string is adopted from [8] based on random increment or decrement while mutation for nodal string is shown below: algorithm 1. randomly pick any two nodes (vi, vj) from the nodal string [k]. 2. swap the residual load values of the two selected nodes. if, vi = li and vj = lj, then, vi = lj and vj = li. according to the algorithm, any two nodes (vi, vj) in the string (k) are randomly selected for mutation. next, the residual load values of the two selected nodes are swapped. for example, let the residual load value for the two nodes (vi) and node (v2) selected be „l1‟ and „l2‟ respectively. therefore, after mutation the new residual load values for node (vi) is „l2‟ and node (vj) is „l1‟. this mutation technique drastically alters the residual load values, which act as the priority to select the operations for scheduling. as a result of this drastic alteration, the new operation to be scheduled can vastly affect the scheduling cost. 3.5 decoding process (determination of a valid schedule) the decoding of chromosomes always results in a valid scheduling solution, which strictly obeys the data dependency present between the operations. for the decoding process, a „residual load heuristic‟ is proposed. the residual load heuristic is shown in fig. 6. for example, in the case of offspring 1, the resource allocation string and the nodal string are shown in fig.5(a) and fig.5(b) respectively. the resource allocation string of offspring1 represents an allocation solution containing three multipliers, three adders, one subtractor, and one comparator. on the other hand, the priority of each operation for a particular type of fu is indicated by the residual load values in the nodal string (fig.5(b)). therefore, for the dataflow graph shown in fig.3, the scheduling solution of offspring 1 is shown in fig. 7. the resulting solution is a valid schedule, allocation and binding obtained for offspring 1. the solution provides an integrated solution to the concurrent problem of scheduling, allocation and binding. 3.6 global cost function and fitness evaluation methodology the proposed approach objective is to simultaneously reduce the execution time required for a specific set of data as well as the total hardware area occupied. most of the previous approaches [2], [4], [7], [8] have only considered latency as a design constraint and not total execution time, which considers the latency, cycle time and also the number of sets of data to be executed. in the presented approach, a comprehensive cost function has been developed that considers the total execution delay, taking data pipelining as well as the total hardware area into account. the decoding process strictly follows the „residual load heuristic‟ and hence always results in a feasible solution. the cost function (cg) developed considers total execution time and area is shown in eq. (3). execution time – area tradeoff in ga using residual load decoder 245 fig. 6 flow chart for residual load heuristic fig. 7 chaining schedule and allocation to offspring 1 (decoded) 246 a. sengupta, r.sedaghat, vk. mishra exe cons fu mux demux cons g max max t t [a (a a )] a c w1 w2 t a         (3) texe = total execution time taken for execution of the given sets of data; where texe is calculated using the function from [1] given in equation (4): exe ct {l (n 1) t }    (4) l= latency of the scheduling solution. tc = cycle time of the scheduling solution. (note: the cycle time is the difference in clock cycles between any consecutive outputs of pipelined data instances. the cycle time information is therefore not extracted from the module library since it is not readily available, i.e. the cycle time calculation for the integrated solution (fig. 7). the output for first set of data is arriving after 14cc while the output for second instance of data is arriving after 26cc. thus, due to pipelining there is a cycle time difference of 12 cc resulting from considering the initiation interval. therefore the option of cycle time during pipelining which is the resulting effect of considering initiation interval during data pipelining has been also taken into account during the exploration process. at= total area calculated using eq. 5. t fu mux demuxa = a +(a +a ) (5) n = number of sets of data to be executed. cg = global cost of the integrated solution tcons = execution time specified by the user. tmax = max execution time taken by a solution during the specific generation (g). afu = total area of the functional units. amux = total area of the multiplexer used during implementation. ademux = total area of the demultiplexers used during implementation. acons = area constraint specified by the user. amax = max hardware area of a solution during the specific generation (g). w1 and w2 = user specified preference of the constraints. the cost function requires input from various sources to evaluate the fitness of each solution found. for the calculation of the execution time, the sources consist of: a) module library information, b) data extracted for the hardware implementation, c) data flow graph and d) scheduling solution found after decoding the chromosome (latency), number of sets of data, cycle time together. 3.7 termination criterion for the genetic algorithm the maximum generation has been kept constant for each benchmark run. although making the number of generations proportional to the problem size is more logical, settling on an average number of maximum generations for both small and large size benchmarks is a good compromise. therefore, experiments dictated that retaining the maximum generation g(max) at 100 is an optimal compromise. execution time – area tradeoff in ga using residual load decoder 247 4. experimental results various dsp benchmarks [29], [30] such as digital filter, auto regressive filter (arf), discrete wavelet transformation (dwt), digital butterworth filter, band pass filter (bpf) and elliptic wave filter (ewf), mpeg motion vectors, mesa: matrix multiplication and jpeg: down sample were tested and verified. the proposed approach has been implemented in java and run on intel core i5-2450m processor, 2.5 ghz with 3mb l3 cache memory and 4gb ddr3 ram. expsys finds optimal/near-optimal results for all the benchmark applications. moreover, the proposed expsys was also compared to [8] with respect to the mentioned benchmarks under the same constraints to make a qualitative assessment and strength of the proposed approach. the proposed achieved better quality of result (determined by eq.6) as shown in table i. furthermore, expsysalso considers cycle time resulting from initiation interval and latency to create a genuinely pipelined functional data-path during performance calculation. [8], on the other hand, is not able to optimize the execution time considerably due to its inability to create a genuinely pipelined functional data-path. thus, for determining of execution time in [8], “n” set of processing data is multiplied directly with the latency as per: [8] exet n*l. where the qor is determined as: max max 1 2 t exea t qor a t        (6) with respect to achieved qor, expsys produces better solutions compared to [8] for all the benchmarks as evident in table 1. for example, in the case of arf benchmark, the optimal resource configuration found 3 (*) and 1(+), the area of solution is 10934au, the execution time is 54281µs and the qor is 0.35. on the other hand [8], based on same constraints, yields an optimal resource configuration which is 4(*), 1(+) with 13776au area, 45630 µs execution time and 0.36 qor. expsys achieves an average improvement in qor greater than 26% (table 1). 5. conclusion this paper proposed a novel technique for area-execution time tradeoff using residual load decoding heuristics in genetic algorithm (ga) for integrated design space exploration (dse). to the best of the authors‟ knowledge, this approach is the first gabased dse method for area-execution time tradeoff in hls. based on the results obtained from the experiment, the proposed expsys is able to provide not only competitive but also superior results for almost all tested dsp benchmarks. acknowledgement: this work is supported by the optimization and algorithm research lab (opral), ryerson university, canadian microelectronics corporation (cmc), motorola, nserc crsng, ontario innovation trust and sun microsystems. additionally, this work acknowledges the assistance provided by science and engineering research board (serb), department of science and technology, govt. of india. 248 a. sengupta, r.sedaghat, vk. mishra references [1] anirbansengupta, reza sedaghat, zhipengzeng, “a high level synthesis design flow with a novel approach for efficient design space exploration in case of multi parametric optimization objective”, microelectronics reliability, elsevier, volume 50, issue 3, march 2010, pages 424-437. [2] c. mandal, p. p. chakrabarti, and s. ghose, “gabind: a ga approach to allocation and binding for the high-level synthesis of data paths,” ieee transaction on vlsi, vol. 8, no. 5, pp.747–750, oct. 2000. table 1 experimental results of comparison with [8] for the dsp benchmarks dsp benchmarks parameters of comparison (note: us = micro seconds and au = area unit; au = 1transistor, g(max)=100 and w1=w2=0.5 ) optimal resource combination execution time n=1000 (us) area (au) qor expsys [8] expsys [8] expsys [8] expsys [8] auto regressive filter (arf) fu 3(*),1(+) 4(*),1(+) 54281us 45630us 10934au 13776au 0.35 0.36 mux 8 10 constraint 70000us constraint 15000au demux 4 5 discrete wavelet transformation (dwt) fu 4(*),1(+) 2(*),1(+) 10844us 66420us 13776au 8092au 0.38 0.56 mux 10 6 constraint 30000us constraint 10000au demux 5 3 digital butterworth filter fu 2(*),1(+) 3(*),1(+) 22880us 22410us 8092au 10934au 0.42 0.49 mux 6 8 constraint 30000us constraint 9000au demux 3 2 band pass filter (bpf) fu 4(*),1(+) 2(*),1(+) 11642us 68310us 13776au 8092au 0.42 0.52 mux 10 6 constraint 30000us constraint 15000au demux 5 3 elliptic wave filter (ewf) fu 3(*),1(+) 2(*),2(+) 21085us 46440us 10934au 10500au 0.45 0.57 mux 8 8 demux 4 4 constraint 50000us constraint 8000au jpeg downsample fu 2(*),1(+) 1(*),1(+) 10818us 29700us 8092au 5250au 0.31 0.59 mux 6 4 constraint 15000us constraint 15000au demux 3 2 mpeg motion vector fu 4(*),1(+) 5(*),1(+) 32680us 35640us 13776au 16618au 0.24 0.27 mux 10 12 constraint 40000us constraint 25000au demux 5 6 discrete cosine transformation (dct) fu 4(*),1(+) 2(*),2(+) 31467us 88290us 13776au 10500au 0.33 0.47 mux 10 8 constraint 50000us constraint 15000au demux 5 4 mesa horner fu 3(*),1(+) 2(*),1(+) 10843us 65070us 10934au 8092au 0.35 0.59 mux 8 6 demux 4 3 constraint 25000us constraint 12000au mesa matrix multiplication fu 7(*),1(+) 4(*),2(+) 53628us 132570us 32570au 16184au 0.19 0.24 mux 16 12 constraint 200000us constraint 40000au demux 8 6 execution time – area tradeoff in ga using residual load decoder 249 [3] m. j. m. heijlingers, l. j. m. cluitmans, and j. a. g. jess, “high-level synthesis scheduling and allocation using genetic algorithms,” in proc. asp-dac., pp. 61–66, 1995. [4] m. k. dhodhi, f. h. hielscher, r. h. storer, and j. bhasker, “datapath synthesis using a problem-space genetic algorithm,” in ieee trans.comput.-aided des., vol. 14, pp. 934–944,1995. [5] i. das. a preference ordering among various pareto optimal alternatives. structural and multidisciplinary optimization, 18(1):30–35, aug. 1999. [6] alessandro g. di nuovo, maurizio palesi, davide patti, fuzzy decision making in embedded system design,” proc. of 4th intl conference on hardware/software codesign and system synthesis, pp: 223-228, october 2006. [7] j. c. gallagher, s. vigraham, and g. kramer,“a family of compact genetic algorithms for intrinsic evolvable hardware,” ieee trans. evolutionary computation., vol. 8, no. 2 , pp. 1–126, apr. 2004. [8] vyas krishnan and srinivaskatkoori, “a genetic algorithm for the design space exploration of datapathsduring high-level synthesis, ieee tran.on evolutionary computation, vol.10, no.3, 2006. [9] e. torbey and j. knight, “high-level synthesis of digital circuits using genetic algorithms,” in proc. int. conf. evol. comput., pp.224–229, may 1998. [10] e. torbey and j. knight, “performing scheduling and storage optimization simultaneously using genetic algorithms,” in proc. ieee midwest symp. circuits systems, pp. 284–287, 1998. [11] giuseppe ascia, vincenzo catania, alessandro g. di nuovo, maurizio palesi, davide patti, “efficient design space exploration for application specific systems-on-a-chip” jrnl of systems architecture 53, pp:733–750, 2007. [12] a.c.williams, a.d.brown and m.zwolinski,“simultaneous optimisation of dynamic power, area and delay in behavioural synthesis”, iee proc.-comput. digit. tech, vol. 147, no. 6, pp: 383-390, 2000. [13] christian haubelt, thomas schlichter, joachim keinert, mike meredith, “systemcodesigner: automatic design space exploration and rapid prototyping from behavioral models”, proceedings of the 45th annual acm ieee design automation conference, pages 580-585, 2008. [14] xuejie zhang and kam w. ng, “a review of high-level synthesis for dynamically reconfigurable fpgas”, microprocessors and microsystems, elsevier, volume 24, issue 4, pages 199-211,1 2000. [15] n. wehn et al., “a novel scheduling and allocation approach to datapath synthesis based on genetic paradigms,” in proc. ifipworking conf. logic architecture synthesis, pp. 47–56, 1991. [16] r. m. san and j. p. knoght, “genetic algorithms for optimization of integrated circuit synthesis,” in proc. 5th int. conf. genetic algorithms, san mateo, ca, pp. 432–438, 1993. [17] r. j. cloutier and d. e. thomas, “the combination of scheduling, allocation and mapping in a single algorithm,” in proc. 27th design automation conf., pp. 71–76, jun. 1990. [18] j. a. nestor and g. krishnamoorthy, “salsa: a new approach to scheduling with timing constraints,” ieee trans. comput.-aided des., vol. 12, pp. 1107–1122, 1993. [19] g. krishnamoorthy and j. a. nestor, “data path allocation using extended binding model,” in proc. 32nd acm/ieee design automation conf., pp. 279–284, 1992. [20] s. devadas and a. r. newton, “algorithms for hardware allocation in data path synthesis,” ieee trans. comput.-aided des., vol. 8, pp.768–781, 1989. [21] t. a. ly and j. t. mowchenko, “applying simulated evolution to high level synthesis,” ieee trans. comput.-aided des., vol. 12, no. 2, pp.389–409, feb. 1993. [22] c. h. gebotys and m. i. elmasry, “global optimization approach for architectural synthesis,” ieee trans. comput.-aided des., vol. 12, pp. 1266–1278, 1993. [23] c. t. hwang, j. h. lee, y. c. hsu, and y. l. lin, “a formal approach to the scheduling problem in highlevel synthesis,” ieee trans. comput.aided des., vol. 10, no. 2, pp. 464–475, feb. 1991. [24] g. de micheli, synthesis and optimization of digital circuits. new york: mcgraw-hill, 1994. [25] r. camposano, “path-based scheduling for synthesis,” ieee trans.cad., vol. 10, pp. 85–93, 1991. [26] p. g. paulin and j. p. knight, “force-directed scheduling for the behavioral synthesis of asics,” ieee trans. comput.-aided des., vol. 8, no.6, pp. 661–679, 1989. [27] a. c. parker, j. t. pizarro, and m. mlinar, “maha: a program for datapath synthesis,” in proc. 23rd acm/ieee design automation conf., 1986, pp. 461–466. [28] t. blickle and l. thiele, “a mathematical analysis of tournament selection,” in proc. 6th int. conf. genetic algorithms, pp. 9–16, 1995. [29] http://www.cbl.ncsu.edu/benchmarks/. [30] saraju p. mohanty, nagarajanranganathan, elias kougianos and priyadarsanpatra, “low-power highlevel synthesis for nanoscale cmos circuits” chapterhigh-level synthesis fundamentals, springer us, 2008. instruction facta universitatis series: electronics and energetics vol. 28, no 2, june 2015, pp. 165 175 doi: 10.2298/fuee1502165n image and video processing with fpga support used for biometric as well as other applications  andrzej napieralski, jakub cłapa, kamil grabowski, małgorzata napieralska, wojciech sankowski, przemysław sękalski, mariusz zubert lodz university of technology, department of microelectronics and computer science, lodz, poland abstract. paper presents the recent research in dmcs. the image processing and biometric research projects are presented. one of the key elements is an image acquisition and processing. the most recent biometric research projects are in the area of authentication in uncooperative scenarios and utilizing many different biometric traits (multimodal biometric systems). also, the recent research on the removal of geometric distortion from live video streams using fpga and gpu hardware is presented together with preliminary performance results. key words: biometrics, fpga, video correction algorithms 1. researches on biometrics 1.1. introduction biometrics has a great potential and many fascinating applications. one can imagine airports with automatic passenger identification, where passenger does not need to show any id document but can conveniently pass a biometric identification gate. another huge space for biometric systems implementations are banking systems, where cash machines do not require bank customers to present credit card or enter pin number. biometric technologies have been developed for decades. the first successful biometric system implementation was published in 1991 as a case of face recognition and in 1993 as a case of iris recognition. even longer development has been devoted to fingerprint and hand recognition. technical note on the first operational fingerprint matching algorithm used at the fbi (federal bureau of investigation) for narrowing the human search was published in 1972, while first commercial hand geometry recognition systems became available in received december 2, 2014 corresponding author: andrzej napieralski lodz university of technology, department of microelectronics and computer science, ul. wolczanska 221/223, 90-924 lodz (e-mail: napier@dmcs.pl) 166 a. napieralski et al. 1974. nowadays, after such a huge development effort, one can ask why even the most modern societies have not widely adopted biometric solutions in everyday life. the biometric system to be widely adopted by citizens has to be easy to use, fast, inexpensive, and what is most important reliable. currently none of the existing biometric technologies satisfactorily fulfils all listed conditions. today even the most advanced solutions do not provide 100% reliability, and the error rates, although extremely low, are inevitable in a practical system. this is especially visible in large scale implementations, where the number of registered users can be counted in millions. 1.2. dmcs biometric projects overview current practical implementations and current state of the art indicate that there is still a large space for improvements in the field of biometrics. the department of microelectronics and computer science (dmcs) has been conducting researches on biometrics since 2000. the first publications [1,2] concerns the automatic people identification on the basis of iris pattern. in 2004 the first biometric project was granted to the department by the polish state committee for scientific research. the project was entitled “persons recognition and identification based on eye biometric parameters” and was focused on iris recognition technology development. the project resulted in construction of iris station device and image processing algorithms (see fig. 1), that form a fully functional prototype system for iris recognition. the experience of the team resulted in the realization of the next two projects which were a continuation of researches on iris recognition technology. these projects were entitled “hardware acceleration of computations for biometric applications” and “iris positive authentication system”. the three mentioned projects resulted in a complete iris recognition solution developed in the dmcs. fig. 1. authentication process based on iris pattern current biometric researches in the dmcs focus on multimodal solutions, where data coming from more than one biometric feature are fused to enhance system reliability. the two projects on multimodal biometrics are currently ongoing. they are entitled “multimodal biometric system for contactless person identification” and “non-cooperative biometric system for positive authentication”. the first one concentrates on cooperative scenarios, image and video processing with fpga support used for biometric as well as other applications 167 while the second one focuses on non-cooperative scenarios. the list of all projects on biometrics in dmcs (completed and ongoing) is presented in table 1, while the details are given in the next sections. table 1 biometric projects in dmcs title acronym signature time frame status persons recognition and identification based on eye biometric parameters iris station 1374/t11/2004/27 17.11.2004 16.05.2007 completed hardware acceleration of computations for biometric applications biosys k25/b.w.2/2009 1.01.2009 31.12.2009 completed iris positive authentication system ipass k-25/2011/bw/3 1.11.2011 05.2013 completed multimodal biometric system for contactless persons identification mbs 2011/01/d/st6/06269 08.12.2011 07.12.2014 in progress non-cooperative biometric system for positive authentication compact lider/027/591/l4/12/ncbr/2013 01.11.2013 10.2016 in progress 1.3. iris station project the result of this completed project is iris station laboratory stand developed in the dmcs biometric laboratory (see fig. 2). it is a high resolution iris image acquisition system dedicated for biometric applications. this prototype system allows real-time eye tracking and registration/identification of the observed person. fig. 2 iris station laboratory stand in the presented solution the dedicated system is applied, where image acquisition is performed by digital camera controlled and positioned by personal computer in the realtime. moreover, the system includes specialized lighting system, precise positioning system of the camera with lens and lighting, optical path with image acquisition system. to minimize the impact of accelerations on precise shutter mechanism of camera and photo cameras there was applied a variable frequency control of step motors with the 168 a. napieralski et al. ability to independently control motors’ movement while tracking the observed object. a multi-channel control of lighting block allows a variety of lighting conditions, including the ability to acquire iris images with different lighting conditions during a single session. the system contains a dedicated support allowing proper and comfortable head placing towards the acquisition system. the system’s operation may be summarized in the following steps: a) software installed on the working station acquires an image from the camera; b) it localizes the iris in the image and verifies if the iris region is focused; c) the focus is corrected if necessary; d) the acquired high resolution iris image is further processed to recognize the person’s identity. experimental results obtained in the project are presented in [3-5, 9-11]. 1.4. biosys project a biometric security system needs to process computationally intensive tasks of authentication flow, such as quality assessment, segmentation and analysis, protocols, and database scanning. this flow contains two broad areas of computing: mathematical calculations (typical for dsp systems) and data manipulation and testing (typical for standard processor architectures). even though such systems require a fair amount of signal processing, typical personal computers (pcs) are still widely used for this purpose with software that is responsible for data processing. moreover, although current commercially available systems use images that originate from relatively simple vision systems, these systems will have to handle more information and increased processing in the near future because recently a significant effort has been focused on authenticating objects at-a-distance and on-the-move using the iris trait. fig. 3 hardware implementation architecture of biometric algorithms the main motivation for this work was to develop a hardware system for iris identification as a positive biometric system that is able to implement contextual and non-contextual filtering, image segmentation, pattern calculation, and testing within a template’s repository. an additional requirement for the device was to impose certain processing time limits, which is important in high-throughput biometric authentication or when preprocessing. biometric sample quality assessment has to be conducted using a video signal with a certain frame rate. thus, the described solution introduces a specialized hardware-based architecture (see fig. image and video processing with fpga support used for biometric as well as other applications 169 3) that can take advantage of the inherent parallelism of fpgas and their embedded processors as well as the contextual filtering of dsps. additionally, dsp reconfiguration and multicore processing techniques used for even more efficient data processing have been tested [6]. the developed system, called bioserver, is presented in fig. 4. fig. 4 the bioserver device 1.5. ipass project the main aim of the project was to design a simple, low-cost device able to realize iris positive authentication within dmcs employees that can be practically implemented in b18 building on tul campus. the scientific goal of the project is to design a lesscooperative iris-based biometric authentication system as well as methods and devices for acquisition of images with sufficient content of distinctive features. one of the key problems was to enable the automatic identification of people that were previously registered by the system on the basis of observation carried out by the low-cost vision system. although there are known solutions for positive biometric authentication (identification or verification) available at the commercial market, there is still place for innovations in the field of automated biometric recognition using iris pattern, especially when cooperation between a subject and system is taken under consideration. such systems need to deal with highly unconstrained imaging conditions, such as: exposition, wavelength of illumination, ambient light reflections from the eye’s surface, perspective fluctuations, as well as cheat attempts, etc. 1.6. mbs project the scientific goal of the project is to develop a multimodal biometric system for contactless persons identification working based on the following physical and behavioral features (biometrics): 1. iris pattern 2. face geometry 3. hand geometry 170 a. napieralski et al. in the constructed system iris pattern features unique for each individual are derived from the analysis of the iris structure image taken under nir (near infrared) light. unique face features are computed by analyzing two data sources acquired simultaneously: face image taken under visible light and face geometry acquired using 3d scanner. unique hand features are extracted by analyzing the 3d scan of hand. the multimodal biometric database is collected using the iris station laboratory stand (iris) and the mbs laboratory stand (face and hand). the mbs laboratory stand is presented in fig. 5. it is built based on two structured light 3d scanning devices manufactured by the smarttech company. it allows two modes of operation: fast and precise. the precise mode is intended for scanners calibration (setting up common coordinate system based on template of known geometry presented to both devices), while the fast mode is dedicated for face and hand samples acquisition. the preliminary experimental results obtained in the project are presented in [7, 8]. fig. 5 mbs laboratory stand (left) and the structured light scanning device (right) 1.7. compact project automatic identification of people at-a-distance and on-the-move is one of the most explored areas of biometrics nowadays. this problem is dealt with by the compact project where the recognition process is done using specialized vision systems under unconstrained imaging conditions, at a distance and on the move. one of the key assumptions is to realize a system able to acquire biometric samples with the level of cooperation lower than in the case of the iris-on-the-move technology. it is assumed that the authorized subject should be inside an area around the system rather than the straight path like in the iom. the other system feature is the high throughput of the system, understood as a number of persons that could be successfully authorized per time interval – not less than in iom technology, i.e., 30 persons per minute. using the modern fpga or/and multicore dsp technology, it may be possible to recognize several subjects at the same time increasing significantly the throughput of the system. the scientific goal of the project is to design a non-cooperative, high-throughput biometric positive authentication system based on features fusion of iris pattern, periocular and face image, as well as methods and devices for acquisition of such images with sufficient content of distinctive features. the authentication process (see fig. 1) is planned to be mainly based on iris pattern and to be supported by a face trait, since iris pattern achieves the best biometric efficiency (lowest error rates). however, the key problem for iris-based image and video processing with fpga support used for biometric as well as other applications 171 biometric system design is the image acquisition issue. the acquisition of good quality image of an object of 1,2cm 2 area from the subject at-a-distance and on-the-move is the most challenging task in the whole authorization process. thus, multibiometrics is the tool that allows for fusion of other features that could have been captured during acquisition process. in the case of iris-based systems this can be periocular region: eyebrows and skin texture and color. 2. implementation and development of fisheye distortion correction algorithms 2.1. background nowadays, the majority of camera systems have a field of view of about 60 degrees (fov<60 deg). however, there is a wide market for fisheye lens based and wide angle lens based cameras i.e. gopro hero. these cameras provide larger fovs thanks to specially designed wide angle or fisheye lenses that project much bigger part of the scene onto the image sensor. on the one hand, this type of cameras are used as a toy, but it is worth mentioning that this increase in the field of view is extremely useful in a number of applications ranging from laparoscopic surgery, through rear-view cameras in cars to closed circuit television (cctv) systems [12], [13]. the increase in the fov brings geometric distortions, which make straight lines from the scene to appear as curves in the image plane. in the one hand this ‘artistic’ transformation is accepted when we use a sport camera to record our achievements, but in many applications it is not desired and causes problems for proper interpretation of the scene. our team focuses on research and implementation of novel, on-the-fly algorithms for correcting geometrical distortions in video streams on different systems starting from regular pcs, through mobile devices ending on dsps and fpgas. 2.2. the algorithm the equations for geometrical distortion are well documented and they are as old as cartography. the concept of the algorithm is how to project the sphere on a planar surface. this may be happen only using the trigonometric functions as it is presented below [14]. fig. 6 set of equations to project the sphere on the planar surface [16] 172 a. napieralski et al. hence, the algorithm is well known, but there are always problems with hardware implementations of the above set of equations. for a single image there is a plenty of time to make all the calculations and present the final corrected image. the problem arises when we would like to deal with the high-resolution video at frame rate of i.e. 30 frames per second. then the power needed to make such a calculation is rising proportionally to the number of frames. one of the biggest problems is the algorithm itself and the fact that it uses trigonometric functions. if we make a brief calculation for a hd video we need to make approximately 1920px * 1080px * 30 frames = 62 million trigonometric calculations per second. in principle, the following calculation for each pixel has to be done. fig. 7 block diagram of geometrical correction system as can be seen on the block diagram in fig. 7, there is a need to read and write single pixels to memory. using conventional techniques we need to access external memory index by index in the way given as a result of trigonometric calculation. thus, the access time to memory cell plays the major role. we can use faster memories like ddr5 or even on-chip sram (cache), but it is an expensive solution. 2.3 sample implementation in the first attempt, we built a system based on xilinx spartan vi fpga chip and the aptina mt9p031 image sensor equipped with fisheye lens. the photo of the system is presented below. fig. 8 photo of the real system image and video processing with fpga support used for biometric as well as other applications 173 the internal structure of the image sensor is presented below. one can see that the resolution of camera is 5 megapixels, thus even higher than the hd image described above. fig. 9 image sensor mt9p031 internal architecture [from aptina documentation] we designed and then implemented the correction algorithm [15], [16]. the internal block architecture is presented below. the system contains four main parts:  the front-end frame grabber which acquires the image data from sensor and forms information about the pixels for further processing,  the demosaicer which recalculates the bayer subpixels and forms rgb pixels,  the datamover state machine which is responsible for running the correction algorithm and performing the transfer of pixels from the input image to the output buffer,  the axi datamover which is used to store pixel data in ram memory through axi bus. fig. 10 correction system internal architecture [7] the main performance limit of the above structure is the memory access time. the current research is focused on this issue. 2.4 results as it was described in [15], currently we are able to deal with 3-4 frames per second with hd resolution (720p). the current research is conducted to increase the number of frames which can be processed simultaneously. meantime, we developed opengl shader programs, which allowed us to build a web-based tool for image and video correction 174 a. napieralski et al. which can be accessed online. using powerful machines equipped with high-performance graphic cards, we can deal with medium-resolution video sequences. however, we are looking for more efficient algorithms which can be used with cheaper devices. moreover, we designed the implementation of geometrical distortion algorithm for android os. the preliminary results show that we can process 2-3 frames per second with hd resolution using one core of a mobile arm cpu. when we decrease the resolution we can deal with a higher frame rate. fig. 11 snapshot of web-based implementation of fisheye lens geometrical correction algorithm a sample screenshot from the web-based application is presented in fig. 11 below. on the left panel the fisheye image is presented. the yellow dots show the image being processed. the right panel presents the corrected image using our implementation of the algorithm. 2.5. summary the correction of geometrical distortion is a very old problem, which was not solved efficiently until now. the algorithms base on trigonometric functions, thus it consumes a substantial time and energy to make the computation. during the image/video processing there is a need to have access to random indices in the memory so the burst mode of modern memory systems cannot be used to accelerate pixel read and/or write. the current research of our team is focused on better understanding and finding the regularity in image pixel indexing. intellectual property rights protect the main parts of the presented solution, therefore they were not presented in this paper in details. acknowledgement: the researches presented in the paper were supported by:  funds from the state committee for scientific research granted on the basis of the decision number 1374/t11/2004/27,  funds from the dmcs department granted on the basis of the decision number k25/b.w.2/2009 and k-25/2011/bw/3, image and video processing with fpga support used for biometric as well as other applications 175  funds from the national science centre granted on the basis of the decision number dec2011/01/d/st6/06269,  funds from the national centre for research and development granted on the basis of the decision number lider/027/591/l-4/12/ncbr/2013,  funds from the national centre for research and development (grant number lider/30/110/l3/11/ncbr/2012). references [1] p. jabłoński, r. szewczyk, z. kulesza, a. napieralski, m. moreno, j. cabestany, "automatic people identification on the basis of iris pattern – image processing and preliminary analysis", in proceedings of the 23rd international conference on microelectronics, niš, yugoslavia, 12-15 may 2002, vol. 2, pp. 687–690. [2] r. szewczyk, p. jabłoński, z. kulesza, a. napieralski, m. moreno, j. cabestany, "automatic people identification on the basis of iris pattern -extraction features and classification", in proceedings of the 23rd international conference on microelectronics, niš, yugoslavia, 12-15 may 2002, vol. 2, pp. 691–694. [3] k. grabowski, w. sankowski, m. napieralska, m. zubert, a. napieralski, "iris recognition algorithm optimized for hardware implementation," 2006 ieee symposium on computational intelligence and bioinformatics and computational biology, 2006. cibcb '06., 28-29 sept. 2006, pp.1–5. [4] k. grabowski, w. sankowski, m. zubert, m. napieralska, "reliable iris localization method with application to iris recognition in near infrared light", in proceedings of the international conference mixed design of integrated circuits and system, mixdes 2006, 22-24 june 2006, pp. 684–687. [5] k. grabowski, m. zubert, m. napieralska, a. napieralski, "uncertainty in iris recognition based on texture analysis," in proceedings of the 17th international conference mixed design of integrated circuits and systems,mixdes 2010, 24-26 june 2010, pp.587–592. [6] k. grabowski, a. napieralski, "hardware architecture optimized for iris recognition”, ieee transactions on circuits and systems for video technology, vol. 21, issue 9, pp. 1293–1303, september 2011. [7] j.a napieralski, m.m. pastuszka, w. sankowski, "3d face geometry analysis for biometric identification," in proceedings of the 21st international conference mixed design of integrated circuits & systems, mixdes 2014, 19-21 june 2014, pp. 519–522. [8] p. nowak, "a comparative study on biometric hand identification," in proceedings of the 21st international conference mixed design of integrated circuits & systems, mixdes 2014, 19-21 june 2014, pp. 411–414. [9] w. sankowski, k. grabowski, m. napieralska, m. zubert, "eyelids localization method designed for iris recognition system," in proceedings of the 14th international conference on mixed design of integrated circuits and systems, mixdes 2007, 21-23 june 2007, pp.622–627. [10] w. sankowski, k. grabowski, j. pietek, m. napieralska, m. zubert, "optimization of iris image segmentation algorithm for real time applications," in proceedings of the 16th international conference mixed design of integrated circuits & systems, mixdes 2009, 25-27 june 2009, pp. 671–674. [11] w. sankowski, k. grabowski, m. napieralska, m. zubert, a. napieralski, "reliable algorithm for iris segmentation in eye image". image and vision computing, vol. 28, no. 2, pp. 231–237, 2010. [12] c. hughes, m. glavin, e. jones, p. denny, "wide-angle camera technology for automotive applications: a review", iet intelligent transport systems, vol. 3, no. 1, pp. 19–31, 2009. [13] l. meinel, m. findeisen, m. hes, a. apitzsch, and g. hirtz, "automated real-time surveillance for ambient assisted living using an omnidirectional camera", in proceedings of the ieee international conference on consumer electronics, icce 2014, pp. 396–399. [14] r. andraka, a survey of cordic algorithms for fpga based computers, fpga'98, monterey, california, usa, association for computing machinery,1998 [15] m. michalak, p. sekalski, k. grabowski, s. izydorczyk, "fast fpga-based frame grabber for digital progressive scan image sensors", in proceedings of the 21st international conference mixed design of integrated circuits & systems, mixdes 2014, 19-21 june 2014. [16] j. cłapa, h. błasinski, k. grabowski, p. sekalski, "a fisheye distortion correction algorithm optimized for hardware implementations", in proceedings of the 21st international conference mixed design of integrated circuits & systems, mixdes 2014, 19-21 june 2014. facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. 137-143 https://doi.org/10.2298/fuee2201137o © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper dielectric absorption in pedot:pss capacitors with stainless steel yarn electrodes in textile substrates sheilla atieno odhiambo1,2, gilbert de mey3, carla hertleer1, lieva van langenhove1 1department of textiles, ghent university, ghent, belgium 2department of textiles, moi university, eldoret, kenya 3department of electronics and information systems, ghent university, ghent, belgium abstract. capacitors have been made on textile substrates. stainless steel yarns were used as electrodes. the dielectric material was a mixture of pedot and pss. stainless steel yarns were used as the electrodes. these capacitors are developed to be inserted in wearable textiles, a research field called smart textiles. after charging, a spontaneous discharge was observed lasting for several hours. by connecting a small resistance or even a short circuit for a certain time, it was observed that the voltage starts to rise afterwards when the load resistor or the short circuit was removed. this phenomenon is known as dielectric absorption. it was observed for the pedot:pss cells that the voltage recovery is relatively high as compared to other materials. key words: dielectric absorption, capacitor, pedot:pss, textile. 1. introduction dielectric absorption, also called dielectric relaxation or battery action, is a phenomenon that a capacitor still contains an amount of electric charge even when the electrodes have been short circuited or connected to a resistor for a certain period of time. after removal of the short circuit, the voltage across the capacitor starts to increase. with an ideal capacitor such behaviour is not possible. it turns out that the dielectric layer is able to absorb electrostatic energy and to store it during a limited period of short circuiting. dielectric absorption has been observed in several dielectric materials such as polymers and insulating oxides. a physical explanation is that the dielectric contains polar molecules which will be oriented along the externally applied electric field according to a debye relaxation mechanism [1]. received july 15, 2021; received in revised form september 15, 2021 corresponding author: gilbert de mey department of electronics and information systems, ghent university, technologiepark 126, 9052 ghent, belgium e-mail: gilbert.demey@ugent.be 138 s. a. odhiambo, g. de mey, c. hertleer, l. van langenhove consequently, these dielectrics are lossy, i.e. that the equivalent electric network models always include both perfect capacitors and resistors [2][3][4]. for most materials the relaxation of the voltage after a short circuit is rather small, typically 0.1 % for a dielectric material like sio2 [2]. generally, the relaxation is in the range 0.01 % 10 %. dielectric absorption is a serious problem for electronic circuit design. one has to take into account that some types of capacitors are able to produce an unexpected voltage which may inhibit the normal behaviour of the circuit [3][4]. our research fits into the field of smart textiles, which includes the integration of electronic components into wearable textiles for different applications like medical surveillance or safety [5]. conductors and resistors have been integrated in textiles for interconnection, heating elements and electrodes [6][7][8][9][10]. our research is focused towards capacitors and batteries in textile structures [11][12][13][14]. the purpose is to make a device to store a small amount of electric energy which can also be fully integrated into a textile fabric so that the device is fully wearable. more specifically, a water solution of pedot:pss has been deposited on a textile fabric made from cotton or polyester (pet). more details about the fabrication have been published elsewhere [15]. a photograph of a device is shown in fig.1 fig. 1 photograph of a sample. dimensions are about 5×5 cm2. the black area is the deposited pedot:pss. three stainless steel electrodes are sewed into the substrate. electric conducting yarns made from stainless steel fibers were used as electrodes as shown in fig.1 [15]. three electrodes were inserted. during the measurements either the first and second either the second and third electrode was used. it was observed that these electrodes gave much better results in comparison with ag electrodes used by other authors [16]. pedot:pss is a mixture of two polymers: pedot (3,4ethylenedioxythiophene) and pss (polystyrenesulphonate). an electron can jump from a pedot to a pss molecule so that ionization occurs: pedot+ and pss-. these ions give rise to electric conduction in the solid. a discussion about the energy storage possibilities of these devices can be found in [17]. several experiments have also been carried out in order to understand the physical basics of the conducting mechanism [18][19][20][21]. an intensive search on the web of science using the topics "pedot" and "dielectricabsorption" or "dielectric relaxation" did not reveal any papers. hence, to the best of our knowledge no article could be found related to dielectric absorption in pedot:pss layers. dielectric absorption in pedot:pss capacitors with stainless steel yarn electrodes in textile substrates 139 2. experimental measurements for the experimental measurements the circuit shown in fig. 2 has been used. fig. 2 schematic layout of the measuring circuit the pedot:pss capacitor has been charged at a constant voltage v0 = 1.5 v for a sufficiently long time, around 2 hours by closing the switch s1. the switch s1 was opened and the voltage v(t) was recorded as a function of time with the voltage meter vm. the input resistance of vm was about 10 mω so that its current consumption was always below 150 na. fig.3a shows the decaying voltage v(t) with the label "initial". one remarks a steep decay in the beginning followed by a long period with a very slow voltage decay [15]. after several other measurements, exactly the same experiment was repeated again and plotted in fig.3a with the label "final". it turns out that this curve has a similar shape but the voltage values are higher. this result agrees with reliability experiments carried out on similar samples [22]. it was found that the pedot:pss capacitors are improving during the first 5 to 7 charging/discharging cycles. if more charging/discharging cycles have been applied, the capacitances start to get less efficient [23]. the conclusion is that one cannot assign one single discharge curve to a given device. fig. 3 voltage decay curves of pedot:pss cells, with and without resistive load. (a) general view (b) detailed view of the dielectric absorption. 140 s. a. odhiambo, g. de mey, c. hertleer, l. van langenhove a similar experiment was carried out with a rl = 10 kω load resistor connected to the pedot:pss capacitor. the curve is shown in fig.3a along with a more detailed view in fig.3b. as expected, the discharging voltage is much lower if one compares with the "initial" or the "final" curve. for the load rl = 5 kω , the discharging curve is a little bit below the rl = 10 kω curve. after 360 seconds discharging, the rl = 5 kω was disconnected by opening the switch s2. as can be seen in fig.3b, the output voltage started to increase considerably. the output voltage reached almost 80 % of the values of the "initial" curve. remark that a load resistor of only rl = 5 kω is much smaller than the internal resistance of the pedot:pss cells which has been measured to be around 300 kω. these results are quite different from the results obtained with other dielectric materials, where the recovery is at most 15 % after a short circuiting of only 10 seconds. our result is totally different: even after a load period of 360 seconds, the voltage recovery is almost 80 % of the voltage which would have been obtained without any load resistor. in a second series of experiments, the pedot:pss cell was short circuited (rl = 0 ω) for a certain period by closing the switch s2 (fig.2). the results are shown in fig.4. fig. 4 transient voltages measured with short circuit periods of (a) 19 s, (b) 111 s, (c) 215 s and (d) 721 s each time, the pedot:pss cells were charged to 1.5 v during two hours. after a certain discharge time when only the voltage meter was connected (fig.2), the short circuit was applied intentionally. four tests are shown in fig.4 done with the following short circuiting periods: (a) 19 s, (b) 111 s, (c) 215 s and (d) 721 s. it is remarkable to note that even a long short circuit time of 721 s, which is about 12 minutes, was not enough to completely discharge the pedot:pss cell. moreover, these long short circuit times did not have any negative influence on the cells. the cells could be recharged and discharged again without any problem. dielectric absorption in pedot:pss capacitors with stainless steel yarn electrodes in textile substrates 141 as already mentioned, the pedot:pss cells always show a voltage decay after charging, even when no load resistor was connected. experiments carried out with a load resistor in the range of rl > 100 kω did not provide clear results. the difference between the discharging curves with rl > 100 kω and rl = ∞ were hardly visible. therefore our experiments have been done with lower values: rl = 10 kω, rl = 5 kω and even rl =0. the pedot:pss cells are not perfect capacitors. the self-discharge is clearly visible from the results shown in fig.3. it is not so obvious to evaluate the voltage recovery because the output voltage even decays without any short circuiting. hence, the initial voltage (1.5 v in our experiments) will be used as the reference one. in fig.4 some numerical values for the voltages are shown. if we consider the value of 0.2121 v obtained after a short circuiting period of 721 s (fig.4d), the voltage recovery is found to be 0.212/1.5 = 14 %. for the shorter circuit period of 19 s, one gets 0.804/1.5 = 53.6 % (fig.4a). from the literature voltage recoveries are in the range 0.1 10 %. with our experiments we have shown that much higher values can be obtained using pedot:pss cells. as far to our knowledge, no voltage recovery values higher than 10 % have been reported in the literature. 3. discussion a frequently used model for dielectric relaxation is a parallel connection of several rc networks. when such a circuit is short circuited, all the individual capacitors can only be discharged through the resistors. this explains why still a charge will remain after a certain short circuit period. such a network can also be represented by the following complex dielectric constant, known as the cole-cole model [24]: 𝜀 = 𝜀ℎ + 𝜀𝑙 − 𝜀ℎ 1 + (𝑗𝜔𝜏0)𝛼 (1) which represents a lossy dielectric material, because it has a non-zero imaginary part. it should be noted that this model was used for the first time a long time ago to explain the dielectric behaviour of electrolytes [19]. later on, this model was described in other papers and textbooks as well for several dielectric materials [25][26][27]. this might be an argument that the electric properties of the pedot:pss are also due to mobile ions. the pedot:pss being a mixture of two polymers, pedot and pss, or if charged pedot+ and pss-, it is clear that ionic conduction takes place. the fact that we are dealing with polymers, i.e. long molecules, explains the large time constants observed in the experiments. the parameter α in (1) is related to the variance of the time constant distribution [25]. if α = 1, only one time constant τ0 occurs. for 0 < α <1 a distribution of time constants centered around τ0 will be observed. the smaller the value of α, the wider the distribution will be. the dielectric relaxation observed in the pedot:pss cells, can be explained by the fact that even a short circuiting for a relatively long period is not enough to provide enough time for all the pedot+ and pssions to move back to their equilibrium position, which corresponds to charge neutrality and hence zero output voltage. 142 s. a. odhiambo, g. de mey, c. hertleer, l. van langenhove 4. conclusion electroconductive cells with stainless steel yarns as the electrodes and pedot:pss as the dielectric material have been made on textile substrates. it was found that very high values for the voltage recovery after a short circuit could be observed. this phenomenon known as dielectric absorption, has been detected in several materials but the voltage recovery never exceeded 10 %. in the pedot:pss much higher voltage recoveries have been measured. acknowledgements. s. odhiambo, on leave from the moi university, eldoret, kenya, wants to thank the vlir (flemish interuniversity council) for the financial support for her stay at the university of gent. references [1] a. k. jonscher: "dielectric relaxation in solids", chelsea dielectric press, london, 1983. [2] s. r. ekanayake, m. b. cortie and m. j. ford, "design of nanocapacitors and associated materials challenges", current applied physics, vol. 4, pp. 250–254, 2004. [3] c. iorga, "compartemental analysis of dielectric absorption in capacitors", ieee transactions on dielectrics and electrical insulation, vol. 7, pp. 187–192, 2000. [4] s. westerlund and l. ekstam, "capacitor theory", ieee transactions on dielectrics and electrical insulation, vol.1, pp. 826–839, 1994. [5] l. van langenhove and c. hertleer, "smart clothing: a new life", international journal of clothing science and technology, vol. 16, 2004. [6] m. irwin, d. roberson, r. olivas, r. wicker and e. macdonal, "conductive polymer-coated threads as electrical interconnects in e-textiles", fibers and polymers, vol.12, pp. 904–910, 2011. [7] o. kayacan, e. bulgun and o. sahin, "implementation of steel-based fabric panels in a heated garment design", textile research journal, vol. 79, pp. 1427–1437, 2009. [8] l. rattfalt, m. linden, f. hult, l. berglin and p. ask, "electrical characteristics of conductive yarns and textile electrodes for medical applications", medical & biological engineering & computing, vol. 45, pp. 1251–1257, 2007. [9] j. lesnikowski and m. tokarska, "modeling of selected electric properties of textile signal lines using neural networks", textile res journal, vol. 84, pp. 290–302, 2014. [10] i. kazani, c. hertleer, g. de mey, a. schwarz, g. guxho and l. van langenhove, "electrical conductive textiles obtained by screen printing", fibres & textiles in eastern europe, vol. 20, pp. 57–63, 2012. [11] j.a. gu, s. gorgutsa and m. skorobogatiy: "soft capacitor fibers for electronic textiles", applied physics letters, no. 115006, 2010. [12] l. hu, "lithium-ion textile batteries with large areal mass loading", advanced energy material, online: wiley, 2011. [13] k. jost, c. perez, j.k. mcdonough, v. presser, m. heon, g. dion and y. gogotsi, "carbon coated textiles for flexible energy storage", energy & environmental science, vol. 4, pp. 5060–5067, 2011. [14] a. laforgue, "all-textile flexible supercapacitors using electrospun poly(3,4-ethylenedioxythiophene) nanofibers", journal of power sources, vol. 196, pp. 559–564, 2011. [15] s. 0dhiambo, g. de mey, c. hertleer, a. schwarz and l.van langenhove, "discharge characteristics of poly(3,4-ethylene dioxythiophene): poly(styrenesulfonate) (pedot:pss) textile batteries; comparison of silver coated yarn electrode devices and pure stainless steel filament yarn electrode devices", textile research journal, vol. 84, pp. 347–354, 2014. [16] r. bhattacharya, m. de kok and j. zhou, "rechargeable electronic textile battery", applied physics letters, vol. 95, no. 223305, 2009. [17] sa. odhiambo, p. fiszer, g. de mey, c. hertleer, i. nuramshani, l. van langenhove, a. napieralski, "the electric energy stored in a pedot:pss capacitors on textile substrate: limits and possibilities", international journal of clothing science and technology, vol. 30, pp. 808–816, 2018. [18] i. nuramdhani, at. gokceoren, sa. odhiambo, g. de mey, c. hertleer, l. van langenhove, "electrochemical impedance analysis of a pedot:pss based textile energy storage device", materials, vol. 11, no. 48, 2018. dielectric absorption in pedot:pss capacitors with stainless steel yarn electrodes in textile substrates 143 [19] i. nuramdhani, sa. odhiambo, c. hertleer, g. de mey, l. van langenhove, "electric field effect on charge-discharge characteristics of textile-based energy storage devices. in search of the underlying mechanism", tekstilec, vol. 59, pp.162–167, 2016. [20] i. nuramdhani, g. de mey, m. widodo, l. van langenhove, "ionic shot noise in an electrochemical capacitor system made of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) film and silver coated polybenxazolestainless steel electroces on textile fabrics", textile research journal, vol. 89, pp. 1276–1285, 2019. [21] i. nuramdhani, j. manoj, p. samyn, p. adriaensens, b. malengier, w. deferme, g. de mey, l. van langenhove, "charge discharge characteristics of textile energy storage devices having different pedot:pss ratios and conductive yarns configurations", polymers, vol. 11, no. 345, 2019. [22] s. odhiambo, g. de mey, c. hertleer and l. van langenhove, "reliability testing of pedot:pss capacitors integrated in textile fabrics", eksploatacja i niezawodnosc maintenance and reliability, vol. 16, pp. 440–444, 2014. [23] k. cole and r. cole, "dispersion and absorption in dielectrics: i alternating current characteristics", journal of chemical physics, vol. 9, pp. 341–351, 1949. [24] r. fuoss and j. kirkwood, "electrical properties of solids: dipole moments in polyvinyl chloride diphenyl systems", journal of the american chemical society, vol. 63, pp. 385–394, 1941. [25] a. dekker, "solid state physics", mc millan, london, 1969, pp. 150–154. [26] a. van der ziel, "solid state physical electronics", mc graw hill, 1975, pp. 488–490. [27] a. k. jonscher, "dielectric relaxation in solids", journal of physics d: applied physics, vol.32, pp. r57– r70, 1999. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 31, no 3, september 2018, pp. 425-445 https://doi.org/10.2298/fuee1803425d electric field modeling and analysis of ehv power line using improved calculation method  rabah djekidel, sid ahmed bessedik, abdechafik hadjadj laboratory for analysis and control of energy systems and electrical systems lacosere, laghouat university (03000), algeria abstract. this paper aims is devoted to modeling and simulation of electric field created by ehv power transmission line of 275 kv using an efficient hybrid methodology, the charge simulation method (csm) with the simplex simulated annealing (simpsa) algorithm in order to find the optimal position and number of fictitious charges used in csm for an accurate calculation. various factors that affect the electric field intensity were analyzed; it is found that the influence of the conductor sagging is clearly remarked, the maximum electric field strength at 1 m above the ground level recorded at mid-span point of the power line is 3.09 kv/m, in the proximity of the pylon, the maximum value is significantly reduced to 1.28 kv/m. the configuration type of the transmission line (single or double circuit) and the arrangements of phase conductors on double circuit pylons have a significant effect on the levels of electric field around the transmission line. for a single circuit, the triangular configuration provides the lowest maximum value of electric field. for a double circuit, the inverse phase arrangement (abc-cba) or low-reactance phasing produces the lowest maximum value of electric field. the resulting maximum electric field levels were found below the exposure values set by the icnirp and irpa standards for both occupational and general public. the simulation results of electric field are compared with those obtained from the comsol 4.3b multiphysics software, a fairly good agreement is found. key words: catenary geometry, charge simulation method (csm), electric field, ehv power line, simplex simulated annealing (simpsa) received october 7, 2017; received in revised form march 19, 2018 corresponding author: djekidel rabah laboratory for analysis and control of energy systems and electrical systems lacosere, laghouat university (03000), algeria (e-mail: rabah03dz@live.fr) 426 r. djekidel, s. bessidek, a. hadjadj 1. introduction over the years, electricity has improved the conditions of human life; it plays a key role in responding to basic human needs. however, despite all its advantages, electricity has many negative effects on human health identified. as energy needs increase with the rapid growth of the human population, leading to adoption of electric transport systems with very high voltage levels and accelerated the creation of new transmission power lines using single circuit or double circuit near residential areas. the electric and magnetic fields at extremely low frequencies generated by the lines of the transmission network have assumed great importance in recent years, because of growing concern about the potential effects of these fields on human health and the environment. exposures to these generated fields induce a current inside human bodies that interferes with those of the body and can, if sufficiently intense, cause harmful biological effects with important implications for human health. in the last years, several publications have been made for the calculation and measurement of very low frequency electric and magnetic fields (elf) created by power transmission lines [1-5], based on the results and recommendations reported by these research studies. a number of national and international standards have been established, to define the limits for occupational and public exposure of electric and magnetic fields at very low frequency [6-8]. in parallel, a wide variety of software using different numerical techniques have been developed for modeling and simulation of electric and magnetic fields in both 2d and 3d analysis. the international organizations responsible for providing guidance and advice on the health hazards of non-ionizing radiation exposure officially recognized by the world health organization (who) are the international commission against non-ionizing radiation (icnirp) and the international radiation protection association (irpa), usually at a frequency of 50 hz, these organizations recommend an exposure limit (24 hours), for the general public are of the order of 5 kv/m for the electric field and 100 µt for the magnetic field, as regards the occupational exposure medium, these recommendations are 10 kv/m and 500 µt, respectively [6-8]. therefore, it is very important to assess the levels of electric and magnetic fields generated by these very-high-voltage transmission lines, in order to protect public health, environmental and electrical equipments [9,10]. in view of the above, the purpose of this paper is to analyze the electric field levels generated by the high voltage transmission lines (hvtl) in a steady state condition, using a novel modeling approach that combines charge simulation method (csm) with simplex simulated annealing (simpsa). the charge simulation method, due to its favorable characteristics, such as simplicity and ease of programming, the execution speed, has been very commonly used successfully in many studies to solve a variety of analysis problems of the electric field in high voltage electrical insulation systems [11-20]. to improve the performance of this technique, aiming to increase the calculation accuracy, it seems advisable to use one of the optimization techniques as the simplex simulated annealing (simpsa) algorithm in combination with this method in order to determine the optimal number and position of simulation charges. this algorithm shows good robustness and accuracy in arriving at the global optimization of difficult non-convex highly unconstrained and constrained functions; it combines the downhill simplex method (dhs) with simulated annealing algorithm (sa) [21,22]. it electric field modeling and analysis of ehv power line using improved calculation method 427 should be noted that this calculation takes into account the effects of the catenary line, where the conductor sag depends on the individual characteristics of the electrical line and environmental conditions, this effect is rarely considered in the literature, because most often it is assumed negligible. usually, they use in the calculation method the notion of the average height of the electrical line. the simulation results will be compared with those obtained using comsol multiphysics 4.3b based on the finite element method. 2. model of overhead power lines the conductors of an overhead power line are not at all points at the same height along the span of this line (longitudinal axis). in fact, they regularly describe a catenary, where the sag depends on the individual characteristics of the line and environmental conditions. fig. 1 depicts the basic catenary geometry for a single conductor line [18,23,24]. z y x l s +l/2 -l/2 hmax hmin catenary geometry fig. 1 the basic catenary geometry for a single-conductor line the equation of the catenary shape of conductor placed in the (yz) plane is given by [25]. 2( ) 2 sinh 2 min z y z h          (1) where z is the longitudinal position of the conductor about z axis, for a symmetrical line, you normally choose z = 0 at the mid-span; α is the solution of the transcendental equation, with. 2sinh ( ) 2 4 s l    (2) to calculate the height of the electrical line along z axis in a span length, the following equation can be used [25]. 428 r. djekidel, s. bessidek, a. hadjadj 2 min 2 ( ) 4 s y z h z l          (2) some researchers, in the electric field calculation in the vicinity of power lines assumes that the conductors are horizontal of infinite length, parallel to a flat ground and parallel with each other, and the sagging due to the weight of conductors is neglected, taking into account an average height between the maximum height and the height minimum of the power line [18]. the average height aveh is given by the following expression. max 2 3 aveh h s         (3) where hmin is the minimum height of the line; hmax is the maximum height; s is the sag of the conductor; l is the length of the power line in one span. 3. charge simulation method (csm) the basic principle of this method is very simple. if several discrete charges of any type are present in a region, the electrostatic potential at any point can be found by the superposition of the potentials resulting from the individual charges as long as this point, this potential can be given as follows [11-13]. 1 n i ij j j v p q    (4) where n is the number of fictitious charges and pij called the potential coefficient, means the potential at point i caused by a unit charge of qj. once the types of simulation charges and their positions are defined, the simulation charges of conductors are replaced by fictitious charges placed inside the conductor, when this procedure is applied to n contour points, this leads to a linear system of n equations for n unknown charges [11-13]. 1 ij j ci nn n n p q v (5) where pij is the potential coefficients matrix; qj is the column vector of fictitious simulation charges; vci is the column vector of known potentials at the contour point (boundary conditions). after determining the values of the simulation charges by solving the matrix system shown in equation 5, it was necessary to check all the calculated charges by choosing new points located on the contour (check points), the new potential vvi is calculated at these checkpoints, the error tolerance is checked. if this value is lower than the simulation accuracy, the potential and electric field at any point can be calculated, if not, it will be necessary to repeated the all calculations by changing the number and/or the locations of simulation charges [16-19]. electric field modeling and analysis of ehv power line using improved calculation method 429 :contour points :simulation charges :check points r1: real radius of the conductor r2: fictitious radius of the conductor r1 r2 y x y0 x0 4. electric field calculation the conductor of an electrical line is usually represented by an infinite line charges because its length is much greater than the other dimensions, these charges are placed inside the periphery of this conductor. in the charge simulation method (csm), the effect of the ground is simulated by an image charge for each conductor. this ensures that potential at any point on the ground plane is zero. using the image technique, each conductor of the line is represented by a positively charged line and a negatively charged image conductor. fig. 2 arrangement of the simulation charges and the contour points of conductor the arrangement of fictitious charges and contour points in the conductors of the power line is shown in fig. 2. the coordinates of these points are calculated using the following formulas [18,21]. 0 0 2. cos ( 1) 2. sin ( 1) k k k k x x r k n y y r k n                     (6) where r= {r1 if k=i, r2 if k=j} ; x0 is the heights of conductors above ground; y0 is the horizontal coordinates of conductors. for an infinite length of charge type, the potential coefficient is given in equation below [18,21]. 2 2 2 2 0 ( ) ( )1 (2. ) ( ) ( ) i j i j ij i j i j x x y y p ln x x y y               (7) where (xi, yi) are the coordinates of contour points; (xj, yj) are the coordinates of simulation charges. for a cartesian coordinate system, the magnitude of the total electric field at the desired point is calculated by the summation of the components. 430 r. djekidel, s. bessidek, a. hadjadj 2 2 1 1 n n t xi j yi j j j e f q f q                    (8) where fxi, fyi are the field intensity coefficients between the contour points and the simulation charges qj, they are given below. , i i ij ij x y p p f f x y       (9) in this analysis of electric field created by power transmission line, the catenary form of the overhead power line conductors (conductor sag) is taken into account; this 3d quasi-static analysis can supply to good electric field estimation. it should be noted that in this analysis, the influence of the towers and metallic objects encountered which act as screens is neglected. 5. simplex simulated annealing (simpsa) the simplex simulated annealing (simpsa) algorithm was developed for the global solution of optimization problems. it is based on the original sa that was proposed for discrete optimization problems. simpsa combines the original simulated annealing algorithm (metropolis algorithm) with the non-linear simplex algorithm (simplex downhill search). simulated annealing algorithm employs a stochastic generation of solution vectors and employs similarities between the physical process of annealing and a minimization problem. this algorithm shows good robustness and accuracy in arriving at the global optimum of difficult non-convex highly constrained functions [21,22]. due to the application of the simplex downhill search, a simplex with d + 1 vertex for d decision variable is used. the algorithm starts with an arbitrary solution in the search space, a new solution is created according to the metropolis algorithm and the fitness function values are calculated for both solutions, the difference between these two points is calculated, the better function evaluation is accepted and becomes the starting point for the next iteration; otherwise a new point is accepted with the boltzmann probability of intexp (/ . )bp e k t  , where e is the difference of fitness function values, kb is boltzmann’s constant, and tinit is the annealing temperature. for the assumed acceptance ratio ar, the initial annealing temperature tinit is estimated by [26-28]. * int. 1 2 1 2 . e t r m m e a m m    (10) where m1 and m2 are the number of successful and unsuccessful reflections, respectively, *e is the average increase in objective function values for m2. in the preliminary generations, the temperature value is remains high, but it is decreased during next generations in order to reduce the acceptance probability. the cooling schedule will then continue with estimated tinit by equation (10) as [26-28]. electric field modeling and analysis of ehv power line using improved calculation method 431 ( ) ( 1) ( ) ln(1 ) 1 3. cool t g t g t g r       (11) where rcool is the cooling rate and σ is the standard deviation of all solutions at t(g) (current temperature). the abovementioned steps are repeated, and the process is continued with a sufficient number of successful generations for the current temperature. the temperature is then gradually reduced using equation (11) and the entire process is repeated until the stopping criterion is met [26-28]. the fitness function used for optimization is based on the accuracy of the calculation method, which is obtained by evaluating the relative error between the potential calculated by the check contour charges and the real potential applied on active conductors. the fitness function (ff) has the form 1 1 .100 c i i i n c v ic c v v ff n v    (12) where vci is the exact potential to which is subjected the conductors and vvi is the actual voltage of the check charges; nc is the total number of check points. the main steps of the proposed ga–csm algorithm are given as follows [26-28]. 1  simpsa generates initial solution with high temperature. 2  at each step, a new solution is created; the csm will evaluate the objective function values for both points. 3  compare the two solutions using the metropolis criterion. 4  steps 2 and 3 are repeated until system reaches equilibrium state. 5  decrease temperature and repeat the above steps, until the stopping criteria are met. 6. finite element method (fem) the finite element method (fem) is a numerical technique, used to find approximate solutions of partial differential equations, reducing the latter to a system of algebraic equations. the great advantage of this computational technique consists in the fact that the implementation in a code of iterative algorithms, relatively simple, allows having solutions, practically exact, with an acceptable approximation, of very complex problems, with calculation time considerably reduced. the finite element analysis of any problem involves basically four steps. those are: (a) discrediting the solution region into a finite number of sub-regions or elements, (b) deriving governing equations for a typical element, (c) assembling of all elements in the solution region, and (d) solving the system of equations obtained [29,30]. in bi-dimensional (2d) problems, the energy in an electrostatic field in cartesian coordinates (x, y) has the functional expression [30,31]. 22 2 1 1 . . 2 2 e s s v v w e ds ds x y                        (13) 432 r. djekidel, s. bessidek, a. hadjadj radius 10 mm radius 10 mm 10m 20 m 26 m 0,3m s t r 7 m in fem, the volume of the proposed region is divided into "m" small triangular elements where their sides form a grid with "ne" nodes. the potential function is approximated by [31,32]. ne 1 ( ) ( )i i i v r v f r    (14) where vi is the electric potential of node i, r is any point on the proposed region, fi(r) represents the shape function having the feature that any fi(r) is equal to unit at the location of node i and zero at the other nodes. ( ) (1 for ), (0 for ) i f r i j i j   (15) substituting equation (15) into equation (14), it is obtained the approximate energy w, which is minimized under the following conditions. =0 1, 2 .....e i w i n v    (16) a system of equations whose unknowns are the electric potential values in the nodes of the mesh is obtained. the electric field intensity within each element is obtained using the gradient expression as follows. ne 1 ( . ) m i m i i i e v v f      (17) fig. 3 275 kv single circuit three phase overhead transmission line in the present work, a three-phase ehv overhead electrical line of 275 kv with earth wires is considered, with the arrangement and the geometric coordinates, referred to the suspension pylon (height at tower), as shown in fig. 3, each phase of the transmission line consists of a bundle of two conductors separated by 30 cm with a radius of 10 mm, the ground wire radius is selected as 10 mm, the span length is 300 m, the sag of the conductors s=8 m, and s=6 m for the ground wires. the system of phase voltages is considered electric field modeling and analysis of ehv power line using improved calculation method 433 symmetrical and of direct (positive) succession with a nominal frequency of 50 hz, the earth is assumed to be homogeneous with a resistivity of 100ω.m. fig. 4 different configurations of single circuit lines (1) horizontal, (2) vertical (3) triangular, (4) inverted triangular fig. 5 different configurations of double circuit lines (1) vertical, (2) triangular (3) inverted triangular 6. results and discussions after choosing the type of fictitious charges as infinite line type, the simplex simulated annealing algorithm (simpsa) is used to find an appropriate arrangement (number and location) of both fictitious charges and contour points of charge simulation method (csm) for accurate calculation of electric field. the preferred parameters settings for simpsa algorithm taken from [33-35] and search intervals of the variables for the charge simulation method (csm) are summarized in table 1. 434 r. djekidel, s. bessidek, a. hadjadj table 1 charge simulation method and simplex simulated annealing parameters algorithm+csm number of max generation (iteration) =80 simpsa cool_rate=10,min_cooling_factor=0.9,initial_acceptance_ratio=0.95 csm range of fictitious charges= 4–30. range of fictitious radius for phase conductor =0.01–0.05 range of fictitious radius for ground wire =0.001–0.009 after multiple runs for the optimization of the fitness function, once the algorithm terminates execution, the best fitness function value and the optimal parameter values are obtained. the optimal values converged by this algorithm, which are incorporated into the proposed method, are summarized in table 2: table 2 optimum values of csm fictitious charges number fictitious conductor radius [m] ff value phase conductor 12 0.016 3.64e-12 ground wire 30 0.0045 the convergence of the fitness function (ff) mentioned above in equation (12) with number of iterations is shown in fig. 6. the best value for the fitness function is (3.64e12) and is practically achieved approximately after 75 iterations. 0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 x 10 -10 iteration number f it n e ss f u n c ti o n fig. 6 convergence of fitness function used in simpsa algorithm the search process of this algorithm at successive iterations with optimal solutions are represented in figs. 7 and 8 respectively, where it becomes clear that the algorithm converge quickly to these values. electric field modeling and analysis of ehv power line using improved calculation method 435 0 10 20 30 40 50 60 70 80 12 14 16 18 20 22 24 26 28 30 n u m b e r o f fi c ti ti o u s c h a r g e s fo r l in e c o n d u c to r s iteration number phase conductor ground wire fig. 7 convergence of the optimum values of fictitious charges number on the conductor 0 10 20 30 40 50 60 70 80 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 iteration number f ic ti ti o u s r a d iu s fo r l in e c o n d u c to r s [m ] phase conductor ground wire fig. 8 convergence of the optimum value of fictitious conductor radius fig. 9 shows the lateral profile of the electric field calculated at 1 m above ground level at mid-span length and pylon foot in different points within the right of way. generally, it is observed that this intensity has a lower value in the centre of the power line, and then increases to a maximum value near under the lateral conductor, from this point; it decreases gradually as the lateral distance from the power line center increases. it appears clear from this figure that the electric field profile is symmetric around the middle conductor. the most important result which the electric field strength at the mid-span length is significantly higher to that at the pylon (points of suspension), this is due to the effect of the height difference of the conductors above ground level. consequently, since the suspension height of the conductors above the ground is minimal, the value of the electric field is very high. 436 r. djekidel, s. bessidek, a. hadjadj -50 -40 -30 -20 -10 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 lateral distance [m] e le c tr ic f ie ld [ k v /m ] at mid-span at pylon foot average height fig. 9 electric field profile at mid-span and pylon foot calculated at 1m above the ground for the average height, the maximum calculated electric field value represents the average value between the maximum value obtained at mid-span and that at the pylon foot. this assumption does not reflect the actual situation of the power line. the longitudinal profile of the electric field at 1 m above the ground level shown in fig.10 illustrates very well this observation, the electric field is greatest at mid-span (3.09 kv/m), as the location of the electric field profile approaches the pylon in both directions, the electric field gradually decreases to a minimum value (1.28 kv/m), the electric field near the pylon is much lower than at mid-span. for the average height, the electric field strength at 1 m above ground level is 2.2 kv/m; this value remains constant along the span of the power line. this shows that the use of the conductor sagging in the electric field calculation is a very practical way of modeling the real shape of the power line; it plays a considerable role in the determination of the real values of the electric field. it should be noted that the maximum peak values of the electric field obtained are well below the limits prescribed by the icnirp and irpa international standards. fig.11 shows the three-dimensional profile of the electric field over a right of way equal to 50 m either side of the power line center and a span length between the suspension pylons of 300 meters. the values of the higher electric fields exist only in a small area near the mid span, and then decrease rapidly towards the pylons and even more rapidly away from the side conductors. fig.12 describes the mapping of the electric field intensity, in an area defined by the height of the conductors, and the axis of the lateral distance along the corridor. it may be interesting to note that the concentrated level of the electric field is produced around the phase of the conductor surface; the electric field gradually decreases with the lateral distance from the power line center in both directions of the corridor. electric field modeling and analysis of ehv power line using improved calculation method 437 -150 -100 -50 0 50 100 150 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 longitudinal span [m] e le c tr ic f ie ld [ k v /m ] sagging effect average height fig. 10 longitudinal electric field profile calculated at 1m above the ground -200 -100 0 100 200 -100 -50 0 50 100 0 1 2 3 4 longitudinal span [m]lateral distance [m] e le c tr ic f ie ld [ k v /m ] fig. 11 three-dimensional (3d ) electric field profile calculated at 1 m above the ground in the following, it should be mentioned some factors which may influence the value of the electric field. the effect of varying the conductor’s height and the phase spacing is shown in fig.13. an increase in the conductor height above the ground (clearance between conductor and ground) causes a significant reduction in the electric field value. an increase of the spacing between phases provokes a slight increase in the strength of the electric field. 438 r. djekidel, s. bessidek, a. hadjadj lateral distance [m] c o n d u c to r s h e ig h t [m ] -40 -30 -20 -10 0 10 20 30 40 0 5 10 15 20 25 30 fig. 12 mapping of the electric field generated by the single-circuit 275 kv power line at mid-span length 5 6 7 8 9 10 11 12 13 14 15 0 2 4 6 8 10 12 distance/height [m] e le ct ri c fi el d [ k v /m ] spacing between conductors height of conductors fig. 13 electric field profile calculated at 1m above the ground as a function of the conductor height and the spacing between the conductors fig.14 illustrates the effect of changing the observation point height of electric field calculation above ground, so it can be seen that the increasing in the calculation point height above ground level can lead as a first step to a small increase in the electric field up to a certain height of 8 m, from this height, the rise becomes sudden. it can be concluded that the amplitude of the electric field is the highest in the immediate vicinity of the surface of the phase conductors and gradually decreases as it goes towards the ground. fig.15 shows the effect of bundle phase conductors on the value of the electric field, as seen in this figure, the electric field intensity is slowly increased if the numbers of subconductors per phase are increased. electric field modeling and analysis of ehv power line using improved calculation method 439 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 observation point height [m] e le c tr ic f ie ld [ k v /m ] fig. 14 electric field profile as a function of the observation point height above ground -50 -40 -30 -20 -10 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 lateral distance [m] e le c tr ic f ie ld [ k v /m ] n=1 n=2 n=3 n=4 n=8 fig. 15 electric field profile as a function of the bundle conductors electric field profile for different single circuit phase configurations (see fig.4) is shown in fig. 16. it can be seen that the horizontal configuration produces the higher maximum electric field than other all configurations due to all conductors being close to the ground level, and on the other hand, the triangular configuration produces the lowest maximum electric field due to better cancellation effect of the line voltages. 440 r. djekidel, s. bessidek, a. hadjadj -50 -40 -30 -20 -10 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 lateral distance [m] e le c tr ic f ie ld [ k v /m ] horizontal line vertical line triangular line inverted triangular line fig. 16 lateral electric field profile calculated at 1m above the ground for different phase configurations of single-circuit 275 kv transmission line for various double circuit configurations lines (see fig. 5), for the same phasing (abcabc), the lateral distribution of electric field is illustrated by fig.17. typically, one can observe that the triangular configuration gives lower maximum electric field than the other configurations in the immediate vicinity of the power line center into an interval between [-7,+7] m, for a distance between 7 and 30 m ±[7-30], the vertical configuration is the preferred configuration, within this range the values obtained indicate a significant reduction in the electric field strength. -50 -40 -30 -20 -10 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 lateral distance [m] e le c tr ic f ie ld [ k v /m ] vertical line triangular line inverted triangular line fig. 17 lateral electric field profile calculated at 1 m above the ground for different phase configurations of double-circuit 275 kv transmission line electric field modeling and analysis of ehv power line using improved calculation method 441 in double circuit overhead power line, the phase sequence arrangement has a significant influence on the electric field intensity; it is highly possible to adjust the position of the phase order to reduce the electric field under the power line to a lower level. as an example, the electric field for different phase arrangements in a vertical double circuit line with the same parameters is illustrated in fig. 18. as can be seen in this figure, the inverse phase arrangement (abc-cba) or low-reactance phasing gives the lowest value of electric field for the different points along the power line corridor, because of the best electric field cancellation caused by the phaseshift between phases, while the phase arrangement (abcacb) produces a higher electric field than all other arrangements of phase conductors. -50 -40 -30 -20 -10 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 lateral distance [m] e le c tr ic f ie ld [ k v /m ] abc-abc abc-acb abc-bac abc-bca abc-cab abc-cba fig. 18 comparison of electric field in different phase’s arrangement for double circuit vertical line 275 kv fig. 19 finite element discretization of the study domain given in fig. 3 442 r. djekidel, s. bessidek, a. hadjadj in order to validate the adopted method in this study, the comsol multiphysics software (version 4.3b) specializing in electromagnetism numerical simulation based on the finite element method (fem) can be used to simulate and evaluate the electric field around the overhead power lines. fig. 20 electric field profile at mid-span length calculated at 1m above the ground using comsol 4.3b software fig. 21 electric field profile at pylon foot calculated at 1m above the ground using comsol 4.3b software electric field modeling and analysis of ehv power line using improved calculation method 443 the electrostatic module was appropriately chosen for this computational work to solve and analyze this model in 2d dimensional space. the mesh using linear triangular elements generated by this software in the study domain with the defined settings of the system is shown in fig. 19. figs. 20 and 21 respectively, show the electric field distribution at mid-span length and pylon foot under the hv power line at 1 m above the ground level using the comsol 4.3b software. it can be seen that the electric field under the middle conductor is less intense, and then it increases to a maximum intensity nearly under the lateral conductors. as the distance from this point increases, the electric field strength decreased quite rapidly. -50 -40 -30 -20 -10 0 10 20 30 40 50 0 500 1000 1500 2000 2500 3000 3500 4000 lateral distance [m] e le c tr ic f ie ld [ k v /m ] csm+simpsa (mid span) csm+simpsa (pylon foot) comsol 4.3b (mid span) comsol 4.3b (pylon foot) fig. 22 comparison of electric field levels between the proposed method and comsol 4.3b software the comparison of the electric field results obtained by the proposed method with those simulated from comsol 4.3b software is shown in fig. 22. these results are in good agreement; the graphs of two figures are approximately superposed, the maximum error value is not significant; it does not exceed the value of 4.8%. 7. conclusion in this study, a novel optimized approach that couples the simplex simulated annealing algorithm (simpsa) and the charge simulation method (csm) has been presented. the adopted algorithm offers efficiency and accuracy for determination of the optimal position and number of fictitious charges. accurate results on the 3d quasi-static analysis of electric field created by an ehv overhead power line have been obtained. from the results, it is clear that the electric field intensity is less intense under the middle phase conductor and increases to peak intensity near under the side phase conductor; then decreases with increasing the lateral distance. it has also been found that the electric field depends on several factors, such as the spacing between two adjacent conductors and conductor height above the ground, the type of 444 r. djekidel, s. bessidek, a. hadjadj lines, single or double circuit. for double circuit lines, it is possible to adjust the phases in an appropriate manner in order to achieve a significant reduction of the electric field. the most important parameter is the influence of the conductor sag; it is noted that the value of the electric field at mid-span length is much higher than that at the pylon foot. the obtained results were compared with those obtained from the comsol 4.3b software. the simulation results are almost identical and are visually superimposed; the comparison is satisfying enough and it sufficient to validate the combined method. references [1] ch. j. portier, m.s. wolfe, "assessment of health effects from exposure to power-line frequency electric and magnetic fields," working group report, niehs and emfrapid, august 1998. [2] the elf working group, health effects and exposure guidelines related to extremely low frequency electric and magnetic fields, the federal provincial territorial radiation protection committee, canada, january 2005. [3] t. keikko, "technical management of the electric and magnetic fields in electric power system," technical report, finland, 2003. [4] cigre, "electric and magnetic fields produced by transmission systems," description of phenomena practical guide for calculation, wg 36-01, paris 1980. [5] report, "a review of the potential health risks of radiofrequency fields from wireless telecommunication devices," the royal society of canada, rsc.epr 99-1, march 1999. [6] icnirp, " international commission on non-ionizing radiation protection, “guidelines for limiting exposure to time-varying electric and magnetic fields (1hz to 100 khz)," health physics, vol. 99, no.6, pp. 818–836, 2010. [7] iarc, "non-ionizing radiation, part 1: static and extremely low-frequency (elf) electric and magnetic fields,” iarc monographs on the evaluation of carcinogenic risks to humans," vol. 80, pp.1-395, 2002. [8] who, "extremely low frequency fields, environmental health criteria monograph, " no. 238, who press, geneva, switzerland, 2007. [9] abstract book, "international conference on electromagnetic fields, bio-effects to legislation", ljubljana, slovenia, november 2004. [10] review , statement of the international evaluation committee to investigate the health risks of exposure to electric, magnetic and electromagnetic fields, the italian ministers of environment, health and telecommunication, italy,2002. [11] h. singer, h. steinhigler, p. weiss, "a charge simulation methods for the calculation of high voltage fields," ieee trans on power applicat, vol. pas-93, pp. 3660-3668, 1974. [12] t. takuma, "charge simulation method with complex fictitious charges for calculating capacitive resistive fields," ieee trans on power apparatus and systems, vol. pas-i00, no.11, pp. 4665-4672, november 1981. [13] n.h. malik, "a review of the charge simulation method and its applications," ieee trans on electrical insulation, vol. 24, no.1, pp.3-20, feb 1989. [14] s. chakravorti, p. k. mukherjee, "efficient field calculation in three-core belted cable by charge simulation using complex charges," ieee trans on electrical insulation, vol. 27, no. 6, pp. 1208-1212, 1992. [15] x. m. liu, y. d cao, e. z. wang, "numerical simulation of electric field with open boundary using intelligent optimum charge simulation method," ieee transactions on magnetics, vol. 42, no. 4, pp.1159-1162, april 2006. [16] d. himadri, "implementation of basic charge configurations to charge simulation method for electric field calculations," international journal of advanced research in electrical, electronics and instrumentation engineering, vol. 3, no.5, pp. 9607-9611, may 2014. [17] r. m. radwn, m. m. samy , "calculation of electric fields underneath six phase transmission lines," journal of electrical systems, vol.12, no. 4, pp.839-851, 2016. [18] r. djekidel, d. mahi, "effect of the shield lines on the electric field intensity around the high voltage overhead transmission lines," international journal of modeling, measurement and control a, amse journals, series, modelling a, vol.87, no. 1, pp. 1-16, 2014. [19] m. m. samy, a. m. emam, "computation of electric fields around parallel hv and ehv overhead transmission lines in egyptian power network," in proceedings of the ieee, international conference on http://scholar.google.fr/scholar?cluster=10916841630457612781&hl=fr&as_sdt=0,5&sciodt=0,5 http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.m.%20m.%20samy.qt.&newsearch=true http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.a.%20m.%20emam.qt.&newsearch=true http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=7966856 electric field modeling and analysis of ehv power line using improved calculation method 445 environment and electrical engineering and ieee industrial and commercial power systems europe, italy, 2017, pp. 1 – 5. [20] r. djekidel, a, choucha, a, hadjaj, "efficiency of some optimization approaches with the charge simulation method for calculating the electric field under extra high voltage power lines," iet generation, transmission and distribution , vol. 11, no. 17, pp.4167 – 4174, 2017. [21] m. f. cardoso, r. l. salcedo, s. f. de azevedo, "the simplex-simulated annealing approach to continuous non-linear optimization", computers & chemical engineering, vol. 20, no. 9, pp. 1065-1080, sep 1996. [22] m. e. cardoso, r. l. salcedo, s. f. azevedo, d. barbosa, "a simulated annealing approach to the solution of minlp problems", computers & chemical engineering., vol. 21, no. 12, pp. 1349-1364, 1997. [23] a. v. mamishev, r. d. nevels, and b. d. russell , "effects of conductor sag on spatial distribution of power line magnetic field," ieee trans on power delivery, vol. 11, no. 3, pp. 1571-1576, july 1996. [24] m.p.arabani, b.porkar, s.porkar, "the influence of conductor sag on spatial distribution of transmission line magnetic field," cigre, paper b2–202, paris, 2004. [25] v. phan tu, j. tlusty," the induced magnetic field calculation of three phase overhead transmission lines above a lossy ground as a frequency-dependent complex function", in proceedings of the ieee conference on power engineering, canada, may 2003, pp. 154 – 158. [26] r. mukesh, k. lingadurai, "aerodynamic optimization using simulated annealing and its. variants", international journal of engineering trends and technology, vol.2, no. 3, pp.73–77, 2011. [27] h. ketabchi, b. ataie-ashtiani, "evolutionary algorithms for the optimal management of coastal groundwater: a comparative study toward future challenges," journal of hydrology, vol. 520, pp.193213, 2015. [28] b. behzadi, c. ghotbi, a. galindo, "application of the simplex simulated annealing technique to nonlinear parameter optimization for the saft-vr equation of state," chemical engineering science,science direct, vol.60, no. 3 , pp. 6607–6621, dec 2005. [29] m. k. haldar, "introducing the finite element method in electromagnetics to undergraduates using matlab," international journal of electrical engineering education, vol. 43, pp. 232-244, 2006. [30] e. o. virjoghe, d. e. nescu, m. f. stan, c. cobianu, "numerical determination of electric field around a high voltage electrical overhead line, " journal of science and arts, vol. 4, no. 21, pp. 487-496, 2012. [31] n.yadav, n. kumar, "2-dimensional and 3-dimesional electromagnetic fields using finite element method,” iosr, journal of electrical and electronics engineering, vol. 7, no. 2, pp. 53-60, 2013. [32] j. faiz, m. ojaghi, "instructive review of computation of electric fields using different numerical techniques", international journal of engineering, vol. 18, no. 3, pp. 344-356, 2002. [33] s. bera, i. mukherjee, "an ellipsoidal distance-based search strategy of ants for nonlinear single and multiple response optimization problems," european journal of operations research, vol. 223, no. 2, pp. 321-332, 2012. [34] z.h. che, h.s. wang, "a hybrid approach for supplier cluster analysis," computers & mathematics with applications, vol. 59, no. 2, pp. 745–763, 2010. [35] m. m. atiqullah, "an efficient simple cooling schedule for simulated annealing," in proceedings of the international conference on computational science and its applications, italy, pp 396-404, may 2004. http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=7966856 http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.djekidel%20rabah.qt.&newsearch=true http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.choucha%20abdelghani.qt.&newsearch=true http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.hadjaj%20abdelchafik.qt.&newsearch=true http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=4082359 http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=4082359 http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=8128691 http://scholar.google.ca/citations?view_op=view_citation&hl=en&user=qvrmte8aaaaj&citation_for_view=qvrmte8aaaaj:rolk4nbrz8uc http://scholar.google.ca/citations?view_op=view_citation&hl=en&user=qvrmte8aaaaj&citation_for_view=qvrmte8aaaaj:rolk4nbrz8uc http://ieeexplore.ieee.org/search/searchresult.jsp?searchwithin=%22authors%22:.qt.%20vu%20phan%20tu.qt.&newsearch=true http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=8567 http://www.sciencedirect.com/science/article/pii/s0009250905004902 http://www.sciencedirect.com/science/article/pii/s0009250905004902 http://www.sciencedirect.com/science/article/pii/s0009250905004902 http://www.sciencedirect.com/science/journal/00092509 http://www.sciencedirect.com/science/journal/00092509 http://www.sciencedirect.com/science/journal/00092509/60/23 https://link.springer.com/conference/iccsa 13331 facta universitatis series: electronics and energetics vol. 38, no 3, september 2025, pp. 513 531 https://doi.org/10.2298/fuee2503513a © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper desgin development and signal processing of 5g mimo antenna on two distinct substrates neetu agrawal1, sanjay chouhan2 1department of electronics and communication engineering, gla university, mathura, u.p., india 2department of electronics and communication engineering, jawaharlal institute of technology (jit) borawan, m.p., india orcid ids: neetu agrawal https://orcid.org/0000-0002-0448-9507 sanjay chouhan https://orcid.org/0000-0003-2654-3567 abstract. this article covers the design, development, and signal processing of a 5g mmwave mimo antenna. the antenna design is first simulated using cst 18 software and optimized iteratively to meet the requirements. after finalizing the design, a prototype is fabricated and tested in an anechoic chamber to measure radiation patterns and gain in a controlled environment. the antenna uses two substrate materials: rogers rt/duroid and fr4. rogers rt/duroid offers higher efficiency, gain, and lower loss at high frequencies compared to fr4. the design features a partial ground plane and orthogonal positioning of radiating components to enhance isolation. the antenna is designed to be compact and provide high bandwidth, making it ideal for 5g applications. the isolation between ports is greater than 13 db for the rogers rt/duroid substrates and greater than 16 db for the fr4 substrates. the antenna design using rogers rt/duroid resonates at 20 ghz, while the one using fr4 substrates resonates at 28 ghz. key performance parameters for both substrates, such as ecc (envelope correlation coefficient), meg (mean effective gain), dg (diversity gain), ccl (channel capacity loss), gain, radiation pattern, total and radiation efficiencies, are compared. for the rt/duroid design, the ecc is less than 0.007, dg is greater than 9.97, ccl is less than 0.4 bps/hz, peak gain is 7.5 db, radiation efficiency ranges from 82% to 88%, and total efficiency ranges from 62% to 82% within the desired frequency band (15–35 ghz). in contrast, the fr4 design shows an ecc of less than 0.006, dg greater than 9.95, ccl less than 0.4 bps/hz, peak gain of 5.6 db, radiation efficiency between 40% and 52%, and total efficiency between 35% and 50%. rt/duroid has a relative permittivity (εr) of 2.2, loss tangent (tanδ) of 0.0009, and a thickness (t) of 0.8 mm, while fr4 has an εr of 4.3, tanδ of 0.025, and thickness of 1.6 mm. the efficiency, gain, and return loss limitations can be mitigated by carefully selecting the dielectric material. key words: mimo antenna, 5g, ecc, meg, ccl received december 12, 2024; revised march 16, 2025 and april 01, 2025; accepted april 15, 2025 corresponding author: neetu agrawal gla university, mathura, u.p., india e-mail: neetuagrawal.ec@gla.ac.in https://orcid.org/0000-0002-0448-9507 https://orcid.org/0000-0003-2654-3567 514 n. agrawal, s. chouhan 1. introduction the rapid increase in the use of smartphones, tablets, and wi-fi hotspots, coupled with the growing demand for mobile data, has posed significant challenges for wireless service providers in managing the global bandwidth shortage. providers are striving to deliver high quality, low-latency, and high-resolution data services to mobile devices. meanwhile, the need for smaller and more portable devices has added complexity to current wireless communication systems. the existing frequency spectrum is also becoming overcrowded due to overlapping technologies, which further complicates the situation. as a result, researchers are exploring new solutions, such as 5g technology and the mm-wave frequency spectrum (30-300 ghz), to tackle these emerging issues. [1]. this paper explores various mimo antenna designs for 5g communication, including a dual-band antenna for 28/38 ghz mm-wave systems using high isolation metamaterials, as well as a pentagon-shaped antenna that offers wide dual-band performance. [2]. this paper discusses a mimo antenna designed for 5g mm-wave applications at 28/38 ghz, featuring a compact size, high gain, and wide bandwidth. to reduce mutual coupling between the radiating elements, a parasitic element with a simple geometry is positioned between the mimo elements. the presence of the parasitic element improves the antenna's isolation, achieving a 25 db enhancement in isolation [3]. a simulation of several antenna designs over the operating band 10–15 ghz has been carried out. for a variety of substrate materials, return losses, vswr, and gain was investigated, and their effects were examined [4]. a micro-strip patch antenna with a reverse u-shaped slot operates in two bands at mm-wave frequencies (28 and 38 ghz) [5]. a small mimo antenna design and characterization for potential 5g applications is presented. the proposed work's unit element is modeled after a typical circular patch antenna, but it has two rectangular slots added to it to provide broad bandwidth and operates a 5g mm band. a defective ground structure is made to improve the antenna's radiating properties and the arrays are rectangular slotted patch antennas [6-7]. a ꝏ-shaped mimo antenna is introduced for future 5g mm wave communication, resonating at 28 ghz. the proposed mimo antenna consists of four antenna elements, each spaced 90 degrees apart. each antenna element's radiating component is made up of four circular ring patches, which play a key role in achieving the desired frequency band operation [8-9]. the bandwidth enhancement of an antenna can be achieved through the frequency-dependent properties of polymer composite dielectric materials [10]. this research demonstrates a combined four-element 5g/4g mimo antenna system. it operates in the tri-bands of 28/37/39 ghz for 5g and in the 1.8-2.6 ghz band for 4g [11]. this article introduces a multiband mimo antenna for a 5g system. the proposed antenna is designed using characteristic mode analysis. the planar inverted-f antenna (pifa) structure covers the 3.5, 4.3, 28, and 35 ghz bands. [12]. the article has a detailed discussion of design approaches, performance parameter-based optimization, construction, and diversity analysis of the suggested 5g mimo antenna. the elliptical slot is crucial to the design to attain high bandwidth [13]. the purpose of this research was to create a compact mimo antenna that has a large coverage area, and provides strong isolation properties over the necessary resonance bandwidth. the presented antenna has a straightforward design, has a wideband performance of nearly 15 ghz, and has superior isolation of 26 db. the addition of a line resonator has increased the isolation level [14]. this paper presents a compact four-port mimo antenna designed for 5g applications. the antenna has a size of 11.3 mm *31 mm, excluding the feed lines [15]. a single-element array with a 2:1 voltage standing wave ratio (vswr) is designed on a rogers rt duroid 5880 desgin development and signal processing of 5g mimo antenna on two distinct substrates 515 substrate, targeting the 27.06–28.35 ghz frequency range for 5g applications [16]. this paper presents the design and implementation of a compact mimo antenna system, featuring coplanar waveguide (cpw) feeding and a connected ground structure [17]. this paper introduces an s-shaped, four-port multiple input multiple output (mimo) wideband mmwave antenna, operating within the 25 ghz to 39 ghz frequency range [18]. a wideband antenna incorporating double negative (dng) metamaterial has been designed and analyzed for use in both 4g and 5g applications [19]. this paper introduces a compact multi-slotted patch antenna designed for long-term evolution (lte) and 5g communication applications. the proposed antenna features a stepped patch along with a ground plane. [20]. a planar rectangular slot antenna with dual-band functionality and enhanced peak gain has been proposed, designed, and manufactured for sub-6 ghz 5g applications [21]. on fr4 substrates, a dual-element octagon antenna with a slot is created that operates between 3.1-4.5 ghz in the 5g sub-6 ghz spectrum. to minimize mutual coupling between mimo antennas, an isolation element of t shape is positioned at the ground plane. the physical dimensions of the mimo antenna are 55*38 mm2, and its ecc (or correlation) value across the completely operational spectrum is 0.0004 [22]. to improve isolation and better match impedance, a modified t-shape stub was kept between radiators and used modify tapered feedline with a defective ground structure in a 20*35 mm2 mimo antenna array for n78/ 3.3-3.8 ghz, 5g band. in the operating band, the antenna produced a gain of 2.34 dbi and a radiation efficiency of 93% [23]. compact mimo antennas of different shapes are designed on fr4 substrate in a low operational frequency band using improved isolation techniques [24-27]. there are numerous antennas and antenna arrays designs with different isolation techniques were studied [28-29]. this paper presents a broadband antenna array designed for 28 ghz 5g communication. the array measures 45 * 20 mm² and operates within the frequency range of 25.052–34.923 ghz, as confirmed by measurements [30]. most of the researcher has designed mimo antenna on fr4 substrate for low band (<6 ghz) and on rt/duroid for mm-wave band (>6ghz) 5g application. the proposed dual band mimo antenna consists of a rectangular ground plane on one side of the substrate and an f-shaped radiator with a circular slot in the middle [31, 34]. a novel low power beamforming method for massive mimo systems is presented in this research. [32]. a mimo wideband 3d antenna system with 8 ports in an octagon form is proposed in this article for terahertz (thz) applications. the proposed mimo antenna systems are suitable for sixth-generation wireless communication networks [33]. at the mm-wave band, fr4 is not ideal due to its low gain and efficiency, although it is more affordable than rt/duroid. this paper presents the design of a mimo antenna on both fr4 and rt/duroid substrates and compares their performance. fr4 provides better return loss and good isolation, while rt/duroid offers higher gain, greater efficiency, improved ecc and dg, and a better radiation pattern in the mm wave 5g band. therefore, rt/duroid is a superior substrate for the mm-frequency band. 2. mimo antenna design the proposed mimo antenna is fabricated using two dielectric materials: fr4 and rogers rt/duroid 5880. the permittivity (εr), tangent loss (tanδ), and thickness (t) for the fr4 substrate are 4.3, 0.025, and 1.6 mm, respectively, while for the rt/duroid substrate, they are 2.2, 0.0009, and 0.8 mm. while rogers rt/duroid is a less lossy substrate compared to fr4, it is more expensive. the schematic top view and back view structure of the proposed mimo antenna with optimized dimensions is shown in figure 1(a) and design steps of single antenna, 516 n. agrawal, s. chouhan table 1 optimize parameters antenna parameters a=fl b c d e h i j k l fw size in millimeter 7.89 5 8 6 2.0 15 15 7.7 30 30 3.8 top view back view (a) (b) fig. 1 schematic structure of proposed antenna (a) top view & back view mimo (b) design steps of single antenna is shown in figure 1(b). in step 1, a 50-ohm meander line is created. similarly, meander line antennas are developed in steps 2, 3, and 4. table 1 presents the optimized dimensions of the antenna. the fabrication design of the proposed mimo antenna for both fr4 and rogers rt/duroid 5880 substrates is shown in figure 2. the substrate size for both antennas is 30 mm * 30 mm, though the thicknesses differ. the front view of the antenna design is desgin development and signal processing of 5g mimo antenna on two distinct substrates 517 identical, with four radiating elements connected to form a common element. in a mimo system, the antennas are arranged and connected to optimize their s-parameters and resonance frequency. in the bottom view, a ring-shaped ground plane is used to reduce size and enhance isolation. the ring-shaped ground plane is created by a square cut of 22 mm * 22 mm for the fr4 design and 15 mm *15 mm for the rogers rt/duroid 5880 design within the full ground plane. the substrate material is placed between the radiating elements and the ground plane in the patch antenna. both the radiating elements and ground plane are made of perfect electrical conductor (pec) material. a meandered line structure is employed to compact the antenna, and the shared geometry provides a wide bandwidth and improves gain. the proposed shared meandered mimo antenna is more compact and delivers improved performance. a 50 ω sma connector was used at the input port to feed the radiator. the specifications of the substrates for the fr4 and rogers rt/duroid designs are provided in table 2. top view back view (a) top view back view (b) fig. 2 fabrication design of mimo antenna for (a) fr4 (b) rogers rt/duroid 518 n. agrawal, s. chouhan table 2 substrates specification of design mimo antenna parameter fr4 rt/duroid 5880 substrate thickness 1.6 mm 0.8mm permittivity and tangent loss εr = 4.3, tanδ = 0.025 εr = 2.2, tanδ = 0.0009 ground cut (mm2 ) 22*22 15*15 overall size (mm2 ) 30*30 30*30 3. result and discussion the cst-18 version studio suite software was used for simulation and a znb20 vector network analyzer (vna) was used to measure the s-parameters of the proposed mimo antenna for both substrates (fr4 and rogers rt/duroid). the reflection and isolation coefficients were analyzed using the s-parameters. the reflection coefficient is represented by s11, while the isolation coefficients are represented by s21, s31, and s41. figure 3 shows the measured and simulated reflection coefficient (s11) for both fr4 material and rogers rt/duroid polymer. fig. 3 return loss s11 results for fr4 and rogers rt/duroid the measured frequency range of the proposed mimo antenna for rogers rt/duroid is 17.56-21.76 ghz, while the simulated frequency range is 15.74-34.88 ghz. the simulated return loss at the 19.7 ghz resonance frequency is 55 db, and the observed return loss at the 20 ghz resonance is 30 db. similarly, the measured frequency range of the proposed mimo antenna for fr4 is 22.3-35 ghz, while the simulated frequency range is 22-35 ghz. the simulated return loss at the 27.4 ghz resonance frequency is 59 db, and the observed return loss at the 27.9 ghz resonance is 42 db. slight variations between the measured and simulated results are attributed to manufacturing errors. measured and simulated isolation coefficients (s21, s31, s41) for fr4 and rogers desgin development and signal processing of 5g mimo antenna on two distinct substrates 519 rt/duroid are shown in figure 4 (a) and 4(b) respectively. the simulated and measured isolation is below -13 db in the operating band of 15-35 ghz for rogers rt/duroid, while for the fr4 design, the isolation is below -16 db. table 3 presents the result comparisons for both substrate designs (fr4 and rt/duroid) within the operating band of 15-35 ghz. (a) (b) fig. 4 isolation results for (a) fr4 (b) rogers rt/duroid 520 n. agrawal, s. chouhan table 3 result comparisons for fr-4 and rt/duroid parameters result fr4 design rogers rt /duroid return loss 59 db 55db resonance frequency 28 ghz 20 ghz isolation <-16 db <-13 db peak gain 5.6 dbi 7.5 dbi ecc 0.0012 0.007 dg >9.94 db >9.97 db radiation efficiency >36% >82% total efficiency >32% >62% meg <-3db <-2.8db scd 78.1amp/m 281 amp/m the surface current distribution (scd) of the proposed antenna for both fr4 and rogers rt/duroid is shown in figure 5. for the surface current analysis, port 1 is excited, while the other ports are terminated with matching impedance. the analysis shows a reduced current coupling with antenna elements 2, 3, and 4. at different ports, the surface current ranges from 0 to 78.1 a/m for fr4, and from 0 to 281 a/m for rogers rt/duroid. the effects of coupled return loss and isolation factors are analyzed using the envelope correlation coefficient (ecc). (a) (b) fig. 5 surface current distribution results for (a) fr4 (b) rogers rt/duroid figure 6 shows the measured and simulated ecc results for the fr4 and rogers rt/duroid systems. the simulation and measurement results indicate that the ecc is less than 0.0012 for the fr4 design, and less than 0.007 for the rogers rt/duroid design across the entire simulated frequency range, demonstrating the effectiveness of the mimo antenna's diversity performance. the ecc values suggest minimal correlation between the antenna elements. s-parameters can be used to determine the ecc, which represents the relationship between antenna elements. ecc is particularly important in this context, as individual isolation measurements cannot fully capture the diversity response. desgin development and signal processing of 5g mimo antenna on two distinct substrates 521 fig. 6 ecc results for fr4 and rogers rt/duroid the diversity gain (dg) of the proposed mimo antenna for fr4 and rogers rt/duroid is shown in figure 7. for the fr4 design, the dg exceeds 9.95 db across the entire frequency range, while for the rogers rt/duroid design, the dg exceeds 9.97 db. the ideal dg value is 10 db. as the dg increases, the correlation value decreases rogers rt/duroid. fig. 7 diversity gain result for fr4 and rogers rt/duroid 522 n. agrawal, s. chouhan the meg (maximum efficiency gain) can be used to highlight the diverse aspects of mimo antennas. to evaluate the meg's diversity performance for different crosspolarization ratios (xpr), it is analyzed for two mediums: isotropic and gaussian. the meg values for both isotropic and gaussian mediums are shown in figure 8. a comparison of the various meg values at the resonance frequency is presented in table 4 fig. 8 mean effective gain result for fr4 and rogers rt/duroid at isotropic and gaussian medium table 4 meg result at a resonance frequency meg isotropic medium gaussian medium design resonance frequency (ghz) xpr=0db xpr=6db xpr=0db xpr=6db fr4 28 -3.0 -3.3 -3.8 -4.4 rogers rt/duroid 20 -3.3 -2.8 -6.0 -5.5 figure 9 shows the measured and simulated gain for both the fr4 and rogers rt/duroid designs. for the fr4 design, the measured gain ranges from 3.3db to 4.96 db, while the simulated gain ranges from 3.4db to 5.6 db across the frequency spectrum. the simulated and measured gains at the resonance frequencies are 5.2 db and 4.96 db, respectively. for rogers rt/duroid, the measured gain ranges from 4.7 to 6.4 db, while the simulated gain ranges from 3.15 db to 7.5 db across the frequency spectrum. at the resonance frequency, the simulated and measured gains are 7.5 db and 6.2 db, respectively. desgin development and signal processing of 5g mimo antenna on two distinct substrates 523 fig. 9 gain result for fr4 and rogers rt/duroid figure 10 shows the measured and simulated efficiency for both rogers rt/duroid and fr4. for rogers rt/duroid, the radiation efficiency and total efficiency exceed 82% and 62%, respectively. in contrast, for the fr4 design, the radiation efficiency and total efficiency are greater than 38% and 36%, respectively, as shown in figure 10. ccl (channel capacity loss) was incorporated into the mimo characteristics to provide insights into the channel capacity losses the system experiences due to correlation. ccl is another important performance metric for mimo antennas. fig. 10 efficiency result for fr4 and rogers rt/duroid 524 n. agrawal, s. chouhan the ccl results over the frequency spectrum are shown for both fr4 and rt/duroid in figure 11. the ccl in the operating bands must be less than 0.4 bps/hz to meet the specified requirements, as indicated in figure 11. the radiation patterns for the e-plane and h-plane are shown in figures 12(a) and 12(b) for fr4, and in figures 12(c) and 12(d) for rt/duroid. for fr4, the e-field has a magnitude of 15.2 dbv/m, with the main lobe directed at 335 degrees, while the h-field has a main lobe direction of 135 degrees and a magnitude of 31.9 dba/m. for rt/duroid, the e-field has a magnitude of 20.5 dbv/m, with the main lobe directed at 330 degrees, while the h-field has a main lobe direction of 0 degrees and a magnitude of 34.3 dba/m. (a) (b) fig. 11 ccl result for (a) fr4 (b) rt/duroid desgin development and signal processing of 5g mimo antenna on two distinct substrates 525 e-plane radiation pattern h-plane radiation pattern (a) e-plane radiation pattern h-plane radiation pattern (b) fig. 12 radiation pattern result (a) fr4, (b) rt/duroid the parametric analysis is done for varying feed width and feed length of proposed design antenna, are shown in figures13 (a) and 13(b). the s11 result is observed for feed width 3.6 -4.0 mm and got return loss and sharp resonance at 3.8 mm feed width. similarly good return loss at 7.89 mm feed length of selected range from 7.69 mm to 8.09 mm. 526 n. agrawal, s. chouhan (a) (b) fig. 13 parametric analysis by changing (a) feed width; (b) feed length the effect of full ground plane and partial ground plane on s-parameters are also observed by figure 14. the partial ground structure antenna is having good result. desgin development and signal processing of 5g mimo antenna on two distinct substrates 527 fig 14 sparameters result with full ground (fg) and partial ground (pg) plane table 5 compares the proposed design with various existing 5g antenna designs. the proposed design demonstrates optimum antenna performance characteristics, making it suitable for use in 5g communication. the results from the proposed design and its simulations show that the proposed design includes all these critical metrics. table 5 comparative study with existing state of art literature ref overall size (mm2) substrates resonance freq. (ghz) return loss (db) isolation (db) operating band (ghz) [4] 30*30 rogers rt5880 εr = 2.2, tanδ = 0.0009, t = 1.575mm 27 30 <-29 26.16-29.72 [5] 26*14.5 rogers rt5880 εr = 2.2, tanδ = 0.0009, t = 0.508mm 28 38 22 20 -39 -38 21.429.35, 36.6-40.4 [6] 28*28 rogers duroid rt/5870 εr = 2.33 tanδ = 0.0012, t = 0.79 mm 28 38 >20 -50 26-31.5, 36.5-41.74 [8] 157.7*70 rogers rt5880 εr = 2.2, tanδ = 0.0009, t = 0.508 mm 28 38 25 >25 27.15-28.77, 37.59-38.49 528 n. agrawal, s. chouhan [10] 30*35 rogers r04350b, εr = 3.66, t = 0.76 mm 28 ng <-10 25.5-29.6 [15] 48*31 neltec εr = 2.2, tanδ = 0.0009, t = 10 mil 28 >10 >21 26-31 [16] 51.44*18.34 rogers rt duroid 5880 εr = 2.2, tanδ = 0.0009, t = 0.8 mm 28 >10 27.06-28.35 [17] 24*24 roger rt/duroid 5880 εr = 2.2, tanδ = 0.0009, t = 0.8 mm ng >10 >20 24.8-44.5 [18] 24*24 ro5880 εr = 2.3, t = 0.524 mm 29 >10 26 25-39 proposed work 30*30 fr4 εr = 4.3, tanδ = 0.025, t = 1.6 mm 28 58.8 <-16 15-35 rogers rt/duroid εr = 2.2, tanδ = 0.0009, t = 0.8 mm 20 53.5 <-13 ref gain ecc eff. (%) dg (db) ccl (bps/hz) meg remark [4] 7.1 <0.0005 >90 9.999 0.15 <-6 same size but low gain using same substrate [5] 5.2 5.5 0.001 92.2 92 9.99 0.05 placement of metamaterial unit cells is more challenging to design. [6] 9.5 11.5 0.001 ng 9.99 <0.01 parasitic element used for reducing mutual coupling. design and placement of it, is more challenging. [8] 8.2 8.7 0.001 98 97.6 9.995 ng by placing the slot, an lpf, the truncated ground, and a meandered line structure is challenging task. desgin development and signal processing of 5g mimo antenna on two distinct substrates 529 [10] 8.3 <0.01 nearly 82 >9.96 <0.4 ng t-junction power combiner/divider feed network is used. it is complicate task. [15] 10 <15 × 10−4 ng ng ng ng trimming the corner of the rectangular high refractive index metamaterial region along with a ground stub between antennas to enhance isolation is tough task. [16] 16.07  >93 <-3 antenna array is used here. overall size is more than proposed design. [17] 8.6 <0.008 >85 >9.5 ng ng coplanar waveguide (cpw) feeding is used in this paper. less easy, needs drilling and soldering [18] 7.1 <0.05 >85 ng ng <-3 decoupling network is used to reduce mutual coupling with compromising ohmic loss. proposed work 5.6 0.012 >36 (r.e) >38 (t.e) >9.94 <0.4 <-3 defected ground plane and orthogonal arrangement of antenna element to reduce mutual coupling is more simple technique. 7.5 0.007 >62 (r.e) >82 (t.e) >9.97 <-2.8 note: *ng (not given) 4. conclusion the novelty of this research paper lies in its first-time performance comparison between fr4 and rogers rt/duroid antenna designs. still during the literature survey, no investigation has been carried out regarding the right substrate selection for 5g bands. this was problem that, there was no literature survey on same antenna design with different materials. the key finding of paper provides a detailed analysis and comparison of the two substrates in terms of key performance metrics, such as return loss, gain, efficiency, ecc, meg, dg, and ccl, highlighting the strengths and limitations of each material in highfrequency applications. by examining these two materials, the study offers new insights into the suitability of fr4 and rogers rt/duroid for 5g communication systems, contributing https://www.sciencedirect.com/topics/engineering/waveguide 530 n. agrawal, s. chouhan valuable information to the field of antenna design. substrate fr4 is most suited for sub6ghz 5g technology, whereas rt/duroid is the ideal substrate for offering the greatest performance to build antenna in 5g millimeter wave technology. the fr4 and rogers rt/duroid substrates are used to build the suggested antenna, and their comparisons within the operating frequency range of 15–35 ghz are discussed. with same size, proposed antenna, gain is improved by 1.9 db; radiation efficiency is improved by 26% and total efficiency by 44%, ecc low by 0.005 and more directivity for rogers’s substrate than fr4 substrate. references [1] s. jun, y. kang, j. kim and c. kim, "ultra-low-latency services in 5g systems. a perspective from 3gpp standards", etri j., vol. 42, pp. 721-733, 2020. [2] t. nahar and s. rawat, "survey of various bandwidth enhancement techniques used for 5g antennas", int. j. microw. wirel. technol., vol. 14, no. 2, pp. 204-224, 2022. [3] t. s. rappaport, s. sun, r. mayzus, h. zhao, y. azar, k. wang, g. n. wong, j. k. schulz, m. samimi and f. gutierrez, "millimeter wave mobile communications for 5g cellular", ieee access, vol. 1, pp. 335-349, 2013. [4] m. hussain, e. m. ali, s. m. r. jarchavi, a. zaidi, a. i. najam, a. a. alotaibi, a. althobaiti and s. s. m. ghoneim, "design and characterization of compact broadband antenna and its mimo configuration for 28 ghz 5g applications", electronics, vol. 11, no. 4, p. 523, 2022. [5] b. a. esmail and s. koziel, "high isolation metamaterial-based dual-band mimo antenna for 5g millimeter-wave applications", aeu-int. j. electron. commun., vol. 158, p. 154470. 2023. [6] m. hussain, w. a. awan, e. m. ali, m. s. alzaidi, m. alsharef, d. h. elkamchouchi, a. alzahrani, m. f. a. sree, "isolation improvement of parasitic element-loaded dual-band mimo antenna for mmwave applications", micromachines, vol 13, no. 11, p. 1918, 2022. [7] a. rahim and p. k. malik, "analysis and design of fractal antenna for an efficient communication network in the vehicular model", sustain. comput.: inform. syst., vol. 31, p. 100586, 2021. [8] s. islam, m. zada and h. yoo, "low-pass filter based integrated 5g smartphone antenna for sub6ghz and mm-wave bands", ieee trans. antennas propag., vol. 69, no. 9, pp. 5424-5436, 2021. [9] m. m. kamal, s. yang, x. c. ren, a. altaf, s. h. kiani, m. r. anjum, a. iqbal, m. asif and s. i. saeed, "infinity shell-shaped mimo antenna array for mm-wave 5g applications", electronics, vol. 10, no. 2, p. 165, 2021. [10] m. khalid, et al., "4-port mimo antenna with defected ground structure for 5g millimeter wave applications", electronics, vol. 9, no.1, p. 71, 2020. [11] e. al-abbas, m. ikram, a. t. mobashsher and a. abbosh, "mimo antenna system for multi-band millimeter-wave 5g and wideband 4g mobile communications", ieee access, vol. 7, pp. 181916-181923, 2019. [12] n. kumar and r. khanna, "a two-element mimo antenna for sub‐6 ghz and mmwave 5g systems using characteristics mode analysis", microw. opt. technol. lett., vol. 63, no. 2, pp. 587-595, 2021. [13] n. agrawal, m. gupta and s. chouhan, "miniaturized micro-strip antenna for 5th generation applications", in proceedings of the ieee 4th international conference on electronics, communication and aerospace technology (iceca), 2020, pp. 592-595. [14] e. al-abbas, m. ikram, a. t. mobashsher and a. abbosh, "mimo antenna system for multi-band millimeter-wave 5g and wideband 4g mobile communications", ieee access, vol. 7, pp. 181916-181923, dec. 2019. [15] z. wani, m. p. abegaonkar and s. k. koul, "a 28-ghz antenna for 5g mimo applications", prog. electromagn. res. lett., vol. 78, pp. 73-79, 2018. [16] l. d. malviya and p. gupta p, "millimeter wave high-gain antenna array for wireless applications", iete j. res., vol. 69, no. 5, pp. 2645-2654, july 2023. [17] a. patel, a. desai, i. elfergani, a. vala, h. mewada, k. mahant, s. patel, c. zebiri, j. rodriguez and e. ali, "uwb cpw fed 4-port connected ground mimo antenna for sub-millimeter-wave 5g applications", alexandria eng. j., vol. 61, no. 9, pp. 6645-6658, sept. 2022. desgin development and signal processing of 5g mimo antenna on two distinct substrates 531 [18] m. a. khan, a. g. al harbi, s. h. kiani, a. n. nordin, m. e. munir, s. i. saeed, j. iqbal, e. m. ali, m. alibakhshikenari and m. dalarsson, "mmwave four-element mimo antenna for future 5g systems", appl. sci., vol. 12, no. 9, p. 4280, apr. 2022. [19] h. singh, b. sohi and a. gupta, "designing and performance evaluation of metamaterial inspired antenna for 4g and 5g applications", int. j. electron., vol. 108, no. 6, pp. 1035-1057, 2020. [20] r. azim, a. meaze, a. affandi, m. alam, r. aktar, m. mia and m. islam, "a multi-slotted antenna for lte/5g sub-6 ghz wireless communication applications", int. j. microw. wirel. technol., vol. 13, no. 5, pp. 486-496, 2021. [21] i. ishteyaq, i. shah masoodi and k. muzaffar, "a compact double band planar printed slot antenna for sub-6 ghz 5g wireless applications", int. j. microw. wirel. technol., vol. 13, no. 5, 469-477, 2021. [22] n. agrawal, m. gupta and s. chouhan, "modified ground and slotted mimo antennas for 5g sub6 ghz frequency bands", int. j. microw. wirel. technol., vol. 15, no. 5, pp. 817-825, 2022. [23] a. k. saurabh and m. k. meshram, "compact sub‐6 ghz 5g‐multiple‐input‐multiple‐output antenna system with enhanced isolation", int. j. rf microw. computer‐aided eng., vol. 30, no. 8, p. e22246, aug. 2020. [24] s. chouhan, d. k. panda, v. s. kushwah and p. k. mishra, "octagonal-shaped wideband mimo antenna for human interface device and s-band application", int. j. microw. wirel. technol., vol. 11, pp. 287-296, 2019. [25] n. agrawal, s. chouhan and m. gupta, "quad port meander line mimo antenna with the stepped ground structure for 5g wireless application", in proceedings of the ieee 6th conference on information and communication technology (cict), 2022, pp. 1-5. [26] n. agrawal, m. gupta and s. chauhan, "design and simulation of mimo antenna for low frequency 5g band application", in proceedings of the ieee 2nd global conference for advancement in technology (gcat) banglore, 2021, pp. 1-4. [27] n. agrawal, "a comparative study of uwb micro-strip antenna for wireless communication and rf energy harvesting", iop conf. ser.: mater. sci. eng., vol. 1116, p. 012062, 2021. [28] n. agrawal and m. gupta m, "isolation enhancement techniques for uwb-mimo system: a review", in proceedings of ieee international conference on power electronics & iot applications in renewable energy and its control (parc), 2020, pp. 113-117. [29] s. chouhan, d. k. panda, m. gupta and s. singhal, "multiport mimo antennas with mutual coupling reduction techniques for modern wireless transreceive operations: a review", int. j. rf microw. computer‐aided eng., vol. 28, no. 2, p. e21189, 2018. [30] h. ullah and f. a. tahir, "a broadband wire hexagon antenna array for future 5g communications in 28 ghz band", microw. opt. technol. lett., vol. 61, no. 13, pp. 696-701, 2019. [31] p. ranjan, s. yadav and a. bage, "dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications", facta universitatis series electronics and energetics., vol. 36, no. 1, pp. 43-51, 2023. [32] a. khan and j. s. roy, "design of thinned smart antenna of semi-circular dipole array for 5g massive mimo system", facta universitatis series electronics and energetics, vol. 37, no. 3, pp. 409422, sept. 2024. [33] s. al-bawri et al., "a high-performance 3d eight-port thz-mimo antenna system verified with machine learning for enhanced wireless communication systems", int. j. commun. syst., vol. 38, no. 4, p. e6006, 2024. [34] a. khan and j. s. roy, "thinned smart antenna of a semi-circular dipole array for massive mimo systems", adv. electromagn., vol. 12, no. 4, pp. 17-25, dec. 2023. instruction facta universitatis series: electronics and energetics vol. 31, no 2, june 2018, pp. 257 265 https://doi.org/10.2298/fuee1802257v impact of channel engineering (si1-0.25ge0.25) technique on gm (transconductance) and its higher order derivatives of 3d conventional and wavy junctionless finfets (jlt)  b. vandana 1 , jitendra kumar das 1 , sushanta k. mohapatra 1 , suman lata tripathi 2 1 school of electronics engineering, kiit university, bhubaneswar, odisha, india 2 electronics and communication engineering, lovely professional university, jalandhar, punjab, india abstract. the paper explores the analog analysis and higher order derivatives of drain current (id) at gate source voltage (vgs), by introducing channel engineering technique of 3d conventional and wavy junctionless finfets (jlt) as silicon germanium (si1-0.25ge0.25) device layer. in view of this, the performances are carried out for different gate length (lg) values (15-30 nm) and current characteristics determined by maintaining constant on current (ion 10-5) (a/μm) for both devices. with respect to this, a comparison has been made between these mos structures at molefraction x = 0.25 and it was found that the electric field is perpendicular to the current flow which induces volume inversion approach. accordingly, for the simulation study better channel controllability over the gate is observed for wavy structures and high id induces as the lg scales down. with respect to this the constant ion determine id, transconductance (gm), transconductance generation factor (tgf) and its higher order terms (g\ m, and g\\ m) of the devices are studied with relaxed sige approximation. the extensive simulation study on short channel (sc) parameters are also performed and it is observed that the wavy jl finfet shows less sensitivity towards short channel effects (sces) over conventional one, therefore the dependency of n-type doping concentration (nd = 1.7x1019 cm-3) and metal workfunction (ϕm = 4.6 ev) are responsible to achieving reduced sces. key words: sige jl finfet, channel engineering, molefraction, analog parameters, higher order derivatives, short channel parameters (sc). received may 25, 2017; received in revised form october 23, 2017 corresponding author: b. vandana school of electronics engineering, kiit university, bhubaneswar, odisha, india (e-mail: vandana.rao20@gmail.com) 258 b. vandana, j. k. das, s. k. mohapatra, s. l. tripathi 1. introduction due to the tremendous growth in technology, the exploration of novel architectures has become mandatory for ultra large scale integration (ulsi) applications. among various architectures, the finfet has become an attractive device solution for down scaling the sces. as the device dimensions have moved to nanometer range [1]–[4], this primarily owes to its superior gate control over channel. multi-gate structures like silicon on insulator (soi) mosfets [5], [6] are scaled down to decananometer range, however realizing these mosfets in decananometer [7] range requires extremely sharp source/drain p-n regions which are possibly achieved through high end annealing techniques and there by increases the fabrication cost. to overcome these difficulties a new mosfet without source/drain p-n junction was proposed [8], [9], and named junctionless nanowire transistor. the comparative study was performed between fabricated junctionless finfet (jlt) and conventional bulk finfet, realizing the sces as discussed in [10]. heavily doped jlt induces fully depleted channel in the subthreshold region with high vertical electric field (efield). the e-field is neutral at the inversion mode of operation and the shift in vth occurs when the bands (ϕm – ϕs) are flat at flat band voltage (vfb) [9]. the absence of doping concentration gradients eliminates diffusion impurities and the sharp doping profile problem. the paper explores the multi-gate jl finfet topology which is an extended work of [11], [12], this mainly concentrating the analog performances and the higher order gm parameters using id characteristics. the probabilistic analyses of higher order derivatives are also important to study at scaled lg, the major issues that emphasize the analog and higher order derivatives are important for advance communication system. non-linearity characteristics realizes unwanted disturbances with frequencies differences at input once, which generates intermodulation distortion (imd) at output stage [13]–[15]. the higher order analysis and the inter-modulation harmonics are important to maintain minimal linearity’s at the rf stage [16]. accordingly, at pre-fabrication process the analog performance parameters are necessary at nanoscale regime. the paper discusses the higher order derivative parameters of 3d conventional and wavy jl finfets using channel engineering scheme. along with the introduction, section 2 discusses the device architecture specifications and the simulation procedure undertaken, section 3 includes the comparative analysis on analog performances of these devices using si10.25ge0.25 material as device layer. finally, the conclusion is drawn. 2. device description and simulation framework the multi-gate transistors are the basic step to scale down the sces, the challenges and the issues are discussed in [17] and their performance metrics is given in [18]. a thin dual gate approach on soi with the volume inversion is reported in [5], [19]. the another representation using 2d planar utb and 3d non-planar approach is first given by [20], [21] later provides the detailed analysis with several performance metrics analyzed and reported in [22]–[24]. the significance of the finfet provides better layout area efficiency in the digital circuits [25]. in general, the fin utilizes the availability of single fin per pitch, in which most of the pitch area is unused. to overcome this, the finfet limits the current per pitch technology representation. therefore, the pitch area in finfet utilizes fully channel engineering (si1-0.25ge0.25) technique on gm (transconductance) and its higher order derivatives 259 depleted soi (fd-soi) topology which is grown epitaxial and merged with the 2dfinfet forming a single device with common gate [21]. utilizing these two approaches, a comparative analog analysis has been performed using channel engineering technique (sige material) with the junctionless finfet topology. in this section the architectural representation of conventional jl devices and wavy-jlt is shown in fig. 1(a), (b). accordingly, the parameters required to construct the devices are tabulated in table 1. the structural design is observed for different lg for 15-30 nm with a uniform doping concentration nd = 1.7 x10 19 cm -3 , and using high-k (hfo2) gate side wall spacer’s. the simulations are carried out using sentaurus tcad [26] simulator. phillips unified mobility model is used with lombardi model to account for high-κ induced carrier mobility degradation as considered [27]. for a deeper understanding of the quantum confinement effect, the thickness of fin and utb determine the density gradient based quantization models that are used. inversion accumulation layer mobility model includes doping and transverse field dependency, which in turn accounts for a coulomb impurity scattering being used. (a) (b) (c) fig. 1 a 3d representation of (a) conventional jl finfet, (b) wavy-jl finfet at lg = 15-30 nm (c) id-vgs characteristics of conventional and wavy jl finfet at lg = 20 nm and x = 0.25. to account for the longitudinal and vertical electron field an effective intrinsic density, oldslotboom band gap narrowing model [28], shockley-read-hall mechanism for generation and recombination [29], and quantum mechanical effects are included. the device physical properties are discretized onto a non-uniform mesh of nodes and simulated with appropriate parameterization models [30]. the same models are considered for the 260 b. vandana, j. k. das, s. k. mohapatra, s. l. tripathi simulation study to observe the performance of the devices. with respective to this, the id-vgs characteristics are plotted and shown in fig. 1(c) and the ion ranges constant for both the device, but a small improvement in id is observe for 3d wavy-jlt. table 1 parameter required for simulation. parameters 3d jl finfet 3d wavy-jl finfet sige device layer (wfin) 7 nm 7 nm sige device layer (hfin) 30 nm 30 nm silicon thickness (tsi) --------10 nm donor doping (nd) 1.7x10 19 cm -3 1.7x10 19 cm -3 eot of gate dielectric (tox) 1 nm 1 nm gate work function (ϕm) 4.6 ev 4.6 ev drain supply voltage (vdd) 0.05 v, 0.7 v 0.05 v, 0.7 v channel length (lg) 15-30 nm 15-30 nm underlap s/d (lus, lud) 5 nm 5 nm molefraction (x) 0.25 0.25 total device length (lt) 110 nm 110 nm total device width (lw) 32 nm 32 nm (a) (b) (c) (d) fig. 2 transfer characteristics of (a) jl finfet and (b) wavy-jl finfet for varying lg = 15-30 nm at nd = 1.7 x10 19 cm -3 , ϕm = 4.6 ev. as shown in fig. 2a and 2b, the id-vgs is plotted in logarithmic and linear scales, an improvement in ion and ioff is observed for wavy-jl finfet. the device layer (s/d and channel) is si1-xgex material with molefraction x = 0.25. considering x = 0.25, channel engineering (si1-0.25ge0.25) technique on gm (transconductance) and its higher order derivatives 261 substituting this value of x, results in high content of si in sige material. therefore, the device acquires the properties of si material, and accordingly the simulation data are extracted. the conduction mechanism of jlt seems to be similar to that of im devices, jl device with no concentration gradients across the s/d channel regions and high n– type doping profile induces a volume inversion mechanism. from the fig. 2 it is analyzed that, as the lg is scaled down, the ion enhances and ioff reduces, on this point of view the performance of the device is identified using sige channel. in fig. 2c and 2d the id is plotted along the vgs for the different value of x at lg = 20 nm, from this it is realized that as the value of x increases the shift in vth takes place which there reduces the ioff. 3. results and discussions the section deals with the results and discussions carried out for the simulation study. the higher order gm of id characteristics results in the second and third order (g \ m, g \\ m) parameters. further, these parameters result in second and third order intermodulation and linearity performances. in mos circuits, harmonic distortion occurs due to the nonlinearity exhibited by higher-order derivatives of id-vgs characteristics. therefore, the circuits realize balanced topologies, due to this the even-order harmonics are cancelled out. the third order harmonic, which represents g \\ m, determines a lower limit of distortion and hence amplitude should be minimized. thus, reducing g \\ m and increasing the gm acts as a sustainable solution to improve device linearity[31]. (a) (b) fig. 3 tgf and gm as a function vgs (a) jl finfet and (b) wavy-jl finfet for different lg = 15-30 nm at nd = 1.7 x10 19 cm -3 , ϕm = 4.6 ev and x = 0.25. the fig. 3 represents tgf (gm/id) and gm the values are extracted from the measured values of id and plotted as a function of vgs as illustrated in fig. 2(a, b). the graphs exhibit different dimensions of lg, jl transistors, and show that a lower gm is induced at room temperature because of the reduced carrier mobility with that of the im devices. the mobility is an important parameter for evaluating gm, but the other factors may also affect this parameter. according to the drift equation the current that flows through the device layer has a great impact on the mobility, e-field, and nd. this can be identified without including the mobility degradation models to the simulator and measured at different dimensions. the parameter tgf is observed as the available gain per unit value of power dissipation. from the fig. 3 gm increases as the id increases for scaled lg, but 262 b. vandana, j. k. das, s. k. mohapatra, s. l. tripathi the tgf decreases as the lg scales down. however, the tgf values are near to the ideal values and but the gm values are very high for jl finfet. (a) (b) fig. 4 g \ m as a function vgs (a) jl finfet and (b) wavy-jl finfet for different lg = 15-30 nm at nd = 1.7 x10 19 cm -3 , ϕm = 4.6 ev and x = 0.25. (a) (b) fig. 5 g \\ m as a function vgs (a) jl finfet and (b) wavy-jl finfet for different lg = 15-30 nm at nd = 1.7 x10 19 cm -3 , ϕm = 4.6 ev and x = 0.25. table 2 sc parameters 3d jl finfet at vds = 0.7v. lg (nm) s-ssub (mv/decade) ion x10 -5 (a/μm) ioff x10 -10 (a/μm) 15 70.446 2.70 0.190 20 80.12 2.30 2.57 25 81.419 2.28 2.01 30 70.905 2.37 0.20 table 3 sc parameters for wavy-jl finfet at vds = 0.7v. lg (nm) s-ssub (mv/decade) ion x10 -5 (a/μm) ioff x10 -11 (a/μm) 15 66.702 2.99 2.24 20 66.545 2.83 2.12 25 66.427 2.69 2.02 30 66.357 2.55 1.94 channel engineering (si1-0.25ge0.25) technique on gm (transconductance) and its higher order derivatives 263 table 4 sc parameters at different values of x for jl finfet vds = 0.7v, lg = 20 nm. x s-ssub (mv/decade) ion x10 -5 (a/μm) ioff (a/μm) 0.25 80.12 2.30 2.57x10 -10 0.5 78.662 2.05 7.48x10 -11 0.75 77.449 1.42 1.79x10 -12 table 5 sc parameters at different values of x for 3d wavy-jl finfet vds = 0.7v, lg = 20 nm. x s-ssub (mv/decade) ion x10 -5 (a/μm) ioff (a/μm) 0.25 66.545 2.83 2.12 x10 -11 0.5 66.89 2.48 7.44 x10 -12 0.75 67.319 1.47 9.88 x10 -14 the higher order derivatives of id (g \ m and g \\ m) as a function vgs for different lg at vds = 0.7 v are plotted in fig. 4 and 5 respectively. usually for better linearity properties there should be a lesser distortion amplitude of g \ m and g \\ m. the value of vgs at which the higher order of transconductance parameters (g \ m and g \\ m) becomes zero is known as zero crossover point (zcp) which decides the optimum bias point for device operation [15], [32]. therefore, from the fig. 4 and fig. 5 the minimal higher order derivative shows better for wavy-jl finfet. the comparison of sc parameters for jlt devices at lg variation is tabulated in tables 2 and 3, and at fixed lg with different values of x is given in table 4 and 5. from the overall simulation study the wavyjlt explores good improvement in ion and possess less sensitivity to sces over the conventional one. 4. conclusion the paper investigates the performance study of analog analysis and higher order parameters for both conventional and wavy jlfinfet for different lg variations. due to the equal amount of doping profiles along the device layer the ion is improved and ioff is decreased. the conduction mechanism of jl finfet with the concept of sige device layer is explained at different values of x. the simulation results are extracted at vdsat values at x = 0.25, ϕm = 4.6 ev are considered to estimate the id characteristics and the higher order parameters are evaluated accordingly. from the results it has been observed that the higher order parameters show minimal non-linearity distortions performance for wavy-jl finfets over conventional jlt. therefore, the performance of the 3d wavyjl finfet shows better channel controllability through gate and thereby enhances the id. on the other hand, the high nd with the effective channel length and width of the depletion layer are also responsible to achieve scaled sces. 264 b. vandana, j. k. das, s. k. mohapatra, s. l. tripathi references [1] c. hu, “finfet and other new transistor technologies. univ. of california. article. finfet and other new transistor technologies,” 2011. [2] x. huang, w.-c. lee, c. kuo, d. hisamoto, l. chang, j. kedzierski, e. anderson, h. takeuchi, y.-k. choi, k. asano, and others, “sub 50-nm finfet: pmos,” in technical digest. international of the electron devices meeting, iedm’99., 1999, pp. 67–70. [3] d. hisamoto, w.-c. lee, j. kedzierski, h. takeuchi, k. asano, c. kuo, e. anderson, t.-j. king, j. bokor, and c. hu, “finfet-a self-aligned double-gate mosfet scalable to 20 nm,” ieee trans. electron devices, vol. 47, no. 12, pp. 2320–2325, 2000. [4] s.-y. kim and j. h. lee, “hot carrier-induced degradation in bulk finfets,” ieee electron device lett., vol. 26, no. 8, pp. 566–568, 2005. [5] t. ernst, s. cristoloveanu, g. ghibaudo, t. ouisse, s. horiguchi, y. ono, y. takahashi, and k. murase, “ultimately thin double-gate soi mosfets,” ieee trans. electron devices, vol. 50, no. 3, pp. 830– 838, 2003. [6] j. p. colinge, “the new generation of soi mosfets,” rom. j. inf. sci. technol, vol. 11, no. 1, pp. 3– 15, 2008. [7] t. rudenko, s. barraud, y. m. georgiev, v. lysenko, and a. nazarov, “electrical characterization and parameter extraction of junctionless nanowire transistors.,” j. nano res., vol. 39, 2016. [8] j.-p. colinge, c. w. lee, a. afzalian, n. dehdashti, r. yan, i. ferain, p. razavi, b. o’neill, a. blake, m. white, and others, “soi gated resistor: cmos without junctions,” in proceedings of the ieee international soi conference, 2009, pp. 1–2. [9] a. kranti, r. yan, c. w. lee, i. ferain, r. yu, n. d. akhavan, p. razavi, and j. p. colinge, “junctionless nanowire transistor (jnt): properties and design guidelines,” in proceedings of the essderc conference, 2010, pp. 357–360. [10] r. rios, a. cappellani, m. armstrong, a. budrevich, h. gomez, r. pai, n. rahhal-orabi, and k. kuhn, “comparison of junctionless and conventional trigate transistors with lg down to 26 nm,” ieee electron device lett., vol. 32, no. 9, pp. 1170–1172, 2011. [11] b. vandana, b. s. patro, s. k. mohapatra, and j. k. das, “exploration towards electrostatic integrity for sige on insulator (sg-oi) on junctionless channel transistor (jlct),” facta universitatis, series: electronics and energetics, vol. 30, no. 3, pp. 383-390, 2017. [12] b. vandana, b. s. patro, j. k. das, and s. k. mohapatra, “physical insight of junctionless transistor with simulation study of strained channel,” ecti trans. electr. eng. electron. commun., vol. 15, no. 1, pp. 1–7, 2017. [13] p. ghosh, s. haldar, r. s. gupta, and m. gupta, “an investigation of linearity performance and intermodulation distortion of gme cgt mosfet for rfic design,” ieee trans. electron devices, vol. 59, no. 12, pp. 3263–3268, 2012. [14] y. pratap, s. haldar, r. s. gupta, and m. gupta, “performance evaluation and reliability issues of junctionless csg mosfet for rfic design,” ieee trans. device mater. reliab., vol. 14, no. 1, pp. 418–425, 2014. [15] s. k. mohapatra, k. p. pradhan, and p. k. sahu, “linearity and analog performance analysis in gsdgmosfet with gate and channel engineering,” in proceedings of the annual ieee india conference (indicon), 2014, pp. 1–5. [16] b. razavi and r. behzad, rf microelectronics, vol. 2. prentice hall new jersey, 1998. [17] j.-t. park and j.-p. colinge, “multiple-gate soi mosfets: device design guidelines,” ieee trans. electron devices, vol. 49, no. 12, pp. 2222–2229, 2002. [18] s. k. mohapatra, “investigation on performance metrics of nanoscale multigate mosfets towards rf and ic applications,” 2015. [19] f. balestra, s. cristoloveanu, m. benachir, j. brini, and t. elewa, “double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance,” ieee electron device lett., vol. 8, no. 9, pp. 410–412, 1987. [20] l. mathew, m. sadd, s. kalpat, m. zavala, t. stephens, r. mora, s. bagchi, c. parker, j. vasek, and d. sing, “inverted t channel fet (itfet)-fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, itfet sram bit-cell operation. a novel technology for 45nm and beyond cmos.,” in technical digest ieee international electron devices meeting, iedm ., 2005, pp. 713–716. channel engineering (si1-0.25ge0.25) technique on gm (transconductance) and its higher order derivatives 265 [21] w. zhang, j. g. fossum, and l. mathew, “the itfet: a novel finfet-based hybrid device,” ieee trans. electron devices, vol. 53, no. 9, pp. 2335–2343, 2006. [22] a. n. hanna, m. t. ghoneim, r. r. bahabry, a. m. hussain, and m. m. hussain, “zinc oxide integrated area efficient high output low power wavy channel thin film transistor,” appl. phys. lett., vol. 103, no. 22, p. 224101, 2013. [23] a. n. hanna, a. m. hussain, and m. m. hussain, “wavy channel architecture thin film transistor (tft) using amorphous zinc oxide for high-performance and low-power semiconductor circuits,” in proceedings of the 73rd annual device research conference (drc), 2015, pp. 201–202. [24] k. p. pradhan, p. k. sahu, and r. ranjan, “investigation on asymmetric dual-k spacer (ads) trigate wavy finfet: a novel device,” in proceedings of the 3rd international conference on devices, circuits and systems (icdcs), 2016, pp. 137–140. [25] j.-w. yang and j. g. fossum, “on the feasibility of nanoscale triple-gate cmos transistors,” ieee trans. electron devices, vol. 52, no. 6, pp. 1159–1164, 2005. [26] http://www.synopsys.com/, “sentaurus tcad user’s manual,” in synopsys sentaurus device, synopsys, 2012. [27] d. b. m. klaassen, “a unified mobility model for device simulation-i. model equations and concentration dependence,” solid. state. electron., vol. 35, no. 7, pp. 953–959, 1992. [28] j. del alamo, s. swirhun, and r. m. swanson, “simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon,” in proceedigns of the 1985 international electron devices meeting, 1985, vol. 31, pp. 290–293. [29] w. shockley and w. t. read jr, “statistics of the recombinations of holes and electrons,” phys. rev., vol. 87, no. 5, p. 835, 1952. [30] s. saha, “mosfet test structures for two-dimensional device simulation,” solid. state. electron., vol. 38, no. 1, pp. 69–73, 1995. [31] n. aggarwal, i. gupta, k. sikka, and r. chaujar, “tcad linearity performance evaluation of gate workfunction engineering in surrounding gate silicon nanowire mosfet,” nanoscale, vol. 9, no. b, p. 10, 2012. [32] s. kang, b. choi, and b. kim, “linearity analysis of cmos for rf application,” ieee trans. microw. theory tech., vol. 51, no. 3, pp. 972–977, 2003. instruction facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 647 651 doi: 10.2298/fuee1604647l transient voltage suppressor based on diode-triggered low-voltage silicon controlled rectifier  xiang li, shurong dong, zhihui yu, jie zeng, weihuai wang institute of photonics and microelectronics department of information sciences and electronic engineering, zhejiang university hangzhou, china abstract. transient voltage suppressor (tvs) has been widely used for electronic system esd protection. a good tvs is usually costive as it needs some special processes and extra masking layers for fabrication. a novel tvs design based on the standard cmos process will be much more attractive. this work proposes a new tvs device using a cmos compatible diode-triggered silicon controlled rectifier (dlvtscr) as the core device. due to the availability of multiple trigger mechanisms and the dual current paths for bypassing the esd current, the newly proposed device is able to sink an esd current of over 10 a. in addition, the holding voltage is promoted up to 6.83 v and the trigger voltage is lowered down to 10.8 v which is well suited for most portable device applications. key words: tvs, esd, lvtscr 1. introduction the integrated circuits (ics) used in modern mobile electronic devices are faster, more powerful, less power consumptive, and are much smaller than ever before. however, they are more vulnerable to reliability issues, not only due to the small device size and the use of ultrathin gate oxide, but also due to their applications which make the devices more frequently exposed to electrostatic discharge events produced during the frequent human interfacing, and often plugging and disconnecting the usb devices and hdmi port. on-chip protection is now of vital importance for system reliability. however, conventional protection scheme is not only costive and bulky, but also leads to the system performance degradation [1]-[5]. transient voltage suppressor (tvs) diodes have long been used to provide a high robustness system level esd protection [6-8]. under normal operating conditions, the tvs diode maintains in a high impedance state. during a transient discharge event, the tvs breaks down electrically and yields a low impedance shunt path to bypass the transient current. a received june 30, 2015; received in revised form march 12, 2016 corresponding author: shurong dong institute of photonics and microelectronics, department of information sciences and electronic engineering, zhejiang university, hangzhou, china (email: dongshurong@zju.edu.cn) 648 x. li, s. dong, z. yu, j. zeng, w. wang good tvs protection circuit must be able to divert the transient current and to clamp transient voltage below the threshold value before the failure of the protected ic. a tvs structure includes a core device and some steer diodes. the clamping voltage usually depends on the core device, and the steer diodes can divert the esd current to the core device and can reduce the overall capacitance of the structure. however, to obtain a good tvs diode, some special processes, such as deep trench isolation or additional processing masking layers, are required. this work attempts to develop a cmos compatible tvs device. fig. 1 shows the conventional tvs based on a zener diode (a) and the newly proposed tvs structure. fig. 1 conventional tvs structure based on zener diode and the proposed tvs structure based on the standard cmos process. for protecting the interface for data line communications, a good tvs device must possess some special features. first, a low working voltage is crucial for safeguarding the submicron integrated circuits. the maximum reverse working voltage, vrwm, which is the largest allowable dc voltage that can maintains the tvs in non-conducting state, is the key parameter for specifying the working voltage. when the transient voltage exceeds vrwm, the tvs turns on quickly and a low impedance path will be established to divert the transient current. hence, a low working voltage is essential for clamping the transient voltage to a level well below the threshold value. second, the equivalent capacitance of tvs should be low enough in order to preserve signal integrity at the high-speed interface. if the capacitance of the tvs diodes is too high, it will cause excessive load to the circuit and then signal distortion and data errors will result. 2. structure and performance the schematic equivalent circuit and the cross-sectional view of the diode-triggered lvtscr structure are shown in fig. 2. lvtscr, using the gated p-well structure, has been widely used as esd protection devices because of its suitable values of holding voltage and the low trigger voltage. however, the gate structure also plays an important role in the reliability of the device. by adding an extra diode connecting the anode and cathode of the conventional lvtscr, the structure can be triggered by an esd event more easily. when an esd event occurs, the drain pn junction and the substrate of the ggnmos will be first driven into an avalanche breakdown and the voltage drop across transient voltage suppressor based on diode-triggered low-voltage silicon controlled rectifier 649 the diode increases as the avalanche current increases. meanwhile, the electrons in the n+ (the one between the n-well and p substrate) will diffuse into the n-well. when the voltage drop across the diode rises above 0.7 v, the bipolar transistor (q1) will be turned on. and that makes the scr to be turned on later owing to the positive feedback in the transistors q1 and q2. this device has been taped out in 0.18um cmos process. to study the characteristic of this new structure, transmission line pulse (tlp) measurements using pulses with a rise time of 10 ns and a pulse width of 100 ns were conducted. fig. 3 shows the comparison of tlp characteristics for conventional and diode triggered lvtscr. as compared with the conventional lvtscr, the new diode-triggered lvtscr structure exhibits a low parasitic resistance (calculated by dv/di), because the current conduction path in the newly proposed structure is now formed by the ggnmos together with the scr. as shown in f, the trigger voltage decreases from 8.94 v to 7.82 v; whereas the holding voltage increases from 2.01 v to 3.21 v. in addition, the failure current, it2, also increases from 3.17 a to 4.05 a because of the availability of two current conduction paths. (a) (b) fig. 2 cross-sectional view (a) and the schematic equivalent circuit (b) of diode-triggered lvtscr. fig. 3 tlp results of conventional lvtscr and diode-triggered lvtscr. 650 x. li, s. dong, z. yu, j. zeng, w. wang as shown in fig. 4, when the value of d (the distance between the drain side of gate to contact of gate, see fig. 2(a)) increases from 0.85 μm to 2.35 μm, it2 increases from 2.05 a to 3.1 a. when the drain contact is close to the poly gate (when d is small), the heat produced at the drain junction spreads isotropically to the contact metal and results in a lower failure current level [8]. hence, a larger separation between the contact and the poly gate will help to increase the failure current level. on the other hand, this device behaves liking a diode when adding reverse voltage on it. after investigating the standalone dlvtscr, a tvs using the dlvtscr as the core device was realized and the tlp test result is shown in fig. 5. taking i/o1 as an example, when adding esd strike on i/o1 to gnd, the esd current will be released by the steer diode d1, through the dlvtscr and then going to gnd. as shown in fig.5, the tvs structure presents a higher holding voltage of about 6.83 v and an acceptable trigger voltage of about 10.8v. these values should be acceptable for esd protection applications for high-speed digital interfaces such as usb2.0, hdmi, avi ports etc, in portable equipments. fig. 4 tlp characteristics of diode-triggered lvtscr as a function of device spacing (d) between the gate and drain contact of ggmos of the lvtscr. fig. 5 comparison of tlp characteristics of a standalone dlvtscr and a tvs device embedded with a dlvtscr. transient voltage suppressor based on diode-triggered low-voltage silicon controlled rectifier 651 3. conclusion this paper attempts to incorporate a diode-triggered low-voltage silicon controlled rectifier into a tvs. the results show that the larger distance between the gate edge and the drain contact, the higher esd current (it2) can be obtained. the tvs structure was further verified with the standard cmos process and good robustness was obtained. this structure can be used for system level esd protections for high speed digital interfaces such as usb2.0, hdmi, avi ports, and so on. acknowledgement: this work was supported by the national natural science foundation of china (no. 61171038, 61204124). the authors thank the innovation platform for micro/nano device and system integration and cyrus tang centre for sensor materials and applications at zhejiang university. references [1] c. ito, k. banerjee, r.w. dutton, “analysis and design of distributed esd protection circuits for highspeed mixed-signal and rf ics”, ieee trans. electron devices, vol.49, pp.1444-1454, 2002. [2] j.-h. ko, k.-y. kim, j.-s. jeon, c.-h. jeon, c.-s. kim, k.-t.lee, h.-g. kim, "system-level esd onchip protection for mobile display driver ic", in proc. of the sympo. of electrical overstress/ electrostatic discharge, 2011, pp.1-8. [3] a. jahanzeb, l. lou, c. duvvury, c. torres, s. morrison, "tlp characterization for testing system level esd performance", in proc. of the sympo. electrical overstress/electrostatic discharge, 2010, pp.1-8. [4] k. shrier, t. truong, and j. felps, "transmission line pulse test methods, test techniques and characterization of low capacitance voltage suppression device for system level electrostatic discharge compliance", in proc. of the sympo. electrical overstress/electrostatic discharge, 2004. pp.1-10. [5] h. gossner, w. simbürger, m. stecher, "system esd robustness by co-design of on-chip and on-board protection measures", microelectronics reliability, vol. 50, no. 9-11, pp.1359–1366, 2010. [6] m. hove, t. o. sanya, a. j. snyders, i. r jandrell and h .c. ferreira, "the effect of type of transient voltage suppressor on the signal response of a coupling circuit for power line communications", africon, 2011 [7] s. s. choi, d. h. cho, k. h. shim, "development of transient voltage suppressor device with abrupt junctions embedded by epitaxial growth technology", electron. mater. lett., vol. 5, pp. 59-62, jun 2009. [8] r. n. rountree and c. l. hutchins, "nmos protection circuitry," ieee trans. electron devices, vol. 32, pp. 910-917, 1985. facta universitatis series: electronics and energetics vol. 33, no 2, june 2020, pp. 261-271 https://doi.org/10.2298/fuee2002261k © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd dependencies of current harmonics of some nonlinear load devices on rms supply voltage  lidija m. korunović, ivan anastasijević faculty of electronic engineering, university of niš, niš, serbia abstract. the paper deals with the determination of current harmonic dependencies of some nonlinear load devices on the rms supply voltage. these dependencies are based on the laboratory experiments that include the variations of rms supply voltage in relatively wide ranges. the experiments were performed on some representatives of nonlinear load devices. both current harmonic amplitudes and their angles are recorded during the voltage changes, and corresponding dependencies on rms voltage are obtained by curve fitting. the results are related to actual devices that are typically used in residential load sector. the obtained dependencies are the indices of potentially significant effects of rms voltage variation on current harmonics in low voltage installations. key words: load device, voltage variation, current harmonics, power quality, harmonic distortion 1. introduction in up-to-date power networks, there is a significant increase of the use of nonlinear load devices in all characteristic load sectors such are industrial, commercial and residential [1], [2]. for example, residential load sector typically includes the following nonlinear devices: energy efficient lighting  led lamps and fluorescent lamps with electronic ballast; switch-mode power supplied loads  laptop computers, tv sets, mobile chargers; air conditioners; direct drive washing machines; refrigerators and freezers. all nonlinear devices inject current harmonics into the network nodes, and numerous problems can arise [3], [4]. therefore, the limitation of harmonic emission is needed [5], as well as adequate modelling of individual and/or aggregate nonlinear loads for proper harmonic analysis [6], [7]. for the correct harmonic analyses of low voltage networks, load devices should be properly modelled. in [8], modelling of low voltage devices that is based on simulations is presented. these simulations use equivalent electric circuits that represent analytical models of the devices, with typical parameter values. however, the parameters of the devices are received september 2, 2019; received in revised form september 20, 2019 corresponding author: lidija m. korunović faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia e-mail: lidija.korunovic@elfak.ni.ac.rs  262 l. m. korunović, i. anastasijević almost impossible to get from the manufacturers. thus, although the results presented in [8] regard real and reactive power and power factor, as well as total harmonic distortion of the current obtained for different rms values of supply voltages, these can not be adopted for the load devices that belong to the same load category when they consist of different circuits or of the same circuits with different parameters. also, for harmonic power flow analysis information regarding particular current harmonics is needed. on the other hand, there is the group of references that present individual harmonic distortions of currents that can be used for harmonic studies. thus, [9] provides these distortions of some load devices used in households, obtained by measurements and simulations, while individual harmonic distortions of currents and current harmonic angles obtained by measurements are listed in [10]. the significant influence of harmonic distortion of the supply voltage on current harmonic distortion of low voltage devices is found in many references, e.g. [6] and [11]-[13]. it indicates that network operating conditions hardly influence current harmonic emissions. however, published references do not analyse measured current harmonics of low voltage devices when rms supply voltage changes in relatively wide range that can appear in various network operating conditions. therefore, this paper presents the results of experiments performed on some typical low voltage devices used in residential load sector, in order to obtain proper dependencies of current harmonics and their angles, on rms supply voltage. for this purpose the results of experiments performed in time periods when the harmonic distortions of supply low voltage network voltage were almost constant, are selected for the presentation. it is presumed that current frequency component dependencies of a device, and the dependencies of their angles, are not always similar to each other. this assumption is proven in this paper, since mentioned dependences expressed in the form of mathematical functions, demonstrate significant mutual differences for the same load device. the presented approach to determining dependencies of current harmonics on rms supply voltage is applicable to any low voltage load, and obtained dependencies have numerous potential applications. the rest of the paper is organized as follows: typical nonlinear residential load devices are listed in section 2, description of experiments is presented in section 3, section 4 discusses experimental findings of current harmonic dependencies on rms supply voltage in detail, section 5 summarises the functions that represent these dependencies, while the main conclusions are drawn in section 6. the paper ends with the references, and with data of load devices used in experiments that are listed in appendix. 2. representatives of nonlinear load devices in residential load sector the group of linear load devices used in residential load sector consists of resistive load devices such are: cooker hot plates, water and space heaters. the participation of these devices in total energy consumption of residential load sector is reducing, due to the increased usage of other energy sources for cooking (natural gas) and heating (e.g. heat pumps and central heating), while the consumption of nonlinear load devices is increasing constantly. dependencies of current harmonics of some nonlinear load devices on rms supply voltage 263 the group of nonlinear load devices used in residential load sector consists of devices that belong to different types of load. one of these types is nonlinear indoor lighting load whose use increases. namely, linear indoor lighting loads  incandescent lamps, have very low efficiency [14], [15], and therefore are progressively being replaced with more efficient nonlinear lighting sources. in some of the developed countries they are even forbidden. nonlinear lighting load applied in residential load sector includes compact fluorescent lamps (cfl) with electronic ballasts, as well as light-emitting diode (led) lamps. since compact fluorescent lamps are rapidly being replaced with light-emitting diode lamps in modern households (and office buildings) [15], [16], the representative of led lamp was selected for the experiment. its data are listed in the appendix together with data of other nonlinear examined load devices. all load devices with switch mode power supply are named switch mode power supply (smps) type of load [17]. the representatives of this type of nonlinear load are: personal computers, monitors, dvd/cd players/recorders, televisions, etc. the participation of smps loads in total energy consumption of modern household increases as concluded in [18] on the bases of numerous scenarios. in order to obtain current harmonic-rms voltage dependencies of one representative of smps loads typically used in residential load sector, the experiment was performed on a laptop computer. as a result of climate change, air-conditioners are frequently used in serbian households during summer months. therefore, there is the impact of air-conditioner on total energy consumption of residential consumers and consequently on the whole power system, as also noted in many countries (e.g. [19]). in [18] it is found that the ownership of air-conditioning equipment (and personal computers) will grow mostly in urban and rural settlements in the future. therefore, an air-conditioner was selected for laboratory experiment. refrigerators consume noticeable portion of energy in each household, since they operate during the whole year [14]. there are many types of compressor refrigerators, but the refrigerator which is already placed in the laboratory is used for the experiment. in modern households, conventional washing machines are rapidly being replaced with direct drive washing machines that are also nonlinear devices typically used in households. however, an experiment on the washing machine was not performed, since there was not such machine in the laboratory. 3. description of the experiments as mentioned in introduction, laboratory experiments were performed in order to investigate the influence of rms supply voltage on current harmonics of selected nonlinear load devices. in these experiments devices supply voltage changed by a variable autotransformer which was connected to low voltage laboratory installation. the output voltage of autotransformer was decreased from the higher limit of 110 % un according to the standard en 50160 [20] that relates normal operating conditions in low (and medium) voltage distribution networks, to the voltage of 80 % un (that is 10 % bellow en 50160 lower limit of 90 % un) selected to be sufficiently high to ensure that none of the tested devices is damaged. the steps of voltage changes during experiments were 2% un, where un is the rated phase-to-neutral voltage of low voltage network, i.e.230 v. thus, the results presented in the paper are the indicators of current harmonic variations during both normal 264 l. m. korunović, i. anastasijević operating conditions and those abnormal conditions in low voltage networks when the voltage reduces down to 10 % bellow en 50160 lower limit. the measurements of voltage and current were performed by 4-channel power meter lmg450 [21] after each voltage decrease when the steady-state regime was achieved. the applied meter measures voltage and current according to standard [22], i.e.  performs discrete fourier transform (dft) in order to obtain the amplitudes and phase angles of voltage and current harmonics. during the experiments, total harmonic distortions of voltage and current, thdu and thdi, respectively, were calculated by the meter on the basis of voltage and current fourier series with frequency components whose harmonic order is up to the 99th: 99 99 2 2 2 2 1 1 ( ) ( ) 100% , 100% h h h h u i thdu thdi u i       , (1) where uh and ih are voltage and current frequency components, respectively, of hth harmonic order, and u1 and i1, are fundamental voltage and current components. although the meter recorded numerous frequency components including those which frequencies are higher than 2 khz (high-frequency components), for practical reasons this paper analyses only several current frequency components whose order is up to 9th. total and individual harmonic distortions are most frequently used as measures of sine wave harmonic distortion [1], [3]. the latter are also defined for voltage and current, %100 , %100 11 i i hdi u u hdu h h h h  , (2) and calculated from corresponding voltage and current frequency components. as mentioned, the autotransformer used in experiments was supplied by public network. therefore, the voltage waveform was not an ideal sinusoid. the values of thdu and uh were recorded during the experiments on selected nonlinear load devices. dominant frequency components, u5 and u7, are analysed in particular. other frequency components were less than 1 % of voltage fundamental component during all experiments. for example, odd frequency components, u3, u9, u11, u13 and u15, were less than 0.14 %, 0.14 %, 0.50 %, 0.35 % and 0.17 %, respectively, at the half of all measuring instants during experiments. table 1 summarizes the ranges of thdu, hdu3 and hdu5 obtained by the statistical analysis of data during each experiment of the voltage decrease. the ranges during particular experiment are represented in the form: 25% 75% ,25% ,75% ( ; ) , ( ; ) h h h thdu thdu thdu hdu hdu hdu  , (3) where: thdu25% and thdu75% are 25th and 75th percentiles of thdu, respectively, and hduh,25% and hduh,75% are 25th and 75th percentiles of hduh, respectively. since, each voltage frequency component is characterized by its angle, uh, that also influences current harmonic emission of nonlinear loads [6], [11]-[13], the ranges of u5 and u7 during the experiments are also determined in an analogous way as in (3), and are presented in table 1. it is found that the recorded thdu ranges that relate to different experiments performed in the same laboratory on various days and day periods, differ from each other, but during dependencies of current harmonics of some nonlinear load devices on rms supply voltage 265 each experiment they changed stochastically in narrow ranges. the same conclusion is drawn for particular hduh and uh ranges. therefore, it should be emphasized that the results presented in the paper correspond to specific distortion of supply voltage recorded when the experiments were performed. table 1 the ranges of thdu, hdu5, hdu7, u5 and u7 during experiments load device led lamp laptop computer air-conditioner (cooling) refrigerator thdu [%] 2.23; 2.31 3.02; 3.06 2.50; 2.62 2.14; 2.19 hdu5 [%] 1.73; 2.40 2.02; 2.09 2.29; 2.41 1.57; 1.64 hdu7 [%] 1.44; 1.86 1.65; 1.67 0.76; 0.81 1.25; 1.36 u5 [] 169.2; 172.6 171.2; 173.3 178.7; 181.3 178.8; 180.9 u7 [] 51.1; 53.1 53.0; 54.3 59.9; 63.1 43.6; 45.5 4. results 4.1. led lamp current harmonics of one representative of led lamps are examined on the bases of experiment results. it is found that thdi of led lamp increases negligibly from 39.9 % to 43.4 %, for supply voltage variation of 30 %, i.e. for the voltage decrease from 110 % un to 80 % un (253 v  184 v). as mentioned before, the meter records up to 99th frequency component, but this paper analyses only odd current components: 1st (fundamental), 3rd, 5th, 7th and 9th, i.e. i1, i3, i5, i7 and i9, respectively, and their angles, i1, i3 , i5, i7 and i9, so as not to burden the text and figures. even harmonics are not analysed, since they are negligible. fig. 1a) presents measured values of i1, i3, i5 and i9 along with corresponding second order polynomial fits. measured values of i7 (and corresponding fitting polynomial) are not presented in the figure, since they are almost the same as i9 measured values. the polynomials whose general form is y=b0+b1·u+b2·u 2, are obtained with adjusted coefficient of determination, i.e. adjusted r2 ( 2 r ), greater than 0.5 [23]. all polynomial fittings of current harmonics and their angles presented in the paper are obtained with such, relatively large 2 r . this indicates significant relationships between the variables. the parameters of all polynomial fits obtained for led lamp, laptop computer, airconditioner and refrigerator are listed in section 5 (table 2). fig. 1a) depicts that i1 is significantly greater than other frequency components and that i1 slightly decreases with voltage decrease of 30 %  for approximately 8.6 % of its value measured at 110 % un. on the other hand, i3, i5, i9 (and i7), are small: i3 is less than one third, i5 is about fifteen percent, and i7 and i9 are about ten percent, of i1. third current harmonic is almost constant during voltage decrease, while the fifth, seventh and ninth current harmonic increases for about 7 %, 15 % and 3 %, respectively, for 30 % voltage decrease. for the considered voltage decrease, current harmonic angle of i1 and i7 of examined led lamp decrease from 28.7° to 22.4°, and from 28.8° to about 10°, respectively, the angle of i5, increases from 21.0° to 11.7°, while the angles of other frequency components are almost constant (fig. 1b). the angles are also fitted by second order polynomials, whose parameters are denoted by b0, b1 and b2 (table 2). 266 l. m. korunović, i. anastasijević fig. 1 measured values and corresponding fitting curves of: a) amplitudes of i1, i3, i5 and i9, and b) angles of i1, i3, i5, i7, and i9, of led lamp 4.2. laptop computer laptop computers are commonly used in modern households. however, their currents are very distorted. for example, thdi of examined laptop computer varies in the range from 203.7 % to 198.5 % for the voltage change from 110 % un to 80 % un, i.e. it is very high and slightly decreases with mentioned voltage decrease. measured values of the amplitudes of i1, i3, i5 and i9 for different supply voltages, as well as corresponding fitting polynomials, are presented in fig. 2a). the values of i7 amplitudes are omitted from this figure, since they are almost equal to the measured i5 values. laptop computer characterizes large amplitudes of current frequency components. thus, analysed frequency components are between 70 % and 90 % of current fundamental component. furthermore, all of the components, i1, i3, i5, i7 and i9, increase with considered 30 % voltage decrease: for about 23 %, 29 %, 40 %, 32 % and 31 %, respectively. the recorded angles of current frequency components are presented in fig. 2b) together with corresponding second order polynomial fittings. it is found that the angle of i1 decreases with the voltage decrease from 39.2° to 21°, while the angles of other analysed components generally slightly increase with voltage decrease. the angles of i3, i5, i7 and i9 increase: from 158.4° to 167.3°, from 40.8° to 24.6°, from 130.7° to 149.3°, and from 66.2° to 40.3°, respectively, for 30 % supply voltage decrease. fig. 2 measured values and corresponding fitting curves of: a) amplitudes of i1, i3, i5 and i9, and b) angles of i1, i3, i5, i7, and i9, of laptop computer dependencies of current harmonics of some nonlinear load devices on rms supply voltage 267 4.3. air-conditioner as mentioned, air-conditioners are commonly used for cooling in households in serbia. therefore, the experiments were performed when the selected air-conditioner operated in cooling mode. in this mode, thdi changed from 38.9 % to 28.2 %, for the voltage variation from 253 v to 184 v, i.e. it decreases significantly, for even 27.5 % of thdi obtained at 110 % un. this trend of thdi change is different than in the cases of led lamp and laptop computer. according to fig. 3a), amplitudes of fundamental component and current frequency components, slightly change with 30 % voltage decrease, and these changes can be also represented by second order polynomials presented in the same figure. the amplitudes of i7 during experiments are almost the same as i9 amplitudes, and are not presented in fig. 3a). the amplitude of i1 changes negligibly with 30 % voltage decrease (for about 2%), while final values of i3, i5, i7 and i9 are for even 19.6 %, 55.5 %, 83.2 % and 31.8 %, respectively, less than their values obtained at 110 % un. fig. 3 measured values and corresponding fitting curves of: a) amplitudes of i1, i3, i5 and i9, and b) angles of i1, i3, i5, i7, and i9, of air-conditioner on the other hand, there is an increase of the angles of i1, i3, i5 and i9 with 30 % voltage decrease: from 34.6° to 8°, from 104.5° to 23.3°, from 177° to 33.5°, and from 26.4° to 81.1°, respectively. the angle of i7 increases from 106.5° to 141.9° with the voltage decrease to 225.4°v, and then decreases to 63.8° which is measured at 184°v. 4.4. refrigerator differently from other nonlinear load devices, thdi of the examined refrigerator is relatively small. it changes in the range from 5.7 % to 9.6 % for supply voltage variation from 253 v to 184 v. it increases significantly (about 67 % of its initial value) with 30 % voltage decrease and this is quite a different trend of change than trends of thdi changes of other examined load devices. amplitudes of i1, i3 and i5 of refrigerator, as well as corresponding polynomial fittings, are depicted in fig. 4a). the amplitudes of i7 and i9 are omitted, because they are very small and almost the same as amplitudes of i5. fundamental current component decreases for 13.3 % with 30 % voltage decrease, while the trends of i3 and i5 are opposite – 268 l. m. korunović, i. anastasijević they increase for even about 49 % and 149 % of their small initial values measured at 253 v. for the same, 30 % voltage decrease, the angles of i1, i3 and i7 increase: from 51.7° to 35.5°, from 107.3° to 117.6°, and from 35.5° to 24.9°, respectively, i9 increases significantly from 105.4° to 220.7°, while the angle of i5 is almost constant. fig. 4 measured values and corresponding fitting curves of: a) amplitudes of i1, i3 and i5, and b) angles of i1, i3, i5, i7, and i9, of refrigerator 5. summary of current harmonic dependencies on rms supply voltage as discussed in section 4, thdis of led lamp, laptop computer, air-conditioner and refrigerator change quite different with rms supply voltage decrease from 110 % un to 80 % un. the reason is different variation of current frequency components of different devices with the voltage change. also, current frequency components of a device have different trends of change with the same voltage variation. these trends are presented by polynomial fittings with acceptable accuracy. for better insight, the parameters of these fittings, of both amplitudes and angles of i1, i3, i5, i7 and i9, are summarized in table 2 for all examined load devices. listed parameters correspond to particular devices operating under conditions of specific harmonic distortion of the supply voltage, as discussed in section 3. the parameters of similar load devices and other nonlinear devices used in different load sectors can be obtained using experiments analogous to those presented in this paper. for comprehensive research regarding parameter determination at different harmonic distortion of supply voltage expensive programmable source is needed. polynomial functions of both amplitudes and angles of current frequency components of various load devices, obtained under different supply voltage pollution conditions, can be used as input data for harmonic load flow analysis in low voltage installations, or the base for determination of harmonic model of aggregate load. obtained dependencies on rms supply voltage can be used as the part of load and/or harmonic management system in future smart homes and smart buildings, since the regulation of supply voltage can decrease current harmonics and eliminate existing or potential problems caused by harmonic emission. dependencies of current harmonics of some nonlinear load devices on rms supply voltage 269 table 2 parameters of polynomial fits of ih amplitudes and angles, of different nonlinear load devices load device ih parameters of polynomial fit of ih amplitudes parameters of polynomial fit of ih angles b0 [a] b1 [10-4·a/v] b2 [10-6·a/v2] b0 [º] b1 [º/v] b2 [º/v2] led lamp i1 0.04617 0.03683 0.16840 14.2008 0.27478 0.00041 i3 0.01668 0.17859 0.04997 31.7018 0.27437 0.00060 i5 0.01922 0.86482 0.18041 113.517 1.06471 0.00211 i7 0.01505 0.79088 0.15743 174.346 1.4987 0.00276 i9 0.00873 0.24801 0.04654 98.1075 0.80731 0.00175 laptop computer i1 0.08447 3.13475 0.48013 76.1786 0.72586 0.00108 i3 0.10307 4.74304 0.69349 86.9708 2.43972 0.00579 i5 0.10933 5.67059 0.96997 432.505 3.94086 0.00943 i7 0.07309 2.6096 0.33821 405.194 5.32206 0.01263 i9 0.04765 0.91079 0.00171 845.348 7.72459 0.01831 air-conditioner i1 3.08103 137.600 32.1795 267.487 2.70608 0.00706 i3 4.17088 358.800 84.3613 674.884 7.00444 0.01881 i5 4.28898 405.200 97.1605 62.3786 1.01267 0.00791 i7 0.1112 21.9000 9.24923 1745.01 16.5361 0.03644 i9 0.52854 51.1000 10.534 1217.14 12.6702 0.03058 refrigerator i1 2.11544 144.100 36.3634 20.3878 0.35263 0.00027 i3 0.02649 4.48077 1.51362 363.872 2.1763 0.00464 i5 0.12448 7.48473 1.20006 109.046 0.45892 0.0014 i7 0.06567 4.40451 0.90482 335.228 3.28763 0.00723 i9 0.0322 3.22985 0.76027 444.094 1.14503 0.00067 6. conclusions the research based on laboratory experiments, reveals that current harmonic distortion of the examined typical nonlinear load devices changes in different ways with variation of rms supply voltage. the dependences of the amplitudes and angles of fundamental and frequency components of the current are obtained in the form of second order polynomials for the considered load devices. it is revealed that corresponding dependencies of the devices are significantly different. also, the dependencies, of both amplitudes and angles, for particular device are often with the opposite trends of change with rms voltage variation. therefore, the dependencies on rms supply voltage should be taken into account for proper harmonic models of nonlinear load devices. future research should include experiments on numerous load devices under different harmonic distortion conditions of supply voltage by using programmable source, when investment in such equipment is possible, as well as implementation of their results into voltage control procedures for load and harmonic control in low voltage installations and distribution networks. acknowledgement: the paper is a part of the research done within the projects iii44004 and iii44006 supported by the ministry of education, science and technological development of the republic of serbia. the authors would like to thank prof. milutin p. petronijević for the help during setting up the experiments. 270 l. m. korunović, i. anastasijević references [1] l. m. korunović, power quality. niš, rs: faculty of electronic engineering, 2014. (in serbian) [2] s. đorđević, m. dimitrijević and v. litovski, "a non-intrusive identification of home appliances using active power and harmonic current", facta universitatis, series electronics and energetics, vol. 30, pp. 199–208, june 2017. [3] r. c. dugan, m. m. mcgranaghan, s. h. santoso and w. beaty, electrical power system quality. ny: mcgraw-hill, 2002. [4] e. agić, d. šljivac and b. agić, "the impact of the larger number of non-linear consumers on the quality of electricity", facta universitatis, series electronics and energetics, vol. 32, pp. 369–385, september 2019. [5] ieee, ieee standard 519-1992: ieee recommended practices and requirements for harmonic control in electrical power systems. ieee, 1993. [6] j. yong, l. chen and s. chen, "modelling of home appliances for power distribution system harmonic analysis", ieee trans. power del., vol. 25, pp. 3147–3155, october 2010. [7] c. f. m. almeida and n. kagan, "harmonic coupled norton equivalent model for modeling harmonicproducing loads", in proceedings of 14th international conference on harmonics and quality of power ichqp 2010. bergamo, it: ieee, 2010, pp. 1–9. [8] c. cresswell, steady state load models for power system analysis, phd thesis. edinburgh, uk: the university of edinburgh, dept. elect. eng., 2009. [9] m. j. h. rawa, d. w. p. thomas and m. sumner, "experimental measurements and computer simulations of home appliances loads for harmonic studies", in proceedings of 2014 uksim-amss 16th international conference on computer modelling and simulation. cambridge, uk: ieee, 2014, pp. 1–5. [10] j. niitsoo, i. palu, j. kilter, p. taklaja and t. vaimann, "residential load harmonics in distribution grid", in proceedings of 2013 3rd international conference on electric power and energy conversion systems. istanbul, tr: ieee, 2013, pp. 1–5. [11] s. bhattacharyya, j. f. g. cobben and w. l. kling, "harmonic current pollution in distribution grid", in proceedings of the 2010 ieee power and energy society general meeting. minneapolis, mn: ieee, 2010, pp. 1–8. [12] a. m. blanco, s. yanchenko, j. meyer and p. schegner, "impact of supply voltage distortion on the current harmonic emission of non-linear loads", dyna, vol. 82, pp. 150-159, august 2015. [13] s. cobben, w. kling and j. myrzik, "the making and purpose of harmonic finger-prints", in proceedings of the 19th international conference on electricity distribution. vienna, at: cired, 2007, pp. 1-4. [14] a. j. collin, advanced load modelling for power system studies, phd thesis. edinburgh, uk: university of edinburgh, dept. elect. eng., 2013. [15] t. g. reames, m. a. reiner and m. b. stacey, "an incandescent truth: disparities in energy-efficient lighting availability and prices in an urban u.s. county", appl. energy, vol. 218, pp. 95–103, may 2018. [16] b.-l. ahn, c.-y. jang, s.-b. leigh, s. yoo and h. jeong, "effect of led lighting on the cooling and heating loads in office buildings", appl. energy, vol. 113, pp. 1484–1489, january 2014. [17] s. a. rashid, z. haider, s. m. c. hossain, k. memon, f. panhwar, k. m. mbogba, p. hu and g. zhao, "retrofitting low-cost heating ventilation and air-conditioning systems for energy management in buildings", appl. energy, vol. 236, pp. 648-661, february 2019. [18] m. li, r. shan, m. hernandez, v. mallampalli and d. patiño-echeverri, "effects of population, urbanization, household size, and income on electric appliance adoption in the chinese residential sector towards 2050", appl. energy, vol. 236, pp. 293-306, february 2019. [19] j. c. lam, h. l. tang and d. h. w. li, "seasonal variations in residential and commercial sector electricity consumption in hong kong", energy, vol. 33, pp. 513–523, march 2008. [20] cenelec, en 50160:2010 + corrigendum december 2010 voltage characteristics of electricity supplied by public distribution systems, cenelec, 2010. [21] zes zimmer electronic systems, 4 channel power meter lmg450. oberursel, de: zes zimmer electronic systems gmbh, 2006. [22] iec, international standard iec 61000-4-7: electromagnetic compatibility (emc)  part 4-7: testing and measurement techniques  general guide on harmonics and interharmonics measurements and instrumentation, for power supply systems and equipment connected thereto. iec, 2000. [23] m. merkle, probability and statistics for engineers and students of technical sciences. belgrade, rs: academic mind, 2006. (in serbian). https://ieeexplore.ieee.org/xpl/conhome/5612395/proceeding https://ieeexplore.ieee.org/xpl/conhome/5612395/proceeding dependencies of current harmonics of some nonlinear load devices on rms supply voltage 271 appendix examined load devices:  led lamp with rated power of 11 w: general electric dimmable lamp, a60, 810 lm, 2700k.  intel pentium quad core laptop computer with charger input 100-240 v~; 1,4 a; 50-60 hz; and charger output 19,5 v dc; 2,31 a dc: hp 250 g3.  window type air-conditioner with rated power of 1500 w: frozzini, kfr 35 gw/a.  classic refrigerator with rated power of 72 w: obod, hl-145 ecolux. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 627-639 https://doi.org/10.2298/fuee1804627b a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications  biplab bag, priyabrata biswas, partha pratim sarkar department of engineering and technological studies, kalyani university, west bengal, india abstract. in this paper, a planar quad band monopole antenna excited by the microstrip line feed is proposed for l-band, wimax and wlan applications. the proposed antenna is composed of radiating element in the form of l, u and inverted lshaped strips on the top surface of substrate and defected ground plane on the bottom surface. by adjusting the length of the strips, the resonant frequencies can be reformed individually. the overall dimension of the prototype of the proposed quad band antenna is 50x35x1.6mm³. from the measured results it is found that the proposed antenna has exhibited four distinct operating bands (return loss less than -10db) of 170mhz (from 1.16 to 1.33ghz), 550mhz (from 1.53 to 2.08ghz), 470mhz (from 2.43 to 2.90ghz) and 3930mhz (from 3.77 to 7.70ghz). first two bands operated in l-band, third band can be used for wimax lower band (2.5ghz) and bandwidth of fourth band may be used for wlan (5.2/5.8 ghz) and wimax (5.5ghz) applications. it is also observed that the proposed antenna has good radiation patterns and acceptable gains over the whole operating bands. the design process and parametric analyses are explained with the help of simulation software hfss v.11. key words: defected ground plane, l-band, l-u and inverted l-shaped strip, quad band, wimax, wlan 1. introduction in the growth of wireless technology, microstrip antenna plays an important role. besides the bandwidth and gain improvement, multiband functionality is another challenging task in the domain of antenna design to integrate several frequency bands in a single antenna. to overcome this challenging task, researchers are trying to design an antenna in a limited antenna aperture with different structural configuration. therefore, many efforts have been so far found and some of the popular techniques are cutting a slot [1]-[4], pifa [5]-[9] and fractal [10]-[12] etc. printed monopole [13]-[19] antenna is a most attractive structure for multiband applications due to low profile, lightweight, low received march 25, 2018; received in revised form august 31, 2018 corresponding author: biplab bag department of engineering and technological studies, kalyani university, nadia-741235 west bengal, india (e-mail: bbagateie@gmail.com) 628 b. bag, p. biswas, p. p. sarkar cost, omnidirectional radiation pattern, easy to integrate into the microwave circuit board and also it exhibits wide impedance bandwidth. the monopole antennas with different configurations like l, u shaped slot [13], [14], inverted l-shaped strip type [15], arc shaped [16], complementary split ring [17], sinc type [18] and circular ring type [19] are reported for multiband operation. meanwhile, the above monopole antenna [13]-[19] covers, three bands. while the proposed antenna covers four distinct bands of l-band, wimax, and wlan. so, our intention is to design a multiple operation antenna with wide bandwidth. in this paper, a microstrip line fed quad band monopole antenna with the defected ground plane is proposed for l-band, wimax, and wlan applications. at the top surface of the substrate consists of three strips in the form of l, u and inverted l-shaped. at the bottom surface, slots have been cut for adjusting the resonant frequency and to minimize the antenna size. the proposed antenna is made by low cost fr4 epoxy substrate (relative permittivity of 4.4) with thickness of 1.6mm. the overall dimension of the proposed antenna is 50x35mm². the measured resonant frequencies are 1.27ghz, 1.72ghz, 2.59ghz, and 5.73ghz. the bandwidth of s11(db) ≤ -10db are 170mhz (from 1.16-1.33ghz), 550mhz (from 1.53-2.08ghz), 470mhz (from 2.43-2.90ghz) and 3930mhz (from 3.77-7.70ghz), which covers the l-band, wimax(2.5/5.5ghz) and wlan (5.2/5.8ghz) band. the gain and radiation pattern are also measured. by properly adjusting the dimension of the strips (l, u, inverted l) and the slots on the ground plane the resonant frequencies can be tuned. the design and parametric analyses are investigated by electromagnetic simulation software hfss v.11. the measured results are in good agreement. 2. evolution process the geometry of proposed antenna is shown in fig. 1. the top layer of the substrate consists of radiating strips in the form of l, u, and inverted l-shaped and microstrip line feed is used to excite the antenna. at bottom layer, slots are cut and a partial part of the copper plate has remained as a ground plane. the proposed antenna is made on a low-cost fr4 epoxy substrate (relative permittivity of 4.4) with the thickness of the antenna substrate is 1.6mm and loss tangent of 0.025. the overall dimension of the antenna substrate is 50x35mm. a 50ω microstrip feed line is used to excite the antenna to provide good frequency response over the operating range. the proposed quad-band antenna is developed by four consecutive steps, which is shown in fig. 2. the frequency response of the corresponding antennas is shown in fig. 3. the evolution started with #ant.1 consists of l-shaped strip and microstrip line feed (lf, wf), produced resonant frequency at about 2.65ghz (from 1.43-3.63ghz) with s11 (db) is -43.55db. the length of the l-shaped strip is equal to the quarter of a guided wavelength (λg/4). the resonant frequency of #ant.1 is theoretically estimated by the equation [20]: 2 1  e r g f c   (1) a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications 629 4 g stripl   (2) )2( 121 wlllstrip  (3) (a) (b) (c) fig. 1 the geometry of proposed antenna structure (a) top view (b) bottom view where c is the speed of light, fr the desired resonant frequency, λg the guided wavelength and εr the relative permittivity of the substrate. after that u-shaped strip is added to #ant.1 and reformed as #ant.2 which produced two resonant frequencies at 1.58ghz (from 1.04-2.59ghz) and 5.35ghz (from 4.746.43ghz). the simulated return loss of #ant.2 is shown in fig. 3. it is interesting to observe that after u-shaped strip (#ant.2) is added the resonant frequency of #ant.1 (2.65ghz) is shifted toward the lower frequency. this happened due to direct coupling between l and u-shaped strip by c. the length of u-shaped strip {(u1+u2+u3+u5+u4-c) ≈ (1.5+1.5+2.5+1.5+2.5-1)} is quarter of the guided wavelength for the resonant frequency of 5.35ghz. in #ant.3, an inverted l-shaped strip is added which produced another frequency band from 4.24-5.28ghz (centered at 4.74ghz), the corresponding return loss is shown in fig. 3. finally, slots have been cut on the ground plane to readjust the resonant frequency and to minimize the antenna dimension. the final simulated return loss of #ant.4 is also shown in fig. 3, the resonant frequencies are 1.15ghz (from 0.831.39ghz), 1.57ghz (1.46-1.81ghz), 2.66ghz (2.47-2.80ghz), 5.15ghz and 5.85ghz (4.27-6.10ghz). fig. 3 shows that the proposed antenna may cover simultaneously frequency range of l-band, wimax, and wlan applications. the corresponding frequency responses of all the antennas (#ant.1, #ant.2, #ant.3, and #proposed antenna) are described in table 2. 630 b. bag, p. biswas, p. p. sarkar fig. 2 evolution process of the proposed antenna in step by step fig. 3 simulation reflection coefficient of various antenna structure a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications 631 the length and width of the antenna parameters are finalized after large number of simulated results which are done by electromagnetic simulation software hfss version 11, based on finite element method. the corresponding parameter values are given in table 1. table 1 final dimension of the proposed antenna (all dimension in mm) parameters #proposed antenna parameters #proposed antenna parameters #proposed antenna wf 2.96 u2 1.5 s1 10 lf 22.2 u3 4 s2 5 lg 16 u4 1.5 s3 8 wg 35 u5 4 s4 8 l1 8.04 il1 1 s5 5 l2 6.5 il2 22 s6 10 w1 1.5 il3 7 t1 1.5 c 1 iw1 1.5 t2 9 u1 1.5 table 2 simulated frequency response of all the antennas resonant frequency (ghz) s11 (db) bandwidth (mhz) #ant.1 2.65 -43.55 2200(1.43-3.63) #ant.2 1.58 5.35 -29.16 -23.53 1550(1.04-2.59) 1690(4.74-6.43) #ant.3 1.2 4.74 5.65 -27.66 -28.54 -31.15 2030(0.73-2.76) 1040(4.24-5.28) 1400(5.47-6.87) #proposed antenna 1.15 1.57 2.66 5.15 5.85 -22.45 -17.7 -36.82 -36.36 -32.15 560(0.83-1.39) 350(1.46-1.81) 330(2.47-2.80) 1830(4.27-6.1) 2.1. parametric analysis in this section, the effects of primary parameters of radiating elements of the operating bands of proposed antenna are studied. the main characterizing parameters are l2, u3, u5, il3, il2, s3 and s4. the investigation is carried out by varying one parameter at a time while other parameters are kept fixed to their final dimension which is listed in the previous section. fig. 4 shows the effects of simulated return loss(db) for different values of l2. as l2 increased from 5.5mm to 7.5mm, the resonant frequency of upper band is shifted from 6.03ghz to 5.78ghz passing through 5.85ghz, while others frequencies remain almost the same to their original resonant frequencies. 632 b. bag, p. biswas, p. p. sarkar fig. 4 simulation reflection coefficient of proposed antenna with different values of l2 fig. 5 illustrates the return loss for various values of u3 and u5. as u3 and u5 increased from 1.5mm to 3.5mm, the first two bands shifted simultaneously from 1.27ghz, 1.67ghz to 0.99ghz, 1.43ghz. it is also be observed that the resonant frequency of upper band (5.85ghz) is shifted from 6.08ghz to 5.56ghz, as well as the bandwidth of this band is reduced by the factor of 6.55%. fig. 5 simulation reflection coefficient of proposed antenna with different values of u3 and u5 a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications 633 fig. 6, shows the effect on the characteristic of return loss vs. frequency for different values of il3. as il3 increased from 6mm to 8mm, two effects can be observed. first, the resonant frequency is decreased from 5.31ghz to 4.75ghz and second, the value of s11(db) of the second band (at 1.57ghz) is increased from -15.49db to -21.71db. so, the best performance of the proposed antenna can be obtained at il3=7mm. fig. 6 simulation reflection coefficient of proposed antenna with different values of il3 fig. 7, shows the simulated return loss of the proposed antenna with different values of il2. the other parameters are the same as above, except il2. the values of il2 effect on the resonant frequency of 5.15ghz, whereas all others resonant frequencies are almost unchanged. when il2 increased from 21mm to 24mm, the resonant frequency moved from 5.35ghz to 4.51ghz. fig. 7 simulation reflection coefficient of proposed antenna with different values of il3 634 b. bag, p. biswas, p. p. sarkar finally, the slot parameters (s3, s4) of the ground plane affects the return loss of the antenna, while other parameters are fixed and s3, s4 are changed simultaneously. the simulated return loss curves for different values of s3, s4 are shown in fig. 8. from the figure it is clear that the resonant frequency of third band (wimax 2.5ghz band) is shifted from 2.91ghz to 2.52ghz, as s3, s4 increased from 6mm to 9mm. fig. 8 simulation reflection coefficient of proposed antenna with different values of il3 3. experimental results the prototype of the proposed quad band antenna is depicted in fig. 9. the simulated and measured frequency response of proposed antenna is verified graphically in fig. 10 and tabular form, which is shown in table 3. the measurement has been done with the help of rohde & schwarz (zva 20) vector network analyzer. it is observed from the measured results that the proposed antenna resonates at four distinct frequencies of 1.27ghz (from 1.16-1.33ghz, percentage bandwidth is 13.38%), 1.72ghz (from 1.532.08ghz, percentage bandwidth is 31.97%), 2.59ghz (from 2.43-2.90ghz, percentage bandwidth is 18.14%) and 5.73ghz (from 3.77-7.70ghz, percentage bandwidth is 68.58%). the impedance bandwidth based on -10db return loss are about 170mhz, 550mhz, 470mhz and 3930mhz. clearly, the obtained bandwidth covers the requirement of l-band, wimax, and wlan applications satisfactorily. the discrepancy between the measured and simulated results may be appeared due to fabrication tolerance, dielectric losses, and low-quality sma connector. a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications 635 table 3 comparison between simulated and experimental results simulated measured resonant frequency (ghz) bandwidth (mhz) s11 (db) resonant frequency (ghz) bandwidth (mhz) s11 (db) 1.15 1.57 2.66 5.15 5.85 560 350 330 1830 -22.45 -17.70 -36.82 -36.36 -32.15 1.27 1.72 2.59 5.73 170 550 470 3930 -21 -16.94 -17.42 -25.99 (a) (b) fig. 9 photograph of proposed quad band antenna (a) top view (b) bottom view fig. 10 comparison of measured and simulated results of s11 (db) of proposed quad band antenna 636 b. bag, p. biswas, p. p. sarkar once achieved the resonant frequencies at 1.27ghz, 1.72ghz, 2.59ghz and 5.73ghz, the radiation patterns and gain are also measured at these frequencies. fig. 11 shows the measured far-field radiation pattern of e-plane and h-plane at 2.59ghz, and 5.73ghz. it is observed that the e-plane patterns are dipole (shape of 8) in nature whereas h-plane patterns are omni-directional. the simulated far-field normalized radiation patterns of proposed antenna is also illustrated in fig. 12, at 1.72ghz and 1.27ghz. (a) (b) fig. 11 measured far field radiation patterns in e-plane and h-plane at (a) 2.59ghz (b) 5.73ghz (a) (b) fig. 12 simulated far field radiation patterns in e-plane and h-plane at (a) 1.72ghz (b) 1.27ghz a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications 637 fig. 13 shows the measured gains at the desired frequency bands. the gains at 1.27ghz, 1.72ghz, 2.59ghz and 5.73ghz are 2dbi, 1.25dbi, 2.7dbi and 2.95dbi, respectively. fig. 13 measured gain (dbi) of proposed antenna in the operating region the performance comparison of the proposed antenna with some other reference antenna is shown in table 4. it is clearly seen that the proposed antenna has very good impedance bandwidth compared to the other works. table 4 a comparative study of proposed antenna with some reference antenna ref. (no. of bands) size mm³ bandwidth (mhz) gain (dbi) proposed antenna quadband 50x35x1.6 170(1.16-1.33ghz) 550(1.53-2.08ghz) 470(2.43-2.90ghz) 3930(3.77-7.70ghz) 2 1.25 2.7 2.95 [2] quad-band 20x30x1.6 840(1.79-2.63ghz) 480(3.49-3.97ghz) 930(4.92-5.85ghz) 530(7.87-8.40ghz) 2.5 to 6.9 [21] triple-band 38x25x1.59 300(2.4-2.7ghz) 1050(3.1-4.15ghz) 960(4.93-5.89ghz) 1.85 2.19 2.57 [22] quad-band 14x22x1.6 180(1.73-1.91ghz) 280(2.23-2.51ghz) 940(2.89-3.83ghz) 1310(4.88-6.19ghz) not specified [23] quad-band 71x52x1 360(1.1-1.46ghz) 680(2.23-2.91ghz) 540(3.41-3.95ghz) 720(5.24-5.96ghz) 9.48 2.15 3.5 6.48 [24] hexa-band 125x85x1.57 140(0.87-1.01ghz) 240(1.72-1.96ghz) 550(2.28-2.83ghz) 670(5.71-6.38ghz) 1.83 3.17 3.23 5.82 638 b. bag, p. biswas, p. p. sarkar 4. conclusion a planar quad-band monopole antenna has been proposed in this article. the proposed antenna has been designed with three strips in the form of l, u and inverted l which acts as a radiating element and defected ground plane with slots. the proposed antenna has a volume of 50x35x1.6mm³. the measured results show that the impedance bandwidths ≤10db of the proposed antenna are 170mhz, 550mhz, 470mhz and 3930mhz, which is sufficient for the requirement of l-band, wimax and wlan applications. so, the measured result implies that the proposed antenna is well suited for practical applications in desired bands with very good bandwidth. references [1] t. h. chang and j. f. kiang, "compact multi-band h-shaped slot antenna", ieee transactions on antennas and propagation, vol. 61, pp. 4345-4349, may 2013. [2] j. dong, x. yu and g. hu, "design of a compact quad-band slot antenna for integrated mobile devices", international journal of antennas and propagation, vol. 2016, pp. 1-9, june 2016. [3] y. f. cao, s. w. cheung and t. i. yuk, "a multiband slot antenna for gps/wimax/wlan systems", ieee transactions on antennas and propagation, vol. 63, pp. 952-958, january 2015. [4] l. xiong, p. gao and p. tang, "quad-band rectangular wide slot antenna for gps/wimax/wlan applications", progress in electromagnetics research c, vol. 30, pp. 201–211, 2012. [5] a. soliman, d. elsheakh, e. abdallah and h. e. hennawy, "multiband printed metamaterial inverted f antenna (ifa) for usb applications", ieee antennas and wireless propagation letters, vol. 14, pp. 297300, september 2014. [6] d. g. kang and y. sung, "compact hexa band pifa antenna for mobile handset applications", ieee antennas and wireless propagation letters, vol. 9, pp. 1127-1130, november 2010. [7] m. agarwal, r. singh and m. k. meshram, "linearly polarized planar inverted f-antenna for global positioning system and worldwide interoperability for microwave access applications", iet microwaves, antennas & propagation, vol. 7, pp. 991-998, september 2013. [8] d. m. elsheakh and e. a. abdallah, "compact multiband multifolded slot antenna loaded with printed ifa", ieee antennas and wireless propagation letters, vol. 11, pp. 1478-1481, december 2012. [9] c. k. wu, t. f. chien, c. l. yang and c. h. luo, "design of novel s-shaped quad-band antenna for medradio/wmts/ism implantable biotelemetry applications", international journal of antennas and propagation, vol. 2012, pp. 1-12, june 2012. [10] m. ram, s. das and l. r. yadava, "a quad band sierpinski trapezoidal fractal patch antenna for wireless applications", journal of microwaves, optoelectronics and electromagnetic applications, vol. 16, pp. 25-37, march 2017. [11] v. rajeshkumar and s. raghavan, "trapezoidal ring quad-band fractal antenna for wlan/wimax applications", microwave and optical technology letters, vol. 56, pp. 2545-2548, august 2014. [12] s. sivasundarapandian and c. d. suriyakala, "a planar multiband koch snowflake fractal antenna for cognitive radio", international journal of microwave and wireless technologies, vol. 9, pp. 335-339, march 2017. [13] m. moosazadeh and s. kharkovsky, "compact and small planar monopole antenna with symmetrical l and u-shaped slots for wlan/wimax applications", ieee antennas and wireless propagation letters, vol. 13, pp. 388-391, february 2014. [14] s. chen, m. fang, d. dong, m. han and g. liu, "compact multiband antenna for gps/wimax/wlan applications", microwave and optical technology letters, vol. 57, pp. 1769-1773, may 2015. [15] w. c. liu, c. m. wu and y. dai, "design of triple frequency microstrip fed monopole antenna using defected ground structure", ieee transactions on antennas and propagation, vol. 59, pp. 2457-2463, may 2011. [16] g. j. jo, s. m. mun, d. s. im, g. r. kim, y. g. choi and j. h. yoon, "novel design of a cpw-fed monopole antenna with three arc-shaped strips for wlan/wimax operations", microwave and optical technology letters, vol. 57, pp. 268-273, december 2015. a quad-band monopole antenna with defected ground plane for l-band/wimax/wlan applications 639 [17] r. pandeeswari and s. raghavan, "a cpw-fed triple band ocsrr embedded monopole antenna with modified ground for wlan and wimax applications", microwave and optical technology letters, vol. 57, pp. 2413-2418, july 2015. [18] r. k. badhai and n. gupta, "compact asymmetric coplanar strip fed sinc shaped monopole antenna for multiband applications", international journal of microwave and wireless technologies, vol. 9, pp. 205211, february 2017. [19] j. h. yoon and y. c. rhee, "modified three circular ring monopole antenna for wimax/wlan triple band operations", microwave and optical technology letters, vol. 56, pp. 625-631, january 2014. [20] r. karimian, h. oraizi, s. fakhte and m. farahani, "novel f-shaped quad-band printed slot antenna for wlan and wimax mimo systems", ieee antennas and wireless propagation letters, vol. 12, pp. 405408, march 2013. [21] j. pei, a. g. wang, s. gao and w. leng, "miniaturized triple band antenna with a defected ground plane for wlan/wimax applications", ieee antennas and wireless propagation letters, vol. 10, pp. 298-301, april 2011. [22] n. ojaroudi, m. ojaroudi and n. ghadimi, "a new design of printed monopole antenna with multiresonance characteristics for dcs/wlan/wimax applications", applied computational electromagnetics society journal, vol. 28, pp. 731-736, august 2013. [23] chandan, t. srivastava and b. s. rai, "multiband monopole u-slot patch antenna with truncated ground plane", microwave and optical technology letters, vol. 58, pp. 1949-1952, may 2016. [24] w. t. sethi, h. vettikalladi, h. fathallah and m. himdi, "hexa-band printed monopole antenna for wireless applications", microwave and optical technology letters, vol. 59, pp. 2816-2822, august 2017. facta universitatis series: electronics and energetics vol. 34, no 3, september 2021, pp. 445-460 https://doi.org/10.2298/fuee2103445s © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper introducing an optimal qca crossbar switch for baseline network reza sabbaghi-nadooshan department of electrical engineering, central tehran branch, islamic azad university, tehran, iran abstract. crossbar switch is the basic component in multi-stage interconnection networks. therefore, this study was conducted to investigate performance of a crossbar switch with two multiplexers. the presented crossbar switch was simulated using quantum-dot cellular automata (qca) technology and qca designer software, and was studied and optimized in terms of cell number, occupied area, number of clocks, and energy consumption. using the provided crossbar switch, the baseline network was designed to be optimal in terms of cell number and occupied area. also, the number of input states was investigated and simulated to verify accuracy of the baseline network. the proposed crossbar switch uses 62 qca cells and the occupied area by the switch is equal to 0.06µm2 and its latency equals 4 clock zones, which is more efficient than the other designs. in this paper, using the presented crossbar switch, the baseline network was designed with 1713 cells, and occupied area of 2.89µm2. key words: qca, crossbar switch, mux, baseline network, multi-stage interconnection networks, energy dissipation 1. introduction today, density of devices, power consumption, and speed of response are among challenges of designing electronic circuits. sizes of semiconductor devices have reached sub microns, increasing level of complexity in design of chips. according to moore's law, the number of transistors in a chip doubles every 18 months, meaning an increase in circuit density and power consumption in the chips [1]. the increase in density of the circuits means shrinking of the transistors inside the chips, and this shrinkage in complementary metal-oxidesemiconductor (cmos) technology increases leakage current and creates a short channel effect [2]. received january 11, 2021; received in revised form march 6, 2021 corresponding author: reza sabbaghi-nadooshan niayesh building, emam hasan blvd., pounak, tehran, iran e-mail: r_sabbaghi@iauctb.ac.ir 446 r. sabbaghi-nadooshan problems in downsizing cmos technology have led to introduction of new emerging technologies, such as fin field-effect transistor (finfet), carbon nanotube field-effect transistor (cntfet), and quantum-dot cellular automata (qca), among which qca technology can be the best alternative to cmos in designing of digital circuit [3-5]. qca cells are quantum cells that in binary state consist of four quantum wells and two electrons forming stable states of electrons for polarization in qca [6-8]. in qca cells, transfer of current from one cell to another is zero because electrons can only tunnel inside each cell, and information can only be transmitted through transfer of state from one cell to another. this technology has the least energy consumption due to the lack of current transfer between cells. the advantages of qca technology include high response speed, low occupied area, and low energy consumption, which will make this technology a leader in designing the future digital circuits [9]. among the circuits designed using qca, one can mention to design of adder circuits [10], serial-parallel converter [11], counter [12], serialin to serial-out (siso) shift register [13], multiplier [14], and comparator circuit [15]. another advantage of using qca is design of complex digital systems. parallel communication systems, multiprocessors, and design of network communication systems within chips can be mentioned as examples of complex digital systems [16-17]. in multiprocessor systems, communication between processors is required from input to output; this connection can be established through nodes in the network [18-20]. using control lines in each switch used in each node, path of data transfer from the desired input to output is specified. interconnection networks that can be implemented using qca technology include butterfly, dragonfly, beyond network, etc. in this study, an optimal crossbar switch is presented considering occupied area, the number of cells, and the amount of latency in the switch. then, interconnection structure of the baseline network will be presented using the proposed crossbar switch. in rest of the paper, section 2 describes the qca. the proposed crossbar switch and baseline network will be presented in section 3 and section 4. finally, section 5, concludes the paper. 2. qca the qca cell was first proposed by lent [21] and was developed in 1997 [22]. each qca cell contains four potential wells and two electrons enclosed in a square [23-25]. two electrons inside each square can freely tunnel between the quantum-dots in each cell, but electrons cannot leave the enclosed square and tunnel from one cell to another. data transfer in qca cells from one cell to another is done through external electrostatic energy and in fact, information is not transmitted through current. two stable states are formed based on placement of electrons in each qca cell creating -1 and +1 polarizations in the qca (steady state occurs in qca cells at the greatest distance between the electrons in each cell) [26-31]. fig. 1 depicts structure of the qca cell. optimal qca crossbar switch for baseline network 447 fig. 1 qca cell structure the qca uses clocks to control tunneling and data synchronization. the clock in qca has four phases: switch, hold, release, and relax [19, 25, 27]. fig. 2 illustrates phase clock in the qca. fig. 2 phase clock in qca in the switch phase, the potential of barrier slowly increases, and kinetic energy of the electrons decreases. after the switch phase, the cell will enter the hold phase, in which the barrier potential reaches the highest level and kinetic energy in this phase is almost zero. after the hold phase, the release phase occurs, in which the potential of barrier slowly begins to decrease, electrons are slowly released, and kinetic energy begins to increase. the next phase is the relax phase. in this phase, the potential level reaches its lowest point and electrons can tunnel freely inside the cell [19, 25, 27]. as mentioned, the qca cell has two polarizations of -1 and 1, which can be attributed to logic levels of 0 and 1, respectively, and basic gates of binary logic can be implemented by these polarizations in qca [6-8]. fig. 3 shows the basic gates in qca. fig. 3 basic gates in qca 448 r. sabbaghi-nadooshan 3. proposed crossbar switch in this section, at first, crossbar switch is designed and implemented and then, application of switch crossbar will be reviewed in the baseline network. in this study, qca designer software version 2.0.3 was used to simulate circuit and qcapro software was used to calculate energy consumption. the parameters used in qca designer software are as follows: number of samples: 50000 convergence tolerance: 0.001000 radius of effect (nm): 65 relative permittivity: 12.9 clock high: 9.8 e-22 clock low: 3.8 e-23 clock shift: 0 clock amplitude factor: 2.000000 layer separation: 11.500000 maximum literation’s per sample: 100 3.1. crossbar switch a crossbar switch is a digital system connecting an input to an output using a control line with respect to a pattern. this pattern is created using the control line, for example, if the control line is equal to 0, the input 1 information is transferred to output 1 and input 2 to output 2, or if the control line is equal to 1, input1 is transferred to output 2 and input 2 to output 1 as shown in fig. 4. using the crossbar switch, the connection between nodes can be created crosswise, and the control line is used to create a connection between the nodes in the form of a bar and cross. fig. 4 shows the two states of bar and cross configured using the control line. fig. 4 crossbar switch configuration table 1 shows truth table of a crossbar switch, which can be simplified by karnaugh map to provide a relationship between input and output of a crossbar switch. eqs. 5 and 6 are related to crossbar switches, and each of the outputs op0 and op1 shows a 2:1 multiplexer relationship, and each multiplexer (mux) is controlled across the control line. optimal qca crossbar switch for baseline network 449 table 1 truth table for crossbar switch control line ip1 ip0 op1 op0 0 0 0 0 0 0 0 1 0 1 0 1 0 1 0 0 1 1 1 1 1 0 0 0 0 1 0 1 1 0 1 1 0 0 1 1 1 1 1 1 0 0 1. .= +op ip c ip c (1) 1 0 1. .= +op ip c ip c (2) fig. 4 shows the states created in data transfer in a crossbar switch, which uses eqs. 1 and 2 to design such a switch. these two equations indicate the existence of two multiplexers in the crossbar switch, which can be used to create states in the crossbar switch using the control line. fig. 5 shows wiring of a crossbar switch by two multiplexers, using eqs. 1 and 2. fig. 5 crossbar switch using two multiplexers fig. 6 shows the mux circuit used in this study. fig. 7 shows simulation results of the mux. in the used mux, if c=0, the output will be equal to ip1 and if c=1, the output will be equal to ip0. fig. 6 mux circuit 450 r. sabbaghi-nadooshan fig. 7 mux simulation result in the following, design of the crossbar switch using qca is presented. fig. 8 shows implementation of the crossbar switch using qca technology, and fig. 9 illustrates the simulation results for the crossbar switch. in table 2, the values obtained from measuring number of cells, occupied area, and latency in the proposed crossbar switch are compared with those reported by the other previous works. fig. 8 crossbar switch with qca optimal qca crossbar switch for baseline network 451 fig. 9 result simulation for crossbar switch fig. 9 illustrates transfer of input to output, where for c=0 the ip0 and ip1 data are transferred to op0 and op1, respectively (shown with a red square in fig. 9). for c=1, ip0 data are transferred to op1 and ip1 data are transferred to op0, as shown in fig. 9 with a blue square. table 2 compare crossbar switch with other work structure parameters cell count total area (µm2) latency (clock zone) crossbar switch [18] 101 0.096 8 crossbar switch [19] 157 0.25 6 crossbar switch [20] 123 0.137 8 crossbar switch [36] 81 0.08 4 crossbar switch this work 62 0.06 4 according to table 2, the proposed crossbar switch has an optimized design in terms of cell number, occupied area, and latency. in the circuit designed in this study, 62 cells were used with an occupied area of 0.06µm2 and latency equal to 4 zone clocks or one clock pulse . 3.2. energy dissipation on crossbar switch in this section, energy in the proposed crossbar switch designed using qca cell will be investigated. in calculation of the consumed energy, the hamiltonian matrix is needed, which is obtained using the hartree-fock approximation. eq. 7 shows the hamiltonian 452 r. sabbaghi-nadooshan matrix in qca [32, 33]. in eq. 3, p is the polarization value in binary qca that is equal to 1 or -1; ek is the kinetic energy, and j is the tunneling energy in qca. h(j) = 2 2   − −      −    k j k j e p j e j p   (3) energy value of the qca cell can be measured by calculating the hamiltonian matrix and quantum measurement in the qca. herein, the amount of dissipated energy was calculated using qca pro software. energy dissipation was calculated for the values of 0.5ek, 1 ek and 1.5 ek, as shown in table 3. fig.10 depicts thermal layout of crossbar switch circuit for energy dissipation. (a) (b) (c) fig. 10 thermal layout for average energy dissipated in crossbar switch circuit. a) thermal layout for 0.5ek. (b) thermal layout for 1ek. (c) thermal layout for 1.5ek table 3 energy dissipation for crossbar switch circuit γ/ek 0.5 1 1.5 avg ediss (mev) 109.19 133.85 166.17 max ediss (mev) 219.46 227.44 244.82 min ediss (mev) 17.14 55.24 100.20 optimal qca crossbar switch for baseline network 453 4. baseline network in the previous section, a crossbar switch was simulated using two multiplexers and was studied in terms of cell number, occupied area, latency, and consumed energy. now, the baseline network is simulated using the proposed crossbar switch, and the proposed baseline network is investigated for several selected states. baseline network is one of various types of multistage interconnection networks (mins) and a subset of delta network, consisting of several layers, and each layer includes several 2×2 switches [34, 35]. each baseline network consists of 2q rows and q+1 set, and each node contains a 2×2 switch. the baseline network is presented in the form of 2×8, which has eight inputs and eight outputs, as designed using a crossbar switch. fig. 11 shows the building block of baseline network. fig. 11 baseline network diagram 4.1. implementation of baseline network by qca the aim of the present study was presenting and implementing a baseline network optimally in terms of the number of cells and occupied area, simulating the target baseline network using qca technology and qca designer software. in this simulation, the proposed baseline network has eight inputs, eight outputs, and 12 crossbar switches. fig. 12 illustrates the designed baseline network by qca technology. in the simulated baseline network, 1713 qca cells were used, the occupied area by the baseline network was equal to 2.89µm2 and the latency was equal to 5 clocks or 20 clock zones. table 4 presents the parameterized results in the baseline network and compares the results. table 4 baseline network comparison results structure parameters cell count total area (µm2) latency (clock zone) baseline network [19] 2491 3.85 18 baseline network with this work 1713 2.89 20 454 r. sabbaghi-nadooshan fig. 12 designed baseline network with qca 4.2. simulation scenarios in simulation of the baseline network, eight input lines and 12 control lines were used. a large number of inputs and control lines cause the displayed waveform to be distorted, for this reason, vector table setup of the qca designer software was used to display the waveforms. in this regard, vector table setup forms were used to display inputs and control lines. in the first scenario, all the control inputs are equal to 0. the simulation results are shown in fig. 13, in which the input data have been transported in the output. table 5 shows the input-to-output transmissions done by control lines. fig. 13 illustrates latency of the baseline network with the purple box. latency was equal to 5 clock pulses as shown in fig. 13. the baseline network outputs are shown with the red box. table 5 state of input to output transport in the first scenario input output i0 op0 i1 op4 i2 op2 i3 op6 i4 op1 i5 op5 i6 op3 i7 op7 optimal qca crossbar switch for baseline network 455 fig. 13 output result for input state of first scenario according to fig. 13 and table 5, for all control lines to be zero, information i0 to op0, i1 to op4, i2 to op2, i3 to op6, i4 to op1, i5 to op5, i6 to op3, i7 will be transferred to op7. in the second scenario, all control inputs are 1 and the results are shown in fig. 14. table 6 shows the input-to-output transmissions. 456 r. sabbaghi-nadooshan fig. 14 output result for input state of second scenario table 6 state of input to output transport in the second scanrio input output i0 op7 i1 op3 i2 op5 i3 op1 i4 op6 i5 op2 i6 op4 i7 op0 optimal qca crossbar switch for baseline network 457 according to fig. 14 and table 6, for all control lines to be 1, information i0 to op7, i1 to op3, i2 to op5, i3 to op1, i4 to op6, i5 to op2, i6 to op4, i7 will be transferred to op0. fig. 15 output result for input state of third scenario in the third scenario, control input c31 and c32 are 1 and other control lines are 0 and simulation results are shown in fig. 15. table 7 depicts the input-to-output transmissions that are done by control lines. fig. 15 illustrates the latency of the baseline network and the outputs of baseline network. in the simulation results of fig. 15, the latency is equal to 5 clock pulses. 458 r. sabbaghi-nadooshan table 7 state of input to output transport in the third scenario input output i0 op1 i1 op4 i2 op3 i3 op6 i4 op0 i5 op5 i6 op2 i7 op7 according to figs. 15 and table 7, control lines c31 and c32 are 1 and other control lines are 0, and information will be transferred as table 7. 5. conclusion in this paper, an optimized crossbar switch was studied in terms of cell number, occupied area, number of clocks, and energy consumption. the switch uses 62 qca cells and the occupied area by the switch is equal to 0.06µm2 and latency is equal to 4 clock zones, which is more efficient than the other designs presented in the literature. in the provided switch, the amount of consumed energy for 0.5ek, 1ek, and 1.5ek was calculated by qca pro software. then, the baseline network was designed with 1713 cells and occupied area of 2.89µm2 using the presented crossbar switch. for validating data transfer in the simulated baseline network, three scenarios were considered. in the first scenario, all the control lines are equal to 0 where the information from i0 to op0, i6 to op3, i7 will be transferred to op7. in the third scenario, control input c31 and c32 are equal to 1 and other controls are equal to 0 where information from i0 to op1, i1 to op4, i2 to op3, i3 to op6, i7 will be transferred to op7. the baseline network was optimized in terms of the number of cells and occupied area, but the amount of zone clock was increased and for correct operation of the designed baseline network, states such as input and control lines were applied to the baseline network, and the input corresponding to the control lines was transferred to the output. therefore, it can be concluded that the proposed crossbar switch can be used in optimizing other networks. references [1] g.e. moore, mcgraw-hill new york, ny, usa, 1965. [2] t.j.k. liu, k. kuhn, cmos and beyond: logic switches for terascale integrated circuits, cambridge university press, 2015. [3] s. garg, t.k. gupta, “a 4: 1 multiplexer using low-power high-speed domino technique for large fan-in gates using finfet”, circuit world, 2020. [4] d.k. nandhaiahgari, r.p. somineni, c.r. kumari, “design and analysis of different full adder cells using new technologies”, international journal of reconfigurable and embedded systems, vol. 9, p. 116, 2020. [5] r. sabbaghi-nadooshan, z. shahosseini, d. rezaeipour, “design of new qca lfsr and nlfsr for grain-128 stream cipher”, journal of circuits, systems and computers, vol. 25, p. 1650005, 2016. https://doi.org/10.1108/cw-09-2019-0128 optimal qca crossbar switch for baseline network 459 [6] s. zoka, m. gholami, “two novel d-flip flops with level triggered reset in quantum dot cellular automata technology”, international journal of engineering transactions c: aspects, vol. 31, no. 3, pp. 415–421, 2017. [7] j. iqbal, f. khanday, n. shah, “design of quantum-dot cellular automata (qca) based modular 2n−1−2nmux-demux”, in proceedings of the impact-2013, 2013, pp. 189–193. [8] s. kamrani, s.r. heikalabad, “a unique reversible gate in quantum-dot cellular automata for implementation of four flip-flops without garbage outputs”, international journal of theoretical physics, vol. 57, pp. 3340–3358, 2018. [9] f. ahmad, “an optimal design of qca based 2n: 1/1: 2n multiplexer/demultiplexer and its efficient digital logic realization”, microprocessors and microsystems, vol. 56, pp. 64–75, 2018. [10] h.r. roshany, a. rezai, “novel efficient circuit design for multilayer qca rca”, international journal of theoretical physics, vol. 58, pp. 1745–1757, 2019. [11] l.e. arani, a. rezai, “novel circuit design of serial–parallel multiplier in quantum-dot cellular automata technology”, journal of computational electronics, vol. 17, pp. 1771–1779. [12] m.n. divshali, a. rezai, s.f.h. samidpour, “design of novel coplanar counter circuit in quantum dot cellular automata technology”, international journal of theoretical physics, vol. 58, pp. 2677–2691. [13] m.n. divshali, a. rezai, a. karimi, “towards multilayer qca siso shift register based on efficient dff circuits”, international journal of theoretical physics, vol. 57, pp. 3326–3339, 2018. [14] s.m. mohaghegh, r. sabbaghi-nadooshan, m. mohammadi, “design of a ternary qca multiplier and multiplexer: a model-based approach”, analog integrated circuits and signal processing, vol. 101, no. 1, pp. 23–29, 2019. [15] a. shiri, a. rezai, h. mahmoodian, “design of efficient coplanar comparator circuit in qca technology”, facta universitatis, series: electronics and energetics, vol. 32, 119–128, 2019. [16] r. sabbaghi-nadooshan, m. modarressi, h. sarbazi-azad, “the 2d digraph-based nocs: attractive alternatives to the 2d mesh noc”, the journal of supercomputing, vol. 59, no. 1, pp. 1–21, 2012. [17] r. sabbaghi-nadooshan, a. patooghy, “analytical performance modeling of de bruijn inspired meshbased network-on-chips”, microprocessors and microsystems, vol. 39, no. 1, pp. 27–36, 2015. [18] j.c. das, d. de, “design of single layer banyan network using quantum-dot cellular automata for nanocommunication”, optik, vol. 172, pp. 892–907, 2018. [19] m.a. tehrani, f. safaei, m.h. moaiyeri, k. navi, “design and implementation of multistage interconnection networks using quantum-dot cellular automata”, microelectronics journal, vol. 42, pp. 913–922, 2011. [20] j.c. das, d. de, “circuit switching with quantum-dot cellular automata”, nano communication networks, vol. 14, pp. 16–28, 2017. [21] c.s. lent, p.d. tougaw, w. porod, g.h. bernstein, “quantum cellular automata”, nanotechnology, vol. 4, p. 49, 1993. [22] a. orlov, i. amlani, g. bernsten, c. lent, g. snider, “realization of a functional cell for quantum-dot cellular automata”, science, vol 277, pp. 928–930, 1997. [23] z. mohammadi, k. navi, r. sabbaghi-nadooshan, “design of testable reversible latches by using a novel efficient implementation of fredkin gate”, international journal of electronics, vol. 107, no. 6, pp. 859– 878, 2020. [24] z. taheri, a. rezai, h. rashidi, “novel single layer fault tolerance rca construction for qca technology”, facta universitatis, series electronics and energetics, vol. 32, no. 4, pp. 601–613, 2019. [25] r. kianpour, r. sabbaghi-nadooshan, “novel design of n-bit controllable inverter by quantum-dot cellular automata”, international journal nanoscience and nanotechnology, vol. 10, no. 2, pp. 117– 126, 2014. [26] j.r. monfared, a. mousavi, “design and simulation of nano-arbiters using quantum-dot cellular automata”, microprocessors and microsystems, vol. 72, p. 102926, 2020. [27] m. abutaleb, “a novel qca shuffle-exchange network architecture with multicast and broadcast communication capabilities”, microelectronics journal, vol. 93, 104640, 2019. [28] r. kianpour, r. sabbaghi-nadooshan, “optimized design of multiplexor by quantum-dot cellular automata”, international journal nanoscience and nanotechnology, vol. 9, no. 1, pp. 15–24, 2013. [29] j.c. das, d. de, “nanocommunication network design using qca reversible crossbar switch”, nano communication networks, vol. 13, pp. 20–33, 2017. [30] l. silva, l. sardinha, m. vieira, l. vieira, o.v. neto, “robust serial nanocommunication with qca”, ieee trans. nanotechnol., vol. 13, no. 3, pp. 464–472, 2015. [31] h.a. mousavi, p. keshavarzian, a.s. molahosseini, “a novel fast and small xor-base full-adder in quantum-dot cellular automata”, appl nanosci, vol. 10, pp. 4037–4048, 2020. javascript:void(0) javascript:void(0) javascript:void(0) javascript:void(0) javascript:void(0) javascript:void(0) javascript:void(0) javascript:void(0) http://www.ijnnonline.net/article_6117.html http://www.ijnnonline.net/article_6117.html http://www.ijnnonline.net/article_3875.html http://www.ijnnonline.net/article_3875.html 460 r. sabbaghi-nadooshan [32] s. srivastava, s. sarkar, s. bhanja, “power dissipation bounds and models for quantum-dot cellular automata circuits”, in proceedings of the sixth ieee conference on nanotechnology, 2006, vol. 1, pp. 375-378. [33] j. timler, c.s. lent, “power gain and dissipation in quantum-dot cellular automata”, journal of applied physics, vol. 91, pp. 823–831, 2002. [34] j. duato, s. yalamanchili, l.m. ni, “interconnection networks: an engineering approach”, morgan kaufmann, 2003. [35] d. tutsch, m. marcus brenner, “min simulate. a multistage interconnection network simulator”, in proceedings of the 17th european simulation multiconference: foundations for successful modelling & simulation, 2003, pp. 211–216. [36] a. chandrasekaran, k. senthil kumar, k. hemalatha, k.s. tamilselvan, p. umarani, “design of coplanar circuit switching network in quantum dot cellular automata”, international journal of recent technology and engineering, vol. 8, no. 4, pp. 10611–10619, 2019. javascript:void(0) javascript:void(0) https://www.google.com/search?tbo=p&tbm=bks&q=inauthor:%22jos%c3%a9+duato%22 https://www.google.com/search?tbo=p&tbm=bks&q=inauthor:%22sudhakar+yalamanchili%22 https://www.google.com/search?tbo=p&tbm=bks&q=inauthor:%22lionel+m.+ni%22 javascript:void(0) 13489 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 13 40 https://doi.org/10.2298/fuee2601013h © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper performance analysis of lead acid battery health using kalman residuals through the development of smart monitoring system for electric three-wheelers suman haldar1, arindam mondal2, rajib banerjee3 1nitmas, department of electronics and communication engineering, india 2bcrec, department of electrical engineering, india 3upes, department of computer science, india orcid ids: suman haldar https://orcid.org/0000-0002-7073-323x arindam mondal https://orcid.org/0000-0003-3210-1685 rajib banerjee https://orcid.org/0000-0003-0685-5977 abstract. monitoring battery health is an important aspect of accurately predicting the operational lifespan of batteries in electric vehicles. the battery terminal voltage, current, and temperature are the primary factors influencing battery durability and determine how long it will last before failure occurs. for commercially viable electric three wheeler (e3w), an economical yet highly precise data acquisition system (daq) is crucial. currently, commercially available lead-acid (pba) battery-powered e3ws lack a dedicated daq for the continuous monitoring of battery performance. in this research we develop “smdaq” a smart multichannel daq to address this gap, enabling real-time monitoring of these critical parameters. the system is specifically designed for the pba batteries commonly used in e3ws. the prototype uses a noninvasive, dualpolarity-based current sensing technology to distinguish between charging and discharging cycles, detecting high current discharges up to 60a. it also incorporates custom temperature sensor probes capable of measuring temperatures up to 60ºc in multiplexed mode. the system records terminal voltage up to 16.5v and traction battery pack voltage up to 66v using the node voltage subtraction method for accurate monitoring. integrated with a data transmission and backup mechanism, the smdaq system stores data locally in flash memory and remotely on the cloud, offering userfriendly queries for battery parameters. it features discharge analysis and state of health (soh) assessment using a data-driven root mean square error (rmse) and kalman filter residual approach under varying discharge conditions. battery anomalies are analyzed under different c-rate and depth of discharges. with 98.6% accuracy, prototypes have been tested for over 1000 hours, ensuring reliable performance. key words: data acquisition system, battery monitoring system, state of health, microcontroller, electric three-wheeler. received february 24, 2025; revised april 24, 2025 and may 15, 2025; accepted may 16, 2025 corresponding author: arindam mondal department of electrical engineering, dr. b.c roy engineering college, durgapur-713206,india e-mail: arininstru@gmail.com 14 s. haldar, a. mondal, r. banerjee 1. introduction in response to environmental and energy challenges, battery-operated vehicles (bovs) have emerged as a sustainable alternative to internal combustion engine (ice) vehicles, offering zero emissions, lower operating costs, and up to 77% overall efficiency compared to ice counterparts [1][2][3]. the e3w market in the asia-pacific region is projected to reach 702.1 thousand units by 2027, with a cagr exceeding 20%, driven by lower maintenance costs and increased adoption for last-mile transport and logistics, especially in rural and suburban areas [4]. e3ws predominantly use lead-acid (pba) and lithium-ion batteries (lib), with pba favored due to its low cost, proven reliability, and specific power range of 75–200 w/kg. the advanced pba variants like vrla gel and agm have improved performance and offer maintenance-free solutions [5], playing a crucial role in the operational efficiency and affordability of e3ws in suburban and rural areas of the asia pacific region [6].therefore, significant advancements are still needed for bovs to reach the efficiency and affordability of traditional ice vehicles. extending battery longevity plays a crucial role in reducing overall running expenses. as a result, researchers are dedicated to designing better battery monitoring and management systems to maximize battery life [7]. accurate monitoring of battery health, including remaining useful life (rul), is essential for predictive maintenance and efficient operation [8][9].onboard batteries of bovs experience electrical stress during operation due to inconsistent current demands, which can lead to issues such as deep discharge and the need for frequent battery replacements [10]. however, this excessive discharging may lead to transient short circuits, which ultimately reduce the load terminal voltage and consequently the battery capacity [11]. additionally, thermal effects from overcharging can accelerate chemical degradation, adversely affecting state of health (soh) [12][13]. in this context, an exact measurement and effective battery parameters monitoring system are crucial to predict the lifespan of on board vehicle batteries. to address the battery behavior throughout its charging and discharging cycle, a realtime monitoring system is more relevant for continuously tracking and recording key parameters such as voltage, current, and temperature. simultaneously, it alerts vehicle operators based on pre assigned battery data markers ensuring timely intervention, safety compliance, reducing operational costs, and addressing intermittent battery issues. this paper presents the design and development of iot based smart multichannel data acquisition system (smdaq). this cost-effective highly accurate device measures and monitors critical parameters of the onboard pba battery pack used as a main power source for e3w vehicles. in addition to its primary function, smdaq serves as a data-driven performance forecasting tool and offers crucial findings for both e3w owners and manufacturers to diagnose battery-related issues and optimize battery performance. 1.1. literature survey battery life plays a vital role in the overall cost of operating bovs, as frequent replacements remain one of the major expenses. to manage battery degradation, the state of health (soh) is used, calculated as the ratio between current and initial maximum capacity in ampere-hours, while the state of charge (soc) indicates the available capacity at any moment [14]. these parameters are essential in influencing a vehicle’s performance, range, charging efficiency, and safety [15][16]. lead-acid (pba) batteries continue to dominate the rechargeable battery market, accounting for over 70% of global sales, due to their affordability and mature technology. as battery health directly impacts vehicle performance analysis of lead acid battery health using kalman residuals... 15 reliability, various soh estimation techniques have been explored, including model-based, direct measurement, and data-driven approaches to prevent failure and enhance predictive maintenance [17]. a critical extension of soh evaluation is the estimation of remaining useful life (rul), which helps in optimizing charge-discharge cycles and extending operational lifespan [18]. to improve prediction accuracy, recent studies have increasingly adopted artificial intelligence techniques for rul estimation, integrating big data, ai, and iot for more dynamic and diverse assessment frameworks and physics-informed approaches [19]– [23]. in fact, study focuses on direct measurement and model-based methodologies, where soh estimation is primarily conducted using battery capacity, power, internal resistance, and key performance indicators like voltage, current, and temperature [24]. advances in deep neural networks (dnns) have enabled statistical models for soh and rul estimation, with long short-term memory (lstm) networks achieving rul accuracy within ±10 cycles [25]. temporal convolutional networks (tcns) have also been introduced for soh and rul monitoring, using causal and dilated convolutions to enhance performance [26]. battery performance parameters such as voltage and current are closely tied to internal resistance and load demand. sudden voltage drops during current spikes indicate aging and degradation trends, while current fluctuations help identify overloading and usage anomalies [27]. electrolyte temperature is another critical factor affecting soh, as excessive heat from overcharging or high operating loads can accelerate chemical breakdown and reduce efficiency [28][29]. numerous battery monitoring systems have been proposed to address these challenges. for instance, one study implemented a gsm-based bms for a 12.8v, 10ah lifepo₄ battery, enabling remote transmission of key parameters [30]. another system used esp8266 and the thingspeak cloud to monitor a 28ah lithium-ion battery in an electric two-wheeler application [31]. a more complex setup employed raspberry pi, esp8266, and arduino for low-current monitoring on a 26ah pba battery, though limited by cost and the absence of transient current detection [32]. hybrid approaches combining machine learning and sensing technologies have also emerged. one lab-based daq system integrated with a thermistor, irlz44n mosfet, cd74hc4067 multiplexer, atmega 328 microcontroller, and esp8266 wifi was used to monitor lithium-ion battery voltage and temperature with overvoltage protection features, though it lacked capabilities for transient current measurement and detailed discharge trend analysis [33]. similarly, a real-time iot-based solution was proposed for high-capacity pba batteries above 65ah, but it was unsuitable for smaller-capacity applications [34]. another study incorporated lora communication and ml to predict rul in 1400mah li-ion batteries with high accuracy, yet lacked real-world testing under high-discharge cycles [35].realtime daq systems are increasingly important for bovs to track soc, soh, and thermal states, enabling predictive maintenance, fault detection, and analysis of usage patterns. one such system designed for e3ws employed esp32, acs712, and lm35 sensors to measure discharge up to 30a but did not account for transient spikes or the impact of driving cycles [36]. moreover, iot-enabled platforms with gps, gprs, and motion sensors integrated via obd-ii ports have been proposed to assess vehicle behavior, route efficiency, and fleet performance [37][38]. lastly, a critical gap remains between laboratory testing and real-world battery performance. a study emphasized the need for long-term experimental testing by analyzing field data collected over a year, revealing how driving behaviors, braking, acceleration, and ambient conditions influence soh estimation and battery lifespan [39]. 16 s. haldar, a. mondal, r. banerjee 1.2. research gap and contribution most existing battery monitoring systems rely on laboratory-based methods such as simulation and modeling. these approaches measure nominal voltage, current, and temperature under controlled environments for lithium-ion (li-ion) and lead-acid (pba) batteries. however, real-world conditions introduce complexities that lab-based methods fail to address, such as varying discharge rates (c rate), partial charging and discharging, and extended rest periods. these inconsistencies make it challenging to accurately determine the state of health (soh) and state of charge (soc) using direct measurement techniques or machine learning models, which require high-quality real-world data for precise predictions. the key contributions are as follows: ▪ the development of the smdaq system enables the monitoring of individual terminal voltages (16.5v), pack voltage (66v), current (60a), and temperature (60°c) for comprehensive battery diagnostics. ▪ data backup and retransmission (dbr) feature combined with a customized web application for real-time visualization and interpretation of field data. ▪ analysis of dod and c-rate discharging behavior for real-time performance evaluation. ▪ a dual-method soh estimation framework combining rmse and kalman filter residual analysis for accurate battery health assessment. the paper is organized as follows: section 2 outlines the system design and hardware architecture. software architecture and system operation are detailed in section 3 results and discussion are presented in section 4, followed by the conclusion in section 5. 2. system design and hardware architecture for the measurement of soh of lead-acid batteries smdaq is a portable battery parameter monitoring device featuring multiple analog input channels. these input channels are primarily intended for real-time data capturing and monitoring of onboard battery terminal voltage, current, and temperature at various drive cycles of e3w. the functioning and design of smdaq hardware circuits allow for the measurement and monitoring of a variety of battery parameters in a wide-span measurement without significantly modifying the hardware circuit. this is achieved by its customized program code, which guarantees operational versatility. the specifications of smdaq are illustrated in table 1. smdaq is an energy-efficient monitoring device consuming only 550 mw of power. the prototype measures voltage up to 66v at the pack level and 16.5v at the node level. this range is aligned with the pba batteries during the bulk and absorption phase of the charging process. it supports the current range of up to 100a with an operation range of 50–60a during discharge of the e3w battery under different drive cycles. additionally, custom-made temperature sensing probes are designed to monitor the battery's electrolyte temperature up to 60°c during both charging and discharging cycles. it offers measurement accuracy of ±2% (voltage), ±1.4% (current), and ±2°c (temperature). data is logged at 130kb/hr with a recording frequency of up to 0.5 hz and stored via microsd with ds3231 rtc for backup and retransmission. therefore, smdaq provides a comprehensive battery monitoring solution that enhances energy optimization, contributing to improved performance and extended battery life of e3w. performance analysis of lead acid battery health using kalman residuals... 17 table 1 specifications of smdaq specifications details specifications details power consumptions 550 mw (for continuous operation) current measurement range up to 100 a with dual polarity indication (+ for discharging, for charging) power supply 5v dc (powered via e3w onboard battery) temperature range 0°c to 60°c (battery electrolyte temperature monitoring) operating conditions suitable for various e3w drive cycles accuracy ±2% (voltage), ±1.4 % (current), ±2°c (temperature) data recording rate 130kb/hr and configurable up to 0.5 hz (data recorded and updated every 2second) communication interfaces spi/i2c/twi/usb and web-based gui for real-time visualization and interpretation of data data backup and retransmission (dbr) integrated micro sd storage with ds3231rtc module for data backup and retransmission with thirdparty data server sensor type wcs 1600 current sensor, four-channel temperature sensing probes, resistive divider network input voltage range 0-16.5v (individual battery) and up to 66v (pack level) connectivity protocol ieee802.11 2.1. system level description figure 1 shows the system-level block diagram of the smdaq daq. the architecture includes seven key components: battery voltage sensing, current sensing, temperature probes, memory and real-time clock (rtc) interface, signal multiplexing and conditioning, microcontrollers, and a cloud-based monitoring interface. the core of the system is an atmega328p 8-bit microcontroller, which manages all sensing operations. battery voltages are monitored using a four-channel sensor network with low-pass filters and diode protection. charging/discharging current is measured using a non-invasive sensor followed by a second-order low-pass filter for noise reduction. custom temperature probes interface with a conditioning circuit for accurate thermal monitoring. an analog multiplexer handles multiple inputs (voltage, current, temperature), minimizing the need for multiple adcs and reducing system complexity and cost. wireless data transmission and cloud integration are handled by an esp8266 microcontroller, which communicates with the atmega328p via uart and connects to the internet over ieee 802.11. the system also features onboard memory and rtc for data backup and time stamping. real-time data is visualized through a user-specific cloud interface, ensuring reliable and continuous battery health monitoring. 18 s. haldar, a. mondal, r. banerjee fig. 1 system-level block diagram of smdaq data acquisition system 2.2. smdaq hardware component and design figure 2 illustrates the schematic diagram of the smdaq. the system is built around the atmega328p microcontroller, selected for its cost-efficiency and balanced features including 16 mhz clock speed, 32 kb flash, 10-bit adc, and multiple i/o pins (20).a 7805 voltage regulator provides a +5v regulated supply, protected by a 250 ma ptc fuse (1206l025yr), with an led d1 indicator for power status. battery voltages are accessed via a five-pin screw terminal connected to a four-series connected battery pack (btn1– btn4, gnd). each terminal connects to a voltage divider network with a low-pass filter and zener diode for protection. filtered outputs is then applied to the atmega 328 pin 23 (adc0), pin-24(adc1), and pin 25(adc2) for bn1, bn2, and bn3 respectively. whereas, a filtered signal of bn4 is fed to the pin-14 of cd4051 analog mux.current is sensed using a wcs1600 non-invasive sensor, buffered by an mcp6002 op-amp and filtered using a 2nd-order sallen-key low-pass filter. the filtered current signal connects to pin 13 of the cd4051.temperature sensing is handled by lm35 probes, each conditioned with an lm358 op-amp in a low-gain configuration.the output of the temperature sensing probes is connected to the pin-15,12,1 and 5 of cd4051 analog mux through the j2 terminal block.the cd4051’s select lines (pins 9–11) are controlled by atmega328p digital pins 2, 3, and 4, with the multiplexer output connected to pin 26 (adc3).the rtc module (ds3231) provides timestamps via i2c, connected to pins 28 (scl/adc5) and 27 (sda/adc4) of the atmega328p. a micro sd card module is used for data backup and dbr implementation, connected via spi: pins 16–19 (ss̅̅ ̅,mosi, miso, sck) to cs, d1, do, and clk respectively. for wireless communication, atmega328p interfaces with node mcu esp8266 over uart. pins 6 (tx) and 11 (rx) of atmega328p connect to d6 and d5 of esp8266 for bidirectional battery data transmission over ieee 802.11. performance analysis of lead acid battery health using kalman residuals... 19 fig. 2 schematic diagram of smdaq 2.3. principle operation of smdaq for soh monitoring the smdaq is developed to optimize performance and monitor the health of seriesconnected pba battery packs. employing methods like node voltage subtraction, it guarantees accurate measurements across a wide range of battery voltage. while dualpolarity non-invasive current monitoring detects irregularities such as overcharging or excessive discharging, protecting battery longevity. temperature monitoring analyzes thermal behavior during charging and discharging to monitor abnormality. a calibration process is conducted with respect to theoretical adc values with practical measurements and also addressing nonlinearities, minimizing errors, and ensuring consistent system performance. therefore smdaq delivers accurate voltage, current, and temperature monitoring for reliable battery management of e3w. 20 s. haldar, a. mondal, r. banerjee 2.3.1. voltage measurement in smdaq, the node voltage subtraction method is employed to calculate individual voltages in a four-series connected pba battery pack. the high-potential battery node voltage is measured first, followed by the next lower node. the individual battery voltage is then obtained by subtracting the lower node voltage from the higher. using equations 1, 3, 5, and 7, total node voltages are determined to ensure safe operation at 80% dod. individual voltages are derived through sequential subtraction using equations 2, 4, and 6, enabling precise monitoring of each battery’s performance. 4 4 1 1 1 where 45.84 v 66 vi i i i btn b b = = =    (1) where 45.84v: minimum voltage at maximum discharge level of the battery pack. 66v: maximum voltage at 10% above the absorption stage charging level of the battery pack. 4 1 1 2 i i b btn b = = − (2) 4 2 2 i i btn b = =  (3) 4 2 2 3 i i b btn b = = − (4) 4 3 3 i i btn b = =  (5) 3 3 4b btn b= − (6) 4 4b btn= (7) the smdaq system is calibrated to monitor pba battery voltages during the absorption and bulk charging phases (14.3–15v), with an extended detection range up to 10% higher to prevent overcharging. voltage sensing is configured to measure up to 66v for the full pack, assuming a maximum of 16.5v per battery. calibration is achieved using four resistive divider networks (14:1, 10.6:1, 7.07:1, and 3.55:1) for voltage scaling at btn1–btn4. each divider is followed by a 50 hz low-pass filter to suppress highfrequency noise and a 1n4732 zener diode for signal stabilization, ensuring accurate adc input to the atmega328p. figure 3 illustrates the calibration curve showing the relationship between battery node voltage, adc input, and adc count using the calibrated voltage sensing unit. the calibration was conducted over a voltage range of 10v to 66v by comparing theoretical and practical adc count values. at 10v, the theoretical adc input is 0.72v, corresponding to an adc count of 143, while the measured count is 146. at 66v, the theoretical input is 4.68v with a count of 945, compared to a measured count of 965. in the low voltage range (10–20v), practical readings closely match theoretical values with a performance analysis of lead acid battery health using kalman residuals... 21 1.5% error. a slight deviation of 1.8% is noted in the mid-range (20–50v), and a maximum 2% error appears at higher voltages (50–66v) due to noise interference. this calibration reduces discrepancies and ensures sensor accuracy up to 98%, supporting reliable voltage monitoring. fig. 3 graph illustrating the relationship between the node voltage and adc count along with the adc input using calibrated voltage sensing unit 2.3.2. current measurement in addition to voltage measurement, smdaq is equipped to monitor total charging and discharging current of a series-connected pba battery pack, with an operational range up to 60a and a maximum of 100a. the current sensing module employs a wcs1600 halleffect sensor (sensitivity: 22 mv/a at 5v), buffered by an mcp6002 op-amp and filtered using a second-order sallen-key low-pass filter. initially designed with a 4.8 khz cutoff, the filter is optimized to 112 hz for effective noise suppression and accurate transient current detection within a 10 ms response time. the filter design (q = 0.742, ζ = 0.674) ensures sharp roll-off, with a phase margin of 145° and a gain crossover frequency of 45.8 hz, supporting stable and precise current sensing as defined by equation 8.to produce analog voltage output (vout) of input current (iin). 0.0217out in offsetv i v=  + (8) the current dependent term 0.0217 is the sensitivity of the current sensor expressed in v/a. voffset represents the sensor base line output voltage when there is no input current (iin = 0). typically, this is half of the input supply voltage (2.5 v for a 5 v supply). to accurately measure the current within the operating range, the decimal equivalent adc count of the current sensor output voltage is recorded for calibration purposes. the measured current is then obtained using the equation 9 22 s. haldar, a. mondal, r. banerjee 1 1 1 1(2 2 ) uts n n measured out offseti d k v i − − − = − +   −  (9) where imeasured is current measured by the data logger, dout is digital data output in decimal, k1 is scaling factor, n is the resolution of adc of atmega328p, δv is the volt equivalent/decimal count, sut is the sensitivity of the current sensor under test conditions, and ioffset is offset current. for this design the value of k1 and ioffset are considered as 0.008 and 1.10 amp respectively. fig. 4 graph illustrating the variation of input current with adc decimal count along with the adc input using calibrated current sensing unit figure 4 illustrates the variation of input current with adc count using the calibrated current sensing unit. operating within an adc range of 512 to 767 for 0–60 a, the sensor shows consistent stepwise increases in adc count with rising current, confirming accurate analog-to-digital conversion. the stable and proportional voltage increments at each current step validate sensor sensitivity and calibration, enabling detection of transient conditions. the sensing unit maintains low measurement error even at higher currents, effectively capturing current bursts during rapid acceleration or load shifts. this makes the calibrated sensor a reliable tool for monitoring soh, dod, and early battery degradation in e3ws. 2.3.3. temperature measurement one key objective of the temperature sensing unit is to monitor thermal behavior and heat generation in pba batteries, particularly during full charging when exothermic reactions dominate. the construction and implementation of customized temperature sensing probes in smdaq are illustrated in figure 5. a customized four-channel probes are developed to measure electrolyte temperatures between 25°c and 60°c. each probe performance analysis of lead acid battery health using kalman residuals... 23 consists of an lm35 sensor connected via cat-5 cable, insulated with heat-shrink tubing and epoxy, and enclosed in a 316-grade stainless steel tube with thermal silicone paste for accurate heat transfer. signals are conditioned using an lm358-based non-inverting amplifier (av = 5.5) and routed through a cd4051b analog multiplexer to a single adc input for sequential sampling. fig. 5 photograph depicting the components of the developed prototype (a) temperature sensing probe using lm35 with blue tube encapsulation (b) temperature probe integrated with battery cap, cat 5 cable and housed in 316 grade steel for protection (c) temperature signal conditioning unit utilizing lm358 (d) comprehensive view of the temperature probe, battery cap, signal conditioning unit, and smdaq daq system. this setup minimizes voltage drop and noise while enabling organized logging of individual battery temperatures during charging and discharging, as defined by equation 10. 2 1 10 2 out ref measured n d a t k   =  (10) where tmeasured is temperature of battery in ºc, dout is adc count in decimal, aref is the reference voltage of adc, n is resolution of adc and k1 is scaling factor depends upon gain of the amplifier. figure 6 shows the relationship between temperature, adc decimal count, and adc input voltage using the calibrated temperature sensing unit. calibration was conducted over a temperature range of 25°c to 60°c, corresponding to an output voltage span of 1.41 v to 3.3 v from the signal conditioning circuit. the lm35 sensor generates 10.2 mv/°c, which after amplification provides 56 mv/°c. based on equation 11 and using a 5 v analog reference for the adc, the measured counts align well with theoretical predictions showing 282–288 counts at 25°c and 676 counts at 60°c. this confirms the sensor's linear response across the full range. the use of a signal conditioning circuit improves sensitivity and maintains a stable linear relationship between temperature and adc output. 24 s. haldar, a. mondal, r. banerjee 288 336 393 460 532 571 650 676 1.41 1.65 1.92 2.24 2.6 2.79 3.17 3.3 20 25 30 35 40 45 50 55 60 65 250 300 350 400 450 500 550 600 650 700 750 adc count adc input temperature (°c) a d c c ou nt ( d ec im al ) 1.5 2.0 2.5 3.0 3.5 a d c in p ut ( v ol t) fig. 6 graph showing the trend of temperature variation with adc decimal count along with the adc input voltage using a calibrated temperature sensing unit. ∆adc count = 56mv/℃ 4.88mv/count ≈11.5 counts/℃ (11) the systematic approach of calibration techniques applied to the smdaq daq ensures a linear, accurate and robust real-time measurement of the battery parameters of the e3w vehicle. as discussed, the calibration of the voltage sensor unit achieves 98% accuracy for the voltage measurement while the current sensing unit provides precise high-current measurements with 98.6% accuracy and the temperature sensing unit offers 98% accuracy across the desired range. 2.4. voltage-current based soh estimation using rmse and kalman residuals the state of health (soh) of onboard pba batteries in e3ws is evaluated by examining both static and dynamic behaviors during operation. figure 7 presents the soh estimation flowchart, highlighting key processes including data acquisition, current sensing, dod computation, rmse and kalman residual estimation, and discrepancy evaluation. rmse captures static discrepancies by measuring the average deviation between observed and reference voltages across different dod levels. in contrast, kalman residuals represent dynamic discrepancies by quantifying the difference between measured voltage and the voltage estimated by a kalman filter during real-time drive cycles. combining these two metrics allows for a comprehensive soh assessment, covering both steady-state and transient load conditions typical of e3w usage. a weighted evaluation approach highlights cases where both static and dynamic degradation indicators align, ensuring a more robust and accurate estimation of battery health. performance analysis of lead acid battery health using kalman residuals... 25 fig. 7 soh estimation flowchart using rmse and kalman residual analysis 2.4.1. drive cycle-based dod computation for soh evaluation battery performance under real-world driving is evaluated through discharge current, the key performance parameter shaped by drive cycle demands. feature parameters like dod in ampere-hours (ah), representing cumulative energy use, are extracted from these discharge profiles for accurate soh estimation. real-time monitoring with smdaq enables precise dod tracking and early fault detection across the e3w drive cycle, with net discharge current measured at discrete intervals using equation 12. ∫ id(t)dt= tn t1 δt 2 [id (t1)+2id (t2)+3id (t3)+…id (tn) (12) id (t) = instantaneous discharge current over the time interval, t0 + δt, tn = total driving lap sample time.the integration of current over time provides a continuous understanding of battery utilization during different phases of the drive cycle, such as acceleration, deceleration, and idle periods. t1 and tn are the time taken for driving lap dl1 and dln respectively. the driving lap time is measured using equation 13 and 14. 26 s. haldar, a. mondal, r. banerjee 1 1 ( ) for ( ) 8 n n i i i i i n t n t t n n = = + = + −   (13) 1 1 ( ) where 0 for ( ) 8 n n i i i i i n t n t t n n = = + = → −   (14) where n= number of non zero magnitude of current and n= total number of lap sample count. the ampere-hour discharge is then calculated using the coulomb counting method, as represented by equation 15. ( ) 100% ( )oc ods t d t= − (15) where soc(t) = state of charge, dod (t) =depth of discharge at time t. the discharging current id is measured using the current sensing unit of smdaq in discrete time intervals. the quantitative measure of the change in depth of discharge (δdod) over a specific time (δt) for a given discharge current profile is calculated using equation 16 δdod= ∫ id(t)dt t0+δt t0 q rated ×100% (16) where qrated = rated capacity of the battery and id (t) = instantaneous discharge current over the time interval t0 + δt. by evaluating δdod over time, the equation facilitates real-time tracking of how much energy is consumed during operation, making it essential for dynamic conditions such as rapid acceleration or varying load in e3w vehicles. as time elapsed and the e3w covers a higher distance therefore accumulated dod is represented by equation 17. 0( ) ( )od od odd t d t d= +  (17) the equation provides the evaluation of individual batteries in a pack by comparing their dod(t), assisting in identifying discrepancies that could indicate performance degradation or faults. 2.4.2. dynamic voltage tracking using kalman residual analysis pba battery performance in e3ws is highly influenced by dynamic factors such as acceleration, load shifts, and varying drive cycles, leading to fluctuations in load terminal voltage. traditional degradation models fall short under such conditions due to static assumptions and dependence on historical data. a data-driven kalman filter (kf) approach overcomes these limitations by incorporating real-time sensor data, filtering noise, and adaptively estimating soh by comparing real-time voltage and current data from smdaq with the predicted values. the kalman-estimated voltage (𝑥𝑘) enables accurate tracking of battery health and early fault detection under fluctuating discharge conditions, as represented in equation 18. 1a bk k k kx x u w−= + + (18) where a= state transition matrix, defining how battery voltage changes due to past values, external factors like current and temperature, b= control matrix, representing the influence performance analysis of lead acid battery health using kalman residuals... 27 of external inputs on voltage, uk = external input vector incorporating current (i) and temperature (t) variation at kth time instance and represented by [ik,tk]t, wk = process noise, accounting for system uncertainties. before incorporating new sensor data, the predicted voltage is given by equation 19 xk̂̅=ax̂k-1+b1ik+b2tk+wk (19) based on sensor data, electrolyte temperature in pba batteries varies only 3–5% during discharge, even under e3w drive cycles. since its impact on prediction accuracy is minimal, it is excluded from the model to reduce complexity and focus on dominant factors (ik) enhancing accuracy and performance. once new measurements are available, the estimated voltage is updated by equation 20 x̂k=xk̂̅+kg(rm-hxk ̅̅̅̂̅ ) (20) where kg = kalman gain, determining how much correction is applied, rm = measured voltage from smdaq which includes voltage fluctuation and noise due to drive cycle, h= observation matrix, mapping the predicted state to the measured output. the kalman residual (𝑒𝑘) is represented by equation 21 ek=(rm-hxk ̅̅̅̂̅ ) (21) the kalman filter residual quantifies the discrepancy between the measured and predicted voltages. by analyzing these residuals across four pba batteries, early degradation trends are detected. 2.4.3. static rmse analysis over dod intervals in addition to dynamic soh analysis, a static evaluation is performed using root mean square error (rmse) computed at every 5% depth of discharge (dod) interval up to 80%. at each interval dod, k and rmse quantifies the deviation between the measured terminal voltage vmeas,i dod,k and the standard reference voltage vref,i dod,k and expressed by equation 22 ( ) 2 , , , , 1 1 k n dod k dod k dod meas i ref i i rmse v v n = = − (22) where, vmeas,i dod,k = measured terminal voltage at the ith sample within the kth dod interval. vref,i dod,k = reference (standard) terminal voltage at the same dod. n = number of voltage samples in that dod interval. this analytical approach identifies voltage deviations at specific dod levels (e.g., 40%, 60%, 80%), enabling early detection of stress or degradation zones. the dual-method soh framework combining kalman filtering for dynamic deviations and rmse for static errors at 5% dod intervals enhances accuracy and robustness in monitoring e3w battery health under real-world conditions. 28 s. haldar, a. mondal, r. banerjee 3. software architecture and system operation in smdaq, the atmega328p is programmed in embedded c. additionally, to perform step-by-step debugging, examine variables, and identify issues during development executable linkable file (elf) and assembly code are extracted to optimize the program for memory and performance. the coding part is divided into three sections. the first section describes the program sizing for the measurement of battery parameters using atmega328p. the second part focuses on integrating cloud server with data transmission and backup mechanism and the last section illustrates the development of an application programming interface (api) for real time monitoring of battery parameter. 3.1. program sizing and timing computation the program sizing and t-state analysis of smdaq daq are presented in table 2. this analysis is performed to optimize code and improve memory performance. the program requires 23,068 bytes of program memory and 1,528 bytes of data memory, with 33 arithmetic and logical instructions, 148 branch instructions, and 542 data transfer instructions contributing to a total of 1,294 t-states. these result in an execution time of 80.8µs. the distribution of t-states shows that data transfer instructions dominate (701 tstates) due to the frequent transfer of data between sensors, memory, and communication modules followed by branch (551 t-states) and arithmetic/logical instructions (42 tstates). this highlights optimizing real-time data handling and branching logic to enhance performance and reduce resource usage of smdaq. table 2 program sizing and t-state analysis of smdaq daq program parameter unit program memory requirement 23068 byte data memory requirement 1528 byte total no of arithmetic and logical instruction 33 total no of branch instruction 148 total no of data transfer instruction 542 total t-state 1294 total execution time 80.8µs t-state(arithmetic and logical instruction) 42 t-state(branch instruction) 551 t-state(data transfer instruction) 701 3.2. data backup and retransmission (dbr) with cloud integration figure 8 illustrates the smdaq data backup and transmission mechanism. sensors operate at a 10 hz sampling rate, capturing voltage, current, temperature, and time. every 20 samples are aggregated and formatted as a json string to reduce transmission overhead, then sent via http post to a php web server and stored in an amazon rds cloud database through a restful api. an e3w vehicle authorization token ensures secure access, while a query manager enables real-time and historical data retrieval. in real-time mode (thread 1), data is sent directly to aws iot core. if the network fails, data is locally stored on a memory card with timestamps. once connectivity is restored, thread 2 transmits the stored data, ensuring no loss. this dual-threaded approach optimizes real performance analysis of lead acid battery health using kalman residuals... 29 time monitoring, guarantees data integrity, and enhances fault tolerance in e3w battery health assessment. fig. 8 data backup and transmission mechanism of smdaq 3.3. application programming interface design and data visualization a customized battery parameter monitoring user interface (ui) is developed using the kotlin programming language, utilizing its interoperability with java for seamless integration. it employs http url connections to interact with an aws rds server, allowing real-time api-based data retrieval. the ui manages user inputs, processes battery-related data, and dynamically displays server responses. the backend is built using php and mysql, ensuring secure user authentication and efficient session management for the e3w vehicle. figure 9 illustrates the smdaq api decision-making process using color-coded voltage indicators for battery health assessment. red indicates deep discharge (dod > 85%) when voltage drops below 11.40v. yellow marks moderate discharge (around 50% dod) with voltages between 11.40v and 11.95v. green represents a healthy charge state (50%–100% soc) with voltages above 11.95v, aligning with standard pba battery guidelines. by displaying real-time voltage levels alongside current and 30 s. haldar, a. mondal, r. banerjee temperature data, smdaq enables timely intervention, enhances operational reliability, and extends battery life for effective monitoring of e3w onboard pba batteries. fig. 9 flowchart illustrating the decision making process for voltage level classification with colour coded outputs 4. results and discussion an experimental setup is arranged using the developed smdaq daq module connected to four series-connected tubular pba batteries (each 12v, 100ah, c20 rating). these 4.8kwh series connected batteries provide the electrical energy required to drive the 900-watt, 3000 rpm, 48-volt bldc electric motor and deliver power to sustain acceleration, and cruising of e3ws. figure. 10. illustrates the prototype of smdaq daq integrated into an e3w for monitoring battery parameter. to measure the battery health and the post-impact on batteries under varying charging and discharging conditions, different drive cycle of l3 type e3w over extended driving periods is considered. drive cycles for such vehicles are considered in typical rural and semi-urban driving scenarios and characterized by speed variability idle to peak speeds (typically 25–30 km/h), acceleration and deceleration, idle time, constant speed sections, and battery load (energy consumption during various phases of the drive cycle). performance analysis of lead acid battery health using kalman residuals... 31 fig. 10 prototype of smdaq data logger integrated into electric three wheeler (e3w) 4.1. verification of voltage and current accuracy using smdaq real-time experiments validate smdaq voltage data by comparing it with standard test meter readings from full charge to 80% dod during e3w operation. voltage and discharge current of each battery in the 1p4s pack are measured at 60-second intervals and matched against smdaq interface data to ensure accuracy. figures 11 and figure 12 validate smdaq's accuracy by comparing its voltage and current readings with a test meter over different drive cycle intervals. in figure 11, smdaq effectively tracks voltage fluctuations between 12.69v and 11.66v across the 0–2220 sec drive cycle interval, capturing drops at 540 sec, 1500 sec and 2220 sec and peaks at 1740 sec. figure 12 presents current readings over 0–1980 sec, where smdaq records sharp spikes above 50a at 720 sec and 1800 sec, as well as low-current conditions, closely matching the test meter. the alignment confirms smdaq's reliability in real-time pba battery current monitoring. 32 s. haldar, a. mondal, r. banerjee 0 370 740 1110 1480 1850 2220 11.6 11.8 12.0 12.2 12.4 12.6 12.8 12.69 12.08 11.77 12.01 11.76 11.78 11.69 12.31 11.79 11.66 12.71 12.14 11.79 12.08 11.78 11.8 11.72 12.36 11.82 11.71 b at te ry v ol ta ge ( v ol t) sample interval (sec) smdaq test meter fig. 11 voltage vs. time reading of batteries as recorded by smdaq and the test meter 330 660 990 1320 1650 1980 0 10 20 30 40 50 c u rr en t (a m p ) sample interval (sec) smdaq test meter fig. 12 current vs. time reading of batteries as recorded by smdaq and the test meter 4.2. soh assessment using kalman filter residual analysis an experiment is conducted to evaluate battery performance under various drive cycles during an extended discharging period at 80% depth of discharge (dod). the test covered driving laps from 1 km to 75 km, considering real-world conditions where battery performance is influenced by driver habits, vehicle load variations, and voltage drops due to increased current demand. figure 13 presents the soh estimation using kalman filter residual voltage analysis over time for four pba batteries. residuals for battery 1 and battery 3 are the highest, reaching 0.56 v and 0.61 v by 15:32, indicating severe degradation. the residuals for battery 4 are lower than battery 1 and battery 3 but still performance analysis of lead acid battery health using kalman residuals... 33 increase gradually. by 15:32, its residual reaches 0.35v, meaning it is moderately degrading. battery 2 remains the most stable at 0.30v. increasing residual trends confirm voltage drops, demonstrating the kalman filter's effectiveness in tracking soh degradation in real-time, making it a reliable method for e3w battery health monitoring. 13:22 13:41 14:00 14:18 14:37 14:56 15:14 15:33 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 k al m an r es id u al ( v ) time (hh:mm) bat 1 bat 2 bat 3 bat 4 fig. 13 evaluation of soh using discharge cycle characteristics (kalman filter residual voltage vs time) for four batteries in a e3w drive cycle 4.3. voltage response analysis under varying discharge rates figure 14 illustrates the influence of vehicle dynamics on battery performance and discharging behavior of batteries under varying discharging rates. the voltage profile of a 1p4s battery configuration (comprising four 12v, 100ah batteries: b1, b2, b3, and b4) is continuously monitored over an extended drive cycle to analyze voltage variations, imbalances, and transient behaviors under varying load conditions. the critical voltage threshold of 11.46v, at 80% dod level marked on the graphs, highlights the risk of overdischarge. figure 14.a illustrates the impact of rapid acceleration in congested traffic on e3w operation. frequent stops and acceleration caused transient current spikes at a 0.5c discharge rate, straining battery 1 and battery 3, leading to faster energy depletion and significant voltage sag below 10.5v for both. figure 14.b and figure 14.c illustrate smooth traffic conditions with minimal speed variations and stops, where batteries discharge at lower c-rates (0.15c–0.2c). battery 2 and battery 4 remained balanced with battery 2 maintaining a higher voltage and slower energy depletion. conversely battery 1 and battery 3 exhibited a sharp voltage drop below the critical threshold. in moderate traffic, e3w dynamics involve more frequent starts and stops with higher acceleration bursts than in smooth traffic, increasing current demand. this occasionally creates transient short circuits, drawing over 0.3c at various points in the drive cycle, depicted in figure 14.d. battery 1 and battery 3 are most affected, with terminal voltages dropping below 10.8v and 11.0v respectively, increasing the risk of damage due to higher internal resistance. conversely, battery 2 and battery 4 maintain voltages around 11.2v under similar dod 34 s. haldar, a. mondal, r. banerjee conditions. at higher c-rates, the performance gap between the strongest and weakest batteries is widened and more noticeable. the consistently poor performance of battery 1 and battery 3 suggests it should be inspected or replaced to improve overall pack performance. fig. 14 voltage and discharge characteristics of batteries under different traffic conditions: (a) transient current at 0.5c discharge rate (b) 0.15c-rate discharge (c) 0.2crate discharge and (d) 0.3c-rate discharge. 4.4 rmse-based deviation analysis at varying dod table 3 illustrates the rmse values change across different dod levels for the four tested batteries. at low dod levels (5%–20%), all batteries perform well with very low rmse, showing stable voltage behavior. between 25% and 55%, battery 1 and battery 3 start to show a gradual increase in rmse, reaching up to 0.45 v. this suggests early signs of performance decline, while battery 2 and battery 4 remain stable with low errors. a sharp increase is seen from 50% to 60% dod, where battery 1 jumps from 0.31 v to 0.73 v, and battery 3 from 0.42 v to 0.56 v. this sudden rise marks the beginning of clear voltage prediction errors. at higher dod levels (65%–80%), the rmse for battery 1 reaches a peak of 1.21 v, and battery 3 rises to 0.84 v. in contrast, battery 2 and battery 4 continue to show smaller changes, staying below 0.41 v. these results suggest that battery 1 and battery 3 degrade faster and are more affected by deep discharges. the higher rmse values are likely caused by increased internal resistance, voltage sag, and aging effects, which impact voltage accuracy under load. performance analysis of lead acid battery health using kalman residuals... 35 table 3 rmse analysis of tested batteries at different dod level dod (%) battery 1 battery 2 battery 3 battery 4 observation 5 0.03 0.07 0.18 0.03 all batteries stable; low deviation 10 0.02 0.02 0.20 0.04 15 0.03 0.08 0.42 0.28 20 0.13 0.12 0.28 0.11 25 0.16 0.14 0.32 0.08 battery 1 & 3 show early rise; b2 & b4 stable. 30 0.15 0.12 0.24 0.09 35 0.13 0.09 0.27 0.14 40 0.11 0.12 0.26 0.12 45 0.17 0.18 0.3 0.12 50 0.31 0.06 0.42 0.11 55 0.41 0.04 0.45 0.07 60 0.73 0.20 0.59 0.26 b1 & b3 degrade sharply; b2 & b4 hold steady. 65 1.21 0.41 0.84 0.41 70 1.13 0.38 0.64 0.40 75 1.05 0.37 0.69 0.39 80 0.97 0.32 0.62 0.38 4.5 integrated rmse-kalman residual analysis for battery soh estimation table 4 illustrates the combined rmse–kalman residual analysis and final soh interpretation of batteries, applying threshold limits of rmse (upper: 0.50, lower: 0.35) and kalman residual (upper: 0.25, lower: 0.15). battery 1 exceeds both thresholds significantly, with rmse at 0.83 and residual at 0.293, indicating advanced degradation due to poor voltage consistency and dynamic instability. battery 3 also shows degradation, with moderate rmse (0.60) and high residual (0.284), suggesting declining performance under both static and dynamic conditions. battery 4, while within the rmse limit (0.29), shows a moderate residual (0.199), pointing to slight aging likely driven by early dynamic response delay. in contrast, battery 2 remains well within both thresholds, rmse at 0.26 and residual at 0.145 confirming a healthy soh. this dual-metric evaluation enhances diagnostic accuracy by capturing both steady-state deviation and transient behavior. table 4 combined rmse–kalman residual analysis and soh interpretation of batteries battery avg. rmse (50–80% dod) kalman residual combined interpretation condition battery soh bat1 0.83 0.293 high rmse + high residual rmse > 0.50 and residual > 0.25 degraded bat 2 0.26 0.145 low rmse + low residual rmse < 0.35 and residual < 0.15 healthy bat 3 0.60 0.284 moderate rmse + high residual rmse > 0.50 and residual > 0.25 degraded bat 4 0.29 0.199 low rmse + moderate residual rmse < 0.35 and residual > 0.15 slightly aged 36 s. haldar, a. mondal, r. banerjee 4.6 temperature monitoring 80 160 240 320 400 35 36 37 38 battery 1 battery 2 battery 3 battery 4 t e m p e ra tu re ( °c ) time (minutes) 80 160 240 320 400 37 38 39 40 41 42 battery 1 battery 2 battery 3 battery 4 t e m p e ra tu re ( °c ) time (minutes) (a) (b) fig. 15 plot showing temperature characteristics (temp vs time ) of batteries: (a) during discharging condition; (b) during charging condition figure 15.a presents temperature profiles during a 400-minute discharge, showing that battery 2 and battery 4 operated at lower temperatures than battery 1 and battery 3. as shown in figure 15.b, during charging, the electrolyte temperatures of battery 1 and battery 3 increased by 8–10% due to exceeding the absorption voltage threshold (14.8v), while battery 2 and battery 4 showed only a 4% rise, remaining within optimal charging limits. 4.7 smdaq battery health monitoring interface figure 16 (a) represents smdaq system display mounted on the e3w dashboard showing real-time battery monitoring data. the screenshot of the smdaq mobile user interface (ui) is shown in figure 16(b). the snapshot shows colour-coded information for quick status assessment where battery 1 and battery 3 voltage drops below 11.4vand the pack voltage falls below 45.84 v,the interface turns red, indicating a critical condition. a fig. 16 (a) smdaq system display mounted on the e3w dashboard (b) mobile user interface of the smdaq battery health monitoring system displaying real-time battery parameters. performance analysis of lead acid battery health using kalman residuals... 37 yellow warning is displayed when the battery voltage ranges between 11.4v and 11.95v, signaling moderate discharge. when all batteries exceed 11.95v, the interface turns green, indicating that the batteries are within a safe operational range. this color-coded approach provides an efficient method for users to monitor and maintain battery health effectively. additionally, smdaq functions as a data-driven performance forecasting tool for battery health monitoring and provides decisive findings for e3w owners and battery manufacturers to diagnose battery issues early and prevent unexpected failures of pba batteries. 4.8 comparison of smdaq hardware with existing prototypes for battery health estimation table 5 illustrates the comparative analysis with other state-of-the-art works and prediction methods, highlighting key advancements in this research. table 5 comparative analysis with other state-of-the-art works and prediction methods parameters ref [31] ref[32] ref[33] ref[34] ref[35] this work hardware design devboardbased multi-dev board-based mcu+mux+ sensors+balancing circuit multi-dev board-based multi-dev boardbased custom pcb + integrated mcu+mux +filters+sensors + signal cond. battery under test li-ion,48v, 28ah pba smf, 12v,26ah 18,650li-ion, 3.7v,1.4ah pba ,12v above 65ah 18,500liion,3.7v, 2ah 1p4s pba,48v, 4×100ah 4.8kwh mcu two esp 8266 board atmega328, arm 7, esp 8266 atmega 328, esp 8266 atmega12 8a wizfi210 arm cortexm4f atmega328 esp 8266 voltage sensor simple voltage divider generic divider module simple voltage divider bq34z110 ic generic divider module 4 channel voltage divider current sensor, lantian rc acs712 opto-coupler and irlz44n bq34z110 ic acs712 wcs 1600 22mv/a temp sensor dht 11 dht 22 10kω thermistor chip cap-d sensor dht 11 multiplexed lm 35 probes load bldc,550 w,48v rheostat,50ω, 5a 2ω,discharged through irlz44n not given bulb e3w bldc, 900w,48v max volt, current, temp 46v,16a, 27°c 25v,30a, 80°c 34v,33a, 33°c 65v, not given 3.7v,1a, 66v(±2%) 60a(±1.5%) 42°c(±2°c) custom data visulization limited limited moderate full limited amazonrds&re stfulapi hosting thing speak cloud servers raspberry pi as a local server html and css, a web server udp server socketbased cool term based local server a php web server with amazon rds soh prediction methods no estimated soc + mse lstm + rnn architecture state of charge lstm + rul prediction dod analysis+ kalman residual +rmse soh assessment capability no static static static limited dynamic profiling static and dynamic drive cycle & transient analysis not supported not supported no real time profiling partially supported partially supported fully supported 38 s. haldar, a. mondal, r. banerjee unlike previous lab-based studies, this work uses an e3w bldc motor under realworld drive cycles, capturing actual discharge profile instead of relying on controlled conditions. a custom pcb integrates the mcu, mux, filters, sensors, and signal conditioning, improving accuracy over conventional designs. the system supports 66v (±2%), 60a (±1.4%), and 42°c (±2°c), making it suitable for high-power applications. real-time data access and cloud backup are enabled via a restful api and amazon rds, with support for both online and offline modes for improved reliability. a combined kalman residual and rmse approach with dod tracking allows early detection of degradation, enabling predictive maintenance and accurate soh estimation. this practical, scalable solution enhances battery monitoring for e3w applications. 5. conclusion a customized, affordable smdaq system has been designed and implemented. using direct measurement techniques smdaq diagnoses the state of health of pba batteries, which serve as the primary power source for e3w vehicles. through a structured design methodology, the smdaq monitors, calibrates, and evaluates key design attributes including battery voltage, current, and temperature of four series-connected lead-acid (pba) batteries under charging and discharging conditions in real-time. the prototype delivers an impressive accuracy of 98.6%. extensive field testing across various e3w drive cycles validates that smdaq provides comprehensive battery performance analysis, specifically monitoring c-rate discharge behavior across diverse traffic conditions. it captures voltage variations, transient current spikes, and imbalances between batteries, enabling early detection of performance discrepancies. the dual approach, kalman filter residual with rmse analysis enhances predictive monitoring by identifying potential battery health issues. custom temperature sensing probes track thermal variations during overcharging, preventing overheating risks. the user-friendly interface provides real-time battery health updates, allowing proactive maintenance to extend battery life. smdaq minimizes the impact of a single defective battery on the entire pack by enabling timely detection and replacement. additionally, its ability to assess the influence of vehicle dynamics and traffic patterns on battery performance makes it a valuable tool for predictive maintenance. this robust system supports both e3w owners and battery manufacturers in diagnosing issues, optimizing performance, and improving overall reliability and efficiency. references [1] g. wu, a. inderbitzin, and c. bening, "total cost of ownership of electric vehicles compared to conventional vehicles: a probabilistic analysis and projection across market segments", energy policy, vol. 80, pp. 196-214, 2015. [2] a. pandey and c. venkataraman, "estimating emissions from the indian transport sector with on-road fleet composition and traffic volume", atmos. environ., vol. 98, pp. 123-133, 2014. [3] r. hema and m. j. venkatarangan, "adoption of ev: landscape of ev and opportunities for india," measurement: sensors, vol. 24, p. 100596, 2022. [4] s. n. saxena, "revolution in growth of three-wheeler electric vehicles in india providing job opportunities to semi-skilled and unskilled people" j. global tourism res., vol. 4, no. 2, pp. 117-126, 2019. [5] p. t. moseley and d. a. j. rand. "the valve-regulated battery—a paradigm shift in lead-acid technology." in valve-regulated lead-acid batteries, pp. 1-14, elsevier, 2004. performance analysis of lead acid battery health using kalman residuals... 39 [6] g. adu-gyamfi, h. song, b. obuobi, e. nketiah, h. wang and d. cudjoe, "who will adopt? investigating the adoption intention for battery swap technology for electric vehicles", renew. sustain. energy rev., vol. 156, p. 111979, 2022. [7] c. r. lashway and p. idowu, "a test system for advanced lead acid battery state-of-charge and stateof-health research", int. j. smart grid clean energy, pp. 41-55, 2016. [8] r. bindu and s. thale, "power management strategy for an electric vehicle driven by hybrid energy storage system", iete j. res., vol. 68, no. 4, pp. 2801-2811, 2022. [9] c. c. hua and m. y. lin, "a study of charging control of lead-acid battery for electric vehicles", ieee int. symp. ind. electron., vol. 1, pp. 135-140, 2000. [10] r. li, w. li, a. singh, d. ren, z. hou and m. ouyang, "effect of external pressure and internal stress on battery performance and lifespan", energy storage mater., vol. 52, pp. 395-429, 2022. [11] k. zhang, l. jiang, z. deng, y. xie, j. couture, x. lin and x. hu, "an early soft internal short-circuit fault diagnosis method for lithium-ion battery packs in electric vehicles", ieee/asme trans. mechatronics, vol. 28, no. 2, pp. 644-655, 2023. [12] m. a. fatullah, a. rahardjo and f. husnayain, "analysis of discharge rate and ambient temperature effects on lead acid battery capacity", in proceedings of the 2019 ieee international conference on innovative research and development (icird), 2019, pp. 1-5. [13] j. m. bhatt, "experimental study about effect of temperature on performance parameters of valve regulated lead acid (vrla) battery" in proceedings of the 2019 ieee international conference on sustainable energy technologies and systems (icsets), 2019, pp. 285-291. [14] m. u. hassan, s. saha, m. e. haque, s. islam, a. mahmud and n. mendis, "a comprehensive review of battery state of charge estimation techniques", sustain. energy technol. assess., vol. 54, p. 102801, 2022. [15] s. haldar, s. mondal, a. mondal and r. banerjee, "battery management system using state of charge estimation: an iot based approach", in proceedings of the 2020 national conference on emerging trends on sustainable technology and engineering applications (ncetstea), 2020, pp. 1-5. [16] m. s. h. lipu, a. a. mamun, s. ansari, m. s. miah, k. hasan, s. t. meraj and n. m. tan, "battery management, key technologies, methods, issues, and future trends of electric vehicles: a pathway toward achieving sustainable development goals," batteries, vol. 8, no. 9, p. 119, 2022. [17] s. jiang and z. song, "a review on the state of health estimation methods of lead-acid batteries", j. power sources, vol. 517, p. 230710, 2022. [18] r. xiong, l. li and j. tian, "towards a smarter battery management system: a critical review on battery state of health monitoring methods", j. power sources, vol. 405, pp. 18-29, 2018. [19] s. jafari and y. c. byun, "optimizing battery rul prediction of lithium-ion batteries based on harris hawk optimization approach using random forest and lightgbm", ieee access, vol. 11, pp. 87034-87046, 2023. [20] j. c. sekhar, b. domathoti and e. d. santibanez gonzalez, "prediction of battery remaining useful life using machine learning algorithms", sustainability, vol. 15, no. 21, p. 15283, 2023. [21] l. ma, j. tian, t. zhang, q. guo and c. hu, "accurate and efficient remaining useful life prediction of batteries enabled by physics-informed machine learning", j. energy chem., vol. 91, pp. 512-521, 2024. [22] y. shen and y. ge, "prediction of state of charge for lead-acid battery based on lstm-attention and lightgbm", j. comput. inf. sci. eng., vol. 24, no. 9, p. 090903, 2024. [23] s. haldar, s. mondal, a. mondal and r. banerjee, "state of health and life cycle prediction of in-vehicle lead acid battery", in proceedings of the 2022 international interdisciplinary conference on mathematics, engineering and science (mesiicon), 2022, pp. 1-6. [24] m. f. ge, y. liu, x. jiang and j. liu, "a review on state of health estimations and remaining useful life prognostics of lithium-ion batteries", measurement, vol. 174, p. 109057, 2021. [25] p. venugopal, s. s. shankar, c. p. jebakumar, r. agarwal, h. h. alhelou, s. s. reka and m. e. h. golshan, "analysis of optimal machine learning approach for battery life estimation of li-ion cell", ieee access, vol. 9, pp. 159616-159626, 2021. [26] d. zhou, z. li, j. zhu, h. zhang and l. hou, "state of health monitoring and remaining useful life prediction of lithium-ion batteries based on temporal convolutional network", ieee access, vol. 8, pp. 53307-53320, 2020. [27] m. grunt, s. pecolt, a. błażejewski, t. królikowski and k. kawa, "innovative controller and remote battery capacity measurement system", procedia comput. sci., vol. 246, pp. 4336-4346, 2024. [28] y. zeng, d. chalise, s. d. lubner, s. kaur and r. s. prasher, "a review of thermal physics and management inside lithium-ion batteries for high energy density and fast charging", energy storage mater., vol. 41, pp. 264-288, 2021. [29] s. barcellona, s. colnago, g. dotelli, s. latorrata and l. piegari, "aging effect on the variation of li-ion battery resistance as function of temperature and state of charge", j. energy storage, vol. 50, p. 104658, 2022. 40 s. haldar, a. mondal, r. banerjee [30] i̇. aydın and ö. üstün, "a basic battery management system design with iot feature for lifepo₄ batteries", in proceedings of the 10th international conference on electrical and electronics engineering (eleco), 2017, pp. 1309-1313. [31] v. gupta, n. sharma, d. maram and h. priyadarshi, "iot enabled data acquisition system for electric vehicle", in proceedings of the aip conference, vol. 2294, no. 1, p. 040002, 2020. [32] m. s. gayathri, a. n. ravishankar, s. kumaravel and s. ashok, "battery condition prognostic system using iot in smart microgrids", in proceedings of the 3rd international conference on internet of things: smart innovation and usages (iot-siu), 2018, pp. 1-6. [33] j. k. thomas, h. r. crasta, k. kausthubha, c. gowda and a. rao, "battery monitoring system using machine learning", j. energy storage, vol. 40, p. 102741, 2021. [34] a. rauniyar, m. irfan, o. d. saputra, j. w. kim, a. r. lee, j. m. jang and s. y. shin, "design and development of a real-time monitoring system for multiple lead–acid batteries based on internet of things", future internet, vol. 9, no. 3, p. 28, 2017. [35] g. krishna, r. singh, a. gehlot and s. v. akram, "an iot-based predictive model for improved battery management system using advanced lstm model", j. energy storage, vol. 101, p. 113694, 2024. [36] s. haldar, s. gol, a. mondal and r. banerjee, "iot-enabled advanced monitoring system for tubular batteries: enhancing efficiency and reliability", e-prime–adv. electr. eng., electron. energy, vol. 9, p. 100709, 2024. [37] m. svendsen, m. winther-jensen, a. b. pedersen, p. b. andersen and t. m. sørensen, "electric vehicle data acquisition system", in proceedings of the ieee international electric vehicle conference (ievc), 2014, pp. 1-7. [38] s. echavarría, r. mejía-gutiérrez and a. montoya, "development of an iot platform for monitoring electric vehicle behaviour", in proceedings of the workshop on engineering applications, cham: springer international publishing, 2020, pp. 363-374. [39] g. pozzato, a. allam, l. pulvirenti, g. a. negoita, w. a. paxton and s. onori, "analysis and key findings from real-world electric vehicle field data", joule, vol. 7, no. 9, pp. 2035-2053, 2023. 10607 facta universitatis series: electronics and energetics vol. 35, no 4, december 2022, pp. 557-570 https://doi.org/10.2298/fuee2204557s © 2022 by university of niš, serbia | creative commons license: cc by-nc-n original scientific paper event-triggered sliding mode control for constrained networked control systems* andrej sarjaš, dušan gleich university of maribor, faculty of electrical engineering and computer science, maribor, slovenia abstract. the paper describes a non-linear control (etnc) approach for constrained networked feedback control systems (nfcs). the real-time controller execution is implemented based on the event-triggering paradigm. a nonlinear variable structure is used for the controller design. the nonlinear approach is based on the predefined sliding variable defined by the system states with a nonlinear switching function. the system's stability is analyzed regarding the evolution of the sliding variable. the event-triggered operation of the nonlinear controller is based on the prescribed triggering rule. the stability boundary of the sliding variable is subject to the preselected triggering condition, whose selection is a tradeoff of system performance, networks constraints and transmission capabilities. the main focus of the event triggering approach is lowering network resources utilization in the steady-state behavior of the nfcs. the presented approach ensures a non-zero inter-event time of controller execution, which enables scheduling and optimization of the network operation regarding the network constraints and real-time system performance. the efficiency of the presented method is presented with a comparison of the classical time triggering approach. the real measurement supports the results. key words: event-triggering, networked control system, variable structure control, sliding mode control 1. introduction networked feedback control systems have been researched extensively over the last two decades [1]. new communication technologies integrated into tiny devices with decent computational capability offer vast, remote applications in distributed or decentralized structures. regarding the network structure and amount of connected devices, the implementation of the nfcs is critical. new methods are derived that improve network usage and ensure system performance according to the controller implementation and execution. the paper introduces the nonlinear control law with event triggering execution. received march 23, 2022; revised april 29, 2022; accepted june 15, 2022 corresponding author: andrej sarjaš university of maribor, faculty of electrical engineering and computer science, koroška cesta 46, si-2000 maribor, slovenia e-mail: andrej.sarjas@um.si * an earlier version of this paper was presented at the 15thinternational conference on advanced technologies, systems and services in telecommunications (telsiks 2021), october 20-22, 2021, in niš, serbia [1] 558 a. sarjaš, d. gleich sliding mode control (smc) is an effective approach to ensure the prescribed performance of a closed-loop system, despite external disturbances and system uncertainty [1]-[4]. depending on the controller structure, the sliding mode controller is straightforward to implement and requires much computational time. all controllers in the real-time system are implemented in a discrete form, which results in a hybrid system where the continuous and discrete systems are interconnected [3]-[6]. the most commonly used approach for controller implementation is a sample and hold technique, or time triggering approach (tt). time triggering means that the controller output is updated at equidistant time intervals, also known as a sampling time. such tt closed-loop system is more suitable to design, due to the vast amount of ` developed techniques and approaches for time sampled systems. on the other hand, the tt system requires constant resources` utilization and data transmissions over the network system. the event-triggering (et) approach of a closed-loop system offers an alternative to the tt [7]. regarding the tt in the et system, the closed-loop system is updated based on the trigger rule evaluation. in other words, the controller is updated when the system states violate the triggering rule, which means that the controller is no longer updated periodically with fixed time intervals. such an implementation of the controller is more efficient than the tt implementation, and requires fewer computational resources, especially when the sliding manifold is reached. regarding the latter, et is beneficial for the networked control system (ncs), where the trigger mechanism reduces network transmission and is suitable for systems with data-rate constraints [8]-[10]. the network constraints with variable round trip time (rtt), limited data transmission, and package drops are insufficient for the ncs[11], [12]. the mentioned network parameters reduce system performances considerably, and can lead to unstable operation. the presented work introduced an smc controller design with an associated triggering rule, which ensures ncs stability and takes all the network parameters into account during the design procedure. the derived event-triggered sliding mode controller (et-smc) introduces triggering boundaries regarding the admissible lower inter-event time value and network delay [13], [14]. the et-smc for ncs is divided into two steps. the first step introduces an smc controller design with preselected system dynamics and parametrized sliding variables [15]-[17]. the second step involves triggering boundary selection regarding the system tracking performance and ncs uncertainty robustness. in comparison to the similar linear et paradigms, the presented approach still ensure smc properties and lowers the computational burden and network usage effectively. the controller parameter selection can be presented as an optimization procedure. the optimal parameter selection can be evaluated as a tradeoff between network utilization regarding ncs uncertainties and closed-loop performance, such as tracking capability, transient performance, network delay, etc. the assessment of the admissible lower interevent time of the et shows the direct influence of the et-controller on the network utilization during the reaching and sliding phase of the sliding variable evolution. the efficiency of the proposed controller is evaluated on a real-time system. event-triggered sliding mode control for constrained networked control system 559 2. sliding mode controller design for the sliding mode controller (smc) synthesis, the given system is used, 1 2 2 2 , x x x bx gv d = = − + + (1) where 2 1 2( ) [ ( ) ( )]tx t x t x t=  is a state vector and ( )v t  is the control variable. the parameters :g → and :b → are system parameters, where :d → is a disturbance. for smc design, the boundary of the system parameters are given, max0 b b  , min maxg g g  , min max max 0/[ , , ]g g b   . for system tracking capability, new system states are introduced, 1 1dx x = − , 2 2dx x = − , where dx is the desired value with its derivative dx . the transformed system is given as, 1 2 2 2 ,b gv d     = = − − + (2) where 1 2[ , ]t  = , d dd d x bx= − + + and holds ( )0supt dd t     . the sliding variable is designed as s c= for 2c , where 1 1[ 1], 0c c c=  . differentiating of s c= with respect to time gives, 2 1 1 1 2( ) 0. s c c b gv d    = + = = − − +  (3) regarding (3), d   and the sliding property, which brings the sliding variable to the sliding manifold, , 0s s = the smc controller can select as, 1 1 2(( ) ( )),v g c b sign s −= − + (4) where  > d holds. after the smc controller design (4), the et mechanism will be introduced in the next section. the controller (4) contains a nonlinear term, the solution of the feedback system (2),(3) with controller (4) is understood in the filippov sense [18]. 3. event-triggered sliding mode control for ncs the event-triggered rule derivation is based on the analysis of the reaching phase stability of the sliding variable [2]. it is worthy of mentioning that the discrete implementation of smc can not reach a sliding manifold completely. as a result, the quasisliding mode is obtained [16], [19], where the sliding variable is limited with boundary , where  it is subject to the sampling time, sliding parameter, and disturbance d . furthermore, the presented work is limited to the et approach, where the band  will be determined regarding the trigger mechanism and preselected inter-event time. the et-smc after two consecutive updates is given as ( ) ( ) ( ) ( )( )( )1 1 2 ,et n nv t g c b t sign s t −= − + (5) where tn is the last update, t is the current time between two updates, and is t  [tn,tn+1). ,s +   560 a. sarjaš, d. gleich theorem 1: consider system (2) with the sliding manifold s = 0. the parameter  is given so that ( )1 1 2( ) ( ) ( ) ( ( )) ,et n nv t g c b t sign s t −= − + (6) for all t > 0, where 2 2 2( ) ( ) ( )ne t t t = − . the event triggering is established if the controller gain is selected as d  +  (7) where holds 0  . proof: before continuing to prove, the remaining et error variables are introduced, e1(t) = 1(t) − 1(tn), and e(t) = (t) − (tn). for the stability test, the lyapunov function is presented v(t) = s(t)2/2 for the time interval t  [tn,tn+1), where 0n  . differentiation v with respect to time t the derivative v is given as 1 2(( ) ).etv ss s c b gv d= = − − + (8) substituting the controller (5) in (8) gives 1 2 1 2 1 2 1 2 2 (( ) ( ) ( ) ( )) (( ) ( ) ( ) ( ) ( ( )) ( )) (( )( ( ) ( )) ( ( )) ( )) et n n n n n v s c b t gv t d t s c b t c b t sign s t d t s c b t t sign s t d t        = − − + = − − − − + = − − − + ( ) 2 1 2 2 (t) 1 2 ( ) ( ( ) ( )) ( ) ( ) , n d e d d d s c b t t s s s c b e t s s s s s s s           − − − +   − − +   − +   − − −   − where  > 0. concerning the condition (7) and assumption sign(s(tn)) = sign(s(t)), it is to be noted that the sliding variable is approaching the sliding manifold, where s = 0. the above is true if at the time of triggering t = tn holds e2(tn) = e2(t) = 0, then the sliding variable s is bounded with , where, 2 1 ( ) ( ) ( ) ( ) , ( ) n ns t s t c t c t c e c k e c k k c b     − = − =   = − (9) regarding 2e e and 2k e e= . the parameter k is defined as ( ) 2 2 1 2 1 c b k   − = + and  is an upper limit of the 0 1sup ( )t e t     . the boundary  is defined as  = { , }s c k   =  , where the triggering rule in (6) can be defined as, 1 2 1( ) ( )e t c b −  − , (10) which is the end of the proof. event-triggered sliding mode control for constrained networked control system 561 the stability of the remaining system in (2) with controller (5) needs to be assessed after the stability analysis of the sliding variable with triggering condition. regarding the reaching phase boundary (9), it can be derived 2 1 1s c = − , where 1 1 1s c = − holds. with the introduction of the lyapunov function 2 1 / 2v = , the stability can be assessed as, 1 1 1 1 1 1 1 1 1 ( ) 1 , v s c c s c       = = −   = − −    with respect to conditions (6),(9), the system is stable if it holds that 1 1 1 0c s −−  . thus, the closed-loop system is stable with respect to s, and the system trajectory 1 is bounded by 1 1 1 . ( ) k c c c b   − (11) 4. event-triggered sliding mode control for ncs the structure of the network control system is depicted in fig. 1. the controller algorithm is executed on the network computer, where the triggering rule is evaluated on the plant. we assume that the plant has a real-time system with computational ability and communication interfaces. the real-time system on the plant side is used for noncomplex computation such as triggering condition evaluation, signal conditioning, and communication capability. the user datagram protocol (udp) is used for the given et-smc implementation. the data have been transmitted over different network hops, where additional time delay and package loss may occur. the package loss in the network is modeled as a loss delay [12], [13], where the maximal allowed round trip time (rtt) of the network is used for package loss detection. the plant side uses a dedicated package-loss timer, and if the watchdog timer is expired, then the request for new data is demanded from the server. we assume that two consecutive losses can not be accrued for the package loss occurrence. network network smc plant server data flow fig. 1 networked controller structure with et-smc 562 a. sarjaš, d. gleich the controller feedback structure is presented in fig. 2, where the triggering condition determines the network usage. the controller (5) is implemented on the server, and the triggering mechanism is on the plant side. plantsmc u xexd triggering condition network network server fig. 2 et-smc feedback configuration the inter-event time of the et-smc is determined regarding the error analysis of the two consecutive sampled states, 1 1 1 2 2 2 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) n n t t td d d d e t e t t t tdt dt dt dt       −     = =    −    , (12) where ( ) 0nt = , according to the last update. substitute (12) in (2), (5) which gives 0 1 0 0 0 ( ) ( ) ( ) ( ) 0 0 1 et n d e t t d t v t b gdt         + −      −      , 1 0 1 0 0 0 ( ) ( ) ( ( )) 0 0 1 1 cdc n bba t d t sign s t c         = + −      −      ( ( ) ( )) ( ( )) ( ) ( ) ( ) . c n c n d c c n c d d a e t t b sign s t b d t a e t a t b b     = + − +  + + +  the solution of the differential equations is ( )( ) ( ) ( 1)c na t tc n c d d c a t b b e t e a   −+ +   − , (13) where the minimal inter-event time  = t − tn is determined as ( )min 1 1 ln 1 ( ) ( ) c c c n c d d k a a c b a t b b        +   − + +   (14) it can be seen that the inter-event time depends on triggering condition  and selected controller parameters c1 and . regarding the uncertainty of the network, the delay n is introduced with the update time tn. the update sequence 0{ }n n nt   =+ corresponds to the event-triggered sliding mode control for constrained networked control system 563 update time tn and means that the controller is not updated with the last states, wherein the inter-event time is extended by delay value n. hence the error (13) grows till the next update time tn+1. the triggering sequence is admissible, regarding if 1 0,n n nt t n+  +  and the triggering rules (6),(10) ensure system stability. the derivation of the delay boundary, where the triggering rule ensures the system stability, is similar to the derivation of the inter-event time in (13),(14). for a given derivation, we assumed that the controller (5) at the time t  [tn, tn + n) is not updated with the current state (tn), whereby the further updates are executed at t  [tn + n, tn+1 + n+1), and the analysis involves the controller structure with past value v(t) = g−1((c1 − b)2(tn−1)+ sign(s(tn−1))). the admissible interevent time is caused by the delay, which ensures that the system stability with triggering condition (10) is, ( ) ( ) ( )( ) n 1 1 1 ln 1 ( ) c c c n n c d d k a a c b a t t b b     −    = +  − + + +    (15) the system is stable, and the boundary (11) is preserved if n  n it holds. for proper parameter selection, it is necessary to assume the maximally allowed delay in the network. the delay boundary is given as 0supn n     . the network structure and the used protocol for communication are designed after derivation of the crucial parameters for event-triggering implementation. the focal point of the network system is a protocol that needs to ensure simple transmission and minimal package loss with low rtt. all transmitted data must be transparent to the server and the client, whereas the measured data should not be ambiguous. the designed protocol enables package lost detection and possible adaptation of the controller execution in a classical tt or et manner. the package loss algorithm is essential for controller output recovery. if the package loss is detected or the rtt timer reaches the threshold, the controller output must be updated. otherwise, the closed-loop system is running in an open-loop. the update can be done with a new data transmission request from the server or an internal model-based approach. the recurrent request sent is a straightforward task for the controller update, whereas the model-based approach is more complex and advanced. in the model-based approach, the system data are obtained from the model or system approximation algorithms such as fuzzy sets and neural networks. the model-based approach requires more computational resources on the server or the client-side. such an approach can ensure faster output recovery than sending a new transmission request. the model-based update regarding the computational resources can act as a redundant system in the case of irregularities on the network or system. the structure of the designed protocol for the client communication is presented in fig. 3. ids rtts rttc data1 data2 datan crc #... fig. 3 the communication protocol of the client message the ids presents the server address, which is the main system of the ncs. tags rtts and rttc are timing data of the network rtt, one on the server-side and the other on the client-side. both sides are measured with their own rtt, where the server`s rtts is the time from server send to server received, and the client rttc is similar to rtts with 564 a. sarjaš, d. gleich beginning on the client send and received. the package loss and network irregularities can be detected with comparisons of the rttc and rtts. tags data1,2,n are transmitted states of the system. the estimation and detection of the network irregularities through different measured parameters are not the main objective of the presented work and will not be discussed hereinafter. all additional parameters of the protocol, which are not directly involved in the ncs operation, are just starting points for the further research of a network`s quality and reliability assessment. the protocol is concluded with a cyclic redundancy check crc and the delimiter #. the response message from the server to the client is presented in fig. 4. idc rtts rttc cont1 cont2 crc # ... fig. 4 the communication protocol of the server message the idc presents the client address, where rtt, crc and # are the same parameters as in the client message presented in fig. 3. the tags cont1,2,.. are controllers update values. all the time values and data are presented in 4bytes float format. the id and crc are presented with 32-bit integer values. the length of the message is determined with a number of transceived system states (data), whereas id, rtts, rttc, crc, and # values are mandatory and are the control parameters of the used protocol. regarding the employed protocol with network rtt time measurement on the server and client-side, it is necessary to acknowledge the possible network uncertainty. the network uncertainty can be presented as network delay, where the network information takes time to spread from the sender to the receiver over different network hoops. the delay can cause an unwanted effect on the feedback system, such as an oscillation, slower response, deteriorated disturbance rejection capability, and even unstable operation. the delayed system needs special awareness in the controller design. in the proposed approach, the delayed system is presented as an additional elapsed time after requesting a new update from the client-side. the delay caused a more extended operation in the unstable region given in (11),(13),(14). the inter-event time (14) is extended, and the permitted state boundary is extended (13). such time delay lowers the performance of the closed-loop system and tracking capability. the system's stability is ensured with the proper selection of the controller gain given in (7). if the time delay is modeled as a parametric uncertainty with a prescribed bound,  then the controller gain selection can be lowered for the admissible delay boundary. d   +  +  (16) besides the network delay, package loss can occur in the network. unlike the network delay, package loss is generally described as information that never arrives at the destination. in the ncs approach, different types of package loss are known; newer arrived, out of order, and multiple package arrivals. in the tt-ncs approach, the state observer with a controller on the server-side is mainly used to recover the loosed packages [8]. in the et technique, the package loss stability criteria can be analyzed regarding the lyapunov stability function of the reaching phase in the et-smc operation, where the package loss is modeled such as the error, ep(t) = (t) − (t), for time t  [tk, tk+1), where 2  . the state (t) presents the last update after the package loss. the number of packages lost is equal to  − 1, which  = 2 means one lost package. the proof of the event-triggered sliding mode control for constrained networked control system 565 stability is similar to the proof presented in (8), where the lyapunov function is equal to 2( , ) ( , ) / 2v t s t = , and its derivative is 1 2 1 2 2 ( ) 1 (( ) ( ) ( ) ( )) ( ) ( ( ) ( )) ( ( )) ( ) ( ) ( ) ( ) p et e t p d p d p d v s c b t gv t d t s c b t t sign s t d t s c b e t s s s s s s             = − − +    = − − − +      − − +   − +   − − −  regarding the assumption  > n it holds p  . after a consecutive package lost, the system is stable if the controller gain ensure the given condition,  > p + d (17) the 1 trajectory is bounded by 1 1 1( ) p p k c c c b   − , (18) where is ( ) 2 2 1 2 1p p c b k   − = + . after solving the differential equation ( , ) d e t dt  given in (12), the minimal inter-event time is ( )min 1 1 ln 1 ( ) ( )p p p c c c c d d k a a c b a t b b        +   − + +   (19) it is evident that the package loss higher the boundary of the output trajectory 1. if the output boundary needs to be in the prescribed range (11), (18), the controller gain and interevent time (14), (19) need to be selected at lower values. the closed-loop performance needs to be reduced to ensure higher robustness of the network uncertainties. the package loss can be detected with tts,c measurement on both sides of the network. with the proper selection of the maxtts,c, and delay parameter , the desirable performance of the closed-loop system can be ensured; otherwise, the lowered closed-loop or unstable behavior can occur. 5. experimental results the dual servo system is used for the validation of the presented et-ncs approach. the servo system is presented in fig 5. the client is implemented on the arm® cortex®m7 based stm32f7xx mcu with an iwip stack for transparent udp communication with the presented ncs protocol presented in figs. 3 and 4. the iwip stack on stm32f7 enables 100base-tx communication speed. the arm embedded system is responsible for the measured current, velocity, and angle of the servo system and provides actuation to the motor drive, with pulse width modulation (pwm) at the frequency of 10khz and resolution 4mv/duty. all the measurements before the transmission are preprocessed with different signal processing algorithms to ensure the high fidelity and reliability of the measured data. the used brushed motors in fig. 5 have a maximal velocity of 3500rpm at 24v and max load current 4a. 566 a. sarjaš, d. gleich fig. 5 real-time system with network socket the network is composed of an arm embedded system, router and pc-server. the embedded system provides a request for the controller update, which is sent to the server. the request message structure is defined with the protocol presented in fig. 3. after the client's received message, the server calculates the new controller output and prepares the server message back to the client, fig. 4. the used network is presented in fig. 6. stm32f7 current -velocity -angle measurements processing udp router serverclient smc -python script l w ip udp adc, pulses, pwm e t -t ri g g er fig. 6 ncs-network configuration the sliding mode controller is implemented with python 3.7. the main components of the python script are running the udp server with additional timer interrupt threats for tt implementation and rtts measurements. the closed-loop performance for tt and et implementation is evaluated with the given performance indices, 2 1 1 1 , { , , , }, sn w tt et ks rms w w x s v v n = =  (20) 1 1 2 1 1 0 2 1 0 for { ( ) } , , 1 for { ( ) } sn v i i i u t c a flag n n u t c a     − − − =   − = =   −  (21) event-triggered sliding mode control for constrained networked control system 567 where ns and ni are the numbers of triggering events for controllers vtt and vet respectively. the controller vtt stands for the tt execution of the controller algorithm presented in (4) as v. the controllers vtt and vet are tested in the same condition, with equal references values and a sampling time of 10ms for tt execution and periodic triggering evaluation for vet execution n  10ms (15). the parameters of the system presented in (1), (2) are, b = 3.3, g = 0.897, d = 7.1.the selected controller parameters are, c1 = 5.2,  = 16.2,  = 19.7, p = 19.7, tts,c = 11ms. the network performance is presented in fig. 7. fig. 7 measured rtts and rttc values of the ncs network the periodic triggering evaluation is selected properly regarding the measured rtt values for server and client trigger = 10ms. in each trigger period, only measured data are examined concerning the triggering boundary . figs. 8 and 9 present the ncs performance of the controller v = vtt. fig. 8 tracking capability, rpm value, and vtt controller output of the ttncs 568 a. sarjaš, d. gleich fig. 9 sliding variable and controller update flag of the ttncs figs. 10 and 11 present the ncs performance of the controller vet fig. 10 tracking capability, rpm value, and vet controller output of the etncs fig. 11 sliding variable and controller update flag of the etncs event-triggered sliding mode control for constrained networked control system 569 the estimated indices values (20),(21) are presented in table 1. table 1 performance indices of tt-ncs and et-ncs figs. 8-11 show the implementation results of the tt-ncs and et-ncs strategies. the advantages of both approaches are shown clearly. the tt-ncs has better tracking performance regarding table 1 and the rmsx1 value. this result was expected, due to the constant controller update with a prescribed sampling time of 10ms. on the other hand, the tt approach uses constant network resources. for a given experiment, at least two messages are transmitted in each 10ms time frame. regarding rmsx1 of the et-approach, the tracking capability has a slightly deteriorated response. the lower performance is the result of the nonlinear switching function of v and the unstable boundary region of the output x1 variable derived in (11) and the triggering condition. the network usage in the et-strategy is reduced drastically, especially when the system reaches a sliding manifold. the average update time for et-ncs is 41ms, presented in column avg(ts/n) of table 1. the average update time is related closely to the preselected triggering boundary and the course of the reference value. the triggering boundary affects the tracking capability of the closed-loop system directly. the employment of the et-ncs system is a tradeoff between network resources usage and the accuracy of the system. in the given experiment, the network usage of the tracking system is reduced by almost 70%, and the output rmsv value is reduced drastically. the et approach can also be considered a chattering alleviation technique for sliding mode controllers with an explicated output signum function, which is studied extensively within different implementation techniques and adaptation algorithms [18]-[21]. 6. conclusion the paper presents the event-triggering nonlinear controller implementation for a networked control system. compared to the classic time triggering implementation, the approach is beneficial for the ncs system with data rate constraints, where the network constraints can be considered during the controller design. the experimental results confirm the theoretical assumptions of et-nsc and derivation. the network usage and embedded system utilization are reduced. the et technique can be a viable alternative for tt feedback systems, especially where the computational and network resources are limited or the optimization subject. the work is a good research starting point for multi-agent, distributed control, and task scheduling in embedded systems. the central supervised server system can share its computation capacity with other distributed systems and control multiple sub-plants remotely, where the relaxation of network requests can be lowered significantly and preestimated. acknowledgement: this research was funded by the slovenian research agency (arrs) grant number p2-0065. ncs rmsx1 rmsv rmss avg(ts/n) rtts rttc flag vtt 83.2 4.56 57.2 10ms 8.23ms 3.21ms 100% vet 85.7 1.82 58.4 41ms 8.43ms 2.78ms 28.7% 570 a. sarjaš, d. gleich references [1] a. sarjaš and d. gleich, "nonlinear event-triggered networked feedback control system under data-rate constrains", in proceedings of the 15th international conference on advanced technologies, systems and services in telecommunications (telsiks), 2021, pp. 376-379. [2] a. k. behera, b. bandyopadhyay and x. yu, "periodic event-triggered sliding mode", automatica, vol. 96, pp. 1916-1931, jan. 2018. [3] v. i. utkin, sliding modes in control and optimization. new york: springer-verlag, 1992. [4] c. edwards and s. k. spurgeon, sliding mode control: theory and applications taylor and francis, 1998. [5] i. furtat, y. orlov and a. fradkov, "finite-time sliding mode stabilization using dirty differentiation and disturbance compensation", int. j. robust nonlinear control, vol. 29, no. 3, pp. 793-809. [6] k. j. aström, "event based control" in a. astolfi and l. marconi (eds.), analysis and design of nonlinear control systems, pp. 127-147, berlin, heidelberg, springer, 2006. [7] k. j. åström and b. m. bernhardsson, "comparison of riemann and lebesgue sampling for first-order stochastic systems", in proceedings of the 41st ieee conference on decision and control (cdc), las vegas, nv, usa, 2002, pp. 2011-2016. [8] a. ferrara, g. p. incremona and v. stocchetti, "networked sliding mode control with chattering alleviation", in proceedings of the 53th ieee conference on decision control, los angeles, ca, usa, december 2014, pp. 5542-5547. [9] e. kofman and j. h. braslavsky, "level crossing sampling in feedback stabilization under data-rate constraints", in proceedings of the 45th ieee conference on decision control (cdc), san diego, ca, usa, dec. 2006, pp. 4423-4428. [10] j. ludwiger, m. steinberger, m. horn, g. kubin and a. ferrara, "discrete time sliding mode control strategies for buffered networked systems", in proceedings of the 57th ieee conference on decision control, miami beach, fl, usa, dec. 2018, pp. 6735-6740. [11] m. cucuzzella, g. p. incremona and a. ferrara, "event-triggered variable structure control", int. j. control, vol. 93, no. 2, pp. 252-260, jan. 2019. [12] j. ludwiger, m. steinberger and m. horn, "spatially distributed networked sliding mode control", ieee control syst. lett., vol. 3, no. 4, pp. 972-977, may 2019. [13] j. ludwiger, m. steinberger, m. horn, g. kubin and a. ferrara, "discrete time sliding mode control strategies for buffered networked systems", in proceedings of the 57th ieee conference on decision control, miami beach, fl, usa, dec. 2018, pp. 6735-6740. [14] a. k. behera and b. bandyopadhyay, "event-triggered sliding mode control for a class of nonlinear systems", int. j. control, vol. 89, no. 9, pp. 1916-1931, jan. 2016. [15] a. k. behera, b. bandyopadhyay and x. yu, "periodic event-triggered sliding mode", automatica, vol. 96, pp. 1916-1931, jan. 2018. [16] a. k. behera and b. bandyopadhyay, "robust sliding mode control: an event-triggering approach", ieee trans. circuits syst. ii: express briefs, vol. 64, no. 2, pp. 146-150, feb. 2017. [17] w. gao, y. wang and a. homaifa, "discrete-time variable structure control system", ieee trans. ind. electron., vol. 42, no. 2, pp. 117-122, april 1995. [18] s. koch and m. reichhartinger, "discrete-time equivalents of the super-twisting algorithm", automatica, vol. 107, pp. 190-199, 2019. [19] b. brogliato and a. polyakov, "digital implementation of sliding-mode control via the implicit method: a tutorial", int. j. robust nonlinear control, vol. 31, no. 9, pp. 3528-3586, 2021. [20] v. utkin, "discussion aspects of high-order sliding mode control", ieee trans. automat. contr., vol. 61, pp. 829-833, 2016. [21] u. p. ventura and l. fridman, "design of super-twisting control gains: a describing function based methodology", automatic, vol. 99, pp. 175-180, 1990. instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 223 234 doi: 10.2298/fuee1702223s e-plane waveguide bandstop filter with double-sided printed-circuit insert  snežana stefanovski pajović 1 , milka potrebić 1 , dejan tošić 1 , zoran stamenković 2 1 school of electrical engineering, university of belgrade, serbia 2 ihp, frankfurt (oder), germany abstract. in this paper a novel design of an e-plane bandstop waveguide filter with a double-sided printed-circuit insert is presented. split-ring resonators are used as the resonating elements to obtain the bandstop response. the amplitude response of the waveguide resonator with a single resonating element on the insert is analyzed for various dimensions and positions of the split-ring resonator. the coupling between two resonators on the insert, in terms of their mutual distance, is considered as a next step to the filter design. various positions of the resonators are considered, including the case with the resonators on the different sides of the insert, which is of interest for the proposed filter design. finally, a third-order bandstop filter with a double-sided printed-circuit insert, operating in the x-frequency band, is introduced. the filter response is analyzed for various distances between the resonators and for various positions of the resonator printed on the other side of the insert. proposed filter design is simple, providing for the accurate fabrication, miniaturization and possibility to relatively easy obtain multi-band response, using resonators with different resonant frequencies on the different sides of the insert. key words: e-plane waveguide filter, bandstop filter, split-ring resonator, double-sided printed-circuit insert 1. introduction waveguide filters are widely used components for communication systems operating with high-power signals. they are qualified as passive components with high quality factors and low losses [1]. for example, microwave waveguide filters are elements of various satellite and radar systems, either as bandpass or bandstop filters. e-plane waveguide filters, considered in this paper, are relatively simple to design, fabricate and measure. however, in spite of simple design, there are lots of possibilities to implement received june 25, 2016; received in revised form october 3, 2016 corresponding author: milka potrebić school of electrical engineering, bulevar kralja aleksandra 73, 11120 belgrade, serbia (e-mail: milka.p@mts.rs) 224 s. stefanovski pajović, m. potrebić, d. tošić, z. stamenković single e-plane insert using different resonating elements. various implementations, for different frequency bands, can be found in the available open literature, thus confirming the great interest for the waveguide filters among the researchers in the area of microwave filter design. there are various solutions for the bandpass filter design, using simple or complex resonating elements on the insert. bandpass filter with ladder-type pattern on substrate, for ka-band operation, can be found in [2]. an example of the bandpass filter with t-shaped resonator to operate in the x-band is introduced in [3]. furthermore, rectangular ring resonators (rrrs) are used for the ka-band bandpass filter design in [4], while the combination of c-shaped and central-folded stripline resonators (cfsrs) for the waveguide filter design is introduced in [5]. for the bandstop filters, solutions with splitring resonators (srrs), quarter-wave resonators (qwrs) and other types of simple resonators can be found. bandstop filters using srrs with single rejection band are proposed in [6]-[9], while multiple rejection bands are obtained in [10]-[11]. in [12], the authors have exemplified the use of the srr array for the waveguide filter design. folded srrs are used for the third-order ka-band bandstop filter in [13]. in [14], the possibility to obtain bandpass and bandstop filter response using srrs with microstrip structures, is explained and illustrated. second-order bandstop filter with qwrs, combined with srr as a coupling element, is introduced in [15]. dual-band e-plane bandstop filter with qwrs is proposed in [16]. both latter filters are designed to operate in the x-band. simple rectangular resonating slots are used for single-band and dual-band filter design in [17]. for the e-plane filters with multiple resonating elements on the insert it is important to properly couple them, as explained in [18]. the goal of our research is to design a novel e-plane filter using srrs. therefore, we propose a bandstop waveguide filter with a double-sided printed-circuit insert, using srrs with optimized parameters as the resonating elements, in order to obtain the bandstop response in the x-frequency band (f0 = 10 ghz). according to the available open literature, waveguide filter design with double-sided printed inserts is still not widespread. so far, several solutions for the waveguide structures with double-sided printed-circuit inserts have been introduced. in [19], the operation of the x-band rectangular waveguide with double-sided single ring resonator array is analyzed in the frequency range 2-10 ghz, in order to investigate the characteristics of metamaterials in the considered waveguides. furthermore, bandpass filters using various types of resonators (rrrs, c-shaped resonators and csfrs), printed on different sides of the insert, are proposed in [20], for the w-band, and in [21], for the ka-band. the bandstop waveguide filter realization, using double-sided printed-circuit insert with srrs, for the x-band operation, as considered here, represents a novel solution. the following steps are carried out to achieve the targeted filter design. the amplitude response of a waveguide resonator using single srr is analyzed in terms of the dimensions and the position of the srr. furthermore, the coupling between two srrs on the same insert is considered in terms of their mutual distance. various positions of the srrs are observed, taking into account the possibility to have srrs on different sides of the insert, as well. finally, a novel third-order bandstop filter with a double-sided printedcircuit insert is introduced. the filter response in analyzed in terms of mutual distance between the srrs and the position of the srrs printed on the different sides of the insert. wipl-d software [22] is used to make three-dimensional electromagnetic (3d em) models of the considered structures and to perform 3d em full-wave simulations. e-plane waveguide bandstop filter with double-sided printed-circuit insert 225 the advantage of the proposed design is simple and more accurate fabrication when the distance between the resonators on the insert is critical. also, the novel design provides possibility to have so-called “overlapped“ resonators, meaning that the srr on the other side of the insert does not necessarily have to be positioned between the other srrs, but it may partly overlap with them. such design contributes to the compactness of the structure, meeting demanding miniaturization requirements in this manner. another important aspect of the proposed design is possibility to relatively easy obtain multi-band filter response, having resonators with different resonant frequencies on the different sides of the insert. 2. waveguide resonator using e-plane insert with srr the amplitude response of the waveguide resonator using e-plane insert with a single srr (figure 1a) is analyzed in terms of the parameters of the srr and its position. waveguide resonator and filter, considered in this paper, are designed using standard rectangular waveguide wr-90 (width a = 22.86 mm, height b = 10.16 mm). they are excited by properly designed ports with probes (monopoles), placed at a distance of λg/4 from the short-circuited end of the port (λg – guided wavelength in the waveguide). the te10 mode of propagation is observed. the printed-circuit insert is modeled using copper clad ptfe/woven glass laminate tlx-8 (εr = 2.55, tanδ = 0.0019, h = 1.143 mm, t = 18 μm). dimensions of the e-plane insert are apl = 22.86 mm, bpl = 10.16 mm. according to figure 1a, the parameters used for the srr centrally positioned on the insert are given in table 1. the obtained amplitude response is shown in figure 1b (f0 = 10 ghz, b3db = 193 mhz). the amplitude response is analyzed in terms of dimensions of the srr and its position. the obtained results are presented in figure 2 and table 2. (a) (b) fig. 1 waveguide resonator using e-plane insert with a single srr: (a) 3d model, (b) amplitude response table 1 dimensions of the srr in figure 1a dimension [mm] d1 d2 c p l value 2.76 2.5 0.4 0.6 3.43 226 s. stefanovski pajović, m. potrebić, d. tošić, z. stamenković (a) (b) (c) (d) fig. 2 comparison of amplitude responses: (a) d1 varies, (b) c varies, (c) p varies, (d) l varies table 2 comparison of amplitude responses for single srr d2 = 2.5 mm, c = 0.4 mm, p = 0.6 mm, l = 3.43 mm d1 = 2.76 mm, d2 = 2.5 mm, p = 0.6 mm d1 [mm] f0 [ghz] b3db [mhz] c [mm] f0 [ghz] b3db [mhz] 2.6 10.276 190 0.2 10.748 174 2.8 9.945 194 0.4 10.009 193 3.0 9.641 192 0.6 9.408 209 d1 = 2.76 mm, d2 = 2.5 mm, c = 0.4 mm, l = 3.43 mm d1 = 2.76 mm, d2 = 2.5 mm, c = 0.4 mm, p = 0.6 mm p [mm] f0 [ghz] b3db [mhz] l [mm] f0 [ghz] b3db [mhz] 0.4 9.750 193 2.43 10.115 183 0.6 10.009 193 3.43 10.009 193 0.8 10.238 193 4.43 9.944 178 variation of resonator length (d1) primarily influences resonant frequency (longer printed resonator provides lower resonant frequency), while the 3-db bandwidth practically does not change. similarly, the increase of the gap width (p) moves the resonant frequency toward higher values, but the bandwidth remains the same. however, the change of the width of the printed trace (c) has the influence on both resonant frequency and bandwidth: by increasing c, f0 decreases while the band becomes wider, and vice versa. it should be noticed that the change of the trace width c causes small change of l, in order to have centrally positioned srr regardless of its dimensions. furthermore, by moving the resonator up and down from its central position on the insert, both resonant frequency and bandwidth change. these results are important for optimization of the parameters and positions of the srrs used for the filter design, in order to obtain desired amplitude response. e-plane waveguide bandstop filter with double-sided printed-circuit insert 227 3. coupling between two srrs differently positioned on e-plane insert coupling between two srrs on the same e-plane insert, depending on their mutual distance, is analyzed for several different cases. namely, possible solutions assume various orientations of the srrs in terms of gap position, and also various positions of the srrs, i.e. both srrs can be on the same or different side of the insert. in order to be able to calculate the value of the coupling coefficient, the amplitude characteristic s21 [db] is observed when the resonators are practically decoupled from the ports, meaning that the excitation is weakened, as proposed in [23]. this is achieved by adding metal plates (s = 8 mm), on both ends of the insert, toward the ports (figure 3a). therefore, two characteristic frequencies (f1 and f2), denoting local maxima of the s21 characteristic (figure 3b), are obtained and used for the coupling coefficient k calculation, according to the following formula [24]: 2 2 2 1 2 1 2 2 ff ff k    . (1) (a) (b) fig. 3 method of determining coupling coefficient: (a) 3d model with additional metal plates, (b) s21 characteristic with two local maxima the inserts with two srrs considered for the coupling analysis are shown in figure 4. the srrs depicted using dashed lines are printed on the other side of the insert. both srrs have the same dimensions, given in table 1. however, for cases 1 and 2, l1 = l2 = 3.43 mm, and for case 3 l1 = 3.43 mm and l2 = 3.30 mm. figure 5 shows coupling coefficient k as a function of the distance d between the srrs. for all considered cases, coupling gets weaker (i.e. k decreases) by increasing the distance d. for cases 1 and 2, coupling between resonators is stronger compared to case 3, so it is analyzed for wider range of values of the distance d. it can be noticed that the coupling is pretty much the same for cases 1a and 1b, meaning there is no significant difference whether the srrs are printed on the same or different sides of the insert. however, for d ≤ 2 mm, there is significant difference between values of the coupling coefficient obtained for case 2a and 2b. the same stands for case 3a and 3b, for d ≤ 1 mm. also, when both srrs are on the same side of the insert, the strongest coupling is obtained for case 2. on the other hand, when the srrs are printed on the different sides of the insert, cases 1 and 2 provide stronger coupling, compared to case 3, for the same distance d. 228 s. stefanovski pajović, m. potrebić, d. tošić, z. stamenković (a) (b) (c) fig. 4 srr inserts used for coupling analysis: (a) case 1, (b) case 2, (c) case 3 4. e-plane bandstop filter with double-sided printed-circuit insert using srrs based on the aforementioned results, a third-order bandstop filter is developed using double-sided printed-circuit insert with srrs. two srrs are printed on the same side of the insert, and the third one (central srr) is printed on the other side (depicted using dashed line in figure 6a). the parameters of the srrs are given in table 3. dimensions of the insert are apl = 22.86 mm, bpl = 10.16 mm. the amplitude response of the proposed filter, for the distance d = 11 mm, is shown in figure 6b (f0 = 10 ghz, b3db = 277 mhz). the total length of the proposed filter is 0.456 λg. the amplitude response of the filter is analyzed for various values of the distance d between two outer srrs. according to the amplitude responses shown in figure 6c, it is notable that the increase of the distance d results in a narrower bandwidth, while the center frequency remains practically the same. furthermore, the influence of the position of the central srr on the filter response is investigated, as well. considered srr can be centrally positioned on the insert, as previously proposed, but it can be also shifted up and down, so it does not have to be in line with the outer srrs (figure 7a). the obtained amplitude responses, for various values of the shift, are compared as shown in figure 7b. by moving central srr up or down for 1 mm, there is no significant change of the center frequency (less than 1 %). however, the 3-db bandwidth is notably changed, particularly when the srr is moved up (in the considered case, 3-db bandwidth is increased for 45 %). this property of the filter can be used for bandwidth tuning. e-plane waveguide bandstop filter with double-sided printed-circuit insert 229 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 55 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.20.2 d [mm] k case 1a case 1b (a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 d [mm] k case 2a case 2b (b) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.20.2 d [mm] k case 3a case 3b (c) fig. 5 coupling coefficient k as a function of distance: (a) case 1, (b) case 2, (c) case 3 230 s. stefanovski pajović, m. potrebić, d. tošić, z. stamenković (a) (b) (c) fig. 6 waveguide filter using e-plane insert with srrs: (a) 3d model and wipl-d model of the insert, (b) amplitude response, (c) comparison of amplitude responses for various values of distance d table 3 dimensions of the srrs in figure 6a dimension [mm] di1 di2 ci pi li r1 (i = 1) 2.76 2.5 0.4 0.6 3.43 r2 (i = 2) 2.77 2.5 0.4 0.6 3.43 (a) (b) fig. 7 waveguide filter using e-plane insert with shifted central srr: (a) models of the insert, (b) comparison of amplitude responses for various values of the shift e-plane waveguide bandstop filter with double-sided printed-circuit insert 231 figure 8 shows comparison of amplitude responses of the filter with double-sided printed-circuit insert (figure 6a), and the one when all three srrs are printed on the same side of the insert. for both cases, dimensions of the corresponding srrs are the same, as well as the distance between them (d = 11 mm). as can be seen, there is no significant change of the filter response; resonant frequency is the same, while the bandwidth is narrowed for 10 mhz, which is 3.6 % of the reference bandwidth. however, a novel solution with srrs printed on both sides of the insert allows more accurate fabrication when the distance between the printed traces is critical, so the srrs can be closer to each other or can even overlap. in this manner, the requirements regarding device miniaturization can be easily met. also, multi-band filters can be developed having srrs with different resonant frequencies on the different sides of the insert, occupying less space compared to the solution when the srrs are printed on the same insert, next to each other, but separated enough to avoid undesired coupling. fig. 8 comparison of amplitude responses of e-plane bandstop filters with srrs (model 1: double-sided printed-circuit insert, model 2: single-sided printed-circuit insert) another possible solution with double-sided printed-circuit insert is shown in figure 9a. the outer srrs are oriented in such manner so their gaps are positioned on the left/right side. similarly as in the previous examples, the central srr is printed on the other side of the insert. dimensions of the srrs are given in table 4. the distance between the outer srrs is set to d = 9 mm. the filter length is equal to 0.392 λg. the amplitude response of the filter is shown in figure 9b (f0 = 10 ghz, b3db = 1027 mhz). as can be seen, a wide-band filter is obtained, using the proposed simple approach. the proposed filters are compared to the similar solutions from the available open literature (e-plane filters of the third order, with a single rejection band), in terms of the filter size on the printed insert. the filter given in figure 9a exhibits a smaller size than the ka-band filter presented in [13], whose length is 0.406 λg, while each of the filters given in figures 6a and 9a is shorter than filter in [7] (total length 0.501 λg) and x-band filters in [8] (total length 0.572 λg) and [17] (total length 1.766 λg). therefore, it can be concluded that the compact structures are designed, with the possibility for further miniaturization. the filter order can be easily increased by adding resonators. 232 s. stefanovski pajović, m. potrebić, d. tošić, z. stamenković (a) (b) fig. 9 waveguide filter using e-plane insert with srrs of various orientations: (a) 3d model and wipl-d model of the insert, (b) amplitude response table 4 dimensions of the srrs in figure 9a dimension [mm] di1 di2 ci pi li r1 (i = 1) 2.8 2.5 0.4 0.6 3.28 r2 (i = 2) 2.76 2.5 0.4 0.6 3.43 5. conclusion novel design of an e-plane bandstop waveguide filter using a double-sided printedcircuit insert with srrs has been proposed. design has started with a model of the waveguide resonator using single srr. the amplitude response has been thoroughly investigated in order to be able to optimize the parameters of the srrs for the filter design. the coupling between two srrs on the insert has been analyzed for various positions of the srrs and their orientation. since the double-sided printed-circuit insert is of interest for the presented research, the model with srrs printed on different sides has been also taken into account. for each considered case, it has been shown that the coupling becomes weaker as the distance between the srrs increases. based on these findings, the third-order e-plane filter with the double-sided printed-circuit insert is introduced. the amplitude response has been investigated in terms of the distance between the srrs and position of the central srr. by moving the central srr up or down the bandwidth can be tuned. it has been shown that the amplitude response of the e-plane waveguide bandstop filter with double-sided printed-circuit insert 233 filter with the double-sided printed-circuit insert matches relatively good with the response of the filter with all srrs printed on the same side of the insert. however, the advantage of the novel solution has been recognized in the fact that printing resonators on different sides of the insert allows more accurate fabrication when the distance between the traces is critical, so the srrs can be closer to each other. proposed filter design provides the possibility to have various combinations of the resonators on the insert, resulting in different responses. in this manner, a wide-band filter using double-sided printed-circuit insert with srrs has been also introduced. besides the abovementioned advantage regarding fabrication precision, the proposed filter design allows overlapping resonators printed on the different sides of the insert, therefore providing for the device miniaturization. also, double-sided printing allows development of multi-band filters using single e-plane insert, having resonators with different resonant frequencies on the different sides of the insert. such layout of the srrs occupies less space on the insert, compared to the design assuming srrs on the same side, next to each other, separated enough to avoid undesired coupling of different bands. comparison with the similar solutions found in the available open literature has confirmed the proposed filter design in terms of the possibility for device miniaturization. it has been shown that the filters presented here occupy less space on the inserts than some previously reported filters of the same order, operating in different frequency bands, assuming that the filter length is normalized to the guided wavelength in the waveguide for the considered center frequency. the future work will be based on the different implementations of compact multi-band filters using e-plane double-sided printed-circuit inserts, which are recognized as relatively simple to design and fabricate, and can be used in real systems operating at microwave frequencies. acknowledgement: this work was supported by the ministry of education, science and technological development of the republic of serbia under grant tr32005. references [1] r. j. cameron, c. m. kudsia, r. r. mansour, microwave filters for communication systems: fundamentals, design, and applications. new jersey: john wiley & sons, 2007. [2] z. wang, r. xu, b. yan, “a covering ka-band two-way switch filter module using a three-line and an e-plane waveguide band-pass filters“, int. j. rf microw. c. e., vol. 25, no. 4, pp. 305-310, may 2015. [3] d. budimir, o. glubokov, m. potrebic, “waveguide filters using t-shaped resonators“, electron. lett., vol. 27, no. 1, pp. 38-40, january 2011. [4] j. y. jin, x. q. lin, q. xue, “a miniaturized evanescent mode waveguide filter using rrrs”, ieee t. microw. theory, vol. 64, no. 7, pp. 1989-1996, july 2016. [5] j. y. jin, x. q. lin, y. jiang, q. xue, “a novel compact e-plane waveguide filter with multiple transmission zeroes”, ieee t. microw. theory, vol. 63, no. 10, pp. 3374-3380, october 2015. [6] a. shelkovnikov, dj. budimir, “miniaturized rectangular waveguide filters“, int. j. rf microw. c. e., vol. 17, no. 4, pp. 398-403, july 2007. [7] a. shelkovnikov, dj. budimir, “left-handed rectangular waveguide bandstop filters“, microw. opt. techn. let., vol. 48, no. 5, pp. 846-848, may 2006. [8] m. mrvić, m. potrebić, d. tošić, z. cvetković, “e-plane microwave resonator for realization of waveguide filters”, in proceedings of the 12th international saum conference on systems, automatic control and measurements. niš, serbia, 2014, pp. 205–208. [9] b. jitha, c. s. nimisha, c. k. aanandan, p. mohanan, k. vasudevan, “srr loaded waveguide band rejection filter with adjustable bandwidth”, microw. opt. techn. let., vol. 48, no. 7, pp. 1427-1429, july 2006. 234 s. stefanovski pajović, m. potrebić, d. tošić, z. stamenković [10] m. n. m. kehn, o. quevedo-teruel, e. rajo-iglesias, “split-ring resonator loaded waveguides with multiple stopbands“, electron. lett., vol. 44, no. 12, pp. 714-716, june 2008. [11] e. rajo-iglesias, o. quevedo-teruel, m. n. m. kehn, “multiband srr loaded rectangular waveguide”, ieee t. antenn. propag., vol. 57, no. 5, pp. 1571-1575, may 2009. [12] n. purushothaman, a. jain, w. r. taube, r. gopal, s. k. ghosh, “modeling and fabrication studies of negative permeability metamaterial for use in waveguide applications”, microsyst. technol., vol. 21, no. 11, pp. 2415-2424, november 2015. [13] j. y. jin, q. xue, “a type of e-plane filter using folded split ring resonators (fsrrs)”, in proceedings of asia-pacific microwave conference 2015. nanjing, china, 2015. [14] s.n. burokur, m. latrach, s. toutain, “influence of split ring resonators on the properties of propagating structures”, iet microw. antenna p., vol. 1, no. 1, pp. 94-99, february 2007. [15] s. stefanovski, m. potrebić, d. tošić, “a novel design of e-plane bandstop waveguide filter using quarterwave resonators”, optoelectron. adv. mat., vol. 9, no. 1-2, pp. 87-93, january 2015. [16] m. mrvić, s. stefanovski, m. potrebić, d. tošić, "novel implementation of dual-band bandstop waveguide filter using quarter-wave resonators", (in serbian), tehnika, vol. 64, no. 3, pp. 473-480, 2015. [17] r. lopez-villarroya, g. goussetis, “novel topology for low-cost dual-band stopband filters”, in proceedings of asia-pacific microwave conference 2009. singapore, singapore, 2009. [18] s. lj. stefanovski, “microwave waveguide filters using printed-circuit discontinuities”, ph.d. dissertation, school of electrical engineering, university of belgrade, belgrade, serbia, 2015. [19] c.-t. chiang, j.-c. liu, y.-c. huang, c.-p. kuei, y.-s. lee, k.-d. yeh, a. h.-c. chen, “both transversal negative permeability and backward-wave propagation in x-band waveguide with double-side srr metamaterials”, int. j. rf microw. c. e., vol. 26, no. 3, pp. 240-246, march 2015. [20] j. y. jin, q. xue, “novel w-band passband filters using the e-plane planar resonators”, ieee international workshop on electromagnetics: applications and student innovation competition (iwem) 2016. nanjing, china, 2016. [21] j. y. jin, x. q. lin, q. xue, “a novel dual-band bandpass e-plane filter using compact resonators”, ieee microw. wirel. co., vol. 26, no. 7, pp. 484-486, july 2016. [22] wipl-d pro 11.0, http://www.wipl-d.com, wipl-d d.o.o., belgrade, serbia, 2013. [23] r. l. villarroya, “e-plane parallel coupled resonators for waveguide bandpass filter applications“, ph.d. dissertation, heriot-watt university, edinburgh, scotland, uk, 2012. [24] j.-s. hong, microstrip filters for rf/microwave applications. new jersey: john wiley & sons, 2011. 10877 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 91-101 https://doi.org/10.2298/fuee2301091d © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper efficiency and radiative recombination rate enhancement in gan/algan multi-quantum well-based electron blocking layer free uv-led for improved luminescence samadrita das1, trupti r. lenka1, fazal a. talukdar1, ravi t. velpula2, hieu p. t. nguyen2 1department of electronics and communication engineering, national institute of technology silchar, assam, 788010, india 2department of electrical and computer engineering, new jersey institute of technology newark, new jersey, 07102, usa abstract. in this paper, an electron blocking layer (ebl) free gan/algan light emitting diode (led) is designed using atlas tcad with graded composition in the quantum barriers of the active region. the device has a gan buffer layer incorporated in a c-plane for better carrier transportation and low efficiency droop. the proposed led has quantum barriers with aluminium composition graded from 20% to ~2% per triangular, whereas the conventional has square barriers. the resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher radiative recombination. the simulation outcomes exhibit the highest internal quantum efficiency (iqe) (48.4%) indicating a significant rise compared to the conventional led. the designed ebl free led with graded quantum barrier structure acquires substantially minimized efficiency droop of ~7.72% at 60 ma. our study shows that the proposed structure has improved radiative recombination by ~136.7%, reduced electron leakage, and enhanced optical power by ~8.084% at 60 ma injected current as compared to conventional gan/algan ebl led structure. key words: ultra-violet (uv), light emitting diode (led), gallium nitride (gan), internal quantum efficiency (iqe), multi-quantum well (mqw), quantum barrier (qb), electron blocking layer (ebl) 1. introduction ultra-violet light emitting diodes (leds) are of immense importance because of their potential applications and have attracted considerable attention in optical communication, pharmaceutical appliances, water and air purification, and many more. gallium nitride (gan), received june 28, 2022; revised july 14, 2022, and july 26, 2022; accepted july 26, 2022 corresponding author: samadrita das department of electronics and communication engineering, national institute of technology silchar, assam, india e-mail: samadrita_rs@ece.nits.ac.in mailto:samadrita_rs@ 92 s. das, t. r. lenka, f. a. talukdar, r. t. velpula, h. p. t. nguyen a promising material for generating uv luminescence over a wide range of spectrum, has attracted many researchers’ attention [1]–[4]. gan shows a wide band gap ranging from 0.7 ev, 3.4 ev to 6.2 ev which can further be amplified by introducing aluminum (al) to prepare algan alloy [5], [6]. moreover, gan being an environmental friendly material has better biocompatibility and low manufacturing price [7]–[11]. gan are used for creating highefficiency shorter wavelength luminescence and fabricate semiconductor based materials such as led, laser diode (ld) with low threshold [12], [13]. from the last few years, research is going on the optimization of gan-based led structure design [14]–[17]. this optimization is beneficial to improve the efficiency in the symmetry of carrier transport, better injected charge carriers, confinement of carriers in the quantum wells which further enhances the radiative recombination rate leading to the breakthrough in the internal quantum efficiency (iqe) [18]–[20]. due to the electron overflow, iqe and efficiency droop at high injection current face a critical issue [22]. although the electron blocking layer (ebl) introduced between the p-region and active region can suppress the electron overflow[23], but the hole injection efficiency is also strongly affected because of positive polarization sheet charges formed at the heterointerface of the last quantum barrier (qb) and ebl[24]. additionally due to high magnesium (mg) activation energy in high al content ebl, efficient p-doping is quite difficult [25]. thus to mitigate these problems, in our paper we have used an ebl free multiquantum well (mqw) uv-led operating at ~354.6 nm wavelength which eliminates the formation of positive polarization sheet charges and shows a significantly enhanced hole injection and reduced electron leakage. we have presented a distinctive design of qb in gan/algan mqw by graded composition inside the entire barrier across [0001] axis. as a result, the performance of the proposed structure is remarkably improved, compared to the conventional uv-led structure using an ebl and with square quantum barriers. the design of led structure and its numeral simulation framework is presented in section 2 followed by results and analysis in section 3. finally, the conclusion is drawn in section 4. 2. device structure and numerical simulation framework in this study, the above-mentioned led structures are numerically studied using the use of computer-aided simulation tool silvaco atlas tcad which is designed to analyze and optimize leds based on wurtzite semiconductor compounds[26]. a gan/algan led with a peak wavelength of ~354.6 nm is presented in fig. 1. the basic device structure considered as the conventional led (ledi) is constructed above a sapphire based substrate with a thickness of 80 µm followed by an undoped gan buffer layer of thickness 1.2µm, n-doped algan coating layer (doping concentration: 1 ×1020 cm-3, width: 1.8 µm, al content: 18%), four pairs of gan (3 nm)/algan (7 nm) mqw, p-doped algan layer as ebl[27] (doping concentration: 2 ×1018 cm-3, width: 20 nm, al content: 20%), p-doped algan coating layer (doping concentration: 1 ×1018 cm-3, width: 180 nm, al content: 15%) and finally p-doped gan contact layer (doping concentration: 2.5 ×1018 cm-3, width: 80 nm). the quantum square barriers have 20% uniform al composition. efficiency and radiative recombination rate enhancement in gan/algan multi-quantum... 93 fig. 1 (a) schematic diagrams of ledi conventional gan/algan mqw with square qbs, (b) ledii with triangular barriers for the betterment of performance, the square barriers of ledi have been optimized with graded composition. along the n-side in each qb, the al composition is integrated to 20% (al0.26ga0.74n) while in the p-side the al composition is defined by the variable x which is in the range (0 ≤ x ≤ 20 %). the al composition in each qb gradually reduces from 20% to x (alxga1-xn, 0 ≤ x ≤ 0.2) across [0001] axis from n to p-side. the calculations are accomplished using the carrier mobilities of 90 (electrons) and 15 (holes) cm2v-1s-1 and the operating temperature is set as 300 k. the device with graded triangular barrier (x=0.02 for reference) is considered as ledii. the final ebl free uv-led proposed structure with graded triangular barrier is considered as lediii which is the optimum goal of this paper. the al composition in each qb is increased to 25% in the nside while in the p-side the value of x is in the range (0 ≤ x ≤ 25 %). the energy band gaps of the gan and algan used in the simulations are taken as 3.42 ev and 6.28 ev respectively. the respective radiative recombination rate of coefficient (copt) are 2×10-10 and 1.1×10-10 cm3/s. the lattice constant of gan is 0.3189 nm. the auger coefficient and carrier lifetime have their default values as 1×10-34 cm6/s and 1×10-9 s respectively. 3. results and analysis 3.1. internal quantum efficiency the iqes of the device with varying values of x in alxga1-xn in the graded qbs with respect to injection current are displayed in fig. 2. as shown, efficiency of ledi has the lowest value compared to the other cases with graded qb (0 ≤ x ≤ 0.2). with decreasing band gap of alxga1-xn from n to p-side, the iqe at the same injection current remarkably raises. due to better prospective, the efficiencies at 60 ma with respect to function x are displayed in the inset of fig. 2. while reducing the values of x from 0.2 to ~0.02, the efficiency increases from 34.79% to 45.68% then vaguely minimizes while x approaches 0. this is because when al-composition is further decreased to 0.02, band gap of alxga1-xn decreases which in turn increases the effective barrier heights for holes and electrons further. ledii acquires 31.3% rise of efficiency at 60 ma compared to ledi. fig. 3 show that the optimized ebl free device (lediii) has the highest iqe of 48.4% at 60 ma. lediii has 39.12% and 5.95% higher iqe than ledi and ledii respectively. the 94 s. das, t. r. lenka, f. a. talukdar, r. t. velpula, h. p. t. nguyen efficiency droop is minimized from 13.87% (ledi) to 10.22% (ledii) and further to 7.72% (lediii) at the same current of 60 ma according to the equation given below: (1) this result establishes that the ebl free device with triangular barriers does contribute to the enhancement of iqe and decrease of efficiency droop. in order to validate our device model and parameters, the iqe is compared with the nearly available experimental result [28] as shown in fig. 2. fig. 2 internal quantum efficiency vs. injected current with varying values of x. inset: values of iqes as a function of x. fig. 3 internal quantum efficiency vs. injected current for all leds inset: the efficiency droop for each led at 60 ma current efficiency and radiative recombination rate enhancement in gan/algan multi-quantum... 95 3.2. energy band diagrams fig. 4 shows the calculated energy band diagrams for ledi, ledii and lediii at 60 ma injected current. the simulated results shown in fig. 4(a)-(b) depict the dissimilarities and the tendency of variation of the energy band diagrams where the band gap of every qb is altered from uniform to graded composition. band diagram of ledi depicts a triangular designed shape because of the presence of internal polarization field and forward bias [29]. the energy band gap (eg) of alxga1-xn can be calculated as – eg(alxga1-xn) = eg(aln)x + eg(gan)(1 – x) – (1.3x(1 – x)) (2) where → eg(aln) = band gap energy of aln = 6.2 ev, eg(gan) = band gap energy of gan = 3.42 ev [30] fig. 4 energy band diagram of active region of gan/algan mqw for (a) ledi, (b) ledii and (c) lediii this mathematical formula shows that the band gap of alxga1-xn decreases with a decrease in the al composition. hence the band gap of every qb reduces while moving from n to p-side, thus influencing the effective barrier heights for electrons as well as holes. the formation of the hole depletion region due to the positive polarization sheet charges 96 s. das, t. r. lenka, f. a. talukdar, r. t. velpula, h. p. t. nguyen interface at lqb/ebl lessens the hole injection efficiency in ledii [24]. this problem can be overcome by removing the ebl from ledii. фcn and фebl are the effective conduction band barrier height (cbbh) at corresponding barrier (n) and ebl respectively. displayed in fig. 4(b), the values of фcn for all qbs i.e. фc1-фc5 are 370.8 mev, 408.2 mev 442.2 mev, 367 mev and фebl is 468.9 mev for ledii which is much higher than фebl for ledi (257.1 mev). the фcn values in the proposed ebl-free lediii i.e. фc1-фc5 are 460.2 mev, 618.3 mev, 505.2 mev and 632.1 mev, respectively. the higher and progressively increased фcn in lediii constructively confine the electrons in the active region and effectively resist the electron overflow into p-region. this leads to the significantly reduced non-radiative recombination in p-region and enhances hole injection into the active region. 3.3. carrier concentration the electron as well as hole concentration distribution in the mqw of various leds is displayed in fig. 5 to further understand the reason behind the tremendous performance improvement in lediii. ledi indicates a hole concentration of 10.4×1018 cm-3 in the initial quantum well from n to p-side which is much lower than ledii (16.9×1018 cm-3). these results specify that graded qb led has superior hole transport lessening the hole concentration. the distribution of electrons, as observed in graded qb led, appears to have better uniformity, compared to ledi, which may proportionate to superior transportation of fig. 5 carrier concentration of (a) ledi, (b) ledii and (c) lediii efficiency and radiative recombination rate enhancement in gan/algan multi-quantum... 97 holes [31]. the electron leakage in lediii is notably mitigated and lower than ledii which blocks the undesired recombination of electrons with incoming holes in the p-region. subsequently, lediii has higher electron (22.6×1018 cm-3) and hole (23.2×1018 cm-3) concentration throughout the active region, compared to ledii. 3.4. radiative recombination the distribution of radiative recombination in the active region at an injection current of 60 ma is simulated and illustrated in fig. 6. the radiative recombination distribution in ledii is more uniform compared to ledi. in ledi, radiative recombination in the primary qw has a recombination rate of 2.38×1028 cm-3s-1. this is probably due to the deficient spatial distribution overlap between holes and electrons [32]. the electrostatic field in mqws of lediii is lower than ledii that supports the spatial overlap of electron-hole wave functions which improves the radiative recombination process [33]. thus, the recombination rate of lediii is increased by ~136.7% compared to ledii. as shown in fig. 5, most electrons still accumulate in the initial well, while the hole concentration in the last well is less than that in the previous wells. however, in conventional led, both holes and electrons are centred at the wells close to p-gan, hence the radiative recombination is extremely effective at that location. above outcomes suggest that in order to diminish the droop behaviour of led without deteriorating total recombination, more attention has to be given to the spatial distribution between the holes and electrons [34]. fig. 6 radiative recombination rate of all led samples 3.5. power fig. 7 illustrates the luminous power vs. current for ledi and ledii. the light output is observed to be amplified with decrease in the value of x because graded qb benefits from superior electron confinement and larger hole injection efficiency. these superior optical properties are also attributed to the decrease in the polarization field in the mqw [35]. this improved power means that more carriers will recombine in the qw of graded qb led thus effectively improving the light efficiency of gan/algan led [36]. furthermore, as shown in fig. 8, the output power of lediii is remarkably increased to 98 s. das, t. r. lenka, f. a. talukdar, r. t. velpula, h. p. t. nguyen 18.075 mw from 16.723 mw (ledi) at 60 ma current injection i.e. ~8.084% enhancement. the normalised power spectral density of the three devices is displayed in fig. 9. conventional ledi has stronger quantum-confined stark effect (qcse) induced by the spontaneous and piezoelectric fields in the mqw layers which shows an obvious screening effect and band-filling effect. this results in a blue-shift in ledi. from fig. 9, lediii shows a red shift of ~5 nm because of negligent presence of qcse. fig. 7 behaviour of luminous power versus forward current with varying values of x. inset: clearer view of power at 60 ma current fig. 8 luminous power as a function of injected current for all leds efficiency and radiative recombination rate enhancement in gan/algan multi-quantum... 99 fig. 9 room temperature el spectra of all the led devices vs. wavelength 4. conclusion to summarize, ebl free uv-led of gan/algan mqws with specially designed graded qbs are numerically simulated. after reducing the band gap of algan across [0001] axis from n towards p region in every qb, the efficiencies of the device enhance. the upgraded led having x=0.02 (ledii) acquires topmost iqe of ~45.68 % at 60 ma which is 31.3% more compared to the conventional one (ledi) with square barriers. the reason behind this improvement is attributed to the modified energy band diagrams in the graded qbs. moreover, we have numerically demonstrated ebl free uv-led graded qb structure and observed that it can effectively suppress electron overflow, support enhanced hole injection into the led active region as compared to the conventional led. the hole transport in mqws was notably intensified at current of 60 ma which is beneficial for droop reduction. the efficiency droop was decreased from 13.87% in conventional led to only 10.22% in graded qb led and further to 7.72% in the proposed ebl free led. the proposed led has an 8.084% increase in the luminous power at an injection current of 60 ma as compared to conventional led and 39.12% rise in the efficiency. we believe that the el performance of the leds based on gan materials can be further improved through elaborate device design and carefully considering the varying carrier transport characteristics of gan based leds, which show different conduction-to-valence band-offset ratios in their mqw structures. acknowledgement: this work is one of the outcomes of dst-serb, govt. of india sponsored matrics project no mtr/2021/000370 which is duly acknowledged for support. 100 s. das, t. r. lenka, f. a. talukdar, r. t. velpula, h. p. t. nguyen references [1] s. das, t. r. lenka, f. a. talukdar and r. t. velpula, "carrier transport and radiative recombination rate enhancement in gan/algan multiple quantum well uv-led using band engineering for light technology", in proceedings of the 2nd international conference on micro and nanoelectronics devices, circuits and systems, mndcs 2022, pp. 1–11. [2] m. usman, u. mushtaq, m. munsif, a. r. anwar and m. kamran, "enhancement of the optoelectronic performance of p-down multiquantum well n-gan light-emitting diodes", phys. scr., vol. 94, no. 10, p. 105808, 2019. [3] h. tao, s. xu, j. zhang, p. li, z. lin and y. hao, "numerical investigation on the enhanced performance of n-polar algan-based ultraviolet light-emitting diodes with superlattice p-type doping", ieee trans. electron devices, vol. 66, no. 1, pp. 478-484, 2019. [4] s. das et al., "effects of polarized-induced doping and graded composition in an advanced multiple quantum well ingan/gan uv-led for enhanced light technology", eng. res. express, vol. 4, no. 1, p. 015030, 2022. [5] y. nagasawa and a. hirano, "a review of algan-based deep-ultraviolet light-emitting diodes on sapphire", appl. sci., vol. 8, no. 8, p. 1264, 2018. [6] m. usman et al., "zigzag-shaped quantum well engineering of green light-emitting diode", superlattices microstruct., vol. 132, p. 106164, 2019. [7] g. kim, j. h. kim, e. h. park, d. kang and b.-g. park, "extraction of recombination coefficients and internal quantum efficiency of gan-based light emitting diodes considering effective volume of active region", opt. express, vol. 22, no. 2, p. 1235, 2014. [8] h. hu, s. zhou, x. liu, y. gao, c. gui and s. liu, "effects of gan/algan/sputtered aln nucleation layers on performance of gan-based ultraviolet light-emitting diodes", sci. rep., vol. 7, p. 44627, 2017. [9] s. zhou, x. liu, h. yan, z. chen, y. liu and s. liu, "highly efficient gan-based high-power flip-chip light-emitting diodes", opt. express, vol. 27, no. 12, pp. a669–a692, 2019. [10] x. zhao, b. tang, l. gong, j. bai, j. ping and s. zhou, "rational construction of staggered ingan quantum wells for efficient yellow light-emitting diodes", appl. phys. lett., vol. 118, no. 18, p. 182102, 2021. [11] s. zhou et al., "numerical and experimental investigation of gan-based flip-chip light-emitting diodes with highly reflective ag/tiw and ito/dbr ohmic contacts", opt. express, vol. 25, no. 22, p. 26615, 2017. [12] y. meng et al., "growth and characterization of amber light-emitting diodes with dual-wavelength ingan/gan multiple-quantum-well structures", mater. res. express, vol. 6, no. 8, p. 0850c8, 2019. [13] c. h. wang et al., "efficiency droop alleviation in ingan/gan light-emitting diodes by graded-thickness multiple quantum wells", appl. phys. lett., vol. 97, no. 18, p. 181101, 2010. [14] z. lin, x. chen, y. zhu, x. chen, l. huang and g. li, "influence of thickness of p-ingan layer on the device physics and material qualities of gan-based leds with p-gan/ingan heterojunction", ieee trans. electron devices, vol. 65, no. 12, pp. 5373–5380, 2018. [15] m. usman, a. r. anwar, m. munsif, s. malik and n. u. islam, "analytical analysis of internal quantum efficiency with polarization fields in gan-based light-emitting diodes", superlattices microstruct., vol. 135, p. 106271, 2019. [16] h. hu et al., "boosted ultraviolet electroluminescence of ingan/algan quantum structures grown on high-index contrast patterned sapphire with silica array", nano energy, vol. 69, p. 104427, 2020. [17] x. fan, s. xu, h. tao, r. peng, j. du, y. zhao, j. zhang, j. zhang and y. hao, "improved performance of gan-based ultraviolet leds with the stair-like si-doping n-gan structure", mdpi, vol. 11, no. 10, p. 1203, 2021. [18] m. h. kim et al., "origin of efficiency droop in gan-based light-emitting diodes", appl. phys. lett., vol. 91, no. 18, pp. 1-4, 2007. [19] j. h. park et al., "enhanced overall efficiency of gainn-based light-emitting diodes with reduced efficiency droop by al-composition-graded algan/gan superlattice electron blocking layer", appl. phys. lett., vol. 103, no. 6, 2013. [20] c. sheng xia, z. m. simon li, w. lu, z. hua zhang, y. sheng and l. wen cheng, "droop improvement in blue ingan/gan multiple quantum well light-emitting diodes with indium graded last barrier", appl. phys. lett., vol. 99, no. 23, p. 233501, 2011. [21] s. das, t. r. lenka, f. a. talukdar, r. t. velpula, h. p. t. nguyen and c. engineering, "carrier transport and radiative recombination rate enhancement in gan / algan multiple quantum well uvled using band engineering for light technology", in: lenka, t.r., misra, d., fu, l. (eds) micro and nanoelectronics devices, circuits and systems. lecture notes in electrical engineering, vol. 904. springer, singapore. pp. 187-198. efficiency and radiative recombination rate enhancement in gan/algan multi-quantum... 101 [22] j. cho, e. f. schubert and j. k. kim, "efficiency droop in light-emitting diodes: challenges and counter measures", laser photonics rev., vol. 7, no. 3, pp. 408-421, 2013. [23] h. hirayama et al., "222-282 nm algan and inalgan-based deep-uv leds fabricated on high-quality aln on sapphire", phys. status solidi appl. mater. sci., vol. 206, no. 6, pp. 1176–1182, 2009. [24] c. chu et al., "on the origin of enhanced hole injection for algan-based deep ultraviolet light-emitting diodes with aln insertion layer in p-electron blocking layer", opt. express, vol. 27, no. 12, p. a620, 2019. [25] m. l. nakarmi, n. nepal, j. y. lin and h. x. jiang, "photoluminescence studies of impurity transitions in mg-doped algan alloys", appl. phys. lett., vol. 94, no. 9, pp. 1–5, 2009. [26] s. clara, “silvaco user’s manual device simulation software,” no. october, 2004, [online]. available: www.silvaco.com. [27] b.-c. lin et al., "hole injection and electron overflow improvement in ingan/gan light-emitting diodes by a tapered algan electron blocking layer", opt. express, vol. 22, no. 1, p. 463, 2014. [28] j. li et al., "carrier transport improvement in zno/mgzno multiple-quantum-well ultraviolet lightemitting diodes by energy band modification on mgzno barriers", opt. commun., vol. 459, 2020. [29] k. mehta et al., "theory and design of electron blocking layers for iii-n-based laser diodes by numerical simulation", ieee j. quantum electron., vol. 54, no. 6, pp. 1–11, 2018. [30] h. hirayama, s. fujikawa and n. kamata, "recent progress in algan-based deep-uv leds", electron. commun. japan, vol. 98, no. 5, pp. 1–8, 2015. [31] r. charash et al., "carrier distribution in ingan/gan tricolor multiple quantum well light emitting diodes", appl. phys. lett., vol. 95, no. 15, pp. 2007-2010, 2009. [32] s. zhou, j. lv, y. wu, y. zhang, c. zheng and s. liu, "reverse leakage current characteristics of ingan/gan multiple quantum well ultraviolet/blue/green light-emitting diodes", jpn. j. appl. phys., vol. 57, no. 5, p. 051003, 2018. [33] y. a. yin, n. wang, g. fan and y. zhang, "investigation of algan-based deep-ultraviolet light-emitting diodes with composition-varying algan multilayer barriers", superlattices microstruct., vol. 76, pp. 149155, 2014. [34] j. chang et al., "algan-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping", ieee photonics j., vol. 8, no. 1, pp. 1–7, 2016. [35] t. y. wang et al., "algan-based deep ultraviolet light emitting diodes with magnesium delta-doped algan last barrier", appl. phys. lett., vol. 117, no. 25, p. 251101, 2020. [36] h. li, c. j. chang, s. y. kuo, h. c. wu, h. huang and t. c. lu, "improved performance of near uv gan-based light emitting diodes with asymmetric triangular multiple quantum wells", ieee j. quantum electron., vol. 55, no. 1, pp. 1-4, 2019. 13355 facta universitatis series: electronics and energetics vol. 38, no 4, december 2025, pp. 697 714 https://doi.org/10.2298/fuee2504697k © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper a structure based on trocr transformer and large language model for classification of handwritten texts hossein kardanmoghaddam, adel akbarimajd, mohammad ranjbarpour, mahdi nooshyar, shahram jamali department of electrical and computer engineering, university of mohaghegh ardabili, ardabili, iran orcid ids: hossein kardanmoghaddam https://orcid.org/0000-0002-9304-5093 adel akbarimajd https://orcid.org/0000-0002-7019-9655 mohammad ranjbarpour https://orcid.org/0009-0004-4522-2421 mahdi nooshyar https://orcid.org/0000-0002-6786-7763 shahram jamali https://orcid.org/0000-0003-2764-6373 abstract. processing handwritten texts and classification and their content analysis are among the most important problems in the realm of text analysis. microsoft has presented pre-trained trocr models for printed and hand-written texts. these models due to prior pre-training are better starting point for image processing. for using trocr with the aim of detecting printed and handwritten texts, we can use fine-tuning technique on pre-trained model using different datasets. this process helps the model to learn better the specific features of image processing and hand-written or semihandwritten texts. trocr uses transformer models for ocr and its fine-tuning on special datasets especially, hand-written datasets is a common task. trocr model from microsoft extracts text from these images, and in this research a structure based on trocr and llm has been proposed whose aim is extraction of hand-written texts from existing images in a dataset (english handwritten line dataset) and converting them to text data and then this data has been given to llm as an input so that the extracted texts can be classified (using bart model) based on different subjects and contents. key words: large language model, fine-tuning, trocr, neural network, deep learning 1. introduction natural language processing is one of the significant subfields in artificial intelligence and also in linguistic field. handwritten recognition (hwr) is the ability of computer for receiving and interpreting conceivable handwritten input from sources like paper received december 28, 2024; revised april 03, 2025 and august 07, 2025; accepted august 10, 2025 corresponding author: hossein kardanmoghaddam department of electrical and computer engineering, university of mohaghegh ardabili, ardabili, iran e-mail: kardanmoghaddam@uma.ac.ir https://orcid.org/0000-0002-9304-5093 https://orcid.org/0000-0002-7019-9655 https://orcid.org/0009-0004-4522-2421 https://orcid.org/0000-0002-6786-7763 https://orcid.org/0000-0003-2764-6373 698 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... documents, image, touch screen and other devices. text detection is an old research problem for digitalization of documents. natural language processing is a field of artificial intelligence uses linguistic and computational techniques for helping computers in perceiving and producing human languages in written and spoken forms [1]. among the most important issues in the realm of natural language processing are automatic translation, question and answering systems, retrieving and searching information, text summarization and emotion analysis [2][3]. in recent years, deep learning models have been presented for detecting and recognizing text contents that compared with traditional models and machine learning have higher power meaning modeling and word sequence [1][4][5]. deep learning models can extract hidden and inherent details of meaning from a sequence of deep neural network layers and during decision making act on the basis of text meaning [6][7]. deep models using deep neural structures and layers inside them can learn automatically desirable features in applied realm and usually obtain better results. in natural language processing, like transformer based models and deep learning techniques such as bert and gpt-3 the capacity of condense text automatically has been improved considerably [8][9][10]. however, the challenges of perceiving complex occasions of text and correcting biases in textual data are continuous [11-15]. nowadays because of high density of scanned documents and information, one of the main functions of natural language processing is retrieving these data to the computer documents and classifying this information and searching among them. companies and organizations using text classification can automatically organize and order any kind of text such as e-mail, legal documents, social media, chat bots, surveys and other cases in a fast and economical way. text classification is one of machine learning methods allocates a collection of predefined classes to the text. text classification is one of the fundamental duties in natural language process with widespread usages like sentiment analysis, topic labeling and spam detection. machine learning-based text classification learns to classify the text based on past observations. using pre-labeled samples as training data, machine learning algorithms can learn different relations among the texts and for each unique input, they allocate a special label. the “label” is the class or desired set that each input text can be placed in a special set. converting text data into quantitative data for obtaining practical insight and scientific and business decisions is very useful. this paper presents a new transformer-based structure and integrates it with large language models (combining trocr with an llm) to improve the accuracy of handwritten text recognition and classification, yielding better results than traditional methods. 2. research background in this section, we will examine some proposed research of different researchers based on deep learning presented for detecting and evaluating in texts: in research (dhivyaa et al.) [16], fine-tuned convolutional neural network has been proposed for detecting tmail handwritten text. the proposed approach includes using pre-trained convolutional neural network models and their exact adjustment on collection of tmail handwritten characters. in research (daniel parres et al) [17], pre-trained visual encoderdecoder transformers have been used for detecting handwritten text in historical documents. in research (mehar prateek kalra et al) [18] examined how to combine handwritten text recognition (htr) systems with llm. given the impressive https://ieeexplore.ieee.org/author/37089351261 https://link.springer.com/chapter/10.1007/978-3-031-41685-9_16#auth-daniel-parres https://www.researchgate.net/scientific-contributions/mehar-prateek-kalra-2258103521?_tp=eyjjb250zxh0ijp7imzpcnn0ugfnzsi6inb1ymxpy2f0aw9uiiwicgfnzsi6inb1ymxpy2f0aw9uin19 a structure based on trocr transformer and large language model for classification of .... 699 capabilities of llms in language understanding and processing, this integration could be especially beneficial in fields that demand high accuracy in text recognition. in research (jan kohút et al) [19], the effect of fine-tuning methods on handwriting recognition is investigated. the research emphasizes that fine-tuning is a simple and effective method for domain adaptation in handwritten text recognition and can significantly improve handwriting recognition systems' performance. kumar and raman [20] has used bert model as a placement method and in next layers a bi-channel structure that the first channel contains convolution layers and the second channel contains bilstm. in their proposed method, convolution layer has been used for modeling local features of text, and bilstm has been used for modeling word sequence. badpeima et al [21] have used combined long-short term memory recurrent network for extracting features and support vector machines for classifying persian texts in three groups of positive, negative and neutral. in this model, after pre-processing and extracting word bank, the raw text has been used as input for recurrent networks. in the following, vectors resulted from the network output has been averaged and finally have been classified by support vector machine. onan [22] analyzed review database containing 66000 comments using machine learning methods, ensemble learning and deep learning methods. in research [23], a multimodal fusion neural network with dual-attention based on textual doubleembedding networks for rumor detection has been proposed consider both images and texts and comparing experiments have been carried out on two sets of weibo and twitter. in the research (majma et al) [24] using blocking criteria of text and cosine similarity, copying in scientific texts has been detected. in the research (behzadidoost et al) [25] a deep learning model based on granular computation has been proposed for text classification. in the research (feizi-derakhshi et al) [7] it has been proposed that convolutional neural network and bidirectional long short term memory neural network with attention layer used for classification of persian texts. 3. modern deep learning methods in the realm of text recognition modern deep learning methods in the realm of text recognition (ocr-optical character recognition) because of processing ability and detecting convoluted texts in images or videos are very important. the first method is crnn (convolutional recurrent neural network) is a fusion of convolutional neural network for extracting visual features and recurrent neural networks for modeling time sequencing. its usage is detecting sequence texts like handwritten or printed ones in the images [26]. the second method is transformer-based ocr (trocr) from microsoft uses vision transformer (vit) and linguistic transformer for text recognition and its main usage is detecting printed and handwritten texts with high accuracy [27]. the third method is east (efficient and accurate scene text detector) which is an efficient model detecting textual areas in images, without requiring exact classification. its usage fused with ocr for text recognition in convoluted images, is like scanned documents [28]. the fourth method, is the ctc (connectionist temporal classification) which is a deep learning algorithm designed for modeling issues related to sequence data without requiring exact alignment between input and output. this structure is usually applied in cases like speech recognition, text recognition (ocr) and sequence analysis [29]. the fifth method, is the https://arxiv.org/search/cs?searchtype=author&query=koh%c3%bat,+j 700 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... pre-trained models that in this method deep learning models are used previously trained on big data sets and ready for direct usage and some cases are: ▪ easyocr: a library with support for multiple languages [30]. ▪ paddleocr: comprehensive framework with the capability of text recognition in multilingual images [31]. ▪ keras ocr: open text framework for teaching and using ocr models [32]. the sixth method is vision-language models for ocr that this method is set of deep learning methods fusing the computer visual capabilities and natural language processing for recognition, interpretation and comprehension of text from images. these models are more advanced than traditional ocr methods and are used in complex cases such as text recognition in multi-page documents, chart analysis or images with disordered or sparse texts [33]. these models comprise two main parts: ▪ vision module: this module is responsible for analysis of visual aspects of an image. most of the time, computer vision advanced structures like vision transformer (vit), resnet or cnn are used for extracting visual features. ▪ language module: this part processes extracted text features and interprets their language content. language structures like transformer or bert is used for text production by language structure. among the prominent cases of vision-language models for ocr we can name donut (document understanding transformer) [33] and trocr [27] and layoutlm [34]. 4. the advantages of pre-trained models in trocr the pre-trained models in trocr propose some key advantages for optical character recognition that considerably improves performance compared with traditional methods: 4-1. lowering need for labeled data: pre-trained models are trained with big and general data (labeled and without label). this method lowers the cost and needing to get high density of labeled data and also provides high accuracy level. pre-trained level data include large sets of handwritten or printed texts made with artificial data production tools. 4-2. better generalization of trocr: it uses extracted general features in pre-trained stage and can be adjusted for more special data. this feature causes that the model can act with higher accuracy on manifold languages, fonts and text structures. 4-3. increases speed of fine-tuning: using pre-trained models lowers time and computation resources required for adjustment with more special tasks as the model has previously learnt general knowledge of the text and visual features. 4-4. advanced performance in multilingual texts recognition: transformer based structure in trocr like using models like beit and roberta, improves recognition of different lingual structures and makes it suitable for multilingual usages. 4-5. higher quality in convoluted text recognition: the structure of vision encoder and language decoder in trocr provides the possibility of exact extraction of visual features (like word form and arrangement) and their combination with lingual information. this feature is very effective especially in cases with noised or low quality images. a structure based on trocr transformer and large language model for classification of .... 701 4-6. transfer learning: using known models like beit and roberta for encoder and decoder parts contributes on transferring knowledge from similar ranges and improves the performance. 4-7. compatibility with modern structure: using structural benefits of transformer like self-attention and multi head attention, increases precision and speed of processing. these benefits have caused that trocr be considered as one of the best existing models in printed, handwritten and convoluted text recognition tasks [27]. 5. large language models large language models (llm) are one of the latest advancements in artificial intelligence having the required ability in producing a text with high quality and precision. these models use convoluted structures and deep neural networks that enables them to produce a coherent text compatible with a realm of subjects. using these models considered as deep learning algorithms, machines can understand the human’s talking and produce something like that. in this way, they can arrange a dialogue with a person and this dialogue can be very beneficial. these models can be considered as a very smart and talented person that spends all of his time on studying and learning from different sources and now s/he can answer the person’s questions in different realms and in many cases helps the person. gradually these models learn new information from this process of asking and answering, and gives better answers to the person. the basic structure of llm has been made based on transformers and this advancement was proposed in 2017 and due to its unique efficiency, it has been converted to natural language processing milestone at high speed [35]. transformer model is considered as one of the most important elements of llm that can be trained with high amount of manifold data. using these large datasets causes that we call them large data. some of the key usages of llm models include automatic content producing, machine translation, natural language processing and answering systems to questions. llm can analyze huge amount of data, learn lingual patterns enabling them to produce logical and meaningful sentences often cannot be recognized from the handwritten text [36]. some of the significant cases of llm are gpt [37] developed by openai and bert [38] and t5 [39] developed by google. these models have learnt convoluted lingual patterns through analysis of large amount of data that enables them to produce sentences which are both logical and rich-content and their output differentiation challenges handwritten text. the main benefit of these models is their unique capability in comprehending and producing a high quality text in multiple languages and also presenting exact answering to questions with different complexities. therefore, llm have widespread applications in the realms like machine translation, chat robots, automatic content producing and even advice systems. according to these capabilities, llms are not only powerful devices for natural language processing, but they have been considered as key elements in developing ai-based technologies. for using a llm for different tasks, a common approach, fine-tuning a pre-trained model on specific task data has been proposed [36][38]. this fine-tuning is vital for optimizing the performance of llm in special programs. the exact fine-tuning a lingual model can be computationally intensive, usually requires updating all parameters in pre-trained model and the fine-tuned model can have parameters the same as the key model [40]. 702 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... 5.1 fine-tuning language models training a llm at first requires time and considerable financial resources. using thousands of gpu can last several days [41] and requires considerable financial investment [42]. fine-tuning pre-trained models has been emerged as an efficient method for obtaining llm benefits. for starting fine-tuning process, at first a pre-trained language model like bert, gpt or llama is chosen, then data related to task or required range are gathered. these data can include texts, questions and answers or any other kind of information and then model parameters are fine-tuned to be compatible with new data. this includes choosing learning rate, the number of training courses and other fine-tunings and after that the model is trained using special data. this stage includes several training courses so that the model can be compatible with data so well and after that the model performance on experimental data is evaluated and when required, more fine-tuning is performed [43]. fine-tuning is the process of compatibility of a pre-trained model with a special task by training it on data related to task, and finally improves it. this approach has been accepted widely, as this allows the researchers to use pre-trained models with general aim and design them for meeting special needs. many organizations like meta (facebook) with their llama [44] make their pre-trained models accessible to the public. this pre-trained models accessible to the public can be fine-tuned with different downstream tasks and using fine-tuning convert them to the most practical way for using llm benefits. however, the complete fine-tuning of llm is computationally expensive, as it needs updating all model parameters. 6. used dataset in this research the dataset used in this study is known as the english handwritten line dataset. it comprises approximately 400 images of handwritten lines in english, which are utilized to train and evaluate machine learning and computer vision models related to handwritten text recognition. this dataset features images of handwritten text created by different individuals, each accompanied by labels corresponding to the content of the images. the dataset is particularly effective for training deep learning models, such as convolutional neural networks (cnns) and recurrent neural networks (rnns) like lstm (long shortterm memory), to transform handwritten text into digital text. by leveraging this dataset, models can be developed to comprehend handwritten text and apply it in natural language processing (nlp) tasks such as translation, summarization, and text analysis. furthermore, this dataset serves to enhance optical character recognition (ocr) systems that convert handwritten text into digital formats. it is widely regarded as a standard data source for both training and evaluating various machine learning and deep learning models within the field of handwritten text recognition. each image in the dataset is paired with a text file that contains the corresponding text, which can be used to train models effectively. the diversity of examples within this dataset aids in improving the accuracy and efficiency of handwritten text recognition systems. an example of these images can be seen in figure 1. fig. 1 an example image of the english handwritten line dataset a structure based on trocr transformer and large language model for classification of .... 703 this dataset can be combined with the iam dataset [45] to create a real-time handwriting recognition system. to use this dataset, you can visit the kaggle site or github by following the links [46] and [47]. 7-the proposed structure in this research the methods proposed so far about printed and handwritten text content typically have used traditional methods and llm and trocr has not been used in combination. meanwhile by developing deep learning methods and using pre-trained models and also using llms speed and productivity have been progressed in many cases. nowadays most of the texts are obtained in film-taking mode that are required to be processed and even corrected before entering llm so that they can be categorized correctly. in this research a structure based on trocr and llm has been proposed that the main aim of this research is extracting text from existing images in an english handwritten line dataset by using pre-trained models. table 1 outlines the pre-trained models utilized in this study along with their respective characteristics. table 1 pre-trained models trocr pre-trained models features microsoft/trocrbase-handwritten based on “base” transformer structure especially has been designed for handwritten text and optimized for recognition of text in images containing handwritten texts microsoft/trocrsmall-handwritten the smaller version of trocr(small)with less computational amount is suitable for systems with limited computational resources with acceptable performance in handwritten recognition microsoft/trocrlarge-handwritten the large version with high capacity for better learning of convoluted patterns, is suitable for cumbersome tasks requiring high precision like processing sensitive or complicated documents, suitable for use in research projects, reading handwritten texts with complicated details and organizational and industrial usages requiring high precision these pre-trained models by microsoft have been trained using general ocr data and handwritten texts and after that the obtained information has been saved on a csv file then this csv file contains obtained texts from images is given to llm as an input so that the extracted texts are categorized into different subjects (“health”, “technology”, “finance”, “education”, “sports”, “others”) based on the content. the order of proposed stages and structure used has been illustrated in figure 2. as we can see in figure 2, after uploading ocr model and entering dataset images and performing elementary steps, data are given to the transformer model as input. transformer-based models include two parts: encoder, decoder. the encoder part processes the input and converts it to a rich vector representation. in this case, the input is given to the model as a text or image and at first the words or the elements are converted to the embedding vectors. vectors cross self-attention layers where the model learns the relation between each word and element with other words and elements and then encoder output is a compressed representation of total input sent to decoder. the next part is decoder uses output vector of encoder and converts it to final output like text, translation or any other format. unlike rnns that process data in ordinal manner, transformers can 704 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... process data in parallel manner leading to high speed computations. transformers due to using self-attention and parallel processing can model long-term relationships in ordinal data so well. this capability has made them more efficient for many deep learning tasks [35]. transformer-based optical character is a modern method for recognition of optical characters based in transformer models. this model has been developed by microsoft research team and uses transformer structure for extracting text from the images [27]. the architecture of this method can be observed in figure 3. fig. 2 proposed structure fig. 3 the architecture of trocr [27] a structure based on trocr transformer and large language model for classification of .... 705 the trocr is easy but effective and it can be fine-tuned with artificial data in pre-trained large scale with labeled dataset by human. in research (li et al) [27] is was illustrated that trocr model has performed better in printed and handwritten text recognition tasks than advanced models. microsoft has presented pre-trained trocr models for printed and handwritten texts. these models due to early pre-training, are better starting point for processing the images. in this research transformer ocr (trocr) has been used for recognition of handwritten texts from images developed by microsoft uploaded in two parts: ▪ trocr processor: the task of input processing (images) and transforming them into a suitable format for the model. ▪ vision encoder decoder model: deep learning model that recognizes the handwritten text from the images and produces a text according to them. after using trocr for converting image to text, the obtained texts have been given to a llm as an input. the basic architecture of llms has been made on the basis of transformers, this progression was introduced in 2017 and because of its unique efficiency and it has been turned into a milestone of natural language processing [35]. large language model of facebook/bart-large-cnn used in this research is one of the advanced models of natural language processing developed by facebook. this model has been made based on bart (bidirectional encoder representations from transformers) and is used for tasks like text summarization, machine translation and natural language comprehension. the bart model has been trained by a self-supervised pre-training. in this method, the model is trained on a large dataset from unlabeled texts. this process helps the model to comprehend the language structure and relation between the words. bart is a combination of bidirectional models (like bert) and self-regression (like gpt). bart uses attention mechanism for text processing and helps it to comprehend the relation between the words better [48] [49]. the input texts to llm has been categorized in pre-determined categories (like (“health”, “technology”, “finance”, “education”, “sports”, “others”). 8. results in the classification discussion a dataset using classification methods, is the aim of achieving the highest possible precision and accuracy in classification and recognition of sets. in some problems, the correct recognition of samples related to one of the sets is very important for us. confusion table or matrix represents the results of classification based on real existing information. now on the basis of these values we can classify different evaluating criteria and define precision measurement. the confusion matrix is one of the most important tools for evaluating multi-class machine learning models. it serves as a method to assess the performance of classification models by comparing their predictions with the actual values. the matrix highlights where the model has made errors, offering insights into how its performance can be improved. additionally, by calculating metrics such as precision, recall, and f1-score, we can obtain a comprehensive evaluation of the model's performance for each class. here we examine three cases based on pre-trained model of trocr and llm. the confusion matrix has been used for a case of pre-trained trocr model microsoft/trocr-base-handwritten and llm also has been used for text classification as facebook/bart-large-cnn. the obtained results have been presented in table 2. 706 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... table 2 confusion matrix for the case where the microsoft/trocr-base-handwritten model and llm are used predicted class others sports finance education health technology 39 1 1 2 5 41 technology a ct u al c la ss 12 0 0 0 1 2 health 6 0 0 0 0 0 education 3 0 0 0 0 0 finance 1 1 0 0 0 0 sports 173 2 0 4 20 22 others now we obtain the values of precision, recall, accuracy, f1-score for the above table. ii i jij m precision m =  (1) ii i ijj m recall m =  (2) 2 1 precision recall f score precision recall   − = + (3) that the results obtained from table 2 has been conformed to table 3. table 3 the results of text classification by the model microsoft/trocr-base-handwritten and llm others sports finance education health technology 0.739 0.25 0 0 0.0384 0.63 precision 0.782 0.5 0 0 0.066 0.460 recall 0.7598 0.3333 0 0 0.04855 0.5317 f1-score 0.6428 accuracy in the second case, for the case of pre-trained model of trocr and llm has been according to table 4. table 4 pre-trained trocr and llm model used in the second case llm used pre-trained model trocr facebook/bart-large-cnn microsoft/trocr-large-handwritten the confusion matrix has been obtained as table 5. a structure based on trocr transformer and large language model for classification of .... 707 table 5 confusion matrix for the case where the microsoft/trocr-large-handwritten model and llm are used predicted class others sports finance education health technology 31 0 0 2 4 52 technology a ct u al c la ss 10 0 0 0 2 3 health 5 0 0 0 1 0 education 1 0 2 0 0 0 finance 1 1 0 0 0 0 sports 165 3 1 4 12 36 others now we obtain the values of precision, recall, accuracy, f1-score for table 5 that the results have been presented in table 6. table 6 the results of text classification by the model microsoft/trocr-large-handwritten and llm others sports finance education health technology 0.774 0.25 0.666 0 0.105 0.571 precision 0.7466 0.5 0.666 0 0.133 0.584 recall 0.760 0.3333 0.666 0 0.1173 0.5774 f1-score 0.6529 accuracy in the third case, for the case of pre-trained model of trocr and llm has been according to table 7. table 7 pre-trained trocr and llm model used in the third case llm used pre-trained model trocr facebook/bart-large-cnn microsoft/trocr-small-handwritten the confusion matrix has been obtained as table 8. table 8 confusion matrix for the case where the microsoft/trocr-small-handwritten model and llm are used predicted class others sports finance education health technology 48 3 1 6 3 28 technology a ct u al c la ss 12 0 0 0 2 1 health 3 0 0 0 1 2 education 3 0 0 0 0 0 finance 2 0 0 0 0 0 sports 168 5 5 8 13 22 others now we obtain the values of precision, recall, accuracy, f1-score for table 8 that the results have been presented in table 9. 708 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... table 9 the results of text classification by the model microsoft/trocr-small-handwritten and llm others sports finance education health technology 0.7118 0 0 0 0.105 0.5283 precision 0.7601 0 0 0 0.133 0.314 recall 0.7351 0 0 0 0.1173 0.3938 f1-score 0.5823 accuracy 9. discussion handwritten text recognition and classification has long been a significant challenge in the fields of image processing and natural language processing (nlp). this difficulty arises from the variety of writing styles, the differences in letter shapes, and the noise present in images. handwritten text recognition has been progressed considerably in recent years and this issue is mainly because of combining deep learning techniques. modern deep learning methods like crnn, trocr, east, and ctc in combination with pre-made models and transformer architecture, have provided high precision and efficiency in recognition of texts from images. among the famous models based on transform we can name gpt (generative pre-trained transformer) [50] for producing text, model of bert (bidirectional encoder representations from transformers) [38] for language comprehension and t5 model [39] for transforming text into text (for translation, summary and …) and model of vision transformer (vit) [51] for image processing and model of trocr [27] for handwritten text recognition from the images. this paper introduces a new framework built on advanced models designed to enhance accuracy and efficiency in the field. the importance of this research lies in its integration of two cutting-edge technologies from natural language processing and computer vision. by combining trocr with large language models, we can achieve greater accuracy and efficiency in classifying handwritten text. this integration streamlines both the complex pre-processing and post-processing steps, minimizing the need for separate models. in this research, pretrained model of trocr has been used for image processing and text extraction. trocr can be combined with advanced tools like language recognition models, image processing tools or large language modes to present high performance. the trocr model is based on transformer architecture and is specifically designed for recognizing text from images. by integrating image processing with natural language processing capabilities, this model offers enhanced performance in recognizing handwritten text. the application of this model in this paper reflects the latest technological advancements in this field. trocr is usually pre-trained on large scale data (like digital documents or images containing text) and also there are different versions of trocr for recognition of printed and handwritten texts that in this research as the used information bank was in handwritten format we just have used handwritten versions of trocr. this research uses large language models to improve text classification. these models can help increase the accuracy of handwritten text recognition and classification by better understanding the meaning of the text and its context. combining trocr with llm is an innovative approach that can provide better results than traditional methods. overall, the use of this structure can lead to significant improvements in handwritten text recognition and classification systems. in this study, the initial stage involved using a database that includes a text file (in .txt format) which a structure based on trocr transformer and large language model for classification of .... 709 can be downloaded alongside the image database. this text file contains the content for all the images. to classify the texts, we first performed text classification into six categories: "technology," "health," "education," "finance," "sports," and "others." this classification was carried out separately on the text file using a large language model (llm). the results of this classification served as the evaluation criterion for categorizing images in the subsequent stages. in the next step, the trocr model was utilized to load images and extract text from the english handwritten line dataset. these images were then converted into text data. following this, the extracted text data was analyzed for classification using the bart model, which is based on a large language model (llm). the output of this classification process was saved as a .csv file. the output file from cases where images were converted to text using the trocr model and subsequently classified with llm was compared to instances where text files (.txt) related to the dataset were classified using llm (first stage). the level of agreement in text classification between the two methods was then evaluated. when comparing the results of two methods—the first using the trocr model to convert images to text and subsequently classifying that text with a language model (llm), and the second using a text file with a database for classification with the llm—there is a noticeable difference of about 30 percent. this discrepancy is expected, as the database is based on handwritten text and the output from trocr remains unaltered. in this research the extracted texts from images by trocr haven’t been corrected and upgraded and this has lowered the text recognition and consequently decreased the output of classification of texts. if the obtained texts from images are corrected and upgraded before entering llm, it will have better result in text classification and this can be done by fine-tuned models of llm and other new methods like vae and other techniques. in many cases, when reading texts indie images and transformed into text (.txt), the correction is required as some characters or words may lose their forms or even some of the letters or words may be deleted to added or deformed and require correction that these are performed by generative models in nlp and these cases are suggested as future researches in this realm along with combination with other image processing techniques. one of the techniques suggested as an efficient research in the future is using variational autoencoder(vae) for making deformed characters and words in the text. vae is a kind of neural network used for making new data similar to training data. by using vae we can use text for making new images in order to improve the performance of trocr. we can also use vae for decreasing the dimensions of the images and upgrading data quality before entering trocr model and in some cases, vae can be used with trocr as one part of combinational architecture, in a manner that extracted features of vae in trocr are used. this paper signifies a major breakthrough in the fields of image and natural language processing. the employment of transformer-based architectures, combined with the integration of large language models, represents an important advancement toward improving ai systems for more complex applications. this paper can serve as a reference for future research in handwritten text recognition and the integration of image processing models with large language models. additionally, the methods presented may inspire developers to create similar systems in other domains. 710 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... 10. conclusions in their study, chae and davidson (2023) [52] highlight that large language models (llms) excel in text classification tasks, significantly outperforming traditional methods. they note that these models can achieve high accuracy with minimal training examples and instructions, making them valuable tools for sociologists. furthermore, the study suggests that fine-tuning smaller models provides an optimal solution for researchers. wang et al. (2023) [53] analyzed the performance of gpt models in text classification. the researchers compared the capabilities of zero-shot llms with other advanced text classification methods, including traditional machine learning and deep learning techniques. the experimental results demonstrated that llms can effectively function as zero-shot text classifiers, showing strong performance in three out of four datasets examined in the study. in research conducted by zhong et al. (2024) [54], a semisupervised learning framework was introduced specifically for text classification tasks. this study solely focuses on text classification and does not involve image processing or image-to-text conversion. the framework was tested on two datasets: reuters 20 newsgroups and web of science, achieving accuracy rates of 95.41% and 82.43%, respectively. in 2024, fabio dennstädt and his colleagues [55] developed a generalpurpose text classification framework utilizing llms for classifying oncological trials, achieving an overall accuracy of over 94%. guo et al. (2024) [56] assessed the effectiveness of llms in text classification tasks using methods such as zero-shot classification, data annotation, and data augmentation. they found that llms, particularly gpt-4, demonstrated improved performance when combined with human-annotated data. the study indicates that data augmentation using llms yields better results than training with human-annotated data alone. liu and shi (2024) [57] introduced the poliprompt framework, a high-performance and cost-effective text classification system based on llms specifically for political science applications. this framework employs in-context learning, automatic prompt generation, and consensus mechanisms. it significantly reduces economic costs by 78% compared to traditional human labeling methods and achieves an improvement of 0.36 in the f1 score for zero-shot classification tasks. in research conducted by mohajeri et al. (2024) [58], the authors proposed a method called the code completion prompt (cocop), which leverages the capabilities of llms for text classification. this innovative approach transforms the text classification problem into a code completion task, resulting in improved accuracy of nearly 20% on the sst-2 dataset. the method was tested on several datasets, including sst-2, cola, mrpc, and snli, achieving the following best results: 93.5 ± 0.5, 78.5 ± 1.2, 77.4 ± 0.8, and 67.7 ± 2.1, respectively. in the study by zhang et al. (2024) [59], text classification was performed on four datasets: sst-2, ag, ohsumed, and mr. the researchers achieved accuracy rates of 98.68%, 97.61%, 77.41%, and 94.27%, respectively. they proposed the rgpt framework, which performed 1.36% better than sota plm8 and sota llm7 across four criteria on average. yin et al. (2024) [60] proposed the crisissense-llm method for text classification. this approach utilizes a pre-trained large language model that has been specifically fine-tuned for text classification tasks. the model incorporates low-rank adaptation (lora), which introduces additional trainable parameters and enhances its performance. in another study, di palo et al. (2024) [61] presented the performanceguided knowledge distillation (pgkd) method for text classification. this method completed text classification tasks up to 130 times faster and 25 times cheaper than llms. the study demonstrates that pgkd outperforms traditional bert-based models a structure based on trocr transformer and large language model for classification of .... 711 in multi-class classification. recent approaches in text classification, such as cocop (which transforms text classification into a code completion task) [58], rgpt (increasing accuracy over sota models) [59], crisissense-llm (which utilizes lora to improve text classification) [60], and pgkd (which reduces computational costs by up to 130 times) [61], illustrate the rapid development of innovative and adaptable methods using large language models (llms). recent research reviews indicate that llms can serve as accurate, cost-effective, and reliable tools for classifying specialized texts. however, a review of past studies shows that the input data has typically been structured text, with no research conducted on using unstructured text data, such as images, as input. this highlights the necessity to explore the utilization of unstructured input data, specifically images, in text classification. recent studies, such as those by chae & davidson (2023) [52] and wang et al. (2023)[53], have focused on digital and structured text classification, demonstrating the effectiveness of large language models (llms) in zero-shot or fewshot formats with accuracies reaching or exceeding 90%. semi-supervised approaches, like the one conducted by zhong et al. (2024) [54], and techniques based on specific prompt designs, such as cocop [58], have also achieved over 90% accuracy in controlled environments. additionally, research by fabio et al. (2024) [55], liu & shi (2024)[57], and zhang et al. (2024) [59] has successfully optimized llms for more precise and domain-specific classification by creating specialized frameworks tailored to specific fields, including medical, social, scientific, and political domains. the proposed method in this research involves extracting handwritten texts from images within a database dataset and converting them into text data. this extracted text data is then fed into a large language model (llm) for categorization based on content using the bart model. the research presents a framework for text classification through the integration of the trocr model and large language models. the results indicate that among the pretrained trocr models, the large version performs the best in text classification, achieving an accuracy of nearly 65%. the method proposed in this study demonstrates superiority when working with unstructured and image-based data, unlike other methods that require textual data. this study stands out from most others as it focuses on image data rather than just digital text. by combining trocr with linguistic models, it allows for the processing of real, unstructured documents. this capability has the potential to lead to the development of systems that can automate the analysis of forms, contracts, and manuscripts. however, the classification performance in this study still requires optimization when compared to the accuracy of fine-tuned models designed for structured texts. future studies could enhance performance by utilizing more advanced ocr models, fine-tuning the language model used, or applying data augmentation techniques. although the method presented in this study has lower accuracy compared to purely textual methods, it excels at processing more complex data. it offers a significant advantage in applications where data is available in image form. the innovation of this method lies in its use of advanced optical character recognition (ocr) models alongside large language models, making it highly suitable for real-world projects that involve scanned or unstructured data. this approach is particularly valuable in environments with image data, especially when information is stored in handwritten formats within forms or archives. however, for applications where data is available in structured text form, other methods such as rgpt, cocop, or poliprompt are more effective, offering higher accuracy at a lower cost. 712 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... references [1] d. w. otter, j. r. medina and j. k. kalita, "a survey of the usages of deep learning for natural language processing," ieee trans. neural netw. learn. syst., vol. 32, no. 2, pp. 604-624, feb. 2021. [2] a. khosravi and h. abdolhosseini, "personality in social networks using thematic modelling of user feedback", soft comput. j., vol. 11, no. 2, pp. 51-60, 2023. [3] f. pourgholamali, m. kahani and e. asgarian, "exploiting big data technology for opinion mining", soft comput. j., vol. 9, no. 1, pp. 26-39. [4] f. a. acheampong, c. wenyu and h. nunoomensah, "text-based emotion detection: advances, challenges, and opportunities", eng. rep., vol. 2, no. 7, p. e12189, 2020. [5] b. kratzwald, s. ilić, m. kraus, s. feuerriegel and h. prendinger, "deep learning for affective computing: text-based emotion recognition in decision support," decis. support syst., vol. 115, pp. 24-35, nov. 2018. [6] f. zare mehrjardi, m. yazdian-dehkordi and a. latif, "evaluating classical machine learning and deep-learning methods in sentiment analysis of persian telegram message", soft comput. j., vol. 11, no. 1, pp. 88-105, 2022. [7] m. feizi-derakhshi, z. mottaghinia and m. asgari-chenaghlu, "persian text classification based on deep neural networks", soft comput. j., vol. 11, no. 1, pp. 120-139. [8] s. freyberg and h. hauser, "the morphological paradigm in robotics", stud. hist. philos. sci., vol. 100, pp. 1-11, 2023. [9] a. ganesh, a. jaya and c. sunitha, "an overview of semantic based document summarization in different languages", ecs trans, vol. 107, no. 1, pp. 6007-6017, 2022. [10] l. geiszler, "imitation in automata and robots: a philosophical case study on kempelen", stud. hist. philos. sci., vol.100, pp. 22-31, aug. 2023. [11] v. k. finn, "exact epistemology and artificial intelligence", autom. document. math. linguist., vol. 54, pp.140-173, 2020. [12] f. ansari, "knowledge management 4.0: theoretical and practical considerations in cyber physical production systems”, ifac-papersonline, vol. 52, no. 13, pp. 1597-1602, 2019. [13] e. baralis, l. cagliero, s. jabeen, a. fiori and s. shah, "combining semantics and social knowledge for news article summarization", in data mining and analysis in the engineering field, igi global, 2014, pp. 209-230. [14] l. waardenburg and m. huysman, "from coexistence to co-creation: blurring boundaries in the age of ai", inf. organ., vol.32, no. 4, p. 100432, dec 2022. [15] s. gupta, s. modgil, a. kumar, u. sivarajah and z. irani, "artificial intelligence and cloud-based collaborative platforms for managing disaster, extreme weather and emergency operations", int. j. prod. econ., vol. 254, p. 108642, dec 2022. [16] c. r. dhivyaa, k. nithya, r. dharshini, r. sudhakar., k. sathis kumar and t. janani. "fine-tuned convolutional neural networks for tamil handwritten text recognition.", in proceedings of the 8th international conference on communication and electronics systems (icces), 2023, pp. 887-893. [17] d. parres and r. paredes, "fine-tuning vision encoder–decoder transformers for handwriting text recognition on historical documents" in proceedings of international conference on document analysis and recognition. 2023, pp. 253-268. [18] m. p. kalra, a. kushwaha and p. p. vuppuluri, "llm powered htr: integrating handwritten text recognition system with large language model," in proceedings of ieee students conference on engineering and systems (sces), prayagraj, india, 2024, pp. 1-6. [19] j. kohút and m. hradiš. "fine-tuning is a surprisingly effective domain adaptation baseline in handwriting recognition", in proceedings of international conference on document analysis and recognition, arxiv:2302.06308, 2023. [20] p. kumar and b. raman, "a bert based dualchannel explainable text emotion recognition system," neural netw., vol. 150, pp. 392-407, june 2022. [21] m. badpeima, h. shirazi and s.s. sadidpur, "determining the polarity of persian texts using lstm recurrent networks", in proceedings of the 3rd international conference on electrical, electronic, and computer engineering, norway, 2016 [in persian]. [22] a. onan, "sentiment analysis on massive open online course evaluations: a text mining and deep learning approach", comput. appl. eng. educ., vol. 29, no. 3, pp. 572-589, 2021. [23] h. han, z. ke, x. nie, l. dai and w. slamu, "multimodal fusion with dual-attention based on textual double-embedding networks for rumor detection," appl. sci., vol. 13, no. 8, p. 4886, 2023. [24] n. majma and s.bashtin, "detection of plagiarism in scientific texts based on text blocking and cosine similarity criteria", soft comput. j., vol. 11, no. 1, pp.60-71, 2022. a structure based on trocr transformer and large language model for classification of .... 713 [25] r. behzadidoost, f. mahan and h. izadkhah, "granular computing-based deep learning for text classification," inf. sci., vol. 652, p. 119746, 2024. [26] b. shi, x. bai and c. yao, "an end-to-end trainable neural network for image-based sequence recognition and its application to scene text recognition," ieee trans. pattern anal. mach. intell., vol. 39, no. 11, pp. 2298-2304, 2017. [27] m. li, t. lv, j. chen, l. cui, y. lu, d. florencio, c. zhang, z. li and wei, f., " trocr: transformerbased optical character recognition with pre-trained models", in proceedings of the aaai conference on artificial intelligence, vol. 37, no. 11, pp. 13094-13102, 2023. [28] x. zhou, c. yao, h. wen, et al., " east: an efficient and accurate scene text detector", in proceedings of the ieee conference on computer vision and pattern recognition (cvpr), 2017, pp.5551-5560. [29] h. sak, a. senior and f. beaufays, "long short-term memory based recurrent neural network architectures for large vocabulary speech recognition",, arxiv:1402.1128, 2014. [30] [online]. available: https://github.com/jaidedai/easyocr [31] [online]. available: https://github.com/paddlepaddle/paddleocr [32] [online]. available: https://github.com/faustomorales/keras-ocr [33] g. kim, t. hong, m. yim, j. y. nam, j. park, j. yim, w. hwang, s. yun, d. han and s. park. "ocr-free document understanding transformer", in proceedings of european conference on computer vision, 2022, pp. 498-517. [34] y. xu, m. li, l. cui, s. huang, f. wei and m. zhou, "layoutlm: pre-training of text and layout for document image understanding." proceedings of the 26th acm sigkdd international conference on knowledge discovery & data mining. 2020, pp. 1192-1200. [35] a. vaswani, n. shazeer, n. parmar, j. uszkoreit, l. jones, a. n. gomez and i. polosukhin, " attention is all you need", adv. neural inf. process. syst., vol. 30, pp. 1-15, 2017. [36] t. brown, b. mann, n. ryder, m. subbiah, j. d. kaplan, p. dhariwal, a. neelakantan, p. shyam, g. sastry, a. askell and s. agarwal, " language models are few-shot learners", adv. neural inf. process. syst., vol. 33, pp. 1877-1901, 2020. [37] j. achiam, s. adler, s. agarwal, l. ahmad, i. akkaya, f. l. aleman, d. almeida, j. altenschmidt, s. altman, s. anadkat and r. avila, "gpt-4 technical report", arxiv preprint arxiv:2303.08774, 2023. [38] j. devlin, m. w. chang, k. lee, and k. toutanova, "bert: pre-training of deep bidirectional transformers for language understanding", in proceedings of the conference of the north american chapter of the association for computational linguistics: human language technologies, 2019, pp. 4171-4186. [39] c. raffel, n. shazeer, a. roberts, k. lee, s. narang, m. matena and p. j. liu, " exploring the limits of transfer learning with a unified text-to-text transformer", j. mach. learn. res., vol. 21, no. 140, pp. 1-67, 2020. [40] k. lv, y. yang, t. liu, q. gao, q. guo, and x. qiu, "full parameter fine-tuning for large language models with limited resources", arxiv preprint arxiv: 2306.09782, 2023. [41] d. narayanan, m. shoeybi, j. casper, p. legresley, m. patwary, v. korthikanti, d. vainbrand, p. kashinkunti, j. bernauer, b. catanzaro and a. phanishayee, "efficient large-scale language model training on gpu clusters using megatron-lм", in proceedings of the international conference for high performance computing, networking, storage аnd analysis, 2021, pp. 1-15. [42] o. sharir, b. peleg, and y. shoham, "the cost of training nlp models: a concise overview," arxiv preprint arxiv: 2004.08900, 2020. [43] j. dodge, g. ilharco, r. schwartz, a. farhadi, h. hajishirzi and n. smith, "fine-tuning pretrained language models: weight initializations, data orders, and early stopping", arxiv preprint arxiv:2002.06305, 2020. [44] h. touvron, l. martin, k. stone, p. albert, a. almahairi, y. babaei, n. bashlykov et al. "llama 2: open foundation and fine-tuned chat models", arxiv preprint arxiv:2307.09288, 2023. [45] research group on computer vision and artificial intelligence — computer vision and artificial intelligence (https://fki.tic.heia-fr.ch/databases). [46] handwritten line text recognition using deep learning with tensorflow. [online]. available: https://github.com/sushant097/handwritten-line-text-recognition-using-deep-learning-withtensorflow [47] english handwritten line dataset. [online]. available: https://www.kaggle.com/datasets/sushant097/ english-handwritten-line-dataset [48] m. lewis, y. liu, n. goyal, m. ghazvininejad, a. mohamed, o. levy, v. stoyanov and l. zettlemoyer, "bart: denoising sequence-to-sequence pre-training for natural language generation, translation, and comprehension", arxiv preprint arxiv:1910.13461, 2019. https://arxiv.org/search/cs?searchtype=author&query=xu,+y https://arxiv.org/search/cs?searchtype=author&query=li,+m https://arxiv.org/search/cs?searchtype=author&query=cui,+l https://arxiv.org/search/cs?searchtype=author&query=huang,+s https://arxiv.org/search/cs?searchtype=author&query=wei,+f https://arxiv.org/search/cs?searchtype=author&query=zhou,+m https://fki.tic.heia-fr.ch/databases https://fki.tic.heia-fr.ch/databases 714 h. kardanmoghaddam, a. akbarimajd, m. ranjbarpour, m. nooshyar, ... [49] y. liu, m. ott, n. goyal, j. du, m. joshi, d. chen, o. levy, m. lewis, l. zettlemoyer and v. stoyanov, "roberta: a robustly optimized bert pretraining approach", arxiv preprint arxiv:1907.11692, 2019. [50] a. radford, j. wu, r. child, d. luan, d. amodei and i. sutskever. "language models are unsupervised multitask learners" openai blog, vol. 1, no. 8, p. 9, 2019. [51] a. dosovitskiy, l. beyer, a. kolesnikov, d. weissenborn, x. zhai, t. unterthiner, m. dehghani et al., "an image is worth 16x16 words: transformers for image recognition at scale", arxiv preprint arxiv:2010.11929, 2020. [52] y.-m, chae and t. davidson, "large language models for text classification: from zero-shot learning to fine-tuning", socarxiv: 10.31235/osf.io/sthwk, aug. 2023. [53] z. wang, y. pang and y. lin. "large language models are zero-shot text classifiers." arxiv preprint arxiv:2312.01044, 2023. [54] s. zhong, j. zeng, y. yu and b. lin, "clustering algorithms and rag enhancing semi-supervised text classification with large llms", int. j. data sci. anal., vol. 2025, pp. 1-22, 2025. [55] f. dennstaedt, p. windisch, i. filchenko, j. zink, p. m. putora, a. shaheen, r. gaio, n. cihoric, m. wosny, s. aeppli, et al., " application of a general large language model-based classification system to retrieve information about oncological trials ", medrxiv: 10.1159/000546946, 2024. [56] y. guo, a. ovadje, m. a. al-garadi and a. sarker, "evaluating large language models for healthrelated text classification tasks with public social media data", j. am. med. inform. assoc., vol. 31, no. 10, pp. 2181-2189, 2024. [57] m. liu and g. shi, "enhancing llm-based text classification in political science: automatic prompt optimization and dynamic exemplar selection for few-shot learning", arxiv preprint arxiv:2409.01466, 2024. [58] m. m. mohajeri, m. j. dousti and m. n. ahmadabadi, "cocop: enhancing text classification with llm through code completion prompt", arxiv preprint arxiv:2411.08979, 2024. [59] y. zhang, m. wang, q. li, p. tiwari and j. qin, "pushing the limit of llm capacity for text classification", in proceedings of the acm on web conference, 2025, pp. 1524-1528. [60] yin, kai, chengkai liu, ali mostafavi, and xia hu., "crisissense-llm: instruction fine-tuned large language model for multi-label social media text classification in disaster informatics", arxiv preprint arxiv:2406.15477, 2024. [61] f. di palo, p. singhi and b. fadlallah. "performance-guided llm knowledge distillation for efficient text classification at scale", arxiv preprint arxiv:2411.05045, 2024. facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 269 283 doi: 10.2298/fuee1602269m design of iir digital filters with critical monotonic passband amplitude characteristic a case study  dejan mirković, miona andrejević stošović, predrag petković, vančo litovski university of niš, faculty of electronic engineering, serbia abstract. a case study is reported related to the design of iir digital filters exhibiting critical monotonic amplitude characteristic (cmac) in the pass band. this kind of amplitude characteristic offers several advantages as compared to its non-monotonic counterparts, although it has not been studied thoroughly so far, if at all. after giving a short overview of the way of cmacs generation, arguments will be listed in favor of the iir version of the digital filter function realization. next, the iir implementation of the digital filters will be considered in short. the main part of the paper will be devoted to the design sequence of this kind of filters which will be illustrated on the example of a band-pass filter obtained by a set of transformations from an all-pole low-pass analogue prototype. this will be the first time a cmac band-pass iir digital filter is reported. key words: digital filters, iir, monotone amplitude characteristic, all-pole filters 1. introduction the critical monotonic amplitude characteristic (cmac) filters represent an extension of the broad family of filtering functions having all transmission zeroes at infinity [1]. they exhibit distinctive properties such as monotonic amplitude response in the pass band, reduced group delay distortions, higher symmetry of the pulse response, improved mapping of tolerances, improved sensitivity, and high selectivity. the interest for a digital realization of this kind of filtering functions comes from several reasons. first of all, only one sub-class of these functions has already been published in its digital form, the butterworth filters [2]. as shown in [1] and elsewhere, however, practically all sub-classes of cmac functions outperform the butterworth solution in almost every aspect of implementation with the exception of function’s simplicity. this study is a part of our effort to make cmacs more popular and to help bridging the gap between designers and cmac which has deepened during time [3]. second, due to their monotonic behavior, their sensitivity in the passband is reduced and accordingly, they received april 24, 2015; received in revised form august 3, 2015 corresponding author: dejan mirković faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: dejan.mirkovic@elfak.ni.ac.rs) 270 d. mirković, m. andrejević stošović, p. petković, v. litovski offer a good alternative to their non-monotonic counterparts (e.g. chebyshev and least pth [4]). at the same time, this means an improvement in the mapping of the tolerances of the circuit parameters into the tolerances of the attenuation characteristic [5]. finally, they exhibit smaller distortions of the passband group delay which reduces the complexity of the potential phase-corrector to be used to flatten the group delay characteristic [6]. this also means that cmac have smaller asymmetry of the response to a dirac pulse in the time domain which may be of crucial importance for some applications in telecommunication and signal processing. it is our opinion that the advantages of cmac filtering functions have not been completely understood in the research and design community. that especially stands for the iir implementation where no instances of implementation of cmac may be found. the reason for that, in our opinion, is inertia and the need of some additional (mathematical) knowledge for generation of the cmac transfer functions as compared with the chebyshev and butterworth filters. here we try to reopen the subject of cmac design by reporting the results related to the design of band-pass digital iir filter which is the first implementation of band-pass cmac of all. being a designer, one is first to decide either to go for fir filters and start the synthesis of transfer functions for each type of cmac from scratch, or to go for iir filters and transform the existing analog data into the digital domain. in the text below, a short paragraph is devoted to help the decision. as a conclusion, the designer will be advised to go for an iir filter with parallel implementation as the most economical solution in almost every respect. next, one is to create the cmac transfer function and to choose among sub-classes. again, a short paragraph will be devoted to this issue. four main sub-classes of cmac will be described from the implementation point of view. corresponding transfer function generation will be discussed shortly. based on these, a design sequence will be advised for finding the coefficients of the transfer function of iir filters in the z-domain. note that parallel implementation will be recommended and all the calculations will be performed under that presumption. the transformed function will be studied from both stability and accuracy point of view. the procedure will be exemplified on the case of a band-pass iir filter. to get it, a lowpass to band-pass transformation was performed in the analog domain. in that way the analog prototype so obtained was to be transformed into the z-domain by bilinear transformation. the implementation obtained in this way was evaluated by simulation of a filter excited by a complex signal in the time domain. various possible computing technologies were taken into account by changing the number of significant figures for the computations in order to establish the most economical implementation satisfying the design requirements. the paper is organized as follows. in the second paragraph arguments will be given for adopting iir digital filters. in the third paragraph the cmac function will be introduced. then, in the fourth paragraph, the bilinear transform implementation to a parallelized analog transfer function will be given. the case study describing the design (and its verification) of a band-pass cmac filter will be given in the fifth paragraph. 2. properties of the iir digital filters in digital filter design, one is to decide first on the choice between fir and iir filter functions and then to proceed to the approximation problem. then, one is to choose among design of iir digital filters with critical monotonic passband amplitude characteristic 271 different structures exhibiting the same transfer function. in the case of digital filters, the choice is to be done between the canonical (or state variable) and the parallel form. these two are illustrated in fig. 1 for an iir digital filter. it should be noted that if the order of the filter, n, is even, first order cell at the bottom of fig. 1b is omitted, leaving only second order cells in filter realization. when taking the decision between fir and iir filters one has to have in mind several criteria such as complexity of the solution, stability of the system, and processing time. the first criterion may be fragmented into several having the same origin. namely, the complexity of the solution will influence the power consumption, the silicon area and the design effort especially when special techniques are to be implemented for reduction of the power consumption [7]. fig. 1 realization of an nth order iir filter, a) canonical b) parallel (for n odd) note that not all of the criteria are of equal weight in design. for some applications the latency, i.e. the computational time may be of prime importance since it allows for speed. in others, reduction of heating or silicon area may prevail as a main criterion. putting all together, the choice is to be made by taking into account several, if not all criteria. in our detailed study [3] we came to the following. the use of iir filter has the following advantages: 1. lower complexity (in some cases, e.g. [8], incomparably lower); 2. lower dissipation; 3. lower silicon area; 4. available analog prototypes to transform. 272 d. mirković, m. andrejević stošović, p. petković, v. litovski the use of fir filters has the following advantages: 1. lower latency; 2. easier synthesis of linear phase filters; 3. better stability. the use of parallel architecture for the iir filters as shown in fig. 1b however, mitigates all disadvantages (stability, latency) of the iir filters, while there are no methods to do the same for the fir counterparts. it is to note here that getting a linear phase by fir filters doubles the complexity of the solution while using a phase corrector for the iir solution contributes marginally to its complexity [8]. that was the reason why we adopted the parallel architecture and the iir filter structure for the implementation in the cmac design. 3. cmac filters in the s-domain polynomial (or all-pole) filters with critical monotonic amplitude characteristics (cmac) in the passband have been available for several decades now [1]. the main property of cmac is related to the critical monotonicity of the amplitude response in the passband which will be first described here in short. the squared amplitude characteristic may be expressed as 2 2( jω) 1/{1 (ω )}h k  (1) where k(ω 2 ) is the characteristic function. in the simplest form (as proposed in [9]), for n even, one has:            2/ 1 22 2/ 1 222 2222 )ω1( )ωω( ε)(ωε)ω( n i i n i i nlk , (2) where ω is the normalized angular frequency, n is the order of the filter, ε defines the insertion loss at the passband edge, i.e.  2 = 10 amax/10  1, 0 < ωi < 1, i=1,2, ..., ⌊n/2 ⌋ are the abscissa of the inflection points, amax is the maximum allowable attenuation (in db) in the passband, and ⌊ ⌋ denotes the floor function. ln(ω 2 ) is a polynomial with n second order real zeroes located in the interval (1,1). since the characteristic function has a maximum number of inflection points in the passband, so do the amplitude characteristic and the attenuation, the last one being defined as 22(ω ) 10 log(1/ ( jω) ) [db]a h  (3) the main property of cmac leads to a good mapping of the element tolerances into the tolerances of the attenuation. namely, as shown in [4], the tolerance of the attenuation may be expressed in the following form: ω ω    a x x a i i , (4) where xi is the ith parameter of the analog circuit. having a maximal number of inflexion points (where both the first and the second derivatives are equal to zero) of the amplitude design of iir digital filters with critical monotonic passband amplitude characteristic 273 characteristic in the passband, the cmac forces the left-hand side of (4) to go through zero a maximal number of times. note, the derivative of a in (4) does not change its sign if cmac is used since it is monotonic which is different to the non-monotonic functions, e.g. c and ls. filters exhibiting cmac characteristic are also known to have lower group delay distortions in the passband than their c and ls counterparts [10]. altogether, the existence of cmac gives to the filter designer an additional freedom in the choice of the best solution for a filter design problem. there are four main classes of cmac as discussed in [1] and [10]. they originate from the design criteria implemented for synthesis of the transfer function. these criteria are: 1. maximally flat in the origin. the class of filters thus obtained is called butterworth’s after the author [11]. these will be here referred to as b-filters. 2. maximum slope of the characteristic function at the edge of the passband [12] [13] [14]. the name l-filters comes from the fact that for the original derivation legendre polynomials were used. 3. maximum asymptotic attenuation. [15]. here, these will be referred to as h-filters. 4. least-squares-monotonic. in this case, the reflected power in the pass-band was minimized under the critical monotonicity criterion [16] and named lsm filters. a catalog of the coefficients of the transfer functions of all four classes of cmac for n up to 10, obtained by these criteria, was published in [1] where a comparative study was also given. to illustrate this here, fig. 2 depicts the passband attenuation characteristics of the above four classes for n=7. in the next section, before proceeding to cmac digital filter design, the arguments for using iir filters will be discussed in short as based on the comparison of the properties of fir and iir filters. fig. 2 the four main cmac approximants for n=7 4. the bilinear transform and cmac in the z-domain there are several transformations claiming to preserve some of the original properties of the analog filter function when producing a digital domain counterpart. as listed in [17], these methods may be categorized in two groups. in the first group are put the ones which implement a specific criterion of approximation such as: the impulse response 274 d. mirković, m. andrejević stošović, p. petković, v. litovski invariant method; the modified impulse response invariant method; the step response invariant method (or zero order hold); the magnitude-invariance method; and the phase-invariance method. there are, however, transformations based on substitution of the complex frequency in the s-domain by an expression being a function of z. in that way, one has the matchedz transform method, and three methods obtained by approximation of the analog integrator by a digital one. these are known as the backward euler (backward difference); the trapezoidal method or the bilinear transform method, discussed in [18], and the second order formula introduced in [17]. the most popular among all of these is the bilinear transform. its main properties are simplicity of implementation and good preservation of the properties of the amplitude characteristic of the analog filter. it preserves the stability of the analog prototype. it introduces distortions (reduced by increasing the sampling rate) into the phase (group delay) characteristic which, however, has no importance in many applications. it is implemented via the following transformation into the analog transfer function: 1 12    z z t s . (5) where z is the complex digital angular frequency, and t is the sampling rate t=1/fs, fs being the sampling frequency. in that way )( 1 12 )( daa zh z z t hsh          (6) is obtained, where ha stands for the transfer function of the analog filter, while hd stands for that of the digital filter. the procedure of implementation of the bilinear transform to a parallelized analog transfer function together with the stability analysis and numerical considerations were discussed in [3] and we will not repeat them here. instead, in the sequel, we will go for the design of a band-pass filter obtained by low-pass-to-band-pass transformation in the sdomain and then transposed into the z-domain. it is our goal with that design to study all steps that remain to be performed in order to get an implementable design and to analyze the implementation problems related to the limited number of binary digits that arise in real life situations. 5. design, vhdl modeling, and simulation of cmac iir filters the following steps are to be performed in order to get an implementable design of the filter: creation of the band-pass filter in the s-domain; performing the s-to-z transform; conversion the decimal coefficient values into binary; scaling the coefficients to become implementable in fixed point arithmetic; and verification of the design by simulation of the filter hardware. concurrently, based on transfer function evaluation performed after taking into account the finite number of digits used for the representation of the coefficients (after quantization), a final decision will be enabled about the acceptability of the given approximation, i.e. selected number of binary digits. that and scaling are steps of crucial importance for defining the quality of the final solution. design of iir digital filters with critical monotonic passband amplitude characteristic 275 the example filter will be created based on the following requirements: a) band-pass (bp); b) central frequency: f0 = 3 khz; c) bandwidth: fbw = 900 hz; d) sampling frequency: fs = 50 khz e) order of the prototype low-pass filter n=7; f) pass-band amplitude approximation lsm; g) s-to-z transform used: bilinear; h) architecture: parallel combination of transpose direct form ii (tdf ii) filter sections. the well known [19] low-pass to band-pass transform was used: 0 22 0 r 1 ω    bw , (7) where ω is the angular frequency of the prototype filter, while ω is the angular frequency of the band-pass filter. ω0 is the central angular frequency, while bwr=bw/ ω0. bw is the bandwidth of the filter expressed as angular frequency. after the substitution of slp=jω and sbp=jω, (7) becomes a second order algebraic equation with complex coefficients which is usually solved by the geffe algorithm [20]. the new function has fourteen poles obtained by solving (7) as depicted in table 1 (together with the poles of the prototype lp lsm filter), and seven zeroes in the origin. in this case bwr=fbw / f0 =0.3 and ω0=1 rad/s was used. table 1 pole locations of the bp and lp lsm filter in the s-domain band-pass low-pass no. real part imaginary part real part imaginary part 1/2 -0.08266346190 ±0.99657751935 -0.1179475625 ±0.9751626241 3/4 -0.02025317565 ±1.15676424786 -0.3342221750 ±0.7735798237 5/6 -0.01513109310 ±0.86421546064 -0.4935853895 ±0.4252967357 7/8 -0.05591895577 ±1.12151432405 -0.5510897460 0.0 9/10 -0.04434769671 ±0.88944037693 11/12 -0.07876429908 ±1.06309950994 13/14 -0.06931131778 ±0.93551048922 next, the transfer function of the band-pass filter was expressed as a sum of partial fractions to enable parallel realization and, before the bilinear s-to-z transformation was implemented; the poles of the band-pass filter were to be denormalized: every pole coordinate was multiplied by 2π∙f0. based on this the coefficients of the biquads were calculated and s-toz-domain mapping enabled. the resulting coefficients of the biquads in the z domain are given in the first row (entitled full precision) of table 2. this concludes the synthesis procedure. we proceed now with the realization. as the first step, we encounter the necessity to express the coefficient values with a finite number of digits as physical implementation is expected. this process is usually referred to as quantization. only fixed point, two’s complement, biquad’s coefficients representation is considered. fig. 3 shows the transfer function’s pole locations in the z-plane for various binary word lengths used to represent the coefficient values. note that for all cases the poles are confined within the unit circle which confirms our claim that parallel realization will mitigate stability problems in iir realizations. 276 d. mirković, m. andrejević stošović, p. petković, v. litovski fig. 3 z – plane pole location of the bp lsm filter, a) unit circle, b) zoomed poles location. the following notation was used for the quantized version of the filter coefficients, q[n f]. n stands for the number of bits of the whole digital word and f for the number of bits allocated for the digits after the decimal point. accordingly, q[n f] will populate the range (rng) in increments (inc) as follows:     mnfcm  ;1log max2 , (8a) ff n f n incrng 2 1 ; 2 12 , 2 2 11          , (8b) where cmax is the coefficient with maximal absolute value, m is the number of bits allocated for the integer part plus the sign, and f is the number of bits allocated for the fractional part. the symbol ⌈ ⌉ denotes the ceiling function. two operations are performed over coefficients: first, scaling is done with the help of the results of (8a) and appropriate number of bits is determined for integer and fractional part; second, coefficients are quantized, i.e. mapped to appropriate values in range given with (8b) using round to nearest method. decimal and hexadecimal representation of coefficients quantized with q[16 14] are given in second and third row of table 2, respectively. observing table 2, one can see that the coefficient with maximal absolute value is the d1 coefficient of the first section, therefore m = 2, f = 14 are required for 16 bit representation. for these parameters range rng = [−2, 1.99993896484375] is covered in inc = 0.00006103515625 increments. assuming absence of any other source of computational error or noise we calculated the attenuation characteristic of the filter for different quantization formats of the coefficients as discussed above. the results for the example bp lsm filter are depicted in fig. 4. observing fig. 4, one can conclude that variants with 16-bit word length and higher, produce amplitude characteristics that start to agree with the one obtained with full precision. therefore, 16-bits representation can be used if attenuation larger than 50 dbs is not required (observing the lower stop-band in fig. 5). of course, one can use q[24 22] or q[32 30] if more accurate design is required. design of iir digital filters with critical monotonic passband amplitude characteristic 277 table 2 original and quantized filter coefficients numerator f u ll p re ci si o n cell c0 c1 c2 i +0.0033086494281706663 -0.0018617614854014842 -0.0051704109135721505 ii +0.0067062285319410561 +0.0085906290469084413 +0.0018844005149673854 iii -0.044039453119340377 -0.0120564809558326 +0.031982972163507775 iv +0.06277875243767074 0 -0.062778752453249653 v -0.029334088252293972 +0.015384970101239978 +0.044719058353533951 vi -0.006864819539353288 -0.013389525398100878 -0.00652470585874759 vii +0.0074447307119548771 +0.0032630379244648162 -0.0041816927874900617 q [1 6 1 4 ] d ec im al i +0.00329589843750 -0.00189208984375 -0.00518798828125 ii +0.00671386718750 +0.00860595703125 +0.00189208984375 iii -0.04406738281250 -0.01208496093750 +0.03198242187500 iv +0.06280517578125 +0.00000000000000 -0.06280517578125 v -0.02935791015625 +0.01538085937500 +0.04473876953125 vi -0.00683593750000 -0.01336669921875 -0.00653076171875 vii +0.00744628906250 +0.00323486328125 -0.00421142578125 h ex ad ec im al i 0036 ffe1 ffab ii 006e 008d 001f iii fd2e ff3a 020c iv 0405 0000 fbfb v fe1f 00fc 02dd vi ff90 ff25 ff95 vii 007a 0035 ffbb denominator f u ll p re ci si o n cell d1 d2 i -1.886085860514888 +0.98894784642499967 ii -1.8601293281281488 +0.96799935587139696 iii -1.8323004517946606 +0.95057717438073264 iv -1.8083338880121447 +0.94157013740084117 v -1.7935719318070145 +0.94450186279953363 vi -1.7923157567661698 +0.96044412883386077 vii -1.8052459566148433 +0.98552821289667847 q [1 6 1 4 ] d ec im al i -1.88610839843750 +0.98895263671875 ii -1.86010742187500 +0.96801757812500 iii -1.83227539062500 +0.95056152343750 iv -1.80834960937500 +0.94158935546875 v -1.79357910156250 +0.94451904296875 vi -1.79229736328125 +0.96044921875000 vii -1.80523681640625 +0.98553466796875 h ex ad ec im al i 874a 3f4b ii 88f4 3df4 iii 8abc 3cd6 iv 8c44 3c43 v 8d36 3c73 vi 8d4b 3d78 vii 8c77 3f13 after 16-bits representation is adopted, we perform an additional verification, but now in the time domain. fig. 5 depicts the results of time domain simulation using coefficients 278 d. mirković, m. andrejević stošović, p. petković, v. litovski quantized with q[16 14]. both signals and appropriate spectra are presented. the spectra shown in the fig. 5b and 5d are obtained with nfft = 65536 point fft. the input test signal is 0 1 2 3sin(2π ) sin(2π ) sin(2π ) sin(2π )ins f t f t f t f t    , (9) with: f0=3 khz, f1=374.60 hz, f2=749.97 hz, and f3=5999.76 hz. the bandwidth is limited by [fl, fu] = [2583.56, 3483.56] hz. the values of the test frequencies are picked to match integer multiples of fft resolution bin (fs/nfft) in order to minimize spectral leakage in the resulting fft image of the spectrum. a) b) fig. 4 attenuation of the 14 th order lsm band-pass filter: a) pass-band, b) stop-band design of iir digital filters with critical monotonic passband amplitude characteristic 279 observing the spectra in fig. 5b and 5d one can see that after filtering there is only one dominant bin at frequency f0, while the others are filtered out. fig. 5 time domain simulation of the bp filter mathematical model: a) input waveform, b) input spectrum, c) output waveform and d) output spectrum for hardware implementation a versatile vhdl code was written. it combines second and/or first order cells presented in fig. 1b. illustrative schematics of the described second order tdfii and top-level filter cells are shown in fig. 6a and 6b, respectively. appropriate number/position of bits at each signal path is labeled as well. fig. 6 schematic representation of a) second order tdf ii and b) top level filter cell each delay block (z -1 ) is realized as a register. parallel multipliers and ripple carry adders (with add and subtract functions) are designed for multiplication and summing operations, respectively. according to fig. 6a it can be concluded that second order cell requires five multipliers and four adders. on the other hand, assuming zero values for c2,i 280 d. mirković, m. andrejević stošović, p. petković, v. litovski and d2,i coefficients first order cell stems out from second order one. therefore, first order cell will require three multipliers and only two adders. to ensure successful synthesis whole filter is described structurally. each individual block, starting from basic ones, i.e. multipliers, adders and registers up to top level entity is described. therefore, no predesigned structures are assumed making the code as portable as possible. tdf_iii represents first or second order tdf ii cell. din, and dout are input and output digital word. index bounds and constants in fig. 6b are defined as follows,   1-/2 + 2) ,mod(,,0 prri   , (10a)       0 for 1,)max( 0 for ),max( ki ki j , (10b) where i is the index of the filter’s section and j is the number of adders used to sum outputs of the sections. the order of the resulting transfer function is marked with r. it should be emphasized that the order of the resulting band-pass/stop transfer function is doubled compared to low-pass prototype function. symbols ⌊ ⌋, max(x) and mod(x,y) denotes floor function, maximal value, and modulo operator (reminder after x by y division), respectively. parameter p is the flag that detects existence (1-exist, 0-do not exist) of two real poles/residues in resulting band-pass/stop transfer function. if this is the case, two first order sections are generated. finally, k represents direct term of partial fraction expansion of the resulting transfer function. this term is always zero, if the order of the denominator polynomial, m, is less than the order of the numerator polynomial, n. otherwise, this term is of the order m – n. in filter’s transfer functions it can only happen to be m = n which gives k as a simple constant factor. therefore, a branch with the k factor is nothing but a simple buffer stage. possible values for parameters k and p are given in table 3. table 3 possible values for p and k parameters filter type even order odd order p k p k high-pass 0 1 0 1 band-pass 0 0 1 0 band-stop 0 1 1 1 accordingly, vhdl entity accepts generics and has interface ports shown in table 4. vhdl code sample is given below. next, vhdl description was verified by logic simulation with the excitation described in the previous section. it is important to mention that when dealing with hardware implementation two important effects must be examined, namely: saturation and round-off noise. saturation is intensely dependent of the input signal waveform and filter’s architecture and coefficient values. even more, internal states usually saturate with different speeds making the tracking of the saturation process a non trivial task. design of iir digital filters with critical monotonic passband amplitude characteristic 281 table 4 generics and ports of vhdl entity symbol description g en er ic s n word length f number of bits after decimal point r order of resulting transfer function p flag for detecting two real poles/residues k direct term of partial fraction expansion cfs coefficients of the filter p o rt s clk clock signal at sample rate frequency rst reset signal active at negative level x input n bit signal y output n bit signal round-off noise is the direct consequence of a fixed-point representation. simply, product of two n-bit fixed-point numbers is a 2n bit number. this product must eventually be quantized to n-bits by rounding or truncation, which results with the round-off noise. a number of techniques can be used to mitigate this problem [21], [22]. the most commonly used technique to prevent saturation and round-off noise is the dynamic range scaling (or simply scaling) of the input signal prior to filtering action. namely, each input signal value should be scaled down into a specific range which ideally, ensures no saturation in any of the internal and external nodes of the filter. luckily, since two’s complement representation is exploited, saturation of the internal nodes is to be allowed since it will be interpreted as an overflow (wrap-around) effect. e.g. an overflow occurs when the sum of two positive numbers yields a negative result and vice versa, otherwise the result is correct. similar occurrence happens when the internal state values reach boundaries of the dynamic range, i.e. first larger/smaller value, then the maximal/minimal is interpreted as the minimal/maximal value of the range. this can be tolerated as long as the final values of the output signal are valid, i.e. wrap-around does not coincide with the moment of the output signal acquisition. this is where parallel realization, adopted in this work, again outperforms the cascade one. saturation conditions are drastically relaxed when using parallel realization, especially as the order of filter increases. occurrence of wrap-around is reduced as well. this is simply because no matter how large the filter order is, all second and/or first order cells process the input signal independently of each other. therefore, scaling of the input signal applies to all cells at once. the bottleneck is, of course, the output summing node. nevertheless, net sensitivity to saturation is reduced when constrains regarding saturation are relaxed at each individual cell. one may also choose to omit scaling and relay completely on two’s complement representation, but this technique requires sound knowledge about the input signal waveform and algorithm for tracking and handling wrap-around effect. also, all possible cases have to be predicted, therefore extensive simulations are required. this is usually too expensive in the real-world applications, therefore some form of scaling is always applied. moreover, scaling technique is quite easy to implement in the digital domain, knowing that each scaling down/up by two is nothing but the one simple shift right/left operation. accordingly, scaling operation can be implemented as tunable (programmable). even non-linear scaling can be implemented if high accuracy is required. unfortunately, there is no scaling technique which provides closed-form, general solution and it all depends on concrete application at the end of the day. this implies that some exploration of the time domain simulation results is inevitable in the design process to 282 d. mirković, m. andrejević stošović, p. petković, v. litovski determine the appropriate scaling factor. finally, combining several techniques to cope saturation and round-off noise may result with more efficient solution, but scaling with fixed coefficient, because of its simplicity, is still considered suitable for verity of applications and therefore utilized in this design, as well. since our test signal is known in advance, fixed scaling coefficient is to be determined. finding maximum and minimum of the function given in (3), one can determinate the range of the input signal, i.e. rngin = [−3.73, 3.73]. using time domain simulation scaling factor of four turned out to be suitable. this can be also intuitively concluded when looking at the range of filter’s coefficients. namely, dividing rngin with four gives rngnew = [−0.93, 0.93], which is smaller than half of the filter’s coefficient range rng = [−2, 1.99993896484375], leaving enough headroom for values of internal states to spread without reaching saturation. after filtering, output is scaled up and the obtained results are presented in fig. 7. fig. 7 time domain simulation of the bp filter vhdl model: a) output waveform, b) output spectrum sound representation of signal’s spectrum using fft usually requires a large number of samples. this inevitably leads to longer time domain simulation. to minimize duration of the time domain logic simulation, a smaller number of fft points, compared with a case with purely mathematical model which simulates faster (fig. 5b, 5d), is desired. therefore, nfft = 16384 is chosen for representing the output signal spectrum in fig 7b. it turns out that this number gives a satisfactory compromise between simulation time and fft accuracy. finally, comparing fig. 7a with fig. 5c and fig. 7b with fig. 5d, one can see that the time and frequency domains of the output signal obtained by simulating mathematical and hardware models of the filter match. this proves that hardware representation successfully implements the desired behavior of the designed filter. 6. conclusion with this case study we intended to fulfill two main goals. first, we wanted to raise the awareness of the salient advantages of the cmac filtering functions as compared with their non-monotonic counterparts. to achieve this, we gave a short overview of the properties of cmac amplitude characteristics. the second goal was to give, for the first time, design results characterizing the amplitude characteristic of band-pass iir digital filters. accordingly, we went through several steps. first, we gave arguments on the choice of iir filters. then, we gave arguments for the parallel implementation of digital design of iir digital filters with critical monotonic passband amplitude characteristic 283 filters that was used throughout the design process. next, we described and exemplified the complete design procedure including the verification steps needed to support the design decisions taken on the way. all that was performed on the example of a band-pass cmac iir digital filter, a solution that was here reported for the very first time. acknowledgement: this research was funded by the ministry of education, science and technological development of republic of serbia under contract no. tr32004. references [1] d. topisirović, v. litovski, and m. andrejević stošović, “unified theory and state-variable implementation of critical-monotonic all-pole filters,” international journal of circuit theory and applications, vol. 43, no. 4, pp. 502–515, 2015. [2] jf. kaiser, digital filters, in: ff. kuo, jf. kaiser (eds.) system analysis by digital computer. wiley: new york, 1996, chapter 7, p. 245. [3] d. mirković, m. andrejević stošović, p. petković and v. litovski, “iir digital filters with critical monotonic pass-band amplitude characteristic,” aeu international journal of electronics and communications, vol. 69, no. 10, pp. 1495-1505, oct. 2015, issn 1434-8411. [4] ds. humpherys, the analysis, design, and synthesis of electrical filters, prentice-hall, 1970 [5] k. geher, theory of network tolerances, akademiai kiadó: budapest, hungary, 1971. [6] v. litovski, “synthesis of monotonic passband sharp cutoff filters with constant group delay response,” circuits and systems, ieee transactions on, vol. 26, no. 8, pp. 597–602, aug 1979. [7] rabey j. low power design essentials. springer science + business media, llc: new york, 2009. [8] mf. quélhas, a. petraglia, mr. petraglia, “efficient group delay equalization of discrete-time iir filters,” in proceedings of the xii european signal processing conference, eusipco-2004, vol. 1, vienna, austria, 2004, pp. 125-128. [9] rabrenović d, jovanović v. low-pass filters with critical monotonic magnitude. publications of faculty of electrical engineering, eta series: belgrade, 1973, pp. 59–68. [10] b. d. rakovich, “designing monotonic low-pass filters – comparison of some methods and criteria,” international journal of circuit theory and applications, vol. 2, no. 3, pp. 215–221, 1974. [11] s. butterworth, “on the theory of filter amplifiers,” experimental wireless and the wireless engineer, vol. 7, 1930, pp. 536-541. [12] a. papoulis, “optimum filters with monotonic response,” in proceedings of the ire, vol. 46, no. 3, pp. 606–609, 1958. [13] a. papoulis, “on monotonic response filters,” proceedings of the ire, vol. 47, pp. 332–333, 1959. [14] m. fukada, “optimum filters of even orders with monotonic response,” circuit theory, ire transactions on, vol. 6, no. 3, pp. 277–281, 1959. [15] p. halpern, “optimum monotonic low-pass filters,” circuit theory, ieee transactions on, vol. 16, no. 2, pp. 240–242, may 1969. [16] b. rakovich and v. litovski, “least-squares monotonic lowpass filters with sharp cutoff,” electronics letters, vol. 9, no. 4, pp. 75–76, february 1973. [17] d. mirković, p. petković, and v. litovski, “a second order s-to-z transform and its implementation to iir filter design,” compel the international journal for computation and mathematics in electrical and electronic engineering, vol. 33, no. 5, pp. 1831–1843, 2014. [18] w. park, k.-s. park, and h.-m. koh, “active control of large structures using a bilinear pole-shifting transform with h∞ control method,” engineering structures, vol. 30, no. 11, pp. 3336–3344, 2008. [19] h. orchard and g. c. temes, “filter design using transformed variables,” circuit theory, ieee transactions on, vol. 15, no. 4, pp. 385–408, 1968. [20] p. geffe, “designers guide to active bandpass filters,” part iii’, edn, vol. 19, no. 7, 1974. [21] k. k. parhi, scaling and round-off noise in: vlsi digital signal processing systems: design and implementation. john wiley & sons, 2007, chapter 11. [22] k. prasad and p. sathyanarayana, “signal scaling in cascade digital filters,” circuits, systems and signal processing, vol. 8, no. 4, pp. 421–426, 1989. instruction facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 357 365 doi: 10.2298/fuee1603357k an architectural design for cloud of things abhirup khanna b.tech cse with specialization in cloud computing and virtualization technology university of petroleum and energy studies (upes) dehradun, uttarakhand, india abstract. in recent times the world has seen an exponential rise in the number of devices connected to the internet. this widespread expansion of the internet and growth in the number of interconnected devices has lead to the rise of many new age technologies. internet of things (iot) being one of them allows devices to communicate with one another that are connected through the internet. it provides a new way of looking towards pervasive computing wherein "things" be it sensors, embedded devices, actuators or humans interact with one another. but currently iot is facing a number of challenges related to scalability, interoperability, storage capacity, processing power and security which all act as a deterrent for its practical implementation. cloud computing, the buzzword of the it industry, suits best to handle all these challenges, thus leading towards the integration of cloud and iot. in this paper, we present a layered architecture for cloud of things, i.e. the amalgamation of cloud computing and internet of things. the architecture provides a scalable approach for iot as it allows dynamic addition of nnumber of "things". moreover, the architecture allows the end users to host their applications onto the cloud and access iot systems remotely. towards the end, the paper discusses a use case that proves the correctness of the proposed architecture. key words: cloud of things, internet of things, cloud computing, ubiquitous computing 1. introduction in present day times internet has become a key aspect in everyone's life. from shopping malls to banks, from e-health to military equipments, internet has made its mark. with the advancement of the internet more and more people are able to connect among themselves located at distant places throughout the globe. this outburst of the internet has given birth to a new idea of having every object connected to one another. soon the number of things connected to the internet would surpass the number of people living on earth. according to an estimate given by cisco, 50 billion devices would be connected through the internet by the year 2020. the future will have things communicating to one received june 30, 2015; received in revised form november 12, 2015 corresponding author: abhirup khanna university of petroleum and energy studies (upes), bidholi, via prem nagar, dehradun, uttarakhand 248007, india (e-mail: abhirupkhanna@yahoo.com) 358 a. khanna another rather than humans; in fact they would be talking on behalf of humans [1]. this rise in the outreach of the internet is gradually leading towards an era of internet of things (iot). wherein the objects (things) connected to the internet would be sharing information with other objects as well as with humans. new ways of communication would evolve allowing humans and things to communicate with one another. iot can be seen as a revolution in the field of computer science and would play a vital role in shaping the future of computing. the term internet of things was introduced way back in the year 1999 by kevin ashton. at that time many people thought it to be just an analogy for m2m communication but they never realized how big iot can become. it is true that the concept of iot follows the principles of m2m communication, but it cannot be considered as an analogy for it [2]. m2m communication finds its application in the late 1960s and early 1970s. it was a term used by the telecom industry to denote point to point communication. m2m communication was merely connecting embedded devices to one another through cellular or wired networks. whereas on the other hand internet of things is far more than this, having an ip based networking model along with the integration of sensors and embedded devices. iot allows various kinds of heterogeneous devices to connect to one another, collect data, exchange information and depict this information onto the real world with the help of actuators. iot facilitates the use of wireless sensor networks (wsn) in order to collect information from sensors present at remote locations. the wsn comprises of an n number of self powered sensing nodes connected through a wireless network. these nodes detect events, gather information and transmit this information to their base stations. to be precise, iot is not just about embedded devices connected to one another, rather, it consists of a large set of actors that lead to its proper functioning. talking of the actors that constitute the entire system of internet of things include: sensors, embedded devices (things), sensor networks, actuators and humans. sensors gather data that is transmitted to embedded devices through sensor networks. things process this data, generate information and exchange this information with one another or even humans. specific actions are performed by the actuators or humans in accordance to the processed information. talking of iot there is always a mention of data that is either being exchanged or processed or being depicted in the physical world. with the increase in number of "things" the data being exchanged or processed by them will also increase leading to an outburst of unstructured heterogeneous data. present day embedded devices lack the capabilities to store and process this humongous amount of data thus heading towards the integration of cloud computing and internet of things [3]. cloud computing needs no introduction as it is one of the big time game changers in the field of computer science. nowadays, a lot is heard about cloud computing and how it is being implemented in every walk of life. cloud computing is a next gen computing model that allows users to have access to resources on a pay as you use basis. cloud is constructed on the foundation of virtualization thus allowing its users to access unlimited amount of resources from remote locations. dynamic resource allocation, platforms to host heterogeneous services and applications, virtualization of resources, unlimited storage and processing capabilities is what makes cloud the buzz word of the it industry. the integration of cloud computing and iot will give rise to a new computing paradigm having benefits of both iot and cloud. this new paradigm can be addressed as cloud of things (cot), wherein cloud acts an architectural design for cloud of things 359 as a central control and processing unit and things are the real world entities which collect data and represent information in the form of suitable actions. but in order to make cot a reality there is an urgent need for an architecture that could depict its internal and external working. the architecture would define various actors along with their functionalities required to constrict an ecosystem for cot. the aim of this paper is to present such kind of an architecture that represents the amalgamation of cloud and iot. in this paper we propose a layered architecture for cot that leverages the capabilities of cloud and explores the outreach of internet of things. the rest of the paper is organized as follows. section 2 talks about the challenges of iot and the benefits of its integration with cloud. section 3 discusses some of the architectures for internet of things. in section 4 we have the proposed architecture for cloud of things. in section 5 there is a use case to validate the proposed architecture. finally, section 6 provides a conclusion for the paper. 2. challenges for cloud in iot till now we have discussed the benefits of iot and how its implementation could ease the way of living. but there are several challenges which we come across towards the implementation of iot and its potential to become the future of computing [4]. below are some of the prominent challenges which need to be addressed before implementing iot. 1) interoperability: it is said that iot is based on diversity and not interoperability but it is essential for an iot driven system to foster both technical as well as semantic interoperability [5]. every system working on the guidelines of iot should allow various kinds of heterogeneous devices to connect to one another. devices should be allowed to communicate among themselves irrespective of the operating system running on it or its hardware configuration. semantic interoperability also needs to be harnessed so that every device has a correct and similar interpretation of the exchanged information. 2) data access and control: data sharing is an essential part of iot. it would be beneficial for all if various organizations could come up and share their data in order to gain useful insights. thus who can access and control this data is a big question as data ownership still remains a concern for iot. 3) security and privacy: data integrity and privacy is a major concern for iot as most of the data exchanged comprises of users personal information. issues such as protecting users' privacy and manufacturers' ip; detecting and blocking malicious activity come under security threats pertaining to iot [6]. implementation of energy efficient data encryption schemes along with maintaining a proper authentication mechanism is a challenge for iot. 4) storage capacity: embedded devices used in iot lack the storage capabilities that are needed to store huge volumes of data collected from various sensors. their inability to store large amounts of data makes the system inefficient and leads to creation of incomplete data sets. 5) processing power: things involved in iot lack processing capabilities and thus are unable to process huge volumes of data. this lack of processing power leads to half baked information which when depicted lead to actions that are incorrect. 360 a. khanna 6) power consumption: the devices being used under internet of things, be it sensors or actuators, require power to run. new research needs to be done in promoting the use of low power devises that consume less battery life and can run for years. 7) reliability: iot systems need to be reliable in order to meet the industry standards. any single point of failure in the system should not hamper the working of the entire system. the system needs to be flexible, robust and fault tolerant in nature [7]. 8) scalability: one major question related to internet of things is how big it can become? or to put it this way, how far is iot scalable? [8] there are very limited systems or architectures that fully explore the scalability of iot. a lot of work needs to be done in designing systems for iot that facilitate dynamic increase and decrease of things. after going through all the above mentioned challenges cloud seems to be the best solution for all of them. integration of cloud with iot will allow iot systems to have access to unlimited storage and processing capabilities along with efficient security mechanisms. amalgamation with cloud will provide flexibility, scalability and robustness to the entire system. cloud will also be acting as a platform where service providers could host there services and monitor the working of the entire system. for end users cloud would act as an interface from which they can interact and communicate with their devices. the fusion of iot and cloud will also act beneficially for cloud providers as they will be able to enhance the reach of their services to the real world entities in a more dynamic and distributed manner. 3. related work since the outburst of iot, many architectures have been proposed in order to implement it in a practical scenario. similarly, many such frameworks have been proposed that exhibit fusion of cloud and iot. in this section, we have presented some of the research works pertaining to this area.  diat stands for distributed internet-like architecture for things. it is a layered architecture for iot that works on the principles of service oriented architecture (soa) and ensures minimum human involvement [9]. the architecture comprises of three layers, namely, virtual object layer (vol), composite virtual object layer (cvop) and service layer. all three layers are clubbed together along with their functionalities into a stack call iot daemon. this is the very daemon that forms the core of the entire architecture. talking of the different layers the vol acts like an interface between the real and physical world and is responsible for virtual representation of objects. the work of the cvop is to ensure communication and interaction between virtual objects present at the vol. last comes the service layer whose work is to manage and monitor all kinds of various services. it can also initiate service creation on its own in order to make the entire system automated.  marm also known as multi agent based rfid middleware is software that is built on the principles of agent oriented software engineering [10]. it also incurs a layered architecture having three layers for device management, data management and user interface. there is another architecture proposed in [11] that makes use of an architectural design for cloud of things 361 a cell based structure in order to ease the traffic congestion between rfid readers and tags.  next is an architecture which talks about the integration of cloud and iot. cloudthings is an architecture that aims at the integration of cloud computing and iot and interacts with all the three delivery models (iaas, paass, saas) of cloud [12]. the purpose of the architecture is to enhance the experience of application development and management through the use of cloud computing.  when dealing with internet of things mobile devices play a major role. with the advancements in the smartphone technology mobile devices ought to be the perfect match for what we call a "thing" in iot. mosden focuses at this aspect and provides a middleware between a mobile device and iot [13]. the middleware makes use of mobile devices as sensing units and transmit the sensed data to the backend systems. thus the work of the developer is made easy by allowing it to code at the backend rather than on the mobile device itself.  thin clients have always been used to propagate the principles of ubiquitous computing and now they are being implemented in designing systems for iot. the architecture proposed in [14] makes use of thin clients as thin servers which act as an interface for low level devices such as sensors and actuators. the architecture deploys communication protocols such as coap and http to facilitate communication between various applications and devices. the apps and thin servers make use of restful api calls to interact with the low end devices. the application model of the architecture works similar to web mashups and enables developers with the facility to reuse their code in designing new services. for discovery of new nodes the architecture takes help of meta data such as rfid tags, names, geospatial information, etc. 4. proposed architecture a scalable and robust architecture is required to ensure proper working and implementation of a cot based ecosystem. the architecture must cope with the never ending requirements of the end user along with tackling the challenges mentioned in section 2. constructing architecture is the first step towards a solution. in this section we propose architecture for cloud of things which would act as a blue print for the technology and describe various components that constitute it. below is the detailed description of a layered architecture along with its various actors pertaining to cloud of things. sensing layer: this layer comprises of the various kinds of sensors present in the system. the work of the sensors is to gather information and transmit it to the subsequent network layer. sensors act as the eyes and ears for the system and detect events and transmit the collected information. every sensor can be categorized on the basis of three parameters namely, sensor type, methodology and sensing parameters. sensor type defines which type of sensor it is, i.e. whether it is a homogeneous or a heterogeneous sensor or if it is a single dimensional or multidimensional sensor. methodology tells about the ways in which the sensor gathers information. it can be either active or passive. active sensing means direct collection of data, i.e. from an mri, while passive sensing is inferring data (blood pressure) from the data collected by active sensing. sensing parameters are the number of parameters which a sensor is able to sense. a sensor might 362 a. khanna just sense one parameter like body temperature or many parameters like in the case of ecg. the sensing layer may also comprise of rfid readers which gather information from rfid tags. these rfid tags can store large amounts of information and can be easily tagged on any object be it an animal, consumer product or a human being. fig. 1 layered architecture for cloud of things communication layer: it is also known as the network layer. the purpose of this layer is to maintain communication among various sensors, things and humans. the three broad categories of communication that take place are:  sensor to thing.  thing to thing.  human to thing. it is the communication layer which receives information from the sensing layer and forwards it to the control layer. the network layer comprises of two gateways which act as collection points to combine information collected from various sensors and rfid readers. these gateways combine all forms of unstructured information and transmit it to the subsequent control layer. the communication layer makes use of several networks in order to maintain interaction at various levels. wsn or wireless sensor networks form the core of the network layer. in case of wsn, sensors are connected through a wireless network and transmit information to their respective hosts through wireless communication. another type of sensor network which the network layer uses is the body sensor network (bsn). it consists of sensing nodes that are implanted inside or outside a patient's body. the work of the sensing nodes is to monitor and sense physiological parameters of a patient like its blood pressure and body temperature. the communication layer may also comprise of nsg, i.e. net generation networks which is a combination of body sensor networks and social networks. the communication layer works on the ip an architectural design for cloud of things 363 based networking model and provides a unique ip address to every node (sensor, thing, human) connected through the system. as the number of nodes in a system increase at an exponential rate, keeping this in mind the communication layer implements the ipv6 addressing scheme to map every node. control layer: it is the most important layer of the entire architecture. it is the control layer which derives useful insights by performing computations over the data received from the communication layer. in technical terms, the control layer can be considered the cloud layer as it is where all the data is stored and processed. the control layer is also known as the service layer as it provides a platform for service providers to host their services. it also acts like a web portal for end users to add, delete and monitor their devices (things and sensors). any device can become a part of the system by registering itself. after successful registration every device is allotted a unique id and password. the id is usually the ip address of that device and password is for secure authentication. once the device is added its entry is made in the cloud data base. it is the scalable and robust nature of cloud that facilitates dynamic addition and subtraction of nodes. the control layer receives data from the communication layer and stores it in the data bases. it then applies certain algorithms and performs the n number of computations on the stored data in order to find interesting patterns. the computations performed on the data are in accordance to the service to which it belongs. the results after processing are reverted back to the end user and are either depicted by the actuators or represented in the form of useful information (knowledge). actuation layer: the purpose of this layer is to represent information received from the control layer. it is the actuators which receive and represent useful insights coming from the control layer into the physical world. the actuation layer comprises of robotic arms, led screens, motors, pulleys, etc. the process of actuation can either be manual or automatic. in case of manual actuation, human intervention is involved and results are depicted by humans based upon the suggestions given by the control layer; whereas in automatic actuation the actuators work on their own in accordance with the information received from the control layer. 5. proof of concept over the past few years internet based technologies have found their way in numerous health care applications. with the advancements in sensor technologies iot is able to find its use in several medical applications [15]. iot aims at easing the life of people and it does the same when dealing with patients. iot based systems are able to provide convenience to both patients and doctors by offering services such as real time monitoring of the patient, health management, emergency management and patients information management. in order to prove the proposed architecture we created a test bed for it. the use case used in here is of a health care monitoring system. the system would be monitoring the physiological parameters of a patient on a real time basis and take suitable actions if the values of a parameter go out of range. the system will also be monitoring the geospatial location of the patient with the help of a gps sensor. below is the working of the health care monitoring system. 364 a. khanna  the system would be monitoring three physiological parameters, namely, blood pressure, body temperature, and pulse rate of a patient. sensors used for this purpose are pressure sensor, temperature sensor and a pulse sensor.  all the sensors are connected to an arduino board. the board is also connected to a 2.4" tft lcd screen in order to display suitable information.  the raw data is collected from the sensors and transmitted to an application running on cloud. data is transferred using the internet protocol. the application would be storing data onto the cloud data base and would be comparing whether the parameters lay in normal rage or not.  if any of the parameters go beyond its normal range the application would communicate with the arduino board.  the arduino board will take suitable actions such as display the name of a prescribed medicine or transmit the coordinates of the patient to the application by communicating with the gps sensor.  once the application has received the geospatial coordinates it can easily book an appointment with the doctor for a house visit or call the ambulance to that specific location. 6. conclusion since the last decade, internet has drastically changed as well as the needs of its users. with the growing popularity of the internet the number of users accessing it has also increased. in this paper, we propose an architecture for cloud of things which is an amalgamation of cloud computing and internet of things. cot is a new age technology that copes with the ever increasing size of the internet as well as to the never ending requirements of the end users. the proposed architecture talks about the various actors along with their functionalities that are required to setup a cloud integrated iot system. upcoming technologies such as fog computing or cloudlets will be more appropriate for iot rather than cloud, thus leading researchers are to explore new avenues related to them. in the future, people from different walks of life can make use of this architecture to implement a cot system in a practical scenario. references [1] m. gomes, r. da rosa righi, c. da costa, “internet of things scalability: analyzing the bottlenecks and proposing alternatives”, in proceedings of the ieee 6th international congress on ultra modern telecommunications and control systems and workshops (icumt), 2014, pp. 269-276. [2] c. doukas, l. capra, f. antonelli, e. jaupaj, a. tamilin, i. carreras, “providing generic support for iot and m2m for mobile devices”. in proceedings of the ieee rivf international conference on computing & communication technologies-research, innovation, and vision for the future (rivf), 2015, pp. 192-197. [3] s. w. kum, j. moon, t. lim, j. i. park, “a novel design of iot cloud delegate framework to harmonize cloud-scale iot services”, in proceedings of the ieee international conference on consumer electronics (icce), 2015, pp. 247-248. [4] v. gazis, m. goertz, m. huber, a. leonardi, k. mathioudakis, a. wiesmaier, f. zeiger, short paper: “iot: challenges, projects, architectures”, in proceedings of the 18th international conference on intelligence in next generation networks (icin), 2015, pp. 145-147. an architectural design for cloud of things 365 [5] o. vermesan, p. friess, internet of things-global technological and societal trends from smart environments and spaces to green ict, 2011, river publishers. [6] r. h. weber, “internet of things–new security and privacy challenges” computer law & security review, vol. 26, no. 1, pp. 23-30, 2010. [7] h. d. ma, “internet of things: objectives and scientific challenges”, journal of computer science and technology, vol. 26, no. 6, pp. 919-924, 2011. [8] d. miorandi, s. sicari, f. de pellegrini, i. chlamtac, “internet of things: vision, applications and research challenges”, ad hoc networks, vol. 10, no. 7, pp. 1497-1516. 2012. [9] c. sarkar, a. uttama nambi sn, r. prasad, a. rahim, r. neisse, g. baldini, diat: a scalable distributed architecture for iot, 2012. [10] l. v. massawe, f. aghdasi, j. kinyua, “the development of a multi-agent based middleware for rfid asset management system using the passi methodology”, in proceedings of the sixth international conference on information technology: new generations, 2009. itng'09. pp. 1042-1048. [11] a. solanas, j. domingo-ferrer, a. martínez-ballesté, v. daza, “a distributed architecture for scalable private rfid tag identification” computer networks, vol. 51, no. 9, pp. 2268-2279, 2007. [12] j. zhou, t. leppanen, e. harjula, m. ylianttila, t. ojala, c. yu, l. t. yang, “cloudthings: a common architecture for integrating the internet of things with cloud computing”, in proceedings of the ieee 17th international conference on computer supported cooperative work in design (cscwd), 2013, pp. 651-657. [13] c. perera, p. p. jayaraman, a. zaslavsky, d. georgakopoulos, p. christen, “mosden: an internet of things middleware for resource constrained mobile devices” in proceedings of the 47th hawaii international conference on system sciences (hicss), 2014, pp. 1053-1062. [14] m. kovatsch, s. mayer, b. ostermaier, b. “moving application logic from the firmware to the cloud: towards the thin server architecture for the internet of things”, in proceedings of the sixth international conference on innovative mobile and internet services in ubiquitous computing (imis), 2012, pp. 751-756. [15] j. choi, m. ha, j. im, j. byun, k. kwon, w. yoon, d. kim, “the patient-centric mobile healthcare system enhancing sensor connectivity and data interoperability”, in proceedings of the international conference on recent advances in internet of things (riot), 2015, pp. 1-6. 10614 facta universitatis series: electronics and energetics vol. 35, no 4, december 2022, pp. 571-585 https://doi.org/10.2298/fuee2204571s © 2022 by university of niš, serbia | creative commons license: cc by-nc-n original scientific paper fast doa estimation of the signal received by textile wearable antenna array based on ann model* zoran stanković, olivera pronić-rančić, nebojša dončov university of niš, faculty of electronic engineering, niš, serbia abstract. mlp_doa module, being an integral part of the smart twaa doa subsystem, intended for fast doa estimation is proposed. multilayer perceptron network is used to create the mlp_doa module that provides a radio gateway location in azimuthal plane at its output when a spatial correlation matrix, found by receiving the radio gateway signal using two-element textile wearable antenna array, is on its input. mlp_doa network training with monitoring the generalization capabilities on the validation set of samples is applied. the accuracy of the proposed modeling approach is compared to the classical approach in mlp_doa module training previously developed by the authors. comparison of the presented ann model with the root music algorithm in terms of accuracy and program execution time is also done. key words: ann, mlp, doa, twaa, root music 1. introduction wearable wireless systems play an integral role in the fifth generation (5g) networks, which operate with higher bit rates, lower latency, and lower outage probabilities in smaller microcells and picocells covering broader areas than 4g or older technologies. in addition, beam reconfigurability and beamforming are expected to facilitate spectral and energy efficiency at both the mobile devices and base station levels. besides mobile communications, wearable wireless systems find numerous applications in areas such as health-care, security, ambient assisted leaving, sports etc., [2]-[7]. wearable antennas are among the most important elements of wearable wireless systems, [8]-[15]. they are usually integrated within the clothing by any of current stateof-the-art fabrication methods (fabric-based embroidered antennas, polymer-embedded antennas, microfluidic antennas with injection alloys, inkjet printing, screen printing and photolithography, 3d-printed antennas, etc.) [9]. depending on the type of application, it received march 24, 2022; revised may 15, 2022; accepted june 5, 2022 corresponding author: zoran stanković university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia e-mail: zoran.stankovic@elfak.ni.ac.rs * an earlier version of this paper was presented at the 15th international conference on advanced technologies, systems and services in telecommunications (telsiks 2021), october 20 22, 2021, in niš, serbia [1] 572 z. stanković, o. pronić-rančić, n. dončov is vital to choose a suitable antenna form, as one-design-fits-all approach often does not meet all requirements. in health care monitoring (hcm), wireless technology enables a significant reduction in the cost of health services, while at the same time providing the necessary quality of service. combination of biosensors placed on patient’s body and antennas integrated into garments to transmit/receive signals to the remote wireless monitor point can allow the patients to receive the needed assistance, while continuing to live in their own homes [15]. a single textile wearable antenna with an omnidirectional radiation pattern is commonly used in health care monitoring systems. it allows to avoid signal level fluctuations between the antenna and a radio gateway (rg) of the hcm system due to wearer movements. however, the range of the single antenna is significantly reduced both outdoors and indoors due to its small gain. the classic antenna arrays provide significantly higher gain but have narrow and spatially invariant radiation patterns and therefore cannot overcome the problem of signal fluctuations due to the movement of antenna wearer. textile wearable antenna arrays (twaa) with adaptive beamforming (smart twaa), on the other hand, provide that the main lobe of the antenna array radiation pattern is always directed towards the rg [15]. direction-of-arrival (doa) estimation of rg signal represents a crucial factor in adaptive beamforming [16]. usually, doa estimation requires intensive matrix calculations аs it is based on super resolution algorithms such as music, esprit, and their modifications. therefore, their real-time implementation requires powerful hardware platforms, [17-20], which makes them unsuitable for implementation on small mobile platforms used to realise smart twaa. on the other hand, artificial neural networks (anns) for doa estimation do not require complex matrix calculations and can be easily implemented on modest mobile hardware platforms, [21]-[26]. further, from our previous research, it was shown that they have approximately the same modelling accuracy as super resolution algorithms, but significantly higher calculation speed [1], [24]-[26]. this paper is a continuation of the research presented in [1] where the basic version of the doa module based on the multilayer perceptron (mlp) network (mlp_doa module) was proposed. that module is an integral part of the smart twaa doa subsystem with two textile antennas that performs fast doa estimation of the rg signals and determination of the rg location in the azimuthal plane. the research conducted within this paper relates to further development and improvement of the mlp_doa module as well as to the examination of its performances in a working environment having a wide range of signal-to-noise ratio changes. unlike the classical approach in mlp_doa module training, applied in [1], that did not include mechanisms of control of the achieved generalization capabilities of mlp network, in this paper, network training with monitoring the generalization capabilities on the validation set of samples and thus preventing the effect of its overlearning is applied. the proposed ann approach in doa estimation of the rg signal is compared with the classical approach in doa estimation based on the root music algorithm in terms of accuracy and program execution time. the paper is organized as follows. after introduction, a brief description of the proposed smart twaa doa subsystem is given in section 2. the architecture, training, and testing of mlp_doa network are presented in section 3. the most illustrative numerical results are presented in section 4, and finally conclusion remarks are given in section 5. fast doa estimation of the signal received by textile wearable antenna array based on ann model 573 in order to facilitate interpretation of the material presented in these sections, the list of used acronyms is given in table 1. table 1 list of used acronyms a term replaced by its acronym (acronym) health care monitoring (hcm) mean square error (mse) radio gateway (rg) maximum validation failures (mvf) textile wearable antenna arrays (twaa) worst case error (wce) direction-of-arrival (doa) average test error (ate) artificial neural networks (anns) pearson product moment correlation coefficient (rppm) multilayer perceptron (mlp) signal-to-noise ratio (snr) 2. smart twaa doa subsystem architecture of the smart twaa doa subsystem is shown in fig. 1. it consists of two-element twaa, narrowband filters, a/d convertors, fpga module and doa module. the distance between the antenna elements is d = c/2f, where c is the speed of light. twaa, filters and a/d convertors perform the rg signal sampling at frequency f. based on the samples provided by twaa, fpga module calculates the spatial correlation matrix (c). this matrix is then sent to the input of doa module that determines the azimuth positions of the radio gateway (). anns are proposed for the realization of the doa module (ann based doa module). fig. 1 architecture of the smart twaa doa subsystem [1] in the absence of the antenna noise, the vector of signals induced on twaa with elements having omnidirectional radiation pattern in the azimuth plane is xs(t) = [xs1(t) xs2(t)], where xs1(t) and xs2(t) are the signals induced on the first and second antenna element, respectively. accordingly, the correlation matrix of signals induced on elements can be expressed as [16] 574 z. stanković, o. pronić-rančić, n. dončov sin h sin [ ( ) ( )] j d h s s s j d p pe e t t p pe p     −  = = =     c x x ss (1) where e [] denotes expectation operator, s = [1 ejdsin]t is the steering vector,  is the phase constant ( =2π/λ), and p is the power of the signal induced on one omnidirectional antenna element. in the initial state, when the twaa wearer does not move and the textile is not deformed, the gains of antenna elements are mutually equal, g()=g1()=g2(). in the general case, the twaa wearer moves, the textile deformations occur and consequently there are changes in the orientation of the antenna elements and in their effective apertures. therefore, the gains of antenna elements in the direction of the rg change over time and in general case, they can have different values at the same moment 1 1 2 2( , ) ( , ), for most valuesg g t g g t t =  = (2) here, we assume that creasing of textile does not lead to a significant change in the distance between the antenna elements, i.e., this change can be neglected. therefore, the equation (1), defining the correlation matrix of the signals received by the mobile twaa, must be modified as follows         = − pgpegg peggpg dj dj s 2 sin 21 sin 211   c . (3) when the antenna noise is present and there is not any external rg signal, the noise vector induced on the antenna elements can be represented as n(t) = [n1(t) n2(t)], where n1(t) and n2(t) are random noise components on the first and second antenna element, respectively. for uncorrelated noise, e.g., white gaussian noise, the noise correlation matrix is obtained as 2 h 2 0 [ ( ) ( )] 0 n n n e t t     = =     c n n . (4) the spatial correlation matrix at the twaa output, c, can be obtained as a superposition of the correlation matrix of signals and the noise correlation matrix, h 2 sin 1 1 2 sin 2 1 2 2 [ ( ) ( )] j d n s n j d n e t t g p g g pe g g pe g p       − = =  + = + =   +   c x x c c (5) where x(t) = xs(t)+n(t) is the vector at the twaa output. the signal-to-noise ratio (snr) is defined with respect to the power of the signal received by the first element of the antenna array, 2 1 n pg snr  = . (6) fast doa estimation of the signal received by textile wearable antenna array based on ann model 575 therefore, equation (5) can be expressed as follows             + + = − snr pg pgpegg pegg snr pg pg dj dj 1 2 sin 21 sin 21 1 1   c . (7) normalization of the matrix c does not lead to a change in the results obtained by music algorithm for doa estimation, [25]. by normalizing the matrix c with respect to element c11, it is obtained that normalized matrix, c, is invariant to the signal strength p and for its determination is not necessary to know the gains of both antennas but only their relative ratio g2/g1,                       + ++  +  = − snrg g snr snr e snr snr g g e snr snr g g dj dj 1 11 1 1 1 2sin 1 2 sin 1 2   c (8) with the introduction of the variables: g (root gain ratio), 12 ggg = , and the distance between antenna elements expressed in wavelengths, d, eq. (8) becomes                   + ++  +  = − snr g snr snr e snr snr g e snr snr g dj dj 1 11 1 1 2sin2 sin2     c (9) in the real scenario, the twaa wearer moves, and the textile is crumpled, so it is exceedingly difficult to determine the parameters g and snr at each time point. also, the angle  is unknown, so the spatial correlation matrix cannot be determined directly by applying the above formula. the spatial correlation matrix is estimated from a large number of twaa output samples in a short time interval (twaa snapshots) using fast a/d converters and calculating the matrix elements on the fpga module using the approximate formula  =  sn s h ss sn 1 1 xxc , (10) where xs is the sample of s-th snapshot at twaa output and ns is the number of snapshots. an example of a measuring point and the necessary laboratory equipment for obtaining the elements of a correlation matrix by measurement are presented in [26]. 3. ann based doa module the ann based doa module consists of a single mlp neural network (mlp_doa) that estimates the angle of arrival of the rg signal on the twaa based on the signal information contained in the spatial correlation matrix. this can be represented as follows 576 z. stanković, o. pronić-rančić, n. dončov _ ( )mlp doaf = c . (11) the first row of a normalized spatial correlation matrix without autocorrelation element is sufficient for estimating the angular positions of em radiation sources, [1], [25]. the real and the imaginary part of the elements in the first row without the autocorrelation element, are brought separately to the neurons in the input layer of the mlp network. in this way, a model is obtained that is more suitable for implementation and training in relation to the case when the complex values of these elements are taken at the input of the mlp network, [23]. accordingly, for the two-element twaa, eq. (11) can be written in the form _ _ 12 12( ) (re{ }, im{c })mlp doa mlp doaf f c  = =c , (12) where c is the vector of the input variables of the mlp neural network (c = [re{c12՛} im{c12՛}].) 3.1. architecture of mlp_doa network the architecture of mlp_doa network is shown in fig. 2. it consists of a total of l layers of neurons: one input and one output layer of neurons and a total of l-2 hidden layers of neurons between them. fig. 2 architecture of mlp_doa network. the signal propagation from the input to the output of the mlp network and the corresponding transfer functions of the mlp_doa network (eq. 12) can be described by the output vectors of each network layer. the input layer is a buffer layer and, according to eq. (12), has two neurons. thus, the output vector of the input layer is y1 = c = [re{c12՛} im{c12՛}]. the output vector of l-th layer (except the input layer) can be expressed as fast doa estimation of the signal received by textile wearable antenna array based on ann model 577 llf lll l l ,,3,2)( 1 =+= − bywy (13) where yl-1 represents the output of (l-1)-th layer. in eq. (13), wl is the connection weight matrix between the (l-1)-th and the l-th layer where matrix element wl i,j represents the connection weight between the j-th neuron of the (l-1)-th layer and the i-th neuron of the l-th layer, bl is the vector containing biases of the l-th layer where vector element bi l represents bias of the i-th neuron of the l-th layer, while fl() is an activation function of l-th layer neurons. the hyperbolic tangent sigmoid transfer function was used as an activation function of hidden layers 1,...,3,2,)( −= + − = − − ll ee ee uf uu uu l . (14) the output layer has one neuron with the linear activation function fl(u) = u and its output is given as llllll l l f bywbywy +=+== −− 11 )( . (15) the weight matrices w1, w2,…, wl, and bias vectors b1, b2,…, bl form the set w of the trainable parameters of the mlp network. the values of the elements of this set are adjusted during the network training with the aim that the mapping expressed by eq.(12) is realized with the desired accuracy. the general architecture of this mlp_doa neural network is represented by the notation mlph-n1-…-ni-…-nh. h and ni in this notation are the total number of hidden layers in mlp architecture (h = l-2) and the total number of neurons in the i-th hidden layer, respectively. 3.2. training and testing of mlp_doa network mlp_doa network training is performed on a set of training samples p = {(c1,1 d), (c2,2 d),..., (cs,s d),...,(cnp,np d)}, where s d is the desired value of the network output when the sample cs is brought to its input and np is the total number of training samples. to monitor the achieved degree of the network generalization, the validation set v, containing the total number of nv samples of the same format as the samples of the training set p, is applied. during the network training, the samples from the training set are brought to the network input and an iterative change of weights and biases from the set w is performed in accordance with the chosen training algorithm. the goal is to minimize the mean square error (mse) of the network output relative to the desired output values. regarding the observation of network performance at the training set, the network training is stopped either when the target mse at the training set (eptarget) is reached or if the maximum number of iterations, nimax, is reached. during the network training, the mse of the network output at the validation set, ev(w), is also monitored and when its minimum value (evmin) is reached, the training is stopped, even if the above conditions for termination of the network training are not met. in fact, when evmin is achieved, any further training of the mlp_doa network leads to the network overfitting and deterioration of its generalization abilities. in other words, this means that the problem of finding the optimal breakpoint of the neural network training comes down to 578 z. stanković, o. pronić-rančić, n. dončov finding the values of network weights and biases from the set w for which the network will have a minimum mean square error at the validation set (eq. 16). v 2 min 1 1 ( ) min ( ) 2 n d v s s w sv e w n   =   = −     (16) if during the iterative training of the mlp_doa network is noticed that the error at the validation set after a period of continuous decline begins to grow in the next mvf (maximum validation failures) successive iterations, then it is considered that the minimum error has been reached and the training should be stopped. the mvf value is set before the start of the network training. in the example of mlp_doa network training that is presented in this paper, a test set intended for checking the generalization performance of the trained network was used as a validation set in the network training process (v=t). each sample used for neural network training or testing was obtained by establishing an inverse doa mapping according to eq. (9) and averaging a large number of consecutive twaa snapshots according to eq. (10). the training and test set of the samples contain ordered triplets of the format (re{c12( d [], g [db], snr [db])}, im{c12(d [], g [db], snr [db])},  d []), where the samples are generated for different values of the angle  d and the parameter g. the mlp_doa network training set is generated by a uniform distribution of the variables  d and g as ( ) 12 12 max max (re{ ( , , )}, im{ ( , , )}, }) | [ : : ], [ : : ] d d d snr d d d d min step min step c g snr c g snr p g g g g            =       (17) where  d min,  d step and  d max are the minimum value, step, and the maximum value of the angle  d, respectively, and gmin, gstep and gmax are the minimum value, step, and the maximum value of the parameter g in the training set, respectively. in order to assess the quality of network training, the quality of generalization of the trained network and the final choice of mlp_doa network architecture to be used for the implementation of doa module, each trained network was tested on a test set that does not contain samples used in the training process. similar to the training set, the test set was generated by a uniform distribution of the variables  d and g as 12 12( ) (re{ ( , , )}, im{ ( , , )}, ) | [ : : ], [ : : ] step step d d d snr d dt dt dt dt dt dt min max min max c g snr c g snr t g g g g            =       (18) where  dt min,  dt step and  dt max are the minimum value, step, and the maximum value of the angle  d in the test set, respectively, and g t min, g t step and g t max are the minimum value, step, and the maximum value of the parameter g in the test set, respectively. the following metrics were used in the neural network testing process: worst case error (wce), average test error (ate) and pearson product moment (ppm) correlation coefficient (rppm), [22]. worst case error is calculated as 1 max min ( , ) max t dn s s d ds w wce    = − = − c , (19) fast doa estimation of the signal received by textile wearable antenna array based on ann model 579 where nt is the total number of test set samples,  (cs,w) is the output of mlp_doa network when the sample cs is brought to its input, and  d max and  d min are the maximum and minimum desired values of angle  in test set, respectively. average test error is calculated as 1 max min ( , )1 t dn s s d d st w ate n    = − = −  c . (20) ppm correlation coefficient is calculated as 1 2 2 1 1 ( ( , ) ) ( ) ( ( , ) ) ( ) t t t n d d s s ppm s n n d d s s s s w r w         = = = −  − =     −  −           c c , (21) where 1 1 ( , ) tn s st w n   = =  c represents the average value of neural network output and  = = tn s d s t d n 1 1  represents the average value of expected output values. 4. modeling results simulation of twaa doa subsystem operation, generation of training and testing samples, as well as development and testing of mlp_doa modules were performed in matlab environment. the reference computer configuration used to implement doa module and for all simulations was: intel core i7-9700f cpu @ 3 ghz, with 16 gb ram. the following modeling scenario was considered: rg has radiation power of 1 w (0 dbw) and its distance from twaa is 100m. twaa wearer moves in the azimuth plane and its positions in relation to the rg change from -60° to +60°. as the wearer moves, textile creases, and the root gain ratio changes from -10 to 10 db. the antenna elements are at a constant distance d=0.5 and the number of snapshots is ns=300. for the development and testing of mlp_doa module, training and test sets are formed using the eqs. (17) and (18). the training set, p(20), is formed for snr = 20 db and test sets are formed for the following signal to noise ratio values: snr{20 db, 15 db, 10 db, 5 db, 0 db, -5 db} (denoted as t(20), t(15 ), t(10), t(5), t(0), t(-5)). the following parameter values in the eq. (17) were used to generate the training set: min = -60, step = 0.5,max = 60, gmin = -10 db, gstep = 1db and gmax = 10 db. in this way, a training set containing 5061 samples was generated. the following parameter values in the eq. (18) were used to generate the test set:  t min = -60,  t step = 0.7,  t max = 60, gt min = -10 db, gt step = 1.3 db, and gt max = 10 db. in this way, 2752 samples were generated for each test set. the development phase of the doa module includes training and testing of a number of different mlp_doa networks as well as selection of mlp network with the best test characteristics for the implementation of the doa module. during this phase, it is 580 z. stanković, o. pronić-rančić, n. dončov assumed that the antenna environment is almost ideal in terms of noise, the signal to noise ratio is snr=20 db. therefore, the sets p(20) and t(20) were used to train and test different mlp_doa networks. for the implementation of the mlp_doa module, mlp architectures with two hidden layers (h = 2) and a variable number of neurons in them were considered. a number of different mlp networks having n1 ≤ 8 neurons and n2 ≤ 22 neurons were trained and tested. levenberg – marquardt algorithm [22] was chosen to train mlp_doa networks by tracking the achieved degree of network generalization at the validation set. during the training of the mlp_doa networks, t(20) test set was used as a validation set. the following values of training parameters were selected: eptarget = 10-6, nimax = 1000 and mvf = 20. testing of all trained mlp_doa networks was performed with the t(20) test set. worst case error (wce), average test error (ate) and correlation coefficient (rppm) were monitored during the test procedure in order to find the mlp_doa network capable of providing the angle of arrival of rg signal on the twaa with the best accuracy. eight mlp_doa networks that have the best test statistics are shown in table 2. it can be seen that mlp2-18-16 neural network has the lowest values of wce and ate and the highest value of rppm. therefore, this neural network was chosen for the implementation of the mlp_doa module. the test statistics obtained by the presented modelling approach are significantly better than the corresponding ones presented in [1] where the selected mlp_doa module (mlp2-10-5) had the following statistics: wce=2.7949, ate=0.3699 and rppm=0.9998546. namely, it is shown that approach in training and selection of the appropriate mlp network architecture for the realisation of mlp_doa module presented here, significantly improves the accuracy of doa estimation compared to the classical approach in mlp_doa module training presented in [1]. the scattering diagram of the selected mlp2-18-16 neural network is shown in fig. 3. in this case, a very high accuracy of doa estimation can be observed. since the mlp network of mlp_doa module was trained and tested in almost ideal noise conditions (snr=20 db), it was necessary to test the mlp_doa module in case of an environment with increased noise in order to investigate the impact of noise on its accuracy. therefore, the mlp_doa module was tested in a noisy environment with a snr of 15 db, 10 db, 5 db, 0 db, and -5 db using t(15 ), t(10), t(5), t(0), and t(-5) test sets, respectively. in order to compare the accuracy of the proposed ann approach in doa estimation of the rg signals with the classical approach based on super-resolution algorithms, the implementation of doa module with the root music algorithm was performed (root music doa module). testing of the root music doa module was performed under the same conditions and with the same test sets as in the case of the mlp_doa module. table 2 testing results for mlp_anns with the best test statistics mlp_doa network wce (%) ate (%) r ppm mlp2-18-16 0.3466 0.0344 0.9999993 mlp2-14-11 0.3479 0.0432 0.9999980 mlp2-12-12 0.3735 0.0495 0.9999975 mlp2-15-11 0.3971 0.0596 0.9999964 mlp2-17-11 0.4368 0.0627 0.9999958 mlp2-22-10 0.4685 0.0488 0.9999974 mlp2-14-12 0.4837 0.0439 0.9999978 mlp2-14-11 0.5366 0.0571 0.9999965 fast doa estimation of the signal received by textile wearable antenna array based on ann model 581 fig. 3 scattering diagram of mlp2-18-16 neural network (snr = 20 db) based on the test results, the accuracy of both modules was examined and compared for different snr values. the values of the worst case errors, average test errors and correlation coefficients obtained by the mlp_doa module and by the root music doa module versus signal-to-noise ratio are shown in fig. 4 6. it is evident that both modules have very high accuracy in the case of low noise environment (snr=20 db, 15 db, 10 db). with increasing noise, i.e., decreasing snr, there is a decrease in the accuracy of both modules, which becomes significant for snr values less than 5 db. however, in the case of increased noise, the proposed mlp_doa module achieves better results. fig. 4 worst case error versus snr obtained by mlp_doa module and by the root music doa module 582 z. stanković, o. pronić-rančić, n. dončov fig. 5 average test errors versus snr obtained by mlp_doa module and by the root music doa module fig. 6 ppm correlation coefficient obtained by mlp_doa module and by the root music doa module the scattering diagram of both modules in case of extremely high noise, snr = -5db, are shown in figs. 7 and 8. fig. 7 shows the scattering diagram of the mlp_doa module. in this case, the following test statistics were obtained: wce=79.9515, ate=5.5533 and rppm=0.9175. fig. 8 shows the scattering diagram of root music doa module. in this case, the following test statistics were obtained: wce=116.0627, ace=6.5200 and rppm=0.8376. comparing the scattering diagrams of both modules, similar conclusions can be drawn as in the previous case. both modules show significant deviation of the output values from the referent (desired) ones for a large number of samples, however, the scattering in the case of the mlp_doa module is less than the scattering of the root music module, therefore, the mlp_doa module shows less accuracy reduction in conditions of intense noise than the root music module. fast doa estimation of the signal received by textile wearable antenna array based on ann model 583 fig. 7 scattering diagram obtained by the mlp_doa module in conditions with high noise level (snr = -5 db, solid line line of ideal value matching, dashed lines boundaries of the scattering area) in addition, the average program execution time, measured on the test set with 2752 samples, for the mlp_doa module is 0.008054 seconds and for the root music doa module is 0.366337 seconds (table 3). obviously, the mlp based doa module performs doa estimation significantly faster compared to the root music doa module (approximately 45 times faster). fig. 8 scattering diagram obtained by the root music doa module in conditions with high noise level (snr = -5 db, solid line line of ideal value matching, dashed lines boundaries of the scattering area) 584 z. stanković, o. pronić-rančić, n. dončov table 3 comparison of doa estimation speed of the mlp_doa module and the root music module measured on test set (intel core i7-9700f cpu @ 3 ghz, 16 gb ram) doa module run time @ 2752 samples (s) mlp_doa module 0.008054 root music doa module 0.366337 5. conclusion an improved mlp_doa module for fast doa estimation of the rg signal arrival angle on two-element textile wearable antenna array has been proposed. the multilayer perceptron network, which was used to create this module, learned to accurately determine the position of the radio gateway in the azimuth plane from the spatial correlation matrix obtained by sampling the rg signal at twaa. since the classical approach in mlp_doa module training, did not include mechanisms to control the achieved generalization capabilities of the mlp network, in this paper the training of mlp network was performed by monitoring the generalization capabilities on the validation set of samples. the obtained mlp_doa module has an extremely high accuracy of doa estimation in low noise conditions, i.e., better modelling accuracy was achieved compared to the results obtained by the classical approach in the training of the mlp_doa module. in addition, the proposed module was compared with the root music algorithm in terms of accuracy and execution time of the program. the selected mlp_doa module was shown to have approximately the same accuracy as the root music doa module in the case of low noise conditions and less degradation of the model accuracy in a very noisy environment. besides, mlp_doa module performs doa estimation approximately 45 times faster compared to the root music doa module. creasing of textiles can cause the center frequencies of the antenna elements of twaa to shift, as well as change the distance between the antenna elements. this leads to the effect of changing the phase difference of the signals received by the antennas regardless of the change in the angular position of the rg. this effect limits the accuracy of the mlp_doa module. therefore, further research will be aimed at increasing the accuracy of the mlp_doa module by developing the methods to reduce this effect. one of the methods that will be applied is the training of mlp_doa network with the samples of rg signals emitted at two different frequencies. also, during further research, mlp_doa module for twaa with more than two antenna elements will be developed. acknowledgement: this work was supported by the ministry of education, science and technological development of republic of serbia (grant no. 451-03-9/2021-14/200102). fast doa estimation of the signal received by textile wearable antenna array based on ann model 585 references [1] z. stanković, o. pronić-rančić and n. dončov, "ann based doa estimation of the signal received by two-element textile wearable antenna array", in proceedings of the 15th international conference on advanced technologies, systems and services in telecommunications (telsiks), 2021, pp. 86-91. [2] cisco white paper, "cisco visual networking index: global mobile data traffic forecast update, 20162021 white paper", march 2017. [3] z. lin et al., "a low-power, wireless, real-time, wearable healthcare system", in proceedings of the ieee mtt-s international wireless symposium (iws), 2016, pp. 1-4. [4] t. liang and y. j. yuan, "wearable medical monitoring systems based on wireless networks: a review," ieee sensors j., vol. 16, no. 23, pp. 8186-8199, dec. 2016. [5] c. lin et al., "wireless and wearable eeg system for evaluating driver vigilance", ieee trans. biomed. circuits syst., vol. 8, no. 2, pp. 165-176, april 2014. [6] v. misra et al., "flexible technologies for self-powered wearable health and environmental sensing", proc. ieee, vol. 103, no. 4, pp. 665-681, april 2015. [7] s. saponara, "wearable biometric performance measurement system for combat sports", ieee trans. instrum. meas., vol. 66, no. 10, pp. 2545-2555, oct. 2017. [8] n. f. m. aun, p. j. soh, a. a. al-hadi, m. f. jamlos, g. a. e. vandenbosch and d. schreurs, "revolutionizing wearables for 5g: 5g technologies: recent developments and future perspectives for wearable devices and antennas", ieee microw. mag., vol. 18, no. 3, pp. 108-124, 2017. [9] b. mohamadzade, r. m. hashmi, r. b. v. b. simorangkir, r. gharaei, s. ur rehman and q. h. abbasi, "recent advances on fabrication methods for flexible antennas in wearable devices: state of the art", sensors, vol. 19, no. 10, p. 2312, 2019. [10] a. sabban, "small new wearable metamaterials antennas for iot, medical and 5g applications", in proceedings of the 14th european conference on antennas and propagation (eucap), 2020, pp. 1-5. [11] h. lee, j. tak and j. choi, "wearable antenna integrated into military berets for indoor/outdoor positioning system", ieee antennas wirel. propag. lett., vol. 16, pp. 1919-1922, 2017. [12] s. m. saeed, c. a. balanis, c. r. birtcher, a. c. durgun and h. n. shaman, "wearable flexible reconfigurable antenna integrated with artificial magnetic conductor", ieee antennas wirel. propag. lett., vol. 16, pp. 2396-2399, 2017. [13] s. su and y. hsieh, "integrated metal-frame antenna for smartwatch wearable device", ieee trans. antennas propag., vol. 63, no. 7, pp. 3301-3305, july 2015. [14] m. virili, h. rogier, f. alimenti, p. mezzanotte and l. roselli, "wearable textile antenna magnetically coupled to flexible active electronic circuits", ieee antennas wirel. propag. lett., vol. 13, pp. 209-212, 2014. [15] p. j. soh et al., "a smart wearable textile array system for biomedical telemetry applications", ieee trans. microw. theory techn., vol. 61, no. 5, pp. 2253-2261, may 2013. [16] l. c. godara, "application of antenna arrays to mobile communications, ii: beamforming and direction-ofarrival considerations", proc. ieee, vol. 85, pp. 1195-1245, 1997. [17] m. i. miller, and d. r. fuhrmann, "maximum likelihood narrow-band direction finding and the em algorithm", ieee trans. acoust., speech signal processing, vol. 38, no. 9, pp. 1560-1577, 1990. [18] r. schmidt, "multiple emitter location and signal parameter estimation", ieee trans. antennas propag., vol. 34, no. 3, pp. 276-280, 1986. [19] r. roy and t. kailath, "esprit-estimation of signal parameters via rotational invariance techniques", ieee trans. acoust., speech signal process, vol. 37, no. 9, pp. 984-995, 1989. [20] v. v. reddy, m. mubeen and b. poh ng, "reduced-complexity super-resolution doa estimation with unknown number of sources". ieee signal process. lett., vol. 22, no. 6, pp. 772-776, 2015. [21] s. haykin, neural networks, new york, ieee press, 1994. [22] q. j. zhang and k. c. gupta, neural networks for rf and microwave design, boston, artech house, 2000. [23] a. hirose, complex-valued neural networks: advances and applications, wiley, 2013. [24] z. stanković, n. s. dončov, i. milovanović and b. milovanović, "1d doa estimation of mobile stochastic em sources with a high level of correlation using mlp-based neural model", electromagnetics, vol. 38, no. 8, pp. 500-516, 2018. [25] z. stanković, n. dončov, i. milovanović, b. d. milovanović, "doa estimation of mobile stochastic em sources with variable radiation powers using hierarchical neural model", int. j. rf microwave computer-aided eng., vol. 29, no. 10, p. e21901, pp. 1-17, 2019. [26] m. agatonović, z. stanković, i. milovanovic, n. s. dončov, l. sit, t. zwick, b. d. milovanović, "efficient neural network approach for 2d doa estimation based on antenna array measurements", prog. electromagn. res., pier 137, vol. 137, pp. 741-758, 2013. 13136 facta universitatis series: electronics and energetics vol. 38, no 2, june 2025, pp. 305 336 https://doi.org/10.2298/fuee2502305m © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper comparative investigation of visible to swir lasers for terrestrial fso link analysis under various meteorological circumstances shibabrata mukherjee1, bidrohi bhattacharjee2, pradip kumar sadhu2, heranmoy maity3 1jadavpur university, kolkata, west bengal, india 2department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand-826004, india. 3pailan college of management & technology, kolkata, india orcid ids: shibabrata mukherjee https://orcid.org/0000-0002-9561-5504 bidrohi bhattacharjee https://orcid.org/0000-0001-7622-8034 pradip kumar sadhu https://orcid.org/0000-0001-8104-5232 heranmoy maity https://orcid.org/0000-0002-8305-4818 abstract. this paper compares coherent optical sources operating in the visible to short wavelength infrared (swir) spectral bands at various wavelengths, such as lasers operating in longer-range terrestrial free space optical links under varying atmospheric circumstances. for the link range of five kilometers, different laser sources have been taken into consideration in this comparison research. for instance, two visible wavelengths (532 nm, 640 nm), two near infrared wavelengths (nir) (808 nm, 980 nm), and one short wavelength infrared (swir) (1550 nm) have all been discussed. additional characteristics include a 100 mhz data transmission frequency and return to zero on-off keying (rzook) modulation technique. fog, rain, snow, turbulence, and other atmospheric phenomena have a significant impact on the terrestrial fso link. thus, in order to retain dependable connection performance and recover the conveniently supplied information in inclement weather, transmitted optical power is a crucial requirement. other parameters like optical power attenuation, signal to noise ratio (snr), bit error rate (ber), etc. have been analyzed at the receiver end using proper optics for each wavelength at a distance of 5 km in various adverse atmospheric conditions. from the link analysis computation, it has been revealed that the link margin for 1550 nm, 980 nm, 808 nm, 640 nm, and 532 nm lasers are about 63.1 db, 60.6 db, 59 db, 57 db, and 56 db respectively for 5 km link range at adverse atmospheric scenario. key words: adverse atmospheric conditions, link margin, optical power attenuation, optical wireless communication, swir; visibility, terrestrial fso link received november 27, 2024; revised december 3, 2024, january 11, 2025, february 1, 2025, and february 11, 2025; accepted february 16, 2025 corresponding author: bidrohi bhattacharjee department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand-826004, india e-mail: onlybidrohi@gmail.com https://orcid.org/0000-0002-9561-5504 https://orcid.org/0000-0001-7622-8034 https://orcid.org/0000-0001-8104-5232 https://orcid.org/0000-0002-8305-4818 306 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity 1. introduction in modern times, lasers are effectively used for a variety of tasks, including welding, surgery, holography, range finding, optical communication, etc. one of the key uses for nextgeneration communication networks is free space optical communication. the fso communication system is becoming more and more popular because to its long-range operation, fast data rate, immunity to electromagnetic interference, high level of security, and lack of need for underground fibre cables or spectrum licenses [1]. in a terrestrial free space optical communication system, message signals or information can be transmitted through an unguided channel using different wavelength coherent optical sources between two points. this unguided channel can be established in different mediums like atmosphere, underwater, combination of free space and under water and space (inter-satellite), but in this article terrestrial free space communication link is the main concern. because the functioning of this sort of system is heavily dependent on the weather, installation of this type of system in any place or region requires a thorough investigation of the local meteorological conditions. for installation of this type of system in any location or area, the proper survey of the weather condition for that particular location or area is required because the performance of this system is very much weather dependent. since the weather varies depending on the location, the system's ability to work successfully at a given distance depends on the computation of sent and received power. in both favorable and unfavorable weather circumstances, the system's ability to maintain an appropriate signal to noise ratio (snr), minimal bit error rate (ber), and minimum received power at a given distance is crucial. in addition, another crucial factor in the terrestrial fso communication system is connection distance, or data bandwidth. for visible light communication, visible wavelengths between 400 and 700 nm are often utilized. terrestrial fso systems employ wavelengths in the near infrared (780nm–1400nm) and shortwave infrared (1400 nm–3000 nm), among other ranges. the predominant spectral wavelength range for this kind of long-distance terrestrial communication system, when it comes to swir wavelengths, is 1530 nm–1560 nm [2][3][4]. when compared to 1550 nm laser sources, visible wavelength and near-infrared laser sources are often less expensive [5][6]. as free space optical communication technology has different attractive features, the local area network (lan), metropolitan area network (man), and wide area network (wan) connections may be established using fso. as a result, in different countries, many researchers are involved in this field of research and some of their works have been reported in this section. some of the articles are focused on comparative studies of different wavelength laser sources in different environmental conditions like fog, rain, etc. and attenuation of the sources has been reported. in this regard, three optical wavelengths—850, 950, and 1550 nm—with a link distance of one kilometer and three primary atmospheric conditions—fog, rain, and humidity—have been taken into consideration in [7]. here, an optical source operating at 1550 nm has reached 10-6 ber at a link range of 0.95 km, whereas optical sources operating at 850 nm and 950 nm have achieved the same ber at 0.84 km and 0.86 km, respectively, of same link distance. two optical wavelengths, 850 nm and 1550 nm, are compared in another article [8] with a varied connection distance ranging from 0.2 km to 1.6 km and corresponding differences in visibility from 0.2 km to 1.2 km. from this article, it has been understood that 850 nm optical source provides the 9.49 db and 1550 nm optical source provides the 14.87 db link margin at a link distance of 1.6 km and visibility 1.2 km respectively. in [9], three wavelengths like 850 nm, 1310 nm & 1550 nm, with a link range of 0.5 km and atmospheric attenuation of 70 db/km were considered. at the receiver end it has comparative investigation of visible to swir lasers for terrestrial fso link 307 been found that those three optical sources gave -40.8880 dbm, -40.9990 dbm, -40.7786 dbm signal power respectively. a 1550 nm laser was employed for experiments in [10], and a 100 mbps data throughput was taken into consideration when using the rz encoding approach. the laser's maximum power of 5 mw is taken into consideration, and its diameter is 3 mm. temperature and wind speed are the two categories of meteorological parameters that have been taken into account for the link reliability study. different wind speeds have been established, with a maximum speed of 15 km/h being taken into consideration. when it comes to temperature, 5000 c is thought to be the maximum average temperature. it is evident from the experiment's outcome that when temperature and wind speed increased, the q factor also dropped. as a result, in both scenarios—the rising temperature and wind speed scenario— ber performance has deteriorated. another investigation, conducted in [11], using a laser source with a wavelength of 1550 nm and a data speed of 10 mbps. the ook modulation approach was taken into consideration. a 0.5 x 0.5 x 5 m3 rain chamber has been introduced in this experiment. for this experiment, a maximum rain rate of 210 mm/hr was taken into consideration. based on the least square mean equation method, the estimated values of α and k are 0.91 and 0.63, respectively. the discovery aids in power margin reporting and enhances system performance while implementing an optical link in regions with heavier precipitation. the optical power attenuation increased along with the rain rate, which led to deteriorate in the ber value. another investigation with an 850 nm wavelength laser source and 10 mbps data transmission was conducted in [12]. two sorts of elements have been introduced in this experiment: single input multiple output (simo) and aperture averaging. the two previously mentioned methods were implemented in order to enhance the system. in deteriorating atmospheric (rainy) circumstances, the simo technique outperformed the aperture averaging technique. a hybrid fso-rf system has been introduced in [13]. this system has been exposed to three different kinds of meteorological anomalies: fog, rain, and snow. maximum fog visibility was 1.5 km, maximum rain rate was 250 mm/hr, and maximum snowfall rate was 10 mm/hr. according to the testing results, data was communicated over the fso link with an effective fso transmission range of up to 1 km during the wet season and up to half a km during fog and snow events for a favourable ber value. another investigation with an 850 nm wavelength laser source and 10 mbps data transmission was conducted in [14]. direct intensity modulation (d-im), pulse width modulation (pwm), subcarrier intensity modulated frequency shift keying (sim-fsk), subcarrier intensity modulated amplitude modulation (sim-am), subcarrier intensity modulated phase modulation (sim-pm), and subcarrier intensity modulated frequency modulation (sim-fm) are some of the modulation schemes that have been introduced in this study. pwm and sim-fsk perform better in more precipitation. a ro-vlc system with a 25 mbps data throughput was introduced in [15]. three wavelengths of leds—650 nm, 530 nm, and 450 nm—have been employed in this investigation for communication. for this work, two encoding methods—rz and nrz— have been taken into consideration. when compared to the rz encoding approach, the rz encoding technique yields better ber values. a 40 gbps fso communication system that is affordable has been demonstrated in [16]. the study has taken into account wavelengths between 1550 and 1553 nm, with a link distance ranging from 100 to 2000 m. this communication system introduced the edfa amplifier. in various visibility circumstances (from bad to clear), the link dependability has been improved with the use of this amplifier. a 10 x 100 gbps mdm-wdm terrestrial fso communication system was proposed in [17]. the system incorporates a dual polarization-quadrature phase shift keying (dp-qpsk) modulation technology. the wavelengths ranged from 1550 nm to 308 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity 1554 nm, and the link distance was evaluated between 1.2 and 20 km. 850 nm and 851 nm wavelength lasers have been taken into consideration in a low-cost, high-speed rofso communication system that was proposed in [18]. to transmit four 10 ghz channels, wdm and mdm techniques are combined. in clear weather conditions, all channels have successfully communicated data at a link range of 1200 m. in low, medium, and intense fog situations, on the other hand, data may be transferred with a link range of 570 m, 500 m, and 440 m, respectively, while maintaining a bit error rate of 10-3. a mode division multiplexing (fso) system with a 20 mbps data transmission speed was introduced in [19] for healthcare infrastructure. in a clear weather situation, the data was successfully delivered over a 27 kilometer link distance. the identical system has been examined under low, medium, and strong fog (visibility) circumstances. under strong foggy, condition, the performance has deteriorated. in [20], an 850 nm wavelength has been used to depict a hybrid division multiplexing (mdm) and polarization division multiplexing (pdm) based ro-fso system. various meteorological conditions have been used to test the aforementioned link. according to the simulation's outcome, 3400 meters might be reached as the link distance in a clear weather scenario, with a ber of 10-3 that is acceptable. however, due to attenuation, the suggested mdm-pdm-ro-fso link could only tolerate up to 1000 m when the weather changed to partial haze/rain. furthermore, the suggested link could only endure up to 650 meters with an acceptable bit-rate error (ber) when the meteorological state changed from partial haze/rain to dense fog/heavy rain. this section includes certain particular geographic regions and meteorological data collected during testing to improve the findings' dependability. a fso-based experimental investigation using an 808 nm laser source was carried out in changchun, jilin, china in [21]. this experiment has taken into consideration the ook modulation approach at speeds of 100 mbps and 500 mbps across a 6.2 kilometre link distance. it has been assessed how much of an impact scintillation has on the fso link for a whole day. this study found that for both of the studied data rates, the ber values increased when the scintillation index increased over 0.2. similarly, another fso-based work that was presented in saudi arabia may be found in [22]. this experiment has examined the fso system's optical power attenuation in a dusty situation. a 90 × 40 × 40 cm3 artificial dust box and a laser source with a wavelength of 1520 nm were taken into consideration for this experiment. this study indicates that dust attenuation of light is approximately seven times that of fog attenuation. in qatar, another fso experimental study has been conducted [23]. this experimental effort has taken into consideration a 1550 nm laser source operating at 1 gbps data speed over a 600 m connection distance. in this experiment, the performance of the packet delivery ratio (pdr) has been measured in several seasons, such as winter, summer, spring, etc., with varying levels of scintillation throughout the day. this study indicates that pdr performance is higher in the winter than in the summer. with the aid of theoretical and simulation models, feasibility studies for free space optical (fso) communication for the city of bhubaneswar are described in [24]. the last five years' worth of visibility, precipitation, and wind speed data for bhubaneswar are used to compute the atmospheric losses. the outcome indicates that the highest fso distance that can be achieved for bhubaneswar in poor visibility conditions is 633.5 meters when the loss is 28 db. in clear weather, however, an fso connection distance of 1558 meters was obtained with a loss of 16.7 db. in [25], a software simulation-based work has been carried out in lahore, pakistan. from this study, it has been shown that the lowest visibility of dust was 2.6187 km & the highest visibility was 5.2936 km in that place, as a comparative investigation of visible to swir lasers for terrestrial fso link 309 result, the attenuation was 8.1236 db & 4.8256 db respectively. the maximum rain rate of 150 mm/hr and the related attenuation of 30 db/km were taken into consideration. the highest allowed transmitted laser power is 20 dbm, and for link distances up to 2 km, the allowable attenuations for dust and rain rate are 8.1 db/km and 11.59 db/km, respectively. in [26], an experiment in milan, italy, revealed that the greatest attenuation caused by snowfall was 21 db, and that it occasionally exceeded 45 db/km, leading to connection failure. a work based on simulation has been done in [27]. the wintertime fog in delhi, india has been taken into consideration in this study. this research examines five years' worth of data, and from that data, it can be found that january has the lowest visibility, with visibility of about 0.9 km and a corresponding attenuation of 3.64 db/km. the 850 nm wavelength has been taken into consideration in this study. it is suggested that transmitting power between 25 and 35 dbm be employed for the best transmission range of 6 to 8 km in order to provide error-free data transmission during the fog months. a fog attenuation model has been developed from the observed values of the optical attenuation of fog in several locations of europe and the united states, as published by the authors in [28]. according to this study, in moderate fog, 12 dbm of transmitted optical power is required to achieve ber (10-3) under 500 m connection length. some commercially available, visible to swir laser sources with wavelengths of 532 nm, 640 nm, 808 nm, 980 nm, and 1550 nm have been analyzed in this current article. each wavelength (532 nm, 640 nm, 808 nm, 980 nm, 1550 nm) of laser source is transmitted with 30 dbm peak optical power, at a link range of 5 km, data transmission frequency of 100 mhz, considering bit error rate (ber) 10-6 with relevant 16 db signal to noise ratio along with suitable optics corresponding to their relevant technical specifications. here main atmospheric condition has been considered as fog. an optical modulator unit, which modulates the continuous wave laser beam in accordance with the incoming message signal, has been taken into consideration for the establishment of the terrestrial fso link. the analytical findings section discusses several computations related to link margin with the considered wavelengths in different visibility circumstances. several visibility (for low to high visibility) and their attenuation (db) at five-kilometer distances are assessed in this article. this article also covers the use of carefully selected optics to reduce beam divergence loss. 2. establishment of terrestrial fso link the terrestrial fso system comprises mainly three unitstransmitter, receiver, and free space terrestrial channel. for reliable and rugged communication system, different optical accessories like lens, optical filter, beam expander, etc. are required in clear as well as adverse weather conditions. the transmitter unit consists of continuous wavelength laser source, optical modulator unit and beam expander. the beam expander is a combination of concave and convex lenses. the beam expander is used at the transmitter side to reduce the beam divergence with the same power expansion; as a result, beam diameter at receiving end as well as beam divergence loss is decreased at the longer distance [29][30]. the specifications of the lasers and the beam expander are given in table 1. 310 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity fig. 1 effect of different optics used in terrestrial fso system [30][31] the beam diameter (db) at the receiver side is defined by equation (1) [32] ( * tan )b ld d l = + (1) ɵ represents laser beam divergence angle, l indicates terrestrial fso link distance, dl defines laser beam aperture, as ɵ is very small, tan ɵ can be written as ɵ. after using the beam expander at the transmitter side, the beam diameter at the receiver side can be obtained from equation (2). the effect of the beam expander and other optics is illustrated in fig 1. 1 ( * ) ( * tan( ))b ld mf d l mf  = + (2) db1 indicates beam diameter at the receiver side using beam expander, mf represents magnifying factor of beam expander the atmospheric channel consists of different gas, molecules, aerosols, etc., with different hazards like fog, rain, dust, snow, etc. the attenuation of laser power of different hazardous atmospheric conditions is discussed in the next section. table 1 specifications of laser sources, beam expander sl no. parameter value 1. laser wavelength 532nm, 640nm, 808nm, 980nm, 1550nm 2. beam divergence angle 0.1 mrad 3. transmitted peak laser power 1 watt 4. beam waist 2.5 mm 5. operating mode continuous-wave (cw), tunable optical power 5. transmittance of beam expander 96 % 6. magnifying power of beam expander 20x 7. entrance aperture of beam expander 2.5 mm 8. exit aperture of beam expander 50 mm after traversing the aforesaid free space terrestrial channel, the modulated transmitted optical signal must be received by the properly aligned photodetector. different optical accessories like lens, optical filter, etc. are incorporated or attached before the photodetector for reliable and rugged communication [33]. to accumulate or converge the transmitted beam at a particular focal length at the receiver side, convex lens is mainly comparative investigation of visible to swir lasers for terrestrial fso link 311 used. an optical filter rejects the unwanted radiation and passes the desired wavelength beam. in this comparative study, two types of photodetectors are considered. for 532 nm, 640 nm, 808 nm laser sources, silicon-based, pin photodetector is considered which is denoted as photodetector 1 and for 980 nm and 1550 nm laser, ingaas [34] based pin detector is considered which is denoted as photodetector 2. the specifications of photodetector 1 and 2, are given in table 2. table 2 specifications of photo-detector 1 and 2 sl. no. parameter photo-detector 1 photo-detector 2 1. operative wavelength range 320 nm – 1000 nm 850 nm – 1700 nm 2. active diameter 0.4 mm2 0.3 mm2 3. responsivity at peak (rλ) 0.51 a/w, 800 nm 1 a/w, 1550 nm 4. responsivity (rλ1) at 532 nm0.35 a/w (rλ2) at 640 nm0.415 a/w (rλ3) at 808 nm0.505 a/w (r’λ1) at 980 nm0.64 a/w (r’λ2) at 1550 nm1 a/w [35][36] 5. 3 db bandwidth 125 mhz 125 mhz 6. dark current (id) 5 na 2 na the materials that are used for the fabrication of photodetectors or photodiodes greatly influence the characteristics of the detectors or diodes itself. amongst them, one of the mentionable characteristics is their response to particular wavelengths. the sole reason behind this varying response to particular wavelengths is that the different materials, used in the manufacture of the concerned photodetectors or photodiodes, generate photons, which in turn is responsible for the generation of sufficient energy for the electrons to travel across the bandgap inducing current across the detectors or diodes. the wavelength sensitivity of silicon is 190 nm to 1100 nm and indium gallium arsenide is sensitive for 850 nm 1700 nm wavelength. besides the wavelength sensitivity of the material of the photodetector, another key factor is the level of noise is produced in the photodetector which can have a major impact on the performance of the system [37]. quantum efficiency is another important parameter of the photodetector, which is defined as the photodetector capability to convert light energy to electrical energy and it is expressed in percentage which is expressed in equation (3) [38]. quantum efficiency (ƞ) is related to the responsivity (a/w) of photodetector or photodiode, photon energy of incident light. *r e q  = (3) rλ denotes responsivity of photodetector, e indicates energy of incident photon on photodetector, q represents charge of electron. the energy of a particular wavelength of the photon is given by equation (4) [38] *h c e  = (4) the quantum energy for the above-mentioned wavelength is given in table 3. 312 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity table 3 quantum efficiency of photodetector, quantum energy of different wavelength laser sl. no. different wavelength of lasers (nm) quantum energy of wavelength (j) responsivity of photodetector of different wavelength lasers(a/w) quantum efficiency (%) 1. 532 3.7 x 10-19 0.35 ~ 81 2. 640 3.12 x 10-19 0.415 ~ 81 3. 808 2.56 x 10-19 0.505 ~ 81 4. 980 2.03 x 10-19 0.64 ~ 81 5. 1550 1.3 x 10-19 1.00 ~ 81 the specifications of convex lens & optical filter are given in table 4. these are applicable for above mentioned all the wavelengths of coherent beam optical sources. above mentioned units and accessories are shown in fig 1. table 4 specifications of convex lens & optical filter sl. no. parameter value 1. diameter & focal length of lens 75 mm, 300 mm 2. transmittance of lens 98% 4. diameter of optical filter 25 mm 5. fwhm of optical filter 10 nm 6. transmittance of optical filter 50%-70% the block diagram of the terrestrial fso system is shown in fig 2. in this system, continuous wave coherent optical beam has been modulated by an optical modulator unit according to the coming message signal. the optical modulator is used to shutter the coherent beam on and off. fig. 2 block diagram of terrestrial fso system [38] by applying the digital data input which is coming from the message signal fed to the optical modulator unit, the optical modulator modulates the laser beam according to the comparative investigation of visible to swir lasers for terrestrial fso link 313 message signal. the modulated coherent beam is fed to the transmitting optics i.e., the beam expander. the transmitted modulated beam is propagated through terrestrial free space, and then it is fallen on the convex lens. the size of the convex lens is an important factor to reduce the background noise of the receiver side, the size of the convex lens may be equal to the beam size of the receiver side. larger size of the convex lens may create background noise in the fso system and the small size (less than the beam size of the receiver side) of the convex lens may create the beam expansion loss. after collecting the modulated coherent beam from convex lens, it is fed to optical filter. then desired wavelength, noise-free, the modulated beam reaches to the properly aligned photodetector. by trans-impedance amplifier, the current signal in photo-detector has been converted to amplified voltage level. the main advantage of using the trans-impedance amplifier is that it has a high dynamic range, the numbing effect of negative feedback makes the stability of receiver response over time, temperature, etc., commendable. a high-speed comparator (around 200 mhz bandwidth) is used for evens out the signal peaks; as a result, a clean signal is obtained. 3. terrestrial fso channel when the optical coherent source i.e. laser is propagated through the terrestrial or atmospheric path, scattering and absorption has occurred on the link because gases, particles, aerosols, etc. are suspended in the atmosphere or terrestrial path. the terrestrial fso link can be attenuated by the different atmospheric precipitations like rain, fog, snow, etc. the precipitations present in the atmosphere vary with season, longitude, latitude of the area. obviously, near the earth's surface (troposphere), the concentration of particles is high. this type of concentration is low with increasing altitude is also high (in the ionosphere). for a particular terrestrial link range (l), the laser power attenuation through the atmosphere is determined by equation (5) which is called beers-lambert law [39]: ( )* ( , ) t lr t p l e p    − = = (5) τ(λ,l) &ϒt(λ) indicates total attenuation or extinction coefficient, pr indicates received optical power, pt indicates transmitted optical power. the attenuation coefficient of aerosols and molecular constituents of the atmosphere is shown in equation (6) [40]. ( ) ( ) ( ) ( ) ( )t m a a m         = + + + (6) αm(λ), αa(λ) indicates the molecular and aerosol absorption coefficients, while µa(λ), µm(λ) indicates the molecular and aerosol scattering coefficients respectively. generally, atmospheric absorption is wavelength dependent phenomenon, molecular absorption of different wavelengths is different. generally, the total molecular and aerosol absorption coefficient is very less than the molecular and aerosol scattering coefficient. so, equation (6) can be written as which is represented in equation (7) ( ) ( ) ( )t a m     = + (7) the scattering effects are very much wavelength (λ) dependent, as well as scattering effect depends upon the radius (r) or size of the molecule, aerosols (fog, mist, etc.). 314 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity according to size parameter (no = 2πr/λ), mainly three types of scattering phenomenon can be observed which is depicted in fig. 3[41][42]. fig. 3 classification of scattering phenomenon in this article, the effect of fog is only considered, hence the effect of fog on fso channel has been discussed below: 3.1. effect of fog the term ‘fog’ is very small, but the impact on the terrestrial fso link is high. the radius of the fog droplets in between 1~20 µm, the scattering phenomenon occurred mainly mie or sometimes geometrical scattering in foggy conditions. fog contributes the major optical power attenuation because the terrestrial-based fso system wavelength band (0.5µm 2µm) falls within the fog particle droplet size. the attenuation coefficient (db/km) can be measured with a common mie scattering empirical model which is related to very much visibility, the wavelength of the optical source is given in equation (8)[43][44]. 3.91 550 ( ) ( )*( )q fa v   = (8) af(λ) represents attenuation coefficient, v indicates visibility (km), λ depicts wavelength (nm) of optical coherent source, q indicates constant parameter which is related to particle size distribution and visibility. total attenuation (lfog) (db) due to fog for a particular link range is given by equation (9)[45][46], ( )* 10*log( )fa l fogl e − = − (9) the visibility range of dense fog to thin fog varies between 150 m to 2000 m. according to the visibility range, the attenuation coefficients are also varying for a particular optical wavelength source. the value of q is defined by two models which are given in table 5. the attenuation (db) due to fog with different visibility (km) and wavelength of laser at link range of 5 km is illustrated in fig 4. table 5 the value of q according to different visibility range [47][48] sl. no. visibility range (m) value of q (according to kim model) 1. v>50000 1.6 2. 6000 30 km.) -1.8 db -1.4 db -1.05 db -0.82 db -0.45 db scintillation loss (cn 2 = 10-16 m-2/3) -3.2 db -2.8 db -2.5 db -2.2 db -1.7 db receiver optical loss (consider convex lens & optical filter) -1.55 db -1.55 db -1.55 db -1.55 db -1.55 db photo-detector sensitivity for 16 db snr -32 dbm -33 dbm -34.2 dbm -35.4 dbm -37 dbm obtained link margin ~ 56 db ~ 57 db ~ 59 db ~ 60.6 db ~ 63.1 db mainly, two reasons are responsible for the variation of the link margin of different laser sources are used in terrestrial fso link. the first reason is the optical power attenuation of different wavelength in different atmospheric conditions are not same. as 330 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity seen from the ‘beer lambert’ law, the lower range of optical wavelength is more attenuated than the higher range of optical wavelength, when it is propagated through the atmospheric channel. therefore, received optical power at the receiver side is not the same for all considered wavelengths. another reason is the generated signal current in the photodetector which is dependent upon the received optical power and responsivity of the photo-detector. as the responsivity of the photo-detector of each wavelength is different so the generated signal current is different for different wavelengths which creates an impact on photodetector sensitivity. shot noise or background noise which is generated in photo-detector, dependent on the spectral irradiance of sky, this value is (the value of irradiance is different with different values of wavelength, in general, the values of irradiance for 532 nm, 640 nm, 808 nm, 980 nm, and 1550 nm are 1200 w/m2µm, 1160 w/m2µm, 910 w/m2µm, 605 w/m2µm, 210 w/m2µm) [60] different for different wavelength. this can create an impact on photo-detector sensitivity for different wavelength laser sources. as a result, the link margin value is varying for different wavelength optical sources and swir wavelengths are given the higher link margin value. the terrestrial link using aforesaid wavelengths can be worked in atmospheric visibility condition is summarized in table 7. this table depicts the maximum permissible limit of visibility of fog using 5 km link range and different wavelengths are considered. table 9 link margin matrix for 5 km link range with different laser sources in foggy weather conditions wavelengths 532 nm 640 nm 808 nm 980 nm 1550 nm visibility: 1.45 km visibility: 1.3 km visibility: 1.14 km visibility: 1.02 km visibility: 0.88 km rain rate: 33.0 mm/hr rain rate: 33.9 mm/hr rain rate: 34.8 mm/hr rain rate: 35.6 mm/hr rain rate: 36.4 mm/hr dry snow rate: 1.4 mm/hr dry snow rate: 1.5 mm/hr dry snow rate: 1.62 mm/hr dry snow rate: 1.75 mm/hr dry snow rate: 1.94 mm/hr wet snow rate: 4.2 mm/hr wet snow rate: 4.8 mm/hr wet snow rate: 5.6 mm/hr wet snow rate: 6 mm/hr wet snow rate: 6.5 mm/hr as the link margin is different for different considered wavelengths, therefore, the link performance has been different for different considered wavelength for a particular environmental situation. from the table 8, it has been depicted that 1550 nm laser source provides highest link margin & 532 nm provides lower link margin, as a result 1550 nm provides better link performance in lower visibility as well as higher visibility condition, whereas 532 nm performs worse in lower as well as higher visibility condition. from the link margin table, it can be seen that the 1550 nm laser source offers a link margin of 63.1 db followed by the 980 nm laser source which offers a link margin of 60.6 db. hence, from the cost-effective or economic point of view, 980 nm laser source may be used in terrestrial fso system instead of 1550 nm laser source. in case of visible light communication systems, 640 nm laser source may give an effective result than 532 nm laser source. comparative investigation of visible to swir lasers for terrestrial fso link 331 fig. 25 tentative price of considered different wavelength laser source [61][62] fig. 25 presents a preliminary cost estimate for the various wavelengths of laser sources under consideration. this cost study has demonstrated that the cost of the 980 nm laser is less than that of the 1550 nm laser source. ingaas-type photodetectors are typically needed for 1550 nm wavelength laser sources because they have greater response at this wavelength than si type detectors, which are not appropriate for this wavelength. conversely, 980 nm wavelength responds in si and ingaas types of photodetectors. however, this study has taken into consideration an ingaas type detector for a 980 nm laser source. when considering costeffectiveness, si detectors are more economical than ingaas type detectors. fig. 26 shows the tentative price of of p-i-n type si & ingaas photodetector. fig. 26 tentative price of p-i-n type si & ingaas photodetector [63][64][65] 6. conclusion in this article, a detailed comparative study of different wavelengths like 532 nm, 640 nm, 808 nm, 980 nm, 1550 nm in different atmospheric conditions, has been analyzed with corresponding actual technical specifications of optical accessories. these accessories are required in a typical terrestrial fso communication system. therefore, from this study, it has been found that the swir wavelength laser source (1550 nm) poses as a better option in the foggy weather situations than other wavelengths especially, the visible laser sources. 332 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity the attractive features of a typical fso system make it suitable for remote applications. this system can also be used to establish different networks like building to building, ground to hill, hill to hill, military application, tactical communication, etc. in disaster areas, where a temporary link is required due to the disintegration of any existing communication link, this system can perform very well. the main drawback of the terrestrial fso system is that the optical beam or optical power is attenuated by atmospheric anomalies like rain, fog, etc. the primary disadvantage of this kind of system is its extreme reliance on the weather. under very unfavorable weather circumstances, this device can malfunction or stop working altogether. consequently, efforts are being made in a number of countries to improve system resilience during inclement weather. various diversity methods, such as multiple input single output (miso), single input multiple output (simo), and multiple output multiple input (mimo) etc., are well-known for their ability to reduce the atmospheric attenuation level [66][67][68][69]. in the event of unfavorable weather, the wavelength diversity scheme (using mid-wave infrared) may be advantageous [70][71][72][73][74][75]. a further noteworthy deployment is the integration of this system with the traditional radio frequency system [76]. in inclement weather, the rf system is turned on and the fso is turned off. to install this type of terrestrial fso system as per requirement, in the above-mentioned applications area, this comparative study can be resourceful. compared to other wavelengths, the 1550 nm laser source works better in various atmospheric anomalies and offers a superior pointing error angle in both favourable and unfavourable weather situations. the technical specifications of optical accessories mentioned in this article may help to estimate the link performance for a longer link range (5 km), subjected to hazardous atmospheric conditions for establishing reliable communication. the five principal wavelengths, which are phenomena, have been linked to the current investigation. longer connection distance was also linked to this study. the main atmospheric factors are taken into account, and using carefully selected optics, the impact of each meteorological factor on each wavelength is thoroughly assessed. consequently, the link margin has been successfully raised. finally, the link margin has been assessed for each wavelength after accounting for the pointing error in this simulation. this system is mostly used in disaster situations when traditional internet connections have failed or been damaged. in these cases, it may be quickly set up for short-term communication needs. the results of this study's evaluation of several wavelengths, including visible, swir, and others, show the link margins for each wavelength separately. several relevant investigations have been conducted from the literature survey portion (in the introduction section), although the link distance has not been very great, and comparisons have been made at a maximum of two or three wavelengths for a certain atmospheric condition. prior to deploying this kind of system in specific application areas, however, a thorough investigation with suitable optical accessories has been conducted with five significant wavelengths and various significant atmospheric scenarios. this study was conducted with a large link distance (5 km). by suitably choosing the optical accessories, the link margin has been increased efficiently. comparative investigation of visible to swir lasers for terrestrial fso link 333 references [1] a. malik and p. singh, "free space optics: current applications and future challenges", int. j. optics, vol. 6, pp. 1-7, 2015. [2] z. ghassemlooy, w. o. popoola and s. rajbhandari, optical wireless communications system and channel modelling with matlab, chapter 2, crc press, 2012. [3] b. bhattacharjee, p. k. sadhu, a. ganguly and a. k. naskar, "integrated green submersible pumping system for future generation", fu elec. energ., vol. 34, no. 1, pp. 37-51, 2021. [4] b. bhattacharjee, a. chakrabarti and p. k. sadhu., "solar photovoltaic integrated pump for advanced irrigation system", int. j. innov. technol. explor. eng., vol. 8, no. 8, pp. 3246-3250, 2019. [5] s. m. a. shah, m. s. a. latiff and r. tahir, "performance measurement of free-space optical 980 nm channel using multiple sets of environmental conditions", wirel. pers. commun., vol. 85, pp. 345357, 2015. [6] t. manna, a. das, b. bhattacharjee and s. mukherjee, "robust communication strategy for overcoming narrowband jamming in low-frequency cdma-dsss system using matlab", fu elec. energ., vol. 37, no. 3, pp. 531-540, 2024. [7] s. ghoname, h. a. fayed, a. a. el aziz and m. h. aly, "performance analysis of fso communication system: effects of fog, rain and humidity", in proceedings of the sixth international conference on digital information processing and communications (icdipc), 2016, pp. 151-155. [8] m. m. shumani, m. f. l. abdullah and a. z. suriza, "the effect of haze attenuation on free space optics communication (fso) at two wavelengths under malaysia weather", in proceedings of the international conference on computer and communication engineering (iccce), 2016, pp. 459-464. [9] shaina, a. gupta, "comparative analysis of free space optical communication system for various optical transmission windows under adverse weather conditions", in proceedings of the twelfth international multi-conference on information processing, 2016. [10] a. tripathi, g. g. soni, s. gupta and s. a. mandloi, "experimental investigation of wind and temperature induced scintillation effect on optical wireless communication link", optik, vol. 178, pp. 1248-1254, 2019. [11] g. g. soni, a. tripathi, m. shroti and k. agarwal, "experimental study of rain affected optical wireless link to investigate regression parameters for tropical indian monsoon", opt. quantum electron., vol. 55, p. 384, 2023. [12] g. g. soni, a. tripathi, a. mandloi and s. gupta, "compensating rain induced impairments in terrestrial fso links using aperture averaging and receiver diversity", opt. quantum electron., vol. 51, p. 244, 2019. [13] a. tripathi, s. gupta and a. mandloi, "investigation of weather effects toward convergence of wired and wireless gigabit services over hybrid free-space optical link", opt. eng., vol. 60, no. 2, p. 026102, 2021. [14] g. g. soni, a. tripathi, a. mandloi and s. gupta, "effect of wind pressure and modulation schemes on rain interrupted optical wireless links under tropical climates", opt. quantum electron., vol. 51, p. 172, 2019. [15] s. chaudhary, x. tang, z. ghassemlooy, b. lin, x. wei and s. k. liaw, "a 3 × 25 mbps wdm-rovlc system for amateur radio applications", in proceedings of the 2nd west asian colloquium on optical wireless communications (wacowc), 2019, pp. 6-10. [16] s. k. modalavalasa, r. miglani, s. chaudhary, f. tubbal and r. raad, "developing cost-effective and high-speed 40 gbps fso systems incorporating wavelength and spatial diversity techniques", front. phys., vol. 9, p. 744160, 2021. [17] anuranjana, s. kaur, r. goyal and s. chaudhary, "1000 gbps mdm-wdm fso link employing dpqpsk modulation scheme under the effect of fog", optik, vol. 257, p. 168809, 2022. [18] p. liang, c. zhang, j. nebhen, s. chaudhary and x. tang, "cost-efficient hybrid wdm-mdm-rofso system for broadband services in hospitals", front. phys., vol. 9, p. 732236, 2021. [19] c. zhang, p. liang, j. nebhen, s. chaudhary, a. sharma, j. malhotra and b. sharma, "performance analysis of mode division multiplexing-based free space optical systems for healthcare infrastructure’s", opt. quantum electron., vol. 53, p. 635, 2021. [20] s. chaudhary, l. wuttisittikulkij, j. nebhen, x. tang, m. saadi, s. a. otaibi, a. althobaiti, a. sharma and s. choudhary, "hybrid mdm-pdm based ro-fso system for broadband services by incorporating donut modes under diverse weather conditions", front. phys., vol. 9, p. 756232, 2021. [21] n. xiaolong, y. haifeng, l. zhi, c. chunyi, m. ce and z. jiaxu, "experimental study of the atmospheric turbulence influence on fso communication system", in proceedings of asia communications and photonics conference, 2018, pp. 1-3. http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/6405 http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/6405 https://link.springer.com/article/10.1007/s11082-023-04677-0 https://link.springer.com/article/10.1007/s11082-023-04677-0 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-gireesh_g_-soni-aff1-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-abhishek-tripathi-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-abhilash-mandloi-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-shilpi-gupta-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1 https://link.springer.com/article/10.1007/s11082-019-1962-1 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-gireesh_g_-soni-aff1-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-abhishek-tripathi-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-abhilash-mandloi-aff2 https://link.springer.com/article/10.1007/s11082-019-1962-1#auth-shilpi-gupta-aff2 https://link.springer.com/article/10.1007/s11082-019-1893-x https://link.springer.com/article/10.1007/s11082-019-1893-x https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-chentao-zhang-aff1 https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-peidong-liang-aff1 https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-jamel-nebhen-aff2 https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-sushank-chaudhary-aff3 https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-abhishek-sharma-aff4 https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-jyoteesh-malhotra-aff4 https://link.springer.com/article/10.1007/s11082-021-03167-5#auth-bindu-sharma-aff5 https://link.springer.com/article/10.1007/s11082-021-03167-5 https://link.springer.com/article/10.1007/s11082-021-03167-5 https://link.springer.com/article/10.1007/s11082-021-03167-5 334 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity [22] m. a. esmail, h. fathallah and m. s. alouini, "an experimental study of fso link performance in desert environment", ieee commun. lett., vol. 20, no. 9, pp. 1888-1891, 2016. [23] a. khandakar, a. touati, f. touati, a. abdaoui and a. bouallegue, "experimental setup to validate the effects of major environmental parameters on the performance of fso communication link in qatar", appl. sci., vol. 8, no. 12, p. 2599, 2018. [24] s. malik and p. k. sahu, "a study on free space optical communication for bhubaneswar city", in proceedings of usnc-ursi radio science meeting, 2017, pp. 101-102. [25] s. m. yasir, n. abas and m. s. saleem, "performance analysis of 10gbps fso communication link under suspended dust and rain conditions in lahore, pakistan", nonlinear opt. quantum opt., vol. 0, pp. 1-18, 2019. [26] r. nebuloni and c. capsoni, "laser attenuation by falling snow", in proceedings of the 6th international symposium on communication systems, networks and digital signal processing, 2008, pp. 265-269. [27] a. kesarwani, anuranjana, s. kaur, m. kaur and p. s. vohra, "performance analysis of fso link under diferent conditions of fog in delhi, india", in proceedings of the 2nd ieee international conference on power electronics, intelligent control and energy systems (icpeices), 2018, pp. 958-961. [28] m. a. esmail, h. fathallah and m. s. alouini, "outdoor fso communications under fog: attenuation modeling and performance evaluation", ieee photonics j., vol. 8, no. 4, pp. 1-22, aug. 2016. [29] https://www.ulooptics.com/beam-expanders/ [30] h. kaushal, g. kaddoum, v. k. jain and s. kar, "experimental investigation of optimum beam size for fso uplink", opt. commun., vol. 400, pp.106-114, 2017. [31] s. mukherjee, s. paul and s. mazumdar, "a cost effective fso communication link using 808 nm laser and its performance analysis in simulated temperature conditions", opt. quantum electron., vol. 55, pp. 1-15, 2023. [32] b. das, s. mukherjee, b. chattopadhyay and s. mazumdar, "design of a 10 ghz optical wireless communication link using low power c-band laser diode", result in opt., vol. 5, pp. 1-11, 2021. [33] a. g. alkholidi and k. s. altowij, "free space optical communications -theory and practices" in wireless communications, 2014. [34] s. mukherjee, s. paul and s. mazumdar, "effect of mimo scheme on mwir fso link & comparison with swir wavelength in the presence of different visibility and strong turbulence circumstances", j. opt. commun., vol. 45, no. s1, pp. s1977-s1983, 2023. [35] s. k. mandal, b. bera and g. g. dutta, "free space optical(fso) communication link design under adverse weather condition", in proceedings of international conference on computer, electrical & communication engineering (iccece), 2020, pp. 1-6. [36] thorlabs, ingaas amplified photodetectors, fixed gain. [online] available at: https://www.thorlabs.com/newgrouppage9.cfm?objectgroup_id=4#1897 [37] a. b. stephen, optical communication receiver design, spie optical engineering press, 1997. [38] h. kaushal, v. k. jain and s. kar, free space optical communication, springer india, 1st ed, 2017. [39] s. mukherjee, s. paul and s. mazumdar, "experimental studies of fso communication channel using visible wavelengths coherent optical sources in artificial rainy condition", in proceedings of 2022 ieee calcutta conference (calcon), kolkata, india, 2022, pp. 98-103. [40] z. ghassemlooy and w. o. popoola, "terrestrial free-space optical communication" in mobile and wireless communications network and circuit level design, chapter 17, intech, 2010. [41] m. c. baddock, c. l. strong, j. f. leys, s. k. heidenreich, e. k. tews and g. h. mctainsh, "a visibility and total suspended dust relationship", atmos. environ., vol. 89, pp. 329-336, 2014. [42] t. s. sarkar, b. sinha, s. mukherjee, i. jaradar and s. mazumdar, "development of an fpga based indoor fso communication system using 808 nm infrared laser source", in proceedings of 2020 ieee calcutta conference (calcon), kolkata, india, 2020, pp. 313-317. [43] i. i. kim, b. mcarthur and e. j. korevaar, "comparison of laser beam propagation at 785 nm and 1550 nm in fog and haze for optical wireless communications", proceedings of spie-the international society optical engineering, vol. 4214, pp. 1-12, 2001. [44] s. mukherjee, b. das and s. mazumdar, "experimental studies of laser power attenuation of 532 nm laser at different visibility using simulated foggy conditions", aip conf. proc., vol. 2640, p. 020029 2022. [45] m. twati, m. badi and f adam, "analysis of rain effects on free space optics based on data measured in the libyan climate", int. j. inform. electron. eng., vol. 4, no. 6, pp. 469-472, 2014. [46] s. chaudhary and a. amphawan, "the role and challenges of free-space optical systems", j. opt. commun., vol. 35, no. 4, pp. 327-334, 2014. https://www.thorlabs.com/newgrouppage9.cfm?objectgroup_id=4#1897 comparative investigation of visible to swir lasers for terrestrial fso link 335 [47] s. mukherjee, s. paul and s. mazumdar, "experimental studies and analysis of 1550 nm laser as optical wireless communication link in simulated rainy, foggy and heating conditions according to indian atmosphere", light eng., vol. 31, pp. 19-33, 2023. [48] p. w. kruse, l. d. mcglauchlin and r. b. mcquistan, elements of infrared technology: generation, transmission, and detection, j. wiley & sons, new york, 1962. [49] l. c. andrews, r. phillips and c. y. hopen, laser beam scintillation with applications, bellingham, wa, usa: spie; 2001. [50] e. jackman and p. pusey, "significance of k-distributions in scattering experiments", phys. rev. lett., vol. 40, no. 9, p. 546, 1978. [51] m. al-habash, l. c. andrews and r. l. phillips, "mathematical model for the irradiance probably density functions of a laser beam propagating through turbulent media", opt. eng., vol. 40, no. 8, p. 200410, 2001. [52] s. parween and a. tripathy, "free space optic communication using optical am, ook-nrz and ook-rz modulation techniques", in proceedings of the 3rd international conference on electronics, materials engineering & nano-technology (iementech), 2019, pp. 1-4. [53] n. a. mohammed, a. el-wakeel and m. h. aly "pointing error in fso link under different weather conditions", int. j. video image process. netw. secur., vol. 12, no. 1, pp. 6-9, 2012. [54] s. singh and g. soni, "pointing error evaluation in fso link", in proceedings of the fifth international conference on advances in recent technologies in communication and computing (artcom), 2013, pp. 365-370. [55] m. k. el-nayal, m. m. aly, h. a. fayed and r. a. abdelrassoul, "adaptive free space optic system based on visibility detector to overcome atmospheric attenuation", results in phys., vol. 14, p. 102392, 2019. [56] h. j. kbashi, m. a. hameed and s. a. shykre, "calculations of signal to noise ratio (snr) for free space optical communication systems", um-salama sci. j., vol. 5, no.1, pp. 95-100, 2008. [57] r. barrios and f. dios, "wireless optical communications through the turbulent atmosphere: a review" in optical communications system, chapter 1, intech, 2011. [58] m. a. a. ali, "comparison of nrz, rz-ook modulation formats for fso communications under fog weather condition", int. j. comput. appl., vol. 108, no. 2, pp. 29-34, 2014. [59] s. mukherjee, s. paul and s. mazumdar, "experimental studies of the influence of scintillation on a fso communication system for visible and infrared wavelengths", j. russian laser res., vol. 44, pp. 357-364, 2023. [60] v. vaida, j. s. daniel, h. g. kjaergaard, l. m. goss and a. f. tuck, "atmospheric absorption of near infrared and visible solar radiation by the hydrogen bonded water dimmer", q. j. r. meteorol. soc., vol. 127, pp.1627-1643, 2001. [61] laser diode source, "how much does a laser diode cost?". [online] available at: https://www.laserdiodesource.com/how-much-does-a-laser-diode-cost [62] roithner lasertechnik price list. [online] available at: https://www.roithner-laser.com/pricelist.pdf [63] hamamatsu ingaas pin photodiode, part number: g12180-110a specifications. [online] available at: https://www.indiamart.com/proddetail/ingaas-pin-photodiode-23949488712.html [64] hamamatsu si pin photodiode, part number: s5821-03 specifications. [online] available at: https://www.indiamart.com/proddetail/si-pin photodiode23931285830.html?srsltid=afmboorranf8k_fhncdjkjysx0hgafipyptqxwsnzsxff3 z6bapofhf4 [65] thorlabs, free-space balanced amplified photodetectors [online] available at: https://www.thorlabs.com/ newgrouppage9.cfm?objectgroup_id=1299 [66] p. kaur, v. k. jain and s. kar, "performance analysis of fso array receivers in presence of atmospheric turbulence", ieee photonics technol. lett., vol. 26, pp. 1165-1168, 2014. [67] p. kaur, v. k. jain and s. kar, "performance analysis of free space optical links using multi-input multi-output and aperture averaging in presence of turbulence and various weather conditions", iet commun., vol. 9, no. 8, pp.1104-1109, 2015. [68] p. kaur, v. k. jain and s. kar, "ber performance improvement of fso links with aperture averaging and receiver diversity technique under various atmospheric conditions", in proceedings of the 9th international conference on industrial and information systems (iciis), 2014, pp. 1-6. [69] b. das, s. mukherjee, b. chattopadhyay and s. mazumdar, "design of a 10 ghz optical wireless communication link using low power c-band laser diode", results in opt., vol. 5, p. 100129, 2021. [70] j. mikolajczyk, r. weih and m. motyka, "optical wireless link operated at the wavelength of 4.0 μm with commercially available interband cascade laser", sensors, vol. 21, no. 12, p. 4102, 2021. https://rmets.onlinelibrary.wiley.com/authored-by/kjaergaard/h.+g. https://rmets.onlinelibrary.wiley.com/authored-by/goss/l.+m. https://rmets.onlinelibrary.wiley.com/authored-by/tuck/a.+f. https://www.laserdiodesource.com/how-much-does-a-laser-diode-cost https://www.roithner-laser.com/pricelist.pdf https://www.indiamart.com/proddetail/ingaas-pin-photodiode-23949488712.html https://www.indiamart.com/proddetail/si-pin%20photodiode23931285830.html?srsltid=afmboorranf8k_fhncdjkjysx0hgafipyptqxwsnzsxff3z6bapofhf4 https://www.indiamart.com/proddetail/si-pin%20photodiode23931285830.html?srsltid=afmboorranf8k_fhncdjkjysx0hgafipyptqxwsnzsxff3z6bapofhf4 https://www.indiamart.com/proddetail/si-pin%20photodiode23931285830.html?srsltid=afmboorranf8k_fhncdjkjysx0hgafipyptqxwsnzsxff3z6bapofhf4 https://www.thorlabs.com/%0bnewgrouppage9.cfm?objectgroup_id=1299 https://www.thorlabs.com/%0bnewgrouppage9.cfm?objectgroup_id=1299 336 s. mukherjee, b. bhattacharjee, p. kumar sadhu, h. maity [71] t. liu, j. zhang, c. zhu, y. lei, c. sun and r. zhang, "investigation of the wavelength selection for the free space optical communication system", in proceedings of the asia communications and photonics conference (acp), 2018, pp. 1-3. [72] s. m. johnson, e. dial and m. razeghi, "high-speed optical communications based quantum cascade lasers and type-ii superlattice detectors", in proceedings of spie opto, 2020, p. 1128814. [73] j. l. miller, principles of infrared technology: a practical guide to the state of the art, new york: springer, 1994. [74] q. hao, g. zhu, s. yang, k. yang, t. duan, x. xie, k. huang and h. zeng, "mid-infrared transmitter and receiver modules for free-space optical communication", appl. opt., vol. 56, no. 8, pp. 22602264, 2017. [75] j. mikolajczyk and d. szabra, "integrated ir modulator with a quantum cascade laser", appl. sci., vol. 11, no. 14, p. 6457, 2021. [76] m. a. a. ali, s. a. adnan and s. a. al-saeedi, "transporting 8 × 10 gbps wdm ro-fso under various weather conditions", j. opt. commun., vol. 41, no. 1, pp. 99-105, 2020. 11938 facta universitatis series: electronics and energetics vol. 36, no 4, december 2023, pp. 589 600 https://doi.org/10.2298/fuee2304589j © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper enhancing circular microstrip patch antenna performance using machine learning models rachit jain, vandana vikas thakare, p.k. singhal department of electronics engineering, madhav institute of technology & science, gwalior, m.p, india abstract. machine learning (ml) will be heavily used in the future generation of wireless communication networks. the development of diverse communication-based applications is expected to boost coverage and spectrum efficiency in relation to conventional systems. ml may be employed to develop solutions in a wide range of domains, such as antennas. this article describes the design and optimization of a circular patch antenna. the optimization is done through ml algorithms. six ml models, decision tree, random forest, xg-boost regression, k-nearest neighbour (knn), gradient boosting regression (gbr), and light gradient boosting regression (lgbr), were employed in this work to predict the antenna's return loss (s11). the findings show that all of these models work well, with knn having the highest accuracy in predicting return loss of 98.5%. the antenna design & optimization process can be accelerated with the support of ml. these developments allow designers to push beyond the limits of antenna technology, optimize performance, and offer novel solutions for emerging applications such as 5g, 6g, iot, and flexible wireless communication systems). key words: circular patch antenna, machine learning (ml), return loss (s11), knn, decision tree, random forest, xg boost, gbr, lgbr 1. introduction antennas were originally used only for receiving communications such as radio and television. antennas are now found in almost every electronic gadget and are extremely important. the need for fast and dependable communication networks has been rising rapidly over the past several years. the employing of ultra-wideband (uwb) antennas is one method that could be used to accomplish this. the frequency range between 3.1 and 10.6 ghz has been designated by the federal communications commission (fcc) for uwb applications [1, 2]. since then, several researchers have started working on optimized antennas for various uwb applications. for the development and optimization of antennas, received june 30, 2023; revised august 06, 2023, august 26, 2023 and august 31, 2023; accepted september 05, 2023 corresponding author: rachit jain department of electronics engineering, madhav institute of technology & science, gwalior, m.p, india e-mail: rachit2709@gmail.com 590 r. jain, v. vikas thakare, p. k. singhal electromagnetic (em) simulators such as the high-frequency structure simulator (hfss) are commonly used. to achieve the desired parameters, the optimization will be done by adjusting the size of various antenna attributes. usually, the test-and-error approach has been used to carry out the optimization process. that is why the optimizing procedure consumes a lot of time. traditional antenna design methodologies rely significantly on the practical experiences of designers and electromagnetic (em) simulation technologies. however, these approaches are time-consuming, computationally expensive, and sometimes produce suboptimal results. as a result, there is a great demand for more efficient and intelligent methodologies for designing and optimizing antennas for a wide range of applications [3]. due to the diverse shapes of antennas, exact solutions in finite and closed forms are not available. however, by approximating solutions, valuable insights can be gained for antenna design. numerical analysis is a widely adopted technique for antenna design. methods such as finite difference time domain, finite element method electromagnetic, and method of moments [4, 5, 6,] are commonly utilized for testing and evaluating antennas. in complex antenna designs, this approach posed challenges in terms of memory usage and cpu requirements due to the size and parameters of the antenna structure. to enhance results and reduce irregularities, ml has emerged as a powerful tool. ml, a branch of artificial intelligence (ai), focuses on extracting information from data and finds significant application in statistical data science [7] ml-powered solutions boost custom antenna design greatly, giving benefits such as a reduction in time, increased computational performance, lower operational expenses, shorter simulation time, and reduced working hours. the ever-changing demand for multipurpose and compact antennas exposes antenna designers to new problems on a daily basis. ml has enormous promise in tackling these difficulties by building trained models that can rapidly optimize antenna designs to fulfill a variety of objectives. ml enables the establishment of connections between input and output responses by finding undiscovered mathematical relationships inside data, which enables accurate predictions in antenna design. various types of ml are represented in fig. 1. fig. 1 types of ml a deep belief networkextreme learning machine (dbn-elm) model based on pso (particle swarm optimization) was proposed by the author [8]. results demonstrate that the model can rapidly extract samples, minimize the complexity and computational cost imposed by repeated simulations in antenna design, and significantly increase the effectiveness of antenna design. two uwb antenna designs have been optimized in their work using this approach. the antenna's operational frequency range is from 3.3 to 12.1 ghz. the proposed dbn elm model offers better prediction abilities and may also be utilized for illustrating more complicated antenna structures. to optimize antenna design, the article’s [9] author recommended applying ml models such as the least absolute shrinkage and selection operator (lasso), artificial neural networks (anns), and k-nearest neighbour (knn) and checking the accuracy of these enhancing circular microstrip patch antenna performance using machine learning models 591 models, they are applied to a reference double t-shaped monopole antenna. results from the high-frequency structure simulator (hfss) are compared with those predicted by these ml techniques. specifically, ann and lasso provide more precise predictions as compared to knn. in the final analysis, proposed by the author, these innovative methods are more effective than the conventional em simulation optimization technique in designing an optimal antenna design. the findings of this investigation also demonstrate that ml methods possess an opportunity to transform em simulation methods. the uses of ml in antenna design are discussed and examined thoroughly in the study [10]. the essential features of ml are covered, including its fundamental idea, how it differs from artificial intelligence and deep learning, learning algorithms, and its numerous applications across a range of technologies, with a particular focus on how it's utilized in antenna design. the analysis contrasts the outcomes of antenna design using ml with those obtained using traditional design techniques. it has been observed that ml will speed up the antenna design process while maintaining high precision, and able to predict antenna performance, with better computing power, and a reduction in the amount of simulations that are required. the author [11] demonstrates the application of ml techniques to forecast the s11 (return loss), which is a very important feature of patch antennas. the results show that s11 predictions made using different ml algorithms (decision tree, random forest, xg boost, and knn) are quite precise as well as accurate. it might be helpful in predicting resonant frequency without the need for time-consuming simulations. the article [12] illustrates the modeling of a microstrip antenna using regressionbased ml. the author investigated several effects on the physical and electrical characteristics of the materials employed, the impact of the slot, and the size of the patch on the antenna's resonant frequency. root mean square error, r square value, and mean absolute error (mae) are the evaluation criteria used in this work, result shows that performance is extremely similar as predicted by the regression-based ml approach. in the work [13] author describes the design and optimization of a small coplanar waveguide (cpw) fed band-notched monopole antenna. this article's distinctive characteristic is that it offers a method for optimally building an antenna using ml techniques. the antenna design process can be accelerated with the aid of ml. five methods are used: knn, xg-boost regression, decision tree, random forest, and artificial neural network (ann). knn produces the most precise results out of all the algorithms, with an accuracy rate of as much as 98%. it can estimate the dimensions of the required parameters based on the acquired results, something the high-frequency structure simulator (hfss) electromagnetic (em) simulator was unable to accomplish. this article analyses the use of ml technology in antenna design optimization. the purpose is to use ml algorithms to predict the return loss (s11) based on various antenna parameters. by doing so, it hopes to eliminate the need for repetitive trial and erroroptimization methods. the study employs six different algorithms: decision tree, random forest, xg-boost regression, knn, gbr, and lgbr. these algorithms were chosen because of their capacity to handle regression tasks involving nonlinear data, which is typically found in the dataset generated by hfss antenna simulations. after running antenna simulations, the dataset is generated which contains the resonance frequency, diameter of the circular slot of the patch, and diameter of the semi-circular slot of ground and return loss values. the s11 values are then predicted using various ml techniques. 592 r. jain, v. vikas thakare, p. k. singhal the rest of the article is organized as follows: section 2 details the antenna evolution and analysis of the proposed antenna. section 3 exhibits optimization through the use of ml models. section 4 evaluates performance using results. finally, section 5 presents the conclusions. 2. evolution and analysis of uwb antenna 2.1. antenna dimensions & evolution the antenna design evolution is derived in five iterations, along with the intermediate stages and geometry of the proposed antenna depicted in figs. 2 and 3, as well as the geometric parameters listed in table 1. it is composed of fr-4 (flame retardant and type 4) substrate and is 43mm x 40mm x 1.6mm. the thickness of the substrate is 1.6 mm, the dielectric constant is εr = 4.4, and the loss tangent is tan δ = 0.02 for all specified antenna design iterations. the first stage as illustrated in fig. 2, ant 1 is a standard circular patch antenna, the radius of the patch can be calculated using the following equation 1[14]. 1/2 2 1 ln 1.7726 2r f r h f f h   =     + +        (1) where, f = 8.791 ∙ 109 / (fr ∙ (εr )1/2), r = radius of circular patch, fr =resonant frequency, h=substrate height, εr =dielectric constant of the substrate. t o p v ie w b o tt o m v ie w (a) ant 1 (b) ant 2 (c) ant 3 (d) ant 4 fig. 2 antenna evolution in ant 2, two circular slots of diameter 7 mm are formed from the main circular radiating patch of diameter 15 mm to provide for a seamless transition of current from the transmission line to the radiating patch. ant 3 is formed by four patches of diameter 3.5 mm inside these two slots of 7mm diameter, followed by ant 4 additionally, two slots are created on the main enhancing circular microstrip patch antenna performance using machine learning models 593 patch, one at the top and one at the bottom, whose diameter is varied from 2.4mm to 4mm with a step size of 0.2mm to apply ml algorithms for optimization., ant 5 a semicircle slot with a diameter ranging from 0.1 to 3mm is produced in the ground plane, which is a defective ground structure (dgs) with dimensions of 10 mm by 40 mm (for optimization). t o p v ie w fig. 3 geometry of ant 5 (proposed antenna) 2 4 6 8 10 -40 -35 -30 -25 -20 -15 -10 -5 0 ant 1 ant 2 ant 3 ant 4 proposed r et u rn l o ss ( d b ) frequency (ghz) fig. 4 comparison of return loss for ant 1, ant 2, ant 3, ant 4 & ant 5 (proposed antenna) b o tt o m v ie w table 1 antenna dimensions parameters symbol value parameters symbol value diameter of main circular patch c1 15mm length of ground gl 10mm diameter of circular slot c2 7mm width of ground gw 40mm diameter of inner circle patch c3 3.5mm diameter of semi-circular slot at ground sc 1.3mm diameter of top & bottom circular slot c4 2.4mm substrate length sl 43mm feed line width fw 3mm substrate width sw 40mm feed line length fl 10mm fig. 4 represents the comparison of return loss for ant 1, ant 2, ant 3, ant 4 & ant 5 (proposed antenna). ant 1 is a simple circular patch antenna having a dual band from 2.4 ghz to 5.8ghz & 6ghz to 10.16ghz, resonating at 4.4ghz & 9ghz with -26db & 47db return loss respectively. further in the next modification i.e. ant 2, band 2.4 to 10.9ghz, giving ultra-wideband characteristics, resonating at 4.35 ghz & 8.9ghz with 33db & -27db return loss. in ant 3, three bands are there at 4.6ghz, 7ghz, 9ghz with 23db, -20db, & -32db return loss respectively. in ant 4, 4.6ghz, 7.07ghz & 9.05ghz with -30db, -24db & -30db return loss respectively. in the final design ant 5 which is 594 r. jain, v. vikas thakare, p. k. singhal the proposed antenna gives ultra wide band from 2.37ghz to 10.56ghz having multiband’s resonating at 4.6ghz, 6.6ghz, 9ghz & 10.3ghz with -34.26db, -34db, 24db & -31.46db return loss respectively. 3. optimization through machine learning models methodology the flowchart of optimizing antenna parameters through ml models is shown in fig. 5. fig. 5 methodology flowchart the first step represents the design and simulation of an antenna on hfss, further performance is checked and redesigned if required. the design methodology of the proposed uwb antenna in this work begins with the antenna design modification by conventional methods, in which the first antenna is designed and evaluated on the basis of return loss, and further modifications as mentioned in section 2 until we reach the proposed structure with good results, i.e. multiband along with uwb characteristics. now in the next step, by varying the diameter of the circular slot (c4) from 2.4mm to 4mm with a step size of 0.2mm and the semi-circular slot (sc) varied from 0.1mm to 3mm with a step size of 0.2mm, the dataset is generated. hfss was used to generate all possibilities that fit within the range of values set for each design parameter. this dataset, which contains 67650 records with 451 columns and 150 rows, is composed of the following features: frequency (freq in ghz), return loss (s11 in db), circular slot diameter (c4), and semi-circular diameter (sc). to apply ml methods, frequency, c4, sc will be treated as an independent variable and s11 as a dependent variable. the relationship between dependent (s11) and independent variables (c4, sc) is shown in fig. 6. the next step is to split the dataset into training and test sets. the typical practice is to randomly assign a certain percentage (e.g., 70-80%) of the data to the training and the enhancing circular microstrip patch antenna performance using machine learning models 595 remaining portion to the test. the randomization helps ensure the representativeness of both. in this work, 80% of the data is used for training. the training dataset is utilized to train ml models. the models learn patterns and relationships between the dependent & independent features during the training process. after training, the ml models are evaluated on the test data set. this allows for assessing their performance on unseen data. the model predictions on the test dataset are compared with the actual values to measure their accuracy and other relevant performance metrics. certain models for ml are trained and tested for accuracy and predictability using the dataset produced above. predictions made with ml take substantially less time and have far smaller margins of error. the best model is chosen based on having the highest rsquare score and the lowest mse value after the ml models have been trained using the dataset collected from the hfss. then, using that model, the s11 value for this dataset will be predicted. the parameters that produce the lowest s11 value will be chosen next. (a) (b) fig. 6 (a) the relationship between s11 and c4. (b) the relationship between s11 and sc. 4. result and discussion common performance metrics used to evaluate the accuracy and efficiency of machine learning models are the mse (mean squared error), r-square value, mae (mean absolute error), mape (mean absolute percentage error), fit time (in seconds), and prediction time (in seconds). table 2 shows the values estimated by several ml algorithms. the mean squared error (mse) is calculated as the average squared difference between predictions and actual values, lower mse indicates better accuracy, as shown in equation (2). the r-square value of the regression model shows how accurate it is, rsquare ranges from 0 to 1, with 1 indicating a perfect fit, as shown in equation (3). the mae is the average absolute difference between the predicted and actual values. it provides a measure of the model's prediction accuracy without considering the direction of the error, as shown in equation (4). the mape is a relative measure of the prediction accuracy and is calculated as the average percentage difference between the predicted and actual values. it is useful for interpreting the prediction errors in terms of their percentage relative to the actual values, as shown in equation (5). fit time is the time taken by the machine learning model to learn from the training data and build the internal representation. it 596 r. jain, v. vikas thakare, p. k. singhal indicates the training time required for the model to be ready for predictions. prediction time is the time taken by the model to make predictions on new data. it measures the efficiency of the model during the prediction phase [11, 15, 16]. 2 1 1 ˆ( ) n i i i mse y y n = = − (2) 2 2 1 2 1 ˆ( ) 1 ( ) n i ii n i ii y y r y y = = − = − −   (3) 1 1 ˆ( ) n i ii mae y y n = = − (4) 1 ˆ( )1 100 n i i i i y y mape n y= − =  (5) where n is the number of data points, yi is the actual value, ˆ iy is the predicted value, iy is the mean of actual values. table 2 compares mse, r-square, mae, mape, fit time, and prediction time for various models, illustrating that the knn model has the highest r-square value and the lowest mse, mae, mape, fit time, and prediction time, implying that it is the most accurate and fastest model among the models compared. random forest has the second highest r-square value, however, it takes significantly more time to train and test in comparison to other models. all models have an accuracy of more than 76%, five of them having an accuracy of more than 90% making them extremely useful, and the error is quite low. because knn is a non-parametric approach that finds a fixed number of training samples based on feature similarity, it outperforms the other methods [17]. table 2 comparison of mse, r-square, mae, mape, fit time & prediction time for different models model mse r-square value mae mape fit time (sec) prediction time (sec) decision tree 1.555 0.959 0.506 0.033 0.240 0.012 random forest 1.100 0.970 0.478 0.032 12.214 0.583 gradient boosting regression (gbr) 8.739 0.769 1.893 0.132 3.796 0.042 xg boost regression 2.782 0.927 0.953 0.065 2.088 0.028 knn 0.559 0.985 0.273 0.017 0.038 0.066 light gradient boosting regression (lgbr) 3.782 0.901 1.162 0.080 0.302 0.074 fig. 7 depicts the association between predicted and actual return loss values for various ml models such as decision tree, random forest, gbr, xg boost, knn and lgbr [1723] over a frequency range of 1 to 15 ghz. the close correlation indicates that the models learned the patterns and relationships in the data successfully, resulting in reliable predictions of the return loss. enhancing circular microstrip patch antenna performance using machine learning models 597 (a) (b) (c) (d) (e) (f) fig. 7 association between predicted and actual return loss values for (a) decision tree. (b) random forest. (c) gbr. (d) xg boost. (e) knn. (f) lgbr. the most accurate prediction is provided by knn. it performs better because it is a versatile non-parametric algorithm that can handle complex or unfamiliar data sets. its adaptability enables it to adapt to changing datasets by accommodating new or modified data points, eliminating the need for complete model retraining. s11 is now optimized with the help of the ml approach. when the circular slot is 3.8 mm and the semi-circular slot is 1.3 mm, predicted using ml approach, it gives us the minimum value for s11. using 598 r. jain, v. vikas thakare, p. k. singhal these optimized values for s11 and simulating on hfss with c4=3.8 mm and sc=1.3 mm, the results are excellent, saving a significant amount of time. uwb band of 2.37ghz to 10.72ghz having three bands resonating at 4.51ghz, 7.1ghz & 8.87ghz with return loss values of -43 db, -42.29db, -57.68db respectively, and one small band at 10.4ghz with return loss of -13.6db. hence, comparing the return loss of the proposed design (ant 5) using the conventional approach and the optimized design using the ml approach with optimized dimensions of c4=3.8 mm and sc=1.3 mm is shown in fig. 8. this illustrates that by employing this approach, minimum values of return loss may be estimated for a particular band, which is quite time-consuming if the conventional approach is followed. 2 4 6 8 10 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 proposed (ant 5, with dimensions listed in table 1) optimised values (c4=3.8 mm and sc=1.3 mm ) r et u rn l o ss ( d b ) frequency (ghz) fig. 8 comparison of return loss for proposed design using conventional approach and optimized design using ml to evaluate the accuracy of the knn model, new random design values c4=4.2mm and sc=1.3mm are being prepared and also fabricated as shown in fig. 9. the return loss comparison of predicted values from knn, simulated values from hfss, and measured values obtained from fabricated prototype antenna is shown in fig. 10. the close relationship demonstrates that the models generate accurate evaluations of return loss. as compared to conventional design approaches, this approach can save significant time and effort. enhancing circular microstrip patch antenna performance using machine learning models 599 fig. 8 fabricated antenna 2 4 6 8 10 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 knn predicted hfss simulated measured r et u rn l o ss ( d b ) frequency (ghz) fig. 9 return loss comparison of predicted values from knn, simulated values from hfss, and the fabricated prototype 5. conclusion in this work, a circular patch antenna is first designed and subsequently optimized using the ml technique. after antenna optimization with ml algorithms and testing, the frequency range is confirmed to be 2.37ghz to 10.72ghz, which is suitable for ultrawideband (uwb) applications. the six ml algorithms were used in this work decision tree, knn, random forest, gbr, lgbr, and xg-boost regression. with an accuracy rate of up to 98.5%, knn produces the best results. it performs better than traditional em simulators. ml-powered antenna design is an innovative approach that will continue to define the future of antenna technology, designers can use it to solve design challenges, increase performance, and accelerate the development of revolutionary antenna systems. the ongoing improvement of ml techniques will surely contribute to the future of 3d antenna design, allowing for the creation of highly efficient, compact, and flexible antennas for a wide range of applications. acknowledgment: the author would like to acknowledge p.k. singhal (mits, gwalior), v.v. thakare (mits, gwalior), and p. ranjan (abv-iiitm gwalior) for their invaluable contributions to this work. their advice, ideas, and guidance were essential to the successful completion of this work. special thanks must be given to p. ranjan for providing the essential resources, as well as p.k. singhal and v.v. thakare for their useful recommendations and feedback during the course of the work. this project would not have been achievable without their ongoing encouragement and support. references [1] d. ghosh, a. de, m. c. taylor, t. k. sarkar, m. c. wicks and e. l. mokole, "transmission and reception by ultra-wideband (uwb) antennas", ieee antennas propag. mag., vol. 48, no. 5, pp. 67-99, oct. 2006. [2] "revision of part 15 of the commission’s rules regarding ultra wideband transmission systems", federal communications commission website (www.fcc.gov), dec. 27, 2015. available at: https://www.fcc.gov/document/revision-part-15-commissions-rules-regarding-ultra-wideband-7. 600 r. jain, v. vikas thakare, p. k. singhal [3] x. l. liang, "ultra-wideband antenna and design", oct. 03, 2012. available at: https://www.intechopen.com/chapters/39710. [4] p. a. tirkas and c. a. balanis, "finite-difference time-domain method for antenna radiation", ieee trans. antennas propag., vol. 40, no. 3, pp. 334-340, mar. 1992. [5] j. l. volakis, j. l. volakis, a. chatterjee and l. c. kempel, finite element method for electromagnetics. ieee press, 1998. [6] t. sarkar, a. djordjevic and b. kolundzija, method of moments applied to antennas, 2000. [7] n. s. kumar and u. d. yalavarthi "a comprehensive review on machine learning based optimization algorithms for antenna design", j. phys.: conf. ser., vol. 1964, p. 062098, 2020. [8] j. nan, h. xie, m. gao, y. song and w. yang, "design of uwb antenna based on improved deep belief network and extreme learning machine surrogate models", ieee access, vol. 9, pp. 126541-126549, 2021. [9] y. sharma, h. h. zhang and h. xin, "machine learning techniques for optimizing design of double t-shaped monopole antenna", ieee trans. antennas propag., vol. 68, no. 7, pp. 5658-5663, jul. 2020. [10] h. m. e. misilmani and t. naous, "machine learning in antenna design: an overview on machine learning concept and algorithms", in proceedings of international conference on high performance computing & simulation (hpcs), dublin, ireland, 2019, pp. 600-607. [11] r. jain, p. ranjan, p. k. singhal and v. v. thakare, "estimation of s11 values of patch antenna using various machine learning models", in proceedings of ieee conference on interdisciplinary approaches in technology and management for social innovation (iatmsi), gwalior, india, 2022, pp. 1-4. [12] k. sharma and g. p. pandey, "efficient modelling of compact microstrip antenna using machine learning", aeu – int. j. electron. commun., vol. 135, p. 153739, jun. 2021. [13] p. ranjan, a. maurya, h. gupta, s. yadav and a. sharma, "ultra-wideband cpw fed band-notched monopole antenna optimization using machine learning", prog. electromagn. res. m, vol. 108, pp. 27-39, 2022. [14] c. a. balanis, antenna theory: analysis and design. john wiley & sons, 2016. [15] s. wiyono, d. s. wibowo, m. f. hidayatullah and d. dairoh, "comparative study of knn, svm and decision tree algorithm for student’s performance prediction", int. j. comput. sci. appl. math., vol. 6, no. 2, p. 50, aug. 2020. [16] a.-d. pham, n.-t. ngo, t. t. ha truong, n.-t. huynh and n.-s. truong, "predicting energy consumption in multiple buildings using machine learning for improving energy efficiency and sustainability", j. cleaner prod., vol. 260, p. 121082, jul. 2020. [17] z.-w. yuan and y.-h. wang, "research on k nearest neighbor non-parametric regression algorithm based on kd-tree and clustering analysis", in proceedings of the 4th international conference on computational and information sciences, chongqing, china, 2012, pp. 298-301. [18] s. pavithran, s. viswasom, s. k. s and a. j, "designing of a 5g multiband antenna using decision tree and random forest regression models", in proceedings of 8th international conference on signal processing and integrated networks (spin), noida, india, 2021, pp. 626-631. [19] n. kurniawati, d. novita nurmala putri and y. kurnia ningsih, "random forest regression for predicting metamaterial antenna parameters", in proceedings of the 2nd international conference on industrial electrical and electronics (iciee), lombok, indonesia, 2020, pp. 174-178. [20] w. t. li, h. s. tang, c. cui, y. q. hei and x. w. shi, "efficient online data-driven enhanced-xgboost method for antenna optimization", ieee trans. antennas propag., vol. 70, no. 7, pp. 4953–4964, jul. 2022. [21] l. cui, y. zhang, r. zhang and q. h. liu, "a modified efficient knn method for antenna optimization and design", ieee trans. antennas propag., vol. 68, no. 10, pp. 6858–6866, oct. 2020. [22] d. shi, c. lian, k. cui, y. chen and x. liu, "an intelligent antenna synthesis method based on machine learning", ieee trans. antennas propag., vol. 70, no. 7, pp. 4965-4976, jul. 2022. [23] m. xue, d. shi, y. he and c. li, "a novel intelligent antenna synthesis system using hybrid machine learning algorithms", in proceedings of the international symposium on electromagnetic compatibility emc europe, barcelona, spain, 2019, pp. 902-907. 12517 facta universitatis series: electronics and energetics vol. 37, no 3, september 2024, pp. 483 – 496 https://doi.org/10.2298/fuee2403483i © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper on the comparison of different serial concatenated schemes based on polar and ldpc codes fedor ivanov, aleksey kuvshinov hse university, russia orcid ids: fedor ivanov https://orcid.org/0000-0001-7869-9657 aleksey kuvshinov https://orcid.org/0009-0001-3850-0516 abstract. nowadays concatenated codes are actively developed for different applications of error-correcting theory. in this paper we propose a new method for constructing concatenated codes consisting of some outer error-correcting code and a particular designed inner low-density parity-check (ldpc) code. we consider polarization-adjusted convolutional (pac) code and ldpc code as outer code of suggested construction. a specialized optimization algorithm was developed to generate inner code with particular error-reducing properties. by using the woven codes decoder with this design, the complexity of the decoding procedure is reduced compared to traditional polar and ldpc codes decoders, while still providing error-correcting characteristics. additionally, we enhance the performance of our system by puncturing the encoded symbols. the resulting concatenated constructions outperform low-rate ldpc code from the 5g standard and polar code. furthermore, we demonstrate the performance of code with a special paritycheck matrix which consists of parity-check matrices of inner and outer codes from our proposed construction. key words: error correcting codes, ldpc, optimization of codes, pac codes, concatenated codes, error reducing regime 1. introduction to date the channel coding is an integral part of all communication systems. the errorcorrecting construction proposed in this paper is based on three techniques: concatenation of two codes with inner error-reducing one, optimization codes to each other and received february 16, 2024; revised may 06, 2024; accepted may 21, 2024 corresponding author: aleksey kuvshinov hse university, laboratory of the internet of things and cyber-physical systems, tallinskaya, st. 34, 123458 moscow, russia. e-mail: akuvshinov@hse.ru *an earlier version of this paper was presented at the 16th international conference on advanced technologies, systems and services in telecommunications (telsiks 2023), october 25-27, 2023, niš, serbia [1]. https://orcid.org/0000-0001-7869-9657 https://orcid.org/0009-0001-3850-0516 484 f. ivanov, a. kuvshinov concatenated decoder reducing the overall complexity. we applied these methods to lowdensity parity-check (ldpc) and polarization-adjusted convolutional (pac) codes. ldpc codes were introduced by r. w. gallager in 1962 [2] along with some decoding methods of such codes. however, active analysis of ldpc codes did not begin until after the publication of mackay’s work [3] in the late 1990s. currently, the most common method for constructing ldpc codes is based on the expanding a small core matrix, known as a base matrix. this is achieved by replacing each non-zero element with a circulant matrix. the base matrix can be obtained through density evolution or exhaustive search process [4]. once the base matrix has been determined, an extending algorithm such as ace [5] can be applied to obtain the parity-check matrix of the ldpc code. polar codes were proposed by arikan in [6] in 2008. arikan proved that such codes could achieve the capacity of any symmetric binary-input discrete memoryless channels utilizing the successive cancellation (sc) decoder with the code length going to infinity. the existing irrespective channels belong to two groups: less reliable and more reliable channels. information bits are transmitted by polar codes over reliable channels which have greater reliability. through the polarization procedure applied recursively in the polar encoding process, the channels are divided into two extreme groups: the noisy sub-channels and almost noisy-free sub-channels. the major task during polar codes’ development is choosing appropriate subsets of high reliable and low reliable sub-channels (information and frozen sets). pac codes were presented by arikan in 2019 as a polar coding scheme that improves the performance of the classic polar code [7]. pac codes differ from the polar ones in that a rate one convolutional code is applied before polar transform. according to [7], such an additional step reduces a capacity loss of sub-channels due to their non-fixed inputs in pac coding. several recent papers compare performance and complexity of application successive cancellation list (scl) and sequential decoders to pac codes [8],[9]. while offering comparable performance, scl has constant complexity with an advantage on low signal-to-noise (snr) ratios. the concept of integrating several codes into a single communication system was first proposed by forney in 1966 [10]. serial and parallel concatenated codes (cc) are the two main types of concatenated constructions. nowadays, the most significant and current issue is the selection of the corresponding component codes of concatenated scheme and their coordination with each other. several papers devoted to cc examine codes such as ldpc, polar or convolutional codes as components of construction. in such studies, the polar code component is typically decoded by belief propagation (bp) algorithm to obtain the soft output of the decoder. the authors of paper [11] use ldpc code as an outer component and polar code decoded by bp as an inner component of the construction. the same approach was utilized in papers [12], [13], where polar code is decoded by bp algorithm, which results in poor error-correcting performance of the entire scheme. another approach to constructing concatenated codes is to use inner code that improves the channel. the author of the work [14] considers outer high-rate polar code and inner low-density generator matrix (ldgm) code which is known as the code allowed to improve the channel. but non-optimized regular ldgm code and bp decoder of polar code are utilized in this work. sparse regression codes (saprcs), which are currently under active investigation for various scenarios [15], can be considered as candidates for inner error-reducing code. authors of the paper [16] extended the approach of [17], which on the comparison of different serial concatenated schemes based on polar and ldpc codes 485 combines inner ldpc code and outer staircase code, by applying a sparse regression scheme to ldpc code. results of [16] demonstrate a good error-reducing capabilities of the presented inner code while maintaining low complexity, which is important for future network generations that require low power consumption. in this paper, we examine a new efficient concatenated coding schemes which combine pac and ldpc codes through an optimization process. we propose a serial concatenated construction with permutation between code components, which differs from previous approaches in that it utilizes the inner ldpc code to enhance the communication channel for the outer decoder rather than attempting to directly decode the received word. to achieve this, we introduce an optimization algorithm that enhances error-reducing properties of the inner lpdc code, thereby improving the overall performance of the concatenated code with a fixed outer code. consequently, the inner ldpc code is used for error reducing and outer – for error correction. our research builds upon our previous work devoted to concatenated codes consisting of two ldpc codes [18]. in this paper we further develop this approach by improving its performance using certain methods and propose concatenated code that consists of an outer error-correcting pac code and inner error-reducing ldpc code. more precisely, we fix inner error reducing ldpc code and apply optimization algorithm to outer ldpc. furthermore, we demonstrate the performance of our construction with puncturing the parity-check symbols of outer code. besides this, we explore a parity-check matrix consisting of inner and outer codes’ parity-check matrices and decode such code by bp decoder of ldpc. additionally, we compare the complexities of two proposed concatenated solutions with classical decoders of ldpc and polar codes. finally, we present simulation results to compare the performance of our schemes and ldpc codes from the 5g standard. 2. code construction the proposed concatenated code consists of inner ci (ni, ki = no) error-reducing ldpc code and some outer error-correcting co (no = ki, ko) code. we denote the interleaver between components of cc by p. the inner ldpc code enhances transmission on bit level, decreasing bit error level for the outer decoder. let us first describe the encoding and decoding processes of the proposed coding scheme. a separate section is devoted to the description of a special soft output decoder of outer pac code. 2.1. encoding procedure the encoding algorithm of the proposed concatenated code is schematically illustrated in fig. 1. fig. 1 encoder of the proposed concatenated constriction 486 f. ivanov, a. kuvshinov the encoding process of our construction involves the following steps: 1. the information vector u = (u1, …, uko) is generated to be transmitted. 2. information vector u is encoded by outer co (no = ki, ko) code. 3. the codeword of outer code is interleaved by p: p(co). the length of p is no. 4. permuted outer p(co) codeword is encoded using inner ci (ni, ki = no) error reducing ldpc code. the structure of the presented concatenated code is based on the method of serial concatenation, but with added permutation between code components. the concept of permutation was derived from parallel concatenation technique. generally, such an encoder follows the same encoding procedure as that of woven codes proposed by s. host et al for convolutional codes [19]. a random permutation randomizes the output of the outer code, which leads to the independence of errors at the input of the outer decoder and, consequently, an improvement in the performance of the coding method. 2.2. decoding algorithm let us demonstrate the decoding process for the proposed concatenated schemes. we adopted the idea of the decoding algorithm from the paper [20] devoted to woven codes. this decoder is an iterative one, and, therefore, the output of one component of the decoder is used at the input of the other in the next iteration. for this reason, the component decoders in the suggested design should be soft-input soft-output (siso) decoders. calculation of the complexity of such a concatenated decoder with different code components is presented in 4th section. let us designate the outer and inner components of the decoder as decco and decci respectively. the vector of log-likelihood ratios (llrs) lch = (lch (1), lch (2), …, lch (ni)) calculated based on the values from the channel: lch (i)≜ ln pr(xi= 0|y i ) pr(xi=1 |y i ) (1) we denote the input vector of the concatenated decoding procedure as l1. the outputs of the outer and inner decoders are denoted as lout and lin. the decoding process utilizes the inverse permutation p-1 at each iteration. the following steps are included in each iteration of the decoding algorithm: 1. the input to the inner decoder is formed through concatenation of two vectors: l1=[lch+lout|lch], (2) where the left side of the concatenated vector represents the information part of the inner code, and the right side represents parity-check part. lout is the vector of extrinsics of outer code received on the previous iteration. it is worth noting that lout is a vector of zeros on the first iteration. 2. l1 is processed by inner decoder, and the llrs per information symbol are calculated: lin=decci (l1)-lout (3) 3. the outer decoder is applied to lin and, if this is not the last iteration, the llrs per code symbol are calculated: on the comparison of different serial concatenated schemes based on polar and ldpc codes 487 lout=p(dec co (p-1(l in ))-lin) (4) a significant benefit of the described decoding algorithm is a noticeable reduction in complexity compared to applying classic decoders of ldpc and polar codes. fourth section is devoted to this question. 3. soft successive cancellation list decoder of pac code the main problem with using polar codes (and, accordingly, pac codes) as components of concatenated constructions is lack of suitable soft-input soft-output decoding algorithms. classic scl algorithm is a hard decision decoder in fact. being a representative of sequential decoders, this algorithm demonstrates high variance of output llrs corresponding to the latest decoded symbols. consequently, conventional sequential decoder of polar codes like scl is not suitable for outer decoder of pac code in a concatenated scheme. the example of magnitudes of input/output llrs of scl decoder applying for pac codeword is presented in fig. 2. a large increase in llrs values can be found after using scl decoder. fig. 2 input/output llr values of (256,240) pac scl8 decoder, es/no = 3.6 db the main idea of most approaches of constructing siso decoder of polar codes is applying bp algorithm to graph representation of polar code. such a method results in poor performance and authors of [21] suggest a novel siso decoder of polar code which combines both scl and bp approaches to maintain performance of classic polar decoders with hard decisions. we utilize this solution in our concatenated decoder for pac code component. 488 f. ivanov, a. kuvshinov the soft scl algorithm used in our research is described in [21] in details. we only recap its main steps and features in this section. the soft scl decoder essentially comes down to three stages: 1. applying the classic log-based scl decoder to llr values from the channel. 2. sc decoder with only left node update step is applied to the same channel llrs, output of the previous step is taken as a frozen set of this sc decoder. 3. if the crc check is failed, then the current result of the decoding process is returned, else – bp is applied to the output of sc decoder step and the resulting vector is returned as soft output of the decoder. the main difference between presented decoding steps and proposed in [21] is verifying crc precoding before application bp algorithm. this additional step reduces the overall complexity and makes results more predictable. the use of the given algorithm results in observing reasonable output llr values and maintaining performance of the basic list decoder of pac code. fig. 3 demonstrates the input/output llrs of a soft scl decoder. the code parameters are the same as in fig. 2 except the additional crc-8 bits in the codeword of pac, as the described soft scl decoder requires crc checks, in contrast to classic scl decoder of pac codes. fig. 3 input/output llrs of (256,240+8) pac softscl8 decoder, es/no = 3.6 db 4. comparison of decoders’ complexity an important advantage of a proposed concatenated decoder is a noticeable reduction in complexity compared to applying classic decoders of ldpc and polar codes. fourth section is devoted to this question. on the comparison of different serial concatenated schemes based on polar and ldpc codes 489 let us compare the complexity of woven decoder applied to the proposed concatenated schemes (concatenation of two ldpc and concatenated code with outer pac and inner ldpc codes) with the complexity of bp decoder and scl decoder. the complexity of the classic bp decoder is equal to i∙nlogn, where i – number of iterations of bp and n − the length of the ldpc code. the complexity of the scl decoder is equal to l∙nlogn, where l – list size of the decoder and n − the length of the polar code. by comparison, the complexity c∑ of cc-decoding for the proposed combination of two ldpc is as follows: cς=s∙(io∙nologno+ii∙nilogni), (5) where s – number of iterations of woven-like decoder, ii, io – number of bp iterations of inner and outer ldpc decoders respectively, ni, no – the lengths of the inner and outer ldpc components of the code respectively. it is worth noting, that the overall reduction in complexity of cc-decoding of two serial concatenated ldpc codes is obtained until the condition that the overall number of bp iterations is held and explained by the division of complexity between component codes with a smaller code length. wherein, in the case of combination of pac and ldpc codes, a soft scl decoder is utilized as an outer decoder. it is clear from the description in [21], that its complexity is (l+1)∙nlogn since the complexity of additional steps takes calculations as an sc decoder. accordingly, the complexity of concatenated decoding for such a construction is as follows: cς=s∙((l+1)∙nologno+ii∙nilogni) (6) the gain from using woven decoder for different lengths of concatenated code with two ldpc compared to classic bp and scl decoders is shown in table 1 (ro – the rate of the outer code, ri – the rate of the inner code). the gain from using this approach to concatenation of pac and ldpc codes is presented in table 2. code parameters of cc were chosen to be similar to those used for the simulation results in 7th section. it can be found that the specified gain in complexity grows as the rate of the outer code increases (maintaining the overall cc rate). in the case of outer pac and inner ldpc codes, the number of iterations of cc decoder was chosen equal to 1, so we used a non-iterative version of woven decoder since, when observing the simulations, the performance of construction is not reduced. the list size of soft scl is equal to 4, the number of bp iterations for inner ldpc code was chosen 20. table 1 gain from using woven-like decoder (two ldpc) compared to bp50 and scl32 code parameters gain vs bp50, % gain vs scl32, % (8000,2000), ri=1/3, ro=3/4 35.0 -0.0098 (8000,2000), ri=1/2, ro=1/2 25.0 -14.2 (4000,1000), ri=1/3, ro=3/4 (4000,1000), ri=1/2, ro=1/2 36.0 27.0 -0.0007 -13.8 (500,125), ri=1/3, ro=3/4 36.4 0.5 (500,125), ri=1/2, ro=1/2 27.8 -12.8 490 f. ivanov, a. kuvshinov table 2 gain from using woven-like decoder (cc with pac and ldpc) compared to bp50 and scl32 code parameters gain vs bp50, % gain vs scl32, % (4000,1000), ri=8/30, ro=30/32 58.3 34.8 (4000,1000), ri=1/2, ro=1/2 56.3 31.8 (500,125), ri=8/30, ro=30/32 (500,125), ri=1/2, ro=1/2 58.4 56.5 35.0 32.0 5. optimization algorithm we propose a specific error-reducing ldpc code as an inner component in the concatenated code. an optimization process that modifies the base matrix of an inner ldpc code was proposed in [18] and is briefly described in this section. after extension the base matrix, the parity-check matrix of error reducing ldpc code is obtained. we also improve the error-correcting properties of the entire construction by applying optimization not only to the inner ldpc code, but also to the outer ldpc code, while fixing the optimized inner component. 5.1. optimization algorithm for inner ldpc code the goal of the suggested optimization algorithm discussed in this section is to find the base matrix of an inner ldpc code with the lowest possible signal-to-noise ratio (snr) where the target frame error rate (fer) value of the entire concatenated code is achieved. a detailed description of the suggested procedure can be found in [18], and here we demonstrate bird-view description. the proposed iterative optimization algorithm randomly selects and flips a certain number of positions in the inner code’s core matrix at each iteration. thereafter, the base matrix is extended to a full parity-check matrix of the inner code. the performance of the concatenated code consisting of new inner ldpc code with this modified parity-check matrix and the fixed outer pac/ldpc code is calculated in an awgn channel. finally, the process compares the snr value on which target fer is obtained with the one from the previous best result. if this value is lower than the previous one, the current base matrix is saved as the current best core matrix of inner code for the next iteration. the outer code is selected and fixed at the beginning of the described process. the number of flipped positions at one iteration increases during optimization algorithm to prevent the convergence to local minima. inner error reducing ldpc code improves the superchannel of our scheme in terms of bit error rate (ber). the fer characteristic of such code is very poor on about full snr range. this code reduces the number of bit errors, thereby improving the superchannel and, therefore, some chosen outer code can decode the received information. 5.2. optimization of outer ldpc code a potential advantage of a construction consisting of two ldpc codes over a concatenated scheme with inner ldpc code and outer pac code lies in the ability to apply the same optimization process not only to the inner ldpc code but also to the outer code. specifically, we fix previously optimized inner code in the concatenated code and on the comparison of different serial concatenated schemes based on polar and ldpc codes 491 implement the optimization algorithm for the outer ldpc code with the same target fer of the entire coding scheme. fig. 4 shows the comparison of the performance of a cc of length n=8840 and rate r≈1/4 through three phases of optimization: concatenated construction before optimization (simply the raw concatenation of ldpc codes from the 5g standard with the corresponding rates), concatenated construction following optimization of the inner code, concatenated construction following optimization both the inner and outer codes. fig. 4 three stages of optimization of the concatenated construction with two ldpc 6. concatenated code as ldpc in this section we demonstrate another approach of using the optimization and concatenation techniques. we propose a new parity-check matrix that is composed of optimized inner and outer parity-check matrices of ldpc codes from a concatenated code construction. the parity-check matrix of outer ldpc code is located at the top the suggested new matrix, the parity-check matrix of inner ldpc – at the bottom, with the remaining section filled with zeros. the ldpc code with the resulted parity-check matrix can be considered as a whole with a bp decoding algorithm at the receiver side. let us compare the performance of this solution decoded by a classical bp decoder, proposed concatenated code decoded using a woven-like decoding algorithm and ldpc code from the 5g standard with the same parameters (length and coding rate) in fig. 5. 492 f. ivanov, a. kuvshinov fig. 5 simulation results for n=8840 and r≈1/4 it can be noticed that the ldpc code using the composite parity-check matrix starts to outperform ldpc code from the 5g standard on eb/no above 0.4 db. a crucial observation is that the new code does not exhibit an error floor, unlike the 5g ldpc code. at the same time, concatenated code decoded using woven-like decoder demonstrates better performance and steeper slope of fer characteristic than code with composite parity-check matrix on eb/no levels above 0.15 db. the complexity of its concatenated decoder is 35% lower than that of the bp decoder using the same number of iterations, as calculated using formula in section 4. 7. simulation results in this section, we present simulation results that demonstrate the effectiveness of our proposed methods. the simulation setup that we used is as follows: ▪ awgn channel, bpsk modulation. ▪ for the classic ldpc codes, 50 iterations of the bp algorithm were used. for construction of two ldpc codes – 5 iterations were used for the concatenated iterative woven-like decoder, and 5 bp iterations were performed on the component decoders. therefore, the summary number of bp iterations for this concatenated decoder is 50. ▪ the ace algorithm was used as an outer ldpc code lifting method, and the lifting algorithm described in [22] was applied for the inner ldpc code. ▪ scl decoder with list size 32 was used for decoding classic polar code, and list size 4 was used for decoding pac code in concatenated construction. ▪ reed muller (rm) rate-profiling [23] was used as frozen set for polar code with middle code length and pac code in presented simulations. through multiple simulations and comparisons, we found that cc consisting of two ldpc is more effective at longer code lengths, while cc with outer pac code demonstrates better on the comparison of different serial concatenated schemes based on polar and ldpc codes 493 performance at short and middle code length. this fact can be explained by the similar behavior of ldpc and polar codes underlying our two constructions. in this way, we compare performance of the proposed concatenated codes with length n=500 with polar code and ldpc code from the 5g standard. after that, error-correcting performance of concatenated constructions with length n=4000 is demonstrated. these schemes are also compared with lpdc and polar code with corresponding code parameters. it is worth noting that the ratios between coding rates of inner and outer components in the suggested coding scheme were chosen experimentally from the point of view of better performance and lower decoding complexity. we perform a simulation of the initial proposed cc of two ldpc codes and the same concatenated scheme with puncturing of some code symbols of outer ldpc code. (the puncturing procedure consists in setting llrs from a certain pattern to zero at the receiver end. we perform this procedure in a similar way to that proposed in the 5g standard). concatenated schemes consisting of two ldpc codes have the following parameters: ▪ n=4420, r≈1/4, ri≈0.29, ro≈0.8 ▪ n=4320 with 100 punctured symbols, r=0.28, ri≈0.30, ro≈0.92 ▪ n=480 with 24 punctured symbols, r=1/4, ri≈0.36, ro≈0.77 concatenated construction consisting of outer pac code and inner error-reducing ldpc code considered in simulation results has following parameters: ▪ n=3840, r=1/4, ri=8/30, ro=30/32 ▪ n=480, r=1/4, ri=8/30, ro=30/32 5g nr ldpc code of rate r=1/4 and lengths n=480 and n=5120 was chosen for comparison with the developed constructions. moreover, we compare our concatenated codes with polar codes of rate r=1/4 and lengths n=512 and n=4096. in the first case rm rate-profiling was used. but as for the length of 4096, polar code constructed with rm has very poor performance. therefore, the gaussian approximation (ga) technique proposed in [24] was utilized to develop an information set of polar code for such length. it should be noted that concatenated code consisting of pac and ldpc has poor flexibility in code parameters (code length and rate) which is associated with the length of outer pac code limited to powers of 2. this leads to a limited set of lifting sizes of inner ldpc code. we selected the closest possible parameters to other considered codes to compare the numerical results taking into account the comparison in eb/no. we demonstrate the simulation results of the proposed coding methods, ldpc and polar codes of code length equal to 480 in fig. 6. we can note the superiority of construction with outer pac code to polar code both in error correcting properties (almost over the entire range of eb/no) and in complexity (gain is 35%, according to the tables in fourth section). at the same time, ldpc code with the same parameters outperforms concatenation of pac and ldpc, but it should be noticed that the decoder of the proposed construction has gain equals to 58.4% compared to bp50 decoder of ldpc code. concatenated code consisting of two ldpc has no noticeable performance advantage at these parameters, with a small gain in complexity. the simulation results for proposed concatenated codes, ldpc and polar codes with length 4000 are presented in fig. 7. 494 f. ivanov, a. kuvshinov fig. 6 simulation results for n=480 and r=1/4 fig. 7 simulation results for n=4000 and r≈1/4 as it can be found, the performance of cc with outer pac code and inner ldpc code is better than polar code in the eb/no range from 0.55 db and above. moreover, the gain in complexity for these parameters is 34.8%. on the comparison of different serial concatenated schemes based on polar and ldpc codes 495 the proposed construction consisting of two ldpc codes without puncturing outperforms the ldpc code from the 5g standard on eb/no above 0.9 db, while cc with outer puncturing demonstrates the same performance as 5g ldpc before eb/no of 0.6 db and after that the error probability of cc with puncturing is lower than the fer of 5g ldpc. construction with puncturing, as well as without it, has better error probability compared to polar code with noticeably gap despite 13.8% loss in complexity. in addition, both suggested concatenated constructions have a sharp slope of error correcting characteristic in contrast to polar code and have no error floor unlike ldpc. 8. conclusion our paper focuses on the development of serial concatenated code constructions based on pac and ldpc codes. each of this code, being a component of concatenated construction, serves a specific purpose in the entire concatenated system. the outer ldpc or pac code acts as error-correcting code, while the inner ldpc code becomes errorreducing code after a special optimization algorithm. this algorithm finds a new base matrix that achieves the target fer at the lowest possible snr. consequently, the inner code improves the transmission channel for the outer decoder of concatenated construction. we also applied the optimization process to the base matrix of outer code (in the case of concatenation of two ldpc codes), which made it possible to enhance the characteristics of our construction. the decoder of woven-like codes was utilized as the decoding algorithm of the proposed method. such a decoding method reduces the complexity of the proposed solutions significantly. the simulation results show that the error correcting properties of suggested concatenated codes are comparable to 5g ldpc codes and polar codes and are noticeably superior to the latter in some cases, while the concatenated decoder has less complexity. the main disadvantage of the explored method is the necessity of using an optimization algorithm when using new combinations of codes. additionally, proposed constructions demonstrate better performance mainly at low coding rates. in addition, we demonstrated a method for constructing ldpc codes using matrices of initial outer code of our construction and optimized inner code. the performance of such code outperforms ldpc from the 5g standard as well, but this method has a greater decoding complexity compared to concatenated decoder. the proposed concatenated schemes can be applied in the different low-rate scenarios such as massive machine-type communication (mmtc) and ultra-reliable low latency communication (urllc). for future research, we plan to explore concatenated schemes with inner sparc code and apply optimization and woven decoding techniques to different combinations with sparc code. sparc codes are considered as channel coding in multi-user communication scenarios as well, which can extend the application area of the considered constructions. moreover, we will explore the performance of the suggested methods with fading channel model for better match with realistic wireless systems. universal algorithms proposed in this research can be applied to various channel models and combinations of codes. acknowledgement: this research was funded by russian science foundation, project no 21-71-10113. 496 f. ivanov, a. kuvshinov references [1] f. ivanov, a. kuvshinov, "on the serial concatenation of ldpc codes", in proceedings of the 16th international conference on advanced technologies, systems and services in telecommunications (telsiks), niš, serbia, 2023, pp. 228–231. [2] r. gallager, "low-density parity-check codes", ire transactions on information theory, vol. 8, no. 1, pp. 21–28, jan. 1962. [3] d. j. c. mackay, "good error-correcting codes based on very sparse matrices", ieee transactions on information theory, vol. 45, no. 2, pp. 399–431, mar. 1999. [4] t. j. richardson and r. l. urbanke, "the capacity of low-density parity-check codes under messagepassing decoding", ieee transactions on information theory, vol. 47, no. 2, pp. 599–618, 2001. [5] t. tian, c. r. jones, j. d. villasenor, and r. d. wesel, "selective avoidance of cycles in irregular ldpc code construction", vol. 52, no. 8, pp. 1242–1247, aug. 2004. [6] e. arikan, "channel polarization: a method for constructing capacity-achieving codes for symmetric binary-input memoryless channels," ieee transactions on information theory, vol. 55, no. 7, pp. 3051– 3073, jul. 2009. [7] e. arıkan, "from sequential decoding to channel polarization and back again", arxiv preprint, arxiv:1908.09594, 2019. [8] m. rowshan, a. burg, and e. viterbo, "polarization-adjusted convolutional (pac) codes: sequential decoding vs list decoding", ieee transactions on vehicular technology, vol. 70, no. 2, pp. 1434–1447, feb. 2021. [9] h. yao, a. fazeli, a. vardy, "list decoding of arıkan’s pac codes", in proceedings of the 2020 ieee international symposium on information theory (isit), los angeles, ca, usa, 2020, pp. 443–448. [10] g. d. forney, jr., "concatenated codes", cambridge, ma: mit press, 1966. [11] s. m. abbas, y. fan, j. chen and c. -y. tsui, "concatenated ldpc-polar codes decoding through belief propagation", in proceedings of the ieee international symposium on circuits and systems (iscas), baltimore, md, usa, 2017, pp. 1–4. [12] x. wang, j. li, h. chang, and j. he, "optimization design of polar-ldpc concatenated scheme based on deep learning", computers & electrical engineering, vol. 84, pp. 106636–106636, jun. 2020. [13] x. zhang, s. chen, and y. liu, "irregular ldpc‐polar concatenation scheme with designed scaling factors", electronics letters, vol. 55, no. 1, pp. 57–59, jan. 2019. [14] b. duo, "polar coding schemes for cooperative transmission systems", 2015. [15] j. r. ebert, j.-f. chamberland, and k. r. narayanan, "on sparse regression ldpc codes", jun. 2023. [16] k. andreev, p. rybin, and a. frolov, "on the error-reducing properties of superposition codes", in proceedings of the xviii international symposium problems of redundancy in information and control systems (redundancy), moscow, russian federation, 2023, pp. 148–152. [17] m. barakatain and f. r. kschischang, "low-complexity concatenated ldpc-staircase codes", journal of lightwave technology, vol. 36, no. 12, pp. 2443–2449, jun. 2018. [18] f. ivanov, a. kuvshinov, "on the woven-like concatenation of ldpc codes", in proceedings of the ieee international multi-conference on engineering, computer and information sciences (sibircon), yekaterinburg, russian federation, 2022, pp. 190–194. [19] s. höst (host), r. johannesson, and v. v. zyablov, "a first encounter with binary woven convolutional codes", in proceedings of the 4th international symposium on communication theory and applications, lake district, united kingdom, 1997, pp. 13–18. [20] a. kreshchuk, i. zhilin, and v. zyablov, "on the performance of block woven codes constructions with row-wise permutations", in proceedings of the international castle meeting on coding theory and applications, cham, 2017, pp. 217–227. [21] l. xiang, y. liu, zeynep b. kaykac egilmez, r. g. maunder, and lajos hanzo, "soft list decoding of polar codes", ieee transactions on vehicular technology, vol. 69, no. 11, pp. 13921–13926, nov. 2020. [22] j.-f.cheng, robert j. mceliece, "some high-rate near capacity codecs for the gaussian channel", in proceedings of the allerton conference on communications, control and computing, university of illinois, 1996. [23] b. li, h. shen, d. tse, "a rm-polar codes", arxiv preprint, arxiv:1407.5483, 2014. [24] p. trifonov, "efficient design and decoding of polar codes", ieee transactions on communications, vol. 60, no. 11, pp. 3221–3227, nov. 2012. 13254 facta universitatis series: electronics and energetics vol. 38, no 4, december 2025, pp. 625 637 https://doi.org/10.2298/fuee2504625d © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design of low power current starved ring oscillators using modified particle swarm optimization sandeep kumar dash, bishnu prasad de, bhargav appasani, nirmal kumar rout school of electronics engineering, kalinga institute of industrial technology, bhubaneswar, odisha, india orcid ids: sandeep kumar dash https://orcid.org/0000-0002-7777-8289 bishnu prasad de https://orcid.org/0000-0002-1146-1692 bhargav appasani https://orcid.org/0000-0002-0878-7405 nirmal kumar rout https://orcid.org/0000-0003-1983-792x abstract. ring oscillators (ro) are widely used for clock generation in rf applications. design of ro is a very tedious process for rf ic designers using traditional methods like hand calculation or by simulator assistance. traditional evolutionary optimization techniques, such as particle swarm optimization (pso) can be utilized for the design of the ros. however, it shows limitations in convergence and stagnation. in this work to overcome these problems, pso with constriction factor and inertia weight approach (pso-cfiwa) is applied to design a current-starved ring oscillator (csro). the optimum size of the csro transistors is obtained from pso-cfiwa and designed in cadence spectre using gpdk 90nm technology. the objective of the csro design is to have a 2 ghz oscillation frequency with optimized phase noise, power consumption, and figure of merit (fom). the designed csro shows a 1.99963 ghz oscillation frequency, 348.48 µw power dissipation, –86.67 dbc/hz phase noise, and fom of – 157.25. the simulation results establish the effectiveness of pso-cfiwa with its counterparts in ro design. key words: ring oscillator, current starved ring oscillator, fom, phase noise, cadence 1. introduction ring oscillators (ro) are primarily used for clock generation, delay generation, and frequency synthesis for various radio frequency (rf) applications. the ro performance depends upon the frequency of oscillation, power dissipation, phase noise, area, and fom. the designing of ro circuits at rf is a very challenging task for the designers due to trade-offs between various performance parameters. for designing the ro, designers need received november 21, 2024; revised january 27, 2025 and may 15, 2025; accepted may 20, 2025 corresponding author: sandeep kumar dash school of electronics engineering, kalinga institute of industrial technology, bhubaneswar, odisha, india. e-mail: sandeepfet@kiit.ac.in https://orcid.org/0000-0002-7777-8289 https://orcid.org/0000-0002-1146-1692 https://orcid.org/0000-0002-1146-1692 https://orcid.org/0000-0002-0878-7405 https://orcid.org/0000-0003-1983-792x 626 s. kumar dash, b. prasad de, b. appasani, n. kumar rout to consider these performance metrics as a benchmark to obtain the size of transistors and bias the circuit. designers go through a time-consuming iterative manual process to obtain the proper size of the transistor to achieve target performance parameters. it was not always possible for designers to obtain the optimum results even after many design iterations. to overcome this problem, an evolutionary algorithm is used in [1] to design an operational transconductance amplifier and leap frog filter. the multi-objective direct (modirect) optimization technique is used for optimizing various design parameters. in [2], the multi-objective evolutionary algorithm nsgaii is used to design rf low noise amplifier and leapfrog filter. in [3], the design of a nine-stage cmos ro is reported with the help of cmode. the ro circuit is implemented for a 2 ghz oscillation frequency with minimum fom. in [4], nsga-ii is reported to optimize power dissipation and phase noise of five-stage cmos ro. four different heuristic algorithms are used in [5] to obtain the optimal channel width for the 3-stage cmos ro that consumes the lowest average power. the fuzzy-modified shuffled frog leaping algorithm gives a superior solution as compared to the genetic algorithm, fuzzy-ga, and modified shuffled frog leaping algorithm. in [6], nsga-ii is applied to minimize the phase noise and power dissipation of the five, seven, and eleven-stage cmos ro circuit. an intelligent sizing method is reported in [7] for the design of cmos ro. in [8], graphical optimization is proposed for the optimization of ro. a novel design method is proposed for the optimal design of current-starved vco [9]. in [10], the gravitational search algorithm is employed to design three vcos with the objective of minimizing power and phase noise. different vlsi circuits are optimally designed using different evolutionary techniques [11-21]. in [22], the design of ro is presented using the multi-objective binary cat swarm optimization (mobcso). in [23], five stage vco is designed in 45 nm technology using pso to optimize power consumption, phase noise and figure of merit (fom). in [24], 8-stage vco is designed with the help of differential evolution (de) and pso to optimize three performance parameters. but it shows convergence and stagnation problem. the contribution of the paper is the application of the modified version of pso, called pso-cfiwa [25] for the optimal design of csro circuits. nsga-ii has high computational cost due to pareto sorting and struggles with premature convergence, diversity maintenance, and scalability in high-dimensional problems. mobcso suffers from limited precision due to binary encoding, high computational overhead, slower convergence, and occasional sub-optimal solutions. momipo has complex implementation, faces convergence issues in constrained design spaces, lacks robustness across varying problems, and struggles to balance conflicting objectives. each algorithm requires further adaptations for efficient and robust ro optimization. the novelty of this article is the application of the state-of-the-art algorithm in finding the device sizes for the design of a csro. this work aims to enhance the design efficiency of the csro by leveraging the pso-cfiwa method to achieve better performance metrics. the remaining part of the paper is organized as follows. section 2 describes the performance parameters of csro. in section 3, the evolutionary technique pso-cfiwa is described for the design of a stage csro. in section 4, the simulation results are presented. finally, the paper has been concluded in section 5. design of low power current starved ring oscillators using modified particle swarm optimization 627 2. current starved ring oscillator the csro circuit can be designed by connecting an odd number of inverters in series as given in figure 1. the oscillation frequency (fosc) of a csro is expressed as: 1 2 oscf n = (1) where n represents the inverter stages and τ denotes the average propagation delay of each stage. the average power consumption of the csro circuit is given as: 2 avg tot dd oscp η n c v f= (2) where η varies between 0.7 to 0.9. the phase noise [9] of the csro circuit is represented as:   2 2 8 3 oscdd char fvkt l f p v f  =  (3) where char v v   = , v is the overdrive voltage, γ represents the body effect coefficient, t denotes the absolute temperature, k represents boltzmann constant, ∆f is the offset frequency, and γ = 2/3. the fom of the ro circuit [6] can be calculated as:         = mw p f δf δfl fom avg osc 1 log10 2 2 10 (4) the primary objective of the csro circuit is to obtain a 2 ghz frequency of oscillation with minimum power dissipation, phase noise, and fom. the following sizing constraints are considered for the design. max,min, nnn www  max,min, ppp www  ln = lp = l = 180 nm fig. 1 circuit diagram of the csro 628 s. kumar dash, b. prasad de, b. appasani, n. kumar rout 3. evolutionary algorithms employed pso and pso-cfiwa algorithms are described briefly. 3.1. pso particle swarm optimization (pso) is a versatile and robust population-based stochastic optimization method that operates with inherent parallelism. unlike traditional optimization techniques, pso can effectively handle objective functions that are non-differentiable. compared to genetic algorithms (ga) and simulated annealing, pso has a lower tendency to become trapped in local optima. originally introduced by kennedy et al. [26], pso is inspired by the coordinated movement of bird flocks. it simulates the way birds navigate through a multi-dimensional space to optimize a given objective function. each particle (representing a potential solution) keeps track of its own best-known position (pbest), based on its individual experience. additionally, each particle has access to the best-known position within the swarm (gbest), which is determined from the personal bests of all particles. the position of each particle is updated by considering: ▪ the gap between the particle's present location and the highest position it has individually reached. ▪ the gap between the particle's present location and the best position found by the entire group. the detailed description of pso is given in [26]. the velocities of the particle vectors are modified as: ( 1) 1 1 2 2( ) ( )k k k k k k i i i i iv w v c rand pbest x c rand gbest x+ =  +   − +   − (5) the velocity and position of the ith particle vector at the kth iteration is denoted as k i v and k ix respectively. the parameter w represents the weighting function and parameters c1 and c2 both represents positive weighting factors. the terms rand1 and rand2 are randomly generated numbers within the range [0,1]. additionally, k ipbest signifies the best position achieved by the ith particle up to iteration k, while kgbest denotes the best position identified by the entire swarm at the same iteration. the searching point is modified by: ( 1) ( 1)k k k i i ix x v+ += + (6) the flow chart of conventional pso is given in figure 2. design of low power current starved ring oscillators using modified particle swarm optimization 629 fig. 2 flowchart of pso 3.2. pso-cfiwa for pso-cfiwa [25], the velocity of (5) is changed in accordance with (7): 1 1 1 1 2 2( * * *( ) * *( )k k k k k i i i i iv cfa w v c rand pbest s c rand gbest s+ +=  + − + − (7) 630 s. kumar dash, b. prasad de, b. appasani, n. kumar rout normally, c1 = c2 = 1.5-2.05, and the constriction factor (cfa) is given in (8):  42 2 2 −−− =cfa (8) where φ = c1 + c2 and φ > 4. for c1 = c2 = 2.05, the calculated value of cfa = 0.73. the inertia weight (wk+1) at (k+1)th cycle is expressed in (9). 1 max min max max ( 1)k w w w w k k + − = −  + (9) where, max w = 1.0; min w = 0.4; max k = maximum number of iteration cycles. the parameters of pso-cfiwa are given in table 1. table 1 control parameters of pso-cfiwa parameters value population size 10 dimension 5 iteration cycles ( max k ) 500 c1 2.05 c2 2.05 φ 4.1 cfa 0.73 max w 1.0 min w 0.4 4. simulation results the thirteen-stage csro is designed in cadence suite with gpdk 90 nm technology. the width (w) and length (l) size of nmos and pmos transistors are obtained from the proposed pso-cfiwa optimization. the constraints for the csro are considered the same as in [9]. the sizing constraints and optimal sizing values obtained using pso-cfiwa for csro are provided in table 2. table 2 obtained transistor size for csro sizing parameter lower-upper limit optimized value wn,cs (nm) 1000-5000 1110 wp,cs (nm) 5000-20000 6370 wn (nm) 200-500 328 wp (nm) 400-1000 679 l (nm) 100-110 102.5 design of low power current starved ring oscillators using modified particle swarm optimization 631 the oscillation waveform of the csro at the output of the csro is depicted in figure 3. the output waveform of the csro is almost rail-to-rail with a 1.99 ghz frequency of oscillation. fig. 3 oscillation waveform of the csro the power consumption estimation waveform of csro is depicted in figure 4. the csro circuit consumes an average power of 348.48 µw. the phase noise plot of csro is depicted in figure 5. the designed circuit is having phase noise of 86.67 dbc/hz at 1 mhz offset frequency. fig. 4 power estimation of the csro 632 s. kumar dash, b. prasad de, b. appasani, n. kumar rout fig. 5 phase noise estimation of the csro figure 6 presents the influence of the control voltage on the oscillation frequency of the csro circuit. it is observed that the circuit initiates oscillation at a minimum control voltage of 0.1 v. furthermore, the effect of supply voltage variation on the oscillation frequency is illustrated in figure 7. a deviation of ±10% from the nominal supply voltage of 1.2 v results in a corresponding frequency variation, with the oscillation frequency ranging from 1.893 ghz to 2.06 ghz. fig. 6 oscillation frequency vs control voltage plot design of low power current starved ring oscillators using modified particle swarm optimization 633 fig. 7 oscillation frequency vs supply voltage plot figure 8 depicts about change in csro oscillation frequency due to temperature changes. the oscillation frequency of csro varies from 2.42 ghz to 1.56 ghz due to temperature changes from -25℃ to 100℃. the change in oscillation frequency due to different design processes is depicted in figure 9. the designed csro shows oscillation frequency of 1.29 ghz, 1.48 ghz, 1.99 ghz, 2.25 ghz, 2.76 ghz at process corners ss, sf, nn, fs and ff respectively. figure 7-9 establishes the design efficacy of the designed csro against pvt variations. fig. 8 temperature vs oscillation frequency plot 634 s. kumar dash, b. prasad de, b. appasani, n. kumar rout fig. 9 process vs oscillation frequency plot of the csro fig. 10 monte carlo plot of the designed csro the impact of mismatch and process variations on circuit performance was statistically evaluated using monte carlo (mc) simulation. for the mc simulation, 1000 samples were analyzed to ensure reliable statistical outcomes. figure 10 presents histograms illustrating the oscillation frequency distribution. the mean and standard deviation of the oscillation design of low power current starved ring oscillators using modified particle swarm optimization 635 frequency were observed to be 1.985 ghz and 26.35 mhz, respectively. the mc simulation results indicate that the performance parameters of the optimized csro circuit exhibit minimal sensitivity to mismatch and process variations. in table 3, a comparison of performance parameters is reported with other reported work. monte carlo results and results reported in table 2 prove the robustness of the designed csro circuit. the proposed pso-cfiwa produce better fom than [9, 20-22] for the design of csro. the proposed approach outperforms other methods in terms of solution quality, as shown in the comparative analysis within the paper. the ref [12] shows better fom than this work. mopso is better than pso-cfiwa for multi-objective optimization problems because it is specifically designed to handle conflicting objectives, maintain solution diversity, and provide a pareto front. table 3 comparison of performance matrices of csro. parameter idea [9] mopso [12] idea [18] [19] [20] [21] mobcso [22] pso [23] de [24] this work technology 90 nm 180 nm 90 nm 180 nm 180 nm 90 nm 90 nm 45 nm 180 nm 90 nm frequency of oscillation (ghz) 2.0009 1.906 2.048 2.87 1.825 2.4 2.005 1.047 0.104 1.999 average power consumption (µw) 765.64 108 1062.5 1336 1278 1540 78.5 1.787 26410 348.48 phase noise (dbc/hz) –88.33 –107.4 nr nr –85.37 –88.34 –86 –82.28 –129.01 –86.67 fom –155.48 –167.10 nr nr –149.53 –155.8 –149.06 nr nr –157.25 5. conclusion three key performance parameters of the current-starved ring oscillator (csro) were optimized to meet the specified target requirements using the particle swarm optimization with comprehensive fitness indicator weighted average (pso-cfiwa) approach. this optimization method was selected for its ability to balance multiple objectives effectively, leveraging its comprehensive fitness evaluation to achieve superior performance metrics. the csro circuit was designed using transistor dimensions derived from the pso-cfiwa optimization process, designed to attain a target oscillation frequency of 2 ghz. post-implementation, the circuit demonstrated an oscillation frequency of 1.999 ghz, with a power dissipation of 348.48 µw, phase noise of –86.67 dbc/hz at 1 mhz offset frequency, and an fom of –157.25. the improved fom highlights the effectiveness of pso-cfiwa in enhancing circuit performance by simultaneously optimizing multiple critical parameters. to ensure reliability and robustness, extensive simulations and analyses were conducted. monte carlo simulations were performed to study the effects of random mismatch and process variations on circuit performance. by incorporating a weighted average approach to balance competing objectives, pso-cfiwa efficiently navigates the design space to achieve optimal solutions. this makes it a valuable tool for designing high-performance circuits where multiple performance 636 s. kumar dash, b. prasad de, b. appasani, n. kumar rout trade-offs must be carefully managed. in conclusion, the pso-cfiwa-optimized csro circuit demonstrates exceptional performance, robustness, and reliability, setting a new benchmark for fom in oscillator design. the combination of advanced optimization techniques and rigorous validation establishes this approach as a powerful methodology for achieving high-performance electronic designs. the pso-cfiwa methodology can be extended to the design of other analog circuits, including operational amplifiers, filters, and similar applications. in recent years, several novel bio-inspired multi-objective optimization techniques have been introduced, which present an opportunity for further exploration. these methods could be applied to the design of the csro and used for comparative analysis against the performance metrics reported in this study, providing insights into their relative efficacy. references [1] j. t. biondi, c. ciccazzo, v. cutello, s. d’antona, g. nicosia and s. spinella, "multiobjective evolutionary algorithms and pattern search methods for circuit design problems", j. universal comput. sci., vol. 12, no. 4, pp. 432-449, 2006. [2] g. nicosia, s. rinaudo and e. sciacca, "an evolutionary algorithm based approach to robust analog circuit design using constrained multiobjective optimization", knowl.-based syst., vol. 21, pp.175-183, 2008. [3] p. k. rout and d. p. acharya, "design of cmos ring oscillator using cmode", in proceedings of international conference on energy, automation and signal, bhubaneswar, india, 2011, pp. 1-6. [4] p. k. rout, d. p. acharya and g. panda, "constrained multiobjective optimization based design of cmos ring oscillator", in proceedings of international conference on computer communication and informatics, coimbatore, india, 2014, pp. 1-5. [5] f. keivanian, "minimization of average power consumption in 3 stage cmos ring oscillator based on msfla, fuzzy-msfla, ga, and fuzzy-ga", int. j. comput. appl., vol. 104, no. 16, pp. 30-37, 2014. [6] p. k. rout and d. p. acharya, "fast physical design of cmos ros for optimal performance using constrained nsga-ii", aeu-int. j. electron. commun., vol. 69, no. 9, pp. 1233-1242, 2015. [7] a mohammadi, m. mohammadi and s. h. zahiri, "design of optimal cmos ring oscillator using an intelligent optimization tool", soft comput., vol. 22, pp. 8151-8166, 2018. [8] n. gargouri, d. ben issa, z. sakka, a. kachouri and m. samet, "design and optimization of differential ring oscillator for ir-uwb applications in 0.18 μm cmos technology", j. circuits, syst. comput., vol. 26, no. 5, pp. 1-15, 2017. [9] p. k. rout, d. p. acharya and g. panda, "a multiobjective optimization based fast and robust design methodology for low power and low phase noise current starved vco", ieee trans. semicond. manuf., vol. 27, no. 1, pp. 43-50, feb. 2014. [10] m. ghasemi, a. mahanipour and m. saneei, "fast optimization for vcos using gsa algorithm," in proceedings of iranian conference on electrical engineering (icee), mashhad, iran, 2018, pp. 315-319. [11] s. k. dash, b. p. de, p. k. samanta, b. appasani, r. kar, d. mandal and n. bizon, "optimal design of voltage reference circuit and ring oscillator circuit using multiobjective differential evolution algorithm", j. electr. comput. eng., vol. 2023, p. 7621594, pp. 1-11. 2023. [12] s. k. dash, b. p. de, r. das, p. k. samanta, w. bhowmik, r. kar, d. mandal and a bakshi, "optimal design of current starved oscillator using mopso", in proceedings of international conference on communication, circuits, and systems (ic3s), bhubaneswar, india, 2023, pp. 1-4. [13] r. das, b. p. de, s. k. dash, p. k. samanta, w. bhowmik, r. kar and d. mandal, "multi-objective optimization for optimal design of cmos ring oscillator", in proceedings of international conference on recent advances in electrical, electronics, ubiquitous communication, and computational intelligence (raeeucci), chennai, india, 2023, pp. 1-4. [14] s. ghosh, b. p. de, r. kar, d. mandal and a. k. mal, "optimal design of a 5.5-ghz low-power high-gain cmos lna using the flower pollination algorithm", j. comput. electron., vol. 18, pp. 737-747, 2019. design of low power current starved ring oscillators using modified particle swarm optimization 637 [15] s. ghosh, b. p. de, k. b. maji, r. kar, d. mandal and a. k. mal, "optimal design of ultra-low-power 2.4 ghz lna for ieee 802.15.4/bluetooth applications", j. circuits syst. comput., vol. 29, no. 16, pp. 1-19, 2020. [16] a. raj, s. majumder and g. p. mishra, "design of a cmos based ring vco using particle swarm optimisation", analog integr. circuits signal process., vol. 119, pp. 309-317, 2023. [17] p. r. castañeda-aviña, e. tlelo-cuautle, l.-g. de la fraga, "phase noise optimization of integrated ring voltage-controlled oscillators by metaheuristics", aims mathematics, vol. 7, no. 8, pp. 14826-14839, 2022. [18] p. k. rout, d. p. acharya, g. panda and d. nayak, "process corner variation aware design of low power current starved vco power", in proceedings of international conference on electronics and communication systems (icecs), coimbatore, india, 2014, pp. 1-4. [19] v. g. nasre and g. m. asutkar, "design of current starved voltage control oscillator with bandgap reference in 0.18μm cmos process", in proceedings of international conference on recent innovations in signal processing and embedded systems (rise), bhopal, india, 2017, pp. 375-380. [20] u. nanda, d. nayak, s. k. pattnaik, s. k. swain, s. m. biswal, b. biswal, "design and performance analysis of current starved voltage controlled oscillator", in microelectronics, electromagnetics and telecommunications. lecture notes in electrical engineering, vol 521, 2019, springer, singapore. [21] j. k. panigrahi, d. p. acharya and u. nanda, "performance analysis of dual threshold cmos based current starved voltage controlled oscillator a review," in proceedings of the 2nd international conference on artificial intelligence and signal processing (aisp), vijayawada, india, 2022, pp. 1-4. [22] r. das, et al., " multi-objective optimization for optimal design of cmos ring oscillator", in proceedings of international conference on recent advances in electrical, electronics, ubiquitous communication, and computational intelligence (raeeucci), 2023, pp. 1-4. [23] a. raj, s. majumder and g. p. mishra, " design of a cmos based ring vco using particle swarm optimisation", analog integr. circuits signal process., vol. 119, no. 2, pp. 309-317, 2024. [24] p. r. castañeda-aviña, e. tlelo-cuautle and l. g. de la fraga, "phase noise optimization of integrated ring voltage-controlled oscillators by metaheuristics", aims mathematics, vol. 7, no. 8, pp. 14826-14839, 2022. [25] d. chowdhury, b. p. de, s. ghosh, n. k. singh, r. kar and d mandal, "optimization of subthreshold parameters of graded-channel gate-stack double-gate (gc-gs-dg) mosfet using pso-cfiwa", in lecture notes in electrical engineering, vol. 904, springer, 2023. [26] j. kennedy and r. eberhart, "particle swarm optimization", in proceedings of ieee international conference on neural network, 1995, vol. 4, pp. 1942-1948. 12935 facta universitatis series: electronics and energetics vol. 38, no 4, december 2025, pp. 605 623 https://doi.org/10.2298/fuee2504605j © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper tlm modelling of a slotted wearable microstrip antenna under bending conditions* jugoslav j. joković1, tijana ž. dimitrijević1,2, aleksandar s. atanasković1, nebojša s. dončov1 1faculty of electronic engineering, university of niš, republic of serbia 2faculty of engineering, university of kragujevac, republic of serbia orcid ids: jugoslav j. joković https://orcid.org/0000-0002-4780-938x tijana ž. dimitrijević https://orcid.org/0000-0002-9744-8287 aleksandar s. atanasković https://orcid.org/0000-0002-9979-5995 nebojša s. dončov https://orcid.org/0000-0002-9057-6737 abstract. this paper investigates the potential of the transmission line matrix (tlm) method and highlights the efficiency of a conformal cylindrical mesh for analyzing the tunable capabilities of a wearable slotted antenna under bending conditions. various configurations of polygon-shaped and u-shaped slots inserted into the radiating patch of a rectangular antenna are considered to illustrate their tuning effects on antenna parameters. the cylindrical tlm approach is demonstrated to be particularly effective for the efficient and accurate analysis of a flexible slotted antenna attached to the human body, focusing on resonant frequencies and reflection coefficients under different bending angles. the simulated results confirm the consistency of frequency shifts caused by bending, while the cylindrical mesh provides precise analysis of the impact of slot shape and size on antenna performance. key words: slotted antenna, wearable antennas, antenna bending, transmission line modelling method 1. introduction wearable patch antennas represent basic components in systems for communication between a human body and the external world. integrating these antennas into fabrics enhances user safety, convenience, and operability, making them valuable in applications related to health monitoring and personal communications, including both on-body and off-body solutions [2,3]. different microstrip patch configurations and textile materials received august 23, 2024; revised november 29, 2024 and july 17, 2025; accepted july 17, 2025 corresponding author: jugoslav joković faculty of electronic engineering, university of niš, aleksandra medvedeva 4, niš, serbia e-mail: jugoslav.jokovic@elfak.ni.ac.rs *an earlier version of this paper was presented at the 16th international conference on advanced technologies, systems and services in telecommunications (telsiks 2023), october 25-27, 2023, niš, serbia [1] https://orcid.org/0000-0002-4780-938x https://orcid.org/0000-0002-9744-8287 https://orcid.org/0000-0002-9979-5995 https://orcid.org/0000-0002-9057-6737 606 j. joković, t. dimitrijević, a. atanasković, n. dončov were analysed and used to design and test the wearable antennas [4-7]. inserting differently shaped slots onto a radiated surface of a rectangular patch can improve antenna performances in terms of circular polarization, wideband and/or dual band use in many communication systems, such as space and military personal communications, firefighting, and rescue work [6-10]. generally, for on-body wearable electronic applications the main challenge is related to a flexibility of an antenna deployed on different parts on a human body (on-body antennas), either embedded into a human skin (implantable antennas) or clothing (textile antennas). since the antenna attached on the body will easily bend due to the human body structure and movement, details of the antenna parameter variations under the bending condition should be considered [2,3,11]. however, there are many challenges in antenna design arising from the close proximity of the human body, variations of the human body posture, and motions in everyday activities. due to interference effects between the body and the deformed antenna, many antenna parameters, such as resonant frequency, gain, radiation pattern, and polarization, could change. a trade-off between flexibility and performance stability under deformation and mutual interference has a great importance in providing a correct functioning of the antenna: the frequency and return loss in operating bands must be compliant with specifications, stable and predictable under deformations, and interference effect of components in close proximity to the antenna. to address these challenges, different types of numerical models of wearable antennas are usually used in design and testing. various tools based on full-wave numerical techniques such as finite-difference time-domain – fdtd [12], method of moments – mom [13], finite element method – fem [14], transmission line matrix tlm [15], can be used to study antenna parameters by generating geometrical models of antennas while taking into account dielectric characteristics of textile materials and human body tissues. advantages and disadvantageous of these methods have been reported so far showing their differences with respect to memory requirement and run-time, their modifications (e.g. from one domain to another) and enhancements (e.g. compact models). however, in general the choice of most optimal method depends on the nature of em problem that needs to be solved. in contrast to mom and fem that are integral frequency-domain methods, the fdtd and tlm belongs to the class of differential time-domain methods that are most suited for solving closed-boundary em problems. although fdtd method is more well-known, the tlm method offers some crucial advantages in certain complex problems. the em fields are co-located at the center of the tlm cell, making the tlm more naturally suited to the simulation of materials with different characteristics (including anisotropy). in addition, for the simulation of complex geometries, the mesh layout is simpler in the tlm method. it is also possible to operate on the em fields on the boundaries of the cell and it is straightforward, for example, to apply impedance boundary conditions. the tlm method based on rectangular grid have been applied to antenna design in various configurations, from simple rectangular patch on different substrates, to complex meander-lined design [16-18]. the tlm method based on cylindrical coordinates [19,20] is highlighted for its ability to accurately and efficiently model cylindrically bent antennas, providing fully conformal analyses of bending deformation [21,22]. advantages of this approach when it comes to modelling of bent antennas, with respect to the rectangular tlm approach that uses staircase approximation to represent curved surfaces, are demonstrated on the example of the rectangular patch antenna in [11]. a possibility of an accurate analysis of tlm modelling of slotted wearable microstrip antenna under bending conditions 607 the bending influence without approximating the radiated surface, using the same mesh regardless of the bending angle, is particularly highlighted. separating the bending influence from the influence of different mesh resolutions is crucial, as it prevents alterations in the radiated surface size, substrate thickness, coaxial feed position, and other factors important in the antenna design. antennas based on slotted patch configurations offer broadband and/or multi-band tunable capabilities, making them advantageous over traditional antennas without slots. however, designing slotted patch antennas involves complex considerations due to their nonlinear and frequently non-unique nature, and, therefore time consuming procedures have to be used. the theory and design rules are not simple; they can be based on mathematics, and/or can be synthesized from experiments and physical insight, as well as from detailed numerical analyses. with using these mechanisms, the different shape slots can be synthesized and give satisfied results in terms of antenna performance improving [4-10]. however, this complexity necessitates precise modeling and intricate design rules, as small changes in slot dimensions can significantly affect antenna parameters. simulations using methods like fdtd show that the slotted antenna is frequencyreconfigurable capable of shifting its operating frequency depending of slot dimension, with the radiation pattern essentially unaffected by the frequency tuning [5]. the analysis of circularly polarized patch antennas, configurations with u-slot and e-slot, have confirmed the modifications of these two antennas with optimal position and size of slot configuration affects to better axial ratio and cross-polarization performance compared to conventional antenna design [6]. in addition, a wideband patch antenna can be designed for dualand multi-band application by cutting u-slots on the patch [7]. also, by optimizing the e-slot length, width, and position, a wide-band mechanism with more than 30% bandwidth of single-patch antenna can be provided [8]. the configuration based on polygon shaped slot incorporated in rectangular patch is used for dual-band satellite applications like iridium and gps, with potential integration of the developed antenna solution into clothing [9]. as a result, if the rectangular mesh is used for modelling of the slotted wearable antenna the mesh resolution would be significantly increased in order to meet specific physical solution requirements that include keeping the constant slot dimension and position under different bending angles. the required simulation time may be reduced, if a model can be found to provide initial solution which is adaptive to the different situation in terms of bending. however, the set of effective parameters for adjustments in the model has to be small to ensure rapid iteration and conformal analyses. understanding and applying these principles can help in modelling of slotted patch antennas that meet specific performance requirements under bending while managing model complexity and design cost. this paper focuses on possibilities of the cylindrical tlm method to analyze a textile bent antenna with different shapes of slots inserted into the radiated patch. two models of the rectangular patch antenna containing polygon-shaped and u-shaped slots of varying dimensions within the radiated patch which is placed on a human tissue are considered, as presented in fig.1. the antenna model with the octagon-shaped slots that has been already presented in [1] is extended introducing u-shaped slot configuration. the paper provides more detailed analysis of results in terms of simultaneous considering both the influence of different slot size and the influence of different bending angle to antenna parameters. this paper also explains all the issues relevant to the cylindrical mesh used for the modelling which is crucial in ensuring reliable results. for verification 608 j. joković, t. dimitrijević, a. atanasković, n. dončov purpose, results of the flat antenna are compared with corresponding results obtained by the rectangular mesh, for both considered slot configurations. 2. tlm model of wearable slotted antenna under bending the tlm numerical method is used to model wearable slotted antennas with the possibility of bending over the cylinder. this method, which is generally convenient for solving different electromagnetic (em) problems in the time-domain, uses the equivalences between maxwell's equations and the voltages and currents propagation along transmission lines. em wave propagation is modelled by using a network of interconnected nodes, while taking into account discontinuities and interactions with different materials [15]. (a) (b) fig.1 a wearable antenna with an: (a) octagon-shaped slot [1], (b) u-shaped slot tlm modelling of slotted wearable microstrip antenna under bending conditions 609 while the tlm method was initially developed in a cartesian grid [15], it has been found that for structures containing cylindrical or circular surfaces, the tlm method based on the cylindrical mesh is more convenient and efficient [19-23]. adaptation of the tlm method to the cylindrical grid requested two main iterative procedures of the tlm algorithm: scattering and connection, to be adjusted to the orthogonal polar mesh and to be modified to account for excitation, boundaries, and inhomogeneous medium and losses [19,20,23]. the capability and computational efficiency of the tlm method, using a compact wire model aligned with the axial direction of the cylindrical grid, are demonstrated in the case of a coaxially fed patch-ring antenna [20]. further adaptation included implementation of the compact wire model [18,21,22] facilitating the representation of the wires placed along a radial direction which enabled, for instance, modeling of a coaxial feed placed along the radial direction, as it is the case with a rectangular patch antenna bent over a cylinder investigating here [21,22]. this required appropriate adjustments to the connection procedure in form of an additional connecting procedure for wire segments located along a radial direction, where impedances of link and stub lines, embedded into the mesh to account for the wire, are different for neighboring nodes [21,22]. when a wearable antenna model having a possibility of bending over a cylinder is considered, a computational box should be defined as a part of cylinder rather than a whole cylinder to reduce memory requirements. note that the patch antenna dimensions are much smaller than the radius of the surrounding cylinder defined via the bending angle, meaning that the antenna is located far away from the center of the cylinder, so the usage of the whole cylinder as the computational box would be a memory consuming. to address this, the tlm algorithm was adjusted to allow for setting up boundary conditions along the angular directions, enabling a more efficient representation of the modeling space as a part of a cylinder. this adjustment also involved defining the boundary condition on the inner surface of the computational box along the radial direction, instead of defining the central node which must be used in the case of a completely cylindrically shaped computational box. this adaptation has allowed for more efficient modeling of the wearable antenna which can bent over a cylinder [21,22]. the tlm model of the wearable antenna implies description of the metallic layers of the antenna, the radiated patch and the ground plane, as the perfect electrical conductor (pec). in case of the radiated patch containing slots the cells representing slots should be excluded from the boundary conditions. this allows for the exchange of pulses with neighboring cells between the upper side of the substrate and the space above the antenna. to maintain a constant surface value of metallic parts and slots when the antenna is bent, which directly affects the antenna resonant frequency, a mesh resolution in the angular direction of individual regions is fine-tuned depending on the bending angle. this ensures consistency in sense that the number of cells in the specific region remains unchanged regardless of the bending angle, enabling accurate representation of the slotted antenna dimensions and reliable analysis under the bending conditions. an orthogonal polar network used for modelling of a wearable patch antenna model is presented in fig. 2, showing a space discretization within the section of a cylinder in r-φ plane. the presented cross-section of the patch antenna also illustrates the correction of the cell dimensions in case of bending so that dimensions of the metallic surfaces and slots remain constant. actually, mesh resolution is determined in two regions with slightly different values along the angular direction: 610 j. joković, t. dimitrijević, a. atanasković, n. dončov (1) δθpatch defined by the bending angle 2θ in respect to the length of the patch l (2θ = l / (r+h) = δθpatch*ncells(patch)), where ncells(patch) is a number of cells corresponding to the length of radiated patch, and (2) δθsub determined according to the condition that the ground length l remains constant under bending (l =r (2θ + δθsub * (ncells(ground) ncells(patch))), where ncells(ground) is a total number of cells corresponding to the length of ground plane. fig.2 space discretization in r-φ plane in a wearable antenna model the in-house tlmcyl solver [20-23] has been used to analyze an impact of the bending on the performances of wearable slotted antenna consisting of the rectangular radiated patch with dimensions w×l = (50×39.5) mm, placed on the substrate, and the ground plane of dimensions w×l = (100×100) mm [11,21,22]. the antenna is realized on the substrate of the relative permittivity εr = 2.1 – j 0.001 (loss tangent σ = 0.00048) and the height h = 2 mm, and it is bent over a part of a cylinder. a coaxial feed with an inner conductor radius of 0.1 mm, connecting the ground plane to the patch, is positioned 11.5 mm from the patch edge to provide impedance matching with the antenna [21,22]. in the considered model, the muscle tissue of the permittivity 52.671 – j 13 (loss tangent σ = 0.24682) [3,21], and thickness 35 mm is placed beneath the antenna. тhe reference results of no-slotted antenna were from [21], where the tissue was modeled on the same manner, as homogeneous region with the characteristics of the muscle tissue in terms of permittivity in the complete space under the antenna. since the antennas were analyzed with a metal ground plane, the inclusion of tissue in the model does not cause significant differences, as confirmed by the results of the rectangular antenna modeling [21,22]. in this particular case, the model included one layer of muscle tissue in order to present the possibility of modeling the influence of the body, which would certainly have greater significance when the antenna structure is different in terms of the ground plane. the cylindrical model is generally well-suited for representing real parts of the human tlm modelling of slotted wearable microstrip antenna under bending conditions 611 body, such as the arm, leg, and torso, as a multi-layered structure (skin, fat, muscle, and bone), whose effects can be analyzed in antenna configurations with varying radiation characteristics. table 1 presents computational mesh parameters, specifically cell size and the number of cells divided by axis relevant to a cylindrical coordinate system, which are used for modeling of slotted patch antennas on a muscle tissue. since the patch antenna is considered as an open problem, an appropriate extension around the physical antenna structure is included to form a computational box (represented as padding in the table 1) allowing for the adequate representation of the antenna surroundings, necessary for the proper capturing of radiation and calculation of the antenna parameters [21,22]. as can be seen, the mesh resolution in the substrate is 1 mm while in other regions the cell size is set to meet time synchronization demands [15]. note that the same cell size is used for the flat case antenna modeling in a rectangular tlm model, so the total number of cells is equal to presented here for the cylindrical model. when introducing slots, a defined mesh is completely the same, since the metallic layers are modelled as imprinted onto the substrate via internal boundary conditions (pec, γ=-1), while the cells corresponding to the slots are excluded from defining internal boundary conditions allowing a regular connection and an impulse exchange between neighbouring cells representing the substrate and the air. in this paper, two slot configurations inserted onto the radiated patch are considered to achieve the tuning effect, as shown in fig.3: (a) octagon-shaped slot composed from square unit elements characterized by parameter s, (b) u-shaped slot with dimensions characterized by parameters s1, s2 and d. table 1 computational mesh parameters in cylindrical tlm model of slotted wearable antenna under bending axis medium permittivitty number of cells resolution/cell size r-axis (height) muscle 52.67-j13 175 ~0.2 mm substrate 2.1-j0.001 2 1 mm air 1 28 1.45 mm -axis (length) padding 1 28 (r+h)δθpadd =1.45 mm substrate 2.1-j0.001 30 δθsub=((l/r l/(r+h))/60, rδθsub=1.01 mm substrate/patch 2.1-j0.001 39 δθpatch=(l/(r+h))/39, (r+h)δθpatch=1.01 mm substrate 2.1-j0.001 30 δθsub=((l/r l/(r+h))/60, rδθsub =1.01 mm padding 1 28 (r+h)δθpadd =1.45 mm z-axis (width) padding 1 28 1.45 mm substrate 2.1-j0.001 25 1 mm substrate/patch 2.1-j0.001 49 1.02 mm substrate 2.1-j0.001 25 1 mm padding 1 28 1.45 mm 612 j. joković, t. dimitrijević, a. atanasković, n. dončov (a) (b) fig. 3 geometry of the antenna element with slot (a) octagon-shaped (b) u-shaped 3. simulation results and analyses simulations using the tlm method are carried out to analyze the influence of the bending on the parameters of slotted wearable antennas. this analysis included both flat and bent antennas with bending angles of 25 and 50 degrees. results for the flat antenna obtained by the cylindrical and the rectangular tlm mesh, with a 1.0 mm cell size, are compared to verify the accuracy and consistency of the cylindrical tlm method when analysis of slotted antenna parameters is concerned. the comparison aimed to assess the effectiveness of cylindrical tlm model in obtaining the reflection coefficient under flat antenna conditions, providing valuable insights into their applicability for further analysis under bending conditions. in case of the flat antenna model in the cylindrical grid, a very small bending angle of 0.1 degrees is applied, with equivalent radius of the cylinder satisfying the condition r>>l (about 500 times) [21,22]. this small angle applied to the antenna model in the cylindrical grid effectively rendered the patch in plane, allowing it to be considered flat for the purposes of the analysis. the applicability a cylindrical mesh with almost no curvatures to model flat antenna structures has been confirmed in case of a rectangular patch antenna (without slot) [21,22]. as presented in fig.4, in considered range up to 4.5 ghz that covers two resonances, the values of resonances frequencies 2.444 ghz and 3.965 ghz, in respect to the corresponding results based on the rectangular mesh 2.473 ghz and 4.022 ghz, have obtained with small relative errors of 1.17%, and 1.42%, respectively. however, differences in use of rectangular and cylindrical tlm approach for analysis of bent antennas are attributed to the rectangular model that introduces the approximation of curved surfaces, affecting the antenna parameters differently depending on the mesh resolution [21,22]. while the rectangular tlm method requires a fine mesh to reduce approximation errors and provide accurate results regarding the bending influence, the cylindrical approach, using the same mesh resolution as in the flat antenna case, gives reliable results of the frequency shift due to the bending since the mesh consistency is ensured for different angles. fig.5 presents the results for the bent no-slotted antenna obtained by the cylindrical mesh in the range with two resonances. it can be seen that a larger bending angle results in a larger resonant frequency shifting. also, a difference can tlm modelling of slotted wearable microstrip antenna under bending conditions 613 be observed in terms of a greater effect of bending on frequency shift at the first resonance than at the second one. fig. 4 the reflection coefficient of the rectangular patch antenna (without slot) for the flat case fig. 5 the reflection coefficient of the rectangular patch antenna (without slot) under the bending 614 j. joković, t. dimitrijević, a. atanasković, n. dončov 2.1. a patch antenna with a octagon-shaped slot first antenna model with different dimensions of octagon-shaped slot, as shown in fig 3(a), is designed using the tlm cylindrical mesh using the 1.0 mm cell size. the octagon-shaped slot with two different dimensions of a unit square element s = 3 mm and s = 5 mm is embedded into the radiated patch surface. to verify the model, comparison of simulated results, representing the reflection coefficient obtained by the cylindrical and the rectangular tlm mesh, for the cases of a flat antenna with a octagon slot, are shown in fig.6. comparison of resonant frequencies is presented in table 2. there is a good agreement between results reached via the cylindrical mesh and the corresponding rectangular mesh results. moreover, resonant frequency tuning by changing the slot dimensions is illustrated. table 2 comparison of results of resonant frequencies for the flat case with an octagonshaped slot consisted of 5 square elements of dimension s octagon slot size resonant frequencies [ghz] relative error cylindrical tlm rectangular tlm 2.374 2.403 1.19 % s = 3 mm 3.975 4.038 1.52 % 2.226 2.254 1.23 % s = 5 mm 3.959 4.029 1.73 % in order to investigate the influence of the bending on antenna parameters, the slotted antenna is bent over a part of cylinder to achieve the bending angles of 25 and 50 degrees. fig.7 shows simulated results obtained for two different bending angles compared with the flat case. as can be seen, the first resonance is significantly more affected than the second one when the antenna is bent, with the frequency going up with an increase of the bending angle, while the second resonance remains almost the same. fig.8 presents a summary how introducing the slot and the slot size affects antenna parameters under flat or bending conditions. тhe influence of the octagon-shaped slot is seen in the shifting of frequencies to lower values. furthermore, increasing the size of the slot additionally reduces the frequencies. note that these affects are much more pronounced for the first resonance. finally, there is an agreement between the resonant frequency and reflection coefficient values with the corresponding results reached via the rectangular mesh for the case of the flat antenna. in addition, the antenna radiation patterns at the frequency of the first resonance for both considered cases of octagon slot dimensions, compared to the no-slotted antenna, are plotted in fig. 9. it can be observed that inserting an octagon slot in the antenna does not cause significant changes in the radiation patterns compared to the no-slot case. also, the back region of the slotted antenna's radiation pattern shows an increase in gain with increasing slot dimension. tlm modelling of slotted wearable microstrip antenna under bending conditions 615 (a) (b) fig. 6 the reflection coefficient of the slotted patch antenna for the flat case with an octagon-shaped slot consisted of 5 square elements of dimension s (a) 3 mm, (b) 5 mm. 616 j. joković, t. dimitrijević, a. atanasković, n. dončov (a) (b) fig. 7 the reflection coefficient of the slotted patch antenna under the bending for the octagon-shaped slot consisted of 5 square elements of dimensions (a) s = 3 mm, (b) s = 5 mm. tlm modelling of slotted wearable microstrip antenna under bending conditions 617 fig. 8 the antenna parameters versus bending angle for different octagon-slot dimensions. (a) (b) fig. 9 comparison of the radiation intensity of the slotted antenna with different octagon slot dimensions and the no-slotted antenna in the cross-section along (a) the r–φ plane (e-plane) and (b) the r–z plane (h-plane). 618 j. joković, t. dimitrijević, a. atanasković, n. dončov 2.2. a patch antenna with an u-shaped slot another antenna structure considered here contains the u-slotted patch geometry shown in fig 3(b). the tlm method based on the cylindrical mesh with 1.0 mm cell size is used applied for antenna modelling. initially, the antenna model with slot dimensions s1 = s2 = 15mm, d = 1mm, is considered. after that, the size of the slot is increased by d = 2mm toward the inside of the u-shaped slot by maintaining constant values of s1 = s2 = 15mm. fig.10 shows the comparison of reflection coefficient obtained by the cylindrical and the rectangular grid, in cases of the flat antenna with embedded u-slot configurations. a good agreement of the results obtained by applying two different meshes is achieved. the corresponding results of resonant frequencies compared in terms of accuracy are presented in table 3. also, as it is shown from fig.10, the resonant frequency, as well as the s11 parameter is changed due to variations of the u-slot dimensions. simulated results for considered u-slotted patch configurations, showing the effect of bending on the resonant frequencies, are presented in fig.11. as expected, increasing the bending angle makes resonant frequencies to rise. also, there is a greater effect of the bending on the first resonance than on the second one for the bent antenna. table 3 comparison of results of resonant frequencies for the flat case with an u-slotted patch antenna for the flat case with slot dimensions s1 = s2 = 15 mm and d u slot size resonant frequencies [ghz] relative error cylindrical tlm rectangular tlm 2.897 2.970 2.44 % d = 1 mm 4.040 4.125 2.04 % 3.010 3.090 2.57 % d = 2 mm 4.069 4.150 1.94 % fig.12 shows a review of the bending influence on parameters of u-shaped slotted antenna, for bending angles of 25 and 50 degrees, together with a flat case antenna, and a comparison with the rectangular model results. in contrast to the octagon-shaped slot, it can be concluded that the u slot size affects both frequencies to rise in respect to rectangular antenna. the radiation patterns for the u-shaped slotted antenna dimensions are compared to the antenna without slot in fig. 13. in comparison with the octagon slot, it can be seen that the radiation pattern is more significantly affected when the u-shaped slot is inserted. the plots show that the pattern becomes broader as the slot dimension increases, along with a slight decrease in gain in the main lobe. on the other hand, the back region of the radiation pattern shows an increase in gain compared to the no-slotted antenna. this decrease in front-to-back ratio may be of interest in bme applications, as it indicates reduced anisotropy in radiation patterns when the antenna is applied to dynamic bodies or objects, as well as in antenna-body interactions. tlm modelling of slotted wearable microstrip antenna under bending conditions 619 (a) (b) fig. 10 the reflection coefficient of the u-slotted patch antenna for the flat case with slot dimensions s1 = s2 = 15 mm and (a) d = 1mm, (b) d = 2mm 620 j. joković, t. dimitrijević, a. atanasković, n. dončov (a) (b) fig. 11 the reflection coefficient of the u-slotted patch antenna for the bent antenna with slot dimensions s1 = s2 = 15 mm and (a) d = 1mm, (b) d = 2mm tlm modelling of slotted wearable microstrip antenna under bending conditions 621 fig. 12 the antenna parameters versus bending angle for different u-slot dimensions (a) (b) fig. 13 comparison of the radiation intensity of the antenna with u-slot for different dimensions with the no-slotted antenna, in cross-section along (a) r-φ plane (e-plane), and (b) in r-z plane (h-plane). 622 j. joković, t. dimitrijević, a. atanasković, n. dončov 4. conclusion this paper demonstrates the capabilities of the cylindrical tlm solver for analyzing wearable patch antennas featuring radiating patches with complex geometries, including polygon-shaped and u-shaped slots. model validation is carried out for the flat antenna case by comparing the results with those obtained using a rectangular tlm mesh. by illustrating the effects of slot shape and dimensions on the shifting of resonant frequencies, as well as changes in the reflection coefficient and radiation patterns, the presented results confirm the importance of accurate slot modeling. the slotted antenna model, based on a cylindrical mesh conformal to various bending angles, enables comprehensive and precise analysis of the influence of slot shape and dimensions on resonant behavior, while also incorporating the effects of antenna bending. limitations of the model, related to representing slot shapes and dimensions in accordance with the cell network resolution, can be addressed through the introduction of compact slot models, which will be explored in future work. acknowledgement: this work has been supported by the ministry of science, technological development and innovation of the republic of serbia [grant number 451-03-137/2025-03/ 200102]. references [1] j. jokovic, t. dimitrijevic, a. atanaskovic and n. doncov, "wearable slotted antenna modelled by cylindrical tlm method", in proceedings of the 16th international conference on advanced technologies, systems and services in telecommunications (telsiks), niš, serbia, pp. 360-361, 2023. [2] h. yang and x. liu, "wearable dual-band and dual-polarized textile antenna for onand off-body communications", ieee antennas wireless propag. lett., vol. 19, no. 12, pp. 2324-2328, 2020 [3] c. x. mao, d. vital, d. h. werner, y. wu and s. bhardwaj, "dual-polarized embroidered textile armband antenna array with omnidirectional radiation for on-/off-body wearable applications", ieee trans. ant. prop, vol. 68, no. 4, pp. 2575-2584, 2020. [4] y. l. chow, z. n. chen, k. f. lee and k. m. luk, "a design theory on broadband patch antennas with slot", in proceedings of ieee antennas propag. soc. int. symp. dig., atlanta, usa, jun. 1998, vol. 2, pp. 1124-1127. [5] s. xiao, b. z. wang and x. s. yang, "a novel frequency reconfigurable patch antenna", microwave opt. tech. lett., vol. 36, pp. 295-297, 2003. [6] y. chen and c. f. wang, "characteristic-mode-based improvement of circularly polarized u-slot and eshaped patch antennas", ieee antennas wireless propag. lett., vol. 11, pp. 1474-1477, 2012. [7] k.-f. lee, s. l. s. yang and a. a. kishk, "dualand multiband u-slot patch antennas", ieee antennas wireless propag. lett., vol. 7, pp. 645-647, 2008. [8] f. yang, x.-x. zhang, x. ye and y. r. samii, "wide-band e-shaped patch antennas for wireless communications", ieee trans. ant. propag., vol. 49, no. 7, pp. 1094-1100, 2001 [9] e. k. kaivanto, m. berg, e. salonen and p. de maagt, "wearable circularly polarized antenna for personal satellite communication and navigation", ieee trans. antennas propag., vol. 59, no. 12, pp. 4490 4496, dec. 2011. [10] a. khidre, k.-f. lee, a. z. elsherbeni and f. yang, "wide band dual–beam u-slot microstrip antenna", ieee trans. ant. propag., vol. 61, no. 3, pp. 1415-1418, mar. 2013. [11] l. song and y. rahmat-samii, "a systematic investigation of rectangular patch antenna bending effects for wearable applications", ieee trans. ant. prop, vol. 66, no. 5, pp. 2219-2228, 2018. [12] k. s. kunz and r. j. luebbers, the finite difference time domain method for electromagnetics, crc press, boca raton, fl, 1993. [13] w.c.gibson, the method of moments in electromagnetics, chapman and hall/crc, 2021. [14] t.j.r. hughes, the finite element method: linear static and dynamic finite element analysis, prenticehall, 1987. tlm modelling of slotted wearable microstrip antenna under bending conditions 623 [15] c. christopoulos, the transmission-line modelling method: tlm, institute of electrical and electronics engineers, 1995. [16] o. messaoudi, o. beneyello, d. pompei and a. papiernik, "the transmission line matrix method applied to microstrip antennas", in proceedings of 1988 ap-s digest, 1988, pp. 1022-1025. [17] n. fichtner, u. siart, y. kuznetsov, a. baev and p. russer, "tlm modeling and system identification of optimized antenna structures", adv. radio sci., vol. 6, pp. 45-48, 2008 [18] s. ghosh, s. chatterjee and b. gupta, "meander-lined implantable antenna design at 2.45 ghz using transmission line model", iete j. res., vol. 70, no. 11, pp. 8127-8139, 2024. [19] t. dimitrijević, j. joković, b. milovanović and n. dončov, "tlm modeling of a probe-coupled cylindrical cavity based on compact wire model in the cylindrical mesh", int. jour. of rf and microw. comp.-aided eng., vol. 22, no. 2, pp. 184-192, 2012. [20] t. dimitrijević, j. joković and n. dončov, "efficient modelling of a circular patch-ring antenna using the cylindrical tlm approach", ieee antennas and wireless propag. lett., vol. 16, pp. 2070-2073, apr. 2017. [21] j. joković, t. dimitrijević, a. atanasković and n. dončov, "computational modeling of the bent antenna in an on-body mode using the cylindrical tlm approach", math. probl. engineer., vol. 2022, p. 8486740, 2022. [22] t. dimitrijević, a. vuković, a. atanasković, j. joković, p. sewell and n. dončov, "holistic analysis of conformal antennas using the cylindrical tlm method", ieee trans. ant. propag., vol. 71, no. 5, pp. 4028-4035, 2023. [23] j. joković, t. dimitrijević, n. dončov and b. milovanović, "efficient integral cylindrical transmission line matrix modelling of a coaxially loaded probe coupled cavity", iet microwaves, ant.& prop., vol. 9, no. 8, pp. 788-794, 2015. instruction facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 11 23 https://doi.org/10.2298/fuee1801011v cost-effective sensors and sensor nodes for monitoring environmental parameters dragana vasiljević 1 , čedo žlebič 1 , goran stojanović 1 , mitar simić 2 , libu manjakkal 3 , zoran stamenković 4 1 faculty of technical sciences, university of novi sad, serbia 2 faculty of electrical engineering, university of banja luka, bosnia & herzegovina 3 university of glasgow, g12 8qq glasgow, uk 4 ihp, frankfurt (oder), germany abstract. this paper reviews the design and characterization of humidity and ph sensors manufactured in the printed circuit board (pcb), ink-jet, and screen printing technologies. the first one (pcb technology) provides robust sensors with pet film which can be exposed to harsh environment. the second (ink-jet technology) can manufacture sensors on flexible substrates (foils and papers). the third (screen printing technology) has been used to implement a thick-film sensor. in addition to this, a multi-sensor cloudbased electronic system with autonomous power supply (solar panels) for air and water quality monitoring has been described. finally, a flexible and modular hardware platform for remote and reliable sensing of environmental parameters has been presented. key words: humidity sensor, ph sensor, sensitivity, stability, sensor node 1. introduction advanced applications require different types of sensors which can be manufactured in various technologies. the manufacturing method determines the performance and price of the sensors. this paper deals with the two types of sensors: humidity sensors and ph sensors. humidity sensors play an important role in many measurement and control applications in meteorology, agriculture, environmental protection, industry, and medicine. in the past years, a lot of effort has been made to develop high-performance humidity sensors exhibiting the large sensitivity, fast response and recovery, and small hysteresis. various transduction techniques, such as capacitive, resistive, acoustic, optical, and mechanical, have been adopted for the design of humidity sensors. their cost depends on the accuracy requirements, response time, hysteresis, sensitivity, mechanical and chemical characteristics, power received july 27, 2017 corresponding author: goran stojanović faculty of technical sciences, university of novi sad, trg dositeja obradovića 6, 21101 novi sad, serbia (e-mail: sgoran@uns.ac.rs) 12 d. vasiljević, ĉ. žlebiĉ, g. stojanović, m. simić, l. manjakkal, z. stamenković consumption, etc. pet film as one of the most common substrates in industry is used as a sensitive layer for humidity measurements. pet film, compared to different thermoplastics, has equal or better water vapour transmission rate, dimensional stability, service temperature range, etc. novel sensitive materials, such as graphene-oxide (go), have recently been introduced in manufacturing process of humidity sensors [1-8]. for instance, the sensitivity of interdigitated capacitive (idc) humidity sensors has been significantly improved by using the go as a sensitive material [9]. the monitoring of water quality is an essential task having global impact. this requires determining the parameters such as ph, dissolved oxygen, content of ammonia, conductivity, turbidity, temperature, and dissolved metal ions [10]. among these the ph is one of the most important as it measures the acidity or basicity of water and directly affects the health of individuals [11]. the ph measurement has wide range of applications including environmental monitoring, chemical processing [12], medical [13], food and beverage [14], biomedical applications such as blood analysis [15], and monitoring of ph fluctuations in the human brain [16]. these applications require highly reliable and accurate ph sensors with the reduced level of maintenance and long lifetime. a range of electrochemical and non-electrochemical methods have been explored for ph measurements [17-19]. among these the glass electrode based ph sensor has been the most attractive and reliable [17-20]. however, the lack of applicability of the existing solutions in environments that are corrosion prone, or have high temperature and high pressure conditions is a limitation, which provides a strong motivation to develop new ph sensors. in this regard, the metal oxide based ph sensors are attractive as they offer a number of potential advantages over glass electrode ph sensors, including low-cost, smaller dimensions, and ease of manufacturing. due to high chemical stability, the tio2 based films are considered good for ph sensitive layers and a few studies concerning tio2 as a ph sensitive layer have been reported as well [21, 22]. 2. cost-effective sensors manufactured in different technologies humidity sensor with pet lamination film pet film as a sensitive layer has been chosen since, compared to thermoplastics, it has equal or better water vapour transmission rate, dimensional stability, and service temperature range. this film (with and without 400 µm pores) has been laminated on copper electrodes. three types of idc structures have been designed and manufactured on the standard fr4 dielectric substrate with a conductive copper layer. geometrical parameters of the idc structures have been optimized in order to obtain the targeted capacitance values (from 25 pf to 45 pf). the layout of the idc humidity sensor is shown in figure 1a, while the representative samples of the manufactured sensors (with and without macro-porous cover) are presented in figure 1b and figure 1c, respectively. cost-effective sensors and sensor nodes for monitoring environmental parameters 13 (a) (b) (c) fig. 1 a) layout of idc sensor, b) porous pet sensor, c) standard pet sensor the idc structures have been measured with lcz meter (hp 4277a). they have been milled with lpkf protomat s100 machine. a porous pet film with 400-µm pore diameter has been used (figure 2b). (a) (b) fig. 2 schematic structures of proposed humidity sensors: a) pet film laminated on the copper electrodes, b) porous pet film laminated on the copper electrodes the change in the capacitance of presented humidity sensors is related to the three different processes [23]. the first is adsorption on the polymer surface (given rise of a new thin layer on the top of the polymer), second is absorption into the polymer phase (changing the dielectric constant of the polymer) and the third is swelling of the polymer layer. sensor’s sensitivity can be increased by adding pores into pet laminated layer which significantly increase the water molecules adsorption inside this porous dielectric film. in order to investigate the humidity response, the sensors have been installed in a chamber with humidity and temperature control (heraeus vötsch vlk 08/450). the adjustable humidity range has been between 45% and 90%, while the temperatures were fixed at 30°c and 40°c. the measurements have been carried out with a lcz meter (hp 4277a), which was connected via agilent 82357a usb/gpib interface converter with a laptop. an in-house developed program (created using labview) has been used for data acquisition. characteristics of the tested sensors have been determined by observing capacitance variations at 50 khz. capacitance values of the two sensor types (with standard pet film and porous pet film) have been measured. capacitance responses of the sensors for a fixed environment temperature (30°c and 40°c) and relative humidity (45% rh – 90% rh) are presented in figure 3 and figure 4. the capacitance stability of the sensor has been observed for time of 30 seconds. results show a very high stability of the sensor capacitance in time. 14 d. vasiljević, ĉ. žlebiĉ, g. stojanović, m. simić, l. manjakkal, z. stamenković (a) (b) fig. 3 standard pet sensor capacitance stability as a function of relative humidity (rh): a) for temperature of 30°c, b) for temperature of 40°c (a) (b) fig. 4 porous pet sensor capacitance stability as a function of relative humidity (rh): a) for temperature of 30°c, b) for temperature of 40°c comparison of the humidity sensor sensitivities is presented in table i. above 80% rh at 30°c, the porous sensor has a sensitivity of 48ff/%rh, while the sensitivity of the standard sensor is 17ff/%rh. also, for humidity above 80%rh and temperature of 40°c, the sensitivity of the porous sensor is 106ff/%rh, while the sensitivity of the standard sensor is 30ff/%rh. measurement results show that the sensitivity of sensors laminated with pet film (standard and porous) increases with increase of the temperature and rh. similar results have been reported in [24]. since the adhesive layer is placed between pet film and copper electrodes, the sensor sensitivity is reduced. this is because the adhesive layer, in some way, prevents the transfer of pet film dielectric constant change (due to the water adsorption) to idc structure and its capacitance. cost-effective sensors and sensor nodes for monitoring environmental parameters 15 table 1 sensor sensitivity in a humidity range from 45% to 90% temperature sensor 45-60% 60-80% 80-90% 30 °c pet sensor 8 ff/%rh 11 ff/%rh 17 ff/%rh porous pet sensor 11 ff/%rh 20 ff/%rh 48 ff/%rh 40 °c pet sensor 8 ff/%rh 12 ff/%rh 30 ff/%rh porous pet sensor 17 ff/%rh 28 ff/%rh 106 ff/%rh response time of the sensors is measured to 90% point of the final steady-state capacitance during the relative humidity change from 45% rh to 90% rh at 24°c. also, the recovery time is measured as time in which the sensor capacitance changes with 90%rh of its maximum value to the initial value while humidity content is reduced from 90%rh to 45%rh. the response and recovery times of the standard pet sensor have been found to be 35 s and 57 s, respectively. likewise, the response time of the porous pet sensor is 42 s, while the recovery time is 47 s. humidity sensor based on graphene-oxide the sensors have been manufactured by an ink-jet printing process using the dimatix deposition material printer (dmp-3000) and spin-coating. it has been widely acknowledged that the ink-jet manufacturing technology is cost-effective in the case of humidity sensors [25]. an interdigitated capacitor with 20 pairs of electrodes has been designed, as shown in figure 5. it consists of a polyimide substrate, interdigitated ag electrodes, and sensing go material. (a) (b) fig. 5 capacitive humidity sensor based on go: a) schematic of the sensor, b) sensor’s electrodes before deposition of go the second sensor layer has been manufactured by spin-coating 3 layers of the graphenea go ink on top of the electrodes. measurements have been performed using an in-house measurement setup shown in figure 6. it consists of a chamber (plastic box) and humidity source (aerosol). capacitances and resistances of the manufactured sensors have been measured using the agilent 4284a lcr meter. the lascar el-usb-2 humidity and temperature data logger has been used to measure the humidity level inside the chamber. 16 d. vasiljević, ĉ. žlebiĉ, g. stojanović, m. simić, l. manjakkal, z. stamenković fig. 6 humidity sensing and measurement setup fig. 7 capacitance hysteresis curves of the go-based sensor the capacitance hysteresis characteristic of go sensor has been observed by increasing the relative humidity from 45% to 85% for water molecules absorption and then decreasing back to 45% for water molecules desorption. the measurement results are shown in figure 7. the capacitance values range from 200 pf to 1100 pf, for the relative humidity in the range from 45% to 85%. this indicates that the proposed go sensor has much higher sensitivity comparing to the others described in open literature. in order to compare the response speed of the analysed go sensors, the behaviour in absorption and desorption phases has been observed. figure 7 shows a significant hysteresis (lagging) of the sensor capacitance behind rh variations. this could be explained by different speeds at which the humidity within the chamber (plastic box in figure 6) has been changed. cost-effective sensors and sensor nodes for monitoring environmental parameters 17 namely, the humidity has been raised by introducing an aerosol device and, after some time, reduced back by self-drying in laboratory conditions. tio2 thick-film ph sensor interdigitated electrode (ide) tio2 thick-film based ph sensor has been designed, manufactured, and characterized [26]. a ph measurement system based on the integrated circuit ad5933 [27-29] (which can be used for sensor impedance characterization, as well as sensor readout electronics) has also been implemented. the manufacturing process of the conductimetric ph sensor is similar to that reported in [11, 30]. we have chosen alumina as a substrate to investigate the performance of pure metal-oxide and to avoid any reaction at the metal/metal-oxide interface. initially, a planar ide has been deposited on an alumina substrate by screen printing of ag paste (ag/pd esl 9695). the screen printing of metal paste is a faster way of manufacturing devices at low cost [31]. illustration of the conductimetric ph sensor is shown in figure 8a. the major advantages of the ide ph sensor, compared to the other reported approaches, are: faster and low-cost manufacturing, lack of reference electrode, large surface area, and low energy consumption during measurements. in addition, the screen printing technology could open avenues for integrating the ph sensors with electronics on flexible substrates [31]. fig. 8 a) illustration of tio2 ph sensor, b) impedance measurement device connected to ph sensor, c) experimental setup for ph sensor characterization the ad5933-based impedance measurement system reported earlier [27-29] has been used for sensor characterization. figure 8c shows the experimental setup for spectroscopic analysis of the sensor impedance. the sample under test has been connected to the measurement device and placed into a beaker with a solution. the sensor can be employed in water pollution monitoring, with an expected operating ph range from 6 to 9, thus test 18 d. vasiljević, ĉ. žlebiĉ, g. stojanović, m. simić, l. manjakkal, z. stamenković solutions with ph ranging from 4 to 10 have been prepared by adding 1 mol% of hcl or koh to distilled water. a standard glass-electrode ph and conductivity meter (elmeiron, cpc-411) with temperature probe has been used to control the ph level of test solutions and measure the conductivity of each test solution. the sensor has been washed with deionized water and dried with a paper towel after each measurement to reduce the contamination of the electrode surface by solutions with different ph. all measurements have been done at room temperature with the liquid temperature close to 23°c. to measure the electrical parameters of tio2 films at different ph values, the sensor has been dipped in the solution for 10 min prior to operating to ensure the steady-state. the impedance measurement has been done by performing frequency sweep in range of 5-20 khz with ac voltage of 200 mv. fig. 9 illustrates the variation of impedance magnitude and phase angle as a function of frequency in the range 5-20 khz for different ph values of test solution. the magnitude and phase of the sensor impedance decrease with increase of the ph value of solution. for a constant ph, there is a decrease in magnitude and an increase in phase as the frequency increases. fig. 9 impedance magnitude and phase angle plots for tio2 thick-film ph sensor for different ph values of solutions over a frequency range from 5 khz to 20 khz from figure 9, it can be noted that the impedance is lower when the sensor is in a solution of a higher ph. variations of the solution resistance with different ph values contribute to changes of the sensor impedance. the observed dependence is mainly caused by a lower resistance of the applied alkaline solutions as compared with the acidic solutions. the variation in impedance with frequency can be attributed to the effect of intercrystalline capacitance [32]. in the khz-range, this value is sufficient for shortcircuiting the spaces between the grains, which reduces the resistance of sensor [32]. obtained impedance data has been used for more detailed sensor characterization regarding sensor sensitivity. it is very important to determine impedance changes of the sensor compared to changes of the ph value of the analysed solutions. the developed impedance measurement device (used for the sensor characterization) can be used as readout electronics as well, if the measurement error is lower than the sensor sensitivity. sensor sensitivity regarding the relative change of impedance magnitude (z) with ph value change can be defined as cost-effective sensors and sensor nodes for monitoring environmental parameters 19 ph ph-1 ph-1 | | (ph) 100%z z z s z   , for ph values between 4 and 10. sensor sensitivity regarding relative change of impedance phase angle (ϕ) with ph value change can be defined as ph ph-1 ph-1 | | (ph) 100%s      . in figure 10, relative changes of the impedance magnitude and phase angle of the manufactured ph sensor are shown. the five frequencies (5 khz, 8.8 khz, 12.6 khz, 16.4 khz, and 20.2 khz) in the analysed frequency range are chosen to establish a linear frequency distribution. fig. 10 sensitivity of sensor impedance magnitude and phase angle as it can be seen from figure 10, the relative change of the impedance magnitude is higher than 2% and it increases with frequency increase. additionally, there is decrease in relative change of the impedance phase angle with increase of the ph value. therefore, for ph values lower than 7, it is more convenient to measure the phase angle, while for ph values higher than 7, it is better to measure the impedance magnitude. moreover, it can be concluded that the reported measurement error of 2% of developed ad5933-based device [27-29] is acceptable in typical applications. 3. wireless sensor nodes for environmental parameter measurements a tio2-based sensor has been used with commercial sensors in realization of a wireless sensor node for environmental parameters monitoring (ph, temperature, relative humidity, volatile organic compounds, etc.) [33]. it is a low-cost, portable, and low-power system powered by a solar-panel charger unit, thus providing automated in-situ measurements and data storage operations. compared to the systems presented in literature, the design shown in figure 11 offers the advantage of remote multi-parameter measurements in real-time [33]. 20 d. vasiljević, ĉ. žlebiĉ, g. stojanović, m. simić, l. manjakkal, z. stamenković fig. 11 wireless sensor node with a ph sensor and additional commercial sensors moreover, the developed system for remote measurement and acquisition of environmental parameters has been integrated in a more complex cloud-based system which ensures remote access to the measurement data in real-time. ibm iot platform has been used for data presentation and internet access of measurement results, as it is shown in figure 12. fig. 12 browser view of the web ibm watson iot platform with sensor data ihpnode has been developed as a flexible and modular hardware platform for remote sensing in environmental and agricultural applications [34]. the node (figure 13) is based on the texas instruments msp430x low-power microcontroller and three rf transceivers, one working in the 868 mhz and two working in the 2.4 ghz frequency band. the two of cost-effective sensors and sensor nodes for monitoring environmental parameters 21 these (cc1101 and cc2500) support flexible proprietary network protocols, while the third (cc2520) provides a network coprocessor for zigbee protocol integration. fig. 13 ihpnode based on ti msp430x microcontroller 4. conclusion cost-effective humidity and ph sensors have been designed, manufactured, and characterised. two wireless sensor nodes for remote monitoring of environmental parameters have been developed using the aforementioned humidity and ph sensors. the future work should complete and integrate these nodes into a smart multi-sensor cloudbased hardware/software platform for environmental and agricultural applications. acknowledgement: the work described in this paper is partly supported by the ministry of education, science and technological development within the project no.tr32016 and the provincial secretariat for higher education and r&d activities within the project no.114-451-2044/2016-01. references [1] h. bi, k. yin, x. xie, j. ji, s. wan, l. sun, m. terrones, and m. s. dresselhaus, ―ultrahigh humidity sensitivity of graphene oxide‖, scientific reports, vol. 3-2714, pp. 1-7, 2013. [2] h. chi, y. j. liu, f. wang, and c. he, ―highly sensitive and fast response colorimetric humidity sensors based on graphene oxides film‖, acs appl. mater. interfaces, vol. 7, pp. 19882-19886, 2015. [3] y. yao, x. chen, h. guo, z. wu, and x. li, ―humidity sensing behaviour of grapheneoxide-silicon bilayer flexible structure‖, sensors and actuators b: chemical, vol. 161, pp. 1053-1058, 2012. [4] l. guo, h. b. jiang, r. q. shao, y. l. zhang, s. y. xie, j. n. wang, x. b. li, f. jiang, q. d. chen, t. zhang, and h. b. sun, ―two-beam-laser interference mediated reduction, patterning and nanostructuring of graphene oxide for the production of a flexible humidity sensing device‖, carbon, vol. 50, pp. 16671673, 2012. 22 d. vasiljević, ĉ. žlebiĉ, g. stojanović, m. simić, l. manjakkal, z. stamenković [5] p. g. su and z. m. lu, ―flexibility and electrical and humidity-sensing properties of diamine functionalized graphene oxide films‖, sensors and actuators b: chemical, vol. 211, pp. 157-163, 2015. [6] d. zhang, j. tong, and b. xia, ―humidity-sensing properties of chemically reduced graphene oxide/polymer nanocomposite film sensor based on layer-by-layer nano self-assembly‖, sensors and actuators b: chemical, vol. 197, pp. 66-72, 2014. [7] r. gao, d.-f. lu, j. cheng, y. jiang, l. jiang, and z.-m. qi, ―humidity sensor based on power leakage at resonance wavelengths of a hollow core fiber coated with reduced graphene oxide‖, sensors and actuators b: chemical, vol. 222, pp. 618-624, 2016. [8] d. zhang, h. chang, p. li, r. liu, and q. xue, ―fabrication and characterization of an ultrasensitive humidity sensor based on metal oxide/graphene hybrid nanocomposite‖, sensors and actuators b: chemical, vol. 225, pp. 233-240, 2016. [9] c. l. zhao, m. qin, w. h. li, and q. a. huang, ―enhanced performance of a cmos interdigital capacitive humidity sensor by graphene oxide‖, solid-state sensors, actuators, and microsystems conference, pp. 1954-1957, 2011. [10] j. kang, m. wang, and z. xiao, ―modeling and control of ph in pulp and paper wastewater treatment process‖, journal water resource and protection, vol. 2, pp. 122-127, 2009. [11] l. manjakkal, k. cvejin, j. kulawik, k. zaraska, d. szwagierczak, and r. p. socha, ―fabrication of thick film sensitive ruo2-tio2 and ag/agcl/kcl reference electrodes and their application for ph measurements‖, sensors and actuators b: chemical, vol. 204, pp. 57-67, 2014. [12] h. a. clark, r. kopelman, r. tjalkens, and m. a. philbert, ―optical nanosensors for chemical analysis inside single living cells sensors for ph and calcium and the intracellular application of pebble sensors‖, anal. chem., vol. 71, pp. 4837-4843, 1999. [13] b. d. malhotra and a. chaubey, ―biosensors for clinical diagnostics industry‖, sensors and actuators b: chemical, vol. 91, pp. 117-127, 2003. [14] c. bohnke, h. duroy, and j. l. fourquet, ―ph sensors with lithium lanthanum titanate sensitive material: applications in food industry‖, sensors and actuators b: chemical, vol. 89, pp. 240-247, 2003. [15] l. xie, y. qin, and h. y. chen, ―polymeric optodes based on upconverting nanorods for fluorescent measurements of ph and metal ions in blood samples‖, anal. chem., vol. 84, pp. 1969-1974, 2012. [16] v. a. magnotta, h. y. heo, b. j. dlouhy, n. s. dahdaleh, r. l. follmer, d. r. thedensa, m. j. welshc, and j. a. wemmie, ―detecting activity-evoked ph changes in human brain‖, proc. national academy of sciences of usa, vol. 109, pp. 8270-8273, 2012. [17] u. guth, w. vonau, and j. zosel, ―recent developments in electrochemical sensor application and technology — a review‖, meas. sci. technol., vol. 20, pp. 1-14, 2009. [18] y. qin, h. j. kwon, m. m. howlader, and m. j. deen, ―microfabricated electrochemical ph and free chlorine sensors for water quality monitoring: recent advances and research challenges‖, rsc advances, vol. 5, pp. 69086-69109, 2015. [19] p. kurzweil, ―metal oxides and ion-exchanging surfaces as ph sensors in liquids: state-of-the-art and outlook‖, sensors, vol. 9, pp. 4955-4985, 2009. [20] g. eisenmann, glass electrodes for hydrogen and other cations, ed. marcel dekker, new york, usa, 1967. [21] y. h. liao and j. c. chou, ―preparation and characterization of the titanium dioxide thin films used for ph electrode and procaine drug sensor by sol-gel method‖, mat. chem. phys., vol. 114, pp. 542-548, 2009. [22] y. chen, s. c. mun, and j. kim, ―a wide range conductometric ph sensor made with titanium-dioxide / multiwall-carbon nanotube/cellulose hybrid nanocomposite‖, ieee sensors j., vol. 13, pp. 4157-4162, 2013. [23] r. igreja and c. j. dias, ―dielectric response of interdigital chemocapacitors: the role of the sensitive layer thickness‖, sensors and actuators b: chemical, vol. 115, pp. 69-78, 2006. [24] l. chia-yen and l. gwo-bin, ―micro-machine based humidity sensors with integrated temperature sensors for signal drift compensation‖, journal of micromechanics and microengineering, vol. 13, pp. 620-627, 2003. [25] f. molina lopez, d. briand, and n. f. de rooij, ―all additive inkjet printed humidity sensors on plastic substrate‖, sensors and actuators b: chemical, vol. 166, pp. 212-222, 2012. [26] m. simić, l. manjakkal, k. zaraska, g. m. stojanović, and r.dahiya, ―tio2 based thick film ph sensor‖, ieee sensors j., vol. 17, pp. 248-255, 2017. [27] m. simić, ―complex impedance measurement system for the frequency range from 5 khz to 100 khz‖, key eng. mater., vol. 644, pp. 133-136, 2015. [28] m. simić, ―realization of digital lcr meter‖, in proceedings of the epe, 2014, pp. 769-773. [29] m. simić, ―complex impedance measurement system for environmental sensors characterization‖, in proceedings of the 22nd telecommunications forum telfor, belgrade (serbia) 2014, pp. 660-663. cost-effective sensors and sensor nodes for monitoring environmental parameters 23 [30] l. manjakkal, e. djurdjic, k. cvejin, j. kulawik, k. zaraska, and d. szwagierczak, ―electrochemical impedance spectroscopic analysis of ruo2 based metal oxide thick film ph sensors‖, electrochim. acta., vol. 168, pp. 246-255, 2015. [31] s. khan, l. lorenzelli, and r. dahiya, ―technologies for printing sensors and electronics over large flexible substrates: a review‖, ieee sensor. j., vol. 15, pp. 3164-3185, 2015. [32] k. arshak, e. gill, a. arshak, and o. korostynska, ―investigation of tin oxides as sensing layers in conductimetric interdigitated ph sensors‖, sensors and actuators b: chemical, vol. 127, pp. 42-53, 2007. [33] m. simić, g. stojanović, l. manjakkal, and k. zaraska, ―multi-sensor system for remote environmental (air and water) quality monitoring‖, in proceedings of the 24th telecommunications forum telfor, belgrade (serbia) 2016, pp. 1-4. [34] k. piotrowski, a. sojka-piotrowska, z. stamenkovic, and r. kraemer, ―ihpnode platform as a base for precision farming and remote diagnosis in agriculture‖, in proceedings of the 24th telecommunications forum telfor, belgrade (serbia) 2016, pp. 1-5. 12151 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 619 – 638 https://doi.org/10.2298/fuee2404619b © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper optimized eemd feature extraction using bio-inspired optimization algorithms from electrocardiogram signals amit bakshi, mamata panigrahy, jitendra kumar das school of electronics engineering, kiit deemed to be university, bhubaneswar, india orcid ids: amit bakshi https://orcid.org/0000-0003-2702-3790 mamata panigrahy https://orcid.org/0000-0003-3686-5543 jitendra kumar das https://orcid.org/0000-0003-4249-577x abstract. electrocardiogram (ecg) signal analysis is crucial for diagnosing heart conditions. the empirical mode decomposition (emd) technique is quite effective in analyzing non-stationary signals. however, it has the inherent problem of mode mixing. to overcome this, the ensemble empirical mode decomposition (eemd) method incorporates noise with known variance, utilizes the ensemble nature of emd and enhances the decomposition process. this paper proposes a novel method for extracting features using eemd to make its parameters independent. the intrinsic mode functions (imfs) extracted from eemd may vary depending on the parameters used. in contrast, emd exhibits parameter independence, which ensures greater consistency. to obtain consistent results from eemd without sacrificing its advantages over emd, different bioinspired optimization techniques have been employed. once consistent imfs are generated, amplitude modulation (am) and frequency modulation (fm) signals within each imf are distinguished. finally, the retrieved bandwidth of the am/fm signals is utilized as feature vectors. these features are then evaluated using two well-established classifiers like support vector machine (svm) and decision tree (dt). the respective classifier accuracy levels of 91% and 98.94% were achieved using published datasets. the result shows the efficiency of the proposed feature extraction techniques. key words: intrinsic mode function, empirical mode decomposition, ensemble emd, support vector machines, decision tree 1. introduction cardiac arrhythmia causes a significant health concern worldwide, contributing to morbidity and mortality across diverse populations [1]. timely and accurate detection of arrhythmic events is essential for effective intervention and management of cardiovascular received october 11, 2023; revised may 21, 2024, june 23, 2024, july 26, 2024 and august 20, 2024; accepted september 24, 2024 corresponding author: amit bakshi school of electronics engineering, kiit deemed to be university, bhubaneswar, india e-mail: amitfet@kiit.ac.in https://orcid.org/0000-0003-2702-3790 https://orcid.org/0000-0003-3686-5543 https://orcid.org/0000-0003-4249-577x 620 a. bakshi, m. panigrahy, j.k. das diseases. recent advances in signal processing, especially in electrocardiogram (ecg) analysis, have provided promising new paths for better cardiac arrhythmia detection and prevention. different features are extracted from sinus-rhythm ecg and cardiac disorder ecg signals and compared to detect the abnormality. in recent decades, researchers have developed and proposed a multitude of signal processing algorithms and machine learning (ml) models to automatically analyze ecg signals for cardiac arrhythmias and abnormalities [2]. researchers use a hybrid deep learning model (dl) that integrates attention mechanisms with a convolutional neural network (cnn) and long short-term memory (lstm) to categorize cardiac arrhythmias [3]. by using cnns for feature extraction and providing the lstm component with the most discriminative characteristics from the input, this method seeks to reduce dimensionality. r. saravana ram et al. [4] presented the hybdeepnet model, which uses ecg signals to detect cardiac arrhythmias. this hybrid deep learning network combines three models: deep belief networks (dbns), multilayer perceptrons (mlps), and restricted boltzmann machines (rbms). while the model shows robustness, as evidenced by the obtained auc and f1-score values, there is room for improvement in its detection performance. non-stationary signals are signals with time-varying statistical characteristics like variance and mean. the analysis of highly unstable signals becomes more complicated due to their great variability and unpredictability over time. signal feature extraction with a high level of efficacy, possesses the ability to decompose signals into smaller components. nowadays, these decomposition processes are competent enough to process highly unstable and nonstationary signals with greater precision. while early attempts at signal decomposition utilized wavelet transform, this method reliance on specific mathematical functions limits its robustness [5, 6]. in pursuit of a more adaptive approach for electrocardiogram (ecg) signal analysis, empirical mode decomposition (emd) has emerged as a highly effective and widely accepted technique with low computational intricacy and more precise characterization in contrast with multivariate emd for ecg signal characterization issues [7-9]. the mean frequency (mf) proportion of intrinsic mode functions (imfs) has been utilized as a component to recognize the contrast between sinus-rhythm and cardiac disorders ecg signals [7]. the weighted frequency has been utilized as a feature of imfs for clearly distinguishing sinus-rhythm and cardiac disorder ecg signals [6]. there are a few procedures for the examination of normal sinus rhythm and cardiac disorder ecg signals that have been proposed in [5-7], which depend on emd growth, particularly for non-linear and nonstationary signal investigation. the empirical mode decomposition (emd) method breaks down a signal into intrinsic mode functions (imfs). the decomposition is achieved through an iterative procedure known as a sifting process. each imf can be represented with elementary am-fm-type signals. features like the bandwidth of these signals are utilized to detect the cardiac abnormalities in the ecg signal. the problem of mode mixing, in which various frequency components may be mixed in a single imf, is one of the major drawbacks of emd [7]. to address this challenge, the ensemble empirical mode decomposition (eemd) method was introduced by wu and huang [10]. eemd tries to reduce mode mixing by adding white noise to the signal over multiple trials and defining imf components as the mean of these trials. by repeating the process similar to emd for each trial, the added noise can be effectively cancelled out in the ensemble mean, using an optimal number of trials determined based on recommendations in the literature [11]. with an increasing number of trials, only the original signal persists, ensuring accurate decomposition. the amplitude of the added noise denoted as optimized eemd feature extraction using bio-inspired optimization algorithms... 621 an, significantly influences the performance of the eemd method in mode separation. an amplitude that is too low, may not induce sufficient changes in the decomposed signal, while an excessively high amplitude could result in redundant imfs [10]. to address this issue, a perfect set of decision variables is selected to be used for optimization using established bio-inspired optimization algorithms based on some metaheuristic techniques [12]. in this bio-inspired type of optimization algorithm, the impact of decision variables on the eemd performance is represented as a fitness function. the least value obtained is to be taken as the optimal parameter value. the metaheuristic optimization techniques are quite good in finding optimum function values from the range of decision variables considered. in addition to this, these techniques help to get excellent solutions for optimization problems, especially in cases of limited computational capacity. the simplicity, flexibility, and local optimum avoidance can be easily carried out using such techniques. every such technique goes through two stages i.e. exploration and exploitation. in the exploration phase, it tries to identify the best possible area from the search space and the later one tries to apply local search on the promising area to improvise each individual in the search space. even if these techniques are broadly classified as evolutionary algorithms and swarmbased algorithms, both types belong to the population-based bio-inspired algorithm. in the case of evolutionary algorithms such as genetic algorithm (ga), as individual solutions in search space whereas in the case of swarm-based methods, different types of swarms are represented as solutions in search space. there are many swarm-based optimization algorithms like particle swarm optimization (pso), ant colony optimization (aco), grey wolf optimization (gwo), and whale optimization algorithm (woa). each of the techniques has its way of updating the swarm position and hence the time to reach convergence along with converging solution depends on this updating strategy. the objective of the execution of these algorithms starts from the formation of a perfect fitness function [11-13]. in this paper, an optimized eemd approach is proposed to make it parameterindependent for improved consistency. to retrieve the best possible decomposed signals, frequency components from the amplitude-modulated signal (bam) and frequencymodulated signal (bfm) are extracted, for the classification of sinus-rhythm and cardiac disorders ecg signals. the remainder of this paper is structured as follows: section 2 provides an overview of the methods employed including dataset considerations, eemd-based decomposition, and optimization techniques. section 3 discusses the performance comparison of the proposed pso-eemd method with the woa-eemd approach and presents the result. finally, section 4 concludes the paper. 2. methods our study aims to identify significant features from ecg datasets. to show the robustness of the proposed methodology in a parameter-dependent environment of eemd, we chose two publicly available and recognized databases from physionet. however, obtaining perfect imfs by eemd is inconsistent due to its dependence on various parameters, as described later in this section. therefore, we included optimization strategies to address this issue. the following sections describe the use of nature-inspired optimization techniques to enhance eemd algorithms, improving their robustness and effectiveness in extracting features from ecg signals. 622 a. bakshi, m. panigrahy, j.k. das 2.1. dataset in this work, we have used binary class datasets from physionet for classification tasks. these datasets have proven essential in the study of signal classification using the application of advanced machine learning models [14]. signal variations, which are considered features, correspond to electrocardiogram (ecg) patterns of sinus-rhythm heartbeats as well as those affected by various arrhythmias and myocardial infarction. pre-processing and segmentation techniques were applied to these signals to create segments that correspond to each heartbeat. the datasets used in our work are: mit-bih arrhythmia database: this dataset includes ecg recordings from 47 different subjects, sampled at 360 hz with 11-bit resolution. at least two cardiologists annotate each beat according to the association for the advancement of medical instrumentation (aami) ec57 standard [15]. the categories include "normal beat (n)," "supra-ventricular premature beat (s)," "premature ventricular contraction (v)," "fusion of ventricular and normal (f)," and "paced beat (q)." for our binary classification task, we have labelled "n" as "normal" and all other categories ("s," "v," "f," "q," etc.) as "abnormal." this binary categorization aims to simplify the initial classification challenge and focus on the robustness of the extracted features using the proposed method. ptb diagnostic ecg database: this dataset comprises ecg records from 290 subjects, including 148 diagnosed with myocardial infarction (mi), 52 healthy controls, and the remaining diagnosed with other cardiac diseases. each record contains 12-lead ecg signals sampled at 1000 hz with 16-bit resolution. in this study, we focused on ecg lead ii and used the mi (myocardial infarction) and healthy control categories for our analysis. we labelled "healthy control" as "normal" and "mi" along with other cardiac disorders as "abnormal." the categorization simplifies the classification objective, aligning with our focus on binary classification to validate feature extraction. 2.2. eemd based decomposition the performance measurements of emd can be improved using ensemble mean, where data to be processed are treated as separate observations and each observation contains different noise over an ensemble of the entire signal [10]. to generalize this ensemble idea, noise is introduced to each single sequence of data. then separate observations were indeed being made as an analogue to a physical experiment that could be repeated many times. to establish an ensemble process possible random noise can be generated as white noise with known properties. with the help of these known characteristics of noise signal multiple observations are mimicked which is then added to each single observation. to carry out emd on each observation of a signal, added white noises provide a uniform distribution scale of reference. therefore, the low signal-noise ratio will not affect the decomposition method but enhances it by avoiding mode mixing. based on this remark, an additional step is taken by arguing that adding white noise may help extract the true signals in the data, a method that is termed ensemble empirical mode decomposition (eemd) [8, 9]. the enhanced empirical mode decomposition (eemd) involves a systematic procedure with the following essential steps: 1. generation of white noise with known properties. 2. addition of noise to the original signal. 3. decomposition of the noisy signal into oscillatory components. optimized eemd feature extraction using bio-inspired optimization algorithms... 623 4. iteration for all generated white noise. 5. finalize the decomposed signals: the ensemble mean of the corresponding intrinsic mode functions (imfs) from all decompositions results in the finalized set of decomposed signals. the key properties of the white noise used in eemd are crucial to its effectiveness: 1. even distribution on all timescales: the added white noise ensures a relatively uniform distribution across all timescales, contributing to a comprehensive exploration of signal characteristics. 2. dyadic filter bank property: this property imparts control over the periods of oscillations within an oscillatory component, significantly reducing the likelihood of scale mixing. through ensemble averaging, the impact of added noise is mitigated, leading to more robust decompositions. fig. 1 illustrates the imfs generated from eemd without the application of the optimization algorithm. (a) (b) (c) (d) fig. 1 extracted imfs without using optimization (a) signal from the mit-bih normal sinus rhythm database, record no. 'nsrdb/16265', sampled at 128 hz. (b) signal from the mit-bih arrhythmia database, record no. 'mitdb/104', sampled at 360 hz, representing a cardiac disorder. (c) signal from the ptb diagnostic ecg database, sinus-rhythm ecg, record no. 'ptbdb/patient165/s0322lre', sampled at 1000 hz. (d) signal from the ptb diagnostic ecg database, record no. 'ptbdb/patient058/ s0216lre', with a sample rate of 1000 hz, showing a cardiac disorder. 624 a. bakshi, m. panigrahy, j.k. das fig. 2 depicts the decomposition of different ecg signals into their first three imfs using an eemd method. fig. 2(a) shows the imfs for an ecg signal with atrial fibrillation, highlighting the characteristic irregularities in the waveform. the imfs capture the erratic and disorganized electrical activity for a ventricular fibrillation ecg signal, shown in fig. 2(b). fig. 2(c) depicts the imfs for an ecg signal with pauses, suggesting a stoppage in the heart's electrical activity. the imfs of ecg signals with a normal sinus rhythm that demonstrate the regular and periodic nature of the heartbeat are shown in fig. 2(d). these decompositions analyze the unique characteristics found in each imf, which aids in differentiating various heart diseases. (a) (b) (c) (d) fig. 2 the first three imfs after applying eemd to ecg signals: (a) an atrial fibrillation ecg signal from the mit-bih atrial fibrillation database, record no. 'afdb/04126', sampled at 250 hz; (b) a ventricular fibrillation ecg signal from the mit-bih malignant ventricular ectopy database, record no. 'vfdb/418', sampled at 250 hz; (c) a signal with pauses from record no. '232', sampled at 360 hz; (d) a sinus rhythm ecg signal from the mit-bih normal sinus rhythm database, record no. 'nsrdb/16265', sampled at 128 hz. optimized eemd feature extraction using bio-inspired optimization algorithms... 625 2.3. optimized eemd imfs the performance of eemd is significantly impacted by additive noise parameters like the standard deviation of white noise and the number of ensembled signals. getting optimal values for these two parameters will best fit the eemd and hence obtained imfs will be better [10, 12, 16]. a robust and well-established fitness function is always of prime importance for an optimization problem. while there are many statistical parameters like entropy and correlation, they may not perfectly represent issues of over-decomposition and under-decomposition when taken individually. to address these issues, a novel fitness function (f) has been proposed that reduces the error in the eemd process. this fitness function depends upon two parameters namely correlation coefficient (c) and standard deviation (s). (1) considering imfs in eemd as n scalar observations, the correlation coefficient between two imfs at ith and jth instant is ci j and the maximum correlation coefficient (c) is defined as c=max ({ }) (2) where the correlation among the imfs can be formulated as (3) where ui and uj represent two different imfs with mean of μui and μuj respectively. the standard deviation(s) can be found from the ratio of variation of decomposed signals to the original ecg signals x(t), as given in equation (4). (4) the two parameters present in the developed fitness function address two major issues in signal decomposition. high correlation among decomposed signals leads to an over-decomposition problem, which restricts decomposed signals from carrying unique information. at the same time lowering this value may create a reverse issue of under decomposition. so, the other parameter in the fitness function i.e. standard deviation takes care of this problem. the lesser the value of standard deviation fewer chances will be there for under decomposition. thus considering both leads to the generation of optimized imfs. 2.3.1. pso-eemd from many of the population-based optimization algorithms, pso is a widely used method that searches for the best decision variable that can be represented as a surface in an n-dimensional space [17]. the philosophy behind the algorithm is each particle in the population has its position and velocity where the position represents the value of the decision variable. with each iteration, the position of the particle changes as per the velocity updating using equation (5) below: 626 a. bakshi, m. panigrahy, j.k. das (5) where once the velocity is updated it will adopt a new position using formula: (6) where there are many variants of pso available with remarkable advantages like a derivativefree approach, less number of iterations, and ease of implementation. however, it suffers from limitations like slower convergence and huge computational time making it restricted to certain applications. in our work, we used pso to return optimized values of decision variables using the fitness function equation (1). 2.3.2. woa-eemd the special hunting behaviour of humpback whales popularly known as the bubble net feeding method makes it suitable for many optimization problems [11]. these whales usually target small fishes close to the surface. earlier it was assumed that two manoeuvres are associated with bubbles and named them ‘upward-spirals’ and ‘doubleloops’. to do so humpback whales dive around 12 m down and then start to create a bubble in a spiral shape around the prey and swim up towards the surface. goldbogen et al. found three different stages for optimization: coral loop, lobtail, and capture loop [18]. detailed information about these behaviours can be found in [11]. it is worth mentioning here that bubble-net feeding is a unique behaviour that can only be observed in humpback whales. mathematically, it can be modeled as: (7) (8) where (9) (10) (11) optimized eemd feature extraction using bio-inspired optimization algorithms... 627 pseudo code for whale optimization algorithm is represented as: 2.4. optimization parameters some initialisation parameters for the optimization methods considered are taken based on some experiments carried out and summarized in below table. table 1 description of parameters for the optimization algorithm optimization technique parameter particle swarm optimization maximum iterations:50 c1:1.2 c2:2.4 no. of particles:50 whale optimization algorithm maximum iterations:50 population:50 r: random a:2~0(linearly decreasing) fig. 3 represents the imfs extracted using pso-eemd for a sample from both normal sinus rhythm and cardiac disorder signals. 1. initiate population 2. calculate the fitness of each search agent 3. x*=best whale (the whale with the best fitness) 4. while (terminating condition not met) for each whale (search agent): update control parameters a, a, c, l, p if(p<0.5): if abs(a)<1 update the position using eq. (8) else: select a random whale update position using eg. (11-b) endif else: update position using eg. (11-a) endif end for update x* if a better whale is found 5. end while 6. return x* (the optimal solution) 628 a. bakshi, m. panigrahy, j.k. das (a) (b) (c) (d) fig. 3 extracted imfs using optimization (a) signal from the mit-bih normal sinus rhythm database, record no. 'nsrdb/16265', sampled at 128 hz. (b) signal from the mit-bih arrhythmia database, record no. 'mitdb/104', sampled at 360 hz, representing a cardiac disorder. (c) signal from the ptb diagnostic ecg database, sinus-rhythm ecg, record no. 'ptbdb/patient165/s0322lre', sampled at 1000 hz. (d) signal from the ptb diagnostic ecg database, record no. 'ptbdb/patient058/s0216lre', with a sample rate of 1000 hz, showing a cardiac disorder. 2.5. optimized features in our work to get the best possible features or optimized features, we need to have better imfs extracted from ecg signals. so, to accomplish this instead of finding optimized features directly we obtained optimized imfs as stated in the previous section. now in this section, we are going to demonstrate the way of finding features from optimized imfs. the analytic intrinsic mode function (imf) is calculated by applying the hilbert transform on all imfs obtained by the optimized-eemd method. for each imf component, the analytic signal amplitude a(t) and instantaneous phase ∅(t) can be calculated to obtain the analytic imf z(t). calculation of am and fm bandwidths: the frequency components of a signal can be well represented by its bandwidth. only considering the frequency spectrum, will not provide information about the amplitude or envelope of a signal [19]. instead spread of frequencies because of deviation from mean frequency or because of change in amplitude or even both considered at a time is more informative. in [20, 21], the authors come up with a method for the calculation of two different bandwidth parameters, known as amplitude modulation bandwidth (bam) and optimized eemd feature extraction using bio-inspired optimization algorithms... 629 frequency modulation bandwidth (bfm). in this study, we use bam and bfm to extract important features from ecg signals. these features are important for distinguishing between normal sinus rhythm and cardiac disorders. unlike traditional frequency spectrum analysis which mainly looks at frequency content bam and bfm consider both amplitude and frequency changes. this provides a more comprehensive understanding of the signal. both bam and bfm provide critical insights into the modulation properties of the ecg signal. bam values increase when the signal exhibits significant amplitude variations, often observed in cardiac disorders ecg patterns. on the other hand, bfm helps in identifying frequency shifts, which can be indicative of irregularities associated with various cardiac conditions. a well-established mathematical relation between signal and frequency components is demonstrated below where the centre frequency of analytic imf z(t) is given by (12) in the above equation e is the energy of signal z(t), and z(w) is the fourier transform of signal z(t). equation (12) can also be represented as (13) considering each component of z(t) in (13), the expression in (13) can be further expressed as (14) the second term is zero since that term is purely imaginary, it must be zero for center frequency 〈ω〉 to be real quantity. therefore, the center frequency is given by (15) the bandwidth of the analytic imf z(t) can be defined as (16) equation (16) can be expressed as (17) substituting z(t) from (16) into (17), the expression in (17) can be further expressed as (18) it is clear that the bandwidth of the signal has two terms, one depending on the amplitude and the other depending only on the phase. therefore, two features from each decomposed signal in terms of bandwidth due to amplitude modulation (bam) and the bandwidth due to frequency modulation (bfm) are defined as (19) 630 a. bakshi, m. panigrahy, j.k. das (20) as shown in the fig. 4 till the terminating condition is reached the decision variables go on changing and once converged results are obtained, we calculated imfs. these imfs are then used for calculating am/fm bandwidths to be considered as features. fig. 4 flowchart of the proposed optimized eemd-based am/fm bandwidth feature extraction 2.6. feature extraction using eemd we use important features like frequency modulation bandwidth (bfm) and amplitude modulation bandwidth (bam) derived from the intrinsic mode functions (imfs) obtained by the eemd process to identify anomalies in ecg data. amplitude modulation bandwidth (bam): bam of an imf represents the range of amplitude fluctuations within it. arrhythmias and other irregularities in the ecg signal cause irregular amplitude variations, which increase bam. for instance, atrial fibrillation causes the amplitude variations to become more irregular, as shown by an increased bam. this indicate the existence of an irregular rhythm. frequency modulation bandwidth (bfm): bfm measures the frequency range in which the signal oscillates. irregular heartbeats have increased bfm and fluctuate in frequency, whereas regular heartbeats have a consistent rhythm. for example, ventricular fibrillation causes rapid, irregular heartbeats, which results in a broader bfm and indicates the presence of a cardiac disorder. optimized eemd feature extraction using bio-inspired optimization algorithms... 631 the ecg signal is decomposed into imfs using the eemd method, from which bam and bfm are obtained. these features provide classifiers like support vector machines and decision trees to help distinguish between sinus-rhythm ecg and cardiac disorders ecg signals. these features' effectiveness is evaluated by classification accuracy, which demonstrates their utility in diagnosing abnormalities. typical bam and bfm values for various ecg signals are shown in table 2. these values, derived from the first three imfs of ecg signals in the ptbdb and mit-bih databases, are the most important for describing ecg signals. bam and bfm values in normal ecg signals are generally steady within a specific range. on the other hand, cardiac disorder ecg signals exhibit greater fluctuation in these values, indicating underlying cardiac issues. table 2 bandwidth features of the imfs for sinus-rhythm ecg and cardiac disorders ecg signals database signal type bam (×10³ hz) bfm (hz) imf1 imf2 imf3 imf1 imf2 imf3 ptb-db sinus-rhythm ecg 2.7458 2.5859 2.3925 195.042 130.0147 179.8747 cardiac disorders ecg 3.9992 2.2205 1.8627 254.3380 230.9884 164.7964 mit-bih sinus-rhythm ecg 2.25966 2.315662 2.253651 201.8384 206.8406 201.3016 cardiac disorders ecg 1.908506 3.423781 3.336431 170.4724 305.8205 298.0181 the first three imfs in both datasets have the same bam and bfm values for sinus-rhythm ecg signals. however, cardiac disorder ecg signals show noticeable increases in bam and bfm values in comparison to normal sinus rhythm signals. this increase reflects the greater complexity and irregularity of the signal caused by arrhythmias such as atrial fibrillation and ventricular fibrillation. the results demonstrate that cardiac disorder ecg signals, especially when arrhythmias are present, exhibited higher bam and bfm values. these features are essential for differentiating between sinus-rhythm and cardiac disorders events, which builds the foundation for accurately classifying and diagnosing cardiac diseases. 3. results and discussion the best utilisation of search space by any of the optimization algorithms makes it efficient not just in finding the optimal solution but also in getting those values in a quick time. keeping these things, the prime objective is to enhance the outcome of eemd with the application of two nature-inspired population-based optimization algorithms, below are the results obtained. very appreciable work done by woa is its quick convergence strategy and also it getting reflected in our application, which resulted in a convergent outcome in just 15~20 iterations as compared to 35~45 iterations for pso. 632 a. bakshi, m. panigrahy, j.k. das 3.1. optimization case study as stated, two population-based bio-inspired optimization techniques are considered for the analysis of the impact of convergence and minimum cost value. the below figure shows the path of convergence for the two optimization algorithms pso and woa. in fig. 5(a) and (b), it is evident that the proposed woa-eemd-dt is performing well with respect to error convergence for both datasets. the primary objective of using woa has been realized with a quick convergence from the 22nd iteration as shown in figure 5(a) for the mit-bih dataset and at the same time for the ptb dataset it converges from the 17th iteration shown in fig. 4(b). whereas in the case of pso it converges from 35th and 47th iterations for the mit-bih and ptb datasets, respectively. considering this fact, a state-forward comparison has been made with the optimized eemd and is discussed below sections. (a) (b) fig. 5 the convergence curve evaluation criteria: to assess the effectiveness of the optimized feature extraction technique, we evaluated the dt and svm classifiers using five standard criteria: accuracy (acc), precision (pr), recall (re), f-score and sensitivity (sp). these criteria are defined as follows: (21) (22) (23) (24) (25) optimized eemd feature extraction using bio-inspired optimization algorithms... 633 where tp and tn denote the total number of correctly identified true positive and true negative events, respectively. conversely, fp and fn refer to the number of incorrectly identified positive and negative events, respectively. 3.1.1. psoeemd in fig. 6(a), we present a performance comparison of the classifiers under consideration, in addition to eemd and pso-eemd. it clearly shows remarkable progress in the performance of pso-eemd-dt as compared to eemd-dt. similarly, fig. 6(b) shows enhanced performances for pso-eemd-svm as compared to eemd-svm while processing the mit-bih dataset. the performances can be analyzed even better from the values expressing the importance of pso-eemd over simple eemd all performance measures. with an accuracy of 86%, pso-eemd depicts a good feature extraction process as compared to 80% in the case of simple eemd. the performance measures shown here are to show the improvisation in result without proper pre-processing and an improvement of 6% is considered better here. (a) (b) fig. 6 the performance measure for pso-eemd (a) for dt classifier (b) for svm classifier on mit-bih dataset 634 a. bakshi, m. panigrahy, j.k. das (a) (b) fig. 7 performance measure for pso-eemd (a) for dt classifier (b) for svm classifier on ptb dataset similarly, figure 7(a) represents the performance comparison of both the classifiers considered along with eemd and pso-eemd. the performances for the ptb dataset also show better results for pso-eemd than in the case of mit-bih. it also has been shown that pso-eemd outperforms simple eemd while considering features for both the classifiers showing an accuracy level of 83.3%. 3.1.2. eemd-woa to check the impact of advanced bio-inspired optimization techniques, further analysis has been done using the whale optimization algorithm (woa). optimized eemd feature extraction using bio-inspired optimization algorithms... 635 (a) (b) fig. 8 the performance measure for woa-eemd (a) for dt classifier (b) for svm classifier on mit-bih dataset the performance of the spiral tracking path of the whale optimization algorithm not only shows better performance measures and ensures quick convergence compared to improved time complexity. fig. 8 (a) shows better performance for the dt classifier as compared to svm with the woa algorithm shown in fig. 8 (b) for the mit-bih dataset. fig. 9 further highlights the advantage of woa-eemd-dt. it achieves 100% accuracy compared to woa-eemd-svm's 66.67%. 3.2. comparison of pso-eemd and woa-eemd a comparative analysis of pso-eemd and woa-eemd reveals that the fastconverging nature of woa helps achieve better performance in shorter execution times. this suggests that the limitation of using optimization in terms of time complexity can be mitigated with a more efficient optimization technique like woa. table 3 reflects the improvement in different performance measures when using woa with the mit-bih dataset. woa algorithm-based dt and svm classifiers outperform those using pso-optimized eemd. as shown in figure 7(a), the results are consistently better with woa-eemd compared to pso-eemd, achieving an accuracy level of 91%. 636 a. bakshi, m. panigrahy, j.k. das (a) (b) fig. 9 performance measure for woa-eemd (a) for dt classifier (b) for svm classifier on ptb dataset table 3 performance comparison of pso-eemd and woa-eemd for mit-bih dataset pso-eemd woa-eemd decision tree (%) svm(%) decision tree (%) svm(%) accuracy 86 82 91 85 precision 88 88 94 92 recall 84.62 78.57 88.68 80.7 f-score 84 76 88 78 specificity 86.20 83.02 91.26 85.98 optimized eemd feature extraction using bio-inspired optimization algorithms... 637 table 4 shows the improvisation while using woa for the ptb dataset. and it very effectively shows the same improvisation as in the case of the mit-bih dataset. this leads to the establishment of woa-eemd-dt as the best-proposed approach. table 4 performance comparison of pso-eemd and woa-eemd for ptb dataset pso-eemd woa-eemd decision tree(%) svm(%) decision tree(%) svm(%) accuracy 83.33 83.33 98.94 66.67 precision 67 100 98.34 100 recall 100 70 100 60 f-score 80 66.67 95.49 33 specificity 100 85 100 75 4. conclusion in conclusion, this study demonstrates the efficacy of optimized eemd for enhanced ecg signal analysis. key achievements include devising a fitness function to improve eemd consistency, employing bio-inspired optimization for robust decomposition, and proposing a novel feature extraction approach that distinguishes amplitude and frequency modulation characteristics. the emd technique has already proven effective in handling the complex information within ecg signals. this work enhances emd by exploring hidden hyperparameters in eemd and optimizing them over a large search space to strengthen the decomposition process. our approach verifies that eemd decomposition performs better with specific noise used for the ensemble. furthermore, we obtained that using the optimized eemd feature extraction technique can achieve an improved accuracy of +6% compared to simple eemd. the process can further be improvised with better machine learning and deep learning classifiers. in our work, we focused on the initial step of dealing with ecg signals rather than the classifiers. still, without using any of the pre-processing steps we achieved an accuracy level of 91% and 98.94% for the mit-bih and ptb datasets, respectively. significant improvements in the specificity of 91.26% and 100% are also recorded for mit-bih and ptb datasets, respectively. this indicates that selecting more robust classifiers and an advanced optimization strategy for the developed objective function can yield even better results. overall, this study significantly advances ecg analysis by enhancing decomposition reliability. the presented framework helps mitigate perturbations while retaining modulation characteristics essential for pathophysiological insights. future efforts will focus on translating these methods for automated annotation of cardiac disorder beats and infarction detection, thereby assisting clinicians through intelligent ecg interpretation. references [1] l. holmstrom, h. chugh, k. nakamura, et al., "an ecg-based artificial intelligence model for assessment of sudden cardiac death risk", commun. med., vol. 4, p. 17, 2024. [2] m. hassaballah, y.m. wazery, i.e. ibrahim, a. farag, "ecg heartbeat classification using machine learning and metaheuristic optimization for smart healthcare systems", bioengineering, vol. 10, no. 4, p. 429, 2023. 638 a. bakshi, m. panigrahy, j.k. das [3] c. satheesh pandian, a. m. kalpana, "hybdeepnet: ecg signal based cardiac arrhythmia diagnosis using a hybrid deep learning model", information technology and control, vol. 52, no. 2, pp. 416– 432, 2023. [4] r. saravana ram, j. akilandeswari, m. vinoth kumar, "hybdeepnet: a hybrid deep learning model for detecting cardiac arrhythmia from ecg signals", information technology and control, vol. 52, no. 2, p. 433–444, 2023. [5] t.y. hou, m.p. yan, z. wu, "a variant of the emd method for multi-scale data", advances in adaptive data analysis, vol. 1, no. 4, pp. 483–516, 2009. [6] g. jager, r. koch, a. kunoth, r. pabel, "fast empirical mode decompositions of multivariate data based on adaptive spline-wavelets and a generalization of the hilbert–huang-transform (hht) to arbitrary space dimensions", advances in adaptive data analysis, vol. 2, no. 3, pp. 337–358, 2010. [7] g. rilling, p. flandrin and p. goncalves, "on empirical mode decomposition and its algorithms", in proceedings of the ieee-eurasip workshop nonlinear signal image process, 2003, pp. 8–11. [8] k. polat and s. gunes, "classification of epileptiform eeg using a hybrid system based on decision tree classifier and fast fourier transform", applied mathematics and computation, vol. 187, no. 2, pp. 1017– 1026, 2007. [9] t. y. hou, z. shi, "data-driven time–frequency analysis. applied and computational harmonic analysis", vol. 35, no. 2, pp. 284–308, 2013. [10] z. wu, & n. e. huang, "ensemble empirical mode decomposition: a noise-assisted data analysis method", advances in adaptive data analysis, vol. 01, no. 01, pp. 1–41, 2009. [11] s. mirjalili and a. lewis, "the whale optimization algorithm", advances in engineering software 95, pp. 51–67, 2016. [12] el-ghazali talbi, metaheuristics: from design to implementation, john wiley & sons, 2009. [13] j. kennedy and r. eberhart, "particle swarm optimization", in proceedings of icnn'95 international conference on neural networks, perth, wa, australia, 1995, vol.4, pp. 1942–1948. [14] a.l. goldberger, l. a. amaral, l. glass, j. m. hausdorff, p. c. ivanov, r. g. mark, j. e. mietus, g. b. moody, c. k. peng, h. e. stanley, physiobank, physiotoolkit, and physionet: components of a "new research resource for complex physiologic signals", circulation, vol. 101, pp. 215–220, 2000. [15] a. for the advancement of medical instrumentation et al., "testing and reporting performance results of cardiac rhythm and st-segment measurement algorithms", the association, ansi/aami ec38, 1999. [16] p. dehkordi, a. garde, b. molavi, j. m. ansermino, & g. a. dumont "extracting instantaneous respiratory rate from multiple photoplethysmogram respiratory-induced variations", frontiers in physiology, vol. 9, pp. 1–10, 2018. [17] a. garde, w. karlen, p. dehkordi, j. ansermino and g. dumont, "empirical mode decomposition for respiratory and heart rate estimation from the photoplethysmogram", computing in cardiology, pp. 799– 802, 2013. [18] j.a. goldbogen, a.s. friedlaender, j. calambokidis, m.f. mckenna, m. simon, d.p. nowacek, "integrative approaches to the study of baleen whale diving behavior, feeding performance, and foraging ecology", bioscience, vol. 63, no. 2, pp. 90–100, 2013. [19] h. ye, j. zhu, y. cheng, d. xue, b. wang, & y. peng, "ppg based respiration signal estimation using vmdpca", in proceedings of the 24th international conference on automation and computing (icac), 2018, pp. 1–5. [20] b. van der pol. "the fundamental principles of frequency modulation part iii: radio and communication engineering", j. inst. electr. eng., vol. 93, pp. 153–158, 1946. [21] g. rilling and p. flandrin, "one or two frequencies? the empirical mode decomposition answers", ieee transactions on signal processing, vol. 56, no. 1, pp. 85–95, 2008. facta universitatis series: electronics and energetics vol. 32, no 1, march 2019, pp. 105-118 https://doi.org/10.2298/fuee1901105k parallel overloaded cdma crossbar for network on chip ashok kumar k, dananjayan p department of ece, pondicherry engineering college, puducherry, india abstract. for high performance of network on chip (noc), code division multiple access (cdma) technique is used recently due to its fixed communication delay, reduced area utilisation and low power consumption. the cdma system uses walsh based spreading code which improves the bandwidth efficiency. on the contrary, it is not effective when the number of nodes present in the system increases. overloaded cdma (ocdma) is presented for such large network systems. in this paper, ocdma crossbar is modified and advanced with parallel encoding and decoding operation using orthogonal gold codes for improving the speed of crossbar thereby obtaining high performance in noc switch. a modified crossbar consisting of extra processing elements is used to enhance the performance of noc based system on chip (soc) system. this work is simulated on xilinx tool and implemented in vertex-6 (xc6vlx760) field programmable gate array (fpga) device. the proposed work is implemented for four ports, eight ports and sixteen ports with deterministic x-y routing algorithm in 3 3 noc design with mesh topology. this noc switch shows 9.79% improvement in delay and shows 20.76% improvement in power consumption when compared to the existing cdma nocs for 8 bit data packet. key words: cdma, gold code, noc, arbiter, fifo buffer, fpga. 1. introduction as the end user requirements have increased, integrated circuits have scaled down over the past few decades. according to itrs [1], the communication issues have evolved due to the down scaling of technology. existing communication protocols like the bus technology, shared bus and point to point technology which achieves high performance in chip multiprocessor (cmp) has inherent drawback while sharing the resources [2]. hence these protocols do not meet the performance requirements of system on chip (soc) [3]. network on chip (noc) is a scalable communication paradigm which provides high performance in cmp with the aid of parallel processor. however, when the number of processors increases, the design of noc becomes complicated and affects the communication latency, area occupancy and power consumption. conventional noc received april 24, 2018; received in revised form july 17, 2018 corresponding author: ashok kumar k department of ece, pondicherry engineering college, puducherry, india (e-mail: kashok483@gmail.com) 106 a. k. k, d. p switch has five input port, five output port (four directional and one local) and crossbar with control module (arbiter). the four bi-directional ports are connected with neighboring switches for transfer of data between the source and destination [4]. the local port is used as a processing element (pe) and is responsible for communication between the port and crossbar. this paper proposes a new method for noc with fixed latency, reduced system cost and power consumption. recently, cdma is used to transfer data between the input and output in noc switch [5]. fig.1 depicts the structure of cdma noc switch. noc switch has neither solid design nor standard protocol and hence can be designed flexibly to meet the user requirements. the proposed method is implemented for noc switch using a cdma crossbar with 2-d mesh topology and 3 3 noc designed with deterministic x-y routing algorithm. the routing of data initially searches along the x-direction of destination router and proceeds to the y-direction. depending on the destination availability, the distance between the source and destination switch is calculated and transferred to the neighboring switches. since each port has fifo buffer, store and forward packet switching [6] is used for the proposed work. the crossbar is the key module for noc switch as it affects the switch performance and provides multiple access for the data packets. the primary multiple access technique, time division multiple access (tdma) is simple but not efficient for cmp. in tdma only one port sends the data packet simultaneously leaving the other ports to wait until it releases the physical link, thereby increasing the packet latency. space division multiple access (sdma) a dedicated path is created between the ports. cdma is another traditional multiple access technique where the spreading code enables the medium access sharing. this method provides error-free data in cmp and reduces the multiple access interference (mai) by appropriately selecting the spreading code sequence with low cross correlation. the performance of cdma depends on its spreading code and hence choosing the sequence is crucial. recently, overloaded cdma is the most suitable medium sharing technique for cmp which increases the performance of classical cdma crossbar with more fig. 1 noc switch architecture with cdma crossbar of n input and n output ports parallel overloaded cdma crossbar for network on chip 107 available spreading codes. most of the cdma systems use walsh codes, but these codes are suitable only for noc system with fewer processor. walsh code generator provides sequences, out of which only sequences can be used for spreading. on the other end, the orthogonal gold codes are of much use for noc system with more pes. the rest of the paper is as follows, section 2 discusses the related work of cdma interconnects. section 3 describes the classical cdma operation with mathematical expressions. section 4 presents the generation of orthogonal gold codes. section 5 presents the noc router with parallel ocdma encoder and decoder. section 6 shows the implementation of ocdma system, and finally, the conclusion is presented in section 7. 2. related work recently, cdma technique is favored for crossbar of noc switch because of its fixed latency and reduced system cost. kim et al. [7] proposed and implemented walsh based cdma crossbar. this walsh based cdma gave suitable results for noc switch in terms of throughput and latency. star-mesh based noc switch is suggested to control large systems which have seven resources connected to the local switch and each local switch is linked to the central switch. this walsh based cdma gave suitable results for noc switch concerning throughput and latency. wang et al. [8] nominated a cdma technique for both synchronous and asynchronous system such as globally asynchronous locally synchronous (gals) scheme. a 6-node noc was simulated and the results were compared with ptp noc. kim et al. [9] advanced the source synchronous cdma interconnect (sscdma-i) thereby reducing the system overhead compared to tdma bus. nikolic et al. [10] presented two types of bus wrappers i.e. master wrapper along with arbiter module and slave wrapper with peripheral modules for cdma based shared bus architecture. the transaction delay has reduced by bundling the different connections as single, two and four to reduce the parallel lines. halak et al. [11] initiated dynamic assignment of spreading codes for cdma users and developed a novel cdma protocol (d protocol) for dynamic assignment. two different architectures were proposed for cdma i.e. serial cdma implementation, where the data chips from all users are arithmetically summed according to their bit position and in parallel cdma implementation where the data bits are transferred parallelly in the same cycle. the serial and parallel implementation schemes are compared with traditional cdma, mesh based noc and tdma bus and it is observed that the clock frequency was improved for parallel cdma implementation. wang et al. [12] preferred standard basis (sb) code in place of walsh based codes. the sb method duplicates the tdma technique as each spreading code consists only a single chip of one and the remaining chips are zeros. this method further decreases the latency and maximizes the throughput of noc. ahmed et al. [13] presented the overloaded cdma crossbar interconnect to improve the performance of noc. two different types of overloaded cdma interconnect (oci) have been suggested i.e. tdmaoverloaded cdma interconnect (t-oci) and parallel-overloaded cdma interconnect (p-oci) is compared with bus wrappers [10] and parallel implementation cdma [11]. by combining p-oci and t-oci, the speed of cdma crossbar is improved whereas the overall system gets complicated in terms of area utilization. to improve the results of ocdma, this paper proposes an encoder and decoder operated in parallel. by advancing 108 a. k. k, d. p the existing work, this paper has provided better results for noc with cdma crossbar. to the best of knowledge, this paper is the first to investigate ocdma crossbar with orthogonal gold codes. 3. classical cdma as cdma provides the same bandwidth for all users, it is more popular than tdma or sdma. among the various spread spectrum techniques in literature, direct sequence spread spectrum (dsss) is the dominant method for multiple access. dsss-cdma is a method of multiplexing using unique high-frequency spreading codes. two types of spreading codes used for cdma are the orthogonal codes and non-orthogonal codes. the orthogonal walsh-hadamard code is frequently used in cdma systems as the crosscorrelation is zero and the impulse autocorrelation property is unity. pn sequence, gold code and kasami code are the few non-orthogonal spreading codes in use. these codes are used in encoding and decoding of original data and protecting from interference in cdma. in cdma encoder, the input data signal is applied to the modulator with unique spreading code, and these modulated signals are added arithmetically before transmission. the encoded signal is transmitted through the channel and received in the decoder module. the decoder demodulates the encoded signal with the same unique spreading code. the encoded multi-sum signal is either accumulated in positive accumulator register (if spreading code bit is 0) or negative accumulator register (if spreading code bit is 1) and these accumulated values are sent to the comparison module. after comparison, if the positive accumulator value is high the transmitted data signal is 1 otherwise the signal is 0. unique spreading codes are assigned to each user to avoid multiple access interference. the different spreading code protocols are reviewed and analyzed [8]. among the several protocols, transmitter based protocol (t protocol) gives better performance by assigning unique spreading code to cdma system. table 1 describes the conventional cdma operation with suitable notation. table 1 definition of notations notation description data bit of jth sender for ith code sequence orthogonal code ith sequence for jth sender encoded chip value of ith code and jth sender arithmetic sum of ith code sequence positive register value for ith value of code sequence negative register value for kth value of code sequence n number of code sequences the data sent by each sender is xored with the unique code to generate the chip. these chips are added arithmetically to get the multi-bit sum. this multi-bit sum is sent to the decoder for reconstruction of original data. the encoding process is shown mathematically in the below equations. parallel overloaded cdma crossbar for network on chip 109 (1) ∑ (2) where means xor operation. the decoding process is expressed mathematically as below and (3) ∑ and ∑ (4) where pr and nr are positive and negative registers, also pac and nac are positive register with an accumulator and negative register with an accumulator. problem statement cdma through its multiple accesses technology enables number of transmitters to transfer data simultaneously to number of receivers. for efficient data transfer, spreading sequences must satisfy the orthogonal, balance and run-length properties. though orthogonal sequence like walsh code is used for improving bandwidth utilization, the code utilization of it is less, the cross correlation between some shifts is not zero and the total delay for generating the code is not fixed. a 16 node cdma needs 32-bit walsh code as 16-bit walsh code provides only 15 orthogonal sequences and hence it leads to wastage of code sequences in the system [12]. the proposed work provides a suitable solution for this problem. the contributions of the proposed work is as follows (i) implementing cdma with orthogonal gold codes to increase the code utilisation and to reduce the mai. (ii) modifying and advancing a novel approach of ocdma system and adding extra pes to the router for improving the performance of noc [13]. (iii) simulating the proposed design in xilinx software for synthesis and comparison of the results with existing work. 4. generation of spreading code for cdma system as described above, walsh code is not suitable for high data rate systems. therefore, instead of walsh code orthogonal gold code is implemented. the generation of gold code is through proper selection of pn-sequences used as initial values for linear feedback shift registers (lfsr) [14]. fig.2 describes the generation of gold code with proper msequence. gold sequence generator gives codes with a n bit sequence. experiments show that orthogonal gold codes are obtained by affixing „0‟ to the non-orthogonal gold sequence. further, there is no wastage of code sequences in gold code set and the sequences are utilized efficiently. hence, orthogonal gold sequences are suitable for huge node (port) noc system whose data width is 16, 32, and 64 bits. nevertheless with regard to ber, orthogonal gold codes provide similar performance compared to walsh codes. 110 a. k. k, d. p fig. 2 generation of gold code sequence with correct selection of pn-sequences 5. noc router with parallel ocdma crossbar each pe of noc is connected with network interface (ni) i.e. either transmit ni or receive ni. the input port consists of fifo and finite state machine (fsm) controller, and the fsm controller will direct the data packets based on fifo [16]. the data is divided into packets before being transferred to the fifo from transmitting ni. the size of fifo is decided by the width of the data packet. the distributed round robin arbiter provides grants for the packets which are ready to transmit from fifo. the arbiter selects the input port and output port based on the fifo memories. the transmit ni will assert the request to the arbiter, then depending on the fifo memory the arbiter will provide the grants in round robin fashion. hence only one data packet will be sent to the cdma system, thereby avoiding the conflict between data packets during transmission. from ni, the data packets are sent to parallel to serial converter (pts) module, and pts provides the data packets serially to the encoder of cdma. then, the serialized data is encoded with spreading code and the bits are summed arithmetically to form multi-bit sum. this multi-bit sum is sent to the decoder module where the original data bits are reconstructed based on decoder logic and then these serialized data are forwarded to the serial to parallel converter (stp) module. stp converts the data bits into data packet again, and the data packets are sent to the received ni of the output port. finally, the receive ni sends the data packets to the fifo port. the store and forward packet switching is flexible for the proposed noc system as the ports are using fifo. similarly, ocdma replaces the crossbar of noc switch configuration. the deterministic x-y routing protocol is used for data transfer from source noc switch to destination switch as it is straightforward, flexible for 2-d mesh design and free from deadlock. the control block which consists of arbiter is used to operate the spreading sequence assignment and provide data transaction permission for the winning ports. the concept of overloaded cdma system is implemented in wireless communication networks for increasing the number of trans/receiving ports without increasing the system complexity [13]. the difference between ocdma technology and standard cdma is in terms of code length i.e. l>n1. l is the code length for ocdma and n1 is the code length for classical cdma. ocdma facilitates multi-bit port transmission with minimal changes to traditional cdma system. hence, ocdma system needs long sequence generator such as gold code generator. parallel overloaded cdma crossbar for network on chip 111 the proposed work is implemented for noc switch with cdma without increasing the system complexity, fixed latency and limited system cost. to improve the bandwidth and reduce the area overhead, extra pe is connected to each noc switch which reduces the requirement of more switches and also reduces the area overhead of per-pe. the fact that the increasing number of pes per noc switch increases the communication requests there by increasing the inter communications links [15]. the modification of standard cdma system is required to achieve these objectives. the total encoding or decoding process of cdma depends on the spreading code length which equals to clock cycles for one data transaction. the completion of a single transaction requires n clock cycles which are also synchronized with the counter. fig. 3 n input and n output ports of noc switch with ocdma crossbar building blocks of ocdma crossbar the ocdma crossbar is designed of three main components: (i) encoder (ii) decoder and (iii) control block and these modules are shown in fig. 3 along with components of noc. the control block mainly controls the data transmission in terms of selection of proper input port, assigning the code sequence and counter for measuring the clock cycles. 1) encoder module the operation of encoding process is same as conventional cdma but the data is encoded bit wise in parallel manner. the multi-bit sum of data is transferred to the decoder module parallelly [11] therefore one clock cycle is sufficient for the completion of the process of encoding one bit of nodes. the data chips are xored and added simultaneously from the ports hence the proposed encoder reduces the clock cycles for completion of the encoding process than the standard cdma. fig.4 shows the parallel encoding method for ocdma with orthogonal gold code. the nodes send the data bits serially to the encoder block, and then the multi-bit sum is sent parallel to the decoder block. the cdma requires total of 24 bit to transfer original data of 8 bit because multisum of each bit requires 3 bit when it adds arithmetically. 112 a. k. k, d. p fig. 4 parallel process of encoding in ocdma crossbar 2) decoder module fig. 5 describes the parallel decoding process of ocdma. the parallel multibit sum is received by the decoder module through the channel and the encoded sum value first reaches the de-multiplexer stage. the encoded data bit is sent to the positive register (if spreading code is zero) or negative register (if spreading code is one), then the values of fig. 5 parallel process of decoder architecture of ocdma crossbar parallel overloaded cdma crossbar for network on chip 113 both registers are accumulated. finally, these positive accumulated values and negative accumulated values are sent to the comparison module. the original data bit would be 1 if the pac is high else the original data bit is 0. these registers are usually of length n/2 because of the balance property of the orthogonal spreading code. therefore, both the registers are of same length which is half of the spreading code length. the decoding process is executed parallelly for each spreading code of the multi-bit sum. 3) control block at the initial stage of data transfer, the control block provides spreading code sequences for the transmitter and then the transmitter transfers the code to the receiver. the arbiter eliminates the congestion and provides grant signal to input port for transferring the data to the crossbar by round robin fashion [15]. the counter within the arbiter module initializes the spreading sequences for all the senders. the control block sends the handshake signals to verify codes of the corresponding encoder and decoder. the code pool will assign a unique spreading code to each transmitter when it receives a request from the arbiter module. fig.6 describes the encoding and decoding process of 8 bit orthogonal gold code. the sender sends the data bit serially and orthogonal codes are assigned to each sender by the gold code generator. the data bit is xored with code bit parallelly and the encoded first bit of each sender is sent to the decoder section. the first bit of the code for each sender is zero but the multi-bit sum of the first encoded data is four after xoring with data bits. this process continues for each sender and the multi-bit sum is calculated for each encoded bit. the multi-bit sum is sent to the accumulators depending on the code bit value. for decoding of first bit, the positive accumulator register is more than negative accumulator register hence the data bit is re-constructed as zero. the process continues until the system gets the 8-bit original data. 6. implementation the simulation and synthesis results are presented in terms of area, delay and power consumption for the parallel ocdma crossbar of noc switch with 2 pe. the proposed work is simulated in xilinx software and implemented on vertex6 (xc6vlx760) fpga. the implementation of noc switch is carried out using different ocdma crossbar with spreading code lengths n= {4, 8, 16} and the comparison is also provided with existing noc switches. the parameters used for simulation of noc switch are tabulated in table 2. table 2 simulation parameters simulation parameter values topology 2d mesh arbiter distributed round robin switching store and forward routing algorithm minimal adaptive crossbar ocdma data packet length 8 bit buffer yes simulator riviera-pro traffic scenario uniform random traffic distribution poisson 114 a. k. k, d. p fig. 6 transmission and reception of ocdma with 8 orthogonal gold codes the performance metrics considered are area utilization (slice registers, slice luts and lut-ff pairs), maximum clock frequency (delay) and power consumption (dynamic power). the encoder and decoder of ocdma is implemented individually and applied to the crossbar of noc switch. fig. 7 shows the implementation results for 4,8,16 nodes of ocdma crossbar for noc switch.from fig. 7 (a), it is evident that the area utilization is increasing with increasing number of bits because the noc switch requires high architecture for transmission and reception of data packet. inference from fig. 7 (b) concludes that the maximum clock frequency is decreasing with increase of data packets because of the converters (stp and pts) present in ni. the power consumption of this noc switch increases with its data packet because the transition activity is more when the data is undergoing stp/pts block, hence dynamic power consumption also increases and it is shown in fig.7(c). the throughput ( ) is calculated as (5) where nc is the number of required clock cycles, nbpp is the number of bits in a packet, npe is the number of received packets at the pe and tc is the clock period for complete data transmission. from fig. 7(d), it is inferred that the throughput is increasing with increasing data because more pes are receiving data packets within the specified clock period. to improve the bandwidth and reduce the area overhead, extra pe is connected to parallel overloaded cdma crossbar for network on chip 115 each noc switch which reduces the requirement of more switches and also reduces the area overhead of per-pe. (a) (b) (c) (d) fig. 7 (a-d) implementation results in terms of area utilization, maximum clock frequency, power consumption and throughput for noc switch with ocdma crossbar of 4, 8, 16 nodes table 3 shows the comparison results for the 8-bit different cdma crossbar of noc switch in terms of area utilization (lut-ff pairs), delay (ns) and power consumption (mw) which are implemented in vertex-6 fpga device. the proposed work provides better results than wb-cdma [7], sb-cdma [12] and ocdma [13] as the encoding and decoding processes are executed in parallel. this parallel ocdma crossbar switch requires less area utilization because of orthogonal gold codes used for spreading and elimination of selector (multiplexor) and additional non-orthogonal sequence generator in ocdma [13]. even though, the number of spreading codes is more, the area overhead of parallel ocdma is lesser than ocdma [13] because of pe clustering which reduces the number of required switch for complete data transfer from source port to destination port. table 3 comparison of parallel ocdma with existing cdma crossbar of 8-bit data packet per switch cdma(8-node) area (no. of lut-ff) delay(ns) power consumption(mw) wb-cdma [7] 782 2.82 17.53 sb-cdma [12] 684 2.71 15.21 ocdma [13] 692 2.96 11.46 parallel ocdma 663 2.673 9.08 116 a. k. k, d. p fig. 8 (a-d) shows the comparison of parallel ocdma with ocdma [13] for different number of nodes. from the figure, it is inferred that the performance of parallel ocdma is improved compared to the existing work because of efficient code utilization and pe clustering. this crossbar switch shows 9.79% improvement in delay than ocdma [13] with minor modifications in simple cdma operation. the major power consumption is due to buffers in the bi-directional ports. but in the proposed method encoder and decoder modules are placed in ni of noc, hence buffers are not operated when the data packets are encoding and decoding. consequently 20.76% improvement in power consumption is obtained than ocdma [13]. (a) (b) (c) (d) fig. 8(a-d) comparison for ocdma [13] with parallel ocdma for different number of nodes in terms of area utilization, clock frequency, power consumption and throughput the parallel ocdma noc switch with 2pe extended for 3 3 mesh based noc system which of 9 bi-directional routers and 18 pes. for analyzing the packet latency and throughput, the mesh based noc is simulated on riviera pro for windows. number of experiments are conducted in uniform-random traffic pattern for observation of these performance metrics. the data packet latency (clock cycles) performance for noc with 2 pe is obtained and compred with that of noc switch with single pe as shown in fig.9 (a). from this figure, it is evident that the proposed work shows reduced packet latency because of parallel processing of encoder and decoder for transmission of the data packet. throughput performance of noc switch with 2 pe is also obtained and compared with parallel overloaded cdma crossbar for network on chip 117 that of noc switch with single pe. from figure, it is understand that as number of pe‟s increased, its latency and throughtput performances are improved. (a) (b) fig. 9 simulation results for network latency with injection load (a) and throughput with injection load (b) in uniform-random traffic pattern 7. conclusion this paper proposed the overloaded cdma crossbar for noc with parallel encoding and decoding process with walsh codes being replaced by orthogonal gold codes. a parallel encoder and decoder transfer the data in the same clock cycle hence the performance of proposed ocdma crossbar is increased. the results are improved with respect to latency, area usage and power consumption when compared with the existing cdma crossbars. the parallel ocdma crossbar switch showed 9.79% decreament in delay and showed 20.76% improvement in power consumption than ocdma [13]. in future work, noc switch will be present with different fault routing algorithms for handling permanent and transient faults. references [1] international technology roadmap for semiconductors 2012(www.itrs.net). [2] m. c. chiang, g. s. sohi, “evaluating design choices for shared bus multiprocessors in a throughput oriented environment,” ieee transactions on computers, vol. 41, no. 3, pp. 297-317, march 1992. [3] d. sigüenza-tortosa, t. ahonen, and j. nurmi, “issues in the development of a practical noc: the proteo concept,” integretion the vlsi journal, vol. 38, no. 1, pp. 95–105, october 2004. [4] t. bjerregaard and s. mahadevan, “a survey of research and practices of network-on-chip,” acm computing surveys, vol. 38, no. 1, pp.1-50, march 2006. [5] s. a. hosseini, o. javidbakht, p. pad, and f. marvasti, “a review on synchronous cdma systems: optimum overloaded codes, channel capacity, and power control,” eurasip journal of wireless communications networking, vol. 1, pp. 1-22, december 2011. [6] l. benini and d. bertozzi, “xpipes: a network-on-chip architecture for gigascale systems-on-chip,” ieee circuits and systems magazine, vol. 4, no. 2, pp. 18-31, september 2005. [7] d. kim, m. kim, and g. e. sobelman, “cdma-based network-on-chip architecture,” in proceedings of the ieee asia-pacific conference circuits systems, december 2004, pp. 137-140. 118 a. k. k, d. p [8] x. wang, t. ahonen, and j. nurmi, “applying cdma technique to network-on-chip,” ieee transactions on very large scale integration systems, vol. 15, no. 10, pp. 1091-1100, october 2007. [9] j. kim, i. verbauwhede, and m.-c. f. chang, “design of an interconnect architecture and signaling technology for parallelism in communication,” ieee transactions on very large scale integration systems, vol. 15, no. 8, pp. 881-894, august 2007. [10] t. nikolic, m. stojcev, and g. djordjevic, “cdma bus-based onchip interconnect infrastructure,” microelectrons reliability, vol. 49, no. 4, pp. 448-459, april 2009. [11] b. halak, t. ma, and x. wei, “a dynamic cdma network for multicore systems,” microelectrons journal, vol. 45, no. 4, pp. 424-434, april 2014. [12] j. wang, z. lu and y. li, “a new cdma encoding/decoding method for on-chip communication network,” ieee transactions on very large scale integration systems, vol. 24, no. 4, pp. 1607-1611, april 2016. [13] k. e. ahmed, r. rizkand m. m. farag, “overloaded cdma crossbar for network on chip,” ieee transactions on very large scale integration systems, vol. 25, no. 6, pp. 1842-1855, january 2017. [14] l. hanzo and t. keller, “ofdm and mc-cdma: a primer,” © 2006 john wiley & sons, ltd. isbn: 0470-03007-0, 2006. [15] r. kumar and a. gordon-ross, “macs: a highly customizable low-latency communication architecture,” ieee transactions on parallel and distributed systems, vol. 27, no. 1, pp. 237-249, january 2016. [16] a. k. k, p. d., “a survey for silicon on chip communication”, indian journal of science and technology, vol. 10, no. 1, january 2017. facta universitatis series: electronics and energetics vol. 32, no 2, june 2019, pp. 211-229 https://doi.org/10.2298/fuee1902211m analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming * mladen mileusnić, branislav pavić, verica marinković-nedelicki, predrag petrović, dragan mitić, aleksandar lebl iritel a.d., belgrade, serbia abstract. in this paper we first briefly compare the performances of active jamming remote controlled improvised explosive devices activation using wide-band noise and frequency sweep signal. frequency sweep is the most widely used technique intended for active jamming and we analyze its characteristics: 1) sweep speed, 2) conditions for certainly successful jamming, 3) successful jamming probability if jamming is not certainly successful, and 4) step of frequency change when frequency sweep is applied. the separate paper section is devoted to the successful jamming probability calculation in general. the attention is also paid to jamming probability determination when starting and ending sweep signal frequencies are varied. the initial research has been upgraded and extended. the presented results refer to jamming equipment development in iritel, but it is important to add that they are also applicable to the other similar jamming systems realizations. key words: jammer, remote controlled improvised explosive devices, frequency sweep, successful jamming probability, bit error correction 1. introduction today the world is faced with the growing challenges in the fight against terrorism. methods of terrorist attacks are constantly improved. it is the reason why devices for the fight against these attacks must follow changes in the applied techniques of attack. remote controlled improvised explosive devices (rcied) are widely used as the equipments intended for terrorism. such devices are activated by messages, which are transmitted from longer or shorter distances by wireless communications. the two most widely used jamming techniques against rcied activation are reactive and active jamming [2]. the advantage of reactive jamming is related to the lower level of emission power, because jamming signal is generated only when rcied activation message is detected in one intercepted channel. it is necessary to detect activation signal appearance received july 19, 2018; received in revised form october 3, 2018 corresponding author: aleksandar lebl iritel a.d., 11080 belgrade, batajniĉki put 23, serbia (e-mail: lebl@iritel.com) *the earlier version of this paper is awarded as the best one in the section telecommunications at the 5 th icetran conference, palić, 11-14 june 2018, [1]. 212 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl and its frequency, i.e. channel which must be jammed. on the contrary, active jamming supposes constant jamming signal transmission independent of activation signal existence. reactive jamming technique is more often applied in the last time [3] [10]. in the existing solutions fast fourier transform (fft) is usually used as fast and reliable detection algorithm [3], [4]. the pipeline of different operations when fft is applied to detection algorithm (signal samples collection, these samples processing, decision making) instead of multiplying hardware elements contributes to more reliable and faster rcied activation message detection even in the case when it is necessary to analyze frequency hopping signal [5]. a survey of problems arising in the realization of reactive jammers is presented in [4]. the greatest attention in [4] is devoted to time synchronization in the case of simultaneous operation of multiple jammers. the characteristics of some other detector types such as energy detector, matched filter detector, feature detector and detector based on the calculation of eigenvalues of the covariance matrix are theoretically compared in [6], [7]. contribution [8] deals with activation signals jamming in one specific network (ieee. 802.15.4), where message packet duration is very short (only about 350μs), thus causing necessity for a very short detection time. in general, the achieved detection time is less than 1ms in [9], and even about 200μs for the frequency range up to 6ghz in [10]. it is important to emphasize several problems, which may occur when active jamming is applied. the first one is that activation signal power at the rcied location may be very different, depending on the implemented techniques for message transmission and on the distance between activation message transmitter and receiver. the second one is that the operating frequency for signal transmission may be in very wide frequency range. in such situation the most reliable method for jamming realization is wide-band jamming signal generation. it means that available transmitter power is used in the whole frequency range. this high jamming power is therefore distributed into many available channels and, as a consequence, its level in each channel is relatively low. the jamming signal power in a channel with an activation signal is, perhaps, not enough to prevent rcied activation signal reception. the other possible, most often implemented signal generation method for active jamming is linear variation of jamming signal frequency (i.e. frequency sweep) [11]-[13]. in this, second case it is possible to concentrate significantly higher power in one channel where activation message is transmitted comparing to wide-band jamming. but, as jamming signal is not always present in each channel, there is a risk that generated sweep signal would not reach the desired channel in time, while activation signal is yet not finished. sweep jamming implementation is not limited only to rcied activation jamming. it may be also used for mobile telephony systems jamming [14]-[16]. the possibility to achieve the higher sweep speed [17] caused that sweep jamming becomes very popular and widely applied. in this way the benefits of sweep jamming in the area of power saving come to the fore. sweep jamming is today dominant technique of active jamming and this is the reason to devote significant attention in this paper to its analysis. the relation of necessary jamming signal power for wide-band and sweep jamming depends on several factors: the desired jamming probability, implemented technique (modulation) for rcied activation message transmission, level of environmental noise, and so on. the results presented in our analysis in [18] prove and explain that in the case of qpsk modulation for small values of bit error rate (ber) till ≈2.5% wide-band jamming is more efficient than sweep jamming. the conclusion is based on the fact that under such analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 213 conditions lower signal power is necessary to be implemented for wide-band jamming to achieve the same ber. but, such low values of ber are not important for jamming realization and for ber>2.5% sweep jamming is more efficient. for other psk modulation types the limit value of ber above which sweep jamming becomes more efficient than wideband jamming is ≈10% for bpsk and less than 1% for 8psk and 16psk. the power save increases with psk modulation level and it may reach even 11db for 16psk. the additional disadvantage of higher necessary power consumption for wide-band jamming is that jammer may be easier detected. as a consequence, there is a greater opportunity that personnel controlling jammer operation are exposed to enemy attack [19]. when comparing efficiency of wide-band jamming and sweep jamming, available literature is mainly concentrated on their qualitative comparison, or, in some cases, approximate quantitative results of such comparison are presented [20]. as for the knowledge of the authors of this paper, there is no such an analysis related to the ber value and the applied signal modulation type for rcied activation. the main purpose and the novelty of this paper is that it presents and analyzes different parameters of sweep jamming: 1. sweep speed; 2. the role of practical sweep jamming realization as step function instead of linear frequency change in jamming probability determination; 3. performances comparison of two different sweep jamming strategies; 4. jamming probability calculation when starting and ending jamming frequency are varied; 5. jamming probability calculation when different error detection and correction algorithms are applied. the method of frequency sweep realization for jamming rcied activation is presented in section 2 of this paper. the sweep speed is defined as the most important characteristic of this method. after that, successful jamming probability for frequency sweep signal implementation is determined in section 3. two methods of sweep signal generation considering jamming reliability are analyzed in section 4. section 5 explains the influence of starting and ending jamming frequency variation on the value of successful jamming probability. section 6 deals with the calculation of successful jamming probability when signal physical characteristics are such that reliable jamming is not guaranteed. at the end, section 7 presents conclusions. 2. sweep speed of rcied activation jamming signal there are two jamming signal characteristics, which must be considered to prevent successful rcied activation: jamming signal frequency and jamming signal level. jamming signal frequency must be equal to the activation signal one or in its proximity. the difference between activation and jamming signal frequency depends on several factors such as characteristics of rcied activation message receiver (its bandwidth and attenuation characteristic) and relation between amplitudes of jamming signal and rcied activation signal. in general, there are three possibilities in the analysis of jamming and activation signal levels at the place of rcied activation message receiver. first, if activation message signal level is greater than jamming signal level, jamming is unsuccessful. in other two 214 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl situations jamming is successful, but the reaction of activation message receiver is different. if jamming and activation signal levels have nearly the same values, rcied receiver detects activation message of no use due to its changed content. in the case that jamming signal level is significantly greater than the activation signal level, rcied receiver does not detect activation message, but only the jamming signal [21]. let us suppose that it is necessary to jam a signal, which may cause activation of rcied anywhere in a frequency band of total width w (in hz) [22]. the sweep jamming is applied in the same frequency bandwidth w=f2-f1, where f1 is the minimum and f2 is the maximum sweep signal frequency (figure 1). it can be supposed that jamming may be successful under the condition that jamming signal appears in the frequency band (channel) where activation signal is transmitted. it is assumed that successful jamming probability is pdist=1. the period of one sweep cycle is tsw. one channel width where activation signal is transmitted is c (channels c(1) and c(2) in figure 1). when jamming signal appears somewhere in this channel while rcied activation message is present (time interval tc in figure 1) and the condition related to level of two considered signals is satisfied, we shall suppose that jamming is successfully realized. in this moment we also suppose that jamming signal appears only once in the frequency band reserved for rcied activation message transmission in a time of this message duration. f f1 f2 c(1) c(2) t τsw w τmess tc fig. 1 rcied activation jamming when jamming signal frequency is linearly changed. sweep speed will be defined as frequency change speed: .sw sw w v t  (1) jamming probability will be pdist=1 if one cycle time of frequency change from f1 to f2 satisfies a condition: ,sw messt t (2) where tmess is rcied activation message duration. analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 215 it follows from eq. (1) and eq. (2) .sw mess w v t  (3) it is possible that jamming is not successful, although jamming signal frequency is in the proximity of activation message frequency and the condition related to signal levels is satisfied. in such a case it is necessary that jamming signal appears more than once (m times in our analysis) in a considered channel during message duration to achieve satisfactory rcied activation jamming probability. in such a case sweep speed must be increased. expression (3) is, consequently, changed to: .sw mess m w v t   (4) the value vsw for which it is valid the equating part of (3) and (4) defines lower limit of sweep speed to assure successful jamming. it is a time needed to guarantee that jamming signal at least once (in the case of (3)) or m-times (in the case of (4)) „hits“ the considered channel when its frequency sweeps. 3. successful jamming probability for frequency sweep implementation let us suppose that the condition from eq. (2) is not satisfied, i.e. that it is tmess1. in this case rcied activation signal jamming is not guaranteed, i.e. pdist<1. the probability of rcied activation jamming is: 1 .mess dist sw t p k t   (6) figure 2 presents successful jamming probability (pdist) as a function of one sweep cycle time interval (tsw) and message duration (tmess). the values of pdist are obtained on the basis of eq. (6) if it is satisfied the condition tmess≤tsw. if it is tmess>tsw, jamming signal frequency in any case crosses the frequency of rcied activation message at least once. that’s why in such situation is pdist=1, providing that other conditions for successful jamming are satisfied. 216 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl 0,001 0,003 0,005 0,007 0,009 0,02 0,04 0,06 0,08 0,1 0,3 0,5 0,7 0,9 2 4 6 8 1 0,01 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 tmess (ms) tsw (ms) pdist 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 2 rcied successful jamming probability as a function of sweep time and message duration. f f1 f2 c(1) c(2) t τsw w τmess tc=t∆ f∆ t∆ fig. 3 practical realization parameters of rcied activation jamming. practical realization of sweep signal generation differs from the presentation in the figure 1. instead of generation by linear frequency change, signal is generated as stepwise function. in this way it is realized an approximation of linearly variable signal frequency, as presented in figure 3. according to this figure, the basic data defined in implementation are time step (t∆) and frequency change step (f∆). these two values may be used to express sweep speed in the other manner as .sw f v t    (7) analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 217 if it is satisfied the condition ,f c  (8) jamming will be certainly successful. if not, there are two possibilities: 1. the value of generated frequency is in no moment in the frequency range dedicated to the considered channel (channel c(1) in the figure 3); 2. generated frequency coincides during some time interval with the frequency of a channel (interval tc in the figure 3, when signal in channel c(2) is jammed). in the first case jamming will be unsuccessful, while in the second case it will be successful. the aim of practical sweep signal generation is to approximate linear frequency change as much as possible. to achieve this, it is chosen the minimum value of t∆ (t∆min) which is allowed by applied hardware components [17]. the calculation is performed for such defined t∆ value. the details of implemented jammer solution are presented in [13]. let us suppose that we want to determine whether it is possible to assure successful jamming using the selected hardware component for sinusoidal signal generation. the first step in the analysis is to find the necessary number of frequency steps for linear approximation of frequency change. we have already emphasized in eq. (2) the necessary condition for such successful jamming. in the limiting case tsw=tmess, the number of frequency steps for linear approximation of frequency change is: min .sw s t n t  (9) the value of necessary frequency change step to (eventually) achieve successful jamming may be now determined on the base of eq. (8) and eq. (9) as: min . s sw w tw f c n t       (10) the conclusion of this short analysis expressed by eq. (9) and eq. (10) is that fast linear change of jamming frequency does not always lead to successful jamming. the jamming successfulness is also related to the characteristics of applied hardware components for jamming signal synthesis, namely to the possibility to achieve satisfactory short step for linear approximation of frequency change. it is possible that the time of one frequency sweep from the minimum to maximum frequency is satisfactory, but that one step of frequency change is still greater than one channel width (c), thus causing unreliable jamming. 4. comparison of jamming successfulness for two sweep signal generation methods there are two methods for sweep signal generation: 1. signal frequency is always generated from its minimum towards the maximum value and after reaching the maximum value, signal frequency immediately drops down to its minimum value; 2. signal frequency starts to linearly increase from its minimum value and when reaches its maximum, starts to linearly decrease towards the minimum usually at the same rate as it was previously in the increasing direction. 218 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl f t f1 f2 τsw τsw c(1) c(2) t f1 f2 τsw τsw c(1) c(2) f τmess τmess a) b) fig. 4 jamming possibilities of rcied activation signal for two methods of sweep signal generation. figure 4 presents these two methods for sweep signal generation. the first method is shown in figure 4a and the second one in figure 4b. two rcied activation messages are taken into account together with a sweep signal in both cases. rcied activation messages are located in two different frequency bands: c(1) and c(2). in this example message length (tmess) is equal to the sweep time (tsw). if a sweep signal is generated according to the first method, jamming is always successful, irrespective of the part of frequency range between f1 and f2 where rcied activation signal appears. however, if sweep signal is generated according to the second method, jamming may be successful for a signal in a channel c(2), where jamming signal two times „hits“ the channel with activation message. in addition, it may be also unsuccessful for a signal in a channel c(1), because jamming signal does not „hit“ channel c(1) in a time of message duration. it is important to emphasize that jamming is certainly successful for the second method of sweep signal generation if a bit changed condition comparing to eq. (2) is satisfied: 2 .sw messt t  (11) successful jamming probability for the second method of jamming signal generation is determined starting from formula (11) and is: analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 219 1 . 2 2 mess dist sw t p k t     (12) figure 5 presents variation of rcied activation signal jamming probability as the function of the relation tsw/tmess for two presented methods of sweep signal generation. the graph in this figure illustrates that successful jamming probability is always greater if sweep signal is generated according to the first method for all values tsw/tmess>0.5. for tsw/tmess≤0.5 both methods have pdist=1. fig. 5 successful jamming probability as a function of relation tsw/tmess for two methods of sweep signal generation. 5. the role of starting and ending jamming frequency selection the analysis from previous sections and graphs in figure 2 and figure 5 demonstrate that successful jamming probability decreases very fast when tsw is greater than tmess, i.e. when activation message is short. there is a limit of sweep speed increase due to the characteristics of used hardware components for signal generation. also too great sweep speed decreases the time of jamming signal frequency existence enough close to activation message frequency and thus message content is not changed to cause successful jamming. these problems may be overcome if sweep cycle does not cover the whole predicted frequency band in the jammer, but the smaller range of frequencies, that is estimated to contain the activation message frequency. in such a case tsw is no more significantly greater than tmess. it is necessary to know in advance the nearer frequency limits of expected activation signal, thus allowing possibility to define smaller distance between the lowest and the highest sweep frequency. it is demonstrated in [23] that the implemented operating frequencies for rcied activation are specific for different war areas. these frequencies depend on devices, which may be easily purchased in that area and then simply adjusted for the application. thus it is possible to predict a priori the expected activation frequencies. in any case, it is necessary to satisfy the condition ,down mess upf f f  (13) to realize jamming successfully. in this expression fmess is the frequency used for activation message transmission and fdown and fup are the minimum and maximum sweep frequency, respectively. 220 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl figures 6, 7 and 8 present pdist as a function of fdown and fup. frequencies fdown and fup are presented as shifted values. the value 0 on these figures corresponds to minimum possible sweep frequency (fminsw), which may be implemented in the jammer when sweep signal is realized, while the value 1 corresponds to maximum sweep frequency (fmaxsw). the value of activation signal frequency is also shifted. the correct relation of the frequencies for the graphs in figures 6, 7 and 8 is fdown≤fup. that’s why pdist=0 if this condition is not satisfied. 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 0 0.2 0.4 0.6 0.8 1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 fup fdown pdist 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 6 successful jamming probability as a function of minimum (fdown) and maximum (fup) shifted sweep frequency, tmess/tsw=0.2, shifted fmess=0.3. 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 0 0.2 0.4 0.6 0.8 1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 fup fdown pdist 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 7 successful jamming probability as a function of minimum (fdown) and maximum (fup) shifted sweep frequency, tmess/tsw=0.2, shifted fmess=0.6. analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 221 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 0 0.2 0.4 0.6 0.8 1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 fup fdown pdist 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 8 successful jamming probability as a function of minimum (fdown) and maximum (fup) shifted sweep frequency, tmess/tsw=0.5, shifted fmess=0.6. figures 6 and 7 are plotted for the case when the complete sweep cycle from the minimum to the maximum frequency has the duration five times greater than the activation message (tmess/tsw=0.2), while figure 8 is plotted for tmess/tsw=0.5. figure 6 corresponds to the shifted value of activation signal frequency 0.3 (i.e., the real value of this frequency is fminsw+(fmaxswfminsw)∙0.3), while the value of shifted frequency for the figures 7 and 8 is 0.6. the main conclusion from the graphs in figures 6, 7 and 8 is that pdist may reach the value equal to 1, which is not possible if the whole range of frequencies is swept. but, it is also possible that activation frequency is never in the range of jammed frequencies, when it is pdist=0. that’s why the good estimation of the frequency range used for activation signal transmission is very important. the second possibility to increase probability of successful jamming is simultaneous implementation of sweep signal generation in several frequency bands (the whole available frequency range is swept in each such formed frequency band). in this way, multisweep signal generation is implemented at the same speed in m bands in the same time. that’s why pdist is also increased m times until the value pdist=1 is reached. in the solution presented in [13], the value of m is 7. 6. the influence of rcied activation message characteristics on successful jamming probability until now we supposed in the analysis that jamming signal characteristics guarantee successful jamming if a signal appears in a channel where rcied activation message is transmitted. however, it is possible that this condition is not satisfied (first of all, because of a low jamming signal level, as already expressed in section 3). even in the case that jamming signal level is satisfactory (i.e. greater than the level of rcied activation 222 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl message), it is possible that ber<1. it means that each bit in activation message will be changed in relation to its exact value with probability equal to ber. the total number of bits forming an activation message is n. it is supposed that error correction coding is not applied which means that activation message will be successfully transmitted, if all bits in its content are correctly transmitted. probability of message successful transmission is therefore: (1 ) ,n sap ber  (14) and successful jamming probability will be: 1 1 (1 ) .n dist sap p ber     (15) figure 9 presents probability of successful rcied activation jamming (pdist) as the function of the number of bits n, which form a message and ber. this graph is obtained on the base of eq. (15). the importance of this graph is that it presents the dependence of pdist on two independent variables. we shall suppose that satisfactory combinations of n and ber give as a result pdist>0.95. in the case that activation message consists of only one byte (8 bits) the desired jamming probability is achieved for ber≈0.35. 1 3 5 7 12 20 28 36 44 52 60 1 0,7 0,4 0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 ber n pdist 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 9 successful jamming probability (pdist) as a function of message length (n) and bit error rate (ber). there is a great variety of transmission techniques, which may be used for rcied activation message sending. it is possible to use an algorithm, which corrects certain number of incorrectly transmitted message bits. in this paper we consider algorithms, which correct one or two message bits. in the case of a code able to correct one message bit, a message will be successfully transmitted if no more than one bit is faulty. when there are no faulty bits, message successful transmission probability may be determined according to (14). in the other possible case, when one bit is faulty, successful message transmission may be calculated from   1 1 (1 ) . 1 n sa np ber ber     (16) analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 223 successful jamming probability on the base of (14)–(16) is then:   1 1 1 1 (1 ) (1 ) . 1 dist sa sa n n p p p nber ber ber             (17) if we have a code with a possibility to correct two faulty message bits, a message will be correctly transmitted if there are not more than two faulty message bits. the successful transmission probability when two bits are faulty may be determined as   2 2 2 (1 ) , 2 n sa np ber ber     (18) i. e., total successful jamming probability in this case will be:     1 2 1 2 2 1 1 (1 ) (1 ) (1 ) . 1 2 dist sa sa sa n n n p p p p n nber ber ber ber ber                  (19) fig. 10 successful jamming probability in the case of error correction coding application to rcied activation message for ber=0.4. fig. 11 successful jamming probability in the case of error correction coding application to rcied activation message for ber=0.6. 224 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl the graphs in figures 10 and 11 present successful jamming probability as the function of the number of bits, which form activation message. these graphs are obtained using formulas (15), (17) and (19). the parameter in the figures is the number of bits, whose content may be corrected in the rcied receiver on the basis of implemented algorithm for error correction. the graphs in figure 10 and figure 11 are presented for ber=0.4 and ber=0.6, respectively. the aim is to achieve as greater as possible value of pdist and for practical considerations satisfactory jamming probability is supposed to be pdist=0.95, as already pointed out. this target value is achieved for ber=0.6 in the case of very robust error correction coding algorithm, which may correct two bit errors in a message even in the case of very short messages, whose length is only 8 bits. such short messages are not real to exist in practice. fig. 12 successful jamming probability in the case of error correction coding application to rcied activation message for n=16 bits. fig. 13 successful jamming probability in the case of error correction coding application to rcied activation message for n=32 bits. figures 12 and 13 present successful jamming probability as a function of ber in the case that activation message consists of only 16 bits (figure 12) or 32 bits (figure 13). analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 225 the results are also obtained on the base of expressions (15), (17) and (19). a satisfactory jamming probability pdist>0.95 is now reached for ber=0.35 if the message consists of 16 bits, or for ber=0.19 if the message consists of 32 bits when algorithm with two bits correction is applied. figures 14 and 15 present successful jamming probability as a function of n and ber for the case when one bit error in rcied activation message may be corrected (figure 14) and when two bit errors may be corrected (figure 15). graph in figure 14 is obtained using (17) and graph in figure 15 using (19). the results from these two figures make a complete with the graph in figure 9. 481216202428323640444852566064 0,1 0,4 0,7 1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 pdist n ber 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 14 successful jamming probability as the function of n and ber when it is possible to correct one bit error. 481216202428323640444852566064 0,1 0,4 0,7 1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 pdist n ber 0-0,1 0,1-0,2 0,2-0,3 0,3-0,4 0,4-0,5 0,5-0,6 0,6-0,7 0,7-0,8 0,8-0,9 0,9-1 pdist fig. 15 successful jamming probability as the function of n and ber when it is possible to correct two bit errors. 226 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl the results from [18] may be used to estimate the necessary jamming signal power relative to activation message level in order to achieve desired ber values. graphs in [18] are presented for often applied mpsk (m-ary phase shift keying) activation signal, where the values of m are 2 (bpsk – binary psk), 4 (qpsk – quaternary psk), 8 and 16. when the message consists of relatively small number of bits (16 in figure 12 or 32 in figure 13), it is expected that bpsk or qpsk is applied. it is very interesting to make additional comparison between the sweep speed when active jamming is implemented and the necessary signal detection time when reactive jamming is realized by fft analysis. the application of very fast, modern digital signal processors (dsp) presented in [24], [25] allows the achievement of very short detection times [10], which are even significantly smaller than the time necessary to realize one sweep cycle. it can be often found in literature that active jamming is more reliable than reactive jamming. we may point out as the conclusion that this statement is certainly valid only if wide-band noise jamming is used as a method of active jamming. when sweep signal is used for active jamming, it is possible to find the frequency of rcied activation signal by fft analysis and to start jamming signal generation in a shorter time than to complete one sweep cycle over all envisaged frequencies. the fft analysis rate depends on the applied dsp clock frequency, the number of activated dsp cores and the application of additional hardware accelerator in dsp. the clock for dsp core is obtained by pll components, which may generate very fast clock signals [26]. as there are even three factors, which may increase fft calculation speed, the analysis flow rate is several tens of times greater when these factors have maximum values than if they have minimum ones. the consequence is that for some combinations of considered factors, active sweep jamming is more reliable and for some others reactive jamming is better solution. the more detailed quantitative comparison of these two jamming scenarios, which may be realized by components presented in [17], [24] and [25] will be the subject of our future analysis. 7. conclusions there are two techniques applied to rcied activation jamming: active and reactive jamming. frequency sweep as the most widely used technique for active jamming is analyzed in this paper. in the introductory section it is explained why sweep jamming is important for application and what are its advantages and disadvantages. we emphasized the condition for certainly successful jamming and presented the method for jamming probability calculation in the case that jamming is not certainly successful. in the analysis two methods for sweep signal generation are compared considering successful jamming probability and all formulas are developed for both methods. the attention is devoted to practical sweep hardware implementation, where linearly variable sweep frequency is approximated by stepwise change of signal frequency. it is proved that the cause of unsuccessful jamming may be not only too slow signal frequency sweep comparing to the rcied message duration, but also excessively great frequency step change in stepwise jamming signal realization. the particular paper section is devoted to successful jamming probability determination when starting and ending sweep jamming frequencies are varied. at the end we presented the method for successful jamming probability calculation in general. we analyzed the influence of transmission ber, rcied activation message length and applied algorithm for error correction coding of activation messages on the calculated jamming probability value. analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 227 fig. 16 rcied jammer at defense & security international exhibition eurosatory 2018 in paris this paper is the enhanced version of the contribution [1]. comparing to [1], the new section 5 explains how changes of starting and ending sweep frequency influence the successful jamming probability. the conclusions from the new, finishing part of section 3 (eq. (9) and eq. (10)) are important for the jamming practical realization. it is proved in this part of the paper that jamming may be unsuccessful, although sweep speed satisfies the condition tmess>tsw. the results in section 6 are completed by new graphs in figure 12 and figure 13, which present successful jamming probability as the function of ber when activation message length is fixed. this is the other way to present the results from figure 10 and figure 11, where message duration was variable and ber was fixed. the graphs in figure 14 and figure 15 are also new in comparison to [1]. they present the value of successful jamming probability as a function of, together, number of bits forming a rcied activation message (n) and ber. when we compare these two graphs to the graph in figure 9, we can conclude how bit error correction algorithm in rcied activation message contributes to successful jamming probability decreasing. the importance of the additional, last paragraph in section 6 is that it emphasizes the fact that reactive jamming may be in some cases more reliable than active jamming, realized by sweep signal generation. having 228 m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić, a. lebl in mind our study of existing published papers, such statement is not proved in the available literature. we plan to proceed with more detailed quantitative analysis of this problem in our future developmental work. and, last but not least, in the section 1 we have added the main results from [18], which are related to quantitative comparison of necessary signal power in the case of sweep jamming and wide-band jamming for several modulation techniques. the results are presented without detailed mathematical proof, which is presented in [18]. the presented analysis is based on long standing iritel experience in the systems development for rcied activation jamming [13], [18], [27] and for jammers intended for other applications [11], [12], [16]. the analysis procedures and rcied jamming implementation are mainly related to [13]. the realized jammer was presented with the great success at the eurosatory 2018 – defense & security international exhibition in paris, figure 16. having in mind the applications of new technologies in our rcied jammer implementations, such as absorptive filter at power amplifiers outputs, new theoretical approaches and papers related to this topic are of interest like [28]. acknowledgement: the paper is realized in the framework of the project tr32051, which is cofinanced by ministry of education, science and technological development of the republic of serbia. references [1] m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić and a. lebl, “analysis of jamming successfulness against rcied activation“, in proceedings of the 5th international conference icetran 2018, palić, june 11-14, 2018. [2] s. d’oro, l. gallucio, g. morabito and s. palazzo, “efficiency analysis of jamming-based countermeasures against malicious timing channel in tactical communications”, in proceedings of the 2013 ieee international conference on communications icc, budapest, june 2013. [3] k. wilgucki, r. urban, g. baranowski, p. grądzki and p. skarźyński, “automated protection system against rcied, military communications and information technology”, chapter 7: “cognitive radio and spectrum management techniques”, 2012, pp. 593-601. [4] j. mietzner, p. nickel, a. meusling, p. loos, and g. bauch, “responsive communications jamming against radio-controlled improvised explosive devices”, ieee communications magazine, vol. 50, no. 10, pp. 38–46, october 2012. [5] l. karlsson, “method, system and apparatus for maximizing a jammer’s time-on-target and poweron-target”, united states patent application, publication no. us 2006/0164283 a1, 27. july 2006. [6] m. tanatwy, “responsive communication jamming detector with noise power fluctuation using cognitive radio”, international journal of innovative research in computer and communication engineering, vol. 2, no. 10, pp. 5967–5973, october 2014. [7] t. trump and i. müürsepp, “detection speed of responsive communication jamming detectors, recent advances in telecommunications and circuits”, in proceedings of the 2nd international conference on circuits, systems, communications, computers and applications, dubrovnik, june 2013, pp. 149-154. [8] m. wilhelm, i. martinović, j. schmitt, and v. lenders, “reactive jamming in wireless networks: how realistic is the threat?”, in proceedings of the 4th acm conference on wireless network security (wisec '11), acm, hamburg, june 2011, pp. 47-52. [9] g. evans, “a new weapon in the fight against rcieds”, army technology, august 2015, https://www.armytechnology.com/features/featurea-new-weapon-in-the-fight-against-rcieds-4647155/. [10] selena electronics, “rss intelligent reactive stationary jammer and rsv vehicle reactive jammer”, in “electronics warfare systems: jamming solution”, 2015. [11] iritel high frequency (hf) radio surveillance and jamming system, in the book m. streetly, jane’s radar and electronic warfare systems. ihs global limited, 2011. [12] iritel very/ultra high frequency (v/uhf) radio surveillance and jamming system, in the book m. streetly, jane’s radar and electronic warfare systems. ihs global limited, 2011. https://www.army-technology.com/features/featurea-new-weapon-in-the-fight-against-rcieds-4647155/ https://www.army-technology.com/features/featurea-new-weapon-in-the-fight-against-rcieds-4647155/ analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming 229 [13] m. mileusnić, p. petrović, b. pavić, v. marinković-nedelicki, j. glišović, a. lebl and i. marjanović, “the radio jammer against remote controlled improvised explosive devices”, in proceedings of the 25th telecommunications forum (telfor). belgrade, november 2017, pp. 151–154. [14] phantom technologies ltd., tsecnet s.r.l., sgs, “selective cellular jammer”, http://www.tsecnet.com/assets/ docs/tsecnet%20cellular_selective_jammer.pdf. [15] “gbppr 800mhz cellular phone jammer“, http://67.225.133.110/~gbpprorg/mil/celljam1/. [16] n. remenski, b. pavić, p. petrović, m. mileusnić, v. marinković-nedelicki, “integrisana radio-oprema za zaštitu prostora od mobilnih veza (treća generacija radio-opreme), tehniĉko rešenje – novi proizvod s oznakom cj-1p na projektu tehnološkog razvoja tr-11030 “razvoj i realizacija nove generacije softvera, hardvera i usluga na bazi softverskog radija za namenske aplikacije”, 2010., http://www.iritel. com/images/pdf/cj-1p-e.pdf, (also published in the book m. streetly, jane’s radar and electronic warfare systems. ihs global limited, 2011.). prva generacija radio-opreme s oznakom cj-1 je realizovana na projektu tehnološkog razvoja tr6149b, 2006. [17] analog devices, 1 gsps, 14-bit, 3.3v cmos direct digital synthesizer ad9910, data sheet, 2017, http://www.analog.com/media/en/technical-documentation/data-sheets/ad9910.pdf. [18] m. mileusnić, p. petrović, b. pavić, v. marinković-nedelicki, v. matić and a. lebl, “jamming of mpsk modulated messages for rcied activation”, paper accepted for 8th international scientific conference on defensive technologies oteh 2018, belgrade, 11-12th october 2018. [19] elbit systems ew and signit – elisra: mrj family – miniature reactive jammer family for eurosatory 2016 exhibition, http://elbitsystems.com/media/mrj.pdf. [20] elaman german security solutions, “jammer – principle of operation”, https://ht.transparencytoolkit.org/rcsdev%5cshare/documentation/gamma/elaman/elamancat/jammer/jammer%20principles%20of%20operati on.pdf. [21] m. strasser, c. pöpper, s. ĉapkun and m. ĉagalj, “jamming-resistant key establishment using uncoordinated frequency hopping”, ieee symposium on security and privacy. oakland, ca, usa, may 2008. [22] k. burda, “the performance of follower jammer with a wideband scanning receiver”, journal of electrical engineering, vol. 55, no. 1-2, pp. 36–38, 2004. [23] a. gulyás, “the radio controlled improvised explosive device (rcied) threat in afghanistan”, aarms, vol. 12, no. 1, pp. 1–11, 2013. [24] x. li and e. blinka, “very large fft for tms320c6678 processors”, texas instruments, 2015, pp. 1–6. [25] texas instruments, “multicore fixed and floating-point digital signal processor”, sprs691 – november 2010 – revised march 2014, pp. 1–242. [26] w. wang, x. chen, h. wong, “a system-on-chip 1.5ghz phase locked loop realized using 40nm cmos technology”, facta universitatis, series: electronics and energetics, vol. 31, no. 1, pp. 101– 113, march 2018. [27] p. petrović, n. remenski, p. jovanović, v. tadić, b. pavić, m. mileusnić, b. mišković, “wrj 2004 wideband radio jammer against rcieds“, tehniĉko rešenje – novi proizvod na projektu tehnološkog razvoja tr32051 pod nazivom “razvoj i realizacija naredne generacije sistema, ureċaja i softvera na bazi softverskog radija za radio i radarske mreže“, 2011., http://www.iritel.com/images/pdf/wrj2004-e.pdf. [28] s. c. dutty roy, “a new lumped element bridged-t absorptive band-stop filter”, facta universitatis, series: electronics and energetics, vol. 30, no. 2, pp. 179–185, june 2017. http://www.tsecnet.com/assets/docs/tsecnet%20cellular_selective_jammer.pdf http://www.tsecnet.com/assets/docs/tsecnet%20cellular_selective_jammer.pdf http://67.225.133.110/~gbpprorg/mil/celljam1/ http://www.iritel.com/images/pdf/cj-1p-e.pdf http://www.iritel.com/images/pdf/cj-1p-e.pdf http://www.analog.com/media/en/technical-documentation/data-sheets/ad9910.pdf http://elbitsystems.com/media/mrj.pdf https://ht.transparencytoolkit.org/rcs-dev%5cshare/documentation/gamma/elaman/elamancat/jammer/jammer%20principles%20of%20operation.pdf https://ht.transparencytoolkit.org/rcs-dev%5cshare/documentation/gamma/elaman/elamancat/jammer/jammer%20principles%20of%20operation.pdf https://ht.transparencytoolkit.org/rcs-dev%5cshare/documentation/gamma/elaman/elamancat/jammer/jammer%20principles%20of%20operation.pdf http://www.iritel.com/images/pdf/wrj2004-e.pdf instruction facta universitatis series: electronics and energetics vol. 27, no 2, june 2014, pp. 153 182 doi: 10.2298/fuee1402153s fiber optics engineering: physical design for reliability ephraim suhir bell laboratories, murray hill, nj, portland state university, portland, or, usa, technical university, vienna, austria, bordeaux university, bordeaux, france, ariel university, ariel, israel, ers co., los altos, ca, usa abstract. the review part of the paper addresses analytical modeling in fiber optics engineering. attributes and significance of predictive modeling are indicated and discussed. the review is based mostly on the author’s research conducted at bell laboratories, physical sciences and engineering research division, murray hill, nj, usa, during his tenure with bell labs for about twenty years, and, to a lesser extent, on his recent work in the field. the addressed topics include, but are not limited to, the following major fields: bare fibers; jacketed and dual-coated fibers; coated fibers experiencing thermal and/or mechanical loading; fibers soldered into ferrules or adhesively bonded into capillaries; roles of geometric and material non-linearity; dynamic response to shocks and vibrations; as well as possible applications of nanomaterials in new generations of coating and cladding systems. the extension part is concerned with a new, fruitful and challenging direction in optical engineeringprobabilistic design for reliability (pdfr) of opto-electronic and photonic systems, including fiber optics engineering. the rationale behind the pdfr concept is that the difference between a highly reliable optical fiber system and an insufficiently reliable one is “merely” in the level of the never-zero probability of failure. it is the author’s belief that when the operational reliability of an optical fiber system and product is imperative, the ability to predict, quantify, assure and, if possible and appropriate, even specify this reliability is highly desirable. key words: fiber optics engineering, optical fibers, design-for-reliability, predictive modeling, probabilistic assessments  received january 6, 2014 corresponding author: ephraim suhir ers co., los altos, ca, usa 727 alvina ct., los altos, ca 94024, 650-969-1530, cell. 408-410-0886 (e-mail: suhire@aol.com) 154 e. suhir 1. physical design-for-reliability in fiber optics engineering 1.1. fiber optics engineering (foe) three major objectives are pursued in fiber optics engineering (foe), as far as its short and long-term reliability is concerned: 1) failure-free functional (optical) performance; 2) high physical (structural, mechanical) reliability; and 3) satisfactory environmental durability. the physical design for reliability (dfr) effort deals primarily with the second objective, but, to an extent, also with the other two as well. the dfr effort employs methods and approaches of reliability physics and structural analysis and is aimed at evaluating stresses, strains and displacements in fiber optics structures, carry out physical design of these structures, and assess and assure their shortand long-term reliability. physical dfr effort treats fiber optics products as structures: the materials interaction, the size and configuration of the structural elements in the product, physical nature and magnitude of the applied loads, and the ability to quantify reliability are as important in this effort as the optical properties and characteristics of the employed materials. the application of methods and approaches of dfr in foe systems enables one to design, fabricate and operate a viable and reliable product [1]-[11]. like traditional and much better developed branches of dfr, such as civil, aircraft, space, maritime, automotive, etc., dfr in foe considers the specifics, associated with the properties of the materials used, typical structures employed, and the nature, magnitude and variability of the applied loads. typical foe structures are bare or composite (coated) rods and beams of various lengths and flexural rigidities. these structural elements could be soldered into ferrules, adhesively bonded into capillaries, or embedded into various materials and media. typical materials are silica glasses; polymers (coatings, adhesives, and even polymer light-guides); semiconductors, including compound semiconductors; metals, and, first of all, solders, both ―hard‖ (e.g., gold-tin) and ―soft‖ (e.g., silver-tin) ones. typical loads include internal (thermal) loads caused by dissimilar materials and/or by temperature gradients, and/or highor low-temperature environments (temperature extremes); external (mechanical) loads due to the inevitable or imposed, but always critical, deformations; or possible dynamic loads caused by shocks, vibrations, acoustic noise or impact, etc. high voltage, electric current, ionizing radiation and/or extensive light output from a powerful laser source are also considered as loads (stressors, stimuli). dfr in foe pursues, but might not be limited to, the following major objectives: 1) determine and idealize, for the sake of predictive modeling, the most likely loading conditions; 2) evaluate the stresses, strains, displacements, and, when methods and approaches of fracture mechanics are applicable, also fracture characteristics of the fiber optics materials and structures; 3) assure, typically on the probabilistic basis, that the acceptable strength and reliability criteria will remain, during the lifetime of the product, within the limits allowable from the standpoint of the product‘s structural integrity, elastic stability, dependability, availability and normal operation. while an optical engineer is and should be concerned, first of all, with the functional (optical) performance of the foe product, an adequate performance of this product cannot assured, if its ability to withstand elevated stresses (physical reliability) and exhibit adequate environmental durability (ability to withstand degradation and aging at high fiber optics engineering: physical design for reliability 155 temperature and/or humidity environments) is not taken care of. accordingly, we consider the following stress-strain analysis problems encountered in foe: 1) role and attributes of, and challenges in, predictive modeling in foe problems: the emphasis is on the analytical (mathematical) modeling; 2) thermal stress in fiber optics structures: it is this stress and strains (displacements) that are the most typical and most detrimental in these structures; 3) bending of bare fibers caused by the ends off-set; 4) bare fibers under the combined action of bending and tension; 5) role of the structural and materials nonlinearity; 6) coated fibers and stresses that occur in the glass material during the design, fabrication, operation and proof-testing of such fibers; 7) micro-bending of dual-coated fibers intended for long haul communication; 8) solder materials and joints, and fibers soldered into ferrules; 9) dynamic response of electronic and photonic systems, including optical fibers, to shocks and vibrations; 10) new nano-material and its applications in fiber optics, photonics and beyond; 11) some special foe problems: strain-free planar optical waveguides; apparatus and method for thermostatic compensation of temperature sensitive optical devices; stresses and strains in fused bi-conical taper couplers; ―curling‖ phenomenon during drawing of optical fibers; effect of voids. the extension part deals with a novel direction in ―high-tech‖ engineering -probabilistic design for reliability (pdfr) of electronic and photonic systems, including optical fibers and interconnects. the objective of this direction is to provide quantitative probabilistic assessments of the likelihood of operational failures of oe materials, devices and systems. the pdfr direction is based on the rationale that when reliability is imperative, the ability to predict, quantify, assure, and, if possible and appropriate, even specify it, is highly desirable, or even a must. 1.2. predictive modeling (pm) in fiber optics engineering (foe): role, attributes, challenges modeling is the major approach of any science, whether pure or applied. research and engineering models can be experimental or theoretical. experimental models are typically of the same physical nature as the actual phenomenon or the object. they reproduce a notion or an object of interest in a simplified way and often on a different scale. theoretical models represent real phenomena using abstract notions. the goal of a theoretical model is to reveal non-obvious, often even paradoxical, relationships hidden in the available intuitively obvious and/or experimentally proven input information [12]-[17]. a theoretical model can be either analytical or numerical (computational). analytical models often employ more or less sophisticated mathematical methods of analysis. the today‘s numerical models are computeraided. the most widespread model in the stress-strain evaluations and physical design for reliability in foe is finite-element analysis (fea). experimental and theoretical models have their merits and drawbacks, their areas of application, and should be viewed as equally important and equally indispensable for the design of a viable, reliable, and cost-effective foe product. one should always try to avoid to be blamed that because his/her only tool is a hammer, all the problems look like nails to him/her. although the role of theoretical modeling, mostly computer-simulations 156 e. suhir based, has dramatically increased in foe during the last two decades, the situation is still essentially different from the traditional areas of applied science. the majority of studies dealing with the physical design and performance of foe materials and products are experimental, and there are several reasons for that. first, experiments could be carried out with ―full autonomy‖, i.e. without necessarily requiring theoretical support. unlike theory, testing can be, and is, in effect, used for final proof of the viability and reliability of a foe product. that is why testing procedures are essential requirements of military and commercial specifications for such products. second, experiments in the foe field, expensive as they are, are considerably less costly than, e.g., hulls in naval architecture, or fuselages in the aerospace field, or objects in civil engineering, where "specimens" might cost millions of dollars. third, foe experimentations are much easier to design, organize, and conduct than in the macro-engineering world. fourth, materials whose properties are unknown are often and successfully employed in various foe applications. lack of information about the properties of such materials is often viewed as an obstacle for implementing theoretical modeling. finally, many of the leading specialists in foe (experimental physicists, materials scientists, chemists, chemical engineers) traditionally use experimental methods as their major research tool. some of them simply do not feel that adding theoretical modeling will make an appreciable difference in the state-of-the-art of what they do. it is not surprising that eleven out of twelve bell labs nobel laureates were experimentalists. on the other hand, the application of experimental modeling, unlike theoretical modeling, requires, as a rule, considerable time and is often associated with significant expense. what is even more important though is that experimental data inevitably reflect the effect of the combined action of a variety of factors affecting the phenomenon or the product of interest. this makes experimentation often insufficient to understand the behavior and the performance of an foe material or a device. such a lack of insight inevitably leads to tedious, time-consuming and costly experimental procedures. as a rule, the experimental data cannot be simply extended to new situations or new designs that are appreciably different from those tested. it is always easy to recognize purely empirical relationships obtained by formal processing of experimental data and not based on rational theoretical considerations reflecting the physical nature of the phenomenon of interest. purely experimental relationships contain, as a rule, fractional exponents and coefficients, odd units, etc. although such relationships may have a certain practical value, the very fact of their existence should be attributed to the lack of knowledge in the given area of applied science. typical examples are a power law (e.g., the one used in proof-testing of optical fibers, when their delayed fracture, aka as ―static fatigue‖, is evaluated) or an inverse power law (e.g., numerous relationships of coffin-manson type used to evaluate the lifetime of solder joint interconnections). in view of the above, here is what could be gained by using theoretical modeling: 1) unlike experimentation, predictive modeling is able to shed light on the role of each particular parameter that affects the behavior and performance of the material, structure or a system of interest; 2) although testing can reveal insufficiently robust elements, it is incapable to detect superfluously reliable ones; ―over-engineered‖ (superfluously robust) objects may have excessive weight and be more costly than necessary; in mass production of expensive products, superfluous reliability may entail substantial and unnecessary additional costs; fiber optics engineering: physical design for reliability 157 predictive modeling might be able to reveal the ―over-engineered‖ and, hence, costineffective elements of a foe design; 3) theoretical modeling can often predict the result of an experiment in less time and at a lower expense than it would take to perform the actual experiment; 4) in many cases, theory serves to discourage wasting time on useless experiments; numerous attempts to build impossible heat engines have been prevented by a study of the theoretical laws of thermodynamics; while this is, of course, a classical and an outstanding example of the triumph of a theory, there are also numerous, though less famous, examples, when plenty of time and expense were saved because of prior theoretical modeling of a problem of interest; 5) in the majority of research and engineering projects, a preliminary theoretical analysis enables one to obtain valuable information about a phenomenon or an object to be investigated, and gives an experimentalist an opportunity to decide, what and how should be tested or measured, and in what direction success might be expected. 6) by shedding light on ―what affects what‖, theoretical modeling often serves to suggest new experiments: theoretical analyses of thermal stresses in bi-material assemblies (e. suhir, asme j. appl. mech., vol. 53, no. 3, sept. 1986) and in semiconductor thin films (s. luryi and e. suhir, applied physics letters, vol. 49, no. 3, july 1986) triggered numerous experimental investigations aimed at the rational physical design of semiconductor crystal grown assemblies; 7) theory can be used to interpret empirical results and to bridge the gap between different experiments and can be used to extend the existing experience on new materials and products; 8) one cannot do without a good theory when developing rational (optimal) designs; the idea of optimization of structures, materials, functions and costs, although new in foe, has penetrated many areas of modern engineering; no progress in this direction could be achieved, of course, without application of theoretical methods of optimization. 1.3. analytical vs. numerical modeling analytical modeling [18]-[23] occupies a special place in the predictive modeling effort: it is able not only to come up with relationships that clearly indicate ―what affects what‖, but, more importantly, can often explain the physics of phenomena and especially paradoxical situations better than the fea modeling, or even experiments, can. although the basics of fea modeling were known since mid-thirties or so, it is since mid-1950s, when high-speed and powerful computers have become available, fea modeling has become the major research tool for theoretical evaluations in many areas of engineering. since mid-1970s, fea has become the major modeling tool in electronics and photonics as well. this can be attributed, first of all, to the developments of computer science and engineering and the availability of numerous powerful and flexible computer programs. these programs enable one to obtain, within a reasonable time, a solution to almost any stress-strain related problem. broad application of computers, however, has, by no means, made analytical solutions unnecessary or even less important, whether exact, approximate, or asymptotic. simple and easy-to-use analytical relationships have invaluable advantages, because of the clarity and compactness of the obtained information and explicit indication of the role of various factors affecting the given phenomenon or the behavior of the given material or the device. these advantages are especially significant when the parameter under investigation 158 e. suhir depends on more than one variable. as to the asymptotic techniques, they can be successful in many cases, when there are difficulties in the application of computational methods, e.g., in various problems containing singularities. such problems are often encountered in foe, because of wide employment of assemblies comprised of dissimilar materials. but, even when application of fea encounters no difficulties, it is always advisable to investigate the problem analytically before carrying out fea analyses. such a preliminary investigation helps to reduce computer time and expense, develop the most feasible and effective preprocessing model and, in many cases, avoid fundamental errors. let us indicated several attributes of the analytical modeling effort in comparison with the fea: 1) fea has been originally developed for structures with complicated geometry and/or with complicated boundary conditions (such as, e.g., avionics structures), when it might be difficult to apply analytical approaches. as a consequence, fea has been especially widely used in those areas of engineering, in which structures of complex configuration are typical (aerospace, maritime and offshore structures, some civil engineering structures, etc.). in contrast, foe structures are usually characterized by relatively simple geometries and can be easily idealized as cylindrical beams, flexible rods, rectangular or circular plates, various composite structures of relatively simple geometry, etc. there is an obvious incentive therefore for a broad application of analytical modeling in foe. 2) the adjacent structural elements in foe often have dimensions (thicknesses) that differ by orders of magnitude. typical examples are dual-coated fibers, thin-film systems fabricated on thick substrates, and adhesively bonded assemblies, in which the bonding layer (or the primary coating) is, as a rule, significantly thinner than the bonded components (secondary coating). since the mesh elements in a fea model must be compatible, fea of such structures often becomes a problem of itself, especially in regions of high stress concentration. such a situation does not occur, however, when an analytical approach is used. 3) there is often an illusion of simplicity in applying fea procedures. some users of fea programs believe that they are not even supposed to have any prior knowledge of structural analysis and materials physics, and that the ‖black box" they deal with will automatically provide the right answer, as long as they push the right keys on the computer. at times, a hasty, thoughtless, and incompetent application of computers can result in more harm than good by creating an impression that a solution has been obtained when, actually, this "solution" is simply wrong. it is well known to those with hands-in experience with fea that although it might be easy to obtain a fea solution, it might be quite difficult to obtain the right solution. and how would one know that he/she obtained the right solution, if there is nothing to compare it with? in effect, one has to have good background in reliability and materials physics to develop an adequate, feasible, and economic preprocessing model and to correctly interpret the obtained information, and preliminary analytical modeling can be of significant help in that. clearly, if the fea data are in good agreement with the results of an analytical modeling (which is usually based on quite different assumptions), then there is a reason to believe that the obtained solution is accurate enough. a crucial requirement for an effective analytical model is its simplicity and clear physical meaning. a good analytical model, which can be of real help in ―high-tech‖ engineering, should produce simple, easy-to-use and physically meaningful relationships that clearly indicate the role of the major factors affecting a phenomenon or an object of interest. one authority in applied physics remarked, perhaps only partly in jest, that the degree of fiber optics engineering: physical design for reliability 159 understanding of a phenomenon is inversely proportional to the number of variables used for its description. although an experimental approach, unsupported by theory, is "blind," theory, not validated by an experiment, is "dead." it is the experiment that forms a basis for a theoretical model, provides the input data for theoretical modeling, and determines the viability, accuracy, and limits of application of a theoretical model. limitations of a theoretical model are different in different problems and, in the majority of cases, are not known beforehand. it is the experimental modeling therefore, which is the ―supreme and ultimate judge‖ of a theoretical model. a physical experiment can often be rationally included into a theoretical solution to an applied problem. even when some relationships and structural characteristics lend themselves, in principle, to theoretical evaluation, it is sometimes simpler and more accurate to determine these relationships empirically. a good example is the spring constant of an elastic foundation provided by the primary coating in dual coated optical fibers. 1.4. bending of bare fibers bending of bare fibers, idealized as a single span beams clamped at the ends and subjected to lateral and/or angular misalignment(s) was examined, based on the engineering beam theory, in application to the stress-strain evaluations in optical fiber interconnects [24]-[34]. angular misalignments and lateral ends-offsets might be due to the inability of the given technology to ensure good alignment of the interconnect ends and/or end cross-sections, but might be also essential, and quite often even desirable, features of a particular design. elevated optical fiber curvatures, caused by misalignments, affect both functional (optical) performance and mechanical (structural) reliability of the fiber interconnects. these curvatures and the resulting bending stresses can be predicted and, if necessary, minimized for lower curvatures, thereby minimizing also the added transmission losses in, and structural reliability of, an interconnect. sometime it might be particularly easy and effective to minimize the maximum curvatures by simply rotating the end cross-section of the interconnect. the directions and the angles of rotation could be predicted depending on the measured lateral misalignments [24], [25], [31]-[34]. an important factor in the assessment of the level of the reactive axial tensile forces in an interconnect experiencing ends off-set is the magnitude of the off-set for its given interconnect length (span). reactive forces arise because the supports of the actual interconnect cannot move closer when the interconnect is subjected to the end‘s off-set. in such a situation the interconnect experiences, in addition to bending, also reactive tension. this tension might be neglected nevertheless, if the misalignment is small compared to the interconnect length [26]. how small is ―small‖ could be determined based on a more general, but still simple, predictive model that takes into consideration the possible occurrence of the appreciable tensile reactive forces [27]. if the reactive stresses are not negligible and have to be accounted for, this still could be done on the basis of the linear theory of bending of beams [27], although the level of the tensile forces is not proportional anymore to the level of the ends-offset. the situation is different if the interconnect experiences significant ends offset [28]. if this is the case, the nonlinear euler‘s ―elastic‖ theory can be employed to accurately predict the configuration of the misaligned fiber and the level of the tensile forces for the given (measured) ends off-set. for very large end off-sets the nonlinear stress-strain behavior of the silica material has to be accounted for (see section 1.6 below). 160 e. suhir the effect of the ends-offset, as far as the bending and the reactive tensile stresses are concerned, depends on the flexural rigidity of the interconnect. it is different therefore for bare and coated fibers. the models suggested in refs. [24], [25]-[34] can be employed also for coated interconnects, by just evaluating and using their increased flexural rigidity and then considering the distribution of the induced tensile force between the silica fiber and its coating. partially coated interconnects provide a particular challenge [26], as far as the ability to determine the induced stresses is concerned. if the highest stresses are expected to occur at the clamped ends of the interconnect, it might make a difference whether the interconnect is soldered or adhesively bonded into the support structures, and whether its coating becomes part of these structures: the lateral and/or the axial compliance of the clamped fiber at its support cross-sections might provide appreciable stress relief for the misaligned fiber and should be considered. in a conservative analysis, one could get away, however, assuming ideally rigid supports. such an assumption will result in an overestimation of the actual stresses in bending and/or in (reactive) tension. it is noteworthy that the occurrence of the tensile stress in an optical fiber of finite length subjected to a deliberately applied lateral off-set of its ends can be used in a unique and effective test vehicle for the evaluation of the tensile strength of the fiber, including its ―static fatigue‖ (delayed fracture) [29]. indeed, the developed models for the prediction of the tensile force in a fiber subjected to the given (imposed) ends offset enable one to develop a simple and an effective experimental setup. in fibers with significant ends off-set the bending stress is significantly lower than the tensile one, and could be neglected, especially if the ends of the fiber are allowed to rotate. such a setup mimics well therefore the pull-test conditions. while tensile loading on an optical fiber interconnect has always a negative effect on the state of stress in it, i.e., always leads to elevated stresses, especially in the presence of the ends off-set, moderate compression can have, strange as it may sound, a positive effect on the induced stresses [30], [31]. even if the compressive force exceeds the critical (buckling) force, it can still be tolerated, as long as the distance between the interconnect ends is controlled and cannot be smaller than the distance determined by the thermal contraction mismatch of the supports (and this distance is determined by the thermal contraction mismatch between the optical fiber and its enclosure). the desired compression can be evaluated beforehand and then implemented into the actual design by choosing the most suitable material of the enclosure: when the structure is fabricated at an elevated temperature and is subsequently cooled down to a low (room) temperature, the thermal contraction mismatch between the materials of the fiber and the enclosure will lead to the desired (required) level of the compressive stress and the displacement in the fiber. 1.5. pigtail configuration pigtails in laser package designs provide particular challenge, as far as their bending and optimized configuration is concerned. various situations encountered when a pigtail is employed to connect a laser package to the ―outside world‖ were addressed and analyzed [35]-[38]. it has been shown particularly [35] that by rotating the package inside the enclosure, one could reduce dramatically the induced curvatures. this should be done, however, with caution, since ideally straight pigtails cannot be recommended. this is because while the initial bending stress in them is indeed zero, the situation could be worsened dramatically if the structure with a high expansion enclosure is heated up, thereby leading to undesirable and significant tensile stresses in the pigtail. it is usually fiber optics engineering: physical design for reliability 161 preferred that the pigtail is kept ―loose‖ and, owing to that, is able to accommodate appreciable axial deformations in tension or compression without being stressed. if a pigtail experiences two-dimensional bending on a plane [38], appreciable bending stress relief can be obtained by simply forcing the pigtail to be configured as a quarter of a circumference, so that all its points have the same curvature and, hence, experience the same bending stress. this stress can be appreciably lower than the maximum bending stress at the clamped end of a clamped-free pigtail. more practical and more complicated situations take place when a pigtail is bent on a cylindrical surface [36], [37]. such a design was considered for lasers intended for at&t undersea long haul communication technologies. achieving an optimized geometry of such a pigtail was certainly a challenge. 1.6. consideration of structural and material nonlinearity consideration of the structural (geometric) and materials (physical) nonlinearity might be necessary, if the fiber experiences significant bending and/or axial deformations [39]-[48]. the effect of the structural nonlinearity, which is due to the significant bending deformations of optical fibers, takes place when the induced displacements are not proportional anymore to the applied forces. the stress-strain relationship might be still linear, however, i.e., hooke‘s law is still fulfilled. this is the case, e.g., of fiber interconnects with moderate end-offsets. it has been established, however [39]-[43], that silica glasses exhibit highly non-linear, although still elastic, stress-strain relationships when the applied strains are not low enough. young‘s modulus in these materials becomes strain dependent. experiments have indicated that it increases with an increase in the tensile stress and decreases with an increase in the compressive stress, even well below the stress that leads to buckling. when a silica fiber specimen is subjected to significant bending deformations, its neutral axis shifts at the given cross-section of the specimen, because of the non-linear stress-strain behavior of the material, in the direction of the layer subjected to tension. this phenomenon takes place, particularly, when the specimen is subjected to two-point bending tests [39]-[47]. both the geometric nonlinearity caused by large bending deformations (the shape of the bent fiber) and material‘s nonlinearity have to be considered, so that the maximum bending stress in the bent fiber is predicted in the most accurate fashion. if there is a need to establish the actual shape of the bent fiber, the euler ―elastica‖ approach might be necessary, and this shape is expressed in elliptic functions. attributes associated with the role of fiber coating, if any, can be easily incorporated, if necessary, into the analytical stress model [48]. 1.7. thermal stress in coated fibers coated fibers, whether polymer coated or metalized or otherwise protected, are widely employed for better shortand long-term reliability of the silica material, which is both brittle and moisture-sensitive. the addressed problems encountered during design, manufacturing, testing, and reliability assessments for coated fibers include: evaluation of the effect of coating on the bending stresses; understanding the possible delamination modes and mechanisms; improving strippability of coated fibers; prediction of the magnitude and distribution of stresses occurring during proof (pull-out) testing, and others. thermal loading is responsible for many failures in photonics engineering, including optical fiber systems [49]-[61]. such loading could be caused by the thermal expansion 162 e. suhir (contraction) mismatch of the dissimilar materials in the structure (and particularly of the fiber and its coating) and/or by the non-uniform distribution of temperature (temperature gradients) in the system. steady-state or variable thermal loading takes place during the normal operation of optical assemblies and systems, as well as during their fabrication, testing, transportation and storage. thermal stresses, strains and displacements are the major contributor to the functional, structural and environmental failures of the optical equipment. this is true even for optical fiber systems, although optical fibers, unlike copper wires, do not dissipate heat. creep and stress relaxation phenomena might lead to excessive and undesirable displacements in foe systems. complete loss in optical coupling efficiency can occur, because of the excessive displacements due to the lateral (often less than 0.2 micrometers) or angular (often less than a split of one percent of a degree) misalignment in the gap between two light-guides or between a light source and a light-guide. this could be caused particularly by the thermal stress related deformations and/or, e.g., by stress relaxation in the laser weld. as is known, tiny temperature-induced changes in the distances between bragg gratings written on an optical fiber can be detrimental to its functional performance. for this reason thermal control of the ambient temperature is sometime needed to ensure sufficient protection provided to an optical device sensitive to the change in temperature. the requirements for the structural (physical) behavior of the materials and structures in optoelectronics and photonics are often based therefore on the functional (optical) requirements and specifications, while the requirements for the structural reliability or for the environmental durability might be significantly less stringent. the importance of addressing thermal stresses in, and particularly of modeling of the physical behavior and performance of, coated optical fibers was addressed in refs. 49-61, where a number of practically important fiber optics structures were considered and analyzed. a simple analytical stress model has been recently developed for the prediction of thermal stresses in a cylindrical tri-material body [60], with application to silicon photonics technologies, when a metalized optical fiber is soldered into a silicon chip. the developed model is applicable also to situations when a fiber is soldered into a ferrule, or is adhesively bonded into a capillary. it is concluded particularly that the adequate bonding material (e.g., a ―soft‖ tin-lead or a ―hard‖ gold-tin solder) should be selected and its thickness should be established, for low enough thermally induced stresses in it, based on the developed model, so that the shortand long-term reliability of the materials, and, first of all, the solder material, is not compromised. being analytical, rather than fea based, this model is quite general and can be used in various other technologies and structures, even well beyond the field of photonics, when cylindrical tri-material bodies comprised of dissimilar materials and experiencing temperature excursions are employed. in bi-material soldered or adhesively bonded assemblies, the bonding layer is much thinner than the bonded components and/or its young‘s modulus is considerably lower than young‘s moduli of the materials of the bonded components. owing to that the cte of the bonding material does not have to be accounted for, and the engineering predictive model can be developed for a bi-material assembly and made therefore relatively simple. however, when the intermediate (bonding) material is not thin and/or its young‘s modulus is not small, the material becomes ―an equal partner‖ with the materials of the bonded components. then a more complicated model has to be developed to account for the roles of all the materials in such a tri-material assembly. the development of such a model is particularly challenging for a cylindrical body, such as a silicon photonics assembly [60]. fiber optics engineering: physical design for reliability 163 1.8. coated fibers with low modulus coating at the ends interfacial thermally induced shearing and peeling stresses that are due to the interaction of the dissimilar materials in coated fibers are often the major cause of an insufficient shortand long-term reliability of the fibers. since both categories of the interfacial stresses concentrate at the fiber ends and decrease with an increase in the compliance of the coating system [62]-[64], there is an obvious incentive for employing low modulus coating materials at the ends of optical fiber interconnects. particularly, the maximum thermally induced interfacial shearing stresses at the ends of a jacketed fiber can be minimized, if the lengths of the end portions of the coating are established, for the given young‘s modulus of the coating material and the given thickness of the coating layer, in such a way that the shearing stress at the fiber ends becomes equal to the shearing stress at the boundary between the mid-portion and the peripheral portions of the bonding layer. the maximum shearing stress in such an inhomogeneously coated fiber takes place at two locations: at the fiber ends and at the boundaries between the mid-portion and the peripheral portions of the coated fiber. this stress could be significantly lower than in a fiber with a homogeneous coating. moreover, the maximum stresses in an inhomogeneously coated fiber will be even lower than in a fiber coated by a homogeneous layer whose young‘s modulus is the same as the young‘s modulus of the low modulus material at the peripheral portions of a fiber with an inhomogeneous coating. such a paradoxical situation [65] is due to the fact that stiff mid-portions of bonded joints bring down the relative longitudinal interfacial displacements of the bonded materials not only in the fiber mid-portion, where the interfacial thermal stresses are low anyway, but also at the fiber ends, where the maximum interfacial stresses occur. these stresses decrease with a decrease in the peripheral displacements. 1.9. micro-bending phenomenon in dual-coated fibers dual-coated optical fibers are fabricated at elevated temperatures and operated at low temperature conditions. it is imperative for coated fibers intended for long-haul communications remain stable at low temperatures, i.e., do not buckle (do not ―microbend‖) within the primary coating as a result of the thermal contraction mismatch of the high expansion (contraction) secondary coating and the low expansion (contraction) fiber. low-temperature micro-bending, while most likely harmless from the standpoint of the level of bending thermal stresses, can result in substantial added transmission losses [66][77]. the low-temperature micro-bending phenomenon is a good illustration of a situation, when it is the need for a failure-free functional (optical) performance, rather than the physical reliability, that determines the requirements for the adequate structural (physical) design of an optical fiber system. the simplest analytical models [67]-[74] suggest that the fiber prone to low temperature micro-bending is treated as an infinitely long beam lying on a continuous elastic foundation. this foundation is provided by the coating system, and, first of all, by the low-modulus primary coating. as long as such a beam-on-elastic-foundation predictive model is considered, particular attention should be paid to how the spring constant of the elastic foundation is determined. in the early publications preceding the pioneering vangheluwe‘s work [67] it was simply assumed that this constant was equal to the young‘s modulus of the primary coating materials. vangheluwe, using the plain strain theory-of-elasticity approximation, obtained, assuming ideally rigid secondary coating, a simple and physically meaningful formula for the spring constant. vangheluwe‘s formula indicates that the spring constant of interest 164 e. suhir depends on both the elastic constants of the primary coating material (young‘s modulus and poisson‘s ratio) and its thickness. vangheluwe‘s formula could result, however, in a considerable overestimation of the spring constant and, hence, in an overestimation of the critical (buckling) force, for some actual, not very stiff, secondary coating materials [69]. the more general formula [69] accounts for the finite rigidity of both the primary and the secondary coating. in the case of thick and not very high-modulus secondary coatings, the compliance of both coating layers should be considered. another significant finding, as far as the low-temperature micro-bending phenomenon is concerned, has to do with the role of the initial local curvatures [68]. while the initial curvatures do not change the magnitude of the critical force, they affect the pre-buckling behavior of the compressed fiber. when the compressive force increases, an initially straight fiber remains straight up to the very moment of buckling, while the localized curvatures in a fiber with such curvatures gradually increase with an increase in the compressive force. this could cause appreciable additional deflections of the glass fiber and, as the consequence of that, considerable added transmission losses even at moderately low temperatures, well below the buckling temperatures. it has been shown particularly that, from the standpoint of the pre-buckling behavior of a fiber, certain curvature lengths are less favorable than the others: a dual-coated fiber supported by an elastic foundation provided by the low-modulus coating behaves, with respect to the distributed localized initial curvatures, like a narrowband filter that enhances the curvatures, which are close to the post-buckling configuration of the fiber (regardless of whether buckling occurs or not), and suppresses all the other, ‗non-resonant‖, curvatures. the developed analytical models are simple, easy-to-use, and clearly indicate the role of various factors affecting the pre-buckling behavior of the fiber. the obtained solutions indicate what could possibly be done to bring down, if necessary, the induced curvatures and the resulting added transmission losses in the fiber. the numerical examples are carried out for silicone/nylon coated systems extensively studied experimentally by japanese engineers [66]. the theoretical predictions agree well with the experimental observations. it is noteworthy in this connection that it has been observed [76] that external (mechanical) periodic loading with a period of about 100nm can also cause appreciable micro-bending losses in dual-coated fibers, and therefore should be avoided in actual designs. this period is rather close to the predicted critical ―periods‖ of initial curvatures in the low-temperature micro-bending situation. 1.10. proof-testing of coated fibers the stress-strain related problems that arise during proof-testing of coated optical fibers were addressed, based on the analytical predictive modeling, in refs. 78-83. the considered problems include: the role of the lengths of test specimens in pull-testing [82]; the buffering effect of the coating on the acceptable length of the test specimens in pull (proof) [83] and in bending [80] tests; the magnitude and the distribution of the interfacial stresses during pull-out testing [81], as well as stresses in coated fibers stretched on a capstan during the manufacturing process [79]. in the brief discussion that follows we elaborate on some more or less important aspects of the physical phenomena associated with proof-testing of coated optical fibers. it is well-known in materials science that if one intends to experimentally determine the young‘s modulus of a material and/or its flexural strength through threeor four-point bending, the specimen should be long enough (say, its length should be at least 12-15 fiber optics engineering: physical design for reliability 165 times larger than its height), so that lateral shearing deformations do not occur in the specimen and do not affect the test data [78]. a problem encountered during pull testing of a glass fiber whose one end is soldered or adhesively bonded (and is therefore rigidly or elastically clamped), and its other end is subjected to a pulling (tensile) force [82], although is somewhat different, of course, but has also to do with the intent to obtain clear information about testing. this could be done if the specimen is long enough, so that the tensile stresses prevail considerably over the bending stresses. considering that the pulling force will always form a certain angle with the fiber axis, the question is what could be done to minimize the effect of the associated bending stresses? to answer this question, a simple analytical model has been developed for the evaluation of the bending stress caused by the misalignment of the ends of a glass fiber specimen soldered into a ferrule and subjected to tension during pull testing. it is shown that the bending stress can be reduced considerably by using sufficiently long specimens and how long such specimens should be, so that only the tensile stress could be accounted for. it is also shown how the uncertainty in the prediction of the inevitable misalignment of the fiber ends can be considered when establishing the appropriate specimen length. the tensile force experienced by a dual-coated optical fiber specimen during its reliability (proof) testing is applied to the fiber‘s secondary coating and is transmitted to the glass fiber at a certain distance from the specimen‘s ends. although it is true that, in accordance with the saint-venant‘s principle, the glass fiber will be subjected, at a certain distance from the specimen ends, to the same stress that it would experience if the external force were applied to both the fiber and the coating, it is also true that, because of the buffering effect of the coating, the effective length of the fiber under testing, when the testing force is applied to the coating only, might be reduced appreciably in comparison with the fiber‘s actual length. a simple analytical stress model for the evaluation of this effect was developed [83] and was used to establish the appropriate minimum length of a dual-coated test specimen, so that the experimental data would be consistent and physically meaningful. it has been found that it is the axial compliance of the secondary coating, which experiences the direct action of the external loading, and the interfacial compliance of the coating system that determine the buffering effect of this system. it was concluded that for any finite compliance of the coating, even a very low one, one could always employ a long enough specimen, in which the major mid-portion of the glass fiber would be loaded to practically the same level as in an infinitely long specimen, when the external force is distributed between the glass fiber and its coating proportionally to the axial rigidities of these structural elements. the developed model can be used for selecting the appropriate length of coated optical fiber specimens in reliability (proof) testing. it can be used also beyond the fiber optics technologies area, when composite structures of the type in question are employed and tested. 1.11. elastic stability of optical fiber interconnects analytical models for the evaluation of the elastic stability of optical fiber interconnects have been developed 1) to understand the role of the nonlinear stress-strain relationship [84], 2) to assess the role of the hydrostatic pressure, if any [85], 3) to evaluate the role of the ends off-set [86], 166 e. suhir 4) to find out of there is sufficient incentive for using thicker coatings for higher elastic stability [87], 5) to investigate the role of the finite length of the interconnect [88], [91] on the critical stress, including the situation, when the interconnect is partially stripped off of its coating [89], and 6) to analyze the effect of the lateral compliance of the interconnect on the level of the buckling forces [90]. in the brief discussion that follows we indicate some important physical aspects of some of the phenomena associated with the above efforts. the analysis of the effect of the nonlinear stress-strain relationship on elastic stability of optical glass fibers [84] has been carried out under an assumption that this relationship, obtained for the case of uniaxial tension, is also valid in the case of compression: just the sign in front of the nonlinear term in the formula for the strain-dependent young‘s modulus should be changed. it is clear that since the critical force is proportional, in accordance with the well-known euler formula, to the young‘s modulus of the material, and this modulus reduces with an increase in the compressive force, an approach that ignores such a reduction will overestimate the magnitude of the critical force, and, hence, will not be conservative. in the studies addressing low-temperature micro-bending of infinitely long dual-coated fibers and elastic stability of short bare fibers the role of the nonlinear stress-strain relationship has been evaluated for strains not exceeding 5%, and therefore it has been indicated that future experimental research should include evaluation of the nonlinear stress-strain relationship, both in tension and compression, for higher strains and for high-strength fibers, such as, e.g., fibers protected by metallic coatings. the author of this review is not aware of whether such research has been conducted. the analysis of the effect of the hydrostatic pressure in dual‐coated optical fibers on the induced stresses in the fiber [85] has indicated that all the normal stresses in the fiber (radial, tangential, axial) are proportional to this pressure. it has been found also that hydrostatic pressure results in lower micro-bending losses. calculations of the elastic stability of coated fiber specimens subjected to compression were carried out using analytical modeling [86], [87] for 2mm and 5mm long interconnects for the cases of bare (uncoated) fibers, as well as for coated fibers with 62.5 μm and 187.5 μm thick coatings. the compressive, bending and the total stresses in the glass fiber at the pre-buckling, buckling and post-buckling conditions were computed with consideration of the non-linear stress-strain relationship in the silica material. it has been found that the stresses in the fiber are strongly dependent on its length and the coating thickness. the nonlinear stress-strain relationship plays, however, a minor role, unless the specimen is shorter than only 2mm. the incentive for the evaluation of the effect of the length of a coated fiber, idealized as a beam lying on a continuous elastic foundation (provided by the coating system), on the critical stress in it [88], [90] is due to the fact that the critical (buckling) force for a beam, in the absence of an elastic foundation, is highly dependent on its length: in accordance with the euler formulas, this force is inversely proportional to the beam‘s length squared and is proportional to the beam‘s flexural rigidity. on the other hand, the critical force for a long enough beam lying on a continuous elastic foundation is beam‘s length independent and, as is known from the theory of such beams, is proportional to the doubled square root of the product of the spring constant of the foundation and the beam‘s flexural rigidity. the following natural questions arise in this connection: fiber optics engineering: physical design for reliability 167 1) for what lengths both the beam‘s length and the spring constant of the foundation play a role and should be accounted for? in other words, if the beam on an elastic foundation is not long enough, how does its finite length affect, if at all, the critical force? 2) what role, if any, the arrangements of the beam‘s supports at its ends play, as far as the critical force is concerned, and is this role dependent of the beam‘s length? in other words, is the above mentioned well known formula for the critical force for a long enough beam calculated as the doubled square root of the product of the spring constant of the elastic foundation and beam‘s flexural rigidity, valid for any long enough beam lying on an elastic foundation, regardless of the arrangements of its end supports, or it is not always the case? the developed analytical model enabled one to obtain answers to these questions and, as a by-product, to provide practical guidance for designers of coated fiber interconnects. an easy to use and physically meaningful diagram [90] based on the developed analytical models has been suggested to determine stability/instability zones for the given compressive force, the spring constant of the foundation, the length of the beam (fiber) and its flexural rigidity. both the mechanical and thermally induced compressive forces were considered. it has been shown also that the critical force for a long enough beam with a free (unsupported) end is half of the magnitude of the force in a beam with both ends supported. the obtained solution has been extended for a fiber with a stripped-off coating at its end portion, when the stripped off end of the fiber interconnect (connector) is subjected to compression [89]. a situation when the critical force for the coated portion of the fiber is equal to the critical force for its stripped off portion was particularly addressed and the recommendations for the corresponding length of the elastically stable stripped off portion have been suggested. the model developed for a cantilever beam lying on a continuous elastic foundation and subjected to the combined action of the concentrated compressive and lateral forces at the free end of the beam (coated fiber) [90] was used to explain the effect of the lateral compliance of such a beam (i.e., its propensity to deflect under the action of the given lateral force) on its elastic stability. it is clear that the flexural rigidity of the beam and the presence of a compressive or a tensile force are equally important when assessing the role of the lateral compliance. indeed, while the tensile axial force results in an increased effective flexural rigidity of the beam, the compressive force results in its lower flexural rigidity. in an extreme situation, when the compressive force is significant and becomes equal to its critical value, the beam buckles, i.e., its effective flexural rigidity becomes zero. in another extreme case, when the tensile force is large, the beam‘s effective flexural rigidity increases, and a significant lateral force is needed to bend the beam. these phenomena can be used in fiber optics to increase, if necessary, the elastic stability (the critical force) by applying a tensile force to the fiber. this could be done, e.g., by placing the fiber into an enclosure whose cte is even lower than that of the fiber, say, in an enclosure built of carbon nano-tubes (cnts). as is known, at low and room temperatures, the cte for single wall cnts in axial direction could be even negative. on the other hand, if one intends to increase the lateral compliance of the fiber, a high expansion enclosure could be used. such an enclosure will apply compression to the silica fiber. the modeling technique could be similar to the one used in [30] where a fiber with an initial ends off-set was considered. 1.12. solder materials and joints, and fibers soldered into ferrules solder materials and joints are as important in photonics and, particularly, in foe, as they are in microelectronics [92], [93]. there are, however, specific requirements for the 168 e. suhir solder materials and joints used in photonics. these requirements are associated with the ability to achieve high alignment, high yield stress, propensity to low creep, etc. it has been shown [92] that low expansion enclosures with good thermal expansion (contraction) match with silica is not always the right choice (solution) from the standpoint of the thermally induced stresses in metalized fibers soldered into ferrules, and in the solder material itself. indeed, the low expansion enclosures result in tensile radial stresses in the solder ring, and could lead to the delamination of the metallization from the fiber and/or to the excessive tensile radial deformations in the solder. on the other hand, high expansion (contraction) enclosures might result in high compressive stresses in the solder material, and in unfavorable low cycle fatigue conditions during temperature cycling of the joint. the most feasible material of the enclosure and/or the thickness of the solder ring, and/or the physical properties of the solder material could and should be found based on the developed model. 1.13. dynamics response of optoelectronic structures to shocks and vibrations numerous problems associated with the dynamic response of electronic and photonic structures to shocks and vibrations were addressed in refs. [94]-[106]. the major findings, conclusions and recommendations could be summarized as follows: 1) the maximum acceleration is typically used in electronics and photonics engineering as the major reliability criterion. it is suggested that this criterion can be indeed used in this capacity, when functional (electrical, optical, thermal) performance of the product is evaluated. it could be misleading, however, when structural (physical) reliability is critical [95]. it is the dynamic stress, and not the maximum accelerations (decelerations) that should be used as a suitable and an adequate criterion of the dynamic strength of the material or a device. this stress may or may not be proportional to the maximum acceleration. 2) drop tests are often replaced in electronics and photonics engineering by shock tests, which are simpler to design and conduct, and whose results is easier to interpret. it has been found that such a replacement can be justified, if the dynamic response of the device under test is as close to an instantaneous impact, as possible [97], [98], [103]; 3) electronic and opto-electronic systems are often tested ―on the board level‖. the model [99] contains is an exact solution to a highly nonlinear equation for the principal coordinate for the dynamic response of a board to an impact (shock) loading. the model can be used to evaluate the dynamic response characteristics of the board (with surface mounted devices on it) that experiences highly nonlinear vibrations as a result of the shock impact applied to the board‘s support contour in drop or shock tests. the model has been developed under an assumption that the size of the surface-mounted devices in the xy plane is small, so that the surface mounted devices do not change the flexural rigidity of the board, but contribute significantly to its mass and, hence, to the inertial forces. 4) electronic and photonic systems often experience periodic impacts that could be idealized and modeled as a train of instantaneous impulses [101]. the developed model enables one to evaluate the dynamic response of such systems to a train of periodic impacts, including the situation, when such shocks generate quasi-chaotic vibrations in the system. smoluchowski‘s (fokker-planck) equation is used to describe and to characterize the quasi-random vibrations caused in such a nonlinear system by periodic impulses. fiber optics engineering: physical design for reliability 169 1.14. new nano-particle material (npm) and its applications in fiber-optics an advanced technology for making nano-particle material (npm) based optical silica fiber coatings has been developed under grants from darpa/navy [107]-[116]. the developed technology enables one to create ultra-thin, highly cost-effective, highly mechanically reliable, and highly environmentally durable coatings for silica light-guides. the obtained results have demonstrated the performance superiority of the developed technology over polymer-coated and metallized fibers, as well as a potential that the npm has for various commercial and military applications in microand opto-electronics and related areas. it can have many attractive applications also well beyond the ―high-tech‖ field. this npm-based coating has all the merits of polymer and metal coatings, but is free of the majority of their shortcomings. the developed material is an unconventional inhomogeneous ―smart‖ composite material, which is equivalent to a homogeneous material with the following major properties: 1) low young‘s modulus, 2) immunity to corrosion, 3) good-to-excellent adhesion to adjacent material(s), 4) non-volatile, 5) stable properties at temperature extremes (from -220 0 c to +350 0 c), 6) very long (practically infinite) lifetime, 7) ―active‖ hydrophobicity — the material provides a moisture barrier (to both water and water vapor), and, if necessary, can even ―wick‖ moisture away from the contact surface; 8) ability for ―self-healing‖ and ―healing‖: the npm is able to restore its own dimensions, when damaged, and is able to fill existing or developed defects (cracks and other ―imperfections‖) in contacted surfaces; very low (near unity) effective refractive index (if needed). npm can be designed, depending on the application, to enhance those properties that are most important for the pursued application. the npm properties have been confirmed through testing. the tests have demonstrated the outstanding mechanical reliability, extraordinary environmental durability and, in particular applications, improved optical performance of the lightguide. it is always desirable to provide application-specific modifications of the npm to master/optimize its properties and performance. because it is a nano-material, its surface chemistry and its performance depend a lot upon the contact materials and surfaces. the following npm applications are viewed as the most attractive ones. 1) npm is able to hermetically seal packages, components and devices, such as laser packages, mems, displays and plastic leds; 2) npm can be used as an effective protective coating for various metal and non-metal surfaces, well beyond the area of microand opto-electronics: in cars, aerospace structures, offshore and ocean structures, marine vehicles, civil engineering structures (bridges, towers, etc.), tubes, pipes and pipe-lines, etc. these applications benefit because the material is actively hydrophobic, does not induce additional stresses (owing to its low modulus), is inexpensive, is easy-to-apply, has practically infinite lifetime, and is self-healing. application of this material can result in a significant resistance of a metal surface to corrosion, and, in addition, in substantial increase in the fracture toughness of the material, both initially and during the system‘s operation (use); 3) the npm can be added in the formulation of various coatings such as paints, thereby providing protective benefits without changing the application techniques; 170 e. suhir 4) because of a low refractive index, the npm can be used, if necessary, as an effective cladding of optical silica fibers. the use of the npm cladding eliminates the need to dope silica for obtaining light-guide cores. the new preform will consist of a single (undoped and, hence, less expensive) silica material; 5) a derivative application is flexible light-guides. multicore flexible fiber cables employing npm are able to provide high spatial image resolution. as such, they might find important applications, when there is a need to provide direct high-resolution image transmission from secluded areas. possible applications can be found in bio-medicine, nondestructive evaluations, oil and other geological explorations, in ocean engineering, or in other situations, when an image needs to be obtained and transmitted from relatively inaccessible locations. in such applications, the plane (―butt‖) end of the fiber bundle (cable) will play the role of a small size pixel array. the transmitted image can be concurrently or subsequently enlarged to a desirable size, as needed; 6) another derivative application is a multicore fiber cable. ultra-small diameter glass fibers with an npm-based cladding/coating can be placed in large quantities within a npm medium (―multiple cores in a single cladding‖). in addition, owing to a much better inner-outer refractive index ratio in the npm-based fibers, such cables will be characterized by very low signal attenuation; 7) yet another derivative application is sensor systems. the npm-based fibers can be used in optical sensor systems that employ optical fibers embedded in a laminar or a cast material. such systems are used, e.g., in composite airframes. with the npm used as a cladding or, at least, as a coating of the silica optical fiber, the optical performance and the structural reliability of the light-guide will be improved dramatically compared with the conventional systems; 8) ultra-thin planar light-guides are yet another derivative application of the npm. in the new generation of the planar light-guides, npm can be used as the top cladding material. it will replace silicon or polymer claddings, which are considered in today‘s planar light-guides. all the advantages of the npm cladding material discussed above for optical fibers are equally applicable to planar light-guides. these are thought to have a ―bright‖ future in the next generation of computers and other photonic devices. a modification of the npm has been developed and tested as an attractive substitute for the existing hermetic and non-hermetic optical fiber coatings. the following major activities were undertaken and the following results were obtained: 1) the drawing (manufacturing) process and the drawing tower were adequately retrofitted to adjust them to the characteristics of the developed npm and to the npm layer application procedure; 2) the conducted mechanical tests have demonstrated remarkable strength (up to 7.5gpa=765kgf/mm.sq.=1088kpsi) and attractive quality (low strength variability) of the manufactured npm-based fibers. such high strength characteristics have been never achieved before, even in the lab conditions; 3) the environmental tests have shown that even at the humidity level of 100% (samples were immersed into water for 24 hours) the mechanical strength of these fibers is on the order of the strength of the best quality fibers at the ―dry‖ conditions in the previous tests; 4) there is reason to believe that the achieved performance is still not a limit of the npm-based technology and that the higher fibers strengths and better environmental stability are feasible by further ―fine tuning‖ and further optimization of the npm and the drawing procedure; fiber optics engineering: physical design for reliability 171 5) the optical performance of the npm-based fibers (in terms of the attenuation level) is almost two-fold better than the optical performance of the reference (existing) samples. the estimated lower limit of the npm based optical fibers with silica glass core and stepwise refractive index change, can potentially get a record values for the tested type of multi-mode fibers (getting even below 1 db/km in a specific spectral ―window‖.). the obtained results clearly demonstrated the performance superiority of the developed technology and a great potential (scientific, technological and commercial) of the future products, which makes the project attractive for the commercialization. 1.15. some special foe problems 1. application of the mechanical approach to the evaluation of low-temperature added transmission losses in single-coated (jacketed) optical fibers [117] enables one, based on the developed analytical stress model, to evaluate the threshold of such losses from purely structural (mechanical) calculations, without resorting to optical evaluations or measurements. the model has been confirmed, however, by optical measurements. the model is based on the experimentally obtained evidence that the temperature threshold of the elevated added transmission losses coincides with the threshold of the elevated thermally induced (―hoop‖) stresses applied by the polymer jacket to the silica fiber. the suggested model enables one to predict the threshold of interest by stress calculations, instead of resorting to much more complicated optical calculations or measurements. the model sheds light on the physics of the losses in question. the model can be used also to assess the incentive for employing a dual coated system, in which the thermally induced pressure on the glass fiber will be reduced. 2. analytical models [118]-[120] were used to predict the thermal stresses in fused biconical taper (fbt) light-wave couplers. the stresses are caused by the thermal contraction mismatch of the high-expansion coupler and its low-expansion substrate. the challenge in the modeling is due to the non-prismaticity of the fbt structure and the non-linear stressstrain relationship of the fbt material. 3. elevated lateral gradients of the cte‘s and young‘s moduli (in direction of the fiber diameter) can be possibly responsible for the fiber ―curling‖ during drawing of optical silica fibers [121]. the analysis was carried out on the basis of both analytical and fea modeling, and an excellent agreement of the analytical modeling and fea data has been observed. 4. apparatus and method for thermostatic compensation of temperature change sensitive opto-electronic devices [122] was also based on analytical modeling. in accordance with the invention, temperature-sensitive devices are mounted within a thermostatic structure that provides temperature compensation by applying compressive or tensile forces to stabilize the performance of the device across a significant operating temperature range. in a preferred embodiment, an optical fiber refractive index grating is thermostatically compensated to minimize changes in the reflection wavelength of the grating. various methods and devices are known in the art to compensate for temperature induced thermal expansion. the patent [122] provides the simplest and most effective solution to the thermal compensation problem, when regular and readily available materials can be used to solve the problem. 172 e. suhir 2. probabalistic design for reliability in fiber optics engineering 2.1. qualification testing (qt) the short-term goal of a particular opto-electronic device manufacturer is to conduct and pass the established qt, without questioning if they are adequate. the ultimate longterm goal of opto-electronic industries, whether aerospace, military, or commercial, regardless of a particular manufacturer or a product, is to make their deliverables reliable in the actual operations. it is well known, however, that today‘s electronic devices that passed the existing qt often fail in the field (in operation conditions). are the existing opto-electrionic qt specifications adequate? do opto-electronic industries need new approaches to qualify their devices into products? could the existing qt specifications and practices be improved to an extent that if the device passed the qt, there is a quantifiable way to assure that its performance will be satisfactory? at the same time, there is a perception, perhaps, a substantiated one, that some electronic products ―never fail‖. it is likely that such a perception exists because these products are superfluously durable, are more robust than is needed for a particular application and, as the consequence of that, are more costly than necessary. to prove that it is indeed the case, one has to find a consistent way to quantify the level of the opto-electronic product robustness in the field. then one could establish if a possible and controlled reduction in the reliability level could be translated into a significant cost reduction. 2.2. probabilistic design for reliability (pdfr) the probabilistic design for reliability (pdfr) concept enables one to provide affirmative answers to the above questions. the concept suggest that one 1) conducts a highly focused and highly cost-effective failure-oriented accelerated testing (foat), 2) carries out simple and physically meaningful predictive modeling (pm) to understand the physics of failure; 3) predicts, using the results of the carried out foat and pm, the probability of failure (pof) in the field; 4) carries out sensitivity analyses (sa) to establish the acceptable pof; 5) revisits, reviews and revises the existing qt practices, procedures, and specifications; and 6) develops and widely implements the pdfr concept, methodologies and algorithms, considering that ―nobody and nothing is perfect‖, that the probability of failure is never zero, but could be predicted and, if necessary, minimized, controlled, specified and even maintained (assured) at an acceptable level. in effect, the only difference between a highly reliable and an insufficiently reliable product is ―merely‖ in the level of the operational pof. very popular today prognostication and health monitoring (phm) approaches and techniques could be very helpful at all the stages of the design, manufacturing and operation of the product. the reliability evaluations and assurances cannot be delayed, however, until the device is made (although it is often the case in many current practices). reliability should be ―conceived‖ at the early stages of the device design; implemented during manufacturing; qualified and evaluated by (electrical, optical, environmental and mechanical) testing at the design, product development and the manufacturing stages checked (screened) during production (by implementing an adequate burn-in process) and, if necessary and appropriate; fiber optics engineering: physical design for reliability 173 monitored and maintained in the field during the product‘s operation, especially at the early stages of the product‘s use by employing, e.g., technical diagnostics, prognostication and health monitoring (phm) methods and instrumentation. three classes of engineering products, including opto-electronic and particularly fiber optics products, should be distinguished from the reliability point of view: 1) class i includes some military or aerospace objects, such as warfare, military aircraft, battle-ships, space-craft. cost is important, but is not a dominating factor; 2) class ii includes objects like long-haul communication systems, civil engineering structures (bridges, tunnels, towers), passenger elevators, ocean-going vessels, offshore structures, commercial aircraft, railroad carriages, cars, some medical equipment. the product has to be made as reliable as possible, but only for a certain specified level of demand (stress, loading); 3) class iii includes consumer products, commercial electronics, agricultural equipment. the typical market is the consumer market. 2.3. reliability, cost effectiveness and time to market reliability, cost effectiveness and time-to-market considerations play an important role in the design, materials selection and manufacturing decisions in commercial electronics, and are the key issues in competing in the global market-place, at least for class iii products. a company cannot be successful, if its products are not cost effective, or do not have a worthwhile lifetime and service reliability to match the expectations of the customer. too low a reliability can lead to a total loss of business. product failures have an immediate, and often dramatic, effect on the profitability and even the very existence of a company. profits decrease as the failure rate increases. this is due not only to the increase in the cost of replacing or repairing parts, but, more importantly, to the losses due to the interruption in service, not to mention the losses due to reduced customer confidence and acceptance. these make obvious dents in the company‘s reputation and, as the consequence of that, affect its sales. each business, whether small or large, should try to optimize its overall approach to reliability. ―reliability costs money‖, and therefore a business must understand the cost of reliability, both ―direct‖ cost (the cost of its own operations), and the ―indirect‖ cost (the cost to its customers and their willingness to make future purchases and to pay more for more reliable products). 2.4. failure oriented accelerated testing (foat) it is impractical and uneconomical to wait for failures, when the mean-time-to-failure for a typical today‘s electronic device (equipment) is on the order of hundreds of thousands of hours. accelerated testing (at) enables one to gain greater control over the reliability of a product. at has become a powerful means in improving reliability [3], [4]. this is true regardless of whether (irreversible or reversible) failures will or will not actually occur during the foat (―testing to fail‖) or the qt (―testing to pass‖). in order to accelerate the material‘s (device‘s) degradation and/or failure, one has to deliberately ―distort‖ (―skew‖) one or more parameters (temperature, humidity, load, current, voltage, etc.) affecting the device functional or mechanical performance and/or its environmental durability. at uses elevated stress level and/or higher stress-cycle frequency as effective stimuli to precipitate failures over a short time frame. the ―stress‖ in re does not necessarily have to be mechanical or a thermo-mechanical: it could be electrical current or voltage, high (or low) temperature, high humidity, high 174 e. suhir frequency, high pressure or vacuum, cycling rate, or any other factor (stimulus) responsible for the reliability of the device or the equipment. at must be specifically designed for the product under test. the experimental design of at should consider the anticipated failure modes and mechanisms, typical use conditions, and the required or available test resources, approaches and techniques. some of the most common at conditions (stimuli) are: high temperature (steadystate) soaking/storage/ baking/aging/ dwell; low temperature storage; temperature (thermal) cycling; power cycling; power input and output; thermal shock; thermal gradients; fatigue (crack propagation) tests; mechanical shock; drop shock (tests); random vibration tests; sinusoidal vibration tests (with the given or variable frequency); creep/stress-relaxation tests; electrical current extremes; voltage extremes; high humidity; radiation (uv, cosmic, x-rays, alpha particles); space vacuum. 2.5. qualification testing (qt) and failure oriented accelerated testing (foat) qt is a must. industry cannot do without qt. its objective is to prove that the reliability of the product-under-test is above a specified level. qt enables one to ―reduce to a common denominator‖ different products, as well as similar products, but produced by different manufacturers. qt reflects the state-of-the-art in a particular field of engineering, and the typical requirements for the product performance. however, if a product passes the today‘s qt for opto-electronic products, it is not always clear why it was good, and if it fails the tests, it is usually equally unclear what could be done to improve its reliability. since qt is not failure oriented, it is unable to provide the most important ultimate information about the reliability of the product – the reliability physics behind the failure and the pof after the given time in service under the given operation conditions. foat on the other hand, is aimed, first of all, at revealing and understanding the physics of the expected or occurred failures. that is why it could be referred to as knowledge oriented testing. unlike qts, foat is able to detect the possible failure modes and mechanisms. foat end points are cycles or durations that are scaled to the use environments. another possible objective of the foat is, time permitting, to accumulate failure statistics. thus, foat deals with the two major aspects of the re– physics and statistics of failure. adequately planned, carefully conducted, and properly interpreted foat provides a consistent basis for the prediction of the pof after the given time in service. welldesigned and thoroughly implemented foat can facilitate dramatically the solutions to many engineering and business-related problems, associated with the cost effectiveness and time-to-market. this information can be helpful in understanding what should be changed to design a viable and reliable product. this is because any structural, materials and/or technological improvement can be ―translated‖, using the foat data, into the pof for the given duration of operation under the given service (environmental) conditions. foat should be conducted in addition to the qt. there might be also situations, when foat can be used as an effective substitution for the qt, especially for new products, when acceptable qualification standards do not yet exist. while it is the qt that makes a device into a product, it is the foat that enables one to understand the reliability physics behind the product and, based on the appropriate pm, to create a reliable product with the predicted or even specified pof. fiber optics engineering: physical design for reliability 175 2.6. burn-in testing (bit) as a special type of failure oriented accelerated testing (foat) burn-in (―screening‖) testing (bit) is widely implemented to detect and eliminate infant mortality failures. bit could be viewed as a special type of manufacturing foat. bit is needed to stabilize the performance of the device in use. bit is supposed to stimulate failures in defective devices by accelerating the stresses that will cause these devices to fail without damaging good items. the bathtub curve of a device that undergone bit is supposed to consist of a steady state and wear-out portions only. the rationale behind the bit is based on a concept that mass production of electronic devices generates two categories of products that passed qt: 1) robust (―strong‖) components that are not expected to fail in the field and 2) relatively unreliable (―week‖) components (―freaks‖) that, if shipped to the customer, will most likely fail in the field. 2.7. failure oriented accelerated testing (foat): predictive modeling (pm) foat cannot do without simple and meaningful predictive models. it is on the basis of such models that one decides which parameter should be accelerated, how to process the experimental data and, most importantly, how to bridge the gap between what one ―sees‖ as a result of the accelerated testing and what he/she will possibly ―get‖ in the actual operation conditions. by considering the fundamental physics that might constrain the final design, pm can result in significant savings of time and expense and shed additional light on the physics of failure. pm can be very helpful to predict reliability at conditions other than the foat and can provide important information about the device performance. modeling can be helpful in optimizing the performance and lifetime of the device, as well as to come up with the best compromise between reliability, cost effectiveness and time-to-market. a good foat pm does not need to reflect all the possible situations, but should be simple, should clearly indicate what affects what in the given phenomenon or structure, be suitable/flexible for new applications, with new environmental conditions and technology developments, as well as for the accumulation, on its basis, the reliability statistics. the scope of the model depends on the type and the amount of information available. a foat pm does not have to be comprehensive, but has to be sufficiently generic, and should include all the major variables affecting the phenomenon (failure mode) of interest. it should contain all the most important parameters that are needed to describe and to characterize the phenomenon of interest, while parameters of the second order of importance should not be included into the model. the most widespread foat pm are: power law (used when the physics of failure is unclear); boltzmann-arrhenius‘ equation (used when there is a belief that the elevated temperature is the major cause of failure) and its numerous extensions; coffin-manson‘s and related equations; crack growth equations (used to assess the fracture toughness of brittle materials); miner-palmgren‘s rule (used to consider the role of fatigue when the yield stress is not exceeded); creep rate equations; weakest link model (used to evaluate the mttf in extremely brittle materials with defects); stress-strength interference model, which is, perhaps, the most flexible and well substantiated model. 176 e. suhir 2.8. safety factor (sf) direct use of the probability of non-failure is often inconvenient, since, for highly reliable items, this probability is expressed by a number which is very close to one, and, for this reason, even significant than in the item‘s (system‘s) design, which have an appreciable impact on the item‘s reliability, may have a minor effect on the probability of non-failure. in those cases when both the mean value, <ψ>, and the standard deviation, ŝ, of the margin of safety (or any other suitable characteristic of the item‘s reliability, such as stress, time-to-failure, temperature, displacement, affected area, etc.), are available, the safety factor (safety index, reliability index) sf can be used as a suitable reliability criterion. if the probability distribution density f (ψ) of the random safety margin ψ for the ttf is anticipated or established, then the mean value  ψ  and the standard deviation sψ of this margin can be determined as  ψ  =  0  f (ψ)ψdψ, and sψ =  0  f (ψ)(ψ   ψ ) 2 dψ, and the corresponding sf can be evaluated as sf =  ψ  / sψ. the sf establishes both the upper limit of the reliability characteristic of interest (through the mean value of the corresponding margin of safety) and the accuracy with which this characteristic is defined (through the corresponding standard deviation). the structure of the sf indicates that it is acceptable that a system characterized by a high mean value of the safety margin (i.e., a system whose bearing capacity with respect to a certain stress/reliability-characteristic, is significantly higher than the level of loading) has a less accurately defined deviation from this mean value than a system characterized by a low mean value of the safety margin (i.e., a system whose bearing capacity is much closer to the possible level of loading). in other words, the uncertainty in the evaluation of the safety margin should be smaller for a more vulnerable design. 2.9. do opto-electronic (oe) industries need new approaches to qualify their devices into products? it should be widely recognized that the probability of a failure is never zero, but could be predicted and, if necessary, controlled and maintained at an acceptable low level. one effective way to achieve this is to implement the existing methods and approaches of prm techniques and to develop adequate pdfr methodologies. these methodologies should be based mostly on foat and on a widely employed predictive modeling effort. foat should be carried out in a relatively narrow but highly focused and timeeffective fashion for the most vulnerable elements of the design of interest. if the qt has a solid basis in foat, pm and pdfr, then there is reason to believe that the product of interest will be sufficiently robust in the field. the qt could be viewed as ―quasi-foat,‖ as a sort-of the ―initial stage of foat‖ that more or less adequately replicates the initial nondestructive, yet full-scale, stage of foat. we expect that the suggested approach to the dfr and qt will be accepted by the engineering and manufacturing communities, implemented into the engineering practice and be adequately reflected in the future editions of the qt specifications and methodologies. the pdfr-based qt will still be non-destructive. such qts could be designed, therefore, as a sort of mini-foat that, unlike the actual, ―full-scale‖ foat, is non-destructive and conducted on a limited scale. the duration and conditions of such ―mini-foat‖ qt should fiber optics engineering: physical design for reliability 177 be established based on the observed and recorded results of the actual foat, and should be limited to the stage when no failures in the actual full-scale foat were observed. prognostics and health management (phm) technologies (such as ―canaries‖) should be concurrently tested to make sure that the safe limit is not exceeded. it is important to understand the reliability physics that underlies the mechanisms and modes of failure in electronics and photonics components and devices. no statistics is able to replace understanding of reliability physics underlying a particular design and modes of failure. statistical assessments could and should be conducted when there is a good reason to believe that an adequately reliable product is on the way. as to the foat, it should be thoroughly implemented, so that the qt is based on the foat information and data. pdfr concept should be widely employed. since foat cannot do without predictive modeling, the role of such modeling, both computer-aided and analytical, in making the suggested new approach to product qualification practical and successful. 3. conclusion the application of the methods and approaches of methods and approaches of materials physics and structural analysis can be very helpful in creating a viable and reliable fiber optics products and networks. the probabilistic design for reliability (pdfr) concept enables one to design and fabricate a viable and reliable optoelectronic product. references [1] e. suhir, ―structural analysis in microelectronics and fiber optics‖, van-nostrand, new york, 1991. [2] e. suhir, r.c. cammarata, d.d.l. chung, m. jono, ―mechanical behavior of materials and structures in microelectronics‖, mrs symposia proceedings, vol.226, 1991. [3] e. suhir, ―structural analysis in fiber optics‖, in j. menon, ed., ―trends in lightwave technology‖, council of scientific information, india, 1995. [4] e. suhir, m. fukuda, and c.r. kurkjian, eds., ―reliability of photonic materials and structures‖, mrs symposia proceedings, vol. 531, 1998. [5] e. suhir, ―the future of microelectronics and photonics and the role of mechanics and materials‖, asme j. electr. pack., march 1998. [6] e. suhir, ―fiber optics structural mechanics-brief review‖, editor‘s note, asme j. electr. pack., sept. 1998. [7] e. suhir, ―microelectronics and photonics – the future‖, microelectronics journal, vol.31, no.11-12, 2000. [8] driessen, r. g. baets, j. g. mcinerney, and e. suhir, ―laser diodes, optoelectronic devices, and heterogeneous integration‖, spie press, 2003. [9] e. suhir, ―microelectronic and photonic systems: role of structural analysis‖, interpack’2005, san francisco, july 2005. [10] e. suhir, c.p. wong, y.c. lee, eds. ―microand opto-electronic materials and structures: physics, mechanics, design, packaging, reliability‖, 2 volumes, springer, 2008. [11] e. suhir, ―optical fiber interconnects: design for reliability‖, society of optical engineers (spie), proc. of spie, vol. 7607 760717-8, 2010. [12] b. welker, m. uschitsky, e. suhir, s. kher, g. bubel, ―finite element analysis of the optical fiber structures‖, in e. suhir, ed., ―structural analysis in microelectronics and fiber optics‖, symp. proc., asme press, 1996. [13] e. suhir, ―modeling of the mechanical behavior of microelectronic and photonic systems: attributes, merits, shortcomings, and interaction with experiment‖, proc. 9-th int. congr. on experim. mech., orlando, fl., june 5-8, 2000. [14] e. suhir, ―thermo-mechanical stress modeling in microelectronics and photonics‖, electronic cooling, vol.7, no.4, 2001. 178 e. suhir [15] e. suhir, ―modeling of thermal stress in microelectronic and photonic structures: role, attributes, challenges and brief review‖, special issue, asme journal of electronic packaging, vol.125, no.2, june 2003. [16] e. suhir, ―predictive modeling is a powerful means to prevent thermal stress failures in electronics and photonics‖, chipscale reviews, vol.15, no.4, july-august 2011. [17] e. suhir, ―stress modeling in polymer coated optical glass fibers‖, session honoring prof. a. chudnovsky, 2014 antec, las vegas, nv, april 28-may 3, 2014. [18] e. suhir, ―mechanical behavior of materials in microelectronic and fiber optic systems: application of analytical modeling-review‖, mrs symp. proc., vol. 226, 1991. [19] e. suhir, ―analytical stress-strain modeling in photonics engineering: its role, attributes and interaction with the finite-element method‖, laser focus world, may 2002. [20] e. suhir, ―modeling of thermal stress in microelectronic and photonic structures: role, attributes, challenges and brief review‖, special issue, asme j. electr. packaging (jep), vol.125, no.2, june 2003. [21] e. suhir, ―analytical thermal stress modeling in physical design for reliability of microand opto-electronic systems: role, attributes, challenges, results‖, in e. suhir, cp wong, yc lee, eds. ―microand optoelectronic materials and structures: physics, mechanics, design, packaging, reliability‖, springer, 2007. [22] e. suhir, ―analytical thermal stress modeling in electronic and photonic systems‖, asme app. mech. reviews, invited paper, vol.62, no.4, 2009. [23] e. suhir, ―thermal stress failures: predictive modeling explains the reliability physics behind them‖, imaps advanced microelectronics, vol.38, no.4, july/august 2011. [24] e. suhir, ―bending performance of clamped optical fibers: stresses due to the end off-set‖, applied optics, vol. 28, no. 3, february 1989. [25] e. suhir, ―predicted curvature and stresses in an optical fiber interconnect subjected to bending‖, ieee/osa journal of light-wave technology, vol.14, no.2, 1996. [26] e. suhir, ―bending of a partially coated optical fiber subjected to the ends off-set‖, ieee/osa journal of lightwave technology, vol. 12, no.2, 1997. [27] e. suhir, ―optical fiber interconnect subjected to a not-very-small ends off-set: effect of the reactive tension‖, mrs symposia proceedings, vol. 531, 1998. [28] e. suhir, ―bending stress in an optical fiber interconnect experiencing significant ends off-set‖, mrs symposia proceedings, vol. 531, 1998. [29] e. suhir, ―method and apparatus for proof-testing optical fibers‖, us patent #6,119,527, 1998. [30] e. suhir, ―optical fiber interconnect with the ends offset and axial loading: what could be done to reduce the tensile stress in the fiber?‖, j. appl. phys., vol.88, no.7, 2000. [31] e. suhir, ―method for determining and optimizing the curvature of a glass fiber for reducing fiber stress‖, us patent #6,016,377, 2000. [32] e. suhir, ―method of improving the performance of optical fiber, which is interconnected between two misaligned supports‖, u.s. patent #6,314,218, 2001. [33] e. suhir, ―interconnected optical devices having enhanced reliability‖, u.s. patent #6,327,411, 2001. [34] e. suhir, ―optical fiber interconnects having offset ends with reduced tensile strength and fabrication method‖, us patent #6,606,434, 2003. [35] suhir e., ―analysis and optimization of the input/output fiber configuration in a laser package design‖, asme journal of electronic packaging, vol.117, no.4, 1995. [36] e. suhir, ―‘optical glass fiber bent on a cylindrical surface‖, mrs symposia proceedings, vol.531, 1998. [37] e. suhir,―optimized configuration of an optical fiber ―pigtail‖ bent on a cylindrical surface‖, in t. winkler and a, schubert, eds., ―materials mechanics, fracture mechanics, micromechanics‖ anniversary volume in honor of b. michel’s 50th birthday, fraunhofer izm, berlin, 1999. [38] e. suhir, ―method for determining and optimizing the curvature of a glass fiber for reduced fiber stress‖, us patent #6,016,377, 2000. [39] j.b. murgatroyd, "the strength of glass fibres. part ii. the effect of heat treatment on strength", j. soc. glass tech.,28, 1944. [40] d. sinclair, ―a bending method for measurement of the tensile strength and young‘s modulus of glass fiber‖, journal of applied physics, vol.21, 1950. [41] krause, j.t., l.r. testardi, and r.n. thurston, ―deviations from linearity in the dependence of elongation upon force for fibers of simple glass formers and of glass optical light-guides‖, physics and chemistry of glasses, vol.20, 1979. [42] p.w. france, paradine, m.j., reeve, m.h., and newns, g.r., ―liquid nitrogen strength of coated optical glass fibers‖, journal of materials science, vol.15, 1980. fiber optics engineering: physical design for reliability 179 [43] s.f. cowap, and s.d. brown, ―static fatigue testing of a hermetically sealed optical fiber‖, american ceramic society bulletin, vol.63, no.3, 1984. [44] m.j. matthewson, c. r. kurkjian and s. t. gulati, "strength measurement of optical fibers in bending", j. am. ceram. soc. vol.69, no.1, 1986. [45] j.n. mcmullin, and j.e. freeman, ―on the shape of a bent fiber‖, ieee/osa j. light-wave techn., vol.8, no.7, 1990. [46] e. suhir, ―effect of the nonlinear stress-strain relationship on the maximum stress in silica fibers subjected to two-point bending‖, applied optics, vol. 32, no. 9, 1993. [47] m. muraoka, ―the maximum stress in optical glass fibers under two-point bending‖, asme j. electr. pack., vol.123, march 2000. [48] e. suhir, v. ogenko, d. ingman, ―two-point bending of coated optical fibers‖, proceedings of the phomat’2003 conference, san-francisco, ca, august 2003. [49] e. suhir, ―stresses in dual-coated optical fibers‖, asme journal of applied mechanics, vol.55, no.10, 1988. [50] o.s. gebizioglu, i.m. plitz, ―self-stripping of optical fiber coatings in hydrocarbon liquids and cable filling compounds‖, optical engineering, vol.30, no.6, 1991. [51] e. devadoss, ―polymers for optical fiber communication systems‖, journal of scientific and industrial research, vol.51, no.4, 1992. [52] s.t. shiue, ―thermal stresses in tightly jacketed double-coated optical fibers at low temperature‖, journal of applied physics, vol.76, no.12, 1994. [53] e. suhir, ―approximate evaluation of the interfacial shearing stress in circular double lap shear joints, with application to dual-coated optical fibers‖, int. j. solids and structures, vol.31, no.23, 1994. [54] p. ostojic, ―stress enhanced environmental corrosion and lifetime prediction modeling in silica optical fibers‖, journal of materials science, vol.30, no.12, 1995. [55] w.w. king, and c.j. aloisio, ―thermomechanical mechanism for delamination of polymer coatings from optical fibers‖, asme journal of electronic packaging, vol.119, no.2, 1997. [56] e. suhir, ―thermal stress failures in microelectronics and photonics: prediction and prevention‖, future circuits international, issue #5, 1999. [57] e. suhir, ―thermomechanical stress modeling in microelectronics and photonics‖, electronic cooling, vol.7, no.4, 2001. [58] e. suhir, ―polymer coated optical glass fibers: review and extension‖, proceedings of the polytronik’2003, montreaux, october 21-24, 2003. [59] e. suhir, ―mechanics of coated optical fibers: review and extension‖, ectc’2005, orlando, florida, 2005. [60] e. suhir, j. nicolics, c. gu, a. bensoussan, l. bechou, ―analytical stress model for the evaluation of thermal stresses in a cylindrical tri-material body with application to optical fibers‖, j. electrical and control engineering, vol.3 no.5, december 2013. [61] e. suhir, ―thermal stress failures in electronics and photonics: physics, modeling. prevention‖, j. thermal stresses, june 3, 2013. [62] e. suhir, ―predicted thermal mismatch stresses in a cylindrical bi-material assembly adhesively bonded at the ends‖, asme j. appl. mech., vol.64, no. 1, 1997. [63] e. suhir, ―thermal stress in a polymer coated optical glass fiber with a low modulus coating at the ends‖, j. mat. res., vol. 16, no. 10, 2001. [64] e. suhir, ―coated optical glass fiber‖, us patent #6,647,195, 2003. [65] e. suhir, ―on a paradoxical situation related to bonded joints: could stiffer mid-portions of a compliant attachment result in lower thermal stress?‖, jsme j. solid mech. and materials engineering (jsmme), vol.3, no.7, 2009. [66] katsuyama, y. mitsunaga, y. isida, and k. ishihara, "transmission loss of coated optical fiber at low temperature," appl. opt., no. 22, 1983. [67] d.c.l. vangheluwe, "exact calculation of the spring constant in the buckling of optical fibers," appl. opt., 23, 1984. [68] e. suhir, ―effect if the initial curvature on the low temperature microbending in optical fibers‖, ieee/osa journal of lightwave technology, vol.6, no.8, 1988. [69] e. suhir, ―spring constant in the buckling of dual-coated optical fibers‖, ieee/osa journal of lightwave technology, vol.6, no.7, 1988. [70] s.t. shiue, ―design of double-coated optical fibers to minimize hydrostatic-pressure-induced microbending losses‖, ieee photonics technology letters, vol.4, no.7, 1992. 180 e. suhir [71] s.t. shiue, and s.b. lee, ―thermal stresses in double-coated optical fibers at low temperature‖, journal of applied physics, vol.72, no.1, 1992. [72] s.t. shiue, ―axial strain-induced microbending losses in double-coated optical fibers‖, journal of applied physics, vol.73, no.2, 1993. [73] f. cocchini, ―double-coated optical fibers undergoing temperature variations-the influence of the mechanical behavior on the added transmission losses‖, polymer engineering and science, vol.34, no.5, 1994. [74] s.t. shiue, ―the axial strain-induced stresses in double-coated optical fibers‖, journal of the chinese institute of engineers, vol.17, no.1, 1994. [75] s.t. shiue, ―thermally induced microbending losses in double-coated optical fibers at low temperature‖, materials chemistry and physics, vol.38, no.2, 1994. [76] e. suhir, v. mishkevich, j. anderson, ―how large should a periodic external load be to cause appreciable microbending losses in a dual-coated optical fiber?‖, in e. suhir, ed., ―structural analysis in microelectronics and fiber optics‖, asme press, 1995. [77] s.t. shiue, ―the spring constant in the buckling of tightly jacketed double-coated optical fibers‖, j. appl. phys., vol.81, no.8, 1997. [78] e. suhir, ―how long should a beam specimen be in bending tests?‖, asme journal of electronic packaging, vol.112, no.1, 1990. [79] e. suhir, ―stresses in a coated glass fiber stretched on a capstan‖, applied optics, vol.29, no.18, 1990. [80] e. suhir, ―can the curvature of an optical glass fiber be different from the curvature of its coating?‖, international journal of solids and structures, vol.30, no.17, 1993. [81] e. suhir, ―analytical modeling of the interfacial shearing stress during pull-out testing of dualcoated lightguide specimens‖, applied optics, vol.32, no.7, 1993. [82] e. suhir, ―pull testing of a glass fiber soldered into a ferrule: how long should the test specimen be?‖, applied optics, vol.33, no.19, 1994. [83] e. suhir, l. bechou, ―saint-venant‘s principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing‖, esref, arcachon, france, 2013. [84] e. suhir, ―elastic stability, free vibrations, and bending of optical glass fibers: the effect of the nonlinear stress-strain relationship‖, applied optics, vol.31, vol.24, 1992. [85] s.t. shiue, ―the hydrostatic pressure induced stresses in double-coated optical fibers‖, journal of the chinese institute of engineers‖, vol.17, no.4, 1994. [86] e. suhir, ―coated optical fiber interconnect subjected to the ends offset and axial loading‖, int. workshop on reliability of polymeric materials and plastic packages of ic devices, paris, nov. 29dec.2, 1998, asme press, 1998. [87] e. suhir, ―critical strain and postbuckling stress in polymer coated optical fiber interconnect: what could be gained by using thicker coating?‖, int. workshop on reliability of polymeric materials and plastic packages of ic devices, paris, nov. 29-dec.2, 1998, asme press, 1998. [88] e. suhir, ―elastic stability of a dual-coated optical fiber of finite length‖, j. appl. physics, vol.102, no.5, 2007. [89] e. suhir, ―elastic stability of a dual-coated optical fiber with a stripped off coating at its end‖, j. appl. physics, vol. 102, no.4, 2007. [90] e. suhir, ―lateral compliance of a compressed cantilever beam, with application to micro-electronic and fiber-optic structures‖, j. appl. physics d, vol.41,no.1, 2008. [91] e. suhir, ―elastic stability of a dual-coated fiber‖, spie paper #8621-37, photonics west, february 2011. [92] e. suhir, ―thermally induced stresses in an optical glass fiber soldered into a ferrule‖, ieee/osa journal of lightwave technology, vol.12, no.10, 1994. [93] e. suhir, ―solder materials and joints in fiber-optics: reliability requirements and predicted stresses‖, proceedings of the international symposium ―design and reliability of solder joints and solder interconnections‖, orlando, fl., 1997. [94] e. suhir, ―elastic stability, free vibrations, and bending of optical glass fibers: the effect of the nonlinear stress-strain relationship‖, applied optics, vol.31, no.24, 1992. [95] e. suhir, ―is the maximum acceleration an adequate criterion of the dynamic strength of a structural element in an electronic product?‖, ieee transactions on components, packaging and manufacturing technology, vol.20, no.4, 1997. [96] e. suhir, ―dynamic response of microelectronics and photonics systems to shocks and vibrations‖, interpack’1997 proc., hawaii, june 15-19, 1997. fiber optics engineering: physical design for reliability 181 [97] e. suhir, ―could shock tests adequately mimic drop test conditions?‖, ieee ectc conference proceedings, san-diego, ca, may 28-31, 2002. [98] c.y. zhou, t.x. yu, e. suhir, ―design of shock table tests to mimic real-life drop conditions‖, ieee cpmt transactions, vol.32, no.4, 2009. [99] e. suhir, m. vujosevic, and t. reinikainen, ―nonlinear dynamic response of a ―flexible-and-heavy‖ printed circuit board (pcb) to an impact load applied to its support contour‖, j. appl. physics, d, 42, no.4, 2009. [100] e. suhir,―linear response to shocks and vibrations‖, in e. suhir, d.steinberg and t.yu, ―structural dynamics of electronic and photonic systems‖, john wiley, hoboken, nj., 2011. [101] e. suhir, ―linear and nonlinear vibrations caused by periodic impulses‖. in e.suhir, d.steinberg and t.yu, ―structural dynamics of electronic and photonic systems‖, john wiley, hoboken, nj., 2011. [102] e. suhir, ―random vibrations of structural elements in electronic and photonic systems‖, in e.suhir, d.steinberg and t.yu, ―structural dynamics of electronic and photonic systems‖, john wiley, hoboken, nj., 2011. [103] c.y. zhou, t.x. yu, s.w. ricky lee and e. suhir, ―shock test methods and test standards for portable electronic devices‖, in e. suhir, d. steinberg and t. yu, ―structural dynamics of electronic and photonic systems‖, john wiley, hoboken, nj., 2011. [104] e. suhir, ―linear response of a single-degree-of-freedom system to an impact load: could shock tests adequately mimic drop test conditions?‖, in e. suhir, d. steinberg and t. yu, ―structural dynamics of electronic and photonic systems‖, john wiley, hoboken, nj., 2011. [105] e. suhir, ―predictive modeling of the dynamic response of electronic systems to shocks and vibrations‖, asme appl. mech. reviews, vol. 63, no.5, march, 2011. [106] e. suhir, ―structural dynamics of electronics systems‖, modern physics letters b (mplb), vol. 27, no. 7, march 2013. [107] e. suhir, and d. ingman, ―new hermetic coating for optical fiber dramatically improves strength: new nano-particle material (npm) and npm-based new generation of optical fiber claddings and coating‖, us navy workshop, st. louis, mo, 2003: could nano-technology make a difference?‖, polytronic‘04, portland, or, september 13-15, 2001. [108] e. suhir, ―polymer coated optical glass fiber reliability: could nano-technology make a difference?‖, polytronic‘04, portland, or, september 13-15, 2004. [109] e. suhir, ―new nano-particle material (npm) for microand opto-electronic packaging applications‖, ieee workshop on advanced packaging materials, irvine, march 2005. [110] d. ingman and e. suhir, ―optical fiber with nano-particle overclad‖, us patent, #7,162,138 b2, 2007. [111] d. ingman and e. suhir, ―optical fiber with nano-particle cladding‖, us patent, #7,162,137 b2, 2007. [112] e. suhir, ―fiber-optics structural mechanics and nano-technology based new generation of fiber coatings: review and extension‖, in e. suhir, cp wong, yc lee, eds. ―microand opto-electronic materials and structures: physics, mechanics, design, packaging, reliability‖, springer, 2007. [113] e. suhir, d. ingman, ―highly compliant bonding material and structure for microand optoelectronic applications‖, in e. suhir, cp wong, yc lee, eds. ―microand opto-electronic materials and structures: physics, mechanics, design, packaging, reliability‖, springer, 2007. [114] t. mirer, ,d. ingman, e. suhir, ―reliability improvement through nano-particle-material-based fiber structures‖, optical fiber technology, v. 13, 2007. [115] e. suhir, ―polymer coating of optical silica fibers, and a nanomaterial-based coating system‖, keynote presentation, polytronic‘2007, proceedings of the international conference on polymeric materials for microand opto-electronics applications, tokyo, japan, january 14-16, 2007. [116] d. ingman, v. ogenko, e. suhir, a. glista, ―moisture resistant nano-particle material and its applications‖, us patent #7,321,714b2, 2008. [117] e. suhir, ―mechanical approach to the evaluation of the low temperature threshold of added transmission losses in single-coated optical fibers‖, ieee/osa journal of light-wave technology, vol.8, no.6, 1990. [118] e. suhir, ―free vibrations of a fused bi-conical taper lightwave coupler‖, int. j. solids and structures, vol. 29, no. 24, 1992. [119] e. suhir, ―vibration frequency of a fused bi-conical taper (fbt) lightwave coupler‖, ieee/osa journal of lightwave technology, vol. 10, no. 7, 1992. [120] e. suhir, ―predicted stresses and strains in fused bi-conical taper couplers subjected to tension‖, applied optics, vol. 32, no. 18, 1993. 182 e. suhir [121] e. suhir, and j.j. vuillamin, jr., "effects of the cte and young's modulus lateral gradients on the bowing of an optical fiber: analytical and finite element modeling", optical engineering, vol. 39, no. 12, 2000. [122] e. suhir, ―apparatus and method for thermostatic compensation of temperature sensitive devices‖, us patent #6,337,932, 2002. [123] e. suhir, r. mahajan, ―are current qualification practices adequate?―, circuit assembly, april 2011 [124] e. suhir,‖accelerated life testing (alt) in microelectronics and photonics: its role, attributes, challenges, pitfalls, and interaction with qualification tests‖, asme j. electr. packaging (jep), vol. 124, no. 3, 2002. [125] e. suhir, ―failure-oriented-accelerated-testing (foat) and its role in making a viable ic package into a reliable product‖, circuits assembly, july 2013. [126] e. suhir, a. bensoussan, j. nicolics, l. bechou, ―highly accelerated life testing (halt), failure oriented accelerated testing (foat), and their role in making a viable device into a reliable product‖, 2014 ieee aerospace conference, big sky, montana, march 2014. [127] e. suhir, ―failure-oriented-accelerated-testing (foat) and its role in making a viable package into a reliable product‖, semi-term 2014, san jose, ca, march 9-13, 2014. [128] e. suhir, ―how to make a photonic device into a product: role of accelerated life testing‖, keynote address at the international conference of business aspects of microelectronic industry, hong-kong, january 2003. [129] e. suhir,―reliability and accelerated life testing‖, semiconductor international, february 1, 2005. [130] e. suhir,―when reliability is imperative, ability to quantify it is a must‖, imaps advanced microelectronics, august 2012. [131] e. suhir, "applied probability for engineering and scientists", mcgraw hill, new york, 1997. [132] e. suhir, ―thermal stress modeling in microelectronics and photonics packaging, and the application of the probabilistic approach: review and extension‖, imaps int. j. of microcircuits and electronic packaging, vol.23, no.2, 2000 (invited). [133] e. suhir, ―probabilistic design for reliability‖, chipscale reviews, vol.14, no.6, 2010. [134] e. suhir, ―remaining useful lifetime (rul): probabilistic predictive model‖, int. j. of phm, vol 2(2), 2011. [135] e. suhir, r. mahajan, a. lucero, l. bechou, ―probabilistic design for reliability (pdfr) and a novel approach to qualification testing (qt)‖, 2012 ieee/aiaa aerospace conf., big sky, montana, 2012 [136] e. suhir, ―how long could/should be the repair time for high availability?‖, modern physics letters b (mplb), vol.27, aug.30, 2013. [137] e. suhir, ―could electronics reliability be predicted, quantified and assured?‖ microelectronics reliability, no. 53, april 15, 2013. [138] e. suhir, ―boltzmann-arrhenius-zhurkov (baz) model in physics-of-materials problems‖, modern physics letters b (mplb), vol.27, april 2013. [139] e. suhir, l. bechou, ―availability index and minimized reliability cost‖, circuit assemblies, february 2013. [140] a. bensoussan, and e. suhir, ―design-for-reliability (dfr) of aerospace electronics: attributes and challenges", 2013 ieee aerospace conference, big sky, montana, march 2013. [141] e. suhir, ―assuring aerospace electronics and photonics reliability: what could and should be done differently‖, 2013 ieee aerospace conference, big sky, montana, march 2013. [142] e. suhir, ―predicted reliability of aerospace electronics: application of two advanced probabilistic techniques‖, 2013 ieee aerospace conference, big sky, montana, march 2013. [143] e. suhir, a. bensoussan, ―application of multi-parametric baz model in aerospace optoelectronics‖, 2014 ieee aerospace conference, big sky, montana, march 2014. [144] e. suhir, ―combined statisticsand physics-of-failurebased approach in the probabilistic design for reliability of opto-electronics products‖, optical engineering, 2014. instruction facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. 1 25 doi: 10.2298/fuee1701001b microelectronic reliability models for more than moore nanotechnology products  alain bensoussan institute of technology antoine de saint exupery, toulouse, france abstract. disruptive technologies face a lack of reliability engineering standards and physics of failure (pof) heritage. devices based on gan, sic, optoelectronics or deepsubmicron nanotechnologies or 3d packaging techniques for example are suffering a vital absence of screening methods, qualification and reliability standards when anticipated to be used in hi-rel application. to prepare the hirel industry for just-in-time cots, reliability engineers must define proper and improved models to guarantee infant mortality free, long term robust equipment that is capable of surviving harsh environments without failure. furthermore, time-to-market constraints require the shortest possible time for qualification. breakthroughs technologies are generally industrialized for short life consumer application (typically smartphone or new pcs with less than 3 years lifecycle). how shall we qualify these innovative technologies in long term hi-rel equipment operation? more than moore law is the paradigm of updating what are now obsolete, inadequate screening methods and reliability models and standards to meet these demands. a state of the art overview on quality assurance, reliability standards and test methods is presented in order to question how they must be adapted, harmonized and rearranged. here, we quantify failure rate models formulated for multiple loads and incorporating multiple failure mechanisms to disentangle existing reliability models to fit the 4.0 industry needs? key words: reliability, gan, sic, dsm, nanotechnology, more than moore. 1. introduction hi-rel embedded system applications in aeronautic, space, railways, nuclear, telecommunication rely on reliability engineering standards [1] [2] related to physics of failure (pof) [3]. when systems are constructed on innovative and disruptive technologies, such standards and methods are in general obsolete and inadequate to prepare their industrialization and qualification for just-in-time commercialization. suggested probabilistic design for reliability (pdfr) [4] and prognostic health monitoring (phm) [5] concepts open the door to anticipate and assess their reliability and quantification. reliability prediction as remaining useful life (rul), failure rate and accelerating factors are mathematic and tools related to pof describing macroscopic changes in materials and devices  received may 18, 2016 corresponding author: alain bensoussan irt saint exupery, 118 route de narbonne cs 44248, 31432 toulouse cedex 4, france (e-mail: alain.bensoussan@irt-saintexupery.com) 2 a. bensoussan having their own microscopic behavior. indeed statistics helps to predict population comportment but are unable to predict the performance on a single item as part of this population. this is exactly what did ludwig boltzmann (1844-1906) [6] when he gave a new perception of the universe on microscopic scale in the kinetic theory: a macroscopic state for some probability distribution of possible microstates. section 1 of this paper will review existing standards and clarify some route to implement and generalize existing reliability jedec or mil standards. these standard methods develop failure mechanism models and their associated activation energies or acceleration factors that may be used in making system failure rate estimations. for large scale integration processes in the nanoscale range (now lower than the 10 nm) used for microcontrollers or pc‟s chip, the physic of interaction, the temperature distributions and the critical path for signal processing are extremely variable. the average value of the apparent activation energies of the various failure mechanisms can‟t be exploited because a) different failure mechanisms have different weighting factors and effects differently each portion of an ic‟s and b) the apparent activation energy values affect the acceleration factor exponentially rather than linearly. section 2 will detail accelerated stress models as exposed in well-established jedec documents prior to recall the multiple stress boltzmann-arrhenius-zhurkov (baz) reliability model [7], [8] which can be considered also as a development of the cox proportional hazards model [9]. we will settle multiple failure mechanisms [10] as mandatory to be pondered for dsm nanotechnology nodes and will show how the htol reliability model elaborated by j. bernstein [11] [12] can support a more robust easy-to-use theory. section 3, will show how a multi-dimensional tool named m-storm (multi-physics multi-stressors predictive reliability model) [13] can be implemented in a concrete situation existing for the deep-submicron process devices highlighting the remaining steps to be carried out for a complete tool release. 2. quality standard overview well-known quality standards in various industry domains rely or are close to military standards mil-std and jedec methods. now entering the 4.0 industry paradigm as the fourth industrial revolution (the age of cyber and robots), quality/reliability models and tools headed by health monitoring (hm) leads toward more crucial and vital questions. this section is not intended to be an exhaustive cookbook but on the other hand will highlight how generic approaches and hypotheses are considered to assure products and equipment‟s quality and how to built-in reliability products dynamically. the name “dynamically” means that hardware‟s and software‟s must be designed in order to preidentify and characterize system degradation when still in-operating condition. to diagnostic the healthiness of a system for anticipating failure requires to open new roads to imagine and to design dedicated hardware and software installed within the system itself and to define procedures and tests which will decide self-corrections at hardware and/or software level (artificial intelligence). this requires a high level of intelligence integration within a system or a product and this is the challenge of the 4.0 era. jedec or mil standards are generally based on the principle of separating the variables and considering a single stress at a time and a single failure mode and mechanism at a time. a failure mechanism may be characterized by how a degradation process proceeds including the microelectronic reliability models for more than moore nanotechnology products 3 driving force, e.g., oxidation, diffusion, electric field, current density. when the driving force is known, a mechanism may be described by an explicit failure rate model; identifying that model with associated parameters is the main objective. the existing technologies, extended also to highly critical innovative technologies, oblige design engineers to consider those driving forces to be quantified considering multiple internal stress parameters inducing interfering stress settings (current, voltage, power and temperature) and loads (dc and ac, environment as thermal cycling, radiation, electrostatic discharge -esd, electrostatic over-stress -eos, energetic electromagnetic pulse, etc.). 2.1. european standards as an example, the european cooperation for space standardization (ecss) (www.ecss.nl) is an initiative established to develop a coherent system of european space standards. the ecss organization standardization policy develops a documentation architecture with three branches (project management, product assurance and engineering) to overcome issues due to the existing standard resulting in higher costs, lower effectiveness and in a less competitive industry. the framework and basic rules of the system were defined with the involvement of the european space industry. a short overview of the main system documentation is presented here with the intention to show how, when and where the quality assurance requirements affect electronic parts supply chain considering long term harsh environment space missions. most of space product assurance documents are constructed to guarantee final customers‟ and operators‟ satisfaction for satellite mission duration greater than 18 years without repair. most of them rely on well-established technologies and products avoiding to use innovative products. the ecss-q-st-60c [2] standard defines the requirements for selection, control, procurement and usage of electronic, electrical, and electromechanical (eee) components for space projects considering the characteristics of the space environment condition. when selected, parts must be integrated on system based on best design practices. the “space product assurance derating eee components” ecss-q-st-30-11c [14] specifies electrical derating requirements applicable to eee components. derating is a long standing practice applied to components used on spacecraft‟s. cots microcontrollers and core ic chips produced on nanoscale technology are now integrating 1 billion transistors (below the 10 nm node) on a single chip with cash memory, i/o accesses, cpu, flash and ddr memory, all biased at low voltage (below 1v) and accessed at increasing clock frequency (few ghz). as derating is under the control of designers and manufacturers nanoscale makers: due to the tremendous increase of system capability, big data management, world-wide telecommunication and internet of things, the space industry must collaborate or impose new design rules if they want to use such innovative technologies. another scale, is for new packaging and connection techniques to be pondered. the ecss-q-st-70-08c, [15] ―space product assurance manual soldering of high-reliability electrical connections” is a standard defining the technical requirements and quality assurance provisions for the manufacture and verification of manually-soldered, high-reliability electrical connections. for temperatures outside a normal range (−55°c to +85°c) special design, verification and qualification testing is performed to ensure the necessary environmental survival capability. packaging and assembly reliability models must be improved too when additive manufacturing techniques and new materials for high power dissipation are mobilized. “commercial electrical, electronic and electromechanical (eee) 4 a. bensoussan components” document named ecss-q-st-60-13c [16] applies only to commercial components which meet technical parameters that are on the system application level demonstrated to be unachievable with existing space components or only achievable with qualitative and quantitative penalties. all of these normative documents as ecss and escc standards are generally based on mil-std and jedec test methods. component failures and system failures determination have been extensively described on handbook and tools but all of them are now mostly obsolete with respect to the emerging technologies proposed on the cots market. they are unable to predict and quantify the reliability of new products having short product‟s life cycle and being complex and technically highly sophisticated. 2.2. standards and handbooks for eee parts, the at&t reliability manual [17] is more than just a prediction methodology. although it contains component failure data, it outlines prediction models based on a decreasing hazard rate model, which is modeled using weibull data. fides [18] is a new reliability data handbook (available since january 2004). the fides guide is a global methodology for reliability engineering in electronics, developed by a consortium of french industry under the supervision of the french dod (dga). the important fact is that fides evaluation model proposes a reliability prediction with constant failure rates. the infant mortality and wear out periods are today excluded from the prediction. the iec 62380 electronic reliability prediction supports methods based on the latest european reliability prediction standard. it was originally, the rdf 2000 (ute c 80810, iec-62380-tr ed.1) [19] from cnet handbook previously published as rdf93 and covers most of the same components as mil-hdbk-217. mil-hdbk-217 [1] reliability prediction of electronic equipment, has been the main stay of reliability predictions for about 40 years, but it has not been updated since 1995. the siemens sn29500 [20] failure rates of components and expected values method was developed by siemens ag for use by siemens associates as a uniform basis for reliability prediction. the reliability prediction procedure for electronic equipment documents telcordia sr-332 [21] recommends methods for predicting device and unit hardware reliability. this procedure is applicable for commercial electronic products whose physical design, manufacture, installation, and reliability assurance practices meet the appropriate telcordia (or equivalent) generic and product-specific requirements. in july 2006, riac released 217plus tm [22] as the successor to the dod-funded, defense technical information center (dtic)-sponsored version 1.5 of the prism ® software tool. the rac (eprd) electronic parts reliability data handbook database is the same as that previously used to support the mil-hdbk-217, and is supported by prism ® . the models provided differ from those within mil-hdbk-217. the prism software is available from the reliability analysis center [23]. the models contain failure rate factors that account for operating periods, non-operating periods and cycling. traditional methods of reliability prediction model development have relied on the statistical analysis of empirical field failure rate data. the riac new approach is predicated on component models considering the combination of additive and multiplicative model forms that predict a separate failure rate for each class of failure mechanism. a typical example of a general failure rate model that takes this form is: microelectronic reliability models for more than moore nanotechnology products 5 (1) where, λ p = predicted failure rate λ o = failure rate from operational stresses π o = product of failure rate multipliers for operational stresses λe = failure rate from environmental stresses π e = product of failure rate multipliers for environmental stresses λ c = failure rate from power or temperature cycling stresses π c = product of failure rate multipliers for cycling stresses λ i = failure rate from induced stresses, including electrical overstress and esd λ sj = failure rate from solder joints π sj = product of failure rate multipliers for solder joint stresses one can note that part-count prediction assumes a “constant failure rate per part” as a linear combination (+ and x) of  factors and specific  factors. failure rate is for a stated period of the life of an item, the ratio of the total number of failures in a sample to the cumulative time of that sample. a consistent frame work for reliability qualification using the physics-of-failure (pof) concept is provided by the jedec jep148 procedure [24]. the physics-of-failure (pof) concept [25] is an approach to design and development of reliable product to prevent failure based on the knowledge of root-cause failure processes. it is based on understanding  relationships between requirements and the physical characteristics of the product (and their variation in the production process),  interactions of product materials with loads (stresses at application conditions) and their influence on product reliability with respect to the use conditions. 2.3. discussion reliability engineering and mathematics have been many times presented, see for example detailed by suhir, e. in his book “reliability applied probability for engineers and scientists”, mcgraw-hill, [26]. talking about reliability engineering of objects is studying property of complex elements that do not lend themselves to any restauration (repair) and have to be replaced after first failure. the reliability is completely due to their dependability. this property is measured by the probability that a device or a system will perform a required function under stated conditions of a stated period of time. suhir explain, this involves three major concepts: 1. probability: the performance of a group of devices in a system described as a failure rate. such an overall statistic does not have a meaning for an individual device. 2. definition of a “reliability function”: for a device, a failure is relatively easy to be fixed, based on guaranteed performance which can be measured. for a system, this concept is rather elusive and harder to set since based on customer satisfaction. 3. time: what is “time”, in defining reliability? there may be many critical time period, at component, equipment or at system level, but the reliability for each critical time period can be determined in appropriate terms. standards listed in section 1.2 are generally related to item as parts and system hardware functions based of constant failure rate considering the element of interest have been manufactured and screened efficiently, operating in a given environment and assuming 6 a. bensoussan wearout failure rate well beyond the operating end of life time (eol). the next sections developed in this paper will show how these hypotheses must be reexamined for present and future application based on new technologies but also on existing ones as deep sub micron nanotechnologies already used for asics, fpga or memories. the book from p. a. tobias and d.c. trindade [27] “applied reliability” (3 rd edition), is an extensive and powerful document exposing mathematics and methods, statistical software helping reliability engineers addressing applied industrial reliability problems. once developing statistical life distribution models, reliability prediction and quantification on emerging technology is somewhere a matter to look inside a fuzzy crystal. we are unable to obtain reasonable set of data from short endurance stress tests and extrapolate or approximate what should be the effect at normal use condition on their behavior. what a product is likely to experience at much lower stress knowing its failure rate at a higher stress? the model used to bridge the stress gap are known as acceleration models but assumes to be constructed and grounded on some hypotheses:  lot homogeneity and reproducibility: it is assumed components under stress are manufactured from an homogeneous lot and supposing no major change in manufacturing technology,  stress effects are representative, homogeneous and reproducible,  failure mechanism duplication: independent of level of stress, and reproducible,  the failure rate of a device is independent of time. this is the usual, but often very inappropriate, assumption in conventional reliability-prediction methods .  linear acceleration: when every time to failure, every distribution percentile is multiplied by the same acceleration factor to obtain, the projected values at another operating stress, we say we have linear acceleration [27].  temperature effect governed by arrhenius law: “things happen faster at high temperature”. lower temperatures may not necessarily increase reliability [10] [5], since some failure mechanisms are accelerated at lower temperature as seen for example for hot carrier degradation mechanisms. generally quality standards and prediction tools are focusing only on high temperature acceleration models.  multiplicity: multiple stresses (loads) and multiple failure mechanisms at a time (cf discussion in section 3 and 4).  pof signature: activation energy determined from experiments based on catastrophic degradation or related to electrical parameter drift (a predictor).  temperature definition: an accurate and agreed concept to be the core of reliability prediction tool based on thermal accelerated testing. reliability of electronic equipments are designed considering affected by the temperature. influence of temperature on microelectronics and system reliability published by p. lall, m. pecht and e. b. hakim in 1997 [28], discussed various modelling methodologies for temperature acceleration of microelectronic device failures. mil-hdbk-217, fides and jedec standards have advantages to describe such models but are mostly not adapted to breakthrough and new immature technologies. microelectronic reliability models for more than moore nanotechnology products 7 how to quantify reliability for disruptive technologies? knowing, a) multiple failure mechanisms are in competition, b) activation energies are parameters determined experimentally, c) based on accelerated tests carried out at extreme temperatures (both at high and low) and d) supposed to be constant but modified by stress conditions, physics of failure (pof) methodology is the alternative suggested approach in the mid 90‟s by the u.s., cadmp alliance now known as electronic components alliance [5]. problems arise when the failure mechanisms precipitated at accelerated stress levels are not activated in the equipment operating range as highlighted by lall, pecht and hakim [28]. since 2010, we first define a generalized multiple stress reliability model and suhir, e. published a comprehensive model called boltzmann-arrhenius-zhurkov (baz) model [7], [8], [29], [30]. the premises of this model was addressed by d. cox [9] in journal of the royal statistical society 1972. in last decade view, two advanced probabilistic design-for reliability (pdfr) concepts were addressed in application to the prediction of the reliability of aerospace electronics: 1) boltzmann-arrhenius-zhurkov (baz) model, which, in combination with the exponential law of reliability, and 2) extreme value distribution (evd) technique that can be used to predict the number of repetitive loadings that closes the gap between the capacity (stress-free activation energy) of a material (device) and the demand (loading), thereby leading to a failure. the second concern illustrated by the previous discussion is related to multiple failure mechanism being in competition. the monograph and papers published since 2008 by pr. j. bernstein [11], [25], [31] quite precisely define the context and the modified m-htol [12] approach. the development of which is part of the following section 2 and 3. 3. reliability mathematics and tools many books and papers define basic concepts in reliability and particularly on reliability prediction analysis such as a fmeca (failure modes, effects and criticality analysis), rbd (reliability block diagram) or a fault tree analysis. in reliability engineering and reliability studies, the general convention is to deal with unreliability and unavailability values rather than reliability and availability (see for example http://www.reliabilityeducation.com/):  the reliability r(t) of a part or system is defined as the probability that the part or system remains operating from time t0 to t1, set that it was operating at t0.  the availability, a(t) of a part or system is defined as the probability that the component or system is operating at time t1, given that it was operating at time t0.  the unavailability, q(t) of a part or system is defined as the probability that the component or system is not operating at time t1, given that it was operating at t0. hence, r(t) + f(t) = 1 or unreliability f(t)= 1 – r(t) and a(t) + q(t) = 1 (2) figure 1 shows the schematic representation of failure distribution functions. the instantaneous failure rate (ifr), also named the hazard rate (t), is the ratio of the number of failures during the time period t, for the devices that were healthy at the beginning of testing (operation) to the time period t. ( ) ( ) 1 ( ) f t t f t    (3) 8 a. bensoussan fig. 1 instantaneous failure rate, probability density function and reliability distribution functions the cumulative probability distribution function f(t) for the probability of failure is related to the probability density distribution function f(t) as 0 ( ) ( ). t f t f x dx  (4) and the reliability function r(t), the probability of non-failure is defined as ( ) 1 ( )r t f t  (5) failure rates are often expressed in term of failure units (fits): 1 fit = 1 failure in 10 9 device-hours. probability data obtained when performing accelerated tests (halt or foat) can be modeled by various distribution models, such as exponential law, weibull law, normal or log-normal distributions, etc. in most practical applications, life is a function of more than one or two variables (stress types). the next and an important question is how to consider and relate the reliability figures when applying other stresses than temperature, as thermal cycling or radiation? on jedec standard jep122g, reliability models as electromigration [32], ohmic contact degradation [33] [34], coffin-manson [35], eyring [36], humidity [37], time dependent dielectric breakdown tddb [38], hot carrier injection [39] [40] [41], hydrogen poisoning [42] [43], thermo-mechanical stress [44], nbti [45] are generally expressed by a function of stress parameter or by a function of an electrical predictor multiplying the exponential activation energy factor. talking about stress parameters named stressors or electrical predictors may sometimes be confusing because the first one (e.g. stressors), give warning on how is high or low the free gibbs energy barrier to cross, and the second concept (e.g. predictors) gives information on how fast the device will cross that barrier. the core of generalizing the existing models must unified this apparent antagonism by using precise definitions and effects. in general this has been unthank by major papers published. reader will see in the next paragraph how such confusion is considered. all studies argue and consider the activation energy are deduced experimentally as a constant with respect to temperature (low vs high), stress conditions, and other predictors as for example charge de-trapping for hot carrier degradation or nbti for pmos devices microelectronic reliability models for more than moore nanotechnology products 9 under negative gate voltages at elevated temperature. these models are generally applicable for a given technology. even some end-users and customers are focused to qualify lot production instead of a process. there is a need to simplify the forest of existing models. is it possible to harmonize the mathematics of the existing paradigm? first consideration is to define precisely the elements and roles of each parameter separating the thermodynamics (activation energy, free gibbs energy), stressor and predictor parameters and their effects in failure mechanisms. 3.1. reliability standards and accelerated stress models formerly, activation energy is related in one hand to a single pure temperature effect and disregard other stress parameters. it is true in second hand, the activation energy is defined as an effective activation energy mostly modified by several type of other stresses applied and failure mechanisms considered. steady state temperature stress tests are considered the only stress parameter affecting reliability and are typically time-dependent temperature related. failure mechanisms are thermally activated or not and can be either catastrophic or parametric (drift of characteristics). a sudden catastrophic failure can be observed due to electrical overstress and is called burnout or due to high electrical field inducing catastrophic breakdown. breakdown and burnout limits are also temperature dependent. as a consequence it is reasonable to consider a same failure mechanisms being induced by a pure thermal stress to a pure electrical stress: in this case any intermediate condition between these two extremes will be modeled by a pure arrhenius activation energy modified by a factor depending of stresses applied. this postulate justify the boltzmann-arrheniuszhurkov model (baz) presented in the section 2.2. the idealized experimental bathtub curve of a material or a device shown in figure 2 exhibits the combined effect of the statistics-related and reliability-physics-related processes. in the analysis developed by suhir [46], a probabilistic predictive model (ppm) is developed for the evaluation of the failure rates and the probabilities of non-failure. here we draw a synthetized view on how we can clarify some concept for a comprehensive harmonization of existing reliability model of failure mechanism:  internal electrical stresses labelled stressor parameters are responsible of the wearout failure rate (weibull  greater than 1). they are only of four types of applied and imposed stress conditions: they are voltage, current, dissipated power and input signal or esd/eos/emc energies and can be either static, dynamic, transient or surge. they are quantified with respect to their level of stress applied compared to their level of burnout instantaneous failure mode. but for sake of standardization and normalization they are limited by the maximum values allowed by the technology.  when device operates under external stress (thermal management constraints, packaging and assembly constraints, atmosphere contaminants, radiations environments), such stressor parameters level are modified with respect to their maximum burnout and breakdown limits thus accelerating wearout failures compared to temperature and biasing stress in the absence of external environment.  failure modes of interest are electrical or mechanical signatures related to failure mechanisms observed and are predictor parameters. such parameters can be measured as absolute drift value of electrical parameter or as relative percentage of drift. 10 a. bensoussan fig. 2 bathtub curve. weibull distribution with two parameters (shape and time).  constant failure rate (random) are caused by random defects and random events. the failure rate is modeled by a weibull shape parameter close to 1 which is equivalent to an exponential distribution law.  lot-to-lot production variation (respectively device-to-device) and performance dispersion from a single manufacturing lot (respectively device) will affect the burnout limits, inducing in return a change of percentage of stress applied on a given lot (device). statistic dispersion will affect the time to failure on similar way (producing the same statistical effect). such dispersion at lot and device level will impact the remaining useful life (rul) for some part of the population.  infant mortality failure population are caused by “defects” and correlates with defect-related yield loss. they are reduced by improved quality manufacturing and by screening. 3.2. baz model and transition state theory accelerated stresses design for reliability (dfr) is a set of approaches, methods and best practices that are supposed to be used at the design stage of the product to minimize the risk that it might not meet the reliability requirements, objectives and expectations. these considerations have been the basis of the generalized baz model mentioned in section 1 constructed from the 1965 zhurkov‟s [47] solid-state physics model, which is a generalization of the 1889 arrhenius‟ [48] chemical kinetics model, which is, in its turn, a generalization of the 1886 boltzmann‟s (“boltzmann statistics”) [49] model in the kinetic theory of gases. the paradigm of the transition state theory (tst) developed by e. wigner in 1934 [50] and by m. evans, m. polanyi in 1938 [51] is viewed as the equivalent approach we apply to the concept of a unified semiconductor reliability model. the arrhenius equation relates reaction rate r of transition from a reactant in state a to a product in state b is depending on temperature and the activation energy as also modeled by transition state theory. the probability that the particular energy level u is exceeded has been expressed in boltzmann‟s theory of gases: microelectronic reliability models for more than moore nanotechnology products 11 ( ) (6) and a total distribution is found to be: ∫ ( ) (7) this function defines the probability p that the energy of a defect exceeds the activation energy can be assessed as a function of the ratio of time constant 0 to lifetime equal to: ( ) (8) figures 3.a show a schematic drawing of the principle of the transition state theory which represents the amount of free energy δgǂ required to allow a chemical reaction to occur from an initial state to a final state. if the chemical reaction is accelerated by a catalyst effect the height of energy δgǂ is reduced allowing the transition initial state → final state to occur with a transition state energy being a lower value of the energy barrier to cross. in transition state theory with catalyst effect it is possible to get an effective activation energy being negative (shown in figure 3.b), as observed for example for hci failure mechanism. it is observed that hot carrier injection induced effects are exaggerated at lower temperatures demonstrating clear negative effective activation energies. fig. 3.a transition state theory principle diagram fig. 3.b with catalyst effect with negative ea and for hci failure mechanism. the boltzmann-arrhenius-zhurkov (baz) model [8] determines the lifetime  for a material or a device experiencing combined action of an elevated temperature and external stress: ( ) (9) where s is the applied stress (can be any stimulus or a group of stimuli, such a voltage, current, signal input, etc), t is the absolute temperature, γ is a factor of loading characterizing the role of the level of stress (the product γ · s is the stress per unit volume and is measured in the same units as the activation energy ea), and k the boltzmann's constant (1.3807 10 −23 j/k or 8.6174 10 −5 ev/k). the generalized baz model proceeds from the rationale that the process of damages is temperature dependent, but is due primarily to the accumulation of damages resulting 12 a. bensoussan from loading above the threshold stress level. each level of stress is characterized by the corresponding term ·s normalized by the term k ·t, thereby defining the relationship between the elevated temperature and the energy contained in an elementary volume of the material or the active zone of a device. in a recent papers e. suhir et al. presented [52] [53] the substance of the multiparametric baz model considering the lifetime  in the baz model be viewed as the mttf. the failure rate for a system is given by the baz equation can be found as: ( ) (10) assuming the probability of non-failure at the moment t of time is (11) this formula is known as exponential formula of reliability. if the probability of failure p is established for the given time t in operation, then the exponential formula of reliability can be used to determine the acceptable failure rate. such an assumption suggests that the mttf corresponds to the moment of time when the entropy of this law reaches its maximum value. using the famous expression due to gibbs for the entropy which was later used by shannon to define information [54] from the formula: (12) we obtain that the maximum value of the entropy h(p) is equal to e -1 = 0.3679. with this probability of non-failure, the formula (9) yields: ( ) (13) comparing this result with the arrhenius equation (1), suhir concludes that the t50% or mttf expressed by this equation corresponds to the moment of time when the entropy of the time-depending process p=p(t) is the largest. let us elaborate on the substance of the multi-parametric baz model using an example of a situation when the product of interest is subjected to the combined action of multiple stressors si (electrical stress as for example dc biasing current, voltage, power dissipation or dynamic input signal). let us assume that the wearout failure rate wf(t) of an electronic product, which characterizes the degree of propensity of a material or a device to failure, is determined during testing or operation by the relative drift of an electrical predictor parameter p as the electrical signature of the failure mode of concern [55] and considering equation (10), one could seek the probability of the material or the device non-failure in the form: [ ( ) ( ∑ )] (14) where p0 is the value of the predictor parameter at time = 0 and , i values reflect respectively the sensitivities of the device to the corresponding predictor and stressors. the model can be easily made multi-parametric, i.e. generalized for as many stimuli as necessary [55]. the sensitivity factors must be determined experimentally. because of that, the structure of the multi-parametric baz expressed by the equation (14) should not be interpreted as a superposition of the effects of different stressors, but rather as a convenient and physically meaningful representation of the foat data. microelectronic reliability models for more than moore nanotechnology products 13 in such condition the suggested approach is to determine the  factors reflecting the sensitivities of the device to the corresponding stimuli (stressors). this will be detailed when considering the baz model derived from the transition state theory in the following section related to multiple dimensional reliability model. one‟s note the equation (14) can be viewed as a cox proportional hazards model [9]. survival models consist of two parts: the underlying hazard function, denoted 0(t), describing how the risk of event per time unit changes over time at baseline levels of covariates; and the effect parameters, describing how the hazard varies in response to explanatory covariates. the hazard function for the cox proportional hazard model has the form: ( ) (15) this expression gives the hazard rate at time t for subject i with covariate vector (explanatory variables) xi. saying this, one limitation of the cox model is observed on reliability analysis method: for a sound part at time t, the failure probability during time [t, t+dt] is related to stress applied during this period of time dt but not taking into account history of stresses applied before t. this may be a limitation when modeling nonconstant stress applied during time (e.g. step stress test for example). the proportional hazards (ph cox) model can be generalized (gph) by assuming that at any moment the ratio of hazard rates is depending not only on values of covariates but also on resources used until this moment. the application of the pdfr concept and particularly the multi-parametric baz model enables one to improve dramatically the state of the art in the field of the microelectronic products reliability prediction and assurance. 4. multi-dimensional reliability models as seen in section 1 and 2, existing quality standards are considering stress tests and related pof mechanisms without entanglements. device failure rates are seen to be a sum of each existing failure rate taken individually. bathtub curve is an idealized view of instantaneous failure rate scenario generally considered in well-known mil, jedec or telcordia standards. the multidimensional variable addressed by boltzmann-arrhenius-zhurkov (baz) reliability model and the multi mechanism model htol (high temperature operating lifetest) proposed by j. bernstein are discussed now with the intend to generalize how their implementation can be suitable for an easy to use, to quantify and to predict probability of failure of new products and technologies. 4.1. multiple stressors and predictors the baseline of the model deals with concept issued from the transition state theory and the healthiness of a population of device must grow and change with time and stresses applied. the first concept is that a device or a homogeneous lot of item constituted of population of “identical” device must fail after an observed time due to aging either under operation or under storage conditions. the statistics of this behavior has to do with entropy evolution of such item of population. the transformation from a sound item to a failure is similar to what is described in the transition state theory considering similarly a system of products to combine in a new system of product when energy is provided to the system. 14 a. bensoussan stressor definition and normalization in a similar way considering a population of devices submitted to heating will only degrade continuously up to malfunction and failure. but when superposing high (or low) temperature and adequate stressors, the time-to-failure of such alike population will reduce. the term “stressors” here is defined as the electrical factors applied to the device of concern. stressors are all limited by technology boundaries defined by the burnout values of each related electrical parameter (breakdown voltage, current overstress and burnout, power burnout, input signal overstress). these stressors can be normalized with respect to their burnout limits and strains are pondered as percentage of breakdown limits. the main hypotheses, verified by experiments on electronic devices and population of similar devices, are: i. the physical instantaneous degradation phenomena due to electrical stress above the limits is observed at any temperature and depend of the active zone temperature of the device under test (sze, s. m [56]) ii. the relative drift of a predictor parameter is a function of time (for example square root for diffusion mechanisms) and relate to a failure mechanism activated by temperature and biasing. iii. for a biasing set higher and close to the breakdown limit, the two failure mechanisms (e.g. the diffusion and the instantaneous catastrophic ones) are in competition and occurred simultaneously; for sake of simplicity it is assumed they are progressively and linearly combined from a pure diffusion mechanism at nominal biasing to a pure burnout at high bias (voltage or current of power dissipation). this last hypothesis is the foundation of the baz model, as the stressor is seen like a catalyst effect able to modify the height of the barrier of the pure temperature failure mechanism (arrhenius thermally activated) and to quantify the effect of biasing on the barrier properties. the predictor parameters is then the sensitive tool we can use to measure this barrier height under various temperature and bias conditions. for unit homogeneity, the stressor is multiplied by a constant factor to be determined by experiments and the term · s is in ev unit. indeed the  coefficients can be easily determined because of hypothesis iii) above and as shown on figure 3, the apparent height of the barrier is reduced to zero and we can verify: (16) e.g. when the bias is high enough to reach the instantaneous catastrophic failure. this major principle is called failure equivalence (fe) principle. because ea (pure thermal effect) is assumed to be a constant and considering the burnout limit is temperature dependent potentially distributed (gaussian distribution), the  factor should also reflect temperature dependence and have a same gaussian like distribution. the present paper will not consider this extension and the  factor is supposed to be a constant on a first basis. predictor definition as mentioned previously, an electrical predictor parameter p is defined as the electrical signature (failure mode) of a failure mechanism of interest. such a parameter is normalized with respect to its initial value at time zero. similarly to the stressor context, we can define an equivalent energy using a prefactor  as outlined in equation (14). microelectronic reliability models for more than moore nanotechnology products 15 figure 4 is a schematic drawing showing how the fe principle applied and how predictors and stressors takes place in the baz model highlighted by the transition state theory. all vertical axes are transformed in energy unit. fig. 4 predictor p and stressor s for baz model and transition state theory the predictor relative drift shown is an example of actual measurements performed on microwave transistors when submitted to steady state aging testing [57]. the predictor of each single device is normalized with respect to its initial measurement (mean value) and the failure criteria was 20% drift reached. so, the drawing is set in order to consider failed devices for all drift greater than 20%. 4.2. baz model simplification and applicability it is observed from section ii, the baz model is a generalization of existing well known arrhenius equation modified by commonly accepted industrial models as eyring for example. as presented in ref [29], all failure mechanisms models as detailed in jedec jep122 can be rearranged in the following form ( ) (17) where the function g(s) are a function of stressor parameter always expressed in two ways generalized expressions: [ ] (18.a) or (18.b) where m and p = 1 or -1 is a power law factor. applying the normalization process for each stressor si with respect to its burnout limit parameters or electrical parameter limits, we set: (19.a) ( ) ( ) (19.a) 16 a. bensoussan from these equations, it is assumed the xi and xj are varying from 0 when no electrical stress is applied to 1 when maximum electrical stress induces an instantaneous failure at any given temperature. the value of stressor burnout is considered in a first approximation not temperature dependent. this can be reformulated when the model will be refined to take into account this statement. merging equations (17 to19), it is easy to express the general equation of failure rate as: ( ) (20) with the effective activation energy in the form [13]: ( ∑ [ ( )] ) (21) expression 21 is based on the assumption that the stressors are temperature independent and are applied simultaneously, so simply added because of a linear approximation point of view. the stressors are considered independent and they aggregate each other up to a value which compensate exactly the “pure” arrhenius activation energy leading to an instantaneous burnout (see figure 3.a for clarification): consequently the principle of superposition cannot be invoked in this case, rather it is a principle of aggregation and compensation. the stressors defined above are considered through literature experiments and accumulated data. of course any other type of stressor can be easily introduced in lieu of or together with the listed stressors providing they are relevant in the considered model. this proposed reliability methodology is agile and consists of measuring the burnout or breakdown true limits (including lot dispersion values mean and standard deviation) or some physical limit as for hci in order to normalize new stress parameter with respect to its limit and to include it in the equation 13. 4.3. multiple failure mechanisms (m-tol) the key novelty of the multiple-temperature operational life (m-tol) testing method proposed by j. bernstein [58], is its success in separating different failure mechanisms in devices in such a way that actual reliability predictions can be made for any user defined operating conditions. this is opposed to the common approach for assessing device reliability today is the high temperature operating life (htol) testing [59], which is based on the assumption that just one dominant failure mechanism is acting on the device [31]. however, it is known that multiple failure mechanisms act on the device simultaneously [25]. the new approach m-tol method predicts the reliability of electronic components by combining the failure in time (fit) of multiple failure mechanisms [60]. degradation curves are generated for the components exposed to accelerate testing at several different temperatures and core stress voltage. data clearly reveals that different failure mechanisms act on the components in different regimes of operation causing different mechanisms to dominate depending on the stress and the particular technology. a linear matrix solution, as presented in [60], allows the failure rate of each separate mechanism to be combined linearly to calculate the actual reliability as measured in fit of the system based on the physics of degradation at specific operating conditions. an experimental results of the m-tol method tested on both 45 and 28 nm fpga devices from xilinx that were processed at tsmc (according to the xilinx data sheets) is running in the frame of a project granted by research institute of technology named irt saint exupery, toulouse (france). the fpgas are tested over a range of voltages, microelectronic reliability models for more than moore nanotechnology products 17 temperature and frequencies, and the test program is conducted by j. bernstein, ariel university, ariel (israel). ring frequencies of multiple asynchronous ring oscillators simultaneously during stress in a single fpga were read and recorded. hundreds of oscillators and the corresponding frequency counters were burned into a single fpga to allow monitoring of statistical information in real time. since the frequency itself monitors the device degradation, there is no recovery effect whatsoever, giving a true measure for the effects of all the failure mechanisms measured in real time. the common intrinsic failure mechanisms affecting electronic devices are, hot carrier injection (hci), bias temperature instability (bti), electromigration (em) and time dependent dielectric breakdown (tddb). tddb will not be discussed in this paper since it was never observed in our test results. the standard models for failure mechanisms in semiconductor devices are classified by jedec solid state technology association and listed in publication jep-122g. the failure mechanisms can be separated due to the difference of physical nature of each individual mechanism. the theory of using fpgas as the evaluation vehicle for our m-tol verification utilizes the fact that this chip is built with the basic cmos standard cells that would be found in any digital process using the same technology. the system runs hundreds of internal oscillators at several different frequencies asynchronously, allowing independent measurements across the chip and the separation of current versus voltage induced degradation effects. when degradation occurred in the fpga, a decrease in performance and frequency of the ro could be observed and attributed to either increase in resistance or change in threshold voltage for the transistors. the test conditions were predefined for allowing separation and characterization of the relative contributions of the various failure mechanisms by controlling voltage, temperature and frequency. extreme core voltages and environmental temperatures, beyond the specifications, were imposed to cause failure acceleration of individual mechanisms to dominate others at each condition, e.g. sub-zero temperatures, at very high operating voltages, to exaggerate hci. the acceleration conditions for each failure mechanism allowed us to examine the specific effect of voltage and temperature versus frequency on that particular mechanism at the system level, and thus define its unique physical characteristics even from a finished product. finally, after completing the tests, some of the experiments with different frequency, voltage and temperature conditions were chosen to construct the m-tol matrix. the results of our experiments give both ea and  for the three mechanisms we studied at temperatures ranging from -50 to 150°c. the eyring model [36] is utilized here to describe the failure in time (fit) for all of the failure mechanisms. the specific ttf of each failure mechanisms follows these formulae: (22) (23) (24) correct activation energy simultaneously with corresponding voltage factor were determined. the procedure was followed for all three mechanisms for the 45nm as well as the 28nm devices. the ea and  for hci found in 45nm are summarized in table 1. 18 a. bensoussan table 1 summary of ea and  for fpga 45 nm. ea (ev)  hci -0.37 22.7 bti 0.52 3.8 v 1 em 1.24 3.8 as presented by regis, d. et al. [61], the impact of scaling on the reliability of integrated circuits is the actual concern. it is particularly necessary to focus on three basics of safety analyses for aeronautical systems: failure rates, lifetimes and atmospheric radiations' susceptibility. the deep sub-micron technologies, in terms of robustness and reliability, need to be modeled because the increase in failure rate, reduction in useful life and increased vulnerability to high energy particles are the most critical concerns in terms of safety. when considering the well documented failure mechanisms related to the die only, they can be defined in two families, one for those related to what is call front end of line (feol) meaning at transistor level and those occurring in the back end of line (beol) mainly metallization. as illustrated on figure 5 (extracted from paper [61]), ics are affected by different degradation mechanisms during their useful life. these degradation mechanisms can shift the properties of electronic devices and thereby affect the circuit performance. due to the exponential nature of acceleration factor (referring to equations 22 to 24) as function of voltage, frequency (equivalent to current) or temperature, it is mandatory to consider at least 3 mechanisms, each of them in competition and accelerated. fig. 5 wear-out phenomena localization (65 nm ic cross section) (from [61]). the paper proposed by j. bernstein [12] is offering a new reliability point of view and is synthetized hereunder. the proposed m-tol approach is defined with multiple failure mechanism in competition and on the assumption of non-equal failure probability at-use conditions to describe and to determine the correct proportionality. the basic method for solving the system of equations is described in another paper from j. bernstein [62], and using the suggestion of a sum-of-failure-rate method as described in jedec standard jep122g. it is clear that the manufacturers of electronic components recognize the importance of combining failure mechanisms in a sum-of-failure-rates method. each mechanism „competes‟ with the others to cause an eventual failure. when more than one mechanism exists in a system, then the relative acceleration of each one must be defined microelectronic reliability models for more than moore nanotechnology products 19 and averaged under the applied condition. every potential failure mechanism should be identified and its unique af should then be calculated for each mechanism at given temperature and voltage so the fit rate can be approximated for each mechanism separately. then, the final fit is the sum of the failure rates per mechanism, as described by: (25) where each mechanism leads to an expected failure unit per mechanism, fiti. thus, we describe here, the prediction of a system reliability using a linear matrix solution. although until today, we have only verified the methodology on verifiable microelectronic device failure mechanism, the methodology will apply directly to additional mechanisms including thermal and mechanical stresses due to wafer bonding and any failure mechanism that can be modelled by physics of failure, including wide bandgap semiconductors and even packaging failures whereas each intrinsic mechanism is known to have different statistical distributions, the combination of distributions becomes, at the ensemble level, approximately constant rate as demonstrated by r.f. drenick [63]. in its theorem, drenick suggests and justifies the summation of failure rate approach also as explained in the jedec handbook. the mechanism matrix is described in table 2. each row of the matrix describes various operating conditions under which the system is tested. each experiment, i, is operated with its unique voltage, frequency and temperature. the „„results‟‟ column, fiti is the average time when the failure occurs under the experimental condition, which is associated with a pre-determined failure point. the example studied uses 10% performance degradation as the failure point, however any reasonable value will work as long as it is consistent with the application. the result fiti is a failure rate () and measured as 10 9 /mttf. table 2 m-tol matrix used to solve models with measured times to fail [12] hci bti em results v1, f1, t1 x·a1 y·b1 z·c1 fit1 v2, f2, t2 x·a2 y·b2 z·c2 fit2 v3, f3, t3 x·a3 y·b3 z·c3 fit3 we assume that each mechanism (a–c) affects the system linearly with its own acceleration factor (af) for a given frequency. the acceleration factor formulas are in table 3. each equation is calculated with the experimental condition of each result on the right hand side. table 3 the equations for the acceleration factors matrix [12] hot carrier injection ai  afhci = ( ) ( ) negative bias temperature instability bi  afnbti = ( ) ( ) electromigration ci  afem = ( ) ( ) 20 a. bensoussan then the matrix is solved to find a set of constants, pi, shown here as x–z, across the whole matrix that matches the experimental results with calculated acceleration factors. this linear matrix is solved by multiplying the inverse matrix, af -1 , with lambda at each condition, as shown in table 4. the solution give the coefficients (x–z), which make up the relative contribution of each failure mechanism on the system. table 4 matrix solution [12]. af pi  [ ] [ ] [ ] (af) · (pi) = ()  (pi) = (af) -1 · () knowledge of these coefficients, allows prediction of the mttf or the fit for any other work conditions that were not tested and give an accurate prediction of the reliability of the device under different conditions. this matrix has been used then to construct the full reliability profile whereby fit is calculated versus temperature for several conditions for fpga 45 nm process, as shown in figure 6. the 45 nm technology shows frequency related effects at both low temperatures (below 5°c) due to hci and at high temperatures. it is observed the high voltage bias (@ 1.2 v) enhance the effect of frequency which reduce the overall hci contribution at low frequency. the dominant failure mechanism at medium ambient temperature (range from 10°c to 150°c) is related to nbti while em failure mechanism is rather observed at high temperature. fig. 6 reliability curves for 45nm technology showing fit versus temperature for voltages above and below nominal (1.2v) and frequencies from 10 mhz (dashed line) to 2ghz (solid line). 0,01 0,1 1 10 100 1000 10000 100000 1000000 10000000 -50 0 50 100 150 fi t temperature t (°c) v = 0,8 v ; f = 1,0 ghz v = 1,0 v ; f = 1,5 ghz v = 1,2 v ; f = 2,0 ghz v = 0,8 v ; f = 0,01 ghz v = 1,0 v ; f = 0,01 ghz v = 1,2 v ; f = 0,01 ghz hci bti em microelectronic reliability models for more than moore nanotechnology products 21 how to disentangle reliability models for more than moore microelectronics based on nanotechnologies? an innovative and practical way is to use the various physics of failure equations together with accelerated testing for reliability prediction of devices exhibiting multiple failure mechanisms. we presented an integrated accelerating and measuring platform to be implemented inside fpga chips, making the m-tol testing methodology more accurate, allowing these tests at the chip and at the system level, rather than only at the transistor level. the calibration of physics models with highly accelerated testing of complete commercial devices allows to perform physical reliability prediction. the m-tol matrix can provide information about the proportional effect of each failure mechanism in competition and offering an easy and simply tool to extrapolate the expected reliability of the device under various conditions. this practical platform can be implemented on almost any fpga device and technology to enable making fit calculations and reliability predictions. the results of this approach provide the basis for improvements in performance and reliability given any design or application. this method can be extended to other processes and new technologies, and can include more failure mechanisms, thus producing a more complete view of the system's reliability. the baz model together with the m-tol methodology has been combined in a general multi-dimensional tool named m-storm (multi-physics multi-stressors predictive reliability model) [13] which can be implemented in a concrete situation existing for the deep-submicron process devices but also for any other microelectronic disruptive technology. 5. conclusion to this day, the users of our most sophisticated electronic systems that include optoelectronic, photonic, mems device, gan power devices, asic and deep-sub-micron technologies etc. are expected to rely on a simple reliability value (fit) published by the supplier. the fit is determined today in the product qualification process by use of htol or other standardized test, depending on the product. the manufacturer reports a zero-failure result from the given conditions of the single-point test and uses a single-mechanism model to fit an expected mttf at the operator‟s use conditions. the zero-failure qualification is well known as a very expensive exercise that provides nearly no useful information. as a result, designers often rely on halt testing and on handbooks such as fides, telcordia or mil-hdbk-217 to estimate the failure rate of their products, knowing full well that these approaches act as guidelines rather than as a reliable prediction tool. furthermore, with zero failure required for the “pass” criterion as well as the poor correlation of expensive htol data to test and field failures, there is no communication for the designers to utilize this knowledge in order to build in reliability or to trade it off with performance. prediction is not really the goal of these tests; however, current practice is to assign an expected failure rate, fit, based only on this test even if the presumed acceleration factor is not correct. we presented, in this paper, a simple way to predictive reliability assessment using the common language of failure in time or failure unit (fit). we evaluated the goal of finding mtbf and evaluate the wisdom of various approaches to reliability prediction. our goal is to predict reliability based on the system environment including space, military and 22 a. bensoussan commercial. it is our intent to show that the era of confidence in reliability prediction has arrived and that we can make reasonable reliability predictions from qualification testing at the system level. our research will demonstrate the utilization of physics of failure models in conjunction with qualification testing using our multiple – temperature operating life (m-tol) matrix solution to make cost-effective reliability predictions that are meaningful and based on the system operating conditions. the baz model together with the m-tol methodology has been combined in a general multi-dimensional tool named m-storm (multi-physics multi-stressors predictive reliability model) applicable to microelectronic disruptive technologies. acknowledgement: the paper is a part of the research done at irt saint exupery, toulouse, france. the study was conducted in the frame of electronic robustness contract project irt-008 sponsored by the following funding partners: agence nationale de la recherche, airbus operations sas, airbus group innovation, continental automotive france, thales alenia space france, thales avionics, laboratoire d'analyse et d'architecture des systèmes — centre national de la recherche scientifique (laas-cnrs), safran labinal power systems, bordeaux university, institut national polytechnique bordeaux (ims — umr 5218), and hirex engineering. i would like to particularly thank professor joseph b. bernstein, from ariel university, ariel (israël) for the major comments and deep discussions we had during the manuscript preparation. references [1] dod, "mil-hdbk-217, military handbook for reliability prediction of electronic equipement," washington, dc, usa, 1991, december. [2] european space comp. information exchanges systems, "ecss-q-st-60c rev2 space product assurance, electrical, electronic and electromecanical (eee) components.," ecss secretariat-esa-estec-component, material and processes related ecss and esa pss standards; requirements & standards divisionnoordwijk, the netherlands, 21 october 2013. [online]. available: https://escies.org. [accessed april 2016]. [3] standard, "jedec jep-122g failure mechanisms and models for semiconductor devices," jedec solid state technology association, arlington, 2011. [4] m. pecht, "a prognostics and health management roadmap for information and electronics-rich systems," ieice fundamentals review, vol. 3, no. 4, p. 25, 2010. [5] p. lall, r. lowe and k. goebel, "prognostic health monitoring for a micro-coil spring interconnect subjected to drop impacts," in proc. of the 2013 ieee conference on prognostics and health management (phm), 2013. [6] l. boltzmann, "further investigations on the thermal equilibrium of gas molecules," in proceeding of the imperial academy of science, vienna, vol. ii, no. 76, p. 428, 1872. [7] e. suhir, "probabilistic design for reliability," chipscale rev., vol. 14, no. 6, 2010. [8] e. suhir, "predicted reliability of aerospace electronics: application of two advanced concepts," in proc. of the ieee aerospace conference, 2-9 march 2013. [9] d. cox, "regression models and life-tables," journal of the royal statistical society. series b (methodological), vol. 34, no. 2. (1972), pp., vol. 34, no. 2, pp. 187-220, 1972. [10] j. w. mcpherson, reliability physics and engineering time-to-failure modeling; 2nd edition, plano (tx) usa: springer , 2013. [11] m. white and j. b. bernstein, "microelectronics reliability: physics-of-failure based modeling and lifetime evaluation," jpl publication 08-5, jet propulsion laboratory/california institute of technology, february 2008. [12] j. b. bernstein, m. gabbay and o. delly, "reliability matrix solution to multiple mechanism prediction," microelectronics reliability journal, vol. 54, pp. 2951-2955, 2014. microelectronic reliability models for more than moore nanotechnology products 23 [13] a. bensoussan, "m-storm: multi-physics multi-stressors predictive reliability model," microelectronic reliability journal, 2016 (to be published). [14] n. t. n. esa-estec secretariat, "ecss-q-st-30-11c : space product assurance derating-eee components, rev 1, october 4th 2011," [online]. [15] esa-estec, ecss-q-st-70-08c, space product assurance manual soldering of high-reliability electrical connections, noordwijk, the netherlands. [16] esa-estec secretariat, noordwijk, the netherlands, "ecss-q-st-60-13c: “commercial electrical, electronic and electromechanical (eee) components”," 21 october 2013. [online]. available: www.ecss.nl. [accessed 2016]. [17] klinger, d.j., yoshinao nakada and m. a. mendez, at&t reliability manual, van nostrand reinhold, 1990. [18] fides_guide, "reliability methodology for electronic systems, dga," 2004. [19] "rdf 2000 (ute c 80-810, iec-62380-tr ed.1)," [online]. available: http://www.ute-fr.com/lanormalisation/ute-and-standardisation. [20] siemens ag, sn29500, reliability and quality specifications failure rates of components, siemens technical liaison and standardisation, 1986. [21] bellcore, sr-332, reliability prediction procedure for electronic equipment, bellcore telcordia, 2011. [22] d. nicholls, "what is 217plus (tm) and where did it come from?," in proc. of the annual reliability and maintainability symposium , orlando, fl, 2007. [23] "prism now 217plus (tm) riac the reliability analysis center," [online]. available: http://www.theriac.org . [24] jep148b, "reliability qualification of semiconductor devices based on physics of failure risk and opportunity assessment," jedec solid state technology association, arlington, va, december 2004. [25] j. b. bernstein, s. salemi, l. yang, j. dai and j. qin, physics-of-failure based handbook of microelectronic systems, utica, ny: reliability information analysis center, 2008. [26] e. suhir, applied probability for engineers and scientists, new york: mcgraw-hill, 1997. [27] p. a. tobias and d. c. trindade, applied reliability (3rd ed.), boca raton, fl: crc press, 2012. [28] p. lall, m. pecht and e. b. hakim, influence of temperature on microelectronics and system reliability, boca raton, ny: crc press, 1997. [29] a. bensoussan and e. suhir, "design-for-reliability (dfr) of aerospace electronics: attributes and challenges," ieee aerospace conf., 2-9 march 2013. [30] a. bensoussan, "how to quantify and predict long term multiple stress operation: application to normally-off power gan transistor technologies," microelectronics reliability journal, special issue on reliability in power electronics, vol. 58, pp. 103-112, march 2016. [31] j. b. bernstein, reliability prediction from burn-in data fit to reliability models, london: elsevier ap, 2014. [32] j. black, "electromigration a brief survey and some recent results," ieee, trans. electron devices, vols. ed-16, p. 388, 1969. [33] m. yoder, "ohmic contacts in gaas," solid state el., vol. 23, pp. 117-119, 1980. [34] c. lee, b. welch and w. fleming, "reliability of auge/pt and auge/ni ohmic contacts on gaas," electronics letters, vol. 17, pp. 407-408, 1981. [35] h. cui, "h. cui, “accelerated temperature cycle test and coffin-manson model for electric packaging," ieee trans. rams, pp. 556-560, 2005. [36] h. eyring, s. lin and s. lin, basic chemical kinetics, new york chichester brisbane toronto: john willey & sons, 1980. [37] d. peck, "comprehensive model for humidity testing correlation," in proc. of the ieee 23rd international reliability physics symp. (irps), anahiem, 1986. [38] i. chen, s. holland and c. hu, "a quantitative physical model for time-dependent breakdown in sio2," in proc. of the ieee 23rd international reliability physics symp. (irps), orlando, 1985. 24 a. bensoussan [39] m. dai, c. gao, k. yap, y. shan, z. cao, k. liao, l. wang, b. cheng and s. liu, "a model with temperature-dependent exponent for hot-carrier injection in high-voltage nmosfets involving hot-hole injection and dispersion," ieee trans. electron devices, vol. 55, pp. 1255-1258, 2008. [40] e. takeda, y. nakagome, h. kume and s. asai, "new hot-carrier injection and device degradation in submicron mosfet‟s," iee proc, vol. 130, no. 3, pp. 144-149, 1983. [41] e. takeda, h. kume, t. toyabe and s. asai, "submicron mosfet structure for minimizing channel hotelectron injection," in proc. of the symposium on vlsi tech., 1981. [42] k. decker, "gaas mmic hydrogen degradation study," in gaas reliability workshop, philadelphia, pa, usa, 1994. [43] m. delaney, t. wiltsey, m. chiang and k. yu, "reliability of 0.25μm gaas mesfet mmic process: results of accelerated lifetests and hydrogen exposure," in gaas reliability workshop, philadelphia, pa, usa, 1994. [44] m. ciappa, f. carbognani and w. fichtner, "lifetime modeling of thermomechanics-related failure mechanisms in high power igbt modules for traction applications," in proc. of the ieee 15th int. symp. power semicond. devices ics, pp. 295-298, 2003. [45] d. schroder and j. babcock, "negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing," journal of applied physics, vol. 94, no. 1, pp. 1-18, 2003. [46] e. suhir, "statistics-related and reliability-physics-related failure processes in electronics devices and products," modern physics letters b, vol. 28, no. 13, 2014. [47] s. zhurkov, "kinetic concept of the strength of solids," int. j. of fracture mechanics, vol. 1, no. 4, 1965. [48] s. arrhenius, "ueber den einfluss des atmosphärischen kohlensäurengehalts auf die temperatur der erdoberfläche," in proceedings of the royal swedish academy of science, vol. 22, no. 1, 1896. [49] l. boltzmann, "the second law of thermodynamics. populare schriften," in essay 3, address to a formal meeting of the imperial academy of science,, 1886. [50] e. wigner, "the transition state method," faraday society (london) trans, vol. 34, pp. 29-41, 1938. [51] m. evans and m. polanyi, "inertia and driving force of chemical reaction," faraday society (london) trans, vol. 34, pp. 11-29, 1938. [52] e. suhir, a. bensoussan, g. khatibi and j. nicolics, "probabilistic design for reliability in electronics and photonics: role, significance, attributes, challenges.," in proc. of the international reliability physics symposium, monterey, ca, 2015. [53] e. suhir, r. mahajan, a. lucero and l. bechou, "probabilistic design-for-reliability concept and novel approach to qualification testing of aerospace electronic products," in aerospace conf., 2012 ieee, big sky, mt, march 2012. [54] c. shannon, "a mathematical theory of communication," bell system technical journal 27 (3): 379– 423, vol. 27, no. 3, pp. 379-423, 1948. [55] e. suhir and a. bensoussan, "quantified reliability of aerospace optoelectronics," in sae international j. aerosp. 7(1), cincinnati, 2014. [56] s. sze, physics of semiconductor devices, new york: john wiley and sons, 1981. [57] a. bensoussan, p. coval, w. roesch and t. rubalcava, "reliability of a gaas mmic process based on 0.5µm au/pd/ti gate mesfets," in proc. of the 32nd annual proceeding reliability physics, irps, san jose (ca), april 1994. [58] j. bernstein, a. bensoussan and e. bender, "reliability prediction with mtol," to be published in microelectronics reliability journal, elsevier, 2016. [59] xilinx, "reliability report," xilinx ug116 (v10.4), 1st april 2016. [60] j. bernstein, "reliability prediction for aerospace electronics," in proc. of the ieee aerospace conference, big sky (mn), 2015. [61] d. regis, j. berthon and m. gatti, "dsm reliability concerns impact on safety assessment," in sae 2014 aerospace systems and technology conference,, cincinnati, oh, september 2014. [62] j. bernstein, m. gurfinkel, x. li, j. walters and y. shapira, "electronic circuit reliability modeling," microelectronics reliability j., vol. 46, pp. 1957-1979, 2006. microelectronic reliability models for more than moore nanotechnology products 25 [63] r. drenick, "mathematical aspects of the reliability problem," journal of the society for industrial and applied mathematics, vol. 8, no. 1, pp. 125-149, 1960. [64] b. agarwala and al., "dependence of electromigration-induced failure time on length and width of aluminium thin-film conductors," j. appl. phys., vol. 41, p. 3954, 1970. [65] n. 1. r. hdbk, "nswc-10 reliability hdbk jan2010 45818/," 2010. [online]. available: http://everyspec.com/usn/nswc/nswc-10_reliability_hdbk_jan2010_45818/. [accessed 2016]. [66] j. evans, p. lall and r. bauernschub, "a framework for reliability modeling of electronics," in proc. of the reliability and maintenability symposium, 1995. instruction facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 219 231 doi: 10.2298/fuee1602219s wave digital models of ideal and real transformers  biljana p. stošić university of niš, faculty of electronic engineering, niš, serbia abstract. in this paper, the wave digital filter (wdf) theory is applied for development of the wave digital models of ideal and real transformers which can be used for modeling of more complex structures. the transformers wave digital networks are described and developed here based on scattering variables and two-port and three-port networks of parallel and series adaptors. wdf-based model of a real transformer includes parasitic resistors and inductors, which are usual in low-frequency transformer equivalent circuit. key words: wave digital approach, ideal transformer, real transformer, series/parallel adaptors, network synthesis 1. introduction the basic theory of wave digital filters (wdf) was developed by alfred fettweis [13] in the early 70’s. it was used for digitizing lumped electrical circuits composed of inductors, capacitors, resistors, and other elements of classical network theory. wave digital filters offer computational efficiency, stability under finite-arithmetic conditions and facilitate interfacing with wave variables, making them a worthwhile subject of study. the wave digital structures are specially tailored with respect to hardware implementation. in the past, wave digital filter concept has been widely used in time-discrete wavebased modeling and analysis of different physical systems. a detailed review of application of wdf structures for electromagnetic (em) field simulation is given in [4-6]. the original intent of the author is to develop a self-written tool in matlab based on wdf theory for microstrip circuit simulation in digital domain. the only practical constraint is that the complex structure under study needs to have an analogous equivalent circuit representation. as stated in [7, 8], a mixed wave-digital/full-wave em method combining the accuracy of em modeling with the convenience of using wave digital approach can be very efficiently used to develop wdf-based network models and to get the scattering parameters of different two-port microstrip structures. the effects of discontinuity are more accurately modeled and taken into account with a full-wave em simulation. received february 23, 2015; received in revised form june 30, 2015 corresponding author: biljana p. stošić university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: biljana.stosic@elfak.ni.ac.rs) 220 b. p. stošić compact network models can facilitate the solution of em field problems such as microwave structures. recently, a systematic method for the automated extraction of lumped-element equivalent circuits for multiport microwave circuits has been presented [9]. a circuit model is extracted directly from the em simulation or measurements. the proposed multiport-foster synthesis method generates network topology with lumped elements and connection subnetworks based on ideal transformers. network-oriented modeling can also be applied to complex em radiating structures using the segmentation technique and dividing structure into subregions. the lumpedelement circuit models can be established by representing subdomains by foster equivalent circuits, their connection by interconnection elements exhibiting only ideal transformers and the radiation modes by cauer equivalent circuits. some examples are shown in [10, 11]. this type of connection subnetworks based on ideal transformers can also be used for hybridization of the tlm method with other numerical methods [10, 11]. as it is mentioned earlier, the author of the paper intents to develop a software tool that can be applied to simulate microwave structures of different geometries by using their developed wave digital network models. so, in order to digitize equivalent network circuits with incorporated ideal transformers represented in [9-11] by using wdf theory, wdf-based models of an ideal transformer are developed in the first part of this paper. in wave digital structures adaptors are used as the connection elements. a. fettweis has introduced elementary two-port parallel and series adaptors representing parallel and series connections of two-ports [1-3, 12]). the ideal transformer is an important component in the building of complex microwave systems and its proper modeling using the methods of the wdfs is very important. in this paper, at first the abcd and the scattering matrices parameters of the ideal transformer are introduced and interconnected, and then the results are applied to develop wdf-based models, using only two-port series or parallel wave digital adaptors and some additional multipliers. the correctness of these models is verified through a simple proof. contrary to an ideal transformer, a real transformer has winding resistance, flux leakage, finite permeability and core losses. wdf-based model of transformer t-equivalent circuit [13, 14] which has been successfully used in steady-state studies and some low-frequency transient studies is developed here in the second part of the paper. 2. the scattering variable formalism the introduction of the wave variables is the key element of the wave digital approach. the correspondence between wave digital circuit and the related analog circuit is based on scattering variables, not on voltages and currents. the relevant signal quantities used in wdf representation are the so-called incident a and reflected b waves, which are defined with respect to each port of the reference network as shown in fig. 1. synthesis of wave digital network of an ideal transformer can be done by starting from its abcd parameters and their transformation into scattering parameters. for a two-port network characterized by a current and a voltage at each port (fig. 1), abcd matrix formulation is 1 2 1 2 u ua b i ic d                 , (1) and scattering matrix formulation is wave digital models of ideal and real transformers 221 1 11 12 1 1 2 21 22 2 2 b s s a a b s s a a                            s , (2) where a1 and b1 are the incident and reflected wave at port 1 with port resistance r1, and a2 and b2 are the incident and reflected wave at port 2 having port resistance r2, [12, 15]. classic abcd matrix to s matrix transformation formulas for two-port case give connection [12, 15] 2 1 1 2 11 2 1 1 2 a b g c r d r g s a b g c r d r g                , (3) 1 2 12 2 1 1 2 2 ( )r g a d b c s a b g c r d r g               , (4) 21 2 1 1 2 2 s a b g c r d r g         , (5) 2 1 1 2 22 2 1 1 2 a b g c r d r g s a b g c r d r g                 , (6) where 22 /1 rg  , fig. 1. fig. 1 two-port network 3. twoand three-port adaptors adaptors are memoryless digital elements whose task is to perform transformations between pairs of wave variables that are referred to different port resistances [1-4, 12]. they have low sensitivity to coefficient quantization. in this section, subsequently required twoand three-port adaptors are presented. 3.1. two-port adaptors the equations for two-port parallel adaptor are )( 2121 aaab  , (7) )( 2112 aaab  , (8) where the adaptor coefficient  = (r2  r1)/(r2 + r1) is usually written on the side corresponding to port 2. the equations for two-port series adaptor are 1u 1i 1r 1a 2a 1b 2b 2u 2i two-port network 2r 222 b. p. stošić 1 2 1 2( )b a a a     , (9) )( 2112 aaab  . (10) the adaptor coefficient can be defined also as  =  = (r1  r2)/(r2 + r1) and written on the side corresponding to port 1. in this case, the other form of eqs, (7)-(8) and eqs. (9)-(10) can be written. 3.2. three-port adaptors a network of three-port series adaptor with port 2 being reflection-free is depicted in fig. 2, [1-4, 12]. the adaptor coefficient  = r1 / r2, r2 = r1 + r3 is shown explicitly next to the port 1, fig. 2a. the set of equations for the three-port series adaptor with reflection-free port 2 is 3210 aaaa  , (11) 011 aab  , (12) )( 312 aab  , (13) )( 213 abb  . (14) fig. 2 three-port series adaptor with reflection-free port 2: a) symbol and b) wave digital network model a network of three-port parallel adaptor with port 2 being reflection-free is depicted in fig. 3, [1-4]. the adaptor coefficient  = g1 / g2, g2 = g1 + g3 is shown explicitly next to the port 1, fig. 3a. the set of equations for the three-port series adaptor with reflection-free port 2 is 3210 )1( aaaa  , (15) 1331 aabb  , (16) )( 3132 aaab  , (17) )( 3123 aaab  . (18) 3r 2r1r 3a 3a3b 3b 2a 2b 1a 1a 2a 1b 2 1 r r  1b 1 1   2b wave digital models of ideal and real transformers 223 fig. 3 three-port parallel adaptor with reflection-free port 2: a) symbol and b) wave digital network model 4. definition of an ideal transformer and its matrices a transformer usually consists of two coupled windings (primary and secondary) on a magnetic iron core. an ideal transformer is an imaginary transformer which does not have any loss in it, means no core losses, copper losses and any other losses in the transformer. efficiency of this transformer is considered as 100 %. in general, there are different cases of an ideal transformer depending on the polarity of the voltages and current ratios. also, the same turn ratio can be given in different ways. in general, the equation set of an ideal transformer is written according to the established reference polarities for currents (both currents entering or one entering and one leaving the dotted terminals) and voltages (both voltages positive/negative or one positive and one negative at the dotted terminals). in this section, the abcd and the scattering matrices parameters for one case of an ideal transformer are introduced and interconnected first and then the results are applied to develop wdf-based models, using only two-port series or parallel wave digital adaptors with the defined adaptor coefficient . a schematic symbol of an ideal transformer with turn ration n where both currents entering (are directed into the dot-marked terminal) and both voltages are positive at dotted terminals is presented in fig. 4. the abcd parameters of the ideal transformer given in fig. 4 can be easily obtained by considering its equation system 1 2/ 1/v v n , 1 2/i i n  , (19) and they are given in the matrix form as             n n dc ba 0 0/1 . (20) s-parameters of an ideal transformer can be found starting with its abcd matrix given in eq. (20) and the previously given classic formulas eqs. (3)-(6), as follows 3r 2r1r 3a 3a3b 3b 2a 2b 1a 1a 2a 1b 2 1 g g  1b 2b fig. 4 a schematic symbol of an ideal transformer 2i1i1v 2v n:1 224 b. p. stošić 21 2 21 2 11 1 1 grn grn s    , 21 2 21 12 1 2 grn grn s    , (21) 21 221 1 2 grn n s    , 21 2 21 2 22 1 1 grn grn s    . (22) 5. the wave digital models of an ideal transformer an ideal transformer is transformed to the wave digital domain by expressing its sparameter equations in the form corresponding to the equations of the two-port parallel or series adaptor networks and by choosing value of the adaptor coefficient . in order to represent an ideal transformer with the network based on two-port parallel adaptor, adaptor coefficient is chosen to be 2 2 1 2 2 1 r n r r n r       . (23) for this case, the s-parameters of the ideal transformer given in eqs. (21)-(22) can be written in the form 1 (1 ) (1 ) n n                 s . (24) for these obtained scattering parameters, according to formulation given in eq. (2), the set of equations for ideal transformer is 1 11 1 12 2 1 2 1 (1 )b s a s a a a n            , (25) 2 21 1 22 2 1 2(1 )b s a s a n a a           . (26) 5.1. the ideal transformer model based on two-port parallel adaptor network to synthesize the wave digital network of ideal transformer based on parallel adaptor network, eqs. (25)-(26) are written in the form of eqs. (7)-(8) as following 1 2 1 2 1 [ ( )]b a n a a n       , (27) 2 1 1 2( )b n a n a a      . (28) according to the last equations, wave digital network model of an ideal transformer based on two-port parallel adaptor network is depicted in fig. 5. in addition to wave digital network of two-port parallel adaptor [1-4], this transformer model has two more multipliers. the wdf-based model can be found in [3], but description in details is not present there. in fig. 6, the wave digital network models for different ideal transformer cases are symbolically presented. by observing the abcd parameters and models given in figs. 5 and 6, a generalization of multiplier values can be made. the multiplier in branch b1 always takes the value of parameter a. the multiplier in branch a1 takes the value of parameter d if parameters wave digital models of ideal and real transformers 225 a and d are both positive or negative, and value of d in the other cases (one positive and one negative parameter). (a) 1/ 0 0 a b n c d n             (b) fig. 5 ideal transformer: its realization for arbitrary choices of r1, r2 and n, based on two-port parallel adaptor network: (a) wave digital network model and (b) its symbolic representation nvv /1/ 21  , nii 21 /               n n dc ba 0 0/1 (a) an ideal transformer where one current entering and one leaving the dotted terminals and one voltage positive and one negative at dotted terminals nvv /1/ 21  , nii 21 /             n n dc ba 0 0/1 (b) an ideal transformer where both currents entering the dotted terminals and one voltage positive and one negative at dotted terminals nvv /1/ 21  , nii 21 /              n n dc ba 0 0/1 (c) an ideal transformer where one current entering and one leaving the dotted terminals and both voltages are positive at dotted terminals fig. 6 ideal transformers: equation systems and symbolic representations of their wave digital network models for arbitrary choices of r1, r2 and n, based on two-port parallel adaptor network with  = (r2  n 2  r1) / (r2 + n 2  r1) 1a 1b 2b 2a 1r 2r  n/1 1 2rn two-port parallel adaptor network n n/1 1а 1r 1b 1 2rn 2r 2b 2а  n n/1 1а 1r 1b 1 2rn 2r 2b 2а  n n/1 1а 1r 1b 1 2rn 2r 2b 2а  1 n n/1 1а 1r 1b 1 2rn 2r 2b 2а  1 226 b. p. stošić 5.2. the ideal transformer model based on two-port series adaptor network in order to form the wave digital model of an ideal transformer based on series adaptor network, the previously given eqs. (25)-(26) have to be written in the form of eqs. (9)(10) as shown        2121 11 a n aa n b , (29)              2112 1 a n aanb . (30) starting with eqs. (29) and (30), the wave digital network model for an ideal transformer based on two-port series adaptor network can be obtained and its representation in matlab simulink toolbox can be drawn. it will contain three multipliers with constant coefficients and three adders. its network model is modification of that one shown in fig. 5b, multiplier n is moved from branch of a1 to branch corresponding to b2, and multiplier 1/n from b1 to branch of a2. 5.3. wdf-based model possibilities a detailed description of synthesis process of wdf-based model for an ideal transformer case given in fig. 4 was given previously. one can follow the described procedure and develop wave digital network models for any possible case of ideal transformer and any way shown turn ratio. the choice of two-port series or parallel adaptors with defined coefficient  or  can be made depending on the problem at hand. solution which gives the simplest overall expressions for the particular problem is preferable. the simulink models of the parallel and series adaptors, as well as of different ideal transformer cases can be added in the simulink browse library between common used blocks and those blocks can be used further in generating wave digital network models of complex structures. 5.4. proof of the ideal transformer feature let’s consider first an ideal transformer shown in fig. 4 closed by a resistor r2 = rp. its input impedance is 2 1 1 n r drc bra i v z p p p r in p     . if r1 and r2 are port resistances, the reflection coefficient is 1 2 1 2 1 1 1 1)( rnr rnr rz rz a b z p p in in       . (31) the wave digital network of an ideal transformer based on two-port parallel adaptor shown in fig. 5 will be used in order to prove the main transformer feature. at the far end (port 2), it is terminated by a wave digital element corresponding to resistor (multiplier ). by substituting relation wave digital models of ideal and real transformers 227 2 2a b  (32) where 2 2 p p r r r r     , in the set of eqs. (25)-(26), the reflection coefficient is found to be 2 1 1 (1 ) (1 ) ( ) b z a              . (33) in case when resistance of the resistor at the far end is chosen to be equal to its port resistance rp = r2, the coefficient  takes zero value, and finally the reflection coefficient is 2 2 1 2 2 1 ( ) r n r z r n r         . (34) it is evident that the reflection coefficients given by eqs. (31) and (34) are the same. in this way, it is shown that this wave digital network operates exactly like ideal transformer, it modifies load impedance. 6. definition of a real transformer although transformers are used for different purposes, the fundamental theory and concepts of all transformers are same. a real transformer is non-ideal or practical iron-core transformer. contrary to an ideal transformer, a practical transformer has winding resistance, flux leakage, finite permeability and core losses. all these things have to be considered to derive equivalent circuit of a real transformer. a real transformer’s behaviour may be represented by an equivalent circuit model which contains an ideal transformer. the remaining elements are those elements that contribute to the non-ideal characteristics of the device. the linear model of a transformer, with core losses and load losses taken into account, is observed here. the ideal transformer can be shifted to either side of the circuit, and the observed equivalent circuit with secondary parameters referred to primary side is shown in fig. 7. this model is known as transformer t-equivalent circuit (t-model) [13, 14] and has been successfully used for many years in steady-state studies and some low-frequency transient studies. in the equivalent circuit, rp and rs are primary and secondary winding resistances (series resistances including conductor losses of each ending), xp = lp and xs = ls are primary and secondary leakage reactances. the parallel branch (so-called magnetizing branch of the model) represents the magnetic core of the transformer, where rc is core losses and xm = lm is magnetizing reactance. all parameters values in the transformer model shown in fig. 7 can be determined by carrying out experiments. the equivalent model with included capacitances between windings and between each winding and ground, and self capacitance of each winding, can be found in [13]. the wave digital model of such an equivalent circuit with included parasitic capacitances will be derived in the author’s future work. 228 b. p. stošić fig. 7 equivalent circuit of a practical transformer referred to the primary side 7. the wave digital model of a real transformer the analysis presented for an ideal transformer is helpful when digitizing the real transformer. the wdf-based model of real transformer is developed following the rules of interconnection of wave elements. to form wdf-based model from the transformer tequivalent circuit from fig. 7, it is advisable to divide it into several parts representing a real voltage source, three-port series/parallel adaptors with series/parallel element branches, an ideal transformer and load resistance. block connection in digital form, i.e. symbolic representation of wave digital model of real transformer is shown in fig. 8. in that way, the circuit elements are separated from their connection network. then, series and parallel element branches with resistor and inductor are represented by corresponding models. wave digital one-ports corresponding to the classical one-ports such as resistor, inductor and real voltage source can be found in [1-4, 12]. the one-ports are transformed into the wave digital domain by expressing their underlying physical law in terms of wave variables, applying the bilinear transform, and choosing the port resistances. in the literature [14], one can also find transformer  -model. it can also be transformed to wave digital domain by following the interconnection rules and by using wave digital one-port models marked in fig. 8. the wave digital network model parameters (port resistances and adaptor coefficients) are defined as , (35) 22 3 2432243 , , , g g ggglrrr mc  , (36) 33 5 46533 ' 6 ' 5 , , , r r rrrlrrr ss  , (37) 12 11112 , r r rrr in in  , (38) 23 12 1221223 , g g ggg  , (39) 34 23 3332334 , r r rrr  , and 34 2 34 2 rnr rnr out out    . (40) voltage source load resistor n:1 px pr 2' / nxx ss  2' / nrr ss  mx cr inr inv outr ideal transformertwo-port network 11 1 2211121 , , , r r rrrlrrr pp  wave digital models of ideal and real transformers 229 response in the formed network model can be easily found by use of block-diagram network drawn in simulink toolbox and some basic matlab functions allowing for accurate and fast modeling and analyzing of circuits. fig. 8 real transformer: symbolic representation of wdf-based network model 8. conclusion the application of wave digital approach in modeling and analysis of microstrip structures at high operating frequency is considered in [7, 8]. the two-port microstrip structures under investigation are represented by their equivalent circuits. generation of the equivalent circuit models is also presented in those papers. further in case of multi-port microwave circuits, one of the techniques to construct an equivalent-circuit model is based on numerical data from either full-wave analysis or measurement [9] in wide frequency range. for this purpose, system identification is performed on the impedance/admittance function. the generated equivalent circuit consists of connection network and lumped elements. the connection network does not store energy and can be represented by canonical form which only makes use of ideal transformers [16]. the element values and turns ratio of transformers are determined automatically [9]. equivalent circuit contains lossy elements, i.e. losses in the microwave structure are included through resistances and conductances. the main goal here is to digitize these devices (ideal and real transformers) based on their known equivalent circuits. because of that, one possible equivalent circuit of real transformer and its corresponding wave digital network model are shown. a schematic representation of the major low-frequency parasitic elements in a generalized transformer is shown in this paper. in most textbooks and literature, this model is used to describe the transformer behaviour. in general, this equivalent circuit is more accurate than that one of an ideal transformer, but less accurate than the exact one. also, it is possible to form wave digital network model of real transformer with included all high-frequency parasitic effects. such an equivalent circuit is capable of representing a practical design with considerable accuracy, but actual calculations would be very difficult in some cases. the wave digital model of such an equivalent circuit will be derived in the author’s future work. 11r 12rinr 34r e a b 33r 23r outr outout uа 2= outb 11 3r 5r1r 4r 6r2r 22r -1 t tt 2 42 3 0 0 0 n/1 2n  n 34r -1-1 inv 0 series branch parallel branch series branch ideal transformer one-port inductor one-port resistor voltage source '' ss lrmc lrpp lr 230 b. p. stošić in general, this paper shows how wave digital networks representing digital models of ideal and real transformers are synthesized based on scattering variables. wave digital model of the ideal transformer is developed based on two-port parallel/series adaptor networks. the wdf-based network model of the ideal transformer is modified to include the effects of winding resistance, flux leakage, finite permeability and core losses. in that way, real transformer is digitizing and its wdf-based model is formed. the author’s intention is to develop a software tool embedded in matlab for simulation of a wide variety of microwave structures based on their equivalent circuits and wave digital approach. a transformer is a very common magnetic structure which can be found in many applications. in the complex em structures, such as multiport microwave or radiating structures, connection subnetworks in their equivalent circuits can be represented based on ideal transformer [6, 9-11]. developed wave digital models of ideal and real transformers can be added in the simulink browse library between common used blocks and those blocks can be used further in generating wave digital network models of the mentioned complex structures containing transformers as interconnecting elements. now, an increase in a number of types of structures that can be efficiently modeled by using wave digital approach is obtained. compact wave digital network models, embedded into matlab, can provide considerable lower computational effort and run time in comparison with full-wave em analysis. due to the complexity of modern microwave structures and systems, an em full-wave analysis of these structures/systems is often prohibitive due to limitations in processing and memory capabilities. acknowledgement: this paper has been supported by the ministry for education, science and technological development of serbia under grant no. tr32052. references [1] a. fettweis, "digital filter structures related to classical filter networks", archiv für elektronik und übertragungstechnik, vol. 25, no. 2, pp. 79–89, 1971. [2] a. fettweis, "digital circuits and systems", ieee transactions on circuits and systems, vol. cas-31, no. 1, pp. 31-48, 1984. [3] a. fettweis, "wave digital filters: theory and practice", proc. ieee, vol. 74, no. 2, pp. 270-327, 1986. [4] s. bilbao, wave and scattering methods for numerical simulation, hoboken, new jersey: wiley, 2004. [5] j.a. russer, y. kuznetsov, p. russer, "discrete-time network and state equation methods applied to computational electromagnetics", microwave review, vol. 16, no. 1, pp. 2-14, 2010. [6] l.b. felsen, m. mongiardo, p. russer, electromagnetic field computation by network methods, springer-verlag, 2009. [7] b.p. stošić, n.s. dončov, a.s. atanasković, “response calculation of parallel-coupled resonator filters by use of synthezised wave digital network”, in proc. of the 11th international conference on telecommunications in modern cable, satellite and broadcasting services (telsiks), serbia, niš, october 16-19, 2013, vol.1, pp. 253-256. [8] b.p. stošić, n. dončov, j. russer, b. milovanović, ”a combined wave digital/full-wave electromagnetic approach used for response calculation in equivalent networks of microwave circuits“, in proc. of the international conference on electromagnetics in advanced applications (iceaa 2013), italy, torino, september 9-13, 2013, pp. 569-572. [9] j. russer, f. mukhtar, b.p. stošić, t. asenov, a. atanasković, n.s. dončov, b.milovanović, p. russer, “systematic network model generation for linear reciprocal microwave multiports”, in proc. of the 7th european microwave integrated circuits conference eumic 2012, the nederlands, amsterdam, 29-30 october 2012, pp. 40-43. wave digital models of ideal and real transformers 231 [10] p. russer, "network-oriented modeling of radiating electromagnetic structures", turkish journal of electrical engineering, vol. 10, no. 2, pp. 147-162, 2002. [11] p. lorenz, p. russer, "connection subnetworks for the transmission line matrix (tlm) method" in timedomain methods in modern engineering electromagnetics, ser. springer proceedings in physics, p. russer and u. siart, eds. berlin, springer, vol. 121, pp. 263-281, 2008. [12] m.v. gmitrović, microwave and wave digital filters, faculty of electronic engineering, niš, serbia, 2007 (in serbian). [13] b. whitlock, "audio transformers" in handbook for sound engineers, g.m. ballou, jensen transformers inc., chatsworth, ca, 2006. [14] k. shaarbafi, transformer modelling guide, teshmont consultants lp, 2014. [15] b.p. stošić, n.s. dončov, "synthesis and use of wave digital networks of admittance inverters", microwave review, vol. 19, no.2, pp. 89-95, 2013. [16] p. russer, m. mongiardo, l.b. felsen, "electromagnetic field representations and computations in complex structures iii: network representations of the connection and subdomain circuits", international journal of numerical modelling: electronic networks, devicesand fields, vol. 15, no. 1, pp. 127-145, 2002. 11421 facta universitatis series: electronics and energetics vol. 36, no 3, september 2023, pp. 365-378 https://doi.org/10.2298/fuee2303365c © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper chaos synchronization using super-twisting sliding mode control applied on chua’s circuit abdelilah chibani1, bachir daaou2, abdelmadjid gouichiche1, ahmed safa1, yacine badaoui1, zakaria chedjara1 1 electrical engineering and plasma laboratory lgep, university of tiaret, algeria 2laboratory avcis, university of mohamed boudiaf, oran, algeria abstract. chua’s circuit is the classic chaotic system and the most widely used in serval areas due to its potential for secure communication. however, developing an accurate chaos control strategy is one of the most challenging works for chua’s circuit. this study proposes a new application of super twisting algorithm (stc) based on sliding mode control (smc) to eliminate or synchronize the chaos behavior in the circuit. therefore, the proposed control strategy is robust against uncertainty and effectively regulates the system with a good regulation tracking task. using the lyapunov stability, the property of asymptotical stability is verified. the whole of the system including the (control strategy, and chua’s circuit) is implemented under a suitable test setup based on dspace1104 to validate the effectiveness of our proposed control scheme. the experimental results show that the proposed control method can effectively eliminate or synchronize the chaos in the chua's circuit. key words: chaos control, chua’s circuit, control design super-twisting 1. introduction in a natural phenomenon, such as varied weather, chaos is an evidently, stochastic motion in deterministic nonlinear systems that present a bounded unstable dynamic behavior. chaos has been extensively investigated since lorenz reported a sensitive dependence on initial conditions in an atmosphere prediction model and includes infinite unstable periodic motion. therefore, attract the attention of research community in all the branches dealing with evolutionary processes: chemistry, biology, medicine, genetics, economics, sociology and electronic systems [1–7]. one of the most popular nonlinear electronic systems is chua’s circuit which is a classical example of bifurcation and chaos in nonlinear circuits in many studies. invented in 1983, chua’s circuit has been extensively considered research subject to analyze chaotic phenomena. on the other side, random received december 17, 2022; revised february 19, 2023; accepted february 23, 2023 corresponding author: abdelilah chibani electrical engineering and plasma laboratory lgep, university of tiaret, algeria e-mail: abdelilah.chibani@gmail.com 366 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara motion of a system in a chaotic situation was considered to be unfavorable in engineering fields. therefore, many efforts were given to eliminate or control chaos in the systems, which led to launching the work on chaos control in 1990 such as the ogy (ott, gerbogi and york) control method [8], linear feedback control [9], [10], time delay feedback control [4], [11], [12] and some others were reported: the control of chaos such as sliding mode control [13–17], fuzzy control[18–22], polynomial approach [23] high order sliding mode control [24] and harmonic approach [25], [26], etc. many researchers have been addressed the control of chua’s circuit, in several control methodologies. in [21] the authors present an h∞ tracking performance design scheme via fuzzy adaptive observerbased control for chaotic chua’s systems with output time delay. in [27], [28], the adaptive technique and high-gain methods were proposed respectively to achieve bounded synchronization in the presence of a norm-bounded perturbations. in [29], j. yan et al. proposed an adaptive synchronization of modified chua’s circuit, this technique based on adaptive switching surface in order to guarantee the occurrence sliding motion. in [30], the authors present a new technique for chaos synchronization based on quasisliding mode control for rikitake chaotic system. global anti-synchronization of chaotic modified chua’s circuits via linear feedback control is investigated in [31]. the investigations in [32] unveiled a novel robust chaotic controller for stabilizing uncertain time delay chaotic systems with input non-linearity. in [33], dadras et al. propose a sliding mode controller for new chaotic dynamical system. in [34], in this study, authors focused more on the fractional order and adaptive finite-time sliding mode control in the financial risk chaotic system. however, despite the advantage of the controller, the chattering phenomenon associated with the classical sliding mode controller occurs and clear. accordingly, this paper proposes a new and simple chaos control strategy designed to achieve the chaos synchronization or chaos suppression for chua’s circuit. therefore, we shall debate how to design the super twisting-based on the sliding mode technique for chua’s circuit under parameter uncertainties. the super twisting sliding mode control stability of the closed loop system is proved by using the lyapunov theory. moreover, to validate our proposal we develop a test bench based on the dspace 1104, for more detail see fig.5. the rest of the paper is arranged as follows: the chua’s circuit and its characteristics are given in section 2, section 3 presents the mathematical development of the proposed controller, experimental results are reported in section 4. finally, some concluding remarks are discussed in section 5. 2. problem statement and preliminaries 2.1. chua’s circuit the chaotic chua’s circuit, as shown in fig.1, is a simple electronic circuit that consists of one inductor il, two capacitors c1; c2, one linear resistor r, and a nonlinear resistor nlr [35]. the chua’s circuit can be described by a third-order nonlinear differential equation, according to the electronics theory, the mathematical model of chua’s circuit is given by: chaos synchronization using super-twisting sliding mode control applied on chua’s circuit 367 ( ) ( ) ( ) 1 1 2 1 1 2 2 1 2 2 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) 1 1 l l d t c t t g t dt r d t c t t i t dt r di t l t dt          = − −   = − +   = −  (1) fig. 1 chua’s circuit where v1, v2 respectively are the voltages across capacitors c1 and c2; il is the current through inductor l ; stands for the current through the nonlinear resistor nlr and can be expressed by a piecewise-linear function. 1 1 1 1( ) 0.5( ) 1 1nr b a bi g g g g   = = + − − + − −‖ ‖ ‖ ‖ (2) for simplicity, a sole circuit system is described as, ( ( ), ) dx f x t t dt = , where,  1 1( ) ( ), ( ), ( ) , t lx t t t i t =  1( ( ), ) ( ) ( ( )),0,0 t f x t t ax t g t = − 1 1 1 , c r  = 1 1 , c  = 2 1 2 1 1 1 , , , c r c l   = = = 0 . 0 0 a       −    = −    −  table.1 represent the parameters adopted for chua’s circuit. however, our objective after this simulation is to validate the proposed parameters and to build a prototype (pcb), for more detail see fig. 2. table 1 parameters adopted for chua’s circuit parameters values unite r1 r2 220 ω r3, r4, r6 2200 ω r5 3300 ω amplificator tl084 / variable resistor 2200 ω c1 10 nf c2 10 nf indictor 9 mh 368 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara fig. 2 chua’s circuit prototype: (a) schematic under proteus, (b) pcb design fig. 2a presents the electronic circuit under the proteus platform. however, this phase we need to validate the functioning of chua's circuit. fig. 2b presents the pcb prototype of the circuit. fig. 3 simulation results in open loop using proteus platform: (a) voltage capacitor vc1, (b) voltage capacitor 2vc , (c) current inductor li fig. 3 focuses on three components: fig. 3a the voltage across a capacitor vc1, fig. 3b the voltage across another capacitor vc2, and fig. 3c the current through an inductor il. the simulation results show that the behavior of these components presents a chaotic phenomenon, meaning they exhibit unpredictable and seemingly random behavior over time. 2.2. objectives the main objectives of this study are as follows: ▪ construct chaos control strategy u(t) based on the sliding mode technique moreover, guarantee the synchronization stability under the healthy condition or in the case of perturbations. ▪ performing the proposed control scheme physically, so that the closed-loop chua’s circuit can be implemented by circuits (tl084) and the dspace 1104 card. chaos synchronization using super-twisting sliding mode control applied on chua’s circuit 369 3. super twisting algorithm the sliding mode control is one of the most accurate and robust control techniques. the typical first-order sliding mode control causes undesirable high-frequency chattering problem. the chattering phenomena can be eliminated by using the second order sliding mode control. however, different second order sliding mode topology such as: the super twisting algorithm, drift algorithm, sub-optimal algorithm, and prescribed convergence algorithm are discussed in literature [16], [36]–[38]. therefore, the super-twisting algorithm is a second order sliding mode controller is more suitable for the system with relative degree one. the main advantage of this algorithm: first, it does not require the time derivative information of the sliding variables. while, measurement of derivative of sliding surface is required which may increase noise in the system. second, reduce the charting phenomena. the super twisting strategy present the control law as a combination between two functions: the continuous sliding variable function and the integral of a discontinuous sliding variable function. furthermore, we have chosen the super-twisting algorithm since the relative degree of our system and we seek for the finite time convergence which is one of its features. in this section, we present the synthesis of super-twisting approach in order to control the chua’s circuit. we consider the nonlinear system with the following dynamics: ( ) ( ) ( ) dx f x b x u t dt = + (3) where 1, ( ) , 0x r f x r b r and b r−     the main objective is to lead the state vectors to track their references vector. therefore, the error vector ei (t) = 0 tends to zero vector. the block in diagram fig. 4 represents the general methodology for our application. fig. 4 block diagram of the controller scheme the control law 1 2 3[ ]tu u u u= is designed to drive the system eq. (1) to the desired surface 1 2 3[ ]ts s s s= 370 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara the sliding surface is selected as 1 1 1 1 2 2 2 2 3 3 ref ref ref l l s e s s e s e i i      −         = = = −          −      (4) where s is the synchronization error and the sliding surface respectively. proposition 1 consider system eq. (1) and the sliding surface s defined in eq. (4). let introduce the super twisting algorithm. 1 s ( ) s ( ) p i n n i n u s ign s ign s dt      = +  =  (5) where i and i are a positive constant number. proposition 2 consider the system eq. (1), the sliding surface present in eq. (4) and the supertwisting proposition 1 in eq. (5), let’s the control input in closed-loop system describe by eq swu u u= + (6) with, 1 1 1 2 2 2 3 3 3 eq sw eq sw eq sw u u u u u u u u u u  +     = = +      +    (7) where, sw iu : is the switching control function. the switching control function drives the system in any initial state to reach the sliding manifold in finite time, which are calculated through the application of the super-twisting algorithm, see system eq. (5). q i eu : is the equivalent control function. the equivalent control function drive the system to move over the sliding manifold under ideal conditions. one of its features, can speed-up the response of the system and reduce the steady state errors [39]. the equivalent control function is calculated by setting the derivative of the sliding surface tend to 0, 0ids dt = . 1 1 1 1 2 2 2 2 3 3 0 0 0 ref ref ref l l s e ds d d d s e dt dt dt dt s e i i      −             = = = − =             −       (8) chaos synchronization using super-twisting sliding mode control applied on chua’s circuit 371 ( ) ( ) ( ) 1 2 1 1 1 2 2 1 2 3 2 ( ) ( ) ( ) ( ) ( ( ) ( ) )( ) ( ( ) ) ref eq ref eq eq i l eq ref l d t t g t dt u d u u t t i t dt u di t dt               − − −        = = − − +          − −    (9) based on the equations eq. (1), (5), (6), (7) and eq. (8) the super-twisting controller is given by ( ) ( ) 1 2 1 1 1 1 2 2 1 2 2 3 3 2 3( ( ) ( ) ( ( ) ( ) ( ) )( ) ( ) ( ( ) )) ref ref i l ref dx g dt u dx u u i d t t u dx dt t t t t t t             − − − +        = = − − + +          − − +    (10) where, 1 11 1 1 12 1( ) ( ) , p k s sign s k sign s dt = +  2 21 2 2 22 2( ) ( ) p k s sign s k sign s dt = +  33 32 3( ) p k s sign s dt =  3.1. stability proof consider the super-twisting controller given by eq. (6), the tracking errors [ ]i ie e= = [ ]i i refx x= − are globally asymptotically stable. let’s using eq swu u u= + , in this case, the matter of the stability condition is expressed as: 0 0 ds s and dt = = (11) the dynamics of the system eq. (2) is subjected to the following: ds s dx dt x dt  =  (12) since ( ) ( ) ( ) dx f x b x u t dt = + (13) by using eq. (6) and eq. (13) we have  ( ) ( ) ( ) ds s f x b x u t dt x  = +  (14) 372 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara [ ( ) ( ) ] [ ( ) ]eq sw ds s s f x b x u b x u dt x x   = + +   (15) by setting 0 ds dt = ds dt = 0 and 0swu = we get [ ( )] [ ( )] eq s f x xu s b x x  = −   (16) using eq. (15) and eq. (16) we get ( ) sw ds s b x u dt x  =  (17) we consider the lyapunov candidate function 21 2 v s= (18) the derivative of along the trajectories of the system is given by: 31 2 1 2 3 dsds dsdv ds s s s s dt dt dt dt dt = = + + (19) to ensure the condition of global asymptotic stability, we have two issues: firstly, we must verify the decrease of the lyapunov function to zero. secondly, it’s needful to ensure the derivative of lyapunov function is negative. for our purpose its sufficient to verify that its derivative is negative. 0 0 dv ds s dt dt    (20) ( ) sw ds s s s b x u dt x  =  (21) 1 2 331 2 1 2 3( ) ( ) ( ) 0sw sw sw ss sds s s b x u s b x u s b x u dt x x x   = + +     (22) from eq. (10) we have 1 11 1 1 12 1 2 21 2 2 22 2 3 31 3 3 32 3 ( ) ( ) ( ) ( ) ( ) ( ) p sw pi sw sw p sw k s sign s k sign s dt u u u k s sign s k sign s dt u k s sign s k sign s dt  +        = = +         +      (23) by replacing eq. (23) in eq. (22) we obtain chaos synchronization using super-twisting sliding mode control applied on chua’s circuit 373 1 1 11 1 1 12 1 2 2 21 2 2 22 2 3 3 31 3 3 32 3 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) 0 p p p sds s s b x k s sign s k sign s dt dt x s s b x k s sign s k sign s dt x s s b x k s sign s k sign s dt x   = +     + +     + +       (24) let’s introduce the nonlinear term as ( )i i is sign s s= (25) 1 11 1 1 12 1 2 21 2 2 22 2 3 31 3 3 32 3 ( ) ( ) ( ) ( ) ( ) ( ) 0 p p p sds s b x k s s k sign s dt dt x s b x k s s k sign s dt x s b x k s s k sign s dt x   = +     + +     + +       (26) 1 1 1 11 1 1 12 1 2 2 2 21 2 2 22 2 3 3 3 31 3 3 32 3 ( ) ( ) 0 ( ) ( ) 0 ( ) ( ) 0 p p p ds s s b x k s s k sign s dt dt x ds sdv s b x k s s k sign s dt dt dt x ds s s b x k s s k sign s dt dt x     +              = = +               +             (27) where 11 12 21 22 31 32, , , , ,k k k k k k are a constant number. to sum up, the term ( )is b x x   is positive according to the system under consideration, where as the gains kij must be selected negative in order to satisfy the condition stability shown below. in the end, the requirement of global asymptotic stability is achieved. 4. experimental results a chua’s circuit is developed to validate the analysis described above. table.1 contains the details of chua’s circuit parameters. a suitable test setup built around the dspace 1104 serves to implement the mathematical model which was established with closed-loop control. the experimental set-up for this work is depicted in fig. 5. the following constitutes the test setup: ▪ the chua’s chaotic system. ▪ a dc power supply is to deliver dc voltage (5v, +15v, -15v) from an ac network. ▪ an interface controller board dspace (model ds 1104) with a power pc 603e at 400 mhz and a fixed-point digital signal processor dsp tms320f240. 374 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara fig. 5 experimental setup fig. 5, presents a test setup depicted for chua's chaotic system, the setup is designed to operate with a dc power supply that converts ac voltage from the network into a stable dc voltage of 5v, +15v, and -15v. the system also includes an interface controller board, referred to the dspace model ds1104. the dspace board is equipped with a powerpc 603e processor running at a clock frequency of 400 mhz. this is designed to handle real-time digital signal processing tasks and is an important component in the overall control and monitoring of chua's chaotic system and validate our proposed control scheme. fig. 6 presents the experimental results in open-loop of the chua's circuit. as shown in fig. 6a, the time response of voltage capacitor vc1 is depicted, in fig. 6b the variation of vc2 is illustrated, and in fig. 6c the time response of the il is presented. from these figures, it can be observed that the chua's circuit generates chaotic phenomena, which is a characteristic behavior of the chua's circuit. the chaotic oscillations of vc1 and vc2 are clearly visible in fig. 6a and fig. 6b, respectively. furthermore, the time response of il in fig. 6c. fig. 7 demonstrates the experimental behavior of chua's circuit under the application of the proposed super twisting control scheme. as shown in fig. 7a and fig. 7b, the evolution of capacitor voltage vc1 and vc2 are closely follows their references, which indicates that the synchronization design is guaranteed and effectively realized. fig. 7c illustrates the experimental behavior of the static error, which confirms that the proposed scheme is both effective and convincing. to further investigate the performance of the super twisting sliding mode algorithm, we evaluated the proposed scheme under various conditions, including both fixed point and periodic orbit scenarios. as illustrated in fig. 8.a and fig. 8.b, the effectiveness of our proposed scheme is clearly demonstrated in closed-loop. additionally, to evaluate the robustness of the proposed method, we also chaos synchronization using super-twisting sliding mode control applied on chua’s circuit 375 tested its performance in the presence of disturbances and system parameter variations. the results show that our proposed method is effective in ensuring the control, synchronization and stability of the chua's circuit system. fig. 6 experimental results in open loop: (a) current inductor il (b) voltage capacitor vc1 (c) voltage capacitor vc2 fig. 7 experimental time response of the state variables in closed loop with: (a) voltage capacitor 1vc , (b) voltage capacitor 2vc , (c)time responses of the tracking errors 376 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara fig. 8 time response of the state’s variable with different reference (a) capacitor voltage 1vc , (b) capacitor voltage 2vc 5. conclusion in this paper, we presented a chaos controller algorithm for chua’s chaotic system. a new application for super twisting sliding mode controller was proposed. the controller scheme aims to making the states of chua’s circuit to track their desired states; therefore, we tested the ability of the proposed approach under different situations. however, synchronization results of the closed-loop chua’s circuit have been achieved based on lyapunov stability theory. moreover, an experimental test setup is presented to demonstrate the effectiveness of the proposed method. references [1] v. annovazzi-lodi, g. aromataris, m. benedetti, m. hamacher, s. merlo and v. vercesi, "close-loop three-laser scheme for chaos-encrypted message transmission", opt. quantum electron., vol. 42, no. 3, pp. 143-156, 2010. [2] z. wang and k. t. chau, "anti-control of chaos of a permanent magnet dc motor system for vibratory compactors", chaos solitons fractals, vol. 36, no. 3, pp. 694-708, 2008. [3] a. chibani, b. daaou, a. gouichiche, a. safa and y. messlem, "finite-time integral sliding mode control for chaotic permanent magnet synchronous motor systems", arch. electr. eng., vol. 66, no. 2, 2017. [4] l. li, w. li and f.-d. li, "chaos induced in brushless dc motor via current time-delayed feedback", opt. int. j. light electron opt., vol. 125, no. 21, pp. 6589-6593, 2014. [5] m. usama, m. k. khan, k. alghathbar and c. lee, "chaos-based secure satellite imagery cryptosystem", comput. math. appl., vol. 60, no. 2, pp. 326-337, 2010. [6] f. lin, c.-h. chung and j.-h. lin, "a chaos-based visual encryption mechanism for clinical eeg signals", med. biol. eng. comput., vol. 47, no. 7, pp. 757-762, 2009. [7] c. abdelilah, "observation et commande par mode glissant pour des systèmes chaotiques complexes", phd thesis, université ibn khaldoun-tiaret-, 2018. [8] e. ott, c. grebogi and j. a. yorke, "controlling chaos", phys. rev. lett., vol. 64, no. 11, p. 1196, 1990. [9] g. chen, “controlling chua’s global unfolding circuit family", ieee trans. circuits syst. fundam. theory appl., vol. 40, no. 11, pp. 829-832,1993. [10] t. yassen, "chaos control of chen chaotic dynamical system", chaos solitons fractals, vol. 15, no. 2, pp. 271-283,2003. [11] k. pyragas, "continuous control of chaos by self-controlling feedback", phys. lett. a, vol. 170, no. 6, pp. 421-428, 1992. chaos synchronization using super-twisting sliding mode control applied on chua’s circuit 377 [12] s. kilinc, m. e. yalcin and s. ozoguz, "multiscroll chaotic attractors from a hysteresis-based time-delay differential equation", int. j. bifurc. chaos, vol. 20, no. 10, pp. 3275-3281, 2010. [13] m. falahpoor, m. ataei and a. kiyoumarsi, "a chattering-free sliding mode control design for uncertain chaotic systems", chaos solitons fractals, vol. 42, no. 3, pp. 1755-1765, 2009. [14] d. chang and j.-j. yan, "adaptive robust pid controller design based on a sliding mode for uncertain chaotic systems", chaos solitons fractals, vol. 26, no. 1, pp. 167-175, 2005. [15] s. dadras and h. r. momeni, "adaptive sliding mode control of chaotic dynamical systems with application to synchronization", math. comput. simul., vol. 80, no. 12, pp. 2245-2257, 2010. [16] a. chibani, b. daaou, a. gouichiche, and a. safa, "nonlinear control applied to chaotic system using sliding mode", in proceedings of the 2014 international conference on electrical sciences and technologies in maghreb (cistem), 2014, pp. 1-5. [17] s. mobayen, a. fekih, s. vaidyanathan and a. sambas, "chameleon chaotic systems with quadratic nonlinearities: an adaptive finite-time sliding mode control approach and circuit simulation", ieee access, vol. 9, pp. 64558-64573, 2021. [18] c. chang, "a robust tracking control for chaotic chua’s circuits via fuzzy approach", ieee trans. circuits syst. fundam. theory appl., vol. 48, no. 7, pp. 889-895, 2001. [19] y. li, s. tong and t. li, "adaptive fuzzy output feedback control for a single-link flexible robot manipulator driven dc motor via backstepping", nonlinear anal. real world appl., vol. 14, no. 1, pp. 483-494, 2013. [20] s. yu and t. s. wu, "fuzzy adaptive observer-based control for chua’s circuit with output time delay", iet circuits devices syst., vol. 5, no. 4, pp. 303-320, 2011. [21] y. li, "chaos control of new mathieu–van der pol systems by fuzzy logic constant controllers", appl. soft comput., vol. 11, no. 8, pp. 4474-4487, 2011. [22] a. sambas et al., "investigation of chaotic behavior and adaptive type-2 fuzzy controller approach for permanent magnet synchronous generator (pmsg) wind turbine system", aims math., vol. 8, no. 3, p. math-08-03-285, 2023. [23] b. aguirre-hernandez, e. campos-canton, j. a. lopez-renteria and e. c. diaz gonzalez, "a polynomial approach for generating a monoparametric family of chaotic attractors via switched linear systems", chaos solitons fractals, vol. 71, pp. 100-106, 2015. [24] r. aguilar-lopez, r. martinez-guerra, h. puebla and r. hernandez suarez, "high order sliding-mode dynamic control for chaotic intracellular calcium oscillations", nonlinear anal. real world appl., vol. 11, no. 1, pp. 217–231, 2010. [25] b. aguirre, j. alvarez-ramirez, g. fernandez, and r. suarez, "first harmonic analysis of linear control systems with high-gain saturating feedback", int. j. bifurc. chaos, vol. 7, no. 11, pp. 25012510, 1997. [26] r. suarez, j. alvarez-ramirez, and b. aguirre, "first harmonic analysis of planar linear systems with single saturated feedback", int. j. bifurc. chaos, vol. 6, no. 12b, pp. 2605-2610, 1996. [27] j. pei, h. fan, y. zhao and j. feng, "adaptive synchronization of fractional-order nonlinearly coupled complex networks with time delay and external disturbances", ieee access, vol. 6, pp. 4653-4663, 2018. [28] z. jin, g.-h. yang and w.-w. che, "adaptive pinning control of deteriorated nonlinear coupling networks with circuit realization", ieee trans. neural netw. learn. syst., vol. 23, no. 9, pp. 1345-1355, 2012. [29] j. yan, j.-s. lin and t.-l. liao, "synchronization of a modified chua’s circuit system via adaptive sliding mode control", chaos solitons fractals, vol. 36, no. 1, pp. 45-52, 2008. [30] y.-y. hou et al., "rikitake dynamo system, its circuit simulation and chaotic synchronization via quasi-sliding mode control", telkomnika telecommun. comput. electron. control, vol. 19, no. 4, p. 4, 2021. [31] y. chen, m. li and z. cheng, "global anti-synchronization of master–slave chaotic modified chua’s circuits coupled by linear feedback control", math. comput. model., vol. 52, no. 3, pp. 567-573, 2010. [32] c. pai, "chaotic sliding mode controllers for uncertain time-delay chaotic systems with input nonlinearity", appl. math. comput., vol. 271, pp. 757-767, 2015. [33] s. dadras, h. r. momeni, and v. j. majd, "sliding mode control for uncertain new chaotic dynamical system", chaos solitons fractals, vol. 41, no. 4, pp. 1857-1862, 2009. [34] m. d. johansyah et al., "dynamical analysis and adaptive finite-time sliding mode control approach of the financial fractional-order chaotic system", mathematics, vol. 11, no. 1, p. 1, 2023. [35] t. matsumoto, "a chaotic attractor from chua’s circuit", ieee trans. circuits syst., vol. 31, no. 12, pp. 1055-1058, 1984. [36] k. pati and n. c. sahoo, "adaptive super-twisting sliding mode control for a three-phase single-stage gridconnected differential boost inverter based photovoltaic system", isa trans., vol. 69, pp. 296-306, 2017. 378 a. chibani, b. daaou, a. gouichiche, a. safa, y. badaoui, z. chedjara [37] l. liu, j. pu, x. song, z. fu and x. wang, "adaptive sliding mode control of uncertain chaotic systems with input nonlinearity", nonlinear dyn., vol. 76, no. 4, pp. 1857-1865, 2014. [38] o. chua, l. kocarev, k. eckert, and m. itoh, "experimental chaos synchronization in chua’s circuit", int. j. bifurc. chaos, vol. 2, no. 3, pp. 705-708, 1992. [39] m. derbeli, m. farhat, o. barambones and l. sbita, "control of pem fuel cell power system using sliding mode and super-twisting algorithms", int. j. hydrog. energy, vol. 42, no. 13, pp. 8833-8844, 2017. instruction facta universitatis series: electronics and energetics vol. 27, no 2, june 2014, pp. 259 273 doi: 10.2298/fuee1402259n physical modeling of electrical and dielectric properties of high-k ta2o5 based mos capacitors on silicon  nenad novkovski institute of physics, faculty of natural sciences and mathematics, university “ss. cyril and methodius”, arhimedova 3, 1000 skopje, macedonia abstract. in this paper we present an integral physical model for describing electrical and dielectric properties of mos structures containing dielectric stack composed of a high-k dielectric (with emphasize on pure and doped ta2o5) and an interfacial silicon dioxide or silicon oxynitride layer. based on the model, an equivalent circuit of the structure is proposed. validity of the model was demonstrated for structures containing different metal gates (al, au, pt, w, tin, mo) and different ta2o5 based high-k dielectrics, grown of bare or nitrided silicon substrates. the model describes very well the i-v characteristics of the considered structures, as well as frequency dependence of the capacitance in accumulation. stress-induced leakage currents are also effectively analyzed by the use of the model. key words: high-k dielectrics, metal-insulator-silicon structures, conduction mechanisms in dielectrics, leakage currents 1. introduction further scaling of microelectronic devices required for new generations of integrated circuits is confronting multiple challenges, rather important one of them being the fabrication of ultrathin dielectric layers used particularly in mosfets and drams. while decreasing the lateral size of devices, in order to obtain the required capacitance, a decrease of the equivalent oxide thickness is required. the above requirement can be met either by decreasing the physical thickness or by increasing the permittivity of the dielectric (gate oxide for mosfets, dielectric in mos capacitors of drams). doped, mixed and laminate high-permittivity (high-k) dielectric stacks attract progressively higher attention as a solution for further improvement of their electrical and dielectric properties [1]-[13]. it has been shown that ta2o5, known as one of the most attractive dielectrics for the nanoscale dynamic random-access memories, can improve  received february 5, 2014 corresponding author: nenad novkovski institute of physics, faculty of natural sciences and mathematics, university “ss. cyril and methodius”, arhimedova 3, 1000 skopje, macedonia (e-mail: nenad@iunona.pmf.ukim.edu.mk) 260 n. novkovski further by doping with convenient elements [14]. detailed studies of the properties of tantalum pentoxide doped with al, ti and hf and mixed with hfo2 have been reported [15][30]. in addition, it has been shown that the nitridation of the si substrate improves substantially electrical, dielectric and reliability properties of metal-high-k-si structures [31]. in [32] we described in detail a comprehensive model for the i-v characteristics of metal-ta2o5/sio2-si structures. in this work we present integrally the generalization of the comprehensive model for mis structures containing dielectric stack composed of a high-k dielectric (particularly pure and doped ta2o5) and an interfacial silicon dioxide or silicon oxynitride layer and review the important results obtained with using specific cases of this model for various mos structures of the considered type. 2. theoretical model 2.1. band diagram band diagram of the considered structure in the case of al gate is shown in fig. 1. 4 .0 5 ev al 4 .2 5 ev vacuum level ec  e  h high-k  e if si 1.12 ev sio2 or sioxny ms ef ev  e '  e h k s  h ' fig. 1 band diagram of the considered structure in fig. 1 ehk and eif are the bandgaps of the high-k and the interfacial layer, respectively. e' and h' are band offsets for electrons and holes, respectively, at the contact between the high-k and the interfacial layer, while e and h are band offsets for electrons and holes, respectively, at the contact between the interfacial layer and the silicon substrate. ms is the work function difference between the metal gate and si, while s is the shottky barrier height for electrons. in the case of al gate, ta2o5 high-k dielectric and sio2 interfacial layer the values are those summarized in table 1. work function difference, ms, depends on the si substrate doping and is the same as in the case of the corresponding metal-sio2-si structure. for p-type substrates it is around 0.5 ev. table 1 values of bandgaps and band offsets for al-ta2o5/sio2-si structures ehk (ev) eif (ev) e (ev) h (ev) e' (ev) h' (ev) s (ev) 8.97 4.4 3.15 4.97 3.06 1.51 0.29 physical modeling of ta2o5 based mos capacitors on si 261 2.2. conduction mechanisms the conduction mechanisms that have to be considered in general case for the interfacial layer are:  hopping conduction, which is a result of the quantum diffusion of electrons between the localized states in the insulator, typical of disordered materials. this is a bulk-limited conduction mechanism, and hence it does not depend on the gate voltage polarity. since the current density in this case is a linear function of the electric filed, we can consider it as a conductivity of ohmic type.  the trap-assisted inelastic tunneling [33]-[34]. electrons tunnel from the silicon to the traps in the sio2 layer. as the sio2 is an amorphous material with low trap density it is expected to observe this effect only in the films where the traps are created as a result of a stress, radiation or process induced damage. in the case of an sioxny interfacial layer significantly higher density of traps is to be expected. however, this density is still very low compared to typically high density materials.  direct tunneling (trough a trapezoidal barrier) and fowler-nordheim injection (trough a triangular barrier) into interfacial layer. tunneling current can be created by the electrons or the holes from the si substrate. the barrier for the tunneling of the holes is different from that for the electrons, thus a remarkable asymmetry can be observed between the opposite polarities. a particular mechanism involving both sioxny and high-k is the tunneling through double barrier (through a trapezoidal barrier in sio2 and a triangular barrier in high-k). the conduction mechanisms that have to be considered for the high-k dielectric are:  poole-frenkel mechanism, which is bulk-limited, and hence independent on the gate bias polarity. electrons are exited to the conduction band from the traps by field-enhanced thermal emission and they drift trough the layer. because of the high defect density, they are easily trapped by other positively charged defects. new electrons are released from other traps, thus transporting the charge step by step from one surface of the film to the opposite (fig. 2). when the gate is negative, electron needs first to enter the insulator from the metal gate. it is to be noted that they do not need to obtain enough energy to enter the conduction band, but just to move to a defect-related state in the vicinity of the metal surface. the activation energies of the defects responsible for the poole-frenkel emission in the ta2o5 are 0.2 ev (type a, [35]) and 0.8 ev (type d, must probably the first ionization level of the double-donor oxygen vacancy, [36]). they are close to or lower than the metal-gate fermi level (0.29 ev under the conduction band of ta2o5. we estimated the tunneling probability from the al-gate to the neighboring traps to be so high that extremely high current densities of order of 100 a/cm 2 can be attained for a voltage drop of only few mv.  shottky emission, which is an electrode-limited effect. schottky conduction is excluded for gate positively biased, because the side of the high-k layer near the negative electrode is not in direct contact with a metal or semiconductor. for the gate negatively biased, the barrier is low (for ta2o5 only 0.29 ev), and hence the schottky emission is to be expected. however, it is not expected to be a currentlimiting mechanism, because thus injected electrons are quickly trapped in the the high-k layer near the contact with the metal, continuing the transport by the poole262 n. novkovski frenkel emission from the traps. namely, the pure schottky effect occurs when electrons are injected from the metal in vacuum. the situation is similar when they are injected in a medium where they can almost freely traverse the distance from the injecting to the opposite electrode, as is the case with the ultra-thin sio2 or sioxny if the defect density is fairly low. for metals with higher absolute values of the work functions this issue requires further consideration. we observed a particular effect of charge trapping at the interface between the metal gate and the high-k dielectric for au and pt [37]-[39]. although the schottky emission from the metal to the high-k conduction band is practically impossible, an emission to the traps can substantially influence the leakage currents. for example, in the case of ta2o5 and a pt electrode, the fermi level in the metal is about 0.6 ev lower than the trapping level of the d type defect. in that case the filling of the traps d type can occur by thermal emission from the metal, leading to a schottky-like effect at low applied voltages, as it was observed on au-ta2o5-pt-si structures at pt electrode negatively biased [40]. this issue requires deeper investigation in a separate study on metal-insulator-metal structures. one of the possible approaches to this problem will be to use the multi-step trap-assisted tunneling model, as it was done in [41] for the metal-al2o3-si structures. fig. 2 illustration of the poole-frenkel conduction mechanism  the hoping conduction in the ta2o5 layer is of much lower importance because the poole-frenkel mechanism gives already much higher conductivity in ta2o5 then the hopping conductivity in sio2. specifically, when ta2o5 is polycrystalline, as is the case with the films studied here [42], the hopping conductivity is very weak, while the trap density (related to oxygen vacancies, grain boundaries etc.) becomes extremely high. therefore, it is reasonable to neglect the hopping conductivity. 2.2. differences between the cases of positive and negative gate in the case of the gate positively biased, the electrons that tunnel through the sio2 barrier enter the ta2o5 conduction band. they drift for a small distance, then they become trapped, but some new electrons are subsequently emitted from the traps and continue the transport, step by step, until entering the metal (fig. 3). e si high-k metal sio2 or sioxny physical modeling of ta2o5 based mos capacitors on si 263 fig. 3 conduction mechanisms ate positive gate in the case of the gate negatively biased, some electrons from the traps near the ta2o5/sio2 interface can move to the localized states in the sio2 layer, then by quantum diffusion to contribute to the hopping conduction. tunneling of electrons through the sio2 layer from the ta2o5 layer and of holes from the si substrate could occur. the usual assumption that the electron current gives the dominant contribution in this case is not valid, because the fowlernordheim and direct tunneling are possible where an electron gas from the metal of semiconductor is in contact with an sio2 surface [43]. there, the dominant part of the electrons moving towards this surface are reflected, while a small part tunnels through the sio2 layer entering the opposite electrode (direct tunneling) or a part of it entering its conduction zone (fowler-nordheim tunneling). in the case of an insulator, the density of the electrons in the conduction zone is practically zero and the electron tunneling is practically impossible. therefore only the holes from the substrate contribute to the tunneling current [44]. for enough high fields, the holes injected from the si substrate enter the valence band of the ta2o5 layer. because of the high trap density, after passing a small distance, they recombine with the electrons on the traps. special attention has to be devoted to the case of lower fields, where the holes can not tunnel to the valence band (fig. 4). by other authors [45] an attempt was made to describe a similar situation by the double barrier tunneling. fig. 4 conduction mechanisms ate negative gate e(-) e(-) poole-frenkel transport of electrons trapping of the electrons injected through sio2 into the high-k conduction band tunneling of electrons high-k metal si e(-) si high-k metal tunneling of holes poole-frenkel transport of electrons h(+) recombination of the electrons from the high-k traps with the holes injected through sio2 trapping of holes sio2 or sioxny sio2 or sioxny 264 n. novkovski our estimations in connection with the proposed comprehensive model showed feeble agreement with the experimental results if a double barrier tunneling mechanism is invoked. the reason is that the dominant conduction mechanism for the ta2o5 layer is the poole-frenkel and not the tunneling. once the charge carriers enter the forbidden gap of the tantalum pentoxide, they become trapped after a short distance, because the defect related trap density there is extremely high. tunneling is typical of the sio2 films and is observed in si3n4 films with very high quality, where the defect density is low and the injected charge carriers can pass long distances (of order of 100 nm) with a small probability to be trapped. in some cases (sio2 thinner than 4 nm) even a ballistic transport is observed [46]. the most probable route of the electrons injected into the ta2o5 forbidden gap is to be first trapped near the ta2o5/sioxny interface and then to recombine with electrons from other traps or from the conduction band (fig. 4). a similar situation can also appear in the case of low fields for the opposite gate polarity. 2.3. construction of the model the expressions for the current density due to the hopping conductivity in sio2 (jhc) is described by the following expression: ififhc ej  (1) where if is the temperature dependant hopping conductivity and eif is the filed in the interfacial layer. direct tunneling current density through the interfacial layer (jtd) is given by the following expression:                             2 3 if if if 3 2 if 2 td 11 3 28 exp 8 e d he qm e h q j    (2) and for the fowler-nordheim injection with (jfn)           if 3 2 if 2 fn 3 28 exp 8 he qm e h q j   , (3) where q is the electron charge, h is the planck’s constant, m* is the effective tunneling mass of charge carriers injected through the interfacial layer, dif is the thickness of the interfacial layer,  is the tunneling barrier height and eif is the electric field in it. the total current density flowing through the interfacial layer (jif) is given by the following expression: ifif ifif fn td hcif de de j j jj         , (4) and the voltage drop on the interfacial layer (eif) is ififif edv  . (5) physical modeling of ta2o5 based mos capacitors on si 265 the current density due to the poole-frenkel effect in the high-k layer (jpf) is described by the following expression: 3 pf hk hk hk 0 t 1 q j (0)e exp e rkt k          , (6) where hk(0) is a temperature dependent defect related constant having dimensions of conductivity, r is the degree of compensation [47], k is the boltzmann constant, 0 is the dielectric permittivity in vacuum, kt is the optical frequency dielectric constant of the high-k dielectric and ehk is the electric filed in it. the voltage drop on the layer (vhk) is given by: hkhkhk edv  , (7) where dhk is the thickness of the high-k dielectric layer. the numerical procedure consists in simultaneous computation of the two following quantities: the oxide voltage: ififhkhkifhkox ededvvv  (8) and the current density in steady state (kirchhoff’s laws) ifpf jjj  . (9) first the current density j = jif was determined for a given field eif in the interfacial layer. then the field in the high-k layer was computed as an inverse function of the current density jhk = j. at the end, the oxide voltage was calculated with the use of the expression (8). we intend to use minimum of fitting parameters. the defect density parameter for high-k layer was first chosen because it is dependent on the technological parameters and is difficult to be determined by independent methods. silicon dioxide layer thickness was also treated as a fitting parameter in a restricted range (2 to 3 nm) close to the measured value, because the small variations in it cause substantial variations in the result. later, these results were compared with independent measurements. the hoping conductivity was also treated as a fitting parameter, since there are no available data from independent experiments. because the different mechanisms do not exclude each other, they are considered in a single form for the entire measurement region; as we discussed in [48], this approach is unavoidable in the case of nano-layered dielectrics where the effects of contributions of different conduction mechanisms can not be separated but standard methods a single assuming dominant conduction mechanism in a given voltage range. in the case of al-ta2o5/sio2-si structures following typical values can be taken from the literature: tunneling electron mass in ultrathin sio2, me* = 0.61 me [49], where me denotes the mass of free electron; tunneling hole mass in sio2, mh* = 0.51 me; optical frequency dielectric constant of ta2o5, kt = n 2 = 2.1 2 = 4.4; tunneling barrier height for of holes in sio2; h = 4.70 ev [49]; tunneling barrier height for of electrons in sio2, e = 3.15 ev [50]; and compensation factor, r = 1 (we consider the poole-frenkel effect without compensation). 266 n. novkovski voltage on the stacked insulating layer (vox) can be calculated by using relations involving the flatband voltage (vfb) and the voltage drop in the semiconductor (vs): sfbgox vvvv  . (10) the value of the vfb was determined with the standard method which is not described here. a low value of the fixed charge density in the sio2 was assumed, i.e. the ideal value of the flatband voltage ( id fbv ) was used. this assumption will be discussed later, though it can be simply treated as an approximation that holds for insulating films of high quality, where the oxide charge density is fairly low. the voltage drop in si (vs) is connected with the electric field strength in the interfacial layer (eif) by the following expression:                                                                   si typen11 2 si typep11 2 ss 2 0 2 i si 0 s 2 0 2 is si 0 si ss ss kt qv e kt qv e n nktn kt qv e p n kt qv e ktp e kt qv kt qv kt qv kt qv if if     . (11) where si is the relative permittivity of silicon, if is the relative permittivity of the interfacial layer, n0 is the density of electrons in n-type silicon, p0 is the majority carrier density in p-type silicon and ni is the intrinsic carrier density in silicon. in strong inversion (positive gate for p-type substrate, negative gate for n-type substrate) the leakage current density reaches an almost saturated value of the order of magnitude 1 ma/cm 2 . this saturation is due to the exhaustion of the minority carriers in the substrate, due to the minority carrier extraction from the substrate (electrons for p-type and holes for n-type). namely, the maximum tunneling current density of the electrons from the substrate is limited by the thermal generation rate of electrons in the inversion region of si, similarly to the case of the diode reverse current. the values observed in our experiment are comparable to the values obtained for p-n si diode reverse currents for the voltages between 1 v and 10 v. 2.3. equivalent circuit combining above described model with the standard description of mis structures [51], a complete equivalent circuit of the considered structure can be constructed (fig. 5). diode (d) that is shown at the left end of the figure accounts for the effect of exhaustion of minority carrier in strong accumulation, as described above. diode orientation shown in the figure corresponds to an n-type substrate; for the case of p-type si substrate the orientation is reversed. physical modeling of ta2o5 based mos capacitors on si 267 fig. 5 equivalent circuit of the considered structure meanings of the symbols for physical quantities in fig. 5 are as follows: rl – serial resistance, rhk – voltage dependent resistance of the high-k layer, rif – voltage dependent resistance of the interfacial layer, rit – interface traps resistance, chk – capacitance of the high-k layer, cif – capacitance of the interfacial layer and cit – interface traps capacitance. capacitances of the layers of the dielectric stack are given by following expressions: hk 0hkhk d a c  (12) and if 0ifif d a c  , (13) where hk is the the relative permittivity of high-k layer and a is the electrode area of the capacitor. rl, rit, cif and cit are to be extracted from the c-g-v curves at various frequencies, while rhk and rif from i-v curves while using here described model. rhk and rif are both voltage dependent. 3. results 3.1. i-v curves first we discuss the values of the parameters obtained from the fitting of the theoretical to the experimental curve that can be obtained by independent methods. this is the case with the interfacial layer thickness (dif) and the band offsets (e and h) at the contact between si and sio2. for e and h values close to the literature data, 3.15 ev and 4.70 ev, respectively, have been obtained [44]. in [44], fitted value dif = 2.8 nm was obtained, close to the value of 2.6 nm measured by transmission electron microscopy. some of the results obtained from applying the model on the experimental results for i-v curves different for al-high-k/sioxny-si structures are displayed in table 2. several chk cif rhk rif rl rit cit gate substrate d u u cs 268 n. novkovski important features of the structures are clearly identified by the values of the important parameters. table 2 values of fitting parameters for al-high-k/sioxny-si structures r.f. sputtered ta2o5 on bare si at substrate temperature 493 k (unpublished data) annealed dif (nm) dhk (nm) e (ev) h (ev) hc ( -1cm-1) hk(0) (-1cm-1) not 2.90 27 2.50 3.30 110-16 3.9510-17 at 893 k 2.95 27 3.05 3.40 110-16 3.9510-15 at 1193 k 2.97 26 3.15 4.70 110-16 1.9810-12 ta2o5 obtained by thermal oxidation of ta in pure o2 at 873 k on bare si [44] gate dif (nm) dhk (nm) e (ev) h (ev) hc ( -1cm-1) hk(0) (-1cm-1) al 2.78 47 3.15 4.70 8.110-17 8.210-11 au 2.72 47 3.15 4.70 8.110-17 6.610-14 w 2.80 47 3.15 4.70 8.110-17 1.710-13 r.f sputtered ta2o5 at 493 k on si nitrided in nitrous oxide at temperatures ton [52] ton (k) dif (nm) dhk (nm) e (ev) h (ev) hc ( -1cm-1) hk(0) (-1cm-1) 973 2.65 17.3 2.92 ev 3.35 ev 410-15 3.310-8 1073 2.70 17.3 2.85 ev 3.50 ev 110-15 3.310-8 1123 2.80 17.2 2.80 ev 3.50 ev 310-15 3.310-8 r.f sputtered ta2o5 at 493 k on si nitrided in ammonia at temperatures ton [52] ton (k) dif (nm) dhk (nm) e (ev) h (ev) hc ( -1cm-1) hk(0) (-1cm-1) 973 2.70 17.3 2.60 ev 3.30 ev 110-15 3.310-8 1073 2.80 17.2 2.85 ev 3.25 ev 110-15 3.310-8 ta2o5 obtained by thermal oxidation of ta in pure o2 at 873 k on bare si [53] gate dif (nm) dhk (nm) e (ev) h (ev) hc ( -1cm-1) hk(0) (-1cm-1) al 1.84 8.1 3.15 4.4 110-15 210-9 w 2.04 8.0 3.15 4.7 210-15 810-11 au 2.05 8.0 3.15 4.7 510-16 810-11 metal-hf:ta2o5/sioxny-si structures (work in progress) gate dif (nm) dhk (nm) e (ev) h (ev) hc ( -1cm-1) hk(0) (-1cm-1) ag 2.56 5.44 2.6 4.2 210-16 210-16 w 2.24 5.76 2.6 4.2 710-15 210-14 tin 2.10 5.90 2.6 4.2 1.210-12 110-11 first, as is seen from data for r.f. sputtered ta2o5 on bare si at substrate temperature 493 k, unannealed films posses high defect density, as manifested by a high value of the parameter hk(0); annealing substantially reduces density of these defects. annealing also increases the band offsets, thus substantially reducing leakage currents. this is attributed to the improvement of stoichiometry of the interfacial silicon oxide. second, for ta2o5 obtained by thermal oxidation of ta in pure o2 at 873 k on bare si it is obtained that band offsets are those for sio2, indicating that thermally grown films posses an sio2-like interfacial layer. the parameter depending on the deffect density in the high-k layer, hk(0), is about two order of magnitude higher for reactive al gate than for the nonreactive au, w and tin gates, indicating that deposition of the reactive gate creates high amount of defects in the high-k layer. thickness of the layer is practically independent on the gate material for films as thick as 50 nm [44], and weakly dependent physical modeling of ta2o5 based mos capacitors on si 269 on the gate material in the case of films as thin as 10 nm or thinner (nanosized dielectric) [53]. low-field conductivity (hc) for films as thick as 50 nm is independent on the gate material [44], while for nanosized films it is somehow reduced in the case of reactive al gate [53]. therefore, we conclude that the reactive gate in the case of nanosized high-k dielectrics affects also interfacial layer. third, it is seen that substrate nitridation reduces band offsets [52]. with this effect alone, the nitridation would degrade leakage properties of the dielectric films. nevertheless, there is a more important beneficial effect of nitridation consisting in an increase of the relative permittivity of the interfacial layer and substantial decrease of the equivalent thickness with nitridation. as a result, leakage currents for same equivalent thicknesses are lower for films grown on nitrided substrates than for the films grown on bare substrates. detailed analysis of electrical and dielectric properties of different mos structures containing high-k dielectric grown on nitrided si substrate have been reported in several works [31],[52],[62]. the model is also applicable to the structures containing ta2o5 with different metals (one example is given in the last section of the table. 2). in addition, in [54] we have shown that the model described in this work is also applicable to the case of hfo2 high-k dielectrics, by fitting the experimental i-v curves obtained by other authors [55]. it is expected the same or slightly modified model to be applicable on various similar structures. recently, an analysis of leakage properties of al-ta2o5/sioxny-si structures based on a derived model has been published by other authors [56]. 3.2. effective capacitance standard methods for characterization of mos structures include measurement of c-v and g-v (or r-v) curves in parallel mode (i.e., cp-v and g-v or rp-v) [51]. an alternative approach is to use c-v and r-v curves obtained in serial mode (cs-v and rs-v). our extensive experience with metal/high-k/si structures suggests that better results are obtained when using serial mode in characterization of capacitance properties of the considered structures. this approach has been supported by additional studies of the ac capacitance and resistance measurements at various frequencies [57],[58]. based on the model described here an equivalent circuit (simplified equivalent circuit of that shown in fig. 5) for the capacitance in accumulation has been constructed and applied to describe experimental results for measured capacitances and resistances as a function of the signal frequency, both in parallel and serial mode [57]. impedance of the considered equivalent circuit (z) is given with the following expression: hk if l2 2 hk hk if if hk if 2 2 hk hk if if 1 (2 ) 1 (2 ) 1 11 2 1 1 (2 ) 1 1 (2 ) r r z r fc r fc r c c i f fc r fc r                   , (14) where f is the measurement signal frequency. for measurements in serial mode (at given gate voltage v in accumulation), corresponding effective serial capacitance (cs) and resistance (rs) are frequency dependent and given with following expressions: 270 n. novkovski 1 hk if s 2 2 hk hk if if 1 1 ( ) 1 1 (2 ( )) 1 1 (2 ( )) c c c f fc r v fc r v           (15) and hk if s l2 2 hk hk if if ( ) 1 (2 ( )) 1 (2 ( )) r r r f r fc r v fc r v       . (16) in [57] excellent fits to the experimental results for al-ta2o5/sio2 structures have been obtained when using expressions (15) and (16). detailed analysis for the c-v, r-v and c-v curves for metal(al,w,au)-ta2o5/sio2 structures, both in parallel and serial mode, have been reported in [51]. all the results obtained are consistent with the model described in this work. 3.3. stress-induced leakage currents in addition to the description of the leakage currents of fresh structures, this model has been successfully applied to the description of the stress-induced leakage currents. we dominantly studied the case of constant current stress. we have shown that i-v characteristics of stressed al-ta2o5/sio2 structures can be very well described by our model [59]. increase of the leakage currents with the stress has been attributed to the degradation of the interfacial layer by creation of high density of defects in a part of it. this part can be degraded to the point where it can be regarded as a conductive material where conduction occurs through percolation paths [59]-[61]. 4. conclusions comprehensive physical model for describing electrical and dielectric properties of mos capacitors containing high-k/(sio2,sioxny) dielectric stack has been described in details. corresponding equivalent circuit has been constructed and displayed. the proposed model describes very well mos structures containing ta2o5 based dielectric layers, both obtained with different technological procedures and with different doping. it has been also shown that the model can be used for other high-k dielectrics such as hfo2. based on the model, degradation of the dielectric properties of the high-k dielectric layer induced by a reactive metal gate, such as al, can be clearly distinguished from other effects. the model is applicable on fresh as well on high-field/current stressed samples, thus allowing analyzing the stress-induced leakage currents at medium fields. finer details of the effect of various technological processes on the electrical and dielectric properties of the considered structures can be extracted using the model. acknowledgement: this work was supported by macedonian ministry of education and sciences under contract 13-3573. physical modeling of ta2o5 based mos capacitors on si 271 references [1] j. zhang, z. li, h. zhou, c. ye and h. wang, “electrical, optical and micro-structural properties of ultrathin hftion films”, applied surface science, in press, http://dx.doi.org/10.1016/j.apsusc.2013.12.064. [2] c.ye, c. zhan, j. zhang, h. wang, t. deng and s. tang, “influence of rapid thermal annealing temperature on structure and electrical properties of high permittivity hftio thin film used in mosfet”, microelectronics reliability 54, 2014, pp. 388–392. (anneling) [3] s. chen, zh. liu, l. feng, x. che and x. zhao, “the dielectric properties enhancement due to yb incorporation into hfo2”, appl. phys. lett. 103 2013, pp. 132902 (4 pages). [4] g.lee, b.-k. lai, c. phatak, r. s. katiyar and o. auciello, “interface-controlled high dielectric constant al2o3/tiox nanolaminates with low loss and low leakage current density for new generation nanodevices”, j. appl. phys. 114, 2013, pp. 027001 (5 pages). [5] m. ali khaskheli, p. wu, r. chand, x. li, h. wang, sh. zhang, s. chen and yili pei, “structural and dielectric properties of ti and er co-doped hfo2 gate dielectrics grown by rf sputtering”, applied surface science 266, 2013, pp. 355–359 [6] b. toomey, k. cherkaoui, s. monaghan, v. djara, é. o’connor, d. o’connell, l. oberbeck, e. tois, t. blomberg, s.b. newcomb and p.k. hurley, “the structural andelectrical characterization of a hferox dielectric for mim capacitor dram applications”, microelectronic engineering 94, 2012, pp. 7–10 [7] z. essa, c. gaumer, a. pakfar, m. gros-jean, m. juhel, f. panciera, p. boulenc, c. tavernier and f. cristiano, “evaluation and modeling of lanthanum diffusion in tin/la2o3/hfsion/sio2/si high-k stacks”, appl. phys. lett. 101 2012, pp. 182901 (5 pages). [8] t. usui, s. a. mollinger, a. t. iancu, r. m. reis and f. b. prinz, “high aspect ratio and high breakdown strength metal-oxide capacitors”, appl. phys. lett. 101 2012, pp. 033905 (4 pages). [9] w.yang, q.-q. sun, r.-c. fang, l. chen, p. zhou, s.-j. ding and d.w. zhang, “the thermal stability of atomic layer deposited hflaox: material and electrical characterization”, current applied physics 12, 2012, pp. 1445–1447 [10] t. yu, c. jin, x. yang, y. dong, h. zhang, l. zhuge, x. wu and z. wu, “the structure and electrical properties of hftaon high-k films prepared by dibsd”, applied surface science 258, 2012, pp. 2953– 2958 [11] x. zhang, h. tu, y. guo, h. zhao, m. yang, f. wei, y. xiong, z. yang, j. du and w. wang, “atomic configuration of the interface between epitaxial gd doped hfo2 high-k thin films and ge (001) substrates”, j. appl. phys. 111, 2012, pp. 014102 (4 pages) [12] l. ning, f. yang, c. duan, y. zhang, jun liang and z. cui, “structural properties and 4f→5d absorptions in ce-doped lualo3: a first-principles study”, j. phys.: condens. matter 24, 2012, pp. 055502 (10 pages) [13] l. kornblum, b. meyler, c. cytermann, s. yofis, j. salzman and m. eizenberg, “investigation of the band offsets caused by thin al2o3 layers in hfo2 based si metal oxide semiconductor devices”, appl. phys. lett. 100, 2012, pp. 062907 (3 pages) [14] k.m.a. salam, h. fukuda and s. nomera, “effects of additive elements on improvement of the dielectric properties of ta2o5 films formed by metalorganic decomposition”, j. appl. phys. 93, 2003, pp. 1169–1175. [15] e. atanassova, n. novkovski, d. spassov, a. paskaleva and a. skeparovski, “time-dependent-dielectricbreakdown characteristics of hf-doped ta2o5/sio2 stack”, microelectron. reliab. 54, 2014, pp. 381–387. [16] e. atanassova, n. stojadinovic, d. spassov, i. manic and a. paskaleva, “time-dependent dielectric breakdown in pure and lightly al-doped ta2o5 stacks”, semicond. sci. technol. 28, 2013, pp. 055006– 055006-9 [17] e. atanassova, d. spassov, n. novkovski, and a. paskaleva, “constant current stress of lightly al-doped ta2o5”, materials science in semiconductor processing 15, 2012, pp. 98–107. [18] y. karmakova, a. paskaleva and e. atanassova, “interfacial layers in ta2o5 based stacks and constituent depth profiles by spectroscopic ellipsometry”, appl. surf. sci. 258, 2012, pp. 4507–4512. [19] e. atanassova, a. paskaleva and d. spassov, “doped ta2o5 and mixed hfo2–ta2o5 films for dynamic memories applications at the nanoscale”, microelectron. reliab. 52, 2011, pp. 642–650. [20] a. paskaleva, m. ťapajna, e. dobročka, k. hušeková, e. atanassova and k. fröhlich, “structural and dielectric properties of ru-based gate/hf-doped ta2o5 stacks”, appl. surf. sci. 257, 2011, pp. 7876–7880. [21] a. skeparovski, n. novkovski, e. atanassova, a. paskaleva and v. k. lazarov, “effect of al gate on the electrical behaviour of al doped ta2o5 stacks”, j. phys. d: appl. phys. 44, 2011, pp. 235103–235103-10. [22] i. manić, e. atanassova, n. stojadinović, d. spassov and a. paskaleva, “hf-doped ta2o5 stacks under constant voltage stress”, microelectron. eng. 88, 2011, pp. 305–313. [23] d. spassov, e. atanassova and a. paskaleva, “lightly al-doped ta2o5: electrical properties and mechanisms of conductivity”, microelectron. reliab. 51, 2011, pp. 2102–2109. 272 n. novkovski [24] n. novkovski and e. atanassova, “charge trapping during constant current stress in hf-doped ta2o5 films sputtered on nitrided si”, thin solid films 519, 2011, pp. 2262–2267. [25] e. atanassova, n. novkovski, a. paskaleva and d. spassov, “constant current stress-induced leakage current in mixed hfo2– ta2o5 stacks”, microelectron. reliab. 50, 2010, pp. 794–800. [26] a. paskaleva and e. atanassova, “evidence for a conduction through shallow traps in hf-doped ta2o5”, mat. sci. semicond. proc. 13, 2010, pp. 349–355. [27] e. atanassova, m. georgieva, d. spassov and a. paskaleva, “high-k hfo2–ta2o5 mixed layers: electrical characteristics and mechanisms of conductivity”, microelectron. eng. 87, 2010, pp. 668–676. [28] d. spassov, e. atanassova, n. novkovski, “electrical behaviour of ti-doped ta2o5 on n2o and nh3 nitrided si”, semicond. sci. technol. 24, 2009, pp. 075024–075024-10. [29] a. skeparovski, n. novkovski, e. atanassova, d. spassov and a. paskaleva, “temperature dependence of leakage currents in ti doped ta2o5 films on nitrided silicon”, j. phys. d: appl. phys. 42, 2009, pp. 095302–095302-8. [30] a. paskaleva, e. atanassova and n. novkovski, “constant current stress of ti-doped ta2o5 on nitrided si”, j. phys. d: appl. phys. 42, 2009, pp. 025105–025105-8. [31] n. novkovski, “analysis of the improvement of al-ta2o5/sio2-si structures reliability by si substrate plasma nitridation in n2o”, thin solid films 517, 2009, 4394–4401. [32] n. novkovski and e. atanassova, “a comprehensive model for the i-v characteristics of metal-ta2o5/sio2-si structures”, appl. phys. a 83, 2006, pp. 435–445. [33] e. rosenbaum and l. f. register, “mechanism of stress-induced leakage current in mos capacitors”, ieee trans. electron dev. 44, 1997, pp. 317–323. [34] m. houssa, m. tuominen, m. naili, v. afanas’ev, a. stesmans, s. haukka and m. m. heyns, “trapassisted tunneling in high permittivity gate dielectric stacks”, j. appl. phys. 87, 2000, pp. 8615–8620. [35] w. s. lau, l. zhong, allen lee, c. h. see, taejoon han, n. p. sandler and t. c. chong, “detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (ta2o5) films by zero-bias thermally stimulated current spectroscopy”, appl. phys. lett. 71, 1997, pp. 500–502. [36] w. s. lau, l. l. leong, t. han and n. p. sandler, “detection of oxygen vacancy defect states in capacitors with ultrathin ta2o5 films by zero-bias thermally stimulated current spectroscopy”, appl. phys. lett. 83, 2003, pp. 2835–2837. [37] n. novkovski, a. skeparovski and e. atanassova, “charge trapping effect at the contact between a highwork-function metal and ta2o5 high-k dielectric”, j. phys. d: appl. phys. 41, 2008, pp. 105302–105302-4. [38] l. stojanovska-georgievska, n. novkovski and e. atanassova, “charge trapping at pt/high-k dielectric (ta2o5) interface”, physica b: condensed matter 406, pp. 3348-3353 (2011). [39] l.s. georgievska, n. novkovski and e. atanassova, “charge trapping at low injection currents in (tin, mo, pt)/ta2o5:hf/sio2/si structures”, 2012 28th international conference on microelectronics, proceedings, miel2012, pp. 331-334 [40] f.-c. chiu, j.-j. wang, j. y. lee and s. c. wu, “leakage currents in amorphous ta2o5 thin films”, j. appl. phys. 81, 1997, pp. 6911-6915. [41] o. blank, h. reisinger, r. stengl, m. gutsche, f. wiest, v. capodieci, j. schulze and i. eisele, “a model for multistep trap-assisted tunneling in thin high-k dielectrics”, j. appl. phys. 97, 2005, pp. 044107– 044107-7. [42] e. atanassova, d. spassov, a. paskaleva, j. koprinarova and m. gueorguieva, “influence of oxidation temperature on the microstructure and electrical properties of ta2o5 on si”, microel. j. 33, 2002, pp. 907–920. [43] m. lenzlinger and e. h. snow, “fowler-nordheim tunneling into thermally grown sio2”, j. appl. phys. 40, 1969, pp. 278-283. [44] n. novkovski and e. atanassova, “injection of holes from the silicon substrate in ta2o5 films grown on silicon”, appl. phys. lett. 85, 2004, pp. 3142-3144. [45] c. chaneliere, j. l. autran and r.a.b. devine, “conduction mechanisms in ta2o5/sio2 and ta2o5/si3n4 stacked structures on si”, j. appl. phys. 86, 1999, pp. 480–486. [46] m. v. fischetti and d. j. dimaria, “hot electrons in sio2: ballistic to steady-state transport”, solid-st. electron. 31, 1988, pp. 629–636. [47] j. r. yeargan and h. l. taylor, “the poole-frenkel effect with compensation present”, j. appl. phys. 39, 1968, pp. 5600–5604. [48] n. novkovski, “limitations in the methods of determination of conduction mechanisms in highpermittivity dielectric nano-layers”, physica b: condensed matter. 398, 2007, pp. 28–32. physical modeling of ta2o5 based mos capacitors on si 273 [49] k. n. yang, h. t. huang, m. c. chang, c. m. chu, y. s. chen, m. j. chen, y. m. lin, m. c. yu, s. m. yang, d. c. h. yu and m. s. liang, “a physical model for hole direct tunneling current in p+ poly-gate pmosfets with ultrathin gate oxides”, ieee trans. electron dev. 47, 2000, pp. 2161-2166. [50] n. yang, w.k. henson, j.r. hauser and j. wortman, “modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in mos devices”, ieee trans. electron dev. 46, 1999, pp. 1464-1471. [51] d. k. shroder, semiconductor material and device characterization. hobokeen, new jersey: john wiley& sons, 2006, chapter 9, pp. 347–350. [52] n. novkovski, a. paskaleva and e. atanassova, “dielectric properties of rf sputtered ta2o5 on rapid theramlly nitrided si”, semicond. sci. technol. 20, 2005, pp. 233–238. [53] n. novkovski, “conduction and charge analysis of metal (al, w and au)-ta2o5/sio2-si structures”, semicond. sci. technol. 21, 2006, pp. 945–951. [54] aleksandar skeparovski and nenad novkovski, “on the nature of the high-k dielectrics leakage current reduction by postdeposition annealing”, j. optoelectron. adv. mat. 9, 2007, pp. 897–901. [55] w. j. zhu, t.-p. ma, t. tamagawa, j. kim and y. di, “current transport in metal/hafnium oxide/silicon structure” ieee electron device lett. 23, 2002, pp. 97–99. [56] s. huang, “oxygen annealing effects on transport and charging characteristics of al-ta2o5/sioxny-si structure”, ieee trans. electron. dev. 60, 2013, pp. 2741–2746. [57] n. novkovski, and e. atanassova, “frequency dependence of the effective series capacitance of metalta2o5/sio2-si structures”, semicond. sci. technol. 22, 2007, pp. 533–536. [58] n. novkovski and e. atanassova, “peculiarities of capacitance measurements of nanosized high-k dielectrics: case of ta2o5”, j. optoelectron. adv. mat.-symposia 1, 2009, pp. 398–403. [59] n. novkovski and e. atanassova, “origin of the stress-induced leakage currents in al-ta2o5/sio2-si structures”, appl. phys. lett. 86, 2005, pp. 1521041–52104-3. [60] n. novkovski, e. atanassova and a. paskaleva, “stress-induced leakage currents of the rf sputtered ta2o5 on n-implanted silicon”, appl. surf. sci. 253, 2007, pp. 4396–4403. [61] n. novkovski, e. atanassova and a. paskaleva, “model based analysis of electrical and wear-out characteristics of ultra-thin ta2o5/sioxny stacks on si”, proc. 26nd international conference on microelectronics, 10-14 may, 2008, vol. 2, pp. 533–536. [62] n. novkovski and e. atanassova, “dielectric properties of ta2o5 films grown on silicon substrates plasma nitrided in n2o”, appl. phys. a 81, 2005, pp. 1191–1195. 12698 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 1 18 https://doi.org/10.2298/fuee2501001k © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the role of the internet of things (iot) in the education department hossein kardanmoghaddam1, adel akbarimajd1, shahram jamali1, mahdi nooshyar1, shivamaghzi najafabadi2 1 department of electrical and computer engineering, university of mohaghegh ardabili, ardabili, iran 2department of computer engineering, birjand university of technology, birjand, iran orcid ids: hossein kardanmoghaddam https://orcid.org/0000-0002-9304-5093 adel akbarimajd https://orcid.org/0000-0002-7019-9655 shahram jamali https://orcid.org/0000-0003-2764-6373 mahdi nooshyar https://orcid.org/0000-0002-6786-7763 shivamaghzi najafabadi https://orcid.org/0009-0000-6542-4777 abstract. this research investigates the relationship between factors affecting the acceptance of iot technology in the najafabad education organization in the isfahan province of iran. one of the challenges many organizations face is assessing the level of acceptance of iot technology before its implementation. the research methodology in terms of purpose is applied research and descriptive survey in terms of data collection method, implemented in the field. the statistical population of this research includes all educational and non-educational staff under the supervision of the najafabad education department with 20,000 employees, which randomly selected a sample of 42 people. a questionnaire has collected the data of the present research. the applied questionnaire contains 23 questions (7 aspects) that a researcher has developed. the structural equation modelling (sem) and partial least squares (pls) techniques for hypotheses test and model suitability have been used to determine the acceptance of iot factors. also, smart-pls software is applied, that well-suited to conditions such as the independent variables coordination, data abnormalities and small sample size. the highest average of iot acceptance is associated with the perception of profitability, and the lowest average is related to social influence. the outputs of this research are that perception of usefulness, perception of simplicity as well reliance, have a positive influence on the reception of iot technologies in this educational system. nine hidden variables have been considered for this research. based on the performed analysis and the obtained results, it can be claimed that the most influential factor in the iot technology acceptance among the target population is building reliance and confidence in people, and the next factor is the use easiness of iot technology tools. a noteworthy finding in this research which almost everyone agrees on the usefulness of iot technology. key words: internet, iot, acceptance of iot, smart technologies received may 3, 2024; revised january 6, 2025; accepted january 18, 2025 corresponding author: hossein kardanmoghaddam ph.d. student, department of electrical and computer engineering, university of mohaghegh ardabili, ardabili, iran e-mail: kardanmoghaddam@uma.ac.ir https://orcid.org/0000-0002-6786-7763 https://orcid.org/0009-0000-6542-4777 2 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi 1. introduction the internet of things (iot) is a relatively novel paradigm and is rapidly developing in today’s modern and wireless communication scenarios. the ambient presence of various objects, such as rfid tags, sensors, stimulators, cell phones, etc., around the people is the prime idea of this concept. these various objects can communicate with each other and collaborate to achieve a common aim by unique addressing patterns. kevin ashton (1999) introduced the internet of things phrase for the first time. ashton declared this concept considering that every object has a digital identity, controlled and managed by computers [1-2]. iot pointed out to a network; this network is formed by communicating objects with each other. notably, the identity of every physical object is shown by a label. these objects not only can communicate with each other independently, and also they can exchange data [3]. the definition of cisco of iot can be expressed as interconnected physical objects. moreover, cisco uses the “internet of everything” for physical and virtual objects [4]. iot is formed based on the applications created by key technological empowerment. the mentioned empowerments are included radio-frequency identification (rfid), wireless sensors technology, smart technologies, and nanotechnology. changes in the physical status of connected objects can be detected and monitored by this developed internet in the real-time [3]. the definition of iot has been developed in the previous decades and consists of many fields. the potential to provide new capabilities and well economic experiences, and opportunities for different individuals and countries exist in iot [4]. in the iot paradigm, many objects surrounding us are settled in the network in one or more forms. sensor network technologies are being enhanced in invisible information and communication systems embedded in individuals’ surrounding environments to meet this new challenge; this leads to information generation that must be stored, processed, and provided in the integrated, efficient, and conveniently interpretable forms. nowadays, internet’s speed is enhancing, and also the accessibility to the internet is becoming easier and cheaper year by year. furthermore, other devices with built-in wi-fi are being created, and more advanced protocols (such as nb-iot) are being developed with higher speeds and lower energy consumption for iot. consequently, objects can connect to the internet faster and cheaper. the role of the evolution of the internet, bandwidth, and communication protocols is crucial in iot development. according to gartner research institution (2014), approximately 26 billion various devices will be connected to the internet by 2020 [5-6]. another research [7] is predicted that there will be approximately 50 billion connected devices to the internet by 2020. thereby, 5 to 6 devices are connected to the internet per person on average. connecting various devices and objects is novel progress on the internet. iot leads the fourth phase of the internet revolution [8]. iot is expected to be another revolution after world wide web, connecting the virtual and real worlds in the near future [9]. iot technology has influenced many scopes, especially smart cities, which dramatically impact communication between routine objects utilizing internet features and big data analysis [10]. activities in smart cities are accomplished by the advanced embedding of technology and data sets in infrastructures that interact with the iot. the acceptance of iot will have many potential benefits: improvement in operational processes, value creation, reduced cost and minimizing risk. these benefits result from transparency, tracking ability, compatibility, scalability, and flexibility that iot creates [11]. the role of the internet of things (iot) in the education department 3 nowadays, educational environments cannot follow their previous traditional methods. currently, novel technologies have led to the development and expansion of knowledge and awareness in educational environments. novel technologies have had the most dramatic and significant impact on educational environments. the results of the development of novel technologies, especially the internet of things, facilitate and improve educational activities. if these technologies are ignored and not used promptly, these advances cannot be used in a timely and complete manner in educational activities. iot has a wide range of applications; therefore, educational environments can use this technology at all levels. the role of iot in education includes energy storage, overseeing students’ health and security, optimizing classroom and educational environments, remote attendance of students, etc. educational systems have a wide range, and previous methods of educational technologies covered a limited dimension of them. the difference between iot technology and other previous educational technologies is that all these tools and facilities can become smart and used in educational and service activities by using various iot tools. the following benefits are pointed out based on the studies regarding the usage of iot in the educational class associated with behavioral and social analysis: real-time and fast feedback to teaching and learning processes, the possibility of interaction and sharing of obtained data from connected objects in class with other educational centers, automation of many timeconsuming activities in the class, the possibility of sending educational tips and materials for absence people, and many other applications. eventually, all of the mentioned benefits lead to improvement of learning processes and enhancement of the educational environment’s productivity. the iot should not be used only to facilitate daily activities but should also be used in educational environments for learning purposes. if there is sufficient knowledge of the function and effectiveness of iot technology in educational environments, the mentioned purposes will be achieved. otherwise, iot technology only facilitates the activity of teachers [12]. many developed countries have considered digital and network technologies in educational classes and study environments. the government policies of these countries are to provide access to the internet for every student, educational center, and family, support the various innovations of digital teaching, and connect everything to the internet. hence, many it experts believe that iot is a critical issue regarding learning and teaching in the 21st century, like books in the 19th century [13]. based on li et al. [14], the usage of iot in educational environments can improve teaching quality, learning, management, and enhancement of educational standards in the educational centers. abernathy [15] indicated that the utilization of web networks and the internet regarding education causes the reduction of costs, updating information, and development of educational methods and techniques. the iot technology will have beneficial and effective functions if it is used to improve learning and teaching processes and be acceptable by stakeholders in educational environments [16]. given the above, this research is analyzed the acceptance of iot in the najaf abad county’s (isfahan province) education department. the following issues are critical before the implementation of iot to examine the challenges and barriers that may exist in planning and implementing processes from the view of experts: use of iot in educational environments and opportunities that creates in these environments, provide the platforms for implementing this technology in isfahan province and entire iran, examine the facilities and requirements of iot acceptance among the staff of the organization. in this study, the second part outlines the research background and previous work conducted in the field of utilizing the internet of things (iot) in educational environments. the third part presents the research findings, while the fourth part introduces the structural equation model. finally, the last part discusses the conclusions and compares this research with similar studies. 4 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi 2. literature review zarrin, alimohammadi, and seyadat [17] (2018) pointed out the positive role of iot usage. they declared that iot would soon enter the entire aspects of the physical world, increase productivity in all of its dimensions, and be considered an attractive perspective for countries’ development and welfare. nataliia and elena (2015) [18] examined iot as a symbolic power source. they revealed that iot is an emerging power source and affects political and economic relations. in another study, jayavardhana et al. [19] indicated that iot is considered a key factor in different scopes and can evolve the computing and planning sources. vermesan and friess (2014) [20] examined iot and strategic innovation and found that iot is known as strategic innovation. khedmatgozar (2015) [21] analyzed the role of iot in knowledge management systems. based on this study, iot can improve the staff performance in the two sections of gathering data and entrance and exiting management in six particular scopes. bigdeli, nouruzi, and magham (2018) [22] indicated that the smartization of schools positively and significantly influences students’ creativity. ghaznavi, daeizadeh, and fallah(2017) [23] revealed that the desirable model of the syllabus based on smartization in iran consists of five factors: management system, teaching and learning environment, empowerment of human resources, and hardware and software factors. moreover, the study of h. k. moghaddam and mousavi (2020) [24] is another study regarding the impact of iot. they researched building smartization and proposed structures. the utilization of these structures has positive consequences, including improving and correcting the speed and accuracy of staff’s entrance and exit tracking, creating integrated mechanisms in the evolution of employees, etc. in the study kassab et al. (2020) [25], the impacts and challenges of the internet of things (iot) and its advantages and disadvantages in the field of education were examined. it was shown that the internet of things can have a positive impact on various principles of learning . the research yojna (2024) [26] discusses the benefits of cloud iot in education. it shows that smart classrooms can be significantly improved by integrating iot devices with cloud computing to create interactive and personalized learning environments. the study eriona et al. (2024) [27] examines current trends in smart classrooms and the use of iot. it explains how classrooms are evolving by integrating sustainable iot technologies and discusses the various benefits and challenges associated with adopting iot in education . in nuzula et al. (2024) [28], a brief review of the research conducted (about 176 research works) in the field of integrating the internet of things (iot) into smart education (in the period from 2012 to 2024) is presented. in this research, china is introduced as a leading country and organization in this field. the paper explains how the internet of things can strengthen adaptive learning theories guide policymakers in formulating national education strategies and improve practices in schools and classrooms by personalizing learning experiences and interactions. in abu et al. (2024) [29], the aim is to develop an electrical control system (for detecting student presence) for smart classrooms using iot technology. this system is designed to effectively manage electrical resources in educational classrooms and detect and monitor student presence, which is very important for optimizing energy consumption. in iwan et al. (2024) [30], investigated the integration of iot technology within educational settings. their findings demonstrated that iot technology can significantly enhance classroom management efficiency. furthermore, the study highlighted the crucial role of iot in modernizing educational practices and fostering improved learning outcomes. in saru the role of the internet of things (iot) in the education department 5 dhir et al. (2024) [31], explored the enhancement of teaching and learning within smart classrooms through the implementation of internet of things (iot) technology. the study's findings suggest that integrating iot within educational settings facilitates the creation of interactive learning environments, enabling students to engage more effectively with course material. in shayer et al. (2024) [32], successfully developed a prototype smart classroom utilizing a diverse array of technologies, including esp32-cam, fingerprint sensors, flame sensors, sim8001 modules, and arduino nano boards. this endeavor aimed to enhance classroom management and bolster classroom security. the research presented significant findings on the implementation of an iot-based smart classroom, with a particular emphasis on advanced learning environments and robust security protocols. in khong et al. (2024) [33], present the development of a smart internet of things (iot) system designed to analyze and enhance the classroom environment. the research emphasizes the integration of smart sensors for real-time monitoring, controlling electrical appliances, and minimizing power consumption. by leveraging user-friendly visualization tools, the system facilitates data analysis and fosters increased stakeholder engagement. this proposed solution aims to cultivate a favorable learning environment by determining optimal temperature and humidity levels, ultimately leading to improved academic outcomes and significant energy savings within educational institutions. in mohanty et al. (2024) [34], conducted a study examining the integration of internet of things (iot) technologies within smart classrooms. their findings revealed a significant increase in student engagement levels, from 60% to 85%, fostering increased collaboration and enhanced task completion efficiency. furthermore, the study underscored a positive correlation between iot integration and improved academic performance, while simultaneously acknowledging challenges such as technical difficulties and instructor resistance to iot adoption. in md alimul haque et al. (2024) [35], investigate the integration of internet of things (iot) technologies within e-learning systems, with a particular focus on smart classrooms. this research explores the utilization of devices such as electroencephalography (eeg) to monitor physiological responses, assess student engagement and attention during online lectures, and enable the detection of students' concentration levels. this information can then be leveraged to inform and refine teaching strategies, ultimately enhancing learning outcomes. in sharmin akter et al. (2023) [36], underscore the critical role of integrating diverse technologies, such as iot and ai, in fostering a truly smart classroom environment. this integration not only facilitates automation but also significantly enhances the overall learning experience for students. the research demonstrates the efficacy of the developed smart classroom features, including a predictive student attendance model. this model leverages the geographical location data of students' mobile devices in conjunction with classroom location data to accurately track student attendance. furthermore, the research presents a novel method for monitoring student attention by analyzing eye blink rates in relation to environmental sensor data. in the study terzieva et al. (2022) [37], the aim is to present the role of the internet of things (iot) in achieving smart environments across various fields, with special attention given to the concepts of smart schools and smart education. this study demonstrates how iot devices can contribute to a more efficient educational process within an optimal learning environment. in the research miloš djordjević et al.(2020) [38] the goal is to develop an intelligent system for storing data obtained from the microclimate in a smart faculty using internet of things (iot) technology and smart sensor nodes. this system enables the automatic control of environmental parameters within the school by measuring various environmental factors and regulating them without 6 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi human intervention. this system is based on: a group of built-in sensors, a microcontroller with a peripheral interface (pic) as a core, a server system, and a wireless internet using the global system of mobile telecommunications (gsm) module with general packet radio service (gprs) as a communication protocol. the significance of utilizing the internet of things (iot) lies in its high efficiency and productivity within educational environments, supported by extensive previous research on its application in various educational settings. therefore, this research aims to highlight the importance of implementing the internet of things in educational contexts. 3. findings the present study sample includes 42 people, 28 people are female (66.7%), and 14 people are male (33.3%). most of the people used in the study are over 50 years (31%). moreover, these people’s recorded service is over 15 years (54.8%), and they have postgraduate education (59.5%). the following table (table 1) is shown the demographic characteristics of people used in this study. according to table 1, the population of females is approximate twice the male population. the largest population of this study is related to people over 50 years. meanwhile, most of the people have over 15 years of recorded service. moreover, most people have postgraduate. table 1 demographic characteristic of people frequency percentage sex male 14 33.3 female 28 66.7 age less than 30 years 8 19.0 30-40 years 11 26.2 40-50 years 10 23.8 over 50 years 13 31.0 recorded of service less than five years 7 16.7 5-10 years 10 23.8 10-15 years 2 4.8 over 15 years 23 54.8 level of education diploma 0 0 associate degree 0 0 bachelor degree 17 40.5 postgraduate 25 59.5 the descriptive statistics of study variables are reported in table 2. the highest mean of iot acceptance is related to usefulness perceiving (16.60±2.253). in contrast, the lowest mean is related to social influence (9.98±1.316). the skewness and kurtosis of the variables are in the range of [-2, 2]. thereby, the distribution of the variables is normal. based on the results of the kolmogorov-smirnov test (table 3), the significance level for all of the variables is less than 0.05. consequently, none of the variables have a normal distribution. the role of the internet of things (iot) in the education department 7 table 4 shows the stochastic test of data. the significance level of all data is more than 0.05, except for perceiving simplicity of use. therefore, the stochastic data are acceptable, except for perceiving simplicity of use. table 2 descriptive statistics of variables variable mean standard deviation median mode variance minimum score maximum score skewness kurtosis usefulness perceiving 16.6 2.253 16 14 5.076 14 20 0.319 -1.313 perceiving the simplicity of use 12.69 3.626 11 9 13.146 9 19 0.443 -1.381 social influence 9.98 1.316 10 11 1.731 8 13 0.046 -0.753 reliance 10.45 1.533 10 10 2.351 8 13 0.073 -0.892 pleasure perceiving 11.95 1.545 12 11 2.388 9 14 0.811 -0.797 perceiving the behavior control 10.90 1.078 11 11 1.161 9 14 0.811 -0.797 technology acceptance 11.19 1.954 11 10 3.816 8 14 0.070 -1.231 table 3 kolmogorov-smirnov test results for assessing the normality of variables’ distribution result of the test usefulness perceiving perceiving the simplicity of use social influence reliance pleasure perceiving perceiving the behavior control technology acceptance kolmogorovsmirnov statistic 0.161 0.247 0.187 0.140 0.207 0.251 0.157 significance level 0.008 0.000 0.001 0.038 0.000 0.000 0.010 table 4 the results of data stochastic result of the test usefulness perceiving perceiving the simplicity of use social influence reliance pleasure perceiving perceiving the behavior control technology acceptance test value (mean) 16.60 12.69 9.98 10.45 11.95 10.90 11.19 values greater than the mean 23 22 16 22 20 16 23 values smaller than the mean 19 20 26 20 22 26 19 z statistic -1.044 -2.647 -1.098 -0.768 -0.455 -1.430 -1.359 significance level 0.297 0.008 0.272 0.442 0.649 0.153 0.174 structural equation modeling and smart pls software are used in this study. the mentioned software is compatible with the conditions of multicollinearity of independent variables, non-normal data, and small sample size. 8 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi 4. use of the structural equation model this study uses the structural equation technique to analyze the structural relationships for data analysis. this technique is based on two patterns: measurement and structure. the measurement pattern pointed out how the measurement variables are gathered in the theoretical framework formation and considers related issues of structures’ reliability and validity. notably, the smart pls software is used. the smart pls software examines two models simultaneously. the external model (measurement model) assesses the relationship among explicit variables (the external model examines the relationship between items with the related variable to that item). the internal model (structural model) evaluates the relationship between latent variables and other latent variables (examines the relationship among variables. explicit variables are rectangular variables, which are under the components of the latent variable. the shape of the latent variables is oval. at this stage, the measurement model is presented to perform the research and examine the relationship between the aim of the research and each factor. indeed, estimation of validity and reliability will assess the measurement models based on considered indicators in the external models. the structural model (internal model) can be examined if the validity and reliability of measurement models are confirmed. the measurement model results are shown in the form of cronbach’salpha coefficient index, combined reliability, and average variance extracted. any item with a factor loading of less than 0.04 is excluded from the analysis to ensure validity. given fig. 1, factor loading greater than 0.4 is used for analysis. table 5 summarizes the final results. fig. 1 standard factor loading of the study’s hypothesis test the role of the internet of things (iot) in the education department 9 table 5 results of explicitly variables’ factor loading variable number of items factor loading significance usefulness perceiving 1 0.729 accept 2 0.563 accept 3 0.707 accept 4 0.784 accept perceiving the simplicity of use 5 0.776 accept 6 0.795 accept 7 0.911 accept 8 0.923 accept social influence 9 0.985 accept 10 -0.496 reject 11 -0.243 reject reliance 12 0.955 accept 13 0.131 reject 14 0.439 accept pleasure perceiving 15 0.653 accept 16 0.767 accept 17 0.787 accept perceiving the behavior control 18 -0.168 reject 19 0.359 reject 20 0.999 accept technology acceptance 21 0.709 accept 22 0.885 accept 23 0.889 accept based on table 5, the modified model is illustrated in fig. 2 after excluding the factor loading of less than 0.4. as aforementioned, this study uses cronbach’s alpha index, combined reliability, and average variance extracted to evaluate the validity of structure. if the structure has the highest common variance with its markers (relative to the share of that structure with other structures) in a specific model, it is a suitable indicator for external model evaluation. the average variance extracted (ave) (the average of common variance between structure and its markers) is proposed for evaluation. this indicator shows the validity of the measurement tool, and it assumes that the latent variable has the highest common variance with determined markers compared to other latent variables. the scholars proposed the average variance extracted of 0.5 and more; the considered structure presents about 50% or more of its marker variances. moreover, cronbach’s alpha above 0.7 is recommended for reliability acceptance. notably, the questionnaire has moderated reliability if cronbach’s alpha is between 0.5 and 0.7. however, the combined reliability (cr) index is preferred to cronbach’s alpha index. the desirable value of cr is between 0.6 to 0.7 in the exploratory research, while this value in more advanced research is between 0.7 to 0.9. the coefficient of determination (r2) indicates what percentage of the dependent variable changes are explained by the independent variables. 10 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi fig. 2 the model in the form of parameter confirmation indeed, this coefficient indicates that, in total, what percentage of the dependent variable behavior is predicted by the independent variable. the range of r2 is between zero to one and is evaluated with three amounts: 0.19 (weak), 0.33 (medium), and 0.67 (strong). the study will not have scientific value if its r2 is less than 0.19. based on table 6, the considered data of questionnaires has high reliability. further, the proposed structures have high validity and confirm the measurement model (table 6). table 6 evaluation of the structure validity variable cronbach’s alpha combined reliability average variance extracted coefficient of determination usefulness perceiving 0.703 0.788 0.485 0.353 perceiving the simplicity of use 0.876 0.914 0.729 --- social influence 1.000 1.000 1.000 --- reliance 0.417 0.689 0.568 --- pleasure perceiving 0.605 0.781 0.545 --- perceiving the behavior control 1.000 1.000 1.000 --- technology acceptance 0.777 0.870 0.692 0.672 this study uses structural equation modeling (sem) and the partial least squares (pls) method to check the test hypothesis and fitness of the model. the internal model (structural model) measures the relationship between latent variables with other latent variables. table 7 reports the results of the hypothesis test. the role of the internet of things (iot) in the education department 11 table 7 results of the study’s test hypothesis path coefficient t-value test result usefulness perceiving has a positive impact on the iot technology acceptance. 0.234 1.322 reject perceiving the simplicity of use has a positive impact on iot technology acceptance. 0.410 1.779 reject perceiving the simplicity of use has a positive impact on usefulness perceiving. 0.243 1.503 reject reliance has a positive impact on iot technology acceptance. 0.617 2.620 accept reliance has a positive impact on usefulness perceiving. 0.410 1.779 reject social influence has a positive impact on iot technology acceptance. 0.212 1.616 reject pleasure perceiving has a positive impact on iot technology acceptance. 0.222 1.563 reject behavioral control has a positive impact on iot technology acceptance. -0.101 0.737 reject the hypothesis at the significance level of 0.05 is confirmed if the t-value is out of the (-1.96, 1.96) range. fig.3 and 4 show the results of this section. fig. 3 results of the structural model 12 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi fig. 4 the study’s model in the significance of parameters this study uses validity examination (including examination of subscription validity and redundant validity examination index) to examine the quality or validity of the model. the subscription index evaluates each block of measurement model quality. the redundant index is also called stone-geiser (q2). the mentioned index measures the structural model quality for each endogenous block by considering the measurement model. if the redundant index is positive, the quality of the measurement and structural models are suitable and acceptable. the values of each indicator related to dependent and independent variables are reported in table 8. as can be seen, indicators are positive, zero, or more than zero. moreover, tables 5 and 6 show the values of these indicators. table 8 the values of subscription validity index and redundant validity index variable subscription validity redundant validity usefulness perceiving 0.162 0.100 perceiving the simplicity of use 0.534 0.000 social influence 1.000 0.000 reliance 0.058 0.000 pleasure perceiving 0.121 0.000 behavioral control 1.000 0.000 technology acceptance 0.392 0.405 the role of the internet of things (iot) in the education department 13 fig. 5 subscription validity examination index model (cv com) fig. 6 redundant validity examination index model (cv red) 14 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi 5. conclusion based on the conducted studies and global community development, if iot applications are not used or welcomed, our current society will eventually lag behind other societies; this is an understandable and undeniable debate in education. in the current situation, most of the education of students is performed on the internet platform. therefore, people are forced to utilize smart devices for teaching. thus, it is an appropriate opportunity for people to become acquainted with the novel educational system. teachers will have more tools and more effective teaching methods. on the other hand, students’ interest in learning will enhance, and they can use their time optimally. notably, the usage of iot technology can help to environment preserving gradually. achieving all of the mentioned purposes needs infrastructures; providing these infrastructures is beyond the ability of students and teachers. examination and identification of effective factors for acceptance of iot technology in the education system of the mentioned county is the main purpose of this study. this study considered nine latent variables. the overall results based on the analysis and obtained outcomes are as follows: among the target community, the most effective factor in the acceptance of iot technology is the creation of reliance and assurance. in other words, people need to be confident that using this technology will protect their privacy entirely and appropriately and lead them to the desired result. facilitating the use of this technology’s tool is the next factor. in other words, people can use the positive applications and easily use them through short-run learning and study. there was a consensus among almost all people regarding the usefulness of this technology, which is a significant result. consequently, people have perceived the usefulness of this technology and its positive impact on the process of work. thus, this knowledge is acceptable in people’s minds, and now is the time for practical use. there are some related studies regarding the application of this technology in other sections, such as health and education. the closest research to this study is the study of shekari and darand (2018) [39]. using a quantitative research method, they analyzed the most important iot applications in the yazd administration system (daily operational time, control of the staff’s entrance and exit). the present study results are consistent with the mentioned research results and confirm the effectiveness of the iot in the educational system. due to issues such as the novelty of the present study, difficulties in conducting the research process were not far from the mind. it is worth noting that the researchers of this study worked hard to eliminate barriers and limitations. it is valuable to point out the results of other related studies regarding school smartization. nodehli & rezaekalantari (2016) [40] found that the smartization of school has a role in the learning quality dimensions (attitudes, mental habits, expansion and correction of knowledge, acquisition, and intertwining of knowledge, and the significant use of knowledge). foroghi & yarmohammadian(2016) [41] revealed that changes in the cultural infrastructure are required to make schools smarter so that people with lifetime learning can be trained. they also declared that the speed and accuracy of learning and designing a learning environment in accordance with the students’ talent are obtained by smartization. in another study, shahzari (2017) [42] indicated that the most impact on educational planning and evaluation is related to information and communication technology, among the other qualitative variables. our results are consistent with their results regarding creating appropriate evaluation methods with smartization. based on dalir & hosseininasab(2015) [43], the educational progress and motivation in the students of smart schools are higher than in normal schools. moreover, the the role of the internet of things (iot) in the education department 15 present study results are consistent with theirs regarding enhancing students’ motivation. bigdeli et al. (2018) [44] revealed that school smartization positively and significantly influences the students’ creativity. the role of new information and communication technologies in facilitating and improving education quality should be considered to increase students’ learning quality, abandon teacher-oriented and memory-oriented learning methods, and create methods to increase students’ activity, thoughts, creativity, and responsibility. gonzalez, organero & kloss (2018) [45] indicated that the iot has features such as motivation and happiness. also, iot allows teachers to be taught based on the student’s talents, increasing the students’ learning quality. notably, their results are consistent with the results of this study. hosseini & narugheh (2019) [46] indicated that surveillance systems (such as closed camera television) could increase the city’s social security and enhance the government’s performance regarding the out-of-control environments. cloud computing and iot are two very distinct technologies that form part of our lives. the significant role of these two technologies on the internet and expanding their use is expected in the future. eventually, we propose to expand the use of this technology application and provide the related infrastructures. the biggest challenges of the target community are difficulties in using this technology in some cases and a lack of comprehensive learning of this technology (many people learned to work with related hardware through self-education). finally, we will briefly declare some strategies for increasing the combination of the educational system with iot technology: ▪ learning the use of new technologies to specialists of devices (such as cloud for storage and process information); ▪ installation of qr and rfid codes on documents for better management and preventing their loss; ▪ use of rfid labels, sensors, and standard barcodes for tracking people’s requirements to more instantaneous transparency of supply chain; ▪ installation of sensors in the vital organizations of the county and vital organization sections to get essential information through sensors in crisis time and decides for crisis management; ▪ free learning to people regarding using of the internet and smart devices; ▪ providing the specific and applicable apps for smartphones to present required services to every organization; ▪ considering free internet sites and connecting them to the government’s network for access of people to services in most parts of city and villages; ▪ installation of sensors in administrative equipment and tools to faster identification of equipment failure and on-time declaration of them to the director to reduce costs and energy; ▪ smartization of lighting, heating, and cooling systems of administrations using climate detection sensors; ▪ use smart boards for smart education. the mentioned boards can connect every student to the board wirelessly and use it to present research, assignments, etc. meanwhile, teachers can use it for teaching geometric shapes, video files, etc.; ▪ qr codes should be placed in students’ textbooks so that they can scan them and watch online learning videos at any time. like any other study, the researcher faced limitations due to the small sample size. if a larger sample size (e.g., the entire educational staff of isfahan province or even all educational staff in iran) had been available, more accurate results could likely have been 16 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi obtained. the findings of the present study illustrate the relationship between the factors influencing the adoption of iot technology in the najafabad education organization in isfahan province. therefore, generalizing these results to other educational centers in different cities and provinces should be approached with caution and a thorough understanding. additionally, since this study was conducted on personnel working in a city in central iran, its findings cannot be generalized to the entire education-related community across the country. references [1] т. goetz, "harnessing the power of feedback loops", wired, june 2011. [2] k. ashton, "that 'internet of things' thing", rfid journal, june 2009. [3] i. peña-lópez, strategy and policy unit of international telecommunications union. geneva, switzerland: itu internet reports, 2005. [4] s. gul, m. asif, s. ahmad, m. yasir, m. majid, m. sheraz et al., "a survey on role of internet of things in education", int. j. comput. sci. netw. secur., vol. 17, no. 5, pp. 159-165, 2017. [5] l. babun, k. denney, z.b. celik, p. mcdaniel, and a.s. uluagac, (2021) "a survey on iot platforms: communication, security, and privacy perspectives. computer networks", computer networks, vol. 192, p. 108040, 2021. [6] 2013. [online]. available: http://www.gartner.com/newsroom/id/2636073. [7] k. pinka, j. kampars and v. minkevičs, "case study: iot data integration for higher education institution", inf. technol. manag. sci.. vol. 19, no. 1, pp. 71-77, 2016. [8] j. manyika, m. chui, j. bughin, r. dobbs, p. bisson, and a. marrs, disruptive technologies: advances that will transform life, business, and the global economy. (vol. 180), mckinsey global institute san francisco, ca, usa, 2013. [9] c. saran, (2013). internet of things to power classroom education, from https://www.computerweekly.com/ news/2240203884/internet-ofthings-to-power-classroom-education. [10] l. banica, e. burtescu and f. enescu, "the impact of internet-of-things in higher education.", sci. bull.-econ. sci., vol. 16, no. 1, pp. 53-59, jan 2017. [11] m. chui, m. loffler and r. roberts, the internet of things. mckinsey global institute; 2010. [12] f. c. chang, d. k. chen, h. c. huang, "future classroom with the internet of things-a serviceoriented framework", j. inf. hiding multim. signal process., vol. 6, no. 5, pp. 869-881, sep 2015. [13] m. selinger, a. sepulveda and j. buchan, education and the internet of everything: how ubiquitous connectedness can help transform pedagogy. white paper, cisco, san jose, ca, 2013. [14] s. li, l. d. xu and s. zhao, "the internet of things: a survey", inf. syst. front., vol. 17, pp. 243-259, 2015. [15] b. nadel, school building on outopilot, 2017. [online] available at: http://www.distrctadministration.com [16] m. r. veeramanickam and m. mohanapriya, "iot enabled futurus smart campus with effective elearning: i-campus", gstf j. eng. technol. (jet), vol. 3, no. 4, pp. 81-87, apr. 2016. [17] s. zarrin, m. alimohammadi, and s. h. seyadat, "the future of modern architecture: an innovative model for business on the platform of cloud computing and iot integration", j. technol. growth, vol. 14, no. 54, 2018, [in person]. [18] l. nataliia and f. elena, "internet of things as a symbolic resource of power", procedia soc. behav. sci., vol. 166, pp. 521-525, 2015. [19] j. gubbi, r. buyya, s. marusic and m. palaniswami, "internet of things (iot): a vision, architectural elements, and future directions", future gener. comput. syst., vol 29, no 7, pp. 1645-1660, 2013. [20] o. vermesan and p. friess, internet of things from research and innovation to market deployment (vol. 29), aalborg: river publishers, 2014. [21] h. r. khedmatgozar, "the role of internet of things (iot) in knowledge management systems (case study: performance management of yazd municipality staff)", j. inf. technol. manag., vol. 7, no. 3, pp. 553-572, 2015. [22] z. bigdeli, d. nouruzi and h. r. magham, "the impact of school smart technologies on student creativity", j. innov. creat. humanities, vol. 7, no. 4, pp. 241-262, 2018, [in person]. [23] m. ghaznavi, h. r. daeizadeh, v. fallah and z. elahi, "a comparative study of smarting in the curriculum of malaysia, australia and finland and providing a model for iran", new approach educ. manag., vol. 10, no. 1, pp. 69-84, 2017, [in person]. https://www.wired.com/magazine/2011/06/ff_feedbackloop/all/1 http://www.rfidjournal.com/article/view/4986 the role of the internet of things (iot) in the education department 17 [24] h. kardanmoghaddam, s. hadimousave and h. samepour, "investigating the effective factors in the adoption of iot technology in building intelligence", in proceedings of the 4th national conference on computer, information technology and applications of artificial intelligence, ahvaz, iran, 2021, [in person]. [25] m. kassab, j. defranco and p. laplante, "a systematic literature review on internet of things in education: benefits and challenges", j. comput. assisted learning, vol. 36, no. 2, pp. 115-127, apr. 2020. [26] y. arora, "integration and applications of cloud iot in the education sector" in integration of cloud computing and iot. chapman and hall/crc 230-246, 2024. [27] e. cela, m. fonkam., p. eappen and n. rao vajjhala. "current trends in smart classrooms and sustainable internet of things" in designing sustainable internet of things solutions for smart industries, pp. 1-26. hershey, pa, igi global, 2025. [28] n. firdausi, r. anita, s. zahroh, m. a. apologia, a. masykuri and g. a. rahmawan, "the academic landscape of iot in smart education: a review of trends and mapping", in proceedings of the 2024 international conference on ict for smart society (iciss), bandung, indonesia, 2024, pp. 1-6. [29] a. bakar ibrahim, n. shamsudin, m. helmi ab majid, s. dzulkifly, y. abdullah, m. ikhsan setiawan, "smart classroom: a development of electrical control system with internet of things", journal of ict educ., vol. 11, no. 1, pp. 103-114, 2024. [30] i. adhicandra, f. nidaul, khasanah, m. muhammadiah, s. sabri, c. halim maharaja, "the impact of integrating internet of things (iot) technology in learning on class management efficiency", j. comput. sci. advanc., vol. 2, no. 3, pp. 136-157, 2024. [31] s. dhir., a. v. maheshwari and s. sharma, "improving teaching-learning through smart classes using iot", in advances in educational technologies and instructional design book series, pp. 107-131, 2024. [32] k. s. shayer, m. h. medul, m. badoruzzaman, j. islam shuvo, m. rabbu and f. m. mahmudul haque, "an integrated framework for enhanced learning environments: iot-driven smart classrooms with multi-layered security protocols and adaptive infrastructure", in proceedings of the 2024 international conference on advances in computing, communication, electrical, and smart systems (icaccess), dhaka, bangladesh, 2024, pp. 1-6. [33] k.-y. tan, k.-w. ng and k. ramasamy, "classroom environment analysis via internet of things", j. inf. web eng., vol. 3, no. 2, pp. 19-36, june 2024. [34] a. k. mohanty, s. v. a. kumar, r. thongam, s. r. kawale, a. k. jakkani and v. g. vani, "enhancing classroom engagement through iot-enabled smart learning environments", shodhkosh j. vis. per. arts, vol. 5, no. 1, pp. 1003-1010, jan. 2024. [35] m. a. haque, s. ahmad, m. a. hossain, k. kumar., m. faizanuddin, f. islam., s. haque, m. rahman, s. marisennayya and j. nazeer. "internet of things enabled e-learning system for academic achievement among university students", e-learning and digital media, 2024. [36] s. akter and a. asaduzzaman, "internet of things and artificial intelligence enabled smart classroom", in proceedings of the 2023 6th international conference on electrical information and communication technology (eict), khulna, bangladesh, 2023, pp. 1-6. [37] v. terzieva, s. ilchev and k. todorova, "the role of internet of things in smart education", ifacpapersonline, vol. 55, no. 11, pp. 108-113, jan. 2022. [38] m. djordjević, b. jovičić, s. marković, v. paunović, d. danković, "a smart data logger system based on sensor and internet of things technology as part of the smart faculty", journal of ambient intelligence and smart environments, vol. 12, no. 4, pp. 359-373, 2020. [39] h, shekari and k. darand, "the most important applications of internet of things in yazd administrative system", sci. technol. policy lett., vol. 8, no. 3, pp. 77-89, nov. 2018. [40] a. akbari nodehi and m. rezae kalantari, "the role of school smartization on the learning quality of neka elementary school students", j. res. planning, vol. 2, no. 24, pp. 74-67, 2016, [in person]. [41] m. kamyabi, a. a. foroghi, and m. h. yarmohammadian, "identifying the essential changes in the cultural infrastructure to move towards lifelong learning: the view of the professors", j. qualitative res. health sci., vol. 7, no. 1, pp. 60-71, 2018, [in person]. [42] h. g. shahzari, "the impact of information and communication technology on improving the quality of higher education in iran: an analytical conceptual model", new approach educ. manag., vol. 3, no. 35, pp. 48-65, 2017, [in person]. [43] n. dalir and s. d. hosseni nasab, "a comparative study of academic achievement and progress motivation in elementary and smart elementary school students in tabriz", j. educ. evaluation, vol. 29, pp. 31-42, 2015, [in person]. [44] z. bigdeli, d. nouruzi and h. r. magham, "the impact of school smart technologies on student creativity", j. innov. creat. humanities, vol. 7, no. 4, pp. 241-262, 2018, [in person]. https://content.iospress.com/journals/journal-of-ambient-intelligence-and-smart-environments https://content.iospress.com/journals/journal-of-ambient-intelligence-and-smart-environments 18 h. kardanmoghaddam, a. akbarimajd, s. jamali, m. nooshyar, s. najafabadi [45] g. r. gonzalez, m. m. organero and c. d. kloos, "early infrastructure of an internet of things in spaces for learning", in proceedings of the 2008 8th ieee international conference on advanced learning technologies, 2008, pp. 381-383. [46] s. n. hosseini and n. narougheh, "explain and analyze the increase of social security in the light of the application of intelligent monitoring system", soc. syst. res. quaterly, vol. 11, no. 1, pp. 119-142, 2019, [in person]. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 155 155 https://doi.org/10.2298/fuee1801155e retraction mohammad maghsoudloo, hamid r. zarandi parallel execution tracing: an alternative solution to exploit under-utilized resources in multi-core architectures for control-flow checking. facta universitatis, series: electronics and energetics (fu elec energ), vol. 29, no 2, june 2016, pp. 243 260. doi: 10.2298/fuee1602243m  the article: parallel execution tracing: an alternative solution to exploit under-utilized resources in multi-core architectures for control-flow checking. mohammad maghsoudloo, hamid r. zarandi. facta universitatis, series: electronics and energetics, vol. 29, no 2, june 2016, pp. 243-260, doi: 10.2298/fuee1602243m, repeats 62% data already published in: an efficient adaptive softwareimplemented technique to detect control-flow errors in multi-core architectures. mohammad maghsoudloo, hamid r. zarandi, navid khoshavi. microelectronics reliability, vol. 52, issue 11, november 2012, pp. 2812-2828, doi: doi.org/10.1016/j.microrel.2012.03.033 without any referencing. link to the retracted article  doi: 10.2298/fuee1602243m received november 9, 2017 http://www.sciencedirect.com/science/article/pii/s0026271412001175#! http://www.sciencedirect.com/science/article/pii/s0026271412001175#! http://www.sciencedirect.com/science/article/pii/s0026271412001175#! http://www.sciencedirect.com/science/article/pii/s0026271412001175#! https://doi.org/10.1016/j.microrel.2012.03.033 http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/981 facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 307-322 https://doi.org/10.2298/fuee2102307z © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters emilija živanović, marija živković, milić pejović faculty of electronic engineering, university of niš, serbia abstract. the results of the reliability testing of littelfuse and epcos gas-filled surge arresters for different overvoltages under dc discharge will be presented in this paper. the static breakdown voltage of these gas components was estimated using voltage increase rates ranging from 1 to 10 v/s. a detailed statistical analysis of experimental data has also been done. the delay time of these components for different nominal overvoltages has been investigated as an additional aspect important for component reliability. in addition, the delay time method was used as a statistical method which can give neither ion nor neutral active states number density in the glow and afterglow. it can be employed for qualitative observation of ions and neutral active states decay in the afterglow to such low concentrations where the other methods cannot be applied. finally, a comparison has been done between the characteristics of two gas-filled surge arresters which have the same nominal overvoltage (littelfuse and epcos) from different manufacturers. key words: gas-filled surge arresters, nominal overvoltage, delay time, static breakdown voltage 1. introduction efficient overvoltage protection of electronic components and systems is very important for their proper operation. the gas-filled surge arresters (marked as gfsa in this paper) are non-linear components used in overvoltage protection. in literature it is known as surge voltage protector or gas discharge tube. overvoltage is a phenomenon where the potential of one point of a component or device in relation to the point of zero potential is greater than allowed. overvoltage above a certain value can endanger the safety of people who operate the devices, as well as damage the devices themselves. besides, overvoltage above the permitted levels can lead to permanent or temporary damage to certain electronic components and devices and to the appearance of noise in received october 30, 2020; received in revised form march 3, 2021 corresponding author: emilija živanović faculty of electronic engineering, aleksandra medvedeva 14, 18115 niš, serbia e-mail: emilija.zivanovic@elfak.ni.ac.rs 308 e. živanović, m. živković, m. pejović the transmission signals. atmospheric discharges, electrostatic discharges, commutation overvoltage, radar pulses and electromagnetic pulses of a nuclear explosion can cause overvoltage existence. these types of discharges significantly affect the telecommunication lines through which they damage components. of all the types of overvoltage, atmospheric discharge is the most dangerous because its occurrence is unpredictable. overvoltage protection elements can be divided with respect to the operating voltage type into linear and nonlinear according to the manner of applying voltage on them, when the current through them increases. linear elements for overvoltage protection are electric filters, whose most sensitive elements are capacitors. nonlinear elements for overvoltage protection are used more than linear ones and they can be divided into three groups according to the manufacturing technology and the principle of operation. these are transient suppresser diodes (tsds), metal оxide varistors (movs) and gas-filled surge arresters (gfsa). in order to protect against overvoltage, various combined (hybrid) schemes are sometimes used [1]. today, the most widely used gfsa consists of two or three electrodes that are enclosed in a ceramic or glass housing [1]. the distance between the electrodes is the order of a millimeter or part of a millimeter. as the insulating material, either noble gases (argon, neon, krypton or xenon) or their mixtures at pressures from 100 pa to 70 kpa are used. the major drawbacks in gfsas application are their delay time and cut off delay upon voltage disconnection as well as relatively large deviation in breakdown voltage, which goes up to 20% with respect to values usually found in datasheets [2,3]. time delay method proved to be a valuable tool for littelfuse gfsa reliability testing [4]. the continuation of our research relates to a detail analysis of these gas components and further extends to similar components manufactured by epcos at the same operating voltage of 230 v. on this occasion, a similar analysis was performed with the possibility to comparing the new results with previously used components as well as with characteristics from the datasheet [2,3]. the static breakdown voltage was estimated for all used samples by discretized dynamic method. in addition, the results of testing the reliability of these components, which implies determining the components’ static breakdown voltage and delay time for the different overvoltage, as well as the different relaxation time, will be also shown. further, the influence of overvoltage on the reliability of gfsa will represent, as well as a detailed statistical analysis of the obtained experimental results. 2. related work previous research on gfsa has reflected that the most commonly examined types of it were siemens and citel. also tests performed in the field of ionizing radiation are widely represented in the literature [5,6]. the possibility of stabilizing the static working point of the gfsa by adequately selecting the parameters that are important during their fabricated was sought. this analysis has a practical importance to their manufacturer and provides a much better understanding of the pre-breakdown effects in gas at low pressure. the operating voltage of gfsa used in the experiment was 230 v [7]. the paper [8] examined the influence of the type of noble gas, gas pressure, inter-electrode gap, electrode material and the type of electrode surface processing, as well as the change of absorbed dose rate in radiation field on the operation of gfsa. such an extensive analysis of the evolution of breakdown voltage and delay time under high overvoltage 309 the impact of various parameters is performed due to their wide application in telecommunications systems, space technology and military industry. in addition, this type of testing of gfsa is related to the period immediately before the breakdown, but there are published papers that show the results related to the contribution of positive ions and neutral active particles remaining during the previous breakdown and discharge in the gas, using the delay time method [9,10]. this statistical method can provide the qualitative separation of contribution of different particle species which can induce the secondary electron emission processes, which lead to initiation of breakdown in insulation gas. citel, siemens and epcos are types of used gas-filled arresters in previous research at operating dc voltage in range of 220 to 250 v. 3. experimental details 3.1. gas-filled surge arresters the gas-filled surge arrester samples used in this work for the experiment were chosen from two manufacturers – littelfuse and epcos. littelfuse gfsa are designed with typical value of dc breakdown by: ▪ 285 v dc (in this paper marked as lf1) ▪ 230 v dc voltage (designated as lf2). ▪ 250 v dc voltage (in this paper marked as lf3). ▪ 350 v dc voltage (designated as lf4). aside from littelfuse gfsa, there have also been done experiments with epcos gfsa which is designed to operate at the voltage of: ▪ 230 v dc voltage (designated as ep). the technical characteristics of the gfsa mentioned above are listed in detail in table 1 [2,3]. table 1 device specifications (at 25°c) device breakdown voltage in the dc mode (v) dc breakdown – typical (v) insulation resistance (gω) capacitance (pf) lf1 230 – 340 285 10 1.5 lf2 184 – 276 230 1 1.5 lf3 200 – 300 250 10 1.5 lf4 280 – 420 350 10 1.5 ep 184 – 276 230 10 1.5 the components’ geometry is shown in fig. 1. inter-electrode space d is close to 6 mm. precise information about gas type and pressure could not be obtained. however, manufacturer states that gfsa is filled with neon and/or argon to the pressure below atmospheric. with respect to this, further analysis of physical processes will be focused on noble gases in general at low pressures. 310 e. živanović, m. živković, m. pejović fig. 1 the geometry of gas-filled surge arrester 3.2. measurement system for breakdown voltage estimation widely established definition of the breakdown voltage ub considers that it is the voltage applied on gas component, which induces the gas transition from non-selfsustaining to self-sustaining discharge. due to statistical nature, breakdown voltage is not a strictly predefined value. many different factors may influence its value [11,12]. those are for example, the presence of external ionization source (such as x, gamma or uv source), electrodes precondition [13], ambient temperature, electrode’s shape and product of inter-electrode distance and gas pressure [14,15], and many more. considering this, gas components, gfsa in our case, manufacturers usually give the expected breakdown voltage in the datasheets, with tolerance, which goes up to 20%. from the statistical point of view, it is of great importance to determine the breakdown voltage on the onset of breakdown, i.e., the voltage for which breakdown probability is still kept at zero value. this value is referred in the literature as the static breakdown voltage us and there are several methods for its determination. in our experiments, we used discretized dynamic method. estimation of static breakdown voltage is important due to the scaling of the overvoltage in relation to it. unlike dynamic method [16], which considers the application of linear ramp signal on gas component until breakdown, discretized dynamic method requires the application of stepped voltage on the diode until breakdown, while voltage step up and its duration tp are predefined (see fig. 2 below). in our experiments voltage step was fixed to 0.1 v. the duration of the steps was varied from 0.01 s up to 0.1 s. correspondingly, the voltage increase rates k = up /tp ranged from 1 to 10 v/s. this choice of voltage increase rate increases the resolution in measurement accuracy. the block diagram of electrical system for breakdown voltage measurement along with signals on gas diode for three successive measurements is presented in fig. 2. the evolution of breakdown voltage and delay time under high overvoltage 311 fig. 2 block diagram of a system for breakdown voltage acquisition: uk significantly smaller than the expected breakdown; ug value to which the voltage rises as it can be seen from fig. 2, the voltage on gas device is raised in steps until breakdown. computer based control and acquisition system has been set up to increase voltage in steps of certain duration until the breakdown voltage is established and recorded, and to do so sufficient number of times so that a good statistic for the measured quantity has been achieved. 312 e. živanović, m. živković, m. pejović 3.3. measurement system for delay time measurement memory curve is the dependence between delay time and relaxation period. due to statistical nature of delay time, it is necessary to perform large series of measurements and use the mean values of delay time as reference values. in our experiments, we used a series of a hundred delay time measurements for different relaxation periods. the relaxation periods were chosen according to logarithmic scale until the memory curve saturation. the block diagram of measurement system along with signals on gfsa for three successive measurements is presented in fig. 3. system structure can be divided into two separate subsystems, analog and digital. the main purpose of analog subsystem is to provide fast and accurate voltage switching on gfsa. digital subsystem, on the other hand, is responsible for measurement data collection and storage as well as the measurement control and execution. fig. 3 block diagram of a system for delay time acquisition measurement is executed in a following manner. the series of constant voltage pulses were applied on the component, while elapsed time between the voltage pulse application and breakdown was measured. measured delay times were stored in memory and voltage pulse was maintained on diode for the time tg in order to maintain the same conditions for every measurement. after that, the gas component was disconnected from the relaxation period τ. the procedure was repeated for a desired number of times, for different relaxation periods. the evolution of breakdown voltage and delay time under high overvoltage 313 4. results and discussion 4.1. analysis of static breakdown voltage special attention in this paper will be focused to two basic characteristics of gfsa. static dc breakdown voltage is one of them. it should be noted that the static breakdown voltage is the starting point for further overvoltage determination. and its meaning should not be confused with dc breakdown voltage from the datasheet. its estimation for each of used components was performed applying a dynamic discretized method [16]. it is based on a linear fit of the experimentally obtained dependence )(kfub = , where bu is the mean values of a thousand measured data of breakdown voltage and k is the voltage rate. the results represented in figs. 4 and 5 show the mean value of breakdown voltage as a function of voltage increase rate for littelfuse (for four different components) and epcos gfsa, respectively. the estimated static breakdown voltage is shown in all figures. fig. 4 mean value of breakdown voltage as a function of voltage increase rate for littelfuse gfsa 0 2 4 6 8 10 236,5 236,6 236,7 236,8 236,9 237,0 237,1 237,2 237,3 237,4 237,5 237,6 237,7 237,8 237,9 238,0 238,1 experimental data linear fit lf1 u b (v ) k(v/s) u s = 236.7 v 0 2 4 6 8 10 273,9 274,0 274,1 274,2 274,3 274,4 274,5 274,6 experimental data linear fit lf2 u b ( v ) k(v/s) u s = 273.9 v 0 2 4 6 8 10 283,8 284,0 284,2 284,4 284,6 284,8 285,0 285,2 experimental data linear fit lf3 u b (v ) k(v/s) u s = 284 v 0 2 4 6 8 10 373,0 373,1 373,2 373,3 373,4 373,5 373,6 373,7 373,8 373,9 374,0 374,1 u b (v ) k(v/s) experimental data linear fit lf4 u s = 373.2 v 314 e. živanović, m. živković, m. pejović 0 2 4 6 8 10 280,0 280,1 280,2 280,3 280,4 280,5 280,6 experimental data linear fit ep u b ( v ) k(v/s) u s = 279,9 v fig. 5 mean value of breakdown voltage as a function of voltage increase rate for epcos gfsa lf 2 ep fig. 6 histograms and fitted distribution density of dynamic breakdown voltage for lf2 and ep gfsa for k = 3 and 4 v/s the evolution of breakdown voltage and delay time under high overvoltage 315 in literature, in the analysis of the breakdown voltage in gas tube filled with noble gases and nitrogen, it was shown that the breakdown voltage is a statistical quantity with gaussian distribution function. this method also takes into account the stochastic nature of the breakdown voltage. namely, even at low voltage rise rates in a series of repeated measurements under the same experimental conditions, the obtained data will have different values. this confirms the fact that the breakdown voltage has a statistical nature with a certain distribution due to stochastic processes in the gas. this statement can be observed in fig. 6, which shows a histogram of relative frequencies of experimental data of breakdown voltage (a thousand measurements for each voltage increase rate) as well as gaussian distribution function. the breakdown voltage represented in this figure was obtained for voltage step up = 0.3 and 0.4 v and its duration tp = 0.1 s. as mentioned above k = up /tp and increase rate was k = 3 and 4 v/s, respectively (the details about the increase rate estimation can be found in paper [16]). a similar tendency was obtained for the other k. it should be expected for very small k that us has a constant value. but, the application of statistical 2 test, as well as r2 correlation coefficient, (shown in the table 2) present a good agreement between gaussian distribution function and experimental data. a complete analysis was performed for all samples used in the experiments, but a detailed statistical analysis was shown for gfsas marked as lf2 and ep that are at the same operating voltage of 230 v dc. table 2 2 and r2 values for analyzed gfsa device k (v/s) 2 r2 ep 3 24.21 0.91 ep 4 19.58 0.92 lf2 3 1.18 0.99 lf2 4 9.31 0.96 4.2. analysis of delay time the delay time existence could be the main problem in usage of gfsas. due to stochastic nature of breakdown process breakdown doesn’t appear instantly upon voltage application on gfsa. the time elapsed between the moment of application of voltage higher than breakdown voltage, and the moment when the gfsa current starts to flow is called the delay time td. the delay time consists of the statistical time delay ts and the formative time tf, i.e., td = ts + tf [17,18]. statistical delay time is the time interval between the moment of operating voltage application and the appearance of a free electron which initiates the breakdown. formative time is the time taken from the end of the statistical delay time to the onset of breakdown, characterized by the collapse of the applied voltage as a transition self-maintained glow [17]. the various parameters have an influence on delay time, but the most important factor is the relaxation time τ which represents the time interval between two successive measurements when there is no voltage on the used component [18]. this dependence, )(ftd = , is usually called the memory curve. it can be divided into three distinctive areas, those are plateau, the growth of delay time with relaxation and saturation. different mechanisms of breakdown initiation play dominant role in each range of the memory curve. however, the existence of a memory curve is undesirable when studying the reliability of gasfilled surge arresters, which will be discussed later in the paper. 316 e. živanović, m. živković, m. pejović since the gfsas’ manufacturers do not provide exact specification of the gas composition in the technical documentation, it can only be found that these are noble gases, and that argon and neon are most often used for this purpose. during the experiment itself, a reddish-orange glitter is noticed, which is a hint that these are noble gases. the experimentally obtained memory curves for littelfuse gfsa (fig. 7) can be compared with those previously obtained for argon and neon [19,20]. it can be seen that the shape of the curve is similar, i.e., that the plateau appears as well as the area of increase delay time with the period of relaxation. the plateau area itself is characterized by the constancy of the delay time with relaxation regardless of the overvoltage. only a decrease in the delay time with an increase in overvoltage is observed. as far as the plateau area is concerned, in this range of relaxation there is a high concentration of positive ions in the gas, which are formed both during discharge and afterglow. the processes that are possible with noble gases in which positive ions are formed, are responsible for maintaining discharge are listed in table 3 [21]. table 3 positive ions’ creation process reaction direct ionization exxе 2+→+ + stepwise ionization of metastable atoms by electron impact exxе m 2+→+ + metastable-metastable collision ionization exxxx mm ++→+ + exxx mm +→+ + 2 excited atom-ground state atom collision exxx +→+ + 2 * three-body collision (ion conversion) ion recombination between electron and molecular ion diffusion on the device wall xxxx +→+ ++ 22 xxxxxe m +→+→+ + * 2 wallxxxe m →++ 2,,, in reactions represented above (table 3), x is the ground state’s atom of noble gas, while x* and xm signify resonant excited and metastable level, respectively. as x+ and + 2x are marked positive ion in atomic and molecular form, respectively. in figs. 7 and 8 families of delay time vs. relaxation (memory curve) dependencies are shown, for all littelfuse samples as well as for epcos gfsa, respectively. dependencies were recorded for different overvoltages. the overvoltage is most often expressed in percentages and defined as (u / us)  100 %, where u is the difference in operating voltage uw (uw > us) and static breakdown voltage, i.e., u = uw − us. the aim of this study was to examine the effect of the applied voltage to the delay time in the function of relaxation time because of determined overvoltage range corresponding to safe component operation. the memory curves’ plateau (see figs. 7 and 8) is a consequence of positive ions’ recombination formed by first five reactions from table 3. atoms and molecules in ground and metastable state have also been included in the secondary electron emission (see) process, but because of their electroneutrality had much smaller contribution. the rapid growth of delay time can be observed in some cases. it is a consequence of a change in mechanisms yielding the dominant influence in the see process. significant decrease of ion the evolution of breakdown voltage and delay time under high overvoltage 317 concentration as well as longer recombination time of neutral particle is the main cause of sudden td rise. fig. 7 mean value of delay time as a function of relaxation time for different overvoltage for littelfuse gfsas fig. 8 mean value of delay time as a function of relaxation time for different overvoltage for epcos gfsa 318 e. živanović, m. živković, m. pejović two conclusions can be drawn from the presented results. the first one is a tendency toward delay time decrease with increasing overvoltage for all gfsas. it has been previously tested and confirmed for gas-filled tube that by increasing the voltage, the probability of a breakdown in the gas increases as well as the probability that the secondary electrons released from the cathode lead to a breakdown [22-24]. when the yield of electrons in a gap is a constant, the mean value of delay time is inversely proportional to the breakdown probability [22]. it has also been shown that the breakdown probability increases with increasing overvoltage, which is manifested by a decrease in the mean value of delay time. in most of the experimental results, the obtained characteristics do not show an increase in delay time, that is expected. since delay time is practically independent of the relaxation time  it can be concluded that tested components worked reliably in the whole range of tested relaxation periods. however, it can be seen in fig. 7, that samples lf1 and lf3 show different tendency for lower values of overvoltage. namely, sample lf1 shows significant increase in delay time for relaxation period longer than 7 s for overvoltages 1.3us and 1.4us, while sample lf3 shows similar behavior for relaxation longer than 700 ms and overvoltage 1.2us. with respect to above mentioned, it can be concluded that these components are not reliable for operation in the area of significant increase of delay time. ep sample in fig. 8 shows similar behavior for relaxation about 1.5 s and 1.1us overvoltage although increase in delay time is smaller than for lf1 and lf3 samples. in order to establish overvoltages below which components are not reliable, the delay time method allows evaluating the delay time of these components. namely, the memory curves (figs. 7 and 8) indicate to values of gfsa, i.e., approximate from 10 µs to 30 µs for lf1, as well as in the range of 15 µs to 200 µs for lf2, around 10 µs for lf3, from 30 µs to 300 µs for lf4, and between 80 µs and 400 µs for ep. as the gfsas of both manufacturers showed a deviation in the results for relaxation times of about 105 ms, this required further statistical analysis. figs. 7 and 8 also indicate that for some overvoltage there is an increase in delay time with increasing relaxation time. this is something which indicates instability in the operation of the component with respect to the delay time. in the earlier results [22-25] of the memory effect study, it can be seen that in the region of increase for most experimental conditions ts is less than tf, as well as that the standard deviation of tf is very small, in the analysis of total delay time, in the first approximation we can assume that under constant experimental conditions, it is deterministic. in this case, the delay time becomes the sum of one deterministic tf and one stochastic quantity ts, so it takes on its stochastic character from the statistical delay time. it has been shown earlier [18] that the statistical delay time has an exponential distribution, which is based on the physical nature of the processes that occur in the gas. in the physical literature, the exponential distribution is based on the so-called laue distribution. it is represented by diagrams lauegrams, where n is the total number of delay time measurements, and n(t) represents the number of measured delay time whose values are greater than t. this corresponds to the drawing of the function ln ( ) ( ),fr t t t= − − where ( ) 1 ( ) 1 exp[ ( )] f t f t r t f t x t dx= − = −  − − , is the function that represents the probability that a breakdown in the gas will occur after time t. since 1 st = , laue distribution is usually written in the form [26] the evolution of breakdown voltage and delay time under high overvoltage 319 ( ) ln f s t tn t n t − = − . lf2 ep fig. 9 lauegrams of the relaxation time for the previously observed deviation of gfsa of both manufacturers where the delay time increases suddenly and where the operation of the components is not reliable 320 e. živanović, m. živković, m. pejović this expression shows that the mean value of the statistical delay time, and thus the electron yield, can be obtained from the slope of straight line, and the formation time is cut off on the td axis. on lauegrams, the linear fit is obtained using the least squares method when determining the distribution parameters. the correlation coefficient was determined for each data set. it connects the data of two features, in this case ln n(td)/n and td, and represents a quantitative measure of the agreement of the experimental data for the delay time with the exponential distribution. fig. 9 represents the lauegrams for those relaxation times for which the deviation in figs. 7 and 8 is observed. for these relaxation times, the delay time increases suddenly and for these values the operation of the components is not reliable. a detailed statistical analysis was performed to check whether it was a measurement fault or physical processes occurring in the gas. if there is a good laue distribution, i.e., if r2 correlation coefficient is close to unity, it means that scattering of experimental delay time data exist. then the memory curve is expressed, so from a technical point of view, the arrester is not good. for smaller r2, the data is more difficult to describe by the laue distribution, so there is no memory curve and the delay times are small, so the arrester is reliable. the results of the used statistical pearson’s test confirm this, as well as the fact that with the growth of relaxation time. confirmations of these facts can be seen in tables 4 and 5. the first one refers to the analysis of experimental data of the gas-filled surge arrester marked as lf2, and the second to the ep. table 4 pearson’s test and r2 for lf2 τ pearson’s r r2 700 -0.92 0.85 1500 -0.98 0.97 3000 -0.99 0.99 table 5 pearson’s test and r2 for ep τ pearson’s r r2 1500 -0.90 0.81 3000 -0.92 0.85 7000 -0.99 0.97 5. conclusion based on all of the above, the following can be concluded. the paper investigates the reliability testing of littelfuse and epcos gas-filled surge arresters. using the dynamic discretized method for different voltage increase rates from 1 to 10 v/s, the static breakdown voltage was precisely estimated. components’ delay time has been determined for different nominal overvoltages using delay time method. the mean value of breakdown voltage as a function of voltage increase rate for all gfsas has been shown. in addition, histograms and fitted distribution density of dynamic breakdown voltages for lf2 and ep gfsas, that are at the same operating voltage of 230 v dc, for k = 3 and 4 v/s are shown. it is evident that the breakdown voltage for these gfsas is a statistical quantity with gaussian distribution function, as presented. the evolution of breakdown voltage and delay time under high overvoltage 321 the delay time of the gfsas is determined from the obtained experimentally memory curve. figs. 7 and 8 show those dependencies, the mean value of delay time as a function of relaxation time for different overvoltage for littelfuse and epcos gfsas. as it can be observed, in the case of lf1, for overvoltages greater than 40% this type of surge arrester works reliably. also, for overvoltages less than 40% it also works reliably for relaxation times up to 7 s. for lf2, we can notice that the device works reliably for overvoltages greater than 20%. in the case of lf3, reliability is shown for overvoltages over 30%. for overvoltages less than 30% it works reliably up to 1.5 s of relaxation time. also, lf4 shows very good reliability for overvoltages over 10%. finally, epcos device has the reliability for overvoltages over 20%, while under 20% unreliability is shown for relaxation times over 1.5 s. additionally, the previous results which show an increase in delay time with increasing relaxation time were used for further statistical analysis. the laue distribution of these data is represented by lauegrams in fig. 9. it shows that the mean value of the statistical delay time, and thus the electron yield, could be obtained from the slope of a straight line, and the formation time is cut off on the td axis. further analysis is planned in order to continue research with the goal of comparing already obtained results with additional analysis of ionizing radiations’ influence on gfsas’ samples produced by littelfuse and epcos like investigation done for xenonfilled tube published in [27] as well as given the current attractiveness of investigations based on radiation of different types of components [28-30]. acknowledgement: this work has been supported by the ministry of education, science and technological development of the republic of serbia. references [1] m. m. pejović, introduction to electrical gas discharges. gas electronic components, in serbian, university of niš, faculty of electronic engineering, 2008, chapter 8, pp. 124-128. [2] https://www.littelfuse.com/~/media/electronics/product_catalogs/littelfuse_gdt_catalog.pdf.pdf [3] https://www.tdk-electronics.tdk.com/inf/100/ds/a81-a230xg-x3800t502.pdf [4] e. živanović, s. veljković, m. živković amd m. pejović, "reliability of various type of gas-filled surge arresters under dc discharge", in proceedings of the 31st international conference on microelectronics, niš, serbia, 2019, pp. 113-116. [5] k. stanković and l. perazić, "determination of gas-filled surge arresters lifetimes", ieee trans. on plasma sci., vol. 47, no. 1, pp. 935-943, january 2019. [6] j. he, j. lin, w. liu, h. wang, y. liao and s. li, "structure-dominated failure of surge arresters by successive impulses", ieee trans. on power delivery, vol. 32, no. 4, pp. 1907-1914, august 2017. [7] b. lončar, p. osmokrović, a. vasić and s. stanković "influence of gamma and x radiation on gas-filled surge arrster characteristics", ieee trans. plasma sci., vol. 34, no. 4, pp. 1561-1565, august 2006. [8] b. lončar, m. vujisić, k. stanković, d. aranđić and p. osmokrović, "radioactive resistance of some commercial gas filled surge arresters", in proceedings of the 26th international conference on microelectronics, niš, serbia, 2008, pp. 587–590. [9] m. m. pejović and m. m. pejović, "investigations of breakdown voltage and time delay of gas-filled surge arresters", j. phys. d: appl. phys., vol. 39, pp. 4417-4422, september 2006. [10] m. m. pejović, k. stanković, i. fetahović, m. m. pejović, "processes in insulating gas induced by electrical breakdown responsible for commercial gas-filled surge arresters delay response", vacuum, vol. 137, pp. 85-91, march 2017. [11] y. fu, p. zhang, j. p. verboncoeur and x. wang, "electrical breakdown from macro to micro/nano scales: a tutorial and a review of the state of the art", plasma res. express, vol. 2, p. 013001, february 2020. https://www.littelfuse.com/~/media/electronics/product_catalogs/littelfuse_gdt_catalog.pdf.pdf https://www.tdk-electronics.tdk.com/inf/100/ds/a81-a230xg-x3800t502.pdf 322 e. živanović, m. živković, m. pejović [12] z. lj. petrović, j. sivoš, m. savić, n. škoro, m. radmilović rađenović, g. malović, s. gocić and d. marić, "new phenomenology of gas breakdown in dc and rf fields", j. phys.: conf. series, vol. 514, p. 012043, may 2014. [13] s. gocić, n. škoro, d. marić and z. lj. petrović, "influence of the cathode surface conditions on v–a characteristics in low-pressure nitrogen discharge", plasma sources sci. technol., vol. 23, p. 035003, may 2014. [14] d. marić, n. škoro, p. d. maguire, c. m. o. mahony, g. malović and z. lj. petrović, "on the possibility of long path breakdown affecting the paschen curves for microdischarges", plasma sources sci. technol., vol. 21, p. 035016, may 2012. [15] a. m. loveless and a. l. garner, "a universal theory for gas breakdown from microscale to the classical paschen law", physics of plasmas, vol. 24, p. 113522, november 2017. [16] m. m. pejović, č. s. milosavljević and m. m. pejović, "the estimation of static breakdown voltage for gasfilled tubes at low pressures using dynamic method", ieee trans. plasma sci., vol. 31, pp. 776-781, august 2003. [17] j. m. meek and j. d. craggs, electrical breakdown of gases, new york, usa: wiley, 1987. [18] m. m. pejović, g. s. ristić and j. p. karamarković, "electrical breakdown in low pressure gases", j. phys. d: appl. phys., vol. 35, pp. r91-r103, april 2002. [19] m. m. pejović, m. m. pejović, č. i. belić, k. đ. stanković, "separation of vacuum and gas breakdown processes in argon and their influence on electrical breakdown time delay", vacuum, vol. 173, p. 109151, march 2020. [20] m. m. pejović, "the application of a small-volume neon-filled tube in overvoltage protection", ieee trans. on plasma sci., vol. 43, no. 4, pp. 1063-1067, april 2015. [21] m. pejović, k. stanković, m. pejović and p. osmokrović, processes induced by electrical breakdown responsible for the memory effect in low pressure noble gases, in book advances in chemistry research, 2019, chapter 2, vol. 47, edited by j. c. taylor, new york: nova science publishers, inc., pp. 47-93. [22] e. n. živanović, "investigation of the effect of additional electrons originating from the ultraviolet radiation on the nitrogen memory effect", fu elec. energ., vol. 28, no. 3, pp. 423-437, september 2015. [23] m. m. pejović, n. t. nesić, m. m. pejović and e. n. živanović, "afterglow processes responsible for memory effect in nitrogen", j. appl. phys., vol. 112, p. 013301, may 2012. [24] e. n. živanović, "influence of combined gas and vacuum breakdown mechanisms on memory effect in nitrogen", vacuum, vol. 107, pp. 62-67, september 2014. [25] e. n. živanović, m. m. pejović, m. m. pejović and n. t. nešić, "analysis of the statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and n(4s) atoms", contrib. to plasma phys., vol. 51, no. 9, pp. 877-884, april 2011. [26] f. llewellyn jones, e. t. de la perrelle, "field emission of electrons in discharges", proc. math. phys. eng. sci., vol. 216, no. 1125, pp. 267-279, january1953. [27] m. pejović, e. živanović and m. živanović, "investigation of xenon-filled tube breakdown voltage and delay response as possible dosimetric parameters for small gamma ray air kerma rates", radiat. prot. dosim., vol. 190, no. 1, pp. 84-89, august 2020. [28] d. boychenko, o. kalashnikov, a. nikiforov, a. ulanova, d. bobrovsky and p. nekrasov, "total ionizing dose effects and radiation testing of complex multifunctional vlsi devices", fu elec. energ., vol. 28, no. 1, pp. 153-164, march 2015. [29] m. pejović, "p-channel mosfet as a sensor and dosimeter of ionizing radiation", fu elec. energ., vol. 29, no. 4, pp. 509-541, december 2016. [30] t. pešić-brđanin, "spice modeling of ionizing radiation effects in cmos devices", fu elec. energ., vol. 30, no. 2, pp. 161-178, june 2017. 10684 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 1-16 https://doi.org/10.2298/fuee2301001l © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper performance analysis of finfet based inverter, nand and nor circuits at 10 nm ,7 nm and 5 nm node technologies abdelaziz lazzaz1, khaled bousbahi2, mustapha ghamnia3 1,3laboratoire des sciences de la matière condensée (lsmc), département physique, université d’oran 1 ahmed ben bella, oran, algérie. 2ecole supérieure du génie electrique et energétique d’oran, (esgeeo), algérie abstract. advancement in the semiconductor industry has transformed modern society. a miniaturization of a silicon transistor is continuing following moore’s empirical law. the planar metal-oxide semiconductor field effect transistor (mosfet) structure has reached its limit in terms of technological node reduction. to ensure the continuation of cmos scaling and to overcome the short channel effect (sce) issues, a new mos structure known as fin field-effect transistor (finfet) has been introduced and has led to significant performance enhancements. this paper presents a comparative study of cmos gates designed with finfet 10 nm, 7 nm and 5 nm technology nodes. electrical parameters like the maximum switching current ion, the leakage current ioff, and the performance ratio ion/ioff for n and p finfet with different nodes are presented in this simulation. the aim and the novelty of this paper is to extract the operating frequency for cmos circuits using quantum and stress effects implemented in the spice parameters on the latest microwind software. the simulation results show a fitting with experimental data for finfet n and p 10 nm strctures using quantum correction. finally, we have demonstrate that finfet 5 nm can reach a minimum time delay of td=1.4 ps for cmos not gate and td=1 ps for cmos nor gate to improve integrated circuits ic. key words: finfet, quantum effect, cmos not gate, cmos nor gate, cmos nand gate, microwind 1. introduction the rapid development of nanoelectronics technology is closely related to solving the problem of minimum layout dimensions. the efficient miniaturization of a transistor has been one of the most important topic for integrating a greater number of electronic components in a single chip. received april 17, 2022; revised may 22, 2022, june 05, 2022 and june 16, 2022; accepted july 16, 2022 corresponding author: abdelaziz lazzaz laboratoire des sciences de la matière condensée (lsmc), département physique, université d’oran 1 ahmed ben bella, oran, algérie e-mail: lazzaz.abdelaziz@gmail.com 2 a. lazzaz, k. bousbahi, m. ghamnia finfet is one of the best alternative for replacing mosfet which encounter the problem of the sce like drain induced barrier lowering (dibl), and the increase of leakage current when the channel length is reduced below 32 nm. researchers around the world have tried to improve the performance of finfets by the introduction of high k dielectric materials and strained silicon technology [1]. since the conventional mosfet has reached its limit, the multi gate finfet has been one of the most promising devices for cmos technology and the different analytical studies of finfet is a current topic of research in large foundries like tsmc[6], samsung and intel, they are aiming to create the most efficient cmos circuits. shiqi liu et al. in 2021[21] have simulated an ultra-thin si finfet with a width of 0.8 nm by using ab initio quantum transport simulations. the results of their simulation confirm that even with the gate length down to 5 nm, the on-state current, delay time, power dissipation, and energy-delay product of the optimized ultra-thin si finfet still meet the high-performance applications. dhananjaya tripathy et al in 2022 [22] have examined the impact of variation in the thickness of the oxide (sio2) layer on the performance parameters of a finfet. the results confirm that a rise in sio2 thickness improves the energy and power dissipation of finfet. lazzaz et al. in 2022 [23] have simulated a theoretical model based on the bohm quantum potential (bqp) theory and compared it with experimental data. the theory fits with the experiment after optimization and correction using the right values of the geometric parameters. bourahla et al. in 2021 [24] have demonstrated that the ta2o5 material of gate with high permittivity (k = 27) turns out better values for performance parameters such as (vth, ss, ion, ioff current and ion/ioff ratio current, gm, and electrical field (e)) in comparison with other dielectrics such as sio2, sno2, zro2 which improve the performance of the device. lazzaz et al. in 2021 [2] have demonstrated the impact of the metal gate work function on the performance of the dg finfet 10 nm with silvaco tcad tools. uttam kumar das et al. in 2021 [25] have examined a comparative study between silicon finfet with carbon nanotube and 2d-fets for advanced node cmos logic application.the results of this simluationn confirm that the finfet delivers more than three times higher drive current, as well as five times better energy-delay performances. rajeev ratna vallabhuni et al. in 2020 [26] have simulated a 2-bit comparator designed with 18nm finfet technology. the simulation shows the cmos comparator in terms of power and delay using the cadence virtuoso tool. the result of this simulation confirm that finfet can be used where a fast switching rate is required, to improve the efficiency of control devices and to make compact device. j. jena et al. in 2022 [27] have simulated finfet-based inverter design and optimization for 7 nm technology node. the result of their simulation confirm that according to the sidewall orientation (<100 > or < 110>), the amount of mobility enhancement of both the electrons and holes results in more than 100% (>100%) and less than 25% (<25%) respectively. c. auth et al. in 2017 [32] have an industry leading 10 nm cmos technology node with excellent transistor such as finfet with interconnect performance and aggressive design rule scaling.the results of their simulation show a higher performane high density sram featuring 0.0312µm² cell size fabricated using all 10 nm process features. s.panchanan et al. in 2021 [35] have simulated an analytical model of tri-gate metaloxide-semiconductor field effect transistor (tg mosfet) for short channel lengths performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 3 below 10 nm using tcad software. the model is examined by varying channel length, oxide thickness, gate voltage, drain voltage and doping concentration. the result of their simulation confirm that to obtain identical surface potentials, the oxide thickness of hfo2 must be larger than sio2. unlike sio2, the minima of surface potential remain constant with channel length for hfo2. b. vandana et al. in 2018 [36] have explored the analog analysis and higher order derivatives of drain current (id) at gate source voltage (vgs), by introducing channel engineering technique of 3d conventional and wavy junctionless finfets (jlt) as silicon germanium (si1-0.25ge0.25) device layer. the results of their simulation confirm that a better channel controllability over the gate is observed for wavy structures and high id is induced as lg scales down. n. p. maity et al. in 2019 [37] have simulated a double-gate (dg) heterojunction tunnel finfet structure with a source overlap region to optimize its performance and validate its technology computer-aided design (tcad) simulation results by modeling of the surface potential, electric field, and threshold voltage. suparna panchanan et al. in 2021[38] have analysed an analytical model for surface potential and threshold voltage for undoped (or lightly) doped tri-gate fin. field effect transistor (tg-finfet) is proposed and validated using transistor computer aided design (tcad) simulation. suparna panchanan et al. in 2022 [39] have studied lambert w function-based a drain current model of lightly doped short channel tri-gate fin fashioned field effect transistor (tgfinfet). their results confirm that a precise drain current is obtained by adding quantum mechanical effect (qme) which also improves the efficiency of the model. shaheen saleh et al. in 2018 [41] have demonstrated the roles and impacts of various effects and aging mechanisms on finfet transistors compared to planar transistors on the basic approach of the physics of failure mechanisms to fit to a comprehensive aging model. so, the above literature survey indicates the importance of using high-k dielectrics in finfet devices and the importance of multi gate finfet to overcome the sce and to improve the channel control. in this paper, we present a comparative study of different cmos gates (not gate, nand and nor gate) based on 10 nm, 7 nm and 5 nm technology node to extract optimul geometric parameters to have an operational finfet device for future applications like sram circuits. 2. device structure and simulation tri gate (tg) finfet technology is based on the vertical fin represented by the fin length (l), fin height (hfin) and fin width (wfin) as show in figure 1. finfet devices have been used in a variety of innovative digital and analog circuit designs. tg (tri gate) has been recently developed and its ability to control three channel sides has been used in order to reduce circuit area, its capacitance and the variation of the threshold voltage. throughout the last few years, cmos scaling and improvement in processing technologies have led to continuous enhancement in circuit speeds due to the miniaturization of finfet device. the main difference between the bulk finfet and soi finfet is the buried oxide (box) which isolate the body from the subtrate, minimizes the leakage current due to quatntum effect, reduces the parasitic junction capacitance and source/drain capacitance. 4 a. lazzaz, k. bousbahi, m. ghamnia despice the use of the soi finfet technology in term of enhancement of the device, one of the drawbacks is the self heating effect because the active thin body is on silicon oxide which is good thermal insulator. during an operation, the power consumed by the active region cannot be dissipated easily therefore, the temperature of thin body rises and this decreases the mobility and the current of the device [32]. in this work, finfet structure has been simulated with microwind 3.8 software using parameters that are provided in table 1. figure 1 in the right shows the 3d schematic of simulated finfet 10 nm and in the left figure shows the design layout of the device: fig. 1 n finfet 10 nm table 1 different parameters of the simulated device [6] [7][12] notation description finfet 10 nm finfet 7 nm finfet 5 nm ls,ld length of drain /source 22nm 16 nm 12 nm lg gate length 18 nm 16 nm 14 nm tox oxide thikness 1 nm 0.9 nm 0.9 nm hfin fin height 46 nm 46 nm 46 nm wfin fin width 7 nm 6 nm 5 nm table 1 shows the design parameters that we have employed for the circuit simulations in our present work. the primary obstacles to the scaling of cmos gate lengths to 10 nm and beyond are short channel effect and leakage current which lead to low yield. finfet offers better control over of the sce and hence overcome the obstacles of scaling. the circuit simulation is done using microwind 3.8 which we have used to simulate electrical circuits in transient domain. microwind tool facilitates circuit level analysis of performance simulation of the integrated circuits. the predictive technology model (ptm) integrated in microwind provides accurate, customizable, and predictive model files for future transistor and interconnect technologies[28][29]. we have simulated different logic circuits such as the not gate,2 input nand and 2 input nor gates for leakage power dissipation, delay time and power delay product (pdp) at 10 nm, 7 nm and 5 nm technology nodes and a comparison is made to check the technology scaling. performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 5 the threshold voltage expression can be represented by the following equation [11]: in ox ss ox d fmsth v c q c q v ++++=  2 (1) ms: work functions difference between gate and fin, qss: charge in the gate dielectric, cox: oxide capacitance, qd: depletion charge, f : fermi potential vin : input voltage. power dissipation plays a crucial role in the overall performance of the circuits in sub 10 nm regime and it represents an important performance metric to check the effectiveness of the proposed technique. time delay is a performance metric to evaluate the switching speed of the circuit, it is calculated by following equation [9]: 2 plhphl d tt t + = (2) tphl: high to low transition delay; tplh: low to high transition delay. leakage power dissipation is also an important parameter for research designers because it affects performance and reliability of the electronic device. the leakage power dissipation is calculated using following equation [8]: leakageddleakage ivp = (3) where vdd is supply voltage and ileakage is the leakage current. scaling of finfet plays a very important step in finfet structure where the scaling factor  is given in following equation [6]: oxfin tw 2+= (4) wfin: fin width; tox: oxide thickness. pdp (power delay product) is an essential requirement for better performance of the circuits. technology scaling increases power dissipation and delay values therefore, lowest value of pdp depicts better performance at the scaled technology nodes. pdp is given by following equation [17]: pdp =power dissipation x delay (5) the following equation represents the drain current equation on the sub-threshold mode used in this simulation: ) )( ( ),( nkt vvq dsondsds ongs evvii − = (6) vgs: gate source voltage , n: body coefficient , k: boltzman coefficient , t:temperature, q:electron charge. )1( ) ).42( 1(0 0 effsat dseff dseff gsteff dseffbulk gsteff r eff eff eff l v v vtv va v toxel w ids    + + −= (7) weff: effective width, leff: effective length , ε0: vacuum permittivity, εr: relative permittivity, toxe: oxide thichness, vgsteff: gate source effective voltage, vdseff: drain source effective voltage, ε0: saturation permittivity, v: carrier velocity. 6 a. lazzaz, k. bousbahi, m. ghamnia in 3d nanochannel devices, the sce modifies the drain current expression by a correction factor cf for the post-threshold voltage regime: l cf + =   (8)  : mean free path, l: channel lengh, cf: is also called transition coefficient. figure 2 represents the transfer characteristics of n finfet 10 nm and illustrates a comparison between the theoretical and experimental transfer characteristics in subthreshold regime. the gate voltage is swept from 0 v to 0.8 v for different drain values 0.05 v, 0.1 v and 0.2 v. the maximum value of drain current represents the on current when vgs= vdd=0.8 v and the value of on current is 10.5 µa.the leakage current is 2.75 na and it represents the value of the current when vgs=0. to fit the experimental results, the drain current is modified by correction factor cf represented in equation 8. this coeffcient represents the transport mode transition factor. the transport is quasi balistic in the channel. this transition coefficient takes into consideration the type of charge carrier n or p therefore, the correction value distinguished between both structures. the fitting of the simulated results with the experimental data is due to the quantum correction that gave a good convergence between two curves. the cacultated parameters are used to compute the means free path used in the equation number (8) such as, effective mobility in th n channel, diffusion coefficient and unidirectional thermal velocity. the electron carrier mobility used in this simulation of n finfet 10 nm is 350 cm²/v.s. the average mobility value has been extracted from berkley spice model for finfet 10 nm [28]. it is noted that for the gate voltages 0.1 v and 0.2 v, the simulation curves fit very well with the experimental [31], there is therefore a good convergence between the theoretical model and the experimental points curves at these gate voltages. the discrepancy at 0.4 v and 0.5 v voltages can be explained by the presence of complex scattering phenomena which are very difficult to model. fig. 2 transfer characteristics of n finfet 10 nm [31] performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 7 figure 3 represents transfer characteristics of p finfet 10 nm and illustrates a comparison between the theoretical and experimental transfer characteristics. we note that the on current is 50 µa and the leakage current is 44.76 na. the threshold voltage in this simulation is 0.20 v and the decrease of threshold voltage is due to the increase of the quasi-fermi level. the values of drain voltage have been chosen to calculate the threshold voltage and to fit the curve with experimental data [31]. fig. 3 transfer characteristics of p finfet 10 nm figure 4 represents the transfer chrematistics of n finfet 7 nm, we note that on current is 0.306 ma and leakage current is ioff is 82.536 na. various low static power technology needs higher threshold voltage but the miniaturization of integrated circuits and channel length decreases the threshold voltage. the threshold voltage in this simulation is 0.22v [33]. the leakage current in this simulation of n finfet 7 nm is lower than calculated by suyog gupta et al [4]. fig. 4 transfer characteristics of n finfet 7 nm 8 a. lazzaz, k. bousbahi, m. ghamnia figure 5 represents the transfer characteristics of p finfet 7 nm, we note that ion is 0.250 ma and leakage current is ioff= 221.571 na. we note that on current in this simulation of p finfet 7nm is higher than calculated in t.dash et al [18] and leakage current is lower than calculated by suyog gupta et al [4]. fig. 5 transfer characteristics of p finfet 7 nm figure 6 represents transfer characteristics of n finfet 5 nm, we note that the on current is 0.240 ma and the leakage current is 81.694 na. the threshold voltage is 0.23 v for this simulation and the increase of its value is due to the fermi level and to have better threshold voltage, we need to increase the fin height [3][14]. on current in this simulation is higher than calculated by n. p. maity et al [5]. we can control and minimize the leakage current in this structure with different channel length by optimizing the geometric parameters in order to have optimal results. fig. 6 transfer characteristics of n finfet 5 nm performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 9 figure 7 represents the transfer characteristics of p finfet 5 nm, we note that the maximum current ion is 0.199 ma and leakage current is 219.31 na. we think that the problem to the increase of the leakage current is the leaked quantum confinement and the choice of geometric parameter like the gate oxide which leads to the raising of the conduction band, so we need more potential to create an inversion layer [13]. fig. 7 transfer characteristics of p finfet 5 nm the following table 2 represents the performance ratio ion/ioff the threshold voltage vth and dibl calculated for different structures of finfet 10 nm, 7 nm and 5 nm [10]. the table presents a comparatice study with international roadmap for device and systems (irds) results [30].the supply voltage for finfet 10 nm and 7 nm is 0.8 v and 0.65 v for finfet 5 nm.these parameters are extracted from berkley spice model [28]. table 2 performance ratio of finfet 10 nm,7 nm and 5nm device finfet 10 nm finfet 7 nm finfet 5 nm ion/ioff values for n structure 3818.18 3707.36 2937.79 ion/ioff values for p structure 1117.6 1128.30 907.36 vth (v) for n structure 0.24 0.22 0.23 vth (v) for p structure 0.20 0.20 0.22 ion/ioff for n strcture (irds)[30] 950 930 840 dibl n fnfet (mv/v) 49.5 45.5 40.5 dibl p finfet (mv/v) 50.5 46.5 41.5 we note that the better performance ratio of n finfet is for finfet 7 nm due to the leakage current and the higher ratio performance of p finfet is for finfet 10 nm due to the minimum strain effect of on current. 10 a. lazzaz, k. bousbahi, m. ghamnia 3. cmos gates designs this paper has considered three design styles for digital logic circuits structures using finfets. the circuit diagram of different finfet-based not gate, nand, nor gate designs along with the ordinary cmos is shown in the figure 8. fig. 8 (1): not gate, (2): cmos nand, (3) cmos nor [8] the three different circuits of cmos (nand nor and inverter) based of finfet have been analyzed using the microwind 3.8 tool. the first step is the implementing of three different circuits of finfet based nand and nor gates in order to create the layout styles [16]. the design rule must be checked before applying the inputs. the design rule which is used in this simulation is lambda-based design rule. the value of lambda is fixed to 8 nm [6] [15]. figure 9.a represents the layout design of cmos not gate with finfet 5 nm using microwind 3.8 and figure 9.b represents the structure of cmos not gate in 3d with finfet 5nm.[19] (a) (b) fig. 9 (a) design layout cmos inverter , (b) cmos inverter 3d structure performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 11 figure 10.a represents the design layout of cmos nand with finfet 5 nm using microwind 3.8 and figure 10.b represents the structure of cmos nand in 3d with finfet 5nm. (a) (b) fig. 10 (a) design layout cmos nand gate, (b) cmos nand 3d structure figure 11a represents the design layout of cmos nor gate with finfet 5nm using microwind 3.8 and figure 10.b represents the structure of cmos nor gate in 3d with finfet 5nm. (a) (b) fig. 11 (a) design layout cmos nor gate, (b) cmos nor gate 3d structure figure 12 represent the different vtc curves of different cmos circuits: 12 a. lazzaz, k. bousbahi, m. ghamnia (a) (b) (c) fig. 12 (a) vtc curves of cmos not gate, (b) vtc curves of cmos nor gate, (c) vtc curves of cmos nand gate noise margin is a measure of design margins to ensure circuits operation within specified conditions and it is closely related to the dc transfer curve [40]. this parameter allows to determine the allowable noise voltage on the input of a gate so that the output will not be corrupted. the specification most commonly used to describe noise margin (or noise immunity) uses two parameters: the low noise margin nml and the high noise margin nmh [8]. table 3 represents calculated parameter from vtc (voltage transfer curve): figure 13 represents the values of power delay product (pdp) with different cmos gates. we note that the better value of pdp in not gate is for finfet 5 nm and for cmos nand, nor gates is finfet 7 nm. performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 13 table 3 calculated parameters of different cmos finfet gates device finfet not gate finfet nand gate finfet nor gate technlogy node 10 nm 7 nm 5 nm 10 nm 7 nm 5 nm 10 nm 7nm 5 nm vdd 0.80 0.8 0 0.65 0.80 0.80 0.65 0.80 0.80 0.65 vsp(v) 0.385 0.385 0.386 0.397 0.391 0.3999 0.379 0.373 0.371 vil(v) 0.3243 0.3243 0.3189 0.3445 0.3445 0.3351 0.3148 0.3189 0.3202 voh(v) 0.7750 0.7687 0.7656 0.7509 0.7562 0.7562 0.7187 0.7718 0.7562 vih(v) 0.4378 0.4391 0.4418 0.4513 0.4472 0.4472 0.4189 0.4216 0.4437 vol(v) 0.0531 0.0406 0.0406 0.0375 0.0437 0.0406 0.0343 0.05 0.0437 nml(v) 0.2712 0.2836 0.2782 0.3070 0.3007 0.2944 0.2804 0.2689 0.2764 nmh(v) 0.3372 0.3296 0.3238 0.2996 0.3090 0.3090 0.2998 0.3502 0.3125 td (ps) 1.6 1.5 1.4 2.20 2.20 2.10 1.10 1.10 1.0 p( w ) 0.446 0.357 0.460 0.475 0.686 0.5950 0.325 0.416 0.401 pdp (10-18w.s) 0.7136 0.5355 0.6440 1.0450 1.5092 1.2495 0.3575 0.4576 0.4010 p: power dissipation in static cmos, pdp: power delay product. td: time delay; vol: maximum low output voltage, voh: minimum high output voltage, vil: maximum low input voltage, vih: minimum high input voltage, vsp: switching point voltage. fig. 13 power delay product (pdp) for different cmos gates figure 14 represents the values of times delay of different cmos gates, we note that the optimal device is finfet 5 nm due to the low time delay. the results obtained for each of the digital application at 10 nm, 7 nm and 5 nm of finfet shows a system tradeoff. we note that as we scale down the device from 10 nm to 5 nm, the time delay decreases because the supply voltage has been decreased [34]. 14 a. lazzaz, k. bousbahi, m. ghamnia fig. 14 time delay for different cmos gates the fluctuation in power delay product (pdp) is due to the fluctuation of static power dissipation and it is a minor issue because the system reliability has improved [20]. conclusion as ultra large semiconductor integration (ulsi) moves towards new advancement, new challenges have been arisen such as sce which are generated because of scaling of the transistors. from the simulation results, it has been observed that the leakage power dissipation is the major issue in modern semiconductor industry and finfet devices have the advantages to overcome these issues. the simulation results for finfet based digital application at nanometer regime of 10 nm ,7 nm and 5 nm technology are studied here in the educational tool microwind and a comparative and analysis is carried out in this paper for comparison between the different nodes technology of finfet device. from the simulation results, one can conclude that the impact of the time delay and power dissipation product on cmos based finfet device are crutial parameters for improvements of the performance of cmos circuits. we confirm in this study that significant progresses have been made by introducing a new generation of 5 nm finfet device which improves the switching performances and decrease the time delay as compared to different nodes such as 10 nm and 7 nm for cmos circuits. the results in this simulation confirm that the proper selection of supply voltage and geometric parameters is important for obtaining a high speed and stable cmos circuits. acknowledgement: the authors wish to thank pr etienne sicard and mr vinay sharma for their helpful suggestions in this work. performance аnalysis of finfet based inverter nand and nor circuits at 10 nm, 7 nm ... 15 references [1] b. yu, l. chang and s. ahmed, "finfet scaling to 10 nm gate length". in proceedings of the ieee digest. international electron devices meeting", 2002, pp. 251-254. [2] a. lazzaz, k. bousbahi and m. ghamnia, "modeling and simulation of dg soi n finfet 10 nm using hafnium oxide", in proceedings of the 21st ieee international conference on nanotechnology (nano), 2021, pp. 177-180. [3] x. zhang, d. connelly and p. zheng, "analysis of 7/8-nm bulk-si finfet technologies for 6t-sram scaling", ieee trans. electron devices, vol. 63, no 4, pp. 1502-1507, 2016. [4] s. gupta, v. moroz and l. smith, "7-nm finfet cmos design enabled by stress engineering using si, ge, and sn", ieee trans. electron devices, vol. 61, no. 5, pp. 1222-1230, 2014. [5] n. maity, r. maity and s. maity, "comparative analysis of the quantum finfet and trigate finfet based on modeling and simulation", j. comput. electron., vol. 18, no 2, pp. 492-499, 2019. [6] e. sicard and l. trojman, "introducing 5-nm finfet technology in microwind", hal open science, hal0325444, 2021. [7] n. bourahla, a. bourahla and b.hadri, "comparative performance of the ultra-short channel technology for the dg-finfet characteristics using different high-k dielectric materials" , indian j. phys., vol. 95, pp. 1977-1984, 2020. [8] n. weste and d. harris, cmos vlsi design: a circuits and systems perspective, pearson education india, 2015. [9] j. baker, cmos circuit, design, layout and simulation, ieee press series on microelectronic systems, pp. 332-375, 2010. [10] y. eng, l. hu, t. chang, s. hsu, c. chiou, t. wang and c. yang, "importance of $\delta v_ {{\text {diblss}}}/({i} _ {{\text {on}}}/{i} _ {{\text {off}}}) $ in evaluating the performance of n-channel bulk finfet devices", ieee j. electron devices soc., pp.207-213, 2018. [11] m. lundstrom, fundamentals of nanotransistors, world scientific publishing company, vol. 6, 2017 pp. 100-300. [12] n. collaert, high mobility materials for cmos applications, woodhead publishing, 2018, pp. 115-280. [13] y. chauhan, d. lu and s.venugopalan, finfet modeling for ic simulation and design: using the bsimcmg standard, academic press, 2015, pp 72-200. [14] m. tang, f. pregaldiny and c. lallement, "quantum compact model for ultra-narrow body finfet", in proceedings of the 10th international ieee conference on ultimate integration of silicon, 2009, pp. 293-296. [15] e. sicard, "introducing 20 nm technology in microwind", hal open science, hal-03324322, pp.3-20, 2011. [16] e. sicard and s. dhia, "microwind & dsch: version 3". insa, pp.1-90, 2004. [17] r. sharma and s.verma, "comparitive analysis of static and dynamic cmos logic design", in proceedings of the ieee international conference on computing and communication technologies, 2011, pp. 231-234. [18] t. dash, s. dey and s. das, "performance comparison of strained-sige and bulk-si channel finfets at 7 nm technology node ", j. micromech. microeng., vol. 29, no. 10, p. 104001, 2019. [19]l. artola, g.hubert and m.alioto,"comparative soft error evaluation of layout cells in finfet technology" microelectron. reliab., vol. 54, no. 9-10, pp. 2300-2305 ,2014. [20] v. vashishtha and l. clark ,"comparing bulk-si finfet and gate-all-around fets for the 5 nm technology node", microelectron. j., vol. 107, p. 104942, 2021. [21] s. liu, j. yang and l. xu, "can ultra-thin si finfets work well in the sub-10 nm gate-length region? ", nanoscale, vol. 13, no 10, pp. 5536-5544, 2021. [22] d. tripathy, d.acharya and p.rout, "influence of oxide thickness variation on analog and rf performances of soi finfet", fu: elec. energ., vol. 35, no. 1, pp. 001-011, 2022. [23] a. lazzaz, k. bousbahi and m. ghamnia, "optimized mathematical model of experimental characteristics of 14 nm tg n finfet", micro and nanostructures, p. 207210, 2022. [24] n. bourahla, b. hadri and n. boukortt, "impact of high-k dielectric material on ultra-short-dg-finfet performance", in proceedings of the 15th international ieee conference on advanced technologies, systems and services in telecommunications (telsiks), 2021, pp. 78-81. [25] u. das, m. hussain, "benchmarking silicon finfet with the carbon nanotube and 2d-fets for advanced node cmos logic application", ieee trans. electron devices, vol. 68, no 7, pp. 3643-3648,2021. [26] r. vallabhuni, d. sravya and m. shalini, "design of comparator using 18nm finfet technology for analog to digital converters", in proceedings of the 7th international ieee conference on smart structures and systems (icsss), 2020, pp. 1-6. [27] j. jena, d. jena and e. mohapatra,"finfet-based inverter design and optimization at 7 nm technology node", silicon, vol. 14, pp. 10781-10794, 2022. 16 a. lazzaz, k. bousbahi, m. ghamnia [28] s. sinha, g. yeric and v. chandra, "exploring sub-20nm finfet design with predictive technology models", in proceedings of the ieee dac design automation conference, 2012, pp. 283-288. [29] e. sicard and l. trojman, "introducing 5-nm finfet technology in microwind", hal open science, hal0325444, 2021. [30] international roadmap for devices and systems. available at: https://irds.ieee.org/ (2018 edition). [31] c. auth, a. aliyarukunju and m .asoro, "a 10nm high performance and low-power cmos technology featuring 3 rd generation finfet transistors, self-aligned quad patterning, contact over active gate and cobalt local interconnects", in proceedings of the ieee international electron devices meeting (iedm), 2017 pp. 29.1.1-29.1.4. [32] p. vora and r. lad, "a review paper on cmos, soi and finfet technology", design and reuse industry articles, p. 1-10, 2017. [33] m. tang, f. prégaldiny and c. lallement, "explicit compact model for ultranarrow body finfets", ieee trans. electron devices, vol. 56, no. 7, pp. 1543-1547,2009. [34] j. hu and x. yu, "near-threshold full adders for ultra low-power applications", in proceedings of the second ieee pacific-asia conference on circuits, communications and system, 2010, p. 300-303. [35] s. panchanan, r. maity and s. baishya, "a surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length", eng. sci. technol. int. j., vol. 24, no. 4, pp. 879-889, 2021. [36] b. vandana, d. kumar and s. mohapatra, "impact of channel engineering (si1-0.25 ge0.25) technique on gm (transconductance) and its higher order derivatives of 3d conventional and wavy junctionless finfets (jlt)", facta universitatis, series electronics and energetics, vol. 31, no. 2, pp. 257-265, 2018. [37] n. maity, r. maity and s.baishya, "an analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel finfet", j. comput. electron., vol. 18, no 1, pp. 65-75, 2019. [38] s. panchanan, r. maity, "modeling, simulation and analysis of surface potential and threshold voltage: application to high-k material hfo2 based finfet", silicon, vol. 13, no. 10, pp. 3271-3289, 2021. [39] s. panchanan, r. maity and s. baishya, "modeling, simulation and performance analysis of drain current for below 10 nm channel length based tri-gate finfet", silicon, vol. 14, pp. 11519-11530, 2022. [40] l. wang, y. chang and k. cheng, electronic design automation: synthesis, verification, and test, morgan kaufmann (ed), 2009. [41] s. shaheen, g. golan, m. azoulay, "a comparative study of reliability for finfet", facta universitatis, series electronics and energetics, vol. 31, no 3, pp. 343-366, 2018. facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. 133-140 https://doi.org/10.2298/fuee2101133t © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper adaptive method to predict and track unknown system behaviors using rls and lms algorithms teimour tajdari electrical engineering department, engineering faculty, velayat university, iranshahr, iran abstract. this study investigates the ability of recursive least squares (rls) and least mean square (lms) adaptive filtering algorithms to predict and quickly track unknown systems. tracking unknown system behavior is important if there are other parallel systems that must follow exactly the same behavior at the same time. the adaptive algorithm can correct the filter coefficients according to changes in unknown system parameters to minimize errors between the filter output and the system output for the same input signal. the rls and lms algorithms were designed and then examined separately, giving them a similar input signal that was given to the unknown system. the difference between the system output signal and the adaptive filter output signal showed the performance of each filter when identifying an unknown system. the two adaptive filters were able to track the behavior of the system, but each showed certain advantages over the other. the rls algorithm had the advantage of faster convergence and fewer steady-state errors than the lms algorithm, but the lms algorithm had the advantage of less computational complexity. key words: rls algorithm, steepest decent algorithm, lms algorithm, system identification 1. introduction the family of adaptive filters has long been used for system identification [1, 2]. identifying and predicting unknown systems is important when their behavior affects other cooperative systems [3]. this technique has application in tension control in mechanical and civil engineering, as well as in robots and autonomous vehicles. least mean square (lms) and recursive least squares (rls) are useful tools for identifying and tracking the behavior of unknown systems. lms and rls are adaptive filtering algorithms developed based on wiener's filter theory [4, 5]. the adaptive filter can adjust and correct filter coefficients according to changes in unknown system parameters[6]. received august 22, 2020; received in revised form december 15, 2020 corresponding author: teimour tajdari department of electrical engineering, engineering faculty, velayat university, iranshahr, iran e-mail: tajdari.t@velayat.ac.ir 134 t. tajdari the algorithm regularly adjusts the filter coefficients for the incoming samples of the input signal, reducing the difference error between the filter output and the unknown system output at each iteration to the best predicted coefficient that minimizes the error. bernard widrow of stanford university invented the lms algorithm in 1959. it follows the steepest descent algorithm in which the filter is adjusted according to the current time error [7]. mukhopadhyay s. et al. developed the lms algorithm to solve the problem of missing data. they used an unknown input data product with i.i.d. bernoulli's sequence of random variables for modeling input data [8]. to enhance estimation for sparse channel estimation usage, sparse least‐mean mixed‐norm technique has been created [9, 10]. eleyan et al. studied the convergence behavior of the mn-lms algorithm, which performed significantly better than other algorithms at different sparsity and snr [11]. dogariu lm. et al provided a simple adaptive algorithm for the identification of nonlinear systems based on the lms algorithm, where the taylor series expansion was used together with lms to determine the nonlinearities of the system [1, 12]. the rls is an adaptive algorithm that recursively computes coefficients to minimize the weighted linear least squares cost function associated with the input signal. ding f. et al. presented a method based on the identification of the auxiliary model where the unknown coefficients in the data vector are replaced with their estimates, which are computed through the estimates of the previous parameters [5, 13, 14]. mattson p. et al. developed a technique to learn nonlinear models with multiple outputs and inputs so that predictive errors are modeled for the system by applying a latent variable framework. then, convex majorization principles were applied to perform a recursive identification method [15, 16]. elisei c. et al. studied the rls algorithm to identify systems with large parameter spaces. they defined the bilinearterm taking into account the impulse response of the model. they also proposed a variable-regularized estimation model that selfadjusts the coefficients by estimating the signal-to-noise ratio [17, 18]. in this study, lms and rls adaptive algorithms were examined to identify the same unknown system in order to compare their performance. the methodology, results and discussions, and conclusion of this study are provided below. 2. methodology to identify the unknown system, as shown in fig. 1, the same input signal x(n) is provided to the system and the adaptive filter. the adaptive algorithm adjusts the filter coefficients such that the difference error e(n) between the output of the filter y(n) and the output of the system s(n) approaches zero at each iteration of the algorithm. when the error reaches zero, y(n) becomes similar to the unknown system output. in this study, a system that functions as a bandpass filter using an iir filter was designed to represent an unknown system. in addition, an audio signal representing the input signal x(n) was provided. the adaptive filter was designed using lms and rls algorithms, then inspected one fig. 1 adaptive system identification block diagram adaptive method to predict and track unknown system behaviors using rls and lms algorithms 135 by one to identify unknown systems, as shown in fig. 1, and then the results of both algorithms were collected and analyzed to compare the performance of each algorithm. 2.1. system identification using lms algorithm lms is an adaptive filter algorithm used to self-adjust filter coefficients to generate the least squares error between the output and the desired signal. fir filter y(n) with filter coefficient 0 1 -1[ ... ]t nw w w w= is given by ( ) ( )ty n w x n= (1) where ( ) [ ( ) ( -1) ... ( 1)]tx n x n x n x n n= + is the vector of n input signal samples. the least mean square error between system output s(n) and filter output y(n) can be given as follows [19]. 2 22j wp w r= − + (2) where j represents mean square error,  2 is the power of s(n), p represents the crosscorrelation between s(n) and x(n), and r is the autocorrelation of x(n). the dj / dw is calculated as follows. 2 ( ) ( ) ( ) dj e n x n dw n = − (3) assuming eq. 3 in the steepest descent algorithm, the best w(n) for the next iteration is: ( 1) ( ) 2 ( ) ( )w n w n e n x n+ = + (4) where  is the convergence factor and for a 16-bit adc converter it would be as follows [20]. 30 1 2n  = + (5) the lms algorithm requires initializing vector w(n) with arbitrary values, computing e(n) = s(n) − y(n), and then computing w(n+1) for the next iteration. as the iteration continues, the ( )e n approaches zero. 2.2. system identification using rls algorithm in eq. 2, the best approximation to the filter coefficients can be obtained by solving dj / dw = 0 for w, and the result is expressed as w * = r−1p. however, in practical applications, it is impossible to calculate r−1 for many coefficients. the rls algorithm uses the matrix inversion lemma to handle r−1 computational aspects [20, 21]. in this method, r and p are calculated in recursive for, that is, ( ) ( 1) ( ) ( )tr n r n x n x n= − + (6) ( ) ( 1) ( ) ( )p n p n s n x n= − + (7) where the  is called the weighting factor that gives less weight to older error samples exponentially and obtained empirically as 0 1  . solving / 0dj dw = over w gives: ( ) ( 1) ( ) ( )w n w n k n n= − + (8) 136 t. tajdari in which, ( )n and ( )k n are calculated as follows. ( ) ( ) ( ) ( 1)tn s n x n w n = − − (9) 1 1 ( 1) ( ) ( ) 1 ( ) ( 1) ( )t q n x n k n x n q n x n   − − − = + − (10) where, 1 1( ) ( 1) ( ) ( ) ( 1)tq n q n k n x n q n − −= − − − (11) to perform the rls algorithm, it is initially necessary to determine arbitrary initial values for the vector of coefficients w(n) when n = 0, as well as to calculate q(n −1) =  i where i is the identity matrix and  is the inverse of the power of x(n). in each iteration, you need to calculate k(n) and (n) for w(n) as in eq. 9 and eq. 10, then q(n) as in eq. 11. after calculating e(n) = s(n) − y(n), the problem continues in the next iteration. as the iterations continue, e(n) approaches zero and finally y(n) follows s(n) exactly. 3. simulations, results and discussions a test unknown system was configured for the simulation of adaptive identification. an input signal was provided for the process, and then the two algorithms, lms and rls, were used to identify the unknown system, separately. 3.1. presentation of the test unknown system the test unknown system was a 12-order iir bandpass filter with a passband frequency of 500hz to 1000hz and ripple of 1db, and stopband attenuation of 40db. fig. 2 shows the input signal x(n) and its frequency response, filter frequency spectrum, and the resulting signal filtering spectrum. fig. 2 the input test signal ( )x n , and the test unknown system as a bandpass filter adaptive method to predict and track unknown system behaviors using rls and lms algorithms 137 3.2. the lms algorithm implementation results to perform adaptive identification using the lms algorithm, the filter tap was selected to be 51 and the filter coefficient vector w(n) was initialized to zero. if the convergence factor  is chosen to be large, the stability of the filter is weakened. on the other hand, if a very small  is selected, the convergence time increases considerably. here, the  was empirically adjusted to 0.036. the fig. 3 shows the lms results. fig. 3 the lms algorithm system identification results in fig. 3, the upper signal graph shows the first 700 samples for the unknown system output and the lms adaptive filter output. the results show it takes the lms algorithm about 400 samples to simulate the behavior of the unknown system. the middle signal graph shows 700 output samples since 40k samples have already passed, and the adaptive identifier indicates that it operates with a low error in a stable state. the signal graph at the bottom of the figure shows the error between the unknown system output and the lms adaptive filter output at about 80k samples, and shows the error within 10 seconds since the sampling rate is 8000hz. as shown, identification has a large magnitude of error at first and decreases as identification continues, but it always exists. 3.3. the rls algorithm implementation results the rls adaptive identification algorithm was implemented using the same configuration and the same input signal used in the application of the lms algorithm. the filter tap was selected 51 and the filter coefficient vector w(n) was initialized to value of 0. the  weighting factor should not be too small since the lower weight leads to instability. it was decided experimentally to its best performance, which was 0.94. figure 4 shows the results of the implementation of the rls algorithm. 138 t. tajdari fig. 4 the rls algorithm system identification results in fig. 4, the top signal graph indicates the first 700 signal samples from the unknown system output and the rls filter output. as shown, in 51 first sample, the filter output is zero, but then it begins to follow the behavior of the unknown system precisely. the signal graph in the center of the figure shows another 700 signal samples from the unknown system output and the rls filter output, but as the 40k sample has already passed. it shows the rls filter output perfectly overlaps the system output sample, so the system is accurately identified. the signal graph at the bottom of the figure shows the error within 10 seconds of system identification, which shows a very small error. 3.4. discussion of results as the results show, the rls algorithm showed much better system identification ability than the lms algorithm. the lms algorithm took longer to converge than the rls algorithm. also, the steady state error of the lms algorithm was much larger than that of the rls algorithm. this may be due to differences in algorithmic characteristics, where the lms algorithm relies on the steepest descent method to converge filter coefficients to achieve optimized filter weights. the rls algorithm, on the other hand, finds filter coefficients in a recursive manner by minimizing the weighted linear least squares loss function associated with the input signal. therefore, this algorithm involves data from the starting point to the current point. it makes the rls algorithm generate better results compared to the lms algorithm but at the cost of greater computational complexity. adaptive method to predict and track unknown system behaviors using rls and lms algorithms 139 4. conclusion this study compared the performance of two major adaptive filters, the lms algorithm and the rls algorithm, on the subject of identifying unknown systems. system identification is important for controlling and modifying the behavior of the system. adaptive filters have the ability to self-adjust coefficients to mimic the behavior of different systems for a similar input signal. adaptive lms and rls filters were designed to detect an unknown system separately. both algorithms were tested using an input signal intended for both the adaptive filter and the unknown system. the results showed the great performance of both algorithms for system identification. however, the rls filter provided the results with a smaller identification error in contrast to the lms algorithm but at the cost of increased computational complexity. references [1] l. m. dogariu, s. ciochină, c. paleologu, j. benesty, and p. piantanida, "an adaptive solution for nonlinear system identification", in proceedings of the international symposium on signals, circuits and systems (isscs), iasi, romania, 2017, pp. 1-4. [2] p. kshirsagar, d. jiang, and z. zhang, "implementation and evaluation of online system identification of electromechanical systems using adaptive filters", ieee trans. ind. appl., vol. 52, no. 3, pp. 23062314, 2016. [3] a. abid, m. t. khan, h. lang, and c. w. d. silva, "adaptive system identification and severity indexbased fault diagnosis in motors", ieee/asme trans. mechatron., vol. 24, no. 4, pp. 1628-1639, 2019. [4] s. ciochină, c. paleologu, j. benesty, s. l. grant, and a. anghel, "a family of optimized lms-based algorithms for system identification", in proceedings of the 24th european signal processing conference (eusipco), budapest, hungary, 2016, pp. 1803-1807. [5] f. ding, x. liu, and m. liu, "the recursive least squares identification algorithm for a class of wiener nonlinear systems", j. franklin inst., vol. 353, no. 7, pp. 1518-1526, 2016. [6] m. t. m. silva, r. candido, j. arenas-garcia, and l. a. azpicueta-ruiz, "improving multikernel adaptive filtering with selective bias", in proceedings of the ieee international conference on acoustics, speech and signal processing (icassp), calgary, ab, 2018, pp. 4529-4533. [7] s. r. prasad and s. a. patil, "implementation of lms algorithm for system identification", in proceedings of the international conference on signal and information processing (iconsip), vishnupuri, 2016, pp. 1-5. [8] s. mukhopadhyay and a. mukherjee, "imdlms: an imputation based lms algorithm for linear system identification with missing input data", ieee trans. signal process., vol. 68, pp. 2370-2385, 2020. [9] y. li, y. wang, and t. jiang, "sparse least mean mixed-norm adaptive filtering algorithms for sparse channel estimation applications", int. j. commun. syst., vol. 30, no. 8, p. e3181, 2017. [10] w. ma, x. qiu, j. duan, y. li, and b. chen, "kernel recursive generalized mixed norm algorithm", j. franklin ins., vol. 355, no. 4, pp. 1596-1613, 2018. [11] g. eleyan and m. s. salman, "convergence analysis of the mixed-norm lms and two versions for sparse system identification", signal, image and video processing, vol. 14, no. 5, pp. 965-970, 2020. [12] l.-m. dogariu, s. ciochină, j. benesty, and c. paleologu, "system identification based on tensor decompositions: a trilinear approach", symmetry, vol. 11, no. 4, p. 556, 2019. [13] f. ding and t. chen, "identification of hammerstein nonlinear armax systems", automatica, vol. 41, no. 9, pp. 1479-1489, 2005. [14] f. ding, x. wang, q. chen, and y. xiao, "recursive least squares parameter estimation for a class of output nonlinear systems based on the model decomposition", circ. syst. signal pr., vol. 35, no. 9, pp. 3323-3338, 2016. [15] p. mattsson, d. zachariah, and p. stoica, "recursive nonlinear-system identification using latent variables", automatica, vol. 93, pp. 343-351, 2018. [16] p. mattsson, d. zachariah, and p. stoica, "identification of cascade water tanks using a pwarx model", mech. syst. signal process., vol. 106, pp. 40-48, 2018. [17] c. elisei-iliescu, c. paleologu, c. stanciu, c. anghel, s. ciochină, and j. benesty, "regularized recursive least-squares algorithms for the identification of bilinear forms", in proceedings of the international symposium on electronics and telecommunications (isetc), timisoara, 2018, pp. 1-4. 140 t. tajdari [18] c. elisei-iliescu, c. stanciu, c. paleologu, j. benesty, c. anghel, and s. ciochină, "efficient recursive least-squares algorithms for the identification of bilinear forms", digit. signal process., vol. 83, pp. 280296, 2018. [19] a. d. poularikas, "the least mean square algorithm", in adaptive filtering fundementals of least mean squares with matlabunited state of america: crc press, 2015, pp. 203-232. [20] l. tan and j. jiang, "adaptive filters and aplications", in digital signal processing fundamentals and applications 3rd ed. usa: academic press, 2019, pp. 421-474. [21] r. j. schilling and s. l. harris, "adaptive signal processing", in digital signal processing using matlabunited states of america: cengage learning, 2017, pp. 667-760. facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 219-237 https://doi.org/10.2298/fuee2102219p © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper optimal allocation of multiple dgs in rds using pso and its impact on system reliability shradha singh parihar, nitin malik the northcap university, gurugram, india abstract. this article presents the distributed generator (dg) integration in a radial distribution system (rds). the dg penetration changes the single power source to multiple power sources and bidirectional load flow which enhances the system reliability and reduces system power losses. the particle swarm optimization and gravitational search algorithm are implemented for the optimal siting and sizing of one and three dg units in the rds to examine its impact on system reliability and loss reduction. the types of dgs considered are type i (injects real power) and type iv (injects reactive and real power). the constant power is the chosen load model. the reliability indices taken for the analysis of system reliability are average energy not supplied, total energy not supplied and average system interruption duration index. the efficacy of the proposed method is validated on 33-bus in the presence of single and multiple dgs. the significant decrease in system power losses with the upgraded bus voltage profile, system reliability and remarkable annual loss saving is analyzed for type iv dg over type i dg. the results determined are compared to other meta-heuristic approaches as well as analytical techniques to demonstrate the superiority of the proposed methodology. the results are also statistically verified. key words: dg, siting and sizing, pso, gsa, aens, asidi, tens, reliability, radial distribution system 1. introduction the high rate of growing population, industrialization and global economic expansion motivates a massive investment in the reliable power supply. the component failure in the radial distribution system (rds) is the primal cause of power interruption which reduces system reliability and produces a significant impact on distribution utilities and consumers. hence, the need for a reliable power supply has been very important. many corrective measures such as network reconfiguration have been tried out to restore the power supply until the replacement of the failed components using tie and sectionalizing switches. due to the lack of such functionalities, the penetration of distributed generator (dg) in the rds received september 14, 2020; received in revised form january 11, 2021 corresponding author: nitin malik the northcap university, huda sector 23-a gurugram – 122017, india e-mail: nitinmalik@ncuindia.edu 220 s. singh parihar, n. malik plays a vital role in providing reliable supply [1-2]. based on the type of power delivering capability the dgs are classified as mentioned [3] type i (injects real power, power factor (pf)=1): ex. photovoltaic, battery, fuel cell type ii (injects reactive power, pf=0): ex. synchronous capacitor type iii (injects real power, consumes reactive power, pf is leading): ex. induction generator type iv (injects reactive and real power at lagging pf): ex. synchronous generator, wind power the optimal penetration of dg in rds has many advantages like enhancement in bus voltage profile, system reliability and power loss reduction but it may adversely impact the system if not integrated optimally. the dg allocation methods are classified as analytical and meta-heuristic methods. the analytical technique uses mathematical expressions for the computation of the optimal solution. in [4], the authors have proposed an analytical expression to find dg size without evaluating cost benefits associated with it. numerical methods such as mixed integer non-linear programming [5] and kalman filter [6] have been utilized to integrate dg optimally in rds. in [7], the authors have proposed a multiobjective index-based approach to find the optimum size and site of dg in rds with consideration of voltage deviation at the critical node and tail-end nodes simultaneously. a power stability index is developed in [8] to optimally site the dg in rds but considers type i dg only. many meta-heuristics approaches such as ant lion optimization algorithm [9] and non-dominated sorting genetic algorithm-ii [10] have been utilized to solve dg installation issues. a new voltage stability index has been developed for optimal integration of various types of dgs using analytical and particle swarm optimization (pso) approach to analyse system performance [11]. the comparison of two surveys conducted between the canadian and united states utilities in regard to service utility data collection and its utilization is presented in [12] to show the service continuity statistics. authors in [13] demonstrate the effect of location and numbers of dg units on the reliability indices of the rds. the assessment of reliability indices is demonstrated in [14] under uncertainties but not for the multiple dgs. the relationship between dg penetration and power supply reliability of rds has been analysed and presented in [15] but only for the small-scale system. a new methodology is described in [16] to estimate the dg impact on the reliability indices in the presence of system constraints. the penetration of multiple dg units in rds may generate an adverse effect on system reliability due to excessive power injection as shown in [17]. the effect of installing different sizes of dg at different distances from the substation on the reliability indices is demonstrated in [18]. in [19], authors have demonstrated the effect of optimal penetration of multiple dgs on system power losses and reliability index in the existing rds. it has been observed from the previous work, that very few researchers had worked upon the impact of optimal installation of multiple dg units on reliability indicators to analyze the distribution system reliability. in this article, as a first step, the optimal allocation of multiple types of dg units using pso and gravitational search algorithm (gsa) has been carried out in rds considering various operational limits. thereafter, the effect of dg placement not only on system power losses and bus voltage but also on reliability indicators, namely, total energy not supplied (tens), average energy not supplied (aens) and average system interruption duration index (asidi) is carried out. the types of dg taken for this research work are type i and type iv. the efficacy of the presented technique has been tested on ieee 33-bus system. the load model selected for opttimal allocation of multiple dgs and reliabilty analysis 221 this study is constant power type. based on the type of dg integration, two case studies are identified and presented. the main contributions of this article are mentioned below: i. two meta-heuristic techniques have been implemented for the simultaneous siting and sizing of one and three dg units in rds and their results are compared. ii. the impact of type i and type iv dg allocation on reliability indicators such as tens, aens and asidi has also been analysed in addition to system voltage profile and power losses. iii. the percentage real power loss reduction (plr) to penetration level (pl) ratio is determined to show the efficacy of the proposed method over other analytical and metaheuristic methods. the rest of the research article is arranged as follows: the mathematical modeling of load, line and dg is demonstrated in section 2. section 3, section 4 and section 5 explains the development of problem formulation, system reliability indicators and the working of pso and gsa, respectively. the solution methodology for multiple dg units installation using pso approach is discussed in section 6. the result analysis has been discussed in section 7. in section 8, the conclusions of the paper are drawn. 2. mathematical modeling 2.1. line and load model system loads are considered to be concentrated at its nodes. most of the system loads in rds are voltageand frequency-dependent [20]. for the analysis of static load, variation in voltage is taken into account as frequency deviation is insignificant [21]. in this article, the load is modeled as a constant complex power type. the one-line diagram (sld) of a branch connected between i-1th and ith bus is demonstrated in fig. 1. in short-line distribution model, the line-to-ground capacitance is very small and hence neglected [22]. fig. 1 electrical equivalent of one branch from fig. 1, we get 𝑷𝒊 + 𝒋𝑸𝒊 = 𝑽𝒊∠𝜹𝒊. 𝑰𝒊 ∗ (1) where vi is receiving-end bus voltage and vi-1 is sending-end bus voltage. 𝛿𝑖 represents voltage angle at ith bus. qi and pi represents reactive and active power load fed to bus i, respectively. conjugating both sides of eq. (1), we get 𝑃𝑖 − 𝑗𝑄𝑖 = (𝑉𝑖∠𝛿𝑖) ∗. 𝐼𝑖 (2) the receiving-end bus voltage is given as 𝑉𝑖∠𝛿𝑖 = 𝑉𝑖−1∠𝛿𝑖−1 − (𝑅𝑖 + 𝑗𝑋𝑖 )𝐼𝑖 (3) 222 s. singh parihar, n. malik where 𝑅𝑖 and 𝑋𝑖 represents the branch resistance and the branch reactance, respectively and δi-1 shows the voltage angle at i-1th bus. from eq. (2) and eq. (3), the magnitude of receiving-end voltage is determined and given in eq. (4) 𝑉𝑖 = [{(𝑅𝑖𝑃𝑖 + 𝑋𝑖𝑄𝑖 − 1 2 𝑉𝑖−1 2)2 − (𝑅𝑖 2 + 𝑋𝑖 2)(𝑃𝑖 2 + 𝑄𝑖 2)} 1 2 − (𝑅𝑖𝑃𝑖 + 𝑋𝑖𝑄𝑖 − 1 2 𝑉𝑖−1 2 )] 1 2 (4) the branch rpl (𝑃𝑙𝑜𝑠𝑠) and branch reactive power loss (𝑄𝑙𝑜𝑠𝑠) between bus i-1 and bus i is expressed as 𝑃𝑙𝑜𝑠𝑠(𝑖 − 1, 𝑖) = (𝑃𝑖 2+𝑄𝑖 2) |𝑉𝑖|2 . 𝑅𝑖 (5) 𝑄𝑙𝑜𝑠𝑠(𝑖 − 1, 𝑖) = (𝑃𝑖 2+𝑄𝑖 2) |𝑉𝑖|2 . 𝑋𝑖 (6) the lf algorithm applied in the paper is backward-forward (b/f) sweep [23]. a tolerance of 10-4 p.u in bus voltage difference in two successive iterations at all the buses is considered as the stopping criteria. 2.2. dg modeling the dg resources of high rating can lead to situation wherein losses are more than the base case [4]. the dg resources of small size generally operate in constant power mode, that is, the generator bus is being modeled as a constant negative pq load. however, the dg can be modeled wherein dg associated bus is considered as pv bus and the total reactive power penetrated by the dg is kept at a fixed voltage level. according to ieee 1547 standard [24], the utilities do not recommend the dg units to regulate bus voltages in order to avoid their conflict with the existing voltage control schemes [25]. in addition to this, as the amount of reactive power delivered by the generator depends upon the system configuration and cannot be stated in advance. therefore, the dg is modeled as pq load. the system performance in terms of voltage upgradation and loss minimization attained from 3rd type of dg is worst among all other dg types of dg [26]. the change in the load demand at a bus is dependent upon the power injected by the dg. if a dg is placed at bus i, then the equivalent load at the same bus can be articulated as 𝑃𝑖 𝑒𝑞 = 𝑃𝑖 − 𝑃𝐷𝐺𝑖 (7) 𝑄𝑖 𝑒𝑞 = 𝑄𝑖 − 𝑄𝐷𝐺𝑖 (8) where, 𝑄𝐷𝐺𝑖 and 𝑃𝐷𝐺𝑖 represents the reactive and real power penetrated by dg at bus i, respectively. the magnitude of reactive power injected at bus i for a given pf of type iv dg is 𝑄𝐷𝐺𝑖 = 𝑃𝐷𝐺𝑖 . tan (𝑐𝑜𝑠−1((𝑃𝐹)𝐷𝐺)) (9) 3. problem formulation the objective of installing multiple dg units of multiple types in rds is to upgrade bus voltage profile and system reliability with reduction of power losses. the pso and gsa based technique has been implemented for the optimal installation of single and multiple dg considering eq. (10) as the objective function opttimal allocation of multiple dgs and reliabilty analysis 223 𝑂𝑏𝑗𝑒𝑐𝑡𝑖𝑣𝑒 𝑓𝑢𝑛𝑐𝑡𝑖𝑜𝑛 (𝑂𝐹) = 𝑀𝑖𝑛𝑖𝑚𝑖𝑧𝑒 ∑ 𝑃𝑙𝑜𝑠𝑠(𝑖 − 1, 𝑖) 𝑵𝒃−1 i=1 (10) where 𝑁𝑏 is the total buses of the system. the operational constraints are as follows: a) power balance principle: 𝑃𝐺 = 𝑃𝐷 + 𝑃𝑙𝑜𝑠𝑠 (11) 𝑄𝐺 = 𝑄𝐷 + 𝑄𝑙𝑜𝑠𝑠 (12) where 𝑄𝐺 and 𝑃𝐺 represents the generated reactive and real power. 𝑄𝐷 is system reactive load demand and 𝑃𝐷 is system real load demand. b) bus voltage limits: 0.95 𝑝. 𝑢 ≤ 𝑉𝑖 ≤ 1.05 𝑝. 𝑢 (13) c) branch ampacity constraints: 𝐼𝑏𝑟𝑎𝑛𝑐ℎ ≤ 𝐼𝑡ℎ𝑒𝑟𝑚𝑎𝑙 (14) where, 𝐼𝑏𝑟𝑎𝑛𝑐ℎ and 𝐼𝑡ℎ𝑒𝑟𝑚𝑎𝑙 represents the branch current and its thermal limit, respectively. d) constraints on dg power generation: 0 ≤ 𝑃𝐷𝐺𝑖 ≤ ∑𝑃𝐿𝑜𝑎𝑑 (15) 0 ≤ 𝑄𝐷𝐺𝑖 ≤ ∑𝑄𝐿𝑜𝑎𝑑 (16) 0 ≤ 𝑆𝐷𝐺𝑖 ≤ ∑ 𝑆𝐿𝑜𝑎𝑑 (17) where 𝑆𝐷𝐺𝑖 represents the distributed apparent power generation and ∑𝑆𝐿𝑜𝑎𝑑 , ∑𝑃𝐿𝑜𝑎𝑑 and ∑𝑄𝐿𝑜𝑎𝑑 are the system’s total load for apparent, real and reactive power, respectively. e) distribution substation capacity: 0 ≤ 𝑃𝑔 𝑖 ≤ 𝑃𝑔(𝑚𝑎𝑥) i ∈ slack (18) 0 ≤ 𝑄𝑔 𝑖 ≤ 𝑄𝑔(𝑚𝑎𝑥) (19) where 𝑄𝑔(𝑚𝑎𝑥) is maximum reactive power generation and 𝑃𝑔(𝑚𝑎𝑥) is maximum real power generation, at slack bus. 4. system reliability indicators planning procedure uses reliability indicators for deciding new investments in new generation capacities. in this article, the effect of different dg units in the rds is assessed by considering the following reliability indicators: a) total energy not supplied tens is a measure of distribution system in adequacy and is estimated using eq. (20) 𝑇𝐸𝑁𝑆 = ∑ 𝜆𝑎(𝑒)𝑢𝑒 (mwh/yr𝑛𝑙 𝑒=1 ) (20) where, nl is the total load points count, 𝜆𝑎(𝑒) is the unavailability of the load point e (kw) and 𝑢𝑒 is the annual outage time in hours/year. the annual outage time is the summation of total load outages occurred due to branch failure and can be calculated as 224 s. singh parihar, n. malik 𝑢𝑒 = ∑ 𝜆𝑓𝑟𝑒𝑛𝑙 (21) where, 𝑟𝑒 is the repair time (hours) or the total interruption time of the load and 𝜆𝑓 is the failure rate. b) average energy not supplied the aens is estimated using eq. (22) 𝐴𝐸𝑁𝑆 = ∑ 𝜆𝑎(𝑒)𝑢𝑒 𝑛𝑙 𝑒=1 ∑ 𝑁𝑒 (mwh/customer − yr) (22) where, 𝑁𝑒 is the number of customers at e. c) average system interruption duration index the asidi calculates the average duration of the interrupted system load due to the occurrence of the outages. mathematically, it can be given as eq. (23) 𝐴𝑆𝐼𝐷𝐼 = ∑ 𝐿𝑒𝑟𝑒 𝐿𝑇 (hours or minutes) (23) where, 𝐿𝑒 is the load interrupted and 𝐿𝑇 is the total connected load. d) customer average index duration index (caidi) the caidi is the ratio of sum of customer interruption duration to the total number of the customer interruption and is given as eq. (24) 𝐶𝐴𝐼𝐷𝐼 = ∑ 𝑢𝑒.𝑁𝑒 ∑ 𝜆𝑓.𝑁𝑒 (hours/cust − interruption) (24) e) system average interruption frequency index (saifi) the saifi is the average number of interruptions per customer per unit time and is given in eq. (25) 𝑆𝐴𝐼𝐹𝐼 = ∑ 𝜆𝑓.𝑁𝑒 ∑ 𝑁𝑒 𝑛𝑙 𝑒=1 (interruptions/customer-yr) (25) the allocation of dg in rds is a cost-effective solution to enhance system reliability as it is used in the distribution system as an alternative source for restoring power and may supply electric power to the loads that are failed due to faults. hence, the integration of dg decreases the number of total customers not connected to the grid and outage time depending upon their output power which in turn reduces the numerator of all reliability indices mentioned in eq. (20), (22), (23), (24) and (25) thereby enhancing distribution system reliability. 5. optimization algorithms 5.1. pso algorithm pso is a stochastic approach wherein each particle changes its existing state in a multidimensional search space. if 𝑉𝑝𝑑 = [𝑣𝑝1, 𝑣𝑝2 … . . 𝑣𝑝𝑛𝑑 ] and 𝑆𝑝𝑑 = [𝑠𝑝1, 𝑠𝑝2 … . . 𝑠𝑝𝑛𝑑 ] demonstrate the velocity and the position of particle p, respectively; 𝑑 = 1,2, … 𝑛𝑑 and 𝑝 = 1,2, … 𝑁𝑠. here, d signifies the current dimension, ns signifies the swarm size and 𝑛𝑑 is the dimension of the concerned problem. opttimal allocation of multiple dgs and reliabilty analysis 225 𝑣𝑝𝑑 𝑘+1 = 𝑤𝑝𝑣𝑝𝑑 𝑘 + 𝑐1𝑟𝑎𝑛𝑑1(𝑝𝑏𝑒𝑠𝑡𝑝𝑑 − 𝑆𝑝𝑑 𝑘 ) + 𝑐2𝑟𝑎𝑛𝑑2(𝑔𝑏𝑒𝑠𝑡𝑝𝑑 − 𝑆𝑝𝑑 𝑘 ) (26) 𝑆𝑝𝑑 𝑘+1 = 𝑆𝑝𝑑 𝑘 + 𝑣𝑝𝑑 𝑘+1 (27) where, 𝑆𝑝𝑑 𝑘 and 𝑣𝑝𝑑 𝑘 represents the current position and velocity of particle p at kth iteration, respectively. c2 and c1 are the accelerating coefficients for 2nd and 1st particle, respectively. rand1(.) and rand2(. ) are the random numbers distributed uniformly between 0 and 1. pbestpd and gbestpd is the particle’s best position depending upon its personal experience and the global best position of the particle depending upon the experience of the overall swarm, respectively. the 1st and 3rd terms in eq. (26) represents the inertia component and social component, respectively. the inertia weight of the pth particle (𝑤𝑝) decreases linearly with iterations and is mentioned as 𝑤𝑝 = 𝑤𝑝𝑚𝑎𝑥 − (𝑤𝑝𝑚𝑎𝑥−𝑤𝑝𝑚𝑖𝑛) 𝑘𝑚𝑎𝑥 . 𝑘 (28) where, 𝑤𝑝𝑚𝑖𝑛 and 𝑤𝑝𝑚𝑎𝑥 are the min and the max value of wp, respectively. 𝑘𝑚𝑎𝑥 and k represents the maximum and current iteration number. 5.2. gravitational search algorithm gsa is a stochastic metaheuristic approach inspired by the law of gravitational and law of motion. the performance of the object is measured in terms of its mass. the laws results in global movement of all the considered objects towards the object having heavier mass. the agent’s mass is calculated using eq. (29) 𝑀𝑔 𝑘 = 𝑚𝑔 𝑘 ∑ 𝑚ℎ 𝑘𝑁𝑔 ℎ=1 (29) where, 𝑚𝑔(𝑘) = 𝑓𝑖𝑡𝑔 𝑘−𝑓𝑖𝑡𝑤𝑜𝑟𝑠𝑡 𝑘 𝑓𝑖𝑡𝑏𝑒𝑠𝑡 𝑘−𝑓𝑖𝑡𝑤𝑜𝑟𝑠𝑡 𝑘 (30) where, 𝑓𝑖𝑡𝑔 𝑘 and 𝑀𝑔 𝑘 are the fitness value and the mass of agent g at kth iteration. 𝑁𝑔 represents the total number of agents. 𝑓𝑖𝑡𝑏𝑒𝑠𝑡 𝑘 and 𝑓𝑖𝑡𝑤𝑜𝑟𝑠𝑡 𝑘 are the best and the worst fitness value among ng at kth iteration. the force acting between agent g and h as per the law of gravity is given in eq. (31) 𝐹𝑔ℎ𝑑 𝑘 = 𝐺𝑘 . 𝑀𝑔 𝑘.𝑀ℎ 𝑘 𝐷𝑔ℎ 𝑘+ℰ . (𝑆𝑔𝑑 𝑘 − 𝑆ℎ𝑑 𝑘 ) (31) where, 𝐺𝑘 is the gravitational constant at kth iteration. ℰ is a small constant which ensures the denominator is non-zero. 𝐷𝑔ℎ 𝑘 shows the euclidian distance present between the agent g and h. the acceleration of agent g as per the law of gravity is given in eq. (32) 𝑎𝑔𝑑 𝑘 = 𝐹𝑔𝑑 𝑘 𝑀𝑔 𝑘 (32) where, 𝐹𝑔𝑑 𝑘 is the force acting on agent g at iteration k in d dimension. the updated velocity and position of agent g is calculated as 226 s. singh parihar, n. malik 𝑣𝑔𝑑 𝑘+1 = 𝑟𝑎𝑛𝑑. 𝑣𝑔𝑑 𝑘 + 𝑎𝑔𝑑 𝑘 (33) 𝑆𝑔𝑑 𝑘+1 = 𝑆𝑔𝑑 𝑘 + 𝑣𝑔𝑑 𝑘+1 (34) the value of 𝐺𝑘 is set using eq. (35) 𝐺𝑘 = 𝐺𝑜. 𝑒−𝛼 𝑘 𝐾 (35) where, 𝐺𝑜 is the initial value of the gravitational constant. k is the total number of iterations and reduces linearly to 1. the sequence of steps the gsa follows are identification of search space, random initialization of gsa parameters, fitness function evaluation, updation of gsa parameters, determination of force using eq. (31), acceleration using eq. (32) and velocity using eq. (33) followed by updating agent’s position using eq. (34) till the stopping criteria is met. 6. solution methodology for optimal multiple dgs allocation and reliability assessment using pso the pso-based method to allocate multiple dgs optimally in rds for mitigating system power losses and the reliability indicators takes the following steps step i: solve the b/f lf problem for the base case to determine magnitude of system bus voltage and its power losses as mentioned in section 2.1. step ii: calculate reliability indicators: tens, aens, asidi, caidi and saifi. step iii: select pso parameters (swarm size, acceleration coefficients and weight) to minimize the of value. step iv: set iteration counter k as 0 step v: the values of the dg location and size are generated (between zero and sum of system loads (continuous)) with random velocities and positions on the dimension (locations & sizes of type i and type iv dg) as pbest. step vi: repeat the lf algorithm for every particle after placing dg randomly. if all constraints are within limits then compute of for the randomly initialized particles. else, reject the infeasible solution. step vii: the dg site and size providing the lowest of value is considered as gbest and its corresponding position is nominated as the particle best position. step viii: the value of particle’s velocity, particle’s position and its weight are updated using eq. (26), eq. (27) and eq. (28), respectively. step ix: if kmax is achieved, jump to step x. else, increment k and repeat steps iv through ix. a new pbest and gbest is generated and stored if the newly obtained values is found to be superior than the previous values. step x: the best position signifies the optimal sites and sizes of multiple dgs and its corresponding of value represents the minimum total rpl. step xi: calculate the value of tens, aens, asidi, caidi and saifi after optimal penetration of single and multiple dgs of the corresponding type with the values calculated in step ii. opttimal allocation of multiple dgs and reliabilty analysis 227 7. numerical results and discussion this paper demonstrates the effect of optimal installation of different dg units in rds using pso and gsa to mitigate system power losses and upgrade system reliability. the total capacity of the simultaneously placed multiple dgs is not to supersede the total system load. the total system data for 33-bus has been taken from [27]. the ieee 33-bus system has a power demand of 3.715+j2.3 mva and three laterals. the base kv and mva taken for the test system are 12.66 and 100, respectively. the data taken for calculating reliability indicators are mentioned in the appendix section (table 9 and table 10). the total number of interruptions and customer with at least one interruption is considered as 10 and 4012, respectively. the failure rate of the system is assumed to be 0.5 f/yr. the pso and gsa are tested on standard 33-bus rds to verify its robustness. the pso algorithm analyses the impact of single and multiple dgs placement, whereas, the gsa analyses the impact of single dg placement on system’s reliability. the maximum iteration count and swarm size chosen for the pso is 100 and 20, respectively. the values of pso control variables 𝑐1 , 𝑐2 , 𝑤𝑝𝑚𝑖𝑛 and 𝑤𝑝𝑚𝑎𝑥 selected for the fast convergence are 2, 2, 0.4 and 0.9, respectively as in [28]. in gsa, the values of go and α is taken as 100 and 20, respectively as in [29]. the population size, k and dimension selected for the gsa technique is 33, 20 and 1, respectively. the proposed technique is implemented to calculate bus voltages, total system power losses, annual cost of energy loss (acel), annual savings and reliability indicators. the value of acel [30] is calculated using (36) 𝑨𝑪𝑬𝑳 = (∑ 𝑷𝒍𝒐𝒔𝒔 (𝒊 − 𝟏, 𝒊) 𝑵𝒃 𝒊=𝟐 𝑻 ∗ 𝑬 )$ (36) where t and e are annual time duration (8760 hours) and energy cost (0.06 $/kwh), respectively. the comparative analysis of the obtained results has been carried out at the same base voltage and load model. the methodology to integrate multiple dgs in the test system is implemented in matlab. the results of the 33-bus rds before and after penetration of one and three dgs using pso approach are compared and tabulated in table 1. the total system real and reactive power loss in the absence of any type of dg is 210.07 kw and 142.43 kvar, respectively. the value of tens, aens and asidi is also calculated for the uncompensated system and found out to be 8.0475 mwh/yr, 0.0004969 mwh/cust-yr and 0.2794 hours, respectively. the following case studies based on the type of dg penetration are as follows: 228 s. singh parihar, n. malik table 1 results of type i dg installation in 33-bus rds using pso approach base case with dg 1 dg 3 dgs pso optimal dg size in kw (optimal bus) 2605(6) 1067.5(24), 779.7(14), 1091.8(30) minimum bus voltage (vmin) p.u @ bus (improved voltage in %) 0.9042 @ 18 0.9436 @ 18 (4.35%) 0.9729 @ 33 (7.59%) rpl (kw) 210.07 110.00 71.00 rplr (kw) (% reduction in rplr) 100.07 (47.63%) 139.07 (66.20%) reactive power loss (kvar) 142.43 80.82 acel ($) 110413 57816.00 37317.6 annual energy loss savings ($) 52597.00 73095.4 table 2 impact of type i dg installation on reliability indicators for 33-bus rds tens (mwh/yr) aens (mwh/cust-yr) asidi (hours) no dg 8.0475 4.9691e-04 0.2794 one dg pso 2.2230 1.3727e-04 0.0452 gsa 1.8936 1.1693e-04 0.0461 three dgs 1.5682 9.6834e-05 0.0541 7.1. type i dg penetration the optimal position of single dg placement is found out to be bus 6 after applying pso technique with dg size of 2605 kw, whereas, for simultaneous positioning of multiple dgs, the buses 24, 14 and 30 are obtained with a dg capacity of 1067.5 kw, 779.7 kw and 1091.8 kw, respectively (from table 1). the cpu time for the computation of lf in a 33-bus system considering type i dg obtained from the pso approach is 1.15 seconds and found out to give faster convergence as compare to other approaches viz. 4.2651 seconds [8] and 6.9255 seconds [31]. the optimal location and size of single type i dg in 33-bus rds using gsa is bus 6 and 2000 kw, respectively. the effect of penetration of single and multiple dgs on tens, aens and asidi are also analysed and mentioned in table 2. the reduction in the value of reliability indicators after penetrating dgs in rds demonstrates the improvement in system reliability. 7.1.1. effect of type i dg on system power losses the optimal installation of a single dg minimizes the rpl by 47.63%, whereas, in the case of 3 dgs, the value of rpl reduces by 66.20% as illustrated in table 1. this in turn releases the real power demand of 100.07 kw and 139.07 kw after penetration of single and multiple dgs, respectively, at unity power factor. opttimal allocation of multiple dgs and reliabilty analysis 229 7.1.2. effect of type i dg on voltage profile the minimum bus voltage of 0.9042 p.u without dg was attained at bus 18 which got enhanced to 0.9436 p.u at bus 18 and 0.9729 p.u at bus 33 for single and multiple dgs placement with a percentage voltage enhancement of 4.35% and 7.59%, respectively. the proposed methodology meets all the constraints except small voltage violation (lower limit) in case of single type i dg i.e. 5.64% instead of 5% in the case of single dg placement (from table 1). the impact of installing one and three dg on the convergence of bus voltage magnitude for 33-bus rds is presented in fig. 2 which displays that the multiple dg has better bus voltage profile than single dg placement. fig. 2 bus voltage profile without and with one and three type i dgs 7.1.3. effect of type i dg on reliability indicators the impact of single dg allocation on reliability indices in 33-bus rds is carried out using pso and gsa and the values are tabulated in table 2. after locating single dg in the system, the values of tens, aens and asidi decreases with a percentage reduction of 72.37%, 72.42% and 83.82%, respectively for pso, whereas, it is 76.47%, 76.46% and 83.50%, respectively for gsa, w.r.t the base case. the value of tens, aens and asidi becomes 1.5682 mwh/yr, 0.0000968 mwh/cust-yr and 0.0541 hours after the installation of three dgs, respectively (from table 2). the percentage improvement in reliability indices with the penetration of single and multiple type i dgs is illustrated in fig. 3 and clearly infers that the percentage reduction in reliability indices is more with the installation of three dgs for tens and aens as compared to one dg. hence, the injection of real power in the system enhances the system reliability, but excessive real power injection may create an adverse effect on asidi. fig. 3 percentage improvement in reliability indices with single and multiple dgs 230 s. singh parihar, n. malik 7.1.4. effect of type i dg on the cost of annual energy loss the cost of annual energy loss obtained for the base case is $110413.00 which is reduced to $57816.00 and $37317.6 with the installation of one and three dgs, respectively. the annual energy loss saving after single and multiple dg placement is $52597.00 and $73095.4, respectively (from table 1). 7.1.5. result comparison the test results obtained without and with single and multiple dgs placement using pso and gsa are compared to the already existing results and tabulated in table 3. due to varying nature of dg size and real power loss reduction (rplr), a ratio of plr to pl is introduced. the larger ratio indicates the dominance of the method employed to integrate dg optimally. plr is the ratio of rplr considering dg to rpl with no dg. pl is the ratio of real power penetrated by dg to the real power load. the ratio obtained from pso and gsa in the presence of single and multiple dgs is determined to be either equal or superior to the previously published results. it is obvious from the results that, in the presence of three dgs the reduction in power loss (66.20%) is maximum. the acel with the penetration of three dgs is significantly less as compared to a single dg. table 3 comparison of results for multiple type i dgs in 33-bus rds installed dg size in kw (optimal bus) total dg capacity (mw) rpl (kw) plr ratio of plr to pl acel ($) no dg 210.07 110413.00 1 dg proposed method pso 2605(6) 2605 110.00 47.63 0.68 57816.00 gsa 2000(6) 2000 114.60 45.45 0.84 60233.76 ia [32] 2600(6) 2600 111.10 47.39 0.67 58394.16 grid search algorithm [33] 2600(6) 2600 111.00 47.39 0.67 58341.60 pso [34] 3150(6) 3150 115.29 45.36 0.53 60596.42 kha [35] 2590(6) 2590 111.02 47.38 0.53 58352.11 3 dgs proposed method 1067.5(24), 779.7(14), 1091.8(30) 2939 71.00 66.20 0.84 37317.60 pso-cfa [36] 1049.1(10),878.6(25),804.9(33) 2732.6 76.00 62.48 0.84 39945.60 shbat [37] 1190.0(30), 849.0(25), 790.0(13) 2829 72.12 64.34 0.83 37906.27 aco-abc [38] 754.7(14),1099.9(24),1071.4(30) 2926 71.40 64.77 0.81 37527.84 abc [31] 1756.9(6), 575.7(15), 782.6(25) 3115.2 79.20 61.15 0.73 41627.52 ga [39] 1500(11),422.8(29),1071.4(30) 2994.2 106.3 49.61 0.59 55871.28 mocsos [40] 1187.9(13),1197.1(24),1300.2(31) 3685.2 89.40 57.67 0.58 46988.64 mota [41] 980(7),960(14),1340(30) 3280 96.30 54.36 0.56 50615.28 ga/pso [39] 925(11),863(16),1200(32) 2988 124.0 41.22 0.51 65174.40 opttimal allocation of multiple dgs and reliabilty analysis 231 7.2. type iv dg allocation for pso approach, the optimal position after applying proposed methodology to locate a single type iv dg is bus 6 with dg size of 3150 kva, whereas, for the positioning of multiple dgs, the buses 24, 30 and 14 are determined with a dg capacity of 859.2 kva, 1031.6 kva and 605.3 kva, respectively, as mentioned in table 4. the optimal bus obtained using gsa to locate single type iv dg is 6 with a dg capacity of 2828.42 kva. the effect of penetration of single and multiple dgs on each reliability indicator using pso and gsa is provided in table 5. table 4 results of type iv dg installation in 33-bus rds using pso base case with dg 1 dg 3 dg optimal dg size in kva (optimal bus) 3150 (6) 859.2 (24), 1031.6 (30), 605.3 (14) vmin in p.u @ bus (improved voltage in %) 0.9042@18 0.9602@18 (6.19%) 0.9953@33 (10.07%) rpl (kw) 210.07 64.00 17.00 rplr (kw) (% reduction in rplr) 146.07 (69.53%) 193.07 (91.90%) acel ($) 110413 33638.40 8935.20 annual energy loss savings ($) 76774.60 101477.80 table 5 impact of type iv dg installation on reliability indicators 7.2.1. effect of type iv dg on system power losses after optimal penetration of one and three dgs in rds, the losses reduced to 64 kw and 17 kw with a reduction of 69.53% and 91.90%, respectively, as illustrated in table 1 at 0.82 pf [28]. the reactive loss obtained without dg is 142.43 kvar. the power loss reduction attained with the installation of single and multiple type i and iv dgs is demonstrated in fig. 4 which concludes that the allocation of multiple type iv dgs gives the highest reduction in system rpl amongst all. tens (mwh/yr) aens (mwh/cust-yr) asidi (hours) no dg 8.0475 4.9691e-04 0.2794 one dg pso 1.7033 1.0518e-04 0.045287 gsa 1.5702 9.6956e-05 0.045513 three dgs 1.1429 7.0571e-05 0.054032 232 s. singh parihar, n. malik fig. 4 rplr with single and multiple type i & type iv dg penetration the acel after penetration of single and multiple type iv dgs is $33638.40 and $8935.20 which results in the annual energy loss savings of $76774.60 and $101477.80, respectively (from table 4). 7.2.2. effect of type iv dg on system voltage profile the installation of a single dg in 33-bus system improves the magnitude of bus voltage at bus 18 from 0.9042 pu to 0.9602 pu at bus 18 resulting in percentage voltage improvement of 6.19%. in the presence of multiple dgs the system voltage at bus 18 enhances from 0.9042 pu to 0.9953 p.u at bus 33 resulting in percentage bus voltage improvement of 10.07%. the impact of installing single and multiple type iv dgs on the convergence of voltage magnitude at each bus is presented in fig. 5, which demonstrates that the bus voltage profile with multiple dg units is over-represented as compare to one dg placement. fig. 5 comparison of bus voltages in presence of single and multiple type iv dgs penetrations p+jq indicates the system’s nominal loading. the impact of system loading on the magnitude of bus voltage with optimally placed dg (at bus 6) is evaluated by incrementing load gradually at all the buses as mentioned in table 6 [11]. at critical loading, the voltage at bus 6 got reduced from 0.9496 p.u. to 0.7594 p.u. the value of critical loading factor obtained for 33-bus system is 3.405 after which there will be a voltage collapse. the subsequent incorporation of dg enhances the voltage magnitude at all the buses and hence provides stable operation with enhanced system capacity. opttimal allocation of multiple dgs and reliabilty analysis 233 table 6 impact of system loading & type iv dg on voltage for 33-bus [11] system load rpl (kw) reactive power loss (kvar) voltage in p.u @ bus 6 dg size (kva) @ bus 6 p+jq 210.0704 142.4372 0.9496 0 2(p+jq) 1016.33 691.98 0.8894 0 3(p+jq) 3094.5 2122.31 0.8078 0 3.405(p+jq) 4905.40 3382.42 0.7594 0 3.41(p+jq) nc nc nc 0 3.41(p+jq) 2463.5 1755.3 0.8545 1000 3.41(p+jq) 1412.3 1062.1 0.9263 2000 nc: no convergence 7.2.3. effect of type iv dg on reliability indicators the value of tens, aens and asidi obtained from pso method after placement of a single type iv dg is 1.7033 mwh/yr, 0.00010518 mwh/cust-yr and 0.045287 hours which becomes 1.1429 mwh/yr, 0.00007057 mwh/cust-yr and 0.0540 hours in the presence of three dgs, respectively (from table 5). the drop in the reliability indicators shows system reliability improvement. the % improvement in the value of tens and aens incorporating single type iv dg using gsa is 7.81% and 7.82%, respectively. the impact of single and multiple type iv dgs on the percentage reduction in reliability indices is illustrated in fig. 6. the percentage reduction in tens and aens is higher due to the installation of three dgs as compared to one dg, except asidi. the results demonstrate that the value of tens and aens decreases with higher dg penetration, whereas, the value of asidi increases due to excessive real power penetration. fig. 6 percentage improvement in reliability indices with different number of type iv dgs in addition to this, the impact of optimal allocation of three dg (type iv) units on caidi and saifi have also been analysed. for an uncompensated system the values of caidi and saifi is 0.62466 (hours/cust − interruption) and 0.72337 (interruptions/customer-yr) which got reduced to 0.62305 (hours/cust − interruption) and 0.72028 (interruptions/customer-yr), respectively after integration of type iv dg units. these indices are difficult to compare from one utility to another and from one location to another because of the differences in the calculation of the number of customers connected. some utilities determine their number of customers based on the total number of meters connected and some based on customer postal 234 s. singh parihar, n. malik addresses and do not considers the weather conditions and planned outages for reliability calculation. 7.2.4. comparison of results the comparative analysis without and with the integration of single and multiple type iv dgs has been carried out and tabulated in table 7. the value of plr and ratio of plr to pl attained from the proposed method is found out to be the highest among all reported results for one and three dgs. the ratio obtained from gsa for single dg placement is found out to be superior than pso. the presented methodology leads to a superior solution causing minimum annual energy loss in most cases. it is obvious that the vmin and reduction in system rpl attained with multiple dgs of type iv is superior to single dg. table 7 comparison of results for multiple type iv dgs in 33-bus rds installed dg size in kva (optimal bus) total dg capacity (kva) rpl (kw) plr ratio of plr to pl acel ($) no dg 210.07 110412.8 1 dg proposed method pso 3150(6) 3150 64.00 69.53 0.813 33638.40 gsa 2828.42(6) 2828.42 64.55 69.27 0.91 33927.48 ia [32] 3107(6) 3107 67.90 67.85 0.809 35688.24 minlp [42] 3105(6) 3105 67.85 67.84 nr 35661.96 gams [43] 3078(6) 3078 67.80 67.80 nr 35635.68 3 dgs proposed method 859.2(24),1031.6(30),605.3(14) 2496.1 17.00 91.90 1.36 8935.20 tm [41] 705.2(16),705.2(27),1410.4(30) 2820.8 27.4 87.01 1.14 14401.44 dgsi [44] 1208(13), 1208(29),152(31) 2568 49.8 76.22 1.09 26174.88 lsfsa [45] 1382.9(6),551.7(18),1062.9(30) 2997.5 26.7 86.82 1.08 14033.52 mota [41] 880(14),920(25),1560(30) 3360 15.7 92.55 1.00 8251.92 mocsos [40] 926.1(13),1257(24),1481.2(30) 3664.3 15.1 92.83 0.93 7936.56 nr: not reported 7.3. statistical analysis of rpl from table 8, the value of coefficient of variation (cv) of rpl in the presence of single type iv dg is minimum as compared to the other types of dgs. this demonstrates that the type iv dg is capable in reducing the variation in system power losses in distribution feeders around its mean value much more effectively than the type i dg and hence give better security against overheating of the distribution feeders. table 8 statistical results for 33-bus with and without type iv dg using pso technique dg type 𝑃𝑙𝑜𝑠𝑠 (kw) min max mean std cv no dg 0.013 51.896 6.570 11.536 1.756 type i 0.012 15.457 3.425 4.099 1.196 type iv 0.010 9.9412 1.993 2.367 1.187 opttimal allocation of multiple dgs and reliabilty analysis 235 8. conclusion this article presents a comprehensive strategy to optimally allocate multiple type i and type iv dgs in the existing rds to reduce rpl, reliability indicators (tens, aens and asidi) and improve bus voltage profile. the optimal integration of dg units is carried out using pso and gsa based approach which is capable to determine optimal solution with or without few assumptions even in a large search space. the comparative analysis on 33bus system has been carried out for single and multiple dgs placement in the rds. the analysis clearly illustrates that the system performance in terms of reduction in system power losses, enhancement in tens, aens, bus voltage profile and aels is superior for multiple dgs placement when compared to single dg. the results also demonstrated that the penetration of dg resources in rds using pso and gsa method improves tens and aens, but excessive power injection may create an adverse effect on asidi. an approach like gsa founds to provide better results than pso for tens and aens improvement in case of single dg. the optimal integration of multiple type iv dg is found to have many positive impacts on system performance. references [1] c.l.t. borges, "an overview of reliability models and methods for distribution systems with renewable energy distributed generation", renew. sustain. energy rev., vol. 16, no. 6, pp. 4008-4015, august 2002. [2] a. escalera, b. hayes and m. prodanovic, "a survey of reliability assessment techniques for modern distribution networks", renew. sustain. energy rev., vol. 91, pp. 344–357, august 2018. [3] k.m. jagtap and d.k. khatod, "loss allocation in radial distribution networks with various distributed generation and load models", int. j. electr. power energy syst., vol. 75, pp. 173-186, february 2016. [4] n. acharya, p. mahat and n. mithulananthan, "an analytical approach for dg allocation in primary distribution network", int. j. electr. power energy syst., vol. 28, no. 10, pp. 669-678, december 2006. [5] a.c. rueda-medina, j.f. franco, m.j. rider, a. padilha-feltrin and r. romero, "a mixed integer linear programming approach for optimal type, size and allocation of distributed generation in radial distribution system", electr. power syst. res., vol. 97, pp. 133-143, april 2013. [6] l. soo-hyoung and p. jung-wook, "selection of optimal location and size of multiple distributed generations by using kalman filter algorithm", ieee trans. power syst., vol. 24, no. 3, pp. 1393-1400, august 2009. [7] n. mohan, t. ananthapadmanabha and a.d. kulkarni, "a weighted multi-objective index based optimal distributed generation planning in distribution system", procedia technology, vol. 21, pp. 279-286, august 2015. [8] m. m. aman, g. b. jasmon, h. mokhlis and a. h. a. bakar, "optimal placement and sizing of a dg based on a new power stability index and line losses", int. j. electr. power energy syst., vol. 43, no. 1, pp. 1296– 1304, december 2012. [9] e. s. ali, s. m. elazim and a. y. abdelaziz, "ant lion optimization algorithm for optimal location and sizing of renewable distributed generations", renewable energy, vol. 101, pp. 1311-1324, february 2017. [10] m. karimi and m.r. haghifam, "risk based multi-objective dynamic expansion planning of subtransmission network in order to have eco-reliability, environmental friendly network with higher power quality", iet generation, transmission & distribution, vol. 11, no. 1, pp. 261-271, january 2017. [11] s. s. parihar and n. malik, "optimal integration of multi-type dg in rds based on novel voltage stability index with future load growth", evolving system, october 2020. [12] r. billinton and j. e. billinton, "distribution system reliability indices", ieee trans. power deliv., vol. 4, no. 1, pp. 561–568, january 1989. [13] h. falaghi and m. haghifam, "distributed generation impacts on electric distribution systems reliability: sensitivity analysis", in proceedings of the international conference on "computer as a tool", 2005, pp. 1465-1468. http://www.sciencedirect.com/science/journal/01420615 file:///c:/users/shradha/appdata/local/packages/microsoft.microsoftedge_8wekyb3d8bbwe/tempstate/downloads/75: https://www.sciencedirect.com/science/article/pii/s2212017315002571#! https://www.sciencedirect.com/science/article/pii/s2212017315002571#! 236 s. singh parihar, n. malik [14] n. nikmehr and s. najafi-ravadaneghbrown, "stochastic risk and reliability assessments of energy management system in grid of microgrids under uncertainty", journal of power technologies, vol. 97, no. 3, pp. 179–189, november 2017. [15] z. wang, j. li, w. yang and z. shi, "impact of distributed generation on the power supply reliability", in proceedings of the ieee pes innovative smart grid technologies, 2012, pp.1-5. [16] a.c. neto, m.g. silva and a.b. rodrigues, "impact of distributed generation on reliability evaluation of radial distribution systems under network constraints", in proceedings of the international conference on probabilistic method applied to power systems, 2006, pp. 1-6. [17] r. k. mathew, s. ashok and s. kumaravel, "analyzing the effect of dg on reliability of distribution systems", in proceedings of the international conference on electrical, computer and communication technologies, 2015, pp. 1-4. [18] i. waseem, m. pipattanasomporn and s. rahman, "reliability benefits of distributed generation as a backup source", in proceedings of the ieee power & energy society general meeting, 2009, pp. 1-8. [19] s. a. nowdeh et al., "fuzzy multi-objective placement of renewable energy sources in distribution system with objective of loss reduction and reliability improvement using a novel hybrid method", appl. soft. comput. j., vol. 77, pp. 761-779, april 2019. [20] m. e. el-hawary and l.g. dias, "incorporation of load models in load flow studies. form of model effects", iee proceedings cgeneration, transmission and distribution, vol. 134, pp. 27-30, january 1987. [21] m. h. haque, "load flow solution of distribution systems with voltage dependent load models", electr. power systems res., vol. 36, no. 3 pp. 151-156, march 1996. [22] s. s. parihar and n. malik, "optimal allocation of renewable dgs in a radial distribution system based on new voltage stability index", int. trans. electr. energy syst., vol. 30, no. 4, pp. 1-19, february 2020. [23] m. s. thomas, r. ranjan and n. malik, "deterministic load flow algorithm for balanced radial ac distribution systems", in proceedings of the ieee fifth power india conference, 2012, pp.1-6. [24] 547‐2003‐ieee standard for interconnecting distributed resources with electric power systems, ieee standards, pp. 1‐16, 2003. [25] r.a. walling, r. saint, r. c. dugan, j. burke and l. a. kojovic, "summary of distributed resources impact on power delivery systems", ieee trans. power deliv., vol. 23, no. 3, pp. 1636–1644, july 2008. [26] h. pradeepa, t. ananthapadmanabha, r. d. n. sandhya and c. bandhavya, "optimal allocation of combined dg and capacitor units for voltage stability enhancement", procedia technology, vol. 21, pp. 216-223, november 2015. [27] r. ranjan, b. venkatesh and d. das, "voltage stability analysis of radial distribution networks", electr. power compon. syst., vol. 31, no. 1, pp. 501-511, march 2003. [28] s. kansal, v. kumar and b. tyagi, "hybrid approach for optimal placement of multiple dgs of multiple types in distribution networks", int. j. electr. power energy syst., vol. 75, pp. 226-235, february 2016. [29] e. rashedi, h. nezamabadi-pour and s. saryazdi, "gsa: a gravitational search algorithm", information sciences, vol. 179, pp. 2232-2248, june 2009. [30] v. v. s. n. murty and a. kumar, "optimal placement of dg in radial distribution systems based on new voltage stability index under load growth" int. j. electr. power energy syst., vol. 69, pp. 246-256, july 2015. [31] m.p. lalitha, n.s. reddy and v.c.v. reddy, "optimal dg placement for maximum loss reduction in radial distribution system using abc algorithm", int. j. rev. comput., vol. 3, pp. 44–52, january 2010. [32] d. q. hung and n. mithulananthan, "multiple distributed generators placement in primary distribution networks for loss reduction", ieee trans. industr. electron., vol. 60, no. 4, pp. 1700-1708, april 2013. [33] t. gözel, u. eminoglu and m. h. hocaoglu, "a tool for voltage stability and optimization (vs&op) in radial distribution systems using matlab graphical user interface", simul. model. pract. theory, vol. 16, no. 5, pp. 505-518, may 2008. [34] s. kansal, v. kumar and b. tyagi, "optimal placement of different type of dg sources in distribution networks", int. j. electr. power energy syst., vol. 53, pp. 752–760, december 2013. [35] s.a. chithradevi, l.lakshminarasimman, r.balamurugan, "stud krill herd algorithm for multiple dg placement and sizing in a radial distribution system", eng. sci. technol. an int. j., vol. 20, no. 2, pp. 748759, april 2017. [36] k. d. mistry and r. roy, "enhancement of loading capacity of distribution system through distributed generator placement considering techno-economic benefits with load growth", int. j. electr. power energy syst., vol. 54, pp. 505–515, january 2014. [37] c. yammani, s. maheswarapu and s.k. matam, "optimal placement and sizing of distributed generations using shuffled bat algorithm with future load enhancement", int. trans. electr. energy syst., vol. 26, pp. 274–292, april 2016. https://ieeexplore.ieee.org/author/37563564100 https://ieeexplore.ieee.org/author/37288706000 http://www.sciencedirect.com/science/journal/03787796 http://www.sciencedirect.com/science/journal/03787796 https://www.sciencedirect.com/science/journal/1569190x https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=maheswarapu%2c+sydulu opttimal allocation of multiple dgs and reliabilty analysis 237 [38] m. kefayat, a. l. ara and s. a. n. niaki, "a hybrid of ant colony optimization and artificial bee colony algorithm for probabilistic optimal placement and sizing of distributed energy resources", energy conver. manag., vol. 92, pp. 149–161, march 2015. [39] m. h. moradi and m. a. abedini, "combination of genetic algorithm and particle swarm optimization for optimal dg location and sizing in distribution systems", int. j. electr. power energy syst., vol. 34, no. 1, pp. 66‐74, january 2012. [40] s. saha and v. mukherjee, "a novel multiobjective chaotic symbiotic organisms search algorithm to solve optimal dg allocation problem in radial distribution system", int. trans. electr. energy syst., vol. 29, no. 5, pp. 2839-2864, february 2019. [41] n.k. meena, a. swarnkar, n. gupta and k.r. niazi, "multi‐objective taguchi approach for optimal dg integration in distribution systems", iet generation transmission distribution, vol. 11, no. 9, pp. 2418‐ 2428, june 2017. [42] s. kaur, g. kumbhar and j. sharma, "a minlp technique for optimal placement of multiple dg units in distribution systems", int. j. electr. power energy syst., vol. 63, pp. 609–617, december 2014. [43] p. v. babu and s. p. singh, "optimal placement of dg in distribution network for power loss minimization using nlp & pls technique", energy procedia, vol. 90, pp. 441-454, december 2016. [44] p. kayal, s. chanda and c.k. chanda, "an analytical approach for allocation and sizing of distributed generations in radial distribution network", int. trans. electr. energy syst., vol. 27, no. 7, pp. 2322, february 2017. [45] s.k. injeti and n.p. kumar, "a novel approach to identify optimal access point and capacity of multiple dgs in a small, medium and large scale radial distribution systems", int. j. electr. power energy syst., vol. 45, no. 1, pp. 142‐151, february 2013. appendix table 9 number of customers at each bus bus number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 total no. of customers 500 600 750 250 425 220 500 640 800 600 730 640 550 920 120 bus number 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 total no. of customers 60 340 410 230 260 550 650 290 270 700 250 420 720 850 760 bus number 31 32 33 total no. of customers 180 350 660 table 10 customer interruption details at five load points load points unavailable buses off time (min) 1 5, 21, 24, 6, 3 28 2 12, 7, 21, 4, 21 40 3 6, 3, 13, 16, 24 14 4 16, 9, 14, 10, 7 60 5 8, 19, 6, 1, 12 35 11896 facta universitatis series: electronics and energetics vol. 36, no 4, december 2023, pp. 577 588 https://doi.org/10.2298/fuee2304577s © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper development of the algorithm for implementation of energy-efficient compressed air systems with energy recovery milan šešlija1, vule reljić2, valentina mladenović3, miroslav novaković4, zoran jovanović5 1elektroprivreda republike srpske, trebinje, bosnia and herzegovina 2university of novi sad, faculty of technical sciences, department of industrial engineering and management, novi sad, republic of serbia 3technical college of applied sciences at zrenjanin, zrenjanin, republic of serbia 4academy of applied studies šumadija, department trstenik,trstenik, republic of serbia 5university of niš, faculty of electronic engineering, department of control systems, republic of serbia abstract. in order to improve the energy efficiency of pneumatic systems, this paper presents an algorithm for the devlopment and implementation of an energy efficient pneumatic control system with energy recovery of compressed air. two different ways of forming closed pneumatic circuits that reuse already used compressed air are presented. compared to traditional pneumatic control, significant energy savings are achieved. key words: closed pneumatic circuit, energy efficiency of compressed air systems, systematic procedure, algorithm 1. introduction compressed air systems are very reliable and safe for performing many functions in the field of industrial automation, but their economy is rarely taken into account. this leads to the fact that compressed air can, due to improper use, despite all the advantages, become one of the most expensive forms of energy for carrying out work in industrial plants [1]-[4]. in order to avoid this, it is necessary to pay special attention to the design and functioning of this segment of the factory system. received june 14, 2023; revised august 16, 2023; accepted september 03, 2023 corresponding author: vule reljić university of novi sad, faculty of technical sciences, department of industrial engineering and management, trg dositeja obradovića 6, 21000 novi sad, republic of serbia e-mail: vuketa90@uns.ac.rs 578 m. šešlija, v. reljić, v. mladenović, m. novaković, z. jovanović an energy efficient compressed air system is one that is [5]: ▪ appropriately designed, with the aim of reducing the pressure drop, taking into account all elements of fittings, valves, air preparation and pipelines, ▪ regularly monitored with monitoring of specific energy consumption values based on collected data, ▪ well-maintained with all necessary services, replacement of consumable components at scheduled times and testing for equipment that requires it, ▪ used by personnel who are aware of the importance and costs generated in the compressed air system and who are trained to use the given equipment in an appropriate, energy efficient manner, ▪ the subject of a permanent program for the identification and elimination of compressed air leaks. in accordance with the above, it is clear that in every compressed air system, subsequent introduction of measures to increase energy efficiency is necessary, because most systems have evolved from the originally designed state. namely, as new machines that consume compressed air arrive, the requirements for compressed air are increasing and the abovementioned system is being upgraded. such systems can hardly be optimal because they are not subject to a structured design process. therefore, as already mentioned, the subsequent introduction of measures is necessary and applies equally to the production side (compressors, preparation and distribution of compressed air) and to the side of compressed air consumption. accordingly, in this paper, an algorithm for the implementation of energy efficient compressed air systems with energy recovery is presented. this algorithm implies the transformation of existing compressed air systems by installing additional or modifying existing components in order to form a closed pneumatic circuit and increase the energy efficiency of the system. therefore, the main contribution of this paper is to present to the designers a new approach for modifying existing or developing completely new pneumatic control systems, all with the aim of increasing energy efficiency. the paper is organized as follows: section 2 presents the necessary theoretical foundations, materials and methods; in section 3 are shown the most important results of the work and the discussion is carried out; and finally, the most important conclusions are drawn in section 4. 2. methodology in the usual mode of operation of pneumatic control systems, compressed air is released into the atmosphere after use in the consumption part of the system [6], as shown in figure 1a. this discharge of the used air, which is still compressed, represents energy loss [7][12], and the atmosphere is also polluted with the expelled impurities. the main reason for the formation of a closed pneumatic control circuit is to increase the energy efficiency of the pneumatic system [7]-[12]. in addition to the above, there are other benefits such as lower emissions of pollutants into the atmosphere, noise reduction, the possibility of using smaller compressors, etc. there are two basic ways to form a closed pneumatic circuit by recuperating of compressed air, namely [5]: ▪ returning of the used compressed air to the production section, to the suction branch of the compressor (figure 1b), and ▪ returning of the used compressed air to the consumption section (figure 1c). development of the algorithm for implementation of energy-efficient compressed air systems... 579 fig. 1 three different concepts of using compressed air in pneumatic control systems examples of the pneumatic control schemes with the returning of used compressed air to the production and consumption section are shown in papers [13] and [7], respectively. 2.1. returning of used air to the section for the compressed air production compressors are machines used to increase gas pressure and the supply of compressed air begins with production in compressors. namely, compressors suck atmospheric air and increase its pressure to the required level. in order to increase the energy efficiency of the system by shortening the operating time of the compressor, it is possible, as previously mentioned, to bring the already used compressed air from the system, which is released into the atmosphere during the standard mode of operation, to the inlet of the compressor, in addition to the standard atmospheric air [13]. to achieve this, it is necessary to go through several steps: ▪ in the first step, it is necessary to define the minimum values of the operating pressures for starting each of the actuators. ▪ in the next step, it is necessary to modify the compressor in such a way that, in addition to the standard suction from the atmosphere, an alternative suction of air from another source is possible, because there are no commercially available, standard compressors that could do it [13]. the mentioned another source is an additional tank (figure 2, little orange rectangle), which needs to be installed in the existing system, in order to enable the collection of already used compressed air. in addition, it is necessary to add one 3/2way reversible directional control valve, which is connected to the suction branch of the compressor, in order to enable the selection of the air suction method (figure 2, big orange rectangle). 580 m. šešlija, v. reljić, v. mladenović, m. novaković, z. jovanović ▪ after that, it is necessary to transform the existing pneumatic control scheme into a compressed air recovery scheme by selecting the аctuators from which the exhaust air collection will be carried out and adding the appropriate components (in this case, nonreturn valves) in order to obtain a meaningful system. as the existence of air exhaust in the system is mandatory, it is clear that air can not be collected from all actuators. figure 2 therefore shows that air is collected from n actuators (positions 1a1-1an) and that there are m other actuators (positions 2a1-2am) in addition. ▪ in order to enable the smooth operation of the entire system, it is necessary to define the minimum and maximum value of the operating pressure in the additional tank where the air is collected. the minimum value is the value that ensures stable operation of the compressor and it is approximately 0.9 bar [13]. on the other hand, the maximum value is the value at which the dynamic characteristics of the system will not be disturbed, and it must not exceed 52.8% of the actuators inlet pressure value [14]. it is understood that the value of the input pressure is equal to the highest value of all the minimum values that are required to start the actuators. ▪ at the very end, it is necessary to start the system in automatic operation mode and monitor the state of pressure in the additional tank. if the pressure value in the additional tank is within a predefined range, the compressor would only use the alternative suction from the additional tank. also, if the amount of compressed air is excessive, the excess of the collected compressed air will need to be exhausted into the atmosphere. for this reason, it is necessary to install one additional 2/2-way directional control valve (figure 2, little green rectangle), which is connected to tank. otherwise, if the collected amount of air is insufficient, after some time, the compressor has to use the main suction line and ambient air again. fig. 2 concept for transformation of the existing pneumatic control scheme into a compressed air recovery scheme by returning of the used air to the production section development of the algorithm for implementation of energy-efficient compressed air systems... 581 for the sake of easier understanding of the defined mode of operation, figure 3 shows the algorithm for development and control of the energy efficient system with energy recovery of compressed air in such a way that it is returned to the section for the compressed air production. fig. 3 the process of returning of the used air to the production section 582 m. šešlija, v. reljić, v. mladenović, m. novaković, z. jovanović 2.2. returning of used air to the consumption section to collect used compressed air and return it to the consumption part of the system, it is necessary to implement a complex control scheme, and the control of such a system is quite complicated [7]. in order to implement such a control scheme, as in the previous case, it is necessary to go through several steps: ▪ at the very beginning, it is necessary to define the minimum values of the operating pressures, that is, the minimum forces required to start each of the actuators. ▪ in the next step, it is necessary to transform the existing pneumatic control scheme into a scheme with compressed air recovery by selecting actuators from which exhaust air will be collected (figure 4, positions 1a1-1an) and adding appropriate components in order to obtain a meaningful system. in addition, it is necessary to define the actuators that will use the collected compressed air (figure 4, positions 2a1-2am) from the additional tank (figure 4, little orange rectangle) for the working or return stroke in the appropriate work cycles. also, it is possible that there are actuators that work in the traditional operation mode in the system. in the case of actuators from which exhausted air is collected, the mentioned additional components are non-return valves. on the other hand, in the case of actuators that use collected air, it is necessary to add two 2/2-way directional control valves, in order to allow the use of compressed air from two separate sources (figure 4, big orange rectangle). in addition, it is necessary to add one quick exhausted valve to allow unhindered air exhausting and at the same time to speed up the process as much as possible. it is clear that this is not the only solution. for example, it is possible to use or logic valve and 3/2-way directional control valves, but all that would additionally increase the investment costs. ▪ after that, it is necessary to define the minimum and maximum value of the operating pressure in the additional tank in which the air is collected. the minimum value is the value that ensures stable operation of the actuator that uses compressed air from the additional tank at a given time and may vary depending on the system [7]. on the other hand, as in the previous case, the maximum value is the value at which the dynamic characteristics of the system will not be disturbed, and it must not exceed 52.8% of the actuators inlet pressure value [14]. it should be noted that, in this case, it is also assumed that the value of the input pressure is equal to the highest value of all the minimum values required to start the actuators. ▪ at the very end, it is necessary to start the system in automatic mode and monitor the pressure value in the additional tank. if the value of the pressure in the additional tank is within the predefined range, the system will constantly use the collected air for the successful performance of the defined work operations. if it happens that the pressure value in the additional tank exceeds the maximum, in order not to impaire the dynamic characteristics of the system, it is necessary to release all the excess of collected air from the additional tank into the atmosphere. for this reason, it is necessary to install one additional 2/2-way directional control valve (figure 4, little green rectangle), which is connected to tank. on the other hand, if the collected amount of air is insufficient, after some time, the system will again have to use air directly from the compressed air supply. development of the algorithm for implementation of energy-efficient compressed air systems... 583 fig. 4 concept for transformation of the existing pneumatic control scheme into a compressed air recovery scheme by returning of the used air to the consumption section for the sake of easier understanding of the defined mode of operation, figure 5 shows the algorithm for development and control of the energy efficient system with energy recovery of compressed air in such a way that it is returned to the consumption section. 584 m. šešlija, v. reljić, v. mladenović, m. novaković, z. jovanović fig. 5 the process of returning of the used air to the consumption section development of the algorithm for implementation of energy-efficient compressed air systems... 585 3. results and discussion in the manner described in section 2, it is possible to develop and implement pneumatic control schemes and systems with energy recovery of compressed air. thus, more energy efficient systems are obtained in terms of compressed air consumption. namely, in paper [13] it was shown that, by returning of the used compressed air to the production part, up to 24% can be saved, and in paper [7] it was shown that, by returning of the used compressed air to the consumption part, can save up to 37% of energy. of course, it should be borne in mind that the mentioned percentages directly depend on the initial state, the very choice of actuators from which the used compressed air will be collected and, in the case of return to the consumption section, on the choice of actuators that will use the collected air. accordingly, the savings in some cases can be even greater, and it is really justified to talk about significant energy savings by applying the mentioned procedures. what is particularly interesting for analysis is the very way of using the collected compressed air. namely, in figures 3 and 5 it is shown that, in case of exceeding the maximum allowed pressure value in the tank, all excess air must be released into the atmosphere because the dynamic characteristics of the actuator and the smooth operation of the system must not be impaired. this is also a net loss because that compressed air was collected previously during system operation. an alternative option is that, when the upper limit of the operating pressure in the tank is reached, the collection process is stopped and, in the next few cycles of the system, the air from the additional tank is just consumed. however, this entails a higher investment cost because the electrically activated directional control valves would need to be installed on each line leading to the additional tank, that is, between each of the actuators from which the air is collected and the additional tank. if the first option is used, which implies the release of excess air from the additional tank, only one additional control valve is needed, which would allow/interrupt the release of air from the reservoir to the atmosphere, as shown in figures 2 and 4. additionally, the increase in cycle time that occurs in cases where an additional tank is implemented to collect already used air from the system is particularly interesting for analysis. namely, in the paper [7] it was shown that the increase in the duration of the work cycle goes up to 38%. therefore, the productivity of the system is reduced. therefore, on the basis of the above, it is clear that the process of energy recovery of compressed air brings significant energy savings, but that, depending on how the system is designed, there are also negative consequences, in terms of unnecessary release of collected air or extension of the duration of production cycle. all this leads to the conclusion that the system with energy recovery of compressed air needs to be carefully designed in order to use the advantages of recovery in the best possible way, and reduce the disadvantages to the smallest possible extent. for this reason, in the continuation of the paper, an algorithm is given that represents the systematic procedure for the development of an energy efficient system with energy recovery of compressed air (figure 6). 586 m. šešlija, v. reljić, v. mladenović, m. novaković, z. jovanović fig. 6 systematic procedure for the development of an energy-efficient system with the recovery of compressed air the proposed algorithm includes several steps: ▪ in the first step, it is necessary to define the minimum required forces for starting each of the actuators. based on this, a conclusion is made about which actuator requires the highest pressure value, that is, which actuator sets the critical conditions of the system. this operating pressure value is also the lowest possible inlet pressure value at which the entire system can operate without problems. in addition, in this step, a conclusion is made about which movement of actuators require the least force, that is, which work development of the algorithm for implementation of energy-efficient compressed air systems... 587 operations are the easiest to perform. those work operations can potentially be performed by using the compressed air from an additional tank. ▪ in the next step, it is necessary to do a careful analysis of what type of recuperation is possible, that is, whether it is necessary to apply recuperation with the return of the collected air to the consumption section or to the section for compressed air production. it is important to note that the upper value of the operating pressure in the tank, defined as 52.8% of the actuators input pressure value, is identical for both cases and that, as already mentioned, it depends on the critical conditions, that is, on the actuator that requires the highest value of the operating pressure. on the other hand, the lower value, in the case of returning of the used air to the production part, is limited to 0.9 bar, and in the case of returning of the used air to the consumption part, it depends on the actuators that require the least force. if this value is less than 0.9 bar, the wider permissible range of operating pressure is obtained in the additional tank than when returning of the used air to the consumption section. if this value is greater than 0.9 bar, the wider permissible range of operating pressure in the additional tank is when returning of the used air to the section for compressed air production. the width of the permissible operating pressure range in the tank is a very important parameter for choosing the desired recovery mode, but certainly not the only one. it is necessary to additionally analyze the investment costs and draw appropriate conclusions based on that. ▪ after choosing the recovery method, it is necessary to modify the existing control scheme by adding appropriate components in order to obtain a meaningful system and define the actuators from which exhaust compressed air collection will be performed, as shown in figures 2 and 4. ▪ the proposed solution needs to be tested in the continuation of the work. as previously mentioned, three scenarios are possible during the system operation: the pressure value in the additional tank is below the lower limit, it is in the defined range, and it is above the upper limit. in the cases where the value of the operating pressure in the additional tank is below the lower limit, there is not enough air to perform the desired operation, so it is necessary to either restart the main intake (if a system with air return to the production section is used) or use compressed air directly from the supply source (if a system with air return to the consumption section is used). on the other hand, if the value of the operating pressure in the additional tank is above the upper limit, in both cases of recuperation, it is necessary to either stop the collection process until the pressure value in the additional tank falls to the permitted level, or release all the excess air at the appropriate moment in time so that the pressure value fell to the permitted level. based on the above, it is concluded that it would be best if none of these two unwanted situations would occur, that is, the best possible case would be if the pressure value in the additional tank would always be within the defined limits. in that case, a balanced operating mode is obtained, that is, the system approximately consumes as much collected air from the additional tank as was collected during the previous operating cycle in each subsequent operating cycle. ▪ in case of obtaining a balanced operating mode of the system, it would also be the final solution. in case that the balanced operation mode is not obtained in the proposed way, it would be necessary to modify the control scheme again by determining a new group of actuators from which air will be collected and retest the operation of the system. the described procedure should be repeated until a balanced operating mode is obtained. 588 m. šešlija, v. reljić, v. mladenović, m. novaković, z. jovanović 4. conclusion in this paper, a brief overview of the possibilities for implementation of energy efficient compressed air systems with energy recovery is presented. two different ways of forming closed pneumatic circuit by recuperating compressed air (with returning the used air to production or consumption section) as well as the potential energy savings in these cases were analyzed. in accordance with that, a comprehensive systematic procedure for implementation of energy efficient compressed air systems with energy recovery was developed in the form of an algorithm. this algorithm shows how it is possible to modify existing or develop new pneumatic control systems in order to increase their energy efficiency in an optimal way. acknowledgement: this research has been partially supported by the ministry of science, technological development and innovation through project no. 451-03-47/2023-01/200156 “innovative scientific and artistic research from the fts (activity) domain”. references [1] r. saidur, n.a. rahim and m. hasanuzzaman, "a review on compressed-air energy use and energy savings", renew. sust. energy rev., vol. 14, no. 4, pp. 1135–1153, may 2010. [2] d. šešlija, i. milenković, s. dudić and j. šulc, "improving energy efficiency in compressed air systems, practical experiences", therm. sci., vol. 20, no. 2, pp. 355-370, 2016. [3] s. mousavi, s. kara and b. kornfeld, "energy efficiency of compressed air systems", procedia cirp, vol. 15, pp. 313–318, 2014. [4] p. radgen and e. blaustein, compressed air systems in the european union, energy, emissions, savings potential and policy actions. fraunhofer institute for systems technology and innovation: stutgart, germany, 2001. [5] s. dudić, d. šešlija, i. milenković, j. šulc and v. reljić, energetska efikasnost sistema vazduha pod pritiskom. fakultet tehničkih nauka u novom sadu: novi sad, srbija, 2021 (in serbian) [6] p. croser and f. ebel, pneumatics: basic level. festo didactic: denkendorf, germany, 2002 [7] m. šešlija, v. reljić, d. šešlija, s. dudić, n. dakić and z. jovanović, "reuse of exhausted air from multiactuator pneumatic control systems", actuators, vol. 10, no. 6, p. 125, june 2021. [8] a. yang, j. pu, c. b. wong and p. moore, "by-pass valve control to improve energy efficiency of pneumatic drive system", control eng. practice, vol. 17, no. 6, pp. 623-628, june 2009. [9] h. du, w. liu, x. bian and w. xiong, "energy-saving for industrial pneumatic actuation systems by exhausted air reuse based on a constant pressure elastic accumulator", sustainability, vol. 14, no. 6, p. 3535, march 2022. [10] r. dindorf, j. takosoglu and p. wos, "review of compressed air receiver tanks for improved energy efficiency of various pneumatic systems," energies, vol. 16, no. 10, p. 4153, may 2023. [11] j. a. trujillo, p. j. gámez-montero and e. codina macià, "air recovery assessment on high-pressure pneumatic systems," proc. inst. mech. eng. c: j. mech. eng. sci., vol. 231, no. 18, pp. 3370-3381. 2017. [12] v. blagojević, d. šešlija and m. stojiljković, "cost effectiveness of restoring energy in execution part of pneumatic system", j. sci. ind. res., vol. 70, pp. 170-176, feb. 2011. [13] m. novaković, v. reljić, m. šešlija, v. mladenović and z. jovanović, "reuse of exhausted air in closed pneumatic circuit", proceedings of the xvi international saum conference on systems, automatic control and measurements, niš, serbia, november 17th-18th, 2022, pp. 107-111. [14] m. novaković, d. šešlija, s. čajetinac and m. todorović, "impact of capturing used air on the dynamics of actuator drive", control eng. appl. inform., vol. 17, no. 2, pp. 82-89, 2015. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 571-583 https://doi.org/10.2298/fuee1804571f a self organizing map (som) based electric load classification mahdi farhadi birjand university of technology, birjand, iran abstract. it is of vital importance to use proper training data to perform accurate shortterm load forecasting (stlf) based on artificial neural networks. the pattern of the loads which are used for the training of kohonen self organizing map (som) neural network in stlf models should be of the highest similarity with the pattern of the electric load of the forecasting day. in this paper, an electric load classifier model is proposed which relies on the pattern recognition capability of som. the performance of the proposed electric load classifier method is evaluated by iran electric grid data. the proposed method requires a very few number of training samples for training the kohonen neural network of the stlf model and can accurately predict electric load in the network. key words: short-term load forecasting, similar sampling process, kohonen self-organizing map, pattern recognition, electric load classification, load classifier 1. introduction electric load forecasting is of high importance for efficient generation and distribution of electric energy in power grids. therefore, load forecasting is usually performed in different time horizons such as very short-term, short term, medium term, and long term. short-term load forecasting (stlf) refers to the prediction of electric load during one day to one week and is performed in different situations such as for unit commitment, evaluation of net interchange scheduling functions, system security analysis, and control and scheduling of power systems [1, 2]. the stlf models require neural network training using appropriate training data to achieve optimal forecasting. the behavior of load data used in the training process of neural network in the stlf models should be of the highest degree of similarity with the behavior of the data load in the forecasting days. high similarities between the behaviors of training sample days used in the training phase of neural networks and the behavior of forecasting day largely guarantee the accuracy of forecasting. so, finding appropriate training samples is of great importance in the process of stlf.  received august 1, 2017; received in revised form august 23, 2018 corresponding author: mahdi farhadi birjand university of technology, birjand, iran (e-mail: mahdifarhadi.staff@yahoo.com) 572 m. farhadi to design stlf models, some load classification studies are needed to identify the exact patterns consumption of electricity in the network. by accurate recognition of daily power consumption curve behavior in earlier times, the ability to forecast power requirements is provided in short-term period. in fact, daily load classifier provides the capacity to identify the pattern of consumption power and the required knowledge to design and propose efficient models of stlf provides for designers and operators of power grid. clustering techniques are widely used for grouping customers and consumption loads in the network. different classification methodologies based on discriminate analysis, linear regression, and artificial intelligence (fuzzy logic and neural networks) techniques have been proposed in literature [3]. among different neural network classifiers, kohonen self organizing map (som) is one of the most effective methods. kohonen som has two valuable features, namely, pattern recognition and pattern complementarity. these two kohonen som properties are exploited for short-term load classification and for forecasting, respectively. in recent years, classification algorithms have been subject of extensive research activities and these algorithms have been widely used for different applications in the area of electrical engineering. for instance, in [4] a theoretical framework is formulated for customer classification using annual load profiles. it is also demonstrated how to extract characteristic attributes in frequency domain (cafd) to represent signatures for customer classes and subclasses. the cafds are obtained by using a data mining method called cart which is composed of classification and regression tree. these cafds are then used for systematic customer load classification. a method with low computational cost, but yet with sufficient accuracy is proposed in [5] to extract signatures for load classification. this method, instead of utilizing digital signal processing and frequency-domain analysis, quantifies the similarity of voltage–current (v–i) trajectories for different loads and maps v–i trajectories to a grid of cells with binary values. next, graphical signatures can be extracted and be used for several applications. this technique significantly reduces the computational cost compared with the existing frequency-domain signature extraction methods. in [6] an algorithm, which is called isodata, is developed for customer classification and load profiling. this method takes into account the impact of temperature on the loads for classification and filters the impact of outlier samples. a novel iterative active learning technique based on self-organizing map (som) neural network and support vector machine (svm) classifier is proposed in [7]. the technique exploits the properties of svm classifier and that of som neural network to identify uncertain and diverse samples to be included in the training set. it selects uncertain samples from lowdensity regions of the feature space by exploiting the topological properties of som. in addition to the extensive use of classification methods for different applications in electrical engineering, classification methods particularly have been used for load management and load forecasting. for instance, a novel load profile management software framework is presented in [8] for boosting the efficiency of power systems operation. the proposed framework performs real-time encoding and classifies load profiles. the classifier engine is based on an implementation of a locality sensitive hashing algorithm. in [9], the identification of operating electrical appliances inside residential buildings has been addressed. a method is proposed that can identify each appliance from the aggregate an effective self organizing map based model of electric load classification 573 power readings of the electrical measurement panel. the possibility of applying a temporal multi-label classification approach in the domain of non-intrusive load monitoring (noneventbased method) is also investigated. in [10], a non-intrusive appliance load classification and monitoring strategy is proposed for energy management in smart buildings. the use of isodata algorithm for customer classification proposed in [11]. temperature dependency correction and outlier filtering are considered in the proposed customer classification and load profiling method. o.e. dragomir et al in paper [12] have proposed an object-oriented software application using matlab toolbox to classify customers and the results have been assessed for three urban areas in romania in the form of several different scenarios. in this paper, to make a software system to analyze daily electricity usage of network across the country an efficient and flexible load classifier model has been proposed. we implemented the proposed kohonen som model in matlab programming environment. the flexible program of the developed load classifier has the capacity to adjust the classifier accuracy by changing the dimensions of a two-layer kohonen network for different time periods. we propose efficient rules of similar sampling process to train kohonen neural network in the load forecasting models. according to these rules, each of the „normal week days‟, „official holidays‟, „before official holidays‟, „after official holidays‟ and „ramadan days‟ have their own specific behaviors [13]. it is noteworthy that previous author's papers [13], [17] forecast the short-term (the next day) load, while the present paper focuses only on the method of classifying daily electric load and the classification of loads with the same behavior for the time period selected (e.g. one week, one month, or one year, or any desired time interval from one day to several years). although all three papers are based on the kohonen neural network function, two reference articles [13], [17] use the pattern-complement property of kohonen neural network in the process of daily electric forecasting, while the present paper use pattern recognition property of kohonen neural network in order to classification of daily electric load. in fact, the classification technique used in this paper is a prerequisite for finding suitable training patterns for training kohonen's neural network used in the process of electric load forecasting in reference papers [13], [17]. section 2 addresses the structure, specifications, and the algorithm of som network classifier. in section 3, the classifier system which is implemented and designed in matlab programming environment is presented and related input and output parameters are explained. in section 4, the proposed classifier program is evaluated, and its performance is verified by sampling the classifier in monthly time intervals of network data of iran. in section 5, the advantages of the proposed model and the implemented classifier program of som and the sampling process are discussed. an effective method called similar sampling method is introduced to specify the pattern of an appropriate training sample to train kohonen neural network in the stlf models. in section 6, the method for correcting the predicted load based on the fuzzy expert system is briefly described, and finally, the paper is concluded in section. 574 m. farhadi 2. kohonen self-organizing-map neural network kohonen is a specific type of som which is capable of classifying complex sets of patterns in an unsupervised way [14]. this classifier extracts some classification criteria from the data and uses it in an implicit manner. to perform the classification, it spans input space over output space of a lower dimension, while still preserving the topological features of the patterns in the input space. a set of elements so called neurons, which are illustrated over a plane or a line in a rectangular or hexagonal shape, represent the output space. fig. 1 shows a neighborhood function which is defined in the output space. the internal connections and links of the self-organized network must incorporate the important properties, patterns, categories, regularities, and correlations which are extracted from the input data. the neurons self-organize themselves based on the inputs as external stimuli [15]. som architecture consists of a two-layered neural network. there are n neurons in the input layer, each of which is associated to one input variable. the output layer consists of neurons, which are spatially distributed along a 2d grid. fig. 1 kohonen neural network the ith input neuron and the jth output neuron are connected together by a weight wij. the jth output neuron represents the average prototype vector of the category, and the reference weight vector wj called codebook [15]. the steps of som algorithm are as follows [16]: step 1: initialize neuron weights step 2: select input vector step 3: calculate a distance between any neurons and the input vector step 4: select the nearest output neuron step 5: adjust the output neuron and its neighbors step 6: repeat the process from step 2 winner neuron neighborhood area input vector n m an effective self organizing map based model of electric load classification 575 3. som electric load classifier in order to implement an electric load classifier, we created a self-organizing layer of kohonen with adjustable dimensions of m×n and implemented the training algorithm of som in matlab programming environment. in the implemented classifier program, input and output parameters of classifier algorithm is defined. after finishing the classifier process, the similar days are assigned to one neuron or close neurons of the two-layered self-organizing kohonen. 3.1 matlab software matlab provides a powerful environment for numerical computations [16], data analysis, simulations, algorithm implementation, programming development, and rather easier model implementation compared to other programming languages. in this paper, the classifier has developed using matlab programming language based on the kohonen classification algorithm, instead of using the neural network library of matlab. in addition, a matlab gui has developed which provides an interface to receive inputs and illustrate outputs of the proposed classifier. our implemented software provides a flexible and powerful environment. 3.2. classifier's structure as mentioned earlier, the structure of the proposed classifier is formed by an autonomous kohonen network with adjustable and flexible set of m×n neurons according to fig. 1. the accuracy of the classifier is adjusted by changing the dimensions of the kohonen network and the number of neurons which are located in the network. the classifier module which we implemented in matlab is shown in fig. 2. fig. 2 classifier module 576 m. farhadi input and output parameters of the classifier program are listed in the following: 3.2.1. inputs as shown in table 2, in addition to the dimensions of the inputs of the kohonen network such as m and n parameters, other inputs of the classifier include calendar inputs of the program are the first date, the last date and the number of days. other input quantities of the classifier algorithm include the number of load values (which is fixed value equal to 24), learning cycle, start value of the learning rate, eht end value of the learning rate, eht start value of the neighborhood radius, and the end value of the neighborhood radius. 3.2.2. outputs as shown in table 2, the outputs of the classifier program include the number of classes, selected neurons which is equal to the number of classes, and empty neurons. 3.3. model's structure according to fig. 3 the inputs of the som network are two vectors of normalized active power consumption during 24 hours in iranian power grid network. as shown in fig. 3 the classifier model receives two vectors of length 24, loadnormal (d1) and load-normal (d), where the vectors represents normalized electric load in consequent days d-1 and d (d = 2,…,365), respectively. these values of vectors for a period of one year would be used for the classification of the daily electric load vectors [13, 17]. fig. 3 the load som model in the classification process these normalized inputs were calculated as follows: ( 1) ( 1) / ( ( 1))load normal d l d average l d     (1) ))1((/)()(  dlaveragedldnormalload (2) an effective self organizing map based model of electric load classification 577 where l (d1) and l (d) represent the loads for the pre-forecasting and forecasting days, respectively, as the following: )]1(24)1(3)1(2)1(1[)1(  dldldldldl  (3) )](24)(3)(2)(1[)( dldldldldl  (4) the normalized loads of the previous and present days could be obtained by dividing 24 hourly loads of the previous and 24 hourly loads of the present days by the average applied load of the previous day. therefore, training of all the samples of different years could be performed concurrently by the omission of the load growth. 4. validation of the classifier model the proposed classifier has flexible classifier capability in all electric networks that follow persian official calendar. in order to validate the classifier operation of the implemented model, the data of electric load of iran network is used which follow the persian official calendar according to table 1. according to the persian official calendar, saturday to wednesday are working days, thursday is half-holiday working day, and friday is the official weekend holiday. it is noteworthy that official holidays are days according to the persian official calendar in various occasions such as national celebrations, religious celebrations, national mourning, religious mourning, etc. and are divided in two groups of official solar holidays and official lunar holidays. official solar holidays include national celebrations and mourning that happens in specific times of the solar persian year. lunar official holidays also include religious mourning and celebration which happens with 11day difference of days between lunar and solar calendar in variant times of a persian solar year. table 1 the months of a year based on persian official calendar. in this paper, the classifier is evaluated in a time interval of 10 years from 1370 to 1380 (thursday, march 21, 1991 to wednesday, march 21, 2001). the classifier used hourly active power consumption (in mega watts) in the iranian electric grid for the classification, training and forecasting purposes. the electric load consumption in the iranian nationwide grid follows a considerably nonlinear pattern and composed of base loads and peak loads. kohonen som in general has scalability problem, however, the volume of the data which is required for the training of the model to be used for the specific application year first half of a year second half of a year season spring summer autumn winter no 1 2 3 4 5 6 7 8 9 10 11 12 month f arv ard in o rd ib eh esh t k h o rd ad t ir m o rd ad s h ah riv ar m eh r a b an a zar d ey b ah m an e sfan d 578 m. farhadi which is addressed in this paper is not big (maximum 365×24 data points). therefore, there is not any scalability problem in this case study and no technique is needed to manage the increasing size of the input data. in this study, due to the high volume of output tables and curves, samples of the results for monthly experiments are provided for the classifier of days in bahman of 1380 from 1/11/1380 to 1/12/1380 (from monday, january 21, 2002 to wednesday, february 20, 2002). in this experiment, the curves of daily load of the network are classified in a two-dimensional array with dimensions of 6×6. the input parameters of the classifier are adjusted completely according to table 2. table 2 input parameters of the classifier based on kohonen self-organizing network by running the classifier module which we implemented in matlab (the interface is shown in fig. 2), the output numerical results are inserted according to the classifier curves based on the number of established classes. as shown in fig. 4 , the som network assigns 21 of the established classes into four distinctive groups such as after official holidays, official holidays, before official holidays and normal working days (from sunday to wednesday). the neurons related to each of these classes are illustrated, respectively, by yellow, red, blue and green color. the dates of the days in each class of the som network of fig. 4 are shown in table 3. also, the curves of daily average load related to four sample classes of the 21 established classes are shown by the colors related to each class in fig. 4. the displayed classes such as 1, 16, 21 and 4 include after official holidays, official holidays, before official holidays and normal days. according to the classifier results in this example, 31 sample days are assigned to 21 classes. among the established classes, a few classes had the highest share of a specific type of days. for example, out of 21 established classes, four classes such as 1, 2, 5 and 8 included after official holidays, two classes such as 16 and 17 included official holidays, three classes such as 19, 20 and 21 included before official holidays and eleven classes included the remained days of normal days. it is noteworthy to mention that the association of classes to neurons is such that the adjacent neurons represent days which have relatively similar electric load patterns. in particular, the class associated to saturday is beside the class of after official holiday; the classerepresenting tuersday is beside that of before official holidays; and the classcoresponding friday is near that of official holiday. in addistion, normal working days in the middle of the week including sunday, monday, tuesday and wednesday are located in their own specific classes. classification input parameters first date 1380/11/1 learning cycle 7 last date 1380/12/1 start value of learning rate 0.9 number of days 31 end value of learning rate 0.1 number of load value 24 start value of neighborhood radius 10 m 6 end value of neighborhood radius 1 n 6 an effective self organizing map based model of electric load classification 579 fig. 4 two-dimensional neural network som classifier with dimensions of 6×6 for the month of the bahman of 1380. by increasing the number of classifer days, the dimension of kohonen network is increased. increasing the dimensions of a kohonen network, i.e. increasing the number of neurons in the network, leads to higher accurancy of the classifier. by distributing the input sample days between more neurons, more classes with lower sample patterns would be created. therefore, the neurons in each class would have higher similarity compared to the case with a network with lower dimension. table 3 dates of som network classifier with dimensions of 6×6 for bahman of 1 class 5 after holiday sat 80/11/13 class 4 normal day mon 80/11/1 tues 80/11/2 wed 80/11/3 mon 80/11/8 class 3 normal day tues 80/11/30 class 2 after holiday tues 80/11/23 class 1 after holiday sat 80/11/20 sat 80/11/27 class 8 after holiday sat 80/11/6 class 7 normal day tues 80/11/9 wed 80/11/24 class 6 normal day mon 80/11/29 class 12 normal day sun 80/11/7 tues 80/11/16 class 11 normal day sun 80/11/14 class 10 normal day wed 80/11/10 sat 80/11/27 class 9 normal day wed 80/12/1 class 15 normal day sun 80/11/28 class 14 normal day wed 80/11/17 class 13 normal day mon 80/11/15 class 16 holiday fri 80/11/5 fri 80/11/12 fri 80/11/19 mon 80/11/22 class 21 before holiday thurs 80/11/4 thurs 80/11/14 class 20 before holiday thurs 80/11/18 class 19 before holiday thurs 80/11/25 class 18 normal day sun 80/11/21 class 17 holiday fri 80/11/26 580 m. farhadi the curves of daily average electric loads related to four sample classes are shown in fig. 5. fig 5 the curves of daily average electric load related to four sample classes: (a) class 1: after holidays (b) class 4: normal days (c) class16: holidays (d) class21: before holidays 5. similar sampling method for stlf although none of the outputs of the som classifier is directly used for the prediction purpose, the results of the som network classification process can be used as an effective way for sampling the appropriate training patterns for training and forecasting 24-hour active power consumption of the nationwide electricity. this can be used in a separate som network. the details of the training and forecasting processes of this som network are presented by the same authors in [13]. according to the outcomes of the classifier, every normal day of a week has its specific load consumption curve and holidays have distinguished ones. in the similar sampling method, the maximum of a sample is used to train kohonen som neural networks. maximum 17 training samples have been selected in the time interval of two weeks before forecasting day and two weeks after that in three past years according to similar calendar features of the forecasting day; so that the date of the forecasting day is in the center of these four weeks [13]. given the possibility of changing the behavior of load curves over many years, using the samples of many years away may degrades the results of load forecasting; therefore, the samples of three years ago are used to train neural networks. for example, to forecast tuesday in date 5/04/1380 (26/06/2001), the samples of monday and tuesday are used in the time interval of 22/03/1380 (12/06/2001) to 4/04/1380 (25/06/2001), 22/03/1379 (11/06/2000) to 22/04/1379 (12/07/2000), 22/03/1378 (12/06/1999) to 22/04/1378 (13/07/1999) and 22/03/1377 (12/06/1998) to 22/04/1377 (13/07/1998) in order to train kohonen neural networks. the average annual mean of the mape (mean absolute percentage error) index to predict the load of the normal days of the years 1380 (from 21/03/2001 to 20/03/2002), 1381(from 21/03/2002 to 21/03/2003) and 1382 (from 21/03/2003 to 19/03/2004) are an effective self organizing map based model of electric load classification 581 1.83%, 1.77%, and 1.29%, respectively [17]. the details of load forecasting model incorporating temperature degree are discussed by the authors in [13]. 6. fuzzy expert system for stlf a fuzzy-expert system adjusts the primary predicted load for special days by taking into account the modifications in the load which happened in same day‟s load behavior. the relative difference between the actual and forecasted hourly loads of the same day is defined as relative gap regardless of the possible influence of a holiday [15, 16] and calculated via the following formula: ( ) ( ) re ( ) 100(%) ( ) load i load i real forecast lative gap i load i forecast    (5) where load real(i) and load forecast(i) represent the actual and forecasted loads for hour i, respectively. it's worth noting load forecast(i) in the formula (5) is the same forecasted load which resulted from kohonen neural network. the input variables of a fuzzy system are the day type (day) and day-night hours (hour) (which specifies the time of a particular event) and its output variable is the relative gap which is represented by adding to or subtracting from the primary predicted load for the purpose of a more precise forecasting. finally the ultimate load to be forecasted is acquired by the following formula: 100 )()(re )()( i forecast loadigaplative i forecast loadiloadfinal   (6) a complete description of the predicted load correction process based on the fuzzy system is available in the reference [17]. mape of the initial forecasted load by kohonen neural network and the final forecasted load by the fuzzy-expert system for official holidays in the year 1380 are respectively 3.19% and 1.78% [17]. the complete numerical results of this studies are presented by the author in references [13,17]. 7. conclusion we implemented a som classifier using matlab coding environment and performed numerical tests for the validation of the classifier. the flexibility, efficiency, and usefulness of the proposed classifier program would make it a suitable solution to be used in the power industry. the flexibility of the proposed classifier program due to the capability of changing the dimensions of the kohonen network provides the possibility to adjust and increase the accuracy of electric load classifier by increasing the dimensions and the number of neurons of the neural network in an optimal form. 582 m. farhadi according to the outcomes of the classifier program, each working normal day (saturday to friday) has its own specific load curve. also, the curves of power consumption in working day in the mid-week from sunday to wednesday have high similarity. the curves of load consumption in official holiday and official working days of a week have completely different patterns. the official holidays' behavior is relatively similar to its nearest friday. also, the curve of load consumption in the days before working days and the ones after official days are completely different. the electric consumption pattern of working days before official holidays is considerably similar to that of the nearest thursday, and the electric consumption pattern of the working day after official holiday is similar to that of the nearest saturday before it. in addition, in the curve of morning consumption during the month of ramadan in which people pray early in the morning and late night, a relative peak of power consumption is observed. in the different seasons of a year, the curve of load consumption is changed according to different factors in each season such as the length of daytime. over the time, the average load consumption is increased by increasing the population and the economic growth which results in load growth in each year. all these factors should be considered in the modeling of load consumption. in summary, there are ten classes for electric load consumption in iranian power grid including normal working days a week (saturday to friday) and specific days (official holiday, before official holiday and after official holiday). in order to design models to forecast electric load based on kohonen neural networks, ten sub-models related to all type of days are created, and the load patterns for each class according to similar sampling process are used to train and forecast the neural networks. the similar sampling process with maximum 17 training samples and high accuracy and low computation time is able to supply the training data which is required for the process of electric load forecasting and benefits the variant models of kohonen self-organizing neural networks. in addition to the valuable capability of the proposed classifier program to perform load forecasting in an industrial scale, the insightful outcomes of the proposed program are other valuable advantages of the implemented code to identify the behavior of power consumption curve in a power network desired which need to be studied by designers and the users of the power network. acknowledgement: the paper is a part of the research work within the project supported by industrial parks company of khorasan e jonoobi province, birjand, iran. the author would like to thank the manager and the experts of the mentioned company. references [1] g. dudek, "artificial immune system with local feature selection for short-term load forecasting," ieee transactions on evolutionary computation, vol. 21, no. 1, pp.116-130, feb. 2017. [2] h. quan, d. srinivasan, a. khosravi, "short-term load and wind power forecasting using neural network-based prediction intervals", ieee transactions on neural networks and learning systems, vol. 25, no. 2, pp. 303-315, feb. 2014. [3] s. v. verdú, m. o. garcía, c. senabre, a. g. marín, f. j. g. franco, “classification, filtering, and identification of electrical customer load patterns through the use of self-organizing maps,” ieee transactions on power systems, vol. 21, no. 4, pp. 1672-1682, 2006. an effective self organizing map based model of electric load classification 583 [4] s. zhong, k. s. tam,”hierarchical classification of load profiles based on their characteristic attributes in frequency domain,” ieee transactions on power systems, vol. 30, no. 5, pp. 2434-2441, sep. 2015. [5] l. du, d. he, r. g. harley, and t. g. habetler, “electric load classification by binary voltage-current trajectory mapping,” ieee transactions on smart grids, vol. 7, no. 1, pp. 358-365, jan 2016. [6] l. du, j. a. restrepo, y. yang, r. g. harley, t. g. habetler, “nonintrusive, self-organizing, and probabilistic classification and identification of plugged-in electric loads,” ieee transactions on smart grid, vol. 4, no. 3, pp. 1371-1380, sept. 2013. [7] s. patra, l. bruzzone, “a novel som-svm-based active learning technique for remote sensing image classification,” ieee transactions on geoscience and remote sensing, vol. 52, no. 11, pp. 6899-6910, nov. 2014. [8] ervin d. varga, sándor f. beretka, christian noce, and gianlucasapienza,"robust real-time load profile encoding and classification framework for efficient power systems operation", ieee transactions on power systems, vol. 30, no. 4, pp.1897-1904, july 2015. [9] kaustav basu, vincent debusschere, seddik bacha, ujjwal maulik, and sanghamitra bondyopadhyay, "nonintrusive load monitoring: a temporal multilabel classification approach", ieee transactions on industrial informatics, vol. 11, no. 1, pp. 262-270, feb. 2015. [10] dawei he, liang du, yi yang, ronald harley, and thomas habetler, "front-end electronic circuit topology analysis for model-driven classification and monitoring of appliance loads in smart buildings", ieee transactions on smart grid, vol. 3, no. 4, pp.2286-2293, dec. 2012. [11] antti mutanen, maija ruska, sami repo, and pertti järventausta," customer classification and load profiling method for distribution systems", ieee transactions on power delivery, vol. 26, no. 3, pp. 1755-1763, july 2011. [12] o.e. dragomira, f. dragomirb, m. radulescuc, matlab application of kohonen selforganizing map to classify consumers‟ load profiles. itqm, computer science 31, pp. 474 479, 2014. [13] m. farhadi, s.m. moghaddas tafreshi, effective model for next day load cureve forecasting based upon combination of perceptron and kohonen anns applied to iran power network. in proceedings of the ieee, intelec, rome, italy, sep 30 oct 4, 2007. [14] s. valero, j. aparicio, c. senabre, m. oritz, j. sancho, and a. gabaldon, "comparative analysis of self organizing maps vs. multilayer perceptron neural networks for short-term load forecasting," in proceedings of the international symposium on modern electric power systems (meps), 2010, no. 1, pp. 1-5. [15] j. llanos, d. sáez, r. palma-behnke, a. núñez, g. jiménez-estévez. load profile generator and load forecasting for a renewable based microgrid using self organizing maps and neural networks, in proceedings of the ieee wcci, 2012. [16] k.i. kimi, c. h. jini, y. k. leei, k. d.kim, k.h.ryui. forecasting wind power generation patterns based on som clustering. awareness science and technology (icast), 2011. [17] m. farhadi, m. farshad," a fuzzy inference self-organizing-map based model for short term load forecasting" in proceedings of the 17th conference on electrical power distribution networks (epdc), 2-3 may 2012, tehran, iran. http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=6156580 http://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=6241680 instruction facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 157-172 https://doi.org/10.2298/fuee2102157a © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd review paper triboelectric nanogenerators (teng): factors affecting its efficiency and applications deepak anand, ashish singh sambyal, rakesh vaid department of electronics, university of jammu, jammu-180006, india abstract. the demand for energy is increasing tremendously with modernization of the technology and requires new sources of renewable energy. the triboelectric nanogenerators (teng) are capable of harvesting ambient energy and converting it into electricity with the process of triboelectrification and electrostatic-induction. teng can convert mechanical energy available in the form of vibrations, rotation, wind and human motions etc., into electrical energy there by developing a great scope for scavenging large scale energy. in this review paper, we have discussed various modes of operation of teng along with the various factors contributing towards its efficiency and applications in wearable electronics. key words: teng (triboelelctric nanogenerator), ptfe (poly tetra fluoro ethylene), tet (triboelectric textile), stet (single layer triboelectric textile), pdms (polydimethyl siloxane), pmma (polymethyl methacrylate) 1. introduction with the increase in the energy requirement, various non-renewable resources of energy are depleting day by day causing serious environmental conditions. solar and wind energies are the targeted renewable sources of energy to provide power in the gigawatt scales. high power density, high efficiency and low cost are the main requirements to harvest these energy sources. for the welfare of the society, it is necessary to find a new and high efficient energy technology that can be able to harvest the energy available in the environment which could be harvested easily to act as prominent source for energy harvesting system [1-4]. all these power sources should be easily available, sustainable, and maintenance-free as well as pollution free. most of the present day electronic devices use batteries as external power sources with a short span of life time. till date electromagnetic-induction, piezoelectric and electrostatic effects were the main mechanisms used for major energy harvesting techniques developed during the last few decades [5-11]. more recently, a new energy technology has been invented for harvesting environmental energy known as tribo-electric nanogenerators (teng) which converts the ambient mechanical energy into electrical energy [12-16]. teng received february 24, 2021 corresponding author: rakesh vaid department of electronics, university of jammu, jammu 180006, (j&k), india e-mail: rakeshvaid@ieee.org 158 d. anand, a. singh sambyal, r, vaid works on the principle of triboelectrification in conjunction with electro-static induction. the concept of teng was demonstrated by wang et. al in the year 2012 and since then it has attracted the energy industry to meet the large scale energy demand. various device structures based on triboelectric-effect and electro-static induction have been reported utilizing mechanical energies from vibrations [17-20], human-motions [21-22], rotation [23-24], wind [25-26], and walking [28]. in this review paper, we have described an overview of the progress in the teng based devices. we have also discussed the various modes of operation, energy harvesting source along with different parameters affecting its efficiency and applications. 2. fundamental modes of teng charge generation takes place between two different materials having distinct affinity to electrons when they are brought in contact with each other and then separated is known as triboelectric effect. when the materials are separated from each other it results in the generation of potential on the surface of two materials. on the other hand, electrostatic induction is the phenomenon of generating electricity when the electrons from one electrode flow to the other electrode through external load to bring equilibrium in the potential difference. in teng both triboelectric effect and electrostatic induction are used to convert the mechanical energy into electrical energy. figure 1 below demonstrates the various fundamental modes of teng such as verticalcontact separation mode [37-40], sliding mode [41-42], single electron mode [43-46] and freestanding triboelectric-layer mode [47-52]. fig. 1 fundamental modes of teng a) the vertical contact separation mode b) the sliding mode c) the single electron mode d) the freestanding mode 2.1. vertical contact-separation mode the process of energy conversion by triboelectrification was first demonstrated by zhu et. al., in january 2012 [13]. the operation of teng can be explained on the basis of coupling triboelectric nanogenerators (teng): factors affecting its efficiency and applications 159 between electrostatic induction and contact electrification. figure 2(a-b) clearly indicates the process of generation of electricity using contact-separation mode. the materials used for vertical contact-separation mode include pmma (poly methyl methacrylate) and kapton. both open-circuit voltage and short circuit current have been demonstrated in this mode of teng. in the open circuit condition, when no force is applied between these two materials, no electric potential difference is produced as shown in figure 2(a). but when an external force is applied, transfer of charge takes place from one surface to another as soon as these two materials come in contact with each other. because of triboelectric-effect, electrons will be transferred from pmma to the kapton surface thereby making pmma as positive electrode and kapton as negative electrode (refer figure 2(a)). further, when these two materials are separated with the release of force, a potential difference is created between these two electrodes. the opencircuit voltage (voc) so produced can be expressed as: voc = σ d/ ϵₒ (1) where, σ is the triboelectric charge density; ϵₒ is the permittivity and d is the distance between the two surfaces. voc can reach its maximum value when the force is released of the free space. now, when the force is applied again, the potential difference decreases and reaches its minimum value when the two materials come in contact/closer to each other. this depicts the whole cycle of generating electricity in vertical contact-separation mode. under the short circuit condition, the electrons flows from top electrode to the bottom electrode, so as to balance the electric potential difference so generated resulting in the flow of instantaneous current in the process of releasing. thus, the positive charge will accumulate on the top electrode and negative charge will accumulate on the bottom electrode. the charge density during full released process can be expressed as: σ′ = σ d′ ϵrk ϵrp/d1 ϵrp+d′ϵrk ϵrp+d2 ϵrk (2) where, ϵrp = relative permittivity of pmma; ϵrk = relative permittivity of kapton d1 = thickness of the kapton layer; d2 = thickness of the pmma layer now, when the force is applied again, the electrons will move from bottom electrode to the top electrode reducing the induced charge due to which a negative instantaneous current appears. the whole induced charge gets neutralized when these layers come in contact with each other. 2.2. sliding mode siding mode of operation was demonstrated by wang et al in the year 2013 [42] in which two surfaces slide over one another in the lateral direction. the mechanism of generation of electricity has been demonstrated in figure 3 (i-iv). in this case one layer is of ptfe (poly tetra fluoro ethylene) and the other layer consists of nylon plate. in the initial position, when the two plates are placed over one another having full contact with each other, no transfer of electron takes place from nylon to ptfe, thus no potential difference is generated between the two electrodes as shown in figure 3(i). when the positively charged top surface starts sliding in the outward direction, relative displacement in the lateral direction takes place. thus, ptfe electrode will be having a higher potential as compared with the nylon electrode, hence the electrons from the ptfe film will move 160 d. anand, a. singh sambyal, r, vaid towards the nylon film through the external load, until full mismatch, as shown in figure 3(iiiii), the potential difference and charge transfer will reach the maximum value. now, the nylon plate is moved in the inward direction and the whole process will get reserved and the electrons moved from nylon film to ptfe film through external load which produces a negative current when the equilibrium is achieved, no transfer of charge take place and the two plates reaches its original position. several advantages of sliding mode have been observed as compared to vertical contact separation mode such as higher energy conversion efficiency and increased power enhancement. fig. 2 (a-b) process of generation of electricity using contact-separation mode of teng fig. 3 (i-iv) the basic mechanism of generation of electricity triboelectric nanogenerators (teng): factors affecting its efficiency and applications 161 2.3. single electron mode figure 4(a) show the single electron mode operation [45] consisting of pdms layer having micro pyramids over its surface serving the purpose of providing friction and the other contact surface consists of human skin. the layer of pdms is deposited on the ito coated pet substrate and with change in the distance between the two surfaces, transfer of charge take place in between ito and the ground and hence flow of electrons take place. fig. 4 (a) schematic illustration showing the single electron mode teng [45], (b) the electricity generation cycle figure 4(b) indicates the mechanism of generation of electricity in the single electron mode. with the bringing of a finger near the pdms surface, a negative charge appears on its surface as pdms is more negatively charged as compared to human skin and thus more electrons will be transferred from the human skin to the pdms surface. this negative charge can be preserved on the pdms surface due to its insulating nature. now, 162 d. anand, a. singh sambyal, r, vaid when the finger is separated from the pdms surface, a potential difference between the ito and the reference electrode gets generated. this results in the flow of free electrons from the ito electrode to the ground/reference electrode to maintain the equilibrium as shown in figure 4(b). again, when the finger is made to approach the pdms, the movement of free electron takes place from the reference electrode to the ito resulting in the production of negative current/voltage. this is how the cycle gets completed for the single-electron mode operation. 2.4. freestanding triboelectric layer mode the free standing triboelectric layer mode have distinct advantages over the other modes of operations as far as its versatility and applicability in the process of energy harvesting from a moving object or from the motion of human walking without an attached electrode. this mode also has very high energy conversion efficiency and high robustness. in this mode, the generation of electricity depends upon the change in position of the tribo charged surface between two electrodes resulting in change of induced potential difference as depicted in figure 5(a). the main structure consists of two metal films and a free-standing dielectric layer. when the fep (fluorinated ethylene propylene) layer is aligned with the left-electrode of aluminum (al) a negative charge will be developed on the inner surface of the fep layer and a positive charge on the left-electrode surface as shown in figure 5(b). fig. 5 (a) two electrodes resulting in change of induced potential difference in the freestanding triboelectric layer mode when the fep layer slides towards the right-electrode, the potential difference between the left and the right electrodes will be reduced causing the flow of current from left electrode towards the right electrode as shown in figure 5(b). when the fep layer reaches on the top of right electrode, no electric potential difference appears and hence no current flows. finally, when the fep layer slides towards the left electrode, an electric potential difference will appear between the two electrodes, causing flow of current between them, thus completing the whole cycle of generating electricity in free-standing triboelectric layer mode. triboelectric nanogenerators (teng): factors affecting its efficiency and applications 163 fig. 5 (b) working principle of a free-standing triboelectric layer mode 3. energy harvesting sources using teng 3.1. energy harvesting through waste water flow the energy from the waste water flow can be harvested using a rotatory teng as shown in figure 6. it consists of ptfe (poly tetra fluoro ethylene) and nylon being the tribo-electric materials. with the use of triboelectric effect and electrostatic induction, energy can be harvested by contact and sliding modes of the teng operation. the devices so far demonstrated has the ability to light up 50 leds connected in series [46]. when the water is allowed to flow through the tube, the fan connected to the shaft starts rotating. as shown in figure 6, different triboelectric materials are placed on the eight different poles. with the rotation of the shaft, the triboelectric materials come in contact with each other thereby causing the flow of current [46]. energy from the water waves can be harvested as demonstrated by jiang et al., [47] where they designed a spring based teng to store the potential energy present in the water waves. actually, the energy is produced by translating the low frequency wave motion energy of water into high frequency kinetic energy by the use of a spring. in order to achieve higher efficiency, the various parameters like spring rigidity and spring length must be taken into account. water driven teng based on water electrification has been demonstrated and developed by kim et al., [48] which are capable of producing energy even under adverse environmental conditions and rarely affected by humidity and friction. 164 d. anand, a. singh sambyal, r, vaid fig. 6 schematic diagram of a rotatory teng [46] 3.2. energy harvesting from triboelectric textile one of the unique sources of energy harvesting takes place through human motion using tet (triboelectric textile). because of triboelectric effect, the transfer of charge takes place between the skin and the triboelectric textile. in order to obtain a voltage ~ 500 v and a short circuit current of 600 ma, silicon and ni-coated polyester had been used as triboelectric materials as single layer triboelectric textile (stet). on the other hand, for a voltage of ~ 540v and a short circuit current of 140 ma was obtained for a 5x5cm square sized double layer triboelectric textile which is capable of illuminating 100 leds connected in series [49] with stretching, rubbing and pressing using folded tet. on stretching, the layer of materials comes in contact with each other and they retain the original shape by removing the external forces. silk and si-rubber, when comes in contact with each other on stretching results in the generation of electricity due to the transfer of charge between the two layers as depicted in figure 7. this type of tet is capable of producing electricity that can light 54 led bulbs [50]. triboelectric nanogenerators (teng): factors affecting its efficiency and applications 165 fig. 7 working principle of tet 3.3. energy harvesting from human walking the energy harvesting from a foot-fall was analyzed and demonstrated by te-chien hou and others experimentally [51] in the year 2013. the fabrication of shoes soles using triboelectric materials with proper use of spacers has been done by using elastic sponge as a spacer. the variations in the size and thickness of the spacer varied the output so generated. the energy converted from human walking into electricity has generated an electrical output which is capable of illuminating 30 leds connected in series. it has also been observed that an increase in the number of spacer reduces the output voltage because of a decrease in the effective area of contact. 3.4. magnetic force and finger tip pressure driven teng the teng driven by magnetic force and finger tip pressure was designed by taghavi et al [52] as shown in the figure 8. with the application of pressure on the upper part, the upper pair of materials comes in contact with each other, whereas when the pressure is removed the lower part is pushed in upward causing the lower pair of materials to come in contact with each other due to magnetic force. this contact and separation causes the transfer of charge between the materials resulting in the flow of electric-current. 166 d. anand, a. singh sambyal, r, vaid fig. 8 mechanism of contact keys driven by finger tips and then by magnetic-force [52] 3.5. pendulum and comb shaped electrodes based teng another triboelectric nanogenerator that can be fabricated using contact electrification and electrostatic induction is using by a comb-shaped electrode for harvesting energy. more the number of comb electrode arms, the more will be the production of energy. even the rougher surface shows higher output as compared to the flat surface [53]. the working of this teng is basically based on the oscillations of a pendulum. with the application of force to the pendulum, a to and fro motion is generated which produces multiple output for a single input. many setups were created based on the surface roughness and nanowires showing maximum efficiency. the efficiency of teng increases with an increase in the surface roughness because the surface roughness ultimately increases the area of contact [54]. as shown in figure 9, when one material is placed on the top of pendulum and the other material is placed fig. 9 teng consisting of two parts i and ii (i is movable and ii is fixed) triboelectric nanogenerators (teng): factors affecting its efficiency and applications 167 on the frame, with the starting of oscillations, the contact and separation take place between the two materials resulting in charge unbalancing thereby producing the flow of electriccurrent [54]. 4. effect of various factors on the efficiency of teng 4.1. effect of humidity the generation of charge is greatly influenced by humidity as well as temperature. it has been noticed that the generation of charge between various triboelectric materials increased up to 20% with the decrease in the relative humidity whereas increase in the humidity has adverse effect on the efficiency of triboelectric materials and on the triboelectric effect [55]. a triboelectric nanogenerator can also be fabricated which works on a wide range of humidity without causing change in its electrical output. such a teng is consists of triboelectric materials which are water reluctant and hence can be utilized for low and high humidity pendulum conditions [56]. 4.2. effect of temperature temperature also has an impact on the output of triboelectric nanogenerator as observed by various researchers. it has been observed that with an increase in temperature, the ductility of triboelectric material increases while the stiffness decreases whereas on decreasing temperature reverse process is observed. from the graph shown below in figure 10, it is observed that the output voltage decreases beyond a temperature of 300⁰k and the output also varies over a wide range of temperature. u+ denotes average positive peak voltage and u‾ denotes the average negative peak voltage respectively [57]. fig. 10 variations of peak voltage with temperature [57] 4.3. effect of surface structure patterning various triboelectric materials like pdms (polydimethyl siloxane) and pmma (polymethyl methacrylate) can be used for the fabrication of teng with nanopatterns fabricated on their surface using photolithography. different types of patterns like 168 d. anand, a. singh sambyal, r, vaid hexagonal, pillar, and line can be printed and it has been observed that hexagonal patterns show maximum output voltage as compared to the other patterns. triboelectric materials with smaller width pillars show higher output as compared with the large width pillar shaped patterns [58]. seol et al [59] has demonstrated that the effect of pressure on the surface of triboelectric materials result in deformation which has an impact on the output of the teng devices. it has been observed that high pressure applications result in increased output because of the increase in contact surface thereby causing an increase in the maximum charge density. 5. applications of teng 5.1. teng as a micro-scale power source the main and most important purpose for developing teng is to act as a power source for small scale electronic devices and sensors applications. energy harvesting by using its various modes of operation has been demonstrated for body motion [60] vibrations produced by human walking [61], pressing of hand [62-63], insole of shoes [64-65], sound waves present in air [66] and in water [67]. in its sliding mode of operation, approximately a conversion efficiency of 50% has been observed [68] whereas it is about 24% in the case of rotation based teng [69]. it has been demonstrated that the output power reaches to a maximum value of 1200 w/m square which is quite sufficient for powering the small device applications in wearable electronics. energy harvesting has also been demonstrated from flowing river water [70], rain drops [71] by using contactelectrification between solid surface and liquid as applicable in parallel teng [72]. the energy can be harvested using the fluctuations in the water surface [73], water wave, and water stream [74]. energy harvesting can be easily done without constructing huge dams. it has been predicted that in the near future a 1mw of power can be generated from 1km square of surface in ocean if the output of each unit will be 1mw on an average by constructing a 3-d network of teng [75-76]. this will be a big source of blue energy for fulfilling large scale applications/requirements of the world’s energy needs. 5.2. teng as self –powered sensor triboelectric nanogenerators can also be used as self-powered sensors without applying any external power source just by sensing dynamic mechanical action. a large number of sensing applications are available which includes finger touching [77-79], detection of vibration [80], rotation and chemical sensor [81-82]. 6. conclusion in this review paper, a study of triboelectric nanogenerator (teng) has been made on the basis of its fundamental modes of operation, harvesting energy from various sources, along with various factors affecting its efficiency and applications in the real world. its simple mechanism of working, compact size, light weight and innovative design makes this device applicable in small and large power generating fields. the output of theteng depends upon various factors like effective area of contact, amount of force/pressure applied, and morphology of the surface in contact, temperature and humidity. triboelectric nanogenerators triboelectric nanogenerators (teng): factors affecting its efficiency and applications 169 are capable of working over a wide range of temperatures and variable humidity conditions. all the energy which otherwise goes waste in the environment can be utilized by such devices. for achieving sustainable and self-powered systems, teng devices will soon be available in the form of various products in the wearable electronics, mobile and healthcare monitory systems along with many other relevant applications. acknowledgement: the author deepak anand and ashish sambyal organized the concept of this review paper and would like to thank prof. rakesh vaid for supervising the project. all the authors read and approved the final manuscript. references [1] s. p. beeby, m. j. tudor, and n. m. white, "energy harvesting vibration sources for microsystems applications", meas. sci. technol., vol. 17, no. 12, pp. r175– r195, october 2006. [2] j. w. matiko, n. j. grabham, s. p. beeby, and m. j. tudor, "review of the application of energy harvesting in buildings", meas. sci. technol., vol. 25, no. 1, article id 012002, november 2013. [3] e. arroyo and a. badel, "electromagnetic vibration energy harvesting device optimization by synchronous energy extraction", sens. actuators, a, vol. 171, no. 2, pp. 266–273, november 2011. [4] j. chen, d. chen, t. yuan, and x. chen, "a multi-frequency sandwich type electromagnetic vibration energy harvester", appl. phys. lett., vol. 100, no. 21, article id 213509, 2012. [5] j. yang, y. wen, p. li, x. bai, and m. li, "improved piezoelectric multifrequency energy harvesting by magnetic coupling", in proceedings of the 10th ieee sensors conference 2011 (sensors’11), limerick, ireland, 2011, pp. 28–31. [6] j. yang, y. wen, p. li, x. yue, and q. yu, "energy harvesting from ambient vibrations with arbitrary inplane motion directions using a magnetostrictive/piezoelectric laminate composite transducer", j. electron. mater., vol. 43, no. 7, pp. 2559–2565, may 2014. [7] q. yu, j. yang, x. yue, a. yang, j. zhao, n. zhao, y. wen and p. li, "3d, wideband vibro-impacting based piezoelectric energy harvester", aip adv., vol. 5, no. 4, article id 047144, april 2015. [8] p. d. mitcheson, p. miao, b. h. stark, e. m. yeatman, a. s. holmes, and t. c. green, "mems electrostatic micropower generator for low frequency operation", sens. actuators, a, vol. 115, no. 2-3, pp. 523–529, september 2004. [9] l. g. w. tvedt, d. s. nguyen, and e. halvorsen, "nonlinear behavior of an electrostatic energy harvester under wide-and narrowband exitation", j. microelectromech. syst., vol. 19, no. 2, pp. 305–316, may 2010. [10] j. yang, y. wen, p. li, x. yue, q. yu, and x. bai, "a twodimensional broadband vibration energy harvester using magnetoelectric transducer", appl. phys. lett., vol. 103, no. 24, article id 243903, december 2013. [11] j. yang, q. yu, j. zhao, n. zhao, y. wen, p. li and j. qiu, "design and optimization of a bi-axial vibration-driven electromagnetic generator", j. appl. phys., vol. 116, no. 11, article id 114506, september 2014. [12] k. y. lee, j. chun, j.-h. lee, k. n. kim, n.-r. kang, j.-y. kim, m. h. kim, k-s. shin, m. k. gupta, j. m. baik, s.-w. kim, "hydrophobic sponge structure-based triboelectric nanogenerator", adv. mater., vol. 26, no. 29, pp. 5037–5042, may 2014. [13] g. zhu, c. pan, w. guo, c.-y. chen, y. zhuo, r. yu and z. l. wang, "triboelectric-generator-driven pulse electrodeposition for micropatterning", nano lett., vol. 12, no. 9, pp. 4960–4965, august 2012. [14] g. zhu, z.-h. lin, q. jing, p. bai, c. pan, y. yang, y. zhou and z. l. wang, "toward large-scale energy harvesting by a nanoparticle-enhanced triboelectric nanogenerator", nano lett., vol. 13, no. 2, pp. 847–853, january 2013. [15] j. yang, j. chen, y. yang, h. zhang, w. yang, p. bai, y. su and z. l. wang, "broadband vibrational energy harvesting based on a triboelectric nanogenerator", adv. energy mater., vol. 4, no. 6, article id 1301322, november 2013. [16] s. kim, m. k. gupta, k. y. lee, a. sohn, t. y. kim, k.-s. shin, d. kim, s. k. kim, k. h. lee, h.-j. shin, d.-w. kim and s.-w. kim, "transparent flexible graphene triboelectric nanogenerators", adv. mater., vol. 26, no. 23, pp. 3918–3925, 2014. 170 d. anand, a. singh sambyal, r, vaid [17] w. yang, j. chen, g. zhu, x. wen, p. bai, y. su, y. lin and z. wang, "harvesting vibration energy by a triple-cantilever based triboelectric nanogenerator", nano res., vol. 6, no. 12, pp. 880–886, september 2013. [18] h. zhang, y. yang, y. su, j. chen, k. adams, s. lee, c. hu and z. l. wang, "triboelectric nanogenerator for harvesting vibration energy in full space and as self-powered acceleration sensor", adv. funct. mater., vol. 24, no. 10, pp. 1401–1407, october 2014. [19] b. k. yun, j. w. kim, h. s. kim et al., "base-treated polydimethylsiloxane surfaces as enhanced triboelectric nanogenerators", nano energy, vol. 15, pp. 523–529, july 2015. [20] y. su, j. chen, z. wu, and y. jiang, "low temperature dependence of triboelectric effect for energy harvesting and selfpowered active sensing", appl. phys. lett., vol. 106, no. 1, article id 013114, january 2015. [21] y. yang, h. zhang, z.-h. lin et al., "human skin based triboelectric nanogenerators for harvesting biomechanical energy and as self-powered active tactile sensor system", acs nano, vol. 7, no. 10, pp. 9213–9222, september 2013. [22] w. seung, m. k. gupta, k. y. lee et al., "nanopatterned textile-based wearable triboelectric nanogenerator,” acs nano, vol. 9, no. 4, pp. 3501–3509, february 2015. [23] p. bai, g. zhu, y. liu et al., "cylindrical rotating triboelectric nanogenerator", acs nano, vol. 7, no. 7, pp. 6361–6366, june 2013. [24] g. zhu, j. chen, t. zhang, q. jing, and z. l. wang, "radialarrayed rotary electrification for high performance triboelectric generator", nat. commun., vol. 5, article 3426, march 2014. [25] y. yang, g. zhu, h. zhang et al., "triboelectric nanogenerator for harvesting wind energy and as selfpowered wind vector sensor system", acs nano, vol. 7, no. 10, pp. 9461–9468, september 2013. [26] z. wen, j. chen, m.-h. yeh et al., "blow-driven triboelectric nanogenerator as an active alcohol breath analyzer", nano energy, vol. 16, pp. 38–46, september 2015. [27] z.-h. lin, g. cheng, w. wu, k. c. pradel, and z. l. wang, "dual-mode triboelectric nanogenerator for harvesting water energy and as a self-powered ethanol nanosensor", acs nano, vol. 8, no. 6, pp. 6440– 6448, may 2014. [28] s. jung, j. lee, t. hyeon, m. lee, and d.-h. kim, "fabricbased integrated energy devices for wearable activity monitors", adv. mater., vol. 26, no. 36, pp. 6329–6334, july 2014. [29] h. zhang, y. yang, y. su et al., "triboelectric nanogenerator as self-powered active sensors for detecting liquid/gaseous water/ ethanol", nano energy, vol. 2, no. 5, pp. 693–701, september 2013. [30] y. su, g. zhu, w. yang et al., "triboelectric sensor for selfpowered tracking of object motion inside tubing", acs nano, vol. 8, no. 4, pp. 3843–3850, march 2014. [31] f. yi, l. lin, s. niu et al., "stretchable-rubber-based triboelectric nanogenerator and its application as selfpowered body motion sensors", adv. funct. mater., vol. 25, no. 24, pp. 3688–3696, june 2015. [32] f. yi, l. lin, s. niu et al., “stretchable-rubber-based triboelectric nanogenerator and its application as self-powered body motion sensors,” adv. funct. mater., vol. 25, no. 24, pp. 3688–3696, june 2015. [33] y. wu, q. jing, j. chen et al., "a self-powered angle measurement sensor based on triboelectric nanogenerator", adv. funct. mater., vol. 25, no. 14, pp. 2166–2174, april 2015. [34] p. bai, g. zhu, q. jing et al., "transparent and flexible barcode based on sliding electrification for selfpowered identification systems", nano energy, vol. 12, pp. 278–286, march 2015. [35] z. l. wang, j. chen, and l. lin, "progress in triboelectric nanogenerators as a new energy technology and self-powered sensors", energy environ. sci., vol. 8, no. 8, pp. 2250– 2282, august 2015. [36] g. zhu, b. peng, j. chen, q. jing, and z. l. wang, "triboelectric nanogenerators as a new energy technology: from fundamentals, devices, to applications", nano energy, vol. 14, pp. 126–138, may 2015. [37] s. park, h. kim, m. vosgueritchian et al., "stretchable energyharvesting tactile electronic skin capable of differentiating multiple mechanical stimuli modes", adv. mater., vol. 26, no. 43, pp. 7324–7332, november 2014. [38] f.-r. fan, l. lin, g. zhu, w. wu, r. zhang, and z. l. wang, "transparent triboelectric nanogenerators and self-powered pressure sensors based on micropatterned plastic films", nano lett., vol. 12, no. 6, pp. 3109–3114, may 2012. [39] j. yang, j. chen, y. su et al., "eardrum-inspired active sensors for self-powered cardiovascular system characterization and throat-attached anti-interference voice recognition", adv. mater., vol. 27, no. 8, pp. 1316–1326, february 2015. [40] s. lee, w. ko, y. oh et al., "triboelectric energy harvester based on wearable textile platforms employing various surface morphologies", nano energy, vol. 12, pp. 410–418, march 2015. [41] g. zhu, j. chen, y. liu et al., "linear-grating triboelectric generator based on sliding electrification", nano lett., vol. 13, no. 5, pp. 2282–2289, april 2013. triboelectric nanogenerators (teng): factors affecting its efficiency and applications 171 [42] s. wang, l. lin, y. xie, q. jing, s. niu, and z. l. wang, "sliding-triboelectric nanogenerators based on in-plane chargeseparation mechanism", nano lett., vol. 13, no. 5, pp. 2226– 2233, april 2013. [43] s. niu, y. liu, s. wang et al., "theoretical investigation and structural optimization of single-electrode triboelectric nanogenerators", adv. funct. mater., vol. 24, no. 22, pp. 3332–3340, june 2014. [44] y. li, g. cheng, z.-h. lin, j. yang, l. lin, and z. l. wang, "single-electrode-based rotationary triboelectric nanogenerator and its applications as self-powered contact area and eccentric angle sensors", nano energy, vol. 11, pp. 323–332, january 2015. [45] b. meng, w. tang, z.-h. too et al., "a transparent single-friction-surface triboelectric generator and self-powered touch sensor", energy environ. sci., vol. 6, no. 11, pp. 3235–3240, august 2013. [46] c. r. s. rodrigues, c. a. s. alves, j. puga, a. m. pereira and j. o. ventura, "triboelectric driven turbine to generate electricity from the motion of water", nano energy, vol. 30, pp. 379-386, december 2016. [47] t. jiang, y. yao, l. xu, l. zhang, t. xiao and z. l. wang, "spring assisted triboelectric nanogenerator for efficiently harvesting water wave energy", nano energy, vol. 31, pp. 560-567, january 2016. [48] t. kim, j. chung, d. y. kim, j. h. moon, s. lee, m. cho, s. h. lee and s. lee, "design optimization of rotating triboelectric nanogenerator by water electrification and inertia", nano energy, vol. 27, pp. 340351, september 2016. [49] z. tian, j. he, x. chen, z. zhang, t. wen, c. zhai, j. han, j. mu, x. hou, x. chou and c.y. xue, "performance-boosted triboelectric textile for harvesting human motion energy", nano energy, vol. 39, pp. 562-570, september 2017. [50] a. y. choi, c. j. lee, j. park, d. kim and y. t kim, "corrugated textile based triboelectric generator for wearable energy harvesting", sci. rep., vol. 7, article id 45583, march 2017. [51] te-chien hou, y. yang, h. zhang, j. chen, l.j. chen and z.l. wang, "triboelectric nanogenerator built inside shoe insole for harvesting walking energy", nano energy, vol. 2, no. 5, pp. 856–862, september 2013. [52] m. taghavi and l. beccai, "a contact-key triboelectric nanogenerator: theoretical and experimental study on motion speed influence", nano energy, vol 18, pp. 283-292, november 2015. [53] d. yoo, d. choi, and d. s. kim, "comb-shaped electrode-based teng’s for bidirectional mechanical energy harvesting", microelectron. eng., vol. 174, pp. 46-51, april 2017, [54] s. lee, y. lee, d. kim, y. yang, l. lin, z. h. lin, w. hwang and z. l. wang, "triboelectric nanogenerator for harvesting pendulum oscillation energy", nano energy, vol. 2, no. 6, pp. 1113-1120, november 2013. [55] v. nguyen and rusen yang, "effect of humidity and pressure on triboelectric nanogenerator", nano energy, vol. 2, no. 5, pp. 604-608, september 2013. [56] j. shen, z. li, j. yu, and b. ding, "humidity-resisting triboelectric nanogenerator for high performance biomechanical energy harvesting", nano energy, vol. 40, pp. 282-288, october 2017. [57] x. wen, y. su, y. yang, h. zhang and z. l. wang, "applicability of triboelectric nanogenerator over a wide range of temperature", nano energy, vol. 4, pp. 150-156, march 2014. [58] m. a. p. mahmud, j. lee, g. kim, h. lim and k. b. choi, "improving the surface charge density of a contact-separation-based triboelectric nanogenerator by modifying the surface morphology", microelectron. eng., vol. 159, pp. 102-107, june 2016. [59] m. l. seol, s.h lee, j.w. han, d. kim, g.h cho and y.k choi, "impact of contact pressure on output voltage of triboelectric nanogenerator based on deformation of interfacial structures" nano energy, vol. 17, pp. 63-71, october 2015. [60] w. q. yang, j. chen, x. n. wen, q. s. jing, j. yang, y. j. su, g. zhu, w. z. wu and z. l. wang, "triboelectrification based motion sensor for human-machine interfacing", acs appl. mater. interfaces, vol. 6, pp. 7479-7484, april 2014. [61] w. q. yang, j. chen, g. zhu, j. yang, p. bai, y. j. su, q. s. jing, x. cao and z. l. wang, "harvesting energy from the natural vibration of human walking", acs nano, vol. 7, pp. 11317-11324, november 2013. [62] x. s. zhang, m. d. han, r. x. wang, f. y. zhu, z. h. li, w. wang and h. x. zhang, "frequencymultiplication high-output triboelectric nanogenerator for sustainably powering biomedical microsystems", nano lett., vol. 13, no. 3, pp.1168-1172, february 2013. [63] s. kim, m. k. gupta, k. y. lee, a. sohn, t. y. kim, k. s shin, d. kim, s. k. kim, k. h. lee, h. j. shin, d. w. kim and s. w. kim, "transparent flexible graphene triboelectric nanogenerators", adv. mater., vol. 26, no. 23, pp. 3918-3925, march 2014. [64] g. zhu, p. bai, j. chen and z. l. wang, "power-generating shoe insole based on triboelectric nanogenerators for self-powered consumer electronics", nano energy, vol. 2, no. 5, pp. 688-692, september 2013. 172 d. anand, a. singh sambyal, r, vaid [65] b. meng, w. tang, x. s. zhang, m. d. han, w. liu and h. x. zhang, "self-powered flexible printed circuit board with integrated triboelectric generator", nano energy, vol. 2, no. 6, pp. 1101-1106, november 2013. [66] j. yang, j. chen, y. liu, w. q. yang, y. j. su and z. l. wang, "triboelectrification-based organic film nanogenerator for acoustic energy harvesting and self-powered active acoustic sensing", acs nano, vol. 8, no. 3, pp. 2649-2657, february 2014. [67] a. f. yu, m. song, y. zhang, y. zhang, l. b. chen, j. y. zhai and z. l. wang, "self-powered acoustic source locator in underwater environment based on organic film triboelectric nanogenerator", nano res., vol. 8, pp. 765-773, september 2014. [68] g. zhu, y. s. zhou, p. bai, x. s. meng, q. s. jing, j. chen and z. l. wang, "a shape-adaptive thin-filmbased approach for 50% high-efficiency energy generation through micro-grating sliding electrification", adv. mater., vol. 26, no. 23, pp. 3788-3796, april 2014. [69] g. zhu, j. chen, t. j. zhang, q. s. jing and z. l. wang, "radial-arrayed rotary electrification for high performance triboelectric generator", nat. commun., vol. 5, article 3426, march 2014. [70] z. h. lin, g. cheng, s. lee, k.c. pradel and z. l. wang, "harvesting water drop energy by a sequential contact-electrification and electrostatic-induction process", adv. mater., vol. 26, pp. 46904696, july 2014. [71] z. h. lin, g. cheng, w. z. wu, k. c. pradel and z. l. wang, "dual-mode triboelectric nanogenerator for harvesting water energy and as a self-powered ethanol nanosensor", acs nano, vol. 8, no. 6 pp. 6440-6448, may 2014. [72] z. h. lin, g. cheng, l. lin, s. lee and z. l. wang, "water–solid surface contact electrification and its use for harvesting liquid-wave energy", angew. chem., int. ed., vol. 52, no. 48, pp. 12545-12549, november 2013. [73] g. zhu, y. j. su, p. bai, j. chen, q. s. jing, w. q. yang and z. l. wang, "harvesting water wave energy by asymmetric screening of electrostatic charges on a nanostructured hydrophobic thin-film surface", acs nano, vol. 8, no. 6, pp. 6031–6037, april 2014. [74] x. n. wen, w. q. yang, q. s. jing and z. l. wang, "harvesting broadband kinetic impact energy from mechanical triggering/vibration and water waves", acs nano, vol. 8, no. 7, pp. 7405-7412, june 2014. [75] y. f. hu, j. yang, q. s. jing, s. m. niu, w. z. wu and z. l. wang, "triboelectric nanogenerator built on suspended 3d spiral structure as vibration and positioning sensor and wave energy harvester", acs nano, vol. 7, no. 11, pp. 10424-10432, october 2013. [76] y. yang, h. l. zhang, r. y. liu, x. n. wen, t. c. hou and z. l. wang, "fully enclosed triboelectric nanogenerators for applications in water and harsh environments", adv. energy mater., vol. 3, no. 12, pp. 1563-1568, december 2013. [77] y. yang, h. l. zhang, x. d. zhong, f. yi, r. m. yu, y. zhang and z. l. wang, "electret film-enhanced triboelectric nanogenerator matrix for self-powered instantaneous tactile imaging", acs appl. mater. interfaces, vol. 6, no. 5, pp. 3680-3688, february 2014. [78] y. yang, h. l. zhang, z. h. lin, y. s. zhou, q. s. jing, y. j. su, j. yang, j. chen, c. g. hu and z. l. wang, "human skin based triboelectric nanogenerators for harvesting biomechanical energy and as self-powered active tactile sensor system", acs nano, vol. 7, no. 10, pp. 9213-9222, september 2013. [79] b. meng, w. tang, z. h. too, x. s. zhang, m. d. han, w. liu and h. x. zhang, "a transparent single-frictionsurface triboelectric generator and self-powered touch sensor", energy environ. sci., vol. 6, no. 11 pp. 32353240, august 2013. [80] j. yang, y. yang, j. chen, h. l. zhang, w. q. yang, p. bai, y. j. su and z. l. wang, "broadband vibrational energy harvesting based on a triboelectric nanogenerator", adv. energy mater., vol. 4, no. 6, article id 1301322, april 2014. [81] q. s. jing, g. zhu, w. z. wu, p. bai, y. n. xie, r. p. s. han and z. l. wang, "self-powered triboelectric velocity sensor for dual-mode sensing of rectified linear and rotary motions", nano energy, vol. 10, pp. 305– 312, november 2014. [82] z. h. lin, g. zhu, y. s. zhou, y. yang, p. bai, j. chen and z. l. wang, "a self-powered triboelectric nanosensor for mercury ion detection", angew. chem., int. ed., vol. 52, no. 19, pp. 50655069, may 2013. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 31, no 2, june 2018, pp. 267 277 https://doi.org/10.2298/fuee1802267b improving network lifetime by minimizing energy hole problem in wsn for the application of iot  trupti m. behera, sushanta k. mohapatra school of electronics engineering, kiit university, bhubaneswar, odisha, india abstract. the world today is at the internet of things (iot) inflection point with more number of products adding to its intelligence system through a wide range of connectivity. wireless sensor networks (wsn) have been very useful in iot application for gathering and processing of data to the end user. however, limited battery power and network lifetime are few of the major challenges in the designing process of any sensor network. one of those is the energy hole problem (ehp) that arises when the nodes nearer to the sink or base station die out early due to excess load as compared to other nodes that are far away. this breaks the connection of the network from the sink which results in shortening the lifetime of the network. in this paper, a trade-off is maintained between network lifetime and power requirement by implementing a sleep-awake mechanism.with the help of matlab simulations, it is found that after applying the mechanism, the network lifetime was extended to almost 300 and 700 rounds for teen and leach protocol respectively. the results will be beneficial for the design process in wsn for iot application. key words: iot, wsn, energy hole problem, power consumption, network lifetime. 1. introduction the internet of things (iot) is an integration of the existing and evolving internet with future network developments, such as self-configuring capabilities and enhanced network lifetime with proper power management. the iot cloud creates an intelligent network that can be sensed, controlled and programmed [1]. the basic elements of the future internet designed as iot include three major components which enable seamless communication [2]. the first is the hardware which is made up of sensors, actuators and embedded communication hardware like radio frequency identification (rfid), wireless sensor network (wsn), etc. the second is a middleware which performs on-demand storage and computing tools for data analytics. and the last is a presentation of novel and easy to understand visualization and interpretation tools which can be widely accessed on different platforms and which can be designed for different applications [2]. received may 25, 2017; received in revised form october 23, 2017 corresponding author: trupti m. behera school of electronics engineering, kiit university, bhubaneswar, odisha, india (e-mail: truptifet@kiit.ac.in) 268 t. m. behera, s. k. mohapatra the emerging iot has a diversified application scenario equipped with a wide range of heterogeneous devices. as shown in fig 1, wsn acts as a gateway to the iot. wsn also has a wide range of applications in various working domains and is also well suited for long-term data acquisition, hence wsn will be the best sensor interfacing device in the iot environment [3][4]. fig. 1 wsn as a gateway for iot one of the major design criteria of wsn is communication of data in an iot environment while trying to prolong the network lifetime. the design procedure should also prevent any connectivity degradation by employing efficient power management techniques. further, the placement of the sink or the base station also plays a vital role in the process of power consumption as it is responsible to collect all the sensed data from the sensor nodes and process the information to the end user. the sink node is equipped with one or more receiving antenna and unlimited energy to carry out the communication process effectively. in a wsn, all the nodes are randomly deployed, but nodes nearer to the sink area consume more energy than those away from the sink (as they have a greater load). hence these nodes die quickly creating a vacuum of energy called energy hole problem (ehp)[5] around the sink. under this scenario, the data transmission to the sink will be lost completely leading to an end of network lifetime[6]. as a result, optimizing the power consumption with enhancing the network lifetime becomes one of the most challenging tasks for researchers. 2. related work till date, a number of schemes have already been proposed to achieve the desired performance in terms of better power efficiency, network lifetime, throughput, etc. in [7], we have discussed a heterogeneous wsn where some of the nodes (called advanced nodes) are assigned more energy as compared to other nodes. with the simulation result we have shown that when all the normal nodes are dead, the network still continues transmission as the advances nodes are alive to transmit data from the sink, thus enhancing the network lifetime. an analytical modeling is proposed in [8] in order to reduce the ehp by analyzing the effectiveness of several existing approaches including traffic compression, deployment assistance, and aggregation. improving network lifetime by minimizing energy hole problem in wsn... 269 in [9], the authors have prepared a model based on a calculation of voronoi polygon of each node to detect any energy hole in the network. based on this, the node then moves to a better position to provide maximum coverage. they have also discussed optimizing the network lifetime and data collection simultaneously by adopting a rate allocation algorithm for data aggregation. a non-uniform node distribution strategy is proposed in [10], where the authors propose that if the number of nodes increases with geometric proportion from the outer parts of the network to the inner ones, then the energy wastage can be reduced to almost 10%. in [11], the author proposed that instead of a single sink in a particular field, multiple sinks can be deployed. each sink will be surrounded by normal nodes, thus dividing the network load to avoid the energy hole. this decision depends on the amount of data load in the network. a data gathering scheme is proposed in [12], where the network employs an optimum and fixed cluster radius intending to improve the network lifetime by avoiding the energy hole problem. in [13], a new scheme wemer is proposed that divides the whole network in too many small equiangular wedges that help in reducing energy hole formation. the authors in [14], proposed a non-uniform node distribution strategy to achieve nearly balanced energy depletion in the network with a distributed shortest path routing algorithm in order to reduce the energy hole problem. a sensor network designed for iot application need to perform various operations, such as sensing of data, aggregating and transferring the data to the end-user. to perform such operations with limited power becomes one of the major challenges in the design process. hence, we need to maximize the network lifetime by conserving energy during the transmission phase. this is made possible if only a small percentage of nodes are allowed to transmit the data to base station and the rest of the node becomes inactive and go to sleep condition. 3. sleep-awake mechanism from the above literature, it is clear that due to ehp, the network dies earlier [15] than its expected lifetime. the main reason behind ehp is that a large amount of data is given to the sink by nearby nodes as compared the nodes far away. in [16], the authors stated that due to the ehp, the network lifetime gets over even when 90% of the energy is left unused. thus, avoiding ehp becomes an important research area nowadays. we use the first-order radio model for energy consumption as used in [16] and shown in fig. 2, where nodes are randomly deployed with equal energy level. the sink is centrally positioned with unlimited energy. for each round, the sink has to search for the node with maximum distance in the region. it will then formulate the energy required to transmit the data to the sink. let this energy be reference energy (eref). only when the energy level of a particular node becomes greater than or equal to eref, does it have the permission to transmit any data to the sink or else it is not allowed to transmit. when the energy level of any node [15] becomes less than eref, it goes to sleep mode to save energy. this process continues for each round until the percentage of sleep nodes exceeds 1/10 th of the total nodes in the region. when the number of sleep nodes exceeds 10%, then the node which first went to 270 t. m. behera, s. k. mohapatra sleep mode moves to the awake mode. in consecutive rounds, when percentage again exceeds 10%, the nodes which went to sleep in the second position moves to the awake mode, and the mechanism continues. in such scenario, some 1/10 th of the total node will always remain in sleep position to save energy for extending network lifetime. to calculate the reference energy, we use the following formula as in [15], 4 )(( * ) ( * * )ref tx da ampe e e d e d d   (1) where eref is reference energy d is the length of the data packet d is the distance between maximum distance node and sink etx is energy required for data transmission eda is energy required for data aggregation eamp is energy required by power amplifier. the next step will be cluster head selection by nodes based on predefined probability [6]. only after the cluster heads broadcast their status, the nodes will be able to get associated with the cluster heads, thus consuming minimal energy while transmitting data. after formulation of clusters, each cluster head creates a time division multiple access (tdma) schedule for the nodes within the cluster. the tdma slots are assigned by the sink to each node. nodes can transmit their data to cluster head only during their respective time slots. once the cluster head collects all the data, it performs data aggregation and transmits the data to the base station. the energy consumption to transmit data from a node n to the cluster head ch for the condition d< d0 (reference distance) can be given as 2( ) ( )( )ch ch ch n n ele n fse d e d e d  (2) where 0 4 t rh h d    ht and hr are the height of transmitting and receiving antenna respectively. fig. 2 first-order radio model improving network lifetime by minimizing energy hole problem in wsn... 271 now considering the scenario where the distance between n to ch is d > d0 , the energy can be given as in [15] 4( ) ( )( )ch ch ch n n ele n ampe d e d e d  (3) energy consumed by ch to transmit data to the s when distance between them is d< d0 is given as in [15] 2( ) ( )( )s s s ch ch ele da ch fse d e e d e d   (4) when the distance between ch and s(sink) is d> d0 , the energy consumption can be written as in [15] 4( ) ( )( )s s s ch ch ele da ch ampe d e e d e d   (5) the total energy consumed in transmitting data from a particular node to sink will be the sum of both the energies in equation (2), (3) and (4), (5), i.e. totalch ch ne e e  (6) the average of total energy can be found by _ totalch average ch e e n  (7) energy saving due to sleeping of normal nodes in each round _save n ele tx ampe e e e   (8) where eele is radio energy dissipation energy saving for ch is _save ch ele da tx rx ampe e e e e e     (9) energy saving for all sleep nodes can be written as _ 0 n save total i i e e   (10) where n is the total number of nodes that are in sleep mode, then the average energy saving can be written as _ _ save total save avg e e n  (11) 4. simulations and result we have considered a sensor network where 100 nodes are deployed randomly. the sink is located at the center with unlimited energy. the normal sensor nodes have limited energy. for each round, some of the sensor nodes transmit data, while others are set to sleep mode to save energy. we implement this mechanism in some of the cluster-based protocols such as leach [17] [18], deec [19] and teen [20]. leach is a homogenous protocol, whereas deec and teen are heterogeneous protocols. however, the work can 272 t. m. behera, s. k. mohapatra also be extended to other hierarchical routing protocols such as pegasis, eammh, and sep. to generate matlab simulation, we consider these parameters as listed below. table 1 parameters for simulation symbol description value xm distance at x-axes 100 meters ym distance at y-axes 100 meters n total number of nodes 100 nodes e0 total energy of network 0.5j p probability of cluster head 0.1 erx energy dissipation: receiving 0.0013/pj/bit/m 4 efs energy dissipation: free space model 10/pj/bit/m 2 eamp energy dissipation: power amplifier 100/pj/bit/m 2 eele energy dissipation: electronics 50/nj/bit etx energy dissipation: transmission 50/nj/bit eda energy dissipation: aggregation 5/nj/bit d0 reference distance 87 meters n number of sleep nodes 10 nodes 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 fig. 3 deployment of 100 sensor nodes randomly leach is a homogenous protocol where all the sensor nodes are initially assigned the same energy level. according to our concept, the nodes that have the energy level less than the threshold are in the sleep mode. following this method, we will be able to save the total energy of the network. figure 4 shows the comparison of the above technique ileach (sleep-awake mechanism) with leach regarding the number of alive nodes, the number of dead nodes, the number of chs per round and number of packets sends to bs. the above figure shows that in leach the last node alive around 1500 rounds and in ileach the last node is alive till 2200 rounds. this result shows that in the ileach utilization of energy is properly distributed among all the nodes in the networks, which results in increasing network lifetime. improving network lifetime by minimizing energy hole problem in wsn... 273 (a) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 60 70 80 90 100 no. of rounds (r) n o. o f n od es a lli ve leach ileach (b) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 no. of rounds (r) n o . o f c h s p e r ro u n d s cluster heads per round leach ileach 0 500 1000 1500 2000 2500 3000 3500 0 0.5 1 1.5 2 x 10 4 no. of rounds (r) n o . o f p k ts t o b s packets sent to the base station leach ileach fig. 4 comparing the performance of leach and ileach: (a) number of alive nodes during rounds, (b) number of data packets per rounds hence, ileach has a prolonged stability period, and also the instability region starts much later as compared to leach. in leach, a random number of chs is selected in every round, but ileach had some patterns and controlled chs selection. in ileach efficient chs selection algorithm helps it in better and constant data rate transmission to bs. with sleep-awake policy, ileach successfully delivers data to the base station in a much better way than leach as the number of data packets sends much higher than leach to achieve higher data rate with longer network lifetime. 274 t. m. behera, s. k. mohapatra (a) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 60 70 80 90 100 no. of rounds (r) n o. o f n od es a lli ve iteen teen (b) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 no. of rounds (r) n o . o f c h s p e r ro u n d s cluster heads per round 0 500 1000 1500 2000 2500 3000 3500 0 0.5 1 1.5 2 x 10 4 no. of rounds (r) n o . o f p k ts t o b s packets sent to the base station fig. 5 comparing the performance of teen and iteen: (a) number of alive nodes during rounds, (b) number of data packets per rounds(red-iteen and blue-teen) improving network lifetime by minimizing energy hole problem in wsn... 275 (a) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 60 70 80 90 100 no. of rounds (r) n o . o f n o d e s a lli v e ideec deec (b) 0 500 1000 1500 2000 2500 3000 3500 0 20 40 60 80 no. of rounds (r) n o . o f c h s p e r ro u n d s cluster heads per round deec ideec 0 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 x 10 4 no. of rounds (r) n o . o f p k ts t o b s packets sent to the base station deec ideec fig. 6 comparing the performance of deec and ideec: (a) number of alive nodes during rounds, (b) number of data packets per rounds figure 5 and 6 show the comparison of two existing heterogeneous protocols, i.e., teen and deec with the sleep-awake mechanism iteen and ideec respectively. the simulation result clearly shows that iteen and ideec outperform regarding the number of alive nodes, the number of chs per round and number of packets sent to bs. for teen protocol, the nodes start to die out after 1600 rounds, wherein iteen goes till around 1900 rounds. in a similar manner, the data packets sent to the base station also increase for both protocols. 276 t. m. behera, s. k. mohapatra rasheedl et al. in [6] did a similar experiment called ehorm to compare the number of alive nodes for protocols, such as leach, deec, teen, and sep. our approach, however, gives better results with more valid comparisons by taking different parameters into consideration. for leach protocol, the number of alive nodes extend to 2750 rounds as compared to almost only 1700 rounds using ehorm technique in [6]. similarly, for teen and deec protocol it extends beyond 3500 rounds, wherein ehorm the nodes becomes dead by 3200 and 3000 rounds respectively. hence, we can say that the network lifetime is enhanced after the implementation of our proposed mechanism for both heterogeneous and homogenous protocols. 5. conclusion in this article, we discussed an important issue in wireless sensor network for the application in iot which is energy hole problem. ehp is created since the nodes near the sink consume more energy, and as a result, die quickly, which in turn shortens the network lifetime. ehp in both heterogeneous and homogeneous routing protocols is studied. the sleep–awake mechanism was implemented in leach, deec and teen protocols to study the behavior of the network under the different scenarios in order to remove any energy hole problem within the network. from the simulation result, it was found that less energy is consumed and nodes live longer in ileach, iteen and ideec, as compared to leach, teen, and deec respectively. this clearly indicates that the sensor network lifetime will be enhanced or increased after implementation of the sleep-awake mechanism. simulation result also shows a better stability period and increased data packets sent to the sink in the network. this technique of enhancing the network lifetime while also optimizing energy consumption can be implemented in iot to achieve better performance. to extend the work in future direction, performance analysis of iot based applications can be done for other routing protocols such as pegasis, eammh, sep, etc. references [1] j. chase, “the evolution of the internet of things,” texas instruments, 2013. [2] j. gubbi, r. buyya, s. marusic, and m. palaniswami, “internet of things (iot): a vision, architectural elements, and future directions,” futur. gener. comput. syst., vol. 29, no. 7, pp. 1645–1660, 2013. [3] p. bellavista, g. cardone, a. corradi, and l. foschini, “convergence of manet and wsn in iot urban scenarios,” ieee sens. j., vol. 13, no. 10, pp. 3558–3567, 2013. [4] m. t. lazarescu, “design of a wsn platform for long-term environmental monitoring for iot applications,” ieee j. emerg. sel. top. circuits syst., vol. 3, no. 1, pp. 45–54, 2013. [5] j. jia, x. wu, j. chen, and x. wang, “exploiting sensor redistribution for eliminating the energy hole problem in mobile sensor networks,” eurasip j. wirel. commun. netw., vol. 2012, no. 1, p. 68, 2012. [6] m. b. rasheedl, n. javaid, a. javaid, m. a. khan, s. h. bouk, and z. a. khan, “improving network efficiency by removing energy holes in wsns,” arxiv prepr. arxiv1303.5365, 2013. [7] t. m. behera and s. s. singh, “a novel energy efficient network management scheme of heterogeneous wsn with mimo techniques,” int. j. comput. appl., vol. 93, no. 7, 2014. [8] j. li and p. mohapatra, “analytical modeling and mitigation techniques for the energy hole problem in sensor networks,” pervasive mob. comput., vol. 3, no. 3, pp. 233–254, 2007. [9] x. tang and j. xu, “optimizing lifetime for continuous data aggregation with precision guarantees in wireless sensor networks,” ieee/acm trans. netw., vol. 16, no. 4, pp. 904–917, 2008. improving network lifetime by minimizing energy hole problem in wsn... 277 [10] x. wu, g. chen, and s. k. das, “on the energy hole problem of nonuniform node distribution in wireless sensor networks,” in proceedings of the ieee international conference on mobile adhoc and sensor systems (mass), 2006, pp. 180–187. [11] m. ahadi and a. m. bidgoli, “a multiple-sink model for decreasing the energy hole problem in largescale wireless sensor networks,” int. j. comput. theory eng., vol. 4, no. 5, p. 843, 2012. [12] a.-f. liu, x.-y. wu, z.-g. chen, and w.-h. gui, “research on the energy hole problem based on unequal cluster-radius for wireless sensor networks,” comput. commun., vol. 33, no. 3, pp. 302–321, 2010. [13] n. sharmin, m. s. alam, and s. s. moni, “wemer: an energy hole mitigation scheme in wireless sensor networks,” in proceedings of the 2016 ieee international wie conference on electrical and computer engineering (wiecon-ece), 2016, pp. 229–232. [14] x. wu, g. chen, and s. k. das, “avoiding energy holes in wireless sensor networks with nonuniform node distribution,” ieee trans. parallel distrib. syst., vol. 19, no. 5, pp. 710–720, 2008. [15] m. b. rasheed, n. javaid, z. a. khan, u. qasim, and m. ishfaq, “e-horm: an energy-efficient hole removing mechanism in wireless sensor networks,” in proceedings of the 26th annual ieee canadian conference on electrical and computer engineering (ccece), 2013, pp. 1–4. [16] j. li and p. mohapatra, “an analytical model for the energy hole problem in many-to-one sensor networks,” in proceedings of the ieee vehicular technology conference, 2005, vol. 62, no. 4, p. 2721. [17] s. k. singh, p. kumar, and j. p. singh, “a survey on successors of leach protocol,” ieee access, vol. 5, pp. 4298–4328, 2017. [18] l. yadav and c. sunitha, “low energy adaptive clustering hierarchy in wireless sensor network (leach),” int. j. comput. sci. inf. technol., vol. 5, no. 3, pp. 4661–4664, 2014. [19] l. qing, q. zhu, and m. wang, “design of a distributed energy-efficient clustering algorithm for heterogeneous wireless sensor networks,” comput. commun., vol. 29, no. 12, pp. 2230–2237, 2006. [20] a. manjeshwar and d. p. agrawal, “teen: a routing protocol for enhanced efficiency in wireless sensor networks.,” in ipdps, 2001, vol. 1, p. 189. instruction facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 151 158 doi: 10.2298/fuee1601151g application of infrared thermography to non-contact testing of ad/dc power supply  stanisław galla, alicja konczakowska gdansk university of technology, gdansk, poland abstract. testing of ac/dc power supplies using the thermography was carried out in order to assess their assembly and operation correctness before launching them on the market. the investigation was carried out for 17 ac/dc power supplies which passed the standard tests (measurements of their basic parameters and characteristics). the investigation consisted of two steps. in the first step the dispersion of temperature on power supply boards was measured after 20 minutes operating in nominal conditions. three regions were defined as potentially revealing a failure. in the second step the acceptable temperature increments on the boards of tested power supplies were evaluated. it was proposed to assess properties of power supplies on the basis of temperature increments on their boards, registered by an infrared camera either for 12 minutes or up to 20 minutes. key words: thermography, testing, power supply 1. introduction diagnostics of electronic systems is an actual problem of their manufacturing. particularly significant are such testing and fault identification methods that enable diagnostics without interfering with a tested system or tested components. the examples of such solutions (nondestructive testing) are: quality (reliability) evaluation on the basis of inherent noise [1-7], resonant ultrasound spectroscopy technique [8] or infrared thermography inspections [9-16]. the thermographic technology offers very advantageous conditions for assessing properties of single components, parts of systems, as well as whole systems and also for detection of faults and defects on electronics boards [9-16]. using an infrared camera allows for the non-contact inspection of a tested object within the infrared radiation range. emission of the infrared radiation can be recorded without any interference with a diagnosed single component, whole system or its part. all components of the power supply mounted on the board are sources of radiation. each of these components has its own specified emissivity coefficient, which depends on received april 8, 2015; received in revised form september 2, 2015 corresponding author: alicja konczakowska gdansk university of technology, g. narutowicza 11/12, 80-233 gdansk, poland (e-mail: alkon@eti.pg.gda.pl) 152 s. galla, a. konczakowska its structure. it was assumed that the properly constructed components have similar coefficients of emissivity and that they will affect the temperature dispersion across the board only in a specific small range. a defective component or a defective assembly of the component will case anomalous temperatures. the mounted components are mainly smds. in the paper, applying the infrared thermography for the quality diagnosis of an ac/dc power supply for a fire station (u = 18 v, i = 3 a) is proposed. the diagnosis consists in the identification of a faulted component or part of a faulted system. in the paper an ac/dc power supply is abbreviated to ‘a power supply’. 2. thermography inspection of ac/dc power supply a procedure of the power supply inspection, applying the well-known thermographic technique is proposed, in order to determine the quality of every manufactured power supply (the correctness of assembly and operation), before launching it on the market. the thermographic method enables a non-contact measurement of the inspected surface temperature, in this case the surface of a power supply board. we assume that an incorrect assembly or an improper operation of a tested power supply will be indicated by an increase of its temperature. at the beginning of the thermographic investigations, in the first step, the typical temperature dispersion for a few high quality power supply boards was evaluated. the analysis of measurement results of the temperature dispersion (thermograms) enables recognizing regions with highest local temperatures of a power supply board. these regions have to be inspected if the thermograms reveal some improprieties. in this case, an investigated power supply may be not classified as operating properly. as a result, the research will determine thermographic test duration. in the second step, the temperature increment measurement technique is used during the power supply operation, i.e. comparing temperature increments at the test starting moment t = t0 and in successive moments t = ti, where i = 1, 2, …, n, and n is the number of observations (measurements) with an infrared camera till the end of testing, i.e. to t = tn. it was assumed that at the moment t = t0 the temperature increment on the power supply board is constant, i.e. tmax0 – tmin0 = ∆t0 = 0. it was also assumed that tmaxi and tmini are, respectively, the maximum and minimum temperature values appearing on the board at the moments ti, where i = 0, 1, 2, …, n. after starting the inspection procedure, the temperature on the board starts changing and at successive moments t = ti temperature increments occur on the board; they are defined as: tmaxi – tmini = ∆ti, where i = 1, 2, …, n. the temperature increment values can be easy determined from the thermograms and enable comparisons of region properties during testing independently of their individual emission coefficients. the aim of investigation was to determine the time moment, ti, after turn on the power supply in terms of the effectiveness of detective of improper operating power supply. the thermograms during investigations were carried out with a vigo system s.a.'s vigocam v50 infrared camera equipped with a 35 mm lens, and the tested power supply boards were situated at the distance of 0.97 m. the dimensions of the observed surfaces of tested boards were: 73.5 mm x 105 mm. the relevant parameters of the infrared camera are summarized in table 1 [17]. application of infrared thermography to non-contact testing of ad/dc power supply 153 table 1 relevant parameters of vigocam v50 camera [17] parameter value/function description detector type non-cooled bolometric matrix (fpa) spectrum range 8‚14 μm thermal resolution ≤ 0.065°c (for temperature 30°c) to determine the properties of power supplies (ac/dc power supplies for a fire station: u = 18 v, i = 3 a) the infrared thermography was used after a preliminary standard test of the power supplies was performed. the tested power supplies are assumed to be operating properly during the standard tests (measurements of basic parameters and characteristics of the power supplies). 3. results of investigation the investigation was carried out for 17 power supplies which passed successfully the standard tests consisting of measurements of their basic parameters and characteristics. the investigations consist of: in the first step:  the thermography inspection of the tested power supplies (the dispersion of temperature) after operating in nominal conditions after 20 minutes,  determining the regions with the maximum temperature values,  evaluating the regions with the maximum local temperature values, in the second step:  the thermography inspection of the tested power supplies during operating (the temperature increment measurement),  the elaboration of rules for the classification of power supplies for the sake of their quality. for investigated power supply the standard test duration (measurements of basic parameters and characteristics) is equal to 20 minutes; it is typical for examination of these power supplies. the temperature dispersion on the tested power supply board was checked after their 20, 40 and 180 minutes operation in normal conditions. thermograms revealed that the temperature dispersion on the board after 20 minutes is stable. in fig. 1a the thermogram of the power supply no. 3, taken after 20 minutes operating in nominal conditions is presented, the maximum temperature is equal to 75 o c. three regions with the highest local temperatures were recognized and they are marked on the power supply board, as presented in fig. 1b. one can expect that components operating in these regions will be the reason of a possible failure (this is most likely). of course, the increase of the temperature of the board may also result from a failure of any component located in other regions of the board. 154 s. galla, a. konczakowska a) b) fig. 1 the inspected power supply no. 3: a) thermogram taken after 20 minutes operating in nominal conditions, b) power supply board with the highest temperature regions marked: 1 –thermistor, 2 –main transformer, 3 –resistor. for the evaluation of the local maximum temperature values in the selected regions, the temperatures were measured during 20 minutes of operating of power supplies, after their earlier 20 minutes operation (stable state). the maximum temperatures for the investigated power supply were as follows: region 1 – 62,5 o c, region 2 – 56 o c, region 3 – 65 o c, and the dispersion of these local maximum temperatures were estimated as 5 o c for regions 1 and 3, and about 7 o c for region 2. the thermal data of thermistors, transformers and resistors applied in this type of power supplies are collected in table 2. the maximum temperatures of components taken from the technical data are higher than the measured ones in the investigated power supplies. it was found that the local maximum temperatures for every one of high quality power supplies can be similar. the inspection period equal to 20 minutes of power supply operating has been chosen for the second step. application of infrared thermography to non-contact testing of ad/dc power supply 155 table 2 thermal data of power supply components component temperature [ o c] remarks minimum maximum thermistor -55 +200 transformer -40 +125 made to order resistor -55 +155 the second step of examining 17 power supplies was concerned on the temperature increment measurements. the thermograms of power supply boards were taken by an infrared camera during 20 minutes of operating, after turning on a power supply. the number of measurement points was equal to n = 10; the measurements were taken every 2 minutes. the results of the temperature increment measurements on the tested boards surface are presented in fig. 2. a) b) fig. 2 the temperature increments ∆t for: a) 14 power supplies with similar temperature conditions, t – the mean heating characteristic, b) the power supply no. 16 – curve 1, no. 17 – curve 2, no. 8 – curve 3, tht – the threshold heating characteristic – curve 4. in fig. 2a results of the temperature increments for 14 power supplies are presented. it is easy to recognize that the values of temperature increments for all measurement points are similar. the mean value of these measurement results is presented in fig. 2a. formally, it is 156 s. galla, a. konczakowska the mean heating characteristic t of the investigated power supplies. the standard uncertainty u of t values at measurement points (fig. 2a) is greater for the starting point i = 1 (i.e. for t1 = 2 min), and smaller for final points i = 8, 9, 10 (i.e. for t8 = 16 min, t9 = 18 min, t10 = 20 min), and is equal to u1 = ± 4,6 o c, u8 = ± 2,5 o c u9 = ± 2,4 o c, and u10 = ± 2,3 o c, respectively. the mean heating characteristic t was approximated on the basis of measurement results by the relation: )] 12 exp(1[2222 t t  (3.1) this relation was estimated for time t ≥ 2 min. to the relation (3.1) at every measurement point the calculated standard uncertainty ui (i = 1, 2, …, 10) was added. this characteristic was approximated by the below relation, called the threshold heating characteristic tht : )] 12 exp(1[2224 t tth  (3.2) the relation (3.2), as tth is presented in fig. 2b, as curve 4. the value of tth evaluated for t = 12 minutes or 20 minutes, enables evaluation the quality of investigated power supply according to the following classification rules: ∆t ≤ 38ºc a high quality power supply ∆t evaluated for t = 12 min ∆t > 38ºc a poor quality power supply or (3.3) ∆t ≤ 42ºc a high quality power supply ∆t evaluated for t = 20 min ∆t > 42ºc a poor quality power supply where: 38 o c, and 42 o c are the threshold heating values of temperature increments for the above test durations, respectively, see fig. 2b, and ∆t is the value of temperature increment evaluated for the investigated power supply after its operation for 12, and 20 minutes, respectively. if the temperature increment at t6 = 12 minutes is higher than 38 o c, it means that the investigated power supply has to be additionally examined, especially its components from three defined regions. in such a case we propose to perform a quality procedure by the infrared thermography inspection, which takes only 12 minutes of operation of the investigated power supply. a different value of tth can be also applied in the classification rules (3.3), but for a suitable time of power supply operating, for example tth equal to 41 o c at t = 16 minutes. it was surprising that for 3 power supplies (no. 8, no. 16 and no.17) the results of temperature increment measurements totally differed from those obtained for the rest 14 power supplies. all power supplies are assumed to be operating properly during the standard tests. the results of temperature increment measurements for power supplies no. 16, no. 17 and no. 8 are presented in fig. 2b, as curves 1, 2, 3, respectively. especially surprising is the result of the temperature increment measurements for the power supply no. 16. after 20 minutes of operating the temperature increment was equal to 77 o c. application of infrared thermography to non-contact testing of ad/dc power supply 157 for the power supplies no. 8, no. 16 and no. 17, very detailed measurements of their parameters, and characteristics were carried out, supplemented by the mechanical inspection of transformers. it was found that the problem lied in the construction of transformers (the transformer core being unglued – no. 8 and no. 17, and an asymmetrical winding on the transformer core – no. 16). as can be seen (fig. 2b, curves 1, 2, 3), the temperature increment levels for the power supplies no. 16, no. 17 and no. 8, from the beginning of measurements are significantly higher than the threshold heating characteristic tth (fig. 2b, curve 4). if the classification rules (3.3) are applied, these power supplies will be classified as poor quality power supplies. below, the other case of failure has been described. the thermistor failure was triggered off (catastrophic failure, short circuit) after 8 minutes of power supply operation. the results of the temperature increments measurements of this power supply are presented in fig. 3. fig. 3 temperature increments ∆t for power supply for which the fail of thermistor was triggered off after 8 minutes of power supply operating. the temperature increment rapidly increased at t4 = 8 minutes, and then it rapidly decreased and this incident brought the total failure of the investigated power supply. changing ∆t as a function of time from the measurement starting point t = 2 minutes to the point t = 8 minutes, after turning on the investigated power supply, is compatible with the characteristics of the heating power supplies (fig. 2a). the experiment showed that the thermistor damage results in a temporary increase of the temperature of the investigated power supply board. the presumption is that such damage may occur at any time during the power supply operation. therefore, it is difficult to detect such damage during the first minutes of its operation (but, of course, it is also possible). in this case the temperature increment ∆t, measured on the power supply board in time t = 12 minutes is smaller than the threshold value tth of heating characteristics. this is an indication that some component of the power supply was destroyed. 3. conclusion the investigations carried out for ac/dc power supplies revealed a necessity of evaluating their quality. to sum up, checking the quality of power supplies within the period from 12 minutes to 20 minutes consists in determining whether the temperature increment ∆t on the board 158 s. galla, a. konczakowska is the correct one or if it exceeds the threshold value. if ∆t is greater than the threshold value, detailed tests must be carried out in order to find what has been damaged. if the temperature increments are in order of 24 o c after 12 minutes of power supply operating, it means that the classification rules (3.3) are not satisfied. in this case some catastrophic failure of components can be expected. the described procedure is used for ac/dc power supplies testing before launching them on the market. the proposed scenario of the thermographic investigation can be applied for other systems. all steps of the investigation should be realized. references [1] l. hasse, s. babicz, l. kaczmarek, et al. ”quality assessment of zno-based varistors by 1/f noise”, microelectronics reliability, vol. 54, pp. 192-199, issue 1, january 2014. [2] jae-hyung jang, hyuk-min kwon, ho-young kwak, et al. ”effect of fluorine implantation on 1/f noise, hot carrier and nbti reliability of mosfets”. ieice transactions on electronics, vol. e96.c, pp.624-629, no. 5, 2013. [3] zhuang yiqi and bao junlin. ”1/f noise and g-r noise related to reliability in optoelectronic coupled devices”, in proceedings of the 22nd international conference on noise and fluctuations. montpellier, france, jun, 2013, pp. 24-28. [4] h. k. chan, r. c. stevens, j. p. goss, et al. ”reliability evaluation of 4h-sic jfets using i-v characteristics and low frequency noise”. in proceedings of the 9th european conference on silicon carbide and related materials. st. petersburg, russia, sep 02-06, 2012 and silicon carbide and related materials 2012, book series: materials science forum, vol. 740-742, 2013, pp. 934-937. [5] b. k. jones, ”electrical noise as a reliability indicator in in electronic devices and components”. iee proc. circuits devices syst., vol. 149, pp. 13-22, no. 1, february 2002. [6] a. konczakowska, ”methodology of semiconductor devices classification into groups of differentiated quality”, microelectronics reliability, vol. 48, pp. 87-97, issue 1, january 2001. [7] c. ciofi and b. neri, ”low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices”, journal physics d: applied physics, vol. 33, pp. 199-216, 2000. [8] l. hasse, a. konczakowska and j. smulko, ”classification of high-voltage varistors into groups of differentiated quality”. microelectronics reliability, vol. 49, pp. 1483-1490, issue 12, december 2009. [9] r. lethiniemi, ”bibliography of the application of infrared thermography to electronics”. thermosense xxi, in proceedings of the society of photo-optical instrumentation engineers (spie), vol. 3700, 1999, pp. 202-208. [10] st. galla and a. konczakowska, ”application of infrared thermography to the non-contact testing of varistors”, metrology and measurement systems, vol. 20, pp. 677-688, issue 4, 2013. [11] s. j. hsieh, ”survey of thermography in electronic inspection”. thermosense: thermal infrared applications xxxvi, in proceedings of spie. vol. 9105, 2014. [12] b. giron-palomares et al., ”evaluation of nonintrusive active infrared thermography technique to detect hidden solder ball defects on plastic ball grid array components”, journal of electronic packaging, vol. 136, pp. 31008-31016, issue 3, 2014. [13] w. minkina and s. dudzik, infrared thermography – errors and uncertainties. john wiley & sons ltd, chichester, 2009. [14] h. kaplan, practical applications of infrared thermal sensing and imaging equipment. 3rd ed., spie, 2007. [15] m. vollmer and k. p. möllmann, infrared thermal imaging: fundamentals, research and applications. john wiley & sons. wiley-vch verlag gmbh & co. kgaa, 2011. [16] b. więcek and g. de mey, infrared thermovision; foundations and applications. pak warszawa, 2011. [17] www.vigo.com.pl instruction facta universitatis series: electronics and energetics vol. 30, no 4, december 2017, pp. 585 597 doi: 10.2298/fuee1704585b spectral parameters for finger tapping quantification * vladislava n. bobić 1 , milica d. djurić-jovičić 2 , nathanael jarrasse 3 , milica ječmenica-lukić 4 , igor n. petrović 4 , saša m. radovanović 5 , nataša dragašević 4 , vladimir s. kostić 4 1 school of electrical engineering, university of belgrade, serbia 2 innovation center of school of electrical engineering, university of belgrade, serbia 3 institut des systèmes intelligents et de robotique, université pierre et marie curie, paris, france 4 neurology clinic, clinical center of serbia, medical faculty, university of belgrade, serbia 5 institute for medical research, university of belgrade, serbia abstract. a miniature inertial sensor placed on fingertip of index finger while performing finger tapping test can be used for an objective quantification of finger tapping motion. temporal and spatial parameters such as cadence, tapping duration, and tapping angle can be extracted for detailed analysis. however, the mentioned parameters, although intuitive and simple to interpret, do not always provide all the necessary information regarding the subject’s motor performance. analysis of frequency content of the finger tapping movement can provide crucial information about the patient's condition. in this paper, we present parameters extracted from spectral analysis that we found to be significant for finger tapping assessment. with these parameters, tapping’s intra-variability, movement smoothness and anomalies that may occur within the tapping performance can be detected and described, providing significant information for further diagnostics and monitoring progress of the disease or response to therapy. key words: frequency analysis, finger tapping, parkinson's disease. 1. introduction patients with parkinson’s disease (pd) exhibit severe motor problems; therefore objective assessment of their movements is crucially important for diagnostics and evaluation of progress of the disease. frequency analysis is widely used for such assessment of parkinsonian patients. some usual frequency-derived measures obtained from fast fourier transform (fft), such as amplitude, median power frequency, power dispersion, and power received november 29, 2016; received in revised form march 29, 2017 corresponding author: vladislava n. bobić school of electrical engineering, university of belgrade, kralja aleksandra blvd. 73, 11120 belgrade, serbia (e-mail: vladislava.bobic@yahoo.com) * an earlier version of this paper received best section paper award at 3rd international conference on electrical, electronic and computing engineering, icetran 2016, zlatibor, serbia, june 13 – 16, 2016 [1]. 586 v. n. bobić, m. d. djurić-joviĉić, n. jarrasse, m. jeĉmenica-lukić, et al. percentage within the 4–7 hz frequency range were used for quantification of hand tremor [2]. body-area inertial sensing system and signal processing based on filter-bank analysis and cross correlation were used for the interpretation of tremor frequency and energy [3]. one study proposed a new technique for tremor detection from gyro data [4] that comprises empirical mode decomposition and the hilbert spectrum, introducing the concept of instantaneous frequency in the field of tremor. frequency-derived measures were extracted from the results of the welch's averaged modified periodogram method of spectral estimation performed on the acceleration data and used for assessment of stride-to-stride variability in pd patients and healthy controls in real-life settings [5]. they defined four parameters for the main peak of the power spectral density function: its frequency, the amplitude, the width at half of its amplitude and the slope from the point of the peak’s maximum to the point of half of the peak’s amplitude. body motion of pd patients was also assessed by using a maximum-likelihoodestimator-based fractal analysis method for triaxial accelerometer data [6]. freeze of gait in patients with pd was quantified from the power spectral density of the shank acceleration [7]. researchers defined a new index, named frequency ratio as the square of the total power in the 3–8 hz band, divided by the square of the total power in the 0.5–3 hz band. results showed that the defined parameter can be used for better differentiation between patients than traditional gait spatial measures. although spectral components hidden in the performed movement can indicate motor impairment [8], fourier analysis is not the most effective tool for the analysis of transient behavior or discontinuities that are typical for human movement. in such case, timefrequency algorithms can provide detailed analysis of signal’s frequency content over time, allowing detection of localized features in specific time moments. time-frequency algorithms short-time fourier transform (stft), and wavelet transform (wt) have already been used in many studies in the field of human movement [9][11]. detection of transient episodes and tripping in inertial data can be performed with both stft and discrete wavelet transform [12]. however, wavelets proved to be superior at describing anomalies, pulses and other transient events that start and stop within a movement signal [13]. parameters expressing main frequencies, pattern decrement and activity volume of the basic finger tapping rhythm and vigor of the performed movements were extracted from the coefficients of the results of continuous wavelet transform performed on gyro signals, providing classification between pd patients and healthy subjects [14]. neurological disorders, including parkinson’s disease [15], can affect smoothness of the patient’s motor performance. because of that, objective measure of movement smoothness can be a very important segment of the assessment of the patient’s motor abilities. it was shown that frequency analysis can provide information about movement smoothness by analyzing the spectral arc length (sparc) [16]. repetitive finger tapping represents one of the descriptive characteristics of the patient motor ability that is included in unified parkinson’s disease rating scale (updrs test, e.g., fahn et al, 1987 [17]). in clinical practice, the finger tapping performance is often validated visually, which results in a low diagnostic resolution [18]. however, using the appropriate instrumentation, such as miniature inertial sensors, finger tapping performance can be quantified, allowing the objective assessment of specific characteristics or changes in the finger tapping pattern over time [19]-[20]. our goal is to offer a new method for the objective quantification of finger tapping performance that is regularly used for assessment and visually estimated by physicians. we spectral parameters for finger tapping quantification 587 suggest a set of frequency derived parameters that can provide the assessment of tapping’s rhythmic behavior, vigor of its performance, intra-variability, tremor and motor blocks. in this way, the quantitative assessment of repetitive finger tapping performance can be obtained thus providing support in monitoring of the patient's condition, response to therapy as well as in differential diagnostics of parkinsonism. 2. methods and materials instrumentation the instrumentation includes an inertial sensor unit comprising a 3d gyroscope l3g4200 (stmicroelectronics, usa) [21]. in our system, the small sized (10x12 mm) and lightweight (3 g) sensor is placed on a fingertip of the subject’s index finger (fig. 1). the sensor is connected to its sensor control unit (scu), positioned on the forearm, by thin, light, flexible and loose cable. the designed instrumentation and mounting concept secure that movement path and range are not hindered in any aspect. different technical and mounting solutions (sensor gloves, wireless sensors) have also been considered, however, all of them showed certain shortcomings in terms of size, weight (e.g. having wireless sensor on fingertip requires mounted battery which increases the size and weight), limited performance and tactility (gloves), as well as hygiene and price. the signals are collected by scu and wirelessly transmitted to a remote computer. custom-made graphical user-friendly interface, which is developed in cvi (cvi 9.0, ni labwindows, usa), controls the data acquisition, storing and provides export (ascii comma separated value (csv) format) for further analysis. fig. 1 system setup: sensor (s) positioned on fingertip connected to sensor control unit (scu) mounted on the subject’s hand. experiments twenty patients with parkinson's disease (age: 61,39±9,7), and twelve age and gender matched controls (age: 56,53±9,13) were enrolled in this study. during the performance, subjects were sitting comfortably in a chair, with their hand placed in front of them. as the part of the test, they repeatedly tapped index finger and thumb as rapidly and as widely as possible for 15 s, as described in [19]. each recording began and ended with their fingers closed at the "zero-posture”. for each subject, three trials per affected hand were recorded. a resting period of one minute in between was given; because fatigue may compromise the performance. 588 v. n. bobić, m. d. djurić-joviĉić, n. jarrasse, m. jeĉmenica-lukić, et al. the study was performed at the neurology clinic, clinical centre of serbia, belgrade in accordance with the ethical standards of the declaration of helsinki. all the participants gave informed written consent prior to the participation in the study. signal processing angular velocity was recorded using digital gyroscopes with the sampling frequency fs=200 hz, calibrated and directly processed by custom-made matlab script (matlab 7.6.0., r2008a). the examples of recorded signals for one healthy control (ctrl) and two pd patients are presented in fig. 2. fig. 2 the examples of recorded gyro signals for: two pd patients and one ctrl subject. firstly, tapping performance was described with parameters typically used for tapping description [19]:  duration of the taps tt – expressed in seconds,  tapping cadence ct – expressing the number of taps in the observed 15 s long sequence,  angle that index finger forms relative to the “zero posture” of the fingers αt – expressed in degrees. additionally, continuous wavelet transform (cwt), welch's averaged modified periodogram method of spectral estimation and spectral arc length method (sparc) [16] were applied on the observed 15 s long sequences of the signal. the methods were performed for the frequency range between 0.01 and 20 hz (the frequency increment 0.01 hz), covering the complete possible spectral content of finger tapping. continuous wavelet transformation continuous wavelet transformation based on fft algorithm was applied on the 15 s long sequences of the gyro signal. for this application, we used a mother wavelet from complex morlet wavelet family, with center frequency f0=1 hz and time-frequency resolution σ=0.7. the fourier transform of wavelet function was found for each scale (reciprocal of each frequency from the defined band 0-20 hz) and multiplied by the representation of the gyro signal in the frequency domain. complex cwt coefficients were obtained using the inverse fourier transform and then normalized with the weighting function i.e., by dividing the coefficients by the square root of the scale. the final result is obtained in the spectral parameters for finger tapping quantification 589 form of matrix, with the same time resolution ∆t=5 ms (∆t=1/fs=1/200 hz) as the original gyro signal (no additional interpolation or down sampling were performed). the examples of obtained cwt coefficients, presented in the shape of a 3d scalogram, are shown in fig. 3. the scalogram represents an original color-coded illustration of wavelet coefficients. for this application, we used jet colormap, where small amplitudes are represented with the cold color tones (starting from navy blue), whereas warmer colors (ending with dark red) follow the increase of the amplitude. fig. 3 3d representation of cwt coefficients. an example is given for patient pd1. in order to observe temporal changes of tapping activities, we defined cross-sectional area perpendicular to the t-axis (csa-ttot) [14]. csa-ttot was calculated by summing the absolute values of cwt coefficients, and finally expressed as percent of the maximum energy of csa-ttot characteristic. by introducing two thresholds at 50 and 25% (light and dark dashed grey lines in fig. 4, respectively), we found signal parts where tapping performance was compromised causing energy loss below two defined levels. fig. 4 representative example of csa-ttot [%] distribution given for one pd patient. light and dark dashed grey lines mark two defined thresholds at 50 and 25%, whereas dashed blue and solid red rectangles outline signal parts with energy loss below defined levels (50 and 25%, respectively). 590 v. n. bobić, m. d. djurić-joviĉić, n. jarrasse, m. jeĉmenica-lukić, et al. in this way, tapping performance can be described regarding the disturbance of its basic rhythmic behavior e.g., motor blocks. we introduced two parameters representing the duration of the detected anomalies, expressed in seconds (cwt<50 and cwt<25, respectively). welch's method of spectral estimation power spectral density was calculated with welch’s method of spectral estimation. for this application, a window size of 800 samples and overlap between the windows of 50% were applied. a fft length was 2 times the next higher power of 2 of the signal length. for each subject, we extracted four parameters for the main peak i.e., the dominant harmony of the obtained power spectral density function (fig. 5) [5]:  the frequency of the peak – f;  the amplitude of the peak – h;  the width of the peak at half of its amplitude – w (the red lines in fig. 5);  the slope of the peak, calculated from the point of half of the peak’s amplitude to the peak’s maximum point – s (the blue lines in fig. 5). fig. 5 representation of power spectral density function. blue line marks slope of the peak, whereas red line shows width of the peak at half of its amplitude. the examples are given for: one ctrl subject (top panel) and two pd patients (middle and bottom panels). spectral parameters for finger tapping quantification 591 sparc method for assessment of tapping smoothness spectral arc method is used for the assessment of smoothness of signals describing any rhythmic sensorimotor behavior [22]-[24]. sparc method applied here is modified spectral arc length method, defined in [16]. it represents the signal smoothness as a single scalar, by calculating the arc length of the fourier spectrum within the defined frequency range of a given velocity. final value of this parameter was expressed as negative logarithm of the calculated arc length. bigger values correspond to greater smoothness. smoothness was calculated for the upward trend of the taps, because it corresponds partially to both opening and closing but it doesn’t include the moment when fingers are closed, which may cause some changes in the signal and thus introduce error. the procedure was repeated for all the taps, which were previously segmented. for each subject we calculated the total measure of tapping smoothness, expressed as descriptive statistics (average ± std.dev), and the trend of change in smoothness across all segmented taps, represented by the slope of the fitted linear regression line across the corresponding smoothness characteristic (the red dashed line in fig. 6). fig. 6 sparc smoothness characteristic with corresponding slope (red dashed line) for one ctrl subject (top panel) and two pd patients (middle and bottom panels). dashed blue rectangle marks detected change in movement smoothness. 592 v. n. bobić, m. d. djurić-joviĉić, n. jarrasse, m. jeĉmenica-lukić, et al. statistical analysis the two groups were compared using the t-test for two independent samples (if both groups satisfied the normal distribution) or mann-wilcoxon test (if the distributions were not normal). statistical significance was determined with 2-tailed tests when p<0.05. statistical analysis was performed in spss v17.0 (chicago, il). 3. results by observing the examples of recorded gyro signals (fig. 2), one can notice that the healthy subject had rapid and vigorous performance. patient pd1 performed even more rapidly, but less vigorously, less rhythmically and with noticeable amplitude changes within the signal, as the consequence of motor block that occurred during the performance. on the other hand, the patient pd2 had slower and non-smooth but more rhythmical tapping performance. results summarized for all the participants showing descriptive statistics (average ± std.dev) for the parameters expressing duration of tapping performance, tapping cadence and angles, as well as the statistical differences between the two groups are given in table 1. distributions of the introduced parameters are shown in fig. 7. although those parameters show statistically significant differences between the groups (the grey shaded cells in table 1), they cannot provide information about changes in tapping shape and the appearance of specific transient events, and therefore they are not suitable for the detection or description of such noticeable characteristics of tapping performance. because of that, the evaluation of tapping pattern needs to be supplemented with the frequency analysis of gyro data. table 1 descriptive statistics of finger tapping duration, cadence and angle for both ctrl and pd subjects param. ctrl (av±std) pd (av±std) p-value tt [s] 0.32 ± 0.07 0.65 ± 0.41 0.001 ct [taps/s] 49.00 ± 13.02 30.40 ± 17.22 0.001 αt [°] 61.88 ± 18.18 39.53 ± 18.74 0.024 in order to provide the complete analysis of tapping data, we applied cwt, sparc and welch's method of spectral estimation on the 15 s long sequences of the signal. continuous wavelet transformation has an important role in the detection and localization of anomalies that may appear within movement signal. patient pd1 had some changes in the tapping motion which are obvious from the raw gyro signal (marked with the solid red rectangle in fig. 4). by using the cwt method, this disturbance can be described in terms of the degradation level (below 25% of the maximum performing energy) and duration. however, the suggested technique allowed detection of another not so noticeable tapping "anomaly" (marked with the dashed blue rectangle, around 12 s), which could be left unnoticed otherwise. by combining csa-ttot function with a color-coded illustrative representation of cwt coefficients such as 3d scalogram (fig. 3), clinicians can assess anomalies in tapping performance, localize them in time and evaluate the duration and severity of those disturbances. spectral parameters for finger tapping quantification 593 by using parameters extracted from welch’s algorithm of spectral estimation, tap-to-tap variability can be assessed. sparc algorithm allowed calculation of tapping smoothness and its decrement in time. the combined frequency analysis of all three performed methods can provide clinicians with crucial information about tapping performance that can be used for further analysis, or assistance in diagnostics. the applied analysis is summarized in table 2, showing descriptive statistics (average ± std.dev) for the listed frequency parameters for all the subjects, as well as the statistical difference between the two groups. the statistically significant difference between pd patients and healthy subjects was found for all the parameters (except slope of sparc). in addition, for all ctrl subjects the value of cwt<25 parameter was equal to zero, indicating that none of them had severe energy loss below 25%, as opposed to pd patients who demonstrated the appearance of those anomalies in duration up to 5 s long. this indicates that cwt based evaluation is suitable for finger tapping quantification, with potential for differential diagnostics. table 2 descriptive statistics of cwt, welch and sparc based parameters of finger tapping for both ctrl and pd subjects param. ctrl (av±std) pd (av±std) p-value cwt<50 [s] 1.02 ± 1.49 5.23 ± 3.26 <0.001 cwt<25 [s] 0.00 ± 0.00 0.94 ± 1.74 0.023 f [hz] 3.47 ± 0.92 2.10 ± 1.21 0.002 h [psd] 1.34 ± 0.29 1.14 ± 0.39 0.039 s [psd/hz] 3.42 ± 0.70 2.90 ± 1.09 0.042 w [hz] 0.39 ± 0.04 0.42 ± 0.07 0.041 sparc -3.13 ± 0.13 -3.69 ± 0.70 0.001 sparcs -0.0005 ± 0.003 -0.03 ± 0.05 0.373 the distributions of cwt<50 and four psd based parameters for two groups of subjects (ctrl and pd) are shown in fig. 7. sparc smoothness parameter distributions are presented for 10 randomly selected healthy subjects and 10 pd patients with different patterns of tapping performance and shown in the form of a boxplot in the bottom panel in fig. 7. based on the presented results of the applied sparc analysis, it can be seen that healthy subjects have small intraand inter-subject variability of tapping smoothness. on the other hand, patients with pd have wider range of sparc index within their tapping patterns (intra-variability) as well as within the group (inter-variability). this cognition proves that sparc parameter is suitable for the analysis of tapping performance and has potential for differential diagnostics. 594 v. n. bobić, m. d. djurić-joviĉić, n. jarrasse, m. jeĉmenica-lukić, et al. fig. 7 boxplot representation of all listed parameters for both ctrl subjects and pd patients. spectral parameters for finger tapping quantification 595 4. discussion and conclusion tapping performance can be described with temporal and spatial parameters, describing tapping duration and cadence and angle between fingers at maximum opening. although the mentioned characteristics of tapping performance can be used for distinction between healthy individuals and patients (table 1), they are not suitable for the detailed analysis of changes that may occur within tapping performance, movement variability and smoothness. therefore, the analysis should be supplemented with other techniques that can provide such evaluation of tapping performance. in this paper, three frequency based methods were applied on gyro signal acquired from one miniature sensor mounted on the subject’s index finger, and the results of performed techniques are used for quantification of finger tapping performance. by implementing continuous wavelet transform, the frequency content of signal can be observed over time (fig. 3), but also analyzed in terms of energy changes that can be useful for anomaly detection (the solid red rectangle in fig. 4). two cwt based parameters expressing the duration of energy loss below 50% and 25% proved to be statistically different between groups (the grey shaded cells in table 2). in previous research studies, the smaller slope and larger width of the dominant frequency within welch’s power spectral density function were defined as indicators of the greater signal intra-variability. the most prominent peak of the psd function was explained with f, h, s and w parameters which proved to be statistically different between the two groups of subjects (the grey shaded cells in table 2). for pd group, the smaller slope and higher values of width parameters comparing to ctrl group, indicate prominent tapping intra-variability for pd patients. this discovery agrees with the result from weiss et al, performed on gait data [5]. sparc based parameter provide the assessment of movement smoothness, whereby bigger values indicate smoother movements. in this paper, it was demonstrated (table 2, fig. 7) that pd patients have decreased movement smoothness, with statistically significant difference from healthy subjects. by implementing this method, patient’s motion smoothness and its decrement in time can be assessed. also, the combined analysis of these methods allows detection of some changes (the dashed blue rectangle in fig. 4 and fig. 6), which aren’t obvious from the gyro signal, and therefore can be overlooked. based on the presented analysis, finger tapping can be quantified in terms of its rhythmic behavior, the vigor of its performance, tapping intra-variability, tremor and motor blocks that can occur within the tapping performance. these methods allow monitoring of patient’s response to therapy and progress of the disease, and comparison with other evaluated patients. in the future, defined parameters will be complemented with additional parameters which can provide the complete assessment of tapping movement. designed methodology will be implemented for automated differential diagnostic system. acknowledgment: this work was partially supported by the serbian ministry of education, science and technological development under grant no. 175016, grant no. 175090 and grant “pavle savic” bilateral collaboration with france. we would also like to thank phd student minja belić for assisting with recordings. 596 v. n. bobić, m. d. djurić-joviĉić, n. jarrasse, m. jeĉmenica-lukić, et al. references [1] v.n. bobić, m. d. djurićjoviĉić, n. jarrasse, m. jeĉmenica-lukić, i. n. petrović, s. m. radovanović, n. dragašević and v. s. kostić, “frequency analysis of repetitive finger tapping – extracting parameters for movement quantification”, in proceedings of the 3rd international conference on electrical, electronic and computing engineering (icetran 2016), zlatibor, serbia, june 13 – 16, 2016, pp. mei2.2 1-5 [2] c. duval, "rest and postural tremors in patients with parkinson's disease", brain research bulletin, vol. 70, no. 1, pp. 44-48, 2006. [3] h. c. powell, m. a. hanson and l. john, "on-body inertial sensing and signal processing for clinical assessment of tremor", biomedical circuits and systems, ieee transactions on, vol. 3, no. 2, pp. 108116, 2009. [4] e. rocon, j. l. pons, a. o. andrade and s. j. nasuto, "application of emd as a novel technique for the study of tremor time series", in proceedinigs ieee eng med biol soc conf, 2006, pp. 6533-6536. [5] a. weiss, s. sharifi, m. plotnik, j. p. van vugt, n. giladi and j. m. hausdorff, "toward automated, athome assessment of mobility among patients with parkinson disease, using a body-worn accelerometer", neurorehabilitation and neural repair, vol. 25, no. 9, pp. 810-818, 2011. [6] m. sekine, m. akay, t. tamura, y. higashi and t. fujimoto, "fractal dynamics of body motion in patients with parkinson's disease", journal of neural engineering, vol. 1, no. 1, pp. 8, 2008. [7] s. t. moore, h. g. macdougall, and w. g. ondo, “ambulatory monitoring of freezing of gait in parkinson’s disease,” j. neurosci. methods, vol. 167, no. 2, pp. 340–348, 2008. [8] i. shimoyama, t. ninchoji and k. uemura, "the finger-tapping test: a quantitative analysis", arch neurol, vol. 47, no. 6, pp. 681-684, 1990. [9] g. strang, "wavelet transforms versus fourier transforms", bulletin of the american mathematical society, vol. 18, pp. 288–305, 1993. [10] t. m. e. nijsen, p. j. m. cluitmans, p. a. m. griep and r. m. aarts, ”short time fourier and wavelet transform for accelerometric detection of myoclonic seizures”, embs benelux symposium, pp. 155158, december 7-8, 2006. [11] a. napieralski, z. ciota, m. janicki, m. kamiński, r. kotas, p. marciniak, a. mielczarek, m. napieralska, r. ritter, b. sakowicz, w. tylman and m. zubert, “examples of medical software and hardware expert systems for dysfunction analysis and treatment”, facta universitatis, series: electronics and energetics, vol. 28, no. 1, pp. 29-50, 2014. [12] m. a. hanson and l. john, "assessing joint time-frequency methods in the detection of dysfunctional movement", in proceedings of the fortieth asilomar conference on signals, systems and computers, 2006. acssc'06, 2006. [13] b. xu, a. song and j. wu. "algorithm of imagined left-right hand movement classification based on wavelet transform and ar parameter model", in proceedings of the 1st int. conf. on bioinformatics and biomedical engineering, icbbe 2007, 6-8 july 2007, pp. 539-542. [14] m. d. djuric-jovicic, v. n. bobic, m. jecmenica-lukic, i. n. petrovic, s. m. radovanovic, n. s. jovicic, v. s. kostic and m. b. popovic, "implementation of continuous wavelet transformation in repetitive finger tapping analysis for patients with pd", in proc of the 22nd telecommunications forum telfor 2014, ieee, 2014, pp. 541-544. [15] j. jankovic and j. d. frost, "quantitative assessment of parkinsonian and essential tremor clinical application of triaxial accelerometry", neurology, vol. 31, no. 10, pp. 1235-1235, 1981. [16] s. balasubramanian, a. melendez-calderon, a. roby-brami and e. burdet, "on the analysis of movement smoothness", journal of neuroengineering and rehabilitation, vol. 12, no. 1, pp.1, 2015. [17] s. fahn and r. l. elton, “unified parkinsons disease rating scale”, in: s. fahn, c. d. marsden, m. goldstein and d. b. calne, recent developments in parkinsons disease ii, committee mot ud, new york: macmillan, pp. 153-63, 1987. [18] á. jobbágy, p. harcos, r. karoly and g. fazekas, "analysis of finger-tapping movement", journal of neuroscience methods, vol. 141, pp. 29–39, 2005. [19] m. djurić-joviĉić, i. petrović, m. jeĉmenica-lukić, s. radovanović, n. dragašević-mišković, m. belić, v. miler-jerković, m. b. popović and v. s. kostić, “finger tapping analysis in patients with parkinson’s disease and atypical parkinsonism”, journal of clinical neuroscience, vol. 30, pp. 49-55, 2016. [20] s. r. muir, r. d. jones, j. h. andreae and i. m. donaldson, "measurement and analysis of single and multiple finger tapping in normal and parkinsonian subjects", parkinsonism & related disorders, elsevier science ltd, great britain, vol. 1, no. 2, pp. 89-96, 1995. [21] n. s. joviĉić, l. v. saranovac and d. b. popović, "wireless distributed functional electrical stimulation system", journal of neuroengineering and rehabilitation, vol. 9, no. 1, pp. 1-10, 2012. spectral parameters for finger tapping quantification 597 [22] s. balasubramanian, a. melendez-calderon and e. burdet, “a robust and sensitive metric for quantifying movement smoothness”, ieee transactions on biomedical engineering, vol. 59, no.8, pp. 2126-2136, 2012. [23] v. crocher, j. fong, m. klaic, d. oetomo and y. tan, “a tool to address movement quality outcomes of post-stroke patients”, in replace, repair, restore, relieve–bridging clinical and engineering solutions in neurorehabilitation. springer international publishing, 2014, pp. 329-339. [24] s. estrada, m. k. o'malley, c. duran, d. schulz and j. bismuth, “on the development of objective metrics for surgical skills evaluation based on tool motion”, in proceedings of the 2014 ieee international conference on systems, man, and cybernetics. ieee, 2014, pp. 3144-3149. instruction facta universitatis series: electronics and energetics vol. 28, no 2, june 2015, pp. 223 236 doi: 10.2298/fuee1502223m oscillation-based testing method for detecting switch faults in high-q sc biquad filters  miljana milić, vančo litovski faculty of electronic engineering, university of niš, serbia abstract. testing switched capacitor circuits is a challenge due to the diversity of the possible faults. a special problem encountered is the synthesis of the test signal that will control and make the fault-effect observable at the test point. the oscillation based method which was adopted for testing in these proceedings resolves that important issue in its nature. here we discuss the properties of the method and the conditions to be fulfilled in order to implement it in the right way. to achieve that, we have resolved the problem of synthesis of the positive feed-back circuit and the choice of a proper model of the operational amplifier. in that way, a realistic foundation to the testing process was generated. a second order notch cell was chosen as a case-study. fault dictionaries were developed related to the catastrophic faults of the switches used within the cell. the results reported here are a continuation of our previous work and are complimentary to some other already published. key words: obt method, sc filters, switch faults, fault dictionary. 1. introduction the synthesis of test signal is one of the essential problems in analog circuits testing. choices among many possibilities have to be made. first, one should select an analog test domain [1]. testing can be done by analyzing dc signals [2, 3, 4], signals in the frequency domain [5, 6, 7], as well as the signals in the time domain [8]. it is often necessary to use test signals from several domains simultaneously. if we use dc signals, then we search for fault effects related to the nonlinearities and quiescent conditions. a number of methods consider the time domain test signals selection [9, 10, 11]. in the frequency domain, one has to determine the most appropriate spectrum of the testing signal in order to achieve maximal fault effects. in the time domain one searches for one or more signal waveforms that will enable the fastest and the cheapest testing, in order to optimize the production and decrease the price of the product. a technique that does not require solving such problems since it needs no test signal is the oscillation-based test (obt), [12]. to implement this powerful method one has to create a feed-back during testing. by measuring the frequency of the created oscillator and by comparing that with the fault-free frequency, one can detect defective circuits. received may 16, 2014; received in revised form january 19, 2015 corresponding author: miljana milić faculty of electronic engineering, university of niš, aleksandra medevedeva 14, 18000 niš, serbia (e-mail: miljana.milic@elfak.ni.ac.rs) 224 m. milić, v. litovski structural testing is a concept where test signals that detect one or more faults are created. to detect all most possible faults we need many tests. in obt all possible defects are targeted with only one measurement since they all affect the oscillation frequency. here comes the major difference in oscillator design. regular oscillators are created to be insensitive to the presence of parameter variations. on the other hand, obt oscillators and their oscillation frequency should be as much sensitive to parameter variations as possible. unfortunately, the obt technique cannot be automated, since each analog circuit is unique. that is the biggest difficulty in implementing the method. unlike other testing approaches where numerous and most appropriate testing points have to be selected, observed, and captured signals processed, [13], the number of obt test points is one, i.e. the oscillator‟s output. nevertheless, the problem of measurement is not solved, since one has to decide which parameters of the response should be measured and extracted. there are also other problems related to obt implementation. first, bringing the oscillations into a stable state can slow down the testing process. second, in rare situations observing just one testing point (for example, the output voltage), cannot show the fault effect, so additional measurements are needed, such as iddq [14, 15]; additional voltage waveforms [16]; or even mixing domains, including physical redesign of the original circuit to create access points for measurement [17]. problems of needed test (measurement) points and most appropriate quantities of observation for determining the state of the circuit should be solved [18, 19]. the oscillation based testing (obt) method [12, 20, 21] has been drawing our attention for a relatively long period. the main reason for that was the fundamental discrepancy between the theoretical developments reported by the original authors and the practical implementation of the method. namely, as elaborated in [22, 23, 24] the original method is based on the presumption that the operational amplifiers (oa) (or active amplifying elements) within the circuit under test (cut) perform ideally as if the frequency is equal to zero. in practice, that is not the case. in fact, at the oscillation frequency the modulus and the phase of the gain of the operational amplifier(s) are so degraded that it makes the theoretically developed expressions not only impractical but also misleading. both the oscillation frequency of the fault-free (ff) and faulty circuits (fc) obtained by the closed form expression derived based on the original method are far from the real ones. later implementations of the obt concept [25, 26, 27, 28, 29, 30] suffer from the same drawback. namely, if one generates a fault dictionary using closed form formulae (or even by simulation) based on use of ideal model of the operational amplifier, and then verifies the results by (repeated) simulation based on the same models, one does not notice the fundamental problem: the gain and the phase distortions of the operational amplifier are not negligible and the fault dictionaries are far of the realistic ones. it is worth mentioning that, admittedly, the need to include the operational amplifier's phase shift in the evaluation of the oscillation frequency for implementation of the obt method to continuous time analog filter was mentioned earlier in the literature [31]. the idea was, however, implemented in the frequency domain and led to conclusions quite different than the ones we reported in [22]. we find the implementation of the obt method for continuous time filters reported in [32] to be the proper one. there, of course, due to the complexity of the cut the developments in the frequency domain were, simply, not feasible. oscillation-based testing method for detecting switch faults in high-q sc biquad filters 225 based on those considerations we concluded that a different, not analytical, approach to the extraction of these two quantities based on realistic (dynamic) models of the operational amplifiers and time (not frequency) domain simulation is to be implemented. of course, that introduces an additional problem related to the overall time needed to get the fault dictionary (for as many faults as needed) since one needs to extract the oscillation frequency from a time domain signal which in turn has to reach a steady-state. the problems introduced in practical implementation of the obt, however, are broadly compensated by the sole fact that obt resolves the main problem in the test generation per se. namely in general, and especially for analog circuits, the synthesis of the testing signal is a problem above all. obt needs no test signal and, if testable, it exposes any fault present in the circuit. that enables simple implementation of the structural concept [33] to the test signal generation by which only selected faults (being the most probable) in the system are targeted. the obt method was implemented to several types of circuits (as listed in all references above) among which to switched capacitor (sc) filters [34, 35, 36, 37, 38]. the problem of the non-idealities was considered in [37] where, due to the difference between the conclusion obtained from the z-domain and from time domain, much attention was paid to the time domain simulation for generation of the fault dictionaries. there, a simple cmos transconductance amplifier was implemented in the schematic of the sc filter and a conclusion was drawn that the difference between the time and frequency domain analysis is to be attributed to the feed-back circuit. we believe that a purely resistive model of the transistors within the op-amp was used. it is well known, however, [39] that the op-amp implemented in sc circuits has to fulfill stringent requirements not only in the frequency domain (including the nominal gain and the cut-off frequency) but also in the dc domain (low offset), and in transient domain (high slew-rate). in addition, low noise requirements are usually imposed. for example, in [40] the authors recommend the lt1055 op-amp which, in fact, has a jfet at the input in order to reduce the noise. this is why, we think, the main circuit, not the feed-back, is imposing the need to have a much better model of the operational amplifier. that was illustrated in more detail in [22]. considering the obt method, a very important and powerful one, and having in mind the need for a more realistic implementation, we started to resolve the corresponding issues of implementation of obt to the testing of sc filter cells, one by one. the nature of the faults in sc circuits was studied in [41]. namely, within a circuit one may encounter parametric and catastrophic faults. parametric faults here are related only to the capacitance values. catastrophic faults may belong to the following categories: faults related to the connection lines, faults related to the capacitors, faults related to the switches (transistors), and faults related to the operational amplifiers. to generate a fault dictionary, however, one has to resolve the synthesis of the oscillator and the fault insertion method first. we first attacked the problem of synthesis of the feed-back loop that enables oscillation. the success was demonstrated on the simplest situation that is fault dictionary creation for parametric or soft faults. [42]. large changes were attributed to all capacitance values. introduction of catastrophic faults into a circuit that has active elements and feed-back loops is a challenging task since the fault may have several very dramatic consequences. firstly, a catastrophic fault may change the quiescent working conditions of the active elements, eventually bringing them in saturation or in cut-off. that fundamentally changes the circuit behavior and makes the simulation settings much more complicated. one is not to forget that the simulation of an oscillator is a specific 226 m. milić, v. litovski problem related to the conflict between the requirements for a stable numerical integration rule and simulation of an unstable electronic circuit. on the other side, a catastrophic fault may break the existing or establish a new feed-back loop that, again, leads to a totally new circuit with unknown properties and behavior. for that reason, when speaking of catastrophic faults, we first considered the capacitors in an sc notch cell [43]. after getting good results and after considerable experience was accumulated we are here attacking the second element type of the sc filters, the switches. the results reported here are complimentary to the ones reported in [43] (which are not repeated here) and we consider the present and the report given in [43] as completion of a single task. to our knowledge the fault dictionaries reported here are the first and unique base for testing a notch sc cell. the paper is structured in the following way. in the next section the analysis and design of the high q sc notch cell is described. then, in section 4, the obt is discussed and application described. there follow, in paragraph 5, the main results being related to the method of creation of the fault dictionary and the dictionary itself. here the discussion of the results is given too. 2. high q sc notch filter a switched capacitor (sc) is an integrated electronic element used in discrete time signal processing systems. the main idea is to use capacitors and switches to emulate the drawbacks of integrated resistors which have pure accuracy and temperature dependence properties. in that way discrete time systems are obtained from continuous time originals. the circuits so obtained use non-overlapping signals to control the switches, often termed break before make switching, so that all switches are open for a very short time during the switching transitions. filters implemented with these elements are termed 'switchedcapacitor filters'. the switching frequency may be used to control the response of the filters since the equivalent resistances are directly dependent on it. from the implementation point of view the sc filters are in between the analog and the digital ones. namely, while the signals are sampled they are not quantized so that their advantage over digital filters is the potential to achieve a high dynamic range. in the same time the need for analog-to-digital (ad) and digital-to-analog (da) conversion as well as digital signal processing (dsp) hardware is avoided. the analog output signal is simply restored by a low-pass filter. on the other side, besides the potential to be integrated in silicon which is not the case for the continuous time rc active filters, unlike continuous time filters (which have to be constructed with resistors, capacitors and sometimes inductors whose values are accurately known), switched capacitor filters depend only on the ratios between capacitances and the switching frequency. for all these reasons sc filters are an important class of integrated circuits and testing of sc filters is an important issue in electronic design. the physical realization of the sc filters is very frequently performed by cascading second-order cells. that concept will be followed here, too. a topology of a universal second order sc filter cell is depicted in fig. 1 [44, 45]. this is a well known fleischerlaker active sc filter [46]. by proper choice of the parameter values of the cell one may produce all four variants needed for complete filter design: low-pass (lp), band-pass (bp), band-stop (notch), and high-pass (hp). in these proceedings (as we did in our previous oscillation-based testing method for detecting switch faults in high-q sc biquad filters 227 research related to the obt method) the notch cell will be elaborated mostly because it may be stated as the most complex one. namely, it has to suppress part of the frequency band and has two pass-bands. in addition, when creating filters with transmission zeroes at the axis of real angular frequencies, this cell is used as many times as the number of transmission zeroes is (which usually is n/2-1, n being the order of the filter). practically only one additional cell of the type lp, bp or hp is enough to complete the filter realization. finally, it is not to forget that the use of a universal topology drastically simplifies the layout design since it allows for ‟programming‟ the layout on the chip. a3 1c a4c1 a2 1c a1 1c c1 a5 2c + + a6 2c c2vin vout f2f2 f2 f2 f2 f1 f1 f1 f1 f1 fig. 1 high q sc notch filter cell the transfer function of the cell t(s), obtained under presumption that the operational amplifiers have infinite gain (not frequency dependent) is given by 2 2 1 0 2 20 0 ( ) ( ) . ω( ) ω out in v s k s k s k t s v s s s q + +   + + (1) the element values of fig. 1 may be related to the coefficients of (1) in the following way [44]: 1 0 0α /ωk t (2) 2 5 0α α ω t  (3) 3 1 0α /ωk (4) 4α 1/q (5) 6 2α k , (6) where k0, k1, k2 are constants determining the position of the passband on the frequency axis, e.g. low-pass, band-pass, etc., while ω0 – notch frequency, q – quality factor, and t – non-overlapping clock period, are design parameters. in the specific case of a notch transfer function one should choose k0= (3∙ω0) 2 , and k1=0, k2=9. in the above expressions t stands for the sampling period and ω0=2πf0, is equal to the modulus of the pole of the cell which is, in the same time, equal to the notch frequency. 228 m. milić, v. litovski the cell is usually designed using (1). to do that we choose as an example for this study the following: f0=1 khz, q=10, t=10 μs (the frequency of the two-phase, nonoverlapping switching is 100 khz), and capacitances c1=c2=20 pf. the selected value of q, which is recognized as quality factor of the cell, is considered large, hence the name of the cell. after substitution of these values in (2)-(6) we obtain: ω0=6283.18 rad/s, α1=0.063, α2=0.063, α3=0, α4=0.1, α5=0.063, and α6=1. the amplitudeand phase-frequency response of this filter cell, produced under the presumption of use of infinite gain operational amplifiers, is depicted in fig. 2. note the usual spice [47] presentation of the phase which is presented as if the phasor is jumping for 180 degrees. fig. 2 amplitude (full line) and phase (doted) frequency response of the “ideal” filter 3. basic concepts of the obt under testing, within these proceedings, we will understand the creation of a fault dictionary. it is a look-up table containing the effect of every fault conceived in advance. by using it we practically implement the simulation before test approach [33]. the information stored in it tells the test engineer whether the selected fault is testable from both points of view: controllability and observability. the main problem hidden behind this table is the selection of a test signal that will activate and propagate the fault effect to the output in the shortest time (to reduce the overall testing in mass volume production). this problem is especially difficult to solve for analog circuits [48] since three domains are to be taken into account: dc, frequency and the time domain. there exists, however, a technique that needs no test signal. it is known as the obt [12, 20, 21]. the basic idea behind this powerful method is to create a redundant feedback loop that is to be activated during testing only. by measurement of the output signal of the fc and by comparison with the response of the ff circuit, one may conclude whether there are defects in the circuit or not. the simplicity of the method is deeper since usually only one testing point is needed (the output) and frequently only one quantity is to be observed: the oscillation frequency. when the ff circuit is set to oscillate, the fc may be revealed either by absence of oscillation or by a different value of the frequency of the signal measured at the output. oscillation-based testing method for detecting switch faults in high-q sc biquad filters 229 cut mode select fig. 3 simplified obt for the implementation of this method it is assumed that the system is so structured that an external controlling signal is capable of (1) isolating a part of it (being the cut) and (2) introducing positive feed-back that will make it oscillate. fig. 3 represents the local arrangement. as can be seen a switch is introduced that, under control of the ‟mode select‟ signal, when activated, simultaneously isolates the cut from the rest of the circuit and positive connects the feed-back branch. this concept allows for implementation of the design for testability (dft) concept of integrated circuits (ic) design which is depicted in fig. 4 in its simplified version [22, 43]. the development of the schematic proposed here is based on [49]. it is reminiscent of the one published in [50] where more details concerning the digital circuitry may be found. analog block 1 analog block 2 analog block n-1 analog block n additional circuitry amux control logic circuit under test (cut) inputs outputs output oscilations testing mode scan test signals test logic fig. 4 obt at the system level in this configuration additional digital control logic is provided in order to set the system in testing mode and to allow for the analog cuts to be isolated and tested one by one. since no test signal is needed, in testing mode, only the output of the cells is to be connected to the system output. note that every analog block is to be designed with a structure as depicted in fig. 3. when first reported the obt method was based on two fundamental presumptions: the active elements are ideal with infinite gain and consequently the system is linear. neither of these presumptions is valid. namely, the operational amplifiers which are necessary for implementation have real properties such as, among many others, finite and frequency dependent modulus of the gain and a phase shift that is different from zero and also frequency dependent. ignoring these properties leads to wrong expressions for calculation of the oscillation frequency and consequently wrong values for the outcome. unfortunately, the fact is that if the simplest, more realistic model of the oa was to be implemented (single pole roll-off) there would not be possible to get a closed form expressions due to the complexity of the node equations of the system. in fact, nonlinear expressions are obtained. 230 m. milić, v. litovski on the other side, there are no linear active circuits as such. furthermore, one is to be aware that if one designs an oscillator, one must draw the working point of the active element into saturation in order to limit the rise of the amplitude being forced by the positive feed-back. so, in part of the period, the circuit must be nonlinear. how long the active element will stay in saturation will depend on the quality of the feed-back loop, i.e. on the value of the modulus of the loop-gain. again, we come to the conclusion that no closed form expressions may be derived for calculation of the oscillation frequency. here we will allow ourselves to make a small digression. the fact that there are nonlinearities within the feedback loop does not disqualify the obt method as such. on the contrary! the abundance of harmonics in the output signal may be effectively used as additional information (besides the oscillation frequency) for both testing and diagnostic purposes [23, 24]. the use of harmonic analysis of the output signal (that may be done of-line) may drastically reduce the additional efforts, redesigns, and silicon area needed in order to get the supply current as additional information for testing what was done in [51]. to summarize, if the simulation with proper models of the active elements is presumed instead of closed form expressions, and if the problem of the additional circuitry needed to create positive feed-back loop is resolved, the obt method becomes a powerful means for testing and diagnosis of not only analog but also mixed-signal systems [20, 23, 24]. 4. simulations and testing the creation of the fault dictionary goes as follows. a list of faults is assembled first. it is normally shorter than the list of all possible faults for several reasons, one of them being the tractability of the testing process, while another is lower probability of occurrence of some specific faults. in these proceedings, as explained in the introduction we will consider the faults related to all transistors used as switches. two types of faults will be taken into account: stuck-at-open and stuck-at-closed. for the circuit of fig. 1 where 10 switches are used, one is to create a fault dictionary with 21 rows, the first one being allocated for the ff circuit. in the next step a fault is to be inserted in the circuit [52]. in our case we have to model an open-circuit (stuck-at-open fault) and a short-circuit. in the former case we use two variants. in the first we consider the open to be an infinite resistance (ideal open), while in the second we choose a more realistic model: the open has finite resistance of 1mω (representing the leakage between the source and the drain). similarly, for the modeling of the stuck-at-short we use a real short-circuit, i.e. zero ohms (ideal short) or the more realistic 0.01ω (representing a physical short circuit). note, to ensure numerical accuracy one is to use a relatively small span of the resistance values between the open and the closed case. in spice one uses 1 g and 1  as defaults. what we use is more realistic and less parted. accordingly, in the sequel we will present two fault dictionaries, one for ideal and the other for more realistic models of the faults. based on these, we will conclude whether we can rely on the ideal switch models or not. to get the oscillation frequency of the ff circuit it has to be extended by a positive feed-back loop. having in mind the value of the gain of the notch cell alone, we concluded that additional gain is to be added to the loop for the oscillations to be enabled. furthermore, the additional gain is to be positive and small enough to avoid excessive harmonic distortions. in fact, additional gain of 6 db was added to the loop-gain. the resulting configuration is depicted in fig. 5 where the schematic is copied from the schematic input to the spice simulator. oscillation-based testing method for detecting switch faults in high-q sc biquad filters 231 before proceeding to simulation we had to solve two additional issues. the first one is related to the choice of the integration rule for the differential equation solver within the simulator. namely, if one is to simulate an electronic circuit, one usually asks for an integration rule (or derivative approximation formula) that is stable and if possible a-stable. that however, as shown in [53], may lead to a signal with a decaying amplitude which eventually vanishes due to the stability requirement imposed. for that reason, for simulation of oscillator circuits, the so called trapezoidal integration rule [53] is to be implemented. finally, a realistic model of the operational amplifier is to be chosen and implemented. since no model (schematic neither) is normally given with the design kits delivered together with the technology file for ic design for the academic licenses we use, we were forced to use a model that is built in the simulator. that was the model of the ltc6078 [54] op-amp whose schematic is built into the ltspice simulator [47]. we published the schematic and the parameters of the model in [22]. all conditions set, after the simulation of the ff circuit, we obtained oscillation with frequency fosc= 960 hz. the fast fourier transform (fft) analysis results for the obtained output signal is shown in fig. 6. that is the information from which the oscillation frequency was extracted. in order to get the fault dictionary, as can be seen, for every fault we have to simulate the oscillator and to perform fft. here all together we needed 41 simulations and fft analyses. the results are given in table i and table ii. the first one uses ideal models of the faulty switches, while the second one uses more realistic models of the faulty switches. the test dictionaries expressed by table i and table ii contain the following data for the ff and for every fc: 1. oscillation frequency; 2. deviation (in percentage) of the oscillation frequency from the ff circuit; 3. and 4. the amplitude and the phase of the first harmonic; 5. the dc value of the output; and 6. the thd of the output signal. fig. 5 ltspice schematic of the notch filter 232 m. milić, v. litovski fig. 6 fft of the obt oscillator output signal we note, at the beginning, the difference between the notch and the oscillation frequency of the ff. for the idealized case it is 1 khz, while for the case when realistic models of the op-amps are implemented it becomes 960 hz. these, if ideal operational amplifiers were to be implemented, would be equal. one is not to forget that 1 khz is a very low frequency and this effect is to be expected to have much more severe consequences if the working frequency of the circuit is to be risen. we also expect that a higher gain in the additional circuit will be needed if oscillations at higher frequencies are to be created. as can be seen from the fosc column for both tables, oscillations are not established in all fcs. in cases where no oscillations are established, one simply concludes that the fault is testable. when however, the oscillations are established in the fc, we may distinguish three situations. in the first one, such as the cases s1-open, s5-open, and s7-short, in table i, there is clear difference in the oscillation frequency. that is enough to conclude that the fault is testable. in the second case, we may have oscillation with frequency near to the one of the ff but with a clearly different value of the amplitude of the first harmonic. this is practically always the case in table i and table ii. there is one case in table ii which deserves some additional attention. namely, when s2-short is present, if not satisfied, in order to get an absolutely firm conclusion about the presence of the fault, one may take into account not only the frequency (difference is 8.3%) and the amplitude of the first harmonic (difference is 29%), but the harmonic distortions, too. in all other cases there is no practical need for the use of the phase shift, the dc values and the distortions as an information about the testability of the circuit. there is a special situation where no sinusoidal oscillations are observed at the output. these are marked by 100k in the oscillation frequency column. instead, as a consequence of clock feed-trough, trapezoidal waveform, having the frequency of the clock, is obtained at the output. note that since such signal is far above the passband of the lowpass filter used at the output of the sc cell, if one wants to diagnose this effect, one is to measure directly at the sc output. in the opposite, the filter will suppress this fault effect. oscillation-based testing method for detecting switch faults in high-q sc biquad filters 233 table 1 simulation with ideal switch model – fault dictionary defect fosc [hz] δfosc [%] ampl. 1st. har. [mv] phase 1st. har. [deg] dc val. [mv] thd [%] comments ff 960 266.6 -125.45 -0.218 0.353 s1 open 360 62.5 139.6 -40.12 -0.073 1.161 s1 short 100k >500 0.216 80.62 -2999.87 209.071 no sin. osc. s2 open 100k >500 0.023 -117.67 -2999.91 171.753 no sin. osc. s2 short 1040 8.3 374.1 45.05 -1.147 0.914 s3 open 100k >500 0.091 -93.06 -2999.53 266.543 no sin. osc. s3 short 100 0. no oscillations s4 open 100k >500 0.018 -92.74 -2999.91 270.629 no sin. osc. s4 short 100k >500 59.52 -6.31 398.077 45.526 no sin. osc. s5 open 890 7.3 3.259 74.36 0.003 2.918 s5 short 100k >500 43.05 71.75 -16.101 109.583 no sin. osc. s6 open 890 7.3 20.76 81.64 -0.036 1.339 s6 short 100k >500 45.95 68.30 18.849 107.222 no sin. osc. s7 open 100 0. no oscillations s7 short 310 67.7 476.3 105.40 -12.934 134.391 s8 open 100k >500 0.033 -90.37 -2999.91 281.203 no sin. osc. s8 short 100k >500 0.051 -91.73 -2999.9 284.390 no sin. osc. s9 open 100k >500 0.092 -93.11 -2999.51 266.616 no sin. osc. s9 short 100k >500 0.155 -91.80 -2999.75 210.601 no sin. osc. s10 open 100k >500 0.008 -71.64 -2999.91 384.349 no sin. osc. s10 short 100k >500 0.430 -97.77 -2170.95 263.349 no sin. osc. table 2 simulation with real switch model – fault dictionary defect fosc [hz] δfosc [%] ampl. 1st. har. [mv] phase 1st. har. [deg] dc val. [mv] thd [%] comments ff 960 266.6 -125.45 -0.218 0.353 s1 open 727.3 24.2 52.67 -152.95 -0.195 0.541 s1 short 100k >500 0.291 82.61 -2999.84 221.73 no sin. osc. s2 open 670 30.2 6.073 7.47 0.078 1.386 s2 short 1028 7.1 374 133.07 1.966 1.754 s3 open 680 29.2 305.3 101.60 -0.509 0.29 s3 short 100 0 no oscillations s4 open 680 29.2 109.7 -166.00 -0.399 0.300 s4 short 100k >500 59.65 -6.35 398.039 45.352 no sin. osc. s5 open 930 3.1 120.2 47.64 -0.105 0.857 s5 short 100k >500 43.16 71.59 -16.221 109.513 no sin. osc. s6 open 930 3.1 95.39 45.16 -0.070 0.872 s6 short 100k >500 45.84 68.44 18.737 107.305 no sin. osc. s7 open 733 23.6 0.019 1.00 -0.007 4.535 s7 short 310 67.7 478.5 107.40 -12.276 133.594 s8 open 670 30.2 79.09 -158.37 -0.421 0.554 s8 short 100k >500 0.042 -91.93 -2999.9 273.155 no sin. osc. s9 open 680 29.2 318.3 22.08 -0.370 1.067 s9 short 100k >500 0.513 -92.00 -2998.75 227.005 no sin. osc. s10 open 680 29.2 258.1 -165.77 -0.063 1.139 s10 short 100k >500 0.421 -97.95 -2171.09 263.529 no sin. osc. 234 m. milić, v. litovski by comparison of table i and table ii we may get a notion on the quality of the model of the switch used. the main difference between table i and table ii is in the number of feed-trough fault effects. in addition, as can be seen for the case s7-open, the change of the circuit functionality due to the ideal model, leads to a wrong conclusion about the fault effects, while both models cover the fault. the realistic fault model is mostly suppressing this effect and this is why we do recommend it for this application. note its simplicity. by inspection of table i and table ii we may conclude that there are no untestable faults. the fault effects being different, all faults may be recognized at the output of the cell making obt a successful concept for testing this kind of cells while using an extremely simple additional circuitry for the synthesis of the oscillator circuit. we want to stress here again that only one testing point was used and only one measurement is undertaken the output voltage waveform was measured. the additional processing (fft) is unavoidable in order to get the oscillation frequency so that the numbers depicted in table i and table ii are obtained with no additional cost and effort. 5. conclusion implementation of the obt is a challenging issue. it comes from the fact that the method was originally proposed based on presumptions that the active elements exhibit ideal performances. that is not the case. in this proceeding we demonstrate the proper implementation of obt for the case of a second-order notch cell. this cell may be considered as the best representative (among other second order cells) for the task we undertook, since it is the most complicated and is the most frequently used one. it was synthesized to be implemented as an integrated circuit with switched capacitors. since the number and the nature of the possible faults if large we are attacking the problem in several phases, one of them being reported here. only catastrophic faults of the switches were modeled and corresponding fault dictionary was created. it was shown that full coverage of the selected faults may be achieved if proper modeling of the operational amplifiers is used and proper feed-back circuit is synthesized. the results reported here are parts of a project run for a longer period in which we started with continuous time analog filter cells and we are here ending with switched capacitor filter cell. acknowledgement. this research was partly funded by the ministry of education and science of republic of serbia under contract no. tr32004. references [1] m. soma, "automatic test generation algorithms for analogue circuits", iee proc. circuit, devices and systems, vol. 143, no. 6, december 1996, pp. 366-373. [2] c. dufaza and h. ihs, "a bist-dft technique for dc test of analog modules”, journal of electronic testingtheory and applications, vol. 9, no. 1-2, 1996, pp. 117-133. [3] m. marlett and j. abraham, "dc-iatp: an iterative analog circuit test generation program for generating dc single pattern tests", international test conference, 1988, pp. 839-845. [4] l. milor and v. viswanathan, "detection of catastrophic faults in analog integrated circuits", ieee transactions on computer aided design, vol. 8, 1989, pp 114-130. [5] m. slamani and b. kaminska, "multifrequency analysis of faults in analog circuits", ieee design & test of computers, vol. 12, no. 2, 1995, pp. 70-80. http://rd.springer.com/search?facet-author=%22christian+dufaza%22 http://rd.springer.com/search?facet-author=%22hassan+ihs%22 http://rd.springer.com/journal/10836 http://rd.springer.com/journal/10836 http://rd.springer.com/journal/10836/9/1/page/1 oscillation-based testing method for detecting switch faults in high-q sc biquad filters 235 [6] c. wang, y. yun, h. liang, j. he, m. chan, "multi-frequency test for analog circuits," electron devices and solid-state circuits (edssc), ieee international conference, june 2013, pp. 1, 2, 3-5. [7] s. huynh, s. kim, m. soma and j. zhang, "automatic analog test signal generation using multifrequency analysis", ieee transactions on circuits and systems—ii: analog and digital signal processing, vol. 46, no. 5, may 1999, 565-576. [8] b. burdiek, "generation of optimum test stimuli for nonlinear analog circuits using nonlinear programming and time-domain sensitivities," proc. of design, automation and test in europe, conference and exhibition, 2001, pp. 603-608. [9] z. guo and j. savir, "algorithm-based fault detection of analog linear time-invariant circuits", proc. of ieee instrumentation and measurement technology conference, budapest, hungary, may 2001, pp. 49-54. [10] s. cherubal and a. chatterjee, "parametric fault diagnosis for analog system using functional mapping", proc. of ieee date, nice, france, 1999, pp. 195-200. [11] v. prasannamoorthy and n. devarajan, "time domain technique for fault diagnosis of analog circuits with flexible accuracy algorithm", eur. journal of scientific research, vol. 51, no. 2, 2011, pp. 211-221. [12] k. arabi and b. kaminska, "oscillation-test strategy for analog and mixed-signal integrated circuits", proc. of the 14th ieee vlsi test symposium (vts‟96), princeton, new jersey, april/may 1996, pp. 476-482. [13] a. halder and a. chatterjee, "automated test generation and test point selection for specification test of analog circuits," proc. of 5th international symposium on quality electronic design, 2004, pp. 401-406. [14] g. hu, h. wang, m. hu and s. yang, "oscillation test strategy for analog filters by monitoring output voltage and supply current" thinghua science and technology, vol. 12, no. s1, 2007, pp. 78-82. [15] p. alli, testing a cmos operational amplifier circuit using a combination of oscillation and iddq test methods, m.sc. thesis, louisiana state university, usa, 2004. [16] m. wong and k. ko, "fault diagnostic improvement method for otm-based testing", proc. of 17th ieee instrumentation and measurement technology conf., 2000, baltimore, md, usa, pp. 1118 – 1123. [17] s. yellampalli, a. srivastava, and v. pulendra, "a combined oscillation, power supply current and iddq testing methodology for fault detection in floating gate input cmos operational amplifier", proc. of the 48th midwest symp. on circuits and systems, covington, ky, aug. 2005, pp. 503 506. [18] prasad, v.c.; babu, n.s.c., "selection of test nodes for analog fault diagnosis in dictionary approach", ieee transactions on instrumentation and measurement, vol. 49, no. 6, dec. 2000, pp. 1289-1297. [19] c. yang, s. tian, and b. long, "application of heuristic graph search to test-point selection for analog fault dictionary techniques", ieee trans. on instrumentation and measurement, vol. 58, no. 7, 2009, pp. 2145-2158. [20] k. arabi and b. kaminska, "efficient and accurate testing of analog-to-digital converters using oscillation-test method", proc. of the european design and test conference (ed&tc 97), paris, france, march 1997, pp. 384-352. [21] k. arabi and b. kaminska, “oscillation-test methodology for low-cost testing of active filters”, ieee trans. on instrumentation and measurements, vol. 48, no. 4, august 1999, pp 798-806. [22] m. milić, m. stošović and v. litovski, "oscillation based analog testing – a case study", in proceedings of the 34th international conference on information and communication technology, electronics and microelectronics mipro 2011, opatija, croatia, 2011, vol. 1, pp. 118-123. [23] m. stošović, m. milić and v. litovski, "analog filter diagnosis using the oscillation based method", journal of electrical engineering, issn 1335-3632, vol. 63, no. 6, 2012, pp. 349–356. [24] m. stošović, m. milić, m. zwolinski and v. litovski, "oscillation-based analog diagnosis using artificial neural networks based inference mechanism", computers and electrical engineering, vol. 39, 2013, pp. 190-201. [25] a. chaehoi, y. bertrand, l. latorre and p. nouet, "improving the efficiency of the oscillation-based test methodology for parametric faults", latw'03, 4th ieee latin american test workshop, natal, brazil, 2003. [26] a. raghunatan, h. shin and j. a. abraham, "prediction of analog performance parameters using oscillation based test", proc. 22nd ieee vlsi test symp., apr. 2004, pp. 377-382. [27] a. raghunatan, j. h. chun, j. a. abraham and a. chatterjee, "quasi-oscillation based test for improved prediction of analog performance parameters", proc. of the itc'04, international test conference 2004, pp. 252-261. [28] k. suenaga, e. isern, r. picos, s. bota, m. roca and e. garcía-moreno, "application of predictive oscillation-based test to a cmos opamp", ieee transactions on instrumentation and measurement vol. 59 , issue 8, 2010., pp. 2076-2082. [29] e. romero, m. costamagna, g. peretti and c. marques, "a performance evaluation of oscillation based test in continuous time filters", international journal of mechanical, industrial science and engineering vol. 8, no. 1, 2014, pp 196-201. https://www.researchgate.net/researcher/11902562_k_suenaga https://www.researchgate.net/researcher/7902034_e_isern https://www.researchgate.net/researcher/35260394_r_picos https://www.researchgate.net/researcher/11616821_s_bota https://www.researchgate.net/researcher/6100697_m_roca https://www.researchgate.net/researcher/8012611_e_garcia-moreno http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=5508591 236 m. milić, v. litovski [30] m. s. sankari. and p. sathish kumar, "oscillation test methodology for built-in analog circuits", international journal of computational engineering research, ijcer, vol. 2, issue no.3, 2012, pp. 868-877 [31] m. s. zarnik, f. novak and s. macek, "design of oscillation-based test structures of active rc filters. iee proceedings, circuits, devices and systems, 2000, vol. 147, no. 5, pp. 297–302. [32] m. wong, "on the issues of oscillation test methodology", ieee transactions on instrumentation and measurement, 2000, vol. 49, no. 2, pp. 240–245. [33] s. hurst, vlsi testing: digital and mixed analogue/digital techniques, institution of engineering and technology (iet), uk, 1999. [34] m. s. zarnik, f. novak and s. macek, "efficient go no-go test of active rc filters", international journal of circuit theory and applications, 1998, vol. 26, no. 5, pp. 523–529. [35] u. kač and f. novak, "all-pass sc biquad reconfiguration scheme for oscillation based analog bist", proc. of the 9th european test symposium, ajaccio, france, 2004, pp. 133-138. [36] u. kač and f. novak, "oscillation test scheme of sc biquad filters based on internal reconfiguration", journal of electron. test, vol. 23, no. 6, pp. 485-495, december 2007. [37] u. kač and f. novak, "reconfiguration schemes of sc biquad filters for oscillation based test", information technology and control, vol.42, no. 1, pp. 38-47, 2013. [38] g. huertas, d. vazquez, e. j. peralias, a. rueda and h. l. huertas, "practical oscillation-based test of integrated filters", ieee design & test of computers, vol. 19, no. 6, 2002, pp. 64-72. [39] k. martin and a. sedra, "effect of the opamp finite gain & bandwidth on the performance of switched-capacitor filters", ieee trans. circuits syst., vol. cas-28, no. 8, pp. 822-829, aug 1981. [40] j. náhlík, j. hospodka, p. sovka and b. pšenička, "implementation of a two-channel maximally decimated filter bank using switched capacitor circuits", radioengineering, vol. 22, no. 1, april 2013, pp. 167-173. [41] m. robson and g. russell, "a digital method for testing embedded switched capacitor filters", in proceedings of the conference on european design automation, euro – dac „96/ euro – vhdl ‟96, pp. 239–244. [42] m. milić and v. litovski, "soft defects testing in notch sc filters using the oscillation method", in proc. of the lvii etran conf., zlatibor, serbia, 2013, pp. el 2.3. [43] m. milić and v. litovski, "testing capacitors‟ hard defects in notch sc filters using the oscillation method", in proc. of the 5th small system simulation symposium, ssss 2014, niš, serbia, pp. 30-36. [44] p. e. allen and d. r. holberg, cmos analog circuit design, 2nd ed., oxford university press, new york, usa:, 2002. [45] f. h. ironns, active filters for integrated circuits applications, artech house, norwood, ma, usa, 2005. [46] p. e. fleischer, and k. r. laker, "a family of active switched capacitor biquad building blocks", bell system technical journal, no. 58, december 1979, pp. 2235-2269. [47] -, lt spice user manual, http://www.intactaudio.com/forum/viewtopic.php?t=596. [48] c. chalk, m. zwolinski, and b. r. wilkins, "test stimulus generation for steady-state analysis of analogue and mixed-signal circuits", proc. of the 3rd ieee international mixed signal testing workshop,1997, pp. 85-92. [49] p. kabisatpathy, a. barua and s. sinha, fault diagnosis of analog integrated circuits, springer, dordrecht, the nederland, 2005. [50] s. mosin, "a built-in self-test circuitry based on reconfiguration for analog and mixed-signal ic." information technology and control, 2011, vol. 40, no. 3, pp. 260-264. [51] g. hu, h. wang, m. hu and s. yang,, "oscillation test strategy for analog filters by monitoring output voltage and supply current," thinghua science and technology, vol. 12, no. si, july 2007, pp. 78-82. [52] b. kaminska, "analog and mixed signal test", in: eda for ic system design, verification, and testing, crc press, taylor&francis group, london, 2006. [53] litovski, v., zwolinski, m., "vlsi circuit simulation and optimization", chapman and hall, london, 1997. [54] -, linear ethnology, [55] http://www.linear.com/designtools/software/?gclid=ck_dzsaknl4cfqbmtaod2akarg#ltspice http://www.linear.com/designtools/software/?gclid=ck_dzsaknl4cfqbmtaod2akarg#ltspice facta universitatis series:electronics and energetics vol. 31, no 1, march 2018, pp. 89 100 https://doi.org/10.2298/fuee1801089a introducing a novel high-efficiency arc less heterounction dj solar cell  sobhan abasian 1,2 , reza sabbaghi-nadooshan 1 1 electrical engineering department, islamic azad university, central tehran branch, tehran, iran 2 ahvaz electricity distribution company, ahvaz, iran abstract. the present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aingap/gaasdual-junction solar cell. this goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. by observing mobility and lattice constant semiconductors (al0.52in0.48p, gaas and in0.49ga0.51p), it was concluded that the semiconductor al0.52in0.48p has high electron mobility and hole mobility and that the lattice constant matched to the gaas semiconductor can be effective in reducing recombination. the cathode current and absorbed photons show that the composition ingap/alinp increased the number of charge carriers in the top cell. the structure of ingap-alinp/gaas-alinp was obtained by inserting an ingap-alinp heterojunction at the top and gaas-alinp heterojunction at the bottom of aingap/gaas dual-junction cell. for this structure, short circuit current (jsc) = 22.96 ma/cm2, open circuit voltage (voc) = 2.72 v, fill factor (ff) = 93.26% and efficiency(η)= 58.28% were obtained under am1.5 (1 sun) of radiation. key words: solar cell, dual-junction, heterojunction, arc less 1. introduction the growing demand for energy and increasing environmental pollution have attracted attention of researchers and investors to the renewable energy sector. solar energy is a renewable resource that produces electricity through photovoltaic solar cells. much research has been conducted to increase the efficiency of solar cells by using iii-v compound semiconductors by increasing the number of p-n junctions for greater absorption of sunlight. hutchby et al. presented the first algaas/gaas dual-junction cell [1]. lueck et al. obtained an efficiency of 23.6% by placing the ingap/gaas dual-junction cell on gaas received march 30, 2017; received in revised form july 14, 2017 corresponding author: reza sabbaghi-nadooshan electrical engineering department, islamic azad university, central tehran branch, tehran, iran (e-mail: sobhan_aba@yahoo.com) 90 s. abasian, r. sabbaghi-nadooshan under radiation at am1.5 (1 sun) [2]. leem et al. designed aingap/gaas dual-junction cell with a ingap/ingap tunnel diode. the efficiency of this cell was 25.14% under radiation of am1.5 (1 sun) [3]. singh et al. obtained efficiency of 32.196% under radiation of am1.5 (1 sun) by inserting in0.5(al0.7 ga0.3)0.5 p into the back surface field (bsf) layer at the bottom of a ingap/gaas dual-junction cell [4]. nayak et al. reported a efficiency of 39.15% under radiation of am1.5 (1000 sun) by creating an extra electric field using two back surface field (bsf) layers [5]. abbasian et al. used semiconductors in 0.5(al0.7 ga0.3)0.5p at low irradiation and arrived at 53.51% efficiency under radiation of am1.5g (1 sun) [6]. the current study obtained a favorable structure for ingap-alinp/gaas-alinp dualjunction cells using heterojunctions. the performance of the proposed cell was simulated using the silvaco atlas under the standard am1.5 spectrum and the values obtained for efficiency(η), fill factor (ff), open circuit voltage (voc) and short circuit current (jsc) were compared with those from previous works. in the rest of the paper, section 2 describes the solar cell model. section 3 shows and discusses the results, and section 4 compares the results with other works. finally, section 5 concludes the paper. 2. modeling solar cells 2.1. structure of multi-junction cells in multi-junction cells, each cell consists of a window layer and p-n junction layer and back surface field (bsf) layer. cells that absorb wave length proportional to a semiconductor are used in the p-n junction and are connected by a tunnel junction. the window layer has a high band gap that allows photons to pass like a transparent substance and causes maximum absorption of sunlight. charge carriers produced by irradiation of photons are separated at the p-n junction and back surface field (bsf) layer, which reduces surface recombination of charge carriers by producing an electric field. the tunnel junction provides conditions for passage of the charge carriers from a route having low resistance by creating a low-width discharge area [4-8]. figure 1 shows a dual-junction solar cell. fig. 1 layers of dual-junction solar cell a high-efficiency arc less heterounction dj solar cell 91 2.2. selection of materials for heterojunction heterojunctions are used to apply the properties of different materials at a p-n junction. materials with a high bandwidth such as al0.52in0.48p and gaas were used to reduce the effect of recombination in the gaas emitter layer and to increase the open circuit voltage [9]. m.r. islam et al [10] showed that the combination of ingap/alinp increased the life time of the carriers, reduced recombination and increased the short circuit current. table 1 shows that the electron and hole mobility of al0.52in0.48p is suitable for combination with gaas and in0.49ga0.51p semiconductor. the lattice constant is an important parameter in combination with different semiconductors. table 1 shows that in0.5(al0.7ga0.3)0.5p, in0.49ga0.51p and al0.52in0.48p prevent trap levels in the structure with similar lattice constant. to increase the efficiency in the ingap/gaas dual-junction base cell [5], ingap/alinp and gaas/alinp heterojunctions were placed at the top and bottom of the cells, respectively. figure 2 shows the proposed structure to increase the efficiency of the ingap/gaas dual junction cell. as can be seen, the cell high-band gap the semiconductor selected the window layer to allow the light to pass through and prevent surface recombination. the p-n junction in the top cell absorbed the shorter wavelengths of the light spectrum and the bsf layers blocked the recombination of electrons and holes generated in the top cell. the top and bottom cells were connected by a gaas tunnel junction with a band gap of 1.4ev. the bottom cell absorbed long wavelengths of sunlight and cross charge carriers generated in the top cell increased efficiency in the dual-junction cell. table 1 major parameters for the ternary (al0.52in0.48p , in0.49ga0.51p) and quaternary in0.5(al0.7ga0.3)0.5p lattice matched to gaas materials used in this design [11-14]. alinp inalgap ingap gaas material 2.4 2.3 1.9 1.42 band gap eg (ev) @300 k 5.65 5.65 5.65 5.65 lattice constant α (å) 11.7 11.7 11.6 13.1 permittivity (es/eo) 4.2 4.2 4.16 4.07 affinity (ev) 2.65 2.85 3 0.063 heavy eeffective mass (me*/m0) 0.64 0. 64 0. 64 0.5 heavy h + effective mass (mh*/m0) 2291 2150 1945 8800 emobility mun (cm 2 /v× s) 142 141 141 400 h + mobility mup (cm 2 /v× s) 1.08e+20 1.20e+20 1.30e+20 4.7e+17 edensity of states nc (cm -3 ) 1.28e+19 1.28e+19 1.28e+19 7.0e+18 h + density of states nv (cm -3 ) 92 s. abasian, r. sabbaghi-nadooshan fig. 2 schematic of the proposed dual-junction cell 2.3. simulation model the performance of the proposed cell was simulated using atlas the silvaco atlas within the standard of am 1.5 (1 sun) spectrum and the results were compared with those from previous works. figure 3 shows the meshing of the proposed cell. the areas were partitioned differently to accurately simulate the structure of the solar cell. in this model, qtx.mesh and qty.mesh were used to calculate the quantum tunneling current. figure 4 shows the energy band diagram of a dual junction cell with bias voltage of 0v. fig. 3 generated mesh of the proposed dual-junction cell. a high-efficiency arc less heterounction dj solar cell 93 fig. 4. energy band diagram of the proposed model 3. discussion and results 3.1. thickness and optimal impurity for upper and lower cells p-n junction solar cell impurities in the emitter layer should be greater than in the base layer.the emitter layer is an absorbent layer in solar cells. to improve the performance of the solar cell, the thickness of this layer should be less than that of the base layer [15]. the thickness (emitter = 0.05, base = 0.55) (μm) and optimal impurity (emitter = 2×10 19 , base = 7×10 16 ) (1/cm 3 ) are shown in figures 5a and 5b for the ingap/alinpheterojunction. the thickness (emitter = 0.3, base = 3.0) (μm) and optimal impurity (emitter = 2×10 18 , base = 2×10 17 ) (1/cm 3 ) are shown in figures 6a and 6b for the gaas/alinpheterojunction. fig. 5 a) different solar cell parameters with various doping of new top cell, b) the different parameters obtained by varying the thickness of new top cell. 94 s. abasian, r. sabbaghi-nadooshan fig. 6 a) different solar cell parameters with various doping of new bottom cell, b) the different parameters obtained by varying the thickness of new bottom cell. 3.2 illumination with am1.5g figures 7 and 8 show the optical intensity in the base cell [5] and proposed cell. comparison of the optical intensity of the different layers indicates that the optical intensity of the proposed cell is less than that of the base cell due because of the increased absorption of photons in different layers. the value of the spectral response will determine solar cell gain and includes source photocurrent, available photocurrent and cathode current. fig. 7 optical intensity of different layers of the base model a high-efficiency arc less heterounction dj solar cell 95 fig. 8 optical intensity of different layers of the proposed model. source photocurrent is the amount of photons produced by the source photocurrent and available photocurrent. the cathode current measures photons absorbed in the solar cell and output current resulting from their absorption [15]. figure 9 shows the absorbed photons and cathode current for ingap and ingap/alinpcells and indicates that the amount of absorbed photons and cathode current in the ingap/alinp is greater. figure 10 shows the absorbed photons and cathode current in the gaas and gaas/alinp cells in which the amount of absorbed photons and cathode current in gaas/alinp is greater. fig. 9 generation of photocurrent by top cell of the base and proposed dual-junction cell 96 s. abasian, r. sabbaghi-nadooshan fig. 10 generation of photocurrent by bottom cell of the base and proposed dual-junction cell 3.3. photogeneration photogeneration shows amount of photons produced by sunlight in the different layers of a solar cell and is obtained as: (1) where g is photo-generation rate, 0 is the internal quantum efficiency, p is the cumulative effect of reflections, transmissions and losses due, ʎ is the wavelength, h is the plank’s constant, c is the light speed, α is the absorption coefficient for each set of (n,k) and y is the relative distance[4]. figures 11 and 12 show that photogeneration decreased from the top of the cell to the bottom due to the reduced absorption of photons in the lower layers. for example, in the base cell, photogeneration primarily occurring in the window layers at the top of the cell equaled 10 22 electrons and holes per cm 3 . this amount decreased to ~10 19 electrons and holes per cm 3 in the base layer at the bottom of the cell. figure 13 shows photogeneration in the base and proposed cells. comparison of the two cells indicates that photogeneration in the base layer at the tops and bottoms of the cells in the proposed model was caused by a reduction in the rate of recombination of electrons and holes produced and an increase in the absorption of photons after application of the inalp semiconductor. a high-efficiency arc less heterounction dj solar cell 97 fig. 11 photogeneration rate of the base model fig. 12 photogeneration rate of the proposed model 98 s. abasian, r. sabbaghi-nadooshan fig. 13 cutline view of photogeneration rate of the base and proposed model 3.4. important parameters in solar cells 3.4.1. short circuit current and open circuit voltage the total current in one solar cell is obtained as [4]: * ( ) + (2) where n is the diode in an ideal state, k is the boltzmann constant, t is the temperature (k), q is the electrical charge, il is the light generated current and i0 is the current in a dark state. the open circuit voltage is obtained as [4]: (3) 3.4.2. fill factor the fill factor shows the maximum output power to ideal power in a solar cell and is obtained using the i-v curve. this factor is expressed in percent and is calculated as [16]: (4) 3.4.3. efficiency the performance of a solar cell is determined by the efficiency and is obtained as [16]: η (5) v-i curve for the proposed model is illustrated in figure 14. a high-efficiency arc less heterounction dj solar cell 99 fig. 14 i-v curve of the base and proposed model 4. comparison of performance the parameters of short circuit current, open circuit voltage fill factor and efficiency of the optimized model of the proposed cell were compared with results of other models in table 2. in s. abbasian et al [6], semiconductor in0.5(al0.7ga0.3)0.5p decreased in the cells, which increased the electrical field. this resulted in fewer recombinations; thus, the use of heterojunction gaas/alinpcells on the bottom reduced the recombination of cells and increased efficiency. as seen, the use of heterojunction ingap/alinp at the top and gaas/alinp at the bottom of a dual junction cell increased its efficiency. table 2 comparison of proposed model with the different optimized ingap/gaas dj solar cell structures for spectrum am 1.5g solar cells spectrum sun voc(v) jsc (ma/cm 2 ) ff (%) (%) lueck et al [2] am1.5g 1.0 2.23 10.9 79.00 23.6 leem et al [3] am1.5g 1.0 2.30 10.7 87.55 25.14 singh&sarkar [4] am1.5g 1.0 2.39 16.1 87.52 32.196 nayak et al [5] am1.5g 1000 2.66 17.3 88.67 39.15 dutta et al [17] am1.5g 1000 2.668 18.2 88.29 40.879 sahoo et al [7] am1.5g 1000 2.7043 18.9 88.88 43.603 abbasian et al [6] am1.5g 1 3.347 17.5 90.90 53.51 this model am1.5g 1.0 2.72 22.9 93.26 58.28 100 s. abasian, r. sabbaghi-nadooshan 5. conclusion in this design, short circuit current, open circuit voltage and fill factor increased due to changing the structure and replacing the inalp semiconductor with band-gap of 2.4 ev in the base layer of the top and bottom cell of a gainp/gaasdual junction cell. the efficiency has been optimized by changing the thicknesses and the impurity density of the top and bottom layers. this optimized cell provides open circuit voltage (voc) = 2.72 v, short circuit current (jsc) = 22.96 ma/cm2, fill factor (ff) = 93.26% and efficiency ( ) = 58.28% under radiation (1 sun). references [1] j.a. hutchby, r j. markunas, s.m. bedair, "material aspects of the fabrication of multi junction solar cells", in proceedings of the 14th critical reviews of technology conference. arlington, 1985, pp. 40-61. [2] m.r. lueck, c.l. andre, a.j. pitera, m.l. lee, e.a. fitzgerald, s.a. ringel, "dual junction gainp/gaas solar cells grown on metamorphic sige/si substrates with high open circuit voltage", ieee electron device lett., vol. 27, pp. 142-144, 2006. [3] j.w. leem, y.t. lee, j.s. yu, "optimum design of ingap/gaas dual-junction solar cells with different tunnel diodes", opt. quantum electron., vol. 41, pp. 605-612, 2009. [4] k.j. singh, s.k. sarkar, "highly efficient arc less ingap/gaas dj solar cell numerical modeling using optimized inalgap bsf layers", opt. quantum electron., vol. 43, pp.1-21, 2009. [5] p.p. nayak, j.p. dutta, g.p. mishra, "efficient ingap/gaas dj solar cell with double back surface field layer", eng. sci. technol. int. j., vol.18, pp. 325-335, 2015. [6] s. abbasian, r. sabbaghi-nadooshan, "design and evaluation of arc less ingap/algainp dj solar cell", optik., vol. 136, pp. 487-496, 2017. [7] g.s. sahoo, p.p. nayak, g.p. mishra, "an arc less ingap/gaas dj solar cell with hetero tunnel junction", superlattices and microstructures, vol. 95, pp. 115-127, 2016. [8] f.s.gabibov, e.m. zobov, "effect of optical and thermal stimulation on gaas photosensitivity", inorganic materials, vol. 49, no. 8, pp. 754–757, 2013. [9] a.s. gudovskikh, k.s. zelentsov, n.a. kalyuzhnyy, v.m. lantratov, s.a. mintairov, "anisotype gaas based heterojunctions for iii-v multijunction solar cells", in proceedings of the 25th european photovoltaic solar energy conference and exhibition 2010. [10] m.r. islam, r.d. dupuis, a.l. holmes, a.p. curtis, n.f. gardner, g.e. stillman, j.e. baker, r. hull, "luminescence characteristics of ina1p-ingap heterostructures having native-oxide windows", journal of crystal growth, vol. 170, pp. 413-417, 1997. [11] i. vurgaftman, j.r. meyer, l.r. rammohan, "band parameters for iii-v compound semiconductors and their alloys". j. appl. phys., vol. 89, pp. 5815, 2001. [12] silvaco data systems inc, silvaco atlas user’s manual, 2010. [13] h.y. lee, c.t. lee, "the investigation for various treatments of inalgap schottky diodes",in proceedings of the 8th international conference on electronic materials, iumrs-icem 23, 2002, pp. 99-102. [14] p. michalopoulos, "a novel approach for the development and optimization of state-of-the-art photovoltaic devices using silvaco", naval postgraduate school monterey, california, 2002. [15] a. luque, s. hegedus, handbook of photovoltaic science and engineering, england, john wiley & sons ltd., 2003 , pp. 83-87. [16] s. m. sze, m. k. lee, .semiconductor devices physics and technology, wiley 2010 [17] j.p. dutta, p.p. nayak, g.p. mishra, "design and evaluation of arc less ingap/gaas dj solar cell with ingap tunnel junction and optimized double top bsf layer", optik., vol. 127, pp. 4156-4161, 2007. 12550 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 75 91 https://doi.org/10.2298/fuee2401075s © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper assessing the adoption and utilization of blockchain technology among software developers tatjana stojanović1, saša d. lazarević1, miloš radenković2, tamara naumović1, aleksa miletić1 1faculty of organizational sciences, university of belgrade, serbia 2school of computing, belgrade, serbia orcid ids: tatjana stojanović https://orcid.org/0000-0001-7191-6444 saša d. lazarević https://orcid.org/0000-0002-5588-4195 miloš radenković https://orcid.org/0000-0002-1708-9799 tamara naumović https://orcid.org/0000-0001-9849-7665 aleksa miletić https://orcid.org/0000-0001-8940-9897 abstract. this paper aims to assess factors affecting the adoption and utilization of blockchain technology among developers, extending and adapting the traditional technology acceptance model. blockchain technology has become increasingly popular in the last years, with the number of journal articles and posts on social media increasing, and many conferences being organized for sharing knowledge about blockchain, to the point where even news has started reporting about events in the blockchain world. but still, there remains the noticeable lag in the growth of blockchain developers relative to the technology’s recognition. the adapted technology acceptance model is used to determine how much factors such as perceived usefulness, social influence and personal engagement affect the intention of it professionals to use blockchain-based applications and finally to use blockchain for development (or to develop it). this research dissects behavioral intention and usage behavior into two distinct domains: application use and development engagement, providing a nuanced understanding of developer interactions with blockchain. results suggest that social influence positively affects both personal engagement and interest in blockchain technology and perceived usefulness. additionally, while perceived usefulness and personal engagement strongly motivate the use of blockchain-based application, they also have, but lesser impact on intention to use blockchain in development. the interest in using blockchain applications greatly influences the intention to develop blockchain technology. key words: technology acceptance model, blockchain-based application, blockchain development, blockchain received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: tatjana stojanović university of belgrade, faculty of organizational sciences, jove ilića 154, belgrade, serbia e-mail: tatjana.stojanovic@fon.bg.ac.rs https://orcid.org/0000-0001-7191-6444 https://orcid.org/0000-0002-5588-4195 https://orcid.org/0000-0002-1708-9799 https://orcid.org/0000-0001-9849-7665 https://orcid.org/0000-0001-8940-9897 mailto:tatjana.stojanovic@fon.bg.ac.rs 76 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić 1. introduction blockchain has become immensely popular, not only among it professionals, but also there are many people with no it experience, who have become blockchain enthusiasts. many blockchain applications, such as in cryptocurrencies, nfts, defi and smart contracts are becoming widely spread, but still its adoption is slow-going. regardless of its popularity in wider audience, many programmers and organizations are reluctant to adopt and use blockchain, whether that means using blockchain-based applications or blockchain in development. there are many barriers which decelerate adoption of this technology such as high energy consumption, scalability, regulatory issues, etc. apart from mentioned barriers, further expansion of blockchain technology and its growth can be slowed because of the lack of qualified developers, since number of developers and it experts who have competence and knowledge about blockchain haven’t gone along with its extensive influence through news and social media. this study seeks to identify the key factors driving the adoption and utilization of blockchain technology among it professionals. it aims to unravel what primarily motivates these professionals to engage with blockchain, not just through its diverse applications but also in its development, considering its widespread popularity and the vast potential for its use across various sectors. to determine variables, technology acceptance model (tam) was used, which was adapted for acceptance of blockchain technology among it professionals in general. the survey was conducted among it professionals, mainly developers, based on adapted tam model in order to determine factors which affect them to adopt and use blockchainbased applications and to use blockchain in development. besides perceived usefulness, the study introduced personal engagement as a variable, with social influence considered an external factor. behavioral intention and use behavior regarding blockchain technology were categorized into two distinct groups: use of blockchain-based applications and use of blockchain in development. this separation aimed to investigate whether and to what extent perceived social influence on blockchain technology impacts the intention and usage of blockchain in both areas, examining any potential effects one might have on the other and their interconnectedness. 1.1. blockchain technology blockchain represents a distributed database system which enables recording data in the form of a public ledger of transactions. the transactions need to be verified by nodes which are participating in a blockchain before they can be added to the ledger. [1] blockchain technology has been created to address the need for faster settlement, security, transparency, and immutability. it stores data in blocks, which are used as a container, where bct (blockchain technology) consists of chain of those blocks of transactions. blockchain network is a peer-to-peer, distributed network, where each peer contains a copy of the ledger. blocks are interconnected, where adding a new block must be validated by set of protocols and consensus of each participant, called node. bct was first used by satoshi nakamoto in 2008, as the foundation of bitcoin, and started rapidly gaining popularity ever since [2]. its main benefits include anonymity, immutability, and transparency. anonymity is achieved by assigning public keys to users, which are then used in transactions. every transaction can be traced by a public key, but the identity of the user behind that key is unknown. immutability is the benefit which is embedded in the design of the blockchain. each new generated block contains information from all the previous blocks in the chain, and each assessing the adoption and utilization of blockchain technology among software developers 77 node can verify if the new block is created correctly, so changing a single piece of information in already processed blocks is virtually impossible with contemporary processing power. this can, of course, be viewed as a disadvantage since any errors in transactions cannot be corrected. transparency means that in public blockchains all users can access and read the whole list of transactions that have occurred. in some domains, this can be seen as an issue, but it should be estimated if such systems are suitable for blockchain at all [3]. the initial version of blockchain was focused on transactions, as it was primarily used for deployment of cryptocurrencies, and is referred to as blockchain 1.0. utilization of bct in such systems allowed recording and processing of digital payments and transactions without the need for central entity or a middleman to govern the entire process. the expansion of the first version was focused mostly on privacy, smart contracts and nonnative asset token and abilities. this version is referred to as blockchain 2.0 and most notable platform to emerge is ethereum. blockchain 3.0 allowed creation of decentralized applications, which are implemented on decentralized blockchains using cryptographic tokens. blockchain 4.0 is the most recent version of blockchain which aims to incorporate ai capabilities in blockchain systems [4]. the important thing to note here is that an organization incorporating blockchain technology in the system doesn’t have to implement the versions in order of their appearance, nor does it have to implement all the versions. different systems have different needs, and the most important thing to consider is the value which is generated from the used technology. later stages of bct offer more possibilities but are more expensive and harder to implement. bct shouldn’t be introduced in the existing systems unless it is estimated that such implementation will bring concrete benefits [4]. 1.2. the adoption of blockchain in various domains and its challenges over the years, bct found many different domains which were suitable for its application, and which managed to utilize its benefits. according to [2] and [3] the domain which utilized these technologies the most is supply chain management, followed by education, finance, voting systems, internet of things, agriculture, etc. smart contracts are an important concept which allows blockchain technologies to broaden their use and to solve a wider array of problems. they are defined as a computer program that automatically executes the terms of the contract, which provides full confidence that both parties will fulfill their side of the agreement once certain conditions are met. smart contracts eliminate the need for middleman who will oversee the process and make sure that it is valid. despite many benefits, blockchain faces many problems such as the lack of standards and validation, interoperability, scalability, initial cost, energy consumption, security and privacy, lack of skill sets, etc. [5] the adoption of bct among it professionals is not yet widely prevalent. according to batubara et al. [6], trust and auditing are challenges that need to be considered while adopting blockchain applications and organizational readiness is an important factor in the adoption process. sadhya and sadhya [7] found 16 barriers to adoption of blockchain technology. they pointed out knowledge of blockchain as the most significant barrier, followed by regulatory issues, privacy and security, initial cost, lack of standards and trust. also, implementation problems such as implementation dilemma about interoperability with the legacy system, transaction scalability and high energy consumption [7]. lack of industry standards and mentioned technical limitation, and the relative novelty of the technology suggest immaturity of technology. in [8], besides mentioned problems, it 78 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić is mentioned that many organizations lack awareness of the potential of bct. organizational readiness, challenges related to changes in business processes and organizational culture, lack of leadership and vision are identified as key factors hindering the adoption of btc. in [2] it is stated that the most important factors which affect the use of blockchain are trust, perceived cost and social influence, while security and privacy risks, high energy and investment costs, organizational culture and lack of knowledge are seen as main risk of implementing such systems. it is also concluded that half of the people who participated in blockchain adoption research belong to the top management layer. one of the important factors which also influence adoption is significant social attention. it seems that sometimes the emphasis tends to be on the technology itself, rather than the value which the technology brings. blockchain technology can be rather problematic to implement or too expensive, especially in the smaller organizations. all the above implies that it is crucial to define an appropriate technology adoption path which is most suitable to the system at hand [4]. in [9] a blockchain adoption model is proposed, which is an extended technologyorganization-environment framework. they have identified six constructs relative advantage, observability, organizational age, external stakeholder pressure, regulatory uncertainty, and scope of business ecosystem, discussing that ecosystem readiness is the most important factor for the adoption of blockchain. in order to adopt blockchain, ecosystem should be: large enough, it should have at least one stakeholder which is pressuring other members to adopt blockchain and it should be capable of developing and enforcing regulations. in [10] model was extended with perceived trend construct. perceived trend refers to the perception of current and future popularity or acceptance of technology, showing that it has a positive effect for adoption of blockchain. a systematic review on blockchain adoption conducted by alshamsi et al. [11] identified technology acceptance model and technologyorganization-environment as the most used models. they have reported that existing studies at the time have examined the adoption of btc from the organizational point of view, with little attention paid to the individual level. na liu and zuoliang ye [12] explored the effects of blockchain technical features on user acceptance, which showed that users accept blockchain because they have increased understanding and approval for the characteristics of blockchain technology. trust was added as a construct that affects user acceptance which was proved to have an important effect on adoption of blockchain. pieters et al. [13] suggest that intrinsic motivation has an important role in the adoption of blockchain technology, while effort expectancy was not. unlike previous research that mainly looked at blockchain adoption from broader organizational or technological perspectives, this study delves into the individual motivations of it professionals, especially developers, focusing on personal motivations and the distinct differences between using and developing blockchain applications. by exploring personal engagement and the effects of age on adoption, our research brings novel insights into the individual factors influencing blockchain adoption among developers. 1.3. technology acceptance model in this study, model for determining factors influencing use and adoption of blockchain technologies is mainly based on technology acceptance model (tam), which has been adapted for determining acceptance of blockchain technologies among developers. the concept of technology acceptance model was proposed by davis in 1985 [14], which was revised in 1989 also by davis [15]. two main concepts are identified – perceived usefulness assessing the adoption and utilization of blockchain technology among software developers 79 and perceived ease of use. perceived usefulness is determined as a person’s belief whether it would enhance one’s job performance [15], while perceived ease of use is defined as belief that using the system is free of effort [15]. these two concepts were considered to have a direct influence on the attitude toward using, which led to actual system use. one of the main advantages of the tam model is that provides factors which lead to acceptance of technology, and it can be extended for a better fit of technology. the tam model has also been criticized for its simplicity and inability to fully explain the reason behind the acceptance and use of technology in the business environment, but its rather suitable for determining individual use and acceptance of technology [16]. also, it’s not applicable for determining use and acceptance through usefulness or ease of use. for example, usefulness of online gaming is not a factor, because it’s used for entertainment. also, organizations may be subscribed to platforms, complying employees to use that technology, which disputes influence of perceived ease of use. the tam has been applied to a wide range of technologies, including end-user computing technologies, mobile applications [17], digital payment systems [18], metaverse [19], etc. later, tam was modified, as it was found by davis in 1989 [15] that attitude did not fully mediate the perceived usefulness and ease of use, and behavioral intention was used as a new variable. it was suggested that there are cases where the system is perceived as useful, which would lead the individual to use the system without forming any attitude. additional changes included external variables influencing perceived usefulness and perceived ease of use into the model. venkatesh and davis proposed tam2 model [20], which is an extension of the previous model, including variables concerning social factors, that represent individual’s subjective perception about the importance of certain behavior, and cognitive instrumental influence, which relates to the individual’s day-to-day work [21]. voluntariness is a moderating factor defined as the extent to which users perceive that adoption decision is nonmandatory. additionally, experience and voluntariness were included as moderating factors of the subjective norm. image is defined as the degree to which adopting technology will enhance one’s image which will have positive effect on perceived usefulness. job relevance, a belief that the system is applicable to one’s job, output quality, how well the system performs its tasks and result demonstrability, to what extent are the outcomes and benefits of using the system are visible and easily understandable, will all have a positive effect on perceived usefulness. many extensions of the model occurred, leading to utaut and utaut2 model. the unified theory of acceptance and use of technology 2 (utaut2) model is a theoretical framework that aims to explain and predict individuals' acceptance and use of technology. it is an extension of the original utaut model and incorporates additional constructs to provide a more comprehensive understanding of technology adoption [21]. the utaut model considers four core constructs: performance expectancy, effort expectancy, social influence, and facilitating conditions [22]. performance expectancy refers to the degree to which individuals believe that using the technology will enhance their performance. effort expectancy relates to the perceived ease of use and the level of effort required using the technology. social influence captures the impact of social factors, such as subjective norms and social influence, on individuals' intention to use the technology. facilitating conditions refer to the availability of resources and support that enable technology use. the utaut2 extends the utaut model by adding three additional constructs: hedonic motivation, price value, and habit [21]. hedonic motivation refers to the pleasure or enjoyment individuals derive from using the technology. it recognizes that technology adoption is not solely driven by utilitarian factors but also by the desire for enjoyment and entertainment. price value 80 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić considers the perceived value or benefits individuals associate with the cost or price of using the technology. habit reflects the automatic and routine behaviors individuals develop through repeated use of technology. 2. extending tam to explore blockchain adoption as said before, tam has several main concepts: perceived usefulness, perceived ease of use and behavioral intention which led to use behavior. in this paper, tam model will be adapted and extended to address the unique characteristics and application of blockchain technology. new variable, personal engagement, is introduced in model due to the significant personal interest blockchain has garnered, highlighting the role of selfmotivation and personal interest in the technology. behavioral intention and use behavior are separated into two aspects – using blockchain applications and using blockchain in development offering nuanced view of user engagement and allowing a more detailed analysis of the factors influencing developers’ willingness to adopt blockchain. behavioral intention and behavioral use of blockchain-based applications and bi and bu for using blockchain for development should be separated and examined as different variables since the motivations, required user skills and knowledge and perceived usefulness are different for both aspects. still bi and bu of blockchain-based applications can be expected to have strong influence on bi and bu of blockchain in development since positive experience using the application can motivate users to explore and learn about the blockchain further. if users perceive blockchain-based applications as something useful and beneficial it can enhance their overall perception of blockchain technology. additionally, being active in blockchain community can lead to increased awareness of development tools and practices, influencing both the intention and use behavior related to blockchain development. perceived usefulness (pu) in terms of blockchain will be determined through perception of its applicability in various industries and whether participants believe that usage of blockchain is profitable for organizations due to its many benefits. since blockchain technology is a broad technology with many different applications in various industries, determining ease of use isn’t applicable in this context. in this study, intention is to determine both usage of blockchain applications and using blockchain in development which includes many different applications with very variable ease of use. following these conceptual elucidations, we propose two research hypotheses: h1: perceived usefulness will have a positive effect on intention to use blockchainbased applications. h2: perceived usefulness will have a positive effect on intention to use blockchain in development. another construct defined as a variable is personal engagement (pe). personal engagement will be defined as how much is an individual motivated to be informed and learn about blockchain due to personal interest and it will include its self-motivation for learning and being informed about important topics about blockchain. according to pan [23], learning motivation is contributing to students readiness, wilingness and intention to use technology for learning, which suggests interconnection between self-motivation for learning and technology acceptance, which is why is this variable constructed. personal engagement captures personal motives for engaging with technology. here, personal engagement includes whether the user is informed about fundamental concepts of blockchain, assessing the adoption and utilization of blockchain technology among software developers 81 regulatory issues and whether user has personal interest about this technology. based on this understanding of personal engagement, the following hypotheses are proposed: h3: personal engagement will have a positive effect on intention to use blockchainbased applications. h4: personal engagement will have a positive effect on intention to use blockchain in development. furthermore, the adoption of blockchain technology is influenced by factors such as the perceived social pressure (so called “hype”) around the technology, resistance to change, top management support, and trust among parties involved [24], which is why social influence (si) has been considered as external factor. social influence is used as an external factor due to the increasing number of articles about the blockchain on the news, social media, journals, conferences etc., which will help capture effects of immense popularity. social influence is defined as an external variable which affects perceived usefulness and personal engagement. social influence will be measured by determining whether participants feel peer pressure and do they perceive that to be knowledgeable about blockchain technology is a necessary skill for the future. accordingly, the following hypotheses are proposed: h5: increased peer pressure will have a positive effect on perceived usefulness. h6: increased peer pressure will have a positive effect on personal engagement. fig. 1 the adapted model for determining acceptance and use of blockchain among it professionals as said before, behavioral intention has been separated in two parts: intention to use blockchain-based applications in professional or personal purposes and behavioral intention to use blockchain technologies in development, including developing blockchain technology. for both constructs pu and pe have influence on both types of behavioral intention. perceived usefulness has been determined by six indicators, which include different aspects of usefulness. behavioral intention and use behavior have been separated on behavioral intention and use behavior for using blockchain-based applications, such as smart-contracts, identity verifications, cryptocurrency etc., while the other dependent 82 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić variables are used to determine behavior intention and use behavior for using blockchain in development. lastly, these additional hypotheses address aspects of behavioral intention in the use of blockchain technology: h7: behavioral intention to use blockchain-based applications will have a positive effect on behavioral intention to use blockchain in development. h8: behavioral intention to use blockchain-based applications will have a positive effect on actual usage of those applications. h9: behavioral intention to use blockchain for development will have a positive effect on actual usage of blockchain in development. the final adapted model for determining the acceptance and use of blockchain technology can be seen in fig. 1. 3. structural equation modeling of blockchain technology acceptance the survey is conducted among people working in it industry – developers and it professionals, through an online questionnaire. the questionnaire was distributed in october 2023 through multiple channels, including mailing lists of it developers, isaca members, and a crowdsourcing platform. total of 197 participants have filled in the questionnaire. data was analyzed using a method intended for an analysis of complex relationships of multivariate data, representing structural equation modeling. structural theory illustrates the relationships among latent variables, also referred to as constructs. constructs are variables that cannot be directly measured while indicators (or items) are the directly measured variables. links between indicators and constructs make the measurement (or outer) model and relationships between constructs make a structural (or outer) model. constructs are connected with single headed arrows, which define causal relationship. latent variable can be independent (exogenous), dependent or both independent and dependent (endogenous) variables. partial least squares sem is used to estimate equation model, it focuses on explaining the variance in the model’s dependent variables (chin et al., 2020) analysis has been done using smartpls 4.0. bootstrapped analysis has been performed on 10.000 subsamples. hair et al. offer suggestions and guidelines for reporting and interpreting results of sem method and suggest that pls-sem method works better for more complex theoretical frameworks where the main objective is the exploration of increased complexity [25]. smaller sample sizes are recommended, with the remark that characteristics of the population have a significant impact on the size of the sample. pls-sem is often used in studies relying on nonnormal data; however, this type of data alone is not sufficient enough to justify the use of pls-sem. this model offers great statistical power, which is particularly useful for identifying significant relationships. also, it is suggested that different approaches are needed for reflective and formative measurement models, but that for both models, the crucial step is assessing the structural model, as well as assessing the out-of-sample predictive power. for this purpose, it is recommended to use a novel approach called plspredict. and lastly, robustness checks should be conducted using appropriate methods. [25]. sem-pls analysis is usually used for analyzing tam and utaut models because it can handle complex models with multiple constructs, it is suitable for exploratory research and predictive studies, and it can be applied to smaller sample size, and it doesn’t require data to be normally distributed. assessing the adoption and utilization of blockchain technology among software developers 83 variable perceived usefulness (pu) of blockchain technology has several indicators: pu1: i believe that blockchain technology will enhance data security and reduce fraud. pu2: i strongly agree that adopting blockchain will lead to cost saving in the long run for it projects. pu3: i believe that implementing blockchain will lead to more transparent and verifiable transactions in it processes. pu4: i believe that using blockchain will improve the efficiency of it processes. variable personal engagement has three indicators: pe1: i am well-informed about data protection regulations related to blockchain, such as the gdpr’s implications for blockchain applications. pe2: i find it easy to understand the fundamental concepts of blockchain technology. pe3: i often find myself discussing or reading about blockchain in my free time due to genuine interest. additional construct, which has effect as an external variable has been defined as social influence. social norm has two indicators: si1: i think that not adopting or understanding blockchain technology might make me lag behind in the it community. si2: i feel that there’s a growing expectation in my professional circle for it experts to be knowledgeable about blockchain. indicators for variable behavioral intention to use blockchain-based applications are: biapp1: i intend to use blockchain-based applications (cryptocurrency, smartcontracts, identity verification etc.) in the near future. biapp2: given the opportunity, i would adopt using blockchain-based applications (cryptocurrency, smart-contracts, identity verification etc.) for relevant tasks. indicator for variable behavioral use of blockchain-based applications is: ubapp1: how frequently do you currently use blockchain-based applications in your professional tasks? indicator for variable behavioral use of blockchain in development: ubdev1: how frequently do you currently use blockchain for development? 4. results total number of participants is 197. most of the participants are in age group of 25-34 and 35-44 (table 1). participants are asked if they are familiar with the concept of blockchain (table 2). over 60% of participants are somewhat familiar with blockchain technology, while over 20% are very familiar. only around 15% of participants are not familiar with concepts of blockchain or have never heard of it. this shows that blockchain technology has become an unavoidable topic in the it community. 84 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić table 1 age of participants age frequency 25-34 91 35-44 40 45-54 16 55-64 7 65 and above 1 under 25 42 total 197 table 2 familiarity with the concept of blockchain of participants familiarity with the blockchain frequency heard of it but don't know much 29 never heard of it 1 somewhat familiar 122 very familiar 45 total 197 all participants are working in the it industry, where most of the participants are front-end, back-end or full-stack developers. table 3 area of expertise of participants frequency number of responses number of cases front-end development 42 11% 21% back-end development 67 17% 34% full-stack development 60 15% 30% data science & machine learning 45 12% 23% database administration 36 9% 18% devops 26 7% 13% qa & testing 24 6% 12% other 91 23% 46% sum 391 total of 14 indicators were used to build the constructs. all indicators were based on likert’s scale. as shown at table 1, all indicators have moderate to high variation in answers. lowest median value has use behavior for development and for blockchain-based applications, meaning that most of the participates don’t actually use blockchain in their professional or personal tasks, confirming problems with adoption of blockchain technology. based on the characteristics of pls-sem [25], it is evident that this analysis method can work effectively with smaller sample sizes, especially when dealing with models comprising numerous constructs and a large number of items. however, it's important to note that the acceptability of a smaller sample size in pls-sem analysis depends on the nature of the population being studied [25]. assessing the adoption and utilization of blockchain technology among software developers 85 table 4 mean, median and standard deviation of indicators indicator mean median standard deviation biapp1 2.990 3.000 1.290 biapp2 3.269 3.000 1.206 bidev1 2.741 3.000 1.302 budev1 1.812 1.000 1.052 pe1 2.807 3.000 1.244 pe2 3.579 4.000 1.013 pe3 2.863 3.000 1.289 pu1 3.893 4.000 1.029 pu2 3.152 3.000 1.148 pu3 3.980 4.000 0.923 pu4 3.538 4.000 1.078 si1 3.112 3.000 1.233 si2 3.091 3.000 1.227 ubapp1 1.772 1.000 1.044 sem-pls analysis indicator loadings determine absolute contribution of an indicator to the construct. as shown at table 5, all indicator loadings are above recommended 0.708 [25]. all indicator loadings are statistically significant, with high t-values. table 5 indicator loadings loadings t statistics p values biapp1 ← behavioral intention apps 0.936 91.051 0.000 biapp2 ← behavioral intention apps 0.936 95.788 0.000 bidev1 ← behavioral intention dev 1.000 n/a n/a budev ← use behavior dev 1.000 n/a n/a eou1 ← personal engagement 0.726 13.227 0.000 eou2 ← personal engagement 0.712 11.694 0.000 eou3 ← personal engagement 0.828 27.886 0.000 pu1 ← perceived usefulness 0.757 16.591 0.000 pu2 ← perceived usefulness 0.831 39.211 0.000 pu3 ← perceived usefulness 0.736 15.462 0.000 pu4 ← perceived usefulness 0.892 64.472 0.000 si2 ← social influence 0.873 35.149 0.000 si3 ← social influence 0.901 51.242 0.000 ubapp1 ← use behavior apps 1.000 n/a n/a cronbach’s alpha, composite reliability (rho_a) and composite reliability (rho_c) for all variables are above 0.7, except for personal engagement. for personal engagement, cronbach’s alpha is 0.634, rho_a is 0.663, while rho_c has value of 0.801 which is above recommended value. values of cronbach’s alpha and composite reliability are higher than 0.6 which can be acceptable. hence, the variable will be retained. average variance extracted (ave) explains how much of the variance of the constructs items is explained by that construct. for each construct ave should be at least 0.5. ave for all constructs is shown in table 2. 86 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić table 6 average variance extracted of variables ave behavioral intention apps 0.876 personal engagement 0.650 perceived usefulness 0.573 social influence 0.786 discriminant validity explains how much the constructs differ from each other and whether they measure different things. for determining discriminant validity heterotraitmonotrait ratio (htmt) is used. for each construct pair htmt should be below 0.9, which shows whether those constructs measure different aspects. for each construct pair htmt is below 0.815, which shows adequate discriminant between them. after assessing reflective measurement models, results of assessing formative measurement models will be shown. variance inflation factor (vif) is used for evaluation of collinearity of the formative indicators. as suggested in [25], vif values should be below 5, ideally close to 3 and lower. variance inflation factor for every indicator is below 3, which suggest there is no multicollinearity between indicators. table 7 outer weights of indicators outer weights p values biapp1 ← behavioral intention apps 0.535 0.000 biapp2 ← behavioral intention apps 0.533 0.000 bidev1 ← behavioral intention dev 1.000 n/a budev ← use behavior dev 1.000 n/a eou1 ← personal engagement 0.384 0.000 eou2 ← personal engagement 0.376 0.000 eou3 ← personal engagement 0.548 0.000 pu1 ← perceived usefulness 0.269 0.000 pu2 ← perceived usefulness 0.359 0.000 pu3 ← perceived usefulness 0.246 0.000 pu4 ← perceived usefulness 0.355 0.000 si2 ← social influence 0.531 0.000 si3 ← social influence 0.596 0.000 ubapp1 ← use behavior apps 1.000 n/a lastly, results of assessing structural models will be presented, using the coefficient of determination (r2). r2 represents the model’s explanatory power, which measures the variance and is explained by the constructs [26]. r2 is in-sample predictive power [27]. table 8 explained variance r2 p values behavioral intention apps 0.557 0.000 behavioral intention dev 0.628 0.000 perceived usefulness 0.455 0.000 personal engagement 0.185 0.000 use behavior apps 0.212 0.000 use behavior dev 0.477 0.000 assessing the adoption and utilization of blockchain technology among software developers 87 in this model, for behavioral intention to develop (using) blockchain 62.8% of variance is explained and 55.7% of variance for behavioral intention to use blockchain-based applications is explained, which can be considered moderate to high explanatory power. perceived usefulness and use behavior in development have, respectively, 45.5% and 47.7% of variance explained which is just below 50%, and can be considered moderate. personal engagement and use behavior for using blockchain-based applications have values of 21.2% and 18.5% which means that more factors could be affecting these values. stone-geisser’s q² is based on the blindfolding method. it combines out-of-sample and in sample explanatory power [17]. as recommended in [25], blindfolding is performed with 10 folds and 10 repetitions. for each indicator q2 is higher than 0, which means that this model has predictive power. when performing rmse, majority (7 of 12) has lower prediction error than naïve (linear regression model), which means that this model has a moderate prediction power. when performing mae only three of twelve indicators have performed better than naïve benchmark, meaning that model has low predictive power. table 9 predictive power (q2, rmse and mae) q²predict pls-sem_rmse pls-sem_mae lm_rmse lm_mae pu4 0.379 0.855 0.661 0.859 0.663 bidev1 0.378 1.031 0.850 1.014 0.815 pu2 0.361 0.922 0.759 0.922 0.754 biapp2 0.272 1.036 0.860 1.036 0.848 biapp1 0.244 1.129 0.948 1.135 0.945 budev 0.230 0.927 0.717 0.909 0.692 eou3 0.196 1.161 0.964 1.163 0.945 pu1 0.178 0.939 0.751 0.941 0.751 ubapp1 0.135 0.976 0.758 0.957 0.705 pu3 0.082 0.890 0.707 0.883 0.697 eou2 0.043 0.996 0.816 1.002 0.829 eou1 0.038 1.227 1.039 1.230 1.048 after assessing results from models, path coefficients will be analyzed. the highest path coefficients are behavioral intention to develop (using) blockchain on actual use of blockchain for development. as shown at table 10, perceived usefulness has more effect on behavioral intention to use blockchain-based application, while its effect on intention to develop blockchain technologies is not as strong. path coefficients and p-values for the model are seen in fig. 2, which shows the complete model, strength, and significance of each construct. social influence has a high effect on perceived usefulness and also on personal engagement. personal engagement is statistically significant but has low effect on both pu and bid. these effects don’t have practical implications, which are suggested by f2 values, which are not statistically significant. intention of using blockchain-based applications has effect on actual using those kind applications, but also influences intention to use blockchain in development. for other relationships, f2 values are statistically significant. based on presented results, all ten previously determined hypotheses are proven. 88 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić table 10 path coefficients path coefficient p values behavioral intention dev → use behavior dev 0.691 0.000 perceived usefulness → behavioral intention apps 0.658 0.000 social influence → perceived usefulness 0.536 0.000 behavioral intention apps → use behavior apps 0.461 0.000 behavioral intention apps → behavioral intention dev 0.439 0.000 social influence → personal engagement 0.430 0.000 perceived usefulness → behavioral intention dev 0.285 0.000 personal engagement → perceived usefulness 0.238 0.000 personal engagement → behavioral intention dev 0.189 0.000 fig. 2 results of sem-pls analysis additionally, influence of moderating variables is determined. age is used as moderating variable, to determine how significant age in adopting blockchain is. moderating variable is added to the model and connected to each relationship. lastly, analysis was run once more. as seen at table 11, moderating variable age has a statistically significant small to moderate negative effect on behavioral intention to use blockchain based application and to use blockchain for development, statistically significant moderate negative effect on use behavior of both aspects, while it doesn’t have a statistically significant effect on the perceived usefulness and personal engagement. it can be noticed that older age has a negative effect on intention to use as well as use behavior. also, age has a statistically significant moderating effect of moderate size on relationship between social influence and perceived usefulness, indicating that older individuals are more influenced by social factors in finding technology useful. age also has a strong negative and significant moderating effect on the relationship between the intention and actual use of blockchain technology, which weakens as age increases. assessing the adoption and utilization of blockchain technology among software developers 89 table 11 path effects of moderating variables original sample (o) sample mean (m) standard deviation (stdev) t statistics (|o/stdev|) p values age -> bia -0.099 -0.096 0.043 2.298 0.022 age -> bid -0.106 -0.103 0.044 2.413 0.016 age -> pu 0.06 0.059 0.056 1.069 0.285 age -> pe 0.056 0.054 0.055 1.02 0.308 age -> uba -0.161 -0.16 0.054 2.958 0.003 age -> ubd -0.16 -0.158 0.047 3.429 0.001 age x si -> pu 0.165 0.165 0.054 3.029 0.002 age x si -> pe 0.012 0.017 0.073 0.17 0.865 age x bid -> ubd -0.204 -0.203 0.048 4.292 0 age x bia -> bua -0.132 -0.131 0.059 2.216 0.027 s x pe -> bid -0.09 -0.084 0.078 1.145 0.252 age x pu -> bia 0.014 0.009 0.046 0.313 0.754 age x pu -> bid -0.074 -0.073 0.052 1.436 0.151 age x pe -> bia 0.018 0.023 0.052 0.354 0.723 age x pe -> bid -0.046 -0.046 0.051 0.918 0.359 5. concluding remarks blockchain technology is encountering many challenges in its adoption. many studies determined how technical, organizational, and environmental factors affect blockchain adoption. technical factors as maturity of the technology, scalability, and security concerns impact developers’ willingness to adopt blockchain. organizational factors, such as leaderships support, corporate culture and resource availability can greatly influence blockchain adoption within an organization. environmental factors, including regulatory clarity, market demand and industry standards are also determined to be important for developers’ intention to use blockchain. while numerous studies address what motivates employees to adopt blockchain or how is blockchain adopted in organization, in this study, it’s determined what influences developers as individuals to use blockchain. given the rising popularity of blockchainbased applications, especially among developers, this research separately observes their intentions and usage of blockchain in development, in order to determine the specific factors that drive developers towards adopting and using blockchain technology for development purposes. this distinction allows detailed analysis of the motivations, challenges, and expectations that developers have regarding blockchain technology. furthermore, this approach enables the investigation of how external factors such as social influence and technological complexity impact developers’ decisions to engage with blockchain technology, both in terms of developing new applications and integrating blockchain into existing solutions. these insights can be important to organizations for understanding the barriers to adoption, what is motivating developers to learn and adopt blockchain in their work, in order to support developers in overcoming these challenges. three main constructs are used to determine intention to use blockchain: perceived usefulness, social influence and personal engagement. among these variables, the ones which had the most significant impact on blockchain are social influence and perceived usefulness. perceived usefulness and personal engagement have a very strong and positive influence on 90 t. stojanovic, s. lazarevic, m. radenković, t. naumović, a. miletić behavioral intention to use blockchain-based applications and mild to moderate influence on intention to use blockchain in development. but the intention to use blockchain-based applications has a strong positive influence on intention to use blockchain in development. the practical implication of these findings is that it professionals’ perceived usefulness and intention and to use blockchain-based applications will encourage them to integrate blockchain technology into their development processes, especially if they perceive blockchain as useful and are motivated to learn about and engage with it. limitation of the study is relatively small number of participants. still, the model did capture how the perceived social pressure regarding blockchain, personal enthusiasm to learn and be engaged with the news about the blockchain affect behavioral intention to use blockchain applications and to use blockchain in development. however, it is possible to adapt the model so it can address how each of different aspects of these variables influences its adoption. in conclusion, it professionals and developers who believe that adopting blockchain technology is mandatory for future development perceive blockchain as more useful and are motivated to keep “up-to-date” with information about it. the vast potential for blockchain utilization and its capacity to enhance it processes, diverse use-cases, as well as being motivated to regularly be informed about development of blockchain have led to intention to use blockchain-based applications, which will motivate users to consider using blockchain in development. understanding factors which influences individual alongside with other factors (environmental, organizational etc.) can provide a more comprehensive perspective on the blockchain adoption landscape, highlighting the need for a holistic approach to address these challenges and support developers and organizations in addressing the complexities of blockchain adoption. references [1] c. komalavalli, deepika saxena, chetna laroiya, handbook of research on blockchain technology, 2020 chapter 14, overview of blockchain technology concepts, pp. 349-371. [2] m. al shamsi, m. al-emran, and k. shaalan, "a systematic review on blockchain adoption", appl. sci., vol. 12, no. 9, p. 4245, 2022. [3] trevor clohessy, blockchain adoption: technological, organisational and environmental considerations, springer, 2019. [4] jannis angelis, blockchain adoption: a value driver perspective, sciencedirect, 2018. [5] j. yli-huumo, d. ko, s. choi, s. park, k. smolander, "where is current research on blockchain technology?—a systematic review", plos. one, vol. 11, no. 10, p. e0163477, 2016. [6] f. batubara, j. ubacht, m. janssen, "challenges of blockchain technology adoption for e-government", proceedings of the 19th annual international conference on digital government research: governance in the data age, 2018. [7] v. sadhya, and h. sadhya, "barriers to adoption of blockchain technology", computer science, business, 2018. [8] a. čižmešija, n. vrcek, "organizational challenges of blockchain adoption: an exploratory literature review", in proceedings of ieee technology & engineering management conference europe (temscon-eur), may 2021. [9] m. lustenberger, f. spychiger, s. malesevic, "ecosystem readiness: blockchain adoption is driven externally", frontiers in blockchain, 4, p. 720454, 2021. [10] j. li, "blockchain technology adoption: examining the fundamental drivers" (accepted version, msie 2020) [preprint]. [11] m. alshamsi, m. al-emran, k. shaalan, "a systematic review on blockchain adoption", applied sciences, vol. 12, no. 9, p. 4245, 2022. assessing the adoption and utilization of blockchain technology among software developers 91 [12] na liu, ye zuoliang, "empirical research on the blockchain adoption – based on tam", applied economics, vol. 53, no. 37, pp. 4263-4275, 2021. [13] j. j. pieters, a. kokkinou, t. van kollenburg, "understanding blockchain technology adoption by nonexperts: an application of the unified theory of acceptance and use of technology (utaut)", oper. res. forum, vol. 3, no. 1, 2022. [14] f. d. davis, "a technology acceptance model for empirically testing new end-user information systems: theory and results", dissertation, 1985. [15] f. davis, "perceived usefulness, perceived ease of use, and user acceptance of information technology", mis quarterly, vol. 13, pp. 319-340, 1989. [16] p. ajibade, "technology acceptance model limitations and criticisms: exploring the practical applications and use in technology-related studies, mixed-method, and qualitative researches" dissertation, jul 2018. [17] y. c.huang, l. l. chang, c. p. yu, j. chen, "examining an extended technology acceptance model with experience construct on hotel consumers adoption of mobile applications", journal of hospitality marketing & management, vol. 28, no. 8, pp. 957-980, 2019. [18] m. najib and f. fahma, "investigating the adoption of digital payment system through an extended technology acceptance model: an insight from the indonesian small and medium enterprises", international journal on advanced science engineering and information technology, vol. 10, no. 4, p. 1702, 2020. [19] a.s. al-adwan, n. li, a. al-adwan, et al. "extending the technology acceptance model (tam) to predict university students’ intentions to use metaverse based learning platforms", educ. inf. technol., vol. 28, pp. 15381–15413, 2023. [20] v. venkatesh and f. davis, "a theoretical extension of the technology acceptance model: four longitudinal field studies", management science, vol. 46, no. 2, pp. 186-204, 2000. [21] v. venkatesh, j. thong, x. xu, "consumer acceptance and use of information technology: extending the unified theory of acceptance and use of technology", mis quarterly, vol. 36, no. 1, pp. 158-178, 2012. [22] v. venkatesh, m. morris, g. davis, f. davis, "user acceptance of information technology: toward a unified view", mis quarterly, vol. 27, no. 3, p. 425-478, 2003. [23] x. pan, "technology acceptance, technological self-efficacy, and attitude toward technology-based self-directed learning: learning motivation as a mediator", front psychol., vol. 11, 2020. [24] f. koster, h. borgman, "new kid on the block! understanding blockchain adoption in the public sector", in proceedings of hawaii international conference on system sciences, 2020. [25] j. f. hair, j. j. risher, m. sarstedt, and c. m. ringle, "when to use and how to report the results of plssem", european business review, vol. 31, no. 1, pp. 2-24, 2019. [26] g. shmueli and o. koppius, "predictive analytics in information systems research" ssrn electronic journal, vol. 35, no. 3, pp. 553-572, 2011. [27] e. e. rigdon, "rethinking partial least squares path modeling: in praise of simple methods", long range planning, vol. 45, no. 5–6, pp. 341–358, 2012. 10902 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 103-119 https://doi.org/10.2298/fuee2301103b © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design and implementation of digital controller in delta domain for buck converter arka biswas1, arindam mondal2, prasanta sarkar3 1department of aerospace engineering, iit kharagpur, west bengal, india 2department of electrical engineering, dr bc roy engineering college, durgapur, west bengal, india 3department of electrical engineering, nitttr kolkata, west bengal, india abstract. this paper presents the design and implementation of a discrete-time controller for a dc-dc buck converter in the complex delta domain. whenever any continuous-time system is sampled to get a corresponding discrete-time system with a very high sampling rate, the shift operator parameterized discrete-time system fails to provide meaningful information. there is another discrete-time operator called delta operator. in the delta operator parameterized discretetime system, the discrete-time results and continuous-time results can be obtained hand to hand, rather than in two special cases at a very high sampling rate. the superior property of the delta operator is capitalized in this paper to design the proposed controller in the discrete domain. the proportional plus integral (pi) controller designed in the delta domain is used to maintain the output voltage of the buck converter at the load end for varying load and varying supply voltage conditions. the controller is designed and implemented using the ds1202 dspace board. the output voltage of the buck converter is scaled to feed to the onboard analogue to digital converter of ds1202. under the different disturbances, the error between the desired output voltage and the actual output voltage is measured and the delta pi controller is used to manipulate the duty cycle of the converter. the duty cycle of this pulse width modulation (pwm) signal is generated using a ds1202 board and is applied to the gate of the metal oxide semiconductor field-effect transistor (mosfet) via a suitable driver such that the output voltage of the buck converter remains at its desired value. key words: buck converter, delta domain, digital controller, dspace board, pi controller 1. introduction the sources of conventional energy are decreasing day by day and the supply-demand gap is therefore increasing. this leads to a growing demand for non-conventional sources of energy. the output of most of the renewable sources is dc voltage and also, they are not stabilized. for the stabilization and conversion from one dc voltage level to another dc voltage level, one of the most important power-electronic circuits called the dc-dc converter, is used [1]. the maximum power point tracking is a very important area for received july 08, 2022; revised august 21, 2022; accepted september 01, 2022 corresponding author: arindam mondal department of electrical engineering, dr bc roy engineering college, durgapur, west bengal, india e-mail: arininstru@gmail.com 104 a. biswas, a. mondal, p. sarkar maximization of solar power and is done through an electronic circuit consisting of a dcdc converter [2]. there are two types of dc-dc converters available, one is the buck converter, and another is the boost converter. for the reduction of voltage level buck converter is used. the buck converter is widely used for the dc motor drive control [3], renewable systems [4], [5], [6] as it is one of the most interesting power electronics circuits which converts the uncontrollable dc input into controllable dc output. whenever the supply voltage varies or the load is changed, there is a possibility of changing the output voltage of the buck converter, thereby calling for a proper choice of controller [7]. in [8], robust adaptive control (rac) approach using system identification methodologies has been illustrated for controlling of buck converter by pwm (pulse width modulation) in the presence of input voltage as well as load variations. pid controllers are used for controlling the output voltage of the buck converter [9] for low-power applications such as powering led. as the buck converter itself is a nonlinear system, the control effects of the system on voltage can be improved through the use of fractional-order pid controllers [10]. in [11], rct digital robust control is used to overcome the instability issues caused by the negative resistance effect of constant power load. nonlinear least squares optimization methodbased digital controllers can be used for controlling the high-frequency buck converter [12]. through this approach, performance of the controller is optimized through the polezero-cancellation (pzc) technique and the adverse effects of the undesired poles on the buck converter power stage are drastically reduced. a derivative-free nelder–mead (n– m) simplex method for designing a digital controller for buck converter operating in high frequency is depicted in [13] for the improvement of rise-time and settling time. the proportional-integral (pi) controller gives zero steady-state error and the simplest of all the controllers is generally used in different dc-dc converters [14]. digital controllers are always better than analog controllers, therefore used for the controlling of dc-dc buck converter. by using the digital control strategy, the algorithm or program can be easily altered. the digital pid controller can improve the performance of the buck converter by varying loop gain, cross-over frequency and phase margin [15]. the control algorithm developed through the shift operator parameterization finds defects for highfrequency applications for buck converter [16]. digital controller design using the delta domain is better than the controller designed using the shift operator, particularly when the sampling rate is very high. the advantages and application of the delta operator in control theory are elaborated in [17], [18], and [19]. the delta operator has the diversified nature of giving results in the digital domain which is again equivalent to the continuous ‘s’ domain, basically at high frequency. the discrete ‘z’ transfer function approximation turns out to be very sensitive even if there is a slight change in the values of the coefficient but the transfer function in the digital delta domain, progresses significantly the robustness of the estimate to parameter changes [20]. in [21], the delta operator is used to reduce the order of the model of a system which helped to save some extra bits in a digital system. the superior property of the delta () operator is used in the case of fault detection and network control [22], for kalman filter-based controller design used in cyber-physical systems [23]. to check the packet losses in the sensor to controller link or controller to actuator link, the delta operator is successfully applied for lyapunov-krasovskii functional design in the field of limited communication [24]. a delta domain-based pi controller is designed [25] for indirect field-oriented control (ifoc) for controlling an induction motor and the superiority of delta parameterised discrete-time system is proved. at a very high sampling frequency, the continuous-time results are the obvious outcome from discrete-time design and implementation of digital controller in delta domain for buck converter 105 measurements. the selection of sampling frequency is very much important during discretization. the sampling frequency must be 10 times the maximum frequency of the system to suitably reproduce the signal. for the design of pi controller in discrete shift operator parameterization sampling rate cannot be made high as it becomes numerically ill at very high sampling limit, therefore, for high frequency digitally controlled switching converters, delta domain pi controllers are most suitable [26]. the pi controller instead of the pid controller is used in the case of certain types of work where the voltage has a smaller amount of ripple during load change from lower load to higher load. this will cause the drop of the output voltage to develop smaller than the essential size and the same goes for the opposite, therefore, only the pi controller is sufficient for regulatory the process to be stable. the regulatory process using the pi controller is satisfactory as well as it has wide use in industries since it got a simple structure and is cost-efficient as compared to pid controller [27], [28]. for more precise results, a fractional-order controller can also be used instead of the traditional integer-order controller using the discrete delta operator [29]. for finding the parameters of fractional order controller in delta domain alpha guided grey wolf optimization technique can be used [30]. the ds 1202 dspace board is one kind of surrounded system where the controller can be designed and simulated using the simulink and dspace block sets. the dspace has been successfully used for designing pid controllers for buck and boost converters [31], [32]. as the ds 1202 dspace board operates on the discrete-time platform, this can be used as a real-time controller for controlling the buck converter for getting the output at desired level irrespective of the load and supply voltage variation. the hardware implementation of the buck converter along with the controller formulated in the delta domain using ds 1202 dspace board has been presented in this paper. the realtime analyses as well as simulation results are obtained using matlab/simulink. the significant contributions made in this paper are as given below: in the earlier work, the digital controllers for buck converter have been designed using shift operator parameterization. the discrete-time systems so far designed are done using shift operator parameterization but shift operator parameterization fails to provide meaningful information at a high sampling rate. the real-time implementation of the controller in the digital domain needs a very high sampling rate to get a better result. this is the motivation to work on the implementation of a digital controller for buck converter using the delta operator parameterization. the most crucial part is that at a fast-sampling limit, the discrete domain results resemble that of the continuous-time results in the delta operator parameterized system. moreover, the discrete-time pi controller for buck converter, designed in the delta domain is implemented using the ds1202 dspace board which acts as the real-time controller with built-in adc having a much higher resolution than any other microcontrollers. by using the realized controller, the output of the dc-dc buck converter provides a stable desired output voltage. therefore, digital design and implementation of pi controller for buck converter using delta operator parameterization is a newer concept and a new direction for further research. this paper is organized in the following way. the basics of the buck converter are discussed in section 2. in section 3, the control algorithm based on delta-operator for dc-dc buck converter is described. the simulation and practical result analysis are illustrated in section 4. finally, section 5 is devoted to the conclusion. 106 a. biswas, a. mondal, p. sarkar 2. buck converter 2.1. topology the buck converter topology is used to step down the input voltage to a lower level. it consists of a power mosfet switch, a filter inductor l, a filter capacitor c, a freewheeling diode d and a resistive load rl. it operates either in continuous conduction mode or discontinuous conduction mode. figure 1(a) represents the present topology of the buck converter under consideration. 2.2. operation 2.2.1. mode 1 when the gate pulse is applied to the mosfet, current flows through l, c, and rl thus storing energy in the inductor. in this mode diode remains to reverse biased, the inductor current increases linearly and the load consumes energy from the source. fig. 1(b) shows the equivalent circuit for the model when the switch is on. the voltage and current equations during this mode are as follows: l di e l dt = (1) where el, is the inductor voltage. let the inductor current increases from i1 to i2, the kirchhoff’s voltage equation is written as 2 1 0dc on i i e e l t  − − =     (1) where edc is the supply voltage, e0 is the output voltage and ton is the on-time of the switch. peak to peak ripple current through the inductor l is defined as: 2 1i i i = − (2) equation (2) can be rewritten as 0dc on i e e l t  − = (3) 2.2.1. mode 2 when the switch is off, the energy stored previously in the inductor acts as a source and current flows through c, rl and d. in this mode, the diode is in forward biased and conducts. fig. 1(c) shows the equivalent circuit of mode 2 when the switch is off. during toff, the inductor current falls linearly from i2 to i1 and therefore the output voltage is expressed as 0 off i e l t  − = − (4) where toff, is the off-time of the switch. comparing i from (3) and (4) and rearranging the variables, (5) is obtained. design and implementation of digital controller in delta domain for buck converter 107 0 ( )off on dc one t t e t+ = (5) the time period is defined as on offt t t= + . therefore equation (5) can be rewritten as 0 dc one t e t= (6) defining the duty ratio /ont t as . the output equation can be expressed as 0 dce e= (7) fig. 1 (a) an ideal buck converter, (b) mode 1: switch on, (c) mode 2: switch off the buck converter design parameters and the values of the components are detailed in table 1 table 1 buck converter design parameter and values parameter with symbol value units input voltage (edc) 8 volt load resistance (rl) 100 kω load inductance (ll) 100 h series inductor (l) 100 h esr of inductor (rl) 10 mω output capacitor (c) 1000 f esr of capacitor (rc) 30 mω forward drop across diode (vd) 0.7 volt esr of diode when conducting (rd) 0.01 ω drain-source resistance of mosfet (rt) 8 mω operating frequency 5 khz 2.3. choice of sampling rate though the nyquist sampling theory recommends considering the sampling frequency as twice the maximum frequency contained in the signal. the thumb rule is that the minimum sampling frequency has to be 10 times the maximum frequency of the system. therefore, the sample time will be 1/10th of the time constant. the transfer function of a buck converter with vo(s) as the output voltage and d(s) being the duty cycle is given below, lcrc s s lc v sd sv sg in o buck 1)( )( )( 2 ++       == (8) 108 a. biswas, a. mondal, p. sarkar the sampling time is related to the time constant, therefore before the sampling time is decided; the time constant has been calculated first. considering the value of r and c are 100k and 1000uf respectively the time constant is coming out as 0.005 sec. according to the nyquist theorem, the sampling time can be taken as 0.0005 sec or less. for the controller design in the delta domain, the sampling rate is considered as 0.00001 sec to study the behavior of the controller at a high sampling rate as well as to establish the philosophy of the proposed controller design in the delta domain. 3. the control algorithm based on delta-operator for dc-dc buck converter 3.1. delta operator the d / dt operator in the continuous domain is well known for modelling any dynamic system. it is defined as ( ) ( ) 0 lim t h t h x xd dt h + → − = (9) the urge for an operator which resembles this d/dt operator structurally as well as functionally in the discrete domain led to the development of the delta-operator () which is defined as ( ) nn x x  + − =  (10) where  is the sampling time. it is an incremental difference operator that works as a signal differentiator unlike signal shifting as the case with the shift operator. this is a shifted and scaled version of the shift operator. it can be shown easily that the response of the delta-operator converges with the d/dt operator of continuous-time as the sampling time tends to zero (0). this property can be understood by comparing the stable zone of continuous, shift and deltaoperator in the frequency domain. in the frequency domain, the d/dt operator is expressed by the laplace operator s and the stable zone of this operator is widely known which is the entire left half side of the splane. in the frequency domain, the shift operator is denoted by z and related to the laplace operator s as sz e = (11) examining the positions of the poles, it is seen that the stable zone for the shift operator lies within a circle of radius 1 and the centre at the origin. in the frequency domain, the delta operator is defined as 1z  − =  (12) since it is a shifted and scaled version of the shift operator, the stable zone for the delta-operator is also get shifted and scaled. the stable zone of the delta operator lies in a circle of radius 1/ having the centre at (−1/, 0). fig.2 shows the stable zones of three domains. it can be observed that as the sampling time reduces, the stable zone of the delta-operator tends to converge with the stable zone of the continuous domain. thus, the design and implementation of digital controller in delta domain for buck converter 109 use of the delta-operator provides a unified approach to model, design, analyse, and implement the digital control scheme. fig. 2 (a) stability zone: s domain, (b) stability zone: z domain, (c) stability zone: -domain 3.2. the digital controller design based on delta-operator 3.2.1. pi controller design to control the dc-dc buck converter, a proportional and integral (pi) controller and a pwm generator are used. the pwm signal is required for the on/off operation of the mosfet of the buck converter. the pwm control technique is one of the popular control methods for any switching devices. in this experiment, the pwm signal is generated digitally to trigger the mosfet of the circuit. the duty cycle of the pwm signal is controlled using the pi controller. the proposed pi controller is designed in the discrete delta domain and is simulated using matlab/simulink before being implemented through the dspace. the mathematical equations for a pi controller in continuous, shift and delta domain are as follows: ( ) ( )i p k u s k e s s   = +    (13) ( ) ( ) 11 i p k u z k e z z −   = +  −  (14) since no γ-1 operator is available in matlab, z-1 module is used to represent the γ-1. the relation can be derived from equation (12) as: 1 1 1 1 − − − −  = z z  , therefore, ( ) ( ) 1 1 . . 1 i p k z u k e z   − −   = +  −  (15) where kp and ki are proportional gain and integral gain respectively. e is the error and u denotes the control signal. the representation of the γ-1in simulink is shown in fig. 3. 110 a. biswas, a. mondal, p. sarkar fig. 3 representation of γ-1 in matlab simulink the transfer function of the pi controller in  domain can be obtained from equation (14) by using equation (12). the simulations of the pi controller in the three stated domains are given in fig. 4. 3.2.2. ziegler-nichols approach for tuning of pi controller the ziegler-nichols approach for tuning industrial controllers is most well-known [33] and mostly favored by process control engineers in practice [34]. in this work, the ziegler-nichols approach is used to find out the pi controller parameters for buck converter in the continuous time domain. the integral gain (ki) of the controller is set to zero and proportional gain is slowly increased till a sustained oscillation is observed. the value of proportional gain (kp) for which sustained oscillation received is called critical gain and denoted by kc. the frequency of oscillations is measured and is called as critical frequency (fc). the values of kp and ki are tabulated as per the guidelines of ziegler & nicholos and given in table 2. table 2 setting of pi controller parameters using ziegler-nichols rule controller kp kp pi 0.45 kc 1.2 fc the value of kp and ki are optimised through the guidelines of ziegler-nichols’ chart. the optimised values of kp and ki obtained are 0.22 and 0.01 respectively. the continuous time transfer function of pi controller is given by (16). s sgpi 01.0 22.0)( += (16) corresponding  -domain transfer functions of the pi controller is expressed by (17) and the controller structure as given in (17) is realized using matlab/simulink and dspace board for the implementation of pi controller in the delta domain. 101.0005.022.0)( −++= pig (17) fig. 4 (a) pi controller in the continuous domain, (b) pi controller in the discrete z domain, (c) pi controller in the discrete  domain design and implementation of digital controller in delta domain for buck converter 111 3.2.3. mechanism for design of digital controller in delta domain the complete mechanism for the design of the proposed pi controller for buck converter in discrete delta domain is illustrated with a flowchart as shown in fig. 5. fig. 5 flowchart describing the complete mechanism of controller design in the delta domain 4. simulation and practical results fig. 6 shows the schematic diagram of the proposed work. fig. 6 schematic diagram of the proposed method 112 a. biswas, a. mondal, p. sarkar 4.1. simulation the experiment has been simulated first using matlab/simulink in sim electronics module. the simulation of closed-loop control of dc-dc buckconverter using continuous-time pi controller and pi controller in delta domain along with the dc-dc buck converter for r load has been depicted in fig. 7. fig. 7 simulink model for closed-loop control of dc-dc buck converter using (a) continuous time pi controller with r load, (b) delta domain pi controller with r load 4.2. hardware implementation in this work, the controller used for the control action is built with the dspace microlab board. in the year 2000, at bradley university, the dspace ds1102 was first used after developing the user’s manual and a workstation based on this board. after that, a newer dspace ds1103 board has been developed. in this experiment, the latest version of dspace ds1202 has been used. the design and simulation of the controller are done using the matlab simulink and the dspace block sets, the matlab-to-dsp interface libraries, real-time interface to simulink, and real-time workshop on a pc. the output from the ds1202 includes the pwm signal to trigger the gate of mosfet of the dc-dc buck converter. in this work, the dspace ds1202 system is used for the implementation of the control system; it is a mixed fpga/dsp digital controller consisting of a powerful processor for the computation of floating-point. the pci slot of the host computer is plugged with the key of ds1202. the control system is automatically processed and run in the ds1202 after being developed using matlab/simulink. a graphical user interface (gui) has been built using dspace. it allows the realtime evaluation of the control system. the “control desk” is used for multiple services. it has the provision for interfacing using which, the controller model that has been designed in simulink can be downloaded onto the dsp. various measurements viz., the regulated output (voltage and current), the duty cycle of the pwm signal and error to the controller can be displayed at the instrument panel feature of the control desk. the primary objective of using “ds1202” is as an interface between the external hardware portion of the overall system and the simulation. the ds1202 contains connectors for thirtytwo (32) analog-to-digital inputs and sixteen (16) digital-to-analog outputs; there are forty design and implementation of digital controller in delta domain for buck converter 113 eight (48) other connectors that can be used for digital i/o, slave/dsp i/o, incremental encoder interfaces, can interface and serial interfaces. the adc that is used for feedback the output voltage is of 16 bits, i.e., it represents the values between 0 to 65535. therefore, the resolution of adc is (8/65535) v =0.122 mv. now, the converter regulates the voltage to 4v which needs to be represented by 32765.5. but decimals cannot be represented due to the finite word length effect, so the reference voltage is represented by 32765. the adc resolution error using dspace is much less compared to the adc of 8 bit which is normally included in the microcontroller. the inherent error is 0.122/2 = 0.061 mv in the reference voltage. the adc resolution error can be small as 0.122 mv. the pwm generator used here, is an in-built pwm generator that takes the control input as the duty ratio and generates a pwm signal accordingly at a given frequency. the amplitude of the pwm signal can be varied over the range of 2.5 v, 3.5 v, and 5 v. fig. 8 shows the circuit implementation of buck converter and fig. 9 shows the simulated delta domain pi controller with dspace i/o blocks. fig. 8 the circuit implementation of the dc-dc buck converter fig. 9 discrete pi controller in the delta-domain with dspace rti blocks 114 a. biswas, a. mondal, p. sarkar 4.3. result analysis 4.3.1. simulation result fig. 10 shows the response of the continuous-time pi controller and the response of the pi controller using the delta domain with low and high sample rates. the resemblance of the response of the pi controller designed in the delta domain at a high sampling rate is also shown here. fig. 10 simulation result with 100 kω resistance (a) continuous domain pi controller response, (b) delta domain pi controller response with a sample rate of 0.5 sec, (c) delta domain pi controller response with a sample rate of 0.00001 sec fig. 11 shows the simulation result of the complete closed loop system under different load conditions. at first, the load is taken to be purely resistive and varied over the range of 100 ω to 100 kω. subsequently, a 100 h inductor is added to test the behaviour of the system under inductive load. in each case, the controller output remains at a steady desired output voltage of 4 v. design and implementation of digital controller in delta domain for buck converter 115 fig. 11 simulation of the system under different load conditions. (a) with 100 ω resistance, (b) with 100 kω resistance, (c) with r-l load consisting of 100 kω resistance and100 h inductor in each case, the current variation is shown with the variation of the load. the output voltage regulation of the buck converter with the load variation is thus depicted in terms of current variation in fig. 11. 116 a. biswas, a. mondal, p. sarkar 4.4. real-time experimental results fig. 12 shows the complete hardware setup with microlab dspace board, designed buck converter, cpu and dso. fig. 12 complete hardware setup with 4 volts as reference the load is varied over the ranges from 100 ω and 100 kω. with the variation of load resistances, the output of the buck converter is set at almost 4 v at its output which is the desired set point. the variation of the output with the changes in load resistances is depicted in figure 13. the output of the buck converter at a load resistance of 100 ω is shown in figure 13(a) whereas, figure 13(b) is used to illustrate the changes in output voltage with a load resistance of 100 kω. therefore, it is evident that the controller is successfully working for the output voltage regulation of the buck converter for load variation. (a) (b) fig. 13 regulation of output voltage for load resistance of (a) 100 ω (b) for 100 kω the system is also tested with the variation of source voltages keeping the set point fixed at 4 volt. in fig. 14, output voltage regulation for a variety of source voltages like 6v, 8 v and 20 v is depicted. it is observed that with the different input voltage levels, the output of the buck converter is stable at the desired set point which is 4.0 v in this experiment. thus, the controller is working efficiently to maintain its output level fixed even if there are any changes in the source voltages. design and implementation of digital controller in delta domain for buck converter 117 (a) (b) (c) fig. 14 regulation of output voltage with the variation of the source voltages of (a) 6 volt, (b) 8 volt, (c) 20 volt pwm signal with different duty cycles are generated through the dspace board and are shown in fig. 15. the pwm signal is varied with the changes of the reference voltages. (a) (b) fig. 15 pwm signal fed to the buck converter at (a) 75% duty cycle, (b) 50% duty cycle 5. conclusion the work in this paper deals with the development of the digital pi controller in the delta domain and its implementation in ds1202 dspace board for the dc-dc buck converter. the mathematical analysis, simulations and experiments are conducted using a pi-compensated buck converter. it is found that the performance of the chosen dc-dc buck converter is satisfactory under variation of supply voltage as well as load. the output voltage changes are only 0.25% when the load and supply voltage are varied as can be shown in fig. 11, fig. 13 and fig. 14 respectively. by varying the duty cycle of pwm using the designed controller in dspace, the output voltage is adjusted proportionately as shown in fig. 15. from the simulation result as given in fig. 10, it is found that the sampling time (δ) is reduced up to 0.00001sec and desired result is obtained which is again almost same as that of the output obtained by using the continuous-time controller. from this result, it is proved that at a fast sampling limit the delta parameterised system provides meaningful information. the mathematical derivations, simulations, and experiments performed in this paper conclude that the delta operator parameterized discrete-time controller’s exhibit certain numerical advantages and at a high sampling rate the results of the continuoustime controllers are almost same as the results obtained by using the controller designed in delta domain. this leads to the development of a unified approach for digital controller design for buck converter using the delta operator. 118 a. biswas, a. mondal, p. sarkar references [1] n. mohan, t. m. undeland, & w. p. robbins, power electronics: converters, applications, and design, john willey & sons, new york, 2002. [2] g. dileep & s. n. singh, "selection of non-isolated dc-dc converters for solar photo voltaic system", renewable sustainable energy review, vol. 76, pp. 1230-1247, 2017. [3] a. bhaumik, y. kumar, s. srivastava, & m. islam, 2016, "performance studies of a separately excited dc motor speed control fed by a buck converter using optimized piλdμ controller", in proceedings of the int. conf. circuit, power comput. technol. (iccpct), nagercoil, india, 2016. [4] m. hassanalieragh, t. soyata, a. nadeau, & g. sharma, "ur-solarcap: an open-source intelligent autowakeup solar energy harvesting system for supercapacitor-based energy buffering", ieee access, vol. 4, pp. 542-557, 2016. [5] q. xu, c. zhang, c. wen, & p. wang, "a novel composite nonlinear controller for stabilization of constant power load in dc microgrid, ieee trans. smart grid", vol.10, no. 1, pp. 752-761, 2010. [6] d. kumar, f. zare, & a. ghosh, "dc microgrid technology: system architectures, ac grid interfaces, grounding schemes, power quality, communication networks, applications, and standardizations aspects", ieee access, vol. 5, pp. 12230-12256, 2017. [7] liu qingpeng, research on buck converter based on linear feedback control [d], northeast petroleum university, 2012. [8] m. ghamari, h. mollaee, f. khavari, "robust self-tuning regressive adaptive controller design for a dc–dc buck converter", measurement, vol. 174, 109071, 2021. [9] c. deekshitha & k. latha shenoy, "design and simulation of synchronous buck converter for led application", in proceedings of the 2nd ieee international conference on recent trends in electronics information & communication technology, bangalore, india, 2017, pp. 142-146. [10] z. yichen, x. hejin & l. deming, "feedback control of fractional piλdμ for dc/dc buck converters", in proceedings of the international conference on industrial informatics -computing technology, intelligent technology, industrial information integration, wuhan, china, 2017, pp. 219-222. [11] a. m. abdurraqueeb, a. a. al-shamma’a, a. alkhuhyali, a. m. noman, k.e. addoweesh, "rst digital robust control for dc/dc buck converter feeding constant power load", mathematics, vol. 10, id. 1782, p. 15, 2022. [12] g. abbas, j. gu, u. farooq, m. irfan abid, a. raza, m. asad, v. e. balas and m. e. balas, "optimized digital controllers for switching-mode dc-dc step-down converter", electronics, vol. 7, no. 12, id. 412, p. 25, 2018. [13] g. abbas, m. nazeer, v. balas, t.-c. lin, m. balas, m. asad, a. raza, m. shehzad, u. farooq and j. gu, "derivative-free direct search optimization method for enhancing performance of analytical design approach-based digital controller for switching regulator", energies, vol. 12, no. 11, id. 2183, p. 18, 2019. [14] k. r. kumar & s. jeevananthan, "design of sliding mode control for negative output elementary super lift luo converter operated in continuous conduction mode", in proceedings of the communication control and computing technologies (icccct), ramanthapuram, india, 2010. pp. 138-148. [15] k. sharma & d. k. palwalia, 2017, "design of digital pid controller for voltage modecontrol of dc-dc converters", in proceedings of the international conference on microelectronic devices, circuits and systems (icmdcs), vellore, india, 2017. [16] l. h. guang, w. bo & l. g. you, 2005, "delta operator control and its robust control theory basis (m), national defence industry press, beijing. [17] r. h. middleton & g. c. goodwin, 1990, digital control and estimation-a unified approach, prentice-hall, englewood cliffs. new jersey. [18] r. h. middleton & g. c. goodwin, 1986, "improved finite wordlength characteristics in digital control using delta operators", ieee transactions on automatic control, vol. 31, no. 11, pp. 1015-1021. [19] j. cortes-romero, a. luviana-juarez & h. sira-ramirez, 2013, "a delta operator approach for the discretetime active disturbance rejection control on induction motors", mathematical problems in engineering, vol. 2013, id. 572026, p. 9, 2013. [20] g. maione, "high-speed digital realisation of fractional operators in delta domain", ieee transactions on automatic control, vol. 56, no. 3, pp. 697-702, 2011. [21] s. ganguli, g. kaur & p. sarkar, "a hybrid intelligent technique for model order reduction in the delta domain: a unified approach", springer nature, soft computing, vol. 23, pp. 4801-4814, 2018. [22] y. zhao & d. zhang, "h∞ fault detection for uncertain delta operator systems with packet dropout and limited communication", in proceedings of the american control conference, seattle, wa, usa, 2017, pp. 4772-4777. [23] j. gao, s. chai, m. shuai, b. zhang & l. cui, "detecting false data injection attack on cyber-physical system based on delta operator", in proceedings of the 37th chinese control conference, wuhan china, 2018. https://ieeexplore.ieee.org/xpl/conhome/8169966/proceeding https://ieeexplore.ieee.org/xpl/conhome/8169966/proceeding design and implementation of digital controller in delta domain for buck converter 119 [24] j. zhou, d. zhang, ieee access, multidisciplinary, vol. 7, id. 94448, 2019. [25] a. mondal, p. sarkar, a. hazra, "a unified approach for pi controller design in delta domain for indirect fieldoriented control of induction motor derive", journal of engineering research, vol. 8, no. 3, pp. 118-134, 2020. [26] b. l. eidson, 2010, an experimental evaluation of delta operator in digital control, auburn, alabama. [27] i. laoprom, s. tunyasrirut, "design of pi controller for voltage controller of four-phase interleaved boost converter using particle swarm optimization", journal of control science and engineering, id. 9515160, p. 13, 2020. [28] k. s. rao, r. mishra, "comparative study of p, pi and pid controller for speed control of vsi-fed induction motor", international journal of engineering development and research, vol. 2, no. 2, pp. 2740-2744, 2014. [29] l. a. quezada-téllez, l. franco-pérez, "guillermo fernandez-anaya, 2020, controlling chaos for a fractional-order discrete system", ieee open journal of circuit and systems, vol. 1, pp. 263-269, 2020. [30] p. hu, s. chen, h. huang, g. zhang, l. liu, "improved alpha-guided grey wolf optimizer", ieee access, vol. 7, pp. 5421-5437, 2018. [31] t. s. anandhi, k. muthukumar & s.p. natarajan, "dspace based implementation of pid controller for buck converter", in proceedings of the dspace user conference, 2012. [32] v. r, r. g, k. k. b & a. k. g, "dspace based 12/24v closed loop boost converter for low power applications", in proceedings of the international conference on computation of power, energy, information and communication, chennai, india, 2014, pp. 213-217. [33] ogata. k, modern control system, 1987, university of minnesota, prentice hall. [34] n pillai, p.a. govender, particle swarm optimization approach for model independent tuning of pid control loop, ieee africon, ieee catalog: 04ch37590c, 2007. https://ieeexplore.ieee.org/author/37088578546 https://ieeexplore.ieee.org/author/37088577841 https://ieeexplore.ieee.org/author/38273888200 instruction facta universitatis series: electronics and energetics vol. 33, no 2, june 2020, pp. 317-326 https://doi.org/10.2298/fuee2002317s © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd a single power supply 0.1-3.5 ghz low noise amplifier design using a low cost 0.5 µm d-mode phemt process * denis sotskov, vadim elesin, alexander kuznetsov, nikolay usachev, nikita zhidkov, alexander nikiforov 1national research nuclear university mephi (moscow engineering physics institute), moscow, russian federation 2specialized electronic systems, moscow, russian federation abstract. design and testing results of a single power supply wide-band low noise amplifier (lna) based on low cost 0.5 µm d-mode phemt process are presented. it is shown that the designed cascode lna has operating frequency range up to 3.5 ghz, power gain above 15 db, noise figure below 2.2 db, output linearity above 17 dbm and power consumption less than 325 mw. potential immunity of the lna to total ionizing dose and destructive single event effects exceed 300 krad and 60 mev·cm2/mg respectively. key words: low noise amplifier (lna), pseudo high-electron mobility transistor (phemt), cascode, radiation tolerance 1. introduction low noise amplifier (lna) is an important functional unit in receiver paths of communication, radar and navigation systems. lna parameters determine the sensitivity (noise figure), power gain and input linearity (p1db) of the receiver [1-3]. nowadays mass-produced lna ic’s are manufactured with iii-v and silicon based technologies using the following devices: gaas depletion (d-) or enhancement (e-) mode pseudo high-electron mobility transistor (phemt); gan high-electron mobility transistor (hemt); gaas and sige heterojunction bipolar transistors (hbt). d-mode phemt process has become a good choice for lna design because of transistor low noise figure, high cut-off frequency (ft) and appropriate fabrication costs [4]. in addition, low sensitivity of phemt to total ionizing dose (tid) and single event effects received september 26, 2019; received in revised form december 29, 2019 corresponding author: denis sotskov national research nuclear university mephi (moscow engineering physics institute); specialized electronic systems, moscow, russian federation e-mail: disot@spels.ru *an earlier version of this paper was presented at the 31st international conference on microelectronics (miel 2019), september 16-18, 2019, in niš, serbia [1].  318 d. sotskov, v. elesin, a. kuznetsov, n. usachev, n. zhidkov, a. nikiforov (see) makes them promising for space applications [5, 6]. а disadvantage of a d-mode phemt based lna is a negative bias supply requirement, which limits the possible field of applications [2, 7]. meanwhile, the conventional approach to single positive supply lna design on d-mode phemt is based on self-biasing [2]. the purpose of this work was design, manufacturing, and testing of lna with a single positive supply and 0.1-3.5 ghz operation frequency range using a low cost 0.5 µm d-mode phemt process [8]. 2. lna design wide-band (multi-octave) lna’s are designed using various architectures including distributed (traveling-wave), balanced and resistive feedback configurations [9]. the resistive feedback is widely used to achieve tradeoff among several lna performances (operated frequency range, noise figure, gain, gain flatness, linearity, vswr, power consumption) [9, 10]. among the possible configurations based on resistive feedback, cascode lna can provide not only flat gain and power over its operating band but also flat linearity in the same band and higher output impedance (better wide-band potential) [11]. therefore the single positive power supply cascode lna based on resistive feedback configuration and self-biasing techniques are presented in this work. lna was implemented in d-mode phemt 0.5 μm process with ft up to 35 ghz and minimum noise figure (nfmin) is 1.2 db at 8 ghz. the lna circuit schematic is shown in fig. 1. fig. 1 simplified circuit of the lna a single power supply 0.1-3.5 ghz low noise amplifier design 319 the amplifier is composed of cascoded input (vt2) and output (vt1) transistors with the same width of 4×150 µm. series feedback (resistor r3, capacitor c2, inductor l2) and parallel feedback (capacitor c1, resistor r1) are used to provide stability and gain flatness in a wide frequency range. it should be noted what cascode transistor with capacitance connected to the gate terminal forms a collpits oscillator. a damping resistor should be added to the gate of the cascode transistor to decrease parasitic resonator quality factor in order to improve amplifier stability [12]. lna is designed with a single positive voltage supply 5 v. resistor r2, resistive divider implemented by r4-r6 and self-bias circuit r3 provide required transistors operation point. the input matching network consists of integrated spiral inductors l1 and l2. the output matching network consists of capacitor c3 and resistor r5. circuit parameters optimization was carried out in a computer aided design (cad) tool using the technique presented in [13], which allows determining the operating current, the width of the transistors and parameters of the matching networks, providing optimal values of the gain, noise figure and return loss. the lna’s area is 2.15×1.65 mm2 and includes additional pad “c” needed to connect external bypass capacitors for enhanced performance at frequencies below 0.5 ghz. 3. lna performances 3.1. simulation and measurement setups simulation has been performed using scalable phemt non-linear model and linear models for microstrip lines, inductors, t-shapes, vias and pads based on scattering (s-) parameters measurement verified up to 20 ghz and provided by foundry [8]. measurements have been performed on the wafer for a significant amount (above 50) of lna chips using a specialized microwave test system, based on cascade semiautomated probe station, vector network analyzer (vna) and signal (spectrum) analyzer with noise figure measurement option described in [14]. the experimental setup used for lna dies testing is shown in fig. 2. according to the test procedure, s-parameters and p1db (linearity) are measured at 5 v supply, the noise figure is measured at 3 v supply. fig. 2 experimental setup based on the microwave probe station 320 d. sotskov, v. elesin, a. kuznetsov, n. usachev, n. zhidkov, a. nikiforov 3.2. simulation and measurement results the simulated and measured lna chip performances (gain, noise figure, p1db, etc.) are shown in fig. 3 and fig. 4. the measured and simulated results are in good agreement in the frequency range 0.5-3.5 ghz, and demonstrate that lna has power gain above 15.3 db, noise figure below 2.2 db, output p1db above 17 dbm (f = 1.5 ghz). fig. 3 simulated and measured lna gain and noise figure versus frequency fig. 4 simulated and measured lna gain and output power versus input power a single power supply 0.1-3.5 ghz low noise amplifier design 321 3.3. model accuracy estimation the simulation results relative error estimation was carried out with the following expression: δx = {|xm-xs|/xm}∙100%, (1) where xm and xs are the measured and simulated gain and noise figure values respectively. according with a small-signal analysis the relative gain error and the noise figure error do not exceed 3 % (frequency range 0.5-3.5 ghz) and 4 % (frequency range 1-3.5 ghz) respectively, that confirms phemt model accuracy. the relative input p1db error does not exceed 15 % (f = 1.5 ghz) for the worst case, the typical value is less than 5 %. 3.4. parameters variation estimation the coefficient of variation estimation was carried out with the following expression: vx { /x }∙100%, (2) where and x are a standard deviation and mean (average) values respectively. on wafer measurement results showed that the coefficient of variation does not exceed 1.3 % for gain (frequency range 0.5-3.5 ghz), 0.5 % for noise figure (frequency range 1-3.5 ghz) and 2.8 % for current consumption. 3.5. special measurement test-fixture special test-fixture based on ro4003c laminate has been designed and implemented to provide lna performance measurements especially under extreme temperature and ionizing radiation exposure. the special measurement test-fixture schematic and photograph are shown in fig. 5 and fig. 6 respectively. external capacitors c2 and c3 can be used to improve lna performance at frequencies below 0.5 ghz. fig. 5 special measurement test-fixture schematic 322 d. sotskov, v. elesin, a. kuznetsov, n. usachev, n. zhidkov, a. nikiforov fig. 6 special measurement test-fixture photograph 3.6. low-frequency applications measurement of low-frequency s-parameters and noise figure were performed at 5 v and 3v supply (vdd) respectively using special test-fixture (see fig. 5, 6) and microwave test system operating up to 26 ghz [14]. measured lna low-frequency performance with and without mounted 1 nf smd capacitors c2 and c3 are shown in fig. 7. dependencies in fig. 7 demonstrate that at frequency 100 mhz power gain and noise figure have been improved by more than 10 db and 5 db respectively. fig. 7 measured lna gain and noise figure versus frequency 3.7. parameters variation over temperature range the lna parameters measurement results in the ambient temperature range from -60 °c to +125 °c and frequency 1 ghz are shown in fig. 8 and fig. 9. the gain value monotonically decreases with increasing ambient temperature, the gain change does not a single power supply 0.1-3.5 ghz low noise amplifier design 323 exceed 2 db. the noise figure monotonically increases with increasing ambient temperature, the variation in the noise figure does not exceed 1.3 db. the output linearity (output p1db) monotonically decreases with increasing ambient temperature, the output p1db shift does not exceed 2 db in the temperature range. the current consumption change in the considered ambient temperature range does not exceed 3.8 ma. fig. 8 measured lna gain and noise figure at 1 ghz versus temperature fig. 9 measured lna output p1db at 1 ghz and current consumption versus temperature 324 d. sotskov, v. elesin, a. kuznetsov, n. usachev, n. zhidkov, a. nikiforov 3.8. radiation tolerance estimation a radiation tolerance estimation have been performed by spels / nrnu mephi test center for the typical test structures: transistor and c-band two-stage lna implemented in given d-mode phemt 0.5 µm process. the experimental research of the test structures under tid irradiation have been performed using cs-137 “panorama-mephi” irradiation facility [15, 16]. heavy ion irradiation have been performed at the facility based on u400m heavy-ion cyclotron of the joint institute for nuclear research (jinr, dubna, russia). according to the test results, up to an equivalent gamma dose of 300 krad, no parameter degradation of the test structures is observed. destructive see (sel, seb and other) have not been observed for heavy ions exposure with let up to 60 mev·cm2/mg. 3.9. performance summary the lna’s measured performance is summarized in table 1 compared to its commercially available analogues implemented in different processes (gaas phemt, gaas hbt, gan hemt, and sige hbt). table 1 lna’s performance summary lna this work tga5108 hmc395 qpl1002 sgl0622z company qorvo (triquint) analog dev. (hittite) qorvo qorvo (rfmd) process 0.5 µm gaas d-phemt 0.5 µm gaas e/d-phemt gaas hbt 0.25 µm gan hemt sige hbt configuration cascode cascode darlington cascode – operating frequency[ghz] 0.5 …3.5 0.5…3.5 0.5…3.5 0.5…3.5 0.5…3.5 gain [db] 15.3 15.0 14.3 16.1 18.7 gain flatness [db] 4 7 2 3 14 noise figure [db] 2.2 2.2 5.0 1.6 3.2 output p1db [dbm] (f = 1.5 ghz) 17 20 15 23 6 gain temperature coefficient [db/°c] -0.011 -0.011 -0.008 -0.022 -0.034 noise figure temperature coefficient [db/°c] 0.007 0.005 0.012 0.016 0.010 power consumption [mw] 325 425 270 600 36 chip size [mm2] 2.151.65 1.490.85 0.380.58 in package in package negative bias supply requirement no no no yes no fom [arbitrary unit] 0.60 0.66 0.14 1.55 0.08 in order to compare the presented lna’s, a figure of merit (fom) is introduced as a function of gain (g), gain flatness (δg), noise figure (nf), output p1db (op1db), gain temperature coefficient (δg), noise figure temperature coefficient (δnf), power consumption (pdc) and operating temperature range (δt): a single power supply 0.1-3.5 ghz low noise amplifier design 325 1db g t nf t 20 10 dc g op fom (nf 1) p g 10 10            , (3) where g, δg, nf are in arbitrary units; op1db and pdc are in mw; δg and δnf are in db/°c; δt 125 °c (-40 ‒ +85 °c). according to table 1, the presented single power supply lna implemented in 0.5 µm d-mode phemt process shows similar performance as compared with lna based on 0.5 µm gaas e/d-phemt and better noise figure, output p1db and fom compared with lna’s based on gaas and sige hbts. lna implemented in 0.25 µm gan hemt shows superior performance but required a negative bias supply. 4. conclusion the single power supply wide-band low noise amplifier design approach was considered with respect to the low cost 0.5 µm d-mode phemt process. it was demonstrated that the designed lna’s performance in the frequency range 0.5 3.5 ghz is not inferior to commercially available single power supply analogues implemented in more expensive gaas phemt, gaas hbt and sige hbt processes. it is also important to note, that this low cost process is equipped with a proper design kit (models accuracy, low process variations) and is also a good choice for lna’s and control circuits (switches, attenuators, phase shifters) radiation tolerant design for space applications, providing tid (total ionizing dose) and let (single event effects) up to 300 krad and 60 mev·cm2/mg respectively. acknowledgment: this work was supported in accordance with agreement between ministry of education and science of the russian federation and national research nuclear university mephi № 8.2373.2017/4.6. references [1] d.i. sotskov, n.a. usachev, v.v. elesin, a. g. kuznetsov, k.m. amburkin, g. v. chukov, m. i. titova, n. m. zidkov, "d-phemt 0.5 um process characterization to wide-band lna design", in proceedings of the 31th int. conf. on microelectronics (miel 2019), 2019, pp. 99–102. [2] g. gonzalez. microwave transistor amplifiers: analysis and design. 2nd ed. pearson. 1996. 528 p. [3] n. usachev, v. elesin, a. nikiforov, g. chukov, g. nazarova, d. sotskov, n. shelepin, v. dmitriev "system design considerations of universal uhf rfid reader transceiver ics", facta universitatis, series: electronics and energetics, vol. 28, no. 2, pp. 297–307, 2015. [4] g.d. vendelin, a.m. pavio, u.l. rohde. microwave circuit design using linear and nonlinear techniques. john wiley & sons ltd, 2005, 1058 p. [5] d.v. gromov, v.v. elesin, s.a. polevich, et al. "ionizing-radiation response of the gaas/(al, ga)as phemt: a comparison of gammaand x-ray results", russian microelectronics, vol. 33, no. 2, 2004, pp. 111–115. [6] g.v. chukov, v.v. elesin, g.n. nazarova, a.y. nikiforov, d.v. boychenko, v.a. telets, a.g. kuznetsov, k.m. amburkin, "see testing results for rf and microwave ics", in proceedings of the 2014 ieee radiation effects data workshop, 2014, pp. 233–235. [7] h.-c. chiu et al., "enhancementand depletion-mode ingap/ingaas phemts on 6-inch gaas substrate", in proceedings asia-pacific microwave conference, 2005, pp. 1–4. 326 d. sotskov, v. elesin, a. kuznetsov, n. usachev, n. zhidkov, a. nikiforov [8] o.r. fazylkhanov, i.s. pushnitsa, s.i. strelnikov, m.a. kalyakin, a.h. filaretov, "process design kit verification methodology and practice", 2017, crimico, pp. 143–149. [9] i.j. bahl. fundamentals of rf and microwave transistor amplifiers. john wiley & sons. 2009. 671 p. [10] g. wang, j. liu et al., "the design of broadband lna with active biasing based on negative technique", journal of microelectronics, electronic components and materials, vol. 48, no. 2, pp. 115– 120, 2018. [11] j.p. conlon, n. zhang, m.j. poulton et al., "gan wide band power integrated circuits", ieee compound semiconductor integrated circuit symposium (csic), 2006, pp. 85–88. [12] bagher afshar, ali m. niknejad. "x/ku band cmos lna design techniques", ieee custom integrated circuits conference, 2006, pp. 389–392. [13] g.n. nazarova, v.v. elesin, d.i. sotskov, “an approach to low noise amplifier optimization in advanced design system cad”, it security (russia), 2016, vol. 23, no. 3, pp. 53–59. [14] d.i. sotskov, v.v. elesin, k.m. amburkin, g.n. nazarova, n.a. usachev, a.y. nikiforov, "design and testing issues of a high-speed soi cmos dual-modulus prescaler for radiation tolerant frequency synthesizers", in proceedings of the 30th int. conf. on microelectronics (miel 2017), 2017, pp. 329– 332. [15] a.s. artamonov, a.a. sangalov, a.y. nikiforov, v.a. telets, d.v. boychenko, "the new gamma irradiation facility at the national research nuclear university mephi", in proceedings of the ieee radiation effects data workshop, 2014, pp. 258–261. [16] d. boychenko, o. kalashnikov, a. nikiforov, a. ulanova, d. bobrovsky, p. nekrasov. "total ionizing dose effects and radiation testing of complex multifunctional vlsi devices", facta univesitatis, series: electronics and energetics, vol. 28, no. 1, pp. 153–164, 2015. 12594 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 671 – 686 https://doi.org/10.2298/fuee2404671h © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals md mahmudul hasan1, md nahidul islam1, sayma khandaker1, norizam sulaiman1, ashraful islam2, mirza mahfuj hossain3 1faculty of electrical and electronics engineering technology, universiti malaysia pahang al-sultan abdullah, pahang 26600, malaysia 2department of electrical and electronic engineering, jashore university of science and technology, jashore 7408, bangladesh 3department of computer science and engineering, jashore university of science and technology, jashore 7408, bangladesh orcid ids: md mahmudul hasan https://orcid.org/0009-0004-6865-3785 md nahidul islam https://orcid.org/0000-0003-1552-0335 sayma khandaker https://orcid.org/0009-0007-7621-3554 norizam sulaiman https://orcid.org/0000-0002-0625-2327 ashraful islam https://orcid.org/0009-0006-1157-5055 mirza mahfuj hossain https://orcid.org/0009-0009-7391-5635 abstract. currently, there is a great extent of academic research focused on evaluating fatigue among drivers due to its growing recognition as a major contributor to vehicle tragedies. combining advanced features and machine learning techniques, signals from the electroencephalogram (eeg) can be analyzed to efficiently detect fatigue in the shortest possible time. this study presents an innovative approach to detect driver fatigue states utilizing ensemble-based machine learning techniques from eeg signals. two ensemble models (ensemble-based rusboosted decision trees and ensemblebased random subspace discriminant) were applied and compared. the study utilized an online eeg dataset of 12 individuals, with data collected during normal and fatigued driving conditions and fast fourier transform was applied for feature extraction. the ensemble-based rusboosted decision trees model achieved superior performance with 98.53% classification accuracy, compared to 83.13% for the random subspace discriminant model. multiple performance metrics were used for evaluation model performance. finally, the proposed ensemble-based rusboosted decision trees model outperformed ensemble-based random subspace discriminant model and existing conventional methods for fatigue state detection. this research contributes to the development of more accurate and reliable fatigue detection systems, which could potentially improve road safety by identifying fatigued drivers in real-time. received march 26, 2024; revised july 05, 2024; accepted july 18, 2024 corresponding author: norizam sulaiman faculty of electrical and electronics engineering technology, universiti malaysia pahang al-sultan abdullah, pahang 26600, malaysia e-mail: norizam@umpsa.edu.my https://orcid.org/0009-0004-6865-3785 https://orcid.org/0000-0003-1552-0335 https://orcid.org/0009-0007-7621-3554 https://orcid.org/0000-0002-0625-2327 https://orcid.org/0009-0006-1157-5055 https://orcid.org/0009-0009-7391-5635 672 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain key words: fatigue state detection, eeg signal, ensemble based classifier, rusboosted decision tree, random subspace discriminant 1. introduction the excessive frequency of highways catastrophes has led to socioeconomic problems that endanger both human beings and their belongings. the who mentions that road accidents cause more than 1,300,000 deaths worldwide each year, and millions additional individuals are injured or left permanently disabled [1]. furthermore, there has been a noticeable rise in the frequency of vehicle crashes lately, which has prompted communities and governments to give this problem a lot of emphasis [2]. road accidents are so prevalent that it is critical to focus resources on international projects that try mitigating them. studies previously conducted indicate that between twenty percent and thirty percent of vehicular crashes are caused by fatigued driving. consequently, this emphasizes how important it is that tired driving be considered a preliminary aspect in highway mishaps [2]. fatigued drivers are more likely to make careless mistakes, have trouble focusing, and have slower reaction times, all of which raise the risk of a collision between two vehicles [3]. however, due to adrenaline ability to conceal fatigue after an occurrence, people who were involved in accidents involving fatigue circumstances might not be aware of their pre-accident emotions or the momentary loss of awareness [4]. it is currently being worked on using three main methods to create a strong and effective fatigue recognition system. specifically, the operations in question can be broken down into three main categories: physical strategies, behavioral strategies, and vehicle strategies [5]. figure 1 offers a detailed summary of main elements used in the three principal approaches of fatigue systems for identification. initially, physical-based solutions involve utilizing external equipment connected to the driver's head, hands, chest, and fingers to gather numerous physiological data. the driver's situation can be assessed by examining different information, such as electrical neural activity, blood pressure, variation in heart rate, inhalation rates, body temperatures, pulmonary rates, and total heartbeats [6]. behavioral-based solutions utilize visual processing and automated vision methods to analyze pictures and videoclips monitored from the driver of the vehicle. this method involves analyzing key indicators displayed by the driver to determine their degree of alertness, tiredness, or drowsiness. extracting crucial insights depends on observing multiple factors such as absence of eyesight, napping via mouth motions, pupil closures, facial features, and head movement [7]. in final analysis, vehicle-based techniques are utilized to construct a built-in system for the goal of evaluating drivers' weariness. these methodologies make use of mechanisms and indications that are integrated within the vehicle's wheels of an automobile. the research employs computerized technology to assess driver behavior through the continuous monitoring of various factors including steering wheel angle, speed, hand activity, lane deviation, and position of the steering [8]. researchers have recently started using electroencephalography (eeg) to detect driving fatigue. the eeg has specific features that make it potentially useful for detecting driving fatigue. these factors consist of its ability to move, accuracy in timing, and exceptional sensitivity to the state of the nervous system. eeg is used as a diagnostic method for evaluating neuronal activities on the surface of the scalp to examine if the person is feeling fatigued [9]. however, using multiple-electrode methods to collect eeg data can be affected ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 673 by external factors. therefore, it is essential to extricate relevant information from mixed brain data to accurately detect weariness while operating a vehicle [10]. recordings from multiple eeg channels provide thorough information of neural events. particular channel may comprise extraneous and irrelevant information [11]. choosing the relevant channels is challenging to optimize the effectuality of models that depend on electroencephalography (eeg) [11]. developing a high-quality single classifier might be crucial as a consequence of the unpredictable nature of brain data and limited size of the training dataset. as a result, each classifier may show less than ideal performance or lack reliability. fig. 1 preliminary ways of fatigue detection this is why, this research study introduces a method of categorization for identifying driver fatigue in an eeg-based system, using ensemble learning methods. this initiative primarily aims to enhance the performance of identifying driver fatigue states while simultaneously decreasing computational intricacies. this study has investigated two ensemble-based machine learning models and proposed the best model in terms of detecting fatigue states utilizing eeg signals. the remainder of the article is organized as follows: a comprehensive literature review is provided in section 2. complete methodology of this study is explained in 674 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain section 3, which includes data description, fast fourier transformation, ensemble-based machine learning techniques and assessment of performance. a comprehensive experimental result is explained in section 4. this section 5 discusses the proposed model's comparison with related studies and the significant advantages of our proposed approach over the earlier studies. section 6 concludes the outcome of the presented study. 2. literature review diversified approaches have been put forth to determine the underlying mechanisms of fatigue via eeg data. in [12], a straightforward and efficient method for identifying drivers’ fatigue in real-time environments is presented. the suggested approach results in a 1.8-second latency and an identification rate of 92.7%. an advanced technique was created to detect fatigue among drivers by analyzing eeg data in [13]. the framework includes a characteristic synthesizing network which combines textural attributes and a combination of features selecting mechanism to enhance the identification efficiency. the suggested approach identified fatigue with 97.29% exactness using eeg data. zhao et al. [14] classified fatigue conditions in driving circumstances using a support vector machine (svm) using kpca, achieving a success rate of 81.64%. another experiment that was conducted with 43 good-health people and utilized bayesian neural networks as the classification model and autoregressive modeling as the technique for extracting features in order to identify fatigue, achieved an accuracy rate of 88.2% [15]. two studies that analyzed a model based on cnn and eeg recordings to find signs of exhaustion were 85.42% and 75.87% accurate, respectively [16 – 17]. a recent study utilized a single classifier decision tree to detect fatigue states from eeg signals, which gave an accuracy of 88.6% [18]. in the context of the real world, the main problem with these models is that they are not accurate to a great extent. a study assessed the effectiveness of numerous linear as well as nonlinear single classification methods, such as decision tree, fisher discriminant, support vector machine, k-nearest neighbors, neural network, and hidden markov model, in the detection of driver fatigue via electroencephalography signal [19]. fu et al. presented tiredness detection approach based on hidden markov model (hmm) [20]. some research has shown that ensemble-based classifiers outperform single classifiers [21 23]; minimal research has been done on using ensemble-based algorithms that utilize electroencephalogram (eeg) signals to detect weariness in vehicle drivers. hassan and bhuiyan [21] developed a technique that utilizes entire ensemble experimental mode decomposition in conjunction with adjustable noise and bootstrap combining (bagging) to structure sleep patterns from eeg signals. the study's results showed that the suggested methodology had more accuracy than current stateof-the-art procedures. moreover, an investigation was carried out in [22], presented an innovative approach for identifying seizures using linear programming boosting. their research results showed that this method functioned better than earlier attempts. chatterjee et al. [24] produced a method to classify myocardial infarct data by integrating support vector machines, naive bayes, and k-nearest neighbors algorithms. various collective learning models like loggitboost, adaboost, and bagging were used. however, the use of ensemble-based categorization for identifying fatigue stages through eeg signals is a relatively recent idea. ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 675 3. methodology this study introduces an innovative automated fatigue detection technique, highlighting the significance of roadway security and saving lives of those on the road. previous research studies have used different approaches to identify driver fatigue states. this study compared two ensemble-based classifiers, ensemble-based rusboosted decision trees and ensemblebased random subspace discriminant, for identifying fatigue conditions. during the course of our evaluation, we compared the performance of these models to that of other works that were already in existence. we found that the models that we suggested achieved a higher level of accuracy when it came to identifying fatigue states in drivers. the models can employ several tactics to achieve optimum efficiency in a short amount of time with minimal complexities. the study procedure is illustrated in figure 2. fig. 2 methodological representation of the current study technical computing and data analysis in the study were conducted using matlab r2021a, which was selected due to its outstanding effectiveness and reliability. the present study was conducted utilizing a pc equipped with an intel(r) core(tm) i7-8650u processor, 16 gb ram, and windows 11 os. 3.1. data description we used an online electroencephalogram (eeg) dataset with 12 individuals for our study [25], which is widely used for fatigue state detection studies. the dataset description is available in reference [26]. this data set was gathered in two separate stages. initially, in 1200 seconds driven event, the final 300 seconds of eeg signals were collected and identified as normal. furthermore, when participants drove continuously for 2400 to 6000 seconds, a questionnaire was used to evaluate their level of fatigue while driving. in addition, two measuring scales were also used [27 – 28]. the final 300 seconds of eeg waves were collected and recognized as representing levels of weariness. the data were fine-tuned relative to a1 and a2 mastoids that were electrically associated. the data was captured at 1000hz sampling rate using a 32-channels electrode device. the device contained activate of 30 channels and 2 channels as reference. after the eeg readings were gathered, neuroscan scan4.3 version software was employed to prepare the data [29]. the raw signals were filtered with a 50hz notch filter and a 0.15hz to 45hz bandpass filter that worked to get rid of noise. after that, the electroencephalogram (eeg) data that was collected from 32 electrodes for a period of five minutes was divided into epoch of each second, eventually a total of around 300 676 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain epochs. in a study with twelve individuals, the normal states produced 3600 datapoints, while exhausted states produced the same number of points. 3.2. fast fourier transformation the fast fourier transform (fft) is a computationally efficient algorithm used to compute the discrete fourier transform (dft). the algorithm decomposes the fourier transform of an order of n points into smaller complications, resulting in a decrease in computing difficulty. equation 1 demonstrates the computation of the discrete fourier transform (dft), where 𝑋𝑘 represents the fourier transform of a given discrete sequences 𝑥𝑛 with a length of 𝑛. 21 0 i knn n k n n x x e − − = =  (1) 3.3. ensemble-based classification techniques presently, ensemble methods and hybrid systems constitute a significant area of investigation within the domain of artificial intelligence. ensemble methods utilize many learning algorithms to improve performance [30]. furthermore, there have been proposals to use model trees that are regressive models structured in trees format. these methods link the leaves with different linear regression functions, allowing for the calculation of numerical values [31]. ensemble-based classification methods make it easier to combine the forecasting power of several different classifiers, like decision tree or ann. because they are unstable and can be computed quickly, decision trees are great for groups [32]. it is because decision trees are particularly change-sensitive in the input data that they become unstable. this can cause them to make completely different trees. using these things as a group helps to solve this problem. in ensemble learning, many classifiers are used. each one is given a weight, and then they are all put together to make a classifier that is better than the sum of its parts. the method is like the idea of wisdom of the crowd [33] because it takes into account which people are more likely to look for or think about different points of view before making big decisions. three methods are usually used to make ensemble-based decision trees: random subspace, boosting, and bagging, as explained within comparative inspection in [34]. a lot of people agree that boosting is the best way to choose model-guided cases. boosting is a common method for making a bad learner, like a decision tree, work better by changing the weights given to training cases repeatedly. the method involves running a weak learner on a lot of different types of scattered datasets for training. after that, one strong classifying framework was created to combine the classification models of the learners that weren't doing so well, making the system more accurate than any single tree could be. the adaboost algorithm, which is also called adaptive boosting, was first suggested in [35]. in order to improve the efficiency of the basic boosting method, it is a popular ensemble method for classifying binary data. this advancement can be achieved by a repetition technique that emphasizes identifying complex patterns. ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 677 3.3.1. ensemble-based rusboosted decision tree this method tries to get more accurate by using more than one model, which is more accurate than any one model alone. an ensemble inducer may include different conventional classification methods, and with various forms of conventional models. the study utilized decision trees as the basic learner and rusboost as the ensemble methodology. the current method utilizes the rusboosted technique along with decision trees to create a system called the ensemble-based rusboosted decision trees. the maximum quantity of clusters allowed in this applied system is 20. there are 30 learners with a learning rate of 0.1. rusboost is a kind of hybrid algorithm which merges boosting technique and under sampling. following the method outlined in [36], n subsets of the dataset are created, and the preliminary weight of the overall weight is divided by n at random to determine every subset. regularization is applied to update the weights after training the sub-dataset. an iterative process applies a classification for training which meets specified limitation on the subset of data. the optimal method is eventually chosen. fig. 3 architecture of ensemble-based rusboosted decision tree figure 3 illustrates the entire method. within the decision tree model, an initial design is chosen as the testing samples, and considering the pertinent characteristics is employed as inputs. the technique of ensemble-based rusboosted decision tree comprises routing every information set into the designated rusboost model. when rusboost technique is selected, a brand-new ensemble-based decision tree model is generated. the trees determined by rusboost are aggregated, and the class membership of testing samples are concluded utilizing majority vote. the identical training sample is again introduced into this ensemble while it is limited to many chosen rusboost inside the center area of adjoining decision tree. 678 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain 3.3.2. ensemble-based random subspace discriminant analysis the subspace methods are crucial, especially in the linear discriminant analysis (lda) framework, used to find a discriminant subspace with lower dimensions [37 – 39]. several studies have investigated how different sub-spacing, weighting, and resampling methods affect the classification performance in ensemble technique [40 – 42]. the random subspace approach to apply random subspace features configurations is utilized in [43]. each learner was built by randomly sampling features to decrease mistake rates [44]. one limitation of the random subspace technique is the random preference of qualities within subspace, that may result in insufficient discriminating ability in some cases. in this case, the overall group decision shows less than optimal performance. to address this constraint of the random subspace method, the majority voting (mv) methodology is utilized. typically, single classifier method in an ensemble uses solely a small attainable features subset in the features space. additionally, it is important to highlight that every classifier has the potential to categorize any newly acquired or unfamiliar example. the mv method utilizes distinct classifications for providing particular projections with relation to the class of a novel or unusual situation. the finalized classification of the instance is evaluated through a majority-vote relying on the prediction. the creation techniques of the ensemble-based random subspace technique entail utilizing an altered feature space to generate groups of learners. this sets them apart from the ensemble-based techniques of bagging and boosting [45]. typically, creating individual classifiers entails using a certain set of attributes. the classification models' output is combined utilizing the mv strategy in the proposed method. sorting unlabeled cases is done using the mv method. this method depends on an ensemble of classification model to identify classes that receive most votes for every occurrence. equations 2 and 3 depict the mathematical description of the mv. v i ( ) v class(a) arg max h(y (a),c ) ci dom y   =      (2) where h(yv(a), ci) denotes an indication expression, and yv(a) classifies the classifier "v," using the preceding equation of h: v i 1 y=c h(y (a),c ) 0 y c  =   (3) 3.4. assessment of performance several indicators, including model accuracy, sensitivity, specificity, precision, f1score, recall, and auc, mcc are utilized in order to evaluate the results for both models. the stats are listed as follows: 100% tp tn accuracy tp fn tn fp + =  + + + (4) 100% tp sensitivity tp fn =  + (5) ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 679 100% tn specificity tn fp =  + (6) 100% tp precision tp fp =  + (7) by providing a comprehensible measurement of the classification model’s capacity to significantly categorize the whole samples, the precision metric ensures that positive examples are correctly identified as positives and negative instances are correctly identified as negatives. tp recall tp fn = + (8) one way to evaluate the importance of recall is to consider the proportion of positive samples that are properly identified. 2 1 precision recall f score = precision recall   − + (9) the f1-score is an indicator which integrates precision and recall into one value, with a perfect score being one and the worst score being 0. the mcc being a statistic is frequently used in machine-learning to assess effectiveness of binary categorization activities [46]. the mcc is a quantitative measure which quantifies the strength and directions of the relationship between two variables. it runs from -1 to +1, indicating the degree of correlation within the elements [47]. ( )( )( )( ) tp tn fp fn mcc tp fp tp fn tn fp tn fn  −  = + + + + (10) where "tp", "tn", "fp", and "fn" express the abbreviations for true positive, true negative, false positive, and false negative, correspondingly. a statistical measure called cohen's kappa is used to assess how reliable or cooperative raters are while handling category items. when calculating the degree of agreement between two raters, cohen's kappa statistic accounts for the agreement that would result from pure chance. the level of assessment as determined by cohen's kappa is shown in table 1. table 1 evaluation criterion of cohen’s kappa cohen’s kappa value level of agreement ≤0 no agreement 0.01 – 0.20 none to slight 0.21 – 0.40 fair 0.41 – 0.60 moderate 0.61 – 0.80 substantial 0.81 – 1.00 almost perfect agreement 680 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain 4. experimental result the initial method used was to combine testing from all individuals to examine the effectiveness of the classification models. this study utilized two distinct neural conditions of the car drivers: fatigue and normal. mathematical numbers of 0 and 1 were assigned to indicate the normal states and fatigue states in the labelling procedure. the classifier's performance was determined using the k-folds cross-validation method. the parameter k is set to 5 in the k-fold cross-validation process in this experiment. the ensemble-based rusboosted decision trees has 98.53% classification accuracy, whereas the ensemblebased random subspace discriminant has 83.13% accuracy. fig. 4 comparisons between two classification models accuracy, sensitivity, specificity, and precision we evaluated the classifier's performance using various performance parameters in addition to analyzing its accuracy in classification. the study utilizes multiple performance evaluation metrics including accuracy, sensitivity, specificity, precision, recall, f1-score, mcc, and cohen's kappa. both classifiers' performing comparisons are depicted in figures 4 and 5, using different evaluation measures. fig. 5 comparisons between two classification models recall, f1-score, mcc, cohen’s kappa ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 681 meantime, scatter plots and parallel coordinate plots were utilized in order to assess the two models respective levels of performance. figures 6 and 7 are scatter plots that visually represent the identification of datapoints for both strategies. there are unique markers on the scatter plots that indicate scenarios of inaccurate detection of fatigue and normal states. scatter plots exhibit the detection datapoints. a very high level of accuracy may be inferred from the detection rates of both systems. in contrast, the identification efficacy of ensemble-based rusboosted decision trees demonstrates a considerable increase when compared with performance of the other model. fig. 6 scatter plots for ensemble-based rusboosted decision trees (a) normal, (b) fatigue, (c) both fig. 7 scatter plots for ensemble-based random subspace discriminant (a) normal, (b) fatigue, (c) both it is possible to observe two-dimensional patterns for both models by using parallel coordination plots that are illustrated in figure 8. this plot delivers as technique to graphically portray multi-dimensional data in a single plot. having this visual representation makes it easier to appreciate the linkages that exist between the various factors, and it also makes it easier to identify valuable predictors that can effectively differentiate between the various classes. training data and misclassified locations can both be shown in the parallel coordinates display. in the context of classification, dashed lines are used to depict points that were misclassified. there are more dashed lines in figure 8(b) than in figure 8(a). 682 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain fig. 8 parallel-coordination plots (a) ensemble-based rusboosted decision trees, (b) ensemble-based random subspace discriminant fig. 9 confusion matrix (a) ensemble-based rusboosted decision trees, (b) ensemblebased random subspace discriminant models when it came to forecasting fatigue states, ensemble-based rusboosted decision trees model outperformed another model. figure 9 represents the confusion matrix for both the applied models. there has been a small amount of trial misclassification in both instances. fig. 10 roc curve (a) ensemble-based rusboosted decision trees, (b) ensemblebased random subspace discriminant ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 683 the roc curves, or receiver operating characteristics is illustrated in figure 10, for two different ensemble-based decision-making models. the roc is one of the useful visual tools for showing the relationship between true-positive rate and false-positive rate at distinct classifying standards. this link is shown with sweeping variables that include various threshold ratios. a false-positive rate is the percentage of the negative occurrences which categorized wrongly as the positive, whereas true-positive rate is the percentage of positive occurrences which recognized accurately. when comparing the roc curves of both models, the latter is more closely aligned with the top-left corner. an evaluation statistic that measures the classifier's effectiveness in differentiating between positive and negative examples is auc. a classification model having an auc of 1 achieves perfect discrimination, whereas another having an auc of 0.5 shows performance at the chance level and makes random predictions. we get an auc of 0.99 for the ensemble-based rusboosted decision trees, and 0.90 for the ensemble-based random subspace discriminant. according to the results, when comparing the two methods, the ensemble based rusboosted decision tree appears to be more capable of accurately distinguishing between positive and negative scenarios. overall, the evaluations show that when it comes to detecting fatigue states from eeg signals, ensemble-based rusboosted decision trees can work better than the ensemble-based random subspace discriminant. 5. discussion the point of this study is to show how two new ensemble models can be used to find states of driver fatigue. in order to successfully achieve a classification accuracy of 98.53%, the ensemble-based rusboosted decision trees model is recommended to use related eeg studies. additionally, this research proposes one model, in comparison to other studies conducted in this area. using an electroencephalogram (eeg) signal, the proposed framework consists of the potentiality to offer a unique method for evaluating the degrees of normal or fatigue among the vehicle drivers. this might be accomplished through the utilization of the system. the effectiveness of the proposed model is examined in contrast to earlier research on the detection of fatigue, sleepiness, and tiredness. as shown in table 2, a number of research pieces have been conducted in order to determine the levels of fatigue experienced by drivers through the utilization of eeg data. in conclusion, it is readily apparent that the framework that we have proposed demonstrates a greater level of table 2 comparison of relevant studies concentrated on identifying fatigue states references class features classification model accuracy [48] 2 en knn 88.74% [49] 2 en svm 86% [50] 2 cn svm 94.40% [51] 2 fd nn 88.20% [52] 3 fd svm 81.60% [53] 2 en svm 97% [54] 2 fd and en nn 98.30% [55] 2 fd sdbn 90.60% our proposed method 2 fd (fast fourier transformation) ensemble-based rusboosted decision tree 98.53% 684 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain classification efficiency in comparison to currently existing conventional methods for identifying stages of fatigue among vehicle drivers. 6. conclusion as a result of the fact that driver’s fatigue is a crucial issue in crash prevention due to its significant contribution to a high number of accidents and fatalities each year. in addition to a wide variety of subjective and objective detection methods, it has been determined that the use of driver physiological measures, more especially electroencephalography (eeg), is a reliable method for determining the levels of alertness or weariness that drivers are experiencing. this study indicates that it is possible to discern between states of weariness and alertness by analyzing eeg signal whilst engaging throughout a virtual driving exercise. following the execution of two ensemble-based classifiers, the feature collection procedure included the use of fast fourier transform (fft). an improved level of classification accuracy, precisely 98.53%, is shown by the final suggested method. the findings from experiments indicate that ensemble-based rusboosted decision trees possess the ability to significantly enhance the identification of driver fatigue states using eeg signals. for our upcoming research, we plan to develop a real-time feedback system by utilizing ensemble based machine learning technique. acknowledgement: the authors are grateful to the faculty of electrical and electronics engineering technology at universiti malaysia pahang al-sultan abdullah for their cooperation in providing the necessary resources (research grant, pdu233212) and access to the labs for the purpose of this research. references [1] who, "global status report on road safety : time for action", who press. accessed: may 01, 2024. [online]. available: https://www.who.int/news-room/fact-sheets/detail/road-traffic-injuries [2] l. chen et al., "driver fatigue detection via differential evolution extreme learning machine technique", electronics, vol. 9, no. 11, p. 1850, nov. 2020. [3] h. wang, a. dragomir, n. i. abbasi, j. li, n. v. thakor, and a. bezerianos, "a novel real-time driving fatigue detection system based on wireless dry eeg", cogn neurodyn, vol. 12, no. 4, pp. 365–376, aug. 2018. [4] m. m. hasan, m. m. hossain, n. sulaiman, and s. khandaker, "microsleep predicting comparison between lstm and ann based on the analysis of time series eeg signal", jtec, vol. 16, no. 1, pp. 25–31, mar. 2024. [5] m. ramzan, h. u. khan, s. m. awan, a. ismail, m. ilyas, and a. mahmood, "a survey on state-of-theart drowsiness detection techniques", ieee access, vol. 7, pp. 61904–61919, 2019. [6] m. q. khan and s. lee, "a comprehensive survey of driving monitoring and assistance systems", sensors, vol. 19, no. 11, p. 2574, jun. 2019. [7] a.u.i rafid, a. raha niloy, a. i. chowdhury, and n. sharmin, "a brief review on different driver’s drowsiness detection techniques" ijigsp, vol. 12, no. 3, pp. 41–50, jun. 2020. [8] r. kannan, p. jahnavi, and m. megha, "driver drowsiness detection and alert system", in proceedings of the 2023 ieee international conference on integrated circuits and communication systems (icicacs), raichur, india: ieee, feb. 2023, pp. 1–5. [9] g. sikander and s. anwar, "driver fatigue detection systems: a review", ieee trans. intell. transport. syst., vol. 20, no. 6, pp. 2339–2352, jun. 2019. [10] j. jimenez-pinto and m. torres-torriti, "face salient points and eyes tracking for robust drowsiness detection", robotica, vol. 30, no. 5, pp. 731–741, sep. 2012. ensemble-based machine learning models for vehicle drivers’ fatigue state detection utilizing eeg signals 685 [11] a. picot, s. charbonnier, and a. caplier, "eog-based drowsiness detection: comparison between a fuzzy system and two supervised learning classifiers", in proceedings of the ifac, jan. 2011, vol. 44, no. 1, pp. 14283–14288. [12] a. quintero-rincon, m. e. fontecha, and c. d’giano, "driver fatigue eeg signals detection by using robust univariate analysis", 2019. [13] t. tuncer, s. dogan, f. ertam, and a. subasi, "a dynamic center and multi threshold point based stable feature extraction network for driver fatigue detection utilizing eeg signals", cogn neurodyn, vol. 15, no. 2, pp. 223–237, apr. 2021. [14] c. zhao, c. zheng, m. zhao, y. tu, and j. liu, "multivariate autoregressive models and kernel learning algorithms for classifying driving mental fatigue based on electroencephalographic", expert systems with applications, vol. 38, no. 3, pp. 1859–1865, mar. 2011. [15] r. chai et al., "driver fatigue classification with independent component by entropy rate bound minimization analysis in an eeg-based system" ieee j. biomed. health inform., vol. 21, no. 3, pp. 715–724, may 2017. [16] t. k. reddy, v. arora, v. gupta, r. biswas, and l. behera, "eeg-based drowsiness detection with fuzzy independent phase-locking value representations using lagrangian-based deep neural networks", ieee trans. syst. man cybern, syst., vol. 52, no. 1, pp. 101–111, jan. 2022. [17] j. r. paulo, g. pires, and u. j. nunes, "cross-subject zero calibration driver’s drowsiness detection: exploring spatiotemporal image encoding of eeg signals for convolutional neural network classification", ieee trans. neural syst. rehabil. eng., vol. 29, pp. 905–915, 2021. [18] m. m. hasan, m. m. hossain, and n. sulaiman, "fatigue state detection through multiple machine learning classifiers using eeg signal", applications of modelling and simulation, vol. 7, pp. 178–189, 2023. [19] j. hu and p. wang, "noise robustness analysis of performance for eeg-based driver fatigue detection using different entropy feature sets", entropy, vol. 19, no. 8, p. 385, jul. 2017. [20] r. fu, h. wang, and w. zhao, "dynamic driver fatigue detection using hidden markov model in real driving condition", expert systems with applications, vol. 63, pp. 397–411, nov. 2016. [21] a. r. hassan and m. i. h. bhuiyan, "computer-aided sleep staging using complete ensemble empirical mode decomposition with adaptive noise and bootstrap aggregating", biomedical signal processing and control, vol. 24, pp. 1–10, feb. 2016. [22] a. r. hassan and a. subasi, "automatic identification of epileptic seizures from eeg signals using linear programming boosting", computer methods and programs in biomedicine, vol. 136, pp. 65–77, nov. 2016. [23] t. yang, w. chen, and g. cao, "automated classification of neonatal amplitude-integrated eeg based on gradient boosting method", biomedical signal processing and control, vol. 28, pp. 50–57, jul. 2016. [24] r. chatterjee, a. datta, and d. k. sanyal, "ensemble learning approach to motor imagery eeg signal classification", in machine learning in bio-signal analysis and diagnostic imaging, elsevier, 2019, pp. 183–208. [25] jianliang min, p. wang, and jianfeng hu, "the original eeg data for driver fatigue detection", [data set]. figshare, 2017. [26] j. min, p. wang, and j. hu, "driver fatigue detection through multiple entropy fusion analysis in an eeg-based system", plos one, vol. 12, no. 12, p. e0188756, dec. 2017. [27] k. a. lee, g. hicks, and g. nino-murcia, "validity and reliability of a scale to assess fatigue", psychiatry research, vol. 36, no. 3, pp. 291–298, mar. 1991. [28] g. borg, "psychophysical scaling with applications in physical work and the perception of exertion", scand j work environ health, vol. 16, pp. 55–58, 1990. [29] s. g. horovitz et al., "low frequency bold fluctuations during resting wakefulness and light sleep: a simultaneous eeg‐fmri study", human brain mapping, vol. 29, no. 6, pp. 671–682, jun. 2008. [30] l. rokach, "ensemble-based classifiers", artif intell rev, vol. 33, no. 1–2, pp. 1–39, feb. 2010. [31] n.-c. jung, i. popescu, p. kelderman, d. p. solomatine, and r. k. price, "application of model trees and other machine learning techniques for algal growth prediction in yongdam reservoir, republic of korea", journal of hydroinformatics, vol. 12, no. 3, pp. 262–274, jul. 2010. [32] m. gashler, c. giraud-carrier, and t. martinez, "decision tree ensemble: small heterogeneous is better than large homogeneous", in proceedings of the 2008 seventh international conference on machine learning and applications, san diego, ca, usa: ieee, 2008, pp. 900–905. [33] l. baker and d. ellison, "the wisdom of crowds — ensembles and modules in environmental modelling", geoderma, vol. 147, no. 1–2, pp. 1–7, sep. 2008. [34] t. g. dietterich, "an experimental comparison of three methods for constructing ensembles of decision trees: bagging, boosting, and randomization", machine learning, vol. 40, no. 2, pp. 139–157, 2000. 686 m. m. hasan, m. n. islam, s. khandaker, n. sulaiman, a. islam, m. m. hossain [35] y. freund and r. e. schapire, "experiments with a new boosting algorithm", presented at the machine learning: proceedings of the thirteenth international conference, 1996, pp. 148–156. [36] m. adil, n. javaid, u. qasim, i. ullah, m. shafiq, and j.-g. choi, "lstm and bat-based rusboost approach for electricity theft detection", applied sciences, vol. 10, no. 12, p. 4378, jun. 2020. [37] r. polikar, "ensemble based systems in decision making", ieee circuits syst. mag., vol. 6, no. 3, pp. 21–45, 2006. [38] c. zhang and y. ma, eds., ensemble machine learning: methods and applications. new york, ny: springer new york, 2012. [39] a. rahman and b. verma, "cluster‐based ensemble of classifiers", expert systems, vol. 30, no. 3, pp. 270–282, jul. 2013. [40] d. tao, x. tang, x. li, and x. wu, "asymmetric bagging and random subspace for support vector machines-based relevance feedback in image retrieval", ieee trans. pattern anal. mach. intell., vol. 28, no. 7, pp. 1088–1099, jul. 2006. [41] n. garcía-pedrajas and d. ortiz-boyer, "boosting random subspace method", neural networks, vol. 21, no. 9, pp. 1344–1362, nov. 2008. [42] s. kotsiantis, "combining bagging, boosting, rotation forest and random subspace methods", artif intell rev, vol. 35, no. 3, pp. 223–240, mar. 2011. [43] tin kam ho, "the random subspace method for constructing decision forests", ieee trans. pattern anal. machine intell., vol. 20, no. 8, pp. 832–844, aug. 1998. [44] l. i. kuncheva, j. j. rodriguez, c. o. plumpton, d. e. j. linden, and s. j. johnston, "random subspace ensembles for fmri classification", ieee trans. med. imaging, vol. 29, no. 2, pp. 531–542, feb. 2010. [45] p. panov and s. džeroski, "combining bagging and random subspaces to create better ensembles", in advances in intelligent data analysis vii, vol. 4723, m. r. berthold, j. shawe-taylor, and n. lavrač, eds., in lecture notes in computer science, vol. 4723, berlin, heidelberg: springer berlin heidelberg, 2007, pp. 118–129. [46] q. wang, y. li, and x. liu, "analysis of feature fatigue eeg signals based on wavelet entropy", int. j. patt. recogn. artif. intell., vol. 32, no. 08, p. 1854023, aug. 2018. [47] m. rashid, m. mustafa, n. sulaiman, n. r. h. abdullah, and r. samad, "random subspace k-nn based ensemble classifier for driver fatigue detection utilizing selected eeg channels", ts, vol. 38, no. 5, pp. 1259–1270, oct. 2021. [48] s. zou, t. qiu, p. huang, x. bai, and c. liu, "constructing multi-scale entropy based on the empirical mode decomposition (emd) and its application in recognizing driving fatigue", journal of neuroscience methods, vol. 341, p. 108691, jul. 2020. [49] a. chaudhuri and a. routray, "driver fatigue detection through chaotic entropy analysis of cortical sources obtained from scalp eeg signals", ieee trans. intell. transport. syst., vol. 21, no. 1, pp. 185– 198, jan. 2020. [50] j. chen, h. wang, q. wang, and c. hua, "exploring the fatigue affecting electroencephalography based functional brain networks during real driving in young males", neuropsychologia, vol. 129, pp. 200–211, jun. 2019. [51] r. chai et al., "driver fatigue classification with independent component by entropy rate bound minimization analysis in an eeg-based system", ieee j. biomed. health inform., vol. 21, no. 3, pp. 715–724, may 2017. [52] c. zhao, c. zheng, m. zhao, y. tu, and j. liu, "multivariate autoregressive models and kernel learning algorithms for classifying driving mental fatigue based on electroencephalographic", expert systems with applications, vol. 38, no. 3, pp. 1859–1865, mar. 2011. [53] z. mu, j. hu, and j. yin, "driving fatigue detecting based on eeg signals of forehead area", int. j. patt. recogn. artif. intell., vol. 31, no. 05, p. 1750011, may 2017. [54] j. min, p. wang, and j. hu, "driver fatigue detection through multiple entropy fusion analysis in an eeg-based system", plos one, vol. 12, no. 12, p. e0188756, dec. 2017. [55] r. chai et al., "improving eeg-based driver fatigue classification using sparse-deep belief networks", front. neurosci., vol. 11, mar. 2017. 12269 facta universitatis series: electronics and energetics vol. 36, no 4, december 2023, pp. 465 483 https://doi.org/10.2298/fuee2304465r © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd review paper reviewing the photovoltaic potential of bijeljina in the republic of srpska ivana radonjić mitić1, tomislav pavlović1, dragoljub mirjanić2, darko divnić2, lana pantić1 1university of niš, faculty of sciences and mathematics, department of physics, niš, republic of serbia 2academy of sciences and arts of the republic of srpska, banja luka, republic of srpska, bosnia and herzegovina abstract. to estimate pv potential of bijeljina, pvgis and solargis databases were used. the results showed that bijeljina municipality has an average daily pv power potential of 3.50 kwh/kwp, thus belonging to areas with the favorable mid-range pv power potential values. average levelized cost of electricity is $0.12/kwh, consequently making pv technologies in bijeljina also economically competitive with conventional power-generating sources. in the light of the rapid development of photovoltaic technology, this paper gives a critical review of previous studies and suggests that the application of pv technologies has become even more attractive. high-efficiency pv modules and grid inverters were tested on examples of roof-mounted pv systems and ground-mounted pv system using specialized pvsyst software. comparison of the obtained results with previous studies gave a clear picture with advantages of these new solutions, and further support for pv technologies utilization. key words: photovoltaics (pv), solar irradiation, pv module, pv solar power plant, pv power potential, bijeljina 1. introduction people living in the balkans and eastern europe are typically breathing more toxic particulate air pollution than their neighbors in western europe, mostly due to wide use of coal-fired power plants, solid fuel heating and cooking (residential wood and coal stoves) and fewer air pollution reduction policies. relative to european average level, cities in bosnia and herzegovina (consisted of federation of bosnia and herzegovina, republic of srpska and brčko district) have high ambient concentrations of healthdamaging fine particulate air pollution [1]. received november 14, 2023; accepted november 14, 2023 corresponding author: ivana radonjić mitić university of niš, faculty of sciences and mathematics, department of physics, višegradska 33, 18000 niš, republic of serbia e-mail: ivana.radonjic-mitic@pmf.edu.rs 466 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić according to world energy council’s definition of energy sustainability based on energy security, energy equity and environmental sustainability of energy systems, in 2021 bosnia and herzegovina ranked penultimate in europe [2]. the primary energy supply of bosnia and herzegovina (b&h) is directed strongly towards fossil fuels [3]. in 2020, 70.5% of total generated electricity was produced using fossil fuels [4], [5]. b&h has large lignite reserves available at a reserve-to-production ratio of almost 200 years, thus most energy originates from coal (60%), followed by oil and gas [6]. the trend of using fossil fuels is the same in one of b&h entities, the republic of srpska (rs). in 2020, 72.3% of total generated electricity in rs was produced using fossil fuels [7]. due to the prevalence of coal of satisfactory quality in the entire territory of the republic of srpska, it is the most represented energy resource used in rs [8]. consequently, emissions intensity is high in rs and in entire b&h. the carbon intensity of b&h’s total final energy consumption (tfec) and of industrial consumption is almost double that of the eu (european union) average. it is estimated that a significant emissions reduction will not occur soon, having in mind that the country’s climate targets predict emissions increase until 2030 [6]. due to predominant use of fossil fuels for energy production, air quality in bosnia and herzegovina is very low. according to [9] across the whole european continent pm2.5 annual mean values in 2019 were the highest in bosnia and herzegovina. more specifically, during the year 2020, air was excessively polluted in 2/3 of total agglomerations in the republic of srpska. the air was clean or slightly polluted in only one agglomeration (trebinje). according to the data of the republic hydrometeorological institute of the republic of srpska, in 2020 on the territory of bijeljina the average annual limit values for no2, pm2.5 and soot were exceeded. the limit values are determined according to the decree on air quality values (official gazette of the republic of srpska no. 124/12) [10]. the paris agreement is a document that in 2016 replaced the kyoto protocol, an earlier international agreement on restraining the release of greenhouse gases (ghg). its main objective is to intensify the measures applied to combat climate change by holding the increase in the global average temperature to well below 2oc above pre-industrial levels (art. 2a, paris agreement). in order to achieve significant reduction of emissions, joint efforts are needed on a global scale, and that is why 195 countries from across the world signed the paris agreement [4]. bosnia and herzegovina is one of the signatories of the paris agreement. to meet the obligations under the paris agreement, the signatory parties were required to submit the intended nationally determined contributions (indcs), with the respective targets, to mitigate climate change. in b&h main targets in the indcs are: ▪ unconditional reduction of ghg emissions by 2% below bau (‘business as usual’) in 2030 (18% increase compared to 1990 level). ▪ conditional reduction of 23% below bau (3% below compared to 1990 level) is claimed in case of international support availability [4]. in order to meet the indcs objectives, bosnia and herzegovina has to promote the use of clean energy that is not associated with ghg emissions, thus diversifying the energy mix. besides environmental benefits of renewable energy (re) use, it is also important for fulfillment of increasing power supply requirements [4], [7]. reviewing the photovoltaic potential of bijeljina in the republic of srpska 467 rs originally regulated the field of renewable energy sources by passing the law on electricity and the law on energy. these laws specifically prescribe the roles of the government of the republic of srpska, i.e., the competent ministry and the regulatory commission in passing acts on promotion renewable energy sources. the adoption of the law on renewable energy sources and efficient cogeneration in may 2013 fully defined the legislative framework and enabled the functioning of the incentive system for all energy sources prescribed by law and thus created the conditions for unhindered implementation of obligations from the treaty of establishing the energy community regarding the fulfillment of the prescribed goals on the participation of energy from renewable sources in gross final energy consumption. the law on renewable energy sources and efficient cogeneration underwent certain amendments during 2013, as well as in 2015 and 2019 [7]. in may 2014, the government of the republic of srpska adopted the action plan of the republic of srpska for the use of renewable energy sources. the action plan prescribes the planning of production and consumption of electricity produced in plants that use renewable energy sources. the action plan also defines the quantitative limits for the incentive electricity production. the quantities of electricity, depending on the type of renewable energy source, i.e., the applied technology, are given for each individual year until 2020. with the adoption of amendments to the action plan of the republic of srpska for the use of renewable energy sources on 03.12.2020 (official gazette of the republic of srpska, no. 124/20), the validity of the action plan was extended until 31.12.2021 [7]. the republic of srpska has a solid share of res in the gross final consumption of electricity in relation to eu countries, mostly due to hydropower potential in the electricity segment. therefore, further exploitation of renewable energy sources in the future will largely depend on price reduction of certain technologies, incentive mechanisms, and administrative barriers to obtaining licenses [11]. climate change, ghg emissions, air quality and use of renewable energy sources (res) are intertwining and overlapping. increased res use decreases use of fossil fuels thus automatically affects ghg emissions and improves air quality. in rs, share of renewable energy sources in electricity production in 2020 was 27.6%, out of which 98.8% came from hydropower, leaving the potential of other res underutilized [7]. demand for electricity is growing because it is one of the main forms of energy used in the industrial and residential sectors, as well as in the commercial and public service sectors [4], [12], [13]. a favorable solution for meeting increasing needs for electricity is the use of photovoltaic (pv) technologies by which solar irradiation is directly converted into electricity [12], [14]. pv technologies use has many benefits such as clean [15] and free “fuel” and opportunity for countries to transform or develop their infrastructure and step up their low-carbon energy transition. additionally, pv module prices have fallen 80% in the last decade, while installed capacity has grown from 40 gw to over 600 gw, according to the international renewable energy agency (irena) [16], [17]. due to many advantages and following energy laws and recommendations for increased use of renewable energy sources, according to iea forecast [18], pv technology is going to become the largest installed electricity capacity in the world in 2027 (fig. 1). also, it is expected that renewables become the primary energy source for electricity in the world by the year 2026 [18]. 468 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić fig. 1 share of cumulative power capacity by technology in the period 2010-2027. adapted from [19] in march 2019, the parliament of republic of srpska adopted a new law on renewable energy and efficient cogeneration [20]. in rs, the incentive system is based on the most significant and most recognizable types of incentives: mandatory purchase of produced electricity at guaranteed purchase prices (feed-in tariffs (fits)) and a premium for consumption of produced electricity for own needs or selling on the rs market (feed-in premiums (fips)) [7], [20]. the right for incentive production of electricity from renewable sources and in efficient cogeneration, based on the contract on mandatory purchase of electricity at the end of 2020, was accomplished by 97 pv solar power plants, with a total installed power of 11.410 mw and planned annual production 14.063 gwh. in 2020, pv solar power plants generated 11.67 gwh of electricity, which is 83% of the planned annual production [7]. in 2020, 0.6% of generated renewable energy electricity and only 0.159% of total generated electricity in rs was produced using pv solar power plants [7]. there is limited data describing pv technologies use and the pv potential of the specific towns in rs. the aim of this paper is to give a detailed overview of the pv power potential in bijeljina, in the republic of srpska in a global context. firstly, an overview of solar irradiation values for the municipality of bijeljina is given. secondly, the energy of solar irradiation and also electrical energy which can be generated by the fixed, one-axis and dual-axis tracking pv solar power plants in the city of bijeljina are reviewed. the area of bijeljina is also considered regarding practical pv power potential and locations for possible pv systems installation. the main contribution of this paper is a critical evaluation of the available data from previous pv utilization studies [21], [22] in the light of recently created energy crisis, energy policies and available technology solutions for pv energy conversion. pv energy production contribution is analyzed per month, based on real climate data for a given location. the possibility of larger scale solar energy utilization was analyzed, depending on seasonal consumption and production in the city of bijeljina. the intention of this paper is to raise the share of electricity produced reviewing the photovoltaic potential of bijeljina in the republic of srpska 469 using pv technologies in total generated electricity in rs by contributing to pv potential data for bijeljina (that are often not publicly available in the english language). 2. geographical location of bijeljina and electricity consumption bijeljina (fig. 2) is a city and the center of the municipality of the same name. it is located in the northeastern part of the republic of srpska at coordinates 44.758o north and 19.211o east, 90 m above sea level. the area of the municipality of bijeljina is 734 km2, and the total population is about 105000. on the 2013 census, the city of bijeljina had 41121 inhabitants according to the data of the republic of srpska institute of statistics, and 42278 inhabitants according to the data of the agency for statistics of bosnia and herzegovina. bijeljina is the second largest settlement in the rs after banja luka. bijeljina is located in the plain of semberija and is a crossroads for serbia, croatia and the interior of bosnia and herzegovina. since it is located practically in the center of the fertile plain, it is one of the centers of food production and trade. the majority of production consists of wheat and corn cereals and vegetables such as cabbage, peppers and tomatoes. fruit growing and animal husbandry are also represented, but to a lesser extent [22], [23]. fig. 2 the geographical location of bijeljina in bosnia and herzegovina [23] the city administration of bijeljina has advanced furthest in the localization process of agenda 2030 into everyday work and strategic planning at the local level. agenda 2030 is the most comprehensive global sustainable and transformational development agreement for all united nations member states and has the sustainable development goals (sdg) at its core. the city of bijeljina is the first city/municipality in the republic of srpska (also in bosnia and herzegovina) to adjust and include relevant sdg targets and indicators into its development strategy. in 2018 sdgs were included into the revised development strategy of the city of bijeljina for the period 2019-2023 [24]. the subsidiary electricity distribution company (zavisno elektrodistributivno preduzeće (zedp)) “elektro-bijeljina“ a.d. bijeljina, which deals with the distribution and production of electricity, is in charge of supplying bijeljina with electricity. it 470 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić consists of five field units, two of which (mostly the bijeljina field unit and to a lesser extent ugljevik field unit) cover the territory of the city of bijeljina [25]. bijeljina is very important part of the electricity distribution system of the republic of srpska, as well as the whole of bosnia and herzegovina, especially because of its border position (it is located on the border with serbia). in 2020, zedp “elektro-bijeljina“ a.d. participated with 513.26 gwh (or 12%) in the balance of total electricity consumption (supply of electricity to end users) in mixed holding power utility of republic of srpska (mh “elektroprivreda republike srpske“) [26]. in the period 2012-2021, most of electricity consumption in zedp “elektro-bijeljina“ a.d. was used in households (55-60%). low voltage electricity consumption in households, public lighting and other consumption accounted for 71.3% (2020) and 70.7% (2021) in total electricity consumption in zedp “elektro-bijeljina“ a.d. [27]. in 2015, the city of bijeljina announced a public call for the lease of rooftops of public buildings for the pv systems installation, total power of 800 kw [28]. the first pv solar power plant in bijeljina power of 180 kwp was installed in 2015, on the sports hall roof of one primary school [28], [29]. according to the zedp “elektro-bijeljina“ a.d. report for 2020, the procured electricity from pv solar power plants in the bijeljina field unit amounted to 116.374 mwh of electricity, and the total from all field units within the zedp “elektro-bijeljina“ a.d. amounted to 363.494 mwh of electricity [25]. 3. estimation of solar irradiation in bijeljina the optimal use of pv systems requires accurate estimates of solar photovoltaic potential. geographic information systems (giss)-based estimation is a promising approach for estimating solar photovoltaic potential [30], [31]. in order to estimate pv potential of bijeljina, pvgis and solargis databases were used. pvgis (photovoltaic geographical information system) is very important for pv implementation because it estimates dynamics of the correlations between solar irradiation, climate, atmosphere, the earth's surface and the pv technology used [32], [33]. pvgis has been developed at the european commission joint research centre (jrc) in ispra, italy [34]. global solar atlas provides quick and easy access to solar resources and photovoltaic power potential data globally. it has been prepared by solargis under a contract to the world bank, based on a solar resource database that they own and maintain. it is funded by the energy sector management assistance program (esmap), a multi-donor trust fund administered by the world bank and supported by 13 official bilateral donors. the world bank group has selected solargis as its global provider of solar data and related solar energy assessment services [35]. in the municipality of bijeljina global horizontal irradiation has values in the range 3.64 – 3.68 kwh/m2 (per day) (fig. 3(a)), direct normal irradiation in the range 3.31 – 3.36 kwh/m2 (per day) (fig. 3(b)), and diffuse horizontal irradiation in the range 1.70 – 1.71 kwh/m2 (per day) (fig. 3(c)). reviewing the photovoltaic potential of bijeljina in the republic of srpska 471 (a) (b) (c) (d) fig. 3 global horizontal irradiation (a), direct normal irradiation (b), diffuse horizontal irradiation (c) and global tilted irradiation (d) in the municipality of bijeljina. adapted from [35] in the municipality of bijeljina optimal pv module angle (tilt angle) is in the range 34-35o, and global tilted irradiation has values in the range 4.21 – 4.26 kwh/m2 (per day) (fig. 3(d)). in bijeljina, the average insolation is 1800-1900 hours per year, which is 4.9-5.2 hours a day. the insolation is highest in summer and lowest in winter [21]. 472 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić according to pvgis, optimal pv module tilt angle in bijeljina is 34o. energy of the solar irradiation falling on the horizontal, optimally tilted and vertically placed surface in the city of bijeljina per year are given in table 1. table 1 energy of the solar irradiation falling on the horizontal, optimally tilted and vertically placed surface in bijeljina per year [36] location energy of solar irradiation falling on the horizontal surface (wh/m2) on the optimally tilted surface (wh/m2) on the vertically placed surface (wh/m2) bijeljina 3315.83 3777.55 2534.73 based on the data shown in table 1 it can be seen that in bijeljina the largest amount of solar irradiation energy falls on the optimally placed surface, slightly less on the horizontal, and the lowest on the vertically placed surface. the horizontal surface receives 12.22%, and the vertical 32.90% less energy of solar irradiation in relation to the optimally placed surface. although it is well known that the largest amount of solar irradiation falls on the optimally placed surface, it is important to calculate amount on the vertically and horizontally placed surface for bipv (building integrated photovoltaics) application because pv systems can be easily integrated with the existing and new building structures (rooftops and façades) [30], [37], [38], [39]. 4. estimation of pv output potential in bijeljina the practical pv potential of some locations is illustrated by the estimated power output produced per unit capacity of the assumed pv system configuration the pvout (photovoltaic power output (potential)) variable, measured in kwh/kwp. no pv technology can exploit the full theoretical potential of the solar resource determined by global horizontal irradiation (ghi) (and direct normal irradiation (dni) as complementary information). besides ghi (and dni), leading natural factor influencing pv power production is the air temperature because the pv conversion efficiency decreases at higher temperatures. locations where solar irradiation has values below the average may benefit from lower air temperatures during the year, and inversely, higher air temperatures may hinder the pv power output at locations with high solar irradiation values. the practical pv power potential is also limited by various physical and regulatory land-use constraints, the configuration of the pv system, the conversion efficiency of pv modules, and the shading and soiling of the modules [16]. for specific locations the estimated solar photovoltaic power generation potential can be found using specialized software [40]. countries in the middle east and north africa region and sub-saharan africa have excellent conditions for pv utilization, where longterm daily pvout averages exceed 4.5 kwh/kwp [16]. countries with the favorable mid-range pvout values between 3.5 and 4.5 kwh/kwp account for 71% of the global population (including five of the six most populous countries (china, india, the united states, indonesia, and brazil) and 100 others (canada, the rest of latin america, southern europe, african countries around the gulf of guinea, and central and southeast asia)) [16]. reviewing the photovoltaic potential of bijeljina in the republic of srpska 473 around 9% of the global population lives in 30 countries with average pvout below 3.5 kwh/kwp, dominated by european countries – except those in southern europe. even in countries with lower pvout values, the practical pv power potential is not significantly lower compared to the top-performing countries [16]. rs, and bijeljina as part of southeastern europe are located in the western part of the balkan peninsula. the average solar irradiation in the balkan countries is about 40% higher than the european average, but despite that, the use of solar energy is at a much lower level than in the european union countries [16], [22]. in bosnia and herzegovina, pvout is in the range 3.22 – 4.10 kwh/kwp, while the average pvout is 3.57 kwh/kwp. according to the average practical pv potential, b&h is in the 174th place in the world [35]. fig. 4 photovoltaic power potential for the municipality of bijeljina. adapted from [35] fig. 4. shows that in the municipality of bijeljina pvout has values in the range 3.47 – 3.51 kwh/kwp (per day). average value of pvout in bijeljina municipality is 3.50 kwh/kwp. only 10% of its territory has pvout less or equal 3.48 kwh/kwp, 50% pvout less or equal 3.50 kwh/kwp, and 90% of the bijeljina municipality has pvout less or equal 3.51 kwh/kwp. using pvgis program, calculated amount of electricity that can be generated with ground-mounted fixed, one-axis and dual-axis tracking pv solar power plants with monocrystalline silicon pv modules in bijeljina are given in table 2. 474 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić table 2 pvgis characteristics of a fixed, one-axis and dual-axis tracking pv solar power plant power of 1 mwp that would be installed in bijeljina [36] fixed one-axis tracking dual-axis tracking power of photovoltaic solar power plant (mwp) 1 1 1 power plant losses (%) 14 14 14 tilt angle (о) 34 36 annual electricity production (kwh) 1180536.78 1527103.13 1562084.74 based on the data shown in table 2, it can be seen that one-axis tracking pv solar power plant generates 29.36% more electricity in relation to a fixed pv solar power plant. the dual-axis tracking pv solar power plant generates 32.32% more electricity as compared to a fixed pv solar power plant. pv solar power plant installation is very complex because it should consider not only electricity production, but also initial investment, maintenance and operation cost, technical solution fitting in the environment, etc. the economic potential describes how much it costs to produce a unit of energy compared to other energy generation sources. pv economic potential in most countries in the world varies between $0.06/kwh and $0.14/kwh, and over 75% of the evaluated global area scores below $0.12/kwh [16]. in b&h, average lcoe (levelized cost of electricity) is $0.12/kwh, thus making pv technologies competitive with conventional power-generating sources [35]. sensitivity analysis for the lcoe of a pv system shows a strong dependance on solar irradiation and investment cost [41]. [42] investigated the sensitivity of energy rating of pv modules to different factors (including an uncertainty model). a sensitivity analysis discovered the measurement of irradiance and the nominal pv module operating temperature as the most significant sources of uncertainty [42]. the paris agreement has also recognized the global role of cities and authorities in achieving reductions in carbon emissions, thus the integration of pv technologies has been recommended (or made mandatory) in new eu buildings [30]. with the availability of existing building structures there is no need for additional land for pv systems installation [43]. exploiting rooftops of public buildings for pv systems installation is also an opportunity for improvement of buildings energy efficiency and mitigate carbon emissions [30], [44], [45]. there are also several challenges for roof-mounted pv system utilization in urban environments, such as soiling, shading, etc. soiling can reduce power output of pv systems especially in countries with energy system significantly relied on fossil fuels utilization [12], [46], [47]. although it is not easy to accurately estimate the rooftop pv potential of a city, it is important especially for policymaking [48], [49]. due to urban environment and space limitation in the city of bijeljina, several solutions for pv systems installation on existing rooftops of public buildings were considered, taking into account favorable rooftop orientation without high initial investment for reconstruction. 5. case studies of practical pv power potential of bijeljina in this part, the findings of previous studies for 1 mwp ground-mounted pv system and three roof-mounted pv systems are shown in the light of pv technologies development as the key factor for broader use in the future. afterwards, electricity production from pv reviewing the photovoltaic potential of bijeljina in the republic of srpska 475 systems in one year period is considered, with special reference to uneven production characteristic for cities in continental climate, like bijeljina. 5.1. analysis of previous pv installations studies in [21] an analysis of suitable rooftop and ground areas for pv systems installation in the area of bijeljina was performed. using satellite images, the analysis showed potential for roof-mounted photovoltaic systems. in this case, the total installed power would be 4 mwp which means 8500 mwh of electricity production annually. this amount could cover the complete electricity demand for municipal services such as street lighting, electric heating in public buildings etc., and about 5% of the total electricity demand. besides the installation of rooftop pv systems, there is also the possibility for the installation of ground-mounted pv systems. in this case a pv system with a power of 1 mwp requires an area of around 3 ha. for fulfillment of electricity demand of bijeljina municipality for public services, it would be enough to install ground-mounted pv system power of 2.5 mwp [21]. in [22], a selection of public buildings for pv systems installation on the territory of bijeljina municipality was performed. in order to get high values of solar energy and at the same time avoid excessive and irrational costs, attention was primarily paid to public buildings orientation, the shadows of surrounding objects and infrastructural conditions for installing pv systems. according to all above mentioned conditions, three public buildings were selected for the installation of pv modules on their roofs and façade. for the first object, designated as building 1, with roof area of 1605 m2, installation of 360 pv modules ideally south oriented was planned, and also installation of 72 pv modules on the south façade. with polycrystalline pv modules available in 2014 (table 4), predicted installation power was 103.68 kwp and estimated annual average electricity production was 119380 kwh. in a similar way, for the second object designated as building 2 with ideally south oriented roof area of 2156 m2, installation of 332 optimally inclined (34o) pv modules was planned. with the installation of pv system power of 79.68 kwp, annual average electricity production would be 91700 kwh. the third object, designated as building 3, with roof area of 1350 m2 enables installation of 179 pv modules total power of 42.96 kwp with annual average electricity production of 49400 kwh. due to constructional limitations, pv modules couldn’t be south oriented – 124 pv modules would be with southwest orientation, and 55 pv modules with southeast orientation. it was estimated that by using these three pv systems on building 1, building 2, and building 3, annual reduction of co2 emission in bijeljina municipality would be 268943.4 kg [22]. so far, none of these pv systems has been installed on any of the three public buildings. 5.2. state-of-the-art pv installations analysis and future perspective pv technologies have experienced considerable development progress and price acceptability during the last decade. from relatively short time interval (8 years), this paper gives a comparison with findings of previous pv system installation feasibility studies for bijeljina [21], [22] and also gives a recommendation for redesign of previous and current technical solutions with the utilization of the latest pv technologies. as mentioned in previous chapter, none of pv systems planned for building 1, building 2 and building 3 hasn’t been realized, mostly due to relatively low electricity price in bosnia and herzegovina in the period 2014-2020, as shown in table 3 [50]. 476 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić quite slow and late adoption of incentive measures for pv electricity production contributed to economic unattractiveness and practical unfeasibility of three above mentioned pv systems [7]. during 2022 electricity price increase became considerable, improving commercial perspectives of pv installations. additionally, further decrease of electricity generated from photovoltaics makes them more attractive [41]. also, policy makers demand reduction of fossil fuel energy production and consumption, and consequently renewable energy utilization growth [4], [7]. for rs and bijeljina area, pv energy imposes itself as favorable solution. table 3 electricity price for household and non-household consumers in bosnia and herzegovina [50] electricity price for household consumers (eur/kwh) electricity price for non-household consumers (eur/kwh) 2014 0.0676 0.0652 2015 0.0694 0.0625 2016 0.0711 0.0612 2017 0.0720 0.0581 2018 0.0722 0.0643 2019 0.0729 0.0647 2020 0.0721 0.0708 2021 0.0721 0.0719 2022 0.0733 0.0714 hereinafter, according to real typical meteorological year data, results of detailed analysis of electricity production from pv system at building 1, building 2, and building 3 are going to be shown. for this purpose, pvsyst 7.3.1 software (demo version) with included meteorological data was used [51]. also, compared to previous studies [21], [22], modern recently developed and commercially available pv modules are used (table 4). table 4 basic data of two generation of pv modules [22], [51] pv modules (2014) pv modules (2022) type polycrystalline monocrystalline maximum power (w) 240 300 efficiency at stc (%) 14.89 20.56 no. of cells 60 60 dimension w x l (mm) 1639 x 983 1640 x 992 figures 5-7. comparatively show monthly values of electricity impressed into electrical grid (egrid) for building 1, building 2, and building 3. first of all, considerable seasonality of electricity production can be noticed. as expected, the highest electricity production is in the period between april and october, with the maximum values in july. minimal electricity generation is in january and represents around 50% of calculated december production. having in mind that fixed pv solar power plants generates the highest electricity values during summer and that the highest electricity demand occurs during winter months (with corresponding air pollution highest values), getting the greatest electricity values when they are most needed is debatable. reviewing the photovoltaic potential of bijeljina in the republic of srpska 477 fig. 5 monthly distribution of produced electricity and pvout for building 1 [51] fig. 6 monthly distribution of produced electricity and pvout for building 2 [51] 478 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić fig. 7 monthly distribution of produced electricity and pvout for building 3 [51] pvout (normalized performance coefficient in pvsyst) average annual values for building 1, building 2, and building 3 are 3.47, 3.67, and 3.45, respectively. different pvout values are consequence of way of pv modules installation, orientation, etc. building 2 with all pv modules optimally inclined and south oriented has the highest pvout value. for the sake of comparison, 72 pv modules on building 1 are vertically inclined, and on building 3, pv modules have southwest and southeast orientation. table 5 gives comparison of the main parameters from previous study [22] and pvsyst simulation for building 1, building 2, and building 3. increasement in produced electricity can be noticed, mostly due to utilization of new generation pv modules, better optimization of pv modules in strings, and utilization of new generation inverters with average efficiency of 96%. as a result, total electricity generation in building 1 increased for 33.2%, in building 2 for 42%, and in building 3 for 30.4%. it can be concluded that pv modules orientation is of very high importance for roof-mounted pv installations in order to get maximum electricity production from new generation pv modules. table 5 comparison of the main parameters from previous study [22] and pvsyst simulation (2022) for public objects (building 1, building 2, and building 3) name of pv system number of pv modules installed power (kwp) produced energy (kwh/year) building 1 previous 432 103.68 119380 new concept 429 129 159046 building 2 previous 332 79.68 91700 new concept 330 99 130226 building 3 previous 179 42.96 49400 new concept 174 52 64398 reviewing the photovoltaic potential of bijeljina in the republic of srpska 479 according to publicly available data [25], electricity consumption seasonality for each month in the period 2018-2021 in bijeljina was analyzed (fig. 8). obtained monthly electricity consumption results are presented in relative percentage units, compared to the total electricity consumption for each year. fig. 8 electricity consumption data for each month in the period 2018-2021 in bijeljina [25] it can be observed that electricity consumption during summer months is 2-3% lower compared to winter months. electricity consumption in february is ostensibly lower due to the lesser number of days. seasonality issue for photovoltaic electricity generation is additionally analyzed for ground-mounted pv plant power of 1 mwp in bijeljina, based on pvsyst simulation. figure 9. compares monthly electricity production in bijeljina for fixed, one-axis and dual-axis tracking pv solar power plants (like in table 2). fig. 9 monthly electricity production from fixed, one-axis and dual-axis tracking pv solar power plants power of 1 mwp in bijeljina [51] 480 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić it can be noted that tracking pv solar power plants utilization increases electricity production during summer months, especially in july (34% for one-axis, and 40.6% for dual-axis). electricity production growth during winter months is relatively low. namely, one-axis tracking pv solar power plant utilization increases electricity production by 810% compared to fixed pv solar power plant during november, december, january and february, and for 16% in march. dual-axis tracking pv solar plant utilization increases electricity production for around 25% in november and december, 12% in january, 17% in february and around 21% in march. according to conducted simulations and obtained results, it can be concluded that: ▪ increase of pv modules and grid inverters efficiency leads to considerable electricity production growth; ▪ maximum exploitation of solar energy largely depends on optimal pv modules installation; ▪ pv electricity production seasonality issue in bijeljina and neighboring areas is significant and cannot be improved even by pv tracking systems utilization – electricity production growth is highest during summer months with already high production (and lower electricity consumption). 6. conclusions in the republic of srpska electricity is still mostly generated by using fossil fuels. as a consequence, during the year 2020, air was excessively polluted in 2/3 of total agglomerations in the republic of srpska. a favorable solution for decreasing fossil fuel electricity production and thus improving air quality is the use of pv technologies. the top benefits of pv technologies are production of clean energy without greenhouse gasses emissions, sustainability, scalability, versatility, installation price reduction and short project construction time. this paper gives an overview of the pv power potential in bijeljina, republic of srpska. in the light of all said, it can be concluded that in the municipality of bijeljina global horizontal irradiation has values in the range 3.64 – 3.68 kwh/m2 (per day), direct normal irradiation in the range 3.31 – 3.36 kwh/m2 (per day), and diffuse horizontal irradiation in the range 1.70 – 1.71 kwh/m2 (per day). optimal pv module angle is in the range 34-35o, and global tilted irradiation has values in the range 4.21 – 4.26 kwh/m2 (per day). for the city of bijeljina, it can be concluded that 12.22% less energy of solar irradiation falls on the horizontally placed surface, and 32.90% less on the vertically placed surface in relation to the optimally placed surface, and that the one-axis tracking solar power plant generates 29.36% more electricity and the dual-axis tracking pv solar power plant generates 32.32% more electricity as compared to a fixed pv solar power plant. average value of pvout in bijeljina municipality is 3.50 kwh/kwp and thus belongs to areas with the favorable mid-range values between 3.5 and 4.5 kwh/kwp. average lcoe is $0.12/kwh, consequently making pv technologies in bijeljina and rs also economically competitive with conventional power-generating sources. it can be concluded that bijeljina has good practical and economical pv potential, and also legislative basis for wider use of pv systems. on the territory of bijeljina municipality, three public buildings were selected for the installation of pv modules on their roofs and façade. after only eight years from initial reviewing the photovoltaic potential of bijeljina in the republic of srpska 481 feasibility study, analysis of possibility of pv solar power plants installation on the rooftops of three public buildings in bijeljina was conducted, with identical installation conditions, but with new generation pv modules and inverters. it was concluded that technological improvement of pv solar power plants components has favorable influence on pv electricity production (30.4-42%). this innovated study and redesign showed that for the considerable pv electricity production growth, pv modules installation should be very close to ideal. the results obtained in this paper are important for the increasing share of electricity generated using pv technologies in bijeljina and rs as well, for reducing the load on the existing electricity sources and for improving air quality. the presented results and methodology can be used to plan and design pv solar power plants and systems in private households and other facilities. they should assist the stakeholders in the identification of poas (project opportunity areas) in bijeljina municipality as a follow-up action. also, they should initiate raising awareness of pv benefits and wider use of pv systems in bijeljina. with the adoption of the law on renewable energy sources and efficient cogeneration, a legal framework in the republic of srpska has been created for the final definition of the system for the incentive production of electricity from renewable energy sources and efficient cogeneration. the government of the republic of srpska has also adopted the action plan that prescribes the planning of production and consumption of electricity from renewable energy sources. since its first publication, the action plan, in the part related to the quantitative limits for the incentive electricity, has undergone changes in quantities depending on the source, but the total planned amount of electricity produced from renewable sources (until 2021) remained unchanged. it can be concluded that promoting the production and consumption of electricity from renewable energy sources is in the interest of security supplying, preserving the environment and preventing climate change, ensuring constant and a reasonable increase in the share of energy from renewable sources in total energy consumption, enabling economic use of natural sources, and in the interest of sustainable development of local self-government units and social cohesion. in rs further exploitation of renewable energy sources in the future will largely depend on price reduction of certain technologies, incentive mechanisms, and administrative barriers. although the republic of srpska has a good position from the renewable energy resources perspective, as part of further strategic planning, additional activities need to be done to update data on the potential for their further exploitation. acknowledgement: this paper was done with the financial support of the project 19.032/961100/19 approved by the ministry of scientific and technological development, higher education and information society of the republic of srpska, of the faculty of sciences and mathematics, university of niš, and of the agreement 451-03-47/2023-01/200124 on the realization and financing of scientific research work of the faculty of sciences and mathematics, university of niš in 2023 by the ministry of education and science of the republic of serbia. references [1] report no: aus0001227, air pollution management in bosnia and herzegovina. western balkans, regional aqm – western balkans, report – aqm in bosnia and herzegovina, world bank, 2019. [2] world energy council in partnership with oliver wyman, world energy trilemma index 2021. 482 i. radonjić mitić, t. pavlović, d. mirjanić, d. divnić, l. pantić [3] t. pavlović, d. milosavljević, d. mirjanić, l. pantić, i. radonjić and d. piršl, "assessments and perspectives of pv solar power engineering in the republic of srpska (bosnia and herzegovina)", renew. sust. energy rev., vol.18, pp.119-133, 2013. [4] m. p. pablo-romero, a. sanchez-braza and a. galyan, "renewable energy use for electricity generation in transition economies: evolution, targets and promotion policies", renew. sust. energy rev., vol. 138, p. 110481, 2021. [5] international energy agency data. available at: https://www.iea.org/countries/bosnia-and-herzegovina [6] l. eicke, s. weko, m. apergi and a. marian, "pulling up the carbon ladder? decarbonization, dependence, and third-country risks from the european carbon border adjustment mechanism", energy res. soc. sci., vol. 80, p. 102240, 2021. [7] regulatory report about the electricity market, natural gas, oil and oil derivatives in the republic of srpska for 2020 (in serbian), 2021. available at: https://reers.ba/wp-content/uploads/2021/07/izvjestaj_rers_2020_ lat_2_dio.pdf [8] thermal energy potential data (in serbian). available at: https://ers.ba/termoenergetski-potencijal/ [9] 2019 world air quality report, region & city pm2.5 ranking. iqair, 2020. [10] annual report on air quality in the republic of srpska for 2020. 2020. available at: https://rhmzrs.com/ report/godisnji-izvjestaj-o-kvalitetu-vazduha-u-republici-srpskoj-za-2020-godinu/ [11] government of the republic of srpska, energy development strategy of the republic of srpska until 2035. banja luka: 2018. (vlada republike srpske, strategija razvoja energetike republike srpske do 2035. godine. banja luka: 2018.). [12] i. radonjić, t. pavlović, d. mirjanić and l. pantić, "investigation of fly ash soiling effectes on solar modules performances", sol. energy, vol. 220, pp. 144-151, 2021. [13] l. r. rodríguez, e. duminil, j. s. ramos and u. eicker, "assessment of the photovoltaic potential at urban level based on 3d city models: a case study and new methodological approach", sol. energy, vol. 146, pp. 264-275, 2017. [14] h. abuzaid, l. a. moeilak and a. alzaatreh, "customers’ perception of residential photovoltaic solar projects in the uae: a structural equation modeling approach", energy strateg. rev., vol. 39, p. 100778, 2022. [15] m. krstic, l. pantic, s. djordjevic, i. radonjic, v. begovic, b. radovanovic and m. mancic, "passive cooling of photovoltaic panel by aluminum heat sinks and numerical simulation", ain. shams. eng. j., in press. [16] global photovoltaic power potential by country. esmap, the world bank, ibrd-ida, world bank group, 2020, http://documents1.worldbank.org/curated/en/466331592817725242/pdf/global-photovoltaic power-potential-by-country.pdf [17] e. fuster-palop, c. prades-gil, x. masip, j. d. viana-fons and j. payá, "innovative regression-based methodology to assess the techno-economic performance of photovoltaic installations in urban areas", renew. sust. energy rev., vol. 149, p. 111357, 2021. [18] international energy agency, renewables 2022, analysis and forecast to 2027. available at: https://iea.blob.core.windows.net/assets/64c27e00-c6cb-48f1-a8f0-082054e3ece6/renewables2022.pdf [19] international energy agency, share of cumulative power capacity by technology. available at: https://www.iea.org/data-and-statistics/charts/share-of-cumulative-power-capacity-by-technology-20102027 [20] irena, renewable energy market analysis: southeast europe. abu dhabi: 2019, isbn 978-92-9260166-9. [21] energy development plan, cross border development, bijeljina & bogatić: cross border development. 17.02.2014. available at: https://www.investinbijeljina.org/download/20140210_energy_development_plan_ final_version.pdf [22] m. petrović, et al., feasibility study for use of solar energy for obtaining thermal and electric energy in the town of bijeljina and municipality of bogatic. sarajevo: enova, 2014. available at: http://www.bogatic.rs/ler/cms/download/studija-solarna-energija-1.pdf [23] details about the city of bijeljina. available at: https://sr.wikipedia.org/sr-el/бијељина [24] sustainable development goals, voluntary review, implementation of agenda 2030 and the sustainable development goals in bosnia and herzegovina. 2019. available at: https://sustainabledevelopment.un.org/ content/documents/23345vnr_bih_eng_final.pdf [25] electro distribution company details. available at: https://www.elektrobijeljina.com/ [26] government of the republic of srpska, electricity balance of the republic of srpska for 2020. banja luka: 2020. (vlada republike srpske, elektroenergetski bilans republike srpske za 2020. godinu. banja luka: 2020.). [27] zedp “elektro-bijeljina“ a.d., report on technical affairs for the period i-xii 2021. bijeljina: 2022. (zedp “elektro-bijeljina“ a.d., izvještaj o tehničkim poslovima za period i-xii 2021. god. bijeljina: 2022). reviewing the photovoltaic potential of bijeljina in the republic of srpska 483 [28] public call for solar plants. available at: https://gradbijeljina.org/lat/news/novosti//892.raspisan-javnipoziv-za-solarne-elektrane.html [29] d. d. milosavljević, t. m. pavlović, d. lj. mirjanić and d. divnić, "photovoltaic solar plants in the republic of srpska – current state and perspectives", renew. sust. energy rev, vol. 62, pp. 546-560, 2016. [30] a. a. a. gassar and s. h. cha, "review of geographic information systems-based rooftop solar photovoltaic potential estimation approaches at urban scales", appl. energy, vol. 291, 116817, 2021. [31] k. bódis, i. kougias, a. jäger-waldau, n. taylor and s. szabó, "a high-resolution geospatial assessment of the rooftop solar photovoltaic potential in the european union", renew. sust. energ. rev., vol. 114, p. 109309, 2019. [32] t. pavlović ed., t. pavlovic, a. tsangrassoulis, n. dj. cekic, p. ts. tsankov, d. lj. mirjanic and i. s. radonjic mitic, the sun and photovoltaic technologies. springer, 2020, isbn 978-3-030-22403-5. [33] t. pavlović, i. radonjić, d. milosavljević, l. pantić and d. piršl, "assessment and potential use of concentrating solar power plants in serbia and republic of srpska", therm. sci., vol. 16, no. 3, pp. 931-945, 2012. [34] photovoltaic geographical information system. data available at: https://ec.europa.eu/jrc/en/pvgis [35] global solar atlas. available at: https://globalsolaratlas.info/map [36] photovoltaic geographical information system. data available at: https://re.jrc.ec.europa.eu/pvg_tools/ en/tools.html [37] a. boccalatte, m. fossa and c. ménézo, "best arrangement of bipv surfaces for future nzeb districts while considering urban heat island effects and the reduction of reflected radiation from solar façades", renew. energy, vol. 160, pp. 686-697, 2020. [38] j. polo, n. martín-chivelet, m. alonso-abella and c. alonso-garcía, "photovoltaic generation on vertical façades in urban context from open satellite-derived solar resource data", sol. energy, vol. 224, pp. 1396-1405, 2021. [39] h. sun, c. k. heng, s. e. r. tay, t. chen and t. reindl, "comprehensive feasibility assessment of building integrated photovoltaics (bipv) on building surfaces in high-density urban environments", sol. energy, vol. 225, pp. 734-746, 2021. [40] solar data behind the maps. data available at: https://solargis.com/maps-and-gis-data/tech-specs [41] fraunhofer ise, levelized cost of electricity renewable energy technologies. 2021. available at: https://www.ise.fraunhofer.de/content/dam/ise/en/documents/publications/studies/en2021_fraunhoferise_lcoe_renewable_energy_technologies.pdf [42] j. c. blakesley, t. huld, h. müllejans, a. gracia-amillo, g. friesen, t. r. betts and w. hermann, "accuracy, cost and sensitivity analysis of pv energy rating", sol. energy, vol. 203, pp. 91-100, 2020. [43] j. allegrini, k. orehounig, g. mavromatidis, f. ruesch, v. dorer and r. evins, "a review of modelling approaches and tools for the simulation of district-scale energy systems", renew. sust. energy rev., vol. 52, pp. 1391-1404, 2015. [44] k. mainzer, s. killinger, r. mckenna and w. fichtner, "assessment of rooftop photovoltaic potentials at the urban level using publicly available geodata and image recognition techniques", sol. energy, vol. 155, pp. 561-573, 2017. [45] l. s. pantić, t. m. pavlović, d. d. milosavljević, d. lj. mirjanić, i. s. radonjić and m. k. radović, "electrical energy generation with differently oriented pv modules as façade elements", therm. sci., vol. 20, no. 4, pp. 1377-1386, 2016. [46] m. p. petronijevic, i. radonjic, m. dimitrijevic, l. pantic and m. calasan, "performance evaluation of single-stage photovoltaic inverters under soiling conditions", ain. shams. eng. j., in press. [47] i. s. radonjić, t. m. pavlović, d. lj. mirjanić, m. k. radović, d. d. milosavljević and l. s. pantić, "investigation of the impact of atmospheric pollutants on solar module energy efficiency", therm. sci., vol. 21, no. 5, pp. 2021-2030, 2017. [48] t. zhong, z. zhang, m. chen, k. zhang, z. zhou, r. zhu, y. wang, g. lü and j. yan, "a city-scale estimation of rooftop solar photovoltaic potential based on deep learning", appl. energy, vol. 298, p. 117132, 2021. [49] g. xexakis and e. trutnevyte, "consensus on future eu electricity supply among citizens of france, germany, and poland: implications for modeling", energy strategy rev., vol. 38, p. 100742, 2021. [50] electricity price statistics. data available at: https://ec.europa.eu/eurostat/statistics-explained/index.php?title= electricity_price_statistics#electricity_prices_for_non-household_consumers [51] pvsyst software tool. available at: https://www.pvsyst.com/download-pvsyst/ facta universitatis series: electronics and energetics vol. 35, no 2, june 2022, pp. 269-282 https://doi.org/10.2298/fuee2202269p © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper wk-fnn design for detection of anomalies in the computer network traffic danijela protić1, miomir stanković2, vladimir antić3 1center for applied mathematics and electronics, belgrade, serbia 2mathematical institute of sasa, belgrade, serbia 3center for applied mathematics and electronics, belgrade, serbia abstract. anomaly-based intrusion detection systems identify abnormal computer network traffic based on deviations from the derived statistical model that describes the normal network behavior. the basic problem with anomaly detection is deciding what is considered normal. supervised machine learning can be viewed as binary classification, since models are trained and tested on a data set containing a binary label to detect anomalies. weighted k-nearest neighbor and feedforward neural network are highprecision classifiers for decision-making. however, their decisions sometimes differ. in this paper, we present a wk-fnn hybrid model for the detection of the opposite decisions. it is shown that results can be improved with the xor bitwise operation. the sum of the binary “ones” is used to decide whether additional alerts are activated or not. key words: wk-fnn, anomaly detection, weighted k-nearest neighbor, feedforward neural network 1. introduction due to the enormous increase in computer applications in the last few decades, the need for protection of the computer networks has multiplied [1]. intrusion detection systems (idss) are the main defense of the network infrastructure, used to detect attacks or to indicate anomalies in the behavior of the computer network. the signature or misuse idss proactively detect the presence of known maliciousness. the most practical method to detect signature of malicious content is to measure the similarity between detected pattern of current network activity and the already known patterns of various types of malicious attacks [2]. the anomaly detection is performed by detecting changes in system behavior or usage patterns [3]. the identification of anomalies in the network is essential to diagnose received october 11, 2021; received in revised form december 6, 2021 corresponding author: danijela protić center for applied mathematics and electronics, belgrade, serbia e-mail: adanijela@ptt.rs 270 d. protić, m. stanković, v. antić attacks or failures that seriously affect the performance and security of the computer network [4, 5]. the goal of an anomaly-based ids is to proactively detect any activity or an event on a host computer or network that shows a deviation from a normal network behavior [2]. in order to provide suitable solution for the detection of anomalies in the computer network, the concept of normality is fundamental. the idea of normality is usually introduced through a formal model that expresses the relationship between the variables involved in the dynamics of the system, so that an event is recognized as abnormal when its degree of deviation in relation to the profile or the behavior of the system, specified by the normality model, is high enough [6]. in the last few decades, machine learning has started to play an important role in anomaly detection [6, 7, 8]. in supervised machine learning, anomaly detection can be thought of as a kind of binary classification, since the data sets for training and testing the models contain binary labels: one for normal observations and one for abnormal observations. it should be noted that the troubleshooting data set can be quite unbalanced in detecting anomalies. therefore, it is important to use some data transformation algorithms prior to supervised learning. in this article we propose a three-step algorithm that removes all irrelevant features from the kyoto 2006+ dataset and normalizes the instances so that the influence of one feature cannot dominate the others. after pre-processing is completed, there were nine features left to train two binary classifiers, namely the weighted k-nearest neighbor (wk-nn) and the feedforward neural network (fnn). the classifiers show a high precision in decision making but, in some cases their decisions are different. the proposed wk-fnn hybrid model recognizes the opposite decisions based on a bitwise exclusive or (xor) operation between the outputs of the classifiers. the binary sum of the opposing decisions is used as the basis for the additional warnings. two alerts are combined. trigger alert reacts to the opposite decisions and threshold-based alert allows users to prioritize alerts that are rated as critical. 2. literature review since the nature of the features and the number of instances determine the applicability of anomaly detection techniques, the analysis of the high-dimensional data sets becomes a challenge for researchers [9, 10]. in the last few decades, researchers have investigated the intrusion detection systems for various purposes and on the different datasets. in [11] and [12] the authors compare the darpa98, kdd cup ’99, nsl-kdd, kyoto 2006+ and caida datasets. in addition, the authors in [13] have compared a signature-based and anomaly-based classification and examined the iscx2012, cic-ids-2017 and cse-cic2018 datasets in the context of the feature selection and the attack types. in [14] the authors describe the functionality of the adfa-lf and adfa-wd datasets and compare them with the darpa98, kdd cup ’99, nsl-kdd and cic-ids-2017 datasets. the datasets are simulated or captured from real computer network traffic, and differ in size, number of features, purpose, type of attacks, etc. the main characteristics of the above datasets are summarized in the table 1. wk-fnn design for detection of anomalies in the computer network traffic table 1 description of the datasets dataset type of the attacks features kind of traffic description adfa-ld and adfawf hydra-ftp, hydra ssh, adduser, javameterpreter, meterpreter, webshell. 26 from the host for normal activities, with user behavior ranging from web browsing to latex document preparation. created from the evaluation of the systemcall-based hids; linux and unix os (ld) and windows (wf). awid attacks on 802.11 (authentication request, probe request, injection, arp flooding). 156 features extracted from each packet emulated (small network, 11 clients) wlan traffic in packetbased format; 37 million packets in one hour captured. caida ddos network traffic traces real (collected on high-speed monitors) collected on commercial backbone link from 2008 to 2019; does not contain diversity of attacks. cic-ids2017 botnets, cross-sitescripting, dos, ddos, goldeneye, hulk, rudy, slowhttptest, slowloris. more than 80 emulated (small network) captured over a period of 5 days; contains network traffic in packet-based and bidirectional flowbased format. cse-cic2018 brute force, hearthbleed, botnet, dos, ddos, web attacks, infiltration from the network inside. more than 80 emulated (simulated scenarios) 10 days network traffic and log files of 50 machines from the attacker side and 420 pcs and 30 servers from the victim organization. darpa98 dos, privilege escalation (r2l and u2r), probing. 41 emulated (small network) 7 weeks of network traffic in packet-based format and audit log. iscx 2012 scenarios: infiltrating the network from the inside, http dos, ddos using an irt bootnet, ssh brute force attack. 20 emulated (small network) 7 days of packet network traffic observed. kdd cup ‘99 dos, privilege escalation (r2l and u2r), probing. 42 emulated (small network) derived from the darpa98 dataset. five weeks of network traffic in packet-based format kyoto 2006+ attacks against honeypots (dos, exploits, malware, port scans, shellcode). 24 real (honeypots, and regular servers) 3 years of real packetbased network traffic; packets converted into the sessions. nsl-kdd dos, privilege escalation (r2l and u2r), probing. 42 emulated (small network) derived from the kddcup ’99 dataset; does not contain redundant records in the training set nor duplicates in the test set. as it is shown in table 1, all datasets, with the exception of the kyoto 2006+ dataset, are either simulated network data or come from actual network traffic, which is mainly 272 d. protić, m. stanković, v. antić used for signature detection. the dataset is also the only one intended for anomaly-based ids modelling. for these reasons, this study uses the kyoto 2006+ dataset as the basis for binary classification experiments with machine learning (ml) models. machine learning is effective in eliminating redundant and irrelevant data, increasing learning accuracy and improving comprehensibility of the results [15]. feature selection has direct influence on the efficiency of the results and offers a way to reduce computation time, improve accuracy, and enable a better understanding of the classification models or the data. in the case of an anomaly detection, the labels assigned to the data instances are usually in the form of binary values [16]. machine learning models can be very effective in learning normal or abnormal patterns from training data and in detection of the anomalies in the computer networks [17]. the kyoto 2006+ dataset is captured and created in actual network traffic to classify network traffic as normal or abnormal. since the purpose of this work is to present the hybrid classifier for improved anomaly detection in binary classification this data set is used in experiments. the kyoto 2006+ dataset is unbalanced data set in which the amounts of normal and abnormal data are unbalanced. in [18], the authors present a series of tests they carried out to assess the effectiveness of ml techniques in detecting anomalies and present the algorithms that gave the best results. in [19] the authors carried out experiments with 10 daily records from the kyoto 2006+ dataset and showed that accuracy decreases slightly when the number of features is reduced from 17 to 9 and the instances range from -1 to 1. in supervised machine learning, wk-nn has the highest accuracy of a variety of machine learning models. in [20] the author proposes a method that can detect large-scale attacks in real time with weighted k-nn classifiers. the key factor in developing an anomaly-based intrusion detection system is the selection of significant features for decision-making. a good feature selection for choosing meaningful and as few features as possible plays a key role in successful anomaly-based ids. in [21] the authors proposed a new learning algorithm for pseudo-neighbor elimination and anomaly detection based on the wk-nn model in order to minimize the effects of these distant neighbors. in [22] the authors examine the applicability of the feedforward architecture of neural networks for traffic prediction and compare the performance of different back-propagation algorithms. the prediction is made for various random aggregates of traffic flows. the performance analysis showed the effectiveness of the proposed method for an adequate choice of the learning algorithm. in [23] the authors approached an ids using a 2-layered feedforward neural network. in the training phase, the early-stop strategy is used to overcome the problem of overfitting in neural networks. the proposed system is assessed against the darpa dataset. the selected connections from the darpa dataset are preprocessed and feature range is converted into [-1, 1]. these modifications affect final detection results in particular. in [24] the authors proposed ids model, which uses the feedforward neural network and the back-propagation algorithms along with various optimization techniques to minimize the overall computational overhead, while maintaining a high level of performance. the experimental results on the benchmark nsl-kdd dataset shows that in some cases the accuracy of the proposed ids model is better than that of the other ids models. because of its high performance and low computational requirements, the proposed model was a suitable candidate for real-time implementation. in [25] the authors showed the results on the accuracy of two fnn classifiers in the short processing time when deciding on anomalies in the behavior of the complex computer networks. in [26] the authors used a pc-generated offline data set to assess the performance of two neural network-based techniques. in this data set, each wk-fnn design for detection of anomalies in the computer network traffic data point corresponds to a normal or anomaly class. it is assumed that the anomaly data is the intruder data, obtained by disabling some pc controllers, audio drivers, graphics drivers, etc. in this article, the authors took 15 randomly selected features from the log file, which contains 20,000 records. the authors have shown that the fnn classifiers are approximately 98% accurate. hybrid models for anomaly detection are also the topic of various research. in scenario given in [27], the authors propose a hybrid online-offline system in which the offline model maintains the general properties of the network traffic, based on radius nearest neighbor while the online model based on the support vector machine continuously learns and they work together to detect anomalies. the method is evaluated using the nsl-kdd 2009 dataset. this model achieved an accuracy of ~95% with known anomalies. it should be noted that the nsl-kdd dataset is the simulation of the computer network traffic on the middle-size american military base [11]. in order to improve the detection performance and to reduce the tendency to frequent attacks, the two-stage hybrid method based on binary classification and k-nn technique is proposed in [28]. first, binary classifiers and an aggregation module are used to efficiently identify the exact classes of network connections. afterwards, the connections whose classes insecure, further determine their classes by the k-nn algorithm. the second step is built on the results of the first step and is a useful addition to the first step. by combining the two steps, the proposed method achieves reliable results in the nsl-kdd data set [11]. network alerts are a critical aspect of network performance monitoring because they are designed to provide information technology (it) administrators with quick insight into the network problems. therefore, network alerting should be an important consideration for those choosing their network alerting tools. in [29] the author provides information on the four main types of network alerts. real-time alerts periodically or continuously scan all areas of the network for network behavior problems. the time between each network pass is an important consideration as it determines how quickly network problems are identified. intelligent alerts provide details about the problem, when and where it occurred, and which areas of the network are affected. flexible delivery alerts are network monitoring notification tools that can be configured for scheduled and hourly alerts to ensure alerts are received at the right time. critical and tiered alerts are tools for minimizing the number of network notifications. network monitoring alerts, also known as threshold alerts, are tools that support critical and tiered alerts, so that the user can prioritize alerts that are critical or violate a preconfigured network configuration. systems with tiered alerting assign problems to one of several categories. alerts are processed according to the importance of the category. in [30] the authors confirm that the alert ranking classifies alerts according to the dangerousness of the alert. the alarm tactic requires that the functionality responsible for the alarm classification should not be computationally expensive, otherwise the advantages of the quick response, which is obtained by a prioritized reaction to dangerous alerts, are negated. in [31] the authors explain that not all classification algorithms equally accurate. therefore, it is important to carefully select the criteria that can accurately classify the alerts based on the specific security needs of an organization. in [32] the authors describe the efficiency of the basic methods for rule-based alert classification and explain that engineers usually concentrate primarily on critical alerts, but not on errors and warnings. they claim that engineers should investigate more alerts. at the same time, they find a lot of time is wasted in investing in non-serious warnings (low precision), but many serious alerts are still lost. in [33] the authors divide alerts into lowand high-level alerts and point 274 d. protić, m. stanković, v. antić out that high-level alert management is a potential task that helps the administrator to analyze alerts correctly and to allocate time and effort. 3. data collection the kyoto 2006+ dataset is publicly available and a widely used dataset in networkbased intrusion detection research. the dataset includes more than three years of actual traffic data collected from honeypots (solaris 8 for intel, windows xp (no patch, sp2, fully patched), nepenthes, others), darknet sensors, and other systems (mail server to collect various types of mails, web crawler developed by ntt information sharing platform laboratories, windows xp to evaluate malware activities) deployed on five different computer networks inside and outside the university of kyoto [34]. the kyoto 2006+ dataset is developed through deploying of honeypots in the network, but does not describe any details the types of attack [13]. in addition, the ids bro has been used to convert packet-based traffic into a format called sessions. ids bro is a signature and behaviorbased analysis framework that provides detailed data on hypertext transfer protocol (http), domain name system (dns), secure shell (ssh) communication protocol and strange network behavior [35]. thanks to its analysis engine, it is suitable for high performance network monitoring, protocol analysis, and real-time application layer status information. the bro event engine is responsible for receiving the internet protocol (ip) packets and converting them into events forwarded to the policy script interpreter, which then produces an output [36]. during the observation period (from 2006 to 2009) more than 50 million sessions with normal traffic, 43 million sessions with known attacks and 425 thousand sessions with unknown attacks were recorded. each session includes 24 features, 14 out of which characterize statistical features derived from the kdd ’99 cup dataset and 10 additional flow-based features (ip addresses, ports, and duration) [11, 37]. a feature label indicates the presence of attacks [38]. in the original data set, there were three labels: 1 for normal sessions, -1 for known attacks, and -2 for unknown attacks. however, since unknown attacks are very rare in the dataset (~0.7%), we assigned the same label to known and unknown attacks (-1), which leads to binary classification [39]. the main problem associated with the kyoto 2006+ is its size. in this study, this problem is solved with the pre-processing algorithm, which removes all irrelevant features (categorical features, statistical features regarding to the connection duration, and features for further analyses) and normalizes instances of the relevant features with a hyperbolic tangent function to the range [-1,1]. after the pre-processing is completed, features 5-13 remain for the evaluation of the models, and the feature label identifies the session as normal or abnormal [19, 40]. table 2 shows the description of the features used in the experiments. in this research, the notation of the instances is as follows: the number of instances in a daily record is referred to as the total number of instances, the number of instances labelled with 1 is referred to as the number of normal instances, while the number of instances labelled with -1 denotes the number of anomalous instances. wk-fnn design for detection of anomalies in the computer network traffic table 2 description of the features from the kyoto 2006+ dataset feature description count the numbers of connections whose source ip address and destination ip address are the same to those of the current connection in the past two seconds. same_srv_rate % of connections to the same service in the count feature. serror_rate % of connections that have ‘syn’ errors in count feature. srv_error_rate % of connections that have ‘syn’ errors in srv_count (% of connections whose service type is the same to that of the current connections in the past two seconds) features. dst_host_count among the past 100 connections whose destination ip address is the same to that of the current connection, the number of connections whose source ip address is also the same to that of the current connection. dst_host_srv_count among the past 100 connections whose destination ip address is the same to that of the current connection, the number of connections whose service type is also the same to that of the current connection. dst_host_same_src_port_rate % of connections whose source port is the same to that of the current connection in dst_host_count feature. dst_host_serror_rate % of connections that have ‘syn’ errors in dst_host_count feature. dst_host_srv_serror_rate % of connections that have ‘syn’ errors in dst_host_srv_count feature. label indicates whether the session was attack or not; ‘1’ means normal. ‘1’ means known attack was observed in the session, and ‘-2’ means unknown attack was observed in the session. 4. wk-fnn model a classification model generally maps the input data to a specific target and determines which label to assign to the new, unlabeled data. with binary classification, a classifier assigns the input data into one of two classes. the wk-fnn hybrid model is based on two binary classifiers. the wk-nn classifier is a lazy learner who saves training data and labels, and waits for the test data. instead of focusing on building a general model, it works on storing instances of the training data into classes. the fnn, an eager learner, creates a classification model based on the training data set before it is received data for prediction. the basic idea of the wk-nn is to expand k-nearest neighbor (k-nn) algorithm which stores all instances corresponding to the training data in n-dimensional space. predictions for a new instance x are made by searching the entire training set for the k closest neighbors and summarizing the output variable for these cases. the classification is based on calculation of a simple majority vote of each point. wk-nn extends the k-nn such that instances of the training set, which are particularly close to the new instance, have more weight in the decision than those who are more distant. the main idea is to make the distant neighbor less effective than the closest, at making decisions by majority vote, by giving more weight to the nearest point and less to the more distant [41, 42]. to do this, the distances 𝑑𝑤(𝐱, 𝐲) = √∑ (𝑥𝑖 − 𝑦𝑖)2𝑝 𝑖=1 are converted into the weights. the simplest conversion 276 d. protić, m. stanković, v. antić function is inverse of the distance. the closest k points are weighted with weights 𝑤 = 1 𝑑𝑤(𝒙,𝒚)2 (the weight decreases with increasing the distance). the fnn consists of a series of layers with highly connected neurons in each layer, with the final layer producing the outputs that relate the inputs to the desired output, so that 𝑦𝑖(𝐰, 𝐖) = 𝐹𝑖(∑ 𝑊𝑖𝑗𝑓𝑗(∑ 𝑤𝑗𝑖𝑥𝑙 + 𝑤𝑗0 𝑚 𝑙=1 ) 𝑞 𝑗=1 + 𝑊𝑓0) (1) where fj and fi denote hidden and output layer transfer functions, m represents the number of inputs xl, q represents the number of outputs yi, w and w are weight matrices, and wj0 and wf0 are biases [43]. the fnn is trained through an iterative process to modify the weights so that the given inputs map an appropriate response. in this way, the inputs are classified according to the target classes. in general, fnns have a large number of parameters which, due to the convergence to a correct set of parameter values, can lead to the estimation problems [44]. for this reason, the weights are updated according to the levenberg-marquardt (lm) algorithm [45, 46]. the design of the wk-fnn model is based on the wk-nn and fnn binary classifiers, which work in parallel and decide on the anomaly in the behavior of the computer network. the basic idea is to train wk-nn and fnn with the same training set and evaluate highprecision classifiers (figure 1). subsequently, the classification of the unknown network transfer is carried out by both classifiers. the decisions about the anomaly are transmitted to the xor block, where the result of the counter-decision is calculated. finally, the percentage of the opposite decision triggers an alert. fig. 1 classifiers’ training the wk-fnn model is a three-layer structure. the first layer classifies the network traffic according to the both wk-nn and fnn. a bit-by-bit xor operation is carried out in the second module. the third part of the wk-fnn marks the opposite decisions (fig. 2). out1 out2 decision 10% 0 classification unknown traffic wknn fnn x o r 𝑠𝑢𝑚(𝑥𝑜𝑟(𝑜𝑢𝑡1, 𝑜𝑢𝑡2)) xor block training wknn settrain fnn wk-fnn design for detection of anomalies in the computer network traffic fig. 2 wk-fnn model through the classification, both classifiers decide about the unknow network traffic and the outputs of each of the classifiers (decision about normal network behavior or the anomaly) are then passed on to the xor block, where the ‘exclusive or’ bitwise operation is performed. the different/opposite decisions are recognized by performing the xor logical operation on the classification results, which is logically true (1) if one of the outputs is, but not both, non-zero. otherwise the result is logical false (0). the sum of the different decision in the decision block is then calculated as follows 𝑠𝑢𝑚𝑜𝑢𝑡 = ∑ 𝑥𝑜𝑟(𝑜𝑢𝑡1𝑘, 𝑜𝑢𝑡2𝑘) 𝑙𝑒𝑛𝑔𝑡ℎ(𝑑𝑎𝑡𝑎𝑠𝑒𝑡) 𝑘=1 (2) where out1k and out2k represent the k-th results of the classification, and outk=xor(out1k,out2k). the result is then passed on to the decision-making engine. the opposite decisions indicated by bit-by-bit xor operation can generate different types of alerts, depending on the organizational structure and information security requirements such as confidentiality, integrity and data availability. the alerts can be sent to the network administrator or to the other ids. it should be noted that the additional anomaly alerts are separate from regular it alerts. therefore, it is necessary to define the anomaly alert promotion rule in order to generate an it alert based on the anomaly alerts. the promotion rule of the wk-fnn model is based on the ratio between the number of opposing decisions and the total number of decisions of the classifiers, expressed as a percentage. a decision is presented based on a linear scale threshold. the basic idea behind the decision is that the number of contradicting decisions is low if the two classifiers are really highly accurate. otherwise, the results will not be reliable. instead of making additional decisions about what is normal or abnormal, the decision block points out the difference in the classifiers’ decisions. if both choose ‘normal’ or ‘anomaly’ their decisions are not different. otherwise, their decisions will differ, and the result on xor operation will be binary one. as ‘normal’ traffic refers to binary 1 (label equals 1) and ‘anomaly’ refers to the binary 0 (label equals to -1), the number of opposing decisions refers to the sum of all decision, because the same decisions result in zero after performing the xor operation. the number of opposing decisions 𝑠𝑢𝑚𝑜𝑢𝑡 is given in the eq. 2. divided by the total number of the decisions, given as 𝑙𝑒𝑛𝑔𝑡ℎ(𝑑𝑎𝑡𝑎𝑠𝑒𝑡), the resulting value shows the percentage of the opposing decisions. for this experiment, we have divided the priority levels of the alert scale into five different categories: negligible/insignificant alerts (whitelisted), potential threats (they have no direct influence on network traffic and the network structure), warnings (provide information about the risks), silent alarms (critical with ticketing) and high priority alarms (signal an attack). the scale is linear and divided into five groups with two percentage ranges, from 0 to 10 %. it should be noted that the scale can be chosen differently, depending on the needs of the organization security. 5. experimental results the experiments are carried out on three days of the computer network traffic recorded at kyoto university computer network in february 2007. all models are selected based on 278 d. protić, m. stanković, v. antić processing time and memory usage and are simulated in the matlab classification learner platform for windows 64-bit os installed on an intel core i7 processor with 2.7ghz cpu and 16 gb ram memory. the wk-nn model is trained by approximating an instance by the weighted sum of 10 k-nearest neighbors. weights are calculated based on inverse distances. the fnn with one hidden layer, nine inputs, nine nodes in the hidden layer and one output node is trained with the lm algorithm. in order for the lm algorithm to work correctly, the activation function of the hyperbolic tangent is used for each node, since it is differentiable, centered around 0, and its output range is [-1, 1]. the weights are initialized to the small random numbers, because the optimization begins as a gradient descent (gd) algorithm, which speeds up the convergence of the lm algorithm and minimizes the wrong approximations [20]. the wk-fnn model design is tested as follows: ▪ each of the three daily sets, consisting of 57278, 57279 and 58317 instances, is divided into the two subsets: set1 of 75% of the instances is used to train and test the classifiers, while set2 of 25% of the instances is used for the wk-fnn tests; ▪ set1 is then divided into two groups of instances: 70% are used to train the classifiers and the remaining instances are used to test both the models; ▪ set2 is used for testing the opposite decisions of the classifiers – the results are passed on to the xor module; ▪ the sum of all contradicting/opposing decisions is sent to the alarm detector. in summary, 52.5% and 22.5% of instances of each daily record are used to train and test the classifiers, respectively, and 25% of the instances are used to verify the wk-fnn model. the performance of the classifiers is calculated in term of accuracy (acc). acc represents the ratio between the number of correctly classified instances to the total number of instances, given as follows [47] acc = 𝑇𝑃+𝑇𝑁 𝑇𝑃+𝑇𝑁+𝐹𝑃+𝐹𝑁 (3) a true positive (tp) result indicates that the anomaly has been correctly identified as “anomaly”. a true negative (tn) means that the ids has correctly classified the normal behavior as “normal”. a false positive (fp) indicates a misclassification of the normal behavior of the network as an “anomaly”. a false negative (fn) indicates abnormal behavior of the network that has been mistakenly assigned to the “normal” class. the accuracy results for the classifiers and the number of opposing decisions recognized by the wk-fnn model are shown in table 3. the opposing decisions are calculated for 25% of the instances from each daily record. table 3 accuracy of the classifiers and the number of opposing decisions instances accuracy [%] opposing decisions [%] opposing decisions [instances] fnn wk-nn 57278 99.3 99.5 8.08 1157 57279 99.3 99.3 3.18 456 58317 99.0 99.1 0.67 98 in table 3, the opposing decisions [instances] = 𝑠𝑢𝑚𝑜𝑢𝑡 (every binary 1 triggers an alert), and the ratio of the number of opposing decisions and the total number of decisions (anomaly score) is given with the opposing decisions [%] = 𝑠𝑢𝑚𝑜𝑢𝑡 𝑙𝑒𝑛𝑔𝑡ℎ(𝑑𝑎𝑡𝑎𝑠𝑒𝑡) ∙ 100%. it can be wk-fnn design for detection of anomalies in the computer network traffic seen that there is no relationship between number of instances in the daily set and the opposing decisions. the anomaly score ranges from 0 to 10 % and is used as the threshold value for the additional alert. there are some concerns about the priorities and the percentages associated with the conflicting decision. a higher percentage of the different decisions indicates the greatest uncertainty in the classification and the incomplete knowledge of the event, which is not related only to the decision of the classifiers [48]. in general, uncertainty in decisions can arise from the following sources: (1) data errors (uncertainties about past events), (2) forecast errors (uncertainties about future events) and (3) model (residual) errors (differences between what is observed and what the model shows). the wk-fnn supports resolving the uncertainty by calculating the percentage of the opposing decisions of the classifiers, but cannot determine the probability of a certain event occurring. it is designed to provide the warning for the conflicting decisions of the classifiers. then the decision makers, knowing all the possible versions of the resolved issues use this auto-generated alert to resolve information security related issues in their organization. the alert scale presented in this paper was chosen to indicate the low probability of serious effects on network security with a small percentage of similar decisions and the high probability of an attack on the computer network with a high percentage of opposing decisions. it should be noted that there are other options for selecting the decision criteria, the threshold value ranges, and the alert colors, which can be modified depending on the additional protection requirements and the sensitivity of the information to the potential threats. in [49] multicriteria decision-making (mcdm) is presented. the authors examined the changes in the measurement scale and the formulation of criteria. in [50] the authors proposed the evaluation metrics to measure the effectiveness of collaborative decisions based on the likelihood of trust in collaborative decision-making processes. in [51] the author proposes a prioritization of alerts, which can be achieved by integrating several methods. in the experiments presented in this paper, the percentages of the opposing decisions are divided into five alert groups (see table 4). table 4 linear threshold scale and ranges of the opposing decisions threshold range [%] alert grouping and colouring opposing decisions [%] 0.67 3.18 8.08 0-1.99 negligible alert (black) 2-3.99 potential threat (blue) 4-5.99 warning (green) 6-7.99 silent alarm (orange) ≥ 8.00 high priority alarm (red) although the simple manual rules cannot always adequately capture the complex and interactive patterns of factors that influence the priority of the alerts the manual rules proposed here were used for classification of the five different priority levels. generally, the levels can be divided into three main categories: (1) errors/failures (negligible alert, potential threat), (2) warnings and (3) critical level (silent alarm, high-priority alarm) [32]. a negligible alert means that the alert is whitelisted (the lowest probability of serious effects on network security and the smallest percentage of similar decisions). the administrator can exclude certain activities which generate alerts, based on the user analytics. for the purposes of this research, the percentage of the negligible alert is used to 280 d. protić, m. stanković, v. antić be less than 2%. potential threat means that the alert may result from network disturbances and has no negative impact on business. the warning displays the known alert sources, acts as an information aggregator, provides information about the risks, and generates a hazard message. the silent alarm signals the high-level discrepancy in the decision of the classifiers and causes the ticket to be issued (the proof of authentication or authorization must be verified). a high priority alarm signals the highest probability of the attack (the highest percentage of opposing decisions). the ranking list can be adopted after a few other factors relating to the dataset (label, total number of instances) and metrics (accuracy, precision, recall), and depending on the changes to the system, new types of the alerts can be added [32]. the ranking can be combined with methods that reduce or reclassify a given list of rankings [52]. 6. conclusion this article introduces the design of a wk-fnn hybrid model that warns of opposing decisions about anomalies in the computer network. the model consists of a classification module, an xor block and a decision-making engine. in the classification module two high-precision binary classifiers work in parallel. the classifiers take into account 9 features with the normalized instances to decide whether the network traffic is abnormal or not. the results of the decisions of the classifiers are passed on to the xor block, where the exclusive or binary operation is carried out. binary 1 triggers an additional anomaly alert which is sorted into one of the predefined alert groups. the results show the presence of additional alerts related to the negligible alert, potential threat, and high-priority alarm. acknowledgement: a part of this research is presented at the 21st international arab conference on information technology, 6th of october 2020, giza, egypt. references [1] d. protic, "neural cryptography," military technical courier, vol. 64, no. 2, pp. 483–492, 2016. [2] j. sen and s. methab "machine learning applications in misuse and anomaly detection," 2009. available https://arxiv.org/ftp/arxiv/papers/2009/2009.06709.pdf. [3] d. dasgupta and h. brian, "mobile security agents for the network traffic analysis," in proceedings of the darpa information survivability conference and exposition ii discex01, 2001, vol. 2, pp. 332–340. [4] a. kind, m. p. stoecklin and x. dimitropoulos, "histogram-based traffic anomaly detection," ieee transactions on network and service management, vol. 6, no. 2, pp. 110–121, june 2009. [5] p. čisar and s. marvić čisar, "ewma statistics and fuzzy logic in function of network anomaly detection," facta universitatis, series: electronics and energetics, vol. 32, no. 2, pp. 249–265, june 2019. [6] m. h. bhuyan, d. k. bhattacharyya and j. k. kalita, "network anomaly detection: methods systems and tools," ieee communication surveys & tutorials, vol. 16, no. 1, pp. 303–336, first quarter 2014. [7] v. hodge and j. austin, "a survey on outlier detection methodologies,” artificial intelligence review, vol. 22, no. 2, pp. 85–126, 2004. [8] t. nguyen and g. armitage, "a survey of techniques for internet traffic classification using machine learning," ieee commun. surveys tutorials, vol. 10, no. 4, pp. 56–76, 2008. [9] s. omar, a. ngadi and h. h. jebur, "machine learning techniques for anomaly detection: an overview," international journal of computer applications, vol. 79, no. 2, pp. 33–41, october 2013. [10] c. jie, l. jiawei, w. shulin and y. sheng, "feature selection in machine learning: a new perspective," neurocomputing, vol. 300, pp. 70–79, 26 july 2018. https://arxiv.org/ftp/arxiv/papers/2009/2009.06709.pdf wk-fnn design for detection of anomalies in the computer network traffic [11] d. protic, "review of kdd cup ’99, nsl-kdd and kyoto 2006+ datasets," military technical courier, vol. 66, no. 3, pp. 580–595, 2018. [12] b. bohara, j. bhuyan, f. wu and j. ding, "a survey on the use of data clustering for intrusion detection system in cybersecurity," int. j. netw. secur. appl., vol. 12, no. 1, pp. 1–18, jan 2020. [13] a. thakkar and r. lohiya, "a review of the advancement int the intrusion detection datasets," international conference on computational intelligence and data science (iccids 2019), procedia computer science, vol. 167, pp. 636–645, 2020. [14] a. khraisat, i. gondal, p. vamplew and j. kamruzzaman, "survey of intrusion detection systems: techniques, datasets and challenges," cybersecurity, pp. 2–20, 2019. [15] s. khalid, t. khalil and s. nasreen, "a survey of feature selection and feature extraction techniques in machine learning," in proceedings of the 2014 science and information conference, 2014, pp. 372–378. [16] o. osanaiye, o. ogundile, f. aina anda. periola, "feature selection for intrusion detection system in a cluster-based heterogeneous wireless sensor network," facta universitatis, series: electronics and energetics, vol. 32, no. 2, pp. 315–330, june 2019. [17] m. bahrololum, e. salahi and m. khaleghi, "machine learning techniques for feature reduction in intrusion detection systems: a comparison," in proceedings of the 2009 fourth international conference on computer sciences and convergence information technology, pp. 1091-1095, 2009. [18] y. -g. cheong, k. park, h. kim, j. kim and s. hyun, "machine learning based intrusion detection systems for class imbalanced datasets," journal of the korea institute of information security and cryptology, vol. 27, no. 6, 2017, pp. 1385–1395. [19] d. protic and m. stankovic, "detection of anomalies in the computer network behaviour," european journal of engineering and formal sciences, vol. 4, no. 1, pp. 7–13, 2020. [20] ming-yang su, "real-time anomaly detection systems for denial-of-service attacks by weighted k-nearest neighbor classifier," expert systems with applications, vol. 38, no. 4, pp. 3492–3498, april 2011. [21] j. dhar, a. shukla, m. kumar and p. gupta, "a weighted mutual k-nearest neighbour for classification mining," arxiv.org. submitted on 14 may 2020. https://arxiv.org/abs/2005.08640 [cs.lg]. [22] c. callegari, s. giordano and m. pagano, "neural network based anomaly detection," in proceedings of the 2014 ieee 19th international workshop on computer aided modeling and design of communication links and networks (camad), 2014, pp. 310–314. [23] f. haddadi, s. khanchi, m. shetabi and v. derhami, "intrusion detection and attack classification using feed-forward neural network," in proceedings of the 2010 second international conference on computer and network technology, 2010, pp. 262–266. [24] b. subba, s. biswas and s. karmakar, "a neural network based system for intrusion detection and attack classification," in proceedings of the 2016 twenty second national conference on communication (ncc), 2016, pp. 1–6. [25] d. protic and m. stankovic, "а hybrid model for anomaly-based intrusion detection in complex computer networks," in proceedings of the 21st international arab conference on information technology, 6th of october 2020, giza, egypt, pp. 1–8. [26] s. k. gutam and h. om, "computational neural network regression model for host based intrusion detection system," perspectives in science, vol. 8, pp. 93–95, september 2016. [27] m. odiathevar, w. k. g. seah and m. frean, "a hybrid online offline system for network anomaly detection," in proceedings of the 2019 28th international conference on computer communications and networks (icccn), 2019, pp. 1–9. [28] l. li, y. yu, s. bai, y. hou and x. chen, "an effective two-step intrusion detection approach based on binary classification and $k$ -nn," ieee access, vol. 6, pp. 12060–12073, 2018. [29] j. griffin, "all about network alerts + best tools," by solarwinds on october 29, 2020. available https://logicalread.com/network-alerts/. [30] f. ullah and m. ali babar, "architectural tactics for big data cybersecurity analytic systems: a review," the journal of systems and software, vol. 151, pp. 81–118, 2019. [31] s. allier et al., "a framework to compare alert ranking algorithms," in proceedings of the reverse engineering (wcre), 19th working conference on. ieee, 2012. [32] n. zhao, p. jin, l. wang, x. yang, r. liu, w. zhang, k. sui and d. pei, "automatically and adaptively identifying severe alerts for online service systems," in proceedings of the infocom, 2020. [33] w. alhakami, "alerts clustering for intrusion detection systems: overview and machine learning perspectives," international journal of advanced computer science and applications, vol. 10, no. 5, pp. 573–582, 2019. [34] j. song, h. takakura, y. okabe, m. eto, d. inoue and k. nakao, "statistical analysis of honeypot data and building of kyoto 2006+ dataset for nids evaluation," in proceedings of the 1st work-shop on https://arxiv.org/abs/2005.08640 https://logicalread.com/network-alerts/ 282 d. protić, m. stanković, v. antić building anal. datasets and gathering experience returns for security, salzburg, april 10-13, 2011, pp. 29–36. [35] k. demertzis, "the bro intrusion detection system", project: machine learning to cyber security, 2018, doi: 10.31140/rg.2.2.35333.40168. [36] r. mccarthy, "network analysis with the bro security monitor," 2014, retrieved from https://www.adminmagazine.com/archive/2014/24/network-analysis-with-the-bro-network-security-monitor, 7 november 2021. [37] kdd cup ‘99 dataset. [internet] http://kdd.ics.uci.edu/dataset/kddcup’99/kddcup’99.html, 2018. [38] m. ring, s. wunderlich, d. scheuring, d. landes and a. hotho, "a survey of network-based intrusion detection data sets, " arxiv:1903.02460v2 [cs.cr] 6 jul 2019, pp. 1–17. [39] y.e maleh, "security and privacy management, techniques, and protocols," igi global, usa, 2018, pp. 266–267. [40] d. protic and m. stankovic, "anomaly-based intrusion detection: feature selection and normalization instance to the machine learning model accuracy," european journal of engineering and formal sciences, vol. 1, no. 3, pp. 43–48, 2018. [41] m. zhao and j. chen, "improvement in comparission of weighted k nearest neighbor classifiers for model selection," journal of software engineering, vol. 10, pp. 109–118, 2016. [42] m. faryaneh, "weighted k-nearest neighbors (wknn)," matlab central file exchange, https://www.mathworks.com/matlabcentral/fileexchange/74111-weighted-k-nearest-neighbors-wknn. [43] w. f. schmidt, m. a. kraaijveld and r. p. w. duin, "feed forward neural networks with random weights," the netherlands, delft university of technology, faculty of applied phisics,1992, 0-8186-2915-0/92, ieee, pp. 1–4. [44] d. protic, "feedforward neural networks: the levenberg-marquardt optimization and the optimal brain surgeon pruning," military technical courier, vol. 63, no. 3, pp. 11–28, 2015. [45] k. levenberg, "a method for the solution of certain problems in least squares," quarterly of applied mathematics, vol. 5, pp. 164–168, 1944. [46] d. marquardt, "an algorithm for least-squares estimation of nonlinear parameters," siam journal in applied mathematics, vol. 11, no. 2, pp. 431–441, 1963. [47] c. ambedkar and v. k. babu, "detection of probe attacks using machine learning techniques," international journal of research studies in computer science and engineering, vol. 2, no. 3, pp. 25–29, 2015. [48] m. kurhade and r. wankhade, "an overview on decision making under risk and uncertainty," international journal of science and research, vol. 5, no. 4, pp. 416–422, april 2016. [49] d. pamucar, d. bozanic and a. randjelovic, "multi-criteria decision-making: an example of sensitivity analysis," serbian journal of management, vol. 12, no. 1, 2017. [50] a. ramos, m. lazar, r. f. filho and j. j p. c. rodrigues, "a security metric for evaluation of collaborative intrusion detection systems in wireless sensor networks," in proceedings of the 2017 ieee international conference on communications (icc), 2017, pp. 1–6. [51] l. zomlot, "handling uncertainty in intrusion analysis,” thesis for phd, 2014. http://doi.org/10.13140/ rg.2.1.4936.4326. [52] t. h. ho, j. j. hull and s. n. sirihari, "decision combination in multiple classification systems," ieee transaction on pattern analysis and machine intelligence, vol. 16, no.1, pp. 66–75, january 1994. https://www.admin-magazine.com/archive/2014/24/network-analysis-with-the-bro-network-security-monitor https://www.admin-magazine.com/archive/2014/24/network-analysis-with-the-bro-network-security-monitor http://kdd.ics.uci.edu/dataset/kddcup’99/kddcup’99.html https://www.mathworks.com/matlabcentral/fileexchange/74111-weighted-k-nearest-neighbors-wknn http://doi.org/10.13140/%0brg.2.1.4936.4326 http://doi.org/10.13140/%0brg.2.1.4936.4326 instruction facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 103 111 doi: 10.2298/fuee1501103g thomas-fermi method for computing the electron spectrum and wave functions of highly doped quantum wires in n-si  volodymyr grimalsky, outmane oubram, svetlana koshevaya, christian castrejon-martinez ciicap and the faculty of sciences on chemistry and engineering, autonomous university of state morelos (uaem), av. universidad 1001, 62209 cuernavaca, mor., mexico abstract. the application of the thomas-fermi method to calculate the electron spectrum in quantum wells formed by highly doped n-si quantum wires is presented under finite temperatures where the many-body effects, like exchange, are taken into account. the electron potential energy is calculated initially from a single equation. then the electron energy sub-levels and the wave functions within the potential well are simulated from the schrödinger equation. for axially symmetric wave functions the shooting method has been used. two methods have been applied to solve the schrödinger equation in the case of the anisotropic effective electron mass, the variation method and the iteration procedure for the eigenvectors of the hamiltonian matrix. key words: quantum wires, thomas-fermi method, exchange, wave functions, variation method, inverse matrix iterations 1. introduction investigations of the electron spectrum of low-dimensional and highly doped structures are central to many nanotechnology applications [1,2]. quantum devices based on silicon have been the subject of a concentrated recent interest, both experimental and theoretical, including the recent proposals on quantum computing [1-4]. the infrared transitions between the electron sub-levels within -doped quantum wells are perspective for using in optoelectronics, especially for infrared modulators, detectors, and lasers [5,6]. the electron spectrum of -doped quantum wells can be calculated from solving schrödinger equation jointly with the poisson one (sp) [5,6]. there exist several difficulties for simulations of quantum structures in silicon, namely, anisotropy of the received july 8, 2014; received in revised form november 22, 2014 corresponding author: volodymyr grimalsky ciicap and the faculty of sciences on chemistry and engineering, autonomous university of state morelos (uaem), av. universidad 1001, 62209 cuernavaca, mor., mexico (e-mail: v_grim@yahoo.com) 104 v. grimalsky, o. oubram, s. koshevaya, c. castrejon-martinez effective electron mass and slow convergence of sp method in the case of an arbitrary initial approximation. the investigation of -doped quantum structures is possible with a simpler approach based on the statistical thomas-fermi (tf) method [6-8]. the preference is the separation of the complex problem into the sequential ones, where the wave functions are computed after the found solution of the potential energy. in the case of axially symmetric high doping, the electron potential energy depends of the radius only. also the combined method can be applied, where the final result of tf simulations is used as a starting one for sp [9]. moreover, a comparison between sp method and tf one shows that the simple tf method gives a good approximation for the electron energy sub-levels and the total electron concentration within the -doped quantum wells [9]. in this paper the application of the tf method to calculate the electron spectrum in the quantum wells formed by highly doped n-si quantum wires is presented under finite temperatures t, and many-body effects, like exchange, are taken into account [5,7]. the electron potential energy and the total electron concentration are calculated from a single equation solved by the newton method. then the wave functions and values of the electron energy sub-levels are computed from the schrödinger equation where two possible orientations of electron valleys are considered. the peculiarities of solving schrödinger equation in the case of the anisotropic electron mass are pointed out. 2. basic equations consider a single -doped electron quantum wire within n-si. below the atomic units are used for distances a0 * =2 /(mce 2 ) 0.52 nm and for energy ry * = e 2 /(2a0 * )  0.12 ev, where mc = 2/3 (m 2 m||) 1/3  1.06 me  10 -27 g,  = 6 is the number of the lowest electron valleys in si. in the case of n-si the lowest valleys are lateral and the effective mass is anisotropic: m||, m. with non-dimensional variables the basic equation of tf method for the -doped electron quantum wire is [8]: 1 0 1 1 ( ) 8 { [ ] (2exp( ) 1) ( )}; ( 0) 0, ( ) 0; d d d e vd dv r n v n n r r dr dr t dv r v r dr                 (1) where 3/ 2 1/ 2 1/ 3 1/ 2 1/ 2 1/ 2 0 2 17 3 1 1 0 0 1 [ ] ; 4 tanh(( / ) 1), ; 2 ( ); ( ) 0, ; 2 ( ) ; 1 exp( ) ( ) exp( ( / ) ); 10 . x c c x c d d c v vt n v t n n n n v n f n f n n n u du v u v n r n r r n cm                                  (2) here v(r) is the electrostatic electron energy, n is the total electron concentration; n1d and nd0 are 1d and 3d donor concentrations, respectively. vx is the many-body correction thomas-fermi method for computing the electron spectrum snd wave functions... 105 to the electron energy due to the exchange [7]. eq. (1) is the poisson equation for the electrostatic electron energy, where the electron concentration n[v] is calculated from the equilibrium statistical fermi distribution. note that at the 1d donor concentrations n1d0  10 21 cm -3 the exchange energy vx is comparable with the electrostatic one. the donor levels are assumed shallow and single charged. the concentration of 1d donors is high n1d0  10 20 cm -3 ; they are fully ionized. the 1d doping is localized at the distances r ~ r0  1 – 5 nm. the finite size of the highly doping region r0 is considered, because the distance unit a0 * in silicon is comparable with the size of the lattice cell. moreover, 1d doping cannot be approximated by the -function directly, because this approximation leads to the logarithmic singularity of the electron potential energy at r ~ 0. the results of simulations do not depend on the value of the critical electron concentration when nc  10 18 cm -3 . the position of the fermi level  has been obtained from the condition of the total neutrality of the semiconductor [6]: 1 0[ 0] (2exp( ) 1)d d e n v n t       (3) here ed is the donor energy with respect to the bottom of the conduction band. eq. (1) has been solved by the newton method [8]. .0|,0| )};()(][{8)( 1 )(8)( 1 ; 0 1 1            rrr d s d s s dss dr d rnvnvn dr dv r dr d r q v n v n dr d r dr d r vv       (4) note that in the derivative (n/v) the exchange correction vx does not vary. in the boundary conditions the parameter r is an enough big radius. in eq. (4) the parameter q  1 is chosen to provide better convergence [9]. the rapid convergence of the method has been demonstrated, even when the exchange energy has been taken into account. after calculation of the electron potential energy v(r), the energy sub-levels ej, the wave functions (wf) j(x,y) of the discrete spectrum of the well, and then the electron concentration n in each electron sub-level within the quantum well have been computed from the following schrödinger equations: ;])([)(ˆ )1()1()1( 2 )1(2 2 )1(2 )1( 1 jjjx jjc j evrv yxm m h         (5a) ;])([ˆ )2()2()2( 2 )2(2 || 2 )2(2 )2( 2 jjjx jcjc j evrv ym m xm m h         (5b) .)(;1)( 2/1222 yxrdxdyj       wf can be chosen as real, because the hamiltonians are real. there are two different orientations of electron valleys in silicon, as seen from eqs. (5). namely, eq. (5a) is for the isotropic case of the effective mass components, eq. (5b) is for the anisotropic case. 106 v. grimalsky, o. oubram, s. koshevaya, c. castrejon-martinez 3. simulations of potential energy and electron concentration the results of simulations of the electron potential energy v(r) and the electron concentration n(r) are presented in figs. 1,2. for all cases the volume doping is nd0 = 1·10 16 cm -3 , r0 = 2a0 *  1.04 nm. the previous simulations [10] demonstrated that the exchange correction is important for the doping levels n1d  10 21 cm -3 . but the total electron potential energy w = v + vx and the electron concentration n are practically the same as without this many-body correction. the potential energy depends on temperature t, as seen in fig. 2. this is due to the partial ionization of volume donors nd0 at low temperatures, as seen from eq. (3). but the electron concentration n does not depend on t. some difference is only at the periphery r >> r0. a) b) fig. 1 part a) is dependence of electron potential energy jointly with the exchange energy v+vx on the radius r. part b) is the dependence of the total electron concentration n(r). the values of the maximum doping are n1d0 = 310 21 cm -3 (curve 1), 10 21 cm -3 (curve 2), 310 20 cm -3 (curve 3), 510 19 cm -3 (curve 4), t = 300 k, r0 = 2a0 *  1.04 nm. the corresponding exchange energies vx are also presented there in the upper part of the part a). a) b) c) fig. 2 part a) is dependence of electron potential energy jointly with the exchange energy v+vx on the radius r for different temperatures t. part b) is the dependence of the electron concentration for different temperatures; part c) is the same as b) in details. curve 1 is for t = 300 k, 2 is for 200 k, 3 is for 150 k, 4 is for 100 k, 5 is for 50 k, 6 is for 20 k. the maximum doping is n1d0 = 310 21 cm -3 . thomas-fermi method for computing the electron spectrum snd wave functions... 107 4. wave functions and energy sub-levels after calculating the electron potential energy it is possible to simulate the electron energy sub-levels in the quantum well and the corresponding wf. to compute wf for the isotropic case (5a), where the effective masses are the same, the shooting method has been applied [11]. the axially symmetric wf (r) for the isotropic case, eq. (5a), are presented in fig. 3, a. the maximum doping level is n1d0 = 310 21 cm -3 , t = 300 k, as in fig. 1, a, curve 1. the dependence of the electron energy sub-levels, two lowest ones e1,2, on the maximum doping is presented in fig. 3, b, for t = 300 k. the dependence of the electron energy sub-levels on temperature is given in fig. 3, c. one can see that the difference e2 – e1 depends on the temperature t there. a) b) c) fig. 3 part a) is the axially symmetric wf for the case of isotropic effective mass; part b) is the dependence of the energy sub-levels on the maximum doping, t = 300 k; c) is the dependence of the energy sub-levels on the temperature t for the maximum doping n1d0 = 310 21 cm -3 . the anisotropic case, eq. (5b), with different effective masses has been solved by two simple methods, which are realized in the cartesian coordinate frame xoy. the first one is the variation method [12]. namely, the problem of the minimization of the functional of the electron energy is considered:                              dxdy dxdyh e 2 2 )( ˆ min (6) wf possesses different types of symmetry or antisymmetry in the plane xoy, due to the symmetry of the hamiltonian, eq. (5b). the probing functions for the symmetric case (±x, ±y)=(x,y) are chosen as: 2 2 1 01 01 2 2 2 2 2 02 02 02 02 exp( ( ) ( ) ); exp( ( ) ( ) )(1 ( ) ( ) ); x y x y x y x y a b x y x y           (7) 108 v. grimalsky, o. oubram, s. koshevaya, c. castrejon-martinez in the case of antisymmetry with respect to x (-x, ±y) = -(x,y) the probing functions are: );)()(1)()()(exp( );)()(exp( 2 02 2 02 2 02 2 02 2 2 01 2 01 1 y y b x x a y y x x x y y x x x   (8) analogously, it is possible to write down the probing functions for other types of symmetry or antisymmetry, i.e. with the multipliers y or xy. therefore, for the lowest wf there are two variation parameters x01, y01. for the second wf there are 3 independent variation parameters, because of the imposing orthogonality relation:        021 dxdy . (9) the second method is the search of the eigenvalues of the matrix of the hamiltonian by means of the iteration procedure [13,14]. for this purpose, wf has been expanded by the truncated fourier series. zero boundary conditions have been used at the periphery x = ±lx, y = ±ly, where the boundaries lx, ly are chosen enough large. namely, wf is represented by the vector, or the column of the coefficients of the expansion; the hamiltonian has been represented by the matrix. then the following iteration procedure has been applied [13,14]: ),( ),( ;)ˆ( 10 1 1 02 1        ss ss s ss ee eh (10) here ),( 1 ss is the scalar product of vectors, s in the number of iterations, e0 < 0 is the parameter that has been chosen from the condition of maximum convergence. usually, e0 is close to the lowest energy sub-level computed from the variation method. it is important that the matrix inversion can be realized in the simple manner, because of the diagonal domination of the shifted hamiltonian matrix )ˆ( 02 eh  . when the second wf is searched, it should be orthogonal to the first wf 1: ),/(),( 111 1 1 11   sss . after each iteration it is better to normalize the vector: .1),(  ss the initial values of the vectors  s=0 can be chosen as ones found earlier from the variation method. the iterations with the direct hamiltonian matrix )ˆ( 02 eh  diverge and cannot be applied. the profiles of wf for the two lowest sub-levels are presented in fig. 4 for the temperature t = 300 k and the maximum doping n1d0 = 310 21 cm -3 . the dependencies of the two lowest energy sub-levels in the quantum well on the maximum doping concentration for t = 300 k and on the temperature t for the maximum doping n1d0 = 310 21 cm -3 are given in fig. 5 for symmetric wf. thomas-fermi method for computing the electron spectrum snd wave functions... 109 a) b) c) d) e) f) g) h) fig. 4 wave functions computed for the case of anisotropic effective masses, t = 300 k, n1d0 = 310 21 cm -3 . part a) is the first symmetric wave function; the left panel is computed from the matrix iteration method, the right panel is from the variation method. part b) is the same for the second symmetric wave function. parts c) and d), e) and f), g) and h) are the first and the second wave functions correspondingly computed from the variation method for different types of symmetry or antisymmetry. 110 v. grimalsky, o. oubram, s. koshevaya, c. castrejon-martinez a) b) fig. 5 the dependence of two lowest energy sub-levels in the quantum well on the maximum doping concentration for t = 300 k (a) and on the temperature for n1d0 = 310 21 cm -3 (b). the case of anisotropic effective mass, eq. (5b), symmetric wf, is considered. the solid lines are the data obtained from the matrix iteration method, the dot lines are ones from the variation method. the variation method yields accurate values of the energy sub-levels. for instance, at t = 300 k and n1d0 = 310 21 cm -3 the values of the energy for the symmetric case calculated from the iteration procedure are e1 = -4.09 ry * , e2 = -1.94 ry * . the same values computed from the variation method are e1 = -4.075 ry * , e2 = -1.895 ry * . the profiles of wf are calculated from the variation method approximately; there is some difference at the periphery from those computed from the matrix iteration procedure. in the report [10] the electron spectrum has been calculated from the shooting method applied in the polar coordinate system. there is coincidence of the energy sub-levels with the data presented here, but that numerical realization of the shooting method is more complicated. the difference of the lowest energetic sub-levels e2 – e1 does not depend on the temperature for the anisotropic case, symmetric wf, see fig. 5, b. for the isotropic case, eq. (5a), this is not valid, see fig. 3, c. this can be explained by higher values of the electron sub-levels |e1,2| for the anisotropic case. it is possible to calculate wf more accurately also by means the standard simulators based on finite element methods, like comsol multiphysics [15]. 5. conclusions an application of tf method to the electron spectrum of quantum wires in n-si can be subdivided into two problems. the first one is the simulation of the electron potential energy from the simple ordinary differential equation. the iteration procedure demonstrates rapid convergence even when the many-body effects, like exchange, are taken into account. then it is possible to solve the schrödinger equations for the wave functions and the energy sub-levels. because of the anisotropy of the effective electron mass in silicon, this problem is generally two-dimensional. two simple methods have been proposed. the variation method yields accurate values of the energy sub-levels, whereas the profiles of the electron wave functions are approximate at the periphery. the method based on the inverse matrix iterations is more accurate both for the eigenvalues and the eigenfunctions. thomas-fermi method for computing the electron spectrum snd wave functions... 111 acknowledgement: the authors would like to thank to sep-conacyt (mexico) for a partial support of our work. references [1] d. w. drumm, a. budi, m. c. per, s.p. russo, and l.c. l. hollenberg. “ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon”, nanoscale research lett., vol. 8, no 1, pp. 111121, jan. 2013. [2] b. weber, s. mahapatra, h. ryu, s. lee, a. fuhrer, t. c. g. reusch, d. l. thompson, w. c. t. lee, g. klimeck, l. c. l. hollenberg, and m. y. simmons, “ohm’s law survives to the atomic scale”, science, vol. 335, no 6064, pp. 64-67, jan. 2012. [3] f. j. ruess, w. pok, t. c. g. reusch, m. j. butcher, kuan eng j. goh, l. oberbeck, g. scappucci, a. r. hamilton, and m. y. simmons, “realization of atomically controlled dopant devices in silicon”, small, vol. 3, pp. 563 – 567, apr. 2007. [4] d.k. ferry, s.m. goodnick, and jonathan bird, transport in nanostructures, cambridge: cambridge univ. press, 2009. [5] l. ramdas ram-mohan, finite element and boundary element applications in quantum mechanics, oxford: oxford university press, 2002. [6] y. fu and m. willander, physical models of semiconductor quantum devices, dordrecht: kluwer, 1999. [7] l. m. gaggero-sager, “exchange and correlation via functional of thomas-fermi in delta-doped quantum wells”, modelling simul. mater. sci. eng., vol. 9, pp. 1-5, jan. 2001. [8] v. grimalsky, l. m.gaggero-s., s.koshevaya, and a.garcia-b., “electron spectrum of -doped quantum wells by thomas – fermi method at finite temperatures”, in proc. 27th international conference on microelectronics (miel 2010), nis, serbia, 2010, pp. 119-122. [9] c. castrejon-martinez, v. grimalsky, l. m. gaggero-sager, and s. koshevaya, “combined method for simulating electron spectrum of delta-doped quantum wells in n-si with many-body corrections”, progress in electromagnetics research m, vol. 31, pp. 215-229, aug. 2013. [10] v. grimalsky, o. oubram, s. koshevaya, and c. castrejon-m., “thomas-fermi method for computing the electron spectrum of highly doped quantum wires in n-si”, in proc. 29th international conference on microelectronics (miel 2014), belgrade, serbia, 2014, paper 049. [11] v. a. ilyina and p. k. silaev, numerical methods for theoretical physicists, vol. 2, moscow: institute for computing research publ., 2004 (in russ.). [12] k. t. hecht, quantum mechanics, springer, n.y., 2000. [13] w. h. press, s.a. teukolsky, w.t. vetterling, and b.p. flannery, numerical recipes in fortran, cambridge university press, cambridge, 1997. [14] j. stoer and r. burlish, introduction to numerical analysis. n.y.: springer, 2002. [15] s. m. musa, ed., computational finite element methods in nanotechnology. boca raton, ca: crc press, 2013 (www.comsol.com). https://www.sciencemag.org/search?author1=b.+weber&sortspec=date&submit=submit https://www.sciencemag.org/search?author1=s.+mahapatra&sortspec=date&submit=submit https://www.sciencemag.org/search?author1=h.+ryu&sortspec=date&submit=submit https://www.sciencemag.org/search?author1=s.+lee&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=a.+fuhrer&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=t.+c.+g.+reusch&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=d.+l.+thompson&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=w.+c.+t.+lee&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=g.+klimeck&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=g.+klimeck&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=l.+c.+l.+hollenberg&sortspec=date&submit=submit https://archive.today/o/zfl0/http:/www.sciencemag.org/search?author1=m.+y.+simmons&sortspec=date&submit=submit http://www.comsol.com/ plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 115 130 https://doi.org/10.2298/fuee1801115b a neural network approach for the analysis of limit bearing capacity of continuous beams depending on the character of the load miloš bogdanović 1 , žarko petrović 2 , bojan milošević 3 , marina mijalković 2 , leonid stoimenov 1 1 faculty of electronic engineering, university of niš, niš, serbia 2 faculty of civil engineering and architecture, university of niš, niš, serbia 3 college of applied studies in civil engineering and geodesy, university of belgrade, belgrade, serbia abstract. being a part of civil engineering, limit state analysis represents a structural analysis with a goal of developing efficient methods to directly estimate collapse load for a particular structural model. as a theoretical foundation, limit state analysis uses a set of bound (limit) theorems. limit theorems are based on the law of conservation of energy and are used for a direct definition of the limit state function for failure by plastic collapse or by inadaptation. this study proposes an artificial neural network (ann) model in order to approximate the residual bending moment, limit and the incremental failure force of continuous beams. the neural network structure applied here is a radial-gaussian network architecture (rgin) and complementary training procedure. this structure is intended to be used for civil engineering purposes and it is demonstrated on the example of the two-span continuous beam loaded in the middle of the span that the limit and the incremental failure force can be obtained using neural network approach with sufficient precision and is especially suitable in analysis when some of the model parameters are variable. key words: continuous beam; incremental force; limit failure force; neural network; radial-gaussian network architecture 1. introduction artificial intelligence can be considered as a field of computer science often defined as “science and engineering of making intelligent machines, especially intelligent computer programs” [1]. after the 50 years of advancement, technology of artificial intelligence is applied in numerous fields: expert systems, knowledge based systems, received april 11, 2017; received in revised form june 26, 2017 corresponding author: miloš bogdanović faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: milos.bogdanovic@elfak.ni.ac.rs) 116 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov medical diagnosis, remote sensing, intelligent database system, civil engineering and natural language processing. through years of extensive advancement, delimiting artificial intelligence to a narrower field of research has proven to be capable of offering many significant capabilities and applications [2]. as an example, expert systems are marked as “the technology of knowledge management and decision making for the 21st century” [2]. a broad applicability of artificial intelligence has influenced their usage in the field of civil engineering. it is not an unusual situation for civil engineering researchers to encounter problems influenced by many uncertainties. to resolve some of these problems, civil engineering researchers relay not only on mathematics and mechanics calculations, but also on their experience and practice. however, knowledge and experience do not guarantee that the problem will be solved using traditional procedures. this is the situation where artificial intelligence expresses its supremacy by solving complex problems to the levels of experts by means of imitating experts. this is one of the main reasons why artificial intelligence has a broad application prospects in the practice of civil engineering [3]. in the practice of civil engineering, the broadest interest was shown to artificial neural networks (ann) [4 8], mainly due to their ability to process external data and information based on past experiences. artificial neural networks represent models of real world problems. anns are capable of mapping a set of given patterns to an associated set of a priori known values. they can be observed as non-linear operators that transform input patterns into another set of numerical data at its output. output values are usually gathered through repeated observations of a particular phenomenon. the ann is trained with the input data patterns to perform the transformation and to become the numerical model of the observed phenomenon. anns have the ability to learn from examples and to adapt to changing situation. also, they are capable of bidirectional mappings, e.g. mapping from cause to effect for estimation and prediction and mapping from effect to possible cause [4, 9]. neural networks can be thought of as models which try to imitate some of the learning activities of the human brain, although they are much simpler. while doing so, the internal structure of the neural operator ann remains unaltered for a variety of problems. this facilitates the usage of ann within different applications, including civil engineering applications, because it becomes enough for an application to have and suitably interpret ann input-output data pairs in order to become able to use the ann as the numerical model of the particular phenomenon. limit state analysis of structures is an analytic procedure which determines the maximum load parameter of load increment parameter, which can be sustained by an elasto-plastic structure. if the structure is exposed to the action of gradually increasing load, at some point it can surpass a certain critical value, which causes the plastic failure of the structure, after which the structure is not capable of receiving any further increase of load. this critical state is called the limit state of structure, and the load that causes it is called the limit load. determination of the bearing capacity of a structure is very valuable, not only as a simple control of beam bearing capacity, but also as a significant basis and factor in designing of structures. the beginning of the limit state analysis is related to kazincy [10], who calculated failure load of the beam fixed at both ends, and confirmed the results through experiments. even though the static theorem was first proposed by kist [11], as an intuitive axiom, it is considered that the basic theorem of limit state analysis was first announced by gvozdev [12]. the limit state analysis theorems were independently developed by hill for the stiff perfectly plastic material [13], as well as drucker, prager and greenberg [14], for elastic a neural network approach for the analysis of limit bearing capacity of continuous beams 117 perfectly plastic material. in the meantime, a formal proof of these theorems for beams and frames was derived by horne [15], as well as greenberg and prager [16]. application of limit theorems in designing of civil engineering structures was later applied by many authors among the following are prominent: symonds and neal [17]; hodge [18]; baker and heyman [19]; zyczkowski [20]; save [21]. the loading on a structure may vary considerably during its lifetime. for example, apart from dead-loading, a building frame will experience snow loads on the roof and wind loads on each face. the magnitudes of these loads at any particular instant cannot be foreseen, although their characteristic values will be known, so that the sequence of loading is unpredictable. this type of loading is termed variable repeated loading [22]. generally, the designer’s knowledge of the future loadings to which a particular structure will be exposed is usually as follows:  types of loads such as live load, wind load, water pressure, snow weight, dead weight, etc. are clearly determined;  limits of variations of load intensities of particular load types are also known as supplied by the design codes or they follow from some technological or service conditions;  actual future history of the loads, however, is not given explicitly as it is impossible to predict it. if a structure is deformed elastically, then in the presence of variable loads its strength is determined by the fatigue properties of the material; fracture occurs after a large number of cycles. but if the body experiences elastic-plastic deformation, a load less than limiting can cause the attainment of a critical state with a comparatively small number of cycles [23]. the fact that the collapse loads calculated according to limit state analysis may fail to provide a proper measure of structural safety in the case of variable repeated loads, was pointed out for the first time by grüning and bleich in 1932. in 1936 melan presented a general static shakedown theorem and later extended it to the general case of a continuum [24]. it was koiter, who formulated a general kinematical shakedown theorem [25]. in the recent years, the shakedown analysis of elasto-plastic structures has been increasingly applied in the analysis of engineering problems due to the increased demands of modern technologies. it is thus successfully applied for many engineering problems, such as designing of nuclear reactors, railways, in civil engineering designing and safety assessment of some building structures. the aim of this paper is to propose an ann model aimed to be used for civil engineering purposes in order to approximate the residual bending moment, limit and the incremental failure force of continuous beams. the neural network structure used for these purposes is radial-gaussian network architecture (rgin). the rest of the paper will be organized as follows. in section 2 we will present an overview of ann implementations in civil engineering along with basic postulates of limit and shakedown analysis. section 3 will present an analysis of the bearing capacity of continuous beams depending on the load character and degree of static indeterminacy. section 4 will describe the neural network approach used in this research along with detailed description of a neural network structure used for the approximation of the residual bending moment, limit and the incremental failure force of continuous beams. in section 5, we will present an analysis of ann generated results. the conclusion is presented in section 6 with an outlook of future work and improvement of the research presented in this paper. 118 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov 2. related work 2.1. artificial neural networks in civil engineering it seems almost impossible to review all applications of the ann in civil engineering. a vast amount of research papers presenting results in this science field was published since eighties of the twentieth century. therefore, we will present a selected part of research results with due respect for all other research results not mentioned in this section. one of the earliest applications of ann in mechanics was proposed by ghaboussi, garrett and wu [26]. they have used ann to investigate direct representation of constitutive behavior of concrete. recently, arangio and beck have developed a strategy for the estimation of the integrity of a long-suspension bridge while being influenced by ambient vibrations [27]. cachim demonstrated the usage of artificial neural networks for calculation of temperatures in timber under fire loading [28]. in this research, a multilayer feed forward network has been used to determine the temperature in the timber as the only output parameter of the neural network. liu et al. have shown the possibility of using back propagation neural networks (bpnn) as models for predicting the compressive strength of concrete [29]. evolutionary fuzzy hybrid neural network (efhnn) was used to enhance the effectiveness of assessing subcontractor performance in the construction industry. this possible usage of efhnn was demonstrated by cheng et al., with purpose of to achieving optimal mapping of input factors and subcontractor performance output [30]. wang et al. have shown a promising perspective of back-propagation neural network usage in cost estimate of construction engineering [31]. the model they presented is based on back-propagation ann trained to perform estimations on the basis of the large number of past estimation materials. their test results suggest that the developed model based on ann successfully extract the relation between the project’s features and the estimation of fabrication cost. gui et al. [32] presented a survey of structural optimization applications in civil engineering. their aim was to combine different design and development techniques (ann, expert systems, genetic algorithms) for the bridge project so that the structural design of the system can be optimized. parhi and dash have presented an analysis of the dynamic behavior of a beam structure. the analysis was performed upon a beam containing multiple transverse cracks [33]. for these purposes, neural network controller was used. authors have calculated three natural frequencies and compared results of experimental, theoretical and finite element analysis. the results of the analysis were used to train feed-forward multilayered neural network controller. after the training process was performed, this controller was capable of predicting crack locations and depths and the results of its predictions were validated against an experimental set-up. alacali, akba, and doran have presented an investigation of a confinement degree for confined concrete using neural network analysis [34]. they have established the neural network algorithm to validate the empirical equations proposed for the confinement coefficient. rahman et al. presented the estimation of local scour depth around bridge piers [35]. the estimation was performed using the multi-layer perceptron ann, ordinary kriging (ok), and inverse distance weighting (idw) models. they have evaluated results from the sixth test case. the results indicate that the ann model predicts local scour depth more accurately than the kriging and inverse distance weighting models. in [36], authors present artificial neural network based heat convection (ann-hc) algorithm. they have used an earth-to-air heat exchanger (etahe) component with aim to establish a a neural network approach for the analysis of limit bearing capacity of continuous beams 119 new thermal modeling method for cooling components. the case study they presented shows working principles of the algorithm they proposed and tested upon etahe and its environment. narasimhan presented a direct adaptive control scheme for the active control of the nonlinear highway bridge benchmark [37]. as a model, author used nonlinearly parameterized neural network. described ann contains single hidden layer and is coupled with a proportional-derivative type controller to perform approximation of control force. in this particular case, ann approximates nonlinear control law and it is not used to model the nonlinearities of the overall system. lee, lin and lu performed an assessment of highway slope failure using neural network [38]. for these purposes, they have used back-propagation neural networks and demonstrated the effectiveness of ann in the evaluation of slope failure potential based on five major factors, such as the slope gradient angle, the slope height, the cumulative precipitation, daily rainfall, and strength of materials. laflamme and connor used self-tuning gaussian networks for control of civil structures equipped with magnetorheological dampers [39]. the neural network used for these purposes is an adaptive neural network composed of gaussian radial functions. their evaluation results indicate that the neural network is effective for controlling a structure equipped with a magnetorheological damper. bilgil and altun emphasize the importance of prediction of the friction coefficient in hydraulic engineering [40]. therefore, they propose a method to estimate friction coefficient through means of ann. data used for ann training was obtained experimentally and estimates friction factor in a smooth open channel. results demonstrate ann model shows higher efficiency compared to manning approach in the given environment. as stated in [41], the civil engineering research community is still in demand for the next generation of applied anns that have to be based on sophisticated genetic coding mechanisms in order to develop the required higher-order network structures and utilize development mechanisms observed in nature. 2.2. basic postulates of limit and shakedown analysis in the area of elastic behavior of beams, the stresses and strains are proportionally dependant. due to the increase of load, there is a gradual build-up of stress, until the value of the stress in the most loaded fiber reaches the value of yield stress. the further increase of load causes plastification of the entire cross section, and thus formation of plastic hinge [22]. it is known, that in statically determinate structures, the complete plastification of one cross-section of a beam and transition of the structure into the failure mechanism means loss of load bearing capacity. in statically indeterminate structures, formation of one plastic hinge does not lead to formation of failure mechanism, and the bearing capacity of one n times statically indeterminate structures is fully exhausted when in the structure an n+1 plastic hinge is formed. if the structure is unloaded prior to formation of failure mechanism, certain residual strain occurs, which causes occurrence of residual bending moments. by applying the limit state analysis it is not possible to include the residual bending moments in the calculations. this is possible by applying the shakedown analysis. in the shakedown analysis all the assumptions of the limit state analysis are also valid, whereby this method makes possible the analysis of the behavior of the structure exposed to repeated load. 120 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov fig. 1 relation moment–curve in shakedown theory the shakedown theorem can be established for a material having the more general moment-curvature relationship of fig. 1. the basic curve (oab) is assumed to be the same whichever way the bending moment is applied, so that first yield occurs at a moment my in either sense, and the full plastic moment has value mp, again in either sense. the linear elastic range thus extends for a total 2my. the assumption is made that this range of 2my is not affected by any partially plastic deformation that might occur. thus if a moment corresponding to the value at point b in fig. 1 is applied to the cross-section, followed by unloading, then the behaviour will be linear for a total decrease of moment 2my [19]. if a structure, made of an elasto-plastic material, is exposed to variable loads, then, the following situations are possible [42]:  if the load intensities remain sufficiently low, the structural response is perfectly elastic;  if the load intensities become sufficiently high, the instantaneous load-carrying capacity of the structure becomes exhausted; plastic, unconstrained flow mechanism develops and the structures collapse;  if the plastic strain increments in each load cycle are of the same sign then, after a sufficient number of cycles, the total strains (and therefore displacements) become so large that the structure departs from its original form and becomes unserviceable. for sufficiently high load amplitude (although below the load-carrying capacity) the deflection grows in each cycle. this phenomenon is called incremental collapse;  if the strain increments change sign in every cycle, they tend to cancel each other out and the total deformation remains small (alternating plasticity). in this case, however, after a sufficient number of cycles, material at the most stressed points begins to break due to low-cycle fatigue;  it may also occur that, after some plastic deformation in the initial load cycles, the structural behavior becomes eventually elastic, for lower load amplitudes. such stabilization of plastic deformations is called shakedown or adaptation. 2.3. theorems of limit state analysis the basic theorems of limit state analysis consist of:  static theorem or the theorem of the lower border of limit load and,  kinematic theorem or the theorem of the upper border of limit load. a neural network approach for the analysis of limit bearing capacity of continuous beams 121 static theorem is based on the static equilibrium of the observed system. a large number of distributions of bending moments meeting the equilibrium conditions as a result of the given external load can be assumed for one statically indeterminate system. greenberg and prager [16] named such distribution statically admissible. if the bending moment has not exceeded the appropriate value it is claimed that it is also safe. the static theorem can be expressed in the following way: if there exists any distribution of bending moment throughout structure which is simultaneously safe and statically admissible under the load p, then the value  must be less or equal to the factor of failure load c, (c > ). the actual limit load (cp  pp) can be equal or higher than the given one. the kinematic theorem relates to the possible failure mechanism. the failure mechanism comprises a kinematically unstable system which a beam becomes after the plastic hinges are formed in the cross sections where there are conditions for this [16]. the factor of failure load c, i.e. the limit load (cp), is determined the equalizing the work of external forces with the work absorbed in plastic hinges for each assumed failure mechanism. the kinematic theorem can be expressed in the following way: for the given static system, subjected to the set of loads p, the value of  which corresponds to any assumed failure mechanism must be higher or equal to the factor of failure load c, that is, c≥. 2.4. theorems of shakedown analysis as well as in the limit state analysis, in the shakedown analysis there are static and kinematic theorems, on whose basis it is possible to determine the safe limit load depending on the type of variable repeated load. the static shakedown or melan's theorem is as follows: shakedown occurs if it is possible to find a field of fictitious residual stress ij , independent of time, such that for any variations of loads within the prescribed limits the sum of this field with the stress field * ij in a perfectly elastic body is safe (sufficient condition). shakedown cannot occur if there does not exist any time-independent field of residual stresses ij such that the sum * ijij   is admissible (necessary condition) [43]. the kinematic shakedown or koiter's theorem is as follows: shakedown does not occur if it is possible to find an admissible cycle of plastic strain rates and some programme of load variations between prescribed limits for which   vatdsxt p ijfioni )d(dd 0 00    (1) where p ijij p ija 000)(   is the rate of work of the plastic strain on the admissible rates [43]. 3. analysis of the bearing capacity of continuous beams depending on the load character and degree of static indeterminacy applying the adequate method based on upper and lower limit and shakedown analysis [44], and depending on the character of the load, an analysis of the limit load of continuous beam displayed on the fig. 2 was conducted. the span of the beams affects the distribution of internal forces, and therefore on the relevant condition of failure, that is, the value of the failure 122 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov force. on the example of the continuous beam, a procedure of the failure force calculation has been previously conducted and presented in [44], depending on the change of beam span, which is defined by the coefficients α and β, as well as depending on moment of plasticity mp. fig. 2 continuous two–span beam loaded by concentrated forces in the middle of the span the limit force of failure in one-parameter form, the incremental failure force and residual bending moment depending on the change of span length are shown in fig. 3 and fig. 4 respectively. a b fig. 3 a) change of the limit failure force depending on α and β b) change of incremental failure force depending on α and β a neural network approach for the analysis of limit bearing capacity of continuous beams 123 fig. 4 change of residual bending moment depending on α and β 4. the neural network approach the most obvious reason why ann models are gaining popularity is their ability to adapt to changing situation and to learn from a predefined set of examples. these characteristics facilitate the development of a model of the observed phenomenon is situations where there is limited theory describing the cause-effect relationship between the beam configuration and its performances (such as failure force, the incremental failure forces and the residual bending moment). also, neural networks are capable of performing fast processing which makes them particularly relevant to frame performance analysis because this type of analysis tends to be highly computationally intensive. in cases where a neural network will be applied to perform an analysis of a particular phenomenon, an issue that needs special attention is the determination of the neural network architecture and training method. there are other alternative approaches to choose from, such as ones described in [45 47]. for the analysis presented in this paper, we have adopted rgin architecture and complementary training procedure [47]. rgin architecture was chosen mainly because of its performance characteristics. rgin system is capable of produce very precise models of a function [45, 46]. it circumvents the issue of how many hidden nodes to incorporate in a network and provide the possibility to perform a rapid training process including the usage of large training sets (containing thousands of training data sets [48]). finally, if the training set is validated (e.g. there is a confirmation that the training set does not contain ambiguous data), then there is a guarantee rgin system will converge on a solution during training process. radial-gaussian networks represent a specialized form of the radial basis function (rbf) networks [49]. as illustrated in figure 5, rgins comprise three layers of neurons connected in a feed-forward manner. these networks perform mapping from a vector of inputs to a vector of outputs. vector of inputs represents the observed phenomenon, e.g. the problem that should be solved, while a vector of outputs represents the solution of the problem provided by the neural network. in this study, the input vector would represent the frame configuration, while the output vector would be an estimate of the performance of the frame, such as its the limit failure force, the incremental failure forces and the residual bending moment. 124 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov the data is passed through rgin network in single direction forward only. as the data flows through the network forward, simple processing is applied upon it. processing is applied both within the neurons and along the links connecting the neurons. the equation 2 summarizes the way of functioning of this type of network:                      i i i,jiijj,k j j k oisao 1 2 1 exp  (2) where the value of the ith element of the input vector is represented by ii; oi,j represents an offset on the connection between the ith input neuron to the jth hidden neuron; αi is a normalizing term at the ith input neuron; ak,j is an amplitude term connecting the jth hidden neuron and kth output neuron; sj is a spread term coupled with the jth hidden neuron; and ok is the output value from the kth neuron in the output layer. fig. 5 rgin neural network the process of training a rgin network is used to configure a suitable set of values for network parameters so that the ann may perform the required function. a more detailed description of rgin networks and their method of training are provided in [50]. the training scheme used for rgins training process is supervised. the network is provided with a data set of training sample problems and corresponding answers. this data set represents a mapping between input and output vectors. the network is expected to learn from these correspondences to within a predefined error tolerance. once the training process is finished, the performance of the network should be tested against a data set comprising problem samples not used within the training process. error is calculated by determining the sum of the absolute difference between the actual output given by ann and the expected output, calculated over all training data examples. a neural network approach for the analysis of limit bearing capacity of continuous beams 125 while training a rgin, hidden neurons are added (one at a time) to a middle layer in network. the ann can be thought of as implementing an overall function and every hidden neuron adds a radial-gaussian function to it. a correction term is generated by each radial-gaussian function belonging to each of the hidden neurons in the middle layer. as training process progresses, each of the three radial-gaussian function parameters, oj,i, ak,j, and sj, are adjusted. 5. discussion of the results as previously stated, ann used for the research presented in this paper a rgin and complementary training procedure [47] was adopted. the input layer consists of 4 neurons representing the structure of the two-span continuous beam loaded in the middle of the span that the residual bending moment, limit and the incremental failure force are obtained using the developed ann. in particular, these 4 neurons represent the following beam configuration parameters: l, α, β and mp. the input layer transmits information from the outside into the hidden layer and the process continues up to reach the output layer. the structure of the hidden layer is a result of the training process, as described in [47]. in our approach, it consists of 8 neurons. the output layer consists of 3 neurons representing the limit failure force, the incremental failure force and the residual bending moment. for the training and validation purposes, two sets with the same number of samples were generated (training set and validation set), each containing 233 samples. both sets were populated with data calculated according to postulates of limit and shakedown analysis. as input values, in both sets parameter l is an integer ranging from 1 to 10, parameter α is a floating-point number ranging from 1 to 10, parameter β is a floating-point number ranging from 1 to 10 and parameter mp is a floating-point value ranging from 1.5 to 75. after the training process, ann outputs were compared to the validation set (expected output calculated according to postulates of limit and shakedown analysis) and the results of the validation process for the incremental failure force, the residual bending moment and the limit failure force are displayed on figs. 6, 7 and 8, respectively. on each figure, curves that describe the change of expected (theoretical) values are shown in blue while the output generated by ann is shown in red. fig. 6 visualizes a comparison between the expected (theoretical) values compared to the values obtained using the ann in the case of incremental failure force. as shown in fig. 6, developed ann shows a high level of precision of the output results. for a majority of the samples that were subjected to validation (in particular, 68% of validation samples), the mean absolute percentage error was less than 8%. the largest discrepancy in the results was detected in the case of a training samples subset in which value of the input parameter α has a steep growth. in these cases, the precision of ann is expected to be achieved by increasing the number of training samples within this subset of training samples which will be used for the additional ann training. 126 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov fig. 6 comparison of theoretical and rgin generated results – incremental failure force fig. 7 comparison of theoretical and rgin generated results – residual bending moment a neural network approach for the analysis of limit bearing capacity of continuous beams 127 in the case of residual bending moment values validation, the obtained results are shown in figure 7. as shown in fig. 7, in this case ann outputs the highest percentage of discrepancy with the theoretical results. to adjust the network to be fully able to determine the residual bending moment, the training set should be expanded along with an increase of the number of training epochs. despite the increased results discrepancy, for 59% of the validation samples the mean absolute percentage error was less than 15%, which indicates a real opportunity to improve network quality through proposed changes. figure 8 visualizes a comparison between the expected (theoretical) values compared to the values obtained using the ann in the case of limit failure force. as shown in fig. 8, developed ann shows a high level of precision of the output results. for a majority of the samples that were subjected to validation (in particular, 68% of validation samples), the mean absolute percentage error was less than 10%. the largest discrepancy in the results was detected in the case of a training samples subset in which value of the input parameter α has a steep growth. in these cases, the precision of ann is expected to be achieved by adding additional training samples to ann training sample set in order to cover better critical parts of the input space. . fig. 8 comparison of theoretical and rgin generated results – limit failure force 128 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov 6. conclusion modern technologies applied in civil engineering are in constant demand for new solutions during the analysis of different problems. one of the widely accepted approaches used in civil engineering is the ann approach because of its ability to adapt to changing situation and to learn from example. since the shakedown analysis of elastoplastic structures has been increasingly applied in the analysis of engineering problems, the potential usage of ann approach in these analyses should be devoted significant attention. in this paper, we have proposed an annmodel in order to approximate the residual bending moment, limit and the incremental failure force of continuous beams. ann model we have developed, trained and evaluated was designed as radial-gaussian network architecture. our analysis of the developed ann model, on the example of the two-span continuous beam loaded in the middle of the span, indicates that the residual bending moment, limit and the incremental failure force can be obtained using the proposed neural network approach with sufficient precision. the proposed ann model was trained with 233 training samples calculated on the basis of theorems of limit and shakedown analysis. the testing process resulted with a mean absolute percentage error less than 15% which indicates that ann used during the test is a feasible tool for an approximation of the residual bending moment, limit and the incremental failure force of continuous beams. the presented ann model still exposes some weaknesses that could be eliminated with additional effort. in case of the approximation of residual bending moment, the accuracy of the ann model output can be improved by introducing additional training samples in the critical zones that expose the highest mean absolute percentage error. the training set modification performed in this manner would positively affect all ann aspects which will lead towards other ann outputs becoming even more precise. also, as a part of the future research and development, ann structure will be modified in terms of increasing the number of neurons in the hidden layer. we expect this change to decrease mean absolute percentage errors across the whole validation set. another possibility which will be considered in future is splitting existing ann into three anns, one for each of the estimated forces (residual bending moment, limit and the incremental failure force). it is our aim to use different ann structures for different forces to achieve better results. references [1] j. mccarthy, "what is artificial intelligence?", computer science department of stanford university, california, united states of america, 2007, available from: http://www-formal.stanford.edu/jmc/whatisai/. [2] c.t. leondes, expert systems, volume i. academic press, san diego, california 92101-4495, usa, 2002. [3] p. lu, s. chen and y. zheng, "artificial intelligence in civil engineering", mathematical problems in engineering, vol. 2012, article id 145974, pp. 22, 2012. [4] m.y. rafiq, g. bugmann and d.j. easterbrook, "neural network design for engineering applications", computers & structures, vol. 79, issue 17, pp. 1541-1552, 2001. [5] z. waszczyszyn and l. ziemianski, "neural networks in mechanics of structures and materials-new results and prospects of applications", computers & structures, vol. 79, issue 22, pp. 2261-2276, 2001. [6] n. ahmadi, r. kamyab moghadas and a. lavaei, "dynamic analysis of structures using neural networks", american journal of applied sciences, vol. 5.9, pp. 1251-1256, 2008. [7] i. lou and y. zhao, "sludge bulking prediction using principle component regression and artificial neural network", mathematical problems in engineering, article id 237693, pp. 17, 2012. a neural network approach for the analysis of limit bearing capacity of continuous beams 129 [8] e. bojórquez, j. bojórquez, s.e. ruiz and a. reyes-salazar, "prediction of inelastic response spectra using artificial neural networks", mathematical problems in engineering, article id 937480, 2012. [9] j.h. garrett, "where and why artificial neural networks are applicable in civil engineering", journal of computing in civil engineering, pp.129-130, 1994. [10] g.v. kazinczy, kiserletek befalazott tartokkal.betonszemle, 2, 1914. [11] n.c. kist, leidt een sterkteberekening, die uitgaat van de evenredigheid van kracht en vormverandering, tot een goede constructie van ijzeren bruggen en gebouwen. inaugural dissertation, polytechnic institute, delft, 1917. [12] a.a. gvozdev, "the determination of the value of the collapse load for statically indeterminate systems undergoing plastic deformation", in proceedings of the conference on plastic deformations / akademiia nauk s.s.s.r., moscow-leningrad, 1398, 19, (tr., r.m.haythornthwaite, int. j. mech.sci., 1, (1960), 332). [13] r. hill, "on the state of stress in a plastic rigid body at the yield point", philosophical magazine, vol. 42, pp. 868-875, 1951. [14] d.c. drucker, w. prager and h.j. greenberg, "extended limit design theorems for continuous media", quarterly of applied mathematics, vol. 9, pp.381-392, 1952 [15] m.r. horne, "fundamental propositions in the plastic theory of structures", journal of the institution of civil engineers, vol. 34, pp. 174-177, 1950 [16] h.j. greenberg and w. prager, "on limit design of beams and frames", transactions of the american society of civil engineers, (first published as tech. rep. a18-1, brown univ., 1949), pp.117-447, 1952. [17] b.g. neal and p.s. symonds, "the calculation of collapse loads for framed structures", journal of the institution of civil engineers, vol. 35, pp.21-40, 1950-51. [18] p.g. hodge, plastic analysis of structures, new york: mcgraw-hill, 1959. [19] j. baker and j. heyman, plastic design of frames. vol 1. fundamentals, london: cambridge university press, 1969. [20] m. zyczkowski, combined loadings in the theory of plasticity, springer netherlands, 1981. [21] m. save, atlas of limit loads of metal plates shells and disks. elsevier science bv, 1995. [22] b.g. neal, the plastic methods of structural analysis. london: chapman and hall, 1977. [23] m. jirásek and z.p. baţant, inelastic analysis of structures. john wiley & sons, 2002. [24] e. melan, "zur plastizitat des raumlichen continuum", ing. arch. vol. 9, pp.116–126, 1938. [25] w.t. koiter, general theorems for elastic–plastic solids. amsterdam: north-holland, 1960. pp. 165– 221. [26] j. ghaboussi, j.h. garrett and x. wu, "knowledge-based modeling of material behavior with neural networks", journal of engineering mechanics, vol. 117, pp.132–151, 1991. [27] s. arangio and j. beck, "bayesian neural networks for bridge integrity assessment", structural control & health monitoring, vol. 19, no. 1, pp. 3–21, 2012. [28] p.b. cachim, "using artificial neural networks for calculation of temperatures in timber under fire loading", construction and building materials, vol. 25, no. 11, pp. 4175–4180, 2011. [29] j. liu, h. li and c. he, "concrete compressive strength prediction using rebound method with artificial neural network", advanced materials research, vols. 443-444, pp. 34-39, 2012. [30] m.y. cheng, h.c. tsai and e. sudjono, "evaluating subcontractor performance using evolutionary fuzzy hybrid neural network", international journal of project management, vol. 29, no. 3, pp. 349– 356, 2011. [31] x.z. wang, x.c. duan and j.y. liu, "application of neural network in the cost estimation of highway engineering", journal of computers, vol. 5, no. 11, pp. 1762–1766, 2010. [32] x. gui, x. zheng, j. song and x. peng, "automation bridge design and structural optimization", applied mechanics and materials, vol. 63-64, pp. 457–460, 2011. [33] d.r. parhi and a.k. dash, "application of neural networks and finite elements for condition monitoring of structures", journal of mechanical engineering science, vol. 225, no. 6, pp. 1329–1339, 2011. [34] s.n. alacali, b. akba and b. doran, "prediction of lateral confinement coefficient in reinforced concrete columns using neural network simulation", applied soft computing journal, vol. 11, no. 2, pp. 2645– 2655, 2011. [35] h. rahman, k. alireza and g. reza, "application of artificial neural network, kriging, and inverse distance weighting models for estimation of scour depth around bridge pier with bed sill", journal of software engineering and applications, vol. 3, no. 10, 2010. 130 m. bogdanović, ţ. petrović, b. milošević, m. mijalković, l. stoimenov [36] j. zhang and f. haghighat, "development of artificial neural network based heat convection algorithm for thermal simulation of large rectangular cross-sectional area earth-to-air heat exchangers", energy and buildings, vol. 42, no. 4, pp. 435–440, 2010. [37] s. narasimhan, "robust direct adaptive controller for the nonlinear highway bridge benchmark", structural control health monitoring, vol. 16, pp. 599–612, 2009. [38] t.l. lee, h.m. lin and y.p. lu, "assessment of highway slope failure using neural networks", journal of zhejiang university: science a, vol. 10, no. 1, pp. 101–108, 2009. [39] s. laflamme and j.j. connor, "application of self-tuning gaussian networks for control of civil structures equipped with magnetorheological dampers", in proceedings of the spie, the international society for optical engineering, march 2009. [40] a. bilgil and h. altun, "investigation of flow resistance in smooth open channels using artificial neural networks", flow measurement and instrumentation, vol. 19, no. 6, pp. 404–408, 2008. [41] i. flood, "towards the next generation of artificial neural networks for civil engineering", advanced engineering informatics, vol. 22, no. 1, pp. 4–14, 2008. [42] a. j. konig, shakedown of elastic-plastic structures, north holland, 1987. [43] l.m. kachanov, foundations of the theory of plasticity. amsterdam-london: north-holland publishing company, 1971. [44] b. milošević, m. mijalković, ţ. petrović and m. hadţimujović, "the application of the limit analysis theorem and the adaptation theorem for determining the failure load of continuous beams", scientific tehnical review, vol 60, no 3-4, pp. 82-92, 2010. [45] n. kartam, i. flood and j. h. garrett, artificial neural networks for civil engineering: fundamentals and applications. new york: american society of civil engineering, 1997, pp. 19-43. [46] r. hecht-nielsen, neurocomputing. new york : addison-wesley, 1990. [47] c.r. alavala, fuzzy logic and neural networks: basic concepts & applications, new age international pvt ltd publishers, december 2008. [48] n. gagarin, i. flood and p. albrech, "computing truck attributes with artificial neural network", journal of computing in civil engineering, vol. 8(2), pp.179–200, 1994 [49] s. chen, c.f.n. cowan and p.m. grant, "orthogonal least squares learning algorithm for radial basis function networks", ieee transactions on neural networks, vol. 2, no. 2, 1991. [50] i. flood, "a gaussian-based feedforward network architecture and complementary training algorithm", in proceedings of international joint conference on neural networks, ieee and inns / singapore, 1991, pp. 171-176. facta universitatis series: electronics and energetics vol. 34, no 4, december 2021, pp. 483-498 https://doi.org/10.2298/fuee2104483k © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor mahdi karami1*, norman mariun2, mohd zainal abidin ab kadir2, mohd amran mohd radzi2, norhisam misron2 1department of electrical engineering, jam branch, islamic azad university, jam, iran 2department of electrical and electronic engineering, faculty of engineering, universiti putra malaysia, serdang, malaysia abstract. this article proposed a detection scheme for three-phase line start permanent magnet synchronous motor (lspmsm) under different levels of static eccentricity fault. finite element method is used to simulate the healthy and faulty lspmsm with different percentages of static eccentricity. an accurate laboratory test experiment is performed to evaluate the proposed index. effects of loading condition on lspmsm are also investigated. the fault related signatures in the stator current are identified and an effective index for lspmsm is proposed. the simulation and experimental results indicate that the low frequency components are an effective index for detection of the static eccentricity in lspmsm. key words: line start permanent magnet synchronous motor, static eccentricity, current signature analysis, finite element method, fault detection 1. introduction line start permanent magnet synchronous motor (lspmsm) is a hybrid electric motor uses the combination of induction motor (im) and permanent magnet synchronous motor (pmsm) structure through a rotor bar to provide the starting torque that conducts the motor into synchronism and permanent magnets for the generation of synchronous torque at steady state. lspmsm starts with the induction characteristic using rotor bar torque and permanent magnet opponent torque (breaking torque). so long as the velocity attains near synchronous speed, a synchronization process commences and the motor pulls to synchronous state whenever no eddy current generates into the rotor bars except harmonics field currents. lspmsms is introduced as a viable alternative to ims [1-3]. environmental considerations such as pollutions, greenhouse gases and landfills are the major issues in recent years [4] which has attracted a lot of attention for efficiency improvement of power received january 1, 2021; received in revised form september 17, 2021 corresponding author: mahdi karami department of electrical engineering, jam branch, islamic azad university, jam, iran e-mail: mehdikarami.en@gmail.com 484 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron systems and electrical machines [5,6]. unpredictable faults always create unexpected problems in electrical motors because of many stress mechanisms such as thermal, electrical, mechanical and environmental effects during the operation, that ultimately result in efficiency reduction, serious damage and breakdown. the consequent economic and security reasons justify the importance of fault detection techniques for preventive maintenance [7]. faults in lspmsms can be classified in different types as indicated in fig. 1. the mechanical faults are much possible in electrical motors which earmark 60% of the faults, while 80% of mechanical faults are due to eccentricity between stator and rotor that encourage many research efforts still devoted to the eccentricity in electrical motors. eccentricity in the lspmsm could cause a type of fault cycle proportional to eccentricity percentage lead to decrease the motor efficiency. despite the significance of eccentricity exploration in electrical motors, few researches has been reported on eccentricity fault detection in lspmsm. it is worth mentioning that type of electrical motors has significant influence on the fault detection procedures [8] and hence precise eccentricity fault diagnosis in lspmsm can guarantee their lifetime as well as keep their high efficiency performance. fig. 1 fault classification in lspmsm the initial study on static eccentricity detection in lspmsm is reported in [3]. a threephase lspmsm is modeled using the finite element method (fem). the stator current signal of lspmsm under static eccentricity condition is analyzed in frequency domain and the fault index is determined. however, the loading effect on fault detection is not considered. the investigation then continued and a cost-effective, non-invasive detection strategy is proposed for mixed eccentricity fault diagnosis in lspmsm. examination is executed through simulation and experimental works and an efficient frequency pattern as well as detection criterion is specified [9]. a mathematical model of lspmsm under static eccentricity condition is developed in [10]. the proposed model is verified using fem. the performance of eccentric lspmsm is analyzed and the time variations of stator current, speed and torque are investigated. pmsm has been simulated with eccentricity using fem to calculate the stator current signal in addition to experimental investigation [11]. barbour and thomson [12] analyzed the influence of rotor shapes on static eccentricity in im using mcsa method. fem has been employed to simulate the stator current. it was concluded that the rotor slot design has a remarkable impact on the harmonic components of stator current with static eccentricity, while semi-closed slots indicate higher increase in the presence of static eccentricity. these researchers then proved that rotor slot skewing reduces the static eccentricity harmonic components of stator current signal in im [13]. nandi et al. work on the detection of eccentricity fault in three-phase im analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 485 by measuring the high frequency harmonic components in the stator current signal [14]. the amplitude of sideband components around principle slot harmonics (psh) is examined for eccentricity detection. these researches proposed two feature formulas for detection of eccentricity fault in pmsm using mcsa. in [15] the same index as proposed in [16] has been evaluated for static eccentricity recognition in reluctance synchronous motor by predicting a proper harmonic component in the stator current signal through modeling and experimentation concepts. according to the resultant of aforementioned topics as well as the easiness and accessibility of measuring current spectrum via a current clamp, mcsa is the most accepted noninvasive technique which depends on exploring the variation of eccentricity related harmonics in the current signal of the motor. this article proposed a method to identify the static eccentricity fault signature for three-phase lspmsm. the main contribution is to examine the proposed index through the simulation and experimental analyses and determine its effectiveness. the stator current spectrum at steady state operation is used as a reference signal. a laboratory test setup is developed to measure the current signal of motor non-invasively for both healthy and faulty conditions with different degrees of fault and loading level. by the way, the stator current signal of lspmsm is calculated using fem. the simulated and measured current signals are processed in frequency domain using power spectral density (psd) technique. it is indicated that the amplitudes of fault-related components increased proportional to fault severity while they decreased at higher levels of load. 2. eccentricity fault the non-uniform air-gap distribution between stator and rotor due to displacement of one or all the rotor symmetry, stator symmetry and rotor rotation axes from the center of motor, so called eccentricity fault in electrical motors that classifies in three types as static, dynamic and mixed eccentricity. static eccentricity defines as a condition when the rotor symmetrical axis (cr) concentric with the rotor rotational axis (cg) but they are displaced with respect to the stator symmetrical axis (cs) result in a non-uniform air-gap distributes between stator and rotor where the position of minimum (and maximum) air-gap versus stator is motionless and time-independent. several stresses of forces and conditions lead to static eccentricity fault in electric motor such as shaft deflection, motor housings imperfection, wrong placement of the rotor or stator at the setup or subsequent of maintenance, elliptical stator core, incorrect bearing positioning, bearing deterioration, end-shield misalignment, excessive tolerance, rotor weight or pressure of interlocking ribbon. the consequences of static eccentricity could seriously damage the motor, specially the advanced degrees of fault. static eccentricity fault causes static unbalanced magnetic pull (ump) in the radial route across the motor, rub between rotor and stator, abnormal noise and vibration, harm the rotor and stator laminations, destroy the windings, rotor deflection, bent shaft and bearing defect. the magneto motive force (mmf) of stator shapes the non-uniform air-gap due to eccentricity by permeance harmonics into the electromotive force (emf) that induced in the rotor. the same procedure pursued for emf which is induced in the stator on the basis of the rotor mmf. thus, the air-gap flux results from permeance and mmf generates an air-gap magnetic field which composes of fundamental components, stator and rotor mmf 486 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron harmonics, stator and rotor slot permeance harmonics, eccentricity permeance harmonics and permeance harmonics of saturation. lspmsm starts to run by rotor bar torque and permanent magnet breaking torque. while the rotor rotates close to the synchronous speed, the motor is driven to synchronization and steady state operation [3]. the air-gap permeance including stator slotting permeance and smooth rotor can be calculated for lspmsm at steady state operation as follows: 𝑃𝑠𝑙 = ∑ 𝑃𝑘𝑠𝑙 cos(𝑘𝑠𝑙 𝑆1𝜃) ∞ 𝑘𝑠𝑙=0 (1) where 𝑘𝑠𝑙 is an integer value, 𝑃𝑘𝑠𝑙 is the stator slotting permeance, 𝑆1 is the stator slots and 𝜃 is the space variable. the saturation permeance of this machine is expressed as: 𝑃𝑠𝑎𝑡 = ∑ 𝑃𝑘𝑠𝑎𝑡 cos[𝑘𝑠𝑎𝑡( 2𝜔𝑡 − 2𝑃𝜃)] ∞ 𝑘𝑠𝑎𝑡=0 (2) where 𝑘𝑠𝑎𝑡 is an integer number, 𝑃𝑘𝑠𝑎𝑡 is the specific permeance of saturation, 𝑃 is the main pole pairs, ω is the angular supply frequency and t is time variable. since the non-concentric air-gap in static eccentricity is time invariant the permeance due to this fault considering smooth rotor and stator will be: 𝑃𝑆𝐸 = ∑ 𝑃𝑘𝑆𝐸 cos(𝑘𝑆𝐸 𝜃) ∞ 𝑘𝑆𝐸=0 (3) where 𝑘𝑆𝐸 is an integer number and 𝑃𝑘𝑆𝐸 is the specific permeance related to static eccentricity. accordingly, the total permeance can be computed with the following expression: 𝑃𝑇(𝑡) = ∑ ∑ ∑ 𝑃𝑘𝑠𝑙,𝑘𝑠𝑎𝑡,𝑘𝑆𝐸 cos[±( 2𝑘𝑠𝑎𝑡 𝑃 )𝜔𝑡 ∞ 𝑘𝑆𝐸=0 ∞ 𝑘𝑠𝑎𝑡=0 ∞ 𝑘𝑠𝑙=0 +(𝑘𝑠𝑙𝑆1 ± 2𝑘𝑠𝑎𝑡𝑃 ± 𝑘𝑆𝐸)𝜃] (4) then, the air-gap flux density of lspmsm at steady state can be calculated utilizing ampere’s circuital principle as: 𝐵(𝑡) = 𝑃𝑇(𝑡) ∫ 𝜇0𝑗𝑠(𝜃, 𝑡)𝑑𝜃 (5) where 𝜇0 is the vacuum permeability and 𝑗𝑠 is the current density of stator interior surface. 𝑗𝑠(𝜃, 𝑡) = ∑ 𝐽𝑠 sin(𝑘𝑗𝜔𝑡 − 𝑃𝜃)] ∞ 𝑘𝑗=1 (6) where 𝑘𝑗 is an integer number. substituting expression (4) and (5) results in: analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 487 𝐵(𝑡) = 𝜇0𝐽𝑠 𝑃 ∑ cos(𝑘𝑗𝜔𝑡 − 𝑃𝜃) ∞ 𝑘𝑗=1 ∑ ∑ ∑ 𝑃𝑘𝑠𝑙,𝑘𝑠𝑎𝑡,𝑘𝑆𝐸 ∞ 𝑘𝑆𝐸=0 ∞ 𝑘𝑠𝑎𝑡=0 ∞ 𝑘𝑠𝑙=0 × cos[±( 2𝑘𝑠𝑎𝑡 𝑃 )𝜔𝑡 + (𝑘𝑠𝑙𝑆1 ± 2𝑘𝑠𝑎𝑡𝑃 ± 𝑘𝑆𝐸)𝜃] (7) expression (7) can be rewritten in the following form: 𝐵(𝑡) = 𝜇0𝐽𝑠𝑃𝑘𝑠𝑙,𝑘𝑠𝑎𝑡,𝑘𝑆𝐸 𝑃 ∑ ∑ ∑ cos[(𝑘𝑗 ± ( 2𝑘𝑠𝑎𝑡 𝑃 ))𝜔𝑡 ∞ 𝑘𝑆𝐸=0 ∞ 𝑘𝑠𝑎𝑡=0 ∞ 𝑘𝑠𝑙=0 + (±𝑘𝑠𝑙𝑆1 ± 2𝑘𝑠𝑎𝑡𝑃 ± 𝑘𝑆𝐸 − 𝑃)𝜃] (8) eventually, expression (8) can be finalized as follows: 𝐵(𝑡) = ∑ 𝐵, cos[(𝑘𝑗 ± (  𝑃 ))𝜔𝑡 ± 𝜃] , (9)  = 2𝑘𝑠𝑎𝑡  = ±𝑘𝑠𝑙𝜃 ± 2𝑘𝑠𝑎𝑡𝑃 ± 𝑘𝑆𝐸𝜃 − 𝑃𝜃 the mmf of the stator is expressed as: 𝐹𝑠 = 𝐵(𝑡) 𝑃𝑇(𝑡) (10) the stator current involving space and time harmonics is as follows: 𝑖(𝑡) = ∑ 𝐼, cos[( , 𝑘𝑗 ± (  𝑝 ))ωt ± 𝜃] (11) expression (11) is simplified for sinusoidal supply voltage as: 𝑖(𝑡) = ∑ 𝐼, cos[( , 1 ± (  𝑝 ))ωt ± 𝜃] (12) where  = 1, 3, 5, ... . 3. experimental setup the experimental test rig is shown in fig. 2(a). the characteristics of lspmsm for both healthy and faulty cases is a 1-hp, 4-pole, three-phase lspmsm with the specification as mentioned in table 1. the motor is directly fed by the grid power supply while the stator windings are y connected and the current nominal value is 1.28 a. the lspmsm is coupled to torque/speed sensor in order to measure the torque value in different operation condition. on the other side, a mechanical load has been provided by a dc-excited magnetic powder 488 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron brake (mpb) coupled to torque/speed sensor. the specific load torque level could be furnished to the motor shaft by controlling the input dc voltage of mpb. there are some advantages to use mpb instead of generator for mechanical load such as stability of load torque value. the schematic of test rig is displayed in fig. 2(b). this shows a brief information about the lspmsm, mpb, current transducer and data acquisition system. this system is used to sample the stator current noninvasively while the motor operated in the steady state condition. the stator current is measured using current probe model pico-pp264 and data acquisition carried out by picoscope 4424 which is a high resolution usb-connected system including an industry-leading signal acquisition path, provides 80 ms/s adc on each channel with 1% accuracy. only one phase current signal is required to be recorded for detection process. the recorded signals are analyzed by a computer-based signal processing program. (a) (b) fig. 2 (a) experimental test rig (b) schematic view of system analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 489 table 1 specification of three-phase lspmsm rated output power (hp) 1 rated voltage (v) 415 rated frequency (hz) 50 number of poles 4 rated speed (rpm) 1500 connection y air-gap length (mm) 0.30 remanent flux density of magnets (t) 1.235 3.1. noninvasive implementation of static eccentricity in three-phase lspmsm hitherto, different approaches have been proposed to beget eccentricity fault in im and pmsm for the purpose of fault diagnosis. some of the introduced approaches invasively modify the configuration of motor and damage it permanently. in some cases, changing the fault severity is impossible while others require accurate measuring device to specify the fault percentage. this noninvasive method makes the lspmsm temporarily eccentric without any costly measuring device while the fault severity can be easily changed and after all, motor returned to the normal condition for further usage. accordingly, the original bearings of lspmsm are changed by a new set of bearing with larger inner diameter and smaller outer diameter result in creation of free space between the shaft and bearings and also between the bearings and the housing of end shields. the fault can be created by filling these free spaces with special-made concentric or non-concentric inner and outer rings. a specific screw is applied to prevent sliding of inner ring on the rotor shaft and inside the bearing. meanwhile, a particular slot is made for outer ring to fix it properly in the housing. the protective layers are designed for inner ring to keep the outer ring inside the housing at any probabilistic misalignment and to avoid friction and scrubbing between the inner ring and bearing or outer ring. the prototype of eccentricity simulation strategy is shown in fig. 3. fig. 3 inner, outer rings and new bearing before and after assembly 490 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron static eccentricity is created by fixing the concentric inner rings between the new bearings and shaft on both ends of lspmsm and non-concentric outer rings between the new bearings and housings of both end shields. the non-concentric outer ring is made via offset the center of ring based on the specific measures, so the severity of static eccentricity can be varied by fixing the outer rings with different values of offset. this strategy is followed to create 20%, 35% and 50% static eccentricity in lspmsm. 4. fem based simulation of three-phase lspmsm fem based analysis provides an accurate tool for modeling of electrical motors since it includes material characteristic, nonlinearity and complexities. the reliability and accuracy of fem for analyzing the electric motor performance is more than other method such as winding function theory (wft). fem is a precise method because the inductances can be directly calculated by field analysis which leads to various conditions such as slot effects, saturation and etc. to be spontaneously taken into account [9]. the three-phase lspmsm is simulated in 2-d environment based on fem utilizing maxwell 2-d software to calculate the stator current spectrum with eccentricity effect. the simulations are performed at the same condition of the experimental study such as motor specification, static eccentricity percentages, sampling frequency, sampling time and frequency resolution. the geometrical and physical complexities of lspmsm like stator, hybrid rotor and shaft, stator winding distribution, non-uniform permeance of air-gap due to eccentricity, nonlinear characteristics of stator and rotor cores and permanent magnets materials are considered for modeling study. the 2-d model of lspmsm is described in fig. 4. (a) (b) fig. 4 cross-section of three-phase lspmsm: (a) geometric configurations and (b) plotting of the mesh three-phase sinusoidal voltage is injected to stator windings. a solver with time integration method based on backward euler is employed to solve the steady state current of lspmsm. magnetic field distribution in lspmsm is calculated by fem and the stator current signal is computed. the proposed lspmsm is simulated with different degrees of static eccentricity by shifting the center of rotor from the center of stator while the rotor rotates concentrically with its own center as mentioned in section 2. the non-uniform air analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 491 gap magnetic field due to static eccentricity in lspmsm produces asymmetrical current, torque and speed. several harmonic components will be manifested in magnetic flux, stator current of the motor. detection of the harmonic components in stator current will nominate a precise fault signature for static eccentricity diagnosis in lspmsm. 5. stator current signature analysis in three-phase lspmsm investigation of static eccentricity fault detection in lspmsm is pursued by analyzing the stationary spectrum of stator current in frequency domain applying power spectral density (psd) technique. current spectrum is stored with the sampling frequency of 5 khz over a total sampling time of 6.5 s which allows the analysis of the signals with a minimum frequency of 0.15 hz. in order to evaluate the static eccentricity at early stages, the lower degree of fault is also considered. the inherent eccentricity up to 10% normally disregards in electrical motors [2]. flowchart of rotor asymmetry fault analysis is displayed in fig. 5. in particular, two different configurations are tested in this study such as: 1. healthy lspmsm (0% static eccentricity) 2. lspmsm with 20, 35 and 50% static eccentricity fig. 5 flowchart of static eccentricity detection strategy for lspmsm 492 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron the time variation of simulated and measured steady state current signal for three-phase lspmsm in healthy condition and under static eccentricity at full load operation is indicated in fig. 6. the effect of static eccentricity is intangible in time variation of current signal. the amplitude of sideband components around fundamental frequency which is extracted by signal processing of the stator current in frequency domain can be used for precise eccentricity fault detection. harmonics of controllers always have influenced on the previous eccentricity detection methods in synchronous motors. due to unique property of lspmsms, the purpose of this research is to study the motor behavior under the static eccentricity condition without any driver. (a) (b) fig. 6 the stator current signal of lspmsm: (a) healthy condition (b) with 50% static eccentricity this article is dedicated to identify an index for eccentricity fault detection based on mcsa. the normalized line current spectra of lspmsm at healthy condition and with 20% static eccentricity are displayed in fig. 7. comparison between healthy and faulty conditions with 20% static eccentricity shows increment in the amplitude of harmonic components around fundamental frequency. low percentage of static eccentricity generates harmonic components at frequencies of 25 hz, 75 hz and 125 hz in the stator current. the visibility of these harmonics is prominent to nominate them as static eccentricity fault signature for incipient detection and maintenance analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 493 procedure in lspmsms. despite the eccentricity-related harmonics, the main field also generates harmonics because of associated rotating force wave at frequencies 50 hz, 100 hz, 150 hz, 200 hz and etc., while the amplitude of main field harmonics is superior to the eccentricity components so the eccentricity components at frequencies 50 hz, 100 hz, etc. is negligible. (a) (b) (c) fig. 7 psd spectra of current signal for: (a) healthy lspmsm (b) simulation result of 20% static eccentricity (c) experimental result of 20% static eccentricity 494 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron accordingly, the nominated signatures can be effective for lspmsm in order to detect the static eccentricity at early stages. it is derived from the results that the following index can be introduced as an appropriate frequency pattern to pinpoint the static eccentricity related signatures in three-phase lspmsm. 𝑓𝑠𝑡𝑎𝑡𝑖𝑐 = [1 ±  𝑝 ] 𝑓 (13) where 𝑓𝑠𝑡𝑎𝑡𝑖𝑐 is the harmonic components due to static eccentricity in lspmsm,  is an odd integer value, 𝑝 is the number of pole pair and 𝑓 is the fundamental frequency. proposed index can be used to detect the static eccentricity in lspmsms with different number of pole pairs due to variable 𝑝 in expression (13). investigation on the influence of fault severity percentage in current signal is a significant issue in order to estimate the ability of proposed index. the psd of stator current spectrum for lspmsm with 35% and 50% static eccentricity are demonstrated in fig. 8 and fig. 9, respectively. (a) (b) fig. 8 psd spectrum of current signal with 35% static eccentricity: (a) simulation result (b) experimental result fig. 8 exposes a remarkable rise of the amplitudes of harmonic components due to 35% static eccentricity at nominated frequencies. this incremental rate of amplitudes proofs the ability of expression (13) to detect the static eccentricity and its degree. on the other hand, analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 495 comparison between fig. 7 and fig. 8 illustrates that amplitudes of harmonic components are increased while the static eccentricity degree changed from 20% to 35%. psd spectrum of stator current in fig. 9 indicates that the amplitude of harmonic components at low frequencies further increases due to 50% fault severity. the static eccentricity degree of 50% increases the amplitude of 25 hz to -36 db, 75 hz to -40 db and 125 hz to -44 db that are significantly far from the amplitudes of these components at healthy condition as well as faulty condition with 20% and 35% of static eccentricity. thus, the amplitudes of harmonic components at frequencies which determined by expression (14) are a suitable index for detection of static eccentricity fault in three-phase lspmsm. by the way, the proposed feature is capable to be used for predicting the static eccentricity degree in this type of motor. fig. 9 psd spectrum of current signal with 50% static eccentricity: (a) simulation result (b) experimental result the evaluation of proposed index for various loading levels and fault severity are summarized in table 2. these amplitudes increase as a function of fault severity and vary in a subtractive manner proportional to load level. effect of load variation on amplitudes of eccentricity-related harmonics depends on the type of electrical motor. amplitudes of eccentricity-related harmonics in pmsm remain constant versus load variation at fixed degrees of fault [8]. despite the similarity of pmsm and lspmsm as a synchronous motor but their reactions to static eccentricity fault are not the same due to their different configurations. this observation again demonstrates the importance of motor type in fault detection process. a comparison between the proposed method and previous techniques is summarized in table 3. 496 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron table 2 amplitudes of harmonic components in current spectrum of lspmsm index load (%) static eccentricity degree (%) simulation result (db) experimental result (db) 0% 20% 35% 50% 0% 20% 35% 50% [1 − 1 𝑝 ] 𝑓 0 -46 -42 -42 -40 -49 -44 -45 -41 20 -47 -40 -39 -35 -44 -34 -32 -30 60 -50 -45 -43 -40 -46 -42 -37 -35 100 -55 -50 -45 -43 -68 -47 -43 -36 [1 + 1 𝑝 ] 𝑓 0 -48 -44 -43 -40 -52 -48 -45 -42 20 -50 -40 -37 -32 -53 -41 -39 -34 60 -51 -49 -44 -42 -53 -46 -40 -46 100 -54 -52 -49 -47 -57 -53 -46 -40 [1 + 3 𝑝 ] 𝑓 0 -52 -46 -43 -41 -61 -48 -45 -44 20 -55 -47 -40 -39 -63 -51 -42 -38 60 -59 -50 -46 -43 -66 -55 -44 -41 100 -63 -58 -59 -46 72 -56 -58 -44 table 3 comparison between eccentricity detection methods ref. monitoring technique motor type fault type achievement [3] current lspmsm static eccentricity ▪ a simulation study has been done. ▪ an index has been proposed for fault detection. ▪ loading condition is not considered. ▪ the method is not examined experimentally. [10] current, speed, torque lspmsm static eccentricity ▪ motor performance has been analyzed under healthy and faulty condition. ▪ mathematical and simulation studies are performed. ▪ no index has been proposed for detection. [11] current pmsm static and dynamic eccentricity ▪ a simulation and experimental examination has been done. ▪ specific frequencies under different loading levels have been analyzed. [12] & [13] current im static eccentricity ▪ effect of rotor shapes on fault related features in im has been investigated. ▪ it has been shown that rotor slot skewing reduces the fault-related components. analysis of rotor asymmetry fault in three-phase line start permanent magnet synchronous motor 497 6. conclusions the stator current spectrum of lspmsm at both healthy and faulty condition during its steady state operation was examined to identify the features of static eccentricity and propose an index for precise fault detection at early stage. the stator current signal of motor was measured noninvasively. different degrees of static eccentricity were created in the motor by a noninvasive method and then the motor returned to the healthy condition for continuing its normal operation. a three-phase lspmsm was simulated using fem with the same conditions of the laboratory test such as motor specification, static eccentricity percentages, sampling frequency, sampling time and frequency resolution. the effects of static eccentricity on the harmonic content of stator current spectrum were scrutinized in frequency domain utilizing psd analysis to propose a criterion for fault detection in this hybrid type of electrical motors. it is concluded that the low frequency components are the accurate signatures for static eccentricity in lspmsm which can be specified by frequency pattern [1 ± /𝑝]𝑓as an index for this fault. the higher degrees of fault increase the amplitude of these components which can be utilized to estimate the degree of static eccentricity. in an opposite manner, higher levels of load reduce the amplitudes of eccentricity-related components in the stator current. accordingly, this frequency pattern is reliable for static eccentricity detection at early stage. acknowledgements: the authors would like to express their gratitude to ministry of education malaysia for financial support through grant number frgs-5524356 and universiti putra malaysia for the facilities provided during this research work references [1] v. šarac, "line-start synchronous motor a viable alternative to asynchronous motor", facta univ., series: automat. control robot., vol. 19, pp. 39-58, july 2020. [2] m. karami, n. mariun, m. r. mehrjou, m. z. a. ab kadir, n. misron and m. a. m. radzi, "diagnosis of static eccentricity fault in line start permanent magnet synchronous motor", in ieee proceedings of international conference on power and energy, december 2014, pp. 83-86. [3] m. karami, n. mariun, m. r. mehrjou, m. z. a. ab kadir, n. misron and m. a. m. radzi, "static eccentricity fault recognition in three-phase line start permanent magnet synchronous motor using finite element method", math. probl. eng., vol. 2014, pp. 1-12, nov. 2014. [4] a. nochian, o. mohd tahir, s. mualan and d. rui, "toward sustainable development of a landfill: landfill to landscape or landscape along with landfll? a review", pertanika j. soc. sci. humanit., vol. 27, no. 2, pp. 949-969, 2019. [5] m. karami, n. mariun, m. a. m. radzi and g. varamini, "intelligent stability margin improvement using series and shunt controllers", int. j. appl. power eng. (ijape), vol. 10, no. 4, pp. 281-290, 2021. [6] f. rahmani, m. s. mashhadi, h. gh. lamouki, f. asghari, h. shokouhandeh and m. amoozadeh, "maximum power point tracking–a study of photovoltaic systems in supplying stand-alone and gridconnected electrical loads", in ieee proceedings of international conference on applied and theoretical electricity, may 2021, pp. 1-6. [7] j. faiz, t. asefi and m. azeem khan, "design of dual rotor axial flux permanent magnet generators with ferrite and rare-earth magnets", facta univ. series: elec. energ., vol. 33, pp. 553-569, 2020. [8] b. m. ebrahimi and j. faiz, b. n araabi, "pattern identification for eccentricity fault diagnosis in permanent magnet synchronous motors using stator current monitoring" iet electric power applications, vol. 4, pp. 418–430, 2010. [9] m. karami, n. b. mariun, m. z. a. ab-kadir, n. misron and m. a. m. radzi, "motor current signature analysis-based noninvasive recognition of mixed eccentricity fault in line start permanent magnet synchronous motor", electr. power compon. syst., vol. 49, no. 1-2, pp. 133-145, june 2021. 498 m. karami, n. mariun, m. z. a. ab kadir, m. a. mohd radzi, n. misron [10] i. hussein, z. al-hamouz, m. a. abido and a. milhem, "on the mathematical modeling of line-start permanent magnet synchronous motors under static eccentricity", energies, vol. 11, pp. 1-17, jan. 2018. [11] w. le roux, r. g. harley and t. g. habetler, "detecting rotor faults in low power permanent magnet synchronous machines", ieee trans. power elec., vol. 22, pp. 322–328, jan. 2007. [12] a. barbour and w. t. thomson, "finite element study of rotor slot designs with respect to current monitoring for detecting static airgap eccentricity in squirrel-cage induction motors", in ias ’97. conference record of the 1997 ieee industry applications conference thirty-second ias annual meeting, 1997, vol. 1, pp. 112–119. [13] w. t. thomson and a. barbour, "on-line current monitoring and application of a finite element method to predict the level of static airgap eccentricity in three-phase induction motors", ieee trans. energy conv., vol. 13, pp. 347–357, dec. 1998. [14] s. nandi, s. ahmed and h. toliyat, "detection of rotor slot and other eccentricity related harmonics in a three phase induction motor with different rotor cages", ieee trans. energy conv., vol. 16, pp. 253– 260, sep. 2001. [15] t. c. ilamparithi and s. nandi, "detection of eccentricity faults in three-phase reluctance synchronous motor", ieee trans. ind. appl., vol. 48, pp. 1307–1317, may 2012. [16] w. le roux, r. g. harley and t. g. habetler, "detecting rotor faults in low power permanent magnet synchronous machines", ieee trans. power elec., vol. 22, pp. 322–328, jan. 2007. instruction facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 653 674 doi: 10.2298/fuee1604653p high performance digital current control in three phase electrical drives  ljiljana s. peric, slobodan n. vukosavic university of belgrade, dept. of electrical engineering, belgrade, serbia abstract. majority of contemporary static power converters makes use of three-phase, pwm controlled igbt inverters. typical applications include electrical drives and grid connected converters. in both cases, a high closed loop bandwidth is highly desirable. the bandwidth is constrained by the problems of the feedback acquisition. the feedback errors are caused by the noise, parasitic phenomena and by the current ripple at the pwm frequency. the errors can be reduced by considering deriving the average value of the output current within the past pwm period. this feedback acquisition method reduces the noise, but it also introduces delay into the feedback lines. along with delays brought in by digital pwm, the feedback delay reduces the range of stable gains and limits the closed loop bandwidth. effects of the delay can be reduced by conveniently placing the control interrupt and adopting an optimum parameter setting which meets both the bandwidth requirements and the robustness against the noise and the parameter changes. experimental verification proves that the proposed current controller achieves the response speed and the robustness against the noise which outperforms the competitive solutions. key words: current control, high-performance control, signal acquisition, ac motor drives, three phase inverters 1. introduction electrical drives are frequently used to control the speed or the position of the work piece or the tool. in such cases, the speed and position controllers are used as the outer control loop, which provide the torque reference. the later determines desired currents that have to be injected into the stator windings in order to obtain the desired torque. digital current controllers are the inner loop of the drive, [1], [2]. the bandwidth of the current loop determines the torque response time. therefore, it determines the overall performance of the drive [3], [4], such as the closed loop bandwidth of the speed or position loop. for the proper operation of the drive, it is essential to decouple the flux control loop and the torque control loop. the basic prerequisite for the decoupled flux and torque control is a fast and robust current controller [5]-[7]. in high speed drives, the received august 28, 2015; received in revised form november 13, 2015 corresponding author: slobodan n. vukosavic university of belgrade, dept. of electrical engineering, 11000 belgrade, serbia (email: boban@ieee.org) 654 lj. s. peric, s. n. vukosavic fundamental frequency ff of the stator currents and voltages can reach considerable values. in some cases, ff can reach a considerable fraction of the sampling frequency fspl of the current controller [8]-[11]. in such cases, it is of particular importance to have a high closed loop bandwidth of the digital current controller. although the objective of this paper is to maximize the closed loop performances in the presence of delays, and it is reasonable to expect that the devised control measures would also improve the closed loop performances with very high fundamental-to-switching-frequency ratios, we did not discuss nor did we verify such performances in this paper. a high bandwidth of the current controller is also important in grid-connected static power converters, such as the three phase inverters that regenerate into the grid, used in conjunction with wind-power plants and solar-power plants. in order to inject undistorted, sinusoidal currents into the grid, the closed loop current controllers have to overcome the nonlinearities such as the lockout time, reduce the line harmonics, and to secure a very low factor of total harmonic distortions (thd). for this to achieve, digital current controllers should have a quick response and a high disturbance rejection. several imperfections and nonlinearities make this requirement difficult to achieve. performance enhancement requires the proper modeling and accounting for such imperfections and nonlinearities [8], [10], [11]. certain popularity is gained by the dead-beat and predictive controllers [13], due to their capacity to cope with transport delays, but their wider use is hindered by pronounced sensitivity to changes in system parameters. digital current controllers are frequently located in synchronous dq frame. this is done in order to achieve constant steady-state references, instead of sinusoidal steady-state references, that would have to be tracked with the controllers located in stationary coordinate frame. synchronous controllers have the possibility to achieve the steady state performance with zero phase error and zero amplitude error. controller structure includes proportional and integral action. when used with elevated fundamental frequencies ff, the current controller has to be enhanced by the dq decoupling actions [10], [11], [14]. in cases where the pwm delays and imperfections are negligible, and where the current ripple does not impair the feedback acquisition process, conventional pi controllers can be tuned by using well known tuning procedures [11], [12], [14], derived by applying the imc concept [5]. neglecting the imperfections, the synchronous frame current controllers can reach the bandwidth frequency of 0.11∙fspl. with stationary frame controllers, it is possible to achieve the bandwidth frequency of 0.07∙fspl [12]. in cases where the pwm ripple of the output current is not negligible, as well as in cases where the pwm delays and lockout time delays impair the sampling process and contribute to parasitic alias components, it is not possible to use the conventional structure and parameter setting of digital current controllers. the current controller designed in this paper reduces the sampling errors by taking the average value of the feedback signals over the past pwm period. in essence, the well known technique of oversampling is applied within the current controller environment, paced by the pwm carrier, and implemented on an industrial dsp as a time-skewed onepwm-period-averaging. the method uses an automated, dma-driven oversampling. the feedback signal is calculated from a large number of equally spaced samples collected within the past two sampling periods. with double-update mode, the two sampling periods correspond to one pwm period. although this approach reduces the feedback errors caused by the noise and the ripple, it also introduces delay into the feedback lines. the feedback delay adds to the delay contributed by the digital pwm. in a conventional high performance digital current control in three phase electrical drives 655 implementation, where the control interrupt gets triggered by the zero-count and the period-count of the pwm carrier, the equivalent transport delay encountered with the proposed one-pwm-period-averaging reaches 2.5 sampling periods, thus reducing the range of stable gains and limiting the closed loop bandwidth. effects of the delay can be reduced by conveniently shifting the control interrupt and adopting an optimum parameter setting which meets both the bandwidth requirements and the robustness against the noise and the parameter changes. in order to deal with transport delays in digital current controllers, and to provide and error-free feedback acquisition, the authors recently designed and tested several solutions. the most important previous results are given in [20] and [21]. as well as this paper, [20], [21] deal with digital current controllers. therefore, it is of interest to clarify what has been done in [20], [21], and what is the contribution proposed in this paper. in [20], delay compensation is performed by introducing a differential control action with the proper d-gain setting. in this paper, we took a different approach. we do not use the differential action. instead, we rely on the time-skewed acquisition window of fig. 9, which permits rescheduling of the interrupt as an effective way of coping with delays. it is also of interest to compare the feedback acquisition technique used in [20], [21], and in this paper. the approach used in this paper is similar, but not identical to the one used in [20], while the approach of [21] is quite different than both. in [20], the impact of the lockout time, the motor cable capacitance and the switching noise on the feedback errors incurred with conventional regular-sampling-double-update approach are experimentally verified, suggesting the need for the use of the oversampling. thorough experimental evidence of [20] is obtained with variable length of the motor cable, and it proves that the pwm-period-based oversampling and decimation results in considerable reduction of the sampling errors. the method is coined into one-pwm-period-averaging, and it takes the average of the samples acquired within one tpwm window encircled by the interrupt ticks. while the method used in this paper also uses the oversampling-decimation, the current samples are acquired within a different acquisition window. in fig. 9, the new acquisition window is shifted by texe with respect to the interrupt ticks. the time shift texe corresponds to the execution time of the control interrupt. the skew between the corresponding sampling windows can be observed by comparing [20, fig. 5] and fig. 9. in [21], the authors deal with the current controllers which do not use the oversampling/ decimation, but rely instead on the conventional regular-sampling-double-update approach. this approach is applicable to noise-free sampling cases, such as the one where the inverter is integrated within the motor housing. the structure of the current controller of [21] uses p, i, and d actions, and it is different that the controller considered in this paper. in [21], the parameter setting deals with the three gains, and it takes into account the controller capability to suppress the impact of the electromotive-force disturbances. in this paper, the parameter setting focuses on p and i gains, and it does not consider the disturbance rejection capability. the objective of parameter setting rules in [21, page 7, criterion function q] is different than the objective of the parameter setting rules in section 5 of this paper. the former results in an optimum p-i-d gains, while the later deals with a p-i controller and it searches for the optimum p gain while maintaining a constant p/i ratio. the feedback acquisition technique, the structure of the current controller, and the goal of the parameter setting procedure in [21] are different that those proposed in this paper. this paper is organized as follows. the system with three phase igbt-based inverter, the typical load and the digital controller are reinstated in section 2. the feedback 656 lj. s. peric, s. n. vukosavic acquisition system is discussed in section 3, with the proposal of the error-free sampling scheme which operates with a minimum indispensable delay. in section 4, the two competitive structures of the digital current controller are analyzed and discussed. the optimum parameter setting is proposed in section 5, focused of achieving quick response, robustness, and high rejection of the input disturbances. experimental results obtained with the proposed current controller are included in section 6. conclusions are given in section 7. 2. synchronous-frame digital current controller most 3-phase digital current controllers are either employed in electrical drives or in grid connected static power converters. the former have the task of controlling the stator currents of 3-phase ac machines, while the later control the current injected into the 3phase ac grids. an igbt inverter, used to supply an ac machine, is shown in fig. 1. the ac line voltage is rectified to obtain the dc voltage e. the voltage e feeds the 3-phase inverter. by means of the pulse width modulation (pwm), the inverter generates variable frequency, variable amplitude voltages, required for the proper current control. in fig. 2, the two igbt inverters are used to take the energy from the wind turbine and pass it into the ac grid. one of the inverters (on the right) has the function rather similar to the one in ac drives, and it controls the stator current of the ac generator, thus controlling the flux and torque of the machine. the inverter on the left in fig. 2 takes over the energy that comes through the dc link circuit and passes the energy into the grid. it has to control the current injected into the grid. the grid current has to be sinusoidal, with a low thd, and with the power factor which depends on the active power and reactive power commands. in both fig. 1 and fig. 2, the three phase inverters are used as the voltage actuators, which supply the voltages required for the proper current control. fig. 1 three phase inverter as the voltage actuator within an electrical drive. the three phase inverters of figs. 1 and 2 are nonlinear voltage actuators that cannot supply a continuously changing voltage. they are linearized by means of the pulse width modulation, illustrated in fig. 3. in each switching period tpwm, the output phases are connected to the upper rail of the dc bus during ton conduction interval, and then switched to the lower rail of the dc bus during toff = tpwm ton conduction interval. in this way, the average value within the switching period is uav = eton/tpwm, where e is the dc voltage across the dc bus, while the voltage uav is referred to the minus rail of the dc bus. in the prescribed way, the switching bridge as a voltage actuator is linearized. in each switching interval tpwm, it provides the average voltage which can be adjusted by altering the value of ton. high performance digital current control in three phase electrical drives 657 fig. 2 the use of the 3-phase inverters as the voltage actuators within the power conversion system which takes over the energy from a variable speed generator (right) and recuperates the energy into the ac grid. the left side of fig. 3 illustrates asymmetrical pwm technique, while symmetrical pwm is given in the right. due to the inferior performances, asymmetrical pwm is not used in 3-phase inverters. in both electrical drives and grid side power converters, the 3phase inverters use the symmetrical pwm technique. other techniques which are also used have the same sequences as the carrier-based symmetrical pwm. in cases where the output voltage of the 2-level 3-phase inverter is generated by the space vector modulation, the resulting pwm pattern can be proved equal to the pattern obtained with symmetrical pwm where the modulating signal is conveniently changed. fig. 3 pulse width modulation with asymmetrical (left) and symmetrical carrier. the waveform of the line-to-line voltage uab is given in lower right. in fig. 3, the intervals where the digital controller executes the control algorithm are designated by exe. one execution occurs during the rising edge of the carrier, while the successive execution takes place during the falling edge. in other words, there are two executions in each tpwm. therefore, the sampling time of the current controller is tspl = tpwm/2. each execution instants calculates a new value for the conduction intervals ton for the phases a, b, and c. due to uav = eton/tpwm, calculated intervals ton actually represent the voltage commands. the ratio m=ton/tpwm represents the modulation index. in fig. 3, the modulation indices are denoted by ma, mb, and mc. considering the execution instant between b0 and a1 in fig. 3, it calculates the values of ton (m) that cannot be applied before the instant a1, when the carrier reaches the period count and starts do decline. therefore, the effects of the calculated ton (m) take place between a1 and b1, thus affecting the falling edges of the phase voltage pulses. 658 lj. s. peric, s. n. vukosavic the same way, the execution instant between a1 and b1 produce ton and m that would be applied only after the instant b1, when the carrier reaches zero, thus affecting the rising edge of the phase voltage pulses between b1 and a2. delays are introduced due to the hardware properties of the pwm peripheral units. in order to avoid multiple commutations within a single period tpwm, the values of modulation signals ma, mb, and mc are reloaded into the pwm comparators only at instants where the pwm carrier reaches either zero or the period count. intrinsic delay of the pwm peripheral unit introduces a transport delay of tspl/2 into the voltage actuator. this delay has to be taken into account when designing the structure and deciding parameters of the digital current controller. a simplified schematic of the inverter supplied stator winding is given in fig. 4, made by adopting the subsequent assumptions. for both the induction motors and synchronous motors, it is reasonable to assume that the magnetic flux within the machine exhibits very slow changes, compared to the desired dynamics of the loop. the same assumption holds for the rotor speed. at the same time, the electromotive force emf is the product of the flux and the rotor speed. therefore, it is reasonable to assume that the electromotive force emf has the role of a slow, external disturbance within the current control system. fig. 4 simplified schematic of the inverter supplied stator winding. this schematic does not reflect the coupling between phases in an electric machine. in cases where the inverter of fig. 1 generates the three phase system of symmetrical, sinusoidal voltages, the average value of the three output phase voltages corresponds to the center-point of the dc bus, denoted by the ground symbol in fig. 4. if the three phase winding of the ac machine is symmetrical, and the electromotive forces are symmetrical and balanced, then the star connection of the stator winding remains at the potential of the ground, as denoted in fig. 4. in such cases, the stator winding can be represented by simplified schematic of fig. 4. similar considerations can be drawn for grid side connected power converters with series l filter. the only difference is that the phase voltages of the ac grid replace the electromotive forces of the stator winding, while rl parameters of the output filter and the grid replace the elements r and l in fig. 4. in order to perform the current control task, it is necessary to acquire the feedback signals, namely, the value of the stator current. characteristic waveforms are given in fig. 5. due to the pulsed nature of the stator voltage, the current has the fundamental component and a superimposed ripple. the ripple comprises the spectral component at the pwm frequency fpwm and a certain spectral content at fpwm integer multiples. with tspl = tpwm/2, the most of the ripple energy resides at the nyquist frequency and impairs the sampling process. with assumed linear change of the ripple (curve a in fig. 5), it would be possible high performance digital current control in three phase electrical drives 659 to acquire the samples at the center of each voltage pulse, whether positive or negative, and obtain a ripple free feedback (i1) (regular-sampling-double-update). due to rl nature of the winding impedance, the waveform of the ripple assumes the form of the curve b in fig. 5. moreover, the center of the voltage pulses gets affected by unpredictable effects of the lockout time and gating signal delays. therefore, an attempt to acquire a single sample in each halfperiod of the pwm would result in sampling errors, denoted by i2 in fig. 5. one of the ways is to respect the limits imposed by kotelnikov sampling theorem, that is, to filter out any spectral content above fspl/2 = fpwm. considering a limited resolution of the analog-to-digital converter, it is usually considered quite sufficient to reduce any spectral content in the forbidden area below the level of 1 lsb of the adc. even so, a heavy low pass filtering would be required to complete the task, thus introducing unacceptable delays, phase errors and amplitude errors. alternative ways of securing an error-free sampling without introducing considerable delays is explained in the following section. fig. 5 pwm-related ripple and the fundamental component of the stator current. 3. an advanced feedback acquisition system the main problem in acquiring the current feedback is the presence of the current ripple, caused by the pulsed nature of the inverter voltages. the ripple has a triangular form, illustrated in fig. 6. most of the spectral energy of the ripple resides at the pwm frequency, with some minor components located at integer multiples of fpwm. the consequential sampling errors, illustrated in fig. 5 can cause considerable performance deterioration of the current controller performance. in ac drives environment, single-sample feedback acquisition of fig. 5 is prone to sampling errors [17], [18]. with relatively large dv/dt values at the inverter output, the switching causes parasitic oscillations of the voltage and current [17]. the frequency of such oscillations is well above the nyquist frequency. the parasitic lc elements that give rise to poorly damped parasitic oscillations are present even with a rather short inverter-motor cable [17]. in all the sampling schemes where the feedback is obtained from a single sample in each sampling period, the oscillations above the nyquist frequency introduce the sampling errors. in a 3-phase ac controller, the switching instants continuously change according to the voltage command, and their position relative to the sampling instant is variable. the consequential sampling noise is larger when the switching comes close to the sampling instants, where the switching-excited parasitic oscillations may contribute to considerable feedback errors [18]. regular-sampling-double-update approach introduces the sampling errors even in cases where 660 lj. s. peric, s. n. vukosavic the switching-noise-oscillations are much lower, such as the case with ac drives with integrated motor-inverter and no cable. the feedback errors are introduced whenever the sampling instants slide away from the zero-crossing instants of the current ripple. any imperfection, parasitic effect or delay that moves the ripple-zero-crossing from the sampling instant introduces the sampling errors. one way of reducing the such errors is finding the average value of the current in each pwm period by oversampling. fig. 6 sampling scheme with pwm-period averaging. the oversampling technique aided with digital filtering/averaging is well known and widely used [16], [20]. in order to reduce the measurement errors in an industrial current control environment, we implemented the oversampling to perform time-skewed onepwm-period averaging of the feedback signals on an industrial dsp. devised technique is rather simple. a similar technique has been introduced and tested in [20]. thorough experimental evidence of [20] proves that the proposed oversampling and decimation technique, also called one-pwm-period-averaging results in considerable reduction of the sampling errors. while the feedback acquisition proposed in [20] takes the average of the samples acquired between the interrupt events, the acquisition window proposed in this paper (fig. 9) uses another acquisition window. it is skewed by texe, where texe corresponds to the execution time of the control interrupt. in [20], the feedback delay is compensated by extending the controller with a differential control action. in this paper, we avoid the differential action and rely on the time-skewed acquisition window (fig. 9) which enables an effective reduction of time delays. the basic approach taken is [20, fig. 5] is similar, but not identical to the time-skewed approach illustrated in fig. 9, where the oversampling window is shifted by texe. the general description of the oversampling/decimation is found in [20] in a brief, eight lines paragraph above (12). at the same time, neither this specific implementation nor the analysis of consequential delays were published by other authors. a more detailed description of the one-period-averaging is reinstated in this section, along with the necessary information and the model of the transport delay, which is required for the proper understanding of the next steps and for the further analysis. later on, the time-skewed sampling window of fig. 9 is emphasized and discussed, as it represents the difference between the feedback acquisition of [20] and the feedback acquisition used in this paper. the feedback averaging is implemented on a low cost dsp controller. the implementation of the time-skewed one-pwm-period averaging on an industrial dsp requires some skill, as the resources are cost-limited and the programming is not trivial. we are also aware of the possibility to implement the relevant algorithm on the high performance digital current control in three phase electrical drives 661 laboratory control platform dspace microautobox ii, which has the hardware support for the synchronization of a/d and pwm processes, and it also supports the oversampling. this opens the possibility to implement and verify the time-skewed onepwm-period averaging in laboratory environment, with much lower effort, and without the need to change the dsp code of the actual industrial drive. the current ripple can be reduced by the sampling scheme outlined in fig. 6. the feedback signal at instant (n+1)tspl is calculated from a number of equidistant samples, acquired within the past pwm period, starting from (n-1)tspl and ending with (n+1)tspl. the number of equidistant samples acquired within each tpwm = 2tspl interval can be very large. with contemporary digital signal processors, it is possible to scan all the adc channels each 1s. hence, with a typical fpwm = 10 khz, it is possible to acquire up to 100 successive samples of all the analog channels. for practical reasons, the number of samples is usually adjusted to 2 n , hence, either 32 or 64 samples. the samples are collected automatically, by an internal dma machine, without an additional overload of the cpu. collected samples are automatically stored in a designated region of the internal ram, thus made ready for further processing. during each control interrupt, it is necessary to find the sum of the samples acquired over the past pwm period, and to calculate their average value by dividing the sum by the number of samples. in cases where the oversampling factor is equal to the power of two (2 n ), division can be replaced by simple right-shifting of the sum. the sum of the samples corresponds to the average value of the output current in stationary coordinate frame. transformation into the stationary frame requires the proper angle between the two frames. the averaged feedback signals have to be transferred into the synchronous frame by using the average angle within the same pwm period where the actual samples have been acquired. in both direct and inverse park transformations, the angle has to be time-synchronized with the samples that are being transformed. with a considerable number of samples, it is reasonable to assume that the average value of the collected samples corresponds to the average value of the sampled current within the preceding tpwm period. therefore, value of i f n+1 at instant (n+1)tspl can be expressed in terms of the current samples in-1, in and in+1, representing the instantaneous value of the output current at instants (n-1)tspl, ntspl, and (n+1)tspl. it is of interest to notice that the samples in-1, in and in+1 are not actually acquired, and they are not available in the dsp ram. they are mentioned in an effort to relate the feedback signals to the output response of the actual system. namely, the dsp controller does not acquire the samples at instants (n-1)t, nt, and (n+1)t, and it does not have the information on the actual output (i dq in fig. 7). the feedback loop is closed by using the signal if dq in fig. 7, obtain by onepwm-period averaging. for the purposes of the subsequent analysis, it is necessary to find appropriate model of the delay, and to express the feedback i f n+1 in terms of the samples in-1, in and in+1. the samples in-1, in and in+1 coincide with the zero-count and the period-count of the pwm carrier (figs. 3 and 5). with regular-sampling-double-update, tpwm=2tspl, and the average value of the inverter voltage is changed in each tpwm/2. with l/r >> tspl, and neglecting the current ripple, the remaining ripple-free component of the output current has a quasi-linear change between (n-1)tspl and ntspl, as well as between ntspl and (n+1)tspl. with this assumption, the average value of the output current from (n-1)tspl to ntspl is roughly equal to (in-1+in)/2, while the average value from ntspl to (n+1)tspl is equal to (in+in+1)/2. therefore, the average value on the interval [(n-1)tspl .. (n+1)tspl] becomes the average value of (in-1+in)/2 and (in+in+1)/2, 662 lj. s. peric, s. n. vukosavic 1 1 1 2 4 f n n n n i i i i        . (1) both the samples of the stator current, such as (n-1)tspl, ntspl, and (n+1)tspl, and the samples of the feedback i f can be transformed into z domain and represented by corresponding complex images i f (z) and i(z). the former and the later are related by the transfer function of the feedback path wf, 2 2 ( ) 2 1 ( ) ( ) 4 f f i z z z w z i z z      . (2) with tspl = tpwm/2, the transfer function wf has an infinite attenuation at the switching frequency fpwm. the attenuation is also infinite at integer multiples of fpwm. therefore, the feedback signal acquired from (1) does not get affected by the ripple. an average transport delay introduced by (1) and (2) is equal to tspl, hence, considerably lower than the delay of conventional anti-aliasing filters that can be used instead of the proposed averaging. it is of interest to compare the frequency response of the pulse transfer function (2) and the actual one-pwm-period-averaging. with a large number of current samples within each period, the transfer function of the feedback acquisition system is very close to the analog-implemented average over the past tpwm, which has an infinite attenuation at the switching frequency and its integer multiples. delay model of one-pwm-period averaging with n samples requires modified z-transform with the fractional sampling period ratio of n=32 or n=64, which is less convenient, less instructive, and hardly suitable for the analysis, design and the parameter setting of the controller. for that reason, we adopted the approximation (2). this approximation is verified by considerable similarity between simulations and the experimental results. thus, all the further design phases and parameter setting procedures use delay approximation of (2). the purpose of wf(z) approximation is to model the transient phenomena below the nyquist frequency, which is the frequency range of interest when it comes to designing and tuning the digital current controller. in the frequency range well above the nyquist frequency, there are differences between one-pwm-period-averaging and the transfer function (2), but they do not have any meaningful influence on the setting of the feedback gains. validity of the above approximations are justified by the experiment. 4. the structure of the current controller the current controller provides the two voltages (ud and uq) supplied to the three phase ac machine, where they affect the two output currents (id and iq). whether represented in synchronous or in stationary frame, the plant has two inputs and two outputs. the transient phenomena in orthogonal axis are coupled. the coupling depends on the revolving speed of the dq frame, that is, on the revolving speed of the electrical machine. the coupling is also affected by the transport delays. direct digital design (ddc) with the imc applied in z domain [11] decouples the transient phenomena in orthogonal axes by means of the controller with conveniently embedded proportional and integral actions. the pulse transfer of such controller gets multiplied by the pulse transfer function of the plant (fig. 7) to obtain the open loop transfer function which does not have any coupling terms [11, iv.e]. relying on this result, it is possible to add the filtering terms in the feedback path and high performance digital current control in three phase electrical drives 663 perform the gain setting assuming that the coupling between the orthogonal axis does not exist; namely, assuming that the current controlled system is a single input single output system (siso). the analysis given in subsections 4.1 and 4.2 are performed under this assumption. more detailed support for such a claim is given in subsections 4.3-4.5. the current controller executes in each tspl interval, that is, two times in each pwm period. the current controller tasks include the acquisition of the feedback signal, the execution of the control algorithm, and writing the voltage references, in the form of ton commands, into the corresponding registers of the pwm peripheral. the exact sequence of events has considerable effects on the consequential transport delay and it determines the closed loop performance. the execution of the current control tasks takes place within an interrupt, triggered by a programmable event. the interrupts have to repeat twice in each pwm period. in fig. 8, the interrupt events are created whenever the pwm carrier reaches either zero or the period count. one such execution account is denoted in fig. 8. it takes place after the period count of the pwm carrier, at t = (n1)tspl. the interrupt calculates the feedback signal i f n-1 as the average value of successive current samples within the past pwm period. it can be approximated by the function of the samples in-3, in-2, and in-1, as i f n-1= 0.25(in-3+2in-2+ in-1). based upon such feedback, the current controller derives the current error, and it calculates the voltage command un-1, suited to drive the current error back to zero. once calculated, the voltage command un-1 is expressed in terms of the pulse width ton for each of the three inverter phases. the pulse width values are reloaded into the pwm peripheral at instant t = ntspl. therefore, the voltage command un-1 determines the average voltage on an interval [ntspl .. (n+1)tspl]. this implies another transport delay that has to be taken into account in the controller design. fig. 7 block diagram of the digital current controller. fig. 8 execution of the control interrupt immediately after the pwm carrier reaches zero-count or period-count. 664 lj. s. peric, s. n. vukosavic the transport delays can be reduced by using the multisampling technique of [18]. instead of executing the control interrupt twice per each pwm period tpwm, as is the case in most dual-update-mode solutions, the interrupt can be executed n > 1 times in each half-period tpwm/2. each time the interrupt is triggered, a new feedback sample is acquired and a new voltage reference calculated. the voltage references affect the modulating signals that change n times in each half-period. most of these references do not get implemented, as the pwm process permits only one switching per half-period, as it accepts only one crossing of the modulation signal and the pwm carrier. therefore, the pwm unit uses only one of the voltage references in each tpwm/2, while the multisampling generates considerably more references. one of the consequential drawbacks is a nonlinear relation between the voltage command and the actual output voltage. positive side of the multisampling approach is reduction of the transport delay. besides the nonlinear inputoutput relation, caused by specific insensitivity at vertical transitions, the multisampling picks up the current ripple, which has to be reduced by introducing a dedicated digital filtering, proposed in [18]. in order to suppress the impact of the switching transients on critical samples, it is of vital interest to avoid and skip any sampling after the pwm switching. in order to avoid possible multi-switching conditions, the multisampling requires specialized pwm logic which prevents the system from making more than one commutation in each half-period of the pwm. another possibility of sequencing the current control tasks is denoted in fig. 9, where the zero-count events and period-count-events of the pwm carrier take place at (n1)tspl, (n-0)tspl, and (n+1)tspl. the interrupts occur texe before each counter event. the value of texe should be larger than the worst-case execution time of the control interrupt. in this case, the control interrupt would complete before the successive event of the pwm counter. with recent dsp controllers, the interrupt execution time does not exceed 4s. hence, the interval texe is considerably shorter than the sampling period tspl. the interrupt which completes just before t = ntspl calculates the feedback signal i f n as the average value of successive current samples within the past pwm period. with texe << tspl, the feedback signal can be approximated by the function of the samples in-2, in-1, and in-0, as i f n= 0.25(in2+2in-1+in). the current controller derives the current error and calculates the voltage command un, expressed in terms of the pulse widths ton in corresponding phases. the values are ready before ntspl, and they are reloaded into the pwm peripheral at instant t = ntspl. in this way, transport delay is reduced as un determines the average voltage on an interval [ntspl .. (n+1)tspl]. both the schedule of fig. 8 and the schedule of fig. 9 are considered in this section. 4.1. the schedule with the control interrupt executed after the counter event. in this section, the schedule of fig. 8 is considered, where the current controller collects the feedback i f n-1 as 0.25(in-3+2in-2+ in-1), calculates the voltage command un-1, which, in turn, determines the average voltage on an interval [ntspl .. (n+1)tspl]. the 3 output currents (ia, ib, and ic) can be converted into  frame of reference and expressed in terms of their components i and i. the current can be expressed as a vector i  =i + ji. by introducing  =exp(-rtspl/l), and assuming that the slowly changing emf can be neglected, the difference equation which describes the change of the output current becomes high performance digital current control in three phase electrical drives 665 1 1 1 .n n ni i u r         (3) introducing the complex images i(z) and u(z) by 0 0 ( ) , ( ) ,k k k k i z i u z u        the transfer function wp(z) of the plant can be obtained by 0 ( ) 1 1 ( ) ( ) ( ) mf p e i z w z u z r z z        . (4) the structure of the current controller can be determined by applying the imc principle on wp, 1 1 ( ) 1 c p q z w z w z z     , where q is adjusted to make wc feasible, while  is design parameter that determines the response speed. applied to (4), the imc concept results in a pi controller, with both pand igains determined by decoupled variation of the gains provides an additional degree of freedom which helps meeting the desired performances. the current controller with proportional action kp and the integral action ki can be described by the following transfer function, ( ) . 1 c p i z w z k k z    (5) with transfer functions (2)-(5), the block diagram of the current controller is given in fig. 7, where emf is assumed to a slow, external disturbance, the effects of which are reduced by the integral action of the controller. fig. 9 execution of the control interrupt just before the pwm carrier reaches the next zerocount or period-count. the interrupt must start at least texe before the rollover of the pwm carrier. the worst case execution of the interrupt should not exceed texe. 666 lj. s. peric, s. n. vukosavic the open loop transfer function wol = wcwpwf is equal to 2 2 ( ) 2 1 1 1 ( ) . 1 ( )4 p i p ol k k z k z z w z z r z zz            (6) introducing the relative gains p and i, 1 1 , , 4 4 p ip k i k r r      (7) 2 3 [( ) ] ( 2 1) ( ) . ( 1)( ) ol p i z p z z w z z z z         (8) the closed loop transfer function is * 3 2 5 4 3 2 ( ) ( ) 1( ) 4( ) 4 . ( 1 ) ( ) ( 2 ) ( ) c p cl ol w wi z w z wi z p i z pz z z z p i z p i z i p p                    (9) the optimum gain setting and the resulting performances are discussed in section 5. 4.2. the schedule with the control interrupt executed before the counter event if the execution time of the control interrupt represents a negligible fraction of the sampling time, than the delay of texe can be neglected in fig. 9. in this case, the feedback signal i f n is obtained as 0.25(in-2+2in-1+ in), and it is used to obtain the voltage command un, which gets applied on the interval [ntspl .. (n+1)tspl]. in this case, 1 1 ,n n ni i u r        (10) which leads to the transfer function wp(z) of the plant 0 ( ) 1 1 ( ) ( ) mf p e i z w z u z r z       . (11) the open loop transfer function wol = wcwpwf of the system in fig. 9 becomes 2 2 [( ) ] ( 2 1) ( ) . ( 1)( ) ol p i z p z z w z z z z         (12) the closed loop transfer function becomes * 3 2 4 3 2 ( ) ( ) 1( ) 4( ) 4 . ( 1 ) ( 2 ) ( ) c p cl ol w wi z w z wi z p i z pz z z p i z p i z i p p                   (13) due to reduced delays, the order of the system is reduced from the 5 th down to the 4 th , providing the potential to improve the bandwidth and robustness of the system. high performance digital current control in three phase electrical drives 667 4.3. decoupling of d-axis and q-axis the plant has two inputs, the voltages in d-axis and q–axis. the two outputs are the corresponding currents. therefore, it is a multi input, multi output system (mimo). in cases where the transient phenomena in orthogonal axis are decoupled, it is possible to design and tune the current controller in a simplified way, considering a single input, single output system (siso). adopting the complex vector notation, where the current error is expressed as i=id+jiq, while the output current is i=id+jiq, the product wcwp = i(z)/i(z) in fig. 9 is a complex number. in cases where the axes are coupled, this number has a non-zero imaginary part. in cases where the controller wc cancels the undesired dynamics of the plant wp and achieves complete decoupling, the transfer function wc(z)wp(z), as well as the closed loop transfer function i(z)/i * (z) do not have an imaginary part. one such example is given in [11, iv.e], where the equation (12) represents the resulting closed loop transfer function. in such cases, it is possible to adopt siso approach in parameter tuning. some key considerations on decoupling and tuning of the current controllers are given in [8], [11], [12], [14], and [19]. the axis decoupling can be obtained by using the s-domain imc approach, as shown in [5-7]. in absence of additional delays, the approaches of [5-7] would provide a decoupled operation of the current controller. yet, any digital implementation of the current controller is time-discrete, and it involves additional time delays. there is a number of valuable contributions that deal with the current controller in sdomain, and they provide a useful insights to readers [12], [14], [19]. in s-domain, the transport delays have to be modeled by rational approximation, and most frequently by pade approximation. at the same time, discrete-time integrators are represented by tustin approximation. designing and tuning digital current controllers in s-domain has a limited accuracy of representing the discrete-time phenomena in s-domain. consequential errors are more emphasized in the frequency range next to the desired bandwidth. the errors get more visible as the frequency comes close to the desired bandwidth, which is close to 20% of the pwm frequency in cases with regular-sampling-double-update. in addition, rational approximation of delays also introduces the non-minimum phase phenomena that do not correspond to the behavior of the actual system. the above mentioned problems do not exist in cases where the controller design relies on direct digital design, and in particular on the implementation of the imc concept in z-domain. in such cases, the errors introduced by s-model representation of discrete-time phenomena are absent. in [19], the current controller is designed in s-domain, with approximation of discretetime phenomena. the transport delay is equal to 3/2 of the sampling period, and it is approximated by pade delay. this approximation has the phase error of 1 degree at 10% of the sampling frequency. the error rises to 8 degrees at 20% of the sampling frequency. the phase shift of the relevant vectors due to delay is compensated by introducing a "lead" compensation which rotates the vectors by an angle of tdelay. the integrators are represented by tustin approximation. notwithstanding the decoupling measures, some cross-coupling effects remain due to delays. remaining cross coupling is seen from nondiagonal elements. these cross coupling effects are seen in differential equation [19, eq. 17] and the plant transfer function [19, eq. 18]. the cross coupling is greatly reduced by mimo design and a systematic procedure for an accurate tuning of the pi controller. the non-minimal phase due to numerator of [19, eq. 23] causes some inaccuracy at the very beginning of transients. 668 lj. s. peric, s. n. vukosavic 4.4. direct digital design with z-domain imc the effects caused by approximations inherent to s-domain design are also seen in the first four controllers considered in [11]. in the design iv.e of [11], where the approximations are not used and the imc design is applied in z-domain, the open loop transfer function wol(z) = idq(z)/idq(z) and the closed loop transfer function wcl(z) = idq(z)/i * dq(z) do not have the cross coupling terms, and do not include delay-dependent factors. the function wcl(z) in [11, eq. 12] represents the ratio between the output current idq(z) = id(z) +j iq(z) and the corresponding reference. the imaginary part of this wcl(z) is equal to zero. therefore, the q axis output current is not affected by the d axis reference, and vice versa. the input step response obtained with the current controller of [11, iv.e] does not depend on the excitation frequency, proving the effective decoupling. it has to be noticed at this point that the above conclusions consider the closed loop transfer function. the same does not hold for the disturbance transfer function, which relates the output to the voltage disturbance. while the imc-designed controller wc of fig. 9 gets multiplied with wp to obtained (wpwc), the product free from any coupling terms; the electromotive force in fig. 9 acts between wp and wc. this results in the disturbance transfer function which comprises the factor wp on its own, without getting multiplied by wc. thus, the undesired coupling does not get canceled in disturbance transfer function, which depends on the fundamental frequency even in systems with ddc-imc designed controllers. the same holds in all the competitive current controllers [14], where the response of the output current to changes in the electromotive force depends on the fundamental frequency. disturbance response of the current controller is of considerable importance, but it falls out of the scope of this paper. at the same time, the electromotive force in synchronous permanent magnet motors comes as a product of the constant flux of the magnets and the revolving speed. therefore, the changes in the electromotive force are determined by the speed changes, which are considerably slower than the current loop transients. in grid connected inverters, where the electromotive force gets substituted by the mains voltage, disturbance transfer function is of particular importance. namely, it describes the capability of the current loop to reject the low order harmonics of the grid and prevent them from introducing distortion in the output current. 4.5. the ratio between proportional and integral gains the imc design in s-domain results in wc(s)= r/s+ l+ jl/s. the ratio between the proportional gain l and the integral gain r is defined by the electrical time constant, and it has to be maintained in order to cancel the undesired plant dynamics. direct digital design and the use of the imc method in z-domain results in the current controller given in [11, fig. 10] and [11, eq. 11]. it has the proportional gain of l/tspl and the integral gain of r. hence, the ratio between the proportional and integral gain has to remain equal to (1/tspl)(l/r) in order to maintain the desired decoupled operation. within the closed loop transfer function wcl, the pulse transfer of the controller wc is multiplied by the plant wp to obtain the product wcwp= idq(z)/idq(z). with ddc-imc design [11, iv.e], wcwp does not have any coupling terms. relying on that, it is possible to add the term wf(z) in the feedback path and to perform the gain setting assuming that the coupling between the orthogonal axis does not exist. as long as the function wf(z) does not introduce the coupling terms of its own, the closed loop gain wcwpwf and the closed loop transfer function wcwp/(1+wcwpwf) will remain coupling-free. high performance digital current control in three phase electrical drives 669 the previous conclusions can be applied to fig. 9, where ddc-imc designed controller wc multiplies the plant transfer function wp and provides the direct-path gain wpwc with no diagonal elements. with proper implementation, the transfer function wf of (2) does not introduce any coupling elements. therefore, the analysis and the parameter setting of the system with one-pwm-period averaging in the feedback path can be performed by adopting siso approach, as already done in previous subsections. while applying the siso design procedure, a particular attention has to be paid to the parameter setting procedure. namely, the choice of the proportional and integral gains is not free. in order to maintain the decoupled operation, the gains have to maintain the ratio (1/tspl)(l/r). 5. the optimum parameter setting design and tuning of digital current controllers has attracted considerable attention. a comprehensive and instructive summary of most relevant controllers is given in [11]. it includes several s-domain approaches to designing and tuning the digital current controllers, as well as the case with direct digital control (ddc) with z-domain implementation of the imc concept. while the other approaches introduce a number of s-domain approximations of discrete-time features, and therefore introduce additional coupling terms, the approximation-free ddc-imc concept provides a flawless decoupling. the controller wc comprises the basic proportional and integral actions along with several decoupling terms that include exp(jtspl) elements. therefore, parameter tuning procedure has to establish the proportional and integral gains that provide the desired response. in current controller design iv.e of [11], the open loop transfer function and the closed loop transfer function do not have the cross coupling terms, and they do not include delay-dependent factors. based upon that, we concluded that in the systems with ddc-imc designed controller, the feedback filtering and the parameter setting procedure can be performed on a simplified, more transparent and more intuitive bases. in order to keep decoupled response, it is necessary to maintain the ratio between the proportional and integral gains, which reduces the gain tuning to selecting one single parameter. performance of both closed loop transfer functions (9) and (13) depends on the closed loop gains p and i. with characteristic polynomials of the 4 th and the 5 th order, it is difficult to find analytical relation between the gains and the closed loop performance. parameter setting procedure proposed in this section envisages (a) definition of the performance criterion, (b) the search of the p-i plane for the point which offers the best performance. in order to obtain a fast, high-bandwidth response with well damped waveforms, the performance criterion includes the settling time t01. the value of t01 has to do with the closed loop step response. following the input step, the output of the system moves towards the target, and it settles on the target exponentially, or with some damped oscillations. after the time delay t01, the output error falls into +/-1% wide strip. following t01, the error does not leave the strip, unless another input disturbance is received. the interval t01 is called "1% settling time", and it is of interest to keep it as small as possible. the settling time as performance criterion is an effective way of discarding the reponses which have a high bandwidth and a short rise time, but at the same time exhibit poorely damped response with oscillatory approach to the target value. 670 lj. s. peric, s. n. vukosavic in addition to the settling time, it is also of interest to evaluate the robustness of the controller. due to on-line changes in the system parmeters, such as the ac grid impedances in a grid connected power converter, it is of interest to maintain the stability and the response characters in the presence of variable parameters. the robustness of the system can be measured by the vector margin (vm), as effectively used in [11]. the vector margin is usually calculated from the open loop transfer function wol(z). for the given excitation frequency , the argument z is exp(jspl). while  sweeps from 0 up to the nyquist frequency, the values of wol(z) are complex numbers which move in the complex plane and draw a graph. for the system stability, this graph must not pass through the point (1, j0). the robustness can be judged from the the minimum distance (radius) between the graph and the point (-1, j0). the value of the radius is called the vector margin. with vm < 0.5, one would expect an oscillatory response that is likely to pass into instability in the case of a significant parameter change. the motivation of using a larger vm comes from the fact that magnetic saturation in electrical machines has considerable effect on the equivalent inductance of the stator winding. in this paper, there are two search runs for the optimum parameters. the first search assumes that the feedback gains p and i can be changed independently, while the second search respects the need to maintain a constant p/i ratio. 5.1. parameter search in p-i plane parameter search performed in this subsection assumes that the feedback gains p and i can be changed independently. in other words, it is assumed that the ratio p/i does not have to be kept constant. the optimum gains p and i are searched for the closed loop transfer functions of (9) and (13). the space where the optimum gains are searched is a domain in the 2-dimensional p-i space, limited by p > 0, i > 0, and by p < 1, i < 1. the search method is rather simple, it starts by selecting a large number of equally spaced discrete gains along both axes, it proceeds by calculating the performances for each pair of the gains (p, i), and ends by selecting best pair of gains according to design criteria. the optimum gains are searched for the execution schedule of figs. 7 and 8. in both cases, the search method provided the optimum gains (p, i), the frequency f45 where the phase of wcl drops to -45 o , the frequency fbw where the amplitude of wcl drops to -3db, the vector margin vm, and the overshoot of the step response. all the results are obtained with fpwm = 10khz. the results are summarized in table 1. in cases with vm > 2/3 (p < 0.0777 in table 1), the character of the closed loop response is maintained for a wide range of parameter changes. the step responses are compared in fig. 10. it has to be noted in table 1 that, although the ratio p/i is not fixed, the ratio between the optimum gains remains close to (1/tspl)(l/r). the ratio p/i is equal to 119 for the schedule of fig. 8, and 131 for the schedule of fig. 9. for the given motor, the ratio (1/tspl)(l/r), required for the decoupled operation is equal to 144. hence, in a way, the search procedure finds the optimum close to the area which secures decoupled operation. it is of interest to perform the search procedure where the ratio p/i is kept constant and equal to (1/tspl)(l/r). 5.2. parameter search with constant p/i ratio although there are two gains, p and i, they have to maintain the same ratio, determined by parameters l and r, in order to preserve the proper decoupling between d and q axis [11], [14]. therefore, it is of interest to consider the changes of the gain p, assuming that the ratio p/i remains unaltered and equal to (1/tspl)(l/r). in this case, the search results are high performance digital current control in three phase electrical drives 671 given in table 2. with an overshoot of 2.64%, the closed loop bandwidth reaches 20% of the switching frequency. in table 2, the gain p sweep from 100% to 150% of the optimum value makes the overshoot increase from 3.4% up to 22%, while the closed loop bandwidth increases from 21% up to 33% of the switching frequency. starting with the optimum gain setting, the gain reduction of 50% leads to an overshoot of 0%, while the closed loop bandwidth drops to 7% of the switching frequency. stability limit is reached with the gain equal to 410% of the optimum value. comparable state-of-the-art solutions are summarized in [11] and [14]. they do not use one-period-averaging, and rely instead on regular-sampling-double-update with one sample in each tpwm/2. in table 1 of [11], the closed loop bandwidth of a well damped, low overshoot response reaches 10% of the sampling frequency (20% of the switching frequency). in figs. 12-14 of [14], a well damped, low overshoot response has the rise time of 5-6 sampling times. the corresponding bandwidth is, roughly, 0.35/(5ts) = 0.07fs, (14% of the switching frequency). solution devised in this paper has an additional delay, caused by the feedback averaging. with devised control methods, the consequential closed loop bandwidth of table 2 is better than with comparable solutions. table 1 performance factors obtained with the optimum gains and with the execution schedule of figs. 7 and 8. parameter search is performed in two dimensional space, with unconstrained proportional and integral gains. schedule p i f45 [hz] fbw [hz] vm overshoot [%] t01 fig. 8 0.0442 0.00037 541 1177 0.677 0.84 21 fig. 9 0.0708 0.00054 994 1882 0.705 0.67 9 table 2 parameter search is performed for the schedule of fig. 9, and for fixed ratio between the proportional and integral gains. schedule p fbw [hz] vm overshoot [%] fig. 9 0.065 1607 0.722 0.42 fig. 9 0.067 1687 0.715 0.75 fig. 9 0.071 1862 0.701 1.61 fig. 9 0.075 2005 0.689 2.64 fig. 9 0.077 2116 0.679 3.45 fig. 9 0.081 2252 0.668 4.8 fig. 9 0.086 2474 0.648 6.8 fig. 9 0.091 2618 0.636 8.4 fig. 9 0.095 2753 0.623 10.2 fig. 9 0.1 2912 0.607 12.1 fig. 9 0.116 3382 0.553 22 6. experimental results the experimental verification of the two current controllers is performed on an experimental setup which comprises a synchronous motor with surface mounted magnets, a pwm inverter and a digital control platform. the stack length of the motor is l = 128mm, and it has 6 poles. the rated torque is 7.3 nm while the rated current is 7.3 arms. the motor has stator resistance of 0.47and the inductance of 3.4 mh. the pwm inverter has the dc-bus voltage of edc = 520v, and it has the switching frequency of 10khz. the rated 672 lj. s. peric, s. n. vukosavic lockout time is set to 3s. the digital control platform uses tms320f28335 dsp. it has the adc unit with 12-bit resolution and with 16 input channels. the oversampling mechanism acquires 32 samples per base period. the sampling and storing is automated by embedded dma machine. the anti-aliasing filters are designed as passive rc filters, using the standard procedures, and also taking into account the fact that the effective sampling frequency is 32 time larger. with one-pwm-period-averaging, the effective nyquist frequency is increased 32 times, as well as the desired cutoff frequency of the analog anti-aliasing filters. therefore, it is possible to design a passive anti-aliasing filter that would remove any residual noise, while having the cutoff frequency considerably above the desired bandwidth. thus, the impact of such anti-aliasing filter on phase lag, delays and the closed loop dynamics is negligible, and it has no detrimental effects on the closed loop response. in most reports on digital ac current controllers, the experimental waveforms of the output current in dq frame are calculated by the dsp controller, and then written on a dac or copied into a pc. similar procedure is not feasible with the present system of fig. 9, where the output current i dq (z) gets filtered through the block wf(z) to obtain the feedback signal if dq (z). it has to be noted at this point that the only signal available to the dsp controller is the feedback signal. for that reason, the output current i dq (z) cannot be observed from the registers of the dsp controller. the only way to access the output current instead of the average feedback is direct measurement of the actual motor current. the phase current does reflect the changes in id(t) and iq(t), but it is also affected by the rotor position. therefore, experimental traces in fig. 11 are obtained with the rotor locked in position where the measured phase current gets equal to the q-axis current. it has to be notice though that this approach does not allow the experimental verification of the axes decoupling at high speeds. in this regard, the authors rely on the analytical and experimental findings of [11], which considers the direct digital design and the implementation of the imc approach in z-domain, the approach also used in this paper. results of [11] prove that any coupling is removed, while the input-step response does not depend on the excitation (fundamental) frequency. the execution of the control interrupt takes 3.5s on the selected dsp platform. therefore, for the scheduling scheme of fig. 9, the interrupts were triggered 4s prior to each pwm counter event. experimental traces are obtained in fig. 11, showing a reasonable similarity with the simulation results shown in fig. 10. all the measurements were done at the zero speed, with the rotor locked in position where the measured phase current corresponds to the q axis current. fig. 10 step response with execution fig. 11 experimental step responses schedules outlined in figs. 7 and 8. with schedules of figs. 7 and 8. high performance digital current control in three phase electrical drives 673 7. conclusions this paper deals with practical implementation of digital current controllers, which represent the key elements in majority of contemporary static power converters. high performance current controllers are required in the electrical drives and also in grid connected converters. a high bandwidth and considerable robustness are of uttermost importance in all applications of digital current controllers. in this paper, a novel approach to acquiring and filtering the feedback signal is proposed. devised approach is free from sampling errors and it introduces only a minimum delay into the feedback path. we also consider the transport delays in the voltage actuation path and the transport delays in the feedback path. proposed parameter setting procedures takes into account the delays, and it meets both the bandwidth requirements and the robustness against the noise and the parameter changes. proposed results are verified by simulation and also on an experimental setup comprising a brushless dc motor, a pwm inverter and a dsp-based control platform. for the relative gain p = 0.075, and for gain ratio p/i determined by the imc procedure, the closed loop bandwidth reaches 20% of the switching frequency (that is, 10% of the sampling frequency) with an overshoot of 2.64% and with a vector margin of 0.689. the system parameters can to change more than 4 times before entering the instability region. devised control solutions have the potential of reducing the noise sensitivity and improving the closed loop performance of digital current controllers applied in 3 phase ac drives and in grid connected power converters. references [1] e. levi, “foc: field oriented control,” in the industrial electronics handbook, (power electronics and motor drives), 2nd ed., boca raton, fl, usa: crc press, 2011. [2] d. g.holmes, b. p. mcgrath, and s. g. parker, “current regulation strategies for vector-controlled induction motor drives,” ieee trans. ind. electron., vol. 59, no. 10, pp. 3680–3689, oct. 2012. [3] j.-w. choi and s.-k. sul, “fast current controller in three-phase ac/dc boost converter using d-q axis crosscoupling,” ieee trans. power electron., vol. 13, no. 1, pp. 179–185, jan. 1998. [4] j.-w. choi and s.-k. sul, “new current control concept minimum time current control in the threephase pwm converter,” ieee trans. power electron., vol. 12, no. 1, pp. 124–131, jan. 1997. [5] l. harnefors and h. p. nee, “model-based current control of ac machines using the internal model control method,” ieee trans. ind. appl., vol. 34, no. 1, pp. 133–141, jan./feb. 1998. [6] f. briz, m. degner, and r. lorenz, “dynamic analysis of current regulators for ac motors using complex vectors,” ieee trans. ind. appl., vol. 35, no. 6, pp. 1424–1432, nov./dec. 1999. [7] f. briz, m. degner, and r. lorenz, “analysis and design of current regulators using complex vectors,” ieee trans. ind. appl., vol. 36, no. 3, pp. 817–825, may/jun. 2000. [8] j.-s. yim, s.-k. sul, b.-h. bae, n. patel, and s. hiti, “modified current control schemes for highperformance permanent-magnet ac drives with low sampling to operating frequency ratio,” ieee trans. ind. appl., vol. 45, no. 2, pp. 763–771, mar./apr. 2009. [9] j. holtz, j. quan, j. pontt, j. rodriguez, p. newman, and h. miranda, “design of fast and robust current regulators for high-power drives based on complex state variables,” ieee trans. ind. appl., vol. 40, no. 5, pp. 1388–1397, sep./oct. 2004. [10] b.-h. bae and s.-k. sul, “a compensation method for time delay of full digital synchronous frame current regulator of pwm ac drives,” ieee trans. ind. appl., vol. 39, no. 3, pp. 802–810, may/jun. 2003. [11] h. kim, m. degner, j. guerrero, f. briz, and r. lorenz, “discrete-time current regulator design for ac machine drives,” ieee trans. ind. appl.,vol. 46, no. 4, pp. 1425–1435, jul./aug. 2010. [12] d. g. holmes, t. a. lipo, b. mcgrath, and w. kong, “optimized design of stationary frame three phase ac current regulators,” ieee trans. power electron., vol. 24, no. 11, pp. 2417–2426, nov. 2009. [13] h.-t. moon, h.-s. kim, and m.-j. youn, “a discrete-time predictive current control for pmsm,” ieee trans. power electron., vol. 18, no. 1, pp. 464–472, jan. 2003. 674 lj. s. peric, s. n. vukosavic [14] a. g. yepes, a. vidal, j. malvar, o. lopez, j. d. gandoy, "tuning method aimed at optimized settling time and overshoot for synchronous proportional-integral current control in electric machines," ieee trans. power electron., vol. 29, no. 6, pp. 3041–3054, jun. 2014. [15] s. h. song, j. w. choi, s. k. sul, "current measurements in digitally controlled ac drives," ieee ind. appl. magazine, vol. 6, no. 4, pp. 51-62, jul./aug. 2000. [16] l. r. carley "an oversampling analog-to-digital converter topology for high resolution signal acquisition systems", ieee trans. circuits sys., vol. cas-34, pp.83 -90 1987 [17] a. said, a. h. kamal, "a modeling technique to analyze the impact of inverter supply voltage and cable length on industrial motor-drives," ieee trans. power electron., vol. 23, no. 2, pp. 753–762, mar. 2008. [18] l. corradini, w. stefanutti, and p. mattavelli, "analysis of multi-sampled current control for active filters," ieee trans. ind. appl., vol. 44, no. 6, pp. 1785-1794, nov./dec. 2008. [19] f. d. freijedo, a.vidal, a. g. yepes, j. m. guerrero, o. lopez, j. malvar, and j. dovai-gandoy," “tuning of synchronous-frame pi current controllers in grid-connected converters operating at a low sampling rate by mimo root locus”, ieee trans. ind. electron., vol. 62, no. 8, pp. 5006-5017, aug. 2015. [20] s. n. vukosavic, s. l. peric, and e. levi, “ac current controller with error-free feedback acquisition system,” ieee trans. energy convers., accepted for publication, doi 10.1109/tec.2015.2477267. [21] s. n. vukosavic, s. l. peric, “a modified digital current controller with reduced impact of transport delays,” iet electric power appl., under review (epa-2015-0507). http://dx.doi.org/10.1109/tec.2015.2477267 10771 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 31-42 https://doi.org/10.2298/fuee2301031r © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper machine learning assisted optimization and its application to hybrid dielectric resonator antenna design pinku ranjan1, harshit gupta1, swati yadav2, anand sharma3 1abv-indian institute of information technology and management (iiitm), gwalior, madhya pradesh, india 2department of electronics & communication engineering, college of engineering roorkee(coer), roorkee, uttrakhand, india 3department of electronics & communication engineering, motilal nehru national institute of technology allahabad, india abstract. machine learning assisted optimization (mlao) has become very important for improving the antenna design process because it consumes much less time than the traditional methods. these models' accountability can be checked by the accuracy metrics, which tell about the correctness of the predicted result. machine learning (ml) methods, such as gaussian process regression, artificial neural networks (anns), and support vector machine (svm), are used to simulate the antenna model to predict the reflection coefficient faster. this paper presents the optimization of hybrid dielectric resonator antenna (dra) using machine learning models. several regression models are applied to the dataset for optimization, and the best results are obtained using a random forest regression model with the accuracy of 97%. additionally, the effectiveness of machine learning based antenna design is demonstrated through comparison with conventional design methods. key words: dielectric resonator antenna, machine learning, gaussian process regression, anns, svm 1. introduction antenna design optimization is a topic that has received a lot of attention in previous few years. that is because methodologies of conventional antenna design are comprehensive and do not have any guarantee of producing effective results because of the complications of the latest antennas fabrication and execution necessities [1]-[3]. despite the fact that design automation via optimization goes with conventional approaches of antenna design, optimization of antenna designs has many problems [3]-[5]. the significant issues cover the received may 18, 2022; revised july 27, 2022; accepted august 31, 2022 corresponding author: pinku ranjan abv-indian institute of information technology and management (iiitm), gwalior, madhya pradesh, india e-mail: pinkuranjan@iiitm.ac.in 32 p. ranjan, h. gupta, s.yadav, a. sharma efficiency and optimization capacity of accessible techniques to address a wide extent of antenna design issues thinking about the developing details of current antennas. the methods presented in this report can have an effect on the upcoming development of antennas for an abundance of applications. the frequencies which are in the microwave range of their measurements of current (i) and voltage (v) become very difficult [6]-[8]. at higher frequencies, we do not measure current or voltage. it is preferred to measure power. as it goes to higher microwave frequencies, it is hard to carry out the short circuit and open circuit for the ac signals over the broad bandwidth. to control this problem, at the microwave range, we use s parameters. s parameters are stated in terms of incident and reflected traveling waves. they are easy to use in the analysis. s parameters can simply be measured using network analyzers the acceptances of the use of such parameters have been growing rapidly [8]. s-parameters are a complex matrix that shows reflection/transmission characteristics (phase/amplitude) in the frequency domain. there are various parameters on which this parameter depends, such as frequency bandwidth, return loss and radiation pattern [9]-[11]. some academics have concentrated on this issue and forecast antenna performance using various ml techniques in the open literature. sharma et.al. suggested using lasso (least absolute shrinkage and selection operator), ann, and knn approaches to optimize a tshaped monopole. to train the model at two separate frequency bands, 2.5 ghz and 5.5 ghz, 450 data set points were collected [12]. gao et al. optimized the yagi uda, shaped printed antenna, and dual-mode printed antenna using the gaussian process and support vector machines [13]. j. p. jacobs suggested using ml techniques based on gaussian process regression to optimize a u-shaped slot-loaded microstrip antenna. the aforementioned antenna is compatible with both 2.75 ghz and 3.75 ghz frequency bands [14]. this paper deals with hybrid antennas that combine passive and active architecture and its optimization using different machine learning techniques. hybrid antennas are widely used antennas with important applications including radar display control systems for managing self-driving cars, or automated equipment control systems using radar signal inputs. 2. background 2.1. artificial neural network anns were acquainted with the em field and microwave designing during the 1990s [15]. artificial neural networks have discovered applications in antennas, design of radar circuit, remote sensing, measurement difficulties and various fields. neural networks intended to demonstrate the manner by which the individual mind plays out a specific undertaking. an overall meaning of a neural network is given as massive. in the late twentieth century, anns were first acquainted with mimo antennas. ann was used to transform the design parameters, including the dielectric constant, and antenna’s dimensions. as of late, anns include many hidden layers, which are generally alluded to as deep neural networks (dnns) or deep learning, that have been presented to solve antenna parameter and problems of optimization. the output in ann can be predicted as follows: y = xinput * weights + b(bias) (1) yfinal = (x1 * w1) + (x2 * w2) + …. + (xn * wn) (2) machine learning assisted optimization and its application to hybrid dielectric resonator antenna design 33 2.2. support vector machine the svm can take up classification as well as the regression problems. in the problems of regression, on a high-dimensional space called a feature space, the input space of svm is mapped here with the help of linear functions regression that can be accurately performed [16]. in the antenna design field in contrast to anns, the svm is introduced because of its better generalization capability. in practical applications, the sets of training data generated by full-wave em simulations are mainly of finite size, which causes overfitting in certain artificial neural networks applications. also, svm needs fewer training patterns to give precise results, which fastens procedure of training. 2.3. gaussian process regression as of late, the gpr has received broad attention in the area of em designing, including for antenna design. rather than the other 2 ml techniques, the gpr can tell the uncertainty at new design points for the predicted results, which will assist creator with investigating worldwide optima when hardly any points for training are given, the gpr was acquainted with model antenna responses containing the reflection coefficient, gain performance and crosstalk level for 3 distinctive antenna models [17]. 2.4. antenna architecture for this study a hybrid dielectric resonator antenna is used. in the hybrid structure, every antenna is designed to radiate in its own separate band. the hybrid resonator can offer ultrawideband operation if the different bands are sufficiently close. ultra-wideband bandwidth is possible in hybrid resonators to offer ultra-wideband operation by using the techniques of bandwidth improvement in dra and in other antennas as well. fig. 1 displays the structural layout of the dra antenna, and table 1 shows the dimensions of the proposed hybrid cp radiator. in this radiator, the ring-shaped ceramic material is excited by dual linked circular ring-shaped space. table 1 dimensions of proposed hybrid cp radiator symbols dimensions (mm) symbols dimensions (mm) ls = ws 50.0 h 13.0 t2 4.0 lf 31.0 hs 1.6 wf 3.0 r1 13.5 d3 10.0 r2 2.0 d4 4.0 t1 2.0 l1 12.0 fig. 2 shows the fabricated prototype of proposed cp antenna. alumina material (relative permittivity of ceramic material = 9.8; dielectric loss tangent = 0.002) is used to make the ring-shaped ceramic. alumina material is fixed over fr-4 substrate (relative permittivity of fr-4 material = 4.4; dielectric loss tangent fig. 1 structural layout of dra antenna: a) dual linked circular ring aperture; b) panoramic view 34 p. ranjan, h. gupta, s.yadav, a. sharma = 0.02) with the assistance of a quick fix. the thickness of the proposed antenna is 1.6 mm. dual linked circular ring-shaped aperture and t-shaped microstrip lines have been carved over the substrate. а) b. fig. 2 fabricated prototype of proposed cp antenna: (a) bottom view; (b) top view 2.5. s-parameter electrical systems represent the relationship between input and output by the designation of their port. for example, when having 2 ports named port 2 and port 1, the power that transfers from port 1 to port 2 is called . is transfer of power from port 2 to port 1 when it comes to antennas, speaks about amount of reflected power from the antenna, which is called its reflection coefficient. if s11=0 db, at that point 100% power will return back from the antenna and radiated value will be 0. if s11= -10 db, this depicts, if 3 db of power is transmitted to the antenna, -7 db will be the power that will reflect back. the remaining power was delivered to the antenna. this accepted power is either transmitted or consumed as losses inside the antenna itself. since antennas are commonly intended for a low loss, preferably most of the power delivered to the antenna is radiated. fig. 3 shows the simulated and measured s11 parameter of the reference antenna. fig. 3 variation of s-parameter with frequency machine learning assisted optimization and its application to hybrid dielectric resonator antenna design 35 reflection coefficient is a specification which expresses the amount of a reflected wave because in the transmission medium impedance discontinuity is presented. it is equivalent to the ratio of the amplitude of the reflected wave to the incident wave, with each represented as phasors. for instance, it is utilized in optics when we measure the proportion of light reflected back from surface whose index of refraction is different, such as a glass, or in an electrical transmission line to compute line the amount of the electromagnetic wave is reflected due to impedance. 3. implementation and results this segment depicts various steps of the methodology section in more details along with the actual implementation details. 3.1. data collection by altering various parameters of the hybrid dra antenna, the data was first collected by using the hfss software. the data exported from this software includes various parameters related to the antenna such as height, frequency, as well as the corresponding s11 parameters. in this collected dataset the frequency parameter varied from 2.00ghz to 5.00ghz, whereas the height parameter discretely varied from 5mm to 15mm. the dataset contained the value of s11 parameter for every pair for height and frequency. 3.2. data preprocessing and sampling as can be seen from the sample dataset in fig. 6, the dataset exported contained some random, unrelated entries which needed to be removed. the exported dataset was also not in proper format and thus some rearranging of columns and rows was required. in this particular step, we mostly performed such operations on the exported dataset, and finally the exported dataset was dumped into a csv via bash script. this csv will serve as an input to our machine learning model algorithms. to build any machine learning model from a dataset, the first step is the sampling of data. in the dataset provided to the model for as csv input, a sampling procedure was acted upon so as to separate it into various subsets with each one having its own utility. it is normally expected that if we have more data to construct a model, it will give better outcomes. typically, the dataset is isolated like this with their individual utility. as the name demonstrates, the training set is utilized in the training of the learning algorithm. fig. 4 depicts different stages of sampling which is done on the dataset. for the validation and optimization of the model crossvalidation set is used. to ensure that our model extracted the proper patterns from the data and did not introduce too fig. 4 sampling over the dataset 36 p. ranjan, h. gupta, s.yadav, a. sharma much noise, crossvalidation is utilized. and here the fold value is 5. we cannot check the model on this set because the results would be very optimistic as the model is built by using the training set. to perceive how properly the learning algorithm performs with unknown data, we used the test set. 3.3. building ml model building any ml model starts with loading the csv dataset into the python code for ml modeling, after that different machine learning models are applied on that data set according to the requirement of the programmer and for training and running various ml models over the dataset google collab platform is used. 3.4. unpacking of data the dataset of height, frequency and s11 parameter obtained after preprocessing and filtering comes in a .csv file format to our model implementation. to read the dataset shown in fig. 5, from those files a small python code is implemented and dumped into the data frame for object serialization, fast and easy access. fig. 6 it shows that how data is stored in the csv file. fig. 5 python code for reading csv fig. 6 sample data as read from csv 3.5. preparing final data for input as can be seen in the previous image the data read from csv contains s11 values for corresponding pairs of frequency and height (from 5 to 15). after that prepare a data frame consisting of all three values (frequency, height and s11) in one row so that it can machine learning assisted optimization and its application to hybrid dielectric resonator antenna design 37 be used as actual data for our models, i.e., with features and responses defined clearly. preparation of final data frame is indicated in fig. 7. fig. 7 preparing final data frame 3.6. data visualization the final data frame created in the previous step was then visualized in to get insights from the data, shown in fig. 8 and to decide on which models can be leveraged for such a dataset. treating frequency and height as independent variables and s11 will be a dependent variable. relation of all these three variables is shown in fig. 9. fig. 8 data visualization fig. 9 3d visualization of dataset 38 p. ranjan, h. gupta, s.yadav, a. sharma 3.7. multiple regression the very first model used here for dataset was multiple regression. the multiple regression was used because of our dependent variable (s11). in linear regression, the relationship between dependent variable and independent variable x1, ......, xp is given by equation: y = f(x) + ϵ (3) since there are multiple independent variables (height and frequency) and a dependent variable (s11) to predict, the multiple regression model will be given by: f(x) = β0 + β1x1 + ... + βp xp (4) where to calculate dependent variable (f{x}), β0...p are the coefficients of the model and x1...p are the independent variables used to ensure maximal prediction of the dependent variable from the set of independent variables. fig. 10 multiple regression predictions versus actual s11 this multiple regression model was not that much aligned with the dataset and we got only 23% of accuracy for our test dataset. this can be referred from fig. 10. 3.8. polynomial regression it is one of the types of linear regression where connection amidst the dependent and independent variable y and x is demonstrated as an nth degree polynomial. a nonlinear relationship is fitted on this regression between an estimation of x and the subsequent mean of y, denoted by e(y|x). polynomial regression is used for many reasons: 1. all the curvilinear relationships include polynomial terms. 2. inspection of residuals. on the off chance of a curved data a linear model is fitted, a graph consists of a predictor (x-axis) and a scatter plot of residuals (y-axis) is having many positive residuals in the center consequently, in these cases it is not suitable. 3. a speculation in different multiple linear regression analysis talks about independent variables. in a polynomial regression model, this supposition is not fulfilled. y = a + b1x1+ b2x2 +.... + bnxn + ϵ (5) machine learning assisted optimization and its application to hybrid dielectric resonator antenna design 39 on the variable x, y is dependent, intercept of y is the rate of error. therefore, using least square technique, computed y is the response value. another important thing to note is that the polynomial regression is very delicate from the outliers and in the proximity of countable outliers which are present in the data of a nonlinear analysis can change the results drastically. fig. 11 polynomial regression predictions vs actual s11 starting with the 2nd degree polynomial, polynomial regression did not achieve the desired result. when the degree is increased, it is also observed that accuracy increases; within this model accuracy is up to 62%. actual and predicted value using polynomial regression predictions are displayed in fig. 11. random forest regression random forest is a supervised learning algorithm. the “forest” it builds is an ensemble of decision trees[18]. this is based on a gathering method based on bagging. the classifier functions are demonstrated in this way: 1. d is the classifier that primarily makes k bootstrap specimens of d, and each of the specimens symbolizes di . 2. a di has almost the same number of tuples as d that is tested with substitution from d. 3. along inspecting on substitution, in such a manner as a portion belonging to the real tuples of d may should not contain di, although further can happen more than once. the classifier at that point builds a decision tree dependent on each di. accordingly, a “forest” that comprises k decision trees is made. for categorizing an obscure tuple, x, every tree gives back its class forecast considering a single vote. the ultimate choice of x’s group is allocated and given to that tree which has the maximum votes. the working of random forest regression is portrayed in fig. 12. 40 p. ranjan, h. gupta, s.yadav, a. sharma fig. 12 random forest regression for its tree induction this project uses gini index. for d, the gini index is computed as: m gini(d) = 1 ∑ pi2 (6) i = 1 where pi is the likelihood that a tuple in d belongs to class ci. the gini index measures the contamination of d. if the index value is lower than better d was divided. fig. 13 random forest regression predictions vs actual s11 random forest regression is tried with a different number of estimators, and after multiple training, the results were extraordinary for the provided dataset, and the accuracy that is achieved is 97%. this model also has the best fit as compared to all other models that were tried on given dataset as can be seen in the fig. 13. machine learning assisted optimization and its application to hybrid dielectric resonator antenna design 41 4. conclusion this paper is implemented on python. on analyzing the dataset, random forest regression gave the highest accuracy rate of 97%, and the polynomial regression algorithm 62%. this multiple regression model was not a good fit with the dataset and we got only 23% of accuracy for our test dataset. so, multiple regression model has the worst results among all the models used in this paper. it is seen that machine learning is a good option for the optimization of antenna parameters and to predict the variation of s11 with different values of height and frequency. it saves a lot of time and material which was getting wasted in traditional designing. with these ml models, a near prediction based on real values was made (obtained from hfss). the ml models are further supported by experimental findings. the proposed antenna operates between 2 to 5 ghz. the optimized design validates its suitability for the application in hybrid dra by exhibiting stable radiation characteristics within the operating frequency range. references [1] q. wu, y. cao, h. wang and w. hong, "machine-learning-assisted optimization and its application to antenna designs: opportunities and challenges", china commun., vol. 17, pp. 152-164, 2020. [2] g. k. uyanik and n. guler, "a study on multiple linear regression analysis", in proceedings of the 4th international conference on new horizons in education, 2013, pp. 1-6. [3] k. c. lee, "application of neural network and its extension of derivative to scattering from a nonlinearly loaded antenna", ieee trans. antennas propag., vol. 55, pp. 990-993, 2007. [4] k. c. lee and t. n. lin, "application of neural network to analyses of nonlinearly loaded antenna arrays including mutual coupling effects", ieee trans. antennas propag., vol. 53, pp. 1126-1132, 2005. [5] y. rahmat-samii, j. m. kovitz and h. rajagopalan, "nature-inspired optimization techniques in communication antenna designs", proc. ieee, vol. 100, pp. 2132–2144, 2012. [6] w.-q. wang, h. shao and j. cai, "mimo antenna array design with polynomial factorization", int. j. antennas propag., vol. 2013, p. 358413, 2013. [7] a. sharma, g. das, s. gupta and r. k. gangwar, "quad-band quad-sense circularly polarized dielectric resonatorantenna for gps/cnss/wlan/wimax applications", ieee antennas propag. mag., vol. 60, pp. 57-65, 2018. [8] a. gupta and r. k. gangwar, "hybrid rectangular dielectric resonator antenna for multiband applications", iete tech. rev., vol. 37, pp. 83-90, 2020. [9] a. sharma, p. ranjan and sikandar, "dual band ring shaped dielectric resonator based radiator with left and right handed sense circularly polarized features", iete tech. rev., vol 38, pp. 511-519, 2020. [10] a. k. dwivedi, a. sharma and p. ranjan, "dual-band modified rectangular shaped dielectric resonator antenna with diversified polarization feature", int. j. circuit theory appl., vol. 49, pp. 34343442, 2021. [11] t. suryakanthi, "evaluating the impact of gini index and information gain on classification using decision tree classifier algorithm", int. j. adv. comput. sci. appl., vol. 11, pp. 612-619, 2020. [12] y. sharma, h. h. zhang and h. xin, "machine learning techniques for optimizing design of double tshaped monopole antenna", ieee trans. antennas propag., vol. 68, pp. 5658-5663, 2020. [13] j. gao, y. tian and x. chen, "antenna optimization based on co-training algorithm of gaussian process and support vector machine", ieee access, vol. 8, pp. 211380-211390, 2020. [14] j. p. jacob, "efficient resonant frequency modeling for dual-band microstrip antennas by gaussian process regression", ieee antennas wirel. propag. lett., vol. 14, pp. 337-341, 2014. [15] p. burrascano, s. fiori and m. mongiardo, "a review of artificial neural networks applications in microwave computer‐aided design", int. j. rf microw. c. e., invited article, vol. 9, pp. 158-174, 1999. [16] g. min and y. feng, "calculation of the characteristic impedance of tem horn antenna using support vector machine", in proceedings of the international conference on microwave and millimeter wave technology, 2010, pp. 895-897. 42 p. ranjan, h. gupta, s.yadav, a. sharma [17] j. gao, y. tian, x. zheng, x. chen and m. mrugalski, "resonant frequency modeling of microwave antennas using gaussian process based on semisupervised learning", complexity, vol. 2020, p. 3485469, 2020. [18] p. ranjan, a. maurya, h. gupta, s. yadav and a. sharma, "ultra-wideband cpw fed band-notched monopole antenna optimization using machine learning", prog. electromagn. res. m, vol. 108, pp. 27-39, 2022. 12655 facta universitatis series: electronics and energetics vol. 37, no 3, september 2024, pp. 497 – 516 https://doi.org/10.2298/fuee2403497k © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper enhancing the lvrt capability of grid connected pv system under disturbed conditions using a novel approach aakriti khanna1, anjali garg2, shradha singh parihar3 1,2the northcap university, gurugram, india, 3 greater noida institute of technology, greater noida, india orcid ids: aakriti khanna https://orcid.org/0000-0003-2792-3473 anjali garg https://orcid.org/0000-0001-8157-0379 shradha singh parihar https://orcid.org/0000-0001-8809-4504 abstract. nowadays, the occurrence of low voltages or voltage sags is a common challenge during the operation of a three-phase grid-connected photovoltaic (pv) system. this research paper proposes an innovative approach to enhance the low voltage ride-through (lvrt) capability of such systems. the novel strategy proposed here relies on the concept of eliciting active components (eac) which involves injecting active power during voltage sags, generating reference currents to operate the voltage source inverter and additionally incorporating an active component algorithm for maximizing the power point tracking from the pv array. the system considered for simulation considers a pv module with a maximum power of 382.9 w. the faults considered for the discussion are line-line-line (lll), line-line (ll), line-line-ground (llg) and lineground (lg) faults. the approach also considers low grid voltage and frequent grid voltage fluctuation. the efficiency of this novel control method is evaluated in terms of fault clearance time and is further compared to the traditional controllers in compliance with the indian grid code lvrt requirements. the obtained results indicate that this approach significantly reduces fault clearance time by 69.6% and 20.08% for llg fault & 88.8% and 72% for lg fault in comparison to srft and sogi control strategy, respectively. it also enhances dc link voltage stability in comparison to conventional control strategies during low voltage conditions. the approach ensures that the photovoltaic system remains connected without interruption during fault periods. key words: photovoltaic, dc link voltage, lvrt, voltage sags, active power received april 14, 2024; revised may 21, 2024 and june 06, 2024; accepted june 11, 2024 corresponding author: aakriti khanna the northcap university, gurugram, india e-mail: aaki.0502@gmail.com https://orcid.org/0000-0003-2792-3473 https://orcid.org/0000-0001-8157-0379 https://orcid.org/0000-0001-8809-4504 498 a. khanna, a. garg, s.s. parihar 1. introduction 1.1. motivation the inexpensive and clean nature of the sun has gained attention of the researchers and power developers. for electric power generation, the photovoltaic (pv) industry is the strongest pillar. to meet the ever-increasing demand for power, solar power plants are extensively used with the grid [1-3]. while grid-connected pv systems hold vast potential for renewable energy generation, they often encounter a substantial number of grid faults. these faults, arising from various factors, present challenges to the seamless integration and reliability of the photovoltaic infrastructure within the grid. one of the critical grid faults is the voltage sag. hence, it becomes obligatory to overcome this low voltage condition for a grid connected pv system, failing which causes system failure. 1.2. literature survey every country designs/revises the standard grid codes keeping in mind the fault ride through capabilities [4]. the low voltage ride through (lvrt) capability intimates the dedication of the power generating source to remain in connection with the grid during and after the fault (voltage sag) occurs [5-7]. the importance of lvrt in pv inverters to maintain grid connection during short-term disturbances has been discussed in [8]. this paper delves into control strategies to address challenges during lvrt, emphasizing the significance of grid stability in pv systems. in [9], voltage sag generator (vsg) has been used to explore the impact of renewable energy systems on power quality and stability to focus on lvrt regulations for medium to high voltage applications without considering different grid disturbances. the research in [10] involves experimental validation of various lvrt strategies using actual pv installations. it provides insights into the practical challenges and performance of lvrt strategies under real grid conditions. but, the study focuses on specific case studies and may not generalize across different grid environments and pv system configurations. various studies have been performed by the researchers for the grid faults and for the improvement in the lvrt strategies. proportional integral controller based voltage control has been implemented using the salp swarm algorithm (ssa) in [11], the technique has less ability to adapt to frequent changes. synchronous reference frame-phase locked loop (srf-pll) technique has been presented for the control of inverter [12] but, this is inefficient for disturbed grid conditions such as frequent grid voltage fluctuations. super capacitors are used at the dc side to absorb the unused power resulting in the avoidance of fluctuations in dc voltage, thereby; improving lvrt but the strategy increased the cost [13]. in [14], a neuro-fuzzy control system was implemented to manage voltage and power in a grid-connected photovoltaic (pv) system. this method improves sensitivity, but it results in a highly complex design that necessitates extensive training. in [14], a neuro-fuzzy control system was implemented to manage voltage and power in a grid-connected photovoltaic (pv) system. this method improves sensitivity, but it results in a highly complex design that necessitates extensive training. different controllers have been designed for lvrt capability, a few of which are droop controller, pq controller, sliding controller, dq controller with pi and fuzzy [15-19], etc. instantaneous active reactive control (iarc) has been discussed in [20] which uses the positive sequence (ps) and negative sequence (ns) voltages with acceptable total harmonic enhancing the lvrt capability of grid connected pv system under disturbed conditions… 499 distortion (thd) in normal operation; however, the technique results in high thd under sag condition. the second order generalized integrator (sogi) is effective at detecting grid voltage sags with high robustness and quick dynamic response. however, it falls short in terms of simplicity of implementation [21]. three-level neutral-point clamped (3l-npc) inverters have been utilized for low voltage ride through (lvrt) as shown in [22]. these techniques involve complex filtering processes, leading to significant computational time for fault clearance, and primarily rely on reactive power injection. the marine predator algorithm, as discussed in [23], has been applied to lvrt conditions, focusing on the tuning of proportionalintegral (pi) controllers for inverter control. however, its application is limited to three-phase short circuit (lllg) fault conditions. 1.3. paper contributions it has been seen from the existing literature survey, that the low voltage condition is a major source of system failure. hence, the proposed control strategy for the three phase grid connected pv system deals with riding through such conditions. in this article, different types of faults are considered for the evaluation. below are outlined the major contributions of this research paper: 1) a novel control strategy based on eliciting active components (eac) has been developed for the first time which involves injecting active power during low voltage conditions and hence eliminates the reactive power injection and usage of complex filters. 2) the strategy has been tested for different complexities considering: line-lineline (lll), line-line (ll), line-line-ground (llg), line-ground (lg), low grid voltage and frequent grid voltage fluctuation. 3) the results attained for three phase disturbed grid using the eac strategy have been further compared with the other techniques to validate the proposed technique and is found to be beneficial for the polluted grids. 4) the results ensure the safety of components preventing the disconnection of pv during the fault occurrence with the elimination of zero crossing detector and sample-hold circuitry. 1.4. paper organization this paper is organized in the given flow: section 2 provides lvrt requirement as per indian grid code; section 3 explains the system description with details of modelling the pv array and grid connected pv system. section 4 presents the strategies considered for the analysis. section 5 implements the proposed control strategy and analyzes the results obtained. section 6 compares the results obtained using conventional strategies and the proposed strategy. section 7 concludes the paper with its future scope. 2. lvrt requirement in reference to indian grid code the central electricity authority (cea) of india sets the technical standards [20] for connectivity of the renewable energy sources to the grid. as per cea, lvrt capability is must for the smooth operation of grid connected systems. lvrt requirement for pv penetration as per indian grid code (igc) is shown in fig. 1, which presents the variation 500 a. khanna, a. garg, s.s. parihar in grid voltage (vg) w.r.t time. fig. 1 clearly shows that to avoid power loss in the system, the connectivity of pv system with the grid is mandatory even if the voltage drops below its working value. the voltage profile also shows that the connected pv system must provide the reactive power to the grid till 300ms or till the recovery stage is reached, whichever is acquired first. this is required to keep the voltage source inverter operational and to keep the system stable. fig. 1 lvrt requirement as per indian grid code [24] according to igc, reactive current (iq) and active current (id) injected during the lvrt period are given by (1) and (2) respectively and as mentioned below. iq = { 0 (deadband) 0.85pu ≤ vg ≤ 1.1pu ka ∗ (1 − vg) ∗ in 0.50pu ≤ vg ≤ 0.85pu in vg < 0.50𝑝𝑢 (1) id = {√in 2 − iq 2 in 0.85pu ≤ vg ≤ 1.1pu 0.50pu ≤ vg ≤ 0.85pu 0 vg < 0.50𝑝𝑢 (2) where, in is the rated grid current , ka is adjustment factor (ka ≥ 2) and vg is grid voltage in pu. 3. system description the modeling of the system has been discussed and explained in the following subsections. 3.1. modeling of pv system pv model can be represented by a single diode model [25] or a two diode model. equivalent circuit of pv model formed using a single diode is presented in fig. 2 [26]. enhancing the lvrt capability of grid connected pv system under disturbed conditions… 501 fig. 2 equivalent circuit of single diode pv model [26] where, rs is series resistance, rsh is shunt resistance, id is diode current, ipv is photocurrent. the pv module output current is obtained using characteristic equation (3). i = ipv − is (exp q(v+rsi) nkt − 1) − v+rsi rsh (3) the parameters used in the characteristic equation are boltzmann constant (k), reverse saturation current (is), electron charge (q), series connected cells (n) and operating temperature (t). the pv module characteristics are illustrated in fig.3. (a) i-v characteristic (b) p-v characteristic fig. 3 pv module characteristics the parameters considered in the evaluation of the pv system are given in table 1. 502 a. khanna, a. garg, s.s. parihar table 1 pv system parameters symbol parameter value p mpp maximum power of module 382.9 w v mpp maximum power point voltage of module 54.7 v v oc open circuit voltage of module 64.6 v n number of cells per module 96 i mpp maximum power point current of module 5.76 a r s series resistance of model 389ω i sc short circuit current of module 6.14 a n p number of parallel strings in pv array 12 r sh shunt resistance of model 0.33ω q electron charge 1.6 x 10-19 n s number of series modules per string in pv array 7 k boltzmann constant 1.38 x 10-23 jk-1 t standard temperature 25oc i r standard solar irradiance 1 kw/m2 3.2. modeling of grid connected pv system the modeling of grid connected pv system uses the components: pv array, dc-dc converter which is controlled by maximum power point tracking (mppt) algorithm aiming at extracting maximum power from pv, dc-ac converter, ac grid and load connected at point of common coupling (pcc). the flow diagram illustrating the working is depicted in fig.4. fig. 4 block diagram for working of grid connected pv system [27] the ideal grid and dc link parameters considered in system modeling are tabulated in table 2. table 2 ideal grid and dc link parameters [28] symbol parameter value v rms supply voltage 415 v f g frequency of ideal grid 50 hz c dc dc link capacitance 3000 µf enhancing the lvrt capability of grid connected pv system under disturbed conditions… 503 v dc ref dc link reference voltage 735 v 4. control strategies in this paper, different control strategies have been applied to control the voltage source inverter (vsi) to work under various grid disturbances. the control strategies considered are mentioned below: 4.1. traditional control strategies: 4.1.1. synchronous reference frame theory (srft) 4.1.2. second order generalized integrator (sogi) 4.2. proposed control strategy based on elicitation of active components (eac) 4.1. traditional control strategies traditional control strategies considered for the evaluation purpose are srft and sogi as these have been widely used in the literature by the researchers due to their fast response and effective filtering. the traditional control strategies are explained below: 4.1.1. synchronous reference frame theory the srft control strategy is based on generation of reference currents by transformation between stationary and rotatory frames [29]. fig. 5 presents the structure of srft. the proportional integral (pi) controller in srft is in-charge of adjusting the estimated frequency. fig. 5 structure of srft [29] 4.1.2. second order generalized integrator the sogi [30] technique is based on the generation of two orthogonal signals and works on frequency adaptive quadrature signal generation. the structure of sogi shown in fig.6 generates a pair of orthogonal signals v’ and qv’ which are sent for park transformation to obtain dq parameters. the phase error information contained in vq is 504 a. khanna, a. garg, s.s. parihar controlled to zero with the pi controller. the estimated phase angle θ is then obtained using voltage controlled oscillator (vco). fig. 6 structure of sogi [30] 4.2. proposed control strategy based on elicitation of active components the proposed control strategy has been presented for two modes of operation to validate the results of the control strategy, i.e. i) normal mode (with no voltage sag) ii) lvrt mode the working of the proposed strategy has been depicted in fig. 7. the control strategy is based on elicitation of active components. the active current components are derived from the active segments of the unit templates (ua, ub and uc). in the eac approach, the line-to-line voltages (vab and vbc) are measured and then used to determine the phase voltages. these phase voltages are subsequently converted into terminal voltage (vgabc). the phase voltage is essential for generating the unit template of each phase. the unit template is a reference waveform used in control algorithms to ensure that the inverter operates in synchronization with the grid. by accurately measuring and converting voltages at different stages, the system ensures precise control of the inverter, allowing it to inject the necessary active power to counteract voltage sags and maintain stable operation during faults. this meticulous process enhances the system's ability to ride through low voltage conditions effectively. the unit templates and the load currents (ila, ilb and ilc) of the three phases now elicit the respective active current component. in fig.7, the three active current components (ila(e), ilb(e), ilc(e)) contribute to the evaluation of total active current gain (itacg). additionally, to maintain the stability of the dc link voltage, a comparison is conducted between the reference dc link voltage and the measured dc link voltage to find the dc link current gain (id). the two gains i.e. dc link current gain and total active current gain result in the formulation of the reference current gain (ir). the unit templates are then multiplied with the reference current gains to calculate the reference grid currents for each phase. following this, the reference grid currents are compared with the actual grid currents to generate gate pulses which are required for the proper functioning of vsi for both modes of operation. the eac strategy has minimum mathematical blocks, which give a high advantage to the implementation of the control strategy ensuring minimum oscillations. the strategy handles the disturbances by injecting the active power in the grid. enhancing the lvrt capability of grid connected pv system under disturbed conditions… 505 fig. 7 block diagram of the proposed control strategy eac the unit template for each phase is obtained using (4)-(6). ua = vga vg (4) ub = vgb vg (5) uc = vgc vg (6) where, vga, vgb and vgc are the amplitude of respective phase voltages at pcc. the amplitude of the voltage at pcc (vg) can be obtained using (7). vg = √ 2 3 (vga 2 + vgb 2 + vgc 2 ) (7) the elicitation of active current components for all phases is based on (8)-(10). 506 a. khanna, a. garg, s.s. parihar ila(e) = ∫ (ila.ua)d(wt) wt 0 ∫ (ua.ua)d(wt) wt 0 (8) ilb(e) = ∫ (ilb.ub)d(wt) wt 0 ∫ (ub.ub)d(wt) wt 0 (9) ilc(e) = ∫ (ilc.uc)d(wt) wt 0 ∫ (uc.uc)d(wt) wt 0 (10) the calculation of total active current gain is done using the average of individual active current components as in (11). itgac = ila(e)+ilb(e)+ilc(e) 3 (11) the reference current gain is calculated using (12) ir = itgac + id (12) reference grid currents are calculated by multiplication of (12) and unit templates for each phase ((4)-(6)). 5. implementation & results in this section, the performance evaluation of the proposed eac strategy considering various types of faults has been carried out based on simulation results using matlab/simulink tool. to enhance the lvrt capability, the eac strategy has been employed for the system presented in fig. 8(a). the detailed simulation of the proposed control strategy has been presented in fig. 8(b). fig. 8(a) eac strategy based simulink model of three phase system enhancing the lvrt capability of grid connected pv system under disturbed conditions… 507 fig. 8(b) detailed simulation of proposed control strategy fig. 8 simulation of the system using eac control strategy the evaluation results are simulated considering two different modes of operation: (i) normal operation (with no voltage sag) (ii) lvrt operation (i) normal operation: the operation of grid connected system with no voltage sag/ no disturbance is known as the normal operation. the grid connected pv system is tested for standard test conditions (stc), i.e. 1000 w/m2 and 25oc. the system is also tested by varying the solar insolation of 700 w/m2 to verify the working of the system designed under varying insolation conditions. fig. 9 presents the output of the pv for the normal 508 a. khanna, a. garg, s.s. parihar mode of operation. the graphs in fig. 9 presented for two solar irradiations are (a)solar irradiance (w/m2), (b)pv voltage (v), (c)pv power (w), (d)grid voltage (v), grid current (a), (e)grid side active power pgrid (w), grid side reactive power qgrid (var) and (f)dc link voltage vdc (v) with respect to time (sec). (a)solar irradiance (b) pv voltage (c) pv power (d) grid voltage and grid current (e) active & reactive power (f) dc link voltage fig. 9 pv system during normal mode of operation it clearly infers that when there is no grid fault, the system operates optimally depending on the solar insolation captured by the pv source. the dc link voltage stability remains effectively preserved in absence of any grid faults. (ii) lvrt operation: lvrt operation is the system operation when grid connected pv system undergoes grid disturbances. the disturbances considered for the evaluation are the following 1000 w/m2 700 w/m2 1000 w/m2 1000 w/m2 700 w/m2 1000 w/m2 1000 w/m2 700 w/m2 1000 w/m2 ir ra d ia n c e (w /m 2 ) 1000 w/m2 700 w/m2 1000 w/m2 enhancing the lvrt capability of grid connected pv system under disturbed conditions… 509 faults: lll, ll, llg, lg, low grid voltage and frequent grid voltage fluctuation. for lll fault and ll fault: lll fault is line-line-line grid fault in which all the lines get short-circuited while ll fault is line-line grid fault in which two lines get short circuited. these faults mainly arise because of the breakdown of the insulation between the phases of the grid. fig. 10 shows the results which include grid voltage, grid current, active & reactive power of grid, dc link voltage plot using proposed eac strategy for all the considered parameters. in this operation, stc are used for lll fault which occurs for the time span 0.45s to 0.6s and ll fault which occurs from 1.3 s to 1.45 s. (a)solar irradiance (b) pv voltage (c) pv power (d) grid voltage and grid current (e) active & reactive power (f) dc link voltage fig. 10 eac strategy based pv system during lll and ll fault condition the results presented in fig. 10 depict that the simulated pv system remains in connection with the grid in reference to the igc when the fault occurs. the restoration time is less than 225 ms which is less than acceptable time of 300 ms (as per igc). no fault no fault no fault ll lll no fault no fault no fault ll lll no fault ll lll no fault no fault no fault ll lll no fault no fault no fault ll lll no fault no fault 510 a. khanna, a. garg, s.s. parihar for llg fault and lg fault: llg fault is the line-line-ground grid fault in which the two lines get short-circuited with earth while lg fault is the line-ground grid fault in which one of the lines gets short circuited with earth. fig. 11 demonstrates the results including the dc link voltage, pv voltage, power, active & reactive power of grid using the eac strategy for the standard test conditions. here, llg fault occurs between 0.5s to 0.9s and lg fault occurs from 1.4s to 1.6 s. (a)solar irradiance (b) pv voltage (c) pv power (d) grid voltage and grid current (e) active & reactive power (f) dc link voltage fig. 11 eac strategy based pv system during llg and lg fault condition as shown in fig. 11, pv system remains connected and dc voltage stability is recovered within the permissible fault period of llg and lg fault as per igc. no fault no fault lg no fault no fault no fault lg llg no fault llg no fault no fault no fault lg llg no fault no fault no fault lg llg enhancing the lvrt capability of grid connected pv system under disturbed conditions… 511 for low grid voltage: low grid voltage is the condition of the dip in amplitude of grid voltage. fig. 12 shows the pv system with proposed eac strategy for standard test conditions with low grid voltage having amplitude 0.7pu for the time period 0.8s to 1.2s. (a)solar irradiance (b) pv voltage (c) pv power (d) grid voltage and grid current (e) active & reactive power (f) dc link voltage fig. 12 eac strategy based pv system with 0.7 pu amplitude of grid voltage from fig. 12, it is evident that as the grid voltage decreases, the grid current rises. the proposed eac in this case facilitates an increase in grid active power to maintain grid 1 pu 0.7 pu 1 pu 1 pu 0.7 pu 1 pu 1 pu 0.7 pu 1 pu 1 pu 0.7 pu 1 pu 1 pu 0.7 pu 1 pu 1 pu 0.7 pu 1 pu 512 a. khanna, a. garg, s.s. parihar stability, regulate dc link voltage and prevent pv disconnection. this strategy is crucial for sustaining grid stability. for frequent fluctuation in grid voltage with time: here, the disturbance considered is frequent fluctuation in amplitude of grid voltage for the system under examination. fig. 13 shows the system output for fluctuating values of grid voltages (1pu, 1.1pu, 0.6pu and 0.4pu) at different instants of time for standard test conditions. (a)solar irradiance (b) pv voltage (c) pv power (d) grid voltage and grid current (e) active & reactive power 1 pu 1 pu 1 pu 1 pu 1.1 pu 1.1 pu 1.1 pu 1.1 pu 1 pu 1 pu 1 pu 1 pu 0.6 pu 0.6 pu 0.6 pu 0.6 pu 1 pu 0.4 pu 1 pu 0.4 pu 1 pu 0.4 pu 1 pu 0.4 pu 1 pu 1 pu 1 pu 1 pu 1 pu 1 pu 1.1 pu 1.1 pu 1 pu 1 pu 0.6 pu 0.6 pu 1 pu 0.4 pu 1 pu 0.4 pu 1 pu 1 pu enhancing the lvrt capability of grid connected pv system under disturbed conditions… 513 (f) dc link voltage fig. 13 eac strategy based pv system with fluctuating values of amplitude of grid voltage fig. 13 depicts the performance of the system employing eac amidst voltage fluctuations. the system achieves stable dc voltage, effectively preventing pv disconnection during fault occurrences and ensuring reconnection within the specified timeframe outlined in the igc. 6. comparative analysis of proposed strategy with traditional methods the proposed eac control strategy is simulated on three phase system and compared based on time taken for the fault clearance with conventional strategies like srft [31] and sogi [22,32]. the comparative analysis is tabulated in table 3 for different fault scenarios. table 3 comparative analysis of proposed control strategy with the conventional control strategies based on fault clearance time type of disturbance srft [31] sogi [22,32] proposed eac percentage improvement w.r.t fault clearance time eac with srft[31] eac with sogi[22,32] fault lll 625ms 225ms 215ms 65.6 % 4.44 % ll 625ms 265ms 225ms 64% 15.09% llg 625ms 240ms 190ms 69.6 % 20.8% lg 625ms 250ms 70ms 88.8 % 72% frequent fluctuation of grid voltage 0.7 pu 200ms 1.1 pu 210ms from table 3, it is clear that: 1) fault clearance time taken by proposed eac is very less in all the fault occurrence conditions. 2) for lll fault: eac takes 65.6% and 4.44% less % time as compared to srft and sogi control strategies respectively. 1 pu 1.1 pu 1 pu 0.6 pu 1 pu 0.4 pu 1 pu 514 a. khanna, a. garg, s.s. parihar 3) for ll fault: eac takes 64% and 15.09% less % time as compared to srft and sogi respectively. 4) for llg fault: the improvement in fault clearance time is 69.6% and 20.8% with srft and sogi strategies respectively using eac control strategy. 5) for lg fault: the % reduction in fault clearance is 88.8% and 72% for srft and sogi respectively using eac. 6) additionally, the proposed eac strategy effectively handles frequent fluctuations in amplitude of grid voltage. 7. conclusion this research paper proposed an innovative control approach, elicitation of active components, designed to uphold dc link voltage and swiftly rectify faults during instances of low voltage in grid connected pv systems. the system's efficacy was evaluated across various fault scenarios: lll, ll, llg, lg, low grid voltage and frequent voltage fluctuations. the results indicate that the eac approach promptly restores connection within the stipulated timeframes outlined in the igc following a fault occurrence, showing a substantial % reduction in fault clearance time concerning conventional control strategies, thus ensuring uninterrupted grid connection. the comparative analysis against conventional controllers, namely, srft and sogi, revealed that the proposed strategy excels in both restoring dc link voltage and fault clearance time. the control strategy proposed in the paper shows maximum improvement in % reduction of fault clearance time in lg fault with 88.8% and 72% time reduction with respect to srft and sogi control strategy respectively. the findings underscore the superior performance of the proposed approach in terms of improved stability and quick fault clearance time under various faulty conditions. the promising results achieved by the eac control strategy open up several avenues for future research like real-time deployment and integration with hybrid renewable systems. further, this work can also be extended for cost benefit analysis and different types of situations like varying solar insolations and frequency fluctuations. references [1] g. lammert, d. premm, l.d.p. ospina, j.c. boemer, m. & t.v. cutsem, "control of photovoltaic systems for enhanced short-term voltage stability and recovery", ieee trans. energy convers., vol. 34, pp. 243– 254, 2019. [2] b. stojčetović, m. petković, & s. đurović, "assessment of renewable energy sources using mcdm method: case study", facta universitatis, series: electronics and energetics, vol. 36, no. 3, pp. 353–363, 2023. [3] m. preradovic, "solar energy potential in freiburg, graz, maribor, banja luka, niš, and athens", facta universitatis, series: electronics and energetics, vol. 35, no. 3, pp. 393–403, 2022. [4] k. zeb, s. u. islam, i. khan, w. uddin, m. ishfaq, t.d.c. busarello, s.m. muyeen, i.ahmad & h.j. kim, "faults and fault ride through strategies for grid-connected photovoltaic system: a comprehensive review", renewable and sustainable energy reviews, vol. 158, p. 112125, 2022. [5] a. marinopoulos, f. papandrea, m. reza, s. norrga, f. spertino, & r. napoli, "grid integration aspects of large solar pv installations: lvrt capability and reactive power/voltage support requirements", ieee trondheim power tech, trondheim, norway, pp. 1–8, 2011. [6] e. afshari, g.r. moradi, r. rahimi, b. farhangi, y.yang, f. blaabjerg, & s.farhangi, "control strategy for three-phase grid-connected pv inverters enabling current limitation under unbalanced faults", ieee trans. ind. electron., vol. 64, no. 11, pp. 8908–8918, 2017. enhancing the lvrt capability of grid connected pv system under disturbed conditions… 515 [7] m.a. khan, a. haque, & v.s.b. kurukuru, "dynamic voltage support for low-voltage ride-through operation in single-phase grid-connected photovoltaic systems", ieee transactions on power electronics, vol. 36, no. 10, pp. 12102–12111, 2021. [8] j. joshi, a.k. swami, v. jately, & b. azzopardi, "a comprehensive review of control strategies to overcome challenges during lvrt in pv systems", ieee access, vol. 9, pp. 121804–121834, 2021. [9] y. yang, f. blaabjerg, & z. zou, "benchmarking of voltage sag generators", in proceedings of the iecon 2012-38th annual conference on ieee industrial electronics society, 2012, pp. 943–948. [10] j.p. roselyn, c.p. chandran, c. nithya, d. devaraj, r. venkatesan, v. gopal, & s. madhura, "design and implementation of fuzzy logic based modified real-reactive power control of inverter for low voltage ride through enhancement in grid connected solar pv system", control engineering practice, vol. 101, 2020. [11] o.s. elazab, m. debouza, h.m. hasanien, s.m. muyeen, & a. al-durra, "salp swarm algorithm-based optimal control scheme for lvrt capability improvement of grid-connected photovoltaic power plants: design and experimental validation", iet renew. power gener., vol. 14, no. 4, pp. 591–599, 2020. [12] s. bagchi, d. chatterjee, r. bhaduri, & p.k. biswas, "an alternative inverter control strategy for grid connected solar photovoltaic (spv) system", in proceedings of the ieee 9th power india international conference (piicon), sonepat, 2020, pp. 1–5. [13] h. tian, f. gao, & c. ma, "novel low voltage ride through strategy of single-stage grid-tied photovoltaic inverter with super capacitor coupled", in proceedings of the power electronics and motion control conf. ieee (ipemc), harbin, china, 2012, vol. 2, pp. 1188–1192. [14] f.-j. lin, k.-c. lu, t.-h. ke, b.-h. yang, & y.-r. chang, "reactive power control of three-phase gridconnected pv system during grid faults using takagi–sugeno–kang probabilistic fuzzy neural network control", ieee trans. ind. electron., vol. 62, pp. 5516–5528, 2015. [15] m.m. hasaneen, m.a.l. badr, & a.m. atallah, "control of active/reactive power and low-voltage ride through for 40 kw three-phase grid-connected single-stage pv system", in proceedings of the 24th international conference & exhibition on electricity distribution (cired), 2017, pp.1655–1659. [16] m.p. petronijević, c. milosavljević, b. veselić, s. huseinbegović, & b. peruničić, "discrete time quasisliding mode-based control of lcl grid inverters", facta universitatis, series: electronics and energetics, vol. 36, no. 1, pp. 133–158, 2023. [17] h.m. hasanien, "an adaptive control strategy for low voltage ride through capability enhancement of gridconnected photovoltaic power plants". ieee trans. power syst., vol. 31, no. 4, pp. 3230–3237, 2016. [18] s. mikkili, & a.k. panda, "instantaneous active and reactive power and current strategies for current harmonics cancellation in 3-ph 4-wire shaf with both pi and fuzzy controllers", energy power eng., pp. 285–298, 2011. [19] x. zhao, j.m. guerrero, m. savaghebi, j.c. vasquez, x.wu, & k.sun, "low-voltage ride-through operation of power converters in grid interactive microgrids by using negative-sequence droop control", ieee trans. power electron., vol. 32, no. 4, pp. 3128–3142, 2017. [20] p. rodriguez, a.v. timbus, r. teodorescu, m. liserre, and f. blaabjerg, "flexible active power control of distributed power generation systems during grid faults", ieee transactions on industrial electronics, vol. 54, no. 5, pp. 2583–2592, 2007. [21] j. xu, h. qian, y. hu, s. bian, & s. xie, "overview of sogi-based single-phase phase-locked loops for grid synchronization under complex grid conditions", ieee access, vol. 9, pp. 39275–39291, 2021. [22] h.d. tafti, a.i. maswood, g. konstantinou, j.pou, k.kandasamy, z.lim, & g.h.p. ooi "low-voltage ride-thorough capability of photovoltaic grid-connected neutral-point clamped inverters with active/reactive power injection", iet renew. power gener., vol. 11, no. 8, pp. 1182–1190, 2017. [23] h.h. ellithy, h.m. hasanien, m. alharbi, m.a. sobhy, a.m. taha, & m.a. attia, "marine predator algorithm-based optimal pi controllers for lvrt capability enhancement of grid-connected pv systems", biomimetics, vol. 9, no. 2, 2024. [24] indian grid code-cea [25] h.m. ridha, h. hizam, s. mirjalili, m.l. othman, m. e. ya’acob, & l. abualigah, "a novel theoretical and practical methodology for extracting the parameters of the single and double diode photovoltaic models", ieee access, vol. 10, 2022. [26] m.g. villalva, j.r. gazoli, & e.r. filho, "comprehensive approach to modeling and simulation of photovoltaic arrays", ieee transactions on power electronics, vol. 24, no. 5, pp. 1198–1208, 2009. [27] a. khanna, a. garg, & s. madichetty, "harmonic performance analysis for different loads with and without pv", in: singhal, p., kalra, s., singh, b., bansal, r.c. (eds) recent developments in electrical and electronics engineering. lecture notes in electrical engineering, vol. 979. springer, singapore, 2023. [28] j. xu, h. qian, s. bian, y. hu, & s. xie, "comparative study of single-phase phase-locked loops for gridconnected inverters under non-ideal grid conditions", csee journal of power and energy systems, vol. 8, no. 1, pp. 155–164, 2020. 516 a. khanna, a. garg, s.s. parihar [29] p. karuppanan, & k. mahapatra, "a novel srf based cascaded multilevel active filter for power line conditioners", in proceedings of the 2010 annual ieee india conference (indicon), pp.1–4, 2010. [30] a. nagliero, r. a. mastromauro, m. liserre, & a. dell'aquila, "monitoring and synchronization techniques for single-phase pv systems", in proceedings of the speedam 2010, pp. 1404–1409. [31] a.q.al-shetwi, m.z. sujod, & f. blaabjerg, "low voltage ride-through capability control for single-stage inverter-based grid-connected photovoltaic power plant", sol. energy, vol. 159, pp. 665–681, 2018. [32] m. talha, a. amir, s.r.s. raihan, & n.a. rahim, "grid‐connected photovoltaic inverters with low‐ voltage ride through for a residential‐scale system: a review", international transactions on electrical energy systems, vol. 31, no. 10, 2021. 13170 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 151 162 https://doi.org/10.2298/fuee2501151m © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper performance analysis of model for fault diagnosis in radiation-hardened memories using svdd-pso vinita mathur1, sanjay kumar singh1, aditya kumar singh pundir2 1amity university rajasthan, jaipur, india 2arya college of engineering & it, jaipur, india orcid ids: vinita mathur https://orcid.org/0000-0002-4132-9609 sanjay kumar singh https://orcid.org/0000-0002-4426-3895 aditya kumar singh pundir https://orcid.org/0000-0002-6762-9263 abstract. radiation-hardened memories are extensively used in critical commercial applications such as nuclear power plants, industrial systems, and space missions for reliable data storage and retention. while numerous algorithms have been proposed for diagnosing faults in these memories, most focus less on fault optimization. to address this gap, this paper presents a performance analysis of a fault diagnosis model based on the support vector data description–particle swarm optimization (svdd-pso) algorithm for fault optimization. the proposed fault diagnosis model is designed using specific parameters tailored for radiation-hardened memories. the results demonstrate that the methodology achieves higher accuracy, optimal fitness value, and reduced time penalty when diagnosing fault samples. the model's performance is further evaluated using logistic regression, with a receiver operating characteristic (roc) curve accuracy of 96%, reflecting a balanced trade-off between the true positive rate (tpr) and false positive rate (fpr). the higher tpr and lower fpr confirm that the proposed model is well-suited for fault diagnosis in radiation-hardened memory systems. key words: fault diagnosis model, particle swarm optimization, radiation hardened memories, support vector data description. 1. introduction nowadays, memories play an integral role to process data over time in embedded systems. static & dynamic memories are generally used in embedded systems that are assembled with advanced technology. these memories are club with the iot network. iot (internet of things) is linked with the number of devices. hence, complexity of networks increases with certain issues including security, authenticity, dependability, and received november 4, 2024; revised december 8, 2024; accepted january 2, 2025 corresponding author: vinita mathur amity university rajasthan, jaipur, india. e-mail: vinita.mathurdec@gmail.com https://orcid.org/0000-0002-4132-9609 https://orcid.org/0000-0002-4426-3895 https://orcid.org/0000-0002-6762-9263 mailto:vinita.mathurdec@gmail.com 152 v. mathur, s. k. singh, a. k. s. pundir scalability [1-2]. in commercial applications like in industries, military, nuclear power and space applications these memories are suitable due to its high density. these memories may suffer from sensitivities to total ionize single event & prompt dose effect. components in memories are not designed for harsh space environments as they contain several large customized memory-based arrays in the individual ram cells and latches [3-4]. radiation-hardened memories [5] are the magneto resistance ram or mram and non-volatile conductor memories [6]. these memories can resist damage due to high levels of ionizing radiation which is caused due to particle radiation and high level of em radiation energy [7]. there are certain issues regarding radiation memories as the high levels of ionizing radiation will create some special design challenges [8]. a certain type of fault will be generated like a single charge particle in which it will lose lots of electrons which will cause electronic noise and signal spikes [9]. so, for diagnosis this issue a fault model is designed which will detect the fault in memory on the basis of memories parameters [10]. these faults can be optimized with the help of different optimization technique like genetic algorithms, artificial bee colony, particle swam optimization, ant colony optimization, squirrel search algorithm, and cuckoo search algorithm. but in this paper we have use svdd-pso optimization because is provide better accuracy and optimal value for fault model as compare to other fault optimization techniques [11]. the svdd-pso model's performance is limited by its dependency on parameter selection and convergence speed in complex fault scenarios. additionally, its scalability for large-scale memory systems and multi-fault detection requires further investigation. the model can be improved by incorporating adaptive parameter tuning, hybrid metaheuristic techniques, and dynamic threshold mechanisms. additionally, integrating iotbased real-time monitoring and enhancing scalability for multi-fault detection in large memory systems can further optimize performance. this paper is categorized into following sections. section 1 provides an introduction to the basic features and use of radiation hardened memories. section 2 describes the conventional svdd and pso algorithms. section 3 explains the hybrid svdd-pso algorithm with the help of a flow chart. section 4 describes the proposed model for analysis of svdd-pso. section 5 provides the optimized fault diagnosis in memories using svdd-pso. section 6 shows the results and discussion with the help of a comparative study. section 7 describes the conclusions and future scope of the analysis. 2. conventional svdd and pso algorithm support vector data description is a machine-learning method for single-class classification and outer detection [12-13]. it deals with a huge amount of data and finds a hyper sphere in the feature space that encloses the normal instances, while minimizing the volume of the hyper sphere [14]. this characteristic makes svdd be used in optimal fault detection. the basic structure of this algorithm is consisting of kernel parameter kf and error correcting penalty coefficient ec [15]. the radial base function kernel measures the similarity based on the euclidean distance between data points. it is commonly used and is suitable for capturing non-linear relationships; the lower the value kf more accurate the system will be. error-correcting penalty coefficient ec is determined by the upper boundary condition of the lagrange multiplier [15].this algorithm is defined as data with dimension (d) for x  rd. performance analysis of model for fault diagnosis in radiation-hardened... 153 rd xjixj (1) where j = 1,2,3.....n (known trained data set sample) the data set requires finding the minimum hyper sphere with a centre c and radius r in high-dimension system f with nonlinear sampling and this system includes all the data set. the main objective of the svdd method is to reduce the radius r of the system at the same time also reduce the singular value by adding relaxation variable εj to manage the trade-off between the volume of the sphere and the error rate, with the help of the ec error penalty coefficient. now for the quadratic system, 2min ( , , ) n c j j f r c j r e = +  (2) 2 2|| ||xj c r j−  + (3) equations (1) and (2) are solved through the lagrange function for optimization of the problem. 2 2 2 1 1 ( , , ) ( ) || || n n j j j c j j j j j j j j r,c, r e r x c        = =  = + − + − −  (4) here, αj, and λj are the lagrange multiplier. after solving the above equation (4), assuming the partial derivative result is 0, then using equation (5) and (6), in dual from we can be obtained equation 2.  == = n j jj n j j c&1 1 (5) c 0e for (0 )j j j ce  =−   (6) 1 1 1 ( , , , , ) ( ) ( , ) n n n j j j j j j j j k j k j j k max r c           = = =  =  −    (7) with the help of mercer’s theorem equation (3) is modified into equation (7), which satisfies the kkt (karush kuhn tucker) optimization condition, solving the above equation (8) ( ) 2 2 j 2 2 j 2 2 j for 0 for (0 ) for j c j c c r j c r e c r e       −  = − =   −  = (8) we get these three conditions for αj, now to calculate the distance function centre to the test point is d2(x). f(x) defines whether the sample is in range or not, if f(x)≥0 then the sample is in range otherwise not. 154 v. mathur, s. k. singh, a. k. s. pundir 2 1 1 1 d ( ) ( , ) 2 ( , ) ( , ) n n n j k j j k j k j k j j k           = = = =  −  +    (9) 2 2 2 2f( ) sgn( || || ) sgn( ( ))jr c r d  = − − = − (10) 2.2. pso (particle swarm optimization) particle swarm optimization is a population-based optimizing technique that was designed by kennedy & eberhart in 1995[15]. this algorithm is inspired by swarm intelligence like fish schooling, and bird flocking behavior. in pso inertia weight is the most important parameter as it controls the momentum of the particle by weighing the contribution of the previous velocity.pso is a computation method to find the optimal solution for the specific parameter given by the system by fulfilling all the design requirements and considering the best solution in terms of optimization. radiation-hardened memories are prone to various types of faults, including stuck-at faults (saf), coupling faults (cf), and transition faults (tf), each of which can compromise data integrity and system reliability. safs occur when a memory cell is stuck at a constant logical value (0 or 1), preventing it from changing states, which leads to incorrect data storage. coupling faults arise when the state of one memory cell influences the state of another, often due to interference in densely packed memory arrays. transition faults, on the other hand, involve the failure of a memory cell to transition between logic states within the required time frame, resulting in delayed or incorrect data processing [16-17]. the particle swarm optimization (pso) algorithm plays a crucial role in optimizing fault detection for these fault types by searching for optimal diagnostic parameters in multi-dimensional solution spaces [18]. for safs, pso identifies patterns in voltage and current responses to detect stuck cells accurately. in the case of cfs, the algorithm optimizes detection thresholds to account for cell-to-cell interactions, minimizing false positives. for tfs, pso adjusts timing parameters to distinguish between normal and faulty transitions, ensuring high detection accuracy with minimal time penalty [19-20]. by leveraging pso, the fault diagnosis model achieves improved accuracy, faster convergence, and better scalability for radiation-hardened memory systems. to make svdd method optimal a pso algorithm is inculpated into the svdd to optimize its parameters. a generalized algorithm for pso: step 1: initialize the particle position with a uniformly distributed random vector xj for upper bounded and lower bounded conditions, where j is the number of particles j=1,2, 3, ……… n. step 2: initialize the particle's best-known position to its initial best position. pj←xj, if f(pj) ≤f (pg), then update the particle best position pg ←pjhere, pj particle best position and pg is in the global best position. step 3: initialize the particle velocity vj for boundary condition (-|ub-lb|, |ub-lb)| step 4: update the dimension of each particle, random numbers r1 and r2 between (0,1) and correction factor c1,c2 . step 5: calculate the velocity 2 21 1 1( ) ( )j j j j j g jc r pb c r p    + = + − + − (11) performance analysis of model for fault diagnosis in radiation-hardened... 155 step 6 update the particle's best-known position. 11j ++=+ jj (12) step7: if f(pj) < f(pg) then g ← pj is the best particle position. now, the fitness function of the system is calculated using leave one out method which is a cross-validation technique used to achieve the display of svdd [20], by training the model on all data points except one and then testing it on the left-out data point. this process is repeated for each data point in the dataset, and the overall performance is evaluated shown in equation (13)  = = n j kkkf 1 )(( n 1 (f) (13) where, fk: classifier of data sample for training n − 1, fk (k): result of sample data, fk (k): actual classification. 3. hybrid svdd-pso algorithm fig. 1 shows the flow of the svdd-pso algorithm process [21-22], this algorithm uses a particle swarm's optimization algorithm which is summed up with the svdd model to provide the sample data set parameter optimization with the kernel function. fig.1 flow of svdd-pso algorithm process 156 v. mathur, s. k. singh, a. k. s. pundir step 1: initialize the input parameter for svdd-pso like correction factor c1=c2=1.5, maximum number of iteration tmax=64, inertia weight w=1. step 2: optimize the parameter kernel function kf and ec error correcting penalty coefficient are taken as the combination of iterative pso optimization variable in the svdd model and update fault diagnostic model if the fault arises. if nofault arises then system memories are fault free. step 3: update pso-svdd parameters: initial velocity, initial position distance using equation (10). step 4: iterative calculation for fitness value p(f) using equation (14) for each particle. step 5: update global optimal location, update velocity (vj + 1) using equation (12), update position (xj + 1) using equation 13. step 6: check whether the output reaches the optimal parameter combination of the svdd model if not then repeat step 4. step 7: using the optimal values of parameter in the svdd model. 4. proposed model for the analysis of svdd-pso fig. 2 shows the proposed work state of the art; an analysis of radiation hardens memories for fault detection is conducted with the help of the optimization technique, svdd-pso (support vector data descriptionparticle swarm optimization). results show that the svdd-pso provides better optimal fitness function 12 as compare to other optimization techniques. fig. 2 proposed work architecture we have considered a memory of size 512 (8*8*8) for fault detection and to find the optimal solution for the faults that arises. once the fault arises then finding which fault will be repair first. with the help of fault diagnosis model, several faults will be generated like stuck at fault, transition fault, address decoder fault, and other types of coupling faults based on radiation harden memory effect like ionization effect, transient dose effect, system generated emp effects, digital damage (set). there are some other effects also which is part of the transient dose effect in radiation-hardened memories: radiation hardened memories fault diagnosis model optimization of faults repair process (ecc) parameters for fault diagnosis ionization effect transient dose effect (set, seu, sel, sesb, segr) performance analysis of model for fault diagnosis in radiation-hardened... 157 single event upset (seu): in this high energy particle striking a memory cell which causes a flip in the state of the memory cell from 1 to 0. this type of fault in memory is called transition fault. single event functional interrupt (sefi): this effect occurs when a single event interrupts the memory cell's normal operation. this type of fault in memory is called stuck at fault. single event transient (set): these faults arise when there is temporary fluctuation in the memory cell caused by high energy particles, which leads to invalid data. these faults can be stuck at fault or transition fault. we have considered 8*8*8 memory size with 64 faults as shown in table 1. these faults are obtained by the fault diagnosis model parameters as shown in table 2. in this model, we have considered certain fault parameters based on which these fault are obtained. we have analyzed only stuck at fault in this paper using the svdd-pso method. once the faults are identified and optimized then these faults are repaired using error correcting code techniques [21-23]. table 1 stuck at faults in memory s.no. fault type memory size faults arise banks 1 stuck at faults 8*8*8(512 cell) 64 32 32 table 2 fault parameters s.no fault parameters types of faults occurs 1 single event upset saf, tf 2 single event functional interrupt saf 3 digital damage tf,saf 4 ionization effect address decoder and coupling faults 5. optimized fault diagnosis in memories using svdd-pso an 8*8*8=512 cell memory size is considered within the fault diagnosis model. table 1 shows 64 faults are extracted from the fault's characteristic parameters. these faults are divided into two banks of 32-bit size. we have assumed three cases of fault arise as shown in table 3. case 1 for the total faults arises, case 2 for upper half bank faults arises and case 3 for lower half bank faults arises. the fitness function for three cases are measured using equation (14) and (15), gaussian noise function is used for the absolute value of a random variable replace by a uniform random variable for the fault fitness function. 22 )100*(100)(fitness += (14) 2)*)exp(-norm(*(1))@(fun = (15) 158 v. mathur, s. k. singh, a. k. s. pundir table 3 cases of fault position cases lower bound condition upper bound condition faults position case 1(total faults, 64) 1,2,3,4,5,6 59,60,61,62,63, 64 2,5,10,16,28,32,38 42,48,52,59,62 case 2(upper half faults, 32) 1,2,3,4,5,6 27,28,29,30, 31,32 2,5,10,11,12,15,20,2 4 26,27,28,32 case 3(lower half faults, 32) 33,34,37,38,39,40 45,48,52,58,60 62 33,34,37,38,39,40,45 ,48,52,58,60,62 6. results and discussion a three case of the fault data set shown in table 1 as input to the svdd-pso model; all data faults point is below the threshold level range in each case as shown in fig. 3 to fig. 5. the distance between these fault data points is calculated using equation (9). in these figures, 5 sets of faults are inputs into the svdd-pso model, and 4 sets of faults are below the threshold level which indicates that they met the fault diagnosis model parameters. 1 2 3 4 5 10 3 10 4 10 5 10 6 fault data point d is ta n c e threshold distance fig. 3 case 1(total faults, 64) performance analysis of model for fault diagnosis in radiation-hardened... 159 1 2 3 4 5 10 3 10 4 10 5 10 6 data fault points d is ta n c e threshold distance fig. 4 case 2(upper half faults,32) 1 2 3 4 5 10 2 10 3 10 4 10 5 fault data point d is ta n ce threshold distance fig. 5 case 3(lower half faults, 32) 160 v. mathur, s. k. singh, a. k. s. pundir fig. 6 shows the comparison between three optimization techniques used for finding the value of fitness function. particle swarm optimization, squirrel search algorithm support vector data description and support vector data description – particle swarm optimization. as from table 4 shows that the svdd-pso better fitness function than the other two algorithms. fig. 6 value of fitness function w.r.t no. of iteration a svdd-pso model performance is also evaluated with help logistic regression. fig. 7 show the roc receiver operating characterize curve which provides the tradeoff between tpr and fpr for the model using the threshold probability [24-26]. table 4 algorithms used s.no. algorithm used value of fitness 1 pso 26.5 2 ssa-svdd 22 3 svdd-pso 20 tpr is the true positive rate which is ratio of true positive data to the sum of true positive and false negative where fpr is the false positive rate which is the ratio of false positive data to the sum of false positive data and true negative data as shown in equation (16) and (17). ivefalsenegatvetruepositi vetruepositi + =tpr (17) vetruenegatiivefalseposit ivefalseposit + =tpr (18) performance analysis of model for fault diagnosis in radiation-hardened... 161 fig. 7 roc between tpr and fpr from fig. 7 roc (receiver operating characterize curve) of the system model is 96% which is a tradeoff between true positive rate and false positive rate for the svdd-pso model using the threshold probability. a proposed model shows higher tpr and lower fpr rate, which show that the model is fit for the fault diagnosis for radiations harden memories. 7. conclusions in this work, present a novel fault diagnosis and repair methodology for radiationhardened memories using the svdd-pso (support vector data description particle swarm optimization) algorithm is proposed to optimize fault diagnosis and repair processes in radiation-hardened memories. a fault diagnosis model is designed using key parameters based on the characteristics of these memories. five sets of faults are input into the svdd-pso model, out of which four sets fall below the threshold level, indicating that they meet the fault diagnosis model's parameters. the results demonstrate that the proposed model achieves better accuracy and an optimal fitness value with a reduced time penalty. additionally, the model's performance is evaluated using logistic regression, and the receiver operating characteristic (roc) curve of the system shows a 96% accuracy rate, reflecting a balanced trade-off between the true positive rate (tpr) and the false positive rate (fpr). the proposed model exhibits a higher tpr and lower fpr, indicating its suitability for fault diagnosis in radiation-hardened memories. overall, the results confirm that the proposed methodology provides improved accuracy and optimal fault detection with minimal time overhead, making it an effective solution for fault diagnosis and repair in radiation-hardened memory systems. future work can explore integrating hybrid meta-heuristic algorithms and adaptive threshold mechanisms to enhance fault detection accuracy and convergence speed. additionally, expanding the model for iot-based real-time fault monitoring and energyefficient optimization in embedded systems is recommended. 162 v. mathur, s. k. singh, a. k. s. pundir references [1] a. a. sadawi, m. s. hassan and m. ndiaye, "a survey on the integration of blockchainwith iot to enhance performance and eliminate challenges", ieee access, vol. 9, pp. 54478-54497, 2021. [2] s. lee, h. choi, t. kim, h. -s. park and j. k. choi, "a novel energy-conscious access point (eap) system with cross-layer design in wi-fi networks for reliable iot services", ieee access, vol. 10, pp. 6122861248, 2022. [3] a. k. shukla, s. dhull, a. nisar, s. soni, n. bindal and b. k. kaushik, "novel radiation hardened sotmram read circuit for multi-node upset tolerance", ieee open j. nanotechnol., vol. 3, pp. 78-84, 2022. [4] m. j. marinella, "radiation effects in advanced and emerging nonvolatile memories", ieee trans. nucl. sci., vol. 68, no. 5, pp. 546-572, 2021. [5] t. li et al., "investigation on transient ionizing radiation effects in a 4-mb sram with dual supply voltages", ieee trans. nucl. sci., vol. 69, no. 3, pp. 340-348, 2022. [6] g. z. liu et al., "reliable and radiation-hardened push-pull pflash cell for reconfigured fpgas", ieee trans. device mater. reliab., vol. 21, no. 1, pp. 87-95, 2021. [7] a. a. keshavarz, t. a. fischer, w. r. dawes and c. f. hawkins, "computer simulation of ionizing radiation burnout in power mosfets", ieee trans. nucl. sci., vol. 35, no. 6, pp. 1422-1427, 1998. [8] j. e. schroeder, a. ochoa and p. v. dressendorfer, "latch-up elimination in bulk cmos lsi circuits", ieee trans. nucl. sci., vol. 27, no. 6, pp. 1735-1738, 1980. [9] n. f. haddad, r. d. brown, s. doyle and s. j. wright, "radiation hardened memories for space applications", in proceedings of the 2001 ieee aerospace conference proceedings, big sky, mt, usa, 2001, pp. 2281-2288. [10] j. m. benedetto, p. h. eaton, d. g. mavis, m. gadlage and t. turflinger, "digital single event transient trends with technology node scaling", ieee trans. nucl. sci., vol. 53, no. 6, pp. 3462-3465, 2006. [11] e. xu, y. li, l. peng, m. yang and y. liu, "an unknown fault identification method based on pso-svdd in the iot environment", alexandria eng. j., vol. 60, no. 4, pp. 4047-4056, 2021. [12] b. tran, b. xue and m. zhang, "a new representation in pso for discretization-based feature selection", ieee trans. cybern., vol. 48, no. 6, pp. 1733-1746, 2018. [13] m.-c. chen, c.-c. hsu, b. malhotra and m. kumar tiwari, "an efficient ica-dw-svdd fault detection and diagnosis method for non-gaussian processes", int. j. prod. res., vol. 54, no. 17, pp. 5208-5218, 2016. [14] j. l. fernandez-martinez and e. garcia-gonzalo, "stochastic stability analysis of the linear continuous and discrete pso models", ieee trans. evol. comput., vol. 15, no. 3, pp. 405-423, june 2011. [15] h. y. teh, k. i. -k. wang and a. w. kempa-liehr, "expect the unexpected: unsupervised feature selection for automated sensor anomaly detection," ieee sensors j., vol. 21, no. 16, pp. 18033-18046, 2021. [16] v. mathur, a. k. pundir, r. k. gupta and s. k. singh, "recrudesce: iot-based embedded memories algorithms and self-healing mechanism", in proceedings of congress on control, robotics, and mechatronics (crm 2023), vol 364. springer, singapore, 2024. [17] v. mathur, a. k. pundir, s. singh, s. k. singh, "an insight into algorithms and self repair mechanism for embedded memories testing", in proceedings of the flexible electronics for electric vehicles (flexev 2022) in lecture notes in electrical engineering, vol 1065, p. 48, springer, singapore, 2024. [18] g. noarov, r. ramalingam, a. roth, and s. xie, "high-dimensional unbiased prediction for sequential decision making," presented at the optimization for machine learning conference (opt 2023), 2023. [19] e. gyamfi and a. d. jurcut, "novel online network intrusion detection system for industrial iot based on oisvdd and as-elm," ieee internet of things j., vol. 10, no. 5, pp. 3827-3839, 2023. [20] d. zhang, w. xiang and q. cao, "application of incremental support vector regression based on optimal training subset and improved particle swarm optimization algorithm in real-time sensor fault diagnosis", vol. 51, pp. 3323-3338, 2021. [21] d. wenliao, g. zhiqiang, w. liangwen, l. ansheng and w. zhiyang, "intelligent fault diagnosis of plunger pump in truck crane based on a hybrid fault diagnosis scheme", in proceeding of the 11th world congress on intelligent control and automation, shenyang, china, 2014, pp. 5361-5365. [22] r. singh and b. bhushan, "data-driven technique-based fault-tolerant control for pitch and yaw motion in unmanned helicopters", ieee trans. instrum. meas., vol. 70, pp. 1-11, 2021. [23] a. amar, v. t. alaparthy and s. d. morgera, "a machine learning based intrusion detection system for mobile internet of things", sensors, vol. 20, no. 2, pp. 461-465, 2020. [24] v. mathur, s. singh and a. pundir, "an investigation of augment march c algorithm using iot: heuristic approach", comput. technol., vol. 29, no. 4, pp. 110-121, 2024. [25] a. bin queyam, r. kumar meena, s. kumar pahuja and d. singh, "an iot based multi-parameter data acquisition system for efficient bio-telemonitoring of pregnant women at home", in proceedings of the 2018 8th international conference on cloud computing, data science and engineering (confluence), noida, india, 2018, pp. 14-15. [26] m. j. marinella, "radiation effects in advanced and emerging nonvolatile memories", ieee trans. nucl. sci., vol. 68, no. 5, pp. 546-572, 2021. facta universitatis series: electronics and energetics vol. 33, no 3, september 2020, pp. 489-498 https://doi.org/10.2298/fuee2003489d © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd design of efficient delay block for low frequency application sandeep k. dash, satya n. mishra, nirmal k. rout school of electronics engineering, kiit deemed to be university, bhubaneswar, odisha, india abstract. in recent years researchers have been focusing on the design of low power and small size oscillator for emerging areas of interest such as the internet of things (iot) and biomedical applications. in this paper a new delay block for ring oscillator is proposed using cmos inverter cascaded with inverted current starved inverter (cicsi). the designed delay block provides approximately 50% more delay with a smaller number of transistors than the conventionally designed circuits. furthermore, a ring oscillator and a non-overlapping clock (noc) generator are designed using it. the designed circuits can be used in switched capacitor (sc) circuits, analog mixed signal circuits to meet the need for low frequency portable biomedical applications. the designed circuits are simulated on generic 90nm 1.2v process design kit (gpdk90) using cadence virtuoso design environment. the simulation result shows the delay of the cicsi delay block is 592ps. the ring oscillator using 101 stages of delay block is designed and it is shown that it operates at a frequency of 17mhz with a power consumption of 420µw. key words: cmos inverter, inverted current starved inverter, noc 1. introduction in modern cmos vlsi design, the researchers focus on switched capacitor (sc) technique to implement the design due to its enormous advantages like less power, smaller area, higher precision, and easy implementation on chip [1-3]. the optimal realization of sc circuits depends upon the efficient designing of a non-overlapping clock (noc) generator. the traditional noc consists of a ring oscillator, nor gate, and cascaded delay blocks. there are several methods reported for the generation of delay block, which is further used to design the ring oscillator and noc [4-14]. for low frequency applications, the delay bock should provide more delay. the most efficient and easiest way to design the delay block is using cmos inverter and current starve inverter [15-16]. different techniques are reported to increase the delay of the delay block by implementing a voltage scaling technique [6], transmission gate method [7], and inverted inverter [17, 18].  received february 20, 2020; received in revised form may 26, 2020 corresponding author: sandeep k. dash school of electronics engineering, kiit deemed to be university, bhubaneswar, odisha, india e-mail: sandeepfet@kiit.ac.in 490 s. k. dash, s. n. mishra, n. k. rout cascaded inverter with an inverted inverter is used to get more delay compared to conventional delay blocks reported by a.k. mal et all [17]. the drawback of the delay block is that two or more inverted inverters cannot be cascaded due to logic level restoration problem [6, 17]. so, to improve the delay without having logic level restoration problem inverted current starved inverter (icsi) is used in place of an inverted inverter. the proposed cascaded inverter with inverted current starved inverter (cicsi) delay block consists of a cmos inverter cascaded with an icsi for a single delay block. the cicsi delay block has more delay mainly due to three reasons. first, the output voltage swing of the cicsi is not rail to rail. second, the transistors of icsi are not allowed to turn off during the transition of the input signal, so delay due to switching increases. third, the current flowing through the cicsi is smaller compared to previously reported work [17]. the cicsi circuit produces higher delay with a fewer number of transistors, so that it can be used in low power and low frequency applications. this paper is organized as follows: in section 2, the delay block, ring oscillator, and noc are discussed. section 3 gives a detailed analysis of the delay calculation of the delay block. section 4 presents the results and analysis, finally, section 5 draws the conclusions of the work. 2 cicsi structure the previously reported delay block using an inverted inverter circuit has more delay but it shows a two-stage problem [17]. to improve the delay further, a cmos inverter cascaded with inverted current starved inverter (cicsi) delay block as shown in fig.1 is proposed in this paper. the inverted current starved inverter is designed by swapping pmos with nmos, and nmos with pmos, and shorting the gate terminal of all nmos and pmos transistors. the cicsi has two stages. the first stage is normal cmos inverter and the second stage is a modified current starved inverter which acts as a cascaded pass transistor [1]. in the second stage, the drain terminal of nmos (m3) as shown in fig.1 is connected to vdd, and the source is connected to the drain terminal of nmos (m4). a logic „1‟ input activates the gate of both m3 and m4. the drain of pmos (m6) is grounded and source is connected to drain of pmos (m5). a logic „0‟ input activates the gate of both m5 and m6. by applying the concepts of cascaded pass transistor logic [19], when the second stage of cicsi is given logic „1‟, then the m4 pass gate is turned on and the output will be ≈ vdd−vtn. similarly, when a logic „0‟is applied to the second stage then m5 is turned on the output will be ≈ |vtp|, where vtn and |vtp| are the threshold voltage of the m4 and m5 transistors respectively. for gpdk 90 nm process, with vdd = 1.2 v, and vtn0 and −vtp0 are approximately 0.15v. the output voltage of the cicsi is from 0.15 v to 1.05 v. fig. 1 cicsi delay block of noc design of efficient delay block for low frequency application 491 the output voltage swing of the inverted current starved inverter is smaller by one threshold voltage on both sides as per the principle of cascaded pass transistor logic. so, the combination of cmos inverter followed by inverted current starved inverter's output signal swing is not rail to rail. when this output is fed to the next stage inverter, the output is not affected much due to the fact that the basic cmos inverter provides an excellent gain in between voltage levels vil and vih [19]. the output voltage swing of the next cmos inverter is not affected as the input to the cmos inverter is either less than vil or more than vih. the delay of the inverter circuit is inversely proportional to the current flowing through it [19]. in the proposed cicsi block, smaller amounts of current flow as compared to the conventional circuit. ring oscillators are realized by cascading an odd number of inverters [4, 17-19]. the ring oscillator using the cicsi block is shown in fig.2. the frequency of oscillation for a ring oscillator is given by 1 2 osc p f n   (1) where „n‟ is the number of inverter stages and „τp‟ is the average propagation delay of a single cicsi delay block. as the frequency of oscillation depends on the delay introduced by each inverter stage, so for low frequency applications the total delay must be large at the output. fig. 2 ring oscillator using cicsi delay block the block diagram of the basic non overlapping clock (noc) generator is shown in fig. 3. an even number of delay blocks is connected in series in noc generator [1]. the different non overlapping clock period can be obtained by suitably choosing number of cascaded delay blocks. the total non-overlapping clock period is given by n × τp, where „n‟ represents the number of cicsi delay block and „τp‟ represents the average propagation delay of single cicsi delay block. the noc output does not have a rail to rail swing, so two cmos inverters are connected in series (as buffers) at the end of the delay block to make the output signal swing rail to rail. 492 s. k. dash, s. n. mishra, n. k. rout fig. 3 noc block fig. 4 shows the voltage transfer characteristic (vtc) of the cmos inverter, inverted inverter [17], and the proposed inverter (cicsi). in the figure cmos inverter shows rail to rail swing (0 1.2 v) but inverted inverter does not show rail to rail output. the vtc of the cicsi though not having rail to rail swing does not degrade from the inverted inverter. from the vtc of the cmos inverter it is found that the transition region extends from 0.328 v to 0.6 v. so the input below 0.328v and above 0.6v is considered as perfect logic „0‟ and logic „1‟ respectively. for gpdk 90nm process vtn = -vtp = 0.15 v, the output swing of the cicsi is between 0.15 v to 1.05v (approximately) and it is recovered by the next stage cmos inverter. in these three designs minimum transistor sizing ratio (w/l=120nm/100nm) with a voltage supply of 1.2v are used. fig. 4 vtc curve 3. delay estimation in this section the delay of the cicsi delay block consisting of a cmos inverter and icsi is calculated. the delay of the cascaded block is calculated one by one and then combined to get the final delay. then the frequency of a ring oscillator which is designed using an odd number of such delay blocks is estimated. the delay of cmos inverter is calculated in two steps. when the output of cmos inverter changes from logic „1‟ state to logic „0‟ state, the delay is defined as propagation delay (high to low) which is denoted by τphl. similarly, when the output of cmos inverter changes from logic „0‟ state to logic „1‟ state, the delay is defined as propagation delay design of efficient delay block for low frequency application 493 (low to high) which is denoted by τplh. combining both the delays, the total propagation delay [17] (high to low) is expressed as 4 ln ( 2 ) 2 3 4 load tn dd phl n dd tn dd tn dd tn c v v k v v v v v v         (2) similarly, the propagation delay [17] (low to high) is estimated as 4 ln ( 2 ) 2 3 4 tpload dd plh p dd tp dd tp dd tp vc v k v v v v v v            (3) the next objective is to model the delay of icsi in terms of the mos process parameters. the behaviour of the icsi circuit is the same as the cascaded pass transistor [19]. when the input of the the icsi is high (vdd), the nmos transistor is on and acts as a cascaded pass transistor to transfer the logic input to the output. thus, during logic 1 transfer the charging of the capacitor is done through nmos transistor. to simplify our analysis, we neglect the substrate bias effect at this point. thus, when input changes from 0 to vdd then transistors m3 and m4 are on state and in saturation mode up to output voltage ηvdd where η is 0 < η < 0.5 and m3 in saturation and m4 in linear for output voltage ηvdd to 0.5vdd. 1 2 2 ( ) 2 1 1 (1) dd tp v load i lh n v dd tn load n dd tn dd tp tn c dv k v v v c k v v v v v            (4) 0.5 2 2 2 2( )( ) ( ) ( 2 ) = ln ( 4 )( ) dd dd v load i lh n v dd tn dd dd load dd dd dd tn n tn dd tn dd dd c dv k v v v v v v v c v v v v k v v v v v             (5) here, v represents the output voltage of icsi delay block, τi1lh is the time required to charge the load capacitor from vtp to ηvdd and τi2lh is the time required to charge the load capacitor from ηvdd to 0.5vdd. so total time (τilh) required to charge load capacitor from vtp to 0.5vdd is calculated as follows 1 2 ilh i lh i lh     (6) in similar ways, during logic 0, transfer high to low delay (τihl) is calculated as 1 2 ihl i hl i hl     (7) the total delay of the cicsi delay block τlh(tot) [or τhl(tot)] is the sum of the delay of cmos inverter τplh [or τphl] and delay of icsi τilh [or τihl]. it is expressed as ( ) ( ) lh plh ilh hl phl ihl tot tot           (8) 494 s. k. dash, s. n. mishra, n. k. rout 4. result and discussion this section presents the simulated results that were carried out in cadence using cmos 90nm (gpdk 90nm) process of delay block and noc, and its characterization for the proper functioning. in all the designs transistor sizing ratios (w/l=120nm/100nm) are used with a voltage supply of 1.2v. fig. 5 shows the plot of input and output voltage of cicsi. when the input is fed to the cicsi then the first stage gives the inverted output which is rail to rail. the output of the first stage is applied as input to the second stage (inverted current starved inverter). the output of the second stage is not rail to rail. the vil and vih of the cicsi are 0.32v and 0.6v which is shown in fig. 4. the output of the second stage inverted current starved inverter is less than 0.32 v and more than 0.6v. when this output is applied to the next stage of the cicsi, it is considered as perfect logic 0 and logic 1. fig. 5 input and output voltage level of cicsi delay block fig. 6 shows the plot of the ring oscillator output with and without buffer. the ring oscillator output shows the output ranges from 0.25v to 1.05v which is not rail to rail. when the buffer is added at the output then the signal level is restored from 0 to 1.2v, as shown in fig. 6. fig. 6 ring oscillator output with and without buffer design of efficient delay block for low frequency application 495 fig. 7 shows the plot of transistor count versus the frequency variation for inverted inverter and cicsi. the graph shows for same number of transistors, cicsi produced less frequency compared to the inverted inverter. the variation shows the slope of cicsi is smaller compared to the inverted inverter. this shows that the proposed cicsi design has less variation in frequency (307mhz-68mhz) for the same number of transistors as compared to the inverted inverter (737mhz-145.9mhz). fig. 7 number of transistors vs frequency fig. 8 shows the plot temperature versus frequency of the cicsi. the cicsi shows the duty cycle is 50% for almost all ranges of temperature. the cicsi has tested from -40°c to 100°c, which shows minimal change (9.85mhz to 21.82mhz) in the frequency compared with the other oscillator in table 1. fig. 8 frequency vs temperature fig. 9 shows the output of the noc block. the cicsi gives more delay compared to other delay circuits like inverted inverter [17]. the increased delay is helpful in saving number of transistors. in this work 2.59ns non overlapping clock period is achieved using 48 transistors in the delay chain. 496 s. k. dash, s. n. mishra, n. k. rout fig. 9 noc delay fig. 10 shows the variation of the number stages of the oscillator with the frequency of oscillation obtained from simulation and analytical model. based on fig.10, the delay is calculated and the frequency is obtained. table 2 shows the comparison between an oscillator using cicsi block and the existing oscillator which shows the improved performance like reduced number of stages so that the power is reduced by nearly 50%. in table 3 there is the comparison for different processes showing frequency of the oscillations for different oscillators. table 4 shows that using a smaller number of transistors, a higher noc period can be obtained with a cicsi block. the noc and oscillators are an integral part of switch capacitor circuits used in the filter, eeg and ecg applications [20, 21] fig. 10 analytical & simulated delay design of efficient delay block for low frequency application 497 table 1 comparison of frequencies of different oscillators for different temperatures temperature (°c) frequency of cicsi ring oscillator (mhz) frequency of 1cmos inverter and 1inverted cmos inverter (mhz) -40 9.85 13.26 -20 12.22 14.82 0 14.44 15.98 20 16.45 16.97 27 17.08 17.15 40 18.20 17.92 60 19.69 18.24 80 20.87 18.64 100 21.82 18.88 table 2 the important parameters of different oscillator blocks cicsi oscillator 1 cmos inverter and 1 inverted cmos inverter frequency 17.08 mhz 17.15 mhz no. of stages 101 313 transistor count 610 1256 power 419.2µw 822.94 µw table 3 the comparison of the frequency of different oscillators for different processes process frequency of cicsi ring oscillator (mhz) frequency of 1 cmos inverter and 1 inverted cmos inverter (mhz) fs 4.59 5.63 ss 12.05 11.92 nn 17.08 17.15 ff 20.85 21.77 sf 31.56 26.81 table 4 the comparison of noc period of different delay blocks no. of transistors tnoc of cicsi block (ns) tnoc of 1cmos inverter and 1inverted cmos inverter (ns) 24 1.41 0.69 48 2.59 1.23 72 3.74 1.79 96 4.91 2.35 120 6.05 2.91 5. conclusion this paper presents a delay block which generates a higher delay with an equal number of mos transistors as reported earlier. the delay expression for the proposed cicsi circuit is formulated. the delay block is used in a ring oscillator circuit and simulation results show its power and area efficiencies. finally, a two phase non overlapping clock is generated using noc generator which shows improvement in terms of area. 498 s. k. dash, s. n. mishra, n. k. rout acknowledgement: the authors would like to acknowledge the school of electronics engineering, kiit deemed to be university, bhubaneswar, for providing all the facilities for carrying out the work. references [1] p. e. allen, e. sanchez-sinencio, switched capacitor circuits, van nostrand rienhold, 1984. [2] roubik gregorian, gabor c. temes, analog mos & integrated circuits for signal processing, john wileysons, 1986. [3] david a. johns, ken martin, analog integrated circuit design, john wiley & sons, 1997. [4] b. razavi, “the ring oscillator [a circuit for all seasons]”, in ieee solid-state circuits magazine, vol. 11, no. 4, pp. 10-81, fall 2019. [5] g. jovanovic, m. stojcev, “a method for improvement stability of a cmos voltage controlled ring oscillators”, in proceedings of the icest2007, ohrid, june 2007, vol. 2, pp. 715–718. [6] r. s. s. m. r. krishna, g. l. madhumati and a. k. mal, “design of substantial delay block using voltage scaled cmos inverter and transmission gate blend”, in proceedings of the 2016 international conference on microelectronics, computing and communications (microcom), durgapur, 2016, pp. 1–6, [7] meng-liehsheu, ta-wei lin, wei-hung hsu, “wide frequency range voltage controlled ring oscillator based on transmission gates”, iscas 2005, vol. 3, pp. 2731–2734, may 2005. [8] t.jiang,j.yin,p.mak and r.p.c.martins, “a 0.5-v 0.4-to-1.6-ghz 8-phase bootstrap ring-vco using inherent non-overlapping clocks achieving a 162.2-dbc/hz fom”, ieee transactions on circuits and systems ii: express briefs, vol. 66, no. 2, pp. 157-161, feb. 2019. [9] f. pepe and p. andreani, “an accurate analysis of phase noise in cmos ring oscillators”, ieee transactions on circuits and systems ii: express briefs, vol. 66, no. 8, pp. 1292–1296, aug. 2019. [10] b.j. v. t. ferreira and c. galup-montoro, “ultra-low-voltage cmos ring oscillators”, electronics letters, vol. 55, no. 9, pp. 523–525, 2 5 2019. [11] b. s. salem, h. zandevakili, a. mahani and m. saneei, “fault-tolerant delay cell for ring oscillator application in 65 nm cmos technology”, iet circuits, devices & systems, vol. 12, no. 3, pp. 233–241, 2018. [12] b.x. yu, y. fang and z. shi, “2.5 mw 2.73 ghz non-overlapping multi-phase clock generator with duty-cycle correction in 0.13 µm cmos”, electronics letters, vol. 52, no. 14, pp. 1261–1262, 2016. [13] p. angelov, m. nielsen-lönn and a. alvandpour, “ring-oscillator-based timing generator for ultralow-power applications”, in proceedings of the 2017 ieee nordic circuits and systems conference (norcas): norchip and international symposium of system-on-chip (soc), linkoping, pp. 1–4, 2017. [14] b.nowacki, n. paulino and j. goes, “a simple 1 ghz non-overlapping two-phase clock generators for sc circuits”, in proceedings of the 20th international conference mixed design of integrated circuits and systems mixdes 2013, gdynia, pp. 174–178. [15] b.l. minatiet al., “current-starved cross-coupled cmos inverter rings as versatile generators of chaotic and neural-like dynamics over multiple frequency decades”, ieee access, vol. 7, pp. 54638– 54657, 2019. [16] b.c. q. liu, y. cao and c. h. chang, “acro-puf: a low-power, reliable and aging-resilient current starved inverter-based ring oscillator physical unclonable function”, ieee transactions on circuits and systems i: regular papers, vol. 64, no. 12, pp. 3138–3149, dec. 2017. [17] a.k. mal, r. thodani,”non overlapping clock (noc) generator for low frequency switched capacitor circuits”, in proceedings of the students technology symposium 2011 ieee, pp. 226–231. [18] a. k. mal and r. todani, “non overlapping clock generator for switched capacitor circuits in bio-medical applications”, in proceedings of the 2011 international conference on signal processing, communication, computing and networking technologies, thuckafay, 2011, pp. 238–243. [19] s.m. kang, y. lebebici, cmos digital integrated circuits,analysis and design, mcgraw-hili publishing company limited, 2003. [20] n. n. singh and p. p. bansod, “switched-capacitor filter design for ecg application using 180nm cmos technology”, in proceedings of the 2017 international conference on recent innovations in signal processing and embedded systems (rise), bhopal, 2017, pp. 439–443. [21] a. karimi-bidhendi et al., “cmos ultralow power brain signal acquisition front-ends: design and human testing” ieee transactions on biomedical circuits and systems, vol. 11, no. 5, pp. 1111–1122, 2017. 12547 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 29 52 https://doi.org/10.2298/fuee2401029s © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper methodology of creating nft fashion projects milica simić, katarina šikman, marija vrljanac, vukašin despotović, marijana despotović-zrakić university of belgrade, faculty of organizational sciences, department for e-business, belgrade, serbia orcid ids: milica simić https://orcid.org/0000-0002-6870-2303 katarina šikman https://orcid.org/0009-0002-4210-4046 marija vrljanac https://orcid.org/0009-0004-2904-2789 vukašin despotović https://orcid.org/0000-0002-6966-0942 marijana despotović-zrakić. https://orcid.org/0000-0002-6458-1575 abstract. there is a lot of misunderstanding about what non-fungible tokens represent. they are usually associated with some kind of ownership or certification, but it is much more than that. this document aims to inform the readers about different use cases of nft in the real and virtual world, with applications in the fashion industry. the paper aims to propose a methodology for creating nft fashion projects. according to the proposed methodology, modelling of the ecosystem for the fashion industry based on nft is presented. an example of creating an nft collection, minting and realizing a transaction using a smart contract was also developed. the pyteal programming language was used to develop the smart contract, and the algorand platform and market were used to display transactions and minting. key words: digital fashion, metaverse, nft, algorand, smart contracts 1. introduction fashion designers aim to create visually appealing clothing through creative manipulation of design elements in accordance with design principles [1]. as fashion faces an increasingly complex and digitized work environment, digital technologies are taking on a key role in fashion design. the application of digital technologies allows fashion designers to explore and experiment in an unlimited way. allowing them to collect ideas, inspiration and knowledge from different sources and then implement them in their creative processes. digital technologies enable virtual modelling, simulation of materials, colours, movement of clothing items in real-time, and the like, aiming to easily and quickly prototype and test ideas [2]. based on this, digital fashion can be defined as the visual display of clothing using computer technologies and 3d software. compared to the traditional fashion industry, digital received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: milica simić university of belgrade, faculty of organizational sciences, jove ilića 154, belgrade, serbia e-mail: milica.simic@elab.fon.bg.ac.rs https://orcid.org/0000-0002-6870-2303 https://orcid.org/0009-0002-4210-4046 https://orcid.org/0009-0004-2904-2789 https://orcid.org/0000-0002-6966-0942 https://orcid.org/0000-0002-6458-1575 mailto:milica.simic@elab.fon.bg.ac.rs 30 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić fashion has many advantages, such as environmental sustainability, lower costs, unlimited creativity and no production limitations. fashion brands are slowly introducing modern information technologies into their business, and the most noticeable is their interest in non-fungible tokens. nfts are still a very new topic in today's world. given the historical facts that the first ever nft called “quantum” was coined in 2014 by kevin mccoy and sold only in 2021, it is clear that the use of this technology is still a blue ocean. one kind of cryptocurrency [3] that is derived from ethereum smart contracts [4] is called non-fungible token (nft). because nft is distinct and cannot be replaced (equivalent, irreplaceable), it can be used to uniquely identify objects or people. more specifically, the author can simply demonstrate the existence and ownership of digital goods like as photographs, movies, event tickets, and art [5, 6], by utilizing nfts on smart contracts (in ethereum [4]). every time a trade is completed successfully on any nft market or peer-to-peer exchange, the developer can also profit. non-fungible tokens (nfts) provide a new form of monetization for fashion brands and ownership of digital assets, enabling fashion brands to keep ownership and control over their property without worrying about theft or piracy. since non-fungible tokens create a new experience as well as an innovative digital marketplace, the creation of fashion nfts allows fashion companies to offer new products to their consumers. they use nft as a marketing tool to acquire new customers and establish a presence in the web3 space, i.e. the metaverse. the structure of the paper first includes the concepts of non-falsifiable tokens, i.e. a closer insight into the general use of nfts, what they represent and their connection with the metaverse, what are the elements of nfts, as well as their application and benefits they bring to fashion and fashion design. then the methodology of creating nft projects is presented, and the steps that must be taken during the creation itself are included. then a study example of the application of the methodology of creating nft projects was presented. 2. literature review 2.1. non-fungible tokens non-fungible tokens have unique properties that can make them different from each other, non-fungible units of data stored in a digital ledger in the form of blocks. their presence on the blockchain is public proof of ownership. non-fungible tokens cannot be traded on an equivalent scale, unlike fungible tokens. as they are based on the blockchain, nonfungible tokens remove middlemen in transactions, simplifying them and creating new markets [7]. non-fungible tokens can be represented in two views, as digital or physical assets. as digital assets that are used most often and most today, they can be art, tickets to events, virtual properties, items in games and the like, while from a physical aspect, assets can be ownership contracts, licenses, but also houses, cars and the like. often, non-fungible tokens can be presented as abstract assets, which can be identity or knowledge [8]. every nft project includes details on the digital asset's owner, who minted it or sold it, to whom and in what time frame. in every trade with non-fungible tokens, there is a protocol that is defined and followed. buying and selling are done using the cryptocurrency ethereum, and each transaction is recorded within a block on the blockchain. methodology of creating nft fashion projects 31 fig. 1 nft protocol, adapted from [9] according to figure 1, each nft protocol consists of participants who have two roles, nft owner and nft buyer. and the steps of the nft owner protocol are [9]: ▪ nft creation – the nft owner creates the file and then confirms that the description, title, and file are accurate. following the verification, the owner attests to the legitimacy of the ownership and the raw data is digitalized into the proper format; ▪ nft store – the nft owner keeps raw data off the blockchain in an external database. additionally, the owner can keep the unprocessed data on the blockchain; ▪ nft token – the smart contract is created and signed by the nft owner; ▪ nft mint and trade – the trading process starts when the smart contract is generated using the transaction and nft data; ▪ nft confirmation – the trading process is finished once the transaction is verified. it suggests that the nft has a distinct address, is verified to exist, and is kept on the blockchain. on the other hand, the steps of the nft buyer protocol are similar, but the actions are different [9]: ▪ template creation – the owner of the nft initiates the template through a smart contract in order to define the basic characteristics; ▪ nft offer – the buyer of nft offers an offer for nft; ▪ nft mint and trade – once the offer is accepted, the trading process begins, and a smart contract is initiated with all the features; ▪ nft confirmation – after validation of authenticity, the buyer buys the nft and becomes the owner of the nft. each block within the blockchain chain has a limited capacity, with each subsequent transaction of the same nft project, data will not be stored within that block, but a new block is created that is linked to the address of the original block in the chain. each transaction stores metadata and ownership details, thus achieving authenticity of ownership, and the history of the nft is immutable [9]. 32 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić non-fungible tokens can be divided into two groups: ▪ non-fungible tokens that are based on the real physical world tickets to events, works of art, etc; ▪ non-fungible tokens that are based on the metaverse – digital assets that have no relative connection to actual physical assets or events. it is known that non-fungible tokens have wider application possibilities and are not only for art, the very principles behind nfts can revolutionize the concepts of ownership of all types of assets in the metaverse. so, for example, digital art, digital real estate or digital clothing may contain proof of ownership. indeed, proof of ownership can play a key role in the metaverse, a place where it would otherwise be very difficult to prove that an owner has ownership of any asset [10]. but before that, it is necessary to first define the metaverse and what benefits it contributes to the fashion industry. the metaverse can be defined as a simulated digital environment using modern technologies, virtual reality, augmented reality and blockchain technology, whose primary task is to imitate the real world, to gather people for socializing, playing, working and the like. as the metaverse is an extension of the physical world, it is logical to feel the need to own virtual clothes, especially those that can be worn [11]. non-fungible tokens that are based on the metaverse and provide some value to traditional non-fungible tokens but also represent a combination of scarcity, aesthetics and utility. every metaverse user will need clothes for their 3d avatar [12]. since nfts do not degrade or wear out, their authenticity can be easily verified, thus ensuring greater investment value in rare luxury fashion brands and their fashion nfts, which have a unique value for their owners. the market for non-fungible tokens that yield wearable fashion clothing in the metaverse is still small but has attracted the attention of luxury fashion brands. the most important benefit that the metaverse provides to fashion brands is to overcome the boundaries of the physical world, providing their customers with a new experience of digital shopping, as well as digital clothing. in this way, fashion brands work to create brand awareness on a global level and achieve greater customer loyalty by providing them with something new and innovative. however, the most significant benefit that users derive from the metaverse is the opportunity to shop for clothing from “their armchairs”; they may utilize their avatars to visit various stores and try on various outfits before deciding which ones to buy. 2.2. elements of non-fungible tokens nft (nonfungible token) is a token that cannot be exchanged (meaning irreplaceable) for something else. nft represents the ability to place an intelligent barcode on an asset. the owner of the nft owns the intelligent barcode. property is something useful or valuable, the ownership of which can be transferred to another person or entity through space and time. assets can be physical (e.g. art, house, contract), digital (e.g. software, image, music) or abstract knowledge, identity. almost every nft has a utility. utility is the physical value gained from owning a particular nft. the most important thing is the connection between the token that is represented by something (e.g. a picture) and the asset behind it. tokenization is the process of linking a token to an asset on blockchain technology. the tokenization process represents a promising solution for converting property rights into a unique digital representation a token [13]. the act of creating digital tokens on a distributed ledger or methodology of creating nft fashion projects 33 blockchain that represent either digital or real assets is known as asset tokenization. blockchain ensures that if you purchase tokens representing an asset, your ownership of that asset is entirely immutable and cannot be erased or changed by any authority. tokenization of a digital asset is a process in which ownership rights to an asset are represented as digital tokens and stored on the blockchain [14]. accordingly, an nft is a bunch of data stored on the blockchain under a specific address. elements of nft: ▪ smart contract – a bunch of data represented through code (a set of commands) that defines the use cases of nfts (creation, transactions, communication with external ecosystems). contains a link to the asset, but not the asset itself. to make that pile of data more valuable, it needs to be linked to a specific asset. (erc-721) ▪ metadata – represent the link between the token and the asset. it is usually saved as an xml or json connection specification file. ▪ asset representation – usually a .jpg file. it is important to point out that the whole philosophy lies in the way the technology is applied, not in the presentation itself. ▪ assets – intellectual property rights, for example. as mentioned earlier, the types of assets are: physical, digital and abstract. of all the elements mentioned above, only the smart contract must be on-chain (on the blockchain), the other elements can be both on-chain and off-chain. smart contracts follow specific standards that are always present in the blockchain ecosystem. a smart contract works as a decentralized organization – it can run on multiple devices at the same time, but it cannot be changed or stopped once it is running. the programming language solidity, which is very similar to javascript, is typically used to write the code inside ethereum smart contracts. 2.3. application of nft in fashion design non-fungible tokens provide a new form of monetization for fashion brands and ownership of digital assets, allowing fashion brands to retain control and ownership of their assets without fear of copying or theft. therefore, more and more fashion brands are incorporating blockchain and nft into their business strategies. as non-fungible tokens create a new experience, as well as an innovative digital market, fashion brands are using it to offer their consumers a new higher level of communication, creating better collaboration, and greater customer loyalty. also, by incorporating modern technologies, fashion brands are slowly turning towards gaining new customers from generation z and millennials [15]. unlike physical products, non-fungible tokens can be sold multiple times while maintaining the same quality. among other things, the creators of the nft itself can decide to offer their customers a unique value in addition to the nft itself and thus make the whole experience better. based on this, fashion brands can connect virtual fashion with physical, and make the transformation into the metaverse easier. for example, the fashion brand “chanel” can give its nft customers access to a limited-edition physical collection. by doing so, the collection becomes much more attractive to consumers, and the fashion brand explores and reaps new revenue streams and remains an acceptable fashion brand for future generations [16]. traditional fashion brands and non-fungible tokens have one thing in common, that is exclusivity. as the basic definition of nft is irreplaceability, it makes it very similar to, for example, a fashion piece from one of the “haute couture” shows, which is one of the reasons why it can fetch a high price. the nft market is all about scarcity, and scarcity itself is what 34 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić drives the fashion industry. the less there is of an article of clothing, the greater the demand, and thus the price of the given article rises. this is exactly the model that the nft market follows. for example, the well-known bag of the fashion brand “hermes”, “birkin” can be compared to the best-selling nft, precisely because they are highly valued in society and it is a real luxury to have them, and they are very difficult to obtain [16]. the french luxury fashion house “givenchy” entered the world of non-fungible tokens in an original way. in collaboration with the artist chito, they created 15 nft tokens, which they presented on the “opensea” market. the purpose of non-fungible tokens is reflected as an online avatar or profile picture. also, the sale was made in the traditional way, the auction lasted seven days. the givenchy fashion house donated all proceeds from the sale to a non-profit organization dealing with the elimination of plastic pollution [15]. unlike the fashion house “givenchy”, the fashion brand “burberry” dared to experiment, combining the world of games and its non-fungible tokens. in collaboration with the game “blankos block party”, “burberry” launched a limited edition nft character from the game called “sharky b”, which is covered with the “burberry” tb monogram [17]. timberland joins the list of forward-thinking fashion brands staking their claim in the virtual world. in cooperation with “unreal engine” and the game “fortnite”, they created shoes from real life and thus connected the physical world with the virtual one. the program “timberland construct: 10061” included a set of four metaboots, including a replica of the most famous and famous yellow boot of the company “timberland”, as well as three original boots that were inspired and adapted to the ecosystem of the game “fortnite” [18]. most fashion brands have successfully implemented the concept of modern technology by introducing non-fungible tokens into their portfolios. the archetypal example is the “metabirkins” nft. “metabirkins” is a collection of non-fungible tokens representing the silhouette of the popular “birkin” bag, decorated with fur coats, cow print, and various motifs and patterns. the nft collection, which was exhibited at “art basel” in miami, was created by artist mason rothschild. as the project itself was not created in collaboration with the fashion brand “hermes”, but independently, the french fashion house filed a lawsuit for trademark infringement and theft. the question arses, of how the fashion house “hermes” will handle its own protection and enter the metaverse and the very world of non-exchangeable tokens [19]. the fact that companies like “gucci”, “tommy hilfiger”, and “dolce & gabbana” invested millions of dollars to create virtual metaverse storefronts in 2021, selling a combination of digital fashion nfts and nfts that could be redeemed for physical goods, shows how important digital fashion has become. 2.4. benefits of nft in fashion and fashion design the benefits of using non-fungible tokens in fashion and fashion design are reflected in the opportunities they provide to fashion designers. as just creating and making a fashion collection is very expensive, fashion designers and even the most talented ones find themselves trapped in the cage of costs required to realize their ideas. digital fashion in the form of non-fungible tokens allows fashion designers to fully express their talent, with little compensation. sustainability. the fashion industry is one of the largest producers of waste, and the implementation of modern technologies would reduce waste. in addition to lower production costs, nfts provide a new economic model and greater financial benefits. fashion brands could benefit from secondary copyrights implemented in a smart contract [20]. among other things, the benefits of using non-fungible tokens in fashion provide the methodology of creating nft fashion projects 35 power to refresh the very image of a fashion brand. consumer demands are changing, and nft provides a chance for fashion designers to create something new, and innovative, but also to expand their collections, on the contrary, in physical form this is not possible to a large extent [16]. since nft is a relatively new innovation, there are also some drawbacks that fashion brands should consider before introducing non-fungible tokens. nft stands in direct contrast to everything fashion stands for, feel and touch. as the use of quality materials in the manufacture of fashion garments is a key factor in the consumer's purchasing choice and trust, non-fungible tokens will hardly succeed in imitating the distinction between nonluxury and luxury brands through quality. fashionable non-deceptive tokens can be bought on a number of different nft markets, which implies that most users are or can be confused when purchasing. although they exist and are not sufficiently adopted, it is necessary to create a fashion market for non-deceptive tokens that will stand out from the rest. countering the uncertainty of use brought about by non-deceptive tokens, as well as addressing potential legal challenges are still under development [16]. “nike” and “dolce&gabbana” are the fashion brands that have generated the most income from the introduction of nft in their portfolios. sports giant nike had their best year in terms of nft sales, earning $185 million in sales alone. then, in second place is the fashion brand “dolce&gabbana”, which managed to earn 25.6 million dollars through nft sales. as “collezione genesi” was one of the biggest events in the history of fashion nft, which included nine pieces of fashion nft and the physical garments themselves, it sold for almost 5.7 million dollars. also, the fashion house “gucci” reaps the benefits of well-implemented modern technology in its business, with sales revenue of 11.56 million dollars [21]. 3. methodology of creating nft projects details on who owns the digital asset, who sold it, and when are all included in the nft project. they are kept on the blockchain and are purchased and traded online with cryptocurrencies. each nft project is a unique token on the blockchain [22]. this original work is limited to one owner and one verifiable version. nft projects can be saved and shared, but nft’s content can only be replicated with access to its password-protected, blockchain-stored unique identification. regardless of location, nft projects are the way of the future for the collectible art market [20]. the necessary steps to be taken are: 1. defining the concepts and strategies defines how nfts solve problems, why people should buy them, what makes them unique, how to generate revenue, the project's vision, risk mitigation, and the distinction between strategy and implementation plans; 2. creation tools and nft platform includes coming up with an attractive concept, using software like “adobe illustrator” or “photoshop” to create the token, and considering blockchain technology, digital wallets, and smart contracts for the market; 3. preparation of works of art and nft collection includes planning the project, developing a smart contract, creating a minting page, designing the artwork, minting the nfts, disclosing the collection, and implementing the roadmap; 4. designing and implementing smart contracts smart contracts are computer protocols that enforce agreements by storing ownership and transaction data for nfts, requiring 36 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić thorough testing before deployment on a blockchain platform, enabling nft availability and facilitating trading and ownership transfer.; 5. property testing testing strategies encompass automated methods, utilizing software for repeated tests and comparing expected outcomes with actual results, as well as manual approaches involving human-assisted steps like code audits to thoroughly examine each line of contract code.; 6. selling on the market involves two stages: the phase before minting, where the nft is prepared, and the phase after minting, where the nft is published on the blockchain and becomes available for buying, selling, and trading. 3.1. defining the concept and strategies when formulating a strategy for nfts, it is essential to address key questions that shape the direction of the project. it begins by identifying the problem that the nfts aim to solve, understanding the unique value proposition that attracts potential buyers. emphasizing what sets the project apart is crucial in a competitive landscape. developing revenue generation plans for both pre-mint and post-mint phases ensures financial sustainability. envisioning the project’s trajectory in the next 2-3 years provides a clear vision and direction. evaluating and minimizing risks helps safeguard the project’s success, promoting stability and growth. demand in the market must exist again and again. it can also affect (limit) the supply process. the key thing is not to confuse strategy and plan, and a plan can be defined as a concrete implementation of a defined strategy. 3.2. tools for creating nft collection creating non-fungible tokens is an extremely simple and easy process, while on the other hand, coming up with the very concept and idea is an exciting process because it is necessary to create nft that will attract digital art enthusiasts. after the concept is designed, the next step involves the creation of the nft. there are various software that can be used during the creation itself, and the most commonly used are “adobe illustrator”, “photoshop”, “nft creator”, “sketchar”, “corel” and similar [23]. in addition to the various software used when creating the non-falsifiable tokens themselves, in the performance market, it is necessary to use and choose blockchain technology, a digital wallet, as well as certain software for the development of smart contracts according to the choice of blockchain technology. 3.3. creating nft collection steps required to create an nft collection: 1. project planning 2. development of a smart contract 3. development of the minting page 4. a work of art 5. mint 6. disclosure 7. implementation of the road map the steps of smart contract development, minting page development and the artwork itself can be parallelized. methodology of creating nft fashion projects 37 3.3.1. project planning the roadmap is a product of the nft project. it represents the idea that will be delivered during the roadmap. nft is an enabler that provides access to the roadmap. therefore, the roadmap is unique, must cover at least one year of the project strategy and be simple (2-3 milestones per year) and realistic (according to the skills of the team members). in this step, a good business plan must be made, which in nft projects is called a white paper. in addition, as already mentioned, marketing strategy is crucial. a good practice here is to define the user persona, engage influencers and stay focused on the content and delivered value, not on the sale itself. the key to success is a good team consisting of artists, someone taking care of the artwork, as in, for example, the translator between the artist and the rest of his team called the art director. then community manager, developer (page forging, smart contract) and “founder”. the best places to find a team are “twitter” and “discord”. 3.3.2. development of a smart contract to create a smart contract, the logic behind its terms is most important. tools needed for smart contract development: 1. algorand development of smart contracts using the pyteal programming language; 2. ide (integrated development environment): ide: remix – a browser-based application used for development, testing and deployment; 3. etherscan.io – used for application and process control, e.g. inflict, reveal, pause, payout, etc. it is used to analyze, publish, interact and access, read and use blockchain smart contracts. 3.3.3. development of the minting page it is a frontend page whose code contains the conditions for defining a smart contract. the most commonly used libraries are web3.js and inter.js. 3.3.4. work of art it is a representation of an nft and the connection between the token and the asset it represents. this is usually an image called a tft (profile picture/avatar), created using. “adobe photoshop” or “adobe illustrator”. 3.3.5. mint minting represents the moment when an nft is published on the blockchain, and from then on it can be bought, sold and traded. the minting process can be seen in figure 2. nft platforms are websites, or crypto exchanges, that offer a one-stop marketplace to mint, list and sell nfts. the most popular are: “opensea”, “solanart”, “cnft”, and “binance nft”. the nft minting process includes opening a crypto wallet and connecting it to the nft marketplace. then, the digital file should be uploaded to the nft marketplace, and a name should be given to the nft, along with providing the royalty payout rate and other parameters. finally, the nft is minted [24]. 38 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić 3.3.6. discovery every nft market has exact instructions on how to set up nft properly, so it is possible to generate a market nft from a digital file. choosing the nft monetization method itself is the last step. some markets allow a stock or fixed price to be listed. but for an nft to be resold on secondary markets, the owner of the non-fungible token must set a minimum price, royalties and the length of the auction. after all these steps, only non-fungible token market trading can begin. 3.4. designing and implementing smart contracts a smart contract is a computer protocol that makes it easier for two or more parties to negotiate or carry out an agreement by facilitating, validating, or enforcing it. important data is stored in it, including ownership rights and nft transaction data. code must be thoroughly tested before being deployed on the blockchain. a smart contract can be implemented on a selected development platform after it has been designed. users will be able to exchange or transfer ownership of tokens and access nfts on the blockchain as a result. 3.5. property testing the following reasons the importance of testing smart contracts. first of all, smart contracts are high-value applications. they are also immutable and can, and frequently do, result in significant, irreversible losses for customers. there are two main types of strategies for testing smart contracts: ▪ automated testing – automated testing tools that may run numerous tests to identify vulnerabilities in smart contracts. additionally, test data can be used to configure automated testing tools so they can compare expected and actual outcomes; ▪ manual testing – manual and requiring the assistance of a person to carry out the testing procedures. one type of manual testing for smart contracts is code audits, in which developers and/or auditors review every line of the contract code. 3.6. selling on the market generally speaking, there are two main stages of creating nft project before actually selling it on the market: 1. phase before minting 2. phase after minting minting represents the moment when nft is published on the blockchain, and from then on, it can be bought, sold and traded. 3.6.1. phase before minting for a successful nft project, the nft creator must make good use of the period before the actual public announcement. it needs to tell the whole story behind the created nft, why customers should buy that particular nft, what makes it specific compared to others, what value it gives to its customers, how exclusive it is and so on. that is, it is necessary to create hype, the part when a good marketing strategy is the key to the success of the project. it consists of encouraging the audience for the project. it also includes whitelisting and giveaways. considering that nfts that manage to create a viral effect usually end up methodology of creating nft fashion projects 39 being sold out, it is necessary to take the time to create a good strategy and learn how to create peaks. therefore, the greater the hype, the greater the opportunity to sell nfts. this phase has a positive effect on the price of nfts. also, in this phase, the success of the entire nft project is evaluated—tokenomics – nft project economics. there is a rule in the nft market: low supply, high demand. after that, it is necessary to determine in which market the nft owner will offer his digital asset, “algorand”, “opensea”, “foundation”, “rarible”, etc. this is followed by the creation of a smart contract, as well as all the characteristics of the digital asset that is published for proof of authenticity. then you need to create a community before publishing. the best social network for creating a community, but the sheer excitement surrounding an nft announcement, is twitter. each creator of nfts must define the target group of their customers, get to know them, what they want from nfts, and what value they value [25]. at the very end comes the disclosure of nft. 3.6.2. phase after minting later, after the discovery of the nft, the owner of the nft enters the second phase, the post-mint phase. it is up to the owner to define a new way to stimulate their customers to keep buying. this phase represents the execution of the roadmap and consists of two elements, the first is when the excitement dies down after the release itself, and the second element is about adding new features to the project, such as collaborations, metaverse, games and the like. also, at this stage, the owner can see if he has chosen good strategies when publishing nft, the way customers behave, but also use them for further work and creation [26]. 4. nft fashion design project 4.1. blockchain-based ecosystem for the fashion industry in this section, we have provided the system design architecture and sequence diagram. figure 1 shows a model of the proposed nft ownership tracking and management system for digital fashion apparel, the stakeholders involved, and their interaction with smart contracts. for example, an individual fashion designer who does not have the technical knowledge to create 3d models can hire a company that provides 3d modelling. after that, the smart contract is launched, as it represents a single transaction. after the transaction and the 3d digital fashion design are complete, the fashion designer can place the nft on the market for sale. before the release, the fashion designer can hire a marketing company to create hype around his non-fungible fashion token. if this situation is decided upon, the smart contract is also triggered. after the hype is raised, the nft minting is done; the next step is the sale itself. the sale is based on the auction system. after the auction is over, the buyer who offered the highest price checks the data and buys the nft and becomes the new owner of the nft. in further documentation, one part of the solution from the proposed ecosystem is presented. a detailed description of the components is in the continuation of the documentation. the main stakeholders in the proposed ecosystem are (figure 2): 1. an independent fashion designer (not working for any fashion company) prepares their product for placement on a platform or marketplace. company that makes software for 3d fashion modelling, fashion designers who do not have technical 40 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić knowledge can hire 3d modelling companies to create fashion designs. if the fashion designer is well-known, companies can offer them various benefits in exchange for advertising their software. 2. company that makes video games (unity, unrealengine) allows products to be available in the game and provides a link to purchase them on the marketplace. the fashion designer pays a fee to the company to represent their collections in their game. fig. 2 blockchain-based ecosystem for the fashion industry 3. marketing company helps fashion designer better market their product and generate hype before the reveal. the best outcome is creating a viral effect. social media is used, and a digital campaign is created to attract the attention of as many people as possible. fashion items from the fashion designer's nft collections are promoted. methodology of creating nft fashion projects 41 4. customer views and purchases fashion items on the marketplace or platform. the buyer can use nfts in the metaverse, as well as in video games. the entire purchasing process is covered by a smart contract. milestones of the road trip are clearly defined, so the customer knows exactly what benefits they will gain within a certain timestamp by purchasing the specific nft. platform/marketplace where independent fashion designers place their products and where buyers view and purchase products. all financial transactions among all participants in the blockchain system are carried out using smart contracts, digital wallets, and electronic banking services. all transaction data is stored in the blockchain ledger within the chosen platform. the platform provides fashion designers with the ability to place their 3d fashion creations as nft collections. there is also a case where the designer does not create 3d models but traditional ones. in that case, the platform can connect the fashion designer with a 3d designer who will create their existing designs in 3d. in figure 3, the sequence diagram is a more detailed representation of the relationships and interactions between stakeholders and smart contracts in the nft-based fashion ecosystem. as a first step, it is necessary to register all participants and interested parties, i.e. fashion designer and buyer. then, a fashion designer with no technical knowledge requests a quote from a 3d modelling company and a smart contract is launched. the 3d modelling company checks if the fashion design is in virtualinventory; if it is, it uploads it to ipfs and asks for approval from the fashion designer; also, in this case, a smart contract is launched. the fashion designer approves the digital fashion design, and the smart contract is launched. as a next step, the fashion designer may or may not seek bids from marketing campaigns to create hype around the nft before the actual minting. in case he chooses to cooperate with the company, a smart contract is also launched. after that, the fashion designer puts the digital fashion design in nft format on the market, with the sale via auction. the auction has started, and the buyer sets his price. after the auction is over, a smart contract is launched, and algos is transferred from the buyer’s account to algorand's account as revised funds to guarantee the fashion designer that he will be paid for the purchased digital fashion item. after checking all the data, a smart contract is launched, and the state of ownership is changed from the fashion designer to the customer. also, the customer can rate the fashion designer and thus increase the reputation of both the fashion designer and himself. in case when developing a video game, a video game company needs an item of clothing for a character in the game, they can ask a fashion designer for a design. in that case, the fashion designer checks if he already has a design. it creates a given design and uploads it to ipfs as hashed so that the video game company can see the design and approve it. in this case, a smart contract between a fashion designer and a video game company is triggered. in this sequence diagram, only one flow of steps that can be formed is represented. 42 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić fig. 3 sequence diagram methodology of creating nft fashion projects 43 4.2. business model for fashion nfts the main purpose of business model canvas is to show how a company operates, to whom it sells its products or provides a service, and how it does it. it also shows how value is created and delivered to customers. it also serves to attract the attention of investors and investment partners. figure 4 shows the business model for fashion nfts. the goal of the model is to show an innovative way of applying nft and blockchain technology in the business of the fashion industry. business idea: one place for all fashion nfts, a direct connection between fashion designers and customers and the application of blockchain in the fashion industry products and services: minting nfts on the algorand blockchain, connecting fashion designers with 3d modelling and video games companies key partners investors fashion designers algorand companies that create software for 3d modelling nifty getaway marketing companies decentraland metaverse key activities processing the entire buying and selling process “p2p” trading of digital assets exhibiting collections in a showroom kyc protection connecting fashion designers with companies to create digital clothing value propositions marketplace with a large number of fashion nfts marketplace that provides exhibition space for 3d avatars in the metaverse source platform for transactions and preserving integrity platform that brings together a large number of fashion enthusiasts, creating an nft community relationship with users social media presence discounts on metaverse clothing purchases benefits while playing video games decentraland fashion week customer segments people who buy nfts in the case of popular nfts, buyers who participate in auctions to outbid others customers who play video games collectors people for metaverse influencers fashion enthusiasts key resources active customers digital assets physical space computers technical support fashion designers human resources channels websites android and ios applications video games metaverse social media platforms cost structure electricity costs nft trading costs marketing costs smart contract costs creator royalties costs legal expenses costs platform maintenance costs salary, depreciation and space maintenance costs costs of employee skills development revenue streams revenue from services for showcasing fashion collections revenue from in-game purchases of fashion items in video games revenue from nft sales revenue from listings revenue from initial fees revenue from nft minting revenue from renting exhibition space 44 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić fig. 4 business model for fashion nfts, adapted from [27] 4.3. marketing strategy the marketing industry is increasingly embracing the potential of blockchain technology and slowly implementing it into their activities. also, merchants see the benefits of using blockchain technologies because they can offer a new type of value to their customers. as technology is still emerging, marketing managers, as well as marketers, are reluctant to completely surrender to modern technologies precisely because of the lack of technical understanding and large advertisements, and they decide to adopt a “wait and see” attitude [28]. fashion brands are increasingly faced with the fact that it is difficult to maintain a relationship with customers as a sales item and prolong their stay in a loyalty program, and as a marketing strategy is one of the key components of a successful business, innovation must be introduced. although we live in the 21st century, in the year 2022, in a world where the internet is a normal thing and forms an integral part of our lives, consumers still have an aversion when shopping on the internet. the two crucial factors that prevent consumers from making an online purchase and are taken into consideration are trust and risk. traditionally, the foundation of online shopping is based on convincing consumers that their transactions are secure, reliable and risk-free. but still, the percentage of uncompleted purchases is very high. as nfts, i.e. non-fungible tokens, are decentralized on the blockchain, there is a noticeable difference compared to traditional, centrally-based online purchases. the marketing implications unique to nft as a decentralized application are reflected through the provision of authentication, proof of ownership, non-fungibility, royalty, direct infrastructure distribution and the like [29]. as nfts can be stand-alone components of fashion brands, three sessions describe how fashion brands can use marketing tricks to influence consumers. the first session covers the pre-purchase phase. in the pre-purchase phase, fashion brands must make efforts to create attitudes, that is, focus and develop their nft collections that will strive to create brand awareness. the second session covers the purchase phase. consumers decide whether to place their trust in one fashion brand or another, after which they develop a purchase. as fashion brands face competition, it is necessary to develop an nft collection that will create a positive impact on customers, emphasizing attractive features and elements. the third and final session involves the post-purchase phase. after the purchase, consumers compare their pre-purchase expectations with the post-purchase experience and potentially develop loyalty towards the chosen fashion brand. the last session is the least sensitive to marketing targeting [30]. 4.4. smart contract a smart contract is a self-executing program that makes the tasks specified in a contract or agreement automatic. the transactions are irreversible and traceable once they are finished. to put it simply, smart contracts are blockchain programs that enable each party to a transaction to fulfill its portion. they make it possible for reliable agreements and transactions to be conducted out amongst dispersed, anonymous persons without requiring a centralized authority, a legal framework, or outside enforcement mechanisms [31]. there are quite a few popular blockchain networks, like ethereum, bitcoin and algorand. in the practical example in this document, algorand was precisely used. with a methodology of creating nft fashion projects 45 two-tiered structure and a special version of the proof-of-stake (pos) consensus process, algorand is an open-source, decentralized blockchain network that aims to speed up transactions and achieve finality. all algo coin holders have the potential to get benefits through algorand's block rewards, which are awarded to all algo holders rather than simply block creators [32]. there are a few languages that are used for writing smart contracts. some of them are solidity, reach and pyteal. in the practical example shown in this document, pyteal programming language was used specifically. pyteal is a python language binding for algorand smart contracts (asc1s). algorand smart contracts are implemented using a new language that is stack-based, called transaction execution approval language (teal). but teal is really simply an assembly language. pyteal allows programmers to use only python to express smart contract logic. using type checking at construction time, pyteal offers high-level abstractions in the style of functional programming over teal. in this section, examples are shown for modelling smart contracts between a fashion designer and a 3d digital fashion garment modelling company, for example, clo3d. also, between a fashion designer and a marketing company. then a real example of a smart contract between a fashion designer and a customer for a minted fashion nft. a smart contract is created in the pyteal programming language. figure 5 shows a smart contract where a fashion designer without technical knowledge requests a certain design from a company for 3d fashion design. the input includes the id of the fashion designer and the id of the design of the fashion garment. the smart contract verifies the data and publishes an event. fig. 5 algorithm for fashion designers seeks 3d fashion design once the design is completed, clo3d uploads the file and simulations to ipfs and creates a hash so that the fashion designer can access the uploaded files. then, clo3d requests approval from the fashion designer for the created digital garment. the input includes the clo3d id, fashion garment id, and the ipfs hash of the design, figure 6. the hash allows the fashion designer to access the necessary data, verify and examine it, and ultimately make a decision. 46 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić fig. 6 algorithm for clo3d requests approval from a fashion designer after the 3d design of the requested clothing item is created, the fashion designer accepts or rejects the offer, and an event is triggered accordingly. in case the created design is part of a virtual inventory, the id of clo3d is replaced with the id of the virtual inventory. the input includes the id of the fashion designer, the id of the fashion garment, and the decision of the fashion designer. the smart contract first verifies the identity of the fashion designer and then his decision regarding the 3d fashion clothing design (figure 7). fig. 7 algorithm for the fashion designer’s decision in figure 8, after accepting the 3d fashion design from clo3d, the next step for the fashion designer is to seek proposals from marketing companies for the best placement of the 3d design on the platform. the input includes the id of the fashion designer and the id of the marketing company. the smart contract verifies the data and publishes the event. methodology of creating nft fashion projects 47 fig. 8 algorithm for fashion designers requesting proposals from marketing agencies after receiving a notification that the fashion designer is seeking offers for a campaign, the marketing company submits their proposal, including marketing strategy, campaign start time, and similar information, directly to the fashion designer. the input includes the id of the marketing company, the id of the campaign, and the price (figure 9). fig. 9 algorithm for marketing company’s offers the last one, figure 10, shows after the marketing company has created an offer for the marketing strategy, the fashion designer accepts or rejects the offer. if the fashion designer approves, an event is triggered, announcing that the fashion designer has accepted the offer. otherwise, a notification is received that the fashion designer has rejected the offer. the input includes the id of the fashion designer, the id of the campaign, and the fashion designer's decision about the campaign. fig. 10 algorithm for fashion designer’s decision 48 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić 5. implementation of nft fashion project 5.1. methodology of creating nft fashion collection the development of the following study example is based on certain steps that need to be taken when creating an nft collection in fashion design. the steps for creating an nft fashion collection [33, 34] are: 1. first step: choosing a fashion garment. as irreplaceable tokens represent digital art in the form of images, audio productions, and even video, the goal is to create unique content [35]. therefore, the first step includes the idea itself, determining what the designer wants to present as a non-exchangeable token, which is the garment. rarity is something that brings and determines the value of the nft itself, and the very verification of ownership of intellectual property rights contributes to that rarity. also, the designer can offer his customers a physical product in addition to the digital garment. for this project, we decided that the digital fashion garment should be a bag. 2. second step: choosing blockchain technology. several types of blockchain technologies can permanently store immutable tokens. ethereum, the most popular nft blockchain, stores thousands of non-fungible tokens. the ethereum nft that was created supports the erc-721 standard, which stores metadata on the ethereum blockchain. ethereum operates on a proof-of-stake (pos) consensus. then, solana is a faster and cheaper variant of the ethereum blockchain, providing a list of supported applications for non-fungible tokens. solana works on proof of history (poh) and consensus mechanism (pos). the difference with ethereum is in fast transactions [35]. algorand is a new-generation blockchain technology which also provides its users with scalability and a consensus mechanism based on pos. its goal is to lower the security risk associated with smart contracts, among other things [36]. for this project, we chose the algorand blockchain. 3. third step: setting up a digital wallet. once blockchain technology is chosen, it is necessary to choose a digital wallet that supports that blockchain. creating a digital wallet requires downloading a crypto wallet app, logging into an account and saving private keys for offline recovery, and among other things, requires purchasing a specific cryptocurrency. several popular digital wallet applications are distinguished, such as “metamask”, “peraalgo wallet”, “coinbase wallet”, “ledger nano x”, and the like. since we chose the algorand blockchain for the project, the logical step is to use “pera algo wallet” for the digital wallet. 4. fourth step: selection of nft markets. the creation process itself can begin when the designer has a digital wallet and some cryptocurrency. the next fourth step refers to the selection of the market where the non-deceptive token will be traded. as already mentioned, there are various nft markets such as: “algorand”, “opensea”, “larva”, “rarible”, “superrare” and others. after choosing a market, the next step involves connecting to a digital wallet. in this way, it is possible to create the non-fungible token itself, and therefore it is possible to retain the income from the sale. we have chosen to mint our nft on the rand gallery market, algorand platform. this is presented in figure 11. methodology of creating nft fashion projects 49 fig. 11 minted nft 5. fifth step: creation of the nft. after the idea is conceived, the blockchain technology is chosen, the digital wallet is chosen, and then the market in which the non-fungible tokens will be traded is chosen, and then the associated market with the digital wallet; the next step involves the creation of the nft itself. the idea is to create a digital fashion clothing collection that can be presented as an nft. figure 12 shows an example of how a fashion designer can display his fashion garments. fig. 12 makawe collection 6. sixth step: launch the nft. in each nft market, there are exact instructions on how to set up the nft in a proper way, and in this way, it is possible to generate a marketable nft from a digital file. choosing the nft monetization method itself is the last step. some markets allow a stock or fixed price to be specified. but for the nft to be resold on the secondary markets, the owner of the nonfungible token himself must set the minimum price, royalties and auction length. after all these steps, only trading on the non-fungible token market can begin. 50 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić 5.2. dapp for the fashionblock platform in this section, the frontend of the application represents only one part of the proposed overall solution. the application was created using react js. it shows the interaction between a fashion designer and a customer. according to figure 13a, the user first needs to select a role. in case the fashion designer is applying, he needs to choose the role of fashion designer, and in case he is a customer, he needs to choose the role of customer. the first use case involves the customer. after the customer has chosen his role, and to ensure that the customer will pay the fashion designer for the digital fashion garment, he needs to connect his digital wallet, figure 13b. the customer must have pera algo wallet installed on his mobile phone, and he needs to scan the qr code. then it needs to accept the connection with the “fashionblock” platform. figure 13c shows a situation where the customer selects the material he wants and applies it to buy nft. fig. 13 dapp for the fashionblock platform another use case involves a fashion designer. the fashion designer also needs to choose a role, in this case, the fashion designer, figure 13d. a fashion designer needs to connect his digital wallet to complete the transaction and transfer the funds. this is shown in figure 13e. after that, it is necessary to select the material used in the creation of the digital garment, i.e. the bag, and start the transaction, figure 13f. in case the customer's material is searched for, it matches the material used, and after the customer has reviewed the data and accepted the nft, the transaction is executed. and therefore, the transfer of ownership from the fashion designer to the customer. methodology of creating nft fashion projects 51 6. conclusion introducing modern technologies into fashion and fashion design has potential and, so far, has proven to be a smart decision. just by implementing non-fungible tokens in their business models, fashion brands keep pace with the development of technology. they are moving forward and securing their position in the web 3.0 space. this is exactly what can be defined as a characteristic of fashion itself. fashion brands provide their customers with a new shopping experience and new forms of the products themselves but also ensure greater loyalty. with digital fashion, there are no boundaries; the only limit is human imagination. the fashion nft market is still underdeveloped, implying that there is scope for some new and better things. among other things, the ecosystem of non-fungible tokens provides an opportunity for young designers to establish cooperation with more experienced designers. as it is still developing, there is a place for everyone, and the market itself is not overloaded; you just need to stay consistent, creative and persistent. a new world of digital fashion is created by combining software settings for 3d clothing modeling with virtual reality and augmented reality. this allows users to make and sell nfts as well as wear digital fashion items in the metaverse. there is a lot of misunderstanding about what nft represents. it is usually associated with some kind of ownership or certificate, but it is indeed much more than just that. this project represents the application of the methodology for creating nft fashion projects, covering each step-in detail. the steps involved include minting a collection of 3d fashion items and selecting appropriate target groups, as well as the elements necessary for the appropriate market to launch nft collections. the created nft collection was minted in the “rand gallery”, and a smart contract was developed to purchase nfts. the pyteal programming language was used to develop the smart contract. the transaction is presented using the “algorand” platform and “algoexplorer”. in future research directions, the development of nft marketplaces is planned, with a focus on enhancing user experience, ensuring transparency, and exploring innovative features to propel the evolution of the nft fashion ecosystem. references [1] h. mcquilln, "digital 3d design as a tool for augmenting zero-waste fashion design practice", international journal of fashion design, technology and education, vol. 13, no. 1, pp. 89-100, 2020. [2] n. särmäkari, "digital fashion on its way from niche to the new norm", fashion theory russia: dress, body and culture, 2022. [3] j. a. fairfield, "tokenized: the law of non-fungible tokens and unique digital property", indiana law journal, vol. 97, no. 4, 2022. [4] g. wood, "ethereum: a secure decentralised generalised transaction ledger", ethereum project yellow paper, vol. 151, pp. 1-32, 2014. [5] m. franceschet, g. colavizza, t. smith, b. finucane, m. l. ostachowski, s. scalet, j. perkins, j. morgan and s. hernandez, "crypto art: a decentralized view", leonardo, vol. 54, no. 4, pp. 402-405, 2021. [6] f. regner, a. schweizer and n. urbach, "nfts in practice – non-fungible tokens as core component of a blockchain-based event ticketing application", in proceedings of 40th international conference on information systems, munich, 2019. [7] r. musiala, j. wasick, k. murphy and v. reynolds, introduction to non-fungible tokens, bakerhostetler, 2022. [8] k. lau, "non-fungible tokens," a brief introduction and history, 2020. [9] q. wang, r. li, q. wang and s. chen, "non-fungible token (nft): overview, evaluation, opportunities and challenges,", 2021 [preprint]. 52 m. simić, k. šikman, m. vrljanac, v. despotović, m. despotović-zrakić [10] m. gurock, l. de lima and j. ekberg, "a primer on the metaverse and nfts", oliver wyman forum, 2022. [11] s. mystakidis, "metaverse", encyclopedia, no. 2, pp. 486-497, 2022. [12] l.-h. lee, t. braud, p. zhou, l. wang, d. xu, z. lin, a. kumar, c. bermejo and p. hui, "all one needs to know about metaverse: a complete survey on technological singularity, virtual ecosystem, and research agenda", 2021 [preprint]. [13] d. stefanoski and s. fuchs, "tokenization of assets", ey, basel. [14] "asset tokenization: what it is and how it works", chainlink, may 2023. [online]. available: https://chain.link/education-hub/asset-tokenization. [15] "fashion and nft. which fashion brands created their own nft collections", gamespad, [online]. available: https://gamespad.io/fashion-and-nft-which-fashion-brands-created-their-own-nft-collections/. [16] e. kirjavainen, "the future of luxury fashion brands through nfts", master's thesis, department of marketing aalto university school of business, 2022. [17] j. dugal, "top 5 most popular nfts in fashion", fashionbeta, [online]. available: https://www.fashionabc. org/top-5-popular-nfts-fashion/. [18] "digital fashion: from concept to consumer at timberland", unreal engine, september 2022. [online]. available: https://www.unrealengine.com/en-us/spotlights/digital-fashion-from-concept-to-consumer-attimberland. [19] t. harrsion, "fashion nfts are here to stay in 2022", hypebae, march 2022. [online]. available: https://hypebae.com/2022/3/metaverse-fashion-week-nfts-trend-tommy-hilfiger-balmain-rtfkt. [20] r. ginsburg, "fashion design and nfts a guide to help you break into web3", nftnow, 9 september 2022. [online]. available: https://nftnow.com/guides/fashion-design-and-nfts-a-guide-to-help-you-breakinto-web3/. [21] "top 5 of brands with the most nft revenue in 2022", metav.rs, [online]. available: https://metav.rs/ blog/5-brands-most-nft-revenue/. [22] r. sharma, "non-fungible token (nft): what it means and how it works", investopedia, april 2023. [online]. available: https://www.investopedia.com/non-fungible-tokens-nft-5115211. [23] a. jalli, "best nft design software of 2023", codingem.com, [online]. available: https://www.codingem. com/best-nft-design-software/. [24] c. team, "minting crypto", cfi, january 2022. [online]. available: https://corporatefinanceinstitute. com/resources/cryptocurrency/minting-crypto/. [25] o. retail, "9 steps for a successful nft drop: hype, fairness & fun", queue.it, december 2021. [online]. available: https://queue-it.com/blog/successful-nft-drop/. [26] l. almeida, "how to create an nft in 5 steps", designity, august 2022. [online]. [27] a. osterwalder, business model generation: a handbook for visionaries, game changers, and challengers, wiley, 2010. [28] g. i. s. parrales and b. batbayar, "exploring the impacts of nfts in marketing strategies and customer relationships", may 2022. [online]. available: https://lup.lub.lu.se/luur/download?func=downloadfile& recordoid=9084109&fileoid=9084245. [29] r. chohan and j. paschen, "nft marketing: how marketers can use nonfungible tokens in their campaigns, r. chohan, j. paschen", business horizons, vol. 66, no. 1, pp. 43-50, 2023. [30] a. colicev, "how can non-fungible tokens bring value to brands", international journal of research in marketing, 2022. [31] m. shou and t. domenech, "integrating lca and blockchain technology to promote circular fashion – a case study of leather handbags", journal of cleaner production, vol. 373, p. 133557, 2022. [32] d. wang, q. ren, x. li, y. qi and q. zhou, "defining consumers interest and future of nft fashion", in proceedings of international conference on social sciences and humanities and arts, nanjing, china february, 2022. [33] d. pavić, "methodology and tools for the creation of nft collections on ethereum blockchain", november 2022. [online]. available: https://bc.elab.fon.bg.ac.rs/2022/11/02/professor-keeting-was-our-guest-microlecture-methodology-and-tools-for-the-creation-of-nft-collections-on-ethereum-blockchain/. [34] m. vrljanac and k. šikman, "nfts in the fashion industry", march 2023. [online]. available: https://bc.elab.fon.bg.ac.rs/2023/03/29/nfts-in-the-fashion-industry/. [35] j. wade, "how to create an nft", investopedia, october 2022. [online]. available: https://www.investopedia. com/how-to-create-an-nft-6362495. [36] y. xu, t. slaats, b. düdder, s. debois and h. wu, "distributed and adversarial resistant workflow execution on the algorand blockchain", 6th workshop on trusted smart contracts, 2022 [preprint]. https://www.unrealengine.com/en-us/spotlights/digital-fashion-from-concept-to-consumer-at-timberland https://www.unrealengine.com/en-us/spotlights/digital-fashion-from-concept-to-consumer-at-timberland 11176 facta universitatis series: electronics and energetics vol. 36, no 2, june 2023, pp. 253-266 https://doi.org/10.2298/fuee2302253m © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper the fredkin gate in reversible and quantum environments claudio moraga1, fatima z. hadjam2 1technical university of dortmund, dortmund, germany 2university of djillali liabes, sidi bel abbes, algeria abstract. reversible computing circuits are characterized by low power consumption and their proximity to circuits for quantum computing. the fredkin gate was one of the earliest proposed controlled reversible circuits, which however, was soon superseded by the toffoli gate, the not, and cnot gates, which constituting a flexible functionally complete set could also realize the fredkin gate as a building block. in quantum computing circuits, the fredkin gate (under the name controlled swap) plays an important role regarding the superposition of states. the present paper studies extensions of the fredkin gate in terms of mixed polarity in the reversible domain and an application in quantum computing. keywords: fredkin gate, reversible circuits, quantum computing circuits 1. introduction the earliest contributions to the development of reversible computing circuits may be traced back to e. fredkin [6] and t. toffoli [26] who introduced the first controlled reversible gates. a reversible gate realizes a bijection. therefore, it does not lose information. if the outputs are known, then the inputs may be precisely recovered. the realization of reversible circuits as fanout-free and feedback-free cascades of reversible gates was stimulated by r. landauer‘s theorem [9] stating that erasing or deleting information in a circuit produces heat dissipation. moreover, c. bennet [2] showed that a computer could work with low power dissipation if all its circuits would be reversible. since the early times most work on the synthesis of reversible circuits has been based on the set of gates {not, cnot, toffoli}, known as nct, which is functionally complete. the symbols and functionality of these gates in a common environment of two (eventually) controlling lines and a target line are shown in fig. 1. received october 05, 2022; revised january 13, 2023; accepted january 18, 2023 corresponding author: claudio moraga technical university of dortmund, 44221 dortmund, germany e-mail: claudio.moraga@tu-dortmund.de received september 29, 2022; revised december 11, 2022; accepted january 06, 2023 254 c. moraga, f. z. hadjam fig. 1 symbols and functionality for the reversible gates not, controlled not and toffoli the not gate (represented with an exor symbol) is not controlled and acts directly on its target line. in the cnot and toffoli gates, control signals and target signals are distinguished. the not component acts on the target signal whenever the control signals have the value 1. black dots identify which signal or signals are controlling the not component. the design of minimal boolean circuits is known to be np-complete, and the design of minimal reversible circuits is np-hard [20]. this has led to the development of different heuristics to synthesize reversible circuits [4], [17], [21], [24], [25], and also to postprocessing strategies to improve the minimization of circuits [19], [23]. in the last 25 years there have been important developments that have contributed to the improvement of the synthesis methods. among the most relevant from the hardware point of view are the increasing speed of computers and the increasing size of memories. this has opened the possibility of including search [12], evolutionary algorithms [7], [8], [10] or sat solvers [17] for the synthesis of reversible/quantum circuits. at the software side, the development of specialized efficient libraries may be mentioned. at the level of gates, both the use of the value 0 for control signals identified by “white dots” [23], [14], frequently referred to as “mixed polarity”, and the use of disjoint control signals [13], [15] may be mentioned. in what follows, the “generalization” of fredkin gates in the reversible domain and a relevant application in the quantum domain will be analyzed. it may be mentioned that in [5] the term “generalized fredkin gate” is used, referring to fredkin gates with multiple control lines. 2. the reversible domain it is not known whether the fredkin gate ever had an own representation symbol (other than a box with three inputs and three outputs). possibly a first symbolic representation was introduced in [11], which has been later replaced by the symbol used in circuits for quantum computing, as in e.g. [5]. in the literature this gate appears frequently as a toffoli and cnots building block, as shown in fig. 2 (left). in what follows, this building block will frequently be called simply fredkin “gate” and will be used to illustrate the effects of mixed polarity. at the output side, variables will have a prime apostroph sign. (complemented variables, on the other hand, will have a dash over their names, as frequently used in switching theory.) in the barenco et al. based quantum model [1], fig. 2 (right), a white box represents a v gate, whose functionality equals the square root of not and the box with a diagonal represents the adjoint of v. fig. 2 representation of the fredkin gate as an nct building block with positive control (left) and its barenco et al. based quantum model (right) the fredkin gate in reversible and quantum environments 255 the functionality of the building block representing the fredkin gate is given by: 𝑐3 ′ = 𝑐3 ⨁ 𝑐1(𝑐2 ⨁ 𝑐3) = 𝑐3 ⨁ 𝑐1𝑐2 ⨁ 𝑐1𝑐3 = 𝑐1𝑐2 ⨁ 𝑐1̅𝑐3, 𝑐2 ′ = 𝑐2 ⨁ 𝑐3 ⨁ 𝑐3 ′ = 𝑐2 ⨁ 𝑐3 ⨁ 𝑐1𝑐2 ⨁ 𝑐1̅𝑐3 = 𝑐1̅𝑐2 ⨁ 𝑐1𝑐3, (1) 𝑐1 ′ = 𝑐1 . equations (1) may be expressed in the following summary: c1 = 0 c1 = 1 c2’ c2 c3 c3’ c3 c2 the tableau expressed in words means that whenever c1 has the value 0, the fredkin gate behaves as an identity, whereas when c1 has the value 1, then the target signals c2 and c3 are exchanged. this means that the fredkin gate behaves as a “controlled swap” although this name is hardly used in the community working on reversible circuits. an important property of the fredkin gate is its completeness.in (1), let c2 = 1. then: c2’ = 𝑐1̅ ⊕ 𝑐1𝑐3 = 1 ⊕ 𝑐1 ⨁𝑐1𝑐3 = 1 ⨁ 𝑐1𝑐3̅ = 𝑐1̅ ∨ 𝑐3 = 𝑐1 → 𝑐3 on the other hand, if for some x 𝑐1 → (𝑥 → 0) then 𝑐1 → (�̅� ∨ 0) = 𝑐1 → (�̅�) = �̅�1 ∨ �̅� = 𝑐1𝑥̅̅ ̅̅ = nand(𝑐1, 𝑥). since nand is functionally complete, so is also fredkin complete. a different formal representation of the fredkin gate, appropriate to determine e.g. the performance of (simulated) circuits [28], is that of a transfer matrix. c1 c2 c3 c1’c2’c3’ [ 1 0 0 1 0 0 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 1 0 0 1 0 0 0 0 0 1] ∙ [ 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 1 1 0 1] = [ 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 1 0 1 1 0 1 1 1] . (2) equation (2) shows a fredkin-matrix as a blockdiag(i4, swap), where i4 denotes the 4⨯4 identity matrix. it becomes clear that the product of the fredkin-matrix with a matrix of all possible inputs preserves c1, c2 and c3 when c1 = 0, since the i4 submatrix is active and c1’c2’c3’ = c1 c3 c2 when c1 = 1, since then the swap submatrix is active. if a white dot is placed on the c1 line of the original fredkin gate, it is fairly obvious, that this will change the polarity of the control. the gate will become active when c1 = 0 and it will remain inhibited, behaving as an identity, when c1 = 1. the circuit and the quantum model of a fredkin gate, which is active when the control signal c1 has the value 0 is shown in fig. 3, where the quantum model uses the same twoqubit-gates as in fig. 2, but in a different order. = 256 c. moraga, f. z. hadjam fig. 3 a fredkin gate with negative control and its quantum model since the quantum cost of a reversible gate is obtained as the gate count of the barenco et al. quantum model of the gate [22], [27], it becomes apparent that fredkin gates with positive or negative control have the same quantum cost of 7. a set of new behaviors is obtained if white dots are introduced in the lines c2 or c3, indicating that a signal is effective if it has the value 0. a first pair of equivalent variations is shown in fig. 4. fig. 4 fredkin gate equivalent variations the functionality of the building block at the left of fig. 4 is given by: 𝑐3 ′ = 𝑐3 ⊕ 𝑐1(𝑐3̅ ⊕ 𝑐2) = 𝑐3 ⊕ 𝑐1𝑐3̅ ⊕ 𝑐1𝑐2 = 1 ⊕ 𝑐3̅ ⊕ 𝑐1𝑐3̅ ⊕ 𝑐1𝑐2 = = 1 ⊕ 𝑐1̅𝑐3̅ ⊕ 𝑐1𝑐2, (3) 𝑐2 ′ = (𝑐3 ⊕ 𝑐2) ⊕ 𝑐3 ′ = 1 ⊕ 𝑐3 ⊕ 𝑐1̅𝑐3̅ ⊕ 𝑐2 ⊕ 𝑐1𝑐2 = 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3̅, 𝑐1 ′ = 𝑐1 . equations (3) may be summarized as follows: in words: if c1 = 0 the building block behaves as an identity and if c1 = 1 both targets will be exchanged and complemented. it is straightforward to show that the gate at the right of fig. 4 has the same functionality. further variations, and eventually their equivalent nct reversible circuits are analyzed below. fig. 5 second fredkin gate variation v v c1 c2 c3 c1‘ c2‘ c3‘ the fredkin gate in reversible and quantum environments 257 the functionality of the building block of fig. 5 is given by: 𝑐3 ′ = 𝑐3 ⊕ 𝑐1(𝑐2 ⊕ 𝑐3̅) = 1 ⊕ 𝑐3̅ ⊕ 𝑐1𝑐2 ⊕ 𝑐1𝑐3̅ = 𝑐1𝑐2 ⊕ 𝑐1̅𝑐3̅ ⊕ 1, 𝑐2 ′ = 𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐3 ′ = 𝑐2 ⊕ 𝑐1𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐1̅𝑐3̅ ⊕ 1 = 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3̅ ⊕ 1, (4) 𝑐1 ′ = 𝑐1. equations (4) may be summarized as follows: in words: if c1 = 0 then c2 will be complemented and c3 will be preserved. if c1 = 1 then the complement of c2, and c3 will be swapped. a third variation is shown in fig. 6. fig. 6 third variation of the fredkin gate the functionality of the building block of fig. 6 is given by: 𝑐3 ′ = 𝑐3 ⨁ 𝑐1(𝑐2 ⨁𝑐3) = 𝑐1𝑐2 ⨁ 𝑐1𝑐3 ⨁𝑐3 = 𝑐1𝑐2 ⨁ 𝑐1̅𝑐3, 𝑐2 ′ = (𝑐2 ⊕ 𝑐3) ⊕ (𝑐3 ′ ⊕ 1) = 𝑐2 ⊕ 𝑐3 ⊕ 𝑐1𝑐2 ⨁ 𝑐1̅𝑐3 ⊕ 1 = (5) = 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3 ⊕ 1, 𝑐1 ′ = 𝑐1 . equations (5) may be summarized as follows: in words: if c1 = 0 then c3 will be preserved, but c2 will be complemented. if c1 = 1 then the signal c3 will be complemented and swapped with c2. from all former variations follows that a variation comprising two white dots at the bottom and a white dot at the center of the middle line will have the same functionality as the original fredkin gate. this is illustrated in fig. 7. fig. 7 equivalent fredkin gates 258 c. moraga, f. z. hadjam for the same reasons, the following variations on the fredkin gate are equivalent, as illustrated in fig. 8. fig. 8 further equivalence of fredkin variations an additional way of introducing variations on the fredkin gate consists of replacing the classical toffoli gate with a disjunct controlled toffoli gate [13], [15] possibly called “or-toffoli”. for this gate, up-side-down triangles –(black or white)– are used instead of dots to identify the effectivity of driving control signals with value 1 and 0, respectively. up-side-down triangles are used, based on their similarity with “”, the disjunction symbol in mathematical logic. a different variation, based on the or-toffoli gate, is shown in fig. 9 and may be called “or-fredkin”. notice that the quantum model based on [1] does not use an adjoint v gate, but otherwise it uses the same gates as in the quantum model of the classical fredkin gate. therefore, it has the same quantum cost, 7. fig. 9 the or-fredkin gate and its quantum model the functionality of the building block of fig. 9 (left) is given by: 𝑐3 ′ = 𝑐3 ⊕ (𝑐1 ∨ (𝑐2 ⊕ 𝑐3)) = 𝑐3 ⊕ 𝑐1 ⊕ 𝑐2 ⊕ 𝑐3 ⊕ 𝑐1(𝑐2 ⊕ 𝑐3) = = 𝑐1 ⊕ 𝑐2 ⊕ 𝑐1(𝑐2 ⊕ 𝑐3) = 𝑐1 ⊕ 𝑐2 ⊕ 𝑐1𝑐2 ⊕ 𝑐1𝑐3 = 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3̅, (6) 𝑐2 ′ = 𝑐3 ⊕ 𝑐2 ⊕ 𝑐3 ′ = 𝑐3 ⊕ 𝑐2 ⊕ 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3̅ = 1 ⊕ 𝑐1̅𝑐3̅ ⊕ 𝑐1𝑐2, 𝑐1 ′ = 𝑐1. equations (6) may be summarized as follows: c1 = 0 c1 = 1 c2’ 𝑐3 𝑐2̅ c3’ 𝑐2 𝑐3̅ an equivalent nct circuit may be obtained, as shown in fig. 10, where the two gates in the middle have the functionality of the or-toffoli gate. fig. 10 an nct equivalent circuit for the or-fredkin gate the fredkin gate in reversible and quantum environments 259 another variation is illustrated in fig. 11, where for an or-toffoli gate, a white dot at the input side is introduced. fig. 11 a simple variation of the or-fredkin gate the functionality of the building block of fig. 11 is given by: 𝑐3 ′ = 𝑐3 ⊕ (𝑐1 ∨ (𝑐2 ⊕ 𝑐3̅)) = 𝑐3 ⊕ (𝑐1 ⊕ (𝑐2 ⊕ 𝑐3̅) ⊕ 𝑐1(𝑐2 ⊕ 𝑐3̅)) = = 𝑐3 ⊕ 𝑐1 ⊕ 𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐1(𝑐2 ⊕ 𝑐3̅) = 1 ⊕ 𝑐2 ⊕ 𝑐1(𝑐2 ⊕ 𝑐3) = = 1 ⊕ 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3 , (7) 𝑐2 ′ = 𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐3 ′ = 𝑐2 ⊕ 𝑐3̅ ⊕ 1 ⊕ 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3 = 𝑐1𝑐2 ⊕ 𝑐1̅𝑐3 , 𝑐1 ′ = 𝑐1. equations (7) may be summarized as follows: c1 = 0 c1 = 1 c2’ 𝑐3 𝑐2 c3’ 𝑐2̅ 𝑐3̅ in words: if c1 = 0 then c2 will be complemented and swapped with c3, whereas if c1 = 1 there will be no swapping, but c3 will be complemented. fig. 12 shows an equivalent nct circuit for the modified fredkin gate of fig. 11. fig. 12 equivalent (more complex) nct circuit for the gate of fig. 11 two equivalent variations are shown in fig. 13, with a different distribution of the white dots/triangle. fig. 13 equivalent variations of the or-fredkin gate the functionality of the building block at the left of fig. 13 is given by: 𝑐3 ′ = 𝑐3 ⊕ 𝑐1 ∨ (𝑐2 ⊕ 𝑐3) = 𝑐1 ⊕ 𝑐2 ⊕ 𝑐1𝑐2 ⊕ 𝑐1𝑐3 = 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3̅ , 𝑐2 ′ = 𝑐2 ⊕ 𝑐3 ⊕ 𝑐3 ′ ⊕ 1 = 𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3̅ = 𝑐1𝑐2 ⊕ 𝑐1̅𝑐3̅ , (8) 𝑐1 ′ = 𝑐1. 260 c. moraga, f. z. hadjam equations (8) may be summarized as follows: c1 = 0 c1 = 1 c2’ 𝑐3̅ 𝑐2 c3’ 𝑐2 𝑐3̅ in words: c3 will be complemented and if c1 = 0 then it will be swapped with c2. if c1 = 1 then no swapping takes place. it is simple to show that the circuit shown at the right of fig. 13 has the same functionality. an nct circuit equivalent to the variation, is shown in fig. 14. it may be seen that its quantum cost [22], [27] and depth is higher by 1 with respect to the variations in fig. 13. fig. 14 equivalent nct circuit of the or-fredkin variation of fig. 13 another variation is possible, with both bottom dots white, as shown in fig. 15. fig. 15 another orfredkin variation the functionality of the building block of fig. 15 is given by: 𝑐3 ′ = 𝑐3 ⊕ 𝑐1 ∨ (𝑐2 ⊕ 𝑐3̅) = 𝑐3 ⊕ 𝑐1 ⊕ (𝑐2 ⊕ 𝑐3̅) ⊕ 𝑐1(𝑐2 ⊕ 𝑐3̅) = = 1 ⊕ 𝑐1 ⊕ 𝑐2 ⊕ 𝑐1𝑐2 ⊕ 𝑐1𝑐3̅ = 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3 ⊕ 1 = 𝑐1̅𝑐2̅ ⊕ 𝑐1𝑐3̅ , (9) 𝑐2 ′ = (𝑐2 ⊕ 𝑐3̅) ⊕ 𝑐3 ′ ⊕ 1 = 𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐1̅𝑐2 ⊕ 𝑐1𝑐3 = = 𝑐1𝑐2 ⊕ 𝑐1̅𝑐3 ⊕ 1 = 𝑐1𝑐2̅ ⊕ = 𝑐1̅𝑐3̅ , 𝑐1 ′ = 𝑐1 . equations (9) may be summarized as follows: c1 = 0 c1 = 1 c2’ 𝑐3̅ 𝑐2̅ c3’ 𝑐2̅ 𝑐3̅ in words: if c1 = 0 then 𝑐2 and 𝑐3 will be complemented and swapped, whereas if 𝑐1 = 1, 𝑐2 and 𝑐3 will be just complemented. equivalent circuits not using or-fredkin variations are shown in fig. 16. it is easy to see that these equivalent nct circuits are more complex than the or-fredkin variation. the fredkin gate in reversible and quantum environments 261 fig. 16 equivalent nct circuits for the or-fredkin variation of fig. 15 another variation is shown in fig. 17, where in analogy to the white dot, a white triangle is introduced, meaning that the corresponding control signal will be complemented before calculating the disjunction. fig. 17 a mixed-polarity or-fredkin variation the functionality of the building block of fig. 17 is given by: 𝑐3 ′ = 𝑐3 ⊕ (𝑐1 ∨ (𝑐3 ⊕ 𝑐2 ⊕ 1)) = 𝑐3 ⊕ 𝑐1 ⊕ 𝑐3 ⊕ 𝑐2̅ ⊕ 𝑐1(𝑐3̅ ⊕ 𝑐2) = 𝑐1(𝑐3̅ ⊕ 𝑐2̅) ⊕ 𝑐2̅ = 𝑐1𝑐3̅ ⊕ 𝑐1̅𝑐2̅ , (10) 𝑐2 ′ = 𝑐2 ⊕ 𝑐3 ⊕ 𝑐3 ′ = 𝑐2 ⊕ 𝑐3 ⊕ 𝑐1𝑐3̅ ⊕ 𝑐1̅𝑐2̅ = 𝑐1̅𝑐3̅ ⊕ 𝑐1𝑐2̅ , 𝑐1 ′ = 𝑐1 . equations (10) may be summarized as follows: c1 = 0 c1 = 1 c2’ 𝑐3̅ 𝑐2̅ c3’ 𝑐2̅ 𝑐3̅ it becomes apparent that equations (9) and (10) are equal. this means that the corresponding or-fredkin variations are equivalent. moreover, it may be noticed that the distribution of “white elements” in these variations is the same as the distribution of white dots shown in fig. 4 for variations of the classical fredkin gate. an additional or-fredkin variation is shown in fig. 18. fig. 18 or-fredkin variation the functionality of the circuit is: 𝑐3 ′ = 𝑐3 ⊕ (𝑐1 ∨ (𝑐2 ⊕ 𝑐3̅)) = 𝑐3 ⊕ 𝑐1 ⊕ 𝑐2 ⊕ 𝑐3̅ ⊕ 𝑐1(𝑐2 ⊕ 𝑐3̅) = = 1 ⊕ 𝑐1 ⊕ 𝑐2 ⊕ 𝑐1𝑐2 ⊕ 𝑐1𝑐3̅ = 𝑐1𝑐3 ⊕ 𝑐1̅𝑐2 ⊕ 1 , (11) 𝑐2 ′ = 𝑐2 ⊕ 𝑐3 ⊕ 𝑐3 ′ ⊕ 1 = 𝑐2 ⊕ 𝑐3 ⊕ 𝑐1𝑐3 ⊕ 𝑐1̅𝑐2 = 𝑐1𝑐2 ⊕ 𝑐1̅𝑐3 , 𝑐1 ′ = 𝑐1 . 262 c. moraga, f. z. hadjam equations (11) may be summarized as follows: c1 = 0 c1 = 1 c2’ 𝑐3 𝑐2 c3’ 𝑐2̅ 𝑐3̅ it may be seen, that eqs. (7) and (11) are equal. therefore, the corresponding fredkin variations are equivalent. they have the same distribution of white elements as the variations shown in fig. 8. the comparison is shown in fig. 19. fig. 19 pairs of equivalent fredkin variations 3. the quantum domain in the domain of circuits for quantum computing, the fredkin gate is not known under this name, but as “controlled swap”, possibly because in the case of quantum circuits there is a very simple symbol for the swap of two “qubits” (= quantum bits). (see fig. 19). without knowing whether in some “quantum technology” the controlled swap is also realized as in the reversible domain, i.e. cnot-toffoli-cnot, no variations as presented in the former section will be discussed. however, some changes in the surroundings of the controlled swap may be considered. a relevant example of an effective use of the controlled swap was introduced in [3] to efficiently determine whether two qubits are equal or have an inner product with absolute value ≥  a threshold in [0, 1]. (see fig. 20). a detailed analysis follows. in the dirac notation [16], let |0〉 and |1〉 be the basis states of the working hilbert space [16]. let |〉 denote the state of a control qubit and let h denote the hadamard gate 𝟏 √𝟐 [ 𝟏 𝟏 𝟏 −𝟏 ]. if |〉 = |0〉 = [ 1 0 ]t (in the vector notation), then : 𝑯|0〉 = 𝟏 √𝟐 [1 1 1 −1 ].[ 1 0 ] = 𝟏 √𝟐 [ 1 1 ] = 𝟏 √𝟐 (|0⟩ + |1⟩). (12) this represents a superposition of states and a quantum circuit will work in both states simultaneously, which is one of the main characteristics of circuits for quantum computing. fig. 20 circuit to compare two qubits, in the dotted box, the symbol for the controlled swap the fredkin gate in reversible and quantum environments 263 at the output side the circuit of fig. 20, produces (h ⊗ i4)(c swap)(h ⊗ i4) |0〉|〉〉 , (13) where i4 represents the 4⨯4 identity matrix. lemma 1: the output of the circuit of fig. 20 is given by: (1/2)[ |0〉(|〉〉 + 〉|〉) + |1〉(|〉〉 – 〉|〉) ]. (14) proof: considering the most general case, let |〉 = (0〉 + |1〉), with ||2 + ||2 = 1 and 〉 = (0〉 + |1〉), with |2 + |2 = 1. recall that swap = [ 1 0 0 0 0 0 1 0 0 1 0 0 0 0 0 1 ] and let q = (h ⊗ i4)(c swap)(h ⊗ i4). let s stand for swap. then q = 1 √2 [ i4 i4 i4 −i4 ] ⋅ [ i4 04 04 s ] ⋅ 1 √2 [ i4 i4 i4 −i4 ] = 1 2 [ i4 s i4 −s ] ⋅ [ i4 i4 i4 −i4 ] = = 1 2 [ i4 + s i4 − s i4 − s i4 + s ]. (15) moreover, |〉〉 = [ ]t ⊗ [ ]t = [     () 〉|〉 = [ ]t ⊗ [ ]t = [     () therefore, |〉〉 + 〉|〉 = = [( + ) (  + ) (  + ) (  + ) (18) |〉〉 – 〉|〉 = = [( – ) (  – ) (  – ) (  – ) (19) since  and  are possibly complex values, the products  and  are commutative. therefore, the first and last components of the vector in (18) equal 2 and 2 respectively, and the first and last components of the vector in (19) equal 0. therefore, |〉〉 + 〉|〉 = [(2 ) (  + ) (  + ) () (20) |〉〉 – 〉|〉 = [ 0 (  – ) (  – )   (21) to calculate q |0〉|〉〉 the explicit expression for (15) will be needed, where “t” will be used to represent –1 and preserve the format of the matrix. 264 c. moraga, f. z. hadjam q |0〉|〉〉 = 1 2 [ 2 0 0 1 0 0 1 0 0 1 0 0 1 0 0 2 0 0 0 1 0 0 𝐓 0 0 𝐓 0 0 1 0 0 0 0 0 0 1 0 0 𝐓 0 0 𝐓 0 0 1 0 0 0 2 0 0 1 0 0 1 0 0 1 0 0 1 0 0 2] ⋅ [ 𝛼1𝛼2 𝛼1𝛽2 𝛽 1 𝛼2 𝛽 1 𝛽 2 0 0 0 0 ] = 1 2 [ 2𝛼1𝛼2 𝛼1𝛽2 + 𝛽1𝛼2 𝛼1𝛽2 + 𝛽1𝛼2 2𝛽1𝛽2 0 𝛼1𝛽2 − 𝛽1𝛼2 −𝛼1𝛽2 + 𝛽1𝛼2 0 ] . (22) the resulting vector in (22) may be additively divided into two vectors as follows: 1 2 [ 2𝛼1𝛼2 𝛼1𝛽2 + 𝛽1𝛼2 𝛼1𝛽2 + 𝛽1𝛼2 2𝛽1𝛽2 0 𝛼1𝛽2 − 𝛽1𝛼2 −𝛼1𝛽2 + 𝛽1𝛼2 0 ] = 1 2 ( [ 2𝛼1𝛼2 𝛼1𝛽2 + 𝛽 1 𝛼2 𝛼1𝛽2 + 𝛽 1 𝛼2 2𝛽 1 𝛽 2 0 0 0 0 ] + [ 0 0 0 0 0 𝛼1𝛽2 − 𝛽 1 𝛼2 −𝛼1𝛽2 + 𝛽 1 𝛼2 0 ] ) . (23) from eq. (21), with (18.b) and (19.b) follows that the first vector of (21) equals (1/2)|0〉( |〉〉 + 〉|〉 ) and the second vector of (21) equals n(1/2)|1〉( |〉〉 – 〉|〉 ). this ends the proof that q |0〉|〉〉 = (1/2)[ |0〉(|〉〉 + 〉|〉) + |1〉(|〉〉 – 〉|〉) ] . □ notice that if (|〉 = 〉) then (|〉〉 = 〉|〉) and (|〉〉 – 〉|〉) = 0. this means that in this case, |1〉 would be measured with probability 0, whereas |0〉 would be measured with a non-zero probability. the equality of two state vectors may be obtained in one step, whereas a classical algorithm would require two comparisons. a possible “variation” may consider |〉 = |1〉 = [ 0 1 ]t (in the vector notation), then 𝑯|1〉 = 𝟏 √𝟐 [1 1 1 −1 ].[ 0 1 ] = 𝟏 √𝟐 [ 1 −1 ] = 𝟏 √𝟐 (|0⟩ − |1⟩). (24) lemma 2: if in the circuit of fig. 20 |〉 is set to |1〉, then q|1〉|〉〉 = (1/2)[(|0〉(|〉〉 – 〉|〉) + |1〉(|〉〉 + 〉|〉)]. proof: at the output side the circuit with |〉 = |1〉 now gives (h ⊗ i4)(c swap)(h ⊗ i4) |1〉|〉〉 = q|1〉|〉〉 = = q([ 0 1]t ⊗ [     ) = the fredkin gate in reversible and quantum environments 265 = 1 2 [ 2 0 0 1 0 0 1 0 0 1 0 0 1 0 0 2 0 0 0 1 0 0 t 0 0 t 0 0 1 0 0 0 0 0 0 1 0 0 t 0 0 t 0 0 1 0 0 0 2 0 0 1 0 0 1 0 0 1 0 0 1 0 0 2] ⋅ [ 0 0 0 0 𝛼1𝛼2 𝛼1𝛽2 𝛽 1 𝛼2 𝛽 1 𝛽 2] = 1 2 [ 0 𝛼1𝛽2 − 𝛽1𝛼2 −𝛼1𝛽2 + 𝛽1𝛼2 0 2𝛼1𝛼2 𝛼1𝛽2 + 𝛽1𝛼2 𝛼1𝛽2 + 𝛽1𝛼2 2𝛽1𝛽2 ] . (25) as in the former case, (recall eq. (23)), the final vector of eq. (25) may be split into two components associated to |0〉 and |1〉 respectively, leading to: q|1〉|〉〉 = (1/2)[(|0〉(|〉〉 – 〉|〉) + |1〉(|〉〉 + 〉|〉)] . (26) in this case, if |〉 = 〉, |0〉 would be measured with probability 0. a (pseudo) variation may be introduced if a signal, not the controlled swap, is modified. recall that the pauli x matrix [18] equals [ 0 1 1 0 ] and behaves as a quantum inverter. it is fairly obvious that if pauli x gates are included, as shown in fig. (21), then the complement of |〉 will be compared with 〉, which is equivalent to compare |〉 with the complement of 〉. fig. 21. modified swap test circuit to compare one state with the complement of another. the modified swap test may be expressed as: (h ⊗ x ⊗ i2)(c swap)(h ⊗ x ⊗ i2) |0〉|〉〉. (27) the proof of effectiveness, i.e. measuring 〉 with probability 0, follows the same steps as in the former first case. 4. conclusions variations on the fredkin gate, based on mixed polarity, have been analyzed in the reversible domain. the or-fredkin gate is introduced and in all shown variation cases their circuits showed a lower complexity (quantum cost [22], [27], i.e. number of elementary gates on two qubits in the quantum model, and depth) than equivalent classical nct circuits. a wide range of functionalities of the fredkin gate under mixed polarity were shown, thus adding flexibility to the design of reversible circuits. some equivalent variations were found and associated patterns of distribution of the white elements could be detected. in the quantum domain an application of the controlled swap to efficiently test whether two states are equivalent was given a step by step calculation of behaviour and one possible extension of the test circuit was shown. • 266 c. moraga, f. z. hadjam references [1] a. barenco, c. h. bennett, r. cleve, d. p. di vincenzo, n. margolus, p. shor, t. sleator, j. a. = smolin, and h. weinfurter, "elementary gates for quantum computation", phys. rev. a, vol. 52, pp. 3457-3467, 1995. [2] c. bennett, "logical reversibility of computation", ibm j. res. develop., vol. 17, pp. 525-532, 1973. [3] h. buhrman, r. cleve, j. watrous and r. de wolf, "quantum fingerprinting", phys. rev. lett., vol. 87, no. 16, p. 167902-1-4, 2001. [4] c. s. cheng and a. k. singh, "heuristic synthesis of reversible logic – a comparative study", theoretical appl. electr. eng., vol. 12, no. 3, pp. 210-225, 2014. [5] o. dovhamuk and v. deibuk, “cmos simulation of mixed-polarity generalized fredkin gates", in proceedings of the 12th international conference on advanced computer information technologies (acit), ieee press, 2022. [6] e. fredkin and t. toffoli, "conservative logic", int. jr. theor. phys., vol. 21, no. 3/4, pp. 219-253, 1982. [7] f. z. hadjam and c. moraga, "rimep2. evolutionary design of reversible digital circuits", acm j. emerg. technol. comput. syst., vol. 11, no. 3, pp. 27:1-27:23, 2014. [8] f. z. hadjam and c. moraga, "a hierarchical distributed linear evolutionary system for the synthesis of 4-bit reversible circuits" in r. seising and h. allende-cid (eds.), studies in fuzziness and soft computing 349, pp. 233249. springer, 2017. [9] r. landauer, "irreversibility and heat generation in the computing process" ibm j. res. develop., vol. 5, pp. 183191, 1961. [10] m. lukac, m. a. perkowski, h. goi, m. pivtoraiko, ch. h. yu, k. chung, h. jeech, b.-g. kim and y. d. kim, "evolutionary approach to quantum and reversible circuits synthesis", artif. intell. rev., vol. 20, no. 3-4, pp. 361-417, 2003. [11] d. maslov, g. w. dueck and d. m. miller, "synthesis of fredkin-toffoli reversible networks", ieee trans. very large scale integ. (vlsi) syst., vol. 13, no. 6, pp. 765-769, 2005. [12] m. d. miller and g. w. dueck, "search-based transformation synthesis for 3-valued reversible circuits" in i. lanese, and m. rawski (eds.), reversible computation, lncs 12227, 218-236, springer, 2020. [13] c. moraga, "hybrid gf(2)-boolean expressions for quantum computing circuits", in a. de vos and r. wille (eds.), rc 2011, lncs 7165, pp. 54-63, springer, 2012. [14] c. moraga, "using negated control signals in quantum computing circuits", fu elec. energ., vol. 24, no. 3, pp. 423-435, 2011. [15] c. moraga, "or-toffoli and or-peres reversible gates", in s. yamashita and t. yokoyama (eds.) reversible computation, lncs 12805, pp. 266-273, springer, 2021. [16] m. nielsen and i. chuang, quantum computation and quantum information. cambridge univ. press, uk, 2000. [17] ph. niemann, l. müller and r. drechsler, "finding optimal implementations of non-native cnot gates using sat", in s. yamashita, t. yokoyama, (eds.), reversible computation, lncs 12805, pp. 242-255, springer, 2021. [18] w. pauli, handbuch der physik, chapter 24, springer, berlin, 1933. [19] m. rahman and g. w. dueck, "an algorithm to find quantum templates" in proceedings of the ieee congress on evolutionary computing, ieee press, 2012, pp. 623-629. [20] i. rahul, b. loff and i. c. oliveira, "np-hardness of circuit minimization for multi-output functions", in proceedings of the 35th computational complexity conference (ccc), 2020, pp. 22:1–22:36. [21] m. saeedi and i. l. markov, "synthesis and optimization of reversible circuits – a survey", acm comput. surveys, vol. 45, no. 2, pp. 1-34, 2013. [22] z. sasanian and d. m. miller, "ncv realization of mct gates with mixed control", in proceedings of the ieee pacific rim conference on communications, computers and signal processing (pacrim), 2011, pp. 567-571. [23] m. soeken and m. k. thomsen, "white dots do matter: rewriting reversible logic circuits", in g. w. dueck and d. m. miller (eds.), reversible computation, lncs 7948, pp. 196-208, springer, 2013. [24] m. soeken, g. w. dueck and m. d. miller, "a fast symbolic transformation-based algorithm for reversible logic synthesis", in s. devitt and i. lanese i. (eds.), reversible computation, lncs 9720, pp. 307-321, springer, 2016. [25] s. stojković, m. m. stanković and c. moraga, "complexity reduction of toffoli networks based on fdd", fu: elec. energ., vol. 28, no. 2, pp. 251-262, 2015. [26] t. toffoli, "reversible computing", in j. w. baker and j. van leeuwen (eds.), alp 1980, lncs 84, pp. 632644, springer, 1980. [27] r. wille, m. saeedi and r. drechsler, "synthesis of reversible functions beyond gate count and quantum cost", 2010, pp. 1-7. [28] a. zulehner and r. wille, "simulation and design of quantum circuits", in i. ulidowski, i. lanese, u. p. schulz and c. ferreira, (eds.), reversible computation: extending horizons of computing, lncs 12070, pp. 60-82, springer open, 2020. facta universitatis series: electronics and energetics vol. 34, no 3, september 2021, pp. 367-380 https://doi.org/10.2298/fuee2103367j © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper mems resonator mass loading noise model: the case of bimodal adsorbing surface and finite adsorbate amount ivana jokić1, olga jakšić1, miloš frantlović1, zoran jakšić1, koushik guha2 1university of belgrade, institute of chemistry, technology and metallurgy – national institute of the republic of serbia, center of microelectronic technologies, belgrade, serbia 2national mems design centre, department of electronics and communication engineering, national institute of technology, silchar, assam – 788010, india abstract. modeling of adsorption and desorption in microelectromechanical systems (mems) generally is crucial for their optimization and control, whether it is necessary to decrease the adsorption-desorption influence (thus ensuring stable operation of ultra-precise micro and nanoresonators) or to increase it (and enhancing in this manner the sensitivity of chemical and biological resonant sensors). in this work we derive and use analytical mathematical expressions to model stochastic fluctuations of the mass adsorbed on the mems resonator (mass loading noise). we consider the case where the resonator surface incorporates two different types of binding sites and where non-negligible depletion of the adsorbate occurs in a closed resonator chamber. we arrive at a novel expression for the power spectral density of mass loading noise in resonators and prove the necessity of its application in cases when resonators are exposed to low adsorbate concentrations. we use the novel approach presented here to calculate the resonator performance. in this way we ensure optimization of these mems devices and consequentially abatement of adsorption-desorption noise-caused degradation of their operation, both in the case of micro/nanoresonators and resonant sensors. this work is intended for a general use in the design, development and optimization of different mems systems based on mechanical resonators, ranging from the rf components to chemical and biological sensors. key words: adsorption, mass loading noise, langevin equation, power spectral density, resonator received march 15, 2021; received in revised form july 07, 2021 corresponding author: ivana jokić university of belgrade, institute of chemistry, technology and metallurgy – national institute of the republic of serbia, center of microelectronic technologies, 11000 belgrade, serbia e-mail: ijokic@nanosys.ihtm.bg.ac.rs * this paper is loosely based on the authors’ invited presentation from the 1st international conference on micro/nanoelectronics devices, circuits and systems (mndcs 2021), 29 31 january, 2021, in silchar, assam, india. [1] 368 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha 1. introduction compared to the conventional mechanical resonators, micromechanical resonant structures manufactured by mems (microelectromechanical system) or nems (nanoelectromechanical system) technologies have many favorable features. these include their extremely compact dimensions of the order of micrometers or nanometers, the technological compatibility – and thus vastly facilitated integration – with active electronics, low power consumption, an extended range of available resonant frequencies (even reaching the gigahertz range), high reliability and batch production with a high yield and a very low cost per unit element. this makes them convenient for applications in electronics, as frequency defining units of miniature oscillators and frequency selective circuits [1-4]. additionally, the easy adjustability of their parameters makes them promising candidates for tunable passive components, which further enables reconfigurability, a higher integration degree and miniaturization of radio-frequency circuits [3]. mems/nems resonators are also being developed for various sensing applications and represent the basic components of highly sensitive resonant sensors of mass, force, acceleration, temperature, as well as the concentration of various chemical substances and biological agents [5-8], often being based on microand nanocantilevers. smaller device dimensions lead to an increase of the surface-to-volume ratio, which boosts their sensitivity to some physical processes whose effects are negligible in larger structures. among such processes are adsorption and desorption (ad) of particles from the surrounding medium, which occur at the surface of the structure, and results in varying amounts of mass being added to the native resonator mass, thus changing the resonant frequency of the device. this process enables the operation of ad-based chemical and biological sensors, however in other resonant devices it is undesirable. the added mass randomly fluctuates due to the stochastic nature of the ad processes. in resonators, these fluctuations are known as mass loading noise or resonator ad noise [9]. they contribute to the total frequency noise of the resonator, together with other noise sources (including temperature fluctuations, outgassing, brownian motion, johnson (thermal) noise, drive power and self-heating, random vibration, flicker (1/f) noise, etc. [10-12]), and therefore degrade the performance of electronic devices and sensors of which the microresonator is an integral part. it is particularly important to analyze this kind of fundamental noise, since it allows for the optimal resonator design and optimization of the operating conditions, which consequently ensures lower noise levels and, accordingly, minimizes signal degradation in electronic circuitry and improves detection limits in sensors. based on these facts, there is a need to establish a mathematical model of particles binding-unbinding process at the resonator surface as accurately as possible, enabling the analysis of mass loading noise. numerous models of mass loading noise in microresonators, nanoresonators and other microand nanostructures applicable to different practical situations can be found in literature [9-10, 13-16]. a majority of them assumes the existence of only one type of binding sites on the adsorbing surface, so that the adsorption and desorption of one species is characterized by one pair of adsorption and desorption rate constants and most often it is described by the langmuir model. however, usually the real surfaces are not uniform, and each of them is characterized instead by different structural, morphological or chemical features, which results in a difference between its surface adsorption sites. if this is the case, the ad process is characterized by some spatial distribution of ad rate constants across the surface. the simplest type of such surfaces has two distinct kinds of adsorption binding sites, so that there mems resonator mass loading noise model 369 is a bimodal surface affinity for the particles of a given species. in that case the kinetics of ad processes and resonator noise are described by models that imply a bi-langmuir ad process [17, 18]. in certain cases it is necessary that the models of ad process and noise include some additional effects which may be of importance. one of such effects is depletion of adsorbate particles in the resonator chamber due to adsorption, which may be significant, especially at low adsorbate concentrations and for small dimensions of the resonator chamber, as described in [19]. the joint effect of the two phenomena to the ad process kinetics has been analyzed in [20], while a model of the dynamics of the equilibrium fluctuations, ad noise in frequency domain, has not been established yet for such a case. here we present a new mathematical model of mass loading noise, which is more comprehensive than the other mass loading noise models previously published in the literature, since it simultaneously takes into account the bimodal surface affinity and the decrease of the analyte concentration in a chamber containing the resonator, caused by particles adsorption-desorption processes and the finite dimensions of the chamber. in this way, the model can closely approximate the conditions that exist in practice when resonators are exposed to low adsorbate concentrations. 2. mass loading noise modeling a bimodal adsorbing surface (illustrated in fig. 1) implies the existence of two types of binding sites, which differ in their affinity for binding adsorbate particles from the ambient. the adsorption-desorption of adsorbate particles on such a surface is characterized by two pairs of adsorption and desorption rate constants, (kfv1, kr1) and (kfv2, kr2), corresponding to the sites of type 1 and 2, respectively. if na1 and na2 are the numbers of binding sites of the two types on the resonator surface, and n0t is the number of particles in the resonator chamber at the moment t, the time evolution of the numbers of particles adsorbed at the sites of the first, n1, and of the second type, n2, is determined by the equations 111101 1 )( d d nknnnk t n ratfv −−= (1) 222202 2 )( d d nknnnk t n ratfv −−= (2) it is assumed here that only one adsorbate particle can be bound to a single site of any kind, and that adsorbate particles do not interact among themselves. in a closed chamber, n0t is changing over time due to the ad process, and it equals n0t = n0 – n1 – n2, where n0 is the number of particles in the chamber at the moment t = 0. then, eqs. (1) and (2) constitute the system of nonlinear differential equations [20] 1111112101 1 ))(( d d danknnnnnk t n rafv −=−−−−= (3) 2222222102 2 ))(( d d danknnnnnk t n rafv −=−−−−= (4) 370 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha fig. 1 illustration of adsorption-desorption process of adsorbate particles on a bimodal surface, characterized by two types of adsorption sites (here represented as surface patches with two different shades). which is solved numerically for n1 and n2. however, if the numbers of the adsorbed particles in each moment are much smaller than the total number of adsorbate particles in the chamber n0, then n0t can be considered constant over time, thus eqs. (3) and (4) become equal to the equations of the bi-langmuir model, given by eqs. (1) and (2) in which n0t = n0. the use of the model that takes into account the adsorbate depletion in the resonator chamber during adsorption, becomes necessary with a decreasing n0. its importance for mems resonators becomes obvious since it is known that their use in frequency reference and timing applications requires low operating gas pressures inside the chamber in order to ensure higher q-factor by minimizing air damping as one of the major energy loss mechanisms [2,3]. apart from that, micromechanical resonant structures used in adsorption-based chemical and biological sensors also operate under conditions of a small number of adsorbate particles, since these sensors are intended for highly sensitive detection of ultralow analyte concentrations. in both of the given examples, it may not be valid that n0>>n1+n2, thus the finite amount of analyte and the depletion over time of the particles available for adsorption should be taken into account when performing the analysis, as predicted by eqs. (3) and (4). if m is the mass of a single adsorbate particle, and n is the total number of adsorbed particles, the total adsorbed mass on the resonator surface is )( 21 nnmmnm +== (5) the ad process on the resonator surfaces reaches the steady state after some time. then the numbers of the adsorbed particles reach the values n1e and n2e, determined by the equations obtained from eqs. (3) and (4) for dn1/dt = 0 and dn2/dt = 0 mems resonator mass loading noise model 371 3 2 1 2 1 1 2 2 1 1 2 0 1 1 1 2 1 2 0 2 0 1 1 1 1 2 0 1 ( ) [ ( )( )] [ ( ) (2 )] 0 e a a a e a a a e a k k n k n k n k k n n k n k n n k n n k n n k n n − + + − − + + − − + + + + = (6) 1 2 2 1 1 1 2 1 1( ) a e e e a e k n n n k n k n n = + − (7) here k1 = kr1/kfv1 and k2 = kr2/kfv2 are the equilibrium constants. however, even after reaching the steady state the numbers of adsorbed particles fluctuate due to the inherently random nature of the ad process. these fluctuations result in the fluctuations of the adsorbed mass, known as the mass loading noise, m. if ∆n1 and ∆n2 denote small fluctuations around the equilibrium values n1e and n2e, the numbers of the adsorbed particles in each moment are n1 = n1e + ∆n1 and n2 = n2e + ∆n2, and the fluctuations of the adsorbed mass are )( 21 nnmnmm +== (8) the linear approximation of the functions a1, a2, d1 and d2 (defined in eqs. (3) and (4)) around the equilibrium values of the adsorbed particles numbers 2 2 1 1 n n a n n a aa ii ieila    +   += , i i i ieila n n d dd    += , i=1 or i=2 (9) where all the functions and derivatives are calculated for n1 = n1e and n2 = n2e, enables linearization of eqs. (3) and (4), which yields the system of langevin equations after adding an intrinsic source function (1 and 2) to the right side of each of them ij j i i i i i ii n n a n n d n a t n +   +          −   =  d )d( , i=1 or i=2, j=1 or j=2, i  j (10) (the equalities aie = die are applied, which stem from the steady-state conditions dni/dt = 0, for i = 1 or i = 2). the previous equations may be presented in the form 1212111 1 d )d( +−−=  nmnm t n (11) 2222121 2 d )d( +−−=  nmnm t n (12) where )2()( )()2( 1220222222221 1111221101111 eeafvreafv eafveeafvr nnnnkkmnnkm nnkmnnnnkkm −−++=−= −=−−++= (13) eqs. (11) and (12) have a form suitable for the application of the langevin procedure to obtain the power spectral density (psd) of steady-state fluctuations of mass loaded on the resonator, sm(f), for the case of ad processes of two adsorbates, in the manner presented in [21]. this procedure is performed by solving eqs. (11) and (12) in the frequency domain in order to obtain the psd of the fluctuations n1 and n2, denoted as sn1(f) and sn2(f), and also their cross-spectral density, sn1n2(f). the psd of mass loading noise is then, based on eq. (8) 372 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha ))(2)()(()()( 2121 22 fsfsfsmfsmfs nnnnnm  ++== (14) (as derived e.g. in supplementary data of [15] by using the definition of the spectral density and autocorrelation function of a random variable that equals the sum of two coupled random variables). after performing all the necessary calculations the result is obtained in the form ))2(1)()2(1( )2(1 )( 2 2 22 1 2 2 3 2 ,   ff f sfs lfmm ++ + =  (15) where 1 2112 2 221122111 4)(2 −     +−++= mmmmmm (16) 1 2112 2 221122112 4)(2 −     +−−+= mmmmmm (17) 1 22 2 121111 2 212222113 ])())[(( −−+−+= erererer nkmmnkmmnknk (18) and the low-frequency magnitude is 2 3 2 2 2 1 2211 2 , )(4   ererlfm nknkms += (19) the characteristic frequencies of the psd sm(f) are fi=1/(2τi), index i is 1, 2 or 3. the psd of resonator frequency noise caused by random mass loading is [10] )( 4 )( 2 0 2 0 fs m fs mδνδ ν = , (20) where the resonator mass is m0, and ν0 is its resonant frequency. if the analyte depletion due to the adsorption is neglected, eqs. (1) and (2) become independent and linear. the overall psd of mass fluctuations is then calculated as the sum of psds of mass fluctuations of the both parts of the adsorbed amount (the part adsorbed on the type 1 sites, and the part adsorbed on the other type of sites) )()())()(()()( 2121 22 fsfsfsfsmfsmfs mlmlnlnlnlml δδδδδδ +=+== (21) (this equation stems from eq. (14) when n1 and n2 are statistically independent random variables) and the components 1 and 2 are given by the expression 2 3 0 02 2 2 0 4 / ( ) ( ) ( ) 1 (2 ) / ( ) i i i i i i i i a fv ri r fv ml nl r fv m n k k n k k n s f m s f f k k n   + = = + + , i=1 or i=2 (22) with the characteristic frequency fli=1/(2τli), where τli = kri + kfvin0 (i is 1 or 2). mems resonator mass loading noise model 373 3. results and discussions we investigate the phenomenon of mass loading fluctuations in resonant structures with bimodal surface affinity, influenced by adsorbate depletion from the finite sample during adsorption, as well as quantitatively investigate and compare the results obtained by using the model that takes into account the depletion and the one that neglects it, through the analysis which is as general as possible, i.e. not pertinent to a given micromechanical resonant structure or adsorbate. therefore, the results of mass loading noise analysis are presented in terms of psds of the fluctuations of the total number of adsorbed particles, sn(f). all the conclusions about sn(f) easily lead to conclusions about sm(f) and sν(f), having in mind the linear relation between their values (eqs. (14), (20) and (21)). the values of adsorption and desorption rate constants used in the analysis are kfv1=1.3.10-11 1/s, kr1=0.4 1/s, kfv2=1.3.10-13 1/s and kr2=0.02 1/s. they belong to the ranges corresponding to biomolecules and biosensors [22, 23], which does not affect the generality of the analysis. the presented results are pertinent to different amounts of adsorbate particles surrounding the resonator (i.e. various adsorbate concentrations or pressures in the chamber of fixed volume). among a total of na=1011 adsorption sites on a bimodal affinity surface, different shares of two types of sites are assumed. fig. 2 shows the power spectral density of fluctuations of the total number of adsorbed particles according to the model that takes into account adsorbate depletion, sn(f). it is introduced in eq. (14), and determined by eqs. (15)-(19). the same quantity obtained by using the model which assumes a constant adsorbate concentration in the resonator chamber, snl(f), given in eq. (21), is also shown. the concentration of adsorbate in the chamber of volume 1·10-7 m3 is 2.5·1019 1/m3 (which corresponds to the overall number of adsorbate molecules of 2.5.1012). the equal shares of different types of adsorption sites are assumed (v=0.5). also presented on the diagram are the components of snl(f), snl1(f) and snl2(f), that originate from independent fluctuations on the two types of adsorption sites. they are determined by eq. (22), according to the linear (i.e. bi-langmuir) model of adsorption on a bimodal adsorbing surface. a good match can be observed between the total pds values predicted by the two models. the bi-langmuir set of equations (1)–(2) models the two adsorbed fractions as independent. their contributions to the psd of fluctuations of the total number of adsorbed particles are shown by dashed and dotted lines in the diagram. however, the dynamics of fluctuations of numbers of particles adsorbed on the two types of sites is not actually independent if the adsorbate quantity is finite: although the adsorbate particles independently occupy the two sets of adsorption sites, they deplete the same pool of the free particles. in equilibrium, the surface coverage remains constant on average, but the distribution of the occupied sites continuously changes, with the dynamics determined by the rate constants. the term 'favorable sites' in the analysis refers to the adsorption sites characterized by a greater affinity for the adsorbate (expressed as the ratio of adsorption and desorption rate constants). a greater binding energy will cause the adsorbed particles to reside longer on the surface, hence their desorption rate constant will be lower and there will be less fluctuations at lower frequencies. truly, in the diagram, at lower frequencies, the fluctuations of the adsorbed fraction with lower rate constants dominate over the fluctuations of the fraction with the greater rate constants (the dashed line is above the dotted line). naturally, higher rate constants characterize greater dynamics of the process, and at higher frequencies the overall noise level is dominated by the fraction 374 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha that exhibits more frequent binding (the dotted line is above the dashed one). after specifying the low frequency noise magnitude (lfnm) and the frequencies at which the psd curve changes its slope as the characteristic parameters of the psd, it is of interest to analyze the discrepancy between the two models regarding these parameters over the range of values of concentrations and fractions of favorable sites. fig. 2 psd of the fluctuations of the number of adsorbed particles on the resonator surface (expressed in 1/hz) with bimodal affinity (for v=0.5), presented both according to the model that takes into account adsorbate depletion in the resonator chamber, and according to the model that neglects it. the psds shown by dotted and dashed lines correspond to the fluctuations of the numbers of particles adsorbed on the two types of sites, n1 and n2, for negligible depletion. the overall number of adsorbate particles is 2.5.1012. the same quantities as in fig. 2 are shown in figs. 3 a-c, but for different adsorbate concentrations: for 5 times (fig. 3a), 25 times (fig. 3b) and 50 times (fig. 3c) lower values. the smaller the concentration, the stronger the depletion of the adsorbate will be in the gas phase and consequently, the greater the discrepancies between the results obtained by the use of the linear model and by the more accurate nonlinear one. in fig. 3a, a small deviation can be observed between the psds of total fluctuations determined according to the two adsorption models. the model that includes adsorbate depletion predicts a slightly higher total noise, and a small difference can also be noticed between the characteristic frequencies of the two spectral densities. compared to the case shown in fig. 2, both models at a 5 times lower concentration predict an order of magnitude higher low-frequency noise magnitude, and lower characteristic frequencies. the characteristic frequencies are determined by the parameters τ1, τ2, τ3, τl1 and τl2, whose values are given in table 1. a further decrease of the adsorbate concentration results in a significantly higher difference between the psds obtained according to the two models, as shown in fig. 3b. mems resonator mass loading noise model 375 a) b) c) fig. 3 psd (expressed in 1/hz) of the fluctuations of the number of adsorbed particles on a bimodal affinity surface (v=0.5), according to the two adsorption models for: a) 5 times, b) 25 times, and c) 50 times lower adsorbate concentration than in fig. 2. 376 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha the lower low-frequency noise magnitude is obtained according to the model that takes into account the adsorbate depletion. a certain difference in characteristic frequencies of the spectra can also be observed. the largest difference between the magnitudes of mass loading noise calculated according to the two models can be observed at the lowest adsorbate concentration used in this analysis (fig. 3c). the difference exists at all frequencies, so the total noise according to the model that neglects the depletion is higher than that predicted by the more accurate (non-linear) model. however, the difference between the characteristic frequencies of the two spectra is negligible. table 1 psd parameter values of mass loading noise according to the two models for different values of n0, i.e. for different cases shown in figs. 2 and 3 (v=0.5). parameter fig. 2 fig. 3a fig. 3b fig. 3c n0 25.1011 5.1011 1.1011 0.5.1011 1 0.0316 0.1705 0.7422 0.9346 2 3.0042 13.1688 32.1861 37.6628 3 0.1481 0.8827 6.2486 11.4308 l1 0.0304 0.1449 0.5882 0.9524 l2 2.8986 11.7647 30.3030 37.7358 difference between the noise magnitudes negligible modest noticeable significant we have seen that the power spectral density is affected by the depletion of the adsorbate in the gas phase due to the adsorption-desorption process. now we will investigate the influence of the shares of different types of adsorption sites on the surface. figs. 4 and 5 show the power spectral density for different percentages of the favorable adsorption sites on the surface. figures 4a-c are obtained for the parameter values which are the same as for fig. 2, while figs. 4d-f are obtained for the same parameter values as fig. 3c, but for three cases: when the favorable sites dominate (v=0.8), when the unfavorable sites are dominant (v=0.2), and when the number of different sites is the same (v=0.5). figs. 4a-c show a good matching between the two models for all the values of v, at the same adsorbate concentration (2.5·1019 1/m3). therefore, figs. 4a-c correspond to the systems for which the linear model is applicable. however, figs. 4d-f, obtained for 50 times lower concentration, show a significant difference between the results according to the two models, for every v. they demonstrate that for a certain subset of the parameter space the bi-langmuir model of adsorption does not enable accurate quantification of the noise level, thus the nonlinear model must be applied. the previous analysis showed that in certain cases the linear model falsely predicts noise levels. the ratio of lfnms is shown in fig. 5. it is obtained by dividing the lfnm calculated using the linear model with the lfnm calculated by the nonlinear model. it can be observed that the difference in lfnm is greater for lower adsorbate concentrations. when the difference is significant, it increases with the higher share of the high-affinity sites. typical concentrations span over a very wide range, and consequently the discrepancy due to the neglected analyte depletion may exceed an order of magnitude. mems resonator mass loading noise model 377 fig. 4 psd of the fluctuations of the number of particles adsorbed on a bimodal affinity surface, for different percentages of the favorable adsorption sites,  ( = 0.2, 0.5, 0.8), calculated using the model that neglects depletion and the model that takes it into account. the parameters are the same as in fig. 2 for a-c, and the same as in fig. 3 c for d-f. 378 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha fig. 5 the ratio of the low frequency noise magnitude (lfnm) calculated by the linear model and the lfnm obtained according to the model that takes into account adsorbate depletion, over the range of adsorbate concentrations and fractions of favorable adsorption sites on the surface. fig. 6 time constants calculated by the linear and nonlinear model over a span of adsorbate concentrations and fractions of favorable adsorption sites on the surface. wide ribbons correspond to τl1 (lower ribbon) and τl2 (upper ribbon) from the linear model, narrow ribbons correspond to τ1 (lower ribbon) and τ2 (upper ribbon) from the nonlinear model, while symbols correspond to τ3 from the nonlinear model. the time constants are calculated for 20%, 40%, 60% and 80% fractions of the favorable sites. fig. 6 shows the time constants τ1, τ2, τ3, τl1 and τl2, which determine the characteristic frequencies of the power spectra according to the two models. the difference between the corresponding characteristic frequencies (i.e. between the time constants τ1 and τl1, and also between τ2 and τl2) increases with the decrease of the concentration, but the parameter v also influences the relation between them. the domination of adsorption sites where molecules mems resonator mass loading noise model 379 bind with lower rate constants (the low percentage of the favorable sites in fig. 6), does not ensure lower discrepancies between the time constants obtained by the linear and the nonlinear model at low concentrations. depending on both the concentration and the value of v, the characteristic frequencies according to the nonlinear model can be higher or lower than the corresponding frequencies predicted by the linear model. however, in the whole examined parameter space they are of the same order of magnitude. 4. conclusion we presented the results of the stochastic analysis of adsorption-desorption (ad) processes on a micromechanical resonator surface with a bimodal affinity. it is assumed that a resonator operates in an ambient containing a finite and low amount of adsorbate, so there is a significant change of adsorbate concentration in the resonator chamber during adsorption. such conditions are met e.g. in resonators used in frequency reference and clocking applications, as well as in resonant micromechanical sensors of various physical parameters, chemical substances or biological agents. the expressions for the power spectral density (psd) of fluctuations of the number of adsorbed particles are derived by taking into account the adsorbate depletion in the resonator chamber, and also when the depletion is neglected. they yielded the corresponding expressions for the psds of mass loading noise, and also for the psds of resonator frequency noise. the analysis was performed by using the computer simulations, based on the two presented noise models. it revealed the change of the discrepancies between the two models in low-frequency noise magnitudes and characteristic frequencies of the noise spectra as the adsorbate amount decreases, and also with the change of the shares of different types of adsorption sites on the resonator surface. all the results and conclusions stemming from the analysis expand the knowledge about the mass loading noise of resonators operating in a closed chamber. our results are useful for the estimation of the resonator mass loading noise and the corresponding frequency noise. additionally, the development of noise models leads to a better understanding of the influence of the resonator parameters and their operating conditions, enabling their optimized design and application, and thus ensuring lower noise levels, minimization of signal degradation in electronic circuits, and improved detection limits in sensors. the described approach is generally applicable to micro/nanoelectromechanical systems with bimodal affinity surfaces, since each real structure will be exposed to some kind of ambient, and thus to adsorption and desorption of the species present therein. this will be the cause of mass loading effects, including stochastic frequency fluctuations in resonators. the presented results are pertinent to surfaces with bimodal affinity towards adsorbate particles. however, the described procedure is applicable with simple modifications to the more general case of adsorption on surfaces with multimodal affinity. hence, our future research will include stochastic analysis of ad processes on surfaces with multimodal affinity towards the adsorbate in trace amounts, with special concern on the interplay between the analyte concentration, the fraction of adsorption sites with different affinities, and the level of influence of the analyte depletion caused by adsorption. acknowledgement: this research was financially supported by the ministry of education, science and technological development of the republic of serbia, grant number 451-03-9/2021-14/200026. 380 i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha references [1] i. jokić, m. frantlović, o. jakšić, z. jakšić, k. guha, “mass loading noise in micromechanical resonators: a model considering bimodal surface affinity and adsorbate depletion in the resonator chamber”, 1st international conference on micro/nanoelectronics devices, circuits and systems (mndcs 2021), 29 31 january, 2021, silchar, assam, india. [2] g. wu, j. xu, e.j. ng, w. chen, “mems resonators for frequency reference and timing applications”, j. microelectromech. sys. vol. 29, pp. 1137–1166, september 2020. [3] i. jokić, m. frantlović, z. djurić, m.l. dukić, “rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise”, fu elec. energ., vol. 28, pp. 345–381, 2015. [4] k. guha, h. dutta, j. sateesh, s. baishya, k. s. rao, “design and analysis of perforated mems resonator”, micros. technol., vol. 27, pp. 613–617, november 2021. [5] t. kose, k. azgin t. akin, “design and fabrication of a high performance resonant mems temperature sensor”, j. micromech. microeng., vol. 26, pp. 045012, march 2016. [6] s. x. p. su, h. s. yang, a. m. agogino, “a resonant accelerometer with two-stage microleverage mechanisms fabricated by soi-mems technology”, ieee sensors j., vol. 5, pp. 1214–1223, november 2005. [7] r. g. azevedo, d. g. jones, a. v. jog, b. jamshidi, d. r. myers, l. chen, x-a. fu, m. mehregany, m. b. j. wijesundara, a. p. pisano, “a sic mems resonant strain sensor for harsh environment applications”, ieee sensors j., vol. 7, pp. 568–576, march 2007. [8] f. m. battiston, j-p. ramseyer, h. p. lang, m. k. baller, c. gerber, j. k. gimzewski, e. meyer, h-j. güntherodt, “a chemical sensor based on a microfabricated cantilever array with simultaneous resonance-frequency and bending readout”. sens. act. b, vol. 77 pp. 122–131, june 2001. [9] z. djurić, o. jakšić, d. randjelović, “adsorption-desorption noise in micromechanical resonant structures”, sens. act. a, vol. 96, pp. 244–251, february 2002. [10] j.r. vig, “noise in microelectromechanical system resonators”, ieee trans. ultrason., ferroel. freq. contr., vol. 46, pp. 1558–1565, november 1999. [11] z. djurić, “mechanisms of noise sources in microelectromechanical systems”, microel. reliab., vol. 40, pp. 919–932, may 2000. [12] y. nie, h. zhan, z. zheng, a. bo, e. pickering, y. gu, “how gaseous environment influences a carbon nanotube-based mechanical resonator”, j. phys. chem. c, vol. 123, pp. 25925–25933, october 2019. [13] c mathai, sa bhave, s tallur, “modeling the colors of phase noise in optomechanical oscillators”, osa continuum, vol. 2, pp. 2253–2259, july 2019. [14] z. djurić, i. jokić, m. frantlović, o. jakšić, “fluctuations of the number of particles and mass adsorbed on the sensor surface surrounded by a mixture of an arbitrary number of gases”, sens. act. b, vol. 127, pp. 625–631, november 2007. [15] m. frantlović, i. jokić, z. djurić, k. radulović, “analysis of the competitive adsorption and mass transfer influence on equilibrium mass fluctuations in affinity-based biosensors”, sens. act. b, vol. 189, pp. 71–79, december 2013. [16] o. jakšić, z. jakšić, ž. čupić, d. randjelović, l. kolar-anić, “fluctuations in transient response of adsorption-based plasmonic sensors”, sens. act. b, vol. 190, pp. 419–428, january 2014. [17] i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha, “influence of sensing surface bimodal affinity on biosensor steady-state response”, in proceedings of the 9th internat. conf. on defensive technologies oteh, belgrade, pp. 106.1–4, october 2020. [18] t. contaret, j.-l. seguin, p. menini, k. aguir, “physical-based characterization of noise responses in metal-oxide gas sensors”, ieee sensors j., vol. 13, pp. 980–986, nov. 2013. [19] i. jokić, o. jakšić, “a second-order nonlinear model of monolayer adsorption in refractometric chemical sensors and biosensors case of equilibrium fluctuations”, opt. quant. electron., vol. 48, pp. 1–7, june 2016. [20] i. jokić, o. jakšić, m. frantlović, z. jakšić, k. guha, k.s. rao, “temporal response of biochemical and biological sensors with bimodal surface adsorption from a finite sample”, microsys. technol., october 2020. [21] z. djurić, i. jokić, m. frantlović, o. jakšić, d. vasiljević-radović, “adsorbed mass and resonant frequency fluctuations of a microcantilever caused by adsorption and desorption of particles of two gases”, in proceedings of the 24th internat. conf. on microel. miel, vol. 1, pp. 197–199. niš, serbia, may 2004. [22] g. canziani, w. zhang, d. cines, a. rux, s. willis, g. cohen, r. eisenberg, i. chaiken, “exploring biomolecular recognition using optical biosensors”, methods, vol. 19, pp. 253–269, may 1999. [23] d.g. myszka, x. he, m. dembo, t.a. morton, b. goldstein, “extending the range of rate constants available from biacore: interpreting mass transport-influenced binding data”, biophys. j., vol. 75, pp. 583–594, august 1998. 10963 facta universitatis series: electronics and energetics vol. 36, no 2, june 2023, pp. 189-208 https://doi.org/10.2298/fuee2302189d © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design and implementation of fractional-order controller in delta domain sujay kumar dolai1, arindam mondal2, prasanta sarkar3 1department of electrical engineering, dit, kolkata, west bengal, india 2department of electrical engineering, dr. bc roy engineering college, durgapur, west bengal, india 3department of electrical engineering, nitttr kolkata, west bengal, india abstract. in this work, a fractional-order controller (foc) is designed in a discrete domain using delta operator parameterization. foc gets rationally approximated using continued fraction expansion (cfe) in the delta domain. whenever discretization of any continuous-time system takes place, the choice of sampling time becomes the most critical parameter to get most accurate results. obtaining a higher sampling rate using conventional shift operator parameterization is not possible and delta operator parameterized discretize time system takes the advantages to circumvent the problem associated with the shift operator parameterization at a high sampling limit. in this work, a first-order plant with delay is considered to be controlled with foc, and is implemented in discrete delta domain. the plant model is designed using matlab as well as in hardware. the fractional-order controller is tuned in the continuous domain and discretized in delta domain to make the discrete delta foc. continuous time fractional order operator (s±α) is directly discretized in delta domain to get the overall foc in discrete domain. the designed controller in implemented using matlabsimulink and dspace board such that dspaceboard acts as the hardware implemented foc. the step response characteristics of the closed-loop system using delta domain foc resembles to that of the results obtained by continuous time controller. it proves that at a high sampling rate, the continuous-time result and discrete-time result are obtained hand to hand rather than the two individual cases. therefore, the analysis and design of foc parameterized with delta operator opens up a new area in the design and implementation of discrete foc, which unifies both continuous and discrete-time results. the discrete model performance characteristics are evaluated in software simulation using matlab, and results are validated through the hardware implementation using dspace. key words: continued fraction expansion, delta operator, dspace, fractional order controller received august 01, 2022; revised october 20, 2022; accepted november 04, 2022 corresponding author: sujay kumar dolai department of electrical engineering, dit, kolkata, west bengal, india e-mail: dolaisujay@gmail.com 190 s. k. dolai, a. mondal, p. sarkar 1. introduction a fractional-order system (fos) is a system having a non-integer order differentiator and integrator. nowadays fos has become a vital research arena not only in mathematics but also in the system theory and control. from the literature, most of the real-world system is inevitably fractional order [1]–[3]. since its inception in the year 1695, the mathematicians have done value addition and its utilization in control theory [4]. for the last few decades, the researchers have paid attention in modeling, analysis, simulation, solution of differential equations in fractional order domain to deliver a clear concept on fos [5]–[7]. the control engineers are nowadays using the fractional-order calculus as a background of fractional-order controllers (foc). to control the plant, the fractionalorder controller becomes very much essential tools rather than the integer-order controller, and it is evident from the literature that the performance of the fractional-order controller is better than that of the integer-order controller [8]. the electrochemical process [9], dielectric polarization [10], visco-electric materials [11], chaos electromagnetic fractional poles [12], signal processing [13] are the primary areas where the fractional order calculus has been rigorously used for the last decade. in the case of fos, the differentiator/integrator is symbolized by an irrational operator s±μ,where s is a complex quantity and known as laplace transform variable. for the value of μ = ±1 the irrational operator becomes an integer order operator s±1.the infinite dimensional irrational operator s±μ is usually converted to the rational function either in a continuous domain (s-domain) or discrete domain (z or δ domain). to implement the fractional operators in the discrete domain, the discretization of the same operator is of primary concern [14]. the most common discretization method is tustin operator-based discretization method. the comparative study between the different discretization methods in the z-domain is summarized in [14] to get the merits and demerits of each of the methods. for the realization of the fractional order operator in discrete domain, sampling rate during discretization should be at least 6-10 times the system bandwidth, as suggested by shannon. but when the sampling rate is increased to a certain extent, corresponding z-domain transfer function becomes numerically ill conditioned thereby fails to provide meaningful insights. the digital controller design in delta domain is better than the corresponding controller designed using shift operator [15]. the advantages of the delta operator parameterization are elaborated in [16], [17] particularly while the discrete 𝓏-domain results fails at high sampling rate. delta operator has proven its potential for its application in control theory [18], system identification [19] in case of fault detection and network control [20], for kalman filter-based controller design used in cyber-physical systems [21]. direct discretization from continuous time domain to delta domain can make the procedure for fo controller design smoother and methods for the same has been proposed in [22], [23]. high speed digital realization for the fractional order operator can be possible using the properties of delta operator parameterization [24]. moreover, delta operator parameterization has made it possible to understand both continuous and discrete-time systems in a unified framework. for designing the fractional order controller, there are different works of literatures (an231e04 data sheet., 2012), [25]–[27]where different realization techniques are discussed. the tuning of parameters for the controllers is a fundamental issue. several optimization techniques [28], [29] in the frequency domain [8], [30] are available. the analog realizations of fractional-order pid controllers have been proposed in [31]–[34]. design and implementation of fractional-order controller in delta domain 191 digital implementation of the foc for boost converter using shift operator parameterization has been successfully done in [33]. digital implementation of fractional-order controllers using fpga via shift operator parameterization in indirect discretization domain is presented in [35], [36]. in this paper, ds1202 dspace board is a platform where a realtime controller in the discrete delta domain is implemented. in this paper, the performance of the proposed controller is studied using both simulations and digital hardware platforms, and a comparative study is done. the significant contributions are made in this paper in manifold: in the earlier work, the fractional-order controllers are designed in different analog realization techniques. the discrete-time systems so far designed are done using shift operator parameterization, but shift operator parameterization fails to provide meaningful information at a high sampling rate. the real-time implementation of the controller in the digital domain needs a very high sampling rate to get a better result. in this work, the fo controller design for the integer-order plant with dead time is done using the delta operator parameterization and hardware realization is made using dspace. at a fast-sampling limit, the discrete domain results resemble to that of the continuous-time results providing a unified method of foc design in delta domain. a new direct discretization method for discretizing the fractional order continuous time operator into discrete delta domain is utilized to obtain the rational transfer function in delta domain for the implementation using dspace board. therefore, digital design and implementation of foc using delta operator parameterization using dspace is a newer concept and a new direction for further research. the organization of the paper is as: the basics of fractional-order system and controller are discussed in section 2. in section 3, the discretization of fractional order operators using the delta operator is described. the digital realization of the fopid controller using the delta operator is demonstrated in section 4. in section 5, the implementation of the proposed controller in simulink and dspace board is discussed. finally, section 6 & section 7 is devoted to analyzing the result analysis and conclusion, respectively. 2. fractional order system 2.1. fractional order calculus in fractional calculus, the non-integer order differentiation/integration is denoted by a fundamental operator md  , where ψ is used to specify the order of the operation like differentiation or integration. this operator is known as an integro-differentiator operator; this is mathematically represented as ( 0) 1 ( 0) ( ) ( 0) ψ ψ ψ τ τ ψ m d ψ dτ md ψ dτ ψ    = =      (1) there are two popular definitions, such as grünwald-letnikov (gl) and riemannliouville (rl) definitions, to express the integro-differentiator operator. (2) and(3) describe the gl and rl definitions, respectively. 192 s. k. dolai, a. mondal, p. sarkar gl definition: 0 0 ( ) lim ( 1) ( ) p ψ n τ p n md t p np n       − → =    = −   −     (2) rl definition: 1 1 ( ) ( ) ( ) ( ) x ψ τ x x m d p md t dp x d p  − +   =  −    −  (3) where the value of  varies from (x − 1) to x and  is used to represent the euler's gamma function. 2.2. fractional order differential equation and transfer function the fractional-order differential equation is used to describe the dynamics of a fractional-order system (fos). likewise, with the case of the classical integer order system, the laplace transform of the fractional-order differential equation generates the transfer function of the fos. the mathematical equation of a fractional-order system is described by (4). 1 0 1 0 1 0 1 0 ( ) ( ) ( ) ( ) ( ) ( ) n n m m r n n m r r m a d y t a d y t a d y t b d u t b d u t b d u t − −    − − + + + = + + + (4) where,  tdd 0 is known as rl-derivative or caputo fractional derivative. the input and the output of the system are denoted by u(t) and y(t) respectively, ai(i = 0,......,n) and bi(i = 0,......,m) are constants and i(i = 0,......,n), ri(i = 0,......,m) are arbitrary real numbers. in general, the values of iψ and rj can be considered as 01 ψ.....ψψ nn  − , and 01 r.....rr mm  − . laplace transform of (1) gives rise to a continuous-time transfer function as given by (5). { ( )} ( )ψ τl md t s s = (5) according to the definition of caputo, the fractional derivative m is taken equal to 0 , and the laplace transform ( )t is denoted by ( )s . by using the expression as derived in (6), laplace transform is applied on both sides of the (4) gives rise to the transfer function of a system with y(t) as the output and u(t) is the input. 01 01 01 01 0 )( )( )(  sasasa sbsbsb su sy sg nn mm nn rr m r m +++ +++ == − − − −   (6) where, u(s) = lu(t) and y(s) = ly(t), 2.3. fractional order pid controller (pid) the fractional order pid controller performs better than the integer-order pid controller owing to its greater number of degrees of freedom. in case of the fopid controller, the orders of the integrator and differentiator ( < 0,  > 0) are non-integer. design and implementation of fractional-order controller in delta domain 193 therefore, by using the fractional-order calculus for differentiation, integration and laplace transform, the continuous-time domain transfer function of fractional order pid controller gets the following form: ( ) ( ) ( ) , 0 ( ) c p i d u s g s k k s k s e s − = = + +    (7) where, u(s) = lu(t) and e(s) = le(t) are output and the input of the controller, respectively. the integer-order pid controller can be obtained by using  = 1 and  = 1 in (7). likewise, the pd controller can be obtained if the value of  = 0, and ki = 0. this may conclude that (7) is the generalized transfer function of integer/fractional-order controller. the basic structure of the fopid controller is given in fig. 1. fig. 1 fractional order pi d  controller 3. direct discretization of fractional order integrator and differentiator using delta operator 3.1. relationship between s-domain and  -domain the shift operator parameterization is used to describe the discrete-time system. the forward shift operator is usually denoted by q. the delta domain is an area where discrete-time systems are represented using the delta operator . the delta operator () is nothing but the scaled and shifted version of the forward shift operator (q). the operator is related with the forward shift operator q as (  is the sampling time).  − = 1q  (8) at high sampling period ( → 0), the following identity is obtained when delta operator is applied on a differentiable signal y(t): 0 ( ) ( ) lim ( ) ( ) y t y t d y t y t dt  → +  − = =  (9) the continuous-time derivative can be obtained from the delta operated signal at a fast-sampling limit as can be seen from (9). the relationship between the frequency 194 s. k. dolai, a. mondal, p. sarkar variable '' in the delta domain and the frequency variable '' z of the shift operator domain is given below:  − = 1z  (10) in (10), replacing = sez the relationship between the frequency variables in continuous time and discrete delta time is obtained and is depicted by (11).  − =  1se  , or, += 1se )1ln( 1 +  = s (11) equation (11) represents the direct relationship between the variable s and . 3.2. direct discretization of fractional order operator in delta domain for the realization of foc in delta domain, discretization of the fractional order operator (s) in delta domain plays the pivotal role. from (11), the transformation of the fractional order operator into delta domain from continuous time domain can be re-established as:         +  = )1ln( 1 s (12) by using trapezoidal quadrature rule [37] and cfe, ln (1 + x) function can be successfully approximated to its closed form is as follow: 2 2 66 36 )1ln( xx xx x ++ + =+ (13) replacing x by  in (13), (11) can be rewritten as         ++ +        +  = 22 2 66 36 )1ln( 1   s (14) from (14), it is evident that at fast sampling rate ( → 0), s   meaning, the continuous and discrete delta domain becomes replicate to each other, thereby (14) gives a direct relationship between the two domains. equation (12) can be rewritten as: 2 2 2 6 3 6 6 s          +  =   +  +   (15) rational transfer function in delta domain corresponding to any fractional order operator can be realized using (15) through the direct discretization method as demonstrated in [23] in continuous-time system representation, fractional-order differentiator (fod) and fractional-order integrator (foi)are mathematically expressed as: )10()( = rssg r d (16) )10()( = − rssg r i (17) design and implementation of fractional-order controller in delta domain 195 continued fraction expansion (cfe) [38], [39] is used as a powerful tool that operates on the generating function to get a rational transfer function. the cfe approximation is mathematically formulated using (18)[39]. .....2 )3( 5 )2( 2 )2( 3 )1( 2 )1( 1 1)1( + − + + + − + + + − + +=+ pq pq pq pq pq qp p q (18) to obtain the standard form of cfe as given in (18), p is replaced by         −         ++ + 1 66 36 22 2   to get the result obtained by cfe in (15). here, (15) is used as the generating function for the integer order approximation of the fractional-order differentiator/integrator in the delta domain as mathematically represented by (19). r del cfeg          ++ + = 22 2 66 36 )( (19) in this work, third order approximation of fod and foi are considered for the realization and implementation purpose. delta domain coefficients [23] for the third order approximation of rs are tabulated in table 1. table 1 delta-domain coefficients for third-order approximation of rs 6 5 4 3 2 3 (3 ) ( 1) (4096 26624 9472 201472 252944 331304 506955)dnum / r / r + / r + r + r r r + r +=  coefficient numerator 0h 6 3 5 2 7 4 3 (30720 454416 36096 838259 78360 4096 192000 506955) r + r r r + r r r + dnum 1h 2 3 5 6 4 3 ( 938460 1388142 723408 608640 76800 12288 12288 ) r + r + r r + r + r dnum        2h 2 2 2 2 3 2 5 2 2 4 3 ( 465120 195900 128640 15360 714105 57600 ) r r + r r + + r dnum       3h 3 2 3 4 3 3( 64320 7680 97950 )+ r + r + dnum   coefficient denominator 0i 7 6 5 4 3 2 3 (4096 30720 36096 192000 454416 78360 838259 506955) r + r + r r r + r + r + / dnum 1i 2 3 5 6 4 3 (938460 1388142 723408 608640 76800 12288 12288 ) + r + r r + r + r + r / dnum        2i 2 2 2 2 3 2 5 2 2 4 3 ( 465120 195900 128640 15360 714105 57600 ) + r + r r + r + + r / dnum       3i 3 2 3 4 3 3( 64320 7680 97950 )+ r + r + / dnum   196 s. k. dolai, a. mondal, p. sarkar from the coefficients of table 1, the 3rd order rational approximation of sr can be obtained and 3rd order generalized transfer function as given by (20). 3 22 0 1 2 3 2 2 3 2 0 1 2 3 6 3 ( ) 6 6 r r d h h h h g s i i i i              + + ++  = = =  +  +  + + +  (20) 4. digital realization of fractional-order pid controller in the delta domain the transfer function of the pid controller in continuous time is given by (7). to realize the controller transfer functions in the delta domain, fractional order operator such as s− and s are to be implemented in the delta domain using (20).the pid controller in the delta domain takes the form as 2 2 2 2 2 2 6 3 6 3 ( ) 6 6 6 6 p i dc k k k             −    +  +  = + +    +  +  +  +     (21) in this work, the proposed foc, designed in the delta domain is to control a plant, which is of a first order with time delay [33]. the plant transfer function gp(s) is modeled through the first order padé approximation to obtain (22). 1 2( ) 1 1 1 2 p pls p l sk k g s e lst st s −   −   =     + +  +    (22) considering t = 1, l = 0.1, the plant becomes 0.1 1 0.05 ( ) 1 1 1 0.05 p ps p k k s g s e s s s −   −  =     + + +   (23) the fopid controller in the continuous-time domain is tuned using particle swarm optimization (pso) [33]for the plant as given by (23) and tuned parameters of the fopid controllers are as: proportional gain(kp) = 0.7469, integral gain(ki) = 0.874, derivative gain ( ) 0.0001, 1.2089dk = = and 0603.0= the fopid in discrete delta domain takes the form as shown in (24). 1.2089 0.0603 2 2 2 2 2 2 6 3 6 3 ( ) 0.7469 0.874 0.0001 6 6 6 6 c          −    +  +  = + +    +  +  +  +     (24) 3rd order rational approximation of the controller in delta domain (sampling time is considered to be 001.0= second) is obtained using (20) and expressed by (25). 3 2 8 14 3 2 8 13 5 3 8 2 13 18 3 2 9 14 9.514 0.0006938 1.293 7.102 ( ) 0.7469 0.0009524 4.021 3.909 9.031 1.558 4.316 3.148 0.0001543 4.106 2.911 e e c e e e e e e e e               − − − − − − − − − −  − − − − = +   − − −   + + + +  + + +    (25) design and implementation of fractional-order controller in delta domain 197 4.1. realization of controller using df-ii method in this work, the delta domain fopid controller is realized using direct form ii (dfii) realization method. the foc can be realized in iir form in z-domain as follows 1 21 1 0 1 2 1 1 2 0 1 2 ( ) ( ) ( ) m m n n b b z b z b zy z f z x z a a z a z a z − − −− − − − − −    + + + + = =    + + + +    (26) the foc can be realized in iir form in  -domain as follows: 1 21 1 0 1 2 1 1 2 0 1 2 ( ) ( ) ( ) m m n n m m m my f x n n n n         − − −− − − − − −    + + + + = =    + + + +    (27) the functional diagram of the delta df-ii realization method is depicted in fig.2. corresponding to governing iir equation (27). fig. 2 delta direct form ii realization structure the unit delay block (z−1) corresponding to discrete z-domain is rebuilt in the discrete domain using (10) to realize the foc in delta domain. this can be called as delta direct form -ii(ddf-ii) realization. the unit delay block ( −1) in the -domain in represented by (28). 1 1 1(1 ) z z  − − − =  − (28) 4.1.1. delta direct form-ii realization of foi the integrator part of (25) is considered for the ddf-ii realization purpose. in fig. 3, the ddf-ii realization of integrator section is demonstrated. 198 s. k. dolai, a. mondal, p. sarkar fig. 3 delta direct form ii realization of fractional-order integrator section of fractional order controller 4.1.2. delta direct form-ii realization of fod the differentiator part of (25) is considered for the ddf-ii realization purpose. in fig. 4, the ddf-ii realization of differentiator section is demonstrated fig. 4 delta direct form ii realization of fractional-order differentiator section of fractional order controller design and implementation of fractional-order controller in delta domain 199 4.2. implementation of digital controller designed in delta domain using dspace data acquisition and control of the prototype system with a controller is accomplished using ds1202 dspacemicrolabbox, which can be reprogrammed using matlab/ simulink, and dspace software. the dspace is a software package where the real-time interface with the model-based input-output can be integrated with the simulink control desk. if any continuous system is to be controlled with a digital controller having a sampling time of , the following functional diagram as shown in fig. 5can be utilized. the interfacing of the system and the controller can be pictorially demonstrated in fig.5. to get the information from the sensor to the controller in dspace, analog to digital (adc) converter is used and digital to analog (dac) is used to send the signal back. fig. 5 real-time control structure the selection of sample time of the control program using dspace depends on the time constant of the physical system, which is again related to the dynamics of the system. the actual hardware set up for the experiment is shown in fig.6 where the plant is designed in a continuous-time domain and controller is designed in the delta domain (discrete-time domain) and implemented through the ds1202 dspace board. fig. 6. actual photograph of the experimental setup in fig. 7, analog realization of fo plant [8] controller in the continuous-time domain is shown. the parameters required to design the fo plant as shown in fig.7. is summarized in table 2. 200 s. k. dolai, a. mondal, p. sarkar table 2 component specifications for designing the fo plant elements value r1 40 k r2 10 k r3 500  c1, c2 15 nf fig. 7 analog realization of fractional order plant fig. 8 shows the digital realization of the fopid controller designed using the delta operator used to control the continuous-time plant in matlab/simulink. fig. 9 demonstrates the step response of the overall system where the fopid controller using the delta operator is designed using matlab/simulink. fig. 8 digital realization of fopid controller designed in the delta domain (kp = 0.25) design and implementation of fractional-order controller in delta domain 201 fig. 9 step response of the overall system with fopid controller designed in delta domain (kp = 0.25) fig. 10 hardware implementation of the plant of first order with time delay 202 s. k. dolai, a. mondal, p. sarkar 5. result analysis in this work, delta operator parameterization is used to design the discrete fopid controller, and the same is realized by delta direct form ii structure. the plant is considered to be one first order with time delay, is designed on a real-time basis. the designed delta fopid controller is implemented using the ds1202 dspace board, and the unit step responses of the overall system for variation of the dc gain kp are demonstrated in fig. 12 to fig. 17. fig. 12 step response characteristics of the overall system with delta fopid controller in dspace (kp = 0.25, the maximum overshoot percentage or mp (%) = 1.4 and ts (ms) =1.3) fig. 13 step response characteristics of the overall system with delta fopid controller in dspace (kp = 0.5, the maximum overshoot percentage or mp (%) = 9.28 and ts (ms) = 1.5) design and implementation of fractional-order controller in delta domain 203 fig. 14 step response characteristics of the overall system with delta fopid controller in dspace (kp = 1, the maximum overshoot percentage or mp (%) = 14.53 and ts (ms) = 1.6) fig. 15 response characteristics of the overall system with delta fopid controller in dspace (kp = 2, the maximum overshoot percentage or mp (%) = 13.59 and ts (ms) = 1.2) 204 s. k. dolai, a. mondal, p. sarkar fig. 16 step response characteristics of the overall system with delta fopid controller in dspace (kp = 4, the maximum overshoot percentage or mp (%) = 7.15 and ts (ms) = 1.14) fig. 17 step response characteristics of the overall system with delta fopid controller in dspace (kp = 8, the maximum overshoot percentage or mp (%) = 2.309 and ts (ms) = 0.96) 5.1. robustness analysis for the proposed controller to study the robustness analysis of the developed delta domain foc, the dc gain (kp) is varied and the responses of the closed loop system are measured. for the variation of dc gain (kp), the peak percentage overshoot and the settling time are measured, and variation of the percentage peak overshoot and settling times does not vary considerably for the variation of dc-gain. the iso-damping property of fractional-order system is thus satisfied through the designing of discrete foc in delta domain. a comparative analysis of the time domain parameters for variation of the dc gain (kp) has been summarized in table 3. design and implementation of fractional-order controller in delta domain 205 from the plots shown in fig. 12 to fig. 17, proves that the closed loop system with delta fopid controller realized using dspace is robust against process gain (k) variations and exhibits the iso-damping properties. 5.2 sensitivity analysis of the system a perturbation (± 20 % pu) is applied to the closed loop system containing the fractional order plant and the developed delta domain fopid using dspace and the steady state response in noted. the output of the closed loop system with random variation of step input, is demonstrated in fig. 18. from the fig. 18, it is very clear that the steady state error becomes zero though a sufficient perturbation is applied at the input side. this proves the system to be a robust one and sensitive to input variation . fig. 18 steady state error of the closed loop system for a random perturbation the foc designed using continuous and discrete delta domain must have to be stable. the pole -zero plotting of the designed controller in both domains are shown in fig. 19 and fig. 20. from fig. 19 and fig. 20 the stability of the realized controllers is ensured. fig. 19 pole-zero plot of discrete delta(  ) fopid controller 206 s. k. dolai, a. mondal, p. sarkar fig. 20 pole-zero plot of continuous time fopid controller table 3 comparative analysis of the time domain parameters for variation of the dc gain ‘kp’ 6. conclusion in this paper, the design and implementation of fractional order controller in the delta domain is presented. one of the essential properties of the fractional-order system is isodamping property. the fractional-order pid controller is designed in delta domain from corresponding continuous-time fopid controller transfer function by using the direct discretization method and the delta fopid controller is then realized using delta direct form-ii structure of filter realization. the ds1202 dspace board is used in this work to implement the controller through the matlab/simulink and control desk interface of the dspace board. this approach is devoid of ill-conditioning which is inherentin the case with shift operator parameterization. in this work, the sampling rate (δ=0.001 sec) is considered very close to zero to obtain a discrete time system with very high sampling realization methods s-domain realization analog realization [33] delta domain realization kp = 0.25 %mp 11.2 4.11 1.4 ts (ms) 0.86 0.54 1.1 kp = 0.5 %mp 12.9 10.9 9.28 ts (ms) 0.52 0.32 .95 kp = 1 %mp 14.23 14 14.53 ts (ms) 0.29 0.2 .74 kp = 2 %mp 11.29 12.3 12.59 ts (ms) 0.17 0.11 1.1 kp = 4 %mp 7.3 7.9 7.1 ts (ms) 0.07 0.052 1.14 kp = 8 %mp 8.1 5.8 2.3 ts (ms) 0.021 0.017 0.96 design and implementation of fractional-order controller in delta domain 207 rate. the fopid controller designed in the delta domain gives the response characteristics very close to the responses obtained from the analog realization of the fopid controller, which is designed in the s-domain. when the dc gain "kp" is varied over a specified range, the response characteristics of the overall system remains almost unaltered meaning the property of iso-damping is satisfied. from the table 3, it is evident that the results are very close to each other in regard to the time response parameters among the three methods of designing fopid controller. the stability of the realized system is also verified through the pole and zero locations of developed delta domain controller. the system response remains stable with a perturbation in the step input as demonstrated in fig.18.the results obtained using delta parameterized discrete-time system resembles to that of the results as obtained by continuoustime system at a fast-sampling rate makes the design a unified one and a viable alternative for the discrete fractional order controller design and implementation. references [1] i. podlubny, fractional differential equations, elsevier, 1998. [2] m. nakagawa and k. sorimachi, "basic characteristics of a fractance device", ieice trans. fundamentals electron., commun. comput. sci., vol. 75, pp. 1814-1819, dec. 1992. [3] a. oustaloup, la dérivation non entière, hermes science publication, 1995. [4] r. caponetto, g. dongola, l. fortuna and i. petrá, fractional order systems: modeling and control applications, world scientific, 2010. [5] k. b. oldham and j. spanier, the fractional calculus: theory and applications of differentiation and integration to arbitrary order, elsevier science, 1974. [6] i. podlubny, "fractional-order systems and piλdμ-controllers", ieee trans. automatic contr., vol. 44, no. 1, pp. 208-214, jan. 1999. [7] k. s. miller and b. ross, an introduction to the fractional calculus and fractional differential equations, john wiley & sons, july 1993. [8] y. q. chen, i. petrá and d. xue, "fractional order control a tutorial", in proceedings of the 2009 american control conference, pp. 1397-1411, june 2009. [9] h. h. sun, b. onaral and y. y. tso, "application of the positive reality principle to metal electrode linear polarization phenomena", ieee trans biomed eng, vol. bme-31, pp. 664-674, oct. 1984. [10] h. h. sun, a. a. abdelwahab and b. onaral, "linear approximation of transfer function with a pole of fractional power", ieee trans automat contr, vol. 29, pp. 441-444, may 1984. [11] s. b. skaar, a. n. michel and r. a. miller, "stability of viscoelastic control systems", in proceedings of the 26th ieee conference on decision and control, vol. 26, pp. 1582-1587, july 1987. [12] n. engheta, "fractional calculus and fractional paradigm in electromagnetic theory", in proceedings of the international conference on mathematical methods in electromagnetic theory (mmet 98) (cat. no.98ex114), vol. 1, pp. 43-49, june 1998. [13] j. swarnakar, p. sarkar and l. j. singh, "a unified direct approach for discretizing fractional-order differentiator in delta-domain", int. j. model. simul. sci. comput., vol. 9, pp. 1850055:1-1850055:20, aug. 2018. [14] j. a. t. machado, "analysis and design of fractional-order digital control systems", syst. anal. modelling simulation, vol. 27, pp. 107-122, 1997. [15] r. h. middleton and g. c. goodwin, digital control and estimation: a unified approach, englewood cliffs, nj, prentice hall, 1990. [16] a. khodabakhshian, v. j. gosbell and f. coowar, "discretization of power system transfer functions", ieee trans. power syst., vol. 9, no. 1, pp. 255-261, feb. 1994. [17] g. c. goodwin, r. h. middleton and h. v. poor, "high-speed digital signal processing and control" in proceedings of the ieee, vol. 80, no. 2, pp. 240-259, feb. 1992. [18] j. cortés-romero, a. luviano‐juárez and h. j. sira-ramírez, "a delta operator approach for the discretetime active disturbance rejection control on induction motors", math. probl eng, vol. 2013, pp.1-9, nov. 2013. [19] s. ganguli, g. kaur and p. sarkar, "identification in the delta domain: a unified approach via gwocfa", soft. comput., vol. 24, no. 3, pp. 4791-4808, april 2020. 208 s. k. dolai, a. mondal, p. sarkar [20] y. zhao and d. zhang, "h∞ fault detection for uncertain delta operator systems with packet dropout and limited communication", in proceedings of the american control conference, 2017, pp. 4772-4777. [21] j. gao, s. chai, m. shuai, b. zhang and l. cui, "detecting false data injection attack on cyberphysical system based on delta operator", in proceedings of the chinese control conference (ccc), 2018, pp. 5961-5966. [22] j. swarnakar, p. sarkar and l. j. singh, "direct discretization method for realizing a class of fractional order system in delta domain – a unified approach", automatic control comput. sci., vol. 53, no. 2, pp. 127-139, june 2019. [23] s. dolai, a. mondal and p. sarkar, "a new approach for direct discretization of fractional order operator in delta domain" fu: elec. energ., vol. 35, no. 3, pp. 313-331, sept. 2022. [24] g. maione, "high-speed digital realizations of fractional operators in the delta domain", ieee trans automat contr., vol. 56, no. 3, pp. 697-702, march 2011. [25] r. herrmann, fractional calculus: an introduction for physicists, singapore world scientific publishing, 2011. [26] j. zhong and l. li, "tuning fractional-order piλdμ controllers for a solid-core magnetic bearing system", ieee trans. control syst. technol., vol. 23, pp. 1648-1656, july 2015. [27] c. a. monje, y. q. chen, b. m. vinagre, d. xue and v. feliu, fractional-order systems and control : fundamentals and applications, springer-verlag, 2010, london. [28] b. saidi, m. amairi, s. najar and m. aoun, "bode shaping-based design methods of a fractional order pid controller for uncertain systems", nonlinear dyn., vol. 80, pp. 1817-1838, sept. 2015. [29] r. duma, p. dobra, and m. trusca, "embedded application of fractional order control",” electron lett, vol. 48, pp. 1526-1528, nov. 2012. [30] t. n. l. vu and m. lee, "analytical design of fractional-order proportional-integral controllers for timedelay processes", isa trans., vol. 52, no. 5, pp. 583-591, sept. 2013. [31] i. podlubny, i. petráš, b. m. vinagre, et al., "analogue realizations of fractional-order controllers". nonlinear dyn., vol. 29, pp. 281-296, july 2002. [32] j. petrzela, r. sotner and m. guzan, "implementation of constant phase elements using low-q band-pass and band-reject filtering sections," in proceedings of the international conference on applied electronics (ae), pilsen, czech republic, 2016, pp. 205-210. [33] c. muñiz-montero, l. v. garcía-jiménez, l. a. sánchez-gaspariano, c. sánchez-lópez, v. r. gonzález-díaz and e. tlelo-cuautle, "new alternatives for analog implementation of fractional-order integrators, differentiators and pid controllers based on integer-order integrators", nonlinear dyn, vol. 90, pp. 241256, oct. 2017. [34] b. m. vinagre, i. podlubny, a. hernandez and v. feliu, "some approximations of fractional order operators used in control theory and applications", j. fract. calc. appl. anal., pp. 231-248, jan. 2000. [35] s. khubalkar, a. junghare, m. aware and s. das, "unique fractional calculus engineering laboratory for learning and research", int. j. electr. eng. education, vol. 57, no. 1, pp. 3-23, jan. 2020. [36] m. s. monir, w. s. sayed, a. h. madian, a. g. radwan and l. a. said, "a unified fpga realization for fractional-order integrator and differentiator", electronics, vol. 11, no. 13, p. 2052, june 2022. [37] k. s. khattri, "new close form approximations of ln (1 + x)", teaching of math., vol. 12, no. 1, pp. 714, dec. 2009. [38] w. rui, s. qiuye, z. pinjia, g. yonghao, q. dehao and w. peng, "reduced-order transfer function model of the droop-controlled inverter via jordan continued-fraction expansion", ieee trans. energy conver., vol. 35, pp. 1585-1595, march 2020. [39] y. chen, b. m. vinagre and i. podlubny, "continued fraction expansion approaches to discretizing fractional order derivatives—an expository review", nonlinear dyn., vol. 38, no. 1, pp. 155-170, dec. 2004. 13289 facta universitatis series: electronics and energetics vol. 38, no 3, september 2025, pp. 457 468 https://doi.org/10.2298/fuee2503457b © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper automated synthesis of a high-speed adder padmanabhan balasubramanian1, nikos e. mastorakis2 1college of computing and data science, nanyang technological university, singapore 2technical university of sofia, english language faculty of engineering (elfe), department of industrial engineering, sofia, bulgaria orcid ids: padmanabhan balasubramanian https://orcid.org/0000-0001-9412-4773 nikos e. mastorakis n/a abstract. at the gate level, the kogge-stone adder (ksa) is known to outperform many high-speed adders including other parallel prefix adders in terms of the speed performance. this paper presents a methodology to synthesize a new high-speed adder automatically, called the ahsa, using a logic synthesis tool. we describe what adder architectures can be input to a logic synthesis tool and what synthesis constraints should be specified so that the ahsa can be automatically synthesized. the ahsa is significant since it has a speed similar to that of the ksa while requiring less area and dissipating less power. in this paper, 32-bit addition serves as an example, and various adders belonging to different architectures were synthesized using a 28 nm synopsys cmos standard cell library. the design metrics estimated show that while the ksa has a 5.2% reduced delay than the ahsa, the ahsa occupies 29.1% less area and consumes 9.6% less power than the ksa. in terms of the figures of merit used for a digital circuit design such as power-delay product (pdp), area-delay product (adp), and power-delay-area product (pdap), the ahsa achieves a 4.7% reduced pdp, a 25.2% reduced adp, and a 32.4% reduced pdap compared to the ksa. this paper demonstrates that when speed is the key factor in an adder design, the ahsa is preferable to the ksa. moreover, the ahsa is shown to be significantly faster than other high-speed adders at the gate level. key words: digital circuits, computer arithmetic, adder, logic design, cmos, high-speed 1. introduction high-speed adders are critical in digital circuits and computer architecture, primarily used for performing addition operations quickly. some key uses of high-speed adders are given as follows. high-speed adders are important in arithmetic and logic units that perform arithmetic and logical operations in processors. high-speed adders are used in received november 30, 2024; revised march 13, 2025 and april 03, 2025; accepted april 06, 2025 corresponding author: padmanabhan balasubramanian college of computing and data science, nanyang technological university, singapore e-mail: balasubramanian@ntu.edu.sg https://orcid.org/0000-0001-9412-4773 458 p. balasubramanian, n. e. mastorakis digital signal processors for the fast computation of algorithms such as filtering and fourier transforms. high-speed adders help to speed up the operation of embedded systems and general-purpose processors by speeding up arithmetic operations. high-speed adders support fast computations necessary for handling complex graphics in graphics processing units. fast addition using high-speed adders is critical in cryptographic algorithms where performance can significantly impact security operations. high-speed adders are used in highperformance computing to perform complex mathematical computations where speed is vital. further, high-speed adders are often implemented in application-specific integrated circuits and field-programmable gate arrays to optimize specific functions. thus, high-speed adders play a fundamental role in enhancing the speed performance of digital electronic circuits and systems. addition and multiplication are fundamental arithmetic operations that consume significant power in computing systems. for instance, in [1], it was noted that in graphics processing units, arithmetic operations such as addition/multiplication were responsible for more than 70% of their power consumption. in fast fourier transform processors, addition and multiplication account for approximately 80% of the total power [2]. adders are crucial for performing arithmetic computations and are integral to the data paths of digital signal processors. studies have shown that addition is often executed in real-time digital signal processing [3]. a study of an arm processor’s arithmetic and logic unit revealed that addition is involved in nearly 80% of its operations [4]. consequently, developing high-speed adders is critical to improving the efficiency of digital systems. literature discusses several adder architectures [5,6], including the ripple carry adder (rca) comprising a cascade of one-bit full adders or two-bit full adders [7], the conditional-sum adder (csma) [8], the carry skip adder (cska) [9], the carry-select adder (csla) constructed using two rcas [10] or one rca and an add-one circuit or a binary to excess-1 code converter [11,12], diverse carry look-ahead adders (clas) such as the conventional cla [13], the delay-optimized cla [14] and the new cla [15], as well as a family of parallel prefix adders (ppas) [16]. all these adder architectures are well documented in the literature, and their performance parameters were compared [15]. the ppa [16] is an advanced adder architecture, and several variants of ppas have been explored, such as the brent-kung adder (bka) [17], the sklansky adder [18], and the kogge-stone adder (ksa) [19]. while all ppas aim to accelerate addition through parallelized carry generation, each differs in structure, performance, and area utilization. the ksa, known for its highly parallel binary tree structure, performs prefix operations quickly, making it faster than the other ppas. however, the ksa requires more area than other ppas due to its extensive parallelism. nevertheless, the ksa excels in scalability and handles large bit widths effectively, this paper presents a method to automatically synthesize a new high-speed adder called ahsa that optimizes the trade-off between area, delay, and power, outperforming the ksa in terms of efficiency. while the ksa is widely acknowledged as one of the fastest gate-level adders, it often underperforms in terms of area and power consumption compared to other high-speed alternatives. in contrast, the newly synthesized adder (ahsa) achieves a speed performance comparable to the ksa but with reduced area and power requirements. the remainder of the paper is structured as follows: section 2 discusses the methodology used to synthesize the ahsa with a synthesis tool. section 3 presents the standard design metrics of various 32-bit adders, which were synthesized using a 28 nm synopsys cmos standard cell library and characterized using synopsys eda tools. section 4 summarizes the contributions of this work. automated synthesis of a high-speed adder 459 2. automated high-speed adder synthesis the output of a logic synthesis tool depends on the input provided, which may be described in a hardware description language, and the specific synthesis scripts that dictate whether the synthesis should be optimized for area, speed, or power. through a series of experiments, we noted that certain high-speed adder architectures, when described in verilog and synthesized under specific constraints using a logic synthesis tool (synopsys designcompiler) can automatically generate a new high-speed adder, which we label as the automatically generated high-speed adder (ahsa). the ahsa is observed to be closer in speed to the ksa but requires less area and dissipates less power. however, we also noted that not all high-speed adder architectures described in verilog result in an ahsa after synthesis when using the same synthesis scripts. therefore, this paper provides specific information on which adder architectures to use as input and outlines the necessary design constraints to specify to synthesize an ahsa. our experimentation has revealed that when certain adders are described structurally, i.e., using gate primitives in verilog and synthesized using designcompiler by specifying the constraints ‘set_dp_smartgen_options -optimize_for speed’ and ‘compile_ultra,’ yield the ahsa. these adders include (i) an rca composed of cascaded two-bit full adders, (ii) cla architectures employing standard or delay-optimized cla modules of uniform size [20], and (iii) an ncla [15] employing delay-optimized cla modules of varying sizes. for reference, we have made available the structural verilog code of a 32-bit cla, constructed using eight 4-bit clas, and the synthesized gate-level netlist of the ahsa on github [21], which is open for access. the synthesis was carried out using synopsys designcompiler, utilizing the gates of a 28 nm synopsys cmos standard cell library [22]. for example, figs. 1 and 2 illustrate standard 4-bit clas used to construct a conventional 32-bit cla. in fig. 1, the 4-bit cla has no carry input, and in fig. 2, the 4bit cla has a carry input. here, ax+4 to ax and bx+4 to bx represent the augend inputs, cx denotes the carry input, sx+4 to sx represents the sum outputs, and cx+4 denotes the carry output. cx+3 to cx+1 denote internal carry signals. in figs. 1 and 2, px+3 to px denote carry-propagate logic, and gx+3 to gx denote carry-generate logic. assuming ay and by to be the adder inputs, the carry-propagate and carry-generate logic are generally expressed as the logical exclusivity and logical conjunction of inputs as follows: py = ayby, and gy = ayby. the generalized expressions for lookahead carry outputs with no carry input (i.e., cx = 0), and the sum output of a 4-bit cla is given by (1) to (5) below: cx+1 = gx (1) cx+2 = gx+1 + px+1gx (2) cx+3 = gx+2 + px+2gx+1 + px+2px+1gx (3) cx+4 = gx+3 + px+3gx+2 + px+3px+2gx+1 + px+3px+2px+1gx (4) sk = pk  ck (5) 460 p. balasubramanian, n. e. mastorakis fig. 1 structural diagram of a 4-bit cla with no carry input the generalized expressions for lookahead carry outputs of a 4-bit cla with a carry input (cx) are given by (6) to (9) below: cx+1 = gx + pxcx (6) cx+2 = gx+1 + px+1gx + px+1pxcx (7) cx+3 = gx+2 + px+2gx+1 + px+2px+1gx + px+2px+1pxcx (8) cx+4 = gx+3 + px+3gx+2 + px+3px+2gx+1 + px+3px+2px+1gx + px+3px+2px+1pxcx (9) automated synthesis of a high-speed adder 461 fig. 2 structural diagram of a 4-bit cla having a carry input after synthesizing a 32-bit ahsa using a standard digital cell library, its gate-level netlist was simulated for functionality using synopsys vcs by supplying approximately a thousand random inputs at a nominal latency of 4 ns. an image showing a segment of simulation waveforms of the 32-bit ahsa is shown in fig. 3 where a[31:0] and b[31:0] represent the adder’s inputs, and sum[32:0] represents the adder’s output. the adder inputs and output are shown in hexadecimal in fig. 3. four markers, namely m1, m2, m3, and m4, are highlighted in fig. 3, which capture specific instances of the inputoutput waveforms. m1 highlights the scenario where inputs (eeee eeee) and (efff eeef) are added, resulting in a sum of (1 deee dddd). m2 highlights the scenario where (ffff ffff) and (feee fffe) are added, resulting in a sum of (1 feee fffd). m3 highlights the scenario where (0000 0000) and (0000 0000) are added, resulting in a sum of (0 0000 0000). lastly, m4 highlights the scenario where (1111 1111) and (1111 1111) are added, resulting in a sum of (2222 2222). 462 p. balasubramanian, n. e. mastorakis fig. 3 an image showing a segment of simulation waveforms of the 32-bit ahsa, obtained using synopsys vcs 3. design metrics of adders here, we consider 32-bit addition as an example, although the addition of any size could be considered. contrary to some existing works such as say [12] which considered different adder designs corresponding to one specific architecture viz. the csla for implementation and comparison, here, various 32-bit adders belonging to diverse architectures such as the rca, cska, csma, csla, clas (ccla, dcla, and ncla), and well-known ppas were considered for implementation and comparison. to synthesize a 32-bit rca, a 32-bit adder was described in data-flow style in verilog using the arithmetic operator (+), and the ‘compile_ultra’ command of designcompiler was used for synthesis, resulting in an rca comprising 31 full adders and a half adder logic. all the high-speed adders were described at the gate level in verilog for synthesis using a 28-nm cmos standard digital cell library [22]. the synthesis targeted a typical process, voltage, and temperature condition of the cell library (supply voltage = 1.05 v; operating junction temperature = 25 °c). the operating condition chosen is ‘ttlp05v25c’, and the library specification used is ‘saed32hvt_ttlp05v25c’. default wire load models were automatically chosen by designcompiler to estimate the delay and power consumption of interconnects (wires) during the synthesis process. two common wire load models are forqa and 8000. forqa is primarily used for quality assurance (qa) testing. this model provides a conservative estimate of wire delay and capacitance for synthesizing designs, focusing on ensuring that the design will meet timing and power requirements across a wide range of conditions. it is typically used in environments where design quality needs to be validated against typical wire characteristics. the 8000 wire load model is more specific and widely used, typically for large designs. this model estimates the wire delay based on a set of empirical parameters and is named ‘8000’ because it is often applied in designs with around 8000 gates. it provides more accurate estimations for wire delay and capacitance, especially for larger designs, making it more suited for general production use. both models serve to help designers understand the impact of interconnects on overall performance, but they differ in their application contexts and accuracy, with forqa automated synthesis of a high-speed adder 463 focusing on qa and 8000 offering more practical use in larger designs. here, forqa was used as the default wire load model for synthesis using the compile_ultra command; 8000 was used as the default wire load model for synthesis using the compile_ultra command with speed specified as the optimization goal; and the wire load model 8000 was used for the top module while the wire load model forqa was used for the bottom (i.e., instantiated) modules for synthesis using the compile command with speed specified as the optimization goal. a fanout-of-4 driving strength was uniformly associated with the sum bits of all the adders. during the synthesis, a virtual clock was used to constrain the adders’ inputs and outputs. the clock does not form a part of the physical design, and it has no impact on the design metrics. a 32-bit rca implemented with a cascade of two-bit full adders, as outlined in [7], is referred to as rca-2 in this work. we considered three types of clas: the conventional cla (ccla) consisting of standard and uniform-size cla modules, the delay-optimized cla (dcla) comprising delay-optimized and uniform-size cla modules, and the new cla (ncla) featuring delay-optimized and non-uniform-size cla modules. the details of cclas and dclas are given in [20], and the details of nclas are given in [15]; hence, an interested reader is suggested to refer to the same for necessary information. given that we consider the 32-bit addition as a representative example here, three 32-bit cclas were examined, each comprising a different number of clas: one with sixteen 2-bit clas (ccla-2×16), another with eight 4-bit clas (ccla-4×8), and another with four 8-bit clas (ccla-8×4). likewise, three 32-bit dclas were also considered, referred to as dcla2×16, dcla-4×8, and dcla-8×4 in the paper. among several nclas, ncla-8844422, which utilizes 2-bit, 4-bit, and 8-bit clas, was the best optimized [15]. therefore, we considered this ncla alone for this work. for the 32-bit ksa, we referenced the structural description provided in [23]. regarding the csla, we followed the guidance given in [24], which recommended an 8-8-8-8 input partition to realize a delay-optimized csla. additionally, we referred to the synopsys designware library that contains synthesis-ready models of some high-speed adders such as the ling adder, csma, bka, and the sklansky adder. all the high-speed adders were synthesized using the ‘compile’ command, with speed set as the optimization goal in the first round. next, they were all synthesized using the ‘compile_ultra’ command with speed set as the optimization goal in the second round. for synthesis using designcompiler, the ‘compile’ command with speed optimization uses less aggressive optimization techniques, and its focus is on achieving a balance between timing and other design goals, such as area or power. the ‘compile’ command with speed optimization generally includes gate resizing, buffer insertion, basic logical restructuring, etc. on the other hand, the ‘compile_ultra’ command generally leverages advanced and more aggressive timing optimization techniques, including advanced retiming, multilevel optimization, critical path emphasis, etc. the ‘compile_ultra’ command with speed optimization primarily targets speed but also considers other metrics such as area and power. this partly explains why rca-2, cclas, dclas, and the ncla yield the ahsa when the synthesis was performed with speed specified as the optimization goal and the ‘compile_ultra’ command was used in designcompiler. the 32-bit cska yields a high-speed adder that has the same speed and dissipates the same power as the ahsa, but there is a slight variation in the area occupancy. hence, the cska is said to yield the ahsa partly. however, the difference in area between the ahsa and the high-speed adder derived from the cska is negligible. moreover, in the case of the ling adder, csla, bka, sklansky adder, and ksa, some trade-offs in design metrics are noticed when synthesized using ‘compile’ and ‘compile_ultra’ commands. this is due to the native logic optimization algorithms embedded 464 p. balasubramanian, n. e. mastorakis in a (commercial) synthesis tool that are not accessible to an end user, so a trial-and-error approach may have to be adopted to achieve a preferred design outcome. after synthesis using designcompiler, the total area of each adder, which includes their cell area and interconnect area, was estimated. the gate-level netlists of the adders obtained by synthesis were validated for functional correctness using synopsys vcs, with a test bench comprising approximately one thousand random inputs. the inputs to the adders were provided at a nominal latency of 4 ns to accommodate the critical path delay of the slower rca. the power dissipation of adders was estimated by considering their switching activity recorded via functional simulations performed using vcs. synopsys primepower was used to estimate the total (average) power dissipation. the critical path delay of adders was determined using primetime, with a virtual clock constraining the inputs and outputs of the adder. since the virtual clock is not part of the actual design, it did not affect the design metrics. a fanout-of-4 drive strength was applied to the sum outputs of all adders. a default wire-load model was used during synthesis to account for interconnect and parasitic effects. the following versions of synopsys eda tools were utilized in this research: (i) designcompiler: q-2019-12-sp5, (ii) primetime (primepower): o-2018.06-sp5-2, and (iii) vcs: 2020_12_sp2_6. the standard design metrics, namely total area (i.e., cells area + interconnect area), critical path delay, and total power dissipation of various adders synthesized, are given in table 1. table 1 presents three categories of adders synthesized using designcompiler by applying different synthesis settings to the verilog description of adders. the first category comprises the conventional rca obtained by synthesizing an adder described using the arithmetic operator (+) using the ‘compile_ultra’ command. the second category comprises the ksa and ncla-8844422 synthesized using designcompiler using the ‘compile’ command with speed designated as the optimization goal. reference [15] presented a comparison of design metrics of various adders belonging to diverse architectures, which were synthesized using the ‘compile’ command with speed set as the optimization goal. it was observed in [15] that the ksa is the fastest, although it occupies more area and dissipates more power than other adders, while ncla-8844422 offers a good trade-off between delay, area, and energy compared to its counterparts. hence, these two adders are of primary interest here, and therefore, their design metrics are shown in table 1 for speed-oriented synthesis using the compile command. also, we noted that the ahsa did not result based on the synthesis of any high-speed adder using the ‘compile’ command with the optimization goal set as speed. so, the design metrics of the rest of the high-speed adders, given in [14], are not repeated here. the third category of adders given in table 1 was synthesized using designcompiler using the ‘compile_ultra’ command with speed set as the optimization goal. instances of ahsa synthesis corresponding to the third category of adders are highlighted in boldface in table 1. figure 4 shows the split-up of total power dissipation of various adders synthesized based on different synthesis settings using designcompiler. the summation of cell internal power and net switching power is referred to as the dynamic power, and the cell leakage power denotes the static power, as reported by synopsys primepower. in figure 4, three notations are used within brackets, namely ‘cu’, ‘c&s’, and ‘cu&s’ – these refer to the synthesis of adders using compile_ultra command, compile command with speed set as the optimization goal, and compile_ultra command with speed set as the optimization goal, respectively. automated synthesis of a high-speed adder 465 table 1 design attributes of various 32-bit adders estimated after synthesis using a 28 nm cmos standard digital cell library by applying different synthesis settings adder input to the synthesis tool area (µm2) delay (ns) power (µw) ahsa yielded cells interconnect total rca synthesized using the ‘compile_ultra’ command; no optimization goal specified adder (+) 155.03 10.98 166.01 3.40 42.13 no synthesis using the ‘compile’ command; optimization goal – speed ksa 1014.29 174.43 1188.72 0.73 84.99 no ncla-8844422 476.52 53.21 529.73 0.99 50.00 no synthesis using the ‘compile_ultra’ command; optimization goal – speed adder (+) 387.06 62.75 449.81 2.74 56.63 no rca-2 728.63 114.19 842.82 0.77 76.81 yes cska 729.91 114.18 844.09 0.77 76.81 partly csma 412.48 77.65 490.13 1.71 69.43 no csla 444.75 72.41 517.16 1.62 66.47 no ling adder 391.89 76.10 467.99 2.56 64.19 no ccla-2×16 728.63 114.19 842.82 0.77 76.81 yes ccla-4×8 728.63 114.19 842.82 0.77 76.81 yes ccla-8×4 728.63 114.19 842.82 0.77 76.81 yes dcla-2×16 728.63 114.19 842.82 0.77 76.81 yes dcla-4×8 728.63 114.19 842.82 0.77 76.81 yes dcla-8×4 728.63 114.19 842.82 0.77 76.81 yes ncla-8844422 728.63 114.19 842.82 0.77 76.81 yes bka 425.69 82.61 508.30 2.35 67.29 no sklansky adder 391.89 76.10 467.99 2.56 64.19 no ksa 515.15 94.39 609.54 1.85 61.92 no fig. 4 split-up of total power dissipation of various adders in terms of their dynamic and static power components (given in µw). the blue, orange, and green bars represent the net switching power, cell internal power, and cell leakage power, respectively. the net switching power and cell internal power together account for the dynamic power, and the cell leakage power accounts for the static power. 466 p. balasubramanian, n. e. mastorakis from table 1, it is noted that the ksa synthesized using the ‘compile’ command with speed specified as the optimization goal, and the ahsa synthesized by applying the ‘compile_ultra’ command on select adders with speed specified as the optimization goal stand out from the rest in terms of speed. from table 1, it may be understood that while the cska, csma, csla, ling adder, cclas, dclas, ncla (ncla-8844422), bka, and sklansky adder are considered high-speed adders, the existing ksa and the newly presented ahsa may be categorized as ‘very high-speed adders’ due to their significantly faster performance. the gates present in the critical path of the 32-bit ahsa and the 32-bit ksa (synthesized by the ‘compile’ command), determined from the timing reports generated by primetime, are expressed by (10) and (11). dahsa_32b = dnor2x0 + (3×doai21x1) + (2×daoi21x1) + dxnor2x1 (10) dksa_32b = (2×dxor2x1) + (5×dao21x1) + dand2x1 (11) in (1) and (2), dnor2x0 denotes the average delay of a 2-input nor gate, doai21x1 denotes the average delay of an or-and-invert complex gate, daoi21x1 denotes the average delay of an and-or-invert complex gate, dxnor2x1 denotes the average delay of a 2-input xnor gate, dxor2x1 denotes the average delay of a 2-input xor gate, dao21x1 denotes the average delay of an and-or complex gate, and dand2x1 denotes the average delay of a 2-input and gate. in the gate delay notations, the suffix ‘x0’ implies a gate drive strength of 0.5, indicating an associated capacitive load of 2 ff, and the suffix ‘x1’ implies a gate drive strength of 1, indicating an associated capacitive load of 4 ff. substituting the average delays of gates in the standard cell library [22] into (1) and (2), the theoretical critical path delays of 32-bit ahsa and 32-bit ksa are calculated as 0.599 ns and 0.585 ns. though a theoretical calculation of critical path delays is approximate in the absence of interconnect and parasitic, nevertheless, the theoretical calculation points to a slightly lesser delay for the ksa compared to the ahsa which agrees with the trend noticed in the practical (physical) estimates of 0.73 ns for the former and 0.77 ns for the latter. the ahsa demonstrates substantial reductions in critical path delay compared to other high-speed adders, as summarized below. ▪ 73.7% reduction compared to cska (synthesized by ‘compile_ultra’) ▪ 55% reduction compared to csma (synthesized by ‘compile_ultra’) ▪ 33.6% reduction compared to csla (synthesized by ‘compile_ultra’) ▪ 67.8% reduction compared to ling adder (synthesized by ‘compile_ultra’) ▪ 33.6% reduction compared to ccla-8×4 (synthesized by ‘compile_ultra’) ▪ 26.2% reduction compared to ncla-8844422 (synthesized by ‘compile_ultra’) ▪ 68.2% reduction compared to bka (synthesized by ‘compile_ultra’) ▪ 71.9% reduction compared to sklansky adder (synthesized by ‘compile_ultra’) from the perspective of speed, the ahsa and the ksa are comparable. the synthesis results show that the ksa achieves a 5.2% reduction in delay compared to the ahsa. however, the ahsa occupies 29.1% less area and consumes 9.6% less power than the ksa. three well-known figures of merit used for a digital logic design are power-delay product (pdp), area-delay product (adp), and power-delay-area product (pdap). pdp quantifies the energy consumed per switching event in a digital circuit, making it a key metric for energy-efficient design. a lower pdp indicates that the circuit consumes less power while maintaining fast switching, which is crucial for battery-powered and lowpower applications. pdp is particularly useful for evaluating trade-offs in high-speed automated synthesis of a high-speed adder 467 circuits where power dissipation and operational speed are both critical factors. adp measures the trade-off between circuit area and speed, helping designers optimize for both compactness and performance. a lower adp signifies a design that is both smaller and faster, which is particularly important for system-on-chip and applications with stringent area constraints. this metric ensures that performance gains do not come at an excessive cost in chip real estate. pdap integrates power, delay, and area into a single metric, offering a comprehensive evaluation of circuit efficiency. it is particularly useful in scenarios where designers should optimize for low power, high speed, and minimum area simultaneously, such as in energy-efficient processors and compact embedded systems. a lower pdap is ideal for applications that require balanced power, performance, and silicon cost. we noted from table 1 that the ahsa achieves a 4.7% reduced pdp, a 25.2% reduced adp, and a 32.4% reduced pdap compared to the ksa. when speed is the key factor in an adder design, the ahsa is preferable to the ksa. moreover, the ahsa is shown to be significantly faster than other high-speed adders at the gate level. 4. conclusion this paper expounded the automatic synthesis of a very high-speed adder (called the ahsa), using a commercial logic synthesis tool. the ahsa demonstrated its competitive performance alongside the ksa, which is generally considered the fastest gate-level adder. through experimentation, we observed that an rca constructed via a cascade of two-bit full adders, or clas when given as inputs to the synthesis tool (designcompiler), and synthesized using the ‘compile_ultra’ command with speed specified as the optimization goal, the ahsa was generated. the functionality of the ahsa, along with several other highspeed adders, was verified through simulation, and the design metrics were estimated. notably, the ahsa is significantly faster than all other high-speed adders, except the ksa. nevertheless, the critical path delays of ahsa and ksa are comparable, and ahsa occupies less area and has less power dissipation. therefore, it can be concluded that when speed is the primary criterion for an adder design, which is the norm in a high-performance computing environment, the ahsa emerges as a preferred option to the ksa. we also provided an example adder code that was input to the synthesis tool and the gate-level netlist of the ahsa synthesized in a publicly accessible format through github [21], which could be useful to researchers in academia/industry. although we discussed the synthesis of ahsa in this paper using synopsys designcompiler, there is no information about whether the ahsa could be synthesized using any other logic synthesis tool (open-source or commercial) based on specific synthesis constraints as reported in this work in the existing literature. hence, we leave this issue to the research community to ponder further work in this aspect. also, the scope for further work exists whereby the ahsa may be considered for the realization of arithmetic circuits such as multipliers, multiply-and-accumulate units, etc., to investigate the significance of the ahsa. references [1] h. zhang, m. putic and j. lach, "low power gpgpu computation with imprecise hardware", in proceedings of the 51st design automation conference, 2014, pp. 1-6. [2] l. wanhammar, dsp integrated circuits, cambridge, ma, usa: academic press, 1999. 468 p. balasubramanian, n. e. mastorakis [3] d. c. chen, l. m. guerra, e. h. ng, m. potkonjak, d. p. schultz and j. m. rabaey, "an integrated system for rapid prototyping of high performance algorithm specific data paths", in proceedings of the international conference on application specific array processors, 1992, pp. 134-148. [4] j. d. garside, "a cmos vlsi implementation of an asynchronous alu", in proceedings of the ifip wg10.5 working conference on asynchronous design methodologies, 1993, 181-192. [5] a. r. omondi, computer arithmetic systems: algorithms, architecture and implementations, new york, usa: prentice hall, 1994. [6] m. d. ercegovac and t. lang, digital arithmetic, burlington, ma, usa: morgan kaufmann publishers, 2004. [7] p. balasubramanian, k. prasad and n. e. mastorakis, "a standard cell based synchronous dual-bit adder with embedded carry look-ahead", wseas trans. circ. syst., vol. 9, pp. 736-745, dec. 2010. [8] j. sklansky, "conditional-sum addition logic", ire trans. electron. comput., vol. ec-9, pp. 226-231, june 1960. [9] b. parhami, computer arithmetic: algorithms and hardware designs, 1st edition, new york, usa: oxford university press, 2000. [10] o. j. bedrij, "carry-select adder", ire trans. electron. comput., vol. ec-11, pp. 340-346, june 1962. [11] t.-y. chang and m.-j. hsiao, "carry-select adder using single ripple-carry adder", electron. lett., vol. 34, pp. 2101-2103, oct. 1998. [12] b. ramkumar and h. m. kittur, "low-power and area-efficient carry select adder", ieee trans. very large scale integr. (vlsi) syst., vol. 20, pp. 371-375, feb. 2012. [13] g. b. rosenberger, simultaneous carry adder, u.s. patent 2966305, 27 december 1960. [14] h. ling, "high-speed binary adder", ibm j. res. dev., vol. 25, pp. 156-166, may 1981. [15] p. balasubramanian and d. l. maskell, "a new carry look-ahead adder architecture optimized for speed and energy", electronics, vol. 13, p. 3668, sept. 2024. [16] s. knowles, "a family of adders", in proceedings of the 15th ieee symposium on computer arithmetic, 2001, pp. 1–8. [17] r. p. brent and h. t. kung, "a regular layout for parallel adders", ieee trans. comput., vol. c-31, pp. 260-264, march 1982. [18] j. sklansky, "an evaluation of several two-summand binary adders", ire trans. electron. comput., vol. ec-9, pp. 213-226, june 1960. [19] p. m. kogge and h. s. stone, "a parallel algorithm for the efficient solution of a general class of recurrence equations", ieee trans. comput., vol. 100, pp. 786-793, aug. 1973. [20] p. balasubramanian and n. e. mastorakis, "high-speed and energy-efficient carry look-ahead adder", j. low power electron. appl., vol. 12, p. 46, aug. 2022. [21] [online] available at: https://github.com/balaccds/32-bit-carry-look-ahead-adder [22] synopsys saed_edk32/28_core databook, revision 1.0.0. january 2012. [23] a. yazdanbakhsh, d. mahajan, h. esmaeilzadeh and p. lofti-kamran, "axbench: a multiplatform benchmark suite for approximate computing", ieee design & test, vol. 34, pp. 60-68, apr. 2017. [24] p. balasubramanian and n. mastorakis, "performance comparison of carry-lookahead and carry-select adders based on accurate and approximate additions", electronics, vol. 7, p. 369, dec. 2018. 13307 facta universitatis series: electronics and energetics vol. 38, no 3, september 2025, pp. 469 485 https://doi.org/10.2298/fuee2503457b © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper pv-based rapid charging and battery swapping station for small transport evs in rural areas of west bengal bidrohi bhattacharjee1, shibabrata mukherjee2, rupanjali bhattacharjee3, subha bhattacharya2, ankur ganguly4, arabinda das2 1electrical engineering department, indian institute of technology (ism), dhanbad, jharkhand, india 2electrical engineering department, jadavpur university, kolkata, india 3indian institute of engineering science & technology, shibpur, howrah, india 4royal global university, guwahati, assam, india orcid ids: bidrohi bhattacharjee https://orcid.org/0000-0001-7622-8034 shibabrata mukherjee https://orcid.org/0000-0002-9561-5504 rupanjali bhattacharjee https://orcid.org/0000-0003-3306-8370 subha bhattacharya https://orcid.org/0000-0008-7088-3001 ankur ganguly https://orcid.org/0000-0002-1893-6478 arabinda das https://orcid.org/0000-0002-4025-1928 abstract. the widespread adoption of electric vehicles (evs) necessitates innovative solutions for fast, efficient, and scalable charging infrastructure. the present research work aims to integrate battery swapping stations (bss) with renewable-power source (photo voltaic system), and proposes enhanced financial models to achieve advancements in charger technology. the present approach focuses on the development of optimized llc resonant converters with energy recovery cell (erc) that offer high efficiency, reduced electromagnetic interference, and improved power transfer capabilities. these converters ensure compatibility with various battery chemistries while enhancing energy conversion and thermal management. simulation and experimental results ascertain their ability to meet the fast-charging requirement of high-power evs and reduce energy losses. the sole power source of battery operated electric vehicle (bev) is the battery packs that are installed in the vehicle itself, thus battery depletion with progression of working duration is a critical limitation of bev. charging time of batteries primarily depends upon capacity and application of the battery. longer time compels the ev to become inoperative for the time duration and consequently hinders its operational efficiency. battery swapping provides a practical solution to address these lacunae. by quick replacement of depleted batteries with fully charged ones and consequently reduce ev downtime, economic losses, and offering a received december 05, 2024; revised march 25, 2025 and april 24, 2025; accepted april 29, 2025 corresponding author: bidrohi bhattacharjee department of electrical engineering, indian institute of technology (indian school of mines), dhanbad, jharkhand-826004, india e-mail: onlybidrohi@gmail.com https://orcid.org/0000-0001-7622-8034 https://orcid.org/0000-0002-9561-5504 https://orcid.org/0000-0003-3306-8370 https://orcid.org/0000-0008-7088-3001 https://orcid.org/0000-0002-1893-6478 https://orcid.org/0000-0002-4025-1928 470 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. sustainable, affordable alternative to traditional fuel stations. it represents a transformative step towards more accessible and eco-friendly mobility solutions. key words: bss, energy recovery cell. llc, zvs, ev 1. introduction off late surge in usage of private vehicle along with conventional gasoline based transport vehicle have alarmingly increased the rate of carbon emission. immediate measuring actions are essential to rescue the environment from this greenhouse gas emission. deployment of ev [1] in the transportation system is considered as quintessential alternative that can replace gasoline based cars. valve regulated lead acid (vrla) battery is the main power source for evs the electricity required to drive this car is stored in a pack of batteries. this battery unit provides the required driving power of brushless dc (bldc) motor associated with the vehicle. however, the batteries get depleted after giving service for hours, then the charging of battery becomes critical to run the vehicle further by maintaining the state of charge (soc). on the other hand, to meet the escalating power demand, the power networks mostly operate very near to its rated power delivery capacity. thus, electric energy required to charge the ev imposes additional load to the existing loaded power network. prolonged battery charging time (7 to 8 hours) makes ev inadmissible in the transportation system, as the vehicle becomes dormant during this charging time span. this is the main limitation of ev. to overcome this limiting issue, a viable technical solution and its deployment is required that can forgo the down time of ev and can escalate the operational efficiency with a pragmatic, scalable, and commercially feasible infrastructure device. there are several state-of-the-art approaches observed which primarily deals with the progress in electric vehicle battery charging stations. the literature reviewed underscores the advancements and refinements in electric vehicle (ev) charging systems, highlighting key contributions across various domains. in 2010, sortomme and colleagues analyzed the interplay between losses, load factor, and variance within coordinated plug-in hybrid electric vehicle (phev) charging systems. they developed convex objective functions that streamline real-time dispatch and enable integration into broader optimization frameworks. these methods, being topologyindependent, outperform traditional loss minimization techniques in daily load profile predictions. zakariazadeh et al. (2014) introduced a multi-objective scheduling framework for ev charging and discharging, aiming to lower costs and emissions. their approach utilized vehicle-to-grid (v2g) capabilities, the augmented e-constraint method, and benders decomposition to deliver pareto-optimal solutions, achieving notable reductions in emissions and operational expenses. tan and collaborators (2016) examined the dual advantages of v2g technology, which offers grid services like power regulation and peak load management. despite challenges in battery development, their work highlighted v2g potential for environmental and operational benefits, contingent on effective policies and stakeholder collaboration. yang et al. (2014) developed an ev charging model that integrated optimal power flow, statistical data, user satisfaction, and grid cost considerations. using an advanced particle swarm optimization (pso) algorithm, their model achieved significant cost reductions while meeting user requirements. gan et al. (2012) advocated for decentralized algorithms to optimize ev charging, focusing on demand valley filling with minimal communication and computational requirements. they proposed synchronous and asynchronous methods to pv-based rapid charging and battery swapping station for small transport evs in rural areas... 471 establish effective charging patterns. dong et al. (2018) designed a pricing model for fast charging stations, aligning user travel patterns with demand forecasts to enhance voltage control. their double-layer optimization model balanced station income with user response, improving voltage profiles effectively. fachrizal et al. (2020) reviewed the integration of smart ev charging with photovoltaic (pv) systems, discussing centralized and distributed configurations, objectives, and algorithms. they identified optimization techniques and highlighted research gaps for future exploration. spiazzi et al. (2020) and medina-garcia et al. (2021) explored asymmetrical halfbridge flyback converters for compact, high-speed charging solutions. their innovative control methods, including zero-voltage resonant valley switching, advanced voltage control and efficiency. in most of the reviewed works, application of optimization techniques, involvement of electrical power grid or application of half bridge converter are observed. but amid the emerging energy crisis, the involvement of renewable energy sources gives more viable and energy efficient solution. moreover energy recovery cell with full bridge resonant converter in the present research work gives better solution to the problem related too long battery charging time. hardware implementation of the proposed prototype can harness the practical constraints and viability of the scheme, which is not possible in optimization based techniques to the full extent. so, the present research work aims to reduce the charging time by incorporating an energy recovery cell with the available llc resonant converter [2] technology. this modification of the resonant converter enables the circuit to reuse the output ripple ac voltage of the rectifier and resend the same back to the bus capacitor (cb) present at the beginning of the mosfet based full bridge inverter. this feedback path ensures the saving of power to a considerable extent, reduces the power loss due to zero voltage switching (zvs) technique of the circuit and significantly enhances the overall efficiency. although the above mentioned prototype circuit substantially reduces the battery charging time from 8 hours to 4 hours approximately [3][4]. however, this time span is also long for ev operator as the functioning of ev ceases for this charging time duration. this is reflected as an economical loss which is indeed a practical hindrance in deployment of evs in small scale transportation sector in rural bengal. as ev requires high power and fast charging mechanism, efficient power conversion and proper thermal management are two fundamental criteria for flawless ev operation. thus, modifications in llc converter are made to achieve these goals as far as possible. this research contributes the integration of erc with llc based resonant converter topology powered by solar pv system. moreover, in this work the deployment of bss technology along with above mentioned fast charger development in rural bengal is executed. the presented charging topology is found to address not only the limitation of long charging hours but simultaneously reduces the dormant period of evs to only 10 minutes by incorporating bss schemes. a battery swapping station [5] is a junction where quick replacement of depleted battery associated with electric vehicle can be replaced by a fresh fully charged battery [6]. the scheme of battery exchange can be considered as a temporary solution to recharge the electric vehicle quickly such that the overall run time of the vehicle can be enhanced to considerable time extent. battery swapping technique compensates the loss of ev owner as they do not need to wait until the depleted battery gets fully charged. the bss owns the batteries whereas the ev operator borrows the battery according to their requirement. since the battery swapping includes mechanical interchange of the discharged 472 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. battery [7] with the charged one, the process can also be termed as mechanical refueling. the innovation of bss technology has the potential to revolutionize the future of electric based transportation. the rest of the paper is organized as follows: section 2 proposes bss integrated fast charging prototype, section 3 discusses about the result and analysis of the proposed scheme, where economic analysis, field survey report, cost estimation and a detail of the payback period are presented. section 4 concludes the present research work followed by the discussion about the future scopes of the present work. table 1 provides the abbreviations used in this article. table1 annex: list of abbreviations abbreviation full form ev electric vehicles bss battery swapping stations bev battery operated electric vehicle vrla valve regulated lead acid bldc brushless dc mosfet metal-oxide-semiconductor field-effect transistor cb bus capacitor erc energy recovery cell spv solar photovoltaic zvs zero voltage switching zcs zero current switching bs battery swapping usd united states dollar vp1(s) primary-side voltage in the laplace domain vac ac voltage across the resonant tank lm magnetizing inductance lr resonant inductance cr resonant capacitance rac equivalent ac resistance r load resistance factor vin input voltage the present research work focuses on the development and integration of modified llc resonant converter with erc that aims to reduce the charging time of the ev batteries. the work explores the potential of adopting bss technology so that the ev can undergo a quick recharging process and effectively can increase the working duration of the vehicle. solar photovoltaic plant is integrated with the converter circuit to supply the required driving power of the circuit. integration of renewable energy to the present technology is much required amid present conventional energy crisis scenario. fig. 1 shows schematic representation of the proposed pv powered llc based fast charging technology with erc. the series parallel combination 75 watt, 12 volt solar modules comprises the solar array in this scheme. it acts as a solar power system as well as the primary source of energy, converting sunlight into direct current (dc) electricity. pv-based rapid charging and battery swapping station for small transport evs in rural areas... 473 fig. 1 a schematic representation of the proposed pv powered llc based fast charging technology with erc. the generated dc power is then processed by the buck-boost converter, which adjusts the voltage levels to align with the requirements of subsequent components. to ensure maximum energy utilization, the mppt (maximum power point tracking) controller continuously optimizes the power output of the solar array, adapting to varying sunlight conditions. the full-bridge converter performs the critical task of converting dc power into alternating current (ac), which is then directed to the llc resonant tank. this resonant tank facilitates efficient energy transfer by creating oscillatory waveforms. the transformer further adjusts the voltage to the desired level, ensuring it meets the load specifications. the ac output from the transformer is converted back into dc by the fullwave bridge rectifier for direct utilization. an energy recovery dc-dc cell [6] captures the ripple ac from the inductive filter placed at the output of the rectifier. the output of the rectifier consists of both dc and ripple ac parts. the dc output part is fetched as input to the battery for charging purpose. and the remaining ripple ac is fed back to the input section of the full bridge converter circuit and stored in the bus capacitor for future use. lastly, the battery stores excess energy for future use, ensuring a reliable and stable power supply even during fluctuations in input or demand. 2. resonant llc converter: structure and functionality the resonant converter serves as a critical component in the system, composed of an inductor (lr) and a capacitor (cr) that together form the resonant tank circuit. this circuit is designed to enable efficient energy transfer to the load via a transformer. by facilitating smooth current flow within the circuit, the resonant tank enhances stability and performance. the system begins by converting the dc input into a square wave through a switching bridge network. this network uses a full-bridge design, employing four metal-oxidesemiconductor field-effect transistors (mosfets) to efficiently produce the square wave signal. the square wave is then passed through the resonant llc tank, which acts as a harmonic filter. the primary purpose of the resonant llc tank is to remove unwanted harmonics from the square wave signal, delivering nearly sinusoidal voltage and current. the llc resonant converter is distinguished by its high efficiency and reduced switching losses, achieved through the implementation of zvs. the technique zvs ensures that switching transitions occur when the voltage across the switch is zero, significantly minimizing energy losses [5, 6]. 474 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. by integrating the resonant converter, switching bridge network, and transformer, the system achieves an efficient dc-to-ac conversion process. the resonant llc tank not only filters harmonics but also generates high-quality ac signals. the transformer ensures both voltage adjustment and electrical isolation, making the system safer and more reliable. this architecture is well-suited for applications that demand efficient power conversion, such as renewable energy systems, industrial equipment, and high-power electronic devices [7, 8]. 2.1. the rectifier stage in the llc resonant converter the rectifier stage in the llc resonant converter utilizes a full-bridge diode configuration to convert the high-frequency ac signal from the transformer into a unidirectional dc voltage. this arrangement comprises four diodes (d1, d2, d3, and d4), strategically connected to handle both positive and negative half-cycles of the ac waveform [9] [10] [11] [12] [13]. the rectifier thus converts the bipolar ac waveform into a pulsating dc output, which contains significant ripple components that require further filtering [14]. the output capacitor (c₀) is positioned downstream of the rectifier to smooth the pulsating dc signal into a stable dc output voltage. the capacitor plays two key roles: ripple filtering [15][16][17]. load stabilization: [18] [19]. 2.2. zvs technique zvs [20] [21] represents a significant advancement in the domain of power electronics, aimed at minimizing energy losses during the switching processes. this innovative technique ensures that switching devices, such as metal-oxide-semiconductor field-effect transistors (mosfets), are activated precisely when the voltage across them approaches zero. through precise timing and synchronization zvs effectively mitigates power dissipation during switching events, a prevalent drawback in conventional hard-switching methodologies. fig. 2 shows circuit diagram of prototype llc based fast charging system with erc. fig. 2 circuit diagram of prototype llc based fast charging system with erc the principle of zvs operation relies on the synchronization of the mosfet's activation with the instant at which the voltage across its terminals naturally falls to zero. this phenomenon is realized through the exploitation of circuit resonance, particularly in llc pv-based rapid charging and battery swapping station for small transport evs in rural areas... 475 resonant converters [22]. these converters employ a resonant tank, typically comprising an inductor (lr) and a capacitor (cr), to generate oscillatory waveforms. the resonance induced by the tank circuit ensures periodic fluctuations in the voltage across the mosfet, facilitating moments where the voltage reaches zero. the switching mechanism is strategically triggered during these intervals, thereby minimizing energy losses and enhancing system efficiency. 2.3. llc based converter fig. 3 output voltage of llc resonant convertor 1 1 2 r r r f l c = (1) equation (3), (4), (5), (6) & (7) indicates different parameters of a llc resonant convertor. 2 1 2 r m r r f l l c = + (2) ( )1 1 mx ac mx ac p ac mx ac rx rx mx ac l r l r v s v l r l c l r  + =  + + + (3) ( ) 2 1 2 2( ) mx r ac p ac m r r m r r ac m ac l c r s v s v l l c s l l c r s l s r    =    + +   +  + (4) 2 2 8 ac r r =  (5) 1 2 2 p in r v v  =  (6) 2 ac inv v=  (7) vac is the output voltage of the secondary winding of the transformer, vp1 is the output of the lcc resonant converter 476 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. 2.4. erc in llc resonant converters the energy recovery cell (erc), as an integral component in llc resonant converters, plays a pivotal role in enhancing energy efficiency by recovering and reutilizing energy that would otherwise be dissipated as losses. this feature is particularly critical in high-power conversion systems, where energy wastage can significantly impact performance and operational reliability [23],[24]. fig. 4 shows the hardware experimental set up of the proposed prototype system. fig. 4 hardware experimental set up of the proposed prototype system 3. battery swapping station 3.1. stages of bss operation the operation of battery swapping station follows certain rules. the bss should be stocked with sufficient numbers of fully charged battery, such that it can replace the newly entered discharged vehicles at any random time instant. initially, each ev drives the required power from its fully charged battery pack. once the battery gets depleted after providing service for the expected time span, it is queued in the charging section of bss. the batteries under charge get ready to serve the new entries of discharged evs. although the depleted batteries of a candidate discharged ev can be immediately replaced by freshly charged battery, the momentary charging of the fully discharged battery is not practically feasible as it requires considerable time as discussed earlier. this is the actual hindrance in deployment of ev in mostly rural as well as urban areas. this necessitated the researcher to look for a practical and economically viable solution of reducing battery charging time. pv-based rapid charging and battery swapping station for small transport evs in rural areas... 477 to avoid the out-of-stock scenario, the stock of the charged battery in any bss [25] should be greater than the numbers of entry of candidate discharged vehicles at any random time frame. the fully depleted batteries during charging time interval can also be employed in energy management system [26] [27]. charge scheduling of the batteries are executed in such a fashion that they can be incorporated as a source to inject power to the electric microgrid during peak load period. for sound operation of bss, a robust communication interface is critical between information system, ev and the bss [28]. usually wave communication establishes the bidirectional link between vehicles and information system. the information system accumulates the current location of the incoming vehicle and estimates their expected time of arrival. thus, information is shared with the bss through local internet. station prepared the new charged batteries to be added to the newly entered depleted ev [29]. as the vehicle reaches the bds, the depleted battery specification undergoes verification and then the vehicles are allowed to swap the battery. with aid of a robotic arm the battery replacement procedure is executed without delay. an accurate record of the user's payment , battery details, charge level, next probable scheduled charging time are stored in the cloud system for ease of tracking system. mobile app can help the ev user to track the nearest bss, raise requests etc. [30][31]. at the peak load condition, the charging batteries are utilized as an alternative power source to inject power to the grid. this generates additional revenue. for congestion-free operation of bss, first in first out (fifo) service is employed. 3.2. merits of bss 1. compared to other existing ev charging process, the bss assures uninterruptible service of ev and helps the user to give service without distraction, cost effective solution [32][33]. 2. charging of battery in off load period and injection of power during peak load enhances the load curve of the grid. as a result the electric system become much more efficient [33][34]. 3. sufficient stock of batteries in bss satisfies the customer’s need by reducing the waiting time [34][35]. 3.3. classification of battery swapping technology depending upon the battery position, the bs technology is classified into side swap, top swap, bottom swap, and rear swap. table 2 shows the vehicle & their swap position and any one or more than one number of techniques are used in a bss. table 2 vehicle & their swap position vehicle swap position car with large space rear bus top car bottom van, truck side ways 478 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. 4. layout of swap station and cost analysis a battery swapping station for a specific number of electric vehicles is a facility where discharged batteries in electric vehicles can be quickly replaced with fully charged ones. instead of waiting for a vehicle's battery to recharge, the driver swaps the depleted battery with a charged one, allowing for faster turnaround. the term "n electric vehicles" simply refers to the number of evs the station is designed to serve. fig. 5 shows the layout of a bss unit where charging and discharging of battery swapping fast charging station clearly visible with the help of a block diagram power by solar energy and system is totally off grid solar system. total estimated investment for a single charging unit of a bss is 8790 usd. the cost of establishing an ev charging station in india depends on several factors. one of the primary variables is the type of ev charger, as different chargers vary in price. another significant factor is the cost of land. if you already own the land, this expense is eliminated [36][37]. however, if you choose to lease land, the cost will vary depending on the location. additionally, obtaining an electricity connection for the charging station is necessary, and this cost differs across states. currently, many states in india offer subsidies to encourage the development of ev charging infrastructure. these subsidies help lower both the cost of acquiring an electricity connection and the overall expenses of setting up the ev charging station. this makes it an advantageous time to invest in ev charging infrastructure [38][39]. the costs associated with establishing an ev charging station are currently stable, primarily due to government initiatives providing substantial subsidies. these subsidies help offset the expenses of key high-cost components, making the setup process more affordable [40][41]. a significant factor influencing the overall cost is the price of land, which varies widely depending on location. fluctuations in land prices can significantly affect the total investment required for an ev charging station. additionally, electricity tariffs play a critical role in the operational and setup costs. variations in electricity rates can impact the overall expenditure and profitability of the charging station. manufacturers can generate revenue from your ev charging station through several methods: charging fees: the primary source of income will come from the fees customers pay to charge their electric vehicles at your station [42] [43]. advertising collaborations: partnering with outdoor advertising agencies can provide additional revenue by leasing space at your station for advertisements [44]. retail opportunities: establishing a convenience store, cafe, or other retail outlets near the charging station can attract customers who want to shop or relax while waiting for their evs to charge [45][46]. these strategies are widely adopted by ev charging station operators across the country. in summary, your revenue streams can be categorized into three main areas: fees from charging services, income from advertising, and earnings from ancillary spending opportunities created for customers during their wait times [47][48]. 5. result and analysis in the result and analysis section, variation of open circuit voltage of the 12v battery used in the present case, standard open circuit voltage of battery bank and measured open circuit voltage from the battery unit with respect to quantity of the charge are shown in pv-based rapid charging and battery swapping station for small transport evs in rural areas... 479 table 3. table 4 depicts the comparative analysis of charging time of prototype fast charging method with the conventional charging method. the state of charge (soc) of a vrla battery is determined using the battery unit's specified open-circuit voltage and the measured voltage after charging by using prototype charging system. table 3 variation of open circuit voltage of single unit 12 v battery, standard open circuit voltage and measured open circuit voltage from the battery unit with soc quantity of charge (%) open circuit voltage (v) of 12 volt battery standard open circuit voltage (v) of battery bank as per specified value measured open circuit voltage (v) from battery unit 100 12.51 48 49.55 90 12.33 48 49. 23 80 12.27 48 49.11 70 12.19 48 48.76 60 12.08 48 48.62 50 11.83 48 48.25 from the above table it is observed that the single battery with 50 % soc can give 11.83v output voltage. the output voltage rises upto 12.51v with full charging level. fig. 6 shows plot of standard open circuit voltage of battery bank versus quantity of charge (%). the standard open circuit voltage of the battery bank consisting of 4 units of 12 v battery (vrla) is 48v. the measured value of open circuit voltage of the battery bank is found to vary from 48.25 volt to 49.55 volt with the corresponding variation in charging level from 50 % to 100 %. figure 6 indicates plot of standard open circuit voltage of battery bank versus quantity of charge (%). fig. 7 shows plot of measured open circuit voltage versus quantity of charge (%) quantity of charge (%). fig 8 shows the plot of open circuit voltage of 12 v battery versus quantity of charge. fig. 6 plot of standard open circuit voltage of battery bank versus quantity of charge (%). 480 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. fig. 7 plot of measured open circuit voltage versus quantity of charge (%) quantity of charge (%). fig. 8 plot of open circuit voltage of 12 v battery versus quantity of charge the charging time of a vrla battery is evaluated using both the traditional charging method and the proposed prototype fast charging technique. table 4 comparative analysis of charging time of prototype fast charging method with the conventional charging method. vrla battery charging level (%) charging time with conventional method (hours) charging time with prototype fast charging method (hours) 50 4.0 2.5 60 4.5 3 70 5.0 3.5 80 5.5 4 90 6.5 4.5 100 7.5 5 pv-based rapid charging and battery swapping station for small transport evs in rural areas... 481 from table 4 it is observed that the time required to charge the battery with 100 % charge is 5 hours, whereas the time taken by the conventional charging system is 7.5 hours. thus, it can be concluded that the present prototype system can save up to 2.5 hours’ time duration to fully charge the battery. fig. 10 shows plot of vrla battery charging level (%) versus charging time (hours) fig. 9 plot of vrla battery charging level (%) versus charging time (hours) 5.1. economic analysis and savings a field survey is conducted to evaluate the present scenario of ev deployment in rural bengal (mention area). the survey report gives an estimation of the revenue earned by each ev operator. it is evident from the survey report that the high charging time and scarcity of proper battery charging infrastructure in these areas suppresses the chance of the maximum earning of the ev operator. a sample economic analysis of the revenue earned by each ev operator is given below: each ev operator earns rs 70 per hour. approximate working day per month can be 25 days. with the existing battery charging infrastructure, the total battery charging duration is 7 to 8 hours. if the existing technology is upgraded with pv powered llc full bridge resonant converter system, the charging time is considerably reduced to 4.5 hours approximately. however, this time-span is still high as the ev owner has to remain idle for this duration of time. the vehicle dormant time is directly reflected in the economic loss of the ev owner. thus, integration of the bss with the converter based charging technology fills up the gap of the system by providing a quick replacement of the depleted batteries with fully charged stored batteries already present in the station. thus, the dormant period drastically reduces to few minutes. this mechanical refueling of battery by screwing and unscrewing of mechanical nuts and bolts merely takes 10 minutes to complete the whole task. so, it is evident that the downtime of the ev can upgrade significantly and can save at least 7 working hours. therefore 70 inr /hr x 7 hours = 490 inr can be saved per day. savings per month will be 490 x 25(inr) working days =12, 250(inr) per month. moreover, utilization of solar energy in the proposed fast charging technology makes it more compatible with rural environment. 482 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. 5.2. tabulation of cost analysis of single unit bss table 5 shows the cost analysis of a single unit bss. table 5 cost analysis of a single unit bss cost component description estimated cost range (inr) infrastructure costs land acquisition, civil works, construction, and permits. 1,50000 battery unit costs initial purchase of swappable batteries (varies with type/capacity). 70,000 charging equipment battery chargers, power electronics, and transformers. 12,000 battery swapping system robotic arms/mechanisms for automated battery swapping. 45,000 energy storage system optional on-site energy storage (e.g., lithium-ion battery packs). 10,000 solar power plant cost solar panels or wind turbines for renewable power generation (optional). 1,25000 maintenance equipment tools and spare parts for regular station upkeep. 30,000 miscellaneous costs marketing, legal fees, and other administrative expenses. 10,000 the overall cost of this proposed plant; 4,52000 (inr) 6. conclusion in this present research work, a fast charging technology powered from pv source is proposed. the main objective of this present work is to reduce the battery charging time and upgrade the total active-duty period of each ev. it has been observed in the result and analysis section that to attain 100% soc, the time required by the proposed technology is 5 hours, whereas the conventional method takes 7.5 hours duration to do the same. thus, saving charging duration by 2.25 hours is a considerable advancement in the charging technology. however, 5 hours waiting period to fully charge the battery is yet another limitation of the charging technology, as it is reflected as an economic loss of the ev operator. thus to provide an immediate solution, bss is incorporated with the present proposed scheme. this bss mechanically refuels the batteries within 10 minutes and helps to maintain the uninterrupted ev service. as discussed in section 3.2, an ev operator can save up to inr 12,250 per month by availing the bss technology. integration of pv energy and bss technology with llc based full bridge resonant converter with erc can be considered as an advancement in the overall performance of the ev battery charging technology in rural bengal. however, iot based implementation of the proposed technique remains unexplored. the exploration of the proposed technology with the aid of iot will further upgrade the technology to an advanced edge. simultaneous monitoring and control of the soc and battery replacement of large numbers of ev will become more convenient by incorporating iot with the present scheme. pv-based rapid charging and battery swapping station for small transport evs in rural areas... 483 references [1] m. a. rajaeifar, p. ghadimi, m. raugei, y. wu and o. heidrich, "challenges and recent developments in supply and value chains of electric vehicle batteries: a sustainability perspective" resources, conservation and recycling, vol. 180, p. 106144, may 2022. [2] y. wei, q. luo and a. mantooth, "overview of modulation strategies for llc resonant converter", ieee trans. power electron., vol. 35, no. 10, pp. 10423-10443, 2020. [3] r. s. balog and a. davoudi, "batteries, battery management, and battery charging technology". in electric, hybrid, and fuel cell vehicles, new york, ny: springer new york, pp. 315-352, 2021. [4] b. bhattacharjee, p. k. sadhu, a. ganguly and a. k. naskar, "photovoltaic energy based fast charging strategy for vrla batteries in small electric vehicles for sustainable development", microsyst. technol., vol. 30, no. 2, pp. 141-153, 2024. [5] a. m. vallera, p.m. nunes and m.c. brito, "why we need battery swapping technology", energy policy, vol. 157, p. 112481, 2021. [6] h. wu, "a survey of battery swapping stations for electric vehicles: operation modes and decision scenarios", ieee trans. intell. transp. syst., vol. 23, no. 8, pp. 10163-10185, 2021. [7] d. cui, z. wang, p. liu, s. wang, d. g. dorrell, x. li and w. zhan, "operation optimization approaches of electric vehicle battery swapping and charging station: a literature review", energy, vol. 263, p. 126095, 2023. [8] y. t. chen, s. m. shiu and r. h. liang, "analysis and design of a zero-voltage-switching and zerocurrent-switching interleaved boost converter", ieee trans. power electron., vol. 27, no. 1, pp. 161173, 2011. [9] m. evstigneev, "metal–oxide–semiconductor field effect transistor (mosfet)", in introduction to semiconductor physics and devices, cham: springer international publishing, pp. 233-255, 2022. [10] r. l. lin and l.h. huang, "efficiency improvement on llc resonant converter using integrated lclc resonant transformer", ieee trans. ind. appl., vol. 54, no. 2, pp. 1756-1764, 2017. [11] d. sbordone, i. bertini, b. d. pietra, m. c. falvo, a. genovese and a. l. martirano, "ev fast charging stations and energy storage technologies: a real implementation in the smart micro grid paradigm", electr. power syst. res., vol. 120, pp. 96-108, 2015. [12] j. jannatkhah, b. najafi and h. ghaebi, "energy and exergy analysis of combined orc–erc system for biodiesel-fed diesel engine waste heat recovery", energy convers. manag., vol. 209, p. 112658, 2020. [13] m. pahlevaninezhad, p. das, j. drobnik, p. k. jain and a. bakhshai, "a novel zvzcs full-bridge dc/dc converter used for electric vehicles", ieee trans. power electron., vol. 27, no. 6, pp. 27522769, 2011. [14] h. wu, g. k. h. pang, k. l. choy and h. y. lam, "an optimization model for electric vehicle battery charging at a battery swapping station", ieee trans. veh. technol., vol. 67, no.2, pp. 881-895, 2017. [15] d. lee and c. c. cheng, "energy savings by energy management systems: a review", renew. sustain. energy rev., vol. 56, pp.760-777, 2016. [16] j. zhang, w. jian, t. jiang, s. shao, y. sun, b. hu and j. zhang, "a three-port llc resonant dc/dc converter" ieee j. emerg. selected top. power electr., vol. 7, no. 4, pp. 2513-2524, 2019. [17] b. sahu and g. a. rincon-mora, "a low voltage, dynamic, noninverting, synchronous buck-boost converter for portable applications", ieee trans. power electron., vol. 19, no. 2, pp. 443-452, 2004. [18] b. subudhi and r. pradhan, "a comparative study on maximum power point tracking techniques for photovoltaic power systems," ieee trans. sustain. energy, vol. 4, no. 1, pp. 89-98, 2013. [19] f. bahraini, a. abrishamifar and a. ayatollahi, "fast dc bus voltage regulation for a low cost singlephase grid-connected pv microinverter with a small dc bus capacitor", in proceedings of the 11th power electronics, drive systems, and technologies conference (pedstc), teheran, iran, 2020, pp. 1-6. [20] p. bhargavi, p. c. v. chaganti, v. sowmya, p. v. manitha and s. lekshmi, "a comparative study of phase shifted full bridge and high-frequency resonant transistor dc-dc converters for ev charging application", in proceedings of the ieee 2nd international conference on mobile networks and wireless communications (icmnwc), tumkur, karnataka, india, 2022, pp. 1-6. [21] y. wei, q. luo, d. woldegiorgis, h. mhiesan and a. mantooth, "characteristics analysis of llc and lcl-t resonant tank", in proceedings of the ieee transportation electrification conference & expo (itec), chicago, il, usa, 2020, pp. 427-432. [22] c. e. sheridan, m. m. c. merlin and t. c. green, "assessment of dc/dc converters for use in dc nodes for offshore grids", in proceedings of the 10th iet international conference on ac and dc power transmission (acdc 2012), birmingham, 2012, pp. 1-6. 484 b. bhattacharjee, s. mukherjee, r. bhattacharjee, s. bhattacharjee, et al. [23] a. maheshwari, f. karakaya, a. banerjee and j. s. donnal, "control architecture for llc resonant converters with high input disturbance rejection capability using output diode current", ieee trans. power electron., vol. 40, no. 1, pp. 652-664, jan. 2025. [24] j. cui, z. liu, j. zhang and y. ma, "design of dc/dc power supply based on dual loop fixed frequency control strategy", in proceedings of the 6th asia energy and electrical engineering symposium (aeees), chengdu, china, 2024, pp. 152-156. [25] k.-w. heo and j.-h. jung, "output voltage compensation using second harmonic ripple in a twostage converter with spread spectrum modulation", ieee trans. power electron., vol. 39, no. 12, pp. 16306-16316, 2024. [26] k.-w. heo, h.-j. choi, h.-p. park, m. kim, j. kim and j.-h. jung, "spread spectrum modulation under second harmonic distortions in two-stage converters", in proceedings of energy conversion congress & expo europe (ecce europe), darmstadt, germany, 2024, pp. 1-5. [27] z. li et al., "an accurate, universal, and fast time domain model for different types of resonant converters by considering parasitic capacitors and deadtime", ieee trans. power electron., vol. 40, no. 1, pp. 1305-1321, 2025. [28] k. zhou and y. wu, "research on two-stage on-board charging system based on ipop llc resonant converter," int. j. electr. hybrid veh., vol. 16, no. 1, pp. 37-52, 2024. [29] s. derakhshan and j. lam, "a new half-bridge/dual-stacked-switches structured electrolytic capacitor-less ac/dc bi-directional on-boad charger for high-voltage ev battery", in proceedings of ieee energy conversion congress and exposition (ecce), phoenix, az, usa, 2024, pp. 3188-3194. [30] x. liu, j. wang, j. yao, j. xie, q. zhang and a. tulahong, "a simplified average magnetizing current control for dc-dc current-source soft-switching solid-state transformer", in proceedings of the 7th international conference on electrical engineering and green energy (ceege), los angeles, ca, 2024, pp. 55-61. [31] k. zhou, x. zheng and y. liu, "research on cascaded on-board dc/dc converter based on threephase interleaved llc," int. j. circuit theory appl., accepted for publication, 2024. [32] s. fan et al., "an improved interleaved dc-dc converter with zero voltage switching operation", in proceedings of ieee transportation electrification conference and expo, asia-pacific (itec asiapacific), bangkok, thailand, 2018, pp. 1-5. [33] y. wei, q. luo and a. mantooth, "a hybrid half-bridge llc resonant converter and phase shifted full-bridge converter for high step-up application", in proceedings of ieee workshop on wide bandgap power devices and applications in asia (wipda asia), suita, japan, 2020, pp. 1-6. [34] d. fu, f. c. lee, y. liu and m. xu, "novel multi-element resonant converters for front-end dc/dc converters", in proceedings of ieee power electronics specialists conference, rhodes, greece, pp. 250-256, 2008. [35] y. wei, q. luo and h. a. mantooth, "a resonant frequency tracking technique for llc converterbased dc transformers", ieee j. emerg. sel. top. ind. electron., vol. 2, no. 4, pp. 579-590, 2021. [36] z. li, e. hsieh, q. li and f. c. lee, "high-frequency transformer design with medium-voltage insulation for resonant converter in solid-state transformer", ieee tran. power electron., vol. 38, no. 8, pp. 9917-9932, 2023. [37] l. liu, s. bala and f. canales, "stacked dc-dc converter with wide voltage range", in proceedings of ieee energy conversion congress and exposition (ecce), baltimore, md, usa, 2019, pp. 1401-1407. [38] h. liu, c. li, z. zheng, j. liu and y. li, "shunt isolated active power filter with common dc link integrating braking energy recovery in urban rail transit," ieee access, vol. 7, pp. 39180-39191, 2019. [39] j. kucka and d. dujic, "current limiting in overload conditions of an llc-converter-based dc transformer" ieee trans. power electron., vol. 36, no. 9, pp. 10660-10672, 2021. [40] f. xue, r. yu and a. q. huang, "a 98.3% efficient gan isolated bidirectional dc–dc converter for dc microgrid energy storage system applications", ieee trans. ind. electron., vol. 64, no. 11, pp. 90949103, 2017. [41] h.-s. kim, j.-w. baek, m.-h. ryu, j.-h. kim and j.-h. jung, "the high-efficiency isolated ac–dc converter using the three-phase interleaved llc resonant converter employing the y-connected rectifier", ieee trans. power electron., vol. 29, no. 8, pp. 4017-4028, 2014. [42] y. wei, q. luo and h. a. mantooth, "llc and cllc resonant converters based dc transformers (dcxs): characteristics, issues, and solutions," cpss trans. power electron. appl., vol. 6, no. 4, pp. 332-348, 2021. [43] f. liu, x. ruan and y. jiang, "resonant peak suppression approaches for improving the dynamic performance of dcx-llc resonant converter based two-stage dc–dc converter", ieee trans. ind. electron., vol. 70, no. 6, pp. 5685-5695, 2023. pv-based rapid charging and battery swapping station for small transport evs in rural areas... 485 [44] j. zeng, g. zhang, s. yu, and b. zhang, "llc resonant converter topologies and industrial applications—a review," chin. j. power electron., vol. 14, no. 3, pp. 183-194, 2020. [45] x. fang, f. chen and h. hu, "efficiency-oriented optimal design of the llc resonant converter based on peak gain placement", ieee trans. power electron., vol. 27, no. 4, pp. 1643-1651, 2012. [46] x. zhou, l. wang and y. gan, "accurate analysis and design of the circuit parameters of llc dc–dc converter with synchronous rectification", ieee trans. power electron., vol. 37, no. 5, pp. 4423-4434, 2022. [47] h. watanabe, j. itoh, n. koike and s. nagai, "pv micro-inverter topology using llc resonant converter", energies, vol. 12, no. 16, pp. 1-12, 2019. [48] g. yang, p. dubus and d. sadarnac, "double-phase high-efficiency, wide load range high-voltage/lowvoltage llc dc/dc converter for electric/hybrid vehicles", ieee trans. power electron., vol. 29, no. 7, pp. 3668-3679, 2014. 10486 facta universitatis series: electronics and energetics vol. 35, no 3, september 2022, pp. 421-435 https://doi.org/10.2298/fuee2203421m © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper control of series impedance of power lines using power flow controller aleksandar aco marković1,2, slobodan vukosavić2,3 1university of banja luka, faculty of electrical engineering, banja luka, republic of srpska, bosnia and herzegovina 2university of belgrade, faculty of electrical engineering, belgrade, serbia 3serbian academy of sciences and arts, belgrade, serbia abstract. in this paper, the possibility of unified power flow controller (upfc) to modulate both series resistance r and series reactance x of an overhead power line is discussed. the classical power flow control system of the ufpc is modified in the manner that standard input references signals (active and reactive powers) are replaced by reference signals of series resistance and reactance. using the procedure described in this work, the reference signals for active and reactive powers are generated indirectly. the operation of upfc in proposed operation mode is analyzed using computer simulation, based on a model of single machine infinite bus (smib) with constant impedance loads and two parallel lines. the goal is to show that upfc is capable to control both series line parameters (r and x) directly and independently by means of a simple control system without additional decoupling controllers. an additional task is to show that power flows can be indirectly controlled this way. the step response of series line resistance and reactance is used to validate the operation of the proposed control system. the obtained results clearly show that all goals are fulfilled. key words: unified power flow controller, impedance regulation, power system, power flows 1. introduction with introduction of variable sources in ac grids, with electronically controlled loads, integrity of the grid is challenged by reduced system inertia, limited support for transients from power electronics devices, and with quite new and different static and dynamic properties of the sources and loads that interface the ac grid through grid side inverters. at the same time, electric power required to run the internet and digitalization is rising steadily, while the process of decarbonization of the transport by means of electrification requires further increase in electric energy demand. these growing trends have great received february 16, 2022; revised april 4, 2022; accepted may 25, 2022 corresponding author: aleksandar aco marković university of banja luka, faculty of electrical engineering, 5 patre, banja luka, 78 000 banja luka, republic of srpska, bosnia and herzegovina e-mail: aleksandar-aco.markovic@etf.unibl.org 422 a. a. marković, s. vukosavić impact on power system which must respond on increasingly complex requirements. some of these requirements are: the response time of the system, stability margin and quality of electrical energy delivered to the consumer. to fulfill all the requests, flexible alternating current transmission system (facts) devices are introduced into the system. the most complex and the most substantial device of all facts is unified power flow controller (upfc). the main reason for introduction of upfc into the system is the need for independent control of active and reactive power flows in power systems [1]. currently, upfcs are mostly used in two different operation modes: either voltage and power flow control mode or active power oscillation reduction mode. there are a lot of proposed algorithms for both operation modes. control algorithms for voltage and power flow control are often based on proportional – integral (pi) controllers. the simplest control system is described in dq – reference frame and it generates the desired upfc voltage reference out of the acquired feedback signals [2]. the feedback signals are usually line currents as well as active and reactive powers. there are several similar control systems with only a small difference between them in their parameter setting for achieving better performance or faster response [3-5]. however, some authors prefer using several feedback signals (up to three) to achieve better performance and faster stabilization [6],[7]. this way, several pi controllers are connected in cascade, thus reducing the phase margin with negative impact on stability and robustness. these problems are not discussed in literature. besides pi controller, some novel approaches are discussed too, such as fuzzy controllers and neural networks. these types of controllers are suitable for nonlinear systems like power system. fuzzy controllers are used in hybrid version, where only p control of pi controller is fuzzy – based and everything else is classical pi control [8]. more complex approach uses complete pi controller based on fuzzy logic [9 11]. it is noted that fuzzy based control schemes provide faster response, on the account of a rather complex and involve selection of suitable membership function types and domains, mostly performed on trial-and-error bases, rather than using exact mathematical procedure which would lead to predictable results. additionally, said algorithms can be numerically extensive. neural networks are also an option for upfc control. usually, simple algorithms based on radial basis neural networks using a single neuron in hidden layer with gaussian activation function are used [8]. there is also a hybrid version of controller which uses classical pi control combined with neural network. neural network based on back propagation error, uses deviation of variables of interest to generate the output which is summarized with the outputs of pi controllers [12]. the latest approach is to use neural network based controllers to generate auxiliary signals for active power oscillations reduction [13]. this way faster response and attenuation of active power oscillations can be achieved. however, these algorithms have also several shortcomings. their main disadvantage is that their stability cannot be mathematically proven [14] and they are rather complex for practical implementation. it can be seen that almost all algorithms in relevant literature use active and reactive power and nominal bus voltage as reference signals. some modifications of these algorithms use d and q axes currents which are calculated using active and reactive power references. there are some attempts to use upfc for reactance control [6], [15], [16]. however, in these works upfc is used only as a shunt device, so it is not capable of controlling resistance in this operation mode. sometimes, the term “impedance control” is used to describe reactance control, as it is explained in [17]. authors didn’t find any relevant literature dealing with the use of upfc for independent control of series line resistance and reactance. control of series impadance of power lines using power flow controller 423 in this paper, control solution is proposed where series resistance r and series reactance x are treated as reference signals, while the upfc performs complete emulation of the series impedance. this means that upfc generates the appropriate voltages to maintain series resistance and reactance on desired levels, thus exploiting the whole potential of the upfc hardware. 2. topology and mathematical model of upfc in this section topology of standard upfc system is discussed. additionally, mathematical model of upfc suitable for series power line impedance modulation is derived based on classical power flow upfc model. all mathematical equations are self – driven based on proposed equivalent schemes. 2.1. upfc topology topology of an upfc device is shown in fig. 1. fig. 1 topology of upfc in fig. 1, upfc is connected on bus k, and it can control power flow between buses k and k+1, along the power line with impedance zt. this device constitutes of two power converters (pc1 and pc2), which operation is based on power electronics switching devices. the first upfc, installed in the usa, used gate turn – off (gto) thyristors as switching devices, which operated on grid frequencies. latest upfcs, installed in china, use insulated gate bipolar transistors (igbt) as switching devices, combined in modular multilevel converters (mmc) and they operate on frequencies near 1[khz] [18],[19]. in upfc topology, two power transformers are obligatory (tr1 and tr2, fig. 1). shunt transformer (tr1) is a classical power transformer. series transformer (tr2) has much more complicated construction since it has to withstand line current and sometimes even short circuit currents for a small fraction of time. auxiliary transformers (atr1 and atr2, fig. 1) are not always necessary. they are usually used in cases when gtos are used in power converters to create appropriate phase shift. series transformer (tr2) and series converter (pc2) create series part of upfc which is called static series synchronous compensator (sssc). shunt transformer (tr1) and shunt 424 a. a. marković, s. vukosavić converter (pc1) together create the shunt part of upfc which is called static compensator (statcom). these two devices can operate separately from each other. however, when dc switch (dcs) is closed, shunt and series part share the same dc link and that configuration is called upfc. in this configuration, it is possible to achieve more complex control tasks than using statcom and sssc independently. 2.1. upfc mathematical model to describe upfc more precisely, the equivalent scheme shown in fig. 2.a can be observed. fig. 2 a – upfc equivalent scheme, b – phasor diagram variables uk and uk+1 represent complex voltages on busbars k and k+1, respectively. complex voltage use denotes series voltage inserted into the power line through the series power transformer. complex voltage ush is generated using shunt transformer. modified voltage phasor on sending end u’k represents vector sum of voltages uk and use. impedance zsh describes shunt impedance of upfc while zt is transmission power line series impedance. line current i flows through series transformer and current ish flows through shunt part of upfc, supplying the dc link with appropriate energy. in order to see how upfc generated voltages use and ush influence on power system operation, apparent power on sending end can be observed (1). 𝑆𝑘 = 𝑈𝑘 ′ 𝐼∗ = 𝑈𝑘 ′ ( 𝑈𝑘 ′ − 𝑈𝑘+1 𝑍𝑇 ) ∗ (1) according to the phasor diagram (fig. 2b), voltages can be expressed using their effective values and phases (2). 𝑈𝑘 = 𝑈𝑘𝑒 𝑗𝛿𝑘, 𝑈𝑘+1 = 𝑈𝑘+1𝑒 𝑗𝛿𝑘+1 , 𝑈𝑠𝑒 = 𝑈𝑠𝑒𝑒 𝑗𝛿𝑠𝑒 (2) substituting (2) into (1), using previously explained condition uk ’ = ukejδk+1 + useejδse equation (1) becomes (3). 𝑆𝑘 = 𝑈𝑘 ′2 𝑅𝑇−𝑗𝑋𝑇 − 𝑈𝑘𝑈𝑘+1𝑒 𝑗(𝛿𝑘−𝛿𝑘+1)+𝑈𝑘+1𝑈𝑠𝑒𝑒 𝑗(𝛿𝑠𝑒−𝛿𝑘+1) 𝑅𝑇−𝑗𝑋𝑇 (3) real and imaginary part of (3) are given with (4) and (5), respectively. for simplicity, resistance r is neglected because the ratio x/r for high voltage power lines is control of series impadance of power lines using power flow controller 425 approximately 1/11 for 400[kv] power lines. further, the appropriate phases are expressed as δ = δk – δk+1, δ’ = δse – δk+1. 𝑃 = 𝑈𝑘𝑈𝑘+1 𝑋𝑇 sin(𝛿) + 𝑈𝑠𝑒𝑈𝑘+1 𝑋𝑇 sin(𝛿′) = 𝑓(𝑈𝑠𝑒 , 𝛿𝑠𝑒) (4) 𝑄 = 𝑈𝑘 ′2 𝑋𝑇 − 𝑈𝑘𝑈𝑘+1 𝑋𝑇 cos(𝛿) − 𝑈𝑠𝑒𝑈𝑘+1 𝑋𝑇 cos(𝛿′) = 𝑓(𝑈𝑠𝑒 , 𝛿𝑠𝑒) (5) equations (4) and (5) represent active and reactive powers on sending end, respectively. it can be noted that these equations are function of effective value of series voltage use, and its phase δse. active power p can be dominantly controlled by generating appropriate phase δse while reactive power q is controlled by generating adequate series voltage amplitude. the importance of upfc lies in fact that effective value of series voltage use can be changed from zero to its maximal value use,m and the series voltage phase δse can be changed from 0 to 2π. this is possible only because two power controllers share the same dc link. in power control mode of operation, shunt part of upfc is used for delivering the energy for series part. active power exchanged between two converters is denoted as pex. it should be pointed out that reactive power cannot be transferred through the dc link. so, every converter has to generate or absorb the reactive power locally. shunt part is also used for keeping the k bus voltage amplitude at desired level, which is done by absorbing or injecting reactive energy. additionally, this part of upfc is used for controlling the dc link voltage by controlling exchanged active power pex. apparent power generated or absorbed by shunt part ssh can be expressed by (6). 𝑆𝑠ℎ = 𝑈𝑘𝐼𝑠ℎ ∗ = 𝑈𝑘 ( 𝑈𝑘−𝑈𝑠ℎ 𝑍𝑠ℎ ) ∗ (6) real part of (6) represents the shunt active power psh and imaginary part is shunt reactive power qsh. model of dc link can be described by (7). 𝑃𝑒𝑥 = 𝑃𝑠ℎ − 𝑃𝑠𝑒 = 𝑖𝐶𝑢𝐷𝐶 = 𝑢𝐷𝐶𝐶 𝑑𝑢𝐷𝐶 𝑑𝑡 (7) in (7) pse represents active power generated by series part of upfc, ic is current flowing through the dc link capacitor, udc is dc link voltage and c represents capacitor capacitance. traditionally, control of upfc is done by generating appropriate series use and shunt ush voltages. these voltages are generated by the control system (fig 1.), which goal is to regulate active and reactive powers as well as nominal voltage on k-th busbar. 3. proposed control scheme the main idea for control system is to use desired values of line resistance and reactance as reference signals. these signals are further to be used to calculate appropriate references for active and reactive powers. to accomplish this idea, the control system of the series part of upfc should be modified, while the control system of the shunt part of upfc can be kept the same relative to the standard control systems of upfc used in power flow control mode of operation. 426 a. a. marković, s. vukosavić 3.1. upfc series part control scheme unlike previously described classical control schemes, upfc can also be used in impedance control operation mode. to formulate the control low, the equivalent scheme shown in fig. 3 can be observed. fig. 3 upfc equivalent scheme for impedance control operation mode in this case, series part of converter can be observed as variable impedance z, unlike the classical study where the series part is represented by voltage source (fig. 2a). line current i should remain the same, independently of equivalent scheme (fig. 2a or fig. 3). line current form fig. 3 can be expressed by (8). 𝐼 = 𝑈𝑘+𝑈𝑠𝑒−𝑈𝑘+1 𝑍𝐿 (8) in this case, voltage vector use can be varied, while zt is constant. line current calculated using equivalent scheme from fig. 3 is given by (9). 𝐼 = 𝑈𝑘 − 𝑈𝑘+1 𝑍𝑒 (9) in case of (9), ze is equivalent line impedance, expressed as sum of variable part of impedance z and fixed impedance zt. these currents, expressed by (8) and (9), should be equal. from this equality, the expression for variable part of impedance can be easily obtained (10). 𝑍 = − 𝑈𝑠𝑒 𝐼 (10) variable impedance z is expressed using series injection voltage 𝑈𝑠𝑒 and line current i, which can be measured in a real power system. apparent power on power line, according the fig. 3, is expressed by (11). 𝑆𝑘,𝑟𝑒𝑓 = 𝑈𝑘 ( 𝑈𝑘 − 𝑈𝑘+1 𝑍𝑒,𝑟𝑒𝑓 ) ∗ = 𝑃𝑟𝑒𝑓 + 𝑗𝑄𝑟𝑒𝑓 (11) equation (11) shows that referent values for active and reactive power pref and qref, respectively, can be expressed indirectly by assigning referent values for equivalent impedance ze. calculated power references pref and qref are to be compared with measured control of series impadance of power lines using power flow controller 427 active and reactive powers given by (4) and (5). active power signal error represents input for pi controller (pi1, fig. 4.a), which output is imaginary part useq of complex voltage vector use. reactive power signal error feeds another pi controller (pi2, fig. 4.a), which output represent the real part used of complex voltage vector use. control scheme of series part of upfc is shown in fig. 4.a. fig. 4 a. upfc series part control scheme, b. upfc shunt part control scheme 3.2. upfc shunt part control scheme for proposed control scheme, based on impedance control, shunt part can be controlled classically. that means, shunt part complex voltage is generated using two pi controllers. the complete control scheme of shunt part of upfc is shown in fig. 4.b. the first pi regulator (pi3, fig. 4.b) is used to generate the real part ushd of complex voltage ush. this regulator is fed by error signal which is generated as difference between reference dc link voltage udc,ref and measured dc link voltage udc, which is obtained using (7). imaginary part ushq of complex voltage vector ush is generated using pi controller (pi4, fig. 4.b), which input signal is difference between referent (usually nominal) voltage on bus k uk,ref and measured voltage uk. controllers used in control schemes (fig. 4) are discrete type pi controllers in positional form with anti-windup mechanism (fig. 5). fig. 5 discrete type pi controller with anti-windup mechanism in fig. 6 signals f and y represent input and output signals, respectively. parameters kp and ki are proportional and integral gains, respectively, while parameter kc is calculated as ratio ki/kp. sampling time is denoted as t. all control parameters are given in appendix a. 428 a. a. marković, s. vukosavić 4. test system model operation of upfc in impedance control mode is tested by means of computer simulation, on a simple power system, showed in fig. 6. the system is classical single – machine infinite bus system with parallel lines. this type of system is widely used for demonstration of upfc performance by means of power regulation and active power oscillation suppression [20 – 23]. fig. 6 test system model model of the test power system (fig. 6) consists of four buses. buses 1 and 4 are generator buses whereby the bus 1 is slack bus. buses 1 and 2 are connected by means of power lines having impedances zt1 and zt4, respectively. buses 2 and 3 are connected by means of parallel lines with impedances zt2 and zt3. constant impedance loads are connected to buses 2, 3 and 4, and their impedances are denoted as zl1, zl2 and zl3, respectively. unified power flow controller is connected to the bus 2, in series with power line which impedance is zt2. thus, upfc will be used for control of impedance on this power line and simultaneously for controlling bus 2 voltage amplitude. power generator g1 (fig. 6) is slack generator, so it is modeled as constant voltage source with nominal voltage. detailed model of generator g2 is given in [24]. it consists of models of electrical and mechanical subsystems suitable for observation of transient and steady state periods. excitation system of this generator is modeled as standard type 1 ieee excitation system. system frequency controller is integral type controller, while turbine controller is modeled as widely used first order system with droop characteristics. power lines are described by their series impedances, where the shunt parts of the power lines are neglected. all loads are modeled as constant impedance loads. parameters of the test system model are given in appendix b and they are represented in per unit system with respect to base power 100[mva] and base voltage 220[kv]. 5. simulation results in order to explore the possibility of upfc to control series line impedance, computer simulation is created in matlab, simulnik. simulation is prepared according to the test system model (fig. 6) and upfc mathematical model, described in section iii. the simulation is divided into nine time segments (t1 – t9), and each of them lasts for 5[s]. the first time interval t1 starts at the time t1 = 10[s] and lasts until the time t2 = 15[s], and the last one t9 starts at the time t8 = 50[s] and lasts until the end of the simulation, control of series impadance of power lines using power flow controller 429 which is 55[s]. all time intervals are shown in fig. 7. the simulation results are observed form the time t1 = 10[s] in order to get clearer results and to skip the transient period. the aim of this simulation is to show the possibility of upfc to independently regulate line resistance and reactance. in order to investigate the great majority of all possible outcomes, different references of x and r are generated in every time interval. these are represented by step changes. the step responses of measured resistance (black) and reactance (blue) of line 2 are given in fig.7. dashed traces in fig. 7 represent nominal line parameters, when no compensation is done, that is re,ref=rt2=0.03[p.u] and xe,ref=xt2=0.2[p.u]. fig. 7 step change of equivalent line impedance the goal is to generate higher and lower values of resistance and reactance compared to uncompensated line parameters, to investigate if upfc is capable to independently compensate both line parameters. step responses of x and r represented in fig. 7 show that measured equivalent resistance and reactance follow the reference signals without steady sate error. the step responses are almost aperiodic. when the reference of one of the parameters (x or r) is changed while the other parameter is kept constant, undershoot or overshoot occur in response of the parameter which is kept constant. this can be observed in transition from time period t3 to t4, when r=0.05[p.u] and it is kept constant and greater than nominal (uncompensated) and x=0.15[p.u] which is lower than nominal. in this case the disturbance in measured resistance occurs and it is represented as an overshoot. however, this disturbance is evidently negligible, and it happens due to the socalled coupling between active and reactive powers. similar disturbances can be seen on the transition from time period t2 to t3 when the overshoot occurs in time response of measured reactance whereas in the transition from time period t6 to t7. the summarized results of the simulation for fig. 7 are given in table 1. in the table 1 the brief description of time periods t1 to t9 is given using symbols describing direction of change of x and r relative to previous time period. symbol “-“ which means no change in x or r, “↘” lower x or r and “↗” higher x or r. 430 a. a. marković, s. vukosavić table 1 summarized results of step responses of equivalent line x and r t1 t2 t3 t4 t5 t6 t7 t8 t9 x r x r x r x r x r x r x r x r x r d ir . − • • • • • • • • ↘ • • • • • ↗ • • • • • s t e p ap.1 • • • • • • • • • • • • over.2 • • • under.3 • • 1aperiodic 2overshoot 3undershoot the brief overview of the step response of equivalent x and r are described by the type of step response which can be aperiodic, with overshoot or with undershoot. the results in table 1 show also that the time response is mostly aperiodic. time responses of the variable resistance (blue) and reactance (red) are shown in fig. 8. when no compensation is done (time periods t1 and t8), variable r and x are zero, which is in accordance with the theoretical discussion. the step responses are the same as the step responses of equivalent x and r (fig. 7) since they represent the sum of these signals with constant, uncompensated values of x and r. in is interesting to notice that variable x and r, generated by the upfc can be both positive and negative. especially interesting is the possibility of generating negative resistance. fig. 8 step change of variable reactance and resistance the change of line resistance and reactance influences the change of active (red trace) and reactive (blue trace) powers in line 2, shown in fig. 9. dashed trances in fig. 9 represent active and reactive powers when no compensation is done. step responses of active and reactive powers are almost aperiodic. the overshoot in active power step response happens in transition from the time period t3 to t4 (1.2%) and in transition from the time period t5 to t6 (2.9%). however, these overshoots are under 5% which is control of series impadance of power lines using power flow controller 431 considered acceptable. it is important to notice that no oscillations in active power response are present. comparing the results in fig. 7 with the results obtained in fig. 9, it can be concluded that the step change in line reactance has greatest impact to power changes, which is in accordance with the theoretical discussion. fig. 9 active and reactive power change to deeply investigate the step response of equivalent line resistance (black trace), fig. 10 can be observed. the trances shown in fig. 10 are the same as the trances form fig. 7, only enlarged. fig. 10 the step response of equivalent line resistance step responses of equivalent resistance are mostly aperiodic as it is previously stated. step response is quite fast end it reaches the steady state for 4[s]. the enlarged parts in fig. 432 a. a. marković, s. vukosavić 10 show the exact time responses of equivalent resistance in transition from time period t6 to t7 when the overshoot of 4% occurs, and in transition from time period t8 to t9 when the overshoot of 3% occurs. these are acceptable values. however, greater disturbances evidently occur in transition from t3 to t4, t4 to t5 and t6 to t7. these disturbances can be lowered by designing an appropriate decoupling controller. further, the time responses of upfc and bus 2 voltages are observed (fig. 11). the main purpose of the upfc is to insert series voltage into the line to in order to generate the reference equivalent resistance and reactance. step responses of the d (red trace) and q (blue trance) components of the upfc series voltages are shown in fig. 11a. when no compensation is done (time periods t1 and t8), series voltage is equal to zero, which means that series part of upfc is inactive. in other time periods series voltage changes in appropriate manner to fit the regulation goals. time responses are obviously aperiodic with fig. 11 a. upfc series voltage, b. upfc shunt voltage, c. bus 2 voltage amplitude, d. dc link voltage control of series impadance of power lines using power flow controller 433 very fast response, with time constant below 1[s]. the amplitude of series injected voltage is within the rage of 0.1[p.u], which is the typical maximal value of inserted series voltage in practical implementation [18]. the main task of upfc shunt part is to keep bus 2 and dc link voltages at nominal level. fig. 11c and fig. 11d show that this task is successfully accomplished since observed voltages are kept constant during all time periods and no disturbances are noted. the reason for this is upfc shunt voltage which d (red trace) and q (blue trance) components are shown in fig. 11b, which is also kept constant during all time periods thanks to the shunt part control system. 6. conclusion the paper discusses the possibility of aiding to the integrity of ac grids by introducing unified power flow controller (upfc), enabled by the proposed controller, capable of modulating both series resistance r and series reactance x of an overhead power line. proposed controller is simple to set and straightforward to use. the proposed operation mode of ufpc is tested on single – machine infinite bus system consisting of four buses with detailly modeled generator. the results show that upfc is very efficient in compensating line equivalent resistance and reactance. the step responses are aperiodic with zero steady state error and small settling time. decoupling controllers are not required as the disturbances that take place during step changes of reference signals are quite insignificant. this way, active and reactive powers on the line are controlled indirectly, by changing the line impedance. no oscillations in active power step response are noted. the described possibility of upfc has the potential of being used for attenuation of power angle deviations and power oscillations in large scale power systems experiencing significant power disturbances. however, this possibility is yet to be proven. 7. appendix a parameters of four used pi regulators, numbered as in fig. 4 are: kp1=0.1, ki1=1, kc1=10; kp2=0.1, ki2=1.4, kc2=14; kp3=2, ki3=10, kc3=5; kp4=5, ki4=10, kc4=2. 8. appendix b parameters of the test power system are as follows: ▪ generator g2: xd=1.2[p.u], x'd=0.3[p.u], xq=1[p.u], t'd0=5[s], h=6[s], k=0.02; ▪ generator's g2 voltage regulator: ka=20, ta=0.2[s]; ▪ generator's g2 turbine: tch=0.4[s]; ▪ turbine's regulator: tsv=0.2[s]; ▪ system frequency regulator: tf=1[s]; ▪ power lines: zv1=0.01+j0.1[p.u], zv2=0.03+j0.2[p.u], zv3=0.03+j0.4[p.u], zv4=0.01+j0.2[p.u]; ▪ loads: zl1=2+j1[p.u], zl2=0.8+j0.6[p.u], zl3=0.8+j0.6[p.u]; ▪ upfc parameters: zsh=0.001+j0.08[p.u], c=0.5[p.u]. 434 a. a. marković, s. vukosavić references [1] l. gyugyi, "unified power flow control concept for flexible ac transmission systems", ieeе proceedings, vol. 139, no. 4, pp. 323–331, july 1992. [2] s. d. round, q. yu, l. e. norum and t. m. undeland, "performance of a unified power flow controller using a d-q control system", in proceedings of the sixth international conference on ac and dc power transmission, london, 1996, pp. 357–362 [3] k. r. padiyar and a. m. kulkarni, "control design and simulation of unified power flow controller", ieee trans. power deliv., vol. 13, no. 4, pp. 1348–1354, oct. 1998. [4] i. papic, p. zunko, d. povh and m. weinhold, "basic control of unified power flow controller", ieee trans. power syst., vol. 12, no. 4, pp. 581–588, nov. 1997. [5] h. fujita, y. watanabe and h. akagi, "control and analysis of a unified power flow controller", ieee trans. power electron., vol. 14, no. 6, pp. 1021–1027, nov. 1999. [6] l. liu, y. zhang, p. zhu, y. kang and j. chen, "control scheme and implement of a unified power flow controller", in proceedings of the international conference on electrical machines and systems, nanjing, 2005, pp. 1170–1175. [7] l. liu, p. zhu, y. kang and j. chen, "power-flow control performance analysis of a unified power-flow controller in a novel control scheme", ieee trans. power deliv., vol. 22, no. 3, pp. 1613–1619, july 2007. [8] p. k. dash, s. mishra and g. panda, "damping multimodal power system oscillation using a hybrid fuzzy controller for series connected facts devices", ieee trans. power syst., vol. 15, no. 4, pp. 1360–1366, nov. 2000. [9] f. m. albatsh, s. mekhilef, s. ahmad, h. mokhlis, "fuzzy logic based upfc and laboratory prototype validation for dynamic power flow control in transmission lines", ieee trans. ind. electron., vol. 64, no. 12, pp. 9538–9548, dec. 2017. [10] m. khaksar, a. rezvani and m. h. moradi, "simulation of novel hybrid method to improve dynamic responses with pss and upfc by fuzzy logic controller", neural comput. appl., vol. 29, pp. 837–853, feb. 2018 [11] n. narayana and r. k. mallick, "enhancement of small signal stability of power system using upfc based damping controller with novel optimized fuzzy pid controller", j. intell. fuzzy syst., vol. 35, no. 1, pp. 501–512, july 2018. [12] h. c. tsai, j. h. liu and c. c. chu, "integrations of neural networks and transient energy functions for designing supplementary damping control of upfc", ieee trans. ind. appl., vol. 55, no. 6, pp. 6438–6450, dec. 2019. [13] h. c. tsai and c. c. chu, "upfc supplementary damping control synthesis: a forward neural networks approximated energy function approach", in proceedings of the ieee industry applications society annual meeting (ias), 2018, pp. 1–8. [14] m. januszewski, j. machowski and j. w. bialek, "application of the direct lyapunov method to improve damping of power swings by control of upfc", iet proceedings – gener. transm. distrib., vol. 151, no. 2, pp. 252–260, april 2004. [15] m. a. sayed and t. takeshita, "line loss minimization in isolated substations and multiple loop distribution systems using the upfc", ieee trans. power electron., vol. 29, no. 11, pp. 5813–5822, nov. 2014. [16] k. k. sen and m. l. sen, introduction to facts controllers: theory, modeling and applications, john willey & sons, new jersey, 2009, chapter 2, pp. 58–62. [17] m. h. haque, "application of upfc to enhance transient stability limit", in proceedings of the ieee power engineering society general meeting, 2007, pp. 1–6. [18] x. yang, w. wang, h. cai, p. song and z. xu, "installation, system-level control strategy and commissioning of the nanjing upfc project", in proceedings of the ieee power and energy society general meeting, 2017, pp. 1–5. [19] y. cui, y. yu, w. bao, y. feng, q. guo, w. xie and m. jin, "analysis of application effect of 220 kv upfc demonstration project in shanghai grid", dianli xitong baohu yu kongzhi/power system protection and control, vol. 46, pp. 136–142, 2018. [20] s. k. samal, p. c. panda, "damping of power system oscillations by using unified power flow controller with pod and pid controllers", in proceedings of the international conference on circuits, power and computing technologies (iccpct-2014), 2014, pp. 662–667. [21] a. m. shotorbani, a. ajami, m. p. aghababa and s. h. hosseini, "direct lyapunov theory-based method for power oscillation damping by robust finite -time control of unified power flow controller", iet gener. transm. distrib., vol. 6, no. 9, pp. 822–830, nov. 2012. control of series impadance of power lines using power flow controller 435 [22] h. huang, l. zhang, o. oghorada and m. mao, "analysis and control of a modular multilevel cascaded converter-based unified power flow controller", ieee trans. ind. appl., vol. 57, no. 3, pp. 3202–3213, june 2021. [23] m. khaksar, a. rezvani and m. h. moradi, "simulation of novel hybrid method to improve dynamic responses with pss and upfc by fuzzy logic controller", neural comput. and appl., vol. 29, pp. 837–853, feb. 2018. [24] p. w. sauer, m. a. pai and j. h. chow, power system dynamics, and stability: with synchrophasor measurement and power system toolbox, 2nd edition, wiley-ieee press, 2017, chapter 4, pp. 53–70. 12326 facta universitatis series: electronics and energetics vol. 37, no 3, september 2024, pp. 423 – 435 https://doi.org/10.2298/fuee2403423k © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper analysis of four circular coil configuration for uniformly distributed magnetic field generation karolina kasaš-lažetić, miodrag milutinov, teodora spasić, gorana mijatović university of novi sad, faculty of technical sciences orcid ids: karolina kasaš-lažetić https://orcid.org/0000-0003-1502-450x miodrag milutinov https://orcid.org/0000-0002-1725-3405 teodora spasić https://orcid.org/0000-0002-5490-1045 gorana mijatović https://orcid.org/0000-0002-7409-8130 abstract. a uniform magnetic field can be achieved with various simple structures of circular or square cross-sections. the main purpose of each of these is to create a larger volume of uniformly distributed magnetic field. the improvement of the desired zone homogeneity can be achieved by varying the design parameters of the coil and applying different optimization algorithms. in this paper, the lee-whiting circular coil system has been investigated considering the cross-section of the real conductor instead of the volumeless ideal conductor. the parameters of the coil were optimized to achieve a uniformly distributed magnetic field inside a spherical area and the desired total deviation rate along the centreline. the numerical calculations and the optimization procedure were performed on a simplified 2d axial symmetric model. the obtained results show that in the case of real conductors, the coil positions differ from the lee-whiting arrangement. key words: lee-whiting coil system, optimisation, uniform magnetic field 1. introduction in many scientific investigations, it is very often necessary to place objects in a uniformly distributed magnetic field [1]. the application field is very wide including the area of biological medicine [2]-[4], magnetic resonance imaging [5],[6], cell damage recovery [7],[8] and many other fields, such as magnetometer calibration [9],[10] magnetic navigation [11], probe and sensor calibration [12], low-frequency magnetic field immunity testing [13], aerospace [14] wireless charging [15] and power transmission [16],[17]. received november 29, 2023; revised may 23, 2024; accepted june 10, 2024 corresponding author: karolina kasaš-lažetić university of novi sad, faculty of technical sciences e-mail: kkasas@uns.ac.rs *an earlier version of this paper was presented at the 16th international conference on applied electromagnetics (пес 2023), august 28-30, 2023, in niš, serbia [1] https://orcid.org/0000-0003-1502-450x https://orcid.org/0000-0002-1725-3405 https://orcid.org/0000-0002-5490-1045 https://orcid.org/0000-0002-7409-8130 424 k. kasaš-lažetić, m. milutinov, t. spasić, g. mijatović the homogeneity of the internal field can be achieved by using different coil systems of conducting wires together with the current source, which should have the role of a high-precision electromagnetic exposure system [4]. the exposure systems are usually based on coaxial coil systems to generate a linearly polarized magnetic field of high uniformity in specific volume. very often, the coils are placed in an enclosure made of high conductivity or/and high permeability material for shielding the background magnetic field. this enclosure significantly affects the uniformity of the primarily generated magnetic field, decreasing the ability of the coil to generate a large volume of uniformly distributed magnetic field [18],[19]. to achieve a desired zone of homogeneity, attention should be paid to many elements of the system construction itself. the most frequently applied common schemes for generating these fields are helmholtz and merritt coils, but saddle coils, solenoid, spherical and elliptical coils are widely used, too [20]. many investigations have been made to improve coil systems and produce larger volumes of space with uniform magnetic fields [21]. in the classic helmholtz coil system (either square or circular), two identical magnetic coils are placed symmetrically along a common axis related to the basic plane of the experimental area. the distance between the coils is determined based on the condition that the first and second spatial derivatives of the applied field are equal to zero at the centre of the coil system. this condition is fulfilled when the distance between the circular coils d and their radii, r, or the halflength of the square coil side a/2 are equal (d=r or d=a/2). regardless of the coils’ shape, the currents in both coils are the same, with the same direction of current flow [6]. to maximize the volume of homogeneity of the magnetic field, several higher derivatives can be zeroed. these conditions can be achieved using additional coils thus forming systems of three, four or five coils. the merritt coil system with four square coils gives a larger volume of uniform magnetic field than two helmholtz coils [3]. sometimes the number of coils is even higher and goes up to eight. based on research experiments and theoretical analyses, systems with improved coaxial constructions were derived that create a larger volume of uniformly distributed magnetic field. applying the conventional method to generate high field homogeneity in the central point of the system does not result in achieving the required homogeneity in the desired area. accordingly, some additional information is needed, in the form of parameters such as the length of the coil centreline part or the volume of the zone with a certain value of the magnetic field. in general, the square coil systems are easier to construct, install and apply in cases when larger volumes of uniform magnetic field spaces are needed, whereas in the systems with a smaller required volume, circular coil systems are suggested [22]. four-coil structures appear in different configurations which are suitable for optimizing their performance [23]. one of the well-known four circular coil systems is the lee-whiting one, providing up to 8-order field uniformity [4]. in theoretical formulas, the coils are modelled as line sources without a cross-section. in practical applications, especially when high-intensity magnetic fields are required, the cross-section of the coils cannot be neglected. it is necessary to examine the influence of the conductor’s cross-section on the homogeneity of the zone of interest. in this paper, we have compared the zone of uniformity obtained for the ideal and the real lee-whiting four-coil systems. our results show that by optimizing the configuration parameters, a constant magnetic field can be achieved in arbitrary parts of the space, fulfilling the desired total deviation rate. analysis of four circular coil configuration for uniformly distributed magnetic field generation 425 2. model the lee-whiting four-coil system consists of two circular pairs of coils with currents i1 and i2 of equal radii a1 = a2 = a that are placed symmetrically ±z1 and ±z2 along a common axis with respect to the origin 0, as shown in fig. 1. the geometry of the structure suggested the application of cylindrical coordinate system, as it is shown in fig. 1. the lee-whiting coil system carries direct current in the same direction, with the current ratio of i1/i2 = 2.2604, generating a static magnetic field. outer coils are separated by 1.8816 times their radii (2z1 ≈ 1.8816a), while the inner coils are separated by 0.4864 times their radii (2z2 ≈ 0.4864a) [4]. fig. 1 configuration of the lee-whiting 4-coil system the most important parameters of the analysed lee-whiting 4-coil system, such as the coils radii and their positions, as well as the coils currents are shown in table 1. table 1 key parameters of the lee-whiting coil system parameter value radii of the coils (a) 0.23 m position of outer coils (±z1) ±0.2164 m position of inner coils (±z2) ±0.0559 m current of two outer coils (i1) 1.4 a current of two inner coils (i2) 0.62 a 3. calculation of magnetic flux density 3.1. analytical calculation the magnetic flux density vector, b, for a simple planar, filamentary circular current loop in an arbitrary point outside the conductor can be obtained analytically by applying the biot-savart law [24]. the problem of calculating off-axis values of the magnetic flux density vector components produced by a circular coil is somewhat more complex, due to derived formulas which are not 426 k. kasaš-lažetić, m. milutinov, t. spasić, g. mijatović expressible in terms of analytic functions. it is necessary to apply complete elliptic integrals of the first and second kinds [25]. due to the axisymmetric characteristics of circular coil structure, there can be variations of the magnetic field distribution in the radial (r) and vertical (z) direction only. for the individual current loop of the radius a, located in the z = 0 plane of the cylindrical coordinate system, centred at the origin and carrying current i in the positive direction, the field components, are 2 2 2 2 2 2 2 [( ) ( ) ( )] 2 r c z b a r z e k k k r    = + + − , (1) 2 2 2 2 2 2 2 [( ) ( ) ( )] 2 z c b a r z e k k k   = − − + , (2) where k and e are the complete elliptic integrals of the first and second kinds, respectively, which have been illustrated in most textbooks and the literature [26]. in the above expressions, the following substitutions are applied for simplicity: α2 = a2 + r2 + z2 2ar, β2 = a2 + r2 + z2 + 2ar, k2 = 1 α2/β2 and c = μ0i/π. the resulting field of more than one, coaxially placed coil is equal to the vector sum of the fields generated by each coil  = = n i izrzr 1 ),,,(),,(  bb . (3) in this paper, eq. (1)-(3) were implemented in the matlab software package for analytical calculation of the magnetic flux density distribution of the lee-whiting 4-coil system. 3.2. numerical calculation the finite element method (fem) as a variational calculus-based numerical procedure for solving partial differential equations is suitable for handling complex geometries related to practical problems such as the one discussed in this paper. the fem simulation in the present study was performed by applying the comsol multiphysics program package. within it, the ac/dc module’s 2d-axisymmetric submodule and the magnetic field interface stationary simulation option was applied. to optimise the coil parameters to achieve a uniform b field in the desired part of space, the optimisation module was added to the simulation process. the fem calculation is based on the governing differential equation for the magnetic vector potential, a, o = −a j , (4) where j denotes the imposed current density and µ0 is the vacuum permeability [27]. the expressions for all three spatial components from the circular loop can be derived by first calculating the magnetic vector potential, a. then, the components of the vector b can be determined as ab = . (5) to get a full description of the analysed problem, the magnetic insulation and the perfect magnetic conductor boundary condition must be additionally specified. analysis of four circular coil configuration for uniformly distributed magnetic field generation 427 3.3 model of the ideal and real coils in this study, the ideal lee-whiting coil system is modelled with four volumeless circular current loops, while the real coils system is modelled with four circular current loops of rectangular cross-section. in the case of the ideal coil system, in the analytical calculation, the total magnetic flux density is obtained by (3), as the sum of four individual filamentary circular current loops (n = 4). in the case of the real coil system, each of the four circular coils is portioned in n current loops passing through the nodes of a uniform rectangular grid, resulting in the total magnetic flux density as the sum of 4n individual filamentary circular current loops. the value of the parameter n presents a compromise between the complexity and accuracy of the model. in the analysed model, each filamentary circular current loop carries the same part of the coil current, i1/n for the outer and i2/n for the inner pair of the lee-whiting coils. in finite element analysis (fem), periodic conditions can greatly reduce the analysed model size. due to axial symmetry of the lee-whiting coil system, as well as the knowledge about the invariant magnetic field distribution around the axis of symmetry, its 3d geometry model can be reduced and the whole calculation can be carried out solving a 2d problem in rz plane. this characteristic of the system allowed the circular current loop to be modelled with its cross-sectional geometry in the positive rz plane, only. additionally, the analysed model is geometrically identical on either side of the plane z = 0, which represents the mirror symmetry plane for the coil currents, too. applying the plane (mirror) symmetry, the number of coils could be halved. the aforementioned advantages of the system can be effectively exploited by incorporating them into the computational process and applying appropriate boundary conditions [28]. reducing the original geometry significantly decreased the computational complexity of the model. the simplified 2d, axisymmetric and plane symmetric models of the ideal and the real lee-whiting coil models for fem calculations are presented in fig. 2a and fig. 2b, respectively. the currents i1 and i2 in the ideal coils are modelled as point sources flowing out of rz plane in the analysed 2d axisymmetric and plane symmetric models. the real coils are presented as homogenized multi-turn conductors with n turns of copper wires inside a rectangle of dimensions w  h. the homogenized multi-turn option implements a homogenized model of a coil consisting of numerous tightly wound conducting wires, separated by an electrical insulator, without the need to model each wire individually. the homogenized multi-turn feature in the comsol program package uses an a) b) fig. 2 the simplified a) ideal and b) real coil 2d model for fem calculations 428 k. kasaš-lažetić, m. milutinov, t. spasić, g. mijatović appropriate equivalent geometry to model the coils. the position of the point source modelling the ideal coil coincides with the intersection of the rectangle's diagonals modelling the real coil, as it is shown in figure 2b. 3.4. the uniformity at an arbitrary point within the system of the loops, the magnetic field uniformity, u(r, z), is defined as a deviation of the magnetic flux density at an arbitrary point, bz, from the magnetic flux density at the centre of the system, b0, 0 0 ( , ) ( , ) − = zb r z b u r z b . (6) in the applied coordinate system b0 = bz(0,0). the uniformity is expressed in percentage per million (ppm) to find the area of high uniformity as in [28], where the deviation is less than 100 ppm. 4. optimisation algorithm in electromagnetic coil design, a desired b-field distribution can be achieved by changing one or more coil parameters. in the general case, the magnetic flux density distribution along a part of the centreline (on the axis of system symmetry) is not constant. the magnetic field within a desired area can be adjusted by applying certain optimization techniques, i.e., by changing the driving currents of the coil, the vertical position of the turns, their radii, or the combination of these parameters. the optimization problem can be formally stated by applying the appropriate objective function. to achieve the desired magnetic field distribution, in this paper the objective function is expressed as opt 0 opt 0 0 (0, )1 d z zb z b z z b −  , (7) which minimizes the relative deviation between the z-component of the magnetic flux density vector, bz, and the value of b0 = bz(0,0), averaged over the coil’s centreline between the points placed at z = 0 and z = zopt. the defined optimisation zone z{0, zopt}, ensures the highest uniformity on the symmetry axes, with a slight degradation in the radial direction. the objective is normalized with respect to zopt, and b0 [29]-[31]. the optimisation procedure is performed in the comsol multiphysics software package, where several different optimisation algorithms are implemented. since the underlying problem is stationary, the objective function (7) is analytically differentiable with respect to the control variables. accordingly, the snopt (sparse nonlinear optimizer) procedure is chosen from the offered gradient based optimization methods. this optimisation procedure is a non-stochastic optimisation algorithm, which takes advantage of the analytically computed gradients of both the objective function and all the constraints. in the optimization process, the optimality tolerance is set to 10-6. compared to other optimization procedures included in comsol, the snopt requires relatively few evaluations of the problem functions [32]. analysis of four circular coil configuration for uniformly distributed magnetic field generation 429 the optimization procedure is performed for the real coils with rectangular cross section for several different dimensions, preserving the same current ratio and radii as those listed in table 1. the radii given in table 1 correspond to the position of the point source, modelling the ideal coil which is located at the middle point of the real rectangular coil model, as is shown in fig. 2b and mentioned in section 3.3. the target goal is to find the vertical positions of each coil (the distance between inner/outer coils) that ensure the same or nearly the same uniformity as the one theoretically obtained in [33]. 5. results the distribution of the magnetic flux density vector for the ideal lee-whiting 4-coil system and the determined uniformity zones of 100 ppm and 1000 ppm are presented in fig. 3. the calculations are performed both analytically applying the matlab platform, and numerically in the comsol program package as is described in section 3. a) b) fig. 3 a) magnetic flux density distribution and b) the uniformity of the ideal leewhiting 4-coil system both calculation types give the same results of the magnetic flux density vector distribution and the area of 100 ppm uniformity as in [34], proving that both models are well designed for the further analysis of the real coils. the magnetic flux density vector distribution uniformity, u(r, z), for the ideal and the real lee-whiting four-coil system, calculated in the comsol program package and the matlab package are presented in fig. 4 and fig. 5, respectively. in the first analysed case, in the real system, all coils have the same cross-section of 10  20 mm2, with h = 20 mm, while in the second case, the cross-section is set to be 20  40 mm2, with h = 40 mm. the shapes of uniformity presented in fig. 4 and fig. 5 indicate high agreement of the results obtained applying these two methods, yet the analytical calculations are much faster and with less memory consumption than the numerical, fem based calculations. 430 k. kasaš-lažetić, m. milutinov, t. spasić, g. mijatović a) b) fig. 4 fem based uniformity calculations for the ideal lee-whiting 4-coil system and real coils at the same positions with cross-section: a) 10  20 mm2, b) 20  40 mm2 a) b) fig. 5 analytically based uniformity calculations for the ideal lee-whiting 4-coil system and the real coils at the same positions with cross-section: a) 10  20 mm2, b) 20  40 mm2 to examine the influence of the cross-section area of a real conductor on the magnetic flux density distribution, compared to the ideal case, the entire calculation was repeated for a rectangular cross-section of doubled dimensions, 20  40 mm2. the uniformity zone of 100 ppm is slightly lower in the case of a real coil of doubled cross-section area than for the idealized coil system, as is shown in fig. 4b. the obtained results indicated the need to find the new positions for the real coils with a cross section of 20  40 mm2 to increase the zone of defined uniformity. the calculations also show that using the initial positions of the lee-whiting coils given in table 1, the zone of uniformity decreases as the coil cross-section increases. analysis of four circular coil configuration for uniformly distributed magnetic field generation 431 starting from the initial positions of the ideal coils, listed in table 1, the new positions of the real rectangular coil model were determined applying the optimization algorithm described in section 4. the values z1 and z2 in table 2 represent the optimized positions of the real coil’s centre-points. the variable ro represents the radius of the spherical area within the desired uniformity value has been reached. table 2 the optimized z-positions of the real coil’s centre-points cross-section w (mm)  h (mm) z1 (mm) z2 (mm) ro(mm) 100 ppm ro (mm) 200 ppm 11 219.49 56.263 93.5 >100 22 219.51 56.277 94.9 >100 24 219.87 56.287 94.5 >100 48 219.96 56.301 95.6 >100 816 217.96 56.125 84.4 92.6 1020 217.56 56.025 78.0 88.2 the trial-and-error method starts by setting the lowest convergence error to the obtained optimized positions in the acceptable time frame. the number of iterations, for the first three cross sections listed in table 2 are 15, 27 and 25, respectively, with the convergence error of 1e-5. the calculation time was 154 s, 181 s and 220 s, respectively. it can be concluded that increasing the size of the cross-section, also increases the number and the time of iterations. if a calculation fails, the convergence error is increased. the number of iterations, for the next two cross sections listed in table 2 are 9 and 10, respectively, with the convergence error of 2e-5. the calculation time was 150 s and 167 s, respectively. the biggest cross-section that the applied algorithm could solve was 10  20 mm2, with the convergence error of 5e-5, 10 iterations in 320 seconds. all calculations are performed on 64-bit operating system with intel® core™ i5-4670 cpu at 3.6 ghz with 32 gb of installed ram. in our study, adaptive meshing was applied, refining the mesh selectively near the z axis and around the conductors, to improve the overall quality of the mesh. depending on the cross section the resulting mesh has between 4500 and 5000 domain elements. fig. 6 shows the uniformity u(0, z), for the coils with parameters listed in table 2. for all analysed coils, a zone could be found bounded with ro where the uniformity is below 100 ppm. the uniformity of 200 ppm is obtained slightly above 100 mm for all coil sizes except the last two where it is achieved slightly below 100 mm. in fig. 7 the uniformity of the same coils, listed in table 2 is shown but without the optimization algorithm. instead, the original lee-whiting positions of the coils are applied. it could be noticed that the uniformity is nearly the same for all six coil systems, and it resembles the optimized 10  20 mm2 coil cross-section. the overall conclusion is that in the case of a real coil some new positions of the coils could be found to achieve higher uniformity. 432 k. kasaš-lažetić, m. milutinov, t. spasić, g. mijatović fig. 6 uniformity of coil cross-sections listed in table 2 on the axis of symmetry optimized to achieve target uniformity up to zopt = 10cm fig. 7 uniformity of coils with cross-sections listed in table 2 on the axis of symmetry using the lee-whiting coil positions to evaluate the effective uniform area space size, the maximum normalised space radius, rmax is usually applied as a parameter. it is calculated as the ratio of the maximum radius with defined uniformity, r, and the inner coil radius a, for the given coil. for example, the uniformity of 100 ppm of the ideal lee-whiting coil is inside a spherical zone with the maximum radius r = 0.066 m, so rmax = r/a = 0.287. increasing the target uniformity results in the increase of the radius of the spherical zone [23]. fig. 8a shows the zones with uniformity of 100 ppm and 1000 ppm obtained for the ideal lee-whiting 4-coil system and the real coil system with cross section 10  20 mm2 for which a new vertical position is obtained according to the optimisation algorithm. analysis of four circular coil configuration for uniformly distributed magnetic field generation 433 a) b) fig. 8 a) uniformity and b) maximum normalised space radius for the lee-whiting 4-coil system with cross-section 10  20 mm2 using z1 and z2 listed in table 1 and table 2 comparing the uniformity for the ideal and real coil’s system it could be seen that applying the optimisation algorithm the uniformity of the real coil system is improved. in fig. 8b the maximum normalised space radius for these two coils systems is compared. comparing the radius rmax = 0.287 for the original lee-whiting coil, for u = 100 ppm, and the radius rmax = 0.337 for the real coil after optimization, an improvement of about 16% is achieved. increasing the observed value of uniformity, the improvement decreases. in particular, for u = 1000 ppm an improvement about 4% is reached. 6. conclusion uniformly distributed magnetic fields are widely used in many different applications. circular coils provide homogeneity in a smaller area than the square ones but are easier to produce. in this paper, we tried to answer the question to what extent the real cross-section of the coil affects the magnetic field distribution, compared to the field distribution generated by the current flowing in the ideal conductor. it is shown that both the developed analytical procedure in matlab and the generated numerical model in comsol give very similar results for the magnetic flux density vector distribution and its uniformity. calculating the magnetic flux density vector distribution uniformity for the real and the ideal lee-whiting four-coil system considering two different cross-sections of the real conductor, it can be concluded that the bigger cross section slightly degraded the uniformity zone. the results of the study demonstrated that in the coil parameters optimisation process, to reach the desired zone of uniformity, the influence of the real coil cross-section cannot be neglected. in the case of a real coil, some new positions of the coils were found to achieve higher uniformity. according to the optimisation results, the uniformity of the real coil’s system is improved. 434 k. kasaš-lažetić, m. milutinov, t. spasić, g. mijatović acknowledgment: this paper is supported by the provincial secretariat for higher education and scientific research of the autonomous province of vojvodina, through the project, no: 142-4513190/2023-01/01. references [1] k. kasaš-lažetić, m. milutinov, t. spasić and g. mijatović, "improving the coil design parameters to achieve a high uniformity magnetic field", in proceedings of the 16th international conference on applied electromagnetics (пес 2023) conference, 2023, pp. 85–88. [2] j. l. ristić-djurović, s. gajić, a. ilić, n. romčević et al., "design and optimization of electromagnets for biomedical experiments with static magnetic and elf electromagnetic fields", ieee trans. ind. electron., vol. 65, no. 6, pp. 4991–5000, nov. 2017. [3] d. herceg, a. juhas and m. milutinov, "a design of a four-square coil system for biomagnetic experiment", facta universitas, series: electronics and energetics, vol. 22, no. 3, pp. 285–292, dec. 2009. [4] j. l. kirschvink, "uniform magnetic fields and double-wrapped coil systems: improved techniques for the design of bioelectromagnetic experiments", bioelectromagnetic, vol. 13, no. 5, pp. 401–411, may 1992. [5] s. ghaly, k. alsnaie and a. ali, "design and modeling of a radiofrequency coil derived from a helmholtz structure", eng. technol. appl. sci. res., vol. 9, no. 2, pp. 4037–4040, april 2019. [6] s. ghaly and m. khan, "design, simulation, modeling and implementation of a square helmholtz coil in contrast with a circular coil for mri application", eng. technol. appl. sci. res., vol. 9, no. 6, pp. 4990–4995, dec. 2019. [7] c. cezar, e. roche, h. vandenburgh, at al., "biologic-free mechanically induced muscle regeneration", proc. natl. acad. sci. u.s.a, vol. 113, no. 6, pp. 1534–1539, feb. 2016. [8] y. zhao, t. fan, j. chen et al., "magnetic bioinspired micro/nanostructured composite scaffold for bone regeneration", colloids surf. b: biointerfaces, vol. 174, pp. 70–79, feb. 2019. [9] d. yang, z. you, b. li et al., "complete tri-axis magnetometer calibration with a gyro auxiliary", sensors, vol. 17, no. 6, pp. 1–21, may 2017. [10] c. qian, l. ying, t. junjian, zh. tian, h. xing and zh. yueyang, "in situ calibration of coils constant in a spin-exchange relaxation-free (serf) co-magnetometer", measurement, vol. 214, pp. 1–9, june 2023. [11] s. kim and k. ishiyama, "magnetic robot and manipulation for active-locomotion with targeted drug release", ieee/asme trans. mechatron., vol. 19, no. 5, pp. 1651–1659, oct. 2014. [12] a. zikmund and p. ripka, "calibration of the 3d coil system’s orthogonality”, ieee trans. magn., vol. 49, no. 1, pp. 66–68, jan. 2013. [13] y. yang, y. song, l. jiang et al., "an improved two-coil configuration for low-frequency magnetic field immunity test and its field inhomogeneity analysis", ieee trans. ind. electron., vol. 65, no. 10, pp. 8204–8214, oct. 2018. [14] d. batista, f. granziera, m. tosin and l. de melo, "three-axial helmholtz coil design and validation for aerospace applications", ieee trans. aerosp. electron. syst., vol. 54, no. 1, pp. 392–403, oct. 2017. [15] k. kamalapathi, p. s. rao nayak and v.k tyagi, "development and analysis of three-coil wireless charging system for electric vehicles", int. j. circ. theor. appl., vol. 50, no. 1, pp. 249–271, oct. 2021. [16] d. vinko, d. bilandžija and v. mandarić radivojević, "optimization of a two-layer 3d coil structure with uniform magnetic field", hindawi, wireless power transfer, 2021, pp. 1–11, oct. 2021. [17] d. bilandžija, d. vinko and i. bionić, "achieving uniform magnetic field with rectangular coil in wireless power transmission system", in proceedings of the 61st international symposium elmar, 2019, pp. 1–4. [18] a. juhas, n. pekarić-nađ and h. toepfer, "magnetic field of rectangular current loop with sides parallel and perpendicular to the surface of high-permeability material", serbian journal of electrical engineering, vol. 11, no. 4, pp. 701–717, dec. 2014. [19] q. cao, d. pan, j. li, y. jin, z. sun, s. lin, g. yang and l. li, "optimization of a coil system for generating uniform magnetic field inside a cubic magnetic shield", energies, vol. 11, pp. 1–14, march 2018. [20] z. xuehua, l. chuangchuang, s. hao, m. yutong and ch. hongde, "design of improved four-coil structure with high uniformity and effective coverage rate", helion, vol. 9, no. 4, pp. 1–18, april 2023. [21] y. lu, y. yang, m. zhang, r. wang, ljiang and b. quin, "improved square-coil configurations for homogeneous magnetic field generation", ieee trans. ind. electron., vol. 69, no. 6, pp. 6350–6360, june 2022. analysis of four circular coil configuration for uniformly distributed magnetic field generation 435 [22] r. merritt, c. purcell and g. stroink, "uniform magnetic field produced by three, four and five square coils", rev. sci. instrum., vol. 54, no. 7, pp. 879–882, july 1983. [23] h. liangliang. x. jinzhang. zheng q., z. xun and h. zongyuan, "a novel understanding of circular four-coil configuration for uniform magnetic field generation", ijeee, pp. 1–13, march 2021. [24] j. simpson, j. lane, christopher immer and robert youngquist, "simple analytic expressions for the magnetic field of a circular current loop", nasa/tm-2013-217919, pp. 5–7, 2001. [25] ch. yuessen, "numerical calculation for the magnetic field in current-carrying circular arc filament", ieee trans. magn., vol. 34, no. 2, pp. 502–504, march 1998. [26] m. w. garrett, "calculation of fields, forces and mutual inductances of current systems by elliptic integrals", j. appl. phys., vol. 34, no. 9, pp. 2567–2573, sept. 1963. [27] b. d. popovic, electromagnetics, beograd: gradjevinska knjiga, 2000. [28] z. xuehua, l. chuangchuang, s. hao, m. yutong and ch. hongde, "design of improved four-coil structure with high uniformity and effective coverage rate", helion, vol. 9, no. 4, pp. 1–18, april 2023. [29] https://www.comsol.com/blogs/exploiting-symmetry-simplify-magnetic-fieldmodeling/#modeling%20a%20coil%20with%20three%20symmetry%20planes, retrieved february 28, 2024. [30] https://www.comsol.com/support/learning-center/article/optimizing-a-coil-to-achieve-a-desired-bfield-9951 , retrieved july 30, 2023. [31] https://www.comsol.com/blogs/3-ways-to-optimize-the-current-in-electromagnetic-coils/ , retrieved july 30, 2023. [32] p. e. gill, w. murray and m. a. saunders, "snopt: an sqp algorithm for large-scale constrained optimization", siam rev., vol. 47, no. 1, pp. 99–131, feb. 2005. [33] g. e. lee-whiting, uniform magnetic field, atomic energy of canada, ltd. chalk river project research and development, report crt/673, 1957, pp. 1–31. [34] ch. p. gooneratne, a. kumasi, s. yamada, s. c. mukhopadhyay and j. kosel, "analysis of the distribution of magnetic fluid inside tumors by a giant magnetoresistance probe", plos one, vol. 8, no. 11, e81227, pp. 1–14, 2013. https://www.comsol.com/blogs/exploiting-symmetry-simplify-magnetic-field-modeling/#modeling%20a%20coil%20with%20three%20symmetry%20planes https://www.comsol.com/blogs/exploiting-symmetry-simplify-magnetic-field-modeling/#modeling%20a%20coil%20with%20three%20symmetry%20planes https://www.comsol.com/support/learning-center/article/optimizing-a-coil-to-achieve-a-desired-b-field-9951 https://www.comsol.com/support/learning-center/article/optimizing-a-coil-to-achieve-a-desired-b-field-9951 https://www.comsol.com/blogs/3-ways-to-optimize-the-current-in-electromagnetic-coils/ instruction facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. 67 80 doi: 10.2298/fuee1701067l a non-inverting buck-boost converter with an adaptive dual current mode control  srđan lale 1 , milomir šoja 1 , slobodan lubura 1 , dragan d. mančić 2 , milan đ. radmanović 2 1 university of east sarajevo, faculty of electrical engineering, east sarajevo, bosnia and herzegovina 2 university of niš, faculty of electronic engineering, niš, serbia abstract. this paper presents an implementation of adaptive dual current mode control (adcmc) on non-inverting buck-boost converter. a verification of the converter operation with the proposed adcmc has been performed in steady state and during the disturbances in the input voltage and the load resistance. the given simulation and experimental results confirm the effectiveness of the proposed control method. key words: adaptive dual current mode control, non-inverting buck-boost converter, operating modes, transient response 1. introduction a non-inverting buck-boost power electronics converter is one of the most versatile non-isolated converter topologies. it has become increasingly popular in many applications, including: electric vehicles [1], dc microgrids [2], battery-powered portable electronic devices (e.g. cellular phones and laptops) [3], [4], power factor correction (pfc) circuits [5], photovoltaic systems [6], etc. the non-inverting buck-boost converter provides the output voltage that is either lower or higher than the input voltage. this property is significant in socalled dynamic voltage scaling (dvs)-based power-efficient supplies, which provide adjustable voltage levels, according to the instantaneous operating conditions [7]. one of the most important features of this converter type is bidirectional operation, which is especially useful in applications such as dc microgrids and electric vehicles. the conventional two-switch topology of the non-inverting buck-boost converter is shown in fig. 1 (a), being a result of a cascaded combination of a buck converter followed by a boost converter. it contains two power switches t1 and t2. if a bidirectional operation of the noninverting buck-boost converter is required, a four-switch topology from fig. 1 (b) must be used,  received january 25, 2016; received in revised form april 10, 2016 corresponding author: srđan lale university of east sarajevo, faculty of electrical engineering, vuka karadžića 30, 71126 lukavica, east sarajevo bosnia and herzegovina (e-mail: srdjan.lale@etf.unssa.rs.ba) 68 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović where the diodes d1 and d2 from fig. 1 (a) are replaced with additional power switches t3 and t4. fig. 1 a 2-switch (a) and 4-switch (b) topology of the non-inverting buck-boost converter depending on the ratio between the input voltage vg and the output voltage vo, the non-inverting buck-boost converter can operate in buck mode (vovg). as it is discussed in [8], these operating modes can be achieved in different ways. a conventional way is to control simultaneously the switches t1 and t2 with the same gate signal. although this switching scheme is simple, it provides low converter efficiency. in order to increase the efficiency, the operating modes are split: converter operates either as buck converter (only switch t1 is controlled, while t2 is always turned off) when vovg. however, the control of the switches is more complicated in this case, because it is necessary to provide mode detection and smooth and stable transition between the modes. different control methods can be applied to the non-inverting buck-boost converter, depending on the application. this paper is focused on using only current mode control (cmc). in most cases, for example in [2], [3], [5], [9], regardless of the applied cmc method, it is suggested that the non-inverting buck-boost converter operates either as buck or boost converter, as described above. in [5], a non-inverting buck-boost converter as a part of pfc rectifier works in both modes during fundamental period. after detection of each operating mode, the built-in control logic decides to work as conventional peak cmc (pcmc) or valley cmc (vcmc). therefore, the control shifts between pcmc (boost mode with duty cycle below 0.5) and vcmc (buck mode with duty cycle above 0.5) when the input rectified voltage crosses the output dc voltage, without need for slope compensation. in [9] a synchronous buck-boost led driver controller is presented, which uses more complex control as a combination of pcmc and vcmc with slope compensation. however, as it is stated in [2], an implementation of conventional cmc methods to this converter, such as pcmc and vcmc, is not a simple task, because they require information about converter operating modes. an average cmc (acmc) can be applied to the non-inverting buck-boost converter, without determination of operating modes [2]. by using a dual-carrier modulator described in [2], it is possible to achieve a smooth transition between the buck and the boost mode and to precisely control the inductor current throughout the entire operating range. there are other acmc approaches, for example in [3], which unlike the above mentioned acmc [2] has a mode selector circuit, which determines the operating mode during a switching cycle. due to the inherent ability of natural transition between pcmc and vcmc and vice versa, a dual current mode control (dcmc) proposed in [10] could be suitable for implementation on the non-inverting buck-boost converter, with simultaneously controlled a non-inverting buck-boost converter with an adaptive dual current mode control 69 switches t1 and t2. the converter will operate in buck mode with pcmc (duty cycle below 0.5) and in boost mode with vcmc (duty cycle above 0.5). in this way, there is no need for detection of operating modes. also, the converter is stable for the entire range of duty cycle from 0 to 1, that is, the subharmonic oscillations do not exist. on the other hand, all excellent features of pcmc and vcmc are preserved, such as fixed switching frequency, good dynamics and what is very important simplicity. a modified version of dcmc, named adaptive dual current mode control (adcmc), is proposed in [11] and elaborated in detail in [12], which improves some features of dcmc, while the basic operating principles remain the same. in [12], only simulation results are given for the non-inverting buck-boost converter. in this paper, besides some simulation results, the experimental verification of adcmc of this converter is presented. the paper is organized in the following way. the basic operating principles of adcmc, on the example of the non-inverting buck-boost converter, are described in section 2. the simulation and experimental results are presented in section 3. section 4 gives the concluding remarks. 2. operating principles of adcmc of non-inverting buck-boost converter the basic scheme of adcmc of the conventional non-inverting buck-boost converter is presented in fig. 2 (a). the switches t1 and t2 are controlled simultaneously with the same gate signal. in order to increase the converter efficiency, there is a possibility of synchronous version of this converter, where the diodes d1 and d2 are replaced with power switches, as it is shown in fig. 1 (b). in this paper, a synchronous version is not used. however, as it is stated in the introduction, if bidirectional operation of the non-inverting buck-boost converter is required, these additional two switches are necessary. a quiescent value of the output voltage vo of the non-inverting buck-boost converter from fig. 2 (a) is equal to: , 1 g o dv v d   (1) where d and vg are the quiescent values of the duty cycle and the input voltage, respectively. according to (1), when 00.5 (boost mode), a stable operation of the non-inverting buck-boost converter is guaranteed for the entire range of d without slope compensation. instead of mode detection and artificial shifting between pcmc and vcmc, dcmc proposed in [10] is suitable for this application, because it has a natural ability of shifting between pcmc, when d<0.5, and vcmc, when d>0.5, without any mode selector circuits. similarly as pcmc and vcmc, dcmc has a drawback in existence of a peak-toaverage current error (a difference between the reference current iref and the average value of the inductor current ( ) s l t i t over switching period ts). in ideal case of cmc, the aim is 70 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović to control precisely the average value of the inductor current over each switching period, that is, to make this error equal to zero. in order to eliminate peak-to-average current error, an enhanced version of dcmc is proposed in [11], named adcmc. fig. 2 a) adcmc of the non-inverting buck-boost converter, b) operating modes a non-inverting buck-boost converter with an adaptive dual current mode control 71 the operating modes of adcmc applied to the non-inverting buck-boost converter are shown in fig. 2 (b). the main difference between adcmc and dcmc is in the fact that the width between peak iref+ib and valley iref-ib current boundaries (the current bandwidth 2ib), is not constant and predefined for adcmc, unlike dcmc, but it is adaptive and online calculated by using the instantaneous peak-to-peak ripple of the inductor current δilpp on each switching period ts. the adaptive current bandwidth 2ib for the non-inverting buckboost converter is calculated as (fig. 2 (a)): 2 , ( ) g o b ib lpp ib s g o v v i k i k lf v v     (2) where kib is the scaling gain (kib≥1), fs=1/ts is the switching frequency, and l is the inductance value. the gain kib determines whether 2ib≥δilpp. when kib=1, the adaptive current bandwidth 2ib becomes equal to the measured instantaneous peak-to-peak current ripple δilpp, giving zero peak-to-average current error. it is evident from (2) that the calculation of adaptive current bandwidth 2ib depends on the inductance value l, which can be inconvenient if the l parameter is wrong or variable in different operating conditions. the wrong l parameter will lead to inaccurate current bandwidth 2ib and the appearance of the peak-to-average current error. a possible solution for this issue is to directly measure the instantaneous peak-to-peak ripple from the measured inductor current. this solution will be considered in the future work. a detailed analysis of adcmc, including small-signal models and design of the output voltage compensator gc(s) are presented in [12] for three types of dc–dc power electronics converters: buck, boost, and non-inverting buck–boost converter. this paper is focused on experimental verification of adcmc of non-inverting buck-boost converter. 3. simulation and experimental results the operation of the non-inverting buck-boost converter under adcmc, with the topology from fig. 2 (a), was verified with simulations in matlab/simulink and experimentally. the parameters of the non-inverting buck-boost converter working in the continuous conduction mode (ccm), which are the same for both simulations and experiments, are listed in table 1. the experimental setup is shown in fig. 3. the developed setup can be used for testing adcmc on various types of converters, because the used prototype is made as a universal four-quadrant (4q) converter, with possibility of easy configuration to the desired topology, such as buck, boost, non-inverting buck-boost, etc. table 1 parameters of the non-inverting buck-boost converter vg [v] 12 l [µh] 220 c [µf] 1000 r [ω] 20 fs [khz] 23 72 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović fig. 3 experimental setup: 1) the prototype of the non-inverting buck-boost converter; 2) electronic module for measurements and inner current loop; 3) pc with built-in mf624 board; 4) driver module; 5) input voltage source of the converter; 6) power supply units; 7) tektronix mso 2014 oscilloscope a separate electronic module, which is connected to mf624 multifunctional data acquisition input/output digital board [13], is used for implementation of the measurements and inner current loop. the measurement of the inductor current, which is necessary for the inner current loop, is performed with lem current transducer hx 10-np [14]. the converter input and output voltage are measured with galvanic isolation via optocoupler il300 [15] and sampled by 14-bit a/d converter (conversion time about 2 µs) of the mf624 board. mf624 board is built into the computer and it provides a real time processing with matlab/simulink environment. an implementation of the outer voltage loop and calculation of the adaptive current bandwidth 2ib for adcmc is performed in real time in simulink, using real time windows target (rtwt) environment. the reference current iref and current boundaries iref+ib and iref-ib are obtained from 14-bit d/a converter of the mf624 board and fed into the inner current loop. the fundamental sampling time for real time operation in simulink was set to 25 μs, which is the minimum sampling time for this hardware. power mosfets irf540n (100 v, 33 a) [16] are used as power switches t1 and t2. a dual-channel galvanically isolated mosfet driver module (turn on/off delay of 0.6 µs) was developed for driving the power switches. a non-inverting buck-boost converter with an adaptive dual current mode control 73 a primary objective of the performed simulations and experiments is to demonstrate that the proposed adcmc can be successfully applied to the non-inverting buck-boost converter, ensuring a stable operation in all operating modes and good dynamical properties, regardless of the application. several cases of the converter operation were tested: in steady state for buck and boost operating modes, during the step changes in the input voltage and the load resistance and during the gradual change of the input voltage. 3.1. operation of the non-inverting buck-boost converter in steady state the output compensator, as a key part of the outer voltage loop, produces the reference current iref for the inner current loop (fig. 2 (a)). in steady state, the reference current practically has a constant value. therefore, in order to test the behavior of the inner current loop in steady state, the outer voltage loop can be disabled and the reference current should be set manually as a constant signal. a testing the operation of the non-inverting buck-boost converter with adcmc in steady state was performed for both cases: with and without the outer voltage loop. when the voltage loop is disabled, two values of the reference current were used to provide buck and boost operating mode. the simulation waveforms of the inductor current in steady state are shown for ire f = 0.5 a (buck mode) in fig. 4 (a) and iref = 5 a (boost mode) in fig. 4 (b). the corresponding experimental waveforms are given in fig. 5 (a), (b). in the second case, a simple proportional-integral (pi) compensator for the regulation of the output voltage was employed. a design procedure for the output voltage compensator is derived in detail in [12]. as in the first case, the both operating modes were considered. the simulation waveforms of the inductor current in steady state are shown for two values of the output voltage: vo = 7 v (buck mode) and vo = 30 v (boost mode), in fig. 4 (c) and fig. 4 (d), respectively. the corresponding experimental results are presented in fig. 5 (c), (d). it is evident from fig. 4 that there is an excellent matching between the reference current and the average value of the inductor current. a very small peak-to-average current error still exists, which can be attributed to the delays in numerical calculation of the simulation. the experimental results from fig. 5 are similar to the simulation results from fig. 4. a small peak-to-average current error appears as a consequence of imperfections of the components used for realization of adcmc. on the basis of the given results from fig. 4 and fig. 5 it can be concluded that adcmc provide a stable operation of the non-inverting buck-boost converter for both values of the duty cycle: d < 0.5 and d > 0.5. 3.2. robustness to the disturbances in the input voltage and load it is very important to evaluate how the converter with certain control is sensitive to the various disturbances which can occur during operation. in this paper, the disturbances such as the step and gradual changes of the input voltage and the step changes in the load resistance were considered. a line regulation, which is defined as converter ability to maintain the specified output voltage despite changes in the input voltage, was tested for adcmc of the non-inverting buckboost converter. 74 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović fig. 4 the simulation waveforms of the inductor current, reference current and current boundaries in steady state, when the outer voltage loop is: a), b) disabled; c), d) enabled fig. 5 the experimental waveforms of the inductor current, reference current and current boundaries in steady state, when the outer voltage loop is: a), b) disabled; c), d) enabled first, the step changes from 12 v to 6 v and vice versa, were introduced in the input voltage. the output voltage was regulated to 9 v. the load resistance was set to r=10 ω. these step changes were performed in order to make a transition from buck to boost mode and vice versa, and to examine the dynamical behavior of adcmc. the waveforms of the output voltage and the inductor current are shown in fig. 6 (a), (b) (simulation) and fig. 7 (experiment). the same parameters of the output voltage compensator were used in both simulations and experiments. a non-inverting buck-boost converter with an adaptive dual current mode control 75 as it is shown from simulation and experimental results, the converter naturally crosses from buck to boost mode and vice versa. due to adaptation of the current bandwidth 2ib, the transition of the inductor current from one mode to another is smooth, which gives satisfactory line regulation. fig. 6 the simulation waveforms of the output voltage and the inductor current, for the step changes in the input voltage (a), (b) and the load resistance (c), (d) 76 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović fig. 7 the experimental waveforms of the output voltage (up) and the inductor current (bottom), when the input voltage changes from 12 v to 6 v (left) and vice versa (right) fig. 8 the experimental waveforms of the output voltage (up) and the inductor current (bottom), when the load resistance changes from 20 ω to 10 ω (left) and vice versa (right) a non-inverting buck-boost converter with an adaptive dual current mode control 77 fig. 9 the experimental waveforms of the output voltage, when the input voltage changes from 6 v to 12 v (up) and vice versa (bottom), for σ=100, 150, 200 and 500 fig. 10 the experimental waveforms of the output voltage, when the load resistance changes from 10 ω to 20 ω (up) and vice versa (bottom), for σ=100, 150, 200 and 500 78 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović in order to test a step load response, step changes in the load resistance from r=20 ω to r=10 ω and vice versa were performed. the output voltage was regulated to 20 v. the simulation and experimental waveforms of the output voltage and the inductor current are shown in fig. 6 (c), (d) and fig. 8, respectively. it is evident that adcmc successfully reject the introduced load disturbances. the transient response in the output voltage for the considered step disturbances depends also on the designed output voltage compensator, as it is shown in fig. 9 and fig. 10. several values of parameter σ, which determines the transient response time (about 5/σ) and the gains of the pi compensator [12], are considered. it is evident from the given experimental results from fig. 9 and fig. 10 that better responses regarding the transient response time and over/undershoot are obtained for higher values of the adjustable parameter σ. the optimization of the output voltage compensator is not subject in this paper. the aim was to obtain satisfactory results in accordance with the design procedure from [12] (the chosen settling time is about 10-50 ms). also, the output voltage loop is designed to be slow in order to emphasize the behavior of the inner current loop. fig. 11 the experimental waveforms of the output voltage (up) and the inductor current (bottom), for the gradual change of the input voltage from 15 v to 5 v (left) and vice versa (right) besides the step changes, a gradual linear change in the input voltage was also introduced in the experiments. the input voltage was gradually changed from 15 v to 5 v and vice versa, while the output voltage was regulated to 10 v, in order to make a gradual transition from buck to boost mode and vice versa. the experimental results are shown in fig. 11. it is obvious that adcmc is robust against these changes. the output voltage is successfully regulated, without any disruptions between two operating modes. a non-inverting buck-boost converter with an adaptive dual current mode control 79 4. conclusion in this paper, an implementation of a novel adcmc method on the non-inverting buck-boost converter has been presented. the given simulation and experimental results confirm that there is no need for the detection of converter operating modes, because this method ensures a natural and stable transition between the buck and the boost mode, and vice versa. the given results show that adcmc provides a stable operation of the noninverting buck-boost converter for the entire range of duty cycle from 0 to 1. also, it is robust against the disturbances, such as the step and gradual changes in the input voltage and the step changes in the load resistance, with good dynamical performances. the following task will be the using of the proposed adcmc of the non-inverting buckboost converter in various popular applications, such as battery chargers/dischargers, led drivers, etc., and to compare it with other relevant methods in the same applications. references [1] m. a. khan, a. ahmed, i. husain, y. sozer and m. badawy, "performance analysis of bidirectional dc–dc converters for electric vehicles", ieee trans. ind. appl., vol. 51, no. 4, pp. 3442-3452, july/aug. 2015. [2] i. aharon, a. kuperman and d. shmilovitz, "analysis of dual-carrier modulator for bidirectional noninverting buck–boost converter", ieee trans. power electron., vol. 30, no. 2, pp. 840-848, feb. 2015. [3] wei chia-ling, chen chin-hong, wu kuo-chun and ko i-ting, "design of an average-current-mode noninverting buck–boost dc–dc converter with reduced switching and conduction losses", ieee trans. power electron., vol. 27, no. 12, pp. 4934-4943. [4] c.-h. tsai, y.-s. tsai and h.-c. liu, "a stable mode-transition technique for a digitally controlled non-inverting buck–boost dc–dc converter", ieee trans. ind. electron., vol. 62, no. 1, pp. 475-483, jan. 2015. [5] g. k. andersen and f. blaabjerg, "current programmed control of a single-phase two-switch buck-boost power factor correction circuit", ieee trans. ind. electron., vol. 53, no. 1, pp. 263-271, feb. 2006. [6] t.-f. wu, c.-l. kuo, k.-h. sun, y.-k. chen, y.-r. chang and y.-d. lee, "integration and operation of a single-phase bidirectional inverter with two buck/boost mppts for dc-distribution applications", ieee trans. power electron., vol. 28, no. 11, pp. 5098-5106, nov. 2013. [7] l. feng and m. dongsheng, "design of digital tri-mode adaptive-output buck–boost power converter for power-efficient integrated systems", ieee trans. ind. electron., vol. 57, no. 6, pp. 2151-2160, june 2010. [8] haifeng fan, "design tips for an efficient non-inverting buck-boost converter", analog applications journal, texas instruments, pp. 20-25, 2014. [9] linear technology, "60v 4-switch synchronous buck-boost led driver controller", lt3791 datasheet, rev. b, 2012. available: http://cds.linear.com/docs/en/datasheet/3791fb.pdf. [10] a. v. anunciada and m. m. silva, "a new current mode control process and applications", ieee trans. power electron., vol. 6, no. 4, pp. 601–610, oct. 1991. [11] s. lale, m. šoja, s. lubura and m. radmanović, "modeling and analysis of new adaptive dual current mode control", in proceedings of the 10th international symposium on industrial electronics indel 2014, vol. 10, no. t-02, pp. 73–76. [12] available: http://www.indel.etfbl.net/resources/proceedings_2014/indel_2014_paper_11.pdf. [13] s. lale, m. šoja and s. lubura, "a modified dual current mode control method with an adaptive current bandwidth", int. j. circ. theor. appl., 2015. [14] humusoft, "mf624 multifunction i/o card", mf624 user’s manual, 2014. available: http://www2.humusoft.cz/www/datacq/manuals/mf624um.pdf. [15] lem, "current transducer hx 05..15-np", hx 10-np datasheet. available: http://www.lem.com/docs/ products/hx%205_15-np_e%20v10.pdf. 80 s. lale, m. šoja, s. lubura, d. d. manĉić, m. đ. radmanović [16] vishay semiconductors, "linear optocoupler, high gain stability, wide bandwidth", il300 datasheet. available: http://www.vishay.com/docs/83622/il300.pdf. [17] international rectifier, "hexfet® power mosfet", irf540n datasheet. available: http://www.irf.com/ product-info/datasheets/data/irf540n.pdf. 404.indd facta universitatis series: electronics and energetics vol. 27, no. 4, december 2014, pp. 649 – 661 a double-differential-input / differential-output fully complementary and self-biased asynchronous cmos comparator vladimir milovanović and horst zimmermann institute of electrodynamics, microwave and circuit engineering faculty of electrical engineering and information technology vienna university of technology (tu wien) gußhausstraße 27, a-1040 wien, austria abstract: a novel fully complementary and fully differential asynchronous cmos comparator architecture, that consists of a two-stage preamplifier cascaded with a latch, achieves a sub-100 ps propagation delay for a 50mvpp and higher input signal amplitudes under 1.1v supply and 2.1mw power consumption. the proposed voltage comparator topology features two differential pairs of inputs (four in total) thus increasing signal-to-noise ratio (snr) and noise immunity through rejection of the coupled noise components, reduced evenorder harmonic distortion, and doubled output voltage swing. in addition to that, the comparator is truly self-biased via negative feedback loop thereby eliminating the need for a voltage reference and suppressing the influence of process, supply voltage and ambient temperature variations. the described analog comparator prototype occupies 0.001mm2 in a purely digital 40 nm lp (low power) cmos process technology. all the above mentioned merits make it highly attractive for use as a building block in implementation of the leadingedge system-on-chip (soc) data transceivers and data converters. keywords: comparator, preamplifier, latch, cmos, fully-differential, pvt variations, noise immunity, self-biasing, data converters, adc, transceivers. manuscript received august 9, 2014; received in revised form october 9, 2014 ∗ an earlier version of this manuscript received the best oral paper award at the 29th international conference on microelectronics (miel 2014), belgrade, 12-14 may, 2014. [1] corresponding author: vladimir milovanović institute of electrodynamics, microwave and circuit engineering (emce), vienna university of technology (tu wien), gußhausstraße 25-29/e354, a-1040 vienna, österreich. e-mail: vladimir.milovanovic@tuwien.ac.at 649 facta universitatis series: electronics and energetics vol. 27, no. 4, december 2014, pp. 649 – 661 a double-differential-input / differential-output fully complementary and self-biased asynchronous cmos comparator vladimir milovanović and horst zimmermann institute of electrodynamics, microwave and circuit engineering faculty of electrical engineering and information technology vienna university of technology (tu wien) gußhausstraße 27, a-1040 wien, austria abstract: a novel fully complementary and fully differential asynchronous cmos comparator architecture, that consists of a two-stage preamplifier cascaded with a latch, achieves a sub-100 ps propagation delay for a 50mvpp and higher input signal amplitudes under 1.1v supply and 2.1mw power consumption. the proposed voltage comparator topology features two differential pairs of inputs (four in total) thus increasing signal-to-noise ratio (snr) and noise immunity through rejection of the coupled noise components, reduced evenorder harmonic distortion, and doubled output voltage swing. in addition to that, the comparator is truly self-biased via negative feedback loop thereby eliminating the need for a voltage reference and suppressing the influence of process, supply voltage and ambient temperature variations. the described analog comparator prototype occupies 0.001mm2 in a purely digital 40 nm lp (low power) cmos process technology. all the above mentioned merits make it highly attractive for use as a building block in implementation of the leadingedge system-on-chip (soc) data transceivers and data converters. keywords: comparator, preamplifier, latch, cmos, fully-differential, pvt variations, noise immunity, self-biasing, data converters, adc, transceivers. manuscript received august 9, 2014; received in revised form october 9, 2014 ∗ an earlier version of this manuscript received the best oral paper award at the 29th international conference on microelectronics (miel 2014), belgrade, 12-14 may, 2014. [1] corresponding author: vladimir milovanović institute of electrodynamics, microwave and circuit engineering (emce), vienna university of technology (tu wien), gußhausstraße 25-29/e354, a-1040 vienna, österreich. e-mail: vladimir.milovanovic@tuwien.ac.at 649 facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 649 662 doi: 10.2298/fuee1404649m received august 9, 2014; received in revised form october 9, 2014 *an earlier version of this manuscript received the best oral paper award at the 29th international conference on microelectronics (miel 2014), belgrade, 12-14 may, 2014. [1] corresponding author: vladimir milovanović institute of electrodynamics, microwave and circuit engineering (emce), vienna university of technology (tu wien), gußhausstraße 25-29/e354, a-1040 vienna, österreich (e-mail: vladimir.milovanovic@tuwien.ac.at) 650 v. milovanović and h. zimmermann 1 introduction after amplifiers, comparators are perhaps the second most widely used analog electronic component. analog comparators can be used to determine whether one input value is higher or lower than the other one at specific time points (predefined by the clock signal) or to perform the comparisons in an asynchronous manner, that is, to detect the time point at which the difference of the two input signals has changed its sign. these two comparator types are usually classified as dynamic (clocked) comparators and asynchronous (or open-loop), respectively. further, the compared signal may be any analog physical (i.e., electrical) quantity, like current, voltage, but also charge or even time. this paper settles its contribution in the field of the so-called asynchronous (non-clocked) analog voltage comparators. both asynchronous/open-loop [2] and dynamic/synchronous [3] comparator types, are in a widespread use in switched-mode power supplies as well as in the present-day data conversion [4] and/or transmission circuits [5]. after all comparator itself is nothing else but the single-bit analog-to-digital converter (adc). often, they are the critical design components as, for example, data converters’ bandwidth and maximum (over-)sampling rate directly depend on comparator’s propagation delay. moreover, an analogto-digital converter’s resolution, expressed in terms of signal-to-noise and distortion ratio or effective number of bits, is largely influenced by the comparator’s noise figure and its input-referred noise. finally, on the one hand, comparators should be high speed/low noise, while on the other, for use in battery-powered applications, they should consume as less power as possible. the basic idea behind high-speed analog voltage comparators is in combination of the best aspects of a preamplifier with the negative exponential step response with a latch that exhibits the positive exponential rise. the v−in v+in v+intermediate v−intermediate v−out v+out preamplifier latch vss vdd vss vss vdd vdd fig. 1. fully differential asynchronous voltage comparator that exploits a preamplifierlatch cascade to achieve fast decision making and thereby high operating speeds. 650 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 651 a fully differential self-biased asynchronous cmos comparator 651 v−in2 v+in2 v−in1 v+in1 v+intermediate v−intermediate v−out v+out preamplifier latch vss vdd vss vss vdd vdd fig. 2. fully differential high-speed preamplifier-latch asynchronous voltage comparator that features two pairs of differential inputs (four in total) on the preamplifier. preamplifier is used to build-up the input voltage difference up to a certain point where the latch takes over and brings the signal to rail. both clocked and non-clocked comparators can exploit these speed-up principles. a blocklevel representation of a high-speed asynchronous comparator consisting of a preamplifier-latch cascade is given in fig. 1. it is advantageous for high-speed asynchronous voltage comparators to utilize fully differential signaling as it brings with itself increased noise immunity by rejection of the coupled noise components, reduced even-order harmonic distortion, and doubled output voltage swing. besides using differential output as the one of fig. 1, the overall noise performance benefits could also be induced from the comparator version of fig. 2 that features the preamplifier stage with two pairs of differential inputs (four in total). this article presents a high-speed asynchronous cmos voltage comparator implementation which exploits two differential pairs of inputs and is suitable for incorporation in the cutting-edge systems on chip (socs). 2 four-input asynchronous comparator topology transistor-level and block-level schematics of the proposed complementary and fully differential self-biased asynchronous cmos voltage comparator that features two pairs of inputs are shown in fig. 3 and fig. 4, respectively. the comparator is comprised out of three fully differential self-biased cmos voltage amplifiers that share identical circuit topology, and a cmos latch. inputs of two amplifiers (four in total) at the same time act as the comparator inputs, while the biasing nodes and respective outputs of these two amplifiers are connected to each other in parallel, thus constituting the first preamplifier stage. the third amplifier is cascaded to the outputs of the first two, hence effectively forming the preamplifier’s second stage. the 650 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 651 652 v. milovanović and h. zimmermann v+in1 v−in1 v+in2 v−in2 v′up1 v′down1 v′up2 v′down2 n1l bias n1r bias n1l ibias n1r ibiasn1l iout n1r io p1l bias p1r bias p1l ibias p1r ibiasp1l io p1r io v′bias n1l bias n1r bias n1l ibias n1r ibiasn1l io n1r iout p1l bias p1r bias p1l ibias p1r ibiasp1l io p1r io v′+out v′−out r′ r′ r′ r′ v′′+in v′′−inv ′ ′ b ia s v′′+out v′′−out v′′up v′′down n2l bias n2r bias n2l ibias n2r ibias n2l iout n2r iout p2l bias p2r bias p2l ibias p2r ibias p2l iout p2r iout r′′ r′′ v+inl v−inl v+out v−out nl inv nr invnl latch nr latch nl rail nr rail pl inv pr invpl latch pr latch pl rail pr rail vdd vdd vdd vdd vdd vdd vdd vdd vdd vdd fig. 3. transistor-level schematic of the proposed self-biased asynchronous cmos analog voltage comparator which features two pairs of differential inputs and differential output. amplifiers constructing the first preamplifying stage are mutually identical (corresponding transistor sizes of both are matched), but are different from the one serving as the second preamplifying stage (meaning, its transistor sizes are optimized independently). finally, preamplifier is cascaded with a 652 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 653 a fully differential self-biased asynchronous cmos comparator 653 v+in1 v−in1 v+in2 v−in2 1st stage 1/2 1st stage 2/2 v′−out v′+out v′−out v′+out v ′ b ia s v′′+in v′′−in 2nd stage v′′−out v′′+out v−inl v+inl latch vss vss vdd vdd vss vdd vss vss vdd vdd v+out v−out fig. 4. block-level schematic of the proposed self-biased asynchronous analog voltage comparator which features two pairs of differential inputs and differential output of fig. 3. simple latch whose outputs are at the same time the comparator outputs. inputs of each of the three fully differential self-biased inverter-based cmos amplifiers [5, 6] are amplified through the push-pull inverters consisting of transistors nxx iout and pxx iout, thus rendering the outputs of that particular amplifier. the cmos inverters at the inputs bring with themselves inherent advantages like very high input impedance and nominally doubled transconductance. the biasing of each stage is accomplished through complementary transistor pairs nxx bias and pxx bias which are controlled by vbias and are operating deep within the linear region. this potential is in turn stabilized through the negative feedback loop utilizing nxx ibias and pxx ibias. namely, any variation in processing parameters or operating conditions (change of supply voltage or ambient temperature) that shifts vbias from its nominal value, results in an instant attenuation of these deviations [7] in an extent proportional to the value of the loop gain. as the biasing transistors are operating in the triode region, potentials vdown and vup are very close to the negative and the positive supply rail, respectively. in such configuration, self-biasing is not compromising with the output voltage swing which is nearly equal to the difference between the values of the two supply rails. resistors r′ and r′′ serve to avoid establishment of the low-resistive paths through v′bias and v′′bias nodes, respectively, for high (by absolute value) input voltage differences. placed in the biasing part, the resistors have no impact on comparator performance except that it drastically reduces dissipation while mutually distant potentials are applied as comparator inputs. 652 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 653 654 v. milovanović and h. zimmermann problem of the same kind will also occur in the path through v′+out and v′−out nodes but it cannot be avoided using the resistor trick instead these metal lines must be made thicker in order to sustain higher current values. as already stated, the output of the last preamplifier stage is connected to the input of the latch stage. the latch itself is implemented as the cross-coupled connection of two cmos inverters (composed out of transistors nx latch and px latch). the coupling between the preamplifier’s output and the latch itself is done through inverters consisting of transistors nx inv and px inv. without transistors nx rail and px rail, the coupling inverters should be large/strong enough to have the ability to pull the latch out of the positive feedback saturation, but still small/weak enough not to firmly dictate the output voltage (because having a latch in that case is senseless). connecting these four field-effect transistors to the supply rails relaxes the last requirement and consequently increases design’s reliability and robustness. besides being fully complementary, the proposed asynchronous voltage comparator circuit with two pairs of inputs is also perfectly symmetrical with respect to the vertical and the horizontal axis in fig. 3 and fig. 4, respectively. this is the reason why the biasing transistors on each preamplifier stage are drawn separately. symmetry implies beneficial repercussions on the process of laying the circuit out, as one can naturally match paired devices and the propagation delay through separate circuit blocks. 3 circuit analysis of the comparator architecture analysis of the proposed comparator topology can be accomplished by analyzing two of its subcomponents, namely the preamplifier and the latch. 3.1 preamplifier if the voltage drops across the biasing transistors are neglected, that is, if vdown and vup are approximately at the supply rails, then the small-signal differential gain of the comparator’s preamplifier is just equal to the transfer function of the push-pull inverter and hence it can be written as v ′′+ out − v ′′− out ( v + in1 − v − in1 ) − ( v + in2 − v − in2 ) (s) = hpreamplifier (s) = (1) r′ or ′′ o ( s− g′m/c ′ gd )( s− g′′m/c ′′ gd ) r′ or ′′ oζs 2 + [ r′ o ( c ′ gd + c ′′ gd (1 + g′′mr′′ o) + ci2o1 ) +r′′ o ( c ′′ gd + cl )] s+ 1 , 654 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 655 a fully differential self-biased asynchronous cmos comparator 655 0 time ttx ttot tpreamplifier tlatch tlatch vlatch vx vpreamplifier = gpreamplifier· · [( v+in1 − v−in1 ) − ( v+in2 − v−in2 )] vpreamplifier > vx vx > vlatch v vdd supply voltage rail preamplifier la tc h p re a m p li fi er / l a tc h t im ed o m a in r es p o n se fig. 5. combination of the preamplifier negative exponential step response (dashed line) with the positive exponential initial condition time response of the latch (dash-dotted line). at optimum point (tx, vx), which is at the same time the preamplifier-latch takeover point, the first derivatives of the two curves are the same. this minimizes preamplifier-latch cascade propagation delay ttotal = tpreamplifier+tlatch and makes the combined output signal quicker which implies fast decision making of the proposed asynchronous comparator. where g′m = g′mn+g′mp and g′′m = g′′mn+g′′mp are the total transconductances of the first and the second preamplifier’s stage inverter, respectively, r′ o and r′′ o are the total resistances seen at the output of the first and at the output of the preamplifier’s second stage, c ′ gd = c ′ gdn+c ′ gdp and c ′′ gd = c ′′ gdn+c ′′ gdp are the sums of the gate-drain capacitances of the nmos and pmos of the first and the second preamplifier’s stage, respectively. for simplicity reasons, ζ = cl ( c ′ gd + c ′′ gd + ci2o1 ) + c ′′ gd ( c ′ gd + ci2o1 ) is introduced, while ci2o1 is the total capacitance at the output of the first and the input of the second preamplifier stage and cl is the total load capacitance at the output of the preamplifier or at the input of the latch. it may be observed that the transfer function (1) in which s = σ + iω is the complex angular frequency, is of the second order with two real left complex half-plane poles. it also possesses two real high frequency right complex half-plane zeroes at frequencies z1 = g′m/c ′ gd and z2 = g′′m/c ′′ gd. the step response of the preamplifier can be predicted based on its transfer function. if the effect of the two high frequency zeroes, z1 and z2 is neglected, together with the dominant pole approximation, the system’s step 654 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 655 656 v. milovanović and h. zimmermann response may be written as v′′+out (t)− v′′−out (t) = l−1 {hpreamplifier (s) /s} ≈ (2) ≈ gpreamplifier [( v+in1 − v−in1 ) − ( v+in2 − v−in2 )] [1− κ exp (−t/τa)]u (t) , where gpreamplifier and τa are the preamplifier low frequency gain and time constant which is inversely proportional to the value of the dominant pole, κ is a constant dependent on coefficients of the polynomial found in the transfer function denominator, while u (t) and l−1 represent the heaviside step function and the inverse laplace transform operator, respectively. 3.2 latch if the initial voltage that is applied to the latch output nodes (through the preamplifier-latch coupling inverters) at specified time point t′ is v+out (t ′)− v−out (t ′), then the time response of the linearized latch approximation on this initial condition (for t ≥ t′ and ∆t = t− t′) has the form of an exponentially increasing [8] function of time ∆t and can be written as v+out (t)− v−out (t) = exp(∆t/τl) [ v+out ( t′ ) − v−out ( t′ )] . (3) the time constant of the portrayed cross-coupled cmos inverter latch is approximately equal to τl ≈ c/gml, where c is the total capacitance seen at the output of the latch, i.e., comparator, while gml = gmnl + gmpl is the total transconductance of the latch complementary transistor pair. note that this is a typical temporal response of positive-feedback systems which have a single or a dominant real right complex half-plane pole. 4 operating principles of the described comparator as already stated in the introduction, the basic idea behind the presented comparator is in combination of the best aspects of the preamplifier, which is characterized by the negative exponential step response (2), with the positive exponential response (3) latch. the preamplifier builds up the voltage up to a certain point where the latch takes over and brings the signal to a rail. the previous principle concepts are illustrated in fig. 5. in this figure, the preamplifier gain times the input voltage alone is not sufficient for the output to reach the rail. nevertheless, it achieves a high enough output value to pull the latch out of one saturation state and trigger its positive feedback loop that drives the comparator to the saturation state on another supply rail, thus producing a firm logical level (high or low) at the output. 656 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 657 a fully differential self-biased asynchronous cmos comparator 657 comparator + output buffers in2− in2+ in1− in1+ 5 0 ω 5 0 ω 5 0 ω 5 0 ω comparator chain of inverters as output drivers ✏✏✶ ron = 50ω��� capable of driving pad capacitance and 50ω measurement equipment out+ out− delay(comparator)=delay(comparator+buffers)−delay(buffers) output buffers only (for delay subtraction) in+ in− 50ω 50ω dummy comparator actually a shortcut chain of inverters as output drivers ✏✏✶ ron = 50ω��� these inverters are identical to the ones that come after the comparator out+ out− fig. 6. on-chip comparator structure with output buffers and the corresponding dummy comparator structure used for exact extraction of the comparator’s propagation delay. with the total propagation delay through the comparator being the sum of propagation delays of the cascaded components it consists of, namely, ttotal = tpreamplifier + tlatch , (4) it is obvious that reducing the time constants of the separate comparator subcircuits (τa and τl) is essential to increase its speed of operation. additionally, it can be proven that there exists the optimum preamplifier-latch takeover point (tx, vx) that is located in the point where the first derivatives of the preamplifier and the latch function are equal. this was somewhat expected and hence for high-speed applications the comparator should be optimized such that the subcomponent function that has larger first derivative of the two is used for the corresponding part of the characteristics. apart from acceleration, another role of the latch block is also to align comparator’s complementary output fall-time and rise-time edges. 656 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 657 658 v. milovanović and h. zimmermann b u ff er s o n ly o u t + & [v ] time elapsed after the fixed moment in time t [ns] b u ff er s o n ly in + & [v ] c o m p a ra to r o u t + & [v ]c o m p a ra to r in 2 + & [v ] c o m p a ra to r in 1 + & [v ] t+ 1 t+ 2 t+ 3 t+ 4 t+ 5 t+ 6 t+ 7 t+ 8 t+ 9 0 0.2 0.4 0.6 0.0 0.55 1.1 0 0.2 0.4 0.6 0.53 0.55 0.57 0.53 0.55 0.57 p seu d o ra n d o m b in a ry seq u en ce 2 3 1 − 1 freq u en cy f = 3 .3 3 g h z ✻ ❄ 50mvpp ✻ ❄ 50mvpp ✻ ❄ 0.55vpp ✻ ❄ 1.1vpp ✻ ❄ 0.55vpp ❄ d iff eren ce: c o m p a r a t o r d e la y t d e la y fig. 7. measured inputs and outputs of the on-chip structure containing asynchronous voltage comparator featuring two pairs of differential inputs with output drivers and the corresponding on-chip dummy comparator structure containing the output drivers alone. 5 on-chip measurement setup for propagation delay the output of the latch, which is at the same time the comparator output, has rail-to-rail swing and is hence designed to be cascaded by some digital circuitry which regularly features relatively low input capacitance with respect to a pad capacitances. to measure the comparator characteristics in a realistic configuration a chain of several inverters which drive the pad capacitance and the 50ω measurement equipment follows each of the comparator outputs as shown in fig. 6. both transistors in the last inverter are designed to have the on-resistance of ron = 50ω to avoid reflection thus halving the output signal amplitude to vdd/2. for the same reason all four inputs have 50ω on-chip termination to ground. to enable indirect delay measurement of the comparator, output drivers are also placed on chip, on their own, as explained by fig. 6. special attention is paid so that the metal lines routed to and off the comparator (with the output drivers) and the output drivers alone 658 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 659 a fully differential self-biased asynchronous cmos comparator 659 fig. 8. oscilloscope display showing an eye pattern for the two comparator outputs that are connected to channels 1 and 2. input pseudorandom sequence’s frequency is 3.33ghz. are identical in every aspect. this enabled the use of identical printed circuit boards, identical coaxial cables and finally identical measurement equipment to drive and characterize both on-chip structures. thus, delay of the comparator is obtained as the difference between the delay of the structure with comparator plus output buffers and the delay of the dummy structure containing the buffers only. the previous subtraction eliminates the influence of coaxial cables, printed circuit board microstrip lines, on-chip metal lines, etc., which were identical for both measurements and are therefore canceled out in the process of delay subtraction. additionally, the output drivers are optimized for small propagation delay variation, the standard deviation of which is σ(delay) < 5 ps based on one thousand monte-carlo simulations and the sample of ten relative on-chip measurements. also, the comparator and the buffers have separate supply pads (i.e., analog and digital, respectively) to enable power consumption measurement of the comparator alone. measured inputs and outputs of the on-chip characterization structures depicted in fig. 6, driven by pseudorandom binary sequence signal with frequency of 3.33ghz, are shown in fig. 7 in a form of an oscilloscope screenshot. it can be observed that the structure containing buffers only is always driven with rail-to-rail signal resembling the comparator outputs. difference between the two outputs yields the comparator propagation delay. 658 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 659 660 v. milovanović and h. zimmermann 1.05mm ✲✛ 0 .7 7 m m ✻ ❄ ✄ ✂ � ✁ ✄ ✂ � ✁ ✞ ✝ ☎ ✆ ✄ ✂ � ✁✄ ✂ � ✁ 11.96× 25.4µm2 ❅❅❘ ✻✻ output drivers 39.2× 25.5µm2 ❅❅❘ ✻ comparator d g o o g d g i i g a g i g i g a g i i g g g o o g g fig. 9. test chip photomicrograph. abbreviations: (g) ground, (a) analog supply, (d) digital supply, (i) input, (o) output. left – output buffers; right – four-input comparator. 6 measurement results of the proposed comparator having in mind reasonable power consumption, the described comparator is optimized for speed and is fabricated in a standard 1p8m digital 40 nm low power multi-threshold cmos process technology shrank to 90% (minimum transistor gate length 36 nm). to optimize latency and power the exploited technology offers transistors with three different values of threshold voltage. threshold voltages for low-vt transistor types, which are used in the design to minimize propagation delay, are around vtn/vtp ≈ 0.33v/−0.28v, while the nominal supply voltage for the given process is vdd = 1.1v. the propagation delay of the comparator with two pairs of inputs, measured in the upper described manner, is lower than 100 ps for the 50mvpp step applied at both of its differential inputs. total power dissipation of the comparator under these circumstances equals 2.1mw and is dominated by the preamplifier’s static consumption. ergo, the dc current consumption accounts for the major part of the total comparator’s power consumption. measured eye diagram of the comparator at 3.33ghz, what was the limit of stimulus equipment, is shown in fig. 8, however, based on the propagation delay measurements, the eye opening should be present up to 10ghz. test chip photomicrograph is given in fig. 9. our proposed four-input comparator design implementation occupies an area of 39.2 × 25.5µm2. 660 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 661 a fully differential self-biased asynchronous cmos comparator 661 7 conclusions the article presents a prototype of a novel fully differential asynchronous comparator topology that features two-pairs of inputs and is implemented in 40 nm lp cmos technology. the comparator consists of a preamplifierlatch cascade and is completely self-biased thus overcoming the need for a reference circuit and reducing the influence of pvt variations. comparator propagation delay is extracted using subtractive method which exploits onchip dummy output driver structures. measurements indicate that, depending on the actual input signal amplitude and common-mode, the comparator can operate at frequencies beyond 10ghz under dissipation of 2.1mw. although both comparator delay and its power consumption greatly depend on the input signal amplitude and common-mode value, this still places it among the fastest non-clocked comparators published up to date. finally, the proposed comparator circuit is well-suitable for implementation in the cutting-edge system-on-chip (soc) data transceivers and data converters. acknowledgements the authors would like to express their gratitude to lantiq a and austrian bmvit for their financial support of the fit-it project xplc via ffg. references [1] v. milovanović and h. zimmermann, “a two-differential-input / differentialoutput fully complementary self-biased open-loop analog voltage comparator in 40 nm low power cmos,” in proceedings of the 29th international conference on microelectronics — miel 2014, may 2014, pp. 355–358. [2] t. sepke et al., “comparator-based switched-capacitor circuits for scaled cmos technologies,” in isscc dig. tech.papers, feb. 2006, pp. 812–821. [3] d. schinkel et al., “a double-tail latch-type voltage sense amplifier with 18 ps setup+hold time,” in isscc dig. tech.pap., feb. 2007, pp. 314–315. [4] v. srinivasan et al., “a 20mw 61 db sndr (60mhz bw) 1 b 3rd-order continuous-time delta-sigma modulator clocked at 6ghz in 45 nm cmos,” in isscc dig. tech.papers, feb. 2012, pp. 812–821. [5] c.-y. yang and s.-i. liu, “a one-wire approach for skew-compensating clock distribution based on bidirectional techniques,” ieee journal of solid-state circuits, vol. 36, no. 2, pp. 266–272, feb. 2001. [6] m.-c. huang and s.-i. liu, “a fully differential comparator-based switchedcapacitor ∆σ modulator,” ieee transactions on circuits and systems ii: express briefs, vol. 56, no. 5, pp. 369–373, may 2009. [7] m. bazes, “two novel fully complementary self-biased cmos differential amplifiers,” ieee j. of solid-state circuits, vol. 26, no. 2, pp. 165–168, feb. 1991. [8] b. j. mccarroll et al., “a high-speed cmos comparator for use in an adc,” ieee journal of solid-state circuits, vol. 23, no. 1, pp. 159–165, feb. 1988. 660 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator 661 a fully differential self-biased asynchronous cmos comparator 661 7 conclusions the article presents a prototype of a novel fully differential asynchronous comparator topology that features two-pairs of inputs and is implemented in 40 nm lp cmos technology. the comparator consists of a preamplifierlatch cascade and is completely self-biased thus overcoming the need for a reference circuit and reducing the influence of pvt variations. comparator propagation delay is extracted using subtractive method which exploits onchip dummy output driver structures. measurements indicate that, depending on the actual input signal amplitude and common-mode, the comparator can operate at frequencies beyond 10ghz under dissipation of 2.1mw. although both comparator delay and its power consumption greatly depend on the input signal amplitude and common-mode value, this still places it among the fastest non-clocked comparators published up to date. finally, the proposed comparator circuit is well-suitable for implementation in the cutting-edge system-on-chip (soc) data transceivers and data converters. acknowledgements the authors would like to express their gratitude to lantiq a and austrian bmvit for their financial support of the fit-it project xplc via ffg. references [1] v. milovanović and h. zimmermann, “a two-differential-input / differentialoutput fully complementary self-biased open-loop analog voltage comparator in 40 nm low power cmos,” in proceedings of the 29th international conference on microelectronics — miel 2014, may 2014, pp. 355–358. [2] t. sepke et al., “comparator-based switched-capacitor circuits for scaled cmos technologies,” in isscc dig. tech.papers, feb. 2006, pp. 812–821. [3] d. schinkel et al., “a double-tail latch-type voltage sense amplifier with 18 ps setup+hold time,” in isscc dig. tech.pap., feb. 2007, pp. 314–315. [4] v. srinivasan et al., “a 20mw 61 db sndr (60mhz bw) 1 b 3rd-order continuous-time delta-sigma modulator clocked at 6ghz in 45 nm cmos,” in isscc dig. tech.papers, feb. 2012, pp. 812–821. [5] c.-y. yang and s.-i. liu, “a one-wire approach for skew-compensating clock distribution based on bidirectional techniques,” ieee journal of solid-state circuits, vol. 36, no. 2, pp. 266–272, feb. 2001. [6] m.-c. huang and s.-i. liu, “a fully differential comparator-based switchedcapacitor ∆σ modulator,” ieee transactions on circuits and systems ii: express briefs, vol. 56, no. 5, pp. 369–373, may 2009. [7] m. bazes, “two novel fully complementary self-biased cmos differential amplifiers,” ieee j. of solid-state circuits, vol. 26, no. 2, pp. 165–168, feb. 1991. [8] b. j. mccarroll et al., “a high-speed cmos comparator for use in an adc,” ieee journal of solid-state circuits, vol. 23, no. 1, pp. 159–165, feb. 1988. 662 v. milovanović, h. zimmermann fully differential self-biased asynchronous cmos comparator pb 10413 facta universitatis series: electronics and energetics vol. 35, no 4, december 2022, pp. 469-482 https://doi.org/10.2298/fuee2204469g © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design of a four stages vco using a novel delay circuit for operation in distributed band frequencies mriganka gogoi1,2, pranab kishore dutta1 1assam don bosco university, department of ece, india 2north eastern regional institute of science and technology, department of ece, india abstract the manuscript proposes a novel architecture of a delay cell that is implemented in 4-stage vco which has the ability to operate in two distributed frequency bands. the operating frequency is chosen based on the principle of carrier mobility and the transistor resistance. the vco uses dual delay input techniques to improve the frequency of operation. the design is implemented in cadence 90nm gpdk cmos technology and simulated results show that it is capable of operating in dual frequency bands of 55 mhz to 606 mhz and 857 mhz to 1049 mhz. at normal temperature (270) power consumption of the circuit is found to be 151μw at 606 mhz and 157μw at 1049 mhz respectively and consumes an area of 171.42µm2. the design shows good tradeoff between the parameters-operating frequency, phase noise and power consumption. key words: ring oscillator, voltage controlled oscillator (vco), tuning range 1. introduction phase lock loop (pll), one of the key elements of contemporary wireless digital signal processing and instrumentation systems, is crucial for improving the performance of this electronic component. the parameters associated with vco like operating frequency range, power dissipation and phase noise have important contribution towards the improvement of the pll. there are two widely used vcos topologies and they are lc and ring vcos. the former has a high resolution and frequency, but the operating frequency range is limited and the chip surface is big. the latter has many advantages like wide tuning range, easy integration, low chip area, multiphase clock and low power consumption; however, it has a low resolution and poor phase noise performance [1]. ring vcos are divided into two sorts based on their delay stages. 1) vco with a single-ended ring (sero) and 2) vco with a differential ring received january 10, 2022; revised june 22, 2022 and november 15, 2022; accepted december 3, 2022 corresponding author: pranab kishore dutta associate professor, department of ece, nerist, itanagar, arunachal pradesh, 791109,india e-mail: pkdutta07@gmail.com 470 m. gogoi, p. k. dutta (dro). seros consume less area compared to dros but have more noise and hence less efficient [3-7]. dros are more resilient to common mode noise and have a lower swing. delay cell is the basic element of differential configuration oscillators. many such delay cells were proposed by different researchers at different times. maneatis et al proposed a delay cell that was used to design a ring oscillator which could oscillate with an operating frequency of 141 mhz. the delay cell was based on a source coupled pair [8]. a wide operating frequency three stage vco was proposed by yan et al that could operate in frequency range of 1.3 to 1.8 ghz, however the power consumption was comparatively high [9]. park et al designed a 4 stage ring oscillator with low phase noise and operates in 900 mhz. the phase noise was found to be -101 dbc/hz at 100 khz [10]. tu et al. proposed a novel delay circuit and used it to design two stages voltage controlled oscillator whose operating range was from 2.5 ghz to 5.2 ghz for a supply voltage of 1.8v. however due to lesser number of stages the phase noise achieved was -90.1 dbc/hz at offset frequency of 1 mhz [11]. sheu et al proposed a new differential delay cell which was implemented in three stages vco, the tuning range was found to be 479 mhz to 4.09 ghz with phase noise -93.3 dbc/hz at offset frequency of 1 mhz [12]. parvizi et al. proposed design of ring oscillators using two topologies which are differential and single-ended. to reduce stage delay and boost tuning range, the vco used a feed-forward technique and load in terms of inductive impedance [13]. a pll was designed by shruti suman et al by proposing an improved performance vco. the operating frequency varied from 2.26 ghz to 3.44 ghz with the help of a controlled voltage changed from 1v to 3v but they did not focus on phase noise[14]. a delay cell for using in ring oscillator with dual loop was proposed by gao et al, where they also used controlled voltage to tune the frequency range. the design was efficient enough to achieve wideband tuning range while maintaning low phase noise [15]. to determine the optimal dimensions of the vco, gargouri et al proposed a systematic and efficient optimization method and found an optimal trade-off between various specifications [16]. salem et al proposed a fault tolerant delay cell to be used for designing ring oscillator that uses redundant transistor methods to improve relaibility, power dissipation and phase noise [17]. kumar et al presented a vco using nor gate and varactor tuning method with inversion mode [18]. the changes in the varactor width is considered for variation in the operating frequency. however there is still scope for improve in the phase noise. a low noise injection locked vco was proposed by lee et al in which a separate injection signal is employed and the oscillator output locks to the frequency of the injection signal [19]. the circuit showed tuning range having wide frequency and low phase noise with low power consumption. ramazani et al presented some delay cells using basic inverters and current starved inverters to be used for designing vco to achieve better frequency stability [20]. the proposed circuit is oriented towards designing of ring vco with the ability to operate in disributed tuning range while maintaininng decent tradeoff between phase noise and power consumption in differential configuration. thus the novelty of the work lies in allowing the same vco to work in the high as well as low frequency ranges without altering the physical design of the circuit. the subsequent sections of the paper are organized as follows: section 2 deals with proposed vco, section 3 deals with delay circuit analysis, section 4 deals with implementation and section 5 deals with conclusion. design of a four stages vco using a novel delay circuit for operation in distributed band frequencies 471 2. proposed vco even and odd numbers of stages can be used in differential ring oscillators, but an odd number of stages cannot produce both in phase and quadrature phase outputs. frequency of oscillation depends on factors like driving capability, load and number of stages. in addition, when the number of phases increase, the quantity of energy used, the amount of space needed, and the cost increased. additionally, there will be greater phase noise with fewer stages. therefore, maintaining adequate tradeoff between the various performance characteristics requires an optimal design. two stages dro will have tight constrains particularly in oscillations to occur, while three stages limit the output of in phase and quadrature phase, hence we choose to design a four stages vco [21-23]. the designed vco will be applicable in communication systems where multiphase signals are needed like phase array transceivers, fractional frequency synthesizers and clock data recovery circuits. moreover, communication systems demand the need of wide range oscillators to cover a variety of standards across multiple frequency bands [24]. proposed delay cell of the vco is designed using two control frequencies hence this technique is also known as dual frequency control technique [25-26]. it comprises of input vin1+, vin2+, vin1and vin2-, output voltages vout+ , and vout, control voltages vcntr1 and vcntr2. considering tdelay as the delay time of the cell then total delay time of four stages vco will be 4tdelay and hence the operating frequency will be 1/(4tdelay). the proposed delay cell and four-stage vco are depicted in fig.1 and fig.2. the time constants τc and τd estimated during charging and discharging provide a generic equation for finding the oscillation frequency. the following formula is used to compute the time constant: τ = rc (1) where, r is the resistance offered by the charging and discharging path, c is the lumped capacitance that is the combined parasitic capacitances. using τc and τd, time intervals t1 and t2 which are the charging and discharging time intervals of the delay cell are calculated. they are used for determining the oscillating frequency which is given by: 𝑓𝑎 = 1 𝑇1 + 𝑇2 (2) resistance(r) in the time constant formula is the resistance of pmos and nmos transistors respectively, and is given by: 𝑟𝑝 = 1 𝜇𝑝𝐶𝑜𝑥 𝑊 𝐿 (|𝑉𝑔𝑠| − |𝑉𝑡𝑝|) (3) 𝑟𝑛 = 1 𝜇𝑛𝐶𝑜𝑥 𝑊 𝐿 (|𝑉𝑔𝑠| − |𝑉𝑡𝑛|) (4) where 𝜇𝑝 and 𝜇𝑛 are the mobility of pmos and nmos transistors, cox is the oxide capacitances, both transistors channel width and length are w and l, respectively. vgs is the applied gate to source voltage, vtp and vtn are the pmos and nmos threshold voltages. the 472 m. gogoi, p. k. dutta transistors are assumed to be working in triode region and small drain to source voltage vds is neglected. thus, from the formulae it can be clearly interpreted that higher the mobility lower will be the resistance or in other words resistance is inversely proportional to mobility. moreover, resistance is directly proportional to time constant hence oscillating frequency is inversely dependent on resistance and directly dependent on mobility. so, transistor with higher mobility can play crucial role in improving the oscillating frequency. since the mobility of electrons is larger than that of holes, this has an effect on the current flow and time constant, or delay time, which has an additional impact on oscillation frequency. lowering the resistance will result in a shorter delay time and a greater oscillation frequency. since the nmos time constant is lower than the pmos time constant, the oscillation frequency will be higher. this idea inspired us to suggest the delay circuit depicted in figure 1 and utilise it to create the vco depicted in figure 2. fig. 1 delay cell fig. 2 four stages vco design of a four stages vco using a novel delay circuit for operation in distributed band frequencies 473 3. delay circuit analysis the proposed delay cell is for dual loop ring based voltage controlled oscillator [27-29]. the primary loop’s inputs are m1 and m2, while the secondary loop’s inputs are m3 and m4. the dual-loop technique amplifies the oscillation. m13 controls the ring vco’s frequency. the latch’s feedback strength is made up of m5, m6, m7, m8, m9, m10, m11 and m12. thus, it is simple to control the delay time of the latch by controlling vcntr2 while vcntr1 helps in maintaining the vco to operate both in the low frequency and high frequency bands. considering the left part of the delay circuit which deals with vout-, the charging and discharging time can be calculated as shown below: initial condition be vout-=vl and vout+=vo, vl and vo being the minimum and maximum output voltages. the charging time is controlled by vin2and the transistor m3, based on the initial condition m5 will be off, is given by 𝜏1 = 𝑟3𝐶𝑙𝑜𝑎𝑑 (5) 𝑟3is equivalent resistance of mosfet m3 and cload is the parasitic capacitive load associated with vout-. 𝑟3 = 1 𝜇𝑝𝐶𝑜𝑥 𝑊 𝐿 (|𝑉𝑔𝑠| − |𝑉𝑡𝑝|) (6) 𝐶𝐿𝑜𝑎𝑑 = 𝐶𝑑𝑏1 + 𝐶𝑔𝑑1 + 𝐶𝑑𝑏3 + 𝐶𝑔𝑑3 + 𝐶𝑑𝑠3 + 𝐶𝑑𝑏5 + 𝐶𝑔𝑑5 + 𝐶𝑑𝑏7 + 𝐶𝑔𝑑7 + 𝐶𝑑𝑏9 + 𝐶𝑔𝑑9 + 𝐶𝑑𝑏11 + 𝐶𝑔𝑑11 + 𝐶𝑖𝑛_𝑥 (7) where, cin_x is the next stage input capacitance, cdb is drain to body, cgd is gate to drain and cgs is gate to source capacitances of the transistor. across the load capacitance voltage will be 𝑉𝐶𝐿𝑜𝑎𝑑 = 𝑉0 − (𝑉0 − 𝑉𝑙)exp (− 𝑇1 𝜏1 ) (8) suppose in the time interval 𝑇1capacitor charges upto αv0 then α𝑉0 = 𝑉0 − (𝑉0 − 𝑉𝑙)exp (− 𝑇1 𝜏1 ) (9) α is a constant with a value ranging from 0 to 1. 𝑇1 = 𝜏1ln { 𝑉0 − 𝑉𝑙 𝑉0(1 − 𝛼) } (10) in the next state when vout-=v0 and vout+=vl. the discharging phenomenon comprises of both charging and discharging time constants and the effective discharging time τ2 is 𝜏2 = {(𝑟1||(𝑟7 + 𝑟13)) − (𝑟3||𝑟5)}𝐶′𝐿𝑜𝑎𝑑 (11) r1, r5, r7 and r13 represents the equivalent resistances of mosfet m1, m5, m7 and m13. 474 m. gogoi, p. k. dutta 𝐶′𝐿𝑜𝑎𝑑 = 𝐶𝑑𝑏1 + 𝐶𝑔𝑑1 + 𝐶𝑑𝑠1 + 𝐶𝑑𝑏3 + 𝐶𝑔𝑑3 + 𝐶𝑑𝑏5 + 𝐶𝑔𝑑5 + 𝐶𝑑𝑏7 + 𝐶𝑔𝑑7 + 𝐶𝑔𝑑9 + 𝐶𝑑𝑏9 + 𝐶𝑑𝑏11 + 𝐶𝑔𝑑11 + 𝐶𝑖𝑛𝑥 (12) c’load is node capacitance during time t2 now voltage across capacitor c’load can be given by 𝑉𝐶′𝐿 = 𝑉𝑙 − (𝑉𝑙 − 𝛼𝑉0)exp (− 𝑇2 𝜏2 ) ( 123) suppose the capacitor c’load discharges to, βvl in the time interval t2 such that β>1 then β𝑉𝑙 = 𝑉𝑙 − (𝑉𝑙 − 𝛼𝑉0)exp (− 𝑇2 𝜏2 ) (14) 𝑇2 = 𝜏2ln { 𝑉𝑙 − 𝛼𝑉0 𝑉𝑙(1 − β) } (15) 𝑇 = 𝑇1 + 𝑇2 = 𝜏1ln { 𝑉0 − 𝑉𝑙 𝑉0(1 − 𝛼) } + 𝜏2ln { 𝑉𝑙 − 𝛼𝑉0 𝑉𝑙(1 − β) } (16) and finally, fosc=1/4t, for four stage ring vco. fig. 3 delay circuit for low voltage of vcntr1 case 1: when vcntr1 is low (0 to 0.3v), the transistors m9 and m10 become more dominant as both are pmos transistors and they operate in low gate voltage than the m11 and m12 transistors. hence the circuit is found to operate similar to the circuit shown in fig. 3. the normal delay loop’s input pair is m1 and m2, while the skewed delay loop’s input pair is m7 and m8 in the circuit depicted in fig. 3. transistor m1 shuts off when the voltage connected to gate terminal of m1, vin1+, is less than the threshold value. the source current design of a four stages vco using a novel delay circuit for operation in distributed band frequencies 475 of the secondary input transistor m3 is already flowing towards the capacitor associated with output node, vout-, because the input voltage at vin2reaches earlier than at vin1+. this results in reduction of the output node’s rise time. in the delay cell, m5 and m6 combine to form a latch. m9 and m10 are cross-coupled transistors that control the load transistors' maximum gate voltages, as well as the latch strength and frequency of operation. now varying the control voltage vcntr2 will vary the frequency of oscillation. the path delay increases due to the action of pmos transistors m9 and m10, which causes the vco to operate in the low frequency band. fig. 4 delay cell due to high vcntr2 case 2: when vcntr1 is high (0.7v to 1v) the transistors m11 and m12 are more dominant as both are nmos transistors and they operate in higher gate voltage than m9 and m10. the delay circuit is found to work as shown in fig. 4. in this case m11 and m12 are cross-coupled transistors that govern the maximum voltages associated with the gate terminal of the transistors in the load and hence the latch strength and so the frequency of operation. phase noise: several noise elements influence the phase noise in a ring oscillator. the most prevalent types of noise are white noise and flicker noise. in contrast to inverter-based delay cells, differential delay cells operate in class a and consume a steady state current [30]. the main source of flicker noise is the fet that powers the common gate line for all the currents in the delay cells [31]. equation (17) and (18) shows the ssb (single side band) phase noise because of white noise and flicker noise respectively in differential oscillators. l(f) = 2kt i. ln2 [ɤ ( 3 4 veffd + 1 vefft ) + 1 vop ] ( f0 f ) 2 (17) 476 m. gogoi, p. k. dutta l(f) = a kf wlc′oxf ( 1 vefft 2) 2 f0 2 f 3 (18) where, ɤ is noise factor of fet, veffd and vefft are the effective gate voltages of the differential delay cell at balance and unbalanced conditions, vop is actual output voltage, i is tail current, f0 is oscillation frequency, w and l stand for fet’s width and length, a is the ratio of width of fet to that of tail fet and c’ox is the oxide capacitance of nfet (tail transistor). in our design a is considered to be 1 as both w and l are of same length. figure of merit which is used for characterizing vco performance can be obtained from the equation (19) [32]. 𝐹𝑂𝑀 = l(f) − 20log ( f0 f ) + 10log ( 𝑃𝑑𝑐 1𝑚𝑊 ) (19) pdc is the dc power consumption. the dimension of both, nmos and pmos, shown in table 1 are maintained same as the goal is to get the functional circuit in order to confirm the topological idea. table 1 device dimension device aspect ratio nmos pmos m1,m2,m7,m8, m11,m12,m13 m3,m4,m5,m6, m9,m10 120/100 120/100 table 2 variation of the parameters at different temperatures when vcntr1=0.2v and vcntr2 is varied from 0 to 1v (pre layout) temp tuning range power consumption phase noise 1m phase noise 10m 00 42 mhz-672 mhz (93.75%) 160 μw -93.10 dbc/hz -112.36 dbc/hz 100 47 mhz-647 mhz (92.73%) 155 μw 92.94 dbc/hz -112.05 dbc/hz 270 55mhz606 mhz (90.9%) 151 μw -92.07 dbc/hz -111.25 dbc/hz 700 63 mhz-487 mhz (87%) 144 μw -91.86 dbc/hz -111.09 dbc/hz table 3 variation of the parameters at different temperatures when vcntr1=0.77 v and vcntr2 is varied from 0 to 1v (pre layout) temp tuning range power consumption phase noise 1m phase noise 10m 00 1040 mhz-1230` mhz (15.44%) 169 μw -93.42 dbc/hz -112.83dbc/hz 100 969 mhz-1161 mhz (16.5%) 161 μw -93.09 dbc/hz -113.23 dbc/hz 270 857mhz1049 mhz (18.3%) 157 μw -93.50 dbc/hz -113.93dbc/hz 700 585 mhz-771 mhz (24.12%) 152 μw -92.88 dbc/hz -112.34 dbc/hz design of a four stages vco using a novel delay circuit for operation in distributed band frequencies 477 fig. 5 tuning range of vco at different temperatures for vcntr1=0.2v and vcntr2 varies from 0v to 1v (pre layout simulation) fig. 6 tuning range of vco at normal temperature for vcntr1=0.2v and vcntr2 varies from 0v to 1v (pre and post layout simulation at 270) table 4 corner analysis at vcntr1=0.2 v and vcntr2=0.1v process coners pre layout @1mhz post layout @1mhz pre layout @10 mhz post layout @10 mhz output noise (db) phase noise (dbc/hz) output noise (db) phase noise(db c/hz) output noise(db) phase noise (dbc/hz) output noise (db) phase noise (dbc/hz) nn -93.10 -92.07 -93.23 -92.61 -112.26 -111.25 -113.00 -112.16 ff -94.68 -93.32 -95.38 -93.87 -113.45 -112.33 -114.12 -113.11 fs -96.12 -95.54 -96.62 -95.93 -116.10 -114.56 -116.96 -115.22 sf -95.22 -94.56 -95.88 -94.89 -115.31 -113.34 -116.45 -114.31 ss -94.20 -93.40 -94.66 -93.84 -112.87 -111.86 -113.10 -112.53 478 m. gogoi, p. k. dutta 4. implementation the proposed four stages vco design is implemented using cadence cmos 90nm technology. device dimension used in the circuit is mentioned in table 1. analysis of tuning ranges were carried out by varying vcntr2 from 0v to 1v for different values of vcntr1. mainly vcntr1 was divided into two ranges, the lower one 0 to 0.5v and upper 0.5v to 1.0v. optimum values for maximizing tuning range in both cases were found to be 0.2v (lower) and 0.77v (upper). oscillating frequency ranges from 55 mhz to 606 mhz (91% approx.) for lower band with the control voltage vcntr1=0.2v as shown in fig 5 and table 2. whenever path delay is high oscillating frequency is found to be low and vice versa. fig 7 and table 3 shows variation of tuning range due to change in vcntr2 keeping vcntr1=0.77v. vcntr2 varies from 1v to 0v and the tuning range is found to be 857 mhz to 1049 mhz (18.30%) at normal temperature. thus, it can be considered as operation in higher band frequency. so, the benefit of the circuit is that the same circuit can be operated in two different bands of frequency and thereby increasing the tuning range of the circuit. effect of temperature: due to the changes in transconductance gain (gm), threshold voltage (vth), electron and hole mobility (n and p) and parasitic capacitors, transistors have the biggest impact on the frequency drift and they are obtained as follows [33]: 𝑔𝑚 = µ𝑛cox w l (vgs − vth) (20) 𝑉𝑡ℎ = 𝑉𝑡ℎ0 − 𝛼(𝑇 − 270) (21) µ(𝑇) = µ(𝑇 = 270) ( t 270 ) − 3 2 (22) the operation of the circuit is tested by varying the temperatures; it is found that the operating frequency is reduced with increase in frequency. analysis of the circuit is carried out by varying the temperatures from 00c to 700c in both pre layout and post layout at vdd=1v, vcntr1 equals to 0.77 v and 0.2 v respectively and vcntr2 is varied from 0 to 1v. comparative analysis between the pre and post layout simulation with respect to tuning range are shown in fig. 6 and fig. 8, it is found that the changes in frequency tuning range due to the control voltage vcntr2 are close to each other in both the cases. corner analysis of fig. 7 tuning range of vco at different temperatures for vcntr1=0.77 v and vcntr2 vary from 0v to 1v. design of a four stages vco using a novel delay circuit for operation in distributed band frequencies 479 the circuit in terms of output and phase noise are depicted in tables 4 and 5 for all the five processes namely nn, ff, fs, sf and ss and the results found are satisfactory. the delay circuit layout design is 5.87µm x 6.86µm, while the four-stage vco layout design is 24.98µm x 6.86µm, spanning an area of 171.42m2. they are depicted in fig. 9 and fig. 10. fig. 8 tuning range of vco at normal temperature for vcntr1=0.77v and vcntr2 varies from 0v to 1v (pre and post layout simulation at 270) table 5 corner analysis at vcntr1=0.77v and vcntr2=0.1v process coners pre layout @1mhz post layout @1mhz pre layout @10 mhz post layout @10 mhz output noise (db) phase noise (dbc/hz) output noise (db) phase noise (dbc/hz) output noise (db) phase noise (dbc/hz) output noise (db) phase noise (dbc/hz) nn -96.23 -93.50 -97.11 -94.78 -115.31 -113.93 -116.35 -114.42 ff -95.68 -94.33 -96.28 -94.96 -116.20 -114.42 -116.85 -115.36 fs -99.72 -97.23 -100.22 -98.17 -118.51 -117.81 -119.24 -119.42 sf -98.22 -96.48 -98.89 -97.33 -117.54 -116.71 -118.21 -117.36 ss -97.05 -93.60 -97.76 -94.28 -115.86 -114.11 -116.10 -115.06 fig. 9 layout of the proposed delay cell 480 m. gogoi, p. k. dutta fig. 10 layout of the 4 stage vco the layout design shown in fig. 9 and fig. 10 can further be optimized to reduce the area significantly and get results closer to the obtained in the schematic level. one of the main advantages of the proposed circuit is that the same circuit can be used for working in low frequency range as well as high frequency range by varying the control voltages. however, the range of operations in terms of tuning range is comparatively low. additionally, there is lot of transistors in the delay circuit which further raises the count in the oscillator even more. in the realization column of table 6 it is highlighted that the comparative parameters which are oscillation frequency, consumption of power and phase noise values are either measured or simulated. in our case post-layout values are considered. table 6 comparison parameters references technology (nm) supply voltage (v) number of stages (n) oscillation frequency range (ghz) power consumption (mw) phase noise (dbc/hz) fom dbc/hz realizatio n level 11 180 1.8 2 2.5-5.2 (74%) 17 -90.1 @ 1mhz ---measured 16 180 1 2 0.473-7.54 (93.72%) 7.41 -107.1 @ 10mhz -150.44 simulated 31 180 1.8 4 0.455 to 0.505 0.00139 to 0.00145 1.98 (lower band) and 9.7 (upper band) ------simulated 12 180 1 4 0.479-4.09 (88.28%) 10 -93.3 @ 1mhz -154.4 measured 18 90 1 to 3 3 1.379-1.970 (30%) 0.650-2.584 (74.84%) 0.556-2.584 (78.48%) 0.129 to 5685 -89.779 @ 1mhz -154.51 simulated 28 65 1.2 30 0.556 0.72 -101.7 @ 1mhz -158 simulated 15 65 1.8 3 0.470-0.964 (51.24%) 4.1 -116 @1 mhz -169 measured 29 90 1.2 4 9.21 2.092 -137.9 @ 1mhz ---post layout proposed work 90 1 4 0.048 to 0.57 (91.57%) and 0.82 to 1.01 (18.8 %) {distributed band} 0.151 (lower band) and 0.157 (upper band) -152.40 and -160.64 post layout design of a four stages vco using a novel delay circuit for operation in distributed band frequencies 481 5. conclusion a four-stage vco is designed using a novel differential delay circuit. the vco is found to be operated in two distributed band of frequencies namely lower and upper which is one of its main advantages. pre layout simulation result shows operating frequency bands are 55 mhz to 606 mhz (lower) at normal temperature when one of the control voltages vcntr1 is maintained at 0.77v while the other one vcntr2 varied from 0v to 1v. phase noise at 1mhz and 10 mhz offset are found to be 92.07 dbc/hz and -111.25 dbc/hz at lower frequency band. the vco operates in 857 mhz to 1049 mhz (upper) when vcntr1 is 0.2v and vcntr2 varied from 0v to 1v. in this band the phase noise at 1mhz and 10 mhz offset are -93.50 dbc/hz and -113.93 dbc/hz. pre layout power consumption of the vco at 270 is found to be 151µw and 157µw for the operating frequencies of 606 mhz and 1049 mhz respectively. references [1] t. miyazaki, m. hashimoto and h. onodera, "a performance comparison of plls for clock generation using ring oscillator vco and lc oscillator in a digital cmos process", in proceedings of asia and south pacific design automation conference (aspdac), 2004, pp. 545-546. [2] h. ghonoodi, h. miar-naimi and m. gholami, "analysis of frequency and amplitude in cmos differential ring oscillators", integration, vol.52, pp.253-259, january 2016. [3] m. gogoi, and p. k. dutta, "review and analysis of charge-pump phase-locked loop", in proceedings of 1st international conference on electronics systems and intelligent computing (esic), 2020, pp. 565-574. [4] j. johnson, m. ponnambalam and p. v. chandramani, "comparison of tenability and phase noise associated with injection locked three staged single and differential ended vcos in 90nm cmos", in proceedings of 4th international conference on signal processing, communication and networking, 2017, pp. 1-4. [5] w. t. lee, j. shimand and j. jeong, "design of a three-stage ring-type voltage controlled oscillator with a wide tuning range by controlling the current level in an embedded delay cell", microelectronics j., vol. 44, pp. 1328-1335, dec. 2013. [6] s. salem, m. tajabadiand and m. saneei, "the design and analysis of dual control voltages delay cell for low power and wide tuning range ring oscillators in 65nm cmos technology for cdr applications", aeu international journal electronics communication, vol. 82, pp. 406-412, dec. 2017. [7] v. muddi, k. d. shinde and b. k. shivaprasad, "design and implementation of 1ghz current starved voltage control oscillator (vco) for pll using 90nm cmos technology", in proceedings of international conference on control, instrumentation, communication and computational technologies (iccicct), 2015, pp. 335-339. [8] j. g. maneatis and m. a. horowitz, "precise delay generation using coupled oscillators", ieee j. solid-state ciruits., vol. 28, pp. 1273-1282, dec. 1993. [9] s. t. yan and h. c. luong, "a 3-v 1.3-to-1.8-ghz cmos voltage-controlled oscillator with 0.3-ps jitter", ieee trans. circuits syst. ii: analog and digital signal proc., vol.45, pp. 876-880, july 1998. [10] c. h. park and b. kim, "a low-noise, 900-mhz vco in 0.6-/spl mu /m cmos", ieee j. solid-state circuits, vol. 34, pp. 586-591, june 1998. [11] w. h. tu, j. y. yeh, h. c. tsai and c. k. wang, "a 1.8 v 2.5-5.2 ghz cmos dual-input two-stage ring vco", in proceedings of asia pacific conference on advanced system integrated circuits, 2004, pp. 134-137. [12] m. l. sheu, y. s. tiao and l. j. taso, "a 1-v 4-ghz wide tuning range voltage-controlled ring oscillator in 0.18 μm cmos", microelectronics j., vol. 42, pp. 897-902, april 2011. [13] m. parvizi, a. khodabakhshand and a. nabavi, "low-power high-tuning range cmos ring oscillator vcos", in proceedings of the ieee international conference on semiconductor electronics, 2008, pp. 40-44. [14] s. suman, k. g. sharma and p. k. ghosh, "design of pll using improved performance ring vco", in proceedings of the international conference on electrical, electronics and optimization techniques (iceeot), 2016, pp. 3479-3483. 482 m. gogoi, p. k. dutta [15] h. gao, r. xia, x. wang, t. zhou and m. zhou, "wideband ring oscillator with switched resistor array for low tuning sensitivity", analog integr. circuits and signal process., vol. 89, pp. 493-498, sept. 2016. [16] n. gargouri, d. b. issa, z. sakka, a. kachouri and m. samet, "design and optimization of differential ring oscillator for ir-uwb applications in 0.18μm cmos technology", j. circuits syst. comput., vol. 26, pp. 1750080-1-1750080-15, dec. 2016. [17] s. salem, h. zandevakili, a. mahani and m. saneei, "fault-tolerant delay cell for ring oscillator application in 65 nm cmos technology", iet circuits devices syst., vol. 12, pp. 233–241, nov. 2017. [18] m. kumar and d. dwivedi, "a low power cmos-based vco design with i-mos varactor tuning control", j. circuits syst. comput., vol. 27, pp. 1850160-1-1850160-14, jan. 2018. [19] s. y. lee, s. amakawa, n. ishihara and k. masu, "2.4-10 ghz low-noise injection-locked ring voltage controlled oscillator in 90nm complementary metal oxide semiconductor", jpn. j. appl. phys., vol. 50, pp. 04de03-1-04de03-5, april 2011. [20] a. ramazani, s. biabani and g. hadidi, "cmos ring oscillator with combined delay stages", aeu – int. j. electron. commun., vol. 68, pp. 515-519, june 2014. [21] m. karimi-ghartemani, h. karimiand and m. r. iravani, "a magnitude phase-locked loop system based on estimation of frequency and in-phase/quadrature-phase amplitudes", ieee trans. ind. electron., vol. 51, pp. 511-517, april 2004. [22] a. sharma, saurabh and s. biswas, "a low power cmos voltage controlled oscillator in 65nm technology", in proceedings of international conference on computer communication and informatics, 2014, pp. 1-5. [23] s. kamran and n. ghaderi, "a novel high speed cmos pseudo-differential ring vco with wide tuning control voltage range", in proceedings of the iranian conference on electrical engineering (icee), 2017, pp. 201-204. [24] z. chen and t. lee, "the study of a dual-mode ring oscillator", ieee trans. circuits syst. ii: express briefs, vol. 58, no. 4, pp. 210-214, april 2011. [25] g. k. sharma, a. k. johar, t. b. kumar and d. boolchandani, "design and analysis of wide tuning range differential ring oscillator (wtr-dro)", analog integr. circuits signal process., vol. 103, pp. 17-29, april 2020. [26] j. m. kim, s. kim, i. y. lee, s. k. han and s. g. lee, "a low noise four-stage voltage controlled ring oscillator in deep-submicrometer cmos technology", ieee trans. circuits syst. ii: express briefs, vol. 60, no. 2, pp. 71-75, feb. 2013. [27] i. kovacs and m. neag, "new dual-loop topology for ring vcos based on latched delay cells", in proceedings of the ieee international symposium on circuits and systems (iscas), 2018, pp. 1-5. [28] t. yoshio, t. kihara and t. yoshimura, "a 0.55 v back-gate controlled ring vco for adcs in 65 nm sotb cmos", in proceedings of the ieee asia pacific microwave conference (apmc), 2017, pp. 946-948. [29] s. k. saw, s. k. yadav, m. maiti, a. j. mondal and a. majumder, "a design approach of higher oscillation vco made of cs amplifier with varying active load", microsyst. technol., vol. 26, pp. 1-10, feb. 2020. [30] a. a. abidi, "phase noise and jitter in cmos ring oscillators", ieee j. solid-state circuits, vol. 41, no. 8, pp. 1803-1816, aug. 2006. [31] s. pahlava and m. b. ghaznavi-ghoushchi, "1.45 ghz differential dual band ring based digitallycontrolled oscillator with a reconfigurable delay element in 0.18 μm cmos process", analog integr. circuits signal process., vol. 89, no. 2, pp. 461-467, nov. 2016. [32] m. katebi, a. nasri and s. toofan, "a wide tuning range and low phase noise vco using new capacitor bank structure", majlesi j. electr. eng., vol. 12, pp. 95-103, 2018. [33] m. katebi, a. nasri, s. toofan and h. zolfkhani, "a temperature compensation voltage controlled oscillator using a complementary to absolute temperature voltage reference", int. j. eng., vol. 32, no. 5, pp. 710-719, 2019. facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. 61-70 https://doi.org/10.2298/fuee2201061g © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper realization of a variable resolution modified semiflash adc based on bit segmentation scheme pranati ghoshal1, chanchal dey2, sunit kumar sen2 1dept. of applied electronics and instrumentation engineering, techno main salt lake, kolkata, india 2instrumentation engineering, dept. of applied physics, university college of technology,92, apc road, kolkata, india abstract. a modified variable resolution semiflash adc, based on ‘bit segmentation scheme’, is presented. its speed and comparator count are identical to a normal flash adc. an 8-bit adc has 256 different bit combinations. sixteen consecutive bit combinations from the msb side – beginning with the first one, remain unaltered for such an adc. it continues this way till the last group of sixteen bits. in the designed circuit, the four msb and four lsb bits are determined in the first and second part of the clock. following the same logic, the bits in a 16-bit adc can be found out in only two clock cycles by employing only fifteen comparators. it implies that a higher resolution adc can easily be determined with low power and small die area. it is tested in p-sim professional 9 for an 8-bit adc and curves drawn to establish the validity of the proposal. key words: bit segmentation scheme (bss), bit swap logic (bsl), least significant bit (lsb), semiflash adc, half flash adc, modified full flash adc (mffadc) 1.introduction different types of adc architectures are used to meet various application needs like resolution, accuracy and faster operation. a flash or parallel adc is fastest among the various types of adcs available in the market. comparator count for a flash adc increases exponentially with resolution. this limits the use of flash adcs to 8-bit resolution. over the years, researchers have designed various versions of flash adcs like half flash, semi flash, simplified half flash, multi-step flash etc. these different types have their own advantages and disadvantages compared to a flash or full flash adc. a modified 8-bit semiflash adc, using only fifteen comparators, is reported in [1] whose speed is same as that of a full flash adc. since only fifteen comparators are received september 7, 2021; received november 8, 2021 corresponding author: pranati ghoshal dept. of applied electronics and instrumentation engineering, techno main salt lake, kolkata 700091 (india) e-mail: pranati991@gmail.com * an earlier version of this paper was presented at the 4th international conference on 2021 devices for integrated circuit (devic 2021), may 19-20, 2021, in kalyani, west bengal, india [1]. 62 p. ghoshal, c. dey, s. k. sen required, its power and die area requirement are thus significantly reduced. in [2], [3] hybrid flash-hybrid adc architectures were used. in the former, a sampling switch was used to get reduced settling time for dac and parallel capacitors used to reduce high frequency noise jitters while in the case of the latter, a segmented split capacitor charge redistribution dac was employed to achieve less area and power and higher speed. a twostep 8-bit flash adc and an 8-bit semiflash adc, both of which used 15 comparators and a charge redistribution technique, were reported in [4], [5]. a bit swap logic (bsl) based bubble error correction (bec) technique was applied in [6], while in [7] flash adc performance was evaluated in presence of offset using hot code generator and bit swap logic (bsl).in [8], an encoder with reduced power was used for threshold inverter quantization based flash adc. a statistically-driven two-step flash sub-adc was constructed [9] having applications in high-speed time-interleaved adcs in wire line communications. in [10], 8-bit and 10-bit adcs were designed using fewer number of comparators and resistors which resulted in less area and power consumption. in [11], [12] a low power 4-bit flash adc and a 9-bit two step flash adc were respectively realized using standard cells. in [13], a flash adc was used which increased the input dynamic range of adc by using 5-input logic gates. a simplified half flash adc, having the same speed as that of a flash adc was designed in [14], but with reduced comparator count and less die area. a two-step flash adc was reported in [15] which can be used in communication fields. ota based comparators were used to realize a 3-bit high speed flash adc [16] having applications in wireless lan. active data and clock distribution trees [17] were used to realize a 4-bit flash adc. bubble errors were taken care of in [18] by using a low power wallace tree encoder for flash adcs. a low power fault resistant flash adc which finds applications in instrumentation fields was reported in [19]. a 6-bit low power flash adc was reported in [20] which used an online offset cancellation technique. 2. previous architectures relationship between resolution and number of comparators for a flash adc [10], [14] is given by 𝑁𝑐(𝑁) = 2𝑁 − 1 (1) from (1), it is evident that number of comparators increases exponentially [10] with increase in resolution. a two-step or half flash [4,9] adc accomplishes the bits in two clock cycles. for a half flash adc, comparator count and resolution carries the following relationship. 𝑁𝑐(𝑁) = 2.2𝑁/2 − 2 (2) a semiflash adc [5] is very simple in nature which consumes less power and die area. an 8-bit semiflash adc uses only 15 comparators for both fine and coarse conversions leading to a drastic reduction in the number of comparators used. number of comparators for a semiflash adc follows the relationship [5] 𝑁𝑐(𝑁) = 2𝑁/2 − 1 (3) a simplified half flash adc [14] employs a voltage estimator (ve) and a modified full flash adc (mffadc). its requirement of power and die area are very small and has a realization of a variable resolution modified semiflash adc based on bit segmentation scheme 63 speed almost thrice that of a normal half flash adc. requirement of the number of comparators for a simplified half flash adc bears the following relationship [14] 𝑁𝑐(𝑁) = 2(𝑁/2−2) + 2 (4) speed of a multistep 10-bit adc [10] is identical to a conventional half flash adc. its die area and power needs are low due to small number of comparators required. number of comparators needed in case of [10] bears the relationship. 𝑁𝑐(𝑁) = 2( 𝑁 2 −1) (5) 3. the bit segmentation scheme (bss) a normal flash or full flash adc, as it is called, has an exponential relationship between the number of comparators used and the resolution. thus, with increasing resolution, number of comparators needed for such an adc becomes unmanageable. for instance, for a 16-bit flash adc, number of comparators needed is 2^16 1 = 65535. in the present case, a modified 8-bit semiflash adc is presented which is based on bss. the designed modified 8-bit semiflash adc determines the 8 bits in a single clock. it implies that its speed is same as that of a normal flash adc. a look at the bit combinations of an 8-bit flash adc shows that it has 256 bit combinations. the combinations are segregated into sixteen fields as shown in fig .1. it is observed from the figure that the four msb bits in each field are same. as an example, in field 2 of the figure, the four msb bits 0001 remain unchanged. the designed circuit identifies this 4 msb bits in the first half of the clock cycle, i.e., during this time the particular field in which the unknown analog signal belongs, is identified. the rest four bits (lsb bits) in the field is determined in the second half of the clock cycle. thus, for the designed circuit, all the 8-bits are determined in a single clock – implying that its speed is identical to a normal flash adc. also, it will be seen only fifteen comparators would be required to evaluate the 8-bits. by the same logic, a 16-bit adc of identical architecture would require only two clock cycles, but number of comparators needed for evaluation of the 16 bits would still remain at 15. thus, savings in the number of comparators would be 65535/15 = 4369 times compared to a normal flash adc. thus, both power and die area would be drastically reduced. fig. 1 the sixteen fields for an 8-bit adc 64 p. ghoshal, c. dey, s. k. sen 4. realizingthe modified 8-bitsemiflash adc based onbss fig. 2a) below shows the details of the designed modified 8-bit semiflash adc while fig. 2b) shows its timing diagram. the explanation of the designed circuit is given below. the bottom left part of fig. 2a) shows the manner of generation of pulses c1, c2 and c11. c1, c2 remain active during first and second half of the clock, while c11 is a delayed version of c1. vr and vin are respectively the reference voltage and unknown analog input voltage applied during the first half of the clock, while during the second half of the clock, they are replaced by ‘new vr’ and ‘new vin’. also, during the second half of the clock, the bottom of the ladder is fed with a voltage available at point ‘p’ shown in fig. 2a). this voltage represents the voltage value of the four msb bits corresponding to the particular field detected during first half of the clock. (a) (b) fig. 2 a) realization of a modified 8-bit semiflash adc b) timing diagram for realization of different pulses realization of a variable resolution modified semiflash adc based on bit segmentation scheme 65 during the first half of the clock, pulse c1 makes sure that the switches sw1, sw3 and sw5 remain in the closed condition. the positive inputs of the fifteen comparators are all connected to vin while their negative inputs are connected to voltages from the ladder as shown in the figure. the fifteen outputs o15-o1 from the comparators along with o0 (which is always 1) are fed to a 16-to-4 priority encoder. its four outputs are connected to two sets of and gates. a set of four and gates are controlled by c1 while the other set by c2. during the first half of the clock, since c1 is active, thus encoder outputs are latched by latch1. these four bits are stored in the 1-byte register as d7-d4 bits. they are also anded with c’1 pulse. outputs of anding operation act as control inputs to switches sw7-sw10. the inputs to sw7-sw10 are respectively connected to d7-d4 bits, represented by va, vb, vc and vd as shown in the figure. the outputs of switches act as inputs to the summer s1(1). output of summer s1(1) is a representation of the sum of weights of the four bits from the msb side of the input analog signal. for example, if during c1, the output from the priority encoder is 1011, the output of summer s1(1) will represent a value equal to 1011. summer s1(2) sums the output of s1(1) with 0000 1111. thus, summer s1(2) output will correspond to the highest value within the field to which the analog signal belongs. this acts as the ‘new vr’, which would become effective from the beginning of c2. s2 is a subtractor that subtracts s1(1) from the original vin. the subtracted result acts as the ‘new vin’ value. at the beginning of c2, switches sw2, sw4 and sw6 become active. thus, during this time, ‘new vr’ and ‘new vin’ come into the circuit by replacing vr and vin respectively. the top of the ladder is fed with a voltage which represents the highest value of the analog signal fig. 3 simulation of the circuit shown in fig. 2a by psim p9 66 p. ghoshal, c. dey, s. k. sen corresponding to the field in which the unknown analog signal belongs, while the lower end of the ladder is supplied with a voltage that corresponds to the analog voltage of the four msb bits to which the unknown signal belongs. the circuit behaves in an identical manner as during c1 with priority encoder outputting a new set of four bits. these four bits are latched by latch 2, since it is active during c2. the outputs of latch 2 are now stored in d3-d0 bits of the 1-byte register. the circuit is then reset so that it can accept the next new analog signal. psim professional 9 is used to simulate the circuit of fig. 2a). 5. experimental results table 1-5 shows the input voltages and their corresponding outputs for reference voltages starting from 5v to 1v, with a gap of 1v between any two successive reference voltages. an interval of 0.25v is maintained between any two successive readings for any table. each output voltage shown in any table corresponds to the average output voltage obtained for both increasing and decreasing input voltages. error curves have been drawn for all reference voltage levels. table 1 i/p vs. o/p for ref. voltage= 5v sr. no. i/ps (v) bit pattern o/ps (v) % error 1 0.0 0000 0000 0.0 0.0 2 0.25 0000 1101 0.2549 1.96 3 0.5 0001 1001 0.4901 1.98 4 0.75 0010 0110 0.7451 0.65 5 1.0 0011 0100 1.0196 -1.96 6 1.25 0011 1111 1.2353 1.18 7 1.5 0100 1101 1.5097 -0.65 8 1.75 0101 1011 1.7647 -0.84 9 2.0 0110 0110 1.9804 0.98 10 2.25 0111 0011 2.2549 -0.22 11 2.5 0111 1111 2.4902 0.39 12 2.75 1000 1111 2.7647 -0.53 13 3.0 1001 1101 3.0784 -2.6 14 3.25 1010 1011 3.2745 -0.75 15 3.5 1011 0001 3.4706 0.84 16 3.75 1011 1110 3.7255 0.65 17 4.0 1100 1111 3.9804 0.49 18 4.25 1101 1010 4.2745 -0.58 19 4.5 1110 0111 4.5294 -0.65 20 4.75 1111 0110 4.7451 0.10 21 5.0 1111 1111 5.0 0.0 realization of a variable resolution modified semiflash adc based on bit segmentation scheme 67 table 2 i/p vs. o/p for ref. voltage= 4v sr. no. i/ps(v) bit pattern o/ps (v) % error 1 0.0 0000 0000 0.0 0.0 2 0.25 0000 1111 0.2510 -0.4 3 0.5 0010 0001 0.5020 -0.4 4 0.75 0011 0001 0.7529 -0.39 5 1.0 0100 0001 1.0196 -1.96 6 1.25 0101 0010 1.2549 -0.39 7 1.5 0110 0000 1.506 -0.4 8 1.75 0111 0000 1.7569 -0.39 9 2.0 0111 1111 1.9922 0.39 10 2.25 1000 1111 2.2431 0.31 11 2.5 1001 1111 2.4941 0.24 12 2.75 1010 1111 2.7451 0.18 13 3.0 1011 1111 2.9961 0.13 14 3.25 1100 1111 3.2471 0.09 15 3.5 1101 1111 3.4980 0.06 16 3.75 1110 1111 3.7490 0.03 17 4 1111 1111 4.0 0.0 table 3 i/p vs. o/p for ref. voltage= 3v sr. no. i/ps(v) bit pattern o/ps(v) %error 1 0.0 0000 0000 0.0 0.0 2 0.25 0001 0011 0.2471 1.16 3 0.5 0010 1011 0.5059 -1.18 4 0.75 0011 1111 0.7412 1.18 5 1.0 0101 0110 1.0118 -1.18 6 1.25 0110 1011 1.2588 -0.70 7 1.5 0111 1111 1.4941 0.39 8 1.75 1001 0111 1.7765 -1.5 9 2.0 1010 1011 2.0118 -0.59 10 2.25 1011 1111 2.2471 0.13 11 2.5 1101 0111 2.5294 -1.18 12 2.75 1110 1111 2.7647 -0.53 13 3.0 1111 1111 3.0 0.0 table 4 i/p vs. o/p for ref. voltage= 2v sr. no. i/ps(v) bit pattern o/p(v) % error 1 0.0 0000 0000 0.0 0.0 2 0.25 0001 1111 0.2432 2.72 3 0.5 0011 1111 0.4941 1.18 4 0.75 0101 1111 0.7451 0.65 5 1.0 0111 1111 0.9961 0.39 6 1.25 1001 1111 1.2471 0.23 7 1.5 1011 1111 1.4980 0.13 8 1.75 1101 1111 1.7490 0.06 9 2.0 1111 1111 2.0 0.0 68 p. ghoshal, c. dey, s. k. sen table 5 i/p vs. o/p for ref. voltage= 1v sr. no. i/ps(v) bit pattern o/ps(v) % error 1 0.0 0000 0000 0.0 0.0 2 0.25 0011 1111 0.245 2.0 3 0.5 0111 1111 0.495 1.0 4 0.75 1011 1101 0.74 1.33 5 1.0 1111 1111 1.0 0.0 6. error curves fig. 4 shows five error curves for reference voltages starting from 5v to 1v. it is observed that for any curve, error percentage is more for low value of the input analog signal which is only to be expected. series 1 corresponds to reference voltage 5v while series 5 corresponds to 1v respectively. fig. 4 error curves for different input reference voltages 7. comparison between different architectures number of comparators and clock cycles needed by different architectures, including the proposed one, is shown in fig. 5a) for 8 and 16-bit resolutions, while the plot of comparator count versus resolution is depicted in fig. 5b). the architectures of interest discussed in both the figures are flash or full flash, half flash, semi flash, simplified half flash, multi-step and the proposed one. for 8-bit resolution, number of comparators in the proposed scheme is slightly more than simplified half flash and multi-step types. but for 16-bit resolution, the proposed scheme requires fewer number of comparators compared to other architectures. from the point of view of the number of clock cycles required for 8bit adc, the proposed architecture requires same number of clock cycles as that of a flash adc, but better than the other architectures. for 16-bit adc, the proposed scheme is either realization of a variable resolution modified semiflash adc based on bit segmentation scheme 69 better (simplified half flash) or same as that of the other architectures, barring the full flash adc which requires only one clock cycle. fig. 5 a) number of comparators and clock cycles needed for different architectures b) a plot of comparator count vs. adc resolution for different architectures 8. conclusion a variable resolution modified semi flash adc design is presented in this paper. it achieved variable resolution by merely changing the required number of clock cycles. design of a modified 8-bit semi flash adc, based on bss, is presented in hardware and simulated in psim p9. the idea of the presented technique is in a way based on flash adc design. higher order adcs can be realized based on the presented technique. as an example, a 16-bit adc can be designed and realized in only two clock cycles requiring only fifteen comparators. extending the concept, a 24-bit adc would require three clock cycles only. thus, high resolution adcs with very high speeds can be designed. since the designed circuit requires drastically reduced number of comparators, hence it would require very low power and die area. the proposed design thus completely eliminates the need for an exponential increase in the number of comparators with increasing resolution, as it is the case with a flash adc. in the designed circuit, both the reference voltage to the ladder as also the input signal have been changed in the latter half of the clock cycle. it is different from pipeline or two step adcs where only one or two bits are analyzed in a single clock cycle, while the presented method is based on bss. in bss, the whole bit pattern is divided into fields, which has been explained in text. references [1] p. ghoshal, c. dey and s. k. sen, "design of a combinational modified 8-bit semiflash analog to digital converter", in proceedings of the 4th international conference on devices for integrated circuits (devic), 2021, kalyani, india, pp. 1–5. [2] a. razzaq and s. m. chaudhry, "a 15-bit 85 ms/s hybrid flash-sar adc in 90-nm cmos", circuits, syst. signal process., vol. 37, pp. 1452–1478, aug. 2017. [3] b. d. kumar, s. k. pandey, n. gupta and h. shrimali, "design of hybrid flash-sar adc using an inverter based comparator in 28 nm cmos", microelectron. j., vol. 95, p. 104666, jan. 2020. https://link.springer.com/article/10.1007/s00034-017-0629-z 70 p. ghoshal, c. dey, s. k. sen [4] a. cremonesi, f. maloberti, g. torelli and c. vacchi, "an 8-bittwo step flash a/d converter for video application", in proceedings of the ieee custom integrated circuits conference (cicc), pp. 6.3/1–6.3/4, 1989. [5] d. p. dimitrov and t. k. vasileva, "eight-bit semi flash a/d converter", hindawi publishing corporation, vlsi design, vol. 2007, pp. 1–7, 2007. [6] p. ghoshal and s. k. sen, "a bit swap logic (bsl) based bubble error correction (bec) method for flash adcs", in proceedings of the international conference on control, instrumentation, energy and communication, ciec, 2016, pp. 111–115. [7] p. ghoshal and s. k. sen, "performance evaluation of flash adcs in presence of offsets using hot code generator and bit swap logic (bsl)", in proceedings of the international conference on industry interactive innovations in science, engineering and technology, i3set-2016, springer-lnns, published in industry interactive innovations in science, engineering and technology, 2016, pp. 435–445. [8] m. gurjar and s. akashe, "design low power encoder for threshold inverter quantization based flash adc converter", int. j. vlsi des. commun. syst., vol. 4, no. 2, pp. 83–90, apr. 2013. [9] d. liu, l. he, f. lin, t. li and y.-k. chou, "a time interleaved statistically-driven two step flash adc for high-speed wire line applications", j. circ. syst. comput., vol. 26, no. 7, p. 1750118, july 2017. [10] m. k. mayes and s. w. chin, "a multi step a/d converter family with efficient architecture", ieee j. solid state circ., vol. 24, no. 6, pp. 1492–1497, dec. 1989. [11] m. s. njinowa, h. t. bui and f-r. boyer, "design of low power 4-bit flash adc based on standard cells", in proceedings of ieee 11th international new circuits and systems conference, (newcas), 2013, pp. 1–4. [12] e. rahul, e, r. k. siddharth, v. sharma, m. h. vasantha and y. b. nitin kumar, "two-step flash adc using standard cell based flash adcs", in proceedings of the ieee international symposium on smart electronic systems, 2019, pp. 292–295. [13] r. k. siddharth, k. y. b. nithin and m. h vasantha, "design of low power 5-bit hybrid flash adc", in proceedings of the ieee computer society annual symposium on vlsi (isvlsi), 2016, pp. 585–588. [14] p. b. y. tan, a. v. kordesch and o. sidek, "simplified half flash cmos analog to digital converter", in proceedings of the nsti-nanotech 2004, pp. 191–194. [15] d. liu, l. he, f. lin, t. li and y-k. chou, "a time interleaved statistically driven two step flash adc for high speed wireless applications", j. circ. syst. comput., vol. 26, no. 7, p. 1750118, july 2017. [16] m. n. a. bajg and r. ranjan, "design and implementation of 3-bit high speed flash adc for wireless lan applications", int. j. adv. res. comput. commun. eng., vol. 6, no. 3, pp. 428–433, march 2017. [17] s. shahramian, s. p. voinigescu and a. c. carusone, "a 35-gs/s, 4-bit flash adc with active data and clock distribution trees", ieee j. solid-state circ., vol. 44, no. 6, pp. 1709–1720, june 2009. [18] m. p. ajanya and g. t. varghese, "low power wallace tree encoder for flash adc", iop conference series: materials science and engineering, vol. 396, 2018, p. 012042. [19] g. prativa and m. santhi, "design of low power fault tolerant flash adc for instrumentation applications", microelectron. j., vol. 98, p. 104739, apr. 2020. [20] a. amini, a. baradararanrezaeii and m. hassanzadazar, "a novel online offset cancellation mechanism in a low power 6-bit 2gs/s flash adc", analog integr. circuits signal process., vol. 99, no. 2, pp. 219–229, may 2019. https://ieeexplore.ieee.org/xpl/mostrecentissue.jsp?punumber=7558446 facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. 89-104 https://doi.org/10.2298/fuee2101089p © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper gpu-supported simulation for abep and qos analysis of a combined macro diversity system in a gamma-shadowed k-µ fading channel nenad petrović1, selena vasić2, dejan milić1, suad suljović1, samir koničanin1 1faculty of electronic engineering, university of niš, serbia 2faculty of information technologies, metropolitan university, belgrade, serbia abstract. in this paper we have analyzed macro-diversity (md) system with one macro sc diversity (md sc) receiver and two micro mrc (md mrc) receivers over correlated gamma-shadowed k-µ fading channel. the average bit error probability (abep) is calculated using the moment generating function (mgf) approach for bdpsk and bpsk modulations. graphical representation of the results illustrates the effects of different parameters of the system on its performance as well as the improvements due to the benefits of a combined micro and macro diversity. the obtained analytical expressions are used for the gpu-enabled mobile network modeling, planning and simulation environment to determine the value of quality of service (qos) parameter. finally, linear optimization is proposed as an approach to improve the qos parameter of the fading-affected system observed in this paper. key words: gamma shadowing, k-µ fading, mgf, abep, gpgpu, sdr 1. introduction in cellular communications, due to specific nature of transmission channels, signal power level at the receiver is affected by macroscopic and microscopic degrading effects [1]. macroscopic effects are usually shadowed fading effects from buildings, foliage, and other objects. microscopic fading is a result of multipath characteristics. in urban areas, there is no direct line-of-sight (los) along the transmission line. the channel characteristics between transmitter and receiver will change instantaneously as the mobile user moves in the environment with not-stationary surrounding objects that additionally affect the transmission. therefore, a multipath fading, a shadowed fading, or a mixture of these two can characterize received july 22, 2020; received in revised form november 4, 2020 corresponding author: nenad petrović faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia e-mail: nenad.petrovic@elfak.ni.ac.rs 90 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović the transmission channel [2]. in overcrowded downtown environments where foliage and urban shadowing is found, both multipath and shadowed fading need to be considered while analyzing system performances. long-scale fading is manifested in variations of the signal average strength at the receiver. small-scale fading emerges in the form of rapid fluctuations of the amplitude and phase of a signal. in a homogeneous channel short-term fading is successfully described by rayleigh, nakagami-m, rice or hoyt distributions. in a real system, the surfaces are spatially correlated, so the channel is non-homogeneous [3]. distributions that model non-homogeneous fading channels are generalized n-distribution and generalized q-distribution. they are valid in both cases-when los (line-of-sight) component is present or absent and are more appropriate in modeling practical fading channels. parameterized distributions such as κ-μ and η-μ distributions are used to model this type of non-homogeneous channels which show functional similarities with generalized-n and generalized-q distributions, respectively. the η-μ distribution is used to model the non-homogeneous small-scale fading in the absence of los component [4]. distribution κ-μ is generalized distribution used to model small-scale fading in line-of-sight (los) non-homogeneous fading channel. for μ=1, κ-μ distribution becomes rice distribution, for κ→0 nakagami-m distribution, for μ=1, κ→0 rayleigh distribution, and for μ=0.5, κ→0 one-sided gaussian distribution [5]. applying diversity techniques eliminates negative effects of fading [6]. diversity combining improves receiver performance by processing numerically statistically independent copies of the same signal carrying information across multiple fading channels and by efficiently combining the two or more signals. the idea behind this concept is that it is highly unlikely that deep fading will simultaneously occur in all the diversity channels, thus reducing error probability. the minimum antenna spacing for a mobile unit is at least half a wavelength [7]. macro-diversity (md) reception reduces both long-term and short-term fading effects on performance of cellular mobile radio systems [8]. md reduces the shadowing effect, and micro-diversity (md) systems decrease rapid fading. mrc and egc combining techniques, followed by sc and ssc techniques reduce the impact of fading and increase channel capacity [9]. mrc and egc combiners are complex to implement in practice; hence, the use of sc combining, especially in cases with minimal correlation between channels, has proved as more efficient. the sc receiver choses the branch with the highest signal-to-noise ratio (snr). for mrc harvesters, if the noise power is equal at all inputs the square of the output signal is equal to the sum of the squares of the input signals [10]. in this paper, a combined md system with md sc receiver and two md mrc receivers in a gamma-shadowed k-µ multipath fading channel is analyzed. using the calculated expression for the moment-generating function (mgf) of the signals at the output of the md mrc receivers, mgf of the signal at the output of md sc receiver is determined. in the following, the obtained expression for mgf can be used to evaluate the first-order statistics such as outage probability (op) and bit error probability (bep) of the observed md system. the average bit error probability (abep) for non-coherent binary differential phase-shift keying (bdpsk) and non-coherent binary phase-shift keying (bpsk) is studied using the mgf-based approach. to the best authors’ knowledge deriving abep using mgf method for the combined md system with md sc receiver and two md mrc receivers in a gamma large-scale fading and κ-μ small-scale fading in a simulated gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel 91 environment is not analyzed in open technical literature. numerical results are obtained using software mathematica and origin and they illustrate the proposed analytical expressions and impact of the parameters of the system on the statistical characteristics observed. moreover, the derived expressions were integrated in gpu-enabled mobile network modeling, planning and simulation environment. the paper is organized in the following way: in section ii, system abep is calculated for bfsk and bdpsk modulations schemes of the observed system using mgf approach. in section iii, numerical results and the corresponding analysis of the system performance are presented. gpu-enabled modelling, simulation and network planning environment for the system undergoing conditions described in this paper are given in section iv. the conclusion is presented in section v. 2. average bit error probability over moment generating function in this section macro diversity system (md) with md sc receiver and two md mrc receivers in a channel affected by gamma long-term and k-µ short-term fading is investigated. the block-diagram of a macro-diversity model under consideration is shown in fig. 1. the envelopes of the useful signals at the inputs of the first and the second lbranch md are denoted by: r11,…,r1l, where r21,…,r2l are the second md inputs, and x1 and x2, as the outputs of mds. the envelope of the useful signal at the output of md sc receiver is denoted by r. fig. 1 block-diagram of the combined md system in mobile radio channels with los (line-of-sight) components the envelopes of the useful signals rij, affected by a small-scale fading, follow the κ-μ distribution [11]: 2 1 ( 1) 2 11 k 2 2 1 ( 1) ( ) e 2 e i ij i ij k r ij i i i r ij ij i i i r k k k p r i r k       + + −  −−   + + =          (1) 92 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović in the above expression i0 (x) denotes modified bessel function of the first kind and of zeroth order, 2 iji x= are the powers of the useful signals, xij  0. parameter μ describes the number of multipath clusters. the smaller values of μ cause the increase in fading severity. the parameter k describes the ratio of the power of a dominant component and the power of the scattered components. in the considered environment with a dominant los component, after the transformation xij=rij 2, xij≥0; i=1,2, j=1,2..l., the pdf of k-µ random variable xi can be written as [12]: 1 1 ( 1) 2 2 1 1 ( 1) ( ) e 2 e i i i i i i i ii i l l k x i i i i i i x i i l il k i i i l k x k k x p x i l l k l       + − + −  −     + +  =              (2) using well-known transformation [13; 17.7.1.1] the modified bessel function of the first kind can be written as: 2 2 0 ( ) . 2 ! ( 1) v k v v k k x i x k v k  + + = =  + +  (3) where (m) is the gamma function. using the expression (3) we can obtain the pdf of the snr at the output of the md mrc combiner: ( 1) 2 1 0 ( ) 1 ( ) e ! ( ) i i i i i i i i k i li i l i lx l k i i i x i i i ii lk x k p x i i l      + + + + −− −  =  +  =    +    (4) parameter μ can take only integer values as it represents the argument in the gamma function. moreover, the moment-generating function (mgf) of a random variable xij > 0 is given by [14]: 2 00 ( ) 11 ( ) d e ( ) ! ( 1)e i ii i i i i i i i li li x s x s i i x ij x i l k i i ii lk k m s e y p x i k s     +  + − =  + = = =   + +    (5) in the observed system, there are i=2 branches of md sc receiver, and powers of the corresponding useful signals are represented by the random variables ω1 and ω2. in gamma-shadowed channels, these random variables follow the correlated gamma distribution [15], [16]: 1 2 0 1 2 1( )/( (1 )) 1 2 1 2 2 2 2 00 ( )e ( , ) ( ) ! ( ) (1 ) i i c i c i c i p c i i c     + −−  +  −   + + =     =    +  −  (6) in the last expression, c is the order of the gamma distribution, ω0 denotes the average value of the signal powers ω1 and ω2 ( 0 1 2 = = ) and ρ is the correlation coefficient. md sc receiver selects the signal from the micro diversity mrc receiver that has the largest average power of the signal envelope. hence, the moment generating function of the signal at the output of the macro diversity sc receiver will be given by [17], [18]: gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel 93 1 1 11 2 2 1 2 0 0 ( ) d d ( ) ( )x xm s m s p   =     +  2 2 12 1 2 1 2 0 0 d d ( ) ( )xm s p   +     =  1 1 11 2 2 1 2 0 0 2 d d ( ) ( ).xm s p   =      (7) by substituting expressions (5) and (6) in the expression (7), we obtain the mgf at the output of the md sc receiver: 2 21 2 1 1 1 2 2 2 2 2 1 2 1 00 0 ( ) ( 1)2 ( ) ! ! ( ) (1 )( )e i i i i i l i li i i i i x l k i c i c i i lk k m s i i i cc         + + + + = = + =   +  −  1 1 01 2 0 1 2 / (1 )1 / (1 ) 11 1 2 2 0 0 e d d e ( ( 1) ) i i c i c i l i i ik s     −  −+ − −  − + − +      + +   (8) the integral i1 in the above expression is equal: 1 2 01 1/( (1 ))1 1 1 2 2 0 1 00 d e ( (1 )) , . (1 ) i c i c i i c      −  −+ − +   =   =  − +   −   (9) here, γ(α, x) is lower incomplete gamma function [19; 6.5.2], that can be developed by using the following form of the series [20]: 0 1 ( , ) e . (1 ) j a x jj x x x a     − = = +  (10) where (a)n denotes the pochhammer symbol. using (10), we can evaluate the integral i1 as follows: 1 31 0 3 33 /( (1 )) 1 1 1 1 00 e ( 1) ( (1 )) i i c i ii i i c i c    + +−  − =  = + + +  −  (11) after substituting back, the expression (11) into the expression (8) for the mgf at the output of the md sc receiver, we can rewrite the expression for the mgf as: 1 2 31 2 3 1 2 1 1 10 0 0 ( )2 ( ) ! ! ( )( )( 1)( )e i i i i i i x l k ii i i l k m s i i i c i c i cc       = = = =   + + + +  1 3 1 0 1 3 1 3 2 2 2 1 2 / (1 ) 1 12 2 2 0 0 e1 d (1 ) (1 / ( ( 1)) ) i i i c i i c i i c i l i i is k     + + − −   − + + + + +     − + +  (12) 94 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović using the following identity [21; 3.383]: 1 0 e d ( ) , 1 , (1 ) q px q v x p x a q q q v aax  − − −   =   + −  +   (13) where ψ (s, d, t) denotes the confluent hyper-geometric function, the last part of the expression (12) labeled as integral i2, can take the form: 1 31 3 1 0 2 2 22 2 1 2 / (1 ) 1 2 1 0 ( 1)e d (1 / ( ( 1)) ) i i i ci i c i i i l i i i k i ss k      + ++ + − −   − + +   =  =   + +    1 3 1 3 1 3 2 0 2 ( 1) (2 2 ) 2 2 ,2 2 1 , (1 ) i i i k i i c i i c i i c i l s     +  + +  + + + + + − −   −  (14) substituting back the expression for the integral i2 into expression (12), we obtain the mgf at the output of the md sc receiver: 1 2 31 2 1 3 1 2 3 2 2 2 2 1 2 1 00 0 0 ( )2 ( ) ( )e ! ! ( )i i i i i ci i i i x l k i i c i i i lk m s c i i i c       + + + + + = = = =    +   1 3 1 3 3 2 2 1 3 2 1 1 (2 2 ) 1 (1 ) ( )( 1) i i c i i i c i i i c k si c i c + + + +  + + +     − + + +   1 3 1 3 2 0 2 ( 1) 2 2 ,2 2 1 , (1 ) i i i k i i c i i c i l s     +  + + + + + − −   −  (15) one of the performance measures of the wireless communication system is the average symbol error probability (asep). if there are two bits per symbol, this property is equivalent to the average bit error probability (abep) [8]. in the following, using the obtained expression for mgf, the abep of non-coherent bfsk and bdpsk modulation signals can be directly calculated as [6]: bdpsk.for (1),0.5m=)(p bfsk;for (0.5),0.5m=)(p x0be x0be   (16) graphical representation of the abep for the range of different values of parameters from expression (16) for bfsk and bdpsk modulation is given in figures 2, 3, 4 and 5. 3. numerical and graphical results figures 2 and 3 show the abep of the md sc receiver output in terms of the parameter ω0 (the average value of the signal powers ω1 and ω2) for several different values of fadingseverity parameters, correlation coefficient ρ and different number of branches (l) on the input of md mrc receivers for bfsk modulation. gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel 95 0 5 10 15 20 1e-3 0,01 0,1 1 =1, =0.2, l=2 a b e p [     [db] c=1, k=1 c=1.5, k=1 c=2, k=1 c=2.5, k=1 c=3, k=1 c=1, k=1.5 c=1, k=2 c=1, k=2.5 c=1, k=3 fig. 2 abep in terms of ω0 for bfsk modulation and different values of c and k 0 5 10 15 20 1e-3 0,01 0,1 1 c=1, k=1 a b e p [     [db] =1, =0.2, l=2 =1.5, =0.2, l=2 =2, =0.2, l=2 =2.5, =0.2, l=2 =3, =0.2, l=2 =1, =0.4, l=2 =1, =0.6, l=2 =1, =0.8, l=2 =1, =0.2, l=3 =1, =0.2, l=4 fig. 3 abep in terms of ω0 for bfsk modulation and different values of µ, ρ and l 96 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović 0 5 10 15 20 1e-3 0,01 0,1 1 =1, =0.2, l=2 a b e p [     [db] c=1, k=1 c=1.5, k=1 c=2, k=1 c=25, k=1 c=3, k=1 c=1, k=1.5 c=1, k=2 c=1, k=2.5 c=1, k=3 fig. 4 abep in terms of ω0 for bdpsk modulation and different values of c and k 0 5 10 15 20 1e-3 0,01 0,1 1 c=1, k=1 a b e p [     [db] =1, =0.2, l=2 =1.5, =0.2, l=2 =2, =0.2, l=2 =2.5, =0.2, l=2 =3, =0.2, l=2 =1, =0.4, l=2 =1, =0.6, l=2 =1, =0.8, l=2 =1, =0.2, l=3 =1, =0.2, l=4 fig. 5 abep in terms of ω0 for bdpsk modulation and different values of µ, ρ and l the figures 2, 3, 4, 5 for both bfsk and bdpsk modulations show that, as parameters µ, c, k and l are increasing abep function is decreasing and the system has better performance and stability. the increase in correlation coefficient ρ influences the increase in abep and the system becomes unstable. it can be observed that the higher values of ω0 lead to a lower error and better performance. abep is significantly reduced with increasing l-input in micro mrc, and the system performance will improve. on the other hand, larger abep results in a degradation of system performance. comparing the graphics results we can conclude that the better stability of the system and a smaller abep are achieved for the bdpsk than bfsk modulation. gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel 97 to further analyze the abep performances, error related to truncation of infinite series will be considered. tables 1 and 2 illustrate the number of terms in the series that need to be added in order to assure the accuracy of the expression (16) to 5 decimal places, for the given values of bfsk parameters, as given in figures 2 and 3. table 1 number of terms needed in the infinite series expansion in the expression (16) for the abep for the bfsk with accuracy to 5 decimal places: µ=1, l=2, ρ=0.2, while changing parameters c and k (fig.2). ω0=0 db ω0=5 db ω0=10 db c=1, k=1 11 10 7 c=1.5, k=1 12 9 7 c=2, k=1 13 11 7 c=2.5, k=1 13 10 7 c=3, k=1 14 11 8 c=1, k=1.5 13 11 9 c=1, k=2 13 12 11 c=1, k= 2.5 15 14 12 c =1, k=3 18 15 13 for three different values of ω0 [db] and different values of parameters c and k, more terms are needed in the expansion and convergence will occur at a slower pace. table 2 number of terms needed in the infinite series expansion in the expression (16) for the abep for the bfsk with accuracy to 5 decimal places, where c=k=1 and parameters µ, ρ and l are varied (fig.3). ω0=0 db ω0=5 db ω0=10 db µ=1, ρ=0.2, l=2 11 10 7 µ=1.5, ρ=0.2, l=2 12 11 10 µ=2, ρ=0.2, l=2 14 13 10 µ=2.5, ρ=0.2, l=2 15 14 13 µ=3, ρ=0.2, l=2 18 15 13 µ=1, ρ=0.4, l=2 13 10 8 µ=1, ρ=0.6, l=2 15 13 10 µ=1, ρ=0.8, l=2 11 20 16 µ=1, ρ=0.2, l=3 11 10 8 µ=1, ρ=0.2, l=4 13 11 10 as the values of the parameters µ, ρ and l increase, the number of terms in the expression needed for the accuracy to 5 decimal places increases too, and convergence is obtained at a slower pace. in tables 3 and 4 the results for the similar analysis are presented for the bdpsk modulation scheme. the number of terms in the series expansion in the expression (16) needed to achieve the accuracy to 5 decimal places for the given parameter values, are presented all together with the results given in figures 4 and 5. 98 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović table 3 number of terms in the infinite series expansion of the expression (16) for the abep for bdpsk at the accuracy of 5 decimal places, where µ=1, l=2, ρ=0.2, and various values of parameters c and k (fig.4). ω0=0 db ω0=5 db ω0=10 db c=1, k=1 11 8 7 c=1.5, k=1 11 8 5 c=2, k=1 12 9 5 c=2.5, k=1 12 9 5 c=3, k=1 12 9 5 c=1, k=1.5 12 9 8 c=1, k=2 13 12 10 c=1, k=2.5 14 13 12 c=1, k=3 17 15 13 again, for three different values of the average power ω0 [db] as the parameters c and k increase, the number of terms needed for the series convergence increases, so convergence is slower. table 4 number of terms in the infinite series expansion of the expression (16) for the abep for bdpsk at the accuracy of 5 decimal places, where c=k=1 and parameters µ, ρ and l take various values (fig.3). ω0=0 db ω0=5 db ω0=10 db µ=1, ρ=0.2, l=2 11 8 7 µ=1.5, ρ=0.2, l=2 12 9 9 µ=2, ρ=0.2, l=2 13 11 10 µ=2.5, ρ=0.2, l=2 14 13 12 µ=3, ρ=0.2, l=2 17 15 12 µ=1, ρ=0.4, l=2 12 9 7 µ=1, ρ=0.6, l=2 13 11 7 µ=1, ρ=0.8, l=2 23 17 12 µ=1, ρ=0.2, l=3 10 9 7 µ=1, ρ=0.2, l=4 11 10 9 table 4 shows that for higher values of the parameters µ, ρ and l, more terms should be added in the expression to achieve the accuracy up to and including the fifth decimal, so convergence becomes slower. also, the higher values of the correlation coefficient require more terms. 4. gpu-enabled modelling, simulation and network planning environment 4.1. framework overview although many of the network simulators conceptualize mobile propagation models up to some point, often they involve time-consuming and inefficient computational schemes resulting in difference between simulated and realistic scenarios. to assure better simulation results and optimal computation algorithms, in this section, we present the framework for simulated transmission in a gamma-shadowed kappa-mu fading environment analyzed in gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel 99 the previous sections. the idea behind the efficiency of the approach is the implementation of the gpgpu computational units [22], [23]. the software framework has several phases. in the first phase, user defines mobile network within the graphical environment running in a web browser. various modelling aspects related to infrastructure, terrain, channel, and service consumers within smart cities, have been considered earlier [24], [25]. the quality of service (qos) parameter values are calculated with the reference to the abep values. these values and the user-defined model are taken as the input of a linear optimization mechanism. the process of linear optimization is executed, giving the optimal base station configuration and deployment as output, which is further translated to target software defined radio (sdr) commands. fig. 6 depicts the modeling and simulation environment used for network planning. fig. 6 overview of gpu-enabled mobile network modeling, planning and simulation environment: 1-creation of user-defined smart city mobile network model diagram 2-mobile network model 3-calculated qos values 4-sdr commands 4.2. gpu-enabled fading calculation traditionally, graphics processing units (gpu) perform computations only for computer graphics. the goal is to implement general-purpose gpu (gpgpu) programming to accelerate the calculations in applications that are not graphic. in [22] and [23], gpgpu has been considered as an effective approach towards performance improvement when it comes to simulations of fading effect. a pseudo-code depicting the structure of cuda kernel is given in fig. 7. fig. 7 gpu-powered cuda kernel pseudo-code for qos impact calculation in this paper, we adopt nvidia cuda for gpu-enabled calculation of abep that is further used for qos estimation of the observed system. the pseudo-code shows how calculations are distributed among different gpu computation/processing subunits to __global__ void calc_impact(location* l, float* qi) { int k = threadidx.x + blockidx.x * blockdim.x; while (k < n) { qi[k] = mgf(l->o[k])/qnf; k += blockdim.x * griddim.x; } } 100 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović achieve the speed-up. the input of this algorithm is a set of locations (denoted as *l) within the map, while the output is a set of qos impact coefficients determined for each location (denoted as *qi). to each location, ω0 value is assigned (denoted as o) and used as input of mgf function (denoted as mgf) to calculate the value of abep. furthermore, qnf is used for normalization of abep to a real number from range [0, 1] in order to express the weight of fading effect expressed by abep value among different parameters that might affect quality of service, as discussed in [25]. this value can be set by user and is determined empirically. moreover, the obtained result is further used for calculation of the next qos value at the time point t+1 at location l: (t 1, l) (t) ( 1, )qos qos qi t l+ =  + (17) to assure the computational pace, intel i7 7700-hq quad-core cpu machine at 2.8 ghz and gtx 1050 gpu with 2 gb vram, 1tb hdd and 16gb ddr4 ram is used. according to the results, the gpu-enabled calculation of qos based on abep for this type of fading is around 42 times faster than calculation done on cpu using the tool from [24]. moreover, the performance improvement using the gpgpu approach for levelcrossing rate (lcr) of the sc receiver output over α-κ-µ multipath fading channels [25] was 39 times faster while performance evaluation of md wireless communication system within weibull multipath fading channel [26] was 47 times faster. 4.3. linear optimization and qos one of the main objectives in designing and implementing wireless networks is to provide the best possible quality of service (qos). in this section, we overview the linear optimization approach to improve the qos in a real-life scenario of the transmission over gamma long-term and k-µ short-term fading channel employing a combined md system with md sc receiver and two md mrc receivers. in every fading-affected environment, qos requirements can be recognized in terms of data rates, average bit error rates, delay limits, outage probabilities and so forth. the linear optimization method presented in the following is aimed to assure the best possible data rates and lowest error rates, as well as minimum possible outage probability of the system proposed in the previous sections. the analysis is based on a mathematical model with the requirements expressed by linear relationships [27]. we define the base station basestationb, energy consumption ecb and an estimated capacity, that is the highest number of connected users cb. also, we define the location locationl for each base station and encounter the cost of energy distribution dcl as well as an estimated demand dl of service by the customers for the given location covered by the allocated base station. we will contemplate a level of qos drop qd[b,l] for each pair (basestationb, locationl). this parameter depends not only on the specific characteristics of the channel (in our scenario these would be specific fading conditions) but also the design and properties of the base station itself. the parameter is represented by the ratio between the values of maximum possible and estimated qos for the observed part of the channel: 0 max 0 [ , ] [ , ] [ , ]estimate q s b l qd b l q s b l = (18) gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel101 where x[b,l] represents the decision variable. it can take only two possible values: 1 if basestationb is at the locationl, while it takes 0 in the other case. linear optimization allows for allocating the base stations to optimal locations. this will have positive effects on the qos parameters such as the minimization of qos drop, together with reduction of costs related to energy distribution and consumption: , [ , ] [ , ] [ ] [ , ] b basestation l location minimize qd b l dc b l ec b x b l    (19) there are several conditions that must be fulfilled to successfully complete the optimization. primarily, a single base station has to be assigned to each location: [ , ] 1, b basestation x b l l location  =  (20) moreover, each base station is assigned to at most one location at the moment: [ , ] 1, l location x b l b basestation    (21) each base station assigned to a specific location has to assure the needed capacity to meet the service demand for the corresponding location: [ ] [ , ] [ ], b basestation c b x b l d l l location    (22) to implement the linear optimization program we have used the ampl1 optimization supporting system while the optimization process itself has been completed using ibm cplex2 optimizer and its option of simplex method-based solver. in table 5, an overview of the results obtained in optimization for different model sizes is given. the first model represents the number of different configurations of the involved base stations (nbs). the second column is the number of considered locations (nl). these two values determine the size of the model. the third column represents the time needed for optimization processes for the given model size. in the last column, a percentage of the cost reduction obtained in each scenario is given. according to the results in the table 5, we can observe that the cost reduction depends on the specific instance model while the time spent on optimization increases with the increase of the model size. table 5 results of the optimization for different sizes of the network model number of base stations [nbs] number of locations [nl] optimization [s] cost reduction [%] 5 4 0.05 77 10 6 0.08 54 15 8 0.14 83 1 https://ampl.com/ 2 https://www.ibm.com/analytics/cplex-optimizer https://ampl.com/ https://www.ibm.com/analytics/cplex-optimizer 102 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović 5. conclusion we have considered the combined md system with one macro-diversity sc receiver and two micro-diversity mrc receivers in a gamma long-term and κ-μ short-term fading channel has been studied. micro-diversity combines signal envelopes from multiple l antennas at the base stations. in this way multiple effects of κ-μ fading are reduced. on the other hand, md combines signals with antennas at two or more base stations which helps mitigating the effects of a long-term fading. we have derived the closed-form expressions for the moment-generating function of the signal at the output of the system for correlated composite non-homogenous fading channel for two modulation schemes: bfsk and bdpsk. using the obtained expressions, analytical expressions for abep for both modulation schemes are evaluated. the abep is improved with an increase of the number of antennas l. the increase in correlation coefficient ρ weakens the system performance. the correlation coefficient ρ has higher influence on abep for higher values of gamma long-term fading severity parameters. when ρ is one, the lowest value of the signal occurs simultaneously resulting in md-reception becoming md-reception. the abep function is smaller and the system performance is better when the number of branches in md is greater than l=2. in order to estimate the rate at which the convergence of the expressions for abep developed in the infinite series occurs, the analysis has been conducted where the needed number of terms of the series is determined for the rounding accuracy of 5 decimal places. it is observed that the series converges at a high rate, and in general, 10-15 terms need to be taken to achieve the expected accuracy. the increase of the values of parameters µ, ρ and l affects the convergence rate as more terms should be encountered to assure the stated accuracy. in the final section of the work, we have proposed the implementation of gpupowered calculations that significantly speed up the determination of qos parameters based on abep function. this is of the utmost importance for the qos performances in real-time wireless systems dealing with data transmission such as real-time video. the usage of gpgpu in a simulated model of a gamma long-term and κ-μ short-term fading environment dramatically improves the response. within the analysis for the improvement in qos parameter of the fading-affected system observed in this paper the linear optimization is proposed. the idea behind the linear optimization model is built on the optimal base station configuration and deployment scheme that can be further translated to target software defined radio (sdr) commands. the implementation of command generation mechanisms for specific sdr hardware solutions is outside the scope of this paper and will be covered by our future research. moreover, we would like to include the channel capacity calculation techniques [28] to dynamically determine the capacity parameter in linear optimization model. acknowledgement: this paper has been supported by the ministry of education, science and technological development of the republic of serbia. gpu-supported simulation for abep of macro diversity system in gamma shadowed κ-μ fading channel103 references [1] t. s. rappaport, wireless communications principles and practice. prentice hall, 2007. [2] p. s. bithas, n. c. sagias, and p. t. mathiopoulos, "the bivariate generalized-kkg distribution and its application to diversity receivers", ieee trans. on commun., vol. 57, no. 9, pp. 2655–2662, sep. 2009. [3] p. bithas, n. sagias, and t. tsiftsis, "performance analysis of dual-diversity receivers over correlated generalised gamma fading channels", iet commun., vol. 2, no. 1, pp. 174–178, 2008. [4] r. subadar, t. s. b. reddy and p. r. sahu, "performance of an l-sc receiver over kappa-mu and etamu fading channels", in proceedings of the ieee international conference on communications, cape town, 2010, pp. 1-5. [5] m. d. yacoub, "the κ−μ distribution: a general fading distribution", in proceedings of the ieee atlantic city fall vehicular technology conf., october 2001, pp. 1427–1432. [6] m. k. simon and m. s. alouni, digital communication over fading channels. 2nd ed., new jersey: wiley-interscience; 2005. [7] g. l. stuber, principles of mobile communications. 2nd ed. norwell ma: kluwer academic publishers, 2001. [8] a. s lioumpas, a. p doukeli and g. k karagiannidis, "another look at multibranch switched diversity systems", ieee commun. lett., vol. 11, no. 4, pp. 325-327, 2007. [9] p. g. stavrianos, p. s. bithas and d. s. kalivas, "an analytical study for an efficient multi‐branch switched diversity receiver", int. j. commun. syst., vol. 30, 2017. [10] e. a. neasmith and n. c. beaulieu, "new results in selection diversity", ieee trans. commun., vol. 46, no. 5, pp. 695–704, 1998. [11] m. d. yacoub, "the κ-µ distribution and the η-µ distribution", ieee antennas propag. mag., vol. 49, no. 1, pp. 68-81, 2007. [12] s. r panić, d. m stefanović, i. m petrović, m. č stefanović, j. a anastasov and d. s krstić, "secondorder statistics of selection macrodiversity system operating over gamma shadowed κ-μ fading channels", eurasip j. wirel. commun. netw., no. 151, 2011. [13] w. pearson, s. olver and m. a. porter, numerical methods for the computation of the confluent and gauss hypergeometric functions. the numerical algorithms group (nag) and the engineering and physical sciences research council (epsrc), june 2016. [14] n. sekulovic and m. stefanović, "performance analysis of system with micro and macro-diversity reception in correlated gamma shadowed rician fading channels", wirel. pers. commun., vol. 65, pp 143–156, july 2012. [15] p. m. shankar, "macrodiversity and microdiversity in correlated shadowed fading channels", ieee trans. veh. technol., vol. 58, no. 2, february 2009. [16] s. suljović, d. milić, s. panić, č. stefanović and m. stefanović, "level crossing rate of macro diversity reception in composite nakagami-m and gamma fading environment with interference", vol. 102, p. 102758, may 2020. [17] s. panic, j. anastasov, m. stefanovic, and p. spalevic, fading and interference mitigation in wireless communications. crc press: usa, 2013. [18] d. krstic, s. vasić, s. koničanin, s. suljović and m. stefanović, "mgf based calculation of abep for macrodiversity receiver over gamma-shadowed fading environment with line-of-sight", in proceedings of the 5th international conference on smart and sustainable technologies (splitech), 23-26 september 2020, pp. 1-5. [19] m. abramowitz and irene a. stegun, handbook of mathematical function with formulas, graphs and mathematical tables. national bureau applied mathematics, series 55, december 1972. [20] s. suljović, d. krstić, d. bandjur, s. veljković and m. stefanović, "level crossing rate of macrodiversity system in the presence of fading and co-channel interference", rev. roumaine des sciences techniques-série électrotechnique et énergétique, vol. 64, no. 1, pp. 63–68, 2019. [21] i. gradshteyn, i. ryzhik, tables of integrals, series, and products. academic press, new york 1994. [22] a. f. abdelrazek, m. kaschub, c. blankenhorn and m. c. necker, "a novel architecture using nvidia cuda to speed up simulation of multi-path fast fading channels", in proceedings of the vtc spring 2009 ieee 69th vehicular technology conference, barcelona, spain, 2009, pp. 1-5. [23] r. carrasco-alvarez, j. v. castillo, a. c. atoche and j. o. aguilar, "a fading channel simulator implementation based on gpu computing techniques", math. probl. eng., vol. 2015, pp. 1-8, 2015. [24] n. petrović, s. koničanin, d. milić, s. suljović and s. panić, "gpu-enabled framework for modelling, simulation and planning of mobile networks in smart cities", in proceedings of the zooming innovation in consumer technologies conference (zinc), novi sad, serbia, 2020, pp. 280-285. ../appdata/local/downloads/vol.%20102 https://ieeexplore.ieee.org/xpl/conhome/9243671/proceeding 104 n. petrović, s. vasić, d. milić, s. koničanin, s. suljović [25] d. milić, s. suljović, n. petrović, s. koničanin and s. panić, "software environment for performance of relay signal by df technique influenced by κ-μ fading", in proccedings of the 19th international symposium infoteh-jahorina, east sarajevo, bosnia and herzegovina, 2020, pp. 1-4. [26] s. suljović, d. milić and s. panić, "lcr of sc receiver output signal over α-κ-µ multipath fading channels", fu elec. energ., vol. 29, no. 2, pp. 261-268, 2016. [27] s. suljović, d. milić, z. nikolić, s. panić, m. stefanović and đ. banđur, "performance of macro diversity wireless communication system operating in weibull multipath fading environment", fu elec. energ., vol. 30, no. 4, pp. 599-609, 2017. [28] z. ji, c. dong, y. wang, and j. lu, "on the analysis of effective capacity over generalized fading channels", in proceedings of the ieee international conference on communications (icc 2014) communications theory, 2014, pp. 1977-1983. hybrid neural lumped element approach in modeling of rf mems switches facta universitatis series: electronics and energetics vol. 33, no 1, march 2020, pp. 27-36 https://doi.org/10.2298/fuee2001027c hybrid neural lumped element approach in inverse modeling of rf mems switches  tomislav ćirić 1 , zlatica marinković 1 , rohan dhuri 2 , olivera pronić-rančić 1 , vera marković 1 1 university of niš, faculty of electronic engineering, niš, serbia 2 alten gmbh, munich, germany abstract. rf mems switches have been efficiently exploited in various applications in communication systems. as the dimensions of the switch bridge influence the switch behaviour, during the design of a switch it is necessary to perform inverse modeling, i.e. to determine the bridge dimensions to ensure the desired switch characteristics, such as the resonant frequency. in this paper a novel inverse modeling approach based on combination of artificial neural networks and a lumped element circuit model has been considered. this approach allows determination of the bridge fingered part length for the given resonant frequency and the bridge solid part length, generating at the same time values of the elements of the switch lumped element model. validity of the model is demonstrated by appropriate numerical examples. key words: artificial neural networks, inverse modeling, lumped element model, rf mems switch. 1. introduction radio-frequency micro-electro-mechanical systems (rf mems) components have been proven to be of a great importance for rf circuits and subsystems, as they possess characteristics that may surpass characteristics of conventional, purely electrical components. rf mems devices consist of moving sub-millimeter-sized parts that provide radio frequency functionality. they are of high linearity, low insertion loss and extremely good intermodulation performance. mems devices have the ability to sense, control and actuate on micro scale, and generate effects on macro scale. according to variety and diversity of rf mems technology functionalities, they have wide applicability for the new generation of communication system components, like switches and varactors (variable capacitors), resonators, complex networks, reconfigurable filters, phase shifters, impedance matching tuners and programmable step attenuators [1-9]. in the recent time, the rf mems technology has found applications for internet of things (iot), internet of everything (ioe), tactile internet and 5g telecommunications [10-12]. design of the received february 20, 2019; received in revised form september 10, 2019 corresponding author: tomislav ćirić faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: cirict@live.com)  28 t. ćirić, z. marinković, r. dhuri, o. pronić-ranĉić, v. marković circuits containing rf mems switches requires repeated simulations and/or optimizations of the switch characteristics. therefore, there is a need for reliable rf mems models. switch electrical characteristics can be accurately determined in full-wave electromagnetic simulators [13-15]. however, as the simulation models are quite complex and the simulations consume a significant amount of time, a common option to overcome these problems is usage of lumped models in the circuit simulators [16, 17]. the lumped element models based on the equivalent circuits are faster than the full-wave ones. however, if differently sized bridges are analyzed, the procedures for obtaining the equivalent circuit elements have to be repeated, which is a time-consuming process. to make the lumped element model scalable with the dimensions, artificial neural networks (anns) were proposed to model the dependence of the lumped element model on the switch bridge dimensions [18]. the switch bridge dimensions determine the electromagnetic characteristics of the switch. therefore during the design of a switch, it is necessary to determine the bridge dimensions to ensure the desired switch characteristics, such as resonant frequency, i.e. to perform the inverse modeling of the switch. the authors of this work proposed earlier a black-box inverse modeling of the rf mems capacitive switches where the bridge lateral dimensions were determined for given electrical or mechanical switches [19-25]. in this work, the neural based inverse modeling approach is extended in a way that the novel approach provides not only determination of the bridge dimensions but also the values of the corresponding lumped model elements, resulting in a lumped element model ready to be used for further simulations of the circuits containing the considered switch. the paper is organized as follows: after introduction, a description of the considered rf mems switch is given in section 2. the proposed modeling approach is described in section 3. details of the model development and validation and the most illustrative numerical results are given is section 4. section 5 contains the conclusions. 2. rf mems capacitive switches mems are integrated devices consisting of micromechanical and electronic components. rf mems switches are the specific micromechanical switches that are designed to operate at rf to mm-wave frequencies. rf mems switches use mechanical movements of the bridge to achieve a closed or open circuit in the rf transmission lines. rf mems classification depends on the type of actuation, deflection axis, contact type, circuit configuration, and structure configuration. the considered device is a coplanar waveguide (cpw) based rf mems capacitive shunt switch (fig. 1(a)) designed at fondazione bruno kessler (fbk) in trento in an 8 layer silicon micromachining process [26-28]. the device is fabricated on silicon substrate and silicon dioxide (sio2) as insulator. the bridge is a thin gold (au) membrane connecting both sides of the ground plane with defined lateral dimensions (length of the fingered part lf and length of solid part – ls). the signal line is a thin aluminum layer, placed below the bridge. on the opposite sides of the signal line, the dc actuation pads made of polysilicon are placed. applying the actuation voltage on electrodes, electrostatic force becomes superior over mechanical restoring force, causes membrane to pull down towards the ground plane switching the circuit [26]. hybrid neural lumped element approach in inverse modeling of rf mems switches 29 a) b) fig. 1 (a) top-view of the realized switch and schematic of the cross-section [26] and (b) equivalent circuit of the rf mems switch rlc lumped element model the inductance of the bridge and the fixed capacitance between signal line and bridge create a resonant circuit to the ground. the resonant frequency can be adjusted by varying the length of the bridge lateral dimensions. at the series resonance, the circuit acts as a short circuit to the ground. in a certain frequency band around the resonant frequency the transmission of the signal is suppressed. an rf mems switch can be represented by a simplified equivalent circuit model, as shown in fig. 1(b). it consists of the resistance r, the inductance l and the capacitance c. two coplanar waveguide lines, cpw1 and cpw2, are added with the aim of matching the obtained s-parameters with the s-parameters obtained by a full-wave analysis, having in mind that the reference planes for simulation and measurement are usually not defined directly at the membrane but a distance apart from it [26]. the switch resonant frequency is 1 2 resf lc  . (1) the switch capacitance in the membrane down-state case, considered in this case, is calculated from the layout using the following expression [3]: d r t a c  0 , (2) where 0 is the dielectric permittivity, r is the relative dielectric permittivity, td is the distance between the two plates forming the capacitor and a is the surface of the plates. the capacitance is constant, because it does not depend on the bridge lateral dimensions. the other two elements, r and l, depend on the bridge lateral dimensions ls and lf. they can be obtained simultaneously by optimizations in a circuit simulator aimed to achieve the desired values of the equivalent circuit s-parameters. alternatively, the inductance can be determined from the given resonance frequency as: cf l res 224 1   , (3) and then only the resistance is to be obtained by optimization in a circuit simulator. it should be noted that once the capacitance is determined, the extraction of the resistance 30 t. ćirić, z. marinković, r. dhuri, o. pronić-ranĉić, v. marković and the inductance should be repeated for each considered combination of bridge dimensions, which always requires new full-wave simulations to provide inputs for optimization. following the approach proposed in [26], the lumped element scalability with the bridge lateral dimensions can be introduced by means of artificial neural networks, as will be described in the next section. 3. proposed inverse modeling approach to determine the switch lateral dimensions for the desired resonant frequency, and simultaneously to determine the corresponding equivalent circuit elements, a new inverse modeling approach is proposed in this work. the proposed approach is a hybrid approach combining neural modeling with a lumped element equivalent circuit. in other words, it is a combination of the black-box neural inverse modeling approach [19-21] and a modification of the scalable lumped element model proposed in [18]. schematic diagram of proposed model is shown in fig. 2. the aim of the first ann (ann 1) is to determine the length of the fingered part lf for the desired resonant frequency [19, 20, 22]. as described in the previous work, due to the fact that different combinations of the bridge solid and fingered parts’ lengths may lead to the same resonant frequency value, it is not possible to use this approach to determine ls and lf simultaneously. instead, the length of the solid part is considered as the inverse model input beside the resonant frequency. the second ann (ann 2) is used for modeling the relationship between the resistance and the bridge lateral dimensions ls and lf. unlike the model considered in [18] where the inductance dependence on the dimensions is modeled also by the ann, having in mind that in the considered case the resonant frequency is known, it is possible to calculate the inductance by using the eq. 3, assuming that the capacitance, which is constant and does not depend on the bridge lateral dimensions, has been determined previously. therefore the value calculated by eq. 2 is directly assigned to the capacitor in the equivalent circuit. fig. 2 proposed inverse modeling approach the used anns are multilayered anns having one input layer, one output layer and one or more hidden layers [1]. both anns have two input neurons and one output neuron. the inputs of the ann 1 correspond to the bridge solid part length ls and resonant frequency fres, and the output corresponds to the bridge fingered part lf. for the training and hybrid neural lumped element approach in inverse modeling of rf mems switches 31 validation of ann 1 it is necessary to have a set of samples consisting of a combination of dimensions and the corresponding values of the resonant frequency. that implies that simulations of the s-parameters in a full-wave simulator should be performed for each combination of the dimensions and the resonance frequency is determined as the frequency corresponding to the minimum value of the s21 magnitude. the ann 2 inputs correspond to the bridge lateral dimensions ls and lf , whereas the output corresponds to the equivalent circuit resistance r. the training samples consist of the two considered lateral dimension combinations and corresponding resistances. values of the resistance used for training are determined by optimization in a circuit simulator for the previously calculated capacitance and inductance, as described in section 2. the flow chart describing the development of the proposed model is shown in fig. 3. the optimization goal is to match the simulated resonant frequency (i.e. all scattering parameters) and the resonant frequency simulated in the full-wave simulator for the given combination of the dimensions. the implementation of anns in the equivalent circuit is done as follows. each ann is represented by a set of mathematical expressions describing the ann transfer function. the expressions corresponding to the developed anns are implemented by means of a variable and equation blocks (var) on the equivalent circuit schematic. a var block inputs and outputs are the same as the inputs and outputs of the corresponding ann. the output of the var block corresponding to the ann 1 is led to the input of the var block corresponding to the ann 2, whose output is further assigned to the resistance of the equivalent circuit. fig. 3 model development flow chart the developed inverse model does not require additional simulations in the full-wave simulator or additional optimizations. for the desired resonant frequency and a given value of the bridge solid part length, by running the s-parameter simulations, it is possible to simulate in em full-wave simulator the s-parameters for several combinations of the lateral dimensions find the resonant frequency for each combination of the lateral dimensions build the ann 1 training and test sets (ls, fres, lf) for each of the combination of the lateral dimensions determine in a circuit simulator the resistance r calculate the capacitance c (eq. 2) and the inductance l (eq. 3) build the ann 2 training and test sets (ls, lf, r) train the ann 1 (networks with different number of hidden neurons) and find the ann with the best accuracy train the ann 2 (networks with different number of hidden neurons) and find the ann with the best accuracy. create mathematical expressions describing ann 1 and ann 2 implement the expressions on the equivalent circuit schematic. 32 t. ćirić, z. marinković, r. dhuri, o. pronić-ranĉić, v. marković simultaneously calculate the length of the fingered part, determine the corresponding elements of the equivalent circuit and simulate the s-parameters over the desired frequency range. as all the operations are performed in the circuit simulator, the whole process is done within seconds, which is significantly faster than performing optimizations in a fullwave simulator for determining the dimension and optimizations in a circuit simulator to determine the resistance. 4. numerical results the proposed inverse model was developed for the following ranges of the switch geometrical parameters: ls from 50 µm to 500 µm, and lf from 0 µm to 100 µm. to prepare the data for the model development, the equivalent circuit elements r, l and c were determined for several different combinations of the lateral dimensions ls and lf. the relative permittivity of silicon dioxide is 3.9 and the dimensions contributing to the capacitance value in the down-state are a = 13000 μm 2 and td = 0.1 μm. therefore, by using eq. 2, the calculated capacitance in the down-state is 4.48695 pf. for each combination of ls and lf, first the s-parameters were determined by full-wave simulations in advanced design system (ads) momentum software [29] and the resonant frequency was determined as the minimum of the s21 parameter magnitude. further, the combinations of the lateral dimensions and the resonant frequencies obtained by ads simulations were used for training the ann 1. the available dataset was divided into the training set used for the development of the anns and the test set used for the model validation. anns with different number of hidden neurons in one or two hidden layers were trained, because a prior determination of number of hidden neurons is not possible. the networks with the best test results were chosen as the final model. in this paper, the following notation of anns is used: ann denoted with n-h1-h2-m, has n input neurons, h1 and h2 neurons in the first and second hidden layer, respectively, and m output neurons. in the table 1, there are test results obtained by the best ann 1 (2-15-15-1) for the input combinations whose values did not appear in the training set [19, 22]. table 1 rf mems switch inverse modeling results: lf ls (m) fres (ghz) lf (target) (m) lf (from ann 1) (m) lf abs. error (m) lf relative error (%) 5 22.78 25 24.9 0.1 0.4 75 19.17 65 65.4 0.4 0.6 75 17.92 85 85.3 0.3 0.3 100 17.5 75 73.6 1.4 1.9 200 13.13 85 86.8 1.8 2.1 350 11.67 25 23.4 1.6 6.4 350 10.83 65 62.2 2.8 4.3 400 10 85 87.4 2.4 2.9 the relative errors are in most cases less than 3%. however, the absolute difference of the predicted and expected values is less than 3 µm, which is already close to fabrication tolerances. more details about the development and validation of the mentioned inverse model can be found in [19, 22]. hybrid neural lumped element approach in inverse modeling of rf mems switches 33 further, the resonant frequency and the capacitance were used to determine the inductance for each combination of ls and lf. the inductance is calculated by using eq. 3 and achieved results are presented in table 2. in next step, the neural model for determining the resistance for the given dimensions (ann 2) was developed. the target resistance values were obtained by optimization of the resistance value for each considered combination of the dimensions. cpws of 50  were used. among the trained anns with different numbers of hidden neurons, the best results were obtained by ann which has the structure 2-4-8-1. the resistance obtained by ann 2 for the eight test combinations not used for the network training are shown in table 2. table 2 extracted equivalent circuit elements ls (m) lf (from ann 1) (m) c (pf) fres (ghz) l (ph) r (from ann 2) (mω) 75 24.9 4.48695 22.78 10.879 638.05 75 65.4 4.48695 19.17 15.363 739.45 75 85.3 4.48695 17.92 17.581 763.26 100 73.6 4.48695 17.5 18.435 764.92 200 86.8 4.48695 13.13 32.748 857.68 350 23.4 4.48695 11.67 41.455 908.49 350 62.2 4.48695 10.83 48.135 946.07 400 87.4 4.48695 10 56.457 977.75 to validate further the proposed hybrid inverse modeling approach, for the test combinations of the bridge dimensions, the calculated c, l and r were assigned to the corresponding equivalent circuit elements, and used for the s-parameter simulation. the comparison of rf mems switch s-parameters simulated by the equivalent circuit and the s-parameters determined by the ads momentum simulations shows a very good match. as an illustration, in fig. 4 and fig. 5 the insertion loss (|s21| in db) and the return loss (|s11| in db) are shown for two devices with different lateral dimensions: the first one having ls = 100 µm and lf = 75 µm, and the second device with ls = 350 µm 5 10 15 20 25 30 350 40 -20 -15 -10 -5 -25 0 f (ghz) |s 1 1 | (d b ) db(s(1,1)) db(sref(1,1)) 5 10 15 20 25 30 350 40 -30 -20 -10 -40 0 f (ghz) |s 2 1 | (d b ) db(s(2,1)) db(sref(2,1)) fig. 4 s11 and s21 of rf mems switch for ls = 100 µm and lf = 75 µm (rlc model red solid line, full-wave simulations – blue dashed line) 34 t. ćirić, z. marinković, r. dhuri, o. pronić-ranĉić, v. marković 5 10 15 20 25 30 350 40 -20 -15 -10 -5 -25 0 f (ghz) |s 1 1 | (d b ) db(s(1,1)) db(sref(1,1)) 5 10 15 20 25 30 350 40 -20 -10 -30 0 f (ghz) |s 2 1 | (d b ) db(s(2,1)) db(sref(2,1)) fig. 5 s11 and s21 of rf mems switch for ls = 350 µm and lf = 25 µm (rlc model red solid line, full-wave simulations – blue dashed line) and lf = 25 µm. as can be seen, in both cases the response of the equivalent circuit is almost identical to the reference response obtained by the full wave simulations, confirming the accuracy of the proposed approach. the results referring to the bridge with lateral dimensions ls = 350 µm and lf = 25 µm have been shown with the aim to show the results for the case where ann 1 exhibits the biggest deviation between modeled and reference values. even in that case, the circuit responses are almost identical and very close to the target values obtained by the full-wave simulations. 5. conclusion in this paper, a new approach to rf mems capacitive switch inverse modeling has been proposed. it is a hybrid approach combining artificial neural networks and a lumped element equivalent circuit model. the inverse approach proposed earlier by the authors aimed only to determine switch dimensions for the given resonant frequency. the inverse modeling approach proposed in this paper can be used to determine not only the necessary length of the bridge fingered part to achieve the given resonant frequency for the given value of the bridge solid part length, but also to determine the elements of the switch equivalent circuit in a full-wave simulator. after the anns composing the model have been developed, determination of the bridge fingered part length and the elements of the equivalent circuit are done straightforwardly without additional optimizations, making the process of inverse modeling very time-efficient. according to the obtained results, the accuracy of the determination of the bridge fingered part is within the fabrication tolerances. moreover, the s-parameters simulated by using the equivalent circuit elements obtained by this approach match well the s-parameters obtained by full-wave simulations, confirming the accuracy of the equivalent circuit parameter extraction. acknowledgement: the work was supported by the projects tr-32052 and iii-43102 of the serbian ministry of education, science and technological development. hybrid neural lumped element approach in inverse modeling of rf mems switches 35 references [1] q. j. zhang, k. c. gupta, neural networks for rf and microwave design, artech house, 2000. [2] m. gad-el-hak, the mems handbook florida: crc pres, 2002 [3] g. m. rebeiz, rf mems theory, design, and technology. new york: wiley, 2003. [4] g. m. rebeiz, j. b. muldavin, "rf mems switches and switch circuits," ieee microw. mag., vol. 2, no. 4, pp. 59-71, december 2001. [5] y. mafinejad, a. z. kouzani, k. mafinezhad, "determining rf mems switch parameter by neural networks", in proceedings of the ieee region 10 conference tencon 2009, 2009, pp. 1-5. [6] l. michalas, m. koutsoureli, e. papandreou, a. gantis, g. papaioannou “a mim capacitor study of dielectric charging for rf mems capacitive switches”, facta universitatis, series: electronics and energetics, vol. 28, no. 1, pp. 113-122, 2015. [7] m. koutsoureli, l. michalas, g. papaioannou, “assessment of dielectric charging in micro-electromechanical system capacitive switches”, facta universitatis, series: electronics and energetics, vol. 26, no. 3, pp. 239-245, 2013. [8] a. napieralski, c. maj, m. szermer, p. zajac, w. zabierowski, m. napieralska, ł. starzak, m. zubert, r.kiełbik, p. amrozik, z. ciota, r. ritter, m. kamiński, r. kotas, p. marciniak, b. sakowicz, k. grabowski, w. sankowski, g. jabłoński, d. makowski, a. mielczarek, m. orlikowski, m. jankowski, p. perek, “recent research in vlsi, mems and power devices with practical application to the iter and dream projects”, facta universitatis, series: electronics and energetics, vol. 27, no. 4, pp. 561-588, 2014. [9] i. jokić, m. frantlović, z. đurić, m. dukić, "rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise", facta universitatis, series: electronics and energetics, vol. 28, no. 3, pp. 345-381, 2015. [10] j. iannacci and c. tschoban, "rf-mems for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 ghz, " journal of micromechanics and microengineering (iop-jmm), vol. 27, no. 4, pp. 1-11, apr. 2017. [11] j. iannacci, "rf-mems technology as an enabler of 5g: low-loss ohmic switchtested up to 110 ghz", sensors and actuators a, vol. 279, pp. 624-629, 2018. [12] m. donelli, j. iannacci, "exploitation of rf-mems switches for the design of broadband modulated scattering technique wireless sensors", ieee antennas and wireless propagation letters, vol. 18, no. 1, january 2019. [13] e. hamad and a. omar, "an improved two-dimensional coupled electrostatic-mechanical model for rf mems switches", j. micromech. microeng., vol. 16, pp. 1424, 2006. [14] l. vietzorreck, "em modeling of rf mems," in proceedings of the 7th international conference on thermal, mechanical and multiphysics simulation and experiments in micro-electronics and microsystems, eurosime 2006, como, italy, april 24-26, 2006, pp.1-4. [15] z. j. guo, n. e. mcgruer and g. g. adams, "modeling, simulation and measurement of the dynamic performance of an ohmic contact, electrostatically actuated rf mems switch", j. micromech. microeng, vol. 17, pp. 1899-1909, 2007. [16] j. iannacci, r. gaddi, a. gnudi, "a experimental validation of mixed electromechanical and electromagnetic modeling of rf-mems devices within a standard ic simulation environment", journal of microelectromechanical systems, vol. 19, no. 3, pp. 526-537, 2010. [17] http://www.coventor/mems-solutions/products/mems [18] t. ćirić, r. dhuri, z. marinković, o. pronić-ranĉić, v. marković, l. vietzorreck, "neural based lumped element model of capacitive rf mems switches", frequenz, vol. 72, no. 11-12, november 2018. [19] z. marinković, t. ćirić, t. kim, l. vietzorreck, o. pronić-ranĉić, m. milijić, v. marković, "ann based inverse modeling of rf mems capacitive switches", in proceedings of the 11th conference on telecommunications in modern satellite, cable and broadcasting services (telsiks 2013), serbia, october 16-19, 2013, pp. 366-369. [20] z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić, "artifical neural networks in rf mems switch modelling", facta universitatis, series: electronics and energetics, vol. 29, no 2, pp. 177191, 2016. [21] t. ćirić, z. marinković, o. pronić-ranĉić, v. marković, l. vietzorreck, "ann approach for modeling of mechanical characteristics of rf mems capacitive switches an overview", microwave review, vol. 23, no. 1, pp. 25-34, june 2017. [22] z. marinković, t. kim, v. marković, m. milijić, o. pronić-ranĉić, t. ćirić, l. vietzorreck, "artificial neural network based design of rf mems capacitive shunt switches", applied computational electromagnetics society (aces) journal , vol. 31 no. 7, pp. 756-764, july 2016. 36 t. ćirić, z. marinković, r. dhuri, o. pronić-ranĉić, v. marković [23] t. ćirić, z. marinković, t. kim, l. vietzorreck, o. pronić-ranĉić, m. milijić, v. marković, "ann based inverse electro-mechanical modeling of rf mems capacitive switches", in proceedings of the xlix scientific conference on information, communication and energy systems and technologies (icest 2014), niš, serbia, june 25-27, 2014, vol. 2, pp. 127-130. [24] z. marinković, a. aleksić, t. ćirić, o. pronić-ranĉić, v. marković, l. vietzorreck, "inverse electromechanical ann model of rf mems capacitive switches-applicability evaluation", in proceedings of the xlx scientific conference on information, communication and energy systems and technologies (icest 2015), sofia, bulgaria, june 24-26, 2015, pp. 157-160. [25] t. ćirić, z. marinković, m. milijić, o. pronić-ranĉić, v. marković, l. vietzorreck, "modeling of actuation voltage of rf mems capacitive switches based on rbf anns", in proceedings of the 13th symposium on neural networks and applications (neurel), belgrade, serbia, november 22-24, 2016, pp. 119-122. [26] s. dinardo, p. farinelli, f. giacomozzi, g. mannocchi, r. marcelli , b. margesin, p. mezzanotte, v. mulloni, p. russer, r. sorrentino, f. vitulli, l. vietzorreck, "broadband rf-mems based spdt", in proceedings of the european microwave conference 2006, manchester, great britain, september 2006. [27] f. giacomozzi, v. mulloni, s. colpo, j. iannacci, b. margesin, a. faes, "a flexible fabrication process for rf mems devices", romanian journal of information science and technology (romjist), vol. 14, no. 3, 2011. [28] d. dubuc, k. grenier, j. iannacci, "rf-mems for smart communication systems and future 5g applications", in smart sensors and mems -intelligent sensing devices and microsystems for industrial applications, 2nd edition, editors: s. nihtianov, a. luque, chapter 18, elsevier ltd. amsterdam, nl, pp. 499-539, march 2018. [29] advanced design system 2009, santa rosa, ca: electronic design automation software system produced by keysight eesof eda. facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. 71-88 https://doi.org/10.2298/fuee2101071d © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper wavelet-based audio features of dc motor sound* đorđe damnjanović1, dejan ćirić2, zoran perić2 1university of kragujevac, faculty of technical sciences čačak, čačak, serbia 2university of niš, faculty of electronic engineering, niš, serbia abstract. the usage of wavelets is widespread in many fields nowadays, especially in signal processing. their nature provides some advantages in comparison to the fourier transform, and therefore many applications rely on wavelets rather than on other methods. the decomposition of wavelets into detail and approximation coefficients is one of the methods to extract representative audio features. they can be used in signal analysis and further classification. this paper investigates the usage of various wavelet families in the wavelet decomposition to extract audio features of direct current (dc) motor sounds recorded in the production environment. the purpose of feature representation and analysis is the detection of dc motor failures in motor production. the effects of applying different wavelet families and parameters in the decomposition process are studied using sounds of more than 60 motors. time and frequency analysis is also done for the tested dc motor sounds. key words: wavelets, detail coefficients, approximation coefficients, audio features, dc motors 1. introduction wavelets can be used for different purposes, including de-noising, signal parameterization and analysis [1]. among other methods, wavelets are proposed to overcome certain limitations of the fourier transform, especially when the time domain resolution is in focus [2-4]. roots of wavelet method date back to 1909 when alfred haar proposed wavelets as an alternative method to fourier transform, although fourier himself had mentioned wavelets as a mathematical model in his papers earlier [3]. during the century, particularly in the last few decades, scientists developed wavelet families for various applications. these families are often named by the scientists: gabor, morlet, daubechies, haar, meyer, etc. however, received june 24, 2020; received in revised form december 24, 2020 corresponding author: đorđe damnjanović faculty of technical sciences čačak, svetog save st. 65, 32000 čačak, serbia e-mail: djordje.damnjanovic@ftn.kg.ac.rs *an earlier version of this paper was presented at the 6th international conference on electrical, electronic and computing engineering “(ic)etran 2019”, june 3 6, 2019, in silver lake, serbia [1] mailto:djordje.damnjanovic@ftn.kg.ac.rs 72 đ. damnjanović, d. ćirić, z. perić there are others named by their shape or mathematical model: mexican hat, biorthogonal, reverse biorthogonal, etc [2,3]. lots of studies have shown that wavelets can be used in different areas. most common applications of wavelets are present in signal processing, usually when denoising of signals such as audio signals, images, special acoustical signals (for example room impulse responses) and biomedical signals (electromyogram, electrocardiograph and electroencephalogram) is in focus [2-6]. the usage of wavelets is widespread, not only for noise removal. remote sensing of very low-frequency signals and estimation of truncation time of a room impulse response are also applications where wavelets have found their place [7,8]. recently, increased interest in both academia and industry has been shown for audio signal classification, audio event detection and auditory scene recognition. this kind of audio signal processing plays a vital role in biomedical engineering, mechanical engineering, telecommunications, acoustics, etc. in that regard, different features of audio signals are extracted and used for classification, detection and recognition purpose [9,10]. some of those features are based on wavelets [11,12]. although they are not frequently used, their potentials are quite perspective as they can provide good results in artificial intelligence based automated classification for particular applications such as industrial monitoring [10,13] or musical acoustics [12]. one of the significant problems always present in the industry is how to assess the quality of a product (e.g., produced motors) or how to detect a faulty product (motor) and recognize the failure type. several different approaches are already presented [13]. unfortunately, there is no established optimum approach. the one attracting significant attention lately is based on usage of sound generated by the tested product. on the other hand, thanks to recent development in audio signal processing and artificial intelligence, advanced machine/deep learning-based methods have become available options in product quality assessment. here, since every product has its specific sound characteristics, a logical solution would be to apply a customized set of audio features and classification algorithm appropriate for that particular use-case. the literature shows that signal decomposition into detail and approximation coefficients can be used for feature extraction, especially when audio signals and images are in focus [9,14]. this paper presents the study’s results using wavelet decomposition into detail and approximation coefficients as audio features for a classification purpose. sounds of more than 60 recorded dc motors, faulty and non-faulty ones, are analyzed by applying the wavelet decomposition. since there are several parameters of wavelets, the effects of changing these parameters on a set of audio features consisting of detail and approximation coefficients are investigated. besides, the possibilities of using statistics of the extracted waveletbased audio features consisting of absolute and mean values as well as standard deviation are observed, too. the goal is to define a procedure and relevant audio features capable of making a distinction between sounds of faulty and non-faulty motors. in that regard, the frequency analysis of motor sounds is also done for a better understanding of signal nature and results. the processing is done in matlab software package, and representative examples are presented here. the paper is organized in five sections including introduction and conclusion. section 2 provides relevant background information. section 3 presents the methodology of this research step by step. section 4 gives the results of analysis of wavelet-based features wavelet-based audio features 73 extracted from dc motor sounds. the paper is concluded in section 5 with suggestions for future work. 2. related work techniques used for detection of failures (faults) in motors include vibration monitoring (vibration signature), motor current signature analysis (mcsa), electromagnetic field monitoring, chemical analysis, temperature measurement, infrared measurement, acoustic noise analysis (sound signature), and partial discharge measurement [15]. among these, current signature, vibration signature and sound signature analysis are the most common in use [16]. mcsa is a rather popular and reliable technique providing good results, although in some cases, it is not sensitive enough because of the low signal-to-noise ratio. it also has spectral leakage and low-frequency resolution as well as the installation can be complicated [16]. vibration analysis requires appropriate sensors (accelerometers), which can be an additional expense, and sometimes it is not easy to correctly place the sensor in the right position. the latter is especially valid in industrial environment where dust, moisture and high temperature is often present [15,16]. sound analysis is contactless, low-cost and easy installation approach, where problem typically comes from the noise of the industrial environment. mcsa is often used in combination with sound signature analysis [16,17]. these techniques, particularly sound signature analysis, are used in analyzing and detection of rotor faults, bearing faults and unbalanced faults in wings [15]. the development and popularity of machine/deep learning techniques have led to their usage in various areas, including fault detection in different types of motors [18]. here, they can be considered an upgrade of the traditional techniques able to give better results and more advanced functionalities. machine/deep learning techniques include wellknown algorithms like support vector machine, k-nearest neighbors (knn), neural networks, cross-validation, etc. [18-20]. different types of knn algorithms like fine knn, weighted knn and subspace knn can provide classification accuracy close to 100 % for all motor faults tested in ref. 21. it is worth mentioning that machine learning requires an adequate set of features to be provided at the input [19,20]. different methods can be applied for feature extraction, and different features can be used for audio signal parameterization [18,19,21]. features are typically divided into categories such as time domain features (e.g., zero-crossing rate), frequency domain features (e.g., fundamental frequency and spectral peaks) or perceptual domain features (e.g., loudness, sharpness and roughness) [10]. there are some recent studies where wavelet-based features are applied for motor faults detection and motor classification [11,12,17,22]. an example is [22], where experimental results prove that wavelets can be used for this purpose as simple, easy and fast method. audio signals can be decomposed by the wavelet transform into detail and approximation coefficients considered as wavelet-based features. typically, the pre-processing stage precedes the wavelet transform. in this stage, audio signals are divided into smaller segments (short-term frames) with certain overlap, although in literature, it can be found that wavelet transform is also implemented on longer (mid-term) frames or whole signals [11,17,22]. considering all three cases, the feature extraction results depend on many factors, including the type and size of the recorded signal. for longer signals, segmentation is necessary, while for shorter signals, segmentation can sometimes be skipped [22]. frame size can vary, but it is 74 đ. damnjanović, d. ćirić, z. perić important to emphasize that shorter frames can provide better classification results. also, it is important to mention an overlap of frames, where in most cases, it is 50% of frame size [23], although it could even be 75% [22], while some authors do segmentation without any overlap [11,17]. as audio signals usually contain noise, de-noising in pre-processing can often be beneficial. de-noising can be done by applying wavelets, notch filtering, moving average filtering, etc. [11,17]. one of the steps in feature processing can be calculating the statistical values of the obtained detail and approximation coefficients. since it has been shown that coefficient’s negative values can cause errors in classification [17], an alternative can be to work with their absolute values. the coefficient statistics also includes the mean of absolute values, standard deviation and ratio of absolute mean values providing additional information about features [9,24,25]. regarding the application of wavelets for fault analysis in different types of motors, the most common wavelets are haar and daubechies, although coiflets, symlet and mеyer wavelets are also proposed for that purpose [11,17]. the selection of adequate wavelet type is not an easy task, especially in some cases. for example, certain wavelet families, like daubechies, have a large number of different functions (there are up to 45 daubechies wavelet functions when matlab is used). in [12], authors present their research about the choice of right wavelets for the classification of percussive sounds. besides the selection of appropriate audio features, it is also important to choose the right classifier. similar to the situation with features, different classifiers are proposed and used in studies [15-17]. for the majority of authors, the level of decomposition in the wavelet transform is one of the most important parameters whose effects need to be investigated. as decomposition level increases, loss of resolution can be a major problem in the obtained coefficients [12,26]. for example, the first level coefficients extract the finest resolution. some authors use the decomposition up to level 8 or 9 [11-13], while some other authors have a standpoint that suitable results can be obtained using much lower levels, for example, 3, 4 or 5 [15,26]. 3. methods of analysis more than 60 dc motors are included in the analysis. some of the important characteristics of these motors are: input voltage from 12 v to 13 v, no load speed (rotation per minute) about 80, maximum output power from 18 w to 25 w, approximate dimensions 16  13.5  4.5 cm. the sound of each motor was recorded in an anechoic boot located in the production hall of the motor manufacturer. the anechoic boot has a “box in a box” construction. the outer box is a semi-anechoic chamber (only the floor is reflective) representing a working place of an operator performing the measurements. the inner box is a small sound insulated boot of approximate volume of 0.5 m3. the ambient noise outside the anechoic boot is generally rather high, since it is mainly generated by machinery located in the production hall. however, since the measurements were done during weekends when only a minority of machines was active, the ambient noise inside the inner boot was significant only at low frequencies, mainly below 300 hz. the motors were placed on a test bench provided by the motor manufacturer, see fig. 1. this test bench was able to drive the motors with adequate force and to apply an adequate load simulating real conditions. the motors were driven in two directions of wavelet-based audio features 75 rotation, where operation in each direction lasted approximately 8 s. the measuring microphone was placed about 40 cm from the tested motor. fig. 1 test bench driving the motors with adequate force and applying adequate load pre-processing here is related to the extraction of relevant parts of the recorded audio signals and segmentation when it is required. in order not to use the transition regions in the beginning and at the end of the signals, their medium parts of a duration of 5 s for each direction of rotation are extracted and further processed. the wavelet-based features are extracted either from the whole signals or from signals divided into segments. according to literature, the size of segments (frames) and overlap between them can vary from one study to another. the signals are here segmented in short-term frames of 50 ms with an overlap of 50%, that is, 25 ms. the starting point in the analysis is to observe the dc motor sounds in time and frequency domain in order to notice specific sound properties, and, if possible, make a distinction between motors with certain faults (faulty motors) and motors with good characteristics (non-faulty motors). since these motors are brand new ones, it is expected that there will be only tiny differences among their sounds in most cases. the exceptions are expected to be seen only in rare cases of serious failures. separation between non-faulty and faulty motors is done by the experienced personnel of the motor manufacturer. the most common faults found in these motors are commutator faults, mechanical unbalance, bearing and gearbox defects. wavelet-based feature extraction starts with the decomposition of an audio signal. the decomposition is usually done using discrete wavelet transform (dwt) rather than continuous wavelet transform (cwt) because of its easier implementation in multilevel signal decomposition [3-5]. every signal is decomposed into detail and approximation coefficients (high and low-frequency components) at each level [3-6]. this is why the dwt is equivalent to low and high pass filtering [4]. fig. 2 presents the whole process of decomposition down to level 3, where lp is a low-pass filter, hp is a high-pass filter, ax 76 đ. damnjanović, d. ćirić, z. perić stands for approximation coefficients at decomposition level x, dx stands for detail coefficients at decomposition level x, and 2↓ is down-sampling. fig. 2 block diagram of wavelet transform decomposition into detail and approximation coefficients different wavelets are applied to the pre-processed signals to provide an adequate set of wavelet-based features being able to make a difference between faulty and non-faulty motors. generally speaking, the most common wavelet used in audio signal processing is the haar wavelet. this wavelet is proved to be the most stable in signal de-noising, although daubechies wavelets provide somewhat better results than haar in this particular application [5]. other wavelet families used here are: coiflets, symlet, biorthogonal, reverse biorthogonal and discrete mеyer. investigation of the effects of wavelet decomposition level is an important part of the analysis, too, especially because many authors use different values for this parameter. here, the levels of decomposition from 1 to 8 are used. when the wavelet decomposition is applied to the whole pre-processed signals, absolute values of the obtained detail and approximation coefficients at each decomposition level are treated as wavelet-based features. on the other hand, when the wavelet decomposition is applied to the segmented signals, the mean and standard deviation of the coefficients as well as of absolute values of the coefficients obtained from the segments are considered to be the wavelet-based features. apart from the analysis of the recorded signals in time and frequency domain, their wavelet-based features are analyzed in detail, too. special attention is paid to differences between faulty and non-faulty motors in any of these domains, and to the correlation between the results in different domains (if any). in order to quantitatively evaluate the performance of the wavelet-based features in making a distinction between the motors, a measure named feature difference is calculated as the mean value of differences between the features for non-faulty and faulty motor from all segments normalized by the mean feature value. wavelet-based audio features 77 the processing described is done in matlab software package. the fully automated software application is created. the selected wavelets and level of decomposition are applied to the defined signals using the command wavedec. the detail and approximation coefficients are generated utilizing two commands appcoef and detcoef, respectively, according to the level of decomposition. other used supporting functions belong to the standard ones for matlab software. a block diagram of the whole processing including analysis in time and frequency domain as well as wavelet-based feature extraction and quantification is shown in fig. 3. fig. 3 block diagram of the processing applied in the time, frequency and feature domain 4. results although more than 60 motors are used in the analysis, only the representative cases are included here illustrating typical behavior of these motors regarding the analyzed issues. the investigation results obtained by applying the wavelet decomposition to the whole pre-processed signals are given first. they are followed by the results obtained from the segmented pre-processed signals. these two approaches in applying the wavelets for audio feature extraction are compared afterward. 4.1. analysis of full-length signals the whole (full-length) pre-processed sounds of the duration of 5 s of both faulty and non-faulty dc motors in one direction of rotation in the time domain are given in fig. 4 (a). results show that there are certain fluctuations of amplitude (levels) in time. in some cases (signals), these amplitude fluctuations are more prominent. the fluctuations can have a shape similar to a low-frequency pattern, or some sudden onset of high amplitude can appear in particular time moments. however, it is rather difficult to distinguish between non-faulty and faulty motors considering only the signals in the time domain. by analyzing the spectra of the signals shown in fig. 4 (b), it can be seen that there are some prominent low-frequency components (below 100 hz) mainly caused by the ambient noise. in the remainder of the frequency range, some peaks and dips appear. one more observation (not shown here) is that distinction between directions of rotation can be made in an easier way in the spectral domain than in the time domain. however, even in the spectral domain, it is not easy to differentiate the faulty motors from the non-faulty motors. in that regard, it would be very beneficial to find an alternative approach/domain able to make a clearer distinction between these motors. 78 đ. damnjanović, d. ćirić, z. perić fig. 4 pre-processed sound signals of non-faulty (blue) and faulty (red) dc motors for the direction of rotation 1: (a) time domain, (b) frequency domain when the wavelets are applied to the full-length pre-processed signals, the results are the detail and approximation coefficients of these particular signals. the decomposition process using daubechies 2 wavelet (db2 in matlab) and decomposition levels from 1 to 8 is illustrated in fig. 5, where absolute values of the detail coefficients for the sound of a non-faulty and faulty dc motor are shown. fig. 5 detail wavelet coefficients after applying daubechies 2 wavelet to full-length signals (with taking coefficient absolute value) for non-faulty (blue) and faulty motor (red) for the direction of rotation 1, and using the decomposition levels from 1 to 8 the detail coefficients for the majority of decomposition levels are rather similar for the non-faulty and faulty motor. this is valid for the levels 1 and 2 as well as for the wavelet-based audio features 79 levels from 5 to 8. however, the coefficients for the decomposition levels 3 and 4 show some differences, since the values of detail coefficients for the faulty motor are greater than those for the non-faulty motor. the noticed difference between non-faulty and faulty motor represents a promising result that will be explored in more detail later. from a general point of view, it is worth noting that the length of detail coefficient array becomes shorter with the increase of the decomposition level, which is an inherent property of the wavelet decomposition. the results for detail coefficients obtained using different decomposition levels could have a certain correlation with the signal representation in the frequency domain, that is, the signal spectrum. all measured signals are sampled at 16 khz, so the maximum frequency of the signals is 8 khz. as described above (see fig. 2), the decomposition starts at level 1, where the signal is passed through a high pass and low pass filter yielding the detail and approximation coefficients at the decomposition level 1, respectively [27]. these coefficients are then down sampled by 2, and the procedure is repeated until the final decomposition level is reached. in this manner, the signal frequency range is divided into two equal parts (related to detail and approximation coefficients) at every level of decomposition. following the described procedure, the frequency range up to 8 khz is first divided into upper part (from 4 khz to 8 khz related to the detail coefficients at the decomposition level 1) and the lower part that is further divided at the next decomposition level. in that respect, the frequency content from 4 khz to 8 khz is somehow correlated with the detail coefficients at the decomposition level 1 (d1). what is worth emphasizing is that the detail coefficients represent the wavelet filtered data in time, while the spectrum is a spectral representation of the signal calculated from the whole time interval used for the analysis. as the decomposition goes through the next decomposition levels, up to level 8, the frequency range related to the detail coefficients at every next level is halved. thus, the frequency ranges after halving become: from 2 khz to 4 khz at the decomposition level 2, from 1 khz to 2 khz at the decomposition level 3, etc. the lower part of the frequency range at the last decomposition level is related to the approximation coefficients, and in the presented case it is from dc to 31.25 hz. this procedure is illustrated in fig. 4 (b) by vertical lines and symbols d1 to d8. 4.2. decomposition of segmented signals most authors have reported that segmenting the signals into frames might improve the results in the feature extraction using wavelets [11,17,23]. when a single frame is observed, the decomposition using wavelets is done in the same way as in the case of full-length signals. every frame is decomposed using a particular wavelet (daubechies 2 in this case) up to level 8. however, opposite to the case when the full-length signal is decomposed, here the feature vectors consisting of the mean values and standard deviations of detail coefficients represented by their absolute values have the same length independently of the decomposition level, see fig. 6. the same sounds are used for both figures 5 and 6. in a similar manner as in fig. 5, the most prominent differences between the nonfaulty and faulty motors exist at the decomposition levels 3 and 4. as mentioned above, these results are consistent with those from the frequency domain, where the biggest differences are present in the range from 1 khz to 2 khz and from 500 hz to 1 khz, see fig. 4 (b), related to the decomposition levels 3 and 4. comparing the features obtained using mean values, fig. 6 (a), and standard deviation, fig. 6 (b), they both lead to certain 80 đ. damnjanović, d. ćirić, z. perić differences between the non-faulty and faulty motors, although the mean values provide more stable results. in that regard, both procedures (mean value based and standard deviation based) can be used for feature extraction. fig. 6 detail coefficients after applying daubechies 2 wavelet to segmented signals (with taking coefficient absolute value) of non-faulty (blue) and faulty motors (red) up to level 8 of decomposition: (a) mean values, (b) standard deviation to show the extent to which the proposed features vary in the case of the non-faulty motors in reference to the faulty motors, the detail coefficients at the decomposition level 4 of eleven non-faulty motors and one faulty motor are presented in fig. 7. the detail coefficient mean values for the non-faulty motors are concentrated in a rather narrow region having smaller feature values than the faulty motor. thus, there is a prominent difference between the non-faulty and faulty motors. wavelet-based audio features 81 fig. 7 mean values of detail coefficients after applying daubechies 2 wavelet to segmented signals (with taking coefficient absolute value) of eleven non-faulty motors (blue) and one faulty motor (red) at decomposition level 4 as done in the previous research of the authors of this paper (see [1]), mean values and standard deviation of the detail coefficients without applying absolute value are also used for feature extraction in some other papers as well [1,13,22]. the wavelet-based features (detail coefficients) obtained in this way using the same sounds from figures 5 and 6 are shown in fig. 8. however, these results are not as good as those presented in fig. 6. the procedure employing mean values (but without taking the absolute value of detail coefficients) provides almost no difference between non-faulty and faulty motors. on the other hand, the procedure employing standard deviation without absolute value can result in certain, but rather small difference between compared motors, as shown in fig. 8 (b). the mentioned observations are logical since detail coefficients are bipolar having a mean value close to zero, while standard deviation is calculated using the square function, eliminating the bipolarity. this trend of having worse results without absolute value than with absolute value appears in almost all analyzed dc motors. this is why the procedure without absolute value will no longer be considered during this research. 4.3. effects of changing the wavelet function when the wavelet function is changed from daubechies 2 to other functions (haar, symlet, coiflet, biorthogonal, reverse biorthogonal, mеyer), the patterns of detail and approximation coefficients are also changed to a certain extent. fig. 9 illustrates four cases of usage of different wavelet functions (haar, simlet 8, coiflet 5 and discrete meyer) applied to the segmented signals of non-faulty and faulty dc motors. only the wavelet-based features for the first four decomposition levels obtained using absolute and mean values of the detail coefficients are shown. haar wavelet proved to be the most stable one in the previous research [5,8], but differences between non-faulty and faulty motors obtained with haar wavelet, in this case, are smaller than those obtained using daubechies 2. the other three wavelets provide rather similar results like the ones presented in fig. 6. the described observations are quantitatively supported by the measure feature difference calculated as explained in section 3. for the decomposition level 4, the wavelets whose results are shown in fig. 9 lead to the following values of the feature difference: daubechies 2 leads to the feature difference of 0.68, symlet 8 to 0.72, coiflet 5 to 0.69 and discrete meyer to 0.75, while haar wavelet leads to the difference of 0.37. these results for feature differences confirm that haar wavelet provides smaller difference between non-faulty and faulty motors than daubechies 2 wavelet or any other used here. 82 đ. damnjanović, d. ćirić, z. perić fig. 8 detail coefficients after applying daubechies 2 wavelet to segmented signals (without taking coefficient absolute value) of non-faulty (blue) and faulty motors (red) up to level 8 of decomposition: (a) mean values, (b) standard deviation 4.4. differences between motors in detail coefficients and spectra from the analysis of detail coefficients and time/frequency characteristics of sounds of all used dc motors, two specific cases of correlation of results from different domains stand out. the first case (case 1) is similar to the one given in figures 5, 6 and 9, where there are certain differences between non-faulty and faulty motors in both detail coefficients and spectra. here, the differences in detail coefficients at a particular decomposition level are related to the differences in spectra in a particular frequency range, as explained in section 4.1, see fig. 4 (b). the second case (case 2) is opposite to the first one. in this case, there are almost no differences in the detail coefficients and spectra between the non-faulty and faulty motors. again, the differences in the detail coefficients at a particular decomposition level are compared to the differences in spectra in a particular frequency range. these cases are presented in more detail below. wavelet-based audio features 83 fig. 9 detail coefficients given as mean values from the frames after applying (a) haar, (b) symlet 8, (c) coiflet 5 and (d) discrete meyer wavelets to segmented signals of non-faulty (blue) and faulty motors (red) up to level 4 in order to shed light from one more perspective, another example of a certain correlation of differences between non-faulty and faulty motors in the detail coefficients and spectra is shown in fig. 10. the processing is identical to the previously described one. daubechies 2 wavelet up to the decomposition level 8 is applied to the pre-processed signals of non-faulty and faulty motors. wavelet-based features consist of mean value and standard deviation of the absolute value of the detail coefficients from every frame. differences between the non-faulty and faulty motors are the most prominent in the detail coefficients from the decomposition level 1 up to level 4. also, there are some smaller differences present at level 5. similar results are found in the spectra of the analyzed signals, see fig. 9 (c). an exception is found in the region/coefficients d6, where a bigger difference exists in the spectra than in the detail coefficients. 84 đ. damnjanović, d. ćirić, z. perić fig. 10 detail coefficients after applying daubechies 2 wavelet to segmented signals (with taking coefficient absolute value) of non-faulty (blue) and faulty motors (red) up to level 8 of decomposition: (a) mean values, (b) standard deviation, (c) spectrum of full-length signals (the case with certain differences between non-faulty and faulty motors) it should be kept in mind that the motors used in the present research are the new ones coming out from the production line. in that regard, faulty motors make up the minority. moreover, only very few of those faulty motors have serious failures. the sound of such wavelet-based audio features 85 a motor is distinguishable from the non-faulty ones. however, in many other cases where the fault is a minor one, the sounds of non-faulty and faulty motors are perceptually similar to each other, and their objective characteristics are also similar. this is why making a distinction between non-faulty and faulty motors having only minor failures is a difficult task. such a case is presented in fig. 11. independently on whether the mean or standard deviation of the detail coefficients from the frames is applied to generate the wavelet-based feature, these features are similar for non-faulty and faulty motor, as shown in fig. 11 (a) and (b). this is valid for all used decomposition levels (up to level 8). spectra of these motors are also similar, although not entirely the same, see fig. 11 (c). as a consequence of the mentioned similarities, in cases like this one, the wavelet-based features will not provide a clear distinction between non-faulty and faulty motors. the measure feature difference is also calculated for two specific cases investigated in this section, and the results are summarized in table 1. the feature difference is significantly larger for the case 1 than for the case 2, which is in line with the noticed behavior of the wavelet-based features for these cases. for the case 1, the feature difference has larger values at the levels of decomposition from 1 to 4, confirming the above stated observation. table 1 feature difference calculated for two cases analyzed in this section (case 1 is related to fig. 10, while case 2 is related to fig. 11) decomposition level 1 2 3 4 5 6 7 8 feature difference (case 1) 0.39 0.34 0.42 0.83 0.26 0.18 0.23 0.24 feature difference (case 2) 0.12 0.042 0.1 0.027 0.068 0.051 0.025 0.001 5. conclusion the sound generated by a motor having a certain fault can be significantly changed from the sound generated by a non-faulty motor. the extent of difference depends on the fault, but also on the motor itself. the sounds of non-faulty and faulty motors can be compared from the perceptual point of view, but their objective characteristics such as spectra can be compared, too. an approach that can provide additional information is based on the extraction of some features from the signal (sound) and using these features as attributes describing the motor as a sound source and its condition. wavelet technique is one of the options to extract useful features when the sound signature analysis is applied for motor quality estimation. the decomposition of an audio signal into detail and approximation coefficients is the main task in this type of wavelet analysis. by using the adequate wavelet parameters, the differences in wavelet coefficients (representing the wavelet-based features) between non-faulty and faulty motors can become prominent. although differences between the motors might be seen in the spectra, too, the wavelet-based features provide a different insight into this topic. apart from the fact that wavelet filtering can emphasize these differences between motors, usage of the wavelet-based features is much more convenient for application of automated classification procedures based on machine/deep learning. 86 đ. damnjanović, d. ćirić, z. perić fig. 11 detail coefficients after applying daubechies 2 wavelet to segmented signals (with taking coefficient absolute value) of non-faulty (blue) and faulty motors (red) up to level 8 of decomposition: (a) mean values, (b) standard deviation, (c) spectrum of whole signals (the case without prominent differences between nonfaulty and faulty motors) regarding the wavelet parameters, it is interesting to note that several different wavelets provide similar results, although there are slightly different cases. for instance, the haar wavelet does not provide as good results as daubechies 2 wavelet for this wavelet-based audio features 87 particular application. the present research results show that a few wavelets stand out, including daubechies, symlet and coiflet. the waveform of the symlet wavelet is similar to that of the daubechies wavelet, so it is logical that they have a similar impact on the signal decomposition. one of the main observations of this research is that there is no single decomposition level leading to the largest differences between non-faulty and faulty motors. this is use-case dependent. in most cases, there is a correlation between the differences of the motor sound spectra in particular frequency ranges and differences in the wavelet-based features (detail coefficients). thus, the decomposition level can be chosen according to the frequency range where the largest differences between the compared dc motors occur. in this research, the most prominent differences exist in the upper part of the frequency range, and in the detail coefficients at the levels of decomposition from 1 to 4. only in rare cases, certain differences between non-faulty and faulty motors can be present in the detail coefficients at the decomposition levels higher than 4. the sounds of dc motors used in this research were recorded in the production hall of the motor manufacturer, as described above. future work will also include dc motor sounds recorded in an alternative environment (e.g., the one of different size and ambient conditions). also, the analysis will be extended to some other cases of correlation of results from different domains in addition to two extreme cases presented here with and without differences between non-faulty and faulty motors in both detail coefficients and spectra. acknowledgement: the work presented in this paper was supported by the ministry of education, science and technological development of the republic of serbia (the work of the author). this research was supported by the science fund of the republic of serbia, 6527104, ai-com-in-ai (the work of the co-authors). references [1] đ. damnjanović, d. ćirić, z. perić, analysis of dc motor sounds using wavelet-based features, in proceedings of the 6th international conference on electrical, electronic and computing engineering "(ic)etran 2019", srebrno jezero, serbia, june 3 6, 2019, pp. 17-22. [2] m. sifuzzaman, m.r. islam, m.z. ali, "application of wavelet transform and its advantages compared to fourier transform", journal of physical sciences, vol. 13, pp. 121-134, 2009. [3] r.j.e. merry, "wavelet theory and applications: a literature study", technische universiteit eindhoven, eindhoven, june 7, 2005. [4] b. ergen, "signal and image denoising using wavelet transform", chapter 21 in: advances in wavelet theory and their applications in engineering. physics and technology, in-tech (2012), pp. 495-515. [5] ð. m. damnjanović, d. g. ćirić, b. b. predić, "de-noising of a room impulse response by applying wavelets, acta acustica united with acustica", journal of the european acoustics association (eaa) international journal on acoustics, vol. 104, no. 3, pp. 452-463, may/june 2018. [6] g. kaushik, h.p. sinha, l. dewan, "biomedical signals analysis by dwt signal denoising with neural networks", journal of theoretical and applied information technology, vol. 62, no.1, pp. 184-198, 10th april 2014. [7] e. güzel, m. canyılmaz, m. türk, "application of wavelet based denoising techniques to remote sensing very low frequency signals", radio science, vol. 46, issue 2, pp. 1-9, april 2011. [8] damnjanović, d. ćirić, "usage of wavelet de-noising for estimation of room impulse response truncation time", in proceedings of 5th international conference on electrical, electronic and computing engineering "icetran 2018", pp. 565-570, palić, serbia, june 11-14, 2018. [9] g. tzanetakis, g. essl, p. cook, "audio analysis using the discrete wavelet transform", in proceedings of the wses international conference acoustics and music: theory and applications (amta 2001), pp. 318-323, skiathos, greece, january 2001. 88 đ. damnjanović, d. ćirić, z. perić [10] t. zhang, c.-c. jay kuo, "content-based audio classification and retrieval for audiovisual data parsing", chapter 3 in: audio feature analysis, springer, boston, ma, 2001. [11] a. glowacz, "diagnostics of direct current machine based on analysis of acoustic signals with the use of symlet wavelet transform and modified classifier based on words", eksploatacja i niezawodnosc – maintenance and reliability, vol. 16, no. 4, pp. 554-558, 2014. [12] m. daniels, "classification of percussive sounds using wavelet-based features", ph.d. dissertation, ccrma, stanford university, 2010. [13] c. da costa, m. kashiwagi, m. h. mathias, "rotor failure detection of induction motors by wavelet transform and fourier transform in non-stationary condition", case studies in mechanical systems and signal processing, vol. 1, pp. 15-26, elsevier, 2015. [14] m. zhao, q. chai, s. zhang, "a method of image feature extraction using wavelet transforms", in proceedings of the 5th international conference on intelligent computing, icic 2009, pp. 187-192, ulsan, south korea, september 16-19, 2009. [15] p. sharma, n. saraswat, "diagnosis of motor faults using sound signature analysis", international journal of innovative research in electrical, electronics, instrumentation and control engineering, vol. 3, issue 5, pp. 80-83, may 2015. [16] p. a. delgado-arredondo, d. morinigo-sotelo, r. a. osornio-rios, j. g. avina-cervantes, h. rostrogonzalez, r. de j. romero-troncoso, “methodology for fault detection in induction motors via sound and vibration signals”, mechanical systems and signal processing, vol. 83, pp. 568-589, january 2017. [17] a. glowacz, "dc motor fault analysis with the use of acoustic signals, coiflet wavelet transform, and k-nearest neighbor classifier", archives of acoustics, vol. 40, no. 3, pp. 321-327, 2015. [18] a. dineva, a. mosavi, m. gyimesi, i. vajda, n. nabipour, t. rabczuk, "fault diagnosis of rotating electrical machines using multi-label classification", applied sciences, vol. 9, pp. 1-18, november 2019. [19] a. a. silva, a. m. bazzi, s. gupta, "fault diagnosis in electric drives using machine learning approaches", in proceedings of the international electric machines & drives conference, pp. 722-726, chicago, il, usa, 12-15 may 2013. [20] s.-y. shao, w.-j. sun, r.-q. yan, p. wang, r. x gao, "a deep learning approach for fault diagnosis of induction motors in manufacturing", chinese journal of mechanical engineering, vol. 30, pp. 13471356, october 2017. [21] m. z. ali, m. n. s. k. shabbir, x. liang, y. zhang, t. hu, "machine learning-based fault diagnosis for singleand multi-faults in induction motors using measured stator currents and vibration signals", ieee transactions on industry applications, vol. 55, issue 3, pp. 2378-2391, january 2019. [22] r. s. s. kumari, d. sugumar, "wavelet based feature vector formation for audio signal classification", in proceedings of the icacc2007 int. conference, madurai, india, pp. 752-755, 9-10 feb, 2007. [23] m. c. sezgin, b. gunsel, g. k. kurt, "perceptual audio features for emotion detection", eurasip journal on audio, speech, and music processing, no. 16, pp. 1-21, 2012. [24] y. shi, g. wang, j. niu, q. zhang, m. cai, b. sun, d. wang, m. xue, x. d. zhang, "classification of sputum sounds using artificial neural network and wavelet transform", international journal of biological sciences, vol. 14, issue 8, pp. 938-945, 2018. [25] a. hashemi, h. arabalibiek, k. agin, "classification of wheeze sounds using wavelets and neural networks", in proceedings of the international conference on biomedical engineering and technology, vol. 11, pp. 127-131, singapore, 2011. [26] p. de chazal, b. g. celler and r. b. reilly, "using wavelet coefficients for the classification of the electrocardiogram", in proceedings of the 22nd annual international conference of the ieee engineering in medicine and biology society, pp. 64-67, chicago, il, usa, 23-28 july 2000. [27] a. kandaswamya, c. sathish kumarb, rm. pl. ramanathanc, s. jayaramana, n. malmurugana, "neural classification of lung sounds using wavelet coefficients", computers in biology and medicine, pp. 523537, vol. 34, issue 6, september 2004. 12321 facta universitatis series: electronics and energetics vol. 37, no 2, june 2024, pp. 355 368 https://doi.org/10.2298/fuee2402355h © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper experimental and numerical analysis of the influence of the contact resistance in a high-power fuse on its time-current characteristic* ivan hadzhiev, dian malamov, nikolay kolev, iosko balabozov, ivan yatchev technical university of sofia plovdiv branch, university of plovdiv paisii hilendarski, technical university of sofia, bulgaria orcid ids: ivan hadzhiev https://orcid.org/0000-0003-2713-5186 dian malamov https://orcid.org/0000-0003-0782-497x nikolay kolev n/a iosko balabozov https://orcid.org/0000-0003-2011-6089 ivan yatchev https://orcid.org/0000-0001-6602-5102 abstract. this paper presents a study of thermal processes and time-current characteristics of a high-power low-voltage fuse at normal and increased contact resistance. experimental and numerical studies have been performed. the experimental studies have been carried out by means of an experimental setup, especially developed for the purpose. temperature measurement has been realised both by a contact thermometer and by a thermovision camera. the finite element method has been used in the numerical study. a computer model of the fuse has been developed in the software product comsol. the model reads the thermal processes in the fuse, as well as the heat transfer to the environment, which occurs by radiation and convection. results about the influence of the contact resistance on the fuse heating and its time-current characteristic have been obtained. the obtained experimental and numerical results have been compared. key words: contact resistance, high-power fuse, limiting current, thermal processes, time-current characteristic 1. introduction fusible fuses are among the most widely used protective electrical devices in industry and at home. therefore, they have been subjected to a number of experimental and numerical studies. paper [2] presents a study of the influence, exerted by the current higher harmonics on received november 27, 2023; revised january 31, 2024; accepted february 01, 2024 corresponding author: ivan hadzhiev technical university of sofia, plovdiv branch, faculty of electronics and automation, tsanko dyustabanov 25, 4000 plovdiv, bulgaria e-mail: hadzhiev_tu@abv.bg *an earlier version of this paper was presented at the 16th international conference on applied electromagnetics (пес 2023), august 28 -30, 2023, in niš, serbia [1]. https://orcid.org/0000-0003-2713-5186 https://orcid.org/0000-0003-0782-497x https://orcid.org/0000-0003-2011-6089 https://orcid.org/0000-0001-6602-5102 mailto:hadzhiev_tu@abv.bg 356 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev the power losses. paper [3] goes further and discusses the influence of the harmonics and their frequency on the melting time of the fuse link, based on a model, developed in ansys. the effect of the current and the ambient temperature on the temperature distribution in a highpower fuse is described in [4]. a 3d model of a low voltage fusible fuse, developed by the finite element method, is presented in [5]. this model needs upgrading because of the deviations between the numerical and experimental results. paper [6] suggests a new simulation model of fuses with high-breaking capacity and this model also needs improvement, to allow for taking into account the fuse temperature and the slow speed of the melting processes. the characteristics i2t of fuses for protecting semiconductors are considered in paper [7], and paper [8] studies the temperature distribution in a fast fuse for semiconductor protection by means of a developed model. carried out again by means of purposefully developed computer models, a study of the thermal field in fuses for domestic application is described in [9]. experimental and numerical studies of thermal processes in a high-power low-voltage fuse have been reported in [10]÷[14]. the numerical studies have been carried out by means of the finite element method and with the help of a developed by the authors computer model of the fuse in the software product comsol. numerical results, concerning the electrical and thermal fields of the fuse at steady-state mode have been obtained. in [10] the model has been verified by comparing with experimental results about the fuse heating, obtained with the help of a purposefully developed experimental setup, while in [11] a thermovision camera has been used to study the fuse heating. paper [12] presents numerical results, revealing the influence of the contact resistance on both the electric and the thermal field of the fuse at steady-state mode, and number [13] studies the influence of the crosssection of the connecting conductors in the fuse on its heating. in paper [14], the influence of external losses on the heating of the fuse with different lengths of connecting conductors is examined. such losses can be generated by switching devices, power distribution blocks [15], and other devices connected in the fuse circuit. experimental and numerical studies of the time-current characteristics of the fuse within the limiting current region have been presented in a previous work of the authors. the research on the high-power low-voltage fuse has continued and this paper presents a study of the influence of the contact resistances on the time-current characteristics of the fuse. the experimental studies were performed by an experimental setup, developed on the purpose, and the numerical studies were carried out by means of a 3d computer model synthesized in a transient mode in comsol. the paper gives: a description of the construction of the studied fuse, experimental results about the influence of the contact resistance on the time-current characteristic and heating of the fuse, a mathematical model for solving the coupled electrical-thermal problem in a transient mode, the synthesis of a 3d computer model of the fuse and numerical results about the influence of the contact resistance on the time-current characteristic and the thermal processes in the fuse. analysis was made and conclusions drawn up based on the obtained experimental and numerical results. 2. construction of the studied high-power low-voltage fuse the subject of the study is a high-power low-voltage fuse with rated current of in=50 a, rated voltage un=500 vac, short-circuit breaking capacity icu=120 ka and protective characteristic gg. this characteristic means that the fuse is a general purpose one and protects over the entire range from rated current to short-circuit breaking capacity. the photo of the studied fuse and its construction, developed in the comsol program, are shown in fig. 1. experimental and numerical analysis of the influence of the contact resistance in ... 357 the cartridge is made of steatite, the covering plates, which close the cartridge, are aluminum. the contact knives and the fusible link are made of copper and the metallurgic effect is used. the contact knives are silver plated. quartz sand is used as a fuse filler. the base and the connecting wires are made of copper. the insulation of the cables is polyvinyl chloride (pvc). a) photo of the studied fuse b) computer model (the cables not shown) fig. 1 construction of a high-power low-voltage fuse: 1, 2 – v-terminals; 3, 4 – base, on which the fuse is placed; 5, 6 – contact knives of the fuse; 7, 8 – covering plates, which close the cartridge; 9 – cartridge; 10 – fuse filler; 11 – fuse link; 12, 13 apparent contact areas sc of the contact connections between the contact knives and the base. 3. experimental study of the high-power low-voltage fuse 3.1. electric circuit diagram of the experimental setup fig. 2 shows the diagram of the electric circuit of the developed for the purpose of studying the fuse heating experimental setup. the fuse temperature was measured by a thermovision camera and a contact thermometer. the current load and the actuation time were measured by a digital oscilloscope. both the cross-sections and the lengths of the connecting cables were chosen in accordance with [16]. fig. 2 electric circuit diagram of the experimental setup: ат – autotransformer; lt – load transformer; v – voltmeter; k – contactor; mv – millivoltmeter; cp – current probe; do – digital oscilloscope; tv – thermovision camera; ct – contact thermometer 358 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev 3.2. experimental results about the fuse heating at normal and increased resistances at a rated current load experimental studies were carried out on the heating of the fuses in a transient mode until reaching steady-state thermal mode under the rated current load of the fuse of in=50 a. the fuse temperature was measured in two points: on the cartridge and on its contact knife. thirty (30) fuses were studied. results were obtained about their heating at normal and increased resistances. the contact resistances were measured for new bases and fuses, and the increased resistances were accomplished by increase in the contact resistances between the fuse knives and the terminals of the base. the increased contact resistances are realized by placing thin plates of high electrical resistivity material between the fuse contact knife and the fuse base terminal. the averaged value of the normal contact resistance is rnc=0.028 mω, and the averaged value of the uncreased contact resistance is ric=7.355 mω. figs. 3÷5 present part of the results, obtained by a thermovision camera in a transient mode at a coefficient of radiation for the cartridge ε=0.95 and for the knife contact of the fuse link ε=0.4 [17]. it can be seen that with normal contact resistance, the highest temperature recorded by the thermovision camera is on the cartridge in the area of the fuse link, and with increased contact resistances, the highest temperature is on the contact knife. a) normal contact resistances b) increased contact resistances fig. 3 thermovision fuse images at a time t=10 min and rated current of in=50 a a) normal contact resistances b) increased contact resistances fig. 4 thermovision fuse images at a time t=20 min and rated current of in=50 a experimental and numerical analysis of the influence of the contact resistance in ... 359 a) normal contact resistances b) increased contact resistances fig. 5 thermovision fuse images at time t=60 min and rated current of in=50 a fig. 6 presents the graphical dependencies of the cartridge temperature and the temperature of the contact knife in a transient mode at normal and increased contact resistances, obtained by the thermovision camera. from the graphs it can be seen that the steady-state thermal mode of the fuse is reached in about 1 hour. a) cartridge b) upper contact knife of the fuse fig. 6 graphs of the cartridge heating in transient mode at rated current load of in=50 a for normal and increased contact resistances, obtained by using the thermovision method 3.3. experimental results about the fuse heating at normal and increased resistances at a current load, higher than the rated current after reaching steady-state thermal mode of the fuse, the values of the electric current within the range of the limit current were set and the actuation time of the fuse and its temperature at the moment of actuation were examined. fig. 7 and fig. 8 present thermovision images at fuse loads higher than the rated current load. 360 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev a) normal contact resistances b) increased contact resistances fig. 7 thermovision fuse images at the moment of actuation at test current of i=80 a a) normal contact resistances b) increased contact resistances fig. 8 thermovision fuse images at the moment of actuation at test current of i=150 a fig. 9 illustrates the dependence of the cartridge temperature, measured by means of a thermovision camera, on the test current both at normal and increased contact resistances. it can be seen that as the contact resistance increases, the fuse cartridge temperature also increases. a) normal contact resistances b) increased contact resistances fig. 9 cartridge heating at test current loads higher than the rated current experimental and numerical analysis of the influence of the contact resistance in ... 361 the time-current characteristics of the studied high-power low-voltage fuses at normal and increased contact resistances are shown in fig. 10. at values of the electric current close to the limit current, as the contact resistance increases, losses in the contact connections increase, which leads to faster heating of the fuse link and hence to faster activation of the fuse. fig. 10 time-current characteristics at normal and increased contact resistances 4. numerical study of the high-power low-voltage fuse 4.1. mathematical model in order to build an adequate model, coupled electric field thermal field problem has to be solved [18]. 2 0 , ( ) , ( ), ,v v t q t = = − =   =   2 e j e e (1) where: v electric scalar potential; e vector of the electric field intensity; j current density vector; q heating power density; σ electrical conductivity, which is equal to: o 1 ( ) [1 ( )] , o t t t  =  +   − (2) where: ρо is the electrical resistivity at temperature to; t is the temperature of a volume of the conductive element; α is the thermal coefficient of the electrical resistivity. this expression defines the specific surface losses in the contact connections: s , c p =  2 e (3) where σs is the specific surface conductivity per unit area, defined by: s 1 , c c r s  = (4) where: rc is an experimentally obtained value of the contact resistance; sc is the apparent contact area according to fig. 1. the values of the apparent contact areas for the contact knives are sc12=sc13=112 mm2. 362 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev in order to solve the electric problem, the following boundary conditions are used: ▪ electric current i is set to the cross-section of the high-power fuse incoming conductor; ▪ electric potential of v=0 v is set to the cross-section of the high-power fuse outgoing conductor; ▪ the following boundary condition is imposed on the surface of the current-carrying elements: 0. =n j (5) after the electric problem is solved, the power losses in the conductive elements of the high-power fuse, conductors and contact connections are obtained and used as heat sources for solving the thermal field problem. in order to obtain the distribution of the thermal field in the high-power fuse, the thermal problem needs to be solved. the following equation describes it: .( ) t c t q t    =   +  (6) where: λ is the thermal conductivity; c is the specific heat; γ is the material volume density; t is the temperature in the considered point of the fuse; t is the time; q is the heating power density. the thermal problem is solved at the following boundary conditions: ▪ heat transfer from the cartridge of the fuse toward the environment by convection and radiation: 4 4 ( ) , ( ) , s samb amb t t h t t k t t n n   −  =  −   =    −               (7) where: h is a coefficient of convection, defined by the criterion of nusselt in the program comsol; k is the constant of stephan boltzmann; ε is the emissivity; ts is the temperature of the outer surface of the fuse; tamb is the ambient temperature. 4.2. finite element analysis the numerical studies were conducted with the help of a developed 3d computer model in comsol [19]. the coupled problem electrtic field thermal field in transient mode was solved. the finite element method was used to analyze the model and the resultant mesh is given in fig. 11. the mesh consists of 548678 tetrahedral elements. an "extremely fine" mesh with a minimum element size of 0.225 mm was used. in areas with a large field gradient, the mesh is denser, and in areas with a small field gradient, the mesh is coarser. fig. 11 finite elements mesh experimental and numerical analysis of the influence of the contact resistance in ... 363 4.3. numerical results about the fuse heating at normal and increased contact resistances at rated current load the studies of the fuse heating were performed in a transient mode at different current loads and both with normal contact resistances rnc=0.028 mω and at increased contact resistances ric=7.355 mω. results were obtained about the influence of the contact resistance on the fuse heating, accordingly. part of them is shown in fig. 12÷17. a) normal contact resistances b) increased contact resistances fig. 12 distribution of the thermal field (ос) in fuse link at time t=10 min and rated current of in=50 a a) normal contact resistances b) increased contact resistances fig. 13 distribution of the thermal field (ос) in fuse link at time t=20 min and rated current of in=50 a a) normal contact resistances b) increased contact resistances fig. 14 distribution of the thermal field (ос) in fuse link at time t=60 min and rated current of in=50 a a) normal contact resistances b) increased contact resistances fig. 15 distribution of the thermal field (ос) on the surface and on the base of the fuse at time t=10 min and rated current of in=50 a 364 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev a) normal contact resistances b) increased contact resistances fig. 16 distribution of the thermal field (ос) on the surface and on the base of the fuse at time t=20 min and rated current of in=50 a a) normal contact resistances b) increased contact resistances fig. 17 distribution of the thermal field (ос) on the surface and on the base of the fuse at time t=60 min and rated current of in=50 a fig. 18 and fig. 19 present comparisons between the obtained experimental and numerical results for a transient mode and normal or increased contact resistances at a rated current load of in=50 a. a) normal contact resistances b) increased contact resistances fig. 18 comparison of the cartridge temperature in transient mode, obtained by the numerical model, the contact thermometer and the thermovision camera experimental and numerical analysis of the influence of the contact resistance in ... 365 a) normal contact resistances b) increased contact resistances fig. 19 comparison of the fuse contact knife temperature in transient mode, obtained by the numerical model, the contact thermometer and the thermovision camera 4.4. numerical results about the fuse heating at normal and increased contact resistances and current load higher than the rated current studies on the fuse heating in a transient mode at current loads with values around the limit current were performed by means of a computer model. the transient thermal mode was modeled after reaching steady-state thermal mode at a rated current load. studies were also conducted at normal contact resistances rnc=0.028 mω and increased contact resistances ric=7.355 mω between the fuse contact knives and the fuse base. numerical results about the influence of the contact resistance on the fuse heating were obtained. the conducted numerical studies concern the moment before the activation of the fuse, because the model does not reflect the processes of phase transition of the fuse link material from a solid to a liquid state. part of these results is shown in fig. 20÷23. a) normal contact resistances b) increased contact resistances fig. 20 distribution of the thermal field (ос) in the fuse link at time t=1 min and test current of i=75 a a) normal contact resistances b) increased contact resistances fig. 21 distribution of the thermal field (ос) in the fuse link at time t=10 min and test current of i=75 a 366 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev a) normal contact resistances b) increased contact resistances fig. 22 distribution of the thermal field (ос) on the surface and on the base of the fuse at time t=1 min and test current of in=75 a a) normal contact resistances b) increased contact resistances fig. 23 distribution of the thermal field (ос) on the surface and on the base of the fuse at time t=10 min and test current of i=75 a fig. 24 makes comparisons between the obtained experimental and numerical results about the transient thermal mode at normal contact resistances and a test current of i=75 a. a) cartridge b) contact knife fig. 24 comparison between the fuse temperature in transient mode at normal contact resistances and test current i=75 a, obtained by the numerical model, the contact thermometer, and the thermovision camera, correspondingly experimental and numerical analysis of the influence of the contact resistance in ... 367 fig. 25 shows the change in the maximum value of the fuse link temperature in a transient mode, obtained by means of the computer model before the moment of fuse activation and at test current of i=75 a. fig. 25 change in the maximum link temperature in transient thermal mode before the fuse activation at test current of i=75 a and normal contact resistances 5. conclusion the cartridge temperature, measured by a contact thermometer and obtained from a thermovision image differs by up to 10 %. the main factors, contributing to this difference, are the surface emissivity, as well as unidentified systematic influence of external infrared radiation. this error can be corrected by a correction factor. this confirms the applicability of the thermal imaging method for remote diagnosis and assessment of the state of fusible fuses during their operation. the increased contact resistance of the knife contacts significantly influences on the limiting current of the studied fuses, including at overload currents of up to about 2.6 times higher than the rated current. above these currents the influence of the increased contact resistance on the time for activation is insignificant. this can be explained by the fact that in this case, the thermal processes in the fuse, due to its big thermal capacity, begin to acquire an adiabatic character. this is also confirmed by the character of the cartridge temperature change due to the current, at fuse loading with currents, higher than the rated current. at normal contact resistances, the results, obtained from the computer model up to the moment of fuse activation, differ from the experimental results, obtained by the contact thermometer, by up to 10% in transient mode and by up to 6% at steady-state mode. the bigger difference in the transient mode is due to the lack of real data on the values of the specific heat capacity of the materials of the studied fuse. at increased contact resistances in the transient mode, the difference between the obtained numerical and experimental results is greater than that at normal contact resistances. this is due to the change (instability) of the increased contact resistance during the transient process in result of the higher heating of the contact connection. fig. 24a illustrates that the cartridge temperature, measured by a thermovision camera at the moment of fuse activation, quickly goes up. this is due to the non-simultaneous interruption of the narrowed sections of the fuse link, as a result of which the power losses increase significantly. the metallurgical effect has an additional influence on this process. the 368 i. hadzhiev, d. malamov, n. kolev, i. balabozov, i. yatchev computer model does not take into account these processes. it is a matter of a future work to further develop the computer model with the aim of modeling the thermal processes during the phase transition of the link material from a solid to a liquid state. references [1] i. hadzhiev, d. malamov, n. kolev, i. balabozov and i. yatchev, "study of the time-current characteristic of a high-power fuse in the limiting current region", in proceedings of the 16th international conference on applied electromagnetics пес 2023, august 28-30, 2023, niš, serbia, pp.1–4. [2] h. farahani and m. sabaghi, "analysis of current harmonic on power system fuses using ansys", indian journal of science and technology, vol. 5, no. 3, 2012. [3] r. han, t. wang, q. wang, y. zheng and l. dong, "analysis for fusing time of fuse under effect of harmonics based on fe method", in proceedings of the 2016 china international conference on electricity distribution (ciced 2016), xi’an, china, 2016, pp. 1–5. [4] a. pleșca, "thermal analysis of the fuse with unequal links using finite element method", international journal of electrical, computer, energetic, electronic and communication engineering, vol. 6, no. 12, 2012. [5] m. sarajlić, p. kitak, m. hribernik and j. pihler, "comparison between the measured and model-calculated temperature of the lv melting fuse", wseas transactions on circuits and systems, vol. 18, 2019, pp. 63–66. [6] p. köllensperger, s. böhm, m. hilscher, p. domanits and v. seefeld, "design and verification of a simulation model for fuses with high-breaking capacity", in proceedings of the 2009 ieee energy conversion congress and exposition, san jose, usa, 2009, pp. 1261–1266. [7] y. ishikawa, k. hirose, m. asayama, y. yamano and s. kobayashi, "dependence of current interruption performance on the element patterns of etched fuses", in proceedings of the 2007 8th international conference on electric fuses and their applications, ceyrat, france, 2007, pp. 51–56. [8] a. pleșca, "a complete 3d thermal model for fast fuses", in proceedings of the 2007 8th international conference on electric fuses and their applications, ceyrat, france, 2007, pp. 79–85. [9] r. tzeneva, y. slavtchev and v. mateev, "modeling of thermal field of electrical fuses for domestic application", in proceeding of technical university of sofia, vol. 64, no. 4, 2014, pp. 105–112. [10] i. hadzhiev, d. malamov, i. balabozov and i. yatchev, "experimental and numerical analysis of the thermal field in a high power low voltage fuse", in proceedings of the 16th conference on electrical machines, drives and power systems (elma), varna, bulgaria, 2019, pp.1–5. [11] i. hadzhiev, d. malamov, n. kolev, i. balabozov and i. yatchev, "thermal diagnostics of a high power fuse with thermovision camera", in proceedings of the international conference on electrical, computer, communications and mechatronics engineering (iceccme), male, maldives, 2022, pp.1–4. [12] i. hadzhiev, d. malamov, i. balabozov and i. yatchev, "analysis of the influence of some factors on the electric field and thermal field of a high power low voltage fuse", in proceedings of the 14th international conference on applied electromagnetics пес 2019, niš, serbia, pp. 1–4. [13] i. hadzhiev, "influence of the cables on the heating of a high power low voltage fuse", youth forums "science, technology, innovation, business 2020", plovdiv, bulgaria, pp. 173–176. [14] i. hadzhiev, d. malamov, i. balabozov, i. bayrev and i. yatchev, "numerical analysis of the influence of external losses on the heating of a high power fuse", 2023 international aegean conference on electrical machines and power electronics and 2023 international conference on optimization of electrical and electronic equipment, acemp-optim 2023, istanbul, turkey, pp. 1-8. [15] i. hadzhiev, d. malamov, i. balabozov and i. yatchev, "numerical analysis and experimental study of the thermal field in a power distribution block", 19th international symposium on electromagnetic fields in mechatronics, electrical and electronic engineering, isef 2019, nancy, france, pp. 1-2. [16] en 60269-1:2007 – low-voltage fuses – part 1: general requirements. [17] j. h. lienhard iv and j. h. lienhard v, a heat transfer textbook 3th edition, phlogiston press, 2004. [18] i. yatchev and i. marinova, numerical methods and modeling of circuits and fields part i, sofia, 2011, (in bulgarian). [19] comsol multiphysics 5.3 user’s guide, comsol inc., 2018. instruction facta universitatis series: electronics and energetics vol. 28, no 2, june 2015, pp. 193 203 doi: 10.2298/fuee1502193v the current status of power semiconductors  jan vobecký abb switzerland ltd. semiconductors, lenzburg, switzerland abstract. trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like mosfet, igbt, igct and pct. silicon carbide (sic) and gallium nitride (gan) are striving to take over that of the silicon. the most relevant sic device is the mps (jbs) diode, followed by mosfet and jfet. gan devices are represented by lateral hemt. while the long term reliability of silicon devices is well trusted, the sic mosfets and gan hemts are struggling to achieve a similar confidence. two order higher cost of sic equivalent functional performance at device level limits their application to specific cases, but their number is growing. next five years will therefore see the coexistence of these technologies. silicon will continue to occupy most of applications and dominate the high-power sector. the wide bandgap devices will expand mainly in the 600 1200 v range and dominate the research regardless of the voltage class. key words: power devices, silicon, silicon carbide, gallium nitride, thyristor, transistor. 1. introduction there is no doubt that power semiconductor devices play an important role in the development of modern society. they are the key components of an ever increasing number of applications which process the electrical power ranging from units of watts to gigawatts with modulation frequency of hertz to gigahertz. after sixty five years of development we reached the stage where different semiconductor materials compete for their use. silicon is defending its dominance by ongoing improvements in ratings (up to 10 ka), cost reduction (using up to 12” wafers) and circuit topologies. wide bandgap semiconductors like sic and gan strive to profit from their much better electrical strength and thermal conductivity in order to compensate for their much higher cost. old favourite arguments are the profit at a system level due to a higher operation frequency and lower equipment volume. typical arguments against the wide bandgap devices are missing experience with their gate dielectric reliability, about two orders higher cost and low current ratings (≤ 50 a). at the moment, ≈ 1 2 $/a of output current of a 1200 v/100 a sic inverter against ≈ 0.02 $/a for that of si can be compensated only in few cases. this is received january 13, 2015 corresponding author: jan vobecký, abb switzerland, ltd. semiconductors, fabrikstrasse 3, ch-5600, lenzburg, switzerland (e-mail: jan.vobecky@ch.abb.com) 194 j. vobecký when several superior features are fulfilled at the same time, like very high frequency (high power density), the highest possible conversion efficiency and the existence of low loss body diode (solar inverters, ups). the rest is in principal not acceptable for customers due to the high prices. these facts motivate researchers, designers and managers to change this situation. in the following paragraphs a short summary is given on the current status and possible future trends in power devices. for this purpose a classical sorting of components into groups according to electrical power is used as shown in fig. 1. 2. mosfet since about forty five years has been the silicon mosfet the power device of choice for breakdown voltages below 1000 v. for discrete parts, this is (1) thanks to the invention of the vertical double-diffused mosfet structure (vdmos) in favor of simple processing [1], (2) trench vdmos with higher cell density bringing lower conduction losses, and (3) charge compensation principle (super-junction) for low drift layer resistance breaking the original silicon limit of specific on-state resistance vs. breakdown voltage [2]. superjunction dmostrench dmosvertical dmos n+ substrate nepi ppn+ n+ p+ p+ g s s d n+ substrate nepi n+ n+ p+ p+ g s s d n+ substrate nepi n+ p+ p+ gs s d n+ fig. 2 vertical double-diffused mosfet design concepts conversion frequency [hz] 104103102101 108 106 104 102 igct igbt mosfet mw gw 1010 106 kw pct conversion power [w] fig. 1 power semiconductor devices pct = phase controlled thyristor, igct = integrated gate commutated thyristor, igbt = integrated gate bipolar transistor, mosfet = metal oxide semiconductor field effect transistor the current status of power semiconductor devices 195 the invention of lateral dmos (ldmos) and reduced surface field (resurf) [3] concepts have allowed the integration with bipolar and cmos devices into the bipolar cmos dmos (bcd) [4], smart power [5] and other platforms. from the application viewpoint, the existence of internal body diode makes the power mosfet concept very practical. superjunction ldmosresurf ldmosldmos p-well p p+ p n n d n+ gs n n p p p substrate n+ compens. layersresurf layer p-well p+ d n+ gs n p substrate n+ p-well p+ d n+ gs n p substrate n+ n-drift layer fig. 3 lateral double-diffused mosfet design concepts since about 2010, the silicon mosfet is facing competition from the sic mosfet. because of the low inversion channel mobility leading to a high channel resistance, the sic mosfets are typically available from breakdown voltage of 900 v. their specific on-state resistance ron_sp is claimed to approach the theoretical value for the sic 1-d unipolar device starting from the breakdown voltages of 3.3 kv [6]. for 900 v voltage class they outperform the best in class silicon device, which is for example the latest generation of coolmos [7]. while ron_sp ≈ 10 mω.cm 2 for the 650 v superjunction mosfet, it is ron_sp ≈ 2.3 mω.cm 2 for the next generation 900 and 1200 v sic mosfets. by factor of five lower ron_sp of the sic switches is nowadays a typical benchmarking figure. in addition, the sic devices offer significantly lower temperature dependence of ron_sp and very low charge of output capacitance qoss, while the silicon mosfets go in the opposite direction due to the reduction of a cell pitch. in specific applications, this could be a valid argument for compensation of a much higher price for the sic die by making profit at the system level, especially in the range 900 – 1200 v, which is free of competition [7]. but the producers of sic devices like cree are aiming much higher. they offer their mosfets up to 15 kv and demonstrate bipolar devices up to 27 kv. they are seeking new applications to oust the producers of silicon devices from their traditional markets. typical problems, like high price, missing experience with reliability (e.g. gate oxide and vth stability), and low current ratings, are still to be overcome. another competition for the 650 v superjunction mosfet in the future is the gan hemt [7]. to be cost competitive, the mainstream hemt is produced by epitaxial growth on a silicon wafer. consequently, it is (1) a lateral device, (2) it has a high defect density at the epitaxial layer, which allows us to apply only a much lower dc link voltage compared to the breakdown voltage, and (3) it has a relatively low thermal conductivity and capacity. the attractiveness of this concept lies in very low switching and on-state losses. however, the latter grows much more with increasing temperature than that of the sic mosfet. to overcome the inherent limitations of the lateral gan devices, the arpa-e switches program has been launched in 2014 [8]. the goal is to develop a 1200 v / 100 a single die vertical gan switch, which would have the potential to achieve the target cost of 0.1 $/a. this 196 j. vobecký value is claimed to be at cost parity with the silicon switch. however, one should treat it with caution, because it is deduced from the distributor prices. the current cost of a typical silicon foundry is at least five times lower and it can drop further with increasing the size of the starting silicon wafer towards 300 mm. nevertheless, such ambitious programs are needed to boost the gan technology. benefiting from cmos technology advancements, the unipolar transistor has become the most developed power device technology. there is no reason for being it otherwise in the future. in addition to the classical planar and trench gate architectures mentioned above, there has already been demonstrated nanoscale device concepts, e.g. finfet 3d approach on gan substrate [9], gate all around (gaa) fet concept [10], etc. moreover, there is not only silicon, sic and gan. since recently, diamond substrates are available with p-type boron doped and n-type phosphorus doped epitaxial layers. possibilities for an attractive research are further growing. 3. igbt at the beginning of 1980s´, the on-state resistance of silicon unipolar devices has been found too high above the breakdown voltage of 600 v. this stimulated the invention of a mos-controlled power device with a carrier injection from the side opposite to that of the mos control. the original designation power mosfet with an anode region [11], the insulated gate rectifier (igr) [12] or conductivity modulated fet (comfet) [13] unified later in the term insulated gate bipolar transistor (igbt). nowadays, the igbt is the device of choice for the voltage classes ranging from 650 v to 6.5 kv. the main reasons are (1) the superior cost relative to other technologies, (2) the process-adjustable position at the trade-off curve between the on-state (vce sat) and switching losses eoff, (3) high current ratings of power modules in the range of switching frequencies relevant for the most of kw, mw, and up to 1 gw applications, (4) possibility to integrate the free-wheeling diode (fwd) at the same chip (rc-igbt, bigt, rcdc) or to optimize the fwd independent of the igbt, (5) short circuit withstanding capability, (6) low temperature dependence of the on-state losses. (1) the production of igbt chips requires a similar technology as that of the mosfet. one more process is the anode implantation at the backside. the field-stop (softpunch through) n-type buffer layer of the state-of-the-art igbts can be for the voltage classes of ≥ 2.5 kv pre-diffused already at the starting silicon. only for the low voltage igbts (≤ 1700 v), a more demanding thin wafer technology is needed. in this case, the wafer is usually thinned by grinding and spin etching after completion of the mos part and then implanted for the n-type buffer and p-type anode. the record low wafer thickness at 100 µm for 1200 v class has been achieved, for example using the thin proton implanted buffer layer instead of the thicker pre-diffused one [14]. there are also further processing options for the thin wafer processing. (2) the possibility to adjust the buffer and anode doping profiles at the same time provides a great flexibility in controlling the bipolar gain of the igbt. this reflects at the position at the trade-off curve between the vce sat and eoff, at the magnitude of leakage current (tjmax), short circuit withstanding capability, etc. the devices with low eoff (higher vce sat) can be operated at higher frequencies and alternatively with the sic the current status of power semiconductor devices 197 fwds. the devices with low vce sat (higher eoff) are preferred in the low-frequency applications, like for example in the multilevel converters for energy transmission and distribution. again, the adjustment of buffer and anode doping is more demanding at the low voltage igbts, because it can be efficiently processed only after the wafer thinning with finished mos part including the passivation of junction termination. for fast igbts the limited temperature for the activation of p-type anode using a classical furnace is not a problem. for the igbts with low vce sat, the laser annealing technology is available, which exposes only a thin anode surface layer into the melting regime for the limited period of time, typically between 100 and 200 ns, while the cathode stays at a safely low temperature [15]. nenhancement ndrift pwell nbuffer pcollector emitter (cathode) collector (anode) enhanced classical pwell depth log carrier concentration ndrift nenhancement layer log doping concentration p-well depth fig. 4 plasma enhancement at cathode side of the state-of-the-art igbt (3) the original invention of the igbt concept with the injection of holes from the anode side significantly lowered the vce sat and increased power density. the enhancement of the electron-hole plasma at the cathode side for further reduction of the on-state losses of igbt modules belongs to the achievement of the last decade. the planar and trench soft punch-through (field-stop) igbts have developed into the enhanced trench [16] and enhanced planar igbts [17] with sophisticated shaping of the on-state plasma (see fig.4). the enhanced trench igbt represents the most important design concept for the two chip, i.e. igbt and diode, solution. for example, it moved recently the maximal ratings of the 6.5 kv igbt module to 1 ka [18]. in addition, the power density of the low voltage igbt technology is expected to grow. by further reduction of the cell pitch, the maximal operating temperature of 1700 v modules is expected to achieve tjmax = 200 °c around the year 2017 [7]. igbt + rc igbt >>> bigtenhanced planar igbt enhanced trench igbt active trench nenhancement ndrift nsource pwellnenhancement ndrift nsource pwell nbuffer pcollector (anode) metal pcollector (anode) nbuffer metal anode anode anode segment n+-short cathode cathode igbt rc igbt bigt rc-igbtpilot-igbt mos-cell cathode fig. 5 state-of-the-art igbt design concepts 198 j. vobecký (4) another way of increasing the power density is the reverse conducting rc-igbt concept, where both the igbt and fwd are integrated at the same chip. the consequence of the fact that the igbt and fwd share the same silicon is a bigger and more uniform current and thermal load of the chip as well. consequently, the rcigbt chip is exposed to a much lower temperature swings (∆t) during continuous operation, which increases the load cycling capability. in addition, the anode shorts, which form the cathode of the fwd, provide a softer switching compared to the two chip solution. there are two difficulties with the rc-igbt, namely (a) the snapback of forward i-v characteristics of the rc-igbt and (b) the difficulty to lower the reverse recovery losses of the fwd diode erec without worsening the igbt parameters. (a) to eliminate the snapback, a sophisticated integration of the n-type shorts into the p-type anode evolved into the bi-mode insulated gate transistor bigt [19, 20]. the pilot part of the anode, which is free of the n-type shorts, turns-on like the normal igbt without the snapback. the rest of the device, which is the rc-igbt with combined mos-like and igbt-like structures, is active only after the pilot part is turned on. the rc part has therefore the n-type shorting pattern optimized for the fwd operation, igbt turn-off and the required area ratio between the fwd and igbt. (b) at the planar rc-igbt design, the erec of the fwd can be partly minimized by a local lifetime control and partly by a special gating concept. in the trench design, the special gating is claimed to be sufficient to control the diode anode injection efficiency in order to reduce the stored charge prior to turn-off [21]. one may decide on their own, whether the better cycling capability is worth of the effort with the special gating in comparison with the easier two chip concept with less uniform temperature utilization. (5) the short circuit withstanding capability is given by the shape of the i-v curves ic = f(vce), which saturate in the saturation regime of the mosfet. this means, that the igbt, which inherited this feature after the mosfet, can limit a short circuit current as long as it survives thermally. this is typically within the period of 10 µs or less during which there has to be the igbt turned-off. the short circuit turnoff capability is a clear advantage over the thyristor based devices discussed below, which lack this feature. as they are subjected to the latch-up during turn-on and in the on-state, a protective fuses or di/dt chokes (see the choke „l‟ in fig.6a) need to be added into the application circuits, which make them more bulky and complex. a) cl l ccl r fwdigct b) vdc vdc fwdigct fwdigct fwdigbt fwdigbt fwdigbt fig. 6 typical inverters with igct (a) and igbt (b). the current status of power semiconductor devices 199 (6) the superior low temperature dependence of the on-state losses in the wide range of operating temperatures of the igbt is given by the unique combination of bipolar and mos structures. the strong degradation of the electron mobility with increasing phonon scattering (lattice temperature) µn = f(t) makes the silicon mosfet the most temperature sensitive device from all relevant power devices [7]. the increase of intrinsic concentration with growing temperature ni = f(t) is responsible for the unwanted negative temperature coefficient of the on-state voltage drop in bipolar devices. in the igbt, the strong negative temperature coefficient of µn is partly compensated by the positive one of the ni. this feature is given rather by coincidence than by design. an experimental igbt processed at sic substrate [6] has been demonstrated with an ambition to penetrate into the silicon domain silicon. the trick to achieve it is based on offering the igbts with blocking voltage well above 15 kv (demonstrated vbr ≈ 24 kv), which silicon cannot achieve. in addition to other technical challenges, the low carrier lifetime in the sic substrate had to be increased from 2 to 10 µs using 15 hours thermal oxidation at 1300 °c prior to device processing. the question is, whether the designers of the existing high voltage applications appreciate such effort. for example, the voltage source converters (vsc) for very high voltage systems can use the modular multilevel converter topology, where a higher number of devices is needed [22]. these devices need to be switched close to the fundamental output frequency of 50 hz and have to be optimized for low conduction losses. the device of choice is then the silicon igbt, with blocking voltage (typically 4.5 kv) giving an optimal trade-off between electrical losses and system cost. 4. igct the exceptional feature of the integrated gate commutated thyristor is that it conducts like a thyristor (i.e. with a low vt) and blocks both dynamically and statically like a bipolar transistor [23]. this concept has been invented in the mid 1990´s by integrating the fast (i.e. low inductance) gate unit into the structure similar to his forerunner, the gate turn-off thyristor (gto) [24]. the special gate unit provides very fast switching from the thyristor on-state regime to that of the transistor with safe turn-off, i.e. without a secondary breakdown. the snubber circuit, necessary for the safe gto turn-off, is hereby eliminated. a) b) fig. 7 conventional (a) and corrugated p-base design of an igct (b). 200 j. vobecký the igct is nowadays the most powerful device with a turn-off capability. the reason for its lower occurrence compared to that of the igbt is its more bulky gate unit, the lack of the short-circuit capability, and therefore the necessity of having an overvoltage clamped di/dt choke to set the switching speed. in addition, the increasing power density of igbts described above pushes the igct out from its original applications. however, the power handling capability of the igct is growing further. it has increased the turn-off power density to 700 w/cm 2 [25] thanks to the corrugated pbase design [26] implemented at a four inch wafer (see fig.7). moreover, the integration with the fwd at the 150 mm wafer moved the maximal current handling capability of the rc-igct towards 10 ka [27]. having very low on-state losses, this device is particularly well suited for the modular multilevel converter technology with very high rated power, which are needed for the future hvdc energy transmission and large capacity energy storage systems [28]. recently, a new concept of the rc-igct has been introduced, namely the bi-mode gate commutated thyristor (bgct) [34]. this device features an interdigitated integration of diode and gct segments, which brings several improvements in ratings like increased power density and homogeneous thermal loading analogous to the bigt above, lower leakage current, softer reverse recovery of the fwd, etc. [35]. we will therefore continue to see these devices in very high power applications. 5. pct the three-terminal p-n-p-n device was introduced in 1956 [29] to be called later the silicon controlled rectifier (scr) and thyristor as well. to distinguish it from other existing thyristor types, we call it phase controlled thyristor (pct). as one of the first power semiconductor devices ever, the pct played a unique role in the development of semiconductors from the very beginning, as described in the ref. [30]. nowadays, the pct is not anymore a hot topic of research as it was sixty years ago. however, it constantly maintains a significant market share thanks to its low processing cost, the lowest on-state losses and the simplest handling from all switches. the pct can be found in the voltage classes ranging from few hundred volts up to 10 kv and from ten amperes up to several ka, when made from silicon. they are being used in various industrial applications, like motor control, induction heating, power quality, power supplies, etc. they play a very important role in the high-voltage direct current transmission systems (hvdc). as the hvdc represents the most advancing technology based on the pct, we discuss it briefly below. due to overall low system losses, large-area silicon pcts are being used in the line commutated converters (lcc) for long-distance and multi-gigawatt power transmission. as the length of these transmission lines can reach over 2,000 km, extreme demands are laid on the energy efficiency. this dictates the usage of the dc transmission line cables operating at ultra-high voltages (uhv). the most of uhvdc systems are installed and further planned in china. following the success of uhvdc lines operating with rated dc voltage of 800 kv and rated power up to 7 gw, china is investigating the possibility of increasing the voltage rating up to 1,100 kv for power transmission breaking the 10 gw limit [31, 32]. to satisfy the demands on the converter valve for so high power, the the current status of power semiconductor devices 201 current handling capability of pcts had to be increased. for this purpose, abb has developed the second generation of six inch pct platform with the voltage ratings at 6.7, 7.2 and 8.5 kv [33]. thanks to the lowered on-state voltage vt, the maximal rating current itmax is over 6 ka for voltage ratings of 6.7 kv and 7.2 kv pcts, and 5 ka for 8.5 kv ones. the variety of voltage classes enables the optimization of system cost vs. energy losses trade-off. there are also other relevant uhvdc projects, for which the pct with itmax < 2.5 ka provides a better trade-off between the system cost and energy losses. for this purpose, the pct with even much lower vt has been developed at four inch silicon [36]. this device has a typical on-state voltage drop vt = 1.55 v at it = 1.5 ka and t = 90°c for the forward and reverse blocking capability of 8.5 kv. there is no other device with such low on-state losses for the 8.5 kv blocking. this implies further loss reduction of the converter valve by more than 5%, hereby moving the csc concept to ever higher transmission efficiencies. this is important for the future of the uhvdc transmission systems based on the lcc with pcts (so-called hvdc classic). this is because they are being replaced by that of the selfcommutated vsc with igbts (hvdc light), which have a lower efficiency and can transmit lower power, but they offer other beneficial features like smaller footprint, reactive power control, cold start, no need for a solid ac network at both sides of the transmission line, etc. anode cathode gate amplifying gate shorts turn-on signal n-base time (s) fig. 8 electron concentration in the pct at turn-on phase (a). measured vt vs. it for the new 6” pct platform (b). 6. conclusions current trends in the design and technology of power semiconductor devices were discussed on the threshold of the year 2015. it has been stated that power electronics continues to utilize above all the silicon based devices, but the wide bandgap devices based on the gan and especially on the sic have assumed the importance as never before. the silicon mosfet dominates the low voltage sector, but in the future, the sic mosfet is expected to surpass above 650 v up to about 1200 v. the silicon igbt is 202 j. vobecký available from 650 v to 6.5 kv. it dominates between 900 and 1700 v. it is also important for higher voltage classes due to the industrial drives, traction (1.7 6.5 kv) and energy transmission and distribution (4.5 kv). the modular multilevel converters with igbts are hindering the penetration of the sic solutions into the low loss applications. the area of very high power is occupied by the igct and pct. the main drivers are the energy savings and the world‟s hunger for electricity. the pct occupies also the lower power areas, where a low cost and simplicity of handling is required. the wide bandgap devices can be found in the applications with a lower power, where their very high conversion efficiency, very high operational frequency and high power density can compensate for their much higher price. the development trends of high-power technologies will continue to secure the high power systems with exceptional performance, comfort, energy savings and the required environmental sustainability. references [1] h. sigg, g. vandelin, t. cauge and j. kocsis, "dmos transistor for microwave applications", ieee transactions on electron devices, vol. ed-19, pp. 45–53, 1972. [2] g. deboy, p. märz, j.-p. stengl, h. strack, j. tihanyi and h. weber, "a new generation of high voltage mosfets breaks th limit line of silicon", in proceedings of the international electron device meeting, 1998, pp. 683–685. [3] j. a. appels and h. m. j. vaes, "high voltage thin layer devices (resurf devices)", in proceedings of the international electron device meeting, 1979, pp. 238–241. [4] a. r. alvarez, r. m. roop, k. j. ray, g. r. gettermeyer, "lateral dmos transistor optimized for high voltage bimos applications", in proceedings of the international electron device meeting, 1983, pp. 420–423. [5] r. s. wrathall, d. tam, l. terry, s. p. robb, "integrated circuits for the control of high power", in proceedings of the international electron device meeting, 1983, pp. 408–411. [6] j. w. palmour, "silicon carbide power development for industrial market", in proceedings of the international electron device meeting, 2014, pp. 1.1.1–1.1.8. [7] r. rupp, t. laska, o. häberlen, m. treu, "application specific trade-offs for wbg, sic, gan and high end si power switch technologies", in proceedings of the international electron device meeting, 2014, pp. 2.3.1–2.3.4. [8] t. d. heidel, p. gradzki, b. a. hamilton, "power devices on bulk gallium nitride substrates: an overview of arpa-e`s switches program", in proceedings of the international electron device meeting, 2014, pp. 2.7.1–2.7.4. [9] k.-s. im, y.-w. jo, k.-w. kim, d.-s. kim, h.-s. kang, c.-h. won, r.-h. kim, s.-m. jeon, d.-h. son, y.-m. kwon, j.-h. lee, s. cristoloveanu, j.-h. lee, "first demonstration of heterojunction-free gan nanochannel finfets", in proceedings of the international symposium on power semiconductor devices & ics, 2013, pp. 415–418. [10] g. larrieu, x. l. han, "vertical nanowire array-based field effect transistors for ultimate scaling", nanoscale, vol.5, pp.2437–2441, 2013. [11] h. w. becke, and c. f. wheatley, "power mosfet with an anode region", u.s. patent 4,364,073, december 14, 1982. [12] b. j. baliga, m. s. adler, p. v. gray, r. p. love, n. zommer, "the insulated gate rectifier (igr): a new power switching device", in proceedings of the international electron device meeting, 1982, pp. 264–267. [13] a. m. goodman, j. p. russell, l. a. goddman, c. j. nuese, and j. m. neilson, "improved comfet with fast switching speed and high-current capability", in proceedings of the international electron device meeting, 1982, pp. 79–82. [14] j. vobecky, m. rahimo, a. kopta, s. linder, "exploring the silicon design limits of thin wafer igbt technology: the controlled punch through (cpt) igbt", in proceedings of the international symposium on power semiconductor devices & ics, 2008, pp. 76–79. the current status of power semiconductor devices 203 [15] m. rahimo, c. corvasce, j. vobecky, y. otani. k. huet, "thin-wafer silicon igbt with advanced laser annealing and sintering process", ieee electron device letters, vol. 33, pp. 1601–1603, nov. 2012. [16] h. takahsahi, h. haruguchi, h. hagino, and t. yamada, "carrier stored trench-gate bipolar transistor (cstbt) – a novel power device for high voltage application", in proceedings of the international symposium on power semiconductor devices & ics, 1996, paper 15.2. [17] m. rahimo, a. kopta, s. linder, "novel enhanced-planar igbt technology rated up to 6.5 kv for level losses and higher soa capability", in proceedings of the international symposium on power semiconductor devices & ics, 2006, pp. 33–36. [18] m. masaomi, m. tabata, t. hieda, h. muraoka, "7th generation igbt module for industrial applications", in proceedings pcim europe, 2014, pp. 34–38. [19] m. rahimo, a. kopta, u. schlapbach, j. vobecky, r. schnell, s. klaka, "the bi-mode insulated gate bipolar transistor (bigt) a potential technology for higher power applications", in proceedings of the international symposium on power semiconductor devices & ics, 2009, pp. 283–286. [20] l. storasta, m. rahimo, c. corvasce, a. kopta, "resolving design trade-offs with the bigt concept", in proceedings pcim europe, 2014, pp. 354–361. [21] d. werber, f. pfirsch, t. gutt, v. komarnitskyi, c. schaeffer, t. hunger, d. domes, "6.5 kv rcdc for increased power density in igbt modules", in proceedings of the international symposium on power semiconductor devices & ics, 2014, pp. 35–38. [22] a. kopta, "high voltage silicon based devices for energy efficient power distribution and consumption", in proceedings of the international electron device meeting, 2014, pp. 2.4.1–2.4.4. [23] s. klaka, m. frecker, h. grüning, "the integrated gate-commutated thyristor: a new high efficiency, high-power switch for series or snubberless operation", in proceedings pcim europe, 1997. [24] r. h. van ligten, d. navon, "base turn-off of p-n-p-n switches, ire wescon convention record", part 3 on electron devices, pp. 49 52, august 1960. [25] t. wikstrom. t. stiasny, m. rahimo, d, cottet and p. streit, "the corrugated p-base igct – a new benchmark for large area soa scaling", in proceedings of the international symposium on power semiconductor devices & ics, 2007, pp. 29–32. [26] n. lophitis, m. antoniou, f. udrea, i. nistor, m. t. rahimo, m. arnold, t. wikstrom, and j. vobecky, "gate commutated thyristor with voltage independent maximum controllable current", ieee electron device letters, vol. 34, pp. 954-956, 2013. [27] t. wikstrom. m. arnold, t. stiasny, c. waltisberg, h. ravener, m. rahimo, "the 150 mm rc-igct: a device for highest power requiremnts", in proceedings of the international symposium on power semiconductor devices & ics, 2014, pp. 91-94. [28] s. linder, "power electronics: the key enabler of a future with more than 20% wind and solar electricity", in proceedings of the international symposium on power semiconductor devices & ics, 2013, pp. 11-18. [29] j. l. moll, m. tanenbaum, j. m. goldey, p-n-p-n transistor switches, proceedings of the ire, vol.44, pp.1174–1182, 1956. [30] n. holonyak, "the silicon p-n-p-n switch and controlled rectifier (thyristor)", ieee transactions on power electronics, vol.16, pp.8–16, 2001. [31] r. montano, b. jacobson, d. wu, l. arevalo, corridors of power, abb review, special report: 60 years of hvdc, 2014. [32] j. cao, j. cai, "hvdc in china", 2013 hvdc and facts conference, palo alto, ca, usa, 2013. [33] j. vobecky, t. stiasny, v. botan, k. stiegler, u. meier, m. bellini, "new thyristor platform for uhvdc (> 1mv) transmission", in proceedings pcim europe, 2014. [34] u. verpulati, m. bellini, m. arnold, m. rahimo, t. stiasny, "the concept of bi-mode gate commutated thyristor, a new type of reverse conducting device", in proceedings of the international symposium on power semiconductor devices & ics, 2012, pp. 29–32. [35] u. verpulati, m. arnold, m. rahimo, j. vobecky, t. stiasny, n. lophitis, f. udrea, "an experimental demonstration of a 4.5 kv “bi-mode gate commutated thyristor (bgct)", in proceedings of the international symposium on power semiconductor devices & ics, 2015, accepted for publication. [36] j. vobecky, v. botan, k. stiegler, m. bellini, u. meier, "a novel ultra low loss four inch thyristor for uhvdc", in proceedings of the international symposium on power semiconductor devices & ics, 2015, accepted for publication. paper title (use style: paper title) facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 367 381 doi: 10.2298/fuee1603367j from intelligent web of things to social web of things nafaâ jabeur 1 , hedi haddad 2 1 dept. of computer science, german university of technology in oman, oman 2 dept. of computer science, dhofar university, oman abstract. numerous challenges, including limited resources, random mobility, and lack of standardized communication protocols, are currently preventing a myriad of heterogeneous devices to interact and provide web services within the context of the web of things (wot). we argue in this paper that these devices should be augmented with artificial intelligence techniques for an enhanced management of their resources and an easier construction of web applications integrating real world things (rwt). to this end, we present a new classification of the wot challenges and highlight the opportunities of embedding smartness into rwt. we also present our vision of intelligent wot by proposing a multiagent system-based architecture for intelligent web service composition. in addition, we discuss the shift of the wot toward a social wot (swot) and debate our ideas within two important scenarios, namely the intelligent vanet-wot and smart logistics. key words: internet of things, web of things, multiagent systems, web service composition, social web of things, smart logistics 1. introduction continuous technological advances are bringing communication and computing technologies from large to small and tiny scales. for instance, new range of small devices, including wireless sensor networks (wsns), are capable of acquiring and reporting data about a variety of spatial objects and events of interest, anytime and everywhere [2]. these devices are since there profiting from incessant progress in the fields of networking capabilities, mobile and pervasive computing, and miniaturization. they are not anymore being considered as simple data collecting devices. their capabilities are, indeed, being augmented with processing and intelligent mechanisms to assess on their own their current received august 30, 2015; received in revised form november 15, 2015 corresponding author: nafaâ jabeur dept. of computer science, german university of technology in oman gutech, p.o. box 1816, pc 130, muscat, oman (e-mail: nafaa.jabeur@gutech.edu.om) *an earlier version of this paper was presented at the international conference on recent advances in computer systems racs-2015, hail university, saudi arabia, 2015 [1]. 368 n. jabeur, h. haddad situations and make the right decision at the right time. a new era bridging cyber and physical worlds have then emerged with the vision to insert smartness everywhere. this era is particularly marked with the recent emergent fields of cyber physical systems [3] and internet of things. the internet of things (iot) could be defined as a global networking infrastructure that uses data capturing devises and communication resources to link virtual and physical objects [4]. it can, therefore, be perceived as an amalgamation of a variety of sensing, communication, and networking devices and systems in order to connect people and things with common interests. in this configuration, anybody can efficiently access the information of any object and any service, at any time and any place, regardless the heterogeneity of communication protocols and devices [5]. the web of things (wot) is a subset of the iot where web standards are used to seamlessly integrate and connect physical objects and information resources [6]. the emerging development of wot is expected to offer solutions in a wide variety of domains, including transportation management, energy monitoring, logistics and supply chain management, military and rescue scenarios, and healthcare applications. this is expected to be facilitated thanks to the increasing abundance of smart devices with web-enabled capabilities. the wot vision particularly aims to use web protocols and technologies to allow an easy building of web applications exploiting real world things (rwt). however, due to the heterogeneity of their hardware/software specifications and capabilities, the nonhomogeneity of their data representations and quality as well as their commonly nondeterministic mobility, rwt are facing serious problems to interoperate. these problems are more and more challenging because of the absence of widely accepted standards. with the continuous expansion of cyber and physical words toward each other as well as toward a social world, additional challenges concerning trust, privacy, and security are raising up. as it can be seen clearly, the challenges of the wot concern several levels and issues. we believe that autonomy, flexibility, and intelligence must be integrated to any approach addressing these challenges, and we argue that techniques from the artificial intelligence field would allow the creation of efficient candidate solutions. in this perspective, few approaches have been proposed [7][8]. however, the integration of intelligence into rwt has not been clearly investigated. furthermore, a major success factor for the wot is driven by the prevalence of web expertise. the internet networking infrastructure and the existing standards for data storage, visualization, and sharing are, indeed, pillars of the wot vision. nevertheless, these standards and techniques must be extended, revised, and/or revolutionized in order to meet the operational requirements of the rwt and allow them to integrate the web and mutually exchange web services. these services should be easy to publish, discover, compose, and execute. the traditional web service paradigm should then be enriched by promoting the web from both cyber and physical worlds [6]. because of their hardware and software limitations, it would be beneficial to the rwt to collaboratively provide services going beyond their individual capabilities. we then argue that these rwt should organize themselves into clusters where web-enabled devices could act as proxies allowing other rwt to connect to the internet and share their services. as the issues of service composition and clustering within the context of wot were not specifically investigated, we propose in this paper to address them as well as other challenges of the wot using a multiagent-based approach. in the reminder of this paper, section 2 highlights existing works that have addressed the issue of web service provision from intelligent wot to social wot 369 in the wot. section 3 presents our categorization of the wot challenges. section 4 addresses the issue of intelligent wot where the need for intelligent techniques are emphasized and explained. section 5 brings hints about socializing the wot. section 6 focuses on the application of our ideas to two important scenarios, namely web of vehicular ad-hoc network and freight transportation. 2. related work the main challenge of the iot and therefore the wot is to allow a myriad number of rwt to interoperate and mutually “understand” each other. to facilitate this interoperability, several techniques, including universal plug and play (upnp), dlna, slp, and zeroconf have been proposed [9]. each of these techniques has individually been successful in enabling devices to communicate with each other [7]. however, in addition to being not strictly standardized, some of them are inappropriate to resource-constrained devices due to their heavy protocols. thanks to the increasing integration of web-enabled capabilities, large number of rwt are currently benefiting from the existent networking infrastructure of the internet. the wot is then providing these rwt with the service and application layer to interoperate over http [10]. other networking infrastructures like wi-fi and ethernet permit new opportunities to build additional applications and services [7]. furthermore, with the falling size of embedded systems and their growing hardware and software capabilities, it has become possible to integrate lightweight web servers into many appliances [11]. consequently, the academia and the business sector are giving increasing attention to using the web as a platform for the creation of new applications that integrate rwt [10][12]. this trend has resulted in the increasing use of web services for the interoperability of rwt, particularly because of their proprietary and heterogeneous technologies [7]. the possible integration of heterogeneous rwt into the web leads to a more advanced perspective, where these things are abstracted into reusable web services, and not only viewed as simple web pages [6]. for instance, soap-based web services (ws-*) and restful apis allow rwt to offer their functionalities. restful web services are based on representational state transfer (rest) [13] which is lightweight, simple, loosely coupled, flexible as well as easy to integrate into the web using the http application protocol [7]. although rest-based services are being incorporated into many wot applications, particularly where quality of service (qos) levels are firmly applied (e.g., stock market and banking), a more tightly coupled service paradigm like ws-* would be more ideal [14]. recent developments are successfully allowing to embed tiny web servers into rwt (e.g., [15][16]), especially since these servers do not need to handle large number of concurrent connections and requests. however, a lot of research and development efforts remain necessary in order to properly manage the increasing volume of demands from these servers while efficiently using the limited resources of the corresponding rwt. in the current literature, the wot did not attract enough research and development attention, worth of its value. we believe that this is due to its numerous challenges as well as the lack of maturity of related processing and communication capabilities of rwt. we also believe that artificial intelligence techniques, which have proven their extraordinary performance in dealing with problems of highly dynamic, uncertain, and heterogeneous environments, could bring solutions to the problems of wot. some works have integrated such techniques within the context of iot (e.g., [17][18][19]). however, to the best of our 370 n. jabeur, h. haddad knowledge this was not the case for the wot. an interesting study was proposed by zhong et al. [8] where the authors have suggested a holistic intelligence methodology called wisdom wot (w2t) for realizing "the harmonious symbiosis of humans, computers, and things in the hyper world" [8]. the methodology principally aims to implement a closed cycle that starts from things to data, information, knowledge, wisdom, services, humans, and then back to things. this macro-level cycle is not embedded on the rwt which are mostly being considered as data collectors with networking facilities to connect to server providers. 3. challenges of the web of things basically, building the wot concerns ways to design and implement scalable and industry-ready iot solutions on the web. as a subset of the iot, the wot shares many characteristics with wireless sensor networks (wsns), machine-to-machine (m2m), and ubiquitous computing technologies. furthermore, the wot integrates information and physical objects, necessitating new means to model and reason about a range of context types [20]. from a design perspective and compared to the traditional client-server architecture, the wot has a flat architecture that includes two main challenges: a) integrating the rwt into the web; and b) making the rwt provide web services capable of mutually interoperate and fuse into complex services [6]. from a general perspective, we classify the challenges of wot into five main categories: data preprocessing and storage, data analytics, service management, networking and communication, and security, privacy, and trust (figure 1). data preprocessing and storage. the spatially distributed rwt are generally moving in the space while collecting data, anytime, anywhere and for a variety of purposes. to this end, they are usually facing problems to make the appropriate use of their data. in this regard, the rwt have to identify which data is important to collect for the current situation and according to which sampling frequency. the data collected should then be filtered and evaluated according to its semantics, the current context as well as current and expected requirements. once data is cleaned and filtered, it should be stored according to appropriate representations, granularities, and quality. the abovementioned process could be performed with a convenient form of the commonly used extract transform, load (etl) process which is capable of merging data from different sources and creating specialized datasets for a variety of purposes. data analytics. once data have been transformed and fed into local embedded databases, some analytics can start. to this end, some lightweight algorithms could be applied in order to perform a variety of operations, including data mining, semantics extraction, and data correlation identification. these algorithms may derive from genetic algorithms, support vector machines, decision trees, neural networks, and/or cluster analysis. they will be basically applied to small, focused data owned by each rwt. because of their limited storage and processing capabilities, some data analytics processing would go beyond the individual capabilities of rwts. to this end, a trusted, federating entity would be necessary to carry out the necessary processing within appropriate timeframes. this entity could be a rwt endowed with extended capabilities or a remote server to which the participating rwts are registered. this entity has to collect data from individual rwts and aggregate them according to from intelligent wot to social wot 371 specific structures and requirements. because of the increasing number of sensing devices capable of acquiring huge amounts of data, anywhere, anytime, the resulting aggregated data is tending to be huge. advanced data analytics algorithms could then be thoroughly performed, leading to the potential discovery of new relevant data correlations as well as hidden communication, behavioural, mobility, and processing patterns. furthermore, in addition to increasing the context-awareness while processing data, the trusted rwt executing data analytics could infer actionable information through business intelligence mechanisms. these information could particularly allow the concerned rwt to make more informed actions. challenges of web of things data peprocessing service management networking and communication security, trust, privacy data representation data availability data storage data granularity data quality context service publishing service discovery service sharing searching engine service composition protocols mobility of things client/server architecture standards context service mobility context protocols evaluation mechanisms mobility context data analyticsdata mining dependability statistics searching engine context-awareness business intelligence event tracking fig. 1 a proposed classification of the wot challenges service management. the rwt can be directly integrated to the web (in the case they have ip addresses or they are ip-enabled when connected to the internet) and be, consequently, able to understand each other through standardized web languages. they can also be integrated indirectly to the web (e.g., sensor nodes in a wsn) for cost, energy and security considerations [6]. this is achieved through ip-enabled rwt proxies. in both cases, the rwt should allow other devices to interoperate with them and mutually benefit from their services, which requires the abstraction of the rwt into reusable web services [7]. one or both of the w3c web service paradigms (rest-compliant web services) and arbitrary web services can be adopted. the rwt services should be generated on-the-fly or at least within appropriate timeframes [7]. although some technologies (e.g., flyport: www.openpicus.com) and research initiatives (e.g., [15]) have successfully embedded tiny web servers on mobile http://www.openpicus.com/ 372 n. jabeur, h. haddad devices, additional research and development efforts are still needed, particularly because of the physical constraints of rtw. furthermore, the services of rwt should be published in appropriate locations with convenient mechanisms for their discovery. in this regard, existing searching engines and algorithms must be re-examined in order to allow an efficient and effective discovery of rwt services. because of the limited capabilities of rwt, service composition could be a challenging solution where a group of rwt collaboratively create complex services from their individual elementary services. furthermore, although the mobility of rwt offers new opportunities for service composition, it also brings new challenges, basically because it does not guarantee a durable availability of service providers. furthermore, increasing capabilities of smart things to connect to the web is enabling additional flexibility and customization possibilities for end-users. following the tendency of web 2.0 participatory services, especially web mashups, users are currently capable of creating new applications where rwt (e.g., home appliances) are mixed with virtual services on the web [21]. this type of applications is often referred to as physical mashup [22]. a web mashup is a special application that integrates several web resources in order to generate a new service or application. this integration is mainly performed in an opportunistic manner for the sake of end-user’s personal use and generally for non-critical applications [23]. in addition to serving short-term needs, mashups are usually created ad-hoc with well-known, lightweight web technologies (e.g., html, javascript). an example of mashup could be an application that displays on google maps the location of all the pictures posted to flickr [21]. within the context of wot, rwt could be used by mashups in order to create new web services. to this end, these rwt must be easy to locate through the web. in addition, they must maintain the availability of their contributions in the new services. networking and communication. during the last decades, several technologies and standards have been proposed for smart things' communication. the sporadic mobility of rwt makes communication difficult, especially in the context of indoor applications. with the huge variety of types and manufacturers of rwt, interoperability is an upward concern. for instance, the rwt should be able to understand each other by using welldefined communication protocols. since existing protocols, including upnp and jxta, have not been neither standardized nor widely accepted for embedded devices in industry, embedded tiny web servers could be an option [6]. the unpredictable mobility of rwt intensifies the problems of their communication and urges the need for new lightweight protocols, where the identities, capabilities, and requirements of things are supported. trust, privacy, and security. the issues of security, privacy, and trust are always fuelling intensive research works, especially within the context of large scale, open configurations in which specialized and non-specialized parties can participate anytime, anywhere. this is also the case for wot where rwt can exchange and share data/services without having a firm awareness about their mutual intensions and actions. the option of embedding tiny web servers on rwt adds up additional security challenges. the use of rest-based interfaces makes it possible to have secure interactions using https [24]. however, the erratic configuration of the wot and the lack of standards require new and revolutionary security mechanisms. the use of the social web as a platform to ensure the trust and privacy of things has been advocated [25] to control web-enabled things among trusted members on social web sites [7]. however, additional research and development works are still needed toward a successful, widespread use of the wot. from intelligent wot to social wot 373 4. intelligent web of things in this section, we propose a multiagent-based architecture in order to deal with the challenges of the wot. this architecture is expected to be embedded on rwt. we particularly focus on the issue of service composition. 4.1. need for intelligence because of their limited capabilities, non-standardized communication protocols, unplanned mobility, and potentially their heterogeneous data formats, accuracy, and granularity, the spatially distributed rwt definitively need suitable mechanisms to make convenient actions at the right time, depending on their current capabilities and context. in this paper, we argue that the multiagent system paradigm (mas) could be appropriate for the wot, thanks to its proven flexibility, autonomy, and intelligence to solve complex problems within highly dynamic, constrained, and uncertain environments [26]. we believe that several, well-established agent-based techniques could perfectly bring solutions to the deficiency and challenges of rwt highlighted in section iii. 4.2. multiagent-based architecture we propose, in this paper, to embed a mas into rwt in order to handle the wot challenges at different levels. data filtering agent content generation agent networking and communication agent raw data service repository protocols and communication links s e c u ri ty , p ri v a c y , t ru s t a g e n t a p p li c a ti o n service composition agent system fig. 2 an embedded multiagent architecture for rwt our architecture (figure 2) contains four main modules: data filtering agent (dfa), content generation agent (cga), networking and communication agent (nca), and security, trust, and privacy agent (stpa). the dfa processes and analyzes the data collected by local sensing devices as well as data received from neighbouring devices. agentbased techniques for data filtering (e.g., [27]) and data mining (e.g., [28]) can be used. the cga will then be able to create elementary services which will be published later. if a given service is requested by a tier, the rwt should use appropriate communication protocols (e.g., 6lowpan, zigbee, wifi) as well as appropriate communication pathways to respond and convey the requested service. this task is achieved by the agent nca. the operation of the rwt is carried out according to specific security, trust, and privacy rules handled by the 374 n. jabeur, h. haddad stpa. these rules will be updated and improved based on the accumulated experience and the envisioned wot application. our architecture also includes a dedicated agent-based system which will be used for service composition on-demand (requested by peers) or when the rwt is willing to create a new mashup, integrating local, neighbouring, and remote services from trusted peers. 4.3. service composition when some required services cannot be provided individually, rwt should have the option to collaboratively generate new contents beyond their individual capabilities. this collaboration is particularly needed for energy and safety reasons as well as shortage of resources due to rwt mobility. in order to enable rwt collaboration, we propose to allow them creating clusters of things that we call circles of friends (cof). each cof will be composed of a group of rwt that will select each other based on their own preferences. although the creation of cofs is beyond the scope of this paper, we give a brief overview of how they are formed. initially, while publishing its services, any rwt also publishes its wish to belong to a cof with specific social and/or professional aims. interested rwt could then contact each other to make a new cof. one of the rwt is appointed as a head of the cof (hcof). the hcof is responsible of selecting the appropriate rwt to provide the currently requested services and make the necessary plans to generate complex services from elementary ones. in order to motivate rwt to join cof so that complex services could be created more easily, smart things will be rewarded whenever they are participating and providing services within these circles. this will consequently affect their reputation in the wot. a reward, and therefore a reputation, is also assigned to each cof in order to motivate rwt to be active and maintain their cofs. translator agent service generator agent evaluator agent executor agent request service repository specifications service cof members revision function beliefs option generation function desires intentions action generation function plan generation inputs (new communication) fig. 3 (left) embedded multiagent system architecture for service composition, (right) belief-desire-intension architecture of rwt in order to carry out the tasks of a hcof, any given rwt with appropriate physical resources will include a service composition agent system (see figure 3) with the following from intelligent wot to social wot 375 agents: translator agent (ta), service generator agent (sga), evaluator agent (ea), and executor agent (xa) (figure 3, left). the ta will receive the requests for services from its corresponding cof and make the necessary translations between the external languages and communication formats and the internal ones to the hcof. if the request cannot be understood then the hcof can request the help of a member of the circle to make the necessary translations. once the request is translated, specifications are sent to the sga which will consult the repository of the services currently provided by the cof as well as the currently active rwt and their rewards, trust, and security levels. elementary services will be assigned to individual rwt. however, for complex services, the sga plans and generates options to the ea which will make the necessary assessments and select an appropriate service composition plan with one backup plan. the selected plan will then be executed by the concerned rwt and monitored by the agent xa. 4.4. mobile agents a mobile agent is a software component capable of transporting itself from one location to another while performing delegated tasks. it is capable of interacting autonomously with foreign hosts while gathering information on behalf of its owner and delivering information and service based on its context-awareness knowledge [19]. because of the limited capabilities of rwt and the restrictions to access the web, mobile agents could play crucial roles in enabling the wot. for instance, any rwt can create a mobile agent, instruct it with specific tasks, and send it to neighboring or far rwt. the main goals of such agent include reporting events, negotiating deals as well as delivering, promoting, or attracting services to cut operating costs and discovering new partners or proxies. as the rwt contributing to the wot have heterogeneous capabilities, mobile agents should be lightweight to ensure an easy migration from one rwt to another. mobile agents should also abide by the requirements of hosts in terms of security (to avoid attacks), communication protocols, local resources use, and any local operating regulations. to this end, we need an efficient architecture for such agent. this architecture is explained in what follows. 4.5. belief desire intension (bdi) architecture in order to allow the rwt to reason adequately about occurring events and the dynamic surrounding environment affecting their web access, we propose a belief-desire-intension (bdi) architecture [13] for every agent embedded to a rwt (figure 3, left). in this architecture, beliefs represent the local information that the agent has about itself and its rwt (e.g., its current operations, services, processing capabilities, battery lifetime when applicable, communication protocols, etc.) and the environment (neighbouring trusted and untrusted peers as well as their communication protocols and the services they are providing). beliefs could be true or false and are subject to change. the desires reflect the objectives or the situations that the agent would like to accomplish, while the intentions refer to the actions that the agent has chosen to do. the agent will be always listening to communications from neighbouring and remote peers with whom it has connections (e.g., belonging to the same cof). for any new communication received, a revision function is executed in order to update the current beliefs. based on these beliefs, an option generation function updates the desires of the agent. an action generation function is then applied to 376 n. jabeur, h. haddad deliberate the new intensions. a plan generation function is finally executed to schedule the actions of the agent and update the beliefs, desires, and intentions accordingly. 5. socializing the web of things several researches have applied the idea of social networking to the iot arguing that if the iot can be made to imitate the social behaviour of the humans then those smart objects will be able to provide a better service than locally connected objects [29]. this results in a new idea called social internet of things (siot) [30]. siot applications can be a valuable resource in several areas, including domestics, business, automation and industrial manufacturing, logistics, and intelligent transportation of people and goods [31]. by analogy, we adopt in this paper the notion of social web of things (swot) where rwt use the social web as a platform to guarantee network navigability (effectively performing the discovery of objects and services), guarantee scalability as in human social networks, and establish appropriate levels of trustworthiness to improve the degree of interaction among things that are friends. the swot is also an open structure where rwt can seek for help to find trusted peers for their web connection, particularly if they are not web-enabled. they can also find peers with similar objectives with which they can seek advices about the reputation and trustworthiness of other rwt, share operating costs, jointly create services beyond their individual capabilities, mutually delegate tasks, etc. we therefore believe that it is important to adapt existing social theories to the wot context and prepare an impending shift to an environment where social relations will exist between everything. this shift will also bring the swot to the social web of everything (swoe). in order to enable the swot, it is important to possess efficient tools that facilitate a seamless connection and cooperation among devices and users. to this end, it is important to leverage modern paradigms like social networks and crowd-based applications, create a platform allowing the development of swot while enabling its relevant business-wise ecosystem, and create data analysis and recommendation techniques that fit the above paradigms and enable useful application creation. re-examining the concept of mashups and adapting them to the context of wot would be an asset. 6. applications 6.1. intelligent web of vehicles advances on sensing and communication facilities are impelling the evolution of the conventional vehicular ad-hoc networking (vanet) activities to the cloud, creating thereby the emergent notion of internet of vehicles (iov) [32]. in the iov paradigm, each vehicle is potentially involved with heterogeneous devices, communication and networking technologies, service kinds, data formats/contents, accuracy/efficiency requirements, etc. in order to smoothly integrate and connect the rwt and information resources of the iov along with a seamless integration with the social context, we coin the term web of vehicles (wov) that particularly aims to leverage web protocols and technologies for vanet related devices/objects, while facilitating rapid service generation and sharing. some of the devices on vehicles could be web-enabled and could therefore be endowed with embedded tiny web servers. these devices could play the role of proxies for other devices which cannot connect to the internet. to this end, they may provide them with restful apis for a direct web-based access. from intelligent wot to social wot 377 within the context of wov, let us suppose that a commuter wants to reduce his travel time between two given locations. in order to avoid unexpected traffic jams and reduce stoppage time at road intersections, a speed sensor on the commuter vehicle continuously reports information to an onboard decision unit (similar decision units could be embedded to any of the rwt in the wov scenario). this unit also receives data from distance and environmental sensors as well as information/services from the road infrastructure, vehicles, humans, and sensors in the vicinity. in addition to measuring the distance between the current vehicle and neighbouring objects (vehicles, road infrastructures, etc.), a distance sensor on the commuter’s vehicle could receive measurements from similar sensors on vehicles in the vicinity. these measurements should be cleaned and filtered by the distance sensor in order to assess the position of the vehicle with respect to its neighbouring objects from the side where the sensor is deployed. the sensor should also timely share useful information with other appropriate rwt on the road. for a better assessment of the situation, all distance sensors on the commuter’s vehicle will collect similar data and submit reports to the decision unit onboard. agent-based techniques (e.g., [28][27]) could then be used for data filtering and mining purposes on any of the sensors/rwt. as road safety is a shared matter, on-road vehicles have to accommodate each other and mutually exchange contextual information and services on-time. examples of services may include vehicle driving conditions (speeding, planned driving directions, alerts on vehicle about critical situations, etc.), on-road events (traffic jams, accidents, etc.), and professional services (healthcare if the driver is doctor/nurse, plumber, etc.). the vehicles of the wov will create cofs. a cof does not necessary consist of geographically collocated vehicles. for instance, some vehicles may share the same destination or the same social interests and therefore would like to maintain their cof, although they may be very far from each other because of traffic conditions. for each cof, one vehicle will be elected as hcof using an appropriate clustering technique [33]. this vehicle will maintain the list of services provided by each of the vehicles in the circle. it can also request services on their behalf and enable them to socially connect with similar vehicles from other circles. the hcof should always stay tuned to the needs of the members of the circle, update their rewards, plan the composition of complex services, etc. to this end, all requests received by the hcof will be translated, when needed, into the internal language and formats by an onboard intelligent agent. service composition will be planned by a special agent based on the current offering, trust, and capabilities of the vehicles in the cof. since some vehicles would be competing to offer their services and increase their rewards, an agent evaluator will fairly and carefully check service composition plans before handing over the approved plan to an executor agent to monitor the required actions. rewards and trust levels will then be updated accordingly once this plan is achieved. 6.2. smart logistics roughly, logistics is a part of the supply chain process where the forward and reverse flow and storage of good, services, and related information are effectively and efficiently planned, implemented, and controlled between the point of origin and the point of consumption with the aim to meet customers’ requirements [34]. the logistics industry is being considered a key player currently benefiting from the revolution of iot [35]. for instance, large numbers of a variety of machines, vehicles and people are daily packing, moving, and tracking millions of freights around the world within complex ecosystems known for their large operational scales and unpredictable spatio-temporal events. integrating a wide range of heterogeneous assets 378 n. jabeur, h. haddad and allowing them to interoperate in timely fashion is being helped with iot capabilities while creating customized, dynamic, and automated services for their customers. in order to make increasing benefits within this context of falling prices of device components, devices should be allowed to smoothly connect to the web. the wot is an ideal platform that would allow devices to cooperate in a context of smart logistics scenarios. amid the existing applications of logistics, we will focus in what follows in the scenario of fright transportation. although it is already possible today to track and monitor a container in a freighter in the middle of the pacific and shipments in a cargo plane midflight, it is expected from the iot and the wot to provide the next generation of track and trace by allowing them to be faster, more accurate, more predictive, and more secure [35]. the spatially distributed sensing devices can be endowed with web-enabled capabilities to consult nearby and remote devices and request specific services of current interest. imagine that a given damaged container had been moved by some trucks before and another truck is going to move it this time. this latter truck may connect to the wot and request some details and recommendation about the best way to transport this container while avoiding problems because of the already existing damages. since the different tracks could be located in far regions, efficient communications mechanisms are needed. to meet the above goals, clear and standardized approaches are needed to allow a seamless interoperability for exchanging sensor information in heterogeneous environments. sensors should be able to establish trust relations with a circle of friends in order to overcome some privacy issues in the wot-powered supply chain. in order to clarify these ideas, let us suppose the scenario of figure 4 where rwt are embedded or deployed on several facilities, tcof cocof scof ccof legend: cocof (container circle of friends), tcof (truck cof), (scof (ship cof), ccof (crane cof) rwt_truck rwt_container rwt_ship rwt_crane fig. 4 freight transport scenario from intelligent wot to social wot 379 including ships, planes, containers, cranes, etc. these rwt may have different processing, storage, and communication capabilities. because of the highly dynamic environment (e.g., facility movements) and sporadic spatio-temporal events (e.g., accident on the container yard, heavy rain, etc.), rwt have interest to coordinate their effort and particularly take benefit from previous experiences of peers while currently performing similar tasks. to this end, rwt on trucks could create a truck circle of friends (tcof) and rwt on cranes could form a crane cof (ccot). similarly, we can talk about container cof (cocof), ship cof (scof), and plane cof (pcof). let us imagine that a container is being transported by a truck for shipment. an onboard master rwt (let’s call it mco_rwt: master container rwt) is assigned to the control of this container. the mco_rwt could request to join the tcof as service consumer since its container is being transported by a truck. the rwt has also to communicate with any rwt onboard of its container. relevant information could be conveyed timely within the tcof as for example when goods inside the container have underwent some damage and more careful transportation services should be observed. once the container is deposited on the shipment area, the mco_rwt has to confirm to the master rwt assigned to the crane (mc_rwt) its position as well as its local conditions and parameters. the mco_rwt will then unsubscribe from the tcof and subscribe to the ccof. although only one crane is generally responsible of shipping the container, other cranes could give recommendations based on the current conditions of the container as well as the ongoing environmental conditions. once on the ship, the mco_rwt may connect with other rwt during the marine transport (figure 5). our scenario could also be extended to the phase when the container is on road. besides, as some goods in the container could travel by air then the same scenario could be extended to air transportation. mco_rwt container_1 mco_rwt container_nmco_rwt container_2 cocof mt_rwt truck_1 mt_rwt truck_mmt_rwt truck_2 tcof [during transport] mc_rwt crane_1 mc_rwt crane_kmc_rwt crane_2 ccof [during shipment] ms_rwt ship_s ms_rwt ship_1 ms_rwt ship_3 scof [on ship] fig. 5 a multiagent system architecture for freight transport scenario 380 n. jabeur, h. haddad 7. conclusion real world things (rwt) are currently capable of establishing connections to the web, either directly via ip-enabled capabilities or via proxies. however, because of their spatial distribution, heterogeneity, limited resources, and sporadic mobility, maintaining efficient, secure, and durable connections is not straightforward. we therefore presented in this paper some conceptual steps towards enabling the vision of intelligent wot (iwot) and social wot through the use of mas techniques. in order to show the potential of our ideas, we discussed two important application scenarios, namely the intelligent web of vehicles and smart logistics. several issues still need to be addressed in the future to fully implement our vision. in this regard, the mas-based architecture proposed for service composition needs to be refined, implemented and experimented. then it needs to be extended to address the other challenges presented in the paper, including data processing and storage, networking and communication, and trust, privacy, and security. we also believe that considerable research and development works are needed towards socializing the wot. references [1] n. jabeur, h. haddad. “towards an intelligent web of things”, in proceedings of the international conference on recent advances in computer systems racs-2015, hail university, saudi arabia, november 2015. [2] n. jabeur, n. sahli, s. zeadally, “abama: an agent-based architecture for mapping natural ecosystems onto wireless sensor networks”, invited paper, in proceedings of 9th international conference on future networks and communications (fnc-2014), elsevier procedia computer science, volume 34, canada, august 2014. [3] r. rajkumar, i. lee, l. sha, j. stankovic, “cyber-physical systems: the next computing revolution”, in proceedings of the 47th design automation conference. acm, new york, usa, 2010, pp. 731-736. [4] casagras. casagras final report: rfid and the inclusive model for the internet of things, 2009, pp. 10-12. [5] z. pang , “technologies and architectures of the internet-of-things (iot) for health and well being”, kth royal institute of technology, 2013. [6] d. zeng, s. guo, z. cheng, “the web of things: a survey (invited paper)”, j. communications, vol. 6, no. 6, pp. 424-438, 2011. [7] s.s. mathew, y. atif, q.z. sheng, z. maamar. internet of things and inter-cooperative computational technologies for collective intelligence, bessis, n., xhafa, f., varvarigou, d., hill, r., li, m. (ed./s), 2013, pp.1-23 [8] n. zhong, j. ma, r. huang, j. liu, y. yao, y. zhang, j. chen. research challenges and perspectives on wisdom web of things, journal of supercomputing, springer, 2010. [9] s. cheshire, d.h. steinberg, zero configuration networking, the definitive guide, o’reilly, 2005. [10] d. raggett . the web of things: extending the web into the real world, sofsem 2010: theory and practice of computer science, jan 2010. [11] b. ostermaier, m. kovatsch, and s. santini, “connecting things to the web using program-mable lowpower wifi modules”, in proceedings of 2nd international workshop on the web of things, 2011. [12] d. guinard and v. trifa, “towards the web of things: web mashups for embedded devices”, in proceedings of the workshop mashups, enterprise mashups and lightweight composi-tion on the web (mem’09), 2009. [13] r. t. fielding, architectural styles and the design of network-based software architectures, ph.d. dissertation, 2000. [14] c. pautasso, o. zimmermann, and f. leymann, “restful web services vs. 'big' web services: making the right architectural decision”, in proceedings of the 17th international conference on world wide web, ser. www ’08. new york, ny, usa: acm, pp. 805–814, 2008. [15] s. duquennoy, g. grimaud, and j.j. vandewalle, “the web of things: interconnecting devices with high usability and performance”, in proceedings of the international conference on embedded software and systems (icess’09), 2009. from intelligent wot to social wot 381 [16] z. shelby, “embedded web services”, ieee wireless communication magazine, vol. 17, no. 6, pp. 52–57, 2010. [17] g. kortuem, f. kawsar, v. sundramoorthy, d. fitton, “smart objects as building blocks for the internet of things”, in proceedings of the ieee internet computing, vol. 14, no. 1, pp. 44-51, 2010. [18] a. m. mzahm, m. s. ahmad, y. alicia and c. tang, “agents of things (aot): an intelligent operational concept of the internet of things (iot)”, in proceedings of the 13th international conference on intelligent systems design and applications (isda 2013), pp. 159-164, 2013. [19] a. m. mzahm, m. s. ahmad, a. y. c. tang, “enhancing the internet of things (iot) via the concept of agent of things (aot)”, journal of network and innovative computing, vol. 2, pp. 101-110, 2014. [20] p. sawyer, a. pathak, n. bencomo, v. issarny, “how the web of things challenges requirements engineering”, in proceedings of the 3rd workshop on the web and requirements engineering at 12th international conference on web engineering icwe 2012, berlin germany, july 2012. [21] d. guinard, v. trifa, f. mattern, e. wilde, “from the internet of things to the web of things: resourceoriented architecture and best practices” d. uckelmann, m. harrison and f. michahelles, editors, architecting the internet of things, pp. 97-129. springer berlin heidelberg, berlin, heidelberg, 2011 [22] d. guinard, v. trifa, e. wilde, “a resource oriented architecture for the web of things”, in proceedings of ieee international conference on the internet of things (iot) 2010. tokyo, japan. [23] j. yu, b. benatallah, f. casati, f. daniel, “understanding mashup development”, ieee inter-net comput, vol. 12, pp.44-52, 2008. [24] e. wilde, putting things to rest, ucb ischool report 2007-015, school of information, uc berkeley, 2007. [25] d. guinard, m. fischer, and v. trifa, “sharing using social networks in a composable web of things”, in proceedings of the 1st ieee international workshop on the web of things (wot), 2010, germany, 2010. [26] s. bandyopadhyay and e.j. coyle an energy efficient hierarchical clustering algorithm for wireless sensor networks”, proc. of infocom 20013, ieee societies, 2013, vol. 3, pp. 1713-1723 [27] p. skocir, h. maracic, m. kusek, g. jezic, “data filtering in context-aware multi-agent system for machine-to-machine communication”, g. jezic et al. (ed.), agent and multi-agent systems: technologies and applications, smart innovation, systems and technologies 38, 2015. [28] k. a. albashiri, “an investigation into the issues of multi-agent data mining”, ph.d. dissertation, the university of liverpool, liverpool l69 3bx, 2010, united kingdom. [29] x. hannan, n. sidhu, b. christianson, "guarantor and reputation based trust model for social internet of things," in proceedings of the international wireless communications and mobile computing conference (iwcmc), 2015, pp. 600-605. [30] l. atzori, a. iera, g. morabito and m. nitti, “the social internet of things (siot) when social networks meet the internet of things: concepts, architecture and network characterization,” computer network, vol. 56, no. 16, pp. 3594-3608, 2012. [31] l. atzori, a. iera and g. morabito, “the internet of things: a survey,” computer networks, vol. 54, no. 15, pp. 2787-2805, 2010. [32] m. gerla, e-k. lee, g. pau, u. lee, “internet of vehicles: from intelligent grid to autonomous cars and vehicular clouds”, in ieee world forum on internet of things (wf-iot), 2014, pp.241-246. [33] s. vodopivec, j. bester, a. kos, "a survey on clustering algorithms for vehicular ad-hoc networks", in proceedings of the 35th international conference on telecommunications and signal processing (tsp), 2012, pp. 52-56. [34] b. tilanus, information systems in logistics and transportation. elsevier science ltd., uk, 1997 [35] dhl and cisco (2015) internet of things in logistics a collaborative report by dhl and cisco on implications and use cases for the logistics industry, available at: http://www.dpdhl.com/content/dam/dpdhl/ presse/pdf/2015/dhltrendreport_internet_of_things.pdf. http://www.dpdhl.com/content/dam/dpdhl/presse/pdf/2015/dhltrendreport_internet_of_things.pdf http://www.dpdhl.com/content/dam/dpdhl/presse/pdf/2015/dhltrendreport_internet_of_things.pdf instruction facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 463-478 https://doi.org/10.2298/fuee1903463a © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd raac: a bandwidth estimation technique for admission control in manet  folayo aina 1 , sufian yousef 1 , opeyemi osanaiye 2 1 department of engineering and built-in-environment, anglia ruskin university, chelmsford, essex, united kingdom 2 department of telecommunication engineering, federal university of technology, minna, niger state, nigeria abstract. the widespread of wireless mobile network have increased the demand for its applications. providing a reliable qos in wireless medium, especially mobile ad-hoc network (manet), is quite challenging and remains an ongoing research trend. one of the key issues of manet is its inability to accurately predict the needed and available resources to avoid interference with already transmitting traffic flow. in this work, we propose a resource allocation and admission control (raac) solution. raac is an admission control scheme that estimates the available bandwidth needed within a network, using a robust and accurate resource estimation technique. simulation results obtained show that our proposed scheme for manet can efficiently estimate the available bandwidth and outperforms other existing approaches for admission control with bandwidth estimation. key words: admission control, bandwidth, channel idle time, manet 1. introduction in recent times, the need to support qos in manet is rapidly increasing. tasks, especially real-time applications, require qos to enhance its communication (i.e. multimedia data). solutions have been proposed to support qos in wired network, however, these solutions are not directly adaptable to the wireless communication networks, as the latter requires novel solution for manet. nodes must therefore cooperate with one another to guarantee effective routing as well as qos. this cooperation includes endpoint flow policing as well as admission control implementation along the route to prevent network violation of the initially configured policy. the aim of deploying qos support is to provide guaranteed application support in terms of delay, jitter, throughput, bandwidth, etc. to ensure this, the mac layer takes the responsibility of allocating resources at individual nodes, while the network layer must consider resources along the entire communication route. the support for received january 16, 2019; received in revised form march 21, 2019 corresponding author: opeyemi osanaiye department of telecommunication engineering, federal university of technology, minna, niger state, nigeria (e-mail: opyosa001@myuct.ac.za)  464 f. aina, s. yousef, o. osanaiye qos in manet when compared with its wired counterpart is not trivial, due to its lack of infrastructure and sharing of resources and medium [1] [2]. a mechanism that provides qos assurance is known as admission control. the aim of an admission control is to decide whether to admit data sessions that can satisfy a given qos requirement without violating any previously made rules or reject sessions. the main issue encoun/during the implementation of admission control mechanism revolves around retrieving information on the available network resources. the admission control protocol must be able to determine if there are nodes that have the available resources to accommodate the intended traffic flow [3] [4]. in this work, we propose raac which is used to estimate the available bandwidth in a network for admission control purpose. raac combines and improves the existing algorithms of measurement-based available bandwidth estimation and flow admission control (bandest) and cognitive passive estimation of available bandwidth (cpeab). we identify the key metrics that must be considered for our protocol to have a better performance a mechanism that determines the measurement of all these metrics to improve the network performance has been implemented using opnet modeler simulation tool. the rest of the paper is organized as follows; section 2 presents related works while section 3 describes bandwidth estimation and admission control. in section 4, we present our proposed resource allocation and admission control (raac) while section 5 presents the experimental simulation. finally, section 6 concludes the paper. 2. related works manets in recent times have become the choice wireless network due to the numerous advantages it proffers. in wired network, the available bandwidth measurement is done using an active estimation technique [5]. this technique is not suitable for manet because it makes use of probe packets when measuring the available bandwidth between source and destination. if the number of source to destination pair is large, it will result in the sending of many probe packets which in turn consumes a large amount of bandwidth. yang and kravets [6] proposed a contention aware flow admission control for ad-hoc network (cacp). in cacp, flow admission control is performed based on estimating the available bandwidth. the estimation is done using the wireless channel sensing mechanism by considering the back-off period. it is assumed that the back-off period is negligible even at saturation. cacp considered both intra-flow and inter-flow contention count in a distributed manner. the drawbacks of cacp is its non-consideration of the effect of mac layer on the available bandwidth, and its failure to consider the impact of mac layer overhead when data traffic load is increased within a network. sarr et al. [7] propose an available bandwidth-based flow admission control (abe) algorithm for wireless network. estimation of the available bandwidth is done by using the wireless channel sensing mechanism. to achieve this, they considered the virtual, physical carrier sensing, and different types of wireless csma/ca mac layer interframe spacing. the authors argued that measuring the channel activities, considering the amount of time spent in the physical and virtual carrier sensing with different interframe space, results in overestimating the available bandwidth. this is due to the non-synchronization between the sender and the receiver within an ad-hoc network (note that synchronization between the sender and receiver as used in the context of this work means that for communication to occur, the medium availability on the sender and the receiver must synchronise). the authors thereafter propose a mathematical model that considers the collision probability to estimate the actual raac: a bandwidth estimation technique for admission control in manet 465 available bandwidth and the future back-off overhead. the collision probability is derived from the amount of hello messages received by a node over the amount of hello packets expected to be received by the node at the previous interval measurement. the admission control flow algorithm makes use of one-hop neighbour and two-hop neighbour information to calculate the intra-flow contention and the authors used 4 as the maximum intra-flow contention. to calculate the inter-flow contention, the minimum available bandwidth within the interference range is determined to decide on the flows admission request. the drawbacks of this technique are: (i) if there is an increase in the data traffic load within a network, the only factor considered is the additional back-off overhead. other important factors, such as additional retransmission and contention window overheads are ignored. (ii) the intra-flow contention count calculation does not always provide a right contention count and appears as been too simple, since it only considers the minimum available bandwidth within the interference range of a node. (iii) collision probability is calculated without considering the hidden and exposed node causing unnecessary delay. an improved available bandwidth (iab) has been proposed by zhao et al. [8]. this protocol estimates the available bandwidth of a giving link for qos support in wireless adhoc network. it considers the synchronization between the source and the destination node by differentiating the busyness caused by the transmitting and receiving node from those caused by the sensing node. furthermore, the work also improved the accuracy of estimating the overlapping probability of the idle time of two adjacent nodes. the drawback of this technique is similar to (i) and (ii) mentioned in [7]. cognitive passive estimation of available bandwidth (cpeab) was proposed by [9]. this protocol estimates the available bandwidth of a network in an overlapped wifi environment. it considers the additional overhead caused by acknowledgement frames, which was not considered in both aac and abe, therefore estimating the available bandwidth by measuring the proportion of waiting and back off delay, packet collision probability, acknowledgment delay, and channel idle time. furthermore, cpeab considered the hidden and exposed node to have a more accurate available bandwidth measurement. the drawback of this proposed algorithm is that the intra-flow contention count calculation does not always provide a right contention count. additionally, retransmission and contention window overheads were also ignored in the proposed algorithm. to retrieve the available bandwidth on a carrier sensing, hello packet is broadcasted to two hop neighbour which floods the network to increase the network overhead. lastly, the dependency of the channel idle time ratio only differentiates between the busy and sensed busy and did not regard an empty queue to be an idle channel time period. we define the busy state as a situation whereby a node is in the state of transmission or receiving while the sense busy state is defined as a situation whereby a node is in the state of sensing. any other time outside the sensing time means the node is in an idle state. the idle state means that the node is neither transmitting, receiving nor sensing any packet. for a channel to be idle, the channel does not necessarily have to be sensed idle by both the physical and virtual wireless carrier sensing mechanism, however, the interface queue must be empty. nam et al. [10] improved on the work of [7] by enhancing its algorithm to include retransmission mechanism and back-off overhead. the drawback of this technique is that the contention window overhead was not considered with increase in data traffic load inside the network. also, the assumptions made in the mathematical model may not hold through in the actual network. farooq et al. [11] propose a proactive bandwidth estimation (pabe) for ieee 802.15.1based network. pabe is a measurement based enhancement for available bandwidth 466 f. aina, s. yousef, o. osanaiye estimation method and flow control admission control algorithm. instead of deploying a model to predict the collision and back-off, empirical method for gathering data was used to predict any additional back-off overhead. besides, it uses the value of the expected future data traffic load to predict additional overhead instead of using the existing one. the drawback of this algorithm is the increase in data traffic load within a network, as additional retransmission and contention window overheads are ignored. also, the computation of the intra-flow and inter-flow contention count was inaccurate. lastly, to retrieve the available bandwidth on a carrier sensing, hello packet is broadcasted to two hop neighbour which tends to flood the network, which in turn increase the network overhead. bandest, another algorithm proposed by farooq et al. [12], proactively considers the complete wireless 802.15.4 unslotted csma-ca mac layer overhead and considers the future load. additionally, it considers the estimation of intra-flow contention and estimates contention on non-relaying nodes. additional mac layer overhead that is associated with the increase in data traffic load was considered and an algorithm that deals with concurrent admission request in a fifo was implemented. the drawback of bandest is that it has a higher overhead because it broadcast to two-hops. furthermore, bandest did not consider the channel idle time dependency together with the effect of hidden/exposed node on the accuracy of bandwidth estimation. from the reviewed literature, the channel idle time dependency sensed by both the sender and receiver has not been properly addressed as most previous works in the literature did not factor it in their design. this work therefore proposes a resource allocation and admission control (raac) mechanism that estimate the bandwidth for admission control based on some key factors. 3. factors to be considered for admission control implementation in this section, we identify the key factors that are essential to implement admission control within a network. this will help to create a background work to evaluate the related works. 3.1. channel idle time dependency channel idle time dependency sensed by the sender and the receiver ensures an accurate estimation of the available bandwidth. this is achieved by differentiating the nodes busy state from sense state and differentiating the channel idleness that may be caused by an empty queue. 3.2. intra-flow interference transmitted packets interfere with all nodes within the carrier sensing range of the transmitting host. by considering a multi-hop path, some forwarding nodes are located within the sensing range of one another, therefore, the same flow are transmitted several times in the same sensing region, thereby using the same shared channel. this circumstance is known as intra-flow contention. in [13], the contention count is defined as the number of nodes on the multi-hop path located within the carrier sensing range of the contending host. raac: a bandwidth estimation technique for admission control in manet 467 3.3. collision with respect to hidden node and unnecessary delay from exposed nodes in wireless network, there is no possibility of detecting if a collision will happen, therefore, once it happens, both colliding frames are emitted completely, thereby maximizing the loss in bandwidth. therefore, when estimating collision and unnecessary delay within the available bandwidth, consideration must be given to check the impact of both the hidden and the exposed terminal nodes [9]. 3.4. increased data traffic increased data traffic inside the network leads to an increase in csma/ca which is based on mac overhead with respect to back-off interval, retransmission number, acknowledgement packet and contention size. when a data traffic load of a network is increased, it in turn increase the csma/ca based mac layer overhead; therefore, the available bandwidth estimation of the admission control algorithm needs to take note of the consumed bandwidth such as the mac layer overhead corresponding to different values of the offered data load inside a network [14]. 4. resource allocation and admission control (raac) our proposed algorithm, raac, has adopted bandwidth estimation, where channel idle time dependency, intra-flow interference, collision with respect to hidden nodes and unnecessary delay impact due to exposed nodes, and lastly, increased data traffic inside a network leading to an increase in csma/ca based on mac overhead was considered. raac is a novel, efficient and accurate resource allocation and admission control technique that estimates the available bandwidth for the admission controller to either accept or reject a session when an admission is requested. the process to achieve this can be divided into three, namely; measuring the channel idle time dependency, measuring the intra-flow contention, and resolving issues of hidden node causing collision and exposed nodes leading to unnecessary delay. 4.1. measuring the channel idle time dependency figure 1 depicts a wireless state transition diagram. a node in this transmission diagram is said to be in a state of transmission, only if it is currently emitting signals through its antenna. a node is said to be in a receiving state if there are nodes transmitting within its transmission range. a node is said to be in its sensing state if the medium is sensed busy but there is no receiving frame because the energy is below the receiving threshold. a node is said to be in an idle state if it is not transmitting, receiving, or sensing any packet. by differentiating sense busy state from the busy state and redefining the idle channel time of a station to include a time that the mac queue is empty, allows for the synchronization of the sender and the receiver as well as proper available bandwidth estimation. the available bandwidth with respect to the channel idle time dependency is therefore; (1) where ti, tb, ts, te, denotes the time duration of the idle, busy, sense busy and empty queue states respectively at a measured period t. c is the maximum link capacity. 468 f. aina, s. yousef, o. osanaiye fig. 1 wireless radio transition diagram [15] to further clarify this, the scenario in figure 2a was considered, where n1 is transmitting to n2. figure 2b shows the basic ieee 802.11 exchange of frame sequence (at the top) and the channel state sensed by all the nodes. all the nodes that falls into the transmission range of node1 can successfully decode any packet from it. furthermore, information about the time it finished transmitting the packet can also be determined. at this time, they are in the receiving state, which is busy state. even though n1 is defined as idle in “interval a”, during this period, the medium must be sensed idle by n1 and cannot be used by nodes within the carrier sensing range. to eliminate this inaccuracy, the coefficient k was adopted as used in [13], where: ̅̅ ̅̅ ̅̅ ̅̅ ̅̅ ̅̅ ̅ (2) k represents the proportion of the bandwidth consumed during the waiting and the back-off period. note that the back-off varies, therefore, we use its average value, which is written as, backoff . the number of back-off slot that decrements for a single frame on an average can be represented as: ∑ ( ) ( ) (3) where cwmin represents the initial (or minimal) value of the contention window and cwmax represents the maximum value of the contention window, with cwmax = 2 n . m denotes the maximum number of retransmissions attempted (m ≥ n); x denotes the number of retransmissions suffered by a given frame, therefore: ( ) { ( ) p represents the conditional collision probability [16], which is the probability that a transmitting packet will collide. the following expression can be used to derive the backoff : (4) raac: a bandwidth estimation technique for admission control in manet 469 note that the packet collision probability effect (p) was included in the calculation of k. fig. 2a wireless transmission scenario showing transmission range and carrier sensing range [15] fig. 2b channel states sensed by nodes in scenario 2a [15] 470 f. aina, s. yousef, o. osanaiye 4.2. measuring the intra-flow contention determining the correct value of the intra-flow contention depends on the interference range of the node in a network. let us assume that the nodes within the two-hop distance can cause interference, therefore, the interference count on any node along the path forwarding the data majorly depends on the distance of the node from the source and the nodes destination. for a new admission control request to be granted, raac determines the actual intra-flow contention count along the source node, intermediate node, and the destination node. 4.3. resolving issues of hidden and exposed nodes looking at the ieee 802.11 frame exchange sequence in figure 3, interval iii is used for transmitting data frame which is dependent on the frame size. moreover, according to [7], the size of a frame has a direct impact on the packet collision rate, where the impact of hidden and exposed node was not considered by the author. fig 3 frame exchange sequence in rts/cts mechanism [17] therefore, using [18], the impact of a flows hidden/exposed terminals can be calculated as: { ( ) ( ( ) ) (5) where, f_h denotes the total data flow of hidden nodes and fe denotes the total data flow of the exposed node. to solve the issue of hidden nodes and exposed nodes which may cause collision and unnecessary delay, the request to send and clear to send (rts/cts) mechanism is activated. in figure 3, interval ii shows the frame exchange sequence when the rts and cts mechanism is activated. interval ii, therefore consist of rts and cts messages with two sifs (short interframe space) in between them. the overhead incurred by rts and cts is calculated as: raac: a bandwidth estimation technique for admission control in manet 471 { ( ) (6) by considering the extra overhead that may be added when the rts/cts is used, the available bandwidth estimation can be more precise. scenario without hidden/exposed node: figure 4 depicts a topology without hidden/exposed node. the two nodes involved are located within each other’s transmission range. one of the nodes is sending traffic to the access point while the other node is estimating the available bandwidth. fig. 4 scenario without hidden/exposed node [9] scenario with hidden/exposed nodes: in figure 5 and 6, we consider a topology which is configured to have 1 hidden node and 1 exposed node. fig. 5 exposed nodes [18] fig. 6 hidden node [18] 472 f. aina, s. yousef, o. osanaiye figure 5 shows that node b and node c, are in the same transmission range. when node b sends data to node a, node c will detect that the channel is busy and node c will not make any attempt to send data to node d to avoid collision. the same process applies vice-versa. note that node b and node c are each other’s exposed node. in figure 6, node a is not in the transmission range of node c. whenever node a sends packets, node c detects that the channel is idle, if node c sends data at the same time, it will result in packet collision, i.e. packet a and c will collide with node b, which will eventually result in transmission failure. note that node c is the hidden node of node a. 4.4. increased data traffic lead to an increase in csma/ca mac overhead farooq and kunz [11] in their work observed that an increase in data traffic in the network results in an increase in the csma/ca mac overhead, due to the number of retransmission and back-off duration. therefore, for an available bandwidth estimation to be effective, there is need to take note of the bandwidth consumed by the mac layer overhead corresponding to the different values of the data load offered inside a network. in [11], an experimental study was carried out to determine the ieee802.15.4 unslotted csma/ca mac layer overhead (retransmission and back-off) with increased data load in the network. it was observed that an increase in data load will lead to an increase in the average back-off as well as the retransmission overhead. therefore, it is essential to consider the back-off and retransmission overhead by taking note of the additional data load inside the network. if there is an excess of 60kbps of the anticipated data load within the interference range of a network, the extrapolation technique can be used to determine the additional back-off and retransmission overhead. in order to estimate the additional mac layer overhead leading to an increased data traffic load, the author in [11] presented a method in section 2.1 of their work. here, the mac layer overhead is considered after determining the future data load ( i.e., the current data traffic load at the interference range of a node is added to the contention count and then multiplied by the new flow’s required bandwidth). the overhead associated with the method presented in [11] is that a lookup table is stored on nodes that returns estimated mac overhead corresponding to a given value of the data load inside a network. it is not possible to store the mac layer overhead in terms of bps corresponding to each possible offered data load, but an algorithm can estimate the mac layer overheads for an offered data load not present in the lookup table by linear interpolation, using the two closest available data points. by applying equation (1) through to (6), we derived an estimation of available bandwidth for raac, which is: ( ) ( ⁄ ) ( ) ( ) (7) where: k= bandwidth consumed as per waiting time and back-off pc= packet collision probability ack= acknowledgement c= maximum link capacity l= traffic load r/c= rts/cts ti = idle time of the wireless in a measured period t raac: a bandwidth estimation technique for admission control in manet 473 5. simulation parameters in this section, we use opnet modeler to simulate our design to evaluate the performance of raac. we have deployed 100 nodes which was randomly distributed in a 1200x1200m area. furthermore, we set other network parameters accordingly, i.e. link capacity of 54mbps, transmission range of 250m and carrier sensing range of 550m was used. t is set to 1s and 6 sender and receiver nodes were randomly selected among the 100 nodes to carry out the background traffic while the rest of the nodes are either acting as relay node or idle. simulation was carried out for 60 seconds and each simulation was repeated 10 times. table 1 depicts the parameters used for our simulation. table 1 simulation parameter 5.1. simulation model and evaluation of raac similar to the work of [17], a scenario in figure 7 is used in evaluating raac. flow 1 (f1) on link (5,6) has a variable bandwidth and flow 2 (f2) on link (1,2) has a constant bandwidth of 600kbps. the available bandwidth estimation on link (3,4) for raac is calculated using equation 7. the link capacity is 54mbps and the source nodes which are nodes 1 and 5 generates 1kbyte traffic. the distance between each node is 200m. fig. 7 simulated network topology [17]. parameter value number of nodes 100 total network area 1200 x1200m link capacity 54mbps packet size 127bytes transmission range 250m carrier sensing range 550m number of sender-receiver 6 t 1sec number of simulation (repetition) 10 times simulation time 60s difs 28ms sifs 10ms slot time 9ms mac header size 34byte acknowledgement 33bytes rts size 20byte cts size 14byte cwmin 15 cwmax 1023 traffic type cbr 474 f. aina, s. yousef, o. osanaiye as we will be estimating the available bandwidth every t (sample period) seconds, the choice of t will have an impact on the available bandwidth estimation. we show the impact of this in the next section. to have a fair comparison, t has been chosen to be 1 second, just as in the work of [9], [12] and [11]. 5.2. measuring the available bandwidth to measure the available bandwidth on a given link (s, r) during simulation, we transmitted a flow f on the link (s, r). for each value obtained, the rate of the flow is increased incrementally. if one of the other existing flows in the network sees its rate decrease by more than 5%, the increase in the rate of the flow f (s, r) is stopped. the achieved rate f (s, r) is considered as the available bandwidth on the link (s, r), i.e. the real bandwidth that can be achieved without degrading close flows. 5.3. simulation results assessing raac: we compared the available bandwidth estimated by raac with the real available bandwidth, as shown in figure 8. our bandwidth estimation approach, raac, has been able to predict the available bandwidth notwithstanding the type of traffic flow. even though some little estimation variations were recorded in some instances (see figure 8), the results obtained by our proposed raac is very close to the actual available bandwidth. for clarity purpose, we present the average value of the real available bandwidth and the value obtained from our proposed raac (see table 2). the results obtained from the measured and estimated bandwidth show how well raac has been able to estimate the measured available bandwidth. fig. 8 available bandwidth estimation between raac and real available bandwidth raac: a bandwidth estimation technique for admission control in manet 475 table 2 average available bandwidth measurement per traffic flow bandwidth estimation method average value of traffic flow (bps) real available bandwidth 15757.12 raac 15844.42 assessing raac against cpeab, pabe, and bandest: here, we evaluate our proposed approach, raac, with related past works, cpeab, pabe and bandest using the same scenario in section 4. the available bandwidth estimation on link (3,4) for cpeab [9], pabe [12] and bandest [11] is calculated using equation 8, 9, and 10. our implementation of pabe and bandest adopted the mathematical model of estimation as against the proactive method used by the authors. the mathematical method was used to ensure a fair comparison. the estimation of cpeab, on the other hand, was presented by the authors using mathematical model. ( ) ( ) ( ) (8) ( ) ( ) (9) ( ) ( ) (10) where tr and ts are the idle time of the sender and receiver in the wireless medium. all other parameter definition can be found in section ii. the result presented in figure 9 shows how raac outperforms other protocols when estimating the available bandwidth between a sender and a receiver pair of wireless node. this can be attributed to bandest assumption on the overlap idle channel period, which resulted in an over estimation of the available bandwidth. also, pabe and cpeab assumed that the idle channel is independent, therefore resulting in the underestimation of the available bandwidth. raac considers the dependency of two adjacent node idle channel occupancy by differentiating the busy state from the sense busy state and the idle state caused by an empty queue to ensure a better and accurate estimation. raac use the current estimated available bandwidth to predict the next period, just like in the case of other calculation-based approaches. fig. 9 available bandwidth estimation 476 f. aina, s. yousef, o. osanaiye we have also plotted the estimated error statistics for each simulation as computed by [17] and [9] as shown in equation 11: [ ] (11) fig. 10 error estimation ratio (percentage) the results shown in figure 10 further buttress the graph presented in figure 9. this shows that our proposed technique, raac, gives a better estimate of the available bandwidth when compared with cpeab, bandest and rabe. effectiveness of the estimated bandwidth: suppose the source node of a flow transmits admission request message at 10, 20, 30, and 40 seconds, we consider that a flow makes a wrong admission decision if it accepts a new flow that degrades the throughput of an already existing flow and/or the newly admitted throughput by more than 5%. also, an admission control algorithm of a flow makes a wrong decision if it unnecessarily rejects a flow. both pabe and cpeab techniques did not consider cases of wrong rejection of a flow; therefore, according to [11], the effectiveness (ɳ) is more comprehensive. one may argue that an unnecessary rejection of admission request flow will not degrade the performance of a flow that has already been admitted. therefore, wrong acceptance of flows is worse as compared with unnecessary flow rejection, hence, wrong admission should only be considered as a bad admission decision. an alternative argument is that the available resources must be efficiently used, otherwise, there may be deployment of sufficient resources for qos requirement flow to be satisfied during peak network utilization. however, in most cases, network resources are always underutilized, therefore, for a comprehensive evaluation to be achieved, equal importance is given to both types of wrong decision, such that: ɳ= number of correct admission decision/total number of admission requests; where ɳ represent the effectiveness. figure 11 shows the mean effectiveness and evaluation over 10 repetitions, along with 95% confidence interval. it shows that the mean effectiveness of raac is higher than cpbea, pabe and bandest, and the difference is statistically significant. raac may also give a wrong admission accepts at some point due to factors such as corruption of bandwidth raac: a bandwidth estimation technique for admission control in manet 477 increment, broadcast messages due to interference, and lost admission reject message in response to a bandwidth increment message. therefore, figure 11 shows that the mean effectiveness of raac is higher than the other techniques while also showing the mean effectiveness when an admission control is not implemented. non-implementation of admission control means there is no control message overhead outside the routing message, however, the flow is lower than all other admission control protocol implemented in the work. if we are considering few flows, we do not need to implement admission control scheme, as all flows can be accommodated. this however is a rare case, especially when shared and low bandwidth characterizes wireless network. in conclusion, raac is more effective because of its low chance of false rejection. in pabe and cpeab, correct contention factors were not considered (see section 2.3 for correct contention count estimation), hence their effectiveness is very low. fig. 11 different bandwidth effectiveness table 3 shows the number of times the different schemes considered makes an incorrect admission decision. it is observed that raac makes fewer wrong decisions as compared with cpeab, pabe and bandest. therefore, raac is effective because it has a lower chance of falsefully rejecting an admission request, since the algorithm is designed to account for all overhead generated by the network. table 3 number of wrong admission decisions comparison (100 nodes) method wrong accepts wrong rejects bandest 18 3 cpeab 25 7 pabe 30 5 no admission control 58 0 raac 16 1 478 f. aina, s. yousef, o. osanaiye 6. conclusion in this work, we present a new approach to improve the accuracy of estimating the available bandwidth for admission control. factors that must be considered for a flow admission control algorithm has also been highlighted. we have proposed raac, a novel algorithm for manet that considers factors such as channel idle time dependency, intra-flow interference, collision with respect to hidden nodes and unnecessary delay impact due to exposed nodes, and lastly, the effect of increase in data traffic inside a network. results obtained through simulation demonstrates that by considering the factors highlighted, an effective available bandwidth-based admission control can be guaranteed. a comprehensive comparison has shown that raac provides a significant improvement as compared to other related previous research work. references [1] s. chaudhari and biradar, “survey estimation techniques in communication networks”, wireless personal communication an international journal., vol 83, pp. 1425–1476, 2015. [2] c. lal, v. laxmi, and m. gaur, “bandwidth-aware routing and admission control for efficient video streaming over manets”, springer science and business media., 2015. [3] y. su, s. chan, and j. manton, “bandwidth allocation in wireless ad hoc networks: challenges and prospects”, ieee communication magazine, pp. 80-85, 2010. [4] s.y. oh, g. marfia, m. gerla, “manet qos support without reservations”, journal of security and communication networks, vol. 4, no. 3, pp. 316–328, 2011. [5] h. zhu and i. chlamtac, “admission control and bandwidth reservation in multi-hop ad hoc networks,” computer networks, vol. 50, no. 11, pp. 1653–1674, 2005. [6] y. yang and r. kravets, “contention-aware admission control for ad hoc networks,” ieee trans. mobile comp., vol. 4, aug. 2005, pp. 363–77. [7] c. sarr, c. chaudet, et al. “bandwidth estimation for ieee 802.11-based ad hoc networks”, ieee transactions on mobile computing, vol. 7, no. 10, pp. 1228-1241, 2008. [8] h. zhao, e. garcia-palacios, j. wei, & y. xi, “accurate available bandwidth estimation in ieee 802.11based ad hoc networks”, computer communications, vol. 32, no. 6, pp. 1050–1057, 2009. [9] s. tursunova, k. inoyatov, & y.-t. kim, “cognitive passive estimation of available bandwidth (cpeab) in overlapped ieee 802.11 wifi wlans” in proceedings of the ieee network operations and management symposium, 2010, pp. 448–454. [10] n. van nam, i. guerin-lassous, v. moraru, and c. sarr, “retransmission-based available bandwidth estimation in ieee 802.11-based multihop wireless networks,” in proceedings of the 14th acm international conference on modeling, analysis, and simulation of wireless and mobile systems (mswim ’11), november 2011, pp. 377–384. [11] m. farooq, & t. kunz, “bandest: measurement-based available bandwidth estimation and flow admission control algorithm for ieee802.15.4-based wireless multimedia networks”, international journal of distributed sensor networks, vol. 2015, 2015. [12] m. farooq, & t. kunz, “proactive bandwidth estimation for ieee 802.15.4-based networks”, in proceedings of the 77th ieee vehicular technology conference (vtc ’13), 2013, pp. 1–5. [13] r.e renesse, v. friderikos and h.aghvami, “cross-layer cooperation for accurate admission control decision in mobile ad-hoc networks”, iet communications, vol. 1, no. 4, pp. 577–586, 2007. [14] a. paul, a. tachibana, and t. hasegawa, “an enhanced available bandwidth estimation technique for an end-to-end network path”, ieee transaction on network and service management, vol. 13, no. 4, pp. 768781, 2016. [15] h. zhao, e. garcia-palacios, j. wei, & y. xi, “accurate available bandwidth estimation in ieee 802.11based ad hoc networks”, computer communications, vo. 32, no. 6, pp. 1050–1057, 2009. [16] a. nafaa, “provisioning of multimedia services in 802.11-based networks: facts and challenges”, ieee wireless communications, vol. 14, no. 5, pp. 106–112, 2007. [17] h. j. park, & b.-h. roh, “accurate passive bandwidth estimation (apbe) in ieee 802.11 wireless lans”, in proceedings of the 5th international conference on ubiquitous information technologies and applications, 2010, pp. 1–4. [18] ietf draft, routing algorithm based on the flow sensing parameter, draft-wei-manet-rafsp-00, july 2009. instruction facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 637 643 doi: 10.2298/fuee1504637j investigation on cylindrical gate all around  (gaa) to nanowire mosfet for circuit application biswajit jena 1 , kumar prasannajit pradhan 2 , prasanna kumar sahu 2 , sidharth dash 1 , guru prasad mishra 1 , sushanta kumar mohapatra 2 1 device simulation lab, institute of technical education & research, siksha 'o' anusandhan university, khandagiri, bhubaneswar, odisha-751030, india 2 nano electronics laboratory, department of electrical engineering, national institute of technology (nit), rourkela, 769008, odisha india. abstract. undoped cylindrical gate all around (gaa) mosfet is a radical invention and a potential candidate to replace conventional mosfet, as it introduces new direction for transistor scaling. in this work, the sensitivity of process parameters like channel length (lg), channel thickness (tsi), and gate work function (φm) on various performance metrics of undoped single material (sm) and double material (dm) cylindrical gaa (cgaa) to nanowire mosfet are systematically analyzed. the electrical characteristics such as on current (ion), subthreshold leakage current (ioff), the threshold voltage (vth) and transconductance (gm) are evaluated and studied with the variation of device design parameters. the discussion gives the direction towards low standby operating power (lstp) devices as improvement in ioff is approaching 90% in nanowire mosfets. all the device performances of undoped sm and dm cgaa mosfets are investigated through sentaurus device simulator from synopsys inc. key words: cylindrical gate all around, mosfets, sces, analog and rf foms 1. introduction to get low cost, high operational speed and better performance, the dimension of the conventional transistors need to be downscaled to sub-nanometer region. the reduction of mosfet dimensions will degrade the gate control over the channel due to the close proximity between the source and drain. this leads to increase various short channel effects (sces) like hot carrier effect, threshold voltage roll-off, and substrate bias effect [1], [2]. many new devices have been introduced in beyond moore’s era [3]–[5] to suppress the sces and enable further scaling down the device. similarly, some multi-gate silicon on insulator (soi) technology has also been proposed to replace the conventional received february 19, 2015; received in revised form may 15, 2015 corresponding author: k. p. pradhan nano electronics laboratory, department of electrical engineering, national institute of technology (nit), rourkela, 769008, odisha india (e-mail: skmctc74@gmail.com) 638 b. jena, k. p. pradhan, p. k. sahu, s. dash, g. p. mishra, s. k. mohapatra mosfet [6]–[10]. however, the cylindrical gate all around (cgaa) mosfet is one of the novel devices which further enables the scaling without hindering the device performance [11]. because of the low characteristic length and higher drive current, cgaa mosfets can achieve higher packing density as compared to the double gate (dg) mosfets [12]–[16]. also, cgaa mosfet has excellent electrostatic control of the channel, robustness against sces, better scaling options, no floating body effect, larger equivalent number of gates, ideal subthreshold swing as compared to other multiple-gate mosfets. hence, the cgaa mosfets are a promising solution for nanoscale technology cmos devices [17]–[21]. and the important device parameters like threshold voltage (vth), and on-off ratio (ion/ioff), are very much sensitive to the device geometry such as channel length (lg), channel thickness (tsi), and gate work function (φm). thus, the authors have taken an attempt to present a detailed analysis of the performance dependency of sm and dm cgaa mosfets on device geometry variation. in this paper, different performance metrics, like drain current (id), and transconductance (gm) are systematically presented with the variation of lg, φm, and tsi. along with the introduction, section 2 describes the device structure description that includes all the dimensions, materials and doping concentrations of both sm and dm cgaa mosfets. this section also analyses the physics of the device using device numerical simulations and models activated for simulation. section 3 comprises of all results and discussion. finally, the concluding remarks are presented in section 4. 2. device description and simulation setup the schematic diagram of the fully depleted single material (sm) and dual material (dm) cylindrical gaa (cgaa) mosfet structures used for modeling and simulation are shown in fig. 1 (a) and (b) respectively. the radial and lateral directions of the channel are assumed to be along the radius and the z-axis of the cylinder as shown in fig. 1. the source and drain of the device are uniformly doped with doping concentration of nd = 1× 10 20 cm −3 . the channel is kept undoped. the gate oxide thickness is tox = 1.1 nm. the metal gate work functions, φm=4.6 ev for sm and φm1=4.6 ev, φm2=4.6 ev for dm are considered. (a) (b) fig. 1 schematic structure of cylindrical gate all around (gaa) mosfet (a) single metal gate (b) dual metal gate the simulation is carried out by the device simulator sentaurus, a 3-d numerical simulator from synopsis inc. [22]. to obtain accurate results for mosfet simulation, we cylindrical gate all around (gaa) to nanowire mosfet 639 need to account for the mobility degradation that occurs inside inversion layers. the default carrier transport model in sentaurus is the drift diffusion model is activated.for the drift-diffusion model, the current densities for electrons and holes are given by: ( 1.5 ln ) ( ln )n n c n n nj n e nkt m d n n         (1) ( 1.5 ln ) ( ln )p p v p p pj p e pkt m d p p         (2) where, nj and pj are electron and hole current density. μn and μp represent electron and hole mobility. n and p describe electron and hole density. n and p are fermi statistics constant, and mn and mp present spatial effective masses of electron and hole respectively. t and k describe temperature and boltzmann constant. ec and ev are conduction and valance energy bands. dn and dp represent the diffusion constants for electron and holes respectively. in the simulation basic mobility a model is used that takes into account the effect of the doping dependence, high-field saturation (velocity saturation), and transverse field dependence. the silicon band gap narrowing model that determines the intrinsic carrier concentration is activated. models for quantum mechanical effects have not been invoked when radius of the silicon pillar is changed from 10 nm to 5 nm.[23]. uniform distribution of interface fixed charges 4x10 11 cm -2 has been used in the simulation. the electron and hole surface recombination velocity are considered as 1x10 4 cm/sec. the models activated in the simulation comprise of field dependent mobility, concentration dependent mobility and velocity saturation model. model parameters used from the lookup table are carrier mobility µno=1076 cm 2 /v.s, µpo=460.9 cm 2 /v.s, n= p= 1x10 -7 s are the electron and hole lifetimes and suitable empirical parameters βn, βp are selected to calibrate the drift-diffusion transport model. 3. results and discussion in order to analyze the impact of channel length (lg), and channel thickness (tsi), and gate work function (φm), on the device performance, the simulation is carried out by varying the above parameters. fig. 2(a) and (b) show the drain current (id) in the linear scale as a function of the gate to source voltage (vgs) for different lg of both sm and cgaa mosfets. the dm-cgaa mosfets are showing a significant improvement in drive current as compared to sm-cgaa mosfets. in fig. 2, lg varies from 28 nm to 70 nm and we can observe from the figure that a decrease in lg results a shift in the characteristics. the on-state current (ion) increases dramatically as lg decreases to below 30 nm in comparison to others. as channel length decreases, it gives rise to high drain current because of the relation id1/l. fig. 3 represents the id-vgs characteristic for different values of metal gate work function (φm) for both sm and dm-cgaa mosfets. the work function is varied from 4.6 ev to 5.1 ev for sm cgaa and φm2 from 4.2 ev to 4.5 ev with φm1=4.6 ev at vds=50 mv (sub-threshold region of operation). in case of dm-cgaa, the φm2 is varied in such a way that it has to satisfy the design condition, i.e., φm1>φm2. the results illustrate that the off-state leakage current (subthreshold performance) of the device improves for higher values of metal gate work function. higher the the φm increases 640 b. jena, k. p. pradhan, p. k. sahu, s. dash, g. p. mishra, s. k. mohapatra threshold voltage that reduces leakage current and improves the subthreshold behavior of the device. (a) (b) fig. 2 drain current (id) in linear scale as a function of gate to source voltage (vgs) for vds=50 mv with variation in lg (28 nm to 70 nm) (a) sm-cgaa (φm=4.6 ev) (b) dm-cgaa (φm1=4.6 ev, φm2=4.4 ev) (a) (b) fig. 3 drain current (id) in log scale as a function of the gate to source voltage (vgs) for vds=50 mv for different φm (a) sm-cgaa (b) dm-cgaa fig. 4 (a) and (b) reveal the id dependency on silicon body thickness (tsi) of both sm and dm cgaa mosfets. the characteristic of ioff is also influenced by tsi, which is cleared from fig. 4. as the silicon film gets thinner, there is a significant improvement in leakage current because no further leakage path is available far from the gate. the dm devices show a little higher ioff than sm device cases, but they predict higher drive current (ion) as compared to sm counterparts, which is verified from fig. 2. transconductance (gm) as a function of id for both sm and dm-cgaa mosfets are presented in fig. 5(a) and (b) respectively. from the figure, it is clear that as the channel length decreases the gm value is increasing because of high drain current. the high gm will further enhance the transconductance generation factor (tgf=gm/id) which is the requirement for the realization of circuits operating at low supply voltage. by comparing fig. 5(a) and (b), the dm devices are superior to their sm counterpart. all the extracted and calculated values of dc performances are tabulated in table 1, and table 2, with the variation of silicon body thickness (tsi), and channel length (lg) of both sm and dm-cgaa mosfets. table 1 compares and analyzes the sensitivity of tsi cylindrical gate all around (gaa) to nanowire mosfet 641 on various important parameters like ion, ioff, and vth. we can well control the vth and sces like off state leakage current by reducing tsi with a little compromise in on-state current. hence, people always prefer a ultra-thin body (utb) fully depleted (fd) soi mosfet as the body is completely controlled by the gate and there is no leakage path far from the gate. however, by considering two different gate metals, we can drastically enhance the drive current of the devices. (a) (b) fig. 4 drain current (id) in log scale as a function of gate to source voltage (vgs) for vds=50 mv with variation in tsi (10 nm to 20 nm) (a) sm-cgaa (φm=4.6 ev) (b) dm-cgaa (φm1=4.6 ev, φm2=4.4ev) (a) (b) fig.5 gm as a function of id at vds=50 mv with variation in lg (a) sm-cgaa (φm=4.6 ev) (b) dm-cgaa (φm1=4.6 ev, φm2=4.4ev) table 2 summarizes the similar dc performances of both sm and dm devices for different values of channel lengths. it is clear from table 2 that while the gate length is reduced the analog performance like transconductance (gm) is increased because of high drain current for shorter gate length devices. however, the device having shorter lg is more prominent towards sces due to high ioff. table 1 dc performance measures with tsi variation at vds=50 mv sm-cgaa (φm=4.6ev) dm-cgaa (φm1=4.6ev, φm2=4.4ev) tsi (nm) ion (μa) ioff (pa) vth (v) ion (μa) ioff (na) vth (v) 10 3.99 1.27 0.40 4.04 0.71 0.28 15 8.31 7.27 0.40 8.71 3.69 0.245 20 11.4 9.70 0.38 13.1 29.2 0.21 642 b. jena, k. p. pradhan, p. k. sahu, s. dash, g. p. mishra, s. k. mohapatra table 2 analysis of different parameters with lg variation at vds=50 mv sm-cgaa (φm=4.6ev) dm-cgaa (φm1=4.6ev, φm2=4.4ev) lg (nm) ion (μa) ioff (pa) vth (v) ion (μa) ioff (pa) vth (v) 28 3.68 2.44 0.382 4.04 711 0.28 40 3.67 0.114 0.424 3.85 7.21 0.42 55 3.40 0.0386 0.431 3.63 0.838 0.45 70 3.16 0.0248 0.432 3.30 0.360 0.455 5. conclusion a cylindrical gate all around (gaa) with gate engineering, i.e., single gate material (sm) and two different gate electrode (dm) is explored and the performance evaluation is carried out with extensive device simulation by sentaurus tm simulator. the sensitivity of device parameters like tsi, φm, and lg on various dc performances are systematically presented. improvement in device performance for low standby operating power (lstp) applications can be achieved with reduced in body thickness and higher gate work function. the subthreshold leakage current is significantly improved when the device approaches to the nanowire, i.e., tsi=10 nm, and for higher φm values. similarly, continuous miniaturization of lg is required for getting high ion and gm. the dm-cgaa shows a higher drive current as compared to sm counterpart with little compromise in off state leakage current. hence, an appropriate selection of the silicon thickness, and metal gate work function give rise to an optimum threshold voltage at a given channel length and drain bias. references [1] k. k. young, "short-channel effect in fully depleted soi mosfets", ieee trans. electron devices, vol. 36, no. 2, pp. 399–402, 1989. [2] s. bangsaruntip, g. m. cohen, a. majumdar, and j. w. sleight, "universality of short-channel effects in undoped-body silicon nanowire mosfets", ieee electron device lett., vol. 31, no. 9, pp. 903–905, 2010. [3] t. skotnicki, j. a. hutchby, t. j. king, h. s. p. wong, and f. boeuf, "the end of cmos scaling: toward the introduction of new materials and structural changes to improve mosfet performance", ieee circuits devices mag., vol. 21, no. 1, pp. 16–26, 2005. [4] j. p. colinge, "multiple-gate soi mosfets", solid. state. electron., vol. 48, no. 6, pp. 897–905, 2004. [5] l. chang, y. c. y. choi, d. ha, p. ranade, s. x. s. xiong, j. bokor, c. hu, and t. j. king, "extremely scaled silicon nano-cmos devices", in proceedings of the ieee, vol. 91, no. 11, pp. 1860–1873, 2003. [6] v. m. srivastava, k. s. yadav, and g. singh, "design and performance analysis of double-gate mosfet over single-gate mosfet for rf switch", microelectronics j., vol. 42, no. 3, pp. 527–534, 2011. [7] j. colinge, "from gate-all-around to nanowire mosfets", in proceedings of the international semiconductor conference, cas 2007, vol. 1, pp. 11–17. [8] k. p. pradhan, s. k. mohapatra, p. k. sahu, and d. k. behera, "impact of high-k gate dielectric on analog and rf performance of nanoscale dg-mosfet", microelectronics j., vol. 45, no. 2, pp. 144– 151, 2014. [9] s. k. mohapatra, k. p. pradhan, l. artola, and p. k. sahu, "estimation of analog/rf figures-of-merit using device design engineering in gate stack double gate mosfet", mater. sci. semicond. process., vol. 31, no. 0, pp. 455–462, 2015. [10] s. k. mohapatra, k. p. pradhan, and p. k. sahu, "resolving the bias point for wide range of temperature applications in high-k/metal gate nanoscale dg-mosfet", facta universitatis series: electronics and energetics, vol. 27, no. 4, pp. 613–619, 2014. cylindrical gate all around (gaa) to nanowire mosfet 643 [11] t.-k. chiang and j. j. liou, "an analytical subthreshold current/swing model for junctionless cylindrical nanowire fets (jlcnfets) ", facta universitatis series: electronics and energetics, vol. 26, no. 3, pp. 157–173, 2013. [12] s. k. gupta and s. baishya, "modeling of cylindrical surrounding gate mosfets including the fringing field effects", j. semicond., vol. 34, no. 7, pp. 1–6, 2013. [13] m. r. kumar, s. k. mohapatra, k. p. pradhan, and p. k. sahu, "a simple analytical center potential model for cylindrical gate all around (cgaa) mosfet", j. electron devices, vol. 19, pp. 1648–1653, 2014. [14] h. abd-elhamid, b. iñiguez, d. jiménez, j. roig, j. pallarès, and l. f. marsal, "two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around mosfet", solid. state. electron., vol. 50, no. 5, pp. 805–812, 2006. [15] r. gautam, m. saxena, r. s. gupta, and m. gupta, "gate all around mosfet with vacuum gate dielectric for improved hot carrier reliability and rf performance", electron devices, ieee trans., vol. 60, no. 6, pp. 1820–1827, 2013. [16] a. cerdeira, m. estrada, j. alvarado, i. garduño, e. contreras, j. tinoco, b. iniguez, v. kilchytska, and d. flandre, "review on double-gate mosfets and finfets modeling", facta universitatis series: electronics and energetics, vol. 26, no. 3, pp. 197–213, 2013. [17] y. pratap, p. ghosh, s. haldar, r. s. gupta, and m. gupta, "an analytical subthreshold current modeling of cylindrical gate all around (cgaa) mosfet incorporating the influence of device design engineering", microelectronics j., vol. 45, no. 4, pp. 408–415, 2014. [18] t. k. chiang, "a compact model for threshold voltage of surrounding-gate mosfets with localized interface trapped charges", ieee trans. electron devices, vol. 58, no. 2, pp. 567–571, 2011. [19] l. zhang, c. ma, j. he, x. lin, and m. chan, "analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around mosfet", solid. state. electron., vol. 54, no. 8, pp. 806–808, 2010. [20] d. sharma and s. k. vishvakarma, "precise analytical model for short channel cylindrical gate (cylg) gate-all-around (gaa) mosfet", solid. state. electron., vol. 86, pp. 68–74, 2013. [21] i. ferain, c. a. colinge, and j. colinge, "multigate transistors as the future of classical metal–oxide– semiconductor field-effect transistors", nature, vol. 479, pp. 310–316, 2011. [22] http://www.synopsys.com/, "sentaurus tcad user’s manual", in proceedings of the synopsys sentaurus device, pp. 191–403. [23] a. tsormpatzoglou, d. h. tassis, c. a. dimitriadis, g. ghibaudo, g. pananakakis, and r. clerc, "a compact drain current model of short-channel cylindrical gate-all-around mosfets", semicond. sci. technol., vol. 24, no. 7, p. 75017, 2009. instruction facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. 137 144 doi: 10.2298/fuee1701137k modified internal model control for a therapeutic robot  miloš d. kostić 1 , miroslav r. mataušek 2 , dejan b. popović 2,3 1 tecnalia, san sebastian, spain 2 university of belgrade, faculty of electrical engineering, belgrade, serbia 3 institute of technical sciences of the serbian academy of sciences and arts, belgrade, serbia abstract. we present the use of the modified internal model controller (mimc) and the “probability tube” (pt) action representation for robot-assisted upper extremities training of hemiplegic patients. the robot-assisted training session has two phases. during the first "demonstration" phase the robot learns from the therapist the target path through examples. in the second "exercise" phase the robot assists a patient to follow the target path. during this process, the control limits the interface force between the robot and the hand to be below the preset threshold (f = 50 n). the system allows the assessment of the range of movement, the positional error between the target and the reached position, the amount of added assistance (the interface force between the hand and the robot). we demonstrate the operation in two hemiplegic patients. the patients and therapist suggested after the tests that the new system is straightforward and intuitive for clinical applications. key words: stroke, disability, assistant robot, modified internal model control, assessment 1. introduction intensive repetition of functional movements is proven to be an efficient method of motor control relearning during the neurorehabilitation process [1]. robotic devices are inherently well suited for repetitive tasks as well as for providing the quantitative assessment of performed movements, which is why they are becoming the preferred tools to support such therapeutic modality [2]. two types of robot assistants are dominantly used for intensive exercise: 1) devices that assist the end-point movement of the arm and interface the patient at hand (e.g., mit-manus [3], braccio di ferro [4]) and 2) exoskeleton robots that assist individual arm joints and interface the arm at multiple points (e.g., armin [5], cozens arm robot [6]).  received may 24, 2016; received in revised form june 15, 2016 corresponding author: dejan b. popović institute of technical sciences of sanu, kneza mihaila 35, 11000 belgrade, serbia (e-mail: dbp@etf.rs) 138 m. d. kostić, m. r. mataušek, d. b. popović depending on the chosen therapy modality the robotic device can support, assist, resist or even perturb the movement of the arm/hand. to do so, robot assistants apply sophisticated methods for actuator control in position, velocity or impedance space. the rehabilitation gain is maximized when the device adapts to the patient’s performance in a manner which encourages the efforts, e.g., by providing "assistance-as-needed" or "faded guidance" [5 9]. to implement these complex assistance schemes the “haptic” approach, where the device acts on the patient with the force determined by the computer model, is frequently employed in the control of robot assistants [4, 5, 10, 11]. the essential elements of haptic control that are used in current robot assistants can be described with the following two equations: motor intrinsic haptict (t) = t (q,q,q,p) + t (t) (1) t haptic haptict (t) = j(q) f (t) (2) where [ q,q,q  ] are kinematic variables and p is a set of unknown parameters in the nonlinear model of intrinsic torque, tintrinsic [4]. this torque relates to inertia, dissipative friction, and external forces (i.e., gravity). j(q) is the jacobean of the device's geometry, and fhaptic is the targeted interface force between the arm and the apparatus. the application of such a system requires an adequate nonlinear model and experimental assessment of unknown parameter p for an extensive range of operating conditions. a difficulty is that on-line compensation of the intrinsic dynamics is highly complex [4]. another major practical problem for the implementation is the selection of the target trajectory for the hand that the robot needs to assist. we show here one possible method for solving two problems: 1) how to select a target trajectory which is suited to the current patient needs, and dynamically changing abilities; and 2) how can this trajectory be translated to the controller of a robot to is used in daily clinical work? we demonstrate a solution for both tasks in the case of point-to-point movements. the demonstration is presented with a new 3d robot prototype (r3-beg), shown in fig. 1. the assumed principle for the operation of the r3-beg is: "teach-and-repeat" scenario [2, 7, 12], which is adopted in current clinical practice and present in some commercial devices [13]. the "teach-and-repeat" consists of the "demonstration" phase, in which the therapist and patient hold the endpoint of the robot, and the therapist selects a target trajectory based on heuristics; and the "exercise" phase, in which the robot assists the arm to move along the preferred trajectory with the force constraint (threshold maximum force) [13]. the following elements of the system are new: 1) the interface between the therapist, the patient and the robot used during the demonstration phase; 2) the action representation which translates the captured kinematics to the controller; 3) integration of the natural variability of the therapist’s movements into the target trajectory [14, 15]; 4) two-level control comprising at higher level velocity the set points selection in each movement phase, based on the “probability tube” (pt) action representation and at the low-level control implementation of the modified internal model control (mimc) [16, 17] to ensure offset-free following of the set point; and 5) motivating feedback based on the online assessment of the patient’s performance in the “exercise phase” (fig. 1). the presentation modified internal model control for a therapeutic robot 139 starts with the description of the robot and controller, and continues to the presentation of tests in two post-stroke patients. 2. the r3-beg robot assistant the r3-beg combines a two-segment planar manipulandum (arm) and a vertical slider (fig. 1). following the analogy with the patient’s arm, the joints were named shoulder (s) and elbow (e). fig. 1 the r3-beg robot for the arm exercise (left panel). the sketch of the robot arm showing the task (top left panel) and feedback presented to the therapist (bottom right panels). the handle (fig. 1) is instrumented by a set of force transducers allowing the estimation of the size and direction of the force acting at the handle in the plane orthogonal to the handle. this handle serves as the interface between the patient and the robot. the top part (extension) of the same handle is the interface between the therapist and the robot. this configuration allows the therapist to set the target trajectory by moving the end-point of the robot while the patient is holding the same handle. the force sensor is used in the second phase as the source of feedback for controlling the maximum assistive force constraint and for assessment of the added amount of assistance. high level control is based on methods described in [18], which suggested high rehabilitation potential, but required a sophisticated haptic platform. here the pt is used as a lookup table to determine velocity set point, based on current movement phase and performance. this can be presented as: 1k),i, k )i),t(v(pt1 )i),t(v(pt(1pt)t(refv    (3) 140 m. d. kostić, m. r. mataušek, d. b. popović where v(t) is current acceleration and i current phase. the factor k determines the level of allowed variability and is set up by the therapist. the low level control is based on two single-input-single-output mimc linear digital controllers [17] to control the shoulder and the elbow of the system. the essential characteristics of the mimc design and tuning concept from [18] are: it is well suited to exploit the benefits of prior knowledge and experience gained from the open-loop dynamics of the plant; the control system structure is directly obtainable from the model used to approximate process dynamics; a small number of tuning parameters, with clear meaning, followed by simple tuning rules, enough easy to apply. this concept also allows scalability of the presented solution, as it is suitable for designing multiple-input multipleoutput (mimo) neural network (nn) digital controllers [19]. measured variables on the plant are the elbow and shoulder positions, pe(t) [rad] and ps(t) [rad], however, the controlled variables consist of the velocity of the elbow ve(t) [rad/s] and the velocity of the shoulder vs(t) [rad/s], which are obtained from e s e s e s sv (kt )=(p (kt ) p ((k 1)t ))/t  (4) s s s s s s sv (kt )=(p (kt ) p ((k 1)t ))/t  (5) their dynamic characteristics are defined by the elbow velocity model gmve(s) and the shoulder velocity model gmvs(s), which are obtained from open loop step response test. models gmve(s) and gmvs(s)are defined by equations 6 and 7: 1stζ2st ek (s)g ee 22 e sl e mve e    , (6) 1stζ2st ek (s)g ss 22 s sl s mvs s    (7) where ke = 0.00024, ks = 0.00023, le = 0.07, ls = 0.1, te = 0.04, ts = 0.08, ζe = ζs = 0.7. fig. 2 mimc controller block diagram, modified from fig. 2 in [17] the velocity models gmve(s) and gmvs(s) were used to design and tune mimc velocity controllers, defined by the structure presented in fig. 2, modified from [17]. the elbow mimc velocity controller is defined by: 2 4 re e le 0.4z f (z)º1, f (z) = , g (z) = z z-0.6       (8) modified internal model control for a therapeutic robot 141 -1 2 m0e 2 p (z) 1 z 1.3205z + 0.4966 = z 0.00024 0.1761z  (9) where z -1 represents the unite delay operator, z -1 = e− sts . the shoulder mimc velocity controller is defined by 2 5 rs s ls 0.2z 0.2z f (z) = , f (z) = , g (z) = z z 0.8 z-0.8        (10) -1 2 m0s 2 p (z) 1 z 1.6522z + 0.7047 = z 0.00023 0.0525z  (11) both mimc controllers are implemented with the sample time ts = 0.02 s. we validated linear models of r3-beg joints. the parameters of the models were estimated based on recordings of the open-loop step responses. the set-points to the elbow and shoulder controllers of the r3-beg are defined in the phase-plane by the procedure described in kostić et al. [14, 15]. however, to test the closed-loop tracking performance of the low level control (mimc controllers equations 8-11), without the influence of higher level control algorithm, sinusoidal set-points defined in time were applied to the shoulder and the elbow control systems. results presented in fig. 3 were obtained for the control system defined in the loop with the mimc elbow velocity controller by equations 8 and 9. fig. 3 closed-loop responses for the elbow in the loop with mimc elbow controllers (8) and (9): model (red line), plant (black line) and set-point (blue line). 3 implementation of the r3-beg two hemiplegic patients signed the informed consent approved by the local ethics committee of the clinic for rehabilitation "dr miroslav zotović", belgrade, serbia. patient p1 had a small range of movement and was highly spastic while the patient p2 had a larger range of motion and less pronounced spasticity. the level of disability was assessed by an experienced clinician before the beginning of the tests (the ashworth spasticity scale (as), the action research arm test (arat), and the fugl-meyer (fm) motor test for upper extremities). 142 m. d. kostić, m. r. mataušek, d. b. popović the session with r3-beg followed the previously described two-phase procedure. in the "demonstration phase", the therapist "presented" the movement to the patient and the robot by manipulating the handle while the patient held the instrumented handle and was instructed not to resist the imposed movement between the starting and end points. the robot was passive (decoupled motors), and sensors captured movement kinematics and interface force. each movement was repeated several times to create the action representation using a procedure described in detail elsewhere [argall et al., 2009). the obtained pt provided set-points to the elbow and shoulder mimc controllers of the r3beg in the phase-plane while the maximal force of assistance was defined as maximal interface force exerted by the therapist. in the "exercise phase", the robot assisted a patient to perform the desired point-topoint movement. there were two different movements, one in the ipsilateral direction and one in the contralateral direction. the starting position and the target were marked with a green and a red circle (diameters d = 4 cm), respectively. the handle was instrumented with a laser pointer which projected the position of the handle to allow the patient to know the position of the handle. data presented in figure 4 illustrate the performance of patients p1 and p2, respectively. the efficacy of the robotic intervention is documented by two objective measures: 1) the euclidian distance between the reached position and the target point, which relates to the range of movement, and 2) the interface force between the hand and the r3-beg, compared to the amount of provided assistance. these metrics were selected based on the recommendations of the european scientific community [19]. fig. 4 trajectories achieved by the patients p1 (severe spasticity left panels) for the two target points. f is the force. d is distance between the end point of the trajectory and the target t. right panels show the performance of patient p2 (mild spasticity) as shown in fig. 4 (left panels), the patient p1 was not able to completely perform the task and could not reach the target point in the case in which the handle needed to be moved to the contralateral side of his body (the distance between the endpoint of the movement and the target was 9.6 cm). however, he encountered fewer problems with the radial movement in the ipsilateral direction (d = 2.9 cm). the interface force indicates that the robot was assisting the movement all along the trajectory. the robot assisted the movement with significant force during the last 25 % of the movement (f ≈ 30 n). the force was gradually increasing to about 10 n during the first 75% of the movement. this result is by the patent’s impairment (constraints introduced by spasticity and decreased the range of movement) fig. 4 (right panels) illustrates the modified internal model control for a therapeutic robot 143 performance of the patient p2 characterized with mild spasticity. in this case, the interface force was substantially smaller compared with the interface force estimated during the tests with patient p1. the distance between the endpoint and the target was only 2 cm and an interface force never reached f = 15 n. this indicates that the patent used the robotic guidance to compensate for the lack of motor control, rather than the compromised range of motion, which supports the reported patient impairment. 4 conclusions we developed a control method for a rehabilitation robot. the new system was proved to be simple for tuning and implementation in the clinical environment. the novel "teachand-repeat" method for high-level control, described in [14,15] implemented in this scenario was found to be useful for translating the therapist's skills and experience to the robot-assisted therapy. the signals from sensors used for control allow direct assessment of the differences between passive and active arm movements (range and smoothness of the movement and required force assistance). the force controlled interface (haptics) also allows the setup of the tasks that need to be trained to improve the performance. acknowledgement: the work on this project was partly supported by the project no rs35003, ministry of education, sciences and technological development of serbia. references [1] g. kwakkel, "intensity of practice after stroke: more is better", schweizer archiv für neurologie und psychiatrie, vol. 160.7, pp. 295-298, 2009. [2] t. nef, m. mihelj, and r. riener, "armin: a robot for patient-cooperative arm therapy", medical & biological engineering & computing, vol. 45(9), pp. 887-900, 2007. [3] n. hogan, h. i. krebs, j. charnnarong, p. srikrishna and a. sharon, "mit-manus: a workstation for manual therapy and training i", in proceedings of the ieee international workshop robot and human communication, 1992, pp. 161-165. [4] m. casadio, v. sanguineti, p. g. morasso, and v. arrichiello, "braccio di ferro: a new haptic workstation for neuromotor rehabilitation", technology and health care, vol. 14(3), pp. 123-142, 2006. [5] t. nef, and r. riener, "armin-design of a novel arm rehabilitation robot", in proc. of the 9th ieee international conference on rehabilitation robotics, 2005, pp. 57-60. [6] j. a. cozens, "robotic assistance of an active upper limb exercise in neurologically impaired patients", rehabilitation engineering, ieee transactions on, vol. 7(2), pp. 254-256, 1999. [7] l. marchal-crespo, and d. j. reinkensmeyer, "review of control strategies for robotic movement training after neurologic injury", journal of neuroengineering and rehabilitation, vol. 6(1), pp. 20, 2009. [8] m. casadio, p. giannoni, l. masia, p. g. morasso, g. sandini, v. sanguineti, v. squeri, and e. vergaro, "robot therapy of the upper limb in stroke patients: rational guidelines for the principled use of this technology", functional neurology, vol. 24 (4), pp. 195-202, 2009. [9] h. i. krebs, j. j. palazzolo, l. dipietro, m. ferraro, j. krol, k. rannekleiv, b. t. volpe, and n. hogan, "rehabilitation robotics: performance-based progressive robot-assisted therapy", autonomous robots, vol. 15 (1), pp. 7-20, 2003. [10] r. q. van der linde, p. lammertse, e. frederiksen, and b. ruiter, "the hapticmaster, a new high-performance haptic interface", in proc. eurohaptics, 2002, pp. 1-5. [11] r. loureiro, f. amirabdollahian, m. topping, b. driessen, and w. harwin, "upper limb robot mediated stroke therapy: gentle/s approach", autonomous robots, vol. 15 (1), pp. 35-51, 2003. 144 m. d. kostić, m. r. mataušek, d. b. popović [12] j. l. emken, s. j. harkema, j. a. beres-jones, c. k. ferreira, and d. j. reinkensmeyer, "feasibility of manual teach-and-replay and continuous impedance shaping for robotic locomotor training following spinal cord injury", biomedical engineering, ieee transactions on, vol. 55 (1), pp. 322-334, 2008. [13] b. d. argall, s. chernova, m. veloso, and b. browning, "a survey of robot learning from demonstration", robotics and autonomous systems, vol. 57 (5), pp. 469-483, 2009. [14] m. d. kostić, m. b. popović, and d.. b. popović, "a method for assessing the arm movement performance: probability tube", medical & biological engineering & computing, vol. 51 (12), pp. 1315-1323, 2013. [15] m.d. kostić, ;m. d. popović, and d. b. popović, "the robot that learns from the therapist how to assist stroke patients", new trends in medical and service robots. springer international publishing, pp. 1729, 2014. [16] m. r. mataušek and d. m. stipanović, "modified nonlinear internal model control", control and intelligent systems, vol. 26 (2), pp. 57-63, 1998. [17] m.r. mataušek, a. d. mićić, and d. b. dacić, "modified internal model control approach to the design and tuning of linear digital controllers", international journal of systems science, vol. 33 (1), pp. 67-79, 2002. [18] m. r. mataušek, d. m. miljković, and b. i. jeftenić, "nonlinear multi-input-multi-output neural network control of dc motor drive with field weakening", ieee transactions on industrial electronics, vol. 45 (1), pp. 185-187, 1998. [19] "cost action td1006", http://www.rehabilitationrobotics.eu/2013. facta universitatis series: electronics and energetics vol. 33, no 4, december 2020, pp. 499-529 https://doi.org/10.2298/fuee2004499d © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd is this artificial intelligence?  vladan devedžić university of belgrade, faculty of organizational sciences, belgrade, serbia abstract. artificial intelligence (ai) has become one of the most frequently used terms in the technical jargon (and often in not-so-technical jargon). recent advancements in the field of ai have certainly contributed to the ai hype, and so have numerous applications and results of using ai technology in practice. still, just like with any other hype, the ai hype has its controversies. this paper critically examines developments in the field of ai from multiple perspectives – research, technological, social and pragmatic. part of the controversies of the ai hype stem from the fact that people use the term ai differently, often without a deep understanding of the wider context in which ai as a field has been developing since its inception in mid 1950s. key words: intelligence, artificial intelligence (ai), technology, applications, reality check. 1. introduction artificial intelligence (ai) is seeing an unprecedented rise in popularity for more than a decade. several traditional subfields of ai have developed almost to the level of disciplines per se, and there are more and more practical applications of different technologies that have been developing for years under the ai umbrella. this has affected many sectors, and has attracted attention of not only technology developers, but also of educators, social scientists, artists, governments, media and wider public. on the other hand, there are many apparently simple questions that are still waiting for appropriate answers. what exactly is ai, in the first place? how intelligent is an intelligent system? what are the criteria to call a system an ai system, or an intelligent system? in order to set the stage for discussing these questions further, a brief review of some real-world examples of systems and applications called ai is a good starting point. spam filtering is one of the commonly known examples of applying ai in email services, but it‘s less commonly known that smart email categorization and labelling is also aipowered [1]. even fewer email users are aware of ai behind smart replies, nudging which emails they haven‘t answered or ignored. received august 20, 2020 corresponding author: vladan devedžić university of belgrade, faculty of organizational sciences, jove ilića 154, 11000 belgrade, serbia e-mail: devedzic@gmail.com 500 v. devedzic ai voice-to-text apps for smartphones, like speechnotes 1 and voice notebook 2 , can convert speech to text and can also convert an audio file to text. the same technology powers smart personal assistants, like google assistant 3 , alexa 4 and cortana 5 , that can perform internet searches, set reminders, integrate with your calendar, create to-do lists, order items online and answer questions (via internet searches). when google maps recommends the fastest route through a city on someone's smartphone, it intelligently takes into account not only the traffic speed, but also the road construction, accidents and different user-reported conditions [2]. likewise, ride-hailingand-sharing apps like uber can accurately calculate the price of a ride, predict the passenger's demands, determine optimal pick-up locations and even compute the estimated time for food delivery [3]. some will be surprised to learn that ai autopilots on commercial flights are in charge of flying the aircraft for most of the flight time – humansteered times are typically just during takeoff and landing [4]. and that easily shifts attention to self-driving cars, buses and trucks, a largely debated ai topic that until very recently referred only to experimentation that used to spark our imagination, but nowadays is slowly becoming a reality [5]. these vehicles are smart enough to drive at an optimal speed, to follow the signs, to pay attention to the stop lights, pedestrians and other cars, and safely bring the passengers and loads to their destinations. using ai-enabled technology in military applications has always been one of the driving forces in developing ai further. typical current applications include unmanned (selfdriving) vehicles, combat robots, drone swarms and autonomous action [6], [7]. they allow for running dangerous, suicidal missions, and have opened a whole new line of military strategy and tactics development. a good recent example that uses the ai techniques, called adversarial machine learning [8], is model turtle created at mit – a robot that looks like a turtle to humans, but can easily fool other ai-powered robots and surveillance drones, to which it looks like a rifle [9]. this leads to a series of adversarial algorithmic camouflage tactics, like hiding military planes, tanks, and other objects, ―blinding‖ missiles, and so on. image recognition and face recognition systems have become quite popular. facebook 6 highlights faces on an uploaded image and suggests the user friends to tag, using ai to recognize faces. snapchat 7 goes into a slightly different direction – it can also track facial movements. similarly, instagram 8 uses ai to identify the contextual meaning of emoji. amazon rekognition 9 can recognize faces of celebrities, and so can microsoft azure custom vision 10 image recognition cognitive service. google cloud vision 11 and amazon rekognition are currently among the leaders of general object recognition and content 1 https://speechnotes.co/ 2 https://voicenotebook.com/ 3 https://assistant.google.com/ 4 http://alexa.amazon.com/spa/index.html 5 https://support.microsoft.com/en-us/help/17214/windows-10-what-is 6 https://www.facebook.com/ 7 https://www.snapchat.com/ 8 https://www.instagram.com/ 9 https://aws.amazon.com/rekognition/ 10 https://azure.microsoft.com/en-us/services/cognitive-services/computer-vision/ 11 https://cloud.google.com/vision/ https://speechnotes.co/ https://voicenotebook.com/ https://assistant.google.com/ http://alexa.amazon.com/spa/index.html https://support.microsoft.com/en-us/help/17214/windows-10-what-is https://aws.amazon.com/rekognition/?blog-cards.sort-by=item.additionalfields.createddate&blog-cards.sort-order=desc https://nordicapis.com/digitize-your-notes-with-microsoft-vision-api/ https://nordicapis.com/digitize-your-notes-with-microsoft-vision-api/ https://cloud.google.com/vision/docs/drag-and-drop?hl=en https://aws.amazon.com/rekognition/?blog-cards.sort-by=item.additionalfields.createddate&blog-cards.sort-order=desc https://aws.amazon.com/rekognition/?blog-cards.sort-by=item.additionalfields.createddate&blog-cards.sort-order=desc https://speechnotes.co/ https://voicenotebook.com/ https://assistant.google.com/ http://alexa.amazon.com/spa/index.html https://support.microsoft.com/en-us/help/17214/windows-10-what-is https://www.facebook.com/ https://www.snapchat.com/ https://www.instagram.com/ https://aws.amazon.com/rekognition/ https://azure.microsoft.com/en-us/services/cognitive-services/computer-vision/ https://cloud.google.com/vision/ is this artificial intelligence? 501 detection on images. google lens 12 brings up relevant information related to objects it identifies using visual analysis, fig. 1. fig. 1 the photo of the author's desk taken by the google lens app run by his smartphone (left) and part of the information shown by the app (correctly except for the color) as a result of the ai-based image analysis (right) in the banking sector, fraud detection platforms based on machine learning (ml), such as the one created by the teradata 13 firm, are in high demand [10]. they are capable of recognizing potential fraud transactions by differentiating between acceptable deviations from the norm and critical ones. acceptable deviations are treated as false positives, so the system can ―learn‖ from its mistakes. the data used to train the ml model include recent frequency of transactions, transaction size, geolocational data, the kind of retailer involved, etc. so, what is it in these (and many, many more) systems and applications that is most often called ai? 2. defining ai? the question mark in the subheading is intentional. ai is notoriously hard to define – in fact, there are many definitions and none of them is dominant in the ai community; p. marsden has compiled a list of a few dozens of popular definitions [11]. extracting and mixing bits and pieces from several of them, in this article ai is understood primarily as technology capable of exhibiting skills typically associated with human intelligence, such as the ability to perceive, learn, reason, abstract (classify, conceptualize and generate rules) and act autonomously. it is also the science and engineering of creating such technology, where intelligence is the computational part of it that enables machines to exhibit behaviors and actions that would be called intelligent if a human were so behaving, i.e. that would require intelligence if they were done by humans. an important characteristic of an ai system is that it can figure out things for itself, and then act based on that information. the most popular textbook on ai [12] stresses a 12 https://lens.google.com/ 13 https://www.teradata.com/ https://lens.google.com/ https://lens.google.com/ https://www.teradata.com/ 502 v. devedzic variation of that characteristic: ―ai is the study of agents that receive percepts from the environment and perform actions… a rational agent is one that acts so as to achieve the best outcome or, when there is uncertainty, the best-expected outcome,‖ i.e. has the ability to achieve goals in the world in an optimal way. there are at least two distinct points in this understanding/description: (a) ai is technology, more precisely computational technology; and (b) it behaves and acts in a way that is typically associated with human intelligence. what makes things slip away in all attempts to define ai is not part (a); it is part (b). 2.1. what is intelligence? the much-quoted line of r.j. sternberg that ―viewed narrowly, there seem to be almost as many definitions of intelligence as there were experts asked to define it‖ [13] reveals in a concise way that all attempts to define intelligence are inherently controversial. and, just like in the case of defining ai, there are collections of definitions (e.g., [14]) and broad statements and commentaries that outline only vague conclusions about the nature of intelligence, its origins and current scientific evidence. this article adopts two broad statements of this kind, which describe intelligence as: ―a very general mental capability that, among other things, involves the ability to reason, plan, solve problems, think abstractly, comprehend complex ideas, learn quickly and learn from experience. it is not merely book learning, a narrow academic skill, or test-taking smarts. rather, it reflects a broader and deeper capability for comprehending our surroundings – ―catching on,‖ ―making sense‖ of things, or ―figuring out‖ what to do.‖ [15] ―ability to understand complex ideas, to adapt effectively to the environment, to learn from experience, to engage in various forms of reasoning, to overcome obstacles by taking thought... concepts of ―intelligence‖ are attempts to clarify and organize this complex set of phenomena.‖ [16] note, however, that all such statements and attempts to define (or, at least, characterize) intelligence can lead to a vicious circle. one now needs to define each of these abilities, like understanding, thinking, reasoning, learning, adapting, etc. this is equally difficult as defining intelligence, since ―although considerable clarity has been achieved in some areas, no such conceptualization has yet answered all the important questions, and none commands universal assent‖ [16]. moreover, there can be substantial individual differences in performance related to these complex abilities, and they can vary even for the same person in different domains, under different circumstances, and so on. mechanisms to measure this performance do exist (e.g., iq), but judgement can be based on different criteria. 2.2. how intelligent is an ai system? given the extremely high complexity of intelligence itself and of the abilities associated with it, developers of ai systems typically focus only on some narrow aspects of intelligence or to a specific dimension of intelligence, such as knowledge representation, reasoning, learning, and image analysis and interpretation. unfortunately, this can lead to big differences in judging how intelligent is an ai system. is this artificial intelligence? 503 2.2.1. the turing test as early as 1950, alan turing suggested that a program/machine should pass a behavioral intelligence test if it was to be called intelligent [17]: it should have a 5-minute typed-messages conversation with a human interrogator, and the interrogator then has to guess if the conversation was with a program or with a person; the program/machine passes the test if for at least 30% of the time the interrogator believes she/he is making this conversation with a person [12]. the modern-time interpretation of the turing test [12] is that such a program/machine should be able to communicate successfully with the interrogator using a natural language, should be capable of representing and storing information and knowledge about what it hears and using that knowledge for reasoning when answering questions and drawing conclusions. in addition, it should be able to learn new knowledge and patterns and to adapt to new situations, as well as to perceive objects using its sensory input and manipulate the objects accordingly (robotics). ever since the turing test was proposed, it has created intense debates. philosophers have argued that there are things that machines cannot do, others have cited mathematical proofs that some questions are in principle unanswerable by formal systems, and some strongly support the stance that human intelligence is much too complex to be captured by machines. however, in recent years there have been several announcements about ai systems passing the turing test [18], [19], [20]. these typically initiate counter-arguments and stay confined to academic circles; so far, there has been no much reaction from technologists. 2.2.2. weak ai vs. strong ai weak ai systems are those that can act as if they were intelligent, i.e. they can simulate human cognitive function. they can only appear to think, but definitely lack consciousness. they can follow certain rules and pre-programmed behaviors – even complex ones – but cannot do anything beyond these rules and behaviors. for example, a chess-playing program cannot be used as a personal assistant and vice versa. as j. searle puts it [21]: ―according to weak ai, the principal value of the computer in the study of the mind is that it gives us a very powerful tool. for example, it enables us to formulate and test hypotheses in a more rigorous and precise fashion. but according to strong ai, the computer is not merely a tool in the study of the mind.‖ in contrast to weak ai, the hypothesis of strong ai is that an ai system should actually have human cognitive abilities and states, not just simulate them. strong ai is not about building tools that help test psychological explanations; it is about building systems that ―are themselves the explanations‖ [21]. in other words, according to strong ai, intelligent programs should have their own autonomous perception, beliefs, emotions, and intentions; they should be minds. current systems called ―ai systems‖ are typically developed with the weak ai hypotheses in mind [12]. developers are happy if their programs work, and do not care much if people call them real intelligence or just simulated one. a related problem is the level of sophistication of an ai system. current ai systems can easily beat even the best human players in computer games or in the games of chess and go, but can neither understand nor feel the meaning of fairy tales and stories for young children [22], let alone capture their bottom-lines and morals. 504 v. devedzic 2.2.3. ai effect critics of weak ai often discount a successful ai technology with not viewing it as being real intelligence, regardless of the fact that it was once considered ai [23]. this is called ai effect: before the technology becomes part of everyday life, i.e. before it comes out from the confines of ai research labs, it has a special aura; it looks magic and truly intelligent. once it is better understood by the majority and gets built into products and tools used by many, the thrill is gone – it loses the ‗ai‘ label and becomes just technology. as a side effect, advancements in technologies that have once lived under the ai umbrella sometimes make these technologies break away from the ‗ai‘ label and get rebranded: expert systems have come out of the ai auspices and become a technology per se, artificial neural networks are often called just neural networks, and everybody says just chatbots, not ai chatbots. some see the cause of ai effect in the difference between the strong ai and weak ai concepts [24]. those who are ready to remove the ‗ai‘ label from technology originating from ai research typically align themselves with the strong ai approach: if an ai problem has been solved, it‘s no longer ai; true ai is a problem that has not been solved yet. a possible way out is to take a different perspective: since ai today is typically weak ai, perhaps a down-to-earth question to ask is ―can a specific problem be solved with weak ai or not?‖ it is also a good idea to occasionally ―see the world differently‖ – what do researchers in other, more-or-less related disciplines, have to say about intelligence? 2.3. intelligence seen from different research perspectives there is a dichotomy in explaining ai from technological and other perspectives. while technology-centered ai development focuses on systems that work accurately and fast, have exciting functionality and demonstrate certain aspects of intelligent behavior, experts in other disciplines are more interested in advancing the understanding of the phenomenon of intelligence. 2.3.1. neuroscience neuroscientists have made some progress identifying various neurological factors relevant for intelligence [25]. it is now known that intelligence and functioning of the brain are related to the overall brain volume, cortical thickness, white matter volume, grey matter volume, white matter integrity, neural efficiency, etc. but it is also known that such factors are only partly responsible for differences in intelligence among different humans (as well as among different members of other species). popular techniques/technologies used in non-invasive scanning of human brain include electroencephalography (eeg), magnetic resonance imaging (mri), functional mri (fmri), etc. for example, recent uses of powerful mri scanners have enabled analysis of functional units inside the layers of the human cortex (responsible for high level of cognition) and seeing for the first time how information flows between collections of neurons in a live human brain [26]. note that this is extremely important for neural network research in ai – neural networks as we know them today are models based on never-proved assumptions of how neurons exchange information. moreover, such scanners have brought neuroscientists one step is this artificial intelligence? 505 closer to understanding of human memory. likewise, an analysis of over 18.000 mri scans of people over 44, paired with four cognitive tests from the uk biobank study has revealed that the brain size has only a minor correlation with intelligence, biological sex has no impact on intelligence, and intelligence is largely influenced by different brain regions [27]. note, however, that neuroscientists admit that although now we have considerably more evidence about how human brain functions and what regions of the brain are responsible for intelligence, we still don‘t know what intelligence really is; a lot of further research is needed to fully understand it. that‘s why some neuroscientists take a different approach. due to the fact that human brain is extremely complex, they make attempts to understand how the brain of simpler species works. for example, a notable success has been achieved with studying the brain of fruit flies (drosophila melanogaster) using electron microscopy – the entire brain of an adult female fly has been imaged at synaptic resolution [28]. however, a fact very relevant for ai research is that in spite of now having an unbiased mapping of synaptic connectivity of the fruit fly, synthesizing its brain – the size of a poppy seed – is not even at sight. 2.3.2. psychology research and experiments in cognitive psychology have led to theories about how humans represent knowledge and how they process it in order to make inferences and decisions, create explanations, analyze situations at hand, reach conclusions and so on. the knowledge represented pertains both to external world and to internal mental states, like beliefs, emotions, attitudes and desires [29]. information perceived from the world (both external and internal) gets encoded into mental representations and is either processed immediately, or is stored in memory for later retrieval and processing. there are several basic forms of mental representations: spatial (e.g., the placement of objects in a room), feature (such as dogs bark, can run, have four legs, are faithful,…), network (like irish setter is a setter, irish setter is red, irish setter has bird sense, irish setter is a dog, dog is an animal), and structured (like a plate is on the table, a drawer is under the table, the drawer is closed,…). these forms themselves have their structures. there are also specific processes associated with each form, capable of accessing and using information and knowledge represented within a specific form. for example, in the network representation example shown above, the is a relation between irish setter and dog enables accessing dog features indirectly and inferring that irish setter can bark. a powerful tool of human thought processes is abstraction. it enables ignoring some information (i.e., not representing it, abstracting it away). this is very important in terms of the efficiency of processing the information that did get stored within the representation – it can be found and accessed more quickly, since the search space is more compact without the information that got abstracted away. cognitive science lays the bridge between cognitive psychology and ai. it develops computational models of different forms of mental representations and their related processes. note, however, that these models only theoretically mimic human thought. in reality, we know very little about how knowledge is represented and processed in human brain [30], in spite of valuable recent discoveries like the one that has revealed the brain‘s code for facial identity [31]. researchers are only beginning to tackle important problems 506 v. devedzic like the relation between consciousness and intelligence [32] and the one between intentionality and intelligence [33]. 2.3.3. philosophy ever since the inception of ai, philosophers have been intrigued with it. the already mentioned work related to strong ai ([17], [21], [22]) is but a tiny bit of discussions on the topic. chapter 26 of [12] surveys philosophical pros and cons related to ai in much more details. some of the more recent considerations and debates in this area include v. vinge‘s notion of (technological) singularity [34], built upon the earlier i.j. good‘s concept of intelligence explosion [35]. essentially, singularity means that if humans can create intelligence smarter than their own, then it could do the same, only faster. the concept has been further explored by r. kurzweil [36], who projected that, given the pace of technological development, by mid 2040s global computing capacity will exceed the capacity of all human brains, which will be a precondition for singularity. numerous philosophical speculations and debates have followed, on the grounds that human brains cannot even comprehend such a superior intelligence. some have expressed fear that singularity can ultimately lead to the extinction of humans. others strongly oppose this view, arguing that humanity has already entered ―a major evolutionary transition that merges technology, biology, and society, where digital technology has pervaded the fabric of human society to life-sustaining dependence‖, transition that will ultimately lead to real ai (rai), as ―a globally distributed hybrid cyber-physical human intelligence converging all the emerging technologies: rai = world big data + ai + ml (dnns) + cloud ai + edge ai + iot + 5g + blockchain + autonomous things + self-driving cars + virtual reality and augmented reality + 3d printer + quantum computing + smart spaces + …‖ [37]. notably, natural intelligence is included in the concept of rai. yet other opinions exist, expressing the view that intelligence might be simpler than we think [38], since the way that humans perceive the world is hierarchical in nature, relying on simple patterns at the lower levels and increasing in complexity at the higher ones [39]. this is to say that the essence of perception, thinking, reasoning and other intelligent processing is actually pattern recognition – a long studied area in ai. all rai is viewed as a combination of a) relations/patterns/causality between entities in the environment, b) representation of a), and c) perception, cognition and reasoning in order to establish understanding of the environment and provide rational interaction with it. to this end, p. domingos has introduced the concept of master algorithm [40], as a blend of different approaches to strong ai and to ml in particular – symbolic, connectionist, evolutionary, bayesian and analogy-based – where different ml algorithms synergistically contribute to an asymptotically perfect understanding the world, the brain and intelligence. philosophers also study higher-level concepts and their relations to intelligence, starting from the much quoted and thought-inspiring book gödel, escher, bach: an eternal golden braid by d. hofstadter [41]. these include deep links between art, music, creativity, algorithms, imagination and abstract math, subtly reflected in and subsumed by intelligence. for example, s. mahadevan has proposed the new concept of imagination machines as ―a powerful launching pad for transforming ai‖ beyond the ―current realm of learning probability distributions from samples‖ [42]. using numerous examples from is this artificial intelligence? 507 arts, literature, poetry, and science, he envisions a new field of study in ai, imagination science, where researchers would explore various ways of automating tasks like ―generating samples from a novel probability distribution different from the one given during training; causal reasoning to uncover interpretable explanations; or analogical reasoning to generalize to novel situations‖. 3. current focus in ai given the difficulties in setting the scope and the boundaries of ai, reconciling somewhat different approaches to it when it‘s seen from the perspective of scholars of different backgrounds, as well as in resolving controversies that surround it, a pragmatic approach is to focus on its most popular subareas (at any given point in time). at the time of writing this article (july-august 2020), the ―popularity bar graph‖ of these subareas, published at the ai topics 14 website (curated by the highly authoritative association for the advancement of artificial intelligence, aaai 15 ), looks as in fig. 2. the popularity is measured by the number of entries in the ai topics repository, related to specific topics. it is obvious that ml is currently the most popular subarea of ai – out of the total of 336.000+ entries, about 160.000 are tagged ml. there are two major reasons for that. one of them is the flood of data that applications, businesses, different institutions, social networks, etc. generate. people want to make sense out of this extremely vast amount of data in order to improve their businesses and other activities, and ml comes as a rescue – it enables building a mathematical model based on sample data, known as ―training data‖, in order to make predictions or decisions with previously unseen data, but without being explicitly programmed to do so [43]. to build models and make predictions, ml closely relies on computational statistics, mathematical optimization and exploratory data analysis; thus, it is also referred to as predictive analytics. the models themselves come in various forms, such as neural networks, regression analysis, decision trees, support vector machines, etc. drilling down the graph shown in fig. 2 reveals that out of the nearly 160.000 ml entries about 54.000 are related to neural networks (nns), and about 32.000 are related to statistical learning. among the different types of neural networks, currently most popular ones are deep neural networks (dnns) that enable so-called deep learning (dl) [44], [45], [46]. important types of dnns include: convolutional neural networks (cnns, typically used for image analysis, facial recognition, visual search, etc.) [44], [45]; recurrent neural networks (rnns, useful in natural language processing, speech analysis, text analysis and so on) [44], [45]; and generative adversarial networks (gans, often used to generate examples for image datasets, photographs of human faces, realistic photographs, cartoon characters and face frontal views, as well as to perform image-to-image translation, text-to-image translation, semantic-image-to-photo translation, and more) [47]. 14 https://aitopics.org/ 15 https://aaai.org/ https://aitopics.org/ https://aaai.org/ 508 v. devedzic fig. 2 the bar graph of popular ai topics at the time of writing the article (source: ai topics website, https://shorturl.at/sau28) and the parts/chapters of the most popular ai textbook [12] (right) the other reason for ml being so popular nowadays is the computational power of current ml technologies. the idea of learning new knowledge from data has been attractive in ai for decades, but only recently the computing technology has advanced to the level that has made it at least partially possible. where it is not easily possible – e.g., is this artificial intelligence? 509 requires too long processing time to build models that make predictions with a satisfactory level of accuracy – special-purpose computer hardware is usually the best solution. it can be a costly one, but it‘s a situation that further accelerates hardware development. it should be also noted that ml and especially dnns have become pervasive in other popular subareas of ai indicated in fig. 2, notably in natural language processing (nlp) and in robotics. in nlp, application of dnns has led to many advancements in language modeling, capturing semantic properties of words, natural language generation, machine translation, wordand sentence-level classification, sentiment analysis, and more [48]. in robotics, detection and perception of objects, robotic grippers, fine grasping and object manipulation, scene understanding and sensor fusion, as well as collision avoidance, are all greatly improved with careful use of dnns [49]. the bar graph shown in fig. 2 is actually much more accurate than the current, informally established public view of ai. this public view can be often seen in media and in popular press, blog posts and forums all over the web: ai ≡ ml! a very frequent modality is ai/ml, and so is a less inaccurate ―ai and ml‖. there are also variations in a bit narrower scope, like ml/nn, ml/dl and the like. this has prompted more knowledgeable people to spawn all over the web a series of images like the one on the left in fig. 3, depicting the subsumption relationship between ai, ml and dl. however, the diagram on the right in fig. 3 captures more details from the above discussion. fig. 3 relationship between ai, ml and dl (left; after [50]) and a more detailed view based on the bar graph from fig. 2 (right) the righthand side of fig. 2 shows the table of contents of the most popular ai textbook today, artificial intelligence – a modern approach [12]. note that there is only a minor overlap with the bar graph on the left side. it further explains the diagram on the right side of fig. 3 – many of the remaining topics still are part of ai (the outer circle in fig. 3), but they are not in focus (which usually means lack of funding as well). a notable exception to this end is the broad subarea of ai – representation and reasoning (the second highest bin of the bar graph in fig. 2). it has always been, and still is, in the core of ai. ai textbooks typically discuss only classical topics from this subarea (propositional logic, predicate logic, production rules, reasoning with uncertainty, fuzzy logic and systems, probabilistic reasoning and the like). however, there is a thriving research there as well (although it still 510 v. devedzic does not manage to catch much of the public attention) – new representation techniques and new efficient reasoning mechanisms have been devised recently [51], [52]. these largely pertain to topic modeling, knowledge graphs, conceptual modeling, representation of different types of thinking, knowledge interwoven with imperfect data, semantic summarization, the tradeoff between expressiveness and tractability, and constructing explanations. the ai topics website largely reflects the views and interests of the ai community. however, views from other communities also matter. for example, fig. 4 shows economic perspective on strategic development of ai. ml is still there, but obviously this community puts more emphasis on industrial and social aspects of ai, as well as on emerging topics such as ai ethics and ai education and awareness. notably, this perspective considers ai to be at the same level with robotics. fig. 4 current focus in ai as seen by the world economic forum (source: https://intelligence. weforum.org/topics/a1gb0000000ptdrea2?tab=publications) 4. ai hype the current wave of interest in ai is certainly unsurpassed in the entire history of the field. there have been periods in the past when breakthroughs in ai have received a lot of interest, attention and investments, but then they have been typically followed by periods of disillusionment, ai effect and lack of funding (usually referred to as ―ai winters‖). this current wave is not only the strongest, but also the longest one. popular media cover it on a regular basis. industry, businesses and services invest in ai more than ever before. year after year universities announce and start new courses and even entire study programs related to ai. governments open new funding programs and institutions to support further development of ai. well-known businessmen, investors, entrepreneurs is this artificial intelligence? 511 and even some of the leading ai experts make statements that contribute to the hype (mark cuban: ―invest in ai technology or risk becoming ‗a dinosaur‘ very soon.‖ 16 ; sundar pichai: ―ai is probably the most important thing humanity has ever worked on‖; koray kavukcuoglu: ―we believe ai will be one of the most powerful enabling technologies ever created – a single invention that could unlock solutions to thousands of problems.‖ 17 ; azamat abdoullaev: ―whoever creates real artificial intelligence will rule the world.‖ 18 ; andrew ng: ―ai is the new electricity.‖ 19 ). claims like ―ai will completely revolutionize our society‖ are all over the media, and everyone wants to be involved in the technology race [53]. there are several reasons for all the buzz and excitement. the already mentioned technological advancements and largely increased computational power are an important enabler of ai developments, and the available enormous amounts of data come hand in hand with it. likewise, there really have been impressive recent developments that in part justify the hype. for example, some machines can outperform humans in extracting information from images and identifying objects on images [7], [53]. similarly, in nlp, the latest generative model from openai 20 , called gpt-3, can generate amazing human-like text on demand [54]. also, the strategic onlook called industry 5.0 [55] puts the interaction and collaboration between man and machine right up front and sees ai as one of the major pillars of future industry developments. promoters envision this important ai trend to make highly automated manufacturing and self-managed supply chains a reality very soon. today's technology development leaders like facebook, google, tencent, amazon, alibaba etc. all have a great business interest in developing ai-powered systems and applications, and they advertise their efforts. again, their own success with their ai products is undeniable, and there is no compelling reason why one should believe that they will not manage to make next major shifts in that direction. however, all this interest and attention raises also an important question: can ai really live up to the hype? there are opposing opinions, stating that ai has been overhyped and that current ai systems are not very intelligent and thus are very limited. some already see a decline in the hype, starting from the gartner hype cycle for ai 2019 that indicates that ml, nlp, dnn and other ai technologies are already on the downward slope of the curve, in the section called the trough of disillusionment [56]. they remind the ai community and the wider public of earlier ai hypes that have crushed by failures (e.g., ―the 5th generation of ai‖) 21 . they also argue that significant ai results achieved in the past have become part of other disciplines and are no longer considered ai. 16 https://yourstory.com/2020/01/ces-2020-mark-cuban-ai-artificial-intelligence-investments-startups 17 https://www.bbc.com/news/technology-51064369 18 https://www.linkedin.com/pulse/global-artificial-intelligence-gai-narrow-ai-applied-mldl-abdoullaev/? published=t 19 https://www.wipo.int/wipo_magazine/en/2019/03/article_0001.html 20 https://openai.com/ 21 https://shorturl.at/qhks3 https://yourstory.com/2020/01/ces-2020-mark-cuban-ai-artificial-intelligence-investments-startups https://www.bbc.com/news/technology-51064369 https://www.linkedin.com/pulse/global-artificial-intelligence-gai-narrow-ai-applied-mldl-abdoullaev/?published=t https://www.wipo.int/wipo_magazine/en/2019/03/article_0001.html https://openai.com/ https://shorturl.at/qhks3 512 v. devedzic some of the more extreme views in the stream opposing the ai hype even insist that consulting firms deliberately create the fear of missing the ai wave and scare companies into paying for ai projects 22 . they warn that typical ai applications rarely bring high payoff to companies. ai can be very hard to afford, given the cost of ai specialists and specialized hardware. mocking the ai hype comes along the same lines. a famous meme 23 from 2018 makes a parallel between concepts in computing – "then" there were application, program, operating system, script, shell, batch file, service, etc.; in 2010, they have been all replaced by app, app, app,…; in 2018, their names became ai, ai, ai,… note, however, that it is not as clear cut (i.e. just promoters vs. opponents) as it might look. the general attitude to ai has changed notably. once it was not so popular and profitable to start a business with ai. nowadays, companies proudly wave their ai flags. it has become almost a matter of self-esteem for a company to say that it is not making just ordinary applications, but ones that can learn, talk, perceive objects and so on – much like people – using ai. when someone makes a pilot study and comes up with results like ―in the future, ai will shorten your commute even further via self-driving cars that result in up to 90% fewer accidents, more efficient ride sharing to reduce the number of cars on the road by up to 75%, and smart traffic lights that reduce wait times by 40% and overall travel time by 26%‖ [1], opponents call it guessing, incomplete, wishful thinking and the like. however, people ask: ―how safe are self-driving vehicles? i‘ve heard of an accident caused by malfunction of such a vehicle.‖ promoters of self-driving vehicles often answer with a counter-question: ―how many accidents like that have you heard of?‖ true, selfdriving cars are not that many yet, so the chance of accidents caused by them is still low. if one thinks in terms of percentages/proportions – what are the proportions of the rides that ended up as accidents when a driver was behind the steering wheel, and those that had no driver? an alternative way of thinking about the same problem is: there are no drunk or mad drivers in self-driving cars. again, the debate is huge, but laymen are very surprised here: some people believe not only that the safety of self-driving cars is not lagging behind that of human-driven cars, but that self-driving cars are safer 24 . they found the grounds for such an opinion in the fact that such vehicles can use much more information than human drivers – information from vehicle-to-vehicle messaging, from ultrasonic and infrared imaging, from automated external traffic-control systems, and so on. of course, critics will reply that level-5 (fully automated) self-driving will never be possible because the ai built into self-driving vehicles belongs to a very narrow domain and lacks a wider, human comprehension of the world; thus, the critics say, using a nonhumanlike way of achieving intelligence, fully automated and truly intelligent self-driving cars will always ―be right around the corner.‖ 25 all in all, controversy is already there, but perhaps paradoxically – it only contributes to the hype. 22 https://www.forbes.com/sites/petercohan/2019/02/15/3-reasons-ai-is-way-overhyped/#31fd61a15a6a 23 https://shorturl.at/mlruy 24 https://qr.ae/txsdyi 25 https://qr.ae/tlygdy https://www.forbes.com/sites/petercohan/2019/02/15/3-reasons-ai-is-way-overhyped/#31fd61a15a6a https://shorturl.at/mlruy https://qr.ae/txsdyi https://qr.ae/tlygdy is this artificial intelligence? 513 5. limitations of what is called ai today a good question to ask about the systems that are called ai today is: what exactly can these systems do? a short answer might be: typically, one thing. for instance, a self-driving car can maybe outperform human drivers in terms of safe driving, communicating with other cars and relevant services to exchange information about road conditions, and even inform the passengers about the route, the driving time, and the like. but it cannot infer how to answer questions like: who wrote the famous lyrics words are flowing out like endless rain into a paper cup?; or, what does the term lonely planet stand for? likewise, after seeing many thousands of images of leopards, a dnn can learn to recognize them with very high accuracy. but it typically breaks when shown an image of a similar animal, like a cheetah, or a lynx. it needs to undergo a time-consuming training process again, to see many thousands of images of cheetahs in order to learn how to recognize them. and the same goes for lynxes. paradoxically, the process is the same even if it has to learn to recognize something completely different, say a tree. the idea of training another dnn on multiple datasets (e.g., leopards, cheetahs, lynxes and trees) would not work because of feature interference. even if it worked for a specific multiset, it would face the same problem when possibly adding yet another dataset to the multiset. efforts to solve this problem do exist (e.g., the proposed multi-modal dl architecture [57] with separate models tuned for each specific dataset in a multiset), but the need for training the resulting dnn again for each new dataset remains. actually, the problem is that dnns are not capable of learning the underlying principles of recognizing similar objects and differentiating them from the starting category of objects. just like the fact that ai and ml are not the same things, and that ml is not simply ―ai that improves itself‖ (an idea often found in the popular press), dl is not ml. dl can be superior in learning how to recognize images or natural language, but they are not a magic wand. when it comes to mundane tasks like regression and classification from structured data, like data sourced from a relational database, dl is of little use. in such cases, statistical techniques like gradient boosting [58], e.g. xgboost [59], are a better choice. similarly, as scott e. fahlman puts it, 26 concept detection in nlp using dl works well if a dictionary of words or word patterns representing the concepts of interest is available. otherwise, traditional symbolic reasoning might be more suitable. on the other hand, symbolic knowledge representation and reasoning techniques are also far from being good in achieving human-level performance in any non-narrow domain, let alone in commonsense reasoning. ml technology of today is also very limited in terms of generalizing from examples, as well as in terms of learning concepts efficiently and quickly based on a small set of the concept features and on just a few examples. a general problem of most currently popular ml approaches is that they need a lot of data to make statistical inference about possibly existing patterns in the data with acceptable accuracy. the data is typically noisy, and given enough data and enough computing power ml can be successful. however, humans are capable of learning from just a handful of examples and clear data. 27 moreover, a few 26 https://qr.ae/pnvvsi 27 https://qr.ae/tw4h6w https://qr.ae/pnvvsi https://qr.ae/tw4h6w 514 v. devedzic examples and clear data make it possible for humans to clearly formulate the knowledge the examples convey, to use this knowledge in further reasoning and to explain their reasoning. contrary to that, much of ml today works like a black box (with a notable exception of decision trees, which are easily interpretable and explainable). it is especially true for nns, most notably dnns. for example, dnns for image classification can include millions of parameters in their convolutions, relu and max pooling layers, which is inherently incomprehensible for humans; explaining how everything works inside such networks is currently an illusion. another serious limitation of today‘s systems called ai is that they are pretty straightforward, which is not typical for intelligent behavior. for example, humans typically drift away in conversations, they change topics, insert jokes and colloquial phrases here and there, and make conversation spontaneous. ai systems don‘t. true, they can answer questions like ―when do i have my next meeting?‖ and ―how long does it take to get from a to b by car?‖ quite accurately, but they cannot answer any more imaginative questions, like ―if bach was still alive, would he play blues?‖. in the words of s. mahadevan, today‘s ai is designed to answer ―what is‖ questions, but not ―what if‖ questions; the latter ―would simply befuddle any ai system‖. 28 many systems called ai today are also easy to fool. studies have shown that dnns are actually very brittle and vulnerable to attacks – making some tiny changes in input images through deliberate adversarial perturbations (like adding some fuzz, noise) [60], even changing only one pixel [61], can lead to a completely wrong classification of the image in a lot of cases. now, if one thinks of some real-world applications of dnns, such as selfdriving vehicles, such a one-pixel change can be fatal – what if a raindrop ―changes this one pixel‖ in such a way that the car ―believes‖ that a pedestrian is another car? or, what that one pixel can do if a medical decision is to be made based on a number of images of a tissue? similarly, an image of a bicycle or a guitar pasted for adversarial purposes over (a part of) an image of a monkey can fool the dnn to classify the animal as a human [62]. the problem here, again, is the black-box nature of dnns – it is simply difficult to figure out what exactly dnns are doing inside their hidden layers when they are predicting the class of an input data item, let alone resemblance to how human brains work. yes, they are always repeating the same algorithmic steps and are making classifications based on some statistics, but humans often have trouble understanding why such statistics are dominant. dnns do not model human brains, simply because it is not known how human brain works. more data fed into a dnn can make it more accurate, but not intrinsically human-smart. also, feeding more data into a dnn cannot account for all possible situations, not even for all possible typical data items; the datasets used contain data from different sources, hence a great deal of repetitive data. given all this discussion, one can ask the question: where is the intelligence there? 28 https://qr.ae/pn2psz https://qr.ae/pn2psz is this artificial intelligence? 515 6. reality check and practical challenges applying ai to solve practical problems in the real world usually brings up conditions different from those that govern academic research in the field. the understanding of ai (or the lack of such understanding?) in companies and institutions comes from business objectives, which typically command development of technology with more ―intelligence‖, i.e. with practical ai (roughly corresponding to weak ai) and is intentionally limited 29 . few companies are interested in developing general ai (strong ai), i.e. sentient behavior. both practical and general ai development require expertise from multiple fields, since ―ai is not a single thing‖. 6.1. human-driven ai vs. autonomous ai much of practical ai is human-driven. for example, one can see ml as predictive analytics – it creates predictions that inform human decision makers. but all steps in the process – from collecting data into dataset(s) and wrangling with the data to make it suitable for feature engineering, building the model(s), testing them, fitting them and creating predictions – are essentially driven by data engineers / ml engineers. the tools they use do not learn themselves, i.e. to not have a built-in self-improvement logic. even if such a logic was built in the ml tools, it would still be pre-programmed by human ai specialists. jeff bezos calls this human-powered pseudo-ai ―aai‖ – artificial artificial intelligence. 30 in contrast, autonomous ai (general, strong ai) reflects ―the very nature of intelligence … [i.e.] it is self-guided, self-expanding and self-inspired.‖ 31 for instance, an ml tool capable of improving its own code, deciding by itself which ml model to use to make predictions, and making different inferences about datasets by itself, would be an autonomous ml tool. to the best of the author‘s knowledge, such tools do not exist in practical ai today. 6.2. ai as a marketing term sadly, due to the ai hype the label ―ai‖ has largely become a marketing term, and the press and online posts support that situation. it has become ―a matter of honor‖ for companies and institutions to put the label ―ai‖ in their products and profile descriptions, whereas in reality much of the products and activities labeled ―ai‖ are at best applied statistics, business analytics and informed human decision-making. in marketing, rebranding is a powerful tool. if one looks carefully at the history of terms used to describe parts of research and development often attributed to ai, then they will see that once upon a time there were ―pattern matching‖ and ―pattern discovery‖. later on, there came ―data mining‖ and ―knowledge discovery‖ – slightly different, but cultivated on the same soil as their predecessors. nowadays, all of them are simply rebranded ―ai‖ (or ―ml‖, or ―dl‖). from the marketing perspective, it was actually a clever decision: ―ai‖ is catchier, cooler, more appealing and more promising. still, just like in any marketing campaign, the reality is different. today‘s dominating weak ai does the job in specific narrow application areas, but when compared to general human intelligence – it lives in a galaxy far, far away. as a famous tweet says: when you‘re 29 https://www.quora.com/?activity_story=88335643 30 https://www.wcspeakers.com/speaker/jeff-bezos/ 31 https://medium.com/@ruchika.nanayakkara/ai-is-the-next-virus-42f887a6bec4 https://www.quora.com/?activity_story=88335643 https://www.wcspeakers.com/speaker/jeff-bezos/ https://medium.com/@ruchika.nanayakkara/ai-is-the-next-virus-42f887a6bec4 516 v. devedzic fundraising, it‘s ai. when you‘re hiring, it‘s ml. when you‘re implementing, it‘s linear regression. 32 there are also warnings that the hype and hysteria around ai can possibly do harm to further ai development [63]. part of them are based on the fact that the labels ―ai‖ and ―ml‖ are (over)used only to boost sales. 33 as in the tweet mentioned above, ―ml‖ advertises and masks much less popular terms like ―regression‖ and ―classification‖ that would actually describe the essence of ml (and the absence of human-like learning in it) in a more realistic way. however, this ―sales pitch‖ bubble can burst soon, because of the dangers associated with raising expectations too high, without thinking about the real chance of delivering their vision. both heavy promoters of ai (often being ceos in big-name companies, where weak ai is an essential part of their business model) and doom forecasters (predicting massive unemployment due to ai development, existential threat, singularity and even destruction of our civilization – like stephen hawking, elon musk and bill gates, to name but a few) have originally further advertised ai with their statements [63]. however, there is little evidence in support of both big promises and big doomsaying. as market research shows, productivity in many countries is slowing down (and not rising) due to automation supported by practical ai, and unemployment is recently at its historical low [63]. moreover, a 2019 survey conducted by a uk-based investment firm has shown that about 40% of europe‘s ―ai companies‖ don‘t use ai in any way essential to their business [64]. unfortunately, such facts possibly indicate that the warnings expressed in [63] might be right: once again, as 2019 gartner curve shows [56], the disillusionment caused by over-advertised but unfulfilled ai promises has started. 6.3. ai seen from different practical perspectives different disciplines intersect in what the label ―ai‖ means in the ai community; in a way, as discussed in section 2, it‘s a catch-all term encompassing subsets of computer science, engineering, statistics, computational linguistics, mathematics, cognitive psychology, neuroscience, philosophy, etc. even subareas of ai represent intersections of different other disciplines. for example, ml is considered by some as ―a rebranding of tools from linear algebra, approximation theory, numerical optimization and statistics.‖ 34 interesting questions here are: what does current ai look like from the perspective of other relevant disciplines? what are the roles of these disciplines in ai? what about industry, employers‘ expectations and job market? what is the role of ai in a context wider than that of technology development? 6.3.1. the role of statistics most ml today heavily depends on statistics; so much, that one can often hear that ai is just statistical fitting (or curve fitting). 35 such statements draw from the fact that, in most ml, conclusions and predictions are made from a large set of training data. in spite of the fact that humans learn differently, from very few examples and making interconnections between different subject areas, experiences and new facts, statistical approaches and nns in 32 https://twitter.com/ossia/status/1097804721295773696?lang=en 33 https://qr.ae/pn2r8b 34 https://qr.ae/pnsnq3 35 https://www.quora.com/when-will-ai-go-beyond-curve-fitting https://twitter.com/ossia/status/1097804721295773696?lang=en https://qr.ae/pn2r8b https://qr.ae/pnsnq3 https://www.quora.com/when-will-ai-go-beyond-curve-fitting is this artificial intelligence? 517 ml are dominant in today‘s ai. s. mahadevan has put it nicely: ―trying to do ml without knowing statistics is like to trying to build engineering structures without physics.‖ 36 in contrast, symbolic ai – by far less popular today than in the past – is often called gofai: good old-fashioned ai. it is important to understand that gofai, in particular its knowledge representation and reasoning approaches, are not dismissed. not at all. they bring declarative way of specifying how things should be conducted, strong formalisms of logical reasoning, and also the power of generating explanations. these features can be nicely combined with statistical approaches; for instance, using symbolic approaches rigor can be brought to defining ml pipelines and what exactly they should learn using statistics. in other words, while statistical approaches can process very large, complex data sets, cognitive approaches coming from symbolic ai, like reasoning and problem-solving can bring more human-like flair to ai in order to use ai to its currently possible full potential. ml/statistical algorithms alone cannot do it; ironically, even some statisticians call ml algorithms ―very, very stupid‖. 37 on the other hand, statistical approaches in areas like image recognition and nlp are essential today. it is important to always remember that both statistical and symbolic approaches have their pros and cons. note, however, that although much of ml is built on statistics, there is an important difference in approaches between the two: classical statistics always starts from a hypothesis to test, even before the data is collected; ml first collects huge datasets and then applies exploratory statistical analysis in hope to discover some patterns in data and then use them as the model for making predictions. 38 it is up to ai course designers at universities to make the role of statistics in ai clear. unfortunately, it is not always so. in an eden webinar from november 2019 on ai in higher education [65], complaints have been put up about courses that have the label ―ai‖ in the title, but are essentially just statistics. 6.3.2. industry perspective google search for ―best careers for 2020 and beyond‖, ―best it career paths for the next decade‖, ―most in-demand it jobs‖ and the like, shows controversial results 39 . a number of websites ranking such careers does not mention ai and its subareas at all. the ―closest‖ jobs they mention are those of mathematicians, statisticians, operations research analysts, business analyst, market research analysts, marketing specialists (if one assumes that these skills are applied in developing ml models to make analyses). some websites rank data analysts, data scientists and data engineers high. only two such websites explicitly rank ai architect and robotics engineer high. a similar search on indeed.com 40 , driven by queries like ―ai‖, ―ml‖, ―ai engineer‖, ―ml engineer‖, ―robotics engineer‖ and the like, has vaguely reflected the bar graph shown in fig. 2. however, the ―software engineer‖ query had the number of hits higher by an order 36 https://qr.ae/pnnjuc 37 https://qr.ae/tqunti 38 https://qr.ae/pnkfxd 39 as of aug. 2020. only the first few dozens of hits have been surveyed. 40 https://www.indeed.com/, a popular job announcement and search website. https://qr.ae/pnnjuc https://qr.ae/tqunti https://qr.ae/pnkfxd https://www.indeed.com/ 518 v. devedzic of magnitude than the one for ―ai engineer‖ 41 . indeed‘s list of 25 best jobs for 2020 42 includes neither ai nor ml explicitly (―data scientist‖ is at no. 8, ―data engineer‖ at no. 12). related job descriptions reveal the usual ai ≡ ml misconception mentioned in section 3, as well as a frequent vagueness in postings (―using various techniques, models and algorithms to solve ai problems‖, ―applying multiple skills, functional and technical, on ai problems‖, ―building prototypes of ai applications‖, …). however, ―strong statistical and math background‖, ―programming experience (java, c/c++, phyton, ruby...)‖, ―mathematical and statistical programming experience (r, sas, spss, phyton...)‖ and the like are very frequent accompanying elements in these job announcements as well. in other words, there is much greater demand for job applicants with programming skills and knowledge of statistics than for ―pure‖ ai specialists. a forum discussion about which undergraduate computer science courses should an aspiring ml engineer take 43 lists in the answers ai, ml, probability, statistics, linear algebra, data science, algorithms, and theory of computation, augmented with an introductory course in psychology. although psychology might look to some as an ―outlier‖ in this list, it actually helps aspiring ml engineers develop a set of skills different from the ―core‖ ones – ai, ml, math, statistics – but also very important in practical work. when ml engineers do not have a good knowledge of the data they have to work with, they have to familiarize with it. in practice, it means attending meetings with the clients and putting a lot of effort in clarifying every single attribute in a dataset. all these observations should be put in the perspective of expectations from both the industry and the job applicants. actually, many companies expect job applicants to do a lot of data analytics and statistics, rather than dl modeling that is used more frequently in academia 44 . likewise, most modeling in industry in terms of ml modeling will be traditional modeling, starting from relational databases, not dnn and the like. in addition, due to companies‘ expectations, many positions that include ml tasks also comprise programming and software engineering. this often contradicts expectations of job applicants – although all ml includes some programming, it is very different from the programming associated with application development. also, most companies use cheap and abundant hardware, which means that the ―more data‖ approach also incurs longer times to train models. not understanding this important fact and expecting any ml model training to run fast without investing in expensive equipment is a serious misconception. a more-and-more applied strategy to alleviate this problem is to subscribe for cloud-based tools such as automl 45 , where training ml models relies on powerful external hardware and software. with tools like that, ml engineers can automate much of the model training, experimentation, fitting and evaluation, getting highaccuracy predictions, but cannot eliminate programming associated with the demanding tasks that precede model building in the ml pipeline – data collection, cleaning and wrangling. 41 this is probably no wonder at all; in the words of m. taylor, ―machine learning is a small part of most projects, and a lot of companies are not going to want to employ a specialist, they are going to expect their software developers to do the job.‖ (https://qr.ae/pnkm7b) 42 https://www.indeed.com/lead/best-jobs-2020; as of feb. 2020. 43 https://qr.ae/pn2tmb 44 note that there are also different opinions, e.g. https://qr.ae/pnkkru 45 https://cloud.google.com/automl https://qr.ae/pnkm7b https://www.indeed.com/lead/best-jobs-2020 https://qr.ae/pn2tmb https://qr.ae/pnkkru https://cloud.google.com/automl is this artificial intelligence? 519 from the perspective of an individual company, the workplace roles, the jobs assigned to them and the entire set of business processes and culture should be all tuned well, in order to create new values and make profit. this leaves some room for structured planning and decision-making. a simple tool to use in this process can be a 2×2 matrix with 4 quadrants, defined along the horizontal time-to-learn and vertical utility axes [66]. the quadrants defined this way include learn (high utility, low time-to-learn – the skills and roles that add value for the company quickly), plan (high utility, high time-to-learn – the skills to be acquired only if they are really worth the investment), browse (low utility, low time-tolearn – easy to acquire skills, so stay aware in case their utility increases) and ignore (low utility, high time-to-learn – the company does not have the time for these skills). with this tool, an ai company can simply list the skills it needs (e.g., ml modeling, statistics, data engineering, data collection and wrangling, etc.) and map them onto the four quadrants. the company then typically focuses on the learning quadrant and defines the job roles and positions in a rather straightforward way. 6.3.3. ml engineering and data engineering perspectives there is some difference between ml engineers and data engineers [67]. ml engineers use programming languages to collect data, clean it, wrangle with it, build and tune ml models and consider alternatives. the languages they typically use include sql, python and r. one of the most important and creative activities of ml engineers is feature engineering – what often differentiates successful ml projects from those that fail is the lack of deriving new, useful input features from existing ones. data engineers take care of various data sources, formats, storage 46 , infrastructure, scaling and security, and, very importantly, integrating them in applications to make predictions – for example, deploying them in the cloud as microservices [68]. experience and skills in data etl (extract, transform, load) 47 are essential for data engineers, and so is sql. these two (often intertwined) job roles make much of ―what it really looks like‖ to work in the area of ml in a company 48 , and is largely different from ml research [69]. note also that many use the term ―data scientist‖ to encompass ml engineer, data engineer and business analyst roles. this often hinders the real nature of the work done by ml engineers, and some even call this term mislabeling. 49, 50 as already mentioned, most of the real work of ml engineers is related to programming. ml model building and tuning takes up to 10-15% of their time (whereas data cleansing and wrangling are about 80% of the job). they work mostly on regression and classification problems, much less on dl problems, and their good command of descriptive statistics is understood. to some, it comes as a surprise that there are usually no entry-level positions for ml engineers and data engineers. 51 but it stops being a surprise when one remembers that, for instance, the ml role assumes knowledge of ai and statistics and a long list of programming and other technical skills. it‘s a similar case with the data engineer role. 46 https://qr.ae/pnrddd 47 https://qr.ae/pnkf7p 48 https://qr.ae/pn2ydq 49 https://qr.ae/pnypal 50 https://qr.ae/pnkkru 51 https://qr.ae/pn2nuv https://qr.ae/pnrddd https://qr.ae/pnkf7p https://qr.ae/pn2ydq https://qr.ae/pnypal https://qr.ae/pnkkru https://qr.ae/pn2nuv 520 v. devedzic 6.3.4. strategic perspective no understanding of the current state of affairs in ai can be complete without at least briefly taking into account a more global, strategic perspective. to this end, the current view is that the strategic leaders in ai are just 9 big companies from china and us [70]: alibaba (china), amazon (us), apple (us), baidu (china), facebook (us), google (us), ibm (us), microsoft (us) and tencent (china). amy webb, the author of the book [70] specifies: ―these companies that are building the frameworks, the custom silicon, it‘s their algorithms, it‘s their patents. they have the lion‘s share of patents in this space. they‘re able to attract the top talent. they have the best partnerships with the best universities. it‘s these nine companies who are building the rules, systems and business models for the future of artificial intelligence. as a result of that, they have a pretty significant influence on the future of work in everyday life.‖ 52 however, there is a big difference in how these companies work: those from usa are private companies, commercially oriented and with responsibility primarily to their shareholders; those from china, on the other hand, are independent but have to follow the leadership of the government. but in both cases, it is a relatively small group of people that make decisions, and the process is not very transparent. application-wise, in usa it is microsoft that is the leader in defense ai, and amazon also has a number of contracts with the government related to ai development. google has pulled out of the defense applications and has focused more on transportation, healthcare and consumer services. when it comes to dl applications, it is nvidia corporation that manufactures gpu units that power self-driving vehicles, cloud computing and so on, deep instinct is the leader in dl-based cybersecurity, and microsoft‘s cloud computing service, azure, can run complex dl-driven tools for medical imaging, robotics, nlp etc. in china, ai in transportation has reached an extremely impressive level, and intelligent service robots and drones, neural network chips, and intelligent manufacturing are also among the ai development priorities identified by the chinese ministry of industry and information technology. 6.4. fear of ai vs. benefits of ai the rapid development of ai and the ai hype have created fear in many people, who seem to believe in the dark predictions mentioned in section 6.2. in a nutshell, the fear is that once intentions, thoughts, human-like behavior and other features of intelligence are coded into programs, machines will become very hard to control and will become inherently dangerous. on the way to this singularity, massive unemployment is almost at sight, in spite of the lack of evidence ([63], [64]) that it looks like that. another concern is that the massive data being collected about everything, everywhere, every minute can become a downright threat to privacy and can endanger society by putting control over too many things into hands of governments or other small groups of people. for instance, it has been reported that in china the government has installed over 200 million of surveillance cameras connected with a powerful face-recognition dl system [71]. as a result, each person captured on any of these cameras can be identified and an activity profile is then created for that person. given the population of china, the technology behind 52 https://www.forbes.com/sites/joemckendrick/2019/04/10/nine-companies-are-shaping-the-future-of-artificialintelligence/#336612632cf1 https://www.forbes.com/sites/joemckendrick/2019/04/10/nine-companies-are-shaping-the-future-of-artificial-intelligence/#336612632cf1 https://www.forbes.com/sites/joemckendrick/2019/04/10/nine-companies-are-shaping-the-future-of-artificial-intelligence/%23336612632cf1%20 https://www.forbes.com/sites/joemckendrick/2019/04/10/nine-companies-are-shaping-the-future-of-artificial-intelligence/#336612632cf1 https://www.forbes.com/sites/joemckendrick/2019/04/10/nine-companies-are-shaping-the-future-of-artificial-intelligence/%23336612632cf1%20 is this artificial intelligence? 521 this system is certainly mind-blowing, but the concern is that such an activity profile is then fed into an ai-powered social credit system, meaning that for each person the government calculates a credit score/rating. those with high scores enjoy benefits in e.g., online purchases, restaurants, hotels and while traveling; those with low scores don‘t. sure, companies like facebook and google are collecting data about their users and are creating their profiles as well, and it is not clear how they are using these profiles. a lot of discomfort has also been created by a recent research at mit, where a dl system called norman 53 has been trained using highly negatively biased data [72]. as a result, images classified in a neutral way by a standard dl image recognition system have been classified by norman in a scary way. this has raised many concerns, like: ―imagine ai that denies someone a loan because of their gender. imagine ai that classifies someone as a criminal because of racial prejudice. what‘s the scariest part of artificial intelligence? how similar it is to us.‖ 54 others have rushed to respond quickly, e.g. ―there is no reason to give ai control over goals. there is only gain to be had in giving it control over means… no tool is designed to take over the goals of what it should be used for. tools don‘t have their own motives.‖ 55 they all pull up many examples of ―good ai‖, such as those surveyed in section 1, and their major counter-argument is summarized as ―sometimes those goals, as decided by humans, are dangerous to other humans. but that‘s not out of control. that‘s just in the control of a dangerous human.‖ 53 the largely debated issue that many people will be left jobless and without purpose due to ai-powered automation of many jobs has its reasons. truck drivers, factory workers, retail and food service assistants are not the only ones to be scared to this end, although their jobs are usually the first ones mentioned in the debates. stock trading, legal analysis, as well as robotic surgery and medical diagnosis, treatment and care, are often quoted as highly skilled professions where ai will replace humans. more optimistic views see ai and data revolution as incentives to transform business processes and job roles. the ai assistant metaphor is their stronghold – they see ai-driven machines not as competitors for human jobs, but as companions that will do work that they can do better, and will simultaneously let humans focus on things unique to them, such as building relationships, making decisions in complex situations, showing empathy and the like. as g. warner has nicely put: ―which would you rather have: 1) a human doctor; 2) an ai doctor; or 3) a human doctor using ai?‖ 56 some jobs will certainly cease to exist due to further development of ai – as it has been the case due to different kinds of automation throughout the history of mankind – but some new will be created. in general, many jobs that entail creativity, social interactions, general knowledge, emotional and social intelligence, as well as manual dexterity will thrive; for example, change management specialists, human-computer interaction developers, ml infrastructure maintainers, data curation workers, mental health professionals, etc. an almost ―classical‖ related question is ―will ai replace programmers?‖ m. fouts‘ answer, not without an irony, is: ―every 10 years from 1960 to 1990 at least one major prediction by a prominent ai researcher was ―ai will make programmers obsolete in (8-)10 years‖. 1960 53 http://norman-ai.mit.edu/ 54 https://qr.ae/pn2kgb 55 https://qr.ae/txsb4x 56 https://qr.ae/pn2knb http://norman-ai.mit.edu/ https://qr.ae/pn2kgb https://qr.ae/txsb4x https://qr.ae/pn2knb 522 v. devedzic was 60 years ago and no programmer has ever been replaced by the use of ai software. nobody has made that prediction since 2000, as far as i know. if ai is ever able to replace programmers, it won‘t be this century.‖ 57 in debates on ai pro et contra, there is also a group of people who tend to be neither pessimists nor optimists, but cautious and more realistic, i.e. to see the things from multiple perspectives. here‘s a comment coming from that party, in this case with regard to the recently developed gpt-3 natural language generator: ―a tool like this has many new uses, both good (from powering better chatbots to helping people code) and bad (from powering better misinformation bots to helping kids cheat on their homework).‖ [54]. developing ai that brings benefits to the society is also a concern of governments and political institutions. for instance, european commission has published a strategic document on development of ai for the benefit of the citizens of eu [73]. the document addresses many opportunities and challenges of ai, but also ―a number of potential risks, such as opaque decision-making, gender-based or other kinds of discrimination, intrusion in our private lives or being used for criminal purposes.‖ the guidelines on development of ethical and trustworthy ai [74] have been a precursor to [73]; these guidelines have established a framework for achieving trustworthy ai. the framework has set ethical principles and values for developing ai in europe, with the idea to foster development of ethical and robust ai. here ―robust‖ refers to the fact that ai systems can cause unintentional harm, so both technical and social robustness should be addressed when developing an ai system. 6.5. artificial general intelligence artificial general intelligence (agi), also sometimes called general artificial intelligence (gai), has recently proliferated as more-or-less a synonym for strong ai and is used interchangeably with it, as well as with true ai, general ai and real ai (rai). conceptually, it is a close approximation of the concept of ai as it was originally envisioned in mid 1950s – the technology that would be able to do anything that human intelligence can, without human intervention. 58 intensive recent discussions about agi and if it is achievable are largely a side effect of the ai hype. critics of current ai notice that it is designed only to perform specific tasks, like image recognition and chess playing, tasks that are essentially based on mathematical logic. fed by huge amounts of data and by pre-programed algorithms, and in some cases equipped by powerful sensory systems (e.g., modern robots and self-driving vehicles), in most mundane applications they do perform well. but if agi tasks are set as objectives, current approaches simply hit the wall. an agi system should also be free of any bias in its behavior, reasoning and actions. this is inherently impossible, if only for the reason of their human designers being biased in many ways (attitudes, objectives, culture and the like) 59 . for instance, chinese and us ai developers would typically have different views of the ai objectives and purpose). likewise, agi is envisioned as observer-independent – also impossible with current technology – whereas 57 https://qr.ae/tl03vw 58 from mid 1950s, ai was originally developing that way for approximately 2 decades, before the statistical approach has been initiated in the field. 59 https://qr.ae/pnsn6g https://qr.ae/tl03vw https://qr.ae/pnsn6g is this artificial intelligence? 523 current ai is observer-dependent. 60 for example, since human intelligent behavior is typically inseparable from emotions, it is highly unlikely that supporters of animal shelters will react to stray dogs the same way as people who have got bit by such dogs. last but not least, an essential feature of agi would be the ability to generalize and then make small variations of the generalized concept or behavior; current ai cannot do it, in spite of some attempts to provide formalisms to do it (e.g., based on description logics [75]). ―throwing larger data sets at faster computers only works for a handful of problems and doesn‘t work very well at that… but none of these performances have resulted in a general method that works. instead, so called data scientists carefully tune data sets used for training, ai companies are caught having humans do what they claim their ai software is doing, and progress has ground nearly to a halt.‖ 61 naturally, speculations on the feasibility of agi have also revived the likewise speculative idea of rai [37] and have even led to its elaboration into the concepts such as super intelligence, artificial super intelligence (asi), universal data intelligence framework and the like. 62 but perhaps more importantly, they have also raised speculations about another ai winter. there have been two major ai winters in the past (in early 1970s and late 1980s / early 1990s). they have resulted from ai hypes that have preceded them, over-inflated buzz created by popular media and unrealistic promises made by companies and developers. these, in turn, have created extremely high expectations from industry and potential endusers, which have eventually failed to become a reality and have led to the bubble burst effect. some base their speculations about another ai winter at sight on making analogies with the previous two. others 63 also look at the gartner hype cycle for ai 2019 [56], as mentioned in sections 4 and 6.2. both of these parties express disappointment in current ai not producing commercial results. the hangover is even more obvious from the sheer reality that impressive results in dl and nlp typically come from costly hardware required to train the models with massive data 61 [63]. this especially hits startups, which are beginning to realize that the magic label ―ai‖ alone is not enough to create a roi. even big players like google, microsoft and openai are beginning to show signs of slowing down the innovation, 64 since most of their huge ml models still keep mapping input to output, without any reasoning or building world models that agi supporters demand. in summary, agi still remains a myth. 6.6. challenges still, although the hype seems to be declining, there are other opportunities and reasonable funding, and there are also intriguing challenges. some of them are indicated in the innovation trigger / on the rise section at the same gartner hype cycle for ai 2019 that shows the slight decline of interest in nlp, dl and computer vision [56]. interestingly, agi is there, but it is predicted to take more than 10 years before it becomes a reality. other notable ai technologies on the rise include, e.g.: 60 https://qr.ae/pn2kxe 61 https://qr.ae/tcvcp4 62 https://shorturl.at/pefl9 63 https://qr.ae/tstw09 64 https://qr.ae/tswzt4 https://qr.ae/pn2kxe https://qr.ae/tcvcp4 https://shorturl.at/pefl9 https://qr.ae/tstw09 https://qr.ae/tswzt4 524 v. devedzic  decision intelligence. it is about how to apply ml in organizational decisionmaking in order to initiate actions with beneficial outcomes. it also applies visualization to help decision-makers quickly grasp cause and effect chains [76].  neuromorphic hardware. in this special-purpose hardware, behavior of neurons in human brain is emulated directly in hardware, enabling exceptional and energyefficient performance during the training of dnns. 65  ai developer kits. this term denotes a set of technologies for straightforward building of ai applications for mobile devices, as well as in the form of web services. 66  ai paas (ai platform as a service). platforms accessible as services for ml developers through a web-based interface enable developers to build models, use models developed by others, and enjoy the model upand down-scaling as needed. 67  edge ai. much of data preprocessing and initial ml can be done by devices used to collect data (e.g., smart speakers), prior to sending data to more powerful computers and servers for further analysis. 68  explainable ai (xai). in contrast to today‘s black-box nature of ml, where often even the system designers cannot explain why the model has predicted a specific output, xai develops with the idea to make the output of an ai system understood by humans [77].  … in addition to these practical development challenges, there is also a number of theoretical challenges that ai still has to take on its path of further expansion. for example, classical questions still without a good theoretical answer are: what exactly is happening inside a nn that makes it possible to train it to recognize images, voices, and so on? why dl algorithms work? similarly, how one can infer a suitable number of layers and nodes in a nn? it is still largely a matter of trial and error; there is no theory about it. likewise, what is the real nature of human vision and can one build a computer vision system based on it, unlike building dl-based image recognition systems where a change of only one pixel can lead to misclassification of the entire image? along the same lines, can ml work correctly without cleaning noisy data first? human brain can. in nlp, how to enable semantic understanding of text? further on, 69 instead of just more-or-less accurately mapping a dnn input to output using some (often complicated) transfer function, is it possible to make the network infer some causal knowledge that connects the two? can a dnn be trained to learn multiple tasks simultaneously? can it be trained to self-improve over time, possibly in multiple phases, like in the developmental psychology of humans? ultimately, can it be trained to become self-aware? these last questions can be tackled in multiple ways. at mit, researchers have tried to make an ai system evolve on its own, in terms of automatically discovering complete 65 https://www.iis.fraunhofer.de/en/ff/kom/ai/neuromorphic.html 66 https://www.colocationamerica.com/blog/ai-development-tools 67 https://geekflare.com/machine-learning-paas/ 68https://www.digikey.com/en/maker/projects/what-is-edge-ai-machine-learningiot/4f655838138941138aaad62c170827af 69 https://qr.ae/pnkdrs https://www.iis.fraunhofer.de/en/ff/kom/ai/neuromorphic.html https://www.colocationamerica.com/blog/ai-development-tools https://geekflare.com/machine-learning-paas/ https://www.digikey.com/en/maker/projects/what-is-edge-ai-machine-learning-iot/4f655838138941138aaad62c170827af https://www.digikey.com/en/maker/projects/what-is-edge-ai-machine-learning-iot/4f655838138941138aaad62c170827af https://qr.ae/pnkdrs is this artificial intelligence? 525 ml algorithms just using basic mathematical operations as building blocks [78]. although preliminary results look modest – their evolutionary approach has enabled the system to discover two-layer neural networks trained by backpropagation – it is still extremely promising because of at least two reasons. the first one is the vastness of the search space. while their work has just scratched the surface, it is quite possible that the approach can help discover yet unknown nn algorithms and topologies. the second reason is of at least equal importance: this approach significantly reduces human bias due to a generic search space. another group of researchers has made initial progress in developing nns good for modeling and learning continuous processes (unlike all other nns, including dnns, that can model only discrete things, i.e. nothing that transforms continuously over time) [79]. these new nns are called ode networks, for ordinary differential equations that parameterize the continuous dynamics of hidden units specified by a neural network. with other nns, the way training is typically conducted is specifying the number of layers in advance, running the training and then finding how accurate the network is. in contrast, with an ode network one specifies the target accuracy first, based on which the network configures and trains itself in the most efficient way until it achieves the pre-specified accuracy. the ode approach is also featured by high memory efficiency. the drawback is that, unlike with other nns, one cannot tell in the beginning of training how long it will take for an ode network. 7. conclusions? this is another intentional question mark in a subheading. it is difficult to derive any definite conclusions about ai as a field today, since the only common denominator of so many different views and phenomena is – controversy. there is still no single, widely adopted and solid definition of what ai is. this is not a surprise, given the fact that there are still a lot of disagreements on what human intelligence is. in spite of that, there seems to be a good deal of agreement about the differences between weak ai and strong ai (agi), fig. 5. still, due to the ai effect, many research results that initially take on the lure of ai, lose that lure over time and become ―just technology‖. part of the explanation for that is the fact that virtually all ai today is essentially weak ai, without generalized human cognitive abilities, hence incapable of solving intelligent tasks without human intervention. it is quite possible that ai effect will not stop until agi is achieved (if it ever happens). it might also happen that when agi is achieved the term ―ai‖ will gradually become obsolete and just part of the history of computing. but until that happens, the reality looks very different. ai cannot do so many things that in the world of humans are taken for granted – e.g., there is still no robot that can implement the moves of an old lady drinking her coffee without spilling the coffee 70 , and no dnn that can recognize the reasons behind a sudden change in a person‘s mood. true, advances in technology have accelerated the capture of data and information, and the technology we call ml can usually efficiently analyze this data, build models, and make predictions. but it cannot explain the models and predictions it has made, not at all. 70 a brilliant example by a. kostic, given during an ai-related class at the u. of belgrade in 2017. 526 v. devedzic the volume and intensity of the ai hype have created a situation of overselling ai both in industry and in academia. many businesses declare that they are deploying and/or developing some ai; however, a recent survey has not confirmed it for about 40% of the sample. the offer of ai, ml, dl and similar courses is abundant at universities and at boot camps, and is largely profitable because of people‘s fear of missing out (despite the employers‘ reserved opinion about the certificates from such courses). the prophecies of agi-coming-soon, which the general press is frequently throwing, only contribute to that fear. but few, very few realize some crucial misconceptions about ai, like the one that current ai systems still remain useful in narrow domains. the extreme view is that ai actually doesn‘t exist. 71 fig. 5 a vision of ai ai has largely become a metaphor for data-intensive technology. is it maybe a sign of a paradigm shift in the field? long ago, achieving human-level intelligence, or agi, has been the objective of ai research; supporters of the agi idea believe that it should remain so. however, ai today seems to be obsessed with data, despite the fact that much of it achieves success only with static data or snapshots of data; but the problem is that data changes over time. time-series analysis is an approach to tackle this problem, but it is also a data-intensive approach. things like temporal reasoning, that once have been among the hottest ai topics, seem to be forgotten. fortunately, in spite of so many controversies research in the broad field of ai is not dead. researchers (and companies, like amazon, baidu, facebook, alibaba, openai and google) always detect and pursue interesting problems at different scales. they often fail to deliver results, but are not afraid to fail – curiosity always prevails over fear (although neither is possible to represent with current ai technology!). failures indicate the paths not to follow, thus they can still be of some value in the next step. 71 https://qr.ae/tiy96a https://qr.ae/tiy96a is this artificial intelligence? 527 although nobody knows when and if agi will be achieved or not, brilliant entrepreneurs and researchers alike keep suggesting how to pursue it. alan kay‘s affirmative attitude about true ai is: ―the history of learning how life works is ‗very suggestive‘ that intelligence [can be based on] special organizations of parts that do not at all have to be intelligent into systems that manifest intelligence… from the practical standpoint, it is hard to imagine that solutions will not be more intelligent and reflective than human beings right from the get-go (we are actually terrible thinkers, given what thinking is all about).‖ 72 sridhar mahadevan seems to share that opinion: ―intelligence emerges from the synergistic interaction of simple entities embedded in complex environments… in this view, we think of intelligence not as an ability innate to a creature, but as a composite of the interactions of the creature with its environment.‖ 73 references [1] d. faggella, ―everyday examples of artificial intelligence and machine learning – comprehensive overview,‖ woburn, ma, emerj artificial intelligence research, white paper, 2020. [2] t. stenovec, ―google has gotten incredibly good at predicting traffic – here's how,‖ new york, ny, business insider, white paper, 2015. [3] d. richman, ―uber‘s machine learning chief says pattern-finding computing fuels ride-hailing giant,‖ seattle, wa, geekwire llc, 2016. [4] j. markoff, ―planes without pilots,‖ new york, ny, new york times, 2015. [5] bi intelligence, ―10 million self-driving cars will be on the road by 2020,‖ new york, ny, business insider, white paper, 2015. [6] a. prakash, ―swarm robotics: new horizons in military research,‖ robotics business review, may 2018. [7] f. grimal and j. jae sundaram, ―combat drones: hives, swarms, and autonomous action?,‖ j. of conflict & security law, vol. 23, no. 1, pp. 105–135, spring 2018. [8] l. huang et al. (oct. 2011). adversarial machine learning. presented at aisec'11: 4th acm workshop security and artificial intelligence, chicago, il. [online]. [9] w. knight, ―military artificial intelligence can be easily and dangerously fooled,‖ mit technology review, oct. 2019. [10] n. mejia, ―ai-based fraud detection in banking – current applications and trends,‖ woburn, ma, emerj artificial intelligence research, white paper, 2020. [11] p. marsden, ―artificial intelligence defined: useful list of popular definitions from business and science,‖ white paper, 2017. [12] s.j. russell and p. norvig, artificial intelligence a modern approach, third edition. boston, ma: pearson, 2016, chapter 1, pp. 1–5. [13] r.j. sternberg, ―intelligence (entry),‖ in the oxford companion to the mind, 1st ed., r.l. gregory and o.l. zangwill, eds., new york, ny, usa: oxford univ. press, 1987, pp. 375–379. [14] s. legg and m. hutter, ―a collection of definitions of intelligence,‖ in procedings of the 2007 conference on advances in agi: concepts, architectures and algorithms: proc. of the agi workshop 2006, jun. 2007, pp. 17–24. [15] l.s. gottfredson, ―mainstream science on intelligence: an editorial with 52 signatories, history, and bibliography,‖ intelligence, vol. 24, pp. 13–23, dec. 1997. [16] u. neisser et al., ―intelligence: knowns and unknowns,‖ amer. psychologist, vol. 51, no. 2, 1996, pp. 77–10. [17] a. turing, ―computing machinery and intelligence,‖ mind, vol. 59, no. 236, pp. 433–460, oct. 1950. [18] ―turing test success marks milestone in computing history,‖ u. of reading press release, jun. 08, 2014. [19] w. knightley, ―google duplex: does it pass the turing test?,‖ digital initiative, harvard business school, boston, ma, nov. 2018. [20] ―robots or people: who‘s gonna rule tomorrow?,‖ evergreen, kyiv, ukraine. [21] j.r. searle, ―minds, brains, and programs,‖ behavioral and brain sci., vol. 3, no. 3, pp. 417-457, 1980. [22] s.e. fahlman, ―how advanced is the most sophisticated example of ai?,‖. 72 https://qr.ae/pn27dk 73 https://qr.ae/pn2psz https://qr.ae/pn27dk https://qr.ae/pn2psz 528 v. devedzic [23] m. haenlein and a. kaplan, ―a brief history of artificial intelligence: on the past, present, and future of artificial intelligence,‖ california management review, vol. 61, no. 4, pp. 5–14, aug. 2019. [24] k. bailey, ―reframing the ‗ai effect‘,‖ san francisco, ca, medium corp., 2016. [25] e. luders et al., ―neuroanatomical correlates of intelligence,‖ intelligence, vol. 37, no. 2, 2009, pp. 156–163. [26] a. nowogrodzki, ―the world‘s strongest mri machines are pushing human imaging to new limits,‖ nature, vol. 563, no. 7729, pp. 24–26, nov. 2018. [27] s.r. cox et al., ―structural brain imaging correlates of general intelligence in uk biobank,‖ intelligence, vol. 76, pp. sep-oct. 2019. [28] z. zheng et al., ―a complete electron microscopy volume of the brain of adult drosophila melanogaster,‖ cell, vol. 174, no. 3, pp. 730-743, jul 19, 2018. [29] l.r. grimm, ―psychology of knowledge representation,‖ wires cogn. sci., vol. 5, no. 3, pp. 261–270, may-jun. 2014. [30] s. mahadevan, ―how is knowledge representation carried out in the brain?,‖ [31] l. chang and d.y. tsao, ―the code for facial identity in the primate brain,‖ cell, vol. 169, no. 6, pp. 10131028, jun 2017. [32] leverhulme centre for the future of intelligence, ―the consciousness and intelligence project‖. [33] m. aydede and g. guzeldere, ―consciousness, intentionality and intelligence: some foundational issues for artificial intelligence,‖ j. of experim. & theor. ai, vol. 12, no. 3, pp. 263–277, nov. 2010. [34] v. vinge, ―the coming technological singularity: how to survive in the post-human era,‖ in vision21: interdisciplinary science and engineering in the era of cyberspace, g.a. landis, ed., nasa publication cp-10129, pp. 11–22, 1993. [35] i.j. good, ―speculations concerning the first ultraintelligent machine,‖ adv. in computers, vol. 6, pp. 31– 88, 1965. [36] r. kurzweil, the singularity is near. new york, ny: viking books, 2005. [37] k. persianov, ―which company do you think will be the first to create the singularity for artificial intelligence?‖ . [38] m. brenner, ―why intelligence might be simpler than we think – lessons from the neocortex,‖ san francisco, ca, medium corp., 2019. [39] r. kurzweil, how to create mind? new york, ny: viking books, 2005. [40] p. domingos, the master algorithm: how the quest for the ultimate learning machine will remake our world. new york, ny: basic books, 2015. [41] d. hofstadter, gödel, escher, bach: an eternal golden braid. new york, ny: basic books, 1979. [42] s. mahadevan, ―imagination machines: a new challenge for artificial intelligence,‖ palo alto, ca, aaai, 2018. [43] t. mitchell, machine learning. new york, ny: mcgraw hill, 1997. [44] i. goodfellow, y. bengio and a. courville, deep learning. cambridge, ma: mit press, 2016. [45] h. wang and b. raj, ―on the origin of deep learning,‖ arxiv:1702.07800, 2017. [46] a. géron, hands-on machine learning with scikit-learn, keras, and tensorflow: concepts, tools, and techniques to build intelligent systems, 2nd ed. boston, ma: o'reilly media, 2019. [47] i. goodfellow et al., ―generative adversarial networks,‖ in proceedings of the int. conf. neural inf. proc. sys. (nips 2014) 2014, pp. 2672–2680. [48] t. young et al., ―recent trends in deep learning based natural language processing,‖ ieee comp. intelligence mag., vol. 13, no. 3, pp. 55-75, aug. 2018. [49] h.a. pierson and m.s. gashler, ―deep learning in robotics: a review of recent research‖. [50] mc.ai, ―fundamentals of machine learning (ml), deep learning (dl) and artificial neural networks (ann),‖ mc.ai, dec. 11, 2019. [51] c. ramirez, ed., advances in knowledge representation. london, uk: intechopen limited, 2012. [52] m.k. bergman, a knowledge representation practionary: guidelines based on charles sanders peirce. new york, ny: springer, 2018. [53] v. flovik, ―machine learning: from hype to real-world applications – how to utilize emerging technologies to drive business value,‖ san francisco, ca, medium corp., towardsdatascience, sep 16, 2019. [54] w.d. heaven, ―openai‘s new language generator gpt-3 is shockingly good—and completely mindless,‖ mit technology review, jul. 2020. [55] m. vollmer, ―what is industry 5.0?,‖ sunnyvale, ca, linkedin, august 23, 2018. [56] l. columbus, ―what's new in gartner's hype cycle for ai,‖ new york, ny, forbes newsletter group, sep 25, 2019. [57] l. kaiser et al., ―one model to learn them all,‖ arxiv:1706.05137. [58] j.h. friedman, ―greedy function approximation: a gradient boosting machine,‖ ann. statist. vol. 29, no. 5, pp. 1189–1232, 2001. is this artificial intelligence? 529 [59] t. chen and c. guestrin, ―xgboost: a scalable tree boosting system,‖ arxiv:1603.02754. [60] i.j. goodfellow, j. shlens and c. szegedy, ―explaining and harnessing adversarial examples‖, arxiv:1412.6572. [61] j. su, d.v. vargas and s. kouichi, ―one-pixel attack for fooling deep neural networks,‖ arxiv:1710.08864. [62] a.l. yuille and c. liu, ―limitations of deep learning for vision, and how we might fix them‖, the gradient, 2019. [63] w. naudé, ―ai‘s current hype and hysteria could set the technology back by decades,‖ the conversation, jul. 24, 2019. [64] w. knight, ―about 40% of europe‘s ―ai companies‖ don‘t use any ai at all,‖ mit technology review, mar. 2019. [65] eden network. artificial intelligence (ai) in higher education. (nov. 14, 2019). [66] c. littlewood, ―prioritize which data skills your company needs with this 2×2 matrix,‖ harvard business rev., oct. 23, 2018. [67] m. west, acing the machine learning interview, in press. [68] c. kaiser, ―stop making data scientists manage kubernetes clusters,‖ san francisco, ca, medium corp., 2019. [69] d. sculley et al., ―hidden technical debt in machine learning systems,‖ corpus id: 17699480. accessed aug. 15, 2020. [70] a. webb, the big nine: how the tech titans and their thinking machines could warp humanity. new york city, ny: publicaffairs, 2019. [71] p. mozur, ―inside china‘s dystopian dreams: a.i., shame and lots of cameras,‖ new york times, jul. 8, 2018. [72] g. kumar et al., ―scary dark side of artificial intelligence: a perilous contrivance to mankind,‖ humanities & soc. sci. rev., vol. 7, no. 5, pp. 1097-1103, 2019. [73] european commission, ―on artificial intelligence a european approach to excellence and trust,‖ brussels, com (2020) 65 final, feb. 19, 2020. white paper. [74] high-level expert group on artificial intelligence, ―ethics guidelines for trustworthy ai,‖ european commission, brussels, belgium. apr. 8, 2019. [75] a.r. divroodi et al., ―on the possibility of correct concept learning in description logics‖. vietnam j. comp. sci. vol. 5, no. 1, pp. 3–14, 2018. [76] c. byrne, ―why google defined a new discipline to help humans make decisions,‖ fastcompany, jul. 18, 2018. [77] e. tjoa and c. guan, ―a survey on explainable artificial intelligence (xai): towards medical xai,‖ arxiv:1907.07374, 2019. [78] e. real et al., ―automl-zero: evolving machine learning algorithms from scratch,‖ arxiv:2003.03384, 2020. [79] r.t.q. chen et al., ―neural ordinary differential equations,‖ arxiv:1806.07366, 2018. accessed: aug. 18, 2020. instruction facta universitatis series: electronics and energetics vol. 27, no 3, september 2014, pp. 411 424 doi: 10.2298/fuee1403411d implementation of artificial neural networks based ai concepts to the smart grid  marko dimitrijević, miona andrejević stošović, jelena milojković, vančo litovski faculty of electronic engineering, university of niš, serbia abstract. ict and energy are two economic domains that became among the most influential to the growth of modern society. these, in the same time, due to exploitation of natural resources and producing unwanted effects to the environment, represent a kind of menace to the eco system and the human future. implementation of measures to mitigate these unwanted effects established a new paradigm of production and distribution of electrical energy named smart grid. it relies on many novelties that improve the production, distribution and consumption of electricity among which one of the most important is the ict. among the ict concepts implemented in modern smart grid one recognizes the artificial intelligence and, specifically the artificial neural network. here, after reviewing the subject and setting the case, we are reporting some of our newest results aiming at broadening the set of tools being offered by ict to the smart grid. we will describe our result in prediction of electricity demand and characterization of new threats to the security of the ict that may use the grid as a carrier of the attack. we will use artificial neural networks (anns) as a tool in both subjects. key words: smart grid, ict, artificial intelligence, ann, prediction, security. 1. introduction in our recent studies we addressed the problem of interaction of the ict and energy sector including the specific interrelation through the subject of security [1, 2]. most of the claims reported were later on confirmed in the literature as, for example, in [3, 4, 5, 6]. it is our intention here to report on some aspects of these interrelations and, via some new case studies, to demonstrate how much the modern energy distribution system may be supported by ict. in particular, we intend to emphasize the potential role of the artificial intelligence in improving the implementation of the new emerging concepts of production, consumption and distribution of electricity. the ict industry plays a vital role in the global economy and is a major driver of growth and development [3]. several of the most transformative economic trends (e.g., social media, big data, multi-channel retail, etc.) involve the use of ict.  received january 31, 2014; received in revised form june 5, 2014 corresponding author: miona andrejević stošović university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, (miona.andrejevic@elfak.ni.ac.rs) 412 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski in addition to its positive implications for economic growth, ict‟s greenhouse gasses (ghg) abatement potential must also be considered [3]. the ict industry accounted for 1.9% of total global ghg emissions in 2011, which is significantly less than its overall contribution to gdp. nonetheless, this is a significant amount of emissions that the industry must address, especially as we expect even faster adoption of ict in the future. however, in the last several years there have been promising strides toward decreasing the growth rate of ict emissions. early on, sustainable ict focused on green ict initiatives that minimize the ecological impact of the development, management, use, and disposal of computing resources. that is named the first wave of sustainable ict [7]. green ict tends to be product-oriented and mostly focused on reducing energy costs and carbon emissions for data centres and desktops. several studies were reported on the energy footprint of computers and data centres [8, 9, 10]. as concerns about ict‟s impact on the environment have risen, these issues have become limiting factors in determining the feasibility of deploying new ict systems, even though processing power is widely available and affordable. on the other side the electric power sector went through revolutionary transformations that include deregulation, use of alternative energy sources, and introduction of ict. at the distribution level, the new requirements call for the development of:  distribution grids accessible to distributed generation (dg) and renewable energy sources (ress), either self-dispatched or dispatched by local distribution system operators,  distribution grids enabling local energy demand management interacting with the users through smart metering systems, and  distribution grids that benefit transmission dynamic control techniques and overall level of power security, quality, reliability, and availability. the key technology supposed to fulfil these requirements today is named smart grid. smart grids and smart power systems in the energy sector can have major impacts on improving energy distribution and optimizing energy usage [11]. defining the smart grid in a concise way is not an easy task as the concept is relatively new and as various alternative components build up a smart grid. some authors even argue that it is “too hard” to define the concept [12]. looking at different definitions reveals that the smart grid has been defined in different ways by different organizations and authors. here is one of them: “a „smart grid‟ is a set of software and hardware tools that enable generators to route power more efficiently, reducing the need for excess capacity and allowing two-way, real time information exchange with their customers for real time demand side management (dsm). it improves efficiency, energy monitoring and data capture across the power generation and transmission and distribution network [13]”. the need of implementation of ai within the smart grid was recognized by the professional and scientific community [5,14]. for example, the work in [15] surveys some of the most relevant applications of ann techniques to the field of energy systems. these applications range from a wide variety of purposes such as, modeling solar energy heat-up response [16], prediction of the global solar irradiance [17], adaptive critic design [18], or even for security issues as reviewed in [19]. the idea behind these applications is based on learning how system performances can be related to certain input values, for instance, how weather conditions (solar or wind) determine the energy output that can be expected [20]. in the past decades anns have emerged as a technology with a great promise for identifying and modeling data patterns that are not easily discernible by traditional implementation of artificial neural networks based ai concepts to the smart grid 413 methods. a comprehensive review of ann use in forecasting may be found in [21]. among the many successful implementations we may mention [22, 23, 24]. applications of anns for security purposes were discussed in [5, 6]. putting all together, at this moment, one may state that the ai concepts and especially anns may be implemented in the following aspects of the life of modern distributed energy resources.  various forecasting tasks, like renewable energy forecasting, storage forecasting and demand forecasting, that need intelligent rules. we will address this issue later on.  protection. being by nature fault tolerant, the anns are most likely a very good means for localizing the faults within a micro grid and in the same time to be capable to isolate it in case of a fault in the main grid.  intelligent diagnosis of equipment in micro grid. anns are a better option for diagnosing faults in electrical equipment for the following reasons:  they can interpolate from previous learning and give a more accurate response to unseen data, making them better at handling uncertainty.  they are fault tolerant, so they handle corrupt or missing data more effectively.  they are good non-linear function approximators by nature, making them better at equipment diagnostics.  they are more suitable for extracting the relationship between input and output in fault detection and diagnosis applications.  demand side management. it appears that demand-side management technologies that simply rely on reacting to control or price signals will not be enough. rather, what is necessary are more sophisticated approaches that are truly adaptive to the state of the grid, that are able to learn the correct response given any particular situation, and that can look ahead and predict both supply and demand trends in the near future, in order to prepare for future reductions in available supply, or to make the most effective use of supply when it is available.  intelligent data processing including data-mining. the main challenge to be tackled in the smart grid comes from the vast amount of information involved in it. in contrast to traditional grids, in which the consumption metering information was only retrieved monthly, smart grids present a new scenario in which all the interconnected nodes are gathering information about many different matters, and not only consumption (i.e. real-time prices, peak loads, network status, power quality issues, etc.) [25]. in this sense, one of the main challenges for computational intelligence is how to intelligently manage such an amount of information so that conclusions and inferences can be drawn to support the decision making process.  security. here we see the grid as a highly interconnected vulnerable communication network being exposed to all kinds of malicious cyber attacks such as eavesdropping, tempering and even jeopardizing the physical structure of the system. the two case studies we are reporting here are interrelated by the fact that they both use artificial neural networks to improve the performance of the grid since the one (prediction) may be seen as a base for protection of the grid from overload while the second is related to profiling the loads connected to the grid and protect them of misuse. in addition, both solutions rely on the measured data generated by modern metering systems [ami/amr][26, 27]. the paper is organized as follows. in the second paragraph we will give a brief review on the anns and the structures we are using for interpolation and extrapolation. then, in 414 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski the third paragraph the implementation of anns in load prediction related to next day peak-load forecasting will be given. note, the method implemented here is genera in the sense that we have application to other types of load prediction such as short, medium, and long term. the implementation of the very same ann structures to the new eavesdropping method related to the profiling of the loads (in this case a computer) to grid, will be described in the fourth paragraph. 2. a short review of the methods of ann implementation we will first briefly introduce the feed-forward neural networks that will be used as a basic structure for prediction throughout this paper. fig. 1 a fully connected feed-forward ann the network is depicted in fig. 1. it has only one hidden layer, which has been proven sufficient for this kind of problem [28]. indices: in, h, and o, in this figure, stand for input, hidden, and output, respectively. for the set of weights, w(k, l), connecting the input and the hidden layer we have: k=1,2,..., min, l=1,2,..., mh, while for the set connecting the hidden and output layer we have: k=1,2,...mh, l=1,2,..., mo. the threshold is here denoted as θx,r, r=1,2,..., mh or mo, with x standing for h or o, depending on the layer. the neurons in the input layer are simply distributing the signals, while those in the hidden layer are activated by a sigmoidal (logistic) function. finally, the neurons in the output layer are activated by a linear function. the learning algorithm used for training is a version of the steepest-descent minimization algorithm [29]. the initialization problem was solved according to literature [30]. the number of hidden neurons, mh, is of main concern. to get it we applied a procedure that is based on proceedings given in literature [28, 31, 32]. for prediction purposes we developed two structures [33]. the first one was named time controlled recurrent (tcr). it is depicted in fig. 2. the second was named feedforward accommodated for prediction (ffap). its structure is depicted in fig. 3. later on, these two structures were further elaborated as discussed in the succeeding paragraph. it is worth mentioning that, in our opinion, for deterministic forecasting one always needs at least two predictions being supportive to each other. since no knowledge of the forecasting outcome is available, the second prediction is only means to corroborate the first one. having in mind, however, that both predictions carry the same uncertainty, we decided for the best final prediction to accept the average of the two. implementation of artificial neural networks based ai concepts to the smart grid 415 fig. 2 time controlled recurrent (tcr) ann fig. 3 the feed-forward accommodated for prediction (ffap) structure 3. prediction of peak-load at suburban level electric load prediction is essential for power generation and operation [34]. it is vital in many aspects such as providing price effective generation, system security, and planning. among others, it enables: scheduling fuel purchases, scheduling power generation, planning of energy transactions, and assessment of system safety [35]. the load forecast errors imply high extra costs: if the load is underestimated one has extra costs caused by the damages due to lack of energy or by overloading system elements; if the load is overestimated, the network investment costs overtake the real needs, and the fuel stocks are overvalued, locking up capital investment. in a smart grid context, prediction allows for developing computationally efficient learning algorithms that can accurately predict both the prosumers‟ (produce/consumer) consumption and generation profiles (instead of only the usage profile for a consumer) as well as the price of electricity in real time in order to inform profitable trading decisions. given this, a number of researchers have suggested that more sophisticated tariffs, such as real-time pricing (rtp) or spot pricing (where the price per kwh of electricity consumed is different for each half-hour and is provided to the consumer a day, or a few hours, ahead of time), in conjunction with more sophisticated „agents‟ that can autonomously respond to these price signals, would avoid this [36]. consequently, the quality of load forecasts has greatly influenced the economic planning in areas such as generation capacity, purchasing fuel, assessing system‟s security, maintenance scheduling, and energy transmission [37]. 416 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski the power load value is determined by several environmental and social factors. seasonal and daily profiles are the most apparent influential. temperature and air humidity are the primary parameters determining the energy consumption generally and especially in urban residential areas. working times, holidays, and weekends are characterized by specific load profile. environmental disasters, sudden increase of large loads or outages, and important social events are further complicating the load-time function. all together, the load curve is a nonlinear function of many variables that map themselves into it in an unknown way. in the next, our newest results in the application of artificial neural networks (anns) for prediction of daily peak loads at suburban level will be presented. 3.1. problem formulation we took data for the implementation of our method from the unite 1999 competition file [38]. the task was: given the peak values for the previous days, predict the peak-load value for the next day. according to studies of the behaviour of the consumers, in general, one may expect the peak-value to happen at about 19.00 hours. there are some exceptions but these are not influencing the general method we implement. when speaking about the very peakvalue one may recognize a regular periodicity with, unfortunately, some exceptions. fig. 4 represents the daily peak-value for one month (april 1997) extracted from [38]. note the difficulty to recognize the periodicity of the phenomenon. fig. 4 the daily peak-value for one month (april 1997) extracted from [38] the problem may be stated as follows. given the series (tk, f(tk)), k=1,2, ....n , where tk, is the time instant – namely day in the calendar, f(tk) the peak-value at that day, and k the counter, the last known peak-value is at the n-th day. our task is to predict the peak-value at the (n+1)st day. for the purpose of prediction in the subject of electricity we developed two ann structures named etcr and effap [39] which we implement simultaneously. the idea is the following: when predicting one is making a step into the dark. if one wants to have any confidence in the prediction one has to have at least two predictions that support each other. then, since both are of equal importance, instead of accepting one of them the average is calculated and stated as final result. we will give some rudimentary description of etcr and effap anns in the next. implementation of artificial neural networks based ai concepts to the smart grid 417 for the verification of the method we undertook the task to predict the daily peakvalues in may 1997 and to compare with the data given by the unite 1999 competition. 3.2. the etcr solution the etcr ann structure tailored for the application at hand is depicted in fig. 5. the name stands for extended time controlled recurrent. it is a recurrent ann with two feed-back loops. the first one is feeding back the peak-values of the most recent days while the second is feeding back the peak values from two previous weeks but of the same day in the week as the one to be predicted. in this way we implement two principles. first, we claim that only the most recent values have influence to the current value and there is no need for a huge amount of useless data. second, one has to exploit the pseudo-periodic behaviour of the consumers since same days in the week have similar load profile. the etcr is supposed to approximate the function: 1 2 3 4 7 14( , , , , , , )i i i i i iiy f i y y y y y y      (1) where the samples are the daily-peak values. when progressing in time i will raise its value by one. fig. 5 etcr: extended time controlled recurrent according to (1) fig. 6 the extended feed forward accommodated for prediction (effap) according to (2) as for the first test of the method we predicted the peak-value for april 30. 1997 what according to the unite 1999 was 609 kw. the resulting ann had 7 input terminals, 2 output terminals, and 5 neurons in the hidden layer. after bringing a proper excitation we got as a prediction y={625.3241}, what is depicted in table 1. 3.3. the effap solution the effap ann tailored for the application at hand is depicted in fig. 6. the name stands for extended feed forward accommodated for prediction. it is a feed forward ann with three inputs one of them being the time i, while the rest are the peak-values from the previous weeks. there are five outputs each of them supposed to learn the same 418 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski function but shifted in time for one day. the following set of functions approximates the phenomenon: 1 2 3 6 131{ , , , , ,} ( , , )i i i i i iiy y y y y i y y      f . (2) of course, this network is approximating the very same function as the etcr does but in a different manner. as a result for april 30 th 1997, the effap ann obtained after training had 3 input neurons, 5 output neurons, and 5 neurons in the hidden layer. after proper excitation the following prediction was obtained y= {653.2675}. the result is again depicted in table 1. table 1 prediction of the peak-value consumption at april 30 th 1997 of the unite data no. expected value etcr % effap % average value of the prediction % number of hidden neurons etcr effap 1 609 625.3241 2.68 653.2675 7.27 639.2958 4.975 5 5 3.4. overall solution as stated above, the final solution to the prediction problem in our method is obtained by averaging the etcr and the effap predictions. it is shown in table 1, too. it is encouraging. to get a complete picture about the capabilities of the method we made a prediction for every day in may 1997. our first partial results were published in [40] while here we are giving complete results for the whole month as shown in fig. 4. these allow for real evaluation of the properties of the method. by inspection of fig. 7 we conclude that the method proposed may be implemented for prediction of the peak-load at suburban level. the largest discrepancies between the actual and the predicted values are lower than 17% even in the worst case. in 22 out of 30 days the error was lower than 10%, while in 12 out of 30 days the error was lower than 5%. fig. 7 error of prediction (y-axis) as a function of the day in the month may 1997 (x-axis) implementation of artificial neural networks based ai concepts to the smart grid 419 4. a very specific view to the security within the research of the behaviour of computers from the power consumption point of view [10], different software packages were implemented in order to create the energy profile of the computer under different “loading” conditions. we noticed, however, that not only the power consumed, but the thd was dependent on the application running within the pc. so, table 2 contains all harmonics generated by one personal computer (dell optiplex 980, intel core i7 cpu @ 2.8ghz, 4gb ram, 500gb hdd) under different working conditions. approximately 50 harmonics were observed in a sample (200ms, 10000 samples) of a grid current. since even harmonics have incomparably smaller values than the odd ones, in table 2 only the dc, the main, and the odd harmonics are presented. fig. 8. illustrates two columns of table 2. table 2. odd harmonics extracted from one string measurement in eight different states of the workstation harm. no. off (1) idle (2) video (3) cpu arithmetic (4) gpu rendering (5) multimedia cpu (6) physical disks (7) file system benchmark (8) dc -0.55 -0.84 1.3 -0.52 -0.68 -1.3 -0.23 -0.51 1 89.7 400.26 475.4 785.73 747.73 394.33 381.54 411.72 3 3.05 47.9 54.03 34.6 35.84 47.79 48.05 47.73 5 8.55 23.18 23.52 28.7 28.42 22.83 23.53 24.14 7 8.94 11.41 12.3 17.43 16.77 9.74 6.96 9.61 9 3.08 9.19 7.7 10.12 9.26 9.17 8.63 9.5 11 8.76 6.17 7.24 12.27 11.13 6.12 5.36 5.53 13 2.77 1.4 1.73 6.01 5.81 1.99 2.49 2.96 15 6.28 9.81 12.19 5.98 6.84 9.32 9.94 8.92 17 4.81 3.66 5.1 8.91 9.9 5.6 3.76 3.71 19 0.69 4.16 5.05 5.74 5.68 3.3 5.75 7.31 21 0.92 7.39 6.52 4.89 5.12 6.65 5.55 5.29 23 0.62 5.17 7.15 6.06 7.19 5.55 4.56 4.3 25 0.53 4.12 6.2 5.86 4.63 4.6 5.2 4.76 27 0.94 5.18 8.31 2.29 1.28 4.2 3.07 6.35 29 0.62 6.61 6.35 2.94 4.3 5.85 4.93 6.26 31 0.54 4.89 3.64 2.54 3.61 4.98 3.96 5.16 33 1.08 7.58 5.23 4.48 3.67 7.84 8.2 7.34 35 0.47 3.98 2.72 1.71 1.59 4.27 4.17 2.94 37 0.45 2.61 2.09 0.51 0.93 2.98 3.19 2.2 39 0.58 3.9 2.83 2.94 3.55 3.97 4.7 2.81 41 0.54 1.29 0.97 1.26 0.56 1.54 0.96 1.11 43 0.24 1.28 0.46 1.24 0.67 1.39 1.24 1.82 45 0.27 1.91 0.85 1.44 1.79 2.2 1.93 1.77 47 0.39 0.94 0.98 0.34 0.48 0.55 0.9 1.03 49 0.21 0.36 0.53 1.95 1.78 0.7 1.34 0.95 420 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski fig. 8 measured odd harmonics in two cases: physical disc drive active and cpu loaded by arithmetic computations. the first harmonic is omitted for convenience question is: what would this table have to do with security? there are many security issues related to the grid. among them the most vulnerable subsystem, looking from the ict point of view, is the advanced metering infrastructure (ami). while it could bring significant benefits, it is potentially subject to security violations such as tampering with software in the meters, eavesdropping on its communication links, or abusing the copious amount of private data the new meters are able to collect. in addition to securing market sensitive data from competitors, information systems for the power grid need to defend against to malicious attacks [41] that intend to harm the power grid as a whole. the more comprehensive an information system becomes, the greater the consequences of a successful attack and thus the need for security measures increases. one of the ways of eavesdropping a home, an office, or a company is monitoring the power consumption and creating an energy profile of the subject [42]. having this information a large number of malicious actions can be undertaken such as burglaries and other damaging security breaches. here we expose an additional way of eavesdropping where the harmonic structure of the current drawn from the grid is base for information on the activities within a home or an office. the problem will be illustrated on the example depicted in table 2. here the pc is taking the role of the whole which is supervised. we will show in the next how one can precisely find the state in which the computer is, based on measurements of the supply current taken by its ac/dc converter from the grid. note, in the example depicted in table 2, power factor correction was applied within the converter. while there are several possibilities that allow information to be extracted from table 2 about the state in which the computer is, here we will use anns. an ann was trained to create a response recognizing which one of the sets of harmonics of table 2 is present at its input. its structure is depicted in fig. 9. to simplify, for the proper vector of harmonics, the corresponding output of the ann was forced to unity while the rest of the outputs were kept at zero. in other words, it was trained to recognize which software was running within the computer. full success was achieved meaning, after training, the ann was classifying perfectly. implementation of artificial neural networks based ai concepts to the smart grid 421 fig. 9 artificial neural network that eavesdrops the personal computer based on information on harmonics in its mains current to make the problem harder, i.e. to introduce the possible variations due measurement errors, we transformed table 2 so that every entry was recalculated by the formula [1 (2 1) 0.025]newx x rnd      , (3) where rnd is a pseudo-random number with uniform distribution within the [0,1] segment. in other words a “noise” of amplitude (peak-to-peak) as large as 5% of the harmonic value was added as “measurement disturbance”. again, as can be seen from table 3, excellent classification was obtained. table 3 responses of the ann to noisy input data ann‟s output→ input vector↓ off idle video cpu arithmetic gpu rendering multimedia cpu physical disks file system benchmark (1) 0.94189 -0.00826428 -4.98446e-05 0.0596502 0.00545632 -2.68923e-05 0.00254522 0.00128351 1 0 0 0 0 0 0 0 (2) -0.100789 0.936809 -6.30066e-05 0.107029 -0.00390563 -4.56815e-05 0.0353001 0.0301201 0 1 0 0 0 0 0 0 (3) 0.0747284 -0.0347075 1.00742 -0.0946782 0.0368009 6.60139e-06 0.0172143 -0.00950488 0 0 1 0 0 0 0 0 (4) 0.0530374 -0.00513355 -3.01133e-05 0.94394 0.00599003 4.07148e-06 -0.00314594 0.0039932 0 0 0 1 0 0 0 0 (5) -0.0714551 0.141341 0.000249561 0.347383 0.694706 2.93044e-05 -0.0165517 -0.0935344 0 0 0 0 1 0 0 0 (6) -0.0390391 -0.068559 -2.64327e-05 0.0464038 -0.0182126 0.994595 0.0357881 0.0513166 0 0 0 0 0 1 0 0 (7) 0.0221675 -0.0245939 -7.75624e-06 -0.0287134 0.0235965 -8.00252e-07 1.01758 -0.010466 0 0 0 0 0 0 1 0 (8) 0.0524894 -0.0178626 -6.26366e-05 -0.0587603 0.0177179 1.40437e-06 0.00103932 1.00386 0 0 0 0 0 0 0 1 422 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski finally, eight new sets of “harmonics” were created artificially by permutations within the rows in table 2 and the newly created columns were used as excitation to the ann. none succeeded to deceive the network. to conclude, there are robust classification mechanisms whose implementation may give to a malicious attacker, having a sophisticated tool based on current monitoring, an opportunity to monitor every activity within a computer and, in general, a data centre or similar. note, the spectrum of a current taken by a household is not much more complicated than the one of the computer since the main consumers in the household are linear loads and do not generate additional harmonics. from that point of view, we consider our method applicable to a broader list of situations then just a computer. 5. conclusion the modern electricity distribution system gradually evolves into a very large and very complex structure in which ict is getting more and more important role. it is nowadays most frequently referred to as smart grid. there is almost unlimited number of possible applications of ict subsystems within the smart grid and one is not to say that smart grid is a fixed structure whose capabilities are finally set. a special offer of the ict to the smart grid is artificial intelligence and particularly the artificial neural networks. here we represent our attempts to contribute to the development of the smart grid toward an advanced, reliable and secure system. the case studies reported are part of the same project since the same methodology is implemented and they are considering two important and interrelated aspects: the profiling of the load and the protection of the grid. in particular, we discussed some of the most recent results produced within the laboratory for electronic design automation at the university of niš, serbia, which are related to load prediction at suburban level, and a new way of cyber-attack to the ict connected to the grid. both results are based on our own methodology of measurements and own concepts of implementation of anns. as for the load prediction it is worth mentioning that the results reported are part of a set of implementation of our concept to short term [43], medium term [40], and long term [44] prediction of electricity loads. when appropriate, e.g. short term prediction, real-time implementation of the prediction was implemented [39]. the results related to the profiling the computer looking at it from the grid, however, are brand new and will be further elaborated and implemented to more complex computer loads such as data centres or company networks. acknowledgement: this research was partly funded by the ministry of education, science and technological development of republic of serbia under contract no tr32004. references [1] v. litovski, p. petković, ”why the power grid needs cryptography?”, proc. of the symposium on industrial electronics indel 2008, banja luka, 06.11.-08.11., 2008, pp. 75-81. reprinted in: electronics, issn 1450-5843, vol. 13, no. 1, june 2009, pp. 30-36. [2] m., dimitrijević, j., milojković, s., slobodan bojanić, o., nieto-taladriz, and v., litovski, “ict and power: new challenges and solutions”, int. j. reasoning-based intelligent systems, vol. 5, no. 1, 2013, pp. 32-41. publisher: inderscience enterprises, issn: 1755-0556, e-issn: 1755-0564. implementation of artificial neural networks based ai concepts to the smart grid 423 [3] -,“gesi smarter 2020: the role of ict in driving a sustainable future”, the boston consulting group, http://gesi.org/smarter2020. [4] s. iyer, “cyber security for smart grid, cryptography, and privacy”, hindawi publishing corporation, int. j. of digital multimedia broadcasting, vol. 2011, article id 372020, 8 pages. [5] w. wang, and z. lu, “cyber security in the smart grid: survey and challenges”, computer networks, vol. 57, pp. 1344–1371, 2013. [6] f. aloul, a. r. al-ali, r. al-dalky, m. al-mardini, and w. el-hajj, “smart grid security: threats, vulnerabilities and solutions”, international journal of smart grid and clean energy, vol. 1, no. 1, pp. 1-6, 2012. [7] r. harmon, h. demirkan, “the next wave of sustainable it”, it professional, vol. 13, no. 1, pp. 19-25, jan./feb. 2011, doi:10.1109/mitp.2010.140. [8] -,“electricity consumption and efficiency trends in the enlarged european union”, institute for environment and sustainability, 2007, http://www.eubusiness.com/ topics/energy/electricity-jrc.bk/ [9] a. p. bianzino, a. k. raju, d. rossi, “greening the internet: measuring web power consumption”, it pro, january/february 2011, published by the ieee computer society, pp. 48-53. [10] o. nieto, et al., “energy profile of a personal computer”, proceedings of the lvi conf. of etran, zlatibor, serbia, june 2012, isbn 978-86-80509-67-9, proc. on a disc, paper el3.3-1-4. [11] r. adam, w. wintersteller, from distribution to contribution. commercializing the smart grid, booz & company, munich, 2008. [12] j. miller, “the smart grid – how do we get there?”, smart grid news, june 26, 2008. http://www.smartgridnews.com/ [13] -,“smart 2020: enabling the low carbon economy in the information age”, climate group, gesi 2008, www.theclimategroup.org/assets/resources/publications/smart2020 report.pdf. [14] d. ramchurn, p. vytelingum, a. rogers, a., and n. r. jennings, “putting the 'smarts' into the smart grid: a grand challenge for artificial intelligence”, communications of the acm , vol. 55, no. 4, april 2012. [15] s. kalogirou, k. metaxiotis, and a. mellit, “artificial intelligence techniques for modern energy applications”, intelligent information systems and knowledge management for energy: applications for decision support, usage, and environmental protection, igi global, pp. 1-39, 2010. [16] s. kalogirou, c. neocleous, and c. schizas, “artificial neural networks for modelling the starting up of a solar steam generator”, applied energy, vol. 60, pp. 89– 100, 1998. [17] p. l. zervas, h. sarimvies, j. a. palyvos, n. g. c. markatos, “model-based optimal control of a hybrid power generation system consisting of photovoltaic arrays and fuel cells”, journal of power source, vol. 181, pp. 327–338, 2008. [18] p. j. werbos, “approximate dynamic programming for real time control and neural modelling”. in white da and sofge da (eds.), handbook of intelligent control, van nostrand reinhold, new york, 1992, pp. 493-525. [19] y. mansour, e. vaahedi, m. a. el-sharkawi, “dynamic security contingency screening and ranking using neural networks”, ieee trans power syst., vol. 8, no. 4, pp. 942–950, july 1997. [20] d. riley, g. k. venayagamoorthy, “characterization and modeling of a grid connected photovoltaic system using a recurrent neural network”, in proc. ieee int. joint conf. neural networks, san jose, ca, july 31–aug. 5, 2011. [21] b. g. zhang, e. patuwo, and m. y. hu, “forecasting with artificial neural networks: the state of the art”, international journal of forecasting, vol. 14, no. 1, pp. 35-62, march 1998. [22] j. g. m . zade, and r. noori, “prediction of municipal solid waste generation by use of artificial neural network: a case study”, int. j. environmental reserch, vol. 2, no. 1, pp. 13-22, 2008. [23] s. canu, y. grandvalet, and x . ding, “one step ahead forecasting using multilayered perceptron”, working paper de i'universite de technologie de compiegne. [24] j. connor, and r. douglas martin, “recurrent neural networks and robust time series prediction”, ieee trans. on neural networks, vol. 5, no. 2, pp. 240-254, march 1994. [25] y. simmhan, s. aman, b. cao, m. giakkoupis, a. kumbhare, q. zhou, d. paul, c. fern, a. sharma, v. prasanna, “an informatics approach to demand response optimization in smart grids”, technical report, computer science dept., usc, 2011. [26] c. king, “advanced metering infrastructure (ami) overview of system features and capabilities”, emeter corporation, https://www.smartgrid.gov/sites/default/files/doc/files/overview_ami_system _features_capabilities_200405.pdf [27] m. dimitrijević, and v. litovski, „power factor and distortion measuring for small loads using usb acquisition module”, journal of circuits, systems, and computers, vol. 20, no. 5, pp. 867-880, august 2011. [28] t. masters, practical neural network recipes in c++, academic press, san diego, 1993. 424 m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski [29] z. zografski, “a novel machine learning algorithm and its use in modeling and simulation of dynamical systems”, proc. of s"" annual european computer conference, ieee compeuro'91, bologna, italy, pp. 860-864, 1991. [30] t. denoeux and r. lengelle, “initializing back propagation networks with prototypes”, neural networks (pergamon press), vol. 6, pp. 351-363, 1993. [31] g.-b. huang and h. a . babri, “upper bound on the number of hidden neurons in feedforward networks with arbitrary bounded nonlinear activation function”, ieee trans, on neural networks, vol. 9, pp. 224228, 1998. [32] e. b. baum and d. haussler, “what size net gives valid generalization”, neural computing, vol. 1, pp. 151-160, 1989. [33] j. milojković, and v. litovski, “comparison of some ann based forecasting methods implemented on short time series”, 9th symposium on neural network applications in electrical engineering, neurel-2008, pp. 179-179, belgrade, serbia, 2008. [34] h. m. al-hamadi, s. a. soliman, “short-term electric load forecasting based on kalman filtering algorithm with moving window weather and load model”, electric power systems research, vol. 68, no. 1, 2004, pp. 47-59. [35] s., tzafestas, and e., tzafestas, “computational intelligence techniques for short-term electric load forecasting”, journal of intelligent and robotic systems, vol. 31, no. 1-3, 2001, pp. 7-68. [36] f. schweppe, b. daryanian, and r. tabors, “algorithms for a spot price responding residential load controller”, power engineering review vol. 9, no. 5, pp. 49–50, 1989. [37] f. liu, r. d. findlay, q. song, “a neural network based short term electric load forecasting in ontario canada”, in int. conf. on computational intelligence for modelling control and automation, and int. conf. on intelligent agents, web technologies and internet commerce, (cimca-iawtic'06), 2006, pp. 119 – 125. [38] worldwide competition within the eunite network. (2001). [online] available: http://neuron.tuke.sk/ competition [39] j. milojković, v. litovski, “dynamic one step ahead prediction of electricity loads at suburban level”, proc. of the first ieee int. workshop on smart grid modeling and simulation – at ieee smartgridcomm 2011, sgms2011, brussels, october 2011, proc. on disc, paper no. 25. [40] j. milojković, v. litovski, “one day ahead peak electricity load prediction”, ix symposium industrial electronics, indel 2012, banja luka, november 2012, pp. 261-267. [41] f. cleveland, “iec tc57 security standards for the power system information infrastructure beyond simple encryption”, june 2007. iec tc57 wg15 security standards white paper ver. 11. http://www.xanthus-consulting.com/pages/publications.htm [42] m. andrejević stošović, m. dimitrijević, v. litovski, “computer security vulnerability seen from the electricity distribution grid side”, applied artificial intelligence, taylor & francis ltd., 2014, accepted for publication. [43] j. milojković, and v. litovski, “new ann models for short term forecasting of electricity loads”, proc. of the 7th eurosim congress on modelling and simulation vol.2: full papers (cd), czech technical university in prague, faculty of electrical engineering, dept. of computer science and engineering, prague, czech republic isbn 978-80-01-04589-3, september 2010. [44] j. milojković, v. litovski, o. nieto-taladriz, and s. bojanić, “forecasting based on short time series using anns and grey theory – some basic comparisons”, in proc. of the 11th int. work-conference on artificial neural networks, iwann 2011, june 2011, torremolinos-málaga (spain). j. cabestany, i. rojas, and g. joya (eds.): part i, lncs 6691, pp. 183–190, 2011, © springer-verlag berlin heidelberg 2011. issn: 0302-9743. instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 179 185 doi: 10.2298/fuee1702179d a new lumped element bridged-t absorptive bandstop filter  suhash c. dutta roy formerly at the department of electrical engineering, indian institute of technology, delhi, new delhi india abstract. following a brief review of previous work on bandstop filters, the inadequacy of a recent work to obtain a perfect notch or perfect absorption at the notch frequency ω0 is demonstrated. a simple and elegant alternative solution, based on purely analytical arguments, is then presented. the resulting network is shown to achieve perfect matching as well as perfect absorption at the notch frequency and has several other advantages. a comparison has also been made with the conventional bridged-t band-stop filter. key words: bandstop filter, bridged-t network, circuit design. 1. introduction bandstop filters are circuits which reject, to within a specified tolerance, a band of frequencies around a centre frequency at which there is complete rejection. such filters are known by various names, such as band rejection filters, notch filters, null networks etc. and are required in many situations in communication and instrumentation. bandstop filters have fascinated a large number of researchers, including the present author, who has written papers on the analysis [1-7], design [8] and its limitations [9], and analysis and applications of dual input techniques to such filters [10-12]. all these contributions relate to analog circuits. bandstop filters are also required in digital signal processing, and the author and his students have done extensive work on digital notch filters, using both fir and iir techniques [13-21]. of these, [21] is a review of fir notch filter design, which appeared in this journal. at low frequencies, passive rc networks are mostly used, except in situations where a selectivity, defined as (notch frequency)/(3 db stop bandwidth), is required to be more than half. in the latter cases, either active rc filters or lc networks are to be used. for high frequencies, lc networks are easily designed and implemented. at microwave frequencies, distributed networks are preferred over lumped networks, although the latter  received november 3, 2016 corresponding author: suhash c. dutta roy department of electrical engineering, indian institute of technology, 164, hauz khas apartments, new delhi 110016, india (e-mail: s.c.dutta.roy@gmail.com) 180 s. c. dutta roy have the advantage of occupying less space, and as is well known, space is a premium in microwave integrated circuits. examples of lumped element microwave bandstop filters can be found in [22-29], while bandstop filters with distributed elements can be found in [30,31]. 2. scope and organization of the paper this paper is concerned with the design of a band-stop filter which achieves a perfect notch and perfect absorption at some frequency ω0. in this context, we first demonstrate, in section 3, the inadequacy of a recent solution proposed by chieh and rowland [32], by network theoretic arguments. in the next section, we present a new, simple and elegant alternative design, based on purely analytical arguments. the resulting network is shown to achieve perfect matching as well as perfect absorption at the notch frequency, and has several other advantages. a normalized design is discussed in section 5, and the simulation results are presented. a comparison of the new design with the conventional bridged-t bandstop filter is made in section 6. finally, section 7 gives the concluding comments. 3. chieh and rowland's design chieh and rowland [32] proposed the symmetrical network of fig. 1 where z1(jω)=1/(jωc), (1a) z2(jω)=r1+jωl1+1/( jωc1) (1b) and z3(jω)=r2+jωl2+1/(jωc2). (1c) and both z2 and z3 resonate at the same frequency ωo. for ready reference, we reproduce here the expressions for the z-parameters of the network and the scattering parameters, in slightly different forms: fig. 1 the bridged-t network z11=z22=z2+(z1 2 +z1z3)/(2z1+z3), (2) z12=z21=z2+z1 2 /(2z1+z3), (3) s12=s21=2z21 zo/[(z11+ zo) 2 -z21 2 ], (4) a new lumped element bridged-t absorptive band-stop filter 181 and s11=s22=(z11 2 z21 2 ]/[(z11+ zo) 2 -z21 2 ]. (5) note from (2) and (3) that z11=z21+z1z3/(2z1+z3). (6) from (4) and (5), we observe that for a perfect notch as well as perfect absorption at the frequency ωo, we require z21(jωo)=0 (7) and z11(jωo)= zo. (8) from (1), we have z1(jωo)=1/(jωoc), z2(jωo)=r2 , and z3(jωo)=r1. (9) substituting these values in (3) gives, on simplification, z21(jωo)= r2+1/[ jωoc(2+ jωoc r1)], (10) which cannot be made zero. also, under this condition, z11(jωo)= r2+(1+ jωoc r1)/[ jωoc(2+ jωoc r1)], (11) which cannot be equal to zo if the latter is purely resistive, which is usually the case. equation (8) can be satisfied only if zo is a complex series rc impedance. thus the network of fig. 1 with the element values given by (1) can achieve neither perfect notch nor perfect absorption. 4. the new design the problem to be solved can be restated as follows: given ωo and ro and the network topology of fig.1, find z1, z2 and z3 such that z21(jωo)=z2(jωo)+[z1(jωo)] 2 /[2z1(jωo)+z3(jωo)]=0, (12) and z11(jωo)=z21(jωo)+z1(jωo)z3(jωo)/[2z1(jωo)+z3(jωo)]=ro. (13) where zo has been assumed to be resistive, equal to ro. in view of (12), (13) reduces to z11(jωo)=z1(jωo)z3(jωo)/[2z1(jωo)+z3(jωo)]=ro. (14) from (14), z3 is expressed in terms of z1 as z3(jωo)=2roz1(jωo)/[z1(jωo)-ro]. (15) combining this with (12) and simplifying, we get z2(jωo)=[ro-z1(jωo)]/2. (16) we can now choose a z1. if we take z1(jωo)=1/(jωoc), as in [1], then (15) gives, on simplification, z3(jωo)=[2ro/(1+ωo 2 c 2 ro 2 )]+jωo[2cro 2 /(1+ωo 2 c 2 ro 2 )] (17) 182 s. c. dutta roy which represents a series combination of an inductance l3 and a resistance r3, where r3=[2ro/(1+ωo 2 c 2 ro 2 )] and l3=2cro 2 /(1+ωo 2 c 2 ro 2 ). (18) similarly, (16) gives z2(jωo)=(ro/2)+jωo/(2ωo 2 c), (19) which also represents a series combination of an inductance l2 and a resistance r2, where r2=(ro/2) and l2=1/(2ωo 2 c). (20) in theory, c can be chosen to have any value, but as we shall see, it will be most convenient to choose c from the expression for r3 given in (18), which gives c=[(2ro/r3)-1] 1/2 /(ωoro) (21) note that if we choose c=1/(ωoro), (22) then r3 becomes equal to ro. also, under this condition, (17) and (18) give l3=ro/ωo and l2=ro/(2ωo). (23) this choice of c is advantageous because then z3 can be obtained by a series combination of z2 and z2 and there is no spread in the element values of the network. also note that lossy inductors can be used with ease because their losses can be absorbed in their series resistances. finally, the element valus of the network are consolidated as c=1/(ωoro), l3=2l2=ro/ωo and r3=2r2= ro. (24) fig. 2 the normalized design of the absorptive bandstop filter 5. a normalized design it is always convenient to have a normalized design which can be denormalized by impedance and frequency scaling. let ro=1 ohm and ωo=1 rad/sec. then (24) gives the element values as c=1f, l3=2l2=1h and r3=2r2=1 ohm. (25) a new lumped element bridged-t absorptive band-stop filter 183 the resulting network is shown in fig. 2. this network has been simulated with matlab and the obtained plots of │s11(jω)│and│s21(jω)│are shown in fig. 3. these plots exactly match the theoretical predictions. 6. comparison with the conventional bridged-t bandstop filter it may be noted that compared to network proposed in [32], the conventional bridgedt bandstop filter [3] performs better because it achieves a perfect notch but not perfect absorption. in this network, z1(jωo)=1/(jωc), z2(jωo)= r+jωl, and z3(jω)=r. (26) the network then achieves a perfect notch at ω=[2/(lc)] 1/2 under the condition l=crr, but it cannot achieve s11(jωo)=0 unless zo is a parallel combination of a capacitor c and a resistor r/2, which is not the usual case. also, if we choose r=r, then there is no spread in the component values. further, as in the proposed alternative, a lossy inductor can be used here. in addition, in comparison with the networks of [32] and that proposed here, it uses the least number, viz. three of reactive elements, yielding a transfer function of order three. 10 -1 10 0 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 fig. 3 performance of the normalized design. the upper curve is a plot of │s21(jω)│and the lower curve represents │s11(jω)│ 7. concluding comments it has been shown that the network proposed in [32] achieves neither a perfect notch nor perfect absorption. an alternative solution is proposed here purely by analytical, rather than physical or heuristic arguments, which achieves these two objectives simultaneously. the element values are obtained very simply, rather than by numerical and parametric methods as in [32]. also, the new solution uses only two capacitors, instead of four, which 184 s. c. dutta roy reduces the order of the transfer function by two. by an appropriate choice of the elements, there is no spread in the element values. a normalized design has been presented and the resulting characteristics of │s11(jω)│and│s21(jωo)│ have been plotted. a comparison of the two circuits has also been made with the conventional bridged-t bandstop filter. acknowledgement: the author thanks professor y. v. joshi for his help in the preparation of the manuscript and performing the simulation. references [1] s. c. dutta roy, ―analyzing the parallel-t rc network – yet another method‖, iete j. educ., vol. 44, pp. 111-116, [2] s. c. dutta. roy, ―a quick method of analyzing parallel ladder networks‖, int. j. elect. eng. educ., vol. 13, pp. 70-75, jan. 1976. [3] s. c. dutta roy, ―miller’s theorem revisited‖, circuits, syst. signal proces., vol. 19, pp. 487-499, dec. 2000. [4] s. c. dutta roy, ―on second order digital bandpass and bandstop filters", iete j. educ., vol. 49, pp. 5963, may-aug. 2008. [5] s. c. dutta roy, ―interference rejection in a uwb syetem: an example of lc driving point synthesis‖, iete j. educ., vol. 50, pp. 55-58, may-aug. 2009. [6] s. c. dutta roy, ―on some three terminal lumped and distributed rc null networks‖, ieee trans. circuit theory, vol. ct-11, pp. 98-103, mar. 1964. [7] s. c. dutta roy and b. a. shenoi, ―notch networks using distributed rc elements". proc. ieee, vol. 54, pp. 1220-1221, sept. 1966. [8] s. c. dutta roy. "on the design of parallel-t resistance capacitance networks for maximum selectivity‖, j.ite, vol. 8, pp. 218-223, sept. 1962. [9] s. c. dutta roy, ―parallel—t rc network : limitations of design equations and shaping the transmission characteristic‖, lndian j. pure appl. phys., vol. 1, pp.175-181, may 1963. [10] s. c. dutta roy, "dual input null networks‖, proc. ieee, vol. 55, pp. 221-222, feb. 1967. [11] s. c. dutta roy and n. choudhury, ―an application of dual input networks", proc. ieee, vol. 56, pp. 647-646. may 1970. [12] s. c. dutta roy and r. p. sah. "dual input distributed rc notch filter‖, lnd. j. pure appl. phys., vol. 9, pp. 762-763, sept. 1971. [13] s. c. dutta roy, s. b. jain and b. kumar, "design of digital notch filters‖, iee proc. – vision, image signal process., vol. 141, pp. 334-338, oct. 1994. [14] b. kumar, s. b. jain and s c. dutta roy, "on the design of fir notch filters", iete j. res., vol. 43, pp. 65-68, jan.feb. 1997. [15] s. b. jain, b. kumar and s. c. dutta roy, "design of fir notch filters by using bernstein polynomials‖, int. j. circuit theory applic., vol. 25, pp. 135-139, mar.-apr. 1997. [16] s. c. dutta roy, s. b. jain and b. kumar, ‖design of digital fir notch filters from second order llr prototype", iete j. res., vol. 43, pp. 275-279, jul.-aug. 1997. [17] s. b. jain, b. kumar and s. c. dutta roy, ‖semi-analytic method for the design of digital fir filters with specified notch frequency", signal process., vol. 59, pp. 235-241, 1997. [18] y. v. joshi and s. c. dutta roy, ‖design of llr digital notch filters‖, circuits, syst. signal process., vol. 16, pp. 415-427, 1997. [19] y. v. joshi and s. c. dutta roy. "design of lift notch filters with different passband gains‖,iee proceedings — vision, image signal process., vol. 147, pp. 11-19, feb. 1998. [20] y. v. joshi and s. c. dutta roy. "design of iir multiple notch filters based on all-pass filters‖, ieee trans.circuits syst.-ii: trans. briefs, vol, 46, pp. 134-138, feb. 1999. [21] s. c. dutta roy, b. kumar and s. b. jain, ―fir notch filter design – a review‖ (invited paper), facta universitatis (nis) – series : electron. energ., vol. 14, pp. 295-327, dec. 2001. [22] a. s. alkanhal, ―compact bandstop filters with extended upper passbands‖, active and passive components, vol. 2008, doi: http://dx.doi. org/10.11552008/356049. http://dx.doi/ a new lumped element bridged-t absorptive band-stop filter 185 [23] o. p. gupta and r. j. wenzel, ―design tables for a class of optimum new bandstop filters‖, ieee trans. microw. theo. tech., vol. 18, pp. 402-404, july [24] k. s. k. yeo and p. vijaykumar, ―quasi-elliptic microstrip bandstop filters using tap coupled open loop resonators‖, prog. electromag. res., vol. 35, pp. 1-11, 2013. [25] y. s. mezaal, h. t. eyyuboglu and j. k. ali, ―wide bandpass and narrow bandstop microstrip filters based on hilbert fractal geometry: design and simulation results‖, plos one, vol. 9, e115412, 2014. [26] m. m. bait-sawailam, ―miniaturized bandstop filters using slotted complementary networks‖, int. j. dig. inform. and wireless commun.,vol. 4, pp. 401-407, mar. 2014. [27] d. r. jachowski, ―narrowband absorption bandstop filtres with multiple signal paths‖, us patent no. 7323955b2, pub: jan. 29 2008. [28] w. m. pathelbab and m. b. steer, ―design of bandstop filters utilising circuit prototypes‖, iee micrpw, ant. propag., vol. 1, pp. 523-526, march 2007. [29] d. r. jachowski, ―tunable lumped element notch filter with constant bandwidth‖, in proc. of the ieee int. wireless inf. technol. syst. conf., pp. 1-4, 2010. [30] t. c. lee, j. lee, e. j. naglich and d. peroulis, ―octave tunable lumped element notch filter with resonator q-independent zero reflection coefficient‖, in proc. of the ieee mtt-s int. digest, pp. 1-4, 2014. [31] j. lee, t. leeand w. j. chappel, ―lumped element realization of absorptive bandstop filter with anomalously high spectral isolation‖, ieee trans. microw. theo. tech., vol. 60, pp. 2424-2430, aug. 2012. [32] j. s. chieh and j. rowland, ―quasi-lumped element bridged-t absorptive bandstop filter‖, ieee microw. wireless compon. lett., vol. 26, pp. 264-266, apr. 2016. 10503 facta universitatis series: electronics and energetics vol. 35, no 2, june 2022, pp. 145-154 https://doi.org/10.2298/fuee2202145м © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd review paper prior knowledge based neural modeling of microstrip coupled resonator filters zlatica marinković1, miloš mitić1, branka milošević1, marin nedelchev2 1university of niš, faculty of electronic engineering, niš, serbia 2technical university of sofia, faculty of telecommunications, sofia, bulgaria abstract. the design of microstrip coupled resonator filters includes determination of the coupling coefficients between the filter resonator units. in this paper a novel modeling procedure exploiting prior knowledge neural approach is proposed as an efficient alternative to the standard electromagnetic (em) simulations and to the neural models based purely on the artificial neural networks (anns). it has similar accuracy as the em simulations and requires less training data and less time needed for the model development than the models based purely on anns. key words: artificial neural networks, coupled filters, design, microstrip 1. introduction microstrip coupled resonator filters act as bandpass filters and they are widely exploited in the modern microwave communication systems. planar filters are a good choice for realizing low passband loss and high rejection ratio in the stopband. they are manufactured easily to utilize printed circuit board (pcb) technology with a high accuracy and a relatively low price. planar filters’ responses do not vary when manufactured in series and their adjustment and tuning is straightforward. the variety of classical and crosscoupled topologies of microstrip filters can realize the chebyshev equiripple and quasielliptic response. the preferred resonators for practical realizations are half-wavelength resonators and their compact variantshairpin and square open loop resonators [1]. the square open loop resonators offer compact size at good quality factor inhering the frequency properties of the half wavelength resonator. as many microwave systems are relatively narrowband, the square open loop resonator can realize the narrow bandwidths with weak coupling coefficients at reasonable distance between them. received february 17, 2022 corresponding author: zlatica marinković university of niš, faculty of electronic engineering, 18106 niš, aleksandra medvedeva 14, serbia e-mail: zlatica.marinkovic@elfak.ni.ac.rs 146 z. marinković, m. mitić, b. milošević, m. nedelchev the cross-coupled filters with quasi-elliptic frequency response require clear identification of the sign of the coupling coefficient, which leads to clarification of the electrical, magnetic or mixed type of coupling especially between the non-adjacent resonators. the square open loop resonators solve this difficulty comparing to the half-wavelength resonators with the benefit of flexibility of coupling topologies. the filter synthesis process follows the classical approach through the calculation of the coupling matrix according to the chosen approximation. in the microwave systems, the most popular and implemented approximation is the chebyshev one [2]-[3]. in [2] the design process of the polynomials and the transversal coupling matrix is given. many authors offer matrix rotations to transform the canonical or transversal matrix to the exact matrix corresponding to the chosen topology [1]-[2]. an optimization method for direct calculation of the interresonator coupling coefficients is proposed in [4]. nevertheless, whatever method for synthesis is chosen, the distance between the resonators should be calculated precisely. in [1] it is proposed to utilize a full-wave em simulator, which is a rigorous approach, but suffers from a high time consumption and high calculation power needed. to overcome time consuming em simulations or complex optimization methods, new approaches based on application of artificial neural networks (anns) have been proposed to model the filter coupling properties on the filter resonator physical dimensions and/or the properties of the chosen dielectric material [5]-[6]. moreover, the ann based approach has been applied to perform inverse modeling of the filter. namely, the anns are used to determine the distance between the filter resonators for the given coupling properties [7]-[8] or resonator dimensions and the given coupling coefficient [5]-[6]. however, the developed models of the filter coupling properties shown in [5] are valid for only one considered dielectric material (i.e., for one specified value of the relative dielectric constant). in other words, it means that for each dielectric material it is necessary to develop a new neural model. to build a model which would be valid for different values of the relative dielectric constant, it would be necessary to acquire a bigger amount of the em simulated data, which would be time consuming and thus making the whole modeling procedure inefficient. in this paper we propose a novel approach in microstrip coupled resonator filter modeling, which is based on the prior knowledge based neural approach. namely, instead of exploiting the anns only, here the anns are combined with the empirical formulae, aimed for the approximate determination of the filter coupling coefficient. this approach provides a single model for all considered values of the relative dielectric constant. moreover, the model can be built with less data than the separate purely ann based models. the rest of the paper is structured as follows. the considered microstrip coupled resonator structure as well as the empirical expressions used for approximate determination of the filter coupling coefficients are described in section 2. section 3 contains a brief background of the prior knowledge neural approach. the novel prior knowledge neural model is proposed in section 4, whereas the obtained results and the discussion are given is section 5. section 6 contains conclusions. prior knowledge based neural modeling of microstrip coupled resonator filters 147 2. microstrip coupled resonator filters the square open loop resonator is a half wavelength long microstrip line with open ends (see fig.1a). the form of the resonator is symmetrical and the electromagnetic field distribution along it is predictable due to the symmetry. the open ends are supposed to be shortened, because of the fringe capacitance [9]-[10]. (a) (b) fig. 1 (a) the topology of microstrip square open loop resonator, (b) an example of coupled resonators the different orientations of the resonators on the top plane of the substrate form various kinds of coupling topologies. the coupling mechanism is achieved by the fringe fields, when the resonators are adjacent each other. the electrical filed is stronger than the magnetic near the open end of the resonator and the magnetic field is predominant at the center of the resonator. the strength of the electrical field and magnetic field decays rapidly with the distance from the open end and the center of the resonator respectively. the coupling structures in fig.1b perform mixed coupling. it is not possible to determine which field is dominant. the value of the coupling coefficient of the coupled resonators in fig1.b is much lower, because the currents are out-of-phase. this topology is applicable in narrow bandwidth filters. the considered microstrip resonator is of a square shape with the length a and the line width w, fabricated on the substrate having the height h and the relative dielectric constant r. the coupling coefficient (including mixed electric and magnetic coupling) k is precisely calculated in the em simulators, but the rough value of the coupling coefficient can be calculated using the following expressions [11]: '' me kkk += , (1) mm kk = 5.0' , (2) me kk = 6.0' (3) the coefficient of magnetic coupling km and the coefficient of electric coupling ke are calculated as: )exp()exp()exp( 16 eeeee dbafk −−−=  , (4) )exp()exp()exp( 16 mmmmm dbafk −−−=  , (5) 148 z. marinković, m. mitić, b. milošević, m. nedelchev where: h w a rre ++−= 11.001571.02259.0  , (6) pe r e h s b                   + += 2 1 ln226.00678.1  , (7) 4 03146.00886.1       += h w pe , (8) 15.1 06945.01608.0                −= h s h a de , (9)         −+−= h a h a fe 2443.04087.19605.0 , (10)               ++−= 3 08655.014142.006864.0 h w h w am , (11) pm m h s b       = 2.1 , (12) h w pm 1751.08885.0 −= , (13)                +−= h s h a h a dm 1417.08242.0154.1 , (14) h a h a fm −+−= 1557.00051.15014.0 . (15) 3. prior knowledge neural modeling approach owing to their excellent fitting capabilities artificial neural networks have found many applications in the field of rf and microwaves [12]-[19]. most of the applications have been based on the black-box modeling approach, which means that one or more anns are used to extract the relationship between the sets of the input and the output parameters (see fig. 2a). however, in order to make the modeling procedure more efficient, less time consuming and more accurate, without increasing the number of training data, the prior knowledge input (pki) neural approach can be applied (see fig. 2b) [12]. namely, in the pki approach, beside the original n input parameters, there are additional inputs of the ann. they represent the prior knowledge, meaning that they are correlated in some extent with the output parameters. in general, the number of prior knowledge input parameters (l) can be equal, but not necessary, to the number of the output parameters (m). the prior knowledge can be, for instance, the values of the outputs which are obtained by an approximate or simplified method. prior knowledge based neural modeling of microstrip coupled resonator filters 149 (a) (b) fig. 2 (a) black-box neural modeling approach, (b) prior knowledge input neural modeling approach the anns used in this work are the multilayer perceptron networks, having one input, one output and one or two hidden layers [12]. the transfer function of the input layer neurons is a unitary transfer function. the hidden layer neurons have sigmoid transfer functions, whereas the output layer neurons have linear transfer function. the levenbergmarquardt algorithm is used for the ann training. the pki approach requires that for each data sample used for the ann training, as well as later for testing and employing the developed model, it is necessary to have the values of the prior knowledge parameters. the average test error (ate), the worst case error (wce) and the product-pearson correlation coefficient (r) have been used as the metrics for comparing the models [11]. if the error of the ann response for the i–th input combination (i-th sample), ki compared to the corresponding target value, kti, relative to the dynamic range of the target values in the test set (kt max − kt min) is calculated as minmax tt ti i kk kk − − = . (16) the ate, wce and r are defined as follows: 1 1 | | n i i ate n  = =  , (17) 1 max | | n i i wce  = = , (18) 1 2 2 1 1 (| | | |)(| | | |) (| | | |) (| | | |) n i i i n n i ti t i i k k k k r k k k k = = = − − =     − −           , (19) 150 z. marinković, m. mitić, b. milošević, m. nedelchev where n is the number of the samples in the training set, and k and tk mean values of the ann response and the target values, respectively:  = = n i ik n k 1 1 and  = = n i tit k n k 1 1 . (20) 4. proposed model in the proposed model, an ann (fig. 3) is trained to predict the coupling coefficient for the given resonator dimensions a, s, w, the substrate height h and the relative dielectric constant r. besides these original input parameters, the ann has an additional input representing the prior knowledge, which is the approximate value of the coupling coefficient, here marked as kapprox ̧which is calculated by eqs. (1)-(15) given in section 2. the training and test sets consist of data samples, where one sample contains one combination of the values of the original input parameters, the calculated kapprox for the given input combination and the corresponding target value of the coupling coefficient k obtained by precise simulations in the full-wave em simulator. fig. 3 proposed pki neural model of microstrip coupled resonator coupling coefficient 5. results and discussion the proposed approach has been applied to model the microstrip coupled resonator coupling coefficient by exploiting the same data used in [6] for developing the black-box neural models aimed to predict the coupling coefficient for the given resonator dimensions and the properties of the substrate, k = (a, w, s, h), for the constant value of r. in table 1 the considered ranges of the input dimensions as well as the considered values of r are given. the training set has consisted of 2089 samples covering all four r values, whereas the validation test set has consisted of 40 samples not used in the training set. several anns with different number of hidden neurons were trained and the best model has been obtained with the ann having two hidden layers, each containing 17 neurons. the ate, wce and r values for the training set and the test set are given in table 2. the corresponding scatter plots prior knowledge based neural modeling of microstrip coupled resonator filters 151 showing the correlation of the predicted and target values for the training and test sets are given in fig. 4. table 1 considered ranges/values of the input parameters parameter range/values a (5 20) mm w (0.1 – 4) mm s (0.1 – 3.5) mm h (0.254 1.575) mm r 2.33, 4.4, 6.15, 10.2 table 2 test statistics for the training and the test sets set ate[%] wce[%] r trainig set 0.5 2 0.99967 test set 0.24 2.55 0.99981 table 3 comparison of the predicted and target values for ten chosen test samples k target k – ann model ae re[%] 0.096523 0.097757 0.001234 1.28 0.082074 0.082802 0.000728 0.89 0.066264 0.065804 0.000460 0.69 0.068744 0.066463 0.002280 3.32 0.073213 0.074809 0.001596 2.18 0.066295 0.065904 0.000390 0.59 0.074939 0.075631 0.000692 0.92 0.070582 0.070506 0.000075 0.10 0.058675 0.059139 0.000464 0.79 0.047486 0.047668 0.000183 0.38 (a) (b) fig. 4 correlation of the ann generated coupling coefficient and the reference target values (a) training set, (b) test set 152 z. marinković, m. mitić, b. milošević, m. nedelchev small errors in predicting both training and test values, as well as a good correlation, show that the proposed model not only learnt well the training data but has a good generalization accuracy on the test set not seen by the ann during the training phase. as an additional illustration, in table 3, for ten randomly selected test samples, the target and predicted values are reported together with the corresponding absolute errors (ae the absolute difference of the predicted and target values) and the relative errors (re the ae devided by the target value and expressed in percent). the rest of the test samples shown the similar errors. the relative errors are mostly below 2%, which can be considered as a good predicting accuracy. this model includes the dependence of the coupling coefficient on the relative dielectric constant, which was not possible to achieve with a simple black-box model by using the available data, i.e. without increasing the training set. to investigate how much the training set can be downsized in order to keep the same level of accuracy of the proposed model additional analysis have been performed. with this aim, the training set has been reduced but removing certain data samples, taking care that all considered areas of the input space were properly represented. (a) (b) fig. 5 correlation of the ann generated coupling coefficient and the reference target test values for the models trained with the (a) training set of 873 samples, (b) training set of 692 samples the proposed model has been developed for each reduced size training set ensuring the same level of training accuracy as in the initial case. the models have been further tested on the same test set (consisting of 40 samples) used for testing the model developed by using the full training set. the process of downsizing the training set has been stopped when the accuracy in predicting the test values started to get worse. in total, the test has been performed with four data sets consisting of 1230, 1036, 873 and 692 data samples. the test statistics is shown in table 4. prior knowledge based neural modeling of microstrip coupled resonator filters 153 table 4 test statistics for the test set obtained by the models trained with the reduced size training sets training set ate[%] wce[%] r reduced – 1230 samples 0.93 5.48 0.998672 reduced – 1036 samples 1.01 4.20 0.998495 reduced – 873 samples 1.05 3.90 0.998728 reduced – 692 samples 6.25 26.47 0.952975 it can be seen that the accuracy of the first three models is very similar. however, for the last data set, although the model was well trained, the correlation with the target test values has significantly decreased, which is confirmed by the higher errors. this can be clearly seen from fig. 5, where the scatter plots of the predicted data versus the target data for the last two data sets, containing 873 and 692 samples, show much higher discrepancies between the predicted and the target values of the coupling coefficient. it can be concluded that the number of training data can be more than halved comparing to the considered initial training set. this further means that the proposed approach can be exploited to develop the model for determining the coupling coefficient a much smaller number of the training data than the pure black-box model. 6. conclusion in this paper a novel modeling procedure exploiting prior knowledge neural approach is proposed for accurate determination of the coupling coefficient of a microstrip coupled resonator. unlike the black-box neural approach, which assumes that an ann is exploited to model the coupling coefficient dependence of the filter geometry and substrate properties, in the proposed model, an additional input of the ann is a value of the coupling coefficient obtained by mathematical expressions for approximate calculation of the coupling coefficient, representing the prior knowledge for the ann. by introducing the prior knowledge, the number of needed samples in the training data is reduced, that mean that less time is needed to acquire the training data by the time consuming em simulations, making the whole process of the model development more efficient and faster. comparing to the black-box model, the proposed model needs significantly less training data to develop the model with the desired accuracy. moreover, it gives a good accuracy in the cases where the black-box approach would need much more data to be exploited. in the considered case, with the available training data, the model includes dependence on the relative dielectric constant, which was not possible to achieve with a pure ann model. the model provides values of the coupling coefficient which are very close to the target values obtained by the em simulations. as the ann can be described by a set of mathematical expressions based on the basic mathematical operations and exponential function, the ann response can be calculated in a very short time. consequently, the ann accompanied with can the expressions representing prior knowledge be used for instant prediction of the coupling coefficient. in other words, the proposed model can be successfully used as a fast and accurate replacement of the em simulation for the coupling coefficient determination. looking from the side of the expressions used as the prior knowledge, which are used for approximate determination of the correlation coefficient, the ann can be seen as an addition to these expressions improving their accuracy. 154 z. marinković, m. mitić, b. milošević, m. nedelchev acknowledgement: the presented research has been supported by the ministry for education, science and technological development of serbia and by the ministry of education, republic bulgaria and faculty of telecommunications under contract number дн07/19/15.12.2016 "methods of estimation and optimization of the electromagnetic radiation in urban areas". references [1] j. hong and m. j. lancaster, microstrip filters for rf/microwave applications, john wiley & sons, 2001. [2] r. j. cameron, c. m. kudsia and r. m. mansour, microwave filters for communication systems: fundamentals, design, and applications, second edition, john wiley & sons, 2018. [3] r. j. cameron, "advanced coupling matrix synthesis techniques for microwave filters", ieee trans. microw. theory tech., vol. 51, no. 1, pp. 1–10, jan. 2003. [4] s. amari, "synthesis of cross-coupled resonator filters using an analytical gradient-based optimization technique", ieee trans. microw. theory tech., vol. 48, no. 9, pp. 1559–1564, sept. 2000. [5] m. mitić, m. nedelchev, a. kolev and z. marinković, "ann based design of microstrip square open loop resonator filters", in proceedings of the joint international conference on digital arts, media and technology with ecti northern section conference on electrical, electronics, computer and telecommunications engineering , pattaya, thailand, 11–14 march 2020, pp. 158–161. [6] m. nedelchev, m. mitić, a. kolev and z. marinković, "modeling and design of microstrip coupled resonator filters based on anns", in proceedings of the 43rd international conference on telecommunications and signal processing, milan, italy, july 7-9, 2020, pp. 470–473. [7] m. nedelchev, z. marinković and a. kolev, "ann based design of planar filters using square open loop dgs resonators", in proceedings of the 53rd international scientific conference on information, communication and energy systems and technologies icest 2018, sozopol, bulgaria, june 28-30, 2018, pp. 59–92. [8] m. nedelchev, z. marinković and a. kolev, "ann modelling of planar filters using square open loop dgs resonators", in proceedings of the 4th eai international conference on future access enablers of ubiquitous and intelligent infrastructures (fabulous 2019), sofia, bulgaria, march 28-29, 2019, pp. 363–371. [9] j.-s. hong and m. j. lancaster, "transmission line filters with advanced filtering characteristics", in proceedings of the mtt-s international microwave symposium digest, vol. i, boston, ma, usa, june 2000, pp. 319–322. [10] j.-s. hong and m. j. lancaster. "theory and experiment of novel microstrip slow-wave open-loop resonator filters", ieee trans. microw. theory tech., vol. 45, no. 12, pp. 2358–2365, dec. 1997. [11] j.-s. hong and m. j. lancaster, "couplings of microstrip square open-loop resonators for cross-coupled planar microwave filters", ieee trans. microw. theory tech., vol. 44, no. 11, pp. 2099–2109, nov. 1996. [12] q. j. zhang and k. c. gupta, neural networks for rf and microwave design, artech house, 2000. [13] h. kabir, l. zhang, m. yu, p. aaen, j. wood and q. j. zhang "smart modelling of microwave devices", ieee microw. mag., vol. 11, no. 3, pp. 105–108, may 2010. [14] z. marinković, g. crupi, a. caddemi, v. marković and d. m.m.‐p. schreurs, "a review on the artificial neural network applications for small‐signal modeling of microwave fets", int. j. numer. model el., e2668, may/june 2020. [15] z. stanković, n. dončov, "prediction of the em signal delay in the ionosphere using neural model", facta univ. ser.: elec. energ., vol. 32, no. 2, pp. 287–302, 2019. [16] t. ćirić, z. marinković, r. dhuri, o. pronić-rančić and v. marković, "hybrid neural lumped element approach in inverse modeling of rf mems switches", facta univ. ser.: elec. energ., vol. 33, no. 1, pp. 27–36, march 2020. [17] j. jin, f. feng, j. n. zhang, s. x. yan, w. c. na and q. j. zhang, "a novel deep neural network topology for parametric modeling of passive microwave components", ieee access, vol. 8, pp. 82273– 82285, may 2020. [18] q.-j. zhang, e. gad, b. nouri, w. na and m. nakhla, "simulation and automated modeling of microwave circuits: state-of-the-art and emerging trends," ieee j. microwavs, vol. 1, no. 1, pp. 494– 507, jan. 2021. [19] j. n. zhang, f. feng, j. jin, w. zhang, z. zhao and q.-j. zhang, "adaptively weighted yield-driven em optimization incorporating neuro-transfer function surrogate with applications to microwave filters", ieee trans. microw. theory tech., vol. 69, no. 1, pp. 518–528, jan. 2021. instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 235 244 doi: 10.2298/fuee1702235g performance analysis of dual-branch selection diversity system using novel mathematical approach  aleksandra golubović 1 , nikola sekulović 2 , mihajlo stefanović 1 , dejan milić 1 1 university of niš, faculty of electronic engineering, niš, republic of serbia 2 college of applied technical sciences, niš, republic of serbia abstract. in this paper, novel mathematical approach for evaluation of probability density function (pdf) of instantaneous signal-to-interference ratio (sir) at the receiver output in interference-limited environment is proposed. dual-branch selection combining (sc) receiver operating over correlated weibull fading channels applying sir algorithm is considered. analytical expression for joint pdf of desired signal and interference at the receiver output is derived and used for evaluation of pdf of instantaneous sir. the expression for pdf of sir is used for system performance analysis via outage probability, average bit error probability (abep) and average output sir as system performance measures. numerical results are graphically presented showing the effects of fading severity, average sir at the input and level of correlation on the diversity receiver performance. in addition, results obtained for the pdf of instantaneous sir in this paper, are compared to the results when the pdf of instantaneous sir is directly calculated. key words: cochannel interference, correlated channels, decision algorithms, selection diversity, weibull fading channels. 1. introduction the main performance limitations in wireless communications systems are fading and cochannel interference (cci). fading emerges due to multipath propagation while cci develops as a side effect of frequency reuse. in order to make as accurate system design as possible, depending on propagation environment, several models are used to describe the statistical behaviour of the multipath fading envelopes. the most frequently used in literature are rayleigh, rice, nakagami-m and weibull. this paper focuses on weibull distribution since it is simple and flexible yet not exploited as much as the other models. it represents an received july 8, 2016; received in revised form october 16, 2016 corresponding author: aleksandra golubović faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: aleksandra321@gmail.com) 236 a. golubović, n. sekulovic, m. stefanović, d. milić excellent fit to experimental fading channel measurements for indoor [1], [2] and outdoor [3]-[5] environments. wireless communication system performance can be improved at relatively low cost by diversity techniques. basic idea behind diversity systems is simultaneous reception of the same radio signal over two or more paths in order to increase the overall signal-to-noise ratio (snr) [6]. the diversity paths can be separated by space, frequency or time and in all cases some redundancy in time, frequency and/or spatial domain is required [7]. compared with other diversity techniques, space diversity is powerand bandwidth-efficient that makes it the most commonly used diversity technique [8]. if the best of the received signals is selected or if they are properly combined, the outage time can be substantially reduced [9]. depending on the communication system complexity restrictions and the amount of channel state information (csi) available at the receiver, space diversity has several principal types of combining techniques. combining techniques like maximal ratio combining (mrc) and equal-gain combining (egc) require some amount of the channel state information of received signal and separate receiver chain for each branch of the diversity system that results in system complexity increase. on the other hand, selection combining (sc) receiver processes only one of the diversity branches at the time and it is much simpler and cheaper for practical realization [6]. in interference-limited environment, where the level of cci is sufficiently high compared to noise, sc receiver can employ one of the combining algorithms: the desired signal (ds) algorithm, the signal-to-interference ratio (sir) algorithm and the total signal (ts) algorithm [10]. sir algorithm is based on selecting the diversity branch that has the highest sir and it usually provides the best results in the case of interference-limited systems. l-branch egc and mrc receivers operating over non identical weibull fading channels have been considered in [11]. performance analysis of digital communications receivers over weibull fading channels that employ sir algorithm was thoroughly investigated in [12]-[14]. the performance of sc diversity system operating over correlated weibull fading channels that applies sir decision algorithm is studied in [12] for dual-branch system, in [13] for triple-branch system and in [14] for l-branch system. a system that uses ds algorithm, where both desired signal and interference are correlated and under weibull fading, is presented in [15] for dual-branch and [16] and [17] for triple branch system. this paper presents novel mathematical approach for deriving an expression for the probability density function (pdf) of instantaneous sir at the output of a selection combining diversity system with two correlated weibull fading channels that applies sir algorithm. the mathematical approach used in [12] for the same system, directly calculates pdf of instantaneous sir at the system output while this paper calculates joint pdf of desired signal and interference at the output first and then the result is used for calculation of pdf of instantaneous sir at the output. finally, the results obtained in this paper are compared to the results obtained in [12] and [15]. 2. system and channel model we consider a sc diversity system with two branches in interference-limited weibull fading environment. in practice, diversity systems are applied in small-size terminals and complete independence between branches can not be achieved resulting in diversity gain performance analysis of dual-branch selection diversity system using novel mathematical approach 237 degradation. in such case, desired signal envelopes (x1, x2) and cci envelopes (y1, y2) experience correlative weibull fading with joint pdfs [18, eq. (11)] 1 2 1 2 1 2 1 2 1 2 1 21 2 / 2 / 2 1 1 1 21 2 1 2 1 2 1 2 0 d d d dd d 2 1 , exp , (1 ) ω ω 1 ω ω(1 ( ) ) ω ω x x x x x x x x p x x i                                (1) 1 2 1 2 1 2 1 2 1 2 1 21 2 / 2 / 2 1 1 1 21 2 1 2 1 2 1 2 0 c c c cc c 2 1 , exp , (1 ) ω ω 1 ω ω(1 ( ) ) ω ω y y y y y y y y p y y i                                (2) where ρ represents branch correlation coefficient (0≤ρ≤1), β is weibull fading parameter which expresses fading severity (β>0). as the value of weibull fading parameter increases, fading severity decreases. ω i di ix   and ω i ci iy   are the average powers of desired and interference signal at i-th branch (i=1,2), respectively. in() is the modified bessel function of the first kind and n-th order [19, eq. (8.445)]. instantaneous values of sir on the first and second diversity branch are defined as z1=x1/y1 and z2=x2/y2, respectively. the joint pdf of these random variables is 1 2 1 2 1 21 2 1 2 1 1 2 2 1 2 1 2 0 0 ( , ) ( , ) ( , ) .z z x x y yp z z y y p z y z y p y y dy dy      (3) sc receiver based on sir algorithm chooses and outputs the branch with larger sir, i.e. z = max {z1, z2}. applying the concepts of probability, the pdf of instantaneous sir at the output of sc combiner can be obtained as 1 2 1 22 2 1 1 0 0 ( ) ( , ) ( , ) . z z z z z z zp z p z z dz p z z dz   (4) the approach described by (3) and (4) is used in previously published papers which study sc receivers. in this work, we propose mathematical approach based on calculation of the joint pdf of desired and interference signal envelopes. the joint pdf of desired and interference signal envelopes on input diversity branches can be easily expressed as 1 1 2 2 1 2 1 21 1 2 2 1 2 1 2( , , , , ,) ( ( ).)x y x y x x y yp x y x y p x x p y y (5) when a dual-branch sc diversity system uses sir algorithm, one of two conditions have to be fulfilled: 1. 1 2 1 1 2 2 1 2 , x x y x x y y y x y y x       2. 2 1 2 2 1 1 2 1 , . x x y x x y y y x y y x       in that case, the joint pdf of desired signal and interference envelopes at the output of dual-branch sc receiver based on sir algorithm can be obtained as 238 a. golubović, n. sekulovic, m. stefanović, d. milić 1 1 2 2 1 1 2 2 2 1 2 2 2 2 1 1 1 1 0 0 , ( , , , ) ( , , , )( ) ,xy x y x y x y x y y y x x x x p x y p x y x y dy dx p x y x y dy dx          (6) which by substituting (5) and after some mathematical manipulations yields 1 1 1 1 1 2 1 2 1 2 1 2 2 2 2 2 2 1 d c 1 1 1 1 2 +1 1 , 0 d d c c 2 c d d ( 1) ( ) ( 1 ( ) 2 1 ) 1 , exp 1 ω ω (1 ) ! ! 1 (ω ω ) (ω ω ) γ( 2) 1 1 ω ω ω 1, 2; ( ) ( ) ( ; ) 2 ω xy j j i j i j i j i ii j j j x y p x y x y i j i i j y x f i j i                                                          2 2 2 2 2 2 1 2 1 2 1 2 1 2 1 1 1 1 c 2 2 d c 1 1 1 1 ( 1) 1 2 ( ) ( 1 1 , 0 d d ( d ) ) c c c 1 1 exp   1 ω ω (1 ) ! ! 1 (ω ω ) (ω ω ) γ( 2) 1 1 ω ) ω ( ( ) n m n nn m m n m n m n y x x y x y m n m m n y x                                                                    1 1 1 2 1 1 d 2 c ω 1, 2; 2; 1 , ω m n y m n m x f                      (7) where 2f1(,;;z) represents gaussian hypergeometric function [19, eq. (9.100)] and () represents gamma function [19, eq. (8.310.1)]. to the best of the authors’ knowledge, the above presented expression for the joint pdf of desired and interference signal envelopes at the sir based sc receiver output is novel in the open technical literature. the pdf of instantaneous sir at the sc output can be calculated using following equation 0 ( ) ( , ) .z xyp z yp zy y dy    (8) by substituting (7) in (8) and after integration, final expression for the pdf of instantaneous sir at the receiver output is derived as performance analysis of dual-branch selection diversity system using novel mathematical approach 239 1 2 1 2 1 2 21 1 1 2 2 2 2 2 ( 1 (1 )) 1 2 1 2 1 1 , 0 d d 2 2 d c c 2 d 1 d 1 c 1 ( ! !) 1 ω ω (ω ω ) γ ( 2) 1 1 1 1 ω ω ω ω ω 1 1, 2; 2 ( ) ( ) ; 1 ( )( ω ) i jj i iz j i j c c i j z i j i i j z z f i j i z p z                                                             2 1 1 2 1 2 12 2 2 1 1 1 1 1 ( 1) 1( ) 1 2 2 2 1 1 , 0 d d 2 2 d c d 2 c 1 d 1 c 1 ( ! !) 1 ω ω (ω ω ) γ ( 2) 1 1 1 1 ω ω ω ω ω 1 1, 2; 2; 1 ( ) ( , ω )( ) m nn m m n m n c c m n z m n m m n z z f m n m z                                                         (9) the pdf of instantaneous sir at the output of the same system obtained using mathematical approach described by (3) and (4) is presented in [12] by (11). table 1 comparison of number of terms of (9) and (11) in [12] to achieve accuracy at the fourth significant digit (β1=2, β2=3, s1= s2=10db) z=5 z=25 (9) in this paper (11) in [12] (9) in this paper (11) in [12] ρ=0.2 4 6 5 6 ρ=0.5 12 13 13 15 ρ=0.8 34 34 34 41 considering that convergence represents significant problem in infinite-series expressions, table 1 summarizes the number of terms that need to be summed in the expressions for the pdf of instantaneous sir at the sc output obtained in this paper and paper [12] to achieve accuracy at the 4th significant digit after the truncation of the infinite series. instead of individual signal and interference powers, as it was presented in equation (9), the table considers their ratio at the input of i-th branch of selection combiner si=ωdi/ωci, i=1,2. the results show that the expression obtained in this paper converges more rapidly than the expression (11) in [12], making it more manageable for system analysis. 240 a. golubović, n. sekulovic, m. stefanović, d. milić 3. system performance analysis the performance of dual-branch sc system operating over correlated weibull fading channels is analysed using analytically obtained expression for the pdf of instantaneous sir at the output. performance indicators that are considered in this section are outage probability, average bit error probability (abep) and average output sir. the influence of fading severity, correlation coefficient and average powers is studied. moreover, numerical results are compared to numerical results in [12] to verify mathematical approach proposed in this work. 3.1. outage probability being a basic system performance measure in interference-limited environment, outage probability, pout, can be defined as the probability that the output sir drops below a specified threshold zth out 0 ( ) . thz zp p z dz  (10) fig. 1 depicts outage probability of balanced (s1=s2=s) dual-branch sc receiver as a function of outage threshold for different system parameters. the results obtained in this paper match perfectly the results obtained in [12]. the outage probability decreases for lower values of outage threshold and higher weibull fading parameters. for higher values of outage threshold, when desired signal is dominant, the system performance deteriorates as weibull fading parameter increases. when fixed values of weibull fading parameters are observed, it is obvious that for higher correlation coefficient system performance deteriorates. -15 -10 -5 0 5 10 15 20 10 -5 10 -4 10 -3 10 -2 10 -1 10 0   =2.5             results obtained using [12] for corresponding parameters o u ta g e p ro b a b ili ty outage threshold [db] s=6db               fig. 1 outage probability of dual-branch sc system comparison of the results for outage probability when ds algorithm [15] and sir algorithm are used for different fading severity is illustrated in fig. 2. the branches of the performance analysis of dual-branch selection diversity system using novel mathematical approach 241 receiver are correlated and balanced. it can be seen that system with sir algorithm shows slightly better performance in terms of outage probability compared to ds algorithm. -15 -10 -5 0 5 10 15 20 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 =1 =4 sir algorithm ds algorithm o u ta g e p ro b a b ili ty outage threshold [db] =0.6 s 1 =s 2 =2db fig. 2 result comparison of outage probability for sir and ds decision algorithms 3.2. average bit error probability abep represents one of the important first order performance measures. it is often used for system performance evaluation because it is the most revealing of the nature of the system behaviour. abep is calculated using conditional bit error probability (bep), which is a function of the modulation/detection scheme employed by the system. in this paper, two modulations are considered, bdpsk and bfsk. for these two cases, the conditional bep for a given sir is 21 2 ( ) ,gz ep ez  (11) where g represents modulation constant and the values are, for bdpsk g=1 and bfsk g=1/2. abep at the sc output can be evaluated directly by averaging the conditional bep over the pdf of z 0 ( ) .( )e e zzp p p z dz    (12) fig. 3 illustrates abep of balanced dual-branch sc receiver for bfsk and bdpsk signalling for different correlation coefficient. the results obtained in [12] perfectly match the results obtained in this paper. the system performance is better for lower values of correlation coefficient which means that the system performance is better as the distance between the antennas increases. for the case when correlation is too high, it is possible for deep fades in the branches to occur simultaneously resulting in low improvement degree of considered space diversity. it is obvious from the figure that system with bdpsk signalling shows better performance than system with bfsk signalling which is in compliance with conclusion presented in [6]. 242 a. golubović, n. sekulovic, m. stefanović, d. milić 0 5 10 15 20 25 30 10 -3 10 -2 10 -1 10 0      a b e p s [db] bfsk   bdpsk   results obtained using [12] for corresponding parameters fig. 3 the influence of correlation coefficient on abep of dual-branch sc system 0 5 10 15 20 25 30 10 -3 10 -2 10 -1 10 0 results obtained using [12] for corresponding parameters       a b e p s [db] bfsk   bdpsk   fig. 4 the influence of fading severity on abep of dual-branch sc system in fig. 4, abep of balanced dual-branch sc receiver for bfsk and bdpsk signalling for different fading intensity is presented. it is obvious that system performance is better in the environment with lower fading parameter. it is interesting to note that for lower values of s, bfsk signalling with lower value of β, shows worse system performance than bdpsk signalling with higher value of β while for the case when higher values of s are observed, the situation is vice versa. it can be explained by the fact that in the considered scenario desired signal and cci, which is inferior for higher values of s, are exposed to the same fading severity. performance analysis of dual-branch selection diversity system using novel mathematical approach 243 3.3. average output sir average output sir is one more useful parameter that is used in wireless communications in the case when cci is present. it can be calculated by 0 ( ) .sc zz zp z dz    (13) based on (9) and (13), fig. 5 is plotted. it shows that the results obtained using (9) match perfectly with the results obtained using mathematical approach presented in [12]. the figure shows that the average output sir degrades rapidly for higher values of correlation coefficient. it is also obvious that the system performance is better for higher values of s, which is more significant in the case of lower values of fading parameters. 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 results obtained using [12] for corresponding parameters a v e ra g e o u tp u t s ir    = 2 =2.5; s=3db   = 2 =2.5; s=6db   = 2 =4.7; s=3db   = 2 =4.7; s=6db fig. 5 average output sir as a function of correlation coefficient 4. conclusion this paper studies the performance of dual-branch sc receiver operating over correlated weibull fading channels in the presence of weibull distributed cci for the case when sir algorithm is applied. the pdf of instantaneous sir at the system output was derived using mathematical approach based on calculation of the joint pdf of desired signal and interference signal envelopes at the output. using the pdf of instantaneous sir at the system output, outage probability, abep and average output sir were evaluated as efficient system performance measures. numerical results were graphically presented describing the influence of correlation coefficient, fading severity and average sir at the input on overall system performance. in addition, obtained results were compared to the results in [12] which proved the perfect match, as it was expected. it was shown that the expression for pdf of instantaneous sir obtained in this paper converges faster than the expression in [12] therefore the novel expression derived in this paper can be used more efficiently. moreover, the joint pdf of desired signal and interference signal envelopes at the system 244 a. golubović, n. sekulovic, m. stefanović, d. milić output can be used to calculate other important distributions. for example, the pdf of sum of desired signal and interference signal envelopes can be obtained and applied in performance analysis of system with micro and macrodiversity when macrodiversity combiner uses total power signal algorithm. motivated by these facts, the subject of our future work will be generalization of the mathematical approach for arbitrary order of diversity and macrodiversity system based on ts algorithm. references [1] f. babich, g. lombardi, ―statistical analysis and characterization of the indoor propagation channel,‖ ieee trans. commun., vol. 48, pp. 455-464, mar. 2000. [2] h. hashemi, ―the indoor radio propagation channel,‖ proc. ieee, vol. 81, pp. 943–968, july 1993. [3] g. tzeremes, c. g. christodoulou, ―use of weibull distribution for describing outdoor multipath fading‖ in proc. of the ieee anthennas and propagation society international symposium 1, 2002, pp. 232-235. [4] n. s. adawi, et al., ―coverage prediction for mobile radio systems operating in the 800/900 mhz frequency range,‖ ieee trans. veh. technol., vol. 37, no. 1, pp. 3–72, feb. 1988. [5] n. h. shepherd, ―radio wave loss deviation and shadow loss at 900 mhz,‖ ieee trans. veh. technol., vol. 26, pp. 309–313, nov. 1977. [6] m. k. simon, m. s. alouini, digital communications over fading channels, john wiley & sons, inc. 2000. [7] y. li, x. g. xia, g. wang, ―simple iterative methods to exploit the signal-space diversity,‖ ieee trans. commun., vol. 53, no. 1, pp.32-38, jan. 2005. [8] j. boutros, e. viterbo, ―signal space diversity: a power and bandwidth-efficient diversity technique for rayleigh fading channel,‖ ieee trans. inf. theory, vol. 44, pp. 1453-1467, july 1998. [9] s. h. lin, t. c. lee, m. f. gardina, ‖diversity protections for digital radio-summary of ten-year experiments and studies,‖ ieee commun. magazine, vol. 26, no. 2, feb. 1988, pp. 51-64. [10] w. jakes, microwave mobile communications, john wiley & sons, inc. 1974. [11] g. k. karagiannidis, d. a. zogas, n. c. sagias, s. a. kotsopoulos, g. s. tombras, ‖equal-gain and maximalratio combining over nonidentical weibull fading channels,‖ ieee trans. wireless commun., vol. 4, no. 3, pp. 841–846, may 2005. [12] m. c. stefanovic, d. m. milovic, a. m. mitic, m. m. jakovljevic, ―performance analysis of system with selection combining over correlated weibull fading channels in the presence of cochannel interference,‖ int. j. aeü, vol. 62, no. 9, oct. 2008, pp. 695—700. [13] p. spalevic, n. sekulovic, z. georgios, e. mekic, ―performance analysis of sir-based triple selection diversity over correlated weibull fading cchannels,‖ facta universitatis, series electronics and energetics vol. 23, no. 1, apr. 2010, pp. 89—98. [14] m. stefanovic, d. draca, a. panajotovic, n. sekulovic, ―performance analysis of system with l-branch selection combining over correlated weibull fading channels in the presence of cochannel interference,‖ int. j. commun. systems, vol. 23, no. 2, pp. 139—150, feb. 2010. [15] a. golubovic, n. sekulovic, m. stefanovic, d. milic, i. temelkovski, ―performance analysis of dualbranch selection diversity receiver that uses desired signal algorithm in correlated weibull fading environment‖, tehnicki vjesnik-technical gazette, vol. 21 no. 5, pp. 953-957, 2014. [16] n. sekulovic, m. stefanovic, a. golubovic, i. temelkovski, b. trenkic, m. peric, s. milosavljevic ―performance analysis of triple-branch selection diversity based on desired signal algorithm over correlated weibull fading channels,‖ ttem technics technologies education management, vol. 7, no. 3, pp. 10131019, 2012. [17] n. sekulović, a. golubović, ĉ. stefanović, m. stefanović, ―average output signal-to-interference ratio of system with triple-branch selection combining based on desired signal algorithm over correlated weibull fading channels,‖ facta universitatis series automatic control and robotics, vol. 11, no 1, pp. 37-43, 2012. [18] n. c. sagias, g. k. karagiannidis, ―gaussian class multivariate weibull distributions: theory and applications in fading channels,‖ ieee trans. inf. theory, vol. 51, no.10, pp. 3608—3619, oct. 2005. [19] i. gradshteyn, i. ryzhik, table of integrals, series and products, 7ed, ny: academic press, 2007. http://www.kobson.nb.rs/nauka_u_srbiji.132.html?autor=golubovic%20aleksandra instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 383 391 doi: 10.2298/fuee1503383r optimization and advantages of the bimode insulated gate transistor  munaf rahimo, liutauras storasta abb switzerland ltd., semiconductors abstract. the bi-mode insulated gate transistor bigt is a single chip reverse conducting igbt concept, which is foreseen to replace the standard igbt / diode two chip approach in many high power semiconductor applications. therefore, it is important to understand in detail the design challenges and performance trade-offs faced when optimizing the bigt for different application requirements. in this paper, we present the main conflicting design trade-offs for achieving the overall electrical and thermal performance targets. we will demonstrate experimentally how on one hand, the bigt provides improved design features which overcome the restrictions of the current state of the art igbt/diode concepts, while on the other hand, a new set of tailoring parameters arise for an optimum bigt behavior. key words: power semiconductors, igbt, diode, bigt 1. introduction in modern power electronics applications employing igbt modules, the diode presents a major restriction with regard to losses reductions and maximum surge current capability. both issues are a result of the typically limited diode area available in a given package footprint design. in particular, these limits were further restricted after the introduction of modern low-loss igbt designs. therefore, the simple approach of increasing the diode area is not a preferred solution and in any case remains constrained by the package standard footprint designs. nevertheless, the clear demand for increased power densities of igbt and diode components has led to the focus on an igbt and diode integration solution, or what has been normally referred to as the reverse conducting rc-igbt. the key rc-igbt feature has been the introduction of the anode shorts for the diode integration [1][2]. however, a number of process and design constraints related to the integrated diode structure have hindered the development of rc-igbts for hard switching applications and recent development efforts were aimed at tackling these issues. hence, resulting in an advanced rc-igbt concept referred to as the bi-mode insulated gate transistor (bigt) [3]. received march 2, 2015 corresponding author: munaf rahimo abb switzerland ltd, semiconductors, fabrikstrasse 3 5600 switzerland (e-mail: munaf.rahimo@ch.abb.com) 384 m. rahimo, l. storasta in addition to the modern miniaturized igbt mos cell designs, the second main design enabler for the bigt realization is the soft-punch-through (spt) buffer concept [4]. almost all of today`s igbt structures are based on the soft punch through or field stop lowly doped buffer concept combined with low injection efficiency p-type anodes for providing very low on-state and switching losses when compared to previous generations. however, this design approach has some limits for delivering optimum overall performance due to the difficulty to control the bipolar gain of the igbt. the bipolar gain has a critical dependency on the finely controlled design parameters of the buffer and anode especially when compared to typical non-punch-through npt devices. it was also clear that these design restrictions become even more challenging for igbts with higher voltage ratings [5]. the main requirements affected by the soft-punchthrough (spt) igbt structure are illustrated in fig. 1 and listed below: 1. reverse blocking leakage current which is critical for device stability during high temperature operation 2. short circuit withstand capability at low temperatures and high gate emitter voltages 3. turn-off softness under high inductance, low currents and temperatures 4. safe operating area under dynamic avalanche and switching-self-clamping-mode sscm 5. static and dynamic losses trade-off point selection due to (1-4) restrictions rbsoa short circuit soa leakage current adjusting the pnp bipolar transistor gain for optimum performance losses, softness fig. 1 the trade-offs for spt design in igbts. as mentioned previously, when compared to igbts the rc-igbt in principle also benefits greatly from the spt design, and more importantly, it has been shown that the above performance and associated design trade-offs are strongly minimized by the introduction of the anode shorts. thus, the anode shorts not only enable diode conduction but are also are fundamental for the functionality of the whole device concept [6]. however, conventionally for rc-igbts, the igbt/diode integration and the introduction of the anode shorts for high voltage and hard switching applications has also resulted in a number of performance drawbacks and a new set of trade-offs as summarized below:  snap-back in the igbt on-state i-v characteristics (the shorting effect)  igbt on-state versus diode recovery losses trade-off (the plasma shaping effect) optimization and advantages of the bimode insulated gate transistor 385  safe operating area soa (the charge uniformity effect)  igbt versus diode softness trade-off (the silicon design effect) in this paper, we will discuss the above mentioned topics and provide an overview of the required bigt optimum design features to obtain good overall electrical performance while targeting main stream hard switching power electronics applications. 2. the bigt device concept the development of the bigt was aimed at solving the above issues by following two integration steps. the first integration follows the standard approach for an rc-igbt. a cross section is shown in fig. 2 combining both an igbt and diode in a single structure. at the collector side, alternating n+ doped areas are introduced into an igbt p+ anode layer, which then act as a cathode contact for the internal diode mode of operation. the area ratio between the igbt anode (p+ regions) and the diode cathode (n+ regions) determines which part of the collector area is available in igbt or diode modes, respectively. during the rc-igbt conduction in diode mode, the p+ regions are in-active and do not directly influence the diode conduction performance. however on the other hand, the n+ regions act as anode shorts in the igbt mode of operation, strongly influencing igbt conduction mode. fig. 2 first integration step: the reverse conducting rc igbt. one of the implications of anode shorting is the voltage snapback a referred to previously which is observed as a negative resistance region in the device igbt mode i-v characteristics. this effect will have a negative impact when devices are paralleled, especially at low temperature conditions. to resolve this issue, a second integration step was required. it has been shown that the initial snap-back can be controlled and eliminated by introducing wide p+ collector/anode regions into the device, also referred to as a pilotigbt. this approach resulted in the bigt concept which is in principle a hybrid structure consisting of an rc-igbt and a standard igbt in a single chip as shown in fig. 3. 386 m. rahimo, l. storasta fig. 3. second integration step: the bimode insulated gate transistor bigt. 3. the bigt design trade-off challenges 3.1. the bigt snapback effect despite the fact that the n-type shorting regions have contributed to many advantages as explained earlier, the major drawback is related to the snap-back effect in the forward iv characteristics. nevertheless, this effect has been minimized strongly with the bigt hybrid design with the introduction of the p+ collector/anode pilot region. the main target of this combination is to eliminate snap-back behavior at low temperatures in the bigt transistor on-state mode by ensuring that hole injection occurs at low voltages and currents from the p+ pilot region in the igbt section of the bigt. nevertheless, further optimization was still required with relation to the shorting layout design. a radial shorting layout in relation to the pilot region [7] has shown optimum on-state curves with a more smooth increase in the current when compared to a stripe shorting design in parallel to the p+ pilot region as shown in fig. 4 for a 4.5kv/50a bigt device. 0 20 40 60 80 100 0 1 2 3 4 5 6 on-state voltage (v) c o ll e c to r c u rr e n t (a ) pilot igbt operation secondary snap-backssmooth transition pilot igbt pilot igbt fig. 4 reducing the snap-back with the bigt hybrid design and radial shorting layout. optimization and advantages of the bimode insulated gate transistor 387 3.2. igbt mode versus diode mode losses for the bigt losses optimization, the main challenge was to enable low diode mode recovery losses while not having a considerable effect on the transistor mode on-state losses. a three step approach is utilized to achieve this target. the first step is the fine control of the doping profiles of the emitter p-well cells and collector/anode short regions. as shown in fig. 2, the enhanced planar cell technology exhibits low injection levels and a compensation effect due to the enhancement n-layer. these two features provide the bigt with a fine pattern p-well profile for obtaining low injection efficiency for a better diode performance. the second optimization step employs a local p-well lifetime (lpl) control technique utilizing a selfaligned and well-defined particle implantation which further reduces the diode recovery without degrading the transistor losses trade-off curve and blocking characteristics. the final adjustment of the reverse recovery losses is achieved with a uniform local lifetime control employing proton irradiation. further reductions in diode recovery losses can be obtained by applying a mos gate control during diode-mode conduction and switching [6]. 3.3. the bigt charge uniformity the structured collector/anode of a bigt with p+ and n+ areas introduces non-uniformities in the lateral charge distribution which have been studied with the aid of device simulation. while the fine patterning of the rc-igbt region (see fig. 2) does not bring much changes to the overall charge distribution, the pilot-igbt region significantly modifies the bigt charge and current distribution compared to an igbt. during the igbt conduction mode, the p+ pilot acts as a large non-shorted region having very strong anode injection, therefore the electronhole plasma and the current density is the highest in the pilot region as shown in fig. 5 [8]. the junction temperature distribution is also affected by this and is highest in the region of the pilotigbt, which is placed in the middle of the device for this reason. conversely, the pilot region has the lowest carrier plasma density during diode conduction. during the igbt mode turn-off, the high plasma concentration in the pilot region triggers early dynamic avalanche at the mos cells located above the same region. the described charge inhomogeneity is mainly pronounced at lower temperatures and low device currents. at the critical soa conditions, the difference between the rc-igbt and pilot-igbt regions is reduced which results in a similar dynamic avalanche behavior as for the corresponding igbt. on-state turn-off rc-igbt bigt pilotigbt pilotigbt fig. 5 hole density during igbt on-state conduction and turn-off of a reverse-conducting igbt compared to the bigt, showing the effect of carrier plasma un-uniformity and the occurrence of dynamic avalanche. 388 m. rahimo, l. storasta 3.4. the bigt diode mode softness the diode softness challenge is mainly due to the fact that generally the diode silicon does not match the igbt silicon for obtaining soft recovery performance. thus, such conflicting requirements could result in diode mode snappy behavior in an integrated structure. to resolve this critical issue, the anode shorts have inherently a switching behavioral feature which provides the bigt with very soft turn-off characteristics as described in the following section. 4. the bigt trade-off advantages 4.1. reverse bias and leakage current the presence of the n-type shorts in the bigt has a large impact on lowering the leakage current. the n-type areas provide a direct path for electrons during reverse blocking conditions, therefore no or very little hole injection occurs. fig. 6 shows thermal stability comparisons at different temperatures for 6.5kv rated igbts and bigts with two anode designs. the bigt clearly demonstrate improved thermal stability at higher temperatures when compared to the igbt even with very high anode injection efficiencies [9]. the anode shorts remove the influence of the bipolar gain on the leakage current to a large extent. as a result, the leakage current is suppressed and the increment with the temperature is reduced. in addition, the anode strength does not influence the leakage current in the bigt in contrast to an igbt structure. however, it can still occur that holes are injected due to the lateral voltage drop when a high leakage current is flowing over large/wide p-doped anode areas, but this was not observed in practical designs even with a pilot igbt region occupying around 20% of the collector area. 0.01 0.1 1 10 75 100 125 150 175 temperature (ºc) l e a k a g e c u rr e n t (m a ) igbt igbt 2x anode bigt bigt 2x anode fig. 6 6.5kv bigt and igbt thermal stability curves. optimization and advantages of the bimode insulated gate transistor 389 2.2. igbt and diode mode turn-off softness as mentioned in the previous section, with regard to the bigt softness in diode as well as igbt turn-off modes, an inherent effect in the bigt similar to the field charge extraction fce diode [10] has ensured soft performance under all operating conditions. due to the presence of anode shorts in the bigt, the lateral current flowing above the large pilot-igbt area forward biases the p-n junction and additional hole injection produces a small tail current providing the required softness and causing only a minimal increase of the switching losses. as a typical example, for the igbt mode of operation, this approach means that stronger anode injection is not anymore required to provide only softer performance at the expense of higher losses, higher leakage currents and strong dynamic avalanche conditions as is the case with igbts. fig. 7 shows the igbt mode turn-off for 6.5kv devices. the bigt exhibits clearly a soft tail with no abrupt drop in the current during the later stages of the turn-off event as for the igbt. the same effect is also present in the diode mode. here it is of more importance due to the fact that the n-base region design of the bigt is similar to the igbt and is not optimized for diode operation. a standard diode using an igbt n-base region design with a low punch through voltage would be very susceptible to snappiness even under nominal conditions. because of the fce effect induced by the anode shorts, the diode is turning off softly and without any visible snap-off. fig. 8 shows diode turn-off waveforms at the most critical conditions at a low current and low temperature (-40ºc). -600 0 600 1200 1800 2400 3000 3600 4200 4800 -200 -100 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 14 v o lt a g e [ v ] v g e [ v ] x 1 0 , c u rr e n t [a ] time [us] ic=600a, vc=3600v, tj=125c, ls=300nh -600 0 600 1200 1800 2400 3000 3600 4200 4800 -200 -100 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 14 v o lt a g e [ v ] c u rr e n t [a ], v g e [ v ] x 1 0 time [us] ic=600a, vc=3600v, tj=125c, ls=300nh fig. 7 6.5kv/600a igbt (left) and bigt (right) module turn-off waveforms under nominal conditions. 390 m. rahimo, l. storasta -900 0 900 1800 2700 3600 4500 5400 -1800 -1400 -1000 -600 -200 200 600 1000 0 1 2 3 4 5 v o lt a g e [ v ] c u rr e n t [a ] time [us] diode turn-off 4500v 50a-600a fig. 8 6.5kv/600a bigt module diode-mode turn-off waveforms at critical low current conditions at -40ºc. 2.3. the bigt short circuit in addition, the bigt shows that the high local anode injection levels needed with the presence of n-types shorts have brought about improvements on the short circuit soa capability. the bigt will normally require higher anode p-region doping concentrations compared to an igbt anode for obtaining the same over-all injection efficiency and hence on-state voltage drop and turn-off losses. during short circuit, an important current dependent failure mode occurs during the short circuit current pulse in spt designs which is mainly dependent on the charge compensation effect near the buffer region of the igbt which in turn is dependent on the anode and buffer design [11]. under high vge and/or lower operating temperatures, the resulting higher short circuit current will limit the short circuit soa (scsoa) capability. in a bigt, the higher anode p-region doping provide improved charge compensation and hence higher scsoa. fig. 9 shows the short circuit test of a 3300v/50a bigt and reference igbt chips at 25°c, and a gate voltage of 18v. fig. 9 3.3kv igbt and bigt single chip short circuit type 1 waveforms at room temperature. optimization and advantages of the bimode insulated gate transistor 391 both devices are designed for the mos cell, anode and buffer to have similar short circuit current and turn-off losses. while the bigt has a faster turn-on behavior resulting in a higher overshoot current, it is still capable of withstanding this test at a dc-link voltage of 1800v compared to the igbt which fails already at 900v. the bigt chip is also capable of passing the test for higher gate voltages up to 19.5v. in addition to the advantages discussed previously, this feature in the bigt design provides further flexibility for design trade-offs required to tailor the bigt for improved overall performance. 5. conclusions the bigt concept is foreseen to play an important role in many future power electronics applications. hence, it is important to understand the design trade-off improvements and challenges presented by the bigt device concept when compared to state of the art igbts and diodes. this paper has presented a comprehensive review of these design aspects based on published and newly obtained results for a high voltage bigt. references [1] h. takahashi, a. yamamoto, s. anon, t. minato, "1200v reverse conducting igbt", in proc. int. sym. on power semiconductor devices & ic's ispsd`04, kitakyushu, japan, p. 133. [2] s. voss, f-j. niedernostheide, h-j. schulze, "anode design variations in 1200v trench field-stop rc igbts", in proc. int. sym. on power semiconductor devices & ic's ispsd`08, orlando, usa, 2008, pp. 169-172. [3] m. rahimo, a. kopta, u. schlapbach, j. vobecky, r. schnell, s. klaka, "the bi-mode insulated gate transistor (bigt) a potential technology for higher power applications", in proc. int. sym. on power semiconductor devices & ic's ispsd`09, barcelona, spain, 2009, pp. 283-286. [4] s. dewar, s. linder, c. von arx, a. mukhitinov, g. debled, "soft punch through (spt), setting new standards in 1200v igbt", in proc. pcim`00 conference, nurnberg, germany, 2000. [5] j. vobecky, m. rahimo, a. kopta, s. linder, "exploring the silicon design limits of thin wafer igbt technology: the controlled punch through (cpt) igbt", in proc. int. sym. on power semiconductor devices & ic's ispsd`08, orlando, usa, 2008, pp. 76-79. [6] m. rahimo, u. schlapbach, a. kopta, j. vobecky, d. schneider, a. baschnagel, "a high current 3300v module employing rcigbts setting a new benchmark in output power capability", in proc. int. sym. on power semiconductor devices & ic's ispsd`08, orlando, usa, 2008, pp. 68-71. [7] l. storasta, a. kopta, m. bellini, m.t. rahimo, u. vemulapati, n. kaninsky, "the radial layout design concept for the bi-mode insulated gate transistor", in proc. int. sym. on power semiconductor devices & ic's ispsd`11, san diego, usa, 2011. [8] d. wigger, d. weiss, h-g. eckel, "impact of inhomogeneous current distribution on the turn-off behaviour of bigts", in proc. pcim 2013, pp. 860-867. [9] l. storasta, s. matthias, m.t. rahimo, a. kopta, "bipolar transistor gain influence on the high temperature thermal stability of hv-bigts", in proc. int. sym. on power semiconductor devices & ic's ispsd`11, bruges, belgium june 2012, pp. 157-160. [10] a. kopta, m. rahimo, "the field charge extraction (fce) diode, a novel technology for soft recovery high voltage diodes", in proc. int. sym. on power semiconductor devices & ic's ispsd`05, santa barbara, usa, 2005, pp. 83-86. [11] a. kopta, m. rahimo, u. schlapbach, n. kaminski, d. silber, "limitation of the short-circuit ruggedness of high-voltage igbts", in proc. int. sym. on power semiconductor devices & ic's ispsd`09, barcelona, spain, 2009, pp. 33-36. instruction facta universitatis series:electronics and energetics vol. 27, no 1, march 2014, pp. 13 23 doi: 10.2298/fuee1401013i review of advanced igbt compact models dedicated to circuit simulation  petar igić 1 , nebojša janković 2 1 electronic system design centre, college of engineering, swansea university, singleton park, swansea sa2 8pp, united kingdom 2 department of microelectronics, faculty of electronics engineering, university of niš, serbia abstract. the paper aims to review the research area of the igbt compact modelling and to introduce different device models. the models are separated in two groups, one that solves ambipolar diffusion equation (ade) and one that does not. both types of compact models have been successfully used in the past for power electronic circuit design. key words: igbt, compact, model, power, inverter, circuit 1. introduction insulated gate bipolar transistors (igbts) are devices of choice in modern power converter systems targeting medium to high voltage and current applications, such as hybrid or electric vehicles [1], [2]. during the power circuitry early design stages, one could consider an igbt to be a binary on-off switch, thus achieving very fast simulation of the converter operation. however, this modelling approach cannot be used to analyze some key aspects of the device and converter performance such as heat dissipation for example, very important design parameter especially during operation at high switching frequencies [3]-[5]. obviously, this will not lead to robust equipment design, as it does not provide any information regarding switch failure mechanisms. to overcome all the above issues, one could develop and use the igbt models based on full internal physics of the device. these would be typically 2d or 3d finite-element (fe) models developed and run in some of the commercially available simulation tools. this modelling approach will provide designers with detailed knowledge of the igbt devices, but it requires very long simulation time, and it is numerically prohibitive if one would like to study complex circuits containing multiple power devices requiring many switching events [6]. the compact modelling approach is placed between these two extremes [7]-[27]. compact models are lower complexity, but yet fully physically based and very accurate,  received december 18, 2013 corresponding author: petar igic electronic system design centre, college of engineering, swansea university, singleton park, swansea sa2 8pp, united kingdom (e-mail: p.igic@swansea.ac.uk) 14 p. igic, n. jankovic models of the power devices dedicated to circuit simulation. this physical modelling approach could be based on certain mathematical simplifications of the fundamental semiconductor charge transport equations, for example [9], [20], [21], [24]. in order to develop an igbt model that will describe correctly its static and dynamic behaviour, the main challenge is to incorporate into a device model conductivity modulation and nonquasistatic charge storage effects [22], [23]. the absence of an industry-accepted igbt model and the pronounced industry-need for more accurate igbt compact model have triggered very intensive research in this area for more than a decade. the distinct challenge in developing igbt compact model for circuit simulation lays in the fact that model needs to satisfy some refuting requirements. it needs to provide high quantitative accuracy, short cpu time, and physical, yet easy to determine model parameters. as a result different igbt compact models have been developed and presented in the literature, some of those suitable for long time inverter simulations (minutes) [15]. the aim of this paper is to review the research area of the igbt compact modelling and to introduce different models, such as igbt models based on the ambipolar differential equation (ade) solutions [18]-[24] and the ones which are not solving ade, typically physics-based sub-circuit models [14], [16], [17], [25]-[27]. 2. ade solution based models to describe igbt's static and dynamic behaviour, the incorporation of conductivity modulation and non-quasistatic charge storage effects into the device model is vital [7], [22]. when the excess carrier density overcomes the igbt's n base doping level by several orders of magnitude within the carrier storage region, the assumption that the excess electron concentration, n, and excess hole concentration, p, are equal is valid [21]. then, the carrier transport is determined by the ambipolar diffusion equation (ade): 2 2 ( , ) ( , ) ( , )p x t p x t p x t d x t       (1) where d represents the ambipolar diffusion constant and stands for the ambipolar carrier lifetime. the boundary conditions for the above equation are determined by the current at the left (xl) and right (xr) ends of the carrier storage region. at the left end of the carrier storage region, the electron and hole currents are given by: ( ) ( ) l electron l nl n l n x n i x i anq e x aqd x       (2) ( ) ( ) l hole l pl p l p x p i x i apq e x aqd x       . (3) in the above equations, q stands for the electron unity charge, a is the cross sectional area of the carrier storage region, dn and dp stand for the electron and hole diffusion constants respectively, n represents the electron mobility, p is the mobility of the holes, and e stands for the electric field. dividing equation (2) with dn and equation (3) with dp and then subtracting (3) from (2) (under condition n  p andn /dn =p /dp) gives a derivative boundary condition on p for the ade at the left end of the carrier storage region [18]-[22]: review of advanced igbt compact models dedicated to circuit simulation 15            p pl n nl x d i d i qax p l 2 1 . (4) a similar expression is obtained for the right end of the carrier storage region:            p pr n nr x d i d i qax p r 2 1 , (5) where inr and ipr represent electron and hole currents respectively at the cathode end (see fig. 1). (a) (b) fig. 1 schematic representation of the nptigbt structure (a) and bipolar part of the structure (b) 2.1. exponential solution based models an exponential approximation based solution for this equation has been developed. to model the plasma carrier distribution, set of exponential shape functions is used [21]. these shape functions are found to model the shape of the plasma correctly, without 16 p. igic, n. jankovic oscillations in the internal distribution. the slopes to the carrier distribution at the boundaries are also physically correct. in steady state forward bias operation the plasma carrier concentration has a distribution of catenary form requiring just two exponential basis functions giving [21]: lxlx beaep //  (6) where l is the diffusion length. in transient operation, more complex profiles can be approximated using a number of exponential basis functions with a range of decay length parameters, shorter than the steady state ones. the models reported in [21], [22] actually uses up to seven exponential basis functions to model the plasma distribution during transient operation. to implement model and make it functional, one needs to determine forward junction voltage between p+ emitter and nbase (see fig. 1), the ohmic voltage drop across the plasma region, the depletion voltage, depletion capacitance, and depletion current at the anode end. the depletion current is a small extra current component that exists under high speed transient conditions as described in [21], [22]. this model has been used successfully to predict switching characteristics of different commercially available igbt devices; one example is given in fig. 2. turn-off time [s] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v a [ v ] -100 0 100 200 300 400 500 i a [a ] -3 0 3 6 9 12 15 -------experiment -------compact model fig. 2 igbt turn-off characteristic experimental results vs. compact model the downside of this modelling approach is model complexity [20], large number of model parameters [19], [22], difficult model implementation in circuit simulators such as pspice, long simulation time. many modern igbt devices include localize life time control (llc) region in order to reduce current tail during device turn-off and increase operating frequency [11]. the above discussed model does not have the ability to directly include llc region. in order to include this feature, it needs some alterations. if, for example, llc region is inserted between the p-emitter and arbitrary dashed line shown in fig. 1b, the plasma carrier distribution model will need to be consider separately across these two regions(each having different lifetimes) left and right from the arbitrary dashed line. this would introduce another set of equations needed to describe boundary between the llc region and rest of the nbase region, thus making model even more complex. review of advanced igbt compact models dedicated to circuit simulation 17 2.2. fourier series solution based models a fourier series solution based model has been developed and described in [24]. it has been based on the research results showing that the diffusion equation could be solved by means of an electrical analogy [23]. the plasma carrier concentration has a distribution of a sum of fourier series components in space: 1 0 1 2 1 ( ) ( ) ( )cosk k k x x p p t p t x x            (7) where k represents the harmonic number. set of equations described in (7) can be represented in the form of two rc lines corresponding to the even and odd values of k. the rc lines are driven by currents defined by the boundary conditions as described in [24]. fig. 3 analogue solution to the ade [24] fig. 3 shows analogue solution to the ade with fixed or mobile boundaries. in fig. 3, qs represents total carrier stored charge, p0,…,pk stand for fourier series coefficients, w is the width of the n-base region, xl and xr are the positions of the plasma region left and right boundaries (see fig. 1b), pxl and pxr corresponds to the excess carrier concentration at xl and xr respectively, and currents ipl,r and inl,r are as depicted in fig. 1a. the model could be implemented in any general purpose simulation software having non-linear elements and variable parameters [24]. 3. physics-based sub-circuit compact models common feature of all sub-circuit compact models is that they are not trying to solve ambipolar diffusion equation in order to reproduce measurement data or predict device characteristics. recently, hisim-igbt compact model has been developed and presented [25]-[27]. model is based on the consistency of the potential distribution within the igbt device by considering in great details the mosfet surface potentials and the bjt junction potentials, as described in [25], [27]. the model has been originally developed for trench igbt device. hisim-igbt equivalent circuit is shown in fig. 4. the igbt's 18 p. igic, n. jankovic mosfet part is described with a conventional model, and the main model development effort has been put into extending the bjt shown in fig. 4, since igbt output current is managed by the bipolar transistor theory. in this model, the igbt characteristics are determined by three parameters, the trench-bottom mosfet gate charge, qtb, the base resistance, rb, and the nqs igbt base charge model, qb. fig. 4 hisim-igbt equivalent circuit [27] another popular igbt model has been presented by jankovic et al. in [14], [16], [17]. in [14], the physics-based igbt sub-circuit model which successfully included the effects of localised lifetime control (llc) on device electrical performance has been described. in particular, the model depicts the non-punch trough igbts with different locations of llc region. in what follows, the description of model implementation in spice will be given with attention to the modifications performed to include the lifetime control effects. the equivalent sub-circuit of the igbt model implemented in spice is shown in fig. 5. fig. 5 llc igbt equivalent circuit it includes a n-channel mosfet, a wide-base pnp bipolar transistor (bjt), the voltage-dependent base resistor rbb, the p-n junction capacitances, cbc and cbe, the gate overlapping source capacitance cgs, and the drain-gate overlapping capacitance cgd (the gate-overlap capacitor cox in series with the gate induced depletion capacitance cd). the review of advanced igbt compact models dedicated to circuit simulation 19 n-channel mosfet part of the igbt is modelled using a spice level 5 model. pnp bjt is low efficient and its operation is fully affected by the llc technique. fig. 6a shows the schematic of the pnp bjt circuit model consisting of two voltage-controlled current sources (ie and ic) and the junction capacitances cbe and ccb. the current sources mirror the input/output currents of separately developed sub-circuit shown in fig. 3b. the carrier transport trough the emitter and the base quasi-neutral regions (qnrs) are described with two equivalent loosy transmission lines (tls) consisting of identical rccells shown in figure 6c. the input voltage generators f(ube) and f(ucb) perform the voltage transformations {exp(ube /vt) 1} and {exp(ucb/vt) 1}, respectively. the rc-cell elements are non-linear conductance, capacitance, resistance and load impedance denoted as gk, ck, rk and zl, in fig. 6. their values are calculated by the following formulas [21]: 2 2 1 2 5 1 6 1 2 3 1 2 4 2 2 1 2 1 7 1 2 8 1 2 1 2 9 1 2 1 1 1 ( 1 1 ) (1 1 ) (1 ) (1 1 ) 1 1 (1 1 ) (1 1 ) k k k k u k k k k k k k k l n c c c u g c c c c u c c u c u u r c c u c c u c u z c c u                                (8) where u2k-1, u2k+1 and u2k are the input, the output and the middle node voltage, respectively, in the k-th rc-cell. (a) (b) (c) fig. 6 llc igbt model details 20 p. igic, n. jankovic the parameters c1-c9 are related to the physical and technology parameters of the emitter or the base qnrs as: sendie endddpie ie d t sat dnie d ie iet d ied ie vnq n c wncqn c wqn n c w vc v c wncqn c n wqn c nqv wn c wqn c n n c 2 , , 9 2 62 0 3 2 10 8 2 5 2 2 0 27 0 42 2 1 2 , 2 , , 2 , 2 , , 2 , 2 , 4              (9) where nd is the doping concentration, 0 is the doping-dependent low-field mobility, vsat represents the drift saturation velocity, 0stands for the low-injection level dopingdependent minority carrier lifetime, nie is the effective intrinsic carrier concentration incorporating band-gap-narrowing effects , and cn, cp are the auger's recombination constants. the parameterwis a physical width of single rc-cell, which is obtained by dividing a zero-bias qnr width w with the chosen number n of rc-cells (w=w/n). in [14], the emitter qnr is represented with three rc-cells. since the llc substantially decreases0 of particular device area, it follows from eqs. (8) and (9) that the rc-cells of controlled recombination region must have different gk element. it is illustrated in fig. 6c where the rc-cell of the controlled region is shown separately with different conductance g(). note that the bjt with the first (from left to right) rc-cell shaded shown in fig. 6b corresponds to the location of the llc region within the igbt. the model, as described above, has been used successfully for the prediction of the inverter circuit power losses [16] and also to investigate igbt tail current characteristics at different temperatures as shown in fig. 7. fig. 7 simulated and measured anode tail current and anode voltage of pt igbt during the device turn-off at 25 o c, 75 o c and 125 o c review of advanced igbt compact models dedicated to circuit simulation 21 4. electro-thermal (et) modelling strategy thermal compact model of an igbt is equally important as its electrical counterpart to accurately predict circuit performance [3]-[5]. the work presented in [3] describes an et modelling strategy that has been widely accepted by compact modelling research community and successfully applied since. it could be described in what follows. adding an extra node, thermal node, to the electrical compact model of the igbt device an electrothermal (et) models can be formulated. this thermal node has information regarding junction temperature of the device tj and it represents a connection between the active devices and rest of the circuit thermal network [3]. this is schematically represented in the fig. 8. a structure diagram of the et compact device model which shows the interaction between thermal and electrical networks through the electrical and thermal nodes is shown in fig. 9. as can be seen from the fig. 9, the instantaneous value of the device temperature estimated by the thermal network is used for the calculation of the temperature dependent model parameters and temperature dependent silicon properties. then, these temperature dependent values are used by the et compact device models to calculate instantaneous electrical characteristics as well as instantaneous dissipated power. finally, the dissipated power is used as an input parameter by the thermal network, and the device electrical characteristics are transferred to the electrical network. fig. 8 igbt et compact model – electrical contacts (g, a, k) as well as thermal node (tj) are shown fig. 9 structure diagram of the et compact model – interaction with the electrical and thermal network is shown 22 p. igic, n. jankovic the thermal parts of the compact models are represented using a thermal rc network due to an electrical analogy [4]: thermal resistance is represented by an electrical resistance, thermal capacitance by an electrical capacitance, and dissipated power by current source [29]. either foster or cauer rc networks can be used for this purpose [28], [29]. since the foster network is not directly suitable for the heat-flow path identification (because of the node-to-node heat capacitances), the cauer rc network is preferred choice for thermal device characterisation. cauer network includes only node-to-ground capacitances and it represents a discretised image of the real heat-flow structure. network elements can be determined by using a deconvolution method for extraction of the rc thermal network parameters from the thermal transient response of the device for a step function excitation [28]. namely, applying an abrupt dissipation step onto the chip, the time-function of the rise of the chip temperature has to be determined. either experimental method or 3d finite element model could be employed to obtain these thermal transient responses [29]. 5. conclusions the research area of the igbt compact modelling has been reviewed and different device models have been introduced. the models could be separated in two groups, ones that solve ambipolar diffusion equation (ade) and others that do not. the models based on ade solution, one could claim, are more physically based, but they are more complex to include in standard circuit simulator, need longer cpu time, might have convergence problems when simulating the circuits with larger number of igbts. both types of compact models have been successfully used in the past for power electronic circuit design. references [1] r.s. chokhawala, j. catt and b.r. pelly, "gate drive considerations for igbt modules", ieee transactions on industry applications, vol. 31,pp. 603-611, 1995. [2] p. palmer and a.n. githiari, "the series connection of igbt's with active voltage sharing", ieee transactions on power electronics, vol. 12,pp. 637-644, 1997. [3] a.r. hefner and d.l. blackburn, "thermal component models for electrothermal network simulation", ieee transaction on components, packaging and manufacturing technology, vol. 17–a, pp. 413-424, 1994. [4] v. szekely, a. poppe, a. pahi, a. csendes, g. hjas and m. rencz, "electro-thermal and logi-thermal simulations of vlsi designs", ieee transactions on vlsi systems, vol. 5, pp. 258-269, 1997. [5] h. vinke and c.j. clemens, "compact models for accurate thermal characterisation of electronic parts", ieee transaction on components, packaging and manufacturing technology, vol. 20-a, pp. 411419, 1997. [6] s. wunsche, c. class, p. swartz and f. winkler, "electro-thermal circuit simulation using simulator coupling", ieee transactions on vlsi systems", vol. 5, pp. 277-282, 1997. [7] a.r. hefner, "a dynamic electro-thermal model for the igbt", ieee transactions on industry applications, vol. 30, pp. 394-405, 1994. [8] p. turkes and j. sigg, "electro-thermal simulation of power electronic systems", microelectronic journal, vol. 29, pp. 785-790, 1998. [9] r. kraus and h.j. mattausch, "status and trends of power semiconductor device models for circuit simulation", ieee transactions on power electronics, vol. 13, pp. 452-465, 1998. [10] a. ramamurthy, s. sawant and b.j. baliga, "modeling the [dv/dt] of the igbt during inductive turn off", ieee transactions on power electronics, vol. 14, pp. 601-606, 1999. [11] e. napoli, a.g.m. strollo, p. spirito, numerical analysis of local lifetime control for high-speed low-loss p-i-n diode design, ieee transactions on power electronics, vol. 14, pp. 615-621, 1999. review of advanced igbt compact models dedicated to circuit simulation 23 [12] a. ammous, s. ghedira, b. allard, h. morel, d. renault, "choosing a thermal model for electrothermal simulation of power semiconductor devices", ieee transactions on power electronics, vol. 14, pp. 300-307, 1999. [13] c.m. tan and k.-j. tseng, "using power diode models for circuit simulations a comprehensive review", ieee transactions on industrial electronics, vol. 46, pp. 637-645, 1999. [14] n. jankovic, p. igic and n. sakurai, "compact model of the igbt with localized lifetime control dedicated to power circuit simulations", solid state electronics, vol. 54, pp. 268 – 274, 2010. [15] p. igic and z. zhou, "high-speed electro-thermal modelling of a three-phase igbt inverter power module", international journal of electronics, vol. 97, pp. 195 – 205, 2010. [16] n. jankovic, z. zhou, s. batcup and petar igic, "an advanced physics-based sub-circuit model of pt igbt", international journal of electronics,vol.96, pp. 767 – 779, 2009. [17] n. jankovic, t. pesic and p igic: "all injection level power pin diode model including temperature dependence", solid-state electronics, vol. 51, pp. 719-725, 2007. [18] a.j. forsyth, s.y. yang, p.a. mawby, p. igic, "measurement and modelling of power electronic devices at cryogenic temperatures", ieee proc. on circuits, devices and systems, vol. 153, pp. 407 – 415, 2006. [19] p. igic, p.a. mawby and m.s. towers, "physically based 2d compact model for power bipolar devices", international journal of numerical modelling – electronic networks, devices and fields, vol. 17, pp. 397-405, 2004. [20] p. igic, p.a. mawby and m.s. towers, "a 2d physically based compact model for advanced power bipolar devices", elsevier's microelectronics journal, vol.35, pp. 591-594, 2004. [21] p. igic, p.a. mawby, m.s. towers and s. batcup, "a new physically based pin diode compact model for circuit modelling applications",iee proc. on circ., devices and sys.,vol.149, pp. 257-263, 2002. [22] p. igic, p.a. mawby, m.s. towers, w. jamal and s. batcup, "investigation of the power dissipation during igbt turn-off using a new physics-based igbt compact model", microelectronics and reliability,vol.42, pp. 1045-1052, 2002. [23] p. gillet, m. kallala, j-l. massol and p. leturcq, "analogue solution of the ambipolar diffusion equation", c.r. acad. sc. paris, t. 321, serie ii-b, pp. 53-59, 1995. [24] p. leturcq, j-l. debrie and m.o. berraies, "a distributed model of igbts for circuit simulation", in the proc. of epe'97, pp. 1.494-1.501, 1997. [25] m. miyake, a. ohashi, m. yokomichi, h. masuoka, t. kajiwara, n. sadachika, u. feldmann, h.j. mattausch, m. miura-mattausch, t. kojima, t. shoji andy. nishibe, "a consistently potential distribution oriented compact igbt model", in the proc. of power electronics specialists conference, pp. 998-1003, 2008. [26] d. navarro, t. sano and y. furui, "a sequential model parameter extraction technique for physicsbased igbt compact model", ieee trans. on electron devices, vol. 60, pp.580-586, 2013. [27] m. miyake, a. ohashi, m. yokomichi, h. masuoka, t. kajiwara, n. sadachika, u. feldmann, h.j. mattausch, d navarro, u. feldmann, t. kojima, t. ogawa and t. ueta, "hisim-igbt: a compact si-igbt model for power electronic circuit design", ieee trans. on electron devices, vol. 60, pp. 571-579, 2013. [28] v. szekely, "identification of rc network by deconvolution: chances and limits", ieee trans. on fundamental theory and applications, vol. 45, pp. 244-258, 1998. [29] p. igic, p.a. mawby, m.s. towers and s. batcup, "thermal model of power semiconductor devices for electro-thermal circuit simulations", in proc. 23rd ieee international conference on microelectronics (miel 2002), nis, yugoslavia, vol. 1, pp. 171-174, 2002. http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=2190 http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model 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http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model http://ieeexplore.ieee.org/xpl/abstractauthors.jsp?tp=&arnumber=4592060&querytext%3dmiyake+ohashi+igbt+model plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 34, no 4, december 2021, pp. 569-588 https://doi.org/10.2298/fuee2104569b © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper cuckoo search algorithm to solve the problem of economic emission dispatch with the incorporation of facts devices under the valve-point loading effect larouci benyekhlef 1*, sitayeb abdelkader2, boudjella houari1, ayad ahmed nour el islam1 1department of electrical engineering, faculty of applied sciences, university kasdi merbah ouargla, ouargla, algeria, 2applied research unit on renewable energies “uraer ghardaia”, ghardaïa, algeria abstract. the essential objective of optimal power flow is to find a stable operating point which minimizes the cost of the production generators and its losses, and keeps the power system acceptable in terms of limits on the active and reactive powers of the generators. in this paper, we propose the nature-inspired cuckoo search algorithm (csa) to solve economic/emission dispatch problems with the incorporation of facts devices under the valve-point loading effect (vpe). the proposed method is applied on different test systems cases to minimize the fuel cost and total emissions and to see the influence of the integration of facts devices. the obtained results confirm the efficiency and the robustness of the cuckoo search algorithm compared to other optimization techniques published recently in the literature. in addition, the simulation results show the advantages of the proposed algorithm for optimizing the production fuel cost, total emissions and total losses in all transmission lines. key words: combined economic emission dispatch, opf, cuckoo search algorithm, vpe, facts devices. 1. introduction the production of electrical power is marked by several orientations as limiting the environmental impact of the generating and use of energy, increasing the energy efficiency of systems and developing low-cost production and minimizing gas emissions toxic in the atmosphere under the valve-point effect [1]. received april 3, 2021; received in revised form august 14, 2021 corresponding author: larouci benyekhlef department of electrical engineering, faculty of applied sciences, university kasdi merbah ouargla, street ghardaia, 30000, ouargla, algeria e-mail: larouci.benyekhlef@univ-ouargla.dz 570 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam the impact of power plants on the environment has changed the way power grids are managed [2]. however, recent awareness of the toxic effects of gases emitted by fossil fuel power plants and the new stringent environmental laws imposed on power producers have led to the incorporation of environmental considerations into the methods that govern the production of electricity [3] so, the emissions and fuel cost must be considered simultaneously to provide the true measure of optimum production [4]. currently, with the new energy market deregulation system [5], there is increased interest in facts (flexible alternative current transmission systems) for the operation and control of power systems [6], this is due to the new load constraints and new contingencies. the installation of facts has become essential to increase the transmission capacity of the power system, reduce losses, and improve the safety and the controllability of an electrical network [7]. these facts devices are capable of changing network parameters quickly and efficiently to achieve better system performance [8]. the mathematical formulations of all the above tasks to be performed by power producers are therefore becoming more and more complex [9]. this growing complexity has led many researchers to turn to nature-inspired algorithms to solve these problems [10]. these algorithms are those developed by imitating natural phenomena and biological models [11-12]. they offer robust and competitive solutions. the objectif of this article is to propose a nature-inspired algorithm known as cuckoo search algorithm (csa) [10], in order to provide the optimal solution to the optimal power flow problems. the proposed technique is applied on ieee 30-bus system considering valve-point effect (vpe) with and without installing two facts devices (static var compensator (svc) and statcom), to reach the lowest values of fuel cost, installation cost of facts devices, and to reduce toxic gas emissions. the statistical results are as compared with other algorithms existing in the recent literature. the rest of this article is structured as follows: the definition and mathematically formulation of the opf problem are offered in section 2, while section 3 addresses a brief description of the csa. the simulation results are carefully studied and analyzed in section 4. finally, conclusion and future suggestions are given in section 5. 2. optimal power flow the optimal power flow (opf) was conceived as an extension of the conventional economic and emission dispatch [13-14]. the opf problem is large-scale non-convex optimization problem, which may also have uncertain variables. in general, the opf problem seeks to optimize the steady state performance of a power system in terms of an objective function while satisfying several equality and inequality constraints [15]. in contrast, opf aims to optimize an objective function by finding optimal free variables while keeping the network constraints in their acceptable limits [16]. 2.1. mathematical model of economic dispatch the cost of each generating unit is typically represented by fuel cost. generator curves are generally represented as quadratic convex curves of second order function [17-18]. the total fuel cost function is formulated as follows: cuckoo search algorithm to solve the problem of economic emission dispatch with facts 571 igiigiigii cpbpapf ++= 2)( (1) the coefficients ai, bi and ci are numerically known. the optimal functioning of a set of thermal production units can be seen by the model:  = =      gn i gigi ppcminimize 1 i1 )(f (2) where: ng is the total number of generators on the system under the constraints of equality and inequality type. 2.1.1. constraints a. equality constraint these constraints are represented by nonlinear power flow equations [20]. the sum of the active and reactive generated powers in the network must be equal to the sum of the active and reactive powers consumed with transmission losses, this constraint is given by [21]: 0 1 )cos( = = −−−− ng j ijjiijyjvivpp digi  (3) 0 1 )sin( = = −−−− ng j ijjiijyjvivqq digi  (4) b. inequality constraints these constraints represent the operating limits of the power system (generator voltages, real and reactive power, transmission lines, transformers, facts, etc.) [22-23]. maxmin gigigi ppp  (5) maxmin gigigi qqq  (6) maxmin kikiki vvv  (7) maxmin factsfactsfacts sss  (8) maxmin svcsvcsvc qqq  (9) 2.2. mathematical model of economic dispatch with valve-point loading effect in some large generators, their cost functions are also non-linear, due to the effect of valve-point loading (vpe) [24]. this effect will increase several local minimum points in the cost function and make the problem more difficult. the fuel cost function with the effect of the valve-point loading can be expressed as follows [25]: 572 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam ))(sin()( min, 2 gigiiiigiigiigii ppfecpbpapf −+++= (10) where pgi is the real power generation of unit i in (mw), ei, and fi are cost coefficients of ith generator due to vpe. chiang in [26-28], presented a realistic economic dispatching problem by simultaneously considering the fuels cost and the effect of the valve-point loading to make the economical dispatching solution more precise. 2.3. mathematical model of environmental dispatch the total emission can be expressed as [29]: igiigiigii pppe  ++= 2 )( (11) where: the coefficients γi, βi and αi are nox emission coefficients numerically known [30]. 2.4. mathematical model of combined economic emission dispatch problem the study of economic-environmental dispatch consists of the simultaneous minimization of the two functions given by equations (1) and (11). we therefore transform the bi-objective optimization problem into a single-objective optimization problem, by introducing a price penalty factor [31]. this factor is defined as the ratio between the maximum cost and the maximum emissions of each generator [32]: ng,………2,1,=i; kg $ )( )( max max         = gi gi p pe pc f (12) the steps to determine the price penalty factor specific for a given load are: determine the ratio of the maximum cost and the maximum emissions for each generator. rank the values of these factors in ascending order. the sum of the maximum powers of each generator starting with the power of the plant with the lowest factor up to:  =  gn i dpp 1 max gi at this point, fp tied to the last unit in the process and the price penalty factor for the given load. after determining this factor, we can represent the economic-environmental dispatch function by the following equation [33-34]: 2 2 1 1 ( ) ( ) ( ) g gn n gi i gi i gi i p i gi i gi i i i p a p b p c f p p = =  = + + +  +  +   (13) equation (14) can be rewritten as follows [35]: 2 1 ( ) ( ) gn gi i gi i gi i i p c p b p a =  = + + (14) cuckoo search algorithm to solve the problem of economic emission dispatch with facts 573 with: . , . , .i i p i i i p i i i p ia a f b b f c c f= +  = +  = +  (15) the minimization of this function is done by taking into account the type of the equality and inequality constraints. 2.5. opf with cost function model of svc devices the cost of svc device, was developed by the manufacturer siemens. the cost function of the svc in ($/kvar) is as follows [36]: 127.380.3051-0.00031 2 += svcsvcsvc ssc (16) where: ssvc is reactive power of svc in mvar. the formulation of the optimal choice problem of svc locations can be expressed as follows [37-38]: ( )fcpccmin gitotal 21 +      = (17) 0),( 1 =gfe (18) 0)(,0)( 21  gbfb (19) ctotal: the total objective function comprising the svc investment cost and the cost of production. fi (pgi) : the generator cost function given by equation (1). c1 (f): the investment cost function of svc given by the equations (16) and (17). e1: represents the power flow equations. b1, b2: are the inequality constraints of the svc and the optimal power flow, respectively. f, pgi : represent the variables parameters of the svc and the powers supplied by the alternators. the fuel cost is expressed in ($/hour) while the investment costs of facts are expressed in ($). these must be expressed in $/hour. normally facts are designed to be in service for several years [39]. however, they are only used for a portion of their lifetimes for power flow control. in this research, three years are used to estimate the average cost of facts, i.e. the depreciation (from a financial view point) of facts is estimated at three years [40]: ( ) 38760 )( 1  = fc fc ($/hour) (20) where: c(f) is the investment cost of svc. the svc device, is composed of a capacitor, which is the var generator, and a tcr (thyristor controlled reactor), which behaves as a variable var absorbing load (depending on the firing angle of the thyristor valve) [41]. thus, the svc can inject or absorb a variable amount of reactive power to the power system, adapting the compensation to the load conditions at each instant (see fig.1) [42]. 574 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam l c tcr  c() l() fig. 1 static var compensator configuration. 2.5.1. opf with model and mathematical analysis of statcom a static synchronous compensator (statcom), also known as a static synchronous condenser [43] is a regulating device used on alternating current electricity transmission networks. it is based on a power electronics voltage-source converter and can act as either a source or sink of reactive ac power to an electricity network. if connected to a source of power it can also provide active ac power. it is inherently modular and electable. statcom is modelled as a controllable voltage source (ep) in series with impedance [43]. the real part of this impedance represents the copper losses of the coupling transformer and converter, while the imaginary part of this impedance represents the leakage reactance of the coupling transformer. statcom absorbs requisite amount of reactive power from the grid to keep the bus voltage within reasonable range for all power system loading. fig. 2 shows the circuit model of a statcom connected to the ith bus of a power system. fig. 2 schematic static model of statcom https://en.wikipedia.org/wiki/static_synchronous_compensator#cite_note-ieee_conference_publication_2017-2-2 https://en.wikipedia.org/wiki/alternating_current https://en.wikipedia.org/wiki/power_electronics https://en.wikipedia.org/wiki/ac_power https://en.wikipedia.org/wiki/ac_power cuckoo search algorithm to solve the problem of economic emission dispatch with facts 575 the injected active and reactive power flow equation of the ith bus are given below: 2 cos( ) cos( ) 1 p p k k k p k p p n p g v v e y v v y i j ij i j ij j = −  −  −  +  −  −  = (21) 2 sin( ) sin( ) 1 p p k k p p k p p n q b v v e y v v y i j ij i j ij j = − −  −  −  +  −  −  = (22) the implementation of statcom in transmission system introduces two state variables (|ep| and δp); however, |vk | is known for statcom connected bus. 3. cuckoo search algorithms the cuckoo search algorithm (csa) is one of the newer nature-inspired metaheuristic algorithms developed by xin-she yang and suash deb in 2009 [10], [44]. csa is a population-based search method that is used as a tool for optimization to solve complex, nonlinear and non-convex optimization problems. the algorithm of csa uses three idealized rules [45]: (a) each cuckoo lays an egg place them in time and randomly chosen nest. (b) the best nest with high quality eggs is passed on to the next generation. (c) the number of available host nests is fixed and a host bird can discover an exotic egg with a conversation of pa ϶ [0, 1]. in this case, the host bird can either drop the egg or leave the nest to build a brand new nest in a new location. the cs method's key steps can be described as [46-47]: 1. select the value of the csa parameter, which is the number of nests (eggs) (n), step size parameter (β), probability of discovering (pa), and maximum number of iterations to end the cycle. 2. randomly generate an initial population of n host nests  ( )nix i ,....,2,1, = . each nest represents a possible solution to an optimization problem using objective functions ( )xf and decision variables   t mi xxxx ,...,, 21 = . 3. use levy flights to get a cuckoo randomly and evaluate its fitness i f .  .1 +=+ ii xx (23) where λ is a random walk based on levy flight (1 < λ ≤ 3). 4. randomly choose a nest among n (say j) and evaluate its fitness fj. if fj < fi, replace j with the new solution. 5. abandon a fraction of the worst nests behind and create new ones. this is done depending on the probability parameter (pa). first, check whether each nest maintains its current position (equation (24)). the matrix r stores the values 0 and 1 so that each of them can be assigned to any component of the ith nest. 0 means that the current position is kept and 1 means that the current position is updated.      ⎯⎯ parandif parandif ri 0 1 (24) 576 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam the new nest is carried out by eq. 25: ( ) iii t i t i permpermrrxx 211 −+=+ (25) where: r is a random number from 0 to 1. perm1 and perm2 are two row permutations of the corresponding nests. r defines a probability matrix. fig. 3 a simplified flowchart of the csa 6. rank solutions and find the current best one. 7. repeat steps 3-6 until completion criteria is satisfied, which are usually considered the maximum number of iterations. a simplified flowchart of the cs algorithm is demonstrated in fig. 3 [48]: cuckoo search algorithm to solve the problem of economic emission dispatch with facts 577 4. numerical results and discussion in this work, four cases of opf problem are studied; the proposed algorithm is applied on standard ieee 30-bus system considering vpe in presence of two facts devices, svc and statcom, in order to solve the optimal power flow and solving the combined economic emission dispatch problem. the single-line diagram of which is illustrated by the fig. 4. all the cases studies are executed in matlab 2017 under windows 8.1 on intel core(tm) i5-3110 cpu 2.40 ghz, with 4 gb ram. table 1 and table 2 groups the values of the coefficients of the cost an emission functions of the 06 generators, and the limit powers pmax and pmin. the cost functions of generators 1 and 2 are obtained based on the ripple curve; this curve contains a higher order of non-linearity and discontinuity due to the valve-point effect. the cost coefficients of these units are given in table 1. the parameters of the cuckoo search algorithm are: ▪ maximum number of iterations (kmax) is 100. ▪ the rate of discovery of eggs (pa) / solutions is 0.25. ▪ the number of nests is 70. 30 29 28 27 25 26 8 24 23 22 15 18 19 20 21 6 10 9 14 16 17 12 11 3 1 2 4 13 7 5 fig. 4 ieee 30 bus system structure 578 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam table 1 cost coefficients of generators for ieee 30-bus system bus pmin (mw) pmax (mw) ci ($/h) bi ($/mwh) ai ($/mw²h) di ($/mwh) ei ($/mw²h) 1 50 200 150 2 0.0016 50 0.0630 2 20 80 25 2.5 0.0100 40 0.0980 5 15 50 0 1.00 0.0625 / / 8 10 35 0 3.25 0.00834 / / 11 10 30 0 3.00 0.025 / / 13 12 40 0 3.00 0.025 / / the coefficients of the gas emission function are shown in table 2. table 2 emission coefficients of generators for ieee 30-bus system node γi ($/h) βi ($/mwh) αi ($/mw²h) 1 22.983 -1.1000 0.0126 2 25.313 -0.1000 0.0200 5 25.505 -0.0100 0.0270 8 24.900 -0.0050 0.0291 11 24.700 -0.0040 0.0290 13 25.300 -0.0055 0.0271 4.1. case 1: optimal power flow (opf) an optimal power flow program with the valve-point loading effect based on the newton-raphson method, to determine the voltages at the different bus, the generated powers and the transmission losses. the results obtained for case1 are shown in table 3. table 3 optimal power flow results bus v angle injection generation load no p.u deg mw mvar mw mvar mw mvar 1 1.06 0 200.00 -7.157 200 -7.157 0 0 2 1.043 -4.141 -1.7 26.044 20 38.744 21.7 12.7 5 1.01 -10.6513 -73.418 7.276 20.782 26.276 94.2 19 8 1.01 -7.9854 -6.254 -15.163 23.746 14.837 30 30 11 1.082 -8.0311 15.419 15.324 15.419 15.324 0 0 13 1.071 -9.66 13.613 8.157 13.613 8.157 0 0 total 10.266 -6.720 293.566 119.48 283.400 126.20 comparisons of our results with those obtained by other methods are grouped in tables 4. the results show that the cs-opf algorithm gives a better result compared to other methods reported in the literature. the total cost found by the csa small compared with those found by the methods ga, pso, fpso and ga-mga which are of the order of 923.07$/h, 928.56 $/h, 923.72$/h, 923.54$/h and 922.77 $/h respectively. the cost ranges from 0.1-0.71% in relation to the values obtained by the cs opf algorithm. cuckoo search algorithm to solve the problem of economic emission dispatch with facts 579 table 4 optimal output power for ieee 30-bus system with different algorithms variable cs opf ga [49] mga [49] pso [49] fpso [49] ga-mga [49] pg1 (mw) 200.00 199.34 199.66 199.78 199.78 199.73 pg2 (mw) 20.00 20.03 20.14 20.24 20.00 20.00 pg3 (mw) 20.78 23.13 18.70 21.60 25.42 18.49 pg4 (mw) 23.74 22.78 17.18 19.91 22.43 24.29 pg5 (mw) 15.41 13.97 10.31 14.22 13.37 16.74 pg6(mw) 13.61 14.56 27.77 18.13 12.94 14.57 pg total (mw) 293.56 293.81 293.76 293.88 293.94 293.82 fuel cost ($/hr) 921.88 923.07 928.56 923.72 923.54 922.77 losses (mw) 10.26 10.41 10.360 10.480 10.55 10.42 the value of the active losses found by csa is of the order of 10,266 mw; it is smaller compared to those obtained by of ga, pso, fpso and ga-mga techniques. figures 5, 6, 7 and 8 respectively, illustrates the variations of fuel cost, transmission losses, the generated powers and the values of the nodal voltages respectively. these graphs clearly indicate that csa converges rapidly to the optimal solution. fig. 5 convergence of fuel cost fig. 6 optimal values of the powers generated. fig. 7 variation of active losses fig. 8 nodal voltage values 580 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam 4.2. case 2: economic / environmental dispatch (with variable losses) to demonstrate the effectiveness of the proposed approach, the combined economic environmental dispatch with the optimal power flow applied by introducing the price penalty factor is resolved. the transmission losses are variable depending on the generated power. the price penalty factors of each generator, are valued at 2.000, 1.9888, 2.2296, 2.0534, 2.2198 and 2.3378 ($/ton) respectively. the optimal values of generated power, transmission losses, fuel cost, nox emission and a comparison of our results with those obtained using the hsabc algorithm (harvest season artificial bee colony) are given by the table 5. for the case of economic dispatch (opf), the value of the production cost is reduced to the minimum (921.88 $/h) and its value is better than that of economic / environmental dispatch (959.94 $/h) and environmental dispatch (1071.64 $/h). for the case of environmental dispatch, the value of total emission is very low (295.92 kg/h) compared to the combined economic environmental dispatch (336.98 kg/h) and economic dispatch (457.43 kg/h). according to table 5, it is clear that the gas emissions found by our algorithm (295.92 kg/h) are lower compared to those found by the hsabc technique which are estimated at 309.84 (kg/h). the total emission, are minimized by 13.92 (kg/h). characteristics convergence of fuel cost, nox emissions and total cost are depicted in figures 9, 10, and 11 respectively. the graphs clearly indicate that csa converges rapidly to the optimal solution. table 5 economic-environmental dispatch with variable losses variable economic dispatch combined economic emission dispatch environmental dispatch cs opf cs hsabc [50] cs pg1 (mw) 200.00 149.46 126.07 114.99 pg2 (mw) 20.00 51.41 49.74 49.07 pg3 (mw) 20.78 18.37 28.40 37.08 pg4 (mw) 23.75 31.29 31.80 28.11 pg5 (mw) 15.42 25.33 26.63 29.69 pg6 (mw) 13.61 14.99 27.17 30.41 total pg (mw) 293.56 290.85 289.81 289.36 cost ($/hr) 921.88 959.95 1048.68 1071.64 emission ($/hr) 457.43 336.98 309.84 295.92 total cost ($/hr) / 1655.53 / / losses (mw) 10.26 7.783 6.41 5.40 fig. 9 production cost fig. 10 nox emissions cuckoo search algorithm to solve the problem of economic emission dispatch with facts 581 fig. 11 total cost 4.3. case 3: opf with the presence of svc to solving opf problem with svc device, the investment cost of svc is integred in the power system. we are increasing the load from 283.40 mw to 383.40 mw, adding 100 mw at bus 20. the candidate bus at the location of the svc is the bus where the voltage drop is important, so we have chosen bus 20 to install the svc. the parameters of the svc are grouped in table 6: table 6 svc parameters’ qsvcmax (mvar) qsvcmin (mvar) c ($/kvar) b ($/kvar²) a ($/kvar3) 100 -100 188.22 -0.2691 0.0003 the power flow in power system without and with installation of svc, are reported in tables 7 and 8 respectively. from table 7, the voltage level at bus 20 (without svc) is considered the lowest (0.8939 p.u) the voltage drop, it is lower than the minimum allowable value (10.61% < 5 %). table 7 optimal power flow without svc (pload = 383.9 mw) bus v angle injection generation load no p.u deg mw mvar mw mvar mw mvar 1 1.06 0.00 199.78 2.31 199.98 2.31 0.00 0.00 2 1.043 -3.70 58.30 28.59 80.00 41.29 21.70 12.70 5 1.01 -10.89 -65.72 12.69 28.48 31.69 94.20 19.00 8 1 -9.46 4.38 1.23 34.38 31.23 30.00 30.00 11 1.062 -11.28 27.02 23.71 27.02 23.71 0.00 0.00 13 1.071 -12.52 39.10 23.96 39.10 23.96 0.00 0.00 20 0.8939 -28.42 -102.20 -0.70 0.00 0.00 102.20 0.70 total 25.36 51.29 408.76 177.49 383.40 126.20 the results obtained with csa considering svc device, are reported in table 8. 582 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam table 8 optimal power flow with svc. bus v angle injection generation load no p.u deg mw mvar mw mvar mw mvar 1 1.06 0 200.00 -0.884 200.00 -0.884 0 0 2 1.043 -3.692 58.251 19.767 79.951 32.467 21.7 12.7 5 1.01 -10.75 -64.28 7.724 29.916 26.724 94.2 19 8 1.01 -9.591 4.966 4.719 34.966 34.719 30 30 11 1.082 -11.07 30 24.123 30 24.123 0 0 13 1.071 -13.28 32.222 14.397 32.222 14.397 0 0 20 0.95 -28.34 -102.2 16.908 0 17.608 102.2 0.7 total 23.692 46.254 407.09 172.45 383.4 126.2 according to table 8, it is remarkable that svc device at bus 20 will be more effective in the bus with the greatest voltage drop. the installation of svc significantly reduces the fuel cost, transmission losses and improve the level of voltages from 0.8939 to 0.95 p.u. table 9 optimal results with and without svc. variable cs with svc cs without svc pg1(mw) 200.00 199.98 pg2(mw) 79.95 80 pg5(mw) 29.91 28.48 pg8(mw) 34.96 34.38 pg11(mw) 30 27.02 pg13(mw) 32.22 39.10 v1 (pu) 1.06 1.06 v2 (pu) 1.043 1.043 v5 (pu) 1.01 1.01 v8 (pu) 1.01 1 v11 (pu) 1.082 1.062 v13 (pu) 1.071 1.071 v20 (pu) 0.95 0.8939 total pg (mw) 407.09 408.96 losses (mw) 23.69 25.36 qsvc (mvar) 2.696 / cost svc $/kvar 187.49 / cost ($/hr) 1372.23 1375.49 from table 9, the total cost (1372.23$/h) obtained by our algorithm with the location of svc at bus 20 is lower compared to without svc (1375.49$/h). the cost is minimized by 3.2581$/h. the transmission losses in this case are minimal (23.691 mw) compared to without installing svc device (25.36 mw). they are reduced by 1.66 mw. cuckoo search algorithm to solve the problem of economic emission dispatch with facts 583 fig. 12 production cost fig. 13 variation of active losses fig. 14 optimal values of the generated powers fig. 15 voltage profile we also deduce that the cuckoo search algorithm quickly converges to the optimal solution. 4.4. case 4: opf with the presence of statcom in the third application, we are interested in the resolution of the optimal power flow with the integration of statcom in the power system. we increase the load demand from 283.40 mw to 383.40 mw. to maintain all the voltages at acceptable values, the candidate bus for the statcom location is the bus where the voltage drop is important; we have chosen the bus n°20 to install statcom. the voltage source value is considered 1.00 p.u. an optimal power flow program based on the newton-raphson method [51, 52] determines the voltages (magnitude and angle) at the different bus, the generated powers and the transmission losses. the opf results obtained with installation of statcom are cited in tables 10 and 11 respectively. 584 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam table 10 optimal power flow with statcom bus v angle injection generation load no pu degree mw mvar mw mvar mw mvar 1 1.06 0 180.245 -5.581 199.868 -5.581 0 0 2 1.043 -3.703 58.3 8.114 80 20.81 21.7 12.7 5 1.01 -10.93 -65.75 -0.161 25.44 18.84 94.2 19 8 1.02 -9.682 4.916 0.653 34.91 30.65 30 30 11 1.082 -11.04 29.97 16.64 29.97 16.64 0 0 13 1.081 -12.57 36.29 9.226 36.29 9.226 0 0 20 1 -27.97 -102.3 34.4 0 35.1 102.2 0.7 total 23.33 42.5 406.5 168.7 383.4 126.2 the simulation results illustrate in table 10, show that the addition of statcom at bus 20 improve the voltage profile (from 0.8939 to 1.00 p.u) and the levels of other voltage buses. table 11 simulation results of optimal values variable cs with svc (bus n°20) cs with statcom cs without svc pg1(mw) 200.00 199.8688 199.98 pg2(mw) 79.95 80.0000 80 pg5(mw) 29.91 25.4363 28.48 pg8(mw) 34.96 34.9129 34.38 pg11(mw) 30 29.9736 27.02 pg13(mw) 32.22 36.2903 39.10 v1 (pu) 1.06 1.06 1.06 v2 (pu) 1.043 1.043 1.043 v5 (pu) 1.01 1.01 1.01 v8 (pu) 1.01 1.02 1 v11 (pu) 1.082 1.082 1.062 v13 (pu) 1.071 1.081 1.071 v20 (pu) 0.95 1.000 0.8939 total pg (mw) 407.09 406.4819 408.96 losses (mw) 23.69 23.3280 25.36 cost ($/hr) 1372.23 1363.83387 1375.49 table 12 statcom parameter result vsh of statcom thst of statcom qsh of statcom bus p.u deg p.u 20 1.00 -28.1606 -0.3505 we can see from the table 11, that the obtained opf results indicate that csa with statcom give a better fuel cost (1363.83387 $/h) compared to case without statcom (1375.49069$/h), the cost is reduced by 11.65 $/h. the power losses have considerably decreased from 25.3580 mw to 23.3280 mw, they are minimized by 2.03 mw. therefore, the opf problem with statcom using the proposed algorithm cuckoo search algorithm to solve the problem of economic emission dispatch with facts 585 performing well represented a best solution. the fuel cost and the transmission losses are reduced and voltage magnitude are maintained at the specified value. the variations of fuel cost, transmission losses, optimal values of generated powers and nodal voltages values are illustrated in figures 16, 17, 18 and 19 respectively. fig. 16 production cost fig. 17 variation of the powers generated. fig. 18 variation of active losses fig. 19 voltage profile we also deduce that the cuckoo search algorithm quickly converges to the optimal solution. 5. conclusions the main difficulty of such an optimization problem is linked to the presence of a conflict between the production cost function, the toxic gas emission function, the valve-point loading effect and the control function cost of the facts. it requires the transformation of this multiobjective problem into a single-objective optimization problem. to do this, we have changed the problem of optimizing economic-environmental dispatching into a single-objective optimization problem, by introducing a price penalty factor. 586 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam the csa tests were validated on the ieee 30-bus system. the simulation results prove that the proposed technique present as a competing algorithm for the resolution of the mentioned problems. a comparison of obtained results with those recently published in the literature confirms the efficiency and robustness of the algorithm in finding precise solutions. in this paper, we have proved the positive contribution of the insertion of facts devices in the power system to improve voltage profile, maximize power flow capability, and reduce active power losses on the optimal management of the electrical system. we also conclude that although the complexity of the problems associated with power networks by changing their topologies by inserting facts devices and taking into account the valvepoint loading effect, the csa presents a better solution of the optimal power flow and economic-environmental dispatch. to ensure good results, in the future, we will endeavor to find a parameter-free developed technique combined with the csa algorithm and introduce it to other kinds of optimization issues, such as multi-objective ed problems with many complex constraints, dynamic ed problems and large-scale eld problems integrated renewable energy sources. references [1] j. olamaei, et al. "economic environmental unit commitment for integrated cchp-thermal-heat only system with considerations for valve-point effect based on a heuristic optimization algorithm", energy, vol. 159, pp. 737-750, sep. 2018. [2] g. d. surywanshi, et al, "4-e and life cycle analyses of a supercritical coal direct chemical looping combustion power plant with hydrogen and power co-generation", energy, vol. 217, p. 119418, 2020. [3] t. calheiros-cabral, et al, "evaluation of the annual electricity production of a hybrid breakwaterintegrated wave energy converter", energy, vol. 213, p. 118845, dec. 2020. [4] a. skorek-osikowska, et al, "thermodynamic, economic and environmental assessment of energy systems including the use of gas from manure fermentation in the context of the spanish potential", energy, vol.200, 117452, june 2020. [5] w. w. clark, agile energy systems: global distributed on-site and central grid power. elsevier, 2017. [6] x. p. zhang, "a framework for operation and control of smart grids with distributed generation", in proceedings of ieee power and energy society general meeting-conversion and delivery of electrical energy in the 21st century, ieee, 2008, pp. 1-5. [7] b. larouci, et al, "amélioration de l’influence des variations paramétriques sur les performances de l’upfc", acta electrotehnica, vol. 53, pp. 187–191, may 2012. [8] l. j. cai, et al, "optimal choice and allocation of facts devices in deregulated electricity market using genetic algorithms". in proceedings of the ieee pes power systems conference and exposition, ieee, 2004, pp. 201-207. [9] b. sereeter, et al, "optimal power flow formulations and their impacts on the performance of solution methods", in proceedings of the ieee power & energy society general meeting (pesgm), ieee, 2019, pp. 1-5. [10] x. s. yang, et al, "from swarm intelligence to metaheuristics: nature-inspired optimization algorithms", computer, vol. 49, pp. 52-59, sept. 2016. [11] s. binitha and ss. sathya, "a survey of bio inspired optimization algorithms", int. j. soft comput. eng., vol. 2, pp. 137-151, may 2012. [12] l. n. de castro, "fundamentals of natural computing", phys. life rev., vol. 4, pp. 1-36, 2007. [13] a. a. el-fergany and h. m. hasanien, "salp swarm optimizer to solve optimal power flow comprising voltage stability analysis", neural comput. appl., vol. 32, pp. 5267-5283, may 2020. [14] e. h. talbi, et al, "solution of economic and environmental power dispatch problem of an electrical power system using bfgs-al algorithm", procedia comput. sci., vol. 170, pp. 857-862, april 2020. [15] k. srilakshmi, et al, "an enhanced most valuable player algorithm based optimal power flow using broyden's method", sustain. energy technol. assess., vol. 42, pp. 100801, sept. 2020. [16] e. mohagheghi, et al, "a survey of real-time optimal power flow ", energies, vol. 11, pp. 3142, nov. 2018. cuckoo search algorithm to solve the problem of economic emission dispatch with facts 587 [17] h. j.touma, "study of the economic dispatch problem on ieee 30-bus system using whale optimization algorithm", int. journal eng. technol. sci., vol. 5, pp. 11-18, june 2016. [18] s. espinosa, d. a. cazco and m. y. salcedo, "economic dispatch hydrothermal system with co2 emissions constraints", ieee latin america trans., vol. 15, pp. 2090-2096, nov. 2017. [19] h. bouchekara, "solution of the optimal power flow problem considering security constraints using an improved chaotic electromagnetic field optimization algorithm", neural comput. appl., vol. 32, pp. 2683-2703, april 2020. [20] z. yang, et al, "optimal power flow in ac dc grids with discrete control devices", ieee trans. power syst., vol. 33, pp. 1461-1472, march 2017. [21] a. f. attia, r. a. el sehiemy and h. m. hasanien, "optimal power flow solution in power systems using a novel sine-cosine algorithm", int. j. electr. power energy syst., vol. 99, pp. 331-343, july 2018. [22] y. tang, k. dvijotham and s. low, "real-time optimal power flow", ieee trans. smart grid, vol. 8, pp. 2963-2973, nov. 2017. [23] o. herbadji, l. slimani and t. bouktir, "optimal power flow with four conflicting objective functions using multiobjective ant lion algorithm: a case study of the algerian electrical network", iran. j. electr. electron. eng., vol. 15, pp. 94-113, march 2019. [24] c. l. chiang, "artificial immune system for economic dispatch problems considering power generators having valve-point loadings", in proceedings of the 7th international conference on control, decision and information technologies (codit), ieee, 2020, pp. 501-504. [25] h. boudjella, et al, "solution of economic load dispatch problems using novel improved harmony search algorithm", int. j. electr. eng. inform., vol. 13, no. 1, pp. 218-241, march 2021. [26] y. yang, et al, "chaos firefly algorithm with self-adaptation mutation mechanism for solving large-scale economic dispatch with valve-point effects and multiple fuel options", ieee access, vol. 6, pp. 4590745922, aug. 2018. [27] c. l. chiang, "an optimal economic dispatch algorithm for large scale power systems with cogeneration units", eur. j. eng. res. sci., vol. 1, pp. 10-16, 2016. [28] l. h. pham, et al, "adaptive cuckoo search algorithm based method for economic load dispatch with multiple fuel options and valve point effect", int. j. hybrid inf. technol., vol. 9, no. 1, pp. 41-50, dec. 2016. [29] i. n. trivedi, et al, "an economic load dispatch and multiple environmental dispatch problem solution with microgrids using interior search algorithm", neural comput. appl., vol. 30, pp. 2173-2189, oct. 2018. [30] p. balachandar, s. ganesan, n. jayakumar and s. subramanian, "economic/environmental dispatch of an interconnected power system considering multiple fuel sources", in proceedings of the international conference on circuit, power and computing technologies (iccpct), ieee, 2017, pp. 1-7. [31] f. jabari, m. shamizadeh and b. mohammadi‐ivatloo, "risk‐constrained day‐ahead economic and environmental dispatch of thermal units using information gap decision theory", int. trans. electr. energy syst., vol. 29, pp. e2704, feb. 2019. [32] f. p. mahdi, et al, "a quantum‐inspired particle swarm optimization approach for environmental/economic power dispatch problem using cubic criterion function", int. trans. electr. energy syst., vol. 28, pp. e2497, march 2018. [33] z. xin-gang, et al, "economic-environmental dispatch of microgrid based on improved quantum particle swarm optimization", energy, vol. 195, pp. 117014, march 2020. [34] m. basu, "economic environmental dispatch using multi-objective differential evolution", appl. soft comput., vol. 11, no. 2, pp. 2845-2853, march 2011. [35] b. gjorgiev and m. čepin, "a multi-objective optimization based solution for the combined economicenvironmental power dispatch problem", eng. appl. artif. intell., vol. 26, no. 1, pp. 417-429, jan. 2013. [36] m. saravanan, et al, "application of particle swarm optimization technique for optimal location of facts devices considering cost of installation and system loadability", electr. power syst. res., vol. 77, pp. 276-283, march 2007. [37] m. saravanan, et al, "application of pso technique for optimal location of facts devices considering system loadability and cost of installation", in proceedings of the international power engineering conference, ieee, 2005, pp. 716-721. [38] p. k. tiwari and y. r. sood, "optimal location of facts devices in power system using genetic algorithm", in proceedings of the world congress on nature & biologically inspired computing (nabic), ieee, pp. 1034-1040, 2009. [39] a. a. alabduljabbar and j. v. milanović, "assessment of techno-economic contribution of facts devices to power system operation", electr. power syst. res., vol. 80, no. 10, pp. 1247-1255, oct. 2010. http://www.ijeei.org/?file=19161264236065fe198308d.pdf&q=download http://www.ijeei.org/?file=19161264236065fe198308d.pdf&q=download 588 l. benyekhlef, s. abdelkader, b. houari, a. a. n. el islam [40] h. r. baghaee, et al, "security/cost-based optimal allocation of multi-type facts devices using multiobjective particle swarm optimization ", simulation, vol. 88, pp. 999-1010, march 2012. [41] m. ćalasan, et al, "optimal allocation of static var compensators in electric power systems", energies, vol. 13, pp. 3219, june 2020. [42] m. lima and s. l. nilsson, technical description of static var compensators (svc): flexible ac transmission systems facts. springer, 2020, chapter 3, pp. 155-206. [43] b. larouci, l. benasla, a. belmadani and m. rahli, "cuckoo search algorithm for solving economic power dispatch problem with consideration of facts devices", sci. bull. series c – electri. eng. comput. sci., vol. 79, pp. 43-54, 2017. [44] x. s. yang, and s. deb, "cuckoo search: recent advances and applications", neural comput. appl., vol. 24, pp. 169-174, jan. 2014. [45] x. s. yang and s. deb, suash, "multiobjective cuckoo search for design optimization". comput. oper. res., vol. 40, pp. 1616-1624, june 2013. [46] x. s. yang and s. deb, "cuckoo search via lévy flights", in proceedings of the world congress on nature & biologically inspired computing (nabic), ieee, 2009, pp. 210-214. [47] x. s. yang and s. deb, "engineering optimisation by cuckoo search", int. j. math. model. numer. optim., vol. 1, pp. 330-343, dec. 2010. [48] x. s. yang, s. deb, m. karamanoglu and x. he, "cuckoo search for business optimization applications", in proceedings of the national conference on computing and communication systems, ieee, 2012, pp. 1-5. [49] r. l. kherfane, et al, "solving economic dispatch problem using hybrid ga-mga", energy procedia, vol. 50, pp. 937-944, 2014. [50] a. n. afandi and h. miyauchi, "a new evolutionary method for solving combined economic and emission dispatch", energy power eng., vol. 5, pp. 774, july 2013. [51] h. boudjella "calcul de la répartition optimale des puissances dans un réseau électrique par les méthodes métaheuristiques", ph.d thesis, university of science and technology of mohammed boudiaf oran usto, algeria, 2021. [52] a. gil, j. segura and n. m. temme, numerical methods for special functions. society for industrial and applied mathematics, 2007. https://www.researchgate.net/publication/220693008 plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 131 140 https://doi.org/10.2298/fuee1801131p memory chips and units radiation tolerance dependence on supply voltage during irradiation and test andrey g. petrov, alexander y. nikiforov, anna b. boruzdina, anastasia v. ulanova, andrey v. yanenko national research nuclear university mephi (moscow engineering physics institute), moscow, russia abstract. in this work we investigate the influence of various memory chips supply voltage on their sensitivity to the radiation environment. the main physical mechanisms responsible for radiation-induced degradation at nominal, increased, and decreased supply voltage values are discussed. it is demonstrated that, depending on supply voltage value during irradiation and subsequent testing, device's tolerance to data corruption effects in memory circuits, single event latch-up (sel) and hard errors induced by ionizing radiation can vary significantly. we also give some recommendations to perform radiation tests. key words: space radiation, memory, digital integrated circuits, flash, sram, seu, total dose 1. introduction the typical variation of allowable supply voltage values for complex digital cmos integrated circuits (microprocessors, microcontrollers, memory chips, etc.) is within 5 to 10 percent of the nominal one. the device in application can work at any supply voltage within this range. according to data from previous works, the total dose hardness and single event sensitivity can vary significantly depending on the operation conditions [1][9]. this fact must be taken into account when assessing radiation tolerance of microcircuits. in this work we concentrated our investigations on radiation tolerance dependence with supply voltage for memory segment of digital ics. memory cells or units are a part of the vast majority of digital ics. in some cases memory is the most critical unit of digital ics due to its sensitivity to radiation [1], [10]-[11]. radiation environment (space, various ground sources, etc.) can have a negative impact on electrical parameters of memory chips received may 4, 2017; received in revised form september 14, 2017 corresponding author: alexander y. nikiforov national research nuclear university mephi (moscow engineering physics institute), kashirskoe shosse 31, moscow 115409, russia (e-mail: aynik@spels.ru) 132 a.g. petrov, a.y. nikiforov, a.b. boruzdina, a.v. ulanova, a.v. yanenko and units, such as supply current, output voltage levels, timing parameters, etc. however, the most negative consequences are associated with radiation effects leading to functional failures, such as corruption of data stored in memory or inability to rewrite data. the radiation tolerance level to these functional and parametric failures can significantly depend on the supply voltage of ics and particularly for memory devices. the radiation behavior of memory devices and units must be taken into account while providing radiation qualification of digital ics. the aim of this work is to demonstrate how the influence of supply voltage applied during irradiation and testing can influence the radiation response of memory microcircuits, and to determine the worst-case supply voltages for various critical microcircuit parameters. we will describe the main mechanisms that determine the dependency of radiation response to supply voltage and work out some recommendations for proper selection of supply voltage during radiation tests of various memory devices and digital ics containing memory units. 2. the influence of supply voltage on total dose hardness of memory integrated circuits previous works have shown that total dose hardness levels of complex multifunctional very large scale integration (vlsi) devices strongly depend on operating conditions during radiation tests [12]-[14]. in this work we consider in more detail total dose tolerance dependence of various memory ics on their supply voltages not only during irradiation but also during functional tests. the amount of radiation-generated carriers escaping initial recombination increases with applied electric field, as shown in figure 1 [15]. the application of supply voltage on the ic during irradiation leads to the presence of a higher electric field in oxides, and induces a higher density of charge trapped in oxides. thus, applying the maximum allowed supply voltage during irradiation is the most critical parameter for the estimation of total dose tolerance of digital ics (in particular memory devices) estimation. fig. 1 experimentally measured fractional hole yield as a function of applied electric field, for a number of incident particles [15] memory chips and units radiation tolerance dependence on supply voltage during irradiation and test 133 at the same time, as will be shown below, applying the maximum supply voltage during functional tests after irradiation is not always critical for memory total dose tolerance estimation. we experimentally compared tid levels when applying minimum, nominal and maximum allowed supply voltages during functional tests of sram microcircuits. these srams were manufactured on various cmos processes, supply voltages vary from 2,7 v to 5,5 v. device irradiation was performed at maximum supply voltage. this experimental comparison (figure 2) shows that applying the minimum allowed supply voltage during functional test (writing and reading test operations) is the most critical mode for sram functional failure total dose level estimations. such behavior is due to the fact that an ic in this mode exhibits the maximum sensitivity to threshold voltage shift and leakage caused by the trapping of the radiation-induced charge in the oxide. fig. 2 total dose hardness dependence on supply voltage applied during functional tests for various srams a different behavior was observed for flash and eeprom memories. we investigated functional failure dependence on supply voltage during test after irradiation for flash memory s29gl064n manufactured on 110 nm cmos process. before irradiation, the test pattern was stored into the memory array. during irradiation the device was kept in storage mode at nominal supply voltage. periodically irradiation was paused and a reading operation was performed on the memory array at minimum, nominal and maximum allowed supply voltages. the first differences between write (stored) and read data were observed for the maximum supply voltage (figure 3). all observed errors were bit upsets from programmed state (charge stored into cell gate, “0” logical level) to erased state (charge removed from cell gate, “1”logical level). thus, it can be argued that bit upsets were caused by the loss of charge stored into the cell during irradiation. when the radiation-induced charge loss is total, stored information is upset from the programmed state to the erased state. when the loss of charge is only partial, it leads to a threshold voltage shift of the flash memory cell, as illustrated by the dashed curves in figure 4. during the reading operation of the memory, the voltage on cells gate has the same value as the supply voltage. therefore, as illustrated in figure 4, applying the maximum supply voltage during irradiation and test will be the most critical for total dose tolerance estimation. 134 a.g. petrov, a.y. nikiforov, a.b. boruzdina, a.v. ulanova, a.v. yanenko fig. 3 number of flash memory read error bits vs total dose level for various supply voltage applied during test fig. 4 drain current vs gate voltage for programmed (“0”) and erased (“1”) cell states and cell with some charge (dotted curve) 3. the influence of supply voltage on single event sensitivity of digital integrated circuits two main single event effects in digital ics are single event latchup (sel) and single event upsets (seu) in memory units, control and data registers. single event upsets in registers can cause single event functional interrupt (sefi). we provide estimation of seu sensitivity dependence on supply voltage for different types of memory devices and units. 3.1. seu sensitivity dependence on supply voltage for sram memory. in a memory cell, the area sensitive to single event upsets is the drain of off-state transistors in [16]-[21]. according to [21], the critical charge for sram cell upset depends on static noise margin of the device and can be estimated as: c ox snmq c v (1) where cox  the capacitance of gate oxide, vsnm is the static noise margin of memory cell. static noise margin decreases with supply voltage. therefore, the sensitivity of sram memory ics and units to single event upsets increases with the decrease in supply voltage. such behavior was observed for xc7z020 configuration memory, as shown in the results presented below. memory chips and units radiation tolerance dependence on supply voltage during irradiation and test 135 however, the critical charge for cell upset does not always show a linear dependence on supply voltage level. for this reason, experimental results obtained for one supply voltage cannot be extrapolated to another level without experimental estimation [22]. investigation of single event upsets in sram due to neutrons [23] shows that simple cross section estimation based on critical charge in some cases can give underestimated results. the results of investigation on the xc7z020 configuration memory are shown in figure 5, where the seu cross section increases with the decrease in supply voltage during test. for this type of memory, applying the minimum supply voltage during irradiation is the most critical mode for seu. fig. 5 seu cross section dependences vs supply voltage during test and temperature for 120 mev protons irradiation (cm 2 /bit), (mevcm 2 /mg) at the same time seu investigation results for cmos 0,25 m sram 512к×8 (figure 6) and xc5vlx50 block and configuration memory (figure 7) show no significant difference in seu cross section at different supply voltages during irradiation. however, it should be noted that a difference in sensitivity of sram at different voltages can be observed in the let threshold region of the effect. experimental data for linear energy transfer (let) values in near-threshold have not been obtained in this case. fig. 6 cmos 0,25 um sram 512к×8. seu cross section vs heavy ion let for various supply voltages applied during irradiation 136 a.g. petrov, a.y. nikiforov, a.b. boruzdina, a.v. ulanova, a.v. yanenko fig. 7 amount of seus in block and configuration memory vs pulsed laser energy for various supply voltages 3.2. seu sensitivity dependence on supply voltage for charge storage memory. another dependence of the sensitivity to seus is observed for charge storage memories (flash, eeprom). we provide data on the irradiation of flash memory s29gl064n manufactured on 110 nm cmos process by ne ions with an let near 7 mev·cm2/mg at various supply voltages. after irradiation, information stored was read from the array at minimum, nominal and maximum allowed supply voltages for this device (figure 8) and compared with the data written before irradiation. as shown by the experimental results in figure 8, the device cross section does not depend on supply voltage during irradiation. at the same time, an increase in seu cross section with supply voltage during test after irradiation has been observed. seus in this flash memory result from partial charge loss stored in memory cell [24] and increase in cross section with supply voltage can be explained similarly to total dose. in this case the maximum supply voltage during test will be the most critical mode for seu sensitivity estimation. fig. 8 seu cross section vs supply voltage during test and irradiation ne ions at normal incidence for s29gl064n memory chips and units radiation tolerance dependence on supply voltage during irradiation and test 137 3.3. sel sensitivity dependence on supply voltage for digital ics. memory ics and units have no difference in single event latchup mechanisms and sensitivity dependence on supply voltage in comparison with other digital ics. our experimental results obtained for cmos sram memories cy62256 (figure 9) and 90nm cmos sram 1mx8 (figure 10) show that the worst-case for sel sensitivity is to apply the maximum supply voltage during irradiation. fig. 9 cy62256. sel cross section (sel) vs heavy ions let for different supply voltages fig. 10 90nm cmos sram 1mx8. sel cross section(sel) vs heavy ions let for different supply voltages there is no influence of ics scaling on the parameters of the parasitic thyristor structure at the origin of the sel mechanism. switch-on current does not vary significantly for cmos processes with design rules from 180 nm to 65 nm. operating temperature and supply voltage mainly affect ics sel sensitivity [25]. sensitivity to sel decreases with supply voltage, which is explained by a decrease in the gain of the parasitic bipolar transistor and a decrease in the collected charge with a lower electric 138 a.g. petrov, a.y. nikiforov, a.b. boruzdina, a.v. ulanova, a.v. yanenko field strength [26].the influence of the supply voltage is mainly manifested near the sel threshold let. it can be clearly seen from our experimental results presented above in figures 9 and 10. the sel saturation cross section is almost unchanged with supply voltage, while the sel threshold let varies significantly. in addition, a higher supply voltage can be more likely to exceed the sel holding voltage, which increases the probability of maintaining sel condition. results presented in work [26] show a sharp increase in sensitivity to sel at supply voltages greater than 1.5 v (figure 11). therefore the maximum supply voltage is the most critical mode for sel sensitivity estimations. fig. 11 dependence of the sel threshold let on the supply voltage for various design rules 4. recommendations on selection of supply voltage for different types of memory integrated circuits and units during radiation tests when performing radiation qualification of ics, it is necessary to correctly select the worst-case supply voltage to give conservative estimations of radiation hardness level. incorrect selection of supply voltage can lead to overestimation of radiation hardness level. it is important to take into account that the worst-case supply voltage to use during test and during irradiation may be different. based on the results of the investigation and their analysis presented above, we can give recommendations for an appropriate selection of the worst-case supply voltage during certification of memory ics and units. these recommendations are presented in table 1. table 1 worst-case supply voltages during ics radiation certification type of memory total dose single events during irradiation during test sel seu during irradiation during test sram maximum minimum maximum minimum any charge storage memory maximum minimum and maximum maximum any minimum and maximum memory chips and units radiation tolerance dependence on supply voltage during irradiation and test 139 5. conclusion in this work we have shown significant influence of memory ics and units supply voltage on their sensitivity to total dose and single event upsets. we identified the worstcase supply voltage for total dose and single event upsets memory ics sensitivity during irradiation and test, and we have shown that they can be different in some cases. consequently, recommendations are also provided to properly select the supply voltage to use during memory ics and units radiation qualification. references [1] p. nekrasov, a. demidov, o. kalashnikov, “functional checks of microprocessors during radiation tests”, instruments and experimental techniques, vol. 52, no. 2, pp. 196-199, 2009. [2] o. kalashnikov, a. demidov, v. figurov, a. nikiforov, s. polevich, v. telets, s. maljudin, a. artamonov “integrating analog-to-digital converter radiation hardness test technique and results”, ieee transactions on nuclear science, 1998, vol. 45, no. 6 (1), pp. 2611-2615, 1998. [3] a. boruzdina, a. ulanova, n. grigor'ev, a. nikiforov, “radiation-induced degradation in the dynamic parameters of memory chips”, russian microelectronics, vol. 41, no. 4, pp. 259-265, 2002. [4] o. kalashnikov, “statistical variations of integrated circuits radiation hardness”, in proceedings of the radecs conference, 2011, pp. 661-665. [5] o. kalashnikov, “cmos integrated circuits total dose functional upset sensitivity to operation mode”, in proceedings of the 4th workshop on electronics for lhc experiments, 1998, rome, italy, pp. 484-485. [6] a. kirgizova, a. nikiforov, n. grigor'ev, i. poljakov, p. skorobogatov, “dominant mechanisms of transient-radiation upset in cmos ram vlsi circuits realized in sos technology”, russian microelectronics, vol. 35, no. 3, pp. 162-176, 2006. [7] a. karakozov, o. korneev, p. nekrasov, p. nekrasov, m. sokolov, d. zagryadsky, “bias conditions and functional test procedure influence on powerpc7448 microprocessor tid tolerance”, in proceedings of the radecs conference, 2013. pp. 1-2. [8] d. bobrovsky, o. kalashnikov, p. nekrasov, “functional control technique for fpga total ionizing dose testing”, in proceedings of the radecs conference, 2012. [9] o. kalashnikov, a. artamonov, a. demidov, “adc/dac radiation test technique”, workshop record 4th european conf. "radiations and their effects on devices and systems" in proceedings of the radecs conference, palm beach-cannes, france, 1997, pp. 56-60. [10] v.a. marfin, p.v. nekrasov, and i.o. loskutov, “connection of the parametric and functional control for tid testing of complex vlsi circuit,” in proceedings of the 14th european conf. on radiation and its effects on components and systems, radecs-2015, moscow; russian federation; sept. 14 -18, 2015, article number 7365664. [11] i.o. loskutov, a.b. karakozov, p.v. nekrasov, and a.y. nikiforov, “automated radiation test setup for functional and parametrical control of 8-bit microcontrollers,” in proceedings of the 2015 international siberian conference on control and communications, sibcon 2015 omsk; russian federation; may 21 -23, 2015, article number 7147128. [12] o.a. kalashnikov, and a.y. nikiforov, “tid behavior of complex multifunctional vlsi devices,” in proceedings of the 29th international conference on microelectronics, miel 2014, belgrade, serbia, may 2014, pp. 455-458. [13] d. boychenko, o. kalashnikov, a. nikiforov, a. ulanova, d. bobrovsky, p. nekrasov, “total ionizing dose effects and radiation testing of complex multifunctional vlsi devices”, facta universitatis, series: electronics and energetics, vol. 28, issue 1, pp. 153-164, 2015. [14] a. sogoyan, a. artamonov, a. nikiforov, d. boychenko, “method for integrated circuits total ionizing dose hardness testing based on combined gammaand x-ray irradiation facilities”, facta universitatis, series: electronics and energetics, vol. 27, issue 3, pp. 329-338, 2014. [15] t.r. oldham and f.b. mclean, “total ionizing dose effects in mos oxides and devices”, ieee transaction on nuclear science, vol. 50, no. 3, pp. 483-499, june 2003. [16] a.i. chumakov, a.l. vasil'ev, a.a. kozlov, d.o. kol'tov, a.v. krinitskii, a.a. pechenkin, a.s. tararaksin, and a.v. yanenko, “single-event-effect prediction for ics in a space environment,” russian microelectronics, vol. 39, no. 2, pp. 74-78, 2010. 140 a.g. petrov, a.y. nikiforov, a.b. boruzdina, a.v. ulanova, a.v. yanenko [17] a. i. chumakov, a. a. pechenkin, d. v. savchenkov, a. s. tararaksin, a. l. vasil'ev, and a. v. yanenko, “local laser irradiation technique for see testing of ics”, in proceedings of the 12th european conf. on radiation and its effects on components and systems, radecs-2011, sevilla; spain; sept. 19 -23, 2011, pp. 449-453. [18] a.i. chumakov, “evaluation of multibit upsets in integrated circuits under heavy charged particles,” russian microelectronics, vol. 43, no. 2, 2014, pp. 91-95. [19] a.b. boruzdina, a.v. ulanova, a.g. petrov, v.a. telets, p. reviriego and j.a. maestro, “verification of sram mcus calculation technique for experiment time optimization,” in proceedings of the 14th european conf. on radiation and its effects on components and systems, radecs-2013, oxford; united kingdom; sept. 23 -27, article number 6937393. [20] d.v. savchenkov, a.i. chumakov, a.g. petrov, a.a. pechenkin, a.n. egorov, o.b. mavritskii, and a.v. yanenko, “study of sel and seu in sram using different laser techniques” in proceedings of the 14th european conf. on radiation and its effects on components and systems, radecs-2013, oxford; united kingdom; sept. 23 -27, article number 6937411. [21] z. zhang, j liu, y. sun, m. hou, t. tong, s. gu, t. liu, "supply voltage dependence of single event upset sensitivity in diverse sram devices," in proceedings of the 10th international conference on reliability, maintainability and safety (icrms), guangzhou, 2014, pp. 114-119. [22] j. barak, j. levinson, a. akkerman, e. adler, a. zentner; d. david, y. lifshitz, m. hass, b.e. fischer, m. schlogl, m. victoria, w. hajdas, “scaling of seu mapping and cross section, and proton induced seu at reduced supply voltage,” ieee transactions on nuclear science, vol. 46, no.6, pp. 1342-1353, dec. 1999. [23] p. hazucha, k. johansson, c. svensson, “neutron induced soft errors in cmos memories under reduced bias,” ieee transactions on nuclear science, vol.45, no.6, pp.2921-2928, dec 1998. [24] a.g. petrov, a.l. vasil'ev, a.v. ulanova, a.i. chumakov, and a.y. nikiforov, “flash memory cells data loss caused by total ionizing dose and heavy ions,” central european journal of physics, vol. 12, no. 10, pp. 725-729, 2014. [25] g. boselli, v. reddy and c. duvvury, "latch-up in 65nm cmos technology: a scaling perspective," in proceedings of the ieee international reliability physics symposium (irps2005), 2005, pp. 137-144. [26] r. koga, s.j. hansel, w.r. crain, k.b. crawford, s.d. pinkerton, and j. quan, “single event upset and latchup considerations for cmos devices operated at 3.3 volts”, aerospace report no. tr-94(4940)-9, 1995. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 307 307 https://doi.org/10.2298/fuee2601307e © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd corrigendum pv-based rapid charging and battery swapping station for small transport evs in rural areas of west bengal. bidrohi bhattacharjee, shibabrata mukherjee, rupanjali bhattacharjee, subha bhattacharya, ankur ganguly, arabinda das. facta universitatis, series: electronics and energetics (fu elec energ), vol. 38, no 3, september 2025, pp. 469-485. doi: https://doi.org/10.2298/fuee2503469b the pdf and printed version of article pv-based rapid charging and battery swapping station for small transport evs in rural areas of west bengal bidrohi bhattacharjee, shibabrata mukherjee, rupanjali bhattacharjee, subha bhattacharya, ankur ganguly, arabinda das facta universitatis, series: electronics and energetics, vol. 38, no 3, september 2025, pp. 469-485, contain an incorrect doi: https://doi.org/10.2298/fuee2503457b correct doi is: https://doi.org/10.2298/fuee2503469b link to the corrected article: https://doi.org/10.2298/fuee2503469b received december 21, 2025 https://doi.org/10.2298/fuee2503469b facta universitatis series: electronics and energetics vol. 33, no 4, december 2020, pp. 669-686 https://doi.org/10.2298/fuee2004669d © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd a review of real time smart systems developed at university of niš  danijel danković, miloš đorđević faculty of electronic engineering, university of niš, serbia abstract. this paper presents the bibliographic review of smart systems implemented so far and their application. also this paper is dedicated to new smart mobile system developed for monitoring microclimatic parameters. this system is primarily intended for monitoring real-time microclimatic parameters, such as air quality where the presence of carbon monoxide (co) is monitored, as well as other microclimatic parameters. the mobile system which will be described in this manuscript can be installed in public transport (to obtain information on microclimatic parameters on a known route). also, to obtain information on microclimatic parameters from a random route, it is possible to install the system in a taxi vehicle. this system provides the ability to generate a map using the data provided by the system based on gps coordinates. the system is based on a group of embedded sensors, gps module, pic microcontroller as a core and server system, and wireless internet using global system for mobile telecommunications (gsm) module with general packet radio service (gprs) as a communication protocol. key words: smart mobile system, internet of things, pic microcontroller, sensor technology 1. introduction with the increase in the number of vehicles, but also with the reduction of green areas in cities, for the needs of the construction of residential buildings, as well as parking spaces, the harmful impact on microclimatic parameters has increased significantly. today, the urban population makes up almost half of the world's population. it is estimated that a city of one million citizens produces about 25,000 tons of co2 and co and about 300,000 tons of water waste every day [1]. these parameters are progressively increasing every year thanks to urbanization, which reduces the quality of life of people more and more. in order to monitor the parameters that greatly affect the air quality and other microclimatic parameters, it is necessary to have a large number of points where these parameters are monitored. knowing  received july 17, 2020; received in revised form august 30, 2020 corresponding author: danijel danković faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia e-mail: danijel.dankovic@elfak.ni.ac.rs 670 d. dankovic, m. djordjevic in which parts of the city the greatest pollution is, it is possible to report certain corrective measures, such as traffic regulation, use of pollutant filters, change of heating fuel type (transition of heating plants to natural gas and renewable energy sources). the systems used to monitor microclimatic parameters require large amounts of money (installation costs, regular maintenance and servicing needs), which on the other hand means that a small number of cities decide for this solution. to avoid this, it is necessary to implement a smart autonomous mobile system that can replace a large number of systems that are installed at measuring points. in order to have an insight into the position where the parameters were measured, it is necessary to use the gps module, to obtain location information. based on this, it is possible to locate where the air pollution is higher, as well as in what period of the day, month, even during the year. the advantage of such systems is reflected in the fact that a higher frequency of measuring points is possible, which makes the entire system for monitoring and measuring microclimatic parameters cheaper. the manuscript aims is to develop a smart mobile system for real time monitoring microclimatic parameters, such as air quality where the presence of carbon monoxide (co) is monitored, as well as other microclimatic parameters (various sensors can be added, which can change the set of microclimatic parameters which are monitored). such a system can be part of smart cities, since it is an autonomous system for monitoring environmental parameters. the advantage of such system compared to conventional static systems is that such a system can be installed on vehicles (public transport, police, taxis, etc.), which means that the coverage of the area monitored is almost unlimited. if it is desired to monitor the established route, public transport can be used, while in case of need of a random route, taxi vehicles could be used. for example, in the city of nis, one taxi vehicle crosses a route averaging about 400 km in 24 hours, making about 70 individual rides. in addition to monitoring microclimatic parameters, it is possible to generate a map using the data provided by the system, based on gps coordinates. the system has a wide application based on meteorological/microclimatics parameters that measure: temperature, humidity, atmospheric pressure, altitude, lighting, and detection and measurement of carbon monoxide (co). all measurements are accompanied by information on the time and date of measurement, also with gps coordinates, which are used so that each measurement is supported by the location where the parameter measurement was performed. gps coordinates, time and date information are present during the storage of data on the server and are available when downloading the results. after that, the collected data on the measured parameters can be added to the map. in connection with the previous, for the purposes of system testing various measurements were performed in nis. testing was performed in parts of the city where there are no measuring points (global monitoring), i.e. parts of the city that are not covered by measuring points for global monitoring. based on the data of the site for monitoring and supervising information on air quality "air pollution in serbia: real-time air quality index visual map", [2], there are 5 measuring points in nis where air quality parameters are monitored. for a global view of the situation in terms of air quality, these points represent a sufficient number of points, but to look at the situation in specific parts of the city, it is necessary to have a significantly higher number of points. also, the highest frequency of residential buildings, as well as people and cars are in the central parts of the cities, it is necessary to set up as many measuring points as possible in these parts of the cities. it is important to note, a review of real time smart systems developed at university of niš 671 several other factors that additionally affect the air quality should be taken into account, and they are more often located outside the central parts of the city. some of the factors that negatively affect are the type of building (whether it is a residential building or a building for other purposes), the type of fuel used for heating (whether it is fossil fuels, natural gas, electricity, etc.), and then which is a type of public city transport (buses, trolleybuses, metro, etc.) and perhaps the most influential factor is the existence of the heavy industry. there are a large number of modular systems for measuring and acquiring atmospheric parameters on the market, but there are few such comprehensive systems that combine all modules for measuring/observing both microclimatic and atmospheric parameters and that such a system is also mobile. for example, it can find a system that measures only one parameter, wind speed [3]. that anemometer is a part of the meteorological station project. it is important to note that different systems are developed at university of niš. the smart systems such as meteorological stations, smart farms, and smart systems within smart faculty are data collection systems that can remotely collect information based on meteorological/ambient (microclimatic) parameters. in addition to storing the collected data in the cloud or database on a web server and on the basis of the collected data, the system, depending on the purpose, takes certain actions that are expected of it [4]. some of the mentioned systems are implemented and they are described in more detail in section 2. it should be emphasized that in this paper there is a double goal, the first is related to the bibliographic review of smart systems implemented so far and their application, as well as the advantages they offer in relation to systems described and published in reference journals. the second goal of the paper is dedicated to a smart mobile system for monitoring microclimatic parameters, which is described in detail in section 3. 2. theoretical background with a review of authors’ previous investigation there are many different implementations of smart autonomous systems for monitoring microclimatic parameters, which can be divided according to the communication technologies they use, as well as storage media. most implementations use wireless technologies to communicate between the sensor part and the main unit. a smart system after monitoring and measuring parameters, stores measured data so that the end-user can easily access them, access measurement results from anywhere, and also using stored data according to his needs. based on these needs, smart autonomous systems have been developed based on different technologies. so it could stand out four groups of smart systems based on: 1. custom microcontroller and mobile application (bluetooth for communication). 2. custom microcontroller and computer (radio frequency (rf) for communication). 3. nodemcu running esp8266 wi-fi module and cloud or database on the webserver (wi-fi internet for communication). 4. custom microcontroller and cloud or database on the webserver (global system for mobile telecommunications (gsm module) for communication). 672 d. dankovic, m. djordjevic it is very important to mention some implementations of smart autonomous systems for monitoring microclimatic parameters. in the manuscript [1], the authors described a mobile system that can measure nitrogen dioxide no2 and carbon monoxide co. the system described by the authors is equipped with a gps module, in order to obtain information on the measurement location of microclimatic parameters. as the authors stated, the system that was implemented was tested, but the measurement intervals were not the same, so that the results obtained were not measured in real time. this shortcoming affects users a lot, especially who need real-time parameter information. therefore, our primary task was to develop the system that has the ability to monitor microclimatic parameters in real time, as well as information on the location of measurements. also, our system enables the measurement of more microclimatic parameters than the system described in the manuscript [1]. in the following manuscript [4], the authors described a mechatronic system for measuring environmental parameters. the system is based on the arduino due development board with atmega 328 microcontroller. the sensor part of this system consists of temperature and humidity sensor sht1x, which is much more unreliable compared to the sensor used in the implementation of our system. in addition, four ds1820 temperature sensors were used, whose measuring range is smaller compared to the digital sensor used in our system. also, four bpw 34 photodiode light sensors that are not reliable enough compared to the digital sensor we used. finally, they used a noise sensor consisting of a capacitive microphone czn-15e and an mcp 601 i/p. the system is static, which means that it is necessary to use more such systems to measure microclimatic parameters, which further increases the cost of the system itself. the next manuscript [5] presented a device developed by the authors for monitoring and controlling microclimatic parameters within a livestock barn. the realized system is of static type, which monitors and controls parameters such as temperature, air humidity, ammonia concentration and carbon dioxide. the sensor nodes are interconnected by rf communication using the zigbee module, which allows a relatively short range in sending or receiving data. in this regard, such system is limited to a narrow application, that is, for monitoring microclimatic parameters in a small area. in addition, it is important to note that the authors do not specify which sensors were used for the realization of the system, based on which there is no specific information on the ranges of measurement of microclimatic parameters. in addition, it is stated in the manuscript that the system was tested within a few hours, unlike the system we implemented, where the testing period lasted at least 7 days. finally, to our knowledge, there are no available mobile systems, comprehensive as this one described in the manuscript, which is the main motive of this manuscript. furthermore, the systems we implemented earlier did not allow the measurement of microclimatic parameters at different locations, since they are static systems. our implemented systems are described in more detail in our previous papers [5, 6, 7, 8] published in relevant journals, and at international conferences. the graphical illustration of realized systems is shown in fig. 1. a review of real time smart systems developed at university of niš 673 fig. 1 block diagram with an overview of realized smart systems and proposed smart mobile system. in our previous research [6], a real-time smart meteorological station based on embedded sensors and iot technology was analyzed (as shown in fig. 2). the described meteorological station was based on two main parts, the first was a pic microcontroller which represented the central part of the measuring system together with the built-in sensors. the second part was related to the thingspeak internet of things platform for storing data using gsm/gprs communication modules. the microcontroller used to implement this system belongs to the microchip family of pic microcontrollers. in addition to microcontrollers, sensors were used to monitor and measure meteorological and ambient parameters such as temperature, humidity, atmospheric pressure, altitude, wind speed, light intensity, and detection and measurement of natural gas concentration (lpg). in fig. 2, it can be seen the measured results for temperature (for more detailed information about other measured parameters in [6]). based on a wide range of meteorological and ambient parameters, the implemented system was used not only in meteorological stations, botanical gardens, libraries, and hospitals but also in mines, since the system measured the concentration of lpg, could detect and measure the presence of methane ch4. in addition to the listed 674 d. dankovic, m. djordjevic parameters that can be monitored and measured, there is a possibility to determine the period between two measurements, as well as how long the measurement of parameters lasts since the implemented system has an rtc module that monitors and calculates the current time. the disadvantage of this system is that it is a static system, unlike the mobile system which will be described in chapter 3 of this manuscript. also, a less reliable sensor was used to detect and measure the concentration of natural gas (lpg), and carbon monoxide co, in contrast to the sensor used in the implementation of the system described in chapter 3. fig. 2 block scheme of the smart weather station. block scheme is based on [6]. the measured results for temperature are given as an example. our next research [7] is related to the application of iot technology and smart systems in the industry, more precisely to the implementation of iiot technology (as shown in fig. 3). the described real-time system is based on power line poles monitoring to avoid an unwanted drop of the power pole, which would cause an interruption in the power supply, fall of the power line pole on a car passing by (provided that the pole is next to the road), injury of people due to the fall of the power pole, and also not leading to an accident. to avoid this undesirable scenario, the slope of each pole was monitored using an accelerometer, to know which of the poles could cause problems. each of the poles has its unique id based on which it is possible to track the slope of each pole independently. in addition to the accelerometer, parameters such as temperature, humidity, and atmospheric pressure were monitored, so that the people in charge of maintaining the flagpole had an insight into the atmospheric conditions that await them in the field. the system consisted of three separate parts, which were divided hierarchically, starting with the part with the least intelligence (level 1), through level 2 which represented the connection between the flagpole and the cloud server and the control room (level 3). in fig. 3, it can be seen the measured results for a review of real time smart systems developed at university of niš 675 the slope of angle (more detailed information about other measured parameters can be found in [7]). the first level consisted of a microcontroller of the pic family that monitored and measured the parameters (angle of inclination, temperature, humidity, and atmospheric pressure) and depending on the inclination of the flagpole sent information to level 2 according to a defined measurement period. the data was sent using rf modules, to make the system as cheap as possible for implementation. level 2 was served by a pic microcontroller that received information about each pole based on its module based on the rf module and sent that data to the cloud or database using the gsm/gprs module since level 2 was located in the open. level 3 was a database or cloud server, along with a control room from which it was possible to access measurement data and from where messages could be sent to teams about which flag was critical. fig. 3 block scheme of the smart system for supervision and monitoring of the power line poles using iiot technology. block scheme is based on [7]. the measured results for slope of angle are given as an example. as part of the research [8], we have implemented a system related to smart agriculture, which allows monitoring and control of the greenhouse and the most important parameters of microclimatic conditions in it (as shown in fig. 4). based on these parameters, it is possible to improve the quality and quantity of yield in the greenhouse. besides, the system monitored and controlled the greenhouse irrigation system, so that the necessary fertilizer was delivered to the plants at an adequate time. the system was based on monitoring and 676 d. dankovic, m. djordjevic control of greenhouses in three levels, as follows, level 1 was the control of ventilation (air conditioner and door), safety net, level 2 was the control of irrigation (water temperature, water level in the tank), and also and the amount of feed to be added to the tank. level 3 is the most complex part of the entire system and was reflected in the fact that parameters such as greenhouse air temperature, soil temperature, air humidity, soil moisture, atmospheric pressure, soil ph, wind speed (to protect the greenhouse structure), light intensity and amount of carbon dioxide (co2) were monitored and controlled. in fig. 4, it can be seen the measured results for air humidity and soil moisture (more detailed information about other measured parameters can be found in [8]). the entire system is powered by using a pic microcontroller that sends data to a database or cloud using a gsm/gprs module. for the needs of the system, an application for smartphones was realized, so that the monitoring and control of the greenhouse could be done remotely. fig. 4 block scheme of the smart autonomous agricultural system for improving yields in greenhouse based on sensor and iot. block scheme is based on [8]. the measured results for air humidity and soil moisture are given as an example. as part of the smart faculty within the research [9], we have implemented a system for monitoring and control of microclimatic parameters at the faculty, more precisely in amphitheaters and classrooms, to provide better working conditions, i.e. teaching. the system (as shown in fig. 5) was based on monitoring and control of microclimatic parameters such as temperature, humidity, atmospheric pressure, light intensity, carbon dioxide (co2) concentration. the entire system is realized in the form of control nodes, where each of the ambient parameters is controlled by air conditioner and ventilation (temperature and humidity in amphitheaters/classrooms), adjustment of blinds/venetian blinds (lighting intensity in amphitheaters/classrooms). the system we have implemented is a review of real time smart systems developed at university of niš 677 part of a smart faculty, which, based on a known number of students who have classes in one of the amphitheaters or classrooms, could set adequate conditions for the best possible student work. this system is completely designed in the altium designer software tool for designing printed circuit boards [10], a 3d model was made and realized as shown in [9]. as in previous systems, the central component is the microcontroller of the pic family. in fig. 5, it can be seen the measured results for temperature and relative humidity (more detailed information about other measured parameters can be found in [9]). a gsm/gprs module was used to send the measured data to the database on the server. for the needs of the realization of the system, an application for smartphones was realized, to monitor and control remotely. all research [6, 7, 8, 9] is related to smart systems that can monitor and measure meteorological, ambient and microclimatic parameters in real time, with the disadvantage of static systems, i.e. systems that are not mobile and do not have the ability to measure parameters at multiple locations. fig. 5 block scheme of the smart data logger system based on sensor and internet of things technology as part of the smart faculty. block scheme is based on [9]. the measured results for temperature and relative humidity are given as an example. 678 d. dankovic, m. djordjevic 3. development of smart mobile system this manuscript presents the model of smart mobile data logger for real time monitoring microclimate parameters based on pic microcontroller and cloud platform. the smart system is designed to be mobile, scalable and easy to setup and extend. it is based on powerful pic microcontroller which manages the whole system. it includes embedded sensors for observing and measuring of the microclimatic parameters, gps coordinates for information about location where the measurement were made and gprs module which upload data to cloud platform. 3.1. design of solution a smart mobile data logger system for real-time monitoring is realized so that is consists of 7 segments, shown in fig. 6. the power supply serves all other blocks. the microcontroller pic18f45k22 [11], which represents the core of the entire system, manages the microclimatic sensor block, which serves for microclimatic measurements and observations and gps coordinates for location information. also, the gsm/gprs block, realized using the sim800l module [12], is controlled by the above microcontroller. fig. 6 block scheme of the smart real time mobile microclimatic monitoring system based on sensor and iot technology. a review of real time smart systems developed at university of niš 679 the sensor list is shown in table 1: table 1 sensors and their measurement characteristics sensor measurement measurement range ref. bme280 temperature, air humidity, atmospheric pressure, altitude temperature:-40°c to +85°c, air humidity: 0% to 100%, atmospheric pressure: 300 to 1100 mbar [13] bh1750 light intensity 0 lx to 65535 lx [14] mq-7 carbon monoxide 20 ppm to 2000 ppm [15] communication between microcontroller pic18f45k22 and sensors bme280 and bh1750 is realized via the i2c bus. also, there is a global positioning system (gps) module neo6mv2 [16], which are used to obtain information on the location where the observation and measurement of microclimatic parameters was performed. the information of interest for this smart mobile system is geographic longitude and latitude in the format (xx.xxxx (n), yy.yyyy (e)). this module communicates with microcontroller using uart serial communication. the real time clock (rtc) module ds1307 [17], was used to set the current time and determine the measurement step. finally, the gsm/gprs module sim800l serves to send measured data and location information to the cloud (thingspeak [18]) realized on the matlab webserver. this module communicates with the microcontroller via the (rx/tx) uart serial communication such as gps module neo6mv2, using at commands. to interact with the user while working with the smart mobile data logger system, a 420 character lcd is used [19]. the lcd display serves to monitor the current measurement results and the time for the next measurement. at the start, it is necessary for the user to set the ip address in the form of an sms message, so that later the gsm/gprs module has information on where to send the measured data. when the ip address is set, uart serial communication, i2c bus and a/d converter setup begins. finally, the sensors and module are initialized, after which the measurement and sending of data to the cloud begins. 3.2. software design of smart system each thread during the work of the smart data logger system is defined as the algorithmic mode of displaying the software as shown in fig. 7. this algorithm is based on our previous systems [6, 9]. but, the previous systems used security digital (sd) memory card. it was used as a backup medium for data storage in case there is no internet access, in order not to create a "hole" in the measurement interval, ie in order not to lose information about the measured parameters. another difference is that the gps module is present in this algorithm, as well as part of the algorithm for its configuration. 680 d. dankovic, m. djordjevic fig. 7 basic algorithm of the embedded software of smart mobile monitoring system a review of real time smart systems developed at university of niš 681 4. experimental results the microclimatic parameters were measured with a prototype of a smart mobile data logger system in the city of niš, in order to confirm its validity. all the measured results are shown in fig. 8. however, by driving a vehicle it is provided a large amount of data for a certain area, so it is not that obvious to analyze data. for these reasons, we can divide the city into cells (larger or smaller, depending on the need) and assign only the most recent data we have measured in each cell. fig. 8 generated map based on the obtained results measured by the realized system on the example of temperature measurement, we can see that the vehicle is transferred from cell to cell (marked with numbers 1 to 5), as illustrated in fig. 9. it may happen that in the same cell in one pass we have a larger number of measurements, but for better visibility, only the results of the last measurement are shown, as illustrated in fig. 10. the points t1, t2, t3, and t4 (the last measured points in each of the specific cells), in fig. 10, coincide with the measured points shown in fig. 9. the vertical lines on the chart shown in fig. 9 show the moments when the vehicle left a certain cell, i.e. entered the next one. therefore, all points measured in one cell can be seen. when multiple systems are installed on different vehicles, the last measured data from all vehicles in that cell will be recorded in the cell. the route taken by the vehicle will not be shown, it is shown here only for the purpose of a detailed description of the operation of the system. 682 d. dankovic, m. djordjevic fig. 9 measured temperature data with marked points that were last measured in specific cells fig. 10 generated map based on the latest results measured by the realized system in specific cells (vehicle direction is also shown) the functionality of this system is shown on the example of temperature measurement. however, other parameters were also measured as shown in fig. 11. microclimatic parameters were measured on june, 26 th (friday), 2020 in niš. measurements were performed during the working day when the frequency of vehicles is significantly pronounced. a review of real time smart systems developed at university of niš 683 fig. 11 measured parameters using the realized system (temperature and co concentration (field 1 and field 2) – first two charts, air pressure and air humidity (field 3 and field 4) – second two charts, light intensity and gps coordinates (field 5 and field 6) – third two charts) the results we recorded during the testing can be used by experts from various fields such as tourism and catering, traffic, meteorological stations, as well as experts dealing with air and environmental pollution. based on the provided results, people from the above areas can have an insight into more detailed information that is extremely important to them for their activities, as well as for taking certain actions in accordance with the obtained results. as our system also provides information on the location (gps coordinates) where the measurements were performed (coordinates are shown in field 6 for each measurement separately), it is possible to monitor the microclimatic parameters in each area in much more detail, even where there are no measuring points that monitor the level of air pollution globally (fig. 12). 684 d. dankovic, m. djordjevic fig. 12 real time air quality measurement places [2] based on the site with monitoring of the air pollution index [2] in nis, it can be seen that a small part of the city has the possibility of monitoring. there is a problem with updating the data on this site, as the data is updated in a few hours (usually 2 to 3 hours). most of the city with significant traffic is not covered by systems for monitoring microclimatic parameters. our smart mobile system for real-time monitoring enables the coverage of a large percentage of the city area, and along the way, it is possible for the system to be used within the city transport, taxi vehicles, which reduces the cost of installing a large number of systems since one system is enough to cover the entire city. as stated in the manuscript, the realized system, considering that it is modular, offers the possibility of using other sensors, ie monitoring and other microclimatic parameters, depending on the needs of the user. 5. discussion and future work the systems we have implemented so far find application within large smart systems such as smart colleges, where they represent one segment within the whole complex system. in addition, the system has found application in agriculture, and also a smart meteorological station is used not only within meteorological stations, but also in mines (since it has sensors that monitor microclimatic parameters that are vital not only for the mine, but also for the miners in it). this manuscript describes the smart mobile system for monitoring microclimatic parameters, which can replace a large number of static systems. the static systems that we realized were divided according to the spheres in which they found the primary application (represented by the block diagram in fig. 1). each system presented within the block diagram is realized completely, in other words, from idea to realization. first, the functionality of each system was confirmed separately within the laboratory, and after that in real working conditions (by realizing a prototype on the protoboard). when the testing of the prototype proved its functionality, a printed circuit board was designed using the altium designer software tool. after that, when the systems are completely physically realized, they are tested a review of real time smart systems developed at university of niš 685 in real conditions within the prescribed 7 days needed to confirm the functionality of the systems themselves. the systems we have implemented are suitable for outdoor and indoor application, with the proviso that the systems suitable for outdoor application are implemented for different needs and spheres. the idea is to test the implemented systems in the future in laboratory and real conditions, but so that these systems do not require additional maintenance and servicing. this would significantly reduce the financial resources required to implement such systems. to make this as easy as possible, it is not enough to test the reliability of one component within the system, but we want to test the reliability of our entire system as a whole. in manuscript [20], the authors state that there are a small number of manuscripts that deal with this problem. specifically, they state that “system-level condition monitoring has not been explored sufficiently compared with component-level counterpart”. 6. conclusion the manuscript describes the implemented smart mobile system for real-time monitoring and measuring microclimatic parameters. the system was successfully tested in real conditions in the city of nis and the results obtained by applying the system are presented in the paper. the realized system is suitable because it can replace a large number of static systems. in addition, the proposed system has the ability to collect information about the location where measurements were made based on gps coordinates. finally, the realized system is modular, therefore it is possible to expand it if it is necessary. acknowledgment: this work has been supported by the ministry of education, science and technological development of the republic of serbia. references [1] v. rajs, v. milosavljevic, z. mihajlovic, m. zivanov, s. krco, d. drajic, b. prokic, “realization of instrument for environmental parameters measuring”, elektronika ir elektritechnika, vol. 20, no. 6, pp. 61–66, 2014. [2] air pollution in serbia: real-time air quality index visual map. [3] e. avallone, p. c. moralli, p. s. g. natividade, p. h. palota, j. f. de costa, j. r. antonio, s. a. v. juniorm, “am inexpensive anemometer using arduino board”, facta universitatis, series: electronics and energetics, vol. 32, no. 3, pp. 359–368, september 2019. [4] b. mihai, “about the smart weather station”, acta universitatis cibiniensis – technical series, vol. lxviii, no. 3, pp. 26–29, 2016. [5] y. zhang, o. chen, g. liu, w. shen, g. wang, “environment parameters control based on wireless sensor network in livestock buildings”, international journal of distributed sensor networks, vol. 12, no. 5, may 2016. [6] m. djordjevic and d. dankovic, “a smart weather station based on sensor technology”, facta universitatis, series: electronics and energetics, vol. 32, no. 2, pp. 195–210, june 2019. [7] m. djordjevic, j. vracar and a. stojkovic, “supervision and monitoring system of the power line poles using iiot technology”, in proceedings of the 55th international scientific conference on information, communication and energy systems and technologies (icest), 2020. 686 d. dankovic, m. djordjevic [8] m. djordjevic, v. paunovic, d. dankovic and b. jovičić, "smart autonomous agricultural system for improving yields in greenhouse based on sensor and iot technology", in proceedings of the 2nd young researchers conference (yours), 2020, p. 12 [9] m. djordjevic, b. jovicic, s. markovic, v. paunovic and d. dankovic, “a smart data logger system based on sensor and internet of things technology as part of the smart faculty”, journal of ambient intelligence and smart environments -1 (2020) (jaise), vol. 12, no. 4, pp. 359–373, 2020. [10] altium designer pcb software: https://www.altium.com/altium-designer/. [11] pic18f45k22 http://www.microchip.com/wwwproducts/en/pic18f45k22. accessed: 01.07.2020. [12] gsm/gprs sim800l: http://simcom.ee/documents/sim800/sim800_hardware%20design_v1.08.pdf. [13] bme280 sensor bosch sensortec: https://cdn-shop.adafruit.com/datasheets/bst-bme280_ds001-10.pdf. [14] bh1750fvi sensor ics – mouser electronics: http://rohmfs.rohm.com/en/products/databook/datasheet/ ic/sensor/light/bh1721fvc-e.pdf. [15] mq-7 sensor: https://www.sparkfun.com/datasheets/sensors/biometric/mq-7.pdf [16] gps module neo6mv2: https://www.u-blox.com/sites/default/files/products/documents/neo6_datasheet_(gps.g6-hw-09005).pdf [17] ds1307 – part number search – maxim integrated: https://datasheets.maximintegrated.com/en/ds/ds1307.pdf. [18] thingspeak cloud database http://thingspeak.com. [19] lcd display 20x4 – vishay: https://www.vishay.cco/docs/37314/lcd020n004l.pdf [on-line]. [20] z. ni, x. lyu, o. p. yadav, b. n. singh, s. zheng, d. cao, “overview of real-time lifetime prediction and extension for sic power converters”, ieee ttransactions on power electronics, vol. 35, no. 8, pp. 7765– 7794, august 2020. http://www.microchip.com/wwwproducts/en/pic18f45k22 http://simcom.ee/documents/sim800/sim800_hardware%20design_v1.08.pdf https://cdn-shop.adafruit.com/datasheets/bst-bme280_ds001-10.pdf facta universitatis series: electronics and energetics vol. 32, no 4, december 2019, pp. 601-613 https://doi.org/10.2298/fuee1904601t © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd novel single layer fault tolerance rca construction for qca technology zahra taheri, abdalhossein rezai, hamid rashidi acecr institute of higher education, isfahan branch, isfahan, iran abstract. quantum-dot cellular automata (qca) technology has become a promising and accessible candidate that can be used for digital circuits implementation at nanoscale, but the circuit design in the qca technology has been limited due to fabrication high-defect rate. so, this issue is an interesting research topic in the qca circuits design. in this study, a novel 3-input fault tolerance (ft) majority gate (mg) is developed. accordingly, an efficient 1-bit qca full adder is developed using the developed 3-input mg. then, a new 4-bit ft qca ripple carry adder (rca) is developed based on the proposed 1-bit ft qca fa. the developed circuits are implemented in the qcadesigner tool version 2.0.3. the results indicate that the developed qca circuits provide advantages compared to other qca circuits in terms of double and single cell missing defect, area and delay time. key words: nanoelectronics, fault-tolerance, majority gate, qca fa, ripple carry adder, quantum-dot cellular automata 1. introduction the qca technology is a promising computing paradigm that has widespread applications in emerging technologies like carbon nano tube field effect transistor (cntfet) [1, 2, 3] and silicon on insulator (soi) [4, 5]. in addition, it has the capability to provide better performance compared to other technologies such as conventional cmos technology [6]. the qca technology was addressed for the first time by lent et al. [7]. this technology presents a novel computation and information transformation method [8, 9, 10]. the four-dot square cell is the fundamental unit in the qca technology, which contains two free electrons [9, 11, 12]. thus, there exist two stable arrangements for qca cell. these two arrangements are denoted as cell polarization. interconnection among the electrons of intercell can make logic ‘1’ and logic ‘0’. so, the logical states can be computed with the charge configuration of the qca cell [8, 13]. the basic components in this technology are qca majority gate (mg), qca inverter gate (ig) and qca wire [9, 14]. this technology has received extensive attention due to the immense practical received march 21, 2019; received in revised form june 18, 2019 corresponding author: abdalhossein rezai acecr institute of higher education, isfahan branch, isfahan, iran (e-mail: rezaie@acecr.ac.ir)  602 z. taheri, a. rezai applications such as qca multiplexer [8, 9, 11], qca multiplier [15], efficient design of qca full adder (fa) [10, 15-35], comparator [14, 36] and shift register [37]. on the other hand, the fa circuit is an inseparable component in the computer arithmetic circuits. hence, efficient qca fa construction design is an interesting research topic. the 1-bit qca fa construction can be designed by employing mg and ig in the qca technology [10]. the qca fault tolerance (ft) circuit design is also an interesting and necessary in the qca technology [38-47]. hence, in order to present the developed digital circuits for future modern computing, many researchers have worked on the characteristics of ft in the qca full adder constructions. in this paper, novel 3-input mg is proposed to offer high fault tolerance for double and single missing cell defects. next, a novel 1-bit ft qca fa circuit is developed using the developed 3-input mg. in addition, novel 4-bit ft qca rca construction is designed using the developed 1-bit ft qca fa. the developed qca constructions are implemented with qcadesigner tool version 2.0.3. the simulation results confirm that the developed qca constructions have considerable advantages compared to other designs.the paper progresses as follows: in section 2, an overview of the qca technology is presented. then, the proposed design for new 3-input ft mg, 1-bit qca ft fa construction, and 4-bit qca ft rca construction are presented in section 3. the simulation results and comparison with related works are discussed in section 4. finally, conclusion is given in section 5. 2. background 2.1. qca cell the four-dot squared cell is the fundamental unit in the qca technology, which contains two free electrons [6]. these electrons occupy two of these four quantum dots due to electrostatic repulsion and diagonally occupy corners of the cell [18]. thus, there exist two stable arrangements for qca cell, which are shown in fig. 1 [9]. these two arrangements are denoted as cell polarization. interconnection among the electrons of intercell can be shown as logic ‘1’ and logic ‘0’. the logical state in this construction is defined by using the electrons position in quantum dots [20]. fig. 1 the polarizations of the qca cell [9] novel single layer fault tolerance rca construction for qca technology 603 2.2. the qca gates the mg, xor and the ig are indispensable building blocks of qca circuits [48]. fig. 2 shows a 3-input mg, an ig and xor gate [12, 48]. fig. 2 the basic gates in the qca technology (a) majority gate, (b) inverter gate, (c) exclusive-or gate [12, 48] the 3-input mg logical function is defined as follows [11]: m (a, b, c) = ba + ca + bc (1) the majority gates can work as 2-input or gates or 2-input and gates by applying 1 or -1 to one of the inputs, respectively [8]. 2.3. the qca fa the full adder is an important part of computer arithmetic circuits. if we have a, b, and cin as the inputs, and carry and sum as the outputs of 1-bit full adder, the sum and the carry outputs can be computed as follows [20]: in in in c maj 3(a,b,c ) ab+ac +bcout   (2) sum = (3) 2.4. defect in qca circuits as it is shown in fig. 3, the defects can be occurred during positioning of the cells to a surface or synthesis in cellular layout of the qca circuits [29]. in generally, they can be categorized as follows:  cell omission (missing cell): in this case, the location of the qca cell is changed from its original position [44, 45]. the cell omission is displayed in fig. 3(b).  cell displacement: in this case, the qca cell lost its original direction [41]. the cell displacement defect is displayed in fig. 3(c).  cell misalignment: in this case, the faults are occurred where the qca cells are shifted from their intended locations [45]. the cell misalignment is displayed in fig. 3(d). 604 z. taheri, a. rezai  extra (additional) cell: in this case, an extra cell is erroneously deposited on the substrate [29]. the extra cell defect is displayed in fig. 3(e).  cell dislocation or cell rotation: this fault is occurred where qca cells are rotated proportionate to the other cells in the array [40, 46]. fig. 3(f) shows this defect. fig. 3 defects in the qca circuits, (a) fault-free majority gate, (b) cell omission, (c) cell displacement, (d) cell misalignment, (e) extra cell, (f) rotation defect [29] 2.5 related works a majority gate is a vital component for 1-bit qca full adder constructions. hence, previous mgs and 1-bit qca constructions are reviewed in this section. note that, the fault tolerance is calculated as follows [42]: based on (4), the maximum fault tolerance in terms of the single missing cell defects is 20% for the conventional mg [42]. fig. 4 shows the mg construction in [47], with 3×3 tile. fig. 4 the utilized mg in [47] this design has 13 qca cells. the correct function is 16.67% and 55.6% in terms of the double and single cell missing defects, respectively. fig. 5 shows the utilized mg in [42] with 3 × 5 tile. this construction has 19 qca cells. the number of the correct outputs of this mg is 9 cases out of 15 cases in single cell omission. as a result, it achieves 60% fault tolerance. fault tolera ce (%) = number of wrong output patterns number of detect ve patterns × 100 (4) novel single layer fault tolerance rca construction for qca technology 605 fig. 5 the utilized mg in [42] the number of the correct outputs in this mg is 33 cases out of 105 cases in double cell omission. as a result, it achieves 31.4% fault tolerance. on the other hand, the full adder is an important component in the construction of digital circuits. roohi et al. [12] have presented 1-bit ft fa by using one 5-input mg, one 3-input mg, and one inverter gate. the percentage of the fault tolerance for the sum and carry outputs are 22.22% and 72.22%, respectively in [12]. this 1-bit ft fa has 0.01 µm2 area, 23 qca cells and three clock phases delay. cho and swartzlander [17] have presented 1-bit fa that utilizes three mgs and two igs. this 1-bit ft fa has 0.09 µm2 area, and four clock phases delay. the fault tolerance for the sum and carry outputs are 32% and 60.49%, respectively in [17]. du et al. [42] have presented 1-bit ft fa that utilizes one 3-input ft mg, one 5-input mg and one inverter gate. the fault tolerance of the sum and carry outputs are 29.92% and 94.87%, respectively in [42]. the area is 0.08 µm2 and delay is two clock phases. kassa and nagaria [25] have presented 1-bit fa that utilizes one 3-input mg, one 5-input mg and one ig. this 1-bit fa has 0.05 µm2 area, 48 qca cells and three clock phases delay. the fault tolerance for the sum output and carry output are 17.94% and 92.30%, respectively in [25]. hayati and rezaei [21] have proposed 1-bit fa that utilizes three 3-input mgs and one ig. this 1-bit fa has 0.02 µm2 area, 38 qca cells and two clock phases delay. the fault tolerance for the sum output and the carry output are 12.12% and 48.48%, respectively in [21]. kianpour et al. [22] have presented 1-bit fa that utilizes three 3-input mgs and one ig. this 1-bit fa has 0.07 µm2 area, 69 cells and three clock phases delay. the fault tolerance for the sum and carry outputs are 12.70% and 71.43%, respectively in [22]. tougaw and lent [34] have presented a 1-bit fa that utilizes five 3-input mgs and three inverter gates. this 1-bit fa has 0.2 µm2 area, 192 cells and five clock phases delay. the fault tolerance for the sum output and carry output are 34.78% and 60%, respectively in [34]. sen et al. [23] have presented a 1-bit fa that has 0.01 µm2 area, 31 cells and two clock phases delay. the fault tolerance for the sum output and carry output are 11.54% and 76.92%, respectively in [23]. angizi et al. [31] have presented a 1-bit fa that utilizes one 3-input mg, one 5input mg and one ig. this 1-bit fa has 0.09 µm2 area, 95 cells and five clock phases delay. the fault tolerance for the sum output is 25.55% and for carry output is 74.44%. 606 z. taheri, a. rezai 3. the developed constructions this section designs a new ft mg as a basic module. then, a novel 1-bit ft qca fa and 4-bit ft qca rca constructions are implemented using this novel ft mg. 3.1. the proposed ft mg the proposed construction for the 3-input ft mg is shown in fig. 6. in this construction, the inputs are denoted by a, b and c, and the output is denoted by out. the output of the proposed construction is determined as follows [20]: out = m (a, b, c) = ba + ca + bc (5) in addition, table 1 shows truth table of the developed 3-input ft mg. fig. 6 the proposed 3-input ft mg (a) qca layout (b) logic diagram table 1 truth table of the proposed ft 3-input mg the layout of the proposed 3-input ft mg consists of 20 qca cells. it also has 0.02 μm2 area with a 4×4 tile. 3.2. the developed 1-bit ft qca fa construction the logical design and layout of the developed 1-bit qca ft full adder that uses the proposed 3-input ft mg and a 3-input xor gate as building block, are shown in fig. 7. a b c out 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 1 1 0 0 0 1 0 1 1 1 1 0 1 1 1 1 1 novel single layer fault tolerance rca construction for qca technology 607 fig. 7 the proposed 1-bit qca ft fa (a) qca layout, (b) logic diagram as it shown in fig. 7, the inputs are labeled as a, b and cin and the outputs are shown by sum and cout. the proposed 1-bit qca ft full adder takes two clock phases to generate the sum function. the layout of the proposed 1-bit qca ft full adder includes 44 qca cells and its occupied area is 0.04 μm2. 3.3. the proposed 4-bit qca ft rca the logical design and layout of the proposed 4-bit qca ft rca are shown in fig. 8. as shown in fig. 8, the developed 4-bit qca ft rca uses four 1-bit qca ft full adder modules that is developed in this paper. fig. 8 the proposed 4-bit qca ft rca, (a) qca layout, (b) logic diagram as it shown in fig. 8, the inputs are labeled as a (a0, a1, a2, a3), b (b0, b1, b2, b3) and cin and the outputs are shown by sum (s0, s1, s2, s3) and cout. the developed 4-bit qca ft full adder takes four clock phases to generate the sum function. the layout of the proposed 4-bit qca ft rca consists of 236 qca cells and its occupied area is 0.49 μm2. 608 z. taheri, a. rezai 4. simulation results and comparison this section presents simulation results and comparison of the proposed ft constructions. the qcadesigner tool version 2.0.3 has been utilized to simulate the proposed constructions. 4.1. the proposed 3-input ft mg fig. 9 shows the simulation results of the proposed 3-input ft mg. to fair comparison, the layout of the proposed 3-input ft mg is re-plotted in fig. 10 in which the qca cells are shown by number. fig. 9 the output waveform of the designed 3-input ft mg fig. 10 the proposed mg with cell number table 2 shows the simulation results of the 3-input ft mg in terms of the single missing defect. the correct functions and the fault tolerance of the various constructions for the double and single cell missing defects are comparison in table 3. table 2 single missing cell defect in the proposed 3-input ft mg novel single layer fault tolerance rca construction for qca technology 609 table 3 the comparative table for the mg for double and single cell missing defects based on our obtained results that are shown in tables 2 and 3, and fig. 10, the fault tolerance of the proposed 3-input mg is 62.5% in terms of the single cell missing defect and 37.5% for the double cell missing defect. as a result, the fault tolerance for the double and single cell missing in the proposed 3-input mg are improved compared to mg in [42, 47]. 4.2. the developed 1-bit qca ft fa the output waveform of the developed 1-bit qca ft fa are shown in fig. 11. fig. 11 the output waveform of the developed 1-bit ft qca fa the carry output and sum output fault tolerance of the developed 1-bit qca ft fa are 84.6% and 56.4%, respectively. in addition, the area is 0.04 µm2 and delay is two defect cell result defect cell result 1 m(a, b, c) = correct 9 m(a, b, c) = correct 2 m(a, b', c) = incorrect 10 m(a, b, c) = correct 3 m(a, b, c) = correct 11 m(a, b, c) = correct 4 m(a, b, c) = correct 12 m(a, b, c) = correct 5 m(a', b, c) = incorrect 13 m(a, b, c) = correct 6 c = incorrect 14 m(a, b, c') = incorrect 7 c = incorrect 15 m(a, b, c) = correct 8 m(a', b', c') = incorrect 16 m(a, b, c) = correct reference (3 × 3-based mg) [47] (3 × 5-based mg) [42] this paper one cell missing two cells missing one cell missing two cells missing one cell missing two cells missing m(a, b, c) 5 6 9 33 10 45 total 9 36 15 105 16 120 fault tolerance (%) 55.6% 16.67% 60% 31.4% 62.5% 37.5% 610 z. taheri, a. rezai clock phases. table 4 shows the comparison of the 1-bit qca ft fa constructers. the cost is calculated as follows: cost=area (μm2) × delay (clock phase) (6) the comparison results between the proposed 1-bit qca ft fa and other 1-bit qca fa constructions show that although fault tolerance of the carry output in our design is lesser than the fault tolerance of the carry output in [42, 25], but the fault tolerance of the sum output in the proposed 1-bit qca ft fa has improved compared to [42, 25]. in addition, the proposed 1-bit qca ft fa has significant improvement in comparison with [42] in terms of area, and cost by about 50% and 50%, respectively. it should be mentioned that the percentage improvement is calculated as follows: rove e t (%) = (1 our mp ement on resu t prev ous mp ement on resu t ) × 100 (7) table 4 comparative table for 1-bit qca fa 4.3. the developed 4-bit qca ft rca fig. 12 indicates the output waveform of the proposed 4-bit qca ft rca. for optimum layout, the layout of the proposed 4-bit qca ft rca is implemented in only one layer using 236 qca cells and 0.49 μm2 area. it also takes four clock phases to generate the outputs. fig. 12 simulation results for the proposed 4-bit qca ft rca in order to present a fair comparison, we have compared the proposed 4-bit ft qca rca with the existing designs in [12, 17, 32, 33, 42] in terms of the clock phase, occupied area, number of qca cells and fault tolerance in table 5. reference [12] [17] [42] [25] [21] [22] [34] [23] [31] this paper fault tolerance (%) sum 22.22 32.00 26.92 17.94 12.12 12.70 34.78 11.54 25.55 56.4 carry 72.22 60.49 94.87 92.30 48.48 71.43 60.00 76.92 74.44 84.6 area 0.01 0.09 0.08 0.04 0.02 0.09 0.20 0.01 0.09 0.04 delay (clock phase) 3 3 2 2 2 4 5 2 5 2 cost (delay ×area) 0.03 0.36 0.16 0.08 0.04 0.36 1 0.02 0.45 0.08 novel single layer fault tolerance rca construction for qca technology 611 based on these results, our design provides a significant reduction on resulting the clock delay, area, number of qca cells and fault tolerance compared to previous designs in [12, 17, 23, 32, 33, 42]. moreover, the proposed constructions have significant robustness against the missing cell defects. they can achieve to higher level of fault tolerance. according to equation (8), the 4-bit qca rca has approximately 45.2% and 42.8% improvements compared to the presented 4-bit qca rca in [42] in terms of the number of qca cells and clock delay, respectively. table 5 comparative table for 4-bit qca rcas 5. conclusions this paper presented and evaluated an efficient 3-input ft mg. the fault tolerance of the proposed 3-input mg has investigated for double and single missing cell defects and compared to previous works. then, the 1-bit fa and 4-bit rca have been designed. the developed designs are simulated using qcadesigner tool version 2.0.3. our simulation results confirm that the proposed 3-input ft mg could reach 62.5% fault tolerance for the single cell missing defect and 37.5% fault tolerance for the double cell missing defect. the proposed 1-bit qca ft full adder could reach 84.6% and 56.4% fault tolerance for carry output and sum output, respectively. the results show that the developed adder constructions have significant improvements compared to other designs. references [1] a. naderi, m. ghodrati, "binary an efficient structure for t-cntfets with intrinsic-n-doped impurity distribution pattern in drain region", turk j elec eng & comp sci., vol. 26, no. 5, pp. 2335–2346, 2018. [2] a. karimi, a. rezai, "a design methodology to optimize the device performancein cntfet", ecs journal of solid state science and technology, vol. 6, no. 8, pp. 97–102, 2017. [3] m. shafizadeh, a. rezai, "improved device performance in a cntfet using lao3high-κ dielectrics", journal of computational electronics, vol. 16, no. 2, pp. 221–227, 2017. [4] m. zareiee, "a new construction of the dual gate transistor for the analog and digital applications ", int. j. electron. commun., vol. 100, no. 1, pp. 114–118, 2019. [5] a. naderi, k. moradi satari, f. heirani, " soi-mesfet with a layer of metal in buried oxide and a layer of sio2 in channel to improve rf and breakdown characteristics ", materials science in semiconductor processing, vol. 88, no. 1, pp. 57–64, 2018. [6] m. zareiee, "a new structure for lateral double diffused mosfet to control the breakdown voltage and the on-resistance", silicon, https://doi.org/10.1007/s12633-019-0092-5, pp. 1–9, 2019. reference number of cells area (µm 2 ) delay (clock phase) considered fault tolerance [12] 165 0.18 6 yes [17] 371 0.4 6 no [21] 156 0.18 5 yes [42] 431 0.44 7 yes [23] 153 0.11 5 no [32] 308 0.29 8 no [33] 570 0.68 8 no this paper 236 0.49 4 yes https://scholar.google.com/scholar?oi=bibs&cluster=16349063946136763704&btni=1&hl=en https://link.springer.com/article/10.1007/s10825-017-0964-0 http://dx.doi.org/10.1007/s12633-019-0092-5 612 z. taheri, a. rezai [7] c. s. lent, p. d. tougaw, w. porod, g.h. bernstein, "quantum cellular automata", nano., vol. 4, no. 1, pp. 49–57, 1994. [8] h. rashidi, a. rezai, "design of novel efficient multiplexer construction for quantum-dot cellular automata", j. nano electr. phys., vol. 9, no. 1, pp. 1–7, 2017. [9] h. rashidi, a. rezai, s. soltany, "high-performance multiplexer construction for quantum-dot cellular automata", j. comput. electr., vol. 15, no. 3, pp. 968–981, 2016. [10] d. mokhtari, a. rezai, h. rashidi, f. rabeie, s. emadi, a. karimi, "design of novel efficient full adder construction for quantum-dot cellular automata technology", facta universitatis, series: electronics and energetics, vol. 31, no. 2, pp. 279–285, 2018. [11] b. sen, m. goswami, s. mazumdar, b. k. sikdar, " towards modular design of reliable quantum-dot cellular automata logic circuit using multiplexers", comput. electr. eng., vol. 45, pp. 42–54, 2015. [12] a. roohi, r. f. demara, n. khoshavi, "design and evaluation of an ultra-area-efficient ft qca full adder", microelectr. j., vol. 46, no. 6, pp. 531–542, 2015. [13] m. niknezhad divshali, a. rezai, s.s. falahieh hamidpour, "design of novel coplanar counter circuit in quantum-dot cellular automata technology", in transaction journal of theoretical physics, 2019. [14] a shiri, a rezai, h mahmoodian, "design of efficient coplanar 1-bit comparator circuit in qca technology", facta universitatis, series: electronics and energetics, vol. 32, no. 1, pp.119–128, 2019. [15] i. edrisi arani, a. rezai, "novel circuit design of serial-parallel multiplier in quantum-dot cellular automata technology", j. comput. electr., vol. 17, no. 4, pp.1771–1779, 2018. [16] h. roshany, a. rezai, " novel efficient circuit design for multilayer qca rca", int. j. theor. phys., vol. 58, no. 6, pp. 1745–1757, 2019. [17] h. cho, e. e swartzlander, "adder and multiplier design in quantum-dot cellular automata", ieee trans comput., vol. 58, no. 6, pp. 721–727, 2009. [18] y. adelnia, a. rezai, "a novel adder circuit design in quantum-dot cellular automata technology", int. j. theor. phys., vol. 58, no. 1, pp. 184–200, 2019. [19] m. r. azghadi, o. kavehei, k. navi, "a novel design for quantum-dot cellular automata cells and fulladders", j. appl. sci., vol. 7, no. 22, pp. 3460–3468, 2007. [20] h. rashidi, a. rezai, "high-performance full adder construction in quantum-dot cellular automata", j. eng., vol. 2017, no. 7, pp. 394–402, 2017. [21] m. hayati, a. rezaei, "design of novel efficient adder and subtractor for quantum-dot cellular automata", int. j. circuit theor. appl., vol. 43, no. 10, pp. 1446–1454, 2014. [22] m. kianpour, r. s. nadooshan, k. navi, "a novel design of 8-bit adder/subtractor by quantum-dot cellular automata", j. comput. sys. sci., vol. 80, no. 7, pp. 1404–1414, 2014. [23] b. sen, a. rajoria, b. k. sikdar, "design of efficient full adder in quantum-dot cellular automata”, sci world j., vol. 2013, pp. 1–10, 2013. [24] m. balali, a. rezai, h. balali, f. rabiei, s. emadi, " towards coplanar quantum-dot cellular automata adders based on efficient three-input xor gate", result phys., vol. 7, pp. 1389–1395, 2017. [25] s. r. kassa, r. k. nagaria, "a novel design of quantum-dot cellular automata 5-input mg with some physical proofs", j. comput. electr., vol. 15, no. 1, pp. 324–334, 2016. [26] r. farazkish, f. khodaparast, "design and characterization of a new ft full adder for quantum-dot cellular automata", microprocess microsyst., vol. 39, no. 6, pp. 426–433, 2015. [27] s. sheikhfaal, s. angizi, s. sarmadi, m. h. moaiyeri, s. sayedsalehi, "designing efficient qca logical circuits with power dissipation analysis", microelecter. j., vol. 46, no. 6, pp. 462–471, 2015. [28] h. b. sousan, m. mosleh, s. setayeshi, "designing and implementing a fast and robust full-adder in quantum-dot cellular automata (qca) technology", j. adv. comput. res., vol. 6, no. 1, pp. 27–45, 2015. [29] m. goswami, b. sen, r. mukherjee, b. k sikdar, "design of testable adder in quantom-dot cellular automata with fault secure logic", microelectr j., vol. 60, pp. 1–12, 2017. [30] k. navi, r. farazkish, s. sayedsalehi, m. r. azghadi, "a new quantum-dot cellular automata fulladder", microelectr j., vol. 41, no. 12, pp. 820–826, 2010. [31] s. angizi, e. alkaldy, n. bagherzadeh, k. navi, " novel robust single layer wire-crossing approach for exclusive-or sum of products logic design with quantum-dot cellular automata", j. low power electr., vol. 10, no. 2, pp. 259–271, 2014. [32] s. hashemi, m. tehrani, k. navi, "an efficient quantum-dot cellular automata full-adder", sci. res. essays., vol. 7, no. 2, pp. 177–189, 2012. [33] i. hänninen, j. takala, "binary adders on quantum-dot cellular automata", j. signal. proc. syst., vol. 58 no. 1, pp. 87–103, 2010. [34] p. d. tougaw, c. s. lent, "logical devices implemented using quantum cellular automata", j. appl. phys., vol. 75, no. 3, pp. 1818–1825, 1993. novel single layer fault tolerance rca construction for qca technology 613 [35] m. balali, a. rezai, " design of low-complexity and high-speed coplanar four-bit ripple carry adder in qca technology", international journal of theoretical physics, vol. 57, no. 7, pp. 1948–1960, 2018. [36] r. mokhtarii, a. rezai, "investigation and design of novel comparator in quantum-dot cellular automata technology", journal of nano-& electronic physics, vol. 10, no. 5, p. 05014(4pp), 2018. [37] m. niknezhad divshali, a. rezai, a. karimi "investigation and design of novel comparator in quantum-dot cellular automata technology", international journal of theoretical physics, vol. 57, no. 11, pp. 3326–3339, 2018. [38] a. fijany, b. n. toomarian, "new design for quantum dots cellular automata to obtain fault tolerant logic gates", j. nano. res., vol. 3, no. 1, pp. 27–37, 2001. [39] r. farazkish, k. navi, "new efficient five-input majority gate for quantum-dot cellular automata”, j. nano. res., vol. 14, no . 11, pp. 1–6, 2012. [40] r. farazkish, s. sayedsalehi, k. navi, "novel design for quantum dots cellular automata to obtain ft majority gate", j. nano., vol. 2013, pp. 1–7, 2012. [41] m. dalui, b. sen, b. k. sikdar, "fault tolerant qca logic design with coupled majority-minority gate", int. j. comput. appl., vol. 1, no. 29, pp. 81–87, 2010. [42] h. du, h. lv, y. zhang, f. peng, g. xie, "design and analysis of new ft majority gate for quantumdot cellular automata", j. comput. electr., vol. 15, no. 4, pp. 1484–1497, 2016. [43] b. sen, m. dutta, r. mukherjee, r. k. nath, a.p. sinha, b.k. sikdar, "towards the design of hybrid qca tiles targeting high fault tolerance", j. compu. electr., vol. 15, no. 2, pp. 429–445, 2016. [44] m. momenzadeh, m. ottavi, f. lombardi, "modeling qca defects at molecular-level in combinational circuits", in proc. ieee int. symp. defect fault tolerance vlsi syst., 3-5 oct 2005, pp. 208–216, [ 45] y. mahmoodi, m. a .tehrani, "novel fault tolerant qca circuits”, in proc. conf. electr. comput. eng., 20-22 may 2014, pp. 20–22. [46] m. rahimpour gadim, n. jafari navimipour "a new three-level fault tolerance arithmetic and logic unit based on quantum dot cellular automata", microsyst. technol., 2017. [47] j. huang, m. momenzadeh, f. lombardi, "on the tolerance to manufacturing defects in molecular qca tiles for processing-by-wire", j. electr. test., vol. 23, no. 2-3, pp. 163–174, 2017. [48] a. newaz bahar, md. mo. asaduzzaman, "a novel 3-input xor function implementation in quantum dot-cellular automata with energy dissipation analysis", alexandria engineering journal, vol. 57, no. 2, pp. 729–738, 2018. https://scholar.google.com/scholar?oi=bibs&cluster=2756061675598716689&btni=1&hl=en https://scholar.google.com/scholar?oi=bibs&cluster=2756061675598716689&btni=1&hl=en 12516 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 639 – 654 https://doi.org/10.2298/fuee2404639m © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper on the design of passive dispersive filters for analog signal processing applications hanane meliani1, emilie avignon-meseldzija1, jelena anastasov2, dejan n. milic2, pietro maris ferreira1 1université paris-saclay, centralesupélec, sorbonne-université, cnrs, lab. de génie electrique et electronique de paris 2faculty of electronic engineering, university of niš, aleksandra medevedeva 4, 18104 niš, serbia orcid ids: hanane meliani https://orcid.org/0009-0006-2118-3880 emilie avignon-meseldzija https://orcid.org/0000-0001-5268-9223 jelena anastasov https://orcid.org/0000-0002-8200-4130 dejan milic https://orcid.org/0000-0001-6472-2027 pietro maris ferreira https://orcid.org/0000-0002-0038-9058 abstract. the paper presents the design of two dispersive filters (also called phasers) dedicated to analog signal processing (asp) applications. possible asp applications targeted for these filters are also proposed: analog pulse compression radar, analog chirp fourier transformer and frequency discriminator. in the past decades, dispersive filters for asp have been implemented with surface acoustic wave (saw) filters, having a reduced bandwidth leading to a poor resolution in the applications. consequently, designing these filters with a larger bandwidth is a significant progress and this is what is proposed in this work. the design of the two filters is described step-by-step: the mathematical method employed to optimize the parameters of the filters, the calculation of theoretical values of components and the selected real values of components of the shelves for the pcb. the two measured filters, composed of 2 passive cells, have negative slope and positive slope group delay characteristics: the first filter has a group delay downslope of -1 ns/ghz for the considered bandwidth [700mhz – 1.9ghz], and the second has a group delay upslope of 1.25ns/ghz for the considered bandwidth [500mhz1.3ghz]. key words: dispersive filter, phasers, analog signal processing, group delay, analog chirp fourier transformer, frequency discriminator received february 16, 2024; revised september 30, 2024; accepted october 09, 2024 corresponding author: hanane meliani université paris-saclay, centralesupélec, sorbonne-université, cnrs, lab. de génie electrique et electronique de paris (e-mail: hanane.meliani@centralesupelec.fr) *an earlier version of this paper was presented at the 16th international conference on advanced technologies, systems and services in telecommunications (telsiks 2023), october 25-27, 2023, niš, serbia [1] https://orcid.org/0009-0006-2118-3880 https://orcid.org/0000-0001-5268-9223 https://orcid.org/0000-0002-8200-4130 https://orcid.org/0000-0001-6472-2027 https://orcid.org/0000-0002-0038-9058 640 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira 1. introduction most of the receivers in communication and radars nowadays are built on the idea that the signal processing will be achieved in the digital domain. the analog front end is, most of the time, reserved to the signal conditioning (mostly amplification, filtering and multiplication) before the analog-to-digital conversion (adc). in this approach one of the most power-hungry blocks is the adc, especially when considering very large bandwidth signal to be digitized. this is why a new research trend consists in rethinking the receiver architectures with direct analog signal processing (asp). the authors in [2] conducted an extensive overview of the different techniques to achieve signal processing dedicated to telecommunication systems directly in the analog domain. among the numerous approaches to achieve asp, including analog spiking neural networks [3] and analog-ftt [4], we focus in this article on phasers-based asp systems [5]. the signal processing operations that can be achieved directly in the analog domain with phasers-based systems are for example: analog pulse compression, analog chirp fourier transform and frequency discrimination for real time spectrum analysis. as its name indicates, the key component for any of these signal processing applications is the phaser, which is a dispersive filter. a dispersive filter attributes a specific delay for a specific frequency. several techniques have been considered to obtain such filters, each of these techniques having strengths and limitations. in the eighties these kinds of filters have been implemented with surface acoustic wave (saw) filters [6]. unfortunately, despite the large dispersion that can be obtained, they present a reduced bandwidth and are then not suitable for nowadays communication and radar applications. in optical communication, where there is a need for sharp optical pulses, the tendency is to time compression with optical phasers [7, 8]. these optical devices are very bulky and would not be compatible with traditional telecommunication systems or embedded applications. in electronics and microwave techniques, many attempts to implement these arbitrary group delay engineered filters with passive lc topologies, active cmos integrated technologies or microstrip lines have been published with variable performances [9-14]. one of the most challenging part of the design of such filters is the optimization of parameters to obtain a linear group delay versus frequency. several methods have been proposed [9, 15, 16] very sensitive to group delay initialization. in what comes next, we propose to design downslope and upslope linear group delay dispersive filters for possible use in applications in analog signal processing with the robust optimization method proposed in [17] and we use components of the shelves soldered on pcbs. the paper is organized as follows: section ii presents possible phasers-based asp applications for the dispersive filter. section iii presents two optimized upslope and downslope dispersive filters suitable for these kinds of applications and section iv presents measurement results of the realized filters. 2. phasers-based analog signal processing applications 2.1. state-of-the-art of phasers-based analog signal processing applications many attempts have been conducted the last decades to implement various phasersbased asp. most of these attempts concerns real-time spectrum analysis. for these realtime spectrum analysis, we can distinguish several architectures. the first architecture is the spectrum sniffer [18-20]. the spectrum sniffer is based on a phaser having a stepped on the design of passive dispersive filters for analog signal processing applications 641 group delay response versus frequency. it means that a given frequency bandwidth has several channel bandwidths having each a different group delay. consequently, when a signal goes through this spectrum sniffer, we obtain at the output a signal decomposed in time, depending on which frequency bandwidths were present at the input. the principle is the same for the frequency discriminator excepts that for this latter the group delay is linear versus frequency [21]. another architecture for rel-time spectrum analysis is the analog chirp fourier transformer described later in what follows in section 2.3. several attempts of implementing this architecture have been published in [22-25]. an interesting attempt of implementing phasers-based systems concerns uwb communication techniques [26]. in this work, communication pulses are transformed through a dispersive filter into uwb (ultra wide band) signals whose properties depends on the dispersive filters properties. thus, only an appropriate dispersive filter, mathematically calculated, can retrieve the original signal. it is a temporal expansion paving the way to uwb fully-analog communication. several attempts of temporal expansion have also been conducted with phasers [27, 28] to slow down an rf signal in order to make it easier to sample it for further processing. another example of temporal manipulation is the work published in [29], where a time reversal mirror has been implemented with a phaser. in what follows, we will describe more precisely the following phasers-based systems: the analog pulse compression radar, the analog chirp fourier transformer and the frequency discriminator. 2.2. analog pulse compression radar for embedded short-range detection, fmcw (frequency modulated continuous wave) radars are generally preferred to their pulse-radar counterpart due to the relative simplicity to emit a chirp signal compared to a short-time high-power pulse. in a large majority of fmcw radar architectures, the sent chirp is multiplied with the received chirp to obtain a beat signal whose frequency is proportional to the distance [30, 31]. the beat signal is then digitized and processed in the frequency domain, most of the time by fft. a possible alternative to the architecture with the multiplier, implemented in the eighties with saw filter, is the one with an analog matched filter [32] as presented in figure 1. the emitter of the analog pulse compression radar is composed of a chirp generator creating the signal s(t) and a pa (power amplifier). the receiver is composed of a lna (low noise amplifier) and an analog matched filter. ideally, the analog matched filter is a filter whose impulse response h(t) is a complex-conjugated and time-reversed version of s(t). the group delay τ (f) of the matched filter must attribute a specific delay to each frequency in order to achieve the compression. for example, if we have a linear up-chirp signal s(t), then the group delay τ (f) of the matched filter must be with linear negative slope. at the output of the matched filter we obtain a pulse corresponding to the time reference due to the chirp applied without delay and pulses corresponding to delayed chirps from target feedbacks. to exploit this output, it is possible to place a comparator and a counter to evaluate the delay 2d/c proportional to the distance d. 642 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira fig. 1 analog pulse compression radar for the sake of simplicity, we will consider all the signals as ideal complex signals (manipulating exponential signal is easier and is the ideal reference). the transmitted upchirp signal is 2 0 1 2 2( ) i f t at s t ae    +   = (1) where f0 is the initial frequency of the chirp and a is the ratio b/t with b the bandwidth of the chirp and t the sweep time of the chirp. let’s consider that the chirp is reflected by a target at a distance d, corresponding to a delay in the received chirp τ0 = 2d/c. then, we have at the input of the matched filter 2 2 0 0 0 0 1 1 2 2 ( ) ( ) 2 2 0( ) i f t at i f t t e t ae a e      +  − + −       = + (2) the impulse response of the matched filter is 2 2 1 2 2( ) i f t at h t e    −   = (3) where f2 = f0 + b. the output of the filter out(t) is then the convolution of h(t) with e(t) 2 0 ( ) ( ) ( ) t out t h x e t x dx= − (4) leading to 2 2 0 0 0 0 1 1 2 2 ( ) ( ) 2 2 0 0( ) sinc(2 ( )) sinc(2 ( )) i f t at i f t a t out t ae b t t a e b t t      +  − + −       = − + − +  (5) from (5), it can be observed that the output signal of the matched filter is composed of two sinc functions. one sinc function is centered around t and is the time reference for the radar, and the other sinc is centered around t + τ0. so the time difference between the maximum of the two sinc is the delay to the target. the distance to the target is then deduced by: d = τ0c/2. due to the distance to the target, the amplitude of the signal reflected by the target is attenuated, this is why the second pulse is always smaller than the reference. on the design of passive dispersive filters for analog signal processing applications 643 figure 2 presents the output of the analog matched for two different chirp bandwidths b: 1.5 ghz and 5 ghz. the other parameters are: t = 10ns, f0 = 100 mhz, a = 1, a0 = 0.7 and a distance to the target d = 30 cm corresponding to a τ0 of 2 ns. as it is predictable from (5) based on sinc function, the principal lobe width decreases with increased chirp bandwidth b. it means that the larger is the bandwidth of chirp and matched filter, the better the resolution (i.e as in fmcw radar). one of the limitations in analog pulse compression radar is the achievable bandwidth of the matched filter. fig. 2 output of analog matched filter with b = 1.5 ghz (up) and b = 5 ghz (down) 2.3. analog chirp fourier transformer the concept of analog chirp fourier transformer, based on saw dispersive filters, has been first published in mid-seventies, beginning of eighties [6, 22, 23]. due to the limited bandwidth of saw filters, the concept has been first abandoned and now start to be reexplored with new techniques to design the dispersive filters [24, 25]. the architecture of the analog chirp fourier transformer is presented in figure 3. the basic operation of the chirp-transformation consists in the multiplication of the input signal by a complex linearly frequency-modulated waveform sa(t) (the chirp) followed by the convolution of this product through a filter whose impulse response ha(t) is a complex chirp of opposite modulation sa*(t) leading to: ( ) ( ( ) ( )) ( )a a ay t e t s t h t=   (6) and ( ) ( ) ( ) ( )a a ay t e s h t d=   −   (7) with 2 ( ) i kt as t e− = and 2 ( ) i kt ah t e = the convolution of the product then becomes 2 2( )( ) ( ) i k i k t ay t e e e d−   −  −=   (8) 644 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira which is after development 2 2( ) ( )i kt i kt ay t e e e d −  =   (9) after multiplying by sa(t) we finally obtain at the output an expression approaching the fourier transform with a time/frequency correspondence 2( ) ( ) i kt a aout t e e d−  =   (10) fig. 3 architecture of analog chirp fourier transformer figure 4 presents the complex magnitude of the output of an analog chirp fourier transformer with k = δf/t = 3 ˑ 1016, with δf = 3 ghz, which is the bandwidth to analyze and t = 100 ns the sweep time. at the input we consider the sum of three sinusoidal signals fig. 4 input and output of analog chirp fourier transformer on the design of passive dispersive filters for analog signal processing applications 645 of frequency f1 = 1 ghz, f2 = 1.5 ghz and f3 = 2 ghz. it can be observed that at the output there are three peaks appearing at t1 = 33.33 ns, t2 = 50 ns and t3 = 66.66 ns corresponding to frequency f1 =1 ghz, f2 =1.5 ghz and f3 = 2 ghz. 2.4. frequency discriminator a frequency discriminator directly exploits the property of the dispersive filter. the dispersive filter attributes a specific delay corresponding to a specific frequency. so if we apply at the input of the dispersive filter a sum of signals at different frequencies f1, f2 and f3 and we multiply it with a gaussian or triangular pulse, we will obtain at the output several gaussian or triangular pulse centered around the delays τ1, τ2 and τ3, as illustrated in figure 5. this principle has been used for example in [19, 20] to create a real-time spectrum sensor for cognitive radios. figure 6 presents the waveform of the input of the filter and the output of the filter to illustrate the method. at the input, we consider the sum of three sinusoidal signals of frequencies f1 = 1 ghz, f2 = 1.5 ghz and f3 = 2 ghz, as for the analog chirp fourier transformer. fig. 5 architecture of the frequency discriminator 3. description of the dispersive filters 3.1. optimization of the dispersive filters the matched filter is a dispersive filter, more particularly with a linear group delay. to calculate the cascade of suitable all-pass cells we will use the most recent and robust mathematical method presented in [17]. this method has been used already to optimize the positive slope active dispersive filters presented in [11]. for a two cells cascade of downslope dispersive filter on the bandwidth 700 mhz – 2 ghz, optimal parameters are proposed in table 1 and for a two cells cascade of upslope dispersive filter on the bandwidth 500 mhz – 1.3 ghz, optimal parameters are given in table 2. in these tables the f0i and qi refer to the center frequency and quality factor of general second order all pass cell having the transfer function given by (11). the group delay of this filter is the derivative of the phase response with respect to ω, and can be expressed as (12) in 646 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira accordance with [33]. this kind of second order filter can be obtained with a passive bridge-t approach like presented in [17] or with an active approach like in [11]. in this work we selected the passive approach and the synthesis is described in the next paragraph. fig. 6 input and output of the dispersive filter in the frequency discriminator table 1 optimized parameters for downslope filter cell i f0i (mhz) qi 1 800.698 1.1099 2 1368.9 1.2242 table 2 optimized parameters for upslope filter cell i f0i (mhz) qi 1 1179.95 1.1013 2 1483.33 2.0178 as soon as the filter have the same input and output impedance, the cascade of the filter will result for the group delay as the sum of the group delay of each cell. for both filters, the individual group delay of each cell as well as the expected group delay of the cascade are presented in figures 7 and 8. from these figures, we can observe that the group delays have the following characteristics: ▪ for the downslope dispersive filter, it is linear from 780 mhz up to 1.9 ghz with a downslope of -1 ns/ghz. ▪ for the upslope dispersive filter, it is linear form 500 mhz up to 1.3 ghz with an upslope of 1.25 ns/ghz. on the design of passive dispersive filters for analog signal processing applications 647 2 20 0 2 20 0 ( ) i i i i i i i j q h j j q  − −  +  =  − +  + (11) 2 2 0 0 2 2 2 2 2 2 0 0 ( ) 2 ( ) i i i i i i i q q  +   =    +  − (12) fig. 7 group delay of each cell and group delay of the cascade cell1+cell2 for downslope dispersive filter fig. 8 group delay of each cell and group delay of the cascade cell1+cell2 for upslope dispersive filter 648 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira 3.2. components calculation the passive topology used for the design of each second-order all-pass cell is presented in figure 9. we selected the bridge-t topology as it is a classical topology to design secondorder filter as for example in [34]. to obtain the wanted group delay based on the values of f0i and qi, we use the formulas provided in [35], which are 1 2 0 i i rq l =  (13) 2 2 0i i r l q =  (14) 1 0 1 i i c rq =  (15) 2 0 i i q c r =  (16) where r is the wanted value of input and output impedance, here 50 ω. resulting calculated nominal values are synthesized in table 3 and 4 together with the selected smd components which have been selected. these selected components are the one with the closest value available in the market. the view of one cell is presented in figure 10. table 3 ideal vs smd components values for downslope filter cell i 2l2 (nh) l1/2 (nh) c1 (pf) (c2-c1)/2 (pf) ideal 1 2 17.6 10.5 5.5 3.2 3.6 2 0.4 0.24 smd 1 2 18 10 4.7 2.7 3.3 2.2 0.5 0.3 table 4 ideal vs smd components values for upslope filter cell i 2l2 (nh) l1/2 (nh) c1 (pf) (c2-c1)/2 (pf) ideal 1 2 13.3 5.32 3.42 5.41 2.66 1.06 0.0352 1.63 smd 1 2 13 6.8 2.7 4.7 3.3 1 0 1.8 on the design of passive dispersive filters for analog signal processing applications 649 fig. 9 selected passive bridge-t topology for the second-order all-pass filter fig. 10 view of one bridge-t cell with sma connectors 4. measurement of the dispersive filters and discussion 4.1. measurement results a picture of the downslope prototype is presented in figure 11. the cells are cascaded with sma male connectors and the circuit has been measured using a rhode and schwarz znd vector network analyzer. calibration has been done with n connectors and tosm (through-open-short-match) cal-kit. for measurement, two n/sma adapters have been added after calibration and are connected to the vna through 60 cm radiall cables. group delay is measured using aperture width of 5%. for the downslope dispersive filter, the resulting group delay is presented in figure 12 and for the upslope dispersive filter the group delay is presented in figure 13. in both cases, the measured group delay totally fits with the ideal expected group delay. it can be noticed that a delay offset exists and is due to the two n/sma adapters and the length of the lines in the prototype. for the downslope dispersive filter, the bandwidth of linear-shape of the group delay is as predicted from 780 mhz up to 1.9 ghz and goes on to 2.3 ghz. as predicted the downslope of the group delay is -1 ns/ghz. for the upslope dispersive filter, the bandwidth of linear-shape of the group delay is from 500 mhz up to 1.3 ghz. the upslope of the group delay is 1.25 ns/ghz. 650 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira fig. 11 two-cells prototypes for downslope and upslope dispersive filters fig. 12 measured group delay compared to ideal group delay for the downslope dispersive filter fig. 13 measured group delay compared to ideal group delay for the upslope dispersive filter the s-parameters are presented in figure 14 and figure 15. s-parameters show a suitable matching up to 1.8 ghz for the downslope dispersive filter with s11 and s22 parameters remaining below -10 db, and for the upslope dispersive filter a suitable matching up to 1 ghz with s11 and s22 parameters remaining below -10 db. on the design of passive dispersive filters for analog signal processing applications 651 fig. 14 measured s-parameters of the cascaded cells for the downslope dispersive filter fig. 15 measured s-parameters of the cascaded cells for the upslope dispersive filter 4.2. comparison with the state of the art and discussion in terms of performance, our work can be compared with the state-of-the-art mainly through two different angles: the performance of the dispersive filter and its technology and the performance of the optimization method to obtain a linear group delay phaser. regarding the performance of the dispersive filter we should first recall that there is a lot of possibilities to implement phasers and more generally delay cells: saw filters, lc filters on pcbs, integrated circuits, microstrip lines, waveguides, optical devices. the comparison here will be restricted to pcbs with lumped components and integrated circuits implementation having a linear group delay characteristic. in the previously published work [36], dispersive filters are implemented with smd components on pcbs. the authors implemented linear group delay filters with upslope and downslope characteristics. they employed a cascade of two up to nine second order all-pass filters to obtain different values of dispersion and slope in a given bandwidth. using 9 cascaded stages they obtain an upslope of +/6ns/ghz in the bandwidth 500 mhz – 1 ghz. when using only two stages, they obtain, various upslope group delay characteristics between 1.5 ns/ghz with a good linearity up to 8 ns/ghz with a poor linearity 652 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira in the same bandwidth. with integrated circuits, the bandwidth of linear group delay is much wider, because l and c elements must be small to be integrated. it also leads to small dispersion. for example, in [28], the bandwidth is 12 – 16 ghz, but the maximum dispersion is only 1.2 ns leading to an upslope of group delay characteristic of 0.375 ns/ghz. in [38], the bandwidth is of 0.4 – 4 ghz and the maximum dispersion is 1.2 ns leading to a slope of 0.3 ns/ghz. to compensate for this bandwidth dispersion trade-off, an interesting technique is to build a loop with the dispersive filter as presented in [21]. with this technique, the group delay slope is increased at each turn in the loop. beside the bandwidth/dispersion trade-off highlighted before, there is also a limitation of the approach of cascading cells. the limitation comes from the fact that it assumes that the matching is ideal between the cascaded cells, and this assumption is never totally true in practice resulting in damaged linearity of the group delay. concerning the performance of the optimization method itself there is no particular limitations. it has been proved in [17] that it is robust compared to the other methods, thanks to an optimized initialization of the group delay. it has been showed that it is possible to optimize mathematically up to 21 cells, which is much more than what is needed, or achievable when considering practical implementations. 5. conclusion in this paper two dispersive filters with downslope and upslope linear group delay characteristic have been designed based on a cascade of two optimized second order passive all-pass cells. measurement results show for one filter a useful bandwidth from 780 mhz up to 1.9 ghz, with a downslope -1 ns/ghz and for the other filter a useful bandwidth from 500 mhz up to 1.3 ghz, with an upslope 1.25 ns/ghz. the targeted applications for these kinds of filters are described: analog pulse compression radar, analog chirp fourier transformer and frequency discriminator. while there is still space for improving linearity, measurement results indicate that these kinds of dispersive filters can be successfully implemented using lumped elements in lower gigahertz range of frequencies. references [1] h. meliani, e. avignon-meseldzija, j. anastasov, d. milic and p. m. ferreira, "design of a passive dispersive filter for analog pulse compression radar," in proceedings of the 16th international conference on advanced technologies, systems and services in telecommunications (telsiks), nis, serbia, 2023, pp. 262-265. [2] m. m. safari and j. pourrostam, "the role of analog signal processing in upcoming telecommunication systems: concept, challenges, and outlook", signal process., vol. 220, no. february, p. 109446, 2024. [3] z. jouni, t. soupizet, s. wang, a. benlarbi-delai, p. m. ferreira, "rf neuromorphic spiking sensor for smart iot devices", analog integr circ sig process, vol. 117, pp. 3–20, 2023. [4] x. chao and q. li, "a 128-gs/s timing-robust sampling architecture exploiting analog fft", in proceedings of the ieee international symposium on circuits and systems (iscas), monterey, ca, usa, 2023, pp. 1–4. [5] c. caloz, s. gupta, q. zhang, and b. nikfal, "analog signal processing: a possible alternative or complement to dominantly digital radio schemes", ieee microw. mag., vol. 14, no. 6, pp. 87–103, sep. 2013. [6] c. campbell, surface acoustic wave devices and their signal processing applications. elsevier, 2012. [7] k. kashiwagi, y. kodama, y. tanaka, and t. kurokawa, "tunable pulse compression technique using optical pulse synthesizer", in proceedings of the conference on lasers and electro-optics and 2009 conference on quantum electronics and laser science conference, 2009, pp. 1–2. on the design of passive dispersive filters for analog signal processing applications 653 [8] c. song, j. qian, m. lei, z. zheng, s. huang, and x. gao, "a chirpratetunable microwave photonic pulse compression system for multioctave linearly chirped microwave waveform", ieee photonics j., vol. 11, no. 2, pp. 1–13, 2019. [9] j. a. de frança ferreira, e. avignon-meseldzija, p. maris ferreira, p. benabes, "design of integrated allpass filters with linear group delay for analog signal processing applications", int. j. circuit theory applic., wiley, vol. 48, no. 5, pp. 658–673, 2020. [10] p. keerthan and k. j. vinoy, "design of cascaded all pass network with monotonous group delay response for broadband radio frequency applications", iet microw. antennas propag., vol. 10, no. 7, pp. 808–815, may 2016. [11] e. avignon-meseldzija, jelena anastasov, dejan n milic, "a linear group delay filter with tunable positive slope for analog signal processing", int. j. circuit theory applic, wiley, vol. 49, no. 5, pp. 1307– 1326, 2021. [12] r. gómez-garcía, l. yang, m. malki and j. -m. muñoz-ferreras, "flat-group-delay rf planar filters with transmission zeros using transversal circuits", ieee trans. circuits syst. i: regul. pap., vol. 70, no. 10, pp. 3843–3856, oct. 2023. [13] g. yang, d. lee and b. -w. min, "cascaded reflection-type group delay controller with a wideband flat group delay", ieee microw.wirel. tech.. lett., vol. 33, no. 7, pp. 979–982, july 2023. [14] s. gupta, a. parsa, e. perret, r. v. snyder, r. j. wenzel, and c. caloz, "group-delay engineered noncommensurate transmission line all-pass network for analog signal processing", ieee trans. microw. theory techn., vol. 58, no. 9, pp. 2392–2407, sep. 2010. [15] t. henk, "the generation of arbitrary-phase polynomials by recurrence formulae", int. j. circuit theory applic , vol. 9, no. 4, pp. 461–478, oct. 1981. [16] p. j. osuch and t. stander, "a geometric approach to group delay network synthesis", radioengineering, vol. 25, no. 2, pp. 351–864, jun.2016. [17] d. n. milic, e. avignon-meseldzija, j. a. anastasov, h. meliani, and a. benlarbi-delaï, "a robust algorithm for the design of wideband positive-slope linear group delay filters", ieee trans. circuits syst. i: regul. pap , vol. 69, no. 10, pp. 4258–4271, 2022. [18] x. wang, a. akbarzadeh, l. zou, and c. caloz, "real-time spectrum sniffer for cognitive radio based on rotman lens spectrum decomposer", ieee access, vol. 6, pp. 52366–52373, sep. 2018. [19] p. sepidband and k. entesari, "a cmos real-time spectrum sensor based on phasers for cognitive radios", ieee trans. microw. theo. tech., vol. 66, no. 3, pp. 1440–1451, 2018. [20] q. zhang, b. nikfal, and c. caloz, "high-resolution real-time spectrum sniffer for wireless communication", in proceedings of the ieee international symposium on electromagnetic theory, 20– 24 may 2013. [21] b. nikfal, s. gupta and c. caloz, "increased group-delay slope loop system for enhanced-resolution analog signal processing", ieee trans. microw. theo. tech., vol. 59, no. 6, pp. 1622–1628, june 2011. [22] m. a. jack, p. m. grant and j. h. collins, "the theory, design, and applications of surface acoustic wave fourier-transform processors", in proceedings of the ieee, april 1980, vol. 68, no. 4, pp. 450–468. [23] o. w. otto, "the chirp transform signal processor", 1976 ultrasonics symposium, annapolis, md, usa, 1976, pp. 365–370. [24] d. gangopadhyay, a. y. chen and d. j. allstot, "analog chirp fourier transform for high-resolution realtime wideband rf spectrum analysis", in proceedings of the 2011 ieee international symposium of circuits and systems (iscas), rio de janeiro, brazil, 2011, pp. 2441–2444. [25] joao alberto de frança ferreira, phd manuscript "contribution to the design of a real-time foruier transformer in integrated technology", 2019. https://theses.hal.science/tel-02494464 [26] l. zou, s. gupta, and c. caloz, "real-time dispersion code multiple access for high-speed wireless communications", ieee trans. wirel. commun., vol. 17, no. 1, pp. 266–281, 2018, doi: 10.1109/twc.2017.2765304 [27] i. mondal and n. krishnapura, "expansion and compression of analog pulses by bandwidth scaling of continuoustime filters", ieee trans. circuits syst. i: regul. pap., vol. 65, no. 9, pp. 2703–2714, sep. 2018. [28] b. xiang, a. kopa, z. fu and a. b. apsel, "an integrated ku-band nanosecond time-stretching system using improved dispersive delay line (ddl)", in proceedings of the ieee 12th topical meeting on silicon monolithic integrated circuits in rf systems, santa clara, ca, usa, 2012, pp. 151–154. [29] x. zhao, s. xiao and y. sun, "a fully electronic time reversal mirror system based on temporal imaging," ieee access, vol. 7, pp. 16711–16717, 2019. [30] y. kim, t. j. reck, m. alonso-delpino, t. h. painter, h.-p. marshall, e. h. bair, j. dozier, g. chattopadhyay, k.-n. liou, m.-c. f. chang, and a. tang, "a ku-band cmos fmcw radar transceiver for snowpack remote sensing", ieee trans. microw. theo. tech., vol. 66, no. 5, pp. 2480–2494, 2018. https://theses.hal.science/tel-02494464 654 h. meliani, e. avignon-meseldzija, j. anastasov, d. n. milic, p. m. ferreira [31] i. m. milosavljevic, d. p. glavonjic, d. p. krcum, s. p. jovanovic, v. r. mihajlovic, and v. m. milovanovi´c, "a 55–64-ghz fully integrated miniaturized fmcw radar sensor module for short-range applications", ieee microw.wirel. compon. lett., vol. 29, no. 10, pp. 677–679, 2019. [32] p. tortoli, f. guidi, and c. atzeni, "digital vs. saw matched filter implementation for radar pulse compression", in proceedings of the ieee ultrasonics symposium, 1994, vol. 1, pp. 199–202. [33] a. williams and f. j. taylor, electronic filter design handbook, fourth edition (mcgraw-hill handbooks). mcgraw-hill professional, 2006. (chapter 7, formula 7-6). isbn: 9780071471718 [34] suhash c. dutta, "a new lumped element bridged-t absorptive band-stop filter", facta universitatis (nis) – series : electronics and energetics, vol. 30, pp. 179–185, june 2017. [35] g. lissorgues and c. berland, "synthèse des filtres lc", techniques de l’ingénieur, no. e130, sep. 2015, doi: 10.51257/a-v1-e130 [36] p. keerthan and k. j. vinoy, "design of cascaded all pass network with monotonous group delay response for broadband radio frequency applications", iet microw., antennas p., vol. 10, no. 7, pp. 808–815, 2016. [37] p. keerthan, r. kumar and k. j. vinoy, "wide-band real-time frequency measurement using compressive receiver," in proceedings of the international conference on signal processing and communications (spcom), bangalore, india, 2016, pp. 1–5. [38] b. xiang, x. wang and a. b. apsel, "a reconfigurable integrated dispersive delay line (ri-ddl) in 0.13µm cmos process", ieee trans. microw. theo. tech., vol. 61, no. 7, pp. 2610–2619, july 2013. facta universitatis series: electronics and energetics vol. 33, no 2, june 2020, pp. 217-226 https://doi.org/10.2298/fuee2002217v © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd comparative analysis of ml and map detectors for pam constellations in awgn channel  slobodan a. vlajkov, aleksandra ž. jovanović, zoran h. perić university of niš, faculty of electronic engineering, department of telecommunications, niš, republic of serbia abstract. in this paper we perform a comparative performances analysis of “maximum a posteriori” (map) and “maximum likelihood” (ml) detectors for one-dimensional constellation in the adaptive white gaussian noise (awgn) channel. more precisely, error probabilities per symbol for the aforementioned detectors are compared for the case when the pulse amplitude modulation (pam) constellation with the equidistant and non-equiprobable constellation points is used as one-dimensional constellation. we perform analysis for different distributions of the constellation point probabilities and different values of the signal-to-noise ratio (snr). the analysis indicates which detector can be adequate choice for the certain distribution of constellation point probabilities and the snr. besides this, for the straightforward performance assessment of the map detector we derive a formula for the symbol error probability. our analysis also points out that the nonuniform distribution of the constellation points probabilities does not necessarily improve the symbol error probability. with the aim to decrease the symbol error probability we propose a method for defining constellation point probabilities. the presented results show that pam constellation designed by utilizing the method we propose significantly outperforms the conventional pam constellation in terms to the symbol error probability. key words: pam constellation, awgn channel, ml detector, map detector, symbol error probability 1. introduction one classical issue in digital communications is estimation of the symbol error probability after transmission of digital signal through the additive white gaussian noise (awgn) channel 1-17. this error probability mainly depends on the decision rule, that is, on the type of the detector. the decision rule that minimizes the probability of decision error is the “maximum a posteriori” (map) decision rule. however, the detector based on map decision rule requires the knowledge of a priori probabilities of symbols received april 14, 2019; received in revised form july 1, 2019 corresponding author: slobodan a. vlajkov faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, republic of serbia e-mail: vlajkov.slobodan@gmail.com  218 s.a. vlajkov, a.ž. jovanović, z.h. perić and also it has considerable complexity. from these reasons, the simpler detectors are desirable. one such simpler detector is the “maximum likelihood” (ml) detector that does not take into consideration the a priori probabilities of symbols 1, 2. although the topic on map and ml detection has been studied for a long time, it has not still completely investigated largely because of the complexity of the map detection. thus, the comparison of ml and map detectors for multidimensional constellations was recently performed in 3 pointing that the topic is still actual. besides this, as there have been an increasing number of studies on the constellations with the non-equiprobable symbols 3-17, the research we perform here can be meaningful in detection of these constellations. in this paper, for pam constellations with the equidistant and non-equiprobable symbols we estimate and compare the symbol error probabilities of the map and ml detectors in order to obtain answer on question which detector is suitable for certain scenario. also, we derive a formula for the symbol error probability of map detector. the formula we propose is useful for the performances estimation when signal is modulated with the nonequiprobable and equidistant pam constellation and is transmitted through the awgn channel. the choice of the constellation point probabilities considerably influences the symbol error probabilities whereby one should notice that the the unadequate choice of the constellation point probabilities can considerably increase the symbol error probability. this issue motivates us to develop a method for determining constellation points probabilities, that lead to the significantly decreased symbol error probability. we will demonstrate that the pam constellation based on method we propose outperforms some known pam constellations in terms of the symbol error probability. in order to present our research in a distinct and concise manner, in follows we firstly define the one-dimensional constellation. then we focus on the signal reception by considering in detail the ml and map detectors. finally, we propose the method for designing pam constellation with the equidistant and non-equiprobable constellation points. 2. symbol error probability for pam constellation in awgn channel as already mentioned in the introduction we investigate the performances of ml and map detectors for pam constellations in awgn channel. before we define constellation, we briefly explain the considered scenario. namely, the useful signal sent into the channel is s(t). due to transmission through the communication channel the signal is corrupted by the additive white gaussian noise n(t). then, on the channel output, that is, at the detector input there is the signal r(t) which represents the sum of the useful signal and the noise. based on the sample of the received signal r = r(kt) = s(kt) + n(kt) = ai + n, k  0, the detector makes decision about the transmitted signal. 2.1. pam constellation parameters we consider m-ary pam constellation with constant distance d between the amplitudes of adjacent constellation points ai, i = 1, 2,..., m. we also assume that constellation is symmetric, which enables us to focus on the positive part of the constellation. by following these assumptions, we formulate the expression for the constellation point amplitude as follows: comparative analysis of ml and map detectors for pam constellations in awgn channel 219 2 ,...,1 2 1 m idiai        . (1) the parameter we also define is the probability of constellation point marked with pi = p(ai). we assume pam constellation with non-equiprobable symbols, so that it holds constpi  , (2) under the constraint that the sum of probabilities of all constellation points is equal to 1:    2 1 12 m i ip . (3) finally, we define the average energy per symbol es in the following manner 1:    2/ 1 22 m i iis pae . (4) after that we formulate expressions for the average energy per bit eb 1: m e e s b 2log  (5) and the signal-to-noise ratio per bit snr 1: 0 log10 n e snr b , (6) where n0 is the spectral power density of the awgn. 2.2. map and ml decision rules the sample of the received signal is expressed analytically in the following manner: nar i  , (7) where ai is the sample of the useful signal s(t) and n is the sample of the awgn noise n(t) having gaussian probability density function with zero-mean value and variance σn 2 = n02. from (7) follows that for given ai the sample r has also the gaussian probability density function with the same variance as the noise variance, but with the mean value ai 1: 2 00 ( )1 ( ) exp ,i i r a p r a r nn            . (8) the map rule that minimizes the error probability reads 1, 2: ( ) , if ( ) ( ) fori i md r a p a r p a r m   . (9) 220 s.a. vlajkov, a.ž. jovanović, z.h. perić by applying bayesian rule on (9) we obtain a simpler form for the decision rule: ( ) ( ) fori i m mp r a p p r a p m  . (10) by using (10), (8) and (1) we derive the decision thresholds of map detector: 0 1 1 2 1 ( 1) ln , 2,..., 2 2 0, i i i m n p m m i d i d p m m          . (11) let us now define the ml decision rule 1, 2: ( ) , if ( ) ( ) fori i md r a p r a p r a m   . (12) by substituting (8) and (1) into (12) we derive the decision thresholds of ml detector: 1 2 1 ( 1) , 2,..., 2 0, i m m m i d i m m        . (13) by comparing equations (10) and (11) with equations (12) and (13) for pi = 1m one can notice the well-known fact that in the case of equiprobable symbols the map and ml decision rules are equivalent. after determining decision thresholds the following general formulation for decision rules can be assumed 1( ) , ifi i id r a m r m    . (14) to stress the difference between the ml and map decision rules, we graphically illustrate the decision thresholds in fig. 1. fig. 1 the decision thresholds for: 1) map detector mi = a for pi  1 < pi, mi = b for pi  1 = pi, mi = c for pi  1 > pi ; 2) ml detector bmi  . 2.3. formulas for symbol error probability during transmission through the channel the channel noise affects the digital signal. due to that, there is a probability that the transmitted symbol is not accurately detected. the probability that the wrong symbol is detected is called the error probability per symbol (pe). the general form for the symbol error probability of a symmetric pam constellation is 1, 2: comparative analysis of ml and map detectors for pam constellations in awgn channel 221 / 2 1 2 ( ) m e i i i p pp e a    , (15) where p(eai) represents conditional error probability per symbol: 1 1 1( ) [ , ) 1 [ , ) 1 ( ) i i m i i i i i i i i m p e a p r m m a p r m m a p r a dr                  . (16) by substituting (16), (8), (11) and (1) into (15) we derive an analytical expression for the symbol error probability: 0 1 1 20 0 / 2 1 0 01 2 10 0 2 10 2 20 erfc erfc ln 22 2 erfc ln erfc ln 2 22 2 erfc ln . 22 e m i i i i i i m m m n pd d p p d pn n n np pd d p d p d pn n pnd p d pn                                                                    (17) where erfc() is the complementary error function: 2 z 2 erfc(z) exp{ }t dt     . (18) one can notice that in the case of the ml detection, the expression for the symbol error probability gets much simpler form: 2 0 (1 )erfc 2 e m d p p n           . (19) assuming in (19) that symbols are equiprobable, we derive the known expression for the symbol error probability of the conventional pam constellation 1:          02 erfc 1 n d m m pe . (20) 3. numerical results and discussion in order to be able to quantify and compare the performances of the ml and map detectors for the previously defined scenario, for a given number of constellation points m we change other parameters of pam constellation and calculate snr and pe. we assume the number of constellation points m = 8. we define the probabilities of the constellation points on several manners. actually, we observe four cases illustrated in fig. 2. in the first case in the fig. 2 the probabilities of the constellation points are equal and amount pi = 0.125 (the uniform distribution). in the case given in the fig. 2.b the probability of the 222 s.a. vlajkov, a.ž. jovanović, z.h. perić constellation point decreases with the increase of the amplitude of the constellation point (decreasing distribution). in the third case we observe the pam constellation whose probability of constellation point increases with the constellation amplitude, so we name it the increasing distribution. graphical representation of the third case is shown in fig. 2.c. the last case is characterized with the probabilities of constellation points arranged in „zigzag‟ form, that is, the distribution of constellation points does not change monotonically with the constellation amplitude. the last case can be seen in fig. 2.d. a. b. c. d. fig. 2 distribution of the constellation point probabilities for 8-pam constellation: a) uniform distribution pi = [0.125, 0.125, 0.125, 0.125]; b) decreasing distribution pi = [0.21, 0.15, 0.1, 0.04]; c) increasing distribution pi = [0.04, 0.1, 0.15, 0.21]; d)„zigzag‟ distribution pi = [0.18, 0.07, 0.18, 0.07], where pi = [p1, p2, p3, p4]. for all presented distributions of the probabilities of constellation points and for different values of the snr, the symbol error probabilities for ml and map detectors are calculated by using (17) and (19) and listed in the table 1. in order to better distinct the difference in the performances of the ml and map detectors, we introduce the relative difference between the symbol error probabilities δ:   100100%      map e map e ml e map e e p pp p p , (21) comparative analysis of ml and map detectors for pam constellations in awgn channel 223 where pe map and pe ml are the error probabilities for map and ml detector, respectively. in fig. 3 the  in function of the snr is graphically presented. by analyzing the results presented in fig. 3 and table 1, we can derive several conclusions. in every case the error probability per symbol of map detector is lower than the corresponding one of ml detector (the known fact). for pam constellation with equiprobable symbols (see the first case) we confirm that there is no difference between the symbol error probabilities of ml and map detectors. here it should be also noticed that the first case defines the conventional pam constellation 1. for the second case, that is, when the distribution of constellation probabilities is decreasing, we observe that the relative difference between the symbol error probabilities of ml and map detectors amounts about 4.6 % for snr = 0 db and 2.5 % for snr = 20 db. besides that, the symbol error probability for both types of detectors is for three orders lower than the corresponding one in the first case. in the third case, when the distribution of probabilities is increasing, relative difference in symbol error probabilities is somewhat greater and ranges from 7.5 % to 3.2 % for the signal – to – noise ratio per bit ranging from 0 db to 20db. however, for this kind of probability distribution one should observe that the error probability for both detectors is for three orders higher than the error probability of a conventional pam. finally, the fourth case with the „zigzag‟ distribution of the constellation points probabilities the relative difference in symbol error probabilities has a significantly greater value than it is in other cases. this difference reaches 19.1% for snr = 0db and 9.2% for snr= 20db. thereby, the symbol error probability for both detectors is of the same order as the error probability of the conventional pam constellation. from fig. 3 we can also observe that curves in all cases approach the curve corresponding to the case where there is no difference between map and ml detection. this actually means that with the increase of snr the relative difference in the symbol error probability decreases. table 1 symbol error probability for ml and map detectors in function of snr: a) case 1 and case 2, b) case3 and case 4 a) pe(snr) case 1 case 2 snr[db] ml map ml map 0 0.519 0.519 0.461 0.441 5 0.299 0.299 0.201 0.194 10 0.080 0.080 0.025 0.024 15 0.002 0.002 6.9110-5 6.7310-5 20 7.9010-9 7.9010-9 1.6110-12 1.5710-12 b) pe(snr) case 3 case 4 snr[db] ml map ml map 0 0.517 0.481 0.519 0.436 5 0.337 0.320 0.277 0.243 10 0.124 0.119 0.059 0.054 15 9.3610-3 9.0510-3 9.1710-4 8.3510-4 20 6.0310-6 5.8410-6 4.3410-9 3.9710-9 224 s.a. vlajkov, a.ž. jovanović, z.h. perić fig. 3 relative difference in the symbol error probabilities of the ml and map detectors. as we have already noticed the pam constellation with the increasing distribution of the constellation point probabilities does not represent a good constellation because its symbol error probability is significantly higher than that for the conventional pam constellation. this points out that the nonuniform distribution of the constellation points probabilities does not necessarily improve the symbol error probability. because of that, determination of constellation points probabilities with the aim to reduce the symbol error probability is an important task. in this paper we propose that the constellation points probabilities follows the gaussian distribution. namely, we assume that the constellation point probability pi is equal with the probability that gaussian variable with zero mean value and unit variance belongs to segment ai  d2, ai + d2: 2 ,,1, 2 erfc 2 )1( erfc 2 1 m i iddi pi                        . (22) for m = 16 and pam constellation with equidistant constellation points whose probabilities are defined with (22) we calculate symbol error probability by utilizing (17) and tabulate the obtained results in table 2. in table 2 we also tabulate the symbol error probability of the conventional pam constellation. one can evident that the pam constellation we propose achieves significantly lower symbol error probability than it is in the case of conventional pam constellation, whereby the achieved gain grows with the snr. thus, for snr = 20 db it is reached that the symbol error probability of our pam constellation is for 2.57106 times lower than that of its conventional counterpart. furthermore, the considered pam constellation outperform the best pam constellation in 17 whose symbol error probability amounts 4.5710-6 for snr = 20 db. unlike the pam constellation defined with (22), the pam constellation in 17 is characterized with only two different constellation points probabilities, so that it represents the pam constellation of smaller complexity than it is the pam constellation proposed in this paper. comparative analysis of ml and map detectors for pam constellations in awgn channel 225 table 2 symbol error probability for 16-pam constellation based on (22) snr[db] pe pe conventional pam 0 0.515 0.712 5 0.265 0.549 10 0.051 0.311 15 5.3610-4 0.079 20 7.8610-10 2.0210-3 4. conclusion in this paper, for pam constellation with equidistant and non-equiprobable symbols the comparative analysis of the map and ml detectors has been performed. one of the results of analysis is formula for the symbol error probability of map detector. it has been also noticed that in all observed cases, except for the first one, with the increase of the signal-to-noise ratio the relative difference in the symbol error probabilities of the ml and map detectors decreases so that it can be expected that it becomes negligible for higher snr values. this means that in the channels with higher values of signal-to-noise ratio the detector of smaller complexity the ml detector can be used. the another finding is that when the probability distribution has „zigzag‟ form, the choice of the detector is of great importance since it significantly influences the symbol error probability. in such situations, the map detector is preferable solution. it has been observed that the increasing distribution of the constellation points probabilities negatively effects the symbol error probability, while the decreasing distribution decreases the symbol error probability. finally, this observation has helped us to define the method for determining constellation points probabilities. the proposed method has led to the symbol error probability of pam constellation being significantly decreased in comparison to that for the conventional pam constellation. acknowledgement: this paper was realized as a part of the projects "development and implementation of next-generation systems, devices and software based on software radio for radio and radar networks" (tr-32051) and "development of dialogue systems for serbian and other south slavic languages" (tr 32035), financed by ministry of education, science and technological development of the republic of serbia. references [1] j. g. proakis, digital communications, mcgraw-hill science, 2001. [2] p. ivaniš, d. drajić, introduction to information theory and coding (in serbain), akademska misao, 2018. [3] a. alvarado, e. agrell, f. brannstrom, "asymptotic comparison of ml and map detectors for multidimensional constellations", ieee transactions on information theory, vol. 64, no. 2, pp. 1231– 1240, 2018. [4] m. ivanov, f. brannstrom, a. alvarado, et al., "on the exact ber of bit-wise demodulators for onedimensional constellations", ieee transactions on communications, vol. 61, no. 4, pp. 1450–1459, 2013. [5] h. kuai, f. alajaji, g. takahara, "tight error bounds for nonuniform signaling over awgn channels", ieee transactions on information theory, vol. 46, no. 7, pp 2712–2718, 2000. 226 s.a. vlajkov, a.ž. jovanović, z.h. perić [6] l. wei, i. korn, "optimal m-amplitude shift keying/quadrature amplitude shift keying with non-equal symbol probabilities", iet communications, vol. 5, no. 6, pp 745–752, 2011. [7] l. wei, "optimized m-ary orthogonal and bi-orthogonal signaling using coherent receiver with non-equal symbol probabilities", ieee communications letter, vol. 16, no. 6, pp 793–796, 2012. [8] i. korn, j. p. fonseka, s. xing, "optimal binary communication with nonequal probabilities", ieee transactions on communications, vol. 51, no. 9, pp 1435–1438, 2003. [9] v. ipatov, "comments on optimal binary communication with nonequal probabilities", ieee transactions on communications, vol. 55, no. 1, pp. 231, 2007. [10] z. h. perić, "nonlinear transformation of one-dimensional constellation points in order to error probability decreasing", facta universitatis, series: electronics and energetics, vol. 11, no. 3, pp. 291– 299, 1998. [11] z. h. perić, m. s. bogosavljević, "performance of nonuniform pam constellations for gaussian channel", electronics and electrical engineering, vol. 52, no. 3, pp. 27–30, 2004. [12] z. h. perić, n. milošević, a. ž. jovanović, et al., "design of piecewise uniform pam constellation", in proceedings of the xii international saum conference on systems, automatic control and measurements, niš, serbia, november 2014, pp. 109–111. [13] z. h. perić, a. ž. jovanović, s. a. vlajkov, "comparative analysis of various pam constellations", in proceedings of the xiii international saum conference on systems, automatic control and measurements, niš, serbia, november 2016, pp. 27-30, 2016. [14] i. b. djordjevic, a. ž. jovanovic, z. h. peric, t. wang, "optimized vector-quantization-based signal constellation design (ovq-scd) for multidimensional optical transport", in proceedings of thd cleo: science and innovations, san jose, california united states, june 8-13, 2014. [15] i. b. đorđević, a. ž. jovanović, z. h. perić, t. wang, "multidimensional optical transport based on optimized vector-quantization-inspired signal constellation design", ieee transactions on communications, vol. 62, no. 9, pp. 3262–3273, 2014. [16] i. b. đorđević, a. ž. jovanović, m. cvijetić, z. h. perić, "multidimensional vector quantization-based signal constellation design enabling beyond 1 pb/s serial optical transport networks", ieee photonics journal, vol. 5, no. 4, 2013. [17] s. a. vlajkov, a. ž. jovanović, z. h. perić, "approach in companding-quantisation-inspired pam constellation design", iet communications, vol. 12, no. 18, pp. 2305–2314, 2018. facta universitatis series: electronics and energetics vol. 32, no 2, june 2019, pp. 239-247 https://doi.org/10.2298/fuee1902239r design and analysis of quadrifilar helical antenna for cube-sats using c-band frequency range for satellite communication pinku ranjan 1 , mihir patil 2 , amit bage 3 , brajesh kumar 2 , sandeep kumar p. 2 1 department of computer science & engineering, abv-indian institute of information technology and management, gwalior, madhya pradesh–474015, india 2 department of electronics and communication engineering, srm institute of science and technology, kattankulathur, chennai, tamil nadu– 603203, india 3 department of electronics and communication engineering, national institute of technology, hamirpur, himachal pradesh – 177005, india abstract. design and analysis of quadrifilar helical antenna are presented in this paper. the proposed antenna is designed for cube-sats in the low earth and medium earth orbits. it is a combination of four helical antennas, each separated by 90°, and excited separately at the feeding point. the antenna is designed for operation at 4.5 ghz with an impedance bandwidth of 11.11 %. design of the antenna is done in two steps. the first step being the design of a ground plane, which can make the antenna operate at 4.5 ghz. the second step is to analyze the antenna’s performance for different helix angles using the best ground plane dimensions obtained in the first step. the gain versus frequency curve has been obtained and the designed antenna is having a gain of more than 4 db at the resonant frequency of 4.5 ghz. key words: quadrifilar antenna, satellite communication, coaxial probe feed 1. introduction due to a huge building, assembling and launching costs of large satellites, many of the private institutions who are willing to contribute even a bit of chunk to the space exploration department are having a cube and microsatellites as their priority. in modern microwave and millimeter wave communication systems, the use of quadrifilar helical antenna is increasing day by day. this is due to the very large beam-width and high gain provided by the antenna [1-4]. it has become a major pillar for antenna design of satellite communication. even due to the evolution of electronics and vlsi technology, it is possible for small satellites to perform pretty difficult space exploration task. and thus, there is a need received september 14, 2018; received in revised form february 15, 2019 corresponding author: amit bage department of ece, srm institute of science and technology, kattankulathur, chennai, india, 603203 (e-mail: bageism@gmail.com) 240 p. ranjan, m. patil, a. bage, b. kumar and s. kumar p. felt to design small antennas suitable to fit on cube-sats. in [5] the deployable helical antennas antenna is presented for cube-sats. the deployment mechanism is used for the antenna to take as less space as possible. thus, it would require a ground plane which is also deployable to reflect out the back lobes. in some cases, this might help but, because it requires a deploying mechanism. it becomes very hard for small satellites to carry out the job with perfection. even, it could worsen the radiation pattern if not deployed properly and would thus be prone to a lot of errors. the dual-band quadrifilar helix antenna using stepped widths arms has been demonstrated in [6]. in [7] an omnidirectional antenna, sending circularly polarized waves is presented. c-band is selected for the antenna operations. because the antenna’s dimensions are very small in this band. it becomes very suitable to fit on 1u, 2u, 3u cube-sats. also, very less free space loss is incurred as compared to the x and the ku-band. adding to that going towards higher frequencies leads to more atmospheric losses. the s-band is rejected because it would require an antenna of about 14 cm in height. which, the c band is providing at about half the height. the low earth orbits have much less time for a direct line of sight communication. thus, they need to be properly oriented when the line of sight communication can be established. as one qfh antenna could serve only 180°, 2 qfh antennae are required to serve the whole 360 o view of the satellite. the antenna helices require a phase difference of 90 o between two helices. in [8] a very cost efficient and very small sized circuit is designed to give phase differenced signal, which could help to lower the burden of generating and sending out phase differenced signal. the basic design of the quadrifilar helical antenna has been demonstrated in [9]. on basis of that, an antenna is proposed and further optimized. the gain enhancement techniques have been presented in [10]. in [11] printed circuits discontinuities have been taken into account. this works as a resonating structure and thus allows only certain frequency to be received by the antenna. in 2011[12], b. pawan. k et.al. presented circularly polarized (cp) quadrifilar helix antenna (qfh).. this manuscript presents the design and analysis of the quadrifilar helical antenna. it is a combination of four helical antennas, each separated by 90 º , and excited separately at the feeding point. the antenna is operated at 4.5 ghz, with 11.11 % of impedance bandwidth. the antenna works as a circularly polarized antenna in 4.28 – 4,64 ghz. the length of the antenna is 7.5 cm and the bottom cylinder which is below the ground plane is 1 cm. while the length of the feed cylinder (above the ground plane) is 3.6 mm. the numerical simulation analysis has been carried out using ansys high-frequency structure simulator (version 15). the organization of the manuscript is as follows. in the first section, the quadrifilar helical antenna’s geometry is presented. in the second section results and discussion are presented. in the last section final conclusion has been presented. 2. antenna geometry the pitch of the helices is 15 cm and has half a turn and thus making a total length of 7.5 cm, which is 1.125λ. the helix radius is 1.15 cm. and the radius of the wire is 0.5 mm. in [13] the maximum antenna characteristics are achieved using an angle of 73°. while in this design the antenna has a helix angle of 81.28°, to attain a better radiation pattern. all the four helices are of the same dimensions. each of the helices is rotated by 90° with respect to the previous helix. the number of segments per turn is taken as 36, which is the default value. the top part design and analysis of quadrifilar helical antenna 241 of the antenna is having four cylinders, which have their axis perpendicular to the z-axis. this is to support the antenna structure from the top. these cylinders are called as top cylinders. the total height of these cylinders is 11.5 mm, and a radius of 1 mm. these values are taken such that cylinder can easily accommodate the helix into itself. the top cylinders are made up of copper. and thus, no losses are incurred into the design. four metallic rods are placed above the ground plane to support the antenna structure from down. these cylinders are called bottom cylinders. all the four rods are having a radius of 0.9 mm and height of 7.5 mm, such that it could easily accommodate the incoming helix. the four helices, the top four supporting cylinders and the bottom four supporting cylinders are united to make one antenna radiating structure. copper is assigned as the material to the structure. it is assigned a perfect e boundary condition. then below these cylindrical rods, there is a ground plane which is square shaped. below the ground plane, there are four copper rods of 0.9 mm. these cylinders are called as feed cylinders. the feed cylinders are made up of copper. the feed cylinder rods are surrounded by a teflon tube of an inner radius of 0.9 mm and outer radius of 3.018 mm. the radius is taken such that it makes a total impedance of 50 ohms. this makes any wire suitable to attach to the antenna with 50 ohms of impedance. the impedance matching plays a major role for power transmission through the antenna. the height of the feed cylinder is 3.6 mm. the height is selected so that the antenna can be easily mounted on any structure. on the bottom face of these feed cylinders, excitation is given to the ports. separate excitation is given to all the four ports. the four ports are feed with a 90° of phase shifted signal with respect to the simultaneous port. all the ports are fed in clockwise direction. the dielectric constant of teflon is 2.1. the inner copper tube is responsible for transferring the electrical signal from the wave-port to the antenna structure. the cross sections are taken as minimum as possible such that they can easily accommodate the incoming helices, to avoid losses. there are four holes subtracted from the cross-section of the ground plane of radius 0.9 mm, so as to allow the passing of the electric signals through the ground plane. fig. 1 shows the side view of the proposed antenna. fig. 2 shows only the bottom view of the ground plane. fig. 3 shows the cross-sectional view of the whole antenna. fig. 4 shows the direction of alignment for the feeds of the 4 ports of the antenna. fig. 1 side view of qfh antenna 242 p. ranjan, m. patil, a. bage, b. kumar and s. kumar p. fig. 2 bottom view of the ground plane. fig. 3 cross-section view of qfh antenna fig. 4 feed alignment of the 4 ports. 3. result and discussion the antenna’s input characteristics have been analyzed for the desired operating frequency. the ground plane dimension has been analyzed for the lowest reflection coefficient. from the simulations, as shown in fig. 5, it is found that the reflection coefficient is least for the ground plane of length 3.75 cm. it is half of the total height of the antenna. the y x z helices top cylinders ground plane bottom cylinder feed cylinders y x z design and analysis of quadrifilar helical antenna 243 antenna is simulated in hfss with the following design constraints. the maximum no. of passes taken is 6 and the maximum delta s is 0.02.the step size is kept as 0.01 so as to depict the most accurate antenna parameters. the minimum length of the ground plane for which the simulation is evaluated is 3 cm. below 3 cm the ground plane would not be able to support the helix structure. the lowest value of the reflection coefficient is -12 db at 3 cm of the ground plane, which then further decreases until the length of 3.75 cm. the lowest value at 3.75 cm ground plane is about -28.8 db. but after that, the value increases until 5 cm. the value goes up to -16.7 db and then further decreases. the value at 6 cm ground plane is about -21.4 db. but, after 6 cm of ground plane length, the resonating frequency starts to move towards 4.4 ghz. then further at 7, 8, 9, 10 cm the lowest reflection coefficient stays in between 19.5 and -20.5 db but resonating at 4.4 ghz. fig. 5 plot for reflection coefficient against frequency for the different lengths of the ground plane. after this, by keeping the length of the ground plane as 3.75 cm, further optimization is tried by calibrating its results against different helix angles. fig. 6 reflection coefficients for different helix angle with the constant ground plane of 3.75 cm. 244 p. ranjan, m. patil, a. bage, b. kumar and s. kumar p. thus, from fig. 6, it can be inferred that the antenna at the helix angle of 70º resonates at the frequency of 4.8 ghz. and at 75º the antenna resonates at the frequency of 4.4 ghz. but, after that from 80º until 85º, the resonating frequency stays at 4.5 ghz. the antenna performs best at the helix angle of 81.3º, with minimum reflection coefficient of -28.8041. the antenna helix angles are evaluated until 85º. because, above 85º it becomes impossible to mount the coaxial feed as they intersect with other feeds. the final |s11| versus frequency curve has been extracted and it is shown in fig. 7. from fig. 7, it can be inferred that it has a resonant frequency of 4.5 ghz with 11.11 % impedance bandwidth. fig. 7 reflection coefficient for the ground plane of dimension 3.75 cm and helix angle of 81.3º. the far-field analysis has been done for the proposed antenna at their resonant frequency (4.5 ghz). the radiation pattern for xz-plane and xy-plane has been shown in fig. 8 and fig. 9 respectively. the difference between co and cross-polarized is more than 15 db. the eplane view has the maximum value of e field radiation in that cross-sectional plane, which is shown in fig. 8. similarly, h-plane has the maximum value of h field radiation in that crosssectional plane, which is shown in fig. 9. thus, the antenna assures very promising radiation pattern. fig. 8 radiation pattern for the optimum antenna dimension for xz-plane (e-plane). design and analysis of quadrifilar helical antenna 245 fig. 9 radiation pattern for optimum antenna dimension for xy-plane (h-plane). fig. 10 gain (db) vs. frequency (ghz) for phi=80º and theta=110º. fig. 11 axial ratio of the antenna. 246 p. ranjan, m. patil, a. bage, b. kumar and s. kumar p. fig. 12 3-d radiation pattern of the proposed antenna. the gain versus frequency curve has been analyzed for the proposed antenna and it is shown in fig. 10. thus, it can be inferred that the antenna gives a maximum gain of 4.2254 db at phi=80º and theta=110º at resonant frequency 4.5 ghz. the antenna gain is constant throughout the operating frequency band. in fig. 11, the axial ratio of the antenna is shown. the antenna works as circular polarized antenna from 4.28-4.64 ghz.in fig. 12, 3-d radiation pattern of the proposed antenna is shown, in that the maximum gain is 4.22 dbi. the radiation efficiency of the antenna is 79 % is obtained at 4.5 ghz. the proposed antenna is compared with other quadrifilar helical antennas in table-1. it can be inferred from the data that the antenna has a very high bandwidth of 500 mhz, as compared to other designs. also, the proposed antenna has a moderate gain as compared to other designs presented in table-1. linearity in gain over the bandwidth proves very helpful. thus, the novelty in this design is the impedance bandwidth and gain of the antenna. it supports 500 mhz of bandwidth, with a linear gain of 4.22 db. this is the major advantage of the design. the design is a result of intense optimization in the antenna’s height, ground plane size and the diameter of the cylindrical rod. all this is possible with the very simple design of the antenna using the metallic rods. table 1 comparison of the proposed antenna with other antenna designs. ref. resonating frequency (ghz) bandwidth (mhz) gain (db) length of the antenna (cm) % impedance [1] 2.51 20 2.32 4183 0.0079 [11] 0.86 95 6.4 16.1 0.110 [12] 4.2 500 3.5 4.6 0.1190 [13] 1.53 200 6.2 19.5 0.1307 our work 4.5 500 4.22 7.5 0.1111 design and analysis of quadrifilar helical antenna 247 4. conclusion the quadrifilar helical antenna has been designed at 4.53 ghz resonant frequency with 11.11% impedance bandwidth (4.3 ghz to 4.8 ghz). the optimized antenna dimension has a total height of 7.5 cm with half a turn, and it performs the best at 3.75 cm x 3.75 cm of the ground plane with a helix angle of 81.3º. it gives a gain of about 4.2 db at resonant frequency 4.5 ghz at phi=80º and theta=110º. this paper shows that the qfh antenna is a very good candidate for omnidirectional on cube-sats application with a good gain. acknowledgment: the authors would like to the department of science and technology (dst), government of india, for its support through the fist project. references [1] n. bhuma and c. himabindh, “right hand circular polarization of a quadrifilar helical antenna for satellite and mobile communication systems,” recent advances in space techn. servic. and climate change 2010 (rsts & cc-2010), chennai, pp. 307–310, 2010. [2] chapari, z. h. firouzeh, r. moini and s. h. h. sadeghi, “a low weight s-band quadrifilar helical antenna for satellite communication,” in proceedings of the 13th intern. symp. on antenna techn. and applied electromag. and the canadian radio science meeting, toronto, 2009, pp. 1-3c. [3] t. cvetković, v. milutinović, n. dončov, b. milovanović, "numerical calculation of shielding effectiveness of enclosure with apertures based on em field coupling with wire structures", facta universitatis, series: electronics and energetics, vol. 28, no. 4, pp. 585–596, 2015. [4] mengmeng and h. weina, “a printed quadrifilar-helical antenna for ku-band mobile satellite communication terminal,” in proceedings of the 17th intern. conf. on comm. techn. (icct), chengdu, 2017, pp. 755–759. [5] j. costantine, y. tawk, i. maqueda, m. sakovsky, g. olson, s. pellegrino, c. g. christodoulou, “uhf deployable helical antennas for cubesats,” ieee trans. on antennas and propag., vol. 64, no. 9, pp. 3752-3759, 2016. [6] g. byun, h. choo, s. kim, “design of a dual-band quadrifilar helix antenna using stepped-width arms,” ieee trans. on antennas and propag., vol. 63, no. 4, pp. 1858–1862, april 2015. [7] j. hou, x. sun and h. yang, “design of a high gain quadrifilar helix antenna for satellite mobile communication,” in proceedings of the china-japan joint microw. conf., hangzhou, 2011, pp. 1-3. [8] m. s. ghaffarian, s. khajepour and g. moradi, “a quadrifilar helix antenna using low cost planar feeding circuit,” in proceedings of the 24th iranian conf. on electrical engg. (icee), shiraz, 2016. [9] adams, r. greenough, r. wallenberg, a. mendelovicz and c. lumjiak, “the quadrifilar helix antenna,” ieee trans. on antennas and propag., vol. 22, no. 2, pp. 173–178, 1974. [10] s. gao, q. luo, and f. zhu, “circularly polarized antennas,” hoboken, nj, usa: wiley, nov. 2013. [11] y. tawk, m. chahoud, m. fadous, j. costantineand c. g. christodoulou, “the miniaturization of a partially 3-d printed quadrifilar helix antenna,” ieee trans. on antennas and propag., vol. 65, no. 10, pp. 5043–5051, oct. 2017. [12] p. kumar, m. kumar, c. kumar, s. kumar, v. srinivasan, “integrated quadrifilar helix at c-band for spacecraft omni antenna system,” in proceedings of the ieee applied electromag. conf. (aemc), pp. 1–4, 2011. [13] z. y. zhang, l. yang, s. l. zuo, m. u. rehman, g. fu, c. zhou, “printed quadrifilar helix antenna with enhanced bandwidth,” iet microw. antennas & propag., vol. 11, pp. 732–736, 2017. 11282 facta universitatis series: electronics and energetics vol. 36, no 3, september 2023, pp. 329-341 https://doi.org/10.2298/fuee2303329g © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper performance of optimization methods for energy efficiency in cooperative communication satish kumar gannamaneni, jibendu sekhar roy school of electronics engineering, kalinga institute of industrial technology (kiit) deemed to be university, bhubaneswar-751024, odisha, india abstract. in cooperative communication the effect of channel fading can be improved by cooperation between the user terminals and the relay nodes in wireless networks. in a wireless sensor network (wsn), cooperative relaying improves the link quality with a relatively high energy efficiency gain (eeg). in this paper, optimized parameters are used in wsn to enhance the eeg using particle swarm optimization (pso) and real-coded genetic algorithm (rga). maximum enhancements of eeg obtained using rga for m-ary quadrature amplitude modulation (m-qam) is 64% for m=16, 87% for m=32, and 97% for m=64 compared to eeg obtained without optimization. the superiority proposed optimization methods are verified by comparing with results without optimization and by comparing with the published results for energy efficiency (ee). key words: cooperative communication, energy efficiency, relay, real-coded genetic algorithm, particle swarm optimization 1. introduction in cooperative communication, diversity techniques are used in a wireless network to combat the fading effects in presence of multiple users. each user terminal has a single antenna and can’t exploit spatial diversity. therefore, instead of using multiple antennas, user terminals communicate through a number of relay nodes to use a diversity technique [1-2]. using diversity techniques, in a fading environment, link quality between the source and the destination can be improved. the cooperative transmission system uses relay stations in a multi-user wireless communication environment. this type of communication system reduces the power consumption of user terminals, resulting in more battery life. the applications of cooperative communication include code division multiple access (cdma) networks, wsn, and many others. the main research problems in cooperative communication are to evaluate the performances of application based received november 14, 2022; revised february 01, 2023 and february 17, 2023; accepted february 22, 2023 corresponding author: jibendu sekhar roy school of electronics engineering, kalinga institute of industrial technology (kiit) deemed to be university, bhubaneswar-751024, odisha, india e-mail: drjsroy@kiit.ac.in 330 s. k. gannamaneni, j. s. roy cooperative networks, to improve the performances of present methods of cooperative communication and to develop new efficient methods to achieve better performances. for cooperative networks in wsns and in cognitive radio networks, low energy consumption is desired; therefore, one of the major issues in cooperative communication is energy efficiency. cooperative communication is a distributed network and hence, the data rate and the link quality between the nodes are other issues which should be enhanced. the improved performances of point-to-multipoint communication of cooperative relaying in wsns are another issue. considering cooperative communication as a distributed network, the effect of fading can be minimized for spectrum sensing and spectrum sharing in a cognitive radio network [2, 3]. in [2], the probability of missed detection in cognitive networks for rayleigh channels is reported. a survey on various cooperative networking protocols and the optimal selection methods are presented in [4]. here, the review on the ee in multi-node scenario is also described. both fixed networks and ad hoc networks can be accessed through cooperative communication. a sensor network consists of a number of closely spaced (positions are predetermined) sensor nodes, and these sensor devices are low-power and multi-functional nodes. 2. related work the wsn exploits the wireless protocol and for these battery-operated sensor nodes it is difficult to replace or recharge the batteries [5]. one can only transmit a finite amount of data with finite energy. so, the important design consideration for wsn is minimum energy consumption in the fading environment, which can be reduced using the cooperative relaying technique [6]. in [6], distributed antenna scheme is used to utilize the space diversity. optimal packet size for data transmission in wsn is presented in [7] where the ee is used for the optimization matrix. the optimum range of transmission for consumption of minimum energy is investigated in [8] for non-cooperative communication, where for periodic monitoring purposes, multi-hop routing is used to make the network energy efficient. the problem of ee of multi-node cooperative communications in wsn is presented in [9] by exploiting space time codes. in [10], the use of energy-efficient cooperative relaying for mobile-edge computing is described using a harvest-and-offload method. to achieve fairness and maximum energy in wsn, energy-efficient node selection methods are reported in [11] where an optimal partition method is used to minimize the local energy consumption. throughput maximization in a dual-hop communication network is discussed in [12], where the cooperative relays extract necessary energy by energy harvesting. various types of energy-efficient relaying techniques for cooperative communication are presented in [13, 14]. in [13], open-loop architecture is used for the selection of relays, and in [14], it is reported that for smalldistance communication, direct link is more energy efficient than using a relay. in [15] optimal power allocation in cooperative networks is discussed where an energyconstrained relay node acquires energy by rf energy harvesting. the optimization of ee is addressed in [16] for unmanned aerial vehicle (uav) applications where an algorithm is proposed to re-formulate the constrained robust optimization. the strategy of cooperative spectrum sensing in wsns, using pso, is presented in [17], where optimization is employed after analyzing the system throughput and energy consumption and establishing a mathematical model. recently the application of cooperative relay performances of optimization methods for energy efficiency in cooperative communication 331 network in underground sensor network is reported in [18], where multi-hop communication is proposed for this purpose. an algorithm, based on bit error probability, is proposed [19] to achieve significant energy saving in cooperative communication in wsn. in [20], based on improved cluster selection method, an energy-aware routing protocol is reported for cooperative multiple input multiple output (mimo) scheme in wsn. an energy-efficient cooperative communication protocol is proposed [21] for heterogeneous wsn, based on appropriate cluster head selection. for low energy consumption, a relay selection strategy, based on the asymmetry of the social network, is reported [22] for device-todevice communication. to improve the energy efficiency of the ambient rf powered wsns, an optimal resource allocation problem is proposed in [23]. the literature survey reveals that a better eeg can be obtained using optimization of the parameters for cooperative communication. optimized ee depends on different parameters related to cooperative communication and not a large number of papers are available in this area of research. in this paper, first the ee is calculated using the classical theory of cooperative communication for two nodes and a relay in a wsn using m-qam. the ee profile for this three-node system is investigated varying the distance from source to destination. then the ee is optimized using pso and rga considering the distance between the nodes, the packet length, and the modulation level as the varying parameters in optimization. the ga is probabilistic in nature and provides global optimization with less information and can be used to solve problems that have multiple objectives or constraints. the concept of pso algorithm is simple and easy to implement. the pso algorithm has robustness to control the parameters with good computational efficiency compared to other heuristic optimization techniques. the pso and rga optimized results for ee gains are compared with the eeg, obtained without optimization. parameter optimization gives more eegs both in pso and rga optimization. better results are obtained using rga optimization. in this paper, in section 3, the theoretical analysis of cooperative communication, used in this work, is described with the help of effective equations. the simulated results for ee are presented in section 4 without using any optimization. in section 5, optimization of eeg using pso and rga is described including the brief descriptions of pso and rga. the optimized results are compared with the results obtained without using any optimization and with the reported results. the conclusion is presented in section 6. 3. theoretical background of cooperative communication in order to exploit the benefits of diversity, multiple antennas are necessary at the device terminals. but in cooperative communication, instead of using a direct link from source to receiver, a relay is used to enhance the diversity gain by using single antennas at the device terminals. this networking protocol avoids using multiple antennas in users’ terminals [4]. in a wireless sensor network, many sensor nodes use spatial diversity using relay nodes. assume that in a wsn the three nodes are source (s), destination (d) and relay (r), in which source is sending data packets to destination as shown in fig. 1. in the direct link scheme (dr), source sends packets to destination directly, without using a relay and energy is consumed to support the required signal-to-noise ratio (snr). in the cooperative relay (cr) scheme, a two-phase cooperation protocol can be considered. in one phase, the source transmits a data packet to the destination, and for the channel characteristics, this data packet can be overheard by the relay. if the received 332 s. k. gannamaneni, j. s. roy packet is correct in the destination, then it acknowledges back and in this phase the relay has no function. in another phase, if the received packet cannot be decoded correctly at the destination, then it acknowledges negative feedback. here, if relay receives the data packet correctly from the source, relay sends it to the destination. else, this packet is dropped. fig. 1 general cooperative relaying model assume a flat rayleigh channel between the nodes and constant transmit power (pt) for all the nodes. the average symbol error rate (ser) is calculated using the average snr of σij with a link between two nodes 'i' and 'j' separated by a distance rij, and the modulation level b = log2m bit/symbol of m-qam modulation [14] 2 3 2(1 2 ) 1 2(2 1) 3 b ij ij b ij ser   −    = − −  − +   (1) where, ( )t ij ij o p r n   − = (1a) the path loss exponent is represented by α, and the noise components are modeled as additive white gaussian noise (awgn) with variance n0. packet error rate (per) for a link of data packet length of ‘l’ is 1 (1 ) l b ij ijper ser= − − (2) so, the per of dr is equal to the per of source to destination (sd) link and is [14] 1 (1 ) l d b sd sdper per ser= = − − (3) per of cr is performances of optimization methods for energy efficiency in cooperative communication 333 rdsrsdsrsd c perperperperperper )1( −+= (4) the ee of the system (η), defined as the ratio of the number of packet bits for successful transmission to the energy consumption, is [14] e perlp )1( − = (5) where, lp is the payload length of a packet and e is the energy consumption for sending a packet in dr or cr scheme. the loss factor of the power amplifier is β (0 <β< 1) and the consumption of power in the transmitter and the receiver is pct and pcr respectively. the bit rate is rs × b for the constant symbol rate of rs. 3.1. direct link transmission to transmit one data packet of length l, total energy consumption with the dr scheme is [14] )p + p + ) + (1(p = crctt d br l e  (6) the ee of dr is: d d pd e perl )1( − = (7) 3.2. cooperative relay transmission in this case, the total power consumption of cr for transmitting one packet can be described in three possible ways. over the sd link the probability of successful transmission is (1 − persd), the consumed power consists of the consumed power in s, (pt(1 + β) + pct) and the received power between the d and r, 2pcr [14] crctt 2p + p + ) + (1p =c totalap (8) the transmission failure probabilities over the sd and the source to relay (sr) links with probabilities of persd and persr is crctt 2p + p + ) + (1p =c totalbp (9) the event indicating re-transmission by r, for the transmission failure over the sd link is t ct cr2p (1 + ) + 2p + 3pc totalcp = (10) so the total energy consumption to transmit one data packet with cr is b c totalcsrsd b c totalbsrsd b c totalasdc r pperper r pperper r pper e )1()1( − ++ − = (11) 334 s. k. gannamaneni, j. s. roy the ee of cr is [14] c c pc e perl )1( − = (12) the eeg is the ratio of the ee of cr to that of dr and is given by [14] d c g   = (13) thus both ee and eeg vary with distance between the nodes, according to the (1a). 4. simulated results in this section, the simulation for cooperative communication is performed using the analytical method, described in the previous section. the system parameters, like, link distance, packet size and modulation level affect the ee and in simulation these are varied. matlab r2016a is used and when varying one of these parameters, and others are constant. the nodes s, r, and d are assumed to lie on a straight line and the relay to destination (rd) distance is expressed as rrd = q × rsd (0 0.5 otherwise (14) new offsprings are: offspring1 = [(1 + h)parent1 + (1 − h)parent2]/2 offspring2 = [(1 − h)parent1 + (1 + h)parent2]/2 (15) some randomly selected chromosomes are used for the mutation with mutation operator ‘η’ and mutation weight ‘p’, where, if r 0.5 otherwise (16) the pso algorithm or search technique, another type of evolutionary algorithm, is used to find the best settings or parameters required to maximize a desired objective [27, 28]. in pso, each single solution in the search space of an objective function is known as a bird or particle, and the set of random particles is the initial swarm. the particles can evaluate their actual positions or fitness using the optimization functions. randomly generated solutions (swarms) propagate in the design space towards the optimal solution over a number of iterations. the velocity of each particle is updated by its own best position solution which is particle best (pbest) and the best value that is tracked by the particle swarm optimizer, obtained till now by any particle is global best (gbest). the swarm will converge towards optimal positions by updating its information after each iteration. each particle has a position vector and velocity vector . individual knowledge of a particle pbest, its own best-so-far position, and social knowledge gbest is the pbest value in swarm. in pso the velocity update equation is [27] (17) and the position update equation is performances of optimization methods for energy efficiency in cooperative communication 337 (18) where, i number of iterations, vi particle velocity at ith iteration, xi current particle position or solution, w inertia weight factor, a random number between (0,1), c1 cognitive parameter and c2 social parameter, generally, c1 + c2 = 4. the particle updates its velocity and positions using the above stated procedures at every iteration to obtain the best solution. rga works with continuous real-valued variables to optimize the cost function through genetic recombination and natural selection. after mutation has taken place, the fitness is evaluated. then the old generation is replaced completely or partially. the different steps to implement the rga for ee and eeg optimization are as follows. step1: initialization of variables, like, distance between the nodes, level of modulation, packet length. then lower and upper bounds of these parameters are defined along with population size, no of generations and mutation rate. step-2: calculate fitness using objective function (7). step-3: process of selection, and arithmetic cross over, mutation, and calculation of temporary fitness. step-4: repeat step 3 until the population has converged. step 5: select the best fitness value where cost function of (7) is minimum to get maximum eeg according to (13). the different steps for the implementation of matlab code for pso optimization for ee are as follows. step-1: initialization of pso variables, like, population size, number of iterations, inertia weight, personal and global learning coefficients and velocity limits. step-2: random initialization of particle position and velocity. step-3: calculate fitness using objective function of (7) for each particle for personal and global best solution. step-4: update position and velocity of each particle using (17) and (18) and repeat step 3, 4 until the population has converged. step-5: select the global best solution where cost function (7) is minimum to get maximum eeg according to (13). the ee of dr, given by (7) is the cost function for pso and rga optimization. the goal is to minimize the cost function of (7) which will result in the maximization of eeg, according to (13). both in pso and rga, the population size is 20 and the number of iterations is 300 and the distance varied from 20 m to 200 m, modulation level varied from 4 to128, packet length is varied from 40 to 120 bits, mutation rate is 0.1. the optimized results for ee using pso and rga are compared with the results without any optimization in table 1. the pso and rga optimized results for eeg for different modulations (m-qam) m=16 and m=32 and for q=0.7 are compared with the results for without optimization in fig. 5. (a) m=16 (b) m=32 fig. 5 eeg vs. source to destination distance 338 s. k. gannamaneni, j. s. roy table 1 performance comparison of optimization methods for ee m value for m-qam sd distance (x20 m) ee without optimization (mbit/j) ee using pso (mbit/j) ee using rga (mbit/j) m=16 6 12.55 13.81 15.59 7 10.26 11.29 12.75 8 8.145 8.959 10.11 9 6.161 6.777 7.65 10 4.307 4.738 5.348 m=32 6 12.93 14.23 16.06 7 9.865 10.85 12.25 8 7.022 7.724 8.719 9 4.429 4.871 5.499 10 2.321 2.553 2.882 m=64 6 12.02 13.22 14.93 7 8.077 8.885 10.03 8 4.573 5.03 5.678 9 1.979 2.177 2.457 10 0.61 0.671 0.758 the cost function values for pso optimization and rga optimization for different values of ‘m’ for a m-qam modulation scheme are plotted in fig. 6. number of iterations used both for pso and rga optimization is 300. (a) pso (b) rga fig. 6 cost function for pso and rga optimization the comparison of results is tabulated in table 2. the results in table 2 for analytical method, pso and rga optimization are based on the parameters [24] described above. performances of optimization methods for energy efficiency in cooperative communication 339 table 2 performance comparison of optimization methods for eeg m value for mqam sd distance (x20 m) eeg without optimization eeg using pso eeg enhancement by pso eeg using rga eeg enhancement by rga m=16 6 1.189 1.246 4.8% 1.37 15% 7 1.587 1.765 11% 1.941 22% 8 2.584 3.133 21% 3.447 33% 9 5.306 7.133 34% 7.846 48% 10 13.89 20.73 49% 22.8 64% m=32 6 1.565 1.735 11% 1.909 22% 7 2.789 3.423 23% 3.765 35% 8 6.845 9.484 39% 10.43 52% 9 23.71 36.91 56% 40.6 71% 10 117 199 70% 219 87% m=64 6 2.684 3.275 22% 3.603 34% 7 7.719 10.84 40% 11.92 54% 8 36.44 58.25 60% 64.07 76% 9 313.2 545 74% 600 92% 10 7019 12580 79% 13840 97% according to the table above, eeg using pso for m-qam improves from 4.8% to 49% for m = 16, 11% to 70% for m = 32, and 22% to 79% for m = 64 when compared to eeg obtained without optimization. similarly, the improvements of eeg using rga is from 15% to 64% for m=16, 22% to 87% for m=32 and 34% to 97% for m=64 for the minimum and maximum distances between the source and the destination compared to eeg obtained without optimization. the percentage enhancements of eegs, obtained by optimization methods using pso and rga, are compared with the eeg obtained without using optimization and are shown in fig. 7. (a) pso (b) rga fig. 7 percentage enhancement of eeg using pso and rga optimizations the optimized results for ee using pso and rga are compared with the published results in [14], [29] and [30] in fig. 8. in [29], energy harvesting technology is used in 340 s. k. gannamaneni, j. s. roy cooperative communication using battery power in relay system. in [30], energy efficient relaying heterogeneous cooperative communication is proposed for radio access network. fig. 8 comparison of optimized ee with published results from fig. 8, it is evident that the optimized results using pso and rga show better results for ee. 6. conclusion optimization of ee for a three-node incremental relaying cooperative system in a wireless sensor network is presented in this paper. results obtained by the analytical method are compared with the optimized results using pso and rga. the distance is varied up to 200m and the profile of eeg is estimated. up to a distance of 100m between the source and the destination, there is not a big deviation between analytical results and optimized results. the effects of packet size, modulation level (for m-qam modulation) and distance on ee are simulated. both pso and rga optimization results are better than the analytical method for eeg for distances greater than 100m. but the highest eeg is achieved using rga optimization. also the comparison of the previously published results shows that the optimization methods provide better energy efficient cooperative communication. the limitation of this work lies in the fact that only three nodes are used in this work, and in future, this work will be extended to a large number of sensor nodes. references [1] a. nosratinia, t. e. hunter and a. hedayat, "cooperative communication in wireless networks", ieee commun. mag., vol. 42, no. 10, pp. 74-80, 2004. [2] w. zhang and k. b. letaief, "cooperative communications for cognitive radio networks", proceedings of the ieee, vol. 97, no. 5, pp. 878-93, may 2009. [3] r. deka, s. chakraborty and j. s. roy, "optimization of spectrum sensing in cognitive radio using genetic algorithm", fu: elec. energ., vol. 25, no. 3, pp. 235-243, dec. 2012. [4] m. asshad, s. a. khan, a. kavak, k. küçük and d. l. msongaleli, "cooperative communications using relay nodes for next-generation wireless networks with optimal selection techniques: a review", trans.elect. electron. eng., vol. 14, no. 2, pp. 658-669, 2019. performances of optimization methods for energy efficiency in cooperative communication 341 [5] f. akyildiz, w. su, y. sankarasubramaniam and e. cayirci, "a survey on sensor networks", ieee commun. mag., vol. 40, no. 8, pp. 102-105, 2002. [6] j. n. laneman, d. n. c. tse and g. w. wornell, "cooperative diversity in wireless networks: efficient protocols and outage behavior", ieee trans. information theory, vol. 50, no. 12, pp. 3062-3080, 2004. [7] y. sankarasubramaniam, i. f. akyildiz and s. w. mclaughlin, "energy efficiency based packet size optimization in wireless sensor networks", in proceedings of the first ieee international workshop on sensor network protocols and applications, 11 may, anchorage, ak, usa, 2003, pp. 1-8. [8] r. zhang and j. gorce, "optimal transmission range for minimum energy consumption in wireless sensor networks", in proceedings of the ieee wireless communications and networking conference, las vegas, nevada, usa, mar. 31-apr. 3 2008, pp. 757-762. [9] s. k. jayaweera, "virtual mimo-based cooperative communication for energy-constrained wireless sensor networks", ieee trans. wireless commun., vol. 5, no. 5, pp. 984-989, may 2006. [10] s. mao, j. wu, l. liu, d. lan and a. taherkordi, "energy-efficient cooperative communication and computation for wireless powered mobile-edge computing", ieee syst. j., vol. 16, no. 1, pp. 287-298, march 2022. [11] z. sheng, c. mahapatra, v. c. m. leung, m. chen and p. k. sahu, "energy efficient cooperative computing in mobile wireless sensor networks", ieee trans. cloud comput., vol. 6, no. 1, pp. 114-126, jan. 2018. [12] p. ramezani and a. jamalipour, "throughput maximization in dual-hop wireless powered communication networks", ieee trans. vehicular technol., vol. 66, no. 10, pp. 9304-9312, oct. 2017. [13] m. m. fareed and m. uysal, "on relay selection for decode-and-forward relaying", ieee trans. wireless commun., vol. 8, no. 7, pp. 3341-3346, july 2009. [14] s. wang and j. nie, "energy efficiency optimization of cooperative communication in wireless sensor networks", eurasip j. wireless commun. netw., vol. 2010, article id 162326, pp. 1-8, may 2010. [15] f. k. ojo, d. o. akande and m. f. m. salleh, "optimal power allocation in cooperative networks with energy-saving protocols", ieee trans. vehicular technol., vol. 69, no. 5, pp. 5079-5088, may 2020. [16] s. zhang, j. zhou, d. tian, z. sheng, x. duan and v. c. m. leung, "robust cooperative communication optimization for multi-uav-aided vehicular networks", ieee wireless commun. lett., vol. 10, no. 4, pp. 780-784, april 2021. [17] y. cao and h. pan, "energy-efficient cooperative spectrum sensing strategy for cognitive wireless sensor networks based on particle swarm optimization", ieee access, vol. 8, pp. 214707-214715, 2020. [18] r. kanthavel, s. i. priyadharshini, d. sudha, k. s. velrani and r. dhaya, "multi-hoped cooperative communication-based wireless underground sensor network design", int. j. commun. syst., vol. 35, no. 10, pp. 1-20, july 2022. [19] k. senthil kumar and r. amutha, "an algorithm for energy efficient cooperative communication in wireless sensor networks", ksii trans. internet and information syst., vol. 10, no. 7, pp. 3080-3099, july 2016. [20] k. c. reddy, g. d. devanagavi and t. m. n., "earpc – energy aware routing protocol for cooperative mimo scheme in wsns", j. telecommun. inform. technol., vol. 3, pp. 22–27, 2020. [21] g. e. r. patil and m. n. thippeswamy, "eecph: energy efficient cooperative communication protocol for heterogeneous wireless sensor networks", j. math. comput. sci., vol. 11, no. 3, pp. 3317-3330, 2021. [22] l. guo, z. zhu, f. c. m. lau, y. zhao and h. yu, "joint security and energy-efficient cooperative architecture for 5g underlaying cellular networks", symmetry, vol.14, p. 1160, 2022. [23] t. liu, x. qu, w. tan and y. cheng, "an energy efficient cooperative communication scheme in ambient rf powered sensor networks", ieee access, vol. 7, pp. 86545-86554, july 2019. [24] mica2 datasheet, crossbow technology [eb/ol], 2008. available: [25] https://www.yumpu.com/en/document/view/12396495/mica2-datasheet-crossbow-technology [26] k. deb and a. kumar, "real-coded genetic algorithms with simulated binary crossover: studies on multimodal and multiobjective problems", complex syst., vol. 9, no. 6, pp. 431-454, 1995. [27] r. l. haupt and s. e. haupt, practical genetic algorithms. new york: wiley, 2nd ed., 2004. [28] j. kennedy and r. eberhart, "particle swarm optimization", in proceedings of the ieee international conference on neural networks, san francisco, usa, 1995, pp. 1942-1948. [29] a. deb, j. s. roy and b. gupta, "performance comparison of differential evolution, particle swarm optimization and genetic algorithm in the design of circularly polarized microstrip antennas", ieee trans. antennas propag., vol. 62, no. 8, pp. 3920-3928, aug, 2014. [30] i. s. umayya, a. aprilya, m. c. mayarakaca, m. milchan, y. moegiharto and h. briantoro, "energy efficiency of the cooperative communication systems with energy harvested at source and relay using battery power at relay", in proceedings of the international electronics symposium (ies), 2022, pp. 216-219. [31] g. lim and l. j. cimini, "energy-efficient cooperative relaying in heterogeneous radio access networks", ieee wireless commun. lett., vol. 1, no. 5, pp. 476-479, oct. 2012. fuee20260103r 13520-69195-1-le 041_053.indd facta universitatis ser.: elec. energ. vol. 27, no. 4, may 2025, pp. 99-111 https://doi.org/ original scientific paper optimum chebyshev lowpass filter with a pair of imaginary axis zeros nikola stojanović1, ivan krstić2, negovan stamenković3 1university of nǐs, faculty of electronic engineering 2university of kragujevac, faculty of engineering 3university of prǐstina, faculty of natural science and mathematics orcid ids: nikola stojanović https://orcid org/0000-0003-3723-8840 ivan krstić https://orcid org/0000-0001-7583-3152 negovan stamenković https://orcid org/0000-0003-4025-5342 abstract: the paper compares the characteristics of optimum chebyshev filters with a finite transmission zero pair of arbitrary multiplicity to those of optimum chebyshev allpole filters. by introducing a transmission zero pair (single or multiple) at a real frequency into the transcendental form of the chebyshev polynomial, the filter achieves a specified minimum attenuation extreme value in the stopband, thereby improving the cutoff slope. additionally, the paper presents a new method for deriving a rational polynomial form of the optimum chebyshev filtering function from its transcendental form, which is essential for determining the poles of the filter’s transfer function. the method is straightforward and does not rely on optimization or recursive formulas. the proposed approach is validated and illustrated using an example. although this approximation is primarily intended for microwave filter applications, it can also be applied to both analog and digital signal processing. key words: optimum chebyshev filters, finite transmission zeros, multiple zeros, halfpower bandwidth. 1. introduction in recent publications [1–4], the authors proposed an optimum chebyshev (c) approximation to design all-pole lowpass filters. optimum c filters are a variant of c filters that offer an optimum solution for both analog and digital signal processing, where manuscript received on mart 25, 2025. corresponding author: n. stojanović university of nǐs, faculty of electronic engineering. e-mail: nikola.stojanovic@elfak.ni.ac.rs. 99 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 41 53 https://doi.org/10.2298/fuee2601041s nikola stojanović1, ivan krstić2, negovan stamenković3 received march 4, 2025; accepted april 23, 2025 corresponding author: nikola stojanović university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia e-mail: nikola.stojanovic@elfak.ni.ac.rs 1university of niš, faculty of electronic engineering, niš, serbia 2university of kragujevac, faculty of engineering, kragujevac, serbia 3university of priština, faculty of natural science and mathematics, serbia abstract. the paper compares the characteristics of optimum chebyshev filters with a finite transmission zero pair of arbitrary multiplicity to those of optimum chebyshev allpole filters. by introducing a transmission zero pair (single or multiple) at a real frequency into the transcendental form of the chebyshev polynomial, the filter achieves a specified minimum attenuation extreme value in the stopband, thereby improving the cutoff slope. additionally, the paper presents a new method for deriving a rational polynomial form of the optimum chebyshev filtering function from its transcendental form, which is essential for determining the poles of the filter’s transfer function. the method is straightforward and does not rely on optimization or recursive formulas. the proposed approach is validated and illustrated using an example. although this approximation is primarily intended for microwave filter applications, it can also be applied to both analog and digital signal processing. key words: optimum chebyshev filters, finite transmission zeros, multiple zeros, halfpower bandwidth. © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper optimum chebyshev lowpass filter with a pair of imaginary axis zeros orcid ids: nikola stojanović https://orcid org/0000-0003-3723-8840 ivan krstić https://orcid org/0000-0001-7583-3152 negovan stamenković https://orcid org/0000-0003-4025-5342 100 n. stojanović, i. krstić, n. stamenković the magnitude response of the transfer function is of primary interest. key features of this approximation include minimum return loss within the half-power bandwidth and maximum out-of-band rejection. in other words, the extremal properties of the chebyshev approximation are preserved. since the characteristic function of the lowpass filter1 represents the ratio of reflected power to transmitted power, the ripple factor minimizes the area below the characteristic function within the half-power passband. the value of the optimum ripple factor, εo, is unique for a given filter degree, whether even or odd, and the transfer functions of the optimum c filters can be systematically cataloged [1]. no all-pole transfer function offers a lower (or equal) return loss with a steeper cutoff slope. the small value of εo leads to reduced out-of-band attenuation. for example, the ripple factor of the optimum 7th degree c all-pole filter is only εo = 0.0935 and decreases as the filter degree increases. therefore, it is necessary to improve out-ofband attenuation while preserving the passband ripple at εo. one or more pairs of poles can be added to its characteristic function to enhance the performance of the stopband. these poles may be distinct or coincident. there are two approaches to incorporating poles into the optimum c characteristic function, depending on whether it is expressed in polynomial or transcendental form. in the first approach [5–8], a pair of transmission zeros of multiplicity m at the real frequency ω = ±jω0 is introduced into the characteristic function of the optimum c filter, modifying it as follows: ψn(ω) = ε2oc 2 n(ω)(ω 2 0 − 1)2m/(ω2 − ω2 0) 2m. this modification preserves the filter degree n and the ripple bandwidth ωr = 1. to determine the pole pair ±ω0 of the characteristic function, which also serves as a transmission zero pair, two nonlinear equations must be solved while ensuring the minimum stopband attenuation is satisfied. as a result, the passband ripples are no longer equal but increase toward the passband edge. this approach to improving stopband performance comes at the cost of distorting the extremal properties of the chebyshev polynomial. the second approach involves the approximation of generalized c filters [9–13], which exhibit equiripple characteristics in both the passband and stopband. in this case, the filtering function of degree n takes the form of a generalized c filtering function: cn(ω) = cosh { ∑n i=1 acosh [(ω ωi − 1)/(ωi − ω)]}, where ωi represents the position of the ith transmission zero [14]. some transmission zeros may coincide at the same location (ωi = ω0), while others may be at infinity. an optimization process is required to determine the number and positions of the transmission zeros. then, a recursive technique is employed to generate the generalized c transfer and reflection rational polynomials given to the determined driving point impedance of a doubly terminated lc ladder network. ultimately, this approach results in a lossless coupling matrix resonator network that functions as a microwave bandpass filter [14]. it can be concluded that generalized chebyshev filters preserve the extremal properties of c polynomials and are primarily designed for microwave filter applications, particularly in coupling matrix resonator networks. consequently, this approximation is unsuitable for improving the out-of-band attenuation of optimum c filters, as their application is not limited to microwave filters but extends to all types of filters where the magnitude 1the characteristic function of the chebyshev filter is ψn(ω2) = pr pl = ε3c2 n(ω), where pr is reflected power and pl is transmitted power. optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 101 response is of primary importance. the primary objective of this paper is to enhance the out-of-band rejection of an optimum c all-pole filter by introducing a pair of transmission zeros (single or multiple) in its transcendental form. the attenuation level of the out-of-band lobe is determined by the position of the transmission zero, which is computed using the newton-raphson method to solve a system of nonlinear equations. this approach ensures that the extremal properties of the chebyshev filtering function are preserved. explicit rational polynomial expressions are derived for the transcendental c function of arbitrary degree, incorporating a pair of transmission zeros with arbitrary multiplicity. the proposed mathematical framework is presented in detail. a multiple transmission zero pair is used because it allows the odd-degree lc ladder network to be both symmetrical and reciprocal. the validity and efficiency of the proposed method are demonstrated by approximating a seventh-degree rational optimum c filter with a single pair, double pair, and triple pair of real transmission zeros. the properties of these filters are tabulated, and a comparative analysis is provided for all optimum seventh-degree c filters, including the all-pole filter. 2. rational optimum c filters approximation the squared magnitude of the transmission coefficient of the optimum c filter, representing the ratio of the transmitted power, pl, to the power available from the source, pa, is given by |s21 (jω)|2 = pl pa = 1 1 + [ εocn ( ω ωr )]2 , (1) where cn(ω/ωr) = cosh[n acosh(ω/ωr)] represents the transcendental form of the c filtering function. when multiplied by εo, this function becomes the optimum all-pole c filtering function. here, εo is the ripple factor derived for the optimum c filters [1], while ωr is the ripple bandwidth, which normalizes the argument of the characteristic function to make it dimensionless. 2.1. filtering function derivation the magnitude correction of the transmission coefficient of the optimum c filter to enhance out-of-band rejection begins by introducing a symmetric pole pair of multiplicity m into the transcendental form of the nth degree c filtering function (1), as follows: cn,m ( ω ωr ) = cosh { (n− 2m) acosh ( ω ωr ) +m acosh [ α ( ω ωr )] +m acosh [ ᾱ ( ω ωr )]} (2) where α ( ω ωr ) = ω ωr χ− 1 χ− ω ωr and ᾱ ( ω ωr ) = ω ωr χ+ 1 χ+ ω ωr 42 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 43 100 n. stojanović, i. krstić, n. stamenković the magnitude response of the transfer function is of primary interest. key features of this approximation include minimum return loss within the half-power bandwidth and maximum out-of-band rejection. in other words, the extremal properties of the chebyshev approximation are preserved. since the characteristic function of the lowpass filter1 represents the ratio of reflected power to transmitted power, the ripple factor minimizes the area below the characteristic function within the half-power passband. the value of the optimum ripple factor, εo, is unique for a given filter degree, whether even or odd, and the transfer functions of the optimum c filters can be systematically cataloged [1]. no all-pole transfer function offers a lower (or equal) return loss with a steeper cutoff slope. the small value of εo leads to reduced out-of-band attenuation. for example, the ripple factor of the optimum 7th degree c all-pole filter is only εo = 0.0935 and decreases as the filter degree increases. therefore, it is necessary to improve out-ofband attenuation while preserving the passband ripple at εo. one or more pairs of poles can be added to its characteristic function to enhance the performance of the stopband. these poles may be distinct or coincident. there are two approaches to incorporating poles into the optimum c characteristic function, depending on whether it is expressed in polynomial or transcendental form. in the first approach [5–8], a pair of transmission zeros of multiplicity m at the real frequency ω = ±jω0 is introduced into the characteristic function of the optimum c filter, modifying it as follows: ψn(ω) = ε2oc 2 n(ω)(ω 2 0 − 1)2m/(ω2 − ω2 0) 2m. this modification preserves the filter degree n and the ripple bandwidth ωr = 1. to determine the pole pair ±ω0 of the characteristic function, which also serves as a transmission zero pair, two nonlinear equations must be solved while ensuring the minimum stopband attenuation is satisfied. as a result, the passband ripples are no longer equal but increase toward the passband edge. this approach to improving stopband performance comes at the cost of distorting the extremal properties of the chebyshev polynomial. the second approach involves the approximation of generalized c filters [9–13], which exhibit equiripple characteristics in both the passband and stopband. in this case, the filtering function of degree n takes the form of a generalized c filtering function: cn(ω) = cosh { ∑n i=1 acosh [(ω ωi − 1)/(ωi − ω)]}, where ωi represents the position of the ith transmission zero [14]. some transmission zeros may coincide at the same location (ωi = ω0), while others may be at infinity. an optimization process is required to determine the number and positions of the transmission zeros. then, a recursive technique is employed to generate the generalized c transfer and reflection rational polynomials given to the determined driving point impedance of a doubly terminated lc ladder network. ultimately, this approach results in a lossless coupling matrix resonator network that functions as a microwave bandpass filter [14]. it can be concluded that generalized chebyshev filters preserve the extremal properties of c polynomials and are primarily designed for microwave filter applications, particularly in coupling matrix resonator networks. consequently, this approximation is unsuitable for improving the out-of-band attenuation of optimum c filters, as their application is not limited to microwave filters but extends to all types of filters where the magnitude 1the characteristic function of the chebyshev filter is ψn(ω2) = pr pl = ε3c2 n(ω), where pr is reflected power and pl is transmitted power. optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 101 response is of primary importance. the primary objective of this paper is to enhance the out-of-band rejection of an optimum c all-pole filter by introducing a pair of transmission zeros (single or multiple) in its transcendental form. the attenuation level of the out-of-band lobe is determined by the position of the transmission zero, which is computed using the newton-raphson method to solve a system of nonlinear equations. this approach ensures that the extremal properties of the chebyshev filtering function are preserved. explicit rational polynomial expressions are derived for the transcendental c function of arbitrary degree, incorporating a pair of transmission zeros with arbitrary multiplicity. the proposed mathematical framework is presented in detail. a multiple transmission zero pair is used because it allows the odd-degree lc ladder network to be both symmetrical and reciprocal. the validity and efficiency of the proposed method are demonstrated by approximating a seventh-degree rational optimum c filter with a single pair, double pair, and triple pair of real transmission zeros. the properties of these filters are tabulated, and a comparative analysis is provided for all optimum seventh-degree c filters, including the all-pole filter. 2. rational optimum c filters approximation the squared magnitude of the transmission coefficient of the optimum c filter, representing the ratio of the transmitted power, pl, to the power available from the source, pa, is given by |s21 (jω)|2 = pl pa = 1 1 + [ εocn ( ω ωr )]2 , (1) where cn(ω/ωr) = cosh[n acosh(ω/ωr)] represents the transcendental form of the c filtering function. when multiplied by εo, this function becomes the optimum all-pole c filtering function. here, εo is the ripple factor derived for the optimum c filters [1], while ωr is the ripple bandwidth, which normalizes the argument of the characteristic function to make it dimensionless. 2.1. filtering function derivation the magnitude correction of the transmission coefficient of the optimum c filter to enhance out-of-band rejection begins by introducing a symmetric pole pair of multiplicity m into the transcendental form of the nth degree c filtering function (1), as follows: cn,m ( ω ωr ) = cosh { (n− 2m) acosh ( ω ωr ) +m acosh [ α ( ω ωr )] +m acosh [ ᾱ ( ω ωr )]} (2) where α ( ω ωr ) = ω ωr χ− 1 χ− ω ωr and ᾱ ( ω ωr ) = ω ωr χ+ 1 χ+ ω ωr 42 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 43 102 n. stojanović, i. krstić, n. stamenković and χ is a dimensionless coefficient. this normalization ensures that the arguments of both hyperbolic functions are also dimensionless. in particular, if χ approaches infinity or if m = 0, then (2) reduces to the filtering function c of an all-pole filter. since εo is associated with the optimum c filter, the function εocn,m(ω) represents the filtering function of the rational optimum c filter. without loss of generality, ωr can be set to one, ensuring that cn,m(1) = 1. the multiple pole pair of the c filtering function (2) is located at an out-of-band frequency, producing a lobe. the frequency response shows ωm, where the lobe reaches a local minimum attenuation. by setting the first derivative of (2) to zero, the frequency ωm can be determined in closed form as: ωm = ±  χ2 + 2mχ  χ2 − 1 n− 2m , (3) where ωr = 1. the coefficient χ serves as a degree of freedom to adjust the minimum out-of-band insertion loss level (ils in db). its value is obtained by solving the equation εocn,m(ωm) = amin, where amin = √ 10ils/10 − 1. the process of determining χ such that the filtering function (2) produces amin/εo at frequency ωm is iterative [15]. given specified values of n and m, the two unknowns, χ and ωm, may be determined numerically by solving two nonlinear equations. these nonlinear equations can be expressed as: f1(χ, ωm) =χ2 + 2mχ  χ2 − 1 n− 2m − ω2 m = 0 f2(χ, ωm) =cn,m(ωm) + amin εo = 0 (4) the newton-raphson iterative formula can be applied to solve this system of nonlinear equations. in kth iteration, the solution is given by  χ(k+1) ω (k+1) m  =  χ(k) ω (k) m  −   ∂f1(χ (k), ω (k) m ) ∂χ ∂f1(χ (k), ω (k) m ) ∂ωm ∂f2(χ (k), ω (k) m ) ∂χ ∂f2(χ (k), ω (k) m ) ∂ωm   −1 ×  f1(χ (k), ω (k) m ) f2(χ (k), ω (k) m )  (5) the initial value χ(0) can be any value greater than one, while ω (0) m is determined by substituting χ(0) into f1(χ (0), ωm). note that the newton-raphson method is implemented by the mathematica’s built-in function findroot. this procedure can be applied to filtering functions with an arbitrary passband ripple. however, if εo is used to calculate amin, then cn,m(ω) is considered the optimum filtering function. 2.2. rational polynomial derivation once χ is determined, the rational polynomial must be derived from the transcendental form of the characteristic function (2) to obtain the transfer function (1). the filtering 44 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 45 102 n. stojanović, i. krstić, n. stamenković and χ is a dimensionless coefficient. this normalization ensures that the arguments of both hyperbolic functions are also dimensionless. in particular, if χ approaches infinity or if m = 0, then (2) reduces to the filtering function c of an all-pole filter. since εo is associated with the optimum c filter, the function εocn,m(ω) represents the filtering function of the rational optimum c filter. without loss of generality, ωr can be set to one, ensuring that cn,m(1) = 1. the multiple pole pair of the c filtering function (2) is located at an out-of-band frequency, producing a lobe. the frequency response shows ωm, where the lobe reaches a local minimum attenuation. by setting the first derivative of (2) to zero, the frequency ωm can be determined in closed form as: ωm = ±  χ2 + 2mχ  χ2 − 1 n− 2m , (3) where ωr = 1. the coefficient χ serves as a degree of freedom to adjust the minimum out-of-band insertion loss level (ils in db). its value is obtained by solving the equation εocn,m(ωm) = amin, where amin = √ 10ils/10 − 1. the process of determining χ such that the filtering function (2) produces amin/εo at frequency ωm is iterative [15]. given specified values of n and m, the two unknowns, χ and ωm, may be determined numerically by solving two nonlinear equations. these nonlinear equations can be expressed as: f1(χ, ωm) =χ2 + 2mχ  χ2 − 1 n− 2m − ω2 m = 0 f2(χ, ωm) =cn,m(ωm) + amin εo = 0 (4) the newton-raphson iterative formula can be applied to solve this system of nonlinear equations. in kth iteration, the solution is given by  χ(k+1) ω (k+1) m  =  χ(k) ω (k) m  −   ∂f1(χ (k), ω (k) m ) ∂χ ∂f1(χ (k), ω (k) m ) ∂ωm ∂f2(χ (k), ω (k) m ) ∂χ ∂f2(χ (k), ω (k) m ) ∂ωm   −1 ×  f1(χ (k), ω (k) m ) f2(χ (k), ω (k) m )  (5) the initial value χ(0) can be any value greater than one, while ω (0) m is determined by substituting χ(0) into f1(χ (0), ωm). note that the newton-raphson method is implemented by the mathematica’s built-in function findroot. this procedure can be applied to filtering functions with an arbitrary passband ripple. however, if εo is used to calculate amin, then cn,m(ω) is considered the optimum filtering function. 2.2. rational polynomial derivation once χ is determined, the rational polynomial must be derived from the transcendental form of the characteristic function (2) to obtain the transfer function (1). the filtering optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 103 function can be simplified using the hyperbolic addition formula: acosh(α)+acosh(ᾱ) = acosh(γ), where α and ᾱ are defined in equation (2), and γ is given by γ = αᾱ+ √ (α2 − 1)(ᾱ2 − 1). (6) after simple manipulation, the following expression for γ (ω) can be derived: γ(ω) = ω2 ( 2χ2 − 1 ) − χ2 χ2 − ω2 , (7) and (2) can be rewritten in a simplified form as cn,m(ω) = cosh [ (n− 2m) acosh(ω) +m acosh(γ) ] . (8) using the identity acosh(x) = log ( x+ √ x2 − 1 ) , the following expression is obtained cn,m(ω) = cosh [ (n− 2m) log ( ω + √ ω2 − 1 ) +m log ( γ + √ γ2 − 1 )] , (9) or in a more compact form cn,m(ω) = cosh { log [( ω + √ ω2 − 1 )n−2m × ( γ + √ γ2 − 1 )m]} . (10) after log and cosh operations, we obtain the algebraic form: cn,m(ω) = 1 2 [( ω + √ ω2 − 1 )n−2m ( γ + √ γ2 − 1 )m + ( ω − √ ω2 − 1 )n−2m ( γ − √ γ2 − 1 )m] . (11) substituting (7) into √ γ2 − 1 yields the following expression: √ γ2 − 1 = 2χω √ χ2 − 1 √ ω2 − 1 χ2 − ω2 . (12) rewriting γ ± √ γ2 − 1 in the form a ± b √ ω2 − 1 allows (11) to be expressed as the quotient of two algebraic functions: cn,m(ω) = 1 2 ( ω + √ ω2 − 1 )n−2m( a+ b √ ω2 − 1 )m + ( ω − √ ω2 − 1 )n−2m( a− b √ ω2 − 1 )m (χ2 − ω2)m (13) where a = ω2 ( 2χ2 − 1 ) − χ2 is the numerator of (7), and b = 2χω √ χ2 − 1 is the numerator of (12) excluding the multiplicative factor of √ ω2 − 1. utilization of the binomial expansion formula gives ( a± b √ ω2 − 1 )m = a2m(ω)± b2m+1(ω)√ ω2 − 1 (14) 44 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 45 104 n. stojanović, i. krstić, n. stamenković where a2m(ω) = ⌊m/2⌋∑ k=0 ( m 2k ) am−2k b2k(ω2 − 1)k and b2m+1(ω) = ⌊(m−1)/2⌋∑ k=0 ( m 2k + 1 ) am−2k−1 b2k+1(ω2 − 1)k+1 are polynomials of degrees 2m and 2m+ 1, respectively. for m = 1 and m = 2, these polynomials are a2 (ω) = ω2 ( 2χ2 − 1 ) − χ2, b3 (ω) = 2χω3 √ χ2 − 1− 2χω √ χ2 − 1, (15) and a4 (ω) = a2 2 (ω) + 2χω √ χ2 − 1b3 (ω) , b5 (ω) = 2a2 (ω)b3 (ω) . (16) by substituting a2m(ω) and b2m+1(ω) into (13), it can be rearranged as follows: cn,m(ω) = 1 2 [ (ω + √ ω2 − 1)n−2m + (ω − √ ω2 − 1)n−2m ] a2m(ω) + [ (ω + √ ω2 − 1)n−2m − (ω − √ ω2 − 1)n−2m ] b2m+1(ω)√ ω2−1 (χ2 − ω2)m (17) in the numerator of (17), two hypergeometric functions can be rewritten regarding two chebyshev polynomials. the first function is (x+ √ x2 − 1)n+(x− √ x2 − 1)n = 2tn(x), where tn(x) is the chebyshev polynomial of the first kind, while the second function is (x+ √ x2 − 1)n − (x− √ x2 − 1)n = 2un(x) √ x2 − 1, where un(x) is the chebyshev polynomial of the second kind. using these relationships, (17) is finally expressed in the form of the rational optimum c filtering function: cn,m(ω) = a2m(ω)tn−2m(ω) +b2m+1(ω)un−2m−1(ω)( χ2 − ω2 )m = nn (ω) d2m (ω) (18) in which the two terms √ ω2 − 1 in the addend cancel each other out. this filtering function is optimum because εo is embedded in the calculation of χ. the polynomial nn (ω) is a purely odd or purely even function and satisfies the condition given in [14]. it can be noted that cn,m(1) = 1, i.e. ωr = 1. polynomial nn(ω) can be obtained using only two auxiliary polynomials, derived from the binomial expansion formula (14), along with two known chebyshev polynomials of the first and second kinds. the degrees of the purely even polynomial a2m(ω) and the purely odd polynomial b2m+1(ω) depend solely on the multiplicity of the zero pair of the transmission coefficient and not on the filter degree n. if the number of zero pairs increases, the filter degree n stays the same, eliminating the need for optimization 46 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 47 104 n. stojanović, i. krstić, n. stamenković where a2m(ω) = ⌊m/2⌋∑ k=0 ( m 2k ) am−2k b2k(ω2 − 1)k and b2m+1(ω) = ⌊(m−1)/2⌋∑ k=0 ( m 2k + 1 ) am−2k−1 b2k+1(ω2 − 1)k+1 are polynomials of degrees 2m and 2m+ 1, respectively. for m = 1 and m = 2, these polynomials are a2 (ω) = ω2 ( 2χ2 − 1 ) − χ2, b3 (ω) = 2χω3 √ χ2 − 1− 2χω √ χ2 − 1, (15) and a4 (ω) = a2 2 (ω) + 2χω √ χ2 − 1b3 (ω) , b5 (ω) = 2a2 (ω)b3 (ω) . (16) by substituting a2m(ω) and b2m+1(ω) into (13), it can be rearranged as follows: cn,m(ω) = 1 2 [ (ω + √ ω2 − 1)n−2m + (ω − √ ω2 − 1)n−2m ] a2m(ω) + [ (ω + √ ω2 − 1)n−2m − (ω − √ ω2 − 1)n−2m ] b2m+1(ω)√ ω2−1 (χ2 − ω2)m (17) in the numerator of (17), two hypergeometric functions can be rewritten regarding two chebyshev polynomials. the first function is (x+ √ x2 − 1)n+(x− √ x2 − 1)n = 2tn(x), where tn(x) is the chebyshev polynomial of the first kind, while the second function is (x+ √ x2 − 1)n − (x− √ x2 − 1)n = 2un(x) √ x2 − 1, where un(x) is the chebyshev polynomial of the second kind. using these relationships, (17) is finally expressed in the form of the rational optimum c filtering function: cn,m(ω) = a2m(ω)tn−2m(ω) +b2m+1(ω)un−2m−1(ω)( χ2 − ω2 )m = nn (ω) d2m (ω) (18) in which the two terms √ ω2 − 1 in the addend cancel each other out. this filtering function is optimum because εo is embedded in the calculation of χ. the polynomial nn (ω) is a purely odd or purely even function and satisfies the condition given in [14]. it can be noted that cn,m(1) = 1, i.e. ωr = 1. polynomial nn(ω) can be obtained using only two auxiliary polynomials, derived from the binomial expansion formula (14), along with two known chebyshev polynomials of the first and second kinds. the degrees of the purely even polynomial a2m(ω) and the purely odd polynomial b2m+1(ω) depend solely on the multiplicity of the zero pair of the transmission coefficient and not on the filter degree n. if the number of zero pairs increases, the filter degree n stays the same, eliminating the need for optimization optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 105 or recursion formulas. as a result, the mathematical framework is significantly simpler than the well-known solution presented in [14] for generalized chebyshev filters. to restore the half-power point ωc as the edge of the passband of the optimum c filter, it is necessary to determine the frequency at which (2) or (18), multiplied by εo, first reaches a value of 1. this requires solving the equation2 εocn,m(ω/ωr) = 1. the solution is given by ωc/ωr = λ > 1, where λ is a dimensionless parameter. the new value of the edge of the ripple band, ωr = ωc/λ, can be used to renormalize the filtering function (18) to the half-power bandwidth. for convenience and without loss of generality, the half-power point can be set to one (ωc = 1), resulting in a new ripple band edge of ωr = 1/λ < 1. this value is then used to renormalize the optimum rational c filtering function. c(ε) n,m(ω) = εo nn(ω) d2m(ω) ∣∣∣∣ ω →ωλ = nn(ω) d2m(ω) (19) ensuring that c(ε) n,m(1) = 1. the ripple factor εo is an embedded parameter in the rational optimum c approximation, arising from the renormalization process related to the half-power bandwidth. this is denoted by the superscript (ε) in (19). 2.3. examples and comparison the frequency responses of the filtering functions of the optimum 7th-degree c filter for m = 1, 2 and 3, expressed in the rational polynomial form (18) and scaled by εo, are shown in fig. 1. to illustrate that the ripples are equal, the scale within the ripple band −1 ≤ ω ≤ 1 is magnified 1000 times. the ripples reach values of ±εo at the edges of the ripple band ωr = 1. -4 -3 -2 -1 0 1 2 3 4 normalized frequency, ω -600 -400 -200 0 200 400 600 ǫ o c n ,m (ω ) e n la rg ed sc al e in p as sb an d 0.2 -0.2 m = 1 m = 2 m = 3 fig. 1. the 7th-degree optimum c filtering functions, ils = 50 db. the calculation of the rational optimum c filtering function (18), which features a pair of triple poles whose properties are summarized in table 1, is presented. the 2this calculation explicitly states that ωr ̸= 1 can be used for frequency renormalization. 46 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 47 106 n. stojanović, i. krstić, n. stamenković optimum ripple factor is εo = 0.0935, while the coefficient χ = 1.611042, is determined to achieve a minimum stopband insertion loss of ils = 50 db (or 316.1867 times). the two auxiliary polynomials are given by: a6(ω) = 281.86ω6 − 473.981ω4 + 213.666ω2 − 17.484, b7(ω) = 281.858ω7 − 614.885ω5 + 415.276ω3 − 82.248ω these polynomials, along with the first-degree chebyshev polynomial of the first kind and the zero-degree chebyshev polynomial of the second kind, are used to construct the rational polynomial form of the optimum c filtering function (18), multiplied by εo: c7,3(ω) = 0.0935 −52.712ω7 + 101.817ω5 − 58.8106ω3 + 9.32565ω (ω2 − 2.59551)3 (20) ensuring that c7,3(1) = 0.00935. to achieve a normalized half-power bandwidth of one, the parameter λ = 1.060296 is calculated for the final renormalization of equation (20) multiplied with the optimum ripple factor. this yields the final rational optimum c filtering function (19): c(ε) 7,3(ω) = nn(ω) d2m(ω) = −79.408ω7 + 136.43ω5 − 70.098ω3 + 9.8872ω (1.1242ω2 − 2.59546)3 ensuring that c(ε) 7,3(1) = 1. for comparison, the properties of other optimum c filtering functions of the 7th-degree are also listed in table 1. in all approximations, the optimum value of the ripple factor, εo = 0.0935, is used to calculate χ, ensuring an insertion loss of ils = 50 db at the frequency ωm. table 1. properties of the 7th-degree optimum c filtering functions properties characteristic function m = 0 m = 1 m = 2 m = 3 λ 1.097126 1.077877 1.062136 1.060296 χ ∞ 1.500606 1.455552 1.611042 ωm none 1.709891 2.042391 3.847784 ωr 0.911472 0.927748 0.941498 0.943132 area 0.028670 0.023813 0.019922 0.019531 table 1 provides a two-part comparison: the first part contrasts the all-pole optimum c characteristic function with its rational counterparts, while the second part compares the rational optimum c functions among themselves. the area below the characteristic function within half power passband3 (area) is essential for comparison. the first comparison reveals that the all-pole optimum c filtering function has the highest area, i.e. the reflected power, while its ripple band is the smallest. the second comparison shows that as m increases, area decreases, whereas the ripple band expands. consequently, the area between the ripple band edge frequency ωr and the half-power frequency ωc = 1 shrinks. 3the area is computed using the integral: area = ∫ 1 0 [c(ε) n,m(ω)]2dω. 48 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 49 106 n. stojanović, i. krstić, n. stamenković optimum ripple factor is εo = 0.0935, while the coefficient χ = 1.611042, is determined to achieve a minimum stopband insertion loss of ils = 50 db (or 316.1867 times). the two auxiliary polynomials are given by: a6(ω) = 281.86ω6 − 473.981ω4 + 213.666ω2 − 17.484, b7(ω) = 281.858ω7 − 614.885ω5 + 415.276ω3 − 82.248ω these polynomials, along with the first-degree chebyshev polynomial of the first kind and the zero-degree chebyshev polynomial of the second kind, are used to construct the rational polynomial form of the optimum c filtering function (18), multiplied by εo: c7,3(ω) = 0.0935 −52.712ω7 + 101.817ω5 − 58.8106ω3 + 9.32565ω (ω2 − 2.59551)3 (20) ensuring that c7,3(1) = 0.00935. to achieve a normalized half-power bandwidth of one, the parameter λ = 1.060296 is calculated for the final renormalization of equation (20) multiplied with the optimum ripple factor. this yields the final rational optimum c filtering function (19): c(ε) 7,3(ω) = nn(ω) d2m(ω) = −79.408ω7 + 136.43ω5 − 70.098ω3 + 9.8872ω (1.1242ω2 − 2.59546)3 ensuring that c(ε) 7,3(1) = 1. for comparison, the properties of other optimum c filtering functions of the 7th-degree are also listed in table 1. in all approximations, the optimum value of the ripple factor, εo = 0.0935, is used to calculate χ, ensuring an insertion loss of ils = 50 db at the frequency ωm. table 1. properties of the 7th-degree optimum c filtering functions properties characteristic function m = 0 m = 1 m = 2 m = 3 λ 1.097126 1.077877 1.062136 1.060296 χ ∞ 1.500606 1.455552 1.611042 ωm none 1.709891 2.042391 3.847784 ωr 0.911472 0.927748 0.941498 0.943132 area 0.028670 0.023813 0.019922 0.019531 table 1 provides a two-part comparison: the first part contrasts the all-pole optimum c characteristic function with its rational counterparts, while the second part compares the rational optimum c functions among themselves. the area below the characteristic function within half power passband3 (area) is essential for comparison. the first comparison reveals that the all-pole optimum c filtering function has the highest area, i.e. the reflected power, while its ripple band is the smallest. the second comparison shows that as m increases, area decreases, whereas the ripple band expands. consequently, the area between the ripple band edge frequency ωr and the half-power frequency ωc = 1 shrinks. 3the area is computed using the integral: area = ∫ 1 0 [c(ε) n,m(ω)]2dω. optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 107 3. transmission coefficient the rational squared magnitude function of the transmission coefficient of the optimal c filter is obtained by substituting the all-pole characteristic function with the rational characteristic function—given by equation (19) squared—into equation (1). the transmission coefficient s21(s) can then be determined from (1) using the standard procedure of analytic continuation over the entire s-plane, which corresponds to replacing ω with −js in the given |s21(jω)|2. the pole locations of the transmission coefficient can be found by solving for the roots of the polynomial in its denominator4, given by: d2 2m(−js) +n 2 n(−js) = 0. (21) from these roots, the poles pi = σi ± jωi, i = 1, 2, . . . , n, that lie in the left half-plane of s-plane are selected. the pole-zero positions of the 7th-degree transfer functions that correspond to the optimum all-pole chebyshev and the rational optimum c characteristic functions for m = 1, 2, and 3 are shown in fig. 2. -1.5 -1 -0.5 0 real part -1.5 -1 -0.5 0 0.5 1 1.5 im a g in a ry p a rt m = 3 m = 2 m = 1 m = 0 fig. 2. pole-zero positions of 7th-degree optimum c filters. the zero locations for m = 1, 2 and 3 are represented by ⋄, □ and ◦, respectively. the differences in pole positions of all transfer functions are minor. however, the calculation of the critical quality factor, defined as qc = −0.5|p1|/σ1, where p1 = σ1 ± jω1 is the pole pair that is closest to the imaginary axis, is of practical interest. this factor is commonly used to compare the sensitivity of networks and its values are listed in table 2. the value of qc increases with increasing m. however, the difference in qc between m = 2 and m = 3 is minimal, indicating that their passband sensitivities are almost the same. fig. 3 compares the steady-state responses, including the insertion loss in db, given by il = 20 log10 (|s21(jω)|), and the group delay responses of the filters, whose 4since |s21(jω)|2 = 1 1+ n2 n(ω) d2 2m(ω) ∣∣∣∣∣ ω=−js = d2 2m(−js) d2 2m(−js)+n2 n(−js) , follows (21). 48 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 49 108 n. stojanović, i. krstić, n. stamenković pole-zero positions are shown in fig. 2. all filters share the same half-power bandwidth (normalized to 1) and exhibit nearly identical passband characteristics. table 2 provides the ripple band, ωr = 1/λ, and transmission zero, ω0 = χ/λ, for each filter. the main difference lies in their stopband behavior. 10−1 100 normalized frequency, ω 0 10 20 30 40 50 60 70 s to p b a n d in se rt io n lo ss , d b ωs 0 0.1 0.2 p a ss b a n d r ip p le , d b 0 10 20 30 40 g ro u p d el a y, s m = 3 m = 2 m = 1 m = 0 fig. 3. the steady-state responses of the 7th-degree optimum c lowpass filters for m = 0, 1, 2, and 3. the stopband edge frequencies, ωs, are defined as the frequencies where the outof-band attenuation first reaches the specified minimum value of ils = 50 db. these values are listed in table 2. in fig. 3, the stopband edge frequency is explicitly assigned only for m = 0, as it is easily identifiable for the other three filters. it may be seen that all rational optimum c filters have one attenuation lobe, each with a level of 50 db, at frequencies ω′ m, which are listed in table 2. the cutoff slope, commonly defined as the first derivative of the transmission coefficient (1) at the half-power point, of rational optimum c filter can be calculated using the first derivative of its characteristic function as cs = d dω |s21(jω)| ∣∣∣∣ ω=1 = − 1 2 √ 2 d dω c(ε) n,m(ω) ∣∣∣∣ ω=1 (22) since c(ε) n,m(1) = 1. the cutoff slopes of all considered 7th-degree filters are provided in table 2. increasing the multiplicity of the transmission zero results in a lower stopband edge frequency and steeper cutoff slope. however, increasing the transmission zero multiplicity beyond two is unnecessary, as the improvement becomes negligible. notably, the magnitude response of the filter with a triple zero pair exhibits a broad stopband region with extremely high attenuation. all group delay responses increase monotonically in the passband. the differences become evident only in the peak value near the passband edge, which increases as m 50 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 51 108 n. stojanović, i. krstić, n. stamenković pole-zero positions are shown in fig. 2. all filters share the same half-power bandwidth (normalized to 1) and exhibit nearly identical passband characteristics. table 2 provides the ripple band, ωr = 1/λ, and transmission zero, ω0 = χ/λ, for each filter. the main difference lies in their stopband behavior. 10−1 100 normalized frequency, ω 0 10 20 30 40 50 60 70 s to p b a n d in se rt io n lo ss , d b ωs 0 0.1 0.2 p a ss b a n d r ip p le , d b 0 10 20 30 40 g ro u p d el a y, s m = 3 m = 2 m = 1 m = 0 fig. 3. the steady-state responses of the 7th-degree optimum c lowpass filters for m = 0, 1, 2, and 3. the stopband edge frequencies, ωs, are defined as the frequencies where the outof-band attenuation first reaches the specified minimum value of ils = 50 db. these values are listed in table 2. in fig. 3, the stopband edge frequency is explicitly assigned only for m = 0, as it is easily identifiable for the other three filters. it may be seen that all rational optimum c filters have one attenuation lobe, each with a level of 50 db, at frequencies ω′ m, which are listed in table 2. the cutoff slope, commonly defined as the first derivative of the transmission coefficient (1) at the half-power point, of rational optimum c filter can be calculated using the first derivative of its characteristic function as cs = d dω |s21(jω)| ∣∣∣∣ ω=1 = − 1 2 √ 2 d dω c(ε) n,m(ω) ∣∣∣∣ ω=1 (22) since c(ε) n,m(1) = 1. the cutoff slopes of all considered 7th-degree filters are provided in table 2. increasing the multiplicity of the transmission zero results in a lower stopband edge frequency and steeper cutoff slope. however, increasing the transmission zero multiplicity beyond two is unnecessary, as the improvement becomes negligible. notably, the magnitude response of the filter with a triple zero pair exhibits a broad stopband region with extremely high attenuation. all group delay responses increase monotonically in the passband. the differences become evident only in the peak value near the passband edge, which increases as m optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 109 increases. for m = 2 and m = 3, the group delays are nearly identical. the peak group delay values, τm, are calculated and listed in table 2. another important parameter to consider is the reflection coefficient |s11(jω)|2 = [ c(ε) n,m(ω) ]2 1 + [ c(ε) n,m(ω) ]2 (23) the return loss frequency responses in decibels, rl = 20 log10 (|s11(jω)|), of the 7thdegree optimum c filters with for m = 0, 1, 2 and 3 are shown in fig. 4. the return loss levels of all filters are determined with εo and exhibit the equiripple behavior. the differences in the spacing of reflection zeros among 7th-degree optimum c filters are sufficient for functional tuning. however, the optimum all-pole c filter has the widest separation, while for the rational optimum c filters, this separation slightly decreases as m increases. additionally, as the filter degree increases, the zero separation decreases. 10−1 100 normalized frequency, ω -40 -35 -30 -25 -20 -15 -10 -5 0 r et u rn lo ss , d b m = 3 m = 2 m = 1 m = 0 fig. 4. the return loss responses of the 7th-degree optimum c lowpass filters for m = 0, 1, 2, and 3. table 2. properties of 7th-degree optimum c filters properties filters m = 0 m = 1 m = 2 m = 3 ω0 = χ/λ ∞ 1.392187 1.370401 1.519427 ω′ m = ωm/λ none 1.586262 1.922885 3.628922 ωr = 1/λ 0.911472 0.927748 0.941498 0.943132 qc 5.3421 6.6824 8.3906 8.6179 ωs 1.7358 1.3457 1.2674 1.2892 cs 16.94209 21.55732 27.22896 27.85117 τm 14.9337 18.1713 22.4434 23.1394 50 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 51 110 n. stojanović, i. krstić, n. stamenković the magnitude correction of the transmission coefficient can be applied to both oddand even-degree filters. introducing a single transmission zero significantly enhances the out-of-band rejection of the all-pole filter by steepening the cutoff slope and lowering the stopband edge frequency. while increasing the multiplicity of the transmission zero provides a slight improvement in the cutoff slope, extending it beyond two is unnecessary, as it leads to higher sensitivity and increased network complexity. however, a triple-zero pair results in a magnitude response with a wide stopband region and extremely high attenuation in the frequency band around the transmission zero. 4. conclusion this paper presents an efficient and straightforward procedure for correcting the magnitude function in optimal c filters, specifically designed for low-pass filters that prioritize magnitude specifications. the chebyshev filtering function is modified by introducing a symmetric pair of poles of arbitrary multiplicity into its transcendental form, preserving the extremal properties of the passband’s equal-ripple behavior. a new and efficient method is proposed for deriving a rational polynomial from the transcendental form of the optimum c filtering function that exhibits a transmission zero pair, single or multiple, at a finite frequency. as an example, the derivation of a 7th-degree rational polynomial from the transcendental optimum chebyshev filtering function is demonstrated for cases of single, double, and triple pole pairs. the proposed approach enhances the cutoff slope and slightly reduces reflection power at the filter’s input terminals compared to the optimum c all-pole filter. however, a single or double transmission pole pair is generally preferred for filter design, as increasing the multiplicity provides minimal improvements in the cutoff slope and return loss while increasing hardware complexity, sensitivity, and tuning time. acknowledgment: the authors would like to express their gratitude to professor v. s. stojanović from the university of nǐs, serbia for his invaluable comments and suggestions. references [1] s. nikolić, n. stojanović, n. stamenković, and i. krstić, “optimum allpole filters with chebyshev passband magnitude response,” aeu international journal of electronics and communications, vol. 135, no. 6, p. 153740, 2021, doi:10.1016/j.aeue.2021.153740. [2] n. stojanović, n. stamenković, and i. krstić, “an improved design method for even-degree optimum allpole filters with equiripple passband responses,” aeu international journal of electronics and communications, vol. 159, no. 2, p. 154469, 2023, doi:10.1016/j.aeue.2022.154469. [3] n. stojanović, i. krstić, and n. stamenković, “recursive digital filters with optimum equiripple passband magnitude characteristic,” aeu international journal of electronics and communications, vol. 170, no. 10, p. 154851, 2023, doi:10.1016/j.aeue.2023.154851. [4] n. stojanović, i. krstić, and n. stamenković, “performance analysis of optimum chebyshev filters at microwave frequencies,” aeu international journal of electronics and communications, vol. 187, no. 12, p. 155502, 2024, doi:10.1016/j.aeue.2024.155502. [5] m. agarwal and a. sedra, “on designing sharp cutoff low-pass filters,” ieee transactions on audio and electroacoustics, vol. 20, no. 2, pp. 138–141, jun. 1972, doi:10.1109/tau.1972.1162359. 52 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 53 110 n. stojanović, i. krstić, n. stamenković the magnitude correction of the transmission coefficient can be applied to both oddand even-degree filters. introducing a single transmission zero significantly enhances the out-of-band rejection of the all-pole filter by steepening the cutoff slope and lowering the stopband edge frequency. while increasing the multiplicity of the transmission zero provides a slight improvement in the cutoff slope, extending it beyond two is unnecessary, as it leads to higher sensitivity and increased network complexity. however, a triple-zero pair results in a magnitude response with a wide stopband region and extremely high attenuation in the frequency band around the transmission zero. 4. conclusion this paper presents an efficient and straightforward procedure for correcting the magnitude function in optimal c filters, specifically designed for low-pass filters that prioritize magnitude specifications. the chebyshev filtering function is modified by introducing a symmetric pair of poles of arbitrary multiplicity into its transcendental form, preserving the extremal properties of the passband’s equal-ripple behavior. a new and efficient method is proposed for deriving a rational polynomial from the transcendental form of the optimum c filtering function that exhibits a transmission zero pair, single or multiple, at a finite frequency. as an example, the derivation of a 7th-degree rational polynomial from the transcendental optimum chebyshev filtering function is demonstrated for cases of single, double, and triple pole pairs. the proposed approach enhances the cutoff slope and slightly reduces reflection power at the filter’s input terminals compared to the optimum c all-pole filter. however, a single or double transmission pole pair is generally preferred for filter design, as increasing the multiplicity provides minimal improvements in the cutoff slope and return loss while increasing hardware complexity, sensitivity, and tuning time. acknowledgment: the authors would like to express their gratitude to professor v. s. stojanović from the university of nǐs, serbia for his invaluable comments and suggestions. references [1] s. nikolić, n. stojanović, n. stamenković, and i. krstić, “optimum allpole filters with chebyshev passband magnitude response,” aeu international journal of electronics and communications, vol. 135, no. 6, p. 153740, 2021, doi:10.1016/j.aeue.2021.153740. [2] n. stojanović, n. stamenković, and i. krstić, “an improved design method for even-degree optimum allpole filters with equiripple passband responses,” aeu international journal of electronics and communications, vol. 159, no. 2, p. 154469, 2023, doi:10.1016/j.aeue.2022.154469. [3] n. stojanović, i. krstić, and n. stamenković, “recursive digital filters with optimum equiripple passband magnitude characteristic,” aeu international journal of electronics and communications, vol. 170, no. 10, p. 154851, 2023, doi:10.1016/j.aeue.2023.154851. [4] n. stojanović, i. krstić, and n. stamenković, “performance analysis of optimum chebyshev filters at microwave frequencies,” aeu international journal of electronics and communications, vol. 187, no. 12, p. 155502, 2024, doi:10.1016/j.aeue.2024.155502. [5] m. agarwal and a. sedra, “on designing sharp cutoff low-pass filters,” ieee transactions on audio and electroacoustics, vol. 20, no. 2, pp. 138–141, jun. 1972, doi:10.1109/tau.1972.1162359. optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 111 [6] s. d. roy and p. clark, “design of sharp-cut-off low-pass filters with ripples in the pass-band,” radio and electronic engineer, vol. 45, pp. 293–298(5), jun. 1975, doi:10.1049/ree.1975.0054. [7] m. v. andrejević stošović, j. m. živanić, and v. b. litovski, “maximally flat filter functions with the maximum number of transmission zeros having maximal multiplicity,” ieee transactions on circuits and systems ii: express briefs, vol. 61, no. 10, pp. 778–782, 2014, doi:10.1109/tcsii.2014.2345300. [8] n. stojanović, n. stamenković, and i. krstić, “design of modified jacobi microstrip lowpass filter for l-band application,” ieee trans. on circuits and systems ii: express briefs, vol. 69, no. 12, pp. 5154–5158, 2022, doi:10.1109/tcsii.2022.3199076. [9] r. cameron, “general coupling matrix synthesis methods for chebyshev filtering functions,” ieee transactions on microwave theory and techniques, vol. 47, no. 4, pp. 433–442, apr. 1999, doi:10.1109/22.754877. [10] z. d. milosavljević and m. v. gmitrović, “realizable bandpass filter structures with optimal redundancy parameters,” facta univ. ser. elect. energet., vol. 13, no. 1, p. 131–141, apr. 2000. [11] j. lee and k. sarabandi, “a synthesis method for dual-passband microwave filters,” ieee transactions on microwave theory and techniques, vol. 55, no. 6, pp. 1163–1170, jun. 2007, doi:10.1109/tmtt.2007.897712. [12] q.-x. chu and z.-h. tu, “a novel method to determine general chebyshev filters transmission zeroes,” microwave and optical technology letters, vol. 49, no. 11, pp. 2849–2853, nov. 2007, doi:10.1002/mop.22832. [13] j.-t. kuo, c.-c. wang, c.-h. lin, and p. a. williams, “generalized chebyshev function of arbitrary order with real-frequency zero pairs in an explicit rational polynomial expression,” in 2023 asia-pacific microwave conference (apmc), dec. 5 8, 2023, pp. 147–149, doi:10.1109/apmc57107.2023.10439929. [14] r. j. cameron, c. m. kudsia, and r. r. mansour, microwave filters for communication systems: fundamentals, design, and applications. john wiley & sons, 2018. [15] z. milosavljević, “design of generalized chebyshev filters with asymmetrically located transmission zeros,” ieee transactions on microwave theory and techniques, vol. 53, no. 7, pp. 2411–2415, jul. 2005, doi:10.1109/tmtt.2005.850430. 52 n. stojanović, i. krstić, n. stamenković optimum chebyshev lowpass filter with a pair of imaginary-axis zeros 53 facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 663 664 facta universitatis, series: electronics and energetics call for papers special issue internet of things guest editors marijana despotović-zrakić, faculty of organizational sciences, university of belgrade maja@elab.rs zorica bogdanović, faculty of organizational sciences, university of belgrade zorica@elab.rs huansheng ning, school of computer and communication engineering, university of science and technology beijing ninghuansheng@ustb.edu.cn božidar radenković, faculty of organizational sciences, university of belgrade boza@elab.rsria scope nowadays, internet has evolved into a platform that reshapes modern life and removes borders between real, social and cyber worlds. internet of things (iot) is an emerging paradigm and a cutting edge technology that harnesses a network of embedded, interconnected objects (sensors, actuators, tags or mobile devices) in order to collect various types of information at anytime and anywhere. these devices can be used for building different complex smart environments, such as smart homes, smart classrooms, smart offices, smart factories, smart cities, smart power grids or smart e-government. further, the networks of devices are based on advanced internet standards. iot implies seamless integration of numerous types of devices into existing internet infrastructure. smart environments can be customized according to users’ needs and preferences which are suitable for automating these environments. the main subject of the special issue is internet of things and its application in: business, industry, research and academic community works. this special issue aims to provide state-of-art and innovative papers on the design, implementation, and usage of intelligent iot and related technologies, such as: cloud computing, big data, pervasive computing, social computing, etc. the primary goal is to provide a variety of research and survey articles in the field of the internet of things and their application in different aspects of human activities. findings and discussion should foster potentials and capabilities of research, academic community, and industry as well. 664 call for papers the target audience of this special issue includes professionals and researchers working in the field of information and communication technologies and their applications in business, industry, science and education. this special issue looks for quality papers that present research results on the iot related to pervasive scenarios. recommended topics include, but are not limited to the following: 1. smart environments:  architectural design of smart environment  technologies for implementing smart environment  design and technologies for implementing smart environment (smart home, classroom, office, building, parking, smart grid etc.) 2. internet of things technologies and protocols:  iot and ipv6  iot and coap  mqtt  m2m communication  wireless standards and protocols for iot 3. infrastructure for the internet of things:  wireless sensor networks  smart grids  iot and cloud computing  iaas, paas and saas for internet of things  security and privacy of cloud and iot applications  iot, big data and data analytics  future infrastructure for the internet of things 4. applied internet of things:  iot infrastructure for business performance  iot infrastructure for industry  iot in energetics  iot in science and education  iot in e-health  iot in agriculture  iot in ecology and environment 5. trends in internet of things  the internet of everything  ambient intelligence  event-driven architecture  security challenges in iot  internet of nano things submission guidelines authors are invited to submit original research contributions by following the detailed instructions given in the “information for authors” at http://casopisi.junis.ni.ac.rs/index.php/ fuelectenerg/about. authors should explicitly state that the paper is submitted to the “special issue on internet of things”. questions about the special issue should be directed to the guest editors. important dates june 30, 2015: manuscript submission august 15, 2015: notification of the first review september 15, 2015: revised manuscript submission october 15, 2015: notification of the second review november 15, 2015: final manuscript submission spring 2016: expected publication. facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 345-358 https://doi.org/10.2298/fuee1903345s © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd scada systems in the cloud and fog environments: migration scenarios and security issues * mirjana d. stojanović 1 , slavica v. boštjančič rakas 2 , jasna d. marković-petrović 3 1 university of belgrade, faculty of transport and traffic engineering, belgrade, serbia 2 university of belgrade, mihailo pupin institute, belgrade, serbia 3 ce djerdap hydroelectric power plants ltd., hpp djerdap 2, negotin, serbia abstract. this paper addresses scenarios and security issues when migrating scada systems to cloud and fog environments. migration strategies to the cloud refer to different cloud infrastructures (public, private or hybrid) as well as selection of cloud service. benefits of cloud-based scada systems mainly refer to improving economic efficiency. we further address migration risks, with regards to quality of service and cyber security. challenges in security provisioning encompass security solutions, risk management and test environment. finally, we address emerging evolution of scada toward fog computing, including the three-tier system’s architecture and security issues. key words: cloud computing, cyber security, fog computing, quality of service, scada 1. introduction with respect to the earlier version [1], presented at the 4th virtual international conference on science, technology and management in energy – energetics 2018, this paper is extended with more thorough considerations related to cyber security when migrating supervisory control and data acquisition (scada) systems into cloud computing environment, and discussion on the evolution toward fog computing system architecture. in the past few years, the focus of cloud computing has progressively shifted from consumer applications toward corporate control systems. the migration of applications, such as scada, into the cloud environment is interesting for business users due to potential reduction of costs, scalability, efficient system configuration and maintenance. access and lease of resources are on-demand, with costs that are much lower than buying, received february 12, 2019; received in revised form april 18, 2019 corresponding author: mirjana d. stojanović university of belgrade, faculty of transport and traffic engineering, vojvode stepe 305, 11000 belgrade, serbia (e-mail: m.stojanovic@sf.bg.ac.rs) * an earlier version of this paper was presented at the 4th virtual international conference on science, technology and management in energy, energetics 2018, october 25-26, niš, serbia [1]  346 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović installing and maintaining the hardware and software, and with decreasing the number of technical staff. the industrial sector is experiencing substantial benefits from using the industrial internet of things (iiot) to automate systems, deploy different types of sensors, improve efficiency, and increase revenue opportunities. the amount of data from such industrial systems can be measured in the millions of gigabytes. traditional information technology (it) cannot fulfill requirements regarding data analysis, delay, mobility, reliability, security, privacy, and network bandwidth. fog computing seems to be a promising solution to resolve such problems. particularly, fog computing outperforms cloud computing for delay-sensitive applications with stringent security requirements. apart from industry efforts [2–5], only a few academic research papers systematically explored scada systems using cloud and/or fog environments, and particularly the related security issues. our primary motivation for this work was to provide an in-depth insight into migration of advanced scada systems to both cloud and fog environments, with focus to security as a crucial risk factor in the context of critical infrastructure. the main objectives of this review paper are: (1) to discuss security issues of cloud-based scada systems, regarding different migration strategies and types of cloud services; (2) to consider scada security solutions and challenges in security provisioning in the cloud environment and (3) to explore scada evolution toward fog computing system architecture, with special concern to security. finally, we identify gaps in current research and propose relevant research priorities for future work in the area. the rest of the paper is organized as follows. section 2 provides a brief theoretical background, regarding operation principles of scada systems, as well as basic concepts of cloud and fog computing. in section 3, we first explain migration strategies of scada systems to the cloud, with respect to different cloud infrastructures and selection of cloud service. further, benefits and risks of cloud-based scada systems are explained, as well as challenges in cloud security provisioning in terms of security solutions, risk management and test environments. section 4 considers evolution toward fog computing system architecture, including migration of scada systems to fog, and security issues. section 5 concludes the paper. 2. theoretical background 2.1. scada system: architecture, configuration and protocols scada systems are a class of industrial control systems that control and monitor geographically dispersed process equipment in a centralized manner. they are widely used in the industrial sectors like electric power systems, oil refineries and natural gas distribution, water and wastewater treatment, and transportation systems. fig. 1 presents layered architecture of a scada system, with common components and configuration. hierarchy of scada system is defined according to interconnection of its components and their connectivity with external networks [6–8]. the lowest layer 0 represents physical devices that are in direct interaction with industrial hardware, interconnected via fieldbus. scada systems in the cloud and fog environments: migration scenarios and security issues 347 scada mtu ...rtu plc ied scada partner plants work stations hmi historian internet fieldbus network field devices layer 0 fieldbus network (field site) layer 1 controller network (field site) layer 2 supervisory network (control center) layer 3 operational traffic over dmz layer 4 corporate network (web and e-mail servers, business servers) application servers domain controller supervisory network controller network corporate network fig. 1 the layered architecture of a scada system controllers at layer 1 process signals from field devices and generate appropriate commands for these devices. they encompass remote terminal units (rtus), programmable logic controllers (plcs) and intelligent electronic devices (ieds) that perform local control of actuators and sensor monitoring. processing results are forwarded to control center at layer 2 for further analysis and response control. supervisory network connects scada server (master terminal unit, mtu), historian server, engineering work stations, human machine interface (hmi) server and consoles, as well as communication devices, such as routers, switches or modems. control center collects and analyzes information obtained from field sites, presents them on the hmi consoles, and generates actions based on detected events. control center is also responsible for general alarms, analysis of trends and generating the reports. communication subsystem connects control center with field sites and allows operators remote access to field sites for diagnostic and failures repairing purposes. it also connects control center with scada partner plants. layer 3 typically represents demilitarized zone (dmz), where application servers, historian server and domain controller are located. layer 4 corresponds to the corporate it network, which is connected to the internet. modern scada systems are based on open communication standards, such as ethernet, transmission control protocol/internet protocol (tcp/ip) suite and a variety of wireless standards. a set of standard or proprietary protocols are used for communications, over pointto-point links or a broadband ip-based wide area network (wan). there are several standard 348 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović and vendor-specific scada communication protocols, and the most widespread are modbus, distributed network protocol (dnp3), iec 60870-5 series and iec 61850 series used for electrical substation automation systems. most of these protocols are designed or extended to operate over tcp/ip networks. besides, most of the existing fieldbus protocols are based on ethernet technology. a comprehensive review of scada protocols can be found in [9] and [10]. 2.2. cloud computing: basics and security issues according to [11], cloud computing is defined as "a model for enabling ubiquitous, convenient, on-demand network access to a shared pool of configurable computing resources (e.g., networks, servers, storage, applications, and services) that can be rapidly provisioned and released with minimal management effort or service provider interaction". public cloud infrastructure is owned by a provider and sold as a service to business and residential users. private cloud refers to an infrastructure that is owned or leased by a business user (single organization). hybrid cloud infrastructure is a combination of private and public cloud infrastructures, which remain mutually independent and connected by standard or proprietary technology that enables portability of data and applications. service architecture of a cloud computing system is hierarchically structured [12]:  the lowest, hardware layer at the data center actually consists of the physical hardware devices including the processor, memory, storage and bandwidth.  the infrastructure layer assumes the virtualization to provide the infrastructure as a service (iaas), which usually consists of a pool of virtual machines (vms) that can be provisioned on demand to the it consumers.  the platform layer enables creation and development of software, which can be later delivered over the web. hence, this layer provides the platform as a service (paas) by utilizing the components and services of the infrastructure layer.  the highest, software layer provides the ready-to-use software and applications for the business needs of the cloud service customers. hence, this layer facilitates and provides the software as a service (saas) by utilizing the components and services of the platform layer. besides security threats that are present in the existing computing platforms and networks, cloud computing faces a number of additional vulnerabilities [13]. they include: (1) attacks by other customers; (2) shared technology issues; (3) failures in provider or customer security systems; (4) flawed integration of provider and customer security systems; (5) insecure application programming interfaces; (6) data loss or leakage and (7) account or service hijacking. in particular, susceptibilities depend on the type of cloud service. in general, iaas is susceptible to all of the threats that are well known from the traditional information and communication environment [14]. all of the client applications running on the virtual machines are like "black boxes" for the provider. in other words, the customer is responsible for securing these applications. paas is particularly susceptible to shared technology issues, because security settings may differ for various kinds of resources. another problem caused by shared resources refers to data leakage. finally, protection of user objects is one of the most serious issues of paas [15]. since saas requires only a web browser and the internet connection, its security aspects are similar to the web service [16]. saas is susceptible to data security, and particularly to their confidentiality. scada systems in the cloud and fog environments: migration scenarios and security issues 349 the other common problems with data security include data backup, data access, storage locations, availability, authentication, etc. table 1 summarizes the attacks types and their impacts, regarding layered cloud service architecture and emphasizes responsibilities of cloud service provider (csp). table 1 types of attacks on the cloud and their impacts (adapted from [16]) security issues attack types impacts csp responsibility saas paas iaas software layer sql injection attacks, cross site scripting modification of data, confidentiality, session hijacking  platform layer domain name system attacks, sniffing, reuse of ip address traffic flow analysis, exposure in network security   infrastructure layer dos and ddos, vm escape, hypervisor rootkit software interruption and modification, programming flaws    hardware layer phishing attacks, malware injection attack limited access to data centers, hardware modification and theft    2.3. fog computing: basics and security issues fog computing is a decentralized network architecture in which data storage, processing and applications are distributed in the most efficient way between the data source and the cloud. fog computing and cloud computing show similar characteristics in terms of computation, storage and networking technologies. however, the most important difference of fog computing is its close distance to end users. this property is essential to support delay-sensitive applications and services. another difference refers to support of big data by means of edge analytics and stream mining. finally, location-awareness property enables mobility support. comprehensive surveys on fog computing, including applications in the electric power industry, can be found in [17] and [18]. another benefit of fog computing is its high security because data is processed by a large number of nodes in a distributed system. however, including the virtualization just like cloud, fog environment can still be affected by the similar threats. as opposed to cloud computing, standard security certifications and measures still do not exist for the fog computing. stojmenovic and wen first explored security and privacy issues in the fog computing environment [19]. a more detailed review of fog security solutions can be found in [20]. 3. cloud-based scada systems: migration, benefits and risks 3.1. migration of scada systems to cloud cloud computing provides support for scada applications in two ways [3]: 1. scada application is executed on premises (company, organization, etc.). it is directly connected with control center and transfers data to the cloud where they can be stored and distributed. 2. scada application is completely executed in the cloud, and is remotely connected to the control center. 350 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović the first method, presented in fig. 2, is more widely used. control functions of scada application are isolated in the controller network, while scada application is connected to cloud services that allow visualization of processes, reports and remote access. such applications are usually implemented on a public cloud infrastructure. implementation illustrated in fig. 3 is suitable for distributed scada applications. controllers are connected via wan links to scada application that is executed in the cloud. such applications are usually implemented on private and hybrid cloud infrastructures. public cloud controller network scada mtu on-site scada real-time process and historical data uploaded to the cloud hmi (work stations) firewall plc rtu rtuied rtu fig. 2 public cloud infrastructure, with scada system operating on-premises and sending data through cloud private/hybrid cloud infrastructure wan rtu radio, gsm rtu ied distributed control network ied plc plc real-time process and historical data uploaded to the cloud command and control messages downloaded to the controllers satelite hmi (work stations) fig. 3 private or hybrid cloud infrastructure where controllers are connected via wan links to scada application that is executed in the cloud regarding service selection, there are three possible migration scenarios of scada system to the cloud, namely the re-hosting, refactoring and revising [21]. the first scenario (re-hosting) is the fastest and the simplest, and represents installing the existing scada applications to cloud environment, based on iaas. this is the first step of the gradual migration, that allows analysis and, if needed, extension of the applications, through several iterations. the second and the third scenarios assume re-engineering to better benefit from the features of cloud computing, primarily in terms of scalability and reliability. this can be a simple modification of particular features (refactoring). an example is implementation of resource control capabilities that allows adding additional resources when the application scada systems in the cloud and fog environments: migration scenarios and security issues 351 is intensively used and releasing resources when they are not needed. larger modifications at the application core are also possible (revising). an example is the use of paas database for modification of application in such a way that multi-tenancy saas offering is possible. the increase of the number of saas offers requires the replacement of the existing scada applications with cloud-based saas solutions. 3.2. benefits and risks there are several advantages of cloud computing that motivate users to migrate to cloudbased scada system. with public cloud, access and lease of resources are on-demand, at a much lower price than purchasing, installing and maintaining company's own software and hardware. consequently, the number of technical staff, needed for it resource maintaining, decreases. according to [3], cloud-based scada solution can reduce end-user costs up to 90% over a traditional scada system. scalability is enhanced, since there is no need for purchasing and installing server farm, databases, web servers, when more resources are needed. users can easily purchase additional resources on a virtual cloud server, with no need of installing and maintaining the additional hardware [3]. information located on a cloud server can be accessed from anywhere; hence, the collaboration on projects is more efficient due to easier access to information. upgrade of existing and implementation of new applications is simplified through rehosting, refactoring and revising [21]. with private cloud, efficient resource usage, reduced energy consumption and efficient maintenance enable faster upgrade, business continuity, rapid deployment of new services and overall cost reduction [22]. despite the aforementioned benefits, there are two serious risk factors for cloud-based scada systems, quality of service (qos) and cyber security, which will be considered in the following subsections. 3.2.1. qos requirements qos refers to system’s performance, as well as reliability and availability. most of the industrial applications pose stringent performance requirements regarding delay, packet loss and bandwidth. the most stringent requirements for delay are in the fieldbus and controller networks. response times are in the range of 250 microseconds to 1 millisecond, while for less demanding processes they are in the range of 1 to 10 milliseconds [9]. upper layers have progressively less stringent delays, typically up to 1 second. industrial applications also assume highly reliable network infrastructure with service availability higher than 99.98% [23]. the use of public cloud services increases the risk that these requirements will not be met, because the user cannot control the network performance. increased and unpredictable delay is challenging, since it can block the real-time scada operation. church et al. presented a case study on migration of a scada system to the iaas cloud [21]. they analyzed several open source scada applications and applied re-hosting approach to migrate scada application to a real academic network. performance evaluation has shown that delay introduced by the cloud-based scada system was not a limiting factor. measured response times were in the range from several hundreds of milliseconds to one 352 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović second. however, problems emerged with polling protocols (e.g., modbus tcp), which are based on individual polls of remote stations. applying event-driven communication protocols seems to be more efficient solution, because of reducing both delay and amount of data sent across a network. if such a solution is not possible and polling protocols have to be applied, field devices should be spread across several remote servers. before migration of a scada system to the public cloud, the following questions should be answered [2, 3]:  what are the consequences of variable qos on the industrial process controlled by a particular scada system?  what is the impact of increased delay and delay variation on scada system?  what is the upper bound for delay in each system’s part? for example, increased delay is not critical at the upper layers, which perform monitoring and reporting. the problems of availability and reliability exist in every system in the public cloud. the servers are placed in unknown locations that users cannot access. the data of scada systems encompass results of the industrial process control in real time; therefore, the loss of functionality, even for a few seconds, can cause serious consequences to the industrial process. the situation is different with private cloud infrastructure. chen et al. conducted a study on private cloud-based electric power scada system [22]. their experimental results indicated technical feasibility of the professional private cloud solution; such a system meets the actual need of power grid operations, and some qos parameters such as network load rate are even better than those of the traditional it architecture. 3.2.2. security issues the security issue of the hard real-time system requires overall analysis and holistic understanding of network protection, management theory and physical systems. this problem is getting even more complex in the case of migration to the cloud. cyber attacks on scada systems can be categorized into: hardware attacks, software attacks and communication stack attacks [24]. scada control center performs its actions based on the data received from rtus. attacks that jeopardize process control focus on modifying control data or blocking the data transfer. primary threats to scada systems are command/response injection, various forms of denial of service (dos) attacks, including distributed dos (ddos), and man-in-the-middle (mitm) attack [25, 26]. cloud-based scada systems suffer from the same cyber security risks (indicated in section 2.2) as the other systems integrated into cloud [27]. still, there are a number of threats in the public cloud environment that might make scada systems more vulnerable. first, cloud-based scada systems are more exposed to cyber threats such as command/response injection, dos/ddos attacks, and mitm attack. this comes as a consequence of sharing an infrastructure with unknown outside parties [3]. second, network connections between scada systems and the cloud potentially increase the risk of jeopardizing the whole industrial control systems by outside attackers [27, 28]. third, some of scada-specific application layer protocols lack protection [4, 27]. for instance, the most widespread scada protocols, modbus and dnp3, do not support authentication and encryption. finally, the use of commercial off-the-shelf solutions (instead of proprietary ones) potentially increases the cyber security risk [27]. scada systems in the cloud and fog environments: migration scenarios and security issues 353 3.3. security solutions according to [28], security solutions concerning public cloud infrastructure should address the challenges related to:  information input;  information and command output;  shared storage and computational resources and  shared physical infrastructure. regarding information input/output, it is essentially important not to expose the critical, control infrastructure to the internet. for that reason, when using public cloud infrastructure, push technology should be utilized to move data to the cloud rather than pull technology. thus, there are no open network ports on the control infrastructure, while scada applications remain isolated in the controller network. concerning shared storage and computational resources, scada utility interacting with a csp should be aware how the computational resources are managed for different applications running in the cloud, including guarantees for resource allocation and network access, service levels, fault-tolerance strategy, etc. finally, security of shared physical infrastructure refers to secure cloud infrastructure locations, communication links connecting the cloud infrastructure to the rest of the communications infrastructure, ability to inspect and audit the locations from which scada application will be served, etc. consequently, when selecting the csp and assessing maturity of the offered cloud service, the following criteria should be taken into account [4]:  ensuring secure user access.  mutual isolation of information originating from different applications.  determining the level of users control regarding changes of the csp infrastructure.  data encryption.  automated distribution of software patches.  provisioning scheduled and unscheduled reports that satisfy business needs.  continuous monitoring, which includes assessment of security mechanisms efficiency in near real-time.  continuous analysis of events, incidents, suspicious activities and anomalies.  capabilities to create and analyze log files, to detect intrusions in real-time, to generate responses to detected attacks.  readiness to take immediate corrective actions of all vulnerabilities identified.  consistent and reliable customer service. the most efficient way to protect scada system connected to the public cloud is to establish precise service level agreement (sla) that fulfills the aforementioned criteria. similar research, regarding enterprise resource planning, pointed out the importance of introducing slas in the context of using saas and open-source software [29]. scada protection is much simpler in private cloud, since security solutions are responsibility of the network owner. it is recommended to apply a strategy known as "defense-in-depth", i.e., a multilayer security architecture that minimizes the impact of a failure in any one layer mechanism [30]. this strategy assumes corresponding security policies, employing dmz network architecture to prevent direct traffic between the corporate and scada networks, as well as security mechanisms such as smart access control, firewalls, intrusion detection and prevention systems, antivirus software, deploying security patches on a regular basis, etc. 354 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović in hybrid cloud, using secured virtual private network (vpn) connection to the control infrastructure is strongly recommended [28]. 3.4. risk management security risk management is a cyclic process that encompasses several phases: risk analysis through identification of vulnerabilities and threats, risk assessment, making decisions on acceptable risk level, selection and implementation of measures to mitigate the risk. risk assessment is the most important phase in the risk management process, but also most susceptible to errors. according to [30], risk assessment is "the process of identifying risks to operations, assets, or individuals by determining the probability of occurrence, the resulting impact, and additional security controls that would mitigate this impact". different qualitative and quantitative approaches, methods and tools for risk assessment in industrial control environment can be found in the literature. two comprehensive reviews of risk assessment methods for scada systems have been published only recently [31, 32]. however, none of the reviewed methods considers cloud-based scada. hence, significant research efforts are needed to address this important issue, because risk management takes the outputs of the risk assessment process to consider the options for risk mitigation and finding the trade-offs among overall costs, benefits, and risks of scada migration to the cloud. 3.5. test environments due to need to support the operational continuity, it is often unfeasible to perform security experiments on a real scada system. hence, proper test environments should be developed, consisting of testbeds, datasets and simulated attacks. while test environments for scada in traditional ip-based networks have gained certain level of maturity, research work is still needed regarding cloud-based scada systems. scada security testbed can be implemented as: (1) a single software simulation package; (2) laboratory testbed, which may have several interacting simulations and (3) emulation or implementation-based, which uses emulator or real hardware [8]. in the context of cloud-based scada, probably the most valuable option will be laboratory testbeds that allow other researchers to repeat the experiments and validate their own upgraded solutions. such testbeds should be built on the top of some of the general-purpose cloud simulators, which interact with domain specific models or real world field devices. some examples of such simulators are cloudsim, greencloud, cloudanalyst, icancloud and emusim [33]. due to confidentiality of real scada network data, researchers often use synthetic datasets or datasets obtained from scada testbeds. this is a general problem in verifying security solutions for scada systems. besides synthetic datasets, there is a strong need to use datasets from real scada networks or to reuse publicly available ones. finally, proper attack models and scenarios, in which the attackers try to exploit vulnerabilities in cloud-based scada systems, should be developed. building accurate and plausible threat models is a prerequisite to design secure architecture concepts. this is generally an open issue in scada security, while in the context of cloud-based scada, it has been explicitly recognized for the first time very recently [34]. scada systems in the cloud and fog environments: migration scenarios and security issues 355 4. evolution toward fog computing system architecture 4.1. migration of scada systems to fog fog computing essentially extends cloud computing and services to the edge of network. consequently, end users, fog and cloud together form three-tier system architecture. considering migration of scada system, a possible architecture is proposed in fig. 4 (based on [17]). the end users stratum corresponds to end user devices, e.g., field devices, smart energy meters, line sensors, etc. it can also include iiot devices. the fog stratum encompasses one or more fog domains, managed by the same or different providers. fog domain is constituted by the fog nodes, i.e., devices with computing, storage, and network connectivity. examples of fog nodes are industrial controllers, switches, routers, embedded servers, etc. fog nodes provide integration with cloud stratum, routing and switching, data storage and sharing, real-time analytics, outage management, controller functions (rtus, plcs, ieds), wireless access, etc. the end users stratum and fog stratum are typically connected via wired or wireless local area networks (lans). the cloud stratum is responsible for functions such as high level storage, utility billing system, demand prediction, high level processing and historical data analysis. the fog stratum and cloud stratum communicate via wan connections. table 2 is based on [5] and summarizes comparison of fog computing and cloud computing environments in the context of scada system requirements. cloud stratum storage utility billing system demand prediction high level processing historical data fog stratum cloud integration routing fog load storage and sharing real-time analytics outage management controller network wireless access end users stratum end user devices iiot devices switch/router ap servers real-time analytics switch/ router scada mtu data storage and sharing industrial controller outage management field devices smart energy meters, line sensors etc. data storage and sharing private/hybrid cloud hmi fog domain 1 fog domain n ... wan wan lan lan fog nodes fog nodes fig. 4 three-tier architecture of a fog-based scada system 356 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović table 2 fog computing vs. cloud computing in terms of scada requirements feature fog computing cloud computing architecture decentralized (distributed) centralized communication wired or wireless lan ip wan number of server nodes large few real-time operation supported supported delay low relatively high bandwidth cost low relatively high security high relatively high mobility and location awareness supported limited 4.2. security considerations with fog computing, security does not function in the cloud, but locally, thus using the same corporate it policy, controls, and procedures as in traditional scada system. inherently, there is opportunity to increase cyber security as compared to the cloud environment. most fog nodes include a hardware root of trust [35], which represents a basis for protection chain from the field devices, through the fog stratum up to the cloud stratum. traffic is supervised from the cloud to the distributed fog network, which can use different anomaly-based techniques to detect malicious activities in the local context. security solutions for fog-based scada systems are generally similar to the ones applied for cloud-based scada. the emphasis is on the following techniques [20]:  authentication. all messages and entities must be authenticated, which is particularly important to prevent mitm attacks. different techniques can be applied, including public cryptography coupled with decoy technology, biometric authentication, etc.  access control. all fog nodes should provide access control and ensure authorization, to protect operations such as reading or writing data, executing programs and controlling sensors/actuators.  intrusion detection. intrusion detection techniques are generally deployed within cloud environment to identify possible incidents, e.g., different types of cyber attacks, and violation of network security policies or standard security practices. in fog computing, intrusion detection systems can be implemented both on the client side and the fog network side thus allowing double protection, from insider attacks and attacks originating from the cloud. if a threat is detected, fog nodes block malicious traffic and protect the critical scada network. highly-sensitive data can be processed locally without leaving the field site.  privacy. fog nodes are located close to, or at the field sites and collect more sensitive data compared to the cloud computing. for that reason, security techniques must ensure privacy for all field sites. similar to the cloud environment, challenges in security provisioning of fog-based scada systems include further development of fog-specific security solutions, risk assessment methods, as well as dedicated test environments. scada systems in the cloud and fog environments: migration scenarios and security issues 357 5. concluding remarks this paper provided a review of migration scenarios of scada systems toward cloud and fog environments with special attention to cyber security as a main operational risk factor, which requires additional research work and stipulates gradual migration. we have identified a progress in some areas, but also some open issues remain. first, public and private cloud architectures can both be the right selection for scada, but one size does not fit all. a proper risk analysis should be conducted to make right choice, and there is a strong need to develop appropriate risk assessment methods for that purpose. taking into account the assessed risk, the cost increase is justified to provide secure cloud services. second, proper testbeds should be developed to validate security solutions. they include laboratory testbeds, but also research efforts to develop sophisticated hardware/software emulation platforms that are able to interact with the network. finally, although evolution of scada toward fog computing environment is an emerging trend, which eliminates some of the problems inherent to the cloud, it is not risk-free by default. besides an obvious need for security standards in the area, additional research work is needed to assess suitability of a complicated three-tier system for scada applications, regarding additional expenses and limited scalability. acknowledgement: the paper is a part of the research funded by the ministry of education, science and technological development of serbia, within the projects tr 32025 and tr 36002. references [1] m. stojanović, s. boštjanĉiĉ rakas and j. marković-petrović, "cloud-based scada systems: cyber security considerations and future challenges", in proceedings of the 4th virtual international conference on science, technology and management in energy – energetics 2018. niš, serbia: research and development center "alfatec", and complex system research center, 2018, pp. 253–260. [2] e. nugent, "how cloud and fog computing will advance scada systems", manufacturing automation, pp. 22–24, november/december 2017. [3] l. combs, "cloud computing for scada", indusoft, 2011. http://www.indusoft.com/documentation/ white-papers/artmid/1198/articleid/430/cloud-computing-for-scada (accessed february 05, 2019). [4] p. d. howard, "a security checklist for scada systems in the cloud", gcn, 2015. https://gcn.com/articles/2015/06/29/scada-cloud.aspx (accessed february 05, 2019). [5] c. byers, "fog computing for industrial automation", control eng., 2018. https://www.controleng.com/ articles/fog-computing-for-industrial-automation/ (accessed february 05, 2019). [6] i. ahmed, s. obermeier, m. naedele and g. g. richard iii, "scada systems: challenges for forensic investigators", computer, vol. 45, no. 12, pp. 44–51, december 2012. [7] j. marković-petrović and m. stojanović, "an improved risk assessment method for scada information security", elektron. elektrotech., vol. 20, no. 7, pp. 69–72, september 2014. [8] s. nazir, s. patel and d. patel, "assessing and augmenting scada cyber security: a survey of techniques", comput. secur., vol. 70, pp. 436–454, september 2017. [9] b. galloway and g. p. hancke, "introduction to industrial control networks", ieee commun. surv. tut., vol. 15, no. 2, pp. 860–880, second quarter 2013. [10] j. gao, j. liu, b. rajan, r. nori, et al., "scada communication and security issues", secur. commun. netw., vol. 7, no. 1, pp. 175–194, january 2014. [11] p. mell and t. grance, the nist definition of cloud computing. nist special publication 800-145, 2011. http://www.indusoft.com/documentation/%20white-papers/artmid/1198/articleid/430/cloud-computing-for-scada http://www.indusoft.com/documentation/%20white-papers/artmid/1198/articleid/430/cloud-computing-for-scada https://gcn.com/articles/2015/06/29/scada-cloud.aspx https://www.controleng.com/%20articles/fog-computing-for-industrial-automation/ https://www.controleng.com/%20articles/fog-computing-for-industrial-automation/ 358 m. stojanović, s. boštjanĉiĉ rakas, j. marković-petrović [12] a. bashar, "modeling and simulation frameworks for cloud computing environment: a critical evaluation", in proceedings of the international conference on cloud computing and services science – icccss 2014. world academy of science, engineering and technology, 2014, pp. 1–6. [13] b. hari krishna, s. kiran, g. murali and r. pradeep kumar reddy, "security issues in service model of cloud computing environment", procedia comput. sci., vol. 87, pp. 246–251, 2016. [14] p. chavan, p. patil, g. kulkarni, r. sutar et al, "iaas cloud security", in proceedings of the 2013 international conference on machine intelligence and research advancement. ieee, 2013, pp. 549–553. [15] m. t. sandikkaya and a. e. harmanci, "security problems of platform-as-a-service (paas) clouds and practical solutions to the problems", in proceedings of the ieee 31st symposium on reliable distributed systems. ieee, 2012, pp. 463–468. [16] s. soufiane and b. halima, "saas cloud security: attacks and proposed solutions", trans. on machine learning and artificial intelligence, vol. 5, no. 4, pp. 291–301, august 2017. [17] c. mouradian, d. naboulsi, s. yangui, r. h. glitho, et al, "a comprehensive survey on fog computing: state-of-the-art and research challenges", ieee commun. surv. tut., vol. 20, no. 1, pp. 416–464, first quarter 2018. [18] p. hu, s. dhelima, h. ning and t. qiu, "survey on fog computing: architecture, key technologies, applications and open issues", j. netw. comput. appl., vol. 98, pp. 27–42, november 2017. [19] i. stojmenovic and s. wen, "the fog computing paradigm: scenarios and security issues", in proceedings of the 2014 federated conference on computer science and information systems. ieee, 2014, pp. 1–8. [20] s. khan, s. parkinson and y. qin, "fog computing security: a review of current applications and security solutions", j. cloud comput., vol. 6, no. 10, pp. 1–22, august 2017. [21] p. church, h. mueller, c. ryan, s. v. gogouvitis, et al., "migration of a scada system to iaas clouds – a case study", j. cloud comput. adv. syst. appl., vol. 6, no. 11, pp. 1–12, june 2017. [22] y. chen, j. chen and j. gan, "experimental study on cloud computing based electric power scada system", zte communications, vol. 13, no. 3, pp. 33–41, september 2015. [23] integrated service networks for utilities. cigré technical brochure tb 249, wgd2.07, 2004. [24] b. zhu, a. joseph and a. sastry, "a taxonomy of cyber attacks on scada systems", in proceedings of the international conference on internet of things and the 4th international conference on cyber, physical, and social computing. ieee, 2011, pp. 380–388. [25] z. el mrabet, n. kaabouch, has. el ghazi and ham. el ghazi, "cyber-security in smart grid: survey and challenges", comput. electr. eng., vol. 67, pp. 469–482, april 2018. [26] w. gao, t. morris, b. reaves and d. richey, "on scada control system command and response injection and intrusion detection", in proceedings of the 2010 ecrime researchers summit. ieee, 2010, pp. 1–9. [27] a. sajid, h. abbas and k. saleem, "cloud-assisted iot-based scada systems security: a review of the state of the art and future challenges", ieee access, vol. 4, pp. 1375–1384, april 2016. [28] b. a. akyol, "cyber security challenges in using cloud computing in the electric utility industry", technical report pnnl 21724, pacific northwest national laboratory, 2012. https://www.pnnl.gov/ main/publications/external/technical_reports/pnnl-21724.pdf (accessed february 05, 2019). [29] m. stojanović, v. aćimović-raspopović and s. boštjanĉiĉ rakas, "security management issues for open source erp in the ngn environment", in enterprise resource planning: concepts, methodologies, tools, and applications, vol. ii, m. khosrow-pour, ed. new york: igi global, 2013, pp. 789–804. [30] k. stouffer, j. falco and k. scarfone, guide to industrial control systems (ics) security. nist special publication 800-82 rev. 2, 2015. [31] y. cherdantseva, p. burnap, a. blyth, p. eden, et. al, "a review of cyber security risk assessment methods for scada systems", comput. secur., vol. 56, pp. 1–27, february 2016. [32] n. hossain, a. hossain, t. das and t. islam, "measuring the cyber security risk assessment methods for scada system", glob. j. eng. sci. res. manag., vol. 4, no. 7, pp. 1–12, july 2017. [33] a. ahmed and a. s. sabyasachi, "cloud computing simulators: a detailed survey and future direction", in proceedings of the 2014 ieee international advance computing conference (iacc). ieee, 2014, pp. 866–872. [34] m. kamal, ics layered threat modeling, sans institute – information security reading room, march 2019. https://www.sans.org/reading-room/whitepapers/ics/ics-layered-threat-modeling-38770 (accessed april 02, 2019). [35] y. gui, a. s. siddiqui and f. saqib, "hardware based root of trust for electronic control units", in proceedings of the southeastcon 2018. ieee, 2018, pp. 1–7. https://www.pnnl.gov/%20main/publications/external/technical_reports/pnnl-21724.pdf https://www.pnnl.gov/%20main/publications/external/technical_reports/pnnl-21724.pdf https://www.sans.org/reading-room/whitepapers/ics/ics-layered-threat-modeling-38770 plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 32, no 1, march 2019, pp. 1-23 https://doi.org/10.2298/fuee1901001p application of python programming language in measurements  predrag pejović university of belgrade, school of electrical engineering, belgrade, serbia abstract. application of python programming language in automation of measurement systems and creating virtual instruments is discussed in this paper. requirements imposed to the software in order to perform these tasks are listed, and python modules that support them are presented. application of proposed techniques are illustrated in seven examples in different application areas. analysis of software evolution, as well as the evolution of professional education yields conclusion that application of python in automating measurement systems is promising. key words: computerized instrumentation, electric variables measurement, impedance measurement, measurements, measurement techniques, software measurement. 1. introduction over the years it exists, software evolved. at the beginning of computers, the program was not stored in the machine, instead the functionality had been hard wired for each application. a great step forward occurred with stored programs, at first written in a machine language. such languages are considered as the first generation of programming languages. the second generation of programming languages involves assembly languages, somewhat more readable than the machine languages, but still heavily dependent on particular instruction set architecture. finally, the third generation of programming languages, a prominent example of which was fortran, which appeared among the first in this generation and gained huge popularity, provided abstraction that separated programmer from the machine instruction set architecture, enabling code portability. with portable code, software libraries appeared, accumulating knowledge and programming experience, and programming became a social activity. high level libraries, like libraries for numeric computation, are nowadays very rich and complete, and it is the most likely that an everyday problem a programmer faces is already solved and included in a library. in this manner, programming became a social activity: a programmer relies on program development tools, such as compilers and integrated development environments, developed by other programmers, received november 12, 2018 corresponding author: predrag pejović university of belgrade, school of electrical engineering, 73 kralj aleksandar blvd, 11000 belgrade, serbia (e-mail: peja@etf.rs)  2 p. pejović as well as software libraries, if he or she wants to program efficiently. this focused programming to solving specific tasks, while general, frequently encountered problems, already have readily available library solutions. this led to ―gluing‖ languages, designed to provide efficient inclusion of library solutions, and to glue them together to solve a specific problem. evolution of software libraries, growing in size and capabilities on daily basis, further supported this concept. a prominent example of a programming language that supports ―gluing‖ concept is python [1]. designed to be readable, with simple and clear syntax, while highly extensible by inclusion of software libraries, named modules, which can be used comfortably using a convenient namespace system. python modules can be written in python, but also in c or c++. furthermore, it is possible to link fortran libraries to python modules. in this manner, a wast software heritage could be efficiently used in python applications. a huge list of useful modules are included in python standard library [2]. the modules used in applications focused in this paper are [3–6]. however, real power of python is in the fact that it enables easy and straightforward inclusion of user contributed modules, outside the python standard library. application of python in measurements relies on these modules and their flexibility to adjust to current trends in development of electronics measurement equipment. review of such external modules [7–17] needed for automating electrical measurements and for creating virtual instruments is presented in this paper. furthermore, the author of this paper contributed some modules [18–20]. along with the evolution of computers and computer languages, the people who use computers evolved, too. in serbia, the last generations that did not learn programming in their high school are getting retired nowadays, and the first generations that learned machine languages, assembly languages, fortran, cobol, and basic in their high school (―programmer‖ high school specialization in serbian high school curricula, lasted from 1977 to 1989) are about 10 years to retirement. python is about to start to be taught in the sixth grade in elementary schools, and many schools and universities worldwide use python as the first programming language. very soon we might expect every professional in any of the technical or science disciplines to be proficient in programming, and the most likely, in python programming language, which is rapidly becoming a standard language for high level programming. many social obstacles are present in automating measurement processes and creating virtual instruments at the time this article is being written. the driving force of this impediment are particular human interests, the process common to automation of any kind. effects of such temporary impediment are expected to vanish, as they vanished in any other automation process. for example, nowadays simple electrical measurements are performed by a digital multimeter, which contains a microcontroller to process the data. another example involves building construction, where distance measurements just a few years ago were dominated by measuring tape, while nowadays almost everyone uses digital laser distance meter, being a digital device. on the other end of the process, the measured data are processed by a computer. who connects the two? in some cases, still a human, collecting the data, writing it down to a notebook, typing it back to a computer. such jobs are likely to disappear, since computer connectivity enabled multimeters are already available. common and standardized communication protocols, preferably wireless, and standardized data processing software are still needed, but they are likely to appear, since there are no technological obstacles to provide them. another option application of python programming language in measurements 3 provided by computer supported measurements is creation of virtual instruments. as an example, consider a digital oscilloscope which is a common piece of equipment in any lab and provides signal samples. by acquiring these samples and by processing them on a computer, power, apparent power, reactive power, power factor, displacement power factor, and total harmonic distortion could be measured, which creates virtual instruments that can measure quantities the oscilloscope initially could not measure. current state in evolution of measurement equipment, computers, and the people who operate both is such that one might expect that most of the measurements in future would be electronics based, and that the measurement results would be presented in a digital form. furthermore, all the data are already processed by computers. connectivity between instruments (which are computers in their construction, microcontrollers), and data processing computers is likely to increase to the level when it becomes an assumed part of any instrument. some knowledge of programming is already assumed, and it is likely that in a decade every professional would be proficient in python, limiting the need for graphical programming languages in measurement applications, enabling all the necessary programming tasks to be performed in a general purpose programming language, not requiring any specialized knowledge nor training. all these facts suggest that python is a convenient choice for a programming language to support measurement automation and virtual instruments. such conclusion spontaneously and independently appeared in many places, resulting in significant amount of available literature, like [21–27]. according to available literature, it seems that at the moment application of python in measurements is the most popular in advanced scientific experiments. examples of applications which might find approach proposed in this paper useful are [28–32]. this paper is written at the tenth anniversary of the author's use of python in electrical measurements for measurement automation and creation of virtual instruments. all measurements for the experimental results in [33] and all the papers aggregated in it are performed using virtual instruments that post-process the data collected using a digital oscilloscope. the software is ported to python, as presented in [34]. furthermore, the same technology is used to create different instruments and systems in [35–40]. this paper aggregates gained experiences and lists all the modules and techniques necessary to design automated measurement systems and virtual instruments, providing some examples. the choice of tools is made to minimize requirements to application specific knowledge, and such that all the tools are free software. 2. requirements imposed by automated measurement systems and virtual instruments at first, let us review functionality required by the design of automated measurement systems and virtual instruments. at first, communication with instruments should be provided in full duplex, proving computers with an ability to send commands to instruments as well as to receive data containing measurement results. the idea is not new, it originated in late 1960s [41], emerging with hp-ib, later renamed to gpib after a wide acceptance, finally standardized as iee 488 and ieee 488.2. thus, about half a century ago it had been evident that measurements are time consuming and boring, and that these processes should be automated connecting instruments to a computer. 4 p. pejović standardization of commands followed, resulting in scpi commands in 1990 [42, 43], almost three decades ago. nowadays gpib still exists, however the interface is somewhat outdated, being expensive, requiring expensive cables, thus being replaced by general purpose higher bandwidth standard interfaces like usb and ethernet, where highly applicable communication hardware is available at low prices due to high production volume. the second task to be performed is data processing and storage. computers are efficient in that, and many libraries to perform these tasks exist, as well as database utilities which may be required in the case huge datasets are being processed. the third task is data visualization, since providing graphical representation of measurement results is frequently required. the fourth group of tasks which are always required covers timestamping and time control, like providing necessary delays for the system to reach the steady state or providing timed measurements at required time instants, like in climate parameters monitoring. also, in free software, which is in the focus of this paper, it is common practice to use other general purpose tools to provide specific functionality of the designed system. in an example which will be covered in this text, for automatic report generation a text processing system latex is used. to provide such functionality, communication to the operating system should be provided, to start other programs and to control their execution. in some cases, graphical user interface is needed, especially in cases when the designed system is going to be used by less qualified personnel or by many people, so tools for providing this functionality should be available. for all of the listed tasks, appropriate python modules are already available as free software. in some cases, experimental hardware should be reconfigured during the measurement process, like in the cases where devices under test should be switched or a reference value should be changed. an inexpensive way to do that is to use the arduino platform [44], which could be easily controlled by a python program using [17]. arduino mega [45] board is of special interest, since it provides a huge number of 54 digital inputs and outputs at a moderate price. 3. python modules useful for automated measurements and virtual instruments 3.1. communication with instruments as already discussed, communication with instruments reduces to exchange of ascii strings when the instruments support scpi [42, 43] commands. thus, while considering instrument purchase, support of scpi should be an important issue, since it enables the user to create his or her own programs to control the instrument. nowadays, the most popular means to communicate to instruments are by usb and by ethernet, which is also an issue in instrument selection. communication over the usb interface is provided using usbtmc protocol [46]. python support for this protocol is provided by python-usbtmc module [7]. in [47], a script to install python-usbtmc on gnu/linux debian-based systems (tested on ubuntu and linux mint distributions) is provided. the module provided effective communication to agilent 33220a signal generator [48], tektronix tbs 1052b-edu oscilloscope [49], which is in everyday use in laboratory for electronics at the school of electrical engineering, university of belgrade, in electrical measurements class [50], as well as the application of python programming language in measurements 5 multimeter [51]. a python module used to support communication and control of the oscilloscope [49] is given in [18]. communication over ethernet is provided using vxi-11 protocol [52], implemented in python-vxi11 module [8]. the module has been successfully used in [38] in communication with [48] and [53], and is in everyday use in [50, 54]. another popular communication interface used with older equipment is the rs-232 interface. communication over that interface is supported by python-serial [9] module. besides, this module supports communication over usb to some devices, like the arduino boards [44]. a python class that supports communication to tektronix oscilloscope is provided at [19], and it had been used successfully with tds 210, tds 220, tds 1000, and tps 2024 oscilloscopes. providing communication to measurement equipment is the most specific part of the measurement automation and the design of virtual instruments as proposed in this paper. after the communication has been established, everything else is common generalpurpose programming. communication to instruments according to scpi [42, 43] reduces to exchange of ascii strings, and conversion of such strings is readily available in python even with built in functions, which might be supported with string module of the python standard library if some more complex string operations are needed. 3.2. data processing data processing required by measurement methods is readily provided in python using numpy module [10], primarily. the module provides numerically efficient array objects and operations over these objects, including basic linear algebra and fft, among other numerical methods. in the case some advanced numerical algorithms are needed, scipy library [11] is available, although most of the tasks are performed by numpy. it is worth to mention that pylab programming environment with namespaces set to provide user friendly numerical programming environment is available [12], although recently deprecated for encouraging old fashioned programming styles. in the case excessive data analysis is necessary, pandas module is available [13]. 3.3. data visualization to provide data visualization in python matplotlib [14] seems to be the best known tool. it provides data plotting, both 2d and 3d, and saving the diagrams in a plethora formats. it should be noted that there are other, both well known and mature tools available. 3.4. timestamping and time control access to the system clock is provided by time module of the python standard library [3]. the module is intuitive and comfortable to program with. in both of the python versions, 2 and 3, modules with the same names are available for the tasks required by applications considered in this paper, and only versions of modules for python 2 are cited in this document, assuming equivalent module availability for version 3. 6 p. pejović 3.5. access to other programs in some case, like the automated report generation, it is necessary to access other programs, like latex [55] or convert [56] for image data format conversion. such functionality is provided by sys [4] and os [5] modules of the python standard library [2]. 3.6. graphical user interface design in the case designed system is intended for specific use, with a limited number of experienced users, it is not likely that creating a graphical user interface (gui) would be an interesting option. however, if the audience that uses the program is wider, a gui is required. fortunately, there are many gui development tools and modules available for python, including rapid application development tools. in an example presented in this paper, taken from [38], the gui had been created using tkinter [6] module, being the simplest and already included in the python standard library. other very popular and advanced tools are available, like pyqt [15] and wxpython [16], which might be of interest in more complex designs. 4. supporting programs the use of python programming language in gnu/linux environment provides an option of a simple interfacing with other free software tools. only two of such programs would be mentioned: latex [55] which was used for automatic report generation in [34], resulting in [57], and convert used to convert image data formats provided by the digital oscilloscope, as used in [18]. any other program could easily be invoked from python, and its output used in further processing. 5. the use of arduino platform arduino [44] is a very popular prototyping platform, characterized by free software and open hardware, which greatly fueled its popularity. the platform itself can be utilized as an instrument, either using its built-in ad converters, either connecting external high precision converters. however, a different application would be suggested here, based upon availability of a large number of digital ports which could be configured either as an input or as an output: for reconfiguration of the measurement system, and in some cases to facilitate indication of the system state. easy and direct interfacing with python might be provided using [17], and with [45] up to 54 digital signals could easily be controlled. relays operated by arduino digital output voltage and current levels are readily available, so reconfiguration of measurement system could be easily provided. 6. application examples 6.1. applications in power electronics and electric power power electronics is a principal research area of the author, and he started to use virtual instrumentation in power electronics, to support research in three phase rectifiers that resulted in a number of papers aggregated in [33]. the measurements required to application of python programming language in measurements 7 support the research included measurement of power, apparent power, reactive power, power factor, displacement power factor, total harmonic distortion, and efficiency. additionally, characterization of components, like recording magnetizing curves and analyzing component constitutive relations and losses were required. specific equipment to perform these tasks are nowadays available, but being narrow in application and highly expensive. for the research purposes, virtual instruments had been created, performing digital post-processing of recorded waveforms. after the python based instrumentation had been introduced, being entirely based on free software, the methods had been ported to education, to laboratory exercises in power electronics 2 [34]. to illustrate automation of measurement process, a 92-page measurement report is automatically generated during a lab exercise that lasts for only two hours, an example being available at [57]. as an example, in fig. 1 waweforms of voltages and currents at the 6-pulse three-phase rectifier inputs are presented, and their spectra are given in fig. 2. effects caused by commutation of the diodes, like the notches in the input voltages and limited slope in the input currents are observable. in the spectra, absence of harmonic components at triples of the line frequency is observable, that matches analytical results. to improve the input current spectra and to reduce the harmonic pollution, 12-pulse rectifiers are applied, and waveforms that correspond to this rectifier are presented in fig. 3, while corresponding spectra are given in fig. 4. reduced distortion is readily available. collected samples are used to determine input power, output power, efficiency, power factor, displacement power factor and total harmonic distortions (thd) of the input currents and voltages. signal processing is simplified by the fact that the system frequency is the line frequency, known in advance, and taking an appropriate number of samples spectral leakage is avoided. in systems with variable frequency this issue should be considered, and it will be discussed in this paper in the section that covers frequency response measurement. fig. 1 waveforms of the input currents and voltages, 6-pulse rectifier 8 p. pejović fig. 2 spectra of the input currents and voltages, 6-pulse rectifier fig. 3 waveforms of the input currents and voltages, 12-pulse rectifier application of python programming language in measurements 9 fig. 4 spectra of the input currents and voltages, 12-pulse rectifier a direct application of the same technology, with minor extension to provide timed measurement and timestamping, is presented in [35], where long lasting measurements, over a week, of the line voltage and its total harmonic distortion (thd) were provided. a diagram presenting measured thd values is presented in fig. 5, indicating periodic behavior during working days, while having a specific pattern during weekends. to provide the diagram of fig. 5 measurements were made every minute over a week, and 10080 data points are collected and presented. to illustrate daily variations of the thd, the waveform of fig. 5 in the part that corresponds to workdays is plotted in fig. 6 such that the curves are plotted for each day one atop another. close to periodic behavior could be observed, illustrating effects of human daily activities on the voltage thd. on the other hand, the thd exposes a different pattern during weekends. to illustrate that, the same methodology as for the workdays, presented in fig. 6 is applied, and the results is presented in fig. 7. significant reduction of the bump from 08 to 16 hours could be readily observed, corresponding to the reduction of business activity during weekends. for the rest of the day, the thd profile remained about the same. 10 p. pejović furthermore, the software based virtual instrument is able to record root-mean-square (rms) value of the phase voltage at every point. measurements are made over a week every minute, and the resulting phase voltage histogram is presented in fig. 8. in this manner, registration of the phase voltage is obtained applying general purpose instruments and some controlling software that provides measurement automation and timestamping. fig. 5 thd of the phase voltage fig. 6 thd of the phase voltage, workdays application of python programming language in measurements 11 fig. 7 thd of the phase voltage, weekend fig. 8 hystogram of the phase voltage rms value proposed measurement methods were extended to cover both measurement and control of a solar power generator, aiming maximum power point tracking of the solar panel [36]. rapid prototyping is achieved using general purpose instruments and a personal computer to close the loop, which was possible due to the low frequency dynamics in the loop. as a part of the same project, a solar power harvester is designed as 12 p. pejović presented in [37], where the solar panel is kept at the maximum power point by an adjustable resistive load, and harvested power is measured in order to estimate average, minimum and maximum power that could be harvested in the specified location as it depends on weather conditions. 6.2. dc voltage calibrator a different application of the proposed methods is presented in [38] where design of a special instrument is approached using the software tools. a dc voltage calibrator was needed, being an expensive instrument, narrow in application, not worth purchasing for the particular application. a substitution is created closing a loop that included two general purpose instruments, a programmable signal generator [48] and a highly precise multimeter [53]. the system is presented in fig. 9. the voltage assigned to the signal generator is adjusted in order to generate required voltage, and improvement in accuracy of two orders of magnitude is achieved, placing the generated voltage error within about 500 v limit, as depicted in fig. 10. the data of fig. 11 contain 20001 data points, obtained using an automated system which loops the required calibrator output voltage over all possible values in the available range. just assuming 30 seconds of manual work per data point, which is fairly optimistic, the measurement process would last for more than 165 man hours. since the instrument was intended for use by less qualified personnel, a graphical user interface (gui) is built using tkinter [6] module. the choice is made considering the application as low demanding, not requiring rapid application development tools, and having in mind that tkinter module is a part of the python standard library [2]. a screenshot of the resulting gui is shown in fig. 11, and it presents assigned voltage, measured voltage, and the voltage assigned to the generator, which is an intermediate step governed by the feedback loop. in the example of fig. 11 an offset of 23 mv had to be added to compensate for the signal generator error and to locate the calibrator error within 500 v limit. fig. 9 the calibrator system application of python programming language in measurements 13 fig. 10 voltage error, closed loop calibrator fig. 11 graphical user interface of the calibrator 6.3. applications in education developed techniques proved to be successful in education, since free access to all of the source codes is available, the code could be analyzed in classes and shared to students, and the time spent in the laboratory, limited due to the huge lab burden, could be effectively utilized, illustrating key concepts instead of spending time on trivial repetitive tasks. the first application of the proposed methods in education is made in power electronics 2 [34], where lab exercises were introduced to illustrate the theory presented in the course, as shown here by figs. 1–4. after this successful implementation, course of electrical measurements [50] is reformed, as reported in [39]. after a year, the course is further updated, since new oscilloscopes were obtained, providing much faster data acquisition, enabling introduction of even more experiments since the intellectually and educationally idle processing time had been reduced further. a set of nine new laboratory exercises is created [54]. according to student questionnaires, they enjoyed the concept which reduced hard work and increased the number of experiments, focusing to the essence instead to the trivia. 14 p. pejović 6.4. measurement of frequency response another application example of the proposed techniques, used both in education [39, 50] and in practice is an automated system for frequency response measurement [40]. the system is intended to measure frequency response of transmittance and immittance, and a numerically intensive technique is used to measure amplitude and phase, extracting the first harmonic. such approach is applied to remove influence of noise in the amplitude and phase measurements, which is going to be illustrated as significantly present in measurements encountered in practice. in this manner, precise measurements are obtained, since all of the collected samples affect the result, filtering the noise out. the algorithm starts with selecting the time scale such that the the minimal number of signal periods is covered by the oscilloscope time frame. the frequency is assigned to the signal generator, being an independent variable, thus the signal period is known. time span of the oscilloscope screen belongs to a discrete set of values achievable by the given oscilloscope, and the span that includes the lowest number of whole signal periods is selected, determining the oscilloscope time scale. for the oscilloscope applied [49] the number of periods covered by a screen is either one or two, depending on the signal frequency, as depicted in fig. 12. fig. 12 number of periods covered by the oscilloscope screen after the time scale has been selected, the number of samples taken into account is computed by rounding spanper ttn 02500  , where 2500 is the number of samples per time frame for the given oscilloscope, nper is the number of signal periods per time frame, shown in fig. 12, t0 is the signal period, and tspan is the time span covered by the time frame. the number of samples is solely dependent on the signal frequency, and the diagram is shown in fig. 13. in [40], an older version of the algorithm is presented, reducing the scope to only one signal period, but in cases when more than one signal period is covered by the oscilloscope screen, due to the limitations imposed by the discrete set of available time scale values, better results are obtained by taking two periods into account, and the improved algorithm is presented in this paper. application of python programming language in measurements 15 fig. 13 the number of considered samples the algorithm assumes that the number of considered samples ns is known, and that samples of signals x(t) and y(t) are available as xk and yk for k  {0, ... ns  1}. waiting functions are computed next, according to          s perk n k nc 2cos2 (1) and          s perk n k ns 2sin2 (2) according to the fourier analysis, for signal  tx cosine component is obtained as     1 0 1 sn k kk s c cx n x (3) while the sine component is     1 0 1 sn k kk s s sx n x . (4) after the cosine and sine components are determined applying the fourier analysis, effectively filtering the noise out, the signal amplitude is obtained as 22 scm xxx  (5) and the phase is obtained as atan 2( , )x s cx x  (6) 16 p. pejović using the 2atan function that takes two arguments and provides the result in the range ( , ]  . the same signal processing is performed over signal y(t), resulting in values of yc, ys, ym, and y . finally, the transfer function magnitude is obtained as 0( ) m m y h j x   (7) and the phase is obtained as xyh  0 (8) the value 0h is named ―raw phase‖ since it takes value in the range  22 0  h since   yx , . the value is correct, due to the phase periodicity over 2 , but it is convenient to provide the phase value in the range   h . in this aim, phase adjustment by appropriate shifting for 2 is performed according to          .2 2 00 00 00     hh hh hh h (9) this concludes the algorithm for the one point, for the specified frequency value. the algorithm is repeated for specified frequency range and the specified number of data points. as the first example, consider a circuit of fig. 14, used to illustrate frequency response effects caused by the capacitor, to identify frequency range where it behaves approximately as an open circuit and the range where it behaves approximately as a short circuit. the program is run, and the frequency response is obtained as presented in the diagram of fig. 15, clearly indicating areas of flat frequency response where the capacitor could be considered either as open circuit, bellow 1 khz in the considered case, or as short circuit, which occurs above 100 khz in the considered case. fig. 14 the circuit,  k121 rr , nf101 c application of python programming language in measurements 17 fig. 15 frequency response of the circuit the same system could be used for immittance measurements, for impedance and admittance, using the circuit of fig. 16. in the circuit of fig. 16 r is used as a reference resistor, and the current through the measured impedance is computed as r vv i 21  (10) the same data processing algorithm as for the transfer functions is applied, taking signals v2(t) and i(t) as y(t) and x(t) if impedance computation is the goal. application of the method to analyze electronic components provides insight in their operation and suggest suitable modeling strategies. as an example, in fig. 17 frequency response of a capacitor c = 1 nf impedance is presented. the result matches expectations, and barely noticeable deviations of measured phase from 90 o at the beginning and at the end of the diagram are caused by a huge difference of the capacitor impedance at considered frequency and the impedance reference of r = 20 k. this is expected, since measured impedance varies for four decades, i.e. 10 4 times over the considered frequency range, and a constant reference impedance is used. to improve the result, suggested approach that uses arduino to reconfigure the circuit by adapting the reference impedance value to the measured impedance should be applied. fig. 16 circuit structure for impedance measurement; r is the impedance reference value 18 p. pejović fig. 17 frequency response of a capacitor impedance, nf1c in contrast to the capacitor impedance frequency response, which follows the ideal model, impedance of an inductor is presented in fig. 18. the inductor has rated inductance of 10 mh, but it exposes inductive behavior only in the frequency range from about 1 khz to about 200 khz. at low frequencies, parasitic resistance of the winding dominates the impedance, while at high frequencies parasitic capacitance of the winding dominates the response, resulting in capacitor-like frequency response above the resonant frequency of about 400 khz. the results are obtained using a reference resistor of 500 . fig. 18 frequency response of an inductor impedance, mh10l application of python programming language in measurements 19 as a final example that covers impedance measurements, consider frequency response of an electrolytic capacitor impedance, presented in fig. 19. to measure impedance of the electrolytic capacitor, a dc offset of 2 v has been applied, and the measurements are made with 0.5 v amplitude of the signal generator ac component. the capacitor shows dominantly capacitive behavior only at frequencies lower than 300 hz, and in the frequency range from 300 hz to about 300 khz equivalent series resistance slightly above 1  dominates the impedance. above 300 khz, equivalent series inductance starts to dominate the impedance behavior. to illustrate waveforms captured during the measurement process and noise filtering, the waveforms recorded while measuring the electrolytic capacitor impedance at the frequency of 289.087 hz are presented in fig. 20. red trace corresponds to the capacitor current, while the yellow trace is the capacitor voltage. the cyan trace is the input voltage ac component. significant presence of noise in the capacitor voltage waveform could be readily observed. similar situation occurs in the frequency range from 300 hz to 300 khz, when the capacitor voltage is low. regardless the noise, consistent measurements of amplitude and phase are presented in fig. 19, indicating that the noise is successfully removed by the signal processing, not affecting the measurement result. fig. 19 frequency response of an electrolytic capacitor impedance, μf470c 20 p. pejović fig. 20 waweforms recorded during the electrolytic capacitor impedance measurement: yellow — capacitor voltage; red — signal proportional to the capacitor current; cyan — voltage of the signal generator in educational application of [39, 50], measurements of a transmission line transfer function is an experiment that attracts lots of student attention, and has an educational value of connecting courses that cover circuit theory to engineering practice. due to the nature of the problem, linear frequency scale is appropriate, and the transfer function of an open transmission line is presented in fig. 21. resonances and nonlinear phase response could be readily observed. repeating the experiment with properly terminated transmission line, results of fig. 22 are obtained, indicating flat amplitude response and linear phase response, corresponding to close-an-ideal transmission system. fig. 21 frequency response of an open transmission line application of python programming language in measurements 21 fig. 22 fequency response of properly terminated transmission line 7. conclusions in this paper, application of python programming language in creating automated measurement systems and virtual instruments is discussed. it is shown that to create such systems a set of specific tasks should be performed, not frequent in common application programming. the tasks are listed, and the python modules that support performing them are looked for. it is shown that for all of the specific tasks there are python modules readily available, either from the python standard library, either from external sources, some of them highly specialized to support communication with instruments. effective methods of including modules and arranging them in separate namespaces turned out to be useful in considered application. it is also shown that other programs, like latex for text processing might be useful in creating automated measurement tools, to provide automatic report generation, which might be of use in certifying laboratories. the use of arduino platform is proposed to provide measurement system controlled automatic reconfiguration and indication of the system state and performance. tools for controlling arduino platforms directly from python are identified. application of the proposed methods is illustrated in four different areas, as reported by the author in seven papers. applications started in power electronics, and positive experiences spread to metrology, to the design of a dc voltage calibrator, to education, where the methods were used in modernizing two courses, and in measurements of system frequency response, as applied in electronics, acoustics, and control system design. in some of these applications, selection of the time scale and the number of considered samples in the case of variable signal frequency is controlled by an updated algorithm presented in this paper. overall conclusion is that python is an adequate tool for creating automated measurement systems and virtual instruments, due to its modular structure and openness for contribution of modules. in the choice of programming tools, the attention has been 22 p. pejović made to favorize general purpose tools and techniques, to minimize specific knowledge requirements. having in mind evolution of software and the people who work in metrology, it is likely to expect wide application of the proposed approach and methods, which already started in several places independently. references [1] python programming language — official website, [online] available: http://www.python.org/ [2] the python standard library, [online] available: https://docs.python.org/3/library/ [3] time — time access and conversions, [online] available: https://docs.python.org/2/library/time.html [4] sys — system-specific parameters and functions, [online] available: https://docs.python.org/2/library/sys.html [5] os — miscellaneous operating system interfaces, [online] available: https://docs.python.org/2/library/os.html [6] graphical user interfaces with tk, [online] available: https://docs.python.org/2/library/tk.html [7] python-usbtmc, [online] available: https://github.com/python-ivi/python-usbtmc [8] python vxi-11, [online] available: https://github.com/python-ivi/python-vxi11 [9] pyserial, [online] available: https://pythonhosted.org/pyserial/ [10] numpy, [online] available: http://www.numpy.org/ [11] scipy, [online] available: https://www.scipy.org/ [12] scipy: pylab, [online] available: https://scipy.github.io/old-wiki/pages/pylab [13] pandas, [online] available: https://pandas.pydata.org/ [14] matplotlib, [online] available: https://matplotlib.org/ [15] pyqt's modules, [online] available: http://pyqt.sourceforge.net/docs/pyqt4/modules.html [16] wxpython, [online] available: https://wxpython.org/ [17] python-arduino-proto-api-v2, [online] available: https://github.com/vascop/python-arduino-proto-api-v2 [18] p. pejović, oscusb, python module to support communication with oscilloscopes over usb, [online] available: http://tnt.etf.bg.ac.rs/~oe2em/oscusb.py [19] p. pejović, oscusb, python module to support communication with oscilloscopes over rs-232, [online] available: http://tnt.etf.bg.ac.rs/~oe2em/oscrs232.py [20] pr. pejović, oscusb, python module to support presentation of numbers in engineering notation, [online] available: http://tnt.etf.bg.ac.rs/~oe2em/engineeringnotation.py [21] j. m. hughes, real world instrumentation with python: automated data acquisition and control systems. o'reilly media, inc., 2010 [22] g. real, l. raviola, m. f. jauré, and a. o. vitali, ―data acquisition system for didactic laboratories based on open-source hardware and free software,‖ in proceedings of the 2015 xvi ieee workshop on information processing and control (rpic), 2015, pp. 1-6. [23] j. l. johnson, h. t. wörden, and k. v. wijk, ―place: an open-source python package for laboratory automation, control, and experimentation,‖ journal of laboratory automation, vol. 20, no. 1, pp. 10-16, 2015. [24] i. j. koenka, j. sáiz, and p. c. hauser. ―instrumentino: an open-source software for scientific instruments,‖ chimia international journal for chemistry, vol. 69, no. 4, pp. 172-175, 2015. [25] i. j. koenka, j. sáiz, and p. c. hauser. ―instrumentino: an open-source modular python framework for controlling arduino based experimental instruments,‖ computer physics communications, vol. 185, no. 10 pp. 2724-2729, 2014. [26] f. j. f. martín, m. v. llopis, j. c. c. rodríguez, j. r. b. gonzález, and j. m. blanco, ―low-cost open-source multifunction data acquisition system for accurate measurements,‖ measurement, vol. 55, pp. 265-271, 2014. [27] a. j. lewis, m. campbell, and p. stavroulakis, ―performance evaluation of a cheap, open source, digital environmental monitor based on the raspberry pi,‖ measurement, vol. 87, pp. 228-235, 2016. [28] v. davidović, d. danković, s. golubović, s. djoric-veljkovic, i. manić, z. prijić, a. prijić, n. stojadinović, and s. stanković, ―nbt stress and radiation related degradation and underlying mechanisms in power vdmosfets,‖ facta universitatis, series: electronics and energetics, vol 31, no. 3, pp. 367-388, 2018. [29] s. k. mohapatra, k. p. pradhan, and p. k. sahu, ―resolving the bias point for wide range of temperature applications in high-k/metal gate nanoscale dg-mosfet,‖ facta universitatis, series: electronics and energetics, vol. 27, no. 4, pp. 613-619, 2014. [30] s. k. mohapatra, k. p. pradhan, and p. k. sahu, ―ztc bias point of advanced fin based device: the importance and exploration,‖ facta universitatis, series: electronics and energetics, vol. 28, no. 3 pp. 393-405, 2015. application of python programming language in measurements 23 [31] i. manić, d. danković, v. davidović, a. prijić, s. djorić-veljković, s. golubović, z. prijić, and n. stojadinović, ―effects of pulsed negative bias temperature stressing in p-channel power vdmosfets,‖ facta universitatis, series, electronics and energetics, vol. 29, no. 1, pp. 49-60, 2015. [32] x. saura, m. riccio, j. suñé, a. irace, and e. miranda, ―study on the spatial generation of breakdown spots in mim capacitors with different aspect ratios,‖ facta universitatis, series electronics and energetics, vol. 28, no. 2 pp. 177-192, 2015. [33] p. pejović, ―three-phase diode rectifiers with low harmonics current injection methods,‖ springer, 2007. [34] p. pejović, m. simić, ―virtual instruments for power electronics based on free software tools,‖ in proceedings of the17th international symposium on power electronics, ee 2013, novi sad, october-november 2013. [35] p. pejović, m. simić, ―a system for measuring mains voltage parameters and logging the data,‖ in proceedings of the 18th international symposium on power electronics, ee 2015, novi sad, october 2015. [36] v. lazarević, m. bjelica, p. pejović, ―maximum power point tracking control system of photovoltaic module using free software and standard laboratory equipment,‖ in proceedings of the 18th international symposium on power electronics, ee 2015, novi sad, october 2015. [37] p. pejović, m. bjelica, ―a simple system to estimate on-site solar energy harvesting,‖ in proceedings of the 18th international symposium on power electronics, ee 2015, novi sad, october 2015. [38] p. pejović, a. zeković, ―software supported dc voltage calibrator,‖ in proceedings of the xi international symposium industrial electronics, indel 2016, banja luka, november 3-5, 2016. [39] p. pejović, ―electrical measurements revisited — experiences from modernizing the course,‖ in proceedings of the ieee eurocon 2017, ohrid, republic of macedonia, 6-8 july 2017, pp. 838-844. [40] p. pejović, ―an automated system for frequency response measurement based on free software tools,‖ in proceedings of the xii international symposium industrial electronics, indel 2018, banja luka, november 1-3, 2018. [41] wikipedia contributors, ieee-488, [online] available: https://en.wikipedia.org/wiki/ieee-488 [42] wikipedia contributors, standard commands for programmable instruments, [online] available: https://en.wikipedia.org/wiki/standard_commands_for_programmable_instruments [43] standard commands for programmable instruments (scpi), [online] available: http://www.ivifoundation. org/docs/scpi-99.pdf [44] m. banzi, getting started with arduino, second edition, o’reilly media, 2011 [45] arduino mega 2560 rev3, [online] available: https://store.arduino.cc/arduino-mega-2560-rev3 [46] universal serial bus test and measurement class specification (us-btmc), revision 1.0, april 14, 2003, [online] available: http://sdpha2.ucsd.edu/lab_equip_manuals/usbtmc_1_00.pdf [47] p. pejović, usbtmcinstall.zip, [online] available: http://tnt.etf.bg.ac.rs/~oe2em/usbtmcinstall.zip [48] agilent technologies agilent 33220a 20 mhz waveform generator user’s guide, [online] available: http://cp.literature.agilent.com/litweb/pdf/33220-90002.pdf [49] tbs1000b-edu series datasheet, [online] available: https://www.tek.com/datasheet/digital-storageoscilloscope-0 [50] p. pejović, electrical measurements, course web site, [online] available: http://tnt.etf.bg.ac.rs/~oe2em/ [51] keysight technologies digital multimeters, 34460a digital multimeter, 6 (1/2) digit, basic truevolt, [online] available: https://literature.cdn.keysight.com/litweb/pdf/5991-1983en.pdf [52] vmebus extensions for instrumentation tcp/ip instrument protocol specification vxi-11, revision 1.0, the vxibus consortium, 1995, [online] available: http://www.vxibus.org/files/vxi\_specs/vxi-11.zip [53] agilent 34410a and 34411a multimeters, [online] available: http://cp.literature.agilent.com/litweb/pdf/ 59893738en.pdf [54] p. pejović, ―laboratorijske vežbe iz električnih merenja‖ [online] available: https://zenodo.org/record/ 1311557/files/prirucnik.pdf?download=1 [55] ctan comprehensive tex archive network, [online] available: https://ctan.org/ [56] imagemagick convert, [online] available: https://imagemagick.org/script/convert.php [57] twelve pulse rectifier lab report example, [online] available: http://tnt.etf.bg.ac.rs/~ms1ee2/report-12-pulse2.pdf facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. 71-92 https://doi.org/10.2298/fuee2201071p © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper possibilistic uncertainty assessment in the presence of optimally integrated solar pv-dg and probabilistic load model in distribution network shradha singh parihar, nitin malik the northcap university, gurgaon, india abstract. to integrate network load and line uncertainties in the radial distribution network (rdn), the probabilistic and possibilistic method has been applied. the load uncertainty is considered to vary as gaussian distribution function whereas line uncertainty is varied at a fixed proportion. a voltage stability index is proposed to assign solar pv-dg optimally followed by application of pso technique to determine the optimal power rating of dg. standard ieee 33and 69-bus rdn are considered for the analysis. the impact of various uncertainties in the presence of optimally integrated solar pv-dg has been carried out on 69-bus network. the results obtained are superior to fuzzy-arithmetic algorithm. faster convergence characteristic is obtained and analyzed at different degree of belongingness and realistic load models. the narrower interval width indicates that the observed results are numerically stable. to improve network performance, the technique takes into account long-term changes in the load profile during the planning stage. the significant drop in network power losses, upgraded bus voltage profile and noteworthy energy loss savings are observed due to the introduction of renewable dg. the results are also statistically verified. key words: distribution network, distributed generation, optimal integration, uncertainties, interval arithmetic, gaussian distribution function 1. introduction 1.1. motivation and literature review the distribution network is ill-conditioned because of low x/r ratio and its radial structure. thus, the conventional approaches like newton-raphson, gauss-seidel, etc, for solving power flow (pf) problem in the transmission network fails to converge in many cases in distribution network. to compute bus voltage and power flow values, deterministic pf algorithm requires precise network (n/w) load and generation data. it does not received february 23, 2021; received in revised form april 12, 2021 corresponding author: nitin malik the northcap university, gurgaon, india e-mail: nitinmalik77@gmail.com 72 s. s. parihar, n. malik contribute to optimal planning and operation of the n/w, as it finds the pf results for specific n/w configuration and operating conditions only at a given instant. the emphasis is on integrating distributed generation (dg) into the distribution n/w due to socioeconomic, environmental, and technical constraints. dg is a decentralized generation of electric power in distribution n/w using non-renewable (turbine, engine, etc.) or renewable (small/micro/mini hydropower, wind, solar, fuel cell, geothermal, etc.) resources. as the output of these technologies depicts stochastic behavior, hence, capable to introduce significant uncertainty in total power production. in real, the networks are complex due to the presence of non-linearity and incapability in expressing n/w variables in very precise terms which can be simplified by either allowing some degree of uncertainty or making assumptions about the distribution n/w. the input parameters (n/w load, line, and transformer data) are considered to be fixed while performing power grid operations, however they are not in practise. because of the erroneous calculation of reactance and resistance due to conductor ageing and temperature variation, there is ambiguity in n/w line data. the load uncertainties are caused due to incorrect estimation in load demand (load forecasting). changes in climate and water runoff induce uncertainty in hydropower plants. temperature sensitivity in a fuel cell creates uncertainty since temperature change has a stronger impact at higher current [1]. this varies the power flow in the radial distribution network (rdn). these uncertainties are modeled either using a possibilistic or probabilistic method. monte carlo simulation (mcs) and stochastic approach belongs to probabilistic domain whereas interval arithmetic (ia) and fuzzy sets comes under possibilistic methods. ia establishes a strict constraint on all feasible n/w circumstances that could have been achieved by hundreds of successive mcs; as a result, the mcs calculation time increases, making analysis more difficult. with little computational effort, ia can produce highquality results. probabilistic and possibilistic modelling is quantitative and qualitative in nature, respectively [2]. probabilistic method is used where sufficient historical data of uncertain parameter or their probability density function (pdf) like load pattern, wind speed and solar irradiation [3] is easily available whereas possibilistic modelling is preferred when the data available is not sufficient for the planners and operators to establish pdf [3]. both the methods are cooperative and their utilization provides more realistic approximation to n/w modelling. the approaches for integrating dg are generally categorized as analytical and heuristic methods. the analytical method makes use of mathematical equations to determine the optimum solution. an analytical method for evaluating dg in n/w is presented in [4] without considering cost benefits. many numerical approaches like kalman filter algorithm [5] and mixed integer non-linear programming [6] are applied to integrate dg optimally in the rdn. authors in [7], demonstrated an analytical and a meta-heuristic approach to optimally allocate dg units in the rdn. numerous evolutionary algorithms such as grey wolf optimizer [8], pso [9] and gravitational search algorithm [10] and have been employed for solving issues related to dg allocation in the rdn. an ant lion optimization algorithm [11] is demonstrated to optimally allocate dg in the rdn. authors in [12], utilized augmented lagrangian genetic algorithm to integrate renewable dgs for minimizing n/w losses, satisfying operational constraints without considering economic benefits. in [13], author implements an ia technique to incorporate load uncertainty in the distribution n/w considering constant power load only. a correlated interval-based uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 73 backward/forward (b/f) pf method is developed in [14] to consider uncertainties in renewable energy resources. the interval-based pf models are transformed into the optimization problem in [15] which minimizes the conservatism of the obtained interval solutions. an affine arithmetic method is projected in [16] to introduce n/w uncertainties of different types. a probabilistic distribution-based ia approach is presented in [17] to introduce uncertainty in load demand in conventional pf. authors in [18], demonstrated the ia based pf analysis in the presence of load, line and dg uncertainties. the analysis has also been done with various types of dg units that are not optimally allocated. abdelkader et al. [19] proposed a fuzzy arithmetic algorithm (faa) for incorporating uncertainties in the rdn. triangular fuzzy number method is proposed in [20] to introduce uncertainties in the n/w but resulted in higher n/w loss. to deal with n/w uncertainties a new midpoint-radius interval-based approach has been demonstrated in [21] to eliminate the factorization of the interval jacobian matrix. 1.2. paper contributions from the previously published literature, it has been concluded that the combined use of the interval arithmetic and probabilistic load model with optimally integrated solar photovoltaic (pv) dg in distribution n/w has not been explored before. using the hybrid possibilistic-probabilistic strategy, this research article contributes to the published literature. the optimal penetration of solar pv-dg is carried out using a novel voltage stability index (vsi) and pso method and, thereafter, the n/w uncertainties (line and load) are introduced in rdn to demonstrate the possible states of the solution. the detailed investigation considering various realistic loads and load fluctuations with and without solar pv-dg have been presented. the presented approach is applied on well-established standard ieee 69-bus n/w. two case studies considering solar pv-dg without and with n/w uncertainties are analysed and the results of the ieee 33-bus n/w are further compared to faa to establish the effectiveness of the proposed methodology. the summarized article contributions are mentioned below a) a new vsi has been developed for the optimal placement of solar pv-dg in a rdn after which pso is implemented to find the optimal size of dg. this independent method for integrating renewable dg gives openness and versatility to the problem. b) a combination of ia and probabilistic load model is applied and presented to attain a more realistic representation of distribution n/w modelling which paves the way for accurate results. c) all input variables (loads and line) and generation in the distribution n/w are represented as random variables. the line uncertainty variables are considered to fluctuate at a constant proportion, whereas load uncertainty is expected to change according to a gaussian distribution function. d) the effect of n/w uncertainties and different realistic loads (industrial, residential and commercial) and their combination with optimally integrated solar pv-dg is analysed by directly incorporating them into the interval-based b/f pf algorithm. e) the analysis of the reduction in n/w losses and the cost of annual energy loss savings (aels) has been carried out at three load levels to aid the distribution n/w operators (dnos) in future n/w planning. f) the attained results of the simulation study imply that the methodology proposed in this research is much more feasible and effective for designing the large-scale rdn at all load levels. 74 s. s. parihar, n. malik 1.3. paper outline the brief outline of the work is given as: in section 2, the description of interval arithmetic is mentioned. in section 3, the modeling of n/w data and dg is presented. in the next section, the working of the pso is explained. section 5 explores the development of the novel vsi and the algorithm to integrate solar pv-dg optimally in the n/w. intervalbased b/f pf solution is attained in section 6. the simulated results for two standard rdn are mentioned in section 7 followed by conclusion in last section. 2. interval arithmetic in contrast to the point estimating technique, a number can be expressed as confidence interval that can be open, closed, or a combination of both in the ia approach. a set of real numbers can be used to express an interval number. let l and k be two separate interval numbers (of real numbers) with supporting intervals of [l1, l2] and [k1, k2]. here, the k1, l1 and k2, l2 signifies the lower limits and upper limits (endpoints), respectively. k2-k1 and l2l1 are the interval widths determined for intervals k and l, respectively. addition, subtraction, multiplication, division, minimization, and maximising are all mathematical operations that may be applied to interval numbers [22]. 𝐾 + 𝐿 = [𝑘1 + 𝑙1, 𝑘2 + 𝑙2] (1) 𝐾 − 𝐿 = [𝑘1 − 𝑙2, 𝑘2 − 𝑙1] (2) 𝐾 × 𝐿 = [𝑚𝑖𝑛. (𝑘1 × 𝑙1, 𝑘1 × 𝑙2, 𝑘2 × 𝑙1, 𝑘2 × 𝑙2), 𝑚𝑎𝑥. (𝑘1 × 𝑙1, 𝑘1 × 𝑙2, 𝑘2 × 𝑙1, 𝑘2 × 𝑙2)] (3) 𝐾 𝐿 = 𝐾 × 𝐿−1 (4) where 𝐿−1= [1/l2, 1/l1] with 0 ∉ [l1, l2]. the distance between k and l is defined as 𝑑(𝐾, 𝐿) = 𝑚𝑎𝑥[|𝑘1 − 𝑙1|, |𝑘2 − 𝑙2|] (5) complex uncertainty can be obtained by representing real numbers in complex domain. the pf study utilizes the above-mentioned fundamental operations to calculate the link between uncertain variables in terms of complex interval numbers. in this research, ia is used to deal with the uncertainties in the n/w data. therefore, reactance, resistance, bus voltage and n/w power loss are taken as interval numbers instead of a fixed value. rather than the fixed variation discussed in section 3.2, the n/w load at a bus is assumed to fluctuate over a specified range based on a gaussian distribution. when the load demand is changing over the interval, the number of pf computations required are lesser than the total number of repeated pf solutions. uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 75 3. mathematical model 3.1. line variation model fig. 1 is a one-line diagram of a branch connecting bus i-1 and bus i. fig. 1 single branch equivalent from fig. 1, 𝑷𝒊 + 𝒋𝑸𝒊 = 𝑽𝒊∠𝜹𝒊. 𝑰𝒊 ∗ (6) where, vi stands for receiving-end rms bus voltage and δi is voltage angle at bus i. the reactive and real power load fed through the ith bus are represented by qi and pi, respectively. every bus, including the source bus, has an initial voltage of [1.0,1.0] +j [0.0,0.0] p.u. since, both power and voltage are complex interval variables, the subsequent current at bus i (𝐼𝑖), as described in (7), is also a complex interval quantity that can be evaluated using the division operation (4). 𝐼𝑖 = [𝑃𝑖𝑙𝑜 ,𝑃𝑖𝑢𝑝]− j [𝑄𝑖𝑙𝑜 ,𝑄𝑖𝑢𝑝] 𝑉𝑖∠−𝛿𝑖 (7) where 𝑃𝑖𝑙𝑜 , 𝑄𝑖𝑙𝑜 and 𝑃𝑖𝑢𝑝 , 𝑄𝑖𝑢𝑝 , respectively, are lower and the higher limits for the real and reactive power load at the ith bus. the n/w real and reactive loss in a branch is 𝑃𝑙𝑜𝑠𝑠(𝑖 − 1, 𝑖) = (𝑃𝑖 2+𝑄𝑖 2) |𝑉𝑖|2 . 𝑅𝑖 (8) 𝑄𝑙𝑜𝑠𝑠(𝑖 − 1, 𝑖) = (𝑃𝑖 2+𝑄𝑖 2) |𝑉𝑖|2 . 𝑋𝑖 (9) the branch reactance and resistance, respectively, are xi and ri. at a constant proportion, the line parameter's uncertainty can be introduced as 𝑋𝑖𝑙𝑜 = (1 − %(𝑋)). 𝑋𝑖 (10) 𝑋𝑖𝑢𝑝 = (1 + %(𝑋)). 𝑋𝑖 (11) 𝑅𝑖𝑙𝑜 = (1 − %(𝑅)). 𝑅𝑖 (12) 𝑅𝑖𝑢𝑝 = (1 + %(𝑅)). 𝑅𝑖 (13) where 𝑅𝑖𝑙𝑜, 𝑋𝑖𝑙𝑜 and 𝑅𝑖𝑢𝑝, 𝑋𝑖𝑢𝑝 are the lower and the upper constraints on the n/w resistance and reactance, respectively. 76 s. s. parihar, n. malik 3.2. variation in load model in the rdn, the majority of the loads are frequency and voltage-dependent [23]. for analyzing static load, only variation in voltage is considered as deviation in frequency is not significant [24]. the load model generally chosen is complex power type, but in reality, the load is a combination of numerous load models. therefore, this study aims at evaluating the impact of realistic load models viz. industrial, residential and commercial loads in the distribution n/w that is particularly important for dnos in various planning scenarios. the considered load models can be expressed mathematically as [25]. 𝑃𝑖 = 𝑃𝑖𝑛𝑜 . ( |𝑉𝑖| |𝑉𝑖𝑛𝑜| ) 𝑥1 (14) 𝑄𝑖 = 𝑄𝑖𝑛𝑜 . ( |𝑉𝑖| |𝑉𝑖𝑛𝑜| ) 𝑥2 (15) where x1 and x2 are the load exponents. 𝑄𝑖𝑛𝑜 is the nominal reactive load, 𝑃𝑖𝑛𝑜 is the rated real load and 𝑉𝑖𝑛𝑜 is the rated bus voltage at the ith bus, respectively. in the present study, the real and reactive exponents taken for constant power load (cpl), industrial load (il), residential load (rl) and commercial load (cml) model are 0 & 0, 0.18 & 6.00, 0.92 & 4.04 and 1.51 & 3.40, respectively [25]. as practically any type of load might present in the n/w, therefore, composite load (cl) model is considered for the analysis with 40% of cpl, 30% of il, 20% of rl and 10% of cml [25]. the gaussian distribution function is utilized to predict the change in n/w power load demand. the gaussian distribution is a symmetric mean-value distribution with a bellshape and mentioned as (16) 𝑓(𝑦𝑖) = 1 √2𝜋𝜎2 𝑒− 1 2 (𝑦𝑖−𝜇)² 𝜎² (16) where random variables 𝜎2 and μ are distribution parameters that represents variance and mean (expected) value of the base loads, respectively. the variance represents how much the random variable is expected to deviate from its mean value (in a certain percentage). the normalised value of the reactive or real power load at bus i of the considered network is given by yi, which can be given as in [17]. 𝑦𝑖 = 𝑃𝑖 𝑃𝑖𝑛𝑜 and 𝑦𝑖 = 𝑄𝑖 𝑄𝑖𝑛𝑜 (17) where, (14) and (15) defines 𝑃𝑖 and 𝑄𝑖 , respectively. 𝛼𝑞𝑙(𝑘) and 𝛼𝑝𝑙(𝑘) are the degree of belongingness for reactive and real power load, where k indicates a number of degree of belongingness. from the load curve illustrated in fig. 2 the mean value of the normalized real and reactive power load is unity for the degree of belongingness 1.0. the degree of belongingness can have any value between plmax / n and plmax where, the number of points of linearization of the gaussian curve is denoted by n and plmax is the maximum degree of belongingness. the gaussian distribution curve for a real power load is depicted in fig. 2 [17]. uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 77 fig. 2 gaussian distribution of load equation (16) can be written as 𝛼𝑝𝑙(𝑘𝑑) = 𝑓 [ 𝑃𝑖 𝑃𝑖𝑛𝑜 ] = 1 √2𝜋𝜎2 𝑒 [ 𝑃𝑖 𝑃𝑖𝑛𝑜 −𝜇] 2 2𝜎2 ⁄ (18) from equation (18), we get 𝜎 = 0.399 for µ = 1.0 and 𝛼𝑝𝑙(𝑘𝑑) = 1.0. for these values, equation (18) can be written as 𝑃𝑖 𝑃𝑖𝑛𝑜 − 1 = ±√ −ln (𝛼𝑝𝑙(𝑘𝑑)) 𝜋 for 𝑃𝑖 𝑃𝑖𝑛𝑜 ≠ 1 (19) similarly, for reactive load 𝑄𝑖 𝑄𝑖𝑛𝑜 − 1 = ±√ −ln (𝛼𝑞𝑙(𝑘𝑑)) 𝜋 for 𝑄𝑖 𝑄𝑖𝑛𝑜 ≠ 1 (20) right hand side of equation (19) and (20) can be specified as √ −ln (𝛼𝑝𝑙(𝑘𝑑)) 𝜋 = 𝛼𝐾 = √ −ln (𝛼𝑞𝑙(𝑘𝑑)) 𝜋 (21) thus, (19) can be rewritten as 𝑃𝑖 𝑃𝑖𝑛𝑜 = 1 ± 𝛼𝐾𝑑 (22) 𝑃𝑖 = 𝑃𝑖𝑛𝑜 (1 ± 𝛼𝐾𝑑 ) (23) where ± sign gives a lower and upper constraints of the n/w load at bus i. 𝑃𝑖𝑙𝑜 = 𝑃𝑖𝑛𝑜(1 − 𝛼𝑘𝑑 ) (24) 𝑃𝑖𝑢𝑝 = 𝑃𝑖𝑛𝑜(1 + 𝛼𝑘𝑑 ) (25) 𝑄𝑖𝑙𝑜 = 𝑄𝑖𝑛𝑜(1 − 𝛼𝑘𝑑 ) (26) 𝑄𝑖𝑢𝑝 = 𝑄𝑖𝑛𝑜(1 + 𝛼𝑘𝑑 ) where 𝑘𝑑=1, 2..n (27) linearization at different 𝑘𝑑 values in equations (24)-(27) results in 𝑘𝑑 discrete load intervals in closed form. for the analysis purpose, the linearization is carried out at three 78 s. s. parihar, n. malik different points which results in three distinct load intervals (d-regions) as shown in fig. 2 and given below 𝐷1 → {𝑃𝑖𝑛𝑜 , 𝑃𝑖𝑛𝑜} point interval for 𝑘𝑑=1 (28) 𝐷2 → {𝑃𝑖𝑛𝑜[1 − 𝛼2], 𝑃𝑖𝑛𝑜[1 + 𝛼2]} for 𝑘𝑑=2 (29) 𝐷3 → {𝑃𝑖𝑛𝑜[1 − 𝛼3], 𝑃𝑖𝑛𝑜[1 + 𝛼3]} for 𝑘𝑑=3 (30) equations (28)-(30) shows that the d1, d2 and d3 are in bound form. therefore, an ia operation has been implemented to introduce these variations in the power flow. 3.3. dg modelling the generator bus has been characterised as a continuous negative pq load for the small size dg resources, implying that they run in constant power mode. according to the ieee 1547 standard [26] the dgs are not meant for regulating the voltage at the buses as they may conflict with the utilities' existing distribution voltage regulating schemes [27]. the total n/w load gets reduced by the power generated by the connected dg. the solar pvdg injects real power at unity power factor. the resultant load at bus i at which solar-pv dg has been placed will be 𝑃𝑟𝑒𝑖 = 𝑃𝑖 − 𝑃𝑠𝑜𝑙𝑎𝑟 𝑃𝑉−𝐷𝐺𝑖 (31) where, 𝑃𝑠𝑜𝑙𝑎𝑟 𝑃𝑉−𝐷𝐺𝑖 represents real power injected by the solar pv-dg at bus i. 4. pso algorithm pso is a stochastic technique in which each particle in a search space alters its state. in a d-dimensional hyperspace, the updated particle velocity and position are expressed as: 𝑣𝑝𝑑 𝑛+1 = 𝑤𝑝𝑣𝑝𝑑 𝑛 + 𝑐1𝑟𝑎𝑛𝑑1(𝑝𝑏𝑒𝑠𝑡𝑝𝑑 − 𝑆𝑝𝑑 𝑛 ) + 𝑐2𝑟𝑎𝑛𝑑2(𝑔𝑏𝑒𝑠𝑡𝑝𝑑 − 𝑆𝑝𝑑 𝑛 ) (32) 𝑆𝑝𝑑 𝑛+1 = 𝑆𝑝𝑑 𝑛 + 𝑣𝑝𝑑 𝑛+1 (33) where, 𝑆𝑝𝑑 𝑛 and 𝑣𝑝𝑑 𝑛 shows the particle’s current position and velocity at nth iteration, respectively. 𝑝 = 1,2, … 𝑁𝑠 where ns represents the swarm size. the acceleration coefficients for the iind and ist particles are c2 and c1, respectively. random numbers in the interval [0,1] are rand1(.) and rand2(. ). pbestpd and gbestpd are particle personal best and the global best position, respectively. the particle p’s inertia weight (𝑤𝑝) is given as 𝑤𝑝 = 𝑤𝑝𝑚𝑎𝑥 − (𝑤𝑝𝑚𝑎𝑥−𝑤𝑝𝑚𝑖𝑛) 𝑛𝑚𝑎𝑥 . 𝑛 (34) where, 𝑤𝑝𝑚𝑖𝑛 and 𝑤𝑝𝑚𝑎𝑥 are the minimum and the maximum inertia weight value, respectively. 𝑛𝑚𝑎𝑥 and n are the maximum and current iteration number, respectively. 5. development of novel vsi and optimal allocation of solar pv-dg a novel vsi is proposed to site dg optimally and is derived by substituting the value of ii from (6) in vi, we get 𝑉𝑖∠𝛿𝑖 = 𝑉𝑖−1∠0 − [(𝑅𝑖 + 𝑗𝑋𝑖 ). ( 𝑃𝑖−𝑗𝑄𝑖 𝑉𝑖∠−𝛿𝑖 )] (35) uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 79 by multiplying (35) with 𝑉𝑖∠ − 𝛿𝑖 on both sides, we obtain 𝑉𝑖 2 = 𝑉𝑖−1𝑉𝑖∠ − 𝛿𝑖 − (𝑅𝑖 + 𝑗𝑋𝑖 )(𝑃𝑖 − 𝑗𝑄𝑖) (36) 𝑉𝑖 2 + [𝑃𝑖𝑅𝑖 + 𝑄𝑖𝑋𝑖 + 𝑗(𝑃𝑖𝑋𝑖 − 𝑄𝑖𝑅𝑖)] = 𝑉𝑖−1𝑉𝑖 cos 𝛿𝑖 − 𝑗𝑉𝑖−1𝑉𝑖 sin 𝛿𝑖 (37) on segregation of real and imaginary part of (37), we obtain 𝑉𝑖 2 + 𝑃𝑖𝑅𝑖 + 𝑄𝑖𝑋𝑖 = 𝑉𝑖−1𝑉𝑖 cos 𝛿𝑖 (38) 𝑃𝑖𝑋𝑖 − 𝑄𝑖𝑅𝑖 = −𝑉𝑖−1𝑉𝑖 sin 𝛿𝑖 (39) substituting 𝑋𝑖 from (39) in (38), we obtain 𝑉𝑖 2 + 𝑃𝑖𝑅𝑖 + 𝑄𝑖 . ( 𝑄𝑖𝑅𝑖−𝑉𝑖−1𝑉𝑖 sin 𝛿𝑖 𝑃𝑖 ) = 𝑉𝑖−1𝑉𝑖 cos 𝛿𝑖 (40) 𝑉𝑖 2 − 𝑄𝑖𝑉𝑖−1𝑉𝑖 sin 𝛿𝑖 𝑃𝑖 − 𝑉𝑖−1𝑉𝑖 cos 𝛿𝑖 + 𝑃𝑖𝑅𝑖 + 𝑅𝑖𝑄𝑖 2 𝑃𝑖 = 0 (41) 𝑉𝑖 2 + (− 𝑄𝑖𝑉𝑖−1 sin 𝛿𝑖−𝑃𝑖𝑉𝑖−1 cos 𝛿𝑖 𝑃𝑖 )𝑉𝑖 + 𝑅(𝑃𝑖 + 𝑅𝑄𝑖 2 𝑃𝑖 ) = 0 (42) for bus voltages to be stable, (42) must have real roots, i.e. discriminant > 0 that resulted in the proposed vsi for the given branch and can be articulated as in (44) ( −𝑄𝑖𝑉𝑖−1 sin 𝛿𝑖−𝑃2𝑉𝑖−1 cos 𝛿𝑖 𝑃𝑖 )2 − 4𝑅𝑖(𝑃𝑖 + 𝑅𝑖𝑄𝑖 2 𝑃𝑖 ) ≤ 0 (43) 4𝑅𝑖.𝑃𝑖 2 (𝑄𝑖𝑉𝑖−1 sin 𝛿𝑖+𝑃𝑖𝑉𝑖−1 cos 𝛿𝑖)2 . (𝑃𝑖 + 𝑄𝑖 2 𝑃𝑖 ) ≤ 1 (44) the bus voltage determined from the pf solution is utilised to calculate vsi for each branch that lies in [0,1] range. any value of proposed vsi nearing 0 shows stable operation, in contrary, vsi value approaching 1 indicates that the bus is gradually leading towards instability. the constraints taken for the analysis: a) power balance: 𝑃𝐺 = 𝑃𝐷 + 𝑃𝑙𝑜𝑠𝑠 (45) 𝑄𝐺 = 𝑄𝐷 + 𝑄𝑙𝑜𝑠𝑠 (46) where 𝑄𝐺 and 𝑃𝐺 shows the reactive and real power generated. 𝑄𝐷 and 𝑃𝐷 stands for reactive and real load demand on the network. b) voltage constraint: 0.95 𝑝. 𝑢 ≤ 𝑉𝑖 ≤ 1.05 𝑝. 𝑢 (47) c) current constraint: 𝐼𝑏𝑟𝑎𝑛𝑐ℎ ≤ 𝐼𝑡ℎ𝑒𝑟𝑚𝑎𝑙 (48) where, 𝐼𝑏𝑟𝑎𝑛𝑐ℎ and 𝐼𝑡ℎ𝑒𝑟𝑚𝑎𝑙 shows the branch current and its thermal limit, respectively. d) dg power generation constraint: 0 ≤ 𝑃𝑠𝑜𝑙𝑎𝑟 𝑃𝑉−𝐷𝐺𝑖 ≤ ∑𝑃𝐿𝑜𝑎𝑑 (49) where ∑𝑃𝐿𝑜𝑎𝑑 is the total real power load in the network. e) substation capacity: 0 ≤ 𝑃𝑔 𝑖 ≤ 𝑃𝑔(𝑚𝑎𝑥) i ∈ slack (50) 80 s. s. parihar, n. malik 0 ≤ 𝑄𝑔 𝑖 ≤ 𝑄𝑔(𝑚𝑎𝑥) (51) where 𝑄g(max) and pg(max) represents the maximum value of reactive and real power generation, respectively. 𝑄𝑔 𝑖 and 𝑃𝑔 𝑖 shows the reactive and real generated power at the slack bus, respectively. the pseudo-code for the optimal integration of solar pv-dg for the deterministic case in the rdn is mentioned below: step i: run the pf program to calculate the bus magnitude and its phase angle, branch current, n/w power losses using direct pf method [28] of rdn for the base case. the following iterative formula is used to determine the solution [𝑉𝑖 𝑛] = [𝑉𝑖 0] + [𝐵𝐶𝐵𝑉][𝐵𝐼𝐵𝐶][𝐼𝑖 𝑛−1] (52) where, bcbv stands for branch current-to-bus voltage and bibc stands for bus incidence-to-branch current matrix. the initial voltage (𝑉𝑖 0) is 1.0 +j 0 p.u. 𝐼𝑖 𝑛−1 is the branch current at n-1 iteration and 𝑉𝑖 𝑛 is the bus voltage at nth iteration at bus i. step ii: determine the cost of annual energy loss [29] using 𝐴𝑛𝑛𝑢𝑎𝑙 𝑐𝑜𝑠𝑡 𝑜𝑓 𝑒𝑛𝑒𝑟𝑔𝑦 𝑙𝑜𝑠𝑠𝑒𝑠 = (∑ 𝑃𝐿𝑜𝑠𝑠 (𝑖 − 1, 𝑖)nb i=2 𝑇. 𝐸 ) $ (53) where nb is the number of buses, t is the annual time duration (8760 hrs) and e is cost of energy (0.06 $/kwh). step iii: evaluate vsi using (44). select bus i as the most sensitive bus to place dg if a branch between bus i-1 and i has the greatest vsi value. step iv: set pso parameters (swarm size, inertia weights, acceleration coefficients) for minimizing real power loss (rpl). step v: set iteration counter (n) to 0. step vi: with random velocities and placements on the dimension as pbest, the values of solar pv-dg size are created (between 0 and ∑ system loads (continuous)). step vii: after installing dg at the location as obtained in step iii, repeat the pf algorithm for each particle. calculate rpl for the randomly initialised particles if all constraints are within limits. otherwise, discard the infeasible solution. step viii: the solar pv-dg size giving minimum rpl value is opted as gbest and its corresponding position is considered as the particle best position. step ix: the particles’ velocity, position and the weight are updated utilizing (32), (33) and (34), respectively. step x: if maximum iterations (nmax) are reached, jump to step xi. otherwise, the counter is incremented and steps iv through x are repeated. if the newly obtained particle position is superior to the prior pbest and gbest, new pbest and gbest will be generated. step xi: the best location denotes optimal solar pv-dg sizes, while the corresponding number denotes the lowest total rpl. step xii: determine annual power loss savings after calculating the cost of energy losses in the presence of dg using (53). uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 81 6. interval-based b/f pf solution methodology the following steps are used to determine the value of the bus voltage and n/w losses: step i: read n/w data. step ii: determine the degree of belongingness 𝛼𝑝𝑙(𝑘𝑑) and 𝛼𝑞𝑙(𝑘𝑑) for n intervals. step iii: complex interval numbers 𝑉𝑖 𝑛 and 𝑉𝑖 0 can be written as 𝑉𝑖 𝑛 = 𝐴1 + 𝑗𝐴2 and 𝑉𝑖 0 = 𝐵1 + 𝑗𝐵2 where 𝐴1, 𝐴2, 𝐵1 and 𝐵2 are all interval numbers. the voltage start for all buses is [1.0,1.0] +j [0.0,0.0] p.u. at first, n/w losses are set to zero. the iteration count and slack bus angle are initialized to zero. step iv: calculate the equivalent real power load at the bus using (31) after optimal siting and sizing of solar pv-dg as explained in step iii and step xi of section 5, respectively. step v: the closed bounded interval of line and load data is determined from (10) through (13) and (24) through (27), respectively for the various degree of belongingness. step vi: for the complex nature of the load, update the bounded interval of real and reactive power load with the use of (14) and (15). step vii: form bibc, bcbv and distribution pf matrices. step viii: determine the currents and voltages at each bus using (7) and (52) using subtraction, addition, division and multiplication operation of the complex interval numbers as described in section 2. step ix: the voltage difference between two successive iteration can be given as 𝑉𝑖 𝑛 − 𝑉𝑖 0 = max[𝑑(𝐴1, 𝐵1), 𝑑(𝐴2, 𝐵2)] (54) where 𝑑(𝐴1, 𝐵1) and 𝑑(𝐴2, 𝐵2) is calculated using (5). if max[𝑑(𝐴1, 𝐵1), 𝑑(𝐴2, 𝐵2)] < 10−4 at all the buses then jump to step x, else jump to step v. step x: use (8) and (9) to calculate n/w power losses. step xi: print the results for specific value of 𝛼𝑝𝑙(𝑘𝑑) and 𝛼𝑞𝑙(𝑘𝑑). step xii: if 𝑘𝑑=n terminate the program otherwise increment k and go to step ii. 7. results and discussion to demonstrate the performance of the ia-based pf technique in the presence of various realistic loads and solar pv-dg, ieee distribution test networks of varying complexity and size are simulated to show its robustness. the complete n/w data for 33 and 69-bus n/w has come from [30] and [31], respectively. for both networks under consideration, the base kv and mva are 12.66 and 100, respectively. the bus feeders of ieee n/w were tested on matlab. a voltage error tolerance of 0.0001 p.u is considered for all the test cases acknowledged in this work. the piecewise segmentation of annual load profile in light, nominal and heavy load level is assumed 50%, 100% and 160% of the rated n/w load [32] with an annual hourly duration of 1000, 6760, and 1000 hours [11], respectively. to confirm the efficacy of the suggested methodology, the simulated network performance is compared to previously published findings for deterministic parameters for the same base voltage and the load model. in table 1, the power flow results at various realistic loads for 33-bus rdn are compared to the published literature. the n/w real and reactive power losses are 5.5% and 5.9% of their respective load for cpl model, whereas, for cl model the real and reactive 82 s. s. parihar, n. malik losses reduces to 4.7% and 5.04%, respectively. the convergence is also faster when compared to that of [25]. table 1 power flow result at various load models for 33-bus rdn proposed method [25] type of load cpl il rl cml cl cpl il rl cml cl total rpl (kw) 202.66 161.28 158.54 153.57 174.21 202.68 161.69 159.33 154.93 174.19 total reactive power loss (kvar) 135.13 107.20 105.31 101.94 115.89 135.23 107.56 105.92 102.94 115.97 number of iterations 4 2 2 2 2 3 4 4 4 3 assuming constant annual load with only one type of load model is a misnomer because the n/w load profile is highly affected by various type of load model and time variations, hence light load, nominal load and heavy load levels are considered. the vmin and network power losses attained for ieee 69-bus n/w at different load levels for cpl and cl model are mentioned in table 2. for 69-bus n/w, the power losses and the convergence characteristics obtained for deterministic case are compared at a nominal load in table 3 to exemplify the capability of the proposed method. from table 2, it is inferred that the reduction in load has a positive effect on n/w bus voltage profile, while increment in load aggravates it, in both cases. for 69-bus rdn, the bus voltage profile attained with cl and cpl model is given in fig. 3. the results demonstrate that the effect of cl model on n/w performance is over-represented as compared to cpl model. as the n/w power loss reduction varies unproportionate to the network load, thus, it is better to provide generalized equations for the n/w power losses using a curve fitting. the generalized power loss equations for cpl and cl model are as follows: for cpl, 𝑃𝑙𝑜𝑠𝑠(𝑘𝑊) = 332.11𝜆2 − 151.68𝜆 + 44.37 (55) 𝑄𝑙𝑜𝑠𝑠(𝑘𝑉𝐴𝑟) = 147.98𝜆2 − 64.88𝜆 + 18.98 (56) for cl, 𝑃𝑙𝑜𝑠𝑠(𝑘𝑊) = 149.22𝜆2 + 20.51𝜆 − 3.71 (57) 𝑄𝑙𝑜𝑠𝑠(𝑘𝑉𝐴𝑟) = 69.28𝜆2 + 9.24𝜆 − 1.73 (58) where, λ represents load level. the general expressions from (55) to (58) are useful for dnos in future power generation planning. table 2 results of 69-bus n/w at various load levels with no solar pv-dg cpl cl load level light nominal heavy light nominal heavy vmin (p.u.) 0.9567 0.9092 0.8446 0.9597 0.9211 0.8757 rpl (kw) 51.56 224.80 651.88 43.85 166.02 411.11 reactive power loss (kvar) 23.54 102.09 294.02 20.21 76.79 190.41 uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 83 table 3 comparative analysis of cl model at nominal load and without dg for 69-bus rdn fig. 3 voltage profile of 69-bus rdn with cpl and cl model validation of novel vsi to authenticate the index, the n/w load (p and q both) is subjected to the random variation between 0 and 160% of the total base load. for 69-bus n/w, branch 60 with 0.0286 value is determined to have the largest vsi value. as a result, the bus 61 is regarded the most vulnerable bus beyond critical loading and is investigated as the load increases. fig. 4 displays the vsi variation at the critical bus at various loading conditions. as vsi displays a linear variation to n/w load increment, it can be utilized for the accurate prediction of the voltage stability in rdn as also concluded in [32]. fig. 4 variation in the value of vsi at various load levels in 69-bus rdn 7.1. analysis of n/w performance with optimal integration of solar pv-dg the proposed methodology has been employed on 69-bus rdn for the optimal integration of solar pv-dg having deterministic parameters. the nmax and swarm size is 130 and 20, respectively. to achieve fast convergence of the optimization technique, the control variables 𝑐1 and 𝑐2 value in (32) and 𝑤𝑝𝑚𝑎𝑥 and 𝑤𝑝𝑚𝑖𝑛 in (34) are chosen as 2, 2, proposed method [25] rpl (kw) 166.02 189.3761 reactive power loss (kvar) 76.79 86.8497 number of iterations 2 3 84 s. s. parihar, n. malik 0.9 and 0.4, respectively [33]. the value of vsi for each branch of 69-bus rdn is shown in fig. 5. bus 61 is found out to have the maximum vsi value and is chosen as the best dg placement location at nominal load level. fig. 5 vsi at each branch in 69-bus rdn the optimal size and site of solar pv-dg is determined at various loading scenarios using the proposed method. the dg size follows a linear relationship with n/w load increment for the 69-bus network, as exemplified in fig. 6. the n/w performance in terms of vmin, power losses, rpl reduction and cost of annual energy losses attained at nominal load level after integrating solar pv-dg for cpl and cl model is illustrated in table 4. table 4 results for solar pv-dg at nominal load level fig. 6 optimal solar pv-dg size at various load levels in 69-bus network base case cpl cl optimal dg location @ solar pv-dg size in kw 61 @ 1888 61 @1888 vmin in pu @ bus (% voltage improvement) 0.9092 @ 65 0.9684 @ 27 (6.5 %) 0.9700 @ 27 (6.7 %) rpl (kw) 224.80 83.17 70.40 rpl reduction (kw) (in %) 141.63 (63.00%) 154.40 (68.68) reactive power loss (kvar) (in %) 102.09 40.51 (60.31%) 34.88 (65.83%) annual cost of energy loss ($) 91178.88 33733.75 28554.24 aels ($) 57445.13 62624.64 mailto:0.9102@65 uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 85 7.1.1. impact of solar pv-dg on n/w power loss the integration of solar pv-dg has a considerable effect on n/w losses. to validate, the general mathematical expressions of ploss and qloss for any load level in the 69-bus n/w are derived utilizing curve fitting approach as depicted below for cpl model, 𝑃𝑙𝑜𝑠𝑠(𝑘𝑊) = 92.40𝜆2 − 12.87𝜆 + 3.64 (59) 𝑄𝑙𝑜𝑠𝑠(𝑘𝑉𝐴𝑟) = 44.68𝜆2 − 5.8𝜆 + 1.64 (60) for cl model, 𝑃𝑙𝑜𝑠𝑠(𝑘𝑊) = 55.15𝜆2 + 20.76𝜆 − 5.51 (61) 𝑄𝑙𝑜𝑠𝑠(𝑘𝑉𝐴𝑟) = 28.21𝜆2 + 9.09𝜆 − 2.42 (62) after comparing n/w power losses without dg [(55) (58)] and with solar pv-dg [(59) – (62)], we can conclude that the integration of renewable dg minimises the n/w losses at all load levels for all types of load models. the relationship between the variation in rpl with solar pv-dg size for 69-bus rdn considering cl model is illustrated in fig. 7, which seems to follow a parabolic curve. the curve shows the rpl value decreases with the increase in the size of solar pv-dg as presented in the left portion of the curve. the optimum dg size will be attained at the lowest point of the curve when rpl reached to its minimum value after which the rpl losses increase as dg size increases (right part of the curve) due to extra current flow from the dg to the adjacent bus. the rpl in 69-bus rdn without integrating solar pv-dg was found to be 224.80 kw and 166.02 kw for cpl and cl model, respectively. after optimal integration of solar pv-dg, the rpl for cpl and cl model in ieee 69-bus n/w mitigates to 83.17 kw and 70.40 kw with a decrease of 63.00% and 68.68% percent, respectively, with respect to the base case (from table 2). the real power demand released is 141.63 kw for the cpl model and 154.40 kw for the cl model after installing spv-dg, respectively. the rpl magnitude at each branch with and without solar pv-dg is demonstrated in fig. 8 for 69-bus n/w with cpl model at nominal load. the results validate that the n/w loss minimizes after integration of solar pv-dg. fig. 7 relationship between rpl and solar pv-dg size at optimal dg bus in 69-bus n/w 86 s. s. parihar, n. malik fig. 8 network rpl with and without renewable dg at nominal load in 69-bus rdn 7.1.2. impact of solar pv-dg on bus voltage profile the vmin for 69-bus n/w has been updated from 0.9092 pu at bus 65 to 0.9684 pu and 0.9700 pu at bus 27 for cpl and cl models, respectively, resulting in 6.5 % and 6.7 % increase in bus voltage magnitude (from table 4). it has been found out that for both the load model the n/w voltage profile is enhanced after solar pv-dg installation satisfying the constraints. fig. 9 impact of n/w load variation on voltage profile in 69-bus n/w for cl model the effect of different load levels on bus voltage profile considering realistic loads is analysed in fig. 9 and found out to have a remarkable enhancement in voltage profile for 69-bus n/w at all the considered load levels after installing solar pv-dg. fig. 9 also shows that all the bus voltages attained from the proposed method are within allowable voltage limits and hence validates the method consistency. thus, the obtained integrated solution is very beneficial for dnos. 7.1.3. impact of solar pv-dg on aels the cost of energy loss in 69-bus rdn before integrating solar pv-dg was $91178.88 which is reduced to $33733.75 and $28554.24 with solar pv-dg resulting in aels of $57445.13 and $62624.64 for cpl and cl model, respectively, at nominal load level with respect to the base case as mention in table 4. the aels for cpl and cl model attained considering all the load levels are $85257.73 and $93577.34, respectively compared to base case. uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 87 7.1.4. comparative analysis to authenticate the efficacy of the method, the test results attained after the penetration of solar pv-dg are compared to other available meta-heuristic methods like woa [34], gwo [35], pso [36], sga [36], csa [36] and bb-bc [37] and mentioned in table 5 for the 69-bus n/w. due to the variable nature of rpl reduction and dg size, it becomes obligatory to compare it on a common platform which is carried out by calculating the ratio of rpl reduction to size of dg. the penetration of solar pv-dg in the n/w yields a ratio of 0.075 superior or comparable to already published literature. the higher value of the ratio compared to the already published results signifies the robustness of the proposed approach used for the optimal integration of dg. to demonstrate its rapid convergence, the computational time required for solar pv allocation at a nominal load for the 69-bus n/w is calculated and compared to the existing literature [38] and [12] (table 6). table 5 comparative analysis of solar pv-dg integration techniques for 69-bus n/w dg allocation method size of dg/ power factor optimum location rpl (kw) % rpl reduction ratio of rpl reduction to solar pv-dg size proposed approach 1888/1 61 83.17 63.00 0.075 woa [34] 1872.82/1 61 83.23 63.01 0.075 gwo [35] 1928.67/1 61 83.24 62.98 0.073 pso [36] 2000/1 61 83.80 62.75 0.070 csa [36] 2000/1 61 83.80 62.74 0.070 sga [36] 2300/1 61 89.40 60.30 0.058 bb-bc [37] 1872.5/1 61 83.22 63.00 nr nr: not reported table 6 execution time for solar allocation at nominal load in 69-bus n/w proposed method analytical method [38] ga [12] cpu time (sec) 0.20 0.70 0.85 7.2. analysis of n/w uncertainties (line and load) with optimal integration of solar pv-dg for the comparative analysis, the load and line uncertainties for the cpl model are set to 5% and 1%, respectively as described in [19] for ieee 33-bus rdn. the interval width for line and load uncertainty at vmin is tabulated and compared with faa [19] in table 7. the results clearly illustrate that the interval width determined from the proposed probabilistic-possibilistic approach is narrower. as a result, the solution is less conservative and superior to the probabilistic technique alone. it can be concluded that increasing n/w load uncertainty creates a bigger voltage drop than increasing n/w line uncertainty. table 7 interval width of vmin for cpl model in 33-bus n/w output variable type of uncertainty interval width (p.u) interval width reduction in % probabilistic-possibilistic approach faa [19] vmin (p.u) line 0.0019 0.0021 9.5 load 0.0094 0.0142 33.8 88 s. s. parihar, n. malik in this case, the analysis of uncertainties in input parameter is presented with solar pvdg for 69-bus n/w. the fixed variation of ±3% in n/w line data has been considered. the solar pv-dg is positioned at bus 61 with dg size of 1888 kw as determined in case 1 from the proposed method. the simulated results for vmin, total real and reactive n/w losses in solar pv-dg integrated ieee 69-bus n/w for the deterministic case and when uncertainties occur in n/w line and load parameter at various degree of belongingness at different load models are tabulated in table 8. at α = 1, the interval widths for cpl, il, rl, cml, and cl are 0.002 pu, 0.0017 pu, 0.0017 pu, 0.0016 pu, and 0.0018 pu, respectively, based on the upper and lower bounds of the vmin. for all practical load models, the interval of voltage magnitude at bus 65 is narrower than that obtained from the cpl load model. as a result, the cl model, as opposed to the cpl model, produces more realistic results. fig. 10 shows the effect of adding uncertainties on the voltage profile of 69-bus n/w for the cl model and three degrees of belongingness (α = 0.2, 0.6, 1). as expected, with deterministic input values, the voltage magnitude at every bus fall within the range of potential n/w states obtained by varying input parameters. table 8 results for ieee 69-bus n/w with load and line uncertainty and dg penetration at nominal load degree of belongingness αpl, αql =1 αpl, αql =0.6 αpl, αql =0.2 load model deterministic result lower upper lower upper lower upper cpl vmin 0.9684 0.9674 0.9694 0.9535 0.9820 0.9425 0.9915 ploss 83.1722 80.5589 85.7935 28.1596 172.5547 6.3011 262.4480 qloss 40.5177 39.2487 41.7903 13.7375 83.9240 3.0769 127.4850 il vmin 0.9709 0.9700 0.9717 0.9586 0.9828 0.9499 0.9916 ploss 60.4966 59.1220 61.8500 23.3002 110.3419 6.0157 153.6309 qloss 30.499 29.7787 31.2103 11.5943 56.3890 2.9513 79.266 rl vmin 0.9710 0.9702 0.9719 0.9590 0.9829 0.9507 0.9916 ploss 65.6427 64.0243 67.2424 24.5247 122.8959 6.0953 173.7163 qloss 32.7774 31.9483 33.5982 12.1344 61.9703 2.9863 88.2260 cml vmin 0.9714 0.9706 0.9722 0.9599 0.9830 0.9519 0.9916 ploss 67.1456 65.4526 68.8209 24.8706 126.6893 6.1169 179.9339 qloss 33.4364 32.5746 34.2904 12.2859 63.6350 2.9957 90.556 cl vmin 0.9700 0.9691 0.9709 0.9569 0.9825 0.9476 0.9916 ploss 70.40 68.5249 72.2729 25.5387 136.0021 6.0119 196.6515 qloss 34.88 33.9405 35.8256 12.5824 67.7841 2.9496 98.4141 uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 89 fig. 10 voltage profile with solar pv-dg with fixed and varying line and load parameter at various degree of belongingness considering cl model and nominal load fig. 11 shows the variation of total reactive and real power losses at different degree of belongingness without and with solar pv-dg for the cl model in ieee 69-bus n/w. it was obvious that when solar pv-dg was integrated into an ieee 69-bus n/w, power losses were dramatically decreased. as can be seen in fig. 11, the interval between power losses reduces as the degree of belongingness increases. fig. 11 variation of total n/w losses at different degree of belongingness with cl model at nominal load level the generalized equations for determining lower and upper real and reactive losses in 69-bus rdn considering the cl model with line and load uncertainty at α=0.6 using curve fitting technique are given as 𝑃𝑙𝑜𝑠𝑠𝑙𝑜 (𝑘𝑊) = 22.02𝜆2 + 5.15𝜆 − 1.3 (63) 𝑄𝑙𝑜𝑠𝑠𝑙𝑜 (𝑘𝑉𝐴𝑟) = 11.05𝜆2 + 2.12𝜆 − 0.577 (64) 𝑃𝑙𝑜𝑠𝑠𝑢𝑝 (𝑘𝑊) = 97.50𝜆2 + 52.05𝜆 − 13.55 (65) 𝑄𝑙𝑜𝑠𝑠𝑢𝑝 (𝑘𝑉𝐴𝑟) = 50.88𝜆2 + 22.86𝜆 − 5.96 (66) the coefficient of variation (cv) in rpl decreases with the penetration of solar pvdg with cl model for 69-bus n/w, and is greatest for the base case, as tabulated in table 9. this implies that the integration of dg decreases the power loss variation in the feeders of the distribution n/w around its mean value and thereby provide better security against overheating of feeders and instability. it is found that the cl model provide better results consistently as specified by their better voltage profile, lowest power losses and minimum 90 s. s. parihar, n. malik cv. the minimum, maximum, mean, standard deviation (std) and cv of power loss lies within their lower and upper limits for all values of α but has been illustrated for α =1 only, in table 9. it has been observed that higher the dg penetration, higher will be the cv value due to its higher degree of uncertainty. table 9 statistical analysis for rpl without and with dg in ieee 69-bus n/w with cpl and cl model and uncertainty at nominal load level load model 𝑃𝑙𝑜𝑠𝑠 (kw) deterministic lower upper without dg cpl min 1.2562e-05 1.2184e-05 1.2940e-05 max 49.6749 47.8832 51.4904 mean 3.3059 3.1890 3.4242 std 8.3880 8.0892 8.6906 cv 2.5373 2.5366 2.5380 with solar pv-dg cpl min 1.2561e-05 1.2183e-05 1.2939e-05 max 15.0325 14.5640 15.5022 mean 1.2231 1.1847 1.2617 std 2.7308 2.6450 2.8169 cv 2.2327 2.2326 2.2328 cl min 1.2468e-05 1.2096e-05 1.2841e-05 max 12.4737 12.1515 12.7931 mean 1.0354 1.0077 1.0628 std 2.2805 2.2205 2.3401 cv 2.2026 2.2018 2.2035 8. conclusions this paper proposes a probabilistic and possibilistic strategy to solve the power flow problem with optimally integrated solar pv-dg to investigate the impact of line and load uncertainties in the rdn. the n/w line and load vary in fixed and as function of gaussian distribution, respectively. a new vsi is proposed to search the optimal site strategically for solar pv-dg to reduce power losses and enhance bus voltages. pso method is further applied to determine the optimum solar pv-dg size. the independent method for finding the optimal site and size of the renewable dg provide openness and flexibility to the method. two test cases have been designed and solved for varying levels of complexity in the pf problem. the bus voltage characteristic for various degree of belongingness is found to be affected by various realistic loads. the solution obtained from the proposed approach comprises all possible states of the n/w and converges faster than the existing results. the robustness of the method has been demonstrated on 33and 69-bus n/w. it has been statistically approved from the analysis that the voltage profile and reduction in n/w power losses are under-represented for cpl model when compared to the cl model for all n/w loading conditions. the results imply that the proposed technique is more feasible and effective for the design of the large-scale n/w with a high degree of uncertainty. the narrower interval width signifies less conservative solution and numerical stability when compared to the faa method. the findings revealed that uncertainties have a major impact on the rdn and so cannot be overlooked. a generalized set of equations for calculating n/w power losses with and without solar pv-dg considering uncertainties has been developed under various loading conditions which will help the dnos in n/w planning and expansion of the rdn. uncertainty assesment in rdn with optimally integrated solar pv-dg considering realistic loads 91 references [1] noorkami et al., "effect of temperature uncertainty on polymer electrolyte fuel cell performance", international journal of hydrogen energy, vol. 39, no. 3, pp. 1439–1448, 2014. [2] z. wang and f.l. alvarado, "interval arithmetic in power flow analysis", ieee transactions on power systems, vol. 7, no. 3, pp. 1341–1349, 1992. [3] m. aiena, m. rashidinejad and m. fotuhi-firuzabad, "on possibilistic and probabilistic uncertainty assessment of power flow problem: a review and a new approach", renewable and sustainable energy reviews, vol. 37, pp. 883–895, 2014. [4] m.m. aman, g.b. jasmon, h. mokhlis and a.h.a. bakar, "optimal placement and sizing of a dg based on a new power stability index and line losses", international journal of electrical power and energy systems, vol. 43, no. 1, pp. 1296–1304, 2012. [5] l. soo-hyoung and p. jung-wook, "selection of optimal location and size of multiple distributed generations by using kalman filter algorithm", ieee transactions on power system, vol. 24, no. 3, pp. 1393–1400, 2009. [6] a.c. rueda-medina, j.f. franco, m.j. rider, a. padilha-feltrin and r. romero, "a mixed integer linear programming approach for optimal type, size and allocation of distributed generation in radial distribution system", electric power system research, vol. 97, pp. 133–143, 2013. [7] s.s. parihar and n. malik, "optimal allocation of multi-type dg in radial distribution system based on new voltage stability index with future load growth", evolving systems, pp. 1–15, 2020. [8] m. mohsen, a.r. youssef, m. ebeed and s. kamel, "optimal planning of renewable distributed generation in distribution systems using grey wolf optimizer gwo", in proceedings of the nineteenth international middle east power systems conference, 2017, pp. 915–921. [9] s.s. parihar and n. malik, "optimal allocation of renewable dgs in a radial distribution system based on new voltage stability index", international transaction on electrical energy system, vol. 30, no. 4, pp. 1– 19, 2020. [10] s.s. parihar and n. malik, "optimal allocation of multiple dgs in rds using pso & its impact on system reliability”, facta universitatis, series: electronics and energetics, vol. 34, no. 2, pp. 219–237, 2021. [11] e.s. ali, s.m. elazim and a.y. abdelaziz, "ant lion optimization algorithm for renewable distributed generations", electrical engineering, vol. 100, no. 1, pp. 100–109, 2018. [12] a.a. hassan, f.h. fahmy, a.e.s.a. nafeh and m.a. abu-elmagd, "genetic single objective optimization for sizing and allocation of renewable dg systems", international journal of sustainable energy, vol. 36, no. 6, pp. 545–562, 2017. [13] b. das, "radial distribution power flow using interval arithmetic", international journal of electrical power and energy systems, vol. 24, no. 10, pp. 827-836, 2002. [14] p.m. vidovic and a.t. saric, "a novel correlated interval-based algorithm for distribution power flow calculation", international journal of electrical power and energy systems, vol. 90, pp. 245–255, 2017. [15] t. ding, r. bo, f. li, q. guo, h. sun, w. gu and g. zhou, "interval power flow analysis using linear relaxation and optimality-based bounds tightening (obbt) methods", ieee transaction on power system, vol. 30, no. 1, pp. 177–188, 2015. [16] a. vaccaro, c.a. canizares and d. villacci, "an affine arithmetic-based methodology for reliable power flow analysis in the presence of data uncertainty", ieee transactions on power systems, vol. 25, no. 2, pp. 624–632, 2010. [17] a. chaturvedi, k. prasad and r. ranjan, "use of interval arithmetic to incorporate the uncertainty of load demand for radial distribution system analysis", ieee transactions on power delivery, vol. 21, no. 2, pp. 1019–1021, 2006. [18] s.s. parihar and n. malik, "probabilistic distribution based interval arithmetic power flow analysis of radial distribution system with distributed generation and composite load model", process integration and optimization for sustainability, pp. 1–13, 2021. [19] b. abdelkader, l. slimani and t. bouktir, "analysis of radial distribution system power flow under uncertainties with fuzzy arithmetic algorithm", in proceedings of the 3rd international conference on information processing and electrical engineering, 2014. [20] m. esmaeili, m. sedighizahed and m. esmaili, "multi-objective optimal reconfiguration and dg (distributed generation) power allocation in distribution networks using big bang-big crunch algorithm considering load uncertainty", energy, vol. 103, pp. 86–99, 2016. [21] m. marin, f. milano and d. defour, "midpoint-radius interval-based method to deal with uncertainty in power flow analysis", electric power systems research, vol. 147, pp. 81–87, 2017. [22] g. alefeld and j. herzeberger, "introduction to interval arithmetic", new york: academic, 1983. https://www.sciencedirect.com/science/journal/03603199/39/3 https://www.sciencedirect.com/science/journal/03603199 http://www.sciencedirect.com/science/journal/01420615 http://www.sciencedirect.com/science/article/pii/s0360544216302146?np=y&npkey=3fbb054e363077c63d4cbe672c6062df7dba39b85a01d2520131e809a62c9ea7 electric%20power%20systems%20research 92 s. s. parihar, n. malik [23] m.e. el-hawary and l.g. dias, "incorporation of load models in load flow studies. form of model effects", iee proceedings cgeneration, transmission and distribution, vol. 134, pp. 27–30, 1987. [24] m.h. haque, "load flow solution of distribution systems with voltage dependent load models", electric power and systems research, vol. 36, pp. 151–156, 1996. [25] k. nagaraju, s. sivanagaraju, t. ramana and p.v. prasad, "a novel load flow method for radial distribution systems for realistic loads", electric power components and systems, vol. 39, no. 2, pp. 128–141, 2011. [26] 1547‐2003‐ieee standard for interconnecting distributed resources with electric power systems, ieee standards, pp. 1–16, 2003. [27] r.a. walling, r. saint, r.c. dugan, j. burke and l.a. kojovic, "summary of distributed resources impact on power delivery systems", ieee transaction on power delivery, vol. 23, no. 3, pp. 1636–1644, 2008. [28] j.h. teng, "a direct approach for distribution system power flow solution", ieee transactions on power delivery, vol. 18, no. 3, pp. 882–887, 2003. [29] v.v.s.n. murty and a. kumar, "optimal placement of dg in radial distribution systems based on new voltage stability index under load growth", international journal of electrical power and energy systems, vol. 69, pp. 246–256, 2015. [30] m.e. baran and f.f. wu, "network reconfiguration in distribution systems for loss reduction and load balancing", ieee transactions on power delivery, vol. 4, no. 2, pp. 1401–1407, 1989. [31] r. ranjan, b. venkatesh and d. das, "voltage stability analysis of radial distribution networks", electric power components and systems, vol. 31, pp. 501–511, 2003. [32] r. ishak, a. mohamed, a.n. abdalla and m.z.c. wanik, "optimal placement and sizing of distributed generators based on a novel mpsi index", international journal of electrical power and energy systems, vol. 60, pp. 389–398, 2014. [33] s. kansal, v. kumar and b. tyagi, "hybrid approach for optimal placement of multiple dgs of multiple types in distribution networks", international journal of electrical power and energy systems, vol. 75, pp. 226-235, 2016. [34] p.d.p. reddy, v.c.v. reddy and t.g. manohar, "optimal renewable resources placement in distribution networks by combined power loss index and whale optimization algorithms", journal of electrical systems and information technology, vol. 5, no. 2, pp.175–191, 2018. [35] a.r. sobieh, m. mandour, e.m. saied and m.m. salama, "optimal number size and location of distributed generation units in radial distribution systems using grey wolf optimizer", international electrical engineering journal, vol. 7, no. 9, pp. 2367–2376, 2017. [36] w.s. tan, m.y. hassan, m.s. majid and h.a. rahman, "allocation and sizing of dg using cuckoo search algorithm", ieee international conference on power and energy, pp. 133-138, 2012. [37] a.y. abdelaziz, y.g hegazy, w. el-khattam and m.m. othman, "a multi-objective optimization for sizing and placement of voltage-controlled distributed generation using supervised big bang–big crunch method", electric power components and systems, vol. 43, no. 1, pp. 105–117, 2015. [38] d.q. hung, n. mithulananthan and r.c. bansal, "analytical strategies for renewable distributed generation integration considering energy loss minimization", applied energy, vol. 105, pp. 75–85, 2013. http://www.sciencedirect.com/science/journal/03787796 http://www.sciencedirect.com/science/journal/03787796 https://www.sciencedirect.com/science/article/pii/s2314717217300259#! https://www.sciencedirect.com/science/article/pii/s2314717217300259#! https://www.sciencedirect.com/science/article/pii/s2314717217300259#! temperature measurement performance of silicon piezoresistive mems pressure sensors for industrial applications facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 123 131 doi: 10.2298/fuee1501123f temperature measurement performance of silicon piezoresistive mems pressure sensors for industrial applications  miloš frantlović 1,2 , ivana jokić 1,2 , žarko lazić 2 , branko vukelić 1,2 , marko obradov 1,2 , dana vasiljević-radović 2 , srđan stanković 1 1 school of electrical engineering, university of belgrade, serbia 2 ictm – center of microelectronic technologies, university of belgrade, serbia abstract. temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. silicon microelectromechanical (mems) piezoresistive pressure sensors are the first and the most successful mems sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. the inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. however, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. in this paper we perform characterization of mems piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °c can be achieved. key words: mems sensor, temperature measurement, sensor correction 1. introduction the most commonly used temperature sensors for contact temperature measurement in industrial processes are those based on seebeck effect (thermocouples), and those based on the temperature dependent resistance of platinum (resistance temperature detectors – rtds). the former do not offer high accuracy (worse than ± 0.5 °c), but have the widest temperature range, while the latter can be of very high performance (better than ± 0.05 °c for standard platinum resistance thermometers – sprts). in a typical industrial plant both temperature and pressure measurements are required at various points of the process, often at remote locations, while monitoring and control functions are centralized. industrial telemetry relies on the use of a special kind of received august 8, 2014; received in revised form december 3, 2014 corresponding author: miloš frantlović school of electrical engineering, university of belgrade, bulevar kralja aleksandra 73, 11000 belgrade, serbia (e-mail: frant@nanosys.ihtm.bg.ac.rs) 124 m. frantlović, i. jokić, ž. lazić, et al. industrial-grade instruments able to transmit their measurement indication in the form of an electrical signal from the measurement site to the control room, and therefore called industrial transmitters. during the past three decades, industrial pressure transmitters evolved from simple electronic devices that perform analog signal processing and generate an analog output signal to much more complex computerized instruments with two-way digital communication. contemporary intelligent pressure transmitters owe their high measurement performance to sensor correction techniques based on digital signal processing. in this paper we investigate the possibility of using silicon piezoresistive mems pressure sensors for temperature measurement, utilizing hardware resources already existing in contemporary intelligent pressure transmitters. some early results of our work were presented in ref. [1], while this paper contains more comprehensive information based on measurement data obtained for a new set of sensors. research of silicon mems piezoresistive pressure sensors, including their design, fabrication and correction techniques, has been performed at the center of microelectronic technologies (cmt) for more than 25 years [2]-[11]. one of the successful types of pressure sensing elements developed and fabricated at cmt is the sp-9, which was chosen for this work. it is intended for measurement of absolute or relative pressure in the range from 0.5 bar to 50 bar. the base material used for its fabrication is a double sided polished single crystal n-type silicon wafer (specific resistivity from 3 cm to 5 cm). four p-type piezoresistors are formed by boron diffusion on the surface of the silicon substrate, constituting a wheatstone bridge. two piezoresistors are in the radial direction and the remaining two in the transversal direction relative to the edges of a micromachined diaphragm. the diaphragm is square, 2×2 mm 2 in size, fabricated by anisotropic etching of silicon on the bottom side of the wafer. the thickness of the diaphragm is from 43 μm to 160 μm, depending on the nominal pressure range of the sensing element. positions of the piezoresistors are optimized for each diaphragm thickness in order to achieve the highest linearity of the output signal. the overall size of the sensing element die is 3.2×3.2×0.38 mm 3 . after the fabrication of the die, it is anodically bonded to a 1.7 mm thick glass support. if a sensing element is intended for relative pressure measurement, there must be a channel through the glass support in order for the fluid at the reference pressure to reach the bottom side of the sensing element diaphragm. a photograph of the sensing element mounted on a to-5 housing is shown in fig. 1a. an industrial-grade pressure sensor consists of a pressure sensing element (e.g. the sp-9) and a metallic sensor body that ensures optimal operating conditions for the sensing element, protects it from damage, and provides for a standardized process connection. a photograph of an industrial pressure sensor based on the sp-9 sensing element is shown in fig. 1b. a separation membrane, located inside the metallic body, eliminates a direct contact between the sensing element and a possibly electrically conductive, chemically aggressive or dirty fluid whose pressure is measured. the sensing element is surrounded by chemically inert silicone oil which is also a good dielectric. temperature measurement performance of silicon piezoresistive mems pressure sensors... 125 fig. 1 photographs of a) sp-9 sensing element mounted on a to-5 housing, b) industrial pressure sensor based on the sp-9 sensing element a simplified electrical circuit diagram of a piezoresistive sensor with current excitation is shown in fig. 2. for a typical sensing element made by cmt, the resistances r1, r2, r3, and r4 are approximately equal in the absence of the applied pressure. their value is within the range from 2 kω to 3 kω, and the temperature coefficient of the resistance is in the range from 0.13 %/°c to 0.15 %/°c. fig. 2 simplified electrical circuit diagram of a piezoresistive pressure sensor with current excitation 126 m. frantlović, i. jokić, ž. lazić, et al. 2. method 2.1. sensor characterization in order to devise a temperature measurement method based on the resistance of the sensor's wheatstone bridge, three gauge pressure sensors based on the sp-9 sensing element are characterized in terms of their temperature response. the mechanical construction of all the sensors is the same, featuring a separation membrane and silicone oil filling. the experimental setup used for the characterization of the sensors was similar to the one described in our previous work [11], except for the relative pressure that was set to zero by leaving the sensors' pressure ports at the normal atmospheric pressure throughout the experiment. acquisition of the signals from the pressure sensors was performed using a custom designed signal acquisition unit connected to a personal computer. a simplified block diagram of the unit is shown in fig. 3. fig. 3 simplified block diagram of the signal acquisition unit the input circuitry connected to the sensor under test consists of a constant current source for sensor excitation (i0=420 μa), two 24-bit delta-sigma analog-to-digital converters (adc), two zero-drift programmable gain instrumentation amplifiers (pga), one zero-drift buffer amplifier and one high-performance resistor (rref=5 kω with ±0.01% tolerance, temperature coefficient of resistance ≤ 2 ppm/°c). the amplifiers are necessary when low level signals are measured and also because of the high impedance of the sensor used as the signal source. measurements are ratiometric, with the adc reference voltage proportional to the sensor excitation current (vref=i0·rref), in order to eliminate the error introduced by variations of the excitation current. the resistance of the sensor, seen at its excitation port, is calculated as rbr=(rref/(a·2 n-1 ))·n, where a is the amplifier gain, n is the resolution of the adc, and n is the numeric value at the adc's output (in this case a=1 and n=24). in this experiment the voltage between the remaining ends of the wheatstone temperature measurement performance of silicon piezoresistive mems pressure sensors... 127 bridge was not measured. for the reference measurement of the pressure sensor's temperature a high performance pt-100 sensor was used. the temperature measurement block shown in the diagram is realized using the same circuitry as the one used for the pressure sensor, thus enabling the inputs of the signal acquisition unit to be interchangeable. the control & data acquisition block is based on a msp430f169 microcontroller. it controls all the unit's functions, including the communication with the pc computer via the rs-232 interface (the comm. interface block). the power supply block contains low-noise voltage regulators. the power consumption of the signal acquisition unit is low, so it is powered by 4 aaa batteries. the temperature of the sensor under test is controlled using a climatic test chamber, in the range from -20 °c to 70 °c. during the sensor characterization experiment the operator sets the temperature value, waits for the sensor temperature to settle and then initiates the measurement. the process is repeated for each temperature value in a sequence. the personal computer receives the measurement data from the signal acquisition unit, displays the measurement indications and saves the data to a file. a diagram showing the experimentally obtained dependences of rbr on the temperature t for the three tested sensors is shown in fig. 4. in order to evaluate the temperature measurement performance of the tested sensors without any sensor correction method applied, a linear calibration function is used. its parameters are calculated by fitting it to the obtained characterization data of each of the sensors, using the least squares method [12]. the temperature measurement error is calculated as the difference between the obtained temperature indication and the temperature value measured using the pt-100 sensor, at all the set temperatures. the results are shown graphically in fig. 5. it can be concluded from the diagram that the temperature measurement error exhibited by the tested sensors is within ± 4 °c. fig. 4 experimentally obtained dependences of the resistance rbr on temperature t for three tested sensors 128 m. frantlović, i. jokić, ž. lazić, et al. fig. 5 temperature measurement error δт as a function of temperature t for three tested sensors, without sensor correction 2.2. sensor correction method in order to improve the measurement performance, a suitable sensor correction method must be applied. in this case a third order polynomial has been chosen for the sensor calibration function. its parameters were determined by fitting it to the sensor characterization data, using the least squares method [12]. a diagram showing the calibration functions obtained in this way for the three tested sensors is given in fig. 6. 3. results & discussion temperature measurement error with the described correction method applied can be estimated by calculations performed using the characterization data obtained in 2.1. such a calculation indicates that the temperature measurement error is within ± 0.3 °c for the three tested sensors. in order to experimentally verify that the performance expected based on calculations can be achieved in real applications, a series of temperature measurements was performed using the same sensors with the described correction method applied. the time interval between the sensor characterization and the new series of measurements was approximately six months. an offset correction was subsequently performed at 20 °c. a diagram showing the temperature measurement error as a function of temperature for the three tested sensors is shown in fig. 7. it can be seen from the diagram that the measurement error exhibited by the tested sensors is indeed within ± 0.3 °c. this result represents a great improvement achieved by using the proposed sensor correction method, since the temperature measurement error is reduced by at least 10 times compared to the results obtained without the correction method applied. temperature measurement performance of silicon piezoresistive mems pressure sensors... 129 fig. 6 calibration functions of three tested sensors the achieved measurement accuracy is better than that of thermocouples and also surpasses a majority of dedicated semiconductor-based temperature sensors. however, typical industrial pressure sensors are neither designed nor optimized for temperature measurement, so there are some disadvantages and limitations that must be considered in practical applications. the temperature range, size and shape, and dynamic behavior of the sensors are the most important limitations, and therefore will be discussed here. the temperature range of a silicon piezoresistive sensing element is predominantly determined by the physical properties of silicon as a semiconductor material. it extends from cryogenic temperatures to 130 °c, whereas platinum resistance thermometers can measure temperatures up to 600 °c, and certain types of thermocouples beyond 1000 °c. there is, however, a multitude of applications where the temperature is below 130 °c, including liquid fuel or water tanks and pipelines, heating, ventilating, and air conditioning (hvac) systems etc. the size and shape of pressure sensors, as well as their mass and other properties, can differ significantly depending on intended applications. in some cases the sensing element can be surrounded by the fluid whose pressure or temperature is measured, with only a minimal mechanical support, whereas in many industrial applications a relatively large metallic body with a protective oil filling is required (as described in the introduction). since the thermal time constant of the sensing element in the air is of the order of 10 s, the time constant of the whole sensor is predominantly determined by other sensor elements, especially the sensor body. furthermore, dynamic properties of all contact temperature measurements inevitably depend on parameters and conditions external to the sensor, which contribute to the overall thermal inertia of the system. many industrial processes involve large amounts of fluids and/or large metallic objects whose heat capacity causes the thermal response time of the system to be much greater than that of a typical industrial pressure sensor. some preliminary results indicate that the thermal time constant of the described industrial pressure sensor is approximately 400 s in still air, which will be further investigated in our future work. 130 m. frantlović, i. jokić, ž. lazić, et al. fig. 7 temperature measurement error δт as a function of temperature т for three tested sensors, with sensor correction 4. conclusion in this paper we presented a method for temperature measurement using mems piezoresistive pressure sensors. three such sensors made by cmt were tested and characterized for temperature measurement. the measurement error, which was within ± 0.3 °c in the observed temperature range (from -20 °c to 70 °c), can be considered as a good result, knowing that many dedicated semiconductor-based temperature sensors, as well as thermocouples, exhibit greater measurement errors. the use of piezoresistive pressure sensors instead of dedicated temperature sensors for temperature measurements has some disadvantages and limitations. being a silicon-based semiconductor device, the pressure sensing element has a very limited temperature range (less than 130 °c) compared to some dedicated temperature sensors such as platinum resistance thermometers, and especially thermocouples. another limitation is the thermal response time of a typical industrial-grade pressure sensor. in spite of these limitations, many applications exist where the described temperature measurement method can be useful. some interesting new applications are possible. for example, in industrial processes with many pressure sensors installed there is often a need for an additional temperature measurement. the presented method enables a simple on-site conversion of a pressure transmitter into a temperature transmitter, as well as sensor validation and various multisensor configurations. in our future work in this research field we intend to improve the sensor measurement performance and to overcome the limitations by using more advanced sensor designs, materials and fabrication techniques. for example, the mentioned temperature range limitation can be overcome by fabricating sensing elements on soi (silicon-on-insulator) substrates [13]. combined pressure and temperature influences as well as dynamic properties of the sensors will be investigated. the development of sensor correction methods will be continued and expanded to other types of mems sensors. temperature measurement performance of silicon piezoresistive mems pressure sensors... 131 acknowledgement: this paper is a result of the research performed within the project tr-32008 funded by the serbian ministry of education, science and technological development. references [1] m. frantlović, i. jokić, ž. lazić, b. vukelić, m. obradov, d. vasiljević-radović, s. stanković, "temperature measurement using silicon piezoresistive mems pressure sensors", in proc. 29th international conference on microelectronics miel 2014, 2014, pp. 159 161 (doi: 10.1109/miel.2014.6842110). [2] z. djurić, j. matović, m. matić, n. mišović (simičić), r. petrović, m. a. smiljanić, and ž. lazić, "pressure sensor with silicon diaphragm", in proc. xiv yugoslav conference on microelectronics miel, beograd, 1986, pp. 88-100. [3] j. matović, z. djurić, n. simičić, m. matić, and r. petrović, "a nonlinear simulation of pressure sensors", in proc. 19th yugoslav conference on microelectronics miel '91, beograd, 1991. [4] d. tanasković, n. simičić, z. djurić, ž. lazić, r. petrović, j. matović, m. popović, and m. matić, "temperature characterics of silicon pressure sensor: the effect of impurity profile variation", in proc. 2nd serbian conference on microelectronics and optoelectronics miopel 93, 1993, pp. 297-302. [5] z. đurić, "rezultati istraživanja i razvoja si senzora i transmitera pritiska u ihtm – centru za mikroelektronske tehnologije i monokristale", in proc. 20th international conference on microelectronics miel, 1995 (serbian). [6] m. m. smiljanić, z. djurić, ž. lazić, m. popović, and k. radulović, "piezootporni senzori pritiska na soi pločicama namenjeni funkcionisanju na visokim temperaturama", in proc. 49th conference for electronics, telecommunications, computers, automation and nuclear engineering etran, budva, 2005,vol. 4, pp. 185-188 (serbian). [7] m. m. smiljanić, ž. lazić, z. djurić, and k. radulović, "dizajn i modelovanje modifikovanog senzora niskih pritisaka sp-6 ihtm-cmtm", in proc. 51st conference for electronics, telecommunications, computers, automation and nuclear engineering etran, herceg novi igalo, 2007, pp. mo3.2-1-4 (serbian). [8] m. m. smiljanić, z. djurić, ž. lazić, and b. popović, "soi piezootporni senzor pritiska za opseg radnih temperatura od 600c do 3000c", in proc. 52nd conference for electronics, telecommunications, computers, automation and nuclear engineering etran, palić, 2008, pp. mo2.6-1-4 (serbian). [9] m. m. smiljanić, v. jović, and ž. lazić, "maskless convex corner compensation technique on a (1 0 0) silicon substrate in a 25 wt% tmah water solution", j. micromech. microeng. 22 115011, 1-11, 2012, doi:10.1088/0960-1317/22/11/115011 [10] m. frantlović, i. jokić, and d. nešić, "a wireless system for liquid level measurement", in proc. 8th international conference on telecommunication in modern satellite, cable and broadcasting services telsiks, 2007, pp. 475-8. [11] m. frantlović, v. jovanov, and b. miljković, "intelligent industrial transmitters of pressure and other process parameters", telfor journal, 2009, vol. 1, no. 2, pp. 65-8. [12] j. wolberg, data analysis using the method of least squares, berlin, heidelberg: springerverlag, 2006. [13] s. s. kumar, b. d. pant, "design principles and considerations for the ‘ideal’ silicon piezoresistive pressure sensor: a focused review", microsyst. technol., vol. 20, pp. 1213– 1247, 2014. 11456 facta universitatis series: electronics and energetics vol. 36, no 3, september 2023, pp. 379-394 https://doi.org/10.2298/fuee2303379m © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper a unified approach for digital realization of fractional order operator in delta domain arindam mondal1, sujay kumar dolai2, prasanta sarkar3 1electrical engineering dept, dr bc roy engineering college, durgapur, india 2electrical engineering dept, dream institute of technology, kolkata, india 3electrical engineering dept, national institute of technical teachers training and research, kolkata, india abstract. the fractional order operator (s,0 <  <1) plays the pivotal role for the realization of fractional orders systems (fos). for the realization of the fos, fractional order operator (foo) needs to be realized either in discrete or continuous time domain. discrete time rational approximation of foo in the z -domain fails to provide meaningful information at fast sampling interval. moreover, z domain rational transfer function becomes highly sensitive with respect to its coefficients variation resulting to the poor finite word length effects for digital realization. in the other hand delta operator parameterized system allows to develop unification of continuous and discrete time formulations leading to the development of a unified framework for digital realization at fast sampling interval. the discrete time approximation of the foo in delta domain is found to be robust to its coefficient variation in comparison to the shift operator based discretization of foo. in this paper, discrete  -operator parameterization is proposed for the digital realization using direct discretization of foo. as a result, superior finite word length effect is observed for the realization of the foo in discrete delta domain. fractional order operator with different orders ( ) are considered for the realization purpose using the proposed method and the results obtained using matlab are presented for validation. key words: delta domain, delta operator parameterization, finite word length effects, fractional order operator (foo), fractional order system (fos) 1. introduction non-integer order controllers (nic) are also known as fractional order controller (foc), have received an increased attention for the last few decades to the researchers particularly in the field of system theory and control [1, 2]. fractional calculus (fc) are received january 10, 2023; revised april 04, 2023 and may 05, 2023; accepted may 06, 2023 corresponding author: arindam mondal electrical engineering dept, dr bc roy engineering college, durgapur, india e-mail: arininstru@gmail.com 380 a. mondal, s. dolai, p.sarkar the backbone of designing fractional order controllers (foc) and focs are showing better response than that of integer order controller [3] for controlling the fractional order plants. for the last few decades fc has proven its applicability in the versatile areas of research such as signal processing [4], chaos electromagnetic fractional poles [5], dielectric polarization [6] etc. improved dynamic properties of the control loops as well as the robustness of the controller are the prime features of foc [7]. fractional order differentiator (fod) or fractional order integrator (foi) are commonly known as fractional order operator (foo), and are symbolized as s , with   , 10 . foo is the fundamental component for the realization of the foc/fos. in order to implement any foc or fos, the irrational infinite dimensional operator ( s ) is to be rationally approximated traditionally, either in continuous time domain ( )tfs − or discrete time domain ( )tfz − . for the digital realization of the foc, the fractional order operator is to be discretized using shift operator parameterization ( )tfz − either by indirect or direct discretization methods. in case of indirect discretization method [7], the foo is first fitted into continuous time rational transfer function ( )tfs − in frequency domain and then discretized using tustin discretization method. but in case of direct discretization, the foo is directly converted to the z -domain rational transfer function ( )tfz − by the use of generating function and its expansion through the continued fraction expansion method (cfe) [8], [9]. some of the popular direct discretization methods in z -domain are described in [10], [11], [12]. as per the shannon’s theorem, for the digital realization of the fos or foc, the continuous time system ( )tfs − should be sampled at a sampling rate of at least 10 times that of the system bandwidth but for the practical implementation of the system, the sampling rate is recommended to be 50 to 70 times of bandwidth [13]. it is the need of the hour to get higher bandwidth in closed loop system for physical implementation like in low budget consumer products [14] and digital controller design for invertors [15]. at a very fast sampling interval (  ), the resultant shift operator parameterized system ( )tfz − fails to provide meaningful information. as the sampling interval ( ) is increasing, the resultant poles of the tfz − come close to each other and found to have been concentrated near (1,0) point making the system highly sensitive to its coefficient variation [16].this will lead to serious finite word length issue for the realization of fos or foc in digital domain. at a very fast sampling interval (  ),when the digital shift operator parametrized system fails to provide meaningful information ,the delta operator [17] parameterized system is devoid of ill conditioning at fast sampling rate ( 0→ ) [18] and it is suitable for the high speed realization with improved finite word length characteristics [19]. therefore, the problems with the shift operator parameterization at very fast sampling interval can be circumvented by the introduction of the  -operator for the system realization in digital domain. nowadays, delta operator is getting attention for the researchers in the field of control and signal processing [20 -32] . in this work, a direct discretization method in delta domain for discretizing the foo is systematically presented and it has been shown that the rational approximation of foo obtained in delta domain is robust to parameter variation and less sensitive to coefficient changes. moreover, at fast sampling rate ( 0→ ), the delta operator parameterized system is producing similar results as can be obtained in continuous time domain. this is the motivation for working with the delta operator parameterized a unified approach for digital realization of fractional order operator in delta domain 381 system and using the superior property of the 𝛿-operator to implement the fractional order operator digitally with the better finite word length effect. in reviewing the literature regarding the direct discretization of foo in delta domain, it can be seen that no research has demonstrated about the coefficient sensitivity and robustness of the parameter variation of the rational transfer function in delta operator parameterized systems obtained through direct discretization method. this study is essential to high speed implementation of the fractional order system/fractional order controller in discrete time domain. this paper deals with the high speed digital design and implementation of foc using delta operator parameterization by direct discretization method. the main scientific contribution of this paper is to prove the superiority of the rational transfer function in delta domain which is obtained by using the direct discretization of the foo in delta domain in terms of stability, robustness with respect to parameter variation and finite word length implementation, particularly at fast sampling interval. the paper is organized as follows: section 2 describes the fundamentals of fractional calculus and fractional order operator. direct discretization of the foo in delta domain is discussed in section 3. section 4 describes the finite word length property of delta operator transfer function. results are analyzed in section 5 and section 6 is devoted for summary and conclusions. 2. fractional order calculus and fractional order operator 2.1. fractional order calculus fractional calculus (fc) is the study of the extension of non-integer order derivative and integrals. in this study a common operator, called as fractional order differ-integral is defined by (1). ( 0) 1 ( 0) ( ) ( 0) a t t a d dt d dt             = =      (1) in this study the following definitions of the fractional order differ-integral is reproduced [2]. definition riemann-liouville [r-l] definition of fractional order differ-integral:    dgt dτ d m tgd t a m m m ta )()( )( 1 )( 1  −−− − = (2) where, nmm − 1 and r is a fractional order of the differ-integral of function g(t). laplace transformation of (2) gives the following equation.     − = )()( )( )]([ '0 sgsgs sgs tgdl t    (3)  − = −−= 1 0 1 0 ' )0()( n k k t k gdssg  is the initial condition and nnn − 1 . 382 a. mondal, s. dolai, p.sarkar 2.2. fractional order operator from the definition mentioned in (2) and its laplace transformation represented by (3), the term s is known as fractional order operator (foo) and if the value of α < 0, it is called as fractional order derivative, the fractional order integral is represented if the value of α > 0. this is why the operator is called as fractional order differ-integral operator. to represent any foc or fos, the laplace transform of the fractional order differential equation is done and the transfer function is a function of sα. 3. direct discretization of fractional order operator in delta domain 3.1. fundamentals of delta operator delta operator is an alternative operator used to describe any discrete time systems and it is represented by  . usually, any discrete time systems are represented using shift operator parameterization and denoted as q .the delta operator is defined by (4)[17].  − = 1q  (4) where,  is the sampling interval. the following identity is obtained in a limiting case, if delta operator is applied on a differentiable signal )(tx at a high sampling rate (→0) ( ) ( ) ( )tx dt dtxtx tx   −+ = → )( lim 0  (5) from (5), it may be observed that at fast sampling rate (→0), delta operator () resembles to the d /dt operator in continuous time domain. one of the most important properties of the delta operator is that at fast sampling interval, the continuous time result and discrete time result can be obtained simultaneously. to establish the relationship between the frequency variables in continuous time domain (s) and discrete delta domain (γ), following intermediate steps are carried out. the relationship between the frequency variable (z) in shift operator parameterization and the frequency variable (γ) in delta operator parameterization is given by  − = 1z  (6) the frequency variable ‘s’ and ‘z’ are related by = sez and therefore (6) can be rewritten as )1ln( 1 1 1 +  =+=  − =    se e s s (7) therefore, the frequency variables in continuous time domain (s) and discrete delta domain (γ) is expressed by (7). a unified approach for digital realization of fractional order operator in delta domain 383 3.2. rational approximation of foo using direct discretization in delta domain fractional order operators need to be discretized to realize and implement the fos. for the implementation in delta domain, it is required to develop the generating function and (7) is used for this purpose. revisiting (7), following relationship is obtained.            +  = )1ln( 1 s (8) in order to expand (8), logarithmic function in the right hand side is to be approximated in closed form. a trapezoidal quadrature rule [33] is utilized to get the close form approximation of )1ln( + as given below: 2 2 66 36 )1ln(    ++ + =+ (9) combining (8) and (9), the fractional order operator in continuous time domain can be approximated in delta domain and expressed by (10).                 ++ + =         ++ +  = 22 2 22 22 66 36 66 361 s (10) a clear observation from (10) can be made that at limiting value of 0→ , s ≌ γ means at fast sampling interval ,the frequency variables in continuous time domain and discrete delta domain maps each other .therefore , (10) can be treated as the direct relationship between variable ‘s‘ and ‘γ’ and right hand side of the (10) is called the generating function. to get the rational approximation of foo (s±α) in delta domain, direct discretization method proposed in [34] is considered in this work. the direct discretization method for discretizing the foo in delta domain as explained in [34] is chosen in this work as the method proved to be superior to the other relevant methods in the literature. the generating function as shown in (10) is expanded using the continued fraction expansion method (cfe)[35]. the cfe formulation is mathematically expressed by (11). .....2 )3( 5 )2( 2 )2( 3 )1( 2 )1( 1 1)1( + − + + + − + + + − + +=+ cd cd cd cd cd dc c d (11) the variable ‘ 'c can be replaced by         ++ + − 22 2 66 36 1   with ‘ d ’ as ‘ ’ to expand the generating function. so, the integer order rational transfer function in delta domain corresponding to the foo can be expressed as               ++ + = 22 2 66 36 )( cfeg (12) 384 a. mondal, s. dolai, p.sarkar in this work, a third order approximation of s is considered through the direct discretization method in delta domain [34] and the coefficients of rational delta transfer function are enumerated in table 1. the method is termed as cfe-2pgilogdel. table 1 coefficients for third-order approximation of s 6 5 4 3 2 3 (3 ) ( 1) (4096 26624 9472 201472 252944 331304 506955)den / / + / + + + +       =  coefficient numerator 0a 6 3 5 2 7 4 3 (30720 454416 36096 838259 78360 4096 192000 506955) + + + den        1a 2 3 5 6 4 3 ( 938460 1388142 723408 608640 76800 12288 12288 ) + + + + den              2a 2 2 2 2 3 2 5 2 2 4 3 ( 465120 195900 128640 15360 714105 57600 ) + + + den            3a 3 2 3 4 3 3( 64320 7680 97950 )+ + + den    coefficient denominator 0b 7 6 5 4 3 2 3 (4096 30720 36096 192000 454416 78360 838259 506955) + + + + + / den        1b 2 3 5 6 4 3 (938460 1388142 723408 608640 76800 12288 12288 ) + + + + + / den              2b 2 2 2 2 3 2 5 2 2 4 3 ( 465120 195900 128640 15360 714105 57600 ) + + + + + / den            3b 3 2 3 4 3 3( 64320 7680 97950 )+ + + / den    therefore, 3rd order rational approximation of delta transfer function corresponding to foo is given by (13). 3 3 2 2 1 10 3 3 2 2 1 10 22 2 3 66 36 )( −−− −−− +++ +++ =         ++ + ==         bbbb aaaa cfegs rd (13) 3rd order approximation of the foo in continuous time domain transfer function, )(3 sg rdc can be obtained using the oustaloup’s approximation method [1]. 4. finite word length characteristics of rational delta transfer function this paper deals with the effects of finite word length (fwl) representation of delta transfer function (gδ (γ, α)) which is approximated using the direct discretization of fractional order operator. a shift operator parameterized transfer function (gq(z, α)) is also derived corresponding to the foo using the trapezoidal rule (tustin) [10] as a generating function and expressed by (14) to compare the effects of fwl representation. a unified approach for digital realization of fractional order operator in delta domain 385 1 1 1 2 1 ( ( )) 1 z w z z    − −  −  − =    +  (14) both the shift and delta operator based rational transfer functions are obtained using the generating function and cfe, the resultant transfer functions are taking the iir filter form. if the range of fractional order (α) lies in the range between 0 and 1 means )1,0( ,all the poles of gδ (γ, α) and gq(z, α) are real and negative [19]. therefore, in iir form realization, both the transfer function takes the following forms. 0 1 1 ( , ) j q z zkk zk g z r r z  = = + −  (15) 0 1 1 ( , ) j kk k g r r       = = + −  (16) where , 0zr , zkr , 0r , kr are the residues and zk , k are the poles. for the digital implementation of the fractional order controller or fractional order system, the corresponding irrational foo is discretized and corresponding rational transfer functions are obtained in both the z -domain and  -domain. once the transfer functions are implemented digitally using finite number of bits or finite word length registers, round off of the coefficients like poles and residues are essential. in other word, the coefficients are to be quantized. in this paper, frequency response analysis is done using both the desired coefficients and quantized coefficients for both discrete domain transfer functions. to study the finite word length characteristics of the delta domain transfer function corresponding to foo, a 16b floating point representation (half precision) is used in this work. this is similar to the ieee 754 32b floating point representation for single precision numbers. half precision representation reduces the requirement of storage and increase the computational speed. in 16b representation format of coefficient quantization, 1 bit is reserved for sign, 6 bits are used to represent the exponent and rest of the 9 bits is used for normalized mantissa. 5. result analysis pentium i7, 2.4 ghz processor with 32.0 gb ram pc is used to perform the experimentation using matlab r2020a version. a ¼ th order differentiator is considered as an example and 3rd order approximation ( )25.0,(3 rdg ) of it has been done using direct discretization in delta domain via cfe2pgilogdel method [34] and is used as the backbone on which the finite word length effects has been studied in this work. though fifth order approximation of the ¼ order differentiator in delta domain provides better frequency response but for the simplicity of operation, 3rd order approximation is considered in this paper. a comparison of frequency response for 3rd order ( )25.0,(3 rdg ) and 5th order approximations ( )25.0,(5 thg ) is graphically presented in fig. 1. frequency response analysis (bode diagram) of the ¼ order differentiator ( )25.0,(sg ) and corresponding rational approximation of it in delta domain ( )25.0,(3 rdg ) are shown in fig. 2a where rational approximations are obtained using three different sampling intervals such as 05.0= sec, 01.0= sec and 001.0= sec. 386 a. mondal, s. dolai, p.sarkar it is clearly visible from fig. 2b (error in approximation) that with faster sampling interval ( 001.0= ), frequency response of the approximate rational transfer function is more closely matching with that of the original continuous time fractional order differentiator over a large range of frequencies. this essence of delta operator property is making method unified when discretization of continuous time systems are done in delta domain. (a) (b) fig. 1 a) frequency responses of )25.0,(sg , )25.0,(3 rdg and )25.0,(5 thg at 001.0= sec; b) errors in approximations a unified approach for digital realization of fractional order operator in delta domain 387 (a) (b) fig. 2 a) frequency response of )25.0,(sg and )25.0,(3 rdg for sampling rates of 05.0= sec, 01.0= sec and 001.0= sec; b) errors in approximations the residues and poles must be quantized since (15) and (16) are implemented using finite word length registers. to validate the results, an example of fractional order operator with degree 4.0= is considered and the 3rd order approximation of the same in both the discrete z domain and  domain when sampled at sampling interval 001.0= sec is analysed. the matlab computation to obtain the desired realization gives the following results. the poles and residues (desired) corresponding to 388 a. mondal, s. dolai, p.sarkar g3rd (z,0,4) provides: 8535.01 −=z , 6869.02 =z , 1334.03 −=z , rz0 = −0.2530, rz1 = −0.1003, rz2 = −0.2467 rz2 = 1. the poles and residues (desired) corresponding to g3rd (, 0.4) provides: 8987.111 = , 2970.12 −= , 1858.03 −= , r0 = −20.8509, r1 = −0.6461, r2 = −0.0707, r3 = 2.9565. a 16b floating point representation is used to get approximated realization representation. the poles and residues (approximated) corresponding to: g3rd (z,0,4) provides: 8535.01 −= az , 6869.02 = az , 13339.03 −= az , rz0a = −0.25299, rz1a = −0.10029, rz2a = −0.2467. the poles and residues (approximated) corresponding to g3rd (, 0.4) provides: 8906.111 −= a , 2969.12 −=  a , 1858.03 −= a , r0a = −20.8438, r1a = −0.6455, r2a = −0.0707, r3a = 2.9531. the frequency response obtained for the discrete time realization (z-domain and γ-domain) using the actual and quantized coefficients is shown in fig. 3. in case of both the discrete time realizations, the absolute errors in magnitude and phase between the desired and approximated realization are shown in fig. 4. from the response as shown in figure 4, it may be noted that the error becomes much more in case of realization of the fractional order operator using shift operator parameterization (z-domain) where as in case of delta operator parameterization (γ-domain), almost zero error occurred using the quantized coefficients using 16 bit representation. (a) a unified approach for digital realization of fractional order operator in delta domain 389 (b) fig. 3 a) frequency response of the realization using z-domain and -domain for  = 0.4 with  = 0.001 sec; b) fréquency responses of g (s,0.4), g3rd (,0.4) and g5rd (,0.4) at  = 0.001 sec fig. 4 absolute errors between actual and approximated realization in z-domain and γ-domain the same method can be used to get the discrete time realization of different fractional order operators. the table 1 enumerates the desired and quantized coefficients for different fractional orders such as 9.0,8.0,7.0,6.0,5.0= . 390 a. mondal, s. dolai, p.sarkar the frequency response analysis using the approximate realization of the discrete z-domain and γ-domain transfer functions for 9.0,8.0,7.0,6.0,5.0= is illustrated in fig. 5 using the quantized coefficients as listed in table 1. table 2 desired and approximated values of coefficients for z-domain and γ-domain transfer functions  transfer function desired residue approximate residue desired poles approximate. poles 0.5 tfz − i..i. + .i.. i. . i. + . 2303210 2303210 4201460 4201460 0008490 + i..i.+ .i. . i. + . i. + . 2303210 2303210 4201460 4201460 0008490 421141 2303210 2303210 42014690 4201460 0008490 . i.. i. + . i. .i. + .i. + . 421141 2303210 2303210 4201460 4201460 0008490 . i. . i. + . i..i.+ .i. + . tf− i.+ .i.+ .i.+ .i. i + . i.+ .000030 000570 000873 11501036 11501036 005062077 i. + .i.+ .i.+ .i. i + . i.+ .000050 000630 000304 11431036 11431036 00866207 7 000230 00005721 000011619 7712717104 7312717104 00436289 i. + .i.+ .i. + .i. . i. + . i.+ . 7 00230 0000571 000011619 7712717104 7312717104 000436289 i.+ .i. + .i. + .i. . i. + . i. + . 0.6 tfz − i. .i. + .i. . i. + . i. + . 22202930 2220290 39001550 300150 0008890 i. .i. + .i. . i. + . i. + . 22202930 22202930 399001550 39001550 000880 736380 2202930 222029930 390015450 390015450 00008890 . i. . i. + . i. .i. + .i. + . 733.380 22202930 223202930 39001550 399001550 00008890 i. . i. + . i. .i. + .i. + . tf− i. + .i. + .i. + .i. . i. + . i. + .0000300 000560 00083 8109581036 8109581036 00050627 i. + .i. + .i. + .i. . i. + . i. + .000005220 000635940 000030754 37110461036 3711041036 000088627 142111 0002580 0007211 00088924 2713439133 23713439133 000076623 . i. + .i. + .i. + .i. . i. + . i.+ . 1421.11 0002390 0007201 000011919 77133174134 7713314134 000043624 i. + .i. + .i. + .i. . i. + . i.+ . 0.7 tfz − i. .i. + .i. . i. + . i. + . 20902700 20902700 3640201680 36201680 0000930 i. .i. + .i. . i. + . i. + . 20902700 20902700 36201600 3642016080 0092330 1024.9 0.200i 0.2721 0.200i + 0.2721 0.362i 0.1680.362i + 0.1680.00i + -0.924 91024 20002710 2002710 364201680 36201680 0000920 . i. . i. + . i. .i. + .i. + . a unified approach for digital realization of fractional order operator in delta domain 391 tf− i. + .i. + .i. + .i. . i. + . i. + .00002870 00052430 0005003 311951036 3119541036 000176277 i. + .i. + .i. + .i. . i + . i. + .00002870 000052430 000050203 37811951036 18561036 000186277 93018 002820 0091 00055434 0315871131 03158131 00762101 . i. + .i. + .i. + .i. . i. + . i. + . 930.18 0028520 0091 005434 0315871131 031587131 00762101 i. + .i. + .i. + .i. . i. + . i. + . 0.8 tfz − i. .i. + .i. . i. + . i. + . 1802390 180290 3101680 310160 0009540 i. .i. + .i. . i. + . i. + . 189802390 189802390 3181016180 3181016180 00009530 42759 18802390 1880290 311016170 3181016170 0009530 . i. . i. + . i. .i. + .i. + . 4.2759 180230 18802390 311016170 31016170 0009530 i. . i. + . i. .i. + .i. + . tf− i. + .i. + .i. + .i. . i. + . i. + .000160 00047360 000153 9118611036 9118611036 000962076 i. + .i. + .i. + .i. . i. + . i. + .0001860 0004760 00017253 91186111036 91186111036 000962076 2736 0003150 0001042 00009053 641139108 641139108 00049615 . i. + .i. + .i. + .i. . i. + . i. + . 27.36 0003150 00010942 00096053 6411339108 6411339108 0004615 i. + .i. + .i. + .i. . i. + . i. + . 0.9 tfz − i. .i. + .i. . i. + . i. + . 159301940 159301940 252501530 252501530 00009780 i. .i. + .i. . i. + . i. + . 159301940 159830190 25501590 252501590 000097830 947428 1592019240 1592019240 2525015390 255015390 000097800 . i. . i. + . i. .i. + .i. + . 94.7428 159201940 159019240 252501590 25501590 0009700 i. . i. + . i. .i. + .i. + . tf− i. + .i. + .i. + .i.. i. + . i. + .0000080 0004260 00082 56118661036 5611866106 0065676 i. + .i. + .i. + .i. . i. + . i. + .00000870 0004260 000872 5611861036 56711866106 0065676 0293 000340 0003432 00071111 0913066109 0913066109 00092628 . i.+ .i. + .i. + .i.. i. + . i. + . 018.93 000340 000342 00071111 0713066109 0913066109 00092628 i. + .i. + .i. + .i. . i. + . i. + . the maximum percentage of relative error in magnitude and phase for realization of different fractional order operators are described in table 2. it can be visualized that the maximum percentage relative error in magnitude is occurring in case of z-domain realization where as in case of γ-domain realization, the response characteristics are very much aligned with that of the continuous time domain results for fractional order differentiator of different orders (α). this paper deals with the unified method for the digital realization of foo in delta domain. the order of the factional order operator is considered from 0.5 to 0.9 to validate the method as compared to the order of foo considered for digital realization in [19]. moreover, the sampling interval is here considered as δ = 0.001 sec which is much less than the sampling considered in [19]. as the sampling interval is reduced much, the notion of using delta operator is justified. 392 a. mondal, s. dolai, p.sarkar with the present approach, the maximum percentage of relative error in magnitude and phase are less as compared to the method adopted in [19].for example, in [19] , the maximum percentage of relative error in magnitude and phase are 13.33 % and 7.83% respectively in delta domain for 𝛼 = 0.7, where as in this work , the maximum percentage of relative error in magnitude and phase are 0.35 % and 4.52% respectively in delta domain for 𝛼 = 0.7. this proves the superiority of this proposed method. fig. 5 frequency response of ),(3 rdg for 9.0,8.0,7.0,6.0,5.0= at 001.0= sec table 3 maximum percentage relative errors in magnitude and phase responses  amplitude max.% relative error )( tfz − amplitude max.% relative error )( tf− phase max.% relative error )( tfz − phase max.% relative error )( tf− 0.5 72.2063 0.1414 8.054600 6.6341 0.6 73.0387 0.2316 52.33260 7.9628 0.7 89.4212 0.3516 132.3962 4.5271 0.8 89.6875 0.4701 133.5642 3.2106 0.9 93.4510 0.4682 145.4541 1.7190 a unified approach for digital realization of fractional order operator in delta domain 393 6. conclusions this paper deals with the digital realization of fractional order operator using delta operator parameterization. whenever any fractional order operator is represented using the corresponding rational approximated transfer function in discrete z -domain, the transfer function approximations become sensitive to coefficient variation resulting in a poor finite word length effect. instead, delta operator parameterized rational transfer function is considerably less sensitive to parameter variation. in this paper a 3rd order approximation of the fractional order operator of different orders are considered and the operators are directly discretized to get the corresponding delta domain transfer functions. through the direct discretization method used in this work for the discretization of the foo in delta domain, the rational transfer function corresponding to the foo becomes stable for fast sampling rate (δ→0) which may not be possible in all case of indirect discretization method at fast sampling interval. the frequency response analysis of the different transfer functions in delta domain using the desired coefficients and approximated coefficients using half precision quantization logic reveals that delta operator parameterized transfer function provides much more robust with respect to coefficient variation. the maximum percentage relative error for magnitude and phase for different fractional order operator are tabulated from fig. 5 and the results as shown in table 2 ensure that rational approximation using delta operator gives very small relative error as compared to the rational approximation using the shift operator parameterization (z-domain). therefore, the digital transfer function rationalized using delta operator is a robust one for finite word length implementation. at fast sampling interval (δ=0.001), the rational approximation using δ-domain resembles to the result obtained using continuous time domain representation making the realization a unified one. references [1] a. oustaloup, la commande crone. commande robuste d’ordre non entièr. paris, france: editions hermès, 1991. [2] i. podlubny, fractional differential equations. san diego, ca: academic press, 1999. [3] y. q. chen, i. petrá and d. xue, “fractional order control a tutorial,” in proceedings of the american control conference, 2009, pp. 1397–1411. [4] j. a. t. machado, "analysis and design of fractional-order digital control systems", syst. anal. model. simul., vol. 27, pp. 107-122, 1997. [5] n. engheta, "fractional calculus and fractional paradigm in electromagnetic theory", in proceedings of the international conference on mathematical methods in electromagnetic theory (mmet 98), 1998, pp. 43-49. [6] h. h. sun, a. a. abdelwahab and b. onaral, "linear approximation of transfer function with a pole of fractional power", ieee trans. autom. control, vol. 29, pp. 441–444, 1984. [7] a. oustaloup, f. levron, b. mathieu and f. m. nanot, "frequency band complex noninteger differentiator: characterization and synthesis", ieee trans. circuits sysemt i: fundam. theory appl., vol. 47, no. 1, pp. 25-39, jan. 2000. [8] b. m. vinagre, i. podlubny, a. hernandez and v. feliu, "some approximations of fractional-order operators used in control theory and applications", j. frac. calc. appl. anal., vol. 3, no. 3, pp. 231-248, 2000. [9] y. q. chen, b. m. vinagre and i. podlubny, "continued fraction expansion approaches to discretizing fractional-order derivatives. an expository review", nonlin. dynam., spec. issue frac. derivatives appl., vol. 38, no. 1-2, pp. 155-170, dec. 2004. [10] y. q. chen and k. l. moore, "discretization schemes for fractional order differentiators and integrators", ieee trans. circuits syst. i: fundam. theory appl., vol. 49, no. 3, pp. 363-367, mar. 2002. 394 a. mondal, s. dolai, p.sarkar [11] m. a. al-alaui, "novel digital integrator and differentiator", electron. lett., vol. 29, no. 4, pp. 376-378, 1993. [12] y. q. chen and b. m. vinagre, "a new iir-type digital fractional-order differentiator", signal process., vol. 83, pp. 2359-2365, 2003. [13] a. khodabakhshian, v. j. gosbell and f. coowar, "discretization of power system transfer functions", ieee trans. power syst., vol. 9, no. 1, pp. 255-261, feb. 1994. [14] h.-m. cheng and t.-c. chiu, "wordlength estimation of digital controller synthesis for inkjet printer mechanism", j. comput., vol. 3, no. 4, pp. 50-57, apr. 2008. [15] m. j. newmann and d. g. holmes, "delta operator digital filters for high performance inverter applications", ieee trans. power electron., vol. 18, no. 1, pp. 447-454, jan. 2003. [16] g. c. goodwin, r. h. middleton and v. poor, "high-speed digital signal processing and control",” proc. ieee, vol. 80, no. 2, pp. 240-259, feb. 1992. [17] r. h. middleton and g. c. goodwin, digital control and estimation. a unified approach. englewood cliffs, nj: prentice-hall, 1990. [18] r. h. middleton and g. c. goodwin, "improved finite word length characteristics in digital control using delta operators", ieee trans. autom. control, vol. ac-31, no. 11, pp. 1015-1021, nov. 1986. [19] g. maione, "high-speed digital realizations of fractional operators in the delta domain", ieee trans. autom. control, vol. 56, no. 3, march 2011. [20] y. zhao and d. zhang, "h∞ fault detection for uncertain delta operator systems with packet dropout and limited communication", in proceedings of the american control conference (acc), 2017, pp. 4772-4777. [21] o. lamrabet, e. h. tissir, and f. e. l. haoussi, " controller design for delta operator time-delay systems subject to actuator saturation", in proceedings of the international conference on intelligent systems and computer vision (iscv 2020), jun. 2020, pp. 1-6. [22] s. k. dolai, a. mondal and p. sarkar, "discretization of fractional order operator in delta domai",.gu j. sci., part a, vol. 9, no. 4, pp. 401-420, 2022. [23] s. ganguli, g. kaur and p. sarkar, "global heuristic methods for reduced-order modelling of fractionalorder systems in the delta domain: a unified approach", ricerche di matematica, aug. 2021. [24] j. gao, s. chai, m. shuai, b. zhang and l. cui, " detecting false data injection attack on cyber-physical system based on delta operator", in proceedings of the 37th chinese control conference (ccc), 2018. pp. 5961–5966. [25] j. p. mishra and x. yu, "delta-operator-based reaching laws for sliding mode control design", ieee trans. circ. syst. ii: express briefs, vol. 69, no. 4, pp. 2136-2140, april 2022. [26] y. xue, j. han, z. tu and x. chen, "stability analysis and design of cooperative control for linear delta operator system", aims mathematics, vol. 8, no. 6, pp.12671-12693, 2023. [27] b. zheng, y. wu, h. li and z. chen, "adaptive sliding mode attitude control of quadrotor uavs based on the delta operator framework", symmetry, vol. 14, no. 3, p. 498, 2022. [28] x. zhang, f. ding, l. xu and e. yang, "highly computationally efficient state filter based on the delta operator", int. j. adapt. control signal process., vol. 6, pp. 875-889, 2019. [29] h. rachid, l. ouarda and t. el houssaine, "stabilization of delta operator systems with actuator saturation via an anti-windup compensator", symmetry, vol. 11, no. 9, p. 1084, 2019. [30] j. leo amalraj, m. maria susai manuel, m. meganathan and m. syed ali, "the generalized fractional proportional delta operator and new generalized transforms in discrete fractional calculus", math. prob. eng., hindawi, vol. 2022, p. 4849312, 2022. [31] a. biswas, a. mondal and p. sarkar," design and implementation of digital controller in delta domain for buck converter", fu elec. energ., vol. 36, no. 1, pp. 103-119, 2023. [32] f. yamin and z. duanjin,"robust fault detection for delta operator switched fuzzy systems with bilateral packet losses", j. syst. eng. electron., vol. 34, no. 1, pp. 214-223, feb. 2023. [33] n. sanjay and k. kumar, "new close form approximations of ln(1 + x)", teach. math., vol. 12, no. 1, pp. 7-14, 2009. [34] s. k. dolai, a. mondal, and p. a. sarkar, "new approach for direct discretization of fractional order operator in delta domain", fu elec. energ., vol. 35, no. 3, pp. 313-331, 2022. [35] y. chen, b. m. vinagre and i. podlubny, "continued fraction expansion approaches to discretizing fractional order derivatives—an expository review", nonlinear dyn., vol. 38, no. 1, pp. 155-170, dec. 2004. 12809 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 581 – 597 https://doi.org/10.2298/fuee2404581s © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper evaluating nbti and hci effects on device reliability for high-performance applications in advanced cmos technologies karan singh1, shruti kalra2, jyoti mahur3 1department of electronics and communication, noida institute of engineering and technology, greater noida, india 2department of electronics and communication engineering, jaypee institute of information technology, noida, india 3department of computer science and engineering, noida international university, greater noida, india orcid ids: karan singh https://orcid.org/0000-0002-1452-7976 shruti kalra https://orcid.org/0000-0002-0609-922x jyoti mahur https://orcid.org/0009-0006-0437-3383 abstract. the integrated circuit (ic) industry faces significant reliability challenges as mosfet devices age, particularly at advanced nodes. key degradation mechanisms include hot-carrier injection (hci), negative-bias temperature instability (nbti), and positive-bias temperature instability (pbti), affecting both pmos and nmos transistors. these aging effects alter critical parameters like drain current and threshold voltage, reducing device lifespan. this paper introduces a comprehensive aging framework for mosfets, accounting for pbti, nbti, and hci with a focus on partial recovery in ac operations at advanced technology node of 22 nm. a machine learning model enhances feature extraction, while the mosra approach accelerates spice simulations to optimize yield and reliability. key words: threshold voltage, mosfet, aging, hci, reliability, temperature 1. introduction the rapid advancement of semiconductor technology has fueled exponential growth in the integrated circuit (ic) industry, paving the way for increasingly powerful, compact, and energyefficient devices. these advancements, however, come with significant challenges, primarily due to the limitations imposed by device aging on reliability, especially at advanced technology nodes like 22 nm and below. device aging is the gradual degradation of a mosfets electrical properties over time, directly impacting its received june 29, 2024; revised september 22, 2024 and november 19, 2024; accepted november 20, 2024 corresponding author: karan singh department of electronics and communication, noida institute of engineering and technology, greater noida, india e-mail: vermakaransingh@gmail.com https://orcid.org/0000-0002-1452-7976 https://orcid.org/0000-0002-0609-922x https://orcid.org/0009-0006-0437-3383 582 k. singh, s. kalra, j. mahur performance and reducing the lifespan of the ic. this issue has become critical as circuit designs push the boundaries of high-performance applications, necessitating comprehensive analysis and modeling of aging mechanisms to ensure long-term reliability [1]. mosfet aging primarily results from three dominant degradation mechanisms: hot carrier injection (hci), negative bias temperature instability (nbti), and positive bias temperature instability (pbti) [2]. these effects alter fundamental parameters, such as threshold voltage (vth) and drain current, leading to a progressive decline in device performance and reliability. hci, for instance, occurs when high-energy carriers (electrons or holes) from the channels drain end are injected into the gate insulator, gradually altering its properties. this phenomenon affects both pmos and nmos transistors and is especially prevalent at higher voltages and smaller node sizes, where electrical fields are intensified. nbti and pbti, in contrast, are primarily concerns in pmos and nmos transistors, respectively, and are closely associated with metal gate and high-k dielectric materials common in advanced cmos technologies. nbti is particularly challenging in pmos transistors, as it leads to a threshold voltage increase when subjected to negative bias at elevated temperatures, a condition typical in many ic applications. pbti, on the other hand, has emerged as a significant reliability issue for nmos devices in high-k metal gate stacks, causing similar degradation under positive bias [3]. these mechanisms introduce substantial challenges in reliability modeling. the degradation they cause is not uniform but varies with stress conditions, biasing schemes, transistor geometry, and environmental factors like temperature. furthermore, both nbti and pbti exhibit partial recovery when the device is in an ac (alternating current) operation, which complicates the modeling of degradation in dynamic environments. neglecting this partial recovery effect can lead to overly pessimistic projections of circuit reliability, as the devices regain some performance when not continuously stressed [4-5]. therefore, a robust reliability framework for high-performance applications must account for these factors to provide accurate predictions. at the advanced 22 nm node, the importance of such a framework is further heightened. smaller node sizes increase the impact of aging effects due to the heightened sensitivity of miniature transistors to electric field stress and material degradation. given the high-stakes applications of these circuits in computing, automotive, and communications sectors, where consistent performance and longevity are critical, accurately modeling these degradation mechanisms becomes essential. however, achieving this is complex, requiring sophisticated approaches that combine physical insights with advanced simulation techniques [6-8]. to address these challenges, this paper presents a comprehensive aging framework that integrates nbti, pbti, and hci effects within the context of advanced cmos technology nodes. by focusing on partial recovery in ac operations, this framework offers a more accurate reflection of real-world conditions, where devices are rarely subjected to constant stress. this approach also recognizes the variability in aging effects based on different operating environments, capturing the nuance needed for accurate reliability modeling in high-performance applications. incorporating machine learning into this framework introduces an additional layer of precision by automating feature extraction processes for degradation modeling [9]. given the complexity of device behavior under varying stress conditions, machine learning techniques can help identify patterns in aging behavior and improve the predictive accuracy of the model. by analyzing large datasets of mosfet characteristics under different biasing, temperature, and geometric conditions, the model can recognize degradation trends and partial recovery behaviors more accurately than evaluating nbti and hci effects on device reliability for high-performance applications... 583 traditional methods. this data-driven approach enhances the models robustness, making it better suited for high-performance applications that demand strict reliability criteria. the integration of machine learning also aligns well with the mosra (mos reliability analysis) methodology, which is increasingly used in reliability analysis at advanced nodes. mosra facilitates accelerated spice simulations, allowing designers to model aging impacts on circuitry more efficiently. spice (simulation program with integrated circuit emphasis) simulations have long been essential for circuit design, providing insight into device behavior under various conditions [10]. however, traditional spice models often struggle to capture the complexities introduced by nbti, pbti, and hci degradation, especially in dynamic environments where partial recovery occurs. mosra overcomes these limitations by providing a structured approach to simulate degradation effects, enabling more accurate prediction of device reliability. this combined framework, which leverages the strengths of machine learning and mosra, not only enhances yield but also ensures ic reliability in demanding high-performance applications. by accurately simulating the effects of nbti, pbti, and hci, the framework enables designers to optimize their circuits to withstand the aging processes that naturally occur over time. this is critical for applications like cloud computing, artificial intelligence, and telecommunications, where even minor lapses in device performance can lead to significant disruptions. through this approach, the ic industry can better predict and mitigate the effects of mosfet aging, ultimately supporting the continued advancement of semiconductor technology. furthermore, this study contributes to the ongoing discourse on aging mechanisms by providing insights into the limitations of existing models [11]. traditional aging models often assume static stress conditions, overlooking the dynamic nature of realworld environments. by incorporating the effect of partial recovery, this work not only challenges existing paradigms but also sets the foundation for more flexible and accurate reliability models. in doing so, it paves the way for a new generation of ic designs that are resilient against the inevitable degradation that comes with mosfet aging [12-13]. 2. literature survey the table 1 presents a detailed literature survey on mosfet aging and reliability models, highlighting critical advancements, methodologies, and limitations in reliability prediction. starting with foundational work, arora and sharma (1991) introduced an empirical substrate current model, which has become a standard for circuit simulation accuracy, although it lacks adaptability to modern, smaller nodes. following this, tudor et al. (2012) contributed an aging model specifically suited to 28 nm technology nodes, an advancement that paved the way for more accurate ic simulation, though it struggles with scalability to smaller nodes. a pivotal study by grasser et al. (2011) shifted the understanding of bias temperature instability (bti) by integrating bti and hot carrier injection (hci) effects. this work enhanced reliability predictions but still requires more extensive experimental validation under diverse temperature conditions. parihar et al. (2017) further improved bti modeling with a specialized tool for nbti degradation analysis, factoring in nitrogen impact and recovery kinetics, though it focuses less on hci effects. in the same year, pan and paul (2017) examined degradation under temperature and voltage cycling, a crucial study for high-performance applications, though limited to lowfrequency scenarios. research by liang et al. (2018) explored the influence of body effects 584 k. singh, s. kalra, j. mahur table 1 literature survey on mosfet aging and reliability models s.no. ref. no. paper title year major work done drawbacks 1 [14] mosfet substrate current model for circuit simulation 1991 proposed an empirical model for substrate current in mosfets, enabling improved circuit simulation accuracy limited accuracy for modern sub-10nm nodes; lacks fine parameter tuning for newer technologies 2 [15] an accurate mosfet aging model for 28 nm integrated circuit simulation 2012 developed a mosfet aging model suitable for ic simulation at 28 nm nodes, accounting for aging effects limited scalability to more advanced technology nodes; increasing complexity for smaller geometries 3 [16] the paradigm shift in understanding the bias temperature instability: from reaction diffusion to switching oxide traps 2011 provided an integrated model for bti and hci effects, focusing on switching oxide traps for improved reliability in nanoscale mosfets lacks extensive experimental validation, particularly across varied temperature conditions 4 [17] bti analysis tool modeling of nbti dc, ac stress and recovery time kinetics, nitrogen impact, and eol estimation 2017 developed a bti analysis tool for modeling nbti with recovery time and end-of-life estimation limited focus on hci effects; recovery parameters not optimized for varied device sizes 5 [18] reliability analysis of mosfets under temperature and voltage cycling stress 2017 analyzed degradation due to temperature and voltage cycling, with an emphasis on high-performance applications limited to low-frequency applications; lacks consideration of geometry scaling 6 [19] influence of body effect on sample-and-hold circuit design using negative capacitance fet 2018 explored the body effect in sample-and-hold circuits with negative capacitance fets, addressing reliability under various conditions body effect model complexity increases with reduced device sizes; limited to specific circuit designs 7 [20] unified cumulative stress model integrating hci and bti for nanoscale mosfets 2020 proposed a cumulative stress model integrating hci and bti degradation mechanisms for reliability predictions conservative model potentially underestimating device lifespan 8 [21] machine learningassisted aging prediction for mosfet reliability 2020 employed machine learning to predict aging under different stress conditions, enhancing accuracy high computational requirements and reliance on large datasets; limited applicability to new architectures 9 [22] efficient machine learning-assisted failure analysis method for circuit-level defect prediction 2024 developed an efficient mlassisted method for predicting circuit-level defects, useful for early aging predictions in mosfets potential for high computational cost and limited data generalizability across technology nodes 10 [23] a comprehensive overview of reliability assessment strategies and testing of power electronics converters 2024 overviewed reliability strategies for power electronics, addressing bti and hci impacts on device aging and converter reliability broad overview with limited focus on specific mosfet failure mechanisms in advanced nodes evaluating nbti and hci effects on device reliability for high-performance applications... 585 in negative capacitance fets, an emerging area of study for enhanced circuit reliability, albeit with increased model complexity. ramezani et al. (2020) developed a unified cumulative stress model that incorporates both hci and bti effects, providing a conservative approach to predict device lifespan, although it may underestimate longevity. chen et al. (2020) applied machine learning to aging prediction, offering improved accuracy but at a high computational cost. more recent studies by ghosh (2024) and hosseinabadi et al. (2024) leverage machine learning and provide comprehensive reliability assessments for mosfets and power electronics, respectively. while these studies offer insights into early defect detection and testing strategies, challenges in data generalization and specific failure mechanisms persist, especially for advanced nodes. 3. device aging and recovery mechanism in mosfets device aging is a critical issue in modern mosfet (metal-oxide-semiconductor field-effect transistor) technology, particularly as transistor sizes shrink to advanced technology nodes. as devices operate over time, they experience degradation in key parameters such as threshold voltage (vth), which leads to reduced circuit performance and reliability. two prominent mechanisms contributing to this degradation are negative bias temperature instability (nbti) and hot carrier injection (hci) [24-25]. these mechanisms are influenced by various operating conditions, including frequency, duty cycle, and stress conditions, which together affect the longevity and stability of mosfets. the figure 1 illustrates the effects of duty cycle and frequency on vth degradation in mosfets, providing insight into how operating conditions accelerate aging. the plot on the left shows vth degradation changes as a function of duty cycle for different operating frequencies (0.1 hz, 1 hz, 10 hz, and 1 khz). as observed, there is a noticeable increase in degradation with higher duty cycles across all frequencies. higher duty cycles mean that the device is subjected to stress for longer periods, exacerbating the degradation. this is particularly evident at low frequencies (e.g., 0.1 hz), where the degradation is more severe compared to higher frequencies. at these low frequencies, the effects of nbti are more pronounced as the device undergoes prolonged periods of stress before any recovery can take place. his results in a significant shift in vth, indicating greater aging. on the other hand, at higher frequencies (e.g., 1 khz), the degradation is comparatively lower, even at high duty cycles. this is due to the partial recovery effect that occurs during the rapid switching cycles. at high frequencies, the stress-recovery cycles alternate more quickly, allowing the device to recover partially between each stress period. this effect mitigates the accumulation of defects in the oxide layer and slows down the overall degradation rate. however, even with partial recovery, there is still an upward trend in vth degradation with increased duty cycle, emphasizing the cumulative impact of prolonged stress over time. the right plot in the figure further highlights the relationship between frequency and vth degradation for two duty cycle values, 50% and 90%. here, we observe a clear trend where degradation decreases as the frequency increases, consistent with the findings from the left plot. at a duty cycle of 90%, the degradation is higher across all frequencies compared to the 50% duty cycle, reflecting the greater exposure to stress. however, as frequency increases, the degradation rate drops, particularly evident for the 50% duty cycle curve. this confirms that higher frequencies facilitate recovery during each cycle, effectively slowing down 586 k. singh, s. kalra, j. mahur the aging process. for high-duty cycle operations, the recovery effect is less effective, and thus, degradation remains at elevated levels even as frequency increases. fig. 1 vth deterioration vs duty cycle and frequency the recovery mechanism is a crucial aspect of mosfet degradation, particularly for phenomena such as bias temperature instability (bti) [26]. when a mosfet undergoes stress due to a constant or alternating gate bias, it experiences degradation in key electrical parameters such as the threshold voltage (vth) and saturation drain current (id,sat). however, when the stress is removed or periodically relieved, partial recovery occurs in these parameters, slowing down the overall rate of degradation. this recovery effect is essential for accurately modeling mosfet aging, as it provides a more realistic depiction of device behavior under actual operating conditions where devices are not continuously stressed. the figure 2 illustrates the recovery effect observed in a mosfet under periodic stress. the top plot shows the percentage degradation in the saturation drain current, (id,sat), over time. the periodic nature of degradation and recovery is evident, with (id,sat) increasing during each stress phase and partially recovering during the unstressed intervals. this pattern of degradation and recovery indicates that the mosfet experiences a reduction in id, sat when subjected to stress, but this reduction does not fully persist when the stress is removed. instead, a partial recovery occurs, reducing the cumulative degradation impact on the device. the bottom plot in the figure shows the gate-to-source voltage, vgs applied to the mosfet as a function of time. the alternating voltage pattern highlights that the device is under stress when vgs is negative, while it undergoes recovery when vgs returns to zero or positive values. during each stress period, carriers are trapped in the oxide layer, leading to degradation in id,sat and other electrical parameters. however, when the stress is relieved, some of these trapped carriers are released, allowing the device to partially recover. this release of trapped carriers restores a portion of the mosfet's initial electrical characteristics, illustrating the cyclical nature of degradation and recovery. mathematically, this recovery phenomenon can be represented by introducing a recovery term in the degradation model. for example, the total degradation in id,sat due to bti can be expressed as [26]: evaluating nbti and hci effects on device reliability for high-performance applications... 587 , , , , , cov(t) ,(t) (t)d sat d sat stress d sat re eryi i i =  − (1) where id, sat, stress (t) represents the degradation due to stress, and id, sat, recovery (t) represents the partial recovery during the unstressed intervals. the recovery term is typically modeled as a time-dependent decay function, capturing the gradual release of trapped charges as follows: , , cov (t) r d sat re eryi b t− =  (2) where b and r are fitting parameters that depend on the device material and structure. the negative exponent r reflects the gradual nature of the recovery process, where a significant portion of the trapped charges are released shortly after the stress is removed, with diminishing recovery over longer periods. the recovery effect is highly dependent on the frequency and duty cycle of the applied vgs waveform. higher frequencies lead to more frequent stress-relief cycles, allowing the device to undergo recovery more often. this frequent recovery helps mitigate the cumulative degradation impact, resulting in a slower overall degradation rate. conversely, a high duty cycle (i.e., longer periods of stress relative to recovery) reduces the effectiveness of recovery, as the device remains under stress for extended periods, leading to greater cumulative degradation. fig. 2 id,sat deterioration during stress and recovery phase 588 k. singh, s. kalra, j. mahur 4. bti and hci models bias temperature instability (bti) and hot carrier injection (hci) are two major degradation mechanisms that significantly impact the reliability and performance of mosfet devices, especially as technology scales down to nanometer nodes. understanding the mathematical models for bti and hci is crucial for accurately predicting device aging and optimizing design for reliability [27]. 4.1. bias temperature instability (bti) model bti is a phenomenon that primarily affects the threshold voltage (vth) of mosfets, leading to a gradual increase in vth over time. bti can be divided into two types: negative bias temperature instability (nbti), which affects pmos transistors under negative gate bias, and positive bias temperature instability (pbti), which affects nmos transistors under positive gate bias. the degradation due to bti is influenced by factors such as gate bias, temperature, and time. the degradation in threshold voltage due to bti, denoted as vth,bti, can be modeled using a powerlaw time dependence as follows [27]: ,bti (t) ( ) ( )n pa th gs th e v a v v exp t kt −  =  −   (3) where: a is a fitting parameter that depends on the material properties and device characteristics. vgs is the gate-to-source voltage. vth is the threshold voltage of the mosfet. n is a parameter that represents the voltage dependency of the bti effect. ea is the activation energy of the bti process. k is the boltzmann constant. t is the temperature in kelvin. t is the stress time. p is the time exponent, typically between 0.2 and 0.3 for bti in advanced technology nodes. this model indicates that vth,bti increases with higher gate voltage, elevated temperature, and longer stress time. the exponential dependence on t reflects the thermally activated nature of the bti mechanism. in practice, bti degradation is not entirely permanent. when the stress is removed (e.g., the device is switched off), a portion of the degradation recovers over time. this recovery effect can be modeled by introducing a recovery term, vth,rec , which decays with time as follows [27]: th, c (t) r rev b t− =  (4) where b and r are fitting parameters. the total bti degradation can then be modeled as a combination of stress-induced degradation and recovery: bti,total ,bti , cth, th th rev v v = − (5) 4.2. hot carrier injection (hci) model hci is another degradation mechanism that affects both nmos and pmos transistors, though it is more pronounced in nmos devices. hci occurs when high-energy carriers (electrons or holes) are injected into the gate oxide from the channel, causing damage to the evaluating nbti and hci effects on device reliability for high-performance applications... 589 oxide interface and leading to shifts in threshold voltage and other device parameters. the threshold voltage degradation due to hci, denoted as vth,hcl, can be modeled as: , (t) ( ) ( ) ( )m q ri th hcl ds th d e v c v v i exp t kt −  =  −   (6) where: c is a fitting constant based on device characteristics. vds is the drain-to-source voltage. id is the drain current, which depends on the channel current and influences the carrier energy in the channel. m and q are empirical parameters that describe the dependency on voltage and current. ei is the activation energy associated with hci. k is the boltzmann constant. t is the temperature in kelvin. r is the time exponent for hci, typically ranging from 0.3 to 0.6. the hci effect increases with higher drain-to-source voltage, as well as higher drain current, since both contribute to generating high-energy carriers capable of causing damage to the oxide interface. similar to bti, hci degradation also has a time dependence, with a power-law relation. while the degradation due to hci is often considered less recoverable than bti, partial recovery can still occur under certain conditions, particularly when the device is operated at lower voltages or temperatures. however, this recovery effect is less significant for hci and is often neglected in long-term reliability modeling. 4.3. combined model for bti and hci degradation in advanced technology nodes, mosfets are subject to both bti and hci degradation mechanisms simultaneously. the total threshold voltage degradation, vth,total, can thus be represented as the sum of bti and hci degradation components: total ,bti,total ,th, th th hclv v v = + (7) where vth,bti, total includes both the stress-induced degradation and recovery term, and vth,hcl represents the degradation due to hot carrier injection. to accurately model the degradation in high-performance applications, it is crucial to capture the dynamic nature of these mechanisms, including the impact of operating conditions such as duty cycle, frequency, and temperature. for instance, higher duty cycles and operating frequencies can lead to faster accumulation of damage due to increased exposure to stress cycles, while elevated temperatures accelerate both bti and hci degradation due to their thermally activated nature. 5. proposed model 5.1. modified lifespan model for mosfet aging the original lifespan model presented in [28] contains three distinct terms that account for the dependencies on drain voltage, substrate current, and drain current. however, in practice, separating these parameters for accurate reliability predictions is challenging. to 590 k. singh, s. kalra, j. mahur address this, we propose an altered model that retains essential bias dependencies while merging two of the original terms. this modified model is represented as: , , thcl1 2 tdce tdidtdii sub i tdvd hnds ds th hcl ds eff ds eff ii i v thcl v t w i w           +                 (8) in this model, the lem terms parameters are represented by tdce and tdii, while tdvd and tdid define the bias dependencies in the elevated current regime. thci2 captures the high current domain, while thci1 corresponds to moderate and low drain current phases (consistent with lem paradigms). hn denotes the stress time exponent for hci. this formulation makes the model suitable for nanoscale technologies by covering a range of operating points, as illustrated in figure 3. the figure illustrates the contributions of two terms in the modified lifespan model for mosfet aging: the first term (dashed blue line) represents the lem (long-term electromigration) component, capturing moderate and low drain current phases, while the second term (green dashed line) reflects the elevated current regimes impact. the combined model (solid red line) integrates both terms, demonstrating a more comprehensive representation of threshold voltage degradation (vth) with increasing gate-to-source voltage (vgs). as vgs increases, the combined model exhibits a higher degradation rate, accurately reflecting the cumulative effect of both moderate and high current stress phases. fig. 3 idsat hci deterioration vs vgs 5.2. enhanced hci model for predicting substrate current in mosfets for an accurate representation of hot carrier injection (hci) effects, a detailed model that incorporates the ionization impact on substrate current is essential. the conventional compact models, such as bsim4, provide a baseline approximation of impact ionization-induced substrate current but lack precision in certain operational regions, particularly within the saturation zone of the mosfet. to address this limitation, a predictive mos reliability analysis (mosra) hci model is introduced, as illustrated in figure 4. this model enhances accuracy in the saturation region by better capturing the behavior of substrate current under hci stress, compared to traditional models. in the figure, the substrate current (isub) is plotted evaluating nbti and hci effects on device reliability for high-performance applications... 591 against the gate voltage (vg), with the mosra hci model and bsim4 model predictions shown alongside experimental data (represented by purple dots). the mosra model (solid lines) demonstrates improved alignment with the experimental data across different voltage levels, particularly in the saturation region, where bsim4 (dashed lines) deviates more significantly. each colored line in the figure corresponds to substrate current predictions at varying hci stress levels, illustrating the mosra model's enhanced sensitivity to these changes. the red curve indicates the highest stress, while the other curves (green, orange) correspond to progressively lower stress levels. this improved accuracy is achieved by incorporating a more detailed treatment of impact ionization effects. in mosfets, impact ionization occurs when high energy carriers in the channel gain sufficient kinetic energy under strong electric fields (as in the saturation region) to generate electron-hole pairs through collisions with the lattice. the holes generated by this ionization process contribute to the substrate current, isub, which serves as an indicator of the extent of hci-induced degradation. the mosra model's equation for substrate current in the presence of hci stress can thus be expressed with a greater degree of accuracy, allowing it to predict degradation effects more precisely. by integrating both hci and ionization effects, the model effectively combines the benefits of compact models like bsim4 with additional precision tailored to advanced technologies. this integration makes the mosra model more applicable for nanoscale devices, where accurate substrate current prediction is critical for ensuring device reliability. fig. 4 isub vs vg of bsim4 model without and with the hci impact ionization 6. estimation of deterioration modeling parameters accurately estimating deterioration parameters for hot carrier injection (hci) and bias temperature instability (bti) is essential for reliable aging modeling in mosfet devices. typically, hci and bti data are collected under accelerated stress conditions with larger bias voltages than conventional circuit operation. this process involves collecting data from multiple identical devices, each tested at different temperatures and bias levels to capture variability in device degradation. particularly in bti characterization, this procedure is timeconsuming, as it requires "on-the-fly" tests to minimize recovery during measurements. full sets of degraded i-v curves are rare, and available measurement data often consist only of threshold voltage shifts (vth), saturation current (idsat), and/or sub-threshold leakage current. estimating degradation across the entire bias range becomes challenging, especially for subthreshold leakage and other low current regions. to address variability, it is crucial to analyze "fresh" data obtained before stress is applied. this initial data accounts for natural variations 592 k. singh, s. kalra, j. mahur across devices, allowing a baseline for comparison. however, measurements taken under lowstress bias and short operational periods can be noisy, with potential errors comparable to actual degradation values, particularly for subthreshold currents. this noise can obscure early degradation signals, complicating accurate parameter estimation. the parameter extraction process involves three main stages, beginning with the recovery-related parameters of the bti model. in the first step, parameters that exclusively affect bti recovery are identified. next, with the bti parameters established, the hci model parameters are extracted. finally, using both bti and hci parameters, the parameters associated with recovery effects are determined. each stage requires refinement of the parameter set to achieve accuracy, accomplished through a systematic optimization loop. as illustrated in figure 5, the process begins with an initial set of parameters. the aging simulation is conducted using hspice, with the simulation conditions matching the stress bias and time intervals in the experimental data. the simulator extracts key device characteristics, such as threshold voltage (vth), saturation current (idsat), and mobility, across various stress conditions. an error function then compares simulated values with measured data to evaluate the accuracy of the current parameter set. in each optimization cycle, the parameter set is iteratively adjusted to minimize the error function. this iterative process continues until the error function reaches an acceptable threshold, indicating a close match between simulated and experimental results. the optimization cycle focuses on specific deterioration factors, such as threshold voltage shift and mobility degradation. initially, parameters related to degradation in the linear region, such as vth and mobility, are tuned. subsequently, saturation characteristics, including saturation velocity and drain-induced barrier lowering (dibl), are adjusted. finally, geometry scaling parameters are refined to account for device size effects. the process is computationally intensive, as it requires consideration of multiple stress biases, temperatures, and time intervals. the early stages of parameter tuning often demand significant computational resources due to the range of conditions being evaluated. however, the systematic optimization loop ensures that all relevant factors are accounted for, enabling precise parameter estimation that reflects real-world operating conditions. fig. 5 mosra parameter optimization evaluating nbti and hci effects on device reliability for high-performance applications... 593 7. aging models in the mosra flow the mosra (mos reliability analysis) flow has been developed to incorporate aging models for bias temperature instability (bti) and hot carrier injection (hci) into hspice and hsim simulators. this flow is built on a unified engine capable of handling both regular non-aging simulations and aging calculations, ensuring efficient data transfer between these two modes. the term end of life (eol), as depicted in figure 6, refers to the point in the mosfet's operational lifespan where a critical performance parameter (such as threshold voltage or saturation current) decreases by a predefined percentage (typically 10%) from its initial value. 7.1. mosra flow overview the mosra flow is divided into two main phases: pre-stress and post-stress. these phases can either be conducted individually or within a single simulation run, depending on the requirements of the analysis. in the pre-stress (or fresh) phase, simulations are run with no prior aging impact, while the post-stress phase includes accumulated aging effects over time. 7.2. pre-stress simulation the pre-stress simulation phase involves running a fresh simulation, where the mosra aging models calculate the voltage stress on user-defined mosfets within the circuit. this stress analysis is based on each device's electrical specifications, as illustrated in fig. 6. during transient analysis, various stress values derived from the synopsys mosra model are applied over different stress periods. after a defined operational time, the results are extrapolated to estimate the overall degradation of each targeted device. during this phase, mosra uses an api (application programming interface) to allow custom-based models to be incorporated if needed. this flexibility supports precise analysis by letting users adjust the model based on specific device characteristics or novel aging effects not captured by default models. the data obtained here serves as a baseline, helping to understand how devices behave under initial, stress-free conditions and identifying the early degradation trend. fig. 6 the mosra flow 594 k. singh, s. kalra, j. mahur 7.3. post-stress simulation in the post-stress simulation phase, the accumulated degradation from bti, hci, and other aging mechanisms is incorporated to simulate the circuit's behavior under long-term stress. different types of analysis transient, dc, or ac can be applied during this phase, depending on the circuit's operational requirements. this phase assesses the circuit-level degradation against specified reliability standards, providing insights into how aging impacts the circuits performance over time. an example of this degradation is illustrated in figure 7, which shows frequency decay over time in a ring oscillator circuit. two scenarios are depicted: one with partial bti recovery (solid line) and another without it (dashed line). partial recovery refers to the device's natural tendency to regain some of its performance when stress is relieved temporarily, as often happens with bti. when partial recovery is ignored, the frequency degradation is overstated, leading to a pessimistic fig. 7 ring oscillator frequency deterioration without (dashed line), and with partial recovery (solid line) fig. 8 the effect of accumulated stress on idsat and on vth evaluating nbti and hci effects on device reliability for high-performance applications... 595 estimation of the circuit's lifespan. thus, accounting for recovery effects is essential for realistic modeling, as it prevents unnecessary conservatism in the reliability analysis. 7.4. optimization and cumulative stress the mosra flow incorporates an optimization loop to refine the accuracy of aging models. parameters are initially set and then iteratively adjusted to minimize the error between simulated results and experimental measurements. for instance, pre-stress simulations may involve adjusting parameters associated with threshold voltage shifts (vth), saturation current (idsat), and mobility in the linear region. following this, saturation region characteristics such as saturation velocity and drain-induced barrier lowering (dibl) are fine-tuned. lastly, geometry scaling adjustments are applied to capture the impact of device dimensions on aging behavior. the cumulative effect of stress is another critical consideration in the mosra flow. as shown in figure 8, the aging models account for the continuous accumulation of stress over different periods, avoiding the need for empirical adjustments. each mosra analysis inherently includes deterioration data from previous phases, creating a holistic approach to aging. ignoring this cumulative effect would lead to an overestimation of degradation, as evidenced by the divergence between actual and predicted values over extended simulation periods. figure 6 highlights how disregarding cumulative stress impacts can significantly overstate deterioration, especially as the simulation period extends. 7.5. benefits of the mosra flow the mosra flows integration of hci and bti models enables a comprehensive approach to mosfet aging analysis in high-performance circuits. by maintaining continuity between pre-stress and post-stress phases, it captures the progressive impact of degradation and offers flexibility to simulate under various stress biases, time intervals, and temperature conditions. additionally, the ability to include partial recovery effects and cumulative stress over time results in more realistic lifespan predictions for nanoscale devices. 8. conclusion the integration of bias temperature instability (bti) and hot carrier injection (hci) models into advanced simulation flows, like mosra, is essential for accurate reliability predictions in high-performance mosfet applications. these models account for complex aging mechanisms, particularly relevant at nanoscale nodes where device degradation impacts both performance and lifespan. by simulating both degradation and partial recovery effects under varied operating conditions, mosra enables more realistic assessments of ic durability. this comprehensive modeling approach, enhanced with machine learning techniques, supports the semiconductor industry's ongoing advancement by providing robust tools for circuit longevity and reliability in dynamic environments. 596 k. singh, s. kalra, j. mahur references [1] h. zhang, x. shi, r. huang, et al., "semiconductor memory roadmap: advances in semiconductor memory", ieee access, vol. 8, pp. 137566–137590, 2020. [2] a. das, x. wang, c. hsieh, et al., "unified aging model of nbti and hci degradation towards lifetime prediction for finfets at advanced technology nodes", ieee trans. electron devices, vol. 70, no. 1, pp. 15–22, 2023. [3] a. crespo, f. sanchez, and d. morente, "impact of hot carrier injection (hci) on the reliability of cmos inverters", ieee trans. device mater. reliab., vol. 21, no. 2, pp. 55–64, 2021. [4] n. goel and s. mahapatra, fundamentals of bias temperature instability in mos transistors: characterization methods, process and materials impact, dc and ac modeling. springer, 2022, pp. 209–263. [5] h. gupta, y. wang, and h. lin, "reliability-conscious mosfet compact modeling with focus on the defect-screening effect of hot-carrier injection", in proceedings of the ieee conference publications, 2022, pp. 131–138. [6] a. das and t. mogami, "an accurate and scalable mosfet aging model for circuit simulation", ieee trans. device mater. reliab., vol. 22, no. 4, pp. 390–396, 2021. [7] fraunhofer iis/eas, "white paper: circuit level aging simulations", fraunhofer institute for integrated circuits, 2023. (available: www.eas.iis.fraunhofer.de). [8] s. reddy and j. liu, "reliability challenges in finfets", springer, 2021, pp. 123-139. (available: www.springerlink.com). [9] s. mahapatra, n. goel, and a. islam, "fundamentals of bias temperature instability in mos transistors: characterization methods, process and materials impact, dc and ac modeling", in fundamentals of bias temperature instability in mos transistors, springer, 2022, pp. 209–263. [10] h. gupta, y. wang, and h. lin, "reliability-conscious mosfet compact modeling with focus on the defect-screening effect of hot-carrier injection", in proceedings of the ieee conference publications, 2022, pp. 131–138. [11] a. das and t. mogami, "an accurate and scalable mosfet aging model for circuit simulation", ieee trans. device mater. reliab., vol. 22, no. 4, pp. 390–396, 2021. [12] l. chen and m. tahoori, "mosra: an efficient and versatile mos aging modeling and reliability analysis solution for 45 nm and below", in proceedings of the ieee conference publications, 2011, pp. 1–5. [13] a. torres-jacome and e. tlelo-cuautle, "on the prediction of the threshold voltage degradation in cmos technology due to bias-temperature instability", electronics, vol. 7, no. 12, pp. 427–435, 2018. [14] n.d. arora and m.s. sharma, "mosfet substrate current model for circuit simulation”, ieee trans. electron devices, vol. 38, no. 6, pp. 1392–1398, 1991. [15] b. tudor, j. wang, z. chen, r. tan, w. liu, f. lee, "an accurate mosfet aging model for 28 nm integrated circuit simulation", microelectronics reliability, vol. 52, no. 8, pp. 1565–1570, 2012. [16] t. grasser, h. reisinger, b. kaczer, w. goes, h. reisinger, t. aichinger, p. hehenberger, p.j. wagner, f. schanovsky, j. franco, m. t. luque, and m. nelhiebel, "the paradigm shift in understanding the bias temperature instability: from reaction-diffusion to switching oxide traps", ieee trans. electron devices, vol. 58, no. 11, pp. 3652–3666, 2011. [17] n. parihar, n. goel, s. mukhopadhyay, and s. mahapatra, "bti analysis tool: modeling of nbti dc, ac stress and recovery time kinetics, nitrogen impact, and eol estimation", ieee trans. electron devices, vol. 65, no. 2, pp. 392–403, 2017. [18] c. pan and s. paul, "reliability analysis of mosfets under temperature and voltage cycling stress", microelectronics reliability, vol. 76, pp. 29–38, 2017. [19] y. liang, x. li, s. george, s. srinivasa, z. zhu, s. k gupta, s. datta, v. narayanan, "influence of body effect on sample-and-hold circuit design using negative capacitance fet", ieee trans. electron devices, vol. 65, no. 9, pp. 3909–3914, 2018. [20] h. ramezani, s. alavi, and m. niakan, "unified cumulative stress model integrating hci and bti for nanoscale mosfets", solid-state electronics, vol. 174, p. 107863, 2020. [21] y. chen, z. li, and j. zhou, "machine learning-assisted aging prediction for mosfet reliability", ieee trans. device mater. reliab., vol. 20, no. 4, pp. 500–508, 2020. [22] j. ghosh, "efficient machine learning-assisted failure analysis method for circuit-level defect prediction”, machine learning with applications, vol. 16, p. 100537, 2024. [23] f. hosseinabadi, s. chakraborty, s.k. bhoi, g. prochart, d. hrvanovic, o. hegazy, "a comprehensive overview of reliability assessment strategies and testing of power electronics converters", ieee open j. power electron., 2024. http://www.eas.iis.fraunhofer.de/ http://www.springerlink.com/ evaluating nbti and hci effects on device reliability for high-performance applications... 597 [24] a. campos-cruz, g. espinosa-flores-verdad, a. torres-jacome, and e. tlelo-cuautle, "on the prediction of the threshold voltage degradation in cmos technology due to bias-temperature instabilityv, electronics, vol. 7, no. 12, p. 427, 2018. [25] b. tudor, j. wang, z. chen, r. tan, w. liu, and f. lee, "an accurate and scalable mosfet aging model for circuit simulation", in proc. 2011 12th int. symp. quality electron. design, pp. 1–4, 2011. [26] m.f. li, s.j. rhee, and c. choi, "dynamic bias-temperature instability in ultrathin sio₂ and hfo₂ mosfets and its impact on device lifetime", jpn. j. appl. phys., vol. 43, pp. 7807–7814, 2004. [27] synopsys, "mos device aging analysis with hspice and customsim”, synopsys technical documentation, 2023. [28] w. wang, s. yang, s. bhardwaj, s. vrudhula, f. liu, and y. cao, "the impact of nbti effect on combinational circuit: modeling, simulation, and analysis", ieee trans. very large scale integr. (vlsi) syst., vol. 18, no. 2, pp. 173–183, 2009. 8214 facta universitatis series: electronics and energetics vol. 35, no 2, june 2022, pp. 243-252 https://doi.org/10.2298/fuee2202243d © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper area and power-efficient reconfigurable digital down converter on fpga debarshi datta1, himadri sekhar dutta2 1electronics & communication engineering department, makaut kolkata, west bengal, india 2electronics & communication engineering department, kalyani government engineering college, nadia, west bengal, india abstract. this paper presents a field-programmable gate array (fpga)-based digital down converter (ddc) that can reduce the bandwidth from about 70 mhz to 182.292 khz. the proposed ddc consists of a polyphase coordinate rotation digital computer (cordic) processor and a multirate filter. the advantage of polyphase cordic processor is to process with high sample rate input data and produces computational efficient noiseless baseband spectrum. the pipeline multirate filter works at a high clock speed. moreover, the multirate filter generates a fractional sample rate factor using a cubic b-spline farrow filter. the proposed ddc is coded with optimal hardware description language (hdl) and tested on kintex-7 xilinx fpga as the target device. experimental results indicate that the proposed design saves chip area, power consumption and operates at high speed without loss of any functionality. additionally, the proposed design offers sufficient spurious-free dynamic range (sfdr) and produces less than 1 hz frequency resolution at the output. key words: digital down converter (ddc), coordinate rotation digital computer (cordic), half-band (hb) filter, field programmable gate array (fpga), matlab 1. introduction the demand for a high-performance digital down converter (ddc) is very much essential in modern communication [1]. the sample rate reduction process plays an important role in data communication systems for its various data rates. hence, fieldprogrammable gate array (fpga)-based ddc architecture is very much essential due to its outstanding flexible architecture as compared to application-specific integrated circuits (asic) [2]. furthermore, the implementation of ddc on fpga performs superbly in frequency response and phase characteristics with a high precision output. received september 3, 2021; received in revised form december 23, 2021 corresponding author: debarshi datta electronics & communication engineering department, makaut kolkata, west bengal, india e-mail: debarshidatta7@gmail.com 244 d. datta, h. s. dutta in the last decade, several researchers have reported hardware-efficient different ddc architectures on fpga devices. recently, the authors in l. l. motta et al. [3] have proposed a digital up-down converter using polyphase cascaded integrated comb (cic) filters. the simulation results show the functional verification of the filters, and the design has achieved a high performance using fixed-point filter coefficients. again, l. guo et al. [4] have suggested parallel ddc architecture using numerical control oscillator (nco). the nco was decomposed into several sinusoidal sequences. these sequences are multiplied by the input signals to produce complex waveforms. the design was verified by matlab and tested on the fpga board. similarly, the authors in x. liu et al. [5] proposed a reconfigurable ddc architecture that performed a down-converted signal about 3.6 ghz to the output range of 1 ks/s-225 ms/s. the design was implemented on the xilinx kintex7 device and measured the synthesized results in terms of resources and power consumption. furthermore, the authors in b. tietche et al. [6] described fpga-based resampling circuits for software-defined radio applications. the implementation schemes controlled the spurious-free dynamic range (sfdr). again, the authors in v. obradović et al. [7] discussed a flexible ddc architecture for wideband direction finder. the ddc was tested on xilinx kintex-7 using xilinx ip cores to implement the filters chain. similarly, authors in j. thabet et al. [8] presented a reconfigurable ddc design implemented on virtex-7 fpga board to obtain high speed, low power consumption. the design reduced the complexity for applicability in multi-standard gnss receivers. furthermore, the authors in a. agarwal et al. [9] suggested coordinate rotation digital computer (cordic)-based ddc on xilinx virtex-6 fpga for multi-standard radio communications and achieved a maximum operating speed of 240 mhz. however, all the existing designs have some drawbacks in hardware implementation. they consume a large area and power in the fpga platform. thereby a cost-efficient reconfigurable ddc architecture is very much attractive in a communication system. therefore, hardware efficient flexible ddc architecture is required that can meet all the practical applications. the proposed design uses a polyphase and pipelined architecture to improve the operating speed. again, the truncation process in each unit reduces the area requirements. finally, the proposed design is tested on the xilinx kintex-7 fpga board. the implementation results indicate that the proposed ddc optimizes the hardware resources and power as compared to existing architectures without losing any significant information. the organization of this paper is as follows: section 2 describes the proposed architecture and its components. results are discussed in section 3. section 4 concludes the paper. 2. proposed architecture the proposed ddc consists of a polyphase cordic processor and multirate filter, as shown in fig. 1. the polyphase cordic processor works a high data rate input signal which is beyond 1 ghz. the multirate filter such as multi-stage cic, half-band (hb), and cubic b-spline farrow filters are connected in cascade to achieve a high decimation factor and to the produce correct baseband spectrum. area and power-efficient reconfigurable digital down converter on fpga 245 fig. 1 proposed ddc architecture the total sample rate (r) factor is calculated as r = fout / fs = r1 x r2 x 2 x r3 (1) where fs and fout is the input and output sampling rate, respectively. r1 is the decimation factor of the polyphase cordic processor, r2 is the decimation factor of the multi-stage cic filter, r3 is the decimation factor of the cubic b-spline farrow filter. the sample rate factors can be changed dynamically in real-time to match any practical application. hence, the design offers maximum flexibility. the frequency resolution at the output is fs/232 (= 0.8381hz for fs = 3.6 ghz). the following sub-modules describe each component of the proposed design. 2.1. polyphase cordic processor the polyphase cordic processor can satisfactorily work with a high sample rate signal which is the output from an analog-to-digital (adc) converter (typically, adc12d1800). the proposed polyphase cordic processor is shown in fig. 2. the polyphase component operates at a speed of fs/r1, resulting in the polyphase cordic processor being more feasible in the fpga platform [10]. to achieve correct output, the relation between fs and r1 is expressed as r1 ≤ fs/w (2) where w is bandwidth of the input signal. fig. 2 polyphase cordic processor from the polyphase algorithm, the signal gi(n) can be represented as gi(n) = x(nr1 + i) (3) where i = 0, 1, ………… (r1-1), and x(n) is the input sequence. 246 d. datta, h. s. dutta hence, the in-phase (yi(n)) and quadrature (yq(n)) parts of the polyphase cordic processor are expressed as [11] yi(n) = ∑ [gi(n)ici(n)] r1−1 i=0 = ∑ [xi(nr1 + i) cos [2π(nr1 + i)f0/fs] r1−1 i=0 (4) and yq(n) = ∑ [xi(n)qci(n)] r1−1 i=0 (5) = ∑ [xi(nr1 + i) sin [2π(nr1 + i)f0/fs] r1−1 i=0 respectively where fo is the central frequency. to eliminate unwanted frequency components and further reduce the sample rate to ensure a correct output signal, both yi(n) and yq(n) signals are passed through multirate decimation filters. 2.2. cic filter the cic filter performs low-pass filtering to remove the multiple copies of images and produces a very narrow passband for the ddc system [12]. cic is a high efficient decimation filter that is placed just after the polyphase cordic processor. a multi-stage cic filter is typically used to reduce the sidelobe producing maximum main lobe gain [13]. this work allows a pipeline 4-stage cic decimation filter, shown in fig. 3. the additional register in the integrator and comb section reduces critical path delay. fig. 3 4-stage truncated pipeline-based cic filter the filter gain is calculated as [14] g = (𝑅2𝐷)𝑁 = 65536 (for 𝑅2 = 8, stage n = 4, and comb delay d = 2) = 48.16 db (6) area and power-efficient reconfigurable digital down converter on fpga 247 the full resolution data width at the output stage is 𝐵𝑜𝑢𝑡 = [𝐵𝑖𝑛 + n𝑙𝑜𝑔2(𝑅2𝐷)] = 36 bits [𝐵𝑖𝑛 = 20] (7) fig. 4 depicts the magnitude response of the cic filter. fig. 4 magnitude response of the cic filter for r2 = 8, d = 2, n = 4 generally, integrator works at a high sample rate with a large data width. hence, the truncation process is necessary to reduce the word length without losing desired information. it is noted that the five least significant bits (lsbs) are truncated from the first integrator's 36-bit. hence, the second integrator works only 31-bit. using the same procedure, the third and fourth integrators are work only with 26-bit and 21-bit, respectively. as a consequence, the truncation process reduces the output data width to 16-bit. usually, the matlab tool provides the data length in each stage. the passband frequency (𝜔𝑝) is π n⁄ 𝑅2. 2.3. hb filter it is important to note that the cic filter does not provide a flat response and its nonflatness must be compensated in other processing stages. after the cic filter, the hb filter is used to attain the correct passband droop [15]. the hb filter has symmetric property at cut-off frequency π/2. fig. 5 shows a 31-tap symmetric hb filter with decimation factor 2. fig. 5 31-tap transpose symmetric hb filter 248 d. datta, h. s. dutta the pass-band frequency (ωp) is 0.45π, and stop-band frequency (ωs) is 0.55π. the transpose symmetric hb architecture reduces the multiplication units [16]. hence, the computational workload reduces significantly. for this work, the hb filter coefficients are 16-bit fixed points and generated using the “firhalfband” matlab function [17]. 2.4. cubic b-spline farrow structure finally, a cubic b-spline farrow structure is used to produce the fractional sampling output with 3/2 times the input signal. this type of implementation provides a better reconstruction of the signal as compared with conventional lagrange interpolation [18], [19]. the calculation of the cubic b-spline farrow structure is described below. the nth degree b-spline at time domain is expressed as [14] βn(t) = 1 𝑁! ∑ (−1)𝑘𝑁+1 𝑘=0 ( 𝑁 + 1 𝑘 ) (𝑡 − 𝑘 + n + 1 2 )𝑁 (8) where βn represents as n-th b-spline. consider, n = 3, or cubic spline type, then the polynomial becomes β3(t) = 1 6 ∑ (−1)𝑘4 𝑘=0 ( 4 𝑘 ) (𝑡 − 𝑘 + 2)3 (9) = 1 6 (t + 2)3 2 3 (t + 1)3 + t3 2 3 (t − 1)3 + 1 6 (t − 2)3 (10) the reconstruction spline is the summation of weighted b-spline sequences and expressed as y(t) = ∑ 𝑥(𝑘)𝛽3(𝑡 − 𝑘)𝑘 (11) consider, the samples are taken at time t = -1, 0, 1, 2, and from eq. (11), the four parts b-splines are calculated as y(d) = x(n + 2) β3 (d 2) + x(n + 1) β3 (d 1) + x(n) β3 (d) + x(n – 1) β3 (d + 1) = x(n + 2) 𝑑3 6 + x(n + 1) [ 1 6 (d + 1)3 2 3 d3 ] + x(n) [ d3 2 3 (d + 1)3 + 1 6 (d + 2)3] + x(n 1) [ 1 6 (d 1)3] = x(n + 2) 𝑑3 6 + x(n + 1) [𝑑3 2 + 𝑑2 2 + 𝑑 2 + 1 6 ] + x(n) [ 𝑑3 2 – d2 + 2 3 ] + x(n 1) [𝑑3 2 + 𝑑2 2 𝑑 2 + 1 6 ] (12) for realizing the above equations in farrow structure, the factors of fractional delay dk are generated by the following four equations: d0 : 0 + x(n + 1)/6 + 2x(n)/3 + x(n 1)/6 = c0 d1 : 0 + x(n + 1)/2 + 0 x(n 1)/2 = c1 d2 : 0 + x(n + 1)/2 x(n) + x(n 1)/2 = c2 d3 : x(n + 2)/6 x(n + 1)/2 + x(n)/2 x(n 1)/6 = c3 (13) where c0, c1, c2, and c3 are represented as spline matrix coefficients and d lies between 1 and 0. the above coefficients in eq. (13) are transformed into z-domain to realize the transfer functions of the farrow filter architecture, as shown in fig. 6. farrow filters are the most suitable architecture for fractional sample rate converter due to its one programmable fractional delay component without changing filter coefficients [19]. area and power-efficient reconfigurable digital down converter on fpga 249 fig. 6 cubic b-spline farrow structure [20] 3. result analysis the following sub-sections describe the result analysis in detail. 3.1. design specifications the proposed system performs for mobile communication specifications. all floating-point data are converted to fix-point data to achieve stopband specifications. the specifications of the proposed ddc are summarized as follows: i. input signal bandwidth: 70 mhz. ii. output signal bandwidth: 182.292 khz iii. decimation factor: 384 (r1=4, r2=25, hb =2, r3=3/2) iv. input data width: 16-bit v. output data width: 20-bit vi. passband ripple ≤ 0.1 db vii. stopband attenuation ≥ 80 db 3.2. data truncation the truncation is applied in each signal path to protect overflow error. each polyphase branch can be represented as an fir filter. the multiplication-accumulation is described as follows. an m-bit binary word signifies in signed 2’s complement fixed-point rational format and can take value from subset s as [21] s = {s/2y 1| 2m-1 ≤ s ≤ 2m-1 -1, s∈ z} (14) which is represented as p (x1, y1), where x1 = m 𝑦1 – 1 and y1 fractional bits. using fixed-point arithmetic, the multiplication is calculated as p (x1, y1) x p (x2, y2) = p (x2+ x2+ 1, y1+ y2) or p (x3, y3) (15) consider, the multiplication and accumulation are denoted by p (x3, y3) and p (x4, y4), respectively, so that p (x4, y4) = a (x3 + floor [log2(r-1)], y3) [where r = r1 + 1] (16) for example, the input data is p (8, 7), and the coefficient data is a (3, 12). hence, the multiplication and accumulation data are p (12, 19) and p (14, 19) respectively [for r1 = 4]. according to the word length reduction, the output data is p (14, 19–14) or a (14, 5) or data word length (14 + 5 + 1) 20-bit which are the input of the cic filter. the output word lengths of the cic filter are 16-bit [described in section 2.3]. again, the farrow fir output word length is 20-bit. 250 d. datta, h. s. dutta 3.3. fpga implementation the proposed ddc design is simulated in xilinx vivado 2017.4 tool and implemented on kintex-7 xc7k70t-fbg676 with 16-bit input precision to meet the desired specifications. the design is coded using verilog hardware description language (hdl). additionally, the code optimization technique reduces the logical resources and power [22], [23]. the compilation report contains slices, luts, iob blocks, maximum frequency, and power consumption. table 1 indicates the synthesized list of each component of the proposed design. table 1 resource utilization of each component of the proposed ddc architecture synthesis parameters polyphaser cordic processor cic filter (r2 = 25) hb filter (31-tap) (2) cubic b-spline farrow filter (r3 = 3/2) r1=4 r1=8 r1=16 slice registers 1758 3650 8521 1290 1948 3182 6-input luts 832 1975 3932 556 878 2185 iobs 62 62 62 65 80 86 brams 2 4 8 0 0 8 dsp48es 4 8 16 0 0 36 3.4. validation for the purpose of verification, chipscope outputs are sent back in the matlab r2015a tool. fig. 7 shows sfdr of 88 db, which can be generated using 1024 samples with unity signal amplitude. fig. 7 power spectrum of proposed ddc 3.5. comparison table 2 shows a comparison report of the proposed ddc design with the existing designs. the proposed design uses data truncation to reduce the resources. this area reduction leads to power optimization. moreover, the pipeline version of this proposed area and power-efficient reconfigurable digital down converter on fpga 251 architecture enhances the operating speed. the area and power are reduced by 39.65% and 32.92%, respectively. the polyphase cordic processor improves the sfdr, which is 88 db. results analysis suggested that the proposed ddc is an energy-efficient architecture that is widely used in real-time signal processing applications. table 2 comparison report of existing architectures and proposed solution synthesis parameters vuk et al. [7] (kintex-7) fs = 120 mhz r = 6 liu et al. [5] (kintex-7) fs = 3.6 ghz r = 20 proposed solution slices 37066 13552 8178 luts 69499 7269 4451 brams not available 22 10 dsp48es 1034 83 40 fmax (mhz) not available 454.5 512 power (w) not available 1.446 0.970 sfdr (db) not available 83.3 88 4. conclusion this paper briefs an fpga-based flexible ddc architecture so that it can match any digital radio specifications. the proposed design uses a polyphase and pipelined structure which can save the area and improve the operating speed. the multirate filter performs sample rate reduction and channel filtering with enhanced sensitivity and selectivity. these new design techniques increase the operating speed. furthermore, the truncation and optimum coding style are used to improve area efficiency and power reduction. additionally, the proposed design has achieved an sfdr of 88 db. thus, the presented ddc design has been enhanced in real-time applications. acknowledgement: the authors are expressed their sincere gratitude to makaut for providing the valuable xilinx tools and fpga board. references [1] a. v. oppenheim and r. w. schafer, discrete-time signal processing, third edition. prentice hall, 2010. [2] w. wolf, fpga-based system design. englewood cliffs, nj: prenticehall, 2004. [3] l. l. motta, b. a. acurio, n. f. t. aniceto and luís geraldo p. meloni, "design and implementation of a digital down/up conversion directly from/ to rf channels in hdl", integration, vol. 68, pp. 30–37, sept. 2019. [4] l. guo, f. tan, p. zhan and h. zeng, "decomposing numerically controlled oscillator in parallel digital down conversion architecture", j. circuits, syst. comput., vol. 26, no. 9, p. 1750126, feb. 2017. [5] x. liu, x. yan, z. wang, and q. deng, "design and fpga implementation of a reconfigurable digital down converter for wideband applications", ieee trans. on vlsi systems, vol. 25, no. 12, dec. 2017. [6] b. h. tietche, o. romain, and b. denby, "a practical fpga-based architecture for arbitrary-ratio sample rate conversion", j. sign. process. syst., vol. 78, pp. 147–154, feb. 2015. [7] v. obradović, p. okiljević, n. kozić and d. ivković, "practical implementation of digital down conversion for wideband direction finder on fpga", sci. tech. rev., vol. 66, no. 4, pp. 40–46, jan. 2016. 252 d. datta, h. s. dutta [8] j. thabet, r. barrak, n. kamoun, n. khouja and a. ghazel, "a reconfigurable digital down converter architecture for multistandard gnss receiver", in proceedings of the 14th international symposium on communications and information technologies (iscit), incheon, 2014, pp. 404–408. [9] a. agarwal, l. boppana and k. r. kodali, "a factorization method for fpga implementation of sample rate converter for a multi-standard radio communications", in proceedings of the 2013 tencon spring, sydney, nsw, 2013, pp. 530–534. [10] d. datta, p. mitra and h. s. dutta, "fpga implementation of high performance digital down converter for software defined radio", microsyst. technol., vol. 28, pp. 533–542, aug. 2019. [11] j. e. volder, "the cordic trigonometric computing technique", ire trans. electron. comput., vol. ec–8, pp. 330–334, sept. 1959. [12] e. b. hogenauer, "an economical class of digital filters for decimation and interpolation", ieee trans. acoustic speech, signal process, vol. assp-29, no. 2, pp.155–162, april 1981. [13] q. jing, y. li, and j. tong, "performance analysis of multi-rate signal processing digital filters on fpga", eurasip j. wirel. commun. netw., p. 31, feb. 2019. https://doi.org/10.1186/s13638019-1349-9. [14] u. meyer-baese, digital signal processing with field programmable gate arrays, springer, third edition, 2007. [15] p. p. vaidyanathan and t. q. nguyen, "a “trick” for the design of fir half-band filters", ieee trans. circuits syst., vol. cas–34, no. 3, mar. 1987. [16] a. n. willson, "desensitized half-band filters", ieee trans. circuits syst.–i: regul. pap., vol. 57, no. 1, pp. 152-167, jan. 2010. [17] mathworks hdl coder, https://www.mathworks.com/products/hdl-coder.html. accessed 14 aug. 2019. [18] r. ratan, s. sharma and a. k. kohli, "cubic lagrange polynomial-based designing of efficient interpolators", int. j. electron. lett., vol. 2, no. 1, pp. 8–16, nov. 2013. [19] c. farrow, "a continuously variable digital delay element", in proceedings of the ieee international symposium on circuits and systems (iscas88), 1998, pp. 2642–2645. [20] d. datta, p. mitra and h. s. dutta, "implementation of fractional sample rate digital down converter for radio receiver applications", in proceedings of the devices for integrated circuit (devic), kalyani, 2021, pp. 94–98. http://dx.doi.org/10.1109/devic50843.2021.9455805. [21] r. yates, "fixed-point arithmetic: an introduction" 2007. available at: https://courses.cs.washington. edu/courses/cse467/08au/labs/l5/fp.pdf. [22] s. navid shahrouzi and darshika g. perera, "hdl code optimizations: impact on hardware implementations and cad tools", in proceedings of the ieee pacific rim conference on communications, computers and signal processing (pacrim), canada, 2019, pp. 1–9. [23] z. zulfikar, "novel area optimization in fpga implementation using efficient vhdl code", jurnal rekayasa elektrika, vol. 10, no. 2, pp. 61–66, oct. 2012. 13757 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 219 256 https://doi.org/10.2298/fuee2601219b © 2026 by university of nís, serbia | creative commons license: cc by-nc-nd original scientific paper advanced machine learning-based eco-integrated model for predicting late blight in multiple cultivation systems parama bagchi1, barbara sawicka2, zoran stamenkovic3,4, piotr barbaś5, piotr pszczółkowski6, dusan markovic7, debotosh bhattacharjee8 1department of cse, rcc institute of information technology, kolkata, india 2department of plant production technology and commodities science, university of life sciences in lublin, 20-950 lublin, poland 3institute of computer science, university of potsdam, 14476 potsdam, germany 4ihp, leibniz-institut für innovative mikroelektronik, 15236 frankfurt (oder), germany 5department of potato agronomy, plant breeding and acclimatization institute-national research institute, branch of jadwisin, jadwisin, 05-140 serock, poland 6research centre for cultivar testing, słupia wielka 34, 63-022 słupia wielka, poland 7faculty of technical sciences čačak, university of kragujevac, serbia 8department of cse, jadavpur university, kolkata, india orcid id: parama bagchi https://orcid.org/0000-0002-9725-9582 barbara sawicka https://orcid.org/0000-0002-8183-7624 zoran stamenkovic https://orcid.org/0000-0002-6078-413x piotr barbaś https://orcid.org/0000-0001-7830-0116 piotr pszczółkowski https://orcid.org/0000-0002-5907-1984 dusan markovic https://orcid.org/0000-0002-7270-6702 debotosh bhattacharjee https://orcid.org/0000-0002-1163-6413 abstract. this paper presents a machine learning–driven framework for analyzing and predicting potato late blight (caused by phytophthora infestans) across two distinct cultivation systems—ecological and integrated—using six potato varieties. traditional statistical methods, including a two-factor analysis of variance (anova) and tukey’s honest significant difference (hsd) test, were applied to assess the effects of cultivation systems, potato varieties, and year. to enhance predictive accuracy and model interpretability, an advanced machine learning pipeline, termed the eco-integrated model, was developed. this model integrates smote (synthetic minority oversampling technique) for handling class imbalance, shap (shapley additive xplanations) for interpretability and feature importance analysis, and the catboost classifier for robust, high-performance prediction. the dataset, collected over three years (2018–2020), includes multi-varietal and system-specific records of late blight incidence for both ecological integrated-based data, serving as input for model training and evaluation. the received june 04, 2025; revised september 17, 2025; accepted october 07, 2025 corresponding author: parama bagchi department of cse, rcc institute of information technology, kolkata, india e-mail: paramabagchi@gmail.com mailto:paramabagchi@gmail.com 220 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… proposed eco-integrated model demonstrated high predictive capability, revealing that integrated cultivation systems are generally more effective at suppressing disease progression. moreover, substantial varietal differences were identified in late blight susceptibility, as highlighted by both statistical and machine learning analyses. these findings underline the value of incorporating explainable, data-driven approaches into plant disease forecasting. the eco-integrated model offers a scalable, interpretable, and accurate predictive solution, contributing to precision agriculture practices and supporting evidence-based decision-making for sustainable potato production and disease management strategies. key words: potato late blight, cultivation systems, disease prediction, anova, catboost, shap analysis, sustainable agriculture 1. introduction 1.1. agriculture systems sustainable farming systems play a crucial role in producing high-quality crops while minimizing their negative environmental impact. among the available strategies, ecological and integrated production systems that combine modern technologies with environmentally friendly practices are becoming increasingly important [1-5]. potato cultivation (solanum tuberosum l.) is an essential element of agricultural production in the world, and its efficiency depends on the proper management of agrotechnics, plant protection, and fertilization. the ecological system is based on natural cultivation methods, excluding synthetic plant protection products and mineral fertilizers, which contribute to the protection of biodiversity and soil health [3]. however, the integrated farming system combines conventional and ecological approaches, optimizing the use of resources and reducing chemical pressure on the environment [3, 5]. in potato cultivation, selecting appropriate varieties, optimizing crop rotation, and using biological plant protection methods are essential. studies indicate that integrated systems can increase tuber yield and quality while reducing the negative impact on the ecosystem [2, 6]. this paper analyzes the effectiveness of ecological and integrated management systems in potato cultivation, highlighting their advantages and potential challenges. in ecological potato cultivation, synthetic pesticides and herbicides are not used, and plant protection is provided only by natural methods, such as copper preparations, biological protection agents, and crop rotation. in the integrated system, however, limited use of chemical agents is allowed, but they are used only when biological and agrotechnical methods prove insufficient. fertilization in the ecological system is based exclusively on ecological fertilizers, such as compost, manure, or green fertilizers. in the integrated system, it is possible to use mineral fertilizers, but their use is rational and adjusted to the soil’s macro and micronutrient content. in ecological cultivation, plant varieties (e.g., potatoes) resistant to diseases and pests are preferred, which minimizes the need for protective interventions. the integrated system allows for a greater variety of varieties, but choosing those with increased disease resistance is still recommended. soil protection in the ecological system is crucial, which is why crop rotation, catch crops, and cover crops are used. these methods are also used in the integrated system, but to a lesser extent. in terms of yield, ecological crops are characterized by lower efficiency, but the obtained crops have a higher nutritional value and do not contain pesticide residues. in the integrated advanced machine learning-based eco-integrated model for predicting late blight in multiple … 221 system, yields are higher than in ecological agriculture, although lower than in intensive conventional agriculture. ecological cultivation requires obtaining appropriate certification following ecological farming standards. in the case of the integrated system, certification can be voluntary, including, for example, global gap or integrated production [2, 6-11]. in summary, ecological farming is a more restrictive system that relies on natural methods, while integrated farming combines ecological farming methods with limited chemicals. 1.2. phytophthora infestans one of the unresolved, unsolved issues of contemporary agricultural sciences of measurable practical importance is the problem of modeling the development of plant diseases. these processes are so complex that their theoretical foundations have not yet been developed sufficiently. also, the available empirical data is not always sufficient to create a model based on the “black box” principle. this paper’s objectives are precisely formulated in subsection 1.2.1, and the case of the potato blight epidemic (phytophthora infestans mont. de bary) was addressed. it is described in detail in subsection 1.3. based on the concepts in section 2.3, a technique for modeling phenomena in which the output signal is not directly measurable (its aggregated values for the sequence of inputs can only be estimated) was proposed. this allowed the creation of a model for predicting the date of the outbreak of the potato blight epidemic based on the data presented in the model [12, 15]. the results description, discussion, and conclusions can be found in the following sections of the paper. 1.2.1. practical issues one of the most important crops in poland is the potato, which currently covers over 600 thousand ha [13]. this is determined by its versatility of use, low soil and climate conditions, and the amount of dry matter and starch yields. since about 65% of arable land in poland is light soils, where the selection of plants is limited, the role of the potato in crop rotation is also essential as a plant that enriches soil fertility. unfortunately, potato yields are lower than those obtained in the european union by about 40% and differ from the potential potato yields in domestic climatic conditions, which, according to mazurczyk et al. [14], may range from 60 to 90 tha-1 and, in the opinion of sawicka et al. [12], 70-90 t ha-1. one of the reasons for this state of affairs is the insufficient protection of plantations against potato blight caused by oomycetes (p. infestans mont. de bary) due to the high susceptibility of genetically homogeneous potato varieties to pathogens. average losses caused by this disease amount to 8-10% worldwide and 20-30% in poland [15]. there are two phases in developing this disease: early (latent) and epidemic. during the first, p. infestans spores multiply, leading to local infections and the growth of primary infection foci. typically, 3 to 5 generations of this pathogen result in an epidemic outbreak of the disease. the periods of disease transition from the latent to the epidemic phase depend on many factors, such as the density and location of primary infection foci, susceptibility of varieties to potato blight, their share in the structure of crops, the physiological condition of plants, meteorological conditions, and changes in macro and microclimate. in polish climatic conditions, the date of the outbreak of the potato blight epidemic falls in june or july, as indicated by many years of observations [7], which depends on the temperature and rainfall distribution during the growing season. the date of the outbreak of the epidemic and the pace of its development determine the potential 222 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… yields of potatoes. the development of the epidemic is usually rapid, and after a few to a dozen or so days, almost all destruction of plant leaves is caused by potato blight. in the absence of protection against p. infestans, the losses amount to about 10-50% in central and northern european countries due to premature leaf destruction and 0-40% due to tuber infection [1, 7, 15, 16, 17]. the population of p. infestans in poland was characterized by low aggressiveness until 1988, when the occurrence of the second sexual type (a2) was first noted, which had previously been recorded only in mexico. this has created the possibility of generative reproduction, causing greater genotypic and phenotypic diversity in the population, with more remarkable adaptation to environmental conditions and the control methods used. a significant increase in the threat to potato crops from p. infestans has recently been observed. there are many methods for detecting diseases, including the use of gas sensors and other techniques such as biomarker analysis, medical imaging, and molecular testing. molecular methods include: pcr (polymerase chain reaction) and real-time pcr are some of the most commonly used methods, allowing for rapid and sensitive detection of pathogen dna in plant or soil samples. modern variants, such as real-time pcr, enable quantitative assessment of the presence of the pathogen [18]. lamp (loop-mediated isothermal amplification): this isothermal dna amplification method is faster and easier to use than traditional pcr, often not requiring advanced equipment. it can be used for rapid detection of p. infestans in the field. nested pcr: increases detection sensitivity through two amplification steps with nested primer pairs. droplet digital pcr (ddpcr) enables the precise quantification of pathogen dna by dividing the sample into thousands of separate micro-reactions. crispr-cas: modern gene editing techniques such as crispr-cas12a are being adapted to create highly specific and sensitive biosensors for detecting plant pathogens, including p. infestans [19]. biosensors: electrochemical biosensors: use electrodes modified with specific biomolecules (e.g., antibodies, aptamers, dna) to detect a pathogen's presence via electrical signal changes. optical biosensors (e.g., fluorescent, photoelectrochemical): use optical phenomena to detect interactions between a pathogen and a recognition element on the sensor surface. nanomaterials can be used to increase the sensitivity of these sensors. microfluidic biosensors: integrate microfluidic systems with recognition and detection elements, enabling rapid and automated analysis of small samples. zoospore chemotaxis can be used to increase detection efficiency. immunosensors: use specific antibodies to bind pathogen antigens, leading to a signal detectable by electrochemical or optical methods [19]. visual and imaging methods: rapid immunochromatographic tests (lateral flow assays): similar to pregnancy tests, they allow rapid detection of pathogen antigens without the need for sophisticated equipment [1]. hyperspectral imaging: analysis of the spectrum of light reflected from plants can reveal early physiological changes associated with p. infestans infection, often before visible advanced machine learning-based eco-integrated model for predicting late blight in multiple … 223 symptoms appear. the use of machine learning can improve the accuracy of this method [20]. fluorescence imaging using molecular probes: specific dyes or molecular probes can bind to specific pathogen structures or respond to changes in plant cells induced by infection, allowing them to be visualized under a fluorescence microscope [19]. other methods: volatile ecological compound (voc) analysis: p. infestans infection can lead to changes in the voc profile emitted by plants. analysis of these compounds using gas chromatography-mass spectrometry (gc-ms) or electronic noses can facilitate the early detection of infection. rnai-based methods: detection of specific dsrna (double-stranded rna) sequences characteristic of p. infestans can be used to identify the pathogen. nanotechnology can support the delivery of dsrna to plants for protection, as well as in detection systems [19]. the choice of the appropriate method depends on the specific needs, such as sensitivity, speed, cost, feasibility in the field, and the stage of disease development that we want to detect. often, different methods are combined to obtain more reliable and comprehensive results. however, none of these methods guarantees a complete prediction of the p. infestans epidemic. new, more aggressive genotypes of this pathogen have appeared, infecting leaves and stems [16, 21]. if only one mating type occurs, p. infestans reproduces exclusively vegetatively, and the source of infection is only tubers. during generative reproduction, resting spores (oospores) appear, which can survive for up to 2 years in crop residues in the soil. they constitute an additional source of infection and a threat to potato plantations, resulting in the earlier appearance of potato blight by up to one month in practice [10, 15, 17]. since the date of the potato blight outbreak is not known a priori, the classic solution to the problem is to perform protective treatments cyclically "just in case". unfortunately, due to the costs, many medicines cause a decrease in crop profitability. as a result, they are performed in polish conditions instead of the necessary 5-8 treatments [9, 15, 16, 17]. air, soil, and water are polluted [21]. 1.2.2. related works on model implementation for the prediction of potato blight in this category of related works, we shall compare the latest works on model implementation that were used to predict potato blight infection, which have been performed using machine learning techniques. upon surveying this fact, we concluded that very few works utilize an extensive, improved ecological and integrated dataset, as we have in this work, and even fewer employ advanced machine learning models. li et al. [22] and larson et al. [23] implemented the plb-si-xgboost model for enhanced detection of potato blight using sentinel-2, uav, and ground data. sentinel-2 data obtained an average accuracy of 70% in this case. also, the authors investigated the early warning of crop diseases using random forest, balanced random forest, xgboost, and catboost models, and obtained a mean auc of 0.9912 for classes ‘pest’ and ‘no pests. the dataset used in this work was released by the national agricultural innovation project (naip) of the indian council of agricultural research (icar). ahmed et al. [24] also investigated the extent of damage caused to potato blight plants using random forests, and the model achieved an accuracy of 97%. the dataset was gathered across diverse plants in many regions of pakistan, and the authors implemented many machine learning methods like k224 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… nearest neighbors (knn), random forest (rf), decision tree (dt), naive bayes (nb), support vector machine (svm), and logistic regression (lr). zhou et al. [25] address the process of carbohydrate metabolism in potato tubers during tuber germination. the authors, focusing on “overexpression of protein kinase”, traced the pathways and mechanisms of starch degradation and modification during tuber germination. the improvements should significantly improve the quality and readability of the manuscript, which is not discussed here. over the past three decades, an increase in the infectivity of p. infestans has been observed, which is associated with changes in the population of this pathogen [22]. potato blight caused by p. infestans is the most serious potato problem worldwide. in [22], li et al. revealed significant changes in mating types, with a1 dominating before 2012 and a2, a1a2, and self-fertile types becoming common later. most isolates showed the medina haplotype ia, and only two showed the haplotype idia. pathogenicity studies of p. infestans identified 67 distinct pathotypes, while metalaxyl resistance increased from 32.7% (2010–2014) to 78.3% (2016–2021). fourteen multilocus genotypes (mlg) were identified, with upgma clustering revealing five major clades (yn_1 to yn_5), including genotype eu_13_a2 in yn_1. thus, clonal propagation, tuber migration, fungicide pressure, host selection, and limited sexual reproduction have driven the genetic diversity and population dynamics of p. infestans in recent years. these changes lead to earlier outbreaks, faster disease development, increased pathogenicity of the fungus, and the breakdown of genetic resistance in many potato varieties, making traditional protection methods less effective [11, 21, 23, 24]. the increase in the severity of potato blight and the associated losses justify the need for effective disease control. currently, advanced decision support systems play an essential role, such as: ▪ blitecast: a system forecasting the risk of potato blight based on weather conditions [23]. ▪ simphyt: a simulation model assessing the development of the disease depending on environmental factors [26]. ▪ phytopre: a computer information and decision support system for potato blight used in switzerland [27]. ▪ negfry: a decision support system implemented in poland, adapted to local climatic conditions [28]. many of these programs were developed based on western european observations, which may limit their effectiveness in other climatic conditions. therefore, further research aims to assess the efficacy of various potato protection strategies against p. infestans in central-eastern poland and to develop methods for monitoring and forecasting the epidemic based on meteorological data and the development stages of potatoes. the latest works discussed have one significant gap, which we have addressed here. all the above existing works have mainly focused on ‘pests’ and ‘no-pests’ diseases, which could suggest an affordable way of categorizing plants. however, in this work, our primary objective is to develop a predictive model by refining and enhancing a model termed ‘eco integrated’, which has been initialized with the latest varieties of potato blight infections for both ‘ecological’ and ‘integrated’ categories. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 225 now, let us discuss a few machine learning models based on recent models used to predict potato blight infection rate. gerakari et al. [29] formulated a critical review on potato blight infection levels, and here several potato infection diseases were discussed. joshi et al. [30] employed ai-based classification approaches and applied them to the potato dataset. in this work, a total of 56 weighted indices were utilized, and simulation models using svm and hybrid models were developed by the authors. dolatabadian et. al. [31] worked on a review paper using existing literature on image-based crop detection using ai. here, different machine learning based classifiers and multiple works based on classifying plant diseases have been discussed. dey et al. [32] used an optimized cnn that reduces the number of trainable parameters and achieved a test accuracy of 98.6%. the model predicted high accuracy, specifically 99% for early blight, 98% for late blight, and 100% for healthy potatoes. a comparative analysis with vgg-16, alexnet, and resnet50 estimates the superiority of the present approach. al zakari et al. [33] used an lstmrnn model for predicting potato blight images. the model was more efficient than all other models and rendered an r2 value of 0.98. zhu et al. [34] proposed a multimodal ai model, achieving an accuracy rate of 92.15% on the test set, which yielded the best evaluation compared to other models. the multimodal ai model proposed by the authors achieved a test accuracy of 98.43%. joshi et al. [35] attempted to use yolov8n, a deep convolutional neural network, to categorize potato blight infection, thereby achieving a 96.5% map. the model proposed by the authors will help to detect and classify plant diseases or pests across different crops. previous studies have provided a wide range of methods for the diagnosis of p. infestans, including molecular techniques (such as pcr and lamp), advanced biosensors (electrochemical, optical), visual methods (immunochromatographic tests, hyperspectral imaging), and analysis of volatile ecological compounds [21,22]. however, a fundamental limitation of all these approaches is their reactive nature, i.e., they identify the presence of the pathogen or traces of infection after its occurrence [1, 11, 21, 23, 24]. consequently, none of the available methods offers the possibility of proactively predicting the moment of the p. infestans outbreak, which is crucial for early, effective preventive measures and minimizing crop losses. this critical gap in predictive capacity is the central justification for our research. our work aims to fill this important void by predicting epidemics, including developing a predictive model to analyze specific environmental biomarkers and early plant physiological signals. we believe our innovative approach will contribute to the transition from reactive detection to proactive risk management of potato blight epidemics, offering farmers the tools for early intervention and increased food security. none of the methods can predict the favorable conditions for outbreaks (e.g., ideal weather for developing p. infestans). for this purpose, predictive models based on meteorological and biological data are used. table 1 illustrates the significant research conducted over the past five years on the application of ai and machine learning tools in agriculture. 226 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… table 1 machine learning in potato disease detection reference/year datasets used technique used performance/accuracy gerakari et al. [29], 2025 review paper on different potato-level infections. joshi et al. [30], 2024 56 simple and weighted indices used for simulation lasso, svm, multiple linear regression, and two hybrid models, namely lasso-svm and smlr-svm, were used. in terms of performance, the smlr model rendered the best results. walid et al [36], 2023 images of potato leaves cnn model 99.22% aldhyani et al [37], 2022 plant village dataset support vector machine (svm), knearest neighborhood (k-nn), random forest, decision tree 91.28% sinshaw et al. [38], 2021 plant leaf images from the holeta potato farm inceptionv3, vgg16, and vgg19 pretrained models were used inceptionv3 rendered an 87% score. 1.3 main contributions of the present work this study aims to develop and evaluate a predictive model for the occurrence of potato late blight (p. infestans) across two cultivation systems—ecological and integrated—using six different potato varieties. the analysis focuses on assessing the impact of cultivation practices and varietal characteristics on the risk of infection as well as the effectiveness of plant protection strategies. the findings are expected to support the optimization of potato management practices by enabling better alignment of protection measures and informed selection of suitable varieties under specific cultivation conditions. ▪ null hypothesis (h₀): the cultivation system (ecological vs. integrated) and potato variety do not significantly affect the risk of potato late blight (p. infestans) or the effectiveness of plant protection methods. ▪ alternative hypothesis (h₁): the cultivation system (ecological vs. integrated) and potato variety significantly affect the risk of potato late blight (p. infestans) and the effectiveness of plant protection methods. additionally, to justify the above, we have used the catboost classification method to determine which cultivation method is more fruitful, ecological or integrated. this work provides insight into which form of cultivation method must be used to combat the spread of p. infestans. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 227 2. materials and methods 2.1. field experiment field research was conducted in 2016-2018 at the experimental station in parczew on light soil and clay sands of a good rye complex with a slightly acidic ph (ph 5.5 in kcl) [39]. the experiment included two potato cultivation systems, integrated and ecological, and six potato varieties: ▪ medium early: irga, jagna, and mila, medium late: arkadia, salto, late: ania. this experiment was conducted in 3 replicates. in a split-plot design: the main factor (cultivation system: ecological vs. integrated) was randomly assigned to the large plots (main plots) in each replication. the subfactor (potato variety) was randomly assigned to the smaller plots (subplots) within each main plot. the main factor (cultivation system: ecological vs. integrated) was randomly assigned to the large plots (main plots) in each replication. the subfactor (potato variety) was randomly assigned to the smaller plots (subplots) within each main plot (table 2). table 2 experimental layout *mp1, mp2: main plots in each replication; **potato variety: randomly distributed within each main plot table 2 depicts the experimental layout of the main plots and the different split-plot design. the main plots test the cultivation system (ecological vs integrated). subplots test the potato varieties within each cultivation system. replication (3 blocks) ensures that results are statistically reliable. rotation of varieties’ order across blocks avoids bias due to location effects. the subplot varieties encompass the various varieties of potato. some major descriptions are described below: ▪ field experiment design: split-plot layout ▪ main plot factor: cultivation system (integrated vs. ecological) ▪ subplot factor: potato variety (irga, jagna, mila, arkadia, salto, ania) ▪ replications: 3 (blocks i, ii, iii) ▪ design: split-plot ▪ randomization: cultivation systems are randomly assigned to main plots within each block; potato varieties are randomly assigned to subplots within each main plot [40]. this design ensures proper randomization at both the main plot and subplot levels, which is crucial for correct statistical analysis in the split-plot design. summary of the scheme: experimental design: split-plot factors: main: cultivation system (2 levels); subordinate: potato variety (6 levels) replications: 3 per cultivation system, which gives a minimum of 18 plots each year. years: 2016, 2017, 2018 block main plot cultivation system subplots (potato varieties) i mp1 ecological mila, salto, irga, ania, arkadia, jagna mp2 integrated jagna, mila, salto, irga, ania, arkadia ii mp1 integrated arkadia, jagna, mila, salto, irga, ania mp2 ecological ania, arkadia, jagna, mila, salto, irga iii mp1 ecological salto, irga, ania, arkadia, jagna, mila mp2 integrated mila, salto, irga, ania, arkadia, jagna 228 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… location: parczew measurements: regular assessments of disease and pest development, yield, and their components. analysis: statistical analysis of variance for the split-plot design, post-hoc tests. this experimental design enables a reliable assessment of the effects of the cultivation system and potato varieties on the parameters studied under field conditions. including repetitions and experimenting for three years increases the reliability and generalization of the results. the experiment was planned and conducted in accordance with the principles of good agricultural practice (gap), ensuring the credibility and usefulness of the obtained results [41]. each cultivation system used a different crop rotation and production technology. integrated system: crop rotation: potato → spring barley → field bean → winter wheat → catch crops (white mustard). fertilization: mineral fertilization was used, compensating for the uptake of components in doses of 110 kg n, 60 kg p, and 60 kg k per hectare, as well as compost at a dose of 35 t ha-1. tillage treatments: the care included mechanical treatments for emergence (harrowing with a weeder, one-time ridging, and covering), and just before emergence, the herbicide afalon 450 sc (2 dm³ ha-1) was applied. after emergence (when the plants were 15-20 cm tall), fusilade super 125 ec (2 dm³ ha ¹) was used. plant protection included chemical protection agents, applied in accordance with the risk thresholds: ▪ potato beetle: bulldock 0.25 ec (0.25 dm³ ha-1), bancol 50 wp (0.4 kg ha-1). ▪ potato blight: dithane m-45 80 wp, acrobat mz 69 wp, curzate m 72.5 wp, tat-too c 750 sc, brestanid 502 s.c. decisions on the use of agrochemicals were made based on observations of the plantations and state plant protection inspection state research institute reports. ecological system: crop rotation: potato → spring barley → red clover + grass (2 years) → winter wheat → catch crop (white mustard + spring vetch). fertilization: no mineral fertilizers were used. only compost was used (straw + red clover + manure, 35 t ha-1). tillage treatments included: ▪ harrowing with a weeder before emergence. ▪ three-time top dressing. ▪ one-time hand weeding before the last ridging (40-50 h ha-1). pesticide use was limited in plant protection: ▪ potato beetle: novodor 02 sc (2.5 dm³ ha-1, 2 treatments), permasect 250 ec (0.5 dm³ha-1, 1 treatment). ▪ potato blight: no chemical protection. 2.2. characteristics of potato varieties machine learning perspective on potato cultivar resistance to late blight (p. infestans) resistance to potato late blight (p. infestans) is a critical trait influencing the selection of cultivars for specific cultivation systems, particularly under the constraints of advanced machine learning-based eco-integrated model for predicting late blight in multiple … 229 ecological or integrated farming practices. from a machine learning standpoint, the varying levels of resistance across potato cultivars can be treated as categorical or ordinal target variables in classification models, where resistance levels (e.g., high, intermediate, low) are predicted based on environmental, genetic, and agronomic input features. high resistance cultivars such as ania, known for their high natural resistance to late blight, serve as key positive class instances in supervised learning models. these cultivars often possess resistance genes (e.g., rpi genes), which can be encoded as genomic features or proxy variables in feature engineering. their reduced dependency on chemical treatments makes them especially relevant in ecological farming systems. in machine learning models, these cultivars are associated with lower disease incidence labels under a range of climatic conditions, contributing to the classifier’s ability to generalize well under ecological constraints. in terms of intermediate-resistance cultivars [42], such as arkadia and salto, partial resistance is exhibited, but increased susceptibility is observed under prolonged wet or humid conditions. these varieties offer valuable insight into predictive models, as they represent cases where disease development is highly influenced by temporal environmental variables (e.g., rainfall, humidity). in machine learning, time-series weather data can be integrated with cultivar-specific features to train models that dynamically assess risk and trigger protection recommendations in integrated systems. these cases highlight the need for hybrid decisionsupport systems combining statistical thresholds with ml-driven forecasting. finally, lowresistance cultivars such as irga and mila tend to require intensive fungicidal treatment, especially under high-humidity conditions. in a classification framework, these cultivars often align with high-risk labels, and their disease progression patterns can inform both supervised learning algorithms (e.g., catboost, random forest) and explainability tools, such as shap, for uncovering the relative importance of factors like cultivar genotype, weather trends, and soil type. these cases emphasize the necessity of early detection systems and precise intervention scheduling, which can be optimized using predictive maintenance–style algorithms in crop protection planning. modeling implications in machine learning models for late blight prediction, cultivar resistance level acts as a critical feature or classification target depending on the modeling goal—either to predict disease incidence given cultivar and environmental context, or to recommend cultivars based on projected disease pressure [9,15]. furthermore, model training should account for interactions between cultivation system type (ecological vs. integrated), environmental stressors (humidity, temperature), and genetic resistance markers. this can be achieved through ensemble learning methods or interaction-aware models like catboost, which inherently handle categorical variables and feature interactions [8, 9, 11, 42]. so, incorporating cultivar resistance levels into machine learning pipelines enhances the precision and interpretability of late blight forecasting models. it also supports datadriven decision-making in sustainable agriculture, enabling dynamic cultivar recommendation systems used for specific climatic and cultivation systems. 230 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… 2.3. meteorological conditions meteorological conditions in the study years (2016–2018) may have significantly influenced the development and spread of potato blight (p. infestans), as this pathogen's growth is closely related to air temperature and humidity (table 3). table 3 rainfall, air temperature, and the hydrothermal coefficient of sielianinov. during the growing season of potatoes, according to the meteorological station in uhnin (2016–2018) year specification april may june july august september total 2016 rainfall (mm) 17.1 93.0 63.8 63.1 141.0 77.3 455 temperature (°c) 9.2 14.9 18.2 21.9 20.0 14.3 hydrothermal c coefficient (k*) 0.6 2.0 1.2 0.9 2.3 1.2 2017 rainfall (mm) 39.9 46.2 117.0 170.0 42.9 8.9 425 t temperature (°c) 14.0 18.4 17.0 18.7 18.1 14.3 hydrothermal c coefficient (k*) 2.1 1.4 1.1 2.9 0.8 0.2 2018 r rainfall (mm) 30.0 38.0 101.0 53.1 70.1 34.0 326 temperature (°c) 9.4 15.0 17.5 21.8 18.7 14.3 hydrothermal coefficient (k*) 0.8 1.9 0.8 1.2 0.8 0.8 *hydrothermal coefficient classification according to the formula: k = p/∑t ×10, where: p – total precipitation in a given period (e.g., month) [mm], ∑t – total average daily temperatures in the same period [°c]. extremely dry: k ≤ 0.4; very dry: 0.4 < k ≤ 0.7; dry: 0.7 < k ≤ 1.0, rather dry: 1.0 < k ≤ 1.3; optimal: 1.3 < k ≤ 1.6; rather humid: 1.6 < k ≤ 2.0; humid: 2.0 < k ≤ 2.5; very humid: 2.5 < k ≤ 3.0; extremely humid: k > 3.0 table 3 depicts how the weather influences potato blight infection. influence of weather conditions on the development of potato blight: 2016 – favorable conditions for potato blight occurred because of high rainfall in may (93.0 mm) and august (141.0 mm), and a high hydrothermal coefficient (k > 2.0 in may and august) created favorable conditions for the development of potato blight. strong soil and plant moisture in august could have been particularly dangerous, favoring the pathogen's rapid spread. however, dry periods in july (k = 0.9) could have temporarily limited the development of the disease. 2017 – there was an intense infection pressure of the pathogen in the first half of the growing season. exceptionally high rainfall in june (117.0 mm) and july (170.0 mm), and humid conditions (k = 2.9 in july) could have led to rapid infection and a rapid epidemic of potato blight—the presence of high air humidity for an extended period favored secondary infections. however, september was exceptionally dry (k = 0.2), which could have limited further development of the disease later. 2018 – conditions limiting the development of potato blight. lower rainfall totals (326 mm throughout the growing season) and relatively low values of the hydrothermal coefficient (june, august – k = 0.8) could have hindered the development of the pathogen. in particular, drier conditions in august could have limited the epidemic because p. infestans requires high humidity for spore germination and plant infection. in such conditions, the advanced machine learning-based eco-integrated model for predicting late blight in multiple … 231 disease could have appeared at a lower intensity and developed more slowly than in wetter years. summary: the highest risk of an epidemic occurred in 2017 when high rainfall in june and july provided ideal conditions for infection and the rapid spread of potato blight. 2016 local epidemics could have happened, especially in august, but drier periods could have limited their scope. in 2018, the blight risk was lowest because conditions were drier, which could have significantly inhibited disease development. these differences in weather conditions could also affect the effectiveness of plant protection – in wetter years, the efficacy of biological methods could be limited, and in an integrated system, more intensive use of plant protection products would be necessary. the overall interpretation is that, ▪ 2016 → wettest year (455 mm). good rainfall distribution, especially in august (very wet). ▪ 2017 → moderate rainfall (425 mm) but very uneven: heavy rain in july (170 mm), very dry in september (8.9 mm, k* = 0.2). ▪ 2018 → driest year (326 mm). hydrothermal coefficient mostly ≤1 → dry/stressful conditions for crops. 2.4. soil conditions analysis of the content of available forms of phosphorus (p₂o₅), potassium (k₂o), and magnesium (mg) and soil ph in 2016–2018 indicates some variations in soil richness, which may affect potato growth and yield (2016-2018) (table 4). table 4 abundance of soil available phosphorus, potassium, and magnesium, and ph of the soil (2016–2018) years p₂o₅ (mg∙100 g⁻¹ of soil) k₂o (mg∙100 g⁻¹ of soil) mg (mg∙100 g⁻¹ of soil) ph (1m kcl) 2010 20.3 11.7 4.3 5.7 2011 21.3 12.7 8.1 6.3 2012 15.9 13.3 7.4 6.1 mean 19.2 12.6 6.6 phosphorus content (p₂o₅): the average content of available phosphorus in the soil was 19.2 mg∙100 g⁻¹ and varied from year to year. the highest value was recorded in 2017 (21.3 mg∙100 g⁻¹), while in 2018, the content of p₂o₅ was the lowest (15.9 mg∙100 g⁻¹). the decrease in phosphorus observed in the last year of the study may indicate intensive plant uptake or lower soil availability [39, 43]. potassium content (k₂o). the soil was characterized by a relatively stable content of available potassium, with an increase in its level in subsequent years. in 2016, it was 11.7 mg/100 g; in 2018, it increased to 13.3 mg/100 g⁻. this increase may be due to the applied fertilization practices or reduced potassium uptake by plants in each season [39]. the increase in 2017 may have resulted from natural changes in nutrient availability or applied fertilization [39]. soil ph: the soil ph ranged from 5.7 to 6.3, indicating a slightly acidic nature of the soil. in 2016, the soil had the lowest ph (5.7), which could have affected the limited availability of 232 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… some nutrients. in subsequent years, the ph value increased to 6.3 (2017) and 6.1 (2018), which could have promoted better assimilation of nutrients by plants [39, 43]. summary: in the analyzed period, some fluctuations in the content of nutrients and soil ph were observed. particularly significant changes were concerned with phosphorus levels (a decrease in 2018) and magnesium levels (a sharp increase in 2017). the stable potassium level and the rise in ph in 2017–2018 could have improved plant growth conditions. these changes may have impacted potato yields and the effectiveness of fertilization methods employed in the ecological and integrated cultivation system. the overall observations are that: ▪ phosphorus (p₂o₅): adequate overall but variable; depletion in 2012 might indicate higher crop uptake or leaching. ▪ potassium (k₂o): fairly stable, showing improvement — soils are maintaining k supply. ▪ magnesium (mg): noticeable improvement from 2010 to 2012 — better nutrient availability for crops. ▪ ph: slightly acidic soils throughout (5.7–6.3). most crops grow well in this range, but strongly acid-sensitive crops may require liming at the lower end (5.7). 2.5. observations and measurements during the potato growing season, systematic observations were conducted in field experiments to assess the rate of spread of potato blight (p. infestans). these observations were performed every 10 days using the methodology developed by pietkiewicz et al. [44], which allows for precise monitoring of the development of the disease over time. methodology for assessing potato blight according to pietkiewicz et al. [44]. frequency of observations: every 10 days, starting from the moment the first symptoms of the disease appear. scope of assessment: observations focused on the above-ground parts of plants, mainly leaves, where symptoms of late blight most often occur. assessment scale: a 9-point scale was used, where 9 indicated no disease symptoms, while 1 indicated complete plant destruction. calculation of the disease's spread rate: based on the collected data, the blight's spread rate was calculated and expressed as an increase in infection per unit of time. this method allows for assessing the dynamics of disease development depending on various factors, such as weather conditions or plant protection methods used. data collection methods: ▪ visual observations: regular inspections of plantations by trained personnel to observe plant conditions. ▪ direct measurements: use measuring tools like tape, scales, and moisture meters. ▪ sampling: collecting soil, leaf, and tuber samples for laboratory analysis. ▪ data recording: accurately recording all observations and measurements in field diaries or electronic databases, roztropowicz et al. [40]. 2.6. statistical analysis three-way analysis of variance (anova) was performed using sas version 9.2 [45]. the fisher-snedecor f test was used in the study to assess the significance of sources of variability at the significance level of p = 0.05. in the case of attributes expressed as percentages, particularly those close to 0 or 100, a logarithmic transformation was used to normalize the data advanced machine learning-based eco-integrated model for predicting late blight in multiple … 233 distribution, following the recommendations of koronacki et al. [46]. after performing the calculations, the data were retransformed to enable interpretation of the results in the original measurement scale. the analysis aimed to assess the effect of the cultivation systems and potato varieties on the studied variables and determine the significance of their mutual interactions. the experiment was conducted in three repetitions. for detailed comparisons of means, the tukey multiple comparison test (t-tukey) was used, which allowed for the separation of statistically homogeneous groups of means (homogeneous groups) and the determination of the least significant differences (lsd), designated as hsd (tukey’s honest significant difference). the significance of the sources of variability was assessed using the fishersnedecor f test, which enabled the verification of hypotheses regarding the influence of the studied factors on the analyzed parameters. the rate of potato blight spreading, depending on the observation date, was calculated using regression calculus. for calculations, observation terms were encoded, with the first date assigned as “0”, the second as “10”, the third as “20”, and so on. leaf infection was expressed in logarithmic values corresponding to a 9° grade, as determined by the formula. the formula for calculating logarithmically expresses leaf infection using the van der plank approach [47]. y = ln x/ (100 − x) (1) where: y – logarithmically transformed value of leaf infection; x – values expressed in hundredths. they make it possible to express the leaf surface damage percentage in a straight line. the rate of potato blight spreading was regarded as a unitary increase in infection over time. this formula allows the transformation of percentage values so that the obtained relationship takes the form of a straight line. assuming a unitary increase in the infection rate over time, it is possible to use regression analysis, where the independent variable is time (coded as 0, 10, 20, …) and the dependent variable is 𝑦. such a notation allows for a linear interpretation of the disease progression and facilitates further statistical analyses. 2.7. proposed model we propose a novel machine learning framework, eco_integratedmodel, designed to predict the incidence of potato late blight using a hybrid dataset consisting of ecological and integrated cultivation system data. the model architecture incorporates a three-phase machine learning pipeline: data preprocessing using smote, predictive modeling using catboost, and explainable ai analysis using shap. the pipeline is tailored to handle class imbalance, support accurate classification, and enable interpretable predictions. our proposed model consists of the following stages, as shown in figure 1. figure 1 illustrates the workflow adopted in the present study. the framework is composed of four major modules: ▪ input data and preprocessing – this module involves data collection, cleaning, transformation, and preparation for modeling. ▪ predictive modeling – the prepared dataset is used to train and evaluate a catboost classifier for accurate prediction. ▪ explainable ai (xai) with shap analysis – shap (shapley additive explanations) values are employed to interpret the model, identifying the contribution of each feature to the predictions. ▪ global prediction and interpretation – a shap summary plot is generated to provide a global view of feature importance and overall prediction behavior. 234 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… 1. model input and data processing the present model takes as input a combined dataset representing ecological and integrated potato cultivation systems. due to natural class imbalance in the data—arising from unequal representation of cultivation system types—we applied smote (synthetic minority oversampling technique) during preprocessing. smote synthetically generates new samples in the minority class, ensuring a balanced dataset and reducing model bias. this step was essential for enhancing classifier performance and improving generalization across cultivation scenarios. 2. predictive modeling with catboost after data balancing, we employed the catboost classifier, a gradient boosting algorithm optimized for handling categorical features and known for its superior performance on tabular datasets. catboost employs ordered boosting and bayesian bootstrapping to minimize overfitting and reduce randomness in split decisions, thereby providing consistent results across repeated runs. in our experiments, the model was trained, optimizing for classification accuracy in identifying whether the data point belonged to an ecological or integrated system. 3. explainable ai with shap analysis after the training process was completed, we applied shap (shapley additive explanations) to interpret model predictions and evaluate feature importance. shap assigns each feature an importance value for individual predictions, enabling granular insight into how each variable (e.g., humidity, cultivar, system type) contributes to the final classification. in the case of the present model, the application of shap analysis helped us to find: ▪ the most influential features across both ecological and integrated classes. ▪ enabled interpretation of the catboost model’s decision-making process. 4. global interpretation of shap summary plot to find the global importance of all features, we generated a shap summary plot, ranking variables by their average absolute shap values. this visualization helped us to determine whether the ecological or the integrated process could be used for efficient prediction of potato blight. figure 1 shows eco_integratedmodel represents a novel application of advanced machine learning techniques in sustainable agriculture. unlike traditional statistical models, our approach effectively helps to predict and understand disease risks under varying cultivation strategies. to the best of our knowledge, this is the first study to incorporate a balanced, multiyear ecological and integrated dataset into a fully interpretable, machine learning–based blight prediction system. this innovation demonstrates the value of combining diverse agronomic data with state-of-the-art ml tools for precision agriculture and decision support. fig. 1 block diagram of the proposed model; source: own advanced machine learning-based eco-integrated model for predicting late blight in multiple … 235 3. results this section analyzes the results of the importance of features in the catboost model. the importance of features was calculated using the permutation method for the catboost classifier. the factors in the model using the “integrated” features had a more significant influence than the “ecological” model. this means that the features associated with the “integrated” model system determined the rate of spread of potato blight more significantly than the “ecological” system. we shall divide our experimental results into three sections namely: (a) statistical results: in this section, we shall discuss the performance of bio-stimulants in ecological and integrated crop systems using potato blight data. the rate of spread of potato blight over time is illustrated in figure 2. the 50% leaf blade surface infestation by p. infestans in the ecological cultivation system occurred 40 days after the first blight spots were noticed. the use of the integrated cultivation system was delayed by 21 days. fig. 2 potato late blight in the ecological and integrated crop system (mean for the years 2018–2020) figure 2 shows the rate of spread of potato blight (p. infestans) in two cultivation systems: ecological and integrated. the x-axis indicates the number of days from the appearance of the first symptoms, and the y-axis shows the logarithm of the infection quotient log e(1−x), where x is the proportion of infected leaf area. in the integrated system, the same 50% infection of leaf blades occurred with a delay of 21 days, i.e., after (40 + 21) = 61 days. reduction of assimilation surface: leaves are organs of photosynthesis, the process by which the plant converts solar energy into sugars (mainly starch). these sugars are then transported to the tubers and stored as reserve material, constituting their yield. when 50% of the leaf area is infected by potato blight, the active photosynthetic surface is reduced by half. this drastically reduces the amount of assimilates produced. disruption of assimilate transport: p. infestans infection destroyed leaf tissue and disrupted the plant's transport system (phloem). even if some leaves remain healthy, the damaged tissues hinder the flow of produced sugars to the tubers. diversion of plant resources: plants attacked by the pathogen activate defense mechanisms that require energy and nutrients. these resources are redirected from growth and storage in the tubers to fight the infection. the more leaf infestations there are, the more resources are involved in defense, at the expense of tuber development. premature leaf dieback: severe leaf blight infection leads to premature leaf dieback. if a significant part of the leaf (i.e., leaf surface) dies 236 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… before the natural end of the growing season, photosynthesis is abruptly interrupted, which prevents further starch accumulation in the tubers. therefore, reaching 50% infection of the leaf blades by ph. infestans means that the potato plant has a significantly reduced ability to photosynthesize, transport assimilates, and efficiently store crops in tubers. the earlier such high infection levels occur, the more significant the losses can be expected to be. delaying the onset of 50% infection in the integrated system by 21 days gave the plants more time to produce and store crops before infection reached critical levels. the effect of plant protection against the blight depended on the plant’s resistance towards the pathogen and its reaction to fungicide application (table 5). table 5 infection coefficients of p. infestans over time varieties resistance as a 9-degree scale according to coboru* crop production systems ecological integrated ania 8 0.147 0.079 arkadia 5 0.228 0.127 irga 2 0.205 0.195 jagna 5 0.188 0.150 mila 5 0.229 0.131 salto 6 0.082 0.07 *central research centre for crop research in poland influence of cultivar resistance: generally speaking, the higher the cultivar resistance score (on the 9-point coboru scale, where 9 indicates the highest resistance), the lower the p. infestans infection rate. comparing cultivars such as "ania" (resistance 8) with less resistant cultivars, e.g., "irga" (resistance 2), "ania" showed significantly lower infection rates in both cultivation systems. on the other hand, cultivars with lower resistance ("arkadia", "irga", "jagna", "mila") showed generally higher infection rates compared to more resistant cultivars (e.g., "ania" and "salto"). influence of cultivation system: for most potato cultivars studied, the p. infestans infection rate was lower in the integrated system compared to the ecological system. this suggests that the methods used in the integrated system (including controlled use of synthetic plant protection products and integrated pest and disease management strategies) are more effective in reducing the development of potato blight. the exception was the cultivar "irga", where infection rates were similar in both cultivation systems. this may indicate that this cultivar is so susceptible to p. infestans that differences in cultivation systems have less impact (table 3). interaction between cultivar resistance and cultivation system: for cultivars with high resistance ("ania", "salto"), the difference in infection rates between ecological and integrated systems was relatively small, but still more favorable for the integrated system. this suggests that these cultivars are naturally more resistant, and the cultivation system has less impact on their susceptibility (table 4). for cultivars with lower resistance ("arkadia", "jagna", "mila"), the difference in infection rates between systems is more significant. this indicates that the integrated system offers more protection against p. infestans infection for susceptible cultivars. in summary, potato cultivar resistance is a key factor influencing susceptibility to potato blight. selecting more resistant cultivars is a fundamental strategy in reducing the risk of infection. the cropping system also plays a significant role in the rate of p. infestans infection. the integrated system, probably due to more intensive control methods, is more effective in inhibiting p. infestans development than the ecological system. the effectiveness of the advanced machine learning-based eco-integrated model for predicting late blight in multiple … 237 cropping system in reducing infection is more pronounced in less resistant varieties. in the case of highly resistant varieties, natural resistance plays a dominant role. these data underscore the importance of variety selection and appropriate agronomic practices in managing late flights and effectively minimizing yield losses. significance of the results: analysis of infection rates allows for a better understanding of how individual varieties cope with p. infestans infection in different cultivation systems. these results can serve as a basis for selecting varieties resistant to the disease and optimizing production systems. it is worth considering additional protection measures in ecological systems, where natural plant defense mechanisms may not be sufficient to limit the spread of the disease. such an interpretation emphasizes both the role of variety resistance and the influence of production systems on the development of infection, which can be helpful when planning plant protection strategies in agricultural practice. fig. 3 (a) late blight rate of infection in variety irga, (b) late blight rate of infection in variety jagna, (c) late blight rate of infection in variety mila (d) late blight rate of infection in variety arkadia (e) late blight rate of infection in variety salto (f) late blight rate of infection in variety ania the potato varieties tested reacted differently to the cultivation system. the medium-early, edible variety irga, popular in poland and characterized by white flesh, was more susceptible to potato blight than other varieties (figure 3). infestation of 50% of the above-ground parts of the 238 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… plants occurred 34 days after the first blight spots appeared in the ecological system. in the integrated system, this moment occurred 6 days later. (b) machine learning outcomes: in this section, we will discuss feature ranking and analyze how ecological and integrated data affect the prediction of potato blight infection rates using the catboost classifier. the potato varieties tested reacted differently to the cultivation system. the mediumearly, edible variety irga, popular in poland and characterized by white flesh, was more susceptible to potato blight than other varieties (figure 3(a)). infestation of 50% of the above-ground parts of the plants occurred 34 days after the first blight spots appeared in the ecological system. in the integrated system, this moment occurred 6 days later. in the case of the medium-early variety of jagna, an infection of 50% of leaf blades in the ecological system occurred 41 days after the first symptoms of the disease appeared (figure 3(b)). using chemical protection and mineral fertilization, the integrated cultivation system delayed this moment by 10 days. the medium-early, edible variety mila, valued in food processing, showed better resistance to potato blight in the integrated system than the previous varieties. fifty % of leaf blade infections occurred 36 days after the first symptoms were observed, and the integrated cultivation system extended this period by 22 days (figure 3(c)). this variety is characterized by higher resistance to p. infestans, rated at 6.5° on a nine-point scale. the medium-late variety arkadia, grown in an ecological system, was infected by p. infestans at a rate of 50%, 34 days after the first blight spots appeared. the use of the integrated system extended the vegetation period of this variety by 20 days (figure 3(d)). the variety salto, also medium-late and edible, reached a level of infection of 50% in the ecological system after 58 days from the appearance of the first blight symptoms. cultivation in the integrated system extended the vegetation period of this variety by 40 days (figure 3(e)). the late, edible variety ania, grown in an ecological system, was infected by 50% 46 days after the first blight spots were noticed. the integrated cultivation system extended the vegetation period of this variety by 41 days (figure 3(f)). the importance of factors corresponding to the “integrated” model refers to varieties grown in an integrated agricultural system that combines conventional and ecological plant protection methods against potato blight, diseases, and weeds in general. the “ecological” model refers to potatoes grown under ecological farming conditions without synthetic fertilizers and chemical plant protection products. therefore, integrated agricultural methods have a significantly greater influence on the infection rate than ecological methods, particularly without mineral fertilization and protection against potato blight. from figure 3, it can be deduced that, integrated technology extended the period of infection of 50% of the leaf blade surface (e.g. by 8-20 days depending on the variety) by 6 days in case of variety irga, by 9 days in case of variety jagna, by 21 days in case of variety mila, by 27 days in case of variety arkadia, by 40 days in case of variety salto and by 40 days in case of variety ania. permutation of the importance of features the first variety discussed was the late ania variety. on average, regardless of the variety, the “integrated” system (importance value: 0.0647) and the “ecological” system (importance value: 0.0326) had significantly different values (figure 4). advanced machine learning-based eco-integrated model for predicting late blight in multiple … 239 fig. 4 the importance of integrated and ecological system features in predicting the rate of potato blight spread for the ania variety the significance of the trait importance values for the ania cultivar indicates how much the cultivation system affects the potato blight’s spread rate of the potato blight. the value 0.0647 achieved by the integrated system means that, in the case of the ania cultivar, the integrated system's traits significantly impact the prediction of the risk of infection. integrated methods, combining mineral fertilization and chemical protection with ecological practices, control blight development more effectively, possibly due to better plant nutrition, their excellent resistance to p. infestans infection, and more effective protection against the pathogen. ecological system (0.0326): the lower importance value suggests that factors characteristic of ecological farming have a minor impact on the infection rate in the ania cultivar. the lack of chemical protection against weeds and potato blight, as well as the absence of synthetic mineral fertilizers, made the plants more susceptible to stress and diseases. their response to blight depended mainly on the natural defense mechanisms of the cultivar. the difference between these values highlights that in the case of the late ania variety, the integrated system provides more effective protection against potato blight, translating into a more significant impact of these factors on the model results. it can also be concluded that this variety responds better to more intensive management than to ecological practices. the two factors of experience analyzed are the ecological and integrated management systems. the factor ‘integrated’ shows a higher significance (0.0647) than the ecological (0.0326), which suggests that it has a more significant influence on model development. in most cases, the integrated system leads to better results, consistent with the observations of improved model performance through feature engineering. catboost, which handles tabular and categorical data well, combined with shap analysis and the smote method, allows for more interpretable and fair classification results. figure 5 shows the significance calculated using the permutation method for the catboost model for the medium-early variety irga. the results show that the integrated system had a higher significance value (0.0557) than the ecological system (0.0243), which suggests that it has a more significant impact on the result. 240 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… fig. 5 the importance of integrated and ecological system features in predicting the rate of spread of late blight for the medium-early potato variety irga the higher value for the integrated system (0.0557) means that the factors related to the integrated system had a much more significant impact on predicting the infection rate than those associated with the ecological system. combining mineral fertilization and chemical plant protection products with ecological practices resulted in more effective integrated methods for reducing the spread of p. infestans on irga potato plants. the lower value for the environmental system (0.0243) suggests that under ecological farming conditions, without synthetic plant protection products, the features related to this system had a negligible impact on the model result. plants were more susceptible to stress and late blight development, indicating the limited effectiveness of natural protection methods for this variety. the difference between the evaluated cropping systems highlights that the irga variety responded better to the more intensive management within the integrated system, resulting in better yield stability and better control of blight spread. figure 6 shows the importance of integrated and ecological system features in predicting the late blight spread rate for the medium-early potato variety jagna. the analysis of the potato blight spread rate results on the medium early jagna variety (figure 6) indicates the factors influencing the disease spread, assessed using the permutation method for the catboost model. the significance value for the ecological system (0.0918) was higher than for the integrated system (0.0606), which suggests that ecological methods in cultivating this variety play a more significant role in predicting the spread of potato blight than in the integrated system. this indicated that the environmental factors, such as soil health and overall ecosystem quality, have a more significant impact on the dynamics of disease development compared to the integrated approach, which includes agronomic practices, varietal traits, and economic factors. therefore, the ecological conditions in which the jagna variety is grown seem to have a more substantial effect on the spread of the disease than the agricultural practices associated with the integrated system. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 241 fig. 6 the importance of integrated and ecological system features in predicting the rate of spread of late blight for the medium-early potato variety jagna the analysis of the data of the medium-early variety mila (figure 7) shows the significance of the features calculated using the permutation method for the catboost model. both the analyzed variables—ecological and integrated systems—had a similar impact on the model results. the significance value for the integrated system was 0.0865, while for the ecological system, it was 0.0829, which proves that both systems contributed almost equally to the prediction of the spread of late blight for this variety. fig. 7 the importance of integrated and ecological system features in predicting the rate of spread of late blight for the medium-early potato variety mila 242 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… this indicates a harmonious relationship between the integrated and the ecological aspects, which may mean that both factors similarly impact assessing the area. in the case of the medium-late variety salto, the significance values are different (figure 8). the integrated system showed a negative value (0.0162), while the ecological system had a relatively low positive value (0.0163). this suggests neither does the system play a substantial role in predicting the spread of late blight for this variety, with the integrated approach potentially having an inverse effect on the model outcome. fig. 8 the importance of integrated and ecological system features in predicting the rate of spread of late blight for the medium-late potato variety salto the analysis of the results of the potato blight infection in the case of the medium-late cultivar arkadia reveals that there are significant differences in the traits associated with the two cultivation systems (figure 9). the integrated system showed a higher significance value (0.0689) than the ecological system (0.0447), indicating that agricultural practices, including fertilization and the use of plant protection products, played a more significant role in predicting the spread of potato blight for this cultivar. this also suggests that the arkadia cultivar responds more strongly to the conditions provided by the integrated approach, in which the combination of conventional and ecological methods increases plant resistance to p. infestans infection. on the other hand, the lower significance of the ecological system emphasized its limited impact on the dynamics of this disease development in this cultivar, probably due to the lack of mineral fertilization and chemical protection. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 243 fig. 9 the importance of integrated and ecological system features in predicting the rate of spread of late blight for the medium-late potato variety arkadia in the case of the arkadia variety, various factors that are related to the integrated and ecological management systems had a more significant influence on the model than in the previous case. the integrated system still dominated over the ecological one, but the difference between them was smaller than the average for the whole experiment. the arkadia variety may be more susceptible to factors related to the cultivation system than the late ania variety. ecological farming conditions played a more significant role than in the previous case, which may mean that arkadia is more sensitive to ecological protection methods against potato blight. the increase in the importance of features may suggest that this variety is more dynamic in response to environmental variables. this means that combining different sources of information improves the quality of prediction. integrating different sets of features leads to better model performance, which is confirmed by the higher value of the significance index. therefore, it is worth using an approach that combines different data sources to improve classification results. (c)data preprocessing and experimental setup: all experiments were conducted in python using the scikit-learn, imbalanced-learn, catboost, and shap libraries. to ensure reproducibility, a fixed random seed (seed = 42) was applied across the python environment, numpy, and random number generators. the dataset (salto1.csv) was imported in tabular format, and two variables, ecological and integrated, were selected as model features. since the dataset did not include a binary outcome variable, a synthetic target vector (0/1) was generated to simulate classification. to address potential class imbalance, the synthetic minority oversampling technique (smote) was applied, which generates synthetic minority class samples based on nearestneighbor interpolation. this ensured a balanced dataset before model training. the resampled dataset was divided into training (70%), validation (15%), and test (15%) sets using stratified splitting to preserve class distribution. also, to perform model evaluation, the model performance was evaluated on training, validation, and independent test subsets using accuracy as the primary metric. in addition, a five-fold stratified cross-validation was performed 244 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… to assess model robustness across different data partitions, and the mean accuracy across folds was reported. receiver operating characteristic (roc) curves were plotted using predicted class probabilities for the test set, and the area under the curve (auc) was calculated to quantify discrimination ability. (a) (b) fig. 10 the cross-validation accuracy in the case of the potato tuber salto from figures 10(a) and (b), it is evident that the catboost model achieved a training accuracy of 83.3%, indicating that it was able to capture patterns in the training data. however, the validation accuracy was substantially lower at 50.0%, suggesting possible overfitting and limited generalization on unseen data during model development. on the independent test set, the model reached an accuracy of 77.8%, demonstrating moderate predictive capability beyond the training sample. the five-fold stratified cross-validation provided further insight into model stability, yielding fold accuracy between 54.2% and 70.8% with a mean cross-validated accuracy of 61.7%. the variability across folds indicates that the model’s performance is sensitive to data partitioning, which may be a consequence of the limited feature set (ecological and integrated) and relatively small dataset size. overall, the results show that the model is capable of learning useful patterns but exhibits inconsistent generalization. improving performance will likely require expanding the feature set (e.g., climatic, soil, and genetic parameters) and increasing the dataset size to enhance robustness and reduce overfitting. figure 11(a) and (b) show the model performance on ania potato tuber. (a) (b) fig. 11 the cross-validation accuracy in the case of the potato version ania advanced machine learning-based eco-integrated model for predicting late blight in multiple … 245 in the case of ‘ania’, the catboost model achieved a training accuracy of 87.7%, but validation (57.1%) and test (46.7%) accuracies were considerably lower, indicating overfitting and limited generalization. cross-validation analysis showed fold accuracies ranging from 47.4% to 72.2%, with a mean accuracy of 59.7%, further highlighting variability and instability in performance across different data partitions. these results suggest that, while the model can learn patterns in the training data, it struggles to generalize to unseen samples consistently. the observed instability is likely attributable to the limited feature set (ecological and integrated) and the relatively small dataset size. future improvements may be achieved by expanding the dataset, incorporating additional agronomic, climatic, and genetic variables, and exploring regularization or featureselection strategies to improve model robustness. in the case of the variety ‘mila’ shown in fig 12(a) and (b), the performance analysis depicts a notable discrepancy between training/validation accuracy and test accuracy. while the training (84.48%) and validation (84.62%) accuracies suggest that the model was able to learn and generalize reasonably well during training, the test accuracy drops significantly to 53.85%. this sharp decline indicates that the model may not be generalizing effectively to unseen data for this variety, possibly due to overfitting or high variability in the test set. cross-validation results further highlight this inconsistency, with scores ranging from as low as 29.41% to as high as 75%, and a mean cv accuracy of 62.06%. the wide variation suggests that the model’s performance on mila is highly sensitive to the choice of data split. this instability could be linked to a limited sample size, class representation imbalance, or greater intra-class variation within this variety. (a) (b) fig. 12 the cross-validation accuracy in the case of potato tuber mila for the potato variety jagna depicted by figures 13(a) and (b), the training (84.48%) and validation (84.62%) accuracies are consistent and relatively high, suggesting that the model has learned the classification patterns well during training. however, like the case of mila, the test accuracy drops sharply to 53.85%, indicating a clear gap between learning within the trainingvalidation phase and performance on unseen data. these drops highlight the potential for overfitting or the presence of greater heterogeneity in the test samples of jagna. the crossvalidation results provide additional insight. accuracy scores vary widely, ranging from 29.41% to 81.25%, with a mean cv accuracy of 64.49%. compared to mila, jagna shows a slightly higher mean cv accuracy, but the variability across folds again reflects instability in the 246 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… model’s predictive ability for this variety. this inconsistency suggests that the classification of jagna may be influenced by sample distribution or inherent variability in its characteristics. overall, while jagna achieves stable learning during training and validation, its fluctuating cv outcomes and poor test accuracy point to the need for model refinement. techniques such as advanced feature engineering, dataset balancing, or variety-specific modeling approaches could help achieve more consistent and reliable classification performance for this variety. (a) (b) fig. 13 the cross-validation accuracy in the case of the potato version jagna we next come to the potato variety irga shown in figures 14(a) and (b). the performance metrics from this model show a noticeable gap between training and validation accuracy. training accuracy reaches 83.67%, but validation accuracy is lower at 70.00%, suggesting that while the model learns patterns from the training data, it struggles to maintain the same level of generalization on unseen validation samples. the test accuracy (63.64%) lies between the two, reflecting moderate predictive performance but still below the training benchmark. crossvalidation outcomes reinforce this observation. the fold accuracies range between 50.00% and 64.29%, with a mean cv accuracy of 58.57%. this relatively modest mean value, along with the narrow range of scores, indicates that the model’s classification performance is consistent but not particularly strong across folds. unlike the cases of mila and jagna, the variability here is less extreme, though the overall accuracy remains limited. in summary, while the model achieves good training performance, the drop in validation and test accuracy suggests overfitting to the training data and insufficient generalization. the cv results point to stable but moderate predictive capacity. to improve outcomes, strategies such as tuning hyperparameters, incorporating regularization, or expanding the dataset with augmentation could help the model capture more robust and discriminative features. finally, let us come to the variety arkadia. the performance analysis is shown in figures 15(a) and (b). the model shows a high training accuracy of 87.69%, but its validation (57.14%) and test accuracy (53.33%) are considerably lower. this gap indicates overfitting, where the model learns the training patterns well but fails to generalize to unseen data. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 247 (a) (b) fig. 14 the cross-validation accuracy in the case of the potato version irga the cross-validation scores provide additional insight, with accuracies ranging from 47.37% to 72.22% and a mean cv accuracy of 59.71%. while the mean cv result is slightly better than the test accuracy, the variability across folds highlights that the model’s predictive performance is unstable and sensitive to data partitioning. for all the models, the performance criteria in terms of roc and auc are low, but our dataset is limited. the use of deep learning techniques is more appropriate in the case of pictorial data. in our case, we have tabular data. but in the future, we will try more classifiers to improve the classification rates. (a) (b) fig. 15 the cross-validation accuracy in case of potato version arkadia c) results on model accuracies: now, we shall discuss the model accuracies for all the data with respect to the potato versions, namely ania, arkadia, mila salto, irga, and jagna. let us talk about the first variety, i.e., salto. in this variety, the catboost classifier achieved a training accuracy of 83.3%, indicating a reasonable fit to the training data. however, the validation accuracy dropped to 50.0%, pointing towards overfitting and limited generalization capability. the independent test set accuracy was 77.8%, suggesting that the model retains some predictive ability when applied to unseen data, although performance remains inconsistent. cross-validation results further support this 248 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… observation, with fold accuracies ranging from 54.2% to 70.8% and a mean accuracy of 61.7%. the variability across folds highlights potential model instability, likely stemming from the limited number of features available (ecological’, integrated’) and the relatively small dataset size. these findings indicate that while the model can capture certain patterns, its generalization remains constrained. expanding the feature set (e.g., climatic, soil, genotype information) and increasing dataset size are recommended to improve robustness and reliability in future work. 4. practical recommendations in ireland, due to the cool and wet climate and the susceptibility of potato cultivars to potato blight (p. infestans), producers apply 12 to 15 fungicide applications per year, often weekly from plant emergence. in seasons favorable to the development of the disease, the number of applications may increase. the effectiveness of p. infestans control depends on the available fungicides and the stage of plant growth. the emergence of fungicide resistance in the pathogen is a key challenge. in denmark, since 2019, cases of reduced efficacy of mandipropamide (a fungicide from the carboxylic acid amides caa) have been reported, and analysis confirmed resistance of strain eu_43_a1 to this substance [21, 48, 49]. this is the first detection of caa resistance in p. infestans, which may have important implications for european potato protection strategies [48]. the emergence of resistance to caa in p. infestans may have significant consequences for potato blight control strategies throughout europe. therefore, it is necessary to monitor the effectiveness of the fungicides used and to search for alternative protection methods, such as cultivating varieties more resistant to blight or integrated disease management methods [20]. the results of the analysis of the importance of features in the catboost model for different potato varieties indicate a varied effect of the cultivation system (integrated and ecological) on the rate of spread of potato blight, which is confirmed by the results of studies by other authors [20,46]. the differences between the varieties: ania, irga, and arkadia showed a higher value of the importance of features for the integrated system, which suggests that agrotechnical practices, such as mineral fertilization and chemical plant protection, play a key role in limiting the spread of the blight. in the case of the jagna variety, the ecological system was more critical, indicating its better adaptation to ecological conditions or a more significant role of environmental factors, such as soil health and biodiversity. the mediumearly variety mila was characterized by a similar effect of both systems, which suggests that both ecological and integrated practices may provide a comparable level of protection against light. in the case of the salto cultivar, both the environmental and integrated systems had low importance values, which may indicate a specific resistance to this cultivar or a limited response to potato blight in both systems [7, 8, 10, 12, 26, 49]. 4.1. the rate of spread of potato blight the rate of spread of potato blight (p. infestans) was analyzed depending on the cultivation system. in the ecological system, infection of 50% of the leaf blade surface occurred faster than in the integrated system, where the use of chemical protection and fertilization delayed infection [1]. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 249 potato varieties differed in their susceptibility to blight. irga was the most susceptible, reaching 50% infection after 34 days (in the ecological system) and after 40 days (in the integrated system). jagna was infected after 41 days in the ecological system, and the integrated system delayed this moment by 10 days. mila showed greater resistance, with infection after 36 days (in the ecological system) and a delay of 22 days in the integrated system. the arkadia variety reached 50% infection after 34 days (in the ecological system), and the integrated system extended this moment by 20 days. the medium-late salto variety showed the highest resistance, with 50% infection after 58 days (in the ecological system), while the integrated system delayed this by 40 days. ania, a late variety, was infected by 50% after 46 days, while the integrated system extended the vegetation period by 41 days. in summary, the integrated cultivation system significantly slowed the development of the disease, and the resistance of the varieties was a key factor in limiting infection. the latest research on potato blight (p. infestans) highlights the importance of integrated plant protection and breeding resistant varieties as key elements in managing this disease. it was indicated that cultivating resistant varieties can significantly reduce the need for fungicides, which are essential in sustainable agriculture [10,50,51,52]. in addition, the research conducted by scientists from wageningen university & research in the netherlands shed new light on the mechanisms of p. infestans infection. specific interactions between the pathogen and the host plant were discovered, which may lead to developing new strategies for protecting potatoes against blight. analysis of 47 potato blight epidemics in the netherlands (1950–1996) revealed three periods with mean values, with disease severity strongly associated with the number of days with precipitation and hours with temperature 10°c to 27°c and humidity >90%, and disease reduction with hours with temperature >27°c and global radiation. linear discriminant analysis, which utilized the previous year’s blight status and meteorological variables, correctly classified 87% of cases, highlighting the key roles of days with precipitation and previous blight status in predicting epidemic intensity [53]. in the context of yield losses, the data from 2024 indicates that, on unprotected potato plantations, yields can be as low as 10 to 15 tons per hectare, depending on weather conditions [10]. for this reason, integrated protection methods, which combine the cultivation of resistant varieties with appropriate agrotechnical treatments, are crucial for minimizing losses caused by p. infestans. resistance to potato blight is often correlated with the length of the growing season of a given variety. studies indicate that varieties with a longer growing season exhibit higher levels of resistance to p. infestans, which may be related to these plants’ genetic and physiological characteristics [10,12, 17, 26, 53]. in summary, the latest studies emphasize the need to employ integrated potato protection strategies against blight, including breeding resistant varieties and implementing optimal agrotechnical practices, to manage this disease and minimize yield losses effectively. the rate of spread of potato blight (p. infestans) is closely related to the resistance of individual potato varieties to this pathogen. as the resistance of varieties to leaf blight increased, the coefficient of the rate of spread of p. infestans decreased. this means that varieties with higher resistance showed a slower rate of disease development, consistent with previous studies indicating the vital role of variety resistance in limiting the rate of infection [8, 10, 11, 53]. regression analysis showed that the trend of p. infestans spread in the studied varieties is best described by a second-degree polynomial curve, while the resistance of varieties to this pathogen follows a logarithmic curve. this suggests that even 250 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… a small increase in variety resistance can lead to a significant decrease in the spread of disease, which emphasizes the importance of breeding varieties with increased resistance in potato blight management strategies. 4.2. comparison with other studies based on similar ecological-integrated model(s) the results are consistent with previous studies, which indicate that cultivars grown in an integrated system often achieve higher resistance to potato blight due to the combination of plant protection treatments and appropriate fertilization [11, 39, 40, 54]. the studies by smith et al. [52] showed that integrated practices can reduce pathogen pressure by up to 40%, compared to ecological systems [3, 8, 11]. at the same time, the results for the jagna cultivar are consistent with the work of green [55], sawicka et al. [10, 12], and noaema et al. [11], who showed that some cultivars perform better in an ecological system, especially when the role of soil health and biodiversity in limiting pathogen development is emphasized. the maximum detection accuracy obtained by larson et al. [23] using the plb-si-xgboost model was 70%. another latest work by zarrouk et al. [56] used yolo (you only look once) and the two-pass rcnn (region-based convolutional neural network) with special focus on the potential use of drone-based agricultural surveillance for the detection of potato blight infections. now, we will discuss a brief comparative analysis of treating potato blight infection disease using the latest machine learning models, as shown in table 6. from table 6, we can see that, even when the best test accuracy of 99.54% was obtained by [57], the datasets on which the authors worked were essentially potato-based images. in our case, our dataset is novel and is a uniform mix of integrated and ecological datasets. none of the existing works, those of which have attained high recognition rates, have worked with images of potato blight infection. in this case, our work is truly novel because we have worked with a new data set spanning ecological and integrated data spanning 2018-2020, and we have improved a machine-learning model, which could further help in predicting potato blight infection. it is evident from table 6 that most of the recent studies on potato blight and leaf disease detection have predominantly relied on image-based datasets, often focusing on single cultivation systems or controlled experimental conditions. for example, anusuya et al. [57] achieved an accuracy of 99.54% using several deep learning models, including vgg16, resnet50, and inceptionv3, while dey et al. [61] and zhu et al. [62] reported similarly high accuracies (98.6% and 98.43%, respectively) on potato leaf image datasets. likewise, al zakari et al. [60] demonstrated that hybrid architectures such as cnn-lstm can achieve accuracy levels above 97% on standardized datasets. on the other hand, chi et al. [59] used the copernicus satellite dataset, which is quite different from leaf-based imagery, and their best model (msts-rf) achieved a comparatively lower performance (r² = 0.71). dolatabadian et al. [58] contributed more from a review perspective, consolidating different detection strategies rather than proposing a single model. advanced machine learning-based eco-integrated model for predicting late blight in multiple … 251 table 6 comparative analysis ref. dataset details accuracy anusuya et al. [57] leaf disease dataset after applying several deep learning models, including vgg16, resnet50, inceptionv3, mobilenetv2, and a custom-developed cnn, the highest test accuracy obtained was 99.54%. dolatabadian et al. [58] comprehensive review work discussion of various techniques aimed at the detection of image-based crop disease chi et al. [59] the copernicus dataset included c-band images. various classifiers were used, including cart decision trees (cart), gradient tree boosting (gtb), and random forest (rf). among all of these, the msts–rf model performed best, with an rmse of 20.50 and an r² of 0.71. al zakari et al [60] z-score standardized dataset the best performance was achieved by the cnn-lstm model, which yielded the highest accuracy of 97.1%. dey et al [61] dataset of potato leaf disease. the model achieved 98.6% test accuracy. zhu et al [62] dataset of potato images the present model, based on mscresvit, msc-text cnn, and ct-cnn, rendered an accuracy of 98.43 % on the test dataset. present work tabular data of ecological and integrated-based regression a maximum auc of 76% was achieved in contrast, the present work introduces a novel dataset that integrates both ecological and integrated cultivation systems, which none of the existing studies have addressed. unlike prior works that rely primarily on direct potato leaf images, our dataset incorporates a balanced mix of ecological and integrated field data, offering more realistic insights into disease prediction under diverse cultivation conditions. while existing models often report very high recognition rates, their applicability remains constrained to image-specific datasets. our approach, however, emphasizes broader generalization and practical relevance for predicting potato blight across various cultivation systems. although our current model may not achieve recognition rates as high as some image-based approaches—largely due to the limited size of our dataset—it nevertheless contributes a unique regression-based perspective. looking ahead, we plan to employ more advanced classifiers to tackle regression-based data better and further strengthen prediction accuracy. 4.3. summary of results the research results indicate that the choice of the cultivation system should depend on the farm's priorities. the integrated system offers higher efficiency but requires chemicals, while the ecological system is less invasive but can lead to more significant yield losses in unfavorable conditions. the appropriate cultivation model choice should consider economic and environmental aspects [2,3,8,9,10,17,18,63,64]. both management systems had a comparable effect on the potato blight model, which suggests that both the integrated and ecological approaches to sowing provide essential information. the lack of clear dominance of one of the 252 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… factors indicates the possibility of their complementarity, i.e., both systems may provide different but equally important aspects of information for the model. in contrast to the previous results, where the integrated system had a much higher significance, the difference was minimal, possibly due to changes in data processing, class balance (e.g., after smote), and other modeling factors. hence, it is worth analyzing the data more thoroughly to determine whether combining both factors improves the model results or if one brings redundant information. 4.4. practical significance the differences between varieties in the rate of spread of p. infestans suggest that the choice of cultivation system should be adapted to the specific characteristics of a given variety. varieties such as ania, irga, or arkadia may be more effectively protected in an integrated system, while the jagna variety with intermediate susceptibility to p. infestans may be preferred in ecological farming [3, 10]. the results of the conducted analysis confirm that the effectiveness of potato blight (plb) management depends on both the cultivation system and the specific features of potato varieties [63]. the higher importance of the integrated system features for most varieties indicates the vital role of agrotechnical practices in limiting the pathogen's spread, which aligns with current integrated pest management strategies. at the same time, the observed differences between varieties suggest the need for further research on genetic improvement of plant resistance and adaptation of protection strategies to specific cultivation conditions [64]. 4.5. limitations and future research directions although the results obtained provide valuable information, it is worth noting that the analysis was based on specific growing conditions and only on six potato varieties. further studies should include a more significant number of varieties and consider various environmental conditions, allowing for a better understanding of the interaction between the cultivation system and resistance to potato blight. it would also be advisable to conduct long-term studies considering the variability of weather conditions [56], as climate significantly impacts potato blight development and the effectiveness of the individual cultivation system. although the results obtained provide valuable insights, certain limitations should be acknowledged. first, the analysis was conducted under specific growing conditions and included only six potato varieties, which may restrict the generalizability of the findings. future studies should examine a larger number of varieties across diverse environments to capture better the interaction between cultivation systems and resistance to potato blight. second, the study did not account for several potential confounders that could have influenced the results. these include unmeasured environmental variables such as microclimatic differences, soil heterogeneity, and disease pressure, as well as management practices like fertilization regimes, pesticide use, and irrigation strategies. addressing these factors in future research would allow for a more precise estimation of the true effects of cultivation systems on blight resistance. finally, the study was limited to a short time frame, while potato blight development and the effectiveness of cultivation systems are strongly influenced by climate variability across years. long-term experiments incorporating weather fluctuations would provide advanced machine learning-based eco-integrated model for predicting late blight in multiple … 253 more robust evidence and improve our understanding of how cultivation systems perform under changing climatic conditions. 4.6. summary of results based on programming context in conclusion, our analysis demonstrates that the catboost classifier accurately predicts the impacts of ‘ecological’ and ‘integrated’ varieties across various classes of potatoes, showcasing its robustness and reliability in programming logic. additionally, the shap analysis has emerged as a valuable tool for effectively interpreting the significance of ecological and integrated varieties across different classes of potatoes. we conclude that, in most of the varieties of potatoes, the integrated varieties were substantially important. this, in turn, will help the farmers to educate themselves and act accordingly so that future crop plantations can be enriched and thereby predict potato blight. 5. conclusions the major findings of this study demonstrate that the integrated cropping system provided more effective plant protection against p. infestans, mainly due to the intensive use of chemical inputs. this system resulted in better control of weeds, pests, and diseases, and consequently higher production efficiency. however, its reliance on synthetic plant protection measures underscores concerns regarding sustainability and environmental impact. in contrast, the ecological cropping system fostered more balanced plant growth and improved soil fertility, particularly through crop rotation with red clover and grass. nevertheless, the absence of adequate blight protection increased the risk of yield losses, and the longer regeneration cycle limited production efficiency. thus, ecological management offers environmental advantages but requires additional strategies to ensure disease resilience and yield stability. at the varietal level, differences in performance highlight the importance of matching varieties to cultivation systems: ▪ jagna performed best under ecological conditions, reflecting strong adaptability to reduced-input management. ▪ mila demonstrated stable performance across both systems, indicating its suitability for diverse production strategies. ▪ ania and arkadia achieved higher efficiency in the integrated system, indicating their dependence on agrotechnical support for optimal yield and disease resistance. ▪ salto exhibited inconsistent results, including negative outcomes under the integrated system, pointing to potential structural or management-related limitations. the results confirm that the varietal characteristics interact strongly with cultivation systems, and the choice of strategy should integrate biological, environmental, and socioeconomic considerations. the predictive model developed in this study supports integrated potato disease management by enabling early identification of blight risk and guiding targeted protection strategies. the future recommendations are as follows: ▪ long-term studies are needed to evaluate the cumulative effects of ecological and integrated systems on soil health, biodiversity, and potato quality. ▪ variety-specific optimization should be pursued to align potato genotypes with the most suitable management systems. 254 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… ▪ refining ecological protection strategies, including the use of resistant cultivars, biocontrol agents, and optimized crop rotations, is essential to reduce yield losses without compromising sustainability. ▪ the integration of predictive models with real-time weather and field data can enhance the precision of blight forecasting and reduce unnecessary chemical inputs. ▪ socio-economic analyses should be conducted to balance productivity with farmer adoption, cost-effectiveness, and consumer demand for sustainable produce. overall, while integrated cropping systems currently provide higher protection efficiency, the ecological systems hold potential for sustainable production if supported by improved varietal selection, optimized rotations, and predictive decision-support tools. acknowledgement: the work presented in this paper was supported by the german federal ministry for education and research in the form of the brandenburg/bayern initiative for integrating artificial intelligence hardware subjects in the university curriculum (bb-ki chips), project no. 16dhbkio20. references [1] b. sawicka and j. kuś, "changes in spreading and developing the potato blight (phytophthora infestans [mont.] de bary) under ecologic and integrated production system conditions", in proceedings of 2nd international conference on the alternative control methods against plant pests and diseases, lille,2002, 04-07.03., p. 42. [2] j kuś, "the preliminary comparison of their farming systems (conventional, integrated, ecological)", annals of agriculture. univ. poznań, vol. 307, no. 2, pp. 119–126, 1998. [3] t. f. döring and s. knapp, "ecological versus conventional potato production: yield, quality, and disease resistance under different management practices", agriculture, ecosystems & environment, vol. 290, p. 106747, 2020. [4] w. święcicki, a. kowalska and p. nowicki, "sustainable agricultural systems in the 21st century", pwn scientific publishing house, warszawa, 2020. [5] l. jankowski, b. wierzbicka and t. malinowski, "application of integrated systems in plant production", journal of sustainable agriculture, vol. 45, no. 3, pp. 123–135, 2021. [6] p. nowicki, k. zielińska and d. kaczmarek, "potato production efficiency in different farming systems", polish journal of agronomy, vol. 38, no. 2, pp. 67–80, 2019. [7] b. sawicka "wpływ dolistnego stosowania stymulatorów wzrostu na tempo szerzenia się phytopthora infestans na roślinach ziemniaka", acta agrophysica, vol. 85, pp. 157–168, 2023, (in polish). [8] b. sawicka, "efektywność ochrony ziemniaka przed phytopthora infestans w zależności od technologii uprawy, odmiany i warunków środowiska", pamiętnik puławski, vol. 130, no. 2, pp. 661–671, 2002, (in polish). [9] b. sawicka, "terminy pojawiania się i rozwoju p. infestans w zmiennych warunkach pola uprawnego", acta agrophysica, 126, vol. 6, no. 2, pp. 537–548, 2005 (in polish). [10] b. sawicka, p. barbaś, d. skiba, a.h. noaema and p. pszczółkowski, "harnessing soil diversity: innovative strategies for potato blight management in central-eastern poland", land, vol. 13, p. 953, 2024. [11] a.h. noaema, b. sawicka and p. pszczółkowski, "effectiveness of protection of early potato cultivars against phytophthora infestans mont de bary depending on the protection strategy", journal of food engineering and technology, vol. 6, no. 2, pp. 49–57, 2017. [12] b. sawicka, w. michałek and p. pszczółkowski, "uwarunkowania potencjału plonowania średnio późnych i późnych odmian ziemniaka w warunkach środkowo-wschodniej polski", biuletyn ihar, vol. 259, pp. 219–228, 2011, (in polish). [13] fao. world food and agriculture – statistical yearbook, 2024. isbn: 978-92-5-139255-3. book. full text available at: https://openknowledge.fao.org/handle/20.500.14283/cd2971e [14] w. mazurczyk, a. wierzbicka and c. trawczyński, "harvest index of potato crops grown under different nitrogen and water supply", acta sci. pol., agricultura, vol. 8, no. 4, pp. 15–21, 2009. [15] b. sawicka and j. kapsa, "effect of varietal resistance and chemical protection on the potato late blight (phytophthora infestans [mont.] de bary) development", in report of the meeting of the pathology section of the eapr, 10–14 july 2001, poznan (poland). potato res., vol. 44, no. 3, pp. 303–304. [16] b. sawicka, p. pszczółkowski and b. krochmal-marczak, "efektywność nowych odmian ziemniaka w warunkach różnych programów ochrony przed p. infestans", parietin puławski, vol. 142, pp. 411–421, 2006, (in polish). advanced machine learning-based eco-integrated model for predicting late blight in multiple … 255 [17] a. ivanov, e.o. ukladov and t.s. golubeva, "phytophthora infestans: an overview of methods and attempts to combat late blight", journal of fungi, vol. 7, no. 12, p. 1071, 2021. [18] w. tyburski, "origin and development of ecological philosophy", problemy ekorozwoju, vol. 1, no 1, pp. 7–15, 2006. [19] t. bao, j. zhang, y. liu and w. liu, "cascade amplification-crispr/cas12a photoelectrochemical– fluorescent biosensor for enhanced detection of phytophthora infestans", microchemical journal, p. 113641, apr 2025. [20] p. bagchi, b. sawicka, z. stamenkovic, d. markovic and d. bhattacharjee, "potato late blight outbreak: a study on advanced classification models based on meteorological data", sensors, 2024, vol. 24, p. 7864, 2024. [21] a. kaur, d. doyle, d. e. l. cooke, e. mullins and s. kildea, "first report of the phytophthora infestans eu_43_a1 clonal lineage and associated picesa3 mutation g1105s in ireland", new disease reports, vol. 49, no. 2, 2024. [22] j. li, y. feng and c. tan, "genetic structure and dynamic population diversity of phytophthora infestans during 2010–2021 in yunnan, china", j plant pathol, vol. 107, pp. 379–393, 2025. [23] e.l. larson, l.e. migiliano, y. chen and a.j. givens, "mefenoxam sensitivity in us-8 and us-23 phytophthora infestans from wisconsin", plant health problems, vol. 22, no. 3, p. 272, 2021. [24] i. ahmed, m. khalil, s. ghulam, j. mahmood, k. batool, n. khalid and p. arshad, "optimizing potato disease detection in pakistan with machine learning: a comparative analysis", in proceedings of the ieee 3rd international conference on emerging trends in electrical, control, and telecommunication engineering (etecte), 2024, pp. 1–6. [25] f. zhou, f. wang, x. zhang, y. lu, r. bi, s. yang, l. lu and l. li, "physiological and metabolomics analyses revealed that overed-pression of cbl-interacting protein kinase 23 accelerate tuber sprouting in potato", horticulture, vol. 11, no. 4, p. 342, 2025. [26] g. meito, m.p. bortolussi, s.z. dal magro and l.v.c. midlander, "potato late blight control based on the blithest forecast system on the rio grande do sul plateau, brazil controle da requiem da batata com base no sistema de prevision blackest no planalto do rio grande do sul. ciencia rural", santa maria, vol. 55, no. 4, p. e20230691, 2025. [27] t. musa, a. kogi, h. gütlin, s. schnee, j. masana-codina and k.e. sullam, "potato late blight control with a botanical product and reduced copper applications", iorio preprint, 2025. [28] l.j. dowley, "comparison of the negfry decision support system with routine fungicide applications for the control of potato late blight in ireland", european association for potato research. in proceedings abstracts of conference papers: pathology section meeting. poznań, 2001, pp. 19–20. [29] m. gerakari, a. kistler’s, k. kleftogianni, e. tani, p.j. bebeli, v. papasotiropoulos, "breeding of solanaceous crops using ai: machine learning and deep learning approaches—a critical review", agronomy, vol. 15, no. 3, p. 757, march 2025. [30] d. joshi, p. krishnan, a. vashisth, m. kundu, a. rani, t.k. bag, "ai-based machine learning and multiple linear regression approach to simulate the effect of weather on the crop age at first appearance of potato late blight (phytophthora infestans (mont.) de bary) disease", potato research, pp. 1–24, 2024. [31] a. dolatabadian, t. x. neik, m.f. danilevicz, s.r. upadhyaya, j. batley and d. edwards, "image‐based crop disease detection using machine learning", plant pathology, vol. 74, no. 1, pp. 18–38, jan. 2025. [32] t.k. dey, j. pradhan, d.a. khan, "optimized potato leaf disease detection with an enhanced convolutional neural network", iete journal of research, pp. 1–4, mar. 2025. [33] s.a. alzakari, a.a. alhussan, a.s. qenawy, a.m. elshewey and m. ed, "an enhanced long short-term memory recurrent neural network deep learning model for potato price prediction", potato research, , pp. 1–9, jun. 2024. [34] h. zhu, w, shi, x. guo, s. lyu, r. yang and z. han, "potato disease detection and prevention using multimodal ai and large language model", computers and electronics in agriculture, vol. 229, p. 109824, feb. 2025. [35] k. joshi, s. hooda, a. sharma, h. sonah, r. deshmukh, n. tuteja, s.s. gill and r. gill, "precision diagnosis of tomato diseases for sustainable agriculture through deep learning approach with hybrid data augmentation", current plant biology, vol. 41, p. 100437, mar. 2025. [36] walid a, hasan m, roy t, hossain ms, sultana n, "deep learning-based potato leaf disease detection using cnn in the agricultural system", international journal of engineering and manufacturing, vol. 13, no. 6, pp. 9–22, dec. 2023. [37] aldhyani th, alkahtani h, eunice rj, hemanth dj, "leaf pathology detection in potato and pepper bell plant using convolutional neural networks", in proceedings of the ieee 7th international conference on communication and electronics systems (icces), jun. 2022, pp. 1289–1294. 256 p. bagchi, b. sawicka, z. stamenkovic, p. barbaś, p. pszczółkowski… [38] sinshaw nt, assefa bg, mohapatra sk, "transfer learning and data augmentation-based cnn model for potato late blight disease detection", in proceedings of the ieee international conference on information and communication technology for development for africa (ict4da), nov. 2021, pp. 30–35. [39] mocek a. gleboznawstwo. państwowe wydawnictwo naukowe, warszawa, 2015, 571 ss. (in polish). [40] s. roztropowicz, z. czerko, a. głuska, w. goliszewski, t. gruczek, b. lis, b. lutomirska, w. nowacki, k. rykaczewska, g. sowa-niedziałkowska, m. szutkowska, a. wierzejska-bujakowska, zarzyńska k. "metodyka obserwacji, pomiarów i pobierania prób w agrotechnicznych doświadczeniach z ziemniakiem", red. s. roztropowicz. wyd. ihar, jadwisin, (in polish). [41] b. bhatt, s.k. gupta, s. mukherjee and r. kumar, "a comprehensive review on biochar against plant pathogens: current state-of-the-art and future research perspectives", heliyon, 2024. [42] t. lenartowicz, "list descriptive list of potato varieties", bujak h. (ed.), coboru, słupia wielka, poland. issn 1641-7003, pp. 38, 2022, (in polish). [43] w. lipiński, "ocean zasobności gleb polski w mikroelementy", zesz. nauk. ar wrocław, 2016, 621, pp. 49–58, 2016, (in polish). [44] j.b. pietkiewicz, "metodyka oceny porażenia części nadziemnych ziemniaka przez zarazę (phytophthora infestans)", biul. inst. ziemniaka, vol. 32, pp. 51–62, 1985, (in polish). [45] sas, i. i., 2008, sas/stat®9.2. users guide. [46] j. koronacki, j. mielniczuk, "statystyka dla studentów kierunków rolniczych. wydawnictwo naukowotechniczne", warszawa, 2006. ss 491, ibsn: 978-83-204-3253-1. (in polish). [47] van der plank j. e., "plant disease: epidemics and control", academic press, 1963, new york: 345 ss. [48] i. k. abule, j. s. lynott, j. g. hansen, d. e. l. cooke and a. k. lees, "the eu43 genotype of phytophthora infestans displays resistance to mandipropamide", plant pathology, 2023, vol. 72, pp. 1313– 3305, https://doi.org/10.1111/ppa.13737 [49] a kaur, e. mullins, s. kildea, "detection of resistance in phytophthora infestans to the carboxylic acid amide (caa) fungicides using digital droplet pcr", biorxiv preprint. january 13, 2025. [50] m. ludwiczak, m. janiszewska and z. yin, "populations of phytophthora infestans in northern and eastern europe", eury j plant patho, vol. 171, pp. 81–95, 2025. [51] b. kowalczyk and j. lewandowski, "comparison of disease resistance among potato varieties grown under different cultivation systems", plant disease, vol. 104, no. 7, pp. 1856–1864, 2020. [52] j. r. lamichhane, "integrated pest management systems for sustainable agriculture: a comprehensive review", agricultural systems, vol. 172, pp. 65–81, 2018. [53] r. nowak, p. kowalski and m. zielińska, "impact of integrated and ecological farming systems on the spread of potato late blight", journal of plant protection research, vol. 58, no. 3, pp. 245–252, 2018. [54] m.j. shankhin, j.c. zadok’s, "phytophthora infestans 10-year truce with holland: a long-term analysis of potato late-blight epidemics in the netherlands", plant pathology, 2001, vol. 51, no. 4, pp. 413–423, 2001. [55] d. green, "varietal resistance of potato to phytophthora infestans under ecological and conventional farming conditions", european journal of agronomy, vol. 124, pp. 126–135, 2021. [56] y. zarrouk, m. anduze, m. garri, m. bouchareb rahmoune and k. hicham, "revolutionizing potato late blight surveil-lance: uav-driven object detection innovations", j. theoretic. appl. inform. technol, vol. 102, no. 7, pp. 2934–2943, 2024. [57] s. anusuya, "integration of iot and ai for potato leaf disease detection: enhancing agricultural efficiently and sustainability", in emerging trends and applications of deep learning for biomedical data analysis, 2025, pp. 25–47, academic press. [58] a. dolata adian, t.x. neil, m.f. danilovic, s.r. upadhyaya, j. batley, d. edwards, "image‐based crop disease detection using machine learning", plant pathology, vol. 74, no.11, pp. 18–38, jan. 2025. [59] z. chi, h. chen, s. chang, z.l. li, l. ma, t. hu, k. xu, z. zhao, "large-scale monitoring of potatoes late blight using multi-source time-series data and google earth engine", remote sensing, vol. 17, no. 6, p. 978, mar. 2025. [60] s.a. al zakari, a.a. alhassan, a.s. qena wy, a.m. elsheery, "early detection of potato disease using an enhanced convolutional neural network-long short-term memory deep learning model", potato research, pp. 1–9, jul. 2024. [61] t.k. dey, j. pradhan, d.a. khan, "optimized potato leaf disease detection with an enhanced convolutional neural network", iete journal of research, pp. 1–4, mar. 2025. [62] h. zhu, w. shi, x. guo, s. lyu, r. yang, z. han, "potato disease detection and prevention using multimodal ai and large language model", computers and electronics in agriculture, vol. 229, p. 109824, feb. 2025. [63] s.m. dong and s.q. zhou, "potato late blight caused by phytophthora infestans: from molecular interactions to integrated management strategies", journal of integrative agriculture, vol. 21, no. 12, 2022. [64] r. garcia and l. martinez, "the role of agroecological practices in managing late blight in ecological potato farming", frontiers in plant science, vol. 10, p. 984, 2019. facta universitatis series: electronics and energetics using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines martin lukac1, michitaka kameyama2, marek perkowski3 and pawel kerntopf4 1nazarbayev university, astana, kazakhstan 2ishinomaki senshu university, ishinomaki, japan 3portland state university, portland, oregon, usa 4university of lodz, lodz poland abstract: a digital device is called reversible if it realizes a reversible mapping, i.e., the one for which there exist a unique inverse. the field of reversible computing is devoted to studying all aspects of using and designing reversible devices. during last 15 years this field has been developing very intensively due to its applications in quantum computing, nanotechnology and reducing power consumption of digital devices. we present an analysis of the reversible finite state machines (rfsm) with respect to three well known sequences used in the testability analysis of the classical finite state machines (fsm). the homing, distinguishing and synchronizing sequences are applied to two types of reversible fsms: the converging fsm (crfsm) and the nonconverging fsm (ncrfsm) and the effect is studied and analyzed. we show that while only certain classical fsms possess all three sequences, crfsms and ncrfsms have properties allowing to directly determine what type of sequences these machines possess. keywords: reversible logic, finite state machines, testing 1 introduction one of the problems when designing sequential logic is the ability to efficiently generate tests, apply them to the circuit under test and design an easily testable circuit (design for test dft). in classical finite state machines (fsms) this issue manuscript received corresponding author: 1 facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 417 438 https://doi.org/10.2298/fuee1903417l martin lukac1, michitaka kameyama2, marek perkowski3, pawel kerntopf4 received august 28, 2018; received in revised form april 23, 2019 corresponding author: martin lukac 53 kabanbay batyr ave, block 7, office 7237, nur-sultan city, republic of kazakhstan, 010000 (e-mail: martin.lukac@nu.edu.kz) facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications tomislav suligoj1, marko koričić1, josip žilak1, hidenori mochizuki2, so-ichi morita2, katsumi shinomura2, hisaya imai2 1university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 9, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines 1nazarbayev university, astana, kazakhstan 2ishinomaki senshu university, ishinomaki, japan 3portland state university, portland, oregon, usa 4university of lodz, lodz poland abstract. a digital device is called reversible if it realizes a reversible mapping, i.e., the one for which there exist a unique inverse. the field of reversible computing is devoted to studying all aspects of using and designing reversible devices. during last 15 years this field has been developing very intensively due to its applications in quantum computing, nanotechnology and reducing power consumption of digital devices. we present an analysis of the reversible finite state machines (rfsm) with respect to three well known sequences used in the testability analysis of the classical finite state machines (fsm). the homing, distinguishing and synchronizing sequences are applied to two types of reversible fsms: the converging fsm (crfsm) and the non-converging fsm (ncrfsm) and the effect is studied and analyzed. we show that while only certain classical fsms possess all three sequences, crfsms and ncrf-sms have properties allowing to directly determine what type of sequences these ma-chines possess. key words: reversible logic, finite state machines, testing 2 is well studied and various techniques exist to determine fsm’s testability [1–11]. among the desired characteristics of a testable fsm is the identification of an unknown current state and the ability to bring the fsm to a known state. these properties are verified by the homing, synchronizing and distinguishing input sequences. using these sequences it is possible to establish whether a classical fsm • possesses a transition path from the initial to the final state, • possesses a transition path from any state to any another state and • allows by only observing the machine’s output sequence, to reach an arbitrary state from a different arbitrary state. the motivation for the construction of automata possessing a particular set of sequences can be appreciated by observing the advantages of each of the sequences separately. the homing sequences have been successfully used in hardware fault detection [12] and in machine learning [13, 14]. the synchronizing sequence has been successfully used in various designs where the existence of the synchronizing sequence allows to simplify the circuit implementation and testing. finally, the distinguishing sequence is used to build a checking sequence used to verify if an implementation of an fsm is consistent with its specification [2, 10]. consequently, an fsm that possesses the desired sequences would be highly testable and thus both practical in industrial applications and useful for theoretical research. the general area of sequential reversible circuits and automata has been explored several traditional approaches. in [15,16], optimized d and jk latches have been proposed. in [17] proposed to build reversible components for sequential circuits based on toffoli reversible gates and in [18] the elements of sequential reversible circuits were implemented using conservative fredkin logic gates. in [19] the reversible t-flip-flop was proposed to be built using custom gates. in [20] the authors proposed to build a memory cell from two toffoli gates in standard cmos. in [21] a reversible double-edge triggered flip-flop was build on fpga. testable sequential devices based on quantum cellular automata have been explored in [22, 23]. reversible sequential circuits have also been designed in multiple-valued logic such as in [24]. in the construction of reversible fsms (rfsms), the reversible computation imposes the reversibility constraints and thus limits the construction [25, 26]. this makes the rfsms harder to construct and more expensive because ancilla bits and additional logic are required to preserve or achieve the reversibility [27–30]. consequently, applying methods based on the established classical fsms to rfsms, can determine if the established classical fsms methods are sufficient, 418 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 419 2 is well studied and various techniques exist to determine fsm’s testability [1–11]. among the desired characteristics of a testable fsm is the identification of an unknown current state and the ability to bring the fsm to a known state. these properties are verified by the homing, synchronizing and distinguishing input sequences. using these sequences it is possible to establish whether a classical fsm • possesses a transition path from the initial to the final state, • possesses a transition path from any state to any another state and • allows by only observing the machine’s output sequence, to reach an arbitrary state from a different arbitrary state. the motivation for the construction of automata possessing a particular set of sequences can be appreciated by observing the advantages of each of the sequences separately. the homing sequences have been successfully used in hardware fault detection [12] and in machine learning [13, 14]. the synchronizing sequence has been successfully used in various designs where the existence of the synchronizing sequence allows to simplify the circuit implementation and testing. finally, the distinguishing sequence is used to build a checking sequence used to verify if an implementation of an fsm is consistent with its specification [2, 10]. consequently, an fsm that possesses the desired sequences would be highly testable and thus both practical in industrial applications and useful for theoretical research. the general area of sequential reversible circuits and automata has been explored several traditional approaches. in [15,16], optimized d and jk latches have been proposed. in [17] proposed to build reversible components for sequential circuits based on toffoli reversible gates and in [18] the elements of sequential reversible circuits were implemented using conservative fredkin logic gates. in [19] the reversible t-flip-flop was proposed to be built using custom gates. in [20] the authors proposed to build a memory cell from two toffoli gates in standard cmos. in [21] a reversible double-edge triggered flip-flop was build on fpga. testable sequential devices based on quantum cellular automata have been explored in [22, 23]. reversible sequential circuits have also been designed in multiple-valued logic such as in [24]. in the construction of reversible fsms (rfsms), the reversible computation imposes the reversibility constraints and thus limits the construction [25, 26]. this makes the rfsms harder to construct and more expensive because ancilla bits and additional logic are required to preserve or achieve the reversibility [27–30]. consequently, applying methods based on the established classical fsms to rfsms, can determine if the established classical fsms methods are sufficient, 3 need to be improved or if unique new methods must be designed when dealing with the reversible computational paradigm. rfsms have been studied for their properties of universality [25] and furthermore extensive studies have been conducted in the area of reversible cellular automata (rca) [31–35]. an rca can be seen as a rfsms with spatial constraints. an rca maps input states to next states using local rules. a local rule is a function of k spatially closest inputs that is repeatedly applied to all n inputs. while rca have been studied for their effective implementation and powerful computation abilities [36] no study on the testability of rca has been done. similarly, up to now there have been no serious efforts to explore the general testability of rfsms from the point of view of the well established testing techniques such as those used in testing of classical irreversible fsms. specifically, the impact of the three above introduced sequences has not been studied at all for rfsms and for the fsms embedded in rfsms. some studies into testability have been performed from the classical point of view such as in [37]. in this paper the constraints of the reversible-permutative and unitary matrices used to specify fsms are studied with respect to the three above introduced sequences. we assume that an rfsm is specified by a permutation matrix and our analysis is limited to such permutative and discrete rfsms. we apply the three types of sequences to rfsms and determine their power when used on reversible sequential devices. the main contributions of this paper are: 1. the analysis of the homing, synchronizing and distinguishing sequences for rfsms, 2. criteria for rfsms in order to have the homing, distinguishing, or synchronizing sequences. the paper is organized as follows. first, background on the classical and reversible fsms is given in section 2. section 3 describes and defines the terms and concepts necessary for the understanding of the three considered sequences and section 4 shows the application and analysis of the sequences related to both the converging and non-converging finite state machines crfsms/ncrfsms. section 5 concludes the paper by summarizing our results. 2 background let a and b be finite non-empty sets. definition 1 (balanced logic function). a function f : a → b is balanced if 418 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 419 4 for every value b ∈ b there is the same number of combinations of input variable values in its domain a. definition 2 (reversible logic function). a function f : a → b is reversible if it is one-to-one and onto. in other words, f(xa) = f(xb) =⇒ xa = xb and f(x) = y for x ∈ x and y ∈ y . table 1: example of (a) an irreversible logic function f , (b) a reversible logic function fr. ab a’b’ 00 01 01 11 10 00 11 11 f (a) ab a’b’ 00 00 01 11 10 01 11 10 fr (b) table 1a shows example of an irreversible logic function and table 1b an example of a reversible function. definition 3 (permutative matrix). a permutative matrix for n input variables, is a sparse matrix with binary coefficients performing a reversible function f : bn → bn. reversible functions in this paper will be represented by truth tables and permutative matrices. table 1a and 1b show examples of irreversible and reversible functions respectively. the corresponding matrices are shown in eq. (1) and (2).     0 0 1 0 1 0 0 0 0 0 0 0 0 1 0 1     (1)     1 0 0 0 0 0 1 0 0 0 0 1 0 1 0 0     (2) definition 4 (indexing variable). the indexing variable of a block diagonal matrix is the input variable that allows to separate a block diagonal matrix to independent reversible matrices. definition 5 (reversible logic gate). a reversible logic gate (or circuit) on nvariables realizes a n× n reversible function f : i → o. 420 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 421 4 for every value b ∈ b there is the same number of combinations of input variable values in its domain a. definition 2 (reversible logic function). a function f : a → b is reversible if it is one-to-one and onto. in other words, f(xa) = f(xb) =⇒ xa = xb and f(x) = y for x ∈ x and y ∈ y . table 1: example of (a) an irreversible logic function f , (b) a reversible logic function fr. ab a’b’ 00 01 01 11 10 00 11 11 f (a) ab a’b’ 00 00 01 11 10 01 11 10 fr (b) table 1a shows example of an irreversible logic function and table 1b an example of a reversible function. definition 3 (permutative matrix). a permutative matrix for n input variables, is a sparse matrix with binary coefficients performing a reversible function f : bn → bn. reversible functions in this paper will be represented by truth tables and permutative matrices. table 1a and 1b show examples of irreversible and reversible functions respectively. the corresponding matrices are shown in eq. (1) and (2).     0 0 1 0 1 0 0 0 0 0 0 0 0 1 0 1     (1)     1 0 0 0 0 0 1 0 0 0 0 1 0 1 0 0     (2) definition 4 (indexing variable). the indexing variable of a block diagonal matrix is the input variable that allows to separate a block diagonal matrix to independent reversible matrices. definition 5 (reversible logic gate). a reversible logic gate (or circuit) on nvariables realizes a n× n reversible function f : i → o. 5 definition 6 (controlled reversible logic gate). a k-controlled reversible logic gate on k + 1 variables performs a logic function on target variable ik+1 while leaving all control variables i1, . . . , ik unchanged such that fk+1(i1, . . . , ik, ik+1) = { 1⊕ ik+1 if for all j = 1, . . . , k, ij = 1 ik+1 otherwise (3) that is, it realizes a one variable balanced function on a target variable if all k control variables have value 1. a k-controlled reversible logic gate on k + 1 variables uses k control variables and one target variable such that k variables remain unchanged after the application of the reversible logic gate on the target variable ik+1. definition 7 (positive and negative control). a positive (negative) control is a variable i that must be 1 (0) in order to activate the function on target variable. 1 2 a b f1 = a⊕b f0 = b fig. 1: example of realization of a reversible function reversible circuits are built from reversible gates. for instance, consider the realization of an reversible function shown in figure 1. gates 1 and 2 are both two variable gates, called cnot. a cnot gate is a single variable positive controlled not gate implementing the function f = a⊕b. observe gate labelled 1 in circuit from figure 1: the control variable a controls the not operation on variable b. the cnot gate labelled 2, applies the not gate on variable a and is controlled by b. therefore the cnot gate 1 in figure 1 implements function f1 = a ⊕ b and cnot gate 2 implements f0 = a⊕b ⊕a = b. definition 8 (finite state machine). a finite state machine (fsm) is a sequential device defined by a septuple m = (i,o, s, si, sf , f,g) where i is the input alphabet (a finite, non-empty ordered set of input symbols), o is the output alphabet (a finite, non-empty ordered set of output symbols), s is a finite, non-empty ordered set of states, si ⊂ s is the set of initial states, sf ⊂ s is the set of final states, f is the next state function given by the mapping f : i × s → s′ and g is the output function given by the mapping g : i × s → o. 420 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 421 6 table 2: example of an irreversible fsm s i 0 1 a b/0 a/1 b a/0 d/0 c a/1 d/1 d c/0 b/1 table 2 shows an example of an fsm. in table 2 first column shows in every row one possible current state of the fsm. the second and third columns show the the next sate and output assignments for input values i = 0 and i = 1 respectively. definition 9 (reversible finite state machine (rfsm)). a rfsm is a state machine m = (i,o, s, si, sf , f,g) with state transition function f : i × s → s′ and output function g : i × s → o are balanced logic functions and such that i × s → o × s′ is a reversible function. in this paper we will distinguish two types of rfsms: the convergent rfsm (crfsm) and its special case the non-convergent rfsm (ncrfsm). the difference is in the fact that for any ncrfsm and for a given input value, every next state assignment is unique. this difference is illustrated in table 3; table 3(a) shows an ncrfsm and 3(b) and crfsm in the so called reversible specification table. table 3: example of (a) non-converging λn and (b) converging λc specifications. s i 0 1 a d/1 a/1 b a/0 c/1 c c/0 d/0 d b/1 b/0 s i 0 1 a d/1 c/0 b a/0 c/1 c a/1 d/0 d b/1 b/0 (a) (b) definition 10 (ncrfsm evolution). the input-state-output mapping λn (f×g) : i × s → s′ × o. the evolution function λn is a bijection with constraint that when i is used as input variable(s), each output state occurs once at most: ∀i ∈ i, ∀s ∈ s, f (i, s) �= f (i, s′). example of a ncrfsm is shown in table 3(a). 422 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 423 6 table 2: example of an irreversible fsm s i 0 1 a b/0 a/1 b a/0 d/0 c a/1 d/1 d c/0 b/1 table 2 shows an example of an fsm. in table 2 first column shows in every row one possible current state of the fsm. the second and third columns show the the next sate and output assignments for input values i = 0 and i = 1 respectively. definition 9 (reversible finite state machine (rfsm)). a rfsm is a state machine m = (i,o, s, si, sf , f,g) with state transition function f : i × s → s′ and output function g : i × s → o are balanced logic functions and such that i × s → o × s′ is a reversible function. in this paper we will distinguish two types of rfsms: the convergent rfsm (crfsm) and its special case the non-convergent rfsm (ncrfsm). the difference is in the fact that for any ncrfsm and for a given input value, every next state assignment is unique. this difference is illustrated in table 3; table 3(a) shows an ncrfsm and 3(b) and crfsm in the so called reversible specification table. table 3: example of (a) non-converging λn and (b) converging λc specifications. s i 0 1 a d/1 a/1 b a/0 c/1 c c/0 d/0 d b/1 b/0 s i 0 1 a d/1 c/0 b a/0 c/1 c a/1 d/0 d b/1 b/0 (a) (b) definition 10 (ncrfsm evolution). the input-state-output mapping λn (f×g) : i × s → s′ × o. the evolution function λn is a bijection with constraint that when i is used as input variable(s), each output state occurs once at most: ∀i ∈ i, ∀s ∈ s, f (i, s) �= f (i, s′). example of a ncrfsm is shown in table 3(a). 7 definition 11 (crfsm evolution). the input-state-output mapping λc(f ×g) : i × s → s′ ×o. the evolution function λc is a bijection with the only constraint being that each pair {s′, o} occurs only once in λc . example of crfsm is shown in table 3(b). in this paper the reference rfsm will be used to address any of the crfsm/ncrfsm unless specifically indicated. note two major differences between the definition of the rfsm and fsm: 1. a rfsm must preserve reversibility 2. it has to be specified for all the combinations of the input-state {i, s} values 3. all state-outputs {s′o} combinations must occur only once in the reversible specification table. definition 12 (state-output set θ). given a rfsm mr, the state-output set θ is the set of all combinations of s ∈ s and o ∈ o. the size of θ is |s| ∗ |o|, with element indices i = 1, . . . , |s| ∗ |o|. let k = 0, . . . , |s|−1 and j = 0, . . . , |o|−1 then the indices of elements in θ are calculated as i = k + |o| ∗ j. definition 13 (don’t care). the don’t care ∗ is used to represent unknown or unconsidered values of states, output or input values. in the analysis of an rfsm the input sequence uncertainty is used to describe the knowledge about the current state of the rfsm. to understand the concept of input sequence uncertainty, first the concepts of partition and cover need to be defined and explained. the following concepts are adapted to the crfsms and ncrfsms from the original ones defined in [11]. definition 14 (ordered state partition). given a crfsm/ncrfsm m , the ordered state partition π of states s of m , is a collection of disjoint subsets of states whose set union is s and an ordering ≺i−1,i. the order ≺i of states s ∈ πi is given by the order ≺i−1 of s ∈ πi−1 of the direct predecessor state. let the crfsm from table 3(a), π1 = {a/∗, b/∗, c/∗, d/∗} and i = 0 then the ordered partition is π2 = {d/1, a/0, c/0, b/1}. using this notation it can be easily determined that the predecessor to b/1 was the state d. note that the original definition of state partition [38] breaks the states into groups such that each group contains states with same output. in the definition 14 these groups are broken visually but still exists if grouped by variable values. thus an unordered partition π2 = (ac)(bd). 422 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 423 8 definition 15 (ordered state cover). an ordered cover is a collection φ of subsets of states s (with their associated outputs o) whose union is s, such that no subset is contained in another subset in the collection [11]. additionally, the order of states in the cover is given ≺i−1,i. let the crfsm from table 3(b), π = {a/∗, b/∗, c/∗, d/∗} and i = 0 then the ordered cover is φ = {d/1, a/0, a/1, b/1}. using this notation it can be easily determined that the predecessor to b/1 was the state d/∗. definition 16 (ordered input sequence uncertainty). the uncertainty ∆(x) of an input sequence x = x1, . . . , xk of an rfsm is a cover φ of s where two distinct states f (xt, sh) = si and f (xt, sj) = sk are ordered according to ≺i−1,i. the input sequence uncertainty is highest when the machine is in an unknown state given by π = {a/∗, b/∗, c/∗, d/∗, }; all states are indistinguishable by their outputs. the lowest uncertainty is either when the cover of machine states is a singleton state or when each group of states is a singleton state such as π = {a/0, c/1}. the uncertainty of input sequence can be complemented by the amount of information computed from various states present in the block. definition 17 (information content of uncertainty). information content of uncertainty is given by e(φ) = − ∑ i pilog(pi) where the pi coefficient represents the multiplicity of the state si in the cover φ of the states resulting from an input value. for instance e({a/∗, b/∗, c/∗, d/∗}) = − ∑ 4 0.25 ∗ log(0.25) = 1.3863 and e({d/∗, a/∗, a/∗, a/∗}) = −(0.25 ∗ log(0.25) + ∑ 3 0.75 ∗ log(0.75)) = 0.9939. the difference between the information content and the uncertainty is: the uncertainty ∆(x) of input sequence x represents the partition/cover of states given their observable outputs and the information content e(φ) is given by the mixture of individual unique states (or states/output combinations) present in the partition or cover. for instance the lowest uncertainty ∆(x) = 0 represents the fact that each output represents one unique state, independently of how many such states are in the block. the lowest possible information content e(φ) = 0 is such ordered partition that contains exactly one state (i.e., {a/∗, a/∗, a/∗, a/∗}) let mr be a rfsm (definition 9) and x = x1, . . . , xj , s = s1, . . . , sj and o = o1, . . . , oj be an input, state and output sequences, correspondingly, each of them of length j. 424 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 425 8 definition 15 (ordered state cover). an ordered cover is a collection φ of subsets of states s (with their associated outputs o) whose union is s, such that no subset is contained in another subset in the collection [11]. additionally, the order of states in the cover is given ≺i−1,i. let the crfsm from table 3(b), π = {a/∗, b/∗, c/∗, d/∗} and i = 0 then the ordered cover is φ = {d/1, a/0, a/1, b/1}. using this notation it can be easily determined that the predecessor to b/1 was the state d/∗. definition 16 (ordered input sequence uncertainty). the uncertainty ∆(x) of an input sequence x = x1, . . . , xk of an rfsm is a cover φ of s where two distinct states f (xt, sh) = si and f (xt, sj) = sk are ordered according to ≺i−1,i. the input sequence uncertainty is highest when the machine is in an unknown state given by π = {a/∗, b/∗, c/∗, d/∗, }; all states are indistinguishable by their outputs. the lowest uncertainty is either when the cover of machine states is a singleton state or when each group of states is a singleton state such as π = {a/0, c/1}. the uncertainty of input sequence can be complemented by the amount of information computed from various states present in the block. definition 17 (information content of uncertainty). information content of uncertainty is given by e(φ) = − ∑ i pilog(pi) where the pi coefficient represents the multiplicity of the state si in the cover φ of the states resulting from an input value. for instance e({a/∗, b/∗, c/∗, d/∗}) = − ∑ 4 0.25 ∗ log(0.25) = 1.3863 and e({d/∗, a/∗, a/∗, a/∗}) = −(0.25 ∗ log(0.25) + ∑ 3 0.75 ∗ log(0.75)) = 0.9939. the difference between the information content and the uncertainty is: the uncertainty ∆(x) of input sequence x represents the partition/cover of states given their observable outputs and the information content e(φ) is given by the mixture of individual unique states (or states/output combinations) present in the partition or cover. for instance the lowest uncertainty ∆(x) = 0 represents the fact that each output represents one unique state, independently of how many such states are in the block. the lowest possible information content e(φ) = 0 is such ordered partition that contains exactly one state (i.e., {a/∗, a/∗, a/∗, a/∗}) let mr be a rfsm (definition 9) and x = x1, . . . , xj , s = s1, . . . , sj and o = o1, . . . , oj be an input, state and output sequences, correspondingly, each of them of length j. 9 definition 18 (transition cycle). a transition cycle τj = so|x, is the sequence of length j of elements of state-output so ∈ θ combinations obtained as a result of applying the sequence x to a machine mr in some initial state θ1 = s1 and such that the fr(x1s1) = fr(xj , sj). the transition cycle defines the shortest sequence of input values x that would starting from arbitrary initial state si and ending in the same state si. definition 19 (maximal transition cycle). if the transition cycle τi reaches all available states in s, then the transition cycle is called maximal and is denoted τmax. for instance, the machine from table 3(b) starting from is = 0/a has τ4 = d/1b/1c/1a/1|0010. note that τ4 is also a maximal transition cycle and thus for mr, τ4 = τmax. theorem 1. any rfsm that does not possess τmax must have p transition cycles such that ∪p l=1 τl = θ and ∑p l=1 |τl| = |s| and ∩p l=1 τl = ∅. proof. every rfsm is specified by a set of unique mappings {i, s} → {s′, o}. additionally the evolution operator λc is a one-to-one bijection and thus every single {s′, o} ∈ θ can be reached from exactly one distinct {i, s}. this implies that each state can be reached from at maximum |i| different cycles. therefore, any existing {s′, o} is accessed by at maximum one existing cycle in λc . consequently, at maximum there are |o × s × i|/2 independent cycles. the content of each transition cycle implies that ∑p l=1 |τl| = |s| and ∩p l=1 τl = ∅. definition 20 (reversible successor tree (rst)). a reversible successor tree is a rooted dag rst = {v,e} where: (1) each edge e corresponds to a transition between two states given an input i value, and (2) node v represents a block of states with the associated output [11]. the rst of the fsm shown in table 3(a) is shown in figure 2. notice that unlike in classical successor tree [11], the rst preserves the order of the states between two successor nodes as shown in figure 2. for instance, at node 0 the state cover is φ = {a/∗, b/∗, c/∗, d/∗} because it represents the current state, no output was yet generated and therefore the machine could be in any possible state. for the input value of 0, node 1 transforms the changed ordered cover φ = {d/1, a/0, c/0, b/1}. thus a state with output at jth position in a parent node will generate the state with output at the jth position in every child node. definition 21 (impulse response (ir)). impulse response of a machine m is the vector of output values vi = {ois1 , . . . , o i sn} for all possible states sj |sj ∈ s generated to an input value xi. 424 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 425 10 10 0 1 4 5 8 0 1 2 0 0 1 3 6 7 {a/∗, b/∗, c/∗, d/∗} 1 {a/1, c/1, d/0, b/0} {a/1, d/0, b/0, c/1} {d/1, c/0, b/1, a/0} {d/1, a/0, c/0, b/1} {b/1, d/1, c/0, a/0} {b/0, a/1, d/0, c/1} {a/0, d/1, b/1, c/0} {c/1, a/1, b/0, d/0} fig. 2: partially expanded successor tree of the ncrfsm defined in table 3(a) definition 22 (response sequence (rs)). for a crfsm/ncrfsm m starting from a state si and an input sequence x = x1, . . . , xn, the sequence of irs vxi = {ox1 si , . . . , o xn si } of obtained output values is called response sequence (rs). definition 23 (machine signature). combining ir and rs of a machine m into a matrix which columns are labeled by output values given a state os/o and rows by input values from sequence x = x1, . . . , xn results in the so called machine signature ms. example of machine signature ms of crfsm from table 3(b) obtained as a result of the input sequence x = 00101 is shown in table 4. columns in table 4 represent, the index of the input variables, the input variable, the next state and output, and the impulse response respectively. for instance, in second row, k = 0 indicating the input variable is x0 = 0. the third column indicates that given the state and output a/∗, the next state output is d/1. the outputs generated for input x0 are all gathered in v0 = 1011. table 4: response matrix of the crfsm from table 3(b) k x oa/∗ ob/∗ oc/∗ od/∗ ms 0 x0 = 0 d/1 a/0 a/1 b/1 v0 = 1011 1 x1 = 0 b/1 d/1 d/1 a/0 v1 = 1110 2 x2 = 1 c/1 b/0 b/0 c/0 v2 = 1000 3 x3 = 0 a/1 a/0 a/0 a/1 v3 = 1001 4 x4 = 1 c/0 c/0 c/0 c/0 v4 = 0000 426 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 427 10 10 0 1 4 5 8 0 1 2 0 0 1 3 6 7 {a/∗, b/∗, c/∗, d/∗} 1 {a/1, c/1, d/0, b/0} {a/1, d/0, b/0, c/1} {d/1, c/0, b/1, a/0} {d/1, a/0, c/0, b/1} {b/1, d/1, c/0, a/0} {b/0, a/1, d/0, c/1} {a/0, d/1, b/1, c/0} {c/1, a/1, b/0, d/0} fig. 2: partially expanded successor tree of the ncrfsm defined in table 3(a) definition 22 (response sequence (rs)). for a crfsm/ncrfsm m starting from a state si and an input sequence x = x1, . . . , xn, the sequence of irs vxi = {ox1 si , . . . , o xn si } of obtained output values is called response sequence (rs). definition 23 (machine signature). combining ir and rs of a machine m into a matrix which columns are labeled by output values given a state os/o and rows by input values from sequence x = x1, . . . , xn results in the so called machine signature ms. example of machine signature ms of crfsm from table 3(b) obtained as a result of the input sequence x = 00101 is shown in table 4. columns in table 4 represent, the index of the input variables, the input variable, the next state and output, and the impulse response respectively. for instance, in second row, k = 0 indicating the input variable is x0 = 0. the third column indicates that given the state and output a/∗, the next state output is d/1. the outputs generated for input x0 are all gathered in v0 = 1011. table 4: response matrix of the crfsm from table 3(b) k x oa/∗ ob/∗ oc/∗ od/∗ ms 0 x0 = 0 d/1 a/0 a/1 b/1 v0 = 1011 1 x1 = 0 b/1 d/1 d/1 a/0 v1 = 1110 2 x2 = 1 c/1 b/0 b/0 c/0 v2 = 1000 3 x3 = 0 a/1 a/0 a/0 a/1 v3 = 1001 4 x4 = 1 c/0 c/0 c/0 c/0 v4 = 0000 11 3 sequences for the analysis of fsms in this section we present adapted definitions of testing sequences originally introduced for irreversible fsms [38] to the models of ncrfsm and crfsm introduced in this paper. 0 1 2 10 0 1 0 5 6 43 7 8 0 1 (a/∗, b/∗, c/∗, d/∗} 1 {c/0, c/1, d/0, b/0} b/0, c/1} {d/0, d/0, b/1, a/0} {b/1, d/1, d/1, a/0} {b/0, c/0, c/0, c/1} d/0, d/0} {c/1, d/0, {d/1, a/0, a/1, b/1} {a/0, a/1, a/1, a/1} {a/1, a/1, fig. 3: partially expanded successor tree of the crfsm defined in table 3(b) 3.1 homing sequence definition 24 (homing sequence). a homing sequence is a sequence of inputs x that independently on the initial state si and by observing the output sequence o allows to bring the machine to a distinct final state sf . we look to figure 2 for homing sequence. starting from the initial cover φ (node 0) the input sequence 01 leads to b, a, d and c for o = 10, o = 01, o = 00 and o = 11 respectively. to obtain a homing sequence, start from the top node with index 0 and expand the node into successor nodes by analyzing the state change from each state in the current node for input value 1 and 0. the expansion stops when each state is a singleton or if all states in a node are the same. 3.2 distinguishing sequence definition 25 (distinguishing sequence). a sequence x of inputs that creates a unique sequence of outputs o starting from any unknown initial state sj of the state machine. such output sequence permits to determine the unknown initial state of the machine. 426 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 427 12 let’s again use the successor tree from fig. 2. the sequence x = 01 shows that for each of the possible current state a unique output sequence is be generated. starting from node 0, the output sequences o = 10, o = 01, o = 00, and o = 11 for the initial states a, b, c and d respectively. 3.3 synchronizing sequence definition 26 (synchronizing sequence). the sequence x of inputs to create a path from any initial state si to the same specific final state sf independently of the output sequence o. the synchronizing sequence is in fact a more powerful type of the homing sequence and thus if a sequence is synchronizing it is also a homing sequence. let’s consider the successor tree from figure 3. similarly to the homing sequence, starting from the root node (with index 0) and sequentially feeding the state machine a sequence of input values the machine will end up in the same state. for instance, the input sequence 010 leads the machine through the nodes 1, 4, and 5 and in node 5 all states are a/0. thus independently of the output and of the initial state, the machine will be end up in the state a. 4 analyzing reversible finite state machines crfsms and ncrfsms used here are all reduced and thus do not contain any compatible states. consequently, most of trivial models of state devices are not discussed. 4.1 ncrfsm o s′1 s′0s1 s0 i fig. 4: circuit realization of the ncrfsm defined in table 3(a). for the analysis of the ncrfsm we use the ncrfsm from table 3(a) that has the rst shown in figure 2. figure 4 shows one possible realization of the 428 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 429 12 let’s again use the successor tree from fig. 2. the sequence x = 01 shows that for each of the possible current state a unique output sequence is be generated. starting from node 0, the output sequences o = 10, o = 01, o = 00, and o = 11 for the initial states a, b, c and d respectively. 3.3 synchronizing sequence definition 26 (synchronizing sequence). the sequence x of inputs to create a path from any initial state si to the same specific final state sf independently of the output sequence o. the synchronizing sequence is in fact a more powerful type of the homing sequence and thus if a sequence is synchronizing it is also a homing sequence. let’s consider the successor tree from figure 3. similarly to the homing sequence, starting from the root node (with index 0) and sequentially feeding the state machine a sequence of input values the machine will end up in the same state. for instance, the input sequence 010 leads the machine through the nodes 1, 4, and 5 and in node 5 all states are a/0. thus independently of the output and of the initial state, the machine will be end up in the state a. 4 analyzing reversible finite state machines crfsms and ncrfsms used here are all reduced and thus do not contain any compatible states. consequently, most of trivial models of state devices are not discussed. 4.1 ncrfsm o s′1 s′0s1 s0 i fig. 4: circuit realization of the ncrfsm defined in table 3(a). for the analysis of the ncrfsm we use the ncrfsm from table 3(a) that has the rst shown in figure 2. figure 4 shows one possible realization of the 13 ncrfsm defined by table 3(a) using the encoding of the states a = (s0 = 0, s1 = 0), b = (s0 = 0, s1 = 1), c = (s0 = 1, s1 = 0) and d = (s0 = 1, s1 = 1). table 5: encoding of the ncrfsm from table 3(a) s i 0 1 s0 s1 s0 s1 o s0 s1 o 0 0 1 1 1 0 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 1 1 0 1 1 0 1 0 table 5 shows the individual bits for nest state and output assignments. table 5 allows us to generate a set of equations describing the individual variable assignment: s′0 = s̄1 ⊕ is̄0 = s̄1 ⊕ is̄′1 (4) s′1 = s0 ⊕ īs̄1 (5) o = s̄0 ⊕ īs1 = i⊕ s′1 (6) however because we are dealing with reversible circuits, we cannot simply assign, but rather we have to use the equations 4∼6 to change one of the state, input or ancilla bit variables. here we decide to use the following variable mapping: i → o, s0 → s′1 and s1 → s′0 and we use one ancilla bit. the permutative matrix representing λn of the ncrfsm from table 3(a) is shown in eq. (7). the variables indicated at the top of the matrix are the input i , the state s and the output o variable respectively. λn =             0/a 0/b 0/c 0/d 1/a 1/b 1/c 1/d a/0 0 1 0 0 0 0 0 0 b/0 0 0 0 0 0 0 0 1 c/0 0 0 1 0 0 0 0 0 d/0 0 0 0 0 0 0 1 0 a/1 0 0 0 0 1 0 0 0 b/1 0 0 0 1 0 0 0 0 c/1 0 0 0 0 0 1 0 0 d/1 1 0 0 0 0 0 0 0             (7) lemma 1. an function λn does not changes the information content of the input uncertainty in an ncrfsm. 428 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 429 14 proof. the information content of the input uncertainty ∆(x) is changed only when for a given input value xj the number of distinct successor states is increased or decreased with respect to the number of distinct states in the predecessor state partition. the evolution function λn ≡ f × g (definition 10) preserves for each input value i the number of unique states. therefore, starting from an initial partition π = {s1/i1, . . . , s1/ik, . . . , sn/i1, . . . , sn/ik} each vertex of the successor tree will lead to a partition that contains exactly the same states permuted according to function λn . consequently, there is no input sequence that would modify the information content e(φ) in state partitions of the successor tree of an ncrfsm. for instance, observe that every node in the rst shown in figure 2 contains all states in every node of the tree. theorem 2. an ncrfsm always possesses a homing sequence. proof. the assignment of states and output values for each input using λn means that all states of the ncrfsm appear at every node of the successor tree (lemma 1). additionally, λn for an altering sequence of input values such as 0, 1, 0, etc. at every node all available states will be having output 1 or 0. finally, ncrfsm always contains a τmax: there exists at least one sequence of inputs that will traverse the τmax and thus generating a unique sequence for each initial state and consequently identifying the final state distinctively. theorem 3. an ncrfsm always possesses a distinguishing sequence. proof. this is a direct consequence of theorem 2. ncrfsm can always identify a final state by a unique output sequence. λn is specified by a reversible matrix and λn is a bijection. starting from an arbitrary final state with an associated sequence of outputs will lead backward to a unique and distinctive initial state. the successor tree shown in figure 2 shows that one of the available homing sequences for this machine is 10, with output sequences o = 11, o = 10, o = 01 and o = 00, the resulting states are d, c, b and a respectively. the distinguishing sequence can be directly seen in the tree from figure 2 because the input sequence 11 generates unique output sequences and thus confirms theorems 2 and 3 (for the outputs refer to the state-output mapping shown in table 3(b)). theorem 4. an ncrfsm cannot possess a synchronizing sequence proof. this is a natural consequence of lemma 1: if an ncrfsm generates a balanced distribution of states and outputs and does not modify the information 430 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 431 14 proof. the information content of the input uncertainty ∆(x) is changed only when for a given input value xj the number of distinct successor states is increased or decreased with respect to the number of distinct states in the predecessor state partition. the evolution function λn ≡ f × g (definition 10) preserves for each input value i the number of unique states. therefore, starting from an initial partition π = {s1/i1, . . . , s1/ik, . . . , sn/i1, . . . , sn/ik} each vertex of the successor tree will lead to a partition that contains exactly the same states permuted according to function λn . consequently, there is no input sequence that would modify the information content e(φ) in state partitions of the successor tree of an ncrfsm. for instance, observe that every node in the rst shown in figure 2 contains all states in every node of the tree. theorem 2. an ncrfsm always possesses a homing sequence. proof. the assignment of states and output values for each input using λn means that all states of the ncrfsm appear at every node of the successor tree (lemma 1). additionally, λn for an altering sequence of input values such as 0, 1, 0, etc. at every node all available states will be having output 1 or 0. finally, ncrfsm always contains a τmax: there exists at least one sequence of inputs that will traverse the τmax and thus generating a unique sequence for each initial state and consequently identifying the final state distinctively. theorem 3. an ncrfsm always possesses a distinguishing sequence. proof. this is a direct consequence of theorem 2. ncrfsm can always identify a final state by a unique output sequence. λn is specified by a reversible matrix and λn is a bijection. starting from an arbitrary final state with an associated sequence of outputs will lead backward to a unique and distinctive initial state. the successor tree shown in figure 2 shows that one of the available homing sequences for this machine is 10, with output sequences o = 11, o = 10, o = 01 and o = 00, the resulting states are d, c, b and a respectively. the distinguishing sequence can be directly seen in the tree from figure 2 because the input sequence 11 generates unique output sequences and thus confirms theorems 2 and 3 (for the outputs refer to the state-output mapping shown in table 3(b)). theorem 4. an ncrfsm cannot possess a synchronizing sequence proof. this is a natural consequence of lemma 1: if an ncrfsm generates a balanced distribution of states and outputs and does not modify the information 15 content of input sequence uncertainty, it cannot converge to a single unique state. 4.2 crfsm now that we showed properties of the special case of the reversible ncrfsm, we extend these results to the general model of crfsm. the crfsm is a relaxed type of ncrfsm and can be obtained from ncrfsm by simply changing output states between different columns of the state transition function specified in a statetransition table. for instance the table 3(b) shows a state transition function of a crfsm that is obtained by changing the state assignment from the table 3(a). the matrix corresponding λc to table 3(b) is shown in eq. (8). λc =             0/a 0/b 0/c 0/d 1/a 1/b 1/c 1/d a/0 0 1 0 0 0 0 0 0 b/0 0 0 0 0 0 0 0 1 c/0 0 0 0 0 1 0 0 0 d/0 0 0 0 0 0 0 1 0 a/1 0 0 1 0 0 0 0 0 b/1 0 0 0 1 0 0 0 0 c/1 0 0 0 0 0 1 0 0 d/1 1 0 0 0 0 0 0 0             (8) for illustration the circuit realizing the crfsm from table 3(b) is shown in figure 5. the encoding used for this realization is the same as in the case of the ncrfsm shown in figure 4, which is a = 0 and b = 1. for the analysis of the o s′0 s′1s0 s1 i fig. 5: compact circuit realization of the crfsm defined in table 3(b). crfsm we use the crfsm from table 3(a) that has the rst shown in figure 2. figure 4 shows one possible realization of the crfsm defined by table 3(a) using the encoding of the states a = (s0 = 0, s1 = 0), b = (s0 = 0, s1 = 1), c = (s0 = 1, s1 = 0) and d = (s0 = 1, s1 = 1). again table 6 shows the individual bits encoding. from table 6 we can 430 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 431 16 table 6: encoding of the crfsm from table 3(b) s i 0 1 s0 s1 s0 s1 o s0 s1 o 0 0 1 1 1 1 0 0 0 1 0 0 0 1 0 1 1 0 0 0 1 1 1 0 1 1 0 1 1 0 1 0 generate a set of equations describing the individual variable assignment: s′0 = is̄0 ⊕ is̄1 ⊕ s̄0s̄1 = s1 ⊕ s′1 ⊕ ōs̄′1 (9) s′1 = s0 ⊕ īs̄1 (10) o = ī⊕ s0s̄1 = ī⊕ s1s̄2 (11) lemma 2. let λc be defined by a reversible matrix (definition 2), then λc reduces the information content of input uncertainty in an crfsm. proof. a crfsm defined by reversible λc with the only restriction that for at least one ijsk combination of the input and state values, the λc(ijsk) results in snop such that sk = sn. this implies that for each step resulting by the application of λc , at least one state will be assigned twice. this has for consequence that information content e(φ) reduces (definition 17). theorem 5. a crfsm always possesses a homing sequence proof. the crfsm specified by λc is not guaranteed to possess τmax and multiple cycles τj may exist. because λc is reversible and λc reduces the information content, there is at least one input sequence x that leads to either a single final state (due to information reduction in the input uncertainty) or to a partition φ with distinct output sequences (due to reversibility of λc). before proceeding to the next step we introduce two sub-categories of crfsms: non-restricting crfms (nrcrfsm) and restricting crfsm (rcrfsm). consider the two crfsms shown in table 7. the nrcrfsm from table 7(a) is an example of machine that reduces the information content of the state partition. that is for a particular input value the e(πj) ≤ e(πj+1). the rcrfsm from table 7(b) is also a crfsm because it reduces the information content of the initial unknown partition only once and then e(pij) = e(pij+1). note that the rcrfsm from table 7(b) is halfway between a crfsm and ncrfsm: ncrfsm 432 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 433 16 table 6: encoding of the crfsm from table 3(b) s i 0 1 s0 s1 s0 s1 o s0 s1 o 0 0 1 1 1 1 0 0 0 1 0 0 0 1 0 1 1 0 0 0 1 1 1 0 1 1 0 1 1 0 1 0 generate a set of equations describing the individual variable assignment: s′0 = is̄0 ⊕ is̄1 ⊕ s̄0s̄1 = s1 ⊕ s′1 ⊕ ōs̄′1 (9) s′1 = s0 ⊕ īs̄1 (10) o = ī⊕ s0s̄1 = ī⊕ s1s̄2 (11) lemma 2. let λc be defined by a reversible matrix (definition 2), then λc reduces the information content of input uncertainty in an crfsm. proof. a crfsm defined by reversible λc with the only restriction that for at least one ijsk combination of the input and state values, the λc(ijsk) results in snop such that sk = sn. this implies that for each step resulting by the application of λc , at least one state will be assigned twice. this has for consequence that information content e(φ) reduces (definition 17). theorem 5. a crfsm always possesses a homing sequence proof. the crfsm specified by λc is not guaranteed to possess τmax and multiple cycles τj may exist. because λc is reversible and λc reduces the information content, there is at least one input sequence x that leads to either a single final state (due to information reduction in the input uncertainty) or to a partition φ with distinct output sequences (due to reversibility of λc). before proceeding to the next step we introduce two sub-categories of crfsms: non-restricting crfms (nrcrfsm) and restricting crfsm (rcrfsm). consider the two crfsms shown in table 7. the nrcrfsm from table 7(a) is an example of machine that reduces the information content of the state partition. that is for a particular input value the e(πj) ≤ e(πj+1). the rcrfsm from table 7(b) is also a crfsm because it reduces the information content of the initial unknown partition only once and then e(pij) = e(pij+1). note that the rcrfsm from table 7(b) is halfway between a crfsm and ncrfsm: ncrfsm 17 table 7: example of (a) the nrcrfsm and (b) the rcrfsm s i 0 1 a a/1 d/0 b c/0 b/0 c c/1 a/0 d b/1 d/1 s i 0 1 a a/1 d/0 b a/0 b/0 c c/0 b/1 d c/1 d/1 (a) (b) does not reduces e(πi) while rcrfsm reduces only e(π0) and then it behaves as ncrfsm. lemma 3. a crfsm always possess a distinguishing sequence. proof. the proof is separated into two special cases: 1. if the crfsm does not reduce the input sequence uncertainty information content then it is a ncrfsm. 2. if the crfsm is rcrfsm, then once it reduced e(π0) is behaves like ncrfsm and therefore will also posses the distinguishing sequence 3. if the crfsm is nrcrfsm, it reduces the input sequence uncertainty information. in order not to have a distinguishing sequence, for at least two initial states a and b any response sequences vxa and vxb must be exactly the same given any input sequence x. this is only possible (a) if two states lead to a same successor state in which case it is not an rfsm, (b) if vxa = vxb for different state sequences sa and sb and for any input sequence x in such case the crfsm is not properly reduced as it will contain redundant states. table 8: example of the distinguishing sequence of the crfsm from table 3(b) x a/∗ b/∗ c/∗ d/∗ vk 1 c/0 c/1 d/0 b/0 vk = 0100 0 a/1 a/1 b/1 a/0 vk = 1110 0 d/1 d/1 a/0 d/1 vk = 1101 1 b/0 b/0 c/0 b/0 vk = 0000 432 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 433 18 lemma 4. for a function λc defined by a permutative matrix (definition 2) that reduces the information content of input uncertainty for τj (nrcrfsm), there is at least one specific input sequence xred that leads to a single final state sf in τj . proof. in order to prove lemma 4 it is enough to show that starting from an arbitrary cover φ there is a sequence xred that reduces the information content of the input sequence. in order to prove this, we assume that all states sj ∈ π can be reached within τj and λc must either reduce or preserve the information content of π. then the proof is shown using the following steps: 1. let π = {τ0, . . . , τj} be the initial ordered partition π and the initial input sequence uncertainty. 2. let ij ∈ i be such that λc reduces the information content of the input sequence uncertainty by performing mapping mr : π ij −→ φ. this means ∃so, sp ∈ φ|so = sp (two states are equal in φ after applying λc with ij to π). 3. for any two states sj �= sk ∈ φ there must be a sequence of inputs xred,j,k = {i0, . . . , ir} such that λc(ir, sj , ∗) = λc(ij , sk, ∗). theorem 6. a rfsm possesses a synchronizing sequence if it reduces the information content of uncertainty and possesses maximal sequence τmax. proof. if an rfsm with evolution function λc reduces the information of the input uncertainty, it can with finite sequence reach a common final state (lemma 4). additionally if the machine mr contains τmax this common final state is reachable from arbitrary initial state: if a crfsm does not have τmax then there are at least two smaller τj cycles (theorem 1) that under any input sequence will end up in at least two different states. if a crfsm is rcrfsm it can still have τmax but it will never converge to a single state. table 10(a) and 10(b) show an example of two rfsms without and with synchronizing sequences respectively. note that one can observe the existence of the synchronizing sequence very quickly. the crfsm from table 10(a) is an rcrfsm and thus from an initial partition π1 = {a,b,c,d,e, f} it reduces the partition information content to − ∑ 6 i=1 1 3 log(1 3 ). then any next step will preserve the information content the same. therefore, the rcrfsm cannot have a synchronizing sequence. 434 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 435 18 lemma 4. for a function λc defined by a permutative matrix (definition 2) that reduces the information content of input uncertainty for τj (nrcrfsm), there is at least one specific input sequence xred that leads to a single final state sf in τj . proof. in order to prove lemma 4 it is enough to show that starting from an arbitrary cover φ there is a sequence xred that reduces the information content of the input sequence. in order to prove this, we assume that all states sj ∈ π can be reached within τj and λc must either reduce or preserve the information content of π. then the proof is shown using the following steps: 1. let π = {τ0, . . . , τj} be the initial ordered partition π and the initial input sequence uncertainty. 2. let ij ∈ i be such that λc reduces the information content of the input sequence uncertainty by performing mapping mr : π ij −→ φ. this means ∃so, sp ∈ φ|so = sp (two states are equal in φ after applying λc with ij to π). 3. for any two states sj �= sk ∈ φ there must be a sequence of inputs xred,j,k = {i0, . . . , ir} such that λc(ir, sj , ∗) = λc(ij , sk, ∗). theorem 6. a rfsm possesses a synchronizing sequence if it reduces the information content of uncertainty and possesses maximal sequence τmax. proof. if an rfsm with evolution function λc reduces the information of the input uncertainty, it can with finite sequence reach a common final state (lemma 4). additionally if the machine mr contains τmax this common final state is reachable from arbitrary initial state: if a crfsm does not have τmax then there are at least two smaller τj cycles (theorem 1) that under any input sequence will end up in at least two different states. if a crfsm is rcrfsm it can still have τmax but it will never converge to a single state. table 10(a) and 10(b) show an example of two rfsms without and with synchronizing sequences respectively. note that one can observe the existence of the synchronizing sequence very quickly. the crfsm from table 10(a) is an rcrfsm and thus from an initial partition π1 = {a,b,c,d,e, f} it reduces the partition information content to − ∑ 6 i=1 1 3 log(1 3 ). then any next step will preserve the information content the same. therefore, the rcrfsm cannot have a synchronizing sequence. 19 table 9: example of (a) rcrfsm without synchronizing and (b) nrcrfsm with a synchronizing sequence 001011 leading to a single state b. s i 0 1 a a/0 e/1 b f/0 b/1 c c/1 d/1 d a/1 d/0 e c/0 e/0 f f/1 b/0 s i 0 1 a a/0 f/1 b f/0 c/0 c d/1 b/0 d e/0 c/1 e d/0 e/1 f a/1 b/1 (a) (b) crfsm from table 10(b) has a duplicate state in both columns; for i = 0 {a}, {f} and {c}, {e} lead to same state a and d respectively. for i = 1 {b}, {d} and {c}, {f} provide the information content reduction necessary for possessing a synchronizing sequence (theorem 6). table 10: example of a synchronizing input sequence in crfsm from table 3(b). notice that every column ends with the same state and thus shows the existence of the synchronizing sequence 1101. x a/∗ b/∗ c/∗ d/∗ 1 c c d b 1 d d b c 0 b b a a 1 c c c c conjecture 1. if a crfsm possesses a distinguishing (synchronizing) sequence that contains all possible input values it cannot at the same time possess the synchronizing (distinguishing) sequence as well. proof. if an crfsm possesses a distinguishing sequence it means that in each column of the rst there exists only unique combinations of s × o. if that would not be the case, some of the columns in the rst of the rfsm would be reducing the input uncertainty. this also means that there exist at least two output sequences that have identical outputs and thus a distinguishing sequence cannot exist. however, if the distinguishing sequence exists, it means that each column does not reduce the state uncertainty and each element of s × o is present only once in each column. in such a case the rfsm cannot have the synchronizing sequence. 434 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 435 20 5 conclusions in this paper we presented an analysis of the reversible finite state machines and proved a set of exact results concerning rfsms being tested using the three testing sequences. we proved that because of the reversible requirement the ncrfsms cannot have the synchronizing sequence but have a homing and distinguishing sequences. we also proved that the crfsm allows to have all three sequences but at a cost of longer input sequences and we formulated precise conditions under which an crfsm can have all three studied sequences. the obtained results show that there is a hierarchy of testability between the ncrfsm and crfsm and the used methods can be used to study other fsm. in the future works, we extend this work into a complete method for transforming irreversible fsm to rfsm and give exact cost of ancilla bits required to have rfsm with all sequences. references [1] e. f. moore, “gedanken-experiments on sequential machines,” vol. 34, pp. 129–153. [2] a. gill, introduction to the theory of finite-state machines. new york: mcgrawhillq. [3] f. hennie, “fault detecting experiments for sequential circuits,” in in proceedings of the fifth annual symposium on switching circuit theory and logical design, pp. 95–110. [4] i. kohavi and z. z. kohavi, “variable-length distinguishing sequences and their application to the design of fault-detection experiments,” vol. c-17, pp. 792–795. [5] a. d. friedman and p. r. menon, fault detection in digital circuits. englewood cliffs, nj: prentice-hall, inc. [6] e. p. hsieh, “checking experiments for sequential machines,” vol. c-20, no. 10, pp. 1152–1166. [7] m. n. sokolovskii, “diagnostic experiments with automata,” vol. 6, pp. 44–49. [8] s. m. gobershtein, “check words for the states of a finite automaton,” vol. 1, pp. 46–49. [9] m. chen, y. choi, and a. kershenbaum, “approaches utilizing segment overlap to minimize test sequences,” in in proceedings of the 10th international symposium on protocol specification, testing and verification, pp. 67–84. [10] t.-f. lee, a. c.-h. wu, and y.-l. lin, “a transformation-based method for loop folding,” vol. 13, no. 4, pp. 439–. [11] z. kohavi and n. jha, switching and finite automata theory, 3rd edition. cambridge university press. 436 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 437 20 5 conclusions in this paper we presented an analysis of the reversible finite state machines and proved a set of exact results concerning rfsms being tested using the three testing sequences. we proved that because of the reversible requirement the ncrfsms cannot have the synchronizing sequence but have a homing and distinguishing sequences. we also proved that the crfsm allows to have all three sequences but at a cost of longer input sequences and we formulated precise conditions under which an crfsm can have all three studied sequences. the obtained results show that there is a hierarchy of testability between the ncrfsm and crfsm and the used methods can be used to study other fsm. in the future works, we extend this work into a complete method for transforming irreversible fsm to rfsm and give exact cost of ancilla bits required to have rfsm with all sequences. references [1] e. f. moore, “gedanken-experiments on sequential machines,” vol. 34, pp. 129–153. [2] a. gill, introduction to the theory of finite-state machines. new york: mcgrawhillq. [3] f. hennie, “fault detecting experiments for sequential circuits,” in in proceedings of the fifth annual symposium on switching circuit theory and logical design, pp. 95–110. [4] i. kohavi and z. z. kohavi, “variable-length distinguishing sequences and their application to the design of fault-detection experiments,” vol. c-17, pp. 792–795. [5] a. d. friedman and p. r. menon, fault detection in digital circuits. englewood cliffs, nj: prentice-hall, inc. [6] e. p. hsieh, “checking experiments for sequential machines,” vol. c-20, no. 10, pp. 1152–1166. [7] m. n. sokolovskii, “diagnostic experiments with automata,” vol. 6, pp. 44–49. [8] s. m. gobershtein, “check words for the states of a finite automaton,” vol. 1, pp. 46–49. [9] m. chen, y. choi, and a. kershenbaum, “approaches utilizing segment overlap to minimize test sequences,” in in proceedings of the 10th international symposium on protocol specification, testing and verification, pp. 67–84. [10] t.-f. lee, a. c.-h. wu, and y.-l. lin, “a transformation-based method for loop folding,” vol. 13, no. 4, pp. 439–. [11] z. kohavi and n. jha, switching and finite automata theory, 3rd edition. cambridge university press. 21 [12] i. pomeranz and s. reddy, “application of homing sequences to synchronous sequential circuit testing,” in test symposium, 1993., proceedings of the second asian, pp. 324–329. [13] r. l. rivest and r. e. schapire, “inference of finite automata using homing sequences,” in proceedings of the twenty-first annual acm symposium on theory of computing, ser. stoc ’89. new york, ny, usa: acm, pp. 411–420. [14] y. freund and r. schapire, “a decision-theoretic generalization of on-line learning and an application to boosting,” vol. 55, no. 1, pp. 119 – 139. [online]. available: http://www.sciencedirect.com/science/article/pii/s002200009791504x [15] m.-l. chuang and c.-y. wang, “synthesis of reversible sequential elements *,” pp. 420–425. [16] m. ueda, “optimization of reversible sequential circuits,” vol. 2, no. 6, pp. 208–214, 2010. [17] v. k. siva kumar sastry hari, shyam shroff, sk. noor mahammad and e. group, “efficient building blocks for reversible sequential circuit design,” in 49th ieee international midwest symposium on circuits and systems, 2006, pp. 437–441. [18] s. dhaarinee and n. rajeswaran, “implementation of reversible sequential circuits using conservative logic gates,” vol. 3, no. 5, pp. 500–505, 2014. [19] d. s. shubham gupta, vishal pareek, “low cost design of sequential reversible counters,” international journal of scientific & engineering research,, vol. 4, no. 11, pp. 1234–1240, 2013. [20] m. lukac, m. perkowski, and m. kameyama, “quantum finite state machines a circuit based approach,” international journal of unconvetional computing, vol. 9, no. 3-4, pp. 267–301. [21] v. singh and a. sharma, “implementation of sequential circuit using reversible fredkin gate on fpga,” international research journal of engineering and technology (irjet), vol. 03, no. 08, pp. 1873–1878, 2016. [22] h. thapliyal, s. member, and n. ranganathan, “design of testable reversible sequential circuits,” vol. 21, no. 7, pp. 1201–1209, 2013. [23] n. kumar, s. wairya, and b. sen, “design of conservative , reversible sequential logic for cost efficient emerging nano circuits with enhanced testability,” ain shams engineering journal, 2017. [online]. available: http://dx.doi.org/10.1016/j.asej.2017.02.005 [24] m. mohammadi, m. eshghi, and m. haghparast, “on design of multiple-valued sequential reversible circuits for nanotechnology based systems,” in tencon, 2008, pp. 1–6. [25] j. pin, “on the languages accepted by finite reversible automata,” in automata, languages and programming, ser. lecture notes in computer science, t. ottmann, ed. springer berlin heidelberg, vol. 267, pp. 237–249. [26] j.-e. pin, “on reversible automata,” in latin ’92, ser. lecture notes in computer science, i. simon, ed. springer berlin heidelberg, vol. 583, pp. 401–416. 436 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... 437 22 [27] r. ali, m. gooding, t. szilagyi, b. vojnovic, m. christlieb, and m. brady, “automatic segmentation of adherent biological cell boundaries and nuclei from brightfield microscopy images,” vol. 23, no. 4, pp. 607–621, 2011. [28] m. soeken, r. wille, c. otterstedt, and r. drechsler, “a synthesis flow for sequential reversible circuits,” in 2012 ieee 42nd international symposium on multiplevalued logic, may 2012, pp. 299–304. [29] m. h. a. khan, “design of reversible synchronous sequential circuits using pseudo reed-muller expressions,” ieee transactions on very large scale integration (vlsi) systems, vol. 22, no. 11, pp. 2278–2286, nov 2014. [30] s. gupta, “synthesis of sequential reversible circuits through finite state machine,” corr, vol. abs/1410.2, 2014. [online]. available: http://arxiv.org/abs/1410.2370 [31] n. margolus, “physics-like models of computation,” vol. 10, no. 1-2, pp. 81 – 95. [online]. available: http://www.sciencedirect.com/science/article/pii/0167278984902525 [32] g. y. vichniac, “simulating physics with cellular automata,” vol. 10, no. 112, pp. 96 – 116. [online]. available: http://www.sciencedirect.com/science/article/pii/0167278984902537 [33] k. morita, handbook of natural computing. springer berlin heilderberg, ch. reversible cellular automata, pp. 231–257. [34] ——, “reversible computing and cellular automata a review,” vol. 395, pp. 101–131. [35] ——, “reversible computing systems, logic circuits and cellular automata,” in proceedings of the 3rd international conference on networking and computing, pp. 1–8. [36] s. wolfram, a new kind of science. wolfram media inc. [37] b. anuradha and s. sivakumar, “a fault analysis in reversible sequential circuits,” iosr journal of vlsi and signal processing, vol. 4, no. 2, pp. 36–42, 2014. [38] z. kohavi, switching and finite automata theory. mc graw-hill. 438 m. lukac, m. kameyama, m. perkowski, p. kerntopf using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines... pb instruction facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 571 584 doi: 10.2298/fuee1504571j qrs complex detection based ecg signal artefact discrimination  borisav jovanović 1 , vančo litovski 1 , milan pavlović 2 1 university of niš, the faculty of electronic engineering, niš, serbia 2 university of niš, the faculty of medicine, niš, serbia abstract. a new algorithm dedicated to electrocardiograph telemetry devices is proposed which evaluates the quality of electrocardiogram signals acquired in unsupervised environments, raises the certainty of the produced diagnoses, and accelerates protective actions when necessary. the proposed algorithm is utilized in conditions when electrocardiogram signals are highly susceptible to artefacts. the algorithm is based on novel qrs detection method and is used in microprocessor-based telemetry devices with reduced computing power. the algorithm has been tuned on publicly available databases. the results of its exploitation are also presented. key words: ecg telemetry systems, ecg recordings quality 1. introduction the quality of electrocardiogram (ecg) data influences the diagnosis results [1, 2]. the same stands for data acquired by ecg telemetry devices [3]. the potential limitation of using telemetry devices is measurement artefact immunity and their ability to measure discernible qrs and p waveforms in the presence of noise [4]. the very notion that the patient executes measurement without supervision often has a detrimental impact on the quality of the acquired data, even though the patient will receive training in how to use the device [4]. the ecg telemetry device itself should be able to distinguish ecg signals from artefacts. moreover, the device has to work autonomously and transmit data to doctors when a cardiac disorder happens. one approach fulfilling these requirements is proposed in this paper. it is our intention to emphasize a novel method for ecg signal quality assessment which is applied in the design of an ecg telemetry device. it prevents the transmission of ecg data with insufficient signal quality and also enhances detection of various cardiac disorders. the algorithm is tuned on publicly available ecg recording database [5] and validated on clinical ecg data. received september 15, 2014; received in revised form january 13, 2015 corresponding author: borisav jovanović university of niš, the faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: borisav.jovanovic@elfak.ni.ac.rs) 572 b. jovanović,v. litovski, m. pavlović 2. related work the ecg signals acquired by ecg devices are not immune to noise contamination. techniques used for noise elimination are numerous [6], [7], [8]. the technique proposed in [6] is considered to be inappropriate for implementation in telemetry devices, because it requires multiple ecg leads for noise discrimination. specifically, the structure of commercial telemetry devices is simplified. in order to be wearable, many devices measure only single ecg lead. the other technique proposed in [7] finds the locations of qrs complex and other ecg signal waves to perform an adaptive signal filtering. the technique proposed in [8] uses a light-emitting-diode-based sensor to measure the amount of skin stretching, and based on sensor outputs, performs the filtering process. when ecg signals are contaminated by large artefacts filtering methods are not sufficiently successful in recovering the underlying ecg signals. for example, the body movement related artefacts are observed in the frequency range of the electrocardiogram, and often have similar shapes as qrs complexes. therefore, the signal and noise components cannot be easily discerned [9]. the signal to noise ratio cannot be either calculated for ecg signals because the signal components interpreted as ecg signal in one application may be interpreted as noise in the other applications [9]. additionally, as a consequence of aging, the amplitude of r wave can be decreased down to noise levels. instead of suppressing artefacts it is preferable to quantify the quality of an ecg signal. the assessment of signal quality is not completely solved, especially when focusing on telemetry devices with limited processing power [9]. some approaches use additional devices to identify the sections of ecg signal having artefacts. for example, the work in [10] proposes an accelerometer sensor for movement detection. the other methods rely exclusively on ecg recordings. the paper [11] presents a method which reduces the number of false alarms in coronary care units. the method for noise assessment presented in [12] requires two ecg leads. first, the algorithm calculates the locations of the qrs complexes in signal, and after using neural networks, determines whether the signal is a qrs complex or an artefact. in the algorithm described in [13], the researchers estimate the level of deviation of the suspected qrs complex compared to averaged qrs complex. recently, several algorithms dedicated to smart phone platforms are proposed. such method [14] is based on [13] and focuses on the assessment of ecg signal quality when the signal is measured in the unsupervised environments. after applying a filter to remove gross movement artefact, the signal quality is estimated in the remaining ecg signal [14]. the qrs complex detection is a basic step in almost every ecg analysis procedure. the performance of subsequent ecg analyses strongly depends on the robustness of the qrs detection [15]. therefore, ecg quality assessment based on qrs detection seems to be a practical approach that is suitable for most subsequent ecg analysis algorithms [9] and therefore has been adopted also here. the qrs detectors have been thoroughly studied and many methods have been proposed. the qrs detection method is first described by nygards and sornmo [16] and is subsequently updated by pan and tompkins method [17]. an open-source code [18] has been taken as a starting point for a new method for identification of qrs waves, proposed in this paper. this algorithm is a modification of pan and tompkins method [17]; uses adaptive thresholds and has a scan-back procedure which looks back in time if no beats have been detected during a certain period. qrscomplex detection based ecg signal artefact discrimination 573 3. the operation of telemetry devices the telemetry devices have emerged as a technology with a great promise for identifying cardiac disorders that are not easily discernible by other ecg diagnostic devices. compared to other ecg recorders, the ecg telemetry devices have the following advantages in:  using wireless communications for instantaneous reporting of cardiac disorders  having longer recording periods, long enough to capture the arrhythmic episodes and pauses in heart rhythm  having very small size in order to reduce the obtrusiveness of the recording process [4] a novel algorithm for ecg signal quality assessment has been implemented in an ecg telemetry device. the device uses five conductive electrodes (fig. 1). the arm electrodes (r and l) are placed on spots near right and left shoulders (fig. 1). the leg electrodes (f and n) are placed on abdomen bottom side in the legs direction. one additional precordial electrode [19] is placed at one of anatomically referenced landmarks on the anterior chest (v1–v6) given in fig. 1. the precordial landmark v5 is mostly utilized since it provides best sensitivity for myocardial ischemia disease detection [1]. the following standard leads are acquired: i, ii, iii, avr, avl, avf and one precordial the lead v5. fig. 1 the data processing chain in an ecg telemetry device the processing blocks of an ecg telemetry device are depicted in fig. 1. the device receives analog ecg signals from electrodes through conductive patient cables. a brief description of similar amplifier circuits operating in electrocardiograph dedicated to stress testing is given in [20], [21]. the analog signals are converted into digital at data rate of 500 samples per second, and then processed by digital filters. after the filtering operation has been completed, the rr (r wave to r wave) intervals representing the time periods between two consecutive r waves are calculated for the detection of following cardiac disorders:  tachycardia (disorders having high heart-rate rhythm) [22],  bradycardia (low heart-rate rhythm heart condition),  pauses (abnormal delays between qrs waves),  arrhythmia (irregular changes in heart-rate rhythm) [23]. the algorithm for ecg signal noise level estimation which is implemented within a telemetry device determines if an ecg recording has acceptable quality for data transmission. the noise level estimation algorithm, in conjunction with qrs complex detection method, will be described in following sections in detail. 574 b. jovanović,v. litovski, m. pavlović 4. the algorithm for peak detection and noise level estimation 4.1. qrs detection algorithm the digital samples of ecg signal are processed at sampling frequency of 250 samples per second. the operations dedicated to heart beat detection and noise level estimation can be divided into following groups:  ecg signal pre-processing,  peak detection,  noise level estimation,  qrs waves detection the brief description of ecg pre-processing block operations is given in figure 2. the pre-processing block starts with band-pass filtering. two finite impulse response (fir) filters are used:  the low-pass with cut-off frequency of 15hz  high-pass with cut-off frequency 1hz. fig. 2 qrs wave detection operations the absolute value of the signal's first derivative is calculated and the outcome signal is processed by moving the averaging filter. the average value of the input signal is found over a 96ms timing window. the duration of 96 ms is chosen after a thorough analysis was performed using ecg data from database [5]. we initially used the longer interval of 150 ms, which is used in [17]. then, we had to change the value to 96ms because we found that 96ms timing window enables better detection of qrs complexes when ventricular tachycardia is present in an ecg signal. as a result of pre-processing operations each qrs complex produces a knoll at the output of moving the average block. the output is denoted with x[n] in figure 2. the peak detection and noise level estimation blocks (figure 2.) are novel and will be described in the following sections in detail. the block denoted as qrs detection rules in fig. 2 is taken from [18]. the block classifies the peaks found by peak detection block (fig. 2.) as qrs complexes or noise, using peak height, location (relative to last found qrs complex) and adaptive thresholds. if peak is greater than threshold, it is considered as r wave, otherwise it is called noise. besides, all peaks that precede or follow larger peaks by less than time period of 200ms are discarded. the outcome of detection rules block can be used further for beat classification such as detection of arrhythmias. qrscomplex detection based ecg signal artefact discrimination 575 4.2. peak detection algorithm the output signal of pre-processing block, the digital signal x[n], enters the next peak detection block, at data rate of 250 samples per second. the examples of ecg signal ecg[n] and corresponding x[n] are depicted on the top and the middle panels of figure 3 respectively. as one can see from fig. 3, the qrs complexes in ecg[n] produce knolls in signal x[n]. also, the knolls produced by p and t waves are considerably smaller than those created by r waves, and therefore can be successfully distinguished. the peak detection algorithm generates at its output two different signals:  peak[n] which is used by qrs detection rules block for the identification of r waves. peak[n] is presented on the top panel of fig.3.  pulse[n] which is used by noise level estimation block for artefact detection and is presented on the middle panel of fig. 3. fig. 3 set of signals illustrating the peak detection and noise estimation algorithm. the top panel presents signals ecg[n] and peak[n], the middle panel x[n], oldmin[n], oldmax[n], ave[n] and pulse[n], the bottom panel signal state[n]. the algorithm for peak detection uses adaptive thresholds which are adjusted depending on the local minimum and maximum values of signal x[n]. the local minimum and maximum values are named with oldmin and oldmax respectively. the variables oldmin, oldmax are presented in fig. 3 on the middle panel. the oldmax is the most distinct value within the signal x[n], calculated during the last rr interval (fig. 3). the oldmin represents the minimum value of x[n] found in the same interval. the algorithm calculates additional variable ave (given in fig. 3 on middle panel), which represents the approximation of the mean value of signal x[n]. 576 b. jovanović,v. litovski, m. pavlović the operation of the peak detection algorithm can be described by a finite state machine (fsm) which is comprised of three states denoted as s0, s1 and s2. the state transition diagram of fsm is illustrated in figure 4. in the example of an ecg signal depicted in the figure 3, the fsm states are included on the bottom panel by signal state. fig. 4 the finite state machine states for peak detection a qrs complex is recognized (the pulse is generated on the signal peak[n]) when a state transitions s1->s2 occurs (fig. 4). during the isoelectric time interval of an ecg signal [1] which is positioned before the qrs complex, the fsm resides in state s0. the state is changed from s0 to s1 (fig. 4) when the rising edge of signal x[n] is detected. this transition is possible when the condition, given by eq. (1), is met. ((( [ ] [ 4]) ) (( [ 4] [ 8]) )) ( [ ] )x n x n x n x n x n d           (1) the condition given by eq. (1) consists of two parts. the first part calculates the slope of the rising edge of the signal x[n] and checks if it is greater than constant value δ. the δ is determined as the slope of signal x[n], produced by an input ecg signal ecg[n] having the lowest slew rate. the lowest slew rate for an ecg is estimated by dividing the minimum r peak amplitude within the range of 0.5mv to 5mv and dividing it by maximum rise time of the qr interval within the range of 17.5 ms to 52.5 ms. [24] this gives a minimum slew rate of 0.5mv/52.5ms=0.0095v/s. the second part of eq. (1) checks whether the amplitude of x[n] exceeds the threshold d. note that r peaks should be greater than 0.15mv for a qrs detection. the threshold value d is defined as a function of variables ave, oldmin, oldmax and time interval measured after the qrs complex has been detected as described in table 1. motivated by physiological standpoint, the time interval after the qrs complex has been detected is referred to as refractory period. the refractory period is greater than 280ms [1] and consists of absolute and relative refractory periods. the interval measured from the beginning of the qrs complex to the apex of the t wave is referred to as the absolute refractory period. the last half of the t wave is referred to as the relative refractory period. the absolute refractory interval is started when fsm state is changed from s2 to s0 and it lasts for 200ms. during this period, the d value is set to the maximum value. the absolute refractory period is followed by a relative refractory period lasting at least for 80 ms, within which the next qrs complex is more possible to happen. the d value, used during the relative refractory period, is determined empirically after a thorough analysis was performed on ecg data from database [5] and depends on the value of variable ave. as relative refractory interval elapses, the d value is decreased according to the equations described in table 1. because the algorithm is computationally optimized to be executed by low-power microcontrollers the multiplicand constants from table 1 are chosen to speed-up the multiplication operations which can be replaced by combination of more time efficient shift, add and subtract operations. qrscomplex detection based ecg signal artefact discrimination 577 table 1 the threshold d value, used in relation (1) for the transition from state s0 to s1 timer value [ms] threshold d [0-200) oldmax*0.75 [200, 240) ave*1.25+oldmin [240, 280) ave+oldmin [280, +∞) ave*0.875+oldmin the state s1 of fsm covers the rising edge and the peak of the knoll produced by qrs complex (fig. 3). when the amplitude of x[n] becomes smaller than the threshold given by relation (2), the fsm changes its state from s1 to s2 (fig. 4). [ ] 0.75(max )x n oldmin oldmin   (2) the variable max found in eq. (2) represents the local maximum of x[n], calculated during the state s1. also, at the moment of transition from s1 to s2, the variable oldmax is updated with the max (fig. 3). the pulse on signal peak[n] is generated when the fsm state is changed from s1 into s2 (fig. 3). the peak[n] is taken later as an input by detection rules block which classifies detected peaks as either qrs waves or noise. during the state s2 the falling edge of x[n]occurs. the state is changed from s2 to s0 if the relation (3) is met: ( [ ] 0.25( )) ( [ ] 2 )x n oldmin oldmax oldmin x n oldmin      (3) the transition from s2 to s1 (fig. 4) is possible and it is caused by artefacts in the ecg signal. the state s1 changes into s2 when relation (4) is fulfilled: ( [ ] 0.25( )) ( [ ] 10)x n min oldmax oldmin x n min      (4) the variable min found in eq. (4) stores the local minimum of signal x[n], calculated during the state s2. the ave is changed when the state is changed from s2 to s0 to track the signal x[n] maximum, obtained by signal oldmax: 125.0875.0  oldmaxaveave (5) when fsm is in s0, the value of ave is approximately decreased by half after every time period equal to 2 seconds. this is achieved by reducing the signal ave after every interval of 120 ms (30 ecg signal samples): 5(1 2 ) 0.96875ave ave ave     (6) the multiplicand constant from equation (6) is chosen to speed-up the multiplication operations which can be replaced by shift, add and subtract operations. when fsm is changed from s2 to s0, the oldmin is initialized with x[n]; at the transition from s2 to s1 the variables oldmin and max are initialized with content of variables min and x[n] respectively (fig. 3). 578 b. jovanović,v. litovski, m. pavlović 4.3. noise level estimation algorithm the part of the algorithm dedicated to noise estimation is described as follows. the signal pulse[n] which is used for ecg signal artefact detection is updated at fsm's state transitions and is depicted on the middle panel of figure 3. the state transitions during which the non-zero values on pulse [n] are generated and their amplitudes are defined in the table 2. the pulse[n] is set to the value of one of variables min, oldmin or ave. table 2 the fsm state transitions at which the pulses are produced on pulse[n] and corresponding values state transition amplitude s0 -> s1 min s1 -> s2 ave s2 -> s1 oldmin, if (ave≤20) s2 -> s1 min, if (ave>20) the signal pulse[n] has to be normalized. the algorithm is executed by a microcontroller with limited processing capabilities which does not calculate with fixed-point numbers and the value pulse[n] is multiplied with constant of c=32, which is arbitrarily selected. after these numbers are multiplied, the result is divided by signal ave. normalized signal pulse2[n] is described by eq. (7). 2[ ] 32 [ ]/pulse n pulse n ave  (7) the result of noise level estimation block is the signal noisy_interval[n] providing the information if the ecg signals quality is ‟acceptable‟ or ‟unacceptable‟. the block produces noisy_interval[n] equal to 1 when an interval is identified as noisy. the borders of noisy intervals are estimated considering amplitudes of non-zero values produced by pulse2[n]. the interval denoted as noisy begins when two consecutive non-zero values are detected which are greater than threshold value th. the noisy interval is finished if in the sequence of five adjacent non-zero values of pulse2[n] there are not consecutive two which are greater than th. the th value is related to the value of constant c and it is determined after extensive analysis was performed on ecg data from the database [5].the threshold th=12 is used for the identification of the noisy intervals in which the qrs complexes are often missed or false detected by qrs detector. the artefacts within the detected interval include motion and poor electrode contact related artefacts. using lower value th=6 the sensitivity of noise level estimation algorithm is increased and the intervals are classified as noisy even when artefacts do not influence a qrs detection, but may distort detection of p or t waves. the noise detected using th=6 originate mostly from 50hz-related artefacts and electromyography signals. an example of ecg signals containing noisy segments is given in figure 5. the ecg signal ecg[n] is depicted on the top panel of figure 5. the middle panel presents the signal pulse2[n]. the signals noisy interval[n] and state[n] are depicted on the bottom panel of figure 5. qrscomplex detection based ecg signal artefact discrimination 579 fig. 5 the identification of noisy segments in ecg signals. the top panel presents ecg[n], the middle panel pulse2[n] and the bottom panel state[n] and noisy_interval[n]. fig. 6 noisy segments of ecg signals having ectopic beats. the top panel presents ecg[n], the middle pulse2[n] and the bottom panel signals state[n] and noisy_interval[n]. 580 b. jovanović,v. litovski, m. pavlović another example of ecg signals which are corrupted by patient's movement is depicted on the top panel in figure 6. the example shows the strength of peak processing algorithm. in the example, regular beats are mixed with ectopic beats having significantly larger and wider qrs waves than regular qrs complexes. the middle panel presents the signal pulse2[n]. the noise_interval[n] is shown on the bottom panel. despite of changes in signal morphology between normal and ectopic ecg beats, all qrs complexes are correctly identified. this can be observed by signal state[n] which is shown on the bottom panel. besides, the baseline drift does not influence the detection of qrs complexes. 4. the algorithm validation on public ecg record database the algorithm's performance was validated on physionet challenge database [5]. the database is comprised of one thousand 12-lead ecg recordings. the ecg signals are sampled at data rate of 500 hz, with the resolution of 16-bit per sample and 5 μv per bit. the duration of each ecg record in database is 10 seconds. the ecgs were recorded by nurses, technicians and other volunteers with different amounts of training. after the ecg recordings had been recorded, they were interpreted by a group of people consisting of three cardiologists, five ecg analysts, ten people without prior ecg reading experience and five persons with some previous ecg reading experience [25]. in order to estimate the quality of all ecg recordings from set, each ecg recording was presented to annotators and all the recordings were scored. 775 of the records were considered as acceptable, 223 records as unacceptable and 2 records as undefined. it is worth mentioning that records with artefacts have been labelled as acceptable even if the annotators assumed that the record quality is satisfactory for medical personnel to make accurate diagnosis [25]. the described algorithm for qrs complex detection and noise quality estimation is implemented by the program code written in matlab [26]. one thousand ecg recordings from the database [5] were analysed. the noisy signal segments, obtained using different thresholds values th, are detected for all twelve standard leads of an ecg recording. the following seven measures are extracted for each ecg lead: 1. the portion of ‟weak‟ signals in an ecg recording which have the r wave amplitudes smaller than 0.15mv. the r waves having low amplitudes are assumed to be undetectable 2. the portion of flat line segments in an ecg recording 3. the portion of segments in a recording corrupted by high vertical spikes, disabling the qrs detection in intervals following spikes 4. the value obtained by dividing the duration of noisy segments and the duration of the ecg recording. the noisy segments, which include motion and poor electrode contact related artefacts, are determined by signal noise_interval[n]=1, calculated using the threshold value th=12. 5. the value obtained by dividing the noisy segments duration and the duration of the ecg recording. the noisy segments are determined by noise_interval[n]=1, which is calculated using th=6.the detected noise intervals include artefacts related to 50hz interference and electromyography signals. the ecg signal segments considered by previous measure are excluded. 6. the portion of noisy segments of ecg signal caused by noise sources including previous two measures qrscomplex detection based ecg signal artefact discrimination 581 7. the value of rr interval variability, where the square root of the mean of the sum of the squares of differences between adjacent rr intervals is calculated, divided by mean value of rr intervals, using the following formula: 2 1 1 variability 1 ( ) (%) ( ) n i i i n i i rr rr n rr rr n        (8) the artificial neural network is used to train the relationships between the calculated measures in the presence of ‟acceptable‟ and ‟unacceptable‟ ecg records. the total number of measures used in a training process for an ecg record is 84, consisting of seven distinct measures for each standard ecg lead. the calculated measures were fed into to a multilayer perceptron (mlp) artificial neural network. the back-propagation neural network (bpnn) was used with three-layer feed-forward structure. the first layer is the input layer that has 84 neurons as inputs (seven inputs per each of twelve standard ecg leads). the second layer, called the hidden layer, has 10 neurons. one hidden layer has been proven as sufficient [27]. the number of hidden neurons was obtained after the procedure was applied that is based on methods given in the literature [27], [28]. the output layer has only one neuron providing a quality estimate of the ecg record (‟acceptable‟ or ‟unacceptable‟). in this study, the logistic function is used as activation function for the hidden neurons. the weight and bias values in the bpnn are optimized using levenbergmarquardt algorithm [29]. after the training process of a neural network has been completed, we used the same training set to test neural network effectiveness. the neural network correctly identified 715 recordings of 1000 recordings as being ‟acceptable‟ and 208 recordings as being ‟unacceptable‟. let tp, tn, fp and fn denote true positives, true negatives, false positives, and false negatives, respectively. tp counts correctly classified „unacceptable‟ records, tn correctly classified ‟acceptable‟ records, fp incorrectly classified ‟unacceptable‟ records) and fn incorrectly classified ‟acceptable‟ records. the following results are obtained tp=208, tn=715, fp=17 and fn=58. the results are characterized with sensitivity, specificity and accuracy measures, described by following equations: (%) tp sensitivity tp fn   (9) (%) tnfp tn yspecificit   (10) (%) fnfptntp tntp accuracy    (11) sensitivity is equal to 78.19%, specificity is 96.31% and classification accuracy is 92.48%. 582 b. jovanović,v. litovski, m. pavlović 5. discussion the performances of several qrs detection algorithms including the method from [18] is evaluated in [30] and [31]. the method has been developed and improved over the period of roughly 15 years, and states that the performance of the classification software is as good as or better than the performance reported from other qrs detection algorithms [30]. also, the same algorithm is used as the starting variant of qrs detector in [31], where the algorithm has been adapted to operate in high noise and frequent signal losses environments. the algorithm described in [18] was significantly improved by the proposed algorithm especially when it processes noisy ecg signals. the novel algorithm more efficiently identifies qrs waves then the algorithm described in [18], regardless of qrs complex amplitude level, width and morphology. for example, the algorithm described in [18] suffered from false qrs detections when qrs waves are wide, which was confirmed by simulations and also evaluated on real clinical data. the novel algorithm does not produce false detections for wide qrs complexes being present in ectopic beats. furthermore, it discriminates well p and t waves of ecg signal, which may have amplitudes as high as r waves. the qrs detector [18] should be more robust when detecting signals with low amplitudes and frequent artefacts [31]; for a highly noisy signal it fails to detect the peak location accurately [30]. one of the contributions of the proposed method is that it recognizes qrs complexes better than the algorithm presented in [18], particularly when qrs complexes have small amplitudes in the range from 0.15mv to 0.5mv. the algorithm can operate at rates up to 250 heart beats per minute. moreover, the ecg signal segments with large amount of artefacts are clearly identified by noise level estimation block, rejecting possible false arrhythmia and tachycardia detections. one of the results of the evaluation of proposed algorithm on clinical ecg data is presented in figure 7. the figure shows the detection of qrs complexes in the presence of ventricular tachycardia. the ecg signal, presented on the top panel, is acquired by ecg telemetry device implementing the algorithm we propose. the qrs complexes are indicated by signal state, shown on the bottom panel of figure 7. the signal noise_interval[n] is equal to zero. fig. 7 the detection of ventricular tachycardia (vt). the top panel presents signal ecg[n], the bottom panel state[n] indicating qrs detections and noise_interval[n] qrscomplex detection based ecg signal artefact discrimination 583 several studies were reported on the topic of ecg signal quality assessment [32], [33], [25]. the studies returned a simple binary score for an ecg record, which does not quantify the amount of artefacts, but just decides if an ecg record is of acceptable quality. these ecg signal quality algorithms were validated on physionet challenge database [6] comprised of one thousand 12-lead ecg recordings. we have obtained the value of accuracy of 92.48% which is comparable to those found in [32], [33] and [25]. these accuracy values are obtained for the same input ecg dataset. for example, the method from [32] was has the accuracy of 93.2%. the [33] is a variant of [22] and has accuracy equal to 92.6%. the other studies reported accuracy measures from 83.3 to 92.5% [25]. we want to emphasize the potential role of the proposed quality assessment algorithm in utility of future ecg diagnostic devices. in particular, we assume that the algorithms we propose could improve the performance of ecg telemetry devices. additionally, the quality assessment method could be used in every other kind of ecg recorders to, for example, help inexperienced nurses and technicians to record high quality ecg records. besides, in contrast to the algorithms [32], [33] that are computationally demanding and were conceived in their original design for smart phone applications, the method that we propose is computationally optimized for embedding in low-power microprocessor-based ecg diagnostic devices. 6. conclusion the work presented in this paper demonstrates a framework for combining both qrs detection and ecg signal quality assessment. such approach exploits the covariant information of the noise and relevant ecg data measured in unsupervised ecg signal acquisition environments. a more accurate false alarm reduction system has been developed, which is a must in novel wearable ecg telemetry devices. the results from this work clearly indicate that the ecg record signal quality can be estimated using qrs complex detection method, which is based on the detection of heart refractory time intervals and additionally supported by utilization of artificial neural network techniques. it is shown that the algorithm has almost the same performance as the known state-of-the-art algorithms with a considerable reduction in computational complexity. the ecg telemetry devices can be therefore greatly improved with the use of proposed ecg signal analysis routines. references [1] r. m. rangayyan, biomedical signal analysis – a case-study approach, wiley-ieee press, new york, 2002. [2] g. clifford, f. azuaje and p. mcsharry, advanced methods and tools for ecg data analysis, artech house, inc. norwood, ma, 2006. [3] a. müller, w. scharner, t. borchardt, w. och and h. korb, "reliability of an external loop recorder for automatic recognition and transtelephonic ecg transmission of atrial fibrillation", journal of telemedicine and telecare, vol. 15, no. 8, pp. 391-391, 2009. [4] s. lobodzinski and m. laks, "new devices for very long-term ecg monitoring", cardiology journal, vol. 19, no. 2, pp. 210–214, 2012. [5] physionet 2011 physionet/computing in cardiology challenge 2011 http://www.physionet.org/ challenge/2011 [6] f. la foresta, n. mammone and f. morabito, "neural nets", lecture notes in computer science, vol. 3931, pp. 78–82, berlin: springer, 2006. [7] n. v. thakor and y. s. zhu, "applications of adaptive filtering to ecg analysis: noise cancellation and arrhythmia detection", ieee trans. biomed. eng., vol. 38, issue 8, pp. 785–794, 1991. 584 b. jovanović,v. litovski, m. pavlović [8] y. liu and m. g. pecht, "reduction of skin stretch induced motion artefacts in electrocardiogram monitoring using adaptive filtering", in proceedings of 28th annu. int. conf. of the ieee engineering in medicine and biology conf., pp. 6045–6048, new york city, usa, 2006. [9] d. hayn, b. jammerbund and g. schreier," qrs detection based ecg quality assessment", physiol. meas., vol. 33, no. 9 pp. 1449–1461, iop publishing, september 2012. [10] y. kishimoto, y. kutsuna and k. oguri 2007, "detecting motion artefact ecg noise during sleeping by means of a tri-axis accelerometer", in proceedings of 29thannu. int. conf. of the ieee engineering in medicine and biology society, pp. 2669–2672, 2007. [11] j. allen and a. murray, "assessing ecg signal quality on a coronary care unit", physiol. meas., vol. 17 issue 4, 249–258, 1996. [12] y. kigawa and k. oguri 2005 "support vector machine based error filtering for holter electrocardiogram analysis", in proceedings of 27thannu. int. conf. of the ieee engineering in medicine and biology society, pp. 3872–3875, 2005. [13] q. li, r. g. mark and g. d. clifford 2008 "robust heart rate estimation from multiple asynchronous noisy sources", physiol. meas., vol. 29, no.1, 15–32, 2008. [14] s. j. redmond, y. xie, d. chang, j. basilakis and n. h. lovell, "electrocardiogram signal quality measures for unsupervised telehealth environments", physiol. meas., vol. 33, no. 9 pp. 1517-1533, iop publishing, september 2012. [15] l. sornmo and p. laguna, bioelectrical signal processing in cardiac and neurological applications, academic press series in biomedical engineering, new york: academic, 2005. [16] m. e. nygårds, l. sörnmo, "delineation of the qrs complex using the envelope of the ecg", journal of medical and biological engineering and computing, vol. 21, issue 5 , pp 538-547, 1983. [17] j. pan and w. j. tompkins 1985 "a real-time qrs detection algorithm", ieee trans. biomed. eng. vol. 32, pp. 30–36, 1985 [18] p. s. hamilton, "open source ecg analysis", in proceedings of computers in cardiology conf., sept. 2002, pp. 101 – 104. [19] d. dubin, "rapid interpretation of ekg‟s" hong kong: cover, 2000. [20] b. jovanović, m. damnjanović and m. pavlović,"12-channel pc-based electrocardiograph", electronics, vol. 10, no.2, university of banja luka, december, 2006, pp.44-48. [21] b. jovanović, m. damnjanović, "novel pc-based cardiac stress test system", in proceedings of lv conf. etran, banjavrućica, bosnia and herzegovina, 06.06.-09.06., 2011, el 2.4. [22] q. li, c. rajagopalan c and g. d. clifford, "ventricular fibrillation and tachycardia classification using a machine learning approach". ieee trans on biomed eng., 2013. [23] v. fuster, l. e. ryden, d. s. cannom, h. j. crijns, a. b. curtis, k. a. ellenbogen, j. l. halperin, j. y. le heuze, g. n. kay, j. e. lowe, s. bertil olsson, e. n. prystowsky, j. l.tamargo, s. wann "acc/aha/esc 2006 guidelines for the management of patients with atrial fibrillation", circulation, vol.8, no. 9, pp. 651-745, 2006. [24] d. prutchi and m. norris, design and development of medical electronic instrumentation: a practical perspective of the design, construction, and test of medical devices, john wiley & sons, inc., hoboken, new jersey, 2004. [25] i. silva, g. moody and l. celi, "improving the quality of ecgs collected using mobile phones: the physionet/computing in cardiology challenge 2011" int. conf. on computing in cardiology, pp. 273– 276, 2011. [26] matlab version 7.6.0.324 natick, massachusetts: the mathworks inc., 2008. [27] t. masters, practical neural network recipes in c++, academic press, san diego, 1993. [28] g.-b. huang and h. a. babri, “upper bound on the number of hidden neurons in feed-forward networks with arbitrary bounded nonlinear activation function”, ieee trans. on neural networks, vol. 9, pp. 224228, 1998. [29] litovski, v., zwolinski, m., "vlsi circuit simulation and optimization", chapman and hall, london, 1997. [30] s. mohan, g.v. kadambi, v.k. reddy, m.d. deshpande, "development of an industry standard qrs detection algorithm for automated ecg analysis", sastech journal, vol. 7, no. 1, april 2008. [31] j. oster, j. behar, r. calloca, q. li, q, li and g. clifford, "open source java-based ecg analysis software and android app for atrial fibrillation screening", in proc. of int. conf. on computing in cardiology, vol. 40, pp. 731-734, 2013. [32] h. xia, g. garcia, j. mcbride, a. sullivan, t. de bock, j. bains, d.wortham and x. zhao 2011 "computer algorithms for evaluating the quality of ecgs in real time", in proc. of int. conf. on computing in cardiology, pp. 369–72, 2011. [33] g. clifford, d. lopez d, q. li and i. rezek, "signal quality indices and data fusion for determining acceptability of electrocardiograms collected in noisy ambulatory environments", in proc. of int. conf. on computing in cardiology, pp. 285–288, 2011. facta universitatis series: electronics and energetics vol. 33, no 3, september 2020, pp. 351-378 https://doi.org/10.2298/fuee2003351m © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd graphene-reinforced polymeric nanocomposites in computer and electronics industries  hossein kardanmoghaddam 1 , mohamadreza maraki 1 , amir rajaei 2 1 faculty member of birjand university of technology, birjand, iran 2 faculty member of computer engineering, velayat university, iranshahr, iran abstract. graphene is the newest member of the multidimensional graphite carbon family. graphene is a two-dimensional atomic crystal formed by the arrangement of carbon atoms in the hexagonal network. it is the most rigid and thinnest material ever discovered and has a wide range of uses regarding its unique characteristics. it is expected that this material will create a revolution in the electronics industry. graphene is a very powerful superconductor as the movability of charged particles is high on it, and additionally, because of the high surface energy and π electrons being free, graphene can be used in manufacturing many electronics devices. in this paper, the applications of graphene nanoparticles reinforced polymer nanocomposites in the computer and electronics industry are investigated. these nanoparticles have received much attention from researchers and craftsmen, because graphene has unique thermal, electrical and mechanical properties. its use as a filler in very small quantities substantially enhances the properties of nanocomposites. there are various methods for producing graphene-reinforced polymer nanocomposites. these methods affect the amount of graphene dispersion within the polymer substrate and the final properties of the composite. the application and the properties of graphene-reinforced polymer nanocomposites are discussed along with examples of results published in the papers. to better understand such materials, the applications of these nanocomposites have been investigated in a variety of fields, including batteries, capacitors, sensors, solar cells, etc., and the barriers to the growth and development of these materials application as suggested by the researchers are discussed. as the use of these nanocomposites is developing and many researchers are interested in working on it, the need to study and deal with these substances is increasingly felt. key words: graphene, nanocomposite, electrical conductance, electromagnetic waves, capacitor, solar cells, light absorption, oled received september 26, 2019; received in revised form may 7, 2020 corresponding author: hossein kardanmoghaddam faculty member of birjand university of technology, birjand, iran e-mail: h.kardanmoghaddam@birjandut.ac.ir  352 h. kardanmoghaddam, m. maraki, a. rajaei 1. introduction up to 1980, only three kinds of three-dimensional carbon allotropes were recognized that the most popular of them were diamond, graphite, and amorphous type of carbon. in diamond, as the hardest kind of natural material each carbon atom binds with four other carbon atoms and hybridization of carbon atoms in this structure is as sp3 form. in graphite carbon atoms have sp2 hybridization and carbon hexagons create planes that each of these planes are bounded to underlying planes though weak and van der waals bond. these single planes in graphite called graphene and attracted considerable attention. special features of graphene have made it usable for electronic applications. every study on graphene has led to the development of electronic components with lower volume and higher speeds. graphene has remarkable mechanical properties which make it a wonderful material for reinforcing metal matrix composites. due to its unique optical and thermal properties, graphene is a perfect filler for multilayer composites, especially for metal matrix composites. additionally, it is taken into consideration for its viability and outstanding mechanical properties. researches on graphene and its nanocomposites is developing at many universities, research and development centers and by many people [1][2]. there are so many motivations for upgrading composites of graphene metal. reinforcing mechanism of graphene is related to its unique mechanical and structural characteristics and good binding of graphene and matrix. there are so many challenges in this area that one of them is dispersion of graphene in metal matrix of composite despite usual metallurgical methods and processes which is related to great difference in density of graphene nano planes and metal matrix. more contact surface in comparison with carbon nanotubes , reaction in matrix-reinforce interface because of higher reactive metals and also slight dispersion of graphene in matrix are among other problems in this area [2][3]. there are widespread researches in making and application of polymer nano composites aiming improvement of polymer features and increasing their application capability in different areas [4]. along with this, carbon based nano particles like carbon nanotubes [5-9] and graphene [10-16] have attained special position in making polymer nano composites. it should be noted that these nano particles have different features like mechanical reinforcement, electrical conductance and heat stability in comparison with each other [16-18]. despite wonderful advancements in using carbon nanotubes as reinforcement phase, case like tendency of nanotubes to agglomeration during process, limited access to high quality carbon nanotubes in large amounts and also their high prices have restricted manufacturing polymer nano composites reinforced with carbon nanotubes so, graphene nano particles because of mechanical and electrical features and also their dominant comprising material i.e. graphite in nature, are considered good alternative for carbon nanotubes for manufacturing polymer nano composites [19]. graphene, or in other words, chemically modified graphene (cmg) are suitable alternatives for different applications like energy saving materials, semi-paper material, polymer composites, liquid crystal tools and mechanical oscillators [1].on the other hand, the unique properties of graphene, including its electrical, thermal, electrochemical and high specific surface properties, have increased the usability of this material in many applications such as sensors, catalysts, energy suppliers and composite types [20-26]. fabbri et al.[27] produced reinforced poly butylene terephthalate nano composites reinforced with graphene by insitu polymerization method. they found that by increasing graphene amount, obtained molecule mass of https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 graphene-reinforced polymeric nanocomposites in computer and electronics industries 353 polymer decreases, but no significant change in heat resistance of nano composite is occurred. shen et al. [28] synthesized polycarbonate nanocomposites reinforced with modified graphene through melt blending. according to their results, process conditions significantly affect final properties of the resulting nanocomposite and the degree of polycarbonate grafting on the surface of graphene sheets. dong et al., [29] prepared graphene-reinforced polyimide fibers by in-situ polymerization. fibers containing 0.8% graphene showed a tensile strength 1.6 times greater than pure fibers with 200% increase in the young’s modulus. wang et al., [30] studied the effect of adding graphene to glass fiberreinforced epoxy resins on mechanical and fire resistance (flammability) properties of the resulting nanocomposite. they found an increase in both mechanical and fire resistance properties of the nanocomposite, if graphene is to the polymeric matrix. researches performed by researches by rafiee et al. [31] [32] and verdejo et al., [33] on polymer nanocomposites reinforced with modified carbon and graphene nanotubes shows that properties of nanocomposites reinforced by modified graphene is more improved than carbon nanotubes [31] [32] [34]. the researchers correlated the results to the higher contact surface area and the great ratio of the length to the width of graphene plates compared to carbon nanotubes. in the following sections of this paper, the structure of graphene (section 2), graphene-reinforced metal matrix composites (section 3), the use of graphene in lithium batteries (section 4), the effect of graphene on the electricity conductivity (section 5), increasing the cooling power of electronic components by combining different materials with graphene (section 6), using graphene in sensors (section 7), using graphene to protect against electromagnetic waves (section 8), using graphene in construction of capacitors (section 9), using graphene in touch pads (section 10), using graphene in lamps and optical leds (section 11), using graphene in the construction of microphones (section 12), the use of graphene in the manufacture of oled displays (section 13), the use of graphene in the manufacture of ink (section 14), the use of graphene in reinforcing electrical circuits against moisture (section 15), the use of graphene in industrial applications of iot (section 16), the use of graphene in transistors (section 17), the development of nanoelectromechanical switches using graphene (section 18) and the use of graphene in the manufacture of cameras (section 19) are investigated. 2. graphene graphene is two-dimensional (2d) sheet with binding carbon atoms in hexagonal configuration like bee hive that atoms have been bound with sp2 hybrid. this monolayer and bee hive structure has been shown in figure 1. graphene because of containing great mechanical, electrical, temperature, optical, high surface area and ability to control all of these features through chemical factors has attracted attention of scientists [1][2][35]. the thinnest and strongest material known so far, is a two-dimensional sheet of carbon atoms called graphene [36]. graphene is a nano particle with two-dimensional plane structure and its thickness is about one carbon atom. in these planes, carbon atoms have been bound in hexagonal network. the material structure is flawless so graphene has desirable physical properties like: electrical conductance, heat transmittance, high mechanical strength, 98% transparency and very high specific surface area [37][38][39]. 354 h. kardanmoghaddam, m. maraki, a. rajaei fig. 1 graphene monolayer and bee hive structure [2] according to research [1] graphene features are: high young’s modulus (about 1100 giga pascal), high resistance against breaking (125 gpa), good heat conductance (5000w/mk), high mobility of load carries or in other words high electrical conductance (200000 vs/cm2 ), high specific surface area, calculated amount: 2630 (m2/g) and wonderful transmittance events like quantum hall effect. some of the most important physical and mechanical properties of graphene have been presented in table 1. table 1 some of the most important physical and mechanical properties of graphene [2] property graphene electron mobility 1500 cm2 v-1 s-1 resistivity 10-6 ω-cm thermal conductivity 5.3*103 wm-1k-1 transmittance >95% for 2nm thick film >70% for 10nm thick film elastic modulus 0.5-1 tpa coefficient of thermal expansion -6*10-4/k specific surface area 2630m2g-1 tensile strength 130 gpa the less graphene layers, the higher its properties [40][41]. so methods by which few layered graphene are produced in high scale are more important. electrochemical exfoliation is among top-down graphene synthesis methods with a higher production rate and lower costs than other methods [42]. also with many solvents, so many kinds of graphite can be produced in room temperature [43]. a variety of methods are used for graphene synthesis including micromechanical exfoliation, epitaxial growth, chemical vapor deposition (cvd) and chemical methods [1][2]. 3. graphene reinforced metal matrix composites proper scattering of nanoparticle reinforcers within the polymer field is an essential parameter to achieve enhanced properties compared to matrix polymer. if the graphene is properly scattered within the polymer phase and there are strong interactions between the graphene and the polymer interface, the overall properties of the polymer matrix will be significantly improved. much efforts have been invested to achieve a homogenous system with good dispersion of graphene sheets in the polymer matrix through covalent or noncovalent bonds on the graphene surface [33]. there are so many researches on graphene graphene-reinforced polymeric nanocomposites in computer and electronics industries 355 reinforced metal matrix composites for example graphene-platinum composites, graphenegold, graphene-cobalt, silicon-graphene, aluminum powdergraphene, magnesium graphene, composite foil copper-graphene and nickel-graphene [2]. some of the graphenereinforced metal matrix composites, their properties, applications have been listed in table 2. table 2 an illustration of metal-graphene composites [2]. composition properties and applications pt-graphene super capacitor-fuel cell applications electrochemically active surface area-catalyst carrier in electrocatalysis and fuel cells applications ai/pd/pt acts as catalytic methanol oxidation-methanol fuel cell applications au-graphene dna gets adsorbed faster than only au surface biosensors, biodevices and dna sequencing applications voltammograms of electrolytic reduction of oxygen and glucose oxidation shows more au-graphene than alone au-fuel cell and bioelectroanalytical chemistry applications apparent electrode area environmental monitoring-detection of mercury electroactive surface area-electrochemical detection of dna specific sequence applications co-graphene anode material for li-ion battery applications sigraphene anode material for li-ion battery applications ai powder-graphene graphene as reinforce-strenghening of composite applications decreased strength and hardness lower failure strain and higher vickers hardness mg-graphene based composite production of ultra high performance metal matrix composite cu-graphene composite foil higher the electrical conductivity and hardness compare to copper alone mg-1%a-1%sn reinforced graphene superior nano-filler adhesion and increased and tensile strength au-graphene-hrp-cs h2o2 biosensor applications 4. use of graphene in lithium batteries lithium ion batteries nowadays have been used extraordinarily. at the moment all new laptops use lithium ion batteries. the reason for the popularity of these batteries is their high capability in rendering more power than other batteries. ion lithium battery electrodes have comprised lightweight materials such as lithium and carbon. lithium is also very reactive metal. it means that this metal can save so much energy in its atomic structure. because of this, ion lithium batteries have high energy saving density. ion lithium batteries are at present standard batteries for computers and laptops. they’re light with high life cycle. these batteries aren’t restricted by memory effect; it means that it doesn’t need to completely discharge them before recharging and they can be charged in any time in random order. finally these batteries don’t become hot in cases of extra charge and their explosion possibility is so low. they are also thinner and smaller than any other batteries used in laptops. this issue makes them ideal for using in very lightweight and small laptops produced nowadays. when these batteries are charged, 356 h. kardanmoghaddam, m. maraki, a. rajaei lithium ions from inside electrolyte material and positive pole move to negative pole and bind with carbon.normally, lithium-ion batteries can be charged between 950 and 1200 times. there have been so many researches about adding graphene as second phase to lithium for lithium batteries anode used in laptop batteries. silicon because of high nominal capacity and low discharge potential is a suitable material for lithium batteries. but its mass change in charge and consequential discharge lowers its capacity. by adding graphene to silicon because of high conductance capability, chemical stability, and also good mechanical properties, these problems can be removed. so adding graphene to silicon improves its stability as a material for lithium batteries anode [3]. chou et al, considered 15% higher output for graphene-silicon composites. although original charge capacity (2185 mah/g) is less than silicon (3026 mah/g); but this composite preserved 54% of original capacity after 30 cycles; while silicon only preserved 11%. graphene-silicon composites have higher capacity related to silicon or graphene in more cycles numbers [3]. fig. 2 graphene stability cycle, silicon in nano dimensions, silicongraphene composite electrodes and share of calculated net silicon [3]. li et al., [44] prepared silicon-graphene foams using silicon film deposition on graphene foam. they used highly flexible nanocomposites as an anode for the manufacture of lithium batteries. both experimentally and theoretically (using density function theorem (dft)), kumar et al., [45] found that the use of organic species such as porphyrins as columns between graphene oxide sheets was a promising method for development of highly flexible stable anode electrodes in sodium-ion batteries. the cell constructed by kumar et al. showed a capacity of 200 ma h⁄g with a current density of 100 ma h⁄g. the electrode showed an insignificant capacity reduction even after 700 charging/discharging cycles. the specific capacitance of the cell remained stable after leaving it for 1 month. both experiments and dft calculations revealed that the higher efficiency (stability and capacity) of the anode prepared from porphyrin graphene oxide framework could be related to an increase in the space between graphene layers. 5. electricity current conductance any material which conducts electricity properly is called a conductor.scientists believe that the main reason for conductance of some materials is that their electrons can easily release from atom and move. electrical conductance has an important role in computer graphene-reinforced polymeric nanocomposites in computer and electronics industries 357 industry and data transfer in electronic and computer systems. adding nano material to conductors increases their conductance. according to the literature, carbon nanotubes show an electrical percolation threshold at low concentrations. also, graphene or modified graphene in same amounts or less than carbon nanotubes are capable of forming conductive network [34]. in graphene-resin epoxy nano composite, electrical conductance has been increased considerably (12 times) [46]. in specified amount of nano particle called as percolation threshold, nano particle is capable to form network structure. this causes sudden increase in nano composite electrical conductance [47]. inherent conductance and length to width ratio of filler nano particles based on carbon make them a suitable alternative for obtaining this percolation threshold in less amounts of filler phase. the research results as indicated that flawless graphene planes indicate signs of ballistic transport [48]. although electrical conductance of graphene using modified chemical methods is not as well as flawless graphene, but it is still suitable alternative for producing electrical conductance nano composites. the first and the most common used method for chemical reduction and layering graphene oxide is using dispersion in colloid form inside hydrazine hydrate [49][50]. chemically modified graphene as product of this method contains carbonyl, epoxy, and carboxylic acid groups. conductance of a sample powder was measured about 200±2400 s/m that is comparable with 20±2500 s/m for graphene oxide [49]. graphene oxide is reduced and thermally exfoliated through continuous heating at high temperatures [50]. the resulting chemically-modified graphene contains carbonyl, epoxy and carboxylic acid functional groups with structural defects and surface shrinkage. despite these surface defects, a bulk conductivity of 1000 to 2300 s/m has been measured for modified graphene. kuang et al., [51] used electrodeposition technique for preparation of nickel nanocomposite films. according to hardness and young’s modulus measured for nickel-graphene composites, mechanical properties of the composite were significantly improved in comparison with neat electrodeposited nickel samples. while nickel-graphene composite showed a hardness and young’s modulus of 6.85 and 252.76 gpa respectively, the corresponding values measured for pure nickel were only 1.81 and 166.70 gpa, respectively. the electrical conductivity of the nickel-graphene composite rose also by 15% compared with pure nickel, as shown in figure 3. fig. 3 comparison of electrical conductance of pure nickel and graphene-nickle composite [51]. 358 h. kardanmoghaddam, m. maraki, a. rajaei tchernook et al., [52] produced nanocomposite from nanocrystal of heavy poly ethylene and graphene as ethylene insertion polymerization in water. graphene dispersion in monocrystal water solution poly ethylene led to increasing the electrical conductance. high electrical conductance and low percolation threshold may be related to composite microstructure. small size particles of polyethylene nanocrystals form homogenous mix of graphene in polymer matrix. kim et al., [53] produced nanocomposites from lldpe and graphene by solution method. in this research, graphene nanoparticles were covered by paraffin. results indicated that adding paraffin decreases electrical conductance percolation threshold. electrical conductivity of the above-mentioned composites revealed the lower conductivity of the samples prepared by solution blending than nanocomposites synthesized using other methods. in a similar research, jiang et al., [54] produced hdpe graphene nanocomposites (hdpe/graphene) and hdpe multi wall carbon nanocomposite tubes (hdpe/mwcnt). both nanoparticles were covered by paraffin. the results indicated that manufactured nanocomposites by multi wall carbon nano tubes in less amounts in relation to graphene reach percolation threshold. in another research, mohamadzadeh et al., [55] have synthesized polyaniline-graphene oxide with polymerization method in monomer aniline adjacent to graphene oxide planes as mild oxidant agent. in this method any external oxidant agent hasn’t been used and obtained composites has high electrical conductance and crystal traits. 6. increasing the cooling power of electronic components by combining different materials with graphene cooling electronic parts is one of the ever present problems of users and because of that they have always attempted to cool their system in order to preserve its output and efficiency in long term. despite that it has attempted to use lower voltage and frequency in producing computer parts, especially cpu, hard disk and graphic cards produce so much heat during their working. the heat generated in the electronic components must be balanced for the components to be able to operate in safe heat so that the system does not have any problems with data loss and crash. new portable computer and telecommunication systems (laptop) use small heat pipes for removing heat, as nowadays computer advancement is such that while showing higher capabilities more heat is produced. heat pipes are widely used in cooling computers. these pipes are empty inside containing heat transfer fluid. when the fluid is vaporized in warm part of the pipes, transfers heat to cool part of the pipes and there the fluid is condensed and returns to the warm part of the pipe. increasing heat conductance of material by manufacturing polymer-graphene nanocomposites has been boomed incredibly. most studies have focused on the effect of modified graphene on thermal properties of polymeric nanocomposites such as thermal stability, glass transition temperature (tg), melting point (tm) and crystallinity [33]. fang et al., reported increasing heat conductance of polystyrene film filled with 2% graphene weight bound with polystyrene from 0.158 w/m.k to 0.413 w/m.k [56]. noorunnisa khanam et al., [57] prepared lldpe/graphene nanocomposites by melt blending and studied the effect of nanoparticle concentration and extruder rotor speed on thermal stability of the resulting nanocomposites. in this study motor rounds of 50, 100 and 150 rpm were used respectively for polymer blending and nanoparticles. the results indicated that in prepared nanocomposites with motor round of 150 rpm, degradation graphene-reinforced polymeric nanocomposites in computer and electronics industries 359 temperature increases because of better dispersion of nanoparticles in polymer beds. also graphene nanoparticles act as heat block and improve the heat resistance. kuila et al., [58] prepared lldpe nanocomposites and modified graphene with dodecylamine (da-g) with solution method and examined their heat properties. the results of thermal gravimetry analysis (tga) indicated that graphene increases polymer heat stability. kim et al., [59] prepared graphene and lldpe nanocomposite and effect of graphene nanoparticles on crystal features. the results indicated that by increasing graphene nanoparticles, the crystallization temperature does not change but crystallization rate decreases. in other words, physical presence of graphene nanoplanes blocks movement of polymerized chains and crystallization rate decreases. park et al., [60] prepared fluids with high heat conductance using combined graphene planes with pure fluid like water. these researchers reported that fluids containing oxidized graphene have better heat properties in comparison with fluids containing graphene. choi et al., [61] used poly methyl methacrylate nanocomposites and prepared graphene with very low graphene rate for removing produced heat in electronic equipment. they observed heat conductance of these nanocomposites is 3 times of pure samples. these nanocomposites have higher transparency in addition to being light weighted. boron nitride (bn) was combined with graphene to construct a tool capable of effective heat removal and cooling of electronic devices [62]. to this end, graphene is deposited on boron nitride. a graphene-based transistor was developed on a boron nitride substrate. this system is able to cool electronic devices 10 times more effective than conventional methods. the mechanism used in this tool takes advantage of the 2d nature of graphene and boron nitride to create a thermal bridge with the substrate. to this purpose, they used boron nitride crystal with a thickness of several ten nanometers. this layer is mounted on the gold surface. then, the layer containing graphene-based transistor is mounted on the gold surface. the heat flow in the boron nitride crystal was measured by raman spectroscopy. the cooling mechanism in this tool was explained by dielectric anisotropy of the boron nitride layer. due to the anisotropic property, the insulator enters a photothermal mode called hyperbolic polariton (hp) in which heat flows in the matter in places considered forbidden zones in other insulators. thus, this system removes heat more effectively than other methods. this mode opens a real thermal bridge between graphene and back electrode leading to heat removal with 10 times higher efficiency. the efficiency of the transistor increases by 10 times when entering the zener-klein zone. this tool makes use of hyperbolic polariton mode to transfer heat to the substrate without any damage to the graphene network. 7. graphene containing sensors moisture is called water vapor in the air. water vapor is totally transparent and we can’t see it by naked eye, but high moisture causes may problems especially short connection in electronic machines and damages computer parts. moisture resides as water drops on objects. the air can keep so much water vapor. when the air becomes warmer, the air moisture increases. sensors can be made of materials with a large range of electrical conductivity from polymeric composites with conductivities close to percolation threshold to polymeric nanocomposites which are used for the manufacture of gas, ph, pressure or temperature sensors [44][63][64][65]. 360 h. kardanmoghaddam, m. maraki, a. rajaei wang et al [66] prepared sensors stimulant to ph fluctuations and heat using graphene oxide and poly methyl methacrylate derivatives. they observed that sensitivity level of these sensors is related to combined graphene oxide. qin et al., [67] prepared membranes for separating gases using graphene. they found that these membranes have high capability in separating hydrogen and methane gases and we can use them for removing efficient environmental problems. li et al., [68] prepared new version of sensors sensitive to moisture using combination of graphene with polypyrrole in different amounts of graphene. their study results indicated that sensors with 10% graphene weight are more sensitive in relation to other sensors with response time 15 to 20s and this sensor can be used in protecting electronic parts against moisture. one of the materials in industrial and chemical areas that damages electronic and computer parts is presence of ammonia. in research [69] prepared a sensor for detecting ammonia using reduced graphene oxide with chemical method. they observed that these kinds of membranes have more sensitivity in detecting ammonia with very low densities that can be used in industrial centers with electronic server and equipment for protecting this equipment. 8. protection against electromagnetic interference (emi) electro magnetic interference (emi) means disruption or decrease in efficient performance of equipment and tools because of electromagnetic flames from an unsolicited source in the frequency range the same as working frequency. the purpose of protection against electromagnetic waves is to attain a certain attenuation level of these waves. this is performed through reflection and absorption of these waves by protective material. generally, material performance in electromagnetic fields is determined by moving electrons freely and their atomic movement in the magnetic field. the main mechanism of electromagnetic protection includes producing magnetic field opposed with striking magnetic field and as a result energy loss in protective area and weakening entering waves (figure 4) [70]. in using nanoscale materials, this protection because of high conductance of nanocomposites is more effective than other protective materials. fig. 4 electromagnetic protection mechanism (emi). waves crossing protection cover lose considerably their strength when existing [70]. mainly effectiveness of electromagnetic protection of a composite material depends on inherent conductance of protective material and its electrical permittivity coefficient. among this, application of nanomaterial like carbon nano fibers and graphite layers because of unique thermal, electrical, mechanical and physical features for using in composites has graphene-reinforced polymeric nanocomposites in computer and electronics industries 361 attracted so much attention. small diameter, high dimensional ratio, high conductance, high mechanical stability of carbon nanotubes has made these materials a great alternative for applying in electromagnetic interference protection with low weight percent and high performance. graphene is a good alternative for emi shielding because of unique features. graphene even in lower weight percent is also effective in improving composite shielding features. according to figure 5 it can be observed that emi shielding effectiveness increasing by higher nano material and it has acceptable trend for all frequency ranges. shielding effectiveness level for 15 weight percent of graphene (8.8 mass) is obtained 21 decibel [71]. song et al., [72] prepared composite films containing ethylene vinyl acetate and graphene and studied their capability for application in electromagnetic interference shielding. fig. 5 process of emi shielding effectiveness for different weight percentages of graphene in graphene-epoxy nano composite [71]. 9. graphene-based supercapacitors supercapacitors with a higher power density and cyclic life than batteries are used to store electrical charge [73][74]. however, the widespread use of supercapacitors has been limited due to their energy density [75]. accordingly, most studies in this area have focused on methods for increasing specific capacity of supercapacitors [78]. graphene and its derivatives are extensively used for the manufacture of supercapacitor electrodes due to their lower costs than other materials such as metal oxides [76]. in addition, graphene-based electrodes provide a lower energy density than metal oxides [77]. the total capacitance of a supercapacitor can be increased through changes in electrode structure [75] [78][77][79]. according to hwang (2012), quantum capacity is the factor limiting the total capacitance of graphene-based capacitors [79]. these calculations were repeated by wood et al., (2014) and same results were reported. the effect of graphene functionalization on quantum capacity was studied in 2015 [80]. according to the results, the use of functionalized graphene as the base material for the supercapacitor electrode will provide very favorable results. according to [81], modification of graphene sheets with n, p, s and si atoms may affect quantum capacity. studies have also shown interesting effects of graphene sheet functionalization [80]. the results of an experimental study confirmed the https://www.google.co.in/url?sa=i&rct=j&q=&esrc=s&source=imgres&cd=&cad=rja&uact=8&ved=2ahukewj9koeonvrgahwfduwkhqyhbtiqjhx6bagbeam&url=http%3a%2f%2fdiscovermagazine.com%2f2009%2fjul-aug%2f09-ways-carbon-nanotubes-just-might-rock-world&psig=aovvaw3p7pc5szxxkb0wxzpcw9vl&ust=1552398743189379 362 h. kardanmoghaddam, m. maraki, a. rajaei significant impact of functionalization of graphene sheets on energy density [82]. the structural defects also improve quantum capacity [77]. graphite oxide all over its three dimensional structure has nano metric porosity and curvature walls with one atom thickness. this material is exceptionally a great electrode material for super capacitors that enables to use these energy saving wares in wide range of applications especially manufacturing electronic devices used in computer and telecommunication industry. we can convert graphite oxide to individual and mono layer plates using methods like thermal or chemical operations. graphite is exfoliated to produce graphene oxide monolayers due to polar oxygen functional groups on graphene sheets, which improve the distribution of graphene oxide sheets in polar solvents such as water and many other organic solvents. the graphene sheet can be subsequently reduced by reducing agents such as hydrazine hydrate, dimethyl hydrazine, sodium borohydride and ascorbic acid. this causes that graphene oxide plates recover their sp2 carbon network. however, graphene oxide layers are not completely reduced leading to the formation of carboxylic acid and hydroxyl functional groups on the edges of graphene oxide sheets [83],[50]. at the moment activated carbon in most of available commercial super capacitors or two layered electrochemical capacitors used as electrodes because of high area and electrical conductance [84]. carbon nanocomposite fillers can be added to polymers to improve the performance of electrodes. the results of a study indicated a specific capacity of 120 f/g for graphene-propylene carbonate by using tetraethyl ammonium tetrafluroborate as the electrolyte. according to the results of another study, the electrode made of polyaniline nanocomposite filled with graphene oxide reduced by microwaves in sulfuric acid showed a capacity of 408 f/g [85][86]. yuan et al., [87] invented a method for preparing three dimensional and porous structures from graphene oxide with high efficiency in making capacitors. these researchers used graphene oxide for preparing capacitor, and then by using chemical reduction methods, prepared porous structures of graphene. tu f. et al., [88] invented a simple method for making three dimensional structures of reduction graphene oxide in ethylene glycol having capability of use in lithium capacitors. these researchers stated that such capacitors don’t lose their capability after 3000 cycles. despite the reasonable double-layer electrochemical capacity of graphene (526 f.g-1), experimental results are fewer than theoretical ones leading to the agglomeration of graphene sheets and reduced surface area and permeability of electrolyte ions into electrodes [89]. to solve this problem, a three-dimensional graphene network (3dgns), with an intertwined structure, has been used as an ideal supercapacitor material. intertwined 3dgns with a very large surface area, high specific capacity, excellent mechanical properties and high electrical conductivity provide a unique supercapacitor material with a high charging-discharging capability and lifetime [90]. table 3, lists specifications of some supercapacitor materials made of 3d graphene composite and transition metal oxides/hydroxides. graphene-reinforced polymeric nanocomposites in computer and electronics industries 363 table 3 supercapacitor materials made of 3d graphene (3dgns) and intermediate metal oxides/hydroxides composite specific capacity (cs) (f.g -1 ) number of cycles tolerated energy density (wh.kg -1 ) power density (kw.kg -1 ) electrolyte synthesis method ref sno2/ga 310 (~90%)1000 30 8.3 2m koh chemical selfassembly [91] v2o5 nanobelt/gh 426 (95%)5000 21.3 --0.5 m k2so4 ultrasound waves and hydrothermal [92] mno2/gf 130 (82%)5000 6.8 2.5 0.5 m na2so4 cvd, electrochemical deposition [93] sponge-rgo/mno2 450 (90%)10000 8.34 47 1 m na2so4 dip coating [94] mno2/ga 410 (95%)50000 ------0.5 m na2so4 sol-gel, electrochemical deposition [95] mno2/gh 242 (89.6%)1000 21.2 --1 m na2so4 self-assembly [96] mno2/gh/nf 234 (98.5%)10000 ----0.5 m na2so4 electrochemical deposition [97] ruo2/cnt/gf 503 (106%)8100 39.28 128.01 2 m li2so4 cvd [98] co3o4/gh 757 (94.5%)500 9.3 142.9 6m koh hydrothermal [99] co(oh)2/gf 1139 (74%)1000 13.9 18 1m koh chemical bath deposition [100] ni(oh)2/gh 1247 (95%)2000 31.1 9 6m koh hydrothermal [101] ni(oh)2/gf 1560 (63.2%)10000 6.9 44 6m koh hydrothermal [102] ni(oh)2/gf 1450 (78%)1000 ---6m koh apcvd hydrothermal [103] nio/gf 816 (100%)2000 ---3m koh cvd electrochemical deposition [104] fe2o3/gh anode 908 (75%)200 ---1m koh go solution hydrothermal ultrasound waves [105] 3d fmg 508 (94%)1000 15.32-66 14.43-52 thermal decomposition and ultrasound waves [106] 3dg layers 231.2 8000(>99%) 32.1 0.5 1 mna2so4 gas foaming [107] nico2o4 nanoneedles/3dgn 970 3000(~96.5%) solvothermal cvd [108] nio/gm 727 (94.5%)1000 ----6m koh hydrothermal [109] n-rgo 214 (100%)5000 -----6m koh ice-templating [110] 364 h. kardanmoghaddam, m. maraki, a. rajaei 10. improving light absorption using graphene graphene is two dimensional carbon page having network structure like bee hive and only has one atom thickness. graphene has manifold light, electronic and heat properties. dispersed electrons in graphene like weightless dirac fermions behave in linear relation energy-size movement and cause increasing reaction of graphene carriers in area temperature to 105 cm/vs and in lower temperatures it becomes 106 cm/vs. graphene absorption coefficient is higher than other conventional semi-conductors and another feature of graphene is high heat conductance as 5000 w/mk for mono layer graphene and zero energy gap causing that graphene is used in devices such as light illustration, solar cells, light emitting diodes and so on. it should be noted that graphene with high light absorption depending on short interaction length only absorb 3.2 percent of visible light to infrared. this amount of light absorption in graphene is not enough for using in illustration devices. recently light technologies have been used for improving graphene light absorption. echtermeyer et al., [111] combined graphene layer with plasmonic nanostructures that increased efficiency of graphene photodetectors. abajo et al., [112] used periodic graphene pattern for improving light absorption in the ultrared area. zhao et al., [113] used metal grating for increasing light absorption in graphene. zhu et al., [114] figured out that blending plasmonic array of empty pores in nano scale in visual light area, increases graphene light absorption to 30%. the photoresponsivity and photocurrent of several photodetectors have been compared at a communication wavelength of 55.1 µm [115]. this research indicates the superiority of designed photodector in relation to other cases. table 4 compares the photoresponsivity and photocurrent of the proposed photodetectors with those proposed in [115]. table 4 comparison of photoresponsivity and photocurrent of the proposed photodetector with those in [115] references power or input intensity photo responsivity photo current [116] 80 mw/cm 1.0 a/w 765.2 ma [117] 5.0 mw 9.0 ma/w 45.0 µa [118] 5.0 mw 273.0 a/w 137.0 ma [119] 6.0 µw 37.0 a/w 222.0 µa [120] 5.0 mw 100 a/w 50 ma 11. graphene application in solar cells one of the issues for providing energy for portable electronic devices that has been examined is using photovoltaic cells. photovoltaic cells are considered one of the energy providing resources in the future of the world. it is estimated that up to 2050, 15 to 30 percent of world power will be provided by solar energy. at the moment, most of the photovoltaic cells are made of mono crystals or silicon poly crystals. among the new combinations used at the moment in making photovoltaic cells, are many kinds of carbon nanostructures [121]. carbon nanotubes used in composite structures can increase efficiency of solar cells because of high surface area and current conductance. researchers have relied on using graphene for making solar cells. using nanotube structures and graphene in photo electrode can increase the velocity of electron movements. however, increasing nanotube amounts and also graphene-reinforced polymeric nanocomposites in computer and electronics industries 365 graphene increase rate of electrons returning from photo electrode. so, an optimal amount in this area should be considered. according to the graph of converting current based on voltage, three electrodes were compared from graphene, multi wall carbon nanotubes (mwcnt) and graphene based multi wall carbon nanotubes (gmcwnt); transferring load in electrode based on graphene multi wall nanotubes (gmwnt) has been higher than other two electrodes [122]. jeon et al [123] prepared hole transport layer (htl) for the manufacture of solar cells by thermal reduction of graphene oxide. according to their results, graphene dispersed in polystyrene sulfonate increased the efficiency of solar cells compared with those manufactured by adding polyethylene dioxythiophene to polystyrene sulfonate. adding small amount of gold nanoparticles and boron doped carbon nanotubes (au:bcnt) improves light excitation and electron hole pair separation as charge carriers for charge transport to the electrodes in solar cells. multiple synergistic effects led to a high efficiency of 9.81% [124]. 12. graphene-based touchscreens touchscreens as input/output (i/o) tools allow users to communicate or control what is seen on the screen by touching the screen with one or multiple fingers or with a stylus tip (a pen-like tool). due to the need for transparent conductive materials (tcms), extensive studies have been conducted to find out alternatives for indium tin oxide (ito) as the most commonly used tcm. transparent conductive electrodes are used in numerous optoelectronic devices. currently, indium tin oxide (ito) is used as a transparent conductive electrode due to high electrical conductivity and optical transparency. however, it may not be a suitable choice due to technical and economic limitations. the use of ito is limited for two reasons. first, indium is a very rare expensive element. second, ito is brittle and its electrical conductivity is irreversibly decreased with a small bending. this limits the use of ito in applications requiring high flexibility [125][126]. ito as an oxide ceramic material is very brittle and susceptible to cracking. today, graphene is considered as a good alternative for transparent conducive electrodes in many applications. graphene is combined with silver nanowires for facile manufacture of novel touchscreens with a higher strength. furthermore, graphene-based touchscreens consume less energy and are easily bending due to their high flexibility. touchscreens available on the market are usually constructed from an indium tine oxide (ito) layers, which are very expensive and brittle despite their high electrical conductivity. touchscreens constructed from silver are not economically feasible, so it is better to manufacture touchscreens by combining graphene and silver. this type of touchscreen has a low mechanical strength, and most of its users have complained of the fracture of touchscreens. metal nanowires (mnws) integrate high flexibility, optical transparency and good electrical conductivity. despite the use of fewer raw materials, mnws show a good transparency and electrical conductivity like ito electrodes due to a large length to diameter ratio. to achieve an optimal electrical conductivity and transparency, a higher indium level is used in ito electrodes compared with silver level used in the manufacture of silver nanowire electrodes. adding graphene to silver nanowires increased their electrical conductivity up to around 10000 tines. this shows the possibility of obtaining similar or even better results with an improved performance and less energy 366 h. kardanmoghaddam, m. maraki, a. rajaei consumption only with part of the silver used earlier in the manufacture of such electrodes. according to the literature, the use of graphene significantly reduces manufacturing costs of touch films. it should be noted that silver is darkened when exposed to air, but the graphene layer preserves silver against air molecules. furthermore, the electrical properties of graphene films do not change with bending. while previous samples faced many limitations in this regard, this new material paves the way for the manufacture of flexible devices [127]. 13. graphene-based bulbs and light emitting diodes (leds) according to the light spectrum emitted from graphene, it could be heated to temperatures above 2500 c and warmed enough to emit light. the light emitted from this thin graphene layer is very intense and visible to the naked eye, without magnification. a visible light source using graphene strings on a chip is developing, and many studies are currently being conducted in this field. this new type of broadband light emitters can be integrated with chips to pave the way for the manufacture of flexible transparent displays with an atomic thickness as well as graphene-based optical communications. light emission in small structures on a chip is essential for development of photonic circuits that work with light. graphene is able to resist against overheating without melting of metal or silicon substrate. moreover, graphene is not able to conduct heat and, therefore, heat is concentrated at the center of carbon strings leading to intense light emission [128][129][130]. graphene bulbs are similar to ordinary light bulbs in appearance but contain a thin graphene layer leading to a higher efficiency and light emission. graphene bulbs with a lower manufacture cost and higher brightness and lifetime reduce power consumption. compared to the ordinary lightbulbs and light emitting diodes (leds), graphene bulbs consume less energy. graphene-based leds are used in led displays and monitors with color and quality setting, cell phones, tvs and led lightweight textures with color adjustment. h.diker et al., used graphene oxide and pedot: pss composite for hole injection in light-emitting diods (leds) [131]. to this end, various graphene sizes consisted of gangrene oxide were examined. despite the low efficiency of leds, they found the significant effect of graphene oxide as a hole injector layer (hil). it seems that graphene bulbs and leds are able to change computer and communications industry. the very small size of graphene bulbs and leds allows the manufacture of displays with a higher sensitivity and color capabilities. however, many studies should be conducted in this regard to use graphene-based photonic devices in future. 14. graphene microphones microphone are a type of device or transducer, which convert sound into an electric current. in other words, a microphone is a transducer capable of converting sound into electric signals. there are numerous studies on the use of graphene in the structure of microphones[132-135]. graphene microphones are ultrasonic and lightweight. both conventional speakers and microphones use either paper or plastic diaphragms, which play a key role in sound generation or recognition through vibration. the diaphragms used in new devices are made of a graphene sheet with a thickness of only one atom. it is lightweight diaphragm with high hardness and strength, which is able to respond to a wide range of frequencies from infrasound (≤20 hz) to ultrasound (≥20 khz). one of the graphene-reinforced polymeric nanocomposites in computer and electronics industries 367 great advantages of using graphene is that ultrathin graphene sheets well respond to various frequencies of an electronic pulse. unlike currently used piezoelectric speakers and microphones, the frequency response of this lightweight membrane covers a very wide range capable of generating rapid frequencies for measuring distances more accurately than traditional methods. the membrane converts over 99% of energy into sound. the corresponding value for conventional microphones and speakers, however, is only 8% [133]. graphene microphones constructed by spanenović et al., [132] were 32 times more sensitive than standard nickel microphones. they constructed a very sensitive graphene membrane to convert sound into electric current. sensitivity of the graphene sheet was 15 db greater than conventional models in the market. in their study, graphene membranes with 60 layers were grown on a nickel foil by chemical vapor deposition (cvd). when graphene was produced, the nickel layer was removed from graphene and the grown layer was placed on the surface of microphone. according to the results, this microphone was more sensitive than commercial microphones by 15 db. they simulated a 300-layer membrane with a high efficiency in infrasound range. a thick graphene membrane can be flexible with a good performance for infrasound waves. graphene microphones are very useful for studying hearing signals in high frequencies. beside electromagnetic waves, acoustic waves and highly-oriented long-range sounds are expected to be used in communication devices such as mobile phones. 15. graphene oleds organic light-emitting diodes (oleds) have been widely developed and used due to their high image quality, low power consumption and ultrathin structure. oleds consist of a vibrant and active organic structure embedded between two electrodes. one of the electrodes should be transparent. indium tin oxide (ito) is commonly used in oleds. however, indium is an expensive rare element, which is hardly recovered. graphene is a good alternative to make electrodes. graphene is used to form transparent electrodes (tes). it is also used as an electrode in oleds [136]. the graphene oleds showed similar performance as control tools made from ito transparent electrodes indicating the potential application of graphene. the oled designed by lee and yoo in [137] was very complex and yet efficient. in these displays, graphene was embedded between transparent thin titanium oxide and conductive polymer layers. the displays consist of 5 sticking layers. the displays are mounted on a plastic substrate. by applying voltage to the sheet, cathode emits electrons and holes are produced by the anode leading to photon emission by oled. photon emission occurs in one of the layers by recombination. the light emission path in this type of displays can be determined by cathode and anode adjustment. a titanium oxide layer with a high refractive index and a hole injection layer in the conductive polymer (with a small refractive index) have been used in this scheme. the whole structure is mounted on both sides of the graphene layer. the color can be controlled and the loss of surface plasmon polariton is reduced in this type of displays. the performance of the resulting display is improved due to concurrent use of two layers with different refractive indices. 368 h. kardanmoghaddam, m. maraki, a. rajaei 16. graphene inks highly flexible graphene inks with a very high electrical conductivity are used on a wide range of substrates including paper and plastics, and they are highly flexible. this type of inks shows a higher surface stability than conductive composites and carbon inks, and, they are much cheaper than metal inks. graphene ink utilized graphene, various polymers and surfactants, and functional groups manufacturing techniques that reduce aggregation and enhance graphene ink dispersion. graphene inks could accelerate the printing process of electronic devices leading to a decrease in the relevant costs. to produce graphene inks, graphene particles are dispersed in a solvent and then water is added to the base ink. the ratio of ingredients in the system is adjusted to preserve solvent properties without affecting ink and graphene composition in the solvent. conventional ink is combined with highly conductive silver and used in printing machines leading to an increase in ink cost. graphene inks are relatively cheaper than silver-containing inks. silver cannot be recycled while graphene can be recycled and reused. there are numerous studies on the use of cheap nontoxic and environmentally friendly graphene inks [138-142]. graphene inks and other two-dimensional graphene related materials (grms) have received much attention for novel technical advances in smart texture industry to produce electronic devices combined with novel fabrics and textures. a method has been invented in [143] for deposition of graphene ink on cotton to produce conductive fabrics. expensive metals such as silver are used for preparation of other conductive inks and thus are very unstable and expensive. however, the graphene used in this study is cheap, environmentally friendly and chemically compatible with cotton. this method allows direct placement of electronic systems on the human body. this is a novel technology to manufacture smart fabrics. 17. use of graphene in reinforcing electrical circuits against moisture graphene can be combined with metals to produce moisture-resistant connections in electronic circuits [144]. this can be useful for development of novel low-cost sensors. to produce highly efficient sensors, graphene should preserve its electrical conductivity after being combined with electronic circuits. a durable connection is necessary in any sensor, and it plays a key role in sensor function. however, graphene is sensitive to moisture, and water molecules may surround graphene by water adsorption on the surface of graphene. electrical conductivity of graphene changes by water adsorption and thus wrong signals are sent to the sensor. if graphene attaches the metal in the electronic circuit, its resistance will not change in the presence of water molecules. in fact, moisture will not adversely affect graphene performance. according to quellmalz, one of the researchers of the project, this technology will facilitate sensor design as moisture is not a concern and water will not negatively affect the circuit. they conducted experiments on the graphene connected to gold-metallized silica plates. this structure was then evaluated by different methods and computer simulations. according to quellmalz, one can take advantages of graphene and electronics by combining them. graphene has unique properties and conventional electronics is cheap on the other hand. therefore, one can take advantage of both graphene and electronics. to combine these technologies, graphene is placed on the finished electronic component instead of metal deposition on the graphene surface. graphene-reinforced polymeric nanocomposites in computer and electronics industries 369 18. graphene ink for development of internet of things (iot) the internet of things (iot) is making extensive changes in modern cities and human's everyday lives around the world. iot deals with people's accessories, assets, information, knowledge, services, and businesses. scientists have developed a flexible, soft type of graphene that is capable of bending, folding, etc., and can produce three-dimensional conductive objects in any form. these achievements will make it easier to produce iot-based objects and smart products, and graphene can be used to produce advanced electrical products used in iot. on the other hand, graphene can also be used to supply the power of iot devices [149-151]. in research pan k. et al., [145], a method has been proposed for the manufacture of printed electronic components using 2d materials. while providing a high rate, this method is also cost effective. the graphene-based ink can be used for the manufacture of electronic devices, in particular those employed in internet of things (iot). graphene as a 2d material consisting of carbon atoms with high electrical conductivity can be used in iot industry. however, two main problems limit the use of conductive inks in iot: high price and rapid oxidation. these two challenges limit industrial use of 2d carbon materials. dihydrolevoglucosenone known as cyrene was used to change graphene properties. according to the results, cyrene increases exfoliation rate of graphite to produce graphene at a lower cost by using a nontoxic and completely renewable method. 19. using graphene in construction of transistors defect-free graphene is an ideal 2d lattice in which carbon atoms with sp2 hybridization provide a high strength. however, the durability of polycrystalline graphene is not sufficient for industrial applications. this limits commercial application of graphene. accordingly, it should be modified to be used in flexible electronics. improper crystal structure and defects in the lattice are the most important drawbacks limiting commercial applications of graphene in electronics. to overcome this limitation, mechanical durability of single-atom polycrystalline graphene sheet should be improved as a necessary step for practical use of graphene in soft and flexible electronics. a low-cost simple method consistent with conventional processes should be provided for this purpose. durability of large graphene sheets can be increased to produce a new generation of flexible electronics. a method has been proposed to improve mechanical durability of graphene by chemical bonding of nanoscale packets on the surface of graphene [146]. the organosilane nanopatches are mounted on the graphene surface with a nanometric thickness. nanopatches improve graphene resistance against severe media to enhance graphene applications. nanopatches on the graphene surface increase its mechanical durability when used as an electrode in wearable sensors. furthermore, when graphene is used as an electrode, orientation of semi-conducting organic layers on the surface is controlled, and charge is more effectively injected in organic transistors. this type of graphene can be used in organic field-effect transistors (ofets). using graphene and boron nitride, researchers in [152] produced a two-dimensional field effect transistor. unlike silicon-based field effect transistors, this transistor performance doesn’t decline at high voltages and provides high electron conductivity even when its thickness is reduced to a single layer. researchers have succeeded in making this transistor using hexagonal boron nitride, transition metal dichalcogenides, and graphene 370 h. kardanmoghaddam, m. maraki, a. rajaei plates tied together through van der waals interactions. in constructing these transistors, each section is made up of a thin layer. these layers are designed to be similar in thickness, with no surface roughness, and have bonded using van der waals force. 20. development of nanoelectromechanical switches using graphene the graphene-based nanoelectromechanical switches can be used for electrostatic discharge (esd) protection of electronic devices [147]. the switches consist of two terminals with a gap between them. the gap is placed in the lower conductive substrate and the graphene membrane is placed on the lower substrate. this is a new concept in esd protection of electronic components on chips. according to chen, esd switches have numerous advantages in comparison with conventional pn contact-based esd devices. this passive mechanical switch with a nearly close leakage has a very low parasite capacity. in addition, the switch has a bi-functional polar performance while pn junction-based devices only provide unipolar protection. with a very high mechanical and thermal performance, graphene can be used to produce this type of switches. the switch can be produced by cmos infrastructure through non-uniform aggregation. the cmos-based process proposed in this study can be used to produce nemes esd graphene switches. this method was applied in a clean room, and the results were characterized by transitional linear pulse (tlp). this device can be used to produce a new generation of esd protectors on the chip. 21. use of graphene in the manufacture of cameras graphene image sensors are more sensitive to light than commercial sensors known as cmos and ccd under identical conditions. they also consume less energy than commercial sensors. the use of this type of sensors in surveillance equipment and satellites may cause a great difference. the quality of images decreases by downsizing cameras due to a decrease in image sensor dimensions. the graphene sensor increased camera resolution despite camera downsizing [148]. the use of graphene in complementary metal-oxide semiconductors (cmos) may produce high-resolution low-noise images. this technology allows integration of cameras in small electronic devices. graphene can be used in the production of image sensors. it can also be used as phototransistors in digital image sensors to convert light into an electric current. a digital imaging system was constructed from graphene and quantum dots capable of imaging visible, ultraviolet and infrared lights simultaneously [148]. the sensor was constructed using pbs quantum nano-charges mounted on the graphene sheet. the resulting hybrid system was then connected to a cmos and the whole system was connected to a reading circuit. the resulting high-resolution imaging sensor was sensitive to a wide range of wavelengths from uv at 300 nm, visible light at moderate wavelengths to infrared at 2000 nm. this imaging sensor was able to detect visible and invisible lights simultaneously. the thin graphene layer reduces the size of final product while increasing its resolution. each pixel in the sensor is covered by graphene with a layer of quantum dots on this layer. the dots in this layer absorb light and transfer their electrons to graphene. using this graphene sensors, there is no need to downsize pixel dimensions. the number of pixels is not the only factor determining the imaging quality of a camera, but sensor size also plays a key role in this regard. unlike cmos sensors, increased noise in this new sensor is not a concern. the imaging cameras made with this sensor are able to record images at low-light using infrared graphene-reinforced polymeric nanocomposites in computer and electronics industries 371 waves with a wavelength of 1100-1900 just as night vision cameras. they are also able to record images under normal conditions. the highly sensitive cameras constructed from this type of phototransistors are cost effective and can be easily used in computers, laptops and other electronic devices. 22. conclusion graphene is emergent material that has important role in developing advanced technologies. graphene composites relative to polymer matrix composites or other carbon based composites (composites reinforced with carbon nanotubes or carbon fibers), have higher properties and better performance. in this research we examined reinforced polymer nanocomposites using graphene and recent advancements, properties and applications of these materials in computer and electronic industry. as the application of these nano materials in computer and electronic industry has many added values and economic interest and on the other hand, computer and electronic industry is faced with many challenges and difficulties in its progress path that should be solved. these problems can be solved by using polymer nanocomposites filled with graphene. on the other hand, preparation of graphene with high quality and reasonable price is a problem yet and should be synthesized and produced with new methods. there are different methods for producing graphene reinforced polymer nanocomposites that these methods affect dispersion amount of graphene inside polymer matrix and final properties of composites. complete usage of graphene filled nanocomposites with distribution is related to amount of graphene and its orientation and increases economic saving and producing final material. distribution and orientation of graphene for optimization of structural and practical effectiveness and efficiency is so critical. prevention of random orientation of filler nanoparticles results in producing designed nanocomposites having controlled and exact configurations and on the other hand they are capable of functionalization for creating strong inter surface bonds, between graphene and chemically modified graphene with other materials and this cause they are used in making new computer and telecommunication parts, that nowadays it’s required to examine and study these nanomaterial in computer and telecommunication industry more than before. references [1] s. park and r. s. ruof, “chemical methods for the production of graphenes”, nature nanothechnology, 2009. [2] m.a. xavior and h.g. prashantha kumar, “graphene reinforced metal matrix composite (grmmc): a review”, materials today: proceedings, vol. 4, no. 2, pp. 3334–3341, 2017. [3] w. choi and j. lee, graphene synthesis and applications, crc press taylor & francis group, 2012, pp. 1–223. [4] r.a. vaia and h.d. wagner, “framework for nanocomposites”, materials today, vol. 7, no. 11, pp. 32–37, 2004. [5] d.v. rueger and m.r. kessler, “effect of silane structure on the properties of silanized multiwalled carbon nanotube-epoxy nanocomposites”, polymer, vol. 55, pp. 1854–1865, 2014. [6] s.b. jin, g.s. son, y.h. kim, and c.g. kim, “enhanced durability of silanized multi-walled carbon nanotube/epoxy nanocomposites under simulated low earth orbit space environment”, compos. sci. tech., vol. 87, pp. 224–231, 2013. 372 h. kardanmoghaddam, m. maraki, a. rajaei [7] s. ullah khan, j.r. pothnis, and j.k. kim, “effects of carbon nanotube alignment on electrical and mechanical properties of epoxy nanocomposites”, composite part a: applied science and manufacturing, vol. 49, pp. 26–34, 2013. [8] s. shadlou, e. alishahi, and m.r. ayatollahi, “fracture behavior of epoxy nanocomposites reinforced with different carbon nano-reinforcements”, composite structure, vol. 95, pp. 577–581, 2013. [9] m.m. gallego, m. hernández, v. lorenzo, r. verdejo, m.a. manchado, and m. sangermano, “cationic photocured epoxy nanocomposites filled with different carbon fillers”, polymer, vol. 53, pp. 1831–1838, 2012. [10] j. lingpu, y. shengjiao, j. yimi and w. chunming, “electrochemical deposition of diluted magnetic semiconductor znmnse on reduced graphene oxide/polyimide substrate and its properties”, alloy. compos., vol. 609, pp. 233–238, 2014. [11] x. zhang, m. liu, y. mao, y. xu, and s. niu, “ultrasensitive photoelectrochemical immunoassay of antibody against tumor-associated carbohydrate antigen amplified by functionalized graphene derivates and enzymatic biocatalytic precipitation”, biosensor and bioelectronics, vol. 59, pp. 21–27, 2014. [12] t.d. dao, j.e. hong, k.s. ryu, and h.m. jeong, “supertough functionalized graphene paper as a high-capacity anode for lithium ion batteries”, chemical engineering journal, vol. 250, pp. 257–266, 2014. [13] s. aoyama, y.t. park, w. and macosko, “melt crystallization of poly(ethylene terephthalate): comparing addition of graphene vs. carbon nanotubes”, polymer, vol. 55, pp. 2077–2085, 2014. [14] t. gokkurt, a. durmus, and v. sariboga, “investigation of thermal, rheological, and physical properties of amorphous poly(ethylene terephthalate)/organoclay nanocomposite films”, appl. polym. sci., vol. 129, pp. 2490–2501, 2013. [15] h. kim, a.a. abdala, and c.w. macosko, “thermal analysis of epoxy-based nanocomposites: have solvent effects been overlooked”, macromolecules, vol. 43, pp. 6515–6530, 2010. [16] h. zhang, w. zheng, q. yan, y. yang, j. wang, and z. lu, “electrically conductive polyethylene terephthalate/graphene nanocomposites prepared by melt compounding”, polymer, vol. 51, pp. 1191–1196, 2010. [17] s. bandla and j.c. hanan, “microstructure and elastic tensile behavior of polyethylene terephthalateexfoliated graphene nanocomposites”, mater. sci., vol. 47, pp. 76–82, 2012. [18] m. li and y.g. jeong, “influences of exfoliated graphite on structures, thermal stability, mechanical modulus, and electrical resistivity of poly(butylene terephthalate)”, appl. polym. sci., vol. 125, pp. 53–40, 2012. [19] n.a. kotov, “materials science: carbon sheet solutions”, nature, vol. 442, pp. 254–255, 2006. [20] c.n.r. rao, k. biswas, k.s. subrahmanyam and a. govindaraj, “graphene, the new nanocarbon”, mater. chem., vol. 19, pp. 2457–2469, 2009. [21] c.n.r. rao, a.k. sood, k.s. subrahmanyam and a. govindaraj, “graphene: the new twodimensional nanomaterial”, angew. chem., int. ed., vol. 48, pp. 7752– 7777, 2009. [22] d. cai and m.song, “recent advance in functionalized graphene/polymer nanocomposites”, mater. chem., vol. 20, pp. 7906–7915, 2010. [23] x. li, y. zhu, w. cai, m. borysiak, b. han, d. chen, r.d. piner, l. colombo and r.s. ruoff, "transfer of large-area graphene films for high-performance transparent conductive electrodes", nano lett., vol.9, pp.4359–4363, 2009. [24] t.d. dao, h.i. lee and h.m. jeong, “alumina-coated graphene nanosheet and its composite of acrylic rubber”, colloid. int. sci., vol. 416, pp.38–43, 2014. [25] h.m. seo, j.h. park, t.d. dao, and h.m. jeong, “compatibility of functionalized graphene with polyethylene and its copolymers”, nanomaterials, vol. 129, no. 5, pp. 1–8, 2013. [26] j.t. choi, t.d. dao, k.m oh, h.i. lee, h.m. jeong, and b.k. kim, “shape memory polyurethane nanocomposites with functionalized graphene”, smart mater. struct., vol. 21, 2012. [27] p. fabbri, e. bassoli, s.b. bon, and l. valentini, “preparation and characterization of poly (butylene terephthalate)/ graphene composites by in-situ polymerization of cyclic butylene terephthalate”, polymer, vol. 53, pp. 897–902, 2012. [28] b. shen, w.z. tao, d. lu, and w. zheng, “enhanced interfacial interaction between polycarbonate and thermally reduced graphene induced by melt blending”, compos. sci. tech., vol. 86, pp.109–116, 2013. [29] j. dong, c. yin, x. zhao, y. li, and q. zhang, “high strength polyimide fibers with functionalized graphene”, polymer, vol. 54, pp. 6415–6424, 2013. [30] x. wang, l. song, w. pornwannchai, y. hua and b. kandola, “the effect of graphene presence in flame retarded epoxy resin matrix on the mechanical and flammability properties of glass fiberreinforced composites”, composites part a: applied science and manufacturing, vol. 53, pp. 88–96, 2013. https://www.sciencedirect.com/science/journal/1359835x graphene-reinforced polymeric nanocomposites in computer and electronics industries 373 [31] m.a. rafiee, j. rafiee, z. wang, h. song, z.z. yu and n. koratkar, “enhanced mechanical properties of nanocomposites at low graphene content”, acs nano, vol. 3, pp. 3884–3890, 2009. [32] m.a. rafiee, j. rafiee, i. srivastava, z. wang, h. song, z.z. yu, and n. koratkar, “fracture and fatigue in graphene nanocomposites”, nano micro small, vol. 6, pp. 179–183, 2010. [33] r. verdejo, m. mar bernal, l.j. romasanta and m.a. manchado, “graphene filled polymer nanocomposites”, mater. chem., vol. 21, pp. 3301–3310, 2011. [34] p. steurer, r. wissert, r. thomann and r. mulhaupt, “functionalized graphenes and thermoplastic nanocomposites based upon expanded graphite oxide”, macro. rapid commun., vol. 30, pp. 316– 327, 2009. [35] w. choi and j. lee, graphene synthesis and applications, crc press taylor & francis group, pp. 1223, 2012. [36] c. low, f. walsh, m. chakrabarti, m.a hashim, m.a. hussain, “electrochemical approaches to the production of graphene flakes and their potential application”, carbon, vol. 54, pp. 1–21, 2013. [37] a.k. geim and k.s. novoselov, “the rise of graphene”, nat. mater., vol. 6, pp. 183–191, 2007. [38] c.n.r. rao, k. biswas, k.s. subrahmanyam and a. govindaraj, “graphene, the new nanocarbon”, mater. chem., vol.19, pp. 2457–2469, 2009. [39] c. soldano, a. mahmood and e. dujardin, “production, properties and potential of graphene”, carbon, vol. 48, pp. 2127–2150, 2010. [40] j. paredes, and s. villar rodil, “atomic force and scanning tunneling microscopy imaging of graphene nanosheets derived from graphite oxide”, langmuir, vol. 25, pp. 5957–5968, 2009. [41] m. pumera, "electrochemistry of graphene, graphene oxide and other graphenoids", electrochemistry communications, vol. 36, pp. 14–18, 2013. [42] k.k. sadasivuni, d. ponnamma, s. thomas, and y. grohens, “evolution from graphite to graphene elastomer composites”, progress in polymer science, vol. 39, pp. 749–780, 2014. [43] r. salvatierra, s. domingues, m. oliveira, and a. zarbin, “tri-layer graphene films produced by mechanochemical exfoliation of graphite”, carbon, vol. 57, pp. 410–415, 2013. [44] s. ansari and e.p. giannelis, “functionalized graphene sheet-poly(vinylidene fluoride) conductive nanocomposites”, polym. sci., part b., vol. 47, pp. 888–897, 2009. [45] n.a. kumar, r.r. gaddam, m. suresh, s.r. varanasi, d. yang, s.k. bhatia, x.s. zhao, “porphyringraphene oxide frameworks for long life sodium ion batteries”, journal of materials chemistry a, vol. 5, 13204–13211, 2017. [46] w. lu, j. weng, d. wu, c. wu, g. chen, “epoxy resin/graphite electrically conductive nanosheet nanocomposite”, materials and manufacturing processes, vol. 21, pp. 167–171, 2006. [47] s.s. park and n.j. kim, “study on methane hydrate formation using ultrasonic waves”, ind. eng. chem., vol. 20, pp. 1911–1915, 2014. [48] l.y. choi, s.w. kim, and k.y. cho, “improved thermal conductivity of graphene encapsulated poly(methyl methacrylate) nanocomposite adhesives with low loading amount of graphene”, compos. sci. technol., vol. 94, pp. 147–154, 2014. [49] s. stankovich, d.a. dikin, g.h.b. dommett, k.m. kohlhaas, e.j. zimney, e.a. stach, r.d. piner, s.t. nguyen and r.s. ruoff, “graphene-based composite materials”, nature, vol. 442, pp. 282–286, 2006. [50] d.r. dreyer, s. park, c.w. bielawski and r.s. ruoff, “the chemistry of graphene oxide”, chem. soc. rev., vol. 39, pp. 228–240, 2010. [51] d. kuang, l. xu, l. liu, w. hu and y. wu, “graphene–nickel composites”, applied surface science, vol. 273, pp. 484–490, 2013. [52] a. tchernok, m. krumova, f. johannes t lle, r. m lhaupt and s. meching, “composites from aqueous polyethylene nanocrys tal/graphene dispersions”, macromolecules, vol. 47, pp. 3017–3021, 2014. [53] s. kim, j. seo and l.t. drzal, “improvement of electric conductivity of lldpe based nanocomposite by paraffin coating on exfoliated graphite nanoplatelets”, compos. part a-appl sci, and manufacturing, vol. 41, pp. 581–587, 2010. [54] x. jiang and l.t. drzal, “improving electrical conductivity and mechanical properties of high hensity polyethylene through incorporation of paraffin wax coated exfoliated graphene nanoplatelets and multiwall carbon nano-tubes”, compos part a-appl. s., vol. 42, pp. 1840–1849, 2011. [55] m. h. mohamadzadeh and s. sabury, “graphene oxide-induced polymerization and crystallization to produce highly conductive polyaniline/graphene oxide composite”, j. polym. sci., part a: polym. chem., vol. 52, pp. 1545–1554, 2014. [56] m. fang, k.g. wang, h.b. lu, y.l. yang and s. nutt, “single-layer graphene nanosheets with controlled grafting of polymer chains”, mater. chem., vol. 19, pp. 7098–7105, 2009. 374 h. kardanmoghaddam, m. maraki, a. rajaei [57] p. noorunnisa khanam, a.m. almaadeed, m. ouederni, e. harkin-jones, b. mayoral, a. hamilton, d. sun, “melt processing and properties of linear low density polyethylene-graphene nanoplates composites”, vacuum, vol. 130, pp. 63–71, 2016. [58] t. kuila, s. bose, c.e. hong, m.e. uddin, p. khanra, n.h. kim, and j.h. lee, “preparation of functionalized graphene/linear low density polyethylene composites by a solution mixing method”, carbon, vol. 49, pp.1033–1051, 2011. [59] s. kim, i. do and l.t. drzal, “multifunctional xgnp/lldpe nanocomposites prepared by solution compounding using various screw rotating sys tems”, macromol. mater. eng., vol. 294, pp.196– 205, 2009. [60] s.s. park and n.j. kim, “study on methane hydrate formation using ultrasonic waves”, ind. eng. chem., vol. 20, pp. 1911–1915, 2014. [61] j.y. choi, s.w. kim and k.y. cho, “improved thermal conductivity of graphene encapsulated poly(methyl methacrylate) nanocomposite adhesives with low loading amount of graphene”, compos. sci. technol., vol. 94, pp. 147–154, 2014. [62] w. yang, s. berthou, x. lu, q. wilmart, a. denis, m. rosticher, t. taniguchi, k. watanabe, g. f`eve, j.m. berroir, g. zhang, c. voisin, e. baudin and b. placais, “a graphene zener–klein transistor cooled by a hyperbolic substrate”, nature nano technology, vol. 13, pp. 47–52, 2018. [63] l. chen, g. chen and l. lu, “piezoresistive behavior study on finger-sensing silicone rubber/graphite nanosheet nanocomposites”, adv. funct. mater., vol. 18, pp. 898–904, 2007. [64] k.h. an, s.y. jeong, h.r. hwang and y.h. lee, “enhanced sensitivity of a gas sensor incorporating single-walled carbon nanotube–polypyrrole nanocomposites”, adv. mater., vol. 16, pp. 1005–1009, 2004. [65] j.q. liu, l. tao, w.r. yang, d. li, c. boyer, r. wuhrer, f. braet and t.p. davis, “synthesis, characterization, and multilayer assembly of ph sensitive graphene−polymer nanocomposites”, langmuir, vol. 26, pp. 10068–10075, 2010. [66] j. wang, d. song, s. jia and z. shao, “poly (n, ndimethylaminoethyl methacrylate)/graphene oxide hybrid hydrogels: ph and temperature sensitivities and cr(vi) adsorption”, reac. func. polym., vol. 81, pp. 8–13, 2014. [67] x. qin, q. meng, y. feng and y. gao, “graphene with line defect as a membrane for gas separation: design via a first-principles modeling”, surface sci., vol. 607, pp. 153–158, 2013. [68] f. li, h. yue, z. yang, x. li, y. qin and d. he, “flexible free-standing graphene foam supported silicon films as high capacity anodes for lithium ion batteries”, mater. let., vol. 128, pp. 132–135, 2014. [69] f. liu, y. piao, j. choi and t.s. seo, “three-dimensional graphene micropillar based electrochemical sensor for phenol detection”, biosen. bioel., vol. 50, pp. 387–392, 2013. [70] m. jaroszaewski, j. ziaja, “em shieldingtheory and development of new materials”, research signpost, kerala, 2012. [71] j. liang, y. wang, y. huang, y. ma, z. liu, j. cai and c. zhang, “electromagnetic interference shielding of graphene/epoxy composites”, carbon, vol. 47, no. 3, pp. 922–925, 2009. [72] w.l. song, m. cao, m.m. lu, s. bi, c.y. wang, j. liu, j. yuan and l.z. fan, “flexible graphene/polymer composite films in sandwich structures for effective electromagnetic interference shielding”, carbon, vol. 66, pp. 67–76, 2014. [73] d.a.c. brownson, d.k. kampouris and c.e. banks, “an overview of graphene in energy production and storage applications”, j. power sources, vol. 196, no. 11, pp. 4873–4885, 2011. [74] t. kim, g. jung, s. yoo, k.s. suh, r.s. ruoff, “activated graphene-based carbons as supercapacitor electrodes with macro-and mesopores”, acs nano, vol. 7, pp. 6899–6905, 2013. [75] e. paek, a.j. pak, k.e. kweon, g.s. hwang, “on the origin of the enhanced supercapacitor performance of nitrogen-doped graphene”, j. phys. chem. c, vol. 117, no.11, pp. 5610–5616, 2013. [76] l.l. zhang, r. zhou, x.s. zhao, “graphene-based materials as supercapacitor electrodes”, j. mater. chem., vol. 20, no. 29, pp. 5983–5992, 2010. [77] a.j. pak, e. paek and g.s. hwang, “tailoring the performance of graphene-based supercapacitors using topological defects: a theoretical assessment”, carbon n. y., vol. 68, pp. 734–741, 2014. [78] b.c.b. wood, t. ogitsu, m. otani and j. biener, “first-principles-inspired design strategies for graphene-based supercapacitor electrodes”, j. phys. chem. c, vol. 118, no. 1, pp 4–15, 2013. [79] e. paek, a.j. pak and g.s. hwang, “a computational study of the interfacial structure and capacitance of graphene in [bmim][pf6] ionic liquid”, j. electrochem. soc., vol. 160, no. 1, pp. a1– a10, 2012. [80] s.m. mousavi-khoshdel and e. targholi, “exploring the effect of functionalization of graphene on the quantum capacitance by first principle study”, carbon, vol. 89, pp. 148–160, 2015. graphene-reinforced polymeric nanocomposites in computer and electronics industries 375 [81] m. mousavi-khoshdel, te. argholi and m.j. momeni, “first-principles calculation of quantum capacitance of codoped graphenes as supercapacitor electrodes”, the journal of physical chemistry c, vol. 119, pp. 26290–26295, 2015. [82] z. lin, y. liu, y. yao, o.j. hildreth, z. li, k. moon and c.p. wong, “superior capacitance of functionalized graphene”, the journal of physical chemistry c, vol. 115, pp. 7120–7125, 2011. [83] s. park and r.s. ruoff, “chemical methods for the production of graphenes”, nat. nanotech., vol. 4, pp. 217–224, 2009. [84] p. simon and y. gogotsi, “materials for electrochemical capacitors”, natur. mater., vol. 7, pp. 845– 854, 2008. [85] a.v. murugan, t. muraliganth and a. manthiram, “rapid, facile microwave-solvothermal synthesis of graphene nanosheets and their polyaniline nanocomposites for energy storage”, chem. mater., vol. 21, pp. 5004–5006, 2009. [86] y. zhu, m.d. stoller, w. cai, a. velamakanni, r.d. piner and d. chen, “exfoliation of graphite oxide in propylene carbonate and thermal reduction of the resulting graphene oxide platelets”, acs nano, vol. 4, pp. 1227–1233, 2010. [87] c.z. yuan, l. zhou and l.r. hou, “facile fabrication of self-supported three-dimensional porous reduced graphene oxide film for electrochemical capacitors”, mater. lett., vol. 124, pp. 253–255, 2014. [88] f. tu, s. liu, t. wu, g. jin and c. pan, “porous graphene as cathode material for lithium ion capacitor with high electrochemical performance”, power technol., vol. 253, pp. 580–583, 2014. [89] q. cheng, j. tang, j. ma, h. zhang, n. shinyaa and l. qin, “graphene and carbon nanotube composite electrodes for super capacitors with ultra-high energy density”, phys. chem. chem. phys., vol. 13, pp. 17615–17624, 2011. [90] c. li, x. zhang, k. wang, h. zhang, x. sun and y. ma, “three dimensional graphene networks for supercapacitor electrode materials”, new carbon materials, vol. 30, no. 3, pp. 193–206, 2015. [91] m. chen, h. wang, l. li, z. zhang, c. wang, y. liu, w. wang, j. gao, “novel and facile method, dynamic self-assemble, to prepare sno2/rgo droplet aerogel with complex morphologies and their application in supercapacitors”, acs appl. mater. interfaces, vol. 6, pp. 14327–14337, 2014. [92] h. wang, h. yi, x. chen and x. wang, “one-step strategy to three-dimensional graphene/ vo2 nanobelt composite hydrogels for high performance supercapacitors”, j. mater. chem. a, vol. 2, pp. 1165–1173, 2014. [93] y. he, w. chen, x. li, z. zhang, j. fu, c. zhao and e. xie, “freestanding three-dimensional graphene/mno2 composite networks as ultralight and flexible supercapacitor electrodes”, vol. 7, pp. 174–182, 2013. [94] j. ge, h.b. yao, w. hu, x.f. yu, y.x. yan, l.b. mao, h.h. li, s.s. li and s.h. yu, “facile dip coating processed graphene/mno2 nanostructured sponges as high performance supercapacitor electrodes”, nano energy, vol. 2, pp. 505–513, 2013. [95] c.c. wang, h.c. chen and s.y. lu, “manganese oxide/graphene aerogel composites as an outstanding supercapacitor electrode material”, chem eur, vol. 20, pp. 517–523, 2014. [96] s. wu, w. chen and l. yan, “fabrication of a 3d mno2/graphene hydrogel for high-performance asymmetric supercapacitors”, mater. chem. a, vol. 2, pp. 2765–2772, 2014. [97] t. zhai, f. wang, m. yu, s. xie, c. liang, c. li, f. xiao, r. tang, q. wu, x. lu and y. tong, “3d mno2-graphene composites with large areal capacitance for high-performance asymmetric supercapacitors”, nanoscale, vol. 7, pp. 6790–6796, 2013. [98] w. wang, s. guo, i. lee, k. ahmed, j. zhong, z. favors, f. zaera, m. ozkan and c.s. ozkan, “hydrous ruthenium oxide nanoparticles anchored to graphene and carbon nanotube hybrid foam for supercapacitors”, sci rep, vol. 4, pp. 4452–4461, 2014. [99] j. yuan, j. zhu, h. bi, x. meng, s. liang, l. zhang and x. wang, “graphene-based 3d composite hydrogel by anchoring co3o4 nanoparticles with enhanced electrochemical properties”, phys. chem. chem. phys., vol. 15, pp. 12940–12945, 2013. [100] u.m. patil, s.c. lee, j.s. sohn, s.b. kulkarni, k.v. gurav, j.h. kim, j.h. kim, s. lee and s.c. jun, “enhanced symmetric supercapacitive performance of co(oh)2 nanorods decorated conducting porous graphene foam electrodes”, electrochimica acta, vol. 129, pp. 334–342, 2014. [101] y. xu, x. huang, z. lin, x. zhong, y. huang and x. duan, “one-step strategy to graphene/ni(oh)2 composite hydrogels as advanced three-dimensional supercapacitor electrode materials”, nano research, vol. 6, pp. 65–76, 2013. https://www.sciencedirect.com/science/journal/00134686 https://www.sciencedirect.com/science/journal/00134686/129/supp/c 376 h. kardanmoghaddam, m. maraki, a. rajaei [102] j. ji, l.l. zhang, h. ji, y. li, x. zhao, x. bai, x. fan, f. zhang, r.s. ruoff, “nanoporous ni(oh)2 thin film on 3d ultrathin-graphite foam for asymmetric supercapacitor”, acs nano, vol. 7, pp. 6237–6243, 2013. [103] c. jiang, b. zhao, j. cheng, j. li, h. zhang, z. tang and j. yang, “hydrothermal synthesis of ni(oh)2 nanoflakes on 3d graphene foam for high-performance supercapacitors", electrochimica acta, vol. 173, pp. 399–407, 2015. [104] x. cao, y. shi, w. shi, g. lu, x. huang, q. yan, q. zhang, and h. zhang, “preparation of novel 3d graphene networks for supercapacitor applications”, nano micro small, vol. 7, no. 22, pp. 3163– 3168, 2011. [105] h. wang, z. xu, h. yi, h. wei, z. guo and x. wang, “one-step preparation of single-crystalline fe2o3 particles/graphene composite hydrogels as high performance anode materials for supercapacitors”, nano energy, vol. 7, pp. 86–96, 2014. [106] w. tian, q. gao, y. tan, y. zhang, j. xu, z. li, k. yang, l. zhu, and z. liu, “three-dimensional functionalized graphenes with systematical control over the interconnected pores and surface functional groups for high energy performance supercapacitors”, carbon, vol. 85, pp. 351–362, 2015. [107] j. hao, y. liao, y. zhong, d. shu, c. he, s. guo, y. huang, j. zhong and l. hu, “three-dimensional graphene layers prepared by a gas-foaming method for supercapacitor applications”, carbon, vol. 94, pp. 879–887, 2015. [108] s. liu, j. wu, j. zhou, g. fang and s. liang, “mesoporous nico2o4 nanoneedles grown on three dimensional graphene networks as binder-free electrode for high-performance lithium-ion batteries and supercapacitors”, electrochimica acta, vol. 176, pp. 1–9, 2015. [109] j. liu, w. lv, w. wei, c. zhang, z. li, b. li, f. kangb and q.h. yang, “a three-dimensional graphene skeleton as a fast electron and ion transport network for electrochemical application”, j. mater. chem. a, vol. 2, pp. 3031–3037, 2014. [110] m. kota, x. yu, s.h. yeon, h.w. cheong and h.s. park, “ice-templated three dimensional nitrogen doped graphene for enhanced supercapacitor performance”, power sources, vol. 303, pp. 372–378, 2016. [111] t. echtermeyer, l. britnell, p. jasnos, a. lombardo, r. gorbachev, a. grigorenko, a. geim, a. ferrari and k. novoselov, “strong plasmonic enhancement of photovoltage in grapheme”, nat.commun,. vol. 2, no.1, pp. 458–468 ,2011. [112] s. thongrattanasiri, f. koppens and f. abajo, “total light absorption in graphene”, phys.rev,. lett., vol. 108, 2012. [113] b. zhao, j m. zhao and z.m. zhang, “enhancement of near-infrared absorption in graphene with metal gratings”, appl.phys. lett., vol. 105, pp. 031905, 2014. [114] x. zhu, l. shi, m. schmidt, a. boisen, o. hansen, j. zi, s. xiao and n. mortensen, “enhanced lightmatter interactions in graphene covered gold nanovoid arrays”, nnano. lett, vol. 13, pp. 4690, 2013. [115] m.h. mahdabinezhad, m. pourmahyabadi, “design of graphene based photodetector with high absorption and responsivity”, in proceedings of the 23rd iranian conference on optics and photonics and 9th conference on photonics engineering and technology tarbiat modares university, tehran, iran, 2017. [116] b. chitara, l.s. panchakarla, s.b. krupanidhi and c.n.r. rao, “infrared photodetectors based on reduced graphene oxide and graphene nanoribbons”, advanced materials, vol. 23, pp. 5419–5424, 2011. [117] z. cheng, j. wang, k. xu, h.k. tsang and c. shu, “graphene on silicon on-sapphire waveguide photodetectors”, in proceedings of the conference on laser and electro-optic, 2015. [118] i. wang, z. cheng, z. chen, x. wan , b.q. zhu and h. ki tsang, “high responsivity graphene-on silicon slotwaveguide photodetectors”, nanoscale, vol. 8, no. 27, pp. 13206-11, 2016. [119] l. goykhman, u. sassi, b. desiatov, n. mazurski, “on chipintegrated silicongraphene plasmonic schottky photodetector with high responsivity andavalanche photogain”, nano letters, vol. 16, no.5, pp. 3005–3013, 2016. [120] m.h. mahdabi nezhad and m. pourmahyabadi, “design of graphene based photodetector with high absorption and responsivity”, in proceedings of the 23 rd iranian conference on optics and photonics and 9th conference on photonics engineering and technology tarbiat modares university, tehran, iran, 2017. [121] h. zhu, j. wei, k. wang and d. wu, “applications of carbon materials in photovoltaic solar cells”, j. solar energy materials & solar cells , vol. 93, pp. 1461–1470, 2009. [122] h. choi, h. kim, s. hwang, w. choi and m. jeon, “dye-sensitized solar cells using graphene-based carbon nano composite as counter electrode”, solar energy materials & solar cells, vol. 95, pp. 323–325, 2011. graphene-reinforced polymeric nanocomposites in computer and electronics industries 377 [123] y.j. jeon, j.m. yun, d.y. kim, s.i. naa and s.s. kim, “high-performance polymer solar cells with moderately reduced graphene oxide as an efficient hole transporting layer, solar energy mater”, sol. cells, vol. 105, pp. 96–102, 2012. [124] x. zhengguo, y. yuan, b. yang, j. vanderslice, j. chen, o.d. gerd duscher and j. huang, “universal formation of compositionally graded bulk heterojunction for efficiency enhancement in organic photovoltaics”, advanced materials, vol. 26, no.19, pp. 3068–3075, 2014. [125] a. r. madaria and a. kumar, “large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates their application in touch screens”, nanotechnology, vol. 22, pp. 245201–245208, 2011. [126] w. cai and y. zhu, “large area few-layer graphene/graphite films as transparent thin conducting electrodes”, applied physics letters, vol. 95, pp. 123115–123118, 2009. [127] m.j. large, s.p. ogilvie, s. alomairy, t. vöckerodt, d. myles, m. cann, h. chan, i. jurewicz, a.a. k. king and a.b. dalton, “selective mechanical transfer deposition of langmuir graphene films for highperformance silver nanowire hybrid electrodes”, langmuir, vol. 33, no. 43, pp. 12038–12045, 2017. [128] y.d. kim, h. kim, y. cho, j.h. ryoo, c.h. park, p. kim, y.s. kim, s. lee, y. li, s.n. park, y.s. yoo, d. yoon d, dorgan ve, pop e, heinz tf, hone j, chun sh, cheong h, lee sw, bae mh, park yd, “bright visible light emission from grapheme”, nat nanotechnol, vol. 10, no. 8, pp. 676–681, 2015. [129] y.d. kim, y. gao, r.j. shiue, l. wang, o.b. aslan, m.h. bae, h. kim, d. seo , h.j, choi, s.h. kim, a. nemilentsau, t. low, c. tan, d.k. efetov, t. taniguchi, k. watanabe, k.l. shepard, t.f. hein , d. englund and j. hone, "ultrafast graphene light emitters", nano lett. vol. 18, no. 2, pp.934-940, 2018. [130] s. zhou, k. chen, m.t. cole, z. li, j. chen, c. li and q. dai, “ultrafast field-emission electron sources based on nanomaterials”, adv mater., vol. 31, no. 45, 2019. [131] h. diker, g.b. durmaz, h. bozkurt, f. yeşil and c. varlikli, “controlling the distribution of oxygen functionalities on go and utilization of pedot:pss-go composite as hole injection layer of a solution processed blue oled”, curr. appl.phys., vol. 17, pp. 565–572, 2017. [132] d. todorović, a. matković, m. milićević, đ. jovanović, r. gajić, i. salom, m. spasenović, “multilayer graphene condenser microphone”, 2d materials, vol. 2, no. 4, 2015. [133] q. zhou, j. zheng, s. onishi, m.f. crommie and a.k. zettl, “graphene electrostatic microphone and ultrasonic radio”, in proceedings of the national academy of sciences, 2015, pp. 8942-6. [134] s.t. woo, j.h. han, j.h. lee, s. cho, k.w. seong, m. choi and j.h. cho, “realization of a high sensitivity microphone for a hearing aid using a graphene–pmma laminated diaphragm”, acs applied materials & interfaces, vol. 9, no. 2, pp. 1237–1246 , 2017. [135] r. z.h.m. auliya, m.a. md ali, m.s. rusdi, “graphene mems capacitive microphone: highlight and future perspective”, scientific journal of ppi-ukm, vol. 3, no. 4, pp. 187–191, 2016. [136] j. wu, m. agrawal, h.a. becerril, z. bao, z. liu, y. chen, and p. peumans, “organic light-emitting diodes on solution-processed graphene transparent electrodes”, acs nano, vol. 4, no.1, pp. 43–48, 2010. [137] j. lee, t.h. han, m.h. park, d.y. jung, j. seo, h.k. seo, h. cho, e. kim, j. chung, s.y. choi, t.s. kim, t.w. kim and s. yoo, “synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes”, nat. commun., vol. 7, no. 11791, 2016. [138] j. kim, r. kumar, a.j. bandodkar and j. wang, “advanced materials for printed wearable electrochemical devices: a review”, advanced electronic materials, vol. 3, no. 1, 2017. [139] k. arapov, e. rubingh, r. abbel, j. laven, g. de with and h. friedrich, “conductive screen printing inks by gelation of graphene dispersions”, advanced functional materials, vol. 26, no. 4, pp. 586– 593, 2016. [140] w.j. hyun, e.b. secor, m.c. hersam, c.d. frisbie and l.f. francis, “high-resolution patterning of graphene by screen printing with a silicon stencil for highly flexible printed electronics”, advanced materials, vol. 27, no.1, pp. 109–115, 2015. [141] j.r. windmiller and j. wang, "wearable electrochemical sensors and biosensors: a review", electroanalysis, vol. 25, no. 1, pp. 29–46, 2013. [142] s. majee, m. song, s.l. zhang and z.b. zhang, “scalable inkjet printing of shear-exfoliated graphene transparent conductive films”, carbon, vol. 102, pp. 51–57, 2016. [143] j. ren, c. wang, x. zhang, t. carey, k. chen, y. yin and f. torrisi, “environmentally-friendly conductive cotton fabric as flexible strain sensor based on hot press reduced graphene oxide”, carbon, vol. 111, pp. 622–630, 2017. https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20yd%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20h%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=cho%20y%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=ryoo%20jh%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=park%20ch%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20p%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20ys%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=lee%20s%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=li%20y%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=park%20sn%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=yoo%20ys%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=yoon%20d%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=dorgan%20ve%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=pop%20e%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=heinz%20tf%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=hone%20j%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=chun%20sh%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=cheong%20h%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=lee%20sw%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=bae%20mh%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=park%20yd%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=park%20yd%5bauthor%5d&cauthor=true&cauthor_uid=26076467 https://www.ncbi.nlm.nih.gov/pubmed/26076467 https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20yd%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=gao%20y%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=shiue%20rj%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=wang%20l%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=aslan%20ob%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=bae%20mh%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20h%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=seo%20d%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=choi%20hj%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=kim%20sh%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=nemilentsau%20a%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=low%20t%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=tan%20c%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=efetov%20dk%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=taniguchi%20t%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=watanabe%20k%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=shepard%20kl%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=heinz%20tf%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=englund%20d%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=hone%20j%5bauthor%5d&cauthor=true&cauthor_uid=29337567 https://www.ncbi.nlm.nih.gov/pubmed/29337567 https://www.ncbi.nlm.nih.gov/pubmed/?term=zhou%20s%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/?term=chen%20k%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/?term=cole%20mt%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/?term=li%20z%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/?term=chen%20j%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/?term=li%20c%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/?term=dai%20q%5bauthor%5d&cauthor=true&cauthor_uid=30724407 https://www.ncbi.nlm.nih.gov/pubmed/30724407 https://iopscience.iop.org/journal/2053-1583 https://iopscience.iop.org/volume/2053-1583/2 https://iopscience.iop.org/issue/2053-1583/2/4 https://www.ncbi.nlm.nih.gov/pubmed/?term=zhou%20q%5bauthor%5d&cauthor=true&cauthor_uid=26150483 https://www.ncbi.nlm.nih.gov/pubmed/?term=zheng%20j%5bauthor%5d&cauthor=true&cauthor_uid=26150483 https://www.ncbi.nlm.nih.gov/pubmed/?term=onishi%20s%5bauthor%5d&cauthor=true&cauthor_uid=26150483 https://www.ncbi.nlm.nih.gov/pubmed/?term=crommie%20mf%5bauthor%5d&cauthor=true&cauthor_uid=26150483 https://www.ncbi.nlm.nih.gov/pubmed/?term=zettl%20ak%5bauthor%5d&cauthor=true&cauthor_uid=26150483 http://www.pnas.org/content/early/2015/07/01/1505800112.abstract https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/article/pii/s0008622316309071?via%3dihub#! https://www.sciencedirect.com/science/journal/00086223 https://www.sciencedirect.com/science/journal/00086223/111/supp/c 378 h. kardanmoghaddam, m. maraki, a. rajaei [144] a. quellmalz, a..d. smith, k. elgammal, x. fan, a. delin, m. östling, m. lemme, k.b. gylfason and f. niklaus, “influence of humidity on contact resistance in graphene devices”, acs applied materials & interfaces, vol. 10, no. 48, 2018. [145] k. pan, y. fan,t. leng , j. li, z. xin, j. zhang, l. hao, j. gallop, k.s. novoselov and z. hu, “sustainable production of highly conductive multilayer graphene ink for wireless connectivity and iot applications”, nature communications, vol. 9, no. 1, 2018. [146] b. kang, s.k. lee, j. jung , m. joe, s.b. lee, j. kim, c. lee, and k. cho, “nanopatched graphene with molecular self-assembly toward graphene–organic hybrid soft electronics”, advanced materials, vol. 30, no. 25, 2018. [147] r. ma, q. chen, w. zhang, f. lu , c. wang , a. wang , y. xie and h. tang, “a dual-polarity graphene nems switch esd protection structure", ieee electron device letters, vol. 37, no. 5, pp. 674–676, 2016. [148] s. goossens, g. navickaite, c. monasterio, s. gupta, j.j. piqueras, r. pérez, g. burwell, i. nikitskiy, t. lasanta, t. galán, e. puma, a. centeno, a. pesquera, a. zurutuza, g. konstantatos and f. koppens, “broadband image sensor array based on graphene-cmos integration”, nature photonics, vol. 11, no. 6, pp. 366–371, 2017. [149] american chemical society[acs nano]. available from: https://pubs.acs.org/journal/ancac3[accessed on:15.1.2018] [150] plosone journal. available from: http://journals.plos.org/plosone[accessed on: 15.1.2018] [151] scientific reports[sci rep]. available from: https://www.nature.com/srep/about[accessed on: 15.1.2018] [152] t. roy, m. tosun, j. s.kang, a.b. sachid, s.b. desai, m.k. hettick, c.c. hu and a. javey, “fieldeffect transistors built from all two-dimensional material components”, acs nano, vol. 8, no. 6, pp. 6259–6264, 2014. https://www.ncbi.nlm.nih.gov/pubmed/?term=pan%20k%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=fan%20y%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=leng%20t%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=li%20j%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=xin%20z%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=zhang%20j%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=hao%20l%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=gallop%20j%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=novoselov%20ks%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://www.ncbi.nlm.nih.gov/pubmed/?term=hu%20z%5bauthor%5d&cauthor=true&cauthor_uid=30518870 https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=kang%2c+boseok https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=lee%2c+seong+kyu https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=jung%2c+jaehyuck https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=joe%2c+minwoong https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=lee%2c+seon+baek https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=kim%2c+jinsung https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=lee%2c+changgu https://onlinelibrary.wiley.com/action/dosearch?contribauthorstored=cho%2c+kilwon ../../appdata/local/downloads/vol.30,%20no.%2025 https://ieeexplore.ieee.org/author/38469487600 https://ieeexplore.ieee.org/author/38469487600 https://ieeexplore.ieee.org/author/37085792940 https://ieeexplore.ieee.org/author/37076888400 https://ieeexplore.ieee.org/author/37085794845 https://ieeexplore.ieee.org/author/37085536854 https://ieeexplore.ieee.org/author/37085794597 https://ieeexplore.ieee.org/author/37533615900 https://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=55 https://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=7458214 https://www.nature.com/articles/nphoton.2017.75#auth-1 https://www.nature.com/articles/nphoton.2017.75#auth-2 https://www.nature.com/articles/nphoton.2017.75#auth-3 https://www.nature.com/articles/nphoton.2017.75#auth-4 https://www.nature.com/articles/nphoton.2017.75#auth-5 https://www.nature.com/articles/nphoton.2017.75#auth-6 https://www.nature.com/articles/nphoton.2017.75#auth-7 https://www.nature.com/articles/nphoton.2017.75#auth-8 https://www.nature.com/articles/nphoton.2017.75#auth-9 https://www.nature.com/articles/nphoton.2017.75#auth-10 https://www.nature.com/articles/nphoton.2017.75#auth-11 https://www.nature.com/articles/nphoton.2017.75#auth-12 https://www.nature.com/articles/nphoton.2017.75#auth-13 https://www.nature.com/articles/nphoton.2017.75#auth-14 https://www.nature.com/articles/nphoton.2017.75#auth-15 https://www.nature.com/articles/nphoton.2017.75#auth-16 facta universitatis series: electronics and energetics vol. 33, no 3, september 2020, pp. 327-349 https://doi.org/10.2298/fuee2003327v © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd high frequency common-mode noise in serdes circuits’ optimized interconnections  roxana vladuță 1,2 , lidia dobrescu 2 , nicolae militaru 2 , dragoș dobrescu 2 1esilicon romania, bucharest – district 1, romania 2faculty of electronics, telecommunications and information technology, university politehnica of bucharest, romania abstract. according to the requirements imposed by the new four-level pulse amplitude modulation (pam4) standard for high-speed data transfer and processing, electrical constraints and manufacturing tolerances in integrated electronic packages impose accurate electromagnetic simulations and new s-parameters analysis, saving time and financial resources for next-generation switches, routers or data centers circuits implementation. the complexity of the advanced networking class circuits’ encapsulation substrates massively increases due to the large number of differential signals that it integrates. differential signaling has replaced single-ended transmission in high-speed circuits due to their many advantages, including increased immunity to crosstalk and electromagnetic interference, but common-mode noise due to timing skew or amplitude unbalance differences can still affect them. this work tests five different models, identifies and optimizes the 45° bends, structures that commonly affect the reflections in a differential stripline. then it studies differential transmission lines in stripline topology, implemented in a 12-layered flip-chip package, using s-parameters, inspecting and comparing the common-mode noise. in this way, the paper combines microwave theory with a real chip packaging design in an innovative way, using finite element analysis of electromagnetic field simulation and mixed-mod scattering parameters of differential topologies, towards an optimized structure design. key words: common-mode noise, differential signaling, electromagnetic interference, finite element analysis model, flip-chip package, multilayer circuit board received јune 1, 2020 corresponding author: lidia dobrescu faculty of electronics, telecommunications and information technology, university politehnica of bucharest, romania. (e-mail: lidia.dobrescu@electronica.pub.ro).  mailto:lidia.dobrescu@electronica.pub.ro 328 r. vladuta, l. dobrescu, n. militaru, d. dobrescu 1. introduction the increasing number of devices connected to internet and modern cloud storage impose a growing need to move more data much faster [1]. serializer/deserializer solution, also known as serdes, is used to convert parallel data into serial data, without increasing the number of pins. ieee standards define fast data rates that impose fourlevel pulse amplitude modulation (pam4) signaling [2]. the price that is paid consists in pam4 sensitivity to noise and increasingly susceptibility to electromagnetic crosstalk problems in high-speed designs. advanced packaging styles and a constant reduced area increase the complexity of the designing and verifying processes. next-generation switches and routers impose power scaling, larger i/o bandwidth and a flexible and optimized architecture. 1.1. differential signaling differential signaling is a modern implementation method that enhances high-speed data carrying using two signals, each in its own conductor. a stripline is a transversal electromagnetic (tem) transmission line which uses a flat strip of metal between two parallel ground planes insulated in a dielectric bulk. the advantages of the planar microwave fabrication process impose parallel-stripline for many other applications such as microwave sensors [3]. fig. 1 stripline transmission in differential topology the common method to increase noise immunity in a stripline is to replace the single-ended topology with a differential one as shown in fig. 1, where there are two electromagnetically coupled conductors between the ground planes. high bandwidth differential signals can be transmitted if a uniform cross section down its length ensures constant impedance. the greater the coupling, the more robust to ground bounce noise picked up from environment [4]. the ground plane allows a common mode of propagation to exist together with the desired differential mode signaling, requiring a mixed theoretical approach. high frequency common-mode noise in serdes circuits’ optimized interconnections 329 1.2. chipset encapsulation integrated circuits (ic) encapsulation structure, called package, has both electrical and structural roles. in fact, it is a passive component that adapts the ic conductive elements dimensions to printed circuit boards (pcb) specific ones. it also enables the redistribution of the signals to facilitate the connection of several components on the pcb. the complexity of the ic encapsulation substrate is due to the large number of differential signals that it integrates, thus realizing the interconnection between the integrated circuit and the printed circuit board. the interconnection paths can be seen and analyzed as differential paths. they cannot be realized in the form of straight lines since they will have elements of bypass or they must connect non-aligned structures, so many bends are required. 1.3. propagation issues common-mode reflections generated in differential transmission lines as strip line or microstrip type are due to the route bends and asymmetries, therefore causing signal degradation. the signal integrity issues of bend discontinuities in a high-speed interconnect design can be investigated using circuit simulators. shiue, guo and lin [5] deal with 45° angle instead right-angle bends for commonmode noise reduction. the length of the routes of the differential pair is conventionally measured as a midline of the route. thus, for any bend of the differential pair, the outward path will have a longer length, whereby the propagated signal will have a greater delay [6]. skew is the deviation of propagation delay due to length differences and electrical loading. practical ways of compensating skew have been developed and a parallel-plate patch metal can act as a compensation capacitance [5]. other technological aspects as discontinuities, layer-to-layer variation of the dielectric constant or skew due to glass weave can be also considered [7]. 1.4. paper structure section 1 provides a quick view on interconnections paths from the substrate of an ic package, analyzed as stripline differential topology. it announces specific propagation problems such as common-mode reflections, noise and delays that can be simulated using specific software and can usually be compensated by length matching. this section outlines the structure of the paper in the end. it offers a short overview on this paper subject and topics. section 2 presents transmission lines modeling principles and characterization. mixed-mode s-parameters, as a theoretical base of modeling, are shortly described using electromagnetic-field simulations. section 3 presents ansys hfss simulation methodology and its modeling principles. section 4 shows layout routing rules for package and signal integrity requirements. section 5 presents simplified structures evaluations. section 6 demonstrates optimized structures for common-mode noise reduction. section 7 summarizes the salient points of this work and the state-of-the-art advancements are highlighted. 330 r. vladuta, l. dobrescu, n. militaru, d. dobrescu 2. transmission line modeling and characterization different approaches can be used for modeling the electromagnetic phenomena within the differential transmission line. 2.1. traditional distributed-element circuits models in order to model the differential transmission line (see fig. 2), the lumped-element models with conventional passive electrical elements, exemplified in texts by gray and meyer [8], are replaced with other models containing distributed circuit elements per unit length. in this case, a complex distributed circuit analysis is required [8]. the distributed resistance, inductance, capacitance, and conductance, primary line constants, can model the transmission line as an infinite series of two-port cells, using so-called telegrapher’s equations. fig. 2 equivalent circuit with distributed elements per unit length although these models were initially developed for microwaves, where concentrated constants are difficult to be implemented, bockelman affirms [9] that this method remains still difficult to be applied for measurements or tests in rf and microwave frequency range. 2.2. models using s-parameters scattering parameters (s-parameters) are more suitable for characterizing high-speed circuits at rf and microwave frequencies. mixed-mode s-parameters [9] theory allows a real-mode measurement system and offers a solid based for electromagnetic field simulation. a coupled line pair, line a and line b, over a common ground plane is analyzed. the four ports are not physically ports, but they can be seen as conceptual tools (see fig. 3). high frequency common-mode noise in serdes circuits’ optimized interconnections 331 mixed-mode 2-port physical port 1 physical port 2 adm1 bdm1 acm1 bcm1 adm2 bdm2 acm2 bcm2 sdd11 scc11 sdd21 scc21 sdd22 scc22 fig. 3 mixed-mode two-port device when the s-parameter indices are the same (s11 or s22), this indicates a reflection, because the input and output ports are the same. the mixed s-parameters matrix becomes:         11 12 11 12 21 22 21 22 11 12 11 12 21 22 21 22 1 1 1 2 2 2 1 1 1 2 2 2 dd dd dc dc dm dm dm dd dd dc dcdm dm dmdd dc cm cm cmcd cccd cd cc cc cm cm cmcd cd cc cc s s s sb a a s s s sb a as s b a as ss s s s b a as s s s                                                (1) where: a = direct wave (incident on the port); b = reverse wave (reflected from the port); dm1 and dm2 = differential mode at port 1 and port 2; cm1and cm2 =common-mode at port 1 and port 2; sdd = differential mode s-parameters; scc = common-mode s-parameters; sdc = s-parameters describing the conversion of common-mode waves into differentialmode waves; scd = s-parameters describing the conversion of differential-mode waves into commonmode waves. the differential mode voltage is the difference between two voltages, establishing a signal that is no longer referenced to the ground. the common-mode voltage in a differential topology is the average voltage at a port, so common-mode voltage is the half of the sum of the two voltages. the common-mode current is the sum of the currents and the return current for the common-mode signal flows through the ground plane. mixedmode s-parameters can be measured with a special designed practical system [9]. 332 r. vladuta, l. dobrescu, n. militaru, d. dobrescu usually a channel must match only the characteristic impedance (50ω), but for highspeed transmissions the waveform at the connector output is degraded and only s-parameters complex matrix show reflection/transmission characteristics (amplitude/phase) in the frequency domain. mixed-mode s-parameters also cover mode conversions [10]. this theory using mixed-mode s-parameters can fully characterize a differential circuit, including coupled line systems and it will be used in the electromagnetic field simulation for optimizing the interconnection paths in the ic substrate. it will allow the evaluation of a transmission line both in differential transmission and in common transmission mode, as a main output of a simulated process, in the next section of the paper. 2.3. odd and even propagation mode in a stripline, the useful differential signal is applied at the end of a pair of coupled lines as a potential difference between the two signal conductors and propagates oddly. the presence of the ground conductor, serving as the current return path, makes propagation of the transmission common mode possible. the even-mode signal, also called the commonmode signal, can be expressed as the average of the two amplitudes applied at the end of the coupled lines [4]. 2.4. common-mode return loss high-speed serdes, in wire bond package applications, have clearly specified scc11 parameter, common-mode return loss, and other requirements. common-mode return loss is related to common-mode noise. na, arseneault et al. [11] shows that for a differential pair, common-mode return loss is a measure of common-mode signal reflection from mismatch of common-mode impedance in differential pairs. electromagnetic interference emissions and noise coupling is not strongly related to common-mode return loss. better isolations and better decoupling of power supply noise on reference plans are good solutions to limit electromagnetic interference (emi) caused by common-mode noise. many transmission protocols impose clear limits for both differentialand commonmode reflection. common-mode noise mainly affects the jitter, which has very small margins for pam4 modulation. also, in the case of long reach channels where the signal must be amplified by the receiver, the amplified common-mode noise can cause high overshoot voltages at sensitive receivers. any asymmetries in a differential transmission line produce a common signal that propagates through the device. this mode conversion is a main source of electromagnetic interference (emission/radiation). the electromagnetic compatibility compliance testing is a new condition for next-generation routers and switches at the end of the design cycle [10]. high frequency common-mode noise in serdes circuits’ optimized interconnections 333 3. electromagnetic-field simulations 3.1. 2d electromagnetic-field simulators ansys 2d extractor uses an automatic mesh refinement in order to obtain a highaccuracy solution over broadband frequencies. it uses the finite element method, dividing the whole 2d geometry into arbitrary-sized triangle elements, as shown in fig. 4. fig. 4 meshes for a differential stripline in an electromagnetic-field simulation when modeling structures with nonlinear characteristics, non-uniform meshes are generally used. this software allows smaller size cells in areas that are physically small but very important regarding electromagnetic field, and bigger cells in less complex regions [12], using an adaptive algorithm towards specific desired convergence criteria [13]. in order to identify a differential stripline that respects the adopted principle, 2d electromagnetic software that models its cross section is used. for every mesh element, the maxwell laws are applied in order to calculate the electric passive elements of the line per unit length. the boundary conditions on the interface between two elements of the geometry are automatically applied. based on these conditions and within the desired frequency range, the 2d structure is analyzed electromagnetically. the convergence criterion of the simulation is defined as a tolerance of the error imposed by the user, in this paper having a value of 0.5%. the main result of this 2d simulation is the characteristic impedance of the stripline structure that will be detailed in section 5. 3.2. 3d electromagnetic-field simulators the evaluation of differential stripline transmission lines from the common-mode reflections point of view can be accurately performed using 3d electromagnetic field simulation software that implements the finite element method. ansys hfss (high frequency structure simulator) software is a 3d electromagneticfield simulation tool for designing and simulating high frequency electronic products. the software is recognized for its accuracy by both academia and industry [14], generally used for analysis of three-dimensional microwave structures [15]. in this paper, the working method of ansys hfss simulator is based on the discretization of geometry in a tetrahedron network of arbitrary dimensions according to the geometry to be analyzed, as shown in fig. 5. 334 r. vladuta, l. dobrescu, n. militaru, d. dobrescu fig. 5 simulated interconnects the electromagnetic field is calculated by applying maxwell's laws to a fea (finite element analysis) model. the automatic process adapts the mesh in consecutive steps, refining it so that it correctly captures the gradient of the electromagnetic field quantities and the process continues until the s-parameters or other user-defined quantity, change between two consecutive adaptive steps less than the convergence criterion imposed by the user. the frequency response of the geometry is calculated within a frequency range defined by the user. the s-matrix describing the analyzed multiport can be then postprocessed by ansys hfss as a matrix of mixed-mode s-parameters, allowing the evaluation of the transmission line both in differential and in common transmission mode. 4. integrated circuits layout design the package (pkg) with electrical and structural roles can be realized in wire-bond or flip-chip technology [16]. wire-bonding is a robust technology and its cost is a major advantage. flip-chip's advantages regard lower-inductance power distribution network, reduced switching noise and ground bounce and lower parasitic elements due to the replacement of the highly inductive wire bonds with smaller solder balls to interface the package with the ic. both technologies coexist due to continuous improvements. 4.1. substrate layers the encapsulation of an application-specific integrated circuit (asic) has evolved from wire-bond to flip-chip technologies, the laminated substrate of the capsule acts like a minipcb with a surface of up to 60 mm  60 mm, having between 12 and 16 metal layers. interconnects between the package and the silicon die serve both for electrical connection and as a method of attaching the ic to the substrate, giving it structural stability. the package substrate is a printed wiring harness with the following laminated structure:  the core, a middle dielectric layer with the greatest thickness, ensuring rigidity to the printed wiring.  metallic layers deposited on both sides by the core, as a rule from copper, in which the geometry of the elements of interconnection of the electrical circuit is realized by corrosion: signal paths and power plans.  the build-up dielectric layers deposited to separate the metal layers. the dielectric filling of the corroded copper areas is realized from the same material.  via (vertical interconnect access), vertical elements used to make the connection between the metallic states. a via is made by laser or mechanical drilling of the high frequency common-mode noise in serdes circuits’ optimized interconnections 335 metal and dielectric layers, through which the connection must be made, followed by the plating of the cylinder thus formed or its filling with conductive material – usually copper.  a thinner dielectric layer, called solder-mask is applied over the outer metal layers, which protects copper against oxidation and accidental short-circuiting.  in the connection areas with the ic and the pcb, the solder-mask layer is not applied, thus allowing the bumps and the balls to be joined. the stack of metal and dielectric layers that make up the structure of the printed circuit called substrate, which is the subject of this work, are disposed in 2 solder masks of 20 µm, 12 copper layers of 15 µm and 11 intermediary dielectric build-ups of 30 µm. for differential pairs routing, the first 3 metal layers will be used. the signal leads – paths are created on layer 2 and the reference plane uses layers 1 and 3. frequency modeling of the electric properties of the dielectric, in ansys electromagnetic-field simulation programs integrates the djordjevic-sarkar mathematical model that allows the extrapolation of electrical properties over an entire frequency range starting from the known values at a single frequency point. 4.2. routing rules the correct execution of electronic circuits involves more than their simulation using an electrical computer aided design (e-cad) software environment. it is mandatory to consider the manufacturing process from the design stage as well. although the technology to produce printed circuits is advanced and structures of the order of microns can be manufactured, certain rules are imposed for the dimensions and spacing of the conductive elements. these layout routing rules, as shown in fig. 6, differ from one manufacturer to another, depending on manufacturing methods accuracy or on manufacturing equipment. fig. 6 routing rules the tolerance of the manufacturing processes translates into a percentage by which the physical dimensions of the topology elements of a printed circuit may vary from the nominal ones, required by the engineer that performs the routing. the lower the manufacturing tolerance and the greater the accuracy of the electrical circuit geometry dimensions are, the more expensive the manufacturing and assembly process will be. in the highly competitive environment of the electronic device market, balancing design effort and manufacturing cost becomes critical. 336 r. vladuta, l. dobrescu, n. militaru, d. dobrescu in order to achieve the differential stripline lines in a substrate manufactured with advanced technologies, the following manufacturing rules are required:  minimum width of a path (a): 14 µm;  maximum width of a route: 89 µm;  elements with a constant width greater than or equal to 90 µm are considered planes (f);  minimum spacing between paths (noted a): 14 µm;  minimum spacing between paths and planes (c): 40 µm. 4.3. signal integrity rules the signal integrity refers to the quality of the electrical signals as amplitude and synchronization. as most digital systems use variable or even programmable frequency data transfers, the passive elements that make up the transmission environment are required to comply with signal integrity conditions across the frequency range. for the same reason, the signal integrity requirements for a segment of the transmission channel, in this case the package of an ic, are expressed in the frequency domain, the requirements expressed in the time domain being used to validate the entire transmission channel. for the ic proper functioning, the rules of signal integrity are provided by its designer. considering only the transmission of differential signals, the rules of signal integrity are expressed using five main terms: 1. characteristic impedances the ratio of the amplitudes of voltage and current of the wave propagating along a transmission line, up to 15 ghz frequency domain is simulated as characteristic impedance. the value of differential-mode impedance is twice the value of odd-mode impedance and the value of common-mode impedance is half the value of even-mode impedance. two parallel traces in a pkg substrate are coupled and characteristic differential impedance of 100 ω will be used in simulations of serdes signals. common-mode impedance will be 25 ω for noise. 2. insertion-loss (il) for a transmission line, the signal power loss due to device loss is usually expressed in db. differential attenuation introduced by the package must not exceed 15% of the signal amplitude up to the first spectral component of the highest frequency useful signal of 15 ghz. the insertion s-parameters (s21) should not decrease below -1, 4 db at frequencies lower than 15 ghz in serdes circuits simulations [17]. 3. return-loss (rl) for a transmission line, the power loss in a signal returned/reflected by a discontinuity, usually due to a mismatch of the terminated load or impedance discontinuity across the conductive path is also expressed in db. further referred to as signal reflection, it is expressed by an element of the differential parameter s-matrix (sdd11), tolerated if they fall below a frequency-dependent limit. typical rl values could range from 15 to 60 db. many designers target 10 db as the critical value and try to keep return loss lower than 10db at the desired signal speeds. in most cases, 60 db is more desirable [18]. high frequency common-mode noise in serdes circuits’ optimized interconnections 337 4. crosstalk (xtalk) crosstalk is the mutual influence of two parallel, nearby routed traces. as an undesired phenomenon (an inductive and a capacitive coupling) crosstalk is the effect created in a specific circuit (victim) by the signal transmitted in another circuit (aggressor). it is expressed by specific elements of the differential parameter s-matrix and it has frequency dependent limits in simulations [19]. xtalk perceived as a path-based approach for identifying pairs of pathways that may crosstalk, is used in computation [20], [21]. 5. common mode return-loss (cmrl) reflections of the common mode signal, expressed by the commonly used sparameter scc11, are tolerated if they fall below a specific limit, frequency dependent, in serdes circuits’ simulations [19]. 5. simplified structures evaluations inserting guard traces into a simplified structure (see fig. 7), the cross talk is reduced by coupling the electromagnetic waves to the guard trace. fig. 7 guard traces added to a simplified structure the elements’ dimension for a simplified structure are shown in table 1. table 1 routing rules parameter dimension [µm] metal layer width 15 dielectric width 30 trace width 21 trace separation 90 separation between trace and guard trace 55 guard trace width 90 using the simulation software based on maxwell's equations in the frequency range (1-15) ghz, the capacitance, inductance, and characteristic impedance values are calculated and the parameters of the maximum length of the 10 mm paths and the signal growth time of 14 ps are defined. 338 r. vladuta, l. dobrescu, n. militaru, d. dobrescu 5.1. characteristic impedance for stripline topology as shown in fig. 8, characteristic impedance is frequency dependent. fig. 8 simulated characteristic impedance at 15 ghz, the wavelength becomes twice time greater than the differential pair’s length, so it becomes very important to match the characteristic impedance here, using ansys 2d extractor, in good agreement with the common-mode values and differentialmode impedances from integrity rules given in the previous section. 5.2. noise in a differential pair evaluation a mixed-mode multiport, according to fig. 3, is defined by ports placed at the end of each signal path of the differential pair, considering the input in at the end where the signal is applied and output out the end where the signal is transmitted. the ports used in simulation are placed as se (single-ended) ports of 50 ω standard impedance and the reference to the gnd conductor. in order to highlight the effect of the bends of a differential pair in a package’s structure, the conversion of the differential signal into a common signal is evaluated due to discontinuities introduced in signal propagation path. the common mode signal generated by a discontinuities (bends in this case) will propagate through the conductive structure in the two main directions: once as a commonly reflected signal having the opposite direction to the source differential signal that will be referred as rcd (reflected common-mode signal by conversion from differential mode) and as a common mode signal transmitted in the same direction as the source differential mode signal that will be referred as tcd (transmitted common-mode signal by conversion from differential mode). since data transmission through a serdes interface is purely differential, both at the transmitter and at the receiver, it can be considered the commonly generated signal by differential conversion as a noise that will be referred as cmn (common mode noise). in this paper, the cmn is evaluated due only to the package structure as a sum of rcd and tcd. high frequency common-mode noise in serdes circuits’ optimized interconnections 339 5.3. evaluation of a differential pair with bends the stripline structure can reduce the common-mode noise using a practical routing scheme, based on the same velocity of even-mode and odd-mode signals [5]. using dual back-to-back coupled bends with different angles, keeping the same routing rules for the matched impedance of the stripline differential pair, the same trace length without the significant skew can be maintained [5]. a right angle in a trace is not desired because the capacitance increases in the region of the bend, and the characteristic impedance changes. this impedance change causes reflections. so, right-angle bends in a trace are avoided and they are replaced with at least with two 45° bends, as shown in fig. 9. fig. 9 noise compensation zones in bends based on this principle, four test models with four bends were developed to evaluate the effect of 45˚ bends on the common reflections. in order to facilitate the presentation of the simulation results, the four models, designed as shown in fig. 10, are presented besides the straight model. they will be further referred as a, b, c and d models. the four models with bends are simulated using the same materials, boundary conditions and excitations for the entire frequency range between the dc point and the maximum frequency of the highest spectral component of 45 ghz. model a 1-2.7-1 model b 2-2-1 model c 1.7-1.7-1.7 model d 2-1.3-2 fig. 10 examples of different models with bends investigated 340 r. vladuta, l. dobrescu, n. militaru, d. dobrescu 5.4. differential pair without bends as reference model using an initial 3d simulation for a straight basic structure without bends, the first three s-parameters il, rl and cmrl can be extracted as reference, as shown in fig. 11. fig. 11 differentialand common-mode evaluation for the tested models the commonly used reflection attenuation limit (cmrl) also depicted in fig. 11 describes the common mode reflections generated by a common mode signal. it assumes the condition to be a non-ideal signal, containing both the differential mode component and a common mode noise due to the ic output stage, transmitted through the package. in differential pair structure simulations in frequency domain, outside noise is not determined and the cmrl cannot be interpreted as an effect of the differential pair bends, although in practice they will negatively influence the cmrl. high frequency common-mode noise in serdes circuits’ optimized interconnections 341 fig. 12 mixed-mode evaluation for the tested models the results of common-mode reflected signal converted from differential-mode signal (rcd), common-mode transmitted signal converted from differential-mode signal (tcd) and total common-mode noise generated (cmn) are shown in fig. 12. in the package rcd signal is critical due to its direction into the integrated circuit affecting the entire output buffer, more than tcd signal, seriously attenuated in communication channel consisting of three minimum elements: the ic package that emits the signal, the pcb and the ic receiver package, the most attenuating part remaining the pcb element. 342 r. vladuta, l. dobrescu, n. militaru, d. dobrescu 5.5. differential-mode parameters evaluation the il and rl, or sdd21 and sdd11 parameters, of all four models with bends are similar to the ones of the straight model, because the differential attenuation is mainly influenced by the equivalent resistance of the differential pair and while keeping the impedance controlled routing, length matching between the pair traces is enough to keep reflections below the necessary level. the insertion loss (il) for the first model is slightly different at high frequencies because it has the largest distance (2.7mm) between the phase shift and the correction area. in conclusion, for an ic encapsulation circuit, 45° bends can affect differential transmission if the distance between the phase area and the correction area is closed to the wavelength [22]. 5.6. common-mode parameter evaluation the higher the maximum value of cmrl is, the lower the transmission performance through this model will be. by evaluating the results of the cmrl attenuation versus frequency in fig. 11, all four tested models with 45° bends have a more unfavorable behavior than the straight model. the key decision factor in their overall evaluation is the maximum value over the whole analyzed frequency range. on the graph, the maximum cmrl values are periodically repeated after 8.25 ghz, due to the dimensions of the gnd plane of each model corresponding to the quarter of the wavelength of the frequency resonance, finally 6 frequency areas can be delimited on the graph from fig. 11, mainly linked to the distance between the phase shift and the correction areas. the greater the distance between the two zones becomes, the more the reflections increase, a strong effect is in case of the a model, as the most unfavorable case tested. the most favorable behavior has the c model, with perfect symmetry and an average distance between the two zones, and d model, with a small distance between the zones, although the phase shift and correction segments have the largest length of the tested ones. 5.7. mixed-mode parameters evaluation mixed-mode s-parameters, rcd and tcd, scd11 and scd21 parameters describe signal conversion from differentialto common-mode. the signal resulting from this conversion is added to the noise that can be generated by the ic output stage, triggering a negative chain reaction, which disrupts the useful signal. from fig. 12, the c model has greater rcd values only at high frequencies, above 38 ghz where spectral components have lower amplitude, and the a model can be considered as the worst case. the main elements that can worsen common mode generated reflections are the phase shift zone length and the distance between the two zones. although common mode reflections focus the ic output stage transmitting the signal through the package, the common mode transmitted signal due to the differential conversion affects the ic input stage that receives it as an additional input signal. thus, the two mixed s-parameters values, rcd and tcd are equally important for a proper functioning of a communication channel through the serdes pam4 interface. according to the classification of the average tcd results, the main factor influencing the conversion of a differential signal into a common-mode signal is the distance between the phase shift area and the correction area [23]. the shorter this distance is, the generated phase shifted noise has a shorter propagation time and the less tcd becomes, therefore high frequency common-mode noise in serdes circuits’ optimized interconnections 343 preferable, noticing that if the two zones do not have equal lengths, the results will be more unfavorable, even if the distance between them is smaller than in the asymmetric case. the total noise commonly generated by the 45˚ bends in the differential conversion is calculated as the sum of rcd and tcd and are depicted in fig. 12 and summarized in table 2. table 2 cmn models classification model phase zone [mm] distance [mm] corr. zone [mm] cmn average [db] straight 49.70 d 2 1,3 2 48.71 b 2 2 1 47.56 c 1.7 1.7 1.7 46.48 a 1 2.7 1 45.25 as the average tcd values are generally lower, the same rule about the distances between the two zones stays as the main element that influences the total common noise (cmn) generated by conversion from a differential signal. in conclusion, limiting the attenuation of reflection, cmn reduction, can be achieved in two ways:  common impedance matching, in order not to generate common mode noise reflections inserted into the package and further into the transmission channel by the ic output stage;  optimization of the zones with impedance discontinuity, in printed circuits, that means the 45˚ bends optimization. the bends optimization can be done considering the three main zones: the phase shift zone, the correction zone and the distance between them. in order to limit common-mode noise generation by differential conversion, which overlaps the common-mode noise inserted by the ic, it is primarily intended that the distance between the two zones to be as small as possible and their lengths to be as close as possible or even the same. 6. common mode noise in optimized interconnects paths the conclusions of previous section are verified for a real package case, shown in fig. 13. the medium-sized package has 17 mm sides and the stack up previously described in section 4. the package can encapsulate a 4 mm side ic and performs the interconnection between the ic and the pcb of 24 serdes pam4 channels with a 56 gbps per channel rate. the package geometry has been designed using e-cad software, allegro package designer and then automatically recognized in electromagnetic-field simulation software, preserving the accuracy of the geometric details. the differential pair in the real package requires 45˚ bends both to reach its connection to the pcb, a point that is not aligned with the differential signal output ic area and to bypass passive components assembled on the package such as decupling capacitors symbolized using the c letter in fig. 13. besides limiting the space where the differential pairs can be designed due to the passive components mounted on the package surface, the routes are conditioned to bypass the groups of vias that link the passive components mounted on the package and the power distribution network (pdn) on the lower metal layers, usually below the dielectric core. 344 r. vladuta, l. dobrescu, n. militaru, d. dobrescu in the real package paths electromagnetic simulation, the signal conductors’ geometry and the gnd conductor that serves as a reference plane for the routes are identically maintained. a major simplification consists in keeping only the coplanar guard elements from the metallic layer, where the paths of the differential pair are realized in, to highlight the main effect of the bending technique on the common-noise. in fig. 14 the real routing has a length of 7.12 mm, indicating the signal traveling through the ic package, from input (in), towards the pcb, (out). fig. 13 real package fig. 14 initial stripline routing this simplified model will be referred as initial in the electromagnetic-field simulations shown in fig. 15 and in fig. 16, in contrast with the optimized real model which is named pkg. the initial model is also depicted in fig. 17, where the phase shift zone and the correction zone are identified. initial model’s greater number of 45˚ bends compared to all simplified structures from section 5, disturbs the insertion loss linear trend versus frequency, as shown in fig. 15. the 45˚ bends have no negative effect on reflection as differential rl shows. due to the reduced length compared to the five models from section 5, the cmrl have similar values. in fig. 16, rcd has greater values till 20 ghz and tcd has higher values than the equivalent model, but low enough to be attenuated along the transmission channel. noting that the negative effect of 45˚ bends on total noise is commonly pronounced at frequencies up to 20 ghz, the differential pair optimization becomes a true necessity. the initial pair, shown in fig. 17 is optimized in fig. 18. this consists in changing the dimensions of several zones in order to reduce the common reflected signal and transmitted by differential conversion. the initial differential pair dimensions are shown in table 3 and they are compared with the final dimensions of the optimized structure shown in fig. 18. by this optimization it was intended that the differential pair should have the smallest distance between the phase shift area and the correction area and a smaller number of bends of 45˚. in order to reduce the number of 45˚ bends, a compromise was needed with respect to the length of the correction area segment, which became longer. high frequency common-mode noise in serdes circuits’ optimized interconnections 345 table 3 real package bends zones dimensions element initial dimensions [mm] optimized dimensions [mm] straight segment 0.9 0.7 phase shift d1 0.8 1.0 d1 – c1 distance 1.4 0.9 correction zone c1 1.4 3.3 straight segment 0.3 0.8 45˚ bend – d2 – – d2 – c2 distance 1.5 – straight segment 0.82 – fig. 15 differential and common mode evaluation for the initial and real package 346 r. vladuta, l. dobrescu, n. militaru, d. dobrescu due to the changes made to optimize the differential pair, the length of the pair changed to 6.7 mm. the improvement of the behavior of the differential pair in frequency was noticed only in terms of the common and mixed mode s-parameters. fig. 16 mixed-mode evaluation for the initial and real package from the point of view of transmitting a signal or a common-mode noise, the commonmode reflections are improved at high frequencies, over 38 ghz, in the optimized case compared to the original case as shown in the last graph in fig. 16. because the distance between the phase shift and correction zones was smaller after optimization, the rcd was reduced. the common mode signal cmn transmitted in the same sense as a source high frequency common-mode noise in serdes circuits’ optimized interconnections 347 differential mode signal, tcd, is greatly attenuated due to the optimization of the number of bends that the source differential signal encounters in its path (see fig. 18). fig. 17 initial structure for real stripline routing fig. 18 optimized structure 7. conclusions the paper analyzed the common-mode noise effects due to 45˚ bends in differential transmission lines. the study focused the stripline differential transmission lines, from an ic encapsulating circuit, for high-speed data flow transmitted through a serdes pam4 interface. the 45˚ bends are mandatory in package design to interconnect the integrated circuit with the pcb, linking points that cannot be aligned, bypassing passive components, decoupling capacitors, mounted on the surface of the package. up to 15 ghz in order to ensure the signals integrity, it was enough to balance the differential pair routes lengths, neglecting the signal conversion from differential to common mode. this conversion between the two transmission modes is a negative effect introduced by discontinuities in the differential pair. the study started by identifying a differential pair structure with coplanar elements and adapted differential impedance, using electromagnetic modeling and simulation. using previously identified dimensions for the stripline structure with impedance adaptation, five differential pairs test models on average length about 10 mm in flip-chip encapsulation circuit have been designed: a straight model as reference and four different models including 45˚ double bends with three focused main zones: the phase shift zone, the correction zone and the distance between them. the five test models were analyzed in frequency domain using 3d electromagnetic simulation. differential, common-mode and mixed-mode s-parameters frequency dependence, as graphical results, were compared with operating requirements according to the ic manufacturer up to 45 ghz. these models were also evaluated from common-mode noise generated by 45˚ bends perspective, expressed as mixed-mode parameters: common-mode reflections due to a differential mode source signal, scd11 or rcd, and as common-mode signal transmitted in the same sense as the source differential mode signal, scd21 or tcd. their sum, the total common noise cmn was also investigated. comparing the results for the five test models it was concluded that the main factor that negatively influences the generation of a common mode noise by conversion from differential mode is the large distance between the phase shift zone and the correction zone. the next factor is the symmetry between them. this generated common-mode noise, cmn, propagating along the differential paths has an unfavorable behavior at high frequencies. 348 r. vladuta, l. dobrescu, n. militaru, d. dobrescu these conclusions were verified by optimizing a stripline differential pair from a real package with a length of 7.12 mm. the total generated common noise, cmn, has been evaluated by comparing the results of its 3d electromagnetic simulations with the results of the initial model. because the noise generated by the bends is predominantly reflected towards the ic output buffer, it was decided to optimize the differential pair by reducing the distance between the phase shift and the correction zones and by reducing the number of bends, from 6 to 4 bends. comparing the initial model results versus the optimized solution in a real package, an improvement in terms of the total common noise generated by differential conversion over the entire frequency range up to 45 ghz has been obtained. future developments will focus 45˚ bends effects on the crosstalk between the different pairs on the adjacent metal layers. in designing multi-layered flip-chip packages, although the output and the input signals are placed on different layers, they share a metal layer that serves as a reference plane for both classes of differential signals. thus, the common noise generated by the bends in the differential pairs by the un-attenuated output signals can be electromagnetically coupled through the common ground panel with the input signals that have been attenuated due to the transmitted channel. references [1] a. mutschler, higher performance helps smooth the gap between analog and digital, but it adds a number of new twists. available: https://semiengineering.com/wrestling-with-high-speed-serdes/. [2] ieee electronics packaging society, heterogeneous integration roadmap. 2019, available: https://eps.ieee.org/images/files/hir_2019/hir1_ch02_hpc.pdf. [3] d.a. nesic, i. radovic, “parallel-strip line stub resonator for permittivity characterization”, facta universitatis, series: electronics and energetics, vol. 33, nno. 1, pp. 61–71, march 2020. [4] e. bogatin, signal and power integrity – simplified. new jersey: prentice hall, 2009, pp. 475–553. [5] g.h. shiue, w.d. guo, c.m. lin and r.b. wu, “noise reduction using compensation capacitance for bend discontinuities of differential transmission lines”, ieee trans. advanced packaging, vol. 29, pp. 560–569, august 2006. [6] e. kunz, j.y. choi, v. kunda, l. kocubinski, y.li, j.r. miller, g.j. blando and i. novak, “sources and compensation of skew in single-ended and differential interconnects”, signal integrity journal, april 2017. [7] s.c. thierauf, understanding signal integrity. artech house, 2011, pp. 88–89. [8] p.r.gray and r.g.meyer, analysis and design of analog integrated circuits, 3rd. ed. new york: wiley, 2009, pp. 291–292. [9] d. e. bokelman, “combined differential and common-mode scattering parameters: theory and simulation,” ieee trans. microw. theory and techn., vol. 43, pp. 1530–1539, july 1995. [10] keysight technologies, “s-parameter measurements, basics for high-speed digital engineers”. available: http://literature.cdn.keysight.com/litweb/pdf/5991-3736en.pdf, may 2019. [11] n. na, m. arseneault, k. yonehara, h. hu, d. zwitter, e.m. wolf, k. srinivasan, c. cox and r. anderson, “common mode return loss consideration in wirebond packaging for high speed serdes links”, in proceedings of the ieee electrical performance of electronic packaging, scottsdale, az, usa: world scientific, 2006. [12] m. kostic, n. doncov, z. stankovic, j. paul, “numerical compact modeling approach of dispersive magnoelectric media based on scattering parameters”, facta universitatis, series: electronics and energetics, vol. 33, no. 1, pp.73–82, march 2020. [13] ansys, “2d extractor solver option”. available: https://www.ansys.com/products/electronics/option-2dextractor-solver. [14] ansys hfss, available: https://www.ansys.com/products/electronics/ansys-hfss, july 2019. [15] a.s. tatarenko, d.v. snisarenko, m.i. bichurin, “modeling of magnetoelectric microwave devices”, facta universitatis, series: electronics and energetics, vol. 30, no. 3, pp. 285–293, september 2017. https://semiengineering.com/wrestling-with-high-speed-serdes/ https://eps.ieee.org/images/files/hir_2019/hir1_ch02_hpc.pdf high frequency common-mode noise in serdes circuits’ optimized interconnections 349 [16] l. ammann, “the package interconnect selection quandary”, eetimes, 2003, available: https://www.eetimes.com/the-package-interconnect-selection-quandary/#. [17] d. r. stauffer, j. trinko meckler, m. sorna, k. dramstad, c. r. ogilvie, a. mohammad and j. rockrohr “high speed serdes devices and applications”, springer, 2008. [18] timbercon, “connector return loss“, available at: https://www.timbercon.com/resources/glossary/connector-return-loss/. [19] 58g & 112g pam4 & nrz dsp-based long-reach serdes family in 7nm, available at: https://www.esilicon.com/products/high-performance-networking-computing-ip/serdes. [20] a.n. tegge, n. sharp and t.m. murali, “xtalk: a path-based approach for identifying crosstalk between signaling pathways”, bioinformatics, vol. 32, no. 2, pp. 242-251, january 2016. [21] freescale semiconductor, “high speed layout design guidelines, application notes“, available at: https://www.nxp.com/docs/en/application-note/an2536.pdf. [22] z. popovic and e.f, kuester, “principles of rf and microwave measurements”, 2017, pp. 1, available at: https://ecee.colorado.edu/~ecen4634/4634-lectures-labs.pdf. [23] texas instruments, “high speed layout guide, texas instruments application report”, 2017, available at: http://www.ti.com/lit/an/scaa082a/scaa082a.pdf. 8376 facta universitatis series: electronics and energetics vol. 35, no 3, september 2022, pp. 333-348 https://doi.org/10.2298/fuee2203333а © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper lighting – the way to reducing electrical energy demand in university buildings in bangladesh md. yousuf ali, imran khan, mehedi hassan department of electrical and electronic engineering, jashore university of science and technology, jashore-7408, bangladesh abstract. lighting is one of the dominant electricity demand factors in the building energy sector and has huge potential for demand reduction. however, concerning the efficacy of energy consumption, this potential energy-saving option entails further investigations, particularly for developing countries. this study addresses the issues of an efficient lighting system design for educational institutions with particular attention to classroom and laboratory lighting systems for a university in bangladesh as a case study. measurements show that during the daytime, under clear and average sky conditions both rooms received sufficient natural light (>300 lx) for educational activities, whereas under an overcast sky, only 50% space receives sufficient natural light. at night, the installed fluorescent tube lights illuminance level was found insufficient (<300 lx) for educational activities. the inefficient lighting system design was found to be the main reason for this illuminance level. simulation results reveal that light emitting diode (led) tube lights with a maintenance factor of 0.8 could save 10,080-15,120 kwh, 91,929-137,894 bdt (1usd=84bdt), and 6,753-10,130 kgco2-eq, energy, cost, and, greenhouse gas emissions respectively per year for the classrooms. key words: lighting efficiency, electricity demand, energy saving, lighting system design, lighting energy demand. 1. introduction lighting is responsible for system peak demand in both developed and developing countries. for instance, it was found that about 12% of demand was attributed to evening peak lighting in winter in new zealand [1]. thus, reducing energy demand from lighting could be beneficial for electricity authorities. lighting demand could be managed in three different ways: (i) use of ‘new more efficient equipment’, (ii) ‘utilization of improved lighting design practices’, and (iii) ‘improvements in lighting control systems to avoid energy waste for unoccupied and daylight hours’ as identified in [2]. the focus of this received october 6, 2021; revised december 14, 2022; accepted december 22, 2022 corresponding author: imran khan department of electrical and electronic engineering, jashore university of science and technology, jashore7408, bangladesh. e-mail: ikr_ece@yahoo.com, i.khan@just.edu.bd 334 m. y. ali, i. khan, m. hassan study is the second option, that is, to explore the potential of efficient lighting system design for university buildings, focusing on bangladesh as a case study. lighting systems in educational institutions have significant impacts on learners’ cognitive performance [3] and emotional behavior [4]. in educational institutional lighting systems at universities, about 42% of electricity is consumed for lighting purposes only [5]. one study showed that significant amounts of energy, cost, and indirect greenhouse gas (ghg) emissions could be reduced if the existing fluorescent lamps were replaced with more efficient ones in the university of malaya [5]. martirano (2011) proposed two different smart controls, namely switching and dimming, for the lighting systems in two classrooms in the university of rome, sapienza, to save energy, cost, and to increase the efficiency of the overall system [2]. in sweden, the effectiveness of the lighting control system in an educational building in lund was investigated and they found that about 30% of the total lighting energy consumption was responsible for standby energy use and in extreme cases, this could be as high as 55% [6]. a recent study in greece found that through direct current light emitting diode (led) and daylight harvesting systems, annual lighting energy consumption could be reduced from 90.5 kwhp/m2 to 0.55 kwhp/m2 for a typical classroom in a public school [7]. an energy audit for two brac university buildings in dhaka, bangladesh, found that 28% to 45% energy reduction is possible if the existing lighting systems could be replaced by more efficient ones [8]. the government of bangladesh provides subsidies in electricity sector because the cost of electricity increases significantly during system peak hours [9]. studies shows that there are many factors responsible for this peak demand, such as the number of occupants, use of rice cookers, and air conditioners [10]. one of the major contributors to the evening peak demand in bangladesh is lighting [11]. the lighting load is one of the potential demand driving factors in educational buildings [5], and reducing this demand would be helpful for the grid and ghg emission reductions due to electricity generation [12]. the energy efficiency and conservation master plan (eecmp) of bangladesh estimated the potential of 1,862 gwh per year energy saving from lighting load in the country [11]. the plan indicates that the use of more efficient lights such as led would be helpful to achieve this energy saving. the present lighting energy consumption of about 15% would be reduced to 7.5% [11]. however, how much energy that could be saved from educational institutions has not been identified, and this is essential in order to identify the potential energy saving from this sector. thus, the main goal of this study is to reveal the limitations, scope, and potential of energy saving options from efficient lighting system design in an institutional building in one of the least developed countries. this study has taken into account the jashore university of science and technology (just) campus in bangladesh as a case study. more specifically, it considers efficient lighting system design for the classrooms and laboratories of just academic buildings, taking into account natural and artificial lighting along with many other parameters, such as reflectance factors. this study is novel for a number of reasons: first, for the authors, this is the first study that has explored the potential of efficient lighting system design for educational institutions in bangladesh, a least developed country. although the study particularly focused on bangladesh as a case study, the findings could be applicable to other developing countries. second, this study reveals the limitations of educational lighting system design in least developed countries. lighting – the way to reducing electrical energy demand in university buildings in bangladesh 335 2. data and method for this analysis, practical lux in the rooms was measured using luxmeter uni-t ut383 [illuminance measurement: 0-199999 lux ± (4%+8); resolution: 1 lux; sampling rate: 2/s]1. at the same time, the simulation was conducted using dialux evo 8.2 software. although there are many software available for lighting simulation (e.g., relux, btwin), dialux evo 8.2 software was used for the simulation as it was found to be an effective tool in designing an efficient lighting system with the help of a complete database [13]. this software is able to take into account both natural and artificial lighting for simulation purposes. many previous studies also used this lighting simulation software such as [14], [15]. the methodology used for this study is illustrated by the following sequence of events: (i) the test room measurements are taken into consideration to develop the grid dimensional frame for measuring the lux of the rooms. (ii) the lux of the test rooms is measured experimentally at the pre-defined grid positions through the luxmeter. (iii) with the same room-measurements, the software tool dialux evo 8.2 is used to measure the lux of the test rooms. (iv) the step-(ii) and (iii) are repeated further for different lighting conditions (i.e., clear sky, overcast sky, average sky, and at night). (v) finally, the simulation results and the measurement samples are computed, compared, and analyzed to design an effective lighting system. the classroom (room#836) and laboratory (room#837) in the academic building are measured and the positions of the doors and windows are properly identified. the grid dimension of the measurement samples is considered to be 1.5 m to 1.5 m with a measuring-plane height of 0.8 m, satisfying the en 12464-1 standard [16]. for every sample, the measurement procedures are almost instant and take approximately 30 minutes to complete the total measurements. hence, lighting conditions are nearly stable for the sample values. for the simulation, this measurement data is utilized. using the luxmeter, lux is measured at different positions in these rooms under different natural lighting conditions, such as clear sky and overcast sky [17]. according to [18] these lighting conditions are: ▪ clear sky: ‘clear sky varies according to the altitude and azimuth of the sun, is brighter and closer to the sun and attenuates when moving away from it. the brightness of the horizon is between these two extremes.’ that is a cloudless sky. the measurement is taken on 14th september 2019 at 1 pm local time. ▪ overcast sky: ‘this type of sky is completely covered by clouds and the view of the sun is completely impeded. under a very overcast condition, there is little to no direct lighting and the values of global and diffuse illuminance are very close’. for this weather conditions, we considered a cloudy day, i.e., 24th september 2019 at 1:44 pm (local time). 1 https://www.uni-t.cz/en/p/luxmeter-uni-t-ut383 (accessed on 12-jun-2020) https://www.uni-t.cz/en/p/luxmeter-uni-t-ut383 336 m. y. ali, i. khan, m. hassan ▪ average/intermediate sky: ‘this is a type of sky found between the clear and the overcast skies.’ that is average weather conditions. the lux is measured on 17th september 2019 at 1 pm (local time). ▪ at night: no natural light is present at this condition. this measurement is taken on 17th september 2019 at 7:10 pm local time. finally, all these measured and simulated results are compared and the factors that have an impact on illumination are identified. this is to be noted that the specific dates and times mentioned above are merely considered for capturing suitable measurement samples under different lighting conditions with diverse weather. at the same time, the computations are also performed with relevant samples measured at level 7 of the academic building. the geometric properties of the test-rooms (classroom and laboratory) along with the technical specifications of the luminaries are given in table 1. for an efficient lighting system design simulation, we used led tube light (philipsll512x 1xled50s/835 nb) and compared it with fluorescent tube light (philips tcs460 1xtl5-32w hfp d8-vh). for both the cases, the power of the luminaries is found to be 6.5 w/m2. this comparison is made, as led is becoming popular nowadays due to its low energy consumption, although most of the existing lights in university campuses in bangladesh are fluorescent tube lights. the detailed technical specifications for these two lights are also provided in table 1. for all the artificial lighting simulation we used a maintenance factor (mf) of 0.8. the mf is a product of different parameters as shown in eq. (1). for further details of each of the parameters see [19]. mf = lld × ldd × aft × of × svv × bf × fsd (1) where, mf = maintenance factor, lld = lamp lumen depreciation, ldd = luminaire dirt depreciation, aft = ambient fixture temperature, of = optical factor, svv = supply voltage variation, bf = ballast factor, fsd = fixture surface depreciation. another crucial parameter in lighting system design is the reflectance factor. it is defined as, ‘the ratio of the flux actually reflected by a sample surface to that which would be reflected into the same reflected-beam geometry by an ideal (glossless), perfectly diffuse (lambertian), completely reflecting standard surface irradiated in exactly the same way as the sample2. in general terms, it is a measure of usable visible reflected light that is reflected from different surfaces in a room when illuminated by a light source. for this simulation, the reflectance factors for the laboratory were considered to be ceiling 50%, walls 75%, and floor 50% and for the classroom, these were ceiling 50%, walls 65%, and floor 50% (based on the color of the surfaces) [20]. note that the reflectance factors of the surfaces should be chosen carefully as the simulation result will be different with variations in this factor. 2 https://www.ies.org/definitions/reflectance-factor-r/ (accessed on 18-jun-2020) https://www.ies.org/definitions/reflectance-factor-r/ lighting – the way to reducing electrical energy demand in university buildings in bangladesh 337 table 1 test-room properties and technical specifications of light used for the simulations. test-room properties type classroom laboratory level l-7 (room#836) l-7 (room#837) geometry floor area: 88 m2 floor to ceiling height: 3.5 m floor area: 44 m2 floor to ceiling height: 3.5m glazing area: 28 m2 orientation: south west area: 14 m2 orientation: south west fabric floor: concrete wall: plaster wall with paint ceiling: concrete with paint floor: concrete with plastic floor mat wall: plaster wall with paint ceiling: concrete with paint technical specifications of light used for the simulations lamp parameters lamp model philipsll512x 1xled50s/835 nb philips tcs460 1xtl5-32whfp d8-vh lamp flux (lm) 4700 3250 total flux (lm) 4693 2920 luminous efficacy (lm/w) 130 81 correlated color temp. [cct](k) 3000 3500 color rendering index [cri] 99 80 light output ratio [lor] (%) 100 90 total power (w) 36 36 lamp type baten type baten type 338 m. y. ali, i. khan, m. hassan 3. result and analysis according to the bangladesh national building code (bnbc), the illuminance level in classrooms or laboratories should be at least 300 lx3. the measured illuminance levels at different positions in the classroom for different natural lighting conditions are shown in fig. 1. there are 16 luminaries in the classroom and 8 luminaries in the laboratory. they are uniformly placed at a longitudinal distance of 3 feet and a breadthwise distance of 8 feet from each other [21]. except for the overcast sky and at night, the other two natural lighting conditions are more than sufficient for the classroom. on the other hand, for the overcast sky lighting condition, half of the classroom receives sufficient natural light and the other half requires artificial lighting [see fig. 1 (c)]. notably, at night, the existing lighting system is unable to provide sufficient illuminance levels to provide for reading or writing activities [see fig. 1 (d)]. (a) (b) (c) (d) fig. 1 measured illuminance level in the classroom at different positions for: (a) clear sky, (b) average sky, (c) overcast sky, and (d) at night (fluorescent tube light was used). although the simulation results for clear sky and average sky lighting conditions show sufficient light in the classroom, the illuminance level varies from the measured values as evident from figs. 1 and 2. one of the reasons might be the maintenance factor (mf), which is a combination of many different parameters as shown in eq. (1). 3 http://www.dpp.gov.bd/upload_file/gazettes/39201_96302.pdf (accessed on 14-nov-2021) http://www.dpp.gov.bd/upload_file/gazettes/39201_96302.pdf lighting – the way to reducing electrical energy demand in university buildings in bangladesh 339 (a) (b) 340 m. y. ali, i. khan, m. hassan (c) (d) fig. 2 simulated illuminance level for the classroom at different positions for: (a) clear sky, (b) average sky, (c) overcast sky, and (d) at night [philips-tcs460 1xtl532w hfp d8-vh]. lighting – the way to reducing electrical energy demand in university buildings in bangladesh 341 for the overcast sky condition, the simulation results are partially in line with the measured values, particularly for the window side. the reason might be the position of the classroom. in particular, the window side is completely open and receives sufficient natural light, but the opposite side does not. a corridor and other rooms are situated on this side of the room. thus, the measured light (through luxmeter) shows the actual scenario, whereas the simulation result shows theoretical value. in terms of night lighting simulation, the result shows sufficient light (≥300 lux) but in actual measurement, it varies significantly. this variation is predominantly due to the use of poor-quality tube lights in the classroom, whereas in our simulation, we used philipstcs460 1xtl5-32w hfp d8-vh light, which is suitable for first class lighting with a clean, distinctive design. a similar result was also obtained for the laboratory as depicted in figs. 3 and 4. (a) (b) (c) (d) fig. 3 measured illuminance level in the laboratory room at different positions for: (a) clear sky, (b) average sky, (c) overcast sky, and (d) at night. during the overcast sky and at night the classrooms and laboratories require artificial lighting. at the same time, the measured illuminance levels in both rooms indicate that the lights used are not efficient as typical tube lights with ballasts. a more efficient lighting system would be designed with led tube lights. 342 m. y. ali, i. khan, m. hassan fig. 4 simulated illuminance level for the laboratory room at different positions for: (a) clear sky, (b) average sky, (c) overcast sky, and (d) at night [considering philipstcs460 1xtl5-32w hfp d8-vh]. lighting – the way to reducing electrical energy demand in university buildings in bangladesh 343 (a) (b) (c) (d) fig. 5 simulated illuminance level for the classroom with: (a) 16 typical tube lights, (b) 12 led tube lights, and laboratory room with (c) 8 typical tube lights, and (d) 8 led tube lights. here, typical tube light: philips-tcs460 1xtl5-32w hfp d8vh and led tube lights: philips-ll512x 1xled50s/835 nb. 344 m. y. ali, i. khan, m. hassan evidently, if 12 led tube lights were used instead of 16 regular tube lights, the illuminance level that could be obtained from the former is better than the latter for the classroom [see figs. 5 (a) and (b)]. although the number of led tube lights could not be reduced for the laboratory, the illuminance level improved significantly from the illuminance level with typical tube lights [see figs. 5 (c) and (d)]. it can be seen from table 2 that the cost of led light is higher than typical tube lights. however, about 25% of energy and cost-saving can be achieved from this led lighting system compared with typical tube lighting for the classroom. the average illuminance level was increased by 115 lx. in contrast, no energy or cost-saving was observed for the laboratory. nonetheless, with an extra expenditure of 1,840 bdt, an additional 239 lx was achieved. table 2 cost-benefit analysis sl. no. type led tube light typical tube light for classroom 1. price (bdt*) 350 (average unit priceonly for light) 350×12 = 4,200 120 (average unit price-only for light) 120×16 = 1,920 2. average illuminance level (lx) 535 420 3. energy consumption (kwh/year) 520-830 700-1,100 4. energy cost (bdt/kwh) flat rate for commercial and office consumers 9.12 (unit price) 9.12 (unit price) 5. total cost (bdt/year) 520×9.12 = 4,742.4 (min) 830×9.12 = 7,569.6 (max) 700×9.12 = 6,384 (min) 1100×9.12 = 10,032 (max) 6. benefits: energy and cost saving 180 270 kwh/year 1,641.6 – 2,462.4 bdt/year -- for laboratory 1. price (bdt) 350 (average unit priceonly for light) 350×8 = 2,800 120 (average unit priceonly for light) 120×8 = 960 2. average illuminance level (lx) 564 325 3. energy consumption (kwh/year) 350-550 350-550 4. energy cost (bdt/kwh) flat rate for commercial and office consumers 9.12 (unit price) 9.12 (unit price) 5. total cost (bdt/year) 350×9.12 = 3,192 (min) 550×9.12 = 5,016 (max) 350×9.12 = 3,192 (min) 550×9.12 = 5,016 (max) 6. benefits: quality of light increased illuminance level (564 – 325 = 239 lx) -- * bangladeshi currency, 1 usd = 84 bdt lighting – the way to reducing electrical energy demand in university buildings in bangladesh 345 there is a total of 41 rooms on each floor (approximately 2,600 square meter) in the academic building (nine-storied) and they are located face-to-face, of which, 15 and 26 are classrooms and laboratories, and offices, respectively. of the 15 classrooms and laboratories, eight are similar to the room shown in fig. 1, and the other seven rooms are as depicted in fig. 3. the academic building is west-facing and nine-storied, with an auditorium and a large exam hall on the ground and top floor, respectively. although there are few classrooms and laboratories, in estimating the energy and cost-saving, the ground and top floors were excluded. there were eight rooms on each floor from which it is possible to save energy and cost through this led lighting system. the total number of potential classrooms for this purpose would be 56 (8×7) and the total energy-saving per year would be between 10,080 kwh and 15,120 kwh. this type of led lighting system could save from bdt 91,929.6 to bdt 137,894.4 per year. with respect to ghg emission reduction due to this energy saving, it was estimated that 6,753 to 10,130 kgco2-eq could be saved per year by avoiding fossil-fueled electricity generation. for this estimation, the average yearly carbon intensity of 670 gco2-eq/kwh was considered for bangladesh [12], [22]. 4. discussion personal communication with the non-academic and academic staff members of many different public universities in bangladesh reveals that almost every university in the country uses typical fluorescent tube lights in their classrooms and offices. clearly, the use of led lights in these educational institutions is capable of saving electrical energy. the use of led not only saves energy but also offers economic and environmental benefits. university students found that led light is more attractive, efficient, stimulating, comfortable, and cutting-edge technology compared to fluorescent light [4]. after life expiration, normal fluorescent tubes could be harmful to the environment and human health as they contain phosphor and mercury. due to the lack of proper waste management systems in least developed countries, expired fluorescent tube lights are a major threat to the environment, as outdated light manufacturing materials such as mercury could mix with soil and water. on the contrary, led tubes do not have these chemicals. ballast is also required for the operation of fluorescent tubes, which not only adds to the cost of the lamp but is also responsible for the typical buzzing noise. often, fluorescent tube lights become dull and flicker frequently, whereas led tube lights do not have these problems. although led offers many advantages over typical fluorescent tube lights, the cost of the former is about three times higher than the latter. the overall efficiency of led lighting systems depends on many parameters such as reflectance factors. we varied the reflectance factor of ceiling, walls, and floor with a mf of 80%, and the results are presented in table 3. notably, an effective optimization between the ceiling, walls, and floor color is required to gain maximum lux output from a lighting system in a room. for different colors, the reflectance factors are different. although the reflectance factors for these three surfaces are recommended in the developed world [23] for efficient lighting system development, in the least developed and developing world they are rarely seen. 346 m. y. ali, i. khan, m. hassan table 3 illuminance level variation due to different reflectance factors of the surfaces for the classand laboratory room. sl. no. ceiling rf (%) walls rf (%) floor rf (%) classroom average (lx) laboratory average (lx) 1. 75 75 75 604 453 2. 75 75 50 564 437 3. 50 75 50 535 424 4. 50 75 16.3 503 405 5. 50 75 25 501 409 6. 50 50 50 491 399 7. 50 75 12.5 491 404 8. 25 75 50 489 402 9. 12.5 75 50 474 395 10. 50 50 16.3 470 389 11. 50 25 50 467 383 although led lighting systems offer several benefits over fluorescent tube lights in educational institutions, the implementation of this efficient design faces several barriers. first, the lack of information. the initial cost of led is indeed higher than that of fluorescent tube lights, and the lifecycle saving from the led lighting system is frequently not taken into account by the proper authority due to the absence of available information. second, the lack of environmental awareness. in developing and least developed countries, one of the primary uses of electricity is for lighting and consumers are not aware of electricity generation. the negative impact of fossil-fueled electricity generation and its consequences on the environment and human health thus receive less attention. third, rigidity to change. often the government and the authorities emphasize procuring electricity from known suppliers at a cheap rate, but these suppliers are most often unable to supply energy-efficient goods due to a comparatively high initial price. moreover, the staff involved in this procurement process is not well informed about the advantages of energy-efficient options. fourth, the lack of energy management (i.e., demand side management) strategies. in developed countries, most educational institutions, predominantly universities, have their own demand side management strategies to reduce energy consumption towards sustainable development. this type of strategy is completely absent in educational institutions, mainly due to the lack of research in this field in least developed countries [24]. finally, the lack of technical expertise in lighting system design. during planning, construction, and the interior design of any building, most often priority is given to civil engineers and architects. lighting system design is usually completed by the local electrical technician who has zero knowledge of lighting efficiency factors. to overcome these barriers, policymaking needs to be revised or developed. some recommendations for these changes include: ▪ awareness and development of procurement staff through different training and programs, so that they can make optimal decisions regarding efficiency and costs while procuring new lighting systems. these awareness programs must include environmental and sustainable development issues. lighting – the way to reducing electrical energy demand in university buildings in bangladesh 347 ▪ to obtain proper information regarding energy-efficient lighting and its benefits, consultation with experts in this field would be an effective approach. an energy audit by a professional could also be helpful for this. ▪ for educational institutional lighting system design, a lighting system expert or lighting engineer should be employed during the planning and construction phases of the building. this is crucial as there are many parameters that need to be considered for a lighting system design [25]. ▪ every educational institution should launch demand side management schemes for their institute for effective utilization of energy resources, including lighting systems. ▪ the government of the country should develop regulations regarding the use of more efficient lighting system design and usage at educational institutions. ▪ at the initial stage, each institution should run a pilot project for a more efficient lighting system design, and consider the project’s outcome. 5. conclusion in this study, a simulation exercise and practical measurement of lighting levels inside an educational building located in bangladesh with the aim of understanding how a careful design of the lighting system may help reduce electricity needs and guarantee visual comfort was carried out. to overcome the deficiencies of the existing system, a led-based efficient lighting system was proposed. the results show that 25% of energy and cost per year could be saved from this type of lighting system. although the proposed led-based lighting system has higher initial costs than the typical fluorescent tube system, it offers long-term economic and environmental benefits. the lifetime of an led tube light is almost twice that of a typical fluorescent tube light. furthermore, the former does not contain any hazardous metals such as mercury, whereas the latter does. for energy efficient lighting system design, the quality of light is equally important as the quantity of light, that is, increasing the number of lights is not necessarily a better option. maximizing the use of daylight in conjunction with artificial lighting is another potential alternative to reducing energy demand in buildings, which must be taken into account during any lighting system design for educational institutions. acknowledgement: this work was supported by the jashore university of science and technology under the research project grant. references [1] c. dortans, m. w. jack, b. anderson and j. stephenson, "lightening the load: quantifying the potential for energy-efficient lighting to reduce peaks in electricity demand", energy effic., vol. 13, pp. 1105–1118, 2020. [2] l. martirano, "lighting systems to save energy in educational classrooms", in proceedings of the 10th international conference on environment and electrical engineering. rome, 2011, pp. 1–5. [3] o. keis, h. helbig, j. streb and k. hille, "influence of blue-enriched classroom lighting on students’ cognitive performance", trends neurosci. educ., vol. 3, pp. 86–92, 2014. [4] n. castilla, c. llinares, f. bisegna and v. blanca-giménez, "emotional evaluation of lighting in university classrooms: a preliminary study", front. archit. res., vol. 7, pp. 600–609, 2018. 348 m. y. ali, i. khan, m. hassan [5] t. m. i. mahlia, h. a. razak and m. a. nursahida, "life cycle cost analysis and payback period of lighting retrofit at the university of malaya", renew. sustain. energy rev., vol. 15, pp. 1125–1132, 2011. [6] n. gentile and m. c. dubois, "field data and simulations to estimate the role of standby energy use of lighting control systems in individual offices", energy build., vol. 155, pp. 390–403, 2017. [7] l. t. doulos, a. kontadakis, e. n. madias, m. sinou and a. tsangrassoulis, "minimizing energy consumption for artificial lighting in a typical classroom of a hellenic public school aiming for near zero energy building using led dc luminaires and daylight harvesting systems", energy build., vol. 194, pp. 201–217, 2019. [8] r. rayhana, m. a. u. khan, t. hassan, r. datta and a. h. chowdhury, "electric and lighting energy audit: a case study of selective commercial buildings in dhaka", in proceedings of the ieee international wie conference on electrical and computer engineering, dhaka, 2015, pp. 1–4. [9] i. khan, "household factors and electrical peak demand: a review for further assessment", adv. build. energy res., vol. 15, no. 4, pp. 409–441, 2021. [10] i. khan, "a temporal approach to characterizing electrical peak demand: assessment of ghg emissions at the supply side and identification of dominant household factors at the demand side", phd thesis, university of otago, 2019. [11] eecmp, "energy efficiency and conservation master plan up to 2030", government of bangladesh, dhaka, 2015. [12] i. khan, "importance of ghg emissions assessment in the electricity grid expansion towards a lowcarbon future: a time-varying carbon intensity approach", j. clean. prod., vol. 196, pp. 1587–1599, 2018. [13] a. castillo-martinez, j. a. medina-merodio, j. m. gutierrez-martinez, j. aguado-delgado, c. depablos-heredero and s. otón, "evaluation and improvement of lighting efficiency in working spaces", sustainability, vol. 10, no. 1110, pp. 1–16, 2018. [14] s. bunjongjit and a. ngaopitakkul, "feasibility study and impact of daylight on illumination control for energy-saving lighting systems", sustainability, vol. 10, no. 4075, pp. 1–22, 2018. [15] f. salata et al., "maintenance and energy optimization of lighting systems for the improvement of historic buildings: a case study", sustainability, vol. 7, pp. 10770–10788, 2015. [16] en 12464-1. lighting of work places part 1: indoor work places. european committee for standardization, 2011. [17] a. meresi, "evaluating daylight performance of light shelves combined with external blinds in southfacing classrooms in athens, greece", energy build., vol. 116, pp. 190–205, 2016. [18] m. b. piderit, c. cauwerts, and m. diaz, "definition of the cie standard skies and application of high dynamic range imaging technique to characterize the spatial distribution of daylight in chile", rev. la construcción., vol. 13, no. 2, pp. 22–30, 2014. [19] lightsearch, "light loss factors", lightsearch.com, 2020. [20] approximate reflectance values of typical building finishes, decrolux.com.au, 2018. [21] n. makaremi, s. schiavoni, a.l. pisello, f. asdrubali and f. cotana, "quantifying the effects of interior surface reflectance on indoor lighting", energy procedia., vol. 134, pp. 306–316, 2017. [22] i. khan, "temporal carbon intensity analysis: renewable versus fossil fuel dominated electricity systems", energy sources, part a recover. util. environ. eff., vol. 41, no. 3, pp. 309–323, 2019. [23] n. makaremi, s. schiavoni, a. l. pisello, f. asdrubali, and f. cotana, "quantifying the effects of interior surface reflectance on indoor lighting", procedia eng., vol. 134, pp. 306–316, 2017. [24] i. khan, "energy-saving behaviour as a demand-side management strategy in the developing world: the case of bangladesh", int. j. of energy and env. engin., vol. 10, no. 4. pp. 493-510, 2019. [25] i. khan, "a survey-based electricity demand profiling method for developing countries: the case of urban households in bangladesh" journal of building engineering., vol. 42, no. 102507, pp. 1-9, 2021. facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. 53-69 https://doi.org/10.2298/fuee2101053d © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper assessment of electrical interference on metallic pipeline from hv overhead power line in complex situation rabah djekidel, sid ahmed bessedik, abdechafik hadjadj laboratory for analysis and control of energy systems and electrical systems lacosere, laghouat university (03000), algeria abstract. sharing corridors between high voltage alternating current (hvac) power lines and metallic pipelines has become quite common. voltages can be induced on pipelines from hv power lines, which may cause a risk of electric shock to the operator and serious corrosion damage on metallic pipelines. this paper aims to examine the capacitive coupling between aerial metallic pipelines and hv power lines in perfect parallelism case and in general situation which is formed by parallelism, approaches and crossings, using a combination of charge simulation method and artificial bee colony (abc) algorithm. the electric field at the pipeline's surface and the induced voltage on the pipeline are strongly affected by the pipeline separation distance. the presented simulation results are compared with those obtained from the admittance matrix analysis, a good agreement has been obtained. key words: charge simulation method (csm); artificial bee colony algorithm (abc), capacitive coupling, h-v overhead power line, aerial pipelines 1. introduction aerial and buried metallic pipelines are typically designed to share common corridors for long distances with hv overhead power lines, the electric and magnetic fields emitted by these hv power lines result in ac interferences to metallic pipelines located in close proximity. therefore, in many cases, the adjacent metallic pipelines are subjected to the impact of high induced ac voltages and currents [1-6]. there are three different mutual interferences, capacitive, inductive and conductive coupling. these electrical interferences present three main subjects of concern, a risk of electrocution for intervention agents of the pipeline, a damage of the pipeline’s insulation coating, a risk to the integrity of the pipeline received june 24, 2020; received in revised form december 24, 2020 corresponding author: djekidel rabah electrical engineering department, university of amar telidji of laghouat, bp 37g route of ghardaïa, laghouat 03000, algeria e-mail: rabah03dz@live.fr https://context.reverso.net/traduction/anglais-francais/are+typically+designed+for https://context.reverso.net/traduction/anglais-francais/over+long+distances 54 r. djekidel, s. bessidek, a. hadjadj and its associated protective equipment, which puts in many cases the need to make a careful verification of these induced voltages levels and to adopt in some cases mitigation systems and safety measures [1-6]. in simple case, where the metallic pipeline runs perfectly in parallel situation with the conductors of the hv power line, this parallel exposure is termed a perfect parallelism. generally, for the complex situation, the exposure length of the zone of ac interference influence is composed by parallelism, approaches and crossings [1]. in this regard, the purpose of the present paper is to assess the ac induced voltages due to capacitive coupling between the hv power lines and adjacent aerial metallic pipelines that are located in the same corridor in perfect case of parallelism, and in complex situation. the ac induced voltage assessment will be done using the charge simulation method (csm), this technique accuracy depends strongly on the number and location of the both simulating charges and the contour points. in order to solve this major constraint, the artificial bee colony algorithm (abc) is one of the most commonly used evolutionary algorithms for solving these optimization problems [7, 8]. the performance of the adopted hybrid technique will be verified by a comparison with results obtained by the admittance matrix analysis. 2. capacitive coupling mechanism only metallic pipelines installed above ground are subject to the capacitive coupling from the hv power line. the capacitive coupling is produced by the electric field strength due to the hv power line by inducing electric charges in the aerial metallic pipeline. it is a voltage divider formed by the capacitance between the hv overhead power line and the aerial pipeline, which is insulated from the ground, in series with the capacitance between the aerial pipeline and the adjacent earth, as shown in the fig. 1 below [1,5,9,10]. fig. 1 electrostatic coupling from a hv power line to a metallic pipeline 3. charge simulation method (csm) in this technique, the real distributed charges on the surface of a conductor are replaced by a system of discrete fictitious charges arranged inside the conductor. the values of these fictitious charges are evaluated by satisfying the boundary conditions at a number of selected points called contour points on the surface of the conductor. once these values of the fictitious charges are known, the potential of any point in the region outside the conductors can be determined using the superposition principle as follows [9-17]. http://context.reverso.net/traduction/anglais-francais/will+be+verified assessment of electrical interference on metallic pipeline from hv overhead power line… 55 1 cn i ij j j v p q = =  (1) where nt is the number of discrete fictitious charges and pij, called the potential coefficient, means the potential at point (i) caused by a unit charge of qj. it depends on the relative distance between the contour point (i) and the fictitious charge (j), which can be expressed by the following equation [9-17]. 2 2 2 2 0 ( ) ( )1 ln 2. . ( ) ( ) i j i j ij i j i j x x y y p x x y y  − + + = − + − (2) where, (xi, yi): coordinates of the boundary contour point; (xj, yj): coordinates of the discrete fictitious charge. firstly, the values of the fictitious charges are determined by solving the linear system given in equation (3) below [9-17]: 1[ ] [ ] .[ ]j ij ciq p v−= (3) where [pij] is the potential coefficients matrix; [qj] is the column vector of discrete fictitious charges; [vci] is the column vector of known potentials at the contour point (boundary conditions). after calculating the values of the fictitious charges, we choose then nc several verification points located at the contour of the conductors, and we calculate the new electrical potential vvi given by the simulation charges, the relative error calculated between this new calculated electrical potential and the real potential applied to the phase conductors vci represent the accuracy of the simulation. the simulation is acceptable if this relative error value is less than the selected precision. if not, the simulation procedure should be repeated by changing the number and/ or the position of the simulation charges [9-17]. in electric field calculation due the hv power line; each conductor of the power line is considered as an infinite line type charge. the two-dimensional (2-d) coordinates of the fictitious charges and contour points in the cross section of the conductor/pipeline are shown in fig. 2 [9,10,16,17]: fig. 2 2-d arrangement of simulation charges and contour points for the line conductor and the metallic pipeline the general equations of the coordinates of contour points and fictitious charges are obtained very simply using the following two formulas [9,10,16,17]. 56 r. djekidel, s. bessidek, a. hadjadj 0 0 2. cos ( 1) 2. sin ( 1) k k k k x x r k n y y r k n   = +   −      = +   −    (4) where, 1 2 , ,r r if k i r if k j= = = 0y is the vertical coordinates of conductors and metallic pipeline above ground, x0 is the horizontal coordinates of conductors and metallic pipeline. the components of the electric field are calculated using the superposition principle of all the vector components of this electric field. for a cartesian coordinate system, the horizontal and vertical components ex and ey of the electric field for a number of nt discrete fictitious charges would be given by [9-17]. 2 2 2 2 10 2 2 2 2 10 1 2. . ( ) ( ) ( ) ( ) 1 2. . ( ) ( ) ( ) ( ) t t n j j x j j j j j j n j j y j j j j j j x x x x e q x x y y x x y y y y y y e q x x y y x x y y     = =   − −  = −    − + − − + +         − +   = −   − + − − + +        (5) where, (x,y) are the coordinates of the observation point; (xj,yj) are the coordinates of the discrete fictitious charges. the resulting strength of the electric field at the observation point p is obtained by the sum of the intensities of the horizontal and vertical components, it can be written in the form [9-17]. 2 2 res x ye e e= + (6) under steady state condition of the hv power line, the ac induced voltage on the metallic pipeline due to the fictitious charges is determined using equation (7) given below [1,12]. 2 2 2 2 10 ( ) ( )1 .ln 2 ( ) ( ) tn j j ind j j j j x x y y v q x x y y  =  − + +  =  − + −    (7) when a person touches this metallic pipeline, the human body is charged and undergoes an electric shock, the discharge current that would flow through its body is given by the following relation [1, 12,18]: ind shock p p dv i j c l dt =    (8) where, lp is the length of the metallic pipeline exposed to the capacitive coupling (electrostatic coupling); cp is the metallic pipeline’s capacitance to earth per unit length is given by the inverse of the pipeline potential coefficient given above. if the discharge current magnitude is higher than the admissible exposure limit authorized by the international standards iec 60479-1:2005 in steady state conditions at industrial frequency of 50 hz, which equal to 10ma for adult males [1,19], it is required assessment of electrical interference on metallic pipeline from hv overhead power line… 57 to earthed the metallic pipeline through a low resistance rs to reduce the discharge current below the acceptable limit, this earthing resistance must be lower than[1,5,12,14]: 1 body s r r  − (9) where, rbody is the body resistance;  is the ratio ( ) i / ishock admß = . in accordance with the american standard ieee 80: 2000, the overall resistance of the human body is typically taken equal to a value of 1000 ω[1,20 ]. 4. general situation in general situation (complex situation) of parallelism between an overhead hv power line and metallic pipeline, the area of influence is generally made up of three different cases: parallelism, approaches and crossings. this situation is illustrated in fig. 3. fig. 3 zone of influence in this case, the distance separating the metallic pipeline, or a section of the metallic pipeline, and the different conductors of the overhead hv power line is no longer constant. two such situations are illustrated in fig. 4. fig. 4 conversion of non-parallel exposures to parallel exposures between a hv power line and a metallic pipeline: (a) oblique exposure, (b) crossing exposure in both cases, the non-parallel pipeline exposure can be converted to a perfect parallelism where the aerial pipeline is parallel to the hv power line and is at an equivalent distance from the hv power line given by the following equation [1,18]: 58 r. djekidel, s. bessidek, a. hadjadj 1 2.eqx x x= (10) with, 1 2 1 3 3 x x   (11) where, xeq is the geometric mean distance to the hv power line and x1 and x2 are the minimum and maximum distances of the metallic pipeline to the hv power line. the resulting ac voltage of the metallic pipeline to earth can be evaluated as the average of the voltages in each section weighted by its length to the pipeline’s complete length as follows[1,18 ]: ( ) 1 1 . n p p i i i v v l l = =  (12) where, vp is the ac induced voltage per unit length in section i; li is the length of section i; n is the number of sections of the aerial pipeline; l is the complete length of the zone of influence. 5. artificial bee colony (abc) for improving the simulation accuracy in charge simulation method (csm), the artificial bee colony (abc) is proposed in order to find the optimal position and number of both discrete fictitious charges and contour points. the artificial bee colony algorithm was introduced by dervis karaboga in 2005 for continuous optimization problems, it is a recent metaheuristic algorithm inspired by the natural pattern of honey bee behavior in foraging. the artificial bee colony contains three groups, scouts, onlookers and employed bees. in the abc algorithm, the initial solution population consists of a sn number of food sources generated randomly in the search space, each food source vmi is generated according to the following equation [7,8,21,22]: ( )mi mi mi mi kiv x x x= + − (13) where, xk is a randomly selected candidate solution (m k), k is a randomly selected parameter index; mi is a random number within the range [-1,1]. each food source is associated with a fitness function which characterizes the amount of nectar; this value is calculated according to the following equation (14) [7,8,21,22]. 1 ( ) , ( ) 0 1 ( ) m m m m m m fit x f x f x = + (14) the choice of a food source is carried out in a probabilistic manner by evaluating the probability pm, which depends on the nectar content of this food source, this probability is determined as follows [7,8,21,22]: assessment of electrical interference on metallic pipeline from hv overhead power line… 59 1 ( ) ( ) m m m sn m m m fit x p fit x = =  (15) finally, if the solution is abandoned, then, a new solution xm will be produced randomly by the scout bees using the following expression [7,8,21,22]: (0,1)*( )m i i ix l rand u l= + − (16) where, rand (0,1) is a random number within the range [0, 1], ui and li are the upper and lower bound of the solution space of objective function. the objective function used in this method is based on the relative error; its form is given by the following equation [9,10,16,17]: 1 ( , )1 nt c v t fi i i t ci v v n r of n v= − =  (17) where, vvi is the real voltage which is subjected the phase conductors of the hv power line; vci is the new electrical voltage obtained by the verification points (check points); nt is the total number of verification points. 6. admittance matrix method for problems related to electrical charges, the pipeline ac voltage to earth due to the capacitive coupling for a given pipeline exposure length with the high voltage (hv) overhead power lines can be assessed using the admittance matrix technique, the resulting matrix consisting of the self and mutual admittances of the hv overhead power line conductors and aerial metallic pipeline. the advantages of this approach are that it is very simple and quite easy to be implemented; it can process very fast and provides an accurate solution. for a balanced (symmetrical) three phase ac power system with an aerial pipeline under steady-state conditions of the hv power line (the three phases have the same amplitude and are phase shifted by120◦), the power line admittance per phase per unit length is obtained from the following formula [18,23]: 1[ ] [ ]y j p −=   (18) where, p is the potential coefficients matrix (the inverse of impedance to earth per unit length). the ac currents in the hv power system are represented in the matrix form as follows, [ ] [ ] [ ]i y v=  (19) 60 r. djekidel, s. bessidek, a. hadjadj the resultant matrix of shunt admittance per unit length for the three-phase system with the ground wires and aerial metallic pipeline is given by applying the following system of equations [18,23]: . c cp cgc c p pc p pg p g gc gp g g y y yi v i y y y v i y y y v             =                  (20) where, the subscripts 'c', 'p', and 'g' represent the three phase conductors, pipeline and ground wires, respectively. the matrix can be reduced by eliminating the earthed ground wires, by replacing the current (ig =0) in equation (20), giving [18]: ' ' ' ' . c c pc c p ppc p y yi v i vy y      =            (21) with, . .' ' . .' ' , , cg gc cg gp c c cp cp g g pg gc pc cp pc pc p p g g y y y y y y y y y y y p y y y y y y p y  = − = −    = − = −   (22) for an aerial insulated pipeline by substituting (ip=0) in equation (21), it can be deduced from this simplification the pipeline ac voltage to earth due to capacitive coupling with the hv power lines, which is expressed by the equation below[18]:   1 ' '. .p pc p cv y y v −      = −      (23) where, vc are the known three-phase voltages to earth of the hv overhead power line. 7. results and discussions we consider in this study a 400 kv ac overhead power transmission line arranged in single horizontal configuration, with an aerial isolated metallic pipeline in close proximity under operating conditions for two types of situations. the first presents the simple situation (perfect parallelism between the hv overhead power line and the aerial metallic pipeline), and the second presents the general situation (the complex case) as illustrated in fig. 5. the physical data and the geometric coordinates for the hv power line are shown in fig. 6. assessment of electrical interference on metallic pipeline from hv overhead power line… 61 fig. 5 representation of situation between hv overhead power line and aerial pipeline, (a) case of perfect parallelism, (b) case of general situation fig. 6 single circuit overhead hv horizontal configuration with an aerial pipeline at first, the artificial bee colony is applied in order to determine the optimal position and number of discrete fictitious charges and contour points used in charge simulation method (csm), which makes it possible to obtain very sufficient precision in the simulation. figure 7 shows the continuous decrease in the objective function value (of) given in equation (17) as a function of the number of iterations in this minimization algorithm. 62 r. djekidel, s. bessidek, a. hadjadj the simulation result for the optimal values of parameters versus iteration number is shown in the fig. 8, where it becomes apparent that this optimization algorithm converges quickly to the best optimal solutions. the indices 'pc', 'ew' and 'pl' represent respectively the phase conductors, earth wires and metallic pipeline. fig. 7 the optimization process of the objective function with the number of iterations fig. 8 convergence of search parameters towards the optimal values in case of perfect parallelism, fig. 9 shows the lateral profile of electric field strength at metallic pipeline surface. it is clear from the graph that the presence of the metallic pipeline disturbs the electric field distribution, this electric field is subjected to a significant increase in the zone of the pipeline location, and this is caused by the accumulated induced electric charges on the pipeline surface. assessment of electrical interference on metallic pipeline from hv overhead power line… 63 fig. 9 perturbed electric field strength on the metallic pipeline surface the perturbed intensity of the electric field on the metallic pipeline’s surface localized at varying separation distances from the hv power line center is shown in fig. 10. it can be observed that the electric field strength has a low value under the middle phase conductor, and then increases progressively to a maximum value at a critical location of the pipeline, at this point, it starts to decline rapidly as one moves away from the hv power line center. as a result, the electric field strength on the metallic pipeline surface is effectively minimized when the pipeline is located as far away from the power line center as possible. fig. 10 perturbed electric field strength as a function of the pipeline separation distance 64 r. djekidel, s. bessidek, a. hadjadj fig. 11 induced voltage values as a function of the pipeline separation distance from the power line center fig. 11 presents the induced voltage values on the metallic pipeline’s surface as a function of its separation distance. it is evident from this figure that the induced voltage profile is generally similar to that of the electric field. from the mid-point of the hv power line, the induced voltage rises until it reaches its maximum value, and then declines gradually with increasing the pipeline separation distance from the mid-point of the hv power line. it is very strongly recommended that the pipeline should be maintained at a proximity distance called critical distance where the induced voltage is very close to zero. fig. 12 strength of shock current flowing through the human body assessment of electrical interference on metallic pipeline from hv overhead power line… 65 under normal operating conditions, the shock current due to the capacitive coupling in a worker when it touches accidentally the metallic pipeline sited at different distances from the hv power line center is shown in fig. 12. it is important to note that the current intensity is directly proportional to the ac induced voltage level, if this voltage is intense on the metallic pipeline, resulting in high value of shock current in contact with the metallic pipeline. fig. 13 calculation of the earthing resistance of metallic pipeline for shock currents values greater than the safety limit for operating personnel, the limit value which is advised by the cigre standard is equal to 10 ma. a concrete preventive measure must be applied: it is enough simply connect the metallic pipeline to the ground through an appropriate resistance calculated properly in accordance with the equation (9) mentioned above. earthing resistance of the metallic pipeline as a function of its separation distance from the hv power line center is presented in fig. 13. as can be noted from this figure, the behavior of earthing resistance profile is inversely to that of electric shock current. in general situation, as shown in fig. (5-b) above, the zone of influence of the circuit (hv overhead power line and metallic pipeline) is divided into parallel sections, so that the geometrical condition represented by the equation (11) is respected. the results of the calculation of the different separation distances (power line-pipeline) and lengths of parallelism (longitudinal and transverse coordinates), for each section are presented in table (1) given below. 66 r. djekidel, s. bessidek, a. hadjadj table 1 dimensions of the sections of the zone of influence: hv power line – metallic pipeline fig. 14 illustrates the variation of the ac induced voltage in each section of the zone of exposure influence, as a function of the equivalent length of parallelism. it can be noted from this figure that the magnitude of the ac induced voltage increases with decreasing in the separation distance between the metallic pipeline and the hv overhead power line, then it remains constant for a constant separation, when the aerial pipeline approaches to the hv power line, this ac induced voltage reaches a maximum value, and then decreases when the metallic pipeline crosses the hv power line, when this metallic pipeline moves away from the hv overhead power line, the ac induced voltage again reaches its maximum value for the same separation distance. in addition, the further we fig. 14 illustration of ac induced voltage along the metallic pipeline in complex case points coordinates (m) (x,y) ratio ( )1i ira y y += separation distance (m) 1éq i iy y y +=  length equivalent (m) 2 2 1 1( ) ( )éq i i i il x x y y+ += − + − 0 100 / / / 500 70 1.43 83.67 500.9 1000 40 1.75 52.91 500.9 2000 40 1 40 1000 3000 40 1 40 1000 4000 40 1 40 1000 5000 40 1 40 1000 6000 40 1 40 1000 6050 20 2 28.28 53.85 6075 10 2 14.14 26.93 6190 -10 -1 6 116.73 6280 -20 0.5 14.14 90.55 6550 -50 0.4 31.62 271.66 7000 -100 0.5 70.71 452.77 https://context.reverso.net/traduction/anglais-francais/coordinates assessment of electrical interference on metallic pipeline from hv overhead power line… 67 get from the hv overhead power line, the induced voltage decreases to achieve very lower values. it can be concluded that the magnitude of ac induced voltage depends directly on the separation distance between the metallic pipeline and the hv overhead power line, and is significantly influenced by the equivalent length of exposure along the area of influence. fig. 15 3-d representation of the ac induced voltage along the metallic pipeline in complex case fig. 15 describes the (3-d) three-dimensional variation of the average total pipeline ac voltage to earth profile, as a function of the equivalent length of parallelism and the pipeline separation distance. it is evident from this figure that the ac induced voltage on metallic pipeline is directly proportional to the equivalent length of exposure; on the other hand, this ac induced voltage is in inverse proportion to the separation distance between the hv overhead power line and the metallic pipeline. the last step is devoted to validate this modelling by comparing the simulation results obtained by the combined approach (csm +abc) with those obtained by the admittance matrix analysis, this simple method is strongly recommended in calculating the ac induced voltage on the metallic pipeline from the hv overhead power line; it presents a fast simulation tool. in fig. 16, we see a good agreement between the values of the induced voltage. this procedure allows to confirm the obtained results.moreover, it validates and ensures the effectiveness and accuracy of the adopted approach. it is important to note that the validation of simple case of perfect parallelism is sufficient to validate the complex case, since the complex case is a series combination of simple cases of parallelism. 68 r. djekidel, s. bessidek, a. hadjadj -80 -60 -40 -20 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 3.5 4 pipeline position from power line center [m] in d u c e d v o lt a g e [ k v ] csm+abc admittance matrix analysis fig. 16 comparison of the ac induced voltage values by the two calculation methods 7. conclusion in this study, an improved method is used to evaluate the capacitive coupling between the hv overhead power line and an aerial metallic pipeline, based on the charge simulation method (csm) combined with the artificial bee colony (abc). from the results, the perturbed electric field on the metallic pipeline located at different separation distances from the hv power line center has a lower value at the hv power line center and increases to reach its peak value, and then gets progressively decreased significantly as one moves away from this center. the ac induced voltage on the metallic pipeline is directly proportional to the electric field; its graphic representation is similar to that of the electric field. generally, if the shock current in a human body touching the metallic pipeline exceeds the authorized limit; therefore, this metallic pipeline must be earthed through an adequate resistance, this protection and mitigation measure is necessarily compulsory to reduce these ac induced voltage levels to accepted limits that are safe for personnel touching the metallic pipeline. in general situation, the magnitude of the ac induced voltage on the metallic pipeline is considerably influenced by the distance separating the hv power line and the metallic pipeline, also the equivalent length of parallel exposure. the performance of the coupled method (csm+ abc) is assured by the comparison between its results and those obtained by the admittance matrix analysis, the comparison shows a good agreement. references [1] cigre, electric and magnetic fields produced by transmission systems, description of phenomena practical guide for calculation, wg 36-01, paris 1980. [2] bs en 50443, effects of electromagnetic interference on pipelines caused by high voltage a.c. railway systems and/or high voltage a.c. power supply systems, cenelec, 2009. [3] h. m. ismail, "effect of oil pipelines existing in an hvtl corridor on the electric-field distribution", ieee trans. power deliv., vol. 22, no. 4, pp. 2466-2471, 2007. assessment of electrical interference on metallic pipeline from hv overhead power line… 69 [4] icnirp, "international commission on non-ionizing radiation protection, guidelines for limiting exposure to time-varying electric and magnetic fields (1hz to 100 khz)", health physics, vol. 99, no. 6, pp. 818-836, 2010. [5] r. djekidel and d. mahi, "calculation and analysis of inductive coupling effects for hv transmission lines on aerial pipelines", przegląd elektrotechniczny, vol. 90, no. 9, pp. 151-156, 2014. [6] iarc, non-ionizing radiation, part 1: static and extremely low-frequency (elf) electric and magnetic fields. iarc monographs on the evaluation of carcinogenic risks to humans, vol. 80, pp. 1-395, 2002. [7] d. karaboga and b. basturk, "a powerful and efficient algorithm for numerical function optimization: artificial bee colony (abc) algorithm", j. glob. optim., vol. 39, pp. 459-471, 2007. [8] d. karaboga and b. akay, "a comparative study of artificial bee colony algorithm", appl. math. comput., vol. 244, no. 1, pp. 108-132, 2009. [9] r. djekidel, a. ameur, d. mahi and a. hadjadj, "electrostatic interference calculation from hv power lines to aerial pipelines using hybrid pso – csm approach", in proceedings of the 9th jordanian international electrical and electronics engineering conference (jieeec), jordan, 2015, pp. 1-6. [10] d. rabah, h. a. chafik and s. a. bessedik, "electrostatic and electromagnetic effects of hv overhead power line on above metallic pipeline", in proceedings of the 5th international conference on electrical engineering – boumerdes (icee-b), boumerdes, october 2017, pp. 1-6. [11] n.h. malik, "a review of the charge simulation method and its applications", ieee trans. electr. insul., vol. 24, no. 1, pp. 3-20, 1989. [12] r. djekidel and d. mahi, "capacitive interferences modeling and optimization between hv power lines and aerial pipelines", int. j. electr. comput. eng., vol. 4, no. 4, pp. 486, 2014. [13] d. himadri, "implementation of basic charge configurations to charge simulation method for electric field calculations", international journal of advanced research in electrical, electronics and instrumentation engineering, vol. 3, no. 5, pp. 9607-9611, may 2014. [14] r. m. radwn and m. m. samy, "calculation of electric fields underneath six phase transmission lines", j. electr. syst., vol. 12, no. 4, pp. 839-851, 2016. [15] m. samy and a. emam, "induced pipeline voltage near-by hybrid transmission lines", innovative systems design and engineering, vol. 8, no. 3, pp. 31-40, 2017. [16] r. djekidel, s. bessedik and s. akef, "3d modelling and simulation analysis of electric field under hv overhead line using improved optimisation method", iet science, measurement & technology, 2020. [17] r. djekidel, s.a. bessedik and a. hadjadj, "electric field modeling and analysis of ehv power line using improved calculation method", fu elec. energ., vol. 31, no. 3, pp. 425-445, 2018. [18] n. d. tleis, power systems modeling and fault analysis. theory and practice. elsevier, 2008. [19] technical specification, basic safety publication: effects of current on human beings and livestock, iec, ts 60479-1, fourth edition 2005-07. [20] m.a. el-sharkawi, electric safety: practice and standards. university of washington, crc press book. taylor & francis group, llc, 2014. [21] v. r. nayak and g. m. kakandikar, artificial bee colony algorithm. department of mechanical engineering, zeal education society’s, dnyanganga college of engineering and research, pune 41, 2014-2015. [22] b. kumar and d. kumar, "a review on artificial bee colony algorithm", int. j. eng. technol., vol. 2, no. 3, pp. 175-186, 2013. [23] m. h. shwehdi, m. a. alaqil and s. r. mohamed, "emf analysis for a 380kv transmission ohl in the vicinity of buried pipelines, computer science", ieee access, vol. 8, pp. 3710-3717, 2020. https://link.springer.com/journal/10898 http://ieeexplore.ieee.org/xpl/articledetails.jsp?tp=&arnumber=19861&querytext%3dnazar+h.+malik%2c+%3a+a+review+of+the+charge+simulation+method+and+its+applications%2c+ieee+trans.+on+electrical+insulation%2c+vol.+24%2c+no.+1%2c+feb+.lb.1989.rb.%2c3-20. javascript:void(0) javascript:void(0) javascript:void(0) javascript:void(0) https://www.semanticscholar.org/author/mohamed-h.-shwehdi/9377463 https://www.semanticscholar.org/author/mohammed-a.-alaqil/65864661 https://www.semanticscholar.org/author/s.-raja-mohamed/1484987735 https://www.semanticscholar.org/paper/emf-analysis-for-a-380kv-transmission-ohl-in-the-of-shwehdi-alaqil/3a83d57fbb779cd5cd70a67a7867f285576f40df https://www.semanticscholar.org/paper/emf-analysis-for-a-380kv-transmission-ohl-in-the-of-shwehdi-alaqil/3a83d57fbb779cd5cd70a67a7867f285576f40df plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 30, no 4, december 2017, pp. 511 548 doi: 10.2298/fuee1704511p consideration of conduction mechanisms in high-k dielectric stacks as a tool to study electrically active defects albena paskaleva 1 , dencho spassov 1 , danijel danković 2 1 institute of solid state physics, bulgarian academy of sciences, sofia, bulgaria 2 university of niš, faculty of electronic engineering, niš, serbia abstract. in this paper conduction mechanisms which could govern the electron transport through high-k dielectrics are summarized. the influence of various factors – the type of high-k dielectric and its thickness; the doping with a certain element; the type of metal electrode as well as the measurement conditions (bias, polarity and temperature), on the leakage currents and dominant conduction mechanisms have been considered. practical hints how to consider different conduction mechanisms and to differentiate between them are given. the paper presents an approach to assess important trap parameters from investigation of dominant conduction mechanisms. key words: high-k dielectrics; conduction mechanisms; electrically active defects 1. introduction since the invention of metal oxide semiconductor field effect transistor (mosfet) transistor in 1947 at bell laboratories and the first integrated circuit (ic) built independently at texas instruments 11 years later astonishing progress has been made in si technology, achieved through continual scaling of semiconductor devices. the phenomenal scaling trends are popularly known as moore‘s law which predicts that the number of components per chip increases exponentially, doubling over 2-3 year period. the key factor enabling the unprecedented scaling trends was the material properties (and the resultant electrical properties) of sio2 and its interface with si. for quite a long time the main electronic device mos transistor consisted of si substrate, sio2 as gate dielectric and poly-si gate electrode. sio2 formed the perfect gate dielectric material successfully scaling from thickness of about 100 nm 40 years ago to a mere 1.2 nm at 90 nm node. this represents a layer only four atoms thick. therefore, the ultimate scaling of device dimensions has pushed the thickness of sio2 to its physical limits where unacceptably high direct tunneling currents were flowing received may 18, 2017 corresponding author: albena paskaleva institute of solid state physics, bulgarian academy of sciences, tzarigradsko chaussee 72, sofia 1784, bulgaria (e-mail: paskaleva@issp.bas.bg) 512 a. paskaleva, d. spassov, d. dankovic through devices. this resulted in increased power dissipation, accelerated oxide degradation and inferior reliability. indeed, the leakage current flowing through the transistors, arising from the direct tunnelling of charge carriers could exceed 100 a/cm 2 , which lies well above the specifications given by the international technology roadmap for semiconductors (itrs), especially for low operating power and low standby power technologies (fig. 1). in fact, in this thickness range the sio2 is not an insulator any more. the only feasible solution of this problem was the replacement of sio2 with alternative dielectrics that have higher permittivity (high-k dielectrics) so that the required capacitance can be obtained with physically thicker layers. the integration of high-k dielectric into si nano-technology posed a lot of serious problems such as: dielectric and interface charges, reduced channel mobility, charge trapping and degradation of parameters over operating time of the device. all these issues are defined by the electronic structure and bonding in high-k dielectrics which are distinctly different from those of sio2. sio2 has polar covalent bonds with a low coordination. unlike sio2, high-k oxides have higher atomic coordination numbers and greater ionic nature in their bonding due to large difference in electronegativity of the metal and o atoms. as a result, high-k dielectrics have much larger density of electrically active defects compared to silicon dioxide. electrically active defects are defined as atomic configurations which give rise to electronic states in the oxide band gap which can trap carriers. these defects influence very strongly the trapping behavior as well as the transport mechanisms, hence the leakage currents flowing through them. however, one of the key requirements for mos fig. 1 leakage current vs. voltage for various sio2 thicknesses [1]. devices, especially dram capacitor (and any kind of memory device which relies on charge storage) is to maintain low leakage current density of the dielectric. high leakage will cause the capacitor to lose its charge representing the stored binary information before the refreshing pulse. it is well known that also the performance of mosfets strongly depends on the breakdown properties and the current transport behavior of the gate dielectric film. low leakage current is a stringent requirement to provide low standby-power consumption for several types of devices (so-called low power applications (e.g. mobile phones, cameras, etc.)) (fig. 1). for high performance applications (e.g. cpus) consideration of conduction mechanisms in high-k dielectric stacks... 513 high current density can be acceptable (see gate limit in fig. 1) but current flow through the dielectric causes increased power dissipation and heating, which on its turn limits the reliability of devices. therefore, investigation of leakage currents and conduction mechanisms of high-k dielectric films have attracted a lot of attention and a huge research effort has been dedicated to address this issue for all kinds of microand nano-electronic devices. next, various conduction mechanisms in dielectric layers are presented shortly and after that their operation in different dielectric stacks is demonstrated. some practical hints how to consider different conduction mechanisms and to differentiate between them are also given. useful information on the trap parameters as well as structural alterations in the layers obtained by these considerations is also presented. 2. conduction mechanisms in dielectrics the perfect insulator is free of traps with a negligible free carrier concentration in thermal equilibrium. therefore, the ideal mos structure is an insulating device where no dc current is flowing. in practice, this is not true, especially for thin dielectric layers and high electric fields, which is the case in up-to-date mos devices. the macroscopic leakage current behaviour in mos (mim) capacitor structure is governed most strongly by the properties of metal/dielectric contact and the defect status of the dielectric film, hence two kinds of conduction mechanisms are considered: electrode-limited and bulk-limited conduction mechanisms. the electrode-limited mechanisms depend strongly on electrode material and metal/dielectric barrier height. they include injection of the carrier over the schottky barrier at the metal/dielectric interface by thermionic emission (schottky emission) and tunnelling through the thin barrier (direct and fowler-nordheim (fn) tunneling). the bulk-limited mechanisms are governed by the material properties of dielectric and especially the existence of traps and ionized centers in the bandgap of dielectric. generally speaking, the bulk-limited conduction mechanisms are trap-assisted mechanisms, among which the most commonly considered are: poole-frenkel (pf) mechanism, trap-assisted tunnelling and space-charge limited current. 2.1. electrode-limited conduction mechanisms schottky emission the schottky effect is a thermionic emission of electrons over the potential barrier b at the metal-insulator interface which is enhanced in the presence of electric field. the current density governed by schottky emission is given by richardson-dushman equation. ) 4/ exp( 0 3 2 kt keq tcj rb rd    (1) here, j is the current density, t is the temperature, e is the electric field, b is the schottky barrier height, kr is the dynamic dielectric constant and constants ε0, q, k, h and crd are the permittivity of the free space, electron charge, boltzmann constant, planck constant and richardson-dushman constant (crd =120 acm -2 k -2 for the free electron approximation), respectively. the factor rkeq 0 3 4/  represents the reduction of the 514 a. paskaleva, d. spassov, d. dankovic surface barrier b by the electric field. if schottky emission is the dominating mechanism, the plot of ln(j/t 2 ) vs. e 1/2 , called schottky plot, should give a straight line. from yintercept the barrier height b could be extracted. there is a requirement for εr, extracted from the slope of the schottky plot, to be self-consistent. this means that εr value is between optical (high frequency) and static dielectric constant (measured from capacitance methods) for an examined dielectric. usually the εr value is very close to the optical dielectric constant, which is equal to the square of the refractive index n (kr = n 2 ). schottky emission is a strongly temperature dependent process. for films where the electron mean free path is lower than the film thickness the standard equation is replaced by a modified one [2]: * 03/ 2 0 ( ) / 4 exp b rq qe km j t e m kt                  (2) where 𝛼 = 3×10 −4 as/cm 3 k 3/2 , 𝜇 is the electronic mobility in the insulator, m * is the effective electron mass in dielectric and m0 is the free electron mass. tunneling mechanisms tunneling can be divided in two cases – direct tunneling (i.e. tunneling through trapezoidal barrier) and fowler-nordheim tunneling (i.e. tunneling through triangular barrier). in the case of thicker films, the tunnelling becomes dominant at voltages where the barrier is approximately triangular and the electrons tunnel from the electrode to conduction band of dielectric. this process is described by fowler-nordheim equation: )exp(2 e b aej  (3) v/cm][106.83)2( 3 8 2/3 0 * 72/32/1* bb m m qm h b            (3a) ]a/v[ 1 1054.1 16 2 * 06 *2 0 3 bb m m m mq a           (3b) fowler-nordheim tunnelling is generally considered to be temperature independent or very little temperature dependent mechanism, taking place at higher electric fields. if the dominant current transport mechanism is fn tunnelling, then the graph of ln(j/e 2 ) versus 1/e will be a straight line and from its slope the barrier height could be extracted. direct tunneling (dt) current is expressed by [3]: 3/ 2 3/ 22 1/ 2 1/ 2 2 ( ( ) ) exp ( ( ) ) b b b b b qvae j eqv                (4) direct tunneling essentially operates in the low field (applied voltage) region v<b/q. for higher v conduction is via fn mechanism as the band bending under these applied voltages transforms the trapezoidal barrier into triangular one. dt is observed only for layers with d < 4-5 nm. consideration of conduction mechanisms in high-k dielectric stacks... 515 fig. 2 electrode limited conduction mechanisms: thermionic schottkey emission, fowlernordheim tunneling as well as direct tunneling (at low applied voltage – dashed line). dotted line shows schottkey barrier lowering. 2.2. bulk-limited conduction mechanisms poole – frenkel (pf) emission, trap-assisted tunneling mechanisms and hopping conduction high-k dielectrics are trap-rich materials and conduction mechanisms, which govern the leakage current through them, are usually trap related. the trap states provide an alternative path for the charge carrier to pass from one electrode to the other. depending on how this process is performed different kinds of trap-related mechanisms could be distinguished. the first step is tunneling of the charge carrier to the empty state and from there it can tunnel to the next trap of the same energy (hopping or multi-step tunneling). if the carrier energy is changed, then the process is inelastic tunneling. in this case the carrier looses energy and occupies a trap with different energy. hopping and inelastic tunneling take place when the traps are distributed in a wide band of energies. the current in hopping conduction is:         kt qae qanj t c   exp (5) where nc is the density of the electrons in the conduction band,  is the frequency of thermal vibration of electrons at trap sites, a is the mean hopping distance, (i.e., the mean spacing between trap sites) and t the traps energy level measured from the bottom of the conduction band. eq. 5 describes the tunneling of electron from a trap to adjacent one. however, if the density of the traps is not high enough so the mean hopping distance is large and the tunneling probability between two neighbor sites will be quite low. the hopping current then will result from the hopping of thermally excited electrons from one isolated site to another [4]:         kt ej texp (6) 516 a. paskaleva, d. spassov, d. dankovic so, in this case j obeys the ohmic law with a temperature dependence defined by t. fig. 3 schematic representation of hopping conduction another possibility is to tunnel from a trap to conduction band of the other electrode, i.e. similar to direct tunneling the electron does not enter the conduction band of dielectric (fig. 4). this process is usually referred to as a trap-assisted tunneling (tat) and obeys the equation [5]: dx xx xn qj d outin t    0 )()( )(  (7) where nt(x) is the trap density distribution, τin(x) and τout(x) tunneling time constants from the electrode to the trap and from the trap to the second electrode (these processes must happen sequentially) and d is the thickness of the layer, respectively. depending of the chosen model for τin and τout calculation different expressions for j can be obtained, and some models involve numerical calculation. (τin in and τout are calculated directly from the wentzel–kramers–brillouin approximation). the above equation can be written as [6]: dx pp ppnc qj tt    21 21 (8) where p1 and p2 are the tunneling probabilities for electron tunneling into the traps and subsequently to the second electrode and ct is a function of t. the integration limits depend on the b and t, and it is from 0 to d if t >b and xt-d if b > t (xt = (b-t-ee)/e, ee is the total energy of the electron in the gate [7]. using wkb approximation, assuming that t +ex >>ee, the following expression for j can be obtained [7]: 3/ 2 1 1 32 1 1 1 2 exp( 3 / 2 ) tan tan 3 t t t t qc n c er j r r ra                       (9) with: consideration of conduction mechanisms in high-k dielectric stacks... 517 r1=exp(-c3/2); r2=exp(c3); tadc  2 3 3  ; 3 24 oxqm a  (9a) or in more simplified equation [8]:  3/ 2 3/ 2 4 exp ( ( )) 3 oxt t t t mqn j qe d x q e                 (10) where xt is the most favorable position of trap in the dielectric, τ is the relaxation time of the trap. m. houssa et al. [9] have shown that in case of si substrate injection through sio2/high-k stack, tat current at low voltages can be approximated by:         kt qv nj tsio t  212exp (11) where vsio2 is the voltage drop across sio2 layer, 1 (usually taken as 3.2 ev) is the barrier height at si/sio2 interface and 2 is the barrier height at sio2/high-k interface. since in most cases mis structures with high-k layers actually are double layered (the high-k film and interfacial sio2 layer with thickness of 12 nm generally), the tat for the low voltage region will be proportional to exp(qv/kt). fig. 4 trap-assisted tunneling mechanism when the applied field is high enough the electron enters the conduction band of dielectric through a triangular barrier (field-assisted tunneling, fat) (fig. 5). in this case by using (8) for the current in the two step tunneling process it can be obtained:          2/3 3 24 exp 3 2 t oxttt e qm e qnc j    (12) the last equation suggests that the process is quite similar to fowler-nordheim tunneling, but in this case the barrier height b at the electrode/dielectric interface is replaced by the energy depth of trap t. 518 a. paskaleva, d. spassov, d. dankovic apart from the ground state (fat), the electrons can tunnel also from a thermally excited state, and the conduction mechanism is referred to as thermionic fat (t-fat). t-fat has been studied in detail by sathayia and karmalkar [10,11]. in this two-step process, thermally excited electrons tunnel from the metal into the trap level and then to the oxide conduction band through the triangular barrier. fig. 5 schematic representation and comparison of poole–frenkel, field-assisted tunneling and thermally stimulated field-assisted tunneling mechanisms along with the modification of the potential barriers of the trap as a result of coulombic interaction between the electron and charged trap core in the presence of electric field. the depth of the trap is 1 ev and the applied electric field is 1.5 mv/cm the most widely reported conduction mechanism in high-k dielectrics is poolefrenkel (pf) emission effect. in the pf mechanism the electron tunnel from electrode to a trap in a forbidden gap of dielectric and then is thermally emitted to conduction band due to the lowering of the coulombic potential barrier when a trap interacts with an electric field. the difference to fat is represented in fig.5, i.e. the electron enters the conduction band of dielectric through different processes – thermal emission and tunneling. pf effect will dominate when the tunneling probability is low: e.g. tunneling distances are long (tat) or electric field is not high enough (fat). once emitted in the conduction band the carrier will be very likely captured again by another trap, so the conduction process will resemble hopping. the participating traps have to be coulombic ones, i.e. neutral when the trap is occupied and charged when empty. the effect is similar to the schottky emission, the electric field lowers the potential barrier for the trapped charge carrier thereby increasing the thermal ionization rate. the equation describing the current associated with field assisted thermal ionization of traps by frenkel [12] treats the presence of only one type of trap in the band gap with the fermi level laying in the middle between trap level and the conduction band edge. the original equation, however, often fails to describe the experimental j-v curves showing different slope than expected when plotted in pf scale (ln(j/e) vs. e 1/2 ). simmons, yeargan and taylor, mark and hartman [13-15] have addressed the issue showing that if the dielectric besides the pf (donor-like) consideration of conduction mechanisms in high-k dielectric stacks... 519 trap contains also another type of traps (e.g. acceptor-like or neutral) reducing the density of the available electrons from the donor centers jpf is defined as:           rkt eq ecj rt pfpf  0 3 / exp (13) here, cpf is constant proportional to the donor trap density (nd) and mobility and r is a coefficient reflecting the degree of compensation of the pf emitting traps by different trapping centers in the dielectric. there are two limiting cases for r: r=1 and r=2, i.e r have to be in the interval 1  r  2. eq. 13 predicts that plot ln(j/e) vs. e 1/2 is straight line from the slope of which high-frequency dielectric constant kr [13] can be found and it is used to verify the operation of pf mechanism. here we should mention that there is some discrepancy in the literature about the value of r concerning the original frenkel formula (describing the case when only donor traps present). some author assume r=1 for the original frenkel expression eg. [13,16-21] while others as for example [22-24] show that in fact r=2 should be used. in the former case, commonly r=1 is denoted as a pure (or normal) pf effect, and r = 2 is referred as pf with compensation or modified pf [18-21]. in frenkel‘s derivation [12] the density of electrons in the conduction band (cb) due to the emission is exp(t/2kt) which leads actually to r=2 in (13). as discussed, however, by j.g. simmons in [20] and cited there reference, the abundance of shallow traps in the insulator is expected to increase the emission rate of electrons at high electric fields, and hence in case of thin films pf with r=1 is suggested. in this case, when shallow neutral traps lying above the fermi level and donor sites are introduced in the layer [13] r = 2 is obtained providing the density of compensating traps is approximately equal to the donor ones. note, that the existence of deep acceptor-like traps (below donor sites) will not change r while using the r=1 approach for a film with only donor traps present [13]. and vice versa if the donor only case is treated with r=2 then the deep acceptor-like traps will result in r=1 [14,15], but in the presence of shallow neutral traps it will remain 2. so, the outlined inconsistency in the ―pure‖ pf model significantly embarrasses the interpretation of the experimental data. additionally, as pointed out in [16] besides the presence of compensating traps r in (13) depends also on the electron density in cb. and the two limiting cases are r=1 if nc 1, and if it is positioned below ef it is a deep trap. when one type of single shallow trap exists in the material, j is given by: 3 2 8 9 d v j  with           kt ee gn n ft t c exp (17) where g is the degeneracy factor of the traps, nc – effective density of states in the conduction band; nt trap density. the deviation from the ohm‘s law occurs at:  2 0dqn vsclc  (18) (i.e. vsclc depends on nt). as efq rises with the increase of the injected carriers, gradually the trap level will come below efq and eventually all traps will be filled. near the trap filled condition j begins to rise sharply for several orders of magnitude (represented on the logj-logv plot by almost vertical, current jump). this increase continues till all the traps are filled at vtfl after which there is not any trapping, all injected electrons are in conduction band and j is again proportional to v 2 .  2dqn v t tfl  (19) for the insulator with deep traps (efq – et)/kt > 1 the domination of sclc begins when the number of total injected carriers (free and trapped) is equal to the empty traps in equilibrium and occurs at:           kt ee g qntd v ft sclc exp 2  (20) unlike the case of shallow traps or trap-free dielectric, the current after vsclc does not switch to square law. instead a rapid increase of j is observed for v > vsclc. at sufficiently high v > vtfl when all the traps are filled j is again  v 2 (fig. 7). thus, in the simple cases of trap-free dielectric or dielectric with traps represented by a single energy level in the bandgap, the operation of sclc can be reliably verified by the presence of j  v 2 in the characteristics and additionally confirmed by the thickness dependence of j according to (15) and (17). the traps in real dielectrics could be characterized with rather more complex energy distribution than confinement in a discrete energy level. several more complex distributions have been considered such as exponential, gaussian and uniform distributions. it turns out that for these more complicated cases, j in sclc regime is no longer  v 2 . for traps with exponential distribution as well as deep traps distributed in gaussian manner the current obeys [22,31,32]: j v l+1 /d 2l+1 (21) where l is higher than 1 and depends on the specific parameters of the particular distribution. (however, j for shallow traps with gaussian distribution follows (17) but with different θ.). consideration of conduction mechanisms in high-k dielectric stacks... 523 fig. 7 schematic j-v dependence of an insulator in the characteristic for sclc log-log plot in case of trap-free material and dielectric with shallow and deep traps present. ( st sclcv and dt sclcv denotes the values of vsclc for shallow and deep traps, respectively) if the traps are uniformly distributed within a narrow band in the forbidden gap (e.g. high impurity concentration) then j is represented by [33]: 1 2 2 2 exp( / )expc b v v j q n g e kt d qn ktd            (22) where e is the trap band width and nb is the density of the traps per unit energy interval. the switch from ohmic current to sclc (vsclc) can be obtained by solving j=qnμv/d where j is the current density in sclc regime described by the above relations. the same approach is used to determine vtfl, however, instead of ohmic current eq. (15) have to be used. 3. experimental procedure investigation of current conduction mechanisms was performed on two kinds of test structures metal-insulator-si (mis) or metal-insulator-metal (mim) capacitors. various dielectrics (zro2, hfo2, or ta2o5 and their doped or mixed modifications) were used as insulator in these structures. several techniques (rf magnetron sputtering, metal organic chemical vapor deposition (mocvd), atomic layer deposition (ald)) were implemented to deposit these dielectrics. in addition, capacitor structures with various metal electrodes were prepared in order to investigate their influence on the conduction mechanisms. all details concerning technology of experimental structures could be found in the related publications cited in the text. current flowing in the structures is measured in a wide voltage and temperature ranges and in both field polarities (i.e. in the case of mos structures both at accumulation and inversion conditions) in order to perform complete analysis of current conduction mechanisms. it should be taken into account that when the mos structure is in inversion due to insufficient amount of minority carriers the injection 524 a. paskaleva, d. spassov, d. dankovic current saturates already at low voltages which hinders investigation of conduction mechanisms at higher fields. to solve this problem i –v characteristics in inversion are usually measured under illumination to ensure a sufficient generation of minority carriers. another issue to consider when analyzing i-v curves is the thermodynamic instability of high-k dielectrics when in contact with si. as a result a thin sio2 interfacial layer is usually formed and the applied voltage va distributes between the two layers – the high-k dielectric and the interfacial sio2. therefore, when considering the possible conduction mechanisms, the stacked structure of the dielectric layer should be taken into account. the voltage drops across the high-k dielectric – vhk, and across the interfacial layer – vif, can be obtained by the well-known equations [34]:    1 hk if if hk a hk d d v v   and 1  if hk hk if a if d d v v   (23) where hk and if are the dielectric constants of high-k dielectric and the interface layer, dhk and dif  the thicknesses of the two layers. 4. results and discussion 4.1. conduction mechanisms in sio2 due to the nearly perfect defect free structure of sio2 the main conduction mechanisms which governs the current are the electrode-limited fowler–nordheim (fn) tunneling in thicker films and direct tunneling in layers thinner than about 3 nm. lenzlinger and snow [35] have shown that the conduction current in conventional sio2 films can be excellently described by the classical fn formula. since thermally grown sio2 has an extremely wide bandgap and consequently a high energy barrier at its contact with an electrode, it is more likely to show electrode-limited conduction than other insulators. in addition, bulk-limited mechanisms are less likely to play a role because of the low trap density in the forbidden band of sio2. direct tunneling is observed in very thin dielectric films (< 4 nm). in this case electrons tunnel from one electrode to the other through the dielectric film, i.e. this is a tunneling through trapezoidal barrier and the electron does not enter the conduction band of dielectric. figure depicts typical j-v curves (gate injection mode) of mos capacitors with thermal sio2 with thickness corresponding to dt and fn tunneling regimes, respectively. as seen the experimental data are very well fitted with eq. 3 and 4. assuming that m * /m0 = 0.5the thickness of the sio2 layer and barrier height at al/sio2 interface were found. the obtained results agree very well with the ellipsometrically measured thicknesses and widely accepted the values of b for al/sio2 interface. consideration of conduction mechanisms in high-k dielectric stacks... 525 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 experimental fit j ( a /c m 2 ) voltage (v) a) 0 -1 -2 -3 -4 -5 -6 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 experimental fit j ( a /c m 2 ) voltage (v) b) fig. 8 leakage currents of al/sio2/p-si capacitors with sio2 thickness of 2.3 nm (a) and 6.6 nm (b). the data is fitted to dt (a) and fn (b) mechanisms using m * /m0 = 0.5; b = 3.05 ev (a) and 3.1 ev (b). 4.2. conduction mechanisms in high-k dielectrics in high-k materials the conduction mechanisms are usually trap related and the domination of a certain mechanism depends on many parameters, which could be summarized in several groups: 1) parameters of intrinsic and process-induced traps (density, spatial and energy location, and charge state), which are directly related to the inherent electronic structure of the high-k material as well as to the technological processes used for their fabrication; 2) stack parameters including thickness of the dielectric and existence of interfacial layer, structural status of the films (amorphous or crystalline), type of metal electrode, etc.; and 3) measurement conditions—applied voltage and its polarity and temperature. such a big set of parameters influencing the conduction process results in a wide diversity of mechanisms observed in high-k dielectric stacks. dependence on measurement conditions (bias, polarity, temperature) it is clear that conduction mechanisms are strongly dependent and defined by the measurement conditions (bias, polarity, temperature). respectively, the change of measurement conditions could result in a change of dominating conduction process in dielectric and this change could be used for better understanding of trap participation in conduction mechanisms as well as assessment of some structure parameters. the first example will demonstrate the possibility to obtain the barrier height at high-k dielectric/si interface by measurement at low temperatures. ti/zr-silicate/si mos structures have been investigated [36] and we tried to obtain fowler–nordheim conduction in this structure. i–v measurements were performed under substrate injection at low temperatures (from room down to -185 c). the measurements showed indeed that below about -120c, the i–v curves are temperature independent and can be well fitted by fowler–nordheim equation (3). from the fitting, we obtained a value of 1.4 ev for the barrier height at the zr-silicate/si interface. this value is in agreement with the value of 1.4 ev given for zirconium dioxide [37]. 526 a. paskaleva, d. spassov, d. dankovic measurements at very low temperatures could give also valuable information about the traps because all temperature activated processes are suppressed, hence only temperature independent processes (e.g. fowler-nordheim, field-assisted tunneling etc.) may operate. in addition, at a certain temperature the trapping and detrapping are in a thermal equilibrium. as the trapping is slightly temperature dependent [38,39], while detrapping is strongly temperature stimulated process, it is expected that at very low temperatures detrapping does not occur, hence the influence on the leakage current of trapping with respect to detrapping will be maximized. following this idea the change of conduction mechanisms in tin/zr1-xalxo2/tin mim structures (al content less than 10%) measured in a wide bias and temperature range [40] has been investigated. the j-v curves of structures are measured down to very low (25 k) temperatures (fig. 9). despite of the symmetrical mim structures there is a polarity asymmetry at 25 k, while at 300 k symmetrical curves have been obtained (fig. 9a). at t<175 k the conduction process at both polarities is symmetric it is fat through one and the same bulk traps located at ~1.3-1.4 ev below cb of dielectric. the asymmetry of j-v curves and the stronger temperature dependence at positive bias resulted from the trapping/detrapping at the bottom tin/high-k interface (where thin tiox–like layer is formed [41,42]) and the shift v ~ 0.4-0.5 v between the two j-v curves at 25 k corresponds to a trapped charge of ~8x10 12 cm -2 . consideration of possible conduction mechanisms at higher temperatures (t≥25 c) (fig. 9b) in negative polarity revealed that at low fields (v<│-2│ v) the current is due to trap assisted tunneling (tat) through a trapezoidal barrier and the activation energy of the process is ~0.25 ev. the increase of voltage above │-2│ v changes the barrier for the tunneling electrons from trapezoidal to triangular, i.e. a change from tat to fat occurs, which results in a change of the field dependence of the current. the weak temperature dependence in the range 30-100 c and the obtained activation energy of ~0.25 ev (same as that for v<│-2│v) (fig. 9b) is related to the thermal excitation of electrons at the first stage of the tunneling process (i.e. injection from electrode to the trap). with the increase of temperature above 100 c the probability for thermal excitation from trap to the cb of dielectric increases and the pf process through traps located at ~1.3 ev (fig. 10a) becomes the dominant mechanism. therefore, the results reveal existence of a trap level at about 1.3 ev below the cb edge of dielectric, which fully controls the transport of electrons through the dielectric at negative polarity and gives rise to several conduction mechanisms that dominate at different conditions. this trap level is assigned to the first ionization level v + of o vacancy in zro2 whose energy position has been calculated at 1.2-1.4 ev [43]. the conduction at positive polarity is substantially different and only one temperature activated process operates (fig.10b), unlike the case at negative polarity. pf conduction is the dominating mechanism at these conditions and the energy location of traps is found to be at ~0.85 ev below the cb of the dielectric (i.e., it is substantially different from the values obtained at negative polarity). therefore, the current transport at very low temperatures is realized through 1.3 ev traps, whereas at higher temperatures different traps govern the current at the two polarities. the feasible explanation is that 0.85 ev trap level is related to defects resulting from the reaction at the high-k/bottom tin electrode. at very low temperatures these defects act as traps, while at high fields and temperatures they serve as transport sites, by this way controlling the current at positive polarity. consideration of conduction mechanisms in high-k dielectric stacks... 527 -5 -4 -3 -2 -1 0 1 2 3 4 10 -8 10 -7 10 -6 10 -5 10 -4 (a) j g ( a /c m 2 ) v g (v) 25 175 300 t (k) 0 1 2 3 4 10 -8 10 -6 10 -4 -v g 2 5 k 300 k j g ( a /c m 2 ) |v g | (v) v g = 0.4 v +v g -4 -3 -2 -1 0 1 2 3 4 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 (b) j g ( a /c m 2 ) v g (v) t = 303-433 k t0 1 2 3 10 -8 10 -6 10 -4 10 -2 j g ( a /c m 2 ) |v g | (v) v g 303 k 373 k +v g -v g fig. 9 j-v curves of tin/zr1-xalxo2/tin capacitors measured (a) from 25 to 300 k, and (b) from 300 to 430 k. the insets compare the j-v curves at both top electrode polarities and different temperatures [40]. fig. 10 arrhenius plot of current density at (a) negative, and (b) positive top electrode polarity [40]. dependence on thickness results obtained for ru/ta2o5/sion/si mos structures will be used to demonstrate the dependence of conduction mechanisms on dielectric thickness [44]. temperature dependent i-v (i-v-t) characteristics of structures with different ta2o5 thickness in the range 1.85 – 13.5 nm measured at 25 and 100 °c are shown in fig. 11. it is seen that i-vt characteristics measured at negative voltages show stronger temperature dependence for the thicker dielectrics; this dependence weakens as the oxide thickness decreases and almost disappears for 1.85-nm-thick oxide film. for positive gate bias, i.e. substrate injection, iv-t characteristics show a weak dependence on temperature for all thicknesses. the considerations show that at low electric fields (fig. 11), the logarithm of current density (jg) changes linearly with gate voltage (vg) for ta2o5 with tox =13.5– 7.0 nm. this is consistent with the poole hopping, eq (14) and can be explained with the higher defect density close to ru electrode originating from the reaction at its interface with ta2o5. for higher electric fields under gate injection (vg>-3, -1.5, and -1 v for mos capacitors with tox=13.5, 7.0, and 3.5 nm, respectively), observed behaviour indicates a gradual transition from temperature dependent conduction mechanism governing leakage current in the thicker layers to the mechanism with a weak temperature dependence in the thinner oxide layers. among other conduction mechanisms examined, only transition from poole-frenkel (pf) 528 a. paskaleva, d. spassov, d. dankovic emission (eq. 13) through thermionic field assisted tunneling (t-fat) to field-assisted tunneling (fat) (eq. 3,12) can qualitatively reproduce i-v-t characteristics. for if layer, direct tunneling through trapezoidal barrier is assumed. for mos structure with tox=13.5 nm, pf emission (eq. 13) fits well i-v-t curves for vg>-3 v and t=0.7 ev is extrapolated from eq. (13) (fig. 12). since electric field in the high-k oxides increases for thinner oxides, electron tunneling from the trap level to ta2o5 conduction band through the triangular barrier (i.e. fieldassisted emission) becomes dominant (fig. 13). in thin layers tunneling is the more probable process. with increasing the thickness, the tunneling probability decreases and the pf emission from the traps becomes dominating. -4 -2 0 2 4 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t=25°c t=100°c c u rr en t d en si ty (a /c m 2 ) gate voltage (v) 13.5 nm 3.5 nm 1.85 nm t ox =7.0 nm fig. 11 leakage current–voltage characteristics measured at 25 (solid symbols) and 100 ◦ c (open symbols) on mos structures with different oxide thickness. for clarity, the i–v–t characteristics of 10 nm thick oxide are not displayed [44]. the trap barrier heights for mos structures with oxide thickness of 10.1, 7.0, and 3.5 nm have been calculated from i-v data measured at room temperature (rt) and 100 °c (ehigh-k is defined from eq. 23; mox=0.3me). the trap barrier heights measured at room temperature are in the range 0.29 0.31 ev for ta2o5 with different thickness, while those extracted from the i-v curves measured at 100 c are systematically lower of about 10 mev. although the difference between t extracted at rt and 100°c is in the range of experimental error, observed behaviour suggests that conduction mechanism in the mos capacitors with 3.5 0.2 mv/cm compared to the pure ta2o5, the effect of the doping consist in a modification of the compensation factor of pf mechanism. the doping of thin ta2o5 increases the value of r to 2, but for the thicker ones r is reduced compared to the pure ta2o5 (fig. 14). these results show that the type and the density of traps are changed as a result of the doping, but the details of this change depend on the film thickness rather than on the ti incorporation method. consideration of conduction mechanisms in high-k dielectric stacks... 531 the analysis of the temperature dependence of the current in ti:ta2o5 layers [48] reveal that the energy levels of the defects participating in the conduction are in the range of 0.6-0.7 ev and do not depend on the method of ti incorporation. these values are close to the values typical for pure ta2o5 suggesting that ti-doping does not alter the dominant defect structure but only the traps density and the degree of compensation in the pf mechanism. 600 800 1000 -30 -28 -26 -24 k r = 4 r = 1.9r = 1.95 r = 1 k r = 4.6 k r = 4 ln (j /e ) e 1/2 (v/cm) 1/2 a) 0.4 0.6 0.8 1.0 e (mv/cm) 10nmta 2 o 5 0.7nmti/10nmta 2 o 5 2nmti/10nmta 2 o 5 400 500 600 700 800 900 1000 -29 -28 -27 -26 -25 -24 -23 -22 -21 r=1.2r = 1.1 1.4 r = 1.7 k r = 4.4 ln (j /e ) e 1/2 (v/cm) 1/2 k r = 5.3 r = 1.2 b) 30nmta 2 o 5 0.7nmti/30nmta2o5 15nmta 2 o 5 /2nmti/15nmta 2 o 5 15nmta 2 o 5 /0.7nmti/15nmta 2 o 5 0.2 0.4 0.6 0.8 1.0 e (mv/cm) fig. 14 poole-frenkel plot of j–v curves of the capacitors with pure and doped ta2o5 with two levels of ti incorporation and two thicknesses d of the stack: a) d∼10 nm, b) ∼30 nm. the values of kr, r are given [47]. hf-doped ta2o5: the doping of ta2o5 with hf results in a significant alteration of the shape and temperature dependence of the leakage current (fig.15) [49]. generally, the current at room temperature in hf-doped samples is higher than that in pure ta2o5 and it is very weakly temperature dependent. the dominating conduction mechanisms and energy location of traps involved in them for samples with various thicknesses are summarized in table 1. the results imply that a change of the conduction mechanism from field-assisted tunneling (fat) to pf emission occurs with increasing the thickness of hfdoped ta2o5 which is in agreement with results obtained above for pure ta2o5 with ru electrode. however, the traps responsible for both processes are the same and they are located at ~0.35-0.45 ev below cb of dielectric. therefore, the conduction in hf-doped ta2o5, either field-assisted tunneling, pf emission or even hopping, is governed by shallower traps (t~0.35-0.45 ev). the deeper levels (~0.75-0.9 ev) typical of pure ta2o5 (table 1) are not observed in any of the doped samples. these results imply that hf passivates the deeper traps (o vacancies) and the electron transport is performed through energetically shallower traps. the obvious consequences of the transport through shallower traps in the doped samples are the higher level of leakage current at room temperature and considerably weaker temperature dependence. the last result can have serious implementation as the increase of temperature during device operation will not change the leakage current in hf-doped samples, hence more stable and predictable behavior and enhanced reliability could be anticipated. in fact, the leakage current at 100° c is already lower in the hf-doped ta2o5 as compared to the un-doped ones. 532 a. paskaleva, d. spassov, d. dankovic 0.0 -0.5 -1.0 -1.5 -2.0 10 -7 10 -6 10 -5 10 -4 10 -3 2.6 2.8 3.0 3.2 3.4 10 -5 10 -4 10 -3 10 -2 7nm 15 nm 20 nm t=0.76 ev  t=0.85 ev j (a /c m 2 ) 1000/t ( k-1) t=0.77ev a) 100 °c room temperature ta 2 o 5 d=7 nm j g (a /c m 2 ) v g ( v) 0.0 -0.5 -1.0 -1.5 -2.0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 5.0x10 -7 1.0x10 -6 -40 -39 -38 -37 -36 -35 hf-doped ta2o5 7 nm 15 nm ln (j /e 2 ) 1/ (v/cm)e -1  t = 0.32 ev  t = 0.43 ev b) 100 °c room temperature hf-doped ta 2 o 5 d=7 nm j g ( a /c m 2 ) v g (v) fig. 15 temperature dependent j-v curves of a) al/pure ta2o5/p-si structures; the inset shows the arrhenius plot of the current for three different film thicknesses and b) al/hf-doped ta2o5/p-si structures; the inset represents the results in fn coordinates [49]. al-doped ta2o5: another doping agent studied to assess the possibility for improving the electrical properties of ta2o5 is aluminum. since al atoms have lower valence than ta ones it was expected that they could act as acceptors and compensate the oxygen vacancies in ta2o5. two al-doping techniques were investigated. in the first approach, al was introduced in ta2o5 using the surface doping method (similarly as in the case of ti and hfdoping) [50]. in the second approach, lightly al-doped ta2o5 layers were obtained by reactive sputtering in oxygen containing environment of taal target containing 5 at% aluminum [51]. for the first type of al-doped stacks, the high field conductance was through pf effect, and similarly to the case of ti-doping the effect of the dopant consists in a modification of the compensation factor r. the increase of al content results in higher r. consideration of conduction mechanisms in high-k dielectric stacks... 533 the behavior of lightly al-doped films fabricated by taal target sputtering is more complicated. compared to the pure ta2o5, the current in lightly al-doped samples is higher. furthermore, the temperature dependence of j seams to depend on the layer thickness as evidenced in fig. 16, symptomatic of a significant difference in the dominant conduction mechanisms. schottky emission and sclc were ruled out as a possible origin of j-v characteristics in 10 nm films. pf mechanism can explain the characteristics at high fields (above 1.4 mv/cm). the obtained from the fits values of r exhibit a clear temperature dependence it decreases with the temperature. j-v curves can be also well described by jexp(e) (fig. 17) which is consistent with poole hopping (eq. 14). the two segments could be interpreted with two sets of traps defining the current at low and high fields respectively. the operation of poole hopping (at gate injection) means the presence of high trap concentration close to the gate electrode. the arrhenius plots of the current density at several applied voltages is depicted on fig. 18 together with the calculated trap energies according to the considered conduction mechanisms. table 1 summary of the dominant conduction mechanisms and the respective traps participating in them in dependence on the film composition and thickness samples d, nm temperature of measurement dominant conduction mechanism trap energy position, ev pure ta2o5 7 20-50 c 60-100c field assisted tunneling poole-frenkel emission 0.4 0.85 hf-doped ta2o5 20-100c field assisted tunneling 0.43 pure ta2o5 15 20-100c poole-frenkel emission 0.76 hf-doped ta2o5 20-100c 1.21.5 mv/cm) is b ~ 0.70.1 ev (m * = 0.1m0) [53]. as the barrier height at tin/hfo2 is expected to be much higher (2.6 ev) [54], we conclude that the dominant mechanism is not fowler-nordheim tunnelling but field-assisted tunnelling (fat). -4 -3 -2 -1 0 1 2 3 4 10 -8 10 -7 10 -6 10 -5 10 -4 j ( a /c m 2 ) voltage (v) 30 o 180 o c 30 o 180 o chfo 2 (75 cy) (a) -5 -4 -3 -2 -1 0 1 2 3 4 5 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 30 o j ( a /c m 2 ) voltage (v) 140 o c 120 o c hah (36/5/36 cy) 30 o (b) bd -5 -4 -3 -2 -1 0 1 2 3 4 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 j ( a /c m 2 ) voltage (v) hahah (24/2/24/2/24 cy) 30 o 160 o c 30 o 140 o c (c) fig. 20 temperature-dependent i-v measurements for: (a) hfo2 (75 cy); (b) hah (36/5/36); and (c) hahah (24/2/24/2/24) samples [52]. consideration of conduction mechanisms in high-k dielectric stacks... 537 therefore, the obtained value of 0.7 ev is the position of traps t with respect to the cb of hfo2 and it corresponds to the energy position of oxygen vacancies in hfo2 [55,56]. the current is temperature dependent for t>60 c, hence poole-frenkel mechanism (eq. 13) has been considered. the obtained values of r 2 kr (from the slope of the lines) are consistent with the refractive index of the dielectric and the limitation 1  r 2 and it is concluded that pf is the dominant conduction mechanism and the energy position of traps t 0.72 ev was extracted, i.e. these are the same traps which govern the fat process at lower temperatures. therefore, the results imply that the conduction is performed through the traps situated at 0.7 ev below the cb of hfo2. fat dominates at low t, while pf dominates at elevated temperatures. it is worth mentioning that fat and pf conduction should co-exist in principle as they both represent the escape of an electron from a trap and the current is actually a sum of the currents from both mechanisms. similarly, the current in hah (36/5/36) sample is nearly t-independent up to 60 c (fig. 20b) and the same mechanisms fat at t < 60 c, and pf at t > 60 c, (ehk > 2 mv/cm) have been considered. the fitting gives a trap energy t 1.2-1.3 ev for fat process and t  0.4 – 0.5 ev for pf process. in other words, unlike the pure hfo2, in the hah (36/5/36) sample the fat and pf processes are mediated by two different trap levels. these results give evidence that al-doping introduces deeper trap levels than these in pure hfo2. further considerations of the conduction mechanisms in the hahah(24/2/24/2/24) sample confirm this conclusion and reveal that the way of al incorporation into hfo2 is also of substantial importance. there is still a weak t-dependence up to 60 c and above 60 c the current increases more strongly compared to the hah(36/5/36) sample (fig. 20c). consideration of fat process as a dominant conduction mechanism at t < 60 c, ehk > 1.4 mv/cm gives a trap level t  1.4 ev, i.e. slightly deeper than that obtained for the hah(36/5/36) sample. poole-frenkel does not fit the i-v curves well. having in mind the peculiarity of the doping process of the hahah(24/2/24/2/24) sample, it is suggested that the conduction could be governed by poole conduction (eq.13). indeed, the poole mechanism fits well the current at t100 c (fig. 21a) and the activation energy of the process controlling leakage current is found (fig. 21b) ea  0.2-0.3 ev for t<100 c, while at t100 c a larger activation energy of ea  0.6-0.7 ev is observed. for poole conduction ea = t – spehk, i.e. the activation energy is linearly dependent on ehk and the intercept of the line with the y-axis gives t = 1.2 ev (fig. 21a), i.e. very similar to the trap level which controls the fat process at lower temperatures both in the hah(36/5/36) and the hahah(24/2/24/2/24) samples. this result supports the conclusion that the 1.2 ev level is related to al-doping. therefore, the results obtained for this sample reveal that fat is dominant at t<60c; at 60c < t < 100c both fat and poole conduction are present. with increasing temperature the contribution of poole conduction increases and at t>100c it is the main mechanism which governs the current in hahah(24/2/24/2/24) sample. the specific way of al incorporation in hahah(24/2/24/2/24) sample results in a more homogeneous distribution of traps and favours poole conduction between them the conduction mechanisms considered up-to-now dominate at relatively high fields ehk > 1.5 mv/cm. as is seen in fig. 20c there is a wide electrical field region (v< -3 v, ehk < 1.3 mv/cm.) where the current increases only slightly with applied voltage and temperature. it is suggested that in this region the conduction is governed by a space charge limited current (sclc) mechanism [57]. the logj-loge representation of i-v 538 a. paskaleva, d. spassov, d. dankovic curves gives a line with a slope of 1 corresponding to ohmic conduction, which increases to 2 (fig.22). this behavior is in accordance with the sclc theory in the presence of discrete shallow traps (i.e. trap level above the fermi level) (eq. 17). the voltage vtfl in fig. 22 is a trap-filled limit at which all the traps are filled. therefore, in this field range sclc is the dominant mechanism in the hahah(24/2/24/2/24) sample. 2.0 2.5 3.0 -18 -16 -14 -12 -10 -8 ln j e hk (mv/cm) (a) t=120-160 o c 30 o c 160 o c 2.0 2.4 2.8 0.5 0.6 0.7  t -s p e hk , ev e hk , mv/cm  t =1.2 ev 2.4x10 -3 2.8x10 -3 3.2x10 -3 -17 -15 -13 -11 -9 ln j 1/t (k -1 ) e a = 0.26 ev 0.30 ev 0.28 ev 0.25 ev 0.23 ev 0.19 ev 0.20 ev 0.15 ev 0.61 ev 0.72 ev 0.66 ev 0.67 ev 0.67 ev 0.62 ev 0.58 ev 0.55 ev v = -4.9 v -3.5 v -3.9 v -4.1 v -4.3 v -4.5 v -4.7 v -3.7 v (b) fig. 21 (a) representation of i-v curves in poole coordinates (lnj vs. ehk) of hahah sample. the inset shows the dependence of activation energy ea = t spehk of poole conduction on the electric field. (b) arrhenius plot of the current in hahah sample in the whole temperature range (30-100° c) and for different applied voltages [52]. therefore, the detailed characterisation of conduction mechanisms in different stacks revealed the existence of traps with an energy level of 0.7 ev below the conduction band in pure hfo2 which is consistent with the energy of an oxygen vacancy in hfo2. the consideration of conduction mechanisms in high-k dielectric stacks... 539 conduction in hfo2 is performed via these traps and the dominant conduction mechanism (fat or pf emission) is defined by the measurement conditions (applied voltage and temperature). in all al-doped samples the existence of a deeper level (1.2-1.4 ev below the conduction band) is undoubtedly revealed. the 0.7 ev level is not observed at all. the disappearance of the 0.7 ev trap level could be explained by a reduction of the concentration of oxygen vacancies in hfo2 by al-doping, which was observed also by other authors [58]. the increase of al-doping obviously results in the formation of deeper traps, which have been observed also by molas et. al. [59], who found a trap level at about 1.35 ev below the conduction band for hfalo layers with hf:al(9:1) which is even deeper (1.55 ev) for samples with higher al content (hf:al(1:9)). 10 5 10 6 10 -10 10 -8 10 -6 10 -4 lo g j loge hk ~ 1 4 ~0.63 slope ~ 0.92 ~ 2.1 ~1.5 ~1.8 v tfl = 3.1 v v sclc = 0.9 v fig. 22 logj vs. logehk curves representing the space-charge-limited conduction at low fields in hahah sample [52]. dependence on composition in the examples considered up to now the influence of small amount of a given element on conduction mechanisms of high-k dielectrics have been considered. the next example will demonstrate how the gradual change of hf:ti ratio (both hf and ti in significant amount) in the composition of high-k hfti-silicate layers results in quite different field, temperature and polarity dependences of the leakage currents, hence in significant alteration of the dominating conduction mechanism (fig. 23a-d) [60,61]. five different compositions with hf:ti ratios in the films (100:0), (42:58), (27:73), (12:88), (0:100) have been investigated. the pure hf-silicate (hf0.5si0.5o2) (fig. 23a) exhibits symmetrical i-v curves and conduction mechanisms suggesting deposition of single layers without formation of a significant interfacial layer. this also shows that the asymmetry of the band diagram does not influence the conduction mechanism, hence it is mostly bulk-limited. it is found that the conduction is governed by two different processes – pf emission dominates at lower fields, whereas fat is the more probable process at higher fields. the trap level t evaluated in both processes and both polarities is at 0.65-0.7 ev below the cb of dielectric (inset fig. 23a). at t>100 c for positive polarity another trap level t~1.1 ev is also observed. this trap has been found to dominate also the pf conduction in hf-silicate layers with larger hf content (hf0.86si0.14o2) [62]. the layers containing both hf and ti in significant amounts (hf:ti (42:58) and hf:ti 540 a. paskaleva, d. spassov, d. dankovic (27:73)) reveal a strong gate polarity asymmetry of the conduction process (fig.3b,c). at negative polarity pf emission is again the dominating mechanism. however, two trap levels located at 0.7 ev and 0.9 ev below the cb of dielectric (insets fig. 23b,c) participate in the conduction process. as with the increase of the ti content the conduction through the 0.9 ev level prevails, this trap has been assigned to ti-bonds. the later theoretical calculations of muñoz-ramo et al. [63] have indeed confirmed the existence of a 0.9 ev state caused by ti incorporation into hfo layers. therefore, these states are intrinsic traps related to the inherent electronic structure of the hftio dielectric. the analysis of the curves has also revealed that two phenomena give rise to the asymmetry. the first one is the enhanced trapping of negative charge near the si/dielectric interface which modifies the field, hence the current. a significant trapping of negative charge occurs in the two samples at low positive voltages and lower temperatures. the trapped charge exists along the whole dielectric film and with the increase of ti content its centroid moves farther away from the dielectric/si interface. here, the distinct difference between the traps participating in the conduction process and those causing asymmetry of the i-v curves should be mentioned. the former ones serve only as stepping sites for the carriers (i. e., the electrons are trapped there and released immediately thereafter). the later ones are states in which the carrier is trapped longer and could be detrapped at increased voltage and/or temperature. the asymmetry of electron conduction in the films cannot be explained only by charge trapping especially for the hf:ti (27:73) sample. a formation of an interfacial layer with a composition and/or structure different from the bulk film is also involved for the interpretation of the obtained results. it is suggested that the two phenomena (charge trapping and formation of a double layer structure) are manifestations of one and the same structural process, namely separation of phases and formation of tio2, hfo2, and sio2 islands in the film. depending on the degree of phase separation, these islands can act as trapping centers that only modify the poole-frenkel emission in the layer (hf:ti (42:58)) or can form a separate layer, in this way, causing a real asymmetry of the conduction process (hf:ti (27:73)). the conduction in the sample with the lowest hf content (hf:ti(12:88)) (fig. 23d) and the pure ti-silicate (not shown) could not be fitted by any of the commonly considered conduction mechanisms. the low temperature (down to -193 °c) j-v measurements have revealed the participation of soft-optical phonons with an energy of ~20 mev in the conduction process and it was concluded that it is governed by a phonon-assisted tunneling between localized states (i.e. the current obeys the relation j~exp(a/e 1/4 ) [65]) (insets fig. 23d). the obvious consequence of this kind of process is that the electrons do not enter the conduction band of dielectric and the conduction takes place within the band gap. another implication is that the conduction is governed by the intrinsic properties of the layers. the finding that soft optical phonons impact substantially the conduction gives some hints about the structural status of the films as the phonon modes depend on crystalline (amorphous) structure and local bonding [60,61]. the substantial contribution of the soft optical phonons to the intrinsic properties of hftio layers has been confirmed also by theoretical calculations [63] revealing that the increase in permittivity mainly originates from the changes in phonon spectrum induced by the presence of ti. consideration of conduction mechanisms in high-k dielectric stacks... 541 fig. 23 temperature dependent j-v curves of al/ti/hftisio/p-si structures with different dielectric layer compositions: a) hf:ti (100:0), b) hf:ti (42:58), and c) hf:ti (27:73); the insets show the arrhenius plot of the current and the respective trap energy levels. d) hf:ti (12:88); the insets represent the arrhenius plot of the current and j-v curves in phonon-assisted tunneling coordinates. all j-v characteristics in inversion are measured under illumination to ensure a sufficient generation of minority carriers. [64]. effect of the top (gate) metal electrode the influence of the gate electrode material on the leakage currents and conduction mechanisms in high-k dielectric stacks is of significant interest. since the implementation of high-k dielectrics in microelectronics devices inculcate abandoning the poly-si gates in order to avoid the creation of siox interfacial layers compromising the overall capacitance, the gate material have to be carefully selected. generally, the choice of gate metal is determined of its work function, as the higher work function will result in higher barrier height between the gate electrode and dielectric and hence lower leakage currents are envisaged. it turned out, however, that metal electrodes could also react with the underlying high-k film generating additional traps e.g. oxygen vacancies in the high-k [66]. in addition, the process of gate deposition has to be considered carefully, as it can also introduce defects in the dielectric and modify severely leakage and conduction mechanisms. 542 a. paskaleva, d. spassov, d. dankovic the effect of the metal gate on the conduction mechanisms is illustrated by the results obtain for ta2o5 with al, w and tin gate electrode mis capacitors. two types of ta2o5 layers were studied: reactively sputtered, and thermally oxidized ta2o5 [67,68]. in case of sputtered ta2o5 al-gated structures exhibit highest leakage currents (fig. 24). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -9 10 -7 10 -5 10 -3 10 -1 w tin al w al tin d=17nm 27 17 27 17 31 j ( a /c m 2 ) e (mv/cm) fig. 24 j-e dependence at negative gate voltage for mos capacitors two thickness of ta2o5 and different gate electrodes [67]. despite the higher work function (4.95 ev) capacitors with tin electrodes were leakier than w-gated ones (4.55 ev was assumed as w work function). this behavior was attributed to a lowering of the barrier height at tin/ta2o5 interface, as a result of accumulation of radiation defects during electrode deposition. the conduction analysis showed that the current in the investigated capacitors is generally dominated by bulk limited conduction. pf effect governs the current in al and w gated capacitors. fig. 25 represents leakage characteristics in pf (a) and schottky (b) plots. the dominant mechanism was defined by the level of agreement between kr and their refractive index. the ellipsometry determined values of n were ∼2.2, without a clear dependence on ta2o5 thickness, hence the corresponding value of kr is ~ 4.8. j of capacitors with w electrode is almost independent of e in the low field region (< 0.6mv/cm) suggesting a presence of transient currents. at higher fields (0.8– 1.6mv/cm) the j–e curves are well fitted by a modified pf mechanism (with r=1.4) in case of 17 nm films and normal pf for the thicker (31 nm) ones indicating that they contain fewer traps. al electroded structures are characterized with two regions: a low field region (∼0.1– 0.8 mv/cm) in which the conduction can be attributed to schottky emission (fig. 25b) although the obtained from the fit kr values only roughly agree with ellipsometricallymeasured refractive index. the conductivity in the second region can be described by the modified pf effect, (fig. 25a) with r ≈ 2 with a weak trend of decreasing of r upon the increase of d. neither the pf effect nor the schottky emission can be invoked to explain the conduction for tin capacitors (the values of kr and r extracted from schottky as well as pf plots do not agree with n). the j(v) dependence (fig. 26) at low voltages are linear, indicating ohmic behavior, suggesting hopping conduction [69]. at applied |v| > 0.5 v the current becomes proportional to v 2 characteristic of space charge limited current. this consideration of conduction mechanisms in high-k dielectric stacks... 543 behavior is typical of dielectrics with substantial amount of shallow defects which affect the electric field in the film by charge carriers trapping. based on the results, it can be concluded that the type of the gate electrode affects the dominant conduction mechanism in reactively sputtered ta2o5 layers on si. the observed high leakage current for al/ta2o5 is a result from both lower barrier height and the larger defect density in ta2o5. the former could be additionally reduced by a defects generation at the al/ta2o5 interface due to the reaction between al and ta2o5 causing appearance of thermionic emission in these capacitors [66,67,70]. the j–v behavior of tin capacitors and corresponding conduction mechanisms is a manifestation of electrode deposition induced radiation defects affecting in some extend the electrical properties. 400 600 800 1000 1200 -14 -12 -10 -8 -6 -4 k =4.8 k =4.8 w gate al gate r r =1.4 d=17nm 31 d=17nm 27 r r =1.9 r = 2 r =1.1 ln (j /e ) e 1/2 (v/cm) 1/2 a) fig. 25 j–v (forward bias) curves of capacitors with sputtered ta2o5 and different gate electrodes in a poole-frenkel plot (a) and schottky plot (b) [67]. the obtained results for mis capacitors with thermal ta2o5 and the same metal electrodes (al, w and tin) are in general agreement with the data for sputtered ta2o5 [67]. the lowest leakage corresponds to w-gated capacitors, although in this case the conduction mechanism was not identified. contrary to the structures with sputtered ta2o5 highest j in 544 a. paskaleva, d. spassov, d. dankovic thermal ta2o5 was observed for tin electrodes, and the current of the capacitors with al and tin gates was substantially higher (up to 8 orders of magnitude) than j of w ones. the reason for such behavior was attributed to the possible reaction between ta2o5 and al or tin electrodes producing near the gate interface alox or tiox accompanied with unwanted traps probably in form of oxygen vacancies. the leakage characteristics of structures with al and tin electrodes in pf and schottky plots are presented in fig. 26. a nearly normal pf effect (r = 1.1 at kr = 4.8) dominates the current at applied field of 0.3 to 1.7 mv/cm for the samples with al electrode; schottky conduction can be ruled out as evidenced in fig 26b. pf effect can also be invoked for tin gates at low electric fields (0.06 to 0.5 mv/cm). the obtained compensation factor is 1.2 close to the value proposed for normal pf. hence, thermal ta2o5 exhibits much lower (or negligible) density of compensating centers. the electrode material and deposition conditions only slightly alter the density of compensation traps causing small variations of degree of compensation. at higher fields the slope of pf plot is about 2.5 which is not fully consistent with the pf theory. in this field range j is described reasonably well by schottky emission as the obtained from the plot value of kr is in accordance with ellipsometrically determined refractive index. -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 -5 -4 -3 d =27 nm slope = 2.4 lo g j logv slope = 2 d =17 nm tin gate slope =1 fig. 26 logj vs. logv for tin/sputtered ta2o5/si capacitors [67]. this change of the mechanism from bulk (low and middle fields) to electrode limited (high fields) is strange and at a first glance it is not consistent with the indication for a noticeable generation of defects during tin deposition. this behavior can be attributed to the quality of the top electrode-interface region itself (in one case electrons tunnel from the gate into the traps located close to/in this region and in another case they overcome the gate barrier by schottky emission) defined by the density and energy distribution of the traps created during gate deposition. if the trap concentration close to the electrode is small the electrons could not tunnel through them in ta2o5 conduction band. in this case schottky emission is more relevant at high fields; especially for tin case this means that the rf sputter-induced traps are not basically in the form of traps at the electrode but rather of interface states at si with high density, as indicated by the c–v data. it should be mentioned however, that although r is slightly higher than theoretical limit of 2 in the high-filed region for tin capacitors, the overall form of the pf plot is consistent with the consideration of conduction mechanisms in high-k dielectric stacks... 545 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -28 -24 -20 -16 k r = 4.8 1.2 1.1 r = 2.5 al tin electrode ln (j /e ) e 1/2 (mv/cm) 1/2 a) e (mv/cm) 0.2 0.6 1.0 1.4 1.8 2.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -16 -12 -8 -4 0 ln (j ) e 1/2 (mv/cm) 1/2 tin electrode al k r = 3.8 0.9 1.2 b) e (mv/cm) 0.2 0.6 1.0 1.4 1.8 2.2 fig. 26 (a) poole–frenkel and (b) schottky plot of i–v characteristics for tin and al-electroded capacitors with thermal ta2o5, d = 15 nm [68]. predicted in [16] one, suggesting a translation from r=1 to r=2 with the increase of e as a result of the growth of the electron density in the conduction band during the voltage ramp and change of inequity between the free electrons and donor and compensating traps. the observed slightly higher r may be a result from some uncertainty in the electric field determination typical for the structures with high-k dielectrics due to their double– layered nature and charge trapping. moreover, the suggestion that conduction is governed by bulk-limited mechanism is further supported by the absence of a well pronounced effect of the gate material in accordance with its work function, although a special study of the work function especially of tin deposited under conditions used here was not performed and the possibility that it differs from the literature values cannot be excluded. 4. conclusion in conclusion, a big diversity of conduction mechanisms poole–frenkel emission, fieldassisted tunneling, trap-assisted tunneling, phonon-assisted tunneling, etc., is demonstrated to operate in high-k dielectric materials. it is shown that by performing a detailed study and analysis of conduction mechanisms through metal gate/high-k dielectric stacks it is possible to obtain valuable information about the trap parameters as well as some stack parameters and structural alterations in these structures. it is also demonstrated that one and the same trap could mediate different conduction mechanisms in a given high-k dielectric depending on the specific stack parameters and measurement conditions. the doping/mixing of high-k dielectrics is revealed as an effective approach to change the energy location of traps in the bandgap of dielectric as well as their density in this way also changing the dominant conduction mechanism, hence electrical behavior of structures. the results also imply that in most of the cases investigated the oxygen vacancy is the main transport site acknowledgement: the paper is a part of the research done within the bilateral cooperation between bulgarian academy of sciences and serbian academy of sciences and arts. 546 a. paskaleva, d. spassov, d. dankovic references [1] s.h. lo, d. a. buchanan, y. taur and w. wang, ―quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nmosfet's‖, ieee electron device lett., vol. 18, pp. 209-211, 1997. [2] j. g. simmons, ―richardson-schottky effect in solids,‖ phys. rev. lett., vol. 15, pp. 967-968, 1965. [3] k. f. schuegraf and c. hu, "hole injection sio2 breakdown model for very low voltage lifetime extrapolation", ieee trans. on electron devices, vol. 41, no. 5, pp. 761-767, 1994. [4] n.f. mott and w.d. twose, ―the theory of impurity conduction‖, j. appl. phys., vol. 10, pp. 107-163, 1961. [5] a.i. chou, k. lai, k. kumar, p. chowdhury and j.c. lee, ―modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism‖, appl. phys. lett., vol. 70, pp. 34073409, 1997. [6] s. fleisher. p.t. lai and y.c. cheng, ―simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors‖, j. appl. phys., vol. 75, pp. 5711-5715, 1992. [7] m.p. houng and y.h. wang, ―current transport mechanism in trapped oxides: a generalized trap-assisted tunneling model‖, j. appl. phys., vol. 86, pp. 1488-1452, 1999. [8] a. cuadras, b. garido, j.r. morante and l. fonseca, ―leakage currents and dielectric breakdown of si1−x−ygexcy thermal oxides‖, microelectron. reliab. vol. 48, pp. 1635–1640, 2008. [9] m. houssa, m. tuominen, m.naili, v. afanas'ev, a. stesmans, s.haukka and m.m. heyns, ―trap-assisted tunneling in high permittivity gate dielectric stacks‖, j. appl. phys. vol. 87, pp. 86158620, 2000. [10] d.m. sathaiya and s. karmalkar, ―thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and algan∕gan high electron mobility transistors‖, j. appl. phys. vol. 99, 093701, 2006. [11] d.m. sathaiya and s. karmalkar, ―a closed-form model for thermionic trap-assisted tunneling‖, ieee trans. on electron devices vol. 55, pp. 557-564, 2008. [12] j. frenkel, ―on pre-breakdown phenomena in insulators and electronic semi-conductors‖, phys. rev., vol. 54, pp. 647-648, 1938. [13] j. g. simmons, ―poole-frenkel effect and schottky effect in metal-insulator-metal systems‖, phys. rev., vol. 155, pp. 657-660, 1967. [14] r. yeargan and h. l. taylor, ―the poole‐frenkel effect with compensation present―, j. appl. phys., vol. 39, pp. 5600-5604, 1968. [15] d. mark and t. e. hartman, ―on distinguishing between the schottky and poole‐frenkel effects in insulators ―j. appl. phys., vol. 39, pp. 2163-2164, 1968. [16] w. k. choi and c. h. ling, ―analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films‖, j. appl. phys., vol. 75, pp. 39873990, 1994. [17] s.m. sze, physics of semiconductor devices, wiley, new york, 1969. p. 812. [18] r.l. angle and h.e. talley, ―electrical and charge storage characteristics of the tantalum oxide–silicon dioxide device‖, ieee trans. electron devices, vol. 25, pp. 1277–1283, 1978. [19] c. chaneliere, s. four, j.l. autran and r.a.b. devine, ―comparison between the properties of amorphous and crystalline ta2o5 thin films deposited on si‖, microelectron. reliab., vol. 39, pp. 261-268, 1999. [20] j.g. simmons, ―conduction in thin dielectric films‖, j. phys. d: appl. phys., vol. 4, pp. 613-657. [21] f.c. chiu, ―a review on conduction mechanisms in dielectric films‖, advances in materials science and engineering vol. 2014, art. no. 578168 (18p.), 2014. [22] k.c. kao, dielectric phenomena in solids. san diego. elsevier academic press, 2004, p. 447. [23] w.r. harrell and c. gopalakrishnan, ―implications of advanced modeling on the observation of poole– frenkel effect saturation‖, thin solid films, vol. 405, pp. 205-217, 2002. [24] r.g. southwick, j. reed, c.buu, r. butlera and g. bersuker, ―limitations of poole–frenkel conduction in bilayer hfo2/sio2mos devices‖, ieee trans. device and mater. reliab., vol. 10, pp. 201-207, 2010. [25] r. ongaro and a. pillonnet, ―poole-frenkel (pf) effect high field saturation‖, revue phys. appl. vol. 24, pp. 1085-1095, 1989. [26] m. ieda, g. sawa and s. kato, ―a consideration of poole frenkel effect on electric conduction in insulators‖, j. appl. phys. vol. 42, pp. 3737-3740, 1971. [27] j.l. hartke, ―the three‐dimensional poole‐frenkel effect―, j. appl. phys., vol. 39, pp. 4871-4873, 1968. [28] r. ongaro, and a. pillonnet, ―generalized poole frenkel (pf) effect with donors distributed in energy,‖ revue phys. appl., vol. 24, pp. 1097-1110, 1989. consideration of conduction mechanisms in high-k dielectric stacks... 547 [29] b. de salvo, g. ghibaudo, g. pananakakis, b. guillaumot and g. reimbold, ―a general bulk-limited transport analysis of a 10 nm thick oxide stress-induced leakage current‖, solid-state electron., vol. 44, pp. 895-903, 2000. [30] a. pillonnet and r. orlando, revue phys. appl. vol. 25 pp. 229-242, 1990. [31] p. mark and w. helfrich, ―space charge limited currents in organic crystals‖, j. appl. phys., vol. 33, pp. 205-215, 1962. [32] j. s. bonham, ―sclc theory for a gaussian trap distribution‖, aust. j. chem., vol. 26, pp. 927–939, 1978. [33] a. rose, ―recombination processes in insulators and semiconductors‖, phys. rev., vol. 97, pp. 322-333, 1955. [34] c. chaneliere, j.l; autran, r.a.b. devine, and b. balland, ―tantalum pentoxide (ta2o5) thin films for advanced dielectric applications‖, mater. sci. eng., vol. 22, pp. 269−322, 1998. [35] m. lenzlinger and e. snow, ―fowler-nordheim tunneling into thermally grown sio2‖, j. appl. phys., vol. 40, pp. 278-283, 1969. [36] m lemberger, a paskaleva, s zürcher, a.j bauer, l frey and h ryssel, ―electrical characterization and reliability aspects of zirconium silicate films obtained from novel mocvd precursors‖, microelectron. eng., vol. 72, pp. 315-320, 2004. [37] j. robertson, ―electronic structure and band offsets of high-dielectric-constant gate oxides‖, mrs bull., vol. 27, pp. 217-221, 2002. [38] s. kalpat, h.h. tseng, m. ramon, m. moosa, d. tekleab, ph.j. tobin, d.c. gilmer, r.i. hegde, c. capasso, c. tracy and b.e. white jr, ―bti characteristics and mechanisms of metal gated hfo2 films with enhanced interface/bulk process treatments‖ ieee trans. device mater. reliab., vol. 5, pp. 26-35, 2005. [39] m. aoulaiche, m. houssa, r. degraeve, g. groeseneken, s. de gendt, and m. m. heyns, ―polarity dependence of bias temperature instabilities in hfxsi1-xon/tan gate stacks―, in proceedings of the 35th european solid-state device research conference essderc, grenoble, france, 2005, ieee, pp. 197–200. [40] a. paskaleva, m. lemberger, a.j. bauer and l. frey, ―implication of oxygen vacancies on current conduction mechanisms in tin/zr1-x alxo2/tin mim structures‖, j. appl. phys., vol. 109, art. no. 076101 (3p), 2011. [41] w. weinreich,r. reiche, m. lemberger, g. jegert, j. mueller, l. wilde, s. teichert, j. heitmann, e. erben, l. oberbeck, u. schroeder, a. j. bauer and h. ryssel, ―impact of interface variations on j-v and c-v polarity asymmetry of mim capacitors with amorphous and crystalline zr(1-x)alxo2 films‖ microelectron. eng., vol. 86, pp. 1826-1829, 2009. [42] a. paskaleva, m. lemberger, a. j. bauer, w. weinreich, j. heitmann, e. erben, u. schröder, and l. oberbeck, ―influence of the amorphous/crystalline phase of zr1−x alxo2 high-k layers on the capacitance performance of metal insulator metal stacks‖, j. appl. phys., vol. 106, art. no. 054107, 2009. [43] j. robertson, k. xiong, and b. falabretti, ―point defects in zro2 high-κ gate oxide‖, ieee trans. device mater. reliab. vol. 5, 84-89, 2005. [44] m. tapajna, a. paskaleva, e. atanassova, e. dobrocka, k. husekova and k. frohlich, ―gate oxide thickness dependence of the leakage current mechanism in ru/ta2o5/sion/si structures‖, semicond. sci. technol., vol. 25, art. no. 075007, 2010. [45] h. sawada and k. kawakami, ―electronic structure of oxygen vacancy in ta2o5‖, j. appl. phys., vol. 86, pp. 956-959, 1999. [46] w. s. lau, l.l. leong, t. han and n.p. sandler, ―detection of oxygen vacancy defect states in capacitors with ultrathin ta2o5 films by zero-bias thermally stimulated current spectroscopy‖, appl. phys. lett., vol. 83, pp. 2835-2837, 2003. [47] e. atanassova, d. spassov, a. paskaleva, m. georgieva and j. koprinarova, ―electrical characteristics of tidoped ta2o5 stacked capacitors‖, thin solid films, vol. 516, pp. 8684-8692, 2008. [48] d spassov, e atanassova, a paskaleva, n novkovski and a skeparovski, ―electrical behaviour of ti-doped ta2o5 on n2oand nh3-nitrided si‖, semicond. sci. technol., vol. 24, art.no 075024 (10pp.), 2009. [49] a. paskaleva and e. atanassova, ―evidence for a conduction through shallow traps in hf-doped ta2o5‖, mater. sci. semicond. process., vol. 13, pp. 349-55, 2010. [50] a skeparovski1, n novkovski1, e atanassova, a paskaleva and v k lazarov ―effect of al gate on the electrical behaviour of al-doped ta2o5 stacks‖, j. phys. d: appl. phys., vol. 44 art. no. 235103 (10pp), 2011. [51] d. spassov, e. atanassova and a. paskaleva, ―lightly al-doped ta2o5: electrical properties and mechanisms of conductivity‖, microelectron. reliab., vol. 51, pp. 2102-2109, 2011. [52] a. paskaleva, m. rommel, a. hutzler, d. spassov, and a. j. bauer, ―tailoring the electrical properties of hfo2 mos-devices by aluminum doping‖, acs appl. mater. interfaces, vol. 7, pp. 17032-17043, 2015. [53] w.j. zhu, t.p. ma, t. tamagawa, j. kim and y. di, ―current transport in metal/hafnium oxide/silicon structure‖, ieee electron device lett., vol. 23, pp. 97-99, 2002. 548 a. paskaleva, d. spassov, d. dankovic [54] v.v afanas‘ev, a. stesmans, l. pantisano, s. cimino, c. adelmann, l. goux, y.y chen, j.a. kittl, d. wouters and m. jurczak, ―tinx/hfo2 interface dipole induced by oxygen scavenging‖, appl. phys. lett., vol. 98, art. no. 132901 (3pp.), 2011. [55] j.l. gavartin, d. mu oz ramo, a.l. shluger, g. bersuker and b.h. lee, ―negative oxygen vacancies in hfo2 as charge traps in high-k stacks‖, appl. phys. lett., vol. 89, art. no. 082908 (3pp.), 2006. [56] c. mannequin, p. gonon, c. vall e, l. latu-romain, a. bsiesy, h. grampeix, a. sala n and v. jousseaume, ―stress-induced leakage current and trap generation in hfo2 thin films‖, j. appl. phys. vol. 112, art. no. 074103 (9pp.), 2012. [57] m.a. lampert and p. mark, current injection in solids. new york and london, academic press, 1970. [58] t.j. park, j.h. kim, j.h. jang, c.k. lee, k.d. na, s.y. lee, h.s. jung, m. kim, s. han and c.s. hwang, ―reduction of electrical defects in atomic layer deposited hfo2 films by al doping‖, chem. mater., vol. 22, pp. 4175-4184, 2010. [59] g. molas, m. bocquet, j.buckley, h. grampeix, m. g ly, j.p. colonna, c. licitra, n. rochat, t. veyront, x. garros, f. martin, p. brianceau, v. vidal, c. bongiorno, s. lombardo, b. de salvo and s. deleonibus, ―investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future flash memories‖, solid state electron., vol. 51, pp. 1540-1546, 2007. [60] a. paskaleva, a. j. bauer, m. lemberger, and s. z rcher, ―different current conduction mechanisms through thin high-k hfxtiysizo films due to the varying hf to ti ratio‖, j. appl. phys., vol. 95, pp. 55835590, 2004. [61] a. paskaleva, a. j. bauer, and m. lemberger, ―an asymmetry of conduction mechanisms and charge trapping in thin high-k hfxtiysizo films‖, j. appl. phys., vol. 98, art. no 053707, 2005. [62] m. lemberger, a. paskaleva, s. z rcher, a. j. bauer, l. frey, and h. ryssel, ―electrical properties of hafnium silicate films obtained from a single-source mocvd precursor‖, microelectron. reliab., vol. 45, pp. 819-822, 2005. [63] d. muñoz ramo, a. l. shluger, and g. bersuker, ―ab initio study of charge trapping and dielectric properties of ti-doped hfo2‖, phys. rev. b, vol. 79, art. no 035306, 2009. [64] a. paskaleva, m. lemberger, e. atanassova, and a. j. bauer, "traps and trapping phenomena and their implementations on electrical behavior of high-k capacitor stack", j. vac. sci. technol., vol. 29, art. no. 01aa03 (10pp), 2011. [65] g. a. niklasson and k. brantervik, ―analysis of current‐voltage characteristics of metal‐insulator composite films‖, j. appl. phys., vol. 59, pp. 980-982, 1986. [66] r.m. fleming, d.v. lang, c.d.w. jones, m.l. steigerwald, d.w. murphy, g.b. alers, y.-h. wong, r.b. van dover, j.r. kwo, and a.m. sergent, ―defect dominated charge transport in amorphous ta2o5 thin films‖, j. appl. phys., vol. 88, pp. 850-862 2000. [67] d. spassov, e. atanassova and d. virovska, ―electrical characteristics of ta2o5 based capacitors with different gate electrodes‖, appl. phys. a, vol. 82, pp. 55-62, 2006. [68] e. atanassova, d. spassov and a. paskaleva, ―metal gates and gate-deposition-induced defects in ta2o5 stack capacitors‖, microelectron. reliab., vol. 47, pp. 2088–2093, 2007. [69] l. michalas, m. koutsoureli, e. papandreou, a. gantis, g. papaioannou, ―a mim capacitor study of dielectric charging for rf mems capacitive switches‖, facta universitatis, series: electronics and energetics, vol. 28, pp. 113-122, 2015. [70] n. novkovski, ―physical modeling of electrical and dielectric properties of high-k ta2o5 based mos capacitors on silicon‖, facta universitatis, series: electronics and energetics, vol. 27, pp. 259-73, 2014. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 31, no 3, september 2018, pp. 411-423 https://doi.org/10.2298/fuee1803411s fem cfd analysis of air flow in kiosk substation with the oil immersed distribution transformer  stevan stanišić 1 , milica jevtić 1 , bhaba das 2 , zoran radaković 1 1 faculty of electrical engineering, university of belgrade, belgrade, serbia 2 engineering department, etel ltd, auckland 0640, new zealand abstract. in practice of loading of oil-immersed distribution transformers, there is a need to have lumped thermal model, requiring no big computational resources and computational time. one such model is presented in international transformer loading guide (iec 60076-7), where heat transfer inside the transformer is modeled. in case of indoor transformer operation, this model does not consider transient thermal phenomena in the room. we developed a lumped model that includes heat transfer in the transformer room. in scope of the research, we also built fem cfd (finite element method, computational fluid dynamics) model of air flow and heat transfer. the purpose of fem cfd was to make a better insight into air flow, i.e. to study the simplifications introduced in lumped model and suggest potential improvements. this paper presents results achieved with fem cfd. the considered case was the transformer with natural oil and natural air flow (onan). key words: indoor transformer station, thermal model, finite element method, computational fluid dynamics 1. introduction it is well-known that the temperatures at the hottest position (hot-spot) in solid insulation and the hottest oil are the main factors which define possible transformer load (current) at specific ambient conditions (ambient temperature). the majority of the published research relate to the modeling of the heat transfer inside the transformer tank and from the tank and coolers (radiators) to the outer cooling medium. at this point, the losses depend on the load and the average winding temperature. so, the coupled calculation of the temperatures and the losses has to be performed. nowadays, there is a strong demand for saving the space above the ground surface when placing the distribution substations in urban areas. on the other hand, establishing of air flow cooling the transformer can be more difficult and very restricted for underground placement. there is a need to have a calculation method for quantifying this effect. a common solution is prefabricated concrete transformer substation. so far, there received september 29, 2017; received in revised form december 25, 2017 corresponding author: zoran radaković faculty of electrical engineering, university of belgrade, 73 kralj aleksandar blvd, 11000belgrade, serbia (e-mail: radakovic@etf.rs) 412 s. stanišić, m. jevtić, b. das, z. radaković are compact substation designs. technical issues for such substations include sizing of the ventilation openings and choosing the opening types, taking protection into consideration as well (safety of human beings and animals against touching the metallic parts under voltage, entry of the animals, rain etc.). this research was initiated with the task to optimize size and placement of ventilation openings for compact kiosk substation produced by etel ltd, new zealand. ventilation opening sizing is an old engineering problem some 40 years ago there were investigations about it [1, 2, 3], but in modern engineering practice (especially for smart grid concept) there is a need not only to perform the calculations in steady states, but also to develop the dynamic thermal models for the estimation of possible overloading. actual loading guide iec 60076-7 considers additional heating of the transformer due to its positioning in enclosure in simplified manner. the rated top oil temperature rise is corrected (increased) for the difference of air temperature in the enclosure minus ambient air temperature. the standard contains the typical values of this temperature increase for different types of the enclosure, the transformer rated power and the number of transformers in the enclosure. in our previous publication [4], we presented the dynamic thermal model for prefabricated concrete enclosure, typically used in power distribution company, belgrade, serbia. that model was based on the empirical data. in our recent publication [5] we published more physical factor based model. as far as we know, no other research efforts similar to those presented in [5] have been made by other authors. meanwhile, we improved the lumped model announced in [5] and will publish such an upgraded model, with additional on-site tests, in a future paper. the lumped model is suitable for on-line applications, but is simplified and of limited accuracy. in recent years, fem cfd tools are becoming more and more present in the process of research and development of optimal cooling systems for power transformers. so far, main targets of fem cfd analyses in this area are oil cooled core windings as well as both natural and forced transformer substation cooling. it is reported in [6] how finite element approach is applied on oil filled disc type windings for the purpose of locating hot spot. cases regarding optimal design of indoor substation and ventilation are treated in [7, 8, 9, 10, 11]. there is even an example where fem cfd tools were used to gain further insight in conjugate heat transfer for oil inside and air outside the radiators for both onan and onaf transformers [12, 13]. this paper presents the results of the application of fem cfd simulations, which gives detailed space distribution of air velocity and temperature. thus, the simplifications in lumped model can be checked and lumped model potentially improved. the paper presents the experience about the application of fem cfd simulations and their results. 2. geometry of simulated substation the kiosk substation consists of transformer, hv and lv compartments. figure 1 presents the geometry of the transformer compartment used in the model (base sh = a x b = 1.56 x 1.32 = 2.06 m, height h = 1.33 m). the data about real kiosk transformer compartment ventilation openings is specified in table 1. table 2 contains the data about the simplified openings modeled as shown in figure 1. boundary condition with pressure head loss coefficient is assigned to the openings. the rated power of the transformer is 500 kva and it is cooled by natural ventilation over the fins. fem cfd versus lumped thermal model of kiosk substation with the oil immersed distribution transformer 413 kiosk floor is 125 mm thick, kiosk walls containing the openings and kiosk ceiling are all 25 mm thick. in order to simplify the model, only kiosk transformer compartment interior surfaces were modeled, i.e. the wall thickness and the resistance to the heat conduction are neglected. only the convection heat transfer is considered in the model. convection heat transfer coefficient on the inner surfaces of the kiosk is determined from cfd calculation. constant values of convection heat transfer coefficients on outer surfaces are determined using the equation from the theory of natural air flow near horizontal and vertical walls. the drawing of the modeled transformer compartment is shown in figure 1, with openings protruding 25 mm to the outside, thus accounting all hydraulic resistances to air flow. fig. 1 the geometry modeled with cfd fem table 1 data about the real openings openings outlet inlet louvre access door (a) louvre side panel (b) cutout (d) cutout (c) hole rows 10 10 7 18 hole columns 5 8 9 9 intake holes (per panel) 50 80 63 162 height of holes [m] 0.03 0.03 0.01 0.01 width of holes [m] 0.07 0.07 0.07 0.07 hole area [m2] 0.105 0.168 0.044 0.113 hole area reduction due to jalousies (%) 55 55 0 0 effective hole area [m2] 0.047 0.076 0.044 0.113 number of panels 1 3 4 4 effective total volume of holes [m2] 0.047 0.227 0.176 0.454 414 s. stanišić, m. jevtić, b. das, z. radaković table 2 size and position of the modeled openings inlet cutout (c) louvre side panel (b, a) top cutout (d) area (width*height) [m2] 0.282 x 0.632 0.36 x 0.602 0.101 x 0.632 x coordinate of center [m] 0.788 y coordinate of center (front side) [m] 0.012 y coordinate of center (rear side) [m] 1.307 z coordinate of center [m] 0.288 0.956 1.294 3. assumptions in the model we experienced problems with the convergence and had to make simplifications to achieve model convergence. a final score is that 2 of 20 simulations converged with results in expected range, while 5 of 20 simulations were stopped due to very long computational time. the 2 successful simulations took 93 hours and 15 days, respectively. that is why we did not come to the point to include all relevant physical issues in the model. more precisely, fem cfd model is focused on analyzing air flow and heat transfer due to the air mass transfer and heat transfer through the walls. only the transformer compartment is modeled while it is assumed that the temperature in hv and lv compartments are equal to the ambient temperature. no thermal resistances to the heat conduction through the walls, through the ceiling and through the floor were considered. kiosk floor is modeled as adiabatic. these approximations have smaller quantitative effect than two following approximations. the radiation heat transfer is not considered. also, there is an approximation in the model for heat transfer along the radiators, which is important for the air buoyancy in the zone of the radiators. the basics about the buoyancy can be found in our previous publications [5] and [14]. several improvements of the lumped model from [5] have been made in the meantime and will be published as an upgraded model for calculation of air buoyancy, based on the radiator modeled as a heat exchanger. in fem cfd, fins are initially modeled as the rectangular aluminum bars. transformer tank is modeled as a homogeneous body with low thermal conductivity (0.11 w / (mk)). this approximation causes the discrepancy of fin surface temperature from the real one, causing calculation error for the heat transfer to the air and calculation error for the air buoyancy. two attempts were made at modeling air flow. the first was to consider laminar flow and the second with algebraic yplus turbulent flow regime. no convergence with stationary solver has been achieved with either of the flow regimes, so transient solving was applied. the algebraic yplus turbulence has been selected for the simulation of the flows inside closed areas [15]. it solves the flow everywhere and it is the most robust and least computationally intensive with good approximations for internal flow. multiphysics comprising of heat transfer and turbulent flow, algebraic yplus, was employed to the model. effective size of kiosk openings has been modeled through boundary conditions in turbulent fluid flow physics: grille. this boundary condition incorporates effect of having a square mesh on the openings or louvres via head loss coefficient. values for this coefficient are calculated using equations from [16]. fem cfd versus lumped thermal model of kiosk substation with the oil immersed distribution transformer 415 after initial modeling of the fins as bars, they were reduced to surfaces, with thin layer boundary condition for heat transfer and interior walls for laminar flow. comsol built-in default meshing sequence was used with the coarser setting. stationary solver exhibited problems for both laminar and turbulent algebraic yplus model. online research and comsol blog exploration pointed out to the experience that convective cooling sometimes poses a small transient that the stationary solver is not capable to solve. transient (time domain) solver showed much better performance. after gathering such experience, we came to the idea to set initial value of the entire transformer block temperature to 74°c (equal to the steady-state top oil temperature, as presented in [5]), and thus to shorten the computational time needed to reach the steady-state (in respect to needed time if the initial condition would be the cold state). the initial temperature of the fins is set to 20°c. algebraic yplus turbulent model specific solver was used: transient with initialization. this solver is comprised of two study steps. the first step is to initialize the values of wall distances. this study step utilizes a fully coupled physics stationary solver in which initial values of all dependent variables (temperature, pressure, velocity field, wall distance in viscous units and reciprocal wall distance) are solved for using iterative gmres method (generalized minimum residual). the second step uses segregated time dependent solver where first segregated node calculates for velocity field, pressure and temperature using iterative gmres and the second node for wall distance in viscous units using direct pardiso solver (parallel direct sparse solver). time range solved for is (0, 1, 60) [min], meaning that simulation is solved in minutes, starting from zero, with step 1 until one hour has been reached. our assumption was that this period would be sufficient to reach a quasi-stationary state concerning air flow and cooling process since the entire domain volume of transformer already had the temperature as its steady-state condition. nevertheless, because of setting the initial temperature of the fins to 20°c and adopting low thermal conductivity for the solid material of the tank no steady-state has been reached. 4. computing resources the best available computation resource we had was a single desktop with 64-bit windows 7 enterprise os, intel core i5-6400 cpu and 32 gb (2x16 gb) of ddr4-2400/ pc4-19200 ram. 5. calculation results the following 6 tables present the results of the post-processing of fem cfd simulation results. tables 3 and 4 show the differential pressures (differences of pressures of air exiting fins from above and air entering fins from bellow) averaged on the surface between each two fins, i.e. over/under the openings. the pressures on the transformer compartment openings in table 4 are given in pa as gauge pressures, i.e. the difference of absolute pressure and referent atmospheric pressure; referent pressure is 1.0133e5 pa, at the level of the kiosk ceiling. 416 s. stanišić, m. jevtić, b. das, z. radaković table 5 shows the averaged temperatures on 10 surfaces leaning vertically on the fins and 2 surfaces leaning horizontally on the fins from below (z=0.508 m) and from above (z=1.308 m). example of the bottom-most vertical surface on the front radiator is marked on figure 2. table 6 shows averaged temperatures on the openings. the ambient air temperature (outside the kiosk) is 20°c. tables 7 and 8 present the results of the post-processing of fem cfd simulation results for the total air flows in g/s through the surfaces as for averaged temperatures in table 5 (horizontal and vertical surfaces), i.e. cross-sections of the openings. flow values are negative on surfaces where air is dominantly entering the radiator and positive on the outflow surfaces. example of the bottom-most vertical surface on the front radiator is again the same as marked red on figure 2. table 3 pressures difference (pa) on the surfaces between bottoms and tops δp=pexit-pentry between fins 1-2 2-3 3-4 4-5 5-6 6-7 7-8 front side (8 fins) -9.3626 -9.3623 -9.361 -9.3599 -9.3601 -9.3612 -9.3646 rear side (22 fins) -9.3603 -9.3619 -9.3623 -9.3624 -9.3617 -9.361 -9.3601 between fins 8-9 9-10 10-11 11-12 12-13 13-14 14-15 rear side (22 fins) -9.3584 -9.3543 -9.3537 -9.3575 -9.3617 -9.3637 -9.3642 between fins 15-16 16-17 17-18 18-19 19-20 20-21 21-22 rear side (22 fins) -9.365 -9.3656 -9.366 -9.366 -9.3644 -9.3622 -9.3579 table 4 pressures on the openings (in pa as gauge pressures) pressure [pa] c b d front (8 fins) 12.283 4.4086 0.4299 rear (22 fins) 12.282 4.4089 0.4294 table 5 an example of air temperature values [°c] over the fin height z-coordinate [m] top surface 1.23 1.31 1.15 1.23 1.07 1.15 0.99 1.07 0.91 0.99 front side (8 fins) 27.4 26.87 26.8 26.75 26.52 26.04 rear side (22 fins) 26.82 26.11 25.87 25.77 25.67 25.39 z-coordinate [m] 0.83 0.91 0.75 0.83 0.67 0.75 0.59 0.67 0.51 0.59 bottom surface front side (8 fins) 25.63 25.19 24.75 24.51 24 23.66 rear side (22 fins) 24.87 24.7 24.66 24.26 23.74 23.11 table 6 the temperatures [°c] averaged on the openings c b d front (8 fins) 19.84 21.77 28.67 rear (22 fins) 19.91 21.69 28.39 fem cfd versus lumped thermal model of kiosk substation with the oil immersed distribution transformer 417 table 7 an example of air flow values [g/s] over the fin height z-coordinate [m] top surface 1.23 1.31 1.15 1.23 1.07 1.15 0.99 1.07 0.91 0.99 front side (8 fins) 2.6394 1.5214 1.2132 0.9277 0.5038 0.089 rear side (22 fins) 5.8881 5.4824 4.2955 3.9995 3.1065 1.2586 z-coordinate [m] 0.83 0.91 0.75 0.83 0.67 0.75 0.59 0.67 0.51 0.59 bottom surface front side (8 fins) -0.2381 -0.4147 -0.4344 -0.4892 -0.428 -4.585 rear side (22 fins) -0.3735 -1.1181 -0.6613 -0.1161 0.3325 -20.254 table 8 the flows [g/s] on the openings oppening c b d front (8 fins) 42.84 14.413 40.188 rear (22 fins) 69.67 18.666 39.236 fig. 2 example of the vertical surface (first out of 10 for front radiator) 418 s. stanišić, m. jevtić, b. das, z. radaković table 9 presents the values of the characteristic air flows. table 9 air flows flows qc qhp qhtp qhnp qp qnp values [g/s] 112.51 91.1 24.84 66.26 29.11 83.4 qc – inlet opening c qhp – upward flow around transformer through horizontal surface with coordinate z=0.51 m (just below the bottom edges of fins, qhtp – upward flow through the horizontal surfaces below the fins (only the flow component entering both radiators from bellow) qhnp – upward flow that does not enter the radiators: qhnp= qhp – qhtp qp – total air flow into the radiators (qhtp is increased by the air entering from the side (see table 7)) qnp – part of flow through inlet openings (qc) minus flow entering into the radiators (qp): qnp= qc – qp note: we suppose that the reason for the deviation of qhp from qc is the different mesh, i.e. the error caused by the interpolation for different meshes on the opening and on the horizontal plane below the fins. large ratios qhp / qhtp and qnp / qp are the consequence of the air heating up on the tank surfaces which are not covered by the fins where air buoyancy also exists and friction is small (in fact, it appears only in velocity boundary layer. total cooling surface in the lumped model is considered when the heat transfer coefficient (kp) is calculated. it is approximately supposed that the entire air mass, which is used for the calculation of the buoyancy and for the calculation of the frictional pressure drop in space between the radiator plates, flows vertically exclusively between the fins. figure 3 presents the distribution of air velocity on the kiosk walls with the openings, being used to get the values in table 8. figure 4 visualizes space distribution of air velocity and temperature on the side with 8 fins; it is of relevance for values in table 9. fem cfd versus lumped thermal model of kiosk substation with the oil immersed distribution transformer 419 a) on the kiosk wall with the openings, side with 8 fins on the tank b) on the kiosk wall with the openings, side with 22 fins on the tank fig. 3 distribution of the air velocity (m/s) 420 s. stanišić, m. jevtić, b. das, z. radaković fig. 4 space distribution of air flow pattern and temperature on the side with 8 fins fem cfd versus lumped thermal model of kiosk substation with the oil immersed distribution transformer 421 6. the type of the results obtained from fem cfd and lumped model the characteristic temperatures, flows and the pressures can be obtained from the lumped model. the difference in respect to fem cfd calculation is that lumped model delivers only one value for the pressure and the temperature at the bottom of the fins and also only one value at the top of the fins. the values from fem cfd, which are to be compared with the ones from lumped model, are averaged on the surfaces. since ideal upward air flow is supposed in the lumped model, there are no output values for air flow in and out through vertical surfaces in the zone of the fins (tables 5 and 7). the lumped model results are presented in tables 10 (temperatures), 11 (flows) and 12 (pressures). table 10 the values of temperatures obtained by lumped model temperatures       values [°c] 24.6 20.03 51.1 50.7 50.5 50 c  temperature on top of inner side of opening c br  temperature on entry to the radiator tr  temperature on exit from the radiator ceil  temperature on kiosk ceiling near the kiosk wall d  temperature on top of opening d b  temperature on top of opening b table 11 the values of flows obtained by lumped model flows qc qbr qd qb qkdb qkbc values [m3/h] 0.0322 0.129 0.0226 0.01 0.0205 0.0004 there are 4 openings c, 4 openings d and 4 openings b (flow through opening a is practically the same as through b, so it is considered as there is 4 openings b instead of 3 b and 1 a) qc  flow through opening c qbr  flow through the radiator qd  flow through opening d qb  flow through opening b qkdb  flow downstream the kiosk wall (between the openings d and b) qkbc  flow downstream the kiosk wall (between the openings b and c) table 12 the values of pressure differences obtained by lumped model press. diff.      values [pa] -2.662 -8.5479 -1.7405 1.7434 0.4671 press. diff.     values [pa] 0.2726 2.2545* (2.486)** 0.0675 9.1455* (9.3594)** * on the inner side of the kiosk, ** on the outer side of the kiosk 422 s. stanišić, m. jevtić, b. das, z. radaković pc-br  pressure difference between middle of opening c  entry to the radiator pbr-tr  pressure difference between entry to the radiator  exit from the radiator ptr-ceil  pressure difference between exit from the radiator  kiosk ceiling pceil-d  pressure difference between kiosk ceiling  middle of opening d pdin-dout  pressure difference between inner side of middle of opening d  outer side of middle of opening d pbin-bout  pressure difference between inner side of middle of opening b  outer side of middle of opening b pd-b  pressure difference between middle of opening d  middle of opening b pcout-cin  pressure difference between outer side of middle of opening c inner side of middle of opening c pb-c  pressure difference between middle of opening d  middle of opening c 7. conclusions fem cfd method is relatively new and presents a powerful tool for analysis of wide variety of heat transfer problems including fluid flow. nevertheless, as presented in the paper, severe convergence problems can appear when using software based on this method. from that point of view, publishing the practical experience of its application is valuable. convergence problems we encountered were clearly stated in the paper. at the end, fem cfd results that were obtained only gave us qualitative representation of air flow. it was not possible to compare the results with the results of lumped model since the output quantities were not the same. in the experiment there was no record which corresponds to the fem cfd simulation (initial state is different and no steady-state has been reached in fem cfd). stronger computational resources could probably make it feasible to use smaller mesh and to increase convergence. another option, combined with the previous one, is to perform custom meshing in critical zones, i.e. not to use automatic mesh generation as we did. such work is presented in [17], where similar problem, but for transformer placed under the ground surface, is considered using fem cfd. the approach in [17] is stricter with fewer simplifications, but with much stronger hardware recourses solving a model with much higher mesh cells number (as well as performing grid independence verification). at the end, the following conclusions about air flow distribution were drawn from the simulations that converged, which could not have been seen in lumped model developed and applied in our previous work: 1. a part of the air exits the radiator before it reaches the top of the radiator, streaming toward the outlet cutouts. similar situation happens for the air entry: part of air flows from the inlet openings and enters the radiator on the vertical boundary surface of the air ducts between the fins. 2. there is significant upward air flow outside the zone of the fins, caused by the buoyancy in the areas of the tank surfaces which are not covered by the fins (see section 5). these finds should be kept in mind while building the lumped models, i.e. a way of considering their influence (via elements of lumped model) should be explored. fem cfd versus lumped thermal model of kiosk substation with the oil immersed distribution transformer 423 references [1] k. baral and i. primus, "lebensdauer eines 630 kvatransformators in einer beton-netzstation," elektrizitaetswirtschaft, vol. 8, pp. 268–276, 1979. [2] i. primus, "temperaturen in netzstationen–wirtschafliche bedeutung und einfluss factoren," elektrizitaetswirtschaft, vol. 16, pp. 451–460, 1976. [3] i. primus, "temperaturen in netzstationen–messergebnisse und deutung," еlektrizitaetswirtschaft, vol. 22, pp. 833–842, 1976. [4] z. radakovic and s. maksimovic, "non–stationary thermal model of indoor transformer stations," electrical engineering (archiv fur elektrotechnik), vol. 84, no. 2, pp. 109-117, 2002. [5] z. radakovic, m. jevtic and b. das, "dynamic thermal model of kiosk oil immersed transformers based on the thermal buoyancy driven air flow," international journal of electrical power & energy systems, vol. 92, pp. 14-24, nov. 2017. [6] a. k. das and s. chatterjee, "finite element method-based modelling of flow rate and temperature distribution in an oil-filled disc-type winding transformer using comsol multiphysics," iet electric power applications, vol. 11, no. 4, pp. 664 673, 2017. [7] y. huijuan, y. tingfang, x. rui and p. chunhua, "numerical simulation of ventilation for main transformer room of indoor substations," the open automation and control systems journal, vol. 7, pp. 630-639, 2015. [8] h. liu, y. hao, m. fu, d. wang and l. yang, "study on ventilation of indoor substation main transformer room based on comsol software," in proceedings of the 1st international conference on electrical materials and power equipment (icempe), xi'an, china, july 2017. [9] m. r. nalamwar, d. k. parbat and d. singh, "study of effect of windows location on ventilation by cfd simulation," international journal of civil engineering and technology, vol. 8, pp. 521-531, 2017. [10] t. yu, h. yang, r. xu and c. peng, "simulation study on ventilation & cooling for main transformer room of an indoor substation," journal of multimedia, vol. 9, no. 8, pp. 1040-1047, 2014. [11] m. banjac, "application of computational fluid dynamics in cooling systems design for special purpose objects," fme transaction, vol. 42, pp. 26-33, 2014. [12] s. b. paramane, w. v. d. veken and a. sharmac, "a coupled internal–external flow and conjugate heat transfer simulations and experiments on radiators of a transformer," applied thermal engineering, vol. 103, pp. 961-970, june 2016. [13] s. b. paramane, k. joshi, w. v. d. veken and a. sharma, "cfd study on thermal performance of radiators in a power transformer: effect of blowing direction and offset of fans," ieee transactions on power delivery, vol. 29, no. 6, pp. 2596-2604, dec. 2014. [14] z. radakovic and m. sorgic, "basics of detailed thermal-hydraulic model for thermal design of oil power transformers," ieee trans. on power delivery, vol. 25, no. 2, pp. 790-802, 2010. [15] https://www.comsol.com/blogs/which-turbulence-model-should-choose-cfd-application/. [16] i.e. idelchick, handbook of hydraulic resistance, 3rd ed., florida: crc press inc., 1994. [17] j.c. ramos, m. beiza, j. gastelurrutia, a. rivas, r. anton, g. s. larraona and i. de miguel, "numerical modelling of the natural ventilation of underground transformer substations," applied thermal engineering, vol. 51, no. 1-2, pp. 852-863, march 2013. instruction facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 177 191 doi: 10.2298/fuee1602177m artifical neural networks in rf mems switch modelling  zlatica marinković 1 , vera marković 1 , tomislav ćirić 1 , larissa vietzorreck 2 , olivera pronić-rančić 1 1university of niš, faculty of electronic engineering, niš, serbia 2tu münchen, lehrstuhl für hochfrequenztechnik, münchen, germany abstract. the increased growth of the applications of rf mems switches in modern communication systems has created an increased need for their accurate and efficient models. artificial neural networks have appeared as a fast and efficient modelling tool providing similar accuracy as standard commercial simulation packages. this paper gives an overview of the applications of artificial neural networks in modelling of rf mems switches, in particular of the capacitive shunt switches, proposed by the authors of the paper. models for the most important switch characteristics in electrical and mechanical domains are considered, as well as the inverse models aimed to determine the switch bridge dimensions for specified requirements for the switch characteristics. key words: actuation voltage, artificial neural networks, resonant frequency, rf mems, switch 1. introduction modern communication systems rely to a great extent on new high performance rf and microwave devices and components that enable miniaturization of components according to the demand of integrating more and more functionalities by reducing the overall size of the system at the same time. rf mems (micro electro mechanical systems) are novel components which are able to meet the mentioned requirements [1]. rf mems components and devices exploit mechanically movable parts and thus enable a change of topology. one of the first examples developed in 1995 [2, 3] was an electrostatically actuated rf mems shunt switch where the ground of the coplanar waveguide is connected by a very thin membrane. if a dc voltage is applied between ground and signal line, the membrane is pulled down by the electrostatic force and thus it shortens the signal line. since these first developments, many different components based on mems switches have been introduced, like phase-shifters, reconfigurable antennas, matching networks, switch matrices, tunable filters, etc. [4-9] received september 29, 2015 corresponding author: zlatica marinković university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: zlatica.marinkovic@elfak.ni.ac.rs) 178 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić rf mems switches allow multiband operation due to their ability to reconfigure its topology. also, they have several advantages compared to their electronic counterparts, like pin diode or mesfet switches [10]-[12], such as: low insertion loss, high isolation, small size, high linearity and excellent compatibility with microwave and mm-wave circuits. because of those significant advantages, rf mems switches are of growing interest for use in various communication systems, primarily in satellite and mobile communication systems. current research of rf mems switches is mostly concentrated on various new structures, new materials or processes in devices [13]-[16], while optimization analysis of mems devices lacks enough study. a standard approach to obtain rf mems switch electrical characteristics is to use full-wave numerical methods in electromagnetic (em) simulators. however, as it is also necessary to determine mechanical characteristics, simulations in mechanical simulators should be included during the design and simulation as well. although these methods provide the necessary accuracy, they are generally limited to a single analysis for a specific structure, and their computational overhead (running time, memory) becomes extensive when a number of simulations with different mesh properties are needed [17]. an alternative approach to modelling and designing rf mems devices is based on artificial neural networks (anns). anns can be considered as a great fitting tool, i.e. they have the ability to learn the dependence between two sets of data and to generalize, which means to give a correct response to inputs not used in the learning process. they give response almost instantaneously, retaining the accuracy of the standard em and mechanical simulators. owing to these abilities, anns have found a lot of applications in different fields, among others in rf and microwaves. this paper is devoted to applications of anns for modelling and design of rf mems switches. as far as rf mems devices are concerned, anns have been applied as a modelling tool about for a decade [17-25]. they have mostly been applied for modelling the device membrane characteristics. several publications refer to neural modelling of rf mems switches [17, 20, 23-25]. in most of the referred applications, anns were exploited to model dependence of the switch scattering (s-) parameters and/or switch resonant frequency on the dimensions of membrane and frequency. almost all of them refer to switches which have a simple rectangular membrane. in this paper a capacitive switch with a more complex membrane is considered. the paper is organized as follows. after introduction, in section ii a short description of neural networks is given. the capacitive rf mems switch modeled in this work is described in section iii. ann models of switch characteristics, as well as corresponding numerical results and discussions, are presented in section iv. section v contains description of rf mems switch inverse ann models, the modelling results and the discussion. finally, the main concluding remarks are given in section v. 2. artificial neural networks all neural models presented in this work are based on the multilayer perceptron (mlp) neural networks. an mlp ann consists of basic processing elements (neurons) grouped into layers: an input layer, an output layer, as well as several hidden layers [26]. rf mems switch ann models 179 each neuron is connected to all neurons from the adjacent layers. neurons from the same layer are not mutually connected. each neuron is characterized by a transfer function and each connection is weighted. the anns exploited in this work have linear transfer function for neurons from the input and output layer and sigmoid transfer function for the hidden neurons. an ann learns the relationship among sets of input-output data (training sets) by adjusting the network connection weights and thresholds of activation functions. there are a number of algorithms for training of anns. the most frequently used are backpropagation algorithm and its modifications, as the levenberg marquard algorithm [26], used in the present work. once trained, the network provides fast response for various input vectors without changes in its structure and without additional optimizations. the most important feature of anns is their generalization ability, i.e., the ability to generate the correct response even for the input parameter values not included in the training set. the generalization ability has qualified anns to be used as an efficient tool for modelling in the field of rf and microwaves [26-36]. as examples, anns could be used as an alternative to time-consuming electromagnetic simulations [26-28, 30] or an alternative to the conventional modelling of microwave devices [25, 27, 30, 32, 35, 36]. in the present work, the accuracy of ann learning and generalization was tested by calculating average test error (ate), worst case error (wce) and pearson productmoment correlation coefficient (r) [26]. having in mind that it is not possible to determine the number of hidden neurons, in this work for each developed ann, anns with different number of hidden neurons in one or two hidden layers were trained. the network with the best test results was chosen as the final model. when reporting the ann structure of the final models, in this paper the following notation is used: ann denoted with n-h1-h2-m, has n input neurons, h1 and h2 neurons in the first and second hidden layer, respectively, and m output neurons; ann denoted with n-h1-m, has n input and m output neurons and only one hidden layer with h1 neurons. 3. modeled device the considered device is a cpw (coplanar waveguide) based rf mems capacitive shunt switch (see fig. 1) fabricated at fbk in trento in an 8-layer silicon micromachining process [37]. the signal line below the bridge is made by a thin aluminum layer. adjacent to the signal line the dc actuation pads made by polysilicon are placed. the bridge is a thin membrane connecting both sides of the ground. the inductance of the bridge and the fixed capacitance between signal line and bridge form a resonant circuit to ground, whose resonance frequency can be changed by varying the length of the fingered part, lf, close to the anchors and the solid part, ls. at series resonance the circuit acts as a short circuit to ground. in a certain frequency band around the resonance frequency the transmission of the signal is suppressed. the bridge can be closed by applying an actuation voltage of around 45 v. the actuation voltage is determined as the instant voltage applied to the dc pads when the bridge comes down and touches a cpw centerline, which is a pull-in voltage (vpi). this is strongly related to the switch features and mechanical/material properties, such as a dc pad size and location, a bridge spring constant and residual stress, bridge shapes or supports, etc. the finger parts (correspond to lf) in fig. 1 are to control vpi. if finger parts are long compared to the other parts, the bridge becomes flexible and the 180 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić switch is easily actuated by a low vpi. but this increases the risk of a self-actuation or a rf hold-down when the switch delivers a high rf power. and opposite, with the short finger parts, the switch needs a high vpi to be actuated. therefore, the bridge part lengths (lf, ls) should be carefully determined considering a delivering rf power and a feasible dc voltage supply [1]. (a) (b) fig. 1 top-view of the realized switch (a) and schematic (b) of the cross-section with 8 layers in fbk technology [37] 4. ann models of switch characteristics as mentioned in the introductory section, simulations of an rf mems switch characteristics in standard em and mechanical simulators are time consuming, which is especially important when it is necessary to repeat simulations during the design and optimization of the switch characteristics. similarly to the approaches presented in the literature, the authors of this paper have developed neural models of switch electrical and mechanical characteristics, in particular the neural models of s-parameters, resonant frequency and actuation voltage, as shown in figs. 2 and 3. an rf mems switch is a symmetric reciprocal device, i.e., s22 = s11 and s12 = s21, therefore only parameters s11 and s21 were modeled. the ann model of each modeled sparameter consists of two anns, both having three inputs corresponding to the bridge lateral dimensions, ls and lf, and frequency, f, whereas the outputs correspond to the magnitude and phase of the modeled parameter, |sij| and sij , respectively. with the aim to train the anns, it rf mems switch ann models 181 is necessary to simulate the s-parameters for several bridge sizes (i.e. for different values of the bridge lateral dimensions) in a full-wave em simulator. a properly trained ann gives responses which are very close to the response of the full-wave em simulator but in a shorter time, as the ann response is almost instantaneous. by using the developed model, analysis and optimizations of the switch dimensions can be done much faster than in the standard way. as far as the resonant frequency is concerned, the ann model consists of one ann with two inputs corresponding to ls and lf , and one output corresponding to the resonant frequency (see fig. 2b). the data for the ann training consists of several resonant frequencies corresponding to different bridge sizes, and can be acquired by determining the resonant frequency in a full-wave em simulator, or by using the neural model of the parameter s21. like the above mentioned model, this model enables a quick estimation of the switch resonant frequency and optimization of the dimensions to obtain the desired resonant frequency. the model of the switch actuation voltage has the same structure as the resonant frequency model. namely, it has two inputs and one output, corresponding to the bridge lateral dimensions and actuation voltage, respectively, as shown in fig. 3. as in the previous cases, the training data were obtained in a standard simulator able to calculate the switch mechanical properties. the gain in simulation time is the most significant in this case, as simulations in commercial mechanical simulator took much more time than the simulations of the electrical parameters in a full-wave em simulator. (a) (b) fig. 2 ann models of the switch electrical characteristics: (a) s-parameters; (b) resonant frequency (c) fig. 3 ann model of the switch actuation voltage 4.1. numerical results all ann models described above were developed for the considered switch [38, 39]. for development of the models of s-parameters and resonant frequency, the s-parameters for several different combinations of the switch lateral dimensions were simulated in the full-wave em simulator, ads momentum [40], and the corresponding resonant frequencies were determined. the data referring to 23 differently sized bridges were used for the model development, whereas the data referring to 17 bridges different than the training ones were used for validation of the models. the s-parameters used for the model development were simulated in 401 frequency points up to 40 ghz. for each ann model, 182 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić anns with different number of hidden neurons were trained and the anns listed in table 1 were chosen as the final models. table 1 final ann models for the switch electrical and mechanical characteristics with the number of training samples parameter ann model number of training samples |s11| 3-8-6-1 23 x 401  s11 3-10-10-1 23 x 401 |s22| 3-8-8-1 23 x 401  s22 3-10-10-1 23 x 401 fres 2-5-1 23 vpi 2-8-1 30 validation of the ann models has shown that they produce the values which are very close to the values obtained by using the em simulator. as an illustration, in fig. 4 the insertion loss (|s21| in db) and the return loss (|s11| in db) are shown for the device having the bridge with lateral dimensions ls = 350 µm and lf = 75 µm. a very good agreement of the parameters generated by using the developed ann models with the em simulations can be observed. this is especially important, as the data referring to this device was not included in the training set, proving that the anns achieved a good generalization. as far as the resonant frequency is concerned, the maximum difference between the modeled and the reference values for the test devices is less than 1%, which can be considered very good. another illustration of the achieved accuracy of the resonant frequency ann model is the scattering plot given in fig. 5 showing very good agreement of the values obtained by the ann model and the reference values calculated in the em simulator for six considered test devices. more details about development and validation of the ann models of the electrical characteristics can be found in [38, 39]. 0 10 20 30 40 -60 -50 -40 -30 -20 -10 0 s 1 1 ( d b ), s 2 1 ( d b ) f (ghz) ann em simulator s 11 s 21 fig. 4 insertion and return losses for the tested device (ls = 350 µm and lf = 75 µm) rf mems switch ann models 183 9 10 11 12 13 14 15 9 10 11 12 13 14 15 f re s (g h z) e m s im u la to r f res (ghz) ann model fig. 5 resonant frequency scattering plot for six test devices the data used for training and validation of the neural model for the switch actuation voltage, shown in fig. 3, were obtained in the mechanical simulator comsol multiphysics [41]. in total, 39 data samples (pairs of lateral dimensions and the corresponding actuation voltages) were used, thereof 30 for the ann training and 9 for the ann model validation. the best ann has one hidden layer with 8 neurons, as listed in table 1. the validation results shown in table 2 confirm that this model also has very good generalization abilities, as the maximum error for the test devices not used for the ann training is around or less than 1%, i.e., less than 0.5 v. more details about development and validation of this model can be found in [42, 43]. table 2 actuation voltage for the test devices ls (m) lf (m) vpi_target (v) vpi_sim (v) abs. error (v) rel. error (%) 150 25 55.6 55.58 0.02 0.01 150 65 43 43.45 0.45 1.10 250 25 33.3 33.16 0.14 0.40 250 65 28.2 28.21 0.01 0.03 350 10 25.2 25.32 0.12 0.47 350 25 23.8 23.74 0.06 0.25 350 65 21.1 20.99 0.11 0.54 350 75 20.5 20.45 0.35 0.17 450 65 16.9 16.80 0.10 0.57 4.2. discussion as already mentioned, the developed models of the rf mems switch characteristics give responses instantaneously. having in mind that they give the responses with the accuracy close to the accuracy of the calculations in standard em and/or mechanical simulators, they are very convenient to be used for further analyses and optimizations of the considered switch. the mathematical expressions describing the developed anns can 184 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić be easily implemented within the standard simulators by means of blocks dealing with variables and expressions, or can be used separately in different (mathematical) software packages. as an example, optimization of the bridge lateral dimensions for the given requirements for s-parameters in a desired frequency band lasts less than a second when performed by using the neural model implemented in the ads circuit simulator, which is significantly faster than the optimization in the full wave simulator (ads momentum), which lasts around 2 hours [39]. this advantage is even more evident in the case of the mechanical characteristics modelling. namely, the calculation of switch actuation voltage versus the bridge lateral dimensions (plotted in fig. 6), lasts few seconds in the matlab environment by using the developed ann model, whereas the mechanical simulator requires several tens of minutes to determine the actuation voltage for a single combination of the bridge geometrical parameters. optimization of the switch bridge dimensions based on the ann model lasts several seconds, unlike the optimizations in the mechanical simulators lasting for hours. 125 200 300 400 500 0 20 40 60 80 100 0 25 50 75 100 l s (m)l f (m) v p i ( v ) fig. 6 actuation voltage calculated by using the ann model [42] the developed ann models can be efficiently used to study the behaviour of the device when the bridge size is changed, either intentionally, with the aim to optimize the device characteristics, or due to the deviation of the dimensions in the device fabrication process. the analyses done in [44] for the resonant frequency and in [45] for the actuation voltage show that when the dimension changes are within the fabrication tolerances (which are for the considered device up to +/ 3 µm) the changes in the actuation voltage and the resonant frequency can be considered as acceptable. for instance, maximum changes of the resonant frequency for several arbitrary chosen devices when both dimensions were changed in the range +/ 3 µm, with the step of 1 µm are shown in table 3 [44]. it can be seen that maximum deviation of the resonant frequency is 1.5%, with the maximum absolute change of 0.24 ghz. rf mems switch ann models 185 table 3 resonant frequency test results for simultaneous changes of ls and lf up to +/3 µm ls (m) lf (m) max | fres| (ghz) max | fres/fres| (%) 200 20 0.24 1.5 200 50 0.20 1.4 200 80 0.17 1.3 300 20 0.13 1.1 300 50 0.12 1.0 300 80 0.11 0.1 450 20 0.08 0.8 450 50 0.07 0.7 450 80 0.06 0.6 5. rf mems switch inverse ann models as illustrated in the previous section, the developed neural models of the electrical or mechanical characteristics of rf mems switches can significantly speed up the analysis and design of these switches. however, the time needed for the optimization of switch dimensions can be further reduced if the inverse neural models of the switch characteristics versus dimensions are used. namely, it would be very useful to develop models that could predict both of the lateral dimensions of the switch bridge for the given resonant frequency or/and actuation voltage. however, this is not possible, as the inverse functions of the resonant frequency and actuation voltage dependence on the bridge dimensions are not unique, which means that several combinations of the lateral dimensions result in the same resonant frequency or actuation voltage. the authors of the paper proposed inverse models where one of the dimensions is fixed, and the other is determined by an ann, as shown in fig. 7 [39, 43, 46, 47]. (a) (b) fig. 7 inverse ann models for the switch electrical (or mechanical) characteristics: (a) ls (b) lf namely, the proposed inverse ann models of the switch electrical (or mechanical) characteristics consist of anns with two input neurons: one corresponding to the fixed lateral dimension (lf in fig. 7a and ls in fig. 7b) and the other to fres in the case of electrical inverse model, or to vpi in the case of mechanical inverse model, and one output neuron corresponding to the dimension being determined (ls in fig. 7a and lf in fig. 7b). however, during the design of an rf mems switch one may have a need to optimize the dimensions to meet the desired resonant frequency and the actuation voltage simultaneously. that could be complex as the em simulations and simulations of the mechanical characteristics are performed in different software packages. therefore, the authors proposed inverse electromechanical models, which calculate one of the lateral 186 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić dimensions for given both, the resonant frequency and the actuation voltage. for the same reasons as in the case of separate electrical and mechanical inverse models, it is not possible to develop a model that would determine both dimensions at the same time. therefore, the exploited anns have three inputs and one output, as shown in fig. 8. (a) (b) fig. 8 inverse electro-mechanical ann models: (a) ls (b) lf for both types of the inverse models, separate electrical and mechanical or electromechanical ann model, the data for training the anns is obtained by calculating the resonant frequency or/and the actuation voltage for several combinations of the lateral dimensions. this can be done in standard simulators, or alternatively by the previously developed neural models aimed at calculating the resonant frequency and actuation voltage for the given dimensions (let us call them the direct models). once the inverse models are trained, the determination of the desired dimension is done directly without optimization. 5.1. numerical results the proposed inverse ann models were developed for the rf mems switch considered in this work. due to behaviour of the inverse characteristics of the considered devices, it appeared that the data used for the development of the direct models of the resonant frequency and actuation voltage were not sufficient to train the inverse ann models with the satisfying accuracy, as the modelling error was higher than tens of percent in some parts of the input space [39, 43, 46]. therefore, to acquire more training data in these critical parts of the input space, the developed direct neural models were used for generating more training samples. the anns showing the best performance for each model are listed in table 4, together with the number of training samples. to illustrate the accuracy of the inverse modelling, in fig. 9 a comparison of the determined lf and its target value is plotted in the form of scatter plots. fig. 9a refers to the electrical inverse model and fig. 9b to the mechanical inverse model. it can be observed that the deviation of the lf value is within the boundaries of +/-3 µm, indicating very good prediction abilities of the proposed model. similar results were obtained for prediction of ls. table 4 final ann models for the switch electrical and mechanical characteristics with the number of training and test samples inverse model ann model number of training samples electrical lf 2-15-15-1 814 electrical ls 2-15-15-1 814 mechanical lf 2-25-25-1 961 mechanical ls 2-4-6-1 961 electro.mech. lf 3-10-20-1 4131 electro.mech. ls 3-20-10-1 4131 rf mems switch ann models 187 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 l f (m) target l f (  m ) in v er se a n n m o d el (a) 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 l f (m) target l f (  m ) in v er se a n n m o d el (b) fig. 9 inverse modelling of lf : (a) electrical inverse model, (b) mechanical inverse model the inverse electro-mechanical models gave similar accuracy as the separate electrical and mechanical models, which can be seen from the following analysis, where the inverse electromechanical model for determining the fingered part length (shown in fig. 8b) is considered. the influence of the determination of lf to changes of the resonant frequency (desired value 12 ghz) and the actuation voltage (desired value 25 v) were calculated and shown in tables 5 and 6, respectively [48]. namely, for the ls values from 280 to 340 µm, and the desired fres and vpi, the value of lf is calculated (lf_inv). further, the calculated lf value is used to determine the resonant frequency (table 5) or the actuation voltage (table 6) with the direct ann models for fres and vpi, respectively, and these values were compared with the desired values. the corresponding absolute errors (ae) and relative errors (re) are given in tables 5 and 6 as well. it can be seen that the relative errors are less than 2%, which can be considered as good. 188 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić table 5 rf mems switch inverse modelling results: resf [48] sl [µm] resf [ghz] piv [v] inv_fl [µm] dir_resf [ghz] resfae [ghz] resfre [%] 280 12 25 71.350 11.886 0.114 0.95 290 12 25 61.703 11.859 0.141 1.20 300 12 25 52.228 11.827 0.173 1.40 310 12 25 43.426 11.789 0.211 1.80 320 12 25 35.355 11.755 0.245 2.00 330 12 25 26.917 11.884 0.116 0.97 340 12 25 16.59 12.009 0.009 0.07 table 6 rf mems switch modelling results: piv [48] sl [µm] resf [ghz] piv [v] inv_fl [µm] dir_piv [v] pivae [v] pivre [%] 280 12 25 71.350 25.169 0.169 0.68 290 12 25 61.703 25.143 0.143 0.57 300 12 25 52.228 25.120 0.120 0.48 310 12 25 43.426 25.082 0.082 0.33 320 12 25 35.355 25.056 0.056 0.22 330 12 25 26.917 25.129 0.129 0.52 340 12 25 16.590 25.380 0.380 1.50 5.1. discussion the results shown above confirm the accuracy of the determination of the lateral dimensions of the bridge for the given requirements related to the resonant frequency and/or the actuation voltage. the deviation in the dimension prediction is in the order of fabrication tolerances, confirming also the accuracy of modelling. the developed inverse models provide a very fast straightforward calculation of the bridge dimensions. opposite to the direct models, which are valid in the range of the dimensions used for the ann model development, although the inverse models give response for all the inputs falling between minimum and maximum values of input values used for training, they are valid only in the ranges of input values which are physically meaningful. this means that before choosing an input combination for an inverse model, it should be checked if the chosen combination is physically meaningful. this can be efficiently checked from two-dimensional plots input dimension resonant frequency (and/or actuation voltage, depending on the inverse model used) which can be plotted by using the direct ann models [49, 50]. another challenge in bridge dimension optimization is how to determine the bridge lateral dimensions when total length of the bridge is given. since the desired dependence is not unique, as it is case for all mentioned inverse models, such direct model is not possible to be realized with anns. however, the developed ann based direct and inverse models can be used as a solution. the interested readers can find more details about it in [4951]. rf mems switch ann models 189 6. conclusion rf mems switches have seen increasing applications in the field of microwave control, therefore, the design of the circuits containing rf mems switches require the presence of the reliable models. artificial neural networks have appeared as an efficient alternative to standard commercial full-wave em simulators and mechanical simulators providing similar accuracy but with significantly lower computational cost. this paper gives an overview of the neural models of capacitive shunt rf mems switches. despite the fact that the development takes a certain time, as it is necessary to obtain the training data by using the standard simulation methods and to train the ann models (a few minutes per a trained ann), efficiency and speed in giving response make the ann models very convenient for modelling and optimization of electrical and mechanical characteristics of rf mems switches. acknowledgement: the authors would like to thank fbk trento, thales alenia italy, cnr rome and university of perugia, italy for providing rf mems data. this work was funded by the bilateral serbian-german project "smart modeling and optimization of 3d structured rf components" supported by the daad foundation and serbian ministry of education, science and technological development. the work was also supported by the projects tr32052 and iii-43012 of the serbian ministry of education, science and technological development. references [1] g. m. rebeiz, rf mems theory, design, and technology. new york: wiley, 2003. [2] c.l. goldsmith, z. yao, s. eshelman, and d. denniston, "performance of low-loss rf mems capacitive switches," ieee microwave guided wave lett., vol. 8, pp. 269-271, august 1998. [3] g. m. rebeiz, j. b. muldavin, "rf mems switches and switch circuits," ieee microw. mag., vol. 2, no. 4, pp. 59-71, december 2001. [4] s. a. figur, e. meniconi, b. schoenlinner, u. prechtel, r. sorrentino, l. vietzorreck, v. ziegler, "design and characterization of a simplifed planar 16 x 8 rf mems switch matrix for a geostationary data relay", in proceedings of european microwave conference, 2012. [5] s. montori, e. chiuppesi, p. farinelli, l. marcaccioli, r. v. gatti, r. sorrentino, "w-band beamsteerable mems-based reflectarray", international journal of microwave and wireless technologies, vol. 3, no. 05, pp. 521-532, october 2011. [6] g. m. rebeiz, k. entesari, i. reines, s. j. park, m. a. el-tanani, a. grichener, a. r. brown, "tuning in to rf mems", ieee microw. mag., vol. 10, no. 6, pp. 55 – 72, june 2009. [7] m. daneshmand, r. r. mansour, "rf mems satellite switch matrices", ieee microw mag, vol. 12, no. 5, pp. 92 – 109, may 2011. [8] i. jokić, m. frantlović, z. đurić, m. dukić, "rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise", facta universitatis – series electronics and energetics, vol. 28, no. 3, pp. 345-381, 2015. [9] a. napieralski, c. maj, m. szermer, p. zajac, w. zabierowski, m. napieralska, ł. starzak, m. zubert, r.kiełbik, p. amrozik, z. ciota, r. ritter, m. kamiński, r. kotas, p. marciniak, b. sakowicz, k. grabowski, w. sankowski, g. jabłoński, d. makowski, a. mielczarek, m. orlikowski, m. jankowski, p. perek, “recent research in vlsi, mems and power devices with practical application to the iter and dream projects”, facta universitatis – series electronics and energetics, vol. 27, no. 4, pp. 561-588, 2014. [10] m. lazic, m. skender, s. radosevic, “generating driving signals for three phases inverter by digital timing functions”, facta universitatis – series electronics and energetics, vol. 13, no. 3, pp. 353-364, 2000. [11] a. n. al-rabadi, “carbon nano tube (cnt) multiplexers for multiple-valued computing”, facta universitatis – series electronics and energetics, vol. 20, no. 2, pp. 175-186, 2007. 190 z. marinković, v. marković, t. ćirić, l. vietzorreck, o. pronić-ranĉić [12] j. vobecký “the current status of power semiconductors”, facta universitatis – series electronics and energetics, vol. 28, no. 2, pp. 193-203, 2015. [13] m. lamhamdi, p. pons, u. zaghloul, l. boudou, f. coccetti, j. guastavino, y. segui, g. papaioannou, r. plana “voltage and temperature effect on dielectric charging for rf mems capacitive switches reliability investigation” microel. reliab., vol. 48 pp. 1248-1252, sept. 2008. [14] m. matmat, k. koukos, f. coccetti, t. idda, a. marty, c. escriba, j-y. fourniols, d. esteve, “life expectancy and characterization of capacitive rf mems switches”, microelectron. reliab., vol. 50, no. 9–11, pp. 1692-1696, 2010. [15] l. michalas, m. koutsoureli, e. papandreou, a. gantis, g. papaioannou “a mim capacitor study of dielectric charging for rf mems capacitive switches”, facta universitatis – series electronics and energetics, vol. 28, no. 1, pp. 113-122, 2015. [16] m. koutsoureli, l. michalas, g. papaioannou, “assessment of dielectric charging in micro-electro-mechanical system capacitive switches”, facta universitatis – series electronics and energetics, vol. 26, no. 3, pp. 239245, 2013. [17] y. lee, d. s. filipovic, "combined full-wave/ann based modelling of mems switches for rf and microwave applications", in proceedings of the ieee antennas and propagation society international symposium, 2005, pp. 85-88. [18] y. lee, y. park, f. niu, b. bachman, k. c. gupta, d. filipovic, "artificial neural network modelling of rf mems resonators", int. j. rf microw. c e, special issue: rf applications of mems and micromachining, vol. 14, no. 4, pp. 302–316, july 2004. [19] v. litovski, m. andrejevic, m. zwolinski, "behavioural modelling, simulation, test and diagnosis of mems using anns," in proceedings of the ieee international symposium on circuits and systems iscas 2005, 2005, pp. 5182 5185. [20] y. lee, d. s. filipovic, "ann based electromagnetic models for the design of rf mems switches", ieee microw. compon. lett,, vol. 15, no. 11, pp. 823-825, november 2005. [21] y. lee, y. park, f. niu, d. filipovic, "design and optimization of rf ics with embedded linear macromodels of multiport mems devices," int. j. rf microw c e, vol. 17, no. 2, pp. 196-209, march 2007. [22] g. h. yang, q. wu, j. h. fu, k. tang, j. x. he, "an efficient modelling technique for rf mems phase shifter based on rbf neural network," in proceedings of the international conference on microwave and millimeter wave technology icmmt 2008, 2008, pp. 475-478. [23] y. mafinejad, a. z. kouzani, k. mafinezhad, "determining rf mems switch parameter by neural networks", in proceedings of the ieee region 10 conference tencon 2009, 2009, pp. 1-5. [24] y. gong, f. zhao, h. xin, j. lin, q. bai, "simulation and optimal design for rf mems cantilevered beam switch", in proceedings of the international conference on future computer and communication fcc '09, 2009, pp. 84-87. [25] s. suganthi, k. murugesan, s. raghavan, "neural network based realization and circuit analysis of lateral rf mems series switch," in proceedings of the international conference on computer, communication and electrical technology icccet 2011, 2011, pp. 260 265. [26] q. j. zhang, k. c. gupta, neural networks for rf and microwave design, artech house, 2000. [27] c. christodoulou, m. gerogiopoulos, applications of neural networks in electromagnetics, artech house, 2000. [28] p. burrascano, s. fiori and m. mongiardo, "a rewiew of artificial neural network applications in microwave computer-aided design", int j rf microw c e, vol. 9, no. 3, pp. 158-174, 1999. [29] z. marinković, v. marković, "temperature dependent models of low-noise microwave transistors based on neural networks", int. j. rf microw. c e, vol. 15, no. 6, pp. 567-577, 2005. [30] z. marinković, g. crupi, a. caddemi, and v. marković, "comparison between analytical and neural approaches for multibias small signal modelling of microwave scaled fets", microw. opt.techn. lett., vol. 52, no. 10, pp. 2238-2244, 2010. [31] j. e. rayas-sanchez, "em-based optimization of microwave circuits using artificial neural networks: the state-of-the-art", ieee trans. microw. theory techn., vol. 52, no. 1, pp. 420–435, 2004. [32] h. kabir, y. cao, and q. zhang, “advances of neural network modelling methods for rf/microwave applications,” applied computational electromagnetics society journal, vol. 25, no. 5, pp. 423-432, 2010. [33] z. marinković, g. crupi, d. schreurs, a. caddemi, v. marković, "microwave finfet modelling based on artificial neural networks including lossy silicon substrate", microel. eng., vol. 88, no. 10, pp. 3158-3163, 2012. [34] m. agatonović, z. marinković, v. marković, "application of anns in evaluation of microwave pyramidal absorber performance", applied computational electromagnetics society journal, vol. 27, no. 4, pp. 326333, 2012. http://www.sciencedirect.com/science/article/pii/s0026271410003379 http://www.sciencedirect.com/science/article/pii/s0026271410003379 http://apps.webofknowledge.com/full_record.do?product=wos&search_mode=generalsearch&qid=7&sid=y2opmh@dfgnmpdiofid&page=1&doc=1 http://apps.webofknowledge.com/full_record.do?product=wos&search_mode=generalsearch&qid=7&sid=y2opmh@dfgnmpdiofid&page=1&doc=1 rf mems switch ann models 191 [35] z. marinković, o. pronić-ranĉić, v. marković, "small-signal and noise modelling of class of hemts using knowledge-based artificial neural networks", int. j. rf microw. c e, vol. 23, no. 1, pp. 34-39, 2013. [36] z. marinković, n. ivković, o. pronić-ranĉić, v. marković, a. caddemi, "analysis and validation of neural approach for extraction of small-signal models of microwave transistors", microelectron. reliab., vol. 53, no. 3, pp. 414–419, march 2013. [37] s. di nardo, p. farinelli, f. giacomozzi, g. mannocchi, r. marcelli , b. margesin, p. mezzanotte, v. mulloni, p. russer, r. sorrentino, f. vitulli, l. vietzorreck, "broadband rf-mems based spdt", in proceedings of the european microwave conference, 2006. [38] z. marinković, t. kim, v. marković, m. milijić, o. pronić-ranĉić, l. vietzorreck, "rf mems modelling with artificial neural networks", in proceedings of the memswave 2013, 2013. [39] z. marinković, t. kim, v. marković, m. milijić, o. pronić-ranĉić, l. vietzorreck, "artificial neural network based design of rf mems capacitive shunt switches", submitted to aces applied computational electromagnetics society journal [40] advanced design system 2009, agilent technologies [41] comsol multiphysics 4.3, comsol, inc. [42] zlatica marinković, ana aleksić, tomislav ćirić, olivera pronić-ranĉić, vera marković, tomislav ćirić, "analysis of rf mems capacitive switches by using neural model of actuation voltage", 2nd international conference on electrical, electronic and computing engineering (icetran 2015), silver lake, serbia, june 8-11, 2015, pp. mti2.3.1-5. [43] t. ćirić, z. marinković, t. kim, l. vietzorreck, o. pronić-ranĉić, m. milijić, v. marković, "ann approach for mechanical characteristics modelling of rf mems capacitive switches," submitted to journal of electrical engineering-elektrotechnicky casopis [44] z. marinković, t. ćirić, v. đorċević, o. pronić-ranĉić, t. kim, m. milijić, v. marković, l. vietzorreck, "ann approach for the analysis of the resonant frequency behavior of rf mems capacitive switches", in proceedings of the first international conference on electrical, electronic and computing engineering icetran 2014, 2014, pp. mti2.1.1-5 [45] t. ćirić, z. marinković, o. pronić-ranĉić, v. marković, l. vietzorreck , "ann approach for analysis of actuation voltage behavior of rf mems capacitive switches", in proceedings of the 12th international conference on advanced technologies, systems and services in telecommunications telsiks 2015, 2015. [46] z. marinković, t. ćirić, t. kim, l. vietzorreck, o. pronić-ranĉić, m. milijić, v. marković, "ann based inverse modelling of rf mems capacitive switches", in proceedings of the 11th conference on telecommunications in modern satellite, cable and broadcasting services telsiks 2013, 2013, pp. 366-369. [47] l. vietzorreck, m. milijić, z. marinković, t. kim, v. marković, o. pronić-ranĉić, "artificial neural networks for efficient rf mems modelling", in proceedings of the xxxi ursi general assembly and scientific symposium ursi gass, 2014, pp. 1-3. [48] t. ćirić, z. marinković, t. kim, l. vietzorreck, o. pronić-ranĉić, m. milijić, v. marković, "ann based inverse electro-mechanical modelling of rf mems capacitive switches", in proceedings of the xlix scientific conference on information, communication and energy systems and technologies icest 2014, 2014, pp. 127-130. [49] z. marinković, a. aleksić, o. pronić-ranĉić, v. marković, l. vietzorreck, "analysis of rf mems capacitive switches by using switch em ann models", accepted for telfor journal, in press [50] z. marinković, a. aleksić, t. ćirić, o. pronić-ranĉić, v. marković, l. vietzorreck, "inverse electromechanical ann model of rf mems capacitive switches applicability evaluation", in proceedings of the xlx scientific conference on information, communication and energy systems and technologies icest 2015, 2015. [51] z. marinković, a. aleksić, t. ćirić, o. pronić-ranĉić, v. marković, t. ćirić, "analysis of rf mems capacitive switches by using neural model of actuation voltage", in proceedings of the 2nd international conference on electrical, electronic and computing engineering icetran 2015, 2015, pp. mti2.3.1-5. 10904 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 121-131 https://doi.org/10.2298/fuee2301121b © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper performance of wearable circularly polarized antenna on different high frequency substrates for dual-band wireless applications rama s. r. basupalli1, naresh k. darimireddy2, rajasekhar. nalanagula3, sujatha. mandala4 1bvrit (a), medak, telangana, india 2,3,4lendi institute of engineering & technology, ap, india abstract. this paper proposes the effect of different dielectric constants to construct a microstrip patch antenna deployed on jean's textile covering military wireless applications. initially, the structure is designed with double l-shaped slits inserted on both sides of the patch with an fr4 dielectric constant of 4.4. antenna dimensions are 40 × 25 mm2, which is miniature compared to the wave's length (λ) at the desired operating frequency. the proposed antenna performance in terms of simulated parameters such as gain in dbi, reflection loss (s11), directivity, and patch antenna radiation efficiency are executed by the cst mw em simulator. however, the conventional way of this design with fr4 may not be so reliable when it is designed on jean's substrate. besides all the above parameters extracted from the simulator should hold a low value to implement a high-performance deployed wearable antenna. the paper's outcome shows the importance of simulations and measurements undertaken for the proposed antenna assuming both the dielectric constants of fr4 and jeans cloth material (with ℇr of 1.7). the main contribution of the antenna is to resonate at the frequencies of 3.17 ghz with circular polarization and 5.04 ghz with linear polarization. the antenna prototype is described, and its performance is validated using measurements. the proposed structure also provides a better enhancement in terms of 10-db impedance bandwidth, with an average gain of 5 dbi. key words: jean’s dielectric, fr4 substrate, sar, textile antenna, dual-band, circular polarization 1. introduction wearable antennas are becoming extremely popular due to their profound potential in multiple applications covering services such as military soldiers, firefighters, and paramedics. establishing a communication link from the wearable antenna to the base station camp would undoubtedly help the military soldier get rid of heavy-weight telecommunication equipment to received july 09, 2022; revised august 17, 2022, september 06, 2022 and october 09, 2022; accepted october 12, 2022 corresponding author: naresh k. darimireddy lendi institute of engineering & technology, ap, india e-mail: darn0005@uqar.ca 122 r. s. r. basupalli, n. k. darimireddy, r. nalaganula, s. mandala carry along with them [1]-[2]. several current and upcoming modern wireless modules either require or can exhibit a solution by implanting one or more antennas on a piece of textile or cloth or directly integrated in to personal accessories which cover shoes, glasses, buttons, and helmets [3]. specific operating and thermal conditions in which textile antennas designed impose with specific requirements explicitly listed would be included in the performance criteria of antenna experimentation. to be developed as wearable, an antenna must combine a suitable choice of materials, both for the conductive and non-conductive parts, with a standard adopted antenna configuration. the most straightforward approach is to combine, knit, or conductive yarns into a portion of clothing [4]-[5]. for a designated wearable antenna, the wearer's placement, stance, and movements detrimentally impact the input impedance and radiation pattern. wearable antennas are usually broadband to compensate for such casual variations [6]. several techniques have been applied to design single and multiband wearable antennas over the past years, and few include slit [7] or u or l-shaped slot-loaded configurations [8], ebg structure [9], and monopole/planar antennas [10]. although these wearable antennas exhibit single/dual-band characteristics, a limited bandwidth is exhibited at higher resonant modes. furuya et al. [11] proposed a wearable antenna with a wideband for digital tv reception in the frequency range of 470-700 mhz. however, antenna radiation efficiency needs to be sufficiently improved with the required -10db return loss and 3-db axial ratio bandwidth. earlier, several slits/slots were loaded along boundaries of the various patch configurations [12]-[13] fabricated on non-flexible substrates to generate orthogonal modes for circularly polarized (cp) radiation by adequately positioning the feed point. owing to the interest in obtaining dual bands and the circular polarization feature, the proposed antenna is discussed to resonate frequencies covering wireless military applications. this article designs a novel cp-based antenna with double l-shaped slits. dual lshaped slits are fixed on either side of the conductive surface of the textile. slits on either side of the wearable patch antenna provide bandwidth variation. furthermore, the design obtains circular polarization exciting two orthogonally polarized tm01 and tm10 modes by placing the exact location of the feed point. 2. wearable antenna design and simulations the propagation and loss properties at the desired frequency band(s) must be known for the candidate material before antenna design and fabrication. in addition, permittivity and loss tangent have to be characterized to choose textile dielectric material as a substrate with different constructions and thicknesses. effective permittivity and loss tangent can be extracted using the formula based on the resonant frequency [14]-[15]. 2.1. proposed antenna structure the structure of the proposed antenna with the dimensions of ls × ws is represented as shown in figure1 with the placement of narrow dual l shapes slits. a modified ground plane for the improvement of characteristics is shown in figure 1. by optimizing the dimensions of the wearable patch, it is observed that there is an improvement in impedance bandwidth and circular polarization feature. performance of wearable circularly polarized antenna on different high frequency... 123 fig. 1 (a) top and (b) bottom layers of the wearable antenna 2.2. design parameters the parametric study of both dielectric materials (fr4 and jeans) with microstrip line feed is analyzed in this section. a single l-shaped slit on the top layer of the conventional patch makes an additional resonant band possible and slightly enhances the bandwidth. moreover, an additional l-shaped slit introduces a circular polarization feature with the formation of orthogonal modes at the initial resonant band of 3.17 ghz. the dimensions (in mm) for the parameters are listed as follows: ls = 75, ws = 40, wp = 25, lp = 40, w1 = 15, w2 = 1, w3 = 3.95, w4 = 2.8, w5 = 2, l1 = 39, l2 = 26, l3 = 10, l4 = 20. the effect of both dielectric substrates fr4 (4.4) and jean’s cloth (1.7) are discussed to analyze various characteristics. the relevant critical parameter is the fabric's conductivity (σ), holding the units as siemens per meter (s/m) as part of the antenna design. equation (1) gives the relation between the surface resistivity (s) and the thickness (t) of the fabric: 1 s t   = (1) 2.3. effect of different substrates with simulations the proposed wearable antenna with dual l-shaped slits and monopole ground plane improves gain and impedance bandwidth at the resonance bands 3.17 ghz and 5.04 ghz, respectively. it is shown from figure 2 that the degenerate modes are formed at 3.17 ghz leading to an axial ratio bandwidth of 8 mhz for the circular feature. additionally, a high impedance bandwidth is obtained at both resonant bands compared to the fr4. the coverage area using cp would better the short-range communication for military applications. this is the reason for which the prototype is implanted in textile materials. for this study, the characteristics of the wearable design are compared with the fr4 type substrate. fig. 3 shows the comparison of the vswr values for both bands. the values of the vswr are maintained less than 2 to evaluate the simulated results of impedance bandwidth and vswr responses. cst microwave studio simulator is used to analyze the case studies of both dielectric constants for different thickness values. for this study, the thickness values are 1 mm and 0.8 mm. 124 r. s. r. basupalli, n. k. darimireddy, r. nalaganula, s. mandala conventional rectangle shape geometry with l-shaped slits is chosen as implantable on electro textiles due to its simplicity. however, the thickness intensity of the yarns in the woven structures would be an ideal choice for the prototype design. minor variation in the selection of length and width of the conductive fabric as a wearable antenna results in a slight variation in the antenna characteristics, as displayed in figure 2. in general, wearable material holds a very low dielectric constant. therefore, the thickness and substrate dielectric impact are vital in designing the wearable patch to extract the efficient parameters. fig. 2 s11 response of different dielectric constants(fr4 and jean’s) fig. 3 vswr response of different dielectric constants (fr4 and jean’s) table 1 highlights the summary of comparing the executed parameters for both the substrates performed for this work, along with the effect of different thickness values considered. in addition, it mentions the high impedance bandwidth of 1470 mhz (54%) and 60 mhz (1.2%) with a thickness of 1 mm obtained at 3.17 ghz and 5.04 ghz, respectively. performance of wearable circularly polarized antenna on different high frequency... 125 fig. 4 gain versus frequency response for both (fr4 and jean’s) substrates it is proved that the reduction in the wearable dielectric constant increases the antenna performance with the novel structure design proposed. moreover, it is observed that a moderate gain of 5dbi is displayed with a wearable antenna when compared with the low-value gain for fr4 substrate, maintaining the same thickness of the substrate. feature of circular polarization is also obtained for the operating frequency of 3.17 ghz. gain response curve drawn for jean’s substrate show the gain values for 0.9 ghz and 3.2 ghz, respectively as 2 dbi and 3.2 dbi. table 1 performance comparison of both the substrates (jean’s and fr4) in terms of gain and impedance bandwidth dielectric (fr4)-4.4 substrate thickness frequencies (ghz) impedance bandwidth (mhz), % vswr gain(dbi) t=0.8mm 1.82 100, 5.49 1.86 2 4.17 30, 1.79 1.79 1.8 t=1mm 1.81 270,14.6 1.6 1.6 2.72 200,7.3 1.8 2.5 4.06 60,1.4 1.5 3.68 dielectric (jean’s cloth)-1.7 t=0.8mm 3.17 1420,52.3 1.31 3.5 5.07 30, 0.6 1.56 4 t=1mm 3.17 1470,54 1.1 4.1 5.04 60,1.2 1.3 5 sar simulated response for an operating frequency of 0.91ghz is represented in figure 5 and it shows that the sar value denoted on the scale is moderately at 18.2 w/kg. this sar value is to be maintained at low since the textile antenna is worn on a conductive body. material thickness, conductivity, operating frequency range and resonant behavior are 126 r. s. r. basupalli, n. k. darimireddy, r. nalaganula, s. mandala carefully chosen to be distinct to better understand the resulting sar. sar is a measure of power absorbed per unit mass (kg), in the human body tissue. fig. 5 simulated sar response of the antenna operating at 0.91ghz 3. experimental results and discussion the proposed novel textile antenna prototype with optimized dimensions is constructed and investigated experimentally. fig. 6(a) and (b) respectively shows the conventional and modified printed textile antennas fabricated. it is seen that the radiator patch with dual l-slits significantly improves the matching conditions of impedance for high resonance bands and maintains stable gain across the remaining bands. the experimental setup of the proposed dual-band antenna is shown in fig. 7 to measure radiation pattern and axial ratio. simulated and measured return losses of the antenna design are shown in fig. 8. the impedance bandwidth values for the proposed antenna prototype are 1470 mhz and 60 mhz, respectively, for both the generated bands. the anomalies between measured and simulated results are due to the in-house manufacturing and soldering losses. the return loss of the proposed antenna module is measured using the keysight e5071c ena series network analyzer. fig. 9 presents the measured axial ratio of the designed antenna. the lower resonant band's 3-db axial ratio (ar) bandwidth is about 11 mhz (3.17 to 3.172 ghz). the 3 db ar bandwidth is within the 10 db impedance bandwidth (overlapped), which is desirable. though the measured response is not in close agreement with the simulated response due to tolerance issues and sar, measured impedance bandwidths are about 60 mhz and 112 mhz, covering both the dual resonant bands at 900 mhz and 3.2 ghz. performance of wearable circularly polarized antenna on different high frequency... 127 (a) (b) fig. 6 fabricated textile antenna prototypes (a) front-view and (b) rear view of proposed dual band antenna fig. 7 experimental setup of proposed dual band antenna 128 r. s. r. basupalli, n. k. darimireddy, r. nalaganula, s. mandala fig. 8 measured and simulated return loss response of the proposed textile antenna fig. 9 measured axial ratio against frequency of the proposed textile antenna it is also found that the radiation pattern plots are drawn for both dual bands and observed that co-polarization patterns dominate, indicating the dual-band antenna is ideal for military applications. the measured radiation patterns are represented for jeans substrate operating at frequency of 3.17 ghz in fig. 10 and operating frequency of 5.04 ghz as shown in the fig. 11. it is found that unstable pattern at 5.04 ghz for jeans substrate. this is due to the back radiation of the monopole structure on the ground plane. performance of wearable circularly polarized antenna on different high frequency... 129 fig. 10 far field radiation patterns in xoy plane and xoz plane at 3.17ghz for jean’s cloth fig. 11 far field radiation patterns in xoy plane and xoz plane at 5.04ghz for jeans cloth the parameters covering dimensions, operating frequencies, return loss bandwidth, and axial ratio bandwidth and gain are compared with the existing design as tabulated in table 2 below. the wearable antenna proposed in this work is evaluated at a small size and operates at dual-band with circular polarization at one band. 130 r. s. r. basupalli, n. k. darimireddy, r. nalaganula, s. mandala table 2 calculated bandwidth and gain parameters of proposed wearable antenna comparing with existing structures ref. dimensions (mm2) frequency (ghz) 10-db rlbw (mhz) (%) 3-db arbw (lp/cp) gain (dbi) [8] 110×130 1.927 2.45 -6 db lp lp 0 0 [9] 120×120 2.45 5.5 4 % 16% lp lp 3 2 [11] 240×125 6.2 48% lp [14] 80×80 10 20% lp 8.5 [proposed] 40×25 3.17 5.04 60% 1.2% 11 mhz (cp) lp 4.1 5 [measured] 40×25 0.91 3.2 2% 10% lp lp 2 3.2 rlbw: return loss bandwidth, arbw:axial ratio bandwidth, lp: linearly polarized, cp: circularly polarized 4. conclusions a novel double l-shaped slit textile antenna is analyzed and developed for military wireless applications. the comparative study is performed for both fr4 and jeans dielectric and tabulated the parameters extracted. this paper majorly focuses on obtaining good cp radiation at the first band and lp at the second resonant band as obtained from multiple iterations of the antenna. moderate gain of 4.1 dbi and 5 dbi is achieved for 3.17 ghz and 5.04 ghz frequencies, respectively. displayed results show high impedance bandwidth with jean's wearable dielectric compared to the conventional fr4 substrate. it is observed that the proposed wearable antenna gives 0.2 db ar, indicating good quality cp (close to 0 db) for the resonant band. though this extended slit-based model executes tri-band cp, the radiation patterns are degraded. top and bottom layered structures with line feeding techniques conclude that the proposed prototype antenna could benefit the operating frequencies of military wireless applications. experimental evaluation and significance of the latest wearable dielectrics with different substrate thicknesses are also carried as part of future work. acknowledgement: the authors would like to thank to the advanced communications laboratory, bvrit(a), medak and also the central r & d cell, lendi iet (a) for providing the required facilities to execute the proposed work. references [1] a. kalis, t. antonakopoulos and v. maklos, "a printed circuit switched array antenna for indoor communications", ieee transactions on consumer electronics, vol. 46, no. 3, pp. 531-538, aug. 2000. [2] s. han and s. k. park, "performance analysis of wireless body area network in indoor off-body communication", ieee transactions on consumer electronics, vol. 57, no. 2, pp. 335-338, may 2011. [3] j. park and j. chun, "dtv receivers using an adaptive switched beamformer with an online-calibration algorithm", ieee transactions on consumer electronics, vol. 56, no. 1, pp. 34-41, february 2010. performance of wearable circularly polarized antenna on different high frequency... 131 [4] c. ahn, b. ahn, s. kim and j. choi, "experimental outage capacity analysis for off-body wireless body area network channel with transmit diversity", ieee transactions on consumer electronics, vol. 58, no. 2, pp. 274-277, may 2012. [5] b. zhang and f. yu, "lswd: localization scheme for wireless sensor networks using directional antenna", ieee transactions on consumer electronics, vol. 56, no. 4, pp. 2208-2216, november 2010. [6] s. koskinen, l. pykäri and m. mäntysalo, "electrical performance characterization of an inkjet-printed flexible circuit in a mobile application", ieee transactions on components, packaging and manufacturing technology, vol. 3, no. 9, pp. 1604-1610, sept. 2013. [7] b. zhang and f. yu, "lswd: localization scheme for wireless sensor networks using directional antenna", ieee transactions on consumer electronics, vol. 56, no. 4, pp. 2208-2216, november 2010. [8] p. salonen et al., "dual-band wearable textile antenna", in proceedings of the ieee antennas and propagation society international symposium, 2004, vol. 1, pp. 463-466. [9] z. shaozhen, r. langley, "dual-band wearable textile antenna on an ebg substrate", ieee transs. on ants. and propag, vol. 57, no. 4, pp. 926-935, 2009. [10] s. lingam, b. gupta, "development of textile antennas for body wearable applications and investigations on their performance under bent conditions", piers b; vol. 22, pp. 53-71, 2010. [11] k. furuya et al., "wide band wearable antenna for dtv reception," in proceedings of the 2008 ieee antennas and propagation society international symposium, 2008, pp. 1-4. [12] n. k. darimireddy, r. r. reddy, a. m. prasad, "asymmetric and symmetric modified bow‐tie slotted circular patch antennas for circular polarization", etri journal, vol. 40, no. 5, pp. 561-569, 2018. [13] n. k. darimireddy, r. r. reddy, a. m. prasad, "asymmetric triangular semi-elliptic slotted patch antennas for wireless applications", radioengineering, vol. 27, no. 1, p. 85, 2018. [14] k. x. wang and h. wong, "a wideband millimeter-wave circularly polarized antenna with 3-d printed polarizer", in ieee transactions on antennas and propagation, vol. 65, no. 3, pp. 1038-1046, march 2017. [15] i. bouhassoune, et al., "optimization of uhf rfid five-slotted patch tag design using pso algorithm for biomedical sensing systems", int. j. environ. res. public health, vol. 17, id. 8593, 2020. instruction facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 49 60 doi: 10.2298/fuee1601049m effects of pulsed negative bias temperature stressing in p-channel power vdmosfets ivica manić 1 , danijel danković 1 , vojkan davidović 1 , aneta prijić 1 , snežana đorić-veljković 2 , snežana golubović 1 , zoran prijić 1 , ninoslav stojadinović 1 1 university of niš, faculty of electronic engineering, niš, serbia 2 university of niš, faculty of civil engineering and architecture, niš, serbia abstract. our recent research of the effects of pulsed bias nbt stressing in p-channel power vdmosfets is reviewed in this paper. the reduced degradation normally observed under the pulsed stress bias conditions is discussed in terms of the dynamic recovery effects, which are further assessed by varying the duty cycle ratio and frequency of the pulsed stress voltage. the results are analyzed in terms of the effects on device lifetime as well. a tendency of stress induced degradation to decrease with lowering the duty cycle and/or increasing the frequency of the pulsed stress voltage, which leads to the increase in device lifetime, is explained in terms of enhanced dynamic recovery effects. key words: vdmosfet, nbti, pulsed bias stress, threshold voltage, lifetime 1. introduction negative bias temperature instability (nbti) has been widely recognized as one of the crucial reliability issues in state-of-the art cmos technology. specifically, p-channel devices exposed to stress with negative gate bias at increased temperatures are susceptible to threshold voltage shift due to the complex physical mechanisms involving generation of bulk oxide charge and interface traps [1]-[6]. magnitude of the observed shift strongly depends on stress parameters, such as the gate voltage, temperature, and stress time. most of the recent nbti studies have been done on devices with very thin (less than few nanometres) gate oxide films, including sio2, sion or high-k [1]-[6]. however, there is still high interest in ultra-thick oxides owing to widespread use of mos technologies for the realisation of power devices. the electric fields and temperatures typical for nbt stress can be approached during the routine operation of power mosfets in many applications [7], so the investigation of nbti in these devices, which may have gate oxide thickness ranging from several tens to 100 nm or even more, is of importance as received october 14, 2015 corresponding author: ivica manić university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: ivica.manic@elfak.ni.ac.rs) 50 i. manić, d. danković, v. davidović, et al. well. owing to its superior switching characteristics which enable operation in a megahertz frequency range, power vdmosfet (vertical double diffused mosfet) is an attractive device for application in high-frequency switching power supplies, home appliances and automotive, industrial and military electronics [8], [9]. in these applications gate bias applied during the operation switches between the “high” and “low” voltage levels, thus creating the pulsed stress conditions. earlier investigations have shown that the pulsed (also referred to as ac) nbt stress creates less significant degradation than the static (dc) stress owing to a dynamic recovery effect (a part of degradation created by the preceding stress voltage pulse is neutralized and/or annealed during the fraction of period corresponding to the “low” level of the pulsed stress voltage and has to be restored upon arrival of the next voltage pulse) [10]-[14]. accordingly, the lifetime predictions based on static nbt stress [15], [16], where the transistor was continuously kept “on”, might be wrong, and it is thus important to estimate device lifetime under the pulsed nbt stress conditions. this paper provides a review of our recent research of the effects of pulsed bias nbt stressing in p-channel power vdmosfets [17]-[20]. the dynamic recovery effects are assessed by varying the duty cycle and frequency of the pulsed stress voltage, and the results are further analyzed in terms of the effects on device lifetime. 2. results and discussion devices used in this study were commercial p-channel power vdmosfets irf9520 with current/voltage ratings of 6.8 a/100 v, encapsulated in to-220 plastic cases [21]. the devices were built in standard si-gate technology with gate oxide thickness of 100 nm, and had the initial threshold voltage, vt0, about 3.6 v. owing to the thick gate oxide, accelerated nbt stressing of these devices requires gate stress voltage amplitudes even over -40 v, which exceed capabilities of commonly used signal voltage sources [22], [23]. for that reason we have developed a specific stress and measurement system suitable for nbti testing in power mos devices, which includes an external amplifier between the stress voltage source unit and the device under test (dut) [24]. the system actually includes high voltage stress circuit and the low voltage measurement circuit, which are separated by two software-controlled switches. gate stress voltage is supplied from tektronix afg3102 source unit acting either as a dc source or a pulse generator, for the static and pulsed nbt stressing, respectively, while the drain and source terminals are grounded. the measurements of transfer i-v characteristics of dut are done by providing the sweeping gate bias from an agilent 6645a source unit, while a source-measure unit from agilent 4156c semiconductor parameter analyzer is used for drain biasing and drain current measurements. all the instrumentation and the temperature inside the heraeus hep2 chamber are computer controlled over ieee-488 gpib bus. this setup provides a complete measurement of i-v characteristic, with gate voltage swept from 4.75 v to 2 v in 50 mv steps, in about 235 ms (including the time required to switch the circuits from stress to measurement and back), which practically means that dut remains unstressed at least 235 ms for each interim measurement performed [24]. we have first done a preliminary experiment, in which the two sets of devices were stressed for 36 hours under the static and pulsed nbt stress conditions, respectively. for the static nbt stress, negative dc voltages in the range 35 45 v were applied to the gate, whereas the drain and source terminals were grounded. for the pulsed bias stress, negative effects of pulsed negative bias temperature stressing in p-channel power vdomsfets 51 gate voltage pulses (with base level of 0 v, frequency f = 10 khz, and duty cycle dtc = 50%) of the same magnitudes were used instead. stressing under both static and pulsed conditions was performed at temperatures ranging from 125 to 175 o c. typical subthreshold transfer i-v characteristics of p-channel power vdmosfets subjected to the static and pulsed nbt stressing are shown in fig. 1, (a) and (b), respectively. the transfer i­v characteristics were measured at the drain voltage value of 100 mv, so the devices were kept in the linear region of operation. during the 36 hour stress, a total of 39 interim measurements were done according to a specified timeline, but for simplicity only the initial (before stress) and final (after stress) characteristics measured at room (27 o c) and stress temperature (175 o c) are shown. as can be seen, the characteristics are being shifted along the vgs axis towards the higher vgs voltages as a consequence of stress-induced build-up of oxidetrapped charge. at the same time, the slope of the characteristics slightly decreases, indicating that interface traps and/or near interface oxide traps, known as border traps or switching oxide traps, are generated as well. it also can be seen that the shifts caused by the pulsed nbt stressing are smaller than those found in the case of static nbt stressing. fig. 1 transfer i-v characteristics of p-channel power vdmosfets measured before and after (a) static and (b) pulsed (f=10khz, dtc=50%) nbt stressing. in line with observed shifts of transfer characteristics along the voltage axis, nbt stressing was found to cause significant threshold voltage shifts (∆vt). threshold voltage values were calculated from the measured i-v characteristics using the second derivative method [25]. two characteristic sets of data (for different stress voltages at 175 c and at different temperatures for stress voltage of 45 v) for the stress-induced threshold voltage shifts found during the static and pulsed nbt stressing of irf9520 p-channel vdmosfets are shown in fig. 2. as can be seen, nbt stressing under both static and pulsed bias conditions was found to cause significant threshold voltage shifts, which were more pronounced at higher voltages and/or temperatures. in addition, it can be seen that the pulsed voltage stressing caused generally lower shifts as compared to static stressing performed at the same temperature with equal stress voltage magnitude. 52 i. manić, d. danković, v. davidović, et al. the lower shifts observed in the case of the pulsed nbt stress can be explained by two factors associated with the nature of pulsed stressing itself. the first factor is assessed by taking into account that “stress time” in fig. 2 refers to the total time, which includes fractions of the periods corresponding to both “high” and “low” levels of the pulsed gate voltage applied. however, the devices are actually stressed only during the fraction of period corresponding to the “high” voltage level (on-time), so the actual or net stress time is significantly shorter (and the resulting stress-induced threshold voltage shifts appear both slower and lower) in the cases of pulsed stress than in the case of static one. the other factor could be a partial recovery of threshold voltage during the period fractions corresponding to the “low” level of the pulsed stress voltage (off-time), which also contributes to the smaller shifts observed in the cases of pulsed bias stress. the partially recovered degradation is restored again on arrival of each new stress voltage pulse, so the phenomenon is referred to as dynamic recovery [26]. fig. 2 threshold voltage shifts in p-channel power vdmosfets during the static and pulsed (f = 10 khz, dtc = 50%) nbt stressing. to evaluate dynamic recovery effects during the pulsed bias stressing it is necessary to alleviate the first factor mentioned above, which is commonly done by plotting the threshold voltage shift as a function of the net stress time rather than the total time. acordingly, fig. 3 shows the results for threshold voltage shifts versus the net stress time, where the net stress time in the case of pulsed stressing was calculated by multiplying the total stress time with the value of duty cycle ratio (50% for the pulsed stress in this case). these results show that, for corresponding values of the net stress time, the stress induced threshold voltage shifts under the static stress remain much higher (approximately three times) than in the case of pulsed nbt stress. this clearly indicates that δvt time dependencies in figs. 2 and 3 have been affected by the partial recovery of threshold voltage during the period fractions corresponding to the “low” level of the pulsed stress voltage. effects of pulsed negative bias temperature stressing in p-channel power vdomsfets 53 fig. 3 threshold voltage shifts in p-channel vdmosfets during the static and pulsed (f = 10 khz, dtc = 50%) nbt stressing vs. the net stress time. further insight into the dynamic recovery effect was obtained by varying the duty cycle ratio and frequency of the pulsed voltage used for device stressing. the results of stressing with three different duty cycle pulses (75%, 50%, and 25%) at 10 khz and those of static stress are shown in fig. 4, where the net stress time in the cases of pulsed stressing was calculated by multiplying the total stress time with corresponding duty cycle value for each specific case. the overall net stress time was 6 h in all cases, and all devices were stressed with the same gate voltage magnitude (45 v) at 175 c. as can be seen, the nbt stress-induced threshold voltage shifts are most significant in the case of the static stress and clearly decrease with reducing the duty cycle in the cases of the pulsed bias stress. this is clear indication that dynamic recovery effects become more pronounced when the pulsed gate voltage with fig. 4 threshold voltage shifts in p-channel vdmosfets vs. net stress time at various duty cycles (nbt stress: vg= 45 v, t = 175 c, f = 10 khz). 54 i. manić, d. danković, v. davidović, et al. lower duty cycle ratio was applied. however, it should be noted that frequency remains constant, so variations in duty cycle change the ratio between the pulse and no-pulse fractions of the period: the lower duty cycle actually means shorter pulses and longer breaks in between the pulses, which further means shorter stress time and longer recovery time during each period of pulsed stress voltage applied. accordingly, there is less time to create degradation during a single period and more time for recovery, so the overall resulting degradation found after stressing for equal net stress times tends to decrease with reducing the duty cycle. therefore, it can be speculated that overall degradation tends to decrease with duty cycle reduction because of two combined effects: one is creation of lesser degradation because the pulses are getting shorter, while the other effect can be identified as the enhanced dynamic recovery because the period fractions between the two pulses are getting longer. threshold voltage shifts observed in devices stressed with three different frequency pulses (1, 10 and 100 khz) in comparison with those obtained by static stress are shown in fig. 5. all devices were stressed with the same gate voltage magnitude (45 v) at 175 c, and the overall net stress time was 6 h in all cases again. a duty cycle was kept at 50% for the pulsed stressing at all frequencies, so the net stress time in these cases was equal to a half of the total stress time. again, the stress-induced threshold voltage shifts are most significant in the case of the static stress, and it is interesting to note that they clearly decrease with increasing the frequency in the cases of the pulsed bias stress. so, the dynamic recovery effects seem to become more pronounced with increasing the frequency of the gate voltage applied, even though the change of frequency at constant duty cycle practically does not affect the ratio between the pulse and no-pulse fractions of the period at all. however, the increase in frequency means that the pulses themselves and the fractions of period between the pulses simultaneously become shorter, which further means that there is less time to create degradation and also less time for recovery during each period of the pulsed voltage applied. accordingly, one may expect the resulting degradation would be nearly independent of frequency, as reported in [27], [28], but in our case degradation apparently decreases with fig. 5 threshold voltage shifts in p-channel vdmosfets vs. net stress time at various frequencies (nbt stress: vg=45 v, t=175 o c, dtc=50%). effects of pulsed negative bias temperature stressing in p-channel power vdomsfets 55 increasing the frequency, as reported more recently in [29]. the advanced measurement techniques for nbti characterization have been developed rather recently, which might be the reason for inconsistency of the data reported here and in [29] with those found in less recent publications [27], [28]. a possible explanation for why the degradation decreases with increasing the frequency could be as follows. the pulses at low frequencies are long enough to allow for creation of rather significant amount of the slow and/or non-recoverable component of degradation, which is hardly removed in the fraction of period between the pulses. the amount of this component decreases at higher frequencies, while that of the fast component increases, and the latter is more easily removed even though the fraction of period between the pulses becomes shorter. as a result, the dynamic recovery effects become more pronounced and overall degradation tends to decrease with increasing the frequency. nbti can put serious limit to a device lifetime, so one of the main goals of our nbti studies was to estimate the normal operation lifetime of investigated p-channel power vdmosfets by using the experimental data obtained under the accelerated nbt stress conditions. considering the above differences in the observed effects between the static and pulsed nbt stressing, the predictions based on the results of static nbt stressing [15], [16] may underestimate the lifetime, so the proper approach is to assess the lifetime under the pulsed nbt stress conditions, which are closer to those met by devices in real applications. our experimental devices were the power transistors, so we could assume maximum normal bias and temperature to be, for example vg = -20 v and t = 100 o c. either of several device electrical parameters, such as threshold voltage, transconductance, or drain current, can be used as degradation monitor for the lifetime estimation [30], [31]. threshold voltage is widely accepted as a well-suited parameter, so in our studies we have used the experimental results for the nbt stress-induced δvt to estimate the device lifetime in practical operation. the procedure of lifetime estimation consists of two steps: experimental values of the lifetime are extracted first, and these values are then used for extrapolation to normal conditions. experimental lifetime is defined as the stress time required for the stress-induced δvt to reach some predetermined value, which is called failure criterion (fc). in our case we defined fc as the threshold voltage shift of 50 mv. the extraction of experimental lifetime values from our data for stress voltage magnitude vg = -45 v at different temperatures is illustrated in fig. 6. as can be seen, lifetime values extracted from the static nbt stress data (1, , 3) are significantly shorter than those extracted from the corresponding pulsed stress data (4, 6). there are several well-established models for extrapolation along the voltage or electric field axis, such as “vg”, “1/vg” and “power-law” models [32], [33], which are based on corresponding degradation models for the threshold voltage shifts. the “1/vg” and other models for extrapolation along the voltage or electric field axis can be used to estimate the device lifetime and ten year operation voltage (the maximum operation voltage providing 10 years of device operation without failure) only at temperatures applied during accelerated stressing, which are generally higher than actual temperatures found in device normal operation mode. estimates obtained by these models are very useful as the worst case expectations, but it could be even more useful if possible to have 56 i. manić, d. danković, v. davidović, et al. fig. 6 extraction of experimental lifetime from the threshold voltage shift time dependencies recorded during the nbt stressing with gate voltage vg = 45 v at different temperatures. lifetime estimates for normal operation temperatures. trying to resolve this issue, we have proposed extrapolation along the temperature axis [34]. a model for this extrapolation can be derived from any of several degradation models for nbt stress-induced threshold voltage shifts, which all include the arrhenius temperature acceleration factor, and can be expressed as [34]: )/exp( tba  , (1) where a and b are the fitting parameters taken from the initial degradation model. the above expression has the same mathematical form as the one describing the standard “1/vg” model, so the proposed model was called “1/t” model. the “1/t” model requires experimental lifetime values extracted from the data for nbt stressing performed with the same voltage magnitude at several different temperatures, such as those plotted in fig. 6. the lifetime estimation by means of this model is illustrated in fig. 7. only extrapolation to t = 100 c (which seems rather realistic for operation of power devices) is shown, but the procedure can be used to estimate the lifetime by extrapolation to any other reasonable operation temperature. in analogy with the “1/vg” model, extrapolation procedure employed by the “1/t” model additionally allows us to estimate a new reliability parameter, which is called a “ten year operation temperature”, t10y, and is defined as maximum temperature that allows 10 years of device operation with stress-induced δvt below fc. as can be seen in fig. 7, “1/t” model yields significant differences between the effects of static and pulsed nbt stress. the lifetime at 100 c is more than two orders of magnitude higher under the pulsed bias conditions (lifetime p ) than under the static ones (lifetime s ). also, the ten year operation temperature is about 25 c higher in the case of exposure to pulsed voltage stressing (t p 10y) than in the case of static one (t s 10y). these observations are completely in line with those obtained by means of “1/vg” model [18]. an expectation based on the above results is that the use of lower duty cycle gate voltage pulses for switching (which of course has to conform to specific requirements of effects of pulsed negative bias temperature stressing in p-channel power vdomsfets 57 fig. 7 extrapolation to normal operation temperature by means of “1/t” model to estimate the lifetime and ten year operation temperature in p-channel power vdmosfets subjected to static and pulsed nbt stressing. the circuit the investigated devices are to be used in) could lead to a longer device lifetime. this expectation is confirmed by the data in fig. 8, which shows the nbt stressinduced threshold voltage shifts in devices subjected to the static and pulsed stressing under different duty cycles at f = 10 khz. as can be seen, the pulsed nbt stress caused significant threshold voltage shifts, which were more pronounced at higher duty cycles, but still lower than those caused by the static stress. the figure additionally illustrates that stress time required for stress-induced threshold shift to reach the predetermined value of fc increases with decreasing the duty cycle, so the experimental values of device lifetime increase with decreasing the duty cycle as well (1s < 175% < 150% < 125%), and the fig. 8 threshold voltage shifts in p-channel power vdmosfets subjected to the pulsed nbt stress at different duty cycles, f=10 khz with corresponding experimental lifetime values indicated. 58 i. manić, d. danković, v. davidović, et al. actual lifetime under the normal operation conditions is expected to increase likewise. this can be explained in terms of the mechanisms responsible for nbt stress-induced degradation. threshold voltage shifts related to nbti are known to originate from underlying buildup of oxide-trapped charge and interface traps due to stress-initiated electrochemical processes involving oxide and interface defects, holes, and various species associated with presence of hydrogen as a common impurity in mos devices [1]-[6], [12][14], [35]-[37]. in the case of pulsed voltage applied to the gate, devices are sequentially subjected to stress and no-stress conditions, where the actual stress time depends on pulse frequency and duty cycle. the actual stress time apparently decreases with decreasing the duty cycle, so the resulting degradation associated with stress-induced generation of oxidetrapped charge and interface traps must decrease as well, whereas the device lifetime consequently increases. 3. conclusion the results of our recent research of the effects of pulsed bias nbt stressing in pchannel power vdmosfets have been reviewed in this paper. the reduced degradation normally observed under the pulsed stress bias conditions has been discussed in terms of the dynamic recovery effects, which are further assessed by varying the duty cycle ratio and frequency of the pulsed stress voltage. the stress-induced degradation was shown to decrease with reducing the duty cycle and increasing the frequency of the pulsed stress voltage. the results were analyzed in terms of the effects on device lifetime as well. a tendency of the stress induced degradation to decrease with lowering the duty cycle and/or increasing the frequency, which has resulted into the increase in device lifetime, was explained in terms of the enhanced dynamic recovery effects. acknowledgement: this work has been supported by the ministry of education, science and technological development of the republic of serbia, under the projects oi-171026 and tr32026, and in part by ei pcb factory, niš, serbia. references [1] d.k. schroder, j.a. babcock, “negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing”, j. appl. phys., vol. 94, pp. 118, 2003. [2] j.h. stathis, s. zafar, “the negative bias temperature instability in mos devices: a review”, microelectron. reliab., vol. 46, pp. 270286, 2006. [3] s. ogawa, m. shimaya, n. shiono, “interface-trap generation at ultrathin sio2 (46 nm)-si interfaces during negative-bias temperature aging”, j. appl. phys., vol. 77, pp. 11371148, 1995. [4] v. huard, m. denais, c. parthasarathy, “nbti degradation: from physical mechanisms to modeling”, microelectron. reliab., vol. 46, pp. 123, 2006. [5] m.a. alam, s.a. mahapatra, “a comprehensive model of pmos nbti degradation”, microelectron. reliab., vol. 45, pp. 7181, 2005. [6] s. mahapatra, n. goel, s. desai, s. gupta, b. jose, s. mukhopadhyay, k. joshi, a. jain, a.e. islam, m.a. alam, “a comparative study of different physics-based nbti models”, ieee trans. electron devices, vol. 60, no. 3, pp. 901916, 2013. [7] s. gamerith, m. pölzl, “negative bias temperature stress in low voltage p-channel dmos transistors and role of nitrogen”, microelectron. reliab., vol. 42, pp. 14391443, 2002. effects of pulsed negative bias temperature stressing in p-channel power vdomsfets 59 [8] b.j. baliga, fundamentals of semiconductor power devices, new york: springer, 2008. [9] v. benda, j. gowar, d.a. grant, power semiconductor devices, new york: john wiley, 1999. [10] m.a. alam, “a critical examination of the mechanisms of dynamic nbti for pmosfets“, in iedm techn. dig., 2003, pp. 345-348. [11] r. fernández, b. kaczer, a. nackaerts, s. demuynck, r. rodríguez, m. nafria, g. groeseneken, “ac nbti studied in the 1 hz – 2 ghz range on dedicated on-chip cmos circuits”, in iedm techn. dig., 2006, pp. 1-4. [12] s. mahapatra, a. e. islam, s. deora, v. d. maheta, k. joshi, a. jain, m. a. alam, “a critical reevaluation of the usefulness of r-d framework in predicting nbti stress and recovery”, in proc. international reliability physics symposium (irps), 2011, pp. 614-623. [13] h. reisinger, t. grasser, k. ermisch, h. nielen, w. gustin, c. schlünder, “understanding and modeling ac bti”, in proc. international reliability physics symposium (irps), 2011, pp. 597-603. [14] s. desai, s. mukhopadhyay, n. goel, n. nanaware, b. jose, k. joshi, s. mahapatra, “a comprehensive ac/dc nbti model: stress, recovery, frequency, duty cycle and process dependence”, in proc. international reliability physics symposium (irps), 2013, pp. xt.2.1 – xt.2.11. [15] d. danković, i. manić, s. djorić-veljković, v. davidović, s. golubović, n. stojadinović, “nbt stressinduced degradation and lifetime estimation in p-channel power vdmosfets”, microelectron. reliab. vol. 46, pp. 1828-1833, 2006. [16] n. stojadinović, d. danković, i. manić, v. davidović, s. djorić-veljković, s. golubović, “impact of negative bias temperature instabilities on lifetime in p-channel power vdmosfets”, in proc. telsiks 2007 conf., 2007, pp. 275-282. [17] n. stojadinović, d. danković, i. manić, a. prijić, v. davidović, s. djorić-veljković, s. golubović, z. prijić, “threshold voltage instabilities in p-channel power vdmosfets under pulsed nbt stress”, microelectron. reliab. vol. 50, pp. 1278-1282, 2010. [18] i. manić, d. danković, a. prijić, v. davidović, s. djorić-veljković, s. golubović, z. prijić, n. stojadinović, “nbti related degradation and lifetime estimation in p-channel power vdmosfets under the static and pulsed nbt stress conditions”, microelectron. reliab. vol. 51, pp. 1540-1543, 2011. [19] d. danković, i. manić, v. davidović, a. prijić, s. djorić-veljković, s. golubović, z. prijić, n. stojadinović, “lifetime estimation in nbt stressed p-channel power vdmosfets”, facta universitatis, series: automatic control and robotics, vol. 11, pp. 15-23, 2012. [20] i. manić, d. danković, a. prijić, z. prijić, n. stojadinović, “measurement of nbti degradation in pchannel power vdmosfets”, informacije midem, journal of microelectronics, electronic components and materials. vol. 44, pp. 280-287, 2014. [21] “irf9520n,” data sheet, international rectifier, [online]. available: http://www.irf.com/productinfo/datasheets/data/irf9520npbf.pdf [22] tektronix, inc., “high amplitude arbitrary/function generator simplifies measurement in automotive, semiconductor, scientific and industrial applications,” application note, [online]. available: http://www.tektronix.com/afg3000, 2008. [23] agilent technologies inc., “agilent 4156c precision semiconductor parameter analyzer“, data sheet, p.5. [online]. available: http://www.agilent.com, 2009. [24] a. prijić, d. danković, lj. vračar, i. manić, z. prijić, n. stojadinović, “a method for negative bias instability (nbti) measurements on power vdmos transistors”, measure. sci. and technol., vol.23, 085003 (8 pp.), 2012. [25] a. ortiz-conde, f.-j. garcıa sanchez, j.j. liou, a. cerdeira, m. estrada, y. yue, “a review of recent mosfet threshold voltage extraction methods”, microelectron. reliab., vol. 42, pp. 583–596, 2002. [26] m.a. alam, “a critical examination of the mechanisms of dynamic nbti for pmosfets“, in technical digest of the iedm 2003, usa, pp. 345348, 2003. [27] g. chen, m.f. li, c.h. ang, j.z. zheng, d.l. kwong, “dynamic nbti of p-mos transistors and its impact on mosfet scaling”, ieee electron. dev. lett., vol. 42, pp. 734–736, 2002. [28] m.f. li, g. chen g, c. shen, x.p. wang, h.y. yu, y.c yeo et al., “dynamic bias temperature instability in ultrathin sio2 and hfo2 metal-oxide-semiconductor field effect transistor and its impact on device lifetime”, jpn. j. appl. phys., vol. 43(11b), pp. 78077814, 2004. [29] t. nigam, “pulse-stress dependence of nbti degradation and its impact on circuits”, ieee trans. device mater. reliab., vol. 9, pp. 72–78, 2008. [30] c. schlunder, r. brederlow, b. ankele, w. gustin, k. goser, r. thewes, “effects of inhomogeneous negative bias temperature stress on p-channel mosfets of analogue and rf circuits”, microelectron. reliab., vol. 45, pp. 39-46, 2005. http://www.sciencedirect.com/science/article/pii/s0026271404001714?_rdoc=6&_fmt=high&_origin=browse&_srch=doc-info(%23toc%235751%232005%23999549998%23531072%23fla%23display%23volume)&_docanchor=&_ct=25&_reflink=y&_zone=rslt_list_item&md5=c7ff3b6c50da9e9ebaf551454c7d6b7e http://www.sciencedirect.com/science/article/pii/s0026271404001714?_rdoc=6&_fmt=high&_origin=browse&_srch=doc-info(%23toc%235751%232005%23999549998%23531072%23fla%23display%23volume)&_docanchor=&_ct=25&_reflink=y&_zone=rslt_list_item&md5=c7ff3b6c50da9e9ebaf551454c7d6b7e 60 i. manić, d. danković, v. davidović, et al. [31] s.s. tan, t.p. chen, c.h. ang, l. chan, “mechanism of nitrogen-enhanced negative bias temperature instability in pmosfet”, microelectron. reliab., vol. 45, pp. 19-30, 2005. [32] m. ershov, s. saxena, s. minehane, p. clifton, m. redford, r. lindley, h. karbasi, s. graves, s. winters, “degradation dynamics, recovery, and characterization of negative bias temperature instability”, microelectron. reliab., vol. 45, pp. 99-105, 2005. [33] h. aono, e. murakami, k. okuyama, a. nishida, m. minami, y. ooji, k. kubota, “modeling of nbti saturation effect and its impact on electric field dependence of the lifetime”, microelectron. reliab., vol. 45, pp. 1109-1114, 2005. [34] d. danković, i. manić, v. davidović, s. djorić-veljković, s. golubović, n. stojadinović, “new approach in estimating the lifetime in nbt stressed p-channel power vdmosfets”, in proc. miel 2008 conference, 2008, pp. 599-602. [35] n. stojadinović, d. danković, s. djorić-veljković, v. davidović, i. manić, s. golubović, “negative bias temperature instability mechanisms in p-channel power vdmosfets”, microelectron. reliab., vol. 45, pp. 13431348, 2005. [36] d. danković, i. manić, v. davidović, s. djorić-veljković, s. golubović, n. stojadinović, “negative bias temperature instabilities in sequentially stressed and annealed p-channel power vdmosfets”, microelectron. reliab., vol. 47, pp. 14001405, 2007. [37] i. manić, d. danković, s. djorić-veljković, v. davidović, s. golubović, n. stojadinović, “effects of low gate bias annealing in nbt stressed p-channel power vdmosfets”, microelectron. reliab., vol. 49, pp. 10031007, 2009. http://www.sciencedirect.com/science/article/pii/s0026271404001696?_rdoc=4&_fmt=high&_origin=browse&_srch=doc-info(%23toc%235751%232005%23999549998%23531072%23fla%23display%23volume)&_docanchor=&_ct=25&_reflink=y&_zone=rslt_list_item&md5=33b3b8e1247f1f16344621033801b279 http://www.sciencedirect.com/science/article/pii/s0026271404001696?_rdoc=4&_fmt=high&_origin=browse&_srch=doc-info(%23toc%235751%232005%23999549998%23531072%23fla%23display%23volume)&_docanchor=&_ct=25&_reflink=y&_zone=rslt_list_item&md5=33b3b8e1247f1f16344621033801b279 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http://www.sciencedirect.com/science/article/pii/s0026271404005220?_rdoc=8&_fmt=high&_origin=browse&_srch=doc-info(%23toc%235751%232005%23999549992%23598770%23fla%23display%23volume)&_docanchor=&_ct=33&_reflink=y&_zone=rslt_list_item&md5=421f1400fc4e003ddbefc1485a9f22b0 13626 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 137 148 https://doi.org/10.2298/fuee2601137k © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper signed multiplication architecture using vedic urdhva tiryagbhyam algorithm dharamvir kumar1, manoranjan pradhan1, neeraj kumar misra2, bandan kumar bhoi1 1department of electronics and telecommunication, veer surendra sai university of technology, burla, sambalpur 768018, odisha, india 2school of electronics engineering, vit-ap university, amaravati, andhra pradesh 522237, india orcid id: dharamvir kumar https://orcid.org/0000-0001-8941-3917 manoranjan pradhan https://orcid.org/0000-0003-4520-5280 neeraj kumar misra https://orcid.org/0000-0002-7907-0276 bandan kumar bhoi https://orcid.org/0000-0003-2916-2903 abstract. this paper introduces a novel architecture for signed multiplication, representing a significant advancement in vlsi design for high-end computation. we have implemented signed number multiplier numbers using the urdhva tiryagbhyam (ut) algorithm. the purpose of the proposed architecture is to overcome the limitations of previous approaches, through the integration of virtex-7 and spartan-7 hardware, in addition to improving power and delay performance. as a result of using vertical and crosswise techniques, the proposed parallel multiplication scheme for signed numbers is implemented in this paper. we have synthesized and simulated this structure using vivado 2020.1 software and virtex-7 and spartan-7 fpga devices for low-power vlsi computational applications, such as checking the speed and delay of the design postlayout. a comparison is made between the proposed design and existing architectures in terms of area, delay, and power consumption. according to the results, the proposed architecture improves speed by 40% over prior architectures. for faster computing applications, a high-speed proposed multiplier will be useful for complex design architecture. the work contributes significantly to the improvement of high-performance computing and digital signal processing. key words: computational, vedic multiplier, high performance computing, fpga, system design; urdhva tiryagbhyam received april 19, 2025; revised june 22, 2025; accepted july 29, 2025 corresponding author: neeraj kumar misra school of electronics engineering, vit-ap university, amaravati, andhra pradesh 522237, india e-mail: neeraj.misra@vitap.ac.in https://orcid.org/0000-0001-8941-3917 mailto:neeraj.misra@vitap.ac.in 138 d. kumar, m. pradhan, n. k. misra, b. k. bhoi 1. introduction in vlsi system design, multipliers are the basic building blocks for many operations such as filtering and microprocessor design [1]. the multiplier block is used in the convolution process when different signals are filtered through it. an integer multiplier block is used for large integer multiplicities in cases of encryption and decryption of information in applications that use public key cryptography to protect sensitive information. further, the performance of the processor is determined by the speed of the multiplication operation. most of the processors have included multiplier blocks as part of their processor architectures. most of the research targets low power multiplier design and improves the performance parameters such as the area, computational delay, and power consumption. in vedic mathematics, there are sixteen sutras, including the ut algorithm [2]. the authors [3] and [4] have compared both the nikhilam and urdhva tiryagbhyam algorithms and claim that the nikhilam multiplier is faster. in addition, [5], [6], [7], and [8] provide efficient vedic multiplier implementations. in spite of this, their works are restricted to unsigned numbers. in addition, there is no discussion of signed implementation. many real-time systems and imageprocessing applications can be implemented using the vedic method presented in [9]. in comparison to array multipliers and booth multipliers, the design is faster [9]. however, there has been no discussion of how signed numbers will be implemented. the authors of [10] demonstrate how their squaring algorithm improved in terms of area and speed by implementing the squaring technique. their structure, however, is limited to unsigned numbers. in [11], authors used compressors to reduce the combinational delay time of their proposed multiplier and claimed better speed over conventional designs. a wide variety of research has been done on adders and multipliers, such as [12], [13], [14], [15] and [16]. multiplier and square implementations as [12] and [13] are useful for unsigned operands. in previous work [14], the vedic algorithm was used to implement efficient asic and fpga cube architectures. in addition to signed numbers, this implementation can also be used with unsigned numbers. there is, however, a redundant binary number system used in the implementation of signed multi-pliers in [15]. the nikhilam algorithm was used in [16] for the computation of signed multipliers. in [17], the ut method is used to design a vedic multiplier. based on the zynq 7000 fpga board, the authors of [18] implemented a 32-bit wallace multiplier and a 32-bit systolic multiplier. however, there is no discussion of the realization of signed operands. the authors of [19] have also used both unsigned-signed and signed-unsigned converters to support signed implementation. their paper discusses the use of quantum-dot cellular automata (qca) technology to implement a two-bit vedic multiplier. in this paper, the ut algorithm is used to design a signed multiplication architecture. in addition to overcoming previous limitations, the proposed architecture also improves performance. this research paper contributions include: ▪ we investigate the design of a signed multiplier utilizing the ut algorithm that offers speed improvement to the prior reported design. ▪ parallel generation of vertical and sequential partial products, we eliminate the need for sequential calculation of partial products, which reduces the overall combinational path delay of the multiplier. ▪ parallel addition of partial products: the partial products are added in parallel which also provides significant critical path delay reduction. ▪ novel architecture for signed multiplier: the contributions in the context of vedic multiplication algorithms, represent significant advances in the field of signed multiplication. this paper introduces a novel architecture for signed multiplication, signed multiplication architecture using vedic urdhva tiryagbhyam algorithm... 139 representing a key advancement in the field of signed multiplication. using the ut algorithm and extending it to handle signed numbers, the proposed architecture not only overcomes previous limitations but also improves performance. ▪ parallel generation of vertical and sequential partial products: one noteworthy improvement is the removal of the requirement for the sequential calculation of partial products. the suggested architecture lowers the multiplier's overall combinational path latency by permitting the concurrent creation of vertical and sequential partial products. this method of parallel processing improves throughput and computational efficiency. ▪ parallel addition of partial products: the parallel addition of partial products makes an additional important contribution. the suggested architecture delivers notable reductions in critical path delay by adding partial products in parallel. the multiplier's overall performance is significantly improved by this parallel processing strategy. in the context of fpga-based design, this proposed methodology can provide advantages such as: 1. resource efficiency: a ut algorithm optimizes fpga resources for highperformance multiplication while making better use of fpga resources. 2. high-speed operation: a fpga-based system allows fast multiplication operations, which are essential for signal processing, cryptography, and digital signal processing. 3. low power consumption: in many applications, particularly those with portable or battery-powered components, efficient multiplication algorithms reduce power consumption. the rest of the paper is divided into sections. section 2 shows ut algorithm basic and examples for signed multiplication architecture. section 3 shows the proposed architecture of signed multiplier. a comparison and implementation results are presented in section 4. in section 5, a conclusion is drawn. 2. urdhva tiryagbhyam algorithm there are two classes of numerical values in computer science and mathematics: unsigned and signed numbers. the following is a brief summary of each classification: there are only non-negative values that can be represented using unsigned numbers when they are unsigned. in this case, the range begins at zero and continues exclusively with positive values; the sign bit is not included in their range. an example of a binary encoding would be the use of all available bits to indicate the magnitude of the number; no bit is set aside to indicate the sign of the number in binary encoding. for an 8-bit unsigned integer include 0, 1, 2, 3..., 255. signed numbers have the ability to represent both positive and negative values. they have a sign bit in them that establishes the number's sign. usually, the sign is indicated in the leftmost bit, which is also the most crucial bit. the representation: binary representation uses the two's complement representation to describe the magnitude of the number, with the leftmost bit serving as the sign bit (0 for positive, 1 for negative). for an 8-bit signed integer, the values are -128, -127, -2, -1, 0, 1, 2, 127. in comparison, when compared to signed numbers with the same number of bits, unsigned numbers have a simpler representation and can represent a larger positive range. a signed number can represent either positive or negative values, making it more versatile but also requiring specific representations and arithmetic considerations. the use of unsigned numbers is common when only non-negative values are relevant, such as when representing quantities, indices, or measurements. when positive and negative values need to 140 d. kumar, m. pradhan, n. k. misra, b. k. bhoi be represented, such as in arithmetic calculations or financial transactions, signed numbers are used. the meaning of the ut algorithm is vertical and crosswise technique. the proposed architecture computes vertical and crosswise partial products in parallel. further, partial products are also added in parallel to provide significant critical path delay reduction. for signed multiplication utilizing an unsigned multiplier, multiplicand, and multiplier are converted to 2’s complement form. the product can be either unsigned or signed form. for signed products, it is further converted using 2’s complement method to unsigned form. so, two additional converters, one for unsigned-signed and the other for signed-unsigned are required which increases the critical path delay and area of signed multiplier. further, most of the earlier reported vedic multipliers are based on unsigned numbers. in this study, we have tried to extend the proposed architecture for signed numbers. by extending a vedic multiplier architecture originally intended for unsigned numbers to support signed integers, additional complexity is introduced in terms of conversion logic, critical route time, and area utilization. although these difficulties can be overcome, it requires careful consideration and trade-offs to ensure effective operation that supports both signed and unsigned arithmetic. 2.1. equations for ut algorithm the product of two numbers 𝑎𝑥 + 𝑏 and 𝑐𝑥 + 𝑑 i.e., 𝑥2𝑎𝑐 + 𝑥(𝑎𝑑 + 𝑏𝑐) + 𝑏𝑑 is derived from the ut algorithm as: 1. the coefficient of x2 is the vertical multiplication of a and c. 2. the coefficient of x is the by the crosswise multiplication of a with d and b with c, along with an addition operation of both products. 3. the constant term is the vertical multiplication of b with d. the mathematical formula for the urdhva tiryagbhyam algorithm for 2-digit and 3-digit multiplication are shown in equations 1 and 2 respectively. where x represents as base. for two digits numbers, let x=ax+b and y=cx+d, so, multiplication of x and y 𝑃 = 𝑋 × 𝑌 = (𝑎𝑥 + 𝑏) × (𝑐𝑥 + 𝑑) = 𝑎𝑥(𝑐𝑥 + 𝑑) + 𝑏(𝑐𝑥 + 𝑑) = 𝑎𝑐𝑥2 + 𝑎𝑑𝑥 + 𝑏𝑐𝑥 + 𝑏𝑑 = 𝑎𝑐𝑥2 + (𝑎𝑑 + 𝑏𝑐)𝑥 + 𝑏𝑑 (1) similarly, for three digits numbers, let 𝑋 = (𝑎1𝑥2 + 𝑏1𝑥 + 𝑐1) and 𝑌 = (𝑎2𝑥2 + 𝑏2𝑥 + 𝑐2), multiplication of x and y 𝑃 = 𝑋 × 𝑌 = (𝑎1𝑥2 + 𝑏1𝑥 + 𝑐1) ∗ (𝑎2𝑥2 + 𝑏2𝑥 + 𝑐2) = 𝑎1𝑥2(𝑎2𝑥2 + 𝑏2𝑥 + 𝑐2) + 𝑏1𝑥(𝑎2𝑥2 + 𝑏2𝑥 + 𝑐2) + 𝑐1(𝑎2𝑥2 + 𝑏2𝑥 + 𝑐2) = (𝑎1𝑎2)𝑥4 + (𝑎1𝑏2𝑥3 + 𝑎2𝑏1𝑥3) + (𝑎1𝑐2𝑥2 + 𝑏1𝑏2𝑥2 + 𝑎2𝑐1𝑥2) + (𝑏1𝑐2𝑥 + 𝑏2𝑐1𝑥) + 𝑐1𝑐2 = 𝑥4(𝑎1𝑎2) + 𝑥3(𝑎1𝑏2 + 𝑎2𝑏1) + 𝑥2(𝑎1𝑐2 + 𝑏1𝑏2 + 𝑎2𝑐1) + 𝑥(𝑏1𝑐2 + 𝑏2𝑐1) + 𝑐1𝑐2 (2) signed multiplication architecture using vedic urdhva tiryagbhyam algorithm... 141 the decimal ut algorithm for two-digit numbers x=ax+b and y=cx+d and their product xy=p3p2p1 can be represented in the following steps: step 1: the base (x) is taken as 10. step 2: p1 (vertical multiplication) =b x d. step 3: p2 (crosswise multiplication and addition) = a x d + b x c. step 4: p3 (vertical multiplication) =a x c. step 5: final product p=x×y = concatenation of p3, p2 and p1=p3p2p1 initially, base (radix) is taken as (10)10. the final product consists of the concatenation of p3, p2, and p1. p1 is computed by vertical multiplication of b and d. the addition of cross multiplication of a with d and b with c is p2. similarly, p3 is the vertical multiplication of a with c. final product p is the concatenation of p3, p2 and p1. let the two-digit numbers are x=12=1x10 +2 and y=13= 1x10 +3 1. for the decimal ut algorithm, the base (x) is taken as 10. 2. p1 (vertical multiplication) =b x d= 2 x 3= 6 3. p2 (crosswise multiplication and addition) = a x d + b x c = 1x3 +2x1=5 4. p3 (vertical multiplication) =a x c= 1x1 = 1 5. final product p=x×y = concatenation of p3, p2 and p1=p3p2p1 = (1,5,6) =156 the base is taken as (10) 10. unit digit 2 of number x is vertically multiplied with the unit digit 3 of number y to get partial product 6 (p1). the cross multiplication of the tenth digit 1 of number x with unit digit 3 of number y is added with the cross multiplication of unit digit 2 of number x with tenth digit 1 of number y to get partial product 5 (p2). similarly, the tenth digit 1 of number x is vertically multiplied by the tenth digit 1 of number y to get partial product 1(p3). final product 156 (p) is the concatenation of 1(p3), 5 (p2) and 6 (p1). let the two-digit numbers are x=12=1x10 +2 and y=-13= (-1) x10 +(-3) 1. for the signed decimal ut algorithm, the base (x) is taken as 10. 2. p1 (vertical signed multiplication) =b x d= 2 x (-3) = -6 3. p2 (crosswise signed multiplication and addition) = a x d + b x c = 1x (-3) +2x (-1) = -5 4. p3 (vertical signed multiplication) =a x c= 1x (-1) = -1 5. final product p= x×y = concatenation of p3, p2 and p1=p3p2p1 = (-1, -5, -6) =-156 the base is taken as (10) 10. unit digit 2 of number x is vertically multiplied with unit digit -3 of number y to get partial product -6 (p1). the cross multiplication of the tenth digit 1 of number x with unit digit -3 of number y is added with the cross multiplication of unit digit 2 of number x with tenth digit -1 of number y to get partial product -5 (p2). similarly, the tenth digit 1 of number x is vertically multiplied with the tenth digit -1 of number y to get partial product -1(p3). the final product -156 (p) is the concatenation of -1 (p3), -5 (p2) and -6 (p1). 2.2. conventional 2’s complement signed binary number table 1 shows the signed multiplication of two binary numbers (12)10 and (-13)10 using the traditional 2’s complement multiplication method. here 12 is an unsigned number and 142 d. kumar, m. pradhan, n. k. misra, b. k. bhoi (-13) is a signed number, so 2’s complement of (-13) is (10011)2. so (12)10 = (0 1 1 0 0)2 and (-13)10 = (1 0 0 1 1)2 table 1 signed multiplication using conventional 2’s complement method multiplicand = 01100= (12)10 0 1 1 0 0 multiplier = 10011= (-13)10 1 0 0 1 1 partial product 1 0 0 0 0 0 0 0 1 1 0 0 partial product 2 0 0 0 0 0 0 1 1 0 0 partial product 3 0 0 0 0 0 0 0 0 0 partial product 4 partial product 5 0 1 0 1 0 1 0 1 0 0 0 1 0 0 0 0 multiplication result (-156)10 1 1 1 0 1 1 0 0 1 0 0 multiplication result of (12)10 x (-13)10 = (-156)10. we get the signed multiplication result by converting the signed number using 2’s complement method. the binary value of (12)10 is (1 1 0 0)2, as it is a signed multiplication, we can write it as (0 1100)2. the binary value of (13)10 is (1 1 0 1)2, for the signed number we have to take the 2’s complement of (1 1 0 1)2 which we can write as (-13)10 = (1 0011)2. here 0 and 1 are used as sign extensions for positive and negative signs respectively. after doing the multiplication we get the product as (-156)10 = (1 01100100)2. there are five partial products with sign extension for the negative partial product (pp5). the final product is the addition of five partial products. 2.3. the proposed signed multiplication using the ut algorithm in figure 1 also base is taken as (10000)2. the 8-bit multiplicand x is represented by the least significant 4-bit binary number b = (0010)2 and the most significant 4-bit binary number a = (0001)2. similarly, the 8-bit multiplier y is represented by the least significant 4-bit binary number d = (1101)2 and the most significant 4-bit binary number c = (1111)2. the least significant 4-bit binary number (0010)2 of number x is vertically multiplied with the least significant 4-bit binary number (1101)2 of number y to get the 8-bit partial product (11111010)2 (p1). however, the number of binary digits of p1 should be four as there are four zeroes in the base of the proposed algorithm. so p1 becomes (1010)2 considering 4-bit including sign bit. the cross multiplication of (0001)2 of number x with (1101)2 of number y is added with cross multiplication (0010)2 of number x with (1111)2 of number y to get the 8-bit partial product (11111011)2 (p2). as per the proposed algorithm, p2 also becomes (1011)2 considering 4-bit including sign bit. similarly, the most significant 4-bit binary number (0010)2 of number x is vertically multiplied with the most significant 4-bit binary number (1101)2 of number y to get the 8bit partial product (11111111)2 (p3). the final 16-bit product p is the concatenation of 8bit p3, 4-bit p2, and 4-bit p1. signed multiplication architecture using vedic urdhva tiryagbhyam algorithm... 143 example1: of the proposed signed multiplication using ut algorithm multiplicand x (8-bit binary) = ab: a (4-bit binary) = (0001)2 = (1)10 and b (4-bit binary) = (0010)2 = (2)10 multiplier y (8-bit binary) =cd: c (4-bit binary) = (1111)2 = (-1)10 and d (4-bit binary) = (1101)2 = (-3)10 product: p (16-bit binary) = (11111111 1011 1010)2 intermediate parts = p1 (4-bit binary) = (1010)2 = (-6)10 //right part of result p2 (4-bit binary) = (1011)2 = (-5)10 //middle part of result p3 (8-bit binary) = (11111111)2 = (-1)10 //left part of result 1. for the 4-bit signed binary urdhva tiryagbhyam algorithm, the base (x) is taken as (1000)2. 2. p1 (vertical signed multiplication) =b x d = (0010)2 × (1101)2 = (11111010)2 = (1010)2 //considering 4-bit including sign bit 3. p2 (crosswise signed multiplication and addition) = a x d + b x c = {(0001)2 × (1101)2 + {(0010)2 × (1111)2} = (11111101)2 + (11111110)2 = (11111011)2 = (1011)2 //considering 4-bit including sign bit 4. p3 (vertical signed multiplication) =a x c = (0010)2 × (1101)2 = (11111111)2 5. final product p= x×y = concatenation of p3, p2 and p1= (p3, p2, p1) = (11111111,1011,1010)2 3. the proposed architecture the proposed 8x8 signed binary multiplier architecture using the vedic ut algorithm is shown in figure 1. the proposed multiplier architecture is implemented using four numbers of 4x4 signed multiplier blocks (4x4 sm1, 4x4 sm2, 4x4 sm3 and 4x4 sm4) and one parallel adder block. the 4x4 sm block is implemented using the signed product of a 4-bit multiplicand with a 4-bit multiplier. the two 8-bit inputs of the proposed architecture are x (a [4:1] b [4:1]) and y (c [4:1] d [4:1]). the 16-bit output is p3[8:1] p2[4:1] p1[4:1]. the 8-bit multiplicand x is represented by the least significant 4-bit binary number b [4:1] and the most significant 4-bit binary number a [4:1]. similarly, the 8-bit multiplier y is represented by the least significant 4-bit binary number d [4:1] and the most significant 4-bit binary number c [4:1]. 144 d. kumar, m. pradhan, n. k. misra, b. k. bhoi fig. 1 proposed signed multiplication architecture using ut algorithm the least significant 4-bit binary number b [4:1] of number x is vertically multiplied with the least significant 4-bit binary number d [4:1] of number y using 4x4 sm1 to get 8-bit partial product z1 [8:1]. however, the number of binary digits of p1 should be four as there are four zeroes in the base of the proposed algorithm. so p1 [4:1] becomes z1 [4;1] considering the 4-bit result including the sign bit. the most significant 4-bits of z1 become carry inputs to the parallel adder. the cross-multiplication product z2 [8:1] between b [4:1] with c [4:1] is implemented using 4x4 sm2.similarly, cross multiplication product z3 [8:1] between a [4:1] with d [4:1] is realized using 4x4 sm3. further z2 [8:1], and z3 [8:1] are added using a parallel adder to get sum p2 [4:1]. as per the proposed algorithm, the least significant 4-bit sum becomes p2 [4:1] considering the 4-bit result including the sign bit. similarly, the most significant 4-bit binary number a [4:1] is vertically multiplied by the most significant 4-bit binary number c [4:1] using 4x4 sm4 to get an 8-bit partial product z4 [8:1]. z4 [8:1] is equal to p3 [8:1]. the final 16-bit product p is the concatenation of 8-bit p3, 4-bit p2, and 4-bit p1. similarly,16x16,32x32, and 64x64 signed binary multiplier architectures using the proposed design are implemented accordingly. 4. result and discussion the proposed architecture is coded using verilog hdl. the functionality of the design is verified using the vivado 2020.1 simulator tool. synthesis and implementation have been done using vivado 20.1 software tools for different virtex-7 and spartan-7 fpga devices for comparison. after the implementation area, power and delay are obtained from the utilization report, power report, and timing report respectively. fpga is an integrated circuit consisting of a configuration logic block, input-output block, and vertical and horizontal routing channels. signed multiplication architecture using vedic urdhva tiryagbhyam algorithm... 145 configuration logic blocks include lookup tables (luts), associated carry chains, multiplexers, and flip-flops.dsp slices in an fpga are specialized blocks designed to perform mathematical operations efficiently in filtering and digital signal processing applications. the proposed signed multiplier has been compared with the implementations reported in [9],[10] and [15]. table 2 shows the area, power, and delay comparison of the proposed signed multiplier in virtex-7 device vlx15sf363-12 with different state-of-the-art multipliers and square modules reported in [9], [10], and [15]. as shown in the table, our proposed signed multiplier provides higher speed performance than the state-of-the-art multiplier and square unit presented in [9], [10], and [15]. for example, our proposed 8x8 signed multiplier reduces critical path delay by 35%,13%,93%, and 81% as compared to the design presented in [9], [10] and [15] respectively. it can be observed from the table, except for 8x8 size, our proposed design requires a smaller number of luts than other state-of-the-art different bit size multipliers. for example, our 16x16 proposed implementation requires only 182 4-input luts whereas 294 4-input luts are required in vedic square unit presented in [9]. table 3 depicts the delay comparison of the proposed signed multiplier in spartan-7 device with different state-of-the-art multipliers reported in [10],[11], and [15]. as shown in the table, our proposed signed multiplier provides higher speed performance than state of the art multiplier presented in [10],[11], and [15]. for example, our proposed 16x16 signed multiplier reduces critical path delay by 59%,52%and 49% as compared to the design presented in [10],[11] and [15] respectively. figure 2 also presents the graphical representation of the critical path delay of our proposed design with other implementations in [10],[11] and [15]. it is the graphical representation of table 3. the differences in the bars of our design with other schemes show a clear indication of performance improvement. our signed multiplier outperforms other state-of-the-art designs in delay metric. table 2 area, power, and delay comparison for the proposed multiplier bit size performance parameter vedic squaring unit [9] booth multiplier [9] squaring circuit [10] signed vedic multiplier [15] vedic multiplier [21] proposed signed multiplier 8x8 4-input luts power, w delay, ns 35 14.256 - 186 15.718 - 49 8.948 - - 15.22 - 51 15.45 -- 0.25% 10.835 13.437 % improvement w.r.to power 23.99 31.06 ni 28.81 42.59 16x16 4-input luts power, w delay, ns 294 33.391 - 880 36.657 - 233 18.564 -- - 19.58 -- 240 18.45 - 1.25% 28.786 15.291 % improvement w.r.to power 13.79 21.47 ni ni ni 32x32 4-input luts power, w delay, ns 1034 68.125 -- 2760 74.432 -- 985 37.345 -- - 22.32 -- 842 21.56 -- 5% 62.024 17.909 % improvement w.r.to power 8.955 16.67 ni ni ni 146 d. kumar, m. pradhan, n. k. misra, b. k. bhoi table 3 delay comparison for the proposed multiplier in spartan-7 device 16x16 bit multiplier signed/ unsigned multiplier combinational delay (ns) percentage of improvement (%) array multiplier in [11] unsigned 43.946 65 booth multiplier in [11] signed 37.041 58 vedic multiplier in [10] unsigned 37.50 59 vedic multiplier using compressor adder in [11] unsigned 32 52 signed vedic multiplier in [15] signed 30.16 49 proposed signed multiplier signed 15.291 -- fig. 2 combinational delay chart fig. 3 simulation result for proposed 8x8 signed multiplier figure 3 shows the simulation results of the proposed 8x8 signed multiplier. the signed multiplication of 12 and -13 is -156 which verifies the correct functionality of the architecture. signed multiplication architecture using vedic urdhva tiryagbhyam algorithm... 147 fig. 4 hardware realization for proposed 8x8 signed multiplier the hardware realization for the proposed 8x8 signed multiplier is shown in figure 4. this rtl schematic is generated after the synthesis and implementation of the design. the architecture utilizes four 4x4 signed multipliers and one adder block. conventional 8x8 signed multiplier can process operands between -128 to +127, while the proposed 8x8 signed multi-plier can only process -88 to +77 because the representation range of 4-bit signed binary number is -8 to +7. further, the comparison of the proposed 8x8 signed multiplier is fair with the squaring operation both of [9] and [10] because squaring is nothing but the multiplication of the same operand. 5. conclusion the vedic ut algorithm has been used as a basis for designing signed multipliers for fpgabased systems with real hardware applications. we introduced a novel architecture for signed multiplication, representing a significant advance in vlsi design for high-end computational applications. we have targeted real hardware devices like virtex-7 and spartan-7 fpga devices to test post-layout parameters such as speed and delay for multiplier architectures. comparing the proposed architecture with existing ones offers valuable insight into its efficiency and effectiveness. according to the proposed design, it exhibits 59% speed improvements over previously reported architectures, which may enhance the performance of high-performance signed number computations in the future. high-performance computing is likely to benefit from further research in this area, especially in the area of integer number computation. references [1] b. parhami, computer arithmetic: algorithms and hardware designs, oxford university press, 2000. doi: 10.1093/acprof:oso/9780195125832.001.0001 [2] s. b. k. tirtha and v. s. agrawala, vedic mathematics, motilal banarsidass publishers, india, 1992. [3] h. thapliyal and h. r. arbania, "a time-area-power efficient multiplier and square architecture based on ancient indian vedic mathematics," in proceedings of the int. conf. on vlsi, las vegas, nevada, 148 d. kumar, m. pradhan, n. k. misra, b. k. bhoi 2004, pp. 434–439. [4] p. d. chidgupkar and m. j. karad, "the implementation of vedic algorithms in digital signal processing," global journal of engineering education, vol. 8, no. 2, pp. 153–158, 2004. [5] h. s. dhillon and a. mitra, "a reduced-bit multiplication algorithm for digital arithmetic," international journal of computational and mathematical sciences, vol. 2, no. 2, pp. 759–764, 2008. [6] m. ramalatha, k. d. dayalan, p. dharani, and s. deeban, "high-speed energy efficient alu design using vedic multiplication techniques," in proceedings of the int. conf. on advances in computational tools for engineering applications, zouk mosbeh, lebanon, 2009, pp. 600–603. [7] p. mehta and d. gawali, "conventional versus vedic mathematical method for hardware implementation of a multiplier," in proceedings of the int. conf. on advances in computing, control and telecommunication technologies, 2009, pp. 640–642. [8] r. pushpangadan, v. sukumaran, r. innocent, d. sasikumar, and v. sundar, "high-speed vedic multiplier for digital signal processors," iete journal of research, vol. 55, no. 6, pp. 282–286, 2009. [9] p. s. kasliwal, b. p. patil, and d. k. gautam, "performance evaluation of squaring operation by vedic mathematics," iete journal of research, vol. 57, no. sup1, pp. 39–41, 2011. [10] k. sethi and r. panda, "multiplier less high-speed squaring circuit for binary numbers," international journal of electronics, vol. 102, no. 3, pp. 433–443, 2015. [11] y. bansal and c. madhu, "a novel high-speed approach for 16 × 16 vedic multiplication with compressor adders," computers and electrical engineering, vol. 52, pp. 39–49, 2016. [12] m. pradhan and r. panda, "high-speed multiplier using nikhilam sutra algorithm of vedic mathematics," international journal of electronics, vol. 101, no. 3, pp. 300–307, 2014. [13] r. k. barik and m. pradhan, "area-time efficient square architecture," amse journal of advances in modeling and analysis d, vol. 20, no. 2, pp. 21–34, 2015. [14] r. k. barik and m. pradhan, "efficient asic and fpga implementation of cube architecture," iet computers & digital techniques, vol. 11, no. 1, pp. 43–49, 2017. [15] r. k. barik, m. pradhan, and r. panda, "time efficient signed vedic multiplier using redundant binary representation," iet journal of engineering, vol. 2017, no. 10, pp. 60–68, 2017. [16] s. sahu, b. bhoi, and m. pradhan, "fast signed multiplier using vedic nikhilam algorithm," iet circuits, devices & systems, vol. 14, no. 5, pp. 623–629, 2020. [17] s. k. panda, r. das, and t. r. sahoo, "vlsi implementation of vedic multiplier using urdhvatiryakbhyam sutra in vhdl environment," iosr journal of vlsi and signal processing, vol. 5, no. 5, pp. 17–24, 2015. [18] p. vamsi krishna, k. nirosha, g. amala, n. manikanta, and j. venkata suman, "design and implementation of fpga based 32-bit wallace and systolic multipliers," international journal of creative research thoughts, vol. 6, no. 1, pp. 162–166, 2018. [19] g. k. ganjikunta, s. i. khan, and m. mahaboob basha, "a high-performance signed-unsigned multiplier using vedic mathematics," journal of low power electronics, vol. 15, no. 3, pp. 302–308, 2019. [20] j. j. huang and s. v. lale, "a novel nano‐scale architecture of vedic multiplier using majority logic in quantum‐dot cellular automata technology," electronics letters, vol. 58, no. 17, pp. 660–662, 2022. [21] c. shylaja, a. rai, and p. k. mishra, "modelling and simulation of 16-bit vedic multiplication using fpga," journal of physics: conference series, vol. 2007, no. 1, p. 012003, 2021. facta universitatis series: electronics and energetics vol. 32, no 2, june 2019, pp. 231-238 https://doi.org/10.2298/fuee1902231l plug-and-play transceiver with high gain and ultra low noise figure for ieee 802.15.4 application josue lopez-leyva, miguel ponce-camacho, ariana talamantes-alvarez center for innovation and design, cetys university, microwave street, ensenada, mexico abstract. this paper shows the design and performance simulation of a 2.4 ghz plugand-play transceiver based on a high speed switch for ieee 802.15.4 applications. the electrical design was optimized taking into account the scattering parameters, inputoutput impedance matching and minimum trace width. the simulation results show an important performance regarding the noise figure (0.38 db) and gain (21 db) at particular temperature for reception mode, transmission scattering parameters (s12 and s21) and reflection scattering parameters (all the rest parameters) for both mode operation (power amplifier and low noise amplifier). key words: power amplifier, low noise amplifier, scattering parameters. 1. introduction nowadays, wireless communication systems are necessary to improve and expand the variety of services for the private, public and personal sectors [1,2]. in particular, the concepts of internet of things (iot) and machine-to-machine (m2m) impose a tendency towards the monitoring, control and data acquisition for different types of clients [3]. although there is a large number of wireless communication systems, these require improvements to some parameters, such as the extension of coverage (i.e. link distance) considering the trade-offs between energy consumption, the complexity of the electronic design, and the cost-effect. in order to improve these parameters, the power amplifier (pa) and the low noise amplifier (lna) are suitable technical options for full-duplex high-end telecomm systems; both have important features such a noise figure, gain, linearity, single / multiple narrow/wide bands and impedance matching [4,5]. however, designing and manufacturing these circuits with high performance for all parameters is a difficult task. resizing pa and lna is a trend but the gain-size trade-off is a highlight issue [6,7]. a lna+pa circuit with higher gain and lower noise figure (nf) is required received september 6, 2018; received in revised form november 14, 2018 corresponding author: josue lopez-leyva cetys university, center for innovation and design, mexico (e-mail: josue.lopez@cetys.mx) 232 j. lopez-leyva, m. ponce-camacho, a. talamantes-alvarez for wide coverage applications where plug-in-play transceiver systems are needed [8,9]. in terms of low data rate wireless personal area network technologies, ieee 802.15.4 is the most useful standard used due to the extended life of the device based on low power consumption [10,11]. wide coverage applications based on this protocol are a crucial issue that the presented novel and optimum transceiver can solve. we propose a reduced plug-and-play transceiver in comparison with the traditional transceiver. the principal objective of our proposal is to increase the distance of communication links without the digital processing performed in traditional transceiver. this paper is organized as follows: section 2 is dedicated to the general description of the electrical design. section 3 shows the simulation results regarding scattering parameters in both operation modes, noise figure and gain performance. section 4 concludes the paper and mentions the future work for the manufacture of the electrical board with industrial quality level. 2. electronic design fig. 1 shows the block diagram of the transceiver (pa+lna), and multisim software was used for simulation analysis. the general set-up presents the lna subsystem where the incoming signal is received by the antenna (sma connector) and fed to a high speed rf switch. the switch presents a high isolation based on a rlc circuit and two diode circuits, i.e. dual switching diode circuit (baw56lt1) and a high shunt signal isolator / low shunt insertion loss diode (bar81w) with a switching rate up to 2 ghz. in particular, the rf switch has a control port to commute between transmission and receiver mode. after the lna block, the electrical signal is fed to another rf switch to send the signal to the processing board. as for the signal path and the way of processing for the pa, it is the same as that of lna. in addition, two test points were established in order to measure the scattering parameters (s-parameters) [12] using a network analyzer (na) for different time slots (i.e., slot #1 for reception mode that relates port #2 as input and port #1 as output, while slot #2 for transmission mode that relates port #1 as input and port #2 as output). fig. 1 block diagram of transceiver. blue trace describes the lna-pa path and red trace describes the pa-lna path with the respective measurement points at slot 1 and 2. plug-and-play transceiver with high gain and ultra low noise figure for ieee 802.15.4 application 233 fig. 2a) shows the general electronic diagram for the high speed switch / rf isolator based on the diodes mentioned for transmission mode. a mode controller is used in order to switch modes using the connection points, c and d. in particular, the connection point c, enables or disables the pa circuit shown in fig. 2b, and connection point d controls the lna circuit shown in fig. 3b). while the connection points a and b are the input and output of the pa circuit. an input-matching-impedance-network (imn) and outputmatching-impedance-network (omn) were implemented in the input and output port of the pa, respectively, as fig. 2 shows. a) b) fig. 2 a) electronic diagram for high speed switch / rf isolator for transmission mode, b) electronic diagram of the pa. a) b) fig. 3 a) electronic diagram for high speed switch / rf isolator for reception mode, b) electronic diagram of lna. fig. 3a) shows the general electronic diagram for the high speed switch / rf isolator for reception mode. in general, the electronic diagrams shown in fig. 2a) and 3a) are similar, however, particular inductance and capacitance values are modified in order to optimize the imn and omn. in addition, the connection points, e and f, represent the input and output of the lna circuit. as mentioned, the pa circuit uses the bfp650 transistor, therefore, the first step of the design is to measure the current-voltage 234 j. lopez-leyva, m. ponce-camacho, a. talamantes-alvarez characteristics in order to choose and set the q-point (operating or quiescent point). fig. 4 shows the relation between the vce and ic for different ib, where the trace corresponding to ib = 6 ma was selected for vce = 3.3 v in order to establish proper operating conditions (q-point) based on the input data signal. the same procedure was performed to determine the q-point of the bfp843f used in the lna circuit and the same biasing voltage (vce) was chosen. fig. 4 analysis of the transistor bfp650. blue trace describes the vce-ic relation for different ib. red trace is the optimum steady state for q point. an important issue in the circuit design is the matching impedance with respect to the electronic element and the transmission line in the pcb. therefore, the characteristic impedance (z0) for the microstrip line can be calculated using some physical and electromagnetic parameters as eq. (1) shows [13]. 0 120 1.393 0.667ln 1.444 eff z w w h h            (1) where w is the width, h is the dielectric thickness and εeff is the effective dielectric constant. in particular, eq. (1) is only suitable for microstrip satisfying the relation (w/h > 1). however, to optimize this matching, a transmission line calculator was used where the transmission line type, length and dielectric material characteristics were selected to produce a z0 ≈ 50 ω and a minimum capacitance and inductance (see fig. 5). due to the high power demand of the circuit, a trace width analysis was performed in order to calculate the minimum trace width based on the root mean square (rms) electric current in each electrical path. fig. 6 shows the printed circuit board (pcb) layout based on the aforementioned parameters and fig. 7 shows the three-dimensional view of the pcb. the ultiboard software was used for the pcb designs. plug-and-play transceiver with high gain and ultra low noise figure for ieee 802.15.4 application 235 fig. 5 transmission line calculator in order to determine the characteristic impedance based on particular physical features of dielectric material and microstrip. by using the matching circuits imn and omn shown in fig. 2 and 3, the input and output impedances of the pa and lna are obtained as follows: for pa, zin = 50.1 ω and zout = 49.48 ω, while for lna circuit, zin = 49.3 ω and zout = 45.05 ω. the good impedance matching was performed using l-section networks (i.e. using an inductor and a capacitor), however, the bandwidth and gain are an important trade-off considered in the complete design. fig. 6 pcb layout using c0402 packaging in each electronic element. fig. 7 3d view of printed circuit board layout. 236 j. lopez-leyva, m. ponce-camacho, a. talamantes-alvarez 3. simulation results fig. 8 shows the simulation results of the s-parameters for the reception mode. the s12 value means that there is a high transmission power ratio (≈ 21 db) of the complete circuit (lna+pa+ high speed rf switch), while the s22 value (≈ -19 db) and the s11 value (≈ 21 db) means a good matching performances achieved in the input and output ports, respectively, in the reception operation mode. the s21 (≈ -27 db) has an adequate electrical performance of isolation between input and output ports. fig. 8 performance of the pa-lna scheme in the reception mode (port #2 is the input and port #1 is the output). fig. 9 performance of the pa-lna scheme in the transmission mode (port #1 is the input and port #2 is the output) plug-and-play transceiver with high gain and ultra low noise figure for ieee 802.15.4 application 237 with respect to the measurements of the s-parameters in the transmission mode (see fig. 9), s21 and s12 are the most important because they describe the transmitted and the reflected level signal (≈ 18 db and ≈ -19 db, respectively). in addition, fig. 10 shows the performance of nf and gain (g) depending on the temperature variation at 2.4 ghz. the nf measurement is ≈ 0.6 db and gain is ≈ 21 db for 27 °c. fig. 10 nf and gain of the pa-lna scheme in transmission mode (slot #1) at 2.4 ghz with temperature variations. in addition, nf and g parameters were measured at 18.8 °c (i.e. 292 °k, temperature standard). in this case, nf is ≈ 0.38 db and g is ≈ 21.5 db. 4. conclusion this paper presented a transceiver circuit that has good performance parameters considering s-parameters, noise figure and gain based on the detailed design for imn and omn. the plug-and-play feature imposes an easy way to extend the coverage of different traditional wireless systems based on the ieee 802.15.4 standard. it is important to clarify that the principal objective of the proposal is to increase the distance of the communication link of systems based on ieee 802.15.4. therefore, although conventional and commercial transceivers perform other processes (e.g. digital-to-analog converter, frequency synthesizer, among others), our proposal only focuses on improving the transmission and reception mode without considering modulation, synchronization, coding, encryption among others schemes. in particular, the analysis for the pcb design is based on microstrip transmission lines, although a ground layer is added in order to improve the performance. due to the above, it is possible to confuse the transmission lines shown in fig. 7 as a conventional coplanar waveguide (cpw). in fact, the impedance analysis is not performed considering a cpw. currently, we have a first prototype that uses fr4 dielectric material in order to perform some accelerated life testing (alt) and technical operating production (top). in addition, the transceiver circuit has been manufactured using a flexible dielectric material and other types of transmission lines in order to enhance the electronic performance. 238 j. lopez-leyva, m. ponce-camacho, a. talamantes-alvarez acknowledgement: this work was supported by the grant of center for innovation and design (ceid), cetys university as an internal scientific and technical project. in addition, this article was prepared within the frame of industrial-academic relationship of the ceid. in particular, thanks to the english native speaker colleagues that supported this document. references [1] j. g. d. hester, j. kimionis and m.m. tentzeris, “printed motes for iot wireless networks: state of the art, challenges, and outlooks”. trans. microwave theory and techniques, vol. 65, pp. 1819–1830, may 2017. [2] g. zheng, c. hua, r. zheng and q. wang, “toward robust relay placement in 60 ghz mmwave wireless personal area networks with directional antenna”, trans. mobile computing, vol. 15, pp. 762–773, march 2016. [3] j.w. raymond, t.o. olwal and a.m. kurien, “cooperative communications in machine to machine (m2m): solutions, challenges and future work”. access, vol. 6, pp. 9750–9766, february 2018. [4] j-e. baek, y.m cho and k-c. ko, “analysis of design parameters reducing the damage rate of lownoise amplifiers affected by high-power electromagnetic pulses”, trans. plasma science, vol. 46, pp. 524–529, march 2018. [5] h. laaouane, j. foshi and s. bri, “design of a low noise amplifier for lte radio base station receivers. in: international conference on wireless technologies”, in proceedings of the international conference on wireless technologies, embedded and intelligent systems (wits). morocco, ieee, 2017, pp. 1–5. [6] w-l. ou, y-k. tsai, p-y. tsengand and l-h. lu, “a 2.4-ghz dual-mode resizing power amplifier with a constant conductance output matching”. in proceedings of the international system-on-chip conference. munich, ieee, 2017, pp. 258–261. [7] p. qin and q. xue, “compact wideband lna with gain and input matching bandwidth extensions by transformer”, microwave and wireless components letters, vol. 27, pp. 657–659, july 2017. [8] j. p. carmo, n. dias, p. m. mendes, c. couto and j. h. correia, “low-power 2.4-ghz rf transceiver for wireless eeg module plug-and-play”. in proceedings of the international conference on electronics, circuits and systems, nice, ieee, 2006, pp. 1144–1147. [9] w-t. fang and y-s. lin, “highly integrated switched beamformer module for 2.4-ghz wireless transceiver application”, trans. microwave theory and techniques, vol. 64, pp. 2933–2942, sept. 2016. [10] h-j. jeon, t. demeechai, w-g. lee, d-h. kim and t-g. chang, “ieee 802.15.4 bpsk receiver architecture based on a new efficient detection scheme”, trans. signal processing, vol. 58, pp. 4711 – 4719, sept 2010. [11] a. zolfaghari, m-e. said, m. youssef, g. zhang, t-t. liu, f. cattivelli, y-i. syllaios, f. khan, f-q. fang, j. wang, k-y. jason-li, fh. liao, d-s. jin, v. roussel, d-u. lee and f-m. hameed, “a multimode wpan (bluetooth, ble, ieee 802.15.4) soc for low-power and iot applications”, in proceedings of the symposium on vlsi circuits, kyoto, ieee, 2017, pp. c74–c75. [12] b. lehmeyer, m.t. ivrlač and j.a. nossek, “lna noise parameter measurement”, in proceedings of the european conference on circuit theory and design, trondheim, ieee, 2015 pp. 1–4. [13] j.w.n. rogers and c. plett, “radio frequency integrated circuit design”. norwood: artech house, 2010, chapters 4, pp. 63–93. instruction facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 77 88 doi: 10.2298/fuee1601077s gold nanostructures sputtered on zinc oxide thin film and corning glass substrates  * ondrej szabó 1 , soňa flickyngerová 1 , teodora ignat 2,3 , ivan novotný 1 , vladimír tvarožek 1 1 institute of electronics and photonics, faculty of electrical engineering and information technology, slovak university of technology, bratislava, slovakia 2 institute of analytical chemistry, faculty of chemical and food technology, slovak university of technology, bratislava, slovakia 3 laboratory of nanobiotechnology, imt-bucharest, bucharest, romania abstract. forming of au nanostructures on corning glass substrates and transparent conductive oxide zno:al thin films by the rf diode sequential sputtering is presented. the morphology of au structures was analysed by scanning electron microscopy (sem) with the free imagej software, the optical properties were evaluated by uv-vis spectrometry and micro-raman spectroscopy. the sputtering power density (deposition rate) and nominal au thickness caused changes in the sizes (10 – 1000 nm2) and nearest neighbour nn distances (4 – 40 nm) of au nanostructures. the morphology of nanostructures exhibited the lognormal distribution of the size of nanostructures. the lowest sputtering power density/deposition rate (9 mw/mm2/0.12 nm s–1) was optimal to get both the high optical transparency and a superior activity surface-enhanced raman scattering of 11-mercaptoundecanoic acid adsorbed on the au/zno:al film. key words: sputtering, zno:al thin films, au nanostructures, plasmon absorption, surface-enhanced raman scattering 1. introduction developing the approaches for obtaining nanostructures consisting of noble metals with complete control over the shape of surface structures remains a major challenge. in fact, the real objective is to produce small objects with reproducibly matching the requirements of the specific applications in photonics, biosensors, electronics, nanofluidics and other emerging fields. at „nano‟ level a variety of interesting optical and plasmonic received september 16, 2014; received in revised form august 27, 2015 corresponding author: ondrej szabó institute of electronics and photonics, faculty of electrical engineering and information technology, slovak university of technology, ilkovičova 3, sk-812 19 bratislava, slovakia (e-mail: ondrej.szabo@stuba.sk) *an earlier version of this manuscript received the best oral paper award at the 29th international conference on microelectronics (miel 2014), belgrade, 12-15 may, 2014 [1].  78 o. szabó, s. flickyngerová, t. ignat, i. novotný, v. tvarožek effects occur. creating „hot spots‟ which typically reside in interstitial voids of metal nanoparticles and metal structures with intersections, bifurcations and high radius of curvatures gives rise to peaks in the light absorption spectra of the materials and are believed to be primarily responsible for the huge amplifications seen in single molecule sers (surface enhanced raman spectroscopy). to construct a sers active substrate, a variety of architectures have been developed [2, 3]. most of the published papers present sers substrates constructed from metal aggregates, such as au and ag layers with different shapes and sizes, dependent of the raman wavelength [4]. it is important to notice that a sers active nanostructure can act as a reporter for biological assays in the same manner as fluorescent or radioactive reporters with mentioned advantages. sers is a fascinating process by which normally weak raman signals can be amplified by many orders of magnitude. among nanostructured noble metals, gold (au) has a special importance because of its stability and unique electrochemical and optical properties. gold nanostructures are often prepared by two approaches: (i) „top-down‟ approach in which bulk materials are made into micro/nano structures with the help of downscaling techniques (lithographic techniques) and (ii) „bottom-up‟ approach, where small building blocks are assembled into bigger structures (like electrochemical deposition, sputtered micro-/nanostructures) [5, 6, 7, 8]. therefore, a lot of effort has been dedicated to gold nanostructures, mainly due to their exciting applications as substrates for sers [9], catalysis [10], biomolecular and dna sensors [11], super-hydrophobicity/hydrophilicity substrates [12], selective solar absorbers, antireflection coatings or diffraction gratings [13]. zinc oxide (zno) is an n-type semiconductor with a wide band gap (3.3 ev at 300 k) used as a promising candidate to replace other wide band gap semiconductors, such as indium tin oxide (ito) [14]. this material is used as a transparent electrode in optoelectronic devices. it has been found that the conductivity of zno films increases when doped with aluminium, fig. 1a. zno doped by al (zno:al) used as transparent conduction oxide (tco) films have attracted attention due to their nontoxic nature, costeffectiveness and easy fabrication. however, a sensor based on zno:al still has some limitations. sensor sensitivity can be improved by several techniques, such as preparing the sensor material in a nanostructure or adding a noble metal. definitely, it is still needed to create hybrid nanostructures by combining two or more constituents due to their unique composition-dependent properties that are very hard to reach by just one material [6]. the purpose of our study was to develop and optimize technology which results in the formation of au nanostructures on tco zno:al thin film/corning glass substrates by rf diode sputtering. the obtained structure was characterized by scanning electron microscopy (sem) and by optical spectrometry in order to have a deep and complete view of the developed nanostructured substrates. the study is divided into different directions focused on creating and characterizing the au nanostructures/zno:al thin films: (i) zno:al thin films characterization their crystalline structure, electrical properties and their electrochemical response by the cyclic voltammetry; (ii) the influence of the rf diode sputtering power on the morphology of ultra-thin gold layers deposited on the zno:al thin film and corning glass substrates; (iii) surface plasmon absorption of au/corning glass and au/zno:al substrates; (iv) the sers response of the au/zno:al substrate functionalized with 11-mercaptoundecanoic acid (11-mua) [15]. gold nanostructures sputtered on zinc oxide thin film and corning glass substrates 79 2. experimental the rf diode sputtering system perkin/elmer 2400/8l for deposition of both zno:al thin films and au nanostructures was used. continuous sputtering zno:al thin film was performed by the standard static mode of deposition (the substrates were placed under the target) using a ceramic target (zno+2 wt. % of al2o3) in ar working gas. post-deposition annealing of zno:al thin films with a thickness of 560 nm was conducted at 500 ºc for 30 min in the forming gas n2:h2 (90:10). their crystallographic orientation was analysed by x-ray diffractometer x‟pert pro with a bragg-brentano goniometer equipped with an ultra-fast linear semiconductor detector pixcel and copper k radiation source (λ = 0.154 nm). electrical properties of zno:al thin films were estimated by hall measurements. deposition of au was performed by the sequential (dynamic) mode of sputtering [16]: au target of 102.4 mm in diameter, ar pressure of 1.3 pa. the substrates were in motion under the target by turning the substrate holder. the deposition time corresponding to one turn was approx. 9 seconds. corning glass substrates (bare or covered by tco zno:al thin film) were heated to a temperature of 200 °c before au deposition. the influence of rf power on the morphology of au nanostructures was examined. the sputtering rates were determined from the thicknesses and time of deposition of homogeneous thin films, which were evaluated by a dektak profilometer. the amount of sequentially sputtered material was estimated by the nominal thickness of the film deposited during one-turn period (≈ 9 s) under the target. the sputtering rates of au depended on the rf power density and they were 0.12 nm/s (9 mw/mm 2 ), 0.25 nm/s (18 mw/mm 2 ), 0.5 nm/s (36 mw/mm 2 ) and 1.0 nm/s (72 mw/mm 2 ). after deposition of gold on zno:al/corning glass substrate, the samples were subsequently transferred to 11-mercaptoundecanoic acid 2 µmol/ml solution for 24 h, this molecule being well known for its ability to bond on gold surfaces. in order to remove the physically absorbed 11-mua molecule, all samples were rinsed with ethanol and water and dried in nitrogen. all chemicals were used as received without further purification. the morphology of au structures was characterized by scanning electron microscopy (sem) jeol 7500f, their optical transparency was measured by ava spec 2048 fiber optic spectrometer. micro raman spectra of the samples were obtained using a spectroscopy&imaging monovista uv-vis-nir confocal raman microscope using a visible 514 nm laser. it can calculate the area and the nearest neighbour (nn) distance of objects specified in pixels, pixel value statistics of user-defined selections and creates density histograms and line profile plots. it supports standard image processing functions, such as contrast manipulation, sharpening, smoothing, edge detection and median filtering. the size (area) of nanostructures (islands) is characterized by the area of selection in square pixels. original sem images (size of 1280×1024 pixels) were cropped for evaluation to a size of 640×512 pixels. 3. results and discussion for evaluation of surface morphologies we used sem and the image processing program imagej which is an open source program [17]. examples of sem image processing are given in figs. 1, 2, 3, 4. statistical analysis of sem images showed the poisson (lognormal) distribution of the size of surface grains and nanostructures, and their nn distances exhibited a gaussian distribution. the modus is the value that appears most often in a set of data (fig. 4). 80 o. szabó, s. flickyngerová, t. ignat, i. novotný, v. tvarožek the growth of nanostructures, i.e., also their morphology, was influenced by the type of substrate: polycrystalline textured zno:al thin film on corning glass or amorphous corning glass. the 560 nm thick zno:al film was polycrystalline with preferred (002) orientation [18]. the structural columnar hierarchy of the continuous sputtered zno:al film is shown in fig. 1b. crystalline structures of the film were corresponding to zone 2 of the crystalline structure of our zone representation [19]. continuous sputtering generally led to the growth of bigger columnar grains in comparison with sequential sputtering. this effect was particularly caused by selfheating of the growing film during sputtering and by an increase of the deposition time (larger thickness). it showed the evolution of column-shaped structures during the growth (the socalled v-shape growth), fig. 1c. a similar grain hierarchy was observed in both experimental results and theoretical simulations [20]. the size of columnar grains oriented perpendicularly to the substrate was increased in the direction to surface, top areas of the grains in the surface plane were characterized by lognormal distribution with modus 1050 nm 2 and the modus of nn grain distances was 65 nm (fig. 1d). crystalline columnar structure of azo film had an influence on their electrical properties obtained by hall measurements. relatively high resistivity (1×10 -2 ω cm) was caused by low electron mobility (2.5 cm 2 /vs) at electron concentration 2×10 20 cm –3 . if one supposes the electron grain-boundary scattering, the calculated value of the electron mean free path [20] is 30 nm. the ionized impurity scattering is getting dominant in the range of electron concentrations greater than 10 20 cm –3 according to behaviours of degenerate semiconductors [21]. a) b) c) 0 5000 10000 15000 0.00 0.05 0.10 0.15 0.20 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 p ro b a b il it y d en si ty ( n m -1 ) nn distance (nm) p ro b a b il it y d en si ty ( n m -2 ) area (nm 2 ) d) fig. 1 schematic representation of the wurtzite zno structure doped by al (azo) (a), surface sem images and cross-section (b), (c) and sem image processed results (histograms) (d) of continuous sputtered zno:al thin films. 100 nm 1 µm gold nanostructures sputtered on zinc oxide thin film and corning glass substrates 81 in comparison with continuous sputtering, the sequential mode of sputtering allows to achieve very low deposition rates, higher homogeneity and well-controllable 3dimensional coverages [15]. for the growth of au nanostructures the early stages of thin film growth are important: nuclei formation, growth of clusters and islands and their coalescence [22]. sem images of au nanostructures sputtered on corning glass are in fig. 2. the power density was changed from 18 mw/mm 2 to 72 mw/mm 2 . this resulted in increasing the modus of nanostructure (island) areas from 50 nm 2 to 600 nm 2 (fig. 4). simultaneously, the modus of the nearest neighbour distances of islands increased from 11 nm to 34 nm. a) b) c) d) e) f) fig. 2 sem images of au nanostructures sputtered on corning glass substrate at different ratios power density/deposition rate/nominal thickness: a) 18 mw/mm 2 / 0.25 nm s –1 / 2.2 nm, c) 36 mw/mm 2 / 0.5 nm s –1 / 4.5 nm, e) 72 mw/mm 2 / 1 nm s –1 / 9 nm. b), d), f) corresponding size and nn distance distribution of au nanostructures. 82 o. szabó, s. flickyngerová, t. ignat, i. novotný, v. tvarožek a) b) c) d) e) f) fig. 3 sem images of au nanostructures sputtered on zno:al thin film / corning glass substrate at different ratios power density / deposition rate / nominal thickness: a) 9 mw/mm 2 / 0.12 nm s –1 / 1.1 nm, c) 18 mw/mm 2 / 0.25 nm s –1 / 2.2 nm, e) 72 mw/mm 2 / 1 nm s –1 / 9 nm. b), d), f) corresponding size and nn distance distribution of au nanostructures. gold nanostructures sputtered on zinc oxide thin film and corning glass substrates 83 the orphology of au nanostructures formed on zno:al thin film was affected by the power density from 9 mw/mm 2 to 72 mw/mm 2 as well as by the polycrystalline texture nature of the film surface (fig. 3). the modus of au nanostructure areas on zno:al thin film increased from 5 nm 2 to 20 nm 2 and the modus of nn distance distribution was changed from 4 nm to 9 nm (fig. 4). 20 40 60 80 0 200 400 600 800 area nn distance rf power density (mw/mm 2 ) m o d u s o f a re a ( n m 2 ) 0 10 20 30 40 m o d u s o f n n d ista n ce (n m ) a) 5 10 15 20 25 0 5 10 15 20 25 area nn distance rf power density (mw/mm 2 ) m o d u s o f a r e a ( n m 2 ) 0 2 4 6 8 10 m o d u s o f n n d ista c n c e (n m ) b) fig. 4 modus of au nanostructure areas and nn distance distribution sputtered on corning glass / zno:al thin film. characteristic features of the morphology of rf diode sputtered au nanostructures as well as another behaviour of them are comparable with the results obtained by dc diode sputtering [6, 23]. spectral optical transmittances of an uncoated zno:al / corning glass substrate covered by au at different power densities are shown in fig. 5. the range of power densities corresponded to the nominal thickness interval 1.1 ≤ dau ≤ 9 nm. transmittance of zno:al film / corning glass substrate (~ 90 %) decreased down to ~ 50 % with an increase of sputtering power densities (i.e., also with au nanostructure sizes). the minimum in optical transmittance curves corresponds to surface plasmon absorption [23] caused by collective oscillation of electrons on the surfaces covered by au nanostructures (fig. 5a, b). sputtering power densities had an influence on the surface plasmon absorption wavelengths which varied in the range from 572 nm to 626 nm (corresponding plasmon resonant frequencies were 524 thz to 479 thz). surface plasmon absorption peaks are characteristic for au nanostructures. this is in agreement with au nanoparticles prepared by dc sputtering technologies [24]. the change of the shape of the plasmon absorption curves and the shift of plasmon resonant frequencies with the sputtering power were caused by the different sizes of au nanostructures and their various separations [23]. the red-shift of the absorption minimum with an increase of nominal thicknesses from 1.1 nm up to 9 nm (fig. 5 a) was not too strong, as reported in [3]. the use of thin film zno:al under au nanostructures suppressed the surface plasmon resonance (fig. 5 b) because the higher roughness of the zno:al surface (in comparison with a glass surface) influenced this effect. 84 o. szabó, s. flickyngerová, t. ignat, i. novotný, v. tvarožek a) 400 600 800 1000 0 20 40 60 80 100 t ra n sm it ta n ce ( % ) (nm) zno:al 9 mw/mm 2 18 mw/mm 2 72 mw/mm 2 b) fig. 5 spectral transmittance of au nanostructures sputtered at different power densities: a) on corning glass substrate, b) on zno:al thin film / corning glass substrate. zno thin films and nanostructures have several unique advantages (such as high surface area, nontoxicity, good biocompatibility and high electron communication features) for the development of electrochemical biosensors [25, 26]. zinc oxide exhibits a large isochemical point (ise ≈ 9.5), thus electrostatic attachment of bio-substances (e.g. proteins) with low ise („negative charged‟) is very easy [27]. it is very important to note that zno thin films are relatively stable around a neutral ph 7 and this gives zno-based sensors much more biocompatibility in biological fluids and species [28], since most of the biological fluids are around ph of 7 (e.g., blood has ph 7.4 [29]) therefore in electrochemical experiments we used a 0.1 m kcl solution whose properties are partly similar to blood. preliminary electrochemical behaviour of zno:al was controlled by cyclic voltammetry (fig. 6). cyclic voltammetry of zno:al thin film chips was performed using a ag/agcl reference electrode at a scan rate of 100 mv/s. two current peaks at –1200 mv and –1600 mv correspond to redox reactions on the zno:al electrode [22]. a relative wide potential window with allow detecting a number of bio/ inorganic species including heavy metals [30]. -2.0 -1.5 -1.0 -0.5 0.0 -50 -40 -30 -20 -10 0 10 -2 -1 0 1 2 3 -20 -10 0 10 20 j (  a /m m 2 ) voltage (v) potential window zno:al 560nm continual 0.1m kcl j ( m a /m m 2 ) voltage (v) fig. 6 cyclic voltammogram of zno:al film of thickness 560 nm. gold nanostructures sputtered on zinc oxide thin film and corning glass substrates 85 self-assembly of monolayers of 11-mercaptoundecanoic acid [30] on surfaces of gold nanostructures sputtered on zno:al thin film has been investigated by surface enhanced raman spectroscopy. the measured vibration bands of 11-mua using raman microscopy and their mode assignments can be attributed to bands which give information about the adsorption of 11-mua on gold, surface (c-s) gauche at 652 cm –1 , (c-s) trans at 700 cm – 1 , (c-c) at 1058 cm –1 , s (coo-au) at 1394 cm –1 . both apparent assignments of (c-s)t and (c-c) give information about the conformational state of the adsorbed molecule on the gold surface, showing the trans nature of the adsorbed molecule. moreover, it was observed that the peak intensity of adsorbed 11-mua on au nanostructures, when exposed to 9 mw/mm 2 power density, is significantly superior to other exposed substrates (fig. 7). it is known that the raman signal strength is proportional to the power of the raman laser exciting the sample. in our case a decrease in the intensity of major raman peaks was observed even when the laser power was increasing. this can be explained by damaging the sample with increasing the laser power. further, it was observed that the substrate without au nanostructures did not have the specific raman bands of the organic molecule. impressive enhancements are obtained when an organic molecule is adsorbed on a nanostructured substrate like au, ag, pt [24, 31, 32, 33, 34]. fig. 7 sers spectra of 11-mua on au nanostructures (ns) / zno:al thin film at different au sputtering power densities. 4. conclusion crystalline textured and columnar structure of zno:al film influenced their electrical properties but the acquired resistivity (1×10 –2 ω cm) was sufficient to perform the cyclic voltammetry measurements. preliminary results of electrochemical properties of sputtered zno:al thin films having the columnar crystalline structure, particularly nanotextured one, have confirmed their potential for the future application in biochemical sensors [35]. presented results have confirmed the ability of rf diode sputtering to prepare gold nanostructures of variable morphologies by changing the rf power density. sequential 86 o. szabó, s. flickyngerová, t. ignat, i. novotný, v. tvarožek mode of sputtering seems to be a well-controllable and precise technology with low deposition rate in the range from 0.1 to 1 nm s –1 . the crystalline structure of sequentially sputtered films became generally less-dense containing voids, gas interstitials and vacancies. this porous structure is caused by the interrupted type of sequential deposition. it allows easier formation and reshaping of nanostructures by post-deposition annealing [36]. the outputs of our research have verified the possibility of au surface plasmon forming by sequential sputtering without using masks and lithography. an apparent shift of the plasmon absorption minimum to longer wavelengths was observed. it was caused by an increase of the nominal thicknesses from 1.1 nm up to 9 nm. sputtering of gold on zno:al thin film substrate is a very simple and low cost technique for generating different gold morphologies and nanostructures. our substrate was based on zno because its high refractive index promotes strong light confinement, hereby increasing the sers effect [24]. in addition, the lack of toxicity and high chemical stability of zno make it a prospective material in biomolecule detection application. by varying the experimental conditions (rf power of deposition), the surface with nanostructures has been modified with 11-mercaptoundecanoic acid molecule and observed as a fingerprint of the molecule by raman spectroscopy. the organic molecules deposited on sputtered gold at rf power density 9 mw/mm 2 have better features than the other prepared substrates. the first results are interesting and show an encouraging, easy way to obtain an analytical tool for molecule raman detection. the research of au nanostructures sputtered on both glass and columnar tco zno:al thin films is going on because its outputs are applicable in biochemical sensors. acknowledgement: the presented work was supported by the sk vega project 1/0459/12 and by the competence center for smart technologies for electronics and informatics systems and services, itms 26240220072, funded by the r&d op programme erdf sr. this work was supported also by the scientific grant agency vega of the slovak republic (project no 1/0361/14) and the national scholarship programme of the slovak republic (dr. teodora ignat). we thank dr. j. kováč jr. for raman measurements and dr. p. šutta for xrd analyses. references [1] o. szabo, s. flickyngerova, v. tvarozek, and i. novotny, “sputtered gold nanostructures”, in proceedings of the international conference on microelectronics (miel 2014), belgrade, 12-15 may, 2014, pp. 245-248. [2] s. bhavya, r. r. frontiera, a. i. henry, e. ringe, r. p. van duyne, “sers: materials, applications, and future”, materials today, 2012, 15, pp. 16-25. [3] s. mahajan, t. hutter, u. steiner and p. g. oppenheimer, "tunable microstructured surface-enhanced raman scattering substrates via electrohydrodynamic lithography", j. phys. chem. lett. 2013 (4), pp. 4153 4159. [4] h. w. cheng, s. y. huan, r. q. yu, “nanoparticles-based substrates for surface-enhanced raman scattering of bacterial spores”, analyst, 2012, 137, pp. 3601-3608. [5] j. elias, m. gizowska, p. brodard, r. widmer, y. dehazan, t. graule, j. michler and l. philippe, “electrodeposition of gold thin films with controlled morphologies and their applications in electrocatalysis and sers”, nanotechnology, 2012, vol. 23, 255705. [6] j. siegel, o. lyutakov, v. rybka, z. kolska, v. svorcik, “properties of gold nanostructures sputtered on glass”, nanoscale research letters 2011, 6:96, 9 p. gold nanostructures sputtered on zinc oxide thin film and corning glass substrates 87 [7] r. alvarez, j. m. garcía-martín, m. macías-montero, l. gonzalez-garcia, j. c. gonzález, v. rico, j. perlich, j. cotrino, a r gonzález-elipe1 and a. palmero, “growth regimes of porous gold thin films deposited by magnetron sputtering at oblique incidence : from compact to columnar microstructures”, nanotechnology, 2013, vol. 24, 045604, 9 p. [8] p. lansaker, “gold-based nanoparticles and thin films: application to green nanotechnology”, dissertation, , acta universitatis upsaliensis, uppsala, isbn 978-91-554-8420-0, 2012, 100 p. [9] k. kneipp, y. wang, h. kneipp, l. t. perelman, i. itzkan, r. r. dasari, and m. s. feld, “single molecule detection using surface-enhanced raman scattering (sers)“, phys. rev., 1997, lett. 78, pp 1667. [10] t. fujita, p. guan, k. mckenna, x. lang, a. hirata, l. zhang, tt tokunaga, s. arai, y. yamamoto, n. tanaka, y. ishikawa, n. asao, y. yamamoto, j. erlebacher and m. chen, “atomic origins of the high catalytic activity of nanoporous gold“, nature mater, 2012, 11, pp. 775-780. [11] j. h. kim, t. kang, s. m. yoo, s. y. lee, b. kim and y.-k. choi, “a well-ordered flower-like gold nanostructure for integrated sensors via surface-enhanced raman scattering”, nanotechnology, 2009, 20, 235302 (6pp). [12] x. yu, z. q. wang, y. g. jiang, f. shiand x. zhang, “reversible ph-responsive surface: from superhydrophobicity to superhydrophilicity“, adv.mater, 2005, 17, pp. 1289-1293 [13] a. s. dimitrov, k. nagayama, “continuous convective assembling of fine particles into twodimensional arrays on solid surfaces“, langmuir, 1996, 12, pp. 1303-1311. [14] c. f. klingshirn, a. waag, a. hoffmann, j. geurts, zinc oxide from fundamental properties towards novel applications, springer, 2010. [15] l. sun, d. zhao, m. ding, h. zhao, z. zhang, b. li, d. shen, “a white-emitting zno-au nanocomposite and its sers applicant”, applied surface science, 2012, 258, pp. 7813-7819. [16] i. novotny, v. tvarozek, p. suta, m. netrvalova, j. novak, i. vavra, p. elias, “preparation of shell nanocrystalline ga-doped zno ultra-thin films by sputtering”, in proceedings of 28th int. conf. on microelectronics, nis, serbia and montenegro, 2012. [17] imagej website: http://imagej.nih.gov/ij/, (2013). [18] v. tvarozek, p. suta, s. flickyngerova, i. novotny, p. gaspierik, m. netrvalova, e. vavrinsky, “preparation of transparent conductive azo thin films for solar cells”, semiconductor technologies, chapter 12, (2010), pp. 271-294. [19] v. tvarozek, i. novotny, p. sutta, s. flickyngerova, k. shtereva, e. vavrinsky, “influence of sputtering parameters on crystalline structure of zno thin films”, thin solid films 515 (2007), pp. 8756-8760. [20] y.d. fan, x. p. li, j. yang, j. p. li, “microscopic model for columnar growth of thin films”, phys. stat. sol. (a), 134 (1992), pp. 157-166. [21] j. g. lu, z. z. ye, y. j. zeng, l. p. zhu, l. wang, j. yuan, b. h. zhao and q. l. liang, “structural, optical, and electrical properties of (zn, al)o films over a wide range of compositions”, j. of appl. physics 100, (7), 2006, 073714. [22] r. renuka, i. skrivinasan, s. ramamurthy, a. veluchamy, n. venkatakrishnan, „cyclic voltammetry study of zinc oxide elektrodes in 5.3 m koh“, journal of applied electrochemistry 31, 2001, pp. 655-661. [23] j. siegel, o. kvitek, o. lyutakov, a. reznickova, v. svorcik, „low pressure annealing of gold nanostructures“, vacuum, vol. 98, pp. 100–105. [24] t. ignat, m. a. husanub, r. munozc, m. kuskoa, m. danilaa, c. m. teodorescub, “gold nano-island arrays on silicon as sers active substrate for organic molecule detection”, thin solid films, 2014, 550, pp. 354-360. [25] p. singh, sunil k. arya, p. pandey, b. d. malhotra, "cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film”, appl. phys. lett. 91 (2007) 063901. [26] x. you, j. h. pikul, w. p. king, j. j. pak, “zinc oxide inverse opal enzymatic biosensor”, applied physics letters 102, 253103, 2013, doi. 10.1063/1.4811411 s. [27] e. topoglidis, a. e. g. cass, b. o` regan, j. r. durrant, “immobilization and bioelectrochemistry of proteins on nanoporous tio2 and zno films”, journal of electroanalytical chemistry 517 (2001), pp. 20-27. [28] j. zhou, n. xu and z. l. wang, “disolving behavior and stability of zno wires in biofluids: a study on biodegradability and biocompatibility of zno nanostructures”, adv. mater.2006, 18, pp. 2432-2435. [29] h. j. park and s. mho: “electrochemical impedance spectroscopy and voltammetry of zinc in dilute alkaline solutions”. analytical sciences vol.13 supplement (1997), pp. 311-316. [30] j. wang, “analytical electrochemistry”, wiley-vch. 2006. [31] s. a. maier, “plasmonics: fundamentals and applications”, springer, new york, 2007. 223 p. http://adsabs.harvard.edu/cgi-bin/author_form?author=zhao,+d&fullauthor=zhao,%20dongxu&charset=utf-8&db_key=phy http://adsabs.harvard.edu/cgi-bin/author_form?author=ding,+m&fullauthor=ding,%20meng&charset=utf-8&db_key=phy http://adsabs.harvard.edu/cgi-bin/author_form?author=zhao,+h&fullauthor=zhao,%20haifeng&charset=utf-8&db_key=phy http://adsabs.harvard.edu/cgi-bin/author_form?author=zhang,+z&fullauthor=zhang,%20zhenzhong&charset=utf-8&db_key=phy http://adsabs.harvard.edu/cgi-bin/author_form?author=zhang,+z&fullauthor=zhang,%20zhenzhong&charset=utf-8&db_key=phy http://adsabs.harvard.edu/cgi-bin/author_form?author=shen,+d&fullauthor=shen,%20dezhen&charset=utf-8&db_key=phy 88 o. szabó, s. flickyngerová, t. ignat, i. novotný, v. tvarožek [32] j. l. hammond, n. bhalla, s. d. rafiee and p. estrela, “localized surface plasmon resonance as a biosensing platform for developing countries”, biosensors 2014, 4(2), pp. 172-188. [33] y. cao, d. li, f. jiang, y. yang and z. huang, “engineering metal nanostructure for sers applications”, journal of nanomaterials, 2013, pp. 1238 (12). [34] o. szabo, s. kovacova, j. skriniarova, d. rossberg, v. tvarozek, “effect of annealing on properties sputtered au nanostructures”, adept 2015, pp. 120-123. [35] c. ratscha, j.a. venables, “nucleation theory and the early stages of thin film growth”, j. vac. sci. technol. a 21(5) (2003), pp. 96-109. [36] j. siegel, o. kvitek, p. slepicka, j.nahlik, j. heitz, v. svorcik, “structural, electrical and optical studies of gold nanostructures formed by ar plasma-assisted sputtering”, nuclear instruments and methods in physics research b 272 (2012), pp.193-197. facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 257 265 doi: 10.2298/fuee1702257s analytical test structure model for determining lateral effects of tri-layer ohmic contact beyond the contact edge  neelu shrestha, geoffrey k. reeves, patrick w. leech, yue pan, anthony s. holland school of engineering, rmit university, melbourne, victoria, australia abstract. contact test structures where there is more than one non-metal layer, are significantly more complex to analyse compared to when there is only one such layer like active silicon on an insulating substrate. here, we use analytical models for complex test structures in a two contact test structure and compare the results obtained with those from finite element models (fem) of the same test structures. the analytical models are based on the transmission line model and the tri-layer transmission line model in particular, and do not include vertical voltage drops except for the interfaces. the comparison shows that analytical models for tri-layer contacts to dual active layers agree well with fem when the specific contact resistances (scr) of the contact interfaces is a significant part of the total resistance. overall, there is a broad range of typical dual-layer-to-tltlm contacts where the analytical model works. the insight (and quantifying) that the analytical model gives on the effect of the presence of the contact, on the distribution of current away from the contact is shown. key words: ohmic contact, specific contact resistance, transfer length, transmission line model 1. introduction the study of specific contact resistivity (c, [ω.cm 2 ]), one of the most important parameters to investigate metal semiconductor interfacial properties, has been reported using several test structures [e.g. 1-6]. the effect of this parameter on the resistance of device components is also an area of investigation and an example is the effect of interfaces in via liners [7]. the transmission line model (tlm) is the commonly used among them and was first applied for analysing/determining the resistance components of semiconductor ohmic contacts, by shockley in 1964 [5]. for many years the tlm test structure was considered accurate for contacts such as aluminium to silicon. a more complex tlm model for contacts such as alloyed ni/ge/au to gaas was introduced by received september 26, 2016; received in revised form november 16, 2016 corresponding author: neelu shrestha school of engineering, rmit university, melbourne, victoria, australia (e-mail: neelu_shrestha@hotmail.com) 258 n. shrestha, g. k. reeves, p. w. leech, y. pan, a. s. holland reeves [6]. the example given has a metal, an alloyed and a semiconductor layer. another example of a tri-layer contact structure is aluminium-silicide–silicon. the analytical models due to the dual-layer and tri-layer structures considered the contact as beginning at the leading edge of the metal. yao li [8] developed an analytical model to show (and quantify) how the presence of the contact affects the current (and hence voltage distribution) away from the leading edge. this was also investigated by reeves [9]. the works in these references [6, 8, 9] were combined in the investigation for this paper and their utilisation and further demonstration of accuracy is demonstrated. the analytical model demonstrated in this paper can provide a solution to the 2l-tlm, contact structure (a metal contact to a dual semiconductor layer (see fig. 1(a))), considered intractable in 1994 [10]. for most semiconductor devices the sheet resistance of the semiconductor active layer is sufficient to quantify its resistive effect even for typical planar contacts such as source/drain contacts. the principle of the tlm models for ohmic contacts relies on this being so. only in cases where the specific contact resistance of the metal/semiconductor interface is extremely small, there will be significant vertical voltage drop in the semiconductor layer. tlm models (analytical type models) do not account for vertical voltage drop in the semiconductor layer but fem models do. this paper investigates the difference. fem is a powerful technique and is used here to demonstrate the accuracy of the analytical models which are also expanded here to demonstrate their usefulness as one approach to quantifying the total resistance encountered by current between two tri-layer contacts to a dual-layer (parallel sheet resistances) structure as shown in fig 1(a) and the corresponding resistor network model shown in fig 1(b). fig. 1 test structure for investigating resistance effects of contacts to dual-active layers. (a) schematic of test structure and (b) resistor network model showing the tltlm [6] contact model connected to the dual active layer model [9]. the one resistor that is common to the resistor network of both analytical models is indicated analytical test structure model for determining lateral effects of tri-layer ohmic contact... 259 2. methodology the general tri-layer contact structure investigated in this work is illustrated diagrammatically with its three layers, namely a metal layer, an intermediary active layer a and a bottom active layer b in fig.1. the metal layer is an ideal metal layer for tlm models where the metal is at an equipotential. the fem model considers this by making the metal in the fem metal have the same effect by having extremely low resistivity, so it is effectively at an equipotential. two interfaces with associated specific contact resistances (scr) are included in the model and these occur between the metal and layer a and layer a and b with their scr given as ca and cu respectively. the sheet resistance of the metal at the metal-semiconductor is considered to be zero and, rsa and rsu are the sheet resistance of layer a and b respectively. (the subscripts -sa, -su, -ca and -cu are used to maintain uniformity in the expressions with refs [6] and [9].) the total current given to the structure is i0. i1 and i2 represent the current in layer b and a respectively. here, i3 is the total current exiting through the contact. the length of the contact is d, the length between two contacts is l and w is the width of the structure. the analytical expressions for the calculation of total resistance are derived combining the reeves’ tri-layered transmission line model (tltlm) [6] and yao li’s model [8]. because the models are based on the transmission line model (tlm), (which can at best be regarded as a 2-d model) the vertical voltage dropped is not included except for the interfaces. as defined by berger [11], the  parameter gives the ratio of voltage drop across the contact interface to the vertical voltage drop in the semiconductor layer and thus determines whether a metal and a semiconductor contact is in 3d circumstances or not (fem is utilised in this work to investigate 3-d effects).  = ρc / (ρb * t) (1) where, ρb and t are the resistivity and thickness of the individual semiconductor layer respectively. consequently, the model presented in this work best suits to modelling contacts when  is typically greater than 1 because the model will be 2-d. when the two models, dual active layer [8] and tltlm [6] are combined to describe the test structure, the voltage drop across the common resistor (see insert in fig.1) between two models must be the same and thus the current division factor, f can be determined by solving for voltage using this boundary condition. reeves [9] in 1997 reported a similar structure applied to the source/drain region of a mosfet (with a short extended dual (silicide/silicon) active layer before the contact) and considered all current entering the dual layer through layer b. in this work, we focus on the more general case of a test structure in which current enters the dual layer through both the layers as shown in fig.1. the assumption made is that the two contacts are geometrically and electrically identical. in the following equations, f1 is the current division factor at the intersection where current is leaving one tltlm contact and entering the dual active layer. factor f is the modified current division factor at the intersection of a tltlm contact and the dual layer while current is entering the tltlm contact from the dual active layer. thus the boundary condition used is i1(x)=iof1 at x=l and i1(x)=iof at x=0. the expression of modified current division, f is given by. ( ) ( ) (2) 260 n. shrestha, g. k. reeves, p. w. leech, y. pan, a. s. holland where, transfer length for the dual active layer, √ (3) ( ) (4) ( ( ) ( ( ) ) ( ) ( ) ) (5) ( ) ( ) ( ) ( ) ( ) ( ) ( ) (6) ( ( ) ( )) ( ) ( ) ( ) (7) reeves [6] demonstrated that the current (i1(x)) through layer b and contact resistance (rc) in the tltlm are given by ( ) ( ( ) ) ( ( ) ( ) ( ) ( ) ) (8) { ( ) ( ) } (9) where, ( ) ( ) (10) ( ) ( ) (11) ( ) (12) the equation for a, b and c are shown in the appendix a1, a2 and a3. using the work reported by li et al. [8], the current (i1(x)) through the lower layer b of the dual-layer structure and total resistance, rtot(li) is given by ( ) ( ( ) ( ) ( ) ( ) ( ) ( ) ) (13) ( ) ( ) (14) where, (15) ( ) (16) for two contacts (in a tlm type test structure) with identical geometrical and electrical features, the total resistance, rtot(std) between probes connected to each contact is usually given by ( ) (17) the numerical evaluation of total resistance and current flow in all layers with different contact parameters giving various  values are shown using the table and graphs obtained from matlab. also, models with similar contact parameters were simulated using finite element modelling (fem) and the results for rtot(fem), rtot(li) and rtot(std) are compared in this work. analytical test structure model for determining lateral effects of tri-layer ohmic contact... 261 3. results and discussion the table below gives sets of contact material parameters used for analysis of the test structure of fig. (1). the values a and u for two layers, (=ρc/(ρb*t), where ρb and t are the semiconductor layer resistivity and thickness, differs in sets due to different contact parameters. the contact length is 10m and the length between the contacts (dual active layer) is 20m for set 1, 2 and 3. but, the length for set 4 is 5.2m. the thickness of layers a and b are considered as 0.2 and 0.6m respectively. the distances were chosen as being typical of a tlm type test structure. the value came about because of the mesh density used, which was the same for all models. table 1 contact parameters for the test structure set rsa(ω/sq) rsu(ω/sq) ρca (ω.cm2) ρcu (ω.cm2) l (m) a u rtot (fem) rtot (li) rtot (std) 1 40 60 8.0e-7 1.6e-6 20 50 7 576.1 575.7 587.8 2 30 40 8.0e-7 9.0e-6 20 66.67 62.50 445.9 445.4 482.9 3 40 60 8.0e-9 1.0e-8 20 0.50 0.04 487.4 507.8 507.7 4 40 60 8.0e-7 1.6e-6 5.2 50 7 220.8 220.1 232.4 the analytical and fem results are in excellent agreement for sets when the  value is greater than 1. moreover, the error percentage is less between rtot(fem) and rtot(li) results compared to rtot(std). this clearly shows that the redistribution of current near the intersection of tltlm and the dual layer affects the total resistance between the contacts. in sets 1 and 2, rtot(fem) and rtot(li) are practically the same and the error percentage is less than 1 in both cases(considering the fem model to give the most realistic result). however, the error is 2% between rtot(fem) and rtot(std) for set 1 and it increased to 8% for set 2. this is because the transfer length in the dual active layer is longer for set 2 than set 1. the distance before at the leading edge of the contact that is affected by the redistribution of current due to the contact is directly proportional to the transfer length of the dual active layer. consequently, the total resistance in the dual layer of the test structure will be different to rsh*l/w (where rsh is the effective sheet resistance of the two parallel active layers). in set 3, both rtot(std) and rtot(li) have approximately 4% disagreement with the fem results. in set 4, all the parameters are the same as set 1 except that the length between the contacts is 5.2m. as the dual active layer is shorter, and the transfer lengths do not change, the effect of the contacts on current distribution in the dual layer is relatively bigger. the error is ~5% between rtot(fem) and rtot(std) and less than 1% with rtot(li). thus, the expressions described in this work can give an accurate insight into the electrical behaviour of the test structure, provided that >1. the graph plotted below in fig. 2(a) is for set 1 and the point of contact for tltlm and dual layer is considered to be point 0. the length of the tltlm contact region is 10 µm and the dual layered region is 20µm. it shows the flow of current starting from the point at which current exits one tltlm contact and enters the dual layer. here, i1 (solid line) is the current flowing in layer b, i2 (dotted line) in layer a and i3 (fine dotted line) represents the total current in the tltlm contact. the graph illustrates that i1 distributes itself and tends to remain constant at a ratio of rsa:rsu (i.e. i1:i2=4:6) in the dual layered structure. but, the flow is disturbed near the point when current enters the tltlm structure from the dual layer. 262 n. shrestha, g. k. reeves, p. w. leech, y. pan, a. s. holland the fem result confirms the same as shown in fig. 2(b). the voltage contour is uniform at the middle of the dual layer, and the contour is disturbed near the tltlm contact region. fig. 2 (a) current distribution in one tltlm contact and dual layer contact regions for a test structure with rsa=40 ω/sq, rsu= 60ω/sq, ρca=8e-7ω.cm2, ρcu= 1.6e-6ω.cm2 with dual active layer of 20m (b) distribution of corresponding voltage contours, determined by fem for the test structure fig. 3(a) shows results for set 4 when all the other parameters are same as set 1 except the length between the contacts is reduced to 5.2m. because of this, the current flow with ratio rsa:rsu is over a shorter length. this leads to greater variation in total resistance. the higher error value of ~5% between rtot(std) and rtot(fem) shows that the total resistance between contacts is not given by rsh*l/w. fig. 3 (a) current distribution in a tltlm contact and dual layer contact regions for a test structure with rsa=40 ω/sq, rsu= 60ω/sq, ρca=8e-7ω.cm2, ρcu= 1.6e-6ω.cm2 with a dual active layer of 5.2m in length (b) distribution of corresponding voltage contours, determined by fem for the test structure analytical test structure model for determining lateral effects of tri-layer ohmic contact... 263 4. conclusion two variations of transmission line model networks, namely tri-layer tlm and a dual layer network, for modelling current in semiconductor contact regions, were combined to model a test structure with multiple layers. a comparison of the mathematical analysis and a two-dimensional finite element model of the test structure with two metal contacts to a dualactive layer, show that the combination of tltlm and the dual-layer network expressions provides accurate analysis for these test structures. the limitations on the accuracy of expressions have been presented in terms of the  parameter. the distribution of current through the dual-layer and tltlm contact region is discussed in detail to understand its influence on the total resistance of the test structure. this distribution is accurately represented by the combined tltlm-dual-active layer model investigated which is an improvement on models where the current distribution and sheet resistance is considered uniform between contacts. references [1] a. m. collins, y. pan, a. s. holland, “using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors”, facta universitatis, electronics and energetics, vol. 28, no. 3, september 2015, pp. 457-464. [2] y. pan, a. m. collins and a. s. holland, "determining specific contact resistivity to bulk semiconductor using a two-contact circular test structure", in proceedings of the ieee international conference on miel, may 2014, pp. 257-260. [3] v. gudmundsson, p. hellstrom, and m. ostling, “error propagation in contact resistivity extraction using cross-bridge kelvin resistors,” ieee trans. electron devices, vol. 59, no. 6, pp. 1585–1591, june 2012. [4] a. s. holland, g. k. reeves, “new challenges to the modelling and electrical characterisation of ohmic contacts for ulsi devices”, in proc. of the 22nd international conference on microelectronics (miel 2000), vol. 2, niš, serbia, pp. 461-464, 2000. [5] w. shockley, “research and investigation of inverse epitaxial uhf power transistors”, air force atomic laboratory, wright-patterson air force base, rep. no. al-tdr-64-207, sept. 1964. [6] g. k. reeves, h. b. harrison, “an analytical model for alloyed ohmic contacts using a tri-layer transmission line model”, ieee trans. electron devices, vol. 42, no. 8, p. 1536. 1995. [7] g. k. reeves, a. s. holland, p.w. leech, “influence of via liner properties on the current density and resistance of vias”, in proc. of the 23rd international conference on microelectronics (miel 2002), vol. 2, niš, yugoslavia, pp. 535-538, 2002. [8] y. li, g. k. reeves, h. b. harrison, “correcting separating errors related to contact resistance measurement”, microelectronics journal, vol. 29, 1996. [9] g. k. reeves, h. b. harrison, “using tlm principles to determine mosfet contact and parasitic resistance”, solid-state electronics, vol. 41, no.8, 1997. [10] y. shiraishi, n. furuhata, a. okhamoto, “influence of metal/n-inas/interlayer/n-gaas structure on nonalloyed ohmic contact resistance”, journal of applied physics, vol. 76, p. 5099, 1994. [11] h. h berger, “models for contacts to planar devices”, solid state electronics, vol. 12, 1972. appendix the expressions for the tltlm √* { √( ( )⁄ )} + (a1) √{ √( ( )⁄ )} (a2) (a3) 264 n. shrestha, g. k. reeves, p. w. leech, y. pan, a. s. holland matlab code %calculation of f factor rs=rsa+rsu; rsh=(rsu*rsa)/(rsu+rsa); al=sqrt(rs/pcu); c=(rs/pcu)+(rsa/pca); z=sqrt((c*c)-(4*rsu*rsa/(pcu*pca))); a=sqrt((c-z)/2); b=sqrt((c+z)/2); d=al*pcu*coth(al*l); e=al*pcu*(rsa*cosh(al*l)+(f1*rs-rsa))/(rs*sinh(al*l)); h=((b*((rsu-(pcu*a*a))*tanh(a*d)))-(a*((rsu-(pcu*b*b))*tanh(b*d))))/((b*ba*a)*tanh(b*d)*tanh(a*d)); g=rsa*(b*tanh(a*d)-a*tanh(b*d))/((b*b-a*a)*tanh(b*d)*tanh(a*d)); f2=(e+g)/(d+h+g); % current flow dual active layer a=rsh/rsu; y1=sqrt(pcu/(rsu+rsa)); i11=i0*(a+((f2-a)*sinh((l-x)/y1)/sinh(l/y1))+((f1-a)*sinh(x/y1)/sinh(l/y1))); i21=i0-i11; % current flow tltlm contact c=((rsa+rsu)/pcu)+(rsa/pca); z= (c*c)-(4*rsu*rsa)/(pcu*pca); a=sqrt((c-sqrt(z))/2); b=sqrt((c+sqrt(z))/2); p= f2*(rsu-pcu*a*a)-(1-f2)*rsa; q= f2*(rsu-pcu*b*b)-(1-f2)*rsa; i12=(i0/(pcu*(b*b-a*a)))*((p*sinh(b*(d+y))/sinh(b*d))-(q*sinh(a*(d+y))/sinh(a*d))); i23=(i0/(rsa*pcu*(b*b-a*a)))*((p*(rsu-pcu*b*b)*sinh(b*(d+y))/sinh(b*d))-(q*(rsu pcu*a*a)*sinh(a*(d+y))/sinh(a*d))); itot=i0-(i12+i23); plot(x,i11); hold on; plot(y,i12); hold on; plot(x,i21); hold on, plot(y,i23); hold on; plot(y,itot); % contact resistance c1=((rsa+rsu)./pcu)+(rsa./pca); z1= (c1.*c1)-((4.*rsu.*rsa)./(pcu.*pca)); a1=sqrt((c1-sqrt(z1))/2); b1=sqrt((c1+sqrt(z1))/2); k1=rsu./(pcu.*w.*(b1.*b1-a1.*a1)); analytical test structure model for determining lateral effects of tri-layer ohmic contact... 265 x1=tanh(b1*d); y1=tanh(a1*d); p1=f2.*(rsu-(pcu.*a1.*a1)); q1=f2.*(rsu-(pcu.*b1.*b1)); k1=(1-f2).*rsa; rc=k1.*(((p1-k1)./(b1.*x1))-((q1-k1)./(a1.*y1))); % total resistance using standard formula rtot=2*rc+(rsh*l/w) % total resistance using yao et al. formula when dual layer is longer beta=2*((((f1+f2)*rsu)/(2*rsh))-1); bcor=(rsh*beta)/(w*al); rtotli=2*(rc+(bcor/2))+(rsh*l)/w; 12289 facta universitatis series: electronics and energetics vol. 37, no 2, june 2024, pp. 343 354 https://doi.org/10.2298/fuee2402343p © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper hbem analysis of elliptical-shaped microshield lines: parameter effects and simulation validation mirjana perić, natalija ivković, isidora jovanović university of niš, faculty of electronic engineering, niš, serbia orcid ids: mirjana perić https://orcid.org/0000-0001-8670-2254 natalija ivković https://orcid.org/0009-0006-5218-4544 isidora jovanović https://orcid.org/0009-0000-1150-6611 abstract. this paper employs the hybrid boundary element method to ascertain the characteristic parameters of elliptic-shaped microshield lines. as a special case of these lines, the microshield with circular shape is also analysed. the study investigates the impact of various parameters on the characteristic impedance as well as effective relative permittivity. a comparison is made between the results obtained from the proposed method and those acquired through simulation software, revealing a high level of agreement. key words: characteristic parameters, finite element method, hybrid boundary element method, microshield lines 1. introduction microshield lines can be considered as an evolution part of conventional microstrip lines, as they avoid some of the technology problems that appear in classical microstrip lines. these lines can operate without the need for via holes or the use of air bridges for ground equalization, which can be sources of signal loss and noise. also, the shield helps to reduce electromagnetic coupling between adjacent lines. in [2], the edge-based finite element method is applied to analyse trapezoidal shaped microshield lines, considering configurations with one, two and three strips. the paper undertakes a full-wave analysis, determining cut-off wavelengths and field patterns for various geometries and conductors’ positions. kiang [3] employs a potential-matching approach to calculate the capacitance as well as characteristic impedance of microshield lines with trapezoidal, circular and v-shaped shields and layered substrates. this study encompasses lower shielded and fully shielded lines, highlighting the impact of the conductors and gap widths on characteristic parameters. the author emphasizes the received november 20, 2023; revised january 09, 2024; accepted january 14, 2024 corresponding author: mirjana perić university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia e-mail: mirjana.peric@elfak.ni.ac.rs *an earlier version of this paper was presented at the 16th international conference on applied electromagnetics (пес 2023), august 28-30, 2023, in niš, serbia [1]. https://orcid.org/0000-0001-8670-2254 https://orcid.org/0009-0006-5218-4544 https://orcid.org/0009-0000-1150-6611 344 m. perić, n. ivković, i. jovanović significance of coplanar and shield ground positions in influencing field distribution and thus determines the trend of the characteristic impedance variation. characteristic impedance’s analytical expressions for v, elliptic and circular-shaped microshield lines are established in [4] through the conformal mapping method, presuming pure-tem propagation. the authors adopt a graphical approximation, particularly suitable for circular and elliptic-shaped lines, along with the estimation method. this estimation method finds application in calculating the characteristic impedance of coaxial lines with square and rectangular inner conductors. following this approach, the characteristic impedance is determined as the mean value between upper and lower bounds. the effects of different microshield shapes are presented through the obtained numerical results. dib and katehi applied in [5] the conformal mapping method along with the point matching method, for rectangular-shaped single microshield lines analysis. open sided single and coupled microshield structures are assumed for simplicity in [6], where the conformal mapping method is also used. the coupling coefficient distribution is determined. as a type of machine learning process, an artificial neural network has been applied in [7] for characteristic parameters determination of elliptic and circular-shaped microshield lines. several algorithms have been used to train the neural models. training data sets are obtained following the procedure given in [4]. the authors concluded that the obtained results are in close match with the results that can be found in the literature. it is also possible to use the hybrid boundary element method (hbem) for the microshield lines analysis. the quasi-static tem analysis of v-shaped microshield lines is performed in [8] to determine the characteristic parameters for single as well as coupled structures. based on the hbem application for the microstrip lines analysis, the characteristic parameters of single and coupled elliptic-shaped microshield lines will be calculated in this paper. the code, written in [8], had to be modified, considering that different configurations should be analysed. the effects of the parameters and dimensions of elliptic-shaped microshield lines on the characteristic impedance and effective relative permittivity will be shown. those geometries are presented in fig. 1. the conductors, of width w and thickness d, are placed on a substrate of elliptical crosssection, with the relative permittivity r, width b and thickness h2. the slot width is denoted with s. a circular shaped microshield line is the special form of the elliptic-shaped geometry when h2 and b / 2 are equal. the upper part of the shield is of width a and height h1. a) b) fig. 1 (a) single elliptic-shaped microshield line; (b) coupled elliptic-shaped microshield line hbem analysis of elliptic-shaped microshield lines 345 in the case of the single microshield line, fig. 1a, the strip is on the potential v = v0. when the coupled structure is analysed, fig. 1b, the both strips are on the potential v0 (even mode) or on the opposite potentials  v0 (odd mode). the shield is on the zero potential (v = 0) for both geometries. the paper begins with a brief theoretical background on the hybrid boundary element method. following this, numerical results for characteristic parameters are provided for structures, both single and coupled, with elliptical and circular cross-sections. the modelling of these geometries was carried out using the femm software [9], and the obtained results were subsequently verified against the hbem values. the obtained results have been discussed. main conclusions are given in the last section of this paper. 2. theoretical background for over a decade, the hybrid boundary element method has demonstrated its successful utilization in solving various electromagnetic problems. in-depth elucidation of its application in microstrip line analysis can be found in [10-13]. this method offers versatility in tackling both two and three-dimensional problems. its simplicity and precision set it apart from alternative approaches, presenting a fusion of the equivalent element method (eem), the boundary element method (bem) and the point matching of the electric scalar potential and electric field strength vector components. main part of this method is an introduction of the equivalent electrodes concept, taken from the eem. nevertheless, the eem falls short when handling heterogeneous media, unlike hbem. in the hbem approach, all boundaries within the designated geometry are portioned into strips, each of which is substituted with the equivalent electrodes (ees). in order to illustrate this concept, in fig. 2a a multilayered coupled microshield line with arbitrary shield as well as arbitrary strips cross-sections is presented. the corresponding hbem model is given in fig. 2b. at the separating surfaces of two layers the polarized charges are placed in the air. free charges are placed in corresponding dielectric at the conductors’ surfaces. although the total (free and polarized) charges actually exist at the conductors’ surfaces, it is shown in [10] that an approximation with acceptable accuracy can be done; therefore, only the free charges are taken into account. using that approximation, the electric scalar potential at any point of the formed equivalent electrodes system from the fig. 2b is ,)()(ln 2 )()(ln 2 )()(ln 2 )()(ln 2 a 1 1 1 2 p 2 p 0 p 1 2 3f 2 3f 3f 1 2 2f 2 2f 2f 1 2 1f 2 1f 1 1f 3 2 1     − = = = = = + −+−   − −−+−   − −−+−   − −−+−   −= n j m m jmjm jm k k kk layeringcorrespond k k k kk i k k k kk i k j yyxx q yyxx q yyxx q yyxx q v (1) 346 m. perić, n. ivković, i. jovanović where mj is the number of equivalent electrodes (ees) (polarized charges) on the j-th boundary surface between two layers (j = 1,…, (n−1)), ki (i = 1, 2, 3) is the number of equivalent electrodes (ees) (free charges) on the boundary surface between the conductor and the layer, and a is an additional constant. q’f and q’p are free and polarized line charges (equivalent electrodes), respectively. with (xf,yf) and (xp,yp) the positions of those charges are denoted a) b) fig. 2 a) multilayered coupled microshield line; b) hbem model hbem analysis of elliptic-shaped microshield lines 347 the electric field strength vector is vgrad−=e . (2) the total number of unknowns (equivalent electrodes), totn , is denoted by: 1 1 1 3 1 tot ++=  − == n j j i i mkn . at the interfaces of two layers, the boundary condition is employed to govern the normal component of electric field strength vector. moreover, the potential along the created model aligns with the strips and shield potentials. this process culminates in the formulation of a system of linear equations. solving this system yields the values of equivalent electrodes charges, enabling the calculation of the system’s capacitance, characteristic impedance, effective relative permittivity, and more. the effective permittivity and characteristic impedance of the elliptic-shaped microshield line are given as 0 eff r c c   = and (3) eff r 0c c  = z z , (4) where c’ is the capacitance per unit length, and c’0 and zc0 are the capacitance per unit length and characteristic impedance, respectively, when replacing the dielectric substrate by air. obtained hbem results for characteristic impedance will be compared with femm software [9], and an error rate calculated as 100[%] femm c femm c hbem c  − = z zz , (5) where indexes hbem and femm correspond to the hbem and femm results, respectively. 3. results and discussions the characteristic impedance results convergences of the single and coupled ellipticshaped microshield lines are given in fig. 3a and fig. 3b, respectively. dimensions of the single microshield line from fig. 1a, are: 6r = , 0.4/ =wa , 0.3/ =wb , 2.0/ =wd and 0.1// 21 == whwh . for the coupled structure from fig. 1b, the parameters are following: 6r = , 0.4/ =wa , 0.3/ =wb , 2.0/ =wd , 5.0/ =ws and 0.1// 21 == whwh . the good results convergence was achieved already for 1000 unknowns, so that number of unknowns will be used for all following calculations. additionally, the computation time, indicated by a red dotted line, is displayed. both figures also include the results obtained through femm 4.2 simulation software [9], utilized to validate the computation approach. this software relies on the application of the finite element method. 348 m. perić, n. ivković, i. jovanović a) b) fig. 3 results convergence for: a) single and b) coupled (even and odd modes) ellipticshaped microshield lines the characteristic impedance values versus strip thickness are shown in table 1 for the geometry from fig. 1a. the microshield dimensions are: r = 6, a / w = 4.0, b / w = 3.0, h1 / w = 1.0 and h2 / w = 1.5. those results have been compared with the femm software results. the error rate, calculated using eq. (5), is also shown. table 1 characteristic impedance [ω] versus strip thickness wd / hbem femm [%] 0.05 53.942 53.466 0.90 0.10 52.010 51.673 0.65 0.15 50.307 50.042 0.53 0.20 48.721 48.510 0.43 number of finite elements in femm application is about 250000. increasing the strip thickness, the characteristic impedance and effective relative permittivity decrease. note that the values given in table 1 are in a very good agreement and the maximum error rate is less than 1%. tables 2 and 3 give the characteristic impedance and effective relative permittivity distribution versus normalized microshield width, a / w, for substrate permittivity r = 6 for single and coupled circular-shaped microshield lines. the other parameters are: 0.3/ =wb , 2.0/ =wd , 0.1/1 =wh and 5.1/2 =wh (single line) and 0.3/ =wb , 2.0/ =wd , 5.0/ =ws , 0.1/1 =wh and 5.1/2 =wh (coupled line). table 2 characteristic impedance ][c z versus microshield width, wa / single coupled (even mode) coupled (odd mode) a / w hbem femm hbem femm hbem femm 3.5 48.670 48.456 45.607 45.507 32.370 32.246 4 48.721 48.501 45.963 45.860 32.548 32.419 4.5 48.740 48.509 46.029 45.926 32.584 32.449 5 48.763 48.512 46.055 45.936 32.604 32.453 6 48.834 48.511 46.035 45.939 32.598 32.454 7 48.804 48.502 46.028 45.936 32.604 32.451 8 48.820 48.498 46.041 45.933 32.622 32.448 hbem analysis of elliptic-shaped microshield lines 349 table 3 effective relative permittivity eff r versus microshield width, wa / . single coupled (even mode) coupled (odd mode) wa / hbem femm hbem femm hbem femm 3.5 2.9263 2.9579 3.0314 3.0639 2.9342 2.9715 4 2.9273 2.9610 3.0534 3.0890 2.9477 2.9879 4.5 2.9255 2.9617 3.0563 3.0943 2.9486 2.9915 5 2.9219 2.9617 3.0535 3.0957 2.9452 2.9927 6 2.9113 2.9618 3.0522 3.0959 2.9430 2.9929 7 2.9126 2.9626 3.0484 3.0962 2.9384 2.9932 8 2.9086 2.9626 3.0425 3.0962 2.9320 2.9933 in tables 2 and 3 the femm results [9] are also presented. a good results match is achieved. the characteristic parameters presented in those tables do not change significantly, regardless of the microshield width. taking into account that visual changes are easier to notice, the effects of variations in other parameters, for easier analysis, will be shown graphically in the following figures for elliptic and circular-shaped microshield lines. fig. 4 gives the characteristic impedance distribution versus normalized substrate thickness h2 / w, for different values of dielectric permittivity r for single (a) and coupled (b) (even and odd modes) elliptic-shaped microshield lines. the odd mode values are denoted with dashed red lines in fig. 4b. a) b) fig. 4 characteristic impedance versus h2 / w, (varied r) for: a) single and b) coupled elliptical-shaped microshield lines the other dimensions are: 0.4/ =wa , 0.3/ =wb , 2.0/ =wd and 0.1/1 =wh (single line) and 0.4/ =wa , 0.3/ =wb , 5.0/ =ws , 2.0/ =wd and 0.1/1 =wh (coupled line). when the substrate permittivity increases, the characteristic impedance decreases. increasing the substrate thickness, the characteristic impedance increases too. those changes are smaller if h2 / w > 1.2. the characteristic impedance results for the odd mode 350 m. perić, n. ivković, i. jovanović are smaller than even mode values. it is interesting to notice that for the certain combinations of parameters the characteristic impedances for both modes can be equal. the distributions of characteristic impedance are plotted in fig. 5a and 5b against the normalized microshield high, h1 / w, for various strip thicknesses, for single (fig. 5a) and coupled (fig. 5b) circular-shaped microshield lines. the parameters are: 6r = , 0.4/ =wa , 0.3/ =wb and 5.1/2 =wh (single line) and 6r = , 0.4/ =wa , 0.3/ =wb , 5.0/ =ws and 5.1/2 =wh (coupled line). it can be noticed that increasing the parameter h1 / w, the characteristic impedance increases too. when the strip thickness increases the characteristic impedance decreases. an influence of strips thickness on the characteristic impedance values for coupled microshield line is presented in fig. 5c. the additional parameter is the strips distance. input parameters are: r = 6, 0.4/ =wa , 0.3/ =wb , h1 / w =1.0 and h2 / w = 1.5. a) b) c) fig. 5 characteristic impedance versus: a) h1 / w (varied wd / ) for single circular-shaped microshield line; b) h1 / w (varied wd / ) for coupled circular-shaped microshield line; c) wd / (varied ws / ) for coupled microshield line. hbem analysis of elliptic-shaped microshield lines 351 increasing the strips distance, the characteristic impedance of even mode decreases. but, the characteristic impedance in odd mode firstly increases then decreases for 5.0/ ws . it is also interesting to notice that the characteristic impedance values of odd mode, when ws / is 0.3, are approximately equal to the values when the parameter ws / is 0.9 for the even mode, when 1.0/ wd . equipotential curves for the single as well as coupled microshield lines for different values of wh /2 are given in fig. 6, for the following parameters: r = 6, 0.4/ =wa , 0.3/ =wb , 2.0/ =wd and 0.1/1 =wh (single line) and r = 6, 0.4/ =wa , 0.3/ =wb , 5.0/ =ws , 2.0/ =wd and 0.1/1 =wh (coupled line). one can observe the effects of the microshield cross-section on potential distribution. a) 5.1/2 =wh b) 25.0/2 =wh c) 5.1/2 =wh d) 25.0/2 =wh e) 5.1/2 =wh f) 25.0/2 =wh fig. 6 equipotential curves distribution for single and coupled microshield lines: a) and b) single; c) and d) coupled (even mode); e) and f) coupled (odd mode) 352 m. perić, n. ivković, i. jovanović 3d potential distribution in x0y plane is given in fig. 7 for the coupled geometries (even and odd modes) shown in figs. 6c and 6e. influences of different strips potentials as well as microshield line shape are evident. a) b) fig. 7 normalized potential distribution of a coupled microshield line in yx0 plane for: a) even and b) odd modes another comparison can be made between the hbem results and those given in [7]. the characteristic parameters distribution versus the slot width s and effective relative permittivity is illustrated in fig. 8 for the single microshield line with elliptical crosssection with the following parameters, taken from [7]: b = 1385.64 m, h1 = 3 mm and h2 = 400 m and different values of substrate permittivity r = 2.55, 3.78, 10 and 12.9. a) b) fig. 8 a) characteristic impedance and b) effective relative permittivity versus slot width s (varied r ) for single elliptic-shaped microshield line the results from [7] are shown in the same figure. in this comparison some assumptions should be done, because the authors in [7] take into account that the conductor’s thickness is negligible and the microshield width (parameter a ) is infinite. considering that the results given in tables 2 and 3 show that the characteristic parameters do not change significantly, regardless of the microshield width, the additional parameters hbem analysis of elliptic-shaped microshield lines 353 necessary for the hbem application are d / w = 0.02 and a / w {460}. widening the slot leads to higher characteristic impedance and minimal alternations in the effective relative permittivity. raising the substrate’s permittivity results in a decrease in characteristic impedance, as already observed in fig. 4, while also causing an increase in effective relative permittivity, which can be seen from fig. 8. 4. conclusion the characteristic impedance results obtained through the hbem exhibit a high degree of concurrence with the femm outcomes. demonstration of the impact of microshield dimensions on characteristic parameters has been showcased for both single and coupled structures. this method’s efficacy in analysing analogous geometries, valuable in practical applications, has been established. when employing the hbem, the main diagonal of the system matrix exhibits the highest values. this characteristic contributes to the improved conditioning of the system of linear equations, resulting in shorter computation time. in formal mathematical representation, the hbem bears resemblance to the boundary element method (method of moments), yet a crucial disparity lies in both the physical underpinnings and the matrix establishment process. it is important to highlight that, in the application of the hbem, integration of any form is avoided. in contrast, the method of moments solutions invariably involves numerical integration, thereby introducing challenges in resolving non-elementary integrals. the hbem simplicity and precision remain evident comparing to the other methods, and as the number of equivalent electrodes increases, a close results match is obtained. acknowledgement: this work has been supported by the ministry of science, technological development and innovation of the republic of serbia. the authors would like to extend a sincere appreciation to dr. saša s. ilić for the useful comments and invaluable suggestions during our previous scientific work, which greatly enriched the quality of our research. references [1] m. perić, s. ilić, n. ivković and i. jovanović, "characteristic parameters determination of circular-shaped microshield lines", in proceedings of the 16th international conference on applied electromagnetics – пес 2023, faculty of electronic engineering of niš, niš, serbia, august 28-30, 2023 pp. 150–153. [2] h. sun and y. wu, "research on cut-off wavelength of dominant mode and field patterns in trapezoidal microshield lines", turkish journal of electrical engineering and computer sciences, vol. 20, no. 4, pp. 463–477, 2012. [3] j.-f. kiang, "characteristic impedance of microshield lines with arbitrary shield cross section", ieee trans. on microwave theory and techniques, vol. 46, no. 9, pp. 1328–1331, 1998. [4] n. yuan, c. ruan and w. lin, "analytical analyses of v, elliptic and circular-shaped microshield transmission lines", ieee trans. on microwave theory and techniques, vol. 42, no. 5, pp. 855–859, 1994. [5] n. dib and l. katehi, "impedance calculation for the microshield line", ieee microwave and guided wave letters, vol. 2, no. 10, pp. 406–408, 1992. [6] e. costamagna and a. fanni, "conformal mapping analysis of microshield transmission lines", in proceedings of isse’95 – international symposium on signals, systems and electronics, san francisco, ca, usa, 1995, pp. 463–466. [7] s. kaya, m. turkmen, k. guney and c. yildiz, "neural models for the ellipticand circular-shaped microshield lines", progress in electromagnetics research b, vol. 6, pp. 169–181, 2008. 354 m. perić, n. ivković, i. jovanović [8] m. perić, s. ilić, a. vučković and n. raičević, "quasi-static tem analysis of v-shaped microshield lines", in proceedings of the 15th international conference on telecommunication in modern satellite, cable and broadcasting services telsiks 2021, niš, serbia, october 20−22, 2021, pp. 149−152. [9] d. meeker, femm, ver. 4.2, available at: http://www.femm.info/wiki/download. [10] m. perić, s. ilić, s. aleksić and n. raičević, "application of hybrid boundary element method to 2d microstrip lines analysis", int. journal of applied electromagnetics and mechanics, vol. 42, no. 2, pp. 179–190, 2013. [11] m. perić, s. ilić, s. aleksić and n. raičević, "characteristic parameters determination of different striplines configurations using hbem", aces journal, vol. 28, no. 9, pp. 858–865, 2013. [12] m. perić et al., "covered microstrip line with ground planes of finite width", facta universitatis, series: electronics and energetics, serbia, vol. 27, no. 4, pp. 589–600, 2014. [13] m. perić, s. ilić, a. vučković and n. raičević, "improving the efficiency of hybrid boundary element method for electrostatic problems solving", aces journal, vol. 35, no. 8, pp. 872–877, 2020. http://www.femm.info/wiki/download 12277 facta universitatis series: electronics and energetics vol. 37, no 2, june 2024, pp. 301 316 https://doi.org/10.2298/fuee2402301s © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper exploring supply voltage and temperature variation on xor-xnor cells with conventional / non-conventional techniques uma sharma1,2, mansi jhamb2 1ajay kumar garg engineering college, ghaziabad, india 2university school of information communication and technology, ggsipu, new delhi, india orcid ids: uma sharma https://orcid.org/0000-0001-6156-0552 mansi jhamb https://orcid.org/0000-0002-7975-8505 abstract. this paper delves into a comprehensive exploration of conventional and unconventional design approaches applied in xor-xnor cells. these cells play a crucial role in various arithmetic logic circuits with substantial computational capacity within vlsi designs operating at low voltage and power levels. the paper investigates the difficulties linked with both conventional and non-conventional design strategies. furthermore, it performs a relative evaluation of different xor/xnor cells documented in current literature concerning circuit design parameters. the results of this investigation indicate that the adoption of carbon nanotube field-effect transistor (cntfet) technology in lower technology nodes significantly decrease circuit delay, while floating gate metal-oxide semiconductor (fgmos) technology displays superior interpretation in terms of circuit power efficiency. the discussion also covers the utilization of finfet technology in the creation of xor/xnor cells. this paper conducts an assessment of the voltage and temperature resilience of these xor/xnor cells. the analysis has been undertaken utilizing the hspice tool at 22nm technology node. the xor/xnor cell based on fgmos demonstrates the highest resilience to voltage and temperature fluctuations. the major challenges encountered in the adoption of nonconventional technologies involve the lack of appropriate simulation models and the intricate fabrication processes. these challenges notably hinder the progress and adoption of these pioneering methodologies. key words: supply voltage resilience, temperature resilience, cntfet, xor/xnor implementation, static cmos and domino logic style, finfet and fgmos received november 17, 2023; revised december 31, 2023 and january 15, 2024; accepted january 22, 2024 corresponding author: uma sharma ajay kumar garg engineering college, ghaziabad, india. e-mail: uma.banasthali@gmail.com https://orcid.org/0000-0001-6156-0552 https://orcid.org/0000-0002-7975-8505 302 u. sharma, m. jhamb 1. introduction the rapid proliferation of user-friendly, portable electronic devices in the electronics industry has elevated the importance of low-power applications in vlsi system design. this surge in electrical and electronic device usage has incentivized designers to focus on reducing silicon footprint, enhancing computational speed, minimizing power consumption, and bolstering resilience [1].in the present day, portable electronic devices like cell phones, tablets, laptops, and notebooks have become an essential aspect of our lives. to optimize the performance of these electronic systems, designers are working towards creating circuits that are small in size, high in speed, and energy-efficient. xor/xnor cells find extensive application in various communication uses, serving as a sequence generator, parity checker, correlation and sequence detector, parity generator, as well as inmodulator and demodulator in (phase lock loop)pll [2-4]. with the rising demand for handheld devices like mobile phones, tablets, and notebooks, there's an increasing need for low-voltage, low-power solutions. this demand significantly influences the digital integrated circuit (dic) design landscape, where xor/xnor cells stand out due to their unique and valuable characteristics [5].the literature presents numerous circuit design methodologies for the digital circuit designs [1-7], with complementary metal oxide semiconductor (cmos) technology being the most prevalent for (low voltage low power) lvlp operations due to its lower threshold voltage and technology node. as cmos technology has scaled, si-mos devices gate length has reached the nanoscale, pushing mosfets into the deep sub-nanometer regime. however, downsizing devices beyond a certain point poses significant obstacles and concerns in cmos circuit design, including increased short channel effects, amplified transistor parameter variability, and reliability issues [8]. consequently, advanced technologies like finfet, and cntfet have been explored. among these cnfets (carbon nanotube field-effect transistor) stand out as the most welcomed technology for (ultra large scale integration) ulsi design due to their enhanced scalability compared to standard mos technology [9]. this characteristic makes it a promising alternative to replace mos technology in ulsi circuit design. additionally, floating gate mos technology has been reported as nonconventional method in the literature [8-14] as alternative solution. building upon the groundwork laid in the prior publication titled "design-space exploration of conventional/non-conventional techniques for xor-xnor cell" [9], this paper further addresses the challenges inherent in non-conventional methodologies, as discussed in the referenced research article [9]. the primary focus of this current research article is to perform an analysis of voltage and temperature resilience specific to the xor/xnor cell designs previously scrutinized in the same referenced research paper [9]. section ii presents an overview of technologies employed for implementing xorxnor cells. section iii focuses on the optimal selection of xor/xnor cell designs for low voltage, low power applications. section iv of this paper addresses the analysis of voltage and temperature variations for both conventional and non-conventional xor/xnor cell designs. finally, section v delivers the conclusion derived from the comparative analysis. exploring supply voltage and temperature variation on xor-xnor cells with … 303 2. exploring techniques for xor-xnor cell implementation: a comprehensive survey of technological approaches numerous design methodologies for implementing xor/xnor cells can be found in the literature [2, 5, 7-8, & 15-22]. in general, there are two main techniques for designing digital circuits: static and dynamic circuit design approaches. multiple phase cascading is limited by dynamic logic; however, variant called domino logic permits multiple stage cascading [16].when it comes to the implementation of high-speed digital circuits, “dynamic complementary metal-oxide-semiconductor (cmos) logic performs better than static cmos logic” because it operates faster and uses less power [23]. cmos technology is still widely used and preferred in chip design because of its low static power dissipation, which results in low power consumption. this attribute arises due to the absence of a direct connection between the ground terminal and the power supply in the circuit. cmos devices do not generate superfluous heat, in contrast to other logic circuit methodologies such as transistortransistor-logic or standard nmos/pmos logic, which have a tendency to maintain some residual current even during inactivity. an elevated volume of logic operations on an integrated circuit (ic) is made easier by these unique cmos features. in the realm of digital circuit design, both static and dynamic technologies find application in literature. this discussion encompasses the implementations of xor/xnor using these various technologies. 2.1. static xor/xnor cell the choice of logic style used in logic gates fundamentally influences the speed, area, energy consumption, and connection complexity of a circuit. radhakrishnan et al. [23], introduced a novel 6-t xor/xnor cell design depicted in figure 1(a). this design integrates pass transistors (pt) and transmission gates (tg). the development of this xor/xnor cell employed karnaugh map reduction techniques in combination with pass network theorems. this circuit experiences a prolonged worst-case delay when the input is either "11" or "00." in these situations, the outputs take two sequential steps to reach their ultimate voltage levels. few xor/xnor cells have been reported in the literature that can produce both xor and xnor outputs simultaneously while maintaining good output levels across all possible input combinations. however, these cells utilize a static inverter in their critical path [24-27]. goel et al. [3] presented an enhanced circuit for the simultaneous generation of xor and xnor outputs intended for application in designing the full adder module i. the newly proposed circuit, illustrated in fig. 1(c), adopts a cpl (complementary pass transistor logic) style configuration. this configuration removed the static not gate from the critical path of xor/xnor outputs; nevertheless, the circuit's delay persists at a higher level, primarily due to the cross-coupled structure. further, this issue is resolved by naseri and timarchi [5] who presented the xor/xnor gate using 12 transistors. this design shown in fig.1(e)also omits the requirement of static not gates along the circuit's critical path. consequently, it exhibits reduced delay and enhanced driving capability compared to designs employing cmos inverters to generate the xnor output. nevertheless, an external inverter is necessary for this circuit to generate the complement of the input (a). to enhance the performance of the circuit, it is possible to achieve improvement by removing the need for this external inverter. 304 u. sharma, m. jhamb kandpal [2] suggested xorx/nor circuit relies on a complementary pass-transistor logic (cpl) and cross-coupled structure. this configuration incorporates two pmos and three nmos transistors at the xor output, and conversely, two nmos and three pmos at the xnor output. in the xor segment, both pmos are linked in parallel as pass-transistor logic (ptl). similarly, at the xnor output, the nmos transistors are connected in parallel as ptl. this circuit shown in fig.1 (b) enables the simultaneous generation of full-swing xor–xnor outputs. additionally, efforts were made to boost the performance of the xor-xnor circuit by independently designing xor and xnor components. this design presented in [28] for xor-xnor functionality is implemented using cpl logic, incorporating a single static inverter. shown in fig.1(d), this circuit enables the independent realization of both xor and xnor outputs within the design framework that utilizes cpl logic with a solitary static inverter. in deep-submicron technologies, the static leakage power escalates owing to shortchannel effects. therefore, it is crucial to formulate circuit designs with low power consumption in deep-submicron technologies. m. moradi et al. introduce a groundbreaking approach in their work [22], presenting the input-controlled leakage restrainer transistor (iclrt) technique. this innovative method aims to mitigate both leakage power and short-circuit power, crucial concerns particularly at lower technology nodes. the iclrt technique is harnessed for designing various logic gates, enabling the attainment of full output voltage swing while consuming considerably less power compared to the existing state-of-the-art designs examined in the article. the design of xor/xnor gate with iclrt technique is shown in fig. 1 (f). (a) (b) (c) exploring supply voltage and temperature variation on xor-xnor cells with … 305 (d) (e) (f) fig. 1 static xor/xnor cell designs (a)radhakrishnan[23] (b)kandpal [2] (c) goel [3] (d) kandpal [28] (e) naseri[5] (f) moradi [22] 306 u. sharma, m. jhamb 2.2. dynamic xor/xnor cell the fig.2 illustrated a fundamental n-type dynamic cmos logic circuit [29] consists of key components: a precharge transistor (mp), an evaluation transistor (me), and an nmos logic block. the nmos logic block is dedicated to realizing a boolean function, and the circuit's effective functioning relies on the presence of a clock signal, essential for the operation of both the precharge and evaluation transistors. fig. 2 structure of dynamic logic [29] during the precharge phase, when the clock signal is low, mp becomes active while me is inactive. this configuration results in the o/p carrying the voltage vdd. in the evaluation phase, when the clock signal is high, mp deactivates and me becomes operational. the state of o/p whether it retains the voltage vdd or links to the ground depends on the input conditions within the nmos logic block. (a) (b) fig. 3 (a) xnor using dynamic logic [29] (b) xor using dynamic logic [29] in the proposed xor and xnor gate design [29], the output node consistently achieves a full voltage swing across all input combinations of a and b. this implementation of dynamic xor and xnor gate is shown in fig. 3successfully mitigates the threshold loss problem and offers easy cascading ability within low-power supply circuits. exploring supply voltage and temperature variation on xor-xnor cells with … 307 2.3. domino xor/xnor cell chip space utilization is a significant concern in static cmos design methods. consequently, dynamic logic styles emerged as an alternative to minimize transistor count, albeit with increased switching power dissipation compared to static designs. domino logic, which combines dynamic and static logic and provides a viable solution to these issues, is a crucial advancement in the development of electronic circuit technology [7 &16]. in this article [16], a new design for the domino xor/xnor cell is introduced and shown in fig. 4(a). this design reconstructs the traditional domino xor/xnor cell by combining ptl and cmos circuits. as a result, it reduces the number of mosfets compared to the conventional design, consequently lowering the gate's power consumption and power-delay product (pdp) by 18% and 6% respectively. however, this enhancement leads to a 14% increase in the gate's delay. the design presented in reference [7] integrates dynamic logic and a grounded keeper with an inverted output as shown in fig.4(b). it exhibits a 5.341ps delay, consuming only 0.314µw power, and achieving a power delay product of 1.675aj. notably, this design successfully resolves the charge sharing issue commonly associated with dynamic logic styles. simulated at a nominal vdd of 0.7v using the hspice simulator at the 22nm node, this proposed design for the proficient xnor/xnor cell demonstrates superior performance. (a) (b) fig. 4 domino logic xor/xnor implementation (a) [16] (b) [7] non-conventional design methods and devices have a substantial impact on digital circuit design, especially at lower technology nodes. within the literature, multiple xor/xnor cell designs [8, 16-21, & 30] have been introduced, employing non-conventional approaches rather than the conventional cmos technology. this discussion encompasses the implementations of xor/xnor using these un-conventional technologies. 308 u. sharma, m. jhamb 2.4. fgmos implementation the foundation of many digital systems, like arithmetic units and error detection circuits, relies on xor/xnor operations. this innovative design integrates fgmos technology to elevate the performance of these crucial operations. fgmos devices bring forth enhanced linearity and improved voltage transfer properties, resulting in increased speed and precision when executing xor/xnor operations. fig. 5 xor gate with fgmos technique [8] utilizing fgmos in the design of xor gates [8] leads to a decrease in both transistors count and power consumption. the design is comprised of two pmos transistors utilized in a ptl logic style. fig. 6 fgmos based xor/xnor cell additionally, one 2-input fgmos transistor is coupled between the output terminal and ground to ensure a full swing undistorted output. this particular xor cell design necessitates fewer transistors when compared to the standard cmos-based implementation. fgmos based xor/xnor cell is depicted in fig.6, which is implemented by adding one static inverter at the output node of xor cell discussed in [8]. exploring supply voltage and temperature variation on xor-xnor cells with … 309 2.5. cnfet implementation mcml (mos current-mode logic) has emerged as a logic style capable of achieving significantly higher speeds while consuming less power than traditional cmos circuits, especially at high frequencies [17]. cnfet is recognized for its superior device current carrying capacity. the pivotal aspect driving the adoption of cnfet is its device structure and operational principles, which closely resemble those of cmos devices. consequently, it allows for the potential reuse of established and existing cmos infrastructure [31, 32]. in reference [17], the author achieves an xor/xnor circuit implementation using cnfets. the cnfet-based mcml xor/xnor circuit demonstrates superior design parameters contrasted to the mosfet-based mcml xor/xnor circuit at nominal vdd. therefore, among electronic devices in the nanoscale realm, cnfet stands out as a promising candidate. this is primarily attributed to its improved electronic characteristics and notable speed enhancements. the acceleration in speed, particularly due to scaling down to 22-nm and 10-nm technology nodes, has fuelled the advancement of cnfet technology. the author introduced cnfet based simultaneous non-full-swing and full-swing xor/xnor gates utilizing ptl technology [20]. fig. 7 xor /xnor implementation using cnfet [17] these designs exhibit increased power consumption due to feedback usage and the additional inverter employed for the simultaneous production of xor/xnor output. moreover, the author suggested p1-x and p2-x xor/xnor cell designs to execute 4-2 and 5-2 compressors. when compared to the top existing designs, the proposed xor/xnor cell demonstrates a reduction in pdp by up to 86.3%. furthermore, these recommended designs display enhanced reliability in managing temperature, voltage, and process fluctuations [20].cnfet-xor/xnor gates were assembled in sr-cpl (swing restored cpl) logic within this paper, employing powerless and groundless pass-transistor configurations [33].the authors in research article [34] present diverse xor/xnor gate designs employing multiple logic paradigms implemented through cmos, finfet, and cnfet technologies. upon comparison, it is concluded that among these three technologies, cnfet technology delivers the most optimal performance in terms of average delay, power consumption, and pdp [34]. 310 u. sharma, m. jhamb 2.6. finfet implementation in the nanometer range, short channel mosfet devices encounter several impacts including punch-through, hot carrier impact, drain-induced hurdle lowering, and limited mobility leading to performance degradation. to address these challenges, finfet technology emerges as a promising solution to improve the efficiency of low-power devices operating at low voltages. fig.8 (a) demonstrates the structure of a finfet, characterized by its threedimensional configuration, with elevated source and drain areas and gates encompassing the channel region [35]. compared to alternative technologies, finfets offer advantages in power efficiency, propagation delay, fan-in and fan-out capabilities [36].simulating a finfet device poses greater challenges. accurately extracting parasitic elements from finfets proves to be considerably more challenging. creating precise simulation spice models for finfets is notably more arduous compared to planar technologies [37]. moreover, the dissipation of heat is less efficient in finfet design due to the fins' tendency to retain heat [38]. (a) (b) fig. 8 (a) finfet structure (b) finfet implementation of xor gate [19] fig. 9 finfet based xor/xnor cell the utilization of finfet technology for implementing the xor gate is illustrated in fig. 8 (b) [19]. assessing the variability of energy-delay product (edp) is also conducted to exhibit the design's robustness, considering edp's significance as a crucial circuit metric [19]. utilizing finfets allows for a reduction in transistor count in multi-input logic circuits. an innovative proposal introduces a 4-bit xor/xnor cell employing a ptl design style [39]. this design, based on 20 nm finfet technology, demonstrates favourable outcomes in terms of chip area, signal propagation latency, output swift, and ability to drive exploring supply voltage and temperature variation on xor-xnor cells with … 311 current. furthermore, a 45 nm ptlxor/xnor architecture using finfet with a 0.7 v supply voltage is recommended, showcasing notably lower power consumption owing to the author's use of a low supply voltage [40]. 3. optimal selection of xor/xnor cell design a detailed discussion of various conventional and non-conventional design methodologies for the designing of xor/xnor cell is performed in section 2. this research article provides an in-depth understanding of the importance of each technology. to find the optimal selection of xor/xnor cell a comparative analysis has been carried out in this section. the performance of these circuits has been compared on the bases of circuit design parameters. table 1 shows the simulation results of various xor/xnor cell implementations in terms of circuit design parameters. the simulation results for xor/xnor cells referenced in [2], [7], [15], [17], and [23] have been obtained from the research article [9]. in contrast, simulations were conducted independently for the xor/xnor cell depicted in fig. 6 and fig. 9 in the current research. these simulations were conducted on hspice tool at 22nm technology node with 0.7v supply. the table 1 presents evidence that cnfet technology outperforms other design methodologies in terms of speed, achieving a remarkably low delay of 2.27ps. it is evident that cntfet technology, with its ballistic carrier transport, proves suitable for high-speed applications. table 1 summary of xor/xnor cell design parameters ref. technology used delay (ps) pwr (µw) pdp (aj) edp (aj-ps) transistor count [28] static cmos 14.42 2.105 30.3541 437.7061 10 [25] 22.01 2.68 58.9868 1298.299 10 [2] 14.86 2.169 32.23 478.95 10 [23] 32.64 2.65 86.5 2823.2 6 [7] domino cmos 5.341 0.314 1.675 8.946 9 [15] 50.11 0.477 23.9 1197.75 15 [16] 15.94 7.23 115.23 1837.02 8 p3-s[20] cnfet 35.21 0.059 2.07739 73.1449 8 p4-s[20] 32.47 0.0611 1.983917 64.41778 10 [17] 2.27 44.2 100.5 228.6 10 design in fig.9 finfet 14.23 0.0049 0.0697 0.992 6 design in fig.6 fgmos 12.73 0.004 0.0509 0.649 5 additionally, it's noticeable that domino logic operates at a higher speed compared to the static logic style. the comparative analysis showcased that the domino logic approach outperforms static logic due to its reduced transistor count, yet it's affected by a charge sharing issue between nodes, impacting its performance. the data in the table indicates that fgmos technology consumes the least power (4.001 nw) in terms of the circuit's power consumption. furthermore, the data clearly shows that unique devices (like cnfet or finfet) or unconventional design strategies (like fgmos) produce higher outcomes across all design metrics for lower technology nodes. fgmos technology, on the other hand, is well suited for low voltage and low power applications since it provides threshold tunability and numerous input possibilities. therefore, it is crucial to determine which design approach is 312 u. sharma, m. jhamb best for the given application. pdp is indeed an important figure of merit for any digital circuits. utilizing the pdp results from table 1, a bar chart is shown in fig.10 to visually represent a fair comparison among distinct design methodologies for xor/xnor cells. this graphical representation enhances the understanding of the comparative efficiency in terms of power consumption and speed across the various design approaches. the bar chart makes it clear that static cmos technology has a much higher pdp than alternative design methods such as cnfet, finfet, and fgmos in this comparison. these findings are specific to the 22 nm technology node. in the conventional designs of xor/xnor cells, we have adopted the practice of using the minimum transistor size. specifically, for nmos transistors, the width-to-length ratio (w/l) is set to 1, while for pmos transistors, the w/l ratio is considered as 2.5. for cnfet designs, each device is characterized by four tubes, and the chirality of the tube is specified as (19,0). these parameters have been carefully selected to ensure a consistent and standardized approach in our comparative analysis. fig. 10 pdp comparison hence, it is recommended that non-conventional design methods offer advantages at lower technological node for low voltage and low power applications. 4. analysis of voltage and temperature variations for conventional and non-conventional xor/xnor cell designs the impact of supply voltage and temperature fluctuations on conventional and unconventional xor/xnor cell has been examined in this section. given the prominence of variability in deep submicron technology, the analysis of pdp variability is conducted using monte carlo (mc) simulations, representing a crucial aspect in design metrics. in this study, the design metrics are assessed with a sample size of 2000 to attain an even greater level of accuracy. moreover, the influence of voltage fluctuations on pdp has been examined for various supply voltages. it's anticipated that in the near future, the potential variance in supply voltage might be around 10% [41]. consequently, the variability is assessed by adjusting the supply voltage within the range of 0.6v to 1v. the simulation results for the voltage variations are shown in table 2. exploring supply voltage and temperature variation on xor-xnor cells with … 313 table 2 simulation results for supply voltage variation supply voltage (v) pdp (aj) [15] [22] [20] [21] [7] [19] fgmos 0.6 22.32 4.8 2.2 1.78 1.55 0.51 0.049 0.7 23.58 5.02 2.52 1.872 1.67 0.67 0.0509 0.8 23.9 7.02 2.83 1.988 1.786 0.78 0.061 0.9 26.04 13.34 2.95 2.106 1.98 0.98 0.0731 1 29.13 27.04 3.123 2.232 2.1 1.005 0.0798 the bar graph displayed in fig. 11 distinctly illustrates that the fgmos based xor cell exhibit minimum variation against this voltage range. fig. 11 voltage resilience analysis evaluating the resilience of the proposed design, assessments for both temperature and voltage variability have been conducted. the impact of temperature-related variations on all design metric (pdp) has been thoroughly investigated across a range from -20°c to 100°c. the simulation results demonstrate minimal variations for the fgmos based xor/xnor cell design across this extensive temperature spectrum, the same is shown in fig.12. fig. 12 temperature resilience analysis 0 5 10 15 20 25 30 35 0.6 0.7 0.8 0.9 1 p d p ( aj ) supply voltage(v) [15] [22] [20] [21] [7] [19] fgmos [8] 0 10 20 30 40 -20 0 20 40 60 80 100 p d p (a j) temperature (˚c) [15] [22] [20] [21] [7] [19] fgmos [8] 314 u. sharma, m. jhamb 5. conclusion & future scope in this research work, xor-xnor cells which are essential in a variety of excellent performance arithmetic logical algorithms in lplv vlsi architectures are thoroughly examined using both traditional and non-conventional design methodologies. while finfet, cnfet, and fgmos are regarded as non-traditional design techniques, static and dynamic cmos technologies are considered conventional design approaches. the study compares different xor/xnor cells reported in the literature in terms of circuit design characteristics and discusses the difficulties posed by these methods. findings show that while fgmos technology excels in power efficiency, utilizing cntfet technology at lower technological nodes considerably enhances circuit speed. the hspice tool at the 22nm technology node is used in the paper to assess the voltage and temperature resilience of these xor/xnor cells using the predictive technology model (ptm) [42]. it is observed that the xor/xnor cell based on fgmos displays the highest robustness to voltage and temperature fluctuations. the adoption of non-conventional technologies is hindered by the absence of appropriate simulation models and the intricacy of fabrication processes. therefore, there is a pressing need to focus on developing additional simulation tools and simplifying the complexity associated with these innovative technologies. references [1] r. zimmermann and w. fichtner, "low-power logic styles: cmos versus pass-transistor logic", ieee journal of solid-state circuits, vol. 32, no. 7, pp. 1079–1090, 1997. [2] j. kandpal, a. tomar, m. agarwal and k. k. sharma, "high-speed hybrid-logic full adder using highperformance 10-t xor–xnor cell", ieee transactions on very large-scale integration (vlsi) systems, vol. 28, no. 6, pp. 1413–1422, 2020. [3] s. goel, a. kumar and m. a. bayoumi, "design of robust, energy-efficient full adders for deepsubmicrometer design using hybrid-cmos logic style", ieee transactions on very large-scale integration (vlsi) systems, vol. 14, no. 12, pp. 1309–1321, 2006. [4] c.h. chang, j. gu and m. zhang, "a review of 0.18-/spl mu/m full adder performances for tree structured arithmetic circuits", ieee transactions on very large scale integration (vlsi) systems, vol. 13, no. 6, pp. 686–695, 2005. [5] h. naseri and s. timarchi, "low-power and fast full adder by exploring new xor and xnor gates", ieee transactions on very large-scale integration (vlsi) systems, vol. 26, no. 8, pp. 1481–1493, 2018. [6] u. sharma and m. jhamb, "a 0.7 v 0.144 µw frequency divider design with cntfet-based master slave d-flip flop", lecture notes in electrical engineering, pp. 387–395, 2021. [7] u. sharma and m. jhamb, "a novel design of voltage and temperature resilient 9-t domino logic xor /xnor cell", circuits, systems, and signal processing, vol. 41, no. 11, pp. 6314–6332, 2022. [8] u. sharma and m. jhamb, "efficient design of fgmos-based low-power low-voltage xor gate", circuits syst signal process, vol. 42, pp. 2852–2871 (2023). [9] u. sharma and m. jhamb, "design-space exploration of conventional/non-conventional techniques for xor/xnor cell" in: lenka, t.r., saha, s.k., fu, l. (eds) micro and nanoelectronics devices, circuits and systems. mndcs 2023. lecture notes in electrical engineering, vol 1067. springer, singapore. [10] m. gupta, r. srivastava, and u. singh, "low-voltage low-power fgmos based vdiba and its application as universal filter", microelectronics journal, vol. 46, pp. 125–134, 2015. [11] r. gupta, r. gupta and s. sharma, "a high-speed, low-power, and area-efficient fgmos-based full adder", iete journal of research, 2019. [12] m. kumngern, f. khateb, t. kulej, "bulk-driven fully balanced second-generation current conveyor in 0.18 µm cmos", international journal of electronics and communications (aeü), vol. 104, pp. 66–75, 2019. [13] m. kumngern, f. khateb, t. kulej, "extremely low-voltage low-power differential difference current conveyor using multiple-input bulk-driven technique", international journal of electronics and communications, vol. 123, august 2020. [14] m. bchir, i. aloui, n.hassen, "a bulk-driven quasi-floating gate fvf current mirror for low voltage, low power applications", integration, the vlsi journal, vol. 74, pp. 45–54, 2020. exploring supply voltage and temperature variation on xor-xnor cells with … 315 [15] s. garg, t. k. gupta. "low power domino logic circuits in deep-submicron technology using cmos. engineering science and technology", an international journal, vol. 21, no. 4, pp. 625–638 [16] m. hajiqasemi, h. beitollahi, "a novel design of domino xor gate", in the proceedings of the 25th international computer conference, computer society of iran (csicc), jan 2020. [17] p. srivastava and a. islam. "cnfet-based design of resilient mcml xor/xnor circuit at 16-nm technology node". indian journal of engineering and materials sciences, vol. 22, no. 3, 261–267, 2015. [18] a. islam, a. imran and m. hasan, "variability analysis and finfet-based design of xor and xnor circuit", in the proceedings of the 2nd international conference on computer and communication technology (iccct-2011). [19] p. srivastava, a. k. dwivedi and a. islam, "power and variability-aware design of finfet-based xor circuit at nanoscale regime," in the proceedings of the 2014 ieee international conference on advanced communications, control and computing technologies, ramanathapuram, india, 2014, pp. 440–444. [20] e. tavakkoli and m. aminian, "design and analysis of energy‐efficient compressors based on low‐power xor gates in carbon nanotube technology", iet circuits, devices & systems, vol. 16, no. 3, pp. 240–256. [21] s. hatefinasab, "cntfet-based design of a high-efficient full adder using xor logic", journal of nano and electronic physics, 2016. [22] m. moradi, m. amini-valashani and s. j. azhari, "a new circuit level technique for leakage and short circuit power reduction of static logic gates in 22 nm cmos technology", circuits, systems and signal processing, vol. 40, pp. 3536–3560, 2021. [23] d. radhakrishnan, "low-voltage low-power cmos full adder", iee proc.-circuits, devices syst., vol. 148, no. 1, pp. 19–24, feb. 2001. [24] m. a. valashani and s. mirzakuchaki, "a novel fast, low-power and high-performance xor-xnor cell", in proceedings of the ieee int. symp. circuits syst. (iscas), may 2016, pp. 694–697. [25] m. amini-valashani, majid, m. ayat, s. mirzakuchaki, "design and analysis of a novel low-power and energy-efficient 18t hybrid full adder", microelectron. journal, vol. 74, pp. 49–59, 2018. [26] j. m. wang, s. c. fang and w. s. feng, "new efficient designs for xor and xnor functions on the transistor level", ieee journal of solid-state circuits, vol. 29, no. 7, pp. 780–786, july 1994. [27] a. shams, t. darwish, and m. bayoumi, "performance analysis of lowpower 1-bit cmos full adder cells", ieee transactions on very large scale integration (vlsi) systems, vol. 20, no. 7, pp. 20–29, july 2002. [28] j. kandpal, a. tomar and m. agarwal, "design and implementation of 20-t hybrid full adder for highperformance arithmetic applications", microelectronics journal, vol. 115, p. 105205. [29] s. akhter and s. chaturvedi, "a high speed 14 transistor full adder cell using novel 4 transistor xor/xnor gates based on dynamic cmos logic", international journal of applied engineering research, vol. 9, no. 11, pp. 1551–1564, 2014. [30] a. khan and s. wairya, "performance evaluation of highly efficient xor and xor-xnor topologies using cntfet for nano-computation", international journal of computing and digital systems, vol. 12, no. 1, pp. 225–236, 2022. [31] j.k. saini, a. srinivasulu and r. kumawat, "fast and energy efficient full adder circuit using 14 cnfets", solid state electronics letters, vol. 2, pp. 67–78, 2020. [32] p. prakash, k. mohana sundaram and m. anto bennet, "a review on carbon nanotube field effect transistors for ultra-low power applications", renewable and sustainable energy reviews, vol. 89, pp. 194–203, 2018. [33] m. aguirre-hernandez and m. linares-aranda, "cmos full-adders for energy-efficient arithmetic applications," ieee transactions on very large scale integration (vlsi) systems, vol. 19, no. 4, pp. 718– 721, april 2011. [34] g. sasi, g. athisha, s. surya prakash, "performance comparison for ripple carry adder using various logic design", int. j. innovative technol. explor. engineering, vol. 8, no. 4s2, march 2019. [35] a. k. kuna, k. kandpal and k. b. r. teja, "an investigation of finfet based digital circuits for low power applications," in proceedings of the 2017 international conference on circuit ,power and computing technologies (iccpct), kollam, india, 2017, pp. 1–6. [36] s. k. saha, "overview of finfet device technology", finfet devices for vlsi circuits and systems, pp. 133–150, 2020. [37] m. rostami and k. mohanram, "dual-vth independent-gate finfets for low power logic circuits", ieee transactions on computer-aided design of integrated circuits and systems, vol. 30, no. 3, pp. 337– 349, march 2011. [38] h. lee et al., "sub-5nm all-around gate finfet for ultimate scaling," in proceedings of the 2006 symposium on vlsi technology, 2006. digest of technical papers., honolulu, hi, usa, 2006, pp. 58–59. [39] s. musala and a. srinivasulu, "finfet based 4-bit input xor/xnor logic circuit," in proceedings of the 2016 international conference on applied electronics (ae), pilsen, czech republic, 2016, pp. 219–222. 316 u. sharma, m. jhamb [40] n. yadav, s. khandelwal and s. akashe, "design and analysis of finfet pass transistor based xor and xnor circuits at 45 nm technology," in proceedings of the 2013 international conference on control, computing, communication and materials (iccccm), allahabad, india, 2013, pp. 1–5. [41] m. alioto, g. palumbo and m. pennisi, "understanding the effect of process variations on the delay of static and domino logic," ieee transactions on very large scale integration (vlsi) systems, vol. 18, no. 5, pp. 697–710, may 2010. [42] nanoscale integration and modeling (nimo) group, arizona state university (asu), "predictive technology model (ptm)," [online]. available: https://ptm.asu.edu/. instruction facta universitatis series: electronics and energetics vol. 30, no 3, september 2017, pp. 375 382 doi: 10.2298/fuee1703375d mixed mode performance of gaas utb-mosfet with extra insulator region and undoped buried oxide region  shiva prasad das 1 , ananya dastidar 2 , partha sarkar 1 , sushanta k. mohapatra 3 1 department of electronics and communication engineering, centre for advanced post graduate studies, biju patnaik university of technology, odisha, india 2 department of instrumentation and electronics, college of engineering and technology, bhubaneswar, bput, odisha, india 3 school of electronics engineering, kiit university, bhubaneswar, odisha, india abstract. investigation of mixed mode performances for gaas utb-mosfet at nanoscale regime keeping in view of “beyond cmos” is the current trend of semiconductor industry. here it is proposed to modify conventional models by considering an extra insulator region (ir) and undoped buried oxide region (ubr) to study the performance related to digital and analog/rf applications. here a gaas is considered as the channel material. the irutb-soi-n-mosfet has shown promising results with respect to ss, dibl, ft and switching speed. key words: silicon-on-insulator, utb mosfet, gaas, dibl, analog/rf performance, insulator region. 1. introduction in recent years, there has been a growing demand of integrated circuits (ics) providing better analog/ rf applications as well as digital functionalities [1]–[3]. the silicon-oninsulator (soi) technology [1], [4], [5] based fully depleted (fd) silicon on insulator mosfets are widely used for mixed mode application ics as it offers sharp sub-threshold slope, high current drive, high transconductance, reduced parasitic capacitance, and absence of latch-up which are key parameters for digital applications [6]–[8]. due to high transconductance to drain current (gm/id) ratio and low body factor, the fd-soi-mosfets have been used to design low power circuits to operate at a high and low frequency as received september 17, 2016; received in revised form november 30, 2016 corresponding author: sushanta k. mohapatra school of electronics engineering, kiit university, bhubaneswar, odisha, india (e-mail: skmctc74@gmail.com) 376 s. p. das, a. dastidar, p. sarkar, s. k. mohapatra well as high temperature providing better performance than the conventional mosfets [9], [10]. the use of high electron mobility material like gaas is promising as it has higher saturated electron velocity, higher electron mobility, allowing it to function at much higher frequencies, less noise and be operated at higher power levels than silicon [11], [12]. previously it has been shown by orouji et al. [13] that soi-mosfets with an extra insulator region (ir-soi) in which the silicon active layer and drain region consists of an insulator region (hfo2) provides high electron reliability due to low gate leakage current and low critical electric field. the self heating effect (she) which is one of the drawbacks of fd-soi has been reduced by a new structure undoped buried region mosfet (ubrmosfet) [14]. in this paper, the analog/ rf performance along with some scaling parameters of ultra thin body (utb) soi n-channel mosfet (utb-soi-n-mosfet) has been examined along with utb-soi-mosfet with extra insulator region (ir-utb-soi-n-mosfet), utb-n-mosfet with undoped buried region under channel (ubr-utb-soi-n-mosfet) and a new structure utb-soi-n-mosfet with extra insulator region and undoped buried region under channel (ir-ubr-utb-soi-n-mosfet) with the help of the device simulator from silvaco tcad[15]. 2. device structure and simulation setup the schematic representation of four different structures utb-soi-n-mosfet, irutb-soi-n-mosfet, ubr-utb-soi-n-mosfet and ir-ubr-utb-soi-n-mosfet, which was considered for the 2-d simulation is given in fig.1. the effective oxide thickness (eot), the gate length (lg), the gaas body thickness (tgaas), the sio2 buried oxide thickness (tbox) and si substrate thickness (tsub) have been taken of 1.1 nm, 60 nm, 10 nm, 50 nm and 100 nm respectively in all the four type of structures. the source extension (ls) and the drain extension (ls) have been taken as 70 nm each. the source and drain area are highly doped with n-type donor ions with concentration 10 20 /cm 3 each to reduce the mobility degradation due to coulombs scattering. the silicon substrate is diffused with p-type acceptor ions with concentration 10 18 /cm 3 and the gaas channel region is doped with p-type acceptor ions with concentration 10 16 /cm 3 to avoid threshold voltage variation[16]. the metal gate work function is set to 4.6 ev during simulation[17]. the structures are calibrated to meet the requirement of international technology roadmap for semiconductors (itrs) in 45 nm technology node [18]. the 2-d numerical device simulator [15] atlas is used for the simulation of the proposed structures. the drain bias is fixed to vdd =1.0 v as per itrs [19]. to study the analog/ rf performance the simulation is carried out at the drain to source voltage vds = 0.5 v (half of the supply voltage i.e. vdd/2) [20] with a variable gate to source voltage (vgs) 0 v to 1.0 v. the threshold voltage is obtained by using constant current id =10 -6 a/µm, from id~vgs characteristic curve. in the channel region the electron and hole shockley-read-hall [21],[22] generation and recombination lifetime, τn and τp are set to the value 1×10 -8 sec each. in material models, lombardi mobility model [23] is used which considers the effect of transverse electric fields along with doping and temperature dependent parameters gaas utb-mosfet with extra insulator region 377 of mobility [24]. the numerical solution used here is based on the drift-diffusion approach [25]. some other material models have also been used here like the concentration dependent (conmob), parallel electric field dependence (fldmob) which is required for measuring velocity saturation effect, shockley-read-hall (srh) and optical [15]. the fermi-dirac model helps to get the result close to ideal values by a rational chebyshev approximation [19]. (a) (b) tgaas tbox tsub lc ls ld source gate drain substrate lc ubr (c) (d) fig. 1 schematic device structures (a) utb-soi-n-mosfet (b) ir-utb-soi-n-mosfet (c) ubr-utb-soi-n-mosfet (d) ir-ubr-soi-n-mosfet table 1 structure notation notation used in this article structure a utb-soi-n-mosfet b ir-utb-soi-n-mosfet c ubr-utb-soi-n-mosfet d ir-ubr-utb-soi-n-mosfet 378 s. p. das, a. dastidar, p. sarkar, s. k. mohapatra 3. result analysis as described previously these four types of structures were simulated using 2-d numerical device simulator and the parameters like the on-state drive current (ion), off-state leakage current (ioff), ion/ioff ratio, threshold voltage (vth) and power dissipation variation were evaluated which are some of the factors affecting the scaling properties of the devices. the surface potential variation with respect to channel length was also observed. the rf/ analog performance analysis was done by measuring the parameters like transconductance (gm), total capacitance (ctotal), q-factor and cut-off frequencies (ft) for the four different structures. a sub-threshold slope (ss) was calculated by using the following equation [19]. ( / ) (log ) gs d v ss mv dec i    (1) another vital parameter responsible for scaling effect is the drain induced barrier lowering (dibl) which was also evaluated by the following equation[26]. (a) (b) fig. 2 surface potential variation along channel for a, b, c and d at vgs = 1 v (a) at vds = 0.05 v (b) at vds = 1 v (a) (b) fig. 3 ion and ioff comparison for a, b, c and d (a) at vds = 0.05 v (b) at vds = 1 v gaas utb-mosfet with extra insulator region 379 1 2 0.95 th thv v dibl   (2) where vth1 and vth2 are threshold voltages at vds = 0.05 v and vds = 1 v. fig.2 shows the surface potential variation along the channel of the structures a, b, c and d, where fig. 2 (a) shows the variation of surface potential along the channel for the four structures at drain to source voltage vds = 0.05 v and fig. 2 (b) shows the surface potential variation along the channel for the four structures when vds = 1 v. the trade-off between ioff and ion has been shown in the fig. 3 for different structures. fig. 3(a) shows the ion and ioff comparison between a, b, c and d at vds = 0.05 v and fig. 3(b) shows the ion and ioff comparison between a, b, c and d at vds = 1 v. at vds = 0.05 v structure c gives better ion/ioff ratio and at vds = 1 v, structure b shows significant improvement in ion/ioff ratio. (a) (b) fig. 4 (a) static power dissipation for a, b, c, and d, (b) threshold voltage variation at vds = 0.05 v and vds =1 v in the fig. 4(a), the static power dissipation (pd = ioff x vdd) [27] variation with respect to the four type of structures is presented. the structure b provides lower static power dissipation than the other three structures. the fig. 4(b) provides the threshold voltage variation of the four structures at vds = 0.05 and vds = 1 v. the extracted value of threshold voltage, sub-threshold slope, dibl and static power dissipation are tabulated for all device structures in table 2. in fig. 5, the trans-conductance i.e. d m gs i g v    (3) for different a, b, c and d has been given. the fig. 5(a) and fig. 5(b) show the gm variation with id for the given four structures at vds = 0.05 v and vds = 1 v respectively. 380 s. p. das, a. dastidar, p. sarkar, s. k. mohapatra (a) (b) fig. 5 trans-conductance (gm) variation with id for a, b, c and d (a) at vds = 0.05 v (b) at vds =1 v (a) (b) fig. 6 (a) total capacitance (ctotal) with id for a, b, c and d at vds =1 v (b) a cut-off frequency (ft) variation with id for a, b, c and d at vds =1 v in fig. 6(a), the variation of total capacitance (ctotal = cgd + cgs ) for a, b, c and d has been given at vds = 1 v where cgd is parasitic gate to drain capacitance and cgs is the parasitic gate to source capacitance. another important parameter, a cutoff frequency (ft) has been plotted in fig. 6(b) 2 ( ) m t gs gd g f c c   (4) the q-factor (gm/ss) has been calculated for the four device structures and given in the table 3. gaas utb-mosfet with extra insulator region 381 table 2 performance parameters-1 structure vth1 (v) vth2 (v) ss1 (mv/dec) ss2 (mv/dec) dibl (mv/v) pd (x10-12 w) a 0.420 0.403 69.81 71.95 17.678 1.92 b 0.420 0.404 69.68 71.83 17.589 1.82 c 0.505 0.436 74.11 82.21 72.923 6.55 d 0.505 0.437 74.01 81.90 71.872 6.04 table 3 performance parameters-2 structure ion1/ioff1 (x10-9) ion2/ioff2 (x10-8) ctotal (ff/µm) ft (x10-11 hz) q-factor a 1.686 3.920 1.639 2.00 24.21 b 0.681 4.132 1.655 2.03 9.32 c 2.095 1.034 1.629 2.00 23.07 d 0.773 1.120 1.639 2.03 7.68 4. conclusions a comparative performance analysis of a new structure was presented namely a irubr-utb-soi-n-mosfet which contains an extra insulator region (ir) at the channel source junction, undoped buried region and having a gaas under the channel region. the scaling and rf parameters of ir-ubr-utb-soi-n-mosfet have been obtained along with conventional utb-soi-n-mosfet. from the analysis, it has been obtained that the sub-threshold slope, dibl, and the static power dissipation are lower for irutb-soi-n-mosfet than the other three structures and it also provides better ion /ioff ratio. so the above structural change in the device can be a good candidate for switching and low standby operating power application. references [1] s. cristoloveanu, “silicon on insulator technologies and devices: from present to future,” solid. state. electron., vol. 45, no. 8, pp. 1403–1411, 2001. [2] m. a. pavanello, j. a. martino, v. dessard, and d. flandre, “analog performance and application of graded-channel fully depleted soi mosfets,” solid. state. electron., vol. 44, no. 7, pp. 1219–1222, 2000. [3] k. kim, “1.1 silicon technologies and solutions for the data-driven world,” in digest of technical papers 2015 ieee international solid-state circuits conference-(isscc), 2015, pp. 1–7. [4] j.-t. park and j.-p. colinge, “multiple-gate soi mosfets: device design guidelines,” electron devices, ieee trans., vol. 49, no. 12, pp. 2222–2229, 2002. [5] a. chaudhry and m. j. kumar, “investigation of the novel attributes of a fully depleted dual-material gate soi mosfet,” electron devices, ieee trans., vol. 51, no. 9, pp. 1463–1467, 2004. [6] s. cristoloveanu and s. li, electrical characterization of silicon-on-insulator materials and devices, vol. 305. springer science & business media, 2013. [7] b. vandana, “study of floating body effect in soi technology,” int. j. mod. eng. res., vol. 3, no. june, pp. 1817–1824, 2013. [8] s. k. mohapatra, k. p. pradhan, and p. k. sahu, “ztc bias point of advanced fin based device: the importance and exploration,” facta univiversitatis: series, electronics and energetics, vol. 28, no. 3, pp. 393–405, 2015. [9] q. xie, c.-j. lee, j. xu, c. wann, j. y.-c. sun, and y. taur, “comprehensive analysis of short-channel effects in ultrathin soi mosfets,” electron devices, ieee trans., vol. 60, no. 6, pp. 1814–1819, 2013. [10] h.-s. wong, “beyond the conventional transistor,” ibm j. res. dev., vol. 46, no. 2.3, pp. 133–168, 2002. 382 s. p. das, a. dastidar, p. sarkar, s. k. mohapatra [11] r. h. reuss et al., “macroelectronics: perspectives on technology and applications,” proc. ieee, vol. 93, no. 7, pp. 1239–1256, 2005. [12] j. yoon et al., “gaas photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies,” nature, vol. 465, no. 7296, pp. 329–333, 2010. [13] a. a. orouji and m. k. anvarifard, “soi mosfet with an insulator region (ir-soi): a novel device for reliable nanoscale cmos circuits,” mater. sci. eng. b, pp. 1–7, 2013. [14] m. rahimian and a. a. orouji, “a novel nanoscale mosfet with modified buried layer for improving of ac performance and self-heating effect,” mater. sci. semicond. process., vol. 15, no. 4, pp. 445–454, 2012. [15] atlas user manual. silvaco international,santa clara, 2012. [16] h. a. el hamid, j. r. guitart, and b. iñíguez, “two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate mosfets,” electron devices, ieee trans., vol. 54(6), p. 1402–1408., 2007. [17] j. p. colinge, “multiple-gate soi mosfets,” solid state electron, vol. 48 (6), pp. 897–905, 2004. [18] “the international technology roadmap for semiconductors,” 2011. [19] s. k. mohapatra, k. p. pradhan, and p. k. sahu, “temperature dependence inflection point in ultra-thin si directly on insulator (sdoi) mosfets: an influence to key performance metrics,” superlattices microstruct., vol. 78, pp. 134–143, 2015. [20] s. chakraborty, a. mallik, and c. k. sarkar, “subthreshold performance of dual-material gate cmos devices and circuits for ultralow power analog/mixed-signal applications,” electron devices, ieee trans., vol. 55 (3), pp. 827–832, 2008. [21] w. shockley and w. t. read, “statistics of the recombination of holes and electrons,” phys. rev., vol. 87, pp. 835–842, 1952. [22] r. n. hall, “electron–hole recombination in germanium,” phys. rev., vol. phys. rev., p. 387, 1952. [23] c. lombardi, s. manzini, a. saporito, and m. vanzi, “a physically based mobility model for numerical simulation of nonplanar devices,” ieee trans. comput. des. integr. circ. syst., vol. 7 (11), pp. 1164– 1171, 1988. [24] p. k. sahu, s. k. mohapatra, and k. p. pradhan, “zero temperature-coefficient bias point over wide range of temperatures for singleand double-gate utb-soi n-mosfets with trapped charges,” mater. sci. semicond. process., vol. 31, pp. 175–183, 2015. [25] s. selberherr, “analysis and simulation of semiconductor devices,” springer–verlag, wien–newyork, 1984. [26] g. c. patil and s. qureshi, “impact of segregation layer on scalability and analog / rf performance of nanoscale schottky barrier,” j. semicond. technol. sci., vol. 12, no. 1, pp. 66–74, 2012. [27] k. p. pradhan, d. singh, s. k. mohapatra, and p. k. sahu, “assessment of iii-v finfets at 20 nm node: a process variation analysis,” procedia comput. sci., vol. 57, pp. 454–459, 2015. facta universitatis series: electronics and energetics vol. 34, no 3, september 2021, pp. 393-400 https://doi.org/10.2298/fuee2103393v © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper controlled electron leakage in electron blocking layer free ingan/gan nanowire light-emitting diodes ravi teja velpula1, barsha jain1, trupti ranjan lenka2, hieu pham trung nguyen1 1new jersey institute of technology, university heights, newark, nj 07102, usa 2department of electronics & communication engineering, national institute of technology silchar, assam, india abstract. in this study, we have proposed and investigated the effect of coupled quantum wells to reduce electron overflow in ingan/gan nanowire white color light-emitting diodes. the coupled quantum well before the active region could decrease the thermal velocity, which leads to a reduced electron mean free path. this improves the electron confinement in the active region and mitigates electron overflow in the devices. in addition, coupled quantum well after the active region utilizes the leaked electrons from the active region and contributes to the white light emission. therefore, the output power and external quantum efficiency of the proposed nanowire leds are improved. moreover, the efficiency droop was negligible up to 900 ma injection current. key words: nanowires, light-emitting diodes, electron blocking layer, molecular beam epitaxy. 1. introduction indium gallium nitride (ingan) based white color light-emitting diodes (wleds) have tremendous energy-saving potentials in solid-state technology [2, 3]. compared to conventional planar structures, iii-nitride nanowires can exhibit significant advantages, including greatly reduced dislocation densities and polarization fields, due +to the effective lateral stress relaxation. moreover, the nanowires show improved carrier confinement due to the incorporation of quantum dots/disks, which is promising for high-efficiency leds with tunable emission [4-6]. however, nanowire leds still pose several challenges for further improving received march 24, 2021; received in revised form may 09, 2021 corresponding author: hieu pham trung nguyen new jersey institute of technology, university heights, newark, nj 07102, usa e-mail: hieu.p.nguyen@njit.edu * an earlier version of this paper was presented at the international conference on micro/nano electronics devices, circuits and systems (mndcs-2021), 30-31 january, 2021, india [1]. 394 r. t. velpula, b. jain, t. r. lenka, h. p. t. nguyen the quantum efficiency and light output power, which may include non-uniform carrier distribution, electron overflow, and the presence of large densities of defects along the nanowire lateral surfaces [7, 8]. it is believed that one of the critical reasons for the efficiency droop is the electron overflow, and this also influences the output characteristics of leds, especially at high injection levels [9]. in leds, electron overflow is caused mainly by the non-uniform carrier distribution in the active region. as the effective mass of holes is higher and their mobility is lower compared to those of electrons, hole injection in ingan/gan structure is highly nonuniform. the holes reside close to the p-gan layer, while electrons have a relatively uniform distribution in the active region. the resulted non-uniform carrier distribution throughout the active region leads to the increased electron overflow. moreover, non-radiative recombination increases in the p-gan region due to the recombination of inefficient injection of holes and leaked electrons. this further reduces the device performance. one of the solutions to reduce the electron overflow is to increase the electron confinement in the active region by introducing a high al content p-algan electron blocking layer (ebl) in between the last quantum barrier (qb) and p-gan layer [9, 10]. however, if the ebl layer is not designed properly, it may affect the hole injection into the active region further by forming the positive sheet polarization charges at the heterointerface of last qb/ebl [11, 12] and thereby reduce the radiative recombination in the active region. in this context, designing an ebl-free led without compromising the optical performance is highly desired. to reduce the electron overflow without using an ebl, it is obvious that electrons should be slowed down before injecting into the active region. inserting a layer with a lower in composition reduces the kinetic energy and velocity of the injected electrons. moreover, by inserting this layer before the active region, hot electrons are thermalized by interacting with longitudinal optical (lo) phonons [13]. in this context, we have performed the experimental study of electron overflow in ingan/gan nanowire wleds, wherein nin0.2ga0.8n well is incorporated between the n-gan and the device active region to effectively control electron overflow. furthermore, to utilize the electrons escaped from the active region, we have employed a p-ingan quantum well between the active region and p-gan to reduce the electron loss to the p-gan and contribute blue light emission to relatively control the white light emission from the led device [14, 15]. moreover, it is required to understand the fundamental mechanism behind the reduction of electron leakage due to incorporating the coupled quantum wells, which are placed before and after the active region. in this study, we have investigated the performance of coupled quantum wells in ingan/gan self-organized nanowire wleds and presented the detailed carrier mechanism via theoretical model. 2. molecular beam epitaxial growth of ingan/gan nanowire heterostructures on si (111) and fabrication vertically aligned ingan/gan nanowire heterostructures were grown on si (111) substrates by radio-frequency plasma-assisted molecular beam epitaxy (veeco gen ii mbe) under nitrogen-rich conditions. the substrate growth temperature for gan nanowires and ingan are at 730 °c and 550 600°c, respectively. during the nanowire growth, the nitrogen flow rate and forward plasma power were kept at 1 sccm and ~ 350 w, respectively. the device active region contains ten ingan/gan quantum dots with ~ 3 nm ingan quantum dot and ~ 3 nm gan quantum barrier layer. for led2, the device active region is sandwiched by two ingan/gan quantum wells which were grown at 630°c to control electron overflow in the controlled electron leakage in electron blocking layer free ingan/gan nanowire light-emitting diodes 395 active region and utilize the electron leakage out of the active region for the blue light emission. such uniformly grown nanowire samples are suitable for our device fabrication. the device fabrication of wleds involves the following steps. to remove native oxides from the nanowire surface and the backside of the si substrates, we have cleaned the nanowire led samples initially with hcl and then with hf. next, the cleaned nanowire samples were spin-coated with polyimide resist to fully cover and planarize the nanowires, which also avoids the short circuit between the top and bottom electrodes. the top portion of the nanowires were exposed by etching polyimide resist using the o2 dry etching method. deposition of the top metal contact (p-metal contact) includes three main steps. first, ni(5 nm)/au(5 nm) layers were deposited on the surface of p-gan nanowires, followed by, deposition of 200 nm indium tin oxide (ito) layer on the device top surface, which can serve as the current spreading layer and the transparent electrode. further to improve the current spreading facility, ni/au metal patterns were deposited on the top of ito. the n-metal contact was deposited with ti(20 nm)/au(120 nm) layers on the backside of the si substrate. finally, the fabricated devices were annealed at ~500°c for 1 minute in a nitrogen ambient to achieve low ohmic contact resistance. the photolithography process was deployed to define the device size and electrode position. the device area is ~300×300 µm2. the developed phosphor-free ingan/gan nanowire wleds can be suitable candidates for smart display applications [14, 16, 17]. 3. simulation setup and parameters figure 1 shows the schematic of two ingan/gan nanowire led structures considered in this study. the first structure, led1, consists of a 200 nm n-gan nanowire template, 10 multiple quantum wells (mqws) of 3 nm ingan quantum well (qw)/ 3 nm gan qb in the active region, and a 100 nm p-gan. the proposed structure, denoted as led2, has the same structure as led1, but with an extra 30 nm thick n-doped in0.2ga0.8n layer introduced in between the n-gan template and the active region. moreover, an extra 10 nm thick pdoped in0.2ga0.8n qw is also introduced in between the last barrier and p-gan layer. in fig. 1. schematic diagram of (a) led1 and (b) led2 396 r. t. velpula, b. jain, t. r. lenka, h. p. t. nguyen this study, the band offset ratio for ingan was set as 0.7/0.3, induced polarization charges due to both spontaneous and piezoelectric polarization are assumed to be 10% of the theoretical values [18]. 4. results and discussion figure 2 shows the transmission electron microscope (tem) image of led2, where 30 nm n-ingan qw, 3nm/3nm ingan/gan qds in the active region, and 10 nm p-ingan qw are clearly identified. moreover, crystal defects are not visible. the ingan/gan qds in the active region are positioned in the center of the nanowires due to strain-induced self-organization. fig. 2. tem image of led2, wherein nand pingan qws and ingan/gan qds are identified. figure 3(a) depicts a strong photoluminescence spectra of led1 and led2. the emission peak at ~ 550 nm corresponds to the emission from the active region, while the emission peak at ~ 430 nm in the case of led2 is due to the emission from the coupled quantum wells. further, normalized electroluminescence spectra of led2 at various injection currents are shown in fig. 3(b). the peak emission at ~ 550 nm originates from the active region, which is well agreed with the photoluminescence results, as shown in fig. 3(a). it is seen that emission at ~ 430 nm is progressively stronger with the increase in the injection current. this is because, at a higher injection current, more injected electrons can escape from the active region and have more chance to recombine with the holes in the p-ingan qw located inbetween the active region and p-gan layer. the electroluminescence spectra cover the whole visible range and show the balanced rgb distribution. the experimentally measured light output power (lop) and external quantum efficiency (eqe) of led1 and led2 are shown in figs. 3(c) and 3(d). it is seen that led2 demonstrates the high output power and eqe as compared to the conventional led i.e., led1. more importantly, no efficiency droop was observed in led2 up to an injection current of 900 ma. the improved performance of led2 is attributed to the ingan coupled quantum wells incorporated before and after the active region. the detailed mechanisms of the ingan coupled quantum wells on the improvement of the led performance are theoretically investigated through the mean free path (lmfp) model as follows. controlled electron leakage in electron blocking layer free ingan/gan nanowire light-emitting diodes 397 fig. 3 (a) normalized photoluminescence spectra of led1 and led2 measured at 300k, (b) electroluminescence spectra of led2 measured at different injection currents at 300k, (c) light output power-current characteristics for led1 and led2 measured at 300k and (d) relative eqes measured for led1 and led2 measured at 300k. the schematics of the energy band diagrams of led1 and led2 are depicted in figs. 4(a) and 4(b), respectively, along with four electron transport processes in the active region. illustrated in fig. 4, the incoming electrons are scattered and fall into the quantum wells denoted by process 1. some of those fallen electrons recombine with the holes radiatively as well as with the crystal defects as depicted by process 2 while remaining electrons escape from the qws and become free again, as illustrated by process 3. in addition, some electrons with longer lmfp travel to a remote position without being captured by the quantum wells as depicted by process 4. the lmfp of these electrons needs to be reduced so that the carrier concentration in the qws would be increased that would favor the higher radiative recombination rate in the active region by reducing the electron overflow. here, we have considered the total number of electrons injected into the n-gan region to be n0 for both led structures. for the simplicity of the model, electron loss through non-radiative recombination is neglected. also, the hole concentration in the n-ingan layer between n-gan and active region in the case of led2 is much lower than the electron concentration, so the electron loss through radiative recombination with holes is also negligible. it is assumed that out of no electrons, n2 electrons captured by the first extra qw undergo thermalization with lo phonon emission while remaining electrons denoted as n1, directly travel over the extra qw layer without undergoing thermalization. the captured electrons in the quantum wells are correlated with the electron lmfp [19]. to increase the number of the quantum wellcaptured electrons, the electron lmfp within the ingan/gan mqw region must be reduced. 398 r. t. velpula, b. jain, t. r. lenka, h. p. t. nguyen to understand the working mechanism of the extra qw before the active region in led2 in reducing lmfp, electron lmfp in both the leds are calculated, which is a function of thermal velocity (vth) and the scattering time (τsc) set to 0.0091ps [20, 21], as shown in eq. 1. vth can be further expressed as shown in eq. 2. for led2 with an extra qw n-ingan before the active region, the expression for vth will be as shown in eq. 3. = mfp th scl v (1) 2 [ ] /= th ev e m (2) _ 2 [ ] /=  +  + −  − th eqw c lo c ev e e qv e m 2 [ ] /=  + − lo ee qv m (3) in eq. 1-3, e is the electrons energy before getting into the qw i.e., electron energy in the ngan layer, me is the effective mass of electrons. -ℏωlo means the energy loss by phonon emission, qv is the work done to the electrons by the polarization induced electric field in the extra qw. the first 𝛥𝐸𝑐 in eq. 3 represents the kinetic energy received by the electrons when jumping over the conduction band offset between n-gan and n-in0.2ga0.8n extra qw and −𝛥𝐸𝑐 represents the energy loss by the electrons when climbing over the conduction band offset between n-in0.2ga0.8n and the gan layer. here it is assumed that the thermionic emission process dominates over the intra-band tunneling during the electrons transport into the active region, thus 𝛥𝐸𝑐 can be eliminated, as shown in eq. 3. the energy loss through lo phonon emission i.e. -ℏωlo is considered to be 92 mev [21] and qv = ∫ 𝑞 × 𝐸(𝑦)𝑑𝑦 𝑡𝑒𝑄𝑊 0 is calculated from the electric field as shown in fig. 5(a). value of qv is found to be 47 mev. to understand the effect of extra qw to reduce the electron mean free path, it can be understood from eq. 2 and 3 that 𝐸 + 𝑞𝑉 − ℏ𝜔𝐿𝑂 < e. as qv is 47 mev and ℏωlo is 92 mev, overall 𝐸 + 𝑞𝑉 − ℏ𝜔𝐿𝑂 < e due to which vth_eqw < vth and lmfp_eqw < lmfp. this shows that the extra quantum well before the active region has a significant effect in reducing the electron lmfp in the active fig. 4. schematic energy band diagrams for (a) led1 and (b) led2 controlled electron leakage in electron blocking layer free ingan/gan nanowire light-emitting diodes 399 region, and consequently increasing capture efficiency of electrons in the quantum well and reducing the possibility of electron leakage, as shown in fig. 5(b). fig. 5 calculated electric field as a function of position within the n-ingan layer at 900 ma further, a blue-emitting ingan qw is incorporated between the last qb and p-gan region, wherein the escaped electrons from the active region can be captured and radiatively recombined with the holes as the hole concentration in this qw is high as it is close to p-gan region. this radiates blue light and contributes to the white light emission from the led device. the resulting device exhibits highly stable white-light emission characteristics. 5. conclusion in conclusion, a highly efficient and truly white light-emitting ingan/gan nanowire led with a coupled quantum well is demonstrated. the coupled n-ingan qw incorporated between the n-gan and active region improves the electron capture efficiency in the multiple quantum wells by reducing lmfp after electrons undergo thermalization by phonon emission in the n-ingan qw. further, the p-ingan after the active region captures the leaked electrons and contributes to the white light emission by radiatively recombine with the holes. the resulted ebl-free nanowire white leds show improved output power and no efficiency droop up to injection current of 900 ma. acknowledgments: this work is supported by the us national science foundation under grant number 2013783. references [1] r. t. velpula, b. jain, t.r. lenka, h. p. t. nguyen, “ ingan/gan nanowire white color light-emitting diodes without electron blocking layer” in proceedings of the international conference on micr/nano electronics devices, circuits and systems (mndcs-2021), 30-31 january, 2021, india. [2] e. f. schubert and j. k. kim, "solid-state light sources getting smart", science, vol. 308, no. 5726, pp. 1274-1278, 2005. [3] s. tan, x. sun, h. v. demir, and s. denbaars, "advances in the led materials and architectures for energy-saving solid-state lighting toward “lighting revolution", ieee photonics j., vol. 4, no. 2, pp. 613619, 2012. [4] h. p. t. nguyen, k. cui, s. zhang, s. fathololoumi, and z. mi, "full-color ingan/gan dot-in-a-wire light emitting diodes on silicon", nanotechnology, vol. 22, no. 44, pp. 445202-445206, 2011. [5] w. guo, a. banerjee, p. bhattacharya, and b. s. ooi, "ingan/gan disk-in-nanowire white light emitting diodes on (001) silicon", appl. phys. lett., vol. 98, no. 19, pp. 193102-193104, 2011. ( ( 400 r. t. velpula, b. jain, t. r. lenka, h. p. t. nguyen [6] d. t. tuyet, v. t. h. quan, b. bondzior, p. j. dereń, r. t. velpula, h. p. t. nguyen, l. a. tuyen, n. q. hung, and h.-d. nguyen, "deep red fluoride dots-in-nanoparticles for high color quality micro white lightemitting diodes", opt. express, vol. 28, no. 18, pp. 26189-26199, 2020. [7] j. xie, x. ni, q. fan, r. shimada, ü. özgür, and h. morkoç, "on the efficiency droop in ingan multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers", appl. phys. lett., vol. 93, no. 12, pp. 121107-121109, 2008. [8] c. g. van de walle and d. segev, "microscopic origins of surface states on nitride surfaces", j. appl. phys., vol. 101, no. 8, pp. 081704-081709, 2007. [9] h. p. t. nguyen, k. cui, s. zhang, m. djavid, a. korinek, g. a. botton, and z. mi, "controlling electron overflow in phosphor-free ingan/gan nanowire white light-emitting diodes", nano lett., vol. 12, no. 3, pp. 1317-1323, 2012. [10] s.-h. han, d.-y. lee, s.-j. lee, c.-y. cho, m.-k. kwon, s. lee, d. noh, d.-j. kim, y. c. kim, and s.-j. park, "effect of electron blocking layer on efficiency droop in ingan/gan multiple quantum well lightemitting diodes", appl. phys. lett., vol. 94, no. 23, pp. 231123-231125, 2009. [11] n. wang, y. a. yin, b. zhao, and t. mei, "performance analysis of gan-based light-emitting diodes with lattice-matched ingan/alinn/ingan quantum-well barriers", j. disp. technol., vol. 11, no. 12, pp. 1056-1060, 2015. [12] r. t. velpula, b. jain, h. q. t. bui, f. m. shakiba, j. jude, m. tumuna, h.-d. nguyen, t. r. lenka, and h. p. t. nguyen, "improving carrier transport in algan deep-ultraviolet light-emitting diodes using a stripin-a-barrier structure", appl. opt., vol. 59, no. 17, pp. 5276-5281, 2020. [13] k.-t. tsen, r. joshi, d. ferry, a. botchkarev, b. sverdlov, a. salvador, and h. morkoç, "nonequilibrium electron distributions and phonon dynamics in wurtzite gan", appl. phys. lett., vol. 68, no. 21, pp. 29902992, 1996. [14] b. jain, r. t. velpula, h. q. t. bui, h.-d. nguyen, t. r. lenka, t. k. nguyen, and h. p. t. nguyen, "high performance electron blocking layer-free ingan/gan nanowire white-light-emitting diodes", opt. express, vol. 28, no. 1, pp. 665-675, 2020. [15] r.t. velpula, b. j., t.r. lenka, h.p.t. nguyen, "ingan/gan nanowire white color light-emitting diodes without electron blocking layer", 1st international conference on micro/nanoelectronics devices, circuits and systems (mndcs 2021), assam, india, 2021. [16] h. q. t. bui, r. t. velpula, b. jain, o. h. aref, h.-d. nguyen, t. r. lenka, and h. p. t. nguyen, "fullcolor ingan/algan nanowire micro light-emitting diodes grown by molecular beam epitaxy: a promising candidate for next generation micro displays", micromachines, vol. 10, no. 8, pp. 492-500, 2019. [17] m. rajan philip, d. d. choudhary, m. djavid, m. n. bhuyian, t. h. q. bui, d. misra, a. khreishah, j. piao, h. d. nguyen, and k. q. le, "fabrication of phosphor-free iii-nitride nanowire light-emitting diodes on metal substrates for flexible photonics", acs omega, vol. 2, no. 9, pp. 5708-5714, 2017. [18] h. p. t. nguyen, m. djavid, s. y. woo, x. liu, a. t. connie, s. sadaf, q. wang, g. a. botton, i. shih, and z. mi, "engineering the carrier dynamics of ingan nanowire white light-emitting diodes by distributed p-algan electron blocking layers", sci. rep., vol. 5, no. 1, pp. 1-7, 2015. [19] z.-h. zhang, w. liu, s. t. tan, z. ju, y. ji, z. kyaw, x. zhang, n. hasanov, b. zhu, and s. lu, "on the mechanisms of ingan electron cooler in ingan/gan light-emitting diodes", opt. express, vol. 22, no. 103, pp. a779-a789, 2014. [20] x. ni, x. li, j. lee, s. liu, v. avrutin, ü. özgür, h. morkoç, and a. matulionis, "hot electron effects on efficiency degradation in ingan light emitting diodes and designs to mitigate them", j. appl. phys., vol. 108, no. 3, pp. 033112-033124, 2010. [21] x. ni, x. li, j. lee, s. liu, v. avrutin, ü. özgür, h. morkoç, a. matulionis, t. paskova, and g. mulholland, "ingan staircase electron injector for reduction of electron overflow in ingan light emitting diodes", appl. phys. lett., vol. 97, no. 3, pp. 031110-031112, 2010. нинослав стојадиновић, редовни члан академије инжењерских наука србије (аинс) од 1999 facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. i-ii © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd in memoriam ninoslav stojadinović, a friend of many, passed away on december 25, 2020, after one month of fight with covid-19. ninoslav, for friends nino, was a chairman of many conferences, editor of many scientific journals, well-known and famous professor, a highly respected mentor to his students, and a role model for colleagues. he was editor-in-chief of the scientific journal facta universitatis, series: electronics and energetics (university of niš) in the period 2013-2020. ninoslav d. stojadinović was born in niš on 20 september 1950 (father dobrivoje stojadinović and mother nadežda đorđević). he was married to anđelka with whom he had a son dragan. he spent most of his student and working life at the faculty of electronic engineering, university of niš, serbia. it was at this university where he obtained all his degrees, b.s. (1974), m.s. (1977), and ph.d. (1980), all in electrical engineering. he started first professional job in "ei-semiconductors" in niš in 1974, joined the faculty of electronic engineering in 1976, where he became full professor in 1991. he was head of the department of microelectronics (1984-2005), vice-dean (1986-1989), and dean of the faculty of electronic engineering in niš (1989-1994). he was vice-director of sasa research center at the university of niš from 1991-1996. based on his versatile scientific and teaching work, as well as the achieved results, he became an academician at the department of technical sciences of the serbian academy of sciences and arts (sasa, corresponding member from october 30, 2003; full member from november 1, 2012). he was president of the sasa branch in niš from 2016-2020. ninoslav stojadinović was a member of commissions for promotion of teaching staff at griffith university (australia), brown university (usa), national technical university of athens (greece), technical university of sofia (bulgaria), and banaras hindu university (india). in 1997 he was a visiting professor at the technical university of wien. under his supervision 48 dipl. ing. theses, 13 m.sc. theses, and 17 ph.d. theses were realised. since 1990 he was a member of the editorial board of microelectronics journal (elsevier), while from 1993-1995 he was editor-in-chief of this very journal. from 1993-1996 he was regional editor for europe of microelectronics reliability (elsevier), and editor-in-chief of this journal in period 1996-2017. from 2013-2020 he was editor-in-chief of the journal facta universitatis, series: electronics and energetics (university of niš). also, he was member of the scientific and/or programme committee of more than 50 international and numerous national scientific meetings. since 1986 he was a member of the international institute of electrical and electronics engineers (ieee). in the period 2002-2005 he was chair of serbia & montenegro ieee section, from 1994-2020 he was chair of its ieee ed/ssc chapter. in 1998 he became ieee senior member, in 2003 ieee fellow, and in 2019 life fellow. since 1996 he was ieee eds distinguished lecturer for the field of microelectronics. he was chair of society for etran in the period 2001-2006. he was editor-in-chief of journal ieee eds newsletters in the period 1998-2001, and ieee eds adcom member in the period 2002-2007. in the period 1984-1991 he was member of expert teams for creation of development strategy of microelectronics and electronics in serbia and yugoslavia. from ii 1990-1995 he was chair of committee for electrotechnics, and from 1995-1998 he was member of committee for information technology at the ministry of science and technology of republic of serbia. in 1988 he founded the department of microelectronics at the faculty of electronic engineering in niš, and course in microelectronics. in the period 1988-1991 within the department of microelectronics at the faculty of electronic engineering in niš, he founded three scientific research laboratories where several scientific research projects were realised. since 2001 he was a member of international scientific advisory boards at center for nanotechnologies, clemson university (usa) and center of excellence: micro and nanotechnology applied research, warsaw technical university (poland). since 2005 he was member of the european expert commission for the seventh research framework program ec fp7, while since 2008 he was consultant of the national science foundation of taiwan government (nsftg). ninoslav stojadinović published 97 papers (9 invited/review) in the reputable international journals of sci list and 185 papers (23 invited) in the proceedings of international and national scientific conferences. he was author/coauthor of four chapters in international monographs: computer engineering handbook and digital design and fabrication (crc press, usa), micro electronic and mechanical systems (in-tech press, boca raton) and bias temperature instability for devices and circuits (springer science). according to data from scopus, his papers are cited more than 560 times. he realised a number of technological solutions, six of which are applied in microelectronics industry all over the world. ninoslav stojadinović had significant political and diplomatic experience. he was a member of the assembly of the republic of serbia in the period 1997-2000, member of the assembly of the state union of serbia and montenegro, and its representative to the parliamentary assembly of the council of europe, in the period 2004-2006, deputy speaker of assembly of the republic of serbia in the period 2014-2016. also, he was ambassador of the republic of serbia to the kindgom of sweden (2005-2011) and bosnia and hercegovina (2011-2013). nino was always available to support students and colleagues in their first steps in many important professional tasks. we will never forget his significant contribution in all fields. we will miss him for a long time but his contribution will stay engraved in the marble of the history of many universities, institutions, journals and conferences. we express our deepest condolences to all scientists around the world who followed his works, known him, or met him. editorial board instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 393 405 doi: 10.2298/fuee1503393m ztc bias point of advanced fin based device: the importance and exploration  sushanta k mohapatra, kumar p. pradhan, prasanna k. sahu nano electronics laboratory, department of electrical engineering, national institute of technology (nit), rourkela, 769008, odisha india abstract. the present understanding of this work is about to evaluate and resolve the temperature compensation point (tcp) or zero temperature coefficient (ztc) point for a sub-20 nm finfet. the sensitivity of geometry parameters on assorted performances of fin based device and its reliability over ample range of temperatures i.e. 25 0c to 225 0c is reviewed to extend the benchmark of device scalability. the impact of fin height (hfin), fin width (wfin), and temperature (t) on immense performance metrics including on-off ratio (ion/ioff), transconductance (gm), gain (av), cut-off frequency (ft), static power dissipation (pd), energy (e), energy delay product (edp), and sweet spot (gmft/id) of the finfet is successfully carried out by commercially available tcad simulator sentaurustm from synopsis inc. key words: finfet, tcp or ztc, hfin, wfin, static and dynamic performances. 1. introduction and background concept between the two types of transistors, the bipolar devices (bjts) are more temperature sensitivity and show large variations in the operating point with temperature fluctuations. the unipolar devices (fets) are not so prone to instabilities due to temperature effects, but it is still needed to investigate the behaviour precisely the device performance when the transistor dimension enters in to nanometre scale. because the physical, chemical, mechanical, thermal and optical properties of devices change significantly from those at larger scales. from the basic operating principle point of view, a mosfet is a voltage controlled majority carrier device. the movement of majority carriers is controlled by the voltage applied on the control electrode (called gate) which is insulated by a thin metal oxide layer from the bulk semiconductor body. the electric field produced by the gate voltage modulate the conductivity of the semiconductor material in the region between the main current carrying terminals called the drain (d) and the source (s) [1]. received march 5, 2015 corresponding author: sushanta k mohapatra nano electronics laboratory, department of electrical engineering, national institute of technology (nit), rourkela, 769008, odisha india (e-mail: skmctc74@gmail.com) 394 s k mohapatra, k p pradhan, p k sahu changes in temperature affect system speed, power, and reliability. this effect is caused by altering the threshold voltage (vth), mobility (µ), and saturation velocity (vsat) in the device. the resulting changes in device current can lead to failures [2]. vth, µ, vsat and supply voltage (vdd) are all technology dependent parameters, with predicted values available down to the 22 nm node [itrs]. use of high-k dielectrics and metal gates to alleviate nanoscale gate leakage problems also alters vth, µ and vsat. the combination of these changes makes it difficult to determine the effect of temperature on the device performance [3]. the temperature effect is important to be considered because of thermal runaway. in the temperature dependence region, circuits continue to speed up as temperature increases. the higher temperatures could result in thermal runaway resulting from the exponential temperature dependence of leakage current, which may already be dominating the total power consumption in the nanoscale regime [4]. mosfets are widely used in the field of military, satellite communications, medical equipment, automobile, nuclear sectors, wireless and mobile communications, etc., as amplifier design, analog integrated circuits (ics), digital cmos design, mixed-signal ics, power electronics and switching devices. as for demand in variety of applications and the use the nanoscale transistors, it is important to analyze the performances at a wide range of temperatures [5]. according to the literature, several technologies have been explored as an option for both low and high temperature operations. few of them are complementary metal oxide semiconductor (cmos), silicon on insulator (soi) [6], and iii-v semiconductors. the unwanted flow of high leakage current through the well junction and the presence of latch up puts a limit on the use of bulk cmos devices at high temperatures. however, due to the absence of the well and latch up in soi devices, it can be preferred for both low and high temperature operations [7]–[9]. vadasz and grove [10] reported the temperature dependence of bulk mosfet at below saturation region. as for theoretical and experimental agreement, the variation of channel conductance with temperature is shown to be due to the variation of the threshold voltage and of the inversion layer mobility. bipolar transistors are considered to be unusable at low temperatures as a consequence of strongly reduced current gain [11], [12]. gaensslen et al. [13] presented an enhancement mode fet with a channel length of 1 µm suitable for operation at liquid nitrogen temperature. they claimed the performance of fet devices are significantly improved in terms of device turn-on time, 1.7 to 4 times higher transconductance, and an increasing threshold voltage at 77 k. other advantages are a decrease of 1000 times inversion layer leakage currents, 6 times higher silicon thermal conductivity, and 6 times lower aluminium line resistance. there is no significant difference in temperature dependence of threshold voltage was observed between ‘thick-film’ soi and bulk mosfet’s reported by krull and lee [14]. groeseneken et al. [15] documented that, in thin-film soi n-channel mosfet’s the device is fully depleted below a critical temperature and above, the device is no longer fully depleted. the drain current id is influenced by two terms, i.e., channel mobility µ and threshold voltage vth as [16] ( ) ( )[ ( )]d gs thi t t v v t   (1) the mobility term of (1) forces id to decrease, whereas the [vgs vth] term increases id with increase in temperature. but the behaviour of id with temperature shows an opposite effect at a fixed gate bias voltage. the effect of two controlling terms of (4) is ztc bias point of advanced fin based device: the importance and exploration 395 nullified at a fixed value of bias voltage, which is defined as zero temperature coefficient (ztc) bias point. the so called ztc point has been identified for bulk cmos by shoucair [17] and prijic et al. [18], in both the linear and the saturation regions for temperatures between 27 0 c and 200 0 c. later, groeseneken et al. [15] and jeon and burk [9] demonstrated the existence of the ztc point experimentally for thin and thick-film soi mosfets, respectively [19]. both experimental and analytical results for the ztc point over a high temperature range (25 0 c-300 0 c) of a partially depleted (pd) soi mosfet has been introduced by osman et al. [20]. they have identified two distinct temperature coefficient points, in the linear as well as in the saturation region. tan et al. [16] have analysed the fully depleted (fd) and lightly doped enhanced soi n-mosfet over a wide range of operating temperature (300 k-600 k). it is desirable to bias the digital and analog circuits meant for wide temperature applications at a point where the v-i characteristics show little or no variation with respect to temperature. this inflection point is typically known as temperature compensation point (tcp) or zero temperature coefficient (ztc) [15], [18], [20]–[22]. 2. ztc bias point there are two ztc points for a transistor, one for the drain current and the other for the transconductance, and in general they have different values in linear and saturation regions. these ztc points are defined as the points at which the drain current or the transconductance remains constant and independent of temperature. the ztc points, are values of vgs at which the reduction of the threshold voltage is counter-balanced by the reduction of the mobility, and as a result, the value of the drain current or the value of the transconductance remains constant as the temperature varies. for gate voltages lower than ztc, the decrease of threshold voltage is dominant, as a matter of fact drain current increases with temperature, while for gate voltages higher than ztc, the mobility degradation predominates and drain current decreases with temperature. the ztc is a very important bias point for analog designers as it corresponds to a gate voltage at which the device dc performance remains constant with temperature [19], [23], [24]. 3. significance of ztc bias ztc biasing is one of the important techniques in high temperature design especially for operational transconductance amplifier (ota). the principal advantages of ztc technique are [25]:  it maintains a constant operating point over a wide range of temperatures so that no transistors operate out of saturation.  it ensures stability of the circuit over a wide range of temperatures.  design simplicity and ensures reliable circuit operation when several stages are used. it provides a bias point that is temperature independent. the main disadvantages of ztc are: high overdrive voltage associated with ztc bias results in reduced intrinsic gain due to the low gm as well as reduced signal swing. the reduced gm with temperature can affect the small signal performances of the amplifier like gain, bandwidth, etc., especially when the amplifier is required to operate over a wide range of temperatures. 396 s k mohapatra, k p pradhan, p k sahu the multi-gate structures like double gate (dg) mosfet fabricated on soi wafers is one of the most promising candidates due to its attractive features of low leakage current, high current drivability (ion), transconductance (gm), reduced short channel effects (sces), steeper subthreshold slopes, and suppression of latch-up phenomenon [26]–[31]. in a recent work [32]–[34], a detailed analysis of inflection point to examine its reliability issues over a wide range of temperature variations (100 k-400 k) for both analog and rf applications of dg mosfet with hkmg technology was reported. to pamper the market requisites, the density of transistors in a chip and the performance in terms of speed and power consumption are needed to be increased. the transistor miniaturization is one of the major concerns behind performance and cost. undesirable short channel effects (sces) [35] and excessive vth variation occurred beyond 32 nm technology node, hence there is searching for new technologies/methodologies. the new methodologies lead in two directions: one is the introduction of new materials into the classical single gate mosfets like develop uniaxial/biaxial strain in the channel region to enhance the carrier mobility in the channel region and implementation of high-k dielectric materials as gate oxide to minimize the gate leakage current. second is the development of non-classical multigate mosfets (mug-fets) which is a very good concept for further scaling of the device dimensions. so, the integrated device manufacturer (idm), foundries and electronic design automation (eda) companies grant more investments with an emphasis on most promising 3-d finfet technology. the advantages of finfet technology are higher drain current and switching speed, less than half the dynamic power requirement with 90% less static leakage current [36], [37]. 4. finfet design (a) (b) fig. 1 (a) perspective 3-d (b) 2-d cross sectional view of soi finfet the geometrical process parameters of finfets are as:  gate length (lg): the physical gate length of finfets.  fin height (hfin): the height of silicon fin. ztc bias point of advanced fin based device: the importance and exploration 397  fin width (wfin): the width of silicon fin.  gate oxide thickness (tox): the thickness of the gate oxide.  underlap channel length (lun): the region under si3n4 spacer. among all the parameters the hfin and wfin are the two which play a major role to be investigated. a tradeoff is required between the wider fin which results in unacceptable sces and narrower increases parasitic resistance and is hard to manufacture. similarly from the manufacturing point of view, a taller fin achieves a better layout efficiency and higher current. so we have adopted various design parameters like wfin/lg = 0.25, 0.5, 0.6, 0.8, 1 and hfin/lg = 0.25, 0.6, 0.8, 1, 1.1, 1.3 in our simulation [38]–[40]. an n-channel mosfet, having interfacial oxide as sio2 with high-k material (si3n4) as spacer in the underlap regions (lun) is modeled. the lun is considered as 5 nm from both sides of the channel towards source and drain side. fig. 1(a) and (b) show a three dimensional, as well as 2-d cross sectional view of the finfet with source/drain length (ls/ld) as 40 nm. the source drain doping is gaussian in nature with peak nd at a density of 10 20 cm -3 . the equivalent oxide thickness (eot) is 0.9 [39], [41], [42] nm and supply voltage vdd = 0.7 v. the work function for the gate electrode is assumed to be 4.5 ev. the channel is undoped which augments the effective mobility, and hence the current density from the source [35]. 5. simulation setup the numerical simulation uses the drift diffusion approach [43], and the models activated in the simulation comprise a field dependent mobility, concentration dependent mobility and velocity saturation model. the technology parameters and the supply voltages employed for the device simulations are according to the analog itrs roadmap [44] for below 50 nm gate length devices. the work functions of the metal gates are adjusted to achieve the desired vth value. physical models accounting for electric field dependence of mobility are invoked in the simulation. the inversion layer mobility models [45], along with shockley–read–hall (srh) [46], [47] and auger recombination models are included. the inversion-layer lombardi mobility model calculates the mobility degradation which normally occurs due to a higher surface scattering near the semiconductor to insulator interface which also includes coulomb and phonon scattering. it deems the effect of transverse fields along with doping and temperature dependent parameters of mobility. the srh and auger recombination models are applied for minority carrier recombination. in addition, the basic mobility model is employed to consider the effect of doping dependence, high-field saturation (velocity saturation), and transverse field dependence. the impact ionization and band to band augur recombination model are included in the simulation. the silicon band gap narrowing the model that sorts out the intrinsic carrier concentration is activated. 6. effect of hfin and wfin on scalability in this section, the scalability of device is being discussed, the on-state drive current (ion), and off-state leakage current (ioff). the variation of fin height (hfin) and fin thickness (wfin) on drain current is traced in fig. 2(a) and (b) respectively. to analyze the immense improvement in gm (id/vgs) with increase in hfin/lg ratio, we have appraised and studied the 398 s k mohapatra, k p pradhan, p k sahu id-vgs curve. the sub threshold slope (ss) is an important parameter for calculating the off state current. furthermore, ss is calculated as: ( ) (log ) gs d v ss mv dec i    (2) exp( )d gsi qv kt  (3) where, the logarithm is in base 10, id is the drain current, vgs is the gate voltage, q is the charge of electron, k is the boltzmann’s constant, η is the body factor and t is the temperature. at room temperature (300 k) and ideal condition (η=1), the function exp(qvgs / kt) changes by 10 for every 60 mv change in vgs. the ideal value for the ss is 60 mv/decade. (a) (b) fig. 2 drain current (id) of the device in log scale as a function of gate to source voltage (vgs) with variability of process parameter (a) hfin (b) wfin. from fig. 2(a), as hfin/lg ratio increases, there is a lofty leakage current observed but with this ss also increases. however, with the same (high hfin/lg ratio), parasitic resistance problem can be avoided, which further increases the drain current. similarly, fig. 2(b) demonstrates that the leakage current can be significantly reduced for lower wfin/lg ratio cases. this is because by picking a smaller wfin, we can minimize the longitudinal electric field at the source side because of the precincts of multiple gates. from both figures, it can be noticed that ss augments with the increment in both ratios, i.e. hfin/lg and wfin/lg, although its value is very close to the ideal one, i.e. 60 mv/decade. the ion and ioff are very much dependent on vital device geometry parameters, i.e. hfin and wfin. so, there is always an accord between ion and ioff for the device design and device engineers can choose the optimum parameter dimensions as their requirement for specific applications. ztc bias point of advanced fin based device: the importance and exploration 399 (a) (b) fig. 3 on current (ion) and leakage current (ioff) with variation of (a) hfin (b) wfin at vgs= vds= vdd. the important figure of merit for digital application, i.e. ion versus ioff for different hfin/lg and wfin/lg ratios is presented in fig. 3(a) and (b). as for our previous discussion, both ion and ioff increase with the increase in hfin. this is to confirm that for high drive current with matching the current drivability, taller fins are required, whereas narrow fins give better sce immunity. this is because an increase in hfin results in decrease of the electric field in the silicon region which enhances carrier mobility and further the on state current. by comparing ion and ioff for all hfin/lg cases, we can say that hfin = 0.6 x lg is the optimum one as it endues a moderate value for both ion and ioff. fig. 3(b) discussed the same ion versus ioff benchmark for different wfin/lg ratios. from the figure, a wider fin width (wfin = 1 x lg) gives unacceptable sces, whereas a narrower fin width (wfin = 0.2 x lg) is more difficult to fabricate. so, we can take the moderate one, i.e. wfin = 0.6 x lg as the optimized wfin/lg ratio. 6. investigation of analog performance with variation of temperature temperature dependency of the id is influenced by vth as (1), the mobility term (which is hampered due to scattering effects at high t) of (1) forces id to decrease, whereas the [vgs vth] term (improves at higher t as vth decreases) increases id with increase in temperature. but the behaviour of id with t shows just adverse response at a fixed gate bias voltage. the effects of two controlling terms of (1) are nullified at a fixed value of bias voltage, that the inflection point is called temperature compensation point (tcp). fig. 4(a) shows the variations of id with vgs at different bias temperatures. as for equation (1) at high gate bias, µ(t) dominates because of the heavy lattice scattering at higher t. it leads to a reduction in the channel mobility which further reduces id. at low gate bias, [vgs vth] term influences id to raise because of the shrinking nature of vth with an increase in t. these two opposite effects cancel out each other at a value of vgs where id shows minimal fluctuation with t. this inflection point as shown in fig. 4(a) is imminent in between vgs = 0.34 v. this creates an opportunity to use multigate mosfets for integrated circuit applications. 400 s k mohapatra, k p pradhan, p k sahu (a) (b) fig. 4 (a) drain current (id) as function of gate voltage (vgs) both in linear and log scale (b) leakage current (ioff) versus on current (ion) with variation of temperature. fig. 4(b) presents a plot for the important parameters which includes the variation of ion, ioff for different temperatures. from the figure, it can be observed that the behaviour of ion and ioff is absolutely opposite to each other with temperature variation. for high t values, the device shows a fairly large ioff and low ion, which is just reverse in the case of low t. this is because, as temperature increases, the mobility of carrier’s decreases due to scattering effects which further reduce ion. again the degradation in ioff at high temperatures is due to the lattice vibration and the phonon scattering phenomena play a significant role as t increases. the gm-vgs plot can simply be obtained by taking the derivative of id with respect to vgs. at vgs < vth, the channel is weakly inverted and id is due to diffusion. the diffusion current increases with t because of the increase in intrinsic carrier concentration as in einstein’s relation: d = kbt, where d is the diffusion constant, μ stands for mobility, kb is boltzmann’s constant and t represents temperature. at vgs > vth, the value of gm decreases with t due to the mobility degradation. the reduction in vth with temperature enhances gm, however the degradation of mobility reduces gm. these two phenomena influence each other to give rise for a temperature compensation point for gm. from fig. 5 (a), we can conclude that the value of transconductance ztc point (0.14 v) is lower than the drain current ztc bias point (0.34 v). the inflection point for id and gm are two important fom in analog circuit design for both high and low temperature applications. in opamp (operational amplifier) based circuit design and transistors used in biasing string can be biased at inflection point for drain current to maintain a constant dc current level. the input devices may be biased at an inflection point for transconductance to achieve stable circuit parameters. the above said points are obtained for constant bias conditions in case of floating body or body tied configuration mosfets. hence there is only one possibility to bias the transistor, i.e. either at inflection point for id or gm. moreover, this point is usually affected by process variations. hence, depending upon the nature of applications, the bias conditions are picked accordingly. ztc bias point of advanced fin based device: the importance and exploration 401 (a) (b) fig. 5 (a) transconductance (gm) and (b) cut off frequency (ft) as a function of gate voltage (vgs) with variation of temperature. cut-off frequency (ft) plays a vital role in evaluating the rf performance of the device plotted in fig. 6. generally, ft is the frequency at which the current gain is unity [42]. 2 m t gg g f c  (4) where gm, and cgg are the transconductance, total gate capacitance respectively. the enhancement in ft occurs at higher drive current and lower t values. this improvement in ft is partially due to the increment in gm and merely because of the low values of intrinsic capacitance. at low temperature, the improvement of cut-off frequency ft is due to a steep increase in mobility and in turn gm. in addition, it reveals the advantage of the multigate technology which exhibits ztc bias points over a wide range of temperatures (t=25 o c to 225 o c). (a) (b) fig. 6 (a) intrinsic gain (av) versus cut off frequency (ft) (b) sweet spot as a function of drain current (id) with variation of temperature. 402 s k mohapatra, k p pradhan, p k sahu the intrinsic gain (av = gm/gd) is a valuable fom for operational transconductance amplifier (ota) and is shown in fig. 6 (a). from the graph, a similar type of analysis can be made as in the case of gm and gd. from the figure, a high gain can be obtained for high temperatures in the subthreshold region and the reverse effect in super threshold region. fig. 6(b) presents one crucial parameter for analog/rf application, i.e. the ‘sweet spot’ (settlement among power, speed of operation and linearity), which is signified by the peak of transconductance to the current ratio (gm/id) and cut-off frequency (ft) product. the variation of the ‘sweet spot’ with id for a broad range of t (25 0 c to 225 0 c) is well examined from fig. 6(b). the device predicts pretty higher gmft/id values at low t and gradually starts decaying with the increase in t. the extracted static parameters like ion, ioff, ion/ioff, and power dissipation (pd=ioff*vdd) for a wide range of t variation are arranged in table 1. all the parameters predict significant improvements in the lower range of t values. the performances start deteriorating as t increases. there is a 77.04% enhancement in ioff, 79.01% improvement in on-off ratio, and 77.04% in pd, while t steps down from 75 0 c to 225 0 c. table 1 static performance of finfet with t variation temp. (0c) ion (μa) ioff (na) ion/ioff pd (ioff*vdd) (w) x10-8 25 128 16.03 7961.96 1.122 75 117 69.83 1670.96 4.888 125 108 211.01 512.33 14.77 175 101 492.53 205.52 34.47 225 95.6 950.03 100.64 66.50 in a similar fashion, table 2 reveals the dynamic analysis of finfet towards temperature sensitivity. the performances like ft, ‘sweet spot’, energy, and edp are exported and compared for different temperatures. alike the above discussed static performances, the dynamic parameters are also depict numerous enhancements at detrimental temperatures. table 2 ac/dynamic performance of finfet for different values of t temp. (0c) cgg (f) x10-18 peak ft (ghz) sweet spot (thz/v) delay (cv/ieff) (ps) energy (cv2) (j) x10-18 edp (js) x10-29 25 92.236 465 23.5 0.506 45.195 2.29 75 92.178 412 13.8 0.553 45.167 2.5 125 92.217 370 9.47 0.597 45.186 2.7 175 92.325 336 6.7 0.638 45.239 2.89 225 92.422 308 5.05 0.677 45.286 3.06 7. conclusion the dc characteristics of a 20 nm n-channel finfet for variation in fin width and fin height are carried out using sentaurus device simulator. from the results obtained by geometrical parameter variation, we can say that taller fins are required for higher current ztc bias point of advanced fin based device: the importance and exploration 403 drivability and narrower fins are required for higher immunization to sces. wfin = 0.6 x lg and hfin = 0.8 x lg cases show the desired device performances in terms of ion, ioff. when developing novel architectures to enable further miniaturization to meet the itrs requirements, the evaluation of ztc/tcp is one of the key analysis for optimal device operation and reliability. we have systematically analyzed the sensitivity of various finfet performances towards temperature variation. from the presented outcomes of this work, it is evident that there exist different inflection points for id, and gm, which should be seriously taken into consideration for finfet based circuit operation. references [1] s. m. sze, physics of semiconductor devices, third edit. john wiley and sons inc., 2009. [2] i. m. filanovsky and a. allam, "mutual compensation of mobility and threshold voltage temperature effects with applications in cmos circuits", circuits syst. i fundam. theory appl. ieee trans., vol. 48, no. 7, pp. 876–884, 2001. [3] b. cheng, m. cao, r. rao, a. inani, p. vande voorde, w. m. greene, j. m. c. stork, z. yu, p. m. zeitzoff, and j. c. s. woo, "the impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm mosfets", electron devices, ieee trans., vol. 46, no. 7, pp. 1537–1544, 1999. [4] n. s. kim, t. austin, d. baauw, t. mudge, k. flautner, j. s. hu, m. j. irwin, m. kandemir, and v. narayanan, "leakage current: moore’s law meets static power", computer (long. beach. calif)., vol. 36, no. 12, pp. 68–75, 2003. [5] h. p. wong, s. member, d. j. frank, p. m. solomon, c. h. j. wann, and j. j. welser, "nanoscale cmos", in proceedings of the ieee, vol. 87, no. 4, pp. 537–570, 1999. [6] m. bruel, "silicon on insulator material technology", electron. lett., vol. 31, no. 14, pp. 1201–1202, 1995. [7] g. k. celler and s. cristoloveanu, "frontiers of silicon-on-insulator", j. appl. phys., vol. 93, no. 9, pp. 4955–4978, 2003. [8] g. reichert, c. raynaud, o. faynot, f. balestra, and s. cristoloveanu, "submicron soi-mosfets for high temperature operation (300k-600k)", microelectron. eng., vol. 36, no. 1–4, pp. 359–362, jun. 1997. [9] d.-s. jeon and d. e. burk, "a temperature-dependent soi mosfet model for high-temperature application (27 °c-300 °c) ", ieee trans. electron devices, vol. 38, no. 9, pp. 2101 – 2111, 1991. [10] l. vadasz and a. s. grove, "temperature dependence of mos transistor characteristics below saturation", ieee trans. electron devices, vol. 24, no. 12, pp. 863–866, 1966. [11] b. lengeler, "semiconductor devices suitable for use in cryogenic environments", cryogenics (guildf)., vol. 14, no. 8, pp. 439–447, 1974. [12] e. s. schlig, "low-temperature operation of ge picosecond logic circuits", solid-state circuits, ieee j., vol. 3, no. 3, pp. 271–276, 1968. [13] f. h. gaensslen, v. l. rideout, e. j. walker, and j. j. walker, "very small mosfet’s for lowtemperature operation", ieee trans. electron devices, vol. 24, no. 3, pp. 218–229, 1977. [14] w. a. krull and j. c. lee, "demonstration of the benefits of soi for high temperature operation", in proceedings of the ieee sos/soi technology workshop, 1988, p. 69. [15] g. groeseneken, j.-p. colinge, h. e. maes, j. c. alderman, and s. holt, "temperature dependence of threshold voltage in thin-film soi mosfets", ieee electron device lett., vol. 11, no. 8, pp. 329–331, 1990. [16] t. h. tan and a. k. goel, "zero-temperature-coefficient biasing point of a fully depleted soi mosfet", microw. opt. technol. lett., vol. 37, no. 5, pp. 366–370, 2003. [17] f. s. shoucair, "analytical and experimental methods for zero-temperature-coefficient biasing of mos transistors", electron. lett., vol. 25, no. 17, pp. 1196 – 1198, 1989. [18] z. d. prijić, s. s. dimitrijev, and n. d. stojadinović, "the determination of zero temperature coefficient point in cmos transistors", microelectron. reliab., vol. 32, no. 6, pp. 769–773, jun. 1992. 404 s k mohapatra, k p pradhan, p k sahu [19] m. emam, j. c. tinoco, d. vanhoenacker-janvier, and j. p. raskin, "high-temperature dc and rf behaviors of partially-depleted soi mosfet transistors", solid. state. electron., vol. 52, no. 12, pp. 1924–1932, 2008. [20] a. a. osman, m. a. osman, n. s. dogan, and m. a. imam, "zero-temperature-coefficient biasing point of partially depleted soi mosfet’s", ieee trans. electron devices, vol. 42, no. 9, pp. 1709–1711, 1995. [21] z. d. prijić, s. s. dimitrijev, and n. d. stojadinović, "analysis of temperature dependence of cmos transistors’ threshold voltage", microelectron. reliab., vol. 31, no. 1, pp. 33–37, 1991. [22] z. prijić, z. pavlović, s. ristić, and n. stojadinović, "zero-temperature-coefficient (ztc) biasing of power vdmos transistors", electron. lett., vol. 29, no. 5, pp. 435–437, 1993. [23] b. gentinne, j. p. eggermont, and j. p. colinge, "performances of soi cmos ota combining ztc and gain-boosting techniques", electron. lett., vol. 31, no. 24, pp. 2092–2093, 1995. [24] m. el kaamouchi, m. s. moussa, j.-p. raskin, and d. vanhoenacker-janvier, "zero-temperaturecoefficient biasing point of 2.4-ghz lna in pd soi cmos technology", in proceedings of the european microwave conference, 2007, pp. 1101–1104. [25] d. flandre, l. demeus, v. dessard, a. viviani, b. gentinne, and j.-p. eggermont, "design and application of soi cmos otas for high-temperature environments", in proceedings of the 24th european solid-state circuits conference, esscirc ’98., 1998, pp. 404–407. [26] k. suzuki, t. tanaka, y. tosaka, h. horie, and y. arimoto, "scaling theory for double-gate soi mosfet’s", ieee trans. electron devices, vol. 40, no. 12, pp. 2326–2329, 1993. [27] c. h. wann, k. noda, t. tanaka, m. yoshida, and c. hu, "a comparative study of advanced mosfet concepts", ieee trans. electron devices, vol. 43, no. 10, pp. 1742–1753, 1996. [28] j. p. colinge, "multiple-gate soi mosfets", solid. state. electron., vol. 48, no. 6, pp. 897–905, 2004. [29] h. s. p. wong, "beyond the conventional transistor", ibm j. res. dev., vol. 46, no. 2, pp. 133–168, 2002. [30] p. k. sahu, s. k. mohapatra, k. p. pradhan, p. k. sahu, s. k. mohapatra, and k. p. pradhan, "impact of downscaling on analog/rf performance of sub-100nm gs-dg mosfet", j. microelectron. electron. components mater., vol. 44, no. 2, pp. 119–125, 2014. [31] p. k. sahu, s. k. mohapatra, and k. p. pradhan, "a study of sces and analog foms in gs-dgmosfet with lateral asymmetric channel doping", j. semicond. sci., vol. 13, no. 6, pp. 647–654, 2013. [32] s. k. mohapatra, k. p. pradhan, and p. k. sahu, "resolving the bias point for wide range of temperature applications in high-k/metal gate nanoscale dg-mosfet", facta univ. ser. electron. energ., vol. 27, no. 4, pp. 613–619, 2014. [33] s. k. mohapatra, k. p. pradhan, and p. k. sahu, "temperature dependence inflection point in ultrathin si directly on insulator (sdoi) mosfets: an influence to key performance metrics", superlattices microstruct., vol. 78, pp. 134–143, 2015. [34] p. k. sahu, s. k. mohapatra, and k. p. pradhan, "zero temperature-coefficient bias point over wide range of temperatures for single-and double-gate utb-soi n-mosfets with trapped charges", mater. sci. semicond. process., vol. 31, pp. 175–183, 2015. [35] v. a. sverdlov, t. j. walls, and k. k. likharev, "nanoscale silicon mosfets: a theoretical study", ieee trans. electron devices, vol. 50, no. 9, pp. 1926–1933, 2003. [36] c. r. manoj, m. nagpal, d. varghese, and v. r. rao, "device design and optimization considerations for bulk finfets", ieee trans. electron devices, vol. 55, no. 2, pp. 609–615, 2008. [37] a. kranti and g. a. armstrong, "device design considerations for nanoscale double and triple gate finfets", in proceedings of the ieee international soi conference, 2005, vol. 2005, pp. 96–98. [38] h. shang, l. chang, x. wang, m. rooks, y. zhang, b. to, k. babich, g. totir, y. sun, e. kiewra, m. ieong, and w. haensch, "investigation of finfet devices for 32nm technologies and beyond", in tech. dig. pap. symp. vlsi technol. , 2006. [39] b. ho, x. sun, c. shin, and t. liu, "design optimization of multigate bulk mosfets", ieee trans. electron devices, vol. 60, no. 1, pp. 28–33, 2013. [40] x. sun, v. moroz, n. damrongplasit, c. shin, and t. j. k. liu, "variation study of the planar groundplane bulk mosfet, soi finfet, and trigate bulk mosfet designs", ieee trans. electron devices, vol. 58, no. 10, pp. 3294–3299, 2011. ztc bias point of advanced fin based device: the importance and exploration 405 [41] m. g. c. de andrade, j. a. martino, m. aoulaiche, n. collaert, e. simoen, and c. claeys, "behavior of triple-gate bulk finfets with and without dtmos operation", solid. state. electron., vol. 71, pp. 63– 68, 2012. [42] k. p. pradhan, s. k. mohapatra, p. k. sahu, and d. k. behera, "impact of high-k gate dielectric on analog and rf performance of nanoscale dg-mosfet", microelectronics j., vol. 45, no. 2, pp. 144–151, 2014. [43] s. selberherr, analysis and simulation of semiconductor devices. 1984, pp. springer–verlag, wien– new york. [44] "the international technology roadmap for semiconductors", 2011. [45] c. lombardi, s. manzini, a. saporito, and m. vanzi, "a physically based mobility model for numerical simulation of nonplanar devices", ieee trans. comput. des. integr. circuits syst., vol. 7, no. 11, pp. 1164 – 1171, 1988. [46] w. shockley and w. t. read, "statistics of the recombination of holes and electrons", phys. rev., vol. 87, pp. 835–842, 1952. [47] r. n. hall, "electron-hole recombination in germanium", phys. rev., vol. 87, p. 387, 1952. development of an iot system facta universitatis series: electronics and energetics vol. 31, no 3, september 2018, pp. 343-366 https://doi.org/10.2298/fuee1803343s a comparative study of reliability for finfet  saleh shaheen, gady golan, moshe azoulay, joseph bernstein faculty of engineering, dept. of electrical engineering, ariel university, ariel, israel abstract. the continuous downscaling of cmos technologies over the last few decades resulted in higher integrated circuit (ic) density and performance. the emergence of finfet technology has brought with it the same reliability issues as standard cmos with the addition of a new prominent degradation mechanism. the same mechanisms still exist as for previous cmos devices, including bias temperature instability (bti), hot carrier degradation (hcd), electro-migration (em), and body effects. a new and equally important reliability issue for finfet is the self -heating, which is a crucial complication since thermal time-constant is generally much longer than the transistor switching times. finfet technology is the newest technological paradigm that has emerged in the past decade, as downscaling reached beyond 20 nm, which happens also to be the estimated mean free path of electrons at room temperature in silicon. as such, the reliability physics of finfet was modified in order to fit the newly developed transistor technology. this paper highlights the roles and impacts of these various effects and aging mechanisms on finfet transistors compared to planar transistors on the basic approach of the physics of failure mechanisms to fit to a comprehensive aging model. key words: finfet, reliability, cmos finfet, bti, hcd, electromigration, aging 1. introduction 1.1. cmos finfet transistors a fin field-effect transistor (finfet) is a tri-gate transistor built on a substrate where the gate is placed on three sides of the channel or wrapped around the channel, forming a double gate structure. these devices have been given the generic name "finfets" because the source/drain region forms fins on the silicon surface. finfet devices exhibit significantly faster switching times and higher current density than the mainstream in the planner transistors technology. the term finfet (fin field effect transistor) was coined in 2001 by the university of california, berkeley [1]. finfet devices are 3d transistors, where the current flows through a thin fin wrapped by a metal gate. in this structure, channel inversion is created in the three walls of the fin, which increases the gate control over the channel and reduces the short channel effects [2]. finfets present lower threshold voltage variations than received february 8, 2018 corresponding author: gady golan faculty of engineering, dept. of electrical engineering, ariel university, ariel 40700, israel (e-mail: gadygolan@gmail.com) https://en.wikipedia.org/wiki/double-gate_transistor https://en.wikipedia.org/wiki/wafer_(electronics) https://en.wikipedia.org/wiki/cmos mailto:gadygolan@gmail.com 344 s. shaheen, g. golan, m. azoulay, j. bernstein planar transistors due to its undoped or slightly doped channel that reduces the impact of random doping fluctuations (rdf). on the other hand, thinner fins also increase the series resistance of the source/drain region due to its small transversal area, and limits the driving current of the finfet. this reduction in current affects the reliability which will be discussed in the following sections. 1.2. reliability issues in deep sub-micron technologies as previously mentioned, the semiconductor industry has witnessed remarkable growth and achievements in ic manufacturing through significant scaling in transistor dimensions. such scaling has not only made the ic more compact and dense, but also enhanced its performance without an increase in its power consumption as long as the chip area was kept constant. although the vision of gordon moore in 1965 that the complexities of an ic will be approximately doubled every two years seemed to be a dream at that time, it came true over four decades. this resulted in the production of more complex circuits [3]. in 2018, there are more than billion transistors in one single processor die! thus, this high integration density has to be accompanied by tough efforts to increase the ic reliability, since the failure of several transistors in a circuit can lead to a complete failure of the whole system. despite the fact that there were some claims in the semiconductor industry of hitting a ―red brick‖ wall at100 nm technology node in 1998 [4], leading edge research and development is currently working towards developing of transistors even smaller than 10nm technology node and beyond [5]. as with the continuous downscaling of device dimensions, variations in transistor parameters are increasing drastically and lead to unexpected reliability issues [6, 7]. these issues are essentially classified to ―time-zero‖ variability issues [8] such as line-edge roughness (ler), random dopant fluctuations (rdfs), metal gate granularity and body thickness variation, that causes intra-die variations during manufacturing process, and ―time-dependent‖ variability issues that are considered to be a major source for performance degradation of scaled devices over their lifetime, such as negative bias temperature instability (nbti) [9], hot carrier injection (hci) [10], and time-dependent dielectric breakdown (tddb) [11] electro-migration, self-heating and body effects, these degradation mechanisms are caused by the formation of charged traps within the gate oxide layer due to the high electric field and temperature that lead to a change in the device parameters (e.g. threshold voltage, carrier mobility, drain current) over time , depending on the operating conditions and the workload over lifetime. therefore, these issues degrade the reliability of the scaled devices and eventually may lead to an ic failure, when the variations reach a certain limit. an example to demonstrate the impact of variability on the scaled devices, are evident in downscaling of technologies. variation can reach up to 50% of vth in advanced technology [12], which strongly affects sram functionality and pose a major challenge for the sram design. reliability of digital integrated circuits has become one of the critical challenges at deep sub-micron (dsm) semiconductor technologies. researchers, nowadays, are studying these reliability issues at various levels such as design, process, transistor, and circuit. they also argue that these time-dependent mechanisms can be best described in terms of an ensemble of individual defects and their time, voltage, and temperature dependent properties that can be modeled and inserted into a circuit simulation, and thus, enabling reliability awareness at design [13], as will be discussed in the following paragraphs. in fact, the simulation and analysis of aging effects at higher design levels are basically difficult, since the a comparative study of reliability for finfet 345 degradation rate depends on operating conditions and workloads over the lifetime. these factors are often unknown during the design of a circuit, since the change of workloads applied to a circuit will lead to various amounts of performance degradation, and thus, impose dramatic challenges to the design of digital integrated circuits. in order to improve design predictability and support robust design it is necessary to develop appropriate techniques that are efficiently able to predict the aging effects in existing and future technologies. in this paper, our objective is to provide a detailed and accurate study for predicting aging effects in finfet compared to planar transistors, due to few of the above mentioned time-dependent phenomena, like nbti mechanism, hot carrier, self heat, body effects and finally electromigration. the rest of this paper is organized as follows: paragraph 2 gives the background and physical concepts behind nbti phenomenon and hot carrier, self heat, and finally electro-migration. the mechanisms are explained and the ways of modeling this degradation mechanism in the transistor and gate levels are explained. a new multiple temperature operational life test (mtol) model [14] is discussed as well. paragraph 3 presents a comprehensive analysis of the main differences between finfet transistor and planner transistor from the reliability perspective and presents detailed finfet transistors reliability and aging analysis. paragraph 4 presents a comparative discussion, putting it all together. finally, paragraph 5 summarizes the work that has been done and propose ideas for future improved reliability for finfet devices. 2. physical mechanisms 2.1. multiple-temperature operational life and fit reliability device simulators have become an integral part of the vlsi design process. these simulators successfully model the most significant physical failure mechanisms, such as negative bias temperature instability (nbti), electro-migration (em) and hot carrier injection (hci) in modern electronic devices. these mechanisms are modeled throughout the circuit design process, so that the system will operate for a minimum expected useful life. modern chips are composed of tens or hundreds of millions of transistors. hence, the chip level reliability prediction methods are mostly statistical. chip level reliability prediction tools, today, model the failure probability of the chips at the end of life, when the known wearout mechanisms are expected to dominate. however, modern prediction tools do not predict the random, post burn-in, failure rate that would be seen in the field [14-17]. chip and packaged system reliability is still measured by a failure unit, also defined as the failure-in-time (fit). the fit is a measure for the constant rate function (poisson model) failure rate, λ. this model is time-independent, and the failure rate in fit is defined as the number of expected device failures per billion part hours. a fit is assigned for each component multiplied by the number of devices in a system for an approximation of the expected system reliability. the semiconductor industry provides an expected fit for every product that, based on operation within the specified conditions of voltage, frequency, heat dissipation and more. hence, a system reliability model is a prediction of the expected mean time between failures (mtbf) for an entire system as the sum of the inverse fit rate for every component. a fit is defined in terms of an acceleration factor, af, seen in equation 1 below: (1) 346 s. shaheen, g. golan, m. azoulay, j. bernstein where: #failures and #tested are the number of actual failures that occurred as a fraction of the total number of units subjected to an accelerated test. the acceleration factor, af, has to be provided by the manufacturer, since only they know the failure mechanisms that are being accelerated in the final high temperature operating life (htol) test. this factor is generally based on a company proprietary variant of the mil-hdbk-217 approach for accelerated life testing. the real task of reliability modeling, therefore, is to choose an appropriate value for af based on the physics of the dominant failure mechanisms that would occur in the field for the device. the key innovation of the multiple-temperature operational life(mtol) method is its success in separating different failure mechanisms in devices in such a way that actual reliability prediction scan be made for any user defined operating conditions. this methodology is opposed to the common approach for assessing device reliability today, using high temperature operating life (htol) testing, which is based on the assumption that just one dominant failure mechanism is acting on the device. however, it is known that multiple failure mechanisms act on the device simultaneously. the new approach, mtol, deals with this issue, this method predicts the reliability of electronic components by combining the failure in time (fit) of multiple failure mechanisms. degradation curves are generated for the components exposed to the accelerated testing at several different temperatures and core stress voltage. the recent published data [18] clearly reveals that different failure mechanisms act on the components at different regimes of operation causing different mechanisms to dominate, depending on the stress and the particular technology. a linear matrix solution, allows the failure rate of each separate mechanism to be combined linearly to calculate the actual reliability as measured in fit of the system based on the physics of degradation at specific operating conditions. in this paper, we present the most significant physical failure mechanisms in modern electronic devices, such as negative bias temperature instability (nbti), electro-migration (em) and hot carrier injection (hci) but we will not present the mtol analysis, due to the fact that we present the theoretical aspects of physical reliability, yet we will present the mtol analysis on finfet transistors that may be implemented in the near future. 2.2. the physical mechanism behind bti bias temperature instability (bti) is a time-dependent degradation mechanism, it has been known since 1966 [7] and a model for understanding its effects was first proposed in 1977. bti has emerged as a key reliability concern due to its increasingly negative impact on performance of modern electronic devices. bti effects worsen as a transistor ages, and lead to severe shifts of important transistor parameters. therefore, understanding the impacts of bti degradation is of primary importance for current and near future cmos technologies. the continuous mosfet miniaturization trends (i.e., aggressive oxide thickness scaling) resulted in higher oxide fields and temperature [19]. consequently, more charge traps are able to tunnel through the gate oxide. these traps capture some of the charged carriers which are responsible for the current flow between source and drain. therefore, it results in the formation of a narrower transistor channel due to this charge loss. this means that less current can flow through the device and consequently, the device performance will degrade. these effects show up themselves at the circuit level by increasing circuit delays and in turn circuit timing errors. in order to maintain the drain current to its pre-degradation state, a higher voltage bias needs to be applied on the gate. https://www.researchgate.net/publication/224525678_negative_bias_stress_of_mos_devices_at_high_electric_fields_and_degradation_of_mnos_devices_j_appl_phys?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== a comparative study of reliability for finfet 347 therefore, a higher voltage will be needed before the transistor begins to conduct. this means that the threshold voltage (vth) increases significantly over time. the threshold voltage shift (∆vth) is accelerated by elevated temperature or supplied voltage and it is a direct measure of the device degradation and is widely used in the literature to evaluate bti impacts [20, 21]. bti mechanism, as illustrated below in figure 1, occurs in two phases, firstly, the transistor is in stress phase when the voltage vgs is applied to the gate over a period of time. during this phase, charged traps are generated at the gate oxide layer and the transistor threshold voltage increases (degrades). secondly, when the stress voltage is removed, the transistor is in recovery phase. during the recovery phase, trapped charges are released and the threshold voltage partially recovers to the level that was prior to the stress. the transistor enters into stress and recovery phases alternately, when the input is dynamic. fig. 1 (a) threshold voltage shift due to bti aging, (b) two phases of bti. the transistor does not fully recover thus the amount of bti degradation depends on the stress history that is reflected at the duty factor and calculated by the device stress and relaxation periods. devices in arithmetic units and memory circuits tend to present an un-balanced duty factor, while devices in clock circuitry are an example of duty cycle factor of 50%. the impact of bti is observed at both nmos and pmos transistors; both are susceptible to positive bias temperature instability (pbti) and negative bias temperature instability (nbti) respectively. hard et al. [22] have analyzed the impact of bti in four scenarios: 1. nmos under negative gate bias, 2. nmos under positive bias, 3. pmos under negative bias and 4. pmos under positive bias. the study has clearly shown that pmos devices are more susceptible to bti, regardless of negative or positive bias. it also proves that pmos under negative bias is the case that presents the largest threshold voltage shift. it is unfortunate, since in digital circuits pmos devices are negatively biased. this is the reason why bti is often referred to as nbti which is attributed to threshold voltage shifts in pmos devices only. therefore, most of published data [23, 24] are focused only to study the impact of nbti on the circuit reliability. in the last decade, accurately modeling of bti has become a major concern for industry. several approaches have been proposed to understand the origin of this phenomenon and predict its impacts, while there is a good agreement on the fact that bti is caused due to the generation of traps in oxide layer when bias is applied at the gate. in addition, the bti degradation impact can be directly measured as a shift in threshold voltage. the acceleration factor (af) of the nbti is presented below in equation 2 [18]: 348 s. shaheen, g. golan, m. azoulay, j. bernstein f-n ti ( n ti( stress use)) * a ( use stress )+ (2) where: tuse  use temperature in kelvin tstress  life test stress temperature in kelvin 𝐊 = 8.63 [ev/k] – boltzmann's constant ea  activation energy vuse  use voltage vstress  life test stress voltage nbti  acceleration factor for nbti the next paragraph gives an overview of the developed models for nbti mechanism at the transistor-level and the reasons behind the choice of the used model to carry out the research. moreover, bti impacts at the gate-level are also presented. 2.3. the physical mechanism behind hcd a physical understanding of hcd and the respective models are briefly introduced. for semiconductors in thermal equilibrium, electrons and holes continually absorb and emit acoustical phonons (low-frequency lattice vibrations), resulting in an average energy gain of zero. such electrons have kinetic energy (e) that are normally slightly higher than that of the conduction band edge (ec) by an amount ktr (tr is room temperature). similarly, for holes, e is slightly less than the valence band edge (ev) by ktr. in the case of low electrical fields, the carrier's velocity is field-independent and ktr is only 0.025 ev ; which is small compared to the carriers kinetic energy corresponding to ec and ev. however, if the electrical field is very high (for example, 100 kv/cm), the carriers gain more energy than they lose by scattering. such accelerated electrons have energies of ec + kte, where te is an effective temperature such that kte >ktr. with effective temperatures (~ec /kt) of tens of thousands of degrees kelvin, these electrons are at the very top of the fermi distribution and are known as hot electrons. while a mosfet is in active operation, if the gate voltage is comparable to or lower than vds, the inversion layer is much stronger on the source side than the drain side and the voltage drops due to the channel current is concentrated on the drain side (if vd>vs). the field near this side can be so high that carriers can gain enough energy between two scattering events to become hot carriers. the majority of these hot carriers simply continue toward the drain, but a small number of them gain enough energy to generate electrons and holes by impact ionization. in the n-channel mosfet (n-mosfet), the vast majority of the generated holes are collected by the substrate and give rise to the substrate current (isub) and the generated electrons enhance the drain current (id). photon emission might also occur during the generation of the hot carrier in the drain. some of the hot carriers with enough energy have been calculated (approximately 3.2 ev for electrons and 4.7 ev for holes [25]) and can surmount the energy barrier at the si-sio2 interface and be injected into the oxide, with a small gate current (ig). some energetic injected carriers might break some s-h or similar weak bonds in the oxide or at the si-sio2 interface. if the hot carriers injection last long enough, the trapped charge or generated defects will permanently modify the electric field at the si-sio2 interface, and hence, the electrical characteristics of the mosfet. a comparative study of reliability for finfet 349 hot carrier injection mechanisms hot carrier injection mechanisms according to takeda [26], are three main types of hot carrier injection modes: 1. channel hot electron (che) injection. 2. drain avalanche hot carrier (dahc) injection. 3. secondary generated hot electron (sghe) injection. che injection is due to the escape of ―lucky‖ electrons from the channel, causing a significant degradation of the oxide and the si-sio2 interface, especially at low temperature (77 k) [27]. on the other hand, dahc injection results in both electrons and holes gate currents due to impact ionization, giving rise to the most severe degradation around room temperature. sghe injection is due to minority carriers from secondary impact ionization or, more likely, bremsstrahlung radiation, and becomes a problem in ultra-small metal oxide semiconductor (mos) devices. fowler–nordheim tunneling and direct tunneling might also cause hot carrier injection. for deep sub-micrometer devices, it is important to attempt for the effects resulting from combinations in some or all of these injection processes. channel hot electron (che) injection: the che injection occurs when the gate voltage (vg) is comparable to the drain voltage (vd) (in n-mosfet). the gate current (ig) rises as vg initially increases, reaching to a maximum peak when vg is roughly equal to the drain-source potential vd, and drops thereafter. there are two reasons that cause the ig to increase. first, the inversion charges in the channel increases, so that more electrons are present for injection into the oxide. second, the stronger influence of the vertical electric field in the oxide prevents electrons in the oxide from detrapping and drifting back into the channel. it has been reported [28] that if an n-channel mosfet is operating at vg = vd the conditions would be optimum for che injection of ―lucky electrons.‖ such electrons gain sufficient energy to surmount the si-sio2 barrier without suffering an energy losing collision in the channel. in many cases, this gate current is responsible for device degradation as a result of carrier trapping. no gate current can be measured for vg to improve transistor performance [46], but can affect the interface quality. additionally, top corners can enhance local electric fields [47] and the vertical sidewalls require special integration schemes to ensure appropriate gate [48] and junction formation. perhaps most critically, the fin architecture limits heat dissipation from the channel, which can lead to increased local temperatures [49]. bti in tri-gate despite the crystal orientation and corners, multiple authors have shown that bti in trigate is matched to planar devices [50, 51, and 52]. for example, pmos nbti is matched to planar for both degradation and recovery. this indicates that the same basic modeling formulation can be extended from planar devices and applied to tri-gate. with a potential dependence on fin height and width, the bti variation could be expected to be influenced by the vertical tri-gate architecture. however, data from intel‘s 22nm technology indicate that the variability characteristics are matched between planar and tri-gate [50]. for example, the exponential distribution characteristic parameter for the average vth shift per trap, which indicates that the behavior in tri-gate devices is identical to that of planar. hot carrier in tri-gate hot carrier degradation in tri-gate devices is known to be complicated by dependences on tri-gate features such as fin width, field profiles, and junction formation [53,54]. further, the tri-gate architecture itself can increase degradation due to increased likelihood that the gate will capture energetic channel carriers. as with planar devices, the damage is expected to be localized near the drain end of the channel, where fields are the highest. tri-gate devices can enhance this localization due to the improved control over short channel effects, 356 s. shaheen, g. golan, m. azoulay, j. bernstein which effectively means that the gate better controls the potential in the channel, leaving more of the drain-source voltage drop at the drain end of the channel. the effect of this localization is reflected in the degradation characteristics, where, the ids degradation is measured at different applied biases after hot carrier stress. during this monitoring, a constant high gate bias is applied and the ids degradation is measured at different source or drain biases. as the monitor drain voltage increases from low to high, the measured degradation decreases. this can be interpreted as a reduction of interaction between the channel electrons and gate oxide damage at the drain end of the channel as the depletion region increases. conversely, as the source voltage is increased, the measured degradation increases, which indicates that a greater fraction of the channel is contributing to the measured degradation as the source-side depletion region increases. as a result, the degradation impact to a circuit will depend on the bias conditions during operation. therefore, the aging formula needs to be extended to include a dependence on the playback bias: fig. 2 the measured degradation after nmos hc stress is observed to be a strong function of applied bias during playback. as the drain voltage increases, measured degradation decrease. conversely, as the source voltage increases, the measured degradation increases. both effects are due to damage localization at the drain end of the channel. the data come from intel‘s 14nm tri-gate technology, and the applied gate voltage is constant for all biases. a further complication of hot carrier degradation is the tendency for ―minority carriers‖ to be injected into the gate, causing an increase in drive current rather than degradation. for example, a pmos device in a stress condition of high drain voltage but low gate voltage will have fields favoring the injection of electrons into the gate. this can cause a |vt| reduction and drive current increase. a recent example of this behavior in tri-gate devices is shown in fig. 2 where a pmos device was stressed with drain-high and gate-low, and the drive current is seen to increase after stress [54]. as a consequence of this mechanism, a general aging model will need to include a term for this minority carrier injection as indicated in equation 14. here, the mechanisms are assumed to be independent and therefore additive, though the actual physical picture is likely far more complicated. %id = fmajority (stress, ec, playback) ( ) (14) the discrete trap behavior from hot carrier degradation is expected to have a similar influence on variation as bti. as such, the variation can be modeled with the same variation formulation as bti [55]. however, as discussed in ref. [53], hot carrier degradation depends on many features of trigate device, so the variation magnitude may be affected as well. recent evaluations suggest that this may be the case, though additional research is needed in this area [54]. a comparative study of reliability for finfet 357 self-heat in tri-gate one of the most important aging-related mechanisms in the tri-gate device is the channel temperature during operation. as discussed in ref. [47], the channel temperature may be increased in tri-gate devices due to the reduced heat conduction to the substrate, as shown below in fig.3 the channel temperature is known to depend on the size and layout of the transistors. as a result, the total channel temperature must be calculated as the combination of the ambient temperature plus a self-heat function of both power dissipation and transistor layout. fig. 3 tri-gate devices have a constricted path for heat conduction from the channel to the substrate. as a result, the local temperature in the channel can increase above planar devices. [49] a critical complication from self-heating is that the thermal time-constant is generally much longer than transistor switching times in modern technologies [54]. as a result, the channel will heat up during a transistor switching event (the only time a transistor in digital operation dissipates significant power) and then this generated self-heat will persist long after the switching event itself. as a result, the temperature at any given time will depend on the activity history of the device, and the channel temperature needs to be expressed as equation 15 below: t = f (power, layout, activity) (15) this is of critical importance since it violates the quasi-static approximation on which the entire aging model is based. for a repeating waveform that switches with some regularity, an average temperature can be obtained for the entire waveform and a net aging for the waveform can be calculated. however, if the waveform is irregular then the quasistatic approximation breaks down, and an explicit evaluation of the aging at each point in the waveform will need to be evaluated. a further modeling challenge from the channel self-heat effect is from the empirical calibration standpoint. during standard dc hot carrier stress on a device, the channel temperature can increase far beyond conditions found during normal switching operations due to the total power dissipated. as a result, evaluation of the temperature dependence for the hot carrier model must take into account both the ambient and self-heat temperature when extracting the temperature dependence. furthermore, a particular concern is that the temperature dependence deviates from expected behavior at very high channel temperatures, which can lead to overly optimistic predictions of aging behavior at regular use conditions [55]. body effects in tri-gate one of the advantages of tri-gate devices is the excellent gate control over the channel which renders the device less susceptible to body-bias influences. for example, figures 4 and 358 s. shaheen, g. golan, m. azoulay, j. bernstein 5 show the nbti at pmos [50] and hc at nmos [56] sensitivity to body bias, which only affects the aging at very high body voltages. while the behavior observed is well beyond normal operating voltages, there are some stacked configurations where devices are placed on high voltage supplies and therefore the body bias effect may need to be considered. in these cases, the aging model formulation will need to be extended to include a dependence on the body bias during stress. to accurately include this body bias effect, the underlying physics needs to be comprehended. the body bias can influence the aging either through modulating existing mechanisms by altering channel fields or by introducing a completely new mechanism such as substrate hot carrier injection. depending on the underlying mechanism, the body bias will need to be added to the model either as a completely separate additive component or as a modulation of the existing terms. it is beyond the scope of this work to detail the exact physics involved with these effects in tri-gate devices, and for the sake of notational simplicity in the equations shown here, the body bias is assumed to simply modulate existing mechanisms. fig. 4 pmos bti in tri-gate devices is generally insensitive to body-bias until biases are applied far outside normal operating voltages. [48] fig. 5 nmos hc in tri-gate devices is relatively immune to body-bias effects, but at a high voltage threshold, the degradation can increase dramatically. [55] a feature unique to tri-gate is the possibility of traps forming in the sub-fin oxide, especially after high body-bias stress. depending on polarity, these traps can form either a parasitic conduction path or pinch off sub-fin leakage. for simplicity, these effects can be included in the aging model as terms for either the body bias aging influence or the minority carrier injection term. however, the physics is likely more complicated and a more precise model will need to have explicit terms and interactions included. a comparative study of reliability for finfet 359 electromigration in tri-gate the overall em challenges due to technology scaling come from the widening of the gap in current density limits for metal lines between the design needs and the technology capability. the current limit needed by the circuit/chip design increases rapidly from technology node to node, while the metallization process struggles to maintain the constant current carrying capability for the metal lines without invoking major innovations. the major driving forces for technology scaling include enhancing the chip performance and reducing the cost per device. technology scaling includes physical scaling, material scaling, electrical scaling and new integration schemes. physical scaling refers to dimensional shrink [57]. one obvious benefit of the physical scaling is to allow smaller devices and denser designs (more devices per chip area). this is essential to packing more functions, and more importantly to have more chips per wafer. the technology scaling has a direct undesirable consequence which is the increase of the overall process cost. to counter this cost increase for processing, packing in more functions per chip and producing more chips per wafer allows the cost per function and the cost per chip to keep decreasing, though the cost per wafer may increase from technology node to node. materials scaling refers to using materials which are more efficient or preferable for performance enhancement. one example from front end of line (feol) is to replace sio2 based material with materials having higher dielectric constant (k), such as hfo2 based material for gate dielectric. in back end of line (beol), the latency from the interconnect rc effect has become a major contributor to the overall performance degradation. to lower the conductor resistance, the al based metallization has been replaced with cu based (higher electric conductivity) metallization since the 180nm technology node. materials with lower k values have been introduced as interand intrametal dielectrics (ild) since the 130nm technology node to alleviate the interconnect capacitance effect. electrical scaling refers to the operating voltage (vdd) and power reduction. lowering the power at chip level has become a major desire for advanced applications. lower vdd can directly result in lower power, lower electric field, and lower current, which has major benefits for time dependent dielectric breakdown (tddb) and em reliability. however, due to device leakage concerns, and driving for faster speed (performance), vdd has not been scaled as fast as the dimensional scaling. integration scaling refers to the new integration schemes or innovations to enhance performance and pack more devices. this includes two very different integration aspects: (1) the interconnect fabrication/processing integration innovation driven by the scaling; and (2) chip or system level integration. the trend for the chip and system level integration scaling is growing from 2-d to 3-d schemes. the examples include adopting finfets in feol[58], and chip stacking through silicon vias (tsv) [59] for beol and packaging. most of these scaling aspects are not in favor of the technology reliability, they bring various new reliability challenges. however, these scaling aspects are not in favor of the technology reliability, they bring various new reliability challenges. from the circuit/chip design side, to keep the performance scaling following the so called moore‘s law, on one hand, the circuits and chips need to be smaller in size, or aggressively shrinking in dimensions both horizontally and vertically. on the other hand, the operating voltage scales at a much slower rate. the current density to flowing through a metal line may be computed as follows equation 16 as below: j = (16) 360 s. shaheen, g. golan, m. azoulay, j. bernstein where: c stands for capacitance, w and h are the metal line width and height; vdd is the supply voltage to devices, "f "is the clock frequency and "p" is the device switching factor. generally, w and h scale by a factor of 0.7, or the electric current conducting cross sectional area (w * h) reduces by about 50% for each technology node. for cu interconnects, from 180nm node to 10nm node, the cu cross sectional area for a minimum width metal line has reduced from 0.03 lm 2 to 0.0015 lm 2 , a 95% reduction. on the other hand, the operating voltage (vdd) is only scaled down from 1.8 v to 0.9 v, merely 50% reduction. the net effect is 10 times increase of (vdd/ w h) ratio. scaling for performance also drives higher and higher clock frequency "f", and switching factor "p". all these factors point to that higher and higher "j" is needed for circuit and chip design. in addition to the physical scaling (dimensional shrink), the material scaling impact on em reliability can also be significant. there are two aspects of this impact, direct impact from the new material properties and the indirect impact from the process integration changes driven by accommodating the new material properties .replacing cu with al gave a significant boost to the interconnect em capability [60], due to cu‘s higher melting point (1083 lc vs 660 lc of al) and higher em activation energy (0.9 ev for cu vs 0.8 ev for al). however, the subsequent aggressive dimensional shrink from technology scaling has led to rapid em performance degradation for cu interconnects. this is because the decrease of the critical void volume to cause em failure and the increase of the cu drift velocity. em failure time may be expressed as a function of the critical void volume and cu drift velocity [61, 62] as equation 17: tfail = critical d (17) another important factor to increase the interconnect current carrying capability is to take advantage of the short length benefit. from equation 18 below: ( ) (18) as the em process proceeds, a higher and higher backflow stress gradient (ω∆σ/∆l) will be built up at the anode to slow down the cu drift rate, vd. when this backflow stress gradient becomes sufficiently high, it can completely balance the driving force (z *epj), and makes the net cu mass flow to zero. at this steady state, equation 19can be written as: (jl)c = (19) (jl)c is called the threshold jl product [63]. in theory, if the jl in the interconnect is below the threshold product (jl)c, the interconnect should not suffer em damage. even when the jl product is higher than (jl)c to some extent, the em damage can occur but with longer time to fail, based on the following modified black equation 20 [64]. mttf = ( c) ( ) (20) max stress ( 50stress lifetime ) * ( use stress )+ where: mttf is the median time to fail (i.e. t50), a is geometry and material related constant, jc is the threshold current density. all the mentioned equations serve as the basis for the fact that shorter lines can have higher maximum allowed current densities. taking advantage of a comparative study of reliability for finfet 361 this feature, i.e. making short interconnections, has been proven to be powerful in circuit design to solve some of the em challenges. another advantage of utilizing short length benefit for em is the low temperature sensitivity. if some devices are known to have high power, high frequency and high activity factors, the local interconnect temperature has a potential to be much higher than the nominal junction temperature due to joule heating. as shown in equation 20, the maximum allowed current density decreases exponentially with the interconnect temperature for the regular em process. a severe jmax de-rating may be needed for such circuits to account for the local temperature rise. using wider metal lines, which only increase the current linearly with line width, may not provide sufficient relief to compensate for the jmax de-rating. under such circumstances, taking advantage of the short length benefit becomes essential to overcome the local high temperature issues. since (jl)c has very low sensitivity to temperature [65], as long as the jl is sufficiently below (jl)c, the em reliability will not decrease much with the local joule heating. breaking the long interconnect into short segments to take advantage of the short length benefit may not always be feasible due to spacing limitations and resistance sensitivity. to allow the backflow stress to build, physical barriers at both cathode and anode of the interconnect is required. there are alternative ways to establish some pseudo-barriers to enable local backflow stress build up, and form some short length effects [66, 67]. one example is to have blocking islands on top of a metal line or using multiple levels of metal lines with period of vias or bar vias connecting them [68].those blocks on the cu surface may not create a complete physical barrier for cu diffusion, since they have a direct metal to metal interface in the blocking islands, the cu diffusion along those local interface areas will be much slower, and some degree of backflow stress gradient will be built up to create partial short length effects. one of the major challenges for short length em benefit applications is the line length definition [66]. actual circuits are often more complicated than the simple metal line segment with vias at each end. they often have fingers, branches/wings, passive reservoirs, passing vias, dropdowns and width transitions. in such cases, the line length and (jl)c to be used for the short length benefit calculations become very challenging, not only to the eda tools, but also for the design engineers. appropriate engineering judgments are often sought to solve these issues. due to the variability control and the liner thinning, lower (jl)c values are expected for the future technologies. furthermore, the distribution complexity should be closely watched as well when applying short length benefits for circuit designs. 4. comparative discussion the discussion so far was focused on the details of each independent mechanism and its influence on aging. in real circuits, devices will experience a variety of biases, temperatures, activity, and aging conditions, as illustrated in fig.6 below. in this type of generalized waveform, interactions between the aging mechanisms become important. one of the more challenging modeling complications from these interactions are the recovery effects. for example, bti recovery is more sensitive to the applied bias. therefore, as a circuit switches to a low voltage state either in analog operation or from dynamic voltage power management schemes, the transistors will undergo recovery differently. 362 s. shaheen, g. golan, m. azoulay, j. bernstein fig. 6 devices in circuits may see a wide variety of biases with associated aging mechanisms. the persistent self-heat effect makes the aging sensitive to history, modulating the aging and recovery behavior in regions of the waveform after sections of high self-heat generation. additionally, recovery is known to be sensitive to temperature, with more recovery occurring at higher temperatures [68]. modeling this effect is further complicated by the persistent self-heat behavior, so that within a general waveform the temperature during a recovery phase will depend on the immediate history of the waveform. one final challenge for recovery modeling is the interaction with minority carrier injection during hot carrier stress. these minority carriers can passivate bti traps enhancing recovery. for example, in pmos nbti a hole trap may be passivated by an injected electron during a subsequent hot carrier stress phase. comprehending these recovery interactions in a model requires that the recovery term will be updated to include a dependence on bias, temperature, activity, and minority carrier injection. putting all of these effects into a single equation depends on the physics involved, but a simplistic additive form is summarized below in 21: ( ( ) ( ) ) + ( ( ) ( ) ) (21) + ( ( ) ( ) ) in this summarizing equation, a key feature is still missing, which is any interaction between bti and hot carriers. this is an area that still requires significant research, but the basic issue hinges on whether the traps associated with bti and hc are independent or have some interaction. for simplicity, the traps are often assumed to be separate and independent based on their location. however, recent work has shown that there is a strong interaction between the mechanisms in some cases, so that the independent approximation may lead to overly conservative predictions of total aging [69]. this interaction poses further challenges for aging since there may be sequence dependence to the total aging, as indicated in fig. 7 a comparative study of reliability for finfet 363 below [69]. as a result, the net aging after a general waveform will not necessarily match a quasistatic integration of the waveform, but rather a more detailed model is needed for the recovery of the degradation at each point in time. the solutions to the em challenges due to technology scaling have relied on various innovations from all aspects, including process development, circuit design and chip/system integrations. though these innovations have been proven successfully, they have been projected more and more difficulties for the future technologies. from process development point of view, any innovative schemes to enhance the em performance will have to overcome the challenges of line/via electrical resistance, cu grain growth and variability. the rapid resistance increase of the interconnect has become one of the bottle necks and diminished the performance gain from technology scaling. for the advanced cu interconnect, historically, all process integration schemes to boost em reliability came with a certain degree of sacrifice of the electrical resistance. to slow down the resistance increase trend with scaling, new integration measures are needed not only to minimize the cu resistivity deterioration, but also to maximize the cu volume fraction in the trenches and vias. while the former metal technologies faces the challenges of the fundamental physics (size effect from electron diffraction), the later has significant potential implications with reliability and manufacturability. certain liner thickness in the trenches and via has been proven to be critical for good cu fill and slow cu mass flow along the sidewalls. a new liner deposition process is needed to overcome these challenges. though technological solutions can and will be developed to meet these challenges discussed above, the real potential barrier ahead of the technology scaling could be the economics, i.e. whether these technology solutions can still provide viable economic benefits. rather than developing costly technology solutions to cover ‗‗universal‘‘ applications, an approach to tailor the technology for specifically targeted applications and reliability may have to be adopted. therefore, a co-optimization of process development along with circuit and chip design becomes essential .circuit and chip designers will need to actively participate in the technology definition and process window evaluations. on one hand, the circuit and chip design teams need to understand the process capability and take advantage of the process strength and avoid the process weakness. on the other hand, the process development team knows what the critical needs are from circuit and chip designs and optimizes the process windows around those critical constructs of circuit and chip designs. 5. conclusions and future work conclusions in scaled tri-gate devices, bti, recovery, hot carrier and em continue to play a significant role in aging. modeling these effects can be accomplished with a similar modeling framework as methods established for planar devices. however, in addition to these primary aging fig. 7 aging after bti and hc is observed to depend on the sequence of stresses, indicating both an interaction between the mechanisms as well as a history dependence. [69] 364 s. shaheen, g. golan, m. azoulay, j. bernstein mechanisms additional phenomenon need to be included in any aging model general enough to capture the arbitrary waveforms found in real circuit use. mechanisms such as self-heat, minority carrier injection, body bias effects, bti/hc interactions, and recovery dependence on bias, temperature and activity all need to be included in the model. in the most limiting cases, these effects will violate the fundamental quasistatic approximation for many simple aging models, which will require restructuring the basic model formulation. technology scaling results in severe em challenges to the advanced interconnect. to balance the em reliability with performance, cost and cycle time, joint efforts are needed from all aspects, including process development, manufacturing, circuit designs and chip integration. while innovative process integration schemes are essential to enhance the interconnect current carrying capabilities, the robust circuit design and chip level budgeting are also important to make a product with high em reliability and optimized performance. nbti and hot carrier and em and aging are the most critical challenges for the future of semiconductor industry. they all affects the overall reliability of nano-scaled circuits and potentially causes system failures. being able to predict all the mentioned mechanisms degradations crucial for the development and long-term success of novel transistor structures such as the finfets. yet to be explored are: 1. finfets evaluation of the performance degradation on levels of abstraction such as processor-level or system-level. for that, new methodologies are required for predicting aging behavior such as dynamic reliability management (drm) techniques for new finfets devices (7nm and below). 2. studying of mitigation techniques for nbti aging effects for finfets. mitigation designates any method of limiting or controlling bti and its impacts on innovative electronic devices. currently, a number of research projects are conducted to develop fully automated schemes that are able to eliminate bti effects with little or no trade-offs in terms of performance, power consumption or costs. 3. extending the reliability-aware digital flow to cover statistical static timing analysis (ssta) to improve the accuracy of aging predictions. in reality, the distributions of logic gates in a circuit are correlated depending on their statistical properties. to obtain the information of path timing degradation, statistical timing analysis techniques to handle this correlation should be incorporated. acknowledgement: sponsored by us dept. of defense (onr and afosr). references [1] finfet modeling for ic simulation and design: using the bsim-cmg standard 114–117, april 19, 2001. [2] s.-h. oh, . monroe, j.m. hergenrother, ―analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate mosfets,‖ieee electron device letters, vol. 21, no. 9, 445447, 2000. [3] g. e. moore, ―cramming more components onto integrated circuits,‖ proc. of electronics, vol. 38, 114–117, april 19, 1965. [4] s. thompson, p. packan, and m. ohr, ―mos scaling: transistor challenges for the 21st century,‖ intel technology journal, vol. 2, pp. 1–19, 1998. [5] k. j. kuhn, ―cmos scaling for the 22nm node and beyond: device physics andtechnology,‖ in proceedings of the international symposium on vlsi technology, apr. 2011, pp. 1–2. [6] k. bernstein, d. j. frank, a. e. gattiker, w. haensch, b. l. ji, s. r. nassif, e. j. nowak, d. j.pearson, and n. j. rohrer, "high-performance cmos variability in the 65-nm regime andbeyond," ibm journal of research and development, vol. 50, pp. 433–449, jul-sep 2006. https://www.researchgate.net/publication/2985293_cramming_more_components_onto_integrated_circuits?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/2985293_cramming_more_components_onto_integrated_circuits?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/2985293_cramming_more_components_onto_integrated_circuits?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/2985293_cramming_more_components_onto_integrated_circuits?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/242353242_mos_scaling_transistor_challenges_for_the_21st_century?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/242353242_mos_scaling_transistor_challenges_for_the_21st_century?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/242353242_mos_scaling_transistor_challenges_for_the_21st_century?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/261039047_cmos_scaling_for_the_22nm_node_and_beyond_device_physics_and_technology?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/261039047_cmos_scaling_for_the_22nm_node_and_beyond_device_physics_and_technology?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/261039047_cmos_scaling_for_the_22nm_node_and_beyond_device_physics_and_technology?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224102934_high-performance_cmos_variability_in_the_65-nm_regime_and_beyond_ibm_j_res_and_dev?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224102934_high-performance_cmos_variability_in_the_65-nm_regime_and_beyond_ibm_j_res_and_dev?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224102934_high-performance_cmos_variability_in_the_65-nm_regime_and_beyond_ibm_j_res_and_dev?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224102934_high-performance_cmos_variability_in_the_65-nm_regime_and_beyond_ibm_j_res_and_dev?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224102934_high-performance_cmos_variability_in_the_65-nm_regime_and_beyond_ibm_j_res_and_dev?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== a comparative study of reliability for finfet 365 [7] . k. schroder and j. a. abcock, ―negative bias temperature instability: road to cross in deepsubmicron silicon semiconductor manufacturing,‖ journal of applied physics, vol. 94, pp. 1–18, jul. 2003. [8] x. wang, . cheng, a. . rown, c. millar, j. . kuang, s. nassif, and a. asenov, ―statisticalvariability and reliability in nanoscale finfets,‖ in proceedings of the ieee int. electron devices meeting (iedm), 1–4, 2011. [9] b. kaczer, t. grasser, p. j. roussel, j. franco, r. degraeve, l. ragnarsson, e. simoen, g. groeseneken, and h. eisinger, ―origin of n ti variability in deeply scaled pfets,‖ in proc. of the ieee irps, 2010, pp. 26–32. [10] p. woerlee, p. amink, m. van ort, c. juffermans et al., ―the impact of scaling on hot-carrier degradation and supply voltage of deep-submicron nmos transistors,‖ in proceedings of the ieee int. electrondevices meeting (iedm), 1991, pp. 537–540. [11] y. lee, n. mielke, m. agostinelli, s. gupta, . lu, and w. mcmahon, ―prediction of logicproduct failure due to thin-gate oxide breakdown,‖ in proceedings of the ieee irps, 2006, pp. 18–28. [12] the international technology roadmap for semiconductors (itrs), 2009. http://public.itrs.net [13] v. huard, f. cacho, y. mamy andriamihaja, and a. ravaix, ―from defects creation to circuitreliability—a bottom-up approach,‖ microelectron. eng., vol. 88, no. 7, pp. 1396–1407, jul.2011. [14] v. huard v, f. cacho, y. mamy randriamihaja, a. bravaix, ―from defects creation to circuit reliability – a bottom-up approach,‖ microelectro. eng., vol. 88, pp. 1396-1407, 2011. [15] jedec publication. failure mechanisms and models for semiconductor devices, jep-122g, october 2011. [16] joseph b bernstein, gurfinkel moshe, li xiaojun, walters jörg, shapira yoram, talmor michael, ―electronic circuit reliability modeling,‖ microelectron reliab, vol. 46, pp. 1957–1979, 2006. [17] rf drenick ―mathematical aspects of the reliability problem,‖ j soc ind appl math, vol. 8, pp. 125–149, 1960. [18] "reliability prediction with mtol" by joseph b. bernstein, alain bensoussan, emmanuel bender [19] y. miura and y. matukura, ―investigation of silicon-silicon dioxide interface using mosstructure,‖ japanese journal of applied physics, vol. 5, pp. 180, 1966 [20] s. khan, s. hamdioui, h. kükner, p. aghavan, and f. catthoor, ― ti impact on logical gates innano-scale cmos technology,‖ in proceedings of the ieee 15thinternational symposium on design and diagnosticsof electronic circuits systems (ddecs), 2012, pp. 348–353. [21] h. kükner, p. weckx, p. raghavan, b. kaczer, f. catthoor, l. van der perre, r. lauwereins,and g. groeseneken, ―impact of duty factor, stress stimuli, and gate drive strength on gate delaydegradation with an atomistic trap-based ti model,‖ in proceedings of the 15theuromicro conf. on dsd, 2012, pp. 1–7. [22] v. huard, m. ennis and c. parthasarathy, ―n ti degradation: from physical mechanisms to modelling,‖ microelectronics reliability, vol. 46, pp. 1–23, 2006. [23] t. grasser, . kaczer, w. goes, t. aichinger, p. hehenberger, and m. nelhiebel, ―a two-stage model for negative bias temperature instability,‖ in proceedings of the ieee irps, 2009, pp. 33–44, 2009. [24] w. wang, s. yang, s. hardwaj, s. vrudhula, t. liu, and y. cao, ―the impact of n ti effect on combinational circuit: modeling, simulation, and analysis,‖ ieee trans. on very large scale integration (vlsi) systems, vol. 18, no. 2, pp. 173–183, 2010. [25] acovic, g. l. rosa, and y.-c. sun, ―a review of hot carrier deration mechanisms in mosfets,‖ microelectronics reliability, vol. 36, pp. 845–869, 1996. [26] e. takeda, c. y. yang, and a. miura-hamada, hot-carrier effects in mos devices, ch. 2, pp. 49–58. academic press, 1995. [27] m. song, k. p. macwilliams, and j. c. s. woo, ―comparison of nmos and pmos hot carrier effects from 300 to 77 k,‖ ieee transactions on electron devices, vol. 44, pp. 268–276, 1997. [28] m. ohring, reliability and failure of electronic materials and devices, ch. 5, p. 259. academic press, 1998. [29] d. g. pierce and p. g. rusius, ―electromigration: a review,‖ microelectron reliability, vol. 37, pp. 1053– 1072, 1997. [30] j. . lack, ―mass transport of aluminum by moment exchange with conducting electrons,‖ in proceedings of the 6th annual international reliability physics symposium, pp. 148–159, 1967. [31] . lake and s. atta, ―energy balance and heat exchange in mesoscopic systems,‖ phys. rev. b, vol. 46, no. 8, pp. 4757–4763, 1992 [32] u. lindefelt, ―heat generation in semiconductor devices,‖ j. appl. phys., vol. 75, no. 2, pp. 942–957, 1994. [33] j. lai and a. majumdar, ―concurrent thermal and electrical modeling of submicrometer silicon devices,‖ j. appl. phys., vol. 79, no. 9, pp. 7353–7361, 1996. [34] m. artaki and p. j. price, ―hot phonon effects in silicon field-effect transistors,‖ j. appl. phys., vol. 65, no. 3, pp. 1317–1320, 1989. [35] p. lugli and s. m. goodnick, ―nonequilibrium longitudinal-optical phonon effects in gaas-algaas quantum wells,‖ phys. rev. lett., vol. 59, no. 6, pp. 716–719, 1987. [36] s. amey et al, ―frequency and recovery effects in high-k ti egradation,‖ i ps 2009. pp. 1023-1027. [37] s. ramey, y. lu, i. meric, s. mudanai, s. novak, c. prasad, j. hicks. "aging model challenges in deeply scaled tri-gate technologies", in proceedings of the ieee international reliability workshop (iirw2015), 2015, pp. 56-62. https://www.researchgate.net/publication/234945384_negative_bias_temperature_instability_road_to_cross_in_deep_submicron_silicon_semiconductor_manufacturing_j_appl_phys_94_1?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/234945384_negative_bias_temperature_instability_road_to_cross_in_deep_submicron_silicon_semiconductor_manufacturing_j_appl_phys_94_1?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== 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https://www.researchgate.net/publication/224490639_the_impact_of_nbti_effect_on_combinational_circuit_modeling_simulation_and_analysis?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224490639_the_impact_of_nbti_effect_on_combinational_circuit_modeling_simulation_and_analysis?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224490639_the_impact_of_nbti_effect_on_combinational_circuit_modeling_simulation_and_analysis?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224490639_the_impact_of_nbti_effect_on_combinational_circuit_modeling_simulation_and_analysis?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== https://www.researchgate.net/publication/224490639_the_impact_of_nbti_effect_on_combinational_circuit_modeling_simulation_and_analysis?el=1_x_8&enrichid=rgreq-d53d2898-5e0d-4d8d-ba15-6a400a9455e7&enrichsource=y292zxjqywdlozi2otgxodcwmjtbuzoxnzy5nzyymtiwmtmwntzamtqxotiwntgyntq4mw== 366 s. shaheen, g. golan, m. azoulay, j. bernstein [38] t. grasser et al, "the universality of nbti relaxation and its implications for modeling and characterization," irps 2007, pp. 268-280. [39] s. pae, et al, "reliability characterization of 32nm high-k and metal gate logic transistor technology," irps 2010. pp. 3d2.1-3d2.6 [40] a. krishnan, et al., ―n ti impact on transistor & circuit: models, mechanisms, & scaling effects,‖ in proceedings of the iedm 2003. pp. 14.5.1-14.5.4 [41] c. hu, ―lucky-electron model of channel hot electron emission,‖ in proc. of the iedm, 1979. pp. 22-25. [42] . kaczer, et al., ―origin of n ti variability in eeply scaled pfets,‖ in proceedings of the irps 2010, pp. 2a3.1-2a3.7. [43] c. prasad, et al., ― ias temperature instability variation on sion/poly, hk/mg and trigate architectures,‖ in proceedings of the irps 2014, pp. 6a.5.1-6a.5.7. [44] p. packan, et al, ―high performance hi-k + metal gate strain enhanced transistors on (110) silicon,‖ in proceedings of the iedm 2008. pp.1-4. [45] g. groeseneken, et al, ― eliability issues in mugfet nanodevices,‖ in proc of irps 2008. pp.52-60. [46] j. kim, et al, ―effects of gate process on n ti characteristics of tin gate finfet,‖ in proceedings of the irps 2012. pp.gd6.1-gd6.4. [47] c. prasad, et al., ―self-heat reliability considerations on intel's 22nm tri-gate technology,‖ in proceedings of the irps 2013. pp.5d.1.1-5d.1.5. [48] s. ramey et al, "intrinsic transistor reliability improvements from 22nm tri-gate technology," in proceedings of the irps 2013. p.4c.5.1.-4c.5.5. [49] k.t. lee, et al , ―technology scaling on high-k & metal-gate finfet ti reliability,‖ in proceedings of the irps 2013. pp. 2d.1.1 2d.1.4. [50] c.c. wu, et al, ―high performance 22/20nm finfet cmos devices with advanced high-k/metal gate scheme,‖ in proceedings of the iedm 2010. pp. 27.1.127.1.4. [51] s. amey, et al., ―transistor reliability variation correlation to threshold voltage,‖ in proceedings of the irps 2015. pp. 3b2.1-3b2.6. [52] m. cho, et al, ―off-state stress degradation mechanism on advanced pmosfets,‖ in proceedings of the icicdt 2015. pp.1-4. [53] . kaczer, et al., ―origins and implications of increased channel hot carrier variability in nfinfets,‖ in proceedings of the irps 2015. pp. 3b.5.1 3b.5.6. [54] c. xu, et al, ―analytical thermal model for self-heating in advanced finfet devices with implications for esign and eliability,‖ ieee [55] international technology roadmap for seminconductors. . [56] d. hisamoto, ―multi-gate fets,‖ in proceedings of the ieee int electron dev meet (iedm). short course; 2003. [57] baozhen li, cathryn christiansen, dinesh badami, chih-chao yang. "electromigration challenges for advanced on-chip cu interconnects", microelectronics reliability, vol. 54, no. 4, pp. 712-724, 2014. [58] d. edelstein d et al, ―full copper wiring in a sub-0.25 pm cmos ulsi technology,‖ technical digest. in: ieee int electr dev meeting, 1997. p. 773–6. [59] ia blech, ―electromigration in thin aluminum films on titanium nitride,‖ j appl phys, vol. 47, pp.1203–1208, 1976. [60] li b et al, ―threshold electromigration failure time and its statistics for cu interconnects,‖ j appl phys, vol. 100, pp. 114516, 2006. [61] c-k hu et al, ―impact of cu microstructure on electromigration reliability,‖ in proceedings of the ieee intern interconnect tech. conf (iitc); 2007 [section 6.1]. [62] jj. clement, ―electromigration modeling for integrated circuit interconnect reliability analysis,‖ trans dev mater rel, vol. 1, pp. 33–42, 2001. [63] c. christiansen, b. li, j. gill, ―blech effect and lifetime projection for cu/low-k interconnects,‖ in proceedings ieee intern interconnect tech. conf. (iitc), 2008. p. 114–6. [64] b. li b et al, ―short line electromigration characteristics and their applications for circuit design,‖ in proceedings of the ieee int rel phys symp (irps), 2013, 3f2. [65] c-k hu et al, ―electromigration challenges for nanoscale cu wiring,‖ in proceedings of the aip conf 2009, 1143:3–11. [66] s. amey, et al., ― ti ecovery in 22nm tri-gate technology,‖ in proceedings of the irps 2014, pp. xt2.1xt2-6. [67] f. cacho et al, ―hci/ ti coupled model: the path for accurate and predictive reliability simulations,‖ in proceedings of the irps 2014. pp.5d4.1-5d4.5. [68] m. song, k. p. macwilliams, and j. c. s. woo, ―em reliability‖ ieee transactions on electron devices, vol. 44, pp. 268–276, 1997. instruction facta universitatis series: electronics and energetics vol. 27, no 4, december 2014, pp. 601 611 doi: 10.2298/fuee1404601s fuzzy model reference adaptive control of velocity servo system  momir r. stanković 1 , milica b. naumović 2 , stojadin m. manojlović 1 , srđan t. mitrović 1 1 military academy, university of defence in belgrade, serbia 2 department of automatic control, faculty of electronic engineering, university of niš, serbia abstract. the implementation of fuzzy model reference adaptive control of a velocity servo system is analysed in this paper. designing the model reference adaptive control (mrac) and the problem of choosing adaptation gain is considered. tuning the adaptation gain by fuzzy logic subsystem and a simple synthesis procedure of fuzzy mrac are proposed. several simulation runs show the advantages of fuzzy mrac approach. experimental validation on laboratory speed servo is realized by the acquisition system. the results confirm benefits of the proposed controller in comparison with the standard mrac. key words: mrac, fuzzy mrac, adaptation gain. 1. introduction the major conventional controllers design concepts are model based. however, process modelling is a complex procedure, which at best, provides only an approximate model of the real process, followed with some level of model uncertainty. the controllers with constant parameters in most cases are unable to cope with parameters perturbations, unmodelled dynamics and external disturbances. in order to provide acceptable system behaviour in the presence of internal and external disturbances, the appropriate adaptation of controller parameters is necessary [1]. adaptive control contains a proper adjustment mechanism of controller parameters in accordance with working conditions and the current state of the system. recall that the adaptive systems are divided in two classes: self-tuning systems and model reference adaptive systems based on parameters adaptation technique [2], [3]. in self-tuning control systems some of the recursive methods for on-line process identification are used and controller parameters are adjusted in real time based on the estimated values and predefined algorithm [4].  received may 14, 2014; received in revised form october 13, 2014 corresponding author: momir r. stanković military academy, university of defence in belgrade, generala pavla jurišića šturma 33, 11000 belgrade, serbia (e-mail: momir_stankovic@yahoo.com) 602 m. r. stanković, m. b. naumović, s. m. manojlović, s. t. mitrović in model reference adaptive control (mrac) the system performance is given by the reference model. tuning of controller parameters is based on the error, defined as the difference between reference model and real process responses [2], [5]. the main weakness of the standard mrac, with mit rule, is non-existent clearly defined rules for the adaptation gain selection. in most cases, however, it is chosen based on the large number of simulations and trial and error methods [2]. the use of fractional order parameter adjustment rule instead of the gradient approach with mit rule and the employment of fractional order reference model is proposed in [6]. the different modifications of the mrac, with a variable structure design [7], based on performing repetitive tasks [8] and with a time-varying reference model [9] have successfully been applied for plants with unmodeled dynamics, external disturbances and unknown parameters and for a system with control effort bounded. since ichikawa presented the novel design of model reference adaptive fuzzy control [10], many authors have made progress in the application of fuzzy theory in mrac [11], [12]. the fuzzy set theory allows the use of experience in system control design. the great contribution of fuzzy logic is the possibility of modelling unstructured heuristic assertions, which are expressed linguistically [13]. fuzzy adaptive concept becomes closer to the designer and it allows the use of expert knowledge and experience in designing control systems. as a result, the performance/complexity ratio is better for fuzzy adaptive controllers [14], [15]. fuzzy mrac is suitable for application in industrial control systems, where the influence of internal and external disturbances is high. in [16] simple design procedure of fuzzy mrac using error signal as fuzzy subsystem input was presented and this controller has shown better results than conventional ones. in this paper the fuzzy mrac of the speed servo system is proposed. in speed servo systems the main influence on system performances has varying load torque. based on the estimation of load torque and its first derivative the adaptation gain is adjusted by fuzzy logic subsystem (flss). through matlab/simulink® simulation models, the proposed and standard mrac of speed servo system with different load disturbance profiles are compared. the proposed controller is implemented in laboratory dc velocity servo system, and experimental validation of simulation results is obtained. 2. a revisit to the model reference adaptive control (mrac) a block diagram of the model reference adaptive control is shown in fig. 1. the desired behaviour of the system is expressed by reference model. parameters of controller are adjusted based on error e = y  ym, which is the difference between plant output y and reference model output ym. the main sources of error e are difference of reference and plant dynamics and external disturbances, denoted with w in fig. 1. the system has two feedback loops: an ordinary one composed of the plant and controller and a feedback loop for controller parameters adjustment [2]. fuzzy model reference adaptive control of velocity servo system 603 controller plant reference model adjustment mechanism my y u cu controller parameters w   e fig. 1 block diagram of model reference adaptive control adjusting the controller parameters in the direction of the negative gradient of e is realized by the well-known mit rule: d de e dt d      , (1) where  is the parameter of controller, the partial derivative de / d is called the sensitivity derivative of the system and  presents the adaptation gain [2]. consider a first order system described by the model [2]: dy ay bu dt    , (2) where u is the control variable. let the reference model be given as: m m m m c dy a y b u dt    , (3) where uc is the command signal. the perfect model reference following can be achieved by controller: 1 2cu u y   , (4) with parameters: 0 1 1 mb b    and 0 2 2 ma a b      . (5) the sensitivity derivatives directly follow from partial derivations of e with respect to the controller parameters 1 and 2 [2]: 604 m. r. stanković, m. b. naumović, s. m. manojlović, s. t. mitrović 1 2 c de b u d p a b     (6) 2 1 2 2 22( ) c bde b u y d p a bp a b          (7) where p = d /dt is the differential operator. equations (6) and (7) cannot be used directly because a and b represent parameters of the system, which are uncertain or unknown. in order to exclude parameters a and b the following approximations are required: 2 mp a b p a    (8) based on (8) and mit rule (1) the following equations for updating the controller parameters are obtained: 1 1 c m d u e dt p a           , (9) 2 1 m d y e dt p a          . (10) it can be noted that parameter b is absorbed in adaptation gain  [2]. from (9) and (10) it can be seen that mrac has only one parameter, the adaptation gain , which has to be chosen a priory and its selection influences system performances significantly [15]. by substitution of (2), (3) and (4) in (9) and (10), y and e are excluded, and the following equations are obtained: 21 1 2 ( ) 1 ( ) m c m m m g p ud y y dt g p              , (11) 2 1 12 2 2 ( ) ( ) ( ) ( ) 1 ( ) 1 ( ) m c m c ref m ref m c m c g p u g p ud g p y g p dt g p u g p u                , (12) where gm(p) and gref(p) are equivalent to transfer functions of the plant and reference model, respectively. the influence of adaptation gain  on the convergence rates of 1 and 2 to 1 0 and 2 0 , cannot be analytically derived from (11) and (12). if  is constant, the convergence rates depend only on uncertainty of plant transfer function. it is known that system performances differ for different values of  [2] and therefore it is assumed that varying , as a function of external disturbances influencing the system, can significantly increase the convergence rates. fuzzy model reference adaptive control of velocity servo system 605 3. fuzzy mrac of velocity servo system 3.1. concept of fuzzy mrac it is known that external disturbances significantly influence the convergence rates of controller parameters. the main external disturbance for speed servo system is the varying load torque on the motor shaft and it can be shown that convergence rates depend on disturbance and its dynamics. for example, the constant load torque can be effectively compensated with a small value of , while the compensation of small load torque of high frequency dynamics requires a significantly larger value. depending on load torque and its dynamics some different rules can be formed based on experience, but the exact mathematical solution cannot be easily found. this is one of the required prerequisites for fuzzy logic subsystem design: the system can be described trough set of rules based on experience, while its mathematical model is too complicated or does not exist at all [18]. this fact was the main motivation to include a special fuzzy logic subsystem (flss) in the control loop. 3.2. application of fuzzy mrac the block diagram of a velocity servo system with a fuzzy model reference adaptive control is shown in fig. 2. controller dc servo motor with tacho reference model adjustment mechanism my y u cu observer of load torque fuzzy logic subsystem y ,ai   ˆ dmˆ dm controller parameters fig. 2 block diagram of fuzzy model reference adaptive control the performance of the system is given by the first order reference model: ( ) 10 ( ) ( ) 0.01 1 m ref c y s g s u s s    . (13) the perfect model reference following the controller (4) is designed with parameters adjustment rules (9) and (10) and fuzzy logic based tuning of gain . dc servo motor transfer function with armature voltage u as input and tacho voltage utg as output is given with: 606 m. r. stanković, m. b. naumović, s. m. manojlović, s. t. mitrović ( ) (s) ( ) 1 tg m tg m m u s k k g u s t s    , (14) where / ( )m em a e em mek k r f k k  and / ( )m e a a e em met j r r f k k  are dc motor static gain and time constant, respectively [19]. the values of tacho constant ktg and dc motor electrical and mechanical parameters are previously identified [20] and shown in table 1. table 1 parameters of dc motor and tacho parameter value armature resistance ra 8.91 ω armature inductivity la 4.5 mh moment of inertia je 2.93e-5 kg m 2 coefficient of viscous friction fe 11.7e-5 kg m 2 /rad/s electromechanical constant kem 0.103 nm/a mechanical-electrical constant kme 0.103 v/rad/s tacho constant ktg 0.0191 v/rad/s the observer for load torque and its first derivative estimation is designed based on dc motor moment equation: ( )ˆ ( ) ( ) ( ) ˆ ( )ˆ ( ) d em a e e d d d t m t k i t j f t dt dm t m t dt      (15) where ia(t) and (t) are measured armature current and shaft angular velocity, respectively. the estimated values ˆ dm and ˆ dm are inputs to fuzzy subsystem for  tuning, and the corresponding membership functions are shown in fig. 3. the linguistic variable m (load torque) is described by five membership functions: small (ms), intermediate positive (mip), large positive (mlp), intermediate negative (min) and large negative (mln). linguistic variable cm (the first derivation of load torque) is defined by membership functions: small (cs), intermediate positive (cip), large positive (clp), intermediate negative (cin) and large negative (cln). -0.25 0 0.25-0.15 -0.05 0.05 0.15 mln msmin mip mlp [nm]dm -0.5 0 0.25-0.2 -0.1 0.1 0.4 cln cs cin cip clp [nm/ s]ddm dt -0.4 0.2 a b fig. 3 membership functions of: a) linguistic variable m and b) linguistic variable cm fuzzy model reference adaptive control of velocity servo system 607 the developed flss is of the takagi–sugeno type, with two inputs: ˆ dm and ˆ dm , and one output, adaptation gain . for t and s norm, the minimum and maximum method was selected, respectively [21]. the fuzzy rules base for suggested flss for adaptation gain selection is shown in table 2. the set of rules is comprised of 25 rules, and the rules are defined experimentally, based on repeated simulations with different values of . flss output  is nonnegative scalar, and can assume values from min = 0.005 to max = 0.25. table 2 fuzzy rules base of fls mln min ms mip mlp cln 0.6γmax 0.8γmax 0.9γmax 0.8γmax 0.4γmax cin 10 γmin 0.6γmax 0.4γmax 0.6γmax 2 γmin cs 2 γmin 10 γmin 0.4γmax 10 γmin γmin cip 10 γmin 0.8γmax 0.4γmax 0.6γmax 2 γmin clp 0.6γmax γmax γmax γmax 0.4γmax 3.3. simulation results based on matlab/simulink® simulation models, the mrac and proposed fuzzy mrac of the velocity servo system with parameters given in table 1 are compared. performances of tracking of square reference with magnitude of ± 100 rad/s and period of 10s are analyzed. in the first case the trapezoidal load, shown in fig. 4a, is applied on a motor shaft. responses of the speed servo system with mrac and fuzzy mrac are presented in fig. 4b and fig. 4d. it can be seen that during the transient of the load disturbance, when it has a constant rate of change, mrac with greater  provides smaller reference tracking error, but when load disturbance becomes of constant value, the response is more oscillatory. the fuzzy mrac has better reference tracking performances during both periods in load disturbance profile, due to fuzzy adjustment of  in which the information of load disturbance derivative is included. the change of  is shown in fig. 4c. the tracking performances in the presence of the sinusoidal load disturbance with angular frequency of 4 [rad/s], presented in fig. 5a, are also analysed. the responses of mrac and proposed controller are shown in fig. 5b and fig. 5d, respectively. it can be noted that mrac with greater  almost completely eliminates the influence of load disturbance of steady state, but the transient is more oscillatory. the proposed controller enables acceptable overshoot and steady state reference tracking performances. the adaptation gain for this case is shown in fig 5c. the integral of absolute error e = y  ym for all cases with trapezoidal load and sinusoidal load disturbance is summarized in table 3, and the results confirmed the advantages of the proposed fuzzy mrac controller. 608 m. r. stanković, m. b. naumović, s. m. manojlović, s. t. mitrović 0 2 4 6 8 10 -0.2 -0.1 0 0.1 0.2 t [s] m d [ n m ] 0 2 4 6 8 10 -150 -100 -50 0 50 100 150 t[s]  [ ra d /s ] y (=0.05) y (=0.02) y (=0.18) y m a b 0 2 4 6 8 10 0 0.05 0.1 0.15 0.2 0.25 t [s] a d a p ta ti o n g a in 0 2 4 6 8 10 -150 -100 -50 0 50 100 150 t[s]  [ ra d /s ] y m y (fuzzy mrac) c d fig. 4 simulation results for tracking reference model: a) load torque, b) mrac for different , c) change  of fuzzy mrac, d) fuzzy mrac 0 2 4 6 8 10 -0.1 -0.05 0 0.05 0.1 0.15 t [s] m d [ n m ] 0 2 4 6 8 10 -150 -100 -50 0 50 100 t [s]  [ ra d /s ] y (=0.02) y (=0.05) y (=0.18) y m a b 0 2 4 6 8 10 0 0.05 0.1 0.15 0.2 0.25 t [s] a d a p ta ti o n g a in 0 2 4 6 8 10 -150 -100 -50 0 50 100 t [s]  [ ra d /s ] y m y (fuzzy mrac c d fig. 5 simulation results for tracking reference model: a) load torque, b) mrac for different , c) change  of fuzzy mrac, d) fuzzy mrac fuzzy model reference adaptive control of velocity servo system 609 table 3 integral absolute error mrac fuzzy mrac γ=0.02 γ=0.05 γ=0.18 trapezoidal load 43.4 37.5 149.2 15.1 sinusoidal load 182.6 70 27.5 24.5 4. experimental validation the experimental validation of simulation results is realized with a laboratory velocity servo system. in fig. 6 the experimental setup is shown. a dc servo motor with outputs for angular rate and armature current signals is used. the motor is equipped with a magnetic brake for variable load torque generating. the communication between the personal computer and the dc servo motor is provided with the acquisition card dt 9812. the control signals from the acquisition card before applying to the armature of the motor are amplified by the power amplifier. fig. 6 experimental setup mrac and fuzzy mrac are designed in matlab/simulink® environment. the simulink model of the proposed fuzzy mrac is shown in fig. 7. analog out. dt9812 to power amplifire analog inp. dt9812 from tacho analog inp. dt9812 from dc motor 10 0.01s+1 reference model w [rad/s] ia [a] md [nm] dmd/dt[nm/s] load torque observer 1/ktg gain fuzzy logic teta 1 teta 2 ref uc control signal controller e y gamma uc teta 2 teta 1 adjustment mechanism 100 [rad/s] fig. 7 simulink model of fuzzy mrac 610 m. r. stanković, m. b. naumović, s. m. manojlović, s. t. mitrović the step reference with magnitude of 100 rad/s is software generated. the signals of tacho and dc motor armature current from the acquisition card are introduced in simulink environment by analog input blocks. the control signal from the controller is passed to acquisition card by analog output block. varying load torque, generated by magnetic brake, is estimated with the observer and is shown in fig. 8a. angular rate of motor shaft is acquired and graphically presented in fig 8b and 8d. from figures it can be seen that the experimental results are very similar to the simulation results. speed servo system performances are much better with the proposed fuzzy mrac then with conventional mrac. in fig. 8c the changing of the adaptation gain  is shown. 0 1 2 3 4 5 -0.1 0 0.1 0.2 0.3 t [s] m d [ n m ] 0 1 2 3 4 5 0 50 100 t [s]  [ ra d /s ] y (=0.03) y (=0.1) y m a b 0 1 2 3 4 5 0 0.05 0.1 0.15 0.2 0.25 t [s] a d a p ta ti o n g a in 0 1 2 3 4 5 0 50 100 t [s]  [ ra d /s ] y m y (fuzzy mrac) c d fig. 8 experimental results for tracking reference model: a) load torque, b) mrac for different , c) change  of fuzzy mrac, d) fuzzy mrac 5. conclusion the synthesis procedure of fuzzy logic model reference adaptive control (mrac) is realized in this paper. fuzzy mrac is suitable for use in industrial control applications under all disturbance conditions. the implementation of the proposed control algorithm is analysed on the laboratory velocity servo system where the varying load torque has the main influence on system performances. the influence of varying load disturbance is compensated by changing the adaptation gain parameter by using a relatively simple t-s fuzzy logic subsystem. some simulation results show the advantages of the fuzzy mrac concept. the experimental validation confirms the simulation results. fuzzy model reference adaptive control of velocity servo system 611 acknowledgement: the paper is a part of the research supported by the ministry of education, science and technology development within the project iii44004 (2011-2014). references [1] z. bubnicki, modern control theory, general characteristics of control system, springer, 2005. doi:10.1007/3-540-28087-1 [2] k. astrom, b. wittenmark, adaptive control, second ed. netherlands, addison-wesley, 1995. [3] e. nebosko, a. proskurnikov, v. yakubovich, "adaptive regulators for the control of an uncertain linear discrete time system with a reference model", doklady mathematics, vol. 82(1), pp.667–670, 2010. doi: 10.1134/s1064562410040423 [4] t. ren, t. chen,c. chen, "motion control for a two-wheeled vehicle using a self-tuning pid controller", control engineering practice, vol. 16, pp.365–375, 2008. doi: 10.1016/j.conengprac.2007.05.007 [5] s. abdeddaim, a. betka, s. drid, m. becherif, "implementation of mrac controller of a dfig based variable speed grid connected wind turbine", energy conversion and management, vol. 79, pp.281-288, 2014. doi: 10.1016/j.enconman.2013.12.003 [6] b. vinagre, i. petráš, i. podlubny, y.chen, "using fractional order adjustment rules and fractional order reference models in model-reference adaptive control", nonlinear dynamics, vol. 29, pp.269279, 2002. doi: 10.1023/a:1016504620249 [7] c. chien, k. sun, a. wu, l. fu, "a robust mrac using variable structure design for multivariable plants", automatica, vol.32, pp.833-848, 1996. doi: 10.1016/0005-1098(96)00009-x [8] a. tayebi, "model reference adaptive iterative learning control for linear systems", international journal of adaptive control and signal processing, vol. 20, pp.475–489, 2006. doi :10.1002/acs.913 [9] p. balaguer, "similar model reference adaptive control with bounded control effort", international journal of adaptive control and signal processing, vol.25, pp.577–592, 2011. doi:10.1002/acs.1222 [10] k. ichikawa, "an approach to the synthesis of model reference adaptive control system", international journal of control, vol. 32, pp.175-190, 1980. doi:10.1080/00207178008922852 [11] n. golea, a. golea, k. benmahammed, "fuzzy model reference adaptive control", ieee transactions on fuzzy systems, vol. 10(4), pp. 436-444, 2002. doi: 10.1109/tfuzz.2002.800694 [12] h. abid, m. chtourou, a. toumi, "an indirect model reference robust fuzzy adaptive control for a class of siso nonlinear systems", international journal of control, automation and systems, vol. 7, pp. 982-991, 2009. doi: 10.1007/s12555-009-0615-8 [13] s. mitrović, ţ. đurović, "fuzzy logic controller for bidirectional garaging of differential drive mobile robot", advanced robotics, vol. 24(8), pp.1291-1311, 2010. doi:10.1163/016918610x501444 [14] c. dragoş, s. preitl, r. precup, m. cretiu, "modern control solutions for mechatronic servosystems. comparative case studies", in proceedings of the 10th international symposium of hungarian researchers on computational intelligence and informatics cinti 2009, budapest, hungary, 2009, pp. 69-82. [15] m. kadjoudj, n. golea, m. benbouzid, "fuzzy rule – based model reference adaptive control for pmsm drives", serbian journal of electrical engineering, vol.4, pp. 13-21, 2007. doi: 10.2298/sjee0701013k [16] z.li, "model reference adaptive controller design based on fuzzy inference system", journal of information & computational science, vol. 8, pp.1683–1693, 2011. [17] p.swarnkar, s. jain, r. nema, "effect of adaptation gain in model reference adaptive controlled second order system", engineering, technology and applied science research, vol.1, pp.70-75, 2011. [18] n. sinha, m. gupta, l. zadeh, soft computing and intelligent systems: theory and applications, academic press, 2000. [19] ţ. đurović, b. kovačević, signals and systems, beograd, academic mind, 2006 (in serbian). [20] m.stanković, m. naumović, s. manojlović, "a simple servo system as a laboratory equipment for demonstrating optimal control design", in proceedings of the 57th conference etran, zlatibor, serbia, 2013, pp. au4.2.1-6 (cd edition in serbian). [21] k.tanaka, h. wang, fuzzy control systems design and analysis, john wiley & sons, 2001. the latent effects in digital ic’s under electrical overstress pulses facta universitatis series: electronics and energetics vol. 28, no 1, march 2015, pp. 153 164 doi: 10.2298/fuee1501153b total ionizing dose effects and radiation testing of complex multifunctional vlsi devices  dmitry boychenko, oleg kalashnikov, alexander nikiforov, anastasija ulanova, dmitry bobrovsky, pavel nekrasov national research nuclear university (nrnu) “mephi”, moscow, russian federation abstract. total ionizing dose (tid) effects and radiation tests of complex multifunctional very-large-scale integration (vlsi) integrated circuits (ics) rise up some particularities as compared to conventional “simple” ics. the main difficulty is to organize informative and quick functional tests directly under irradiation. functional tests approach specified for complex multifunctional vlsi devices is presented and the basic radiation test procedure is discussed in application to some typical examples. key words: total ionizing dose (tid) effect, radiation test, functional failure, operating mode 1. introduction radiation hardness requirements are typical for all kinds of microelectronic parts for space, avionics, military and nuclear physics applications. radiation tests have to be performed to qualify each type of ic within its design, manufacturing or application steps [1], [2]. the infinite number of various radiation test results have been published recently but most of them are concentrated on rather simple devices under test – transistors, digital or analog ics with rather simple radiation sensitive parameters set and well developed measurement procedures [3]-[5]. in case of modern complex vlsi ics the same test approach is widely used, based on choosing modes and conditions of ic‟s operation under irradiation to be as simple as possible and measuring the simplest electric parameters, for example output voltages and power supply or input currents. at the same time, most of radiation test facilities initially are not adopted for ic radiation tests and have rather long signal cables – about ten meters and more, that excludes the real functional test possibility under irradiation for high-frequency and precision devices. the aim of this research is to prove the necessity and demonstrate the possibility of complex functional testing (ft) of vlsi ics under tid irradiation, and to show the existence of critical electrical and functional modes of ic operation. we have reviewed the most typical problems of multifunctional vlsi ics tid testing which are illustrated received september 3, 2014; received in revised form december 4, 2014 corresponding author: aleksandr nikiforov national research nuclear university (nrnu) “mephi”, moscow, russian federation (e-mail: aynik@spels.ru) 154 d. boychenko, o. kalashnikov, a. nikiforov, et al. by different ics radiation behavior [6]-[16]. we also provide typical guidelines for ft procedure (both hardware and software) and present the proper gamma irradiation facility. in this paper we concentrate on tid effects experimental research, but all main results and conclusions can be spread to transient radiation effects (tre), displacement damage (dd) and single event effects (see) [17]-[20]. 2. functional and parametric failures tid behavior of complex vlsi ics is usually non-trivial. it means that simultaneous total dose degradation of different elements and their mutual influence often lead to mixed parametric-functional ic failures. the results of 32-bit risc-processor idt79r308125mj testing are shown in fig. 1 as an example [6]. processor malfunction (internal cache memory errors) is accompanied by parametric failure (supply current increase). fig. 1 processor cache memory errors number and supply current vs. total dose. it is difficult to separate parametric and functional tid failures for some types of complex ics, such as adcs and dacs. parametric degradation leads to functional failures of these ics. in fig. 2 the set of adc parameters is presented as a function of total dose [7]. the increase of gain error and nonlinearity is derived from the adc transfer function degradation (fig. 3) at 200 krad, when the adc actually does not operate. the similar radiation behavior is observed at flash memory slcf128mm1ui (stec) testing (fig. 4). the read speed extreme fall means in fact that the flash memory cannot operate properly [8]. total ionizing dose effects and radiation testing of complex multifunctional vlsi devices 155 fig. 2 tid degradation of adc conversion parameters and supply current. fig. 3 tid degradation of adc transfer function. 156 d. boychenko, o. kalashnikov, a. nikiforov, et al. total dose, krad(si) 0 2 4 6 8 10 12 14 r e a d s p e e d , k b /s 0 2000 4000 6000 8000 10000 12000 sample 1 sample 2 sample 3 fig. 4 read speed vs. tid level for slcf128mm1ui. the analysis of tid test data for different ic types demonstrates the critical importance of ft during complex multifunctional vlsi ics radiation test. ics dominant tid failure mechanism (parametric or functional) statistics from our test center is presented in fig. 5. one can see the essential prevalence of tid failures for simple logic while other (complex) types of ics are characterized by subsequent or even dominant functional failures [9]. fig. 5 functional vs. parametric tid failures quantities for various ics classes. the essential problem of ft design is the proper selection of ics operating modes under irradiation. it is known that tid hardness usually depends strongly on the electric bias and operating mode under irradiation [10]. the hardness level difference between the best and the worst case modes for a particular ic may be several times. total ionizing dose effects and radiation testing of complex multifunctional vlsi devices 157 radiation sensitivity of ic‟s different units can vary significantly, since the elements operate at different electrical modes under irradiation. fig. 6 shows that soi risc microprocessor powerpc7448 (e2v) demonstrates no uniformity in tid hardness. in „normal‟ mode (processor executes a test program under irradiation) the failure dose is much higher (6–10 times) than in „periodical restarts‟ mode under irradiation. it was found that the boot unit of the microprocessor is the most tid sensitive [12]. static and dynamic operation modes of ic under irradiation usually lead to very different estimations of hardness levels. for example, the total dose graphs presented in fig. 7 demonstrate the extreme increase of ram supply current at static irradiation mode, while the samples irradiated at dynamic mode are much harder [13]. fig. 6 functional failuretid for different irradiation modes of powerpc7448 microprocessor. fig. 7 ram supply current vs. total dose at static and dynamic operation modes under irradiation. 158 d. boychenko, o. kalashnikov, a. nikiforov, et al. 3. ics operating mode under irradiation in some cases tid hardness difference of samples irradiated in various operating modes leads to the situation when the samples irradiated in one mode do not fail at all, whereas the hardness level of the samples irradiated in another mode is rather low. for example, in fig. 8 the results of mil-std-1553b receiver bus-65163-220y (ddc) tid testing are presented [14]. some samples have been irradiated in data transfer mode and the others – in „silent‟ mode (without data transfer). one can see that the second part of samples did not fail at all. these examples demonstrate the importance of ics operating mode under irradiation correct selection. in most cases the purpose of the test is to determine the ic hardness level in the worst case mode. complex multifunctional vlsi ics can often operate in dozens of modes, that is why the preliminary analysis and research should be carried out to find such mode. fig. 8 supply current vs. tid level for bus-65163-220y samples irradiated in transfer mode and “silent” mode. 4. testing during and after irradiation as it has been mentioned before, sometimes radiation test procedure is based on measurements of only the most primitive electrical parameters under irradiation. the complete functional testing, if any, is performed with a delay of several hours or even days after irradiation. this is due to the inability of a radiation test center to carry out an informative test under irradiation. the test procedure is often based on special equipment (industrial ic testers) which is not adapted to radiation test environment, nor is compatible with irradiation facilities and does not support remote testing. but according to our experience and data, it is really very important to execute ft directly during irradiation. testing ic samples after irradiation would distort the real radiation behavior picture and hardness level because of annealing that can result even in full operation recovery. total ionizing dose effects and radiation testing of complex multifunctional vlsi devices 159 in fig. 9 two graphs of cmos adc inl are shown: the first is measured immediately after the 100 krad (si) irradiation and the second 12 hours later (t = +25ºc) [15]. one can see that 12-hours annealing leads to an adc‟s operation recovery. fig. 10 demonstrates another example of tid hardness level distortion because of annealing [8]. annealing was carried out at a temperature of +25ºc. the samples of 4 mbit static ram have been irradiated to 60-120 krad (si) and were tested both during irradiation and after 24-hours annealing. the second part of this procedure demonstrated full functional recovery and significant supply current drop. fig. 9 adc inl measured immediately after 100 krad (si) irradiation and 12 hours later(t = +25ºc) (datasheet margins are shown by dashed lines at ±4 lsb). fig. 10 ram errors number (black symbols) and supply current (gray symbols) vs. tid during irradiation and after annealing(t = +25ºc). 160 d. boychenko, o. kalashnikov, a. nikiforov, et al. 5. low dose rate effects the important specifics of space applications is its low intensity (dose rate) in the range of 10 -3 ... 10 -4 rad (si)/s, and it is well known that the low dose rate effects can affect ics total dose hardness [3], [21]. it should be noted that in most cases radiation tests are carried out in the dose rate range 10 ... 1000 rad (si)/s. low dose rate effects are especially important for bipolar ics, which are often characterized by increasing parameters‟ degradation and low tid hardness at low dose rate, the so-called eldrs (enhanced low dose rate sensitivity) effect [22], [23]. this effect has to be taken into account when planning bipolar ics testing procedure for space applications. at the same time, for cmos ics dose rate influences on the hardness in the opposite way – the hardness levels are usually higher at low dose rates [24], [25]. the example in fig. 11 demonstrates the influence of radiation dose rate on cmos flash-memory wf1m32b (white electronic designs) tid hardness. low dose rate conditions proved to be about 1,5 times better than high dose rate [26]. for complex devices the low dose rate effects may be more complicated. both parameters degradation and functional performance of such ics often demonstrate different behavior at low and average radiation intensities. in fig. 12 the nonlinearity of adc ad7890 (analog devices) vs. total dose at two dose rates is presented. since radiation tests are usually carried out at the average dose rates, the real on-board cmos ics tid hardness may be higher than it has been determined in laboratory radiation tests. direct low dose rate testing is usually hard to fulfil because of the long time required. there are many techniques of accelerated testing usually based on irradiation at average intensity and following annealing (see [27] – the well known mil-std-883h test method), but all of them have restrictions and adequacy problems. we suggested and implemented the „engineering‟ technique for low dose rate effects estimation. this technique is based on the combination of dose rates under testing and allows obtaining real tid hardness levels without great time loss. the basic structure of the technique for cmos ics is as follows: (1) radiation testing of some samples (about half of a lot) at average dose rate (10 ... 100 rad (si)/s) to estimate tid failure level; (2) comparison of this level with the required hardness level; (3) if the determined tid failure level is above the requirements we do not need to take the low dose rate effect into account, because this effect can only improve the cmoc ics tid hardness; (4) if the determined tid failure level is below than the requirements for more than 3 times we also do not need to test the low dose rate conditions, because according to our experience, this effect cannot improve the hardness level estimation for more than 2-2,5 times; (5) and if the failure level is below the requirements less than 3 times, we test the rest samples of a lot at low dose rate (0,005 ... 0,05 rad (si)/s) to determine the tid failure level for the real space conditions. this rational technique reduces the low dose rate testing amount in several times [28]. total ionizing dose effects and radiation testing of complex multifunctional vlsi devices 161 total dose, krad(si) 0 10 20 30 40 s u p p ly c u rr e n t, u a 0,1 1 10 100 1000 10000 fig. 11 total dose degradation of wf1m32b supply current: black symbols – 10 rad(si)/s, white symbols – 0.04 rad(si)/s. total dose, krad (si) 0 2 4 6 8 n o n lin e a ri ty , l s b 0,1 1 10 100 fig. 12 total dose degradation of ad7890 nonlinearity: black symbols – 5 rad(si)/s, white symbols – 0.01 rad(si)/s. 162 d. boychenko, o. kalashnikov, a. nikiforov, et al. 6. radiation test facilities the experimental results presented in the previous section demonstrate the necessity of special test equipment for complex multifunctional vlsi ics radiation testing. as a rule, industrial ic testers are not optimal for radiation test procedure. that is why specialized technical solutions have been designed, in order to combine complex ft of different vlsi ics with restrictions of modern irradiation facilities. therefore, universal vlsi ics test system have been designed based on the national instruments hardware, labview software and the set of test plates, adapted and specified to the variety of complex multifunctional ics under test [29]. the general system structure is presented in fig. 13. fig 13 general structure of the ni-based vlsi ics radiation test system. radiation testing of vlsi ics also requires convenient irradiating facilities. the basic requirements are low electromagnetic interference and short signal lines. the original dual-zone co-60 (energy 1,25 mev, dose rate 0,01...1 rad/s) and cs-137 (energy 0,66 mev, dose rate 0,2...20 rad/s) gamma facilities have been especially designed and installed in nrnu mephi – spels test center. the unique feature is about 1m distance between ft equipment and device under test. being used in coincidence with compact x-ray tester (energy up to 0,1 mev, dose rate 1...500 rad/s) and pulsed linear electron accelerator in xray mode (linac – energy 2 mev, dose rate 0,5...100 rad/s) these facilities allow to carry out complex multifunctional vlsi ics tid-radiation tests in practical range of irradiation intensities, that is necessary to estimate tid hardness for all kinds of applications – [30],[31],[32]. 7. conclusion as a conclusion we can note that radiation behavior of multifunctional vlsi ics differs from radiation behavior of „simple‟ ics by significant features, causing specifics in test procedure. it is necessary to take it into account when planning and preparing the test experiment. total ionizing dose effects and radiation testing of complex multifunctional vlsi devices 163 according to the practical tid test experience one can summarize the following features of complex multifunctional vlsi ics radiation test procedure:  it is important to research and select correctly worst-case ic bias conditions and operating modes under irradiation;  functional and parametric tests should accompany each other in coincidence;  tests should be executed directly under irradiation;  low dose rate effects influence should be taken into consideration during testing. these principles form the foundation of basic test technique and equipment which are used in radiation test center of nrnu mephi-spels. the test system and procedure presented have been checked and verified in hundreds of real radiation tests of complex multifunctional vlsi devices. references [1] a. nikiforov, a. chumakov, v. telets, et. al, “ic space radiation effects experimental simulation”, in proc. of workshop "space radiation environment modelling new phenomena and approaches", oct. 79, 1997, moscow, russia, p. 4.11. [2] v. belyakov, a. chumakov, a. nikiforov, v. pershenkov, “ic's radiation effects modeling and estimation”, microelectronics reliability, 1999, v. 40, № 12, pp. 1997-2018. [3] v. belyakov, v. pershenkov, g. zebrev, et. al, “methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: a review”, russian microelectronics, 2003, v. 32, № 1, pp. 25-38. [4] d. gromov, v. elesin, g. petrov et. al, “radiation effects in nanoelectronic elements”, semiconductors, 2010, v. 44, № 13, pp. 1669-1702. [5] d. boychenko, l. kessarinskiy, d. pechenkina, “the influence of the electrical conditions on total dose behavior of the analog switches”, in radecs proceedings, 2011, sevilla, spain, pp. 822-824. [6] p. nekrasov, a. demidov, o. kalashnikov, “functional checks of microprocessors during radiation tests”, instruments and experimental techniques, 2009, v. 52, № 2, pp. 196-199. [7] o. kalashnikov, a. demidov, a. nikiforov, et. al, “integrating analog-to-digital converter radiation hardness test technique and results”, ieee transactions on nuclear science, 1998, v. 45, № 6(1), pp. 2611-2615. [8] a. boruzdina, a. ulanova, n. grigor'ev, a. nikiforov, “radiation-induced degradation in the dynamic parameters of memory chips”, russian microelectronics, 2012, v. 41, № 4, pp. 259-265. [9] o. kalashnikov, “statistical variations of integrated circuits radiation hardness”, in radecs proceedings, 2011, sevilla, spain, pp. 661-665. [10] o. kalashnikov, “cmos integrated circuits total dose functional upset sensitivity to operation mode”, in proc. of the 4th workshop on electronics for lhc experiments, 1998, rome, italy, pp. 484-485. [11] a. kirgizova, a. nikiforov, n. grigor'ev, et. al, “dominant mechanisms of transient-radiation upset in cmos ram vlsi circuits realized in sos technology”, russian microelectronics, 2006, v. 35, № 3, pp. 162-176. [12] a. karakozov, o. korneev, p. nekrasov, et. al, “bias conditions and functional test procedure influence on powerpc7448 microprocessor tid tolerance”, in radecs proceedings, 2013, oxford, uk (to be published). [13] a. akhmetov, d. boychenko, d. bobrovskiy, et. al., “system on module total ionizing dose distribution modeling”, in proceedings of the international conference on microelectronics miel, 2014, belgrade, serbia, pp. 329-331. [14] d. bobrovsky, o. kalashnikov, p.nekrasov, “functional control technique for fpga total ionizing dose testing”, radecs proceedings, 2012, biarritz, france. [15] o. kalashnikov, a. artamonov, a. demidov, et. al, “adc/dac radiation test technique”, workshop record 4th european conf. "radiations and their effects on devices and systems" (radecs 97), 1997, palm beach-cannes, france, pp. 56-60. [16] o. kalashnikov, a. nikiforov. “tid behavior of complex multifunctional vlsi devices”, in proceedings of the international conference on microelectronics miel, 2014, belgrade, serbia, pp. 455-458. http://www.scopus.com/authid/detail.url?authorid=7103252626&eid=2-s2.0-0037274111 http://www.scopus.com/authid/detail.url?authorid=7004360154&eid=2-s2.0-0037274111 http://www.scopus.com/authid/detail.url?authorid=8706168700&eid=2-s2.0-0037274111 http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/authid/detail.url?authorid=26530680900&eid=2-s2.0-65149098680 http://www.scopus.com/authid/detail.url?authorid=7004500118&eid=2-s2.0-65149098680 http://www.scopus.com/authid/detail.url?authorid=6701334891&eid=2-s2.0-65149098680 http://www.scopus.com/source/sourceinfo.url?sourceid=15467&origin=recordpage http://www.scopus.com/authid/detail.url?authorid=6701334891&eid=2-s2.0-0032308202 http://www.scopus.com/authid/detail.url?authorid=7004500118&eid=2-s2.0-0032308202 http://www.scopus.com/authid/detail.url?authorid=7202140406&eid=2-s2.0-0032308202 http://www.scopus.com/source/sourceinfo.url?sourceid=17368&origin=recordpage http://www.scopus.com/authid/detail.url?origin=resultslist&authorid=55348114300&zone= http://www.scopus.com/authid/detail.url?origin=resultslist&authorid=7003366382&zone= http://www.scopus.com/authid/detail.url?origin=resultslist&authorid=13405410000&zone= http://www.scopus.com/authid/detail.url?origin=resultslist&authorid=7202140406&zone= http://www.scopus.com/record/display.url?eid=2-s2.0-84865596480&origin=resultslist&sort=plf-f&src=s&sid=7c25d4267df1aab13e457b4758e78dab.y7eslnddisn8ce7qwvy6w%3a100&sot=aut&sdt=a&sl=43&s=au-id%28%22nikiforov%2c+alexander+yu%22+7202140406%29&relpos=0&relpos=0&citecnt=0&searchterm=au-id%28%5c%26quot%3bnikiforov%2c+alexander+yu%5c%26quot%3b+7202140406%29 http://www.scopus.com/record/display.url?eid=2-s2.0-84865596480&origin=resultslist&sort=plf-f&src=s&sid=7c25d4267df1aab13e457b4758e78dab.y7eslnddisn8ce7qwvy6w%3a100&sot=aut&sdt=a&sl=43&s=au-id%28%22nikiforov%2c+alexander+yu%22+7202140406%29&relpos=0&relpos=0&citecnt=0&searchterm=au-id%28%5c%26quot%3bnikiforov%2c+alexander+yu%5c%26quot%3b+7202140406%29 http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/authid/detail.url?authorid=8696494800&eid=2-s2.0-33646395977 http://www.scopus.com/authid/detail.url?authorid=7202140406&eid=2-s2.0-33646395977 http://www.scopus.com/authid/detail.url?authorid=13405410000&eid=2-s2.0-33646395977 http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage 164 d. boychenko, o. kalashnikov, a. nikiforov, et al. [17] a. nikiforov, p. skorobogatov, “physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: a nonlinear model”, russian microelectronics, 2006, v. 35, № 3, pp. 138-149. [18] g. davydov, v. luchinin, a. nikiforov, “effect of irradiation with fast neutrons on electrical characteristics of devices based on cvd 4h-sic epitaxial layers”, semiconductors, 2003, v. 37, № 10, pp. 1229-1233. [19] a. chumakov, a. vasil'ev, a. yanenko, et. al, “single-event-effect prediction for ics in a space environment”, russian microelectronics, 2010, v. 39, № 2, pp. 74-78. [20] d. bobrovsky, o. kalashnikov, p.nekrasov, “an estimate of the fpga sensitivity to effects of single nuclear particles”, russian microelectronics, 2012, v. 41, № 4, pp. 226-230. [21] j.r. schwank, “basic mechanisms of radiation effects in the natural space environment”, nsrec short course, 1994. [22] a.h. johnston et al. “enhanced damage in bipolar devices at low dose rates: effects at very low dose rates”, ieee trans. nuc. sci., 1996, vol. 43, №6, p. 3049. [23] v.s. pershenkov, a.i. chumakov, a.y. nikiforov et al. “interface trap model for the low-dose-rate effect in bipolar devices”, in radecs proceedings, 2007, deauville, france, pp. 1-6 [24] d.m. fleetwood. “total ionizing dose effects in mos and low-dose-rate-sensitive linear-bipolar devices”, ieee trans. nucl. sci., 2013, vol. 60, № 3. p.p. 1706-1730. [25] p.j. mcwhorter, s.l. miller, w.m. miller. “modeling the anneal of radiation-induced trapped holes in a varying thermal environment”, ieee trans. nucl. sci., 1990, vol. 37, №6, p. 1682–1689. [26] a. petrov, a. vasil‟ev, a. ulanova, a. chumakov, a. nikiforov, “flash memory cells data loss caused by total ionizing dose and heavy ions”, central european journal of physics, 2014, v.12, issue 10, pp. 725-729. [27] mil-std-883h – ionizing radiation (total dose) test procedure, department of defense. test method standard. microcircuits, 2010. [28] d. boychenko, o. kalashnikov, a. karakozov, a. nikiforov, “the rational technique for cmos ics total dose hardness evaluation with low dose rate effects”, russian microelectronics, 2014, v.43 – to be published. [29] d. bobrovsky, g. davydov, a.petrov, et. al, “national instruments platform based hardware-software system for electronic devices radiation experiment application”, electronics, 2012, v.5(97), pp. 91-106. [30] a. chumakov, o. kalashnikov, a. nikiforov, et. al, “'reis-ie' x-ray tester: description, qualification technique and results, dosimetry procedure”, in proc. of the 1998 ieee radiation effects data workshop, pp. 164-169. [31] a. chumakov, a. nikiforov, v. pershenkov, et. al, “prediction of local and global ionization effects on ics: the synergy between numerical and physical simulation”, russian microelectronics, 2003, v. 32, № 2, pp. 105-118. [32] a. sogoyan, a. artamonov, a. nikiforov, d. boychenko method for integrated circuits total ionizing dose hardness testing based on combined gammaand xrayirradiation facilities, facta univesitatis: series electronics and energetics, 2014, vol. 27, no. 3, pp. 329-338 http://www.scopus.com/authid/detail.url?authorid=7202140406&eid=2-s2.0-0029713508 http://www.scopus.com/authid/detail.url?authorid=6602159626&eid=2-s2.0-0029713508 http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/authid/detail.url?authorid=7005305551&eid=2-s2.0-0142153119 http://www.scopus.com/authid/detail.url?authorid=6701446103&eid=2-s2.0-0142153119 http://www.scopus.com/authid/detail.url?authorid=7202140406&eid=2-s2.0-0142153119 http://www.scopus.com/source/sourceinfo.url?sourceid=29834&origin=recordpage http://www.scopus.com/authid/detail.url?authorid=7103110289&eid=2-s2.0-77952643121 http://www.scopus.com/authid/detail.url?authorid=7402046621&eid=2-s2.0-77952643121 http://www.scopus.com/authid/detail.url?authorid=6701643388&eid=2-s2.0-77952643121 http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage http://www.scopus.com/authid/detail.url?authorid=7103110289&eid=2-s2.0-0032290021 http://www.scopus.com/authid/detail.url?authorid=6701334891&eid=2-s2.0-0032290021 http://www.scopus.com/authid/detail.url?authorid=7202140406&eid=2-s2.0-0032290021 http://www.scopus.com/authid/detail.url?authorid=7103110289&eid=2-s2.0-0032290021 http://www.scopus.com/authid/detail.url?authorid=7202140406&eid=2-s2.0-0032290021 http://www.scopus.com/authid/detail.url?authorid=7004360154&eid=2-s2.0-0037274111 http://www.scopus.com/source/sourceinfo.url?sourceid=27163&origin=recordpage facta universitatis series: electronics and energetics vol. 32, no 4, december 2019, pp. 615-631 https://doi.org/10.2298/fuee1904615s © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd development of an automated gas-leakage monitoring system with feedback and feedforward control by utilizing iot  mhia md. zaglul shahadat, avijit mallik, md. monowarul islam dept. of mechanical engineering, rajshahi university of engineering & technology, rajshahi, bangladesh abstract. liquefied petroleum gas (lpg) is used in many ranges of applications like home and industrial appliances, in vehicles and as a propellant and refrigerator. however, leakage of lpg produces hazardous and toxic impact on human begins and other living creatures. there by, the authors developed a system to monitor the lpg gas leakage and make alert to users of it. in this research, mq-6 gas sensor is used for sensing the level of gas concentration of a closed volume; and to monitor the consequences of environmental changes an iot platform has been introduced. robust control along with cloud based manual control has been applied so that the gas leakage can be prevented in the response of either feedback or feedforward commands individually. it switches on the specified relays to control the level of gas concentration in the time of leakage the excess gas in times of leakage. it rechecks the value again and again if it crosses 300 ppm it will setup a relay-based switching on control mechanism using thingspeak cloud. the controller used here is node-mcu v:1.0. this research provides design approach on both software and hardware. hence an embedded system comprising of relay switches, embedded c++, gas sensor, temperature & humidity sensor along with internet of things (iot) is fabricated to meet the objectives of the current research. key words: internet of things, smart system, gas leakage control, embedded system 1. introduction lpg comprises of a blend of propane and butane which is profoundly combustible compound. it is an odorless gas, because of which ethanoate oil is included as incredible odorant, with the goal that spillage can be effectively identified. there are other global benchmarks like en589 [1], amyl mercaptan, and tetrahydrothiophene which are most regularly utilized as odorants. lpg is one of the substitute powers utilized nowadays. lpg is likewise utilized as a substitute fuel in vehicles because of taking off in the costs received may 1, 2019; received in revised form september 3, 2019 corresponding author: avijit mallik dept. of mechanical engineering, rajshahi university of engineering & technology, rajshahi-6204, bangladesh (e-mail: avijitme13@gmail.com)  616 m. m. z. shahadat, a. mallik, m. m. islam of oil and diesel. some people have low sense of smell, may or may not respond on low concentration of gas leakage. in such a case, some high security systems have become an essence to prevent gas leakage accidents. bhopal, chernobyl, okishima gas tragedy was an example of gas leakage accident in india, russia and japan [2, 3]. accidents due to gas leakage are increasing day by day in recent times. inherently, the researchers focused their attention on developing a smart system to monitor and avoid the gas leakage incidents [4]. gas leakage detection is not only important but stopping leakage within smallest time interval is equally essential. the authors have designed and fabricated a system capable of sniffing lpg leakage on the basis of volumetric concentration (ppm) and takes immediate action to control the situation by the aid of internet of things (iot). for a long time, wireless technologies have been a real target of hackers due to the easiness of intercepting traffic and attacking without being noticed as some weaknesses in its security protocols [5]. wireless sensor networking‟s (wsn) are also a big target due to the importance of the information it holds. for many wireless applications, the authentication system is relied on a pre-shared key (psk) which must be established before starting data communication between two or more devices. in wireless hart (highway addressable remote transducer protocol) communication, psk holds a join key (jk) having an „intrinsic security (is)‟ [6]. only when the jk is compromised, the security is overcome and plenty of attacks may take place frequently. as a prevention, this research includes iot utilized wsn‟s having developed state-of-the-art algorithms capable of detecting possible node capturing attacks along with timing delay measure technique to predict specific node viable to security threats [7, 8]. industries utilizing gas-piping (process, pharmaceuticals, chemical and fuelfired power plants) are considered as a reference to apply the proposed gas leakage monitoring and control utilizing wsn (iot enabled with wirelesshart) as per the experimental findings of the research undertaken. table 1 shows some selected referred works on gas leakage/concentration detection and control in recent times. the literatures stated above were mainly focused on sensing environmental changes (like gas concentration, relative humidity of soil and air), but all of those recent works lags in swift feedforward control along with the digital signal processing (dsp) analysis (i.e. data coherence, stability of wireless data logging, noise filtering and etc.). this paper involves like previous literatures where the authors have designed an automated lpg gas concentration monitoring system with both automatic and manual actuator(s) controlling from an iot operated embedded platform. this research focuses on monitoring volumetric concentration (in parts per millions, ppm) of economic gaseous fuels like petroleum gases, liquid petroleum gas, carbon based toxic gases (high on carbon monooxide) etc., and to alert specific administrators/operators about the leakage through an iot server (thingspeak) provided with both automatic along with decision based actuator controlling to mitigate probable accidents from gas leakage. it also includes temperature and relative humidity sensing inside the control volume to check unstable sensory behavior as per the sensor datasheet. industrial internet of things (iiot) 617 table 1 referred works on electronic sensor-based gas concentration detection and actuator control. year purpose of research major findings references 2014 development of an electronic nose for selected oil odor detection. in the new proposed method, the under damped natural frequency ωn is calculated via considering the trise from 10% to 90% of the overshoot. [9] 2017 development and analysis of gsm based gas leakage alerting system. successful wireless gsm aided alerting for possible fire accidents. [10] 2017 development of a wireless electronic nose using artificial neural network for various gas concentration monitoring. artificial neural network had been used to estimate the concentration of a gas in the air based on the ratio. [11] 2017 internet of things-based cargo monitoring system (iot-cms) to monitor any environmental changes. introduced wsn and fuzzy logic control simultaneously for the first time. [12] 2018 iot based cold storage temperature and humidity monitoring. showed how to control actuators over the net by just changing the state wise parameters from “0” to “1” and vice versa for controlling. [13] 2018 smart irrigation controlling system by using iot. the data and control were hosted in an online iot platform. the iot platform provides real-time monitoring and control via a simplified online graphical user interface (gui). [14] 2. project planning & algorithm this project deals with monitoring lpg leakage along with administrative alert by giving buzzer sound, switching on specified relay(s) and sending an alert message to administrator(s) to decide about the precautional measures. for this purpose, gas leakage concentration is sensed by gas sensor (mq-6) which sends the data (analog) to the controller (nodemcu) where the analog value is subjected to a sequential conversion to predict the probable intensity of gas inside the control volume and on crossing a reference threshold value (set by administrator/operator) the controller it switches „on‟ the relay(s) and buzzer(s) alerting to the administrator/operator of the plant (industry/home) including an extra control-option through manual control utilizing the iot server to prevent accidents from the leakage. fig. 1 shows the flow chart of the experimental system and fig. 2, fig. 3 shows the schematic block diagram and the experimental setup of the system respectively. 618 m. m. z. shahadat, a. mallik, m. m. islam fig. 1 flowchart of the fabricated control system. from the flowchart (fig. 1), it is noticed that the controller sets its baud rate or sampling frequency, check input-output pins and the delay time/samples before starting sensory data-logging. then the analog signal from gas sensor along with the digital signal from the relative humidity sensor is read and stored inside the read-only-memory of the controller for a specified timestamp constantly. the gas sensor data is subjected to adc (analog to digital conversion) followed by voltage measurement from which the sensed gas concentration level is calibrated by means of coding. then a comparator (+/-) controls the feedback action and the wireless chip (esp-8266) sends collected data to an authenticated server with an isp (internet service provided) activated router. fig. 2 system setup (schematic). industrial internet of things (iiot) 619 the system schematic shown in fig. 2, is a graphical representation of the experimental system (fig. 3). here the nodemcu used as controller is electrically connected to an analog sensor, a digital sensor and a high volt-amp rated actuator. the data transfer protocol used in this experiment is mqtt (message queuing telemetry transport); which is a low-space data transferring protocol widely used in wireless transmission. fig. 3 experimental setup. 3. mathematical model for gas sensor calibration as the system focuses on gas concentration-based alerting and control of appliances, thus only mq-6 gas sensor calibration (analog value to ppm) is considered for the mathematical analysis. dht-11 sensor is to for checking the conditional temperature and relative humidity as per gas sensor‟s datasheet. the gas sensor circuit schematic is shown in fig. 4. fig. 4 mq-6 gas sensor equivalent circuit schematic. let, vc = supply voltage = +5v, rs = sensor resistance, rl = load resistance (variable), vrl = sensor output voltage. from, current flow and voltage relationship, (1) here, , so, equation-(1) becomes; 620 m. m. z. shahadat, a. mallik, m. m. islam (2) again, from equation-(1); ⁄ (3) from, equation-(3); (4) fresh air resistance ration for gas sensors: rs/r0 = 4.4 ppm (mq-4), 9.8 (mq-2), 10 (mq-6) [23]. now, for calibrating sensor data the equation of a straight line can be beneficial. from normal geometrical analysis, the basic equation of a straight line is; (5) here, y = value on y-axis; x = value on x-axis; m = slope of line; b = intercept from y-axis. for analyzing sensitivity from rs/r0 vs ppm graph (log-log plot) with respect to datasheet, equation-(5) can be equated as; (6) slope (m) value formula: if (x0, y0) and (x, y) are any two points of a line from a loglog plot then the formula for determining m is; ⁄ ⁄ (7) intercept from y-axis (b) is given in equation-(6); (8) using equations-(1) to (8) the gas concentration can be determined directly in ppm (parts per millions): gas concentration, in parts per million (ppm) unit. where, rs/r0 = gas sensor sensitiveness, b = interception from y-axis (from, sensor datasheet; sensitiveness vs ppm graph), slope (m) = . from, the equations of analog signals of 1024 (2 10 ) resolutions; gas sensor‟s sensitivity = rs0/r0. where, rs0 = sensor output resistance at experimental environment, r0 = sensor output resistance at ideal environment (1000 ppm of lpg, 25 0 c. & 60% rh). at 32 0 c. & 55-65% of rh environment; sensor sensitivity, rs0/r0 = 9.8 (in fresh air for mq-6) [14]. in this study, at 27 0 c. & 67% of rh environment; sensor sensitivity, rs/r0 = 8.71 (at normal room condition) is obtained from adc [14, 15]. 4. test outputs & signal processing from experimental data, various calculations were performed using „matlab‟ environment. the digital signal analysis-toolbar is a great tool for signal processing and smoothing. as the data transfer took place using wireless media thus some additional noise was logged in an arbitrary manner. to overcome the problem a processing is needed. for this research, mainly fast fourier transformation (fft) was performed for better signal processing. the analysis procedure along with relative graphs are descried below; industrial internet of things (iiot) 621 coherence estimation via welch method: in digital signal processing, coherence is a statistics between two functions or signals which is used to estimate the power transfer of the input and output in a linear/linear time-invariant system. this algorithm is based on standard matlab‟s tools. the standard derivation of the mean is computed as [15-18]; √ | | | | (9) | | | | (10) if, x(t) and y(t) are two real value time variant functions where the coherence between the two signals is termed as (sometimes also called magnitude squared coherence) and is the standard deviation of the mean. by using equations-(9) & (10), fig. 5, is plotted where a normalized frequency is used for better visualization which depicts the coherence estimation via welch method. the figure shows that no data has been overlapped into one another which verifies the continuous datalogging as quite satisfactory. fig. 5 coherence estimation via welch method. the fig. 6, denotes the magnitude response curve. the rms signal-to-noise ratio for an ideal n-bit converter is; snr = (11) or, snr = √ √ √ (12) snr = 6.02n + 1.76 db, over the nyquist bandwidth of interest. fig. 6 magnitude response graph (gas sensor). 622 m. m. z. shahadat, a. mallik, m. m. islam time-domain signal processing: now, using the gas sensor data time-domain graph was plotted in fig. 7(a) to fig. 7(d), along with a 3 rd and 8 th order fast fourier transformation (fft) of the signal for better analysis. this is achieved, in a process known as convolution, by fitting successive sub-sets of adjacent data points with a lowdegree polynomial by the method of linear least squares [19]. fig. 7(a) depicts the plots of raw analog, savitzky-golay filtered value, moving average filtered value and the median plot. fig. 7(a) processed signal (ppm vs time). fig 7(b) shows the furrier fitted curve for gas sensor value from which the best suited filter was found to be the 5 th order fft. the higher and lower range has also been showed along with residuals plotted in black color. this signal filtration was done under room environment with no manual gas leak. by comparing the plots of fig. 7, the 5 th order fft was finally considered as the filter for signal processing having very low range of residuals. fig. 7(c) ppm vs time domain. (5 th order fft with 95% confidence limit). the below fig. 7(c) & (d) are the same plots as fig. 7(a) & (b), but those value represents the temperature and humidity. the same method of simulation was considered for both sensor‟s data smoothing with respect to time. industrial internet of things (iiot) 623 fig. 7(c) processed signal (humidity vs time). fig. 7(d) humidity vs time domain graph (8 th order fft of 95%). group delay response analysis: now from convolution theorem, if y is a time-variant function of x ( ) and the function x is in a convoluted form with some other similar time-variant function h then [20-24], ∫ (13) in signal processing, y(t) dependent mostly on the subsequent values of x that occurred near the time t. so, for any linear system; {∫ } ∫ (17) and the time-invariance requirement is; { } { } (18) from, eqn-13 to 18, the impulse response can be noted as; { } (19) 624 m. m. z. shahadat, a. mallik, m. m. islam from, equations-(12) to (19), using amplitude sampling technique; fig. 7(e) to fig. 7(k) are be computed numerically along with related graphical representation. fig. 7(e) is the group delay response plot for the gas sensor which shows that between 11.3-12.2 khz of sampling frequency the delay remains constant. fig. 7(f) represents the phase delay (with respect to samples), which shows positive noise addition in the cloud data thus a low-pass filter should be mounted with the sensor‟s input pin in series resulting in about 80-85% reduction of induced noise. fig.7(e) group delay response. fig. 7(f) phase delay samples. fig. 7(g), denotes the pole-zero plot for the system, which shows that this system has some noise but ultimately it is stable. to make datalogging more stable, the phase delay response should be reduced to almost zero value, which is induced mainly because of using an old and very low-cost sensor. it can be reduced by using a low pass filter (as it controls the positive phase delay addition) at the input or by using sensors from renowned brands. industrial internet of things (iiot) 625 fig. 7(g) pole zero plot. fig. 7(h) power spectrum (l) and sensitivity vs ppm plot (r). fig. 7(h) is the round-off noise power spectrum plot for the system showing the power band of the induced noise due to positive phase addition and also shows the actual & experimental sensitivity vs concentration plot, from where it can be said that the calibration was 90-95% accurate, which is good. fig. 7(i) step response (l) and ppm vs voltage plot (r). 626 m. m. z. shahadat, a. mallik, m. m. islam from, fig. 7(i), the step response (left) can be shown where it is seen that initially the system runs fine but after a certain period it shows some abruptions but the statistical filter automatically fixes the errors resulting in a smooth response. it also shows the experimental and simulated relationship between supplied voltage and gas concentration. the below, fig. 7(j) shows the time domain and frequency domain analysis plot for the system showing initial sensory noise. the transfer function of the system can be estimated by using welch transfer function distribution theory, which is plotted on fig. 7(k). fig. 7(j) time domain and frequency domain graph for the system. fig. 7(k) transfer function estimation via welch distribution. 5. design of control system feedback and feedforward both control options were applied to the experimental prototype. combining these two control options is the most challenging part for this research. the experimental threshold for gas sensor was set 300 ppm. for the feedback control, when the nearby gas concentration crosses 300 ppm then the controller automatically will set the actuator off for a certain delay period and rechecks the value of sensor again and again. if the value goes below 300 ppm then again for a certain period the actuators are turned on by a digital signal, but if again the gas concentration crosses 300 ppm then the system detects a gas leakage problem and the source valve is turned off. industrial internet of things (iiot) 627 fig. 8(a) feedback control for proposed system. fig. 8(a), shows the schematic of the developed feedback control system of the experimental system. in this device, the mean error will be the mathematical summation of desired voltage and measured voltage and those two voltages are different in terms of signs. the desired value will be always positive, and the measured value is always negative. so, when those two values are equal but opposite in signs, so there will be no errors in the control system and that will be an absolute equilibrium condition [25-27]. thus, this type of feedback control system is very effective to use. feedforward control in simple terms mean controlling something by the aid of a manual signal. in this research, when feedback control crashes or manual switching is needed then from the server a predefined signal is sent to the controller and selected actuators can be controlled. fig. 8(b) shows the schematic of the applied feedforward mechanism for controlling actuators using manual command over iot. fig. 8(b) feedforward control system for the experimental setup. the feedforward controlling actions is implemented using „https-request‟ protocol used for single way communication. the control algorithm for this research has been formulated through some logical reasonings followed by c ++ code maintaining the fuzzy logics given in table 2. from the fuzzy logics, nine probabilities of actuation is possible by generating c ++ code upon those logics, where two variables namely „https-request‟ (feedforward command 1 or 0, if undefined, set value = = 0) and „gas concentration‟ (reference 628 m. m. z. shahadat, a. mallik, m. m. islam value<300 = = 0, >300 = = 1, if value = 300, set value = = 0) are liable to specified controller responses followed by series change in actuation commands from controller utilizing both feedback and feedforward control actions simultaneously. table 2 control logics topology for proposed system. „https-request‟ from server (str.) gas concentration (ppm) controller response (bin) actuator output (bin) logic-1 0 <300 0 0 logic-2 0 >300 1 1 logic-3 1 >300 1 1 logic-4 1 <300 1 1 logic-5 undefined (= = 0) <300 0 0 logic-6 undefined (= = 0) >300 1 1 logic-7 0 =300 0 0 logic-8 1 =300 1 1 logic-9 r 0 reset 1 6. system performance analysis to make a system performance analysis total 20 trials have been made. the trials were successfully investigated, and no major error was observed. the below table 3 shows the performance test results. in this investigation, the commands were performed using the cloud-server followed by observation in actuation using the experimental setup described earlier in fig. 3 by the mobile application. fig. 9 represents the system performance test outputs in a graphical manner. table 3 system performance data table. no of obs. gas concentration https input actuator response elapsed time (sec) experimentation 1 170 (= = 0) 0 0 0 (start) success 2 173 (= = 0) 1 1 15.3 success 3 211 (= = 0) 0 0 20 success 4 288 (= = 0) 1 1 11 success 5 316 (= = 1) 0 1 7.5 success 6 375 (= = 1) 1 1 n/a no specified change 7 402 (= = 1) 0 1 n/a no specified change 8 287 (= = 0) 1 1 12 success 9 255 (= = 0) 1 1 n/a no specified change 10 221 (= = 0) 0 0 15.7 success 11 300 (= = 0) 0 0 n/a no specified change 12 300 (= = 0) 1 1 13.4 success 13 302 (= = 1) 2 1 error error 14 380 (= = 1) 4 1 error error 15 293 (= = 0) 0 0 12 success 16 319 (= = 1) r reset n/a reset of process 17 327 (= = 1) 1 1 18 success 18 289 (= = 0) 0 0 8 success 19 294 (= = 0) 1 1 11 success 20 277 (= = 0) 0 0 5 success industrial internet of things (iiot) 629 fig. 9 feedback and feedforward control from system performance test. all the evaluation shows that the total system behaves like an error free system. though the data processing time is a bit long (avg. 13 sec.) but the system behavior seemed better. this system processing delay can be optimized by using manual api and custom server. as thingspeak gives free access to students limiting browsing speed; so, no one can misuse it for commercial purpose. the below fig. 10 shows the graphical states of those experimental setup. this fabricated system can be used to prevent fig. 10 graphical presentation of monitored data; (a) relay state data; (b) temperature and rh data; (c) ppm concentration of lpg gas and (d) android application gui. 630 m. m. z. shahadat, a. mallik, m. m. islam accidents caused by gas leakage in home and industrials. in process, food, chemical and fertilizer industries various types of toxic-hydrocarbon based gases (may have ability to ignite fire) are used widely thus making the industries more viable to accidents due to unnoticed leakage of those gases. the fabricated prototype has almost 95% efficiency along with both feedback and feedforward control options which makes it more stable to monitor and prevent unnoticed gas leakage crossing a defined reference value. the implemented cloud server controlling (feedforward) actions prove the system‟s infinite (very long range) distance actuating capability but it is very necessary to get connected with isp for both controllers (transmitter and receiver). 6. system performance analysis the fabricated system run successfully, and 20 trials were performed to measure its performance. it showed no errors in those 20 trials which took almost 3 hours to execute. the control system took almost 13 seconds to perform necessary commands when signals came from the host server. this delay period can be overcome by using the premium version of thingspeak server. this delay period can be shortened up to 4 seconds as it is the minimal period of iot server refreshing. it is apparent from analyzed signals that the impulse response and the group delay response are seemed quite perfect if the baud rate (sampling frequency) tuning ranges from 11 to 12.6 khz. in this study, 11.52 khz sampling frequency is used. the power density spectrum of gas sensor is quite fine although the signal to noise ratio is comparatively higher. this can be overcome by using a 20-pf ceramic disk capacitor as it can work as a low pass filter. the overall system efficiency was about 95%, which is quite good for a robust controlling operation. acknowledgement: the authors gratefully acknowledge the financial support received from the university grant commission (ugc), bangladesh. the authors thank mr. s. m. asif hossain (dept. of electronics and communication engineering, kuet) and md. robiul islam (lecturer, dept. of mechatronics engineering, ruet) for their contributions in this study. references [1] j. wang, m. tong, x. wang, y. ma, d. liu, j. wu, d. gao & g. du, "preparation of h2 and lpg gas sensor", sensors and actuators b: chemical, vol. 84, no. 2-3, 95–97, 2002. [2] m. miftakul amin, m. azel aji nugratama, andino maseleno, miftachul huda, and kamarul azmi jasmi. "design of cigarette disposal blower and automatic freshner using mq-5 sensor based on atmega 8535 microcontroller." international journal of engineering & technology, vol. 7, no. 3, pp. 1108–1113, 2018. [3] n. sinha, k. eswari pujitha, and j. sahaya rani alex, "xively based sensing and monitoring system for iot", in proceedings of the ieee international conference on computer communication and informatics (iccci), 2015, pp. 1–6, 2015. [4] a. mallik, s. a. hossain, a. b. karim, & s. m. hasan, "development of local-ip based environmental condition monitoring using wireless sensor network", international journal of sensors, wireless communications and control, vol. 9, pp. 1–8, 2019. [5] k. keshamoni, and s. hemanth. "smart gas level monitoring, booking & gas leakage detector over iot", in proceedings of the 2017 ieee 7th international advance computing conference (iacc), pp. 330-332. 2017. [6] a. mallik, a. ahsan, m. m. z. shahadat and j. c. tsou. “man-in-the-middle-attack: understanding in simple words.” int. j. data networks and security, (2019) industrial internet of things (iiot) 631 [7] v. yadav, a. shukla, s. bandra, v. kumar, u. ansari, and s. khanna. "a review on iot based hazardous gas leakage detection & controlling system using microcontroller & gsm module." journal of vlsi design and signal processing, vol. 3, no. 1, 2017. [8] m. sharma, d. tripathi, n. p. yadav, and p. rastogi, "gas leakage detection and prevention kit provision with iot." gas, vol. 5, no. 02, 2018. [9] a. j. moshayedi, m. v. kukade, and d. gharpure, "electronic-nose (e-nose) for recognition of cardamom, nutmeg and clove oil odor", 2014. [10] v. v. alekseev, v. s. konovalova, and e. n. sedunova, "information-measurement and control system “smart house” as object of practice-oriented training of master's degree “instrumentation technology”", in proceedings of the international conference "quality management, transport and information security, information technologies"(it&qm&is), 2017, pp. 612–615. [11] s. i. sabilla, r. sarno, and j. siswantoro. "estimating gas concentration using artificial neural network for electronic nose", procedia computer science, vol. 124, pp. 181–188, 2017. [12] y. p. tsang, k. l. choy, c. h. wu, g. t. s. ho, h. y. lam, and p. s. koo. "an iot-based cargo monitoring system for enhancing operational effectiveness under a cold chain environment." international journal of engineering business management, vol. 9, 1847979017749063, 2017. [13] a. b. karim, a. z. hassan, and m. m. akanda. "monitoring food storage humidity and temperature data using iot." moj food process technol, vol. 6, no. 4, pp. 400–404, 2018. [14] j. mari, j. maja, j. robbins, "controlling irrigation in a container nursery using iot", aims agriculture and food, vol. 3, no. 3, pp. 205–215, 2018. [15] a. brandt, "a signal processing framework for operational modal analysis in time and frequency domain", mechanical systems and signal processing, vol. 115, pp. 380–393, 2019. [16] s. a. hossain, m. hossen, and s. anower, "estimation of damselfish biomass using an acoustic signal processing technique", journal of ocean technology, vol. 13, no. 2, 2018. [17] s. mariani, l. tarokh, i. djonlagic, b. e. cade, m. g. morrical, k. yaffe, k. l. stone et al, "evaluation of an automated pipeline for large-scale eeg spectral analysis: the national sleep research resource", sleep medicine, vol. 47, pp. 126–136, 2018. [18] tns tengku zawawi, a. r. abdullah, w. t. jin, r. sudirman, and n. m. saad, "electromyography signal analysis using time and frequency domain for health screening system task", international journal of human and technology interaction (ijhati), vol. 2, no. 1, pp. 35–44, 2018. [19] s. a. hossain, m. hossen, a. mallik, and s. mahmudul hasan, "a technical review on fish population estimation techniques: non-acoustic and acoustic approaches." akustika, vol. 31, pp. 87–103, 2019. [20] regalia, phillip. adaptive iir filtering in signal processing and control. routledge, 2018. [21] b. boashash, a. aïssa-el-bey, and m. f. al-sa‟d. "multisensor time–frequency signal processing matlab package: an analysis tool for multichannel non-stationary data", softwarex, 2018. [22] a. e. cohen, "automated hdl signal processing deployment performance from high level matlab specification for an unmanned aerial vehicle (uav)", in proceedings of the ieee 8th annual computing and communication workshop and conference (ccwc), 2018, pp. 900-905. ieee, 2018. [23] van drongelen, wim. signal processing for neuroscientists. academic press, 2018. [24] s. a. hossain, a. mallik, and md arefin, "a signal processing approach to estimate underwater network cardinalities with lower complexity", journal of electrical and computer engineering innovations, vol. 5, no. 2, pp. 131–138, 2017. [25] u. yilmaz, a. kircay, and s. borekci, "pv system fuzzy logic mppt method and pi control as a charge controller", renewable and sustainable energy reviews, vol. 81, pp. 994–1001, 2018. [26] w. he, t. meng, d. huang, and x. li, "adaptive boundary iterative learning control for an euler– bernoulli beam system with input constraint", ieee transactions on neural networks and learning systems, vol. 29, no. 5, pp. 1539–1549, 2018. [27] steven walczak, "artificial neural networks." in advanced methodologies and technologies in artificial intelligence, computer simulation, and human-computer interaction, pp. 40-53. igi global, 2019. 117890 facta universitatis series: electronics and energetics vol. 36, no 4, december 2023, pp. 533 551 https://doi.org/10.2298/fuee2304533j © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper multi–criteria home energy management system selection for the smart grid support aleksandar janjić1, lazar z. velimirović2, jelena d. velimirović2 1faculty of electronic engineering niš, niš, serbia 2mathematical institute of the serbian academy of sciences and arts, belgrade, serbia abstract. home energy management systems (hems) are increasingly used as a tool that creates optimal consumption and production schedules for smart grids, by considering objectives such as energy costs, environmental concerns, load profiles, and consumer comfort. multiple criteria selection of optimal hems seems to be superior to the traditional cost benefit assessment in measuring intangibles and soft impacts, introducing qualitative aspects in the analysis. this paper proposes an algorithm for the selection of optimal hems, using the fuzzy ahp method. this methodological framework provides a multi-criteria approach for estimating the benefits and costs of different hems within the smart grid uncertain environment. this method allows the decision makers to incorporate unquantifiable, asymmetrical, incomplete, nonobtainable information and partially ignorant facts into a decision model. four criteria and eleven performances for the optimal solution selection are defined. the method is successful in the evaluation of alternatives in the presence of heterogeneous criteria and uncertain environment. the methodology is illustrated on the choice of hems from the power distribution company perspective. it is concluded that the evaluation of weighting factors has a decisive character in the choice of the final one of several alternative variants. fuzzification of input values can also contribute to a more flexible view of the given problem and analysis of sensitivity to various input parameters. key words: home energy management system, fuzzy ahp, smart grid, multi-criteria decision making 1. introduction an energy management system (ems) is a set of interconnected and interactive elements used to establish energy policy and objectives and to accomplish those objectives. such a system is established on different hierarchical levels (home energy management system, individual organization, local community, national level). on the level of an individual received may 04, 2023; revised july 10, 2023; accepted september 23, 2023 corresponding author: aleksandar janjić faculty of electronic engineering niš, aleksandra medvedeva 14, 18000 niš, serbia. e-mail: aleksandar.janjic@elfak.ni.ac.rs 534 a. janjić, l. z. velimirović, j. d. velimirović organization, ems is defined by international standard iso 50001 [1]. the standard specifies the requirements for establishing, implementing, maintaining, and improving ems, which allows the organization to continually improve energy performance and energy efficiency. although the reason for deploying individual ems/hems is the increase of individual object efficiency, from the supply grid perspective, ems and hems indicators are strongly dependent on the efficiency of generation, transmission and distribution companies, integrating those efforts through the concept of a smart grid (sg). a sg refers to an electrical network that intelligently and symmetrically supplies electricity to all connected users through integration of their actions, in sustainable, economical, and safe way [2]. although the sg increase the utility efficiency (decrease of line losses, minimization of reactive power, more precise voltage control and increased flexibility), the sg should enhance utilities’ ability to monitor and measure the effectiveness of end-use energy-energy management programs, and to automatically manage energy costs on the consumer side. in this environment, hems can be used as a demand response tools creating optimal consumption and production schedules by considering aspects such as energy costs, environmental protection, load profiles, and consumer comfort [3]. the choice of adequate hems within the sg is a complex and difficult task, for several reasons: (1) presence of various technologies, programs and operational practice leading to a great number of alternatives; (2) existence of multiple criteria (economic, technical, environmental, etc.) to be met simultaneously, often incommensurable and incomparable; (3) proliferation of performance indicators with undefined assessment framework; (4) uncertain in assessing the relative importance of attributes and the performance ratings of alternatives with respect to attributes. so far, there are three main assessment frameworks for defining appropriate sg environment that are based on key performance indicators (kpi). firstly, the ec task force for sg defined benefits of the ideal sg’s services introducing a set of the appropriate kpis [3,4]. further, in [5], the ideal sg system is divided into thematic areas, while in [6] the sg is defined from the aspect of a metrics for measuring progress for achieving ideal sg, introducing attributes for supporting of sg. the main disadvantage of adopted kpi systems lays in a rather traditional treatment of costs benefit analysis as a final step in the ranking different sg alternatives. another disadvantage of traditional cost benefit analysis for promoting any energy efficiency program is that the methods that could lead to reliable data may be difficult or impossible to apply leading to a lack of confidence on a decision based only on benefit – cost ratio [6]. consequently, multiple criteria analysis appears as a better solution for measuring intangibles and soft impacts compared to cost benefit analysis; actually, it includes more than one criterion introducing qualitative aspects in the analysis. a first approach in sg assessment is based on evaluation of the contribution of hems strategies in achieving the “ideal sg” and its expected outcomes. this approach is conducted through the definition of suitable metrics and key performances. a second complementary approach is based on an appropriate multi-criteria decision analysis method-ology in order to assess the profitability of sg solutions and investments. in this paper, due to the above-mentioned constraints of the cost-benefit analysis, two alternative algorithms for the selection of the best hems deployment strategy for the sg concept are tested. the two new approaches include the fuzzy analytic hierarchy process (ahp) and multiplicative best-worst method (bwm) for multi-criteria decision making. the proposal of new assessment framework for the evaluation of the hems deployment multi–criteria home energy management system selection for the smart grid support 535 strategy can be considered as the contribution of this paper. those frameworks are based on the reduced performance indicator set obtained by the proper choice of qualitative and quantitative indicators. the evaluation is based on tree-level hierarchy with four main criteria on top and mix of quantitative and qualitative indicators on the second level, based on 11 adopted performances. the base level is the set of possible alternatives. the integrated assessment approach is realized through the definition of suitable metrics and key performances and multi-criteria decision analysis methodology. fuzzy analytic hierarchy process (fahp) and bwm methods for multi-criteria decision making have been tested and compared, considering the uncertainties of indicator evaluation. the paper tests the ability of these methods to evaluate the alternatives in the presence of heterogeneous criteria and uncertain environment. the remainder of the paper is organized as follows. after the brief overview of related work in this field, sg assessment frameworks and appropriate key performance indicators are presented in section 2. the multi-criteria decision approach in the sg planning, ahp and bwm methods are introduced in section 3. in section 4, the methodology is presented on the example of the choice of hems deployment strategy for one medium size power distribution company. concluding remarks regarding the results acquired by the two alternative methods and their comparisons are given in section 5. 2. smart grid assessment frameworks 2.1. related work one of the first attempts of the systematic approach to the definition of key energy performance indicators was in 2005 [7], in which the set of the 30 key energy performance indicators was included: 4 social, 16 economic and 10 environmental indicators. the ec task force for sgs [3], included kpis that represent a type of measure of performance to evaluate progress toward strategic goals. these goals are the progress toward the deployment of sg services and the progress toward the achievement of sg benefits. the european commission has defined the characteristics of the ideal sgs through adaption and extension of the doe/epri methodology in order to fit the european context [8,9]. built/value metrics and benefits/kpis are proposed as to measure progresses toward the ideal sg and outcomes. table 1 contains a list of benefits deriving from the implementation of a sg, according to [3]. the assessment framework proposed in [3] is based on a merit deployment matrix shown in table 2 with 11 benefits, corresponding 54 kpis and 33 functionalities linked to a service. for each project, the assessment is performed in two main steps: a) identify links between kpis, benefits and functionalities; b) explain how the link between kpis, benefits and functionalities is achieved in the project, and assign a weight to quantify how strong and relevant the link is. in this way, the impact of the projects in terms of functionalities, and the impact of the project in terms of benefits can be assessed. the impact of different projects to advance the sg concept can be realized using three different sets of kpis. the set-3 of kpis is defined directly by individual project coordinators and its purpose is evaluation of the individual projects. depending on their scope, the individual projects are then linked to the corresponding clusters. the set-2 kpis measure progresses in each cluster due to related projects. finally, the set-1 kpis measure progress in each cluster in turn contribute to the overall impact of the program. 536 a. janjić, l. z. velimirović, j. d. velimirović in circumstances, where intangible aspects are dominant [10,11], the traditional cost benefit analysis is not able to account for all the effects involved in development policies. the main disadvantage of the cost benefit approach is the conversion of all the effects in a common numerical and a single aggregate measure. that’s the reason why it is important to ensure a common reference for evaluation of the project proposals, in order to integrate the outcome of the kpi and of the economic analysis and come up with an overall project evaluation. multi-criteria decision making (mcdm) methods have been used substantially in the energy sector, such as site selection, project and equipment evaluation. the commonly used methods in domain of multi-criteria decision making are ahp, the technique for order of preference by similarity to ideal solution (topsis), electre, the analytic network process (anp) and multi-objective programming [12]. recently, a new method for solving the mcdm problems – the best-worst method (bwm) has been developed, that deals with the inconsistencies of the existing pairwise comparison-based methods, by suggesting a more structured way of deriving the weights based on pairwise comparisons [13]. each of these methods have its own properties with respect to the way of assessing criteria, the mathematical algorithm utilized, the application and computation of weights, the model to describe the system of preferences of the decision maker, and finally, the level of uncertainty embedded in the data set. the comprehensive review of different methods, their advantages and disadvantages of these methods is given in [14]. the fuzzy set theory is introduced into mcdm method in order to reflect the subjective preferences of experts more precisely, like the usage of fuzzy ahp to evaluate the renewable energy dissemination program [15-17]. on the other hand, owing to its superior performance regarding the consistency of the comparisons as well as lower requirements of comparison data, the bmw is taken into account as a mcdm method that produces rather reliable results. it has already been applied in solving environmental management issues as well as technological innovation analysis [18]. there are a few cases where bwm has been used in the field of energy efficiency [19], as well as water and sewage systems [20,21]. unlike classical ahp, the fuzzy ahp method is introduced to improve multiple criteria decision making for uncertain valuations and priorities. in this method, the data and preferences of experts are evaluated under fuzzy set environment [22]. the use of fuzzy set theory allows the decision makers to incorporate unquantifiable information, incomplete information, non-obtainable information and partially ignorant facts into decision model [23,24]. the problem of evaluation index system and weights and application of adjustable weight fuzzy evaluation in the distribution network is elaborated in [25]. in [26] both qualitative and quantitative variables in the design of a decision support system for solar plant site selection using fuzzy ahp are combined. the bwm method has been recently developed by rezaei [13], offering an improved technique for structuring pairwise comparisons. drawing on the problems of low consistency and the complexity of pairwise comparisons in ahp method, the bwm method overcomes these problems by introducing the best and the worst criterion, that serve as a reference for all the rest of the criteria to be compared with. in this sense, the experts only need to predefine the best and the worst criterion, cb and cw respectively, so the pairwise comparisons are only performed in reference to these two criteria. since the reference comparisons include only the comparisons of cb/cw with other criteria, the number of pairwise comparisons is significantly reduced compared to ahp, where multi–criteria home energy management system selection for the smart grid support 537 each criterion is compared to all other criteria. this way, the comparisons that add up to the complexity and the inconsistency of comparison are eliminated. table 1 smart grid benefits for stakeholder stakeholder benefits grid operator ▪ increased distribution network stability and performance ▪ optimized facility utilization and enhanced efficiency ▪ predictive maintenance and “self-healing” responses to system disturbances ▪ automated maintenance and operation ▪ new opportunities to improve grid security ▪ improved resilience to disruption ▪ increased lifespan of existing infrastructure ▪ reduction of technical losses grid user ▪ expanded deployment of feed-in tariffs by renewable energy sources ▪ more efficient peak energy demand with less detriment to the environment ▪ increased sustainability ▪ effective support of transnational electricity markets by load-flow control to alleviate loop-flows and increased interconnection capacities ▪ new services end customer ▪ option to plug-in electric vehicles and new energy storage options ▪ increasing reliability of power supply ▪ decentralized energy ▪ bills reduction ▪ decentralized renewable energy sources ▪ balancing energy consumption and production municipalities ▪ decentralized renewable energy sources ▪ positive image as an innovative community ▪ cost reduction through energy conservation and efficiency ▪ sustainability politics/society ▪ increased market competition ▪ new jobs ▪ achievement of climate targets ▪ securing the business location ▪ more efficient peak energy demand with less detriment to the environment industries ▪ new product opportunities ▪ new business areas table 2 merit deployment matrix functionality 1 ... functionality 33 benefit 1 kpi 1 0–1 ... 0–1 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... benefit 11 kpi 54 ... ... ... because of the main characteristic of the adopted sg evaluation framework and its complex hierarchical structure, the fuzzy ahp methodology for the project evaluation, structuring a decision into a hierarchy of criteria, sub-criteria and alternatives, as well as the alternative, the bwm methodology, is the basis of the methodology presented in this 538 a. janjić, l. z. velimirović, j. d. velimirović paper. the modified set of sg indicators, as the required input in mcdm fuzzy ahp methodology is presented in the next section. 2.2. smart grid indicators in order to evaluate sg solutions, total costs, benefits and the beneficiaries should be assessed, including both tangible and intangible criteria. risk and uncertainties are also present in the process of decision making, whether it is in presupposed data (consumption increase rate, prices, preferences) whether it is in decision factors of business environment that affect the process of decision making. the identification of sg beneficiaries is crucial, besides recognized benefits. most important beneficiaries are certainly consumers themselves, in terms of higher service quality, reduced businesses losses, energy savings and lower transport costs using electric vehicles. form the social perspective, sg, together with advanced metering infrastructure (ami) enables energy management companies to create opportunities for energy savings based on data from consumers’ smart meters. it is possible to measure the amount of saved energy and encourage more renewable energy resources. sg also benefits the utilities, since better understanding of the electrical grid's status in the real time environment results in greater efficiency and reliability. some questions in this approach deserve further discussion including: the treatment of immeasurable impacts (social and environmental effects); the measurement of social impact; collection and analysis of performance feedback from all stakeholders of electric power (providers, commercial and industrial consumers, vendors, regulators and research organizations); the combination of cost/benefit with kpi analysis. furthermore, a benefit to any one of mentioned stakeholders can in turn benefit the others. for example, those benefits that reduce costs for a distribution system opera-tor could lower prices, or prevent price increases, for customers. uncertainty with respect to the magnitude of benefits is present as well. see [27] for more detailed report on the requirements of the sg assessment framework. based on the above-mentioned reasons, the multi-layer hierarchical structure has been adopted in this paper. adopted layers include: the top layer of main criteria, performance layer consisting of 11 performances presented in table 3, a set of quantitative and qualitative indicators and the layer of possible alternatives that are combination of different actions on the field. each benefit is described by a set of quantitative and qualitative kpis. for example, increased sustainability is evaluated by the reduction of carbon emissions. this indicator measures the co2 emission per kwh of produced energy. 2.2.1. quantitative indicators the evaluation of the project is based on the analysis of project performance considering each kpi. one part of the analysis concerns a quantitative evaluation of kpis. the measurable indicators include reducing carbon emissions, voltage quality performance of electricity grids (e.g. voltage dips, voltage and frequency deviations and the level of losses in distribution networks (absolute or relative), or the net present value of the investment. the choice of quantitative indicators should not be constrained to the mentioned set of indicators, and it should reflect the real process multi–criteria home energy management system selection for the smart grid support 539 table 3 sg required performances no performance 1 increased sustainability 2 adequate capacity of transmission and distribution grids for “collecting” and bringing electricity to the consumers 3 adequate grid connection and access for all kinds of grid users 4 satisfactory levels of security and quality of supply 5 enhanced efficiency and better service in electricity supply and grid operation 6 effective support of transnational electricity markets by load flow control to alleviate loopflows and increased interconnection capacities 7 coordinated grid development through common european, regional and local grid planning to optimize transmission grid infrastructure 8 enhanced consumer awareness and participation in the market by new players 9 ability of consumers to make informed decisions related to their energy to meet the eu energy efficiency targets 10 creation of a market mechanism for new energy services such as energy efficiency or energy consulting for customers 11 consumer bills are either reduced or upward pressure on them is mitigated 2.2.2. qualitative indicators a number of indicators that cannot be quantified, such as social and environmental impacts and benefits are usually evaluated by the means of ordinal comparison. for the purpose of evaluating such indicators, in our assessment methodology, we use five-grade verbal scale, derived from opinion polls, expert opinions or integrated approach. for the sake of illustration, the environmental and social indicators and the quantitative five grade verbal scales are reported below: a) environmental impact; ▪ minor grade, with no substantial environmental impact. ▪ low grade, with no visual and noise problems. ▪ moderate grade, with certain visual or noise problems, creating disruption to the environment but not affecting the wildlife. ▪ high grade, with increased pollution, impact to the wildlife and landscape. ▪ very high grade, with large emission pollutants and life-cycle steps contributing significantly to the total environmental impact. b) social benefits; ▪ minor grade, with local economy unaffected or without enhancement in market services. ▪ low grade, creating new jobs, but retaining risk of new renewable energy sources. ▪ moderate grade, with new market mechanism for energy services (energy efficiency or energy consulting). ▪ high grade, with improvement of market mechanisms and customer service, creating and retaining jobs. ▪ very high grade, involving consumers in energy usage and management, new jobs created and retained. a clearly defined framework can concretize where exactly the project contributed to a smart electricity grid. the presence of both quantitative and qualitative indicators is the rationale for introducing the multi-criteria decision making (mcdm) methods explained in the next section. 540 a. janjić, l. z. velimirović, j. d. velimirović 3. multi-criteria assessment model multi-criteria decision-making deals with decisions involving the choice of a best alternative from several potential candidates in a decision, subject to several criteria or attributes that may be tangible or intangible. sg planning is a difficult process of decision making, because the asset management in power utilities relates the balancing of costs, performance and risk. the number and structure of these categories is changing, depending of particular conditions (legislative, regulatory requirements etc.) but four main criteria defined in the previous section are the basic attributes. their simultaneous treatment is a difficult task, solved mainly in two ways: ▪ the contribution of each project component is analysed and evaluated regarding criteria defined above. then, introducing weighting factors, influence of each criterion is reduced to one measuring unit (e.g. monetary) [28]; ▪ for each project, the aggregation of individual criteria is made, resulting in one general index. this index is formed based on estimated benefits and condition of asset regarding required criteria, and their weighting factors [29,30]. the disadvantage of these methods is non-realistic approach of reducing all criteria to just one value, and great sensibility to weighting of criteria. these disadvantages are surpassed by multi-criteria optimization. for that reasons, techniques of multi criteria decision analysis (mcda) become more and more needed in the power system sustainable development planning. mcda is a scientific discipline that deals with methods and procedures for solving problems with several, often conflict criteria. the mathematical model has following structure: 1 2{ ( ), ( ), , ( ), 2}nmax f x f x f x n  (1) under condition 1 2 3[ , , , ]x a a a a = , where: fj criteria function, j = 1, 2, ..., n, ai alternatives, i = 1, 2, ..., m, a feasible set of actions. a multi-criteria decision problem is most often represented through the matrix, with the elements representing the out-comes scores that can be quantitatively or qualitatively expressed. the analysis is based on a set of values and preferences of the decision maker, with different weights for comparison of criteria. the choice of particular method depends on available information of preferences and attributes. in cases of certainty about the outcomes, alternatives and consequences are directly corresponding in terms of the criteria. moreover, these outcomes are deterministic. in situations of uncertainty the outcomes can be assigned many possible values that are difficult to express. the description of the out-comes under uncertainty can be quantitative (using probabilistic quantities), fuzzy, or qualitatively (through verbal descriptions) – in situations when outcomes are not fully known or understood. considering the specifics and the hierarchical structure of the adopted sg evaluation framework, we evaluate two mcdm methods: the fuzzy ahp, that structures a decision into a hierarchy of criteria, sub-criteria and alternatives as well as the bwm that offers a different structure of the comparisons. using pairwise comparisons of two (sub) criteria or alternatives, both models generate inconsistency ratios and assign weights to the criteria and alternatives. for testing the robustness of the priorities, sensitivity analysis can be applied. multi–criteria home energy management system selection for the smart grid support 541 several factors can cause imprecisions in assessing the relative importance of attributes and the performance ratings of alternatives with respect to attributes. all indicators (quantitative and qualitative) affect four main criteria in the extent determined by the decision maker. for instance, reduced voltage deviation and stable voltage profile in the network can induce the usage of advanced technologies and services; this will decrease the costs of low power quality and increase the customer satisfaction. the complete algorithm for the ranking of hems strategies is explained below: ▪ goal of the analysis. the goal is ranking various hems strategies; ▪ identification of stakeholders, performances criteria, sub-criteria, and alternatives. criteria for hems strategies selection are technology, costs, users’ satisfaction and environmental protection. sub-criteria are chosen from the list of benefits. ▪ hierarchical structure formation. the method is structuring a problem in the hierarchical form: the first level considers relevant criteria (four main identified criteria); the second level considers relevant performances (chosen from eleven identified sub-criteria); and the third level defines hems alternative strategies. ▪ pairwise comparison. the fuzzified saaty’s scale, as shown in table 4 has been used for the pair wise comparison of elements at each level. the fuzzification is implemented by triangular fuzzy numbers with the value of fuzzy distance of 2 (for instance, fuzzy number (1,1,3) is used for 1, etc.). table 4 crisp and fuzzified saaty’s scale [31] crisp values (x) judgment description fuzzy values 1 equal importance (1, 1, 1+δ) 3 week dominance (3-δ, 3, 3+δ) 5 strong dominance (5-δ, 5, 5+δ) 7 demonstrated dominance (7-δ, 7, 7+δ) 9 absolute dominance (9-δ, 9, 9) 2, 4, 6, 8 intermediate values (x-1, x, x+1) the comparison results are presented in the form of the square matrix , 1, [ ] j ji ii j n a a a = =  is the fuzzy value about the relative importance of criteria i over criteria j, where 1~ = jia for i = j and jj ii aa ~/1~ = for i  j. pairwise comparisons at each level, starting from the top of the hierarchy, are presented in: ▪ priority weights vectors evaluation. the ranking procedure starts with the determination of criteria weighting vector: 1 2 3 4 ( , , , )t c c c c cw w w w w= . (2) elements of criteria weighting vector are determined as: 4,3,2,1,~~ 1 4 1 4 1 4 1 =      = − = ==  iaaw i j i j ic jji . (3) performance weighting vectors are defined by pairwise comparison of performance according to every single criterion. appropriate elements of this vector, according to equation (2), are calculated as follows: 542 a. janjić, l. z. velimirović, j. d. velimirović 1 5 1 4 1 4 1 ~~ − = ==       =  i j i j ii jjj aax , (4) where xij represents the fuzzy weights of the i-th performance with respect to the j-th criterion. final performance weights are derived through the aggregation of the weights at two consecutive levels, i.e. multiplying performance weights by criteria weights: 1 2 3 4 5 ( , , , , )t sc c sc sc sc sc scw x w w w w w w=  = . (5) finally, the hems strategies are compared according to the relevant performance. proper weights of projects for individual performance are determined according to equation (6), as follows: 1 3 1 5 1 5 1 ~~ − = ==       =  i j i j ii jjj aay , (6) where yij represents the fuzzy weights of the i-th project with respect to the j-th performance. final hems strategies weights are obtained by multiplying the weights of the projects and the final performance weights: 1 2 3 ( , , ) t a sc a a aw y w w w w=  = . (7) ▪ defuzzification and the final ranking of alternatives. in this paper triangular fuzzy numbers are ranked by applying the total integral value method. alternatively, determining the weights of the defined criteria can be performed by the bwm, following the next five steps: step 1. determining the decision criteria, {c1, c2,…,cn}.. step 2. choosing the best, cb, and the worst, cw criterion. step 3. performing the comparisons in reference to the best criterion cb the resulting best-to-others (bo) vector would be: 1 2 ( , , , ) nb b b ba a a a= , where abj indicates the preference of the best criterion b over criterion j. step 4. performing the comparisons in reference to the worst criterion cw. the resulting others-to-worst (ow) vector would be: 1 2( , , , ) w w w t w na a a a= , where ajw indicates the preference of the criterion j over the worst criterion w. step 5. using the optimization models to calculate the weights. the optimal weights for the criteria is the one where, for each pair of wb / wj and wj / ww, we have wb / wj = abj and wj / ww = ajw. to satisfy these conditions for all j, we should find a solution where the maximum absolute differences | wb / wj = abj | and | wj / ww = ajw | for all j is minimized. the proposed methodologies are applied on the choice of the optimal home energy management program within a sg deployment of the medium size power distribution company. multi–criteria home energy management system selection for the smart grid support 543 4. case study utilities recognize the need to provide better information to customers about the cost of supply and the time-specific us-age levels. customers are becoming aware of new technologies that make modifying usage easier to accomplish, reducing electricity costs. planners proposed three different development alternatives with the description of proposed actions, the number of installed device and their unit installation prices given in table 5. table 5 different development alternatives no description of the proposed action per unit costs ($) alt. 1 alt. 2 alt. 3 1 in home displays 187 10.000 5.000 3.000 2 direct load control devices 2.242 1.000 2.000 4.000 3 programmable communicating thermostats 549 3.000 2.000 1.000 4 smart appliances 2.767 200 500 200 the proposed development alternatives provide both qualitative and quantitative benefits. with the additional in-formation that the in-home display (ihd) provides the consumer, customers would use the real-time metering data available on the ihd to better understand their total energy consumption patterns and those of individual appliances. customers would find the estimated bill information provided on the ihd useful in managing the energy usage costs. studies have shown that ihd users may reduce their overall energy consumption by as much as 2-7%. the increased number of smart appliances determines the grid connection (owing to the enhanced low voltage network management) and transparent information to consumers. direct load control can significantly delay or avoid network investments and reduce the need for peaking generators. the technologies underpinning demand management may also produce other benefits, such as those associated with remote metering and the provision of information on energy consumption to consumers. the performance indicators for different alternatives are presented in table 6. table 6 quantitative aggregated performance indicators for different alternatives no performance indicator project 1 project 2 project 3 1 energy losses reduction [mwh/year] 3.000 8.000 11.000 2 quantified reduction of carbon emissions (t) 5.400 14.000 19.000 3 installation costs (mio. $) 6.300 7.900 10.600 the paper does not aim to provide the detailed calculation of these parameters. energy loss reduction is caused by the direct load control and peak power shaving enabling the economic line loading. decrease in energy losses is reducing the carbon emission. final quantitative value is related to the installation costs based on per unit costs. concerning the qualitative indicators, all of these actions are evaluated with moderate grade of social benefit, including market mechanisms for innovative energy services such as energy efficiency or energy consulting for customers. the hierarchy of adopted criteria, performances and indicators is given in figure 1. some of performances listed in table 3 are not applicable for this particular case study (performance concerning the transmission level) resulting in reduced number of performances. 544 a. janjić, l. z. velimirović, j. d. velimirović fig. 1 hierarchical scheme of criteria, selected performances and indicators the multi criteria algorithm begins with expert’s pairwise comparison of the criteria: technology improvement (c1), costs (c2), customer satisfaction (c3) and environmental protection (c4). the results are shown in table 7. in the second step, experts choose adequate benefits from the list of benefits and appropriate indicators. in this particular case, 5 performances are recognized: (sc1) enhanced efficiency and better service in electricity supply and grid operation; (sc2) enhanced consumer awareness and participation in the market by new players; (sc3) ability of consumers to make informed decisions related to energy efficiency targets; (sc4) creation of a market mechanism for new energy services such as energy efficiency or energy consulting for customers; (sc5) consumer bills are either reduced or upward pressure on them is mitigated. the selection of appropriate sub-criteria and associated kpi is given in table 8. multi–criteria home energy management system selection for the smart grid support 545 table 7 the pairwise comparison, fuzzy weights, final weights and ranks of criteria c1 c2 c3 c4 fuzzy weights icw c1 1 ~ 3 ~ 5 ~ 5 ~ (0.1967, 0.5303, 1.3141) c2 13 ~− 1 ~ 3 ~ 3 ~ (0.0787, 0.2778, 0.7885) c3 15 ~− 13 ~− 1 ~ 1 ~ (0.0576, 0.0960, 0.3504) c4 15 ~− 13 ~− 11 ~− 1 ~ (0.0412, 0.0960,0.2190) λ=0.5 λ=1.0 fws rank fws rank 0.5096 1 0.5023 1 0.2819 2 0.2904 2 0.1189 3 0.1216 3 0.0896 4 0.0858 4 table 8 sub-criteria and kpi selection sub-criteria kpi kpi type performance description sc1 co2 reduction quantitative increased sustainability sc2 energy losses quantitative enhanced efficiency and better service in electricity supply and grid operation sc3 social benefit qualitative creation of a market mechanism for new energy services such as energy efficiency or energy consulting for customers sc4 number of ihd installed quantitative enhanced consumer awareness and participation in the market by new players sc5 installation costs quantitative consumer bills are either reduced or upward pressure on them is miti-gated both qualitative and quantitative indicators are included in the pairwise comparison made by experts, as presented in tables 9 to 12. table 9 the pairwise comparison matrix of sub-criteria in relation to technology sc1 sc2 sc3 sc4 sc5 fuzzy weights 1i x sc1 1 ~ 13 ~− 3 ~ 17 ~− 17 ~− (0.0304, 0.0799, 0.1917) sc2 3 ~ 1 ~ 5 ~ 15 ~− 15 ~− (0.0662, 0.1625, 0.3540) sc3 13 ~− 15 ~− 1 ~ 17 ~− 17 ~− (0.0196, 0.0315, 0.0708) sc4 7 ~ 5 ~ 7 ~ 1 ~ 1 ~ (0.1880, 0.3631, 0.7512) sc5 7 ~ 5 ~ 7 ~ 11 ~− 1 ~ (0.1796, 0.3631, 0.6994) 546 a. janjić, l. z. velimirović, j. d. velimirović table 10 the pairwise comparison matrix of sub-criteria in relation to costs sc1 sc2 sc3 sc4 sc5 fuzzy weights 2i x sc1 1 ~ 15 ~− 17 ~− 15 ~− 15 ~− (0.0202, 0.0323, 0.0635) sc2 5 ~ 1 ~ 7 ~ 3 ~ 3 ~ (0.1446, 0.3522, 0.7788) sc3 7 ~ 17 ~− 1 ~ 15 ~− 15 ~− (0.0841, 0.1583, 0.3134) sc4 5 ~ 13 ~− 5 ~ 1 ~ 1 ~ (0.1078, 0.2286, 0.5480) sc5 5 ~ 13 ~− 5 ~ 11 ~− 1 ~ (0.0990, 0.2286, 0.4903) table 11 the pairwise comparison matrix of sub-criteria in relation to the customer satisfaction sc1 sc2 sc3 sc4 sc5 fuzzy weights 3i x sc1 1 ~ 1 ~ 13 ~− 15 ~− 17 ~− (0.0295, 0.0450, 0.1395) sc2 11 ~− 1 ~ 17 ~− 17 ~− 17 ~− (0.0200, 0.0409, 0.0656) sc3 3 ~ 7 ~ 1 ~ 1 ~ 5 ~ (0.1323, 0.2860, 0.6305) sc4 5 ~ 7 ~ 11 ~− 1 ~ 13 ~− (0.1147, 0.2411, 0.4791) sc5 7 ~ 7 ~ 5 ~ 3 ~ 1 ~ (0.1804, 0.3870, 0.7818) table 12 the pairwise comparison matrix of sub-criteria in relation to the environmental protection sc1 sc2 sc3 sc4 sc5 fuzzy weights 4i x sc1 1 ~ 3 ~ 3 ~ 5 ~ 5 ~ (0.1414, 0.4315, 1.1819) sc2 13 ~− 1 ~ 1 ~ 3 ~ 3 ~ (0.0660, 0.2115, 0.7091) sc3 13 ~− 11 ~− 1 ~ 3 ~ 3 ~ (0.0555, 0.2115, 0.6146) sc4 15 ~− 13 ~− 13 ~− 1 ~ 1 ~ (0.0399, 0.0728, 0.2994) sc5 15 ~− 13 ~− 13 ~− 11 ~− 1 ~ (0.0295, 0.0728, 0.2049) the final vector of fuzzy weights of the performance of the projects, according to equation (5), table 5, and tables 7-12, is: ( ) ( ) ( ) ( ) ( ) 5 4 4 1 5 1 0.0151,0.0971,0.6097 0.0283,0.2082,1.2576 [ ] [ ] [ ] 0.0204,0.1084,0.6957 0.0537,0.2862,1.6527 0.0547,0.3002,1.6245 j j isc c i c scw x w x w w           =  =  = =          . (8) at the end, three hems strategies (project 1 [a1], project 2 [a2], and project 3 [a3]) are compared in relation to performance presented in tables 3 and 4 as presented in table 13. multi–criteria home energy management system selection for the smart grid support 547 table 13 the pairwise comparison of alternatives in relation to performance a1 a2 a3 fuzzy weights 1i y sc1 a1 1 ~ 13 ~− 15 ~− (0.0601,0.1031,0.2731) a2 3 ~ 1 ~ 13 ~− (0.0985,0.2915,0.8194) a3 5 ~ 3 ~ 1 ~ (0.2239,0.6054,1.5217) sc2 a1 1 ~ 13 ~− 15 ~− (0.0601,0.1031,0.2731) a2 3 ~ 1 ~ 13 ~− (0.0985,0.2915,0.8194) a3 5 ~ 3 ~ 1 ~ (0.2239,0.6054,1.5217) sc3 a1 1 ~ 3 ~ 5 ~ (0.2239,0.6054,1.5217) a2 13 ~− 1 ~ 3 ~ (0.0985,0.2915,0.8194) a3 15 ~− 13 ~− 1 ~ (0.0601,0.1031,0.2731) sc4 a1 1 ~ 3 ~ 5 ~ (0.2239,0.6054,1.5217) a2 13 ~− 1 ~ 3 ~ (0.0985,0.2915,0.8194) a3 15 ~− 13 ~− 1 ~ (0.0601,0.1031,0.2731) a1 1 ~ 13 ~− 15 ~− (0.0567,0.0916,0.2225) a2 3 ~ 1 ~ 5 ~ (0.2113,0.5378,1.2398) sc5 a3 5 ~ 15 ~− 1 ~ (0.1751,0.3705,0.7947) the final vector of fuzzy weights for hems strategies, according to equation (7) is: ( ) ( ) ( ) 3 5 5 1 0.0223,0.2979,3.7493 [ ] [ ] 0.0231,0.3655,5.4684 0.0237,0.3367,4.7738 j ia sc i scw y w y w      =  =  =       . (9) after the defuzzification of final weights vectors of performance and projects, they are ranked. the ranking results are shown in table 14. table 14 ranking sub-criteria and hems strategies λ=0.5 λ=1.0 fws rank fws rank sub-criteria (performances) co2 reduction (sc1) 0.1022 5 0.1033 5 energy losses (sc2) 0.2125 3 0.2143 3 social benefit (sc3) 0.1164 4 0.1176 4 number of ihd installed (sc4) 0.2844 2 0.2835 1 installation costs (sc5) 0.2845 1 0.2814 2 hems strategy project 1 (a1) 0.2719 3 0.2700 3 project 2 (a2) 0.3874 1 0.3891 1 project 3 (a3) 0.3406 2 0.3409 2 548 a. janjić, l. z. velimirović, j. d. velimirović based on the calculations, it can be concluded that the method can give several evaluation frameworks. the first one is the main criteria ranking. for this particular customer group, the most important criterion for the selection of energy management strategy is the improvement of the technology, followed by the costs, the customer satisfaction and the environmental protection. technological advancements increase the efficiency and security of energy supply, at the same time increasing user satisfaction and protecting the environment. the second evaluation level is the ranking of sub-criteria, where reduced customer bills (sc5) proved to be the dominant category. the final ranking of the alternatives indicates that the a2 project was assigned the highest rank, a3 project is the second; the lowest priority has the a1 project. this indicates that strategy 2 for the implementation of the hems should be selected, with the most balanced number of installed devices (thermo-stats, in home displays, directly controlled devices). the alternative 2, gives however, advantage to the installation of smart appliances. the authors came to the same conclusion if we analyse this problem using bwm. bwm technique uses pairwise comparison to obtain the weights of the criteria. after identifying all the criteria, an expert determines the best and the worst criterion, and then the comparison can be performed. table 15 shows the best and the worst criterion, in this case sub-criterion, and their comparison to other sub-criteria with a scale of 1-9. obtained comparison values are presented in the table 15. table 15 pairwise comparison matrix of bwm j criteria best sc5 jba worst sc1 wj a j1 sc1 5 1 j2 sc2 3 3 j3 sc3 4 2 j4 sc4 2 4 j5 sc5 1 5 using the linear bwm to solve this problem we get the weights for every subcriterion given in the table 16. the consistency ratio is 057.0= . table 16 criteria weights using bwm j criteria weight j1 sc1 0.072 j2 sc2 0.158 j3 sc3 0.118 j4 sc4 0.237 j5 sc5 0.416 the performance matrix based on which we came to the best decision is the following (10-point scale): 1 2 3 4 5 1 2 3 4 3 8 9 2 6 7 5 8 9 10 9 3 2 5 sc sc sc sc sc a p a a     =       . using the function  = = n j iji j pwv 1 we multi–criteria home energy management system selection for the smart grid support 549 obtained the overall values for each considered project (v1 = 4.671, v2 = 7.768, v3 = 5.05). it can be concluded that the best solution is project a2. the results show that by applying different methods different results are obtained. in the case of applying the ahp method, for 2 different values of the interval λ (0.5 and 1), alternative 3 was chosen as the best, while in the case of applying the bwm method, the best solution is project 2. these results are shown in figure 2. the reasons should be sought in to the fact that even the evaluation of criteria weights is different in certain methods. figure 3 shows that in the case of the bwm method, more weight is given to criterion sc5 (costs), while in the case of the ahp method, these criteria are fairly equal. fig. 2 best solution comparison according to different methods fig. 3 criteria weighting according different methods based on this analysis, it can be concluded that the evaluation of weighting factors has a decisive character in the choice of the final one of several alternative variants. fuzzification of input values can also contribute to a more flexible view of the given problem and analysis of sensitivity to various input parameters. in accordance with the nature of the proposed methods, the available resources, and the research objectives, the validation was done by a combination of simulation and modeling, 550 a. janjić, l. z. velimirović, j. d. velimirović comparative analysis, expert evaluation, and sensitivity analysis. based on expert evaluations, a sensitivity analysis was performed, which includes varying input parameters and assessing how the method responds. using computer simulations and modeling, the proposed method is validated. also, comparative analysis, which enables the comparison of methods, contributes to the confirmation of the results obtained through the use of computer simulations and modeling. 5. conclusion an improved framework for assessing home energy management programs from the smart grid perspective is pro-posed and verified. this framework is based on the reduced performance indicator set obtained by the proper choice of qualitative and quantitative indicators. the integrated assessment approach is realized by defining appropriate metrics and key performances, establishing the strict hierarchical scheme of main criteria, subcriteria, their quantitative and qualitative indicators and possible alternatives. this scheme avoids the ambiguities in the sg benefits evaluation. using fuzzy ahp method the uncertainties of indicator evaluation can be easily overcome. the method is tested on the case of evaluation of three hems strategy alternatives in the presence of heterogeneous criteria and uncertain environment. bwm technique generally proves to be easy to understand, as well as to apply in this context. with respect to the ahp, it requires fewer comparisons, less data and is more consistent and reliable. acknowledgement: this work was supported by the serbian ministry of education, science and technological development through the mathematical institute of the serbian academy of sciences and arts. references [1] international organization for standardization. energy management systems requirements with guidance to use (iso 50001:2011), 2011. [2] s. l. arun and m. p. selvan, "smart residential energy management system for demand response in buildings with energy storage devices", front. energy, vol. 13, pp. 715-730, 2018. [3] european commission task force for smart grids. expert group 2: regulatory recommendations for data safety, data handling and data protection, 2010. [4] european commission task force for smart grids. expert group 3: roles and responsibilities, 2010. [5] european electricity grid initiative (eegi). roadmap 2010-18 and detailed implementation plan 201012, 2010. [6] l. p. neves, a. g. martins, c. h. antunes and l. c. dias, "a multi-criteria decision approach to sorting actions for promoting energy efficiency", energy policy, vol. 36, no. 7, pp. 2351-2363, 2008. [7] commission of european communities. green paper – a european strategy for sustainable, competitive and secure energy, brussels, 2006. [8] european commission. guidelines for conducting cost-benefit analysis of smart grid projects. reference report joint research centre, institute for energy and transport, 2012. [9] european commission. guidelines for cost benefit analysis of smart metering deployment. scientific and policy report joint research centre, institute for energy and transport, 2012. [10] epri (electric power research institute). methodological approach for estimating the benefits and costs of smart grid demonstration projects. paloalto, ca: epri. 1020342, 2010. [11] s. h. c. cherukuri and b. saravanan, "an overview of selected topics in smart grids", fron. energy, vol. 10, no. 4, pp. 441-458, 2016. multi–criteria home energy management system selection for the smart grid support 551 [12] s. s. reddy, v. sandeep and c. m. jung, "review of stochastic optimization methods for smart grid", front. energy, vol. 11, no. 2, pp. 197-209, 2017. [13] j. rezaei, "best-worst multi-criteria decision-making method", omega, vol. 53, pp. 49-57, 2015. [14] d. choudhary and r. shankar, "an steep-fuzzy ahp-topsis framework for evaluation and selection of thermal power plant location: a case study from india", energy, vol. 42, no. 1, pp. 510-521, 2012. [15] e. heo, j. kim, k. j. boo, "analysis of the assessment factors for renewable energy dissemination program evaluation using fuzzy ahp", renewable and sustainable energy reviews, vol. 14, no. 8, pp. 2214-2220, 2010. [16] o. taylan, d. kaya and a. demirbas, "an integrated multi attribute decision model for energy efficiency processes in petrochemical industry applying fuzzy set theory", energy convers. manag., vol. 117, pp. 501-512, 2016. [17] j. ren and b. k. sovacool, "enhancing china’s energy security: determining influential factors and effective strategic measures", energy convers. manag., vol. 88, pp. 589-597, 2014. [18] m. brunelli and j. rezaei, "a multiplicative best–worst method for multi-criteria decision making", oper. res. lett., vol. 47, no.1, pp. 12-15, 2019. [19] p. gupta, s. anand and h. gupta, "developing a roadmap to overcome barriers to energy efficiency in buildings using best worst method", sust. cities soc., vol. 31, pp. 244-259, 2017. [20] j. ren, h. liang, f. t. chan, "urban sewage sludge, sustainability, and transition for eco-city: multicriteria sustainability assessment of technologies based on best-worst method", technol. forecast. soc. change, vol. 116, pp. 29-39, 2017. [21] j. ren, "technology selection for ballast water treatment by multi-stakeholders: a multi-attribute decision analysis approach based on the combined weights and extension theory", chemosphere, vol. 191, pp. 747-760, 2018. [22] o. duru, e. bulut and s. yoshida, "regime switching fuzzy ahp model for choice-varying priorities problem and expert consistency prioritization: a cubic fuzzy-priority matrix design", expert syst. appl., vol. 39, no. 5, pp. 4954-4964, 2012. [23] o. kulak, m. b. durmuşoğlu and c. kahraman, "fuzzy multi-attribute equipment selection based on information axiom", j. mater. process. technol., vol. 169, no. 3, pp. 337-345, 2005. [24] a. janjic, s. savic, g. janackovic, m. stankovic and l. velimirovic, "multi-criteria assessment of the smart grid efficiency using the fuzzy analytic hierarchy process", fu elec. energ., vol. 29, no. 4, pp. 631-646, 2016. [25] z. lu, f. wang, l. zhu and l. ma, "application of adjustable weight fuzzy evaluation in the distribution network". in proceedings of the 2nd international ieee conference on power electronics and intelligent transportation system (peits), 2009, pp. 313-316. [26] a. kengpol, p. rontlaong and m. tuominen, "design of a decision support system for site selection using fuzzy ahp: a case study of solar power plant in north eastern parts of thailand", in proceedings of ieee picmet'12: technology management for emerging technologies, 2012, pp. 734-743. [27] eurelectric report. the smartness barometer how to quantify hems strategies and interpret results, 2012. [28] n. h. afgan and m. g. carvalho, "multi-criteria assessment of new and renewable energy power plants", energy, vol. 27, no. 8, pp. 739-755, 2002. [29] h. aras, ş. erdoğmuş and e. koç, "multi-criteria selection for a wind observation station location using analytic hierarchy process", renew. energy, vol. 29, no. 8, pp. 1383-1392, 2004. [30] s. k. lee, g. mogi and j. w. kim, "decision support for prioritizing energy technologies against high oil prices: a fuzzy analytic hierarchy process approach", j. loss prev. process ind., vol. 22, no. 6, pp. 915-920, 2009. [31] b. srdjevic and y. d. p. medeiros, "fuzzy ahp assessment of water management plans", water resour. manag., vol. 22, no. 7, pp. 877-894, 2008. instruction facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 89 100 doi: 10.2298/fuee1601089z inkjet printed resistive strain gages on flexible substrates  čedo žlebič 1 , ljiljana živanov 1 , aleksandar menićanin 2 , nelu blaž 1 , mirjana damnjanović 1 1 faculty of technical sciences, university of novi sad, novi sad, serbia 2 institute for multidisciplinary research, university of belgrade, belgrade, serbia abstract. in this paper, resistive strain gages designed and fabricated in inkjet printing technology with three different silver nanoparticle inks are presented. inks have different ag content (15, 20 or 25wt%) and solvents (water type or organic type). strain gages were printed on a 50µm thick polyimide and 140 µm thick pet-based substrate with different printer types (professional and desktop). all printed sensors have the same size (17mm×5mm). to determine the change of resistance due to bending of the steel beam, tensile tests were performed up to 1500 microstrains. due to performed cycles of loading and unloading of the steel beam, gauge factor and stability of the response of the strain gages are measured. resistance change was measured with keithley sourcemeter 2410. for acquisition of measured data, in-house software tool was developed. measured gauge factors of the sensors are in the range between 1.07 and 2.03 (depending on a used ink, substrate and printer). results of this research indicate the strain gages with good gf can be produced even with low-cost equipment, such as desktop printer epson c88+ and pet-based substrate. key words: resistive strain gage, inkjet printing, silver nanoparticles, flexible substrate 1. introduction strain sensors are one of the most critical devices required for structural health monitoring, damage detection, condition-base maintenance and failure prevention. although some promising technologies are emerging into the market, still about 50 % of all strain sensors rely on a strain gage principle. strain gage provides benefits, like low price, simple measurement circuits and easy configuration etc. strain sensors can be fabricated in different technologies. in [1], pt and nicr strain sensors with cu interconnection lines were fabricated on polyimide sheets using a dc magnetron sputtering system, and a base pressure in a 10 −7 torr range. sensors and interconnections were photolithographically patterned, using either a lift-off process (with received september 18, 2014; received in revised form july 24, 2015 corresponding author: ĉedo žlebiĉ faculty of technical sciences, university of novi sad, trg dositeja obradovića 6, 21000 novi sad, serbia (e-mail: cedoz@uns.ac.rs) 90 ĉ. žlebiĉ, a. menićanin, n. blaž, lj. živanov, m. damnjanović a negative photoresist) for pt and nicr, or by a chemical etching (and a positive photoresist) for cu interconnection lines. these pt thin film sensors have gauge factor gf 1.7. in [2], an aerosol-jet printing was applied to fabricate strain sensors. using the maskless fine feature deposition characteristics of this printing technology and a pre-cure protocol, strain sensors were successfully printed onto carbon fiber prepregs, to enable fabricating composites with intrinsic sensing capabilities. measured gf of these sensors was in the range 2.2 ± 0.06. strain sensing architectures, such as smart flexible sensors adapted to textile structures, are able to measure their strain deformations. the optimization of the sensors, in terms of dimensions, geometry, preparation process, and filler concentration, has led to a sensitive, reliable strain gage, which can be easily deposited on any flexible substrate, such as a textile fabric [3]. the advantages of inkjet printing technology are high-speed of the process, the efficient use of ink materials, patterning capability, and the fact that thin films can be printed on flexible substrates, at low costs. results obtained from the characterization survey showed coherence between the expected trend and the experimental behavior, and have encouraged future efforts towards the use of inkjet printing technology for the rapid prototyping of strain gages and other sensing architectures [4]. in our previous research, we fabricated and compared resistive and capacitive strain gage sensors [5]. both were fabricated on polyimide substrate using inkjet printing technology. however, the capacitive sensors proved to be ineffective for measuring strain on metallic specimen, due to parasitic capacitance. the aim of this work was to investigate the influence of three different nanoparticle inks and flexible substrates on the characteristics of single-element gages. some improvements in design were introduced, in order to provide better stability of structures. the response was measured up to 30 minutes period. gages can be integrated into light-weight structures for purpose of monitoring. focus of this investigation was on inkjet silver inks and flexible substrates for sensing tensile and compressive strain on the steel surface. 2. strain gages fabrication the printing of inks, especially those containing silver nanoparticles, has been found to be a crucial tool for direct patterning of electrically conductive interconnections in electronic devices [6-8]. a drawback for the widespread application of printing processes is the availability of suitable printable materials. a formulation of a suitable ink is a critical phase, as the performance or quality of the printing process strongly depends on the ink. a low tendency for sedimentation and properly adjusted behaviour of the liquid carrier matrix are essential for a reliable printing process [9]. first two series of tested strain gages were fabricated in one layer. they were printed with the dimatix dmp3000 printer using 10 pl nozzle volume cartridge. printing was performed in a horizontal configuration instead of a vertical one. as printing head move along horizontal axis, ink drops onto substrate moving along the same axis, which leads to better printing results. similar printing solution is presented in [10]. samples were printed in 1016 dpi resolution, on 50 µm thick polyimide substrate, apical gts av [11]. key properties of this substrate are shown in table 1. inkjet printed resistive strain gages on flexible substrates 91 the third series of strain gages were fabricated in one and two layer using epson stylus c88+ desktop printer with 180 nozzles and ink droplet size small as 3 pl. gages were printed in 2000 dpi resolution on 140 µm thick pet-based substrate (novacentrix novele™ ij-220) [12]. these series of strain gages present an example of low-cost sensor manufacturing process using low-cost equipment. short developing time is additional advantage. pet-based substrate properties are shown in table 2. table 1. specifications of apical 200 av polyimide substrate. property value nominal thickness (µm) 50.8 tensile modulus (gpa) 2.8 tensile strength (mpa) 293 elongation (%) 104 coefficient of thermal expansion (ppm/ºc) 32 yield (m 2 /kg) 55 table 2. specifications of novele™ ij-220 pet-based substrate. property value basis weight (g/m 2 ) 175±10 caliper (µm) 140±12 smoothness bekk (sec.) >1000 stiffness (mn·m) 0.5±0.3 the first series of tested strain gages were printed in previously mentioned resolution, which corresponds to 25 μm drop spacing, and showed to be an optimal solution in terms of avoiding ink spillage and achieving uniform structures. amplitude of the driving waveform was 23 v and the frequency was 2 khz. the ink u5603 was made of silver nanoparticles (with 20 % wt of silver) and capped with a polymer coating that keeps the particles in a colloidal suspension, by sun chemical corporation [13]. in the manufacturers’ technical specifications, it is stated that the ink has a specific resistivity in the range of 530 μωcm. to avoid rapid evaporation of the printed structures during sintering, they were firstly left to dry for 30 minutes at room temperature. after the printing process was finished, the samples were put in an oven and sintered for 45 minutes at 240°c. the second series of tested strain gages were printed with water-based silver nanoparticle ink js-b25hv, produced by novacentrix with 25 % wt of silver [14]. this is an electrically conductive ink, with 2.8 µωcm film resistivity, designed to produce circuits on porous and non-porous substrates including inkjet papers, pet, polyimide, and glass. js-b25hv ink is specially formulated for compatibility and stability with dimatix print heads. drop spacing was kept the same (25 μm), but the amplitude of driving waveform was 30 v and the printing frequency was 1 khz. the samples were sintered for 30 minutes on 270°c, as recommended by the manufacturer. the third series of strain gages were printed with water-based silver nanoparticle ink js-b15p, produced by novacentrix with 15 % wt of silver [14]. ink has 4.5 µωcm film resistivity, and it is designed to produce circuits on porous substrates such as paper and novele™ (a coated pet). samples printed in one layer were sintered for 30 minutes on 92 ĉ. žlebiĉ, a. menićanin, n. blaž, lj. živanov, m. damnjanović 100°c, while the samples printed in two layers were printed for 60 minutes also on 100°c. detailed physical properties of used inks are shown in table 3. design of printed strain gages in this paper is improved compared to the design presented in our previous research [15], by increasing the length of the end loop. proposed length of strain gage end loop is five times longer than grid track width. since the creep behavior depends on parameters such as gage material, adhesive thickness, cantilever material and design of strain gage, it is necessary to make additional measurements for our inkjet fabricated gages to determine which ratio of end loop length and track width is the most appropriate, so the creep behavior been reduced to a minimum. the contact pads design are also changed and placed inside the overall sensor area (fig. 1). they have a taper section to adjust slowly the current density distribution. a photograph of sensor was taken with the 3.0 megapixels moticam 2300 camera on a wafer probe station. geometrical parameters of the strain sensors are presented in table 4. table 3 typical physical properties of silver inks [13], [14]. table 4 geometrical parameters of the strain gages. dimensions end track width 0.677 mm end loop width 0.979 mm track width 0.205 mm track spacing 0.217 mm track length 9.574 mm number of turns n=8 fig. 1 representative sample of strain gages with geometrical dimensions 3. measuring principle the terms stress and strain  (1 μ = 10 –6 m/m) are used to describe deformations of solid materials. when the strain is not too large, most of the solid materials behave like ink u5603 ink js-b25hv ink js-b15p silver content (wt %) 20 25 15 resistivity (μωcm) 5-30 2.8 4.5 viscosity (cp) 10-13 8 4 surface tension (dynes/cm) 27-31 30-32 30 inkjet printed resistive strain gages on flexible substrates 93 linear springs, and the displacement is proportional to the applied force. if the same force is applied to a thicker peace of solid material, the spring is stiffer and the displacement is smaller. this leads to a relation between force and displacement that depends on the dimensions of the material [16]. the resistive strain gage is a physically simple device, which can be easily applied in a straightforward manner for elementary measurements of surface strains [17]. these devices provide a suitable way to test new materials for their strain sensitivity by bonding the gages to a beam with a known strain behavior. the strain of the beam increases with the distance from the point of the applied force. maximal deflection δmax for elastic deformations of the used steel beam 67sicr5 [18] is approximately 50 mm (which is greater than the maximal deflection of 15 mm applied in this research). tested strain gages were mounted close to the fixed end, where the strain  has the greatest value and equals to: 3 6 ( ) , 4 beam beam l z h l         (1) where  is the deflection, h is the cantilever thickness, z is the distance from the fixed end of the cantilever to the middle of the strain gage, and lbeam is the length of the cantilever, as shown in fig. 2. deflection was controlled with screw mechanism at the free end of the cantilever, where two turns bend the cantilever for exactly 1 mm. deflection is measured with digital sliding caliper kern ip54. the relative resistance change is equal to: ,/ εgfr r  (2) where gf is the gauge factor of the material and r is the initial resistance of gage. the gages were bonded on the top side of the steel beam, for measuring tensile strain (denoted with “1”), and on bottom side of the steel beam, for measuring compressive strain, denoted with “2”, by two-component epoxy adhesive (fig. 2). in order to quickly and simply test strain gage, source meter keithley 2410 was used for measurement and as a current source (with excitation current of 1 ma). control software tool “ksm 2410 rc” was developed for acquisition of measured data. it was written using national instruments labview software. the measuring principle is shown in fig. 3. f δ h lbeamz 1 2 fig. 2 gages placement for measuring tensile (gage denoted with “1”) and compressive (gage denoted with “2”) strain. 94 ĉ. žlebiĉ, a. menićanin, n. blaž, lj. živanov, m. damnjanović source meter s e ri a l c o m m u n ic a ti o n data acquisition (r s -2 3 2 ) fig. 3 principle of data acquisition using keithley source meter 2410 and control software tool. in our previous work [8], we have presented a bridge as an alternative for measuring small resistance changes accurately. the sensor placement, as shown in fig. 5, enables the best response when the load is applied and its temperature compensation [19]. the testing gages were connected in a full-bridge wheatstone circuit, where the differential output voltage can be approximated as setout irεgf v  , (3) where iset is the set excitation current and r is the initial resistance, ideally the same for all the resistors. since the output of the full wheatstone bridge is a differential voltage, an instrumentation amplifier is used. for a low noise signal acquisition, it was used ina122pa instrumentation amplifier due to its high amplification and low offset voltage [20]. to suppress the supply ripple and high frequency interference, it was used low-pass active filters made with lm224 quad operational amplifier, as shown in fig. 6. f δ h lbeamz 1 2 3 4 fig. 5 cantilever with four placed strain gages (1, 2, 3 and 4) connected in a full-bridge wheatstone circuit. inkjet printed resistive strain gages on flexible substrates 95 fig. 6 block diagram of the developed signal conditioning circuit. 4. results and discussion measurements were performed on twelve gage samples. presented results of gf are average values of the tested strain gages. shown microstrain ranges represent ranges where the gages have approximately linear characteristic. 4.1. first series of printed strain gages (ink u5603, polyimide substrate, dimatix printer) measured r/r resistance values of first series of printed strain gages are obtained using keithley source meter controlled by developed software tool, are shown in fig. 7. average resistance of tested strain gages was 140 ω. as it can be seen, average gf, when the beam is loaded, is 1.07. when the beam is unloaded, average gf = 1.03. results are in accordance with our previous measurements presented in [5], where the measurements were performed with wheatstone bridge (gf was 1.09 when the beam was loaded, and when the beam was unloaded, gf was 1.01). in [10], sunchemical ink was also used for sensor fabrication, and obtained gf was around 0.35. fig. 7 relative resistance change δr/r as a function of the applied microstrain for first series of printed strain gages for the loading (black line) and unloading (red line) of the beam. 96 ĉ. žlebiĉ, a. menićanin, n. blaž, lj. živanov, m. damnjanović 4.2. second series of printed strain gages (ink js-b25hv, polyimide substrate, dimatix printer) the measurement results of tensile (positive) strain for second series of tested strain gages when the beam is loaded and unloaded are shown in fig. 8. the measurement results show that when the beam is loaded, average gf is 2.03, and when the beam is unloaded, average gf is 1.96. as it can be seen, there is a significant increase of gauge factor as compared to the first series of tested strain gages, with a presence of small values of hysteresis. possible reason for that is because the ratio of strain induced changes in atomic structure of silver nanoparticles ink js-b25hv to the strain producing them is better than it is for the first ink. average resistance value of tested sensors was 142 ω. in order to investigate compressive (negative) strain, measuring cables were connected to the cu wires of gage, which was bonded at the bottom side of steel beam. steel beam was upturned so that the compressive strain was measured also with the upper gage. as it can be seen in fig. 9, average gauge factor is lower than when measuring tensile strain, and it is gf=1.59. tested gages have linear characteristics up to approximately 1400 microstrains. fig. 9 relative resistance change δr/r as a function of the applied microstrain for compressive strain for second series of tested strain gages. in fig. 10, it is presented a comparison between stability of the response of one representative sample strain gage (from second series of tested gages) and commercial sensor fig. 8 relative resistance change δr/r as a function of the applied microstrain for second series of printed strain gages for the loading (red line) and unloading (black line) of the beam. inkjet printed resistive strain gages on flexible substrates 97 cea-06-125un-350 produced by micro-measurements (vishay precision group) [21] under constant deflection of the beam for 30 minutes. measurements were performed for four deflection steps (0 mm, 5 mm, 10 mm and 15 mm). as expected, the lowest ripple of strain sensors has been recorded for deflection of 0 mm. as it can be seen in fig. 10, commercial strain sensor has better resistance stability under different beam deflection, because commercial sensors have excellent encapsulation and sensitive grid is made of constantan. fig. 10 time response of one sample strain gage from second series of tested gages (denoted r sensor) and commercial sensor cea-06-125un-350 by micro-measurements (denoted r commercial) under constant deflection of the steel beam. 4.3. third series of printed strain gages (ink js-b15p, pet-based substrate, epson printer) in fig. 11, it is shown sensitivity of gages fabricated in one layer, on pet-based substrate with epson stylus c88+ printer using js-b15p nanoparticle silver ink. the average electrical resistance of tested strain gages was 104 ω. gf is slightly higher when beam is loading (~1.94) than for unloading the beam (~1.85). it is expected that, in cycling between a loaded and unloaded condition, there is a some degree of hysteresis. fig. 11 relative resistance change δr/r as a function of the applied mechanical deformation for third series of tested strain gages (one printed layer). 98 ĉ. žlebiĉ, a. menićanin, n. blaž, lj. živanov, m. damnjanović in [4], the realization process uses the epson desktop printer, “metalon js-b15p” ink and pet substrate as printing base. sensors have estimated gf of 1.6 for one printing layer, which is smaller than gf obtained with strain gages shown in this work. fig. 12 relative resistance change δr/r as a function of the applied mechanical deformation for third series of tested strain gages (two printed layers). the strain gage printed in two layers has smaller gf than gage printed in one layer, but hysteresis is manifestly smaller. measured gf is approximately equal for tensile and compressive strain (~1.58). average strain gages resistance printed on pet-based substrate in one layer was 104 ω, while for two layers strain gages was 61 ω. fig. 13 time response under constant deflection of the steel beam for one printed layer (r1 layer) and two printed layers (r2 layers) strain gages. as it can be seen in fig. 13, strain gages printed with epson printer on pet-based substrate are not stable as strain gages fabricated in combination with dimatix printer on polyimide substrate. stability measurements were performed for 15 minutes, since after that time readings of gages became unstable. it means that strain gage starts to display resistance inkjet printed resistive strain gages on flexible substrates 99 values which corresponds to higher beam strains. strain gage with two printed layers are more stable than gage with one layer, due to thicker and more uniform lines structure. beside presented measurements, it was also measured resistance change of printed gages in two month interval in laboratory conditions. it is observed that, at 25-26°c and 55 % of relative humidity, after one month, sensor resistance values decrease from its initial value for 1-1.5 %, after two months, for 2-2.5 % and after three months for 10 %. future improvements of the presented resistive strain sensor will be focused on encapsulation and investigation of possible wireless applications with the lc circuit. 5. conclusion substrate material choice playing important role in the fabrication of strain gages, since the strain of measuring object is transmitting through the substrate. strain gages were developed on polyimide and pet-based substrates. strain gages mounted on the surface of a metallic test specimen respond only to the strains that occur at the surface of the test specimen. as such, the results from strain gauge measurements must be analyzed to determine the state of stress occurring at the strain gauge locations. gf of resistive strain gages printed with three different silver nanoparticle inks onto polyimide and pet-based substrate have been successfully measured and compared. based on measured results for strain sensitivity, the second series of tested resistive strain gages have the highest strain sensitivity, with average gf~2.03, while the corresponding value of gf for the first series was around 1.07, and for the third series of strain gages gf~1.94 (for one layer) and gf~1.58 (for two layers). the first series of tested gages (printed with ink u5603 based on concentrated dispersion of silver nanoparticles in organic solvent ethanol-ethylene glycol mixture, on polyimide substrate with dimatix printer) have smaller gf than the commercial strain gages, probably because of that the silver nanoparticles exhibit some negative piezoresistive behavior, which is damping the positive resistance change. the second series of tested gages (printed with water-based ink js-b25hv on polyimide substrate with dimatix printer) have much better strain sensitivity, but their stability of the resistance response under constant deflection of the steel beam isn’t good as commercial sensors, as it is shown. the third series of tested gages (printed with water-based ink js-b15p on pet-based substrate with epson desktop printer) also have higher gf than the first series of tested gages. the most linear strain sensitivity function is achieved for two printed layers on pet-based substrate. results of this research indicate the strain gages with good gf can be produced even with low-cost equipment, such as desktop printer epson c88+, and pet-based substrate. also, it can be concluded that inkjet printing technology (with various inks, substrates and printers) is suitable for prototyping and development of strain and force sensors, and could be expanded for other sensor types through development of new nanoparticle inks, geometrical printing design and encapsulation of fabricated sensors. acknowledgement: this research was supported by the ministry of education, science and technological development, republic of serbia, project number tr-32016. 100 ĉ. žlebiĉ, a. menićanin, n. blaž, lj. živanov, m. damnjanović references [1] d. lichtenwalner, a. hydrick, a. kingon, "flexible thin film temperature and strain sensor array utilizing a novel sensing concept." sensors and actuators a: physical, vol. 135, no. 2, pp. 593-597, 2007. [2] d. zhao, t. liu, m. zhang, r. liang, b. wang, “fabrication and characterization of aerosol-jet printed strain sensors for multifunctional composite structures”, smart materials and structures, vol. 21, no. 11, pp. 115008, 2012. [3] c. cochrane, v. koncar, m. lewandowski, c. dufour, "design and development of a flexible strain sensor for textile structures based on a conductive polymer composite." sensors vol. 7, no. 4, pp. 473492, april 2007. [4] b. ando, s. baglio, “all-inkjet printed strain sensors”, ieee sensors journal, vol. 13, pp. 4874-4879, december 2013. [5] c. zlebic, n. ivanisevic, m. kisic, n. blaz, a. menicanin, lj. zivanov, m. damnjanovic, “comparison of resistive and capacitive strain gauge sensors printed on polyimide substrate using ink-jet printing technology”, proc. of 29th ieee international conference-miel, belgrade, serbia, 2014, pp. 141-144. [6] v. osch, t. hj, j. perelaer, a. de laat, u. schubert, “inkjet printing of narrow conductive tracks on untreated polymeric substrates”, adv. mater., vol. 20, pp. 343-345, january 2008. [7] k. j. lee, b. h. jun, t. h. kim, j. joung, “direct synthesis and inkjetting of silver nanocrystals toward printed electronics”, nanotechnology, vol. 17, no. 9, pp. 2424-2428, april 2006. [8] d. kim, s. jeong, b. k. park and j. moon, “direct writing of silver conductive patterns: improvement of film morphology and conductance by controlling solvent compositions”, appl. phys. lett., vol. 89, pp. 264101-264101-3, december 2006. [9] m. maiwald, c. werner, v. zöllmer, m. busse, “inktelligent printing< up>® for sensorial applications”, sensor review, vol. 30, pp. 19-23, 2010. [10] v. correia, c. caparros, c. casellas, l. francesch, j. rocha, s. lanceros-mendez. "development of inkjet printed strain sensors." smart materials and structures, vol. 22, no. 10, pp. 105028, 2013. [11] gts flexible materials, [online]: http://www.gts-flexible.com/about-gts/apical/ [12] novacentrix novele ij-220, [online]: http://store.novacentrix.com/novele_ij_220_p/910-0070-02.htm [13] sun chemical, [online] available: http://www.sunchemical.com [14] novacentrix, [online] available: http://www.novacentrix.com/products/metalon-inks/silver [15] c. zlebic, m. kisic, n. blaz, a. menicanin, s. kojic, lj. zivanov, m. damnjanovic, “ink-jet printed strain sensor on polyimide substrate”, 36th international spring seminar on electronics technology, alba iulia, romania, 2013, pp. 409-414. [16] webster j. g., the measurement, instrumentation, and sensors: handbook, crc press, 1999, chapter 22, pp. 571-589. [17] hannah r. l., reed s. e., strain gage user’s handbook, springer, cambridge university press, 1992, chapter 1, pp. 1-79. [18] matbase, [online] available: http://www.matbase.com/ [19] r. s. figliola, d. e. beasley, theory and design for mechanical measurements, john wiley and sons; 5th edition, 2010, chapter 11, pp. 466-503. [20] burr-brown corp., “single supply instrumentation amplifier ina122”, 1997, [online] available: http://www.datasheetcatalog.org . [21] micro-measurements (vishay precision group), [online] available: http://www.vishaypg.com/docs/11224/125un.pdf. http://www.novacentrix.com/products/metalon-inks/silver http://www.matbase.com/ http://www.datasheetcatalog.org/ http://www.vishaypg.com/docs/11224/125un.pdf 11672 facta universitatis series: electronics and energetics vol. 36, no 4, december 2023, pp. 509 518 https://doi.org/10.2298/fuee2304509s © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper compact dual-band circularly polarized antenna for wireless communications karunesh srivastava1, mayuri kulshreshtha2 1department of electronics & communication engineering ajay kumar garg engineering college ghaziabad (u.p.), india 2department of computer science & engineering, ims engineering college ghaziabad (u.p.), india abstract. p-shaped dual-band circularly polarized (cp) antenna for wireless communications with right-hand circular polarization (rhcp) and left-hand circular polarization (lhcp) is presented in this article. optimized electrical volume of the proposed structure is 0.46λ 0 × 0.46λ 0 × 0.02λ 0 mm3 at 4.4 ghz resonant frequency. the measured 10 db impedance bandwidths are 50.7% and 5.7% for (3.37-5.60 ghz) and (10.82-11.46 ghz) resonating bands at frequencies 4.4 ghz and 11.4 ghz respectively. the measured 3 db impedance axial-ratio bandwidths for (4.65-5.13 ghz) and (11.21-11.52 ghz) bands are 9.7% and 2.7%. agreement of simulation results with measured results ensure the excellent circular polarization at frequencies 4.96 ghz and 11.4 ghz. key words: antenna, circularly polarized, c-band, x-band, aeronautical mobile, satellite communication. 1. introduction multipath interferences and polarization losses are two main reasons for reduction of effect of linearly polarized (lp) antennas [1-3]. circularly polarized (cp) antennas can receive all polarizations with outstanding feature of fairly constant signal strength, therefore circularly polarized antennas are used for reducing these losses. to design a circularly polarized antenna as compare to linearly polarized antenna is challenge in itself. in simulation environment, axial ratio is one of the important characteristics of circularly polarized antenna. shape of the radiator, ground and feeding techniques play major role in achieving excellent axial ratio. demand of compact dual/multiband cp antennas has increased manifolds. numerous dual/multiband lp/cp antennas have been reported in [4-15] for different applications. single and dual band circularly polarized antennas for various applications are reported. tuned strip antenna with f-shaped ground [11], u-shaped patch antenna [12], cpw fed received march 23, 2023; revised may 01, 2023; accepted june 03, 2023 corresponding author: karunesh srivastava ajay kumar garg engineering college ghaziabad (u.p.), india e-mail: karunesh.ec@gmail.com 510 k. srivastava, m. kulshreshtha fork-shaped antenna [13], loaded square slot antenna with split ring resonators [14] have been reported to achieve dual-band circular polarization. numerous circularly polarized dual band antennas are encountered in reported literatures which are useful for different applications [16-17] as well as for cand xband applications [18-20]. a new design (evolution of [15]) of dual band circularly polarized antenna for c and x-band applications is proposed in this article. geometrical structure of the proposed design with physical dimensions is shown in fig. 1. frequency 4.4 ghz is chosen for calculating the electric size and for optimization of the proposed structure because maximum return loss (-35 db) is observed in the simulation environment. p-shaped radiating patch with defected ground (incorporation of square track, square slot, slit and perturbation stub) is intuitively conceived from the literature and different techniques are used to obtain the optimized results. ansys hfss version 13 is used for design and optimization purpose. measurement is done for validating the simulation results. the proposed antenna is printed on the fr4-epoxy dielectric substrate having thickness h = 1.6 mm, dielectric constant ɛ = 4.4 and loss of tangent tan δ = 0.02. micro-strip feed line (λ0/4 mm) with 50 ω characteristics impedance is used for excitation of proposed antenna. fig. 1 geometrical top (green color) and bottom (red color) view of the proposed structure to better understand the behavior of the proposed design, stepwise growth of the proposed design in five different steps are displayed in terms of reflection coefficient, gain and axial ratio (fig. 3). the antenna design-a5 is best suited on the basis of the simulated results for c and xband applications. the geometrical structure with physical dimensions and fabricated photograph of the proposed antenna (a5) are shown in fig. 1 and fig. 2(a)-(b) respectively. various antenna parameters such as reflection coefficient, gain, axial ratio, current distribution and radiation pattern have been analyzed in simulation environment. compact dual-band circularly polarized antenna for wireless communications 511 (a) (b) fig. 2 top (a) and bottom (b) view of the fabricated antenna 2. evolution of antenna design the evolution/stepwise growth (table 1) of the proposed design is self explainatory. defects created on the ground have been parametrically analyzed to get the optimized dimensions of the antenna and antenna parameters. effect of square track (2 mm thick), inner square slot (16 mm×16 mm), slit (1 mm×24 mm) and perturbation (3 mm×8 mm) created on the ground from antenna a1-a5 is observed in simulation environment. it is clear from fig. 3(a-c) that antenna a1 exhibits resonating band (10.4-10.6 ghz) with maximum gain of 4.57 dbi and without usable axial ratio band. increment in resonating bands are observed by creating square track/defect on the ground of antenna a1 (results antenna a2). antenna a2 does not carry sufficient gain within the bands. change in inductive and capacitive effect of input impedance created by square track/defect is the main reason of change in return loss, axial ratio and gain. electromagnetic coupling may also be the reason of change in antenna parameters. further square slot (16 mm×16 mm) is etched from ground of antenna a2 to obtain antenna a3 for improving the gain within the resonating and axial ratio band. antenna a4 is obtained by introducing the slit (1 mm×24 mm) in antenna a3 which creates the electromagnetic coupling gap in the inner ground. finally, antenna a5 (proposed antenna) is obtained by adding the perturbation in lower left corner of antenna a4. addition of perturbation alters the electric conduct of the ground which results in increment of resonating bands at higher frequency side. resonating bands, axial ratio bands and gain of antennas a1-a5 are investigated (fig. 3(a-c)) and tabulated in table 1. it is clear from the table 1 that antenna a5– proposed structure is resonating with five resonating bands but axial ratio bands (4.65-5.16 ghz) and (11.19-11.52 ghz) lie only in two resonating bands (3.37-5.60 ghz) and (10.8211.46 ghz) with sufficient positive gain. therefore, the proposed design (a5) is well suited for cand xband applications. 512 k. srivastava, m. kulshreshtha table 1 stepwise growth and performance of proposed antenna antenna shape (name) resonating bands (ghz) gain (dbi)/ frequency(ghz) axial ratio bands (ghz) (a1) (10.4-10.6) 4.57/10.48 no usable band (a2) (6.33-6.46) (9.38-9.72) (11.36-11.81) (12.77-13.42) -1.7/6.46 5.59/9.68 -4.58/11.60 5.69/13.41 (9.43-9.72) (12.14-12.17) (a3) (6.52-7.55) 3.09/6.58 (3.34-3.48) (a4) (3.51-5.29) (6.8-7.78) 3.73/5.18 2.50/6.86 no usable band (a5-proposed antenna) (3.37-5.60) (6.89-7.69) (9.62-9.81) (10.82-11.46) (13.36-13.58) 3.97/5.38 0.25/6.89 -0.62/9.62 0.96/11.16 1.46/13.58 (4.65-5.16) (11.19-11.52) 3. results and discussion the proposed design is imprinted on fr4 substrate (fig. 2) and measurement is done for verification of simulation results. anritsu vector network analyzer ms2038c is used to measure the reflection coeffficient (|s11|) and measurement setup used for measuremnet of gain, axial ratio and radiation pattern of the proposed design is shown in fig. 6. simulated and measured reflection coefficient and axial ratio of the proposed design is shown in fig. 4(a). compact dual-band circularly polarized antenna for wireless communications 513 (a) (b) (c) fig. 3 top parametric analysis of antenna (a1-a5) in terms of simulated (a) return loss; (b) gain; (c) axial ratio maximum measured return loss for resonating bands (3.37-5.60 ghz) and (10.8211.46 ghz) is -35 db and -18 db respectively (fig. 4(a, b)). measured peak gain for each resonating band is 3.97 dbi and 0.96 dbi respectively (fig. 4(b, c)). simulated (measured) impedance axial ratio bandwidth (fig. 4(a,b)) of the proposed design with in axial ratio band is 10.4% (9.7%) and 2.9% (2.7%). simulated and measured radiation pattern for principle planes (x-z and y-z planes) at frequencies 4.85 ghz and 11.4 ghz are displayed in fig. 5. bidirectional radiation pattern with right hand circular polarization (rhcp) in +z direction and left hand circular polarization (lhcp) in -z direction is observed from fig. 7. radiation patterns are little bit distorted from principle axis which may be due to asymmetry in the proposed structure with respect to y–axis. it is clear from fig. 5 that the difference (for both simulated and measured) between rhcp and lhcp component is more than 10 db for both frequencies and planes. 514 k. srivastava, m. kulshreshtha simulated surface current distributions at frequencies 4.96 ghz and 11.4 ghz shown in fig. 7 validate the circular polarization of the proposed design. surface current distributions are simulated using hfss version 13 from 0° to 270° with advancement of 90°. it is observed from fig. 7 that the direction of surface current reverses when phase changes from 0° to 180° and 90° to 270° respectively. it can also be seen from fig. 7 that x and y magnitude are almost equal with phase difference of 90° in radiating patch which satisfies the necessary condition for generation of circularly polarized waves. it is confirmed from fig. 7 that current is rotating in anticlockwise direction and clockwise direction with respect to +z direction at frequencies 4.96 ghz and 11.4 ghz respectively which confirms the rhcp and lhcp waves at frequencies 4.96 ghz and 11.4 ghz respectively. (a) (b) (c) fig. 4 simulated and measured result of proposed antenna in terms of (a) return loss and axial ratio; (b) return loss and gain; (c) axial ratio and gain a comparison of previously reported circularly polarized dual band antennas is established in table 2 in terms of material/substrate, resonating bands, impedance bandwidth, ar bands, impedance arbw, peak gain and applications. it can be observed from table 2 that dielectric resonator [16-18] and fr4 substrate [19-20] are used for getting dual band circularly polarized compact dual-band circularly polarized antenna for wireless communications 515 antenna for different applications. the reported literatures in table 2 cover either wlan/wimax or c-and x-band applications. it is clearly depicted in table 2 that the proposed antenna along with [18-20] offers two circularly polarized band for c& x-band applications. proposed antenna also offers smallest area (32×32 mm2) except [19] (20×20 mm2). it is observed that antenna which covers full downlink frequency (3.74-4.2 ghz) and x-band has not been encountered in table 2 except [18]. so the proposed design is novel in the sense that it covers cand x –band with sufficient gain, impedance bandwidth and smallest area which is useful for aeronautical mobile, fixed land mobile broad casting and fixed mobile and satellite communication. (a) (b) (c) (d) fig. 5 radiation pattern of the proposed cp antenna in the x-z plane at (a) 4.96 ghz; (b) 11.4 ghz and in the y-z plane at (c) 4.96 ghz (d) 11.4 ghz 516 k. srivastava, m. kulshreshtha table 2 comparison of proposed antenna with other circularly polarized antennas ref. material/ substrate resonating bands (ghz) ibw (%) ar bands (ghz) impedance arbw (%) peak gain (dbi) applicatio ns [16] ring dielectric resonator (2.88–3.72) (5.4-5.95) 25.4 9.6 (3.0–3.4) (5.64-5.98) 9.52 5.85 6 wlan and wimax [17] cylindrical dielectric resonator (2.4-2.90) (4.95.98) 18.04 19.85 (2.55-2.72) (4.9-5.68) 6.45 14.74 7 wlan and wimax [18] hybrid ring cylindrical dielectric resonator (3.4-4.18) (7.259.74) 20.58 29.31 (3.92-4.08) (8.85-9.61) 4 8.23 5.8 8.2 c and x band [19] fr4 (4.94-9.42) 62.39 (5.94-6.69) (7.77-8.86) 11.75 13.12 4.8 c and x band [20] fr4 (4.48-10.12) 80.53 (6.89-6.99) (7.84-8.03) (8.83-8.98) 1.37 2.35 1.67 5.9 c and x band [*] fr4 (3.37-5.60) (10.82-11.46) 50.7 5.7 (4.65-5.13) (11.21-11.52) 9.7 2.7 3.9 0.9 c and x band [*]-proposed structure, ar-axial ratio, arbw-axial ratio band width, ibw-impedance band width fig. 6 measurement setup for gain, axial ratio and radiation pattern of the proposed antenna in anechoic chamber compact dual-band circularly polarized antenna for wireless communications 517 fig. 7 surface current distribution with 90° phase shifts for (a) 4.96 ghz; (b)11.4 ghz. 4. conclusions in this paper, the design of novel circularly polarized antenna for wireless applications is presented. defects (square track, square slot,slit and perturbation) in ground plane is responsible for circular polarization at lower (4.65-5.13 ghz) as well as higher (11.2111.52 ghz) frequency bands. rhcp and lhcp waves are offered within 3 db axial ratio bands with measured axial ratio impedance bandwidth of 9.7% and 2.7% at frequencies 4.96 ghz and 11.38 ghz respectively. compactness and mentioned characteristics of the antenna makes it suitable for aeronautical mobile, fixed land mobile broad casting, and fixed mobile except aeronautical mobile. references [1] a. ghorbani, m. ansarizadeh and r. a. abd-alhameed, "bandwidth limitations on linearly polarized micro-strip antennas", ieee trans. antennas propag., vol. 58, no. 2, pp. 250-257, 2010. [2] c. a. balanis, antenna theory analysis and design, 3rd edition. new york, ny: wiley-inter science, 2005. [3] c. c. counselman, "multipath-rejecting gps antennas", proceedings of the ieee, vol. 87, no. 1, pp. 86-91, 1999. [4] k. srivastava, s. singh, a. singh and r. singh, "dual band integrated wideband multi resonating patch antenna for c-band and ku-band applications, int. j. electron. telecommun., vol. 65, pp. 347-352, 2019. [5] m. sano and m. higaki, "a linearly polarized patch antenna with a continuously reconfigurable polarization plane", ieee trans. antennas propag., vol. 67, no. 8, pp. 5678-5683, 2019. [6] k. srivastava, a. k. pandey, s. singh, a. pandey and r. singh, "defected circular slot dual band antenna for s, c and x-band applications", lect. notes electr. eng., vol. 711, pp. 803-811, 2021. [7] k. srivastava, s. singh, a. singh and r. singh, "meandered quad band antenna in rectangular slot for l/s/c/x-band applications", adv. intell. syst. comput., vol. 1340, pp. 487-495, 2021. 518 k. srivastava, m. kulshreshtha [8] v. v. reddy and n. v. s. n. sharma, "triband circularly polarized koch fractal boundary micro-strip antenna", ieee antennas wirel. propag. lett., vol. 13, pp. 1057-1060, 2014. [9] m. sano and m. higaki, "a linearly polarized patch antenna with a continuously reconfigurable polarization plane", ieee trans. antennas propag., vol. 67, no. 8, pp. 5678-5683, 2019. [10] r. k. maurya, b. k. kanaujia, a. k. gautam, s. chatterji and a. k. singh, "circularly polarized hexagonal ring micro-strip patch antenna with asymmetrical feed and dgs", microw. opt. technol. lett., vol. 62, no. 4, pp. 1702-1708, 2020. [11] x. ding, z. zhao, l. zhou, m. s. ellis, z-p. nie, "dual-band dual sense unidirectional circularly polarized antenna with cpw-fed for wireless applications", prog. electromagn. res. c, vol. 55, pp. 167-177, 2014. [12] w-m. li, b. liu, h-w. zhao, "the u-shaped structure in dual-band circularly polarized slot antenna design", ieee antennas wirel. propag. lett., vol. 13, pp. 447-450, 2014. [13] c.-j. wang and y.-w. cheng, "a cpw-fed micro-strip fork-shaped antenna with dual-band circular polarization". prog. electromagn. res. c, vol. 66, pp. 173-182, 2016. [14] k. kandasamy, b. majumder, j. mukherjee and k. p. ray, "dual-band circularly polarized split ring resonators loaded square slot antenna", ieee trans. antennas propag., vol. 64, no. 8, pp. 3640-3645, 2016. [15] k. srivastava, b. mishra and r. singh, "stub-matched inverted l-shape circularly polarized antenna for cband applications", int. j. microw. wirel. technol., vol. 14, no. 4, pp. 502-510, 2022. [16] d. pathak, s. k. sharma and v. s. kushwah, "dual-band circularly polarized dielectric resonator antenna for wireless applications", int. j. rf and microw. comput. aided eng., vol. 28, no. 5, pp. 212-221, 2018. [17] a. sharma, g. das and r. k. gangwar, "dual-band circularly polarized modified circular aperture loaded cylindrical dielectric resonator antenna for wireless applications", microw. opt. technol. lett., vol. 59, no. 10, pp. 2450-2457, 2017. [18] c. rai, s. singh, a. k singh and r. k. verma, "design and analysis of dual-band circularly polarized hybrid ring cylindrical dielectric resonator antenna for wireless applications in c and x-band", wirel. pers. commun., vol. 126, no. 2, pp. 1383-1401, 2022. [19] r. dhara and t. kundu, "compact dual-band circularly polarized inverted y-shaped printed monopole antenna with edge ground", radioelectron. commun. syst., vol. 64, no. 3, pp. 125-139, 2021. [20] r. dhara, s. k. jana, m. mitra, "tri-band circularly polarized monopole antenna for wireless communication application", radioelectron. commun. syst., vol. 63, no. 4, pp. 248-260, 2020. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 641-650 https://doi.org/10.2298/fuee1804641n design of planar plate monopole antenna with vertical rectangular cross-sectional plates for ultra-wideband communications  seyed arash naghdehforushha 1 , mahdi bahaghighat 2 *, mohammad reza salehifar 2 , hossein kazemi 3 1 electrical engineering department, amirkabir university of technology (aut), tehran, iran 2 engineering department, raja university of qazvin, qazvin, iran 3 school of engineering, the university of edinburgh, edinburgh, uk abstract. in this paper, a novel design for planar plate monopole antennas is proposed with applications to ultra-wide band (uwb) communications. to verify the proposed antenna design, simulations are performed by means of cst and hfss software tools, showing that the impedance bandwidth is significantly increased by vertical cross-sections. by adding a series of parameters to the vertical crosssections, the antenna efficiency is effectively enhanced by achieving a return loss of 10 db over the bandwidth range between 3.1 ghz and 10.6 ghz. in addition, our experimental results demonstrate that the fabricated antenna has a return loss performance similar to that obtained by the simulation results. key words: monopole antenna with vertical cross plates, planar monopole antenna, ultra-wideband (uwb). 1. introduction during the recent years, broadband antennas covering a wide range of the frequency spectrum have found increasing applications. these antennas are particularly applied to high data rate wireless communications [1-4] with high quality of service requirements, such as multimedia transmission [5-7], real time navigation and tracking systems, photography and radars. the planar monopole antennas are well suited to broadband applications due to their wide impedance bandwidth, omnidirectional pattern with linear polarization, low cost and noncomplex shape. the rectangularity of such antennas is more appealing because of its simple structure and easier construction in contrast to the circular or elliptical antenna structure. there are several approaches for increasing the impedance bandwidth of received march 25, 2018; received in revised form august 31, 2018 corresponding author: mahdi bahaghighat engineering department, raja university of qazvin, qazvin, iran (e-mail: m.bahaghighat@aut.ac.ir) 642 s.a. naghdehforushha, m. bahaghighat, m.r. salehifar, h. kazemi rectangular plate-shaped monopole antennas including beveling and shorting techniques [814]. in this work, a novel structure is proposed based on adding vertical cross-linked plates to a simple rectangular monopole antenna, which leads to a remarkable improvement in the impedance bandwidth. for different cross-sections, some new parameters such as length, width and height of the cross-sectional plate are considered to provide proper adaptation for the impedance bandwidth. all the parameters are optimized to maximize the attainable performance. compared with a simple monopole antenna, the proposed antenna has smaller rectangular plates. this type of antennas exhibits wideband characteristics with a stable pattern over the entire operating bandwidth. a planar disc monopole antenna was developed and studied by honda et al. in 1991 for the japanese television band (90-770mhz) [6], where the antenna is mounted on a bounded circular ground plate. in this work, we use both cst and hfss software tools to simulate the proposed antenna. the proposed antenna is suitable for indoor radar applications. the comparison between proposed structure and the rectangular monopole antenna, proposed structure provides higher impedance bandwidth but patterns of the rectangular plate monopole are more stable with frequency [8]. (a) front view (b) top view fig. 1 a monopole antenna including vertical plates design of planar plate monopole antenna with vertical rectangular cross-sectional plates... 643 2. antenna design fig. 1 illustrates the schematic of the proposed monopole antenna with cross-sectional vertical plates from the top and front views. the rectangular antenna (l1 × w1) with cross plates (l2 × w2) is placed on the top of the circular ground plane with the radius r and is fed by an sma connector at a distance of g. in this figure, s is the gap between the cross-sections of the vertical plates. the central part of the bottom edge of the monopole antenna is connected to a pin, which is coming out of the ground plane through the hole. we consider this pin to facilitate connection with the feeding source. for the distance between the main monopole antenna and its side, the following formula is adopted in our design based on [8]. 61.9 ( ) 1 lf ghz w  (1) where w1 and fl are the side length in mm and the frequency corresponding to the lower edge of the bandwidth, respectively. in our work, the width of the monopole antenna is optimized in order to increase the impedance bandwidth. then, the monopole antenna is augmented by mounting the proposed vertical cross-sectional plates on the substrate. these plates provide new degrees of freedom for a more flexible adjustment of the impedance bandwidth so as to achieve the optimum performance without any reduction in the target 10 db return loss. 3. simulation and results the return loss of the antenna is simulated by the cst software tool. to this end, the antenna is excited via the waveguide port. the thickness of the monopole plate antenna is 0.5 mm filled with bronze and a thin layer of tin. the main dimensions of the antenna are set to l1 = 15 mm, w1 = 18 mm and four vertical cross-sections are considered to increase the impedance bandwidth of the main antenna. the 50 mm radius circular-shaped ground plate is also fed into the antenna above an sma connector. the pin is a wire with a diameter of 1.3 mm and a length of 2 mm. the gap between the antenna and the ground is considered to be 1.5 mm. this value is obtained through the analysis of the return loss by taking into account the effect of the dimensions of the rectangular plate monopole antenna and its distance from the ground plane on the impedance bandwidth. fig. 2 shows the return loss of a simple rectangular monopole antenna with different values for l1 and w1 and with a constant ground radius of 50 mm. it can be observed that the impedance bandwidth is bounded between 3.1 to 6.5 ghz. in the following, by fixing the main dimensions of the antenna at l1=15 mm and w1=18 mm, the design of the dimensions of the vertical cross-sectional rectangular plates is discussed using fig. 3. as shown in fig. 3 for different lengths and widths of the cross-vertical plates, the return loss is optimized to acquire the best impedance bandwidth. likewise, as shown in fig. 4, the antenna distance from the ground plane is optimized to minimize the return loss. the effect of choosing different values for the ground radius on the return loss is investigated in fig. 5. the results suggest that the optimum value aiming to achieve the wide bandwidth is around 50 mm. in this work, we choose the value of d to be equal to 5 mm, so that the vertical cross-sections are centered on the antenna width, see fig. 1. 644 s.a. naghdehforushha, m. bahaghighat, m.r. salehifar, h. kazemi in fig. 6, the current distribution is shown for both a simple monopole antenna and the one designed using the cst software tool. it can be seen that the current concentration for the simple monopole antenna is focused on the side near the edges of the antenna. therefore, the use of the vertical cross-sectional plates to some extent offloads the current near the edges toward the vertical plates, thus increasing the impedance bandwidth. the maximum achievable gain over the considered frequency range is computed by using the hfss software tool and the results are shown in fig. 7. the simulated and measured radiation pattern for a monopole antenna with vertical rectangular plates are shown in figs. 8 and 9. the omnidirectional pattern is shown in fig. 8(c). 3.1 4.5 6 7.5 9 10.6 -40 -30 -20 -10 0 frequency in ghz r et u rn l o ss ( d b ) l1=18 , w1=18 l1=15 , w1=20 l1=15 , w1=18 fig. 2 return loss of a simple monopole antenna with a length of l1 and different w2 width with a radius of 50 mm 3.1 4.5 6 7.5 9 10.6 -30 -20 -10 0 frequency in ghz r et u rn l o ss ( d b ) l2=8mm ,w2=10mm l2=8mm ,w2=8mm l2=7mm ,w2=10mm l2=7mm ,w2=8mm fig. 3 antenna return loss for different l2 and w2 with l1 = 15mm, w1 = 18mm, g = 1.5mm, s = 5mm, d = 5mm and r = 50mm design of planar plate monopole antenna with vertical rectangular cross-sectional plates... 645 3.1 4.5 6 7.5 9.5 10.6 -25 -20 -15 -10 -5 frequency in ghz r et u rn l o ss ( d b ) g=2.5 mm g=2 mm g=1.5 mm fig. 4 antenna return loss for different heights g with l1=15mm, w1 = 18mm, l2 = 7mm, w2 = 8mm, s = 5mm, d=5mm and r = 50mm. 3.1 4.5 6 7.5 9 10.6 -30 -20 -10 0 fequency in ghz r et u rn l o ss ( d b ) r=50 mm r=40 mm r=30 mm fig. 5 antenna return loss for different radius r of circular ground plane with l1 = 15mm, w1 = 18mm, l2 = 7mm, w2 = 8mm, s = 5mm, d = 5mm and g = 1.5mm 4. experimental results our antenna sample is implemented based on mentioned parameters in fig. 6. 646 s.a. naghdehforushha, m. bahaghighat, m.r. salehifar, h. kazemi simple monopole antenna with length l1 = 15mm and width w1 = 18mm with a radius of 50mm monopole antenna with rectangular crosssection plates with l1 = 15mm, w1 = 18mm, l2 = 7mm, w2 = 8mm, s = 5mm, d = 5mm and r = 50mm (a) (b) (c) fig. 6 comparison of current distribution (a/m) for three frequencies. (a) 4 ghz, (b) 7 ghz, and (c) 9.5 ghz design of planar plate monopole antenna with vertical rectangular cross-sectional plates... 647 4.5 6 7.5 9 10.6 3 4 5 6 frequency in ghz g ai n ( d b ) fig. 7 the vertical cross-sections monopole antenna gain with l1 = 15mm, w1 = 18mm, l2=7mm, w2 = 8mm, s = 5mm, d = 5mm, g = 1. 5mm and r = 50mm 0 20 40 60 80 100 120 140 160 180 -130 -110 -90 -70 -50 -30 -10 10 theta in degree d ir e c ti v it y ( d b ) phi=0 deg freq=4 ghz freq=7 ghz freq=9.5 ghz (a) 0 20 40 60 80 100 120 140 160 180 -130 -110 -90 -70 -50 -30 -10 10 theta in degree d ir e c ti v it y ( d b ) phi=90 deg freq=4 ghz freq=7 ghz freq=9.5 ghz (b) 0 50 100 150 200 250 300 360 -30 -20 -10 0 10 phi in degree d ir e c ti v it y ( d b ) theta=90 deg freq=4 ghz freq=7 ghz freq=9.5 ghz (c) fig. 8 radiation pattern of monopole antenna with vertical crossed plates for three different frequencies for three sections with l1=15mm, w1 = 18mm, l2 = 7mm, w2 = 8mm, s = 5mm, d=5mm, g = 1.5mm and r = 50mm. (a) phi = 0 °, (b) phi = 90 °, and (c) theta = 90 ° 648 s.a. naghdehforushha, m. bahaghighat, m.r. salehifar, h. kazemi (a) (b) fig. 9 measurement of co and cross-radiation patterns of proposed structure at 4 ghz (a) e-plane (xz-plane) and (b) h-plane (xy-plane. l1=15mm, w1 = 18mm, l2 = 7mm, w2 = 8mm, s = 5mm, d=5mm, g = 1.5mm and r = 50mm.( the prototype of the antenna fabricated in this work is shown in fig. 10. it is controlled by the sma connector on top of the ground. this monopole antenna is made of tin-plated bronze with a thickness of 0.5 mm. the length of the sma pin connector is 2 mm and the ground plane thickness is 0.5mm. fig. 10 the proposed antenna prototype for comparison, the results of the return loss simulated by the cst software and those measured by the network analyzer are shown in fig. 11. the discrepancy between the results are primarily because there is no loss in simulations, whereas in practice there are inevitable errors due to the non-ideal fabrication process and laboratory environment. design of planar plate monopole antenna with vertical rectangular cross-sectional plates... 649 3.1 4.5 6 7.5 9 10.6 -40 -30 -20 -10 0 frequency (ghz) r et u rn l o ss ( d b ) measured simulated fig. 11 comparison between the measured and simulated results of return loss for proposed monopole antenna with vertical rectangular plates 5. conclusion in this paper, a novel method is presented based on designing vertical rectangular cross-sections for a monopole antenna. it is further shown in [2] that the new design structure reaches the same property while reducing 2 protruding plates. the results of the return loss performance show that by adding a series of parameters introduced by the rectangular vertical cross-sections, a return loss of 10 db can be achieved over an ultrawide bandwidth. the main outcome of this research constitutes substantial enhancement of the bandwidth for the input impedance of the monopole antenna. references [1] a. jalali-deel, v. nayyeri, m. soleimani, and s.-a. naghdehforushha, "modified current distribution for analysis of spiral antennas," iet microwaves, antennas & propagation, vol. 11, pp. 1583-1586, 2017. [2] s. a. naghdehforushha, h. oraizi, f. hojjat-kashani, and a. j. deel, "design of a rectangular metallic monopole antenna with protruding normal plates for applications in uwb communication," progress in electromagnetics research, vol. 51, pp. 161-167, 2014. [3] s. a. naghdehforushha and g. moradi, "plasmonic patch antenna based on graphene with tunable terahertz band communications," optik-international journal for light and electron optics, 2017. [4] s. a. naghdehforushha and g. moradi, "design of plasmonic rectangular ribbon antenna based on graphene for terahertz band communication," iet microwaves, antennas & propagation, 2017. [5] m. bahaghighat and s. a. motamedi, "it-mac: enhanced mac layer for image transmission over cognitive radio sensor networks," international journal of computer science and information security, vol. 14, p. 234, 2016. [6] honda, satoshi, michiaki ito, hajime seki, and yosbio jinbo. "a disk monopole antenna with 1: 8 impedance bandwidth and omnidirectional radiation pattern." in proceedings of the international symposium on antennas and propagation japan, vol. 4, pp. 1145-1145. institute of electronics, information & communication engineers, 1992. [7] m. bahaghighat and s. a. motamedi, "vision inspection and monitoring of wind turbine farms in emerging smart grids," facta universitatis, series: electronics and energetics, vol. 31, pp. 287-301, 2018. 650 s.a. naghdehforushha, m. bahaghighat, m.r. salehifar, h. kazemi [8] m. ammann, "square planar monopole antenna," 1999. [9] e. antonino-daviu, m. cabedo-fabres, m. ferrando-bataller, and a. valero-nogueira, "wideband double-fed planar monopole antennas," electronics letters, vol. 39, p. 1635, 2003. [10] m. ammann, "control of the impedance bandwidth of wideband planar monopole antennas using a beveling technique," microwave and optical technology letters, vol. 30, pp. 229-232, 2001. [11] m. ammann and z. n. chen, "a wide-band shorted planar monopole with bevel," ieee transactions on antennas and propagation, vol. 51, pp. 901-903, 2003. [12] w.-s. lee, d.-z. kim, k.-j. kim, and j.-w. yu, "wideband planar monopole antennas with dual bandnotched characteristics," ieee transactions on microwave theory and techniques, vol. 54, pp. 28002806, 2006. [13] m. ammann and z. n. chen, "wideband monopole antennas for multi-band wireless systems," ieee antennas and propagation magazine, vol. 45, pp. 146-150, 2003. [14] h. hassani and s. mazinani, "wideband planar plate monopole antenna," in passive microwave components and antennas, ed: intech, 2010. instruction facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. 1-11 https://doi.org/10.2298/fuee2201001t © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper influence of oxide thickness variation on analog and rf performances of soi finfet dhananjaya tripathy1,2, debiprasad priyabrata acharya1, prakash kumar rout2, sudhansu mohan biswal2 1department of electronics and communication engineering, national institute of technology, rourkela, india 2department of electronics and instrumentation engineering, silicon institute of technology, bhubaneswar, india abstract. this paper focuses on the impact of variation in the thickness of the oxide (sio2) layer on the performance parameters of a finfet analysed by varying the oxide layer thickness in the range of 0.8nm to 3nm. while varying the oxide layer thickness, the overall width of the finfet is fixed at a value 30nm, and the finfet parameters are analysed for structures with different oxide layer thickness. the parameters like drain current, transconductance, transconductance generation factor, parasitic capacitances, output conductance, cut-off frequency, maximum frequency, gbw, energy and power consumption are calculated to study the influence of finfet oxide (sio2) layer thickness variation. it is detected from the result and analysis that the drain current, transconductance, transconductance generation factor, gain bandwidth and output conductance improve with decrement in oxide layer thickness whereas, the parasitic capacitances, cut-off frequency and maximum frequency degrade when there is a reduction in oxide (sio2) layer thickness. the parameters like energy and consumed power of finfet get better when the oxide (sio2) layer thickness increases. key words: finfet, oxide layer thickness, transconductance generation factor, maximum frequency received august 9, 2021; received in revised form january 18, 2022 corresponding author: dhananjaya tripathy department of electronics and communication engineering, national institute of technology, rourkela, india e-mail: 520ec8012@ nitrkl.ac.in * an earlier version of this paper was presented at the 4th international conference on 2021 devices for integrated circuit (devic 2021), may 19-20, 2021, in kalyani, west bengal, india [1]. 2 d. tripathy, d. p. acharya, p. k. rout, s. m. biswal introduction the demand of highly compact and denser ics have created the interest amongst the researchers to downscale the regular silicon mos field effect transistor, which results in the evolution of compact ics but, as a consequence short-channel effects (sce) are developed in the device which degrades the device parameters immensely. so, multiple gate-based devices are considered a solution to continue downscaling. these devices possess improved controllability over lower leakage currents, sces and better yield. the performance can also be improved by varying the thickness of the oxide layer [1-5]. finfet is one of the evolutionary techniques for application based less-power consuming circuits as it displays commendable performance to nullify the short-channel problems due to the fact that multiple gates are monitoring a single channel [6-11]. fin type silicon on insulator-based field effect transistor is the newly evolved technology which is presently used in ics. finfets encompass a triple-gate construction to suppress the major performance problems, such as the sces. the silicon on insulator (soi) technique insulates the internal active area from the lower part of the substrates, which internally reduces the leakage current, parasitic capacitance, and the power dissipation of circuits. hence, soi based finfets are the center of attraction nowadays. detailed studies of soi based finfets are presented in [12-18]. constructing tri-gate finfets different approaches has been followed in recent years like soi based finfets, bulk finfet [6-18]. the inverted-t structure finfet [19] is also designed which provides better drain current compared to the soi based finfet. a multilevel logic design concept is adopted in place of complex gates to reduce the process variability and radiation effects. but it is very important to study the impact of the oxide layer thickness on the performance of the device. the oxide layer thickness variation is studied in [1], where the thickness is varied from 3 nm to 10 nm. but, in general the thickness of the oxide layer should not exceed 3nm for a finfet of channel length 30nm. here, the 3-dimensional construction of finfet is analyzed by altering the oxide layer (sio2) thickness, keeping the total dimension of the finfet fixed. to realize the physical mechanism of the device, various performance parameters are evaluated based on the mathematical expressions and finally simulated to get a comparative analysis. in section ii the theory is explained. the result and discussion are presented in section iii. section iv summarizes the total work done in the paper. device structure and simulation setup the core of the finfet i.e. the fin, is placed vertically making an angle of 90⁰ to the finfet body and is responsible for the flow of current. gate material with higher work function covers the silicon fin from three sides to reduce the sces by increasing the control over the device [20]. the 3-dimensional cross-sectional view of the soi-based finfet structure is represented in fig. 1. here the oxide (sio2) layer placed between the fin and the gate is the central point of the discussion. as mentioned in the table 1, the thickness of this layer is varied from 0.8nm to 3nm, keeping the total dimension of the finfet as a constant, i.e. 30nm. the fin height and width are taken to be 20nm and 10nm with a channel length of 30nm. the length of the device is kept as 110nm which is shown in table 1. influence of oxide thickness variation on analog and rf performances of soi finfet 3 fig. 1 a 3d cross-sectional view of the soi-based finfet table 1 device specifications of finfet parameters measurements channel length 30 nm fin height 20 nm fin width 10 nm fin angle 90⁰ equivalent oxide thickness 0.8 nm 3 nm ultra-thin body thickness 10 nm total device length 110 nm total device width 30 nm the simulation process was carried out using the standard tcad simulation tool silvaco atlas (2016). to achieve better accuracy, the 3d quantum transport equations and the driftdiffusion equations are included. the bohm quantum potential (bqp) model is used for the simulation process in order to take care of the quantum effect produced in the nano scale devices. to account for the leakage currents that occur due to thermal generation process, the auger recombination/generation and shockley–read–hall (srh) model are used. for junctionless transistors, quantum confinement effect is not significant, so it is not considered. gummel-newton method is used for mathematical calculations in this study. during the whole simulation process the temperature is set at 300k. the calibration of the simulation model has been performed with the published experimental data [21] and is represented in fig. 2. fig. 2 the calibration of the id–vgs characteristics of the finfet against experimental data [22] 4 d. tripathy, d. p. acharya, p. k. rout, s. m. biswal results and discussion to investigate the effect of oxide (sio2) layer thickness, the silicon dioxide (sio2) material thickness was altered in the range of 0.8 nm to 3 nm, while preserving the overall dimension of the finfet static at 30 nm. to perceive the influence of the oxide layer thickness on numerous vital performance parameters like drain current, transconductance, transconductance generation factor, parasitic capacitances, cut-off frequency, maximum frequency, gain bandwidth, energy and power consumption [2224], etc., soi finfets were simulated and investigated for structures with different oxide layer thickness. the drain current of a device is the major parameter to be observed. the circuit is said to be more desirable if it produces more drain current for a specific gate voltage. in fig. 3 the drain current vs gate to source voltage curve is plotted for finfets with variation in sio2 layer thickness and it can be observed from the graph that the drain current increases for lesser oxide layer thickness. by decreasing the sio2 thickness, the oxide capacitance (cox) enhances, which internally rises the drain current as it is directly proportional to the cox. fig. 3 id ~ vgs curve with varying oxide layer thickness for operations at higher frequencies, the transconductance (gm ) plays a dynamic part as it implies the exaggeration capability of the finfet. it is mathematically denoted as [25] gm =∂id/∂vgs (1) fig. 4 shows the gm ~vgs curve for the finfets with different sio2 layer thickness, which displays that the lower value of oxide layer thickness provides better transconductance value. this happens due to the fact that the transconductance is proportional to drain current, and the drain current is increasing with reduction in oxide layer thickness. to analyze the impact of both transconductance and drain current on the device, the transconductance generation factor needs to be examined. the transconductance generation factor is defined as the ratio of the transconductance to the drain current and mathematically defined as [25] tgf=gm/id (2) influence of oxide thickness variation on analog and rf performances of soi finfet 5 fig. 4 gm ~ vgs curve with varying oxide layer thickness fig. 5 shows the tgf ~ vgs curve for the finfets with different sio2 layer thickness, which displays that the lower value of oxide layer thickness provides better transconductance generation factor value. the next parameter which should be analyzed is the output conductance (gds) which determines the overall gain of the device. the gds ~ vgs curve is plotted in fig. 6 by varying the sio2 layer thickness from 0.8 nm to 3 nm and it is clear from the graphical analysis that the structure with lesser oxide layer thickness possesses maximum output conductance. the output conductance is proportional to the rate of change in drain current. as the drain current increases for device with lower oxide thickness, the output conductance also increases when the thickness of the oxide layer reduces. fig. 5 tgf ~ vgs curve with varying oxide layer thickness the parasitic capacitances play a vital role in the radiofrequency (rf) performances of any device. the different parasitic capacitances are plotted in fig. 6. the cgd ~ vgs, cgs ~ vgs and cgg ~ vgs curves are shown in fig.7(a), fig.7(b) and fig.7(c) respectively. in each case the thickness of the sio2 layer is altered in the range of 0.8nm to 3nm and the behavior of each structure is analyzed. it is found in all cases that the parasitic capacitance values get reduced for increase in oxide layer thickness. the dependency of parasitic capacitances, i.e. gate-to-drain capacitance, gate-to-source capacitance and gate-to-gate 6 d. tripathy, d. p. acharya, p. k. rout, s. m. biswal capacitance on the variation of sio2 layer thickness is displayed in fig. 7(d). it is observed that the parasitic capacitance values get better due to increase in oxide layer thickness. fig. 6 gds ~ vgs curve with varying oxide layer thickness (a) (b) (c) (d) fig. 7 (a) cgd ~ vgs curve with varying oxide layer thickness; (b) cgs ~ vgs curve with varying oxide layer thickness; (c) cgg ~ vgs curve with varying oxide layer thickness; (d) capacitance ~oxide layer thickness curve at vgs=0.8v influence of oxide thickness variation on analog and rf performances of soi finfet 7 the cutoff frequency (ft) is treated as the most important component to be studied when it comes to rf applications. it is the frequency value for which the device attains the current gain value as ‘1’ and is denoted as [11] ft = gm / (2*pi*cgg) (3) and cgg = cgd+ cgs, where cgd and cgs are the gate to source and gate to drain capacitances respectively. the cut-off frequency ~vgs curve is analyzed in fig. 8 by varying the sio2 thickness ranging from 0.8 nm to 3 nm and it is observed that, the device with higher oxide layer thickness achieves better cutoff frequency. from equation (3) it is clear that the cutoff frequency is inversely proportional to the capacitance which increases for lower oxide layer thickness. so, the device with lower values of oxide layer thickness possesses lesser cutoff frequency compared to the device with higher oxide layer thickness. fig. 8 ft ~ vgs curve with varying oxide layer thickness the maximum frequency of a device is defined as the frequency at which the power gain becomes unity. it is mathematically defined as [11] fmax=gm / (2*pi*cgs*(√(4*(rs+ri+rg)*(gds+gm*(cgd/cgs))))) (4) where rg, rs, and ri are the gate, source and channel resistances respectively [26]. the dependency of the maximum frequency on the oxide layer thickness variation is analyzed through fig. 8. the fmax ~ vgs curve is represented in fig.9 where the maximum frequency of structures with varying sio2 thickness is analyzed and it is found that the maximum frequency improves with rise in oxide layer thickness. from equation (4) it is clear that the maximum frequency is inversely proportional to the parasitic capacitance which increases for lower values of oxide layer thickness. so, the device with lower values of oxide layer thickness possesses lesser maximum frequency compared to the device with higher oxide layer thickness. 8 d. tripathy, d. p. acharya, p. k. rout, s. m. biswal fig. 9 fmax ~ vgs curve with varying oxide layer thickness the trade-off between gain and bandwidth is calculated by gain bandwidth product (gbw) [27,28]. for semiconductor devices it is defined as gbw= gm / (20*pi* cgd) (5) gbw ~ vgs curve is represented in fig. 10 with variation in sio2 thickness. it is observed from the graph that the gain bandwidth is reduced with the rise in thickness of the oxide layer. from equation (5) it is clear that the gain bandwidth is inversely proportional to the gate to drain capacitance and directly proportional to transconductance. the transconductance being the more dominant parameter helps to improve the gain bandwidth for device with lower value of oxide layer thickness. fig. 10 gbw ~ vgs curve with varying oxide layer thickness along with the above discussed analog and rf performance parameters the two major parameters i.e., energy and total power consumption also need to be studied from the application point of view. hence, the below discussion will give a clear view of the above said parameters. influence of oxide thickness variation on analog and rf performances of soi finfet 9 the energy ~ vgs curve for structures with different oxide layer thickness is displayed in fig.11. it is quite understandable from the two graphs that the energy gets better for higher oxide layer thickness. this happens due to the fact that the energy (cv2) is mainly dependent on the capacitance as the supply voltage is fixed and previously it is already discussed that the capacitive effects get reduced for higher oxide layer thickness which improves the energy of the device. the power consumption of any device is proportional to its energy. hence, the power consumption also gets better for the structures with higher oxide layer thickness which is shown in fig.12. power ~ vgs curve is shown in fig. 12 with variation in sio2 thickness and power ~ oxide thickness is analyzed in fig. 12(b) at constant. it is detected that the finfet consumes more power for lesser oxide layer thickness. fig. 11 energy ~ vgs curve with varying oxide layer thickness fig. 12 power ~ vgs curve with varying oxide layer thickness 10 d. tripathy, d. p. acharya, p. k. rout, s. m. biswal conclusion in this paper, the basic finfet structure has been analysed by varying the oxide layer thickness while maintaining the total dimension of the finfet a constant. different analog and radio frequency performance parameters of the device like the drain current, transconductance, transconductance generation factor, parasitic capacitances, output conductance, cut-off frequency, maximum frequency, gain bandwidth product, energy and power consumption are determined. from the analysis it is observed that the drain current, transconductance, transconductance generation factor, gain bandwidth and output conductance degrade with increase in oxide layer thickness. whereas the parasitic capacitances get better when the oxide layer thickness rises, due to which the cut-off frequency and maximum frequency improves at higher oxide layer thickness. hence, it can be concluded that the increase in oxide layer thickness improves the radio frequency parameters whereas it degrades the analog parameters. finally, the parameters like the energy and power dissipation of finfet are determined by varying the sio2 thickness and it is concluded that these parameters improve with rise in sio2 thickness. references [1] d. tripathy, p. k. rout, d. nayak, s. m. biswal, n. singh, "the impact of oxide layer width variation on the performance parameters of finfet" in proceedings of the ieee conference (devic), may 2021, pp. 577–580. [2] c. auth, c. allen, a. blattner, d. bergstrom, m. brazier, m. bost, m. buehler, v. chikarmane, t. ghani, t. glassman and r. grover, "a 22 nm high performance and low-power cmos technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density mim capacitors",” in proceedings of the symposium on vlsi technology (vlsit), 2012, pp. 131–132. [3] a. pal and a. sarkar, "analytical study of dual material surrounding gate mosfet to suppress shortchannel effects (sces)", elsevier, pp. 205–212, july 2014. [4] a. majumdar, z. ren, s. j. koester, and w. haensch, "undoped-body extremely thin soi mosfets with back gates",” ieee trans. electron. devices, vol. 56, no. 10, pp. 2270–2276, sep. 2009. [5] m. saitoh, k. ota, c. tanaka, k. uchida and t. numata, "10 nm-diameter tri-gate silicon nanowire mosfets with enhanced high-field transport and vth tunability through thin box", in proceedings of the symposium on vlsi technology, 2012, pp. 11–12. [6] p. zheng, d. connelly, f. ding and t. k. liu, "simulation-based study of the inserted-oxide finfet for future low-power system-on-chip applications", ieee electron. device lett., vol. 36, no. 8, pp. 742–744, aug. 2015. [7] m. d. ko, c. w. sohn, c. k. baek and y. h. jeong, "study on a scaling length model for tapered tri-gate finfet based on 3-d simulation and analytical analysis", ieee trans. electron devices, vol. 60, no. 9, pp. 2721–2727, 2013. [8] k. biswas, a. sarkar and c. k. sarkar, "spacer engineering for performance enhancement of junctionless accumulation mode bulk finfets", iet circuits, devices & systems, vol. 11, pp. 80–88, sept. 2016. [9] k. biswas, a. sarkar and a. sarkar, "effect of channel doping and fin shpaes on performance of junctionless bulk finfet", in proceedings of the ieee conference (devic), 2020. [10] k. biswas, a. sarkar, c. k. sarkar, "impact of fin width scaling on rf/analog performance of junctionless accumulation-mode bulk finfet", acm j. emerg. technol. comput. syst., vol. 12, pp. 1–12, may 2016. [11] k. biswas, a. sarkar and c. k. sarkar, "fin shape influence on analog and rf performance of junctionless accumulation-mode bulk finfets", microsyst. technol., pp. 2317–2324, jan. 2018. [12] d. nagy, m. a. elmessary, m. aldegunde, r. valin, a. martinez, j. lindberg, w. g. dettmer, d. perić, a. j. garcia-loureiro and k. kalna, "3-d finite element monte carlo simulations of scaled si soi finfet with different cross sections", ieee trans. nanotechnol., vol. 14, no. 1, pp. 93–100, jan. 2015. [13] t. matsukawa, k. fukuda, y. x. liu, k. endo, j. tsukada, h. yamauchi, y. ishikawa, s. o'uchi, w. mizubayashi, s. migita and y. morita, "lowest variability soi finfets having multiple vt by backbiasing", in proceedings of the symposium on vlsi technol. syst. appl., 2014, pp. 1–2. influence of oxide thickness variation on analog and rf performances of soi finfet 11 [14] w. schwarzenbach, b.-y. nguyen, f. allibert, c. girard and c. maleville, "ultra-thin body & buried oxide soi substrate development and qualification for fully depleted soi device with back bias capability", solid-state electron., vol. 117, pp. 2–9, mar. 2016. [15] m. poljak, v. jovanovic and t. suligoj, "improving bulk finfet dc performance in comparison to soi finfet", microelectron. eng., vol. 86, no. 10, pp. 2078–2085, 2009. [16] h. w. gao, y. h. wang and t. k. chiang, "a quasi-3-d scaling length model for trapezoidal finfet and its application to subthreshold behavior analysis", ieee trans. nanotechnol., vol. 16, no. 2, pp. 281–289, mar. 2017. [17] t. chiang, "a new short-channel-effect-degraded subthreshold behavior model for double-fin multichannel fets (dfmcfets)", ieee trans. nanotechnol., vol. 16, no. 1, pp. 16–22, jan. 2017. [18] n. waldron, c. merckling, w. guo, p. ong, l. teugels, s. ansar, d. tsvetanova, f. sebaai, d. h. van dorp, a. milenin and d. lin, "an ingaas/inp quantum well finfet using the replacement fin process integrated in an rmg flow on 300mm si substrates", in proceedings of the 2014 symposium on vlsi technology digest of technical papers, 2014, pp. 232–233. [19] e. yu, k. heo and s. cho, "characterization and optimization of inverted-t finfet under nanoscale dimensions", ieee trans. electron devices, vol. 65, no. 8, pp. 3521–3527, aug. 2018. [20] m. j. h. van dal, g. vellianitis, g. doornbos, b. duriez, t. m. shen, c. c. wu, r. oxland, k. bhuwalka, m. holland, t. l. lee and c. wann, "demonstration of scaled ge p-channel finfets integrated on si", in proceedings of the 2012 international electron devices meeting, 2012, pp. 521–524. [21] t. bentrcia, f. djefal, e. chebaki and d. arar, "a kriging framework for the efficient exploitation of the nanoscale junctionless dg mosfets including source/drain extensions and hot carrier effect", in proceedings of the materials today, 2017, vol. 4, pp. 6804–6813. [22] s. k. pattnaik, u. nanda, d. nayak, s. r. mohapatra, a. b. nayak and a. mallick, "design and implementation of different types of full adders in alu and leakage minimization", in proceedings of the 2017 international conference on trends in electronics and informatics (icei), 2017, pp. 924-927. [23] d. nayak, d. p. acharya, p. k. rout and u. nanda, "a novel charge recycle read write assist technique for energy efficient and fast 20 nm 8t-sram array", solid-state electron., vol. 148, pp. 43–50, oct. 2018. [24] d. nayak, p. k. rout, s. sahu, d. p. acharya, u. nanda and d. tripthy, "a novel indirect read technique-based sram with ability to charge recycle and differential read for low power consumption, high stability and performance", microelectron. j., vol. 97, pp. 1–11, feb. 2020. [25] s. manikandan and n. b. balamurugan, "the improved rf/stability and linearity performance of the ultrathin-body gaussian-doped junctionless finfet", j. comput. electron., vol. 19, no. 2, pp. 613–621, march 2020. [26] a. sarkar and c. k. sarkar, "rf and analogue performance investigation of dg tunnel fet", int. j. electron. lett., vol. 1, no. 4, pp. 210–217, dec. 2013. [27] s. m. biswal, b. baral, d. de and a. sarkar "simulation and comparative study on analog/rf and linearity performance of iii–v semiconductor-based staggered heterojunction and inas nanowire (nw) tunnel fet", microsyst. technol., vol. 25, no. 5, pp. 1855–1861, may 2019. [28] s. misra, s. m. biswal, b. baral, s. k. swain, a. sarkar and s. k. pati, "analytical modelling of a cyljlam mosfet in the subthreshold region using distinct device geometry", j. comput. electron, vol. 20, no. 1, pp. 480–491, feb. 2021. https://ieeexplore.ieee.org/xpl/conhome/6471855/proceeding instruction facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 159 175 doi: 10.2298/fuee1602159a characterization of nonlinear loads in power distribution grid  miona andrejević stošović 1 , marko dimitrijević 1 , slobodan bojanić 2 , octavio nieto-taladriz 2 , vančo litovski 1 1 university of niš, faculty of electronic engineering, niš, serbia 2 escuela técnica superior de ingenieros de telecomunicación, universidad politecnica de madrid, madrid, spain abstract. electronic devices are complex circuits, consisting of analog, switching, and digital subsystems that require direct current (dc) for polarization. since they are connected to the mains delivering alternating current (ac), however, ac-to-dc converters are to be introduced between the mains and the electronics to be fed. a converter is an electric circuit containing several subsystems, the most important being the switch-mode power supply, drawing power from the mains in pulses hence it is highly nonlinear. that happens, in reduced amplitude, even when the electronics to be fed is switched off. the process of ac-to-dc conversion is not restricted to feeding electronic equipment only. it is more and more frequently encountered in modern smart-grid facilities giving rise to the importance of the studies referred hereafter. the converter can be studied (theoretically or by measurements) as two-port network with reactive and nonlinear port-impedances. characterization is performed after determining the port electrical quantities which are voltages and currents. based on these data power and power quality parameters – power factor and total harmonic distortionmay be extracted. when nonlinear loads are present, one should introduce new ways of thinking into the considerations due to the existence of harmonics and related power components. in that way the power factor can be generalized to total or true power factor where the apparent power, involved in its calculations, includes all harmonic components. after introducing a wide range of definitions used in contemporary literature, here we describe our measurement set-up both as hardware and a software solution. the results reported unequivocally confirm the importance of the subject of characterization of small nonlinear loads to the grid having in mind their number which is rising without saturation seen in the near and even far future. key words: smart grid, nonlinear loads, load characterization, power factor, harmonic distortions received september 29, 2015 corresponding author: miona andrejević stošović university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: miona.andrejevic@elfak.ni.ac.rs) 160 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski 1. introduction with the advent of modern diversified sources of electrical energy, the issue of power quality becomes both more ambiguous and more complicated. we will address here first the new aspects that are coming in fore thanks to the new ways of producing electrical energy, which are becoming more and more popular, and thanks to the emergence of a new paradigm known as smart-grid which involves mutual interaction of power electrical systems and electronic systems for its proper functionality [1]. nowadays we are witnessing changes in the demand and energy use which in fact means “new” load characteristics, and trends changing the nature of the aggregate utility consumption. all of that is mostly due to the electronic devices that became ubiquitous. it is presumed that the overall household consumption for electronic appliances will rise with a rate of 6% per year so reaching 29% of the total household consumption in the year 2030. in the same time the household consumption is expected to reach 40% of the overall electricity demand. the immense rise of the office consumption due to the enormous number of computers in use is also to be added. that stands for educational, administrative, health, transport, and other public services, too. one may get the picture if one multiplies the average consumption of a desk-top (about 120 w) with the average number of hours per day when the computers is on (about 7), and the number of computers (billion(s)?). electronic loads are strongly related to the power quality thanks to the implementation of ac/dc converters that in general draw current from the grid in bursts. the current voltage relationship of these loads, looking from the grid side, is nonlinear, hence nonlinear loads. in fact, while keeping the voltage waveform almost sinusoidal, they impregnate pulses into the current so chopping it into seemingly arbitrary waveform and, consequently, producing harmonic distortions. having all this in mind the means for characterization of the load from the nonlinearity point of view becomes one of the inevitable tools of quality evaluation of smart grid. the problem is further complicated when different power generation technologies and resources are combined leading. new subsystem in the power production, transport, and consumption emerge named micro-grids and the overall system is supposed to become a smart-grid. for example, due to the rise of the number of different kind of electricity sources even the frequency of the grid voltage may be considered as “unknown” asking for algorithms and software to be implemented in real time to extract the frequency value [2] and, based on that, to compute the amplitudes of the harmonics [3, 4, 5]. due to the nonlinearities, measurement of power factor and distortion, however, usually requires dedicated equipment. for example, use of a classical ammeter will return incorrect results when attempting to measure the ac current drawn by a non-linear load and then calculate the power factor. a true rms multi-meter must be used to measure the actual rms currents and voltages and apparent power. to measure the real power or reactive power, a wattmeter designed to properly work with non-sinusoidal currents must be also used. contemporary methods and algorithms for spectrum analysis are presented in this paper. the basic definitions of parameters describing nonlinear loads are introduced. alternative definitions for reactive power and their calculation methods are elaborated, also. in our previous research we were first developing a tool for efficient measurements that would allow for proper and complete characterization of the nonlinear loads [6, 7]. namely we found that the tools for characterization of modern loads available on the market, most frequently, lack at least one of the following properties: low price, ability of implementation of complex data processing algorithms (versatility), ability to store and characterization of nonlinear loads in power distribution grid 161 statistically analyze the measured data, and ability to communicate with its environment no matter how distant it is. all these were achieved by the system reported in [6, 7] and the measurement results demonstrated here were obtained by these tools. next, we implemented these tools for characterization of small loads. the results obtained, as reported in [8] and [9] for example, were, in some cases, surprisingly different from what expected. that stands for the power components which are not the active power and for the abundance of harmonics. in [10] and [11] we demonstrated that based on the main's current, by proper data processing, despite the complex signal transformation between the mains and the components of a computer via the power supply chain, one may deduce the activities within the computer. even more, one may recognize a software running within the computer. such information is distributed via the grid. here we will for the first time summarize the theoretical background of all computations necessary to be performed for complete characterization of small loads. then, we will demonstrate our new results in the implementation of the theory and the measurement tools on a set of nonlinear loads. the definitions used in modern characterization of the main's current, voltage, and power which are implemented by our system will be listed in the second section so enabling the main attention to be devoted to the set of measured results and their analysis, which will be given next. the paper will be organized as follows. first a short description of the measurement experiment will be given. to preserve conciseness, for this purpose, we will mainly refer to our previous work. 2. parameter definitions although power quality is a relatively ambiguous concept, limited mostly to conversations among utility engineers and physicists, as electronic appliances take over the home, it may become a residential issue as well. 2.1. linear loads with sinusoidal stimuli a sinusoidal voltage source rms( ) 2 sin(ω )v t v t (1) supplying a linear load, will produce a sinusoidal current of rms( ) 2 sin(ω φ)i t i t  (2) where vrms is the rms value of the voltage, irms is the rms value of the current, ω is the angular frequency, φ is the phase angle and t is the time. the instantaneous power is ( ) ( ) ( )p t v t i t  (3) and it can be represented as rms rms ( ) 2 sinω sin(ω ) .p qp t v i t t p p     (4) using trigonometric transformations, we can write: rms rms cosφ (1 cos(2ω )) (1 cos(2ω ))pp v i t p t        (5) and 162 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski rms rms sinφ sin(2ω ) sin(2ω )qp v i t q t        (6) where rms rms rms rms cosφ, sinφ p v i q v i       (7) represent real (p) and reactive (q) power. it can be easily shown that the real power presents the average of the instantaneous power over a cycle: 0 0 t +t t 1 ( ) ( )p v t i t dt t    (8) where t0 is arbitrary time (constant) after equilibrium, and t is the period (20ms in european and 1/60s in american system, respectively). the reactive power q is the amplitude of the oscillating instantaneous power pq. the apparent power is the product of the root mean square value of current times the root mean square value of voltage: rms rmss v i  (9) or: 2 2 .s p q  (10) power factor is simply defined as the ratio of real power to apparent power [12, 3]: / .tpf p s (11) for pure sinusoidal case, using (7), (10) and (11) we can calculate: cosφ.tpf  (12) 2.2. nonlinear loads when there is a nonlinear load in the system, it operates in non-sinusoidal condition and use of well known parameters such as power factor, defined as cosine of phase difference, does not describe system properly. in that case, traditional power system quantities such as effective value, power (active, reactive, apparent), and power factor need to be numerically calculated from sampled voltage and current sequences by performing dft, fft or goertzel algorithm [3]. the rms value of some periodic physical entity x (voltage or current) is calculated according to the well-known formula [13, 14]: 0 0 t +t 2 rms t 1 ( ( )) t x x t dt  (13) where x(t) represents time evolution, t is the period and t0 is arbitrary time. for any periodic physical entity x(t), we can give fourier representation: 0 1 ( ) ( cos( ω ) sin( ω ))k k k x t a a k t b k t        (14) characterization of nonlinear loads in power distribution grid 163 or 0 1 ( ) cos( ω )k k kx t c c k t        (15) where 0 0c a represents dc component, 2 2 k k kc a b  magnitude of k th harmonic, k = arctan(bk/ak) phase of k th harmonic and  = 2/t, angular frequency. fourier coefficients ak, bk are: t / 2 t / 2 0 t / 2 t / 2 1 2 2 π ( ) ,      ( ) cos t t t k k t a x t dt a x t dt                (16) and t / 2 t / 2 2 2 π ( ) sin . t k k t b x t dt t            (17) the rms value of k th harmonic is k, rms / 2.kx c (18) we can calculate total rms value 2 2 2 rms , rms 1, rms h, rms 1    m k k x x x x     (19) where m is the highest order harmonic taken into calculation. index “1” denotes first or fundamental harmonic, and index “h” denotes contributions of higher harmonics. equations (13) – (19) need to be rewritten for voltage and current. practically, we operate with sampled values and integrals (16) and (17) are transformed into finite sums. for a single-phase system where k is the harmonic number, k phase difference between voltage and current of k th harmonic and m is the highest harmonic, the total active power is given by: ,rms ,rms 1 h 1 cosφ . m k k k k p i v p p       (20) the first addend in the sum (20), denoted with p1, is fundamental active power. the rest of the sum, denoted with ph, is harmonic active power [13]. in the literature, there exists a number of definitions of reactive power for nonsinusoidal conditions that serve to characterize nonlinear loads and measure the degree of loads’ non-linearity [14]. as more general term, non-active power n, was introduced. each definition has some advantages over others. but, although there is tendency to generalize, there is no generally accepted definition. the most common definition of reactive power is budeanu’s definition [15], given by following expression for single phase circuit: b ,rms ,rms 1 sinφ .k k k k q i v      (21) 164 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski budeanu proposed that apparent power consists of two orthogonal components, active power (20) and non-active power, which is divided into reactive power (21) and distortion power: 2 2 2 b .d u p q   (22) it should be noted that the actual contribution of harmonic frequencies to active and reactive power is small (usually less than 3% of the total active or reactive power). the major contribution of higher harmonics to the power comes as distortion power. the apparent power, for non-sinusoidal conditions conventionally denoted as u, can be written: 2 2 1 2 2 h 2 2 2 2 2 1,rms 1,rms 1,rms h,rms 2 2 2 2 1,rms h,rms ,rms h,rms v i s d h d s u i v i v v i v i          (23) where s1 represents fundamental apparent power, dv voltage distortion power, di current distortion power and sh harmonic apparent power. s1 and sh are 2 2 2 2 2 1 1 1 h h h h, s p q s p q d     (24) where dh represents harmonic distortion power. the total apparent power, denoted with u, is 2 2 2 rms rms.u p q d i v     (25) we can also define non-active power n, defined with equation 2 2n q d  (26) and phasor power s, defined in the same way as apparent power for sinusoidal conditions (10). it is obvious that for sinusoidal conditions, apparent power and phasor power are equal, and (25) reduces to (10). the total harmonic distortions, thd, are calculated from the following formula [12, 13]: h, rms 2 , rms 2 2 2 rms  1, rms 2  1, rm1, rms 1, rms s 1 m i j j i thd i i i i ii      (27) and h, 2 , rms 2 2 rms 1, rms 2 1, rm, s21, 1 1 m rms v k krms rms vv th v v d v v v      (28) where ij, vk j, k=1, 2, …, m stands for the harmonic of the current or voltage. it can be shown that: 1, rms h, rms 1 h, rms 1, rms 1 1 . i i v v h i v d v i s thd d v i s thd s s thd thd            (29) characterization of nonlinear loads in power distribution grid 165 fundamental power factor or displacement power factor is given by the following formula: 1 1 1 1 cos . p pf s   (30) total power factor tpf [12, 13], defined by equation (12), taking into calculation (11) and (23), is 1 h 2 2 2 2 1 hi v p pp tpf u s d d u       (31) and substituting (29) and (30):   h 1 1 22 2 1 cosφ . 1 i v i v p p tpf thd thd thd thd            (32) total power factor can be represented as product of distortion power factor dpf and displacement power factor pf1, i.e. cos1: 1cosφtpf dpf  (33) therefore, distortion power factor is [12, 13]   h 1 22 2 1 . 1 i v i v p p dpf thd thd thd thd       (34) in real circuits, ph << p1 and voltage is almost sinusoidal (thdv < 5%), leading to simpler equation for tpf [12, 13]: 1 2 cosφ . 1 i tpf thd   (35) 2.3. other definitions of reactive power budeanu’s definition the most common definition of reactive power is budeanu’s definition [16], given by following expression for single phase circuit, as mentioned earlier in the text: b ,rms ,rms 1 sink k k k q i v       (36) budeanu proposed that apparent power consists of two orthogonal components, active power and non-active power, which is divided into reactive power (36) and distortion power: 2 2 2 b b .d u p q   (37) ieee std 1459-2010 proposes reactive power to be calculated as: ,rms ,rms 2 2 2 ieee 1 sin k k k k q i v       (38) 166 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski equation (38)eliminates the situation where the value of the total reactive power q is less than the value of the fundamental component. kimbark’s definition similar to budeanu’s definition, kimbark [17] proposed that apparent power consists of two orthogonal components, non-active and active power, defined as average power. the non-active power is separated into two components, reactive and distortion power. the first is calculated by equation k 1,rms 1,rms 1sinq i v    (39) it depends only on fundamental harmonic. the distortion power is defined as non-active power of higher harmonics: 2 2 2 k k .d u p q   (40) sharon’s definition this definition [18], introduces two quantities: reactive apparent power, sq, and complementary apparent power sc, defined as: 2 2 q rms ,rms 1 sink k k s v i       (41) and 2 2 2 c qs u p s   (42) where s is apparent power (9) and p active power(8). fryze’s definition fryze’s definition [19] assumes instantaneous current separation into two components named active and reactive currents. active current is calculated as a 2 rms ( ) ( ) p i t v t v  (43) and reactive current as: r a( ) ( ) ( ).i t i t i t  (44) active and reactive powers are rms a f rms r p v i q v i     (45) where ia and ir represent rms values of instantaneous active and reactive currents. kusters and moore’s power definitions kusters-moore definition [20] presents two different reactive power parameters, inductive reactive power: characterization of nonlinear loads in power distribution grid 167 ,rms ,rms 1 l rms 2 ,rms 2 1 1 sink k k k k k v i k q v v k             (46) and capacitive reactive power: ,rms ,rms 1 c rms 2 2 ,rms 1 sin . k k k k k k k v i q v k v              (47) there are other power decompositions, not considered in this paper: shepard-zakikhani [21], depenbrock [22] and czarnecki decomposition [23, 24]. more comprehensive comparison of reactive power definitions, obtained by means of simulation, can be found in [25]. 3. measurement system in order to establish a comprehensive picture about the properties of a given load one needs to perform complete analysis of the current and voltage waveforms at its terminals. in that way the basic and the higher harmonics of both the current and the voltage may be found. more frequently, however, indicators related to the power are sought in order to quantitatively characterize the load. namely, a linear resistive load will have voltage and current in-phase and will consume only real power. any other load will deviate from this characterization and one wants to know the extent of deviation expressed by as much indicators as necessary to get a complete picture. all these were implemented in our measuring system which will be shortly described in the next. the solution, as described in full details in [6, 7], is based on a real time system for nonlinear load analysis. the system is based on virtual instrumentation paradigm, keeping main advantage of legacy instruments – determinism in measurement. the system consists of three subsystems: acquisition subsystem, real time application for parameter calculations, and virtual instrument for additional analysis and data manipulation (fig. 1). tcp/ippcifpga rtos gpos n ni9225l1 l3 l2 ni9227 fig. 1 the system architecture the acquisition subsystem, fig. 2, is implemented using field programming gate array (pxi chassis equipped with pxi-7813r fpga card with virtex ii fpga) in control of data acquisition [26]. acquisition is performed using ni 9225[27] and ni 9227 [28] cseries acquisition modules connected to pxi-7813r fpga card [26]. a/d resolution is 168 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski 24-bit, with 50 ksa/s sampling rate and dynamic range ±300 v for voltages and ±5 a for currents. the fpga provides timing, triggering control, and channel synchronization maintaining high-speed, hardware reliability, and strict determinism. the fpga code is implemented in a labview development environment. the function of the fpga circuit is acquisition control. a a a a v v v dut ni 9225 ni 9227 l1 l2 l3 n fig. 2 connection diagram of acquisition subsystem the software component is implemented in two stages, executing on real-time operating system (pharlap rtos, [29, 30]) and general purpose operating system (gpos). described system enables calculation of a number of parameters in real-time that characterize nonlinear loads, which is impossible using classical instruments. the measured quantities are calculated from the current and voltage waveforms according to ieee 1459-2000 and ieee 1459-2010 standards [12, 13]. real time application (fig. 3) calculates power and power quality parameters deterministically and saves calculated values on local storage. the application is executed on real time operating system. fig. 3 part of real-time application in g code, alternative reactive power calculations characterization of nonlinear loads in power distribution grid 169 virtual instrument, implemented in national instruments labview [30, 31] environment, is used for additional analysis and data manipulation represents user interface of described system. it runs on general purpose operating system, physically apart from the rest of the system. communication is achieved by tcp/ip. parameters and values obtained by means of acquisition and calculations are presented numerically and graphically (fig. 4). fig. 4 virtual instrument provides measurements of various parameters 4. measurement results we have performed measurements on various small loads. the parameters obtained may be used for decision making of various kinds, such as verification of compliance to some standards or categorization within quality frames. as small loads here we consider various devices: cfl and led lamps, power supply devices and battery chargers in case of personal communication and computing devices. these devices are ubiquitous and in everyday use, thus their cumulative effect on power distribution grid is not negligible [32], [33]. various parameters that characterize nonlinearity, efficiency and quality are measured and calculated. table 1 shows measured results obtained on small loads such as various compact fluorescent lamps (cfl, 7 w – 20w), incandescent lamps (100w and 60w), two low-power 1 w indoor led (light emitting diode) lamps, prototype of street 34 w led lamp and crt computer monitor for reference. compact fluorescent lamp is good example of nonlinear load [34]. it brings reduction in total energy consumption (about 20%, comparing to incandescent lamp of equivalent luminosity), but with harmonic currents and increased harmonic loss on distribution transformer. measurements show that cfl lamps have good correction of displacement power factor, but significant distortion leading to low total power factor (table 1). cfls are equipped by power supply units which conduct current only during a very small part of fundamental period, so the current drawn from the grid has the shape of a short impulse. 170 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski table 1 cfl and led lamps type n o m in al p o w er ( w ) f re q u en cy (h z) v r m s (v ) i r m s ( m a ) a ct iv e p o w er ( w ) i d c ( m a ) v o lt ag e t h d (% ) c u rr en t t h d (% ) c u rr en t c r e s t v o lt ag e c r e s t d p f ( % ) co s( φ ) t p f ( % ) incandescent 100 50.03 230.20 421.66 97.02 0.62 3.11 3.05 1.52 1.47 99.95 1.00 99.95 cfl bulb 20 50.03 231.49 134.87 18.64 0.24 2.58 112.17 3.38 1.41 66.55 0.90 59.70 cfl tube 20 49.95 231.20 145.89 19.66 0.25 2.84 114.01 4.33 1.44 65.94 0.88 58.28 cfl bulb 15 49.99 231.47 92.16 12.60 0.13 2.82 115.52 3.52 1.41 65.45 0.90 59.08 incandescent 60 49.97 231.15 257.88 59.58 0.42 2.87 2.84 1.57 1.41 99.96 1.00 99.96 cfl spot 7 49.97 232.48 50.86 7.23 0.19 2.81 104.24 3.24 1.40 69.23 0.88 61.20 cfl bulb 7 50.06 230.95 52.46 7.21 0.28 2.83 112.26 3.42 1.40 66.51 0.90 59.54 cfl bulb 9 50.01 233.20 60.54 8.25 0.11 2.87 116.93 3.60 1.39 64.99 0.90 58.44 cfl tube 11 50.01 233.17 84.34 11.66 0.16 2.79 112.27 3.37 1.45 66.51 0.89 59.28 cfl tube 18 50.01 221.32 135.56 18.40 0.38 2.82 107.35 4.52 1.45 68.16 0.90 61.32 cfl tube 11 50.01 221.14 115.00 14.06 0.16 3.01 119.30 4.06 1.46 64.24 0.86 55.41 cfl helix 11 50.00 221.83 76.73 10.23 0.25 2.96 109.26 4.90 1.47 67.51 0.89 60.09 cfl bulb 9 49.99 232.52 70.06 9.70 0.19 2.84 110.87 3.52 1.43 66.98 0.89 59.53 cfl helix 18 50.01 221.46 138.68 19.01 0.35 2.89 105.56 3.94 1.43 68.77 0.90 61.71 cfl helix 20 50.03 231.19 156.43 21.02 0.20 2.79 111.36 3.91 1.44 66.82 0.87 58.13 cfl tube 15 50.01 221.00 105.09 13.96 0.29 3.16 112.13 4.46 1.40 66.56 0.90 60.11 led white 1 50.00 217.24 14.96 0.35 0.09 2.36 21.14 1.72 1.38 97.84 0.11 10.79 led cold w. 1 49.94 217.33 14.95 0.35 0.08 2.36 21.14 1.72 1.38 97.84 0.11 10.79 led street 34 49.99 216.63 246.12 32.87 0.05 2.53 102.98 3.28 1.38 69.66 0.89 61.66 crt  50.03 232.63 475.86 107.46 1.60 2.93 13.24 1.65 1.49 99.14 0.98 97.69 characterization of nonlinear loads can be accomplished by analyzing reactive and distortion power. table 2 shows reactive power and distortion power values, calculated using alternative definitions, for compact fluorescent lamps, two incandescent lamps and indoor led lamps. following values are displayed: active power (p), apparent power (s), non-active power (n), budeanu’s reactive power (qb), budeanu’s distortion power (db), fryze’s reactive power (qf), ieee std 1459-2010 proposed definition for reactive power (qieee), shanon’s apparent power (sq), kimbark’s reactive power (qk), kusters-moore’s capacitive (qc) and inductive (ql) reactive power. comparison of budeanu’s reactive and distortion power suggests that all examined cfl and led lamps are non-linear loads (db>qb). reactive power calculated from fryze’s definition (45) is equal to non-active power, 2 2n s p  . kimbark’s equation (39) for reactive power, which takes only fundamental harmonic into account, gives approximately ±3% deviance from budeanu’s formula (qb). it suggests that the actual contribution of harmonic frequencies to reactive power is small – less than 3% of the total reactive power. ieee proposed definition always provides value of the total reactive power greater than the value of the fundamental component. characterization of nonlinear loads in power distribution grid 171 table 2 cfl and led lamps no. type p o w er p ( w ) u (v a ) n ( v a r ) q b (v a r ) d b (v a r ) q f (v a r ) q ie e e ( v a r ) s q ( v a r ) q k ( v a r ) q c ( v a r ) q l ( v a r ) 1 cfl rod 11.56 17.84 13.58 -6.16 12.10 13.58 6.16 10.24 -6.16 -4.43 -6.11 2 cfl bulb e27 20 17.14 27.72 21.78 -8.43 20.08 21.78 8.43 14.48 -8.43 -6.46 -8.37 3 cfl tube e27 20 16.77 28.46 23.00 -8.44 21.39 23.00 8.45 14.55 -8.45 -6.07 -8.39 4 cfl bulb e27 15 11.59 18.91 14.94 -5.31 13.97 14.94 5.32 9.22 -5.32 -4.00 -5.28 5 inc e27 100 86.77 86.78 0.80 -0.50 0.63 0.80 0.50 0.56 -0.50 -0.36 -0.49 6 cfl spot e14 7 5.87 9.32 7.25 -2.83 6.67 7.25 2.81 4.23 -2.81 -2.17 -2.80 7 cfl bulb e27 7 6.16 9.86 7.71 -2.64 7.24 7.71 2.65 4.83 -2.65 -2.03 -2.63 8 cfl bulb e14 9 6.46 10.78 8.63 -2.72 8.19 8.63 2.72 5.45 -2.72 -2.08 -2.70 9 cfl tube e14 11 9.89 16.11 12.72 -4.71 11.82 12.72 4.69 7.89 -4.69 -3.61 -4.66 10 cfl tube e27 18 17.10 28.86 23.24 -8.73 21.54 23.24 8.75 13.27 -8.75 -6.64 -8.68 11 cfl tube e27 11 10.63 17.67 14.12 -5.83 12.85 14.12 5.83 8.85 -5.83 -4.41 -5.79 12 cfl helix e27 11 9.58 16.27 13.16 -4.93 12.20 13.16 4.95 8.75 -4.95 -3.68 -4.90 13 inc e14 60 55.06 55.06 0.61 -0.37 0.49 0.61 0.37 0.37 -0.37 -0.27 -0.37 14 cfl helix e27 18 17.21 28.87 23.18 -8.82 21.43 23.18 8.83 15.55 -8.82 -6.77 -8.76 15 cfl helix e27 20 18.41 30.68 24.54 -9.95 22.43 24.54 9.93 16.14 -9.93 -7.56 -9.86 16 cfl tube e27 15 12.66 21.97 17.95 -6.32 16.80 17.95 6.33 11.63 -6.33 -4.80 -6.28 17 spot e27 15 16.92 34.24 29.77 -3.88 29.52 29.77 4.14 20.01 -4.13 -1.98 -4.06 18 spot e27 10 13.23 26.33 22.76 -2.97 22.56 22.76 3.17 15.45 -3.17 -1.51 -3.12 19 bulb w e27 8 10.00 19.53 16.77 -2.81 16.54 16.77 2.94 11.52 -2.93 -1.74 -2.89 20 bulb w e27 6 8.51 9.45 4.11 0.08 4.11 4.11 0.07 3.29 0.07 0.08 0.07 21 bulb e27 6 8.69 9.58 4.04 0.09 4.04 4.04 0.08 3.28 0.08 0.08 0.08 22 bulb e27 3 4.07 7.70 6.54 -0.84 6.48 6.54 0.90 4.35 -0.90 -0.45 -0.88 23 rgb e27 3 1.92 3.17 2.52 0.01 2.52 2.52 0.01 1.39 0.00 0.05 0.00 24 spot e14 3 4.00 8.05 6.99 -0.98 6.92 6.99 1.04 4.86 -1.04 -0.52 -1.02 further, personal devices such as tablet computer, mobile phone, laptop computer and cordless telephone containing rechargeable batteries are analyzed regarding operating conditions. measured results are presented in table 3. working conditions are standby (device turned off and battery not charging), working and charging (device turned on and battery charging) and charging only (device turned off and battery charging). a standalone battery charger is also tested. following values are measured and shown in the table: voltage rms (v), current rms (i), frequency (f), cosine of 1st harmonic phase difference (cosφ1), tpf – total power factor (%), dpf – distortion power factor (%), thdv – voltage total harmonic distortion (%),thdi – current total harmonic distortion (%), active power (p), budeanu’s reactive power (qb), apparent power (u), distortion power (d), non-active power (n), phasor power (s), first harmonic active power (p1) and higher harmonics active power (ph). 172 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski in the next we will pay some attention to the very results depicted in table 3. let's first have a glimpse at the distortions of the current (thdi). as can be seen even in the best cases the thdi is larger than 20%. there is a case, a mobile phone battery charger while charging, where the thdi is 154.51% which means the harmonics exceed by a large margin the fundamental. note that this is not an isolated case. one may observe several thdis of similar value. to summarize, thdi is exposing the nonlinear character of all small loads, some of which are extremely nonlinear producing harmonics larger than the fundamental one. table 3 personal devices in different working conditions n o . device description v ( v ) i (m a ) f (h z) 1 charger 230v 1.7a 2xaaa nicd battery charging. 850mah 236.06 9.89 50.02 2 tablet computer turned on. li-polimer 8220 mah battery charging 235.70 80.92 49.98 3 tablet computer turned off. li-polimer 8220 mah battery charging 236.59 61.65 49.99 4 tablet computer turned off. charger 230v/2a connected. not charging 236.51 1.70 50.00 5 mobile phone charger connected. not charging 230v/0.2a 236.62 1.33 9.99 6 mobile phone turned on. li-ion 1230 mah battery charging 235.65 53.72 49.98 7 mobile phone turned off. li-ion 1230 mah battery charging 236.09 48.05 50.01 8 laptop comp. (type 1) turned on. charger 230v. 1.7a connected, not charging 233.49 22.99 50.01 9 laptop comp. (type 1) turned on. li-ion 2200mah battery charging 232.81 231.39 50.00 10 laptop comp. (type 1) turned off. li-ion 2200mah battery charging 233.52 106.52 49.99 11 laptop comp. (type 2) turned on. charger 230v 1.5a connected, not charging 233.07 15.71 49.99 12 laptop computer (type 2) turned on. li-ion 4400mah battery charging 232.05 436.60 49.97 13 cordless telephone base charger 230v/40ma disconnected 232.77 21.05 49.97 14 cordless telephone base. 2xaaa. nicd. 550mah battery not charging 233.68 21.71 50.00 15 cordless telephone base. 2xaaa. nicd. 550mah battery charging 233.55 25.60 49.99 n o . t p f ( % ) d p f ( % ) t h d v ( % ) t h d i (% ) p ( w ) q b ( v a r ) u ( v a ) d ( v a r ) n ( v a r ) s ( v a r ) p 1 ( w ) p h (w ) 1 32.93 70.81 1.70 94.47 0.77 1.77 2.33 1.62 2.20 1.68 0.78 -0.02 2 57.36 58.15 1.73 137.76 10.94 -1.74 19.07 15.53 15.62 11.08 11.08 -0.14 3 55.12 55.54 1.70 146.23 8.04 -0.93 14.59 12.13 12.17 8.09 8.17 -0.12 4 21.43 79.20 1.67 114.80 0.09 0.18 0.40 0.35 0.39 0.20 0.05 0.00 5 12.64 101.35 1.69 59.01 0.04 0.17 0.31 0.26 0.31 0.18 0.02 0.00 6 52.73 53.66 1.71 154.51 6.67 -1.18 12.66 10.69 10.76 6.78 6.73 -0.05 7 51.18 51.98 1.77 161.72 5.81 -0.96 11.34 9.70 9.75 5.88 5.87 -0.06 8 7.00 95.18 1.78 29.07 0.38 1.38 5.37 1.61 5.36 5.12 0.38 -0.01 9 53.67 54.76 2.00 147.11 28.91 -6.10 53.87 45.04 45.45 29.55 29.65 -0.71 10 47.51 50.62 1.92 164.35 11.82 -4.64 24.87 21.39 21.89 12.70 12.18 -0.28 11 12.69 99.22 1.94 40.82 0.46 1.46 3.66 1.42 3.63 3.37 0.43 0.00 12 96.74 97.30 1.83 20.90 98.01 -10.67 101.31 23.32 25.65 98.59 97.86 0.02 13 23.50 90.76 1.80 43.70 1.15 4.33 4.90 1.97 4.76 4.48 1.16 -0.01 14 47.31 92.64 1.78 36.64 2.40 4.09 5.07 1.81 4.47 4.74 2.43 -0.01 15 70.29 92.99 1.82 37.24 4.20 3.66 5.98 2.16 4.25 5.57 4.23 -0.02 characterization of nonlinear loads in power distribution grid 173 the next very important and also interesting set of data is related to the power factor. in early days it was known as cos of the load while only linear loads were considered supposedly having reactive component introducing phase shift between the voltage and the current. the total power factor (tpf) encompasses the whole event including the distortions of both the voltage and the current and their mutual phase shift. as can be seen from table 1, there is only one case where the tpf is approaching unity which is supposed to be its ideal value. in many of the cases the value of tpf is smaller than 50% meaning that the active power is smaller than a half of the total power drawn from the main which, as we could see from the previous paragraph, is mainly due to the distortions. in general, since most of the chargers are considered of small power (look to the column p1 in table 3), no power factor correction is built in so that significant losses are allowed. that, to repeat once more, would not be a problem if the number of such devices, being attached to the mains all the time, is not in the range of billion(s). the next column, the distortion power factor (dpf), represents the percentage of power taken by the harmonics. as we can see, except for a small number of cases where the harmonics are approximately on the level of half of the total power, in most cases they are taking as large power as the fundamental. note, the harmonics are unwanted not only because of efficiency problems. in fact, in the long term, the presence of harmonics on the grid can cause:  increased electrical consumption  added wear and tear on motors and other equipment  greater maintenance costs  upstream and downstream power-quality problems,  utility penalties for causing problems on the power grid  overheating in transformers, and similar. similar conclusion may be drawn in by comparison of the distortion (d) and the power of the first (fundamental) harmonic (p1). there are only three cases where the second is larger than the former. to summarize the data from table 3 one may say that an electronic load to the grid which in fact represents a power supply of a telecommunication or it device, represents a small but highly nonlinear load. in many cases the tpf of such a load is in favor of everything but not the active power to be delivered to the device. 5. conclusion due to the changes in the nature of the electrical loads to the grid new aspects of the characterization of the loads to the electrical grid are emerging. these are related mainly to the nonlinearities of modern electronic loads and to the subsystems used for conversion from dc to ac and vice versa that is becoming unavoidable in modern production and distribution systems. to qualify and quantify the properties of the modern power electrical systems new tools are to be developed being able to cope with the new properties of the signals arising at the grid-to-load and grid to power-producing-facility interface. that stands for both theoretical algorithms for computation and for the very measurement equipment. in these proceedings we represent our results in development and implementation of a measurement system for small loads that are becoming ubiquitous and consequently of big concern for the quality of the delivered electrical energy. we also present the measurement 174 m.andrejević-stošović, m. dimitrijević, s. bojanić, o. nieto-taladriz, v. litovski results for a broad set of electronic loads revealing many secrets hidden behind the prejudice that these loads are small and unimportant. our hardware and software solutions may be characterized as advanced, accurate and versatile while at the same time of low price making them very attractive for practical use being it in laboratory or in field conditions. acknowledgement: this research was partly funded by the ministry of education and science of republic of serbia under contract no tr32004. references [1] l. freeman, “the changing nature of loads and the impact on electric utilities”, tech advantage expo electronics exhibition and conference 2009, new orleans, usa, feb. 2009, www.techadvantage.org/ 2009conferencehandouts/2e_freeman.pdf. [2] v. terzija, v. stanojević, “stls algorithm for power-quality indices estimation”, ieee transactions on power delivery, vol. 24, no. 2, pp. 544-552, april 2008. [3] g. goertzel, “an algorithm for the evaluation of finite trigonometric series”, the american mathematical monthly, no. 1, vol. 65, pp. 34-35, january 1958. [4] s. vukosavić, “detection and suppression of parasitic dc voltages in 400 v ac grids”, facta universitatis, series: electronics and energetics, vol. 28, no 4, pp. 527-540, december 2015. [5] l. korunović, m. rašić, n. floranović, v. aleksić, “load modelling at low voltage using continuous measurements”, facta universitatis, series: electronics and energetics, vol. 27, no. 3, pp. 455-465, september 2014. [6] m. dimitrijević, v. litovski, “power factor and distortion measuring for small loads using usb acquisition module”, journal of circuits, systems, and computers, vol. 20, no. 5, pp. 867-880, august 2011. [7] m. dimitrijević, “electronic system for polyphase nonlinear load analysis based on fpga“, phd thesis, niš, 2012 (in serbian). [8] m. dimitrijević, and v. litovski, “quantitative analysis of reactive power definitions for small nonlinear loads”, in proc. of the 4th small systems simulation symposium, niš, serbia, 2012, pp. 150-154. [9] m. dimitrijević, and v. litovski, “real-time virtual instrument for polyphase nonlinear loads analysis“, in proc. of the ix int. symp. on industrial electronics, indel 2012, banja luka, b&h, november 2012, pp. 136-141. [10] m. andrejević stošović, m. dimitrijević, and v. litovski, “computer security vulnerability as concerns the electricity distribution grid”, applied artificial intelligence, vol. 28, pp. 323–336, 2014. [11] m. dimitrijević, m. andrejević stošović, j. milojković, v. litovski, “implementation of artificial neural networks based ai concepts to thesmart grid”, facta universitatis, series: electronics and energetics, vol. 27, no. 3, pp. 411-424, september 2014. [12] -,”ieee trial-use standard definitions for the measurement of electric power quantities under sinusoidal, non-sinusoidal, balanced, or unbalanced conditions”, ieee power engineering society, ieee std. 1459-2000, 30. january 2000. [13] ieee power engineering society: ieee trial-use standard definitions for the measurement of electric power quantities under sinusoidal, nonsinusoidal, balanced, or unbalanced conditions. ieee std. 1459-2010, 2. february 2010. [14] l. s. czarnecki, “harmonics and power phenomena”, encyclopedia of electrical and electronics engineering, j. wiley and sons, 1999. [15] a. e. emanuel, “power definitions and the physical mechanism of power flow”, j. wiley and sons, 2010. [16] c. i. budeanu, “reactive and fictitious powers.” rumanian national institute, no. 2.,1927. [17] e. w. kimbark, “direct current transmission” j. wiley and sons, 1971. [18] d. sharon, “reactive power definition and power-factor improvement in nonlinear systems.” 1973. in proc. of ins vol. electric engineers, vol. 120, pp. 704-706. [19] s. fryze, et al., “elektrischen stromkreisen mit nichtsinusoidalformingem verfauf von strom und spannung.” elektrotechnische zeitschriji, no. 53, vol. 25, pp. 596-599, 1932. [20] n. l. kusters, w. j. m. moore, “on the definition of reactive power under nonsinusoidal conditions.” ieee trans. power apparatus systems, no. 99, vol. 5, pp. 1845-1854, 1980. [21] w. shepard, p. zakikhani, “power factor correction in nonsinusoidal systems by the use of capacitance”, journal of physics d: applied physics, no. 6, pp. 1850–1861, 1973. [22] m. w. depenbrock, e. t. g. blindleistung, fachtagung blindleistung. aachen, 1979. characterization of nonlinear loads in power distribution grid 175 [23] l. s. czarnecki, “powers in nonsinusoidal networks: their interpretation, analysis and measurement”, ieee trans. instrumental measurements, no. 39, vol. 2, pp. 340-345, 1990. [24] l. s. czarnecki, “physical reasons of currents rms value increase in power systems with nonsinusoidal voltage”, ieee trans. in power delivery, no. 8, vol. 1, pp. 437-447, 1993. [25] m. e. balci, m. h. hocaoglu, “quantitative comparison of power decompositions”, electric power systems research, no. 78, pp. 318-329, 2008. [26] -,“ni pxi-7813r r series digital rio with virtex-ii 3m gate fpga.” national instruments. [27] -, “ni 9225 operating instructions and specifications.” national instruments. [28] -, “ni 9227 operating instructions and specifications”, national instruments. [29] c. jarvis, c., k. kinsella, p. timpanaro, “phar lap ets™ – an industrial-strength rtos white paper.” [30] national instruments: “labview real-time.” national instruments web page. [url] http://sine.ni.com/ nips/cds/view/p/lang/en/nid/2381. [31] national instruments, “labview system design software.” [32] d. stevanović, p. petković, “smarter power meters reduce economic losses at utility grid”, facta universitatis, series: electronics and energetics, vol. 28, no 3, pp. 407-421, september 2015. [33] s. puzović, b. m. koprivica, a. milovanović, m. đekić, “analysis of measurement error in direct and transformer-operated measurement systems for electric energy and maximum power measurement”, facta universitatis, series: electronics and energetics, vol. 27, no. 3, pp. 389-398, september 2014. [34] m. etezadi-amoli, t. sr. florence, “power factor and harmonic distortion characteristics of energy efficient lamps”, ieee transactions on power delivery, no. 4, pp. 1965–1969, 1989. http://sine.ni.com/nips/cds/view/p/lang/en/nid/2381 http://sine.ni.com/nips/cds/view/p/lang/en/nid/2381 instruction facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 509 541 doi: 10.2298/fuee1604509p p-channel mosfet as a sensor and dosimeter of ionizing radiation  milić m. pejović university of niš, faculty of elecronic engineering, niš, serbia abstract. this paper presents a study of mosfets as a sensor and dosimeter of ionizing radiation. the electrical signal used as a dosimetric parameter is the threshold voltage. the functionality of these components is based on radiation-induced ionization in sio2, which results in increase of positive charge trapped in the sio2 and interface traps at si sio2, leads to change in threshold voltage. the first part of the paper deals with analysis of defect precursors created by ionizing radiation, responsible for creation of fixed and switching traps, as well as most important techniques for their separation. afterwards, the results for sensitive p-channel mosfets (radfets) are presented, following with results for commercially available mosfets applications as a sensors of ionizing radiation. key words: fixed traps, fading, mosfet, radfet, switching traps, threshold voltage shift 1. introduction the attention of today’s research on the impact of ionizing radiation on mosfets is directed in two ways. the first one is the production on mosfets with the highest possible resistance to ionizing radiation (radiation hardness), while the other is toward to ionizing radiation dosimeters production. the first report on the use p-channel mosfet as integrating radiation dosimeter was published in 1970 [1] and this idea was verified by results published in 1974 [2]. further investigations lead to the manufacture of radiation sensitive p-channel mosfets, also known as radiation sensitive field effect transistor (radfet) or pmos dosimeter [3]. radfet has been shown to be suitable for dose measurements in various applications, such as diagnostic radiology and radiotherapy [4][8], space radiation monitoring [9]-[12], irradiation of food plants [13] and in personal dosimetry [14], [15]. the radfet radiation-sensitive region, the oxide film layer under the al-gate is typically 1m  200m  200m, i.e., the sensing volume is much smaller than competing integral dose measuring devices as the ionizing chamber or thermoluminescent dosimeter, implying that it can also be used in vivo dosimetry [16], [17]. this property of the radfet received march 22, 2016 corresponding author: milić m. pejović universiy of niš, faculy of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: milic.pejovic@elfak.ni.ac.rs) 510 m. pejović also makes it attractive for measurement in the gradient radiation field where the gradient mostly depends on a single space coordinate, like resolving dose of x-ray microbeams or depth dose distribution [18]. the advantages of radfets include immediate, nondestructive dosimetric information readout, real time or delayed reading, possible integration with other sensors and/or electronics, wide dose range, accuracy and competitive price [19], [20]. the application of radfets for dosimetry is hadron therapy, which is one of the promising radiation modalities in radiotherapy, another field where it is possible to explore their advantages. hadron therapy includes, fast neutron therapy, proton therapy, heavy ion therapy and boron-neutron capture therapy. it is shown [21] that radfets are less sensitive to neutron radiation than the photon or charge particles. on the other hand, a disadvantage of radfets is the need for separate calibration in the fields of different modalities and energy. moreover, radfets have a certain range of the total accumulated dose, which depends on the dosimeter type and sensitivity. once the upper limit of linearity is achieved, the radfets need to be replaced. however, recent studies have shown that such radfets can be recovered for reuse by storing at room or elevated temperature for a sufficient time [22], [23] or by annealing with current [24], [25]. the dosimetry of ionizing radiation using radiation sensitive mosfets is based on converting the threshold voltage shift vt into radiation dose d. this shift originates in the radiation-induced electron-hole pairs in the gate oxide layer of the transistor which lead to increase in the density of interface traps and build-up or neutralization of positive trapped charge. the sensitivity of radfets can be adjusted, which makes them suitable for various applications. for example, sensitivity can be tuned using different gate oxide layer thickness [26], [27], or in some cases by stacking transistors [14], [15]. the sensitivity can also be tuned by applying positive bias on the gate during irradiation [28], [29]. 2. the defects precursors created by ionizing radiation ionizing radiation leads to formation of large number of defects in sio2 and at sio2 si interface, which are responsible for mosfets threshold voltage shift. the defects which make significant impact to devices performance will be discussed further. 2.1. photon induced ionization during gamma or x-ray irradiation photons interact with the electrons in the sio2 molecules releasing secondary electrons and holes, i.e., photons break sio  o and sio  sio covalent bonds in the oxide [30] (the index o is used to denote silicon atom in the oxide). the released electrons (so called “secondary electrons”) which are highly energetic, may be recombined by holes at the place of production, or may escape recombination. the secondary electrons that escape recombination with holes travel some distance until they leave the oxide, losing their kinetic energy through the collisions with the bonded electrons in the sio  o and sio  sio covalent bonds in the oxide, releasing more secondary electrons (the latter bond represents an oxygen vacancy). p-channel mosfet as a sensor and dosimeter of ionizing radiation 511 each secondary electron, before it has left the oxide or been recombined by the hole, can break a lot of covalent bonds in the oxide producing a lot of new secondary highly energetic electrons, since its energy is usually much higher than an impact ionizing process energy (energy of 18 ev is necessary for the creation of one electron-hole pair [30], i.e., for the molecule ionization). it is obvious that the secondary electrons play a more important role in bond breaking than highly energetic photons, as a consequence of the difference in their effective masses, i.e., in their effective cross sections. the electrons leaving the production place escape the oxide very fast (for several picoseconds), but the holes remain in the oxide. the holes released in the oxide bulk are usually only temporary, but not permanently trapped at the place of production, since there are no energetically deeper centers in the oxide bulk. the holes move toward one of the interface (sio2-si or sio2-gate), depending on the oxide electric field direction, where they have been trapped at energetically deeper trap hole centers [31], [32]. moreover, even in the zero gate voltage case, the electrical potential due to a work function difference between gate and substrate is high enough for partial or complete moving towards an interface. 2.2. the defects created by secondary electrons in impact ionization a secondary electrons passing through oxide bulk, break covalent bonds in the oxide by the impact ionization and create  sio  o + sio  complex, where  denotes the three sio  o bonds (o3  sio  o) and  denotes the unpaired electron. the formed  sio  o + sio  complex is energetically very shallow, representing the temporary hole centre (the trapped holes can easily leave it [33]). the strained silicon-oxygen bond  sio  o  sio  mainly distributed near the interfaces can also be easily broken by the passing secondary electrons, usually created non-bridgingoxygen (nbo) centre,  sio  o  , and positively charged e' center,  osi [34] known as a e's center [35]. a nbo centre is an amphoteric defect that could be more easily negatively charged than positively by trapping an electron. the nbo as an energetically deeper centre is the main precursor of the traps (defects) in the oxide bulk and the interface regions. a secondary electron passing through the oxide can also collide with an electron in the strained oxygen vacancy bond  sio  sio , which is a precursor of a e' centre (  osi ) [36], breaking this bond and knocking out an electron. the oxygen vacancy bonds are mainly distributed in the vicinity of the interfaces. the trapped charge can be positive (oxide trapped holes) and negative (oxide trapped electrons) and the former is more important, since the hole trapping centers more numerous including e's, e' and nbo centers, compared with one electron trap centre (nbo). the holes and electrons trapped near the si – sio2 interface have the biggest effect on mosfet characteristics, since they have the strongest influence on the channel carriers. 2.3. defects created in sio2 by hole transport the holes trapped at  osi centers formed from oxygen vacancies and strained silicon-oxygen bonds are energetically deep and steady, at which the holes can remain for longer time period, i.e. they can be hardly filled by electrons than some shallowly trapped holes. these centers exist near both interfaces, especially near the si – sio2 interface. the 512 m. pejović holes created and trapped at the bulk defects, representing energetically shallow centers, are forced to move towards one of the interfaces under the electric field, where they are trapped at deeper traps, since there a lot of oxygen vacancies, as well as a lot of strained silicon-oxygen bonds near the interfaces, grouping all positive trapped charge there. the holes leave the energetically shallow centers in the oxide spontaneously and transporting to the interface (fig. 1(a)) by hopping process using either shallow centers in the oxide (fig. 1(b)); the holes “hop” from one to another center or centers in the oxide valence band (fig. 1(c)) [31], [37]. fig. 1 displays the hole transport in the space for the positive gate bias (a) and the energetic diagram for the possible mechanisms of this space process (b) and (c). fig. 1 space diagram: (a) hole transport through the gate oxide layer in the case of positive gate bias. “x” represents unbroken bonds and “o” broken bonds (trapped holes at shallow traps), respectively, and “ ” represents the hole trap precursors near the interface (precursors of a deep trap). energetic diagram: the hole transport (b) by tunneling between to localized traps and (c) by the oxide valence band. fig. 2 shows the possible hole (electron) tunneling between adjacent centers: a shallow centre and deep centre. when there is no gate bias (fig. 2 (a)) the holes (electrons) tunneling between these centers, is not possible. when the transistor is positively biased (fig. 2 (b)), the bonded electron can tunnel from the deep centre to the shallow centre. it represents the hole tunneling from shallow to deep centers, being permanently trapped at the deep center. the electron, which is now in the shallow centre, can easily tunnel from this shallow centre to the next adjusted shallow centre, enabling the hole transport towards the interface [31]. p-channel mosfet as a sensor and dosimeter of ionizing radiation 513 fig. 2 the electron tunneling between adjacent centers: (a) shallow centre and (b) deep centre. moving throughout the oxide, the holes react with the hydrogen defect hsio  and ohsio  finally create e's, e' , nbo centers, hydrogen ions h and hydrogen atoms oh . h ions and oh atoms were important for defect creation at sio2-si interface (see the next subsection). when the holes reach the interface, they can break both the strained oxygen vacancy bonds  oo sisi , forming e' centers [34] and the strained silicon-oxygen bonds  oo siosi , created the e's and nbo centers [31]. these centers represent energetically deeper hole and electron trapping centers, respectively. it should be noted that the energetic levels of the defects created after the holes at e's, and e' centers and electrons at nbo centre, respectively, have been trapped can be various. the chemically same defects show different behaviors depending on the whole bond structure: the angles and distances between the surrounding atoms [38]-[43]. 2.4. defects created at sio2 si interface the defects at the sio2-si interface known as true interface traps represent an amphoteric defect si3  si  s (index s is used to denote silicon atom in substrate): a silicon atom  si  s at sio2-si interface back bonded to three silicon atoms from the substrate  sis usually denoted as  si  s or si  . they can directly be created by incident photons passing to the substrate or the gate [44], [45] but this amount can be neglected. interface traps are mainly created by trapped holes (h + model) [46]-[49] and by hydrogen released in the oxide (hydrogen-released species model– h model) [50]-[52]. the h + model proposes that a hole trapped near the sio2-si interface created interface trap, suggesting that an 514 m. pejović electron-hole recombination mechanism is responsible [47]. namely, when holes are trapped near the interface and electrons are subsequently injected from substrate, recombination occurs. from the energy released by this electron-hole recombination the interface state may be created. the h model proposes that h + ions released in the oxide by trapped holes drift towards sio2-si interact with  sio  h and  sio  oh defects, drifting toward the sio2-si interface under the positive electric field. when the h + ion arrives at the interface, it picks up an electron from the substrate, breaking a highly reactive hydrogen atom h o [53]. also, according to the h model the hydrogen atoms oh released in reaction holes with  sio  h and  sio  oh defects and diffuse towards the sio2-si interface under the existing concentration gradient. these atoms react without an energy barrier at the interface producing interface trap in interaction with interface trap precursors  sis  h and  sis  oh [54]-[56]. interaction between h o atoms with  sis  h and  sis  oh precursors, beside creation of interface traps in interaction with interface trap precursors, leads to the creation of h2 and h2o molecules, respectively [31], [53]. h2 molecules diffuse towards the bulk of oxide where it is cracked at cc + centers [57]. this cracking process ensured the continuous source of h + ions, which drift towards the interface to form interface traps [58]. 2.5. classification of defects according to their influence on i-v characteristics the above mentioned defects can be divided to fixed traps (ft) and switching traps (st). ft represents traps in the oxide that do not have an ability to exchange the charge with the channel (substrate) within the transfer/subthreshold characteristic measurement time frame [59]. ft could be either negatively or positively charged, and they attract or repulse the channel carrier by the coulomb force, depending on the charge sign of both their charge and channel carrier charge. st represent the traps created near and at sio2-si interface and they do capture (communicate with) the carrier from the channel within the transfer/subthreshold characteristic measurement time frame [59]. the st created in the oxide near sio2-si interface are called slow switching traps (sst), but the st created at the interface are called fast switching traps (fst) also called true interface traps. the sst located in the oxide, closed to the sio2-si interface are also known slow states (ss) [60], anomalous positive charge (apc) [61], [62], switching oxide traps (sot) [63] and border traps [64]. it was emphasized that the influence of ft and st on the transistor subthreshold characteristics is manifested through the parallel shift and its slope variation, respectively. ft are usually deeper in the oxide, and during the long time post-irradiation annealing they can only be permanently recovered or temporally compensated (as in the case of switching gate bias experiments). it is emphasized that fst are amphoteric, and each of them contributes to two states within the silicon band gap (an acceptor and a donor) which could be randomly distributed inside it. 3. transistor characterization there are several techniques for ft and st separation [65]. most commonly used techniques are subthreshold midgap and charge pumping technique. their basic principle will be presented. p-channel mosfet as a sensor and dosimeter of ionizing radiation 515 3.1. subthreshold midgap technique fig. 3 subthreshold characteristics of radfets with 100 nm thick gate oxide manufactured by tyndall national institute, cork, ireland: (0) before gamma-ray irradiation and (1) after irradiation to 500 gy. the midgap-subthreshold (mg) technique [59] for determination of ft and st densities is based on analysis of mosfets subthreshold characteristics. namely, the influence of ft and st on the transistor subthreshold characteristics in saturation is in their parallel shifts and their slope changes, respectively. the first step is linear regression of the linear regions of subthreshold characteristics (fig. 3). the linear regression gives a straight line nvmi gd )log( . the next step in the procedure is the calculation of the midgap current before irradiation, img0 and after irradiation img. the calculation of the midgap current is performed using the subthreshold-current equation for a transistor in saturation [66]: )exp()( 2 2 2 ,0 s sda i dx s d kt q q kt qn ktn lc i     , (1) where 0 /x effw c l  and 2 ,/d s a dl kt q n is the debye length. in this equation c0x is the oxide capacitance per unit area, k is the boltzmann’s constant, q is the absolute value of electron charge, t is the absolute temperature, ni is the intrinsic carrier concentration, na,d is the doping concentration, s is the silicon permittivity, s is the surface potential,  is the carriers mobility, w is the channel width and leff is the effective channel length. regardless of the distribution within the substrate energy gap, interface traps are electrically neutral (total charge equals zero) when surface potential s is equal to fermi’s potential f and that is the case when fermi’s level is in the middle of the semiconductor’s energy gap. in that case, the shift between two subthreshold characteristics towards the vg-axis is a consequence of the charge of ft only, and the gate voltage which 516 m. pejović corresponds to these surface potential is denoted as vmg (midgap voltage) and it can be obtained as abscissa of the (vmg, img) point at subthreshold characteristics (fig. 3). using the equation log(id) = m  vg + n, obtained by the linear fit of subthreshold characteristic, the vmg, i.e., vg that corresponds to id = img could be found as ./])[log( mniv mgmg  using this procedure, vmg0 and vmg are found. in fig. 3 a region used for the linear fit is shown, and the straight lines obtained by the linear fits of subthreshold characteristics are extended up to corresponding midgap current img. the component of threshold voltage shift due to ft, ftv is 0mgmgmgft vvvv  , (2) where vmg0 and vmg are midgap voltages before irradiation and after irradiation, respectively. the component of threshold voltage shift due to st, vst, is 000 )()( ssmgtmgtst vvvvvvv  , (3) where vt0 and vt are transistors threshold voltages before irradiation and after irradiation, respectively and threshold voltage shift is 0ttt vvv  . vt0 and vt are determined from the transfer characteristics in saturation as the intersection between vg-axis and extrapolated linear region of )( gd vfi  curves that are modeled by the following equation [66]: 20 )( 2 tg eff x d vv l wc i    . (4) the total value of threshold voltage shift, tv can be expressed as [67]: stftt vvv  , (5) st x ft x t n c q n c q v  00 , (6) where q is the absolute value of electron charge nft is the areal density of ft and nst is the areal density of st. signs “+” and “-“ are for p-channel and n-channel mosfet, respectively. as it can be seen from exp. (6), both the ft and st contribute to the threshold voltage shift in p-channel mosfet in the same direction. also, so called “rebound effect” [30] is absent in p-channel mosfets: this phenomenon is due to competitive effects to the positive charge in the oxide and negative interface traps generated in n-channel mosfets leading to a positive or negative vt values depending on the relatively values of nft and nst. this is a reason that more commonly p-channel mosfets are used as sensor or dosimeter of ionizing radiation. it is emphasized that nft could contain a small amount of sst that are located deeper in the oxide, since there is not enough time for the carriers from the channel to reach them during measurement frames. 3.2. charge pumping technique as opposed to the mg technique, the charge-pumping (cp) technique does not give changes in charge densities in the positive oxide trapped charge and interface traps, but is p-channel mosfet as a sensor and dosimeter of ionizing radiation 517 used solely to determine interface traps density while the positive oxide trapped charge can be subsequently determined on the basis of the expression (6) under the condition that the change in threshold voltage known [68]-[70]. fig. 4 shematic diagram of charge pumping measurement. the charge-pumping effect can be explained on the basis of the scheme in fig. 4 [69]. the source and the drain of the transistor are short-circuited and p-n junction of source and drain with the substrate are inversely polarized with vr voltage. in the absence of signal at the gate, under the influence of inverted polarization at the junction source-substrate and drain-substrate, the inverted saturation current of these connections will flow. when a train of rectangular pulses of sufficiently high amplitude is applied to gate (with pulse generator), a change of current direction in the substrate occurs. the intensity of that current is proportional with the pulse frequency, and “pumping” of the same amount of electric charge towards the substrate. as current cannot flow through oxide, the electric charge in the substrate go through p-n junction of source and drain. in this way, in the case of n-channel mosfets, a channel is formed under the gate in positive pulse half-period, whereby electrons are captured on interface traps. during the negative half-period, when the channel area turns into the state of accumulation, mobile electrons from the channel are returned to the source and drain, and the captured electrons are recombined with holes from the accumulated layer, thereby generating cp current icp, whose maximum value icp,max is expressed by[70] edfqadafqi itgsitgcp  2 max, , (7) where ag is the area under the gate active in charge pumping and f is the pulse frequency and s = qe is the total sweep of the surface potential that corresponds to the e. in order to avoid recombination with channel electrons, it is necessary to ensure their return to the source and drain before overflow of cavities from the substrate occurs, which is accomplished by using reverse polarization of p-n junction or using a train of trapezoid pulses or triangular pulses with sufficient times for rise of time tr and fall time tf pulse. however, part of the electrons whose capture is shallowest, are in the meantime thermally emitted into conductive band of the substrate, reducing the width of interface traps energy range measure by the cp technique, so that cp current is generated by interface traps within the range [70] 518 m. pejović )ln(2 fr g fbt pnith tt v vv nvkte    (8) which is 0.5 ev from the middle of the forbidden band. in the expression (8) vth is thermal velocity, n and p are cross section surface of carrier captures, ni is self-concentration of carriers in the semiconductor and vg is pulse height. fig. 5 elliot-tipe cp curves of radfets with a 100 nm thick gate oxide manufactured by tyndall national institute, cork, ireland: (0) before gammaray irradiation and (1) after irradiation to 500 gy. the absolute value of interface traps density nit can be calculated using equation (7) and edn itit  : faq i n g cp it   max . (9) the change in areal density of interface traps is 0)()( ititit ntncpn  , where nit(t) is the absolute value of interface trap density after irradiation time t and nit0 is the absolute value of interface trap density before irradiation. icpmax (fig. 5) is directly proportional to the pulse frequency and a small-size transistor with usual state density needs a frequency of at least several khz to enable the charge-pumping current level reach the order of magnitude of picoampers. due to this, cp measuring is most often conducted with frequencies in the range between 100 khz and 1 mhz, whereby only fst (true interface traps) are registered (in some frequencies, cp is also contributed by of sst which also captures electrons from the channel [71]). as the cp technique required a separate outlet for the substrate, it could be concluded that it is not applicable for power vdmosfets, in which the p-bulk is technologically connected to the source. however the cp technique for these devices is applicable in a somewhat altered form (see [72], [73] for more details). p-channel mosfet as a sensor and dosimeter of ionizing radiation 519 the density nit found by cp technique using expression (9) is, in fact, also the switching trap density nst (cp)  nit (cp). however, a very useful feature of the cp technique is that, as a much fast technique, it can sense only the fst and eventually just the fastest among sst. hence, the density of st measured by the cp technique is indicative of true interface trap (fst) behavior, i.e., nst (cp) = nfst. the simultaneous use of both techniques has a great advantage. for instance, the difference in the behavior of nst (mg) and nst (cp) is a consequence of sst [74], since nst (mg) = nsst + nfst and nst (cp) = nfst. 3.3. single point threshold voltage shift measurements fig. 6 threshold voltage measurement configuration based on constant current. as mentioned above, one of the methods for threshold voltage determination is based on transfer characteristics in saturation as the intersection between vg-axis and extrapolated linear region of )( gd vfi  curves that are modeled by equation (4). the single point threshold voltage measurement requires measuring the drain-source voltage while the transistor remain biased by a constant drain current and the gate and drain terminals are short-circuited (fig. 6) [75]. under this configuration, the source-drain voltage shift is taken as vt. the monitoring of the drain-source voltage can be done continuously during irradiation. most of the commercial dosimetry systems based on mosfets measure increments of the drain-source voltage at constant drain current [76]-[78]. usually, in the order to minimize the thermal drift, the drain current selected is the zero temperature coefficient current, iztc, for which the thermal dependence of the drain-source voltage cancels out. when i  vout are measured at different temperatures, all of them intersect in the same point. in fig. 7 presented the readout current ranging from 1 to 150 a and the vout voltage (vsd) were measured at temperature ranges from 25 to 100 o c for radfets with 400 nm thick gate oxide manufactured by tyndall national institute, cork, ireland. as it can be seen, all of these curves intersected in the vicinity of 12 a. it could be concluded that a selection of this current would minimize the effect of the temperature on the threshold voltage. 520 m. pejović fig. 7 single-point characteristics of radfets with a 400 nm thick gate oxide layer manufactured by tyndall national institute, cork, ireland at various temperatures. 4. radfet as a sensor and dosimeter of ionizing radiation as it was stated before, the first results in mosfets application in dosimetry were published by andrew holmse-siedle in 1974. [2]. basic principles in application of these devices as sensors and dosimeters of ionizing radiation were presented. several research groups which dealt with similar problems appeared afterwards. those are canadian research group [79], usa navy research group [80], [81], french research group [82], [83], netherlands [84], [85], usa [86], [87] and serbia [88]-[90]. large number of companies and institutes throughout the world are engaged in production of radiation sensitive mosfets. among them is tyndall national institute, cork, ireland. this institute produces radfets with gate oxide thicknesses of 100 nm, 400 nm and 1 m. some of the results related to these components will be presented in this paper regarding several important dosimetric parameters. 4.1. sensitivity of radfets irradiated by gamma rays 4.1.1. influence of gate bias fig. 8 shows the threshold voltage shift vt of radfets with 100 nm gate oxide layer thickness for gamma-ray radiation dose d in the range from 100 to 500 gy without and with gate bias during irradiation virr = 5v [91]. it can be seen that for irradiation without gate bias in the range from 0 to 500 gy, vt increases for about 0.4 v. for the same dose interval, for gate bias 5 v, vt increased for about 2.3 v. the sensitivity is defined as vt / d, so it can be concluded that the gate bias virr = 5v significantly increases the sensitivity of the radfet. p-channel mosfet as a sensor and dosimeter of ionizing radiation 521 fig. 8 threshold voltage shift vt as a function of radiation dose d, for 100 nm gate oxide thick layer radfets, without and with gate bias during irradiation of virr = 5v. in order to determine the contribution of ft and st to total vt during irradiation, their densities were determined using mg and cp techniques, and results are presented in figs. 9 and 10, respectively. it can be seen that the increase of radiation dose d lead to increase in both nft and nst and that these increase are smaller for radfets previously irradiated without gate bias. also, for the same values of d and virr the increase of ft density is larger than the increase of st density. the st density nst (mg) determined using mg technique is bigger than the st density nst (cp) determined using cp technique. this is due to the fact that mg technique determines both sst and fst, while cp technique determines only fst (true interface traps). from figs. 9 and 10, it can be seen that ft density is for about order of magnitude larger than st density obtained using the mg technique. these results have shown that ft play a crucial role in threshold voltage shift. fig. 9 the change in areal density of fixed traps nft as a function of radiation dose d, for 100 nm gate oxide thick layer radfets, without and with gate bias during irradiation virr = 5v. 522 m. pejović fig. 10 the change in areal density of switching traps as a function of radiation dose d, for 100 nm gate oxide thick layer radfets, obtained by mg and cp technique without and with gate bias of virr = 5v. fig. 11 shows vt = f (d) dependence of a radfets with a gate oxide layer thickness of 100 nm for gamma-ray radiation dose in the range from 0 to 50 g [92]. during the irradiations the gate biases virr were 0, 1.25, 2.5, 3.75 and 5 v. the threshold voltage shift for the same dose increases in gate bias increase. the radiation dose up to 50 gy did not degrade the linearity of the radfets significantly, which is significant for practical applications of these devices. fig. 11 threshold voltage shift vt as a function of radiation dose d for radfets with a 100 nm thick gate oxide layer for various gate bias virr during irradiation. in general, one can express the dependence of vt on d as: ndav  , (10) where a is a constant and n is the degree of linearity. ideally, n =1, and the dependence is linear with the sensitivity s = vt / d. correlation coefficients for linear fits for all values of virr (fig. 11) are r 2 = 0.999. having that r 2 are very close to one, it can be assumed that there is a linear dependence between vt and d and that the sensitivity of radfets for a given values of irrv is the same in the range from 0 to 50 gy. p-channel mosfet as a sensor and dosimeter of ionizing radiation 523 fig. 12 sensitivity s as a function of gate bias virr during irradiation for radfets with a 100 nm thick gate oxide layer for radiation dose of 50 gy. fig. 12 shows the sensitivity s as a function of gate bias virr during gamma-ray radiation dose of 50 gy for the radfets with 100 nm gate oxide thickness [92]. the symbols stand for experimental data while the solid lines represent fits, which are exponential. fig. 13 shows vt = f(d) of radfets with a 400 nm gate oxide layer thickness for gamma-radiation dose in range from 0 to 5 gy and virr = 0v and virr = 5v [78], [93]. expression (10) very well describes experimental data because the correlation coefficient is r 2 = 0.999. these results, as well as those presented in figs. 8 and 12, show that the increase in gate bias during irradiation lead to the increase in vt value, i.e. the sensitivity is increased as well. fig. 13 threshold voltage shift vt as a function of radiation dose d for radfets with a 400 nm thick gate oxide layer in the case without gate bias and gate bias of virr = 5v. 4.1.2. influence of gate oxide layer thickness fig. 14 shows the threshold voltage shift vt as a function of radiation dose d for radfets with gate oxide layer thicknesses of 100 nm, 400 nm and 1m. the gammaray irradiation of these devices was performed in the dose range from 0 to 50 gy, while the gate bias was virr = 5v [92]. it can be seen that the increase in gate oxide layer 524 m. pejović thickness lead to significant increase in vt for the same radiation dose. it is mainly due to the increase in ft density [94]. experimental data fitting using expression (10) for n=1, gives the correlation coefficient value, for radfets whith 100 and 400 nm gate oxide thickness, r 2 = 0.999, what proves linear dependence between vt and d, i.e. the sensitivity is the same in considered dose range and this value is higher for 400 nm gate oxide later thickness. for 1 m gate oxide thickness radfets, correlation coefficient is r 2 = 0.976, so there is no linear dependence between vt and d, and hence the sensitivity is different for different values of radiation dose. fig. 14 threshold voltage shift vt as a function of radiation dose d for three values of gate oxide layer thickness. gate bias during irradiation was virr = 5v. vt = f(d) dependence for radfets with a gate oxide layer thicnesses of 400 nm and 1m is shown in fig. 15 [78]. irradiation of these devices was also performed with gamma-rays and gate bias during irradiation of virr = 5v but the dose range was from 0 to 5 gy. i was also shown that the sensitivity increases with gate oxide thickness and that here is linear dependence between vt and d (correlation coefficient r 2 = 0.999). fig. 15 threshold voltage shift vt as a function of radiation dose d for two values of gate oxide layer thickness. gate bias during irradiation was virr = 5v. p-channel mosfet as a sensor and dosimeter of ionizing radiation 525 4.1.3. photon energy influence on radfets sensitivity threshold voltage shift vt for radfets with 1 m gate oxide layer thickness, irradiated with gamma-rays which originates from 60 co and x-rays with energy of 140 kev for radiation dose in the range from 0 to 5 gy for virr = 0v and virr = 5v is presented in figs. 16 and 17, respectively [95]. it can be seen that vt increases in much higher in the case when radfets are irradiated with x-rays then in the case of gamma-rays. it is a consequence of different photon energies which lead to ionization of the oxide gate molecules. namely, x-rays photon energy of 140 kev leads to molecule ionization by both photoeffect and compton’s effect, while gamma-rays, which originate from 60 co with energies of 1.17 and 1.33 mev lead to molecules ionization only by compton’s effect [31]. since the probability for molecule ionization by photoeffect is significantly higher than compton’s effect, during x-ray irradiation a large number of ft and st are formed than during gamma-ray irradiation which directly causes the change in vt values. fig. 16 threshold voltage shift vt as a function of radiation dose of gamma and x-ray d for 1 m gate oxide thick layer radfets irradiated without gate bias. fig. 17 threshold voltage shift vt as a function of radiation dose of gamma and x-ray d, for 1 m gate oxide thick layer radfets irradiated with virr = 5v. 526 m. pejović fitting of experimental data for gamma radiation dose in the range from 0 to 5 gy (figs. 16 and 17) using the expr. (10) for n=1 gives correlation coefficient of r 2 = 0.998 for both virr = 0v and virr = 5v. having that the correlation coefficients are very close to one, it can be assumed that there is a linear dependence between vt and d, so that the sensitivity vt / d is the same in whole interval. correlation coefficients for the case when radfets are irradiated with x-rays (figs. 16 and 17) are 0.96 and 0.95 for virr = 0v and virr = 5v, respectively, so it is shown that there is no linear dependence between vt and d. fig 18 threshold voltage shift vt as a function of radiation dose d, for 1 m gate oxide thick layer radfets, for two value of energy of x-ray. gate bias during irradiation is virr = 5v. fig. 18 shows vt = f(d) dependence of radfets with 1 m gate oxide layer thikcness during x-ray irradiation with photons energies of 90 and 140 kev for gate bias virr = 5v [96]. it can be seen that lower photon energy leads to a greater change in vt for the same radiation dose. similar behavior is detected in tn-502 rdi mosfets (thomson and neilson electronic ltd, ottawa, canada) [97]. fig. 19 threshold voltage shift vt as a function of x-ray radiation dose d for radfets with a 400 nm thick gate oxide layer. radiation was performed without and with gate bias of virr = 5v. p-channel mosfet as a sensor and dosimeter of ionizing radiation 527 fig 20 threshold voltage shift vt as a function of x-ray radiation dose d for radfets with a 1m thick gate oxide layer. radiation was performed without and with gate bias of virr = 5v. figs. 19 and 20 show the threshold voltage shift for x-ray radiation dose in the range from 0 to 100 cgy for radfets with gate oxide layer thickness of 400 nm and 1 m, respectively. fig. 21 shows the same dependence for x-ray radiation dose in the range from 1 to 10 cgy for radfets with gate oxide layer thickness of 1 m [98]. these dependence are given for gate bias during irradiation virr = 0v and virr = 5v. as it can be seen, vt values are higher when the gate bias during irradiation was virr = 5v, compared with the case when it was virr = 0v. furthermore, vt is higher for radfets with large gate oxide layer thickness (figs. 19 and 20). results presented in fig. 21 show that vt values can be detected with good reliability even for radiation dose of 1 cgy. fig. 21 threshold voltage shift vt as a function of x-ray radiation dose d for radfets with a 1m thick gate oxide layer. radiation was performed without and with gate bias of virr = 5v. 528 m. pejović 4.2. irradiated radfets fading as a dosimeter a radfets must satisfied two fundamental dosimetric demands: a good compromise between sensitivity to irradiation and stability with time after irradiation. the stability means insignificant change in vt of an irradiate radfet at room temperature for a long period of time, i.e., dosimetric information should be saved for a long period. there are two important reasons for this: first, being the fact that the dose cannot always be acquired immediately after irradiation, but after a certain period of time; second, as by individual monitoring, the exact moment of irradiation is often unknown, and the radiation dose measurements are performed periodically. room temperature stability of irradiated radfet can be followed by calculating fading f, which can be calculated as [95]: 0 (0) ( ) (0) ( ) 100 [%] 100 [%] (0) (0) t t t t t t t v v t v v t f v v v         . (11) where vt0 is the pre irradiation threshold voltage, vt(0) is the threshold voltage immediately after irradiation, vt(t) is the threshold voltage after annealing time t and vt(0) is the threshold voltage shift immediately after irradiation. fig. 22 fading f at room temperature for 2000 h of radfets with a 400 nm thick gate oxide layer previously irradiated with gamma-ray radiation dose 5 gy. fig. 23 fading f at room temperature for 2000 h of radfets with a 400 nm thick gate oxide layer previously irradiated with gamma-ray radiation dose 50 gy. p-channel mosfet as a sensor and dosimeter of ionizing radiation 529 fading radfets with gate oxide layer thickness of 400 nm which were previously irradiated with 5 gy gamma-rays are shown in fig. 22. it can be seen that fading for the first 24 h annealing at room temperature is about 3.5% while for the annealing time from 24 h to 800 h it is increases for about 6%. during further annealing fading is insignificant. for the same type of radfets previously irradiated with 50 gy gamma-rays is shown in fig. 23. it can be seen that for the first 24 h annealing at room temperature fading is about 6% and its value slightly increases to 200 h annealing time. for annealing time longer than 200 h comes to a slight increase in fading, and therefore, is fading after 2000 h for about 2% higher than after 200 h. fig. 24 fading f at room temperature for 2000 h of radfets with a 400 nm thick gate oxide layer previously irradiated with x-ray radiation dose 100 cgy. fig. 25 fading f at room temperature for 28 d of radfets with a 1m thick gate oxide layer previously irradiated with x-ray radiation dose 100 cgy. fading results for radfets with gate oxide thickness of 400 nm and 1 m, at room temperature previously irradiated with x-rays up to 100 cgy, are presented in figs. 24 and 25, respectively [98]. in fig. 26 fading of radfets with gate oxide layer thickness of 1 m previously irradiated with x-rays up to 10 cgy is also presented [98]. fading of radfets with gate oxide layer thickness of 400 nm, which were irradiated with gate bias of 5 v, is 40% in the first 7 d, whereas those of radfets irradiated without gate 530 m. pejović bias during irradiation have 22% fading also in the first 7 d (fig. 24). for the time period between 7 and 28 d, fading of radfets irradiated with gate bias 5 v increased for about 3% whereas that of radfets irradiated without gate bias during irradiation fading had a nearly constant value. fading of 1m thick gate oxide layer radfets, which were irradiated up to 100 cgy with gate bias 5 v in the first 7 d was 14% (fig. 25), whereas for the time period between 7 and 28 d, it increases about 1%. radfets with the same gate oxide layer thickness, which were irradiated without gate bias the first 7 d, have a fading increase for about 1% and this value is kept up to 28 d. figs. 24 and 25 show that fading is lower when the gate oxide layer of radfets is thicker which in accordance with early study [10], [89], showed that fading decreases with the increase in gate oxide thickness. fig. 26 fading f at room temperature for 28 d of radfets with a 1m thick gate oxide layer previously irradiated with x-ray radiation dose 10 cgy. in radfets with gate oxide layer thickness of 1m irradiated up to 10 cgy, the highest fading occurs in the first 3 d and it is 15% for radfets irradiated without gate bias and 13% for radfets with 5 v gate bias during irradiation (fig. 26). moreover, in both case, fading from 3 to 28 d is smaller than 2%. fading of radfets is mainly a consequence of positive oxide trapped charge decrease. this decrease is a consequence of electrons tunneling from si into sio2; these electrons are captured at positive oxide trapped charge, which leads to their neutralization/ compensation, and thus instability of manifested threshold voltage shift [99]. 4.3. the possibility of radfets re-use many investigations have showed that radfets cannot be used for subsequent determination of ionizing radiation dose. namely, these dosimeters are only used to measure the maximum dose, which is determined by the type and sensitivity of radfet. when the maximum radiation dose is reached, these radfets should be replaced. the first results dealing with the possibility of re-use of these devices are given in ref. [10] for radiation dose 400 gy. later investigations for the same components are presented in [23], [100]. irradiation was performed with gamma-rays up to 35 gy, without gate bias and with gate bias virr = 2.5v and virr = 5v. fig. 27 shows the threshold voltage shift vt p-channel mosfet as a sensor and dosimeter of ionizing radiation 531 as a function of radiation dose d, for both the first and second irradiation with gate bias of virr = 5v. after the first irradiation, the radfets were annealed at room temperature for 5232 h without gate bias. after this, the annealing process was continued at 120 o c without gate bias for 432 h. the radfets were then irradiated under the same conditions. the values of vt during the first and second irradiation is very close. such results are in oposition with earlier results [10] where it was shown that values for vt during the first irradiation are higher than the values obtained during the second irradiation. fig. 27 threshold voltage shift vt as a function of radiation dose d of radfets with a 400 nm thick gate oxide layer for both the first and second irradiation with gate bias of virr = 5v. the first and second irradiation of radfets lead to approximately the same increase of nft (fig. 28) while the increase of nst (mg) is higher during the second irradiation (fig. 29). nfst (cp) is higher during the second irradiation (fig. 30). on the basis of the results presented in figs. 28, 29 and 30 it can be seen that the major contribution to vt increase during the first and second irradiation originates from ft, which density is an order magnitude higher than st(mg) density for a radiation dose of 35 gy. fig. 28 areal density of fixed traps nft as a function of radiation dose d of radfets with a 400 nm thick gate oxide layer for both the first and second irradiation with gate bias of virr = 5v. 532 m. pejović fig. 29 areal density of switching traps nst (mg) as a function of radiation dose d of radfets with a 400 nm thick gate oxide layer for both the first and second irradiation with gate bias of virr = 5v. fig. 30 areal density of switching traps nst (cp) as a function of radiation dose d of radfets with a 400 nm thick gate oxide layer for both the first and second irradiation with gate bias of virr = 5v. 5. low-cost commercial p-channel mosfet as a radiation sensor in recent years, many investigations are driven toward applications of low-cost commercial p-channel mosfets as a radiation sensors in radiotherapy [101]. paper [102] presents results of some most important dosimetric parameters (sensitivity, linearity, reproductibility and angular dependence) for power p-channel mosfets 3n163. these transistors were irradiated by gamma rays from 60 co up to 55 gy. these devices were irradiated without gate bias. fig 31 shows the threshold voltage shift vt versus radiation dose d for 15 devices. as expected, the vt values increases when the radiation dose in mosfets increases. the data show excellent linearity with a mean sensitivity value of 29.2 mv/gy and resonable good reproducibility up to a total dose of 58 gy (which is around to the total dose used in typical radiotherapy treatments). moreover, the angular and dose-rate dependencies are similar to those of other, more specialised p-channel mosfets (radfets). authors of this paper concluded that power p-channel mosfet as a sensor and dosimeter of ionizing radiation 533 p-channel mosfet 3n163 would be an excellent candidate as a sensor of a low-cost system capable of measuring the gamma radiation dose. this radiation sensor could be placed on patient without the need for wires, and the threshold voltage shift, which is indicative of the radiation dose could be measured after the completion of each irradiation session with a resonable degree of confidance. fig. 31 threshold voltage shift vt as a function of radiation dose d for fifteen mosfets 3n163 irradiated with gamma-rays without gate bias. martines-garicia et al [103] investigatted the possibility of vertical diffusion mos, also called double-diffused mos transistor, or simply dmos, as a sensor of ionizing radiation. those components were dmos bs250f, zvp3306 and zvp4525, manufacured by diodes incorporated (plano, usa). the irradiation was performed by an electron beam of 6 mev energy without gate bias. the same auhors invesigated the behavior of p-channel mos transistors from integrated circuis cd4007 (texas instruments, dallas, usa and nxp semiconductors, eindhoven, netherlands) under 6 mev energy electron beam. in fig. 32 the vt versus d is ploted for four simples of the zvp3306 dmos transistors. the results for the other models dmos transistors are similar. as it can be seen there is a linear dependence betveen vt and d to radiation dose of 25 gy. values of sensitivity for bs250f, zvp4525 and zvp3306 are 3.1, 3.4 and 3.7 mv/gy, respectively. fig. 32 threshold voltage shift vt as a function of radiation dose d for four dmod zvp3306 irradiated with 6 mev electrons without gate bias. 534 m. pejović it is shown [103] that p-channel mos transistors from integrating circuits cd4007 in unbiased configuration during irradiation showed the sensitivity 4.6 mv/gy with a very good linear behaviour of the threshold voltage shift versus radiation dose. as the thermal compensation may be applied this transistor may be considered as a promising candidate to use as dosimeter in intra-operative radiology. fig. 33 threshold voltage shift vt and sensitivity s as a function of radiation dose d for p-channel mos transistors from integrated circuits cd4007 irradiated with 6 mev electrons with gate bias virr = 0.6v. fig. 33 shows the vt = f(d) dependence when cd4007 manufactured by texas instruments irradiated with electron beam of 6 mev. during irradiation gate bias is 0.6 v. the data present a linear behaviour showing that p-chnnel transistors from this integrating circuit is suitable for electron beam dosimetry because the sensitivity is 7.4 mv/gy. sensitivity for cd4007 manufactured by nxp semiconductor for the same conditions is 8.9 mv/gy. fig. 34 threshold voltage shift vt as a function of radiation dose d for radfets and vdmosfets irf9520 irradiated without gate bias. p-channel mosfet as a sensor and dosimeter of ionizing radiation 535 fig. 35 threshold voltage shift vt as a function of radiation dose d for radfets and vdmosfets irf9520 irradiated with gate bias of virr = 10v. a comparative study of radfets manufactured by tyndall national institute, cork, ireland with 100 nm gate oxide layer thicknes and commercial p-channel power vdmosfets irf9520 manufactured by international rectifier sensitivity to gamma-ray irradiation in the dose range from 0 to 500 gy is given in paper [104]. figs. 34 and 35 show the dependence between vt and d for radfets and irf9520 in the case when they were irradiated without gate bias (virr = 0v) and with gate bias of virr = 10v, respectively. it can be seen that vt is higher for irf9520 then for radfet for the same radiation dose. the difference in vt is probably a concequence of different technological procedures during device fabrication. it is shown that linear dependence between vt and d valid only for devices with virr = 10v during irradiation (the value of corelation coefficient obtained by experimental data fiting using expression (10) is r 2 = 0.998). figs. 36 and 37 present the change in areal densities of ft, nft for radfet and irf9520 without gate bias and with gate bias virr = 10v during irradiation, respectively [104]. it can be seen that nft is larger in irf9520 then in radfet as well as that gate bias leads to the increase in vt for the same value of radiation dose for both types of transistors. fig. 36 the change in areal density of ft nft as a function of radiation dose d for radfets and vdmosfets ir9520 irradiated without gate bias. 536 m. pejović fig. 37 the change in areal density of ft nft as a function of radiation dose d for radfets and vdmosfets ir9520 irradiated with gate bias of virr = 10v. fig. 38 the change in areal density of st nst, determined using mg technique, as a function of radiation dose d for radfets and vdmosfets ir9520 irradiated without gate bias. fig. 39 the change in areal density of st nst, determined using mg technique, as a function of radiation dose d for radfets and vdmosfets ir9520 irradiated with gate bias of virr = 10v. p-channel mosfet as a sensor and dosimeter of ionizing radiation 537 the change in areal densities of st, nst determined by mg technique for radfet and irf9520 without gate bias and with virr = 10v gate bias are presented in figs. 38 and 39, respectively [104]. it can be seen that nst is smaller in irf9520 than in radfet. however, nft is considerably larger than nst in both types of devices. on the basis of these data it can be concluded that nft predominantly contributes to vt increase during irradiation. fading of irradiation irf9520 and radfet up to 500 gy is calculated 24 h after irradiation using equat. (11). for this time the device were kept at room temperature without gate bias. it was shown that the fading is higher in irf9520 than in radfets and it is smaller for devices previously irradiated with gate bias virr = 10v. 6. conclusion intensive investigations of radiation sensitive mosfets (radfets) have been performed in order to investigate their application in dosimetry. their relatively small volumen give them advantage over some other dosimetric systems, which is particulary important in in-vivo dosimetry as well as in control of gradient radiation fielld of x-rays. radfets are most commonly used for photon and ionizing radiation charged particles detection. it can be also used for neutron detection, but their sensitivity is much smaller than for photons and charged particles. their sensitivity can be increased by gate bias application during irradiation and by increasing the gate oxide layer thickness. the sensitivity increases with the decrease in ionizing radiation photon energy. it is required for these components to achieve minimal variation in threshold voltage shift after irradiation at room temperature, i.e. it is neccessary to preserve the dosimetric information for a long period of time. considered radfets are sensitive sensors of gamma and xrays, because they can register doses below 1 cgy. unfortinatelly, their major disadvantage is large fading immidiatelly after irradiation. investigations in the past few years have shown that some commercially available p-channel mosfets can be very efficiently applied as gamma and x-ray sensors as well as electrons sensors with energyes of seweral mev. those are low power p-channal mosfets 3n163, dmos bs250f, zvp3306, zvp4525 and power vdmosfets irf9520. furthermore, p-channel mos transistors, for example from cd4007, can be used as sensors of ionizing radiation. acknowledgement: the paper is a part of the research done within the project supported by the ministry of education, science and technological development of the republic of serbia under project no. 32026. references [1] w. poch and a.g. holmes-siedle, „the mosimetera new instrument for measuring radiation dose“, rca eng., vol. 16, pp. 56-59, 1970. [2] a. g. holmes-siedle, „the space charge dosimeter-general principles of a new method of radiation dosimetry“, nucl. instrm. methods, vol. 121, pp. 169-179, 1974. [3] l. adams and a. holmes-siedle, „the development of mos dosimetry unit for use in space“, ieee trans. nucl. sci., vol. 18, pp. 1607-1612, 1978. [4] r. r. price, c. benson an k. rodgers, „development of radfet linear array for intracavitary in vivo dosimetry in external radiotherapy and brachyterapy“, ieee tran. nucl. sci., vol. 51, pp. 1420-1426, 2004. 538 m. pejović [5] r. ramasechum, k.s. kulli, t.j. zhang, b. norling, a. hallil and m. islam, „performance characteristics of a micro mosfet as an in vivo dosimeter in radiation therapy“, phys. med. biol., 49, pp. 4031-4048, 2004. [6] g. tarr, k. shortt, y. wang and i. thomson, „a sensitive temperature-compensated, zero-bias floating gate mosfet dosimeter“, ieee trans. nucl. sci., vol. 51, pp. 1277-1282, 2004. [7] m. c. lavallee, l. gingras and b. luc, „energy and interated dose dependence of mosfet dosimeter sensitivity for irradiation eneries between 30 kv and 60co“, med. phys., vol. 33, pp. 3683-3689, 2006. [8] r. kohuo, t. nishio, t. miyagishi, e. hirano, k. hotta, m. kowashima and t. ogino, „experimental evaualation of a mosfet dosimeter for proton dose measurements“, phys. med. biol., vol. 51, pp. 6077-6086, 2006. [9] a. holmes-siedle and l. adams, „radfets: a review of the use of metal-oxide silicon devices as integrating dosimeters“, rad. phys. chem., vol. 28, 224-235, 1986. [10] a. kelleher, n. mcdonnell, b. o'neill, w. lane, l. adams, „investigation into the re-use of pmos dosimeter“, ieee trans. nucl. sci., vol. 41, pp. 445-451, 1994. [11] l. z. scheick, p.j. mcnulty and d.r. roth, „dosimetry based on the erasure of floating gates in natural radiation environments“, ieee trans. nucl. sci., vol. 45, pp. 2681-2688, 1998. [12] k. kay, e. mullen, w. stapor, r. circle and p. mcdonald, „grres dosimetry results and comparison using the space radiation dosimeter and p-channel mos disieteter“, ieee tran. nucl. sci., vol. 39, pp. 1846-1850, 1992. [13] a. faigon, j. lipovetzky, e. redin and g. kruscenski, „expresion of measurement range of mos dosimeters using radiation induced charge neutralization“, ieee trans. nucl. sci., vol. 55, pp. 21412147, 2008. [14] b. o'connell, c. connely, c. mccarthy, j. doyle, w. lane and l. adams, „electrical performance and irradiation sensitivity of stacked pmos dosimeters under bulkbias control“, ieee trans. nucl. sci., vol. 45, pp. 2689-2694, 1988. [15] g. sarrabayrouse, buchdahl, v. poliscuk and s. siskos, „stacked-mos ionizing radiation dosimeters: potentials and limitations, radiat. phys. chem., vol. 71, pp. 737-739, 2004. [16] r.c. hughes, d. huffman, j.v. snelling, t.e. zipperian, a.j. ricoo and c.a. kelsey, „miniature radiation dosimeter for in vivo radiation measuremnts“, int. rad. oncol. biol. phys., vol. 14, pp. 963967, 1988. [17] d.j. gladstone, x.q. lu. j.l. humm, h.f. bowman and l.m. chin, „a miniature mosfet radiation probe“, med. phys., vol. 21, pp. 1721-1728, 1994. [18] g.i. kaplan, a.b. rosenfeld, b.j. allen, j.t. booth, m.g. carolan and a. holmes-siedle, „a special resolution by mosfet dosimetry of an x-ray microbeam“, med. phys., vol. 27, pp. 239-244, 2000. [19] g. sarabayrouse and v. polischuk, „mos ionizing radiation dosimeters: from low to high dose measurement“, radiat. phys. chem., vol. 61, pp. 511-513, 2001. [20] a. jaksić, g. ristić, m. pejović, a. mohammadzadeh, c. sudre and w. lane, „gamma-ray irradiation and post-irradation response of high dose range radfets“, ieee trans. nucl. sci., vol. 49, pp. pp. 1356-1363, 2002. [21] r. a. price, „towards and optimum design of a p-mos radiation detector for use in high-energy medical photon beams and neutron facilities: analysis of activation materials“, radiation protection dosimetry., vol. 115, pp. 386-390, 2005. [22] m. m. pejović, m.m. pejović, a.b. jakšić, k.dj. stanković and a.a. marković, “successive gamma-ray irradiation and corresponding post-irradiation annealing of pmos dosimeters”, nucl. technol. and radiat. protection, vol. 27, pp. 341-345, 2012. [23] m. m. pejović, m.m. pejović and a.b. jakšić, „contribution of fixed oxide traps to sensitivity of pmos dosimeters during gamma ray irradiation and annealing at room and elevated temperature”, sensors and actuators a, vol. 174, pp. 85-90, 2012. [24] s. alshaikh, m. carolan, m. petasecca, m. lerch and a.b. metealfe, „direct and pulsed current annealing of p-mosfet based dosimeter, the moskin“, australs phys. eng. sci. med., vol. 37, pp. 311-319, 2014. [25] g-wen luo, qi. z.-y. deng, a. rosenfeld and wx?, „investigated of a pulsed current annealing method in reusing mosfet dosimeters for in vivo imrt dosimetry“, med. phys., vol. 41, 0511710, 2014. [26] g. ristić, s. golubović and m. pejović, „pmos dosimeter with two-layer gate oxide operated at zero negative bias”, electr. lett., vol. 30, pp. 295-296, 1994. [27] g. ristić, a. jakšić, m. pejović, “pmos dosimetric transistors with two-layer gate oxide”, sensors and actuators a, vol. 63, pp. 129-134, 1997. p-channel mosfet as a sensor and dosimeter of ionizing radiation 539 [28] g. sarrabayrouse and f. gessinn, “thick oxide mos trnsistors for ionizing radiation dose measurement”, radioprotection, vol. 29, pp. 557-572, 1994. [29] a. haran, a. jakšić, n. rafaeli, a. elyahu, d. david and j. barak, ieee trans. nucl. sci., vol. 51, 2917-2921, 2004. [30] t. p. ma and p.v. dressendorfer, ionizing radiation effects in mos devices and circuits, new york: willey and sons, 1989. [31] g. s. ristić, “influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors”, j. phys. d: appl. phys., vol. 41, 023001 (19 pp), 2008. [32] m. pejović, p. osmokrović, m. pejović and k. stanković, “influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors”. in m. nenoi (ed), current topic in radiation research. intech. institute for new technologies, maastricht (nl), chapter 33, . oclc: 846871029, 2012. [33] c. t. sah, “origin of interface states and oxide charges generated by ionizing radiation”, ieee tran. nucl. sci., vol. 23, pp. 1563-1567, 1976. [34] d. l. griscom, “optical properties and structure of defects in silica glass”, j. ceram. soc. japan, vol. 99, pp. 923-941, 1991. [35] r. helms and e.h. poindexter, “the silicon-silicon-dioxide system: its microstructure and imperfections”, rep. prog. phys., vol. 57, pp. 791-852, 1994. [36] r. a. weeks, “paramagnetic resonance of lattice defects in irradiated quartz”, j. appl. phys., vol. 27, pp. 1376-1381, 1959. [37] h. e. boesch, jr, f.b. mclean, j.m. mcgarrity and g.a. ausman, jr,”hole transport and charge relaxation in irradiated sio2 mos capacitors”, ieee trans. nucl. sci., vol. 22, pp. 2163-2167, 1975. [38] w. l. warren and p.m. lenahan, “a comparison of positive charge generation in high field stressing and ionizing radiation on mos structure”, ieee trans. nucl. sci., vol. 34, pp. 1355-1358, 1987. [39] l. p. trombetta, f.j. feigl and r.j. zeto, “positive charge generation in metal-oxide-semiconductor capacitors, j. appl. phys., vol. 69, pp. 2512-2521, 1991. [40] r. k. freitag, d.b. brown and c.m. dosier, “experimental evidence of two species of radiation induced trapped positive charge”, ieee trans. nucl. sci., vol. 40, pp. 1316-1322, 1993. [41] r. k. freitag, d.b. brown and c.m. doser, “evidence for two types of radiation-induced trapped positive charge”, ieee trans. nucl. sci., vol. 41, pp. 1828-1834, 1994. [42] j. e. conley, p.m. lenahan, a.h. lelis and t.r. oldham, “electron spin resonance evidence for the structure of a switching oxide trap: long term structural charge at silicon dangling bond sites in sio2”, appl. phys. lett., vol. 67, pp. 2179-2181, 1995. [43] j. f. conley, p.m. lenahan, a.j. lelis and t.r. oldham, “electron spin resonance evidence that  e center can behave as switching oxide trap”, ieee trans. nucl. sci., vol. 42, pp. 1744-1749, 1995. [44] d. a. buchanan, a.d. marwick, d.j. dimaria and l. dori, “hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductors”, j. appl. phys., vol. 76, pp. 35953605, 1994. [45] d. j. dimaria, d.a. buchanan, j.h. stathis and r.e. stahlbush, “interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface”, j. appl. phys., vol. 77, pp. 20322040, 1995. [46] s.k. lai, “two carrier nature of interface-state generation in hole trapping and radiation damage”, appl. phys. lett., vol. 39, pp. 58-60, 1981. [47] s. k. lai, interface trap generation in silicon dioxide when electrons are captured by trapped holes”, j. appl. phys., vol. 54, pp. 2540-2546, 1983. [48] s. t. chang, j.k. wu and s.a. lyon, “amphoterical defects at si-sio2”, appl. phys. lett., vol. 52, pp. 622-624, 1986. [49] s. j. wang, j.m. sung and s.a. lyon, “relationship between hole trapping and interface state generation in metal-oxide-silicon structures, appl. phys. lett., vol. 52, pp. 1431-1433, 1986. [50] f. b. mclean, “a framework for understanding radiation-induced interface states in sio2 mos structures, ieee trans. nucl. sci., vol. 27, pp. 1651-1657, 1980. [51] n. s. saks, c.m. dozier and d.b. brown, ”time dependence of interface trap formation in mosfets following pulsed irradiation”, ieee trans. nucl. sci., vol. 35, no. 6, pp. 1168-1177, 1988. [52] n. s. saks and d.b. brown, “interface trap formation via the two-stage h+ process”, ieee tran. nucl. sci., vol. 36, no. 6, pp. 1848-1857, 1989. 540 m. pejović [53] d. l. griscom, d.b. brown and n.s. saks, nature of radiation-induced point deffcts in amorphous sio2 and their role in sio2-on-si structure,the physics and chemistry of sio2 and sisio2 interface, ed c.r. holmes and b.e. deal, ney-york, plenum, 1988. [54] k. l. brower and s.m. mayers, “chemsical kinetics of hydrogen and (111) sisio2 interface defect”, appl. phys. lett., vol. 57, pp. 162-164, 1990. [55] j. h. stathis and e. cartier, “atomic hydrogen reactions with pb centers at the (100) sisio2 interface”, phys. rev. lett., vol. 72, pp. 2745-2748, 1994. [56] e. h. poindexter, “chemical reactions of hydrogenous species in the sisio2 system”, j. non. cryst. solids, vol. 187, pp. 257-263, 1995. [57] r. e. stahlbush, a.h. edwards, d.l. griscom and b.j. mrstik, “post-irradiation cracking of h2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors”, j. appl. phys., vol. 73, pp. 658-667, 1993. [58] m. m. pejović, “physico-chemical processes in vertical-double-diffusion metal-oxide-semiconductor field effect transistors induced by gamma-ray irradiation and post-irradiation annealing”, facta universitatis, series: physics, chemistry and technology, vol. 13, pp. 13-27, 2015. [59] mcwhorter and p.s. winocur, “simple technique for separating the effects of interface traps and trappedoxide charge in metal-oxide semiconductor transistors”, appl. phys. lett., vol. 48, pp. 133-135, 1986. [60] m. v. fischetti, r. gastaldi, f. maggoni and a. madelli, “slow and fasdt states induced by hot electrons at sisio2 inteface”, j. appl. phys., vol. 53, pp. 3136-3144, 1982. [61] l. p. trombetta, f.j. feigl and r.j. zeto, “positive charge generation in metal-oxide-semiconductor capacitors”, j. appl. phys., vol. 69, pp. 2512-2521, 1991. [62] r. k. freitag, d.b. brown and c.m. dozier, “experimental evidence of two species of radiation induced trapped positive charge”, ieee tran. nucl. sci., vol. 40, pp. 1316-1322, 1993. [63] a.j. lelis. and t.r. oldham, “time dependence of switching oxide traps”, ieee tran. nucl. sci., vol. 41, pp. 1835-1843, 1994. [64] d. m. fleetwood, “border traps in mos devices”, ieee tran. nucl. sci., vol. 39, 269-271, 1992. [65] v. davidovic, ph. d., university of nis, 2010. [66] s. m. sze, physics of semiconductor devices, ney york, wiley, 1981. [67] a. holmes-siedle and l. adams, handbook of radiation effects, 2nd ed., new york: oxford university press, 2002. [68] m.a.b. eliot, “the use charge pumping currents to measure surface state densities in mos transistors”, solid-state electron., vol. 19, pp. 241-247, 1986. [69] j.s. brugler and p.g. jespres, “charge pumping in mos devices”, ieee trans. electron dev. lett., vol. 13, pp. 627-629, 1969. [70] g. groeseneken, h.e. maes, n. baltron and r.f. de keersmaeeker, “a reliable approch to chargepumping measurements in mos transistors”, ieee trans. electron dev., vol. 31, pp. 42-53, 1984. [71] r. e. paulsen, r.r. siergiej, m.l. french andm.h. white, “observation of near-interface oxide traps with the change pumping technique”, ieee electron dev. lett., vol. 13, pp. 627-629, 1992. [72] d. habaš, z. prijić, d. pantić and n. stojadinović, “charge-pumping characterization of sio2/si interface virgin and irradiated power vdmosfets”, ieee trans. electron dev., vol. 43, pp. 2197-2208, 1996. [73] s. c. witezak, k.f. gallawoy, r.d. schrimpf and j.r. brews, g. prevost, “ the determination of si sio2 interface trap density in irradiated four-terminal vdmosfets using charge pumping”, ieee trans. nucl. sci., vol. 43, pp. 2558-2564, 1996. [74] g. s. ristić, m.m. pejović and a.b. jakšić, „comparison between post-irradiation annealing and posthigh electrical field stress annealing of n-channel power vdmosfets”, appl. surf. sci., vol. 220, pp. 181-185, 2003. [75] a. kelleher, m. o’sullivan, j. rayn, b. o’neal and w. lane, “development of the radiation sensitivity of pmos dosimeters”, ieee tran. nucl. sci., vol. 39, pp. 342-346, 1992. [76] i. thomson, “direct reading dosimeters”, european patent office, ep0471957a2, 02/07/1991. [77] s. best, a. ralson and n. suchowerska, “clinical application of the one dose patient dosimetry system for total body irradistion”, phys. in medic. and biology, vol. 50, pp. 5909-5919, 2005. [78] m. m. pejović, “the gamma-ray irradiation sensitivity and dosimetric information instability of radfet dosimeter”, nucl. technol. and radiat. protection, vol. 28, pp. 415-421, 2013. [79] i. thomson, r.e. thomson and l. p. brendt, “radiation dosimetry with mos sensors”, radiation protec. dosimetry, vol. 6, pp. 121-124, 1983. [80] l. s. august, r.r. circle and j.c. ritter, “an mos dosimeter for use in space”, ieee tran. nucl. sci., vol. 30, pp. 508-511, 1983. p-channel mosfet as a sensor and dosimeter of ionizing radiation 541 [81] l. s. august, “estimating and reducing errors in mos dosimeters caused by exposure to different radiations”, ieee trans. nucl. sci., vol. 29, no. 6, pp. 2000-2003, 1982. [82] g. sarrabayrouse, a. bellaouar and p. rossel, “electrical properties of mos radiation dosimeters”, revue phys. appl., vol. 21, pp. 283-287, 1986. [83] a. ballaouar, g. sarrabayrouse and p. rassel, “mos transistor for ionizing radiation dosimetry”, proc. 13th yugoslav conf. on mictoelectronics (miel 85), ljubljana, pp. 161-168, 1985. [84] l. adams and a. holmes-siedle, “the development of mos dosimetry unit for use in space”, ieee trans. nucl. sci., vol. 18, pp. 1607-1612, 1978. [85] l. adams, e.j. daly, r. harboe-sorensen, a.g. holmes-siedle, a.k. ward and a.a. bull, “measurements of seu and total dose in geostationary orbit under normal and solar frame conditions”, ieee trans. nucl. sci., vol. 38, pp. 1686-1692, 1991. [86] j. s. leffler, s.r. lendgren and a.g. holmes-siedle, “the aplications of radfet dosimetry to equipment radiation qualification and monitoring”, trans. of the american society, vol. 60, pp. 535536, 1989. [87] a. g. holmes-siedle, l. adams, j.s. leffler and s.r. lingren, ”the radfet system for real-time dosimetry in nuclear facilities”, 7th annual astm-euratom symp. on reac. dosimetry, strasbourg, pp. 851-859, 1990. [88] g. ristić, s. golubović and m. pejović, “p-channel metal-oxide-semiconductor detector fading dependencies on gate bias and oxide thickness”, appl. phys. lett., vol. 66, pp. 88-89, 1995. [89] g. ristić, s. golubović and m. pejović, “sensitivity and fading of pmos dosimeters with thick gate oxide”, sensors and actuators a, vol. 51, pp. 153-158, 1996. [90] z. savić, s. stanković, m. kovačević and m. petrović, „energy dependence of pmos dosimeters“, radiation protect. dosimetry, vol. 64, pp. 205-211, 1996. [91] m. m. pejović and m. m. pejović, „radiation-sensitive field effect transistor response to gamma-ray irradiation“, nuclear technol. and radiat. protection, vol. 26, pp. 25-31, 2011. [92] m. m. pejović, „dose response, radiation sensitivity and signal fading of p-channal mosfets (radfrts) irradiated up to 50 gy with 60co”, appl. radiation and isotopes, vol. 104, 100-115, 2015. [93] s. pejović, p. bošnjaković, o. ciraj-bjelac and m.m. pejović, “characteristics of a pmosfet suitable for use in radiotherapy”, appl. radiation and isotopes, vol. 77, pp. 44-49, 2013. [94] g. ristić, a. jakšić and m. pejović, „pmos dosimetric transistors with two-layer gate oxide”, sensors and actuators a, vol. 63, pp. 129-134, 1997. [95] m. m. pejović, s.m. pejović, d. stojanov and o. ciraj-bjelac, “sensitivity of radfets for gamma and x-ray doses used in medicine”, nuclear technol. and radiat. protection, vol. 29, pp. 179-185, 2014. [96] m. pejović, o. ciraj-bjelac, m. kovačević, z. rajović and g. ilić, “sensitivity of p-channel mosfet to xand gamma-ray irradiation”, international journal of photoenergy, vol. 2013, pp. 1-6, 2013. [97] c. ehringfeld, s. schmid, k. poljanc, ch. kirisits, h. aiginger and d. georg, “application of commercial mosfet detectors in vivo dosimetry in the therapic x-ray range from 80 kv to 250 kv, physics in medicine and biology, vol. 50, pp. 289-303, 2005. [98] s. m. pejović, m.m. pejović, d. stojanov and o. ciraj-bjelac, “sensitivity and fading of pmos dosimeters irradiated with x-ray radiation doses from 1 to 100 cgy”, radiation protect. dosimetry, vol. 168, pp. 33-39, 2016. [99] p. j. mcwhorter, s.l. miller and w.m. miller, “modeling the anneal of radiation-induced traps holes in a varying thermal environment”, ieee trans. nucl. sci., vol. 37, pp. 16821689, 1990. [100] m. m. pejović, m. m. pejović and a.b. jakšić, “response of pmos dosimeters on gamma-ray irradiation during its re-use”, radiation protection dosimetry, vol. 155, pp. 394-403, 2013. [101] j. aristu, f. calvo, r. martinez, j. dubois, m. santors, s. fisher, et al., “lung cancer, in; intraoperative irradiation techniques and results, 437-453, 1999. [102] l. j. asensio, m.a. carvajal, j.a. lopez-villaneva, m. vilches, a.m. lallena and a.j. palma, „evaluation of a low-cost commercial mosfet as radiation dosimeter“, sensors and actuators a, vol. 125, pp. 288-295, 2006. [103] m. s. martinez-garcia, f. simancos, a.j. palma, a.m. lallena, j. banqueri and m.a. carvajal, „ general purpose mosfets for the dosimetry of electron beams used in intra-operative radiotherapy“, sensors and actuators a, vol. 210, pp. 175-181, 2014. [104] m. m. pejović, „application of p-channel power vdmosfet as a high radiation dose sensor”, ieee trans. nucl. sci., vol. 62, pp. 1905-1910, 2015. facta universitatis series: electronics and energetics vol. 35, no 1, march 2022, pp. i-ii © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd guest editorial advanced low-dimensional nanoelectronic devices: physics and modeling nanoelectronic devices of various kinds are essential for vlsi circuits. the struggle to follow moore’s law is becoming increasingly difficult and complex, requiring multitudinous novel approaches in order to continue decreasing dimensions of the devices which are already firmly established in the nano-world. as an example, the most advanced state of the art vlsi’s (microprocessors) currently can contain more than 50 billion transistors per chip. as far as the actual physical dimensions are concerned, in 2021 the ibm company announced their 2 nm chip. the efforts behind such achievements are enormous. this special issue on advanced planar nanoelectronics investigates some points of interest related to the physics of such devices, as well as their simulation, thus giving its contribution to the existing trends in this rapidly evolving and constantly expanding field. on may 19–20, 2021, the ieee kgec student branch chapter, in association with department of ece, kgec, technically co-sponsored by ieee eds kolkata chapter, organized international conference “devices for integrated circuit (devic)”, held in virtual mode as a measure of precaution against the covid-19 pandemic. the devic 2021 ended being a major international conference in the area of electronic devices for application in integrated circuits, with more than 300 submitted papers. it brought together leading scientists, researchers and industry professionals who shared their information and experiences and discussed practical challenges encountered and solutions adopted related to the latest developments in the area of electronic devices, circuits and vlsi. the conference was dedicated to the design, modeling and simulation of nanoelectronic devices, components, circuits and systems. the acceptance rate for the conference was about 50%, which has shown the stringent quality criteria applied to all contributions. the full proceedings of the conference were published by the ieee (isbn: 978-1-7281-99559) and can be found at ieee xplore. selected papers from devic 2021 were used as a loose inspiration for writing extended and modified and amended manuscripts with qualitatively new results for this special section of facta universitatis series: electronics and energetics. thus the articles published here had been specifically written for this special section, being loosely based on the corresponding devic 2021 presentations. each newly produced manuscript was subject to a rigorous peer reviewing procedure in which two or three reviewers from different countries were engaged. five papers altogether were selected for this special issue. the chosen articles are the following 1. dhananjaya tripathy, debiprasad priyabrata acharya, prakash kumar rout, sudhansu mohan biswal, "influence of oxide thickness variation on analog and rf performances of soi finfet" received january 31, 2022 ii guest editorial 2. remya jayachandran, k. j. dhanaraj, p. c. subramaniam, "planar cmos and multigate transistors based wide-band ota buffer amplifiers for heavy resistance load" 3. surajit bosu, baibaswata bhattacharjee, "all-optical frequency encoded dibitbased parity generator using reflective semiconductor optical amplifier with simulative verification" 4. bibek chettri, abinash thapa, sanat kumar das, pronita chettri, bikash sharma, "first principle insight into co-doped mos2 for sensing nh3 and ch4" 5. pranati ghoshal, chanchal dey, sunit kumar sen, "realization of a modified 8bit semiflash analog to digital converter based on bit segmentation scheme" the guest editors hope that the high quality of the papers included in this issue will encourage young authors to present their own achievements. the greatest pleasure for the editors would be to see new publications inspired by this special section. the guest editors would like to express their gratitude to all of the authors who ensured the existence of this special issue through their excellent contributions. the gratitude also extends to the organizers of the devic 2021 who assembled such a choice group of worldclass researchers, to fuee editor-in-chief, prof. danijel danković, as well as to the late member of the serbian academy of sciences and arts, prof. ninoslav stojadinović, who, before his untimely death, initiated and outlined the work on this special section, in cooperation with the general chair of devic 2021, prof. dr. anguman sarkar. guest editors: prof. dr. angsuman sarkar professor, kalyani government engineering college, university of kalyani, kalyani, west bengal, india prof. dr. arpan deyasi assistant professor, department of electronics and communication engineering, rcc institute of information technology, kolkata, india prof. dr. jyotsna kumar mandal professor, faculty of engineering, technology and management, kalyani university, kalyani, nadia, west bengal, india prof. dr. chandan kumar sarkar professor, department of electronics and telecommunication engineering, jadavpur university, jadavpur, kolkata, west bengal, india prof. dr. zoran jakšić full research professor, institute of chemistry, technogy and metallurgy, national institute of the republic of serbia – university of belgrade, serbia associate editor, facta universitatis series: electronics and energetics instruction facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 233 241 doi: 10.2298/fuee1602233j algorithm for uptake assessment in small lesions based on dynamic scintigraphy scans * milica m. janković 1 , vera miler jerković 1 , ana koljević marković 2 , dejan b. popović 1 1 university of belgrade – faculty of electrical engineering, belgrade, serbia 2 national cancer research center of serbia, belgrade, serbia abstract. the aim of our research was to develop an algorithm for estimation and visualisation of radiopharmaceutical uptake based on time-activity-curve (tac) analysis in small regions of interest (roi) in scintigraphic studies. the algorithm is implemented in labview environment (national instruments, texas, austin) and comprises the following steps: 1) delineation of grid of small rois over the examined tissue and corresponding tac processing; 2) background vs tissue separation; 3) the extraction of all “suspected“ rois where tacs are not exponentially descendent; 4) correlation analysis between a tac corresponding to the central suspected roi and tacs of neghboring rois; 5) the extraction of representative tac for “suspected“ area by principal component analysis technique; and 6) visual interpretation of radiopharmaceutical distribution in the “suspected“ area. the application of algorithm is presented in data recorded in case of histopathologically proven parathyroid tumors. key words: uptake, time activity curve, principal component analysis, parathyroid tumor 1. introduction scintigraphy is a nuclear medicine diagnostic test for the visualization of spatial distribution of radioactivity uptake in a tissue. radioactivity is taken by injection, inhalation or swallowing of medical agents (radiopharmaceuticals) with incorporated radioisotopes and the spatial distribution of radioactivity uptake is monitored by planar scintillation camera, spect (single photon emission computer tomography) or pet (positron emission tomography) camera. dynamic scintigraphy is a diagnostic test for examining the function of organs and physiological systems. the result of this type of scintigraphy is a series of frames (dynamic scintigrams) recorded in short time intervals (10 seconds to 1 minute apart, depending on the type of organ and disease). time activity curve (tac) is a quantitative indicator of * an earlier version of this manuscript received the best oral paper award of the biomedical section at the 58th etran conference, vrnjačka banja, 2-5 june, 2014 [1]. received february 23, 2015; received in revised form june 14, 2015 corresponding author: milica m. janković university of belgrade – faculty of electrical engineering, bulevar kralja aleksandra 73, belgrade, serbia (e-mail: piperski@etf.rs) 234 m.m. janković, v. miler jerković, a. koljević marković, d.b. popović radioactivity uptake changes in a specific region of interest (roi) over time. distinguishing typical tac patterns is of great importance for diagnostic purposes. beside the diagnostic application, scintigraphy has a very important place as a technique of preoperative imaging whose main goal is the precise localization of lesions in order to perform minimally invasive surgery [2-5]. in our previous work, we presented a submarine method, based on tac monitoring in small rois and finding abnormal tac patterns corresponding to lesions [6]. submarine method has proven useful for preoperative dynamic scintigraphic imaging of small lesions, especially in case of parathyroid imaging [6-8]. in this paper we introduce an algorithm that allows the precise uptake assessment in small lesions based on dynamic scintigrams and visual interpretation of uptake distribution in lesion area based on visualization of correlation matrix [1,8]. this algorithm is implemented as an additional tool in submarine software. 2. methods and materials typical tac pattern of health tissue consists of three phases: increasing vascular phase (the radioactivity in the target roi is rapidly growing), accumulation uptake phase (radioactivity is accumulated in the target roi) and washout phase (phase of exponential radioactivity decrease in the target roi), [9]. in the case of lesions, the atypical tac pattern (prolonged retention of radiopharmaceutical in the target tissue or even a peak of radioactivity in washout phase) could be observed, fig. 1. fig. 1 difference in tac patterns for healthy tissue and lesion in case of small lesions (<1 cm 3 ), it is very difficult or impossible to visually detect abnormal radioactivity uptake in individual frames, while it is clearly visible in the washout phase of tac, fig. 2. central roi of lesion is delineated by black color in fig. 2a, and another three rois shifted relative to the central roi are also delineated. tacs corresponding to highlighted rois are presented in fig. 2b (tac1, tac2, tac3, tac4). a high degree of correlation between curves tac1 and tac2 (r=0.93), tac1 and tac3 (r=0.97) could be observed, versus substantially less correlated tac1 i tac4 (r=0.67). tacs corresponding to regions positioned over the lesion are not exponential in washout phase and are strongly correlated. this fact is used for defining the algorithm for uptake assessment and its visualization in small lesions. uptake visualisation in small lesions by dynamic scintigraphy 235 fig. 2 a) a single frame from a dynamic image sequence, taken at the 23 th minute, with delineation of rois in the region of lesion (44 pixels, 66 mm) b) tacs corresponding to rois delineated in a) 2.1. software the algorithm is implemented in the software for reading and processing dynamic studies introduced by authors in previous work [10]. software is developed in labview 8.6 environment (national instruments, texas, austin) and additional ni labview biomedical toolkit. realized application enables:  selection and readout of a dynamic scintigraphic study consisted of dicom [11] images (each frame is archived as a separate .dcm file);  rectangular cropping of frames to the region that is to be processed further – selection cropping position is performed on selected frame with visual inspection of cropping position in all frames;  localization and visualization of small lesions by algorithm for uptake assessment presented in section 1.2. 236 m.m. janković, v. miler jerković, a. koljević marković, d.b. popović checking principal component analysis conditions (see section 1.3) for examples presented in section 2 was performed in rstudio, version 0.98.976. 2.2. algorithm description the algorithm for small lesion localization and visualization consists of six steps shown in fig. 3. fig. 3 flowchart of the algorithm for the uptake assessment in small lesions. roi – region of interest, tac – time activity curve step 1 cropped area, containing the tissue that will be examined, is automatically divided into n small square rois, equal in size n x n, where n is a number of pixels (n=4 is a default value, but user can change it). this number of rois (n) will be reduced in step 2 into the number of rois (t) which belongs to the tissue (tn). the number of tissue rois (t) will be reduced in step 3 into the number of rois (m) whose tacs are not exponentially descendent (mt) and thereby indicate the abnormal radioactivity uptake and the potential lesion. tacs corresponding to all n roi cells are calculated and smoothed by cubic spline technique using labview function cubic spline fit.vi [12]. user can adjust the value (range [0,1]) of balance parameter (input parameter of cubic spline function) taking into consideration the requirement that the coefficient of determination (r-square) is greater than 80% (user sets minimum balance parameter for which r-square>80%). labview function goodness of fit.vi is used for estimation of r-square value based on the raw tac and the cubic spline filtered tac. step 2 maximum values of radioactivity tac cs i max are calculated for all tac cs i (i=1, n). reference value p for discriminating tissue from background is calculated according to the following equation: nitacp i ,1),max( max cs  (1) uptake visualisation in small lesions by dynamic scintigraphy 237 further analysis continues only for those t rois (tn) that belong to the tissue, which means that satisfy the condition tac cs i max > m  p, 00.8), because the prerequisite for pca is good correlation, or too high in order to avoid multicollinearity (cxy<0.9) [13]. the value of determinant indicates on multicollinearity or singularity among original variables and it should not be less than 0.00001. in the case when the value of determinant is less than 0.00001, it means that some variables are highly correlated. the kaiser-meyer-olkin (kmo) is a measure of sampling adequacy [15]. it compares correlation and partial correlations between variables. kmo takes values between 0 and 1. the value of kmo should be greater than 0.5 if the sample is adequate. the bartlett's test of sphericity is a test used to examine the null hypothesis: “variables are uncorrelated, correlation matrix is an identity matrix”. therefore, we need to get p-value < 0.05 in this test and conclude that null hypothesis can be rejected. for choosing the number of principal components we used the kaiser rule and screeplot combined with the amount of total variance that the chosen principal components have (the amount of total variance above 80 % is usually suggested) [16]. the rotation of principal components is used for improving interpretation of results. we have chosen the orthogonal rotation – varimax [16]. uptake visualisation in small lesions by dynamic scintigraphy 239 3. results and discussion we demonstrated the results of suggested algorithm for radioactivity uptake assessment in two patients who underwent parathyroid scintigraphy in the national cancer research center of serbia, belgrade. scintigraphic recording was performed in patients suspected of having primary hyperparathyroidism (phpt) based on previous biochemical analysis (increased level of parathyroid hormone) and positive ultrasound findings. patient data (biochemical, ultrasound, biopsy) are shown in table 1. table 1 patients: biochemical, ultrasound and biopsy data. phpt – primary hyperparathyroidism, pth parathyroid hormone data patient 1 patient 2 gender female male age [years] 69 19 pth [pg/ml] 223 125 phpt ultrasound positive positive previous thyroidectomy no yes, right histopathology parathyroid adenoma parathyroid cancer tumor position right inferior left superior tumor volume [mm3] 60 55 siemens e.cam camera and siemens syngo e.soft 2007 software (siemens ag, erlangen, germany) have been used for image acquisition. after intravenous 99m tc mibi administration (with the radioactivity of 500 mbq, 13.5 mci), 35 minutes of dynamic parathyroid scintigraphy (1 frame/min, dimension of image matrix: 128x128, pixel size 1.5 mm, zoom 3.2, anterior view) were performed. results of pre-analysis pca data are presented in table 2. all pca criteria from section 1.3 are satisfied (determinant value>0.00001, kmo>0.5, p-value<0.05 for bartlett's test). first principal component carries more than 80% of total variance, which means that it is representative of tac changes. fig. 5 shows results of algorithm applied in patient 1 for two dimensions of roi cells (33 pixels and 44 pixels). visual inspection of standard dynamic scintigram at the moment of radioactivity peak in washout phase cannot distinguish lesion from healthy tissue, unlike suggested parametric imaging (fig. 5a). better discrimination between lesion and healthy tissue is evident in case of smaller roi dimension, closer to the real lesion localization (compare fig. 5a left and right). representative tac patterns are presented in fig. 5b. the position of small parathyroid adenoma (right inferior) was surgically confirmed. table 2 results of pre-analysis pca data parameters patient 1 patient 2 33 pixels (4.54.5 mm) 44 pixels (66 mm) 44 pixels (66 mm) determinant value 0.00006 0.00009 0.00008 kaiser-meyer-olkin value 0.855 0.806 0.805 bartlett's test (p-value) 0.000 0.000 0.000 number of principal components 1 1 1 amount of total variance [%] 89.97 91.19 89.02 240 m.m. janković, v. miler jerković, a. koljević marković, d.b. popović fig. 5 a) a single frame from a dynamic image sequence, taken at the 22 nd minute and visual interpretation of lesion localization by introduced algorithm b) representative tac patterns obtained by principal component analysis fig. 6a shows results of visualization algorithm applied in patient 2. representative tac pattern is presented in fig. 6b. the position of small parathyroid cancer (left superior) was surgically confirmed. fig. 6 a) a single frame from a dynamic image sequence, taken at the 24 th minute and a visual interpretation of lesion localization by suggested algorithm b) representative tac pattern obtained by principal component analysis uptake visualisation in small lesions by dynamic scintigraphy 241 4. conclusion in this paper, we introduced an algorithm that enables the display of orientation, shape and boundaries of lesions. the algorithm visualizes the propagation of tac correlation in the lesion area. the application of such algorithms is desirable in preoperative diagnostics in order to plan surgery. further investigation will be related to the development of fully automated algorithm for lesion localization from dynamic scintigrams and its evaluation in a larger population with different oncological diseases. acknowledgement: the paper is financially supported by the ministry of education, science and technological development of the republic of serbia (no. 175016) and the company national instruments (slovenia, ljubljana). references [1] m. m. janković, v. miler jerković, a. koljević marković and d. b. popović, "algorithm for the uptake assessment in small lesions in dynamic scintigraphy ", in proceedings of the 58th etran conference, 25 june, vrnjačka banja, 2014, pp. me 1.1 1-4 [in serbian]. [2] d. fuster, s. vidal-sicart, t. josé-vicente, p. paredes, d. rubello and f. pons, "what is the role of preoperative scintigraphic imaging and the intraoperative gamma probe in secondary hyperparathyroidism?" nucl med commun, vol. 35, no. 5, pp. 443-445, 2014. [3] i. stoffels, m. müller, m.h. geisel, j. leyh, t. pöppel, d. schadendorf and j. klode, "cost-effectiveness of preoperative spect/ct combined with lymphoscintigraphy vs. lymphoscintigraphy for sentinel lymph node excision in patients with cutaneous malignant melanoma", eur j nucl med mol, [epub ahead of print] 2014. [4] m. ibusuki, y. yamamoto, t. kawasoe, s. shiraishi, s. tomiguchi, y. yamashita, y. honda, k. iyama and h. iwase, "potential advantage of preoperative three-dimensional mapping of sentinel nodes in breast cancer by a hybrid single photon emission ct (spect)/ct system", surg oncol, vol. 19, no. 2, pp. 8894, 2010. [5] m. giuliano, s.a. gulec, d. rubello, g. boni, m. puccini, m.r. pelizzo, g. manca, d. casara, g. sotti, p. erba, d. volterrani and a.e. giuliano, "preoperative localization and radioguided parathyroid surgery", j nucl med, vol. 44, no. 9, pp. 1443-1458, 2003. [6] a. koljević marković, m. m. janković, i. marković, g. pupić, r. džodić and a. b. delaloye, "parathyroid dual tracer subtraction scintigraphy: small regions method for quantitative assessment of parathyroid adenoma uptake", ann nucl med, vol. 28, pp. 736-745, 2014. [7] m. đurović m, m. m. janković and a. koljević marković, " semi-automatic localization of parathyroid tumors in dynamic sestamibi scintigrams ", in proceedings of the 22nd telecommunications forum telfor 2014, 25-27 november, belgrade, 2014, pp. 955-958 [in serbian]. [8] m. m. janković, " computer system for acquiring, storing, retrieving and processing images obtained by gamma camera ", phd thesis, university of belgrade – faculty of electrical engineering, 2014 [in serbian]. [9] m. p. sandler, r. e. coleman, j. a. patton, f. j. th. wackers and a. gottschalk, diagnostic nuclear medicine, 4th ed. philadelphia: lippincott williams & wilkins, 2003. [10] m. m. janković, a. koljević marković and d. b. popović, " labview application for analysis of time activity curves in regions of small lesions in nuclear medicine ", in proceedings of the 57th etran conference, 3-6 june, zlatibor, 2013, pp. me 1.9 1-5 [in serbian]. [11] http://dicom.nema.org/ [12] j. s. fleming and r. w. kenny, "a comparison of techniques for the filtering of noise in the renogram, " phys med biol, vol. 22, no. 2, pp. 359-364, mar. 1977. [13] j. e. jackson and j. wiley, a user's guide to principal components. new york: john wiley and sons, inc., 1991. [14] t. m. lehmann, c. gönner and k. spitzer, "interpolation methods in medical image processing, " ieee trans med imag, vol. 18, no. 11, pp. 1049-1075, nov. 1999. [15] h. f. kaiser, "an index of factorial simplicity," psychometrika, vol. 39, pp. 31-36, 1974. [16] i. t. jolliffe, principal component analysis. 2nd ed. new york, usa: springer, 2002. http://dicom.nema.org/ instruction facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 437 450 doi: 10.2298/fuee1603437l a hadoop-enabled sensor-oriented information system for knowledge discovery about target-of-interest yu liang, chao wu department of computer science and engineering, university of tennessee at chattanooga, usa abstract. to obtain a real-time situational awareness about the specific behavior of targets-of-interest using large-scale sensory data-set, this paper presents a generic sensor-oriented information system based on hadoop ecosystem, which is denoted as sois-hadoop for simplicity. robotic heterogeneous sensor nodes bound by wireless sensor network are used to track things-of-interest. hadoop ecosystem enables highly scalable and fault-tolerant acquisition, fusion and storage, retrieval, and processing of sensory data. in addition, sois-hadoop employs temporally and spatially dependent mathematical model to formulate the expected behavior of targets-of-interest, based on which the observed behavior of targets can be analyzed and evaluated. using two realworld sensor-oriented information processing and analysis problems as examples, the mechanism of sois-hadoop is also presented and validated in detail. key words: sensor-oriented information system, hadoop ecosystem, target of interest, wireless sensor network, mathematical model. 1. introduction an information system is generally a computer-centric system that integrates data acquisition, processing and analysis, storage and communication, interpretation, and knowledge discovery, etc. [1-4]. sensor-oriented information systems addressed in this work aim to obtain a panoramic, timely, trusted understanding about the observed behavior of targets-of-interest (toi) [3][5-10] by exploiting networked sensor assets, which consist of large number of autonomous, heterogeneous, and multi-layer sensor nodes. it is an extremely computationally intense, labor-intensive and highly unreliable job to derive a real-time situational awareness about toi from high volume, high generation velocity, wide variety of sensory data, the addressed sensor-oriented information system is constructed over hadoop ecosystem [8][11], a conventionally used big-data platform. received july 1, 2015; received in revised form november 16, 2015 corresponding author: yu liang department of computer science and engineering, university of tennessee at chattanooga, tennessee, 37403, usa (e-mail: yu-liang@utc.edu) 438 y. liang, c. wu this paper proposes a generic sensor-oriented information system based on hadoop cluster (sois-hadoop) [11-14] to monitor and analyze the specific behavior of target-ofinterest (toi) according to persistent surveillance sensory data. the addressed soishadoop has the following features: (1) employing temporally and spatially dependent mathematical models [3][9][15][16] to formulate the expected behavior about targets-ofinterest, based on which the observed behavior of toi can be evaluated or the future behavior of toi can be predicted; (2) tracking toi through deploying networked autonomous sensor nodes, which will be tuned using collective control and self-optimization to achieve the optimal, reliable, and energy-efficient observations; (3) using hadoop ecosystem to handle the acquisition, fusion, storage, management and mining of large-scale real-time/historical sensory data. the major topics of this paper include: (1) a generic hardware and software infrastructure, and the implementation flowchart of sois-hadoop; (2) the application of sois-hadoop in real-world sensor-enabled engineering problems such as predictive analysis of the aggregation of carp, and the anomaly detection of traffic flow; (3) mathematical modeling about the expected behavior of toi, both microscopic and macroscopic strategies are addressed. the remainder of the paper is organized as follows: section 2 discusses the hardware infrastructure of the sois-hadoop system; section 3 discusses the software framework of the sois-hadoop system; section 4 briefly introduces the flowchart of the system; section 5 uses two representative sensor-oriented information analysis problems as benchmark to demonstrate the mechanism and implementation of sois-hadoop; section 6 introduces macro-cell strategy, a divide-and-conquer method, to manipulate large-scale application problems with high scalability; section 7 summarizes the effort. 2. hardware architecture of hadoop xen clusters the overarching goal of this interdisciplinary project is enabling robust intelligent systems which can operate autonomously for long periods of time. this ability requires that all system components are seamlessly integrated. figure 1 shows the hardwareconfiguration of hadoop based sensory data processing and analysis system. the proposed system consists of three hardware modules: (1) data acquisition and pre-processing based on mobile computing platform (e.g., iphone, laptop, etc.). sensory data may be acquired by multiple sensors at the same time. pre-processing indicates translating stream sensory data such as video data into semi-structured format data such as xml format (www.w3.org). (2) data storage and management server based on hadoop cluster, which is built using multiple inter-connected xen virtual machines. (3) data analysis and visualization client, which mainly simulates the temporally and spatially dependent mathematical model. to fully exploit sensor asset, the following issues need to be investigated: (1) the design and development of provably correct, decentralized algorithms for finding and localizing multiple mobile toi using a networked sensor nodes [17], and synchronizing sensor stream, etc.; (2) achieving longevity and energy-efficiency by developing energy efficient motion planning algorithms; studying system level energy trade-offs and optimization; improving system life-time by energy harvesting; (3) mobility and energy aware communication protocols for robotic networks; and (4) data analysis algorithms to a hadoop-enabled sensor-oriented information system for knowledge discovery about... 439 discover toi’s mobility patterns at multiple scales and how these patterns correlate with environmental parameters. fig. 1 hardware configuration of sois-hadoop (dash-line indicates those internet link). as illustrated in figure 1, a multitude of collaborative mobile sensor nodes are deployed to detect, discriminate, localize, and track targets of interest (tois). each sensor node is managed by a raspberry pi single-board computer (www.raspberrypi.org), which is equipped with the robot operating system (www.ros.org), 3g/4g cdma cellular gateway that will provides sensor nodes with internet connectivity based on radio transceiver, solar panel, gps-aided inertial navigation system [18], and electro-optical sensor used to capture the movement of tois. robot operating system provides standard operating system services such as low-level device control, implementation of commonly-used functionality, inter-process message passing, and package management. fig. 2 (a) monitoring invasive fish with an robotic boat (univ. of minnesota); (b)-(c) tracking and analysis of the movement of vehicle according to low-resolution video data acquired by uav flying over the city figures 2(a)-(c) illustrates that mobile sensor nodes [19] are deployed to track carp in lakes and monitor traffic status over a city respectively. long-term operation of sensor nodes necessitates a long-term energy source. in this work, the energy consumption [20] for wireless sensor network [21] will be minimized from the point of view of mobility, communication, and solar harvesting. first, accurate trajectory estimation about moving sensor network for data acquisition and pre-processing data analysis and visualization client (hosted by multi-processor highperformance parallel computer system) hadoop cluster (fusion, storage, management) xen virtual machine cellular gateway 440 y. liang, c. wu toi will greatly optimize the motion of sensor-nodes; second, wireless communication is the largest energy consumer on the robotic platform, ieee 802.15.4 wireless personal area networks protocol (standards.ieee.org ) is used in our work; the topology of wireless sensor network, synchronization technique, wsn routing algorithm, transmission protocol, and long path-loss models [22] may all determine the energy efficiency of wsn. third, the robotic vehicle for toi tracking is equipped with solar panel coupled to a solar charger and a deep-cycle rechargeable battery. a hadoop ecosystem built on xen linux virtualization (www.xenproject.org) cluster provides a highly scalable and fault-tolerant platform for acquiring, fusing, storing and analyzing huge amounts of sensory data in a distributed computing environment. data analysis and visualization client mainly handle the simulation of temporally and spatially dependent mathematical model, the most computationally intensive operation in the implementation sois-hadoop. in this work, data analysis and visualization client is hosted by a multi-processor and multi-core parallel computing machine. message passing interface (mpi) parallel programming paradigm is used to implement the simulation of temporally and spatially dependent mathematical model [8][23]. 3. software infrastructure of sois-hadoop figure 3 demonstrates the software infrastructure about sois-hadoop. considering the addressed information system is driven by huge-scale heterogeneous sensory data [3], highly scalable, robust, and relatively accurate computational methods are investigated in the implementation of sois-hadoop. accessory information (e.g., geographic information, weather condition, and historical data, which are of xml format in our implementation) system and persistent surveillance sensory data constitute two major important inputs for sois-hadoop. hadoop-ecosystem [14] is employed as the main engine of sois-hadoop: flume (flume.apache.org) acquires, aggregates, pre-processes, and then forward the sensory data to hadoop distributed file system (hdfs); sqoop (sqoop.apache.org) provides an interface between accessory information and hdfs; built on the top of hdfs, hbase (hbase.aparche.org) provides a realtime and random access to the data; hbase is equipped with nosql database [7], which is of key-value format, supports highly scalable, concurrent, and fault-tolerant storage about structured or semi-structured data appeared in sois-hadoop because it does not need to category and parse the sensory data into fixed format; hive (hive.apache.org) facilitates query and managing large dataset; r-connector and mahout (mahout.apache.com) are employed in the mining and statistical analysis about sensory and accessory data. as one of our major contributions, analytics module extracts the features about target-of-interest from data using temporally and spatially dependent mathematical model. classification and clustering module use machine learning strategy to measure the event according to the features obtained in analytics module. a hadoop-enabled sensor-oriented information system for knowledge discovery about... 441 fig. 3 infrastructure for sois-hadoop. 4. a generic flowchart for sensor-oriented information analysis system fig. 4 shows a generic flow-chart about the sensor-oriented information analysis system [12]. geographic information module defines the geometry configuration of the scene; mathematical model about the expected behavior of target-of-interest [6], which is emphatically investigated in this paper, agent-based mathematical model is used to anticipate the evolution of observed behavior about carp school; persistent surveillance sensory data is directly acquired from sensors. in addition, the acquisition, pre-processing, storage, retrieval are all implemented based on hadoop ecosystem [11] including apache flume, mahout, hive, and r-connector, etc. fig. 4 also illustrates that the implementation of sensor-oriented information analysis system consists of following two threads: (1) formulating the mathematical model (e.g., spatialand temporal-dependent partial differential equations) using historical sensory data about the expected behavior of thing-of-interest (toi) [5][6][13][24]. (2) processing and integration of observed sensory data. a situational awareness is derived from these two threads. then the situational awareness will reversely guide the self-optimization of datacollection and cooperative control [25] of sensor nodes so as to generate more accurate understanding about external events and achieve longevity by developing energy-efficient motion planning algorithms. the mathematical model about the expected behavior of target-of-interest is formulated according to the geographic information and the historical records about target-of-interests. the core calculations corresponding to mathematics modeling include (1) statistical analysis about the historical sensory data stored in hadoop distributed file system (hdfs), and (2) numerical solution to the mathematical simulation (e.g., using finite element method [9][14][16][23] to solve the temporal and spatial-dependent partial differential equations. 442 y. liang, c. wu fig. 4 a generic flow-chart about sensor-oriented information analysis system. processing of persistent surveillance video data includes the following operations: (1) acquisition of video data; (2) segmentation, which extracts pixels of target-of-interests (toi) from background; (3) isolation of tois out of noise or other moving objects; (4) translation of optical behavior features (i.e., the velocity and position of moving tois within the sensor coordinate system) of detected pedestrians into their actual geographical features (i.e., the velocity and position of moving targets within the geographic coordinate system); (5) documentation, which posts the output in a format suitable for post-processing and includes position, velocity, and track. the implementation of both threads is highly computation and storage-intensive. 5. data analytics based on mathematical model in the context of sensor-oriented analysis, data analytics of sensory data aims to disclose specific behavior of target-of-interest (toi) out of sensory data [9][10][16]. for example, it is a significant task to detect those speeding or wrong-way vehicle out of surveillance video on the road; therefore a description about the expected (or normal) traffic flow is needed so that those abnormal vehicles can be identified. the expected behavior (i.e., normal behavior) of toi is commonly modeled using macroscopic or microscopic method. microscopic method, which is also called agent-based method, provides a detailed formulation about the behavior of toi while suffers from inhibitive computational cost and accumulated numerical error. macroscopic method generally uses timeand space-dependent partial differential equations (pde) to formulate the expected behavior of toi. in this paper, microscopic and macroscopic methods are used to simulate the aggregation of carp [26-33] and vehicle traffic flow [34-36] respectively. a hadoop-enabled sensor-oriented information system for knowledge discovery about... 443 5.1. aggregation of carp since being introduced to the u.s. in the 1970 for the purpose of weed and parasite controlling in aquatic farms [37-39], the asian carp (including bighead carp, the black carp, the grass carp, and the silver carp) has gradually established breeding populations in mississippi river region [39-41]. asian carps are causing serious damage to the area’ fresh-water ecosystem [38][40][42]. in order to provide constructive information to control the populations of asian carps [26][43], the addressed sois-hadoop is customized and employed to predict the collective behaviour of asian carps (figure 5(a)). in this work, an agent-based mathematics model (a microscopic method) is presented to formulate the aggregation of asian carps. based on the statistical analysis about empirical sensory data, the pair-wise interaction uij is defined using modified van der waals forces [44], where the corresponding potential function uij between carp-i and carp-j is defined by the formula (1).             || || || || || || || || (|| || ) ( || || ) ( || || ) ij ij s s ij h s ij h s m n ij sr r m n ij s ij hr r m n h ij kr r r r r r r r u r r r r r r                                         (1) where rij = xi  xj, m > n, and   1 m nn s m r  (such that uij(||rij||) = 0 when rs  rij  rh). from formula (1), it follows that the resulting force function is:         1 1 || || || || 1 1 || || || || || || (|| || ) 0 ( || || ) ( || || ) ij ij ij h s ij h s ij ij ij m n ij sr r s ij h m n h ij kr r r r r r u f r m n r r r r r m n r r r                                            (2) compared to alternative models such as [33][45][46], the addressed model can efficiently formulate the “aggregation” of carp school. fig. 5 (a) aggregation of carp; (b) interaction zones between neighboring carp. 444 y. liang, c. wu rs, rh, and rk are illustrated in fig. 5(b), ||rij|| indicates the distance between two neighboring carps.  is constant coefficient derived from empirical data. it should be remarked that the moving orientation, water flow velocity and blind zone is not considered in the formulation of formula (1). fig. 6 (a) inter-carp potential energy; (b) inter-carp force (m = 12; n = 6) fig. 6(a) shows the potential energy incurred by the pair-wise interaction between two neighboring carps. fig. 6(b) shows the resulting inter-carp force. it can be observed that, inter-carp potential energy has a stable zone (or parallel zone), within which the intercarp potential energy is basically constant so that the neighboring carps can cruise without influencing each other. fig. 7 (a) interaction between neighboring carps; (b) ij value with variant max (denoting the visible zone) according to ichthyology [31-32], the interaction between carps is supposed to be corresponding to blind-zone (figures 5(b) and 7(a)). as illustrated in the figure 7(a), i is the velocity of i-th carp. max is the maximal perceptible angle, obviously 0  max  . ij indicates the angle between i and rij, it is defined by the following formula: arccos || || || || i ij ij i ij r r            (3) a hadoop-enabled sensor-oriented information system for knowledge discovery about... 445 given the blind-anglemax, the inter-carp potential is defined as: * ij ij iju u  (4) where 2 2 2 max2 max ( ) 2 ij ij ij e           (5) as a consequence, the inter-carp interaction force is determined by the following formula: * * || || ij ij ij ij ij f u f r      (6) where fij is defined in equation (2). based on the above mathematical model for carp schooling, the future status of carp school can be predicted according to the currently observed sensory data using agent-based mathematics model addressed above. furthermore, based on the preliminary simulation results, the motivations of fish aggregation, such as foraging advantages, reproductive advantages, predator avoidance, or hydrodynamic efficiency, can be disclosed. fig. 8 snapshots about the simulation of carp aggregation and corresponding standard-deviation of kinetic energy (the size of fish school is 50): (a) initial stage; (b) aggregation stage 446 y. liang, c. wu figure 8 demonstrated the aggregation process of a fish school of size 50. it is illustrated that carp gradually gather due to the pairwise interaction between neighboring carp; in addition, standard-derivation of kinetic energy of carp can be used to measure the aggregation status of carp school, namely a carp school in aggregation has smaller standard deviation of kinetic energy. 5.2. vehicle traffic analysis traffic flow analysis plays a significant role in civil engineering, transportation management, and homeland security [34]. due to the influence of rapid urbanization and modern industrialization, traffic congestion has become an intolerable issue in today’s world. modeling and simulation of traffic flow provides an efficient way to understand traffic congestion and disclose corresponding remedy. mathematical models for traffic flow are categorized into microscopic (or agent-based) and macroscopic strategies. macroscopic models study traffic from an average (or continuum) perspective, while microscopic models study the motion of individual vehicles. macroscopic model uses temporal and spatial-dependent partial differential equations (generally hyperbolic partial differential equations.) to formulate the expected traffic flow. representative macroscopic models for traffic flow are lighthill-whitham-richard model [35], aw-rascle model [47], and zhang model [36]. none of the above models can efficiently and accurately those formulate complicated road scenario such as nozzle, merging, diverging, and roundabout, etc. different from above models, the proposed work defines the governing equations for traffic flow using the following partial differential equations: ( ) 0v t       (7.1) (7.2) (7.3) where  (x,t) is the number of vehicles over unit length, v(x,t) is the expected velocity of the vehicle, vmax is the speed limit, a(x) is the cross-section width (or bandwidth) of the road. equation (7.1) is derived from conservation of mass. equation (7.2) ensures that traffic flow slows down up at nozzle and keeps constant speed at fork (illustrated in figure 9). fig. 9 traffic flow through (a) nozzle; (b) fork max ( , ) ( ) log ( ) r x t v a x a x   2dv p v g dt        a hadoop-enabled sensor-oriented information system for knowledge discovery about... 447 as illustrated in figure 10(a), this work acquires the citywide traffic status using electro-optical sensor array mounted on unmanned aerial vehicle (uav). figure 10(b) shows the expected traffic velocity field resulted from the solution of governing equations. the boundary conditions and the coefficient equations for governing equations are obtained according to empirical traffic data. using the expected traffic flow as reference, the observed vehicles can be measured and evaluated. fig. 10 (a) traffic status acquired using uav-mounted optical-electro sensor array; (b) expected traffic flow derived from empirical data and equation (6). 6. macro-cell strategy real-world problem generally involves a large scene such as a metropolitan city, or a huge lake. as a result, a sois-hadoop system should be scalable so as to solve the largescale problems. fig. 11 two partition strategies: (a) euler formation of a transportation network; (b) lagrange formulation of a lake. in this work, a macro-cell strategy, which partitions the global physics domain (or scene) into multiple overlapping/non-overlapping element (cell) and then manipulates them independently [9][10][16][48][49], will be employed to enhance the capability of the sois-hadoop framework to handle large-scale problems. as illustrated in fig. 8, the physics domain (or scene) of interest can be discretized using euler formulation or lagrange formulation [49]. inter-cell communications only occur between neighboring cells and they are only triggered while somewhat anomalous crowd behavior is observed 448 y. liang, c. wu and detected. cell of particular interest will be particularly analyzed using modeling and simulation strategy (which is relatively computationally costly). table 1 lists sample features value about macro-cell-oriented carp aggregation analysis [46] methods. through sufficient training, the addressed system can accurately employ the known cellular features to predict the likelihood of aggregation occurrence through appropriate machine learning methods [50] such as logistic regression, neural network, hidden markov method (hmm), and bayesian learning, etc.[50]. table 1 cell-by-cell analytics of carp aggregation (the lake is divided into 1000 cells). cell id fish density total kinetic energy std (kinetic -energy) entropy aggregation occurs? 1 25.6 77 10.2 10 yes 2 12.7 89 30.98 40 no 3 7.9 101 105 90 … .. … … 10 14 25 133 30 7. conclusion a pilot sois-hadoop system has been set-up and applied in a variety of real-world problems such as the prediction of the aggregation of carp [16] and vehicle traffic analysis [6][9][24]. some preliminary while promising outcomes has achieved. in the near future, we intend to make progress in the following directions: (1) broaden the application of the proposed sensor-oriented information analysis system such as the simulation about the spread of epidemics diseases [16], anomalous pedestrian detection [8][15], and structural health monitoring,, etc.; (2) develop scalable numerical methods in the mathematical modeling of sensor oriented information analysis system: time integration method for the solution of governing equation, domain decomposition method in the finite element method, and polynomial preconditioning, etc.; (3) optimize the exploitation of sensory data using dimensionality reduction (e.g. such as pca) [50]; (4) optimize the cooperative control of sensor asset so as to obtain the optimal observation and high energy efficiency; (5) employ more advanced and accurate mathematical model to formulate the expected behavior about toi. for example, stochastic analysis can be introduced to formulate uncertainty of sois-hadoop framework; and multi-scale modeling can be used to a seamlessly merge microscopic and macroscopic description about toi. acknowledgement: this work is jointly sponsored by the national science foundation (nsf) with proposal number 1240734 (“a design proposal for the center of cyber sensor networks for human and environmental applications”) and 1111542 (“ri: large: collaborative research: a robotic network for locating and removing invasive carp from inland lakes”). the authors would like to thank dr. kimberly kendrick from university of nevada -las vegas (nevada, usa), dr. xiaofang wei from central state university (ohio, usa), mr. darrell barker and ms. olga mendoza-schrock of the sensors directorate in air force research laboratory (ohio, usa) for their support and guidance of this work. a hadoop-enabled sensor-oriented information system for knowledge discovery about... 449 references [1] o. bott, m. marschollek, k.-h. wolf, and r. haux, "towards new scopes: sensor-enhanced regional health information systems-part 1: architectural challenges", meth. inform. med., vol. 46, pp. 476-483, 2007. [2] j. v. c. schneider, information systems today: managing in the digital world. prentice hall, 2015. [3] f. zhao, j. shin, and j. reich, "information-driven dynamic sensor collaboration", ieee signal process. mag., vol. 19, pp. 61-72, 2002. [4] w. m. ulrich, legacy systems: transformation strategies. prentice hall, 2002. [5] s. fernandes, y. liang, s. sritharan, x. wei, and r. kandiah, "real time detection of improvised explosive devices using hyperspectral image analysis", in proceedings of the 2010 ieee national aerospace and electronics conference (naecon 2010). 2010. [6] s. fernandes and y. liang, "chipping and segmentation of target of interest from low-resolution electrooptical data", in proceedings of the spie defense, security, and sensing. 2013, pp. 87440r-87440r-8. [7] k. grolinger, w. a. higashino, a. tiwari, and m. a. capretz, "data management in cloud environments: nosql and newsql data stores", j. cloud. comput. adv. syst. appl., vol. 2, p. 22, 2013. [8] y. liang, w. melvinb, s. fernandesa, m. hendersona, s. i. sritharanc, and d. barkerd, "a crowd motion analysis framework based on analog heat-transfer model", american journal of science and engineering, vol. 2, pp. 33-43, 2013. [9] y. liang, m. henderson, s. fernandes, and j. sanderson, "vehicle tracking and analysis within a city", in proceedings of the spie defense, security, and sensing. 2013, pp. 87510f-87510f-15. [10] y. liang, m. szularz, and l. t. yang, "finite-element-wise domain decomposition iterative solvers with polynomial preconditioning", math. comput. model., vol. 58, pp. 421-437, 2013. [11] a. s. foundation. (2014). hadoop releases. available: http://www.apache.org/ [12] y. liang and c. wu, "a sensor-oriented information system based on hadoop cluster", in proceedings on the international conference on internet computing (icomp). 2014, p. 1. [13] y. liang and c. wu, "an agent-based mathematical model about carp aggregation", in proceedings of the spie sensing technology+ applications. 2015, pp. 94860q-94860q-11. [14] r. c. taylor, "an overview of the hadoop/mapreduce/hbase framework and its current applications in bioinformatics", bmc bioinformatics, vol. 11, p. s1, 2010. [15] y. liang, w. melvin, s. i. sritharan, s. fernandes, and d. barker, "cma-ht: a crowd motion analysis framework based on heat-transfer analog model", in proceedings of the spie defense, security, and sensing. 2012, pp. 84020j-84020j-13. [16] y. liang, z. shi, s. i. sritharan, and h. wan, "simulation of the spread of epidemic disease using persistent surveillance data", in proceeding of comsol 2010, boston, 2010. [17] k. langendoen and n. reijers, "distributed localization in wireless sensor networks: a quantitative comparison", comput. netw., vol. 43, pp. 499-518, 2003. [18] h. qi and j. b. moore, "direct kalman filtering approach for gps/ins integration", ieee trans. aerosp. electron. syst., vol. 38, pp. 687-693, 2002. [19] g. a. bekey, autonomous robots: from biological inspiration to implementation and control. mit press, 2005. [20] g. anastasi, m. conti, m. di francesco, and a. passarella, "energy conservation in wireless sensor networks: a survey", ad hoc networks, vol. 7, pp. 537-568, 2009. [21] t. s. rappaport, wireless communications: principles and practice. vol. 2: prentice hall, 2002. [22] j. n. al-karaki and a. e. kamal, "routing techniques in wireless sensor networks: a survey", ieee wireless commun., vol. 11, pp. 6-28, 2004. [23] y. liang, j. weston, and m. szularz, "generalized least-squares polynomial preconditioners for symmetric indefinite linear equations", parallel. comput., vol. 28, pp. 323-341, 2002. [24] j. sanderson and y. liang, "no-reference image quality measurement for low-resolution images", in spie defense, security, and sensing. 2013, pp. 874404-874404-17. [25] w. ren and r. w. beard, distributed consensus in multi-vehicle cooperative control. springer, 2008. [26] s. camazine, self-organization in biological systems. princeton university press, 2003. [27] i. d. couzin, j. krause, r. james, g. d. ruxton, and n. r. franks, "collective memory and spatial sorting in animal groups", j. theor. biol., vol. 218, pp. 1-11, 2002. [28] a. deutsch and s. dormann, cellular automaton modeling of biological pattern formation. 2005. [29] a. huth and c. wissel, "the simulation of the movement of fish schools", j. theor. biol., vol. 156, pp. 365-385, 1992. [30] p. b. johnsen and a. d. hasler, "winter aggregations of carp (cyprinus carpio) as revealed by ultrasonic tracking", trans. am. fish. soc., vol. 106, pp. 556-559, 1977. [31] r. jullien and r. botet, aggregation and fractal aggregates. world scientific pub co inc, 1987. [32] s. stöcker, "models for tuna school formation", math. biosci., vol. 156, pp. 167-190, 1999. http://www.apache.org/ 450 y. liang, c. wu [33] t. vicsek, a. czirók, e. ben-jacob, i. cohen, and o. shochet, "novel type of phase transition in a system of self-driven particles", phys. rev. lett., vol. 75, p. 1226, 1995. [34] m. bando, k. hasebe, a. nakayama, a. shibata, and y. sugiyama, "dynamical model of traffic congestion and numerical simulation", phys. rev. e: stat., nonlinear, soft matter phys., vol. 51, p. 1035, 1995. [35] m. j. lighthill and g. b. whitham, "on kinematic waves. ii. a theory of traffic flow on long crowded roads", in proceedings of the royal society of london a: mathematical, physical and engineering sciences. 1955, pp. 317-345. [36] h. m. zhang, "a mathematical theory of traffic hysteresis", transport. res. b-meth., vol. 33, pp. 1-23, 1999. [37] a. c. r. c. committee, "asian carp control strategy framework", 2013. [38] e. h. buck, h. f. upton, c. v. stern, and j. e. nicols, "asian carp and the great lakes region", 2010. [39] j. rosenfeld, "assessing the habitat requirements of stream fishes: an overview and evaluation of different approaches", trans. am. fish. soc., vol. 132, pp. 953-968, 2003. [40] r. naylor, s. williams, and d. strong, "aquaculture-a gateway for exotic species", science (wash.), vol. 294, pp. 1655-1656, 2001. [41] r. goldburg, m. s. elliott, r. naylor, and p. o. commission, marine aquaculture in the united states: environmental impacts and policy options. pew oceans commission, 2001. [42] t. m. koel, k. s. irons, and e. n. ratcliff, "asian carp invasion of the upper mississippi river system", us department of the interior, us geological survey, upper midwest environmental sciences center, 2000. [43] p. bajer, c. chizinski, and p. sorensen, "using the judas technique to locate and remove wintertime aggregations of invasive common carp", fish. manage. ecol., vol. 18, pp. 497-505, 2011. [44] a. r. leach, molecular modelling: principles and applications. prentice hall, 2001. [45] a. czirók, m. vicsek, and t. vicsek, "collective motion of organisms in three dimensions", physica. a., vol. 264, pp. 299-304, 1999. [46] c. w. reynolds, "flocks, herds and schools: a distributed behavioral model", in acm siggraph computer graphics. 1987, pp. 25-34. [47] a. aw and m. rascle, "resurrection of" second order" models of traffic flow", siam journal on applied mathematics, vol. 60, pp. 916-938, 2000. [48] y. liang, the use of parallel polynomial preconditioners: in the solution of systems of linear equations. lap lambert academic publishing, 2013. [49] a. toselli and o. widlund, domain decomposition methods: algorithms and theory. vol. 3: springer, 2005. [50] s. theodoridis, machine learning: a bayesian and optimization perspective. academic press, 2015. instruction facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 51 61 https://doi.org/10.2298/fuee1801051j feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives  kosta jovanović 1 , branko lukić 1 , veljko potkonjak 2 1 laboratory for robotics etf robotics, school of electrical engineering, university of belgrade, serbia 2 school of information technologies, metropolitan university, belgrade, serbia abstract. to ensure safe human-robot interaction impedance robot control has arisen as one of the key challenges in robotics. this paper elaborates control of bidirectional antagonistic drives – qbmove maker pro. due to its mechanical structure, both position and stiffness of bidirectional antagonistic drives could be controlled independently. to that end, we applied feedback linearization. feedback linearization based approach initially decouples systems in two linear single-input-single-output subsystems: position subsystem and stiffness subsystem. the paper elaborates preconditions for feedback linearization and its implementation. the paper presents simulation results that prove the concept but points out application issues due to the complex mechanical structure of the bidirectional antagonistic drives. key words: bidirectional antagonistic drives, variable stiffness actuators, pullerfollower control, stiffness control. 1. introduction this paper presents a further elaboration of the approach for stiffness control of classical antagonistic drives in robotics [1] 1 to bidirectional antagonistic drives. the long term desire of scientists to design and build a faithful copy of a human being finally coincides with the latest efforts of in-house service robotics how to design a robot which fully matches the house environment. because humans shape their living environment to fully meet their comfort and necessities, home robots have to be built to fit such areas and therefore they must move and behave in the same manner as humans. received november 16, 2016; received in revised form may 4, 2017 corresponding author: kosta jovanović laboratory for robotics etf robotics, school of electrical engineering, university of belgrade, 11000 belgrade, serbia (e-mail: kostaj@etf.rs) *an initial research related to this paper received best paper award at 3rdinternational conference on electrical, electronic and computing engineering (icetran ’16) – section robotics and flexible automation [1]. 52 k. jovanović, b. lukić, v. potkonjak therefore, there are numbers of actual research projects with the ultimate goal of creating musculoskeletal (or so-called anthropomimetic robots [2], [3]). the most popular among them are famous japanese robot kenshiro [4] and eccerobot as an anthropomimetic robot of european consortium [5]. following the anthropomimetic approach, key issues are human-like actuators and their control. the design of an anthropomimetic actuator has to follow guidelines set by its human paragon: it should be tendon driven, compliant (of changeable compliance vsa) and therefore it has to be driven by at least two motors – to control both position and compliance (opposite of stiffness). the control of such drives, which are inevitably multivariable and non-linear, has to be reliable, safe and robust. this paper presents one instance of a bio-inspired robotic drive of changeable stiffness – bidirectional qbmove maker pro, and an approach to control such drive initially based on our work on puller-follower approach [6]. a brief overview of bidirectional antagonistic joints in robotics, as well as our target one, is given in section 2. special attention of our group from robotics laboratory at the school of electrical engineering, university of belgrade, is paid to the control of novel bioinspired robot actuators in general and the control of bidirectional antagonistic drives as one of the instances available in the laboratory. generalized puller-follower approach based on feedback linearization to the control of qbmove maker pro is introduced in section 3. the validity of the proposed control algorithm is proven via simulation in section 4. section 5 brings conclusions about a prospective application of the proposed methodology, gives tips for future work and points out the already tested alternative approaches for stiffness control of bidirectional antagonistic drives. 2. bidirectional antagonistic drives qbmove maker pro a subgroup of vsas that mimics biological paragon of mammals is antagonistic actuators. although classical antagonistic actuation is the prime example of a fully biologically inspired actuation, lately, the engineers turned to bidirectional antagonistic actuation as a big step towards real antagonistic actuation. the most significant advantage of bidirectional antagonistic actuation is bidirectional torque achieved by two antagonistically coupled motors. namely, both motors could either pull or push, contrary to classical antagonistic, tendon driven actuators and human muscles. therefore, slacking of the tendons is not possible, and controllability of such drives is ensured. pioneering works in antagonistic actuation exploited intrinsic compliance of hydraulic and pneumatic actuators as antagonistically coupled drives. therefore, the first widely known implementation of antagonistic drives were: the utah/m.i.t. dexterous hand [7], mckibben pneumatic artificial muscles in antagonistic arrangements [8] such as work of tondu et al. [9] or boblan et al. [10], biped walking robots with antagonistically actuated joints at waseda university [11], or european pneumatic biped lucy build at vrije university of brussels [12]. in parallel, electric drives have been gradually developed and prevailed in antagonistic drives due to control issues when pneumatic actuators are employed [13]. to achieve variable stiffness, non-linear tendon transmission has to be designed [14]. the non-linear transmission could be obtained either by placing non-linear elastic elements ([15] and [16]) or placing linear elastic elements with a controlled system feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives 53 dedicated to shaping non-linearity in transmission. the latter approach was employed by migliore [17], hurst [18], and tonietti [19]. in this research we opted for the first approach. although vsa is a topic of an increasing importance towards safe human-robot interaction, a limited number of vsa is available on the market due to high costs and complex mechanical design. with an idea to bring an instance of such compliant actuator to a broad audience, to researchers and academy, the natural motion initiative [20] developed qbmove maker series of the actuator. their latest prototype, qbmove maker pro is a lowcost 3d printed bidirectional spring antagonistic actuator design which is affordable and it has all features of bidirectional antagonistic vsa. all parts of the actuator are on-the-shelf and could be either purchased from the natural motion initiative or their models could be downloaded from the internet free-of-charge. furthermore, all software dedicated to realtime control of qbmove maker pro is open source [21]. a prototype of qbmove maker pro actuator and its functional scheme are depicted in fig.1. therefore, both motors can contribute to the overall shaft torque symmetrically. this is the basic difference when compared to the traditional antagonistic structure where each motor can contribute only in one direction due to a pulling constraint. joint shaft and motors are coupled via non-linear springs. the non-linear force-deflection characteristic is of fundamental importance since it enables variable stiffness of the joint which depends on spring pretensions [17]. experiments which confirm this non-linear coupling are given in [22]. fig. 1 qbmove maker pro: prototype (left), functional scheme (right) a mathematical model of qbmove maker pro actuator is given by equations (1) (7). non-linearity in force-deflection characteristics causes that relatively small displacement of motors positions and/or output shaft induces a significant change in stiffness for high stiffness values. equation (1) describes joint/shaft dynamics, equation (2)-(3) stands for motor dynamics. resulting driving torques are given by (4)-(7). ( ) ̈ ( ̇) ̇ ̇ ( ) ( ) (1) ̈ ̇ ( ) (2) ̈ ̇ ( ) (3) ( ) ( ) ( ) (4) 54 k. jovanović, b. lukić, v. potkonjak ( ) ( ( )) (5) ( ) ( ( )) (6) ( ) ( ( )) ( ( )) (7) actuator dynamics is specified by shaft inertia ( ), velocity related terms (centrifugal and coriolis) ( ̇) ̇, viscous damping , gravity load ( ), and overall actuator torque ( ) as a sum of both bidirectional antagonistic tendon/drive torques ( ) and ( ). the bidirectional antagonistic drives are assumed to be symmetric with inertia – and damping term – . note that non-linearity in the transmission given by (5) and (6) is a prerequisite for variable stiffness of qbmove maker pro actuator. since both drives influence actuator position as well as actuator stiffness, decoupling of position and stiffness subsystem is demanding control challenge which is considered in this paper. since our final goal to control joint stiffness, let us briefly recall the definition of joint stiffness equivalent to the stiffness of a translational spring. the force acting on the spring depends on its extension and this static dependence is defined as the spring stiffness ⁄ . thus, the spring of length in its equilibrium position ( ) stays undeformed, whereas if the spring is extended to a length , it generates force . if this relation is linear, then we consider the spring as linear (8) and the stiffness is constant. otherwise, the spring is considered as non-linear (9) and the stiffness is variable. likewise, the stiffness of the robot joint (usually denoted in the literature as ⁄ ) is defined by (10), where stands for the torque generated in the joint and denotes the joint position. ( ) ⁄ (8) ( ) ( ) ( ) ⁄ (9) (10) analogously, joint stiffness can be constant or changeable which is a desirable feature from an exploitation point of view since it enables tradeoffs between safe and precise manipulation. since we focus on robot joints that exploit antagonism, the stiffness of such joints is presented in accordance with the source of mechanical stiffness in antagonistically coupled tendons. therefore, the overall shaft/joint stiffness of qbmove maker pro actuator is estimated as follows in (11). for unloaded shaft, equilibrium position is given by (12). ( ) ( ( )) ( ( )) (11) (12) feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives 55 3. feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives since both bidirectional antagonistic motors contribute to joint position and joint stiffness, static feedback linearization is employed to decouple this multivariable system into two decoupled and linearized single-input-single-output systems. the original system can be written in state-space representation (13). ̇ ( ) ( ) (13) here, joint and motor positions and velocities are considered as state space variables ̇ ̇ ̇ , while motor torques are considered as control inputs. joint position and overall joint stiffness are outputs: . by straightforward application of feedback linearization [23], outputs and were differentiated until a linear relation to inputs and/or was obtained. to that end, outputs and were differentiated four times (14) and two times (15) respectively. since the sum of the relative degrees (=4+2) of the outputs was equal to the state dimension of the system (=6), zero dynamics does not exist and all states are fully observable. ( ) ( ) (14) ( ) ( ) (15) ( ) denotes lie derivative of ( ) along vector function ( ). lie derivatives in cases of position and stiffness of the model representing qbmove maker pro are depicted in (16) and (17) respectively. decoupling the matrix ( ), defined as in (18), has to be non-singular to prove controllability of the system, which is always valid for positive joint stiffness. at the same time, this is the second precondition for the application of static feedback linearization. for the sake of simplicity, the following notation is adopted: ( ( )), ( ( – )), ( ( )), and ( ( )). ( ( ( ) ) ( ̇ ̇) ( ( ) ) ( ̇ ̇) ) (16) ( ( ( ) ) ( ̇ ̇) ( ( ) ) ( ̇ ̇) ) (17) 56 k. jovanović, b. lukić, v. potkonjak [ ] [ ] (18) finally, in accordance to [23], original input can be transformed as in (19) to achieve independent control of both the joint position and stiffness via the newly-defined intermediate input [ ] . the result of this input transformation is two linear single-input-single-output systems controlled by intermediate input which can be written in linear state space form (20). new state vector contains all output derivatives up to the highest order [ ̇ ̈ ( ) ̇] . ( * ( ) ( ) + * +) (19) ̇ (20) from (14) through (20) follows that ( ) ( ) [ ] . thus, if we choose as the desired joint position and as the desired joint stiffness, a basic control law (21) can be applied. accordingly, state feedback linearization allows control of both the positions and stiffness of the bidirectional antagonistic robot joint, using two totally independent linear controllers, composed of static state feedback and feed-forward action. as demonstrated in [24] and [25], the stability of the proposed control methodology (21) is ensured if the gains in are chosen so the polynomials depicted in (22) are hurwitz's. ( ) ( ( ) ( )) ( ̈ ( )) ( ̇ ( )) ( ( )) ̈ ( ̇ ( )) ( ( )) (21) (22) theoretically, if the desired joint positions and stiffness are smooth trajectory, asymptotic trajectory/force tracking is possible. in this paper, the desired trajectories are set manually without considering higher control levels and optimization issues. an illustrative scheme of the proposed algorithm is depicted in fig 2. feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives 57 fig. 2 decoupled position/stiffness control scheme for qbmove maker pro actuator 4. results and discussion the mathematical model (presented in section 2) and the presented control approach (section 3) are implemented in user-defined dedicated matlab/simulink model. the validation of the proposed approach is given in fig 3 through fig 6. fig 3 presents joint position tracking the desired trajectory combines an interval of smooth increase in position for ⁄ and sine trajectory with an amplitude of ⁄ . desired and achieved stiffness are depicted in fig 4. desired stiffness comprises flat and sine part of an amplitude of which is in accordance with desired trajectory to demonstrate simultaneous control of both joint position and stiffness for different trajectory patterns. theoretically, as elaborated by palli et al. [24], [25], if the desired joint positions are continuous up to the 4 th order ( ) , and the stiffness is planned to be continuous up to the 2 nd order ( ) , asymptotic trajectory/ force tracking is achieved. fig 5 presents coordinated actions of two antagonistically coupled motors which contribute to the joint position but also stiffness. one can see that while the desired stiffness is constant ( ) both motors move in the same direction equally contributing to the joint position which follows its pattern. when stiffness starts changing its value motors act as follows: when joint stiffen (rise in stiffness) motors move in opposing directions while a decrease in joint stiffness results in a decrease in the difference in antagonistic motor positions. the overall resulting joint torque is depicted in fig 6 which fits the pattern of the desired joint trajectory. demonstrated results are obtained for parameters adopted as shown in table 1. control parameters (23) and (24) are adopted from [6]. ( )( ) ( ) ( ) (23) ( ) (24) 58 k. jovanović, b. lukić, v. potkonjak table 1 simulation parameters label numerical value unit description 0.000003 motor inertia 0.015 joint inertia 0.000001 [ s/rad] motor damping 0 [ s/rad] joint damping 6.7328 spring coefficient 0.0227 spring coefficient fig. 3 joint position tracking fig. 4 joint stiffness tracking feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives 59 fig. 5 positions of bidirectional antagonistically coupled motors fig. 6 resulting joint torque as contribution of both bidirectional antagonistically coupled motors 5. conclusion the paper elaborated exploitation of the stiffness control method proposed in [1] to robot joint driven by a bidirectional antagonistic actuators qbmove maker pro actuator. therefore, an increasing topic of variable stiffness actuation was presented. the approach which enables simultaneous decoupled control of joint position and joint stiffness was demonstrated. the concept is validated through simulations. 60 k. jovanović, b. lukić, v. potkonjak however, the key issue in the implementation of this feedback linearization based control approach is model dependence. the model itself is very complex and non-linear, so model identification must be considered comprehensively before the approach is used. moreover, it is well known that systems that are linearized by decomposing their structure to two or more linear subsystems are prone to behave erratically when disturbed. the robustness of the presented approach is discussed by authors’ previous work [6]. to overcome the dependence on the model, alternative approaches to simultaneous position/ stiffness control of bidirectional antagonistic drives were pointed out in authors’ previous works [27] and [28], while neural networks for system modeling and feed-forward control were presented in [29]. future work on the topic will consider the implementation of the proposed approach for stiffness control on the laboratory setup driven by qbmove maker pro actuators, on a model-based multi-jointed robot with bidirectional antagonistic drives, as well as its implementation for cartesian stiffness control. an ultimate goal of this research is the development of a control scheme which should shape cartesian stiffness by symbiosis of joint stiffness control and posture planning of the robot. acknowledgment: research leading to these results was funded by the ministry of education, science and technological development, republic of serbia, under contract tr-35003. references [1] k. jovanovic, b. lukic, v. potkonjak, “enhanced puller-follower approach for stiffness control of antagonistically actuated joints”, in proceedings of international conference on electrical, electronic and computing engineering (icetran ’16), 13-16 jun 2016, pp. roi1.2.1-5. [2] a. diamond, r. knight, d. devereux, o. holland, "anthropomimetic robots: concept, construction and modelling," international journal of advanced robotic systems, vol. 9, no. 209, pp. 1-14, 2012. [3] k. jovanovic, v. potkonjak, o. holland, "dynamic modelling of an anthropomimetic robot in contact tasks," advanced robotics, vol. 28, no. 11, pp. 793-806, 2014. [4] y. nakanishi, s. ohta, t. shirai, y. asano, t. kozuki, y. kakehashi, h. mizoguchi, t. kurotobi, y. motegi, k. sasabuchi, j. urata, k. okada, i. mizuuchi, m. inaba, "design approach of biologicallyinspired musculoskeletal humanoids", international journal of advanced robotics systems, vol. 10, no. 216, pp. 1-13, 2013. [5] s. wittmeier, c. alessandro, n. bascarevic, k. dalamagkidis, a. diamond, m. jäntsch, k. jovanovic, r. knight, h. g. marques, p. milosavljevic, b. svetozarevic, v. potkonjak, r. pfeifer, a. knoll, o. holland, "toward anthropomimetic robotics: development, simulation, and control of a musculoskeletal torso", artificial life, vol. 19, no. 1, pp. 171-193, 2013. [6] v. potkonjak, b. svetozarevic, k. jovanovic, o. holland, "the puller-follower control of compliant and noncompliant antagonistic tendon drives in robotic system", international journal of advanced robotics systems, vol. 8, no. 5, pp. 143-155, 2012. [7] s. c. jacobsen, e. k. iversen, d. knutti, r. johnson, k. biggers, "design of the utah/m.i.t. dextrous hand", in proceedings of ieee international conference on robotics and automation (icra 1986), san francisco, ca, usa, 7-10 april 1986. pp. 1520-1532. [8] g. c. klute, j. m. czerniecki, b. hannaford, "mckibben artificial muscles: pneumatic actuators with biomechanical intelligence", in proceedings of ieee/asme international conference on advanced intelligent mechatronics, atlanta, ga, usa, 19-23 september 1999, pp. 221-226. [9] b. tondu, s. ippolito, j. guiochet, a. daidie, "a seven-degrees-of-freedom robotarm driven by pneumatic artificial muscles for humanoid robots", the international journal of robotics research, vol. 24, no. 4, pp. 257-274, 2005. [10] i. boblan, j. maschuw, d. engelhardt, a. schulz, h. schwenk, r. bannasch, i. rechenberg, "a humanlike robot hand and arm with fluidic muscles: modelling of a muscle driven joint with an antagonistic feedback linearization for decoupled position/stiffness control of bidirectional antagonistic drives 61 setup", in proceedings of international symposium on adaptive motion in animals and machines, ilmenau, germany, 25-30 september 2005. [11] j. yamaguchi, d. nishino, a. takanishi, "realization of dynamic biped walking varying joint stiffness using antagonistic driven joints", in proceedings of ieee international conference on robotics and automation (icra 1998), leuven, belgium, 16-20 may 1998, pp. 2022-2029. [12] b. verrelst, r. van ham, b. vanderborght, f. daerden, d. lefeber, "the pneumatic biped "lucy" actuated with pleated pneumatic artificial muscles", autonomous robots, vol. 18, no. 2, pp. 201-213, 2005. [13] s. ĉajetinac, d. šešlija, v. nikolić, m. todorović, "comparison of pwm control of pneumatic actuator based on energy efficiency", facta universitatis, series: electronics and energetics, vol. 25, no. 2, pp. 93-101, 2012. [14] r. van ham, t. sugar, b. vanderborght, k. hollander, d. lefeber, "compliant actuator design: review of actuator with passive adjustable compliance/controllable stiffness for robotic applications", ieee robotics & automation magazine, vol. 13, no. 3, pp. 771-789, 2009. [15] k. koganezawa, y. watanabe, n. shimizu, "stiffness and angle control of antagonistically driven joint", advanced robotics, vol. 12, no. 7-8, pp. 81-94, 1997. [16] c. english, d. russell, "implementation of variable joint stiffness through antagonistic actuation using rolamite springs", mechanism and machine theory, vol. 34, no. 1, pp. 27-40, 1999. [17] s. migliore, e. brown, s. deweerth, "biologically inspired joint stiffness control", in proceedings of ieee international conference on robotics and automation (icra ’05), 18-22 april 2005, pp. 4508-4513. [18] j. hurst, j. chestnutt, a. rizzi , "an actuator with physically variable stiffness for highly dynamic legged locomotion", in proceedings of ieee international conference on robotics and automation (icra 2004), new orleans, la, usa, 26 april-1 may 2004, pp. 4662-4667. [19] g. tonietti, r. schiavi, a. bicchi, "design and control of a variable stiffness actuator for safe and fast physical human/robot interaction", in proceedings of ieee international conference on robotics and automation (icra 2005), barcelona, spain, 18-22 april 2005. pp. 526-531. [20] m. catalano, g. grioli, m. garabini, f. bonomo, m. mancini, n. tsagarakis and a. bicchi, “vsa-cubebot: a modular variable stiffness platform for multiple degrees of freedom robots”, in proceedings of ieee international conference on robotics and automation (icra ’11), 9-13 may 2011. pp. 5090 5095. [21] natural motion machine initiative (nmmi) [qbmove maker pro assembly guide], last accessed november 13th, 2016 – https://sourceforge.net/projects/nmmiwebsite/files/qbmovev01/assembly%20guide%20v01.pdf/ download [22] k. melo, m. garabini, g. grioli, m. catalano, l. malagia, a. bicchi, “open source vsa-cubebots for rapid soft robot prototyping”, robot makers workshop in conjunction with 2014 robotics science and systems conference, berkeley, california, usa, july 12, 2014. [23] h. k khalil, "chapter 13: state feedback stabilization," in nonlinear systems, 3rd edition, upper saddle river, new jersey, usa, prentice hall, 2002, pp. 197-227. [24] g. palli, c. melchiorri, a. de luca, "on the feedback linearization of robots with variable joint stiffness", in proceedings of ieee international conference on robotics and automation (icra 2008), pasadena, ca, usa, 19-23 may 2008. pp. 1753-1759. [25] g. palli, c. melchiorri, t. wimböck, m. grebenstein, g. hirzinger, "feedback linearization and simultaneous stiffness-position control of robots with antagonistic actuated joints", in proceedings of ieee international conference on robotics and automation (icra '07), rome, italy, 10-14 april 2007. pp. 4367-4372. [26] b. lukić, k. jovanović, a, rakić, “realization and comparative analysis of coupled and decoupled control methods for bidirectional antagonistic drives: qbmove maker pro,” presentedat the 3rd international conference on electrical, electronic and computing engineering (icetran 2016), zlatibor, serbia, jun 13-16, 2016. [27] b. lukić, k. jovanović, “minimal energy cartesian impedance control of robot with bidirectional antagonistic drives,” in proceedings of the iftomm/ieee/eurobotics 25th international conference on robotics inalpe-adria-danube region – raad 2016, belgrade, june 30th july 2nd 2016. [28] b. lukić, k. jovanović, g. kvašĉev, “feedforward neural network for controlling qbmove maker pro variable stiffness actuator”, in proceedings of the 13th symposium on neural networks applications in electrical engineering (neurel 2016), belgrade, serbia, november, 2016. facta universitatis series: electronics and energetics vol. 32, no 1, march 2019, pp. 129-145 https://doi.org/10.2298/fuee1901129v fpga implementation of modified elliptic curve digital signature algorithm kamalakannan venkataraman, tamilselvan sadasivam department of electronics and communication engineering, pondicherry engineering college, pillaichavady, puducherry, india abstract. with rapid deployment of internet-of-things (iot) devices, security issues related to data transmitted between the devices increases. thus the integrity of perceptual layer devices is of utmost importance to secure the information being transmitted between the devices. in a secured information system, digital signature generation and verification processes are entirely different from data encryption and decryption processes. digital signatures are rapidly emerging due to the problems related to data integrity thus playing a crucial role in the authentication process by enabling the sender to attach a signature to the encrypted message. based on the devices it is beneficial to select an algorithm showing favorable behavior, therefore keccak-f [1600] algorithm is best suited for devices having area and cost constraints. in this paper, implementation of the original elliptic curve digital signature algorithm and its variants are considered and evaluated in terms of the security level and computational cost. here the modified ecdsa scheme concepts related to signature generation and verification are similar to the original ecdsa scheme. the computational cost of the modified ecdsa is reduced by removing inverse operation in key generation and signing phase, also problems related to signature being forged are resolved using hidden generator point concept. hence the modified ecdsa is more secure with less computational cost when implemented on fpga using verilog hdl. therefore, this algorithm can be applied for the devices being connected in perceptual layer of the iot. key words: internet of things, elliptic curve cryptography, elliptic curve digital signature algorithm, secured hash algorithm, keccak 1. introduction the internet of things (iot) represents a network of independent devices interconnected globally. in the iot enormous amounts of information have to be communicated, stored, processed and analyzed securely. securing these pieces of information is one of the fundamental challenges in the iot. many iot products consist of inexpensive components received june 20, 2018; received in revised form september 26, 2018 corresponding author: kamalakannan venkataraman department of electronics and communication engineering, pondicherry engineering college, pillaichavady, puducherry, india (e-mail: vkamalakannan@pec.edu) 130 v. kamalakannan, s. tamilselvan with limited memory and computational resources. such devices might be unable to support the computationally intense cryptographic functions of asymmetrical cryptography. if designers considered the privacy implications of unencrypted data, they have limited options for encryption because of this hardware platform. therefore the designers have to create their own security protocols. as it is known cryptography is the branch of cryptology dealing with the design of algorithms for encryption and decryption, intended to ensure the secrecy and/or authenticity of message [1]. in 1985 neal koblitz and victor s. suggested that the public key cryptography relates to the algebraic structure of elliptic curve (ec) over finite fields. the digital signature algorithm (dsa) was proposed in august 1991 by the u.s. national institute of standards and technology (nist) and was specified in a u.s. government federal information processing standard (fips) 186 called the digital signature standard (dss). in 1992 scott vanstone proposed elliptic curve digital signature algorithm (ecdsa) because nist requested public comment related to dss proposal. in 1998 it was accepted as iso 14888-3 standard by international standards organization (iso) and in 1999 it was accepted as ansi x9.62 standard by american national standard institute (ansi). in 2000 it was accepted as ieee 1363-2000 standard by institute of electrical and electronics engineers (ieee) and fips 186-2 standard by federal information processing standards (fips). elliptic curve cryptography (ecc) is a public cryptography that has a mathematical advantage when compared to rivest shamir adleman (rsa) as it requires full exponential time for solving elliptic curve discrete logarithmic problem (ecdlp). the ecdlp is distributed over points on the elliptic curve (ec). a digital signature is generally an authentication process that enables the sender to attach a signature to a message, thus comprises of digital signature generation and digital signature verification processes [2]. the integrity of the message is guaranteed because the digital signatures detects and stops unauthorized users from modifying the data and also authenticates the identity of the signatory. generally, the ecdsa is an elliptic curve variant of the dsa and it gives cryptographically strong digital signatures due to ecdlp concept. here keccak-f [1600], recognized as a new secure hash algorithm-3, i.e. sha-3 by nist is considered in the digital signature generation and the digital signature verification processes [3]. here the complexity of digital signature generation and digital signature verification is also analyzed to stop the attacker attempting to forge the signature. in this paper the analysis of the original ecdsa and its variants are considered and evaluated in terms of the implementation area, security level and speed of execution. based on these analysis a modified ecdsa method is designed and implemented on fpga for iot devices. this section gives a brief introduction about the paper. section 2 and section 3 give an overview of elliptic curve cryptography and secured hash algorithm-3 keccak. section 4 gives a detailed description of original ecdsa scheme, its security proofs and an attack possible on original ecdsa scheme. section 5 describes modified ecdsa suitable for signer with limited computation capability and a method to solve forging problem using initialization and authorization stage. section 6 provides comparison of ecdsa schemes, whereas section 7 explains implementation and synthesis of ecdsa. the result analysis of ecdsa and its variant are given in section 8 with conclusions drawn in section 9 followed byreferences. fpga implementation of modified elliptic curve digital signature algorithm 131 2. elliptic curve cryptography elliptic curves have been studied for centuries by mathematicians, therefore have a very rich history. ecc is the foremost choice in public key schemes due to its smaller key size [4], [13]. the key length of ecc is considerably shorter than that of rsa, but it achieves the same level of security of rsa. generally, ec are of two finite fields; fields of odd characteristic fp, where p is a large prime number, and fields of characteristic two f2 m , where 2 m is a large binary value. when the distinction is not important, denote both of them as fq, where n = p or n = 2 m . an ec is the set of solutions (x, y) to weierstrass equation. an elliptic curve e over a field k is defined by an eq. (1) as e (k): y 2 + a1xy + a3y = x 3 + a2x 2 + a4x + a6 (1) where the coeffients a1, a2, a3, a4, a6 ∈ k. the curve e is nonsingular or smooth and is an elliptic curve if and only if the discriminant of e, ∆e is nonzero. the weierstrass equation has been transformed to the elliptic curve called a short weierstrass curve, where a, b ∈ k. we assume that the characteristic of k ≠ 2, 3 and the discriminant of short weierstrass curve is given in eq. (2) as ∆ = − (4a 3 + 27b 2 ) (2) 3. secure hash algorithm-3 keccak has a different structure when compared to other hash functions. secure hash algorithm-3 keccak was selected because in 2004 sha-1 was found to be weak, and the threat was carried to sha-2 also. successful attacks have been reported in the algorithms sha-0 and sha-1, which generate collisions, which influences the principle of hash functions, which is to ensure the information integrity. the function sha-2 is currently still safe, but as sharing a similar structure with its predecessor, the sha-1, becomes suspicious and raises doubts about its safety stimulated the scientific community to search a successor more robust and secure. the sha-3 was focused in the information secure area and was more robust and secure. the keccak architecture is as shown in the fig. 1 consisting of preprocessing and the sponge construction [5]. fig 1 high-level view on keccak 132 v. kamalakannan, s. tamilselvan in the pre-processing construction the message is spliced into blocks with necessary padding. in the sponge construction absorbing (or input) phase and squeezing (or output) phases are present as shown in fig. 2. fig. 2 absorbing and squeezing phases of the sponge construction in the absorption phase the block data are applied to the algorithm for processing. in the squeezing phase the processed data is squeezed out based on the configurable length. the function keccak-f is used in both phases. it reads the input blocks xi, and generates the output blocks yj allowing arbitrary-length outputs y0···yu. the security level of keccak has to be configured with several parameters related to the input and output sizes. the parameter b to be configured is the width of the state depending on the exponent l i.e., b = r + c = 25(2 l ), where l = 0,1,..,6, having width of b ∈{25,50,100,200,400,800,1600}, r is the bit rate and c is called the capacity. the function keccak-f referred to as keccak-f permutation is the main part in hash algorithm and is used in both absorbing phase and squeezing phase. the keccak-f structure is shown in fig 3. there are nr rounds in the function, here each round has an input b bits. the parameter l influences the number of rounds specified in eq. (3) as nr = 12+2l (3) fig. 3 internal structure of function keccak the number of rounds required for the respective state width is provided in table 1. any instance of the keccak sponge function family makes use of one of the seven keccak-f permutations, denoted keccak-f[b], where b ϵ {25, 50, 100, 200, 400, 800, 1600} is the width of the permutation. fpga implementation of modified elliptic curve digital signature algorithm 133 table 1 number of rounds within keccak-f state width b [bits] # rounds nr 25 50 100 200 400 800 1600 12 14 16 18 20 22 24 these keccak-f permutations are iterated constructions consisting of a sequence of almost identical rounds. the number of rounds nr depends on the permutation width, and is given by nr = 12 + 2ℓ, where 2 ℓ = b/25. this gives 24 rounds for keccak-f [1600]. thus referring the table 1 the sha-3 keccak repeats 24 rounds, each round consists of five steps in sequence manipulating the entire state  step 1 step this function consists of three equations involving simple xor and bitwise cyclic shift operations. [ ] [ ] [ ] [ ] [ ] [ ] (4) [ ] [ ] ( [ ]) (5) [ ] [ ] [ ] (6) theta step involves xor-ing between the input state matrix from eq. (4) and output lanes obtained from eq. (5) to generate eq. (6).  step 2 step [ ] [ ]( [ ]) (7) here steps rho (ρ) and pi (π) together calculates a 5x5 array “b”. the operation of rho (ρ) and pi (π) take the state array “c” and perform circular rotation on each of the 25 lanes by a fixed number to obtain array “d” in eq. (7).  step 3 step [ ] [ ] ( [ ] [ ]) (8) in this step operation on the lanes, the d array obtained in the previous steps is manipulated and the results are replaced in the state array “s” illustrated in the eq. (8).  step 4 step in the iota ( step specified in eq. (9) the xor operation is performed for rc round constant specific for each of the 24 rounds of keccak-f[1600] with the lane at location [0, 0] of the new state matrix “s”. [ ] [ ] [ ] (9) 4. elliptic curve digital signature algorithm in 1992 scott vanstone proposed ecdsa because nist requested public comment related to dss proposal [6]. in 1998 it was accepted as iso 14888-3 standard by international standards organization (iso). the ecdsa is an elliptic curve variant of 134 v. kamalakannan, s. tamilselvan the dsa and because of ecdlp generates a cryptographically strong digital signatures. the integrity plays a critical role to safeguard data inside the network as shown in fig 4. sender bob generates a signature to be added with the message before transmission. at the other end receiver alice verifies the signature, in order to receive the message [7]. fig. 4 digital signature process ecdsa has been established as an efficient algorithm against cyberattacks and are characterized by their speed to generate and verify the signature. ecdsa consists of 3 phases: key generation, signature generation and signature verification. these three phases are explained in the following sub-sections. 4.1. ecdsa key generation to generate a public and private key sender performs the following steps step 1: select a random integer da ∈ [1, p-1] step 2: computes the public key qa = dag. 4.2. ecdsa signature generation using the sender‟s private key da and public key qa step 1: select an integer k ∈ [1, p − 1] step 2: compute h = hash (m) = sha-3 (m) step 3: calculate kg= (x1, y1) step 4: compute r = x1 (mod p), if r = 0, go to step 2 step 5: compute s = k -1 (h + da r) (mod p). if s = 0, go to step 2 the signature pair generated is (r, s) 4.3. ecdsa signature verification using public key qa and sender‟s signature (r, s) step 1: verify that r and s ∈ [1, p − 1]. if not, the signature is invalid step 2: compute h = hash (m) = sha-3 (m) step 3: compute w = s -1 (mod p) step 4: compute u1 = hw (mod p) and u2 = rw (mod p) step 5: compute (x2, y2) = u1g + u2qa step 6: compute v = x2(mod p) fpga implementation of modified elliptic curve digital signature algorithm 135 4.4. proof of ecdsa scheme step 1: compute s = k -1 (h + da r) mod p on rearranging step 2: compute k = s -1 (h + da r) step 3: compute kg = s −1 (h + da r) g = (x1, y1) step 4: compute kg = s −1 hg + s −1 da r g step 5: compute kg = w h g + r w qa where w = s −1 (mod p) and qa = da g (mod p) step 6: compute kg = u1 g + u2 qs = (x2, y2) where u1 = hw (mod p) and u2 = rw (mod p) therefore lhs= kg=(x1, y1) and r = x1 (mod p) rhs=u1g + u2qa = (x2, y2) and v= x2(mod p) hence v=r the signature is valid if v = r valid, invalid otherwise. in this algorithm if the same key k is being used for signing each and every messages, then there is an issue of the secret key being found by the intruder. this is explained in the following example, where the same secret k is applied for two different messages m1 and m2. in this process two signatures (r, s1) and (r, s2) are generated from the eq. (10) and eq. (11) as s1 = k −1 (h1 + da r) (10) s2 = k −1 (h2 + da r) (11) where h1 = sha-3 (m1); h2 = sha-3 (m2) knowing s1 and s2 it is possible to find the secret key k using the eq. (12) k = (h1 – h2)/(s1 – s2) (12) from the equation k s1  k s2 = h1 + da r  h2 – da r thus knowing k, r, s and h in the encryption concept, it is possible to find da by eq. (13) da = (ksh)/r (13) hence different key should be used for signing different messages, otherwise the private key da can be sensed by the intruder. the ecdsa is modified to solve the above problem by considering inverse operation only in verification phase. in this method there is no need of inverse operation in the key generation and signing phase there is no need of inverse operation. the scheme processes are discussed in the following sub-sections having the same key pair generation algorithm. 4.5. ecdsa scheme 2 signature generation using the sender‟s private key da and public key qa step 1: compute h = hash (m) = sha-3 (m) step 2: select a random integer k from [1, p − 1] step 3: compute kg= (x1, y1) step 4: compute r = x1 (mod p), if r = 0, go to step 2 step 5: compute s = (kh + (r xor h)da) g (mod p). if s = 0, go to step 2 the signature pair generated is (r, s) 136 v. kamalakannan, s. tamilselvan 4.6. ecdsa scheme 2 signature verification using the sender‟s private key da and public key qa using public key qa and sender‟s signature (r, s) step 1: verify that r and s are integers in [1, p − 1]. if not, the signature is invalid step 2: compute h = hash (m) = sha-3 (m) step 3: compute w = h −1 (mod p) step 4: compute u = (r xor h) (mod p) step 5: compute (x2, y2) = w(s – uqa) step 6: the signature is valid if v = x2 (mod n) = r, invalid otherwise 4.7. proof of ecdsa scheme 2 step 1: compute s = (kh + (r xor h)da) g = (kh + u da) g = khg + udag step 2: compute sw = khwg + uwdag step 3: compute sw = kg + uwqa where w = h -1 (mod p) and qa = da g (mod p) step 4: compute kg = swuwqa = w (s – u qs) therefore lhs= kg=(x1, y1) and r = x1 (mod p) rhs= w(s – u qa) = (x2, y2) and v= x2(mod p) hence v=r in the ecdsa scheme 2, an intruder can forge the signature by knowing the public parameters (g, n, p, qs) and transmit the wrong information to the receiver. the receiver receives the signature and verifies the signature to authenticate the sender's signature. this is been explained as follows if an intruder „t‟ is forges the signature by knowing the public parameters (g, n, p, qs) for a false message „m‟ in the following steps step 1: for signing a message „m‟ by sender, using private key da and public key qs = dag step 2: calculate h = hash (m) = sha-3 (m) step 3: select a random integer kt from [1, p − 1] step 4: compute kt g= (xt, yt) step 5: calculate rt = xt (mod p), if rt = 0, go to step 2 step 6: calculate st = (kt h + (rt xor h) qs (mod p). if st = 0, go to step 2 thus the signature pair (rt, st) is transmitted with the false message „m‟ the receiver obtains an authenticated copy of sender‟s signature pair with the false message „m‟ and verifys the authenticity of sender‟s signature (rt, st) using public parameters (g, n, p, qs) for message „m‟ by performing the following steps: step 1: verify that rt and st are integers in [1, p − 1]. if not, the signature is invalid step 2: calculate h = hash (m) = sha-3 (m) step 3: calculate w = h −1 (mod p) step 4: calculate u = (rt xor h)(mod p) step 5: calculate (xt, yt) = w(st –uqs) step 6: the signature is valid if vt = xt (mod p) = rt, invalid otherwise if the forged signature is validated, then intruder can successfully send false information, hence digital signature schemes are not secure. to solve this drawback public parameters being shared are reduced. fpga implementation of modified elliptic curve digital signature algorithm 137 5. modified elliptic curve digital signature algorithm while comparing the original ecdsa and its variants, it is found that original ecdsa is vulnerable to attack if the same key is used for different messages. scheme 2 is useful for verifier with limited compute apparatus as there is no inverse calculation in key generation and signing phase, but anyone can use legitimate user‟s public-key to forge the signature of any information. thus in the modified ecdsa scheme hidden generator point concept is applied to authenticate the encrypted message communicated between the devices connected in the perceptual layer of iot. the normal ecdsa are configured with the points on the elliptic curve, a generator point „g‟ is selected publicly available and distributed over the network by the certificate authority (ca) [11]. in this scheme, the requirement of ca makes it difficult to implement security. the information shared by the ca can be breached by the intruders, making the network susceptible to mim attack [12]. hence to elucidate this exposure and to secure the network against mim attacks, maintaining the security for each session of communication between the two nodes without a common generator point is suggested. therefore a generator point is shared only between the devices being connected to communicate. this concept is implemented in the ecdsa has two stages; initialization stage and authorization stage. 5.1 initialization stage let us consider two nodes represented in fig. 5 in the wsn. it is assumed that both nodes, i.e. sender and receiver, select their generator points, gs and gr individually apart from the private keys, ks and kr. the inverse of the private keys ks -1 and kr -1 are also computed. once the inverse of the private keys are computed, the sender generates its public key psa using the eq. (14), whereas the receiver generates its public key pra using the eq. (15) psa = ks -1 gs (14) pra =kr -1 gr (15) both the public keys psa and pra are exchanged between sender and receiver after multiplying it with the inverses of their private keys. the resultant key is transmitted to the receiver as is specified in the eq. (16), and the resultant key received by the sender is specified in the eq. (17) psb = praks -1 = kr -1 grks -1 (16) prb = psakr -1 = ks -1 gskr -1 (17) fig. 5 computational process for generator point 138 v. kamalakannan, s. tamilselvan these received keys are multiplied again by the sender and the receiver to generate psc and prc as specified in eq. (18) and eq. (19) psc=prbks=ks -1 gskr -1 ks =gskr -1 (18) prc=psbkr=kr -1 grks -1 kr= grks -1 (19) when psc and prc received by the individual sender and receiver, they are multiplied with ks and kr to obtain gr and gs. the sender computes the receiver‟s generator point in eq. (20) as prc*ks=ks -1 *gr*ks=gr (20) the receiver computes the sender‟s generator in eq. (21) as psc*kr=kr -1 *gs*kr=gs (21) these generator points gs and gr are added to generate a common generator points for the sender and receiver given in eq. (22) as g = gs + gr (22) hence the sender and receiver exchanges information between them and generated using „g‟ and computing p, 2p….. kp. 5.2 authorization stage let us consider two nodes in the wsn. the public key and the private keys of the transmitter are ps and ks, whereas for receiver it is pr and kr. the key has to be generated by the process shown in fig. 6 for every session of transmission between the sender and receiver. thus authorization has to be provided for each transmission. fig. 6 computational process for key both the public keys psr and prs are exchanged after multiplying it with private keys. the key transmitted to the receiver is specified in the eq. (23), and the key received by the sender is specified in the eq. (24) fpga implementation of modified elliptic curve digital signature algorithm 139 psr = prks (23) prs = pskr (24) the keys of the sender and the receiver are multiplied again to generate ksr and krs given in eq. (25) and eq. (26) as ksr = psrprs = prks pskr (25) krs = prspsr = prks pskr (26) when psr and prs received by the individuals, the key ksr and krs are generated by the sender and receiver individually which are equal, thus commonly referred as key „k‟ in the implementation of ecdsa. the sender and receiver in the wsn have individual generator points, gs and gr with their unique private keys, ks and kr. after initializing the keys generation process, both devices exchange the generator points gs and gr and generate a common generator point by the initialization process explained in subsection 5.1. hence the sender and receiver exchange information between them by considering common generator point ‘g’ and computing p, 2p, 3p….. kp. the sensor nodes must securely share a key before encryption. the shared secret key is generated and refreshed between the sender and receiver. the public key of sender and receiver are ps and pr. are exchanged using dhke process and a key is generated by the method explained in the sub section 5.2. considering the generator point ‘g’ and key ‘k’, scalar multiplication is performed to compute kg provided in eq. (27), to be applied for signature generation and signature verification process. ( ) ( ) (27) from the initialization and authorization stage, the values of k and g are known. this scheme processes are discussed in the following steps. 5.3. modified ecdsa signature generation to generates the signature for message m the signer using the values of k and g by performing the following steps: step 1: calculate h = hash (m) = sha-3 (m) step 2: compute kg= (x1, y1) step 4: compute r = x1 (mod p) step 5: compute s = (k + (r xnor h)) g (mod p). the signature pair thus generated is (r, s). 5.4. modified ecdsa signature verification the verifier verifies the signature using k and g from the initialization and authorization stage for message m by performing the following steps: step 1: verify that s is integers in [1, p − 1]. if not, the signature is invalid step 2: compute kg= (x1, y1) step 3: compute r = x1 (mod p) step 4: compute u = (r xnor h) mod (mod p) step 5: (x2, y2) = (s ug) step 6: the signature is valid if v = x2 (mod p) = r, invalid otherwise. 140 v. kamalakannan, s. tamilselvan 5.5 proof of modified ecdsa scheme signature send by sender to receiver is (r, s) and s can be generated only by sender because of its private key. step 1: compute s = (k + (r xnor h) g step 2: compute s = (k + u) g where u = (r xnor h) step 3: compute s = kg + ug step 4: compute s ug = kg = (x2, y2) therefore lhs = kg = (x1, y1) and r = x1 (mod p) rhs = (s  ug) = (x2, y2) and v = x2(mod p) hence v=r the improved ecdsa scheme reduces the computational cost while keeping the same security as original ecdsa. they are suitable for the users who have limited computing capacity. 6. comparison of elliptic curve digital signature algorithm the original ecdsa and proposed ecdsa are compared and represented in the table 2. while comparing the original ecdsa and the proposed ecdsa, it is found that the original ecdsa consists of inverse operations in signature generation and signature verification and hence is more complex as needs more point multiplication operation. the improved scheme, the initialization stage and authorization stage are introduced to share the values of k and g between the sender and receiver, thus reducing the computational cost as no inverse operations are required for signature generation and signature verification, while keeping the same security as original ecdsa. table 2 comparison of ecdsa variants algorithm signature generation signature verification attack inverse in key generation inverse in signing inverse in verification original ecdsa s=k− 1(h + dar) u1=hs−1 u2=rs−1 u1g + u2qa vulnerable no yes yes proposed ecdsa s = (k + (r xnor h) g u = (r xnor h) (s ug) not vulnerable no no no 7. implementation and synthesis elliptic curve digital signature algorithm the original ecdsa signature generation and signature verification was realized in verilog hdl and simulation was carried out using isim simulation tool available in xilinx 14.3 for verifying its functional correctness. the rtl block schematic of the ecdsa signature generation is illustrated in fig. 7 and ecdsa signature verification is illustrated in fig. 8. fpga implementation of modified elliptic curve digital signature algorithm 141 the ecdsa signature generation and signature verification were synthesized and the device utilization summary, timings summary and memory utilization are tabulated in table 3. the hardware implementation of ecdsa signature generation was performed on virtex-5 5xc5vlx50t-1ff1136 fpga development board by xilinx to evaluate the area and speed. it was found that the ecdsa signature generation operated at a maximum frequency of 13.180 mhz whereas the ecdsa signature verification operated at a maximum frequency of 13.210 mhz. fig. 7 rtl block schematic of ecdsa signature generation fig. 8 rtl block schematic of ecdsa signature verification 142 v. kamalakannan, s. tamilselvan table 3 synthesis summary for ecdsa parameters signature generation signature verification slice registers 6701 6790 slice luts 16370 22734 lut-ff pairs 4884 4996 bonded iobs 226 226 real time 2627.00 secs 890.00 secs cpu time 2626.99 secs 890.19 secs maximum frequency 13.180 mhz 13.210 mhz the modified ecdsa signature generation and signature verification was realized in verilog hdl and the simulation was carried out using isim simulation tool in xilinx for verifying its functional correctness. the rtl block schematic of the modified ecdsa signature generation is illustrated in fig. 9, and modified ecdsa signature verification is illustrated in fig. 10. fig. 9 rtl block schematic of modified ecdsa signature generation fig. 10 rtl block schematic of modified ecdsa signature verification fpga implementation of modified elliptic curve digital signature algorithm 143 the modified ecdsa signature generation and signature verification are synthesized and the device utilization summary, timings summary and memory utilization are tabulated in the table 4. table 4 synthesis summary for modified ecdsa parameters signature generation signature verification slice registers 198 454 slice luts 7853 16387 lut-ff pairs 152 346 bonded iobs 41 34 real time 924.00 secs 910.00 secs cpu time 923.69 secs 910.09 secs maximum frequency 13.469 mhz 13.156 mhz 8. result analysis of elliptic curve digital signature algorithm the ecdsa and its variants are synthesized and analyzed using xilinx tool. the table 5 and table 6 illustrate the values obtained after synthesizing original ecdsa and modified ecdsa scheme for signature generation and signature verification. comparison was performed related to maximum frequency and number of slice luts. table 5 comparison of synthesis results of ecdsa signature generation parameters original ecdsa proposed ecdsa number of slice luts 16370 7853 max. frequency(mhz) 13.180 13.469 table 6 comparison of synthesis results ecdsa signature verification parameters original ecdsa proposed ecdsa number of slice luts 22734 16387 max. frequency(mhz) 13.210 13.156 the outcomes obtained show that the modified ecdsa scheme is better suitable for resource constrained devices. the maximum achievable frequency of 13.469 mhz is achieved for signature generation and maximum achievable frequency of 13.156 mhz is achieved for signature verification on virtex-5 (xc5vlx50t-1ff1136) fpga board is better than the existing ecdsa schemes. based on the design metric such as frequency (mhz) and area (slices/aluts), the modified ecdsa outperforms the existing ones in terms of time for execution and slice luts required in fpga device. 144 v. kamalakannan, s. tamilselvan 9. conclusion elliptic curve digital signature algorithm (ecdsa) is one of the primitives of elliptic curve cryptography (ecc). the sha-3 algorithms like keccak provide better security and proves beneficial wherever security constraints have to be achieved. here a variant of keccak-f [1600] having five steps (𝜃 step, 𝜌 𝑎𝑛𝑑 𝜋 step, 𝜒 step and 𝜏 step) repeated 24 times were applied to generate hashed output. generally, modular inversion is computed using montgomery‟s method which consists of a gcd operations. the gcd operation utilizes more number of arithmetical operations. thus computational cost increases when implemented on fpga as number of operations increases. from the analysis, it is found that ecdsa is vulnerable to mim attack when the same key is applied for all messages. at the same time if computational cost is reduced, then there are chances of signature being forged by the intruder. therefore, the modified ecdsa scheme keeps the mathematical structure of ecdsa and security the same as the original ecdsa scheme, but reduces the computational cost by reducing the inverse operation being applied in the key generation and signing phase. also this scheme solves the problems related to signature forging due to the available public parameters (g, n, p, qs). these are achieved by using hidden generator concept. hence this scheme has more security with less computational cost, therefore can be implemented in the perceptual layer devices in iot i.e., the ecdsa can be applied for securing the information communicated by devices such as wsns, rfids, etc., having limited memory and computational capacity. since fpgas are used as end products, the design of ecdsa is fine-tuned for fpga implementation. the work can be extended by considering advanced fpgas where parallelism can be exploited in the architecture to reduce the delay in the asymmetrical cryptography. references [1] n. koblitz, a. j. menezes, and s. a. vanstone, “the state of elliptic curve cryptography”, design, codes, and cryptography, vol. 19, issue 2-3, pp.173-193, 2000. [2] v. miller, “use of elliptic curves in cryptography”, advances in cryptography-crypto ‟85. lncs 218, springer verlag, 1986, pp. 417-426. [3] g. provelengios, p. kitsos, n. sklavos, and c. koulamas, “fpga-based design approaches of keccak hash function,” in proceedings of the 15th euromicro conference, 2012, pp. 648-653. [4] d. manel, o. raouf, h. ramzi and a. mtibaa, “hash function and digital signature based on elliptic curve”, in proceedings of the 14th international conference on sciences and techniques of automatic control & computer engineering sta'2013, sousse, tunisia, december 20-22, 2013 pp. 388-392. [5] k. latif, m. m. rao, a. aziz, and a. mahboob, “efficient hardware implementations and hardware performance evaluation of sha-3 finalists,” in proceeding of 3rd sha-3 candidate conference, march 2012. [6] s. p. raj, a. p. renold, “an enhanced elliptic curve algorithm for secured data transmission in wireless sensor network”, in proceedings of global conference on communication technologies (gcct 2015), pp. 891-896. [7] a. khalique, k. singh, s. sood, “implementation of elliptic curve digital signature algorithm”, international journal of computer applications, vol. 2, no. 2, pp. 21-27, may 2010. [8] e. wajih, b. noura, m. mohsen & t. rached, “low power elliptic curve digital signature design for constrained devices”, international journal of security (ijs), vol. 6, no.2, pp. 1-14, april 2012. [9] g. sarath, d. c. jinwala and s. patel, “a survey on elliptic curve digital signature algorithm and its variants”, computer science & information technology (cs & it) –cscp, 2014, pp. 121–136. [10] a. i. ali, h. p. isitc, “comparison and evaluation of digital signature schemes employed in ndn network”, international journal of embedded systems and applications (ijesa), vol. 5, no. 2, pp. 15-29, june 2015, fpga implementation of modified elliptic curve digital signature algorithm 145 [11] h. junru, “the improved elliptic curve digital signature algorithm”, in proceedings of the international conference on electronic and mechanical engineering and information technology (emeit), 2011, pp. 257-259. [12] b. panjwani, d. c. mehta, “hardware-software co-design of elliptic curve digital signature algorithm over binary fields”, in proceedings of the international conference on advances in computing, communications and informatics (icacci), 2015, pp. 1101-1106. [13] x. zhang, s. ma, w. shi, and d. han, “implementation of elliptic curve digital signature algorithm on iris nodes”, in proceedings of the international conference on estimation, detection and information fusion (icedif 2015), pp. 403-406. instruction facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 25 39 https://doi.org/10.2298/fuee1801025b comparative evaluation of quasi-delay-insensitive asynchronous adders corresponding to return-to-zero and return-to-one handshaking padmanabhan balasubramanian school of electrical and electronic engineering, nanyang technological university, singapore abstract. this article makes a comparative evaluation of quasi-delay-insensitive (qdi) asynchronous adders, realized using the delay-insensitive dual-rail code, which adhere to 4-phase return-to-zero (rtz) and 4-phase return-to-one (rto) handshake protocols. the qdi adders realized correspond to the following adder architectures: i) ripple carry adder, ii) carry lookahead adder, and iii) carry select adder. the qdi adders correspond to three different timing regimes viz. strong-indication, weak-indication, and early output. they are physically implemented using a 32/28nm cmos process. the comparative evaluation shows that, overall, qdi adders which correspond to the 4-phase rto handshake protocol are better than the qdi adder counterparts which correspond to the 4-phase rtz handshake protocol in terms of latency, area, and average power dissipation. key words: asynchronous circuits, qdi, adders, indication, standard cells, cmos 1. introduction the international technology roadmap for semiconductors (itrs 2.0) [1] has identified design for variability as one of the key challenges for nanoelectronics. process variability and device variability have assumed more significance in the nanoelectronics era compared to the microelectronics era. this is because random dopant and atomistic fluctuations, high heat flux, negative bias temperature instability, electro-migration, hot carrier effects, stress-induced variation, process-induced defects, electrostatic discharge, and metrology and other manufacturing issues have become more prominent in the nanoelectronics era compared to the microelectronics era. to overcome these issues, solutions are being developed at various levels such as at material-level, process-level, device-level, circuit-level, and the system-level [2]. received september 18, 2017 corresponding author: padmanabhan balasubramanian the author is now with the school of computer science and engineering, nanyang technological university, 50 nanyang avenue, singapore 639798 (e-mail: balasubramanian@ntu.edu.sg) 26 p. balasubramanian at the circuit-level, the qdi 1 asynchronous design method [3] employing delayinsensitive code(s) for data representation and processing and a 4-phase handshake protocol for data communication is considered to be robust and is construed to be a viable alternative to the synchronous design method [4]. this is because qdi circuits encompass several advantages [5] such as low power [6 – 9], tolerance to noise and electromagnetic interference [10 – 12], ability to withstand process, voltage and temperature variations [13] [14], self-checking [15], resistant to side channel attacks in the case of secure applications [16 – 19] etc. in general, qdi circuits widely employ the delay-insensitive dual-rail data encoding and the 4-phase rtz handshaking [20]. however, a new 4-phase rto handshake protocol was proposed [21] for qdi circuits. based on a few case studies [22] [23], it was reported that qdi circuits which correspond to the rto protocol report better design metrics than their qdi circuit counterparts adhering to the rtz protocol. qdi circuits performing data transactions based on either the rtz or the rto protocol are robust. qdi circuits and systems are guaranteed to be correct by construction since they adopt unbounded delay models for gates and wires, with the only exception of isochronic forks 2 [24] which represent the weakest compromise to delay-insensitivity. in this work, the adder which forms an important datapath of any processing unit is considered for the analysis to compare the efficiency of the rto protocol versus the rtz protocol. various adder architectures such as the ripple carry adder (rca), the carry lookahead adder (cla), and the carry select adder (csla) are considered for qdi implementation based on the rtz and rto protocols to perform a comprehensive comparative evaluation. this work builds upon [25], wherein only the rca architecture was considered to comparatively evaluate the rtz and rto protocols. the rest of this article is organized as follows. section 2 provides an overview of: i) qdi circuit operation encompassing delay-insensitive data encoding and data transaction using the rtz and rto handshake protocols, and ii) the types of qdi circuits, their timing characteristics, and their general properties. section 3 presents the logic rules for transforming qdi circuits corresponding to the rtz protocol into qdi circuits adhering to the rto protocol and vice-versa. also, some circuit illustrations are provided in this section. section 4 presents the simulation results corresponding to several 32-bit qdi rcas, clas, and cslas, implemented using delay-insensitive dual-rail data encoding and adhering to rtz and rto handshaking. the qdi adders realized correspond to strong-indication, weak-indication, and early output. section 5 provides the conclusions. 2. qdi circuit operation, types and properties 2.1. operation of qdi circuit the architecture of a qdi circuit is correlated with the sender (sx) and receiver (rx) analogy in figure 1a. the qdi circuit is sandwiched between the current stage and the 1 qdi design represents a robust flavor of asynchronous circuit design methods. qdi circuits are the practically realizable delay-insensitive asynchronous circuits. 2 an isochronic fork implies that the up-going or down-going signal transitions on all the ends of the fork are assumed to be concurrent. comparative evaluation of quasi-delay-insensitive asynchronous adders... 27 next stage register banks. a register in a qdi design is a 2-input c-element that is represented by the circle with the marking c in the figures. the c-element outputs binary 1 or 0 only if all its inputs are binary 1 or 0 respectively and would maintain its existing steady-state even if any of its inputs is different. qdi circuit current stage register next stage register completion detector (cd) ackout ackin completion detector (cd) ackout ackin ackout ackout x1 x0 sender (sx) receiver (rx) ackin qdi circuit x1 x0 y1 y0 z1 z0 c (b) x1 x0 y1 y0 z1 z0 c (c) cdrtz cdrto (a) z1 z0 y1 y0 fig. 1 (a) an asynchronous circuit, correlated with the sender-receiver analogy for illustration. completion detectors corresponding to (b) the rtz handshake protocol, and (c) the rto handshake protocol. a single-rail data wire x is encoded using the dual-rail code [26] into two data wires as x1 and x0. based on the rtz protocol [20], the data x = 1 is represented by x1 = 1 and x0 = 0, and the data x = 0 is represented by x0 = 1 and x1 = 0. x1 = x0 = 0 represents the spacer. x1 = x0 = 1 is invalid since the coding scheme is unordered [27] and where no code word is allowed to be a subset of another code word. according to the rtz protocol, the application of primary inputs to a qdi circuit should follow the sequence: data-spacer-data-spacer, and so forth, with each input data followed by the rtz of the encoded data wires. note that binary 1 is used to represent data with respect to the rtz protocol. on the other hand, according to the rto protocol [21], binary 0 is used to 28 p. balasubramanian represent data. as per the rto protocol, the valid data y = 1 is represented by y1 = 0 and y0 = 1, and y = 0 is represented by y0 = 0 and y1 = 1. the spacer is represented by y0 = y1 = 1. y1 = y0 = 0 is deemed invalid since the coding scheme is unordered. as per the rto protocol, the application of primary inputs to a qdi circuit follows the sequence: spacer-data-spacer-data, and so forth, with each input data followed by the rto of the encoded data wires. the 4-phase handshake protocol, whether it is rtz or rto, consists of four phases which will be explained with reference to figure 1a by considering dual-rail encoded data. however, the explanation would be applicable for data represented using any delayinsensitive 1-of-n code [26]. as per the rtz protocol, in the first phase, the dual-rail data bus shown in figure 1a which is specified by (x1, x0), (y1, y0), and (z1, z0) is in the spacer state, and ackin is high. sx transmits data and this results in rising signal transitions on anyone of the corresponding dual rails of the entire dual-rail data bus. in the second phase, rx receives the data sent, and it drives ackout high. in the third phase, sx waits for ackin to go low and then resets the entire dual-rail data bus to the spacer state i.e. all 0s. in the fourth phase, after an unbounded but a finite and positive time, rx would drive ackout low i.e. ackin becomes high. with this one data transaction is said to be complete, and the asynchronous circuit is ready to proceed with the next data transaction. an example completion detector, which comprises the dual-rail encoded primary inputs (x1, x0), (y1, y0), and (z1, z0), that indicates or acknowledges the receipt of data and the all zeroes spacer on the primary inputs through its output cdrtz is illustrated in figure 1b. the completion detector shown in figure 1b corresponds to the rtz protocol. with respect to the rto handshake protocol, in the first phase, ackin is 1. sx would transmit the spacer i.e. all 1s, and this causes rising signal transitions on all the rails of the dual-rail data bus. in the second phase, rx receives the spacer sent, and it drives ackout high. in the third phase, tx waits for ackin to assume 0 and then sends the input data by resetting any one of the corresponding dual-rails of the entire dual-rail data bus. then in the fourth phase, after an unbounded but a finite and positive time, rx would drive ackout low i.e. ackin becomes high. with this one data transaction is said to be complete, and the qdi circuit is ready to commence the next data transaction. an example completion detector that comprises the dual-rail encoded primary inputs (x1, x0), (y1, y0), and (z1, z0), which indicates the receipt of data and the all ones spacer on the primary inputs through its output cdrto is depicted by figure 1c. this completion detector corresponds to the rto protocol. 2.2. types of qdi circuits qdi circuits are classified as strongly indicating, weakly indicating, and early output types [28]. a strong-indication qdi circuit [29] [30] waits to receive all the primary inputs, whether they are data or spacer, and then starts data processing to produce the required primary outputs. a weak-indication qdi circuit [29] [31] would produce some of the primary outputs after receiving a subset of the primary inputs. however, the production of at least one primary output is delayed till the last primary input is received. an early output qdi circuit [32] [33] is the most relaxed of the three in that it is able to produce all the primary outputs after receiving a subset of the primary inputs. if an early output qdi circuit produces data early, it is said to be of early set type, and if an early output qdi circuit assumes the spacer state early, it is said to be of early reset type. the comparative evaluation of quasi-delay-insensitive asynchronous adders... 29 input-output timing behaviour of strong-indication, weak-indication, and early output qdi circuits is captured by figure 2. the early set and reset behaviours are shown in figure 2. inputs arrival all none all none outputs production strong-indication all none outputs production weak-indication all none outputs production early output valid data arriving spacer data arriving valid data arrived spacer data arrived early set behaviour early reset behaviour fig. 2 input-output timing characteristic of strong-indication, weak-indication, and early output qdi circuits 2.3. general properties of qdi circuits qdi circuits, regardless of whether they are strongly indicating or weakly indicating or early output type, have some properties in common. firstly, qdi circuits should be free of wire and gate orphans [34] [35]. a wire orphan refers to an unacknowledged signal transition on a wire. the wire orphan problem, if any, can be resolved through the isochronic fork assumption. a gate orphan is an unacknowledged signal transition on an intermediate gate output. the gate orphan problem is difficult to resolve and to overcome it, sophisticated timing assumption(s) might be required. secondly, qdi circuits tend to satisfy the monotonic cover constraint [16], which implies the activation of a unique signal path from a primary input to a primary output for each input data applied. the monotonic cover constraint is implicit in a disjoint sum-of-products expression [36], which is used to synthesize a qdi circuit. in a disjoint sum-of-products expression, the product terms are mutually orthogonal, i.e. the logical conjunction of any two product terms in a disjoint sum-of-products expression yields null [37 – 39]. thirdly, the signal 30 p. balasubramanian transitions ripple monotonically [40] from the first logic level up to the last logic level in a qdi circuit [41]. the transitions either increase or decrease monotonically. for a qdi circuit that adheres to the rtz protocol, for the application of data, the transitions would increase monotonically and for the application of spacer, the transitions would decrease monotonically. on the contrary, for a qdi circuit adhering to the rto protocol, for the application of spacer, the transitions would increase monotonically, and for the application of data, the transitions would decrease monotonically throughout the circuit. it is important to ascertain the type of a qdi circuit when it is composed using many qdi sub-circuits, as is common in the design of qdi arithmetic circuits. in general, a cascade of strong-indication or weak-indication or early output qdi sub-circuits yields a strong-indication or a weak-indication or an early output qdi circuit respectively. sometimes there might be an exception when composing early output qdi sub-circuits. for example, it was noted in [42] [43] that a cascade of early output qdi full adders led to a relative-timed rca, whereas in [33] [44] a cascade of early output qdi full adders led to an early output rca. this might be because in terms of robustness, the strong-indication timing model tops the hierarchy followed by the weak-indication timing model, which is succeeded by the early output timing model. the relative-timing model is not qdi and is the least robust of the asynchronous timing models described. relative-timed asynchronous circuits [45] require explicit and perhaps complicated timing assumptions to ensure their safe operation but could exhibit more optimized design metrics compared to the qdi circuits. hence, in the case of relative-timing, the robustness is traded off for greater design optimization [46]. further, a cascade of qdi sub-circuits with more robust and less robust timing models generally causes the least robust timing model to be ascribed to the resultant qdi circuit. for example, a cascade of strong-indication and weak-indication qdi subcircuits leads to a weak-indication qdi circuit. a cascade of strong-indication and/or weakindication qdi sub-circuits and early output qdi sub-circuit(s) leads to an early output qdi circuit. 3. logic rules for rtz to rto and vice-versa protocol conversion qdi circuits, regardless of whether they correspond to the rtz or the rto protocol, when physically realized, generally consist of c-elements 3 and simple and complex logic gates. any c-elements used in a qdi circuit, whether they correspond to the rtz or the rto protocol, would remain unchanged and their inputs would also be unchanged when transforming a qdi circuit which adheres to the rtz protocol into a qdi circuit which corresponds to the rto protocol and vice-versa. the logic transformation rules to be discussed below, which could facilitate the rtz to rto and vice-versa protocol conversion are applicable only to the discrete and complex logic gates comprising the respective circuits and excludes any c-elements. the logic transformation rules for the handshake protocols conversion tend to obey the well-established duality principle of boolean algebra. the duality principle [47] states that every algebraic expression that is deduced using the postulates of boolean algebra remains valid if the logical operators and 3 the c-element outputs binary 1 or 0 only when all its inputs are binary 1 or 0. if any of its inputs is different, the c-element would maintain its existing steady-state. the c-element is portrayed by an and gate with the marking „c‟ on its periphery. comparative evaluation of quasi-delay-insensitive asynchronous adders... 31 identity elements are interchanged. herein, it implies that for the rtz to rto protocol conversion the and operator should be replaced by the or operator and the or operator should be replaced by the and operator; the reverse is applicable for the rto to rtz protocol conversion. an example set of logic transformation rules for the handshake protocols conversion and their proofs by induction are provided below. these rules may be extended without any loss of generality depending upon a qdi circuit composition. rtz: p + q ↔ rto: pq (1) rtz: p + qr ↔ rto: p (q + r) (2) rtz: pq + rs ↔ rto: (p + q) (r + s) (3) the function (p + q) corresponding to the rtz protocol, given in (1), is implemented using a 2-input or gate, and the rto equivalent viz. pq is implemented using a 2-input and gate. table 1 shows the proof by induction for (1). the 2-input or and and gates are simple logic gates present in a standard digital cell library [48]. the function (p + qr) corresponding to the rtz protocol, given in (2), can be implemented using the ao21 gate and its rto equivalent viz. p (q + r) can be implemented using the oa21 gate. table 2 shows the proof by induction for (2). the function (pq + rs) corresponding to the rtz protocol, given in (3), can be implemented using the ao22 gate and the rto equivalent i.e. (p + q) (r + s) can be implemented using the oa22 gate. table 3 shows the proof by induction for (3). the ao21, oa21, ao22 and oa22 gates are complex logic gates present in a standard digital cell library [48]. table 1 proof by induction for (1) inputs rtz rto p q p + q pq 0 0 0 0 0 1 1 0 1 0 1 0 1 1 1 1 recall that binary 1 is used to represent the data with respect to the rtz protocol and binary 0 is used to represent the data with respect to the rto protocol after data encoding. this is conformance with the duality property of boolean algebra, which states that identity elements can be interchanged [47]. as mentioned in section 2.1, the zeroes spacer is used in the case of the rtz protocol and the ones spacer is used in the case of the rto protocol. given these, it can be seen from table 1 that if the input p or q is 1, which indicates the data with respect to the rtz protocol, (p + q) would yield 1, and when p and q are 0 then (p + q) would yield 0 indicating the rtz state. on the other hand, if either p or q is 0 in table 1, which indicates the data based on the rto protocol, pq would evaluate to 0, and when p and q are 1, pq would evaluate to 1, which indicates the rto state. in tables 2 and 3, sub-functions are additionally introduced for the sakes of clarity and illustration. in the case of table 2, if p or qr is 1, then (p + qr) evaluates to 1 signifying the data according to the rtz protocol, and if p and qr are 0, then (p + qr) 32 p. balasubramanian evaluates to 0 signifying the rtz state. if p or (q + r) is 0, then p (q + r) evaluates to 0 signifying the data according to the rto protocol, and if p and (q + r) are 1, then p (q + r) evaluates to 1 signifying the rto state. with respect to table 3, if pq or rs is 1, then (pq + rs) evaluates to 1 signifying the data as per the rtz protocol, and if pq and rs are 0, then (pq + rs) evaluates to 0 signifying the rtz state. however, if (p + q) or (r + s) is 0, then (p + q) (r + s) evaluates to 0 signifying the data as per the rto protocol. supposing (p + q) and (r + s) are 1, then (p + q) (r + s) would evaluate to 1 signifying the rto state. table 2 proof by induction for (2) inputs rtz sub-function rtz rto sub-function rto p q r qr p + qr q + r p (q + r) 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 1 0 0 0 1 0 0 1 1 1 1 1 0 1 0 0 0 1 0 0 1 0 1 0 1 1 1 1 1 0 0 1 1 1 1 1 1 1 1 1 1 table 3 proof by induction for (3) inputs rtz sub-functions rtz rto sub-functions rto p q r s pq rs pq + rs p + q r + s (p + q) (r + s) 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 1 0 0 0 1 0 0 0 0 0 1 0 0 0 1 1 0 1 1 0 1 0 0 1 0 0 0 0 0 1 0 0 0 1 0 1 0 0 0 1 1 1 0 1 1 0 0 0 0 1 1 1 0 1 1 1 0 1 1 1 1 1 1 0 0 0 0 0 0 1 0 0 1 0 0 1 0 0 0 1 1 1 1 0 1 0 0 0 0 1 1 1 1 0 1 1 0 1 1 1 1 1 1 1 0 0 1 0 1 1 0 0 1 1 0 1 1 0 1 1 1 1 1 1 1 0 1 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 example circuits to illustrate the conversion from rtz to rto protocol and viceversa are shown in figure 3. comparative evaluation of quasi-delay-insensitive asynchronous adders... 33 a0 cin1 cout1 cin1 cin0 cin0 cin0 cin1 sum0 cout0 b1 a1 b0 a0 b0 a1 b1 sum1 (a) c c c c c c c c c c a0 cin1 cout1 cin1 cin0 cin0 cin0 cin1 sum0 cout0 b1 a1 b0 a0 b0 a1 b1 sum1 c c c c c c c c c c (b) a0 cin0 cin1 b1 a1 b0 a0 cin1 cin0 b0 a1 b1 sum1 sum0 cin1 cin0 cout1 (c) c c c c c c c c cout0 a0 cin0 cin1 b1 a1 b0 a0 cin1 cin0 b0 a1 b1 sum1 sum0 cin1 cin0 cout1 (d) c c c c c c c c cout0 a0 b0 a1 b1 cin1 cin0 sum0 sum1 cin1 a1 b1 cout1 cin0 a0 b0 cout0 (e) c c a0 b1 a1 b0 cin1 cin0 c c a0 b0 a1 b1 cin1 cin0 sum0 sum1 cout1 (f) c c cin1 cin0 c c a0 b1 a1 b0 a1 b1 a0 b0 cout0 cin1 cin0 fig 3 strongly indicating full adder [50] corresponding to (a) rtz handshaking and (b) rto handshaking; weakly indicating full adder [51] corresponding to (c) rtz handshaking and (d) rto handshaking; early output full adder [33], corresponding to (e) rtz handshaking (early reset type) and (f) rto handshaking (early set type) figure 3 portrays strong-indication, weak-indication and early output implementations of the full adder. the full adder adds an augend and an addend along with a carry input 34 p. balasubramanian and produces the sum output and any carry overflow. in figure 3, (a1, a0), (b1, b0) and (cin1, cin0) represent the dual-rail augend, addend and carry inputs of the full adders, and (sum1, sum0) and (cout1, cout0) represent the dual-rail sum and carry outputs. figures 3a, 3c and 3e depict full adder implementations which correspond to the rtz protocol, and figures 3b, 3d and 3f show the respective full adder realizations which correspond to the rto protocol. the 2-input or gates, ao21 gates and ao22 gates of figures 3a, 3c and 3e are replaced by 2-input and gates, oa21 gates and oa22 gates respectively in figures 3b, 3d and 3f, in accordance with (1), (2) and (3), given earlier. note that there is no change whatsoever in the inputs or outputs of the corresponding circuits belonging to the rtz and the rto protocols in figure 3. moreover, the 2-input c-elements and their corresponding inputs remain unchanged. 4. simulation results several 32-bit qdi rcas [49 – 55], clas [56] [57] and cslas [58] were semicustom realized using the standard digital library cells of a 32/28nm cmos process [48]. the 2-input c-element was alone custom realized by modifying the ao222 complex gate by introducing feedback. the 2-input c-element was realized using 12 transistors and was made available to implement the various qdi adders, which correspond to rtz and rto protocols. any high-input c-element functionality, wherever likely in an adder design, was safely decomposed in qdi style [59] to avoid the problem of gate orphans. about 1000 random input vectors were identically supplied to all the qdi adders through a test bench at time intervals of 20ns to perform the functional simulations and to capture their respective switching activities. the value change dump (.vcd) files generated through the functional simulations were used to estimate the average power dissipation. the worst-case (forward) latency, i.e. the critical path delay and the area of the qdi adders were also estimated. a default wire load model was considered while estimating the design metrics to include the effect of parasitic in the simulations. the design metrics viz. latency, area, and average power dissipation, estimated for the various qdi adders, which correspond to the rtz and rto protocols are given in table 4. the input registers and the completion detectors of the various qdi adders corresponding to the rtz and rto protocols are respectively identical. so the differences between their design metrics can be attributed to the respective differences between their function blocks. before discussing the results, it should be noted that the focus of this article is not to comment on the efficiency of various adder architectures or about the type of the adders with relation to latency or area or power optimization, and these have already been discussed in the published literature. rather, the intent of this article is to provide a comparison between the design metrics of different qdi adders based on their realization using rtz and rto protocols, and eventually to arrive at a general conclusion regarding which of these handshake protocols is more preferable to potentially achieve enhanced optimizations in the design metrics regardless of the extent of optimization achievable. the improvements in the design metrics which may be achieved by one protocol over the other could in part be explained as due to the differences in the implementation. however, the extent of optimizations in the design metrics achievable would also depend on the digital cell library targeted, the technology node and the pvt corner chosen to perform comparative evaluation of quasi-delay-insensitive asynchronous adders... 35 the simulations. thus the results given in table 4 are to be used as a reference to guide the choice of a 4-phase handshake protocol for the effective design of qdi circuits. table 4 design metrics of 32-bit qdi adders corresponding to rtz and rto protocols, estimated using synopsys tools based on implementation using a 32/28nm cmos process qdi adder reference; and adder type 4-phase rtz handshake protocol 4-phase rto handshake protocol latency (ns) area (µm 2 ) power (µw) latency (ns) area (µm 2 ) power (µw) rcas [49]; si 14.61 2529 2190 14.15 2529 2185 [52]; si 9.26 2504.60 2181 8.74 2374.48 2167 [50]; si 9.04 2293.14 2172 8.88 2293.15 2168 [52]; wi 8.24 2423.27 2177 8.03 2358.21 2167 [53]; wi 7 2016.63 2171 6.95 2016.63 2167 [54]; wi 9.66 2642.85 2192 9.66 2642.85 2191 [55]; wi 4.43 2097.96 2174 3.79 2097.96 2170 [51]; wi 3.32 2049.16 2171 3.31 2049.16 2167 [33]; eo 3.10 1658.80 2161 2.93 1658.80 2157 [44]; eo 2.14 2436.48 2173 2.13 2649.96 2176 clas [56], [55]; wi: regular 3.31 2951.88 2191 3.19 2984.41 2184 [56], [55]; wi: hybrid 3.08 2845.14 2189 2.97 2873.61 2182 [56], [55]; wi: regular with alias logic 2.46 2992.55 2192 2.36 3025.08 2185 [56], [55]; wi: hybrid with alias logic 2.38 2880.72 2190 2.29 2909.19 2183 [56], [51]; wi: regular 3.14 2915.29 2188 3.10 2947.82 2182 [56], [51]; wi: hybrid 2.93 2807.02 2186 2.89 2835.49 2180 [56], [51]; wi: regular with alias logic 2.32 2955.95 2190 2.30 2988.48 2183 [56], [51]; wi: hybrid with alias logic 2.25 2842.60 2187 2.22 2871.07 2181 [57]; eo: regular 2.75 2569.65 2177 2.73 2553.39 2169 [57]; eo: hybrid 2.53 2455.80 2175 2.51 2441.56 2167 cslas [58] – [33], [60]; eo: non-uniform 3.23 3384.44 2312 3.15 3384.44 2303 [58] – [33], [60]; eo: uniform 2.46 3000.17 2293 2.38 3000.17 2285 legends used: si – strong-indication; wi – weak-indication; eo – early output hybrid clas incorporate a 4-bit least significant rca, which improves the design metrics of regular clas overall, it can be observed from table 4 that the qdi adders based on the rto protocol feature less latency (and hence less cycle time) and power dissipation and occupy almost the same area than their qdi adder counterparts based on the rtz protocol. the completion detector of a qdi circuit corresponding to the rtz protocol consists of a series of 2-input or gates whose outputs are synchronized by a c-element tree. on the other hand, the completion detector of a qdi circuit adhering to the rto 36 p. balasubramanian protocol comprises a series of 2-input and gates whose outputs are synchronized by a tree of c-elements. further, any 2-input or gates present in the functional block(s) of a qdi adder corresponding to the rtz protocol would be replaced by 2-input and gates in the functional block(s) of a qdi adder counterpart adhering to the rto protocol. in static cmos implementations, it is well known that the or gate is more expensive than the and gate in terms of delay, area, and power dissipation [61] due to the series stacking of pmos transistors in the pull-up network of the former contrary to the parallel stacking of pmos transistors in the pull-up network of the latter. hence the use of 2-input and gates instead of 2-input or gates in the qdi adders and their respective completion detectors implies better optimized design metrics can be expected for the rto protocol compared to the rtz protocol. in table 4, it can be noticed that in some scenarios the areas of the qdi adders corresponding to the rtz and rto protocols are the same. for examples, the nonuniform 32-bit csla with the input partition of 8-7-6-4-3-2-2 and the uniform 32-bit csla with the input partition of 8-8-8-8 occupy similar areas with respect to both the handshake protocols. the non-uniform and uniform qdi cslas, highlighted in table 4, are constructed using the early output full adder of [33], and the strongly indicating 2:1 multiplexer (mux) of [60]. with respect to the rtz protocol, the early output full adder of [33] consists of four ao22 gates, four 2-input c-elements and two 2-input or gates, as shown in figure 3e. based on the rto protocol, the early output full adder of [33] would comprise four oa22 gates, four 2-input c-elements and two 2-input and gates, as shown in figure 3f. the strongly indicating 2:1 mux design of [60], which is called sidco, requires seven 2-input c-elements and four 2-input or gates for realization based on the rtz protocol. on the other hand, for implementation based on the rto protocol, the strongly indicating 2:1 mux design would require seven 2-input c-elements and four 2input and gates. the ao22 and oa22 gates of the digital cell library [48] have the same area of 2.54µm 2 , and the 2-input or gate and the 2-input and gate occupy the same area of 2.03µm 2 . as a result, the areas of the full adder and the 2:1 mux of a qdi csla would be the same regardless of the handshake protocol adopted. this explains why the non-uniform and uniform qdi cslas in table 4 feature the same area with respect to both rtz and rto protocols. although the areas of ao22 and oa22 gates, and the areas of the 2-input or gate and the 2-input and gate are the same in [48], their corresponding delay and power dissipation values are different. this is the reason why the qdi cslas based on the rto protocol have less latency and power dissipation than the qdi cslas based on the rtz protocol, as seen in table 4. having similar cell areas for the dual logic gates viz. or and and, ao21 and oa21, ao22 and oa22 etc. in [48] is rather uncommon in the case of commercial standard cell libraries. the standard digital cell library [48] does not have foundry support and is meant for use for academic teaching and research. hence, it may be safely hypothesized that if a commercial digital cell library is used for the physical implementation of the qdi adders given in table 4, then the rto protocol would facilitate higher percentage optimizations in the design metrics than the rtz protocol and therefore the improvements in the design metrics reported in table 4 would tend to serve as a baseline. comparative evaluation of quasi-delay-insensitive asynchronous adders... 37 5. conclusions this article discussed the implementation of various qdi adders, which correspond to diverse architectures and timing regimes by utilizing the delay-insensitive dual-rail code, based on the 4-phase rtz and rto handshake protocols. the logic transformation rules governing the circuit conversions between rtz and rto protocols were presented, and their proofs by induction were also provided. the simulations were performed by using a 32/28nm cmos process. the simulation results show that qdi adders corresponding to the rto protocol generically feature improved design parameters than the qdi adder counterparts which adhere to the rtz protocol. hence it is concluded that the 4-phase rto protocol is potentially more efficient than the 4-phase rtz protocol to implement handshaking in qdi asynchronous (arithmetic) circuits. references [1] itrs design report. available: http://www.itrs2.net [2] s. kundu and a. sreedhar, nanoscale cmos vlsi circuits: design for manufacturability, mcgrawhill, new york, usa, 2010. [3] a.j. martin, s.m. burns, t.k. lee, d. borkovic and p.j. hazewindus, “the first asynchronous microprocessor: the test results,” acm sigarch computer architecture news, vol. 17, pp. 95-98, 1989. [4] a.j. martin and m. nystrom, “asynchronous techniques for system-on-chip design,” proceedings of the ieee, vol. 94, pp. 1089-1120, 2006. [5] c.h. van kees berkel, m.b. josephs and s.m. nowick, “scanning the technology applications of asynchronous circuits”, proceedings of the ieee, vol. 87, pp. 223-233, 1999. [6] s.b. furber, d.a. edwards and j.d. garside, “amulet3: a 100 mips asynchronous embedded processor,” in proceedings of the international conference on computer design, pp. 329-334, 2000. [7] l. necchi, l. lavagno, d. pandini and l. vanzago, “an ultra-low energy asynchronous processor for wireless sensor networks,” in proceedings of the 12th ieee international symposium on asynchronous circuits and systems, 2006, pp. 1-8. [8] b.z. tang and f. lane, “low power qdi asynchronous fft,” in proceedings of the 22nd ieee international symposium on asynchronous circuits and systems, 2016, pp. 87-88. [9] w. jiang, d. bertozzi, g. miorandi, s.m. nowick, w. burleson and g. sadowski, “an asynchronous noc router in a 14nm finfet library: comparison to an industrial synchronous counterpart,” in proceedings of the design, automation and test in europe conference and exhibition, 2017, pp. 732-733. [10] n.c. paver, p. day, c. farnsworth, d.l. jackson, w.a. lien and j. liu, “a low-power, low noise, configurable self-timed dsp”, in proceedings of the 4th international symposium on advanced research in asynchronous circuits and systems, pp. 32-42, 1998. [11] a.j. martin and m. nystrom, “asynchronous techniques for noise tolerant nanoelectronics,” technical report situs-tr-04-01, situs logic, pasadena, ca, usa, 2004. [12] g.f. bouesse, g. sicard, a. baixas and m. renaudin, “quasi delay insensitive asynchronous circuits for low emi”, in proceedings of the 4th international workshop on electromagnetic compatibility of integrated circuits, 2004, pp. 27-31. [13] k.j. kulikowski, v. venkataraman, z. wang, a. taubin and m. karpovsky, “asynchronous balanced gates tolerant to interconnect variability”, in proceedings of the ieee international symposium on circuits and systems, 2008, pp. 3190-3193. [14] i.j. chang, s.p. park and k. roy, “exploring asynchronous design techniques for process-tolerant and energy-efficient subthreshold operation”, ieee journal of solid-state circuits, vol. 45, pp. 401-410, 2010. [15] i. david, r. ginosar and m. yoeli, “self-timed is self-checking”, journal of electronic testing: theory and applications, vol. 6, pp. 219-228, 1995. [16] l.a. plana, p.a. riocreux, w.j. bainbridge, a. bardsley, s. temple, j.d. garside, z.c. yu, “spa – a secure amulet core for smartcard applications,” microprocessors and microsystems, vol. 27, pp. 431446, 2003. http://www.itrs2.net/ 38 p. balasubramanian [17] d. sokolov, j. murphy, a. bystrov and a. yakovlev, “design and analysis of dual-rail circuits for security applications”, ieee transactions on computers, vol. 54, pp. 449-460, 2005. [18] f. burns, a. bystrov, a. koelmans and a. yakovlev, “design and security evaluation of balanced 1-of-n circuits,” iet computers and digital techniques, vol. 6, pp. 125-135, 2012. [19] w. cilio, m. linder, c. porter, j. di, d.r. thompson and s.c. smith, “mitigating powerand timingbased side-channel attacks using dual-spacer dual-rail delay-insensitive asynchronous logic,” microelectronics journal, vol. 44, pp. 258-269, 2013. [20] j. sparsø and s. furber (eds.), principles of asynchronous circuit design: a systems perspective, kluwer academic publishers, 2001. [21] m.t. moreira and n.l.v. calazans, “quasi-delay-insensitive return-to-one design,” in proceedings of the design, automation and test in europe conference and exhibition phd forum, 2014, pp. 1-2. [22] m.t. moreira, j.j.h. pontes and n.l.v. calazans, “tradeoffs between rto and rtz in wchb qdi asynchronous design,” in proceedings of the 15th international symposium on quality electronic design, 2014, pp. 692-699. [23] r.a. guazzelli, m.t. moreira and n.l.v. calazans, “a comparison of asynchronous qdi templates using static logic,” in proceedings of the 8th ieee latin american symposium on circuits and systems, 2017, pp. 1-4. [24] a.j. martin, “the limitation to delay-insensitivity in asynchronous circuits,” in proceedings of the 6th mit conference on advanced research in vlsi, 1990, pp. 263-278. [25] p. balasubramanian, c. dang, “a comparison of quasi-delay-insensitive asynchronous adder designs corresponding to return-to-zero and return-to-one handshaking,” in proceedings of the 60th ieee international midwest symposium on circuits and systems, 2017, pp. 1192-1195. [26] t. verhoeff, “delay-insensitive codes – an overview”, distributed computing, vol. 3, pp. 1-8, 1988. [27] b. bose, “on unordered codes”, ieee transactions on computers, vol. 40, pp. 1-8, 1988. [28] p. balasubramanian, “comments on “dual-rail asynchronous logic multi-level implementation”,” integration, the vlsi journal, vol. 52, pp. 34-40, 2016. [29] c.l. seitz, “system timing”, in introduction to vlsi systems, c. mead and l. conway (editors), pp. 218-262, addison-wesley, reading, massachusetts, usa, 1980. [30] p. balasubramanian and d.a. edwards, “efficient realization of strongly indicating function blocks”, in proceedings of the ieee computer society annual symposium on vlsi, 2008, pp. 429-432. [31] p. balasubramanian and d.a. edwards, “a new design technique for weakly indicating function blocks”, in proceedings of the 11th ieee workshop on design and diagnostics of electronic circuits and systems, 2008, pp. 116-121. [32] c. brej, “early output logic and anti-tokens,” phd thesis, school of computer science, the university of manchester, 2006. [33] p. balasubramanian, “a robust asynchronous early output full adder,” wseas transactions on circuits and systems, vol. 10, pp. 221-230, 2011. [34] c. jeong and s.m. nowick, “block-level relaxation for timing-robust asynchronous circuits based on eager evaluation”, in proceedings of the 14th ieee international symposium on asynchronous circuits and systems, 2008, pp. 95-104. [35] p. balasubramanian, k. prasad and n.e. mastorakis, “robust asynchronous implementation of boolean functions on the basis of duality,” in proceedings of the 14th wseas international conference on circuits, 2010, pp. 37-43. [36] p. balasubramanian, r. arisaka and h.r. arabnia, “rb_dsop: a rule based disjoint sum of products synthesis method”, in proceedings of the 12th international conference on computer design, 2012, pp. 39-43. [37] p. balasubramanian and d.a. edwards, “self-timed realization of combinational logic”, in proceedings of the 19th international workshop on logic and synthesis, 2010, pp. 55-62. [38] p. balasubramanian, “self-timed logic and the design of self-timed adders”, phd thesis, school of computer science, the university of manchester, 2010. [39] p. balasubramanian and n.e. mastorakis, “a set theory based method to derive network reliability expressions of complex system topologies,” in proceedings of the applied computing conference, 2010, pp. 108-114. [40] j. cortadella, a. kondratyev, l. lavagno and c. sotiriou, “coping with the variability of combinational logic delays,” in proceedings of the ieee international conference on computer design: vlsi in computers and processors, 2004, pp. 505-508. comparative evaluation of quasi-delay-insensitive asynchronous adders... 39 [41] v.i. varshavsky (ed.), self-timed control of concurrent processes: the design of aperiodic logical circuits in computers and discrete systems, chapter 4: aperiodic circuits, pp. 77-85, (translated from the russian by a.v. yakovlev), kluwer academic publishers, 1990. [42] p. balasubramanian and k. prasad, “early output hybrid input encoded asynchronous full adder and relative-timed ripple carry adder,” in proceedings of the 14th international conference on embedded systems, cyber-physical systems, and applications, 2016, pp. 62-65. [43] p. balasubramanian and s. yamashita, “area/latency optimized early output asynchronous full adders and relative-timed ripple carry adders,” springerplus, vol. 5, pages 26, 2016. [44] p. balasubramanian and k. prasad, “latency optimized asynchronous early output ripple carry adder based on delay-insensitive dual-rail data encoding,” international journal of circuits, systems and signal processing, vol. 11, pp. 65-74, 2017. [45] k.s. stevens, r. ginosar and s. rotem, “relative timing,” ieee transactions on vlsi systems, vol. 11, pp. 129-140, 2003. [46] d. bhadra and k.s. stevens, “design of a low power, relative timing based asynchronous msp430 processor,” in proceedings of the design, automation and test in europe conference and exhibition, pp. 794-799, 2017. [47] m.m. mano and m.d. ciletti, digital design, 4th edition, prentice-hall, new jersey, usa, 2007. [48] synopsys digital standard cell library saed_edk32/28_core databook, revision 1.0.0, 2012. [49] n.p. singh, “a design methodology for self-timed systems,” msc dissertation, massachusetts institute of technology, usa, 1981. [50] w.b. toms, “synthesis of quasi-delay-insensitive datapath circuits”, phd thesis, school of computer science, the university of manchester, uk, 2006. [51] p. balasubramanian, “a latency optimized biased implementation style weak-indication self-timed full adder,” facta universitatis, series: electronics and energetics, vol. 28, pp. 657-671, 2015. [52] j. sparsø and j. staunstrup, “delay-insensitive multi-ring structures”, integration, the vlsi journal, vol. 15, pp. 313-340, 1993. [53] b. folco, v. bregier, l. fesquet and m. renaudin, “technology mapping for area optimized quasi delay insensitive circuits”, in proceedings of the ifip 13th international conference on very large scale integration of system-on-chip, 2005, pp. 146-151. [54] w.b. toms and d.a. edwards, “a complete synthesis method for block-level relaxation in self-timed datapaths,” in proceedings of the 10th international conference on application of concurrency to system design, 2010, pp. 24-34. [55] p. balasubramanian and d.a. edwards, “a delay efficient robust self-timed full adder”, in proceedings of the ieee 3rd international design and test workshop, 2008, pp. 129-134. [56] p. balasubramanian, d.a. edwards and w.b. toms, “self-timed section-carry based carry lookahead adders and the concept of alias logic,” journal of circuits, systems, and computers, vol. 22, pp. 1350028-1–1350028-24, 2013. [57] p. balasubramanian, d. dhivyaa, j.p. jayakirthika, p. kaviyarasi and k. prasad, “low power self-timed carry lookahead adders,” in proceedings of the 56th ieee international midwest symposium on circuits and systems, 2013, pp. 457-460. [58] p. balasubramanian, “asynchronous carry select adders,” engineering science and technology, an international journal, vol. 20, pp. 1066-1074, 2017. [59] p. balasubramanian and n.e. mastorakis, “qdi decomposed dims method featuring homogeneous/ heterogeneous data encoding”, in proceedings of the international conference on computers, digital communications and computing, 2011, pp. 93-101. [60] p. balasubramanian and d.a. edwards, “power, delay and area efficient self-timed multiplexer and demultiplexer designs,” in proceedings of the 4th ieee international conference on design and technology of integrated systems in nanoscale era, 2009, pp. 173-178, 2009. [61] n.h.e. weste and k. eshraghian, principles of cmos vlsi design: a systems perspective, 2nd edition, addison-wesley publishing company, massachusetts, usa, 1993. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 585-598 https://doi.org/10.2298/fuee1804585t an augmented reality system for improving health and safety in the electro-energetics industry dušan tatić faculty of electronic engineering, university of niš, niš, serbia abstract. occupational safety has a crucial role in every technological process in industry environments. recently, smart mobile devices have become standard hardware that can help inform workers about their duties and procedures during work. in this paper, we present an augmented reality (ar) system for mobile devices as a tool for safeguarding health and safety, and the secure performance of tasks in a technological process by following virtual instructions in the workplace. in a case study, we explored the task procedures and defined the risk factors in the electro-energetics industry. based on that, we implement a corresponding ar system that should be used to issue occupational safety and work instructions to workers during task execution. with that aim in mind, we designed a client-server architecture to project the related instructions on the screen of the mobile device, to ensure the confirmation of implementing them, as well as to keep a record of all the steps the worker performed. as an illustrative example, we present the application of the designed ar system to particular tasks in electro-energetics industrial plants. key words: augmented reality, occupational safety, mobile systems, industry. introduction smart mobile devices, such as mobile phones and tablet pcs, have become important tools for resolving many tasks in the daily work routine in many areas. in industry especially, there are many technological processes whose complexity demands a high level of knowledge and expertise from workers, as well as imposes considerable challenges in preserving occupational safety. the diversity of the devices and equipment that are parts of the technological process require detailed knowledge of specific elements involved in the process, and of the safety measures that have to be appreciated and consequently performed strictly as defined by various regulatory issues. received january 12, 2018; received in revised form june 18, 2018 corresponding author: dušan tatić faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: dule_tatic@yahoo.com) 586 d. tatić in such situations, smart devices offer a convenient way to quickly provide the relevant information necessary for resolving a particular task with the undertaken occupational safety measures. the imperative is that the information should be presented in an intuitively clear way, to allow the simple implementation of related instructions. according to that, the fast search for relevant information depends on the technology implemented in a particular smart device. also, the presentation of such information, in terms of task completion, should be simple and clear enough. the interface between a user and the real word is provided by the relatively new and extremely fast-developing technology of augmented reality (ar). this technology gives the user augmented information by mixing the real image captured by the camera of the mobile device and the virtual content prepared to explain the context of the captured real space in real time [1]. particular applications of ar have been developed for industry purposes, where this technology is primarily used to give assistive information to the worker [2, 3, 4, 5, 6] in fields such as maintenance and repair of various devices and systems [7, 8, 9], manufacturing and assembling [10, 11], collaboration, management and product design [12, 13, 14], and training procedures [15, 16]. considerably fewer research efforts are devoted to the usage of ar in improving the occupational safety in industry [17, 18, 19]. even less research in this area addresses human resource management. this observation was a motivation for our project focused on of the author towards an application of ar in combined human resources management and occupational safety improvement in industry environments [20, 21]. in this paper, we extend our research in the same direction, that is, towards further applications. the goal is to show that the same principles and the corresponding system as in [21] can equally be applied in another industry environment and with different tasks which should be performed under considerably stronger demands from occupational safety point of view. for this research, we chose the electro-energetics industry in order to test our system for providing safety and work instructions by taking into account both the complexity of the task that needs to be performed and the expertise of the worker to whom the task is assigned. compared to previous work reported in [21], main differences and new issues addressed in the present considerations can be summarized as follows. since the work procedures in the electro-energetics industry are very strictly formulated, in the present research we focus on preventing various exceedance situations which occur due to requirements to work with high voltage and strong current installations and systems. another aspect we address in the present paper is an extension of the existing methods towards the usage of cross platform tools like easyar sdk [22], which is a tool for creating augmented reality mobile applications for both ios and android platforms. in the previous system, instead of the easyar, vuforia [23] was used for marker tracking in our ar system. further, the symfony framework [24] is used on the server side instead of native php in previous work. this framework enables implementation of more sophisticated web service that can handle data stored on the server side. also, it can be a server for applications based on different mobile platforms. regarding implementation issues, the difference with respect to the previous system [21] is that in the present case we include two image plaits instead of a fiducial marker to test the proposed solution for the ar system. this way, the worker can easily find the corresponding object of recognition to be informed about tasks in a more intuitive way without devoting much time to searching for it. an augmented reality system for improving health and safety in the electro-energetics industry 587 improvement of the previous system previous work was presented in [21] as an original solution in the design of an augmented reality system for the implementation of occupational safety instructions in an industry environment. this solution elaborates the architecture of the system and its application at the thermal plant ugljevik. the main goal was to reduce risk factors and prevent injuries by putting ar markers on the appropriately selected parts of the machine. in this way, by using the ar system, workers are led step by step thorough the safety and work procedures during task execution. related to that, in the present considerations, we improve the system by reducing the number of markers and by giving the information about the task execution before the job starts. we enable cross platform solutions on the server side, as well as at the client side. in this paper, the architecture of the ar system is discussed in detail, as well as the system realization specification. since in [21] just the basic implementation issues are presented, here we also present the implementation details, since more complex and upgraded system components are used. in particular, on the server side we implemented a symfony framework for rest service instead of using a native php for database connection. the service is used to give more universality of the system on the server side and it will result in independence in terms of changing the client application. this independence gives us the ability to use different mobile technologies such as android or ios on the client side. our goal was to use a cross platform solution for the client part such as a unity game engine that provides good support for augmented reality technology. to show the independence and modularity of the system, we changed the ar module on the client side. this will show that by changing the system components and modules, the system architecture remains the same. on the client side, instead of using vuforia for marker recognition, we used the easyar. easyar provides us with an image tracking solution that is used for recognition of image plates in industrial systems. in the previous work multiple makers are arranged over the different parts of the machine, but in the current project we reduce their number. the markers provide the information on the exact place in the industry environment to which it is related, instead of classical mobile application elements such as normal lists. instead of markers, in the present version of the system, we use two image plates for recognition of safety and work instructions, respectively. placing two image plates next to each other at a very visible place reduces the time for finding markers. further, if a plate is damaged, it is easier to replace that plate. the image plates are robust in the sense that they still can be recognized even when damaged until a reasonable extent. recall that the fiducial markers are very sensitive to destruction. by changing the type of industrial environment, we wanted to show that the concept proposed in [21] can be used in different fields of industry. in this paper, the case in point is the electro-energetics industry environment where protecting electrical installations from stress is a different kind of occupational safety issues than risk of injury when working on mechanical machines that was considered in our previous work [21]. this change of industry environment is intended to show that the system can be easily modified after which can be used in different exploitation circumstances. we will elaborate the whole system and its application to the electro-energetics industry in detail. the next section will provide a discussion about the advancements in the usage of the ar system. 588 d. tatić formulation of the problem work in the electro-energetics industry requires specially trained professionals because of numerous hazardous situations that can happen during everyday work. as a result, before beginning any task, special attention is paid to the safety measures. these measures are aimed at reducing the risk of injury, and hence reduce the time and costs caused by an improper handling or behavior in the industry space. based on these measures and respective rules, special instructions, also including a description of the specific equipment parts, are issued to workers working under high voltage conditions. although carefully formulated and strictly prescribed rules are issued before any task, hazardous situations can happen. in the case of well-trained and experienced workers, mistakes occur due to their over confidence. because of the monotony of any daily job routine, they often skip prescribed safety rules issued by the occupational safety officer. this can cause unexpected consequences that can lead to serious injuries, heavy defects in the industry space, and a time delay for completing the task. table 1 safety and work instructions for changing the circuit breaker in an electrical substation safety instructions work instructions 1. check the protective equipment. check the tool and its correctness. 2. disconnect installation from voltage source. installation of the insulating substrate. turn off the main switch. 3. lock-off main switch and tag-out the locked installation. checking the absence of voltage. 4. ground and short circuit. circuit breaker replacement. fix locate and repair faulty circuit breaker. 5. enclose from parts under voltage. check the circuit breaker voltage at the output. after installing a new circuit breaker, turn on the system again. sometimes the situation dictates that less trained and inexperienced workers have to undertake relatively complex tasks. in this case, they are exposed to risk if the proper information about the equipment and related safety instructions are not provided in a clear and easy to perceive manner. the current job routine follows a certain flow of specific procedures. first, the safety officer informs the workers about safety measures that have to be applied before their daily activities. after that, the technology officer assigns the tasks that have to be done. every step of each task is defined in the work manual for a concrete job. work manuals are usually provided in the form of a sheet of paper with the text and drawings for each safety and work instruction. as an illustration, table 1 shows the instruction steps for the safety rules on low voltage installation and work instructions for changing a circuit breaker in a typical electrical substation. an augmented reality system for improving health and safety in the electro-energetics industry 589 augmented reality in solving the problem augmented reality is recognized as a technology which can improve the way of issuing working and safety instructions for the given task. this improvement includes direct interaction with the particular industry space through a camera on the mobile device, with the additional virtual information about necessary safety rules being projected. by recognizing specifically provided and conveniently positioned ar markers, safety and work instructions related to a concrete task and the equipment, as well as the tools to be used, are projected. as shown in table 1, the safety instructions are projected first, and after their implementation is confirmed, the work instruction are projected. displaying ar instructions has multiple goals:  keep the attention of the workers to ensure they apply all the necessary steps during their work, by confirming the implementation of each issued instruction,  give more precise visual information directly at the work place which is supposed to be considerably more detailed and appropriate than the information which can be read in a hard copy printed instruction manual,  save the time of the safety officers in explaining the safety instructions, which is especially important when different tasks on different types of equipment should be assigned to a large group of workers,  keep the history of all the examined and realized task instructions in the database on an external server for subsequent analysis and monitoring of the job done. organization of the ar content to be projected follows the working procedures and related safety rules. it is assumed that, as is the typical customary practice, for each worker the related data about his education level, specific professional training, and work experience are provided as a part of his personal data record. amount of information to be projected is determined for each worker individually according to his educational level and professional skills and expertise. selection of the amount of information content is done by the technology and occupational safety officers during the assignment of tasks. therefore, highly qualified workers will get a reduced number of instructions focused on specific details of the working procedure and related safety measures, while general information will be omitted assuming that the worker is already well familiar with it. for less qualified workers, complete instructions will be issued in order to finish the job in a proper and safe manner. ar system for the electro-energetic industry in this section we describe our ar system that can be used to overcome the abovementioned problems regarding proper implementation of work and safety instructions related to various tasks in the electro-energetic industry. it should be noted that the proposed system can easily be modified and made applicable to various other branches of industry. organization of the system the system is organized as a client-server architecture as shown in fig. 1. the arbased system present safety and work instructions in an electro-energetics environment where working under high voltage and strong currents is typical practice. the main role of the system, together with this particular requirement, determines its structure. 590 d. tatić the server side consists of a database, which stores data about users and tasks, a multimedia repository containing virtual instructions in various multimedia formats, and rest service [25] which represents the software architecture that can control data flow during the client-server communication using a predefined format of communication. these transfers of data are between tasks stored on the server and workers that are using the client application. the client side is realized as a software tool that consists the communication (cm) module, that enables data to send and receive data from the server, the task (tm) module implemented as a data structure that can store information about the current task of the worker and his safety and work instructions, the user interface (ui) module, which allows the user to navigate, and the augmented reality (ar) module, which provides task instructions to the worker. application of the ar system fig. 1 illustrates the basic functionality and application of the ar system. fig. 1 the block diagram of the system the system starts upon the worker logging onto it by using his identification data and password. this data is collected by the user interface module and forwarded to the communication module. the communication module prepares the login data in the proper format and sends it to the server via the rest service. based on this data, the rest service checks if the user is defined in the list of workers. upon successful authentication, the rest service searches in the database for the task that is assigned to the user. all of the tasks are integrated into the database and are accompanied by a list of related safety and working instructions. every instruction consists of descriptive elements and linked multimedia material that is stored in the multimedia repository. when task data are found in the database, the rest service prepares data in a format readable by the client application. an augmented reality system for improving health and safety in the electro-energetics industry 591 the communication module receives and processes data from the server side. upon processing, the data are stored in the task module and they are ready to be sent to the user interface and the ar module. the parameters of one instruction at a time are sent to these two modules. when a current instruction is completed, the next one is taken from the task module. the module user interface shows data that explain to the worker how to use the ar module. the explanation involves images and text in order to better guide the worker. at the same time, the ar module is activated with parameters about the object recognition and multimedia material that is shown during ar tracking. upon tracking, an interactive checking system is projected in order to confirm that the worker has seen the instructions. confirmation allows the next instruction to be received from the task module. after confirmation of all the task instructions, the data are prepared by the communication module to be sent to the server. on the server side, the rest service receives the data and stores it inside the database. fig. 2 architecture of the system server the server stores all the related data necessary for the application of the ar-system. data are stored inside the database and multimedia repository. the transfer of data between the database and the client application is realized through the rest service. in the next chapters all of the necessary elements of the server side will be described. these server elements are given in fig. 2. 592 d. tatić database the database consists of the list of workers, list of tasks, list of instructions, list of realized tasks, and list of realized instructions. the list of workers represent data for authentication like the username and password. also, for each worker, information about his qualifications and level of expertise is stored. the list of tasks contains all the necessary data that describe possible tasks which could be assigned to the workers. this list is connected with the list of workers to determine a specific task for each worker. also, the list of tasks is linked with the list of instructions to regulate safety and work instructions for each task assigned to a worker. the list of instructions describes two instruction types, safety and work instructions. safety instructions consist of data given by the safety expert, while work instructions are defined by the technology officer. each instruction has a regular execution number, title description and defined target for recognition by the ar-module. also, with the target information, a link is provided that points to the virtual material in the multimedia repository which is used by the ar module during tracking. the list of realized tasks stores the job data for each worker when he confirms completion of a task. parameters about the date, time, type of the task, and the person who realized it are saved on this list. the list is linked with the list of realized instructions for more details about the finished task. the list of realized instructions contains data about realization of each instruction. stored data are the time of the beginning, time of completing, and the duration of the work. rest service the rest service is used to enable communication between the client application and the server side. through the rest service, authentication and authorization are done so that the worker can get all the necessary data for task realization. when the service accepts the worker username and password, it compares them with the data in the list of workers. upon successful registration, the service determines the task for the worker from the list of tasks. based on the assigned task, the corresponding safety and work instructions are read from the list of instructions. the data collected and prepared to be sent to the client application are:  token for worker authorization,  id of the worker,  parameters of task id, description and the title,  parameters of safety and work instruction id, title, description, order number, ar marker, link to the multimedia file. the client side accepts and processes the data after which they are ready to be used by the worker. when the worker completes all the safety and working steps, the data are sent to the rest service. the data sent back to the server to be stored in the list of realized tasks and the list of realized instructions are:  id of the worker,  parameters of the task id, date of the start, date of the finishing, and duration of the task.  parameter of instructions id date start, date finished, duration of the work. an augmented reality system for improving health and safety in the electro-energetics industry 593 multimedia repository the multimedia repository is used to store the virtual material related to the safety and work instructions. each task has a separate folder where virtual material is stored. the virtual material is available in the form of a 3d model and a video file for instructions or an image for the description of a part of the instruction. video files are used for client application streaming during the marker recognition. they are recorded in mp4 file format with h264 video codec. the video resolution is 720p with a bit rate of 3000 kbps. the sound is recorded in aac format with a frequency of 44.1 khz and a bit rate of 64 kbps because only the narrative voice is recorded. the 3d model file format depends on the amount of polygons used. the format 3ds provides better file compression for 3d model under 65000 polygons. the fbx format is used for 3d models for larger number of polygons. these models are included as a unity [26] asset bundle, from which they are downloaded and used on the client's side after the service call is received. all multimedia materials are linked to the client application through the links located in the list of instructions in the database. if necessary, the application downloads the material from the specified link and connects it to the application modules that will be used. for example, a module for augmented reality downloads or streams the video material from a particular link and displays it during ar marker recognition. client side the architecture of the client side is determined by the mobile application defined by the four modules explained below (fig. 2). communication module this module allows the application to communicate with the server side in order to access data in the database. also, this module prepares the data in the predefined format for sending. for worker registration to the ar system, the username and password should be sent. upon successful registration, the task data obtained from the rest service are parsed in this module and sent to other modules for further execution. after the task is completed and confirmed, the data are parsed by this module and prepared to be sent to the rest service which transmits these data to the database. task module the goal of the task module is to store the data downloaded from the server and to forward them to other modules for execution. data from the server are stored in the list of safety and work instructions. for each instruction, data such as the name, description, serial number, marker, link to the multimedia material, and employee qualifications are stored. for displaying instructions to the workers for task execution, data are transferred by the user interface module. the ar module is supplied with data concerning the tracking, ar marker, and multimedia material. when a confirmation of the instructions is performed, this structure records data such as the start time, finish time and the time spent executing the instruction. when the last 594 d. tatić instruction is implemented, the executed task data is sent to the module for interacting with the rest server for further parsing and sending the data to the server database. user interface the module user interface serves to define the visual elements of the application. this takes into account the application layout elements and their appearance. the login form serves to register a worker on the system. the registration form is connected with the database through the communication module. user data are forwarded to this module when the worker fills in the form. after the registration has been completed, the necessary data are transferred from the server into the mobile application, and the description part on the user interface module is projected. the description serves to show the information about the current instruction execution. in order to simplify the search for the ar marker in the environment and the workplace, the help function is implemented to displays the image of the active ar marker and explanatory text on the mobile screen. the checking system is used to control instruction delivery in the proper order. each safety instruction is followed by the work instruction. to process the work instruction, the safety instruction should first be confirmed. the checking system is activated when the ar tracking is finished in order to confirm that the current step is completed. two steps of confirmation are implemented to prevent accidental validation of the given instruction. after a positive confirmation, the next instruction in the sequence is read. then, after each safety instruction, the next work instruction is issued, and the ar module activated. ar module the ar module is the core component for user interaction with the real world. it is designed to project safety and work instructions over elements in the industry space. each instruction stored in the task module has a description, corresponding virtual material, and parameters for the ar marker. the ar module in this application is realized by using the easyar sdk. the main idea is that the worker is obliged to use ar technology to inform himself about secure and efficient job realization before entering the substation. the application of the augmented reality technology implies the recognition of two plates attached on the entrance of the electro-energetic substation. during the recognition process only one image marker is active at the time and corresponds to the active instruction. safety instructions is obtained by tracking first plate image while work instructions will be achieved image plate (fig. 3). fig. 3 augmented reality image markers above is safety sign (english translation of the text: caution! check the safety procedures.) below is working sign (english translation of the text: caution! check the safety procedures!) an augmented reality system for improving health and safety in the electro-energetics industry 595 as soon as the ar module starts over the picture of the camera, the user interface shows a description above the image of the real world. the worker is informed to find the marker in the exact place in the industry environment. when the ar marker is recognized, this description vanishes from the screen. on the place of the recognized marker, the virtual instructions are shown. the worker is informed about the current task by the ar system directly at his workplace. various multimedia formats can be projected over the ar marker in the form of 3d, video or image with the text. the ar marker related to the current instruction is active at the time, so the other markers cannot be recognized by this module. when ar tracking stops, the system alerts the checking system to be shown over the display. the worker then goes through a double check system to get the next ar marker for tracking in order to get a new instruction. if he accidentally stops tracking and the checking system is displayed, the ar module is still active in the background. accordingly, the worker can point the device camera at the active marker. upon recognition of the active ar marker, the checking system will vanish from the screen and the virtual instruction will be projected during the tracking. implementation the ar system using the unity engine while the server part is realized by the symfony framework. the validation and verification of the ar system was made on the basis of the safety rules on low voltage installation and work instructions for changing the circuit breaker in the electrical substation described in table 1. this instruction is intended for workers who are involved in the maintenance of electric medium and low voltage substations. table 1 consists of five security and work instructions that are needed to ensure proper and safe operation. each instruction contains a single video file that is displayed through the augmented reality technology implemented in the ar system. in order to use the ar system, an internet connection is required. the internet connection is used to download a task from the server, and streaming multimedia material from the multimedia repository. also, an internet connection is required to send information about the completed task for entry into the database. if there is no internet connection at the workplace, it is necessary to download the content of the task before the job starts. downloading the material can be done at the office, from the internet, before the worker goes into the field. also, after completing his duties, a worker must access the internet, from the same room, to send information about the completed task. upon registration, the system requires the worker to recognize the first image marker to get first safety instruction from table 1. fig. 4 shows the screen of the mobile device through which the worker is instructed where to find and point the camera towards the first image marker. 596 d. tatić fig. 4 augmented reality searching instructions (english translation of the text above image: find the plate from the image and point the camera towards) when the marker is recognized, the worker gets first safety instruction in the form of a video instruction during tracking. at fig. 5 is shown augmented reality projection of video material about the first safety instruction for checking protective equipment. fig. 5 augmented reality instruction for checking the protective equipment after the tracking, the worker performs verification through a checking system implemented in the ar system (fig. 6). first step of verification is clicking the check box to verify that he was checked equipment according to the safety instruction. second step of verification is using the button for confirmation. then, the user is required to find the second image marker representing the next work instruction. by verifying this instruction, the system directs the user to go back to the first marker to execute the next safety instruction. in this way the user is guided through all instructions related to the current task. an augmented reality system for improving health and safety in the electro-energetics industry 597 fig. 6 usage of checking system for confirmation of occupational safety instruction (english translation of text above: did you check protective equipment?, middle: equipment check, below: yes, check, no) conclusion as a continuation of our previous work, on which this paper relies, we present in detail the usage of the ar system in the case of the electro-energetics industry. by following the previous methodology, we specified custom problems that concern the daily job routine. based on that, we determined that tasks can be provided through a sequence of virtual safety and work instructions. client-server architecture for implementation of such a system has been described. for the server side we used the rest service for issuing task elements for client application. client application is organized in several modules where the central part is dedicated to the module of augmented reality. this module is used for worker interaction with industry space in order to get virtual instructions at the workplace. the worker has to confirm every step after each instruction. presently there are no possibilities to test the system on the wide range of tasks in the environment accessible by the author. the proposed system however was experimentally tested by few workers for the case of changing the circuit breaker in an electrical substation. the system was presented to experts working in the area of electro-energetics systems and comments approving its usage are obtain. it is expected that a system based on augmented reality technology will be an efficient aid for issuing safety and work instructions. acknowledgement: the work presented in this paper was supported by the serbian ministry of education and science (project iii 044006). the author is grateful to anonymous reviewers whose constructive comments were useful in improving the presentation in this paper. 598 d. tatić references [1] r.t. azuma, “survey of augmented reality”, presence: teleoperators and virtual environments, vol. 6, no. 4, pp. 355-385, 1997. [2] j. gimeno, p. morillo, j.m. orduña, and m. fernández, “a new ar authoring tool using depth maps for industrial procedures”, computers in industry, vol. 64, no. 9, pp. 1263-1271, 2013. [3] g.m. re, j. oliver, and m. bordegoni, “impact of monitor-based augmented reality for on-site industrial manual operations”, cognition, technology & work, vol. 18, no. 2, pp. 379-392, 2016. [4] m. fiorentino, a.e. uva, m. gattullo, s. debernardis and g. monno, “augmented reality on large screen for interactive maintenance instructions”, computers in industry, vol. 65, no. 2, pp. 270-278, 2016. [5] x. wang, m. truijens, l. hou, y. wang, and y. zhou, “integrating augmented reality with building information modeling: onsite construction process controlling for liquefied natural gas industry”, automation in construction, vol. 40, pp. 96-105, 2014. [6] s. benbelkacem, m. belhocine, a. bellarbi, n. zenati-henda, and m. tadjine, “augmented reality for photovoltaic pumping systems maintenance tasks”, renewable energy, vol. 55, pp. 428-437, 2013. [7] j. zhu, s.k. ong, and a.y.c. nee, “a context-aware augmented reality system to assist the maintenance operators”, international journal on interactive design and manufacturing, vol. 8, no. 4, pp. 293-304, 2014. [8] c. koch, m. neges, m. könig, and m. abramovici, “natural markers for augmented reality-based indoor navigation and facility maintenance”, automation in construction, vol. 48, pp. 18-30, 2014. [9] s. henderson, and s. feiner, “exploring the benefits of augmented reality documentation for maintenance and repair”, ieee transactions on visualization and computer graphics, vol. 17, no. 10, pp. 1355-1368, 2011. [10] a.w.w. yew, s.k. ong, and a.y.c. nee, “towards a griddable distributed manufacturing system with augmented reality interfaces”, robotics and computer-integrated manufacturing, vol. 39, pp. 43-55, 2016. [11] s. webel, u. bockholt, t. engelke, n. gavish, m. olbrich, and c. preusche, “an augmented reality training platform for assembly and maintenance skills”, robotics and autonomous systems, vol. 61, no. 4, pp. 398403, 2013. [12] x. wang, p.e. love, m.j. kim, and w. wang, “mutual awareness in collaborative design: an augmented reality integrated telepresence system”, computers in industry, vol. 65, no. 2, pp. 314-324, 2014. [13] d.b. espíndola, l. fumagalli, m. garetti, c.e. pereira, s.s. botelho, and r.v. henriques, “a model-based approach for data integration to improve maintenance management by mixed reality”, computers in industry, vol. 64, no. 4, pp. 376–391, 2013. [14] h. park, and h.c. moon, “design evaluation of information appliances using augmented reality-based tangible interaction”, computers in industry, vol. 64, no. 7, pp. 854-868, 2013. [15] f. de crescenzio, m. fantini, f. persiani, l. di stefano, p. azzari, and s. salti, “augmented reality for aircraft maintenance training and operations support”, ieee computer graphics and applications, vol. 31, no. 1, 96-101, 2011. [16] g. westerfield, a. mitrovic, and m. billinghurst, “intelligent augmented reality training for motherboard assembly”, international journal of artificial intelligence in education, vol. 25, no. 1, 157-172, 2015. [17] s. kim, m.a. nussbaum, and j.l. gabbard, “augmented reality „smart glasses‟ in the workplace: industry perspectives and challenges for worker safety and health”, iie transactions on occupational ergonomics and human factors, vol. 4, no. 4, 253-258, 2016. [18] s.a. talmaki, s. dong, and v.r. kamat, “geospatial databases and augmented reality visualization for improving safety in urban excavation operations”, in proceedings of the construction research congress 2010: innovation for reshaping construction practice, 2010, pp. 91-101. [19] w. kim, n. kerle, and m. gerke, “mobile augmented reality in support of building damage and safety assessment”, natural hazards and earth system sciences, vol. 16, no. 1, pp. 287-298, 2016. [20] d. tatić, and b. tešić, “improvement of occupational safety systems by the application of augmented reality technologies”, in proceedings of the 23rd telecommunications forum, telfor, 2015, pp. 962-965. [21] d. tatić, and b. tešić, “the application of augmented reality technologies for the improvement of occupational safety in an industrial environment”, computers in industry, vol. 85, pp. 1-10, 2017. [22] easyar sdk, https://www.easyar.com/, accessed january 2018. [23] vuforia sdk, https://www.vuforia.com/, accessed january 2018. [24] symfony, https://symfony.com/, accessed january 2018. [25] r.t. fielding, “architectural styles and the design of network-based software architectures”, doctoral dissertation: university of california, irvine, 2000. [26] unity, https://unity3d.com/, accessed january 2018. https://www.easyar.com/ https://www.vuforia.com/ https://symfony.com/ https://unity3d.com/ instruction facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 675 688 doi: 10.2298/fuee1604675s nonrigorous symmetric second-order abc applied to large-domain finite element modeling of electromagnetic scatterers  slobodan v. savić 1 , milan m. ilić 1,2 1 university of belgrade, school of electrical engineering, belgrade, serbia 2 colorado state university, department of electrical and computer engineering, fort collins, co, usa abstract. nonrigorous symmetric second-order absorbing boundary condition (abc) is presented as a feasible local mesh truncation in the higher-order large-domain finite element method (fem) for electromagnetic analysis of scatterers in the frequency domain. the abc is implemented on large generalized curvilinear hexahedral finite elements without imposing normal field continuity and without introducing new variables. as the extension of our previous work, the method is comprehensively evaluated by analyzing several benchmark targets, i.e., a metallic sphere, a dielectric cube, and nasa almond. numerical examples show that radar cross section (rcs) of analyzed scatterers can be accurately predicted when the divergence term is included in computations nonrigorously. an influence of specific terms in the second-order abc, which absorb transverse electric (te) and transverse magnetic (tm) spherical modes, is also investigated. examples show significant improvements in accuracy of the nonrigorous second-order abc over the firstorder abc. key words: absorbing boundary condition, electromagnetic scattering, finite element method, numerical methods 1. introduction the finite element method (fem) is a widely used computational tool in the frequency-domain analysis of electromagnetic (em) problems [1-4]. to preserve the sparsity of the fem system when analyzing open-region (radiating and scattering) problems, the necessary artificial truncation of the computational domain is often done by applying approximate local absorbing boundary conditions (abcs) [4]. the symmetric second-order vector absorbing boundary condition (abc) is a very popular choice among abcs because it preserves the symmetry of the fem system while maintaining received september 29, 2015; received in revised form december 29, 2015 corresponding author: slobodan v. savić university of belgrade, school of electrical engineering, belgrade, serbia (email: ssavic@etf.rs) 676 s. savić, m. ilić satisfactory accuracy of the solution [5, 6]. however, this formulation requires computation of the divergence term on the faces of finite elements (fes) belonging to the absorbing boundary surface (abs). this, in turn, is a problem on its own because the required normal continuity of the fields is generally not enforced across the edges of adjacent elements in a standard weak-form fem discretization where edge-based curl-conforming vector basis functions are employed. in addition, a divergence calculation of the nonconforming basis functions in such formulations cannot be done analytically for the generalized curved fes, even across the faces of elements at the abs (excluding the troublesome edges) where these functions are continuous and differentiable. this problem has been addressed before, however all reported conclusions pertain to evaluation of the second-order abc in small-domain spatial discretization frameworks [7-9], where the fem volume elements are electrically small (e.g., their edges are on the order of /10,  being the wavelength at the operating frequency of the implied timeharmonic excitation). this spatial discretization results in a rather fine mesh throughout the computational domain and at the abs as well. it appears that in such meshes omitting the divergence term in the second-order abc, or computing it nonrigorously without enforcing the normal continuity of the fields yields approximately the same error [8]. on the other hand, the method which rigorously implements the second-order abc on small curved tetrahedra, while preserving the symmetry of the system, has been recently proposed in [9]. however, this method employs auxiliary variables thus mandating significant changes in the existing fem code. conversely however, in the open literature there appear to be no analyses of the second-order abc performance in coarse large-domain fem meshes, although fine meshes and small elements are really not required at the abs, which is typically moved away from the analyzed structure and resides in a homogeneous free space. the em field is usually not changing rapidly at the abs, hence the advantages of large-domain modeling can be fully exploited. with the above in mind, we proposed that large-domain discretization utilizing curved elements whose edges are up to 2 long, coupled with truly higher order (e.g., up to the 10 th order) polynomial field expansion, can be efficiently used in the abs tessellation. the number of edges shared by faces of adjacent finite elements at the abs is thus reduced, which can, in turn, significantly reduce the error introduced by direct computation of required derivatives, because these edges are the sole locations where discontinuities of the normal field components actually arise when the second-order abc is implemented nonrigorously. preliminary results of the proposed method applied to a simple metallic spherical scatterer can be found in [10]. in this work we present the implementation details of the nonrigorous symmetric second-order abc applied on large curvilinear hexahedra in higher-order fem and evaluate its performance on a comprehensive set of benchmark targets which include: a metallic sphere, a dielectric cube (as an example of penetrable structure with sharp edges and vertices), and a metallic nasa almond as a standard nontrivial benchmark target of the electromagnetic code consortium (emcc). nonrigorous symmetric second-order abc applied to large-domain finite element modeling ... 677 2. theory and implementation 2.1. higher-order large-domain fem formulation when solving three-dimensional (3-d) linear steady-state em problems by the fem, we first geometrically discretize the domain of interest using lagrange-type generalized curved hexahedra of arbitrary orders, ku, kv, and kw (ku, kv, kw  1). these hexahedra are geometrically flexible and can be used for large-domain modeling of arbitrary shapes [11]. they are analytically described by position vector [11]      u v w wvu k i k j k k k k k j k iijk wlvlulwvu 0 0 0 )()()(),,( rr ,       u u k il l li lk i uu uu ul 0 )( , 1,,1  wvu , (1) where ),,( kjiijk wvurr  are position vectors of interpolation nodes and uk il represent lagrange interpolation polynomials in the u coordinate, of the local parametric u-v-w coordinate system, with lu being the uniformly spaced interpolating nodes defined as uul kklu /)2(  , ukl ,...,1,0 , and similarly for )(vl vk j and )(wl wk k . we then solve the electric field vector wave equation within each of the finite elements [1, 3]. in every hexahedron we expand the electric field vector as 1 1 1 , , , , , , 0 0 0 0 0 0 0 0 0 u v w u v w u v wn n n n n n n n n u ijk u ijk v ijk v ijk w ijk w ijk i j k i j k i j k                    e f f f , (2) where f are curl-conforming (and generally div-nonconforming) hierarchical polynomial vector basis functions defined as r w k jiijkw r vk j iijkv r ukj i ijku wvpup wpvup wpvpu af af af )()( )( )( )()( , , ,    ,             odd ,3, even ,2,1 1,1 0,1 )( iuu iu iu iu up i ii , 1,,1  wvu , (3) nu, nv, and nw are the adopted degrees of the polynomial approximation, which are entirely independent of the element geometrical orders, ku, kv, and kw, and ijku, , ijkv, and ijkw, are unknown field-distribution coefficients (to be determined by the fem). the reciprocal unitary vectors r ua , r va and r wa in (3) are defined as jwv r u /)( aaa  , juw r v /)( aaa  and jvu r w /)( aaa  , where wvuj aaa  )( is the jacobian of the covariant transformation and ua , va and wa are unitary vectors defined as uu  ra , vv  ra and ww  ra . by adopting higher-order polynomial field expansion [nu, nv, and nw in (2) can be up to 10 th order], through the process of p-refinement, fes could be up to 2 long in each direction [11]. applying the standard galerkin-type discretization yields the disconnected system of linear equations for each of the finite elements [1] 2 0([ ] [ ]) { } { }sa k b g   , (4) 678 s. savić, m. ilić where k0 represents the free-space wave number and {} is the column vector of electric field distribution coefficients from (2). disconnected system of linear equations does not take into account boundary conditions which fields must satisfy on the interfaces between two adjacent fes, but considers each finite element (fe) separately. in order to facilitate implementation (and coding), matrices [a] and [b] can be represented using submatrices as in [11] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] uua uva uwa a vua vva vwa wua wva wwa            , [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] uub uvb uwb b vub vvb vwb wub wvb wwb            . (5) the entries in the submatrices [uva] and [uvb] are given as 1 ˆ ˆ r ,ˆ̂ ˆ̂, , rˆ ˆ ,ˆ̂ ˆ̂, , ( ) d , d , v ijkijk ijk u ijk v v ijkijk ijk u ijk v uva v uvb v                      f f f f ,,...,1,0,ˆ ,1,...,1,0 ,,...,1,0ˆ ,,...,1,0 ,1,...,1,0ˆ w v v u u nkk nj nj ni ni      (6) where v stands for the volume of the fe and r and r are relative permittivity and permeability tensors [12, 13], respectively. the electric field expansion orders nu, nv, and nw in (2) are selected in accordance with reduced-gradient criterion [14, 15] and by following the recipes in [16] which facilitate optimal higher-order computation. the remaining entries of matrices [a] and [b] are calculated in a similar manner. analogously, column vector {gs} can be represented as { } { } { } { } s s s s ug g vg wg            , (7) and the entries in the column vector {ugs} are given as                     s kjiukjis sug d 1 rˆˆ̂,ˆˆ̂, nef , ,,...,1,0ˆ ,,...,1,0ˆ ,1,...,1,0ˆ w v u nk nj ni    (8) where s stands for the boundary surface of an element, e is the electric field vector at s (generally not known in advance) and n is the unit normal on s pointing outwards of the element. the remaining entries of the column vector {gs} are calculated in a similar manner. connected system of linear equations [1] is then assembled from (4) and the surface integrals in {gs} [as in (8)] are calculated only at the outer boundary of the fem domain, and not at the boundary of each element [3]. connected system of linear equations takes into account natural boundary conditions, i.e., tangential continuity of electric fields (explicitly) and magnetic fields (implicitly) which must be satisfied at the interfaces nonrigorous symmetric second-order abc applied to large-domain finite element modeling ... 679 between finite elements. consequently, {gs} is calculated only at the outer fem domain boundary, thus it represents a natural connection (interface) between the fem domain and the surrounding space. finally, to obtain a well-defined numerical problem, appropriate em field boundary conditions must be imposed at the outer fem boundary. these boundary conditions can be (i) exact and nonlocal, as in the hybrid finite element method-method of moments (fem-mom) [17], (ii) exact and local, when the fem domain is surrounded by a perfect electric conductor (pec) or a perfect magnetic conductor (pmc), or (iii) approximate and local, e.g., when em field propagation through free space, far from em sources and media discontinuities, is approximated by an abc placed relatively close to the scatterer. the local boundary conditions do not reduce sparsity in the final system of linear equations, which is a highly desirable property [18, 19] and one of the strongest benefits of the fem compared to mom. 2.2. symmetric second-order absorbing boundary condition consider an em scatterer (or generally em field sources) occupying a finite volume, surrounded by free space and illuminated by an incident em field (e inc and h inc ), as shown in fig. 1. in most cases the incident em field is a uniform plane wave, but the theory presented here applies to a general case as well. let sabc be a fictitious spherical surface of radius rabc, centered at the origin and surrounding the scatterer. we truncate the fem computational domain by applying abc at sabc. symmetric (resulting in symmetric system of linear equations) second-order abc, obtained by approximation of the term sc( )r  i e utilizing the wilcox expansion [20], given as [6]  sc sc scabc 0 0 abc scabc 0 abc ( ) j ( ) [ ( )] 2(1 j ) ( ) , 2(1 j ) r r r r r t t r k k r r k r                i e i i e i i e e (9) will be applied at sabc, where incsc eee  represents the scattered electric field, ri is spherical coordinate system radial unit vector, t in subscripts represents the tangential (to sabc) part of a vector or gradient operator and j is the imaginary unit. fig. 1 with the analysis of open em problems using abc. 680 s. savić, m. ilić note that for the connected system of linear equations, the surface integrals in {gs} are calculated (only) at the entire outer fem domain boundary sabc, and that they are zero at two finite elements junction. on the other hand, the basis and testing functions appearing in the integrals are taken locally, from a specific element, as the integration progresses. terms in surface integrals in {gs} [as in (8)] can be rearranged for easier implementation of the second-order abc (9) as abc abc 1 ˆ ˆ ˆrˆ̂ ˆ̂ ˆ̂, , , d [ ( )] drs ijk u ijk u ijk s s ug s s                    f e n i e f , (10) since rin  and 1 r [i]   at sabc, with ]i[ being the identity matrix. applying (10) and imposing the second-order abc (9), the system of linear equations (4) becomes 2 abc 0 0([ ] [ ] j [ ]) { } { } sa k b k s g    . (11) matrix [s] in (11) is the sum of three parts: the part corresponding to the first-order abc, the part corresponding to the second-order abc, which absorbs transverse electric (te) spherical modes, and the part corresponding to the second-order abc, which absorbs transverse magnetic (tm) spherical modes [6, 10]. in the matrix notation this can be written as   te tm1abc 2abc 2abcabc 0 0 abc [ ] [ ] [ ] [ ] , 2 ( j) r s s s s k k r     (12) where the corresponding terms are self explanatory. analogously as in (5), matrix [s] can be represented using submatrices, namely [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] uus uvs uws s vus vvs vws wus wvs wws            , (13) where the entries in the submatrix [uvs], for example, are given [in accordance with (12)] as   te tm1abc 2abc 2abcabc ˆ ˆ ˆ ˆˆ̂ ˆ̂ ˆ̂ ˆ̂, , , , 0 0 abc , 2 ( j)ijk ijk ijk ijk ijk ijk ijk ijk r uvs uvs uvs uvs k k r     (14) and analogously for all other submatrices in (13). the entries corresponding to the firstorder abc, the te part corresponding to the second-order abc, and the tm part corresponding to the second-order abc, respectively, are calculated as   abc te abc tm abc 1abc ˆ ˆ ,ˆ̂ ˆ̂, , 2abc ˆ ˆ ,ˆ̂ ˆ̂, , 2abc ˆ ˆ ,ˆ̂ ˆ̂, , ( ) ( )d , [ ( )][ ( )] d , ( )( ) d , r r v ijkijk ijk u ijk s r r v ijkijk ijk u ijk s t v ijkijk ijk t u ijk s uvs s uvs s uvs s                      i f i f i f i f f f .,...,1,0,ˆ ,1,...,1,0 ,,...,1,0ˆ ,,...,1,0 ,1,...,1,0ˆ w v v u u nkk nj nj ni ni      (15) nonrigorous symmetric second-order abc applied to large-domain finite element modeling ... 681 the column vector abc{ }sg in (11) can be written in the form shown in (7), with the addition of the superscript “abc” to distinguish the column vectors in (4) and (11). hence, similarly as in (12), the column vector abc{ }sg can be represented as the sum of part corresponding to the first-order abc, the te part corresponding to the second-order abc, and the tm part corresponding to the second-order abc, respectively, as te tmabc 1abc 2abc 2abc{ } { } { } { } .s s s sg g g g   (16) the entries in the column vector  abc sug , for example, are given as   abc te abc tm 1abc inc inc ˆ ˆ ˆ0ˆ̂ ˆ̂ ˆ̂, , , 2abc incabc ˆ ˆˆ̂ ˆ̂, , 0 abc 2abc abc ˆ ˆˆ̂ ˆ̂, , 0 abc ( ) ( ) j ( ) ( ) d , [ ( )][ ( )] d , 2(1 j ) ( ) 2(1 j ) r r rs ijk u ijk u ijk s r rs ijk u ijk s s ijk t u ijk ug k s r ug s k r r ug k r                        i f e i f i e i f i e f abc inc( ) d ,t s s      e ,,...,1,0ˆ ,,...,1,0ˆ ,1,...,1,0ˆ w v u nk nj ni    (17) and analogously for the remaining entries in abc{ }sg . 2.3. computation of the surface integrals appearing in the symmetric second-order absorbing boundary condition applied to curvilinear elements consider the surface integrals appearing in (11) when computing entries in [s] and abc{ }sg . the utilized basis and testing functions are curl-conforming and generally divnonconforming, hence the divergences in the tm parts of (15) and (17), and all similar terms, cannot be expressed in the closed form. moreover, as already discussed, these surface integrals are calculated over the entire sabc surface; in other words, they are calculated not only over the finite element surfaces belonging to sabc, but across the junctions (edges between the elements) as well. since the basis and testing functions possess only tangential continuity, this results in appearance of squares of delta-functions ( 2 ) in the kernels of the surface-integral terms at all edges enveloping the surfaces of the finite elements belonging to abcs [9]. in order to rigorously treat the divergence of the basis and testing functions at the edges of elements over sabc, the basis and testing functions must be adopted to enforce the normal continuity of the em field over sabc [8] or additional auxiliary (scalar) variables need to be introduced as in [9]. nevertheless, since the utilized higher-order polynomial basis and testing functions are continuous and differentiable over fes faces, their divergence can be readily calculated numerically. for example, from (3) it follows that the divergence of fu,ijk is given as 1 , 1 ( ) ( ) ( ) ( ) ( ) ( ) 1 ( ) ( ) ( ) ( ) ( ) 1 ( ) ( ) ( ) ( ) . i r r i r r u ijk j k u u j k u u ji r r i r r k u v j k u v i r r i r rk j u w j k u w iu p v p w u p v p w j j u p v u p w u p v p w j v j v p w u p v u p v p w j w j w                         f a a a a a a a a a a a a (18) 682 s. savić, m. ilić partial derivatives in (18) are calculated numerically utilizing the symmetric finite difference. for example, ' d ' d ( ) ( ) ( ) , 2 d r r r r u v u vr r v v v v v v u v j j j v v           a a a a a a (19) where vd is a numerical-differentiation step. since these divergences are computed only at the fem domain-truncation boundary sabc, numerical differentiation represents minimal addition to the complexity of the overall algorithm, and computation time for the surface integrals abc{ }sg is almost negligible compared to the computation time for the fem volume integrals appearing in matrices [a] and [b]. the procedure is similar when divergence is calculated for the functions ijkv,f and ijkw,f . 3. numerical results and discussion 3.1. pec spherical scatterer as the first numerical example, consider a pec spherical scatterer of radius a = 1 m. the scatterer is situated in free space, with permittivity 0 and permeability 0 , and illuminated by a time-harmonic plane-wave of a free space wavelength m10  (f = 299.792 mhz), as shown in fig. error! reference source not found. (a). when constructing numerical model, infinite free space surrounding the scatterer is truncated at the artificial spherical boundary sabc, of radius m5.1b , where the nonrigorous symmetric second-order abc is imposed. the normalized thickness of the free space layer between the scatterer and sabc is 5.0)( 0 ab and it is meshed by only six cushion-like triquadratic curved hexahedral fes. 0 1 2 3 4 5 6 7 8 9 10 10 -3 10 -2 10 -1 10 0 1 st ord. abc 1 st ord. abc with g s 2abc, te and s 2abc, te 1 st ord. abc with g s 2abc, tm and s 2abc, tm nonrigorous 2 nd ord. abc unknowns fem-abc l 2 n o rm ( b ir c s ) / l 2 n o rm (m ie b ir c s ) n 10 1 10 2 10 3 10 4 10 5 10 6 u n k n o w n s (a) (b) fig. 2 (a) large-domain fem-abc model of a pec spherical scatterer. (b) normalized l 2 error norm of the computed bistatic rcs for the pec spherical scatterer and the number of unknowns. nonrigorous symmetric second-order abc applied to large-domain finite element modeling ... 683 first, we will consider far field results. a bistatic radar cross section (rcs) of the scatterer is computed by the proposed fem-abc technique. the order of the polynomial expansion of the electric field for all fes and in all directions is nu = nv = nw = n. numerical integration is performed by means of the 13 th order gauss-legendre quadrature. the bistatic rcs is computed in all directions uniformly (from  0start to  180stop with the resolution of  5 , and from  0start to  360stop with the resolution of  5 ), and its error (with respect to the analytical mie’s series solution) is calculated as a normalized 2l norm 180 360 miebircs 2 mombircs2 0 0 2 miercs 180 360 miebircs 2momrcs mombircs 0 0 (fembircs( , ) ( , )) l norm( bircs) l norm( ) ( , )                        , (20) where fembircs stands for the numerical solution for the bistatic rcs obtained by the proposed fem-abc technique and miebircs stands for the analytical (reference) results in the form of mie’s series. in the following subsection, when analytical miebircs solution is not available, the results obtained by mom, denoted as mombircs, will be used as a reference, as indicated in (20). in fig. error! reference source not found. (b) numerical results are compared for the firstand nonrigorous second-order abc, along with results for the first-order abc with only one term included from the nonrigorous second-order abc [ , teabc2 sg teabc2s and , tmabc2 sg tmabc2s from (12) and (16)]. to validate the convergence of the method with p-refinement, the solutions are obtained for various orders n, ranging from n = 1 to n = 9. from fig. error! reference source not found. (b) it can be concluded that, although not being implemented rigorously and not contributing independently to the accuracy of the solution, the tm part of the symmetric second-order abc together with the te part synergistically contributes to the overall solution accuracy. in addition, due to very rough mesh in this example, the fem solution becomes sufficiently accurate for 97  n with n = 8 yielding the lowest error, which is consistent with the results reported in [16]. moreover, the lowest errors obtained with the proposed large-domain fem with the nonrigorous second-order abc are of the same order of magnitude as those reported in the first example in [9], where the same scatterer was analyzed utilizing the rigorously implemented second-order abc. in this example the nonrigorous second-order abc performs significantly better in far field compared to the first-order abc, and for n = 8 the solution error is 2.7 times lower compared to results obtained utilizing the first-order abc. note that this error difference is even greater (8.8 times in favor of the nonrigorous secondorder abc) when the abc is set closer to the scatterer, i.e., when 1.0)( 0 ab , as reported in [10]. noting that far fields, and related derived parameters, are less sensitive to computational errors than near fields, in order to obtain and demonstrate an even more rigorous and complete validation of the proposed fem-abc technique, we next analyze the accuracy of the computed near field of the presented pce spherical scatterer. using the mesh from fig. error! reference source not found. (a) and setting n = 8 (for all elements in all direction) we compute the near electric field numerically and analytically 684 s. savić, m. ilić and show the comparison of obtained results in fig. 3. shown in fig. 3 is the magnitude of the x-component of the total electric field, in the 0x plane, obtained (a) analytically (mie’s series solution) and numerically using (b) the first-order abc and (c) the proposed second-order abc. the incident electric field is ]m/v[1inc xie  ( xi being the cartesian unit vector in the x-direction) traveling in the z-direction, as shown in fig. 3 (d). in figs. 3 (e) and (f) the error of the electric field computed by the fem (relative to the reference mie’s series solution) for the first-order and second-order abc models are plotted, respectively. the error is calculated as 2im mie, im fem, 2re mie, re fem, )()( xxxxx eeeee  , where ex,fem and mie,xe ex,mie are x-components of the electric fields obtained numerically and analytically, respectively, and re and im stand for the real and imaginary part of the complex quantities, respectively. (a) (b) (c) (d) (e) (f) fig. 3 near field results for the pec spherical scatterer from fig. error! reference source not found. obtained (a) analytically and numerically using (b) the first-order and (d) the proposed second-order abc. (d) large-domain fem-abc model of a pec spherical scatterer with illustrated incident field. electric field error (relative to the reference mie’s series solution) for (e) the first-order and (f) the proposed secondorder abc. from fig. 3, it can be concluded that the proposed second-order abc significantly outperforms the first-order abc. the results obtained using nonrigorous second-order abc are more accurate than those using the first-order abc in the complete x = 0 plane, and especially for z > 0. note that, due to symmetry, the remaining two cartesian components of the electric field vanish in the 0x plane (ey = 0, ez = 0), hence they are not shown. also, note that other field components in different planes exhibit similar nonrigorous symmetric second-order abc applied to large-domain finite element modeling ... 685 errors, hence they are not shown here for brevity. in addition, the errors in the near field can be further reduced employing p-refinement. 3.2. dielectric cubical scatterer as the second numerical example, consider a dielectric cubical scatterer with relative permittivity 25.2r  and relative permeability 1r  , of edge length m2a . the scatterer is situated in free space and illuminated by a time-harmonic plane-wave of a free space wavelength m20  (f =149.896 mhz), as shown in fig. 4 (a). when constructing the numerical model, infinite free space surrounding the scatterer is truncated at the artificial spherical boundary sabc, of radius m2b , where the nonrigorous symmetric second-order abc is imposed. free space between the scatterer and the abcs is again meshed by only six cushion-like triquadratic curved hexahedral fes and the dielectric scatterer is meshed by only one trilinear fe. minimal normalized distance between the scatterer and abcs is 13.0)35.0( 0  ab and this maximal distance is (b  0.5a)/0 = 0.5. 0 1 2 3 4 5 6 7 8 9 10 10 -3 10 -2 10 -1 10 0 1 st ord. abc 1 st ord. abc with g s 2abc, te and s 2abc, te 1 st ord. abc with g s 2abc, tm and s 2abc, tm nonrigorous 2 nd ord. abc unknowns fem-abcl 2 n o rm ( b ir c s ) / l 2 n o rm (m o m b ir c s ) n 10 1 10 2 10 3 10 4 10 5 10 6 u n k n o w n s (a) (b) fig. 4 (a) large-domain fem-abc model of a dielectric cubical scatterer. (b) normalized l 2 error norm of the computed bistatic rcs for the dielectric cubical scatterer and the number of unknowns. normalized l 2 error norm of the computed bistatic rcs for the cubical scatterer is calculated as discussed in subsection 0 and shown in fig. 4 (b). the error is calculated with respect to the fully converged mom solutions obtained by wipl-d software [21]. numerical parameters regarding the field expansion and integration in the fem model are kept the same as in the previous example. it can be concluded based on fig. 4 (b) that the nonrigorously implemented tm part of the second-order abc independently contributes to the quality of solutions and that, together with te part of the second-order abc, both parts synergistically contribute to the overall solution accuracy. in this example, the nonrigorous second-order abc performs significantly better compared to the first-order 686 s. savić, m. ilić abc, and for 7n the error obtained using the second-order abc is 5.6 times smaller than that for the first-order abc. 3.3. pec nasa almond scatterer as the last example, consider a pec nasa almond scatterer, which is one of the standard benchmarks of the emcc. the nasa almond is geometrically described by the parametric equations given above fig. 2 in [22]. the almond of length mm37.252d (parameter d from equations in [22]), situated in free space, and illuminated by horizontally and vertically (in  90 plane) polarized incident em field at the operating frequency ghz19.1f ( mm2520  ) will be considered, as shown in fig. 5. fig. 5 pec nasa almond scatterer. higher-order fem-abc model of the pec nasa almond scatterer consists of 96 triquadratic large-domain lagrange-type fes. these fes model the free space between the almond and the spherical surface abcs , where nonrigorous symmetric second-order abc is applied. the radius of abcs is mm220b . minimum and maximum distances from the almond to abcs are 0373.0  and 0801.0  , respectively, and the field expansion orders are set to 6n (for all finite elements and in all directions), which results in 62220 unknown field distribution coefficients. using the proposed nonrigorous second-order abc coupled with the 0 30 60 90 120 150 180 -50 -45 -40 -35 -30 -25 -20 -15 -10 wipl-d feko ----------------------------------higher order fem-abc n u =n v =n w =6, 62220 unkn. nonrigorous 2 nd ord. abc = 90 0 m o n o st at ic r c s [ d b m 2 ]  0 30 60 90 120 150 180 -50 -45 -40 -35 -30 -25 -20 -15 -10 wipl-d feko ----------------------------------higher order fem-abc n u =n v =n w =6, 62220 unkn. nonrigorous 2 nd ord. abc m o n o st at ic r c s [ d b m 2 ]  = 90 0 (a) (b) fig. 6 computed monostatic rcs of the pec nasa almond from fig. 5 for the (a) horizontal and (b) vertical incident field polarization; comparison of proposed fem-abc and two mom results obtained by wipl-d [21] and feko [23] software. nonrigorous symmetric second-order abc applied to large-domain finite element modeling ... 687 large-domain higher-order fem technique, the monostatic rcs in the horizontal plane (  90 , )1800  is computed. the results are compared with results obtained by mom technique [21, 23] for both horizontal and vertical incident field polarizations, and shown in fig. 6. from fig. 6 it can be concluded that a very good matching between the fem-abc and mom results is achieved in all directions, and that scatterers of relatively complex shapes can also be accurately analyzed by the proposed fem-abc method. 4. conclusions we have presented, implemented, and validated by representative numerical experiments, a nonrigorous symmetric second-order abc in combination with largedomain higher-order fem technique for frequency domain em scattering analysis. in the proposed method, the abc is implemented nonrigorously, without imposing the normal field continuity and without introducing additional variables. the required divergence of the nonconformal field components is computed numerically on the faces of elements belonging to the abs, using simple finite differences. numerical experiments have shown that the nonrigorous second-order abc performs significantly better compared to the first-order abc and that the proposed method results mach very good with referent numerical solution of high accuracy. moreover, the examples have shown that the errors in computation of the rcs can be significantly lower if the divergence term is included in the abc, as described, than if it is omitted. this conclusion is in contrast with results reported thus far in the literature, where examples with small-domain fem meshes have been utilized exclusively. finally, examples with a dielectric cubical scatterer and the nasa almond have shown that the proposed method can be successfully applied in analysis of scatterers with sharp edges and tips. acknowledgement: this work was supported by the serbian ministry of science and technological development under grant tr-32005. references [1] p. p. silvester and r. l. ferrari, finite elements for electrical engineers, 3 ed. new york: cambridge university press, 1996. [2] j. l. volakis, a. chatterjee, and l. c. kempel, finite element method for electromagnetics (antennas, microwave circuits, and scattering applications), 1 ed. new york: ieee press, 1998. [3] j.-m. jin, the finite element method in electromagnetics. hoboken, new jersey: john wiley & sons, 2014. [4] j.-m. jin and d. j. riley, finite element analysis of antennas and arrays, 1 ed. hoboken, new jersey: wiley-ieee press, 2009. [5] j. p. webb and v. n. kanellopoulos, "absorbing boundary conditions for the finite element solution of the vector wave equation," microwave and optical technology letters, vol. 2, no. 10, pp. 370-372, october 1989. [6] a. f. peterson, "accuracy of 3-d radiation boundary conditions for use with the vector helmholtz equation," ieee transactions on antennas and propagation, vol. 40, no. 3, pp. 351-355, march 1992. [7] v. n. kanellopoulos and j. p. webb, "3d finite element analysis of a metallic sphere scatterer: comparison of first and second order vector absorbing boundary conditions," journal de physique iii, vol. 3, no. 3, pp. 563-572, march 1993. 688 s. savić, m. ilić [8] v. n. kanellopoulos and j. p. webb, "the importance of the surface divergence term in the finite element-vector absorbing boundary condition method," ieee transactions on microwave theory and techniques, vol. 43, no. 9, pp. 2168-2170, september 1995. [9] m. m. botha and d. b. davidson, "rigorous, auxiliary variable-based implementation of a secondorder abc for the vector fem," ieee transactions on antennas and propagation, vol. 54, no. 11, pp. 3499-3504, november 2006. [10] s. v. savić, b. m. notaroš, and m. m. ilić, "accuracy analysis of the nonrigorous second-order absorbing boundary condition applied to large curved finite elements," in 2015 international conference on electromagnetics in advanced applications (iceaa), turin, italy, 2015, pp. 58-61. [11] m. m. ilić and b. m. notaroš, "higher order hierarchical curved hexahedral vector finite elements for electromagnetic modeling," ieee transactions on microwave theory and techniques, vol. 51, no. 3, pp. 1026-1033, march 2003. [12] s. v. savić, a. b. manić, m. m. ilić, and b. m. notaroš, "efficient higher order full-wave numerical analysis of 3-d cloaking structures," plasmonics, vol. 8, no. 2, pp. 455-463, june 1 2013. [13] s. v. savić, b. m. notaroš, and m. m. ilić, "conformal cubical 3d transformation-based metamaterial invisibility cloak," journal of the optical society of america a, vol. 30, no. 1, pp. 7-12, january 2013. [14] j. c. nedelec, "mixed finite elements in r3," numerische mathematik, vol. 35, no. 3, pp. 315-341, september 1980. [15] j. c. nedelec, "a new family of mixed finite elements in r3," numerische mathematik, vol. 50, no. 1, pp. 57-81, january 1986. [16] e. m. klopf, n. j. šekeljić, m. m. ilić, and b. m. notaroš, "optimal modeling parameters for higher order mom-sie and fem-mom electromagnetic simulations," ieee transactions on antennas and propagation, vol. 60, no. 6, pp. 2790-2801, june 2012. [17] m. m. ilić, m. djordjević, a. ţ. ilić, and b. m. notaroš, "higher order hybrid fem-mom technique for analysis of antennas and scatterers," ieee transactions on antennas and propagation, vol. 57, no. 5, pp. 1452-1460, may 2009. [18] g. strang, linear algebra and its applications, 4 ed.: brooks cole, 2005. [19] g. strang, introduction to linear algebra, 4 ed. wellesley, ma: wellesley cambridge press, 2009. [20] c. h. wilcox, "an expansion theorem for electromagnetic fields," communications on pure and applied mathematics, vol. 9, no. 2, pp. 115-134, may 1956. [21] "wipl-d pro," 11.0 wipl-d d.o.o., 2013 available: http://www.wipld.com. [22] a. c. woo, h. t. g. wang, m. j. schuh, and m. l. sanders, "benchmark radar targets for the validation of computational electromagnetics programs," ieee antennas and propagation magazine, vol. 35, no. 1, pp. 84-89, february 1993. [23] "feko," altair development s.a. (pty) ltd,, 2011 available: http://feko.info/applications/rcs. http://www.wipld.com/ http://feko.info/applications/rcs instruction facta universitatis series: electronics and energetics vol. 33, no 3, september 2020, pp. 429-444 https://doi.org/10.2298/fuee2003429t © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd technique of control pmsm powered by pv panel using predictive controller of dtc-svm fadila tahiri, abdelkader harrouz, djamel belatrache, fatiha bekraoui, ouledali omar, ibrahim boussaid department of hydrocarbon and renewable energy, laboratory lddi, university of ahmed draya, adrar, algeria abstract. the present paper is a part of the study of direct torque control based (dtc) on space vector modulation using predictive controller (predictive svm) of a permanent magnet synchronous motor (pmsm) powered by a photovoltaic (pv) source. in the conventional direct torque control (dtc) of a permanent magnet synchronous motor (pmsm), hysteresis controllers are used to choose the proper voltage vector resulting in large torque ripples. the direct torque control can accelerate the torque responses but increases the torque ripple at same time. nowadays, exist some other alternative approaches to reduce the torque ripples based on (predictive svm) technique. this method is based on the replacement of hysteresis comparators (used in conventional dtc) by proportional integral (pi) regulators and the selection table by space vector modulation (svm). the simulation results confirm that this proposed method where the control of the switching frequency is well controlled, allows us to reduce the oscillations of the electromagnetic torque and flux by 20 % and 30%, respectively with a good dynamic response compared with conventional dtc. key words: photovoltaic, pmsm, dtc, dtc-svm, predictive controller. nomenclature i0 reverse saturation current of the diode (a) i0r reverse saturation current k constant of boltzmann (1.38.10-23j / k) q charge of the electron (1.6.10-19c) a p-n junction ideality factor eg band gap g, gr real and reference solar radiation icc short-circuit current sv , sv si , si s , s current, voltage and magnetic flux of stator (α,β)axes received december 31, 2019; received in revised form may 17, 2020 corresponding author: abdelkader harrouz department of renewable energy and hydrocarbon, faculty of technology and sciences, ahmed draïa university adrar, algeria e-mail: harrouz.onml@gmail.com 430 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid  the speed of rotation of the machine (rotor)(rad/s) f permanent magnet flux linkage (web) rs the stator resistance (ω) ls the inductance of the stator(h) j moment of inertia f coefficient of friction p number of pairs of poles cbav ,, , cbai ,, three-phase voltage and current 1. introduction the demand for electrical energy increases daily to cover human needs; the use of renewable energy is becoming the key solution to this serious energy crisis and environmental pollution [1]. algeria has great potential from solar energy, because it has a vast desert area and very high solar radiation [2-3]. for this reason, the optimal solution to energy production in our study is solar energy [4]. in the field of variable speed, the permanent magnet synchronous machine are extensively accepted due to their high efficiency, high power density, high precision, low maintenance costs, simple structure, and its high torque density [5-6]. among the most used applications for the permanent magnet synchronous motor (pmsm) are drones, portable robots, and vacuum pumps for decades of diversity and performance. especially in electric and hybrid cars [7]. vector controlled pmsm drive provides better dynamic response and lesser torque ripples, and necessitates only a constant switching frequency [8]. pmsm modeling has been tackled in the literature in various ways, commonly using a transition of the electrical component from the physical 3-phase structure to an equivalent 2-phase right-angled structure, enabled by the clark transformation [9]. due to the presence of external disturbances and parameter variation in pmsm over the past decades, performance has been improved by developing various powerful control technologies. [10] however, the widely used approach consists in using linear control theory with the disturbance estimate [11]. it is therefore interesting to find a way to make their independent control to improve their performance. the most suitable solution now is direct torque control (dtc). this method has been first proposed for induction machines [7-12]. it is used in variable frequency drives where the stator flux and machine electromagnetic torque are directly used to generate the control pulses for voltagesource inverter through a predefined switching table [13], dtc owns the advantages of simplicity, quick dynamic response and robustness, which makes it a powerful motor control method in various applications [14]. however, it is known that dtc is troubled by the disadvantages of large torque/flux ripples and unstable switching frequency [15], which hinders its practiitcal applications. in order to tackle the problems associated with conventional dtc, lots of modified dtc methods are proposed to improve the control performance [16]. abdelkarim ammar et al [17], are present the space vector modulation (svm) based direct torque control strategy (dtc) for induction motor (im) in order to overcome the drawbacks of the classical dtc. moreover, they proposed model based loss minimization strategy for efficiency optimization, the proposed svm-dtc algorithm was investigated by using matlab/ simulink with real time interface based on dspace 1104 signal card. the simulation and experimental validation gives similar results, they showed direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 431 that lmc reduces losses, improved efficiency at zero and low loads operation. therefore, dtc-svm it’s a good solution in general to overcome the drawbacks of classical dtc. a comprehensive review has been provided by r h kumar et al [18] of recent advancements of dtc of induction motor (im) for the past one decade. strategies adopted to improve the performance of dtc based on switching table, constant switching frequency operation, intelligent control, sensor less control and predictive control are extensively discussed with its key results and algorithms. the simulation results of dtc predictive show a reduction in torque and stator flux ripples by 14.94 and 23%, respectively, compared with conventional dtc drive. in this paper, we use the control predictive dtc-svm applied to permanent magnet synchronous motor, to obtain a constant switching frequency after it was variable in conventional dtc (because of the use of hysteresis comparators) and minimize the ripple of torque and flux. this method of control (predictive dtc-svm) is based on the replacement of hysteresis comparators (used in conventional dtc) [17] by proportional integral (pi) regulators and the selection table by space vector modulation (svm).[21] 2. modeling system 2.1. photovoltaic system the solar cells are generally connected in series and in parallel, in parallel with nph cells to increase the current and in series with nsh cells to increase the voltage then increase the pv power. a pv generator is made up of interconnected modules to form a unit producing high continuous power compatible with conventional electrical equipment [19]. the used model is shown in figure.1, which consists of four components: a current generator iph, a diode, a parallel resistance rsh and a serial resistance rse [20]. fig. 1 equivalent diagram of a photovoltaic cell. the output current is given by the following equation [22]: sh sh s sepv sh s pv s sepv sh s pv 0shphshpv r n n r i n n v 1 aktn r i n n vq exp in-in=i                                         (1) 432 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid where, the cell reverse saturation current is related to the temperature (t) as follows                     t 1 298 1 ka qe exp t t i=i g 3 r 0r0 (2) similarly, the photocurrent iph depends on the solar radiation (g) and the cell temperature (t) [21]: ) g g (i=i r ccph (3) 2.2. model of pmsm accounting for the hypothesis commonly considered in ac machine modelling, the electrical equations of the pmsm in a (α, β) reference frame, are                        dt d tfipip dt d j dt di lirv dt di lirv rsfsf f s ssss f s ssss .cos...sin.. cos.. sin... (4) the electromagnetic torque te is given from [23, 38]: e s 3 t p( ) 2 s s si i      (5) 2.2.1. simulation and interpretation in the first step, we use a simulation of the (pmsm) operation in the reference frame (α, β) powered directly by 50v, 50hz network. the software used in this simulation is matlab / simulink. we see in (figure 2.a) that the space of speed reaches the steady state very quickly with an acceptable response time. after applying the load at the moment (0.3s 0.4s) we found that the speed decreases and then returns to its reference value. the torque peaks at the first start moment, then reaches his value when the speed decreases (under load) and is proportional to the current. (figure 2.d) shows the temporal evolution of the stator flux, which has a disturbed sinusoidal shape. direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 433 fig. 2 the variation with time: (a) speed variation, (b) torque variation, (c) current variation, (d) flux variation. 3. direct torque control of pmsm the block scheme of the investigated direct torque control (dtc) for a voltage source inverter fed pmsm is presented in figure.3 fig. 3 general structure of the dtc. 434 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid the direct torque control of a permanent magnet synchronous machine is based on direct determination of the control sequence to be applied to a voltage inverter [24]. the switching states is selected from the two comparator output (error) of both torque and flux, where the estimated values of torque and flux are compared with the reference values and depending upon the hysteresis comparator error, the result may increase or decreases [25]. the estimation of reference torque, flux and position of flux vector is done by using machine input voltages and currents as shown in figure.3 [26] the stator electric equations of the pmsm, in a (α, β) reference frame are given by [27]: s s 3 i . 2 1 ( ) 2 i . sa s sb sc s s i i i i i j i                 (6) the stator voltage: s s 3 1 3 1 v . ( ) . ( ) 2 2 2 2 1 1 ( ) ( ) 2 2 v . a b c dc a b c s b c dc b c s s v v v u s s s v v v u s s v jv                                   (7) two-level inverter is capable of producing six non-zero voltage vectors and two zero vectors. figure.4. shows the complex plane of the eight voltage vectors [28] fig. 4 different vectors of stator voltages provided by a two levels inverter. direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 435 table 1 shows the switching states to select a suitable v for selecting the switches in the inverter. this voltage sector is generated from the two-comparator output (error) of both torque and flux [25]. the switching table receives 6 active and 2 zero vector from the comparator output and generates 8 possible switching vector for the inverter [27, 29]. dtc select the active voltage switching vector states for doubling the sampling period and select an appropriate v[30]. table 1 switching table for dtc 6sector[29]. the conventional dtc control is more robust compared against the conventional methods (field-oriented control for example). it does not require a mechanical measurement such as that the speed or position of the machine, moreover the sensitivity to the parameters of the machine is clearly attenuated in the case of dtc, since the flux is made according to a single parameter namely the stator resistance. in addition, svm (space vector modulation) is replaced in this command by a simple switching table that makes it easier [31]. 4. predictive dtc-svm the strategy of the control dtc-svm with a predictive controller uses a svm with a fixed and constant switching frequency [28]. this control strategy ensures the decoupling between the stator flux vectors amplitude and its arguments. indeed, the stator flux amplitude will be imposed. nevertheless, the argument is calculated to obtain high performance like the reduction of the stator flux and the electromagnetic torque ripples. the difference between the conventional dtc and this control strategy is that the latter is based on the pi controllers and the svm in order to fix the switching frequency, which consequently reduces the stator flux and the torque ripples as well as the harmonic waves of the stator current. the switching table and the hysteresis regulators used in the conventional dtc are eliminated. the voltage vector was calculated by using a predictive controller. [29] the block diagram of the predictive (dtc-svm) control of a pmsm powered by a voltage inverter from a pv source is shown in figure 5, the pi predictive controller is shown in figure 6. [32] sector s1 s2 s3 s4 s5 s6 v2 v3 v4 v5 v6 v6 v7 v0 v7 v0 v7 v0 v6 v1 v2 v3 v4 v5 v3 v4 v5 v6 v1 v2 v0 v7 v0 v7 v0 v7 v5 v6 v1 v2 v3 v4 436 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid fig. 5 pmsm system control based on predictive dtc-svm. fig. 6 pi predictive controller. 4.1. predictive controller the relationship between the torque pulses: [33]      kk t t sref s s eref e (8) where teref the reference is torque, s and ∆φ are respectively the deviations from s and φ which are defined by: ssrefs  ssref  (9) where ks and kφ are the constants derived from the pmsm specifications. the torque ripple is actually caused by∆∅s, ∆φ and the influence of ∆∅s is considerably lower than ∆φ. as a result, the torque ripple can be attenuated if ∆φ is kept close to zero. for dtc-svm control, the generation of the control pulses (sa, sb, sc) applied to the inverter switches is generally based on the use of a predictive controller, which receives information about the error of the controller. ∆te= (te-ref -te) the reference stator flux amplitude ∅ref, the amplitude and the position of the estimated stator flux vector and the current value to be measured [34]. the predictive controller determines the control reference stator voltage direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 437 vector in the polar coordinates vs= [vsref ∆φ]. the equation shows that the relationship between the torque error and the increment of the angle ∆φ is linear. therefore a proportional integral (pi) predictive controller which generates the load angle changing to minimize the instantaneous error between the reference torque and the actual torque, is applied. from the structure of the predictive torque and stator flux controller shown in figure.6. we noted that the torque error ∆te and the stator reference flux are delivered to the predictive controller, which gives the deviation of the stator flux angle ∆φ [32]. from figure 6; α, β axes components of the stator reference voltage vsref, are calculated as:                    ss e srefsref refs ss e srefsref refs ir t v ir t v sinsin coscos (10) 4.2. space vector modulation (svm) the svm method generates the switching signals based on the instantaneous position of the rotating reference vector in the voltage vector space of the converter [14, 37] as shown in the figure.3. in the space vector diagram svd of a two-level inverter [35], every sector (represented as si, i = 1 to 6) is an equilateral symmetrical triangle of height h (=√3/2). the edge vectors (v1 to v6) are named active vectors and (v0, v7) zero vectors. the three closest switching vectors (one zero vector and two active vectors), allows us to calculate the svm switching time in any sector. the movement of the reference vector v * positioning inside the sector synthesizing the switching times. figure 7 allows us to understand the two-level switching of svd. the determination of the volts-second of v * and their time integral is shown in equation 11. [36] fig. 7 sector-1 for two-level svd the reference voltage v*volts-sec is calculated by the following equation; v t+v t+v t=tv 002211s * (11) 438 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid where t0, t1 and t2 are the work times of basic space voltage vector v0, v1 and v2 respectively. v0 state can be either [000] or [111] switching state, or else both. equation (12) can be used to determine the position of the angle v * (θ) in the sector; v v arctg            s s (12) the θ values sample the v* in different sector (example, θ =115°, the v* approach sector-2, since sector-2 lies in an angle between 61°-120°). according to the v* position, whether inside or outside the hexagonal svd (figure.7), svd is divided into linear modulation and over modulation equal ma ≤0.907and ma > 0.907, respectively. ts = t1 + t2 + t0. we calculated t1 and t2 from projecting v* position along α-axis and β-axis with respect to svd origin (zero point). henceforth, the volts-sec equations for αaxis and β-axis are vsα0 and vsβ0, ts= t1 + 0.5t2 and ts = ht2, respectively. thus, t2 = ts vsβ0/h and t1 = ts (vsα0 − vsβ0)/2h. the active vector times t1 and t2, help to find the zero voltage time ts, from the given switching frequency. [37] 5. simulation and interpretation both the simulations (simulation result of dtc conventional and predictive dtcsvm) were proceeded at the same conditions regarding motor parameters, switching frequency of inverter transistors and nominal condition (irradiation, temperature) of pv source. for constant flux operating condition, the flux amplitude produced by permanent magnet is the value of reference amplitude of stator flux. the system consists of photovoltaic sources, inverter, and permanent magnet synchronous motor. table 2 machine and control parameters rated motor power pn 1.1 kw nominal motor voltage vn 220v power factor cos φ 0.38 nominal frequency f 50hz stator resistance rs 0.6 ohm direct stator induction ald 2.8mh quadratic stator induction lq 1.4mh flux of magnets 0.12web number of pole pairs p 4 moment of inertia j 1.1*10-3 n.m.s2 coefficient of friction f 1.4*10-3 nominal torque te 10 n.m 5.1. simulation results of conventional dtc in fig.8.b, the electromagnetic torque is illustrated, that begins with a value of approximately 5nm then its follows the reference torque to return the machine to the previously speed defined by the set point with a reversal of direction of rotation (t = 0.2 to 0.25), finally returns to zero until we apply a load of 5n.m at t= 0.3. we observe in direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 439 fig. 9.a. the stator current temporal evolution, which has an almost sinusoidal shape when we apply a load with an oscillation equal 4 a. the stator flux module follows its reference without exceeding. it shows no sensitivity to the load application. we noted that the electromagnetic torque is full of ripples caused by the used of hysteresis controllers for the stator flux and the electromagnetic torque ,which introduce limitations such as a variable switching frequency, high flux ripples and current distortion. fig. 8 (a) –the variation of speed responses, (b) –the variation of stator torque responses fig. 9 (a) –the variation of current responses, (b) –the variation of flux responses fig. 10 (a) –the variation of stator flux (α, β) axes responses, (b) –the variation of stator flux (alpha) as a function of stator flux (beta). 440 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid 5.2. simulation results of predictive dtc-svm fig. 11 the block diagram of the simulation of pmsm system control based on predictive dtc-svm in the same operating condition (we apply a load of 5n.m at t = 0.3 and reverse direction of rotation at t = 0.2-0.25). in fig.12.a, we note that the rotation speed makes a small overshoot at startup and then stabilizes at the rated speed 140 rad/s during a response time equal to 0.02 s. this overrun is justified by regulator values that have not been satisfactory and require adjustments. the electromagnetic torque, which is illustrated in fig.12.b, perfectly follows its reference with an oscillation of 0.5n.m. on the curve of fig.13.a, we see the stator current evolution which has a near sinusoidal shape with few fluctuations compared with the current of the dtc control. concerning the fig.13.b, we noticed that the modulus of the estimated stator flux revolves around its reference in a band of very narrow width that of the dtc. the presentation of the flow in the complex plane fig.14.b shows that the stator flow starts from the point (0, 0) and then turns in the trigonometric direction to follow a circle of radius fixed by the instruction. generally, we notice a decrease in torque and flux oscillations due to predictive dtcsvm control. switching frequency in predictive dtc-svm is constant due to the excluded of the switching table and hysteresis regulators used in the conventional dtc and its replacement with pi controllers and svm, which reduces the torque and flux oscillations as well as harmonic waves of constant current. direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 441 fig. 11 (a) – the variation of speed responses, (b) –the variation of stator torque responses fig. 12 (a) –the variation of current responses, (b) –the variation of flux responses fig. 13 (a) –the variation of stator flux (α, β) axes responses, (b) –the variation of stator flux (alpha) as a function of stator flux (beta). 442 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid the following table shows the difference between the conventional dtc and predictive dtc-svm: table 3 various oscillations between the conventional dtc and predictive dtc-svm oscillation torque (nm) flux (wb) current (a) dtc 2.5 0.01 4 dtc-svm predictive 0.5 0.003 1.75 6. conclusion the work presented in this paper focuses on the study of direct torque control (dtc) based on space vector modulation using predictive controller (predictive svm) of a permanent magnet synchronous motor (pmsm); indeed, this strategy is based on the direct determination of control sequence applied to the inverter. this control is less sensitive to the variation of the machine parameters and does not require mechanical sensors that are fragile. it has been concluded that the predictive svm dtc control is to minimize ripple at the torque and flux, with a high switching frequency. from the results of the simulation can be summarized as follows:  the oscillation of torque and flux is important in the conventional dtc because of the use of hysteresis regulators, which introduce limitations such as a high and uncontrollable switching frequency  in dtc-svm, we replace the hysteresis regulators and switching table with pi controller and svm, the reducing of the oscillations in the torque and the flux produced by:  inverter switching frequency is constant, which consequently reduces the flux stator and torque ripples as well as the harmonic waves of the stator current.  distortion caused by sector changes are eliminated.  zero low sampling frequency is required.  dynamic performance of dtc-svm are comparable with selection table based dtc. in the end, the torque, flux and current was recorded 0.5, 0.003 and 1.75, respectively in dtc-svm predictive and 2.5, 0.01 and 4 respectively in conventional dtc. the obtained results confirm that, the proposed control more applicable and compatible with our pmsm compared against the convectional dtc. acknowledgement: this paper and the research behind it would not have been possible without the exceptional support of the general directorate for scientific research and technological development, algeria. direct torque control (dtc) svm predictive of a pmsm powered by photovoltaic source 443 references [1] o. ellabban, h. abu-rub, f. blaabjerg, “renewable energy resources: current status, future prospects and their enabling technology”, renewable and sustainable energy reviews, vol. 39, pp. 748–764, 2014. [2] a. harrouz, a. temmam, m. abbes, “renewable energy in algeria and energy management systems”, international journal of smart grid, vol. 2, no. 1, 2018. [3] a harrouz, h omar. application of solar energies to reinforce the flow water of foggara in the adrar region. international journal of smart grids, ijsmartgrid, 2(4), 203–208. (2018). [4] a. harrouz, m. abbes, i. colak, k. kayisli, “smart grid and renewable energy in algeria”, in proceedings ogf the ieee xplore of conference (icrera), 2017, san diego, ca, usa. [5] y. kim, h. t. seo, s. k. kim , k. s. kim, “a robust current controller for uncertain permanent magnet synchronous motors with a performance recovery property for electric power steering applications”, energies, vol. 11, no. 5, p. 1224, 2810. [6] abd essalam badoud, “mppt controller for pv array under partially shaded condition”, algerian journal of renewable energy and sustainable development, vol. 01, no. 01, pp. 99–111, june 2019, [7] y. h. kim, k. choi, s. k. kim, k. s. kim, “a disturbance observer based approach to current control of pmsm drives for torque ripple reduction”, ifac-papers online, vol. 52, no. 4, pp. 206–209, 2009. [8] a. v. sant and k. r. rajagopal, “pm synchronous motor speed control using hybrid fuzzy-pi with novel switching functions”, ieee transactions on magnetics, vol. 45, no. 10, october 2009. [9] a. ul haq, d. đurđanović, “precedent-free fault localization and diagnosis for high speed train drive systems”, facta universitatis, series mechanical engineering, vol. 13, no. 2, pp. 67–79, 2015. [10] m. manohar, s das, “current sensor fault-tolerant control for direct torque control of induction motor drive using flux-linkage observer”, ieee transactions on industrial informatics, vol. 13, no. 6, pp. 2824–2833, 2017. [11] h. mesloub, r. boumaaraf, m. t. benchouia, a. golea, n. goléa, k. srairi, “comparative study of conventional dtc and dtc svm based control of pmsm motor simulation and experimental results”, in proceedings of the international association for mathematics and computers in simulation (imacs), 2018, vol. 18, pp. 30148-4. [12] m. lukac, m. kameyama, m. perkowski, p. kerntopf, “using homing, synchronizing and distinguishing input sequences for the analysis of reversible finite state machines”, facta universitatis, series electronics and energetics, vol. 32, no. 3, pp. 417–438, 2019. [13] m. amiri, j. milimonfared, d. a. khaburi, “predictive torque control implementation for induction motors based on discrete space vector modulation”, ieee transactions on industrial electronics, vol. 65, no. 9, pp. 6881–6889, 2018. [14] f. niu, x. huang , l. ge, j. zhang, l. wu, y. wang, k. li , y. fang, “a simple and practical duty cycle modulated direct torque control for permanent magnet synchronous motors”, ieee transactions on power electronics, vol. 34, no. 2, pp. 0885-8993, 2019. [15] dj. rabah, b. sid ahmed, a. samar, “accurate computation of magnetic induction generated by hv overhead power lines”, facta universitatis, series electronics and energetics, vol. 32, no. 2, pp. 267– 285, 2019. [16] a. ammar, a. benakcha, a. bourek, “closed loop torque svm-dtc based on robust super twisting speed controller for induction motor drive with efficiency optimization”, international journal of hydrogen energy, vol. 42, no. 28, pp. 17940–17952, 2017. [17] m. petronijevic, n. mitrovic, v. kostic, and b. jovanovic, “assessment of unsymmetrical voltage sag effectson ac adjustable speed drives”, facta universitatis, series: electronics and energetics, vol. 22, no. 1, pp. 341–360, december 2009. [18] a o. conde, j. francisco. g. sánchez, j. muci, a. s.gonzález, “a review of diode and solar cell equivalent circuit model lumped parameter extraction procedures”, facta universitatis series: electronics and energetics, vol. 27, no. 1, pp. 57–102, march 2014. [19] h. bouzeriaa, c. fethah, t. bahib, i. abadliab, z. layateb, s. lekhchinec, “fuzzy logic space vector direct torque control of pmsm for photovoltaic water pumping system”, energy procedia, vol. 74, pp. 760 – 771, 2015. [20] s. laribi, k. mammar, f. zohra arama, t. ghaitaoui, “analyze of impedance for water management in proton exchange membrane fue fells using neural networks methodology”, algerian journal of renewable energy and sustainable development, vol. 01, no. 01, pp. 96–105, june 2019, http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/4355 http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/4355 http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/4526 http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/4526 444 f. tahiri, a. harrouz, d. belatrache, f. bekraoui, o. omar, i. boussaid [21] j. francisco, s. garcía, r. beatriz, “modelling solar cell s-shaped i-v characteristics with dc lumpedparameter equivalent circuits a review”, facta universitatis series: electronics and energetics, vol. 30, no. 3, pp. 327–350, september 2017. [22] f. zohra arama, s. laribi, t. ghaitaoui, “a control method using artificial intelligence in wind energy conversion system”, algerian journal of renewable energy and sustainable development, vol. 01, no. 01, pp. 86–95, june 2019. [23] a. janjic, s. savic, g. janackovic, m. stankovic, l. zoran velimirovic, “multi-criteria assesment of the smart grid efficiency using the fuzzy analitical hyerarchy process”, facta universitatis, series electronics and energetics, vol. 29, no. 4, pp. 631–646, 2016. [24] v. kostić, m. petronijević, n. mitrović, b. banković, “experimental verification of direct torque control methods for electric drive applica”, facta universitatis, series: automatic control and robotics, vol. 8, pp. 111–126, no. 1, 2009. [25] a sood, n gupta, “direct torque control scheme of induction motor drive using space vector modulation”, international journal of recent advances in science and technology, vol. 6, no. 1, pp. 1–7, 2019. [26] s. j. kim, j. park, d. h. lee, “a predictive dtc-pwm using 12 vectors for permanent magnet synchronous motor”, in 2019 10th international conference on power electronics and ecce asia (icpe 2019-ecce asia), 2019, pp. 2498–25. [27] s. krim, s. gdaim, a. mtibaa, and m.f. mimouni, “fpga contribution in photovoltaic pumping systems: models of mppt and dtc-svm algorithms”, international journal of renewable energy research, vol. 6, no. 3, 2016. [28] h. abdelkader, f. tahiri, b. fatiha, b. ibrahim, “modelling and simulation of synchronous inductor machines”, algerian journal of renewable energy and sustainable development, vol. 01, no. 01, pp. 8– 23, june 2019. [29] s. krim, s. gdaim, a. mtibaa, m.f. mimouni, “hardware implementation of a predictive dtc-svm with a sliding mode observer of an induction motor on the fpga”, vol. 10, pp. 2224–2856, 2015. [30] o. ouledali, a. meroufel, p. wira, s. bentouba, “genetic algorithm tuned pi controller on pmsm direct torque control”, algerian journal of renewable energy and sustainable development,vol. 1, no. 2, pp. 204–211, 2019. [31] s. belkacem, f. naceri, r. abdessemed, “a novel robust adaptive control algorithm and application to dtc-svm of ac drives”, serbian journal of electrical engineering, vol. 7, no. 1, pp. 21–40, 2010. [32] m. aleenejad, h. mahmoudi, s. jafarishiadeh, r. ahmadi, “fault-tolerant space vector modulation for modular multilevel converters with bypassed faulty submodules”, ieee transactions on industrial electronics, vol. 66, no. 3, pp. 2463–2473, 2018. [33] r. k. pongiannan, s. paramasivam, n. yadaiah, “dynamically reconfigurable pwm controller for threephase voltage-source inverters”, ieee transactions on power electronics, vol. 26, no. 6, 2011. [34] f. tahiri, b. fatiha, b. ibrahim, o. omar, h. abdelkader, “direct torque control (dtc) svm predictive of a pmsm powered by a photovoltaic source”, algerian journal of renewable energy and sustainable development, vol. 01, no. 01, pp. 1–7, june 2019. http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/1131 http://casopisi.junis.ni.ac.rs/index.php/fuelectenerg/article/view/1131 instruction facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 383 393 doi: 10.2298/fuee1603383k smart outlier detection of wireless sensor network sahar kamal 1 , rabie a. ramadan 2 , fawzy el-refai 3 1 department of electronics and electrical communications, higher institute of engineering, el-shorouk academy, el-shorouk city, egypt 2 computer engineering department, cairo university, egypt 3 department of system and computer engineering, el-azhar university, cairo, egypt abstract. data sets collected from wireless sensor networks (wsn) are usually considered unreliable and subject to errors due to limited sensor capabilities and hard environment resulting in a subset of the sensors data called outlier data. this paper proposes a technique to detect outlier data base on spatial-temporal similarity among data collected by geographically distributed sensors. the proposed technique is able to identify an abnormal subset of data collected by sensor node as outlier data. moreover, the proposed technique is able to classify this abnormal observation, an error data set or event affected set. simulation result shows that high detection rate is achieved compared to conventional outlier detection techniques while preserving low positive false alarm rate. key words: wireless sensor network, outlier’s detection, fuzzy logic, spatial and temporal similarity 1. introduction wireless sensor network is considered a promising solution for monitoring and measurement of natural physical phenomena such as temperature, humidity, earthquakes, pressure, light, volt, etc. a typical wsn consists of a large number of very small sensors deployed over a topological area of interest. these sensors are supplied by power resources (batteries, solar cells), measurement unites, processing units and wirelesses tx/rx unit. unfortunately, the data collected from sensor nodes are considered inaccurate and may be even unreliable due to measurement errors or superimposed noise on the received data packets in [2]. duplicated measurement or even missing values are not common in the data set collected by a wsn. a subset of data which appear to be in consistence with the whole received august 30, 2015; received in revised form november 15, 2015 corresponding author: rabie a. ramadan computer engineering department, cairo university, egypt (e-mail: rabie@rabieramadan.org) *an earlier version of this paper was presented at the international conference on recent advances in computer systems racs-2015, hail university, saudi arabia, 2015 [1]. 384 s. kamal, r. ramadan, f. el-refai data set from which it is collected is called an outlier. outlier can be defined as in [2] “an outlier is a subset of observations which appear to be inconsistent with other dataset". on the other hand, outliers as in [3] can be defined as “those measurements that are deviated from the consistence dataset". each of two definitions can be used as a solution to declare the outlier in a data set. abrupt events such as sudden sensor failure, battery power deployment or even natural physical phenomena are also reasons to which outlier data can be attributed. in order to boost the accuracy and reliability of the collected sensor data, an outlier detection process should be applied and possibly corrected. there are three sources of outliers due to environmental changes or error coming from a faulty sensor, which can be defined as (1) errors& noise, (2) events and (3) malicious attacks, the last one being related to the network security as in [2]. noise or error refers to a noise-related measurement or data instance coming from a faulty sensor. outliers caused by errors may occur frequently, while outliers caused by events tend to have a smaller probability of occurrence. erroneous data is normally represented as an arbitrary change and is extremely different from the rest of the data. noisy data as well as erroneous data should be eliminated or corrected if possible. however, events may arise due to sudden change in the real world, for example rainfall, forest fire, chemical spill, air pollution, etc. removing the event outlier from data set will lead to a loss of important hidden information of the data about events as in [4].outliers that are very close to random errors in terms of size can only be determined through the application of outlier tests. outlier classification as an event or error is an important matter. many researches consider outliers and events as similar conditions by treating events as some sort of outliers. due to the fact that there are spatialtemporal similarities between neighboring nodes, measurements enable us to classify outlier as either an event or error. this depends on the fact that error data observations seem to be unrelated, while event observations seem to be spatially correlated as in [5]. the main approaches to determine outliers can be grouped as statistics-based methods, nearest neighbor-based, cluster-based and artificial intelligence techniques. new approaches are used for outlier detection including artificial intelligence techniques such as neural networks and fuzzy logic technique. the latter was suggested by [6] in which it can also be used for geodetic networks for outlier detection. the main aim of outlier detection in wsn is to declare outliers with high detection rate while decreasing the resource consumption of network. our work is based on the observation that in most applications of wsns measurements of sensors in the environment tend to be highly correlated for sensors that are geographically close to each other (spatial similarity), and also highly correlated for a period of time (temporal similarity) as in [5]. using this observation, we take advantage of the spatial and temporal similarity in the sensor data. in the first study, we detect outliers in the univariate attribute in wsn. the main contribution of this paper is the use of euclidean distance and fuzzy logic to detect outliers in wireless sensor networks. however, spatial and temporal similarity were used to make it easy to distinguish between error and event. if probability of output of fuzzy logic is above a prefixed threshold, the observation is considered as an outlier. the model is tested on a real data set from grand-st-bernard as in [7] and implemented using matlab. this paper achieves a high detection rate and still keeps a low false positive alarm rate and computational complexity. the rest of the paper is organized as follows: section (2) shows the necessary background definition related to outlier detection. the proposed algorithm is presented in section (3) along with the assumptions upon which the proposed technique is built. section (4) shows smart outlier detection of wireless sensor network 385 experimental results and the performance evaluation of the proposed technique using a realistic data set. finally, the whole paper is concluded in section (5). 2. related work recently, there are many researches in outlier detection of wsn to improve reliability and quality of measurement sensor. these researches used different techniques to detect outlier such as statistical-based, nearest neighbor-based, clustering-based, classificationbased, and spectral decomposition-based approaches. in general, these researches can be those that do not use spatial or temporal correlation data set or those that are based on spatial or temporal correlation only or on both. in 2006, the author in [8], uses the spatial correlation that exists among neighboring sensor nodes to distinguish between outlying sensors and event boundary. in this model, each node calculates the difference between its own measurements and the median from its neighboring measurements. then outlying node is declared when the absolute value of its measurement‟s deviation degree is greater than a pre-selected threshold. this technique suffers from a low detection rate because it ignores temporal correlation between sensor data reading. as shown by [9], this model used a cluster based technique to identify the global outlier. first, each node clusters the reading and reports cluster summaries and then transmits the raw sensor reading to its cluster head. the cluster head collects cluster summaries from all of its nodes before sending them to the sink. an outlier cluster can be declared in the sink if the cluster's average inter-cluster distance is greater than one threshold value of the set of inter-cluster distances. however, these models suffer from the choice cluster width parameter. additionally, these techniques increase computational complexity when computing the distance between data instance. in [10] author uses distance similarly to identify global outliers in wsn. each node uses a distance in a similar way to identify local outliers and then broadcast abnormal data instances to all neighboring node for verification. this technique is repeated until all neighboring nodes agree on the global outliers. this technique increases computational complexity and it isn't adapted for a large scale network. in 2007, the proposed technique as in [11] uses one class quarter sphere based technique to detect outliers in wsn. this technique takes advantage of temporal correlation to identify local outliers at each node. a measurements sensor that lies outside the quarter sphere is considered as an outlier. each node transmits only brief information to its parent for global outlier‟s classification. this technique suffers from a low detection rate because it ignored spatial correlation between neighboring nodes. at 2008, the author as in [12] uses a centered quarter-sphere support vector to detect local outlier in wsn. this technique takes advantage of spatial correlations that exist in sensor data of adjacent nodes to reduce the false alarm rate and to distinguish between events and errors, but it ignores temporal correlation and increases computational complexity. but in 2009, the author as in [13] used outlier detection technique to identify outliers in data set of wsn. this technique takes advantage of spatial temporal correlation exist among sensor data reading. in 2011, author as in [14] proposed outlier detection method in the wireless sensor networks and distinguishes between event and error. this technique is used to classify the sensor node data as local outlier or cluster outlier or network outlier. this technique considers the network outlier or cluster outlier as event and local outlier as error. this algorithm suffers from high computational complexity. in 2012, the author of [15] use the advantage of temporal correlation only to detect the outlier in wsn. however, this technique suffers from some computational complexity. this approach 386 s. kamal, r. ramadan, f. el-refai differs from our approach in that our approach has the advantage of spatial-temporal similarity combined with fuzzy logic to detect outlier and identify errors and events with high detection rate and relatively low false positive rate in comparison with the result in [15]. in 2013, the author as in [16] uses temporal and spatial properties to identify outliers and distinguish between event and error but with low detection rate and false positive rate in comparison with our approach. 3. the proposed stodm technique sensor nodes are assumed to be densely deployed and synchronized in wsn. a subset of sensors is considered as members of the same cluster if they fall within the same radio transmission range of each other. at any time interval , each node reads a data vector sij where “i” is the time index of the data symbol and “j” is the node spatial id. the potential of an outlier detection technique is to identify a subset xi of each sensor set si as outliers. a super advantage of a given detection technique is to classify deviation data instance as event or error. in this section, the proposed approach is introduced in details. many outlier detection techniques have been developed, however, they did not take into account the interesting events. on the other hand, several recently developed researches are interested only in events and did not care about erroneous data. in this paper, a new distance-based approach depends on spatial-temporal similarity combined with fuzzy logic-based approach is proposed to classify outliers, i.e. error data or events. our methodology consists of the following steps: first step the spatial and temporal similarity is calculated, each one of these is entered as input or (membership function) to fuzzy logic to detect outliers in each node. second step classifies the outlier as event or error. 3.1. spatial-temporal similarity in our proposed algorithm, spatial-temporal similarity is calculated using a two-step process. first step, the temporal similarity of a given data set of sensor node is calculated on point by point basis and is given by first order difference| si2-si1|. the absolute difference is compared to a pre-specified threshold which is calculated according to tolerance of temperature sensor. a data point si2 is considered similar to other points if the absolute first order difference does not exceed the threshold. otherwise, dissimilarity is obtained and point of data may be outlier. second step, spatial similarity is calculated based on the distance between neighboring nodes. we use the euclidean distance to calculate similarity measure between two points x, y, that are in the same transmission range and are in the same close time which is calculated as eq. (1). euclidean distance is a popular choice for univariate and multivariate continuous attributes as [17]. data instance in point x is considered similar to data point in y if euclidean distance d(x, y) does not exceed preselected threshold. spatial link is defined as number of spatial similarity to each point with its neighbors as in eq. (2). where spatial similarity threshold is calculated by computing mean distance of all data points in the close time. d(x, y) =√( ) (1) smart outlier detection of wireless sensor network 387 spatial link = ∑ (2) where n is the number of neighboring nodes. 3.2. fuzzy logic model recently, many approaches have been tested on decision making theories. some of the artificial techniques that are used in outlier analysis are neural networks, support vector machine and fuzzy logic as in [18]. our approach use fuzzy logic as one of artificial techniques to detect outliers in data set of wsn. fuzzy logic is a logical model providing a general idea about the decision process in the analysis of the data set. the fuzzy logic suggested by [19] is essentially an approach that allows transition values to make a definition between the conventional values such as right/wrong, yes/no, high/low. the main purpose of the method is to bring a certainty to assigning a membership degree to the concepts which are hard to express or have difficult meaning. a fuzzy logic system consists of three main parts, which are fuzzification, rule base and defuzzification. firstly, fuzzification can be defined as a transfer between a definite system and a fuzzy system and it describes a property of an object in a certain fuzzy set. the objects can belong to „low, middle, high‟ property classes with membership functions, and each object is assigned to a membership degree between 0 and 1. this technique uses temporal and spatial similarity as two inputs or two membership functions to fuzzy system. these membership functions are chosen empirically and optimized using a sample input/output data. the most common membership functions include a triangle, trapezoid, gauss curve and sigmoid. as the membership functions represent the fuzzy set, the selection of their shape and form directly affects the decision process. secondly, the rule base combines the membership functions from the fuzzificator with the rule handling data such as „if, and, although, if not‟ which is based on the database and stored there. the if-then rules define a connecting antecedent to the consequent (i.e. input to output). these rules are given weights based on their criticality as in [19]. with this approach, measurements can be classified according to their membership degrees by adequate membership, e.g.  if spatial link (low) and temporal similarity (low) then outlier (high)  if spatial link (low) and temporal similarity (med) then outlier (high)  if spatial link (high) and temporal similarity l (high) then outlier t (low)  if spatial link (med) and temporal similarity (med) then outlier (med) thirdly, in the defuzzification unit, the rule results that are obtained from the rule handling unit are evaluated in the fuzzificator and turned into definite results as in [19]. outlier is declared according to the rule results. fig.1 represents all three stages of fuzzy logic. fig. 1 three stage of fuzzy logic 388 s. kamal, r. ramadan, f. el-refai 3.3. outlier classification the third step is to classify the degree of outlier value (error or event). in this step, we aim to know the source of the values labeled as outlier. there are two possible options; either this outlier value is due to an error, as a result of a low battery or network damage, or due to an event or phenomena in the surrounding environment. our idea is based on the following observation in the result of this technique “error in the sensor data are likely to be spatially unrelated while event measurements are probable to be spatially correlated”. on the other hand, data instance tends to be correlated in both time and space. hence, we employed this fact by using data from neighboring nodes to assist measuring the spatial similarity, also using time stamps between readings to assist measuring the temporal similarity. in other words, this technique detects the outlier in the previous step and if data instances are declared as outlier, it produces similar values or values larger than the outlier readings in all nodes. in addition, if those neighboring nodes readings are within the same time range, this indicates an interesting event in the physical world. otherwise, it is likely to be an erroneous data. in our work, we assume that a sensor node (x) is considered to be a neighbor of another node (y) if x is within y‟s communication range, and vice versa. 4. experimental result and performance evaluation in this section, we investigate the effectiveness of our proposed approach when applied on the real dataset from st.-bernard wireless sensor network in [7]. we compare the accuracy of our algorithm with another detection method called stgod method [15], which is based on spatial temporal correlation among neighbor nodes. we evaluate accuracy and the scalability of the proposed method against the stgod method on a real dataset. 4.1. study area and data description the proposed outlier detection described in section iii is applied to a realistic data set collected from 23 sensor nodes. these nodes are geographically distributed over switzerland and italian boarder, representing two clusters. the small cluster, situated in the italian boarder, contains the five sensor nodes from whose data set is obtained. fig. 2 illustrates the fig. 2 a small cluster (consists of five nodes) of the grand st deployment and their corresponding metric coordinates (e-n). smart outlier detection of wireless sensor network 389 geographical distribution of these nodes over the area in which they are deployed. the collected data represent temperature as the attribute of interest. temperature values are measured over a period 06:00–14:00 during the day (30th september, 2007). fig. 3 depicts a plot of temperature measurements sensors for all nodes in a small cluster (node25, node28, node29, node31, node32). the measurement tolerance of the deployed sensors is about ±0.3°c. fig. 3 represented data measurements of each sensor node. 4.2. results and performance evaluation this section is devoted to evaluating the performance of the outlier detection technique proposed in section (iii). two performance metrics are considered. the first is the detection rate (dr) defined as the ratio of the correctly detected outliers to the total number of outliers in a given data set. another performance metric of interest is the false positive alarm rate (fpr) which is defined as the ratio of normal data points incorrectly classified as outliers to the total number of normal data points. this section shows outliers in each node, detection rate, and false positive rate to each node. to evaluate performance of outlier detection needs a reference dataset. usually, labeling techniques are utilized to label sensor measurements and classify each data point as either a normal pattern or anomalous. the choice of the labeling technique powerfully influences the evaluation of the outlier detection techniques. there are three labeling techniques used, as in [15], i.e., running average-based, mahalanonis distance-based, and density-based, but our research used the first one which fits the data set as in [15]. in this research two software are applied, statistical model and fuzzy logic simulink, implemented by matlab. as in fig. 4 and fig. 5, spatial temporal outliers in univariate attribute (temperature) in both node25 and node29, whose detection rate in node25 is about 92% and fpr is 10.4%, while in node29 the detection rate is 93.75% and high false positive rate is 18.33%. 390 s. kamal, r. ramadan, f. el-refai fig. 4 spatial temporal outliers in node29 detected by (stodm) fig. 5 spatial temporal outliers in node25 detected by (stodm) while in fig. 6, fig. 7 and fig. 8, node28, node31, and node32, they have high detection rate 100% and fpr 9.16, 10, 4.5% respectively in each node. fig. 6 spatial temporal outliers in node28 detected by (stodm) smart outlier detection of wireless sensor network 391 fig. 7 spatial temporal outliers in node31 detected by (stodm) fig. 8 spatial temporal outliers in node32 detected by (stodm) fig. 9 shows the result of accuracy assessment for detected outliers by using pattern approach. the highest detection rate (100%) is at node (28, 31, 32) while the lowest detection rate (92%) is at node 25. the lowest amount of fpr is at node 32 (4.5%) while the highest rate is at node 29 (18.33%). fig. 9 accuracy of the detected outliers at different nodes 392 s. kamal, r. ramadan, f. el-refai extensive ratio on the collected data set shows that both the detection rate and fpr increase when the threshold is decreased. a fixed threshold of temporal similarly and the mean of euclidean distance of all nodes is computed as threshold of spatial similarity that yields an average detection rate of 97.15% and fpr of 10.472%. the relative high fpr is a result of misclassifications of some normal observations, while the high detection rate achieved is a result of considering spatial temporal similarly. table 1 shows the comparison between the proposed storms with the most frequently used data labeling technique, namely the tsod and the stgod technique with the detection rate and false positive alarm achieved by each algorithm. it can be observed that the proposed algorithm outperforms these techniques in terms of detection rate. both references models are applied to the same data set as considered in our model. another advantage of the proposed technique is that it is able to distinguish between errors and events in a given data set obtained from the sensor node. classification of the outlier source is reported in table 2. table 1 comparison between our approach (stodm) and stgod model proposed of running average in [15] method dr% fpr% stodm 97.15 10.4 tsod 23.4 1.7 stgod 72.34 10.94 table 2 number of outliers and events detected at different nodes using stodm (our model) nodes no of outlier no of event node25 48 5 node28 23 4 node29 60 5 node31 25 5 node32 21 4 5. conclusions stodm algorithm proposed in this paper combines the fuzzy logic theory and distance base similarity to detect outliers and is a new try in the area of outlier detection for spatial temporal similarity. the proposed technique is able to identify normal and outlier data. moreover, error and event are also distinguished. high detection rate is achieved compared to conventional techniques while preserving the low positive alarm rate and also reducing computational complexity because it uses euclidian distance to calculate spatial similarity among neighboring nodes. for future work, we plan to build an algorithm to detect outliers in multi attributes and to consider dependencies among the attributes of the sensor data as well as spatialtemporal correlations that exist among the observations of neighboring sensor nodes. smart outlier detection of wireless sensor network 393 references [1] s. kamal, r. ramadan, f. el-refai, “smart outlier detection of wireless sensor network by fuzzy logic”, in proceedings of the international conference on recent advances in computer systems racs-2015, hail university, saudi arabia, november 2015. [2] y. zhang, m. nirvana, h. paul,”outlier detection techniques for wireless sensor networks,”,a survey, university of twente, p.o.box 217 7500ae, enschede, the netherlands, 2010. [3] v. chandola, a. banerjee, a. kumar, v,”outlier detection: a survey”, technical report, university of minnesota , 2007. [4] v. jha, o. veer singh, y. outlier, ”detection techniques and cleaning of data for wireless sensor networks”, a survey, international journal of computer science and technology, 2012. [5] x. luo, m. dong, y. huang, ”on distributed fault-tolerant detection in wireless sensor networks”, ieee trans computer, vol. 55, no. 1, pp. 58-70, 2006. [6] h. konak, a. dilaver, e. ozturk, ” the effects of observation plan and precision on the duration of outlier detection and fuzzy logic”, 2005, a real network application, survey review, vol. 38, 298, pp. 331341, 2005. [7] sensor scope system. http://sensorscope.ep.ch/index.php/main page [8] s. subramaniam, t. palpanas, d. papadopoulos, v. kalogeraki, d. gunopulos, ”online outlier detection in sensor data using nonparametric models”, seoul, korea:, vldb; young, the technical writer‟s handbook. mill valley, ca: university science, 1989, pp. 187–198m, 2006. [9] s. rajasegarar , c. leckie, m. palaniswami, j. c. bezdek,” distributed anomaly detection in wireless sensor networks”, uk: ieee, iccs, pp.12-16, 2006. [10] j. branch, b. szymanski, c. giannella, r. wolf, ”in-network outlier detection in wireless sensor networks”, in proceedings of ieee icdcs, 2006. [11] rajasegarar, s., leckie, c., palaniswami, m. and bezdek, j. c,”quarter sphere based distributed anomaly detection in wireless sensor networks,”proceedings of ieee international conference on communications, pp. 3864-3869,2007. [12] y. zhang, n. meratnia, and p.j.m. havinga, ”an online outlier detection technique for wireless sensor networks”, in proceedings of the third ieee european conference on smart sensing and context (eurossc), pp. 25-26, 2008. [13] y. zhang, n. meratnia, and p.j.m. havinga, ”adaptive and online one-class support vector machinebased outlier detection techniques for wireless sensor networks”, in proceedings of the ieee 23rd international conference on advanced information networking and applications workshops/symposia, pp. 990-995, 2009. [14] m.s. mohamed, t. kavitha, ”outlier detection using support vector machine in wireless sensor network real time data”, int j soft comput eng, vol.1, no. 2, 2011. [15] y. zhang, n.a.s. hamm, n. meratnia, a. stein, m. van de voort, p.j.m. havinga,” statistics-based outlier detection for wireless sensor networks”, international journal of geographical information science, 2012. [16] a. amidi, n.a.s. hamma, n. meratnia, ” wireless sensor networks and fusion of contextual information for weather outlier detection”, international archives of the photogrammetry, remote sensing and spatial information sciences, vol xl-1/w3, 2013. [17] a. fawzy, h.m.o. mokhtar, o. hegazy ,”outliers detection and classification in wireless sensor networks”, egyptian informatics journal, vol. 14, pp. 157-164, 2013. [18] s. syed, m.e. cannon, ”fuzzy logic based-map matching algorithm for vehicle navigation system”, in proceedings of the urban canyons, ion national technical meeting, san diego, ca, pp. 26-28, 2004. [19] y. sisman, a. dilaver, s. bektas, ”outlier detection in 3d coordinate transformation with fuzzy logic”, acta montanistica slovaca ročník 17, číslo 1, pp. 1-8, 2012. 12555 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 135 147 https://doi.org/10.2298/fuee2401135k © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper towards decentralized resource management for disasters: ngo-rmsd enis karaarslan1, arzu özkan2, cemal dak1, umutcan korkmaz1 1department of computer engineering, muğla sıtkı koçman university, muğla, türkiye 2department of english language & literature, muğla sıtkı koçman university, muğla, türkiye orcid ids: enis karaarslan https://orcid.org/0000-0002-3595-8783 arzu özkan https://orcid.org/0000-0003-0195-5282 cemal dak https://orcid.org/0009-0009-6499-4570 umutcan korkmaz https://orcid.org/0000-0001-6196-862x abstract. the necessity for an efficient resource management system during and postdisaster is underscored by the prevalent coordination and resource management challenges faced by various organizations, including non-governmental organizations (ngos) and government units. to address these problems, our system proposal introduces ngo-rmsd, a blockchain-based decentralized system designed to enhance collaborative efforts during and after disasters. utilizing the quorum framework for its energy efficiency, ngo-rmsd enables seamless transactions and updates across parties, eliminating intermediaries and fostering a trusted environment for resource management. this paper details the development of this decentralized system, incorporating smart contracts for autonomous operation. decentralized systems provide superior security, transparency, and immutability, making them fundamentally more robust and efficient than centralized systems for managing complex, multi-stakeholder scenarios like dis-aster response. this decentralized model ensures transparency, eliminates intermediaries, and enables all parties to conduct transactions and updates reliably. these contracts effectively assess and prioritize the needs of affected individuals, ensuring timely and accurate resource allocation. a proof of concept has been implemented, demonstrating the practicality and potential impact of ngo-rmsd. designed in alignment with ngo's field requirements and distributed under a free software license, this system promises to significantly improve coordination for disaster resource management. possible improvements and future work for a more sustainable system is discussed. looking forward, we aim to enhance the efficiency and effectiveness of disaster relief efforts by providing assistance to a larger number of affected individuals in a more organized and expeditious manner. key words: disaster, non-governmental organizations, crisis management, organization, blockchain, sustainability received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: enis karaarslan department of computer engineering, muğla sıtkı koçman university, muğla, türkiye e-mail: enis.karaarslan@mu.edu.tr https://orcid.org/0000-0002-3595-8783 https://orcid.org/0000-0003-0195-5282 https://orcid.org/0009-0009-6499-4570 https://orcid.org/0000-0001-6196-862x 136 e. karaarslan, a. özkan, c. dak, u. korkmaz 1. introduction predicting the outcomes of disasters with high precision is a complex task, due to the variability in regional characteristics, severity, type, and the specific climatic and geographical conditions prevalent at the time of the disaster's occurrence [23]. due to these situations in pre-disaster forecasting, which preclude absolute precision, the effectiveness of the preventative measures adopted is consequently relative and variable. for this reason, the importance of first and early intervention in disaster situations is critical. even in developed nations like the united states and japan, disaster preparedness measures remain inadequate [1]. although disaster management is primarily the responsibility of local governments, numerous non-governmental organizations (ngos) actively participate in crisis management during such periods. given the extensive societal damage caused by disasters, ranging from human and animal welfare to natural and production resources, ngos specializing in various domains play pivotal roles in post-disaster recovery processes. additionally, ngos and volunteers significantly contribute to disaster relief efforts. however, critical coordination challenges persist among these stakeholders in post-disaster crisis management. today, ngos are extensively involved in various aspects of disaster management. they contribute to community preparedness, mitigate pre-disaster risks and post-disaster losses, and engage in short-term interventions and long-term recovery initiatives. without the assistance of voluntary organizations, it is unlikely that local governments and states can adequately address the needs of disaster victims. effective dis-aster management requires collaborative efforts, involving voluntary organizations at all stages of disaster response and fostering coordination among stakeholders [2]. ngos operate to support local governments and the public during crises, aligning with their mission objectives [3]. an example of such ngo involvement is ahbap, a turkish organization that actively participated in post-disaster recovery following the 2020 elazig sivrice and the 2023 kahramanmaraş earthquakes in turkey. a member of our team actively engaged as a volunteer with ahbap, contributing substantially to post-disaster recovery endeavors. our assessments highlight inefficiencies in resource allocation and challenges in providing assistance to the most vulnerable individuals, with ngos often operating independently of one another. upon analyzing ngos, it becomes evident that they vary in missions, visions, and resources, each possessing unique strengths. the most significant challenge discerned in postdisaster management pertains to the coordination deficit between ngos and governmental bodies, resulting in suboptimal utilization of resources. this circumstance engenders deficiencies in resource allocation, consequently impeding the pace of post-disaster recovery endeavors. hence, the research question in this study is “can block-chain be used to address these resource management problems in the post-disaster process?” subsequent sections of the paper delve into discussions on resource management during disasters, followed by an exploration of decentralization. related works in the field are presented, leading to the detailed proposal of the ngo-rmsd system in section 5. the implementation of the proof of concept for this system is outlined in section 6, while the conclusion and avenues for future research are provided in the concluding section. 2. resource management need during disasters in this study, türkiye serves as a case owing to the high frequency of natural disasters it has encountered in recent years. while türkiye has witnessed a range of disasters, towards decentralized resource management for disasters: ngo-rmsd 137 including forest fires and floods, this research primarily focuses on earthquakes, which have been the most devastating in terms of destruction. the data and examples within the study are specifically tailored to illustrate the impact and management of earth-quake disasters in türkiye. according to earthquake statistics; earthquake rates in türkiye are increasing every year. according to boğaziçi university kandilli observatory data, 20,095 earthquakes greater than 3.5 magnitude have occurred in türkiye in the last 100 years [21]. additionally, according to afad's (disaster and emergency management presidency) data, hundreds of thousands of citizens were killed and more than one million houses were destroyed or damaged in these earthquakes [7]. in our ongoing engagement with ngos active in disaster response, we have observed significant challenges in resource management and coordination during crises. following the development of our ngo-rmsd proposal [27], türkiye has experienced numerous large-scale natural disasters, including earthquakes, floods, and fires. research con-ducted in the aftermath of these events has highlighted that ngos' efforts to establish internal coordination networks often fall short in effectively managing these disasters [22]. a primary contributing factor to this inefficiency is the lack of robust technological systems. presently, resource management and coordination during disasters continue to face critical challenges. the nature and scale of the disaster, along with varying climatic and geographical conditions, lead to diverse and complex needs. the first 48 hours post-disaster are crucial for effective intervention, underscoring the urgency for developing comprehensive systems that address not only the gaps in resource management and co-ordination but also cater to the broader spectrum of needs arising in such emergency situations. the primary challenges manifest in monitoring of the post-disaster essential needs and resource administration, spanning logistical operations, storage facilities, and distribution processes. post-disaster necessity tracking encompasses the initial validation of requirements, subsequent monitoring of aid provisions, and the prevention of any misuse of resources or support, thereby facilitating effective management of assistance efforts. moreover, challenges arise in human resource management, as ngos involved in voluntary endeavors amid disasters possess access to diverse resources, encompassing aid provisions and workforce capabilities. ensuring proper coordination among ngos is essential for effective resource management and enhancing post-disaster recovery efforts while maintaining trust in ngos. autonomous systems present an opportunity to efficiently and promptly manage these resources, leveraging technology to simplify resource management and ensure coordination. 3. decentralization in many sectors and usage scenarios, there is a movement away from centralized systems and towards decentralized models. the intermediaries in the centralized systems slow down the operation and sometimes may not function as intended. blockchain technology enabled us to develop decentralized systems where we can make transactions between peers without using any intermediary [19]. blockchain technology operates as a distributed ledger system, facilitating trust among users directly, eliminating the need for intermediaries. this trust is established through interconnected records, referred to as transactions, which are organized into blocks by the computers (nodes) managing the blockchain system [4]. these transactions are stored securely in an immutable ledger. given the decentralized nature of the blockchain system, it 138 e. karaarslan, a. özkan, c. dak, u. korkmaz necessitates a mechanism for nodes to reach consensus on transactions, blocks, etc. consensus protocols fulfill this function within blockchain networks, with the specific protocol chosen based on the characteristics of the blockchain in question. diverse types of blockchain networks exist, distinguished by factors such as node reliability, anonymity, and ledger accessibility. public networks like bitcoin [4] permit unrestricted access to transaction records, whereas private networks like quorum [5] and r3 corda [6] limit access to authorized users. the degree of decentralization, ranging from partial to complete, is contingent upon various hardware and software considerations, including network structure, node dispersion, consensus mechanisms, and developer expertise [19, 20]. while bitcoin serves as a prime example of complete decentralization, enterprise solutions may exhibit limited decentralization, aiming to integrate essential stakeholders within specific ecosystems without monopolization. hybrid architectures, which integrate blockchain solutions and centralized servers, offer increased flexibility in system design [19]. 4. related works limited research exists on disaster management, with some attention given to the utilization of decision support systems [8] and the application of digital twins, as evidenced in a recent study [9]. notably, there are comprehensive open-source solutions like sahana eden (https://sahanafoundation.org/) that offer multiple functions, yet their adoption remains limited. insights gathered from our expert interviews and ngo consultations shed light on potential reasons for this, primarily stemming from a lack of alignment with end-users' needs and concerns regarding transparency and trust in existing systems. blockchain technology presents a promising avenue for addressing these challenges by eliminating intermediaries and establishing trust. while initially associated with cryptocurrency and criticized for its high energy consumption, advances in enterprise blockchain frameworks offer the possibility of creating trusted environments with reduced energy consumption. furthermore, blockchain holds potential across various domains such as supply chain management, medical data sharing, ai marketplaces, and initiatives with social impact [10]. existing literature includes few proposals for decentralized systems, particularly focused on fundraising efforts [11] and aid distribution in disaster or refugee scenarios [12]. one noteworthy study [13] explores the integration of iot and blockchain within supply chains to enhance the efficiency of humanitarian aid delivery. however, these proposals often lack technical depth and fail to engage ngos directly. another theoretical model [14] challenges the feasibility of establishing a trusted supply chain for humanitarian aid, raising important considerations for future research. to our knowledge, there exists no resource management system dedicated to disasters that specifically emphasizes collaboration among ngos. consequently, this system proposal is concentrated on developing a prototype aimed at creating significant social impact through enhanced ngo coordination in disaster management scenarios. 5. system proposal the ngo-rmsd model, depicted in figure 1, involves the addition of nodes to the blockchain network by ngos using blockchain technology. all transactions within the system will be securely encrypted and stored in an immutable manner. the distributed towards decentralized resource management for disasters: ngo-rmsd 139 application, facilitated by smart contracts on the blockchain, will involve participation from ngos, individuals in need, and supporters. ngos, sanctioned by the ministry, serve as voluntary platforms aiding local governments and ministries during disasters. individuals in need refer to those adversely affected by disasters, both materially and emotionally. supporters encompass individuals, institutions, or organizations willing to provide tangible or monetary assistance to disaster victims [27]. fig. 1 ngo-rmsd model underscoring the importance of privacy, the design of the system adheres to regulations such as the turkish law on the protection of personal data (kvkk) [15] and the eu general data protection rules (gdpr) [16]. given the immutability of transaction records within the blockchain, they will not contain any personal information. instead, such data will be stored exclusively in separate databases managed by individual ngos. it is the responsibility of these ngos to uphold the privacy of this information and ensure compliance with relevant legal requirements. while the utilization of non-interactive zero-knowledge proof (nizk) based autonomous codes has the potential to enhance privacy further [17], this aspect is not within the scope of our current study. 5.1. architecture the system is formed of two main components, as illustrated in figure 2; a blockchain (quorum) network for ngo nodes and a web service. these components communicate through application programming interfaces (apis), with the web3js library facilitating communication from node to js back-end. the front-end interface, developed using html and css, provides users across various platforms with a web page interface. communication between the front-end and back-end is achieved through the reactjs framework. qbft [24] is chosen as the consensus protocol of the proposed system as it is more stable, more efficient, and can support more nodes than the istanbul byzantine fault tolerance (ibft) consensus protocol. quorum and hyperledger besu recommended qbft as the enterprise-grade consensus for production. quorum developed qbft to 140 e. karaarslan, a. özkan, c. dak, u. korkmaz resolve the known problems of ibft [26]. qbft provides immediate finality, a dynamic feature set, optimal byzantine resilience, and o(n2) message complexity for n validators [24]. validators are the approved accounts that can validate transactions and blocks. when a new block is proposed on the chain, this block is inserted into the ledger after a supermajority (greater than or equal to 2/3) number of validators sign the block. fig. 2 ngo-rmsd system architecture we installed four initial (startup) nodes to initialize the blockchain network. qbft and ibft consensus protocols require four validators as a minimum number to be byzantine fault tolerant [25]. it is desirable to add as many nodes as possible to the system for enhanced security and availability. after system initialization, the first node account assumes an "admin" role, responsible for distributing admin privileges to predefined accounts on predetermined nodes following the community protocol. each ngo participating in the blockchain network must have at least one node representing the institution. since the system operates within a docker image, there is no necessity to reserve a dedicated node machine solely for this purpose. this machine can still be utilized for general computing tasks by the ngo. volunteers or ngo staff create their accounts through these nodes. these accounts will be used for reviewing support offers or requests and taking action. efforts to automate this process are ongoing. details are given on the github repo page. 5.2. smart contracts while blockchain technology is fundamentally oriented towards decentralization, certain implementations may also include centralized features. this is particularly evident in private or permissioned blockchain frameworks like quorum, which delegate authority to specific entities for tasks such as adding nodes or users. the proposed system aims to prioritize trust and transparency. it assigns the admin role to ngos granting them to onboard new ngos into the system and the authority to assign user roles such as checker or creator. smart contracts allocate distinct roles to users, including towards decentralized resource management for disasters: ngo-rmsd 141 admin, checker, and creator. the admin role serves as the system administrator, while the checker role is designated to ngos to verify the accuracy of proposed support or requests. the creator role, accessible to all system users, is crucial for initiating support offerings or requests. smart contracts have been developed to serve various functions, categorized as role management, requirement and support creation, approval processes, and request support listing. role assignment and listing functions, initiated by the system administrator, aim to allocate roles to users using the setuser function and display user roles using the getuserauth function. authority-role control modifier functions are utilized by organizers to compare the hash of a user's role with the assigned role hash. the requirement creation function allows users in the "creator" role to generate new needs, specifying details such as type and quantity, which are then added to the need list with a "waiting for confirmation" label. similarly, the support creation function empowers "creator" role users to create new support entries, detailing aspects like type, quantity, and transportation type, with the created support appended to the support list marked as "waiting for approval". approve functions are designed for users with the "checker" role, enabling them to validate pending needs and supports labeled as "waiting for approval". once validated, the labels transition to "approved", and the approved support is listed in the approved support list. request-support listing functions facilitate the display of all needs and supports, with functions like showsupport and showsupports listing known supports, while showallapprovedsupports lists approved supports. showneedoffers and showneed functions list needed records and known need records, respectively. the last two functions, showneedstatus and showsupportstatus, are accessible to "checker" role users and are responsible for listing known requests and confirmation status [27]. 5.3. system application flow the system's application flow, depicted in figure 3, begins with the user selecting their application type. this selection is transmitted to the quorum node and recorded as an unapproved application. a transaction is then broadcasted to the network, updating the ledgers of nodes. subsequently, any unapproved applications within the network are reviewed by an ngo staff member who communicates with the applicant to validate the application. upon validation, indicating the legitimacy of the requirement or support, the applicant's information is documented in the local database, and the application is approved. following validation, the approved application is stored, and another transaction is initiated to update the network's ledgers. if no unapproved applications remain, the application flow process concludes. the initial system comprises three nodes, demonstrating a scenario involving two ngos with at least one one, utilizing total five nodes. the ngo-rmsd prototype is implemented on the quorum framework, offering a private/permissioned blockchain structure with low energy consumption. docker container technology facilitates integration into any operating system without the need for specialized hardware. web3js facilitates communication between the quorum network and the web interface backend, while smart contracts are written in solidity. qbft consensus protocol is employed, with nodejs utilized in the backend for its asynchronous functionality. 142 e. karaarslan, a. özkan, c. dak, u. korkmaz fig. 3 system activity diagram [27] 6. implementation this project utilizes open-source and freely licensed software, with minimal dependencies on proprietary products. the smart contracts are deployed on the ds4h blockchain research network [18], currently consisting of five quorum nodes, and users access the system through the web interface, designed to enable disaster victims to submit requests or provide support through forms. all system operations are recorded on the blockchain as transactions, and users can track transaction statuses through the web interface. the smart contracts developed in this project are open to improvement. the current version of the system is given and described on the public github page (https://github.com/mskubcrg/akys). we continue to improve the smart contracts and implement security testing. these smart contracts are deployed in the ds4h blockchain research network. the users will use this system through the web interface. prototype web interfaces have been developed for the system, allowing disaster victims to submit requests or provide support using forms displayed in figure 4. every operation within the system is recorded on the blockchain as transactions. users have the capability to monitor the status of these transactions via the web interface depicted in figure 5. towards decentralized resource management for disasters: ngo-rmsd 143 fig. 4 user forms of giving support and applying for aid 6.1. performance test the test scenario was carried out with tubu arge company. we used two generalpurpose aws servers ec2 with 3.3 ghz intel xeon scalable processors. each instance has 2 gb memory, 2 vcpus, and 100 gib ssd. canonical, ubuntu, 22.04 lts operating system is used. each instance has 3 nodes, 6 nodes are used in total. quorum with qbft consensus protocol is used. the block time interval is set to one second (default value was 5). the empty block interval value is used as 600 seconds (the default value was 60). the verbosity of logs is reduced from five to three, as this is enough to see the errors. a test that is similar to normal daily blockchain usage was conducted. all transaction requests were made by incrementing the nonce value of a single user. requests were sent to remote nodes. while calculating the average tps, elapsed time and successful transactions were calculated. the successful transaction criterion is considered as getting a receipt. the receipt is available only for mined transactions. in the first test, transactions were executed five times in total, at 5-second intervals, starting from 100 transactions and increasing up to 500 transactions. we reached up to 95.66 tps max. in the second test, transactions were executed one time with 400 transactions. we reached up to 50.02 tps max. a maximum of 374 transactions are fit into one block. 144 e. karaarslan, a. özkan, c. dak, u. korkmaz fig. 5 interface to track approved requests 6.2. testing the post-disaster scenario we tested the system as a simulation where a small earthquake damaged a village. there were needs like food, goods, accommodation, transportation and financial support. ahbap ngo (https://ahbap.org/) is actively giving support during disasters. arzu özkan is an active volunteer in the ahbap organization. she checked if these needs were valid and then approved the needs on the system. then the scenario continued as informing the parties. 7. discussion and findings our tests confirmed the decentralized system can be useful. we also want to emphasize the following possible improvements for a more sustainable system (see fig. 6): ▪ need categorization ▪ regional need density analysis ▪ logistics acceleration ▪ warehouse assignment and prioritization ▪ regional need density analysis ▪ estimate real need ▪ activity report ▪ decentralized autonomous organization (dao). a highly advanced categorization can be made when communicating needs, and relevant need request categories can be automatically assigned to relevant ngos. for example, all food needs are forwarded to ngo a, and shelter request needs are forwarded to ngo b. since those in need do not always have access to technology or may not use it because of electricity power outage or communication service outages; the real need is towards decentralized resource management for disasters: ngo-rmsd 145 generally much greater than informed. we should also work on identifying a common pattern to provide support to people who cannot reach us. fig. 6 resource management improvements need density analysis should be conducted on a regional basis. for example, if the needs coming from region a are generally in a similar pattern (food, tent, shelter, etc.), early steps can be taken, such as having resources ready in that region. we experienced this in the kahramanmaraş (türkiye) earthquake in 2023. we created a location-based need density map by categorizing the incoming needs and creating a density-based map chart. then, instead of wasting time by reaching out to each person in need in the same region one by one, ngos identified the intensity of need in that region and delivered resources in the requested category to the associated locations. the logistics and distribution process of resources became much easier then. logistics is a problem during a disaster and requires intensive resource management. it can be very difficult to distribute the resources. needs can be grouped from the same or nearby location to accelerate the confirmation and delivery processes to facilitate logistics operations. then these can be delivered to nearby locations with a single truck or a group of coordinated trucks. warehouse assignment can be done by automatically matching incoming needs with the materials in the associated warehouse. it will require a system integrated with the warehouse inventory of ngos. prioritization should be done according to the warehouses in the nearest location when making matches. the system can give an activity report of each ngo. a detailed listing of each ngos activities on the system can be generated. these activities can be formed of which request's status was changed by which ngo member, and when, etc. these are very critical, especially for post-disaster inspections. a trusted reporting system will also relieve the legal pressure on the ngos. 146 e. karaarslan, a. özkan, c. dak, u. korkmaz a decentralized autonomous organization (dao) is needed to make such a system sustainable. it will ensure rapid decisions on managing the resources. ngos will be active users of the system and decide together on new users and improvements to the system. such a management system was proposed in a previous study [18] and is active in the ds4h blockchain research network. 8. results and conclusions a decentralized resource management system (ngo-rmsd) for disasters is proposed and a prototype is implemented as a proof of concept. the proposed system will enable ngos and government agencies to act in coordination. all transactions are transparent in this trusted system design. the proof of concept implementation of the ngo-rmsd demonstrated promising outcomes, with smart contracts and project details publicly accessible on the project's github page (https://github.com/msku-bcrg/akys). live testing of the proposed system was implemented in the ds4h blockchain research network. the performance tests showed the system can handle 95 tps which can be enough for several scenarios. we also tested the system on a scenario and confirmed the system is useful. possible improvements for a more sustainable system are discussed on need categorization, estimate real need, regional need density analysis, warehouse assignment and prioritization, logistics acceleration, and activity report. dao will enable the coordination between ngos and make such a system sustainable as it will ensure rapid decisions on managing the resources. although the system has not yet undergone testing during an actual disaster event, ongoing communication with relevant ngos indicates plans for further community-driven development. future implementation of a dao (decentralized autonomous organization) is anticipated to enhance workforce and resource management, enabling ngos to reach a broader spectrum of individuals in need and promptly address urgent requirements. implementation of zero knowledge proof (zkp) based systems is envisioned to safeguard against unauthorized sharing of personal data, ensuring compliance with privacy regulations. in upcoming efforts, focus will be placed on dynamically establishing new nodes and automating authentication processes, with detailed updates available on the project's github repository. integration of the system with new legislative frameworks will be prioritized, alongside continued emphasis on personal data privacy through zkp algorithms. furthermore, a dataset comprising collected data from disaster areas will be analyzed, facilitating the development of a decision support system using machine learning and natural language processing (nlp). nlp will aid in matching requirement and support requests by analyzing textual data, while the integration of large language models (llm) with additional datasets and social media content, such as tweets, will further enhance system capabilities. acknowledgement: this study achieved second place in the tubi̇tak 2242 university students research project competition in the "information and communication technologies" category in türkiye in 2020. we would like to thank tubu arge company for the joint effort in testing the setup. towards decentralized resource management for disasters: ngo-rmsd 147 references [1] a. uluğ, "nasıl bir afet yönetimi [what kind of disaster management]", tmmob i̇zmir kent sempozyumu, i̇zmir, pp. 1-18, 2009. [2] m. kaya, "afet yönetiminde sivil toplum kuruluşları ve gönüllülük i̇şlevi [civil society organizations and volunteering function in disaster management]", ankara: assam, 2013. [3] birleşmiş milletler gönüllüleri, türkiye’de gönüllülük[volunteering in turkey] (çev. bordo tercüme bürosu ve e. erdem), 2011. [4] s. nakamoto, "bitcoin: a peer-to-peer electronic cash system", manubot, 2019. [5] a. baliga, i. subhod, p. kamat and s.chatterjee, "performance evaluation of the quorum blockchain platform", arxiv preprint arxiv:1809.03421, 2018. [6] d. mohanty, "r3 corda for architects and developers: with case studies in finance, insurance, healthcare, travel, telecom, and agriculture", apress, pp. 49-50, 2019. [7] afad, "genel istatistikler [general statistics]", url: https://deprem.afad.gov.tr/genelistatistikler [8] l. yaqoob, n. a. khan and f. subhan, "an overview of existing decision support systems for disasters management", sci int (lahore), vol. 26, pp. 1765-1776, 2014. [9] c. fan, c. zhang, a. yahja and a. mostafavi, "disaster city digital twin: a vision for integrating artificial and human intelligence for disaster management", international journal of information management, vol. 56, p. 102049, 2019. [10] w. al-saqaf and n. seidler. "blockchain technology for social impact: opportunities and challenges ahead", journal of cyber policy, vol. 2.3, pp. 338-354, 2017. [11] r.m. nor, m. h. rahman and a. abdullah, "blockchain sadaqa mechanism for disaster aid crowd funding", in proceedings of the 6th international conference on computing and informatics: embracing eco-friendly computing, kuala lumpur. 2017. [12] j. mcisaac, j. brulle, j. burg, g. tarnacki, c. sullivan, r. wassel, "blockchain technology for disaster and refugee relief operations", prehospital and disaster medicine, vol. 34(s1), pp. s106-s106, 2019. [13] d.a. aranda, l.m.m. fernández and v. stantchev, "integration of internet of things (iot) and blockchain to increase humanitarian aid supply chains performance", in 5th international conference on transportation information and safety (ictis), 2019. [14] r. dubey, a. gunasekaran, d. j. bryde, y. k. dwivedi and t. papadopoulos, "blockchain technology for enhancing swift-trust, collaboration and resilience within a humanitarian supply chain setting", international journal of production research, vol. 58, no. 11, pp. 3381-3398, 2020. [15] kişisel verilerin korunması kanunu [personal data protection law]. url: https://www.mevzuat.gov.tr/ mevzuatmetin/1.5.6698.pdf [16] regulation, protection. "regulation (eu) 2016/679 of the european parliament and of the council." regulation (eu) 679: 2016. [17] q. feng, d. he, s. zeadally, m. k. khan and n. kumar, "a survey on privacy protection in blockchain system", journal of network and computer applications, vol. 126, pp. 45-58, 2019. [18] e. karaarslan, e., m. birim and h. e. arı, "forming a decentralized research network: ds4h", turkish journal of electrical engineering and computer sciences, vol. 30, no. 2, pp. 436-450, 2022. [19] e. karaarslan and s. yazici yilmaz, "metaverse and decentralization", metaverse: technologies, opportunities and threats, pp. 31-44, 2023. [20] c. molina-jiménez, i. sfyrakis, l. song, h. d. a. nakib and j. crowcroft, "the benefits of deploying smart contracts on trusted third parties", arxiv preprint arxiv:2010.12981, 2020. [21] bou regional earthquake-tsunami monitoring and assessment center, "earthquake inquiry system", url: kandilli rasathanesi, http://www.koeri.boun.edu.tr/sismo/zeqdb/ [22] s. yılmaz, o. karakayali, s. yilmaz, m. çetin, s. eroglu, o. dikme, h. akoğlu, "emergency medicine association of turkey disaster committee summary of field observations of february 6th kahramanmaraş earthquakes", prehospital and disaster medicine, vol. 38, no. 3, pp. 415-418, 2023. [23] k. gökkaya, "geographic analysis of earthquake damage in turkey between 1900 and 2012", geomatics, natural hazards and risk, vol. 7:6, pp. 1948-1961, 2016. [24] r. saltini, qbft blockchain consensus protocol specification v1, enterprise ethereum alliance incorporated (eea), 2022, url: https://entethalliance.github.io/client-spec/qbft_spec.html [25] hyperledger besu, “hyperledger besu for private networks”, url: https://besu.hyperledger.org/23.4.0/ private-networks/concepts/ [26] c. fan, c. lin, h. khazaei and p. musilek, "performance analysis of hyperledger besu in private blockchain", in ieee international conference on decentralized applications and infrastructures (dapps), 2022, pp. 64-73. [27] a. özkan, c. dak, u. korkmaz, e. karaarslan, "a decentralized resource management system proposal for disasters: ngo-rmsd (stk-akys)", arxiv preprint arxiv:2204.05884, 2022. https://www.mevzuat.gov.tr/%0bmevzuatmetin/1.5.6698.pdf https://www.mevzuat.gov.tr/%0bmevzuatmetin/1.5.6698.pdf https://entethalliance.github.io/client-spec/qbft_spec.html facta universitatis series: electronics and energetics vol. 35, no 4, december 2022, pp. 495-512 https://doi.org/10.2298/fuee2204495p © 2022 by university of niš, serbia | creative commons license: cc by-nc-n original scientific paper fuzzy-based real-coded genetic algorithm for optimizing non-convex environmental economic loss dispatch shradha singh parihar1, nitin malik2 1gautam buddha university, greater noida, india 2the northcap university, gurugram, india abstract. a non-convex environmental economic loss dispatch (nceeld) is a constrained multi-objective optimization problem that has been solved for assigning generation cost to all the generators of the power network with equality and inequality constraints. the objectives considered for simultaneous optimization are emission, economic load and network loss dispatch. the valve-point loading, prohibiting operating zones and ramp rate limit issues have also been taken into consideration in the generator fuel cost. the tri-objective problem is transformed into a single objective function via the price penalty factor. the nceeld problem is simultaneously optimized using a fuzzybased real-coded genetic algorithm (ga). the proposed technique determines the best solution from a pareto optimal solution set based on the highest rank. the efficacy of the projected method has been demonstrated on the ieee 30-bus network with three and six generating units. the attained results are compared to existing results and found superior in terms of finding the best-compromise solution over other existing methods such as ga, particle swarm optimization, flower pollination algorithm, biogeography-based optimization and differential evolution. the statistical analysis has also been carried out for convex multi-objective problem. key words: multi-objective optimization, non-convex environmental economic loss dispatch, price penalty factor, pareto optimality, real-coded genetic algorithm, valve-point loading, prohibiting operating zones, ramp rate limit received march 2, 2022; revised june 22, 2022; accepted july 6, 2022 corresponding author: nitin malik the northcap university, sector 23a, gurugram, india e-mail: nitinmalik77@gmail.com 496 s. s. parihar, n. malik list of abbreviations: ceed: combined emission and economic dispatch ed: emission dispatch eld: economic load dispatch fpa: flower pollination algorithm frcga: fuzzy-based real-coded genetic algorithm ga: genetic algorithm n/w: network nceeld: non-convex environmental economic loss dispatch nsga: non-dominated sorting genetic algorithm pozs: prohibiting operating zones ppf: price penalty factor pso: particle swarm optimization rcga: real-coded genetic algorithm rrl: ramp rate limit vpl: valve point loading 1. introduction 1.1. motivation the electrical power networks traditionally functioned to minimize total generation fuel cost and were less bothered about the harmful emissions generated in the network [1-3]. after the us clean air act of 1990 (amended in 2010) and similar legislation in several other countries, the public concern towards the pollutants like cox, so2 and nox produced from the thermal power plant has grown. this, in turn, forces the utilities to deliver the power to the consumers with simultaneous minimum total generator fuel cost and total emission level [4-22]. a high degree of non-linearity and complexity is present in the modern generator’s cost curve function because of the presence of valve point loading (vpl) effect and other effects, the resultant approximate solutions lead to a lot of revenue loss over time which is also affected by the network losses. to overcome this, the optimal amount of generated power of the thermal units are to be determined by minimizing emission, loss and cost simultaneously while satisfying all practical constraints, hence, generating a large-scale highly constrained non-linear multi-objective optimization problem. 1.2. literature survey the economic load dispatch (eld) [1-3] is a real-world problem that, earlier, only considers the minimization of the generator fuel cost. therefore, emission dispatch (ed) is considered in [4] for the very first time. hence, both generator fuel cost and harmful environmental emissions should be treated as competing objectives. the combined emission and economic dispatch (ceed) minimize harmful emissions and generating unit cost simultaneously to obtain optimal generation for each network (n/w) unit satisfying various practical constraints. in [5-9], the authors presented weighted-sum or price penalty factor (ppf) based methods where all the considered objectives are treated as a unit function. conventional genetic algorithm (ga) and differential evolution have been presented in [10] and [11], respectively to demonstrate the effect of vpl on the generators cost function but fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 497 ga requires large cpu time for the optimization. a fast initialization approach has been presented in [12] to solve non-convex economic dispatch problem but is usually stuck in local minima. a new whale optimization approach has been presented in [13] and have high computational efficiency. a flower pollination algorithm (fpa) is demonstrated in [14] for solving eld and ceed problem in larger n/w. many evolutionary algorithms such as non-dominated sorting genetic algorithm (nsga) [15], squirrel search algorithm [16], evolutionary programming [17] and nsgaii [18] have been proposed for solving the bi-objective problem. the evolutionary programming has a slow convergence rate for large problem. a mine-blast algorithm has been developed in [19] to incorporate the valve point loading effect for solving the environmental economic load dispatch problem. a new global particle swarm optimization (pso) is developed in [20] to solve bi-objective problem without and with transmission losses. a fuzzified pso technique [21], harmony search [22] and cuckoo search [23] is applied to optimize the solution for the ceed problem. the pso approach deals with the problem of partial optimism. 1.3. paper contributions a) as most of the research has been carried out considering only two objectives (fuel cost and emissions), the authors have incorporated additional objective (network loss) to make the problem formulation more comprehensive and find better solution by merging two soft-computing techniques (rcga and fuzzy) for finding the best compromised solution out of the obtained pareto solutions. moreover, it has been found from the exhaustive literature review that the non-convex multi-objective optimization problem formulation with simultaneous minimization of three objective functions (emission, fuel cost and network loss) at different load demands has not been explored before. b) the different non-linearities like valve-point loading, prohibiting operating zones (pozs) and ramp rate limit (rrl) are considered in this article for three conflicting objectives. c) as all the considered objectives are competitive, the method generates multiple nondominated pareto optimal solutions rather than a single best solution from which the bestcompromised solution is selected based on the highest fuzzy membership function value. d) to validate the proposed methodology, three test cases have been considered at different load demands and the results are compared with already published methods based on ga [25], pso [25, 26], fpa [27], biogeography-based optimization [28] and differential evolution [29]. 2. mathematical modeling the practical non-convex eeld problem has three conflicting objectives which aim to minimize generating cost, amount of harmful emissions and losses of the complex and nonlinear network. to formulate a non-convex eeld problem following objectives and operating constraints are given below: 2.1. non-convex economic load dispatch it is more practical for fossil fuel-based generators to introduce the steam valve-point loading effect in a turbine by adding a rectified sinusoidal term to the quadratic cost 498 s. s. parihar, n. malik equation which leads to non-smooth and non-convex function having manifold minimas [10]. total generator fuel cost based on active power output can be represented as [14] 𝑀𝑖𝑛𝑖𝑚𝑖𝑧𝑒 𝑓1 = 𝐹𝑇 = ∑ (𝑎𝑖𝑃𝑖 2 + 𝑏𝑖𝑃𝑖 + 𝑐𝑖)𝑁 𝑖=1 + |𝑒𝑖 × sin (𝑓𝑖 × (𝑃𝑚𝑖𝑛 − 𝑃𝑖))| (1) where pi represents the output power generation of ith unit. ai, bi, ci, ei, and fi are the generator fuel cost coefficients. 2.2. emission dispatch (ed) the goal of ed is to minimize the total environmental degradation due to fossil fuel burning to produce power. the total pollution level of the environment that needs to be minimized is given as [14]: 𝑀𝑖𝑛𝑖𝑚𝑖𝑧𝑒 𝑓2 = 𝐸𝑇 = ∑ 10−2 × (𝛼𝑖 + 𝛽𝑖𝑃𝑖 + 𝛾𝑖𝑃𝑖 2)𝑁 𝑖=1 + 𝜉𝑖exp (𝜆𝑖𝑃𝑖) (2) where i, i, i, i, i represents the pollution coefficients of the ith generating unit. 2.3. loss dispatch the loss dispatch aims to minimize power loss without considering the generator cost and harmful emission of the network. to minimize loss [14] 𝑀𝑖𝑛𝑖𝑚𝑖𝑧𝑒 𝑓3 = 𝑃𝐿 = ∑ ∑ 𝑃𝑖𝐵𝑖𝑗𝑃𝑗 + ∑ 𝐵𝑖𝑜𝑃𝑖 + 𝐵𝑜𝑜 𝑁 𝑖=1 𝑁 𝑗=1 𝑁 𝑖=1 (3) where bij, bio and boo represents the line loss coefficients. 2.4. non-convex environmental economic loss dispatch (nceeld) the nceeld problem is to be formulated having an economy, harmful emissions and losses of the network as competing objectives. the proposed complex problem can be written as 𝑀𝑖𝑛𝑖𝑚𝑖𝑧𝑒 𝐶 = 𝑓1 + (𝑝𝑓𝑒) ∗ 𝑓2 + (𝑝𝑓𝑙) ∗ 𝑓3 (4) where ′𝑃𝑓𝑒′ and ′𝑃𝑓𝑙′ are the ppf for emission and loss respectively. 𝑓1 represents total generator fuel cost, 𝑓2 represents total emission and 𝑓3 represents total n/w loss. the ratio of the max value of f1 to the max value of f2 gives ppf for emission, whereas, the ratio of the max value of f1 to the max value of f3 of the corresponding generator gives ppf for loss. the procedure for finding ppf for emission and loss can be given as: (a) the generator fuel cost ($/hr) is calculated at its maximum output using (1) for the convex and non-convex problems. (b) the emission release from every generator (lb/hr or kg/hr) is calculated at its maximum output using (2). (c) the losses of each are calculated at its maximum output using (3). (d) 𝑃𝑓𝑒[𝑖], 𝑃𝑓𝑙[𝑖] (𝑖 = 1,2 . . . 𝑛) for each generator is determined as in (5) and (6). 𝑝𝑓𝑒[𝑖] = ∑ (𝑎𝑖+𝑏𝑖𝑃𝑖 𝑚𝑎𝑥 +𝑐𝑖𝑃𝑖 𝑚𝑎𝑥 2)𝑁 𝑖=1 +|𝑒𝑖×sin {𝑓𝑖×(𝑃𝑖𝑚𝑖𝑛 𝑚𝑎𝑥 −𝑃𝑖 𝑚𝑎𝑥 )}| ∑ 10−2×(𝛼𝑖+𝛽𝑖𝑃𝑖 𝑚𝑎𝑥 +𝛾𝑖𝑃𝑖 𝑚𝑎𝑥 2)𝑁 𝑖=1 +𝜉𝑖exp (𝜆𝑖𝑃𝑖 𝑚𝑎𝑥 ) ($/𝑙𝑏) (5) 𝑝𝑓𝑙[𝑖] = ∑ (𝑎𝑖+𝑏𝑖𝑃𝑖 𝑚𝑎𝑥 +𝑐𝑖𝑃𝑖 𝑚𝑎𝑥 2)𝑁 𝑖=1 +|𝑒𝑖×sin {𝑓𝑖×(𝑃𝑖𝑚𝑖𝑛 𝑚𝑎𝑥 −𝑃𝑖 𝑚𝑎𝑥 )}| ∑ ∑ 𝑃𝑖 𝑚𝑎𝑥 𝐵𝑖𝑗𝑃𝑗 𝑚𝑎𝑥 +∑ 𝐵𝑖𝑜𝑃𝑖 𝑚𝑎𝑥 +𝐵𝑜𝑜 𝑁 𝑖=1 𝑁 𝑗=1 𝑁 𝑖=1 ($/𝑝𝑢) (6) where 𝑃𝑖 𝑚𝑎𝑥 is the maximum capacity of the unit. fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 499 (e) 𝑃𝑓𝑒[𝑖] and 𝑃𝑓𝑙[𝑖] (i=1, 2... n) are sorted in ascending order. (f) 𝑃𝑖 𝑚𝑎𝑥 is added starting from the generator unit with the smallest 𝑃𝑓𝑒[𝑖] for harmful emissions and the generator unit with the smallest 𝑃𝑓𝑙[𝑖] for the loss until ∑ 𝑃𝑖 𝑚𝑎𝑥 ≥ 𝑃𝐷. (g) the 𝑃𝑓𝑒[𝑖] and 𝑃𝑓𝑙[𝑖] linked with the last generator unit is the ppf for emission and loss, respectively for a given load 𝑃𝐷. (h) the 𝑃𝑓𝑒[𝑖] and 𝑃𝑓𝑙[𝑖] for particular load are determined. eq. (4) is optimized subject to constraints in case of the tri-objective minimization problem. for the convex eed problem, the ′𝑃𝑓𝑒′ selected is 43.55981 $/kg and 44.07915 $/kg [27] for three generator unit network at 400 mw and 500 mw respectively. for nonconvex problem considering standard ieee 30-bus network, 𝑃𝑓𝑒′ and ′𝑃𝑓𝑙′ calculated for load pd of 2.834 p.u is 5932.9377 $/lb & 10445.0680 $/p.u and for load pd = 4.32 p.u is 10949.4251 $/lb & 19612.6323 $/p.u respectively using method given in reference [8]. the optimization process is subjected to the following constraints: a) the active power output of a generating unit is constrained by its bounds for a stable operation and is given as: 𝑃𝑖 𝑚𝑖𝑛 ≤ 𝑃𝑖 ≤ 𝑃𝑖 𝑚𝑎𝑥 𝑖 = 1,2, … . , 𝑁 (7) b) the total generated power balances the sum of the active power loss (pl) and total load demand (pd). therefore, ∑ 𝑃𝑖 − (𝑃𝐷 + 𝑃𝐿) = 0𝑁 𝑖=1 (8) where pl is denoted as b-coefficients. the error in loss coefficients is considered to be constant as in ref [14]. c) generator ramp rate limits: the inclusion of ramp rate limits changes the operating limits of the generator as [24] 𝑀𝑎𝑥(𝑃𝑖 𝑚𝑖𝑛 , 𝑃𝑖 𝑜 − 𝐷𝑅𝑖) ≤ 𝑃𝑖 ≤ 𝑀𝑖𝑛(𝑃𝑖 𝑚𝑎𝑥 , 𝑃𝑖 𝑜 + 𝑈𝑅𝑖) (9) where, 𝑃𝑖 𝑜 is the previous operating point of ith generator and dri & uri are the down and up ramp rate limits respectively. e) prohibited operating zones: if any power plant works in these zones, some faults might occur for the machines or accessories such as pumps or boilers. therefore, to prevent theses faults, the power generation limits must be changed so that they satisfy the poz constraint. this feature can be included in the non-convex multi-objective problem formulation as [24] min 1 1 max l i i i u l i ik i ik u izi i i p p p p p p p p p p −           (10) here zi are the number of prohibited zones in ith generator curve, k is the index of prohibited zone of ith generator, p ik l is the lower limit of kth prohibited zone, and p ik−1 u is the upper limit of kth prohibited zone of ith generator. 500 s. s. parihar, n. malik 3. solution methodology the paper implemented frcga on threeand six generator networks, to identify the best-compromised solution amongst the available set of pareto optimal solutions. the techniques used in the algorithm are as follows: 3.1. pareto optimality it is defined as the degree of efficacy in multi-objective and multi-criteria solutions and represents a condition where economic resources and its output have been assigned in such a manner that no objective can be made better without losing the well-being of the other. there is no way to improve one part of a pareto optimal solution set without making another part worse. a state u will dominate state v if u is superior to v in at least one objective function and not worse in regard to the other objective functions. a decision vector ‘u’ will dominate another vector ‘v’ (as m˂n) if 𝑓𝑗(𝑢) ≤ 𝑓𝑗(𝑣) ⩝ 𝑗 = 1,2,3, , , 𝑖 (11) and 𝑓𝑗(𝑢) ˂ 𝑓𝑗(𝑣) for at least one j (12) where j shows a total number of objectives considered for simultaneous optimization. the reduction in fuel cost of generator increases the environmental emissions and vice-versa. as the considered objectives are conflicting in nature so instead of getting an optimal solution a set of non-dominated (pareto-optimal) solutions have been obtained, hence, pareto-optimal solution has been considered. 3.2. real-coded genetic algorithm in a real-coded genetic algorithm (rcga) for optimization, the output of each generator in the system is illustrated as a floating point rather than a binary number resulting in high precision solution [30]. for discontinuous, non-differentiable and discrete objective functions the algorithm is proved to be effective and superior to binary coded genetic algorithm. the outputs of all the generating units generate a solution string known as chromosome. the initial population is randomly generated in a given search space. the rcga loop comprises pre-processing, three genetic operations and post-processing. it performs a global optimization to identify the best solution to the formulated problem and iterates until the convergence criteria is met. to estimate the fitness value for each individual to optimize nceeld problem mentioned by (4) for a given load while satisfying limits shown in (7) and (8): 𝑀𝑖𝑛 𝐶 = (𝑓1 + 𝛼[∑ 𝑃𝑖 𝑁 𝑖=1 − (𝑃𝐷 + 𝑃𝐿)])2 + ([𝑝𝑓𝑒 ∗ (𝑓2 + 𝛼[∑ 𝑃𝑖 𝑁 𝑖=1 − (𝑃𝐷 + 𝑃𝐿)]2]) + ([𝑝𝑓𝑙 ∗ (𝑓3 + 𝛼[∑ 𝑃𝑖 𝑁 𝑖=1 − (𝑃𝐷 + 𝑃𝐿)]2]) (13) where α represents the penalty parameter that occurs if n/w load demand is not satisfied. this guarantees that a feasible solution gets higher fitness as compared to an infeasible solution. fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 501 3.3. fuzzy approach based on min-max proposition to optimize three conflicting objectives (fuel cost, emission and n/w loss) simultaneously is a tedious task as there are no single criteria to finalize the merit of the available non-dominated solutions. due to the conflicting nature of the objectives, it is hard to find the best solution. every objective is assigned a degree of satisfaction based on the membership functions provided by the fuzzy method. the membership functions represent the degree of membership in fuzzy sets in the range [0,1].  (fi) is monotonically decreasing function given as [9]: min max min max max min max 1; ( ) ; 0; i i i i i i i i i i i i f f f f f f f f f f f f     − =   −    (14) where f i min represents the expected minimum value and f i max represents the expected maximum value of objective function i. the membership function value signifies how much a solution satisfies fi on a scale of 0 to 1. the fuzzy min-max proposition to nominate the best solution amongst many solutions can be given as [9] µ𝑏𝑒𝑠𝑡𝑠𝑜𝑙𝑢𝑡𝑖𝑜𝑛 = 𝑀𝑎𝑥{min [µ(𝐹𝑗)]𝑘} (15) where k is the number of pareto-optimal solutions. each objective is expected to attain higher satisfaction for each solution. the bestcompromised solution is identified based on the highest rank among k solutions. the pseudo-code to solve nceeld problem is shown below step i: initialise the cost coefficients, generator limits, load demand and the min-max values of each objective. step ii: create a random population to define the number of generators within specified limits. step iii: evaluate the fitness of the constrained tri-objective problem of the network with prohibiting operating zones and ramp rate limits. step iv: single point crossover is used for pairing and mating of the selected chromosomes. step v: mutant is created on a random basis. step vi: create new chromosomes and offspring for convergence check. step vii: select the fittest individual for the next generation. step viii: check the convergence criteria. if the maximum counter is reached, jump to step ix. else, step iv. step ix: calculate the membership value of the pareto optimal solutions using (14). the fmin and fmax value of each objective are determined by optimizing all the objectives independently to determine the endpoints of the obtained pareto front. step x: the degree of satisfaction attained for each objective is used to find the bestcompromise solution based on min-max proposition as given in (15). 502 s. s. parihar, n. malik 4. results and discussion to validate the performance, frcga has been employed to solve nceeld problem on two networks having 3 and 6 generators satisfying all the operational network constraints at various power demands. the network data for 3 and 6 generating units is given in the appendix (table 13, table 14, table 15 and table 16). a program to imitate results for both the test n/w is written on matlab 7.10. the standard ieee-30 bus network with six generator units is presented in fig.1. fig. 1 one-line diagram of 30-bus network to demonstrate the superiority of the frcga, three different test cases have been identified at different network complexity. the convergence test was carried out employing the same evaluation function for the same no. of iterations for convex case. the results for one trial of 250 iterations are shown in fig. 2, fig. 3 and fig. 4 for optimized cost, emission and loss function respectively. it can be seen that frcga converges faster for the population size of 500. fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 503 fig. 2 convergence characteristic for best fuel cost solution for different pop sizes fig. 3 convergence characteristic for best emission solution for different pop sizes fig. 4 convergence characteristic for best n/w loss solution for different pop sizes 0 50 100 150 200 250 606 608 610 612 614 616 618 620 622 no. of iteration fu e l c o st popsize=200 popsize=300 popsize=500 popsize=400 0 50 100 150 200 250 0.18 0.2 0.22 0.24 0.26 0.28 0.3 0.32 no. of iteration e m is si o n popsize=200 popsize=300 popsize=400 popsize=500 0 50 100 150 200 250 0 0.02 0.04 0.06 0.08 0.1 no. of iteration sy st e m lo ss popsize=200 popsize=300 popsize=400 popsize=500 504 s. s. parihar, n. malik hence, the optimal settings for both cases are the same, with the exception of population size and are mentioned in table 1 table 1 frcga parameters for different case studies parameters selected value population size 200 (case 1) 500 (case 2 & 3) selection rate 0.3 mutation rate 0.2 trials 60 iterations 250 4.1. environmental economic dispatch three and six generator networks have been tested without considering the effect of vpl in the network. table 2 illustrates the best cost and emission linked with the network at two different power demands of 400 mw and 500 mw. when cost minimization is performed, the generating fuel cost and n/w emissions are 20792.88 $ and 206.3426 kg, respectively, but the cost of the generator increases to 20846.60 $, and the network harmful emission reduces to 200.1578 kg in ed case at power demand of 400 mw. for 500 mw, the generator cost and n/w emissions are 25453.26 $ and 319.5089 kg when cost minimization is performed, but the cost rises to 25500.40 $ and emission reduces to 311.0776 kg. using min and max values of each objective function, the membership value of the non-dominated solutions is determined. table 2 best solution for eld and ed of 3-unit n/w at pd=400 mw and 500 mw load demand 400 mw 500 mw eld ed eld ed p1(mw) 81.4957 106.4685 103.5167 130.8372 p2(mw) 175.8190 151.1246 217.1612 190.1187 p3(mw) 149.8137 149.7724 190.9736 190.7181 fuel cost ($) 20792.88 20846.60 25453.26 25500.40 emission (kg) 206.3426 200.1578 319.5089 311.0776 loss (mw) 7.5560 7.3865 11.9239 11.6800 the simultaneous optimization of the environmental emission and the generator fuel cost is carried out to determine a best-compromise solution. in table 3 and table 4, five intermediate pareto solutions are listed from the attained pareto solution set using the presented approach with its membership values. solution 5 is selected as the best solution having the highest rank of 0.1584 and 0.1110 at 400 mw and 500 mw respectively. fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 505 table 3 pareto optimal solutions for the convex-eed problem at pd=400 mw (3-unit n/w) solution number cost ($) emission (kg) µ𝟏 µ𝟐 µ𝒎𝒊𝒏 1 20845.74 203.7849 0.0160 0.4135 0.0160 2 20843.59 200.6626 0.0560 0.9184 0.0560 3 20812.80 205.3911 0.6293 0.1539 0.1539 4 20838.31 200.3850 0.1544 0.9633 0.1544 5 20838.09 200.2123 0.1584 0.9912 0.1584 table 4 pareto optimal solutions for the convex-eed problem at pd=500 mw (3-unit n/w) solution number cost ($) emission (kg) µ𝟏 µ𝟐 µ𝒎𝒊𝒏 1 25497.79 312.3221 0.0553 0.8524 0.0553 2 25497.63 311.0877 0.0586 0.9988 0.0586 3 25497.56 312.2660 0.0602 0.8590 0.0602 4 25496.93 311.1103 0.0737 0.9961 0.0737 5 25495.17 311.1194 0.1110 0.9950 0.1110 the summarized result for a best-compromised solution for three generating unit network is tabulated in table 5 and is compared with the other methods such as ga [25], pso [25] and fpa [27]. table 5 best solution for the convex-eed problem at pd=400 mw and 500 mw (3-unit n/w) best-compromised solution 400 mw 500 mw frcga ga [25] pso [25] fpa [27] frcga ga [25] pso [25] fpa [27] p1 (mw) 102.8514 102.617 102.612 102.4468 129.3252 128.997 128.984 128.8074 p2 (mw) 154.0217 153.825 153.809 153.8341 192.4745 192.683 192.645 192.5906 p3 (mw) 150.5278 151.011 150.991 151.1321 189.8764 190.11 190.063 190.2958 fuel cost ($) 20838.09 20840.10 20838.30 20838.10 25495.17 25499.40 25495.00 25494.70 emission (kg) 200.2123 200.256 200.221 200.2238 311.1194 311.273 311.15 311.155 loss (mw) 7.4090 7.41324 7.41173 7.4126 11.6882 total cost ($) 29559.59 29563.20 29559.90 29559.81 39209.7 39220.10 39210.20 39210.15 the comparison depicts that the total generation cost incurred in solving eed problem from the frcga approach is lower than that incurred using other optimization approaches in both test cases. thus, frcga succeeds to obtain the global minimum solution and performs superior to these algorithms in respect of all parameters. the total network losses for the best-compromised solution are 7.4090 mw and 11.6882 mw for power demand of 400 mw and 500 mw, respectively. for 30-bus n/w, the best-compromised solution attained has the value of 0.1999 lb/hr and 619.90 $/hr respectively for harmful environmental emission and cost, respectively at load demand of 2.834 p.u and is in close agreement with 0.1969 lb/hr and 623.87 $/hr as mentioned in [20]. fig. 5 is the pareto front drawn between the fuel cost and the emission points which was found to have an inverse relationship between the two objectives. 506 s. s. parihar, n. malik fig. 5 pareto front between generator fuel cost ($/hr) and emission (lb/hr) for convex eed 4.2. environmental economic loss dispatch with valve-point loading the performance of the frcga on the nceeld problem is examined for the first time on the ieee 30-bus network at two different loading conditions. three objectives (fuel cost, environmental emission and losses) are simultaneously considered and optimized to obtain minimum network generation cost. the total generation cost comes out to be 1810.10 $/hr at 2.834 p.u load demand which is found to be superior to published results at 2.834 p.u. the minimum-maximum limits for fuel cost with vpl effect, harmful environmental emissions and losses for load demand of 2.834 p.u and 4.32 p.u are given in table 6. for the load of 2.834 p.u, the values attained for cost and emission is 608.02 $/hr and 0.1938 lb/hr that is found to be less when compared to 626.96 $/hr & 0.2110 lb/hr [26], 613.342 $/hr & 0.2028 lb/hr [28] and 613.338 $/hr & 0.1953 lb/hr [29], respectively. the membership values of all the pareto optimal solutions for the nceeld problem are obtained. five intermediate solutions are tabulated in table 7 and table 8 for pd=2.834 p.u and pd=4.32 p.u respectively. table 6 min-max limit for fuel cost with vpl effect, emission and loss at 2.834 p.u and 4.32 p.u load (p.u) 2.834 4.32 cost ($/hr) minimum 608.02 965.93 maximum 646.19 980.67 emission (lb/hr) minimum 0.1938 0.2263 maximum 0.2211 0.2422 loss (p.u) minimum 0.0209 0.0514 maximum 0.0379 0.0612 table 7 pareto optimal set of nceeld problem with vpl effect for load pd=2.834 p.u solution number cost ($/hr) emission (lb/hr) loss (p.u) 1 2 3 µ𝑚𝑖𝑛 1 622.74 0.1973 0.0262 0.6144 0.8704 0.6894 0.6144 2 622.62 0.2001 0.0228 0.6174 0.7697 0.8862 0.6174 3 621.53 0.2022 0.0228 0.6461 0.6911 0.8863 0.6461 4 619.84 0.2021 0.0268 0.6905 0.6961 0.6558 0.6558 5 614.99 0.2027 0.0255 0.8174 0.6742 0.7284 0.6742 615 620 625 630 635 640 645 650 0.193 0.194 0.195 0.196 0.197 0.198 0.199 0.2 0.201 cost e m is s io n fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 507 table 8 pareto optimal set of nceeld for load pd=4.32 p.u solution number cost ($/hr) emission (lb/hr) loss (p.u) total cost ($/hr) 1 2 3 µ𝒎𝒊𝒏 1 973.38 0.2326 0.0555 4490.2 0.4944 0.6013 0.5774 0.4944 2 972.85 0.2329 0.0563 4515.4 0.5301 0.5831 0.4959 0.4959 3 972.96 0.2335 0.0541 4489.12 0.5228 0.5451 0.7296 0.5228 4 972.76 0.2332 0.0545 4475.29 0.5365 0.5666 0.6788 0.5365 5 972.22 0.2335 0.0543 4497.8 0.5728 0.5480 0.7045 0.5480 the results reveal that the best-compromise solution for load demand of 2.834 p.u is 2099.20 $/hr and for load pd=4.32 p.u is found to be 4497.82 $/hr with the highest rank of 67.42% and 54.80% respectively depending upon its membership value of each objective. fig. 6 depicts the convergence criteria of 30-bus network on two different loads which reveal that the convergence of load pd= 2.834 p.u and pd= 4.32 p.u is attained faster even for the complex multi-objective minimization problem. fig. 6 convergence characteristic for total generation cost for different load conditions 4.3. environmental economic loss dispatch with valve-point loading, pozs and rrl for this test case, all the mentioned practical constraints and non-linear characteristic of non-convex multi-objective problem are considered. due to which this test case is more complex than other test cases considered above. data for the ramp rate limits and pozs has been taken from appendix (table 15 and table 17). the generator ramp rate limit needs to be satisfied as generator output cannot change (increase or decrease its output) arbitrarily to any value, the change has to within the up/down ramp rate limits. the inclusion of ramp rate limits changes the operating limits of the generator. the minimum-maximum limits of fuel cost, emission and loss evaluated for the six-unit system with pozs and rrl are given in table 9 with load demand 2.834 pu. the results presented in table 10 provides the intermediate solutions obtained using rcga. the best solution is ranked on the basis of its performance for all the objectives considered. therefore, overall rank for extreme points is zero. the rank of best solution is found to be 0.6685 which indicated that all three objectives are satisfied at least 66.85 % for load of 2.834 p.u. 0 50 100 150 200 250 0 1 2 3 4 5 6 x 10 4 iteration fit n e ss f u n ct io n load= 2.834 pu load= 4.32 pu 508 s. s. parihar, n. malik table 9 min-max limit for fuel cost with vpl effect, emission and loss with pozs and rrl at 2.834 p.u cost($/h) emission(lb/h) loss(pu) minimum maximum minimum maximum minimum maximum 611.2998 645.3562 0.1942 0.2073 0.0256 0.0358 table 10 pareto optimal set of nceeld with pozs and rrl for load pd=2.834 p.u cost ($/h) emission (lb/h) loss (pu) µ1 µ2 µ3 µ𝑚𝑖𝑛 sol.1 624.7335 0.1975 0.0257 0.6055 0.7473 0.9901 0.6055 sol.2 623.7816 0.1989 0.0242 0.6335 0.6421 1.0000 0.6335 sol.3 623.3781 0.1979 0.0291 0.6453 0.7208 0.6589 0.6453 sol.4 621.4747 0.1987 0.0283 0.7012 0.6598 0.7379 0.6598 sol.5 620.3646 0.1985 0.0256 0.7338 0.6685 1.0000 0.6685 the results clearly showed that all the constraints, such as vpl effect, pozs, rrl, generation limits and power balance constraints were fully satisfied for all considered test cases of tri-objective optimization problem. due to the non-convexity constraints introduced in test system, the cost increases from 608.0296 $/hr to 611.2998 $/hr, emission increases from 0.1938 lb/hr to 0.1942 lb/hr and system loss from 0.0209 p.u to 0.0256 p.u. 4.4. statistical analysis table 11 lists the comparison of different approaches for cost and emission minimization in terms of their minimum, maximum, mean and median values, respectively, for ieee 30bus n/w. the cost minimum (cmin), cost mean (cmean), cost median (cmedian), emission minimum (emin), emission mean (emean) and emission median (emedian) values obtained for the eld and ed problem, respectively, are found to be lowest as compared to other published work. the statistical comparison of ceed problem has also been shown in table 12 in terms of their mean and standard deviation. the values of cmean and emean obtained from solving convex ceed problem also demonstrates the superiority of the method. the value of cost standard deviation (cstd) and emission standard deviation (estd) attained from the proposed approach of frgca are 7.127 and 0.0057, respectively which is less than that obtained from other approaches. this clearly shows that the obtained results lie close to its mean value as compared to other published methods. table 11 statistical comparison of eld and ed minimization for ieee 30-bus n/w at load pd=2.834 p.u [1] fuel cost minimization cmin cmax cmean cmedian proposed approach 601.31 610.07 603.20 602.23 gqpso [31] 606.38 611.86 609.49 609.66 saiwpso [32] 605.99 606.00 605.99 605.99 ngpso [20] 605.99 605.99 605.99 605.99 [2] emission minimization emin emax emean emedian proposed approach 0.1938 0.2295 0.1941 0.1940 gqpso [31] 0.1942 0.1946 0.1944 0.1944 saiwpso [32] 0.1941 0.1941 0.1941 0.1941 ngpso [20] 0.1941 0.1941 0.1941 0.1941 fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 509 table 12 statistical comparison of ceed minimization for ieee 30-bus n/w at load pd=2.834 p.u cmean cstd emean estd proposed approach 622.62 7.127 0.2012 0.0057 gqpso [31] 644.09 12.2 0.2109 0.0095 saiwpso [32] 623.76 0.1970 ngpso [20] 623.86 0.1969 5. conclusion the fuzzy-based rcga is demonstrated to solve multi-objective environmental economic loss dispatch problem considering non-convex and non-smooth fuel cost function. the multiobjective minimization problem is transformed into the constrained single-objective problem by the use of price penalty factor which blends all competing objectives (generator cost, environmental emission and system losses). because the objectives are inversely related, a set of pareto optimal solutions are attained rather than a single optimal solution for a given objective. furthermore, a fuzzy approach is exploited to extract best-compromised solution as per the highest rank based on their membership values. the convergence of the nceeld problem at different load demand is also analyzed considering the different practical operating limits (pozs, rrl and vpl) of the network. the total generation cost of the network attained from the proposed method for different test cases has been compared to the other techniques which validate the solution to nceeld problem for small and large networks. the statistical analysis also validates the frgca approach. the percentage reduction in cstd and estd values are 41.5% and 40% as compared to ref. [31]. the proposed work can further be extended for the study of integration of renewable energy sources and for practical transmission networks considering dynamic non-convex ceeld problem. appendix table 13 generator cost, emission coefficients & generation constraints for three generating unit network cost coefficients g1 g2 g3 ai 0.03546 0.02111 0.01799 bi 38.30553 36.32782 38.27041 ci 1243.5311 1658.5696 1356.6592 emission coefficients αi 0.00683 0.00461 0.00461 βi -0.54551 -0.5116 -0.5116 𝛾i 40.2669 42.89553 42.89553 unit limits pmin (p.u) 35 130 125 pmax(p.u) 210 325 315 510 s. s. parihar, n. malik table 14 b-coefficients for three generating unit network bij * 0.0001 0.71 0.3 0.25 0.3 0.69 0.32 0.255 0.32 0.8 table 15 generator fuel cost, emission coefficients and n/w generation constraints for 30bus n/w cost coefficients g1 g2 g3 g4 g5 g6 ai 100 120 40 60 40 100 bi 200 150 180 100 180 150 ci 10 10 20 10 20 10 ei 200 200 200 200 200 200 fi 0.0050 0.0060 0.0010 0.0009 0.0009 0.0015 emission coefficients αi 4.091 2.543 4.258 5.326 4.258 6.131 βi -5.554 -6.047 -5.094 -3.550 -5.094 -5.555 𝛾i 6.490 5.638 4.586 3.380 4.586 5.151 𝜁i 0.0002 0.0005 0.00001 0.002 0.000001 0.00001 𝜆i 2.857 3.333 8.000 2.000 8.000 6.667 generator unit constraints pmin (p.u) 0.05 0.05 0.05 0.05 0.05 0.05 pmax (p.u) 0.5 0.6 1.0 1.2 1.00 0.60 ramp rate limits dri(up)/h 0.08 0.11 0.15 0.18 0.15 0.18 dri(dn)/h 0.08 0.11 0.15 0.18 0.15 0.18 table 16 b-coefficients for six generating unit network bij 0.1382 -0.0299 0.0044 -0.0022 -0.0010 -0.0008 -0.0299 0.0487 -0.0025 0.0004 0.0016 0.0041 0.0044 -0.0025 0.0182 -0.0070 -0.0066 -0.0066 -0.0022 0.0004 -0.0070 0.0137 0.0050 0.0033 -0.0010 0.0016 -0.0066 0.0050 0.0109 0.0005 -0.0008 0.0041 0.0066 0.0033 0.0005 0.0244 bo -0.0107 0.0060 -0.0017 0.0009 0.0002 0.0030 boo 0.00098573 table 17 pozs of units for ieee-30 bus n/w unit 1 2 5 poz [0.10 0.15] [0.25 0.30] [0.50 0.55] references [1] j. c. dodu, p. martin, a. merlin and j. pouget, "an optimal formulation and solution of short-range operating problems for a power system with flow constraints", proc. ieee, vol. 60, no. 1, pp. 54-63, 1972. [2] m. modiri-delshad, s. h. a. kaboli, e. taslimi-renani and n. a. rahim, "backtracking search algorithm for solving economic dispatch problems with valve-point effects and multiple fuel options", energy, vol. 116, pp. 637-649, 2016. [3] m. pradhan, p. k. roy and t. pal, "grey wolf optimization applied to economic load dispatch problems", int. j. electr. power energy syst., vol. 83, pp. 325-334, 2016. [4] m. r. gent and w. l. john, "minimum-emission dispatch", ieee trans. power syst., vol. 90, pp. 2650–2660, 1971. fuzzy-based real-code genetic algo for optimizing non-convex environment economic loss dispatch 511 [5] k. t. chaturvedi, m. pandit and l. srivastava, "modified neo-fuzzy neuron-based approach for economic & environmental optimal dispatch", appl. soft comput., vol. 8, no. 4, pp. 1428-1438, 2008. [6] s. zaoui and a. belmadani, "solution of combined economic and emission dispatch problems of power systems without penalty", appl. artif. intell., p. 1976092, 2021. [7] a. chatterjee, s. p. ghoshal and v. mukherjee, "solution of combined economic and emission dispatch problems of power system by an opposition-based harmony search algorithm", int. j. electr. power energy syst., vol. 39, no. 1, pp. 9-20, 2012. [8] c. palanichamy and k. srikrishna, "economic thermal power dispatch with emission constraint", j. institution of eng., vol. 72, pp. 11-18, 1991. [9] s. s. parihar and n. malik, "multi-objective optimization with non-convex cost functions using fuzzy mechanism based continuous genetic algorithm", in proceedings of the ieee 4th international conference on electrical, computer and electronics, 2017, pp. 457-462. [10] d. c. walters and g. b. sheble, "genetic algorithm solution of economic dispatch with valve point loading", ieee trans. power syst., vol. 8, no. 3, pp. 1325-1332, 1993. [11] d. zou, s. li, g. g. wang, z. li and h. ouyang, "an improved differential evolution algorithm for the economic load dispatch problems with or without valve-point effects", appl. energy, vol. 181, pp. 375-390, 2016. [12] w. t. el-sayed, e. f. el-saadany, h. h. zeineldin and a. s. al-sumaiti, "fast initialization methods for the nonconvex economic dispatch problem", energy, vol. 201, p. 117635, june 2020. [13] s. m. abd elazim and e. s. ali, "optimal network restructure via improved whale optimization approach", int. j. commun., vol. 34, no. 1, e. 4617, 2021. [14] a. y. abdelaziz, e. s. ali and s. m. abd elazim, "flower pollination algorithm to solve combined economic and emission dispatch problems", eng. sci. technol. int. j., vol. 19, no. 2, pp. 980-990, 2016. [15] m. a. abido, "a novel multi-objective evolutionary algorithm for environmental/economic power dispatch", int. j. electr. power system res., vol. 65, no. 1, pp. 71–91, 2003. [16] v. p. sakthivel, m. suman and p. d. sathya, "combined economic and emission power dispatch problems through multi-objective squirrel search algorithm", appl. soft comput., vol. 100, p. 106950, march 2021. [17] n. sinha, r. chakrabarti and p. k. chattopadhyay, "evolutionary programming techniques for economic load dispatch", ieee trans. evol. comput., vol. 7, no. 1, pp. 83-94, 2003. [18] m. basu, "dynamic economic emission dispatch using nondominated sorting genetic algorithm – ii", int. j. electr. power energy syst., vol. 30, no. 2, pp. 140-149, 2008. [19] e. s. ali and s. m. abd elazim, "mine blast algorithm for environmental economic load dispatch with valve loading effect", neural comput. appl., vol. 30, pp. 261-270, 2018. [20] d. zou, s. li, z. li and x. kong, "a new global particle swarm optimization for the economic emission dispatch with or without transmission losses", energy convers. manag., vol. 139, pp. 45-70, 2017. [21] l. wang and c. singh, "environmental / economic power dispatch using fuzzified multi-objective particle swarm optimization algorithm", int. j. electr. power syst. res., vol. 77, no. 12, pp. 1654-1664, 2007. [22] s. sivasubramani and k. s. swarup, "environmental/economic dispatch using multi-objective harmony search algorithm", electr. power syst. res., vol. 81, no. 9, pp. 1778-1785, 2011. [23] l. benyekhlef, s. abdelkader, b. houari and a. a. n. el-islam, "cuckoo search algorithm to solve the problem of economic emission dispatch with the incorporation of facts devices under the valve-point loading effect", fu: elec. energ., vol. 34, no. 10, pp. 569-588, 2021. [24] q. quande, c. shi, c. xianghua, l. xiujuan and s. yuhui, "solving non-convex/non-smooth economic load dispatch problems 2 via an enhanced particle swarm optimization", appl. soft comput., vol. 59, pp. 1-24, 2017. [25] a. l. devi and o. v. krishna, "combined economic and emission dispatch using evolutionary algorithms – a case study", arpn j. eng. appl. sci., vol. 3, no. 6, pp. 28-35, 2008. [26] s. hemamalini and s. p. simon, "emission constrained economic dispatch with valve point effect using particle swarm optimization", in proceedings of the ieee region 10 conference (tencon), 2008, vol. 1, pp. 1-6. [27] a. y. abdelaziz, e. s. ali and s. m. abd elazim, "combined economic and emission dispatch solution using flower pollination algorithm", int. j. electr. power energy syst., vol. 80, pp. 264-274, 2016. [28] a. bhattacharya and p. k. chattopadhyay, "application of biogeography-based optimization for solving multi-objective economic emission load dispatch problem", electr. power compon. syst., vol. 38, no. 3, pp. 826-850, 2010. [29] a. bhattacharya and p. k. chattopadhyay, "solving economic emission load dispatch problems using hybrid differential evolution", appl. soft comput., vol. 11, no. 2, pp. 2526-2537, 2011. [30] r. l. haupt and s. e. haupt, practical genetic algorithm, 2004. (book) https://www.sciencedirect.com/journal/engineering-science-and-technology-an-international-journal/vol/19/issue/2 512 s. s. parihar, n. malik [31] s. agrawal, b. k. panigrahi and m. k. tiwari, "multiobjective particle swarm algorithm with fuzzy clustering for electrical power dispatch", ieee trans. evol. comput., vol. 12, no. 5, pp. 529-541, 2008. [32] m. a. c. silva, c. e. klein, v. c. mariani and l. s. coelho, "multiobjective scatter search approach with new combination scheme applied to solve environmental/economic dispatch problem", energy, vol. 53, no. 5, pp. 14-21, 2013. 13015 facta universitatis series: electronics and energetics vol. 38, no 2, june 2025, pp. 263 275 https://doi.org/10.2298/fuee2502263h © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design and simulation of an efficient solar cell with sb2se3 and cdte as double absorber layers atefeh halashi1, ali naderi2 1electrical engineering department, energy faculty, kermanshah university of technology, kermanshah, iran 2electrical engineering department, engineering faculty, imam khomeini international university, qazvin, iran orcid ids: atefeh halashi n/a ali naderi https://orcid.org/0000-0001-9891-9805 abstract. the present study proposes a solar cell using double absorber layers of sb2se3 and cdte. the design aim is to obtain high efficiency while maintaining or improving other main characteristics of solar cell. the proposed sb2se3/cdte/cds/zno/sno2 solar cell include additional sb2se3 layer compared with its conventional counterpart while their total thickness is equal. the scaps simulator software has been applied to investigate the device performance. firstly, the impacts of applying two absorber layers on the cell's performance and their thickness ratio were studied. then, the effect of limitations such as band gap energy and the impurity concentration of the sb2se3 layer, the work function of the back contact metal, and the operating temperature on the cell performance were investigated. for thickness of 1.3 µm of sb2se3 layer and 0.7 µm of cdte layer, the efficiency of 32.40% was obtained. the short circuit current density is jsc=34.55 ma/cm2, the open circuit voltage voc = 1.06 v, and the fill factor is ff = 86.06%. the obtained efficiency is about 5% higher than the structure where only the layer of cdte is applied as the absorber. also, the use of te which is a limited supply material in environment is reduced in proposed structure. simulation results demonstrate that a solar cell with higher efficiency and more compatible with environment can be achieved using the proposed two absorber layer. key words: solar cell, double absorber layers, sb2se3 layer, efficiency, fill factor 1. introduction in the last few decades, the research community witnessed the noteworthy advancement in the field of solar photovoltaic technology (pv). many groups of solar cells including copper indium gallium selenide (cigs), perovskite cells, cadmium telluride (cdte), silicon, and cells based on semiconductor compound iii and v have been considered to make more received september 17, 2024; revised november 10, 2024; accepted november 15, 2024 corresponding author: ali naderi electrical engineering department, engineering faculty, imam khomeini international university, qazvin, iran. e-mail: a.naderi@eng.ikiu.ac.ir https://orcid.org/0000-0001-9891-9805 264 a. halashi, a. naderi competent cells. the thin film cdte and cigs based cells as 2nd generation of solar cells present a proper coefficient of absorption in the visible range of spectrum. sb2se3 (antimony selenide) is also an appropriate absorber material in photovoltaic applications. its band gap is direct in the variety of 1.2-1.9 and 1-1/5 ev, related to the deposition methods and operating circumstances. however, there are few reports on applying sb2se3 as the bsf (back surface field) layer, in case of heavy doping of 1020 cm-3 [1]. silicon-based solar cells are efficient cells whose manufacturing techniques are complex and expensive. reasonable cost third-generation thin-layer solar cells have been evaluated as a potential substitute to monocrystalline silicon (si) counterparts. the thin layer cells based on a-si (amorphous silicon), cigs, and cdte, have been studied as fruitful structures. the cdte technology is cheaper than others, 30 percent and 40 percent cheaper than cigs and a-si technology, respectively. thus, the cdte based cells show higher ratio of efficiency/cost. the polymer and perovskite-based cells have attracted the attention of researcher in recent years. the problem is that these solar cells are unstable, which limits their long-term applications [2]. on the other hand, it is not yet considered for large-scale application because compounds such as lead (pb) are harmful to human health and biological life. thin-layer photovoltaics have received more attention. it is due to the use of fewer materials, processing methods with low-temperature, variability of deposition procedures, well-matched with lowcost platforms, and low manufacturing expenses. thin layer cells based on copper indium diselenide, cdte, and cigs have now reached the commercialization step. but, factors such as the limited supply of te and in due to scarcity, the cd toxicity, and expensive price of ga have made worries about the restrictions in pv manufacturing volume. additional absorber substances in thin film cells have been considered, such as sns (tin sulphide), fes2 (iron sulfide), cu2o (copper oxide), cu2s (copper sulfide). however, the conversion efficiency obtained from these materials is still much lower than expected. among all adsorbents, sb2se3 is a single-phase, stable, and binary chalcogenide compound [3,4]. cdte thin-film structures have proven to be competent and gainful in generating solar electricity. they are competitor for cigs and si wafers in the commercial photovoltaic market. significant study consideration has been dedicated to growing the conversion efficiency of these cells, so that has touched 22%. the cdte efficiency does not depreciate at high temperatures due to its proper stability both chemically and thermally. on the other hand, cdte has high chemical and thermal stability, which is caused by the large binding energy between te and cd (5.75ev). this is far larger than any energy of photons in the solar spectrum. consequently, cell destruction and the existence of toxic cadmium is not a severe problem in environmental claims. a method to reduce the contest of te deficiency is to decrease the cdte thickness, where the normal cdte thickness is presently about 5 µm. by reducing the thickness, not having significantly reduction in its proficiency, the amount of materials and its cost will also be reduced [5]. in this work, the thickness of the cdte is considered to be very thin, which leads to less consumption of te, and because of the less use of toxic cd, it is better compatible with the environment. to compensate for the decrease in solar cell efficiency caused by the decrease in the thickness of absorber, another material has been used as the second absorber layer. cdte is one of group ii and vi combined polycrystalline semiconductors, with about 1.5ev direct band gap beside considerable absorption coefficient (1×105 cm-1). in recent years, the application of cdte in the field of thin film solar cells with high efficiency has been significantly developed. related to long-standing stability, inexpensive design and simulation of an efficient solar cell with sb2se3 and cdte as... 265 manufacturing of solar cells, and capability of absorbing wavelengths between 350 and 850nm, their production seems promising [6]. researchers have formerly confirmed efficiency of 18.7% in polycrystalline thin-film cdte cells. it achieved by means of higher deposition temperatures, back-contact te layers, and anti-reflective coating [7]. the recombination at the back contact interface can be reduced by using a back contact field layer in cdte cells, leading to improved open circuit voltage (voc). by using a nio layer in the back contact, di xiao and colleagues succeeded in making a cdte-based structure with 12.17% efficiency and voc of 790mv [8]. moreover, in 2021, rahmand and colleagues planned a cdte-based solar cell in which antimony sulfide was used for the first time as the htl (hole transport layer) at the back surface field [9]. they reached an efficiency of 28.41%. the sb2se3 with hole mobility up to 42 cm2v-1s-1, as a semiconductor is p-type with an orthogonal crystal structure. its absorption coefficient is high. in addition, se and sb are relatively abundant, inexpensive, and less toxic. in 2018, researchers used vapor transfer deposition (vtd) method to sb2se3 film deposition laterally in the orientation of 221 type to increase the efficiency equal to 7.6%. li and colleagues, in 2019 also employed the closespacing sublimation method to effectively raise sb2se3 nanorod arrays with 001orientation on a mo electrode [10]. they obtained the maximum yield about 9.2% to date. the voc and short circuit current density (jsc) of sb2se3 solar cells are far from ideal, in spite of such quick advance. to extra progress in the performance of the device, many limitations require to be examined, which leads to a huge burden on experimental study [10]. this study has theoretically investigated the effect of applying two absorber layers of sb2se3 and cdte, as well as the role of changed limitations on solar cell outputs. to evaluate the output of the proposed cell, scaps simulator has been used. scaps is able to obtain the outputs of the related semiconductor equations; poisson and carriers continuity equations. scaps calculates the answer of the straightforward semiconductor equations in one-dimensional and stable circumstances [11]. fig. 1 representation the construction of (a) the basic and (b) the proposed sb2se3 / cdte solar cells 2. simulation of projected solar cell 2.1. cell construction figure (1) presents the schematic construction of a cdte-based and the proposed cell with two absorber layers. sb2se3 and cdte are the absorber layers. the thickness of absorber layer is more than the other layers, so it allows more sunlight to be absorbed in 266 a. halashi, a. naderi this layer [12]. cds, which has a high absorption coefficient, appropriate ohmic contact, and low resistance, has been used in the buffer layer. sno2 is chosen as tco (transparent conductive oxide) and zno as high resistivity transparent (hrt) layer. also, platinum is applied as the back contact metal. it should be mentioned that the thickness for sb2se3 and cdte of proposed cell mentioned in figure is selected such that the cell characteristics obtain the proper values where it will be discussed in other sections. table 1 input parameters of scaps 1-d to simulate the device performance sb2se3 cdte cds zno sno2 parameters 3.9 3.9 4.0 4.0 4.0 electron affinity (ev) 15 320 100 25 100 mobility of electron (cm2/vs) 5.1 40 25 25 25 mobility of hole (cm2/vs) 1 107 1 107 1 107 1 107 1 107 electron thermal velocity (cm/s) 1.3 0.7 0.06 0.05 0.05 thickness (µm) 1.8 1019 1.8 1019 1.8 1019 2.4 1018 1.8 1019 vb effective density of states (cm-3) 2.2 1018 8 1017 2.2 1018 1.8 1019 2.2 1018 cb effective density of states (cm-3) 1 107 1 107 1 107 1 107 1 107 hole thermal velocity (cm/s) 1 1018 1 1014 0 0 0 acceptor density na (cm-3) 0 0 1 1018 1 1019 1 1017 donor density (cm-3) 1.33 1.5 2.4 3.37 3.6 bandgap (ev) 18 9.4 10 9 9 dielectric permittivity neutral donor neutral donor defect type 1 1012 1 1013 1 1014 1 1015 nt total (cm-1) 0.6 0.75 0.6 1.8 energy level related to a reference (ev) single gaussian single gaussian energetic distribution above ev midgap above ev midgap reference for defect energy level et 10-15 10-15 10-15 10-15 holes capture cross-section (cm2) 10-15 10-12 10-15 10-12 electron capture cross-section (cm2) 2.2. parameters of simulation the characteristics of the proposed sb2se3/cdte/cds/zno/sno2 cell have been extracted from the [13, 14, 15, 16] references, and they are outlined in table (1). the defect energy distribution of cdte and sno2 is gaussian with a characteristic energy of 0.1ev [13]. also, the defect of the interface is also collected from reference [1] and summarized in table (2). table 2 interface defect characteristics parameter cds/cdte interface sb2se3 cdte interf defect type neutral neural total density (cm-2) 1.0 1014 1.0 1014 the energy related to reference (ev) 0.25 0.25 reference for defect energy level et above highest ev above highest ev holes/electrons capture cross section (cm2) 1 10-19 1 10-19 design and simulation of an efficient solar cell with sb2se3 and cdte as... 267 3. discussion and results the current work aimed to design a solar cell with high efficiency and simultaneously more compatibility with the environment. here, a 2 µm thickness cdte-based solar cell was first simulated as the only absorber layer. then, the cdte thickness has been decreased. it is more economical since it applies less te that is less abundant, and more compatible with the environment due to the less usage of the toxic cd. however, by reducing the thickness of the cdte layer, the efficiency experiences a reduction, as depicted in figure 2. it should be mentioned that between 1 µm and 2 µm, the efficiency experiences small changes (about 1%). here the thickness of basic structure is selected to be 2 µm but one can choose a thickness between 1 µm and 2 µm without losing considerable efficiency. in figure 2, the solar cell includes only one absorber layer. in next simulations, the second absorber layer is inserted but the total thickness of absorber layers (cdte/sb2se3) is 2µm. to evaluate the effect of using two absorber layers, firstly, the total 2µm thickness is devoted to cd and then the effects of reducing the cdte thickness and increasing sb2se3 have been investigated. fig. 2 influence of reducing the cdte absorber thickness on efficiency fig. 3 the consequence of reducing the cdte layer thickness and using two absorber layers on the qe of the structure. by increasing the sb2se3 thickness, the qe increases 268 a. halashi, a. naderi figure 3, presents the cell quantum efficiency (qe). the decrease in efficiency is due to the decrease in qe for the wavelengths greater than 500 nm. for one absorber layer the qe is zero for wavelength greater than 850 nm. by adding second absorber layer, which is placed at the front of the cell, the decrease in solar cell efficiency is compensated. sb2se3 has well abundance and less toxicity, and depending on the deposition methods, can have a direct band gap in the variety of 1-1.5 ev, and considering that its energy is less than cdte in this range, this material is chosen to be the second absorber layer. the effect of its application on quantum efficiency is revealed in figure 3. as it is given in the figure, if cdte is used as the only absorber layer, the quantum efficiency will be zero for the photons with a wavelength longer than 850nm. by applying sb2se3 as the second absorber layer, the cell would be able to absorb photons with longer than 850nm wavelength, and due to absorbing more photons, the cell's efficiency improves. it was observed from figure 3 that by applying two absorber layers with different band gap energy, the cell absorbs more extensive solar energy, which increases the cell's efficiency. in subsequent, the effects of thickness ratio of the absorber layers, the sb2se3 band gap energy, temperature, etc., on the characteristics of the structure including voc, jsc, ff, and efficiency (η) are examined. the efficiency and ff of the solar cell can be calculated by means of the bellow relations [17], where pin is input power, vm and im are maximum values of voltage and current, respectively. 2 . . , ( 1000 )sc oc in in i v ff w p p m  = = (1) m m sc oc i v ff i v  =  (2) 3.1. examination of the thickness ratio of the sb2se3 and cdte and the effect of using two different absorber layers the absorber thickness is a significant restriction that affects the capabilities of the solar cell. a thick layer permits further photons to be absorbed, thus producing further electron-hole pairs and improving proficiency. because of weak optical absorption, a thin absorber layer reduces the optical current, thus the efficiency. in another word, if the absorber layer is too thick, it will lead to a longer transmission path of the optically produced carriers; thus, the recombination increases. also, there is an optimal thickness for the absorber layer beyond which the output parameters do not improve significantly. in this work, the thickness ratio of the two absorber layers has been changed. table 3 displays the thickness ratio of the two absorbers, and figure 4 presents the output characteristics of the solar cell concerning these thicknesses. table 3 several thickness ratio of cdte and sb2se3 absorber layers a7 a6 a5 a4 a3 a2 a1 structure 1/1.9 0.5/1.5 0.7/1.3 1/ 1.3/0.7 1.7/0.3 2/0 cdte/sb2se3 thickness (µm) as seen in figure 4, η, jsc, and ff are greater when the absorber layer is composed of two different types of material than the state where it is only constituted of one type of material. therefore, the efficiency can be improved by applying double absorber layers, design and simulation of an efficient solar cell with sb2se3 and cdte as... 269 which is due to the absorption of a wider range of solar energy. consequently, ff will also be improved according to the relation (2). according to figure 4, the utmost voc corresponds to (a1) that only the cdte absorber layer has been used, and it caused by the decrease in the back surface field recombination. yet, the short circuit current in this state is less than in the other states. in the case of the thickness ratio of 0.7/1.3 of the cdte/sb2se3 absorber, the efficiency of the solar cell has amplified by 5% related to the first state where only one layer with the thickness equal to 2 µm was applied as the absorber. considering that the reduction of the thickness of cadmium telluride leads to an increase in its deficiency, and on the other hand, according to figure 4, the variations in the efficiency is less for the thicknesses less than 0.7 µm, this ratio of thickness has been considered for the absorber layer. afterward, for this thickness ratio of the absorber layers, the influence of other parameters on the cell's capability was surveyed. fig. 4 influence of absorber layers thicknesses on the characteristics of the solar cell 3.2. effect of band gap energy of sb2se3 layer depending on the deposition methods, sb2se3 has a direct band gap among 1-1.5 and 1.2-1.9 electron volts. figure (5) shows the effect of band gap energy in this range. as the band gap energy of sb2se3 increased, the short-circuit current decreased, as a result of the decrease in photon absorption at longer wavelengths eg ˃ eph. the voc is also first enlarged and then fixed. by change in bandgap, the variation in voc is in inverse direction of isc. the voc increases with bandgap. but for bandgaps larger than 0.4 ev, 270 a. halashi, a. naderi due to the increase in recombination, its increase is stopped and approximately is fixed. as the energy gap increases, ff and output efficiency firstly increase and then decrease. maximum efficiency is achieved in eg=1.33ev (32.40%). in fact, the combined effects have led to an increase in pm in eg=1.33 ev, where the increase in voc has covered the decrease in jsc . 3.3. the effect of sb2se3 impurity concentration (na) na plays an important role on cell efficiency. in figure 6, na changes in the range of 1013-1018 cm-3. it can be seen that the increase of na has led to the improvement of ff and thus the efficiency. the higher efficiency is obtained at higher sb2se3 concentration. minority carriers life time is proportional to the added impurity. the higher na, the longer life time, which means collecting more photons at absorber layer and increase in efficiency and ff. fig. 5 the influence of band gap energy on , , ff and ɳ 3.4. the temperature effects the temperature affects the band gap of semiconductors. the band gap energy of a semiconductor decreases with growing the temperature. for temperatures more than 300k, the band gap changes can be studied according to the following equation: design and simulation of an efficient solar cell with sb2se3 and cdte as... 271 2 ( ) (0)g g t e t e t   = − + (3) in which temperature is t, eg(t) is the semiconductor band gap, and eg(0) is its value in t=0k, α and β are the connection parameters [18]. figure 7 shows influence of increasing temperature on cell performance which are the direct results of reduced bandgap energy by temperature. due to the importance of temperature effects on cell performance, its dependency is investigated in figure 7. by increase in temperature, the velocity of carriers increases. it means higher recombination rate and reduced efficiency. fig. 6 impurity concentration effects on output parameters of the cell 3.5. effect of metal work function of back contact choosing the proper metal is essential to achieve maximum efficiency. figure 8 shows the effect of the work function of the metal on the output characteristics of the structure. in this study, different materials such as pt, au, ni, mo, ag, zn, cu, and al have been used. as can be seen, with the growth in the metal work function, the efficiency rises, which indicates the decrease in the height of the barrier with the growth in the work function of the metal. the efficiency for work function more than 5.65ev is fixed. 272 a. halashi, a. naderi fig. 7 characteristics of the sb2se3/cdte solar cell versus the operating temperature fig. 8 result of metal work function change on , ff, , and ɳ design and simulation of an efficient solar cell with sb2se3 and cdte as... 273 3.6. energy band diagram, qe and current-voltage curve figure 9a illustrates energy band diagram of sno2:f/zno/cds/cdte/sb2se3/pt structure, and 9b and 9c show qe and (j-v) curves for different band gap energy values of sb2se3 in this cell. the performance characteristics are compared with the experimentally and numerically characteristics in the other works for the cdte based solar cells as presented in table 4. based on table 4, compared to other structures, the proposed structure includes less use of a limited source material (te). also, its voc, isc, ff, and efficiency show that by using two absorber layers, an efficient and more compatible with environment solar cell can be achieved. fig. 9 (a) energy band diagram of sno2:f/zno/cds/cdte/sb2se3/pt structure. (b) and (c) qe and j-v curves for different band gap energy values of sb2se3 table 4 device characteristics of the proposed structure in comparison with the reported cd cells. 274 a. halashi, a. naderi structure experime ntal/ sim ulation thickness of absorber layer (μm) voc (v) jsc (ma/cm2) ff (%) ɳ (%) ref. fto/cds/cdte/bcs/ito exp 3 0.823 21.2 70.4 12.3 [19] sno2:f/cds//cdte/cd1-xmgxte/cu/te /au exp 3 1.01446 24.32 75.96 17.53 [13] sno2:f/mzo/cds:o/cdte/mo/al/cr exp 3-5 0.8625 26.8 78.2 18.05 [20] sno2 /cdse/cdte/al sim 4 0.870 24.32 76.19 16.13 [21] au/znte:cu/cdte/cd1-xznxs/ito sim 2.5 1.1 27.18 66.65 19.93 [22] znte/zns/cdte/si sim 2.5 1.01 29.32 72.06 21.38 [23] ito/tio2/cds/cdte/mos2/au sim 3 1.141 27.69 83.80 26.49 [24] tio2/cds/cdte/cuo/pt sim 3 1.107 28.48 89.10 28.11 [25] cdte/cisse/si/cds/zno sim 3 0.8136 41.1436 79.36 27.38 [26] cuscn/cdte/cds/zno:al sim 4 1.03 27.4 80.17 22.62 [27] fto/mzo/cdte/te:cu sim 2.5 0.92 26.15 87.03 21.04 [28] sno2:f/zno/cds/cdte/ sb2se3/pt sim 2 1.06 34.55 86.06 32.40 this work 4. conclusion in this work, a solar cell based on cdte has been designed and simulated. firstly, the absorber layer thickness has been decreased, which led to a decrease in the cell efficiency. this drop in performance was compensated by applying the second absorber layer and designing a solar cell composed of two absorber layers. the performance of the cell with two absorber layers had a significant improvement compared to the structure composed of one layer with the same thickness. the effect of thickness ratio, energy gap, impurity density, operating function of the back contact metal, and the operating temperature on the output parameters of the structure have been investigated. the simulation outputs confirmed a higher efficient and more environmentally compatible solar cell using two absorber layers. the efficiency of 32.40% for the thickness of 1.3 μm of sb2se3 layer and 0.7 μm of cdte layer, at the temperature of 300k was obtained. it shows 5% improvement compared to the structure with only the cdte absorber with same absorber thickness. references [1] a. kuddus, a. b. m. ismail and j. hossain, "design of a highly efficient cdte-based dualheterojunction solar cell with 44% predicted efficiency", sol. energy, vol. 221, pp 488-501, 2021. [2] s. ahmmed, et al., "a numerical simulation of high efficiency cds/cdte based solar cell using nio htl and zno tco", optik, vol. 223, pp. 165625, 2020. [3] f. baig, et al., "a baseline for the numerical study of sb2se3 absorber material based solar cell", j. nanoelectron. optoelectron., vol. 14, pp. 72-79, 2019. [4] a. hajjiah, a. hajiah, m. hossain and n. gorji, "modeling the impact of grain size on device characteristics of sb2se3 solar cells", mater. sci. eng., b, vol. 303, pp. 117319, 2024. [5] o. g. rashwan and l. ji, "optical modeling of periodic nanostructures in ultra-thin cdte solar cells with an electron reflector layer", superlattices microstruct., vol. 149, p. 106757, 2021. [6] i. tinedert, et al., "design and simulation of a high efficiency cds/cdte solar cell", optik, vol. 208, p. 164112, 2020. [7] a. h. munshi, et al., "polycrystalline cdsete/cdte absorber cells with 28 ma/cm 2 short-circuit current", ieee j. photovoltaics, vol. 8, pp. 310-314, 2017. design and simulation of an efficient solar cell with sb2se3 and cdte as... 275 [8] d. xiao, et al., "cdte thin film solar cell with nio as a back contact buffer layer", sol. energy mater. sol. cells, vol. 169, pp. 61-67, 2017. [9] s. rahman and s. r. a. ahmed, "photovoltaic performance enhancement in cdte thin-film heterojunction solar cell with sb2s3 as hole transport layer", sol. energy, vol. 230, pp. 605-617, 2021. [10] z. q. li, m. ni and x.-d. feng, "simulation of the sb2se3 solar cell with a hole transport layer", mater. res. express, vol. 7, p. 016416, 2020. [11] m. mostefaoui, et al., "simulation of high efficiency cigs solar cells with scaps-1d software", energy procedia, vol. 74, pp. 736-744, 2015. [12] a. kumar, et al., "increased efficiency of 23% for cigs solar cell by using ito as front contact", mater. today: proc., vol.28, pp. 361-365, 2020. [13] y. feng, et al., "coevaporated cd1-xmgxte thin films for cdte solar cells", renew. energy, vol. 145, pp. 13-20, 2020. [14] m. el-mrabet, a. tarbi, m. hachimi, h. erguig and t. chtouki, "an optimized design to boost efficiency of cdte-based solar cell using scaps simulator", j. phys. chem. solids, p. 112287, 2024. [15] k. maurya and v. singh, "sb2se3/czts dual absorber layer based solar cell with 36.32% efficiency: a numerical simulation", j. sci.: adv. mater. devices, vol. 7, p. 100445, 2022. [16] h. ameer, et.al., "a role of back contact and temperature on the parameters of cdte solar cell", adv. mater. process. technol., vol. 10, pp. 497-505, 2024. [17] s. abasian and r. sabbaghi-nadooshan, "study of hole-blocking and electron-blocking layers in a inas/gaas multiple quantum-well solar cell", fu: elec. energ., vol. 33, no. 3, pp. 477-487, 2020. [18] s. bagheri, et al., "design and simulation of a high efficiency ingap/gaas multi junction solar cell with algaas tunnel junction", optik, vol. 199, p. 163315, 2019. [19] k. k. subedi, et al., "bifacial cds/cdte solar cell using transparent barium copper sulfide as a hole transport layer", in proceedings of the 2019 ieee 46th photovoltaic specialists conference (pvsc), 2019, pp. 0185-0188. [20] a. hu, "high-efficiency cdte-based thin-film solar cells with unltrathin cds: o window layer and processes with post annealing", sol. energy, vol. 214, pp. 319-325, 2021. [21] h. rosly, et al., "high efficiency cdte thin film solar cells with cdse as a prospective window layer from numerical optimization", test eng. manag., pp. 5647-5653, 2019. [22] n. das, et al., "effect of cd 1− x zn x s window layer incorporation in cdte solar cell by numerical simulation", in proceedings of the 2019 international conference on electrical, computer and communication engineering (ecce), 2019, pp. 1-5. [23] s. al ahmed, j. ferdous and m.s. mian, "development of a novel cdte/zns/znte heterojunction thin-film solar cells: a numerical approach", iop sci. notes, vol. 1, p. 024802, 2020. [24] n. singh, a. agarwal and t. kanumuri, "effect of mos2 as a buffer layer on cdte photovoltaic cell through numerical simulation", j. eng. research emsme special issue, vol. 89, p. 98, 2021. [25] a. roy and a. majumdar, "optimization of cuo/cdte/cds/tio2 solar cell efficiency: a numerical simulation modeling", optik, vol. 251, p. 168456, 2022. [26] n. a. jahan, s. i. parash, a. hossain and t. chowdhury, "mathematical modeling of various cdte/cisse based hetero-structure photovoltaic cells incorporating si and cds: using scaps 1d simulator", chalcogenide lett., vol. 21, no. 8, pp. 675-686, 2024. [27] i. montoya de los santos, et. al, "towards a cdte solar cell efficiency promotion: the role of zno: al and cuscn nanolayers", nanomater., vol. 13, no. 8, p. 1335, 2023. [28] m. harif, et. al., "effect of cu2te back surface interfacial layer on cadmium telluride thin film solar cell performance from numerical analysis", crystals, vol. 13, no. 5, p. 848, 2023. facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 439-448 https://doi.org/10.2298/fuee1903439v © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd a brief overview of stochastic instruments for measuring flows of electrical power and energy  vladimir vujicic 1 , dragan pejic 2 , aleksandar radonjic 3 1 vladimir vujicic entrepreneur consultant in electrical engineering and energetics, novi sad, serbia 2 faculty of technical sciences, novi sad, serbia 3 institute of technical sciences of the serbian academy of sciences and arts, belgrade, serbia abstract. this paper gives a brief overview of three instruments suitable for measuring the flow of electrical power and energy. the first instrument is a single-phase power analyzer, while the other two instruments are double and quadruple three-phase power analyzers. in addition to overviewing these instruments, the paper presents a possible improvement of a quadruple three-phase power analyzer. the implementation of this improvement would make it possible to use a quadruple three-phase power analyzer as support for the phasor measurement unit. key words: electrical power, electrical energy, power grid network, stochastic instruments, measurement accuracy, phasor measurement unit. 1. introduction electrical energy is the most common and widely used type of energy in the world. it can be easily converted to other forms of energy, such as heat, light, or mechanical power. in industry, electrical energy is usually calculated indirectly: as the product of electrical power and time. in contrast to it, electrical power is calculated directly: as the product of voltage and current. the precise measurement of all these quantities is a necessary precondition for the proper operation of technological equipment. their values give us all the necessary information about the technological process. in the offline mode, this information can be used to analyze and improve the process from the economic point of view. in contrast, in the online mode, the obtained information is used as input data for various scada systems. in this way, it is possible to perform real-time control of very complex technological processes. received october 25, 2018; received in revised form april 23, 2019 corresponding author: aleksandar radonjic institute of technical sciences of the serbian academy of sciences and arts, knez-mihailova 35/iv, 11000 belgrade, serbia (e-mail: sasa_radonjic@yahoo.com)  440 v. vujicic, d. pejic, a. radonjic in the last 20 years a large number of methods for measuring electrical power and energy have been developed. they are practically implemented in three types of devices: 1) instruments for measuring the quality of electrical energy, 2) power analyzers, and 3) smart meters. besides having different roles, these devices have different prices: the instruments for measuring the quality of electrical energy are, respectively, one and two orders of magnitude more expensive than power analyzers and smart meters. 2. the vmp20 instrument the vmp20 instrument is a single-phase power analyzer (fig. 1). it was designed back in 1996 by the authors and their colleagues. this device, based on national patent [1], is able to measure (at two second time intervals) four quantities: 1) single phase voltage (with the accuracy of 0.5 % of full scale), 2) single phase current (with the accuracy of 0.5 % of full scale), 3) single phase active power (with the accuracy of 1 % of full scale), 4) the grid frequency (with the accuracy of 0.02 % of full scale). fig. 1 the vmp20 instrument. the instrument is connected to a pc via rs232 interface. the software installed on a supporting pc (vmpcalc 2.1) is intended for additional processing of measured data (fig. 2). this includes: a) the calculation of the reactive and apparent power, b) the calculation of the impedance, c) the calculation of the minimum and maximum values of all measured quantities, d) the calculation of the mean value and standard deviation of all measured quantities, e) the calculation of the peak power (maximum 15-minute average power), f) the calculation of the maximum 15-minute average current value, g) the calculation of the maximum 15-minute average reactive and apparent power, h) the generation of the reports for a given time interval, i) the graphical representation and visualization of the measured/calculated quantities. based on the aforementioned, the authors have successfully tested the ability of the vmp20-based system (vmp20 instrument + pc + vmpcalc 2.1 software) to detect various disturbances in a low voltage distribution network (lvdn) [2]. some examples are illustrated in figs. 3 and 4. a brief overview of stochastic instruments for measuring flows of electrical power and energy 441 fig. 2 the basic window of vmpcalc 2.1. fig. 3 continual measurement of the phase voltage using the vmp20 instrument. fig. 4 continual measurement of the grid frequency using the vmp20 instrument. 442 v. vujicic, d. pejic, a. radonjic 3. the mm2/mm4 instrument as a result of an intensive research, in the early 2010's, the authors and their colleagues have designed two new instruments: a double three-phase power analyzer, called mm2, and a quadruple three-phase power analyzer, called mm4 (fig. 5). fig. 5 the mm2 instrument (left) and mm4 instrument (right). both devices are based on national patents [1] and [3] and use a two-bit sddft processor [4] to process some measured data. owing to this, one mm4 device can measure up to 70 quantities: 1) 3 voltage rms (with the accuracy of 0.2 % of full scale) [5], 2) 16 current rms (with the accuracy of 0.2 % of full scale) [5], 3) 12 active powers (with the accuracy of 0.5 % of full scale) [5], 4) 38 fundamental fourier coefficients (with the accuracy of 0.2 % of full scale) [6], 5) power grid frequency (with the accuracy of 0.02 % of full scale) [7]. unlike the vmp20, the mm4 is connected to a pc via the usb cable. the software installed on a pc (vmpcalc 3.0) performs three-phase processing and has the ability to calculate fryze's reactive power (rp) in the three phases and the fundamental of budeanu's rp in the three phases (based on the measured values of fundamental fourier coefficients). the authors have successfully tested the ability of the mm-based system (mm2/mm4 instrument + pc + vmpcalc 3.0 software) to detect, locate and measure unregistered electricity consumption. one such test was performed five years ago for the needs of the serbian national power distribution company’s branch (formerly called “elektrovojvodina”). in the mentioned case, along with the company's system (system1), the additional mm4based system (system2) was installed as a redundant system. the key hardware elements of this system (two mm2/mm4 instruments and one pc) were placed in the substation and connected at the output of distribution transformer (fig. 6). on the other hand, on each distant pole one energy power meter (labeled as br on fig. 6) was placed and connected. thanks to such approach, it was possible to measure electricity consumption independently of the company's system. by comparing the measurement results of both system1 and system2, it was possible to detect and locate unregistered electricity consumption. in this particular case, we have found a huge disproportion between recorded and actual consumption (especially on the 4 th pole) (fig. 7). a brief overview of stochastic instruments for measuring flows of electrical power and energy 443 fig. 6 a schematic diagram of the system2. fig. 7 the 96-hour measurement results obtained using the system1 (green line) and system2 (red line). 444 v. vujicic, d. pejic, a. radonjic 4. further improvement of the mm4 instrument among all of the above mentioned instruments, the most advanced is the mm4. it performs measurements in both the time domain (the measurement of the rms value of the voltage/current and the measurement of the active power) (fig. 8) and the fourier domain (the measurement of fourier coefficients of the input voltage/current) (fig .9). from figs. 8 and 9 it can be seen that the a/d conversion and mac operations (mac multiply and accumulate) are extremely simple. the instrument is, therefore, simple and reliable, and it has a small number of systematic errors that can be easily identified and eliminated [8]. fig. 8 two-bit mac scheme in time domain. fig. 9 two-bit mac scheme in transformation domain. the first scheme is intended for measurement of the mean value of a product of two analog signals f1(t) and f2(t) (e.g. voltage and current). for that purpose, it is needed to add two uncorrelated dithers h1 and h2 (fig. 8). in that case, the output value will be equal to 1 2 1 2 1 0 1 1 ( ) ( ) ( ) ( ) tn i i i f t f t dt n t           (1) where t denotes the measurement interval length. the second scheme (fig. 9), on the other hand, is intended for measuring the harmonic components (fourier coefficients aj and bj) of the input signal f1(t). as it can be seen, the analog sum of the signals f2(t) and h2 is replaced by memorized two-bit samples of a dithered base function (dbf). for instance, if f2(t) = r2·cos(jωt), the output value  will be equal to a brief overview of stochastic instruments for measuring flows of electrical power and energy 445 2 1 2 1 2 1 0 1 1 ( ) ( ) ( ) cos ( ) 2 2 tn j j i ar i i f t r j t dt a n t                (2) where r2 = 1 represents the dbf range, while ω denotes the fundamental frequency. analogously, if f2(t) = r2·sin (jωt) , the output value  will be equal to sin 2 2 2 1 2 1 2 1 0 1 1 ( ) ( ) ( ) ( ) tn i r i i f t r j t dt n t                j j b b (3) in [4], it was shown that the mm4 measures all parameters necessary for calculation of the electrical power (according to the ieee std. 1459-2010). the whole process of signal processing is performed by two fpga chips, which were made nine years ago. thanks to the great advancement of fpga technology [12], the performance of the mm4 instrument can be greatly improved. one such improvement would make it possible to use the mm4 as support for the phasor measurement unit (pmu). for instance, in [11] it was formulated and solved the problem of measuring the current power value by using four digitized samples of the voltage and current taken in the sliding half-cycle of grid frequency. the authors of [11] have shown that, for this purpose, one needs to know the values of both the fundamental and the largest odd higher harmonic. one solution to this problem is the application of four stochastic digital dft (sddft) processors (figs. 10 and 11). one sddft (fig. 10) is intended to calculate the fourier coefficients within one voltage cycle (20 ms). however, by using four sddft processors, which are successively "phase-shifted" by π/2 (fig. 11), it is possible to measure the fourier coefficients within the sliding quarter-cycle of the voltage signal (fig. 12). fig. 10 optimal two-bit sddft processor for measuring 2m fourier coefficients. 446 v. vujicic, d. pejic, a. radonjic fig. 11 optimal two-bit sddft processor for measuring i-th fourier coefficient within the sliding quarter-cycle of the voltage signal. fig. 12 optimal two-bit quadruple sddft processor for measuring 2k+1 odd fourier coefficients within the sliding quarter-cycle of the grid frequency. a brief overview of stochastic instruments for measuring flows of electrical power and energy 447 unlike the mm4, which is synchronized with the grid frequency, that varies [3], the pmu is synchronized with astronomical time that does not vary [10]. as a result, the output data from the mm4 (one quadruple sddft processor) may delay up to two sampling periods of the pmu, i.e. 5 ms. by embedding two quadruple sddft processors inside the mm4, the mentioned delay can be reduced up to half sampling period of the pmu, i.e. 1.25 ms. a special problem is the determination of the largest odd higher harmonic. it needs to be solved within a few microseconds, which is a topic beyond the scope of this paper. 5. discussion the instruments described in the previous sections enable control and monitoring the flow of electrical power and energy in a lvdn. the number of the users of electrical energy can be practically arbitrary: from several tens to several thousands. an additional advantage is the fact that mm2 and mm4 instruments are based on fpga technology. therefore, they can be improved without new hardware design. some improvements in that sense were presented in [4] and [8]. the first reference describes the improvement in terms of accuracy, while the second one shows how to determine the consumer's profile (capacitive, inductive, thermogenic or mixed) and its behavior. all these features were obtained by reprogramming fpga chips. besides this, practical experience has shown that a pc is the most sensitive component of the system. thus, in [9] it was suggested its replacement with a beaglebone device [10]. on the other hand, by replacing existing fpga chips with more advanced ones, it is possible to measure the fourier coefficients within the sliding half-cycle of the grid frequency. consequently, it is also possible to measure the current electrical power within the sliding half-cycle of the grid frequency. it is interesting to note that for this need it is necessary to embed at least three additional sddft processors, while the rest of the instrument remains unchanged. 6. conclusion in this paper, we gave an overview of three instruments that have been constructed by the authors and their colleagues. compared to corresponding commercial solutions, they provide a magnitude of order cheaper and not less reliable control of the flow of electrical power and energy. because of their significantly lower price, they can also be used as redundant systems along to scada systems. one example of such system is described in this paper. finally, the paper presents the proposal for a significant improvement of the mm4 instrument. it is based on embedding three additional sddft processors that are successively "phase-shifted" by π/2. this improvement is a necessary precondition for solving a significant problem in practice: determining the fundamental and largest odd higher harmonic in the power grid, which enables the calculation of the current power value. acknowledgement: this work was supported by the serbian ministry of education and science under grant tr 32019. 448 v. vujicic, d. pejic, a. radonjic references [1] v. vujicic and s. milovancev, “digitalni instrument za merenje proizvoda dva analogna periodična signala“, yu patent p-742/95, 1995 (in serbian). [2] v. vujicic et al., “concept of stochastic measurements in the fourier domain”, in proceedings of the ieee 16th international conference on harmonics and quality of power, may 2014, pp. 288-292. [3] v. vujicic, “digitalni instrument za merenje harmonika“, yu patent p-628/96, 1998 (in serbian). [4] d. pejic et al., “stochastic digital dft processor and its application to measurement of reactive power and energy”, measurement, vol. 124, pp. 494-504, aug. 2018. [5] v. vujicic et al., “low frequency stochastic true rms instrument,” ieee trans. instrum. meas., vol. 48, no. 2, pp. 467-470, apr. 1999. [6] p. sovilj et al., “stochastic measurement of reactive power using a two-bit a/d converter", in proceedings of the imeko tc-4 int. symp. on understanding the world through electrical and electronic measurement, sept. 2016, pp. 176-179. [7] a. radonjic, p. sovilj and v. vujicic, “stochastic measurement of power grid frequency using a twobit a/d converter,” ieee trans. instrum. meas., vol. 63, no. 1, pp. 56-62, jan. 2014. [8] m. urekar et al., “accuracy improvement of the stochastic digital electrical energy meter,” measurement, vol. 98, pp. 139-150, feb. 2017. [9] d. davidovic et al., „optimalni redundantni merni sistem za nadzor tokova električne snage i energije“, in proceedings of the energetika 2017, zlatibor, mar. 2017 (in serbian). [10] https://beagleboard.org/bone [11] a. ghanavati, h. lev-ari and a. stankovic, “a sub-cycle approach to dynamic phasors with application to dynamic power quality metrics,” ieee trans. power delivery, vol. 33, no. 5, pp. 22172225, oct. 2018. [12] https://indico.cern.ch/event/283113/contributions/1632265/attachments/522019/720041/zibell_how_fp gas_work.pdf https://scholar.google.com/scholar?cluster=6392327388801746347&hl=en&newwindow=1&as_sdt=2005&sciodt=0,5 https://scholar.google.com/scholar?cluster=6392327388801746347&hl=en&newwindow=1&as_sdt=2005&sciodt=0,5 https://beagleboard.org/bone https://ieeexplore.ieee.org/author/38314883800 https://ieeexplore.ieee.org/author/38314883800 https://indico.cern.ch/event/283113/contributions/1632265/attachments/522019/720041/zibell_how_fpgas_work.pdf https://indico.cern.ch/event/283113/contributions/1632265/attachments/522019/720041/zibell_how_fpgas_work.pdf instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 345 381 doi: 10.2298/fuee1503345j rf mems/nems resonators for wireless communication systems and adsorptiondesorption phase noise  ivana jokić 1,2 , miloš frantlović 1,2 , zoran djurić 3 , miroslav l. dukić 4 1 school of electrical engineering, university of belgrade, bulevar kralja aleksandra 83, 11000 belgrade, serbia 2 institute of chemistry, technology and metallurgy center of microelectronic technologies, university of belgrade, njegoševa 12, 11000 belgrade, serbia 3 serbian academy of sciences and arts, institute of technical sciences sasa, knez mihailova 35, 11000 belgrade, serbia 4 singidunum university, danijelova 29, 11000 belgrade, serbia abstract. during the past two decades a considerable effort has been made to develop radio-frequency (rf) resonators which are fabricated using the micro/nanoelectromechanical systems (mems/nems) technologies, in order to replace conventional large off-chip components in wireless transceivers and other high-speed electronic systems. the first part of the paper presents an overview of rf mems and nems resonators, including those based on two-dimensional crystals (e.g. graphene). the frequency tuning in mems/nems resonators is then analyzed. improvements that would be necessary in order for mems/nems resonators to meet the requirements of wireless systems are also discussed. the analysis of noise of rf mems/nems resonators and oscillators is especially important in modern wireless communication systems due to increasingly stringent requirements regarding the acceptable noise level in every next generation. the second part of the paper presents the analysis of adsorption-desorption (ad) noise in rf mems/nems resonators, which becomes pronounced with the decrease of components' dimensions, and is not sufficiently elaborated in the existing literature about such components. finally, a theoretical model of phase noise in rf mems/nems oscillators will be presented, with a special emphasize on the influence of the resonator ad noise on the oscillator phase noise. key words: mems resonator, nems resonator, tunable resonator, graphene resonator, adsorption-desorption noise, oscillator phase noise received march 2, 2015 corresponding author: zoran djurić serbian academy of sciences and arts, institute of technical sciences sasa, knez mihailova 35, 11000 belgrade, serbia (e-mail: zoran.djuric@itn.sanu.ac.rs) 346 i. jokić, m. frantlović, z. djurić, m. l. dukić 1. introduction over the past two decades, wireless communications have been a subject of intensive development, and tremendous growth has taken place in this area of technology and industry. modern wireless terminals have become universal mobile personal devices which unite the functions of a telephone, a computer with internet access, a radio navigational device, a multimedia center etc., and in every new generation operate in a greater number of frequency ranges (multiband operation) and according to a greater number of communication standards (multistandard operation). this course of development poses new challenges related to the design of these devices' transceivers. having in mind the requirements for a small size, low power consumption and low cost of mobile terminals, it is apparent that the multiband multistandard front end, i.e. the transceiver part in which the processing of high frequency signals is performed, is the most critical. in transceivers operating at frequencies around 1 ghz and higher, which is common in modern mobile personal devices, it is still not technologically possible to ensure entirely software-based adaptation to an arbitrary communication standard. the processing of signals at those frequencies (filtering, amplification, frequency conversion) is performed by analog circuits, and it often requires the implementation of off-chip (discrete) passive components and several separate integrated circuits (ic), because the performance of the corresponding integrated components and circuits implemented in cmos technology are not satisfactory. bearing in mind the trend towards an increasing number of frequency bands in which a mobile terminal is used, the current approach towards designing multiband multistandard transceivers, which implies the introduction of an additional set of rf analog circuits and off-chip passive components for each new band and wireless standard, is becoming inefficient because it leads to an unacceptable increase in complexity, power consumption, size and price. particularly critical is the increase in the number of off-chip passive rf components. in the next generation of mobile terminals, the reconfigurability of the rf part of transceivers should be achieved by using as small a number of components as possible, with the simultaneous increase in the integration level: by replacing the discrete passive components (such as rf filters, duplexers, switches, impedance matching circuits, resonators in frequency references and frequency synthesizers, etc.) with integrated ones, by introducing components with tunable parameters instead of a number of discrete ones with fixed parameters; the most desirable solution implies the application of integrated tunable (reconfigurable) passive components. however, in this regard, the possibilities of conventional technologies are limited. the requirements for the reconfigurability of the rf front-end, better rf performance and a higher level of integration of the rf segment of the transceiver in future systems generate the need for high-quality passive rf components, applicable in a wide frequency range, as well as for those with tunable parameters, which will be integrated in cmos circuits. nowadays, mems and nems technologies are considered to have the potential for the realization of rf components which are able to meet the mentioned requirements. rf mems/nems resonators are being developed with the intention to replace large off-chip components, such as rf filters and quartz resonators, in wireless transceivers [14]. in the first part of this paper we present a short overview of rf mems resonators, including their classifications, principle of operation, their main characteristics relevant for wireless transceiver applications and advantages compared to solutions based on rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 347 conventional technologies. the achieved values of basic parameters will be given through examples of rf mems resonators reported in the literature. the capability of rf mems and nems resonators to meet future needs will also be considered, including the possibility of frequency tuning in mems and nems mechanical resonators. resonators based on two-dimensional (2d) crystals (such as graphene) will also be included in the analysis. the comment will be given on the necessary improvements and the direction of future research in this field, with the intention to optimize rf mems and nems components according to requirements of both current and future systems, especially having in mind the need for nems resonators. the analysis of noise generation mechanisms which are specific for these components is of particular significance in this respect: it leads to optimal resonator's design and operating conditions, which ensure minimal noise and, accordingly, minimization of signal degradation. in the second part of the paper we will present the analysis of adsorption-desorption (ad) noise in rf mems and nems electromechanical resonators, which becomes pronounced with components' decreasing dimensions and mass. finally, we present a theoretical model of phase noise in oscillators using rf mems/nems resonators as frequency determining elements, considering the influence of the resonator ad noise. 2. rf mems and nems resonators radio-frequency mems and nems technologies are intended for the realization of mems and nems passive components variable capacitors, inductors, resonators, switches, which may be basic elements of more complex functional blocks such as tunable filters, impedance-matching networks, phase shifters, reference oscillators, frequency synthesizers, antenna switches etc, all of them operating at radio frequencies to mm-wave frequencies (i.e. up to the order of 10 ghz and above). the development of rf mems components began at the end of 1980s. high rf performance (even of tunable components), dimensions at the micrometer scale, the technological compatibility with cmos and other ic technologies which enable their integration with active electronics, low power consumption, and mass production, make them promising candidates for application in wireless transceivers. integrated rf mems components can directly replace off-chip traditional components (rf filters and crystal oscillator references, as well as other passives and rf switches) in conventional transceiver architectures, as shown in fig. 1a. furthermore, tunable rf mems components can be used to ensure front-end reconfigurability in multiband multistandard transceivers, significantly reducing its complexity, as shown in fig. 1b. 2.1. rf mems resonators – a short overview of existing components and future needs resonator is a basic element of oscillators and frequency selective circuits. the applications of resonators in wireless transceivers are numerous. they include rf filters and duplexers, tunable tanks of voltage controlled oscillators (vcos), frequency references, frequency synthesizers, clock generators. the basic parameters of resonators are the resonance frequency, f0, and the quality factor, q, while other important parameters are frequency stability (in time – e.g. long/short-term; with temperature; with pressure etc.), power handling capability and series resistance. the value of the product f0·q is often 348 i. jokić, m. frantlović, z. djurić, m. l. dukić used as an indicator of the performance of the resonator. the required values of the resonator parameters depend on its application. for example, resonance frequencies of resonators used in various stable frequency references (for the operation of cellular modules, gps modules, microprocessors, real-time clocks etc.) and filters with different central frequencies in wireless transceivers cover a wide range (f0 are of the order of 1 khz – 1 ghz). the quality factor of a vcos resonant tank in a superheterodyne receiver can be 30–50, but q of rf bandpass filters, with the central frequencies in the range 0.8– 5.5 ghz, must be much greater (q~500–10000). the highest q (typically greater than 10 5 , even 10 6 ) is required in frequency references (oscillators). the temperature frequency stability of frequency references in mobile terminals should be better than ±10 ppm in the range 0–70 ºc [2]. the maximal acceptable resonator frequency variation for frequency synthesis is ±2 ppm in the same temperature range. in rf preselect filters and imagerejection filters the maximum temperature coefficient of frequency can be ~10 ppm/ºc. the resonator long-term frequency stability better than 3 ppm/year is needed [4]. the resistance should be low enough to allow impedance matching to conventional rf circuits (typically 50 ω). fig. 1 simplified block-diagram of a hypothetical multiband multistandard wireless transceiver rf front end, illustrating applications of rf mems components (shown in color/gray): a) direct replacement of non-integrated conventional components with integrated mems components, b) significantly simplified rf front end as a result of the application of tunable mems components. resonators can generally be divided into electromagnetic and electromechanical. in modern wireless transceivers, electromagnetic resonators are lc circuits, while electromechanical ones include saw (surface acoustic wave) and baw (bulk acoustic wave) resonators. saw and baw resonators (which also include quartz resonators) are off-chip components, and have better performance than electromagnetic ones, especially than integrated ones. saw resonators are used in high-performance rf filters and duplexers, with central frequencies up to 2 ghz. the nominal frequencies of crystal resonators are of the order of 10 khz–10 mhz. with the increase in the resonance frequency rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 349 of quartz resonators, the value of the q factor decreases. the best quartz resonators (whose production is complex and expensive) with a frequency of 10 mhz have q=10 6 . the series resistance of quartz resonators is 50 , whereas the frequency stability, at best 1 ppm, in the temperature range of 100c may be achieved by choosing the optimum oscillating mode and crystal cut. conventional resonators are highly reliable and technologically mature, but none of the mentioned resonator types can simultaneously meet the following requirements: resonance frequencies in ghz-range, high q at ghzfrequencies, tunability, low power consumption, high frequency stability, small dimensions, low cost and integration (especially monolithic) with cmos circuits. therefore, they are an obstacle for full integration and miniaturization of ghz multiband multistandard wireless transceivers. during the past two decades a considerable effort has been made in the development of rf mems resonators in order for them to be used in wireless transceivers instead of conventional bulky off-chip resonators [1-4]. both electromagnetic and electromechanical resonators have been fabricated using the mems technology. as far as mems resonators of these two types with equal resonance frequency are concerned, mems electromechanical resonators are smaller and have a higher quality factor than electromagnetic ones. in the following text we will present electromechanical (em) rf mems resonators in greater detail. some of the main advantages that mems technologies bring into the field of em resonators include small dimensions, high both f0 and f0·q product (f0 up to the order of 1 ghz, q comparable to conventional), low power consumption, the possibility of lowcost mass production and integration (monolithic or hybrid) with cmos ics. an especially attractive feature of mems resonators is the tunability of their parameters. em resonators consist of the resonant mechanical structure and the input and output electromechanical transducer. the operation of em resonators is based on mechanical oscillations of a resonant structure, which are actuated by the input electrical signal and converted in the output electrical signal. an input em transducer converts electrical energy into mechanical energy (i.e. electric voltage into force or mechanical stress), whereas an output transducer converts mechanical energy into electrical energy (i.e. displacement or deformation of the resonant structure into an output electrical signal). the actuation is usually achieved through the action of electrostatic (es) or magnetic force, or it is based on a piezoelectric (pe) effect or on thermally induced expansion. the mechanism of conversion of mechanical energy into an electrical signal can be capacitive, piezoelectric, piezoresistive, etc. the most common are the combination of es (capacitive) actuation and capacitive detection of mechanical oscillations and the combination of pe actuation and detection. electromechanical transducers are characterized by the coefficient of electromechanical coupling, which is a measure of the efficiency of energy conversion between electrical and mechanical domains of a resonator. it depends on the shape and dimensions of the resonant structure, material parameters, mode of oscillation, the transduction mechanism, the transducer's parameters, as well as the position and size of electrodes, and it significantly influences the parameters of the resonator (e.g. the equivalent series resistance) [3]. the capacitive actuation and detection of mechanical oscillation of the resonant structure are achieved as shown in fig. 2a. dc voltage vp is applied to the resonant structure, whereas alternating driving voltage vi is applied to the input electrode. these 350 i. jokić, m. frantlović, z. djurić, m. l. dukić two voltages together generate time-variable electric force acting on the resonant structure and exciting its mechanical resonant oscillation if the frequency of the excitation electrical signal is equal to the mechanical resonance frequency of the structure (which depends on the geometrical parameters of the resonant structure and parameters of the materials from which it is made). during the resonant oscillation of the structure, the distance between the structure and the output electrode changes in time. consequently, the corresponding capacitance and the output current also change, this change being directly proportional to the instantaneous value of the oscillation amplitude and bias voltage vp. accordingly, the output current is generated only if vp≠0, and the capacitive resonators are switched on and off by a simple mechanism (by turning the polarization voltage on and off). in order to achieve low power consumption and integrability with the integrated circuits, the value of vp should be low enough. therefore, the distance g between the electrodes of capacitive transducers and the resonant structure should be less than 1 μm. a smaller electrode gap and a greater surface area of electrodes ensure a greater em coupling coefficient. the coupling coefficient in es transduction depends on the bias voltage (it is directly proportional). fig. 2 schematic representation of mems resonators, illustrating their basic electromechanical configuration and principle of operation: a) a resonator with capacitive actuation and detection of mechanical oscillation, b) with piezoelectric (pe) actuation and detection of bulk acoustic waves, c) with pe actuation and detection of surface acoustic waves. the resonant structure of capacitive resonators can be in the shape of a cantilever, clamped-clamped or free-free beam, membrane, disk, quadratic plate, ring or comb. they are usually made of silicon, but silicon carbide, silicon nitride, diamond, germanium, silicon germanium, gallium arsenide, nickel, etc. can also be used. the most common configurations of electrodes are parallel plates, and interdigitated (comb) electrodes. a conducting material or a dielectric covered with a thin conductive layer can be used to manufacture electrodes. electrodes are placed in such a way to maximize coupling into a desired mode of vibration. capacitive resonators oscillate in flexural or torsional modes, but there are also capacitive resonators with bulk oscillation modes: extensional longitudinal, extensional contour (i.e. radial for disk resonators), wine-glass and lamé. the piezoelectric mechanism of excitation and detection of mechanical waves is based on the use of piezoelectric materials which are prone to mechanical deformation in the presence of an electric field (inverse pe effect), while the induced mechanical deformation of the material generates a voltage at the output port (pe effect). the main functional rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 351 components of the resonator are a layer of a pe material (e.g. aln, zno, lead zirconate titanate (pzt)), reflector structures (surfaces) and the electrodes to which the driving electric signal is applied, or which are used to detect the generated voltage (figs. 2b and 2c). metal electrodes are placed directly on the pe layer. pe layer is usually in the form of a square, rectangular or circular plate but they may also have a form of a circular or square ring. driving electrical signal excites acoustic waves in pe material, and the reflector surfaces confine the generated acoustic waves. this enables the acoustic resonance to be established, when the frequency of the excitation electrical signal is equal to the mechanical resonance frequency determined by the geometry of the system and the parameters of the material. there are several types of pe rf mems resonators, but they can generally be divided into saw and baw resonators. in a saw resonator, input and output interdigitated electrodes and reflectors are placed on the same surface of the pe layer. in baw resonators, a thin layer of a pe material is placed between the electrodes. in saw and baw resonators, mechanical waves are formed on the surface and within the volume of the thin layer of a pe material, respectively. saw resonators usually oscillate in the rayleigh mode. the most common oscillating modes in baw resonators are the bulk extensional mode in the direction of piezolayer thickness, i.e. the direction of the excitation electrical field (such as in fbars – thin film bulk acoustic resonators), or the lateral extensional mode (in lbars – lateral bars). the resonance frequency of fbar depends on the thickness of the pe layer. the fbar resonance in the range of lower ghz frequencies is formed in the layers of the pe material reaching about 1 μm in thickness, whereas the lateral dimension of the resonator are of the order of 10-100 μm. the lateral extension modes may be along one direction or a contour, whereas the resonance frequency is determined by the lateral dimensions (e.g. the width of the ring acting as the resonant structure). the lateral bulk modes can also be formed in hybrid saw-baw structures, in which the direction of the excitation electric field belongs to the lateral plane (lfer – lateral field-excited resonator). the interdigitated electrodes of these resonators are located on a single surface of the pe layer (just like in a saw resonator), bulk standing acoustic waves are formed (as in baw resonators), whereas the resonance frequency is determined by the distance between two adjacent "fingers" of interdigital electrodes (the lateral dimension, as in saw resonators). less commonly, pe actuation is used to excite the flexural modes of oscillation of suspended resonant structures comprising a layer(s) of pe material [5]. in the piezoelectric mechanism of energy conversion, the coefficient of em coupling is larger than in the capacitive mechanism, for resonators of similar shape and size. it is greater in fbar resonators than in lbars. aln resonators have a slightly smaller coupling coefficient than zno and pzt components, but their piezoelectric properties are excellent and they are suitable for high-frequency applications [6]. the mechanical resonant frequency of the structure is determined by its stiffness and mass, i.e. by its geometry, dimensions and material parameters. the q factor of the resonator (unloaded q) is by definition equal to the ratio of the energy stored in the resonator and the energy lost per one cycle of oscillation. a high resonator q results in low resonator impedance (i.e. series resistance). the fulfillment of requirements to be met by an oscillator in terms of phase noise and frequency stability, as well as the filter insertion loss and selectivity, power dissipation, etc. also depend on the q value. the value of q is determined by different mechanisms of energy loss, both internal and 352 i. jokić, m. frantlović, z. djurić, m. l. dukić external. external loss mechanisms may include the loss of mechanical energy in places where the resonant structure is fixed during oscillation, or they can be a result of the presence of the surrounding medium (e.g. air or other gas mixtures) or external circuits. as for internal mechanisms, mechanical energy is dissipated in the resonator or on the surface of the resonant structure as a result of the presence of the bulk and surface defects, and thermoelastic effects that lead to the irreversible transformation of acoustic energy into heat [3]. with the increase of gas pressure in the surrounding medium inside the resonator cavity, the energy loss due to the gas damping can grow and prevail over losses caused by other mechanisms. therefore, it is usually necessary to ensure that resonators operate in a vacuum packaging. the value of the pressure at which q begins to decrease due to gas damping with further increase in pressure depends on the resonance frequency and dimensions of the resonant structure. this pressure value is lower in resonators of smaller dimensions (at the same f0), as well as in resonators of lower f0. the energy loss due to other mechanisms can be minimized by optimizing the design of the resonator (choice of material, shape, size and place where the resonant structure is fixed, choice of mode of oscillation, etc.). for example, q increases with a decreased resonator surface-tovolume ratio. bulk mode resonators have a greater q than flexural, whereas si bulk resonators have greater q than aln bulk resonators. thermoelastic losses set the upper fundamental thermodynamic limit of the resonator quality factor, and also of the f0q product in resonators whose resonant frequency is lower than 1 ghz [7]. the value of q increases with decreasing temperature. the resonance frequency of fbar resonators is typically in the range between 400 mhz and 10 ghz, and their q factor is usually 1000-3000. the relatively low values of the q of aln-based resonators are a consequence of material losses, which are specifically related to metal electrodes that are placed directly on the pe material. as far as the value of the product f0q (on the scale of 10 12 ) is concerned, lbars in the form of an aln ring with a lateral contour mode and lfe (saw-baw) resonators [8-10] have a prominent place among pe resonators. for example, the q factor of saw-baw mems resonators with the resonance frequency of 843 mhz – 1.64 ghz, manufactured using the cmos-compatible process, is up to 2200 in air [8]. the second lateral resonator [11], monolithically integrated with cmos circuits, has f0=1.01 ghz, and q around 7000 in air. capacitive transduction influences the mechanical resonance frequency of a resonator through the effect of spring constant softening [12-14]. namely, in capacitive mems resonators, along with the mechanical component, the effective stiffness has an electrical component (which depends on the dc-bias voltage, resonator-to-electrode gap spacing, g, the electrode overlap area, ae, and the permittivity of the dielectric which fills the gap, εd). that is why the overall resonance frequency is different from the mechanical resonance frequency and is determined not only by the dimensions and the material parameters of the resonant structure, but also by the parameters vp, g, ae and εd. capacitive mems resonators generally have higher q than piezoelectric ones (because in piezoelectric resonators lossy metallic electrodes are deposited on top of the resonant structure). the q factor of capacitive resonators that oscillate in bulk modes is greater than that in flexural resonators of the same resonance frequency due to lower energy loss (clamping loss, dissipation due to the surrounding medium, due to surface defects, thermoelastic effect) [15, 16]. the q factor of capacitive bulk mode resonators remains at its maximum at higher values of pressure (i.e. q>10 5 at pressures of ~10 4 pa [17]) in comparison to rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 353 flexural ones, thus vacuum-packaging of certain types of resonators oscillating in bulk modes is not necessary in order to achieve a greater q. however, there are other effects of gas presence in the environment (e.g. resonance frequency drift and fluctuations) that influence the choice of operating conditions and resonator packaging. fig. 3 shows the values of f0q reported in the literature for some of the realized capacitive mems resonators, for which we also show the values of the resonance frequency and the q factor [14, 16-31]. this diagram can be used for the comparison of the performance of rf mems resonators and quartz resonators. it can be observed that f0q values corresponding to the best available quartz resonators are already reached by mems structures. also, mems resonators go far beyond conventional cmos (lc) resonators in terms of the presented parameters. fig. 3 values of f0q reported in the literature for some of the realized capacitive mems resonators. capacitive resonators can be completely fabricated using materials that are compatible with silicon ic technologies, making them suitable for monolithic integration with transistor circuits. although the highest level of integration is achieved by fabricating a resonator on the same chip with cmos circuitry [32], which means that the fabrication of the resonator is embedded in an existing cmos flow (it either precedes cmos processing steps or is performed between them), it almost always implies degradation of the performance of either cmos circuits or the resonator. the most convenient method of monolithic integration is the post-cmos integration (or above-cmos), in which the mems processing is done on top of prefabricated cmos layers. in that case, the mems and cmos processing steps are optimized and the mutual influence is minimized. however, then the temperature at which mems processing steps are performed is limited to 450c, which influences the choice of resonator material [3]. for example, sige and ni can be processed using low temperature techniques in order to fabricate resonators. 354 i. jokić, m. frantlović, z. djurić, m. l. dukić pe materials are not standard for si technologies, which makes the integration of pe mems resonators with ics difficult, with the exception of the resonator with an aln layer. mems technology can be used for the fabrication of pe thin films. sputtered aln thin films can be processed below 450c and they are therefore suitable for the integration of mems resonators on top of cmos circuitry. recent technological advances allow for the integration of pe resonators with cmos circuits on the same chip [6]. for example, the saw resonator (q below 500) fabricated by combining a standard 0.6 μm cmos processes and mems technology [33] is monolithically integrated on si with active cmos circuits. over a period spanning more than a decade, great attention has been dedicated to the integration of fbar with a cmos circuits [34-37]. fbar filters and duplexers are suitable for hybrid integration within the mcm (multi-chip module). the monolithic fbar-cmos integration is more complicated to perform than the integration of mems saw resonators and cmos. monolithically integrated 2 ghz fbar on si, described in [35], has q=780, which is one of better results. other aln-based ghz fbar resonator fabricated on top of a bicmos circuitry is presented in [38]. lbars fabricated by processes compatible with si ic technologies have better performance than cmoscompatible fbars. an example for this are the above-mentioned cmos-compatible lbars in the form of contour-mode oscillating aln rings and lfers, suitable e.g. for post-cmos integrated on-chip direct ghz frequency synthesis in reconfigurable multiband wireless communications [9-11, 39]. however, it should be pointed out that though the mems-cmos monolithic integration is desirable in terms of miniaturization, it may not be the best solution in terms of cost. mems resonators operating in modes in which f0 depends on lateral dimensions of a resonant structure (most of the capacitive bulk modes, saw, lbar) are suitable for realization of monolithically integrated rf filter banks, which consists of a large number of resonators with different resonant frequencies. switches are commonly used for the selection of filters from a filter bank. due to the simple filter selection (without switches that cause attenuation), and fabrication compatibility with si ic technologies, capacitive resonators with bulk oscillating modes enable the fabrication of rf filter banks with minimal dimensions and minimal energy loss, monolithically integrated with active cmos circuits. the change of the resonance frequency in mems resonators with temperature is a result of the temperature dependence of the young modulus of elasticity, the thermal expansion of materials, and mechanical stress in the resonant structure due to different coefficients of thermal expansion of the resonant structure and structures surrounding it. the relative change in the resonance frequency in most mems resonators is a linear function of temperature, with a negative slope [40]. the temperature coefficient of frequency of a si resonator is typically between –15 ppm/°c and –30 ppm/°c [40]. temperature stability of the frequency of pe resonators fabricated using the aln technology is about –25 ppm/°c [41]. these values are acceptable for the implementation of preselect rf filters and rf image-rejection filters, but not for oscillators in which temperature stabilization of frequency is necessary. different methods for temperature compensation are used in mems resonators: at the level of fabrication process, resonator design or external circuits [42-48, 3]. for example, doping of silicon reduces the temperature-dependence of the modulus of elasticity [45, 46]. a greater temperature stability of frequency can be achieved by fabricating the resonator using a combination of materials whose thermal expansion rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 355 coefficients are different and/or whose temperature coefficients of the young modulus are different, so that an appropriate design can ensure the elimination of individual effects of temperature changes [47]. the effective stiffness and, consequently, the resonance frequency can be varied in order to ensure temperature compensation [49]. this may be achieved e.g. by a mechanical deformation of the structure, using temperature-dependent mechanical stress [50]. the adjustment of the resonance frequency can be done by changing the gap between the electrode and the resonant structure [12], the electrode overlap area [13] or the dc bias voltage, which change the effective stiffness as a function of the temperature [48]. the frequency adjustment range in capacitive resonators is larger than in piezoelectric ones. the range of 8.4% has been achieved in capacitive resonators by means of integrated heaters [51]. in fbars operating above 1 ghz tuning range of 1.47% is achieved by using the tuning voltage of 7v [52]). one of the temperature compensation methods using external circuits is based on the temperature-dependent frequency synthesis. by applying various methods of compensation or their combination in mems resonators the temperature variation of the frequency is reduced to the value of 0.1-300 ppm in the temperature range between 60 k and 200 k [3]. in commercial mems oscillators (sitime inc.), the temperature compensation is achieved using digital techniques (a temperature sensor and an external cmos circuit are used) [53]. long-term frequency drift (i.e. frequency aging) of mems resonators of the order of ppm/year is observed [54], and it can be as low as 1 ppm/year [53, 55] which is better than that of a typical quartz resonator. the resonance frequency aging depends on the hermeticity of the resonator package. the resonance frequency of em resonators changes with pressure variations due to various effects. in quartz resonators, the influence of pressure on the modulus of elasticity dominates, due to which the resonance frequency increases linearly with the increase of pressure [41]. the resonance frequency of mems resonators decreases with increasing pressure, probably due to adsorption (binding) of the particles of surrounding gases onto the surface of the resonator. this effect is more pronounced in resonators of smaller size and mass. the value of the equivalent series resistance (also called motional resistance), rm, is important for the coupling of a resonator with other rf circuits. it should be low enough for the appropriate matching to the impedance of conventional rf circuits, which is typically 50 ω. in filters, the signal attenuation in the passband is smaller at lower values of series resistance. in oscillators, the necessary amplification depends on rm. lower values of a resonator's series resistance in oscillators enable the amplifier gain to be lower, leading, consequently to lower power consumption. at lower rm the output power is higher. higher rm values challenge the fulfillment of the requirements for starting and maintaining of oscillations [3], and increase the oscillator's phase noise. capacitive resonators typically have rm of the order of 1-100 kω (regardless of the resonance frequency [3]), which can be a problem for coupling the resonators with antennae or other rf devices. for example, a flexural resonator (f0=5.1 mhz, q=80000) presented in [31] has rm=35 k; the si resonator oscillating in flexural mode (f0=1 mhz, q=1000), described in [56], has a relatively small value of motional resistance (340 ), whereas the flexural si resonator (f0=14 mhz, q=1500) from [57] has an extremely high value (1 m). a si square wine-glass mode resonator [29] has rm=10 k (f0=2 mhz, q=4.0510 6 ). motional resistance of a quadratic si plate resonator oscillating in the 356 i. jokić, m. frantlović, z. djurić, m. l. dukić contour mode (f0=1.31 mhz, q=130000) is 4.47 k [23]. the resistance of a si bulkmode resonator in the form of a disk (2.1 k, f0=24 mhz, q=53000) [58] is of the same order of magnitude, as well as that of the 145 mhz resonator (2.4 k) [59]. si bulk-mode resonators presented in [60] (f0=13 mhz, q=10 5 ) and [61] (f0=60 mhz, q=6200) have relatively small values of rm, amounting to 500  and 966 , respectively. the bulk mode ring resonator described in [62] has rm=200 k (f0=1.95 ghz, q=8000). the reason for the high resistance values is in the nature of the electrostatic transduction mechanism in which a low intensity force is generated and used for actuation. there are several ways to reduce rm: by using a higher bias voltage, by reducing the distance between the actuation/detection electrode and the resonant structure, by changing the resonator design (ensuring a greater overlap surface area of electrodes in capacitive transducers), by using several mechanically coupled resonators in parallel, etc. pe resonators have lower motional resistance compared to capacitive ones similar in shape and size (due to a higher em coupling coefficient). in addition, the value of the impedance in pe resonators decreases with the increase of f0. fbars have lower motional resistance than lbars at the same electrode surface area (in fbars, it is easy to achieve the rm of 50 ω). however, low rm values have also been achieved in lateral pe resonators. for example, the rm of aln contour-mode ring-shaped resonators (f0 in the range 223– 656 mhz) is between 56  and 205  [9]. in lbars in the form of a circular ring, the series resistance depends on the mean radius, whereas in square ring lbars it depends on the mean side length of the basis, so by varying of those dimensions rm can be adjusted without changing the resonant frequency, which is determined by the width of the ring. for example, a cmos-compatible lfer (f0=1.01 ghz) has rm≈150  [11, 39]. when the amplitude of oscillation becomes comparable with the characteristic dimension of the resonant structure in pe resonators or with the distance between the electrodes of capacitive resonators, the em coupling coefficient and the effective stiffness of the resonator start to depend on the deformation, i.e. on the amplitude of the alternating actuation voltage and the resonator begins to work in a nonlinear regime [18, 63]. nonlinear effects are a consequence of material nonlinearities, electromechanical coupling, or they have a different mechanical origin. generally, when stress and strain reach a certain value, a linear relationship between them ceases to exist and the resonator stiffness constant becomes a function of stress and strain. in pe resonators, piezoelectric coefficients begin to non-linearly depend on strain. in capacitive resonators the nonlinear behavior is partly a direct consequence of a nonlinear relationship between the capacitance and the change in the distance between the electrodes. in addition, at high power levels parasitic modes can be excited along with the desired mode of oscillation. nonlinear effects limit the maximum amplitude of oscillation, i.e. the maximum signal power at which the resonator operates in the linear regime. however, it is desirable that the amplitude of oscillation be as high as possible, i.e. that the resonator be capable of handling high power levels (for example, in order to reduce the oscillator phase noise). the power handling capability of mems resonators is lower than that of quartz resonators. for example, in flexural mems resonators, it is of the order of 1 μw, while in quartz resonators it is 100 times greater [18]. mems resonators with a higher stiffness can be driven by higher power levels while operating in the linear regime (non-linear effects are less pronounced); accordingly, the resonators which oscillate in bulk modes are better in this respect than flexural ones (for rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 357 example, maximal power may be of the order of 1 mw). because of the higher q factor and higher resonance frequencies compared to flexural resonators, capacitive resonators with bulk oscillation modes are more suitable for realization of filters and frequency synthesis in wireless transceivers. a smaller distance between the electrodes of capacitive transducers and higher voltage vp lead to the increase of non-linearity and reduce the power handling capability. capacitive resonators operate with a higher signal power in the linear regime if the overlap surface area of the electrodes is larger. resonators with the pe transduction mechanism are more linear and have a better power handling capability (fbar up to the order of 1 w). in mems resonators, a higher output signal power can be obtained using mechanically coupled parallel resonator arrays [64]. based on the achieved parameter values, dimensions and cmos compatibility, rf mems resonators are considered as a solution for realization of fully integrated rf systems. however, the potential of rf mems resonators for applications in wireless communications has not been sufficiently exploited yet. in the case of capacitive resonators, remaining problems that prevent wider practical application are high motional resistance and insufficient power handling, while in the case of high f0 pe resonators it is a low q (limited to several thousand). nevertheless, significant results achieved after the year 2000 (especially in terms of better temperature stability, better long-term stability, improved packaging) have enabled the commercialization of both pe and capacitive mems resonators. an example of a commercial product is agilent's fbar filter from 2001. this is the first rf mems component that appeared on the market. fbar filters have better performance (a higher q factor, lower insertion loss, better selectivity, better temperature stability, the ability to work with higher rf powers greater than 1 w) than conventional saw filters at frequencies around 2 ghz and above. mems baw (fbar) resonators find the main application in mobile terminals, where they have replaced traditional duplexers, which are bulky non-integrated components. they are also used in bandpass filters, which are traditionally realized using conventional off-chip saw components of larger dimensions. for example, by using fbar components in mobile terminals instead of two saw filters that are traditionally used for pcs bands 18501880 mhz and 1880-1910 mhz, the area needed for the transmission filter is reduced by 90%, and so is the realization cost. fbar duplexers and filters are currently the only novel pe frequency selective components that meet all the required specifications of wireless standards and enable the miniaturization of the rf part of the transceivers of multiband multimode mobile terminals. the aln fbar resonator manufactured by avago technologies is the most successful mems resonator in the past decade [8]. capacitive mems resonators that can be used instead of quartz resonators have also become commercially available (discera, sitime). the first silicon mems oscillator manufactured by discera appeared in 2003. its resonant structure is in the form of a cantilever, with dimensions of 30  8 μm 2 and a resonance frequency of 19.2 mhz. the following year, the same manufacturer presented the first integrated mems tunable oscillator with a nominal frequency of 1.6 ghz, intended to be used as a voltage controlled oscillator of the local oscillator in transceivers of mobile terminals; however, it is not commercially available. in 2006, the first sitime mems oscillators with a resonant structure in the shape of a square ring oscillating in the flexural mode appeared in the market. commercially available is also a sitime resonator with a resonace frequency of 5 mhz (q=80000, vp=1.8-4.6 v, long-term frequency stability 0.5 ppm/year, 800  600  150 μm 3 in size), fabricated on si. a si 358 i. jokić, m. frantlović, z. djurić, m. l. dukić mems chip is placed on a cmos chip that contains amplifier circuits, circuits for temperature compensation and programmable memory. the dimensions of the packaging that contains both chips are 2 × 1.6 × 0.25 mm 3 and this is currently the smallest programmable oscillator. and what are the future needs? the development of mems resonators with f0~1 ghz and q>10 4 would enable implementation of new and compact multiband multistandard transceiver architectures (e.g. direct channel selection at the rf stage) [65]. frequency references in the ghz range are also desirable in future wireless communications and other high-speed electronic systems. although the possibility of fabrication of monolithically integrated mems resonator arrays of different resonance frequencies is very significant for multiband transceivers, enabling versatility and reconfigurability on a small surface, the ultimate objective in that sense are the resonators whose parameters are adjustable in a wide range, resulting in a significant reduction in the number of necessary components. therefore, high-q resonators oscillating at ghz frequencies and tunability of the resonance frequency are highly needed in future systems. in the next subsection the means for achieving these goals will be considered. 2.2. achieving ghz resonance frequencies and the resonance frequency tuning in order to achieve the resonance frequency of a mechanical structure in ghz range one has to choose appropriate geometry, dimensions and the material of the structure. the analysis will be performed for a doubly clamped beam resonator, since it is commonly used as a model structure in theoretic considerations. from the expression for the mechanical resonance frequency of the clamped-clamped beam oscillating in the first flexural mode, f0=1.03(h/l 2 )(e/ρ) 1/2 , it is obvious that the resonance frequency will be higher if a structure is made of a material with a high e/ρ ratio (e is the material's young modulus, ρ is its density) and also if the geometric parameter h/l 2 (h is the beam thickness, and l is its length) is high. fig. 4 shows the calculated dependence of the resonant frequency on h/l 2 for the beams made of different materials commonly used in mems and characterized by the ratio e/ρ. this diagram is created based on the diagram in ref. [66]. it leads to the conclusion about the values of the h/l 2 ratio at which ghz frequencies can be achieved with a beam made of a certain material. the calculation results (according to the expression for f0 given above) suggest that resonators with ghz fundamental resonance frequencies have nanometer dimensions, and they are, therefore, fabricated using nems technologies. in a majority of mems resonators realized so far, resonance frequency tuning is implemented in order to compensate temperature or fabrication process variations of the resonator parameters. several frequency-tuning methods have been reported as mentioned before. however, tunable rf components for multiband transceivers require a much greater frequency tuning range compared to both temperature and process variation compensation. mechanical tuning methods based on the change of the resonator's effective spring constant can yield a high tuning range without significant degradation of the q factor, and are simple for implementation. resonators with a high f0 due to a high mechanical stiffness (oscillating in bulk modes) have a lower tunability than flexural resonators. one of the methods for frequency tuning through the change of the effective spring constant is based on the application of mechanical tension, i.e. tensile strain on the resonant structure. for example, rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 359 the resonant structure can be exposed to mechanical stress by using electrothermal actuators (they require a significant amount of additional surface area), by utilizing a more compact capacitive tuning in which the structure deforms under the influence of electrostatic force, or by some other mechanism. we analyze the resonance frequency dependence on mechanical tension in the case of a clamped-clamped beam, in order to quantitatively estimate the capabilities of the method in terms of both the tuning range and the influence of the resonator's parameters on the tuning range. fig. 4 doubly clamped beam resonator oscillating in the first flexural mode: a) the dependence of the resonance frequency on the geometrical parameter h/l 2 (h is the beam thickness, and l is its length), for the beams made of different materials, characterized by the ratio e/ρ, b) left axis: dependence of the eigenvalue z1 (determining the resonance frequency) on the tension dependent parameter p, right axis: ratio of the resonance frequency of an arbitrary beam under the tension and the resonance frequency in the absence of the tension, as a function of p (p=12(l/h) 2,  is the uniaxial tensile strain). the resonance frequency of the n-th flexural mode of a resonant structure in the shape of a double-clamped beam, under the tension n, is given as )( )( 1 ρπ2 )( )( )( 1 )0( )( )0()( 22 2 22 2 00 nz np wh ei l nz nz np z nz fnf n n nn n nn  (1) where fn0(0) is the beam's resonance frequency in the absence of the tension, lwh are the beam's dimensions (lengthwidththickness), e is the young modulus, i is the moment of inertia (i=wh 3 /12 for a beam with a rectangular cross-section), and the tensiondependent parameter p is ε)/(12)/()( 22 hleinlnp  (2) in the above expression ε is the applied uniaxial strain. the equation that has to be solved [67] for zn in order to obtain the resonance frequency of the n-th flexural mode of a double-clamped beam under tension, written in a convenient form, is 1)/1sinh()sin()]/12/([)/1cosh()cos( 2222  nnnnnnnn zpzzzpzpzpzz (3) 360 i. jokić, m. frantlović, z. djurić, m. l. dukić this equation is solved for the first (fundamental) oscillation mode, considering three characteristic cases: a) when p is low, i.e. p≈0, which corresponds to the absence of tension, eq. (3) becomes 1)cosh()cos( nn zz (4) which for n=1 yields z1(0)=4.73. b) when p is high, thus p/zn 2 >>1, eq. (3) is approximately 0))/2(sin(  pzarctgz nn (5) and its solution corresponding to the first mode is z1=. c) for arbitrary p, eq. (3) was solved numerically. the obtained dependence z1(p) is shown graphically in fig. 4b (the left axis). based on it the frequency ratio f1(n)/f1(0) is calculated as a function of the parameter p and shown in the same diagram (the right axis). (in the remaining text and diagrams the first mode resonance frequency will be denoted with f0 instead of f10.) this diagram gives a general insight into the amount of change of the resonance frequency of an arbitrary beam resonator oscillating in the given mode, attainable by applying an arbitrary tensile strain. for a resonator with a given l/h ratio and under a certain amount of strain, the frequency tuning ratio can be obtained based on eq. (2). for example, assuming the maximal strain of 1% (corresponding to the yield strength of common semiconductor materials used in mems), for mems resonators with the ratio l/h=60 the parameter p=432, so the maximum tuning ratio of 3.3 is obtained from the diagram. the diagram in fig. 5a shows the dependence of the first flexural mode resonance frequency of doubly clamped beam resonators (l/h=60), made of various semiconductor materials commonly used in mems, on the applied uniaxial tensile strain. this dependence is obtained by applying the presented theory. two distinct regions can be observed in the diagram. in the first region, which corresponds to low values of ε (p/zn 2 <<1, so eq. (4) is valid), the resonance frequency is practically independent of tension. this is the bendingdominated resonant frequency region. in the second region the increase of the resonant frequency with the applied strain can be clearly seen, and also the mentioned ratio f0(ε)/f0(0) of 3.3, that corresponds to ε=1%. as the tension increases, it begins to dominantly determine the resonance frequency (p/zn 2 >>1), so this region is called the tensiondominated resonance frequency region. also, it can be concluded from the same diagram that the ratio f0(ε)/f0(0) does not depend on the parameters of the material. the dependence of the same ratio on ε is shown in fig. 5b for three different values of l/h (20, 100 i 1000). the values of ε at which the resonance frequency is bending-dominated (or tensiondominated) depends on the ratio l/h. at higher l/h ratios lower ε values are required in order to attain a certain factor of the resonance frequency change, i.e. the same strain applied in a resonator of a higher l/h ratio yields a higher f0(ε)/f0(0) ratio. for fixed l/h, the maximum achievable resonance frequency depends on the maximal possible strain (it depends on the resonator's material properties and the maximum value of the control voltage in the given application). rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 361 fig. 5 doubly clamped beam resonators oscillating in the first flexural mode: a) the dependence of the resonance frequency of beams (l/h=60) made of various semiconductor materials commonly used in mems, on the applied uniaxial tensile strain, b) the dependence of the ratio of the resonance frequency of a beam under the tension (i.e. axial strain) and the resonance frequency in the absence of the tension, on strain, for three different values of l/h. based on the presented analysis and results from the literature, the following conclusions can be made: 1. in order to achieve nominal resonance frequencies in the ghz range, the resonator needs to be made of a material with high e/ρ ratio (i.e. the material should be stiff and/or light); also, the resonant structure needs to be of nanometer dimensions (the domain of nems technologies), 2. for a wide frequency tuning range to be achieved by application of tensile strain, the material needs to have a high yield strength (i.e. to withstand a high strain); it is also necessary for the l/h ratio to be as high as possible, 3. high resonance frequencies of mems resonators are typically achieved in structures of high mechanical stiffness, which makes frequency tuning difficult. nems resonators, however, achieve high resonance frequencies while having the mechanical compliance needed for tunability [68]. 2.3. transition from mems to nems resonators. rf mems/nems dimensions scalling challenges nanoelectromechanical (nems) systems contain mechanical features whose at least one dimension is under 1 micrometer. since the year 2000 a significant advance has been achieved in the development of nems resonators. due to unique mechanical properties, nems resonators provide a promising basis for future ultrafast communication systems, highly-sensitive force and mass sensors, biomedicine etc. a majority of nems resonators is in the shape of a nanoscale beam (doubly-clamped, cantilever or free-standing) made of si or sic, that oscillates in response to an applied external force [66, 69-72]. their length is typically between 1-20 μm, while the thickness and width are smaller than 1 μm. the effective mass of nems is usually 10 -14 g, and typical resonance frequencies are in the range between 1 mhz and 10 ghz [70], while the dissipated power can be as low as 10 -17 w. 362 i. jokić, m. frantlović, z. djurić, m. l. dukić the first rf si resonator of nanoscale dimensions (7.7 μm  330 nm  800 nm, beam shape), reported in 1996, had the fundamental resonance frequency around 70 mhz and q=1.8·10 4 [69]. later the silicon nems beam resonator fundamental frequency of 380 mhz was reached, with q of the order of 1000 at room temperatures [73]. first nems resonators whose resonance frequency exceeded 1 ghz were sic beams [74]. dimensions of one of them, with the resonance frequency of 1.029 ghz, are 1.1 μm  120 nm  75 nm, and q~10 4 . other materials typical for mems, such as gallium arsenide, silicon nitride, aluminum nitride and nanocrystalline diamond, are also used for fabrication of nems beam resonators with similar values of q as previously mentioned, and f0 being in the range from the order of 10 mhz to the order of 100 mhz [75, 76]. for example, a doubly clamped nanobeam aln resonator (4 μm  900 nm  320 nm) oscillating in flexural mode has the resonance frequency of 78.2 mhz, and q=670 at room temperature [77]. metallic (au, pt, al, ti) nems resonators were also demonstrated, having fundamental resonance frequencies of the order of 10 – 100 mhz, and q of the order of 1000 at the temperature of 4 k [78, 79]. nanostructures of a high aspect ratio (defined as the ratio l/h or l/d, where d is a structure diameter) are called nanowires. they can be made of si, sic, au, ag, pt, ge, zno, gaas, sin etc. [78-83]. some of techniques for fabrication of nems resonators are inherited from mems. however, the transition from microto nanoscale often implies qualitatively new technological solutions. different methods exist for fabrication of nems/nanowire resonators, and can be divided into the following categories: top-down, bottom-up and hybrid methods. in top-down methods nems devices are made of bulk materials or thin films that are patterned by lithography and etching to create fully released structures such as clamped beams and cantilevers. top-down methods are e.g. those based on standard electron beam lithography (ebl), superlattice nanowire pattern-transfer (snap), nanoimprint lithography (nil) or stencil lithography. top-down methods typically provide a high level of control regarding the design and geometry of the resonator. by using ebl very high aspect ratios of nems structures are achieved, such as l/h250 in 20-25 nm thick sic nanowires presented in [81]. this method enables fabrication of nanowires using different materials such as si, gaas, sin etc. nanowires made of au, cr, al, ti, nb, pt or ni by using snap method are reported. one of them is a suspended pt nanowire with a diameter of 20 nm and a length of 0.75 m (a diameter as small as 8 nm is possible) [80]. nil offers high resolution (5 nm) and also high-volume fabrication. metallic nanowires can be fabricated by using wafer-scale stencil lithography. in [82] 70 nm thin al nanowires, 5 m long, fabricated by using this method are presented. bottom-up methods include, for example, synthesis of si, sic, gan, zno nanowires by vapor-liquid-solid (vls) growth. problem of bottom-up methods in general is the control of nanowire length, diameter and spatial distribution. another disadvantage of these methods is their low efficiency. hybrid top-down/bottom-up methods include, for example, integration of si nanowires synthesis into device fabrication [83]. these methods enable better control of nanowire dimensions. si nanowires of a 50-150 nm diameter, about 2 m in length, fabricated by using a hybrid method, are presented in [71]. among them are a metalized si nanowire with a resonance frequency about 200 mhz and q2500 (measured in high vacuum at cryogenic temperatures), whose resistance is matched to 50 , a 80 mhz non-metalized si nanowire with q=13100, and a non-metalized si nanowire with f0=215 mhz and q=5750 (the rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 363 resistance of the latter two is of order of 10-100 k). it can be concluded that the product f0q of the order of 10 12 is achieved in nanowire resonators. there are several methods of actuation and detection of motion in nems resonators: electrostatic, optical (e.g. free-space or fiber-optical interferometry), piezoelectric, magnetomotive/electromotive, piezoresistive, methods based on single electron transistors (set), atomic point contact (limited to resonators made of conductive materials that do not form surface oxides), photonic transduction etc. however, not all the mentioned methods are equally suitable for applications requiring a compact actuation and detection system (preferably on a chip), for resonators of extremely small dimensions or those made of arbitrary materials. for example, magnetomotive transduction is often the right choice for both drive and detection of motion of very small structures oscillating at extremely high frequencies. however, its significant limitation is that it requires a strong magnetic field (1–16 t) produced by a superconducting magnet. such a strong field also causes circuit loading and renders the setup large and expensive. purely capacitive transduction methods suffer from very low signal levels and parasitic coupling at very high frequencies. optical transduction cannot be realized on-chip, and its sensitivity decreases as the resonator size scales down, because the diameter of the focused beam is limited from below by diffraction (this limitation can be overcome by using waveguides of a submicron cross-section, located on the substrate near the resonator). photonic method implies significant fabrication difficulties for dimensions of the order of 10 nm and below. promising results have been reported regarding optical multiplexing techniques. the transduction efficiency of the piezoelectric method is very high and it is extensively used in bulk mode mems resonators. however, the method is less convenient for small structures as the crystalline structure must be maintained for a material to be piezoelectric, thus limiting the lowest possible device thickness. nevertheless, both nems cantilevers and doubly-clamped beams have been successfully demonstrated with pe layers as thin as 100 nm, proving that pe layers can be used as efficient nanoscale transducers [77]. intrinsic amplification mechanisms such as transistor-based charge modulation are promising at room temperatures. pronounced piezoresistive effect in doped si nanowires due to longitudinal strain enables integrated piezoresistive self-sensing of strain or displacement (a nanowire without patterned piezoresistor loop is a transducer) [84]. some other methods (based on set or superconductive microwave cavity) are used only at low temperatures [85], and are difficult to implement. one of interesting new all-on-chip solutions applicable at room temperature is, for example, a self-transducing nems system based on the cointegration of a finfet transistor and a suspended doubly-clamped beam silicon resonator [86]. in this example electrostatic actuation and transistor-based detection of the resonator motion are used. there are significant benefits of scaling down the dimensions, such as high speed operation, higher resonance frequencies, higher component density and better integration. however, apart from the mentioned features of nems components, which are a result of miniaturization, and beneficial in high-frequency signal processing and sensing applications, there are problems that remain to be solved on both theoretic and experimental level. the studies in the field of nems are at the forefront of physical and engineering sciences. most developments in this field are currently confined to theoretic models, simulations and laboratory experiments, with nems components in a prototype stage, at best. 364 i. jokić, m. frantlović, z. djurić, m. l. dukić some solutions used in mems do not scale well into the nems domain. apart from technological issues regarding reproducibility and control of surface and bulk properties of extremely small structures, remaining issues include efficient energy conversion mechanisms and coupling between nems and other components and circuits. the small size of nems typically results in a small motional signal. in spite of many different transduction methods applied in nems resonators so far, inducing resonator motion and detecting of weak mechanical signals at very high oscillation frequencies, at room temperature and with low power dissipation remain challenging, especially if a compact solution, such as a system-on-chip, is required. small motional signal can easily be overwhelmed by parasitic coupling or background noise. as the dimensions decrease, so does the signal-to-noise ratio. there are also problems with energy loss at clamping sites (clamping loss), which increases with f0, as well as with surface losses and other effects leading to the increase in energy dissipation, and, consequently, the q factor decrease. therefore, there are limits to the reduction of device size. q of nems resonators can reach thousands, even tens of thousands, but, except in rare cases, such q values have been reached only at temperatures below 25 k. a sin 50 nm thick square membrane with the fundamental resonance frequency of 133 khz is an example of a nems resonator with q of the order of 10 6 at the room temperature [87]. however, attaining a high fundamental resonance frequency without decreasing the q value is the remaining problem in nems development. as in mems, solutions are also needed for reduction of the series resistance of nems resonators and improvement of their power handling. from the theoretical standpoint, it is important to analyze the applicability of the continuum approach to the calculation of mechanical characteristics of an extremely small resonator. reduction of the noise caused by physical effects that become pronounced as the dimensions decrease is another important task which requires both theoretic and experimental research. in mems, and especially in nems resonators, additional noise generating mechanisms exist that are characteristic for structures of small dimensions and mass, and high surface-to-volume ratio. it is therefore necessary to investigate their influence on the resonator performance as a function of dimensions of the structures and the operating conditions. in section 3, by analyzing the adsorption-desorption (ad) noise that becomes prominent as the dimensions and mass of the components decrease, we contribute to the theory of noise in mems and nems resonators, and subsequently to the theory of phase noise in oscillators using rf mems/nems resonators as frequency determining elements. 2.4. rf nems resonators based on 2d crystals recent years have seen increasing interest in nems that utilize carbon nanostructures, such as one-dimensional (1d) nanotubes or two-dimensional (2d) beams or membranes, as building blocks. these structures are based on graphene, a planar sheet of carbon atoms arranged in a honeycomb lattice. graphene structures, consisting of one or a few of atomic layers, are intrinsically nanoscale. since the carbon-based nanostructures emerged, a continued miniaturization of resonant nems has advanced into atomically thin 2d or 1d nems. rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 365 graphene has high 2d elastic stiffness (2d young's modulus e2d=340 n/m, corresponding to e=1 tpa reduced to a single atomic layer) and high breaking strain (25%), which exceed the values for any of the thin-film materials currently used for nems. it also has a low mass (2d=7.410 -7 kg/m 2 ) and a high e/ρ ratio. the strength of carbon-carbon bond makes graphene quite flexible. being atomically thick, graphene structures have extremely high l/h ratio. these characteristics imply that the conclusions 1-3 made at the end of section 2.2 are in favor of graphene-based resonators as opposed to mems and nems resonators made of traditional materials: graphene structures can have high resonance frequencies which can be further increased and widely tuned by application of large strains. for example, for a graphene beam of 1 m in length, and exposed to 1 % of strain, the parameter p (eq. (2)) is about 10 6 , which, according to the diagram in fig. 4b yields the ratio of the resonance frequencies of stretched and unstretched beam as high as 10 2 (in typical mems resonators the ratio is 3.3, as stated earlier). apart from that, graphene's charge-tunable conductance and large charge mobility allow the efficient electrical transduction of mechanical vibration to electrical signal. thus, there is a growing interest in the development of graphene-based nems resonators. in fig. 6a a schematic diagram is given of a graphene doubly-clamped beam exposed to tensile strain. fig. 6b shows the strain dependence of the first mode resonance frequencies of 1 m and 2 m long doubly-clamped graphene beams (obtained by using eqs. (1)-(3)). it indicates that the resonance frequency can be increased by several orders of magnitude when stretching is applied, compared to the resonance frequency of the unstretched beam, which is a consequence of a high l/h ratio (l/h is about 3000 for a 1 m long graphene beam). because of that, ghz frequencies can be attained even when resonance frequencies of unstretched beams are in the mhz-range (typical for 2d resonators 1-5 m long). as it can be seen by comparison of figs. 5a and 6b, in atomically thin structures the values of ε above which the tension dominated resonance frequency region begins are significantly lower than in mems/nems resonators of a lower l/h ratio. in the following text a short description will be given of two types of carbon (graphene) based resonators: carbon nanotube resonators and graphene (beam and membrane) resonators. a carbon nanotube (cnt) is a hollow cylinder of covalently bonded carbon atoms. depending on the number of graphene sheets that are rolled concentrically, such a structure can be a single-walled carbon nanotube (swnt) or a multi-walled carbon nanotube (mwnt). the first successfully fabricated nanotubes were reported in 1991 [88]. typically, the diameter of a swnt is 1-2 nm, and the length is several micrometers (several millimeters long swnts have also been reported [89]). the diameter of mwnt is usually 2-25 nm, and its length is several tens of micrometers (they can be grown up to several centimeters in length [90]). currently, these bottom-up structures are typically synthesized by chemical vapor deposition (cvd), using the catalyst-assisted method which enables obtaining of nanotubes that are defect-free or with a few defects only. 366 i. jokić, m. frantlović, z. djurić, m. l. dukić fig. 6 a) schematic representation of a 2d (graphene) beam resonator under tension, b) the strain dependence of the first mode resonance frequencies of 1 m and 2 m long doubly-clamped graphene beams. the first nanotube resonator was made out of mwnt in 1999 [91]. tunable swnt and mwnt resonators have been reported in 2004 [92]. method of actuation and detection of a nanotube resonator motion, suitable for realization on a single chip, is described in [92]. the actuation is achieved through the electrostatic interaction between the tube and the underneath gate electrode, while the detection rely on nts transistor properties, i.e. on the change in the conductance of nanotube due to modulation of ntgate capacitance, which is caused by vibration of the nanotube, and measured by using the frequency mixing technique. this method was applied in characterization of doubleclamped swnts with the diameter of 1-4 nm, the length of 1.75-3 m, the resonance frequency in the range of 5.1-333 mhz, and qs of 50-100 (q=100 corresponds to the nt with the lowest f0, and q=50 to the highest f0 nt, measured in vacuum at room temperature) [93]. nanotube resonators operating at the ghz range, potentially applicable in rf systems, have been demonstrated recently [94, 95]. mechanical resonances as high as 39 ghz have been observed in carbon nanotube resonators [96]. typical values of nt resonators' q factor (from the order of 10 to the order of 100 at the room temperature) are lower than those of nems resonators made of conventional materials. for example, for a doubly-clamped swnt of 3 m in length and with f0=26.1 mhz, q factor about 90 is measured at room temperature and at the pressure of 10 -4 torr [97]. detailed consideration of different dissipation mechanisms in nt resonators is performed in [98]. lowering the temperature reduces dissipation, allowing for quality factors up to 2000 [99]. the highest reported q in nts exceeds 10 5 (swnt, f0=350 mhz), but it is obtained at as low a temperature as 25 mk, when tensile strain is applied [100]. among the highest q values (about 700) reported at room temperature and the pressure of 10 -4 torr is for a doublyclamped swnt (3 m length, f083 mhz), and the increase of q is attained by applying the parametric amplification concept [97]. the frequency of swnt resonators presented in [97] is tuned by varying the gate voltage, which changes the electrostatic force, so both the stretching (i.e. the increase of tension) of the nanotube and the electrostatic interaction with the gate occur, changing the nanotube effective spring constant. at the tuning voltage of 10 v, the resonance frequency increase of as much as 200% (the spring hardening effect due to increased tension dominates the electrostatically induced spring softening effect) is reported. in [93], by varying the gate voltage from 2 v to 3.5 v the tension in rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 367 nt was changed, thus enabling the adjustment of the resonance frequency in the range 714 mhz. a tunable band-pass filter utilizing singly-clamped nt resonator is analyzed in [101]. the center frequency and the bandwidth of the filter are voltage-tunable: the increase of the frequency by over 100% is attainable by varying the tuning voltage from 0 v to 50 v, while the bandwidth simultaneously decreases by 50%. graphene was obtained for the first time by mechanical exfoliation from graphite [102]. nowadays, graphene structures can be fabricated by a combination of top-down and bottom-up methods. unlike nts, graphene can be grown over large areas (using cvd or sic annealing). moreover, graphene can be patterned at the wafer scale by standard lithographic processes, compatible with other top-down processing techniques, which makes its integration with other components possible. the first graphene electromechanical resonator was demonstrated in 2007 [103]. the motion of a suspended graphene sheet (in the form of a doubly-clamped beam) was actuated by using the laser-based optical method or electrical method, and for detection an interferometric method was applied. subsequently, electrostatic excitation of mechanical vibrations combined with spm (scanning probe microscopy) detection was used for graphene resonators [104]. the electrical detection method, based on the change of conductivity of vibrating single-layer graphene due to the change of its distance from the gate, is described in [105], where the feasibility of actuating and detecting resonance on a single chip was confirmed. graphene resonators in the form of doubly-clamped beams have q of the order of 10100. for example, a single-layer graphene beam (1100  1930  0.3 nm 3 ) has f0=70.5 mhz and q=78, and a 15 nm thick multilayer graphene beam has f0=42 mhz and q=210, both at room temperature and pressure below 10 -6 torr [103]. a graphene resonator in the form of a circular membrane (4 m in diameter) has f0=52.19 mhz and q=55 [68]. drum-like graphene resonators of high q factor are also reported; for example, the q factor about 2400 is obtained at the room temperature and pressure lower than 610 -3 torr for the membrane of 22.5 m in diameter (f0 about 4 mhz) [106]. in graphene resonators q increases as the temperature decreases. as the temperature decreases to 50 k, the q factor of beam resonators rises above 1000 [103], while at 5 k it can be as high as 10000 (f0=130 mhz) [105]. energy dissipation mechanisms that determine the q factor value in graphene resonators are reviewed in detail in [98]. due to a built-in tension, resonance frequencies of graphene resonators are higher than expected for structures of given dimensions and predicted by bending alone. the built-in tension originates from the fabrication process [103]. a typical built-in strain is of the order of 10 -5 -10 -4 [105]. a high tunability of graphene resonance with the applied gate voltage that induces tension in the resonant structure is observed [105]. the resonance frequency of a 3 m wide and 1.1 m long single-layer graphene beam increases from 30 mhz to 65 mhz as the gate voltage changes from 0 v to 7v [105]. the resonance frequency tunability as high as 400% is reached [105]. tensile strain does not only increase the resonance frequency but can also significantly reduce dissipation (i.e. increase the q factor) [98]. the increase of q with the tensile strain is also observed in si, sin and gaas nems resonators [98]. 368 i. jokić, m. frantlović, z. djurić, m. l. dukić in ref. [68], oscillators containing a graphene nems resonator are reported, whose frequency can be electrostatically tuned by as much as 14%. self-sustaining mechanical vibrations are generated and transduced at the room temperature using simple electrical circuitry. the 52.2 mhz nems oscillator based on a graphene circular drum (4 m in diameter) has q=4015 at the room temperature. the graphene vco, which is the first prototype device for rf applications based on graphene nems, presented in the same reference, shows promising performance. also, in [68] experimental data pertinent to phase noise of graphene oscillators were presented for the first time. graphene resonators have more reproducible characteristics than nts. signal levels in graphene resonators are improved compared to those in nt resonators, due to the ability to fabricate micrometer-wide structures with higher conductance than that of onedimensional nanotubes [105]. by exposing a micrometer-scale graphene resonator to strain, an increase in the resonance frequency (in ghz range) can be achieved without a decrease in the signal level, and the dynamic range also increases with the strain (since the amplitude at the onset of nonlinearity increases with strain). this is an advantage compared to top-down nems in which high resonance frequencies are achieved by reducing the resonator dimensions, which in turn causes a decrease of both the output signal magnitude and the amplitude at the onset of nonlinearity, also decreasing the dynamic range and making ghz-range transduction difficult [105]. in spite of the great potential of carbon nanotubes and graphene in resonator applications due to their extraordinary mechanical properties (enabling high resonance frequencies and high tunability), there is a number of issues that need to be addressed in order to enable practical applications. for example, integration of cnts and control over their location on-chip make mass production of cnt-based nems devices difficult to achieve. further research activities aim to provide simpler and more reproducible techniques for fabrication of ultraclean nanotubes, and exploration of frequency tuning mechanisms and nanotube nonlinear dynamics. the improvement of quality factors of both nanotube and graphene resonators is an important task. cnt and graphene structures have the largest surface-tovolume ratios, so surface effects become increasingly important to investigate. noise generation mechanisms in these structures also require further investigation in order for their ultimate performances to be determined. also related to the subject of this paper are adsorbed mass fluctuations that generate the adsorption-desorption phase noise of resonators and oscillators. the extremely low mass of graphene structures, and their large surface-to-volume ratio make these resonators highly sensitive to added mass. therefore, the properties of such structures are highly sensitive to the amount of adsorbates and its change [107]. due to the high sensitivity to mass, stochastic adsorbed mass fluctuations could influence the fluctuations of graphene resonator parameters, i.e. the resonator total noise. there is not enough data in the literature about the effects of gas adsorption on mechanical and electrical parameters of graphene resonators and their oscillation, and therefore this topic requires further investigation. rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 369 3. phase noise in rf mems/nems operation of mems and nems components (including rf) is based on the interaction between the mechanical and the electrical domain of the system. thus, apart from the noises inherent to electrical and electronic devices (e.g. thermal (johnson) noise, shot noise, generation-recombination (gr) noise, 1/f noise), generated in em transducer circuits, amplifiers and other electronic parts of mems/nems systems, noise analysis in mems/nems has to include noise generating mechanisms in the mechanical domain [108]. fundamental (internal) mechanical noises are the consequence of the stochastic nature of physical processes occurring inside the mems/nems component or at the interface between the mechanical structure and the environment, which result in stochastic fluctuations of displacement of a mechanical structure and/or of its mechanical resonance properties, thus causing fluctuations of the electrical output signal. characteristic fundamental mechanical noises of mems/nems resonators are thermo-mechanical (tm) noise, noise due to temperature fluctuations (tf), and adsorption-desorption (ad) noise. their contribution to the total noise increases and may become dominant as the dimensions, mass and displacement of mechanical structures decrease. the short-term frequency stability, which is a significant parameter of mems/nems resonators, is determined by the phase noise. the oscillator phase noise, that degrades the signal transmission quality, originates from phase fluctuations caused by noise generation mechanisms in the oscillator's electronic circuit and also from the resonator noise [109]. the fundamental mechanical noises cause unavoidable stochastic fluctuations of the phase and frequency of a resonant structure oscillation and determine the lowest (fundamental) limit of the mems/nems resonator noise. therefore, tm, tf and ad noise are considered as a measure of the mems/nems resonator ultimate performance. although theoretical considerations of tm, tf and ad noise in mems/nems were published in the literature [108, 110-114], a need for more comprehensive models of noise in mems/nems resonators and oscillators still exists. further in this section, theoretic models of ad noise in rf mems/nems em resonators and of phase noise in mems/nems oscillators, presented in our papers [113, 115-123], will be briefly reviewed, and then the results of the quantitative analysis will be given. 3.1. adsorption-desorption noise in mems/nems resonators in mechanical structures of micrometer or sub-micrometer dimensions and minuscule mass, whose displacement is in nanometer range, the effects of physical phenomena that are negligible in the macroscopic world become significant. among such phenomena are adsorption and desorption of surrounding gases, that spontaneously and inevitably occur on surfaces of all solid bodies at temperatures higher than 0 k, and at pressures above 0 pa. stochastic nature of both the instantaneous adsorption and desorption rate results in stochastic fluctuations of the adsorbed particles number, n(t), and consequently the total adsorbed mass fluctuates (δm(t)) causing fluctuations of the mechanical resonance frequency of the mems/nems structure, δf(t), i.e. the resonator adsorption-desorption (ad) frequency and phase noise. the mean power of ad phase noise of a resonator in the bandwidth 1 hz at the offset-frequency  from the nominal frequency f0, expressed in dbc/hz, is [123] 370 i. jokić, m. frantlović, z. djurić, m. l. dukić 2 2 2 010log( ( ) /(2 )) 10log(( / 2 ) ( ) /(2 ))r f ml s f m s      (6) where sδν() is the power spectral density (psd) of resonator ad frequency noise. both these quantities are determined by the psd of the adsorbed mass fluctuations, sδm() (m is the resonator mass). in order to perform the statistical analysis of ad processes by using the approach which is common for gain-loss processes (ad processes and generation-recombination (gr) processes belong to them), the equation(s) describing the change of the number of adsorbed gas particles in time is (are) shown in the general langevin form inieniei nnnrnnngdtdn ξ),...,,(),...,,(/ 2121  (7) i=1,2,...n, valid for different types of ad processes. here, n1 is the total number of gases in the resonator surroundings whose particles adsorb in a single layer on the resonator surface [113, 115-119], or the total number of adsorbed layers in the case of multilayer single-gas adsorption [120, 121]. the index "i" refers to i th gas in a gas mixture, or to the particles in the i th adsorbing layer (which are not covered by (i+1) th layer). the equivalent rate of "generation" of adsorbed particles of the type i (i.e. of increase of their number) and the equivalent rate of their "recombination" (i.e. of decrease of their number), gie and rie, respectively, take into account the influences of all the processes relevant for the change of ni, and their forms differ depending on the analyzed case of adsorption on the surface of micro/nanostructures: single gas single-layer adsorption [115], single-layer adsorption of an arbitrary number of gases [116, 117], adsorption in an arbitrary number of layers [120, 121], or adsorption coupled with mass transfer [118-119]). i is the stochastic source function. for small fluctuations (ni) of the number of adsorbed particles around the corresponding equilibrium value (nie), so that ninie, eqs. (7) can be written in the matrix form 1 2 1 2 1 2([ ... ] ) / [ ... ] [ ... ]t t t n n nd n n n dt n n n ξ ξ ξ         k (8) ξnkn  dtd /)( (9) where k is the nn matrix of elements kij=-(gie/nj-rie/nj)n=ne, n=[n1 n2 ... nn] t , δn=[δn1 δn2 ... δnn] t , and ne=[n1e n2e ... nne] t is the vector of steady-state values nie, which are obtained from the steady state conditions gie(n1e,n2e,...nne)=rie(n1e,n2e,... nne). by performing fourier analysis, a square nn matrix sn2(ω) is obtained 1 ξ 1 )ω()ω()ω(2    iksiks t n jj (10) its elements (i,j) are single-sided spectral and cross-spectral densities, sninj*() [119 supplementary data]. according to the stochastic analysis of gr processes [124] and the analogy with ad processes, the psd of the i th source function equals si = 4gie(n1e, n2e, ..., nne)=4giee. since i and j (ij) are statistically independent, s is a diagonal nn matrix of elements sii=si. i is the unity nn matrix, ω=2π. rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 371 the total fluctuation of the adsorbed mass is δm=m1n1+m2n2+…+mnnn, where mi is the mass of a single particle of the type i (number of such particles at the surface is ni). the psd of adsorbed mass fluctuations is t n msm   )ω()ω( 2,nms (11) (m=[m1 m2 ... mn]) and it can be expressed in the general form                        n i i n i i inm ks 1 22 1 0 2 , )1(/)(  (12) coefficients ki and τi are obtained analytically for the given case of adsorption. the resonator ad phase and frequency noise are now obtained using eq. (6), where sδm() is given by eq. (11) or (12). in order to illustrate the applications of the presented approach, the results obtained for several characteristic cases of adsorption will be given. for example, in the case of single gas single-layer adsorption [113, 115, 123] 2 1 2 2 111 2 1 1, τ)πν2(1 τ)(4 )ν(   ee m ngm s (13) where τ1=1/k11=-(g1e/n1-r1e/n1) -1 n1=n1e, and n1e is obtained from the steady state condition g1e(n1e)=r1e(n1e). considering the mass transfer process, the psd of the adsorbed mass fluctuations for single gas single-layer case is also given by eq. (13), with τ1,mt=τ1(1+g1eert/(akmp)) instead of τ1 (p is the gas pressure, t is the temperature, a is the resonator surface area, and km is the mass transfer coefficient) [118]. mass transfer processes of particles in a resonator chamber can influence the fluctuations of the number of adsorbed particles, especially for low-pressure (low-concentration) environments [118]. for the resonator operating in a two-gas atmosphere (the simplest case of multiple gas adsorption), the psd of the mass adsorbed in a single layer is [116, 117] )τω1)(τω1( )τω1)(( τ ττ 4)ω( 2 2 22 1 2 22 2 2 21 2 1 2 2 2 2 1 2,    zeeee z m gmgm s (14) where τ1,2=2{k11+k22±[(k11+k22) 2 -4(k11k22-k12k21)] 1/2 } -1 , τz=(m1 2 g1ee+m2 2 g2ee)[(m1k22m2k21) 2 g1ee+(m1k11-m2k12) 2 g2ee)] -1 . the same expression is valid in the case of two-layer adsorption, but τ1,2 and τz depend on different parameters because the functions gie and rie are different [120]. 3.2. phase noise in rf mems/nems oscillators oscillators, which produce continuous periodic signals from dc power, are important for modern communications systems, due to their versatile applications including timing references and frequency synthesizers. the effects of oscillator phase noise become increasingly destructive with the introduction of new wireless standards based on advanced modulation schemes [125], which makes modeling of rf oscillators phase 372 i. jokić, m. frantlović, z. djurić, m. l. dukić noise in modern wireless communication systems very useful. therefore, the theory of phase noise is being constantly improved [125, 126]. a signal generated by a real oscillator can be expressed by u(t)=a02 -1/2 e j2πf0t e j(t) , where a0 is the amplitude (usually considered as constant [125]), f0 is the carrier frequency, and (t) is the resulting stochastic fluctuation of the phase, caused by noise generating mechanisms in the oscillator constituting components. the spectrum of the signal u(t) is located around the frequency f=f0, and shaped by (t)=e j(t) . therefore, when considering only the spectrum shape, it is convenient to analyze the spectrum translated to the baseband, which is then the spectrum of (t). if the psd of (t) is denoted with s(), the oscillator phase noise (expressed in dbc/hz) is [125] ))ν(log(10)ν( θslosc  (15) ( is the fourier frequency). s() is obtained by using the wiener-khinchin theorem         ττ)τ()ν( πντ22/)τ(σπντ2 θθ 2 deeders jj (16) where r() is the autocorrelation function of (t), and 2 () is the phase jitter variance (the variance of the phase increments) [125]. since (t) is the integration result of stationary frequency noise, the variance 2 (τ) is related to the psd of frequency noise sf() according to the expression [125, 127]      ν )πν( )πντ(sin )ν()τ(σ 2 2 2 υ ds f (17) considering a mems oscillator consisting of a mems mechanical resonator (as a frequency selective element) and sustaining electronics, the total phase fluctuations are caused by noise generation mechanisms in the oscillator's electronic circuit, but also by the resonator mechanical frequency noises. due to the noise induced by dissipation processes in a resonator and sustaining circuits (called the brownian motion noise, or white noise), the phase undergoes diffusion process, with the diffusion constant d. the omnipresent 1/f noise of oscillator components also causes phase fluctuations. the corresponding variances, 2 ,b() and 2 ,1/f(), are given in [125, 126]. by using eq. (17) the variance of the phase increments due to ad noise, 2 ,ad(), can be obtained, applying sf()=(f0/2m) 2 sm(), where sm() is given by eq. (12). we determined the variance 2 ,ad() for single gas single-layer adsorption (by using eqs. (13) and (17)) [122]. in the presence of these noises the corresponding variances are τ2)τ(σ υ 2 ,υ db  , 22 /1,υ τ)τ(σ kf  , 2/)]1(ττ[)τ(σ 1τ/τ 1 2 ,υ    epad (18) where k is related to parameters of the 1/f noise in an oscillator circuit, and p=g1e(n1e)1 2 m1 2 (f0/2m) 2 . assuming that mentioned noise sources are not correlated, the total variance equals the sum of the components that correspond to each of the frequency noise sources. the corresponding total autocorrelation function equals the product of the autocorrelation functions of all noise contributors. the individual spectra are denoted with s,b(), s,1/f() and s,ad(), and they are obtained using eqs. (16) and (18). the rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 373 psd of (t), i.e. s(), is the convolution of the individual power spectra in the frequency domain. the oscillator phase noise, which includes the influence of the resonator ad noise, is then obtained from eq. (15). the component which represents the contribution of the lorentzian ad frequency noise of the resonator to the oscillator's total phase noise is [122]                 ),(γreτ2reτ2)ν( 1 0 1 1,θ az a e dtet a e s z aa tz z a ad (19) where (z,a) is the lower incomplete gamma function, a=pτ1/4, and z=pτ1/4+jωτ, ω=2π. 3.3. results of numerical calculations and discussion by applying the derived theoretic model, we analyzed single layer adsorption on the surface of mems/nems silicon resonator with the nominal resonance frequency of 50 mhz (m=8.18·10 -16 kg, a=8.89·10 -12 m 2 ). fig. 7a shows the dependence of the resonator ad phase noise (lr()=10log(0.5(f0/2m) 2 sm()/2 ) [123]) on the pressure of the gas inside the resonator's housing, at various offset frequencies from the nominal, at t=300 k, for the case of the resonator operating in a single gas atmosphere. the gas is nitrogen [123]. it can be observed that this noise has a low magnitude at near-atmospheric pressures, but becomes significant as the pressure decreases. this observation is very significant when optimization of operating conditions of mems/nems resonators is performed. in a majority of studies resonator tm noise is analyzed and the operating conditions are chosen so to minimize it. this means that low pressure values are chosen at which energy dissipation due to the surrounding medium is low enough, so tm is also reduced. at typical pressure values in evacuated mems/nems resonator packages, ad noise has its maximum, and, therefore, it can become dominant [115, 123]. therefore, the optimization of operating conditions of rf mems/nems resonators in order to minimize their total noise must be performed based on the analysis of all the noises dependent on the ambient pressure and temperature. ad noise becomes increasingly important in such analysis with the increase of resonance frequencies, i.e. with the decrease of resonator dimensions, as can be seen in fig. 7b. ad phase noise of the same resonator, but operating in a two-gas atmosphere, is shown in fig. 7c, as a function of both the gas 1 pressure (the gas 2 pressure is p2=10 3 pa, t=300 k) and the offset frequency. it can be observed that the presence of multiple gases affects resonator ad noise. in [116, 117] it is shown that in a certain pressure and frequency range the magnitude of the ad noise spectrum for two-gas adsorption is lower than for the case of one gas. however, since the decrease does not exist at all frequencies, the effect of the gas mixture composition on the total ad noise in the bandwidth of interest should be observed. the presented theory enables performing the analysis that yields the optimal gas mixture composition at which the resonator ad noise is minimized. the psd s,ad() for a single gas atmosphere at different gas pressures [122] is shown in fig. 7d, for the same example as shown in fig. 7a. the pressure values are chosen: one of them approximates the pressure at which ad noise has its maximum, another one is an order of magnitude lower, and the remaining one an order of magnitude higher. this is the first result that illustrates the spectral dependence of the component of the oscillator phase 374 i. jokić, m. frantlović, z. djurić, m. l. dukić noise that is caused by the ad frequency noise. its influence on oscillator noise must be analyzed together with the other two components (s,b() and s,1/f()), by determining the total psd of (t), i.e. s() (as the convolution in the frequency domain of the three psds), and subsequently (based on eq. (15)) obtaining the oscillator phase noise, which includes the influence of the resonator ad noise. fig. 7 a) dependence of the mems/nems resonator ad phase noise (single gas single layer adsorption) on gas pressure and offset frequency (t=300 k, nitrogen, f0=50 mhz), b) ad phase noise (single gas single layer adsorption) as a function of the resonance frequency (p=0.01 pa), c) ad phase noise for a two-gas atmosphere, as a function of the gas 1 pressure and offset frequency (pressure of the gas 2 is p2=10 3 pa), d) the calculated psd (eq. (19)) of the oscillator phase noise constituent caused by ad process of a single gas of pressure p. 4. conclusion rf components based on mems and nems structures are expected to have an important role in achieving new levels of integration and reconfigurability of transceivers in future mobile terminals. mems/nems resonators have generated a significant interest rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 375 because of their ultra-high resonance frequencies, small size, very low operating power, high quality factors and possibility of integration with silicon ic technologies. rf mems resonators have already become a competitive alternative to conventional components used for realization of rf filtering and frequency synthesis in wireless transceivers. significant results achieved after the year 2000 (especially in terms of better temperature stability, better long-term stability, improved packaging) have enabled the commercialization of both piezoelectric and capacitive mems resonators. due to unique mechanical properties (enabling high resonance frequencies), especially their mechanical compliance needed for high frequency tunability, nems resonators, including 2d (graphene) resonators, provide a promising basis for future ultrafast communication systems. the studies in the field of nems are at the forefront of physical and engineering sciences. however, a number of issues need to be addressed in order to enable practical applications. there are problems that remain to be solved on both theoretic and experimental level. most developments in this field are currently confined to theoretic models, simulations and laboratory experiments, with nems components in a prototype stage, at best. noise generation mechanisms in mems and nems resonant structures require further investigation in order for their ultimate performances to be determined. the extremely low mass and their large surface-to-volume ratio make these resonators highly sensitive to added mass. therefore, stochastic adsorbed mass fluctuations influence the fluctuations of mems/nems resonator parameters, i.e. they are a source of adsorptiondesorption (ad) noise which contributes to the resonator total noise. by analyzing the ad noise that becomes prominent as the dimensions and mass of the components decrease, we contributed to the theory of noise in mems and nems resonators, and subsequently to the theory of phase noise in oscillators using rf mems/nems resonators as frequency determining elements. the theoretical model of ad phase noise enables prediction of ad noise during the design of such components in order to identify the dominant noise generating mechanism, and then optimization of the resonator parameters and operating conditions in terms of noise minimization. acknowledgement. this work was funded by the serbian ministry of education, science and technological development (project tr 32008) and by the serbian academy of sciences and arts (project f/150). the authors would like to express their gratitude to prof. dr. gradimir milovanović, full member of the serbian academy of sciences and arts, for his contribution in solving mathematical problems. references [1] j. basu and t. k. bhattacharyya, "microelectromechanical resonators for radio frequency communication applications", microsystem technologies, vol. 17, pp. 1557-1580, 2011. [2] b. kim, m. a. hopcroft and r. n. candler, "silicon mems resonators for timing applications", in microelectronics to nanoelectronics materials, devices & manu-facturability, a. b. kaul, ed., crc press, 2012, pp. 79-108. [3] j. t. m. van beek and r. puers, "a review of mems oscillators for frequency reference and timing applications", j. micromech. microeng., vol. 22, pp. 013001 1-35, 2012. 376 i. jokić, m. frantlović, z. djurić, m. l. dukić [4] c. t.-c. nguyen, "vibrating rf mems overview: applications to wireless communications", in proceedings of spie: micromachining and microfabrication process technology, vol. 5715, photonics west: moems-mems 2005, san jose, california, 2005, pp. 11-25. [5] d. e. serrano, r. tabrizian and f. ayazi, "tunable piezoelectric mems resonators for real-time clock", in proceedings of the joint conference of the ieee international frequency control and the european frequency and time forum (fcs), san fransisco, ca, 2011, pp. 1-4. [6] i. voiculescu and a. n. nordin, "acoustic wave based mems devices, development and applications", in: microelectromechanical systems and devices, n. islam, ed., intech, 2012, chapter 4, pp. 65-86. [7] r. tabrizian, m. rais-zadeh and f. ayazi, "effect of phonon interactions on limiting the f·q product of micromechanical resonators", in proceedings of the international solid-state sensors, actuators and microsystems conference (transducers 2009), denver, co, 2009, pp. 2131–2134. [8] c. zuo, j. van der spiegel and g. piazza, "1.05-ghz cmos oscillator based on lateral field-excited piezoelectric ain contour mode mems resonators", ieee trans. ultrason. ferroelectr. freq. control, vol. 57, pp. 82-87, 2010. [9] g. piazza, p. j. stephanou, j. m. porter, m. b. j. wijesundara and a. p. pisano, "low motional resistance ring-shaped contour-mode aluminium nitride piezoelectric micromechanical resonators for uhf applications", in proceedings of the 18th ieee international conference on micro electromechanical systems (mems 2005), 2005, pp. 20-23. [10] m. rinaldi, c. zuniga and g. piazza, "5-10 ghz aln contour-mode nanoelectromechanical resonators", in proceedings of the 22nd ieee international conference on micro electro mechanical systems (mems 2009), 2009, pp. 916-919. [11] h. m. lavasani, p. wanling, b. harrington, r. abdolvand and f. ayazi, "a 76 db 1.7 ghz 0.18 μm cmos tunable tia using broadband current pre-amplifier for high frequency lateral micromechanical oscillators", ieee journal of solid-state circuits, vol. 46, pp. 224-235, jan 2011. [12] w.-c. chen, w. fang and s.-s. li, "quasi-linear frequency tuning for cmos-mems resonators", in proceedings of the 24th ieee international conference on micro electro mechanical systems (mems 2011), 2011, pp. 784-787. [13] g. k. ho, k. sundaresan, s. pourkamali and f. ayazi, "low-motional-impedance highly-tunable i2 resonators for temperature compensated reference oscillators", in proceedings of the ieee micro electro mechanical systems conference (mems‘05), miami, fl, 2005, pp. 116-120. [14] h. g. barrow, t. l. naing, r. a. schneider, t. o. rocheleau, v. yeh, z. ren and c. t.-c. nguyen, "a real-time 32.768-khz clock oscillator using a 0.0154-mm2 micromechanical resonator frequencysetting element", in proceedings of the ieee international freq. control symposium, baltimore, md, 2012, pp. 1-6. [15] z. hao, s. pourkamali and f. ayazi, "vhf single-crystal silicon elliptic bulk-mode capacitive disk resonators–part i: design and modeling", j. microelectromech. syst., vol. 13, pp. 1043–1053, 2004. [16] j. e. y. lee and a. a. seshia, "5.4-mhz single-crystal silicon wine glass mode disk resonator with quality factor of 2 million", sens. actuators a, vol. 156, pp. 28–35, 2009. [17] j. wang, j. e. butler, t. feygelson and c. t.-c. nguyen, "1.51-ghz polydiamond micromechanical disk resonator with impedance-mismatched isolating support", in proceedings of the 17th ieee international conference on micro electro mechanical systems, maastricht, the netherlands, 2004, pp. 641-644. [18] frederic nabki, "silicon carbide micro-electromechanical resonators for highly integrated frequency synthesizers", phd thesis, mcgill university, montreal, canada, 2009. [19] k. wang, a.-c. wong and c. t.-c. nguyen, "vhf free–free beam high-q micromechanical resonators", ieee/asme j. microelectromech. syst., vol. 9, pp. 347-360, 2000. [20] s. pourkamali and f. ayazi, "soi-based hf and vhf single-crystal silicon resonators with sub-100 nanometer vertical capacitive gaps", in proceedings of the 12th international conference on solid state sensors, actuators and microsystems (transducers ‘03), boston, 2003, pp. 837-840. [21] y. naito, p. helin, k. nakamura, j. de coster, b. guo, l. haspeslagh, k. onishi and h. tilmans, "high-q torsional mode si triangular beam resonators encapsulated using sige thin film", in proceedings of the ieee international electron devices meeting, san francisco, 2010, pp. 154–157. [22] t. j. cheng and s. a. bhave. "high-q, low impendance polysilicon resonators with 10 nm air gaps", in proceedings of the 23rd ieee international conference on micro electro mechanical systems (mems 2010), wanchai, hong kong, 2010, pp. 695-698. rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 377 [23] v. kaajakari, t. mattila, a. oja, j. kiihamäki and h. seppä, "square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications", ieee electron device lett., vol. 25, pp. 173–175, 2004. [24] g. wu, d. xu, b. xiong and y. wang, "a high-performance bulk mode single crystal silicon microresonator based on a cavity-soi wafer, j. micromech. microeng., vol. 22, pp. 025020 1-8, 2012. [25] y.-w. lin, s.-s. li, z. ren and c. t.-c. nguyen, "low phase noise array-composite micromechanical wine-glass disk oscillator", in proceedings of the ieee international electron devices meeting, washington dc, 2005, pp. 287-290. [26] m. u. demirci, m. a. abdelmoneum and c. t.-c. nguyen, "mechanically corner-coupled square microresonator array for reduced series motional resistance", in proceedings of the 12th international conference on solid-state sensors & actuators (transducers’03), boston, massachussets, 2003, pp. 955-958. [27] s.-s. li, y.-w. lin, y. xie, z. ren and c. t.-c. nguyen, "micromechanical "hollow-disk" resonators", in proceedings of the 17th ieee international conference on.micro electro mechanical systems (mems 2004), 2004, pp. 821-824. [28] p. ovartchaiyapong, l. m. a. pascal, b. a. myers, p. lauria and a. c. bleszynski jayich, "high quality factor single-crystal diamond mechanical resonators", appl. phys. lett., vol. 101, pp. 163505 1-4, 2012. [29] j. e.-y. lee and a. a. seshia, "square wine glass mode resonator with quality factor of 4 million", in proceedings of the 7th ieee conference on sensors, lecce, italy, pp. 1257–1260, 2008. [30] d. weinstein and s. a. bhave, "internal dielectric transduction in bulk-mode resonators", j. microelectromech. syst., vol. 18, pp. 1401–1408, 2009. [31] r. henry and d. kenny, "comparative analysis of mems, programmable, and synthesized frequency control devices versus traditional quartz based devices", in proceedings of the ieee frequency control symposium, honolulu, hi, 2008, pp. 396–401. [32] j. l. lopez, j. verd, j. teva, g. murillo, j. giner, f. torres, a. uranga, g. abadal and n. barniol, "integration of rf-mems resonators on submicrometric commercial cmos technologies", j. micromech. microeng., vol. 19, pp. 015002 1-10, 2009. [33] a. n. nordin and m. e. zaghloul, "modeling and fabrication of cmos surface acoustic wave resonators", ieee trans. on microwave theory tech., vol. 55, pp. 992-1001, 2007. [34] h. campanella, e. cabruja, e., j. montserrat, a. uranga, n. barniol and j. esteve, "thin-film bulk acoustic wave resonator floating above cmos substrate", ieee electron device lett., vol. 29, pp. 28-30, 2008. [35] m. hara, j. kuypers, t. abe and m. esashi, "mems based thin film 2 ghz resonator for cmos integration", in proceedings of ieee mtt-s international microwave symposium digest, philadelphia, pa, 2003, vol. 3, pp. 1797-1800. [36] b. p. otis and j. m. rabaey, "a 300-w 1.9-ghz cmos oscillator utilizing micromachined resonators", ieee j. solid-state circuits, vol. 38, pp. 1271-1274, 2003. [37] j. s. wang and k. m. lakin, "sputtered aln films for bulk-acoustic-wave devices", in proceedings of ultrasonics symposium, chicago, il, 1981, pp. 502-505. [38] m. a. dubois, j. f. carpentier p. vincent, c. billard, g. parat, c. muller, p. ancey and p. conti, "monolithic above-ic resonator technology for integrated architectures in mobile and wireless communication", ieee j. solid-state circuits, vol. 41, pp. 7–16, 2006. [39] b. p. harrington, m. shahmohammadi and r. abdolvand, "toward ultimate performance in ghz mems resonators: low impedance and high q", in proceedings of the 23rd ieee international conference on micro electro mechanical systems (mems), wanchai, hong kong, 2010, pp. 707-710. [40] l. khine, "performance parameters of micromechanical resonators", phd. thesis, national university of singapore, 2010. [41] j. wang, z. ren and c. t.-c. nguyen, "1.156-ghz self-aligned vibrating micromechanical disk resonator", ieee trans. ultrason. ferroelect. freq. control, vol. 51, pp. 1607-1628, 2004. [42] k. sundaresan, g. k. ho, s. pourkamali and f. ayazi, "electronically temperature compensated silicon bulk acoustic resonator reference oscillators", ieee j. solid-state circuits, vol. 42, pp. 1425–1434, 2007. [43] j. salvia, m. messana, m. ohline, m. a. hopcroft, r. melamud, s. chandorkar, h. k. lee, g. bahl, b. murmann and t. w. kenny, "exploring the limits and practicality of q-based temperature compensation for silicon resonators", in proceedings of international electron devices meeting, san francisco, ca, 2008, pp. 1-4. 378 i. jokić, m. frantlović, z. djurić, m. l. dukić [44] w.-t. hsu and c. t.-c. nguyen, "stiffness-compensated temperature insensitive micro-mechanical resonators", in proceedings of ieee international micro electro mechanical systems conference, las vegas, nevada, 2002, pp. 731–734. [45] a. k. samarao and f. ayazi, "temperature compensation of silicon micromechanical resonators via degenerate doping", in proceedings of ieee international electron devices meeting. baltimore, 2009, pp. 1–4. [46] a. k. samarao, g. casinovi and f. ayazi, "passive tcf compensation in high q silicon micromechanical resonators", in proceedings of the 23nd ieee international conference on microelectromechanical systems, hong kong, 2010, pp. 116–119. [47] r. melamud, s. a. chandorkar, k. bongsang, h. k. lee, j. c. salvia, g. bahl, m. a. hopcroft and t. w. kenny, "temperature insensitive composite micromechanical resonators", j. microelectromechanical systems, vol. 18, pp. 1409–1419, 2009. [48] h. k. lee, m. a. hopcroft, r. k. melamud, b. kim, j. salvia, s. chandorkar,ž and t. w. kenny, "electrostatic tuning of hermetically encapsulated composite resonators", in proceedings of ieee solid state sensor, actuator and microsystems workshop, hilton head, 2008, pp. 48–51. [49] j. h. seo, k. s. demirci, a. byun, s. truax and o. brand, "novel temperature compensation scheme for microresonators based on controlled stiffness modulation", in proceedings of international conference on solid-state sensors, actuators and microsystems (transducers 2007), 2007, pp. 2457– 2360. [50] h. wan-thai, j. r. clark and c. nguyen, "mechanically temperature-compensated flexural-mode micromechanical resonators", in proceedings of ieee international electron devices meeting, san francisco, ca, 2000, pp. 399-402. [51] f. nabki, t. a. dusatko and m. n. el-gamal, "frequency tunable silicon carbide resonators for mems above ic", in proceedings of ieee custom integrated circuits conference, san jose, ca, 2008, pp. 185-188. [52] w. pang, h. zhang, h. yu, c.-y. lee and e. s. kim, "electrical frequency tuning of film bulk acoustic resonator", j. microelectromechanical systems, vol. 16, pp. 1303-1313, 2007. [53] m. lutz, a. partridge and p. gupta, n. buchan, e. klaassen, j. mcdonald and k. petersen, "mems oscillators for high volume commercial applications", in proceedings of the 14th ieee international conference on solid state sensors, actuators and microsystems, 2007, pp. 49–52. [54] w. t. hsu, "reliability of silicon resonator oscillators", in proceedings of ieee international frequency control symposium and exposition, miami, fl, 2006, pp. 389–392. [55] m. lutz, j. mcdonald, p. gupta, a. partridge, c. dimpel and k. petersen, "new mems timing references for automotive applications", in advanced microsystems for automotive applications, j. valldorf, w. gessner, eds., berlin: springer, 2007, pp. 279-289. [56] y. w. lin, s. lee, z. ren and c. t.-c. nguyen, "series-resonant micromechanical resonator oscillator", in proceedings of ieee international electron devices meeting, washington, dc, 2003, pp. 39.4.1–39.4.4. [57] t. mattila, o. jaakkola, j. kiihamaki, j. karttunen, t. lamminmaki, p. pantakari, a. oja, h. seppa, h. kattelus and i. tittonen, "14 mhz micromechanical oscillator", sens. actuators a, vol. 97-98, pp. 497-502, 2002. [58] m. sworowski, f. neuilly, b. legrand, a. summanwar, p. philippe and l. buchaillot, "fabrication of 24-mhz-disk resonators with silicon passive integration technology", ieee electron device lett., vol. 31, pp. 23–25, 2010. [59] h. lavasani, a. k. samarao, g. casinovi and f. ayazi, "a 145 mhz low phase-noise capacitive silicon micromechanical oscillator", in proceedings of international electron devices meeting, san francisco, ca, 2008, pp. 675–678. [60] p. rantakari, v. kaajakari, t. mattila, j. kiihamoki, a. oja, i. tittonen and h. seppa, "low noise, low power micromechanical oscillator", in proceedings of the 13th international conference on solidstate sensors, actuators and microsystems (transducers), seoul, 2005, vol. 2, pp. 2135–2138. [61] m. akgul, b. kim, l. w. hung, y. lin, w.-c. li, w.-l. huang, i. gurin, a. borna and c. t.-c. nguyen, "oscillator far-from carrier phase noise reduction via nano-scale gap tuning of micromechanical resonators", in proceedings of the solid-state sensors, actuators and microsystems conference (transducers), denver, co, 2009, pp. 798–801. [62] m. ziaei-moayyed, j. hsieh, j.-w. p. chen, e. p. quevy, d. elata and r. t. howe, "higher-order mode internal electrostatic transduction of a bulk-mode ring resonator on a quartz substrate", in rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 379 proceedings of the 17th international solid-state sensors, actuators and microsystems conference (transducers), denver, co, 2009, pp. 2338–2341. [63] v. kaajakari, t. mattila, j. kiihamaki, h. kattelus, a. oja and h. seppa, "nonlinearities in singlecrystal silicon micromechanical resonators", in proceedings of the 12th international conference on solid state sensors, actuators and microsystems, boston, ma, 2003, pp. 1574–1577. [64] m. u. demirci and c. nguyen, "mechanically corner-coupled square microresonator array for reduced series motional resistance", ieee/asme j. microelectromechanical systems, vol. 15, pp. 1419-1436, dec. 2006. [65] c.t.-c. nguyen, "mems technology for timing and frequency control", ieee trans. ultrason. ferroelect. freq. control, vol. 54, pp. 251-270, 2007. [66] y. t. yang, k. l. ekinci, x. m. h. huang, l. m. schiavone, m. l. roukes, c. a. zorman and m. mehregany, "monocrystalline silicon carbide nanoelectromechanical systems", appl. phys. lett., vol. 78, pp. 162-164, 2001. [67] h. a. c. tilmans, m. elwenspoek and j. h. j. fluitman, "micro resonant force gauges", sens. actuators a, vol. 30, pp. 35-53, 1992. [68] c. chen, s. lee, v. v. deshpande, g.-h. lee, m. lekas, k. shepard and j. hone, "graphene mechanical oscillators with tunable frequency", nat. nanotechnol., vol. 8, pp. 923-927, 2013. [69] a. n. cleland and m. l. roukes, "fabrication of high frequency nanometer scale mechanical resonators from bulk si crystals", appl. phys. lett., vol. 69, pp. 2653-2655, 1996. [70] k. l. ekinci and m. l. roukes, "nanoelectromechanical systems", rev. sci. instrum., vol. 76, pp. 061101, 2005. [71] x. l. feng, r. r. he, p. d. yang and m. l. roukes, "very high frequency silicon nanowire electromechanical resonators", nano lett., vol. 7, pp. 1953-1959, 2007. [72] x. m. h. huang, x. l. feng, c. a. zorman, m. mehregany and m. l. roukes, "vhf, uhf and microwave frequency nanomechanical resonator", new j. phys., vol. 7, pp. 247 1-15, 2005. [73] d. w. carr, s. evoy, l. sekaric, h. g. craighead and j. m. parpia, "measurements of mechanical resonance and losses in nanometer scale silicon wires", appl. phys. lett., vol. 75, pp. 920-922, 1999. [74] x. m. h. huang, c. a. zorman, m. mehregany and m. l. roukes, "nanodevice motion at microwave frequencies", nature, vol. 421, pp. 496-496, 2003. [75] a. n. cleland, m. pophristic and i. ferguson, "single-crystal aluminum nitride nanomechanical resonators", appl. phys. lett., vol. 79, pp. 2070-2072, 2001. [76] l. sekaric, j. m. parpia, h. g. craighead, t. feygelson, b. h. houston and j. e. butler, "nanomechanical resonant structures in nanocrystalline diamond", appl. phys. lett., vol. 81, pp. 4455-4457, 2002. [77] r. b. karabalin, m. h. matheny, x. l. feng, e. defaÿ, g. le rhun, c. marcoux, s. hentz, p. andreucci and m. l. roukes, "piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films", appl. phys. lett., vol. 95, pp. 103111 1-3, 2009. [78] a. husain, j. hone, h. w. ch. postma, x. m. h. huang, t. drake, m. barbic, a. scherer and m. l. roukes,"nanowire-based very-high-frequency electromechanical resonator", appl. phys. lett., vol. 83, pp. 1240-1242, 2003. [79] t. f. li, y. pashkin, o. astafiev, y. nakamura, j. s. tsai and h. im, "high-frequency metallic nanomechanical resonators", appl. phys. lett., vol. 92, pp. 043112 1-3, 2008. [80] n. a. melosh, a. boukai, f. diana, b. gerardo, a. badolato, p. m. petroff and j. r. heath, "ultrahighdensity nanowire lattices and circuits", science, vol. 300, pp. 112-115, 2003. [81] x. l. feng, m. h. matheny, c. a. zorman, m. mehregany and m. l. roukes, "low voltage nanoelectromechanical switches based on silicon carbide nanowires", nano lett., vol. 10, pp. 28912896, 2010. [82] o. vazquez-mena, g. villanueva, v. savu, k. sidler, m. a. f. van den boogaart and j. brugger, "metallic nanowires by full wafer stencil lithography", nano lett., vol. 8, pp. 3675-3682, 2008. [83] r. he, d. gao, r. fan, a. i. hochbaum, c. carraro, r. maboudian and p. yang, "si nanowire bridges in microtrenches: integration of growth into device fabrication", adv. mater., vol. 17, pp. 2098-2102, 2005. [84] r. r. he, x. l. feng, m. l. roukes and p. d. yang, "self-transducing silicon nanowire electromechanical systems at room temperature", nano lett., vol. 8, pp. 1756-1761, 2008. [85] c. regal, j. teufel and k. lehnert, "measuring nanomechanical motion with a microwave cavity interferometer", nat. physics, vol. 4, pp. 555–560, 2008. 380 i. jokić, m. frantlović, z. djurić, m. l. dukić [86] s. t. bartsch, a. lovera, d. grogg and a. m. ionescu, "nanomechanical silicon resonators with intrinsic tunable gain and sub-nw power consumption", acs nano, vol. 6, pp. 256–264, 2012. [87] b. m. zwickl, w. e. shanks, a. m. jayich, c. yang, a. c. bleszynski jayich, j. d. thompson and j. g. e. harris, "high quality mechanical and optical properties of commercial silicon nitride membranes, appl. phys. lett., vol. 92, pp. 103125 1-3, 2008. [88] s. iijima, "helical microtubules of graphitic carbon", nature, vol. 354, pp. 56-58, 1991. [89] s. m. huang, x. y. cai and j. liu, "growth of millimeter-long and horizontally aligned singlewalled carbon nanotubes on flat substrates", j. amer. chem. soc., vol. 125, pp. 5636-5637, 2003. [90] h. w. zhu, c. l. xu, d. h. wu, b. q. wei, r. vajtai and p. m. ajayan, "direct synthesis of long single-walled carbon nanotube strands", science, vol. 296, pp. 884-886, 2002. [91] p. poncharal, z. l. wang, d. ugarte and w. a. de heer, "electrostatic deflections and electromechanical resonances of carbon nanotubes", science, vol. 283, pp. 1513-1516, 1999. [92] v. sazonova, y. yaish, h. üstünel, d. roundy, t. a. arias and p. l. mceuen, "a tunable carbon nanotube electromechanical oscillator", nature, vol. 431, pp. 284-287, 2004. [93] vera sazonova, "a tunable carbon nanotube resonator", phd. thesis, cornell university, 2006. [94] h. b. peng, c. w. chang, s. aloni, t. d. yuzvinsky and a. zettl, "ultrahigh frequency nanotube resonators", phys. rev. lett., vol. 97, pp. 087203 1-4, 2006. [95] d. garcia-sanchez, a. san paulo, m. j. esplandiu, f. perez-murano, l. forró, a. aguasca and a. bachtold, "mechanical detection of carbon nanotube resonator vibrations", phys. rev. lett., vol. 99, pp. 085501 1-4, 2007. [96] e. a. laird, f. pei, w. tang, g. a. steele and l. p. kouwenhoven, "a high quality factor carbon nanotube mechanical resonator at 39 ghz", nano lett., vol. 12, pp. 193–197, 2011. [97] chung-chiang wu, "carbon based nanoelectromechanical resonators", phd. thesis, university of michigan, 2012. [98] m. imboden and p. mohanty, "dissipation in nanoelectromechanical systems", physics reports, vol. 534, pp. 89–146, 2014. [99] b. lassagne, d. garcia-sanchez, a. aguasca and a. bachtold, "ultrasensitive mass sensing with a nanotube electromechanical resonator", nano lett., vol. 8, pp. 3735–3738, 2008. [100] a. huttel, g. steele, b. witkamp, m. poot, l. kouwenhoven and h. van der zant, "carbon nanotubes as ultrahigh quality factor mechanical resonators", nano lett., vol. 9, pp. 2547–2552, 2009. [101] benjamin jose aleman, "carbon nanotube and graphene nanoelectromechanical systems", phd. thesis, university of california, berkeley, 2011. [102] a. k. geim, k. s. novoselov, "the rise of graphene", nat. mater., vol. 6, pp. 183–191, 2007. [103] j. s. bunch, a. m. van der zande, s. s. verbridge, i. w. frank, d. m. tanenbaum, j. m. parpia, h. g. craighead and p. l. mceuen, "electromechanical resonators from graphene sheets", science, vol. 315, pp. 490-493, 2007. [104] d. garcia-sanchez, a. m. van der zande, a. san paulo, b. lassagne, p. l. mceuen a. bachtold, "imaging mechanical vibrations in suspended graphene sheets", nano lett., vol. 8, pp. 1399-1403, 2008. [105] c. y. chen, s. rosenblatt, k. i. bolotin, w. kalb, p. kim, i. kymissis, h. l. stormer, t. f. heinz and j. hone, "performance of monolayer graphene nanomechanical resonators with electrical readout", nat. nanotech., vol. 4, pp. 861-867, 2009. [106] r. a. barton, b. ilic, a. m. van der zande, w. s. whitney, p. l. mceuen, j. m. parpia and h. g. craighead, "high, size-dependent quality factor in an array of graphene mechanical resonators", nano lett., vol. 11, pp. 1232–1236, 2011. [107] y. s. greenberg, y. a. pashkin and e. il'ichev, "nanomechanical resonators", physics – uspekhi, vol. 55, pp. 382-407, 2012. [108] z. djurić, "mechanisms of noise sources in microelectromechanical systems", introductory invited paper, microelectron. reliab., vol. 40, pp. 919-932, 2000. [109] f. l. walls and j. r. vig, "fundamental limits on the frequency stabilities of crystal oscillators", ieee trans. ultrason. ferroel. freq.control, vol. 42, pp. 576-589, 1995. [110] j. r. vig and y. kim, "noise in mems resonators", ieee trans. ultrason. ferroelect. freq. control, vol. 46, pp. 1558-1565, 1999. [111] a. n. cleland and m. l. roukes, "noise processes in nanomechanical resonators", j. appl. lett., vol. 92, pp. 2758-2769, 2002. rf mems/nems resonators for wireless communication systems and adsorption-desorption phase noise 381 [112] z. djurić, "noise in nanoelectromechanical systems", invited paper, in proceedings of the 1st international workshop on nanoscience & nanotechnology iwon 2005, belgrade, serbia and montenegro, 2005, pp. 33-36. [113] z. djurić, "noise in microsystems and semiconductor photodetectors", in proceedings of the xliv conference etran, sokobanja, serbia, 2000, pp. 9-16. [114] y. k. yong and j. r. vig, "resonator surface contamination – a cause of frequency fluctuations?", ieee trans. ultrason. ferroelect. control, vol. 36, pp. 452-458, 1989. [115] z. djurić, o. jakšić and d. randjelović, "adsorption–desorption noise in micromechanical resonant structures", sens. actuators a, vol. 96, pp. 244-251, 2002. [116] z. djurić, i. jokić, m. frantlović, o. jakšić and d. vasiljević-radović, "adsorbed mass and resonant frequency fluctuations of a microcantilever caused by adsorption and desorption of particles of two gases", in proceedings of the 24th international conference on microelectronics miel 2004, vol. 1, niš, serbia, 2004, pp. 197-200. [117] z. djurić, i. jokić, m. frantlović and o. jakšić, "fluctuations of the number of particles and mass adsorbed on the sensor surface surrounded by a mixture of an arbitrary number of gases", sens. actuators b, vol. 127, pp. 625-631, 2007. [118] i. jokić, z. djurić, m. frantlović, k. radulović, p. krstajić and z. jokić, "fluctuations of the number of adsorbed molecules in biosensors due to stochastic adsorption–desorption processes coupled with mass transfer", sens. actuators b, vol. 166–167, pp. 535–543, 2012. [119] m. frantlović, i. jokić, z. djurić and k. radulović, "analysis of the competitive adsorption and mass transfer influence on equilibrium mass fluctuations in affinity-based biosensors", sens. actuators b, vol. 189, pp. 71-79, 2013. [120] z. djurić, i. jokić, m. frantlović and k. radulović, "two-layer adsorption and adsorbed mass fluctuations on micro/nanostructures", microel. eng., vol. 86, pp. 1278-1281, 2009. [121] z. djurić, i. jokić, m. djukić and m. frantlović, "fluctuations of the adsorbed mass and the resonant frequency of vibrating mems/nems structures due to multilayer adsorption", microel. eng., vol. 87, pp. 1181-1184, 2010. [122] i. jokić, m. frantlović and z. djurić, "rf mems and nems components and adsorption-desorption induced phase noise", in proceedings of the 29th international conference on microelectronics miel 2014, belgrade, serbia, 2014, pp. 117-124. [123] i. jokić, m. frantlović, z. djurić and m. dukić, "adsorption-desorption phase noise in rf mems/nems resonators", in proceedings of the 10th international conference on telecommunications in modern satellite, cable and broadcasting services telsiks, niš, serbia, 2011, pp. 114-117. [124] k.m. van vliet and j.r. fasset, "fluctuations due to electronic transitions and transport in solids", in fluctuation phenomena in solids, r. e. burgess, ed., new york and london: academic press, 1965, pp. 267-354. [125] s. yousefi, t. eriksson and d. kuylenstierna, "a novel model for simulation of rf oscillator phase noise", in proceedings of the ieee radio and wireless symposium, new orleans, 2010, pp.428-431. [126] g. v. klimovitch, "near-carrier oscillator spectrum due to flicker and white noise", in proceedings of the ieee international symposium on circuits and systems iscas 2000, vol. 1, geneva, 2000, pp.703-706. [127] m. j. buckingham, noise in electronic devices and systems, ellis horwood ltd., 1983. 10215 facta universitatis series: electronics and energetics vol. 35, no 2, june 2022, pp. 283-300 https://doi.org/10.2298/fuee2202283s © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper optimization of the 3p keys kernel parameters by minimizing the ripple of the spectral characteristic nataša savić, zoran milivojević, zoran veličković academy of applied technical and preschool studies, niš, serbia abstract. the ideal interpolation kernel is described by the sinc function, and its spectral characteristic is the box function. due to the infinite length of the ideal kernel, it is not achievable. therefore, convolutional interpolation kernels of finite length, which should better approximate the ideal kernel in a specified interval, are formed. the approximation function should have a small numerical complexity, so as to reduce the interpolation execution time. in the scientific literature, great attention is paid to the polynomial kernel of the third order. however, the time and spectral characteristic of the third-order polynomial kernels differs significantly from the shape of the ideal kernel. therefore, the accuracy of cubic interpolation is lower. by optimizing the kernel parameters, it is possible to better approximate the ideal kernel. this will increase the accuracy of the interpolation. the first part of the paper describes a three-parameter (3p) keys interpolation kernel, r. after that, the algorithm for optimizing the parameters of the 3p keys kernel, is shown. first, the kernel is disassembled into components, and then, over each kernel component, fourier transform is applied. in this way the spectral characteristic of the 3p keys kernel, h, was determined. then the spectral characteristic was developed in the taylor series, ht. with the condition for the elimination of the members of the taylor series, which greatly affect the ripple of the spectral characteristic, the optimal kernel parameters (αopt, βopt, opt) were determined. the second part of the paper describes an experiment, in which the interpolation accuracy of the 3p keys kernel, was tested. parametric cubic convolution (pcc) interpolation, with the 3p kernel, was performed over the images from the test database. the test database is created with standard test images, which are intensively used in digital image processing. by analyzing the interpolation error, which is represented by the mean square error, mse, the accuracy of the interpolation was determined. the results (αopt, βopt, opt, msemin) are presented on tables and graphs. detailed comparative analysis showed higher interpolation accuracy with the proposed 3p keys interpolation kernel, compared to the interpolation accuracy with, 1p keys and 2p keys interpolation kernels. finally, the numerical values of the optimal kernel parameters, which are determined by the optimization algorithm proposed in this paper, were experimentally verified. key words: convolution, interpolation, interpolation kernel, pcc interpolation, keys kernel received november 23, 2021; received in revised form april 5, 2022 corresponding author: nataša savić academy of applied technical and preschool studies, generala milojka lešjanina 39, 18000 niš, serbia e-mail: natasa.savic@akademijanis.edu.rs 284 n. savić, z. milivojević, z. veličković 1. introduction interpolation is the process of estimating intermediate values between discrete samples of a continuous signal. among other things, interpolation can be realized by applying a convolution between a discrete signal and a continuous interpolation kernel. the interpolation kernel significantly affects the accuracy and time execution of interpolation [1]. for interpolation of band-limited signals, the ideal interpolation kernel is of the form sin(x)/x (in the notation sinc) where -∞ ≤ x ≤ +∞ [1, 2]. the spectral characteristic of the sinc interpolation kernel is a rectangular function, hsinc. the sinc kernel cannot be practically realized because it has infinite limits. for this reason, there is a need to truncate the sinc interpolation kernel to a finite length. as a consequence of the truncated sinc kernel, its spectral characteristic deviates from the ideal, rectangular, characteristic, which leads to: a) ripple in the passband and stopband, and b) finite slope in the transition band. the idea is to approximate the truncated sinc interpolation kernel with a low-degree polynomial function. in this way, the interpolation kernel has a small numerical complexity, and thus, allows a higher interpolation speed. these features of kernel are especially important when implemented in real-time systems. signal interpolation using finite length interpolation kernels is realized by applying convolution. a polynomial zeroth-degree kernel allows interpolation by rounding to the nearest-neighbor [3, 4]. nearest-neighbor interpolation is the most efficient in terms of computational speed, but in doing so, the largest interpolation error is generated. a linear, first-degree interpolation kernel is described in [5]. a quadratic, second-degree interpolation kernel is described in [3, 6]. a cubic, third-degree interpolation kernel, intended for parametric cubic convolution, pcc, is described in [1, 5]. using numerical examples, it has been shown that cubic convolution is more precise than nearest-neighbor and linear interpolation [7 9]. the parameterization of the cubic interpolation kernel, by introducing the kernel parameter α, is shown in [1]. the paper [1] is one of the basic papers in the field of interpolation in digital image processing. later, in the scientific literature, the parametric interpolation kernel from [1] was named, in honor of the author, the 1p keys interpolation kernel. by changing the value of the kernel parameter α, the characteristics of the kernel can be changed and, in this way, adjusted to the corresponding signal that is interpolated. the process of changing the kernel parameter for customization is called parameter optimization. in [1], the optimization of the parameter α was performed by minimizing the interpolation error by developing the error function into a taylor series in f = 0 (maclaurin series). in this way, it is shown that the optimal value of the parameter αopt = -0.5. the ripple of the spectral characteristic is reduced by eliminating the members of the taylor series that predominantly influence on the ripple. in [10], the ripple of the spectral characteristic was reduced by eliminating the members of the taylor series that affect on the concavity of the spectral characteristic. in [11], the reduction of ripple of the spectral characteristic was achieved with α = -0.5. the construction of a two-parameter interpolation kernel is shown in [12, 13]. this kernel is based on the extended parameterization of the 1p keys kernel [1]. in the scientific literature, this kernel is called the 2p keys kernel. optimal values of kernel parameters (αopt = 0.1, βopt = 0.2975) in estimating the fundamental frequency of the speech signal determined in [14]. further expansion of parameterization, in order to improve the characteristics of the kernel, led to the construction of 3p keys kernel [15]. the optimal values of kernel parameters in the estimates of the fundamental frequency of the speech signal are αopt = 1.7, βopt = -4.7, γopt = -3.8. a detailed analysis of the error estimate, presented using mse, optimization of the 3p keys kernel parameters ... 285 shows a higher accuracy of estimation using 3p kernels compared to the use of 1p keys and 2p keys kernels [15]. in the paper [16] the results of precision of the interpolation of audio signals, which was realized using the 3p keys kernel [15], are presented. audio test signals were acquired by recording g tones (g1 g7) on a steinway b concert piano. a detailed comparative analysis showed that the interpolation error, when the 3p keys kernel was used, was compared to the following: a) 1p keys kernel, 7.374 times smaller, and b) 2p keys kernels, 2.4166 times smaller. encouraged by the results of the papers, which unequivocally indicate the fact that increasing the number of interpolation kernel parameters reduces the interpolation error, the authors of this paper performed optimization of 3p keys kernel parameters, in order to increase similarity with the ideal kernel, sinc. thus created, optimized kernel, will further reduce interpolation error. in this paper, the process of optimization of parameters of the 3p keys kernel [15] in the spectral domain, is presented. optimization of kernel parameters was performed by minimizing the ripple of the spectral characteristic. the first part of the paper describes the algorithm for optimizing kernel parameters. first, by applying the fourier transform on the 3p kernel, r, the analytical form of the spectral characteristic, h, was determined. after that, the spectral characteristics were approximated using the taylor series, ht. the ripple reduction was achieved by eliminating the members of the taylor series, ht, which have a dominant effect on the ripple increase. then, the degree of similarity of the spectral characteristics of the ideal sinc kernel, hsinc, and the optimized kernel, hopt, was determined by comparative analysis. mse were used as a measure of similarity [11]. finally, the optimal parameters, (αopt, βopt, opt), were determined based on the minimum of the mse. the second part of the paper presents the results of an experiment in which the optimal parameters for 1p keys, 2p keys and 3p keys kernels were determined. an algorithm for interpolation test images, error interpolation estimation, and determination of experimental optimal parameters, is described. for the purposes of the experiment, the image test base was formed. image test base consists of: a) standard test images for digital signal processing (lena, barbara, cameraman, peppers, boats, tulips, and watch), and b) images from the bsds500 image base [17]. test images from the bsds500 base have numeric labels, so they will be named in the same way later in this paper. by applying the algorithm for each image, the optimal parameters and the corresponding estimate errors were determined. the results are presented in tables and graphs. finally, a comparative analysis of the experimental results with the results obtained by optimizing the spectral characteristic, was performed. comparative analysis will determine: a) the accuracy of interpolation using mse and b) the accuracy of estimating kernel parameters using absolute error. finally, in the last part of the paper, an analysis of the execution time of all analyzed kernels was performed. testing of the execution time was performed on a computer desktop s2ac43p, processor: intel (r) pentium (r), cpu: g3220 3 ghz, ram: 8 gb and a windows 10 operating system. the matlab r2017b program was applied (to determine the execution time, the tic and toc functions are used). it should be emphasized that the realized experiment, within which the algorithm for pcc interpolation is described, is intended, exclusively, for the comparative analysis of the interpolation accuracy of the 1p keys, 2p keys and 3p keys kernels. it was implemented using the matlab. therefore, the time of interpolation execution, in this case, is not of primary importance, because the condition for real-time is not set. the paper is organized as follows: section 2 describes 3p keys kernel. section 3 describes the 3p keys kernel parameterization algorithm. experimental results and comparative analysis are presented in section 4. section 5 is the conclusion. 286 n. savić, z. milivojević, z. veličković 2. keys parametric interpolation kernels in paper [1], for the field of convolutional interpolation fundamental paper, the author defined a parametric interpolation kernel. the kernel was intended to image interpolation. later, in the scientific literature, the interpolation kernel from [1] was called the 1p keys kernel. 2.1. 1p keys kernel the proposed 1p keys kernel [1] is defined as: 3 2 3 2 ( 2) | | ( 3) | | 1, | | 1, ( ) | | 5 | | 8 | | 4 , 1 | | 2 0, | | 2 x x x r x x x x x x        + − + +   = − + −     , (1) where α is parameter of the 1p keys kernel. the length of this kernel is l = 4. 2.2. 2p keys kernel a modification of the 1p key kernel, with the introduction of the second kernel parameter, with length l = 6, is shown in [13]. the analytical form of the 2p keys kernel is: ( ) 3 2 3 2 3 2 ( 2) | | ( 3) | | 1, | | 1 | | (5 ) | | (8 3 ) | | (4 2 ), 1 | | 2 | | 8 | | 21 | | 18 , 2 | | 3 0, | | 3 x x x x x x x r x x x x x x                 − + − − + +   − − + − − −   =  − + −     , (2) where α and β are the parameters of the kernel. for β = 0 is obtained 1p keys kernel. in [12 14], it was shown that the precision of the pcc interpolation with the 2p keys kernel was increased compared to the interpolation of the pcc interpolation with the 1p keys kernel. 2.3. 3p keys kernel the results in [12 14] show that the precision of the pcc interpolation with 2p keys kernel, compared to interpolation with 1p keys kernel, is increased. with the idea of further increasing the interpolation accuracy, the parameterization of the 1p kernel, using three parameters, was performed [15]. the three-parameter kernel is called the 3p keys kernel. the analytical form of the keys 3p kernel is: 3 2 3 2 3 2 3 2 ( 2) | | ( 3) | | 1, | | 1 | | ( 5 ) | | (8 3 3 ) | | ( 4 2 2 ), 1 | | 2 ( ) | | ( 8 ) | | (21 5 ) | | ( 18 6 ), 2 | | 3 | | 11 | | 40 | | 48 , 3 | | 4 0, | | 4 x x x x x x x r x x x x x x x x x x                             − + + + − + − − +   + − − − + − + + − + −    = + − + + − + − +    − + −      ,(3) where α, β and  are the parameters of the 3p keys kernel. as an example, fig. 1.a shows the time characteristics of the ideal interpolation kernel, rsinc, and the 3p keys kernel, rαβ, for kernel parameters α = -1.2, β = -0.1 and  = -0.1. optimization of the 3p keys kernel parameters ... 287 a) b) fig. 1 characteristics of the ideal sinc and 3p keys kernels (α = -1.2, β = -0.1,  = -0.1): a) time characteristics (rsinc, rαβγ) and b) spectral characteristics (hsinc, hαβ) 3. optimization of the keys 3p kernel parameters the spectral characteristic, h, of the 3p keys kernel (eq. 3) is different from the spectral characteristic, hsinc of the ideal interpolation kernel rsinc (fig. 1.b). the deviation of the spectral characteristic h from hsinc is described as the ripple of the spectral characteristic. the optimization process minimizes the difference between the spectral characteristics of h and hsinc. optimization involves selecting the kernel parameters α, β, and , so as to minimize the mean square error between h and hsinc. in this way, the optimal parameters of the 3p keys kernel αopt, βopt and opt are obtained. 3.1. algorithm for minimizing of the ripple of the spectral characteristic this part of the paper conducts the optimization of keys 3p kernel parameters by minimizing the ripple of the spectral characteristic. the algorithm for parameters optimization consists of the following steps: input: r 3p keys kernel output: αopt, βopt and opt kernel parameters. step 1: decomposition 3p keys kernel r to its components r0, r1, r2 and r3. step 2: determining the spectral characteristic h(f) by applying the fourier transform over the kernel components r0, r1, r2 and r3. step 3: the expansion of the spectral characteristic h( f ) into taylor series ht( f ). step 4: eliminating coefficients of the members of the spectral characteristic ht( f ) which dominantly affect on the ripple of the spectral characteristic. determining the optimal kernel parameters αopt, βopt and opt. a more detailed explanation of the algorithm steps (step 1 step 4) is shown below. 3.2. kernel components (step 1) the 3p keys kernel r (eq. (3)) can be represented as the sum of the kernel components: 288 n. savić, z. milivojević, z. veličković 0 1 2 3( ) ( ) ( ) ( ) ( )r x r x r x r x r x  = + + + , (4) where 3 2 0 2 | | 3 | | 1. | | 1 ( ) 0, | | 1 x x x r x x  − +  =   , (5) 3 2 3 2 1 | | | | , | | 1 ( ) | | 5 | | 8 | | 4, 1 | | 2 0, | | 2 x x x r x x x x x x  −   = − + −     , (6) 3 2 2 2 3 2 | | | | , | | 1 | | 3 | | 2, 1 | | 2 ( ) | | 8 | | 21| | 18, 2 | | 3 0, | | 3 x x x x x x r x x x x x x  − +   − +   =  − + −     , (7) and 3 2 2 2 3 3 2 | | | | , | | 1 | | 3 | | 2, 1 | | 2 ( ) | | 5 | | 6, 2 | | 3 | | 11| | 40 | | 48, 3 | | 4 0, | | 4 x x x x x x r x x x x x x x x x  −   − + −    = − +    − + −      , (8) are components of the 3p keys kernel. fig. 2 shows the components of 3p keys kernel r0, r1, r2 and r3. fig. 2 3p keys kernel components: r0, r1, r2 and r3 3.3. spectral characteristic of the 3p keys kernel (step 2) in order to optimize the parameters α, β, and , of the 3p keys kernel r in the spectral domain, by using the fourier transform (ft) the spectral characteristic of the kernel h was obtained: 0 1 2 3 0 1 2 3 ( ) ( ( )) ( ( ) ( ) ( ) ( )) ( ) ( ) ( ) ( ) h f ft r x ft r x r x r x r x h f h f h f h f       = = + + + = + + + (9) where h0, h1, h2 and h3 are spectral components of the 3p keys kernel: optimization of the 3p keys kernel parameters ... 289 2 0 ( ) ( ) xfi oh f r x e dx  − − =  , (10) 2 1 1( ) ( ) xfih f r x e dx  − − =  , (11) 2 2 2( ) ( ) xfih f r x e dx  − − =  , (12) and 2 3 3( ) ( ) xfih f r x e dx  − − =  . (13) by substituting eq. (5) in eq. (10) is obtained: 0 1 3 2 2 3 2 2 0 1 0 ( ) ( 2 3 1) (2 3 1) xfi xfih f x x e dx x x e dx − − − = − − + + − +  , (14) by substituting eq. (6) in eq. (11) is obtained: -1 0 3 2 -2 3 2 -2 1 -2 -1 1 2 3 2 -2 3 2 -2 0 1 ( ) ( 5 8 4) ( ) ( ) ( 5 8 4) xfi xfi xfi xfi h f x x x e dx x x e dx x x e dx x x x e dx     = − − − − + − − + − + − + −     , (15) by substituting eq. (7) in eq. (12) is obtained: 2 1 3 2 2 2 2 2 3 2 0 1 2 3 2 2 3 2 2 2 2 1 0 1 3 3 2 2 2 ( ) ( 8 21 18) ( 3 2) ( ) ( ) ( 3 2) ( 8 21 18) xfi xfi xfi xfi xfi xfi h f x x x e dx x x e dx x x e dx x x e dx x x e dx x x x e dx       − − − − − − − − − − − = − − − − + + + + + + − + + − + + − + −       , (16) by substituting eq. (8) in eq. (13) is obtained: 3 2 3 2 2 2 2 3 4 3 1 0 1 2 2 3 2 2 3 2 2 2 1 0 2 3 2 2 2 2 1 2 4 3 2 3 ( ) ( 11 40 48) ( 5 6) ( 3 2) ( ) ( ) ( 3 2) ( 5 6) ( 11 40 48) xfi xfi xfi xfi xfi xfi xfi h f x x x e dx x x e dx x x e dx x x e dx x x e dx x x e dx x x e dx x x x        − − − − − − − − − − − − − − = − − − − + + + + − − − + − − + − + − + − + − + + − + −        2 xfie dx−  , (17) after applying euler's formula and partial integration, the spectral components of the kernel can be written in the following form: 290 n. savić, z. milivojević, z. veličković 2 0 4 4 6sin ( ) 3 sin(2 ) ( ) 2 f f f h f f     − = , (18) 2 1 4 4 3sin (2 ) 4 sin(2 ) sin(4 ) ( ) 2 f f f f f h f f       − − = , (19) 2 2 2 2 4 4 4 4 3sin ( ) 3sin (2 ) 3sin (3 ) ( ) 2 3 sin(2 ) 3 sin(4 ) sin(6 ) 2 f f f h f f f f f f f f f            − − + = + − − , (20) and 2 2 2 3 4 4 4 4 3(sin ( ) sin (3 ) sin (4 )) ( ) 2 (3sin(2 ) 2sin(4 ) 3sin(6 ) sin(8 )) 2 f f f h f f f f f f f f           − + = − − + − − . (21) spectral components h0 (eq. (18)), h1 (eq. (19)), h2 (eq. (20)) and h3 (eq.(21)), are shown in fig. 3. fig. 3 spectral components h0, h1, h2 and h3. of the 3p keys kernel 3.4. optimal kernel parameters (step 3, step 4) in order to determine the optimal parameters of the 3p keys kernel r in the spectral domain, the taylor expansion ht of spectral characteristic h (eq. (9)) was determined. (step 3) by expansion into taylor series in the neighborhood f = 0 (maclaurin series), spectral components of the kernel were obtained: optimization of the 3p keys kernel parameters ... 291 2 4 6 8 0 4 1 8 2 ( ) 1 ( ) ( ) ( ) ( ) ... 15 35 4725 31185 th f f f f f   = − + − + + , (22) 2 4 6 8 1 8 16 232 4112 ( ) ( ) ( ) ( ) ( ) ... 15 35 1575 155925 th f f f f f   = − + − + + , (23) 2 4 6 8 2 8 272 4232 205808 ( ) ( ) ( ) ( ) ( ) ... 15 105 1575 155925 th f f f f f   = − + − + + , (24) and 2 4 6 8 3 16 256 25904 2640832 ( ) ( ) ( ) ( ) ( ) ... 15 35 1575 155925 th f f f f f   = − + − + + . (25) by substituting eq. (22)-(25) in eq. (9) is obtained: 0 1 2 3 2 4 6 8 ( ) ( ) ( ) ( ) ( ) 4 1 1 (1 2 2 4 )( ) (3 48 272 768 )( ) 15 105 8 (1 87 1587 9714 )( ) ( ) 4725 t t t t th f h f h f h f h f f f f o f                 = + + + = − + + + + + + + − + + + + . (26) (step 4) the minimization of the spectral characteristic (eq. (26)) ripple is carried out by eliminating the dominant members of the spectral characteristic: 1 2 2 4 0 3 48 272 768 0 1 87 1587 9714 0          + + + =  + + + =  + + + = . (27) after calculating the system of equations eq. (27) is obtained: 4945 0.6132 8064 409 0.1522 2688 157 0.0195 8064 opt opt opt    = −  − =  = −  − . (28) by substituting the optimal parameter αopt = -0.5 [11], the optimal interpolation 1p keys kernel, ropt_1p, was obtained: 3 2 3 2 _1 1.5 | | 2.5 | | 1, | | 1, ( ) 0.5 | | 2.5 | | 4 | | 2, 1 | | 2 0, | | 2 opt p x x x r x x x x x x  − +   = − − +     . (29) the spectral characteristic of the 1p keys kernel, hopt_1p, is shown in fig. 4. by substituting the optimal parameters αopt = -0.5938, βopt = 0.0938 [12] the optimal interpolation 2p keys kernel, ropt_2p, was obtained: 292 n. savić, z. milivojević, z. veličković 3 2 3 2 _ 2 3 2 1.3124 | | 2.3124 | | 1, | | 1 0.5938 | | 3.0628 | | 5.0318 | | 2.5628, 1 | | 2 ( ) 0.0938 | | 0.7504 | | 1.9698 | | 1.6884, 2 | | 3 0, | | 3 opt p x x x x x x x r x x x x x x  − +   − + − +   =  − + −     . (30) the spectral characteristic of the 2p keys kernel, hopt_2p, is shown in fig. 4. by substituting the optimal parameters αopt = -0.6132, βopt = 0.1522, opt = -0.0195 (eq. (28)) in eq. (3), the optimal interpolation 3p keys kernel, ropt_3p, was obtained: 3 2 3 2 3 2 _ 3 3 2 1.2151| | 2.2151| | 1, | | 1 0.6132 | | 3.2377 | | 5.4207 | | 2.7962, 1 | | 2 ( ) 0.1522 | | 1.2371| | 3.2937 | | 2.8566, 2 | | 3 0.0195 | | 0.2145 | | 0.78 | | 0.936, 3 | | 4 0, | | 4 opt p x x x x x x x r x x x x x x x x x x  − +   − + − +    = − + −    − − − −      . (31) the spectral characteristic of the 3p keys kernel, is shown in fig. 4. moreover, fig. 4 shows the spectral characteristics of the ideal rsinc kernel (hsinc). paper [11] presents the total mean square error, mset, i.e. the difference between the spectral characteristic h and the ideal box characteristic hsinc: 1 2 sinc 0 1 ( ) ( ) k t k k k mse h f h f k − = = − . (32) fig. 4 spectral characteristic of the ideal interpolation kernel hsinc and optimal spectral characteristics h of: a) 1p (αopt = -0.5), b) 2p (αopt = -0.5938, βopt = 0.0938) and c) 3p (αopt = -0.6132, βopt = 0.1522, opt = -0.0195) keys kernel optimization of the 3p keys kernel parameters ... 293 4. experimental results and analysis 4.1. experiment an experiment, with the aim of determining: a) interpolation accuracy with the 3p keys kernel, and b) interpolation execution time with the 3p keys kernel, te, in relation to interpolations with the 1p and 2p keys kernels, was realized. interpolations were performed on test images, ti, from the image base. the image base is created from some: a) standard test images used in digital image processing, and b) test images from the bsds500 base. some test images from the image base are in color (rgb) and some are in black-white (y). in this experiment, interpolations were performed on black-white images. therefore, color images were transformed into black-white images in accordance with the colorimetric equation y = 0.3r + 0.59g + 0.11b. the experiment was performed as follows. first, the experimental optimal values of the kernel parameters for: a) 1p keys (αopt), b) 2p keys (αopt, βopt) and c) 3p keys (αopt, βopt, opt), using the algorithm described below, were determined. after that, a comparative analysis of the error estimation of the optimal parameters of the kernels obtained: a) by optimizing the ripple of the spectral characteristic and b) obtained by experiments. finally, a comparative analysis of interpolation accuracy between the proposed 3p keys versus 1p keys and 2p keys was performed. for these reasons, the test image , ti, which, for analysis purposes, is presented as a two-dimensional matrix, with dimensions (l x k), was transformed into a one-dimensional matrix. the transformation was performed by connecting the rows of the test image matrix one after the other, and, in this way, a onedimensional matrix, x, with dimensions n = l x k, was obtained (these activities are realized by the algorithm described in section 4.3). the interpolation is organized as follows. the interpolation of the intensity of the pixel i, x(i), was performed by convolution between the interpolation kernel and intensity of the pixels x(ik), x(i k + 1), ..., x(i + k), where k is the length of the interpolation kernel. the interpolated value of pixel i is ˆ ix . on the other hand, intensity of the pixel i is known (x(i)), and, in the experiment, it is considered to be the true value of the pixel intensity. further analysis involved defining interpolation error. the interpolation error was defined by mse (eq. (32)), which was calculated between true, x(i), and the interpolated intensity, ˆ ix , of the pixel i. mse was used in a comparative analysis of interpolation accuracy, between interpolation results with applied 1p, 2p and 3p keys kernels. the interpolation results (msemin) are presented using graphs and tables. by comparative analysis of msemin, the precision of interpolation with the 3p keys kernel, in relation to the precision of interpolation with the 1p and 2p keys kernels, was determined. in addition, the executions time of the pcc interpolation, te, was determined. testing of the of the execution time was performed on a computer desktop s2ac43p, processor: intel (r) pentium (r), cpu: g3220 3 ghz, ram: 8 gb and a windows 10 operating system. the matlab r2017b program was applied (to determine the execution time, te, the tic and toc functions are used). execution time was measured for: a) complete convolution with kernels (eq. (1), eq. (2) and eq. (3)), where, based on the kernel parameters α, β and , the coefficients of third order polynomials are calculated, and then the value of the polynomials were calculated, b) convolution with the optimized kernel parameters (eq. (29), eq. (30) and eq. (31)), where the coefficients of the polynomial were previously calculated, and, after that, the value of the polynomial is were calculated, and c) convolutional kernel execution time, without interpolation. all interpolation execution times, as the arithmetic mean of the value of the results for 100000 interpolations, were determined. 294 n. savić, z. milivojević, z. veličković 4.2. image base for the purpose of realizing the experiment, in which the accuracy of pcc interpolation with image interpolation, is tested, an image base was created. image base consists of: a) standard test images for digital signal processing, and b) images from the bsds500 image base [17]. standard test images are: lena (512 x 512, rgb) (fig. 5.a), barbara (225 x 675, rgb) (fig. 5.b), cameraman (225 x 675, y) (fig. 5). c), peppers (225 x 675, rgb) (fig. 5.d), boats (225 x 675, rgb) (fig. 5.e), tulips (512 x 768, rgb) (fig. 5.f) , and watch (768 x 1024, rgb) (fig. 5.d). test images from the bsds500 base have numeric labels: 3096 (321 x 481, rgb) (fig. 5.h), 14037 (321 x 481, rgb) (fig. 5.i), 295087 (321 x 481, rgb) ( fig. 5.j), 126007 (321 x 481, rgb) (fig. 5.k), 260058 (321 x 481, rgb) (fig. 5.l), 160068 (321 x 481, rgb) (fig. 5.m), 241004 (321 x 481, rgb) (fig. 5.n), 197017 (321 x 481, rgb) (fig. 5.o), 143090 (321 x 481, rgb) (fig. 5.p). a) b) c) d) e) f) g) h) i) j) k) l) m) n) o) p) fig. 5 test image for digital image processing: a) lena, b) barbara, c) cameraman, d) pappers, e) boats, f) tulips, d) watch. test images from bsds500 database, with numeric labels: h) 3096, i) 14037, j) 295087, k) 12607, l) 260058, m) 160068, n) 241004, o) 197017, p) 143090 optimization of the 3p keys kernel parameters ... 295 4.3. algorithm for interpolation error determining the following algorithm performs interpolation of the test images, determines the interpolation error and determines the mse depending on the parameters α, β and γ. optimal parameters were determined by minimizing mse. algorithm is realized in the following steps: input: (r0, r1, r2, r3) – 3p keys kernel parameters, (αmin, δα, αmax, βmin, δβ, βmax, γmin, δγ, γmax) parameter boundaries and iteration steps, l – kernel length, ti (l x k) test image. output: αopt, βopt, γopt. optimal parameters. mseα, mseαβ, mseαβγ. step 1: converting a color image to a black-white image. if test image == color image 0.3 0.59 0.11it r g b=  +  +  end step 2: transformation of the image ti (l x k) into a one-dimensional matrix x: for = 1 : l for k = 1 : k (( 1) ) ( , )ix k k t k−  + = end k end the dimensions of the one-dimensional matrix x are (1, n), where n = l x k. for γ = γmin : δγ :γmax. for β = βmin : δβ : βmax for α = αmin : δα : αmax step 3: construction of the kernel: 0 1 2 3r r r r r  = + + + , step 4: the length of interpolation frame is: 2 1m l=  − for i = 1: n-m+1, step 5: selecting the i-th frame: xi = x (1: i+m-1) step 6: estimation of ˆ ix by applying pcc: ˆ [1: 2 : ]i ix x m r=  , where the symbol  stands for convolution. step 7: estimation error is: ˆ( ) ( )i ie i x l x= − end i step 8: mean square error of estimation of 1p kernel: 1 2 1 ( ) 1 ( 1) | ( ) | n m k mse n m e k  − + = = − +  , end α step 9: mean square error of estimation of 2p kernel: ( )mse mse  = , end β step 10: mean square error of estimation of 3p kernel: ( )mse mse  = , end γ step 11:. optimal values of 3p kernel parameters: , , ( , , ) argmin( )opt opt opt mse       = . 296 n. savić, z. milivojević, z. veličković the described algorithm had the purpose of testing the interpolation error with the 3p keys kernel in relation to the interpolation error with the 1p and 2p keys kernels. the algorithm was implemented in matlab, and, except for testing, is not intended for realtime systems. therefore, the execution time of the algorithm is not of dominant importance. however, in the experiment, using the matlab function tic and toc, for the case of applying 1p, 2p and 3p keys kernels, the interpolation execution time, te, is determined. based on the execution time, a comparative analysis was performed. 4.4. experimental results using the test algorithm described in section 4.3, interpolation of the test images was performed. interpolation for some values of α, β and γ parameters from the specified range has been performed. in addition, interpolation with the 1p, 2p and 3p keys kernels with all parameters from the range was performed. for each interpolation, the interpolation error, mse, is determined. based on the minimum interpolation error, msemin, the optimal interpolation kernel parameter was determined. figure 5.a shows the dependence of the mseα on the parameter α, for the 1p keys kernel (test image boats). the optimal parameter, αopt, was determined as ( ) arg min( )opt mse   = . figure 5.b shows the dependence of mseαβ on the parameters α and β for the 2p keys kernel (test image boats). the optimal parameters αopt and βopt, were determined as , ( , ) argmin( )opt opt mse     = . the minimum interpolation errors, msemin, and the corresponding optimal kernel parameters, when interpolating all test images from the image base, are shown in: a) table 1 (1p keys, αopt, mse1p), b) table 2 (2p keys, αopt, βopt, mse2p) and c) table 3 (3p keys, αopt, βopt, γopt, mse3p). table 4 shows the execution time of pcc convolution for: a) complete convolution with kernels (label in the table: int1), (eq. (1), eq. (2) and eq. (3)), b) convolution with the optimized kernel parameters (label in the table: int2) (eq. (29), eq. (30) and eq. (31)) and c) convolutional kernel execution time, without interpolation (label in the table: kert). all interpolation execution times, as the arithmetic mean of the value of the results for 100000 interpolations, were determined. a) b) fig. 5 dependence of mse on kernel parameters for the test image boats: a) 1p keys kernel and b) 2p keys kernel optimization of the 3p keys kernel parameters ... 297 table 1 optimal parameter α and minimum mse for 1p keys kernel. image base image αopt mse1p d s p t es t b as e lena -0.3000 11.3234 barbara -0.1000 247.0271 cameraman -0.5000 0.3133 pappers -0.6200 75.7521 boats -0.3000 263.2390 tulips -0.7000 14.5797 watch -0.4000 49.9283 b s d s 5 0 0 b az e 3096 0.200 0.7933 14037 -0.6000 10.0185 295087 0.1000 2.3780 126007 -0.4000 19.1678 260058 -0.300 4.8327 160068 0.6000 0.5835 241004 -0.300 6.4673 197017 0.3000 6.4499 143090 -0.01 18.2042 _1opt p 1pmse -0.1706 45.6911 table 2 optimal parameters α and β, and minimum mse for 2p keys kernel image base image αopt βopt mse2p d s p t es t b as e lena -0.3000 -0.1000 11.3137 barbara -0.1000 0 247.0271 cameraman -0.3000 -0.2000 0.3114 pappers -0.5400 0.1000 75.2829 boats -0.4000 0.1000 262.7854 tulips -0.6000 0.2000 14.1536 watch 0 0.3000 49.2893 b s d s 5 0 0 b az e 3096 0.2100 0.0030 0.6346 14037 -0.300 0.200 7.9427 295087 0.0400 -0.0100 1.9018 126007. -0.4000 0.0100 15.3342 260058 -0.300 -0.010 3.8658 160068 0.7000 0.1000 0.4663 241004 -0.3000 -0.0300 5.1729 197017 0.4000 0.0900 5.1557 143090 -0.0100 0.0040 14.5632 _ 2opt p _ 2opt p 2pmse -0.1375 0.0473 44.7000 298 n. savić, z. milivojević, z. veličković table 3 optimal parameters α, β and γ , and minimum mse for 3p keys kernel imag e base image αopt βopt γopt mse3p d s p t es t b as e lena -0.3000 -0.1000 -0.0500 11.3130 barbara -0.1000 -0.3000 -0.3000 242.1622 cameraman 0.3000 -0.1000 0.1000 0.3113 pappers -0.5200 0.1000 -0.0200 75.2664 boats 0.5000 0.2000 0.0500 262.7747 tulips -0.6000 0.2000 -0.0500 14.1407 watch -0.1000 0.1000 -0.1500 49.2107 b s d s 5 0 0 b az e 3096 0.2000 -0.007 -0.005 0.4760 14037 -0.300 0.2000 -0.010 5.9566 295087 0 0 0.0400 1.4259 126007. -0.400 0.1000 0.0800 11.4961 260058 -0.400 -0.060 0.0001 2.8970 160068 0.7000 0 -0.110 0.3491 241004 -0.300 0 0.0400 3.8780 197017 0.400 0.0800 -0.014 3.8666 143090 -0.020 0.0900 0.1000 10.9091 _ 3opt p _ 3opt p _ 3opt p 3pmse -0.1587 0.0314 -0.0187 43.5271 table 4 execution time for pcc interpolation. execution time te (s) te_1p_keys te_2p_keys te_3p_keys int1 1.430510-6 2.487610-6 2.522510-6 int2 1.190310-6 2.070410-6 2.099010-6 kert 5.649910-7 5.649210-7 5.648910-7 4.5. comparative analysis according to the results presented in table 1, table 2 and table 3, it is obvious that: a) mse when applying 2p keys kernel compared to 1p keys kernel: 1pmse / 2pmse = 45.6911 / 44.700 = 1.0222 times smaller, b) mse when applying 3p keys kernel compared to 1p keys kernel: 1pmse / 3pmse = 45.6911 / 43.5271 = 1.0497 times smaller, and c) mse when applying 3p keys kernel compared to 2p keys kernel: 2pmse / 3pmse = 44.700 / 43.5970 = 1.0269 times smaller. the optimal values of the kernel parameters, determined by minimizing the ripple of the characteristic of the 3p keys kernel (eq. (28)), are: αopt = -0.6132, βopt = 0.1522 i γopt = 0.0195. using the experimental results (table 3), it was shown that the mean values of the optimal kernel parameters, determined for all test images, are: _ 3opt p = -0.1587, _ 3opt p = 0.0314 and _ 3opt p = -0.0187. the absolute error of the kernel parameters, determined by algorithm for minimizing of the ripple of the spectral characteristic, in relation to the experimentally determined kernel parameters, are: a) α3p = _ 3| |opt opt p − = | 0.6132 ( 0.1587) |− − − = 0.4545, b) β3p = _ 3| |opt opt p − = | 0.1522 0.0314 |− = 0.1208, optimization of the 3p keys kernel parameters ... 299 c) 3p = | |opt opt − = | 0.0195 ( 0.0187) |− − − = 0.0008. the total absolute error of kernel parameter estimation for all test images is et = 2 2 2 3 3 3p p p   + + = 0.4703. in accordance with the results presented in table 4, for a complete convolution with nonoptimized kernels, (eq. (1), eq. (2) and eq. (3)), (label in the table 1: int1), it is concluded that time execution, te, when applying: a) 2p keys kernel compared to 1p keys kernel is te_2p_keys / te_1p_keys = 2.487610-6 / 1.430510-6 = 1.7389 times bigger, b) 3p keys kernel compared to 1p keys kernel is te_3p_keys / te_1p_keys = 2.522510-6 / 1.430510-6 = 1.7633 times larger, and c) 3p keys kernel compared to 2p keys kernel is te_3p_keys / te_2p_keys = 2.5225106 / 2.487610-6 = 1.014 times larger in accordance with the results presented in table 4, for a complete convolution with optimized kernels, (eq. (29), eq. (30) and eq. (31)), (label in the table 1: int1), it is concluded that time execution, te, when applying: a) 2p keys kernel compared to 1p keys kernel is te_2p_keys / te_1p_keys = 2.070410-6 / 1.190310-6 = 1.7393 times bigger, b) 3p keys kernel compared to 1p keys kernel is te_3p_keys / te_1p_keys = 2.099010-6 / 1.190310-6 = 1.7634 times larger, and c) 3p keys kernel compared to 2p keys kernel is te_3p_keys / te_2p_keys = 2.099010-6 / 2.070410-6 = 1.013 times larger. the convolutional kernel execution time, te, without interpolation (label in the table: kert) is approximately 5.64910-7 for all keys kernels. the reason is that all kernels, after optimization, have the same numerical complexity: a third-order polynomial with constant coefficients. when a 3p keys interpolation kernel with optimized parameters is applied, the convolution execution time, compared to non-optimized kernels, is te 3p keys / te 3p keys opt = 2.522510-6 / 2.099010-6 = 1.2017 times less. the results from the described experiment and the conducted detailed comparative analysis of interpolation error, which were expressed through mse, indicated the fact that the accuracy of interpolation when the 3p keys kernel was applied, in relation to 1p and 2p kernels, increased. the testing algorithm is implemented in the matlab programming language. the interpolation execution times were calculated using the matlab function tic and toc. the experiment only showed precision interpolation with 3p keys kernels compared to precision with 1p keys and 2p keys kernels. in addition, the relative ratio of the interpolation execution times is determined. however, for real-time interpolation, the convolution algorithm must be written in a programming language (for example, programming language c) where, in the compilation process, optimizations can be made to reduce program execution time (eq. 31). in this way, image processing can be provided in real-time mode and, among other things, on personal computers. 5. conclusion the paper presents an algorithm for optimizing the parameters of the 3p keys interpolation kernel. parameter optimization was performed in the spectral domain by minimizing the ripple of the spectral characteristic. first, the spectral characteristic was developed in the taylor series, and, after that, the members of the taylor series that have a great effect on increasing the riple of the spectral characteristic, were eliminated. from the conditions of elimination of the dominant members of the taylor series, the optimal values of the parameters 3p keys kernel (αopt = -0.6132, βopt = 0.1522, γopt = -0.0195) were determined. verification of the accuracy of the 3p keys kernel when interpolating images 300 n. savić, z. milivojević, z. veličković was performed experimentally. the interpolation accuracy is expressed through the mse interpolation error. detailed comparative analysis showed that the 3p keys kernel, with experimentally determined optimal parameters, has a higher interpolation accuracy compared to the 1p keys kernel 1.0497 times, and compared to the 2p keys kernel 1.0269 times. based on the presented results, it is concluded that the 3p keys kernel is superior to the 1p keys and 2p kernels and that the interpolation error is very small. experimental results show that the 3p keys kernel, with the optimal parameters, which are determined by the optimization algorithm presented in this paper, performed the interpolation of the test images with great precision. the 3p keys kernel with optimal parameters, compared to the ideal sinc kernel, has a small numerical complexity, and therefore, it is suitable for implementation in convolutional interpolations for operation in real-time systems. references [1] r. g. keys, "cubic convolution interpolation for digital image processing" ieee trans. acout. speech, & signal processing, vol. assp-29, pp. 1153–1160, dec. 1981. [2] e. meijering, m. unser, "a note on cubic convolution interpolation", ieee transactions on image processing, vol. 12, no. 4, pp. 447–479, april 2003. [3] n. dodgson, "quadratic interpolation for image resampling", ieee transactions on image processing, vol. 6, no. 9, pp. 1322–1326, sept. 1997. [4] o. rukundo, b. maharaj, "optimization of image interpolation based on nearest neighbor algorithm", in proceedings of the international conference on computer vision theory and applications (visapp), 2014, vol. 1, pp. 641–647. [5] s. s. rifman, "digital rectification of erts multispectral imagery", in proceedings of the symp. significant results obtained from the earth resources technology satellite-1, 1973, vol 1, sec. b, pp. 1131–1142. [6] t. b. deng, "frequency-domain weighted-least-squares design of signal-dependent quadratic interpolators", iet signal process., vol. 4, no. 1, pp. 102–111, feb. 2010. [7] n. gajalakshmi, s. karunanithi, "cubic convolution and osculatory interpolation for image analysis", international journal of creative research thoughts (ijcrt), vol. 9, issue 12, pp. 836–841, december 2021. [8] y. li, f. qi, y. wan, "improvements on bicubic image interpolation", in proceedings of the ieee 4th advanced information technology, electronic and automation control conference (iaeac), 2019, pp. 1316– 1320. [9] s.-h. hong, l. wang, t.-k. truong, "an improved approach to the cubic-spline interpolation", in proceedings of the 25th ieee international conference on image processing (icip) 2018, pp. 1468– 1472. [10] k. s. park, r. a. schowengerdt, "image reconstruction by parametric cubic convolution", computer vision, graphics & image processing, vol. 23, pp. 258–272, 1982. [11] e. meijering, k. zuiderveld, m. viegever, "image reconstruction by convolution with symmetrical piecewise nth-order polynomial kernels", ieee transactions on image processing, vol. 8, no. 2, pp. 192–201, feb. 1999. [12] z. milivojević, n. savić, d. brodić, p. rajković, "optimization parameters of two parameter keys kernel in the spectral domain", in proceedings of the xv international scientific-professional symposium infoteh-jahorina, bosnia, 2016, pp. 392–397. [13] r. hanssen, r. bamler, "evaluation of interpolation kernels for sar interferometry", ieee transactions on geoscience and remote sensing, vol. 37, no. 1, pp. 318–321, jan. 1999. [14] z. milivojević, d. brodić, "estimation of the fundamental frequency of the real speech signal compressed by mp3 algorithm", archives of acoustics, vol. 38. no. 3, pp. 363–373, 2013. [15] z. milivojević, n. savić, d. brodić, "three-parametric cubic convolution kernel for estimating the fundamental frequency of the speech signal", computing and informatics, vol. 36, pp. 449–469, 2017. [16] n. savić, z. milivojević, "optimization of the 3p keys kernel parameters for interpolacion of audio signals", in proceedings of the international scientific conference unitech'20, gabrovo, bulgaria, 2020, pp. 200–205. [17] https://www2.eecs.berkeley.edu/research/projects/cs/vision/bsds/ 13768 facta universitatis series: electronics and energetics vol. 39, no 1, march 2026, pp. 257 268 https://doi.org/10.2298/fuee2601257s © 2026 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper high-voltage surge impact on thick-film sensors for structural health monitoring: resistance and noise spectroscopy analysis zdravko stanimirović1, ana stanimirović2, aleksandar savić3, ivanka stanimirović1 1“vinča” institute of nuclear sciences national institute of the republic of serbia, university of belgrade, serbia 2faculty of physics, university of belgrade, serbia 3faculty of civil engineering, university of belgrade, serbia orcid ids: zdravko stanimirović https://orcid.org/0000-0002-2048-0027 ana stanimirović https://orcid.org/0009-0002-6002-7347 aleksandar savić https://orcid.org/0000-0002-1777-6775 ivanka stanimirović https://orcid.org/0000-0003-2445-611x abstract. this study explores the effects of high-voltage electrical surges on the performance and structural integrity of thick-film strain sensors developed for structural health monitoring in steel infrastructure. the sensors were fabricated using screen-printing techniques with a bismuth lead ruthenate-based resistive composition deposited on alumina ceramic substrates. to simulate realistic operational conditions, the sensors were mounted on steel beams and subjected to four-point bending to induce mechanical strain. following mechanical loading, controlled high-voltage surge pulses were applied to emulate extreme electrical events. sensor response was characterized before and after surge exposure using both static resistance measurements and current noise spectral analysis. while resistance measurements showed limited change, noise spectroscopy revealed microstructural damage undetectable by conventional means. the findings highlight the degradation mechanisms arising from electromechanical stress and demonstrate the effectiveness of noise spectroscopy as a non-destructive diagnostic tool. these results support the use of thick-film sensors in electrically demanding environments. key words: thick-film strain sensors, structural health monitoring, high-voltage surge testing, lowfrequency noise, tunnelling conduction, metal-insulator-metal junctions received june 10, 2025; revised august 20, 2025; accepted september 16, 2025 corresponding author: ivanka stanimirović “vinča” institute of nuclear sciences – national institute of the republic of serbia, university of belgrade. e-mail: ivanka.stanimirovic@vin.bg.ac.rs 258 z. stanimirović, a. stanimirović, a. savić, i. stanimirović 1. introduction throughout their operational lifespan, civil engineering structures endure gradual deterioration and exposure to diverse environmental challenges, such as seismic disturbances, hydrodynamic forces, soil shifts and extreme climatic conditions. as infrastructure becomes increasingly complex and expansive, the deployment of sophisticated structural health monitoring (shm) systems is imperative to uphold structural integrity, enhance safety and refine maintenance strategies. shm functions on the principle that a structure's mechanical and material properties change over time due to external forces, wear, corrosion and other degradation processes. by persistently tracking strain variations, internal stress fluctuations and additional crucial metrics, early indicators of structural damage can be identified, helping to prevent catastrophic failures [1-3]. strain measurement is especially vital in shm, offering essential insights into load distribution, fatigue endurance and the prolonged functionality of civil infrastructure. various sensor technologies have been explored for strain measurement in shm, including metal foil strain gauges, fiber optic sensors and piezoelectric sensors, each possessing unique benefits and limitations [4-9]. in recent years, thick-film strain sensors have gained prominence as a resilient and cost-effective alternative for shm applications, delivering an optimal balance of mechanical strength, environmental resistance and seamless integration. unlike conventional strain gauges that rely on adhesive attachment, thick-film strain sensors feature screen-printed resistive films sintered onto various substrates, which ensures strong adhesion, durability and resistance to mechanical fatigue [10-12]. these sensors exhibit remarkable thermal stability, with minimal resistance fluctuations across diverse operational environments, making them highly suitable for outdoor structures subjected to varying temperatures. furthermore, thick-film strain sensors must demonstrate resilience against high-voltage surges, a crucial attribute for steel components in modern glass-steel constructions, bridges and critical infrastructure that face risks from lightning strikes and electrical disturbances. the differences in electrical and thermal performance between thick-film and other shm sensor technologies are highlighted in table 1. this research examines the behavior of screen-printed bi₂ru₂o₇-based ceramic strain sensors affixed to steel bars under high-voltage surge conditions. to analyze the influence of high-voltage surges, this study measures resistance variations in the sensors and investigates how structural changes correlate with noise performances. by assessing these interactions, the research provides a deeper understanding of how high-voltage exposure impacts sensor functionality. the findings highlight the promise of thick-film technology as a reliable and scalable solution for shm, demonstrating superior durability and adaptability compared to conventional strain sensing techniques. implementing thick-film sensors within civil infrastructure can bolster predictive maintenance efforts, lower upkeep costs and extend the operational lifespan of essential structures. this research contributes to the evolution of shm methodologies, offering key insights into the feasibility of thickfilm strain sensors in high-voltage environments. table 1 characteristics of thick-film sensors, metal foil strain gauges, fiber optic sensors and piezoelectric sensors for shm [13] sensor type thick-film sensors metal foil strain gauges fiber optic sensors piezoelectric sensors gf 2–35 ~2 0.8–1.2 varies tcr (ppm/°c) ±50 to ±200 ±5 to ±20 ~0 varies high-voltage surge impact on thick-film sensors for structural health monitoring... 259 2. experimental evaluation of high-voltage surge effects on thick-film strain sensors to assess the effects of high-voltage surges on thick-film strain sensors for structural health monitoring, thick-film strain sensors were affixed to steel bars (fig. 1a). the sensors were fabricated on 0.635 mm thick alumina (96% al₂o₃) substrates, combined with a bi2ru2o7-based thick-film resistive composition exhibiting a sheet resistance of 10 kω/sq. the resistive film was applied using standard screen-printing techniques with a semiautomatic screen printer. a stainless-steel screen, stretched over an aluminum frame, was employed to transfer the thick-film composition onto the substrate. the printed layer pattern was defined by a 200-mesh stainless-steel screen with emulsion thicknesses of 1012 μm, ensuring high-resolution deposition of the resistive film. a pd/ag conductive thick film was employed for the fabrication of contact pads to ensure reliable electrical connections in shm applications. each sensor, measuring 3 × 21 mm², was segmented into seven 3 × 3 mm² sections, separated by six contact pads (fig. 1a). following deposition, the printed resistive layers underwent a series of precisely controlled curing and firing steps to ensure stable electrical characteristics. the curing process involved initial leveling at room temperature, followed by drying at 150 °c for 10 minutes in an infrared conveyor dryer. subsequently, the resistive layers, with a thickness of 25 ± 3 µm, were subjected to a firing cycle lasting 60 minutes, including a 10-minute dwell time at a peak temperature of 850 °c. the conductive layers underwent a separate firing process lasting 30 minutes at the same peak temperature to ensure optimal adhesion and conductivity. thick-film strain sensors were attached to steel bars, commonly used as reinforcement in concrete structures and as load-bearing elements in bridges, high-rise buildings and tunnels, where precise strain monitoring is critical for structural integrity [14-15]. the mechanical properties of bi2ru2o7-based thick-film strain sensors are well-matched with the modulus of elasticity of steel (210 gpa [16]), enabling accurate strain measurements while minimizing material incompatibilities. moreover, screen-printed thick-film sensors on alumina substrates exhibit high mechanical strength, with an elasticity modulus of 300– 400 gpa [17], making them more compatible with steel than with concrete (elasticity modulus of 10–30 gpa [18]). this compatibility renders them particularly suitable for direct application on exposed steel components in modern glass-steel constructions, bridges and critical infrastructure. all sensor samples were fabricated at the institute for electronics and telecommunications iritel a.d. beograd, serbia. resistance measurements were conducted using the national instruments vb-8034 virtual bench instrument to ensure precise and reliable data acquisition under various strain conditions. the response of the ceramic strain sensors to high-voltage surges was systematically evaluated using a haefely p6t pulse generator, capable of delivering 10/700 μs pulses to simulate rapid electrical transients commonly encountered in structural environments (fig. 1b). a four-point bending test, designed to apply maximum flexural stress between two loading points, was performed at the faculty of civil engineering, university of belgrade. the steel bars used had dimensions of 200 × 20 × 40 mm, with a support span of 180 mm and a distance between loading points of 100 mm. this configuration ensures uniform strain distribution along the specimen length, providing realistic simulation of strain conditions in steel structural elements used in shm (fig. 1a). the rate of loading was not controlled, as the experimental setup required fine 260 z. stanimirović, a. stanimirović, a. savić, i. stanimirović manual adjustment to achieve the target substrate deflection. to prevent sensor detachment, substrate deflection was set to 300 μm, selected based on the breaking point of the alumina substrate determined during preliminary three-point bending tests and the properties of the adhesive used to attach the sensor to the steel bar. (a) (b) fig. 1 (a) thick-film strain sensor attached to a steel bar undergoing a four-point bending test and (b) 10/700 μs pulse delivered by haefely p6t pulse generator the electrical straining conditions were carefully controlled to facilitate gradual resistance variations during pulse application. the sensors were subjected to pulse increments of 250 v, ranging from 3 kv to 5.25 kv, with the generator's output resistance fixed at 25 ω. the testing procedure began with ten pulses applied at a frequency of six pulses per minute, with the voltage gradually increased from 3 kv to 5 kv. subsequently, four single pulses with a peak amplitude of 5.25 kv were introduced. throughout the testing process, gauge factor (gf) values were continuously monitored to evaluate the sensor response. the high-voltage surge testing adhered strictly to itu-t k.20, the industry standard for thick-film surge resistor evaluation, ensuring the validity and applicability of the findings for assessing the performance of thick-film strain sensors in shm applications. current noise spectra before and after high-voltage surge testing were measured using a keithley model 103a nanovolt amplifier in conjunction with an hp3561b dynamic signal analyzer over a frequency range of 10 hz to 10 khz. all measurements were conducted under controlled conditions at room temperature (t=295 k) to ensure consistency and accuracy in the acquired data. experimental arrangement employed in the characterization of the thick-film strain sensor is presented in figure 2. 3. analysis of the effects of high-voltage surges on thick-film strain sensors during the experimental procedure, the sensors were exposed to a controlled sequence of high-voltage pulses to evaluate their electrical stability and resistance behavior under increasing electrical stress. the applied voltage was incrementally raised in 250 v steps, ranging from an initial 3 kv to a maximum of 5.25 kv. the testing procedure started with ten pulses delivered at a frequency of six pulses per minute, with the voltage steadily rising high-voltage surge impact on thick-film sensors for structural health monitoring... 261 from 3 kv to 5 kv. as the applied voltage increased, a gradual decrease in resistance was recorded, suggesting an alteration in the sensor’s conductive pathways due to electrical stress. once resistance variations approached a threshold of approximately 3 %, the pulse frequency was reduced to a single pulse per voltage increment to allow for precise tracking of further resistance fluctuations. interestingly, at that point resistance values exhibited stabilization, indicating the sensor’s capacity to reach an electrically stable state despite prolonged exposure to high-voltage transients. additionally, the gauge factor measurements remained consistent throughout the experiment, confirming that the sensor maintained its strain sensitivity and overall functional integrity despite the imposed electrical stress conditions. the effects of high-voltage surges on the resistance and gauge factor of thick-film strain sensors at a substrate deflection of 300 μm are presented in fig. 3. data are presented for two sensors with initial resistances of r1=33.84 kω and r2=31.94 kω, highlighting resistance variations and gauge factor stability under electrical stress. fig. 2 experimental arrangement employed in the characterization of the thick-film strain sensor fig. 3 effect of high-voltage surges on the resistance and gauge factor of two thick-film strain sensors at a substrate deflection of 300 μm -20 0 20 40 60 80 100 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0 3 3 .2 5 3 .5 3 .7 5 4 4 .2 5 4 .5 4 .7 5 5 5 .2 5 5 .2 5 5 .2 5 5 .2 5 δ g f/ g fi [ % ] δ r /r i [ % ] v [kv] δr/r1 δr/r2 δgf/gf1 δgf/gf2 262 z. stanimirović, a. stanimirović, a. savić, i. stanimirović the electrical conduction in thick-film resistive materials is governed by a combination of contact conduction and tunneling conduction mechanisms [19]. the resistive film comprises numerous parallel conducting chains, where adjacent conductive particles are either in direct contact or separated by thin layers of borosilicate glass. under these conditions, the overall resistance of the film can be expressed as: 𝑅 = 𝐾𝑐 𝑀2 𝑅𝑐 + 𝐾𝑏 𝑀2 𝑅𝑏 (1) where 𝑅𝑐 represents the contact resistance between neighboring conductive particles, rb denotes the barrier resistance associated with tunneling through the insulating borosilicate glass layer, m is the total number of parallel conducting chains within the thick-film resistive network, kc is the number of direct contacts between adjacent particles and kb corresponds to the number of metal-insulator-metal (mim) junctions formed by conductive particles separated by the insulating glass phase. in this context, the total number of electrical junctions between adjacent conducting particles, k, can be expressed as: 𝐾 = 𝐾𝑐 + 𝐾𝑏 (2) to systematically investigate the effects of applied strain on conduction pathways particularly the transitions between direct interparticle contact and the formation or breakdown of mim junctions the relative contributions of contact resistance and barrier resistance can be introduced as [20]: 𝑝 = 𝐾𝑐 𝐾 (3) 1 − 𝑝 = 𝐾𝑏 𝐾 (4) where p represents the fraction of conductive pathways governed by direct particle-toparticle contact, while 1-p corresponds to the proportion of conduction occurring via tunneling through mim junctions. these parameters provide a framework for analyzing strain-induced modifications in the thick resistive film. if we define thick resistive films conductance as: 𝐺 = 𝑀2 𝐾[𝑝𝑅𝑐+(1−𝑝)𝑅𝑏] (5) considering the volume fraction of the conductive phase within the resistive film composition and the inherent relationship rc< 20 kw) where money income could be reduced for more than 10 000 eur in lifetime exploitation period due to long-term degradation. 7. conclusions modelling of pv system degradation in terms of statistical prediction of annual energy production proved to be a very complex task, mainly because of many uncertainties related to long exploitation period and field conditions. several useful guidelines and study case results have been presented in this article. the most common long-term degradation types have been modelled by using approximate relations, adopted on the basis of experimental observations. it has been shown that power losses of individual pv modules due to delamination and discoloration remain approximately constant under wide range of irradiation and ambient temperature values, while power losses due to corrosion proved to be temperature-dependent. mismatch power losses, caused by different degradation rates of individual pv modules in pv string, have been identified as potentially significant part of total degradation losses. methodology for prediction of annual energy production from pv string, based on horizontal irradiation and ambient temperature field measurements, has been modified in order to include long-term degradation effects. degradation factor has been introduced as useful tool for validating power losses due to long-term degradation. analysis of pv string consisting of 12 pv modules, located in belgrade, study case, showed that money losses during lifetime exploitation period, caused by long-term degradation could overcome price of several new pv modules. acknowledgement: the author would like to thank to professors jovan mikulović and željko đurišić for their advices and support during research period. special acknowledgement belongs to my best friend slobodan elez, who contributed with useful results related to his master thesis. 74 m. forcan references [1] m. forcan, “prediction of energy production from string pv system under mismatch condition”, in proceedings of the 2nd virtual international conference on science, technology and management in energy energetics, 2016, pp. 3-9. [2] m. jošt and m. topič, “efficiency limits in photovoltaics – case of single junction solar cells”, facta universitatis, series: electronics and energetics, vol. 27, no 4, pp. 631 638, december 2014. [3] y. georgiev, g. angelov, t. takov, i. zhivkov and m. hristov, “the photovoltaic behavior of vacuum deposited diphenyl-diketo-pyrrolopyrrole polymer”, facta universitatis, series: electronics and energetics, vol. 27, no 4, pp. 639 648, december 2014. [4] o. perpinan, e. lorenzo and m.a. castro, “on the calculation of energy produced by pv grid-connected system”, progress in photovoltaics research and applications, vol. 15, issue: 3, pp. 265-274, 2007. [5] m. brabec, e. pelikán, p. krč, k. eben and p. musilek, “statistical modeling of energy production by photovoltaic farms”, in proceedings of the ieee elect. power energy conf. (epec), aug. 2010, pp. 1-6. [6] o. perpinan, “statistical analysis of performance and simulation of two axis tracking pv system”, solar energy, vol. 83, issue 11, pp. 2074-2085, nov. 2009. [7] s. jiang, k. wang, h. zhang, y. ding and q. yu “encapsulation of pv modules using ethylene vinyl acetate copolymer as the encapsulant”, macromol. react. eng., 9, pp. 522–529, 2015. [8] t. shioda, “delamination failures in long-term field-aged pv modules from point of view of encapsulant”, lecture presented at 2013 nrel pv module reliability workshop, denver. [9] d. c. jordan, j. h. wohlgemuth, and s. r. kurtz, “technology and climate trends in pv module degradation”, in proceedings of the 27th european photovoltaic solar energy conference and exhibition, 2012, pp. 3118-3124. [10] m. kempe, “modelling of rates of moisture ingress into photovoltaic modules”, solar energy materials & solar cells, vol. 90, issue: 16, pp. 2720–2738, 2006. [11] m. kempe, “ultraviolet test and evaluation methods for encapsulants of photovoltaic modules”, solar energy materials & solar cells, vol. 94, issue: 2, pp. 246–253, 2010. [12] a. ndiaye, a. charki, a. kobi, c.m.f. kébé, p.a. ndiaye and v. sambou, “degradations of silicon photovoltaic modules: a literature review”, solar energy, vol. 96, pp. 140–151, 2013. [13] d. sera, r. teodorescu and p. rodriguez, “pv panel model based on datasheet values”, in proceedings of the ieee international symposium on industrial electronics, vigo, spain, 2007, pp. 2392–2396. [14] m. forcan, ţ. đurišić, and j. mikulović, “an algorithm for elimination of partial shading effect based on a theory of reference pv string,” solar energy, vol. 132, pp. 51–63, 2016. [15] m. forcan, j. tuševljak, s. lubura and m. šoja, “analyzing and modeling the power optimizer for boosting efficiency of pv panel,” ix symposium industrial electronics indel, banja luka, november 2012, pp. 193-198. [16] m. forcan and ţ. đurišić, “the analysis of pv string efficiency under mismatch conditions,” in 4th international symposium on environment friendly energies and applications efea, 2016, pp. 1-6. [17] c. schwingshackl, m. petitta, j.e. wagner, g. belluardo, d. moser, m. castelli, m. zebisch and a. tetzlaff, “wind effect on pv module temperature: analysis of different techniques for an accurate estimation”, energy procedia, vol. 40, pp. 77–86, 2013. [18] s. bensalem and m. chegaar, “thermal behavior of parasitic resistances of polycrystalline silicon solar cells”, revue des energies renouvelables, vol. 15, pp. 171-176, 2013. [19] m.l. priyanka and s.n. singh, “a new method of determination of series and shunt resistances of silicon solar cells”, solar energy materials & solar cells, vol. 91, pp. 137–142, jan. 2007. [20] d. macdonald and a. cuevas, “reduced fill factors in multicrystalline silicon solar cells due to injectionlevel dependent bulk recombination lifetimes”, progress in photovoltaics: research and applications, vol. 8, pp. 363–375, 2000. [21] matlab/simulink. mathworks, inc. natick. massachusetts. united states. [22] pv module data sheet, available online at http://www.suntellite.cn/en/product/suntellite-modulepolycrystalline-20.html [23] r. dubey, s. chattopadhyay, v. kuthanazhi, j. j. john, b. m. arora, a. kottantharayil, k. l. narasimhan, c. s. solanki, v. kuber, j. vasi, a. kumar and o. s. sastry “all india survey of photovoltaic module degradation 2013”, national centre for photovoltaic research and education, mumbai, india, 2014, available online at http://www.ncpre.iitb.ac.in/pages/publications_reports.html [24] g. m. masters, renewable and efficient electric power systems. hoboken, nj: john wiley & sons, 2004, chapters 7-8. http://www.suntellite.cn/en/product/suntellite-module-polycrystalline-20.html http://www.suntellite.cn/en/product/suntellite-module-polycrystalline-20.html http://www.ncpre.iitb.ac.in/pages/publications_reports.html 12001 facta universitatis series: electronics and energetics vol. 37, no 2, june 2024, pp. 277287 https://doi.org/10.2298/fuee2402277s © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper comparison of the performance of artificial neural network with variable step-size adaptive algorithms for the beamforming of smart antenna for cellular networks barsa samantaray1, kunal kumar das2, jibendu sekhar roy3 1,2ece department, iter, soa university, bhubaneswar, odisha, india 3school of electronics engineering, kiit university, bhubaneswar, odisha, india orcid ids: barsa samantaray https://orcid.org/0000-0001-7184-2123 kunal kumar das https://orcid.org/0000-0003-2832-2768 jibendu sekhar roy https://orcid.org/0000-0003-2911-2383 abstract. a smart antenna is an antenna array that uses spatial diversity to identify the desired mobile station (ms) and reject the unwanted interference signal in a cellular network. generally, adaptive signal processing algorithms are used for smart antenna beamforming, and one of the most common algorithms is the least mean square (lms) algorithm. here, the artificial neural network (ann) is used for beamforming of smart antennas, and the performance of the ann is compared with the performance of variable step-size lms (vs-lms) and variable step-size sign lms (vs-slms) algorithms. the ann has better performance than the vs-lms and vs-slms algorithms for the determination of user and null directions. lower side lobe levels (slls) are achieved using ann compared to the vs-lms and vs-slms algorithms. the reduction of sll from about 3.5 db to 8.5 db is achieved using ann compared to signal processing algorithms. key words: smart antenna, artificial neural network, signal processing, variable step-size, beamforming, sll 1. introduction smart antenna technology improves overall service quality in cellular communication which provide radiation beams to users while producing nulls for interferers [1]. the function of a smart antenna system in a 3-sector cellular network is shown in fig. 1. the system uses a signal processing algorithm [1-4] to achieve this adaptive system. the smart antenna is the key technology for 4th generation (4g) wireless access and beyond [5, 6]. received july 17, 2023; revised august 25, 2023; accepted september 11, 2023 corresponding author: jibendu sekhar roy school of electronics engineering, kiit university, bhubaneswar, odisha, india. e-mail: drjsroy@kiit.ac.in https://orcid.org/0000-0001-7184-2123 https://orcid.org/0000-0003-2832-2768 https://orcid.org/0000-0003-2911-2383 278 b. samantaray, k. k. das, j. s. roy fig. 1 smart antenna in an cellular network the adaptive sas first identifies the signal's doa before forming a retro-directive main beam [1]. multiple signal classification (music) and estimation of signal parameter via rotational invariance technique (esprit) are widely used doa estimation algorithms [7, 8]. in a cellular network, instead of sending power over the whole cellular zone, a smart antenna produces a beam towards the desired user only. the applications of machine learning (ml) algorithms in smart antenna design is reported in [1]. 2. related work there are several beamforming algorithms [9, 10] which include the lms [1, 11, 12], the recursive least square (rls) [13], and the sample matrix inverse (smi) algorithms [14]. the vs-lms algorithm provides [11] lower sll. in [14, 15], the vs-lms algorithm is used for the improved adaptive beamforming of doubly crossed uniform linear arrays. in order to achieve better convergence in adaptive beamforming, variable step-size lms and its variants are proposed in [16]. based on past data, in the ml method, a machine learns and improves on its own [17, 18, 19]. the use of ann for sas design is suggested in the review paper [20-22]. an overview of the application of ml methods for antenna and antenna array modelling is explained in [23]. a recurrent neural network is proposed to minimize sll [24]. in [25-27], neural network and deep learning based neural network for adaptive beamforming are reported. according to reported related work, signal processing algorithms appear to be used for the design of sas in the majority of cases [1]. the design of sas using machine learning avoids the use of signal processors. the use of machine learning algorithms for sas design is relatively new, and not many investigations have been reported on it to date. also, reports on the performance comparison between ann and signal processing algorithms for the design of smart antennas are not available in the literature. in this paper, the performance of the ann method for the design of smart antennas is compared with the signal processing algorithms. the ann, vs-lms, and vs-slms algorithms are implemented using matlab programming. the deviation of beam directions using ann is negligible from the desired beam directions compared to signal processing methods. the reduction of sll is necessary for minimizing interference in communication, and using ann, reduced slls are achieved compared to vs-slms and vs-lms algorithms. comparison of the performance of artificial neural network with variable step-size … 279 3. artificial neural network and signal processing algorithms artificial neural network (ann) is a widely used ml algorithm [27, 28], and ann is a sub-category of deep learning. in a multi-layer neural network, ann consists of an input layer, multiple hidden layers, and an output layer. the simple model of a multilayer perceptron network for ann is shown in fig. 2 using random weights and the weighted sum of inputs is passed through a non-linear activation function. the signal flows from left to right, which is ‘forward pass’. the output is compared with the training data to calculate the error. then in the ‘backward pass’, from right to left, it propagates the error to every node using back propagation. accordingly, to reduce the error, weights are adjusted unless the required output is obtained [1]. mainly, the signal processing algorithm is used to design a smart antenna [3, 29, 30]. in this paper, the performance of ann for the beamforming of smart antennas is compared with the performances of the vs-slms and vs-lms algorithms. fig. 2 artificial neural network architecture the lms algorithm incorporates an iterative procedure for successive corrections to the weight vector to obtain minimum mean square error [2, 11, 29]. the error e(n) between the desired signal d(n) and array output y(n) is [15] 𝑒(𝑛) = 𝑑(𝑛) − 𝑦(𝑛) (1) the weight vector update equation in the lms algorithm is 𝑤(𝑛 + 1) = 𝑤(𝑛) + 𝜇 𝑥(𝑛) 𝑒∗(𝑛) (2) here, μ is the step-size parameter, complex conjugate of e(n) is e*(n) and x(n)= [x1(n), x2(n) ------xn(n)] is the signal, received by the antennas [31]. the rate of convergence is determined by the step-size parameter μ, which is fixed in the lms algorithm. in variable step-size algorithms, μ varies, and convergence becomes better. in the vs-lms algorithm, μ varies during weight updating according to the formula [31]  𝑛+1 = 𝛼μ𝑛 + 𝛿휀𝑛, if 0<μn+1 < μmax = 𝜇𝑚𝑎𝑥, otherwise (3) 280 b. samantaray, k. k. das, j. s. roy where, maximum value of μ is μmax and ‘α’ and ‘δ’ are the constant parameters [11, 32, 33] and in simulation, δ =0.0003 and α =0.95. the weight update equation in vs-lms algorithm is [1] 𝑤(𝑛 + 1) = 𝑤(𝑛) + µ𝑛+1 𝑥(𝑛) 𝑒∗(𝑛) (4) in the sign lms (slms), the sign of the error is used for weight update. sign (also called signed regressor) lms is used for a faster adaptation process [34]. in vs-slms algorithm, the step size 𝜇 varies according to (3). the weight updating in the vs-slms algorithm is 𝑤(𝑛 + 1) = 𝑤(𝑛) + 𝜇𝑛+1𝑒∗(𝑛)𝑠𝑔𝑛[𝑥(𝑛)] (5) 𝑠𝑔𝑛[𝑥(𝑛)] = 1; 𝑓𝑜𝑟 𝑥(𝑛) > 0 = 0; 𝑓𝑜𝑟 𝑥(𝑛) = 0 = −1; 𝑓𝑜𝑟 𝑥(𝑛) < 0 (6) 4. smart antenna design using ann, vs-lms, and vs-slms algorithms in this work, smart antennas with a uniform linear array (ula) of isotropic antennas are considered (fig. 3). the uniform antenna separation is ‘d’. fig. 3 uniform linear antenna array the array factor (af) with a principal beam at an angle θ, is [3] 𝐴𝐹(𝜃) = ∑ 𝐼0𝑒𝑗(𝑛−1)(𝛽𝑑𝑠𝑖𝑛𝜃+𝛼) 𝑁 𝑛=1 = ∑ 𝐼0𝑒𝑗(𝑛−1)( 2𝜋𝑑 𝜆 𝑠𝑖𝑛𝜃+𝛼) 𝑁 𝑛=1 (7) where, ‘n’ is the total number of antenna elements, i0 is the amplitude of current fed to the antennas, and phase factor β=2π/λ at wavelength λ and the required progressive phase shift in the desired beam direction θ0 from the broadside direction is [11] α = -βdsinθ0. the cost function for beamforming using ann and signal processing methods is (7). the ratio of array factor (af) to maximum value of array factor (afmax) [11] is the normalized array factor, 𝐴𝐹𝑛𝑜𝑟𝑚 = | 𝐴𝐹 𝐴𝐹𝑚𝑎𝑥 | in this work, ulas of 10, 12, 16, and 20 elements (n=10, n=12, n=16, n=20) with spacing of d=λ/2 is considered at 1800 mhz [1]. the desired beam (user) direction (bd) is θs and the desired null (interferer) direction (nd) is θi. for the beamforming using ann, from the different combinations of f, d, θs and θi, data set of matrix dimension [2205x25] is created. the ann network consists of 3 input parameters, 2 input variables, 2 hidden comparison of the performance of artificial neural network with variable step-size … 281 layers, and 20 output variables (in the case of n=10) [1]. the first and second hidden layers have 20 neurons and 5 neurons, respectively. the two independent input variables are θs, the bd , and θi, the nd. the three input parameters are frequency (f), inter-element spacing (d), and phase constant (β). the 20 output variables are for an antenna array of 10 antenna elements. 10 variables are for the real parts of the weight, and 10 variables are for the imaginary parts of the weight. in ann simulation, the resilient back propagation algorithm [26] is used as a training algorithm. in ann, number of run is 1000, learning rate initialization is 0.01 and the tolerance value is 10-5. after training and testing, 10 complex weights are found, and these weights are used for beamforming using the cost function [1]. the vs-slms, and vs-lms algorithms are used for the beam generation of the ula [11]. four ulas with the number of antenna elements n=10, n=12, n=16 and n=20 are considered with different bd and nd. weight updating equations (4) and (5) with a cost function of (7) are used for beamforming. the number of iterations is 1000 in all cases. the flowchart for the implementation of variable step-size algorithms is shown in fig. 4. fig. 4 flowchart for the implementation of vs-lms and vs-slms algorithms adaptive beams of smart antennas of n=10, n=16, and n=20 with inter-element spacing of d=0.5λ obtained using ann, vs-lms, and vs-slms algorithms are plotted in figs. 5, 6, and 7 respectively. in fig. 5, bd=00, nd=120, in fig.6 bd=100, nd=220; and in fig. 7, bd=200, nd=320. to obtain the results of figs. 5-7, ann, vs-lms, and vs-slms are simulated for 1000 iterations/epochs. in fig. 5, for n=10, the maximum slls obtained for ann, vsslms, and vs-lms are -13.3 db, -9.98 db, and -4.7 db, respectively. in fig. 6, for n=16, the maximum slls obtained for ann, vs-slms, and vs-lms are -13.05 db, -8.72 db, and -9.4 db respectively. in fig. 7, for n=20, the maximum slls obtained for ann, vs282 b. samantaray, k. k. das, j. s. roy slms, and vs-lms are -13.4 db, -9.88 db, and -9.0 db, respectively. in all the cases deviations of bd and nd from desired values are minimum ann. therefore, the performance of ann for beamforming of smart antennas is better than that of vs-slms, and vs-lms algorithms. fig. 5 radiation beam using ann, vs-lms, and vs-slms for n=10 fig. 6 radiation beam using ann, vs-lms, and vs-slms for n=16 comparison of the performance of artificial neural network with variable step-size … 283 fig. 7 radiation beam using ann, vs-lms, and vs-slms for n=20 the results, obtained using ann, are compared with the signal processing algorithms in table 1. table 1 comparison of results between ann and signal processing algorithms no. of elements algorithm desired bd obtained bd desired nd obtained nd sllmax n=10 ann 0° 0.0° 12° 11.9° -13.3 db vs-slms 0° 0.7° 12° 12.3° -9.98 db vs-lms 0° 0.9° 12° 11.7° -4.70 db n=12 ann 15° 15.1° 30° 30.1° -13.02 db vs-slms 15° 14.5° 30° 29.5° -8.69 db vs-lms 15° 15.4° 30° 27.6° -9.15 db n=16 ann 10° 10.1° 22° 22.1° -13.05 db vs-slms 10° 10.4° 22° 22.3° -8.72 db vs-lms 10° 9.6° 22° 21.6° -9.40 db n=20 ann 20° 20.0° 32° 32.0° -13.40 db vs-slms 20° 19.0° 32° 31.8° -9.88 db vs-lms 20° 19.6° 32° 26.5° -9.00 db in table 1, the deviations of bd and nd from the desired values are less for ann than for vs-lms and vs-slms. lower slls are obtained for ann in all the cases. the variations in maximum slls with the number of antennas in the array are compared in fig. 8. using ann, an sll reduction of about 8.5 db is achieved for n=10 compared to vs-lms. for n=12, n=16, and n=20, a sll reduction of about 3.5 db is obtained in ann compared to signal processing algorithms. 284 b. samantaray, k. k. das, j. s. roy fig. 8 variation of maximum sll with number of antenna elements in the array the mean square error (mse) graphs for vs-lms, vs-slms, and ann are shown in fig. 9 for n=10, bd=0° and nd=12°. (a) (b) (c) fig. 9 mse curves for (a) vs-lms (b) vs-slms (c) ann the convergence of the ann algorithm is faster than that of the variable step-size adaptive algorithms. comparison of the performance of artificial neural network with variable step-size … 285 the results for the beamforming of the smart antennas, using ann are compared with the published results [16, 17, 25, 27, 35] in table 2. table 2 performance comparison of ann with other published results references beamforming method parameters maximum sll ref [16] vs-slms ula with n=4, d=λ/2, bd=200 -11.5 db ref [17] vs-nlms ula with n=10, d=λ/2, bd=00 -12.1 db ref [25] recurrent neural network (rnn) ula with n=32, d=λ/2, bd=00 -7.5 db ref [25] rnn ula with n=16, d=λ/2, bd=-100 -8.5 db ref [27] rnn based on the gated recurrent unit ula with n=16, d=λ/2, bd=1000 -11.5 db ref [35] elman rnn ula with n=5, d=λ/2, bd=300 -11.5 db this paper ann ula with n=10, d=λ/2, bd=00 -13.3 db this paper ann ula with n=16, d=λ/2, bd=100 -13.05 db this paper ann ula with n=20, d=λ/2, bd=200 -13.4 db one of the main sources of interference in a cellular network is the side lobes of the desired radiation beam. in table 2, lower slls are achieved using ann, presented in this paper. 5. conclusion the performance of the ann method for the design of smart antennas is compared with the signal processing algorithms. the ann shows better performance for achieving the desired bd and nd than other methods. for low interference low sll is desired in a cellular network, and using ann, lower slls are achieved compared to vs-lms and vsslms algorithms. the ml method of beamforming avoids the use of a signal processor in the sas. the theory and simulation are easier for the ann method than other ml algorithms. but the simulation time in the ann algorithm is longer than in the signal processing methods. the average time in ann simulation is 66 seconds, whereas for vslms or vs-vsslms, it is 25 seconds. references [1] b. samantaray, k. k. das, and j. s. roy, "designing smart antennas using machine learning algorithms", journal of telecommunication and information technology, vol. 2023, no. 4, pp. 46–52, oct 2023. [2] s. bellofiore, j. foutz, c. a. balanis, and a. s. spanias, "smart antenna system for mobile communication network. part 2. beamforming and network throughput", ieee antenna and propagation magazine, vol. 44, no. 4, pp. 106–114, 2002. [3] t. k. sarkar, m. c. wicks, and m. salazar-palma, smart antenna, wiley-ieee press, 2003. [4] c. a. balanis, antenna theory: analysis and design, ch-16, 3rd ed., wiley-interscience, hoboken, nj, 2005. [5] m. chryssomallis, "smart antennas", ieee antenna and propagation magazine, vol. 42, no. 3, pp. 129– 136, 2000. [6] w. liu, a. madanayake, l. wu, q. shen, and j. cai, "recent advances in design and signal processing for antenna arrays 2020", international journal of antennas and propagation, vol. 2023, article id: 9843456, 2023. 286 b. samantaray, k. k. das, j. s. roy [7] a. dhar, a. senapati, and j. s. roy, "direction of arrival estimation for smart antenna using a combined blind source separation and multiple signal classification algorithm", indian journal of science and technology (ijst), vol. 9, no. 18, 2016, pp. 1–8. [8] m. rzymowsky, k. nyka, and l. kulas, "direction of arrival estimation based on received signal strength using two-row electronically steerable parasitic array radiator antenna", sensors, vol. 22, no. 5, 2022, pp. 1–20. [9] m. abualhayja’a, and m. houssain, "comparative study of adaptive beamforming algorithms for smart antenna applications", in proceedings of the intl. conference on communications, signal processing, and their applications (iccspa), sharjah, uae, 16-18 march 2021, ieee xplore, 2021, pp. 1–5. [10] m. atzemourt, a. farchi, y. chihab, and z. hachkar, "performance evaluation of lms and cm algorithms for beamforming", advances in materials science and engineering, vol. 2022, article id 7744625, pp. 1–6, 2022. [11] b. samantaray, k. k. das, and j. s. roy, "performance of smart antenna in cellular network using variable step size algorithms, " international journal of microwave and optical technology (ijmot), vol. 15, no. 2, pp. 179–186, 2020. [12] k. pirapaharan, n. ajithkumar, k. sarujan, x. fernando, and p. r. p. hoole, "smart, fast, and low memory beam-steering antenna configurations for 5g and future wireless systems" electronics, vol.11, 2658, 2022, pp. 1–8. [13] b. c. banister, and j. r. zeidler, "tracking performance of the rls algorithm applied to an antenna array in a realistic fading environment", ieee trans. on signal processing, vol. 50, no. 10, pp. 1037– 1050, 2002. [14] j. gao, j. zhen, y. lv, and b. guo, "beamforming technique based on adaptive diagonal loading in wireless access networks", ad hoc networks, vol. 107, p. 102249, 2020. [15] m. mishra, and j. s. roy, "investigations on the effect of mutual coupling in smart antenna using adaptive signal processing algorithm", in proceedings of the 2018 ieee international conference on applied electromagnetics, signal processing and communication (aespc), oct. 22-24, 2018, ieee xplore, pp. 1–4. [16] r. m shubair, and a. hakam, "adaptive beamforming using variable step-size lms algorithm with novel ula array configuration", in proceedings of the 15th ieee international conference on communication technology, guilin, china, 17-19 nov., 2013, ieee xplore, 2013, pp. 1–4. [17] veerendraa and m. bakharb, "a novel lms beamformer for adaptive antenna array", in proceedings of the 7th intl. conf. on advances in computing & communications (icacc-2017), 22-24 august 2017, cochin, india, proceedia computer science, vol. 115, 2017, pp. 94–100. [18] d. knežević, m. blagojević, "application of deep extreme learning machine in network intrusion detection systems", facta universitatis series electronics and energetics, vol. 32, no. 4, 2019, pp. 529–538. [19] f. z. fagroud, h. toumi, e. lahmar, k. achtaich, s. filali, and y. baddi, "connected devices classification using feature selection with machine learning", iaeng international journal of computer science, vol. 49, no. 2, pp. 445–452, 2022. [20] p. ranjan, h. gupta, s. yadav, and a. sharma, "machine learning assisted optimization and its application to hybrid dielectric resonator antenna design", facta universitatis series electronics and energetics, vol. 36, no. 1, 2023, pp. 31–42. [21] a. rawat, r. n. yadav, and s. c. shrivastava. "neural network applications in smart antenna arrays: a review", aeu-international journal of electronics and communications, vol. 66, no. 11, pp. 903–912, 2012. [22] b. hamdi, s. limam, and t. aguili, "uniform and concentric circular antenna arrays synthesis for smart antenna systems using artificial neural network algorithm", progress in electromagnetics research b, vol. 67, pp. 91–105, 2016. [23] f. andriulli, p.-y. chen, d. erricolo, and j.-m. jin, "machine learning in antenna design, modeling, and measurements", guest editorial, ieee transactions on antennas and propagation, vol. 70, no. 7, 2022, pp. 4948–4952. [24] h. che, c. li, x. he, and t. huang, "a recurrent neural network for adaptive beamforming and array correction", neural networks, vol. 80, pp. 110–117, aug. 2016. [25] p. ramezanpour, m. j. rezaei, and m. r. mosavi, "deep-learningbased beamforming for rejecting interferences", signal processing, vol. 14, pp. 467–473, sep. 2020. [26] h. al kassir, z. d. zaharis, p. i. lazaridis, n. v. kantartzis, t. v. yioultsis, i. p. chochliouros, a. mihovska, and t. d. xenos, "antenna array beamforming based on deep learning neural network architectures" in proceedings of the 3rd ursi at-ap-rasc, gran canaria, 29 may–3 june 2022, ieee xplore, 2022, pp. 1–4. comparison of the performance of artificial neural network with variable step-size … 287 [27] i. mallioras, z. d. zaharis, and p. i. lazaridis, "a novel realistic approach of adaptive beamforming based on deep neural networks", ieee trans. on antennas and propagation, vol. 70, no. 10, pp. 8833–8848, 2022. [28] s. haykin, neural network and machine learning, 3rd ed., pearson international, 2009. [29] y. han, y. tao, w. zhang, w. cui, and t. shi, "perceptron neural network image encryption algorithm based on chaotic system", iaeng international journal of computer science, vol. 50, no. 1, pp. 42–50, 2023. [30] k. ghatak, a. senapati and j. s. roy, "investigations on adaptive beam forming for linear and planar smart antenna arrays using sample matrix inversion algorithm", international journal of computer applications (ijca), vol. 117, no. 8, pp. 47–50, may 2015. [31] b. samantaray, k. k. das and j. s. roy, "performance of smart antenna of dipole array", in proceedings of the 2nd intl. conf. on intelligent computing and advances in (icac-2019), nov. 15-17, 2019, iter, soa uni., bhubaneswar, 2019, springer lecture notes in networking and systems, vol. 109, 2019, pp. 424–431. [32] a. khan, a. senapati, and j. s. roy, "adaptive signal processing algorithm applied to the design of smart antenna in a cellular network considering phase quantization error", in proceedings of the 2nd intl. conf. on data science and applications (icdsa 2021), kolkata, springer lecture notes in networks & systems, april 10-11, 2021, vol. 288, nov. 2021, pp. 563–575. [33] y-s. lau, z. m. hussain, and r. j. harris, "a weight-vector lms algorithm for adaptive beamforming", in proceedings of the ieee tencon conference, new jersey, nov. 2004, pp. 494–498. [34] p. bhattacharyya, h. g. sastry, v. marriboyina, and r. sharma, "smart and innovative trends in next generation computing technologies", ngct 2017, dehradun, india, oct. 30-31, 2017, springer nature singapore, 2018. [35] a. h. sallomi and s. ahmed, "elman recurrent neural network application in adaptive beamforming of smart antenna system", intl. jnl. of computer applications (ijca), vol. 129, no. 11, pp. 38–43, 2015. instruction facta universitatis series: electronics and energetics vol. 32, no 4, december 2019, pp. 555-569 https://doi.org/10.2298/fuee1904555v © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd the influence of conductive passive parts on the magnetic flux density produced by overhead power lines  slavko vujević, tonći modrić university of split, faculty of electrical engineering, mechanical engineering and naval architecture, split, croatia abstract. there has been apprehension about the possible adverse health effects resulting from exposure to power frequency magnetic field, especially in the overhead power lines vicinity. research work on the biological effects of magnetic field has been substantial in recent decades. various international regulations and safety guidelines, aimed at the protection of human beings, have been issued. numerous measurements are performed and different numerical algorithms for computation of the magnetic field, based on the biotsavart law, are developed. in this paper, a previously developed 3d quasistatic numerical algorithm for computation of the magnetic field (i.e. magnetic flux density) produced by overhead power lines has been improved in such a way that cylindrical segments of passive conductors are also taken into account. these segments of passive conductors form the conductive passive contours, which can be natural or equivalent, and they substitute conductive passive parts of the overhead power lines and towers. although, their influence on the magnetic flux density distribution and on the total effective values of magnetic flux density is small, it is quantified in a numerical example, based on a theoretical background that was developed and presented in this paper. key words: cylindrical segments of passive conductors, magnetic flux density, self and mutual potential coefficients, self and mutual impedances 1. introduction extremely high-voltage overhead power lines are among the most significant sources of extremely low-frequency (elf) electric and magnetic fields. these fields change very slowly over time and are therefore considered quasistatic [1, 2]. hence, electric and magnetic fields are computed separately. potential long-term health effects of exposure arising from the power distribution system including overhead power lines, due to their proximity to residential areas and field levels they emit, have been extensively studied over received february 22, 2019; received in revised form april 23, 2019 corresponding author: tonći modrić university of split, faculty of electrical engineering, mechanical engineering and naval architecture, rudjera boškovica 32,21000 split, croatia (e-mail: tmodric@fesb.hr)  556 s. vujević, t. modrić the last few decades [3–6]. epidemiological studies have suggested that long-term low-level exposure to elf (50-60 hz) magnetic field might be associated with an increased risk of childhood leukaemia. however, there is no firm evidence of such adverse health effects related to prolonged exposure to elf magnetic field. the international commission on non-ionizing radiation protection (icnirp) recommends the exposure limits related to short-effects, called basic restrictions in their guidelines [7]. the exposure limits outside the body, called reference levels, are set to 1000 μt for occupational exposure and to 200 μt for general public exposure for 50 hz magnetic flux density. the assessment of human exposure to the magnetic field originating from overhead power lines is based on measurements or computations. measurements are performed in accordance with international standards [8– 10]. various methods for computation of elf magnetic field, such as method of moments (mom), finite-difference time-domain method (fdtd), finite element method (fem), charge simulation method (csm) and surface charge simulation method (scsm), are wellknown [11]. the magnetic field of the overhead power lines is computed using the biot-savart law. in simplified two-dimensional (2d) numerical algorithms [12–14] overhead power line conductors are infinitely long straight thin-wire horizontal lines parallel to the flat earth’s surface. the number of line sources equals the number of overhead power line phase conductors and shield wires, and the contribution of each of them is taken into account. in three-dimensional (3d) numerical algorithms [15–19] the catenary form of the overhead power line conductors can be taken into account and therefore, more accurate computation results can be obtained. the basis of this paper is a previously developed 3d algorithm for computation of the magnetic field (i.e. magnetic flux density) produced by overhead power lines. the catenary conductors are approximated by a set of straight thin-wire cylindrical conductor segments. moreover, the cylindrical segments of passive conductors are also taken into account using closed current contours, which substitute conductive passive parts of the overhead power lines and towers. because of the currents induced in them, they may have the influence on the magnetic flux density distribution. as anticipated, the influence is not as pronounced as in computation of the electric field intensity, especially in close vicinity of the towers and other passive parts that strongly distort the electric field. therefore, many researchers ignore their effect, but nevertheless, a theoretical background for taking into account conductive passive parts and their effect on the magnetic flux density distribution is developed herein. moreover, this influence has been quantified for the first time so far. expressions for self and mutual potential coefficients of cylindrical conductor segments are given. equations for self and mutual impedances per unit length of the conductive passive contours are derived and included in the system of linear equations for computation of currents in natural and equivalent conductive passive contours. finally, the sum of the contributions of cylindrical segments of active and passive conductors is taken into account for computation of the magnetic flux density. in the numerical example, two different cases are observed, the first where conductive passive parts (cpps) are neglected and the second where they are taken into account. the obtained results of the magnetic flux density distribution are shown and compared with available results from the literature. the influence of conductive passive parts on the magnetic flux density 557 2. conductive passive parts of the overhead power lines the magnetic flux density distribution at the arbitrary field point t (x, y, z) in the air of a two-layer medium can be computed using the well-known biot-savart law. one of the advanced 3d numerical algorithms for computation, sufficiently accurate as computation module hifreq of the cdegs software package, is presented in detail in [19]. in addition to the cylindrical segments of active conductors with known currents, the cylindrical segments of passive conductors can also be taken into account. in these cylindrical segments of passive conductors (i.e. current contours), the currents are induced and therefore, they have influence on the magnetic flux density distribution. conductive passive parts of the overhead power lines and towers can be described using closed current contours, approximated by a set of cylindrical conductor segments. the contours can be natural (fig. 1) or equivalent, that substitute parts of conductive passive surfaces. examples of conductive passive surfaces are overhead power line towers, fences or any other conductive passive parts in high-voltage substations, which can be modelled using straight thin-wire cylindrical conductor segments or using subparametric spatial 2d finite elements, as in [20]. hence, a network model of conductive passive surfaces is used herein. the cylindrical conductor segments, that form the conductive passive contours, are oriented from the start to the end point of the segment. the unit vector 0s  is assigned to each cylindrical segment. fig. 1 closed passive contour approximated with 5 cylindrical conductor segments 2.1. currents of the conductive passive contours the system of linear equations for computation of currents in conductive passive contours, written in matrix form, can be expressed as follows:                                                  s ns s ks nsnk ks nk ks ns ks k nk k kk nknk kk nk kk nk kk i i zz zz i i zz zz         1 ,1, ,11,11 ,1, ,11,1 (1) where nk is the total number of conductive passive contours, ns is the total number of active cylindrical conductor segments, k iki is the phasor of the ik-th conductive passive 558 s. vujević, t. modrić contour current, s ki is the phasor of the k-th active cylindrical conductor segment current, kk jkikz , is the mutual impedance of the ik-th and jk-th conductive passive contour, ks kikz , is the mutual impedance of the ik-th conductive passive contour and k-th cylindrical segment of active conductor. self impedance of the ik-th conductive passive contour is described by:          1 1 1 , , 1 , , ,1 , 2 ik ns is ik ns jk nsjs ikik jsis ik ns is ikik isis ik is iku is kk ikik ljljzz  (2) where ikns is the total number of segments of the ik-th conductive passive contour, iku isz ,1 is the internal impedance per unit length of the is-th cylindrical conductor segment of the ik-th conductive passive contour, ik is is the length of the is-th cylindrical conductor segment of the ik-th conductive passive contour, ikik isisl , , is the external inductance of the is-th cylindrical conductor segment of the ik-th conductive passive contour, ikik jsisl , , is the mutual inductance of the is-th and js-th cylindrical conductor segments of the ik-th conductive passive contour,  is the circular frequency and j is the imaginary unit. the internal impedance per unit length of the cylindrical conductor segment of the natural conductive passive contour is described by following expression [21, 22]: 1 0 0 0 1 0 ( ) 2 ( ) u j k rk z r j k r         (3) where k is the complex wave number, 0 r is the radius of the cylindrical conductor segment, v is the electrical conductivity of the cylindrical conductor segment, 0 0 ( )j k r is the complex bessel function of the first kind of order zero, 01( )j k r is the complex bessel function of the first kind of order one. the complex wave number k is defined by the following equation: )4/(exp2  jfk vv (4) where  is the magnetic permeability of the cylindrical conductor segment, f is the timeharmonic current frequency. the complex bessel function of the first kind of order nn can be written as [23, 24]: 2 0 2 ( ) ( 1) ! ( )! n m m n m k r j k r m n m                 (5) conductive passive surface can be replaced by a contour formed by a set of equivalent cylindrical conductor segments. radius of these segments is equal to [23]: vv v f d r   2 1 2 (6) where d is the skin depth of the wave into the conductive surface. the influence of conductive passive parts on the magnetic flux density 559 internal impedance per unit length of these conductor segments can be described using the following expression: 1 (1 ) 2 22 pu v v vv v e z z j rr h                (7) where vz is the wave impedance of the medium from which the conductive passive surface is made, ve is the phasor of electric field intensity on the surface of the conductor, vh is the phasor of magnetic field intensity on the surface of the conductor, p is the magnetic permeability of the surface. mutual impedance of the ik-th and the jk-th conductive passive contour is described by the following equation: kk ikjk ik ns is jk ns js jkik jsis kk jkik zljz , 1 1 , ,,      (8) where jkns is the total number of segments of the jk-th conductive passive contour, jkik jsisl , , is the mutual inductance of the is-th cylindrical conductor segment of the ik-th conductive passive contour and js-th cylindrical conductor segment of the jk-th conductive passive contour. mutual impedance of the ik-th conductive passive contour and k-th cylindrical segment of active conductor is defined by the following expression:    ik ns is ik kiskik ljz ks 1 ,, (9) where ik kisl , is the mutual inductance of the is-th cylindrical conductor segment of the ikth conductive passive contour and k-th cylindrical segment of active conductor. 2.2. self and mutual inductances of the cylindrical conductor segments self inductance of the cylindrical conductor segment is described by the following expression: isis un isis pssεl ,00,  (10) where isis un pss , is the self potential coefficient of the is-th cylindrical conductor segment in homogeneous unbounded dielectric medium with permittivity 0  , which can be computed as described in detail in chapter 3. mutual inductance of the is-th and js-th cylindrical conductor segment, which can be cylindrical segment of active conductor or part of conductive passive contour, is described using the following expressions: ,, 0 0 0 0 ,( ) un is jsis js is js js isl s s pss l       (11) where iss0  is the unit vector of the is-th cylindrical conductor segment, jss0  is the unit vector of the js-th cylindrical conductor segment, jsis un pss , are the mutual potential 560 s. vujević, t. modrić coefficients of the is-th and js-th cylindrical conductor segments in homogeneous unbounded dielectric medium with permittivity 0 , which can be computed as described in detail in chapter 3. 3. self and mutual potential coefficients of the cylindrical conductor segments self potential coefficients of the cylindrical conductor segments in homogeneous unbounded dielectric medium are described by the following expression: 0 0 ( , ) 4 π ε un i ii p r pss    (12) where auxiliary function p is defined [25] as:             vvv v vp 22 222 ln2),(    (13) according to [26], two cylindrical conductor segments can be parallel or nonparallel. two parallel cylindrical conductor segments, i-th and j-th, in homogeneous unbounded dielectric medium are shown in fig. 2. further, i-th cylindrical conductor segment with endpoints t1 (u1, vi) and t2 (u2, vi) is observed in the local coordinate system (u, v) of the j-th cylindrical conductor segment. fig. 2 two parallel cylindrical conductor segments in homogeneous unbounded dielectric medium mutual potential coefficients of two parallel cylindrical conductor segments, i-th and j-th segment, in homogeneous unbounded dielectric medium can be obtained from the following expression: 1 2 3 4 0( ) / 4 un ijpss c c c c ε      (14) where auxiliary function ck (k = 1, 2, 3, 4) is described by: 2222ln ikkikkk vwwvwwc       (15) the influence of conductive passive parts on the magnetic flux density 561 2/21 juw  (16) 2/12 juw  (17) 2/13 juw  (18) 2/24 juw  (19) in a case of two nonparallel cylindrical conductor segments, there is always one and only one pair of parallel planes, 1 and 2 in which these segments lie (fig. 3). in a limiting case, these two planes overlap and then, nonparallel segments lie on intersecting straight lines. fig. 3 two nonparallel cylindrical conductor segments in homogeneous unbounded dielectric medium mutual potential coefficients of two nonparallel cylindrical conductor segments in homogeneous unbounded dielectric medium, defined by using the galerkin-bubnov method, are described by:         2 1 2 1 0ε4 1 ij ij un r dd pss (20) where the mutual distance between points on the axes of the segments is equal to:  cos2222 drij (21) where d is the distance between the parallel planes on which segments lie,  is the angle between lines on which the segments lie,  is the distance of the observed point on the axis of the i-th segment and the start point o1,  is the distance of the observed point on the axis of the j-th segment and the start point o2. 562 s. vujević, t. modrić after the double integration in (20) is carried out, the following expression, known as cejtlin’s formula [25], can be obtained: 1 1 2 2 1 2 2 1 0 0 ( , ) ( , ) ( , ) ( , ) 4 4 un ij a a a a pss                     (22) where 1 ( , ) ln ( cos ) ln( cos ) 2 tan tan sin 2 ij ij ij a r r rd d                                   (23) self potential coefficients of the i-th cylindrical conductor segment, with linear charge density iλ approximated by a constant, in the air of the two-layer medium (fig. 4) can be computed, using the well-known image method: sii un rii un ii psskpsspss  (24) where sii un pss is the mutual potential coefficient of the i-th cylindrical conductor segment and its image in homogeneous unbounded dielectric medium with permittivity 0, whereas rk is the reflection coefficient derived for a point current source [23, 27, 28] which can be approximated to high accuracy by 1rk for power line frequencies as a consequence of assumption that the earth’s conductivity is infinite. fig. 4 cylindrical conductor segment in the air of the two-layer medium and its image if i-th and j-th cylindrical conductor segments are in the air of the observed two-layer medium (fig. 5), their mutual potential coefficient can be expressed by image method: sij un rij un ij psskpsspss  (25) where sij un pss is the mutual potential coefficient of the i-th cylindrical conductor segment and image of the j-th cylindrical conductor segment in homogeneous unbounded dielectric medium with permittivity .0 the influence of conductive passive parts on the magnetic flux density 563 fig. 5 two cylindrical conductor segments and the image from one of them 4. numerical example in order to estimate the influence of conductive passive parts on the magnetic flux density distribution, a computer program was developed, in which these passive parts can be considered on the basis of the presented theory. in the numerical example, two spans between three identical towers of a typical 400 kv overhead power line, each carrying three phases with two conductors in the bundle per phase and two shield wires are observed (fig. 6). detailed input data concerning the tower geometry, the maximum and minimum heights of all conductors and sags, radii of all phase conductors and shield wires, the length of the overhead power line span, as well as electrical input data are given in [20]. the maximum allowed symmetrical currents for cross section of the chosen phase conductors and symmetrical operating conditions have been assumed. two different cases are observed. in the first case, only phase conductors and shield wires (16 catenaries, each approximated using 60 thin-wire cylindrical segments of active and passive conductors) are taken into account, whereas conductive passive parts (cpps) are neglected. in the second case, in addition to aforementioned catenaries, a central tower is approximated using 68 thin-wire cylindrical segments of passive conductors and 40 conductive passive contours are taken into account. the electrical conductivity of the cylindrical conductor segments  is equal to 7 ms/m, while the magnetic permeability of the cylindrical conductor segments  is equal to 500. computation of the magnetic flux density distribution is carried out at height of 1 m above the earth’s surface in the close vicinity of a central tower along observed xand y-axes in a total of 500 points. fig. 6 simplified representation of the overhead power line 564 s. vujević, t. modrić figures 7–10 present computed effective (rms) values of the total magnetic flux density and its components along x-axis, whereas figures 11–14 present computed effective (rms) values of the total magnetic flux density and its components along y-axis for the aforementioned two cases. maximum absolute deviations of the computed total magnetic flux density distribution along xand y-axes for two cases in the chosen example are equal to 0.15 % and 0.89 %, respectively. as expected, according to well-known parameters affecting the magnetic flux density distribution, these absolute deviations due to conductive passive parts are small. nevertheless, they have not been quantified so far. the maximum computed value of the magnetic flux density, obtained in this example, in the close vicinity of a central tower (fig. 7) is equal to 16.84 μt, as well as the maximum computed value obtained under the midspan of the overhead power lines, which is equal to 31.83 μt, are substantially less than the exposure limits given in [7]. fig. 7 distribution of the total magnetic flux density along x-axis fig. 8 magnetic flux density x-component along x-axis the influence of conductive passive parts on the magnetic flux density 565 fig. 9 magnetic flux density y-component along x-axis fig. 10 magnetic flux density z-component along x-axis fig. 11 distribution of the total magnetic flux density along y-axis 566 s. vujević, t. modrić fig. 12 magnetic flux density x-component along y-axis fig. 13 magnetic flux density y-component along y-axis fig. 14 magnetic flux density z-component along y-axis the influence of conductive passive parts on the magnetic flux density 567 in order to verify the accuracy of the presented algorithm, the magnetic flux density results computed by efc-400ep software [29] are shown in several points are compared to computed results obtained by numerical algorithm given herein (fig. 15) and a very good agreement can be seen. detailed input data of a 400 kv overhead power line are given in [29]. fig. 15 comparison of computed magnetic flux density results obtained by presented algorithm with results computed by efc-400ep software table 1 shows percent errors (p.e.) of magnetic flux density results obtained by presented algorithm with respect to results computed by efc-400ep software, in chosen points, given in fig. 15, along observed x-axis. table 1 percent errors of magnetic flux density results obtained by presented algorithm with respect to results computed by efc-400ep software x (m) p.e. (%) 0 3.276 2.5 3.033 5.0 2.727 7.5 0.995 10.0 0.389 12.5 2.021 15.0 2.541 17.5 3.317 20.0 1.588 22.5 3.503 25.0 4.807 5. conclusion in this paper, a 3d quasistatic numerical model for taking into account conductive passive parts of the overhead power lines and their effect on the computation of the magnetic flux density distribution is presented. the catenary conductors of the overhead 568 s. vujević, t. modrić power line span are approximated by a set of straight thin-wire cylindrical conductor segments. besides cylindrical segments of active conductors, the cylindrical segments of passive conductors are also taken into account using closed current contours, which can be natural or equivalent. these conductive passive parts have small influence on the magnetic flux density distribution, which has been quantified herein. primarily, it is due to extremely low-frequency of the magnetic flux density produced by overhead power lines. an originally developed theoretical background is described in detail, including expressions for self and mutual potential coefficients of cylindrical conductor segments and expressions for self and mutual impedances per unit length of the conductive passive contours. an influence of conductive passive parts on the magnetic flux density is shown and quantified in the chosen numerical example of a typical 400 kv overhead power line. references [1] r. g. olsen and p. s. wong, "characteristics of low frequency electric and magnetic fields in the vicinity of electric power lines", ieee transactions on power delivery, vol. 7, no. 4, pp. 2046–2055. [2] r. fitzpatrick, maxwell’s equations and the principles of electromagnetism. infinity science press llc, hingham, 2008. [3] n. wertheimer and e. leeper, "electrical wiring configurations and childhood cancer", american journal of epidemiology, vol. 109, no. 3, pp. 273–284, 1979. [4] j. c. teepen and j. a. van dijck, "impact of high electromagnetic field levels on childhood leukemia incidence", international journal of cancer, vol. 131, no. 4, pp. 769–778, 2012. [5] international agency for research on cancer, monographs on the evaluation of carcinogenic risks to humans, non-ionizing radiation, part 1: static and extremely low-frequency (elf) electric and magnetic fields, vol. 80, iarcpress, lyon, france, 2002. [6] world health organization, extremely low frequency fields, environmental health criteria monograph no. 238, who press, geneva, 2007. [7] international commission on non-ionizing radiation protection, guidelines for limiting exposure to time-varying electric and magnetic fields (1 hz to 100 khz), health physics, vol. 99, no. 6, pp. 818–836, 2010. [8] ieee standard procedures for measurement of power frequency electric and magnetic fields from ac power lines, ieee standard 644-1994. doi: 10.1109/ieeestd.1995.122621. [9] measurement of dc magnetic, ac magnetic and ac electric fields from 1 hz to 100 khz with regard to exposure of human beings – part 1: requirements for measuring instruments, iec std 61786–1, 2013. [10] measurement of dc magnetic, ac magnetic and ac electric fields from 1 hz to 100 khz with regard to exposure of human beings – part 2: basic standard for measurements, iec standard 61786–2, 2014. [11] p. zhou, numerical analysis of electromagnetic fields. springer-verlag, berlin heidelberg, 1993. [12] c. garrido, a. f. otero and j. cidrás, "low-frequency magnetic fields from electrical appliances and power lines", ieee transactions on power delivery, vol. 18, no. 4, pp. 1310–1319, 2003. [13] g. filippopoulos, d. tsanakas, "analytical calculation of the magnetic field produced by electric power lines", ieee transactions on power delivery, vol. 20, no. 2, pp. 1474–1482, 2005. [14] f. moro and r. turri, "fast analytical computation of power-line magnetic fields by complex vector method", ieee transactions on power delivery, vol. 23, no. 2, pp. 1042–1048, 2008. [15] g. lucca, "magnetic field produced by power lines with complex geometry", european transactions on electrical power, vol. 21, no. 1, pp. 52–58, 2011. [16] a. z. el dein, "magnetic-field calculation under ehv transmission lines for more realistic cases", ieee transactions on power delivery, vol. 24, no. 4, pp. 2214–2222, 2009. [17] j. c. salari, a. mpalantinos and j. i. silva, "comparative analysis of 2and 3-d methods for computing electric and magnetic fields generated by overhead transmission lines", ieee transactions on power delivery, vol. 24, no. 1, pp. 338–344, 2009. [18] b. zemljaric, "calculation of the connected magnetic and electric fields around an overhead-line tower for an estimation of their influence on maintenance personnel", ieee transactions on power delivery, vol. 26, no. 1, pp. 467–474, 2011. the influence of conductive passive parts on the magnetic flux density 569 [19] t. modrić, s. vujević and d. lovrić, "3d computation of the power lines magnetic field", progress in electromagnetics research m, vol. 41, pp. 1–9, 2015. [20] t. modrić and s. vujević, "computation of the electric field in the vicinity of overhead power line towers", electric power systems research, vol. 135, pp. 68–76, 2016. [21] s. vujević, v. boras and p. sarajčev, "a novel algorithm for internal impedance computation of solid and tubular cylindrical conductors", international review of electrical engineering, vol. 4, no. 6, pp. 1418–1425, 2009. [22] d. lovrić, v. boras and s. vujević, "accuracy of approximate formulas for internal impedance of tubular cylindrical conductors for large parameters", progress in electromagnetics research m, vol. 16, pp. 177– 184, 2011. [23] j. a. stratton, electromagnetic theory. mcgraw-hill book company, new york and london, 1941. [24] m. r. spiegel, s. lipschutz and j. liu, mathematical handbook of formulas and tables, fourth ed., mcgraw-hill education, new york, 2012. [25] l. r. neiman and p. l. kalantarov, theoretical fundamentals of electrical engineering, part 3: theory of electromagnetic field, gosenergoizdat, moscow, leningrad, 1959 (in russian). [26] w. h. mccrea, analytical geometry of three dimensions. dover publications, new york, 2006. [27] s. vujević and p. sarajčev, "potential distribution for a harmonic current point source in horizontally stratified multilayer medium", compel: the international journal for computation and mathematics in electrical and electronic engineering, vol. 27, no. 3, pp. 624–637, 2008. [28] t. takashima, t. nakae and r. ishibashi, "high frequency characteristics of impedances to ground and field distributions of ground electrodes", ieee transactions on power apparatus and systems, vol. pas100, no. 4, pp. 1893–1900, 1981. [29] s. carsimamovic, z. bajramovic, m. rascic, m. veledar, e. aganovic and a. carsimamovic, "experimental results of elf electric and magnetic fields of electric power systems in bosnia and herzegovina", in proceedings of eurocon 2011, international conference on computer as a tool, lisbon, portugal, 2011, pp. 1–4. instruction facta universitatis series: electronics and energetics vol. 29, no 2, june 2016, pp. 285 296 doi: 10.2298/fuee1602285p dielectric properties of la/mn codoped barium titanate ceramics  vesna paunović 1 , vojislav mitić 1,2 , miloš marjanović 1 , ljubiša kocić 1 1 university of niš, faculty of electronic engineering, niš, serbia 2 institute of technical sciences of sasa, belgrade, serbia abstract. la/mn codoped batio3 ceramics with various la2o3 content, ranging from 0.3 to 1.0 at% la, were investigated regarding their microstructure and dielectric properties. the content of mno2 was kept constant at 0.01 at% mn in all samples. la/mn codoped and undoped batio3 were obtained by a modified pechini method and sintered in air at 13000c for two hours. the homogeneous and completely fine-grained microstructure with average grain size from 0.5 to 1.5m was observed in samples doped with 0.3 at% la. in high doped samples, apart from the fine grained matrix, the appearance of local area with secondary abnormal grains was observed. the dielectric properties were investigated as a function of frequency and temperature. the dielectric permittivity of the doped batio3 was in the range of 3945 to 12846 and decreased with an increase of the additive content. the highest value for the dielectric constant at room temperature (r= 12846) and at the curie temperature (r= 17738) were measured for the 0.3 at% la doped samples. the dissipation factor ranged from 0.07 to 0.62. the curie constant (c), curie-weiss temperature (t0) and critical exponent () were calculated using the curie-weiss and the modified curie-weiss law. the highest values of curie constant (c=3.27105 k) was measured in the 1.0 at% la doped samples. the obtained values for  ranged from 1.04 to 1.5, which pointed out the sharp phase transformation from the ferroelectric to the paraelectric phase. key words: barium titanate, ceramics, dielectrical properties 1. introduction barium titanate has attracted a considerable amount of attention over the years due to its excellent physical and electrical properties and numerous practical applications 1-3. the batio3 based ceramics are widely used for multilayer capacitors (mlccs), ptc thermistors, varistors, and dynamic random access memories (dram) in integrated circuits 4-6. for mlc applications, dielectric materials need to be electrically insulating and received may 8, 2015; received in revised form october 20, 2015 corresponding author: vesna paunović faculty of electronic engineering, university of niš, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: vesna.paunovic@elfak.ni.ac.rs) 286 v. paunović, v. mitić, m. marjanović, lj. kocić exhibit high permittivity values and low dielectric losses at room temperature. as overload protection devices, they are required to be semiconducting at room temperature and undergo a sharp rise in resistivity when heated above the ferroto paraelectric phase transition temperature, tc 7. at room temperature, batio3 adopts a tetragonal perovskite structure and is a ferroelectric with high permittivity. it transforms to the cubic, paraelectric state at the curie temperature, tc of 132°c. also, undoped batio3 is electrically insulating at room temperature. the dielectric properties of batio3 depend on the synthesis method, density, grain size, and sintering procedure. consequently, there is a considerable interest in the preparation the powder of high homogeneity and a ceramics of high density and small grain size. the homogeneous starting powders can be obtained by conventional solid state reaction, oxalate precipitation method and modified pechini process 8, 9. the pechini method of preparation has the advantage in raising the permittivity of modified batio3, compared with the samples obtained by the conventional solid state sintering. the electrical and dielectric properties of batio3 ceramics can be modified by using various types of additives, as well as processing procedures 10-12. generally, ions with large radius and low valence like la 3+ , ca 2+ , dy 3+ and y 3+ , tend to enter the a sites (ba 2+ sites), while ions with small radius and higher valence like nb 5+ and ta 5+ favor the b sites (ti 4+ ) 13-17. substitution of the barium or titanium ion with small concentrations of ions with a similar radius could lead to structure and microstructure changes, and furthermore, modify the dielectric and ferroelectric properties. some of the dopants shift transition temperature of batio3 or induce broadening of rt curve and many of them cause diffuseness of ferroelectric transition. the phase transition from the ferroelectric to the paraelectric phase can be with sharp dielectric maximum or with diffuse dielectric maximum which is characteristic for relaxor ceramics. according to literature data, partial substitution of ba or ti ions with dopants such as la, zn and sb cause the formation of diffuse phase transition, high dielectric constant and low losses, and sn, ce, zr, bi, hf cause the appearance of ferroelectric relaxor behavior [17]. the addition of cazro3 in batio3 ceramic enhances the capacitance of capacitor and reduces the curie temperature 18. dielectric behavior of nb 5+ modified batio3 ceramics was leaded by the presence of nonferroelectric regions and causes to decrease in the value of dielectric constant. the shift of curie temperature towards lower temperature side is attributed to the replacement of ba 2+ with bi 3+ 19. the addition of sb affects to the grain growth inhibition and formation uniform microstructure and also to increase the dielectric constant. among the additives, lanthanum, la, is the most efficient in raising the dielectric permittivity of modified batio3 ceramics 20-22. la as donor dopant decreases the grain size and enhances the dielectric constant. in la doped ceramics the curie temperature was shifted towards lower temperatures and dielectric constant values were much higher than in pure batio3. also, it was found that the dielectric losses decrease with addition of la in batio3. at higher concentration of la, dielectric maximum was broadened. the relaxor-type frequency dependence of permittivity was also found in batio3. the substitution of la 3+ on the ba 2+ sites requires the formation of negatively charged defects. there are three possible compensation mechanisms: barium vacancies (vba // ), titanium vacancies (vti //// ) and electrons (e / ) 23-25. dielectric properties of la/mn codoped barium titanate ceramics 287 small additions of lanthanum (< 0.5 at%) which replace the ba ions, leads to the formation of a bimodal microstructure and n-type semiconductivity, which has been widely believed to occur via an electronic compensation mechanism, if the samples are heated in a reducing or argon atmosphere. la2o3+2tio2  2la  ba +e (1) in heavily doped samples ( 0.5 at%) sintered in air atmosphere, which are characterized by a small grained microstructure, a high insulation resistance and life stability of the multilayer capacitors can be achieved. the principal doping mechanism is the ionic compensation mechanism (titanium vacancy compensation mechanism). la2o3+3tio2  2la  ba + //// tiv +3titi +9oo (2) for low partial pressure of oxygen, the characterized mechanism is electronic compensation mechanism, while for high pressures it is the characteristic ionic compensation mechanism. mno2 are frequently added to batio3, together with other additives, in order to reduce the dissipation factor. manganese has double role, as acceptor dopant incorporated at ti 4+ sites, it can be used to counteract the effect of the oxygen vacancies donors. as additive, segregating at grain boundaries, can prevent the exaggerated grain growth. manganese belongs to the valence unstable acceptor-type dopant, which may take different valence states, mn 2+ , mn 3+ or even mn 4+ during post sintering annealing process. mn 2+ is stable in cubic phase and easily oxidized to mn 3+ state which is more stable in tetragonal phase. for codoped systems 26-28, the formation of donor-acceptor complexes such as 2[laba  ][mnti  ] prevent a valence change from mn 2+ to mn 3+ . generally, in codoped batio3 ceramics, the controlled incorporation of donor dopant, such as la, in combination with an acceptor (mn) leads to the formation ceramics with uniform microstructure and high dielectric constant at room temperature as well as at curie temperature. the codoped ceramic showed lower value of dielectric losses compared to the undoped ceramics. also, one of the reasons they used a modified batio3 is that the additives have the effect of moving the curie temperature in the temperature field that can be used effectively, significantly below 132c. the purpose of this paper is to study the dielectric properties of la/mn codoped batio3 ceramics, obtain by pechini method, as a function of different dopant concentrations. the curie-weiss and modified curie-weiss law were used to clarify the influence of dopant on the dielectric properties of batio3. 2. experiments and methods the la/mn codoped batio3 ceramics were prepared from organometallic complex based on the modified pechini procedure 9 starting from barium and titanium citrates. this method provides a low-temperature powder synthesis process (below 800c), good stoichiometry and easy incorporation of dopants in the crystal lattice. the content of additive oxides, la2o3, ranged from 0.3 to 1.0 at%. the content of mno2 was kept constant at 0.01 at% in all samples. for comparison purposes the samples free of la and mn were prepared in the same manner. the modified pechini process was carried out as a three stage process 288 v. paunović, v. mitić, m. marjanović, lj. kocić for the preparation of a polymeric precursor resin. solutions of titanium citrate and barium citrate were mixed, heated at 90c and then the la and mn were added. the temperature was raised to 120–140c, to promote polymerization and remove the solvents. the decomposition of most of the organic carbon residue was performed in an oven at 250c for 1 h and then at 300c for 4 h. thermal treatment of the obtained precursor was performed at 500c for 4 h, 700c for 4 h and 800c for 2 h. after drying at room temperature and passing through sieve, the barium titanate powder was obtained. the powders were isostatically pressed at 98 mpa into disk of 10 mm in diameter and 2 mm of thickness. the samples were sintered in air atmosphere at 1300c for 2 h and the heating rate was 10c /min. the bulk density was measured by the archimedes method. the specimens are denoted such as 0.3 la/mn-batio3 for specimen with 0.3 at% la and 0.01 at% mn and so on. the microstructures of the sintered or chemically etched samples were observed by scanning electron microscope jeol-jsm 5300 equipped with eds (qx 2000s) system. capacitance and dissipation factor was measured using an agilent 4284a precision lcr meter in the frequency range from 20hz to 1 mhz. the variation of the dielectric permittivity with temperature was measured in the temperature interval from 20 to 180c. the dielectric parameters such as curie-weiss temperature (t0), curie constant (c) and critical exponent  were calculated according to curie-weiss and modified curie-weiss law. 3. microstructure characteristics the relative density of the la/mn codoped samples varied from 90% to 95 % of theoretical density (td), depending on the amount of additives, being lower for higher dopant additive concentration. the main characteristic of the low doped samples, the samples doped with 0.3at% of la is a completely fine grained and homogeneous microstructure with fairly narrow size distribution. the grain sizes were ranged from 0.5 to 1.5 m (fig.1a) and no evidence of any secondary abnormal grain growth. with an increase of the additive content, the microstructure of the specimens doped with 0.5 at% of la showed quite significant grain growth with varied grain size. besides a small amount of 1 m grains, most of the grains were approximately 3-8 µm (fig.1b). fig. 1 sem images of la/mn codoped batio3, a) 0.3at% la and b) 0.5 at% la. dielectric properties of la/mn codoped barium titanate ceramics 289 the microstructure evolution in the samples doped with 1.0 at% of la was quite different from that observed in the other samples. in 1.0 at% la doped samples, apart from the fine grained matrix with grain size of 2-3 µm, some local area with secondary abnormal grains (fig.2a) were observed. the secondary abnormal grains size was in the range 10-15 µm. for undoped batio3 ceramics, (fig. 2b) the microstructure displayed the characteristic non-uniform microstructure and grain size distribution from 1-15 µm. fig. 2 sem images of a) 1.0 at% la/mn codoped batio3 and b) undoped batio3 ceramics. the difference in microstructural features is also associated with the inhomogeneous distribution of la as can be seen in the eds spectra taken from different areas in the same sample (fig. 3). the existence of x-ray peaks for lanthanum (l-la peak) in the 1.0 at% doped sample in eds spectrum indicates that la-rich regions are in coexistence with the nominal perovskite phase. it is worth noting that the concentrations less than 1.0 at% could not be detected by the eds attached to the sem, unless an inhomogeneous distribution or segregation of the additive was present. the la-rich regions are associated with the small grained microstructure, whereas eds spectrum free of la-content corresponds to the abnormal grains. also, the eds analysis did not reveal any content of mn, thus a homogeneous distribution of mn trough the specimens can be assumed. fig. 3 sem/eds images of 1.0 la/mn codoped batio3. 290 v. paunović, v. mitić, m. marjanović, lj. kocić 3. dielectrical characteristics all la/mn doped samples that were investigated are electrical insulators with an electrical resistivity   10 8 cm at room temperature. the high resistivity indicates that the ionic compensation mechanism (titanium vacancy compensation mechanism) is exclusively involved during the la incorporation into the batio3 matrix, and due to the immobility of cation vacancies, at room temperature, the doped samples remain insulating. the observed microstructural characteristics, which depend on the type and concentration of additive, have a direct influence on the dielectric properties. dielectric properties of batio3 ceramics (dielectric permittivity r and dissipation factor tan) were measured as a function of frequency and temperature. dielectric constant was determined in the frequency range from 20 hz to 1 mhz. after the initial high value at low frequency, dielectric constant becomes nearly constant at frequency greater than 10 khz. with an increase of additive content, the dielectric constant decreases. the highest value of the dielectric constant (r = 12846) was measured for samples doped with 0.3 at% of la characterized by small-grained microstructure and high sintering density (fig. 4). the lowest value of dielectric constant (r = 5200) was measured for 1.0 at% la doped samples. for the undoped batio3 ceramic, the dielectric constant was 2230 and for these samples dielectric constant was essentially independent of frequency. fig. 4 dielectric constant of undoped and la/mn-batio3 ceramics as a function of frequency. the dielectric loss (tan) values are in a wide range from 0.07 to 0.62 (fig 5). the main characteristics for all doped specimens are that after the initial high dielectric loss values, the tan decreases and are nearly independent of frequency greater than 20 khz. the highest value of tan, and a considerable change of tan vs. frequency from 0.61 to 0.2 were recorded in 0.3la/mn doped batio3 ceramics. dielectric properties of la/mn codoped barium titanate ceramics 291 fig. 5 the dielectric losses as a function of frequency for undoped and la/mn-batio3 ceramics. the dielectric properties of batio3 ceramics also can be analyzed through the permittivitytemperature dependence (fig. 6). the variation of the dielectric constant as a function of temperature clearly displays the effects of additive content and microstructural composition on dielectric properties. the highest value of the dielectric constant at room temperature (εr =12846) and at curie temperature (εr = 17738), was measured for the 0.3la/mn codoped batio3 samples, which is characterized also by a small grained and uniform microstructure and high density. fig. 6 dielectric constant of batio3 ceramics as a function of temperature. 292 v. paunović, v. mitić, m. marjanović, lj. kocić with an increase of additive content the dielectric constant decreases. for the samples doped with 1.0 at% la, the dielectric constant at room temperature is 3945 and at curie temperature is 8270. the variations in dielectric constant in low and heavily codoped la/mn ceramics, sintered at the same temperature, can be attributed on one hand to the different density (where density decreases with an increase of additive content); and on the other hand, to the presence of a la-rich phase and formation of secondary abnormal grains that obviously lead to a decrease in the dielectric permittivity. in general, the pronounced permittivity-temperature response and a sharp phase transition, from ferroelectric to paraelectric phase at curie temperature, are observed for all doped batio3 samples and for undoped batio3. it can be seen from the ratio of permittivity at curie point (εrmax) and room temperature (εrmin) i.e. (εrmax/εrmin) which for 0.3 at% doped samples has a value of 1.38, for the 0.5la/mn doped samples is 1.7, and for the 1.0 at% doped batio3 is 2.09. the curie temperature (tc) for codoped samples is shifted towards low temperature compared to undoped batio3 ceramics for which the curie temperature is 134c. for doped samples, the tc ranged from 110c for 0.3la/mn batio3 to 122c for 1.0la/mn batio3 ceramics (table 1). the shift of curie temperature for the codoped ceramics was heavily dependent on the ratio donor/acceptor. in the 0.3la/mn-batio3 ceramics, the donor/acceptor ratio is 30, and in 1.0la/mn is 100. with increasing la concentrations and the formation of donoracceptor complexes 2[laba  ]-[mnti  ], the possibility of oxidation mn 2+ to mn 3+ and mn 4+ state was reduced. so the influence of mn on the shift in curie temperature in 1.0la/mn batio3 ceramics was smaller. fig. 7 reciprocal value of r in function of temperature. dielectric properties of la/mn codoped barium titanate ceramics 293 all specimens have a sharp phase transition and follow the curie-weiss law: 0tt c r   (3) where c is the curie constant and t0 curie-weiss temperature, which is close to the curie temperature. the curie-weiss temperature (t0) was obtained from the linear extrapolation of the inverse dielectric constant of temperature above tc down to zero (fig. 7). the curie-weiss temperature decreased with an increase of additive concentration. the curie constant (c) was obtained by fitting the plot of the inverse values of the dielectric constant vs. temperature, and represents the slope of this curve for data above the tc. with an increase of dopant amount, the curie constant (c) increased. the highest value of c (c = 3.2710 5 k) was measured for the 1.0 at% la doped samples. the value of the curie constant is related to the grain size and porosity of the samples. the curie constant for undoped batio3 ceramic is (c = 2.12105k). the curie constant and the curie-weiss temperature values are given in table 1. in order to investigate the curie-weiss behavior, the modified curie-weiss law was used 29 max / max ( )1 1 r r t t c       (4) where r is dielectric constant, rmax maximum value of dielectric constant, tmax temperature where the dielectric value has its maximum,  critical exponent for diffuse phase transformation (dpt) and c / the curie-weiss-like constant. the dielectric parameters for undoped and doped batio3 ceramics, together with the values calculated according to modified curieweiss law, are given in table 1. table 1 dielectric parameters for undoped and la/mn codoped batio3 samples r at 300k r at tc tan  at (300k) tc [0c] t0 [0c] c [k] 105  pure batio3 2230 5488 0.067 134 101.1 2.12 1.402 0.3la/batio3 12846 17738 0.610 110 106.9 1.95 1.509 0.5la/batio3 6550 11196 0.248 118 94.8 2.67 1.044 1.0la/batio3 3945 8270 0.177 122 87.1 3.27 1.536 the critical exponent of the nonlinearity  was calculated from the best fit of the curve ln(1/r  1/m) vs. ln (t  tm), as shown in fig. 8. the critical exponent  represents the slope of the curve. for a single batio3 crystal, the  is 1.08 and gradually increases up to 2 for diffuse phase transformation in doped batio3. 294 v. paunović, v. mitić, m. marjanović, lj. kocić fig. 8 the modified curie-weiss plot ln(1/r 1/m) vs. ln (ttm) for batio3 samples. the slope of the curve determines the critical exponent . as can be shown in fig.8, the critical exponent  value is in the range from 1.044 to 1.536, which is in agreement with the experimental data. these samples are characterized by a sharp phase transition from ferroelectric to paraelectric phase at the curie point. the highest value for the critical exponent  ( = 1.536) was calculated in the 1.0 at% la/mn doped samples. 4. conclusion the dielectric properties of la/mn codoped ceramics depends heavily on the additive concentration and obtained microstructure during sintering. all samples have a resistivity of 10 8 cm and they are electrical insulators at room temperature. the highest value of the dielectric constant was achieved at room temperature (r=12846) and at the curie temperature (r=17738), and these values were measured for the 0.3 at% la/mn doped ceramics. this composition displayed a high density and small grained microstructure. with an increase of the additive content, the dielectric constant decreased; for the samples doped with 1.0 at% la, the r is 3945. the differences in dielectric constant values in low and heavily doped batio3 are due first to the different density (porosity) of doped ceramics and secondly to the presence of non-ferroelectric la rich regions and secondary abnormal grains. the dielectric loss values are in a wide range from 0.07 to 0.62. after initially greater dielectric loss values at low frequency, the tan decreases and are nearly independent of frequency greater than 20 khz. all specimens followed a curie-weiss low with sharp phase transition. the curie temperature of doped batio3 ceramics was shifted towards low temperature compared to undoped batio3. the curie temperature values ranged from 110c for 0.3la/mn batio3 to 122c for 1.0la/mn batio3 ceramics. the curie constant dielectric properties of la/mn codoped barium titanate ceramics 295 increases with increase of additive content. the highest value of c (c = 3.2710 5 k) was measured in samples doped with 1.0 at% of la. the critical exponent  is in the range from 1.044 to 1.536 and pointed out the sharp phase transformation from ferroelectric to paraelectric phase at curie temperature. acknowledgement: this research is a part of the project “directed synthesis, structure and properties of multifunctional materials” (172057). the authors gratefully acknowledge the financial support of serbian ministry of education, science and technological development for this work. references [1] h. kishi, n. kohzu, j. sugino, h. ohsato, y. iguchi, t. okuda, "the effect of rare-earth (la, sm, dy, ho and er) and mg on the microstructure in batio3", j. e. ceram. soc. vol. 19, pp. 1043-1046, 1999. [2] lj. zivkovic, v. paunovic, n. stamenkov, m. miljkovic, "the effect of secondary abnormal grain growth on the dielectric properties of la/mn co-doped batio3 ceramics", science of sintering, vol.38, pp. 273-281, 2006. [3] m. vijatovic petrovic, j. bobic, t. ramoska, j. banys, b. stojanovic, "electrical properties of lanthanum doped barium titanate ceramics, materials characterization, vol. 62, pp.1000-1006, 2011. [4] d.h. kuo, c.h. wang, w.p. tsai, "donor and acceptor cosubstituted batio3 for nonreducible multilayer ceramic capacitors", ceramics international, vol. 32, pp.1-5, 2006. [5] j. qi, z. gui, y. wang, q. zhu, y. wu, l. li, "ptcr effect in batio3 ceramics modified by donor dopant", ceramic international, vol. 28, pp.141-143, 2002. [6] m. wegmann, r. bronnimann, f. clemens, t. graule, "barium titanate-based ptcr thermistor fbers: processing and properties", sens. actuators a: phys., vol. 135 (2), pp. 394–404, 2007. [7] e. brzozowski, m.s. castro, "conduction mechanism of barium titanate ceramics", ceramics international, vol. 26, pp. 265-269, 2000. [8] w. caia, c. fu, z. lin, x. deng, w. jiang, "influence of lanthanum on microstructure and dielectric properties of barium titanate ceramics by solid state reaction", advanced materials research, vol. 412, pp. 275-279, 2012 [9] m.p.pechini, method of preparing lead and alkaline earth titanates and coating method using the same to form a capacitor, us patent no. 3.330.697, 1967. [10] a. ianculescu, z.v. mocanu, l.p. curecheriu, l. mitoseriu, l. padurariu, r. trusca, "dielectric and tunability properties of la-doped batio3 ceramics", journal of alloys and compounds, vol. 509, issue 41, pp. 10040–10049, 2011. [11] a.k.yadav, c.gautam, " dielectric behavior of perovskite glass ceramics", j. mater sci: materials in electronics, vol. 25, pp. 5165-5187, 2014. [12] a.k.yadav, c.gautam, "a review on crystallisation behaviour of perovskite glass ceramics", advances in applied ceramics, vol. 113 (4), pp.193-207, 2014. [13] e.j. lee, j. jeong, y.h. han, "defects and degradation of batio3 codoped with dy and mn", jpn. j. appl. phys. vol. 45, pp. 822-825, 2006. [14] s. m. park, y. h. han, "dielectric relaxation of oxygen vacancies in dy-doped batio3", journal of the korean physical society, vol. 57, no. 3 pp. 458463, 2010. [15] k.j. park, c.h. kim,y.j. yoon, s.m. song, "doping behaviors of dysprosium, yttrium and holmium in batio3 ceramics", j.e.ceram.soc., vol. 29, pp. 1735-1741, 2009. [16] s.m. bobade, d.d. gulwade, a.r. kulkarni, p.gopalan, "dielectric properties of aand b-site doped batio3 (i): laand al-doped solid solution", j. appl. phys., 97:074105, 2005. [17] d. gulwade, p. gopalan, "dielectric properties of aand b-site doped batio3: effect of la and ga", physica b, 404, pp.1799–805, 2009. [18] p.r. krishnamoorthy, p. ramaswamy, b.h. narayana, "cazro3 additives to enhance capacitance properties in batio3 ceramic capacitors", j. mater. sci. mater. electron., vol. 3, pp.176–180, 1992. [19] y. yuan, m. du, s. zhang, z. pei, "effects of binbo4 on the microstructure and dielectric properties of batio3 –based ceramics", j. mater. sci. mater. electron., vol. 20, pp.157–162, 2009. http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/article/pii/s0925838811016653 http://www.sciencedirect.com/science/journal/09258388 http://www.sciencedirect.com/science/journal/09258388/509/41 http://www.sciencedirect.com/science/journal/09258388/509/41 http://jjap.jsap.jp/cgi-bin/findarticle?journal=jjap&author=e%2ej%2elee http://jjap.jsap.jp/cgi-bin/findarticle?journal=jjap&author=j%2ejeong http://jjap.jsap.jp/cgi-bin/findarticle?journal=jjap&author=y%2eh%2ehan http://jjap.jsap.jp/archive/jjap-45.html 296 v. paunović, v. mitić, m. marjanović, lj. kocić [20] v. paunovic, l.j. zivkovic, v. mitic, "influence of rare-earth additives (la, sm and dy) on the microstructure and dielectric properties of doped batio3 ceramics", science of sintering, vol. 42, pp. 69–79, 2010. [21] w. li, z. xu, r. chu, p. fu, "structure and dielectric behavior of la-doped batio3 ceramics", adv. mater.res., vol. 105–106, pp. 252–254, 2010. [22] f.d. morrison, d.c. sinclair, a.r. west, "electrical and structural characteristics of lanthanum-doped barium titanate ceramics", j. appl. phys., vol 86, pp. 6355–6366, 1999. [23] r. zhang, j.f. li, d. viehland, "effect of aliovalent substituents on the ferroelectric properties of modified barium titanate ceramics: relaxor ferroelectric behavior", j.am.ceram.soc., vol.87, pp. 864-870, 2004. [24] f.d. morrison, a.m. coats, d.c.sinclair, a.r.west, "charge compensation mechanisms in la-doped batio3", j.europ.ceram.soc., vol. 6, no. 3, pp. 219-232, 2001. [25] f.d. morrison, d.c.sinclair, a.r.west, "doping mechanisms and electrical properties of la-doped batio3ceramics", int. j. inorg. mater., vol. 3, pp.1205–1210, 2001. [26] h. kishi, n. kohzu, y. iguchi, j. sugino, m. kato, h. ohasato, t. okuda, "occupation sites and dielectric properties of rare-earth and mn substituted batio3", j.europ.ceram.soc., vol. 21, pp. 1643-1647, 2001. [27] h. miao, m. dong, g.tan, y.pu, "doping effects of dy and mg on batio3 ceramics prepared by hydrothermal method", journal of electroceramics, vol. 16, pp. 297–300, 2006. [28] k.albertsen, d.hennings, o.steigelmann, "donor-acceptor charge complex formation in barium titanate ceramics: role of firing atmosphere", journal of electroceramics, 2:3, pp. 193-198, 1998. [29] k. uchino, s. namura, "critical exponents of the dielectric constants in diffuse-phase transition crystals", ferroelectrics letters, vol.44, pp. 55–61, 1982. facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. 93 106 doi: 10.2298/fuee1701093k comparison of measured performance and theoretical limits of gaas laser power converters under monochromatic light  rok kimovec, marko topič university of ljubljana, faculty of electrical engineering, ljubljana, slovenia abstract. evaluation of gaas laser power converters (lpc) is reported in light of theoretical maximum limits calculated with detailed balance method as proposed by shockley and queisser (sq). calculations were done for three different theoretical structures of lpcs homogeneously illuminated by monochromatic light. effects of lpc thickness, central wavelength of a monochromatic light source and various irradiance levels are discussed. reflection of incident light from the interface between air and gaas is calculated and countermeasures in the form of single and double layer anti reflection coatings are theoretically studied. measurements of single junction, single segment gaas lpc illuminated by monochromatic light with central wavelength λ0 = 808 nm are presented and compared with the theoretical maximum values. the conversion efficiency ηmeas = 54,4 % was measured for gaas lpc illuminated with power density of monochromatic light pillum = 14,3 w/cm2 at the temperature of the lpc casing t = 302 k. for the same parameters conversion efficiency ηsq = 76,6 % was calculated resulting in utilization ratio ηmeas/ηsq=0,71. measured jsc and voc achieve 88,5 % and 89,2 % of theoretically calculated sq limit values. key words: laser power converter, shockley-queisser limit, gaas, monochromatic efficiency 1. introduction shockley-queisser (sq) limit [1]–[3] is fundamental, widely adopted figure of merit used for evaluating efficiency limits of photovoltaic devices. it is based on detailed balance method and assumes radiative recombination as the sole loss mechanism in a solar cell. calculations of the sq limits were already done under standard solar spectra (am1.5, am1.0 and am0) or for black body radiation spectrum. for purposes of power beaming, where photovoltaic cell is illuminated by artificial light source in order to transfer energy with no electrically conductive path, sq limit under monochromatic illumination [4] will be calculated, since those systems commonly employ laser diodes as a source of monochromatic illumination. light energy irradiated from a laser diode is  received march 15, 2016; received in revised form june 13, 2016 corresponding author: rok kimovec university of ljubljana, faculty of electrical engineering, tržaška cesta 25, 1000 ljubljana, slovenia (e-mail: rok.kimovec@fe.uni-lj.si) 94 r. kimovec, m. topič converted to electrical energy by gaas laser power converters (lpc) optimized for monochromatic light sources at specific wavelength. in practice laser diodes with central wavelength between λ0 = 800 – 850 nm are often utilized, due to their low price and good system efficiency when employing gaas lpcs as optical energy to electrical energy converters. currently state-of-the-art gaas lpcs achieve efficiencies greater than 56 % [5-6] while illuminated with monochromatic light with central wavelength λ0 between 810 – 820 nm and pillum between 50-124 w/cm 2 . in this paper we present theoretically calculated efficiency limits based on detailed balance principle compared with measured gaas lpc. conversion of optical energy to electrical energy will be presented with loss analysis for both theoretical and measured lpc. 2. model sq current density limit is calculated as difference between photogenerated current density and loss of available current density due to radiative recombination as (1): . (1) jph – photogenerated current density q – elementary charge of electron rr – radiative recombination rate of electron-hole pairs (e – h) 2.1. photogenerated current density photogenerated current density is calculated from the flux of e – h pairs generated by absorbed photons (2). in this paper we present calculation of sq limit under monochromatic illumination applied for a gaas photovoltaic cell. (2) φe – h – flux of photogenerated e – h pairs φe – h presents number of generated e – h pairs in absorber per unit time per unit area and is calculated using absorption coefficient α0 of gaas as measured by [7] including urbach tail with slopes e0 below eg and e’ above eg [8] and fitted to the following equation (3) [9]: { ( ) (3) eph – energy of photons incident on lpc surface eg = 1.42 ev – band gap of gaas α0 = 8000 cm -1 e0 = 6,7 mev e’ = 140 mev comparison of measured performance and theoretical limits of gaas laser power converters 95 from known absorption rate α, absorptivity a for three different hypothetical structures of thickness l of gaas lpcs as seen in fig. 1 were considered as follows [3,4]: a) planar front surface with complete absorption on the back surface (4), representing a single pass of photons through absorber. ( ) ( ) (4) b) planar front surface with perfect reflecting mirror on the back surface (5), representing a double pass of photons through absorber. ( ) ( ) (5) c) random texture on front surface with perfect reflecting mirror on the back surface (6), representing multiple passes of photons through absorber. ( ) ( ) ( ) (6) ngaas – refractive index of gaas all considered structures have thickness dependence, noted with l and are assumed to be exposed in the air. for randomly textured dependence of absorptivity of gaas on refractive index ngaas of gaas can be also noted. fig. 1 different theoretical structures of gaas lpcs considered in calculations. arrows shows the light path through gaas absorber. r – reflection of light from bottom surface with known a, jphoto can be calculated from a flux of photons incident on an lpc front surface. reflection of incident light from the front surface is not taken into account here, but is added and discussed later. laser spectrum around central wavelength λ0 was interpolated with gaussian distribution as shown in the following equation (7). √ ( √ ) ( √ ) (7) 96 r. kimovec, m. topič laser spectrum was weighted with power density of incident light entering the front surface of lpc resulting in spectral irradiance (8), (10). (8) (9) ( ) (10) fwhm – full width at half maximum λ0 – central wavelength h – planck’s constant c – speed of light equation for a flux of photons (11) entering front surface per unit energy ( ) can be derived from known spectral irradiance. ( ) ( ) (11) integration of a multiplied by ( ) over energy content of photons presented in spectral irradiance results in a flux of e – h pairs (12) generated by a flux of photons for defined laser parameters λ0, fwhm and laser power density and lpc thickness l. ( ) ∫ ( ) ( ) (12) photo generated current density can be calculated from a known flux of e – h pair (13) as a function of incident photon energy and thickness of lpc. ( ) ( ) (13) 2.2. radiative recombination rate sq limit assumes radiative recombinations in thermal equilibrium as sole loss mechanism present in the photovoltaic cell [1]. according to the detailed balance method used in calculation of sq limit, all absorbed energy should be emitted for the system to be in equilibrium. therefore the loss of energy due to thermal radiation is unavoidable. derivation of rr can be found in literature [1] and recombination current density can be written as (14): ( ) (14) where: ( ) ∫ ( ) (15) comparison of measured performance and theoretical limits of gaas laser power converters 97 k – boltzmann’s constant h – planck’s constant v – voltage across device at open circuit condition t – device temperature it is remarked that rr in our case corresponds to an emission rate from the device surface (and not from the volume). consequently its unit is m -2 s -1 (instead of more commonly used m -3 s -1 ). 2.3. lpc model performance of the lpc is expressed with the same parameters as used in evaluation of solar cells. efficiency η, fill factor ff, open-circuit voltage voc, short-circuit current density jsc and available electrical power density at maximal power point pmax are derived from current density – voltage dependency, j – v (16). ( ) ( ) (16) max power density is calculated numerically as (17): ( ) ( ( ) ) (17) and vmpp and jmpp as (18): ( ) ( ) . (18) conversion efficiency is calculated as (19): ( ) ( ) (19) and fill factor as (20): ( ) ( ) ( ) ( ) . (20) jsc is obtained as (21): ( ) ( ) (21) and voc is calculated as (22): ( ) ( ) . (22) 3. simulation results all simulations of sq performance limit were done for three different theoretical lpc structures discussed above with lpc thickness l = 1 µm at lpc temperature t = 300 k. 98 r. kimovec, m. topič source of monochromatic illumination was assumed to be homogenous across the lpc front surface with illumination power density pillum = 100 mw/cm 2 , spectral distribution around a central wavelength λ0 = 808 nm is gaussian with fwhm = 5 nm. simulation parameters different from those specified in previous statement are noted where necessary. 3.1. effect of lpc absorber thickness on efficiency as seen in fig. 2 absorber layer thickness plays a significant role on sq efficiency limit for structures with thickness less than 3 µm. for thicker cells, there is less than 1 % difference between the best and worst performing structure and efficiency saturates at η = 68,4 % for all structures and for given simulation parameters. fig. 2 absorber thickness effect on efficiency of lpc similar strong rise with increasing thickness of absorber can be seen for jmpp while values of vmpp slightly fall (fig. 3). thickness is important to guarantee complete absorption of all photons which results in increased jmpp. this is most notable in structure with no reflection from the back surface where only single pass of light through absorber occurs. recombination fig. 3 absorber thickness effect on jmpp and vmpp of lpc comparison of measured performance and theoretical limits of gaas laser power converters 99 rate of e – h pairs increases with increasing thickness, resulting in increased jrad and decreased vmpp. product of jmpp and vmpp is rising with a thickness of absorber resulting in increasing pmpp and efficiency, since the gain from increased absorption is much larger than loss of voltage due to increased recombination rate of e – h pairs. 3.1. effect of central wavelength of monochromatic light on efficiency of lpc sq efficiency for three different 1 µm thick gaas theoretical structures of lpcs as a function of monochromatic light with central wavelength λ0 are shown in fig. 4. maximal efficiency of ηsq = 72,3 % is achieved for the randomly textured lpc with perfect back mirror at λ0 = 872 nm which correlates to eg=1,42 ev of gaas. lpc with planar front surface and perfect back mirror achieves ηsq = 65,0 % at λ0 = 808 nm and planar lpc with an absorbing mirror on the back has ηsq = 56,7 % at λ0 = 728 nm. it is clear that a lpc structure does not only influence absolute maximum of efficiency, but also shifts peak of efficiency, marked with x in fig. 4. commercially available lasers diodes with optimal performance between price and output optical power suitable for illumination of gaas lpcs emit light with a spectral peak at approximately λ0 = 808 nm marked with a vertical line in fig. 4 fig. 4 effect of central wavelength λ0 of monochromatic source on sq efficiency limit 3.2. performance of lpc under high irradiance lpcs are normally illuminated with high irradiance of monochromatic light, since efficiency increases with increasing illumination power density pillum, calculated as . all three structures have logarithmic dependence of efficiency on pillum as shown in semi-log plot in fig. 5. for comparison efficiency of high efficiency gaas lpcs are plotted in fig. 5. highest lpc efficiency known to the authors was achieved by helmers et al. with η = 57,4 % at λ0 = 805 nm and pillum = 124 w/cm 2 [6]. gaas lpc with similar efficiency η = 56,0 % at λ0 = 820 nm and pillum = 56 w/cm 2 was reported by andreev et al.[5]. efficiency η = 52,8 % at λ0 = 810 nm and pillum = 14 w/cm 2 was reported by beaumont et al.[10]. peña et al. developed lpc with efficiency η = 45,4 % at λ0 = 808 nm and pillum = 5 w/cm 2 [11]. for same illumination parameters shan et al. report efficiency η = 53,2 % [12]. reported high efficiency lpcs are marked with circles in fig. 5. 100 r. kimovec, m. topič fig. 5 influence of high irradiance on efficiency of lpcs. efficiencies of state-of-the-art gaas lpcs obtained from the literature are marked with circles. 3.3. single and double layer ar coating for reduced front surface reflection so far in the paper no reflection of incident light from front surface was assumed in calculations, resulting in all light reaching absorption layer. in the real world reflection from interface between two media results in decrease of light coupled in photovoltaic structure. reflection of light perpendicular to the surface is defined with refractive indices of media on the interface (23). in our case interface consists of air and gaas. since refractive index of gaas ngaas is dependent on photon energy [13], reflection r exhibits same dependence. for photon energy eph = 1,6 ev, representing monochromatic light with λ0 = 808 nm, ngaas=3,7 [13]. refractive index of air is nair = 1,0 and is constant through broad range of light spectrum [14]. ( ) (23) large difference of refractive indices between gaas and air leads to high reflection of light from the interface and only 67,2 % of perpendicularly incident monochromatic light at λ0=808 nm is coupled in the absorption region of gaas. numerous schemes are deployed in order to reduce reflection depending on the spectrum of incident light. for broadband white light random texturing of front surface reduce reflectivity of broad wavelength range to few percent [15]. another approach employed when using monochromatic light is to use thin film single layer antireflection ar coating with refractive index nar (24) and with quarter wavelength thickness dar (25) of incident light. √ (24) (25) when using monochromatic light single layer thin film ar coating may totally reduce reflection as seen in fig. 6 while for broad white light spectrum single layer of ar coating reduce reflectance to around 10 % [16]. comparison of measured performance and theoretical limits of gaas laser power converters 101 reflectance r for perpendicularly incident light as a function of thickness dar and energy of photon eph for single layer ar coating can be written as [17] (27): ( ) (26) ( ) ( ) ( ( )) ( ( ) ( )) ( ) ( ( )) ( ( ) ( )) (27) λ0 – wavelength of monochromatic light in air ( ) ( ) for monochromatic light with central wavelength λ0=808 nm, 105,5 nm thick single layer ar coating with refractive index nar=1,92 reduce reflectance to zero as seen in fig. 6, resulting in all incident light coupled in absorption layer. since material with exact same refractive index at specified wavelength doesn’t exist, it is informative to calculate reflection from front surface when using already deployed materials of ar coatings. fig. 6 shows reflections for three different materials of ar coating deployed on gaas as a function of their thickness. the best material regarding refractive index for ar coating on gaas is silicon nitride (si3n4) with refractive index 2,00 at 808 nm [18]. gaas with 101 nm thick layer of si3n4 reflect around 0,1 % of incident light. another appropriate material for ar coating of gaas is al2o3 or alumina. al2o3/gaas interface is widely studied [19], [20] since it has many uses in semiconductor industry such as insulator layer in igfet transistors [21], diode laser coatings [22] and ar coating for high efficiency solar cells [23]. 114,8 nm thick layer of alumina on gaas with refractive index nal203=1,76 [24] at 808 nm resulting in front surface reflection under 1 %. another commonly used material for ar coating on solar cells is sio2 or silica with refractive index nsio2=1,45 at 808 nm [25]. since the refractive index of silica is far from optimal for ar coating on gaas around 7,4 % of incident light is reflected in the best case scenario. fig. 6 influence of single layer ar coating on reflection from interface gaas/air 102 r. kimovec, m. topič single layer ar coating provides sufficient reduction of reflection for monochromatic light from the interface gaas/air, but put strict requirements on ar coating material, since it requires exactly specified refractive index in order to achieve good results. it also performs well only for designed wavelength so performance of single layer ar coating is decreased in real world scenario where wavelength of diode laser varies due to manufacturing tolerances and temperature of operation. to overcome this limits, double layer ar coating can be deployed. for quarter wavelength thicknesses of both ar coatings in double layer ar stack, for perpendicularly incident light r is defined as [17] (28): ( ( ) ( ) ( ) ( ) ( ) ( ) ) (28) r will be minimized when (29): √ (29) nar1, nar2 – refractive index of thin layer one and two of double layer ar coating to minimize reflection from interface air/gaas when using monochromatic light with λ0 = 808 ratio of nar2/nar1 = 1,92 should be utilized. well suited materials for ar coatings that approach this ratio are mgf2 and tio2. refractive indices of those two materials at 808 nm are ntio2 = 2,52 [24] and nmgf2 = 1,37 [26] resulting in ratio of nar2/nar1 = 1,84. fig. 7 shows reflection of double stack ar coating deployed on gaas as function of thickness of mgf2 and tio2. reflection is reduced to zero with thickness of dmgf2 = 72,2 nm and thickness of dtio2 = 58,1 nm. fig. 7 influence of double layer ar mgf2/tio2 coating on reflection from interface gaas/air comparison of measured performance and theoretical limits of gaas laser power converters 103 4. comparison of sq efficiency limit with measured lpc efficiency following theoretical calculations, measurements were done on gaas lpc pictured in fig. 8. a single segment single junction circular gaas lpc with radius 0,15 cm was fully illuminated with monochromatic light from semiconductor laser with λ0 = 808 nm and total output power 1,06 w. light from a laser diode is coupled into mm 105/125 µm, na 0,22 fiber with output positioned perpendicular to the surface of the lpc so that whole area is illuminated and spillage of light is minimized. impinging profile of incident light is near gaussian resulting in uniform irradiance of front surface. area of illumination was 0,074 cm 2 resulting in pillum = 14,3 w/cm 2 . lpc was mounted on to-39 casing that was socketed and mounted on heatsink for efficient heat dissipation. i v curve of illuminated lpc was measured with keithley 2602a. scan through whole i v curve was done in under one second in order to minimize heating of the lpc. measured temperature of the to-39 casing was 302 k. measurement results compared with theoretical sq limits for the same parameters can be seen in table 1. fig. 8 picture of measured gaas lpc mounted on to-39 casing. table 1 measurement and simulated results for lpc under monochromatic illumination for pillum = 14,3 w/cm 2 gaas lpc measured gaas lpc sq ratio [%] η [%] 54,4 76,6 71,0 ff [%] 82,3 90,3 91,1 voc [v] 1,16 1,30 89,2 jsc [a/cm 2 ] 8,24 9,31 88,5 vmpp [v] 1,00 1,20 83,3 jmpp [a/cm 2 ] 7,78 9,12 85,3 pmax [w/cm 2 ] 7,78 10,96 71,0 measured i v curve normalized to calculated sq limit values of jsc_sq and voc_sq [27] for the same parameters can be seen in fig. 9. while jsc and voc of fabricated lpc achieve around 90 % of the theoretical value, pmax at 71 % of theoretical limit still needs to be optimized. reason for low measured pmax in power lost on series resistance rs, which is beside grid shading dominant loss mechanism in manufactured single junction, single segment lpcs as discussed in [28]. 104 r. kimovec, m. topič fig. 9 measured and simulated i v curve of gaas lpc normalized to values of voc_sq and jsc_sq. measurements and calculations were done under monochromatic illumination λ0=808 nm for pillum = 14,3 w/cm 2 5. distribution of losses in lpc following the sq limit we can divide energy conversion from light to electrical energy in lpc in groups. loss analysis for randomly textured l = 1 µm thick lpc with perfect mirror on the back as best case theoretical structure at λ0 = 808 nm, pillum = 14,3 w/cm 2 and fwhm = 5 nm at t = 302 k is shown in fig. 8 in inner section of pie chart. 76,6 % of light energy is converted to useful electrical energy. 13,9 % of the light energy cannot be converted to electrical energy due to lower voltage at maximal power point vmpp than voltage of bandgap, vg. radiative recombinations of e – h pairs contribute to 2,0 % of energy emitted from lpc and 7,5 % is transformed to heat due to the thermal relaxation of photons with energy higher than bandgap. thermal losses could be minimized if monochromatic light source with central wavelength at peak efficiency as seen in fig. 4 would be used. outer section of pie chart in fig. 10 shows measured energy distribution in lpc. rs contribute to significant drop of vmpp resulting in increased loss of useful energy due to vmpp < vg. another 13,3 % of energy is a sum of other electronic and optical losses. fig. 10 distribution of energy conversion in lpc @ pillum = 14.3 w/cm 2 at λ0 = 808 nm and t = 302 k. inner section of pie chart presents energy conversion following sq limit, while outer section presents measured lpc. comparison of measured performance and theoretical limits of gaas laser power converters 105 6. conclusion calculation of sq limits for lpc under monochromatic illumination is a method for evaluation of theoretically achievable limits of lpcs and comparing them to measured results of manufactured devices. we provided insights how lpc design can be further optimized together with appropriate light source in order to achieve high system efficiency. irradiance should be high leading to small surfaces of lpcs and 80 % efficiency could be theoretically achieved for pillum = 100 w/cm 2 . comparison between calculated and measured values shows us that we can already achieve 90 % of theoretical values for jsc and voc while measured pmax achieve 71 % of theoretical limit calculated with sq method. further work should be done to include effect of series resistance in the calculations, since it is a major loss mechanism in single junction single segment lpcs. acknowledgement: the authors acknowledge andreas w. bett and henning helmers from fraunhofer ise for valuable discussion and providing us samples of lpcs. the authors acknowledge the financial support from the slovenian research agency (program p2-0197). r. kimovec thanks the slovenian research agency for his phd funding. references [1] w. shockley and h. j. queisser, "detailed balance limit of efficiency of p‐n junction solar cells," j. appl. phys., vol. 32, no. 3, pp. 510–519, mar. 1961. [2] m. jošt and m. topič, "efficiency limits in photovoltaics: case of single junction solar cells," facta univeristatis, series: electronics and energetics, vol. 27, no. 4, pp. 631–638, 2014. [3] a. w. b. gergö létay, "etaopt – a program for calculating limiting efficiency and optimum bandgap structure for multi-bandgap solar cells and tpv cells," in proc. of the 17th european photovoltaic solar energy conference, munich, germany, 2001, pp. 178–81. [4] a. w. bett, f. dimroth, r. lockenhoff, e. oliva, and j. schubert, "iii-v solar cells under monochromatic illumination," in proc. of the 33rd ieee photovoltaic specialists conference, 2008, pp. 362–366. [5] v. andreev, v. khvostikov, v. kalinovsky, v. lantratov, v. grilikhes, v. rumyantsev, m. shvarts, v. fokanov, and a. pavlov, "high current density gaas and gasb photovoltaic cells for laser power beaming," in proceedings of the 3rd world conference on photovoltaic energy conversion, 2003, vol. 1, pp. 761–764. [6] h. helmers, l. wagner, c. e. garza, and et al, "photovoltaic cells with increased voltage output for optical power supply of sensor electronics," in proceedings of the ama conferences 2015, 2015, pp. 519–524. [7] m. d. sturge, "optical absorption of gallium arsenide between 0.6 and 2.75 ev," phys. rev., vol. 127, no. 3, pp. 768–773, aug. 1962. [8] f. urbach, "the long-wavelength edge of photographic sensitivity and of the electronic absorption of solids," phys. rev., vol. 92, no. 5, pp. 1324–1324, dec. 1953. [9] o. d. miller, e. yablonovitch, and s. r. kurtz, "intense internal and external fluorescence as solar cells approach the shockley-queisser efficiency limit," arxiv prepr. arxiv11061603, 2011. [10] b. beaumont, j. c. guillaume, m. f. vilela, a. saletes, and c. verie, "high efficiency conversion of laser energy and its application to optical power transmission," in proc. of the record of the twenty second ieee photovoltaic specialists conference, 1991, pp. 1503–1507 vol.2. [11] r. pena, c. algora, and i. anton, "gaas multiple photovoltaic converters with an efficiency of 45% for monochromatic illumination," in proceedings of the 3rd world conference on photovoltaic energy conversion, 2003, vol. 1, pp. 228–231 vol.1. [12] t. shan and x. qi, "design and optimization of gaas photovoltaic converter for laser power beaming," infrared phys. technol., vol. 71, pp. 144–150, jul. 2015. [13] d. e. aspnes, s. m. kelso, r. a. logan, and r. bhat, "optical properties of alxga1−x as," j. appl. phys., vol. 60, no. 2, pp. 754–767, jul. 1986. 106 r. kimovec, m. topič [14] p. e. ciddor, "refractive index of air: new equations for the visible and near infrared," appl. opt., vol. 35, no. 9, pp. 1566–1573, mar. 1996. [15] m.-j. huang, c.-r. yang, y.-c. chiou, and r.-t. lee, "fabrication of nanoporous antireflection surfaces on silicon," sol. energy mater. sol. cells, vol. 92, no. 11, pp. 1352–1357, nov. 2008. [16] d. bouhafs, a. moussi, a. chikouche, and j. m. ruiz, "design and simulation of antireflection coating systems for optoelectronic devices: application to silicon solar cells," sol. energy mater. sol. cells, vol. 52, no. 1–2, pp. 79–93, mar. 1998. [17] d. a. steck, classical and modern optics, 1.5.1 ed. 2013. [18] h. r. philipp, "optical properties of silicon nitride," j. electrochem. soc., vol. 120, no. 2, pp. 295–300, feb. 1973. [19] l. hong-liang, l. yan-bo, x. min, d. shi-jin, s. liang, z. wei, and w. li-kang, "characterization of al2o3 thin films on gaas substrate grown by atomic layer deposition," chin. phys. lett., vol. 23, no. 7, p. 1929, 2006. [20] r. e. sah, c. tegenkamp, m. baeumler, f. bernhardt, r. driad, m. mikulla, and o. ambacher, "characterization of al2o3/gaas interfaces and thin films prepared by atomic layer deposition," j. vac. sci. technol. b, vol. 31, no. 4, p. 04d111, jul. 2013. [21] w. s. lee and j. g. swanson, "switching behaviour of al2o3-n gaas misfets," electron. lett., vol. 18, no. 24, pp. 1049–1051, nov. 1982. [22] p. v. bhore, a. p. shah, m. r. gokhale, s. ghosh, a. bhattacharya, and b. m. arora, "effect of facet coatings on laser diode characteristics," indian j eng mater sci, vol. 11, pp. 438–440, 2004. [23] s. abdul hadi, t. milakovich, m. t. bulsara, s. saylan, m. s. dahlem, e. a. fitzgerald, and a. nayfeh, "design optimization of single-layer antireflective coating for gaas p /si tandem cells with , 0.17, 0.29, and 0.37," ieee j. photovolt., vol. 5, no. 1, pp. 425–431, jan. 2015. [24] j. r. devore, "refractive indices of rutile and sphalerite," j. opt. soc. am., vol. 41, no. 6, pp. 416–417, jun. 1951. [25] i. h. malitson, "interspecimen comparison of the refractive index of fused silica," j. opt. soc. am., vol. 55, no. 10, pp. 1205–1208, oct. 1965. [26] h. h. li, "refractive index of alkaline earth halides and its wavelength and temperature derivatives," j. phys. chem. ref. data, vol. 9, no. 1, pp. 161–290, jan. 1980. [27] r. m. geisthardt, m. topic, and j. r. sites, "status and potential of cdte solar-cell efficiency," ieee j. photovolt., vol. 5, no. 4, pp. 1217–1221, jul. 2015. [28] e. oliva, f. dimroth, and a. w. bett, "gaas converters for high power densities of laser illumination," prog. photovolt. res. appl., vol. 16, no. 4, pp. 289–295, jun. 2008. facta universitatis series: electronics and energetics vol. 29, no 3, september 2016, pp. 419 435 doi: 10.2298/fuee1603419m using internet of things in monitoring and management of dams in serbia rastko martać 1 , nikola milivojević 1 , vladimir milivojević 1 , vukašin ćirović 1 , dušan barać 2 1 institute for the development of water resources “jaroslav ĉerni”, serbia 2 faculty of organizational sciences, university of belgrade, serbia abstract. this paper discusses harnessing internet of things in monitoring and managing dams in republic of serbia. large dams are of major importance, primarily because of their use for electricity, but risks which are associated with it should be greatly taken into account. there is a need to consolidate information related to dam facilities in order to use them for dam management in the republic of serbia. an information system has been developed based on the existing systems, allowing utilization of intelligent network sensors. the aim of the paper is to describe possibilities of the internet of things application within a specific system for dam safety management. in order to facilitate the inclusion of a large number of intelligent sensors, a new data acquisition module for communication with sensors in the monitoring network is defined. the system should provide on time alerting in case security parameters deviate from the expected values. key words: internet of things, cloud, dams, dam safety management, monitoring, serbia 1. introduction most of the dams in serbia were built in the sixties and seventies of 20 th century. the risk for security increases with the age of the building, which is why management and security of the facility has to be improved in order to timely consider possible negative situations [1]. it should be noted that these facilities are of vital importance for society, because they are used to produce electricity and water supply. dams also provide water supply to cities, flood control, and can assist river navigation. many dams are multipurpose, providing more than one of the above benefits. their damage or possible demolition can cause serious consequences to the environment. in order to provide support for the management of complex systems of hydro power plants, it is necessary to establish communication between metering systems and computer models. the complexity of the management of water resources is due to the conflicting demands of different users (hydropower, agriculture, etc.) for limited resources, and this received july 10, 2015; received in revised form november 13, 2015 corresponding author: rastko martać institute for the development of water resources “jaroslav ĉerni”, jaroslava ĉernog 80, belgrade, serbia (e-mail: mrastko@gmail.com) 420 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać complexity increases in extreme weather conditions, such as droughts and floods, which are reflected in populated areas. dam safety management is a long-term and continuous process that has to be improved permanently [2] [3] [4]. in this respect, procedures and processes of dam safety management must continually be improved in all aspects, both in terms of measuring equipment, as well as in the management and use of data in the procedures for determining safety facilities. a modern system for dam safety management should be established, so that it primarily provides operational status of monitoring dam safety in real time and to enable operational conclusion on the status of the dam safety practically on a daily basis. the whole concept of technical monitoring, with a posteriori reasoning after a few months, or even more than a year, loses much of its meaning and importance (the past practice was based on the preparation of periodic reports on the behavior of the dam). the modern concept of dam safety management should be based on the physically based and software-supported technical system [5] [6]. the physical foundation of this concept relates to the provision of data of importance to the safety of the dam and the accurate measurement of relevant physical quantities, which are to be tracked on the dam with installed equipment for technical monitoring. today's level of information and telecommunication infrastructure enables implementation of the advanced systems for measuring, acquisition and archiving data. these systems should be able to automatically collect monitoring data, to perform data validation and to securely archive them as to provide users with data in unified and efficient manner. with long-term monitoring of the instruments operation, database obtained by reliable instruments could be formed. implementation and use of iot on dams enables creation of databases of reliable instruments which can give more precise evaluation of the dam safety. internet of things (iot) is a network of physical objects in which electronics are incorporated, as well as software and sensors that allow users to obtain timely and accurate data through services for data exchange between manufacturers, users or other connected devices [7]. reliable data could enable users to react in the right way at the right time, in case of critical situations or natural disasters and in some cases to predict events. the aim of paper is to describe possibilities of the internet of things application within a specific system for dam safety management. the idea is to improve the system of data collection with the implementation of cloud and wsn. all data processing would be moved to cloud to free up computer resources. wsn would provide more reliable data. 2. literature review 2.1. dam safety management observing the safety of dams is one of important measures to ensure the safety of the dam [8]. this is an important and indispensable activity in the work and management of the dam. computer software plays a vital role in monitoring the safety of dams. many dam owners have developed information systems for the dam safety management supervision to facilitate management and analysis of data. fujian electric power company in east china has 27 different types of dam: concrete, earth, arch and embankment dams. all these dams are deployed in remote rural areas, making it difficult to manage security information for all dams. it is therefore important to develop an information system for remote control of the monitoring system, to collect and to transfer dam safety monitoring data so that all this using internet of things in monitoring and management of dams in serbia 421 information can be processed, analyzed and evaluated to effectively adopt the decision on the status of the dam safety. fortunately, such a remote information system was successfully developed jointly by all the participants in the business. it was applied to a group of dams of fujian electric power company, where the staff can use the system for analysis and evaluation of data observations. lately, it is possible to see an increase in damages and failures on the dams due to aging, earthquakes and unusual changes in climate [9]. for these reasons, the safety of the dams is gaining in importance every day in terms of disaster management at the national level. in the world there are numerous organizations that are responsible for the dam safety, and some of them are: the international commission on large dams (icold), committee on dam safety and dam security (codss), association of state dam safety officials (asdso), the interagency committee on dam safety (icods), the national dam safety review board (ndsrb) and dam safety interest group (dsig). kwater (korea water resource corporation) which currently runs and manages 30 large dams developed a system for dam safety (kdsms). this system is used in a consistent and efficient management of dam safety. kdsms consists of data for a dam and reservoir, hydrological information system, management system for the area of control and data, system of instruments and observations including the monitoring of earthquakes, a system for improving research and security and information system of corporation. for effective control of dam life cycle, it is very important to implement the diagnosis in real time and a reasonable estimate of dam safety based on the prototype observation [10]. the development of iewsds (intelligent early-warning systems of dam safety) is an important approach for the realization of this goal. huai-zhi su et al. observed the dam as a vital and intelligent system and constructed a bionic model of safe dams, which consists of a system of observations (nerve), central processing units (big brain), and tools for decision-making (the body). with the above-described model and system engineering, the authors have designed iewsds. intelligent machine that performs reasoning is the central processing unit of the system iewsds, it performs data analysis, and applies the algorithm of diagnosis and assessment of the safety of dams. because of the persistent non-linear and dynamic characteristics, the system has adopted a combined model based on a wavy network to exert approximation and prediction of behavior of the dam. the security status of the dam is changing dynamically, requiring qualitative and quantitative change in behavior. huai-zhi su et al. in the paper propose an expanded method of assessment [10]. the application shows that the bionic model is possible and suggests key technology operation. systems can provide technical support to improve dam safety management, prolonging the life of dams and avoiding accidents. disposal of tailings is of great importance for mining, because the processing of ores produces a large amount of tailings [11]. in the past few years there have been a catastrophic accident at the tailings dam and tailings mines, which have caused enormous damage and great human losses. to improve security of tailings dams, the control and pre-alarm system tdmpas (the tailings dam monitoring and pre-alarm system) is introduced for monitoring tailings dams, which are based on the use of iot and the cloud with the ability to monitor line saturation, the water level and the deformation of the dam in real time. tdmpas helped engineers in the mines to monitor the dam 24/7 and automatically receive pre-alarm information from remote locations in any weather conditions. tdmpas was applied at several mines and showed that the application in the monitoring of the physical condition of the tailings dam was justified. 422 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać 2.2. the application of iot numerous works related to iot application in system for observing have been published. for instance in the [12] authors deal with the localization system, based on zigbee technology in real-time in order to provide prompt support for safe management of the dam construction sites. the system is based on the tracking technology using wireless sensors and a set of servers that run software for processing the collected data, visually monitoring the condition of the site in real-time and remote communication with other systems such as erp, crm. a low-power tracking technology is network hardware based on zigbee technology, which uses the technology of fingerprinting software. the proposed system for observing in real time for employees was successfully implemented in the xiluodu arch dam construction site. implementation and development of the internet of things (iot) is closely connected with the construction of smart grids [13]. generally, using the technology of wireless communications and observations all electrical devices can be connected in iot, in order to make the smart grid become interactive electricity network in real time. qiaoming zou et al. summarize the current state in that area, analyze the current structure and characteristics, as well as key technologies that enable the implementation of the iot. authors brought up some concrete analysis and discussion on the implementation of iot in asset management and in the automatic reading meter system of smart grid and gave conclusions about the perspective of the application of iot in smart grids. operating state tailings ponds, which are an important production area in the mine, directly affect the safety of people and property, as well as production at the mine [14]. to build a system for the security surveillance of tailings ponds, using gis technology we cannot only manage the data and information of tailings scientifically and effectively, but also give full play to the advantage of computer's storage of massive data. the interactive operation of gis spatial query and analysis facilitates accurate and convenient search management, alteration and statistics of data. with the observation of the height of the seepage line of dam body, the water level in the tank, the index of dry coast, deformation and deviation of the dam body, we can promptly obtain information such as the fluctuation of the water level, which is important for timely forecasting stability of the dam body, thus achieving safe management of tailings ponds, as well as early warning of danger. lately, much attention has been paid to climate changes, control and management of the environment, so iis (integrated information system) is gaining on importance. the paper described in [15] presents a new iis that combines iot, cloud computing, geo-informatics (remote sensing rs, geographic information system gis, global positioning system gps) and e-science for monitoring and management of living environment, with a case study of regional climate change and environmental impact. in order to collect data and other information to a perception layer, multiple sensors and web services have been utilized. both networks, private and public, were used to access and transport mass data and other information in the network layer. the result of this case study shows that there is a visible trend of the increase in air temperature in xinjiang in the past 55 years and an apparently growing trend in rainfall since the early 1980s [15]. besides the correlation between environmental indicators and meteorological elements, the availability of water resources is a decisive factor in the terrestrial ecosystem in the area. the study shows that the iis greatly contributed to the study, not only in terms of data collection using iot, but also in the use of web services and applications that are based on the cloud (cloud) platform and e-science, and that effective evaluation and monitoring can still be improved. using internet of things in monitoring and management of dams in serbia 423 3. management and monitoring of large dam safety in [16] and [17], authors describe the current state of dams in the republic of serbia. over time, the sensors cease to operate or provide inaccurate values, so it is necessary to replace or implement new modern sensors. although the system of maintenance of dams in serbia is not up-to-date and fully equipped on all dams, dams have not had a harder disasters or major problems which is primarily, due to the good design and high quality of the works during their construction. however, despite the fact that so far there has not been any greater damage on the individual objects, which could have jeopardized their security and stability, or reduced their functionality, we must keep in mind that especially with aging dams, we can expect emergence of various problems which have already been testified by some peculiar features, which will be described later. most dams have technical monitoring systems that are essential from the point of monitoring and control the state of the facilities. these systems generally date from the time of building the facilities, and in the meantime have not been significantly renewed nor have they been further developed. often, those systems are technologically outdated, so failure of old instruments and missing of the data needed for monitoring dam safety is not uncommon. the system monitoring of the dam becomes incomplete as per the type and frequency of monitoring. in the last few years, the reconstruction process of system for monitoring (djerdap 1 [16], gruza [17]) has started. in the forthcoming period it is obvious that significant activities will happen with regard to these issues. it is necessary to establish a modern, functional and optimized system for technical monitoring of most of the remaining dams, in the form of automatic telemetry system for acquisition, which should allow continuous automatic measurement and recording of measurement data in a given time interval. in the future, increasing the fund of collected data will create conditions for a more detailed analysis of the condition and behavior of the facilities during operation, which is an integral part of the concept of dam safety management and would enable a precise definition of the trend behavior of the dam and should provide an opportunity for early detection of possible anomalies in the condition of the dam. this could be an example of a dam on which there have been good initial assumptions for the development and application of modern control system of dam safety. on many dams in serbia, the state of monitoring system can be assessed as partially satisfactory. this means that based on all available results of observations it is possible to make assessment of the condition of the facilities, but it is necessary to take steps to improve the situation of monitoring. the implementation of a new, up-to-date system of monitoring can provide more accurate assessment of the state of the system. in recent years, steps have been taken to improve the system of technical surveillance by implementing advanced information technologies and a software system for managing the security of the dam. because the first system is a prerequisite for the latter, phase development in the area of dam safety in serbia should be expected. this complete system is applied on the rock fill dam prvonek, near vranje, while the realization of systems for high gravity concrete dam "djerdap 1" and "djerdap 2" is in progress. advanced system for technical measurement usually consists of following mechanisms: automatic acquisition, validation, archiving and access to all relevant data obtained in the system of technical surveillance. the core of this system is an information system for 424 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać technical measurement, whose purpose is to be technical support in the collection, management and processing of measurement data. the aim is to allow merging diverse data in one place from the entire system of technical monitoring, having a score of reliability, as well as access to all data to be simple, interactive and fast. establishing a system for dam safety management implies the existence of an advanced system of technical monitoring, and thus the information system of technical surveillance. relying on advanced system of technical surveillance as a source of reliable data, it is possible to develop a set of statistical and mathematical models based on physics, as well as following mathematical apparatus for monitoring the state and analysis of dam safety. this established system of dam safety management is used for:  tracking and monitoring the behavior, which consists of continuous monitoring, measurement and determination of compliance measured values and their expected values,  checking of the dam safety, which may be initial, periodic and extraordinary, and refers to determining the condition of the facilities and determining the degree of the facilities safety. the activity of monitoring and tracking behavior relies on established statistical models based on measured inputs that can provide the expected value of a variable. if the measured value deviate within permissible limits which are expected, it can be concluded that the system has no major changes. in the modern automated system, this process is daily and has an alarming role in the case that on the basis of measurements concluded that the facility does not behave as expected. this alarm is a signal that a special security check should be performed. checking the safety of dams is carried out to determine the condition of the facility and degree of the safety, by checking the facility behavior in a series of scenarios, respectively situations that are valid from the standpoint of dam safety. this check is done periodically after the expiry of a defined period or extraordinary, because the system of technical surveillance and the use of statistical models have shown that facility is behaving differently than it is expected. given that in the analysis of state of complex real objects, it is not possible to a priori completely define in homogeneity and the actual characteristics of the material, and on the other side having a large number of measuring different indicators of the state of the facility, for determining the current state of all parameters, it is necessary to establish assimilation mechanisms of real measurements. practically, based on the measurements of relevant physical quantities, calibration of physical parameters of the system is performed (such as: e.g. elastic modules, filtration coefficient, etc.), so the calculated quantities can be more appropriate to the measured ones. in this way, identification can be performed in the zone where changes have occurred. only over the updated model is it possible to carry out safety analysis and based on the analyses it can be decided which measures must be undertaken to improve the safety of the dam. dam safety management is reflected in the use of systems to support dam safety management, and it continues through the entire life cycle of the dam. 3.1. software system to support the dam safety management software system to support the dam safety management, shown in [18], was realized on the principles of service-oriented architecture (soa), which enables not only the use of data in real-time, but also the expandability and interconnection with other information using internet of things in monitoring and management of dams in serbia 425 systems. to create this system, commercially available technologies such as sql server databases, .net framework, ado.net to connect to databases and web services were used. the system architecture is shown in the following figure. fig. 1 the structure of the software system for managing dam safety (adopted from [19]) software system consists of the following components:  interface with the system to technical monitoring  number of modules for statistical analysis  numeric module for the simulation of surface leakage  numeric module for stress-strain analysis  numeric module for data assimilation applications that are an integral part of the solution allow users to see current measurements (measurements in real time) as well as the estimation of the state of the dam at the time. for details see [19]. 426 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać 4. the acquisition module for communication with sensors in the monitoring network dams have a lot of different instruments, such as rain gauges, water level gauges, flow meter, precipitation meter, etc. in order to improve the observation of dams it is necessary to bring these instruments into a single network and allow them to communicate with each other. due to the large number of different instruments, it is essential to enable communication between devices. this can be achieved with the help of sensorml and wireless sensor networks (wsns). 4.1. sensor model language the goal is to make all types of devices discoverable and accessible using standard web services and schemas [20]. standard xml encoding scheme can be used for metadata describing sensors, sensor platforms, sensor tasking interfaces, and sensor-derived data, if connections can be layered with web and internet protocols. sensor can enable direct communications by publishing xml descriptions of its control interface, so it is possible to receive real-time or stored monitoring data, determine the sensor's location, identify the characteristics of its monitoring capabilities, and even request specific monitoring tasks. sensor web enablement (swe) standards are open standards based on open and universally accepted standards for the internet and web, and for spatial location and they are foundational standards for communicating with sensors, actuators and processors whose location matters [21]. they are a key enabler for the internet of things. the sensor model language (sensorml) 2.0 provides a standard encoding and supports the internet of things (iot) and web of things (wot) by providing the ability to describe a sensor (or other online processing component) and to provide a link to the realtime values coming from this component [20]. the sensorml is a head component that provides sensor information necessary for discovery, processing, and geo-registration of sensor monitoring. an example on the web page http://www.sensorml.com/sensorml-2.0/examples/iot simple.html describes a sensor with a simple data stream consisting of temperature. it is combination of simple sensor and iot. the data themselves can be accessed through the url [22]. accessing this url would return either the latest value(s) or open up an html stream of real-time values. the proposal of authors of this paper is to use a web service that will access to sensor's data via the above mentioned url. in addition for obtaining real data, the role of the web service is also transmission and storage of real data in the central database. the end user calls the web service via the software that is described in the previous chapter. the web service can be used for all types of sensors. 4.2. wireless sensor network the constant evolution of technologies, low cost technologies with embedded wireless transmitter, low-power and powerful chipset led to the massive use and development of wireless sensors networks (wsns). wsn can scale from tens to hundreds of nodes and seamlessly integrate with existing wired measurement and control systems [15]. the network cluster architecture, which takes advantage of multi-hop and clustering, is adopted to lower the energy consumption. a wireless sensor network consists of a number of smart nodes, gateways or sink nodes and a computer management center [23]. using internet of things in monitoring and management of dams in serbia 427 sensor’s data are shared among smart nodes and sent to distributed or centralized system for analytics, which can be on cloud or in local [24]. wdsn (wsn applied on dams) is a self-organized wireless network with dynamic topology structures, which consists of sensor nodes and gateway nodes. the sensor nodes collect the dam data about water level, shift, stress and leakage, temperature, rainfall, seepage and displacement in the dam sections which is transferred to the database server through the gateway nodes. the sensor used in wdsn is different from the common one. it is an intelligent one which can not only perceive the variation of tested physical value and output the corresponding change information, but also communicate with others. the intelligent sensor has several parts, such as sensitive components, embedded processors, storages and power supplies. these smart sensors in wdsn network are very important for measuring the reliability of the dam because at any moment it is possible to get information about the functionality of the device. wdsn structure is shown in fig. 2. fig. 2 wireless sensor network (wsn) the whole network is divided into several clusters, each of which is a monitoring area. the wireless sensor nodes in each cluster can communicate with each other and transmit the data to the gateway through multi-hops. the gateways can also communicate with each other and transmit the data to the sink. 4.3. communication services for automated measurements which are not included in the information system which could provide data to user outside of the system, it is necessary to set up special services for communication with measuring systems. due to the specific requirements for the reliability of the measurement system it is not recommended to directly access data. these services carry out local data collecting and sending on the processing and validation. 428 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać in the structure of the service communication, module for data collection is directly connected to measuring systems and has a central role [25]. module collects data from various sources, translates them into a standard format and passes them to a service for processing and validation of data. with this module, depending on the number and types of measuring systems which need to communicate, participants in the services are software components for the acquisition, which are divided into: components for communication with passive sensors, components for communication with active sensors, components for communication with passive data logger, the components for communicating with an active data logger and components for the information contained in the files. each of these components must implement the appropriate interface module for data collection. the number of components of one type is only limited with computing resources, while the number of these types of components is specified with configuration of measuring systems. the latter means that the concrete implementation of these services on an object does not have to contain all the components, but it is possible to add the components in the case of the extension configuration. fig. 3 communication services with measurement systems (adopted from [25]) 5. detecting sensor failure and continuing further work during the life cycle of the dam instruments the risk of cancellation of individual sensors is, of course, increasing, so the safety assessment of the dam should be brought without taking into account the measurements from these sensors. consequently, in order to implement the iot in monitoring and dam safety management, it is necessary to implement the adaptive algorithm for detecting sensor failure. algorithm should signal on time which measurements are missing, i.e. without which sensor the decision on safety of the facility has been made. using internet of things in monitoring and management of dams in serbia 429 the algorithm for failure detection of sensors, suitable for use in iot, represents the connection between the adaptive system for modeling the behavior of the dam and the acquisitions module for communication with sensors in the monitoring network. there are several different approaches to modeling the behavior of the dam. the earliest models were based on the application of statistical [26] and numerical [27] methods. the development of artificial intelligence has enabled the application of new techniques such as artificial neural networks [28], genetic algorithms [29] and adaptive neuro-fuzzy systems [30]. for application in the internet of things are the most suitable adaptive models that provide results in real time. one such has been described in [18]. it is a hybrid system that combines statistical models and genetic algorithms, so it can model the expected behavior of the dam. the basis of this system is the linear regression model, which is sensitive to the change of input parameters set. for this reason, the adaptive part is added to the system, in which, genetic algorithms, represent the basis. in accordance with the theory of genetic algorithms, model of linear regression is seen as the optimization problem, where each regression model represents one entity within the population. based on the available measurements, the generator of regressor creates a corresponding set of functions that can be applied. this means that there is always an alternative to the main model in case that some information is not available, so that the safety dam monitoring is not compromised. at the same time, in case of missing data, through the communication module with sensors, it is possible to get information from which sensor in network, the information is received and the system should timely alert about partial malfunction of the sensor. in the case of missing the entire set of data from a sensor (all measurements that the sensor performs), the system announces a complete malfunction of the sensor. results of regression models represent the parameters on the basis of which the current state of the dam is estimated and alarming is performed, in case that the parameters deviate from the expected values. with this information, it is also important to give information of the available measurements in the system and the state of the sensors, because as noted earlier, the regression model is formed on available measurements in the system. this could jeopardize the credibility of the results obtained from the regression model in a situation of incomplete measurements. for this reason, the condition of sensors is an important factor in making a correct decision about the real state of the dam. further development will be directed to the use of collected data in the advanced numerical models (fem etc.) and implementation of cloud computing. 5.1. fem for the modeling of the stress-deformation and filtration phenomena on the dam finite element method (fem) is used. fem can form a physical model of the building with the surrounding rock mass. to make this model fit the real model of a dam, it is necessary to repeat a particular phenomenon at the dam that occurred during operation. based on the results of technical surveillance calibration of material parameters is carried out and fem gives information about a realistic model of the dam, which should serve to further monitor the behavior of the object in order to anticipate certain undesirable situations in the further exploitation [31] [32]. an example of an arch dam model is shown in fig. 4. 430 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać fig. 4 fem arch dam to carry out safety analysis over the present state model, numerical module for assimilation of measured data should be developed. this module should enable, on the basis of the data obtained from the information system for technical monitoring, assimilation of measurements, i.e. determine updated values of fem model parameters. the core of the module consists of optimization algorithms required for the assimilation of measurements and automated communication with numerical modules. up to date parameters of individual material models that form the fem model describe real state of construction. 5.2. big data and cloud in remote sensing internet of things (iot) is a concept that includes all the objects around us as part of the internet. coverage iot is very large and includes a variety of smart devices such as smart phones, digital cameras, smart rain gauge, an outside temperature sensor and a variety of other types of sensors. when all these devices are interconnected, they provide much more intelligent processes and services that can be used in various areas. such large number of devices and sensors on dams connected to the internet provides a multitude of services and produces a large amount of data (big data). cloud computing is a model for on-demand-access to repository of configurable resources (budget, networks, servers, storage, applications, services, software, etc.), which can easily provide such infrastructure, applications and software. platforms based on a cloud help us to connect to the things that surround us, so it is possible to access them from anywhere at any time. cloud acts as a front-end to access the iot. applications which interact with devices, such as sensors, have special requirements for massive storage to record big data, a huge power computation that would provide data processing in real-time and high speed internet to allow high speed data throughput [33]. using internet of things in monitoring and management of dams in serbia 431 6. proof of concept the main goal of practical work is the dam safety. computers with limited resources need to be less burdened, i.e. the execution of operations should be relocated to the server. furthermore, it is necessary to increase the level of reliability of the dam safety system. this new innovative system would be implemented on dam prvonek, which is one of the last built dams in serbia and has modern sensors. fig. 5 describes implemented system on dam prvonek. the figure shows the data flow from the measuring instrument to the end-user. the measured data are temporarily stored in data logger. every data logger has own software for downloading data, which is installed on acquisition server. downloaded data format is csv (comma separated values). the acquisition server sends data to the central server. end-users use specific software for data analyses. the installed software on the computer of end-user uses resources of the computer and not server. if operations are complex, it is possible that operations will need a lot of computer resources. fig. 5 current data flow on dam prvonek the next figure (fig. 6) shows further project improvement. all data from acquisition servers are sent to the central server on the cloud. all data transformation and processes are performed in the cloud. the above mentioned represents an etl process (extract, transfer and load). all operations use server’s resources. end-user computer works only with prepared data for reports and has much more free resources for other operations. 432 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać all data are available to end-users 24/7. end-user can access data any place any time. fig. 6 model for cloud and big data it is possible to apply a new system on all instruments: rain gauges, water level gauges, flow meters, precipitation meters, etc. this new system is useful for all types of dams. implementing wsn architecture from fig. 2 will make a system of sensors more reliable and data more accurate. the nodes within wsn network communicate between themselves and send data about the malfunctioning sensor in real time through gateway to sin node, which further sends data onto the cloud server. the software for mathematical calculations generates statistical curve of dam stability using the received data. this statistical curve has to be in specific value limits. the curve could be generated based on data from different instruments. most frequently used instruments are piezometer, coordinometer, clinometer and thermometer. piezometer measures level of ground and underground flows. coordinometer measures dam movements. clinometer measures the angle of movement, while thermometer measures temperature. if there is a malfunctioning of instrument, a new formula, which excludes given instrument, is automatically generated by specific algorithms and provides approximately the same curve as if all instruments were in perfect working order. end user launches software for generating curve. all received data are stored in database on cloud server. the new system provides database with more reliable data which enables better analyzes and reporting. using internet of things in monitoring and management of dams in serbia 433 7. conclusion in this paper authors give an example for possible application of latest technologies such as internet of things, sensorml and wireless sensors networks with software for dam safety management. combination of these technologies and software improves functionality of dams. sensor technology, computer technology and network technology are advancing together while the demand grows for ways to connect information systems with the real world. linking diverse technologies in this fertile market environment, integrators are offering new solutions for plant security, industrial controls, meteorology, geophysical survey, flood monitoring, risk assessment, tracking, environmental monitoring, defense, logistics and many other applications [34]. internet of things, as a technology that is in trend, allows sensors to become intelligent by connecting them to the internet. this allows sensors to communicate with each other. application of iot in modern business significantly improves operations of companies. application of iot on dams would provide more efficient recording of failed sensors, which would significantly reduce the probability of damage occurring. with the collected data about failed sensors, it is possible to make database of reliability instruments, which directly shows the reliability of dams. combination of wsn, big data, cloud computing with iot would greatly improve the operation of the dams. all technologies produce a lot of data, which requires massive data storage. cloud, as a form of technology, that gains momentum as iot, could allow storage of large amounts of data on the web. with cloud computing end users could access the data anytime and anywhere. all data processing would be done on a cloud, which would considerably make the functioning of the system for data collection faster and more reliable. using the last forms of technology such as big data, cloud computing and iot will improve the operation of dams in serbia and significantly minimize the chances for failure to happen. serbia has good quality dams, so it is only needed to start implementing new technologies so that we could possibly prevent potential failure from happening. the implementation of the system for managing and monitoring dam safety and the implementation of new technology reduces the risk of a major failure of the dam. acknowledgement: the authors would like to thank to the ministry of education, science and technological development, republic of serbia, for financial support project number 174031. references [1] "assosiation of state dam safety officials," april 2012. [online]. available: http://www.damsafety. org/media/documents/downloadabledocuments/livingwithdams_asdso2012.pdf. [2] david s. bowles, loren r. anderson and terry f. glover, "the practice of dam safety risk assessment and management: its roots, its branches, and its fruit," 1998. [3] david s. bowles, loren r anderson , terry f. glover and sanjay s. chauhan, "dam safety decisionmaking: combining engineering assessments with risk information," 2003. [4] charles r. farrar and keith worden, "an introduction to structural health monitoring," the royal society, 2007. [5] shen zhen-zhong, chen yun-ping, wang cheng, li tao-fan and li ze-yuan, "development of realtime monitoring and early warning system of dam safety," vol. 3, 2010. 434 r. martać, n. milivojević, v. milivojević, v. ćirović, d. barać [6] jesung jeon, jongwook lee, donghoon shin and hangyu park, "development of dam safety management system," advances in engineering software, vol. 40, no. 8, p. 554–563, 2009. [7] i. bojanova, "defining the internet of things," computing now, 16 march 2015. [online]. available: http://www.computer.org/web/sensing-iot/content?g=53926943&type=article&urltitle=defining-theinternet-of-things. [8] f. bao t., s. gu c. and y. zhang, "remote safety monitoring management information system for dam group," in 2nd international conference on structural health monitoring of intelligent infrastructure, shenzhen, 2006. [9] jeon jesung, lee jongwook, shin donghoon and hangyu park, "development of dam safety management system," advances in engineering software, vol. 40, no. 8, pp. 554-563, 2009. [10] h. z. su and z. p. wen, "intelligent early-warning system of dam safety," proceedings of 2005 international conference on machine learning and cybernetics, vols 1-9, pp. 1868-1877, 2005. [11] enji sun, xingkai zhang and zhongxue li, "the internet of things (iot) and cloud computing (cc) based tailings dam monitoring and pre-alarm system in mines," safety science, vol. 50, no. 4, pp. 811-815, 2012. [12] peng lin, junfeng guan and qingbin li, "a real-time zigbee-based location system in xiluodu arch dam," civil engineering, architecture and sustainable infrastructure ii, pts 1 and 2, vols. 438-439, pp. 1329-1333, 2013. [13] qiaoming zou, lijun qin and qiyan ma, "the application of the internet of things in the smart grid," materials science and information technology, pts 1-8, vols. 433-440, no. 2012, pp. 3388-3394, 2011. [14] yang yingxin, hou chunhua and han yanxia, "design of safety monitoring system of tailing pond based on gis technology," electronic information and electrical engineering, vol. 19, pp. 408-410, 2012. [15] shifeng fang, li da xu and yunqiang zhu, "an integrated system for regional environmental monitoring and management based on internet of things," ieee transactions on industrial informatics, vol. 10, no. 2, pp. 1596-1605, 2014. [16] dragan maksimović, tina savić-tomić and maja pavić, "uticaj inoviranog oskultacionog sistema na pouzdanost osmatranja, upravljanja i održavanja glavnog objekta he “djerdap 1”," in sdvb prvi kongres, bajina bašta, 2008. [17] ljubomir petrović and srdjan djurić, "osavremenjavanje sistema osmatranja na brani gruža," in sdvb prvi kongres, bajina bašta, 2008. [18] b. stojanović, m. milivojević, m. ivanović, n. milivojević and d. divac, "adaptive system for dam behavior modeling based on linear regression and genethic algorithms," advances in engineering software, vol. 65, pp. 182-190, 2013. [19] n. milivojević, n. grujović, d. divac, v. milivojević and r. martać, "information system for dam safety management," icist, vol. 1, pp. 56-60, 2014. [20] mike botts and lance mckee, "sensors online," 1 april 2013. [online]. available: http://www. sensorsmag.com/networking-communications/a-sensor-model-language-moving-sensor-data-internet-967. [21] "the ogc approves sensorml 2.0, advanced standard for internet of things," ogc, february 2014. [online]. available: http://www.opengeospatial.org/node/1971. [22] "internet of things simple sensor (sensorml 2.0 examples)," [online]. available: http://www.sensorml. com/sensorml-2.0/examples/iotsimple.html. [23] xinying miao, jinkui chu, linghan zhang and jing qiao, "development of wireless sensor network for dam monitoring," journal of information & computational science, vol. 6, no. 9, p. 1609–1616, 2012. [24] i. f. akyildiz, w. su, y. sankarasubramaniam and e. cayirci, "wireless sensor networks: a survey, computer networks," no. 38, p. 393–422, 2002. [25] razvoj sistema za podršku optimalnom održavanju visokih brana u srbiji (tr37013), 2011-2015. [26] r. ardito and g. cocchetti, "statistical approach to damage diagnostic of concrete dam by radar monitoring: formulation and pseudo-experimental test," engineering structures, vol. 28, no. 14, p. 2036–2045, 2006. using internet of things in monitoring and management of dams in serbia 435 [27] yifeng chen, ran hu, wenbo lu, dianqing li and chuangbing zhou, "modeling coupled processes of non-steady seepage flow and non-linear deformation for a concrete-faced rockfill dam," computers & structures, vol. 89, no. 13-14, p. 1333–1351, 2011. [28] j. mata, "interpretation of concrete dam behaviour with artificial neural network and multiple linear regression models," engineering structures, vol. 33, no. 3, p. 903–910, 2011. [29] chang xu, dongjie yue and chengfa deng, "hybrid ga/simpls as alternative regression model in dam deformation analysis," engineering applications of artificial intelligence, vol. 25, no. 3, p. 468– 475, 2012. [30] vesna ranković, nenad grujović, dejan divac, nikola milivojević and aleksandar novaković, "modelling of dam behaviour based on neuro-fuzzy identification," engineering structures, vol. 35, p. 107–113, 2012. [31] d. divac, d. vuĉković and m. živković, "modeliranje filtracionih i naponsko-deformacionih procesa u interakciji akumulacionog jezera, brane i stenske mase, na primerima brane sv. petka u makedoniji i brane prvonek kod vranja," graċevinski kalendar, 2004, pp. 9-57. [32] m. kojić, r. slavković, m. živković and n. grujović, metod konaĉnih elemenata i (linearna analiza), kragujevac: mašinski fakultet u kragujevcu, 1998. [33] prahlada b. b. rao, payal saluja, neetu n. sharma, ankit mittal and shivay veer sharma, "cloud computing for internet of things & sensing based applications," 2012 sixth international conference on sensing technology (icst), pp. 374-380, 2012. [34] "sensor web enablement (swe)," ogc, [online]. available: http://www.opengeospatial.org/ogc/ markets-technologies/swe . [35] l. nachabe, m. girod-genet and b. el hassan, "unified data model for wireless sensor network," ieee sensors journal, vol. 15, no. 7, pp. 3657-3667, 2015. [36] a. ghosh and s. k. das, "coverage and connectivity issues in wireless sensor networks: a survey, pervasive and mobile computing," no. 2, p. 303–334, 2008. [37] y. sang, h. shen, y. inoguchi, y. tan and n. xiong, "secure data aggregation in wireless sensor networks: a survey," p. 315–320, 2006. [38] "ogc," [online]. available: http://www.opengeospatial.org/standards/sensorml. 10479 facta universitatis series: electronics and energetics vol. 35, no 3, september 2022, pp. 405-420 https://doi.org/10.2298/fuee2203405r © 2022 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper comb jamming as a strategy for rcied activation prevention jovan radivojević, mladen mileusnić, aleksandar lebl, verica marinković-nedelicki iritel a.d., belgrade, batajnički put 23, serbia abstract. the main objective of this paper is the analysis of comb jamming as a technique for rcied activation prevention. presentation of three strategies for comb signal generation follows after comprehensive survey of various jamming techniques in the introduction. there are two paper original contributions. the first one is quantitative comparison for three signal generation techniques of their emission power in relation to barrage jamming under the condition of equal ber value. the second contribution is determination of exact ber value as a function of emission power in the case of barrage jamming. until now we have made different analyses and comparisons starting from estimated emission power. the analysis procedure is performed for qpsk modulated rcied activation signal. power saving is evident for all three methods of jamming signal generation. it is proved that additional 2.5db of power saving is achieved by equalization of frequency components level in comb signal. the analysis in this paper shows that comb jamming allows the same effects as barrage jamming, but with lower emission power. key words: remote controlled improvised explosive devices jamming, comb jamming, emission power, qpsk modulation, bit error rate 1. introduction procedures of fight against remote controlled improvised explosive devices (rcied) today are becoming more and more important. this method of activation allows a significant degree of comfort for an attacker to realize his intentions from a safe distance, where his activities are difficult to be detected. besides, there are few other reasons why remote control is very attractive to the attacker for explosive devices activation: more effective and precise bombing, absence of wires gives autonomy to the attacker and the possibility that an attacker is arrested or killed is decreased [1]. different wireless communication techniques are available to the attacker. these techniques are not implemented only in highly specialized, hardly available equipment, but may be found in received february 12, 2022; revised march 25, 2022; accepted april 7, 2022 corresponding author: aleksandar lebl iritel a.d., 11080 belgrade, batajnički put 23, serbia e-mail: lebl@iritel.com 406 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki low-cost, commercial devices, such as long range cordless telephones, cell phones, satellite phones, radio controlled toys, car alarms, keyless automobile door openers, wireless doorbell buzzers, and so on [1]. it is this variety of attacking techniques that set high requirements in the development of the jammer of rcied activation. it is necessary to implement a wide variety of jamming strategies and generate a significant number of jamming signal types, and to change signal parameters within wide limits for each signal type. not only are various signal types necessary, but it is also important to develop new jamming technology, or signal type in a very short time interval, measured in weeks, not in months or years. that is why it is important to have well organized development and production of rcied jamming equipment, as the one presented in [2]. very important element in the organization of such development and production is consolidating data about performed rcied attacks in a database. event logs, implemented at the systems from one of the suppliers, presented in [3], may be implemented for such a purpose. after this introduction, a survey of applied rcied jamming systems is given in the section 2. section 3 of the paper presents the three most important techniques for comb signal generation. section 4 deals with the characteristics of frequency spectrum of these techniques. the exact bit error rate (ber) characteristics of sweep and barrage jamming are compared in the section 5. the procedure to define parameters of comb jamming is described in the section 6. the emission power relation between comb and barrage jamming is investigated in the section 7. paper conclusions are in the section 8. 2. a survey of applied rcied jamming systems frequencies implemented in commercial devices used for rcied activation are, a priori, known and these frequencies should be dominantly jammed to achieve successful jamming. a survey of commercial devices frequencies, usually used for rcied activation, may be found in [4]. these frequencies include those implemented for mobile communication systems (gsm, umts), dect telephones, remote control toys, wireless doorbells and gate drivers, car alarms, and so on. a survey of frequencies shows the part of wireless device spectra which may be adapted for rcied activation. the applied signal power in these devices is variable in the range from several tens of milliwatts to several watts [1]. a very detailed presentation of jamming techniques with mathematical analysis may be found in [5]. the main analyzed or just explained jamming techniques in [5] are noise jamming (separately broadband, partial-band, narrowband depending on the number of jammed channels), tone jamming (single tone and multiple tones), sweep jamming and pulse jamming (in fact comb jamming according to this paper). contribution [6] emphasizes two specific jamming techniques: following (or follower) jamming and smart jamming. following jamming is applied against frequency hopping: here a jammer follows carrier frequency changes on the transmitted signal and then performs jamming on each hopped frequency. the jamming probability when follower jamming is applied is calculated in [7]. it is proved in [7] that channels scanning speed increases linearly as the function of the hopping rate for the lower values of jaming probability, but this dependence is hyperbolical for the higher jamming probability values. in smart jamming the knowledge of transmission protocol is the key issue, because jamming is based on the attack towards the places of protocol vulnerabilities, such as error correction checksum, acknowledgement messages, transmitting overloading (false messages), comb jamming as a strategy for rcied activation prevention 407 and so on. the special threat for successful jamming in the group of smart jamming strategies is the case when timing channels normally intended for regular function of the protected device are maliciously used as covert channels to send activation signal [8]. contributions [9] and [10] present an idea that there is a specific, optimum technique for jamming each kind of modulations. in these contributions jamming of digital amplitude-phase modulated signals is analyzed and it is proved that the same kind of jamming signal modulation as the activation signal modulation is not always the optimum choice. such an analysis is important only in the case that we a priori know the type of implemented modulation in activation message coding, but this is very rarely fulfilled. reactive (responsive) jamming technique is lately more and more implemented [4], [11] [16]. this technique may be treated, in fact, as a kind of smart jamming because jamming is based on successful detection of frequency band implemented for rcied activation signal transmission. in the existing solutions usually is implemented fast fourier transform (fft), as a fast and reliable detection algorithm [4], [11]. in [17] it is proved that rcied activation signal detection on the basis of fft analysis may be faster and in this way more reliable than frequency sweep in active jammer. in [18] this analysis is further expanded to other reactive detector types. a survey of problems, arising in the realization of reactive jammers, is presented in [11]. among them, the greatest attention in [11] is devoted to time synchronization in the case of simultaneous function of multiple jammers. in [12], [13] the characteristics of some other detector types (energy detector, matched filter detector, feature detector and detector based on the calculation of eigenvalues of the covariance matrix) are theoretically compared one to the other. contribution [14] is devoted to activation signals jamming in one specific network (ieee. 802.15.4), where message packet duration is very short (only about 350μs), thus causing necessity for a very short detection time. in the case of universal jamming (not for specific activation signal type), the achieved detection time is less than 1ms in [15], and even about 200μs for the frequency range of 6ghz in [16]. a survey of implemented techniques for remote activation of improvised explosive devices and the frequency band intended for each technique implementation may be found in [19]. besides these techniques, sms message sending is very attractive and in some world regions dominant technique of rcied activation, because of its realization simplicity [20], [21]. rcied activation signal sending by sms messages may be prevented or delayed by various detection algorithms implemented in base stations [21]. modern solutions of rcied activation signal jammers should follow development in communication procedures and techniques. one such direction which aims at reliable and hardly detectable communication is implementation of frequency hopping signals. today hopping speed in realized systems may be significantly higher than it is presented in [7]. responsive jammers realized on the base of rcied activation signal detection in some cases have the possibility to follow frequencies changes when frequency hopped signal is applied [22], [23]. according to the achieved detection rate, the solution [22] may block the signal with 300hops/s while the solution [23] is effective even when the hop rate is 10000hops/s. the systems [22], [23] are available now and may be purchased on the market. our idea is to implement active jamming in a broad frequency range with not too high jamming power and thus to avoid the risk of, perhaps, unsuccessful rcied activation signal detection. one possible solution with these desired characteristics is comb jamming signal implementation according to the principles presented in this paper. 408 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki there are two mutually different accesses to jamming signal generation. the first one is to generate the desired shape of jamming signal at low/lower frequency band and then to shift it by the modulator to the necessary frequency band [24]. it is easier to model the signal at lower frequencies, but modulation is additional complication in the solution practical implementation. the other possibility is to directly generate the signal in the jammed frequency band. our intention is to consider the first possibility since we want to cover the broad frequency range in one moment and the generated signal may be shifted by several modulators adjusted at different frequency bands in the same time. a completely new approach to jamming signal generation is presented in [25], [26]. there is no need to take care about the shape of jamming signal or even to have such a generator. the solutions belong to the group of responsive jammers. when this approach is applied, the detected signal which has to be jammed is first delayed by the implementation of optical lines with adjustable, precise delay and then transmitted as the generated jamming signal. the selected value of delay determines the level of rcied activation signal attenuation. instead of this approach, we apply a specific jamming signal generation again to avoid the possibility that rcied activation signal is not detected. the complexity of the fight against the rcied activation and development perspectives of remote control of these devices were already noticed in [27]. there were made measurements of the bit error rate in the transmission when several jamming procedures types are implemented, thus presenting the possibilities for the fight against the then existing devices, but also against devices, which would appear in the future. the obtained measurement results led to the development of practical devices for fight against rcied activation [28] [30]. in these devices generation of very heterogeneous jamming signal types is applied: continuous wave (cw), amplitude shift keying (ask), phase shift keying (psk), frequency shift keying (fsk), comb signal (barrage jamming), sweep signal (with different sweep strategies, as, for, example, single sweep, multiple sweep, sweep with frequency gap, where there is no sweep signal and where jamming device management may be realized, etc.), white gaussian noise (wgn), and so on. among all these techniques jamming by sweep signal and jamming by wgn are most often applied. the characteristics of sweep jamming are analyzed in detail in [31] [33]. in [34] there is compared necessary power to realize jamming of mpsk (m-ary psk) modulated rcied activation message by sweep signal and by wgn, but without considering simultaneous influence of sweep signal and noise which is normally present in the system environment (environmental noise). sweep signal and wgn are in some cases combined in one unique signal, as demonstrated in [35]. a method for wgn signal generation is analyzed in [36]. the results presented in these last six papers are based on iritel great experience in developing jamming devices of various applications: against rcied activation [37], for jamming mobile telephony systems [38] and for radio surveillance and jamming [39]. comb jamming is a special technique for generating a signal for rcied activation prevention, similar to, but more energy efficient than barrage jamming. iritel is one of the pioneers for such jamming implementation [40], [41]. regarding recent times, the main characteristics of comb jamming are presented in [42]. comb jamming as a strategy for rcied activation prevention 409 3. techniques for comb jamming realization the main purpose of comb signal definition for jamming is to achieve similar implementation characteristics as if barrage jamming is applied, but with reduced emission power. comb signal consists of a number of discrete, usually equidistant components when considering frequency spectrum. in this way continual part of frequency spectrum is replaced by only one frequency component, but with the same jamming effect. there are three main methods for comb signal generation [43]: rectangular pulse train, filtered pulse train and pseudorandom sequence. the signal with the desired frequency characteristics (number of discrete frequency components, components distance in frequency domain) is usually first generated in a low frequency band. after that such a signal modulates a carrier in order to be shifted to the pre-defined frequency band. rwg τ t lpf txmod posc a fig. 1 principle block-scheme of rectangular pulse train jamming signal generation figure 1 presents the principle block-scheme for generating the rectangular pulse train signal. the generation process is initiated in the rectangular waveform generator (rwg), where the pulses of duration τ and period t are formed. the amplitude of pulses is a. the frequency spectrum of the generated pulses is band-limited in the low-pass filter (lpf). the frequency characteristic of this lpf is flat in the pass-band, meaning that only the undesired frequency components are truncated. amplitudes of frequency components in the pass band are not changed and they remain as generated. such modified impulses have the frequency spectrum at low frequency band and this spectrum is shifted to the required higher frequency band in the modulator (mod). here the generated pulse train signal is multiplied by the signal from the programmable oscillator (posc). it is possible to produce variable signal frequency band changing the frequency of posc, i.e. to additionally sweep the generated comb signal in the case that it is necessary to jam wider frequency band (one such application example for jamming mobile communication in gsm systems may be found in [44]). at the end the generated jamming signal is transmitted by a transmit antenna (tx). the generation of filtered pulse train signal is a slight modification of the previous method. its principle block-scheme is equal to the one presented in figure 1. difference is in the function of lpf. besides limiting the pass-band width, this filter also modifies the amplitudes of the generated comb frequency components with the aim to achieve approximately flat frequency characteristic in the pass band. in lpf the higher frequency components are more amplified (or, in other sense, less attenuated) than the lower frequency components. modifications are also noticeable in the pulse train signal shape in the time domain [43]. 410 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki figure 2 presents the principle block-scheme for comb signal generation according to the third method based on pseudorandom sequence implementation. the initial signal is generated in the linear feedback shift register (lfsr). the period of a sequence is t and it consists of n pulses whose duration is τ (i.e. it is t=n·τ). the amplitude of each pulse is +a or –a. the remaining algorithm realization phases are the same as for the previous algorithms: the spectrum of the generated comb signal is filtered in lpf and transferred to higher frequencies after signals modulation (implementation of blocks mod and posc). txmod posc lfsr lpf τ t a a t τ τ fig. 2 principle block-scheme of pseudorandom sequence based jamming signal generation 4. frequency spectrum characteristics of three methods for comb signal generation frequency spectrum of rectangular pulse train signals is well-studied and presented in many references [43]. this spectrum is discrete with equidistant components and may be expressed by the equation 2 2 2 2 2 sin ( ) ( ) ( ) ( )k k a ktp f f k tt t  =−   =   −         (1) where p(f) presents signal power spectral density, δ(f-k/t) is designation for places where discrete frequency components are situated and the remaining part in the equation presents frequency components power envelope. the meaning of variables a, τ and t is already illustrated in the fig. 1. frequency spectrum of the signal shaped as the rectangular pulse train is presented in the fig. 3. such signal is obtained implementing the comb signal generator from the fig. 1. spectral components envelope is the function in the form (sin(x)/x)2 and the number of frequency components in the main lobe is selected by the ratio k=t/τ. the function of the lpf is to pass certain number of components from the main lobe leaving them with unchanged amplitudes. in the example from the fig. 3 it is k=6 and the lpf passes total 2·i+1 frequency components where i=3 is the number of non-attenuated frequency components on both sides related to the central component. comb jamming as a strategy for rcied activation prevention 411 f p(f) k=0 k=1k=-1k=-2k=-3k=-4k=-5k=-6 k=2 k=3 k=4 k=5 k=6 k=t/τ=6 i=3 fig. 3 frequency spectrum of rectangular pulse train signal frequency spectrum of the signal shaped as the filtered rectangular pulse train is presented in fig. 4. its initial shape is equal to the one presented in fig. 3 with the addition that the lpf characteristic (the curve designated by lpf in figure 4) has to approximate reciprocal function of (sin(x)/x)2 in the filter pass band. in this way 2·i+1 transferred frequency components at the generator output have approximately the same level. f p(f) k=0 k=1k=-1k=-2k=-3k=-4k=-5k=-6 k=2 k=3 k=4 k=5 k=6 k=t/τ=6 i=3 lpf fig. 4 frequency spectrum of filtered rectangular pulse train signal similar to the case of rectangular pulse train, frequency spectrum of the pseudorandom sequence signal may be presented by the equation ( ) ( )k k kp f p f n  =− =  −    (2) where coefficients pk which model the frequency spectrum envelope are 2 1 for 0kp k n = = (3) 2 2 2 sin ( ) 1 for 0 ( ) k k n np k kn n  +=      (4) 412 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki variables a, n and τ are already defined in the fig. 2 and in the explanation dealing with the same figure. f p(f) k=0 k=1k=-1k=-2k=-3k=-4k=-5k=-6 k=2 k=3 k=4 k=5 k=6 n=t/τ=6 i=3 fig. 5 frequency spectrum of the pseudorandom sequence signal fig. 5 presents the frequency spectrum of the generated pseudorandom sequence signal [43], [45]. comparing to the frequency spectrum of rectangular pulse train (fig. 3), difference exists at the component for i=0. this component has very low level (it is nearly eliminated) comparing to other components in the main lobe, because the typical values of n are more than 10. as frequency spectrum of pseudorandom sequence signal is similar to the spectrum of rectangular pulse train, all analysis in the continuation of the paper are performed only for this second type of signal. now, when we have explained the main characteristics of comb signal in time and frequency domain, the logical question is: what are the possibilities for this signal generation and practical implementation. if we want to have a wide main frequency lobe, the rectangular pulse duration τ should be very narrow. in a hardware sense it is difficult to generate such an impulse with a significant amplitude level. on the other hand, if we adopt the longer τ, there are fewer frequency components in the main lobe and there is a need for more additional hardware processing to expand the frequency spectrum. this means that we need to have more modulators and programmable oscillators connected as in fig.1 or fig. 2 to realize complete solution. generally, the process of shifting and shaping the frequency spectrum of comb signal which is generated in lower frequency band is also challenging. these are the reasons why comb jamming is not often practically applied. 5. performances comparison of sweep and barrage jamming the main purpose of comb jamming implementation is to achieve benefits as at barrage jamming, but with lower emission power. our first step in such an analysis is to compare the performances of pure sweep and pure barrage jamming. such an analysis is already approximately performed in [34] for mpsk modulated signals. the deviation from the accurate result is mainly caused by the fact that it is supposed that only one error in the symbol is possible regardless of the jamming signal level. in other words, the situation when both bits in qpsk symbol are faulty is replaced by only one faulty bit. comb jamming as a strategy for rcied activation prevention 413 0,01 0,1 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 s/n (db), s/i (db) p b s/n for s/i=60db s/i for s/n=60db 0,01 0,1 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 s/n (db), s/i (db) p b s/n for s/i=60db s/i for s/n=60db 0,01 0,1 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 s/n (db), s/i (db) p b s/n for s/i=60db s/i for s/n=60db fig. 6 ber (pb) as a function of the ratio s/n in the case of barrage jamming and as a function of s/i in the case of sweep jamming in this paper we implemented more accurate comparison in the case of qpsk signal jamming. the exact number of faulty bits in a symbol is supposed in an estimation process. the estimation is based on the implementation of our originally developed simulation program which is already presented in [35]. the purpose of the simulation program is to determine bit error rate (ber) when mpsk modulated signal is jammed by the simultaneous influence of sweep and barrage jamming. for the implementation in this paper we select one of the two jamming signals to have very low level. in order to simulate barrage jamming, we have defined the sweep signal level by the expression s/i=60db and in order to simulate sweep jamming we have defined noise level by s/n=60db, where s is reserved for the level of qpsk modulated rcied activation signal and i and n are the levels of sinusoidal interference and noise signal, respectively. fig. 6 presents the ber values as a function of the ratio s/n when barrage jamming is implemented and as a function of s/i when sweep jamming is implemented. for the ber values greater than 0.1 (which are of interest in jamming applications) it is necessary to apply higher interference signal level in the case of barrage jamming to achieve the same ber as if sweep jamming is implemented. difference in interference level is about 3db when it is ber=0.2, 4db when it is ber=0.3 and 4.8db when it is ber=0.4. 414 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki 6. comb jammer parameters definition jammed bandwidth is usually the initial condition which has to be defined in each jammer realization. this bandwidth is then transferred to the bandwidth important for comb jammer design. let us suppose that 2·i+1 is the number of discrete frequency components which is expected to effectively cause jamming. this number of frequency components is odd, but the generality of results is not lost because we may always select one component more than it is necessary. the second parameter which has to be satisfied at the beginning is the desired ber value. the first problem in jammer design is to determine the optimum number of frequency components in the main lobe of a comb signal before lpf when the number of generated jamming frequencies is known. optimum number of frequency components is selected so that jamming signal emission power is minimized for the pre-defined ber. when rectangular pulse train or filtered rectangular pulse train is designed, the problem is manifested as the selection of the ratio τ/t. the comb jamming signal is presented as the sum of a number of frequency components. according to the shape of frequency spectrum in figure 3 for the rectangular pulse train, the minimum level has the highest frequency component in the main lobe which is passed through the lpf (i.e. the component of the order i). comb jammer has to be designed so that this component satisfies the desired ber value. as a consequence, all other frequency components after the lpf have the higher level than the component of the order i and thus cause the higher ber value. the fact that comb signal has the minimum power means that its amplitude a is minimum. there are two opposite effects, which have the influence on the value of a. first, if we select the lower value of ratio τ/t, there will be more frequency components in the main lobe and the frequency components after the lpf will tend to be equal. the effect of this modification is lower value of a. but, according to the equation (1), lower value of τ/t means that multiplication factor in this equation in front of the part in the shape (sin(x)/x)2 is decreased and it is necessary to compensate this effect by the higher value of a. that is why there is the ratio τ/t where signal amplitude a is minimum. this is illustrated in figure 7. there are three presented characteristics. each of them is for the same width of filter pass-band, i.e. equal signal period t, but for different pulse width τ. f p(f) k=0 k=1k=-1k=-2k=-3k=-4k=-5k=-6 k=2 k=3 k=4 k=5 k=6 i=3 1 2 3 fig. 7 frequency spectrum of rectangular pulse for i=3 and three different values of τ comb jamming as a strategy for rcied activation prevention 415 the curve 1 in figure 7 corresponds to the case when the number of frequencies in the main lobe is significantly higher than the number of frequencies which have to cause jamming. signal energy in the main lobe is distributed on relatively high number of frequency components which have relatively low level each. the curve 2 is opposite case, when a low number of frequencies are in the pass-band. these frequencies have higher level than in the previous case. the curve 3 is in the middle when considering signal level at f=0, but its level at the frequency f=i is maximal. our problem to determine the optimum ratio τ/t is now solved after finding the first and the second derivative of the expression (1) at the point i, because it is necessary to find when the power in this point is maximal. the first derivative when considering only spectrum envelope in the (1) is expressed as 2 sin(2 ) i k i k xdp a dx k =−    =     (5) while the second derivative is 2 2 2 2 cos(2 ) i k i d p a k x dx =− =       (6) where it is x=τ/t and components between k=-i and k=i are passed through the lpf. according to the real conditions from the figure 3, it must be i<(1/x). in the point i the expressions (5) and (6) become ( ) 2 sin(2 ) i i xdp a dx i    =     (7) and 2 2 2 cos(2 ) i i xd p a idx     =       (8) the equation (7) is equal 0 if it is satisfied the condition 1 2 x i =  (9) meaning that it is the function extreme. for this x the value of the second derivative according to (8) is less than 0, which proves that emission power in the point defined by (9) is really the maximum. it further means that system gain should have minimum value to reach the desired power level and that emission power should be minimal in that case. 7. emission power relation of comb and barrage jamming we have already emphasized that the intention of comb jamming implementation is to produce the same effect as with barrage jamming, but with the reduced jammer emission power. that is why we are now going to compare the necessary jamming power for these two jamming strategies. let us suppose that our wish is to cause jamming in total 2·i+1 channels. the classical solution is to implement noise signal for jamming which covers continually frequency 416 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki band of these channels. the improved possibility is to implement only one jamming frequency in each channel. the characteristics presented in figure 6 correspond to each one of 2·i+1 considered channels, i.e. frequency components. as a consequence, benefits of filtered rectangular pulse train are directly obvious from figure 6. namely, the power of each frequency component in the filtered pulse train signal is equal and for the same extent lower than uniform noise jamming power to cause the same ber. in this way the total effect of jamming in all channels is also equal to the one presented in figure 6. the necessary emission power decreases when comb jamming is implemented is δp1fp=3db when it is ber=0.2, δp2fp=4db when it is ber=0.3 and δp3fp=4.8db when it is ber=0.4. the benefits are decreased when rectangular pulse train or pseudorandom sequence signal is implemented. to determine the improvement in emission power in this case, we start from the calculation of total emission power related to the case of uniform spectrum emission power. our estimation is illustrated by the example when it is i=3, meaning that total 7 frequency components are passed through the lpf. according to the problem which is earlier defined to be solved, components at i=3 need to have equal power. table 1 illustrates procedure to determine the ratio of comb signal power to the barrage signal power when the sinusoidal component level at i=3 is equal to the value of the power at the same frequency in the case of filtered pulse train or also to the level of barrage (noise) signal. the column with the designation prel presents ratio of considered sinusoidal component power with the order k to the unity power. the last two rows in the table present the power ratio of total 7 frequency components after the lpf to the uniform power in the same frequency band. the data in the last column of the table 1 is graphically presented by fig. 8. it illustrates the power level ratio of frequency components of rectangular pulse train signal to barrage signal where rectangular pulse train signal has (at least) the same jamming effect as barrage signal. the calculated power difference of 2.5db has to be subtracted from the power save when filtered rectangular pulse train signal is implemented to obtain the equivalent power save when rectangular pulse train is considered. therefore, in the case of rectangular pulse train implementation, power save is δp1p=0.5db when it is ber=0.2, δp2p=1.5db when it is ber=0.3 and δp3p=2.3db when it is ber=0.4. these values are significantly lower than the values for filtered pulse train, thus approving the benefits of power spectrum equalization. table 1 power ratio of comb signal for rectangular pulse train to barrage jamming k τ/t prel pcomb/pbarrage -3 0.167 0.011258 1 -2 0.167 0.019044 1.692 -1 0.167 0.025422 2.258 0 0.167 0.027889 2.398 1 0.167 0.025422 2.258 2 0.167 0.019044 1.692 3 0.167 0.011258 1 total 1.768 total (db) ≈2.5 comb jamming as a strategy for rcied activation prevention 417 pcomb/pbarrage k=0 k=1k=-1k=-2k=-3 k=2 k=3 1 2 barrage fig. 8 power spectrum ratio graphical presentation for rectangular pulse train to barrage signal 8. conclusions this paper starts with the comprehensive presentation of iritel contributions in the area of rcied activation jamming. after that analysis is directed towards comb jamming. comb jamming is a wide-band jamming strategy. it efficiently replaces more often implemented barrage jamming strategy. the available literature only emphasizes the fact that comb jamming signal power is lower than barrage jamming power, but without any attempt to quantitatively support this statement [5], [46]. the main paper contribution is quantitative estimation of emission power difference between comb and barrage jamming under the criterion of the same achieved ber value in both cases. the analysis in the paper considers all three most often implemented strategies for comb jamming signal generation: rectangular pulse train, filtered pulse train and pseudorandom sequence. it is proved that power equalization for all generated frequency components when filtered pulse train signal is considered additionally achieves 2.5db improvement of power saving possibilities. in this way power saving is more than doubled comparing to the pulse train signal. the second paper contribution is determination of exact ber value when barrage jamming of rcied activation message is applied. in our previous contributions we have used only approximate calculation of this value [34]. the exact value of this variable is obtained by the implementation of our original simulation program. our other direction of jammers development is related to malicious drones’ missions prevention. modern drone communication channels are often realized using some broadband techniques [47]: frequency hopping spread spectrum (fhss) [48] or direct sequence spread spectrum (dsss) [49]. comb jamming is highly suitable for jamming these two signal types due to its ability to cover great bandwidth with not too high emission power. the solutions presented in this paper are the first step for the future development to allow broadband jamming of drone communication signals. 418 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki references [1] g. kumaraswamy rao and k. v. ranga rao, "intelligent jamming solution to defeat the growing menance of remotely controlled improvised devices (rcieds) using electronic counter measures", int. j. electron. commun. comput. eng., vol. 4, no. 5, pp. 1479–1488, 2013. [2] m. e. pesci, "systems engineering in counter radio-controlled improvised explosive device electronic warfare", john hopkinsapl technical digest, vol. 31, no. 1, pp. 58–65, 2012. [3] j. haystead, "defeat ied mission expands to defensive electronic attack (dea)", the j. electron. defense, pp. 28–40, 2015. [4] k. wilgucki, r. urban, g. baranowski, p. grądzki and p. skarźyński, automated protection system against rcied, military communications and information technology. chapter 7: cognitive radio and spectrum management techniques, 2012, pp. 593–601. [5] r. poisel, modern communications jamming principles and techniques. boston/london, second edition, artech house, 2011. [6] k. wilgucki, r. urban, g. baranowski, p. grądzki and p. skarźyński, "selected aspects of effective rcied jamming", in proceedings of the military communications and information systems conference, warsaw, 2012, pp. 1–5. [7] k. burda, "the performance of follower jammer with a wideband scanning receiver", j. electr. eng., vol. 55, no. 1–2, pp. 36–38, 2004. [8] s. d’oro, l. gallucio, g. morabito and s. palazzo, "efficiency analysis of jamming-based countermeasures against malicious timing channel in tactical communications", in proceedings of the ieee international conference on communications icc, budapest, 2013, pp. 4020–4024. [9] s. amuru and r. m. buehrer, "optimal jamming strategies in digital communications / impact of modulation", in proceedings of the ieee global communications conference (globecom), 2014, pp. 1619–1624. [10] s. amuru and r. m. buehrer, "optimal jamming against digital modulation", ieee trans. inf. forensics secur., vol. 10, no. 10, pp. 2212–2224, 2015. [11] j. mietzner, p. nickel, a. meusling, p. loos and g. bauch, "responsive communications jamming against radio-controlled improvised explosive devices", ieee commun. mag., vol. 50, no. 10, pp. 38–46, 2012. [12] m. tanatwy, "responsive communication jamming detector with noise power fluctuation using cognitive radio", int. j. innovative res. comput. commun. eng., vol. 2, no. 10, pp. 5967–5973, 2014. [13] t. trump and i. müürsepp, "detection speed of responsive communication jamming detectors, recent advances in telecommunications and circuits", in proceedings of the 2nd international conference on circuits, systems, communications, computers and applications, dubrovnik, 2013, pp. 149–154. [14] m. wilhelm, i. martinović, j. schmitt and v. lenders, "reactive jamming in wireless networks: how realistic is the threat?", in proceedings of the 4th acm conference on wireless network security (wisec '11), acm, hamburg, 2011, pp. 47–52. [15] g. evans, "a new weapon in the fight against rcieds, army technology", august 2015, https://www.army-technology.com/features/featurea-new-weapon-in-the-fight-against-rcieds-4647155/. [16] selena electronics, rss intelligent reactive stationary jammer and rsv vehicle reactive jammer. in electronics warfare systems: jamming solution, 2015. [17] m. mileusnić, p. petrović, a. lebl and b. pavić, "comparison of rcied activation responsive and active jamming reliability", in proceedings of the 6th international conference icetran 2019. srebrno jezero, 2019, pp. 988–993, awarded as the best paper in the section of telecommunications. [18] m. mileusnić, p. petrović, v. kosjer, a. lebl and b. pavić, "reliability analysis of different rcied activation signal responsive jamming techniques and their comparison to active jamming", fu electr. energ., vol. 33, no. 3, pp. 459–476, 2020. [19] a. gulyás, "the radio controlled improvised explosive device (rcied) threat in afghanistan", aarms, vol. 12, no. 1, pp. 1–11, 2013. [20] oss net, survey of rcieds southeast asia – feb 2003-oct 2005. oss southeast asia division, 2005. [21] f. e. idachaba, "algorithm for source mobile identification and deactivation in sms triggered improvised explosive devices", procedia eng., vol. 78, pp. 96-101, 2014. [22] stratign, "radio jammers", https://www.stratign.com/radio-jammers/. [23] security & counterintelligence group llc, "lightning: rcied jamming system – vehicle installed", https://scgroup-ltd.com/lightning/. [24] j. magiera, "wideband signal generation for jamming radio-controlled improvised explosive devices", in proceedings of the 41st international conference on telecommunications and signal processing (tsp). athens, 2018, pp. 1–4. https://www.army-technology.com/features/featurea-new-weapon-in-the-fight-against-rcieds-4647155/ https://www.stratign.com/radio-jammers/ https://scgroup-ltd.com/lightning/ comb jamming as a strategy for rcied activation prevention 419 [25] m. e. belkin, a. alyoshin, d. fofanov and a. s. sigov, "studying microwave-photonics design principle of a responsive jammer for radio-controlled explosive devices", tech. phys. lett., vol. 46, no. 11, pp. 1132–1135, 2020. [26] m. e. belkin, l. zhukov and n. smirnov, "devising an optimal time-delay circuit configuration for a microwave-photonics-based radio communication jammer", in proceedings of the 29th telecommunications forum (telfor), belgrade, 2021, pp. 440–443. [27] p. petrović and m. šunjevarić, "radio surveillance and jamming systems and techniques", trends in telecommunications, pp. 17.1.-17.22., belgrade, november 1988, (p. petrović, m. šunjevarić, “savremeni sistemi i tehnike za radio-izviđanje i ometanje”, pravci razvoja telekomunikacija, str. 17.117.22, beograd, novembar 1988). [28] iritel high frequency (hf) radio surveillance and jamming system, chapter in the book m. streetly, jane’s radar and electronic warfare systems. ihs global limited, 2011. [29] iritel very/ultra high frequency (v/uhf) radio surveillance and jamming system, chapter in the book m. streetly, jane’s radar and electronic warfare systems. ihs global limited, 2011. [30] m. mileusnić, p. petrović, b. pavić, v. marinković-nedelicki, j. glišović, a. lebl and i. marjanović, "the radio jammer against remote controlled improvised explosive devices", in proceedings of the 25th telecommunications forum (telfor), belgrade, 2017, pp. 151–154. [31] m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić and a. lebl, "analysis of jamming successfulness against rcied activation", in proceedings of the 5th international conference icetran 2018. palić, 2018, pp. 1206–1211, paper awarded as the best one in the section of telecommunications. [32] m. mileusnić, b. pavić, v. marinković-nedelicki, p. petrović, d. mitić and a. lebl, "analysis of jamming successfulness against rcied activation with the emphasis on sweep jamming", fu electron. energ., vol. 32, no. 2, pp. 211–229, 2019. [33] v. marinković-nedelicki, a. lebl, m. mileusnić, p. petrović and b. pavić, "ber calculation for sweep jamming of mpsk modulated rcied activation message signals", in proceedings of the 18th international symposium "infoteh jahorina 2019". jahorina, 2019, pp. 1–6. [34] m. mileusnić, p. petrović, b. pavić, v. marinković-nedelicki, v. matić and a. lebl, "jamming of mpsk modulated messages for rcied activation", in proceedings of the 8th international scientific conference on defensive technologies oteh, belgrade, 2018. [35] v. marinković-nedelicki, a. lebl, m. mileusnić and p. petrović, "combined jamming in rcied activation prevention", in proceedings of the 19th international symposium “infoteh jahorina 2020”. jahorina, 2020, pp. 1–6. [36] a. lebl, m. mileusnić, b. pavić, v. marinković-nedelicki and p. petrović, "programmable generator of pseudo-white noise for jamming applications", in proceedings of the 27th telecommunications forum (telfor). belgrade, 2019, pp. 1–4. [37] p. petrović, n. remenski, p. jovanović, v. tadić, b. pavić, m. mileusnić and b. mišković, wrj 2004 wideband radio jammer against rcieds. tehničko rešenje – novi proizvod na projektu tehnološkog razvoja tr32051 pod nazivom razvoj i realizacija naredne generacije sistema, uređaja i softvera na bazi softverskog radija za radio i radarske mreže, http://www.iritel.com/images/pdf/wrj2004-e.pdf, 2011. [38] n. remenski, b. pavić, p. petrović, m. mileusnić and v. marinković-nedelicki, integrisana radiooprema za zaštitu prostora od mobilnih veza (treća generacija radio-opreme). tehničko rešenje – novi proizvod s oznakom cj-1p na projektu tehnološkog razvoja tr-11030 razvoj i realizacija nove generacije softvera, hardvera i usluga na bazi softverskog radija za namenske aplikacije, http://www.iritel.com/images/pdf/cj-1p-e.pdf,, 2010 (also published in the book m. streetly, jane’s radar and electronic warfare systems.. ihs global limited, 2011). prva generacija radio-opreme s oznakom cj-1 je realizovana na projektu tehnološkog razvoja tr6149b, 2006. [39] p. petrović, m. mileusnić, b. pavić, v. tadić and v. marinković-nedelicki, razvoj nove generacije sistema za radio-izviđanje i ometanje u vf i vvf/uvf opsegu. tehničko rešenje u okviru projekta 10 m 06, ministarstvo za nauku i tehnologiju srbije, fond za naučni razvoj, 1997-2000. [40] p. petrović, generator of jamming signals gemos. technical solution, 1990. [41] p. petrović, development of new generation of gemos devices and signal classifier based on dsp technology. technical solution, 1999. [42] a. lebl, m. mileusnić and j. radivojević, "combined and comb rcied activation messages jamming – two different strategies with similar names", sci. tech. rev., vol. 70, no. 1, pp. 21–28, 2020. [43] b. a. black, on the generation of waveforms having comb-shaped spectra. nrl memorandum report 619, naval research laboratory, may 1988. [44] r. e. stoddard, multi-band jammer. patent no. us7697885 b2, 2010, pp. 1–7. http://www.iritel.com/images/pdf/wrj2004-e.pdf http://www.iritel.com/images/pdf/cj-1p-e.pdf 420 j. radivojević, m. mileusnić, a. lebl, v. marinković-nedelicki [45] x. song, x. wang, z. dong, x. zhao and x. feng, "pseudo-random sequence correlation identification parameters and anti-noise performance", energies, vol. 2018, no. 11, pp. 1–18, 2018. [46] m. r. frater and m. ryan, electronic warfare for the digitized battlefield. artech house inc., 2001. [47] v. chamola, p. kotesh, a. agarwal, naren, n. gupta and m. guizani, "a comprehensive review of unmanned aerial vehicle attacks and neutralization techniques", ad hoc networks, vol. 111, p. 102324, 2021, [48] h.-b. kil, j.-s. lee and e.-r. jeong, "analysis of frequency hopping signals in commercial drones", int. j. pure appl. math., vol. 118, no. 19, pp. 2015–2024, 2018. [49] b. m. todorović and v. d. orlić, "direct sequence spread spectrum scheme for an unmanned aerial vehicle ppm control signal protection”, ieee commun. lett., vol 13, no. 10, pp. 727–729, 2009. 12696 facta universitatis series: electronics and energetics vol. 37, no 4, december 2024, pp. 687 – 701 https://doi.org/10.2298/fuee2404687v © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper machine learning assisted s11 prediction for a slotted square patch antenna in 5.8 ghz wlan band doshant verma1, pinku ranjan2, alka verma3, pankaj kumar goswami4, neeraj kaushik5 1,3,4,5department of electronics & communication engineering, teerthanker mahaveer university, moradabad, india 2department of electrical and electronics engineering, abvindian institute of information technology and management, gwalior (mp), india orcid ids: doshant verma https://orcid.org/0009-0000-3723-3412 pinku ranjan https://orcid.org/0000-0002-1422-5943 alka verma https://orcid.org/0000-0002-0726-2017 pankaj kumar goswami https://orcid.org/0000-0002-1066-747x neeraj kaushik https://orcid.org/0000-0002-0990-4183 abstract. this article explores machine learning techniques, specifically artificial neural networks (ann), support vector machines (svm), and gaussian process regression (gpr), to predict the s11 parameter of a slotted square patch antenna optimized for wireless local area network (wlan) operation between 5.6 ghz and 5.85 ghz. the antenna, measuring 30x30x1.6 mm³ and centered at 5.725 ghz, features a coaxial probe feed design with a circular slot within the square patch to enhance bandwidth. these ml methods demonstrate superior efficiency compared to traditional simulation tools, enabling robust exploration of design configurations and accurate prediction of the antenna's electrical and physical characteristics. notably, gaussian process regression (gpr) consistently reveal lower mean squared error (mse) and higher r-squared (r²) values than ann and svm, suggesting superior accuracy in modeling the antenna's performance metrics. key words: machine learning, mean square error, s11, bandwidth 1. introduction machine learning (ml) has achieved huge attention for its capability to automate tasks and provide deep insights across diverse scientific and engineering disciplines. while still developing, ml has notably impacted several industries, including antenna design and optimization. ml has brought forward innovative methods that enhance efficiency, adaptability, and performance in antenna systems. traditionally, antenna design was heavily received may 02, 2024; revised july 04, 2024, august 16, 2024 and august 31, 2024; accepted september 09, 2024 corresponding author: pinku ranjan department of electrical and electronics engineering, abvindian institute of information technology and management, gwalior (m.p.), india e-mail: pinkuranjan@iiitm.ac.in https://orcid.org/0009-0000-3723-3412 https://orcid.org/0000-0002-1422-5943 https://orcid.org/0000-0002-0726-2017 https://orcid.org/0000-0002-1066-747x https://orcid.org/0000-0002-0990-4183 mailto:pinkuranjan@iiitm.ac.in 688 d verma, p ranjan, a verma, p k goswami, n kaushik reliant on complex mathematical models and precise parameter adjustments to achieve optimal performance. this traditional approach involved several steps, including defining the antenna shape and tuning parameters using simulation tools, which, although accurate, required considerable manual effort and iterations. on the other hand, ml techniques streamline the prediction and optimization of antenna parameters, making the process much faster and simpler compared to traditional simulation tools. these methods are remarkably favorable for handling complex antenna designs and high-dimensional parameter spaces. the effectiveness of ml methods [1-2] is affected by factors such as the complexity of the design, the optimization algorithm used, and the level of automation in the ml models. by integrating simulation tools with ml methods, a more comprehensive and efficient approach to antenna optimization can be achieved, improving the overall design evaluation process. this combined approach leverages the strengths of both methodologies, resulting in a more rapid and effective optimization workflow [3-4]. in [5], for analyzing the radiation pattern and estimating antenna’s resonant frequency of patch antenna, tunnel-built multi-slot and hole-coupled patch antenna was designed with implementation of artificial neural network (ann) followed by genetic algorithm(ga). it predicted that results of ga-coupled a ann matched with theoretical and experimental results. in [6], with the implementation of support vector regression, a rectangular patch antenna was optimized and when compared to ann showed high computational competence. in [7], array antenna was suggested and it was observed that by employing support vector machines (svms) with a gaussian kernel was more proficient at designing antennas with exceptional precision. in [8], the accurate prediction of resonant frequencies for e-shaped compact microstrip antennas (ecmas) was achieved using two robust techniques, namely the adaptive neuro-fuzzy inference system (anfis) and support vector machine (svm). the antenna was designed to operate within the uhf band. in [9], a heuristic optimization algorithm called the fruit fly optimization algorithm (foa) was proposed and applied in array factor synthesis and horn antenna design. while its utilization for optimizing antenna designs has been limited, it has shown promise in the synthesis of array factor analytical functions. in [10], a machine learning-based technique for optimizing antennas and estimating parameters efficiently was introduced. the multi-stage collaborative machine learning model demonstrated exceptional results by combining minimal normalized root mean squared error values with reduced computational time. in [11] gaussian process regression (gpr) was employed to optimize various parameters for a multiband microstrip antenna. slot loading was successfully incorporated to reduce the overall size of the antenna. in [12], a compact msa with dimensions 33x33mm² using gpr covered a frequency range of 0.48 ghz–7.84 ghz. the study explored dependencies related to the antenna's resonant frequency, including material properties, electrical characteristics, the presence of a slot, and patch dimensions. in [13], a miniaturized monopole antenna with a band-notched feature and coplanar feeding was designed and optimized using machine learning (ml) algorithms. the antenna exhibited stable radiation characteristics suitable for ultrawideband (uwb) applications, and among the ml algorithms used, k-nearest neighbor (knn) stood out for its excellent prediction accuracy. in [14] a model for antenna classification using fuzzy inference systems (fis) was introduced with a classification model employing decision trees (dt) achieved an impressive accuracy rate of 99%. furthermore, a geometric parameter estimation model using fis delivered a mean absolute percentage error (mape) of under 5.8%. machine learning assisted s11 prediction for a slotted square patch antenna in ... 689 this paper extensively explores machine learning techniques including svm, ann, and gpr to analyze the performance of a slotted square patch antenna by predicting the s11 parameter. operating within the 5.6 ghz to 5.85 ghz band, the antenna is particularly suitable for ieee 802.11a (5.725 ghz ∼ 5.825 ghz) applications. for obtaining the dataset, the proposed antenna was designed by employing high frequency simulator structure (hfss vs.19) and later on the above dataset was used for training and testing the ml models. section 2 provides a theoretical background on svm, ann, and gpr. section 3 presents both simulated and fabricated models of the suggested antenna, offering insights into simulated and measured results. in section 4, the effectiveness of svm, ann, and gpr in predicting the s11 plot is discussed, evaluated using r-squared scores (r2) and mean squared error (mse). 2. background machine learning techniques such as artificial neural networks (ann), support vector machines (svm), and gaussian process regression (gpr) offer substantial benefits over traditional tools like high frequency simulator structure (hfss), computer simulation technology (cst) etc., especially in their predictive capabilities. these ml methods excel in quickly processing large datasets, detecting patterns, and providing accurate predictions of antenna performance metrics like s11. in contrast, traditional simulation tools typically require more time-consuming iterative processes to achieve similar results. 2.1. artificial neural networks (ann) artificial neural networks have demonstrated to be versatile tools with applications spanning across diverse domains. their ability to learn from data, recognize complex patterns, and formulate predictions makes them a foundational technology in the domain of machine learning. an ann comprises of interconnected neurons organized into layer, and by adjusting weights and biases in the connections between these neurons information is processed as depicted in figure 1. in this structure, signals denoted as x1 to xn originate from signal sources or other neurons, where wi represents the weight for the ith connection, and θ serves as the threshold (commonly referred to as bias). the relation of input and output [15-17] is related as depicted by equation 1. 𝑦 = 𝑓(∑(𝑤𝑖 ∗ 𝑥𝑖 ) θ) (1) here, y is the neuron output, wi links to the weight connected to the ith linking in the neural network, xi is the ith point inside the input vector, f relates to activation function, and θ denote neuron threshold value. 2.2. support vector machines (svm) support vector machine (svm) is a supervised machine learning algorithm designed for both classification and regression tasks. the key aim is to reach peak margin, indicating the distance joining the hyperplane and the nearby support vectors starting in each class. the relationships (linear and non-linear) in data are well managed by svm [18-19], eased by the use of kernel functions. recognized for robustness and excellent generalization to new, unseen data, svms have garnered widespread application across diverse domains such as image classification, text classification, and bioinformatics, solidifying their status as a versatile cornerstone in the realm of machine learning. 690 d verma, p ranjan, a verma, p k goswami, n kaushik consider an svm model, with the input vector xi and the corresponding desired value yi from the training data set {(𝑥𝑖 , 𝑦𝑖 )}𝑖=1 𝑃 where p is the entire number of data patterns. support vector regression (svr), a variant of svm for regression, defines the approximation function f (x) as in equation 2. f (x) = ⟨w, d(x) ⟩ + b (2) f(x) is a non-linear mapping vector that transforms the input variable 𝑥i into a highdimensional space. the terms w and 𝑏 represent the weight vector and bias, respectively, with ⟨⋅,⋅⟩ denoting the inner product. to build a non-linear machine, a non-linear mapping vector is created to transform the data into a feature space. then, a linear model is constructed in this high-dimensional space to perform regression. the weight vectors and biases are determined by minimizing the regression risk function [8] as illustrated in equation 3. rreg =c∑ 𝐿𝑖 𝑃 𝑖=1 (𝑥𝑖𝑦𝑖 , 𝑓(𝑥𝑖)) + 1 2 ‖𝑤‖2 (3) where c represents the regularization parameter, determining the tradeoff between the empirical loss function and model complexity. li(xi, yi, 𝑓(𝑥𝑖)) represents the epsilion sensitive loss function, and 1 2 ‖𝑤‖2characterizes the modeling complexity. 2.3. gaussian process regression (gpr) gaussian process regression (gpr) serves as a probabilistic approach in machine learning tailored for regression tasks. diverging from conventional regression models that yield a single predicted value, gpr distinguishes itself by furnishing a distribution of potential outcomes, thereby supplying valuable uncertainty estimates [20-21]. it is an effective method for performing dynamic inference, offering precise function approximation in highdimensional spaces based on given datasets, gpr leverages a non-parametric bayesian approach to address regression problems, using bayesian inference to portray complex relationships between inputs and outputs. the general formulation for gpr, rooted in bayesian analysis, is expressed as depicted by equation 4. y=f(x)+ϵ (4) here, f represents the function value, 𝑦 is the observed target value, and ϵ denotes additive noise, which is normally distributed with a mean of zero and a variance of σ𝑛 2 in matrix form, this can be written as shown below: y = xtw + ϵ (5) where xt is the input vector and w represents the vector of weights (parameters) of the linear model. the weight vector w follows a gaussian prior with covariance matrix σ p is given by equation 6. w∼n(0,σ p )xt (6) the bayesian linear model makes inferences based on the posterior distribution over the weights, determined by bayes' theorem which are predicted by equation 7 and 8. posterior = likelihood x prior marginal likelihood (7) p(w׀y, x) = 𝑝(𝑦׀𝑥,𝑤)𝑝(𝑤) 𝑝(𝑦׀𝑋) (8) machine learning assisted s11 prediction for a slotted square patch antenna in ... 691 3. proposed antenna 3.1. antenna structure for this study a slotted square patch antenna is simulated using high frequency simulator structure (hfss vs.19) software with dimensions lp and wp is constructed on an fr4 substrate of height h and is excited using a coaxial probe having impedance of 50ω. figures 1(a)–1(c) show the top-view, bottom-view, and side-view of the proposed antenna, respectively. to enhance the performance parameters of the square patch antenna, a circular slot with a radius rc is incorporated into the radiating patch. the position of circular slot and coaxial probe is optimized to improve the functioning of the patch antenna by broadening its bandwidth and for achieving better impedance matching. table 1 provides the various dimensions of the patch antenna, and figure 2 displays the fabricated prototype model. table 1 parameters of the proposed antenna model ls ws lp wp rc x y substrate patch circular slot with center at (xc,yc,zc) x yground plane lg wg coaxial cable at (xf, yf) (a) (b) (c) fig. 1 proposed antenna geometry. (a) top-view (b) bottom-view (c) side-view parameters values (mm) length of ground plane (lg) 30 width of ground plane (wg) 30 length of substrate (ls) 30 width of substrate (ws) 30 patch length (lp) 11.1 patch width (wp) 11.1 circular slot radius (rc) 2 position of coaxial probe in x-axis (xf) 0 position of coaxial probe in y-axis (yf) position of circular slot on xy plane (xc, yc, zc) -2 (2,2,1.6) 692 d verma, p ranjan, a verma, p k goswami, n kaushik figure 2 illustrate the fabricated prototype of the antenna, with the results of the antenna being measured with the help of vector network analyzer. (a) (b) fig. 2 fabricated model of proposed antenna (a) top view (b) bottom view 3.2. analysis of simulated and measured results figure 3 presents a detailed comparison of the simulated and measured s11 of the antenna across frequencies, showing that the proposed antenna achieves an impedance bandwidth from 5.6 ghz to 5.85 ghz. figure 4 analyzes the gain versus frequency, indicating a peak gain of 4.2dbi. the strong agreement between measured and simulated results, with minor differences due to fabrication and connection losses, is noteworthy. figure 5 illustrates the simulated radiation patterns of the proposed antenna in both the eplane and h-plane at 5.79 ghz. 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -25 -20 -15 -10 -5 0 s 1 1 (d b ) frequency(ghz) simulated result measured result fig. 3 s11 versus frequency (simulated, measured) of proposed antenna machine learning assisted s11 prediction for a slotted square patch antenna in ... 693 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -4 -2 0 2 4 6 g a in ( d b i) frequency(ghz) simulated result measured result fig. 4 gain versus frequency (simulated and measured) of proposed antenna -30 -25 -20 -15 -10 -5 0 0 30 60 90 120 150 180 210 240 270 300 330 -30 -25 -20 -15 -10 -5 0 simulated measured (a) 0 30 60 90 120 150 180 210 240 270 300 330 -50 -40 -30 -20 -10 0 -50 -40 -30 -20 -10 0 simulated measured (b) fig. 5 radiation pattern (simulated and measured) at 5.79 ghz of the proposed antenna 694 d verma, p ranjan, a verma, p k goswami, n kaushik 4. implementaion and discussion using ml techniques this section throws insights about machine learning algorithms being employed to predict s11 of slotted patch antenna. initially, the dataset is loaded and then divided into a training set (80%) and a test set (20%), following standard practices. the training set is employed to train three ml models (ann, svm,gpr) with various parameters. once the model is trained, predictions are made using the test set. finally, the mean squared error (mse) and the r-squared (r²) score are calculated to assess the model's accuracy by comparing the predicted results with the actual data. 4.1. data set the dataset used for prediction was obtained by designing the proposed antenna using hfss simulator in which the variation of s11 with frequency in the range of 4 ghz to 10 ghz was observed. the performance parameters of the envisioned antenna are subject to analysis across various slot size (rc), patch length (lp), feed position in y direction (yf) and ground plane length(lg) and its width (wg) and their effect on s11 is observed. in total 14700 records was collected which comprised of 2100 rows and 7 columns. the dataset include the independent features (f, lp, lg, wg, rc, yf) and the corresponding s11 values each one of the 2,100 rows represents a distinct combination of the independent parameters along with the corresponding s11 values across the range of frequencies. the dataset comprised of six independent variables (f, lp, lg, wg, rc, yf) forming the first six columns, with s11 as the dependent variable in the last column. the independent variables were sampled across the relevant range during simulations as depicted in table 2 to capture the s11 behavior as the independent features (f, lp, lg, wg, rc, yf) and the corresponding s11 values.are generated utilizing the high frequency structural simulator (hfss vs.19). table 2 sampling strategies parameters range step size total data samples length of patch (lp) 11.0 mm≤ lp≤11.2 mm 0.1 mm 2100 with 80% on training and 20% on testing length of ground plane (lg) 27.0 mm≤lg≤32.0 mm 1.0 mm width of ground plane (wg) 27.0 mm≤lg≤32.0 mm 1.0 mm radius of circular slot (rc) 1.0 mm≤rs≤4.0 mm 1.0 mm feed distance in y-axis direction (yf) -1≤rf≤-4 1.0 mm frequency (f) 4 ghz≤f≤10 ghz 0.06 ghz 4.2. preprocessing and sampling of data the dataset generated from the high-frequency structure simulator (hfss) required initial preprocessing to ensure it was structured correctly for machine learning applications. this involved organizing the dataset so that each data sample occupied a row, with each feature represented in its own column. the dataset included six independent features— frequency (f), length of patch(lp), length of ground plane (l)g, width of ground plane (wg), radius of circular slot (𝑟𝑐)and feed distance in the y-axis y with the s11 parameter as the dependent variable in the seventh column. following preprocessing, the data was split into training and testing sets. specifically, 80% of the data was allocated for training machine learning assisted s11 prediction for a slotted square patch antenna in ... 695 the model, while the remaining 20% was set aside for testing. this split is crucial for evaluating the model's performance, as testing helps determine how well the model can generalize to new, unseen data [22-23]. the testing phase also plays a significant role in identifying issues such as overfitting or underfitting, which may necessitate exploring alternative models to achieve better results. figure 6 illustrates the steps taken during the preprocessing and sampling stages of the dataset. training dataset input dataset test dataset machine learning model evaluate best modelnew data prediction training dataset 20%80% apply trained model and predict apply machine learning model evaluate accuracy using test data if accuracy is not good, apply another model fig. 6 basic flowchart of implementation 4.3. training of svm, ann, and gpr algorithm three machine learning algorithms -svm, ann, and gpr are trained on the dataset to find the relationship between antenna parameters and performance metrics. after being trained, these models can be deployed for predicting the performance of various antenna configurations. the architecture of above three techniques along with their s11 prediction are illustrated in this section. (a) ann architecture input layer output layer hidden layer target s11 lp lg wg rc yf f fig. 7 ann architecture 696 d verma, p ranjan, a verma, p k goswami, n kaushik figure 7 highlights an artificial neural network (ann) model designed to predict s11 values from a set of input features. this model features an input layer with 6 attributes: frequency, lp, ls, lw, yf, and r1. it includes one hidden layer, consisting of 128 neurons activated by the rectified linear unit (relu) function. the output layer is a solitary neuron tailored for regression tasks, specifically predicting s11 values. the model’s performance was evaluated employing mean squared error (mse) and the r-squared score (r²). while no specific targets for mse or r² were set, the objective was to achieve a low mse and a high r², reflecting improved performance. training utilized the adam optimizer with a learning rate of 0.001, and the mse was adopted as the loss function. the model underwent training for 500 epochs, using default batch size settings provided by keras. the training process began with data loading and initial examination. data was imported from a csv file, with any extraneous whitespace removed from column names. the dataset was split into input features (x) and target values (y), and then divided into training (80%) and testing (20%) subsets. the standard scaler was applied to normalize both features and target values. the ann was developed using the keras sequential api, configured with the adam optimizer and mse loss function, and trained on the normalized training data. post-training, the model's effectiveness was assessed on the test set using mse and r² metrics. furthermore, the predicted s11 values were plotted against the frequency, as depicted in figure 8. fig. 8 s11 versus frequency (actual and predicted) using ann model (b) svm architecture support vector machine (svm) is basically deployed for classification issues, whereas the support vector regression (svr) is a type of svm and it adapts the svm concept to predict continuous values rather than discrete class labels. the svm model's architecture as shown in figure 9 featured a svr including a radial basis function (rbf) kernel. the desired modeling accuracy was evaluated using mean squared error (mse) and r-squared score (r²) with aim on minimizing mse while maximizing r². gridsearch cv was employed for hyperparameter tuning, searching across a specified range for parameters c, gamma, and epsilon. an 11-fold cross-validation ensured robust model evaluation and avoided overfitting. data preprocessing involved loading data from a csv file, extracting machine learning assisted s11 prediction for a slotted square patch antenna in ... 697 features, and the s11 values as the target variable. the data was normalized using standardscaler. the model's finest configuration was chosen based on the lowest mse obtained during cross-validation. post-training, the model's functioning was evaluated using mse and r² metrics. these metrics were saved to a csv file, and a plot comparing actual and predicted s11 values against frequency was generated as depicted in figure 10. the entire process leveraged python libraries such as pandas, numpy, matplotlib, and scikitlearn, with careful attention to reproducibility by setting a random seed. this comprehensive approach ensured a well-tuned and accurately evaluated svr model. x1[lp] s11 x2[lg] x3 [wg] x4 [rc] x5 [yf] x6 [f] k1(x1,x) k2(x2,x) k3(x3,x) k4(x4,x) k5(x5,x) k6(x6,x) y1α1 y2α2 y3α3 y4α4 y5α5 y6α6 bias fig. 9 svm architecture fig.10 s11 versus frequency (actual and predicted) using svm model (c) gpr architecture gaussian process regression (gpr) model as illustrated in figure 11is employed to predict s11, which is a measure of reflection coefficient in antenna design, based on model input features such as frequency, lp, ls, lw, yf, and r1. after training, the model predicts 698 d verma, p ranjan, a verma, p k goswami, n kaushik s11 values for given frequencies, allowing for accurate characterization and optimization of antenna performance. fig. 11 gpr model the desired modeling accuracy was evaluated using mse and r², with the goal of achieving a low mse and a high r², indicating better performance. the gpr model utilized a combination of a rational quadratic kernel and a white kernel, with hyperparameters such as length scale set to 1.0, alpha to 0.5, and noise level to 0.1. the data preprocessing involved standardizing both the features and the target variable using standard scaler to ensure they have a mean of 0 and a standard deviation of 1, which helps in improving the model performance. from the dataset features were extracted along with the target variable. the training process included sorting the data by frequency, scaling the features and target variable, and fitting the gpr model on the scaled data. after training, mse and r² of the the model was evaluated, and the predictions were inverse-transformed to obtain the actual predicted values. the results were visualized by plotting the authentic and predicted s11 values against frequency as illustrated in figure 12. fig. 12 s11 versus frequency (actual and predicted) using gpr model (d) predicted results from ml models table 3 displays the r-square score and the mse value which are exploited to assess the performance of the machine learning model. r-square score gives the response of how good our model is in terms of accuracy. it is the amount of variation in the output dependent machine learning assisted s11 prediction for a slotted square patch antenna in ... 699 attribute that can be predicted based on the input independent variable as depicted in equation 9. r2 = 1 − ∑(𝑦𝑖−�̂�)2 ∑(𝑦𝑖−�̃�)2 (9) �̂� is the predicted output �̃� is the mean value of output mean squared error is measured as the average squared variation among predictions and actual observations as shown in equation 10. mse= 1 𝑁 ∑ 𝑒𝑜 2𝑁 𝑖=1 (10) where eo is output error given by difference in desired output and expected output table 3 different models r-square score and mean squared error s. no model r-square score mse 1. ann 0.92 0.05 2. svm 0.78 0.005 3. gpr 0.99 0.00003 table 3 indicates that gpr has better performance metrics as its mse is very low (0.00003) and the r square score being very high (0.99) in comparison to the other two model. this showcases that the prediction of gpr is the best. .figure 13 shows the plot of s11 variation with frequency as predicted by the gpr model, alongside the simulated and measured results. it is observed that the prediction of s11 plot by gpr matches to the simulated results. the machine learning models used in this study greatly decrease computation time compared to hfss simulations, as detailed in table 4. the table presents the time required to predict the s11 parameter over the frequency range of 4 ghz to 10 ghz for the optimized antenna parameters. 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -25 -20 -15 -10 -5 0 s 1 1 (d b ) frequency(ghz) hfss simulation machine learning (gpr) measured result fig. 13 s11 versus frequency (simulated, machine learning, measured) of proposed antenna 700 d verma, p ranjan, a verma, p k goswami, n kaushik the ml models outperform hfss in terms of speed, with gpr being the quickest, followed by ann and svm. the computation times reported in the manuscript were achieved on a system with the following hardware specifications: intel(r) core(tm) i58350u cpu, 4 cores, 7.8 gb ram, running windows version 11. table 4 comparison of computational time between hfss and ml models (ann, svm, gpr) s. no parameter hfss ann svm gpr 1. time 15mins 10 ms 100 ms 5ms 5. conclusion this paper introduces square patch antenna with a circular slot being designed using hfss. the optimized antenna design is not only theorized but also fabricated and rigorously tested, confirming its operational frequency range spanning from 5.6 to 5.85 ghz making it suitable for applicable for 5.8 ghz wlan band. the study also employs artificial neural network, support vector machine, and gaussian process regression to predict parameters, specifically focusing on the prediction of the s11 parameter. notably, gaussian process regression emerges as the algorithm providing the most accurate predictions. references [1] s ledesma, j ruiz-pinales, m garcia-hernandez, et al., "a hybrid method to design wire antennas: design and optimization of antennas using artificial intelligence", ieee antennas propag mag., vol. 57, no. 23, p. 32015. [2] p testolina, m lecci, m rebato, et al., "enabling simulation based optimization through machine learning: a case study on antenna design", arxiv preprint. 2019; 1908:11225. [3] hm el misilmani, t naous, sk. al khatib, "a review on the design and optimization of antennas using machine learning algorithms and techniques", int. j. rf microwave comput. aided eng., vol. 30, no. 10, p. e22356, 2020. [4] s ledesma, j ruiz-pinales, m garcia-hernandez, et al., "a hybrid method to design wire antennas: design and optimization of antennas using artificial intelligence", ieee antennas propag mag., vol. 57, pp. 23– 31, 2015. [5] d. k. neog, s. s. pattnaik, d. c. panda, s. devi, b. khuntia, m. & dutta, "design of a wideband microstrip antenna and the use of artificial neural networks in parameter calculation", ieee antennas and propagation magazine, vol. 47, no. 3, pp. 60–65, 2005. [6] m. moghaddasi and p. barjoei, "a heuristic artificial neural network design of resonant frequency of rectangular microstrip/patch antennas", in proceedings of the international conference on information and communicationtechnologies: from theory to applications, 2008, pp. 1–5. [7] z. zheng, x. chen, & k. huang, "application of support vector machines to the antenna design", international journal of rf and microwave computer-aided engineering, vol. 21, no. 1, pp. 85–90, 2010. [8] a. kayabasi & a. akdagli, "predicting the resonant frequency of e-shaped compact microstrip antennas by using anfis and svm", wireless personal communications, vol. 82, no. 3, pp. 1893–1906, 2015. [9] l. polo-lópez, j. córcoles, & j. ruiz-cruz, "antenna design by means of the fruit fly optimization algorithm", electronics, vol. 7, no. 1, 2018. [10] q. wu, h. wang, and w. hong, "multistage collaborative machine learning and its application toantenna modeling and optimization", ieee transactions on antennas and propagation, vol. 68, no. 5, pp. 3397– 3409, may 2020. [11] x-y zhang, y-b tian, x. zheng, "antenna optimization design based on deep gaussian process model", international journal of antennas and propagation, pp. 7–18, 2020. machine learning assisted s11 prediction for a slotted square patch antenna in ... 701 [12] k. sharma, & g. p. pandey, "efficient modelling of compact microstrip antenna using machine learning", aeu international journal of electronics and communications, vol. 135, p. 153739, 2021. [13] p. ranjan, a. maurya, h. gupta, s. yadav, a. sharma, "ultra-wideband cpw fed band-notched monopole antenna optimization using machine learning", progress in electromagnetics research m, vol. 108, pp. 27–38, 2022. [14] r. ramasamy and m. anto bennet, "an efficient antenna parameters estimation using machinelearning algorithms", progress in electromagnetics research c, vol. 130, pp. 169–181, 2023 [15] t. sallam, a. b. abdel-rahman, m. alghoniemy, z. kawasaki, and t. ushio, "a neural-network-based beamformer for phased array weather radar", ieee trans. geosci. remote sens., vol. 54, no. 9, pp. 5095– 5104, september 2016. [16] zb wang and sj fang, "ann synthesis model of singlefeed corner truncated circularly polarized microstrip antenna with an air gap for wideband applications", international journal of antennas and propagation, pp. 1–7, 2014. [17] a. akdagli, a. toktas, a. kayabasi, & i. develi, "an application of artificial neural network to compute the resonant frequency of e-shaped compact microstrip antennas", journal of electrical engineeringelektrotechnicky casopis, vol. 64, no. 5, pp. 317–322, 2013. [18] j. l. rojo-alvarez, g. camps-valls, m. martınez-ramon, e. soria-olivas, a. navia-vazquez, and a. r. figueiras-vidal, "support vector machines framework for linear signal processing", signal processing, vol. 85, no. 12, pp. 2316–2326, 2005. [19] m. pastorino and a. randazzo, "a smart antenna system for direction of arrival estimation based on a support vector regression", ieee transactions on antennas and propagation, vol. 53, no. 7, pp. 2161– 2168, 2005. [20] tj santner, bj williams, w notz, bj williams, the design and analysis of computer experiments. vol 1. springer; 2003. [21] s. ruder, an overview of gradient descent optimization algorithms. arxiv preprint. 2016; 1609.04747. [22] q. wu, h. wang and w. hong, "multistage collaborative machine learning and its application to antenna modeling and optimization", ieee trans. on ant. and prop., vol. 68, no. 5, pp. 3397–3409, 2020. [23] a. srivastava, h. gupta, a.k. dwivedi, k.k.v. penmatsa, p. ranjan and a. sharma, "aperture coupled dielectric resonator antenna optimisation using machine learning techniques", aeu-intern. journal of elect. and com m., vol. 154, pp. 154302-1-154302-8, 2022. instruction facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 689 700 doi: 10.2298/fuee1604689d a novel analytical method for the selective multiplierless linear-phase 2d fir filter function  jelena r. djordjević-kozarov, vlastimir d. pavlović university of niš, faculty of electronic engineering, niš, serbia abstract. in this paper, a novel analytical method for new class of selective linear-phase two-dimensional (2d) finite impulse response (fir) filter functions generated by applying a new modified 2d christoffel–darboux formula for classical orthogonal chebyshev polynomials of the first and the second kind is proposed. fundamental research proposed in this paper is also illustrated by examples of 2d fir filter and adequate comparison with new class of multiplierless linear-phase 2d fir filter function given in the literature. key words: 2d fir filter function, multiplierless, linear-phase, frequency response analysis, chebyshev polynomials, hilbert transform 1. introduction successful applications of powerful orthogonal polynomials, in the filter theory, are well-known and described in [1]. a lot of problems in various scientific and technical areas have been solved applying the classical christoffel-darboux formula for all classic orthogonal polynomials. the new class of the explicit filter functions for continuous signals, generated by the classical christoffel-darboux formula for the classical jacobi orthogonal polynomials, is given in detail in [2]. design of the linear-phase fir filters for defined specifications is discussed in [3]. the grid density requirement for the design of fir filters, with a useful design rule, is presented in detail in [4]. in [5] the authors present the relationship between the accuracy and the frequency grid density in 2-d filter designs. a new formula for determining the frequency grid spacing is proposed. one-dimensional half-band linear-phase fir filter design approach is efficiently used in realization of 2d linear-phase fir filter [6]. the paper [7] describes the approach for the successful design of 2d fir filters with multipliers. moreover, 2d fir filters with nonstandard specifications are designed using transformation technique in [8, 9]. they are based on transformation of one-dimensional fir filters, as well as direct application of the approximation techniques in two dimensions. received october 13, 2015; received in revised form april 16, 2016 corresponding author: jelena r. djordjević-kozarov university of niš, faculty of electronic engineering, aleksandra medvedeva 14, serbia (email: jelena.djordjevic-kozarov@elfak.ni.ac.rs) 690 j. r. djordjević-kozarov, v. d. pavlović a simple recurrence formula for computing the impulse response coefficients of the sinc n fir filter, consisting of a cascade of n sinc filters, each of length m, is presented in [11]. the initial consideration for the synthesis of the 2d fir filter functions is given in a short paper [12]. proposed christoffel-darboux formula for four orthogonal polynomials on two equal finite intervals for powerfully generating filter functions is proposed. in [13] is described in detail the analytical method for the synthesis of the multiplierless linearphase 1d and 2d fir filter functions in an explicit form using chebyshev orthogonal polynomials of the first kind. in [14] is described an analytical method for the synthesis of the multiplierless linear-phase 2d fir filter functions in a compact form that can have the effect of hilbert transformer in the z2 domain. a novel analytical method for a new class of linear-phase 2d fir filter functions with a full effect of hilbert transformer in z1 and z2 domains is proposed in [15]. the main motivation for this research is the extreme property of christofell-darboux sum for the classical orthogonal polynomials that provides new results in the continuous domain, the domain of 1d z and 2d z domain. these results are written in explicit form and give a huge contribution to the filter theory. it should be emphasized that the multiplierless solutions are new solutions worthy of attention. there is no effect of the final quantization of filter coefficients because all the filter coefficients are equal per module. this paper presents further generalization of the previous research [4] in two dimensions. the proposed solution is a filter function in the z1 domain, and the hilbert transformer in the z2 domain, and with the solution from [14] constitutes the whole. an analytical method of the christoffel-darboux formula for the classical orthogonal chebyshev polynomials, of the first and the second kind, is proposed in this paper in an explicit form in continuous domain. also, the new class of the linear-phase 2d fir digital filters, generated by the proposed modified formula and by direct mapping from the continuous domain into 2d z domain, is given. in order to illustrate, the examples of the efficient design of the new class of selective linear-phase 2d fir filter functions are also given. 2. review of the 2d fir filter function multiplierless linear-phase 2d fir filter function with two free real parameters is considered in this paper. a linear-phase 2d fir filter of (m x m)-order is defined by 1 2 1 1 2 0 0 ( , , ) ( , , ) m m r k r k h m z z k h m r k z z       (1) where m is desired order of the filter, 1k is the real constant and ( , , )h m r k are the impulse response coefficients that are real numbers. squared filter frequency response, in absolute units, can be presented by 1 2 1 2 1 2 1( , , ) ( , , ) , for , 2 i j h m z z h m z z z e z e     (2) or 2 1 2 1 2 1 2( , , ) ( , , ) ( , , ) i j i j i j h m e e m e e h m e e         (3) alternatively in db, squared filter frequency response can be presented by a novel analytical method for the selective multiplierless linear-phase 2d fir filter function 691 1 2( ) 20 log ( , , ) i j a db h m e e    (4) 3. new class of two-dimensional linear phase multiplierless fir filter functions directly applying the formula proposed by eq. (a.8), the new class of non-causal twodimensional symmetric fir filter functions can be obtained as 1 1 1 1 1 1 1 1 1 1 1 1 1 2 1 2 1 1 1 1 1 1 11 2 2 2 2 2 2 1 2 sin 12 2 2 ( ) ( ) ( , , ) sin 12 2 2 ( ) ( ) m r z z z z z z t u r ri i h r h r h m z z k z z z z z z t u r rj j h r h r                                                                     (5) or 2 2 2 2 1 2 1 1 1 2 2(m, , ) [( ) ( )] 1 m r r r r r h z z ij k z z z z          (6) multiplying the eq. (6) with factor 2 2 1 2 n nz z  , the filter function can be generated as 2 2 2 2 2 2 2 2 1 2 1 1 1 2 2 1 ( , , ) [( ) ( )] m m r m r m r m r r h m z z ij k z z z z              (7) it is obvious from eq. (7) that the linear-phase fir filter contains no multipliers and has only adders. the frequency response, 1 2( , , ) i j h m e e   , can be defined as 1 2 ( 2 ) ( 2 ) 1 22 2 1 2 0 ( , , sin (2 ) sin (2 )) i m j m m i j r h m e e e e r r                 (8) and the magnitude characteristic is defined as 1 2 1 2 0 ( , , ) sin (2 ) sin (2 ) mi j r h m e e r r        (9) and the amplitude characteristic, 1 2(2 , , )a m   , is defined as 1 2 1 2 0 ( , , ) sin (2 ) sin (2 ) m r a m r r       (10) the linear-phase function, 1 2(2 , , )m   , can be defined as ( 2 ) ( 2 ) 1 22 2 1 2( , , ) i m j m e em             (11) 692 j. r. djordjević-kozarov, v. d. pavlović a filter function of k = 2r cascaded identical blocks can be written as (h(m, z1, z2)) 2r . if we propose that the filter function h(m, 2r, z1, z2) is performed as a product of three functions of successive orders 1m , m and 1m , than the form of the filter function can be given by: 2 1 2 1 2 1 2 1 2(2 , , , ) [ ( 1, , ) ( , , ) ( 1, , )] r h r m z z h m z z h m z z h m z z   (12) 4. examples of the new class of two-dimensional linear phase fir filter functions the proposed design algorithm, for original 2d fir filter function, has limitations in addition to the filter dimension (6mr x 6mr) and in addition to the value of two free real integer parameters 2r and m. this means that the linear-phase characteristic forms are limited. in table 1, for some low values of 2r and m, the form of linear-phase characteristics and type of filter functions are given. when 2r is an even number, the proposed filter function has filter properties in both domains. table 1 explicit form of the linear phase characteristics of the proposed fir filter for some low values of free integer parameters 2r and m 2r m 1 ( 4 ) 2( 4 ) 2 2 1 22( , , , ) j mr i mr m r e e             type 4 4 ( 32 ) ( 32 ) 1 2 1 2(4,4, , ) i j e e             z1 filter z2 filter 4 5 40 401 2 1 2(5,4, , ) i i j j e e              z1 filter z2 filter 4 6 ( 48 ) ( 48 ) 1 2 1 2(6,4, , ) i j e e             z1 filter z2 filter 4 7 ( 56 )( 56 )1 2 1 2(7,4, , ) ji e e           z1 filter z2 filter 4 8 ( 64 )( 64 )1 2 1 2(8,4, , ) ji e e           z1 filter z2 filter 4 9 ( 72 ) ( 72 )1 2 1 2(9,4, , ) i j e e             z1 filter z2 filter 4 10 ( 80 )( 80 )1 2 1 2(10,4, , ) ji e e           z1 filter z2 filter 4 11 ( 88 ) ( 88 )1 2 1 2(11,4, , ) i j e e             z1 filter z2 filter using the standard technique, the amplitude, magnitude and phase characteristics are obtained from eq. (7) for the numerical values 2r = 4 and m = 6, and detailed characteristics of the filter function 1 2( , , ,2 )h m zr z are given in the following figures. a novel analytical method for the selective multiplierless linear-phase 2d fir filter function 693 (a) (b) fig. 1 a) 3d plot of normalized amplitude characteristics of proposed 2d fir filter for 2r =4 and m=6; b) zoomed panel a) illustrated examples of pass-band and stop-band characteristics of the considered fir filter function for given values of attenuation, 1 2(2 , , , )a r m   , are shown in fig. 2. (a) (b) fig. 2 2d contour plot of normalized magnitude characteristics: a) shape of the pass-band with attenuation of 0.28 db for 2r =4 and m=6; b) shape of the stop-band with attenuation of 100 db for 2r =4 and m=6 fig. 3 shows the phase characteristic of the considered linear-phase multiplierless 2d fir filter function in the initial part, for the same values of the free integer parameters 2r and m, i.e., 2r = 4 and m = 6. 694 j. r. djordjević-kozarov, v. d. pavlović fig. 3 3-d plot of the phase characteristic of proposed 2d fir filter for 2r = 4 and m = 6 5. comparison in this part of the paper, the comparison of the proposed solution for the multiplierless linear-phase 2d fir filter functions and the solution described in [13] is discussed. for the same values of the real free parameters, m and 2r, and the same value of constant group delay we have considered the comparison of amplitude response characteristics and cut-off frequencies of the pass-band of filter and cut-off frequencies of the stop-band of filter. for the value of the free integer parameter 2r = 4, the paper described in [13] and this paper have the same filter property both in z1 and in z2 domain. for the same odd m = 6 we discussed the comparisons between the amplitude responce characteristics, as well as cut-off frequencies of the pass-band of filter with defined attenuation of 0,28 db and cutoff frequencies of the stop-band of filter with attenuation of 100 db. we correctly compare two examples of filter functions that have the same values of free real integer parameters, and thus the same form of linear-phase characteristics which is given in a compact explicit form in the next expression ( 48 ) ( 48 )1 22 2 1 2(6,4, , ) i j e e             (13) in fig. 4 are shown the amplitude response characteristics of 2d fir filter of the solution from [13] and the proposed solution, respectively, for free parameters 2r=4 and m=6. a novel analytical method for the selective multiplierless linear-phase 2d fir filter function 695 (a) (b) fig. 4 3d contour plot of amplitude response characteristics, review of the comparison between: a) solution from [13], and b) the proposed filter from eq. (10) fig. 5 shows zoomed forms of pass-bands of filters with attenuation of 0.28 db of the solution from [13] and the proposed solution, respectively, for parameters 2r=4 and m=6. (a) (b) fig. 5 2d contour plot of normalized magnitude characteristics, shape of the pass-band with attenuation of 0.28 db; review of the comparison between: a) solution from [13], and b) the proposed filter from (10) in fig. 6 are shown the stop-bands of filters with attenuation of 100 db of the solution generated by expressions from [13] and proposed solution, respectively. 696 j. r. djordjević-kozarov, v. d. pavlović (a) (b) fig. 6 2d contour plot of normalized magnitude characteristics, shape of the stop-band with attenuation of 100 db; review of the comparison between: a) solution from [13], and b) the proposed filter from (10) in table 2 and table 3 are given the values of the surface area of pass-band and stopband, respectively, of considered 2d fir filter function for different values of given maximal attenuation compared with 2d fir filter function given in [13]. results in table 3 are given in (%) in relation to a total area of the amplitude characteristic. table 2 normalized surface area of pass-band for proposed 2d fir filter function for given values of maximal attenuation compared with 2d fir filter function given in [13] 2r m passa (db) normalized surface area of the proposed filter function pass-band normalized surface area of the filter function pass-band proposed in [13] 4 6 0.28 24.3284219110-4 0.6779299310-4 table 3 normalized surface area of stop-band for proposed 2d fir filter function for given values of maximal attenuation compared with 2d fir filter function given in [13] 2r m stopa (db) normalized surface area of the proposed filter function stop-band (%) normalized surface area of the filter function stop-band proposed in [13] (%) 4 6 100 21.405425 34.789375 a novel analytical method for the selective multiplierless linear-phase 2d fir filter function 697 6. conslusion this paper presents an original approach to the multiplierless linear-phase 2d symmetric fir digital filter function synthesis, bringing the significant improvements in the filter theory. the new christoffel-darboux formula for classical orthogonal chebyshev polynomials of the first and the second kind is proposed in appendix of this paper. the presented formula can be used for successfully solving extremely complicated problems of the linear-phase 2d filter design, with high selectivity and high order. transition from the continuous domain into the 2d z domain is successfully presented. this new formula can be directly applied in generating 2d filter functions. all parasitic effects, such as gibbs phenomenon, are suppressed and there is no need for using multipliers. filters design by the proposed method can be applied in various areas, such as telecommunications, medicine, pharmacy, seismology, general localizations and diagnostics, where they can be of special interest. the illustrated examples of the 3d frequency responses and the corresponding 2d contour plots of the proposed linear-phase 2d fir filter are also presented. these examples illustrate the high advantages of the proposed approach and an efficient way of designing ultra-selective filters. the difference between capital research described in [13] and the proposed new classes of filter function for even and odd real value of the free parameter 2r, is following. formulae in the z domain proposed in this paper and in the papers [13] are highly sophisticated and written on the model of extreme properties of christoffel-darboux sum for the continuous classical orthogonal polynomials [3]-[5]. the proposed multiplierless filter functions do not have the problem of the final quantization of filter coefficients, and these solutions are still superior and still very useful for real-time and require a minimum area of integrated technology implementation. undesirable gibbs phenomenon, presented in the analog and in 1d digital filters, has been completely eliminated by the proposed solution. in many practical solutions that requires a minimum dissipation of dc power supply, this solution successfully realizes circuits without multipliers and without quasi multipliers. acknowledgement: the paper is a part of the research done within the project no. 32023, funded by the ministry of science of the republic of serbia. references [1] m. abramowitz, i. stegun, handbook on mathematical function, national bureau of standards, applied mathematics series, usa, 1964. [2] v. d. pavlović, “new class of filter functions generated directly by the modified christoffel–darboux formula for classical orthonormal jacobi polynomials, international journal of circuit theory and applications”, john wiley & sons, vol. 40, pp. 1059–1073, 2013. [3] s. n. hazra, m. s. reddy, “design of circularly symmetric low–pass two–dimensional fir digital filters using transformation”, ieee transactions on circuits and systems, vol. 33, no. 10, pp. 1022–1026, 1986. [4] r. h. yang, y. c. lim, “grid density for design of oneand two-dimensional fir filters”, electronics letters, vol. 27, no. 22, pp. 2053–2055, 1991. [5] s. h. low, y. c. lim, “frequency grid density for the design of 2-d fir filters”, electronics letters, vol. 32, no. 16, pp. 1460–1461, 1996. 698 j. r. djordjević-kozarov, v. d. pavlović [6] a. klouche-djedid, s. s. lawson, “simple design and realisation of linear phase 2d fir filters with diamond frequency support”, electron. letters, vol. 35, no. 14, pp. 1148–1150, 1999. [7] n. vijayakumar, k. m. m. prabhu, “two-dimensional fir compaction filter design”, iee proc., vis. image process, vol. 148, no. 3, pp. 173–181, 2001. [8] v. l. narayana murthy, a. makur, “design of some 2-d filters through the transformation technique”, iee proc., vis. image process, vol. 143, no. 3, pp. 184–190, 1996. [9] b. g. mertzios, a. n. venetsanopoulos, “fast block implementation of two-dimensional fir digital filters via the walsh–hadamard decomposition”, international journal of electronics, vol. 68, no. 6, pp. 991-1004, 1990. [10] s. k. mitra, digital signal processing. – the mcgraw–hill companies, new york, usa, 1998. [11] s. c. dutta roy, “impulse response of sincn fir filters”, ieee transactions on circuits and systems, vol. 53, no. 3, pp. 217–219, 2006. [12] d. g. ćirić, v. d. pavlović, “linear phase two-dimensional fir digital filter functions generated by applying christoffel-darboux formula for orthonormal polynomials”, elektronika ir elektrotechnika, vol. 4, pp. 39-42, 2012. [13] v.d. pavlović, n. doncov, d.g. ćirić, “1d and 2d economical fir filters generated by chebyshev polynomials of the first kind”, int. journal of electr., vol. 100, no. 11, pp. 1592-1619, 2013. [14] j.r. djordjevic-kozarov, v.d. pavlovic, “an analytical method for the multiplierless 2d fir filter functions and hilbert transform in z2 domain”, ieee trans. on circuits and systemsii: express briefs, vol. 60, no. 8, pp. 527-531, 2013. [15] v.d. pavlovic, j.r. djordjevic-kozarov, “ultra-selective spike multiplierless linear-phase twodimensional fir filter function with full hilbert transform effect”, iet circuits devices syst., vol. 8, no. 6, pp. 532–542, 2014. appendix 1. proposed mathematical background if 1( )ru x and 1( )ru y are two sets of the orthogonal chebyshev polynomials of the second kind [5], where x and y are real variables and r is the order of the continuous non-periodical polynomials on a finite interval 1 1x   and 1 1y   respectively, with regard to the nonnegative continuous weight functions, 1( )w x and 2 ( )w y , defined as 2 1( ) 1w x x  (a.1) and 2 2 1 ( ) 1 w y y   (a.2) then, for the orthogonal chebyshev polynomials of the first kind, tr(y), and the second kind, ur + 1(x), the following relations are valid 1 1 1 1 1 ( ) ( ) ( ) 0 ; , 0, 1, 2, 3,m kw x u x u x dx m k m k      (a.3) and 1 2 1 ( ) ( ) ( ) 0 ; , 0, 1, 2, 3,m kw y t y t y dy m k m k     (a.4) a novel analytical method for the selective multiplierless linear-phase 2d fir filter function 699 for the polynomial, tr(y), r-th order norm h2(r), is: 1 2 2 2 1 , 0 ( ) ( ) ( ( )) , 1,2,3, 2 r r h r w y t y dy r           (a.5) and for the polynomial um + 1(x), m-th order norm h1(m), is 1 2 1 1 1 1 ( ) ( ) ( ( )) , 1,2,3, 2 mh m w x u x dx m       (a.6) a novel analytical method for the linear phase two-dimensional symmetric fir digital filter functions generated by applying the modified christoffel-darboux formula with alternating sign. components of that sum are determined by multiplication of orthogonal classical chebyshev polynomials of the first and the second kind, with x and y as a real continual variables, ur+1(x), ur+1(y) and tr(x), tr(y), r = 1,2,...,n (where n is the order of the continual orthogonal polynomials), on the equal finite interval [1,1], is proposed in the following explicit form of the orthogonal components: or 1 1 1 1 2 1 2 ( ) ( ) ( ) ( ) ( , ) sin ( )sin ( ) ( ) ( ) ( ) ( ) n r r r r n r t x u x t y u y x y x y h r h r h r h r       (a.7) i. e. 2 1 1 1 2 ( , ) sin ( )sin ( ) ( ) ( ) ( ) ( ) n n r r r r r x y x y t x u x t y u y              (a.8) using the standard technique, the eq. (a.8) can be mapped into the new domains, analogue, s, and digital, z, [3, 4, 17-19]. thus, in the z1 domain for example, the following relations are always valid: 1 1 1 1 1 1 22 2 2 2 2 ( cos ) cos ( ) ( ) / 2 ( ) / 2 ( cos ) cos ( ) ( ) / 2 ( ) / 2 j k j k k k k j kj k k k k t x k e e z z t y k e e z z                        (a.9) where tk (x = cos 1) and tk (y = cos 2) are the orthogonal continuous chebyshev polynomials of the first kind, and 1 1 1 1 1 1 1 2 2 2 1 2 2 2 sin ( ) ( ) sin ( ) ( ) /(2 ) ( ) /(2 ) sin ( ) ( y) sin ( ) ( ) /(2 ) ( ) /(2 ) i k i k k k k j k j k k k k u x k e e i z z i u k e e j z z j                         (a.10) where uk+1 (x = cos 1) and uk+1 (y = cos 2) are the orthogonal continuous chebyshev polynomials of the second kind. as we can see, for odd k, e.g. k = 9, following eq. (a.12) and eq. (a.13) the orthogonal chebyshev polynomials tk (y) and uk+1 (x), respectively, becomes 700 j. r. djordjević-kozarov, v. d. pavlović 9 92 2 9 9 9 2 2 2( ) cos(9 ) ( ) / 2 ( ) / 2 j j t y e e z z          (a.11) and 9 91 1 9 9 1 10 1 1 1sin ( ) ( ) sin (9 ) ( ) / 2 ( ) / 2 i i u x e e z z           (a.12) facta universitatis series: electronics and energetics vol. 32, no 2, june 2019, pp. 249-265 https://doi.org/10.2298/fuee1902249c ewma statistics and fuzzy logic in function of network anomaly detection petar čisar 1 , sanja maravić čisar 2 1 university of criminal investigation and police studies, zemun-belgrade, serbia 2 subotica tech, deparment of informatics, subotica, serbia abstract. anomaly detection is used to monitor and capture traffic anomalies in network systems. many anomalies manifest in changes in the intensity of network events. because of the ability of ewma control chart to monitor the rate of occurrences of events based on their intensity, this statistic is appropriate for implementation in control limits based algorithms. the performance of standard ewma algorithm can be made more effective combining the logic of adaptive threshold algorithm and adequate application of fuzzy theory. this paper analyzes the theoretical possibility of applying ewma statistics and fuzzy logic to detect network anomalies. different aspects of fuzzy rules are discussed as well as different membership functions, trying to find the most adequate choice. it is shown that the introduction of fuzzy logic in standard ewma algorithm for anomaly detection opens the possibility of previous warning from a network attack. besides, fuzzy logic enables precise determination of degree of the risk. key words: network anomaly detection, ewma, fuzzy rules, membership functions, operators 1. introduction intrusion detection is an area of computer security that involves the detection of unwanted manipulations to computer networks. an intrusion detection system (ids) is required to detect all types of malicious network traffic and computer usage that cannot be detected by a conventional firewall (fig. 1). this security method is needed in today’s computing environment because it is impossible to keep pace with the current and potential threats and vulnerabilities in our computing systems. an ids may be categorized by its detection mechanism on: anomaly based, signature based or hybrid (uses both of previous technologies). received october 4, 2018; received in revised form january 15, 2019 corresponding author: petar ĉisar university of criminal investigation and police studies, cara dušana 196, 11080 zemun-belgrade, serbia (e-mail: petar.cisar@gmail.com) 250 p. ĉisar, s. maravić ĉisar fig. 1 ids elementary configuration [1] when the ids identifies intrusions as unusual behaviour that differs from the normal behaviour of the monitored system, this analysis strategy is called anomaly detection 2. the disadvantage of this method is the occurrence of a relatively large number of false alarms, i.e. network situations where the detection system indicates a non-existent attack. in order to reduce the appearance of false alarms, the measurement of the traffic activity is applied. the goal is to make a decision whether a network situation is attack or not. in order to make the correct decision, the behaviour profiles are defined: normal and abnormal profiles (simple thresholds (limit values) or complex statistical distributions). the false positive rate is considered one of the most important factors for performance evaluation of ids. anomaly detection learns a statistical or neural network model to figure out what is normal. the following techniques can use: bayesian statistics, neural networks, expert systems and statistical decision theory. a number of anomalies are seen in changes in the intensity of events occurring in computer networks. due to the ability of exponentially weighted moving average (ewma) control chart to supervise the event-occurrence rate on the basis of their intensity, this statistic can be implemented in control limits based algorithms. the effectiveness of the performance of standard ewma algorithm can be increased when one combines the logic of adaptive threshold algorithm and adequate application of fuzzy theory. fuzzy logic enables precise adjustment of degree of exceeding limit values (expressed in form of percentage). different aspects of fuzzy rules are described in this paper, including different membership functions, trying to define the most suitable choice. the aim of this paper is to show the theoretical opportunity and examine the possible way of implementing ewma statistics and fuzzy logic to detect network anomalies. ewma statistics and fuzzy approach are not new in analyzing and detecting network anomalies and intrusions. ye et al. [3] implemented chi square distance metric to measure the deviation of the observed activities from the forecast of normal activities. the results indicate that the chi square distance measure with the ewma forecasting provides better performance in intrusion detection than that with the average-based forecasting method. abdeh et al. [4] applied genetic fuzzy systems and showed that they are able to develop accurate and also interpretable intrusion detection systems. yu et al. [5] developed a fuzzy model tuner, through which the user can tune the model fuzzily but yield much appropriate tuning. the results showed the system can achieve about 23% improvement. works [6], [7] and [8] also point to the benefits of both approaches to improve the quality of transmission and predicting network anomalies. senturk et al. in [9] combined popular control charts, ewma statistics and fuzzy logic in function of network anomaly detection 251 ewma control chart for univariate data with fuzzy environment. the fuzzy ewma control charts (fewma) can be used for detecting small shifts in the original data represented by fuzzy numbers (unlike this paper, in which fuzzy logic is applied in the decision-making phase based on the original network values). the fewma control charts decreases number of false decisions by providing flexibility on the control limits. dickerson et al. [10] explored using fuzzy systems as the correlation engine for an ids. fuzzy systems have several important characteristics that suit intrusion detection: fuzzy systems can readily combine inputs from widely varying sources, many types of intrusions cannot be crisply defined, the degree of alarm that can occur with intrusions is often fuzzy. researchers [11] developed the fuzzy intrusion recognition engine (fire) using fuzzy sets and fuzzy rules. fire uses simple data mining techniques to process the network input data and generate fuzzy sets for every observed feature. the fuzzy sets are then used to define fuzzy rules to detect individual attacks. fire does not establish any sort of model representing the current state of the system, but instead relies on attack specific rules for detection. instead, fire creates and applies fuzzy logic rules to the audit data to classify it as normal or anomalous. the authors found that the approach is particularly effective against port scans and probes. the primary disadvantage of this approach is the labor intensive rule generation process. control charts have characteristics that can be successfully applied in detection of network anomalies to detect shifts. in addition to the ewma control charts, a cusum (cumulative sum) algorithm can be also used for monitoring of change-points, whose behaviour in the case of distributed denial of service (ddos) attacks is described in [31]. the authors in [32] implemented ewma to detect anomalous changes in the intensity of a jamming attack event by using the packet inter-arrival feature of the received packets from the wireless sensor nodes. this paper consists of six sections. the introduction offers a terminological basis for the problem of intrusion detection, then in the second section a short overview of anomaly detection techniques is presented. the ewma algorithm is described in the third section, followed by the fourth section dealing with the fuzzy approach. the simulation and results of analyzed algorithm and its various aspects in an adequate software environment are given in the fifth section. the sixth part elaborates the process of improving the results. finally, this paper closes with the conclusion based on the analyzed cases. 2. intrusion detection the main challenge in intrusion detection is that of separating anomalous events from normal events. anomalous events can include actual attacks against a computer system or more subtle and hence difficult to detect, probes that are aimed at information reconnaissance. another challenge in id is that of false positives. false positives in id occur when an ids reports an intrusion as occurring when in fact it has not. it has been argued that it is actually this false alarm rate that is the limiting factor in an idss performance. the performance of a network ids can be more effective if it includes not only attack signature matching but also traffic analysis at the same time. by using traffic analysis, anomalous traffic is identified as a potential intrusion. traffic analysis does not deal with the payload of a message, but its other characteristics such as source, destination, routing, length of the message, time it was sent, the frequency of the communication etc. 2. traffic payload is not always available for analysis – the traffic may be encrypted or it may simply be against policy to analyze packet payload 12. 252 p. ĉisar, s. maravić ĉisar anomaly detection techniques 13:  protocol anomaly detection – protocol anomaly refers to all exceptions related to protocol format and protocol behaviour.  application payload anomaly – application anomaly must be supported by detailed analysis of application protocols. application anomaly also requires understanding of the application semantics in order to be effective.  statistical anomaly – to fully characterize the traffic behaviour in any network, various statistical measures are used to capture this behaviour. additionally, the implemented statistical algorithm must recognize the difference between the long – term (assumed normal) and the short – term observations to avoid generating false alarms on normal traffic variations. network statistical anomaly detection (nsad) attempts to dynamically understand the network and statistically identify traffic that deviates from normal traffic usage and patterns. nsad systems can be broken down further into threshold, baseline and adaptive systems, with each looking for different triggers to identify anomalous behaviour 2. 3. exponentially weighted moving average many intrusions manifest in changes in the intensity of events occurring in computer networks. because of the ability of ewma control charts to monitor the rate of occurrences of events based on their intensity, this technique is appropriate for implementation in control limits based algorithms. the performance of standard ewma algorithm can be made more effective combining the concept of adaptive threshold algorithm and adequate application of fuzzy logic. the following section containing the theoretical background has already been discussed in previous works 14, 15, 16 yet it is vital for the comprehension of the entire paper to summarize it again. the exponentially weighted moving average is a statistic for monitoring the process that averages the data in a way that gives less and less weight to data as they are further removed in time. for the ewma control technique, the decision regarding the state of control of the process depends on the ewma statistics, which is an exponentially weighted average of all prior data, including the most recent measurements. the statistics that is calculated is: (1) for t = 1, 2, ...n where  ewma0 is the mean of historical data  yt is the observation at time t  n is the number of observations to be monitored including ewma0  0 < λ ≤ 1 is a constant that determines the depth of memory of the ewma. this equation is formulated by roberts 17. by the choice of weighting factor λ, the ewma control procedure can be made sensitive to a small or gradual drift in the process. the parameter λ determines the rate at which “older” data enter into the calculation of the ewma statistic. a value of λ = 1 implies that only the most recent measurement influences the ewma. thus, a large value of λ = 1 gives more weight to recent data and less weight to ewma statistics and fuzzy logic in function of network anomaly detection 253 older data a small value of λ gives more weight to older data 18. the value of λ is usually set between 0.2 and 0.3 19 although this choice is somewhat arbitrary. lucas and saccucci 20 have shown that although the smoothing factor λ used in an ewma chart is usually recommended to be in the interval between 0.05 to 0.25, in practice the optimally designed smoothing factor depends not only on the given size of the mean shift δ, but also on a given in-control average run length (arl). arl represents the average number of determined process points before the first point indices the appearance of out-of-control state (exceeding one of the control limits). the estimated variance of the ewma statistics is approximately: (2) when t is not small, where σ is the standard deviation calculated from the historical data. the center line for the control chart is the target value or ewma0. the upper and lower control limits are 21: (3) (4) where the factor k is either set equal 3 (the 3-sigma control limits) or chosen using the lucas and saccucci tables 20. ewma control chart is especially efficient in detecting small shifts of the monitored process – less than 1.5σ. control charts are specialized time series plots, which assist in determining whether a process is in statistical control. some of the most widely used forms of control charts are xr charts and individuals charts. these are frequently referred to as “shewhart” charts after the control charting pioneer walter shewhart who introduced such techniques. these charts are sensitive to detecting relatively large shifts in the process (i.e. of the order of 1.5σ or above). in computer network practice, shifts can be caused by intrusion or attack, for example. two types of charts are usually used to detect smaller shifts (less than 1.5σ), namely cusum charts and ewma charts. a cusum chart plots the cumulative sums of the deviations of each sample value from a target value. an alternative technique to detect small shifts is to use the ewma methodology. this type of chart has some very attractive properties, in particular 14, 16: 1. unlike x-r and individuals charts, all of the data collected over time may be used to determine the control status of a process. 2. like the cusum, the ewma utilizes all previous observations, but the weight attached to data exponentially decreases as the observations become older and older. 3. the ewma is often superior to the cusum charting technique due to the fact that it detects larger shifts better. 4. ewma schemes may be applied for monitoring standard deviations in addition to the process mean. 5. ewma schemes can be used to forecast values of a process mean. 6. the ewma methodology is not sensitive to normality assumptions. 254 p. ĉisar, s. maravić ĉisar in real situations, the exact value of the shift size is often unknown and can only be reasonably assumed to vary within a certain range. such a range of shifts deteriorates the performance of existing control charts. calculating the optimal value of parameter λ is based on the study of authentic samples of network traffic. random variations of network traffic are normal phenomena in the observed sample. in order to decrease or eliminate the influence of individual random variations of network traffic on occurrence of false alarms, the procedure of exponential smoothing is applied, as an aspect of data preprocessing. for any time period t, the smoothed value st is determined by computing: (5) where 0 < λ ≤ 1and t ≥ 3. this is the basic equation of exponential smoothing. the formulation here is given by hunter 19. it should be noted that there is an alternative approach, in which, according to roberts 17, yt is used instead of yt-1. this smoothing scheme starts by setting s2 to y1 (there is no s1), where si stands for smoothed observation or ewma, and yi stands for the original observation. the subscripts refer to the time periods 1, 2, ..., n. for example, the third period is s3 = λ y2 + (1 – λ) s2 and so on. there is no generally accepted statistical procedure for choosing λ. in that situation, the method of least squares might be adequate to determine the optimal value of λ for which the sum of the squared errors (sse) (sn-1−yn-1) 2 is minimized. the method of least squares represents a standard approach to the approximate solution of over-determined systems (i.e. sets of equations in which there are more equations than unknowns). the most important application is in data fitting. the best fit in the least squares sense minimizes the sum of squared residuals, a residual being the difference between an observed value and the fitted value provided by a model. here is an illustration of this principle through an example 15. consider the following data set consisting of n observations of data flow over time – for starting λ = 0.1: table 1 smoothing scheme time flow (yt) st error (st – yt) error squared 1 y1 2 y2 y1 e2 e22 3 y3 s3 e3 e32 ... ... ... ... ... n yn sn en en2 ssen the sum of the squared errors (sse) is then sse0.1. after that, the sse is calculated for λ = 0.2. if sse0.2< sse0.1 then sse0.2 is better value for λ. this iterative procedure is related to the range of λ between 0.1 and 0.9. in this way, the best initial choice for λ is determined and then, for getting more precise value, search optionally continues between λ–δλ and λ+δλ, where δλ is an arbitrarily small interval around λ (for instance, in practical applications, ± 10% around optimal λ). ewma statistics and fuzzy logic in function of network anomaly detection 255 the initial ewma plays an important role in computing all the subsequent ewma's. there are several approaches to define this value: 1. setting s2 to y1 2. setting s2 to the target of the process 3. setting s2 to average of the first four or five observations it can also be shown that the smaller the value of λ, the more important is the selection of the initial ewma. the sensitivity of standard ewma algorithm can be improved by implementing the logic of adaptive threshold algorithm 22. namely, network anomaly in adaptive algorithm is detected only in case when for multiple consecutive time intervals (in the figure below marked with #) the threshold is exceeded (if # > k, where the factor k is set by network security administrator). the sensitivity of this algorithm also depends on the value of the threshold exceeding (βμt, where where μt represents the measured mean in some observation period). fig. 2 adaptive threshold algorithm with the theme of statistical anomaly detection in computer networks and implementation of ewma statistics in network environment have dealt also the publications 23, 13, 15 and 24. 4. fuzzy approach the intrusion detection problem is viewed in the misuse or signature model as a classification problem: the goal is to classify patterns of the system behaviour in two categories (normal and abnormal), using patterns of known attacks, which belong to the abnormal class and patterns of the normal behaviour. with fuzzy rules, the solution of this classification problem is based on fuzzy logic concepts. fuzzy systems have several important characteristics that suit intrusion detection very well 10:  fuzzy implementations had been showed to possess ability to readily combine inputs from widely varying sources (for instance, digital cameras are usually equipped with auto-focusing feature that estimates the distance. for this purpose, camera's fuzzy control system uses several different inputs).  many types of intrusions cannot be crisply defined (e.g. the value of adaptive (variable) alarm threshold or network values, including intrusions, which in most real cases do not belong to a set of predefined values). 256 p. ĉisar, s. maravić ĉisar  the degree of alert that can occur with intrusions is often fuzzy because there is no clear distinction between normal and anomaly traffic behaviour in a network. in fuzzy logic, fuzzy sets define the linguistic notions and membership functions define the truth-value of such linguistic expressions 25. a collection of fuzzy sets, called fuzzy space, defines the fuzzy linguistic values or fuzzy classes that an object can belong to. for instance, a fuzzy space of five sets (low, med-low, medium, medhigh and high) is shown in the following figure 26. fig. 3 fuzzy space of five sets with fuzzy spaces, fuzzy logic allows an object to belong to different classes at the same time. this possibility is helpful when the difference between classes is not well defined. it is the case in the intrusion detection task, where the difference between the normal and abnormal class are not well defined 27. the approach to the problem of anomaly detection by inducting the fuzzy logic into time based ewma algorithm can be realized through several phases: definition of set of possible values of the state (inputs) in multiple categories the basic concept of the analyzed algorithm is the following: for the input network traffic samples, correspondent ewma values are calculated and observe as many consecutive values of how many sets the fuzzy space is composed. for the purposes of this analysis, the fuzzy space consists of three sets. it implies that the set of regular ewma values of network traffic is divided, depending on the intensity, on three categories. for instance: low, medium and high ewma value (in accordance with the defined membership function in relation to the threshold, shown in fig. 2). in addition to the criteria of traffic intensity, it is possible in a similar way to set the other variable criteria for anomaly detection as well number of consecutive threshold (in this case, upper control limit) overcomes #. since by its nature it represents a crisp value that can not be fuzzified, this paper will, for reasons of simplification of analysis without loss of generality, accept the value of # = 3. this means that the fuzzy algorithm analyzes a block of three consecutive ewma values (ewma1, ewma2 and ewma3) and depending on their values, formulates the conclusion about the type of output. with implementation of exceeding parameter (the parameter that indicates the percentage above upper threshold; e.g. 0.5), fine tuning of the algorithm is provided, additionally eliminating false alarms. definition of set of possible actions (or output types) in a few sets or categories in the case of anomaly detection, the possible set of output actions could be attack alarm, warning alarm and indication of normal condition. in this way, fuzzy outputs are ewma statistics and fuzzy logic in function of network anomaly detection 257 determined. in order to do this, it is necessary first to set up the empirical definition of fuzzy rules ("if then" rules) or fuzzy relations. fuzzy rules in this case may look like this:  if all three ewma values of traffic are high (vrednost veća od thresholda), then attack alarm is generated.  if two values are high, and one is medium, then warning alarm is generated.  all other cases represent normal traffic situations. the next step is defining the membership function that describes the fuzzy sets. a membership function is a curve that defines how each point in the input space is mapped to a membership value (or degree of membership) between 0 and 1. there are different types of membership functions. the only condition a membership function must really satisfy is that it must vary between 0 and 1. the function itself can be an arbitrary curve whose shape is defined as a function that suits from the point of view of simplicity, convenience, speed, and efficiency. fuzzy inference is the actual process of mapping from a given input to an output using fuzzy logic. 5. simulation and results for simulation of described fuzzy ewma algorithm the software package “matlab” fuzzy logic toolbox 2.0 was used. the basic simulation scheme of algorithm consists of three consecutive input ewma values and one output value (fig. 4). in the fuzzy logic toolbox, there are five parts of the fuzzy inference process:  fuzzification of the input variables  application of the fuzzy operator (and or or) in the antecedent  implication from the antecedent to the consequent  aggregation of the consequents across the rules  defuzzification fig. 4 basic simulation scheme two types of fuzzy inference systems (fis) is possible to implement in the toolbox: mamdani-type and sugeno-type. these two types of inference systems vary somewhat in the way outputs are determined. sugeno (or takagi-sugeno-kang) method of fuzzy 258 p. ĉisar, s. maravić ĉisar inference is similar to the mamdani method in many respects. the first two parts of the fuzzy inference process, fuzzifying the inputs and applying the fuzzy operator, are exactly the same. the main difference between mamdani and sugeno is that the sugeno output membership functions are either linear or constant. mamdani-type inference, as defined for the toolbox, expects the output membership functions to be fuzzy sets. after the aggregation process, there is a fuzzy set for each output variable that needs defuzzification 28, 29. the membership functions for inputs and output are determined according to the following figures: fig. 5 input and output membership functions after creation of membership functions, the next step is formulation of fuzzy rules, which is realized using rule editor (fig. 6). ewma statistics and fuzzy logic in function of network anomaly detection 259 fig. 6 fuzzy rules the first check of this fuzzy algorithm is made in such way that input values (ewma1 = ewma2 = ewma3 = 0.91) are selected with intention to generate an alarm situation. it was expected, in accordance with defined rules, to get relatively high output value, which was also actualized (output = 0.945). the practical choice of input values is realized by scrolling the vertical line that indicates the value, while the program automatically recalculates the value of output. fig. 7 rule viewer (alarm condition) 260 p. ĉisar, s. maravić ĉisar the form analysis of membership functions is done for selected combination of input values that generates warning and alarm indication. the situation in case of chosen input values that generates a warning condition, is given by fig. 8. fig. 8 rule viewer (warning condition) changing the offered membership functions 30, the output values were examined and compared. in case of warning, for „warning“ segment, the following output values are confirmed: table 2 output values warning membership function output value triangular (trimf) 0.538 generalized bell (gbellmf) 0.533 gaussian curve (gaussmf) 0.535 two-sided composite gaussian curve (gauss2mf) 0.533 similarly, in case of alarm, for „alarm“ output segment, the following values are confirmed: table 3 output values alarm membership function output value triangular (trimf) 0.945 sigmoidal (sigmf) 0.943 difference between two sigmoidal functions (dsigmf) 0.944 product of two sigmoidal functions (psigmf) 0.943 looking at the results from these tables, insignificant differences can be found in output values. however, triangular membership function provides the largest output value and may be concluded that it is the most appropriate shape for application in case of this security algorithm. ewma statistics and fuzzy logic in function of network anomaly detection 261 simulation of algorithm in conditions of network anomaly as an illustration of the functioning of the described anomaly detection algorithm, the samples of network traffic (acknowledgement (ack) numbers in tcp headers) can serve in observation time period with the parameters calculated on the basis of historical data: ewma0 = 50 and σ = 2.0539, with λ accepted to be 0.3 (often used value). the control limits are in this case: ucl = 50 + 3*(0.4201)*(2.0539) = 52.5884 ≈ 52.6 lcl = 50 – 3*(0.4201)*(2.0539) = 47.4115 ≈ 47.4 data from table 4 derive from local server using a packet sniffer (wireshark) that captures and filters packets according to specific protocol. in order to see only captured packets using the tcp protocol, in the filter field is necessary to enter "tcp" as shown in figure 9 (example). extracting the ack numbers of packets (rounded data values) is realized 35 times, at equal time intervals (5 minutes). fig. 9 filtering tcp packets 262 p. ĉisar, s. maravić ĉisar table 4 network traffic samples and ewma values sample data ewma 0 50.00 1 52 50.60 2 47 49.52 3 53 50.56 4 49.3 50.18 5 50.1 50.16 6 47 49.21 7 51 49.75 8 50.1 49.85 9 51.2 50.26 10 50.5 50.33 11 49.6 50.11 12 47.6 49.36 13 49.9 49.52 14 51.3 50.05 15 47.8 49.38 16 51.2 49.92 17 52.6 50.73 18 52.4 51.23 19 53.6 51.94 20 52.1 51.99 21 53.9 52.56 22 53 52.69 23 52.9 52.76 24 52.5 52.68 25 51.8 52.42 26 49.7 51.60 27 50.5 51.27 28 49.9 50.86 29 48.5 50.15 30 49.6 49.99 31 51.2 50.35 32 48.3 49.74 33 50 49.81 34 50.4 49.99 35 51.6 50.47 analyzing the values in the table above, it should be noted that three consecutive values of network traffic in the marked samples 21-23 are above the ucl (the 19th sample is a single case that is not of interest for analysis), simulating in this way the situation suspicious to alarm. these elevated traffic values result in expected increase in the three consecutive ewma values (22-24 marked), which also exceed the ucl value. accepting that each network value that is for 20% or more greater than ucl (threshold = 1.2*ucl, analogy with fig. 2) is a situation which can be interpreted as a certain alarm, and bearing in mind the form of membership functions (fig. 5), the situation of warning is at about 80% (between 0.75 and 0.9 more precisely) of the alarm situation, which is 0.8*0.2 = 0.16. it gives an alarm threshold value of 52.75 (ucl + 0.16). among the three marked ewma values that exceeded the threshold, only one was greater than 52.75. deciding on ewma statistics and fuzzy logic in function of network anomaly detection 263 the basis of the majority logic (one alarm situation and two warnings), it is concluded that the analyzed network situation can be interpreted as a warning. 6. improvement of results in further phase of research, the improvement possibility of previously obtained results will be examined. in that sense, the idea was to predefine some of the built-in fuzzy operators, because fuzzy logic toolbox offers this opportunity. the situation when all three inputs have high values was analyzed. firstly, it is found that the choice of some other or method and aggregation does not affect the output value. in and method, the options “min“ and “prod“ were examined and determined the correspondent output values 0.945 (min) and 0.934 (prod). in this research, instead of function “min“, the function of square root of minimum is proposed and tested its impact on the output value. this function is defined in file customand.m as: function y=customand(x) y=sqrt(min(x)), and gave the output result 0.949, which is better than “min“ function’s result. in addition to this, research has shown that “prod“ function from implication part generates higher output signal then “min“ function, which represents another improvement. similarly, it is shown that “mom“ option (mean of maximum) instead of popular “centroid“ from defuzzification part has the greatest impact on output. considering the previous improvements, testing the output values was performed with the following selected options (fig. 10). the final result of this research is given by fig. 11. fig. 10 the final fuzzy inference options fig. 11 the final result 264 p. ĉisar, s. maravić ĉisar analyzing the last figure, it is necessary to emphasize the greatest value of output (0.99), which proves the correctness of presented conclusions. the percentage of improvement compared to the previous case (0.945) is about 5%. 7. conclusion on the basis of elaboration presented in this paper it can be concluded that the introduction of fuzzy logic in standard ewma algorithm for anomaly detection the socalled fuzzy ewma (fewma) algorithm opens the possibility of previous warning from a network attack, which contributes to raising the level of security. standard ewma algorithm does not have this opportunity. besides, fuzzy logic enables precise determination (fine tuning) of degree of the risk (expressed in form of percentage). it is important to emphasize that here proposed improvement of standard ewma algorithm can be applied to other algorithms based on threshold, since ewma algorithm in its basis, is security algorithm with fixed threshold. the future work will focus on creating opportunities for practical testing of the presented approach in real time. this involves enabling the automation of algorithm functioning by creating the appropriate software for taking live-network traffic samples, calculating ewma values and real-time decision-making, and linking these functions with fuzzy module that has the ability to adjust the membership functions of the input and output. references [1] s. drew, intrusion detection faq: what is the role of security event correlation in intrusion detection?, sans institute, http://www.sans.org/security-resources/idfaq/role.php [2] p. ĉisar and s. maravić ĉisar, “network statistical anomaly detection based on traffic model. annals of faculty engineering hunedoara”, international journal of engineering, tome x-fascicucle 3, , pp. 89–96, 2012. [3] n. ye, q. chen and c.m. borror, “ewma forecast of normal system activity for computer intrusion detection”, ieee transactions on reliability, vol. 53, no. 4, pp. 557–566, 2004. [4] m.s. abadeh, h. mohamadi and j. habibi, “design and analysis of genetic fuzzy systems for intrusion detection in computer networks”, expert systems with applications, vol. 38, no. 6, 2011, pp. 7067–7075. [5] z. yu and j. tsai, “fuzzy model tuning for intrusion detection systems”, in proceedings of the international conference on autonomic and trusted computing, atc 2006, 2006, pp. 193-204. [6] g. spathoulas and s. katsikas, “reducing false positives in intrusion detection systems”, computers & security, vol. 29, no. 1, pp. 35–44, 2010. [7] a. silva, e. pontes and f. zhou, “prbs/ewma based model for predicting burst attacks (brute froce, dos) in computer networks”, in proceedings of the international conference on digital information management (icdim), 2014. [8] h.h.w.j. bosman, anomaly detection in networked embedded sensor systems. university of technology, eindhoven, 2016 [9] s. senturk, n. erginel, i. kaya and c. kahraman, “fuzzy exponentially weighted moving average control chart for univariate data with a real case application”, applied soft computing, vol. 22, pp. 1–10, 2014. [10] j.e. dickerson, j. juslin, o. koukousoula, and j.a. dickerson, “fuzzy intrusion detection ifsa world congress and 20th north american fuzzy information processing society (nafips)”, in proceedings of the international conference, vancouver, british columbia, vol. 3, 2001, pp. 1506-1510. [11] j.e. dickerson and j.a. dickerson, “fuzzy network profiling for intrusion detection”, in proceedings of the nafips 19th international conference of the north american fuzzy information processing society, atlanta, 2000, pp. 301-306. [12] k. liston, intrusion detecion faq: can you explain traffic analysis and anomaly detection?” sans institute, http://www.sans.org/security-resources/idfaq/anomaly_detection.php ewma statistics and fuzzy logic in function of network anomaly detection 265 [13] g. fengmin, deciphering detection techniques: part ii anomaly–based intrusion detection. white paper, mcafee security, 2003, https://secure.mcafee.com/japan/products/pdf/deciphering_detection_ techniques-anomaly-based_detection_wp_en.pdf [14] p. ĉisar and s. maravić ĉisar, “optimization methods of ewma statistics”, acta polytechnica hungarica, vol. 8, no. 5, pp. 73–87, 2011. [15] p. ĉisar, s. bošnjak and s. maravić ĉisar, “ewma-based threshold algorithm for intrusion detection”, computing and informatics, vol. 29, institute of informatics, slovak academy of sciences, bratislava, slovakia, pp. 1089–1101, 2010. [16] p. ĉisar, s. bošnjak and s. maravić ĉisar, “ewma algorithm in network practice”, int. j. of computers, communications & control, vol. v, no. 2, 2010, pp. 160–170. [17] s.w. roberts, control chart tests based on geometric moving averages. technometrics, 1959 [18] nist/sematech e-handbook of statistical methods (2008). http://www.itl.nist.gov/div898/handbook/ pmc/section3/pmc324.htm [19] j.s. hunter, the exponentially weighted moving average. journal of quality technology 18, 1986, pp. 203–210. [20] j.m. lucas and m.s. saccucci, exponentially weighted moving average control schemes: properties and enhancements. technometrics vol. 32, no. 1, 1990, pp.1-29. [21] engineering statistics handbook–ewma control charts, http://www.itl.nist.gov/div898/handbook/ pmc/section3/pmc324.htm [22] v. siris and f. papagalou, application of anomaly detection algorithms for detecting syn flooding attacks, 2004, http://www.ist-scampi.org/publications/papers/siris-globecom2004.pdf [23] s. sorensen, competitive overview of statistical anomaly detection. white paper, juniper networks, 2004 [24] p. ĉisar and s. maravić ĉisar, network statistics in function of statistical intrusion detection. springer publication, studies in computational intelligence, volume 313, springer verlag publication, 2010, pp. 27–35. [25] m. hellmann, fuzzy logic introduction. a laboratories antennas radar telecom, f.r.e cnrs 2272, equipe radar polarimetrie, 2000, france [26] s.m.a. naqshbandi and v.w. samawi, “one-rule genetic-fuzzy classifier”, in proceedings f the 2012 ieee international conference on in computer science and automation engineering (csae), vol. 2, 2012, pp. 204–208. [27] k. subramanian, “emerging intuitionistic fuzzy classifiers for intrusion detection system”, journal of advances in information technology 2.2, pp. 99–108, 2011. [28] matlab & simulink, “what is sugeno-type fuzzy inference?”, http://www.mathworks.com/help/fuzzy/ what-is-sugeno-type-fuzzy-inference.html [29] b. lazzerini, fuzzy logic toolbox, http://www.unife.it/ing/lm.infoauto/tecniche-controllo/fis_estratto.pdf [30] fuzzy logic toolbox user's guide, http://www.mathworks.com/help/pdf_doc/fuzzy/fuzzy.pdf [31] o. osanaiye, k.k.r. choo and m. dlodlo, “change-point cloud ddos detection using packet inter-arrival time”, in proceedings of the 8th ieee computer science & electronic engineering conference (ceec’16), sept 28th -30th 2016, essex, uk. [32] o. osanaiye, a.s. alfa and g.p. hancke, “a statistical approach to detect jamming attacks in wireless sensor networks”, sensors, vol. 18, no. 6, p. 1691, 2018. http://www.itl.nist.gov/div898/handbook/pmc/section3/pmc324.htm http://www.itl.nist.gov/div898/handbook/pmc/section3/pmc324.htm http://www.ist-scampi.org/publications/papers/siris-globecom2004.pdf facta universitatis series: electronics and energetics vol. 27, no 3, september 2014, pp. 339 357 doi: 10.2298/fuee1403339r harnessing cloud computing infrastructure for e-learning services  božidar radenković, marijana despotović-zrakić, zorica bogdanović, vladimir vujin, dušan barać faculty of organizational sciences, university of belgrade, serbia abstract. this paper introduces an innovative model for harnessing cloud computing infrastructure within an e-learning ecosystem. the main goal was to design a scalable, reliable and secure it environment that provides a plethora of e-learning services and seamless integration of the heterogeneous e-learning components through iaas, paas and saas cloud service models. the e-learning services are tailored to foster courses for it engineers in the areas of mobile technologies, social computing, internet of things and big data. the model was implemented and evaluated in the e-learning ecosystem of the e-business lab, university of belgrade. key words: cloud computing, e-learning services 1. introduction nowadays, building an e-learning ecosystem is quite a cumbersome endeavour, as it implies integration of various technologies, platforms, and services. the pervasiveness of internet technologies transforms e-learning ecosystems into dynamic environments that enhance learning processes, leverage collaboration, enable kpi management and allow a use of a variety of resources, software services and applications [1]. usage of e-learning technologies in the university and lifelong education has increased significantly in the past years; however, various problems have arisen. one of the most critical issues is the underlying infrastructure. accordingly, this requires innovative models and approaches in designing the infrastructure for e-learning systems. in this paper, a model for harnessing cloud computing infrastructure within an elearning ecosystem was introduced. the main goal was to design a scalable, reliable and secure it environment that enables the provision of a variety of e-learning services and seamless integration of the heterogeneous e-learning components. the model should support e-learning services delivered as infrastructure, network, platform, and software as a service. further, the results from the paper should raise the awareness of possibilities that cloud computing gives to e-learning, make an impact on the development of advanced  received march 12, 2014 corresponding author: božidar radenković faculty of organizational sciences, university of belgrade, serbia (e-mail: boza@elab.rs) 340 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać services for e-learning, and induce the harnessing of cloud computing in implementing the cloud infrastructure within educational institutions. the research context is focused on it infrastructure for educational institutions that educate it engineers in the fields of emerging technologies, such as cloud computing, mobile technologies, internet of things, context-aware computing, ubiquitous computing, social computing, big data, and virtual reality. the implementation was conducted in the e-learning processes of the e-business lab, faculty of organizational sciences, university of belgrade. 2. cloud computing infrastructure for e-learning research and case studies pointed out that the most common approaches in harnessing cloud computing within universities are private and public clouds [2][3][4]. a private cloud model enables educational institutions to have a complete control of identity management, services, data security, applications, and resources [5]. specifically, when courses are related to computer science, students can be provided with an appropriate environment for application development, and sophisticated software tools. recently, the number of private cloud based solutions within e-learning systems has significantly increased, and many examples can be found in the literature [6][7][8]. one of the main challenges in cloud computing environment is designing and managing the network infrastructure that could effectively support all cloud computing models [9] and provide adequate resources for teaching and research groups at universities. two disruptive technologies that can bring a new paradigm to university clouds are multitenancy virtualized clusters, and software defined networking. the concept of multi-tenancy implies that several tenants can use the same cloud infrastructure and share computing, storage, and network resources. in this scenario, each tenant's data and resources are isolated and remain invisible to other tenants. tenants in an e-learning system can be teachers, students, administrators, but at the same time tenants could be e-learning services and applications. network-as-aservice (naas) is a new cloud computing model in which tenants have access to additional computing resources collocated with switches and routers [10]. tenants can use naas to implement custom forwarding decisions based on application needs. this enables the design of efficient in-network services, such as data aggregation, stream processing, caching and redundancy elimination protocols, that are applicationspecific as opposed to traditional application-agnostic network services. for the realization of naas, the concepts of software defined networks are used. software defined networks (sdn) allow network management by abstractions of lower network levels [11]. they are based on the principles of clear distinction among management, service, control and forwarding network layers [12]. the aspects of designing a private cloud within an e-learning system significantly differ from the ones in the business sector. while in the business sector the focus is on costs and security, the e-learning systems require other aspects. flexibility in service design means that it infrastructure should be expandable and flexible, so as to support teaching courses in the fields of emerging trends in it. e-learning ecosystems require efficiency in resource usage and elastic provisioning and release of e-learning services, according to demand. further, teachers should be enabled to define cloud computing services that will be offered to students according to the specifics of each course. in addition, the harnessing cloud computing infrastructure for e-learning services 341 provision of self-service should be facilitated in order to allow access to information and applications at any time from any location. the design and implementation of cloud infrastructure and services for e-learning can be realized through the following steps: 1) conceptual design with respect to educational needs  this includes activities such as: defining a list of e-learning services and required service models, defining pedagogical aspects and expected workloads; 2) designing network and cloud infrastructure  several components should be designed: network infrastructure, cloud infrastructure, management and monitoring services; 3) designing and deploying cloud services  e-learning services deployment on the implemented infrastructure and integration with the learning management system; 4) testing, tuning and evaluation  testing the infrastructure, tuning the performance, evaluation of students’ and teachers’ results and satisfaction. 3. design and implementation 3.1. research context the e-business lab, university of belgrade, organizes e-learning courses using a ubiquitous learning concept. more than 1000 students are engaged in around 30 undergraduate and postgraduate studies in the fields of information technologies. the elearning system is based on the moodle learning management system (lms). some of the courses include internet technologies, mobile business, internet of things, cloud infrastructures and services, computer simulation and virtual reality, and others. the teaching process in each semester has specific software requirements for laboratory exercises and practical projects. most e-learning resources for each course are deployed for a specific course assignment. educational content is various and grows rapidly in amount, requiring scalable storage capacity. specifically, the requests to education content follow a highly dynamic rule. these issues affect resource utilization to a great extent. during the learning process a large amount of teaching material is generated, which further aggravates the available resources. one of the biggest problems in the implementation of an it infrastructure is a competitive access to the shared resources in the higher education institution [13]. in addition to scalability, the efficiency of the existing resources represents another problem. 3.2. conceptual design the conceptual model of the e-learning services within a private cloud of an educational institution is shown in fig. 1. infrastructural services can be grouped into: 1) core infrastructure services – critical services that need to be functional in order to enable efficient functioning of services for teaching and learning; 2) monitoring services – services for continuous monitoring of network, hardware and services. they are not necessary for functioning of the whole system, however, they enable a fast detection and correction of the problems in the functioning of the infrastructure; 3) backup services – services for creating backup copies of the system. their continuous functioning enables a fast recovery in case of disasters; 4) physically dependant services – group of services related to specific physical or virtual 342 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać hardware. these services enable functioning, access administration and replication of specific services related to that hardware. fig. 1 types of services deployed on the implemented infrastructure the e-learning service layer is designed to provide an environment for gaining practical knowledge in the fields of advanced information technologies. all of the cloud service deployment models should be supported, i.e. infrastructure, platform, and software as a service. infrastructure as a service (iaas) provides teachers with an opportunity to design specific infrastructure for each course. this model has been widely used in many educational institutions [14][15], mainly for providing students with virtual machines, where each machine contains all the necessary software and teaching materials for each course. further, this model can effectively be used to provide students with an it environment tailored for their own projects in the fields of enterprise networking, big data, distributed simulation, etc. platform as a service (paas) gives students an environment for developing software as service solutions in different areas, and in different programming languages. also, the paas model is suitable for courses where the emphasis is on software development while hardware layer is highly abstracted [16]. for example, software for mobile business or the internet of things projects can effectively be taught using this model. software as a service (saas) model is highly suitable for courses where students are required to learn to use specific software. this model can also be used to provide teachers and students with services that support educational processes, such as learning management systems, student relationship management, project management, digital libraries, and many others. harnessing cloud computing infrastructure for e-learning services 343 table 1 gives examples of possibilities of use for each cloud services model within the course related to a specific area of modern it. the areas of it have been selected according to trends given in [17][18][19][20]. table 1 it course areas with iaas, paas and saas examples course area iaas paas saas cloud computing – virtualization – software defined networks – software defined data centres – cloud storage – cloud based simulation – development of cloud software (google app engine, windows azure, amazon) – communication apps – cloud storage apps – social computing apps – apps management – web hosting service mobile technologies – software defined radio networks – sms api – mobile application development – mobile agents – mobile cloud applications – mobile commerce apps – m-payment apps – mobile learning apps – mobile social apps internet of things – software defined wireless sensor networks – smart environments – api for accessing the sensor data – api for contextaware applications – api for wearable computing applications – software for smart device management big data – environment for hadoop projects – environment for mongodb projects – map-reduce api – data analysis – visualization it management – cloud management – salesforce paas – heroku paas – project management software – crm software computer simulation and virtual reality – resources for simulation execution – environment for rendering – api for developing 3d models – web simulation software – 3d modelling software tools access to all services is managed using a single sign-on concept. the single sign-on (sso) concept can be used to solve many problems related to multiple credentials for different applications. sso is a mechanism that uses a single action of authentication to permit an authorized user to access all related but independent software systems or applications without being prompted to log in again at each of them during a particular session [21]. for instance, when a student accesses an e-learning course web page, they are being transferred to the home page of the e-learning portal that requires authentication (fig. 2). the e-learning portal component for identity management checks the credentials and sends a message to the learning management system. the student gains access to the e-learning resources that are available to their permissions within the course. 344 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać fig. 2 architecture of sso 3.3. designing network and cloud infrastructure the hierarchical network model is proven to be a good model for designing the network infrastructure for educational clouds [22]. this model divides the network in core, distribution, and access layers, where each layer performs a specific function. the advantages of using the hierarchical model are numerous. the principle of modularity simplifies the process of designing the network. testing and troubleshooting are easier, as well as network maintenance. more details on the design of hierarchical network model can be found in [22] . fig. 3 conceptual model of the cloud infrastructure harnessing cloud computing infrastructure for e-learning services 345 the hierarchical network model allows realization of a part of the network infrastructure within a private cloud. the cloud network infrastructure includes parts of distribution and access layers. the concept of virtual local area networks (vlan) is used, since within the cloud infrastructure it is important to isolate network traffic for each tenant. all servers are connected to access ports within the same vlan, so the communication between servers and virtual instances flows within the same network [23][24]. the usage of vlans enables a simple, flexible, and inexpensive way to administer the network; it provides a segmentation of virtual servers, and secures isolated network traffic between instances [25]. in addition, multiple vlans can be created for each instance [26]. this approach allows flexibility in the development of cloud e-learning services, because students can be provided with network, infrastructure, development platforms, and software as a service, according to the specifics of each course. the organization of the network segment of the cloud infrastructure is shown in figure 3. after setting up the network infrastructure, the main issue is to enable an efficient and comprehensive management of the network resources. considering the heterogeneity of e-learning systems’ components and a need for delivering resources and services on demand, the idea was to find and customize a tool that fulfils all the mentioned requirements. openstack is an open source cloud computing platform for public and private clouds primarily focused on infrastructure as a service [27]. it provides software, control panels, and apis required to orchestrate a cloud, including running instances, managing networks, and controlling access. the communication of openstack services is realized through public apis. the main features of the openstack include: multi-tenancy, massive scalability, multiple network models, pluggable authentication, block storage support, control panel, hypervisor support [28][29]. openstack networking adds a layer of virtualized network services. this gives tenants the capability for designing their own, virtual networks. neutron, openstack project that provides networking as a service, allows users to create multiple tenant networks [30]. a single open-switch bridge can be utilized by multiple tenant networks using different vlan ids, allowing instances to communicate with other instances across the environment. neutron has an api extension to allow administrators and tenants to create routers that connect to l2 networks. neutron uses the linux ip stack and iptables to perform l3 forwarding and nat. in order to support multiple routers with potentially overlapping ip addresses, the linux network namespaces are used to provide isolated forwarding contexts. like the dhcp namespaces that exist for every network defined in neutron, each router has its own namespace with a name based on its uuid. giving each application its own virtual infrastructure, including its own network, leads to simplified security configurations, and gives developers additional flexibility. application owners in this case do not use the shared infrastructure, but instead each has their own end-to-end infrastructure, isolated from the others, and with few or no interaction points. the flexibility and automation that comes with virtualization of the network allows both network administrators and application owners to respond more quickly to educational needs. for instance, in periods of high usage of the e-learning system (during labs, tests, upload of assignment, etc.) using openstack, an it administrator can easily reserve additional computing resources on the infrastructure and add new instances of the needed server. at the same time, when a new course opens, services and applications tailored to the course’ requirements can be delivered in real time. in the periods of the reduced activities, some server instances can easily be removed. in that way, computing 346 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać resources are set free and can be used for other purposes. using openstack reporting services, teachers and administrators monitor performances of the systems, track ways that students use the system, and notice the most important constraints and factors that influence the outcome of the teaching and learning processes. integrated dedicated and virtual servers in cloud infrastructure are shown in fig. 4 fig. 4 integrated dedicated and virtual servers in cloud infrastructure 3.4. designing big data infrastructure the concept of big data refers to large, diverse and distributed datasets that cannot be handled using conventional hardware and software infrastructures [31]. the term big data also refers to reliable, distributed and scalable infrastructure for managing large datasets [32]. the main problems in big data are related to gathering, storing, searching, analyzing, and visualization of large datasets. the cloud computing infrastructure is considered an adequate solution for these issues. the big data platform in the e-business lab is based on hadoop framework, which provides storage for large datasets, and large scale processing by using the map-reduce approach. the big data platform is realized using savanna plugin for openstack. savanna enables easier installation and management of hadoop stack. in addition, savanna enables easy service management. the implemented hadoop cluster is currently based on three hosts. the master host includes services for managing hadoop virtual functions. host nodes store data, and contain client services, such as pig, hive, hbase, which are used for data analysis. big data infrastructure is shown in fig. 5. harnessing cloud computing infrastructure for e-learning services 347 fig. 5 big data infrastructure 3.5. deploying cloud services services implemented on the cloud computing infrastructure are classified into two groups: services for students and services for teachers. some of the services are used by both students and teachers, such as moodle learning management system, which provides a variety of services that facilitate the learning process: course management, learning resources and activities management, collaboration tools, etc. the following text provides a brief description of the most frequently used services for teachers and students that are implemented on the cloud infrastructure. services for teachers include services that support teaching and administrative processes. intranet portal is a single access point to all the services and applications for the teachers. the portal was designed using the wordpress content management system. authentication is based on ldap. based on users’ requirements, the intranet portal communicates with the ldap server and provides users with appropriate services and information. the service for project management enables planning, tracking and reporting about projects within the laboratory. the service provides features such as role management, reporting services, gant chart and calendar, time tracking, wikis and forums per project, etc. the laboratory’s staff takes part in several projects at the same time and there is a strong need for a comprehensive project management solution [33][34]. the service is implemented using redmine software solution. 348 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać teachers are also provided with an adapted pydio tool that enables complete file management via web browser from any place. pydio (formerly ajaxplorer) is an open source software that enables any server (on premise, nas, cloud iaas or paas) to be turned into a file sharing platform. it is an alternative to saas boxes and drives, with more control, safety and privacy. advantages of this approach for file management are explained in [35][36]. a visual tool for easy management of the events in teaching, business, collaboration processes within laboratory is implemented using a wordpress plugin. the event management service is fully customizable and personalized according to the teachers’ preferences. further, the calendar content is provided on mobile devices, too. the notifications from the calendar are sent via email and sms as remainders. nurturing good relationship with students before, during and after their studies becomes a challenging issue [37]. in order to attract, engage, retain students and promote our activities we have developed comprehensive student relationship management services that have been implemented using a sugarcrm software solution. the sugarcrm is chosen because it is an open source, customizable, and easy to use. the module for managing activities related to students contains information about each student, contact details, additional comments (remarks, suggestions, topics of final thesis, notes, etc.). the goal is to raise a relationship management system between students and educational institutions on a higher level in a simple and quick way by the use of high availability and prompt exchange of information. an example of using srm concept in e-learning management could be seen in [38]. the cloud infrastructure enables seamless design and development of e-learning services. these are numerous services for students implemented and evaluated within the private cloud of the e-business lab: services for adaptive e-learning [39], a platform for discrete event simulation [40][41], services for learning continuous simulation [42], services for mobile learning [43], services for mobile language learning [44], services for social network learning [45], and services for visualization [46]. hereinafter, we focus on services related to the usage of cloud resources, and platforms for learning the concepts of mobile technologies, the internet of things and big data. cloud resource reservation service although theoretically cloud infrastructure gives a possibility for an elastic and seamless provisioning and release of e-learning cloud resources, there may be situations where students are required to book the needed cloud resources. fig. 6 shows the activity diagram for booking cloud resources. a teacher defines virtual machines (vm) according to the needs of each course; students can view the available virtual machines for each course they attend to, and reserve it resources, that will be allocated for them. teachers’ and students’ actions are handled through the moodle interface, while the scheduling and allocation of cloud resources is handled by the openstack. this approach enables educational institutions to use their cloud resources efficiently, even in cases when these resources are not as elastic as with commercial cloud providers. harnessing cloud computing infrastructure for e-learning services 349 fig. 6 cloud resource reservation service internet of things, sms, and big data platforms in order to conduct courses in the field of the internet of things several platforms have been developed: iot, bigdata and sms platforms. each platform provides rest apis, which enable a set of functionalities that can be integrated in students’ web and mobile applications. students’ applications are hosted on web hosting services that are also provided to students as cloud services. fig. 7 illustrates the architecture of the designed system. 350 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać fig. 7 architecture of the sms, iot and big data platforms the iot platform is developed in order to support the education in the field of designing internet of things applications [47][48]. during the lectures students gain an insight into the hardware aspects of the internet of things; however, the focus of the course is on the software aspects. therefore, the platform abstracts the hardware layer, and consists of: iot hardware that includes raspberry pi and arduino devices [49] connected with a number of different sensors and actuators; hardware controllers that include pre-programmed features necessary for gathering sensor data and manipulating the actuators; web services available to students to integrate them into their own applications. the internet of things projects in time can generate large quantities of data. therefore, big data infrastructures are often used to store and search sensor data. students can use the big data platform to store and analyze their data. the architecture enables real time analytics that students can implement within their projects. in order to support the development of sms based applications for courses in the fields of mobile technologies and the internet of things, an sms platform has been developed. the platform provides rest api for the integration of sms services into students’ web or mobile applications. an sms gateway device connected to gsm network is used to send and receive sms messages. gnokii is used as an sms server. it runs on a virtual machine connected to an sms gateway device. the sms application has been developed with the aim to sort the received sms messages to separate users' inboxes and generate api keys. these features are provided to students through a web portal. students can login by using their moodle credentials. after login, students can view their personal api key which is used for authentication to the web service. using the rest api, students can integrate sms services into their application. harnessing cloud computing infrastructure for e-learning services 351 4. evaluation and discussion the evaluation of the performance and benefits that cloud computing brings to educational institutions may be as complex as designing and developing the cloud infrastructure itself. most of the models for evaluation of the cloud are created for business environments, where the main kpis are related to costs, roi, availability, and scalability. although these factors are important in the educational contexts, factors related to pedagogical aspects and flexibility in the design the e-learning courses are more important. students’ and teachers attitudes towards cloud services have been studied by many researchers [14][50], as well as the metrics for high performance systems within educational and research institutions [51]. however, a good method for an overall evaluation of usefulness of educational clouds and flexibility in designing e-learning courses cannot be found in the literature yet. therefore, in this paper we will focus on three aspects: 1) analysis of data related to internal metrics for cloud provisioning, such as networking, storage and processors. this information should provide a base for better utilization of the available resources. 2) analysis of results that students achieve when using the developed sms and iot paas. these results should encourage teachers to use cloud services more frequently. 3) discussion of benefits that cloud services bring to e-learning environments. this analysis should contribute to a better incorporation of cloud services as integral elements of e-learning courses. 4.1. analysis of cloud performance the performance of a cloud computing system is determined by the analysis of the characteristics involved in performing an efficient and reliable service that meets requirements under stated conditions and within the maximum limits of the system parameters [52]. in order to measure the performance of the developed cloud computing infrastructure, a performance measurement framework has been applied. the framework defines qualitative and quantitative concepts as well as basic measuring functions (fig. 8). to measure the resource utilization four functions are used: failure function, task function, time function and transmission function. the time function is based on different methods for gathering data related to cpu user utilization, job duration and response time. the measurement procedure is similar for all the functions. the measures are then grouped together, depending on the desired perspective: user, developer, or maintainer. finally, the performance analysis is supported by an analysis model to help interpret the results by relating them to the initial performance requirements. cloud performance has been measured through load, cpu, and memory usage. networking metrics include parameters related to type of traffic, latency, throughput, and reliability. cloud storage is usually evaluated through availability and reliability which can be unambiguously measured, but also through security, simplicity and usability for users that are harder to quantify. for processor usage in private educational clouds, we can choose processor utilization or idle time as metrics, since these might give us an insight into how to improve the usage of available resources. parameters should be measured on the levels of physical and virtual resources, in order to enable a better utilization of all resources on all levels. 352 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać fig. 8 performance measurement model for cloud computing table 2 shows parameters related to resource usage within the developed private cloud of the e-business lab. parameters are shown for three representative services: moodle, hosting service (virtual machine which hosts most of the mentioned teaching and learning services), and students’ hosting service, where all students projects are hosted. maximum and average parameters are shown for the semester period and for the exam period. table 2 performance metrics of the private educational cloud during semester during exam period service metrics max average max average students’ hosting service cpu utilization 55% 7% 65% 32% load 17.3m 145k 21.4m 612k memory usage 7.9g 3.72g 8.1g 5.87g moodle cpu utilization 20% 2% 55% 13% load 8.61m 182k 36.69m 2.61m memory usage 14g 6g 23.7g 11g hosting service cpu utilization 48% 5% 86% 28% load 4.8m 124k 7.4m 419k memory usage 5.5g 3g 8.8g 4g harnessing cloud computing infrastructure for e-learning services 353 the results in table 2 show that all the parameters are in the acceptable range. a detailed analysis showed that maximum values were achieved in expected cases, e.g. during classes where around 60 students use the services concurrently, or during the exam when around 500 students access the moodle service simultaneously. high values of average memory usage are due to the reasonably high level of cached data. 4.2. analysis of students’ results in order to evaluate the students’ satisfaction and results when using the developed iot and sms paas, research has been conducted on a test sample of 8 students who attended a mobile business course at the master studies in e-business. the students were asked to participate in a workshop, where they were required to develop mobile applications using iot and sms paas. the task was to develop a mobile application for managing the air condition within a smart house. students' applications should enable functionalities to read the sensor data, turn on and off the air conditioning system, through an android application and through sms. students were grouped into four groups with two members in each group. students were provided with a preconfigured iot hardware based on arduino microcontroller connected with a temperature sensor. the arduino microcontroller was connected to a raspberry pi microcomputer, which was configured as an arduino controller and as a web server. raspberry pi was also connected to a led diode used to simulate an air conditioning system. in addition, students were provided with the functionalities of the iot platform that enable students’ applications to read the sensor data, and to turn on or off the air conditioning. functionalities of the sms platform included features to send and receive smss. the goal of the study was to examine the students’ impressions about the iot and sms platforms, as well as the attitudes towards this type of learning. two instruments were used in the research: a questionnaire for gathering data on students’ attitudes about the iot platform and learning of the iot, and a test for assessing the students’ knowledge. the questionnaire required students to grade the ease of use, quality of documentation, impacts on knowledge and motivation. an average grade that students achieved on the test is 8.31, with a standard deviation of 0.66. the analysis of questions showed that students had the most problems with questions related to hardware issues, while the questions related to software aspects were answered correctly by most of the students. scores that students assigned to each considered aspect of iot and sms platforms are shown in table 3: table 3 students’ impressions about iot and sms platforms high score=5 neutral score=3 low score=1 average ease of use 6 2 0 4.5 documentation 8 0 0 5 impact on knowledge 8 0 0 5 impact on motivation 6 1 1 4.25 354 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać the data in table 3 show that students are generally satisfied with the designed platforms. all of the students thought that the documentation and the impact on the knowledge were adequate. an average score for the impact on motivation was lowest, although every result above 4 can be considered as satisfactory. some of the students’ impressions were:  "it is intriguing, interactive, and fun. it was very motivating."  "i could gain useful and applicable knowledge."  "i liked that i could see the results of the programming at once."  "documentation should contain more code examples and video tutorials." the main deficiency of the pilot class was the fact that only eight students participated. still, currently there are not many research papers concerning the aspects of teaching and learning the iot using paas, therefore some general remarks useful for future research and teaching can be given. the students suggested the help from the teachers was important for the completion of their tasks; this especially needs to be considered if future classes are performed with a larger number of students. iot exercises that attempt to encompass both the hardware and software aspects of iot should likely be of longer length, as the students were mostly in favour of 3-hour classes over those twice as short. the sms service that was provided for sending and receiving sms messages was very well liked, although it was not a core part of the iot. this is probably due to the fact that sms messages are a very familiar concept, and it allowed the students to envision iot integration in a more realistic manner. the students should therefore be provided with as many other services as possible in order to widen the possibilities and increase motivation. students also felt that seeing the results of programming immediately was very motivating, so iot exercises should be designed in such a way to provide directly verifiable results, and preferably a direct impact on the physical world in some way. 4.3. discussion the cloud infrastructure brings educational institutions commonly known benefits such as using services on demand, resource elasticity, and mechanisms for measuring the usage of resources by numerous parameters [15][46]. specific benefits are reflected in the fact that cloud is suitable for cases when processes, applications, and data are largely independent, for example in different e-learning courses [6]. this can be effective in cases where cloud resources are needed for a course during the semester, but less needed when the semester is over. in this way, the same resources can be used for teaching different courses, without major infrastructure changes [15]. also, points of integration are well defined, and lower level of security is acceptable. one of the main challenges in designing the private cloud for e-learning is that it is rather complex and requires specific expert knowledge [16]. highly skilled staff is needed to design, implement, and maintain the network, cloud, and e-learning services. in the described approach, it is assumed that these experts can be found within educational institutions that realize study programs in the fields of information technologies and computer sciences. in addition, initial costs required for the realization of a private cloud can be significant, and in some cases, it may be less expensive to use services provided by a commercial cloud provider. however, private clouds provide high flexibility in designing e-learning courses [6][8]. the concept of network as a service gives possibilities to organize and use the physical infrastructure through heterogeneous logical infrastructures, where each user, i.e. harnessing cloud computing infrastructure for e-learning services 355 student, within each course can be provided with a required infrastructure [10]. finally, introducing new services within a private cloud is expected to have lower costs in comparison with public clouds. 5. conclusion the main contributions of the paper are reflected in an innovative model of the cloudbased infrastructure that enables hosting of a corpus of e-learning services. using hierarchical model in network design enables a high level of scalability and reliability. further, the model of infrastructure based on a private cloud is suitable for educational institutions. learning services are provided as infrastructure, platform or software on demand. in addition, software defined networks provide multi-tenancy and network as a service. the model is especially suitable as a support to study programs in the fields of emerging information technologies, where applications and usage scenarios are new and often experimental. the model has been implemented and used within the e-learning system in the e-business lab, the faculty of organizational sciences. future research is directed toward mainstreaming the infrastructure for big data into other areas of application, and improving the platform as a service for projects in the area of the internet of things. also, modern pedagogical approaches, such as game based learning, learning in context, etc., that include advanced it services are going to be applied and evaluated. acknowledgement: the authors are thankful to the ministry of education, science and technological development, the republic of serbia, for financial support grant number 174031. references [1] j. c. marcos recio and j. alcolado santos, “a new educational paradigm: from e-learning to cloud learning (c-learning). knowledge in the cloud.,” in edulearn11: 3rd international conference on education and new learning technologies, 2011, pp. 4932–4941. [2] n. sultan, “cloud computing for education: a new dawn?,” int. j. inf. manage., vol. 30, no. 2, pp. 109– 116, 2010. [3] n. radhakrishnan, n. p. chelvan, and d. ramkumar, “utilization of cloud computing in e-learning systems,” in 2012 international conference on cloud computing technologies, applications and management (iccctam), 2012, pp. 208–213. [4] m. h. sqalli, m. al-saeedi, f. binbeshr, and m. siddiqui, “ucloud: a simulated hybrid cloud for a university environment,” in 2012 ieee 1st international conference on cloud networking (cloudnet), 2012. [5] v. vujin, “cloud computing in science and higher education,” management, vol. 16, no. 59, pp. 65–70, 2011. [6] m. despotović-zrakić, v. milutinović, and a. belić, eds., handbook of research on high performance and cloud computing in scientific research and education. igi global, 2014. [7] l. xu, l. liu, and c. wu, “services enhancing usage of large equipments in a private cloud,” in 2013 international conference on service sciences (icss 2013), 2013, pp. 118–122. [8] f. doelitzscher, a. sulistio, c. reich, h. kuijs, and d. wolf, “private cloud for collaboration and elearning services: from iaas to saas,” computing, vol. 91, no. 1, pp. 23–42, jan. 2011. [9] b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, and d. barać, “designing network infrastructure for an e-learning cloud,” in the fourth international conference on e-learning (elearning2013), 2013. [10] p. wolf, c. matteo, m. peter, and a. l. pietzuch, “naas: network-as-a-service in the cloud.” [online]. available: http://research.microsoft.com/en-us/um/people/pcosta/papers/costa12naas.pdf. 356 b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, d. barać [11] s. paul, r. jain, m. samaka, and j. pan, “application delivery in multi-cloud environments using software defined networking,” comput. networks, 10.1016/j.comnet.2013.12.005, feb. 2014. [12] c. j. s. decusatis, a. carranza, and c. m. decusatis, “communication within clouds: open standards and proprietary protocols for data center networking,” ieee commun. mag., vol. 50, no. 9, pp. 26–33, sep. 2012. [13] v. vujin, a. milić, m. despotović-zrakić, b. jovanić, and b. radenković, “development and implementation of e-education model in a higher education institution,” sci. res. essays, vol. 7, no. 13, apr. 2012. [14] m. despotović-zrakić, k. simić, a. labus, a. milić, and b. jovanić, “scaffolding environment for е learning through cloud computing,” educ. technol. soc., vol. 16, no. 3, pp. 301–314, 2013. [15] l. m. vaquero, “educloud: paas versus iaas cloud usage for an advanced computer science course,” ieee trans. educ., vol. 54, no. 4, pp. 590–598, nov. 2011. [16] m. n. ameen, h. a. sanjay, and y. patel, “a service provisioning and managing framework for platform as a service in educational cloud,” in 2012 2nd ieee international conference on parallel, distributed and grid computing (pdgc), 2012, pp. 262–267. [17] gartner, “gartner identifies the top 10 strategic technology trends for 2014,” gartner, orlando, florida, 2013. . [18] ieee spectrum, “2014 top tech to watch,” 2014. [online]. available: http://spectrum.ieee.org/static/ 2014-top-tech-to-watch. [19] d. milojičić, “ieee computer society 2022 report,” in joint seminar on computer science and applied mathematics, 30.12.2013., 2013. [20] european commission, “horizon 2020 work programme 2014-2015,” 2013. [21] s. suriadi, e. foo, and a. jøsang, “a user-centric federated single sign-on system,” j. netw. comput. appl., vol. 32, no. 2, pp. 388–401, mar. 2009. [22] b. radenković, m. despotović-zrakić, z. bogdanović, v. vujin, and d. barać, “designing network infrastructure for an e-learning cloud,” in the fourth international conference on e-learning (elearning2013), 2013. [23] y.-w. e. sung, x. sun, s. g. rao, g. g. xie, and d. a. maltz, “towards systematic design of enterprise networks,” ieee/acm trans. netw., vol. 19, no. 3, pp. 695–708, jun. 2011. [24] z. xiyang and c. chuanqing, “research on vlan technology in l3 switch,” in 2009 third international symposium on intelligent information technology application, 2009, pp. 722–725. [25] x. wang, h. zhao, m. guan, c. guo, and w. jiyong, “research and implementation of vlan based on service,” in globecom ’03. ieee global telecommunications conference (ieee cat. no.03ch37489), vol. 5, pp. 2932–2936. [26] m. yu, j. rexford, x. sun, s. rao, and n. feamster, “a survey of virtual lan usage in campus networks,” ieee commun. mag., vol. 49, no. 7, pp. 98–103, jul. 2011. [27] m. bist, m. wariya, and a. agarwal, “comparing delta, open stack and xen cloud platforms: a survey on open source iaas,” in 2013 3rd ieee international advance computing conference (iacc), 2013, pp. 96–100. [28] a. corradi, m. fanelli, and l. foschini, “vm consolidation: a real case based on openstack cloud,” futur. gener. comput. syst., vol. 32, pp. 118–127, mar. 2014. [29] j. bernal bernabe, j. m. marin perez, j. m. alcaraz calero, f. j. garcia clemente, g. martinez perez, and a. f. gomez skarmeta, “semantic-aware multi-tenancy authorization system for cloud architectures,” futur. gener. comput. syst., vol. 32, pp. 154–167, mar. 2014. [30] “neutron’s developer documentation.” [online]. available: http://docs.openstack.org/developer/neutron/. [31] l. liu, “computing infrastructure for big data processing,” front. comput. sci., vol. 7, no. 2, pp. 165– 170, apr. 2013. [32] h. chen, r. h. l. chiang, and v. c. storey, “business intelligence and analytics: from big data to big impact,” mis q., vol. 36, no. 4, pp. 1165–1188, dec. 2012. [33] n. g. hall, “project management: recent developments and research opportunities,” j. syst. sci. syst. eng., vol. 21, no. 2, pp. 129–143, jun. 2012. [34] m. braglia and m. frosolini, “an integrated approach to implement project management information systems within the extended enterprise,” int. j. proj. manag., vol. 32, no. 1, pp. 18–29, jan. 2014. [35] v. stantchev, r. colomo-palacios, p. soto-acosta, and s. misra, “learning management systems and cloud file hosting services: a study on students’ acceptance,” comput. human behav., vol. 31, pp. 612– 619, feb. 2014. [36] d. dunford, “managed file transfer: the next stage for data in motion?,” netw. secur., vol. 2013, no. 9, pp. 12–15, sep. 2013. [37] m. b. piedade and m. y. santos, “student relationship management: concept, practice and technological support,” in 2008 ieee international engineering management conference, 2008, pp. 1–5. harnessing cloud computing infrastructure for e-learning services 357 [38] b. radenkovic, m. despotovic-zrakic, z. bogdanovic, a. labus, and m. milutinovic, “providing services for student relationship management on cloud computing infrastructure,” in 2013 11th international conference on telecommunications in modern satellite, cable and broadcasting services (telsiks), 2013, pp. 385–388. [39] m. despotovic-zrakic, a. markovic, z. bogdanovic, d. barac, and s. krco, “providing adaptivity in moodle lms courses,” educ. technol. soc., vol. 15, no. 1, pp. 326–338, 2012. [40] m. despotović-zrakić, d. barać, z. bogdanović, b. jovanić, and b. radenković, “integration of web based environment for learning discrete simulation in e-learning system,” simul. model. pract. theory, vol. 27, pp. 17–30, sep. 2012. [41] m. despotović-zrakić, d. barać, z. bogdanović, b. jovanić, and b. radenković, “web-based environment for learning discrete event simulation,” j. univers. comput. sci., vol. 18, no. 10, pp. 1259– 1278, may 2012. [42] m. despotović-zrakić, d. barać, z. bogdanović, b. jovanić, and b. radenković, “software environment for learning continuous system simulation,” acta polytech. hungarica, vol. 11, no. 02, feb. 2014. [43] z. bogdanović, d. barać, b. jovanić, s. popović, and b. radenković, “evaluation of mobile assessment in a learning management system,” br. j. educ. technol., p. n/a–n/a, feb. 2013. [44] m. milutinović, a. labus, v. stojiljković, z. bogdanović, and m. despotović-zrakić, “designing a mobile language learning system based on lightweight learning objects,” multimed. tools appl., sep. 2013. [45] a. labus, k. simić, m. vulić, m. despotović-zrakić, and z. bogdanović, “an application of social media in elearning 2.0,” in proceedings of the 25th bled econference edependability: reliable and trustworthy estructures, eprocesses, eoperations and eservices for the future, 2012, pp. 557–572. [46] z. bogdanovic, m. despotovic-zrakic, m. milutinovic, m. andjelic, and s. milinovic, “model for enhanced data management, visualization, and adaptation in e-learning,” manag. j. theory pract. manag., vol. 18, no. 69, pp. 5–14, dec. 2013. [47] j. carretero and j. d. garcía, “the internet of things: connecting the world,” pers. ubiquitous comput., vol. 18, no. 2, pp. 445–447, may 2013. [48] j. gubbi, r. buyya, s. marusic, and m. palaniswami, “internet of things (iot): a vision, architectural elements, and future directions,” futur. gener. comput. syst., vol. 29, no. 7, pp. 1645–1660, 2013. [49] a. d’ausilio, “arduino: a low-cost multipurpose lab equipment.,” behav. res. methods, vol. 44, no. 2, pp. 305–13, jun. 2012. [50] w.-w. wu, l. w. lan, and y.-t. lee, “factors hindering acceptance of using cloud services in university: a case study,” electron. libr., vol. 31, no. 1, pp. 84–98, 2013. [51] t. r. furlani, m. d. jones, s. m. gallo, a. e. bruno, c.-d. lu, a. ghadersohi, r. j. gentner, a. patra, r. l. deleon, g. von laszewski, f. wang, and a. zimmerman, “performance metrics and auditing framework using application kernels for high-performance computer systems,” concurr. comput. pract. exp., vol. 25, no. 7, pp. 918–931, may 2013. [52] l. bautista, a. abran, and a. april, “design of a performance measurement framework for cloud computing,” a j. softw. eng. appl., 2011. facta universitatis series: electronics and energetics vol. 27, no 3, september 2014, pp. 359 373 doi: 10.2298/fuee1403359s noises in randomly sampled sparse signals  ljubiša stanković university of montenegro, podgorica, montenegro abstract. sparse signals can be recovered from a reduced set of randomly positioned samples by using compressive sensing algorithms. two main reconstruction directions are in the sparse transformation domain analysis of signals and the gradient based algorithms. in the transformation domain analysis, that will be considered here, the estimation of nonzero signal coefficients is based on the signal transform calculated using available samples only. the missing samples manifest themselves as a noise. this kind of noise is analyzed in the case of random sampling, when the sampling instants do not coincide with the sampling theorem instants. analysis of the external noise influence to the results, with randomly sampled sparse signals, is done as well. theory is illustrated and checked on statistical examples. key words: sparse signals, compressive sensing, noise, fourier transform 1. introduction a signal can be transformed from one domain into another in various ways. some signals that cover whole considered interval in one domain (dense in that domain) could be located within much smaller regions in another domain. we say that signals are sparse in a transformation domain if the number of nonzero coefficients is much fewer that the total number of signal samples. for example, a sum of discrete-time complex sinusoidal signals, with a number of components being much lower than the number of signal samples in the time domain, is a sparse signal in the discrete fourier transform (dft) domain. sparse signals could be reconstructed from much fewer samples than the sampling theorem requires. compressive sensing is a field dealing with the problem of signal recovery from a reduced set of samples [1]-[21]. this research area intensively develops in the last decade. it provides solutions that differ from the classical signal theory approach. two main directions in the signal recovery are present. one is based on the signal transform analysis (orthogonal matching pursuit methods) and the other is based on the gradient methods. the samples could be missing due to a desire to represent a signal with the lowest possible number of samples or due their physical or measurement unavailability. in applications it could happen that some arbitrarily positioned samples of the signal are so heavily corrupted by disturbances that it is better to omit them and consider as unavailable in the analysis.  received march 23, 2014 corresponding author: ljubiša stanković university of montenegro, podgorica, montenegro (e-mail: ljubisa@ac.me) 360 lj. stanković this is especially true for the impulsive noise [4], [23]. as a study case, in this paper we will consider signals that are sparse in the fourier transform domain. signal sparsity in the discrete fourier domain imposes some restrictions on the signal. one of them is that the frequencies of the signal components are on the frequency grid. otherwise even one component complex sinusoidal signal will not be sparse in the dft domain. reducing the number of samples in the analysis manifests as a noise, whose properties are studied in [13] and used in [24] to define a reconstruction algorithm. the input noise influence is also an important topic in this analysis since the reduced number of available samples could increase the sensitivity of the recovery results to this noise [8], [24]. in this paper sparse signals with available samples at the random positions, that do not correspond to the sampling theorem defined positions, will be analyzed. it will be shown that the noise due to random sampling exists even in the case of large number of available samples. in the case on nonuniformly sampled signals a possibility to recalculate the signal samples values to the sampling theorem positions is exploited [25]. efficiency of this recalculation in the signal recovery is studied for various numbers of available signal values. an analysis of the additive input noise is done as well. theoretical results are statistically checked. 2. reconstruction algorithm 2.1. definitions consider a discrete-time signal x(n) obtained by sampling a continuous-time signal x(t). since the dft will be used in the analysis then we can assume that the continuoustime signal is periodically extended with a period t. the period t is related to the number of samples n, the sampling interval t, and the maximal frequency m as m =  / t = n / t . the continuous-time signal can be written as an inverse fourier series ( 1)/2 2 / = ( 1)/2 ( ) = . n j kt t k k n x t x e      (1) with the fourier series coefficients being related to the dft as = ( ) = { ( )}kx n x k dft x n and x(n) =x(nt). frequency indices { ( 1) / 2,... 1,0,1,..., ( 1) / 2}k n n     corresponds to the frequencies 2 / ( 1)mk n  in the analog domain. this signal can be reconstructed from its samples taken according to the sampling theorem as 1 =0 sin[( ) ] ( ) = ( ) . sin[( ) / ] n n t n tx t x n t t n n n t         (2) this relation holds for an odd n. slightly corrected relation holds for an even n, [5], [25]. the signal x(t) is sparse in the fourier transform domain if the number of nonzero transform coefficients k is much lower than the number of the original signal samples n within t , k n , i.e., = 0kx for 1{k k , 2k , ..., }kk . a signal noises in randomly sampled sparse signals 361 2 / { , ,..., } 1 2 ( ) = .j kt t k k k k k k x t x e    (3) of sparsity k can be reconstructed from m samples, where m  n. 2.2. known frequency positions in the case of signal that is sparse in the fourier domain there are k unknown values xk1 , xk2 ,..., xkk . if the frequency positions {k1, k2, ..., kk} are known then the minimal number of equations to find the unknown coefficients (and to calculate (3) for any t) is k. the equations are written for at least k time instants ti, i = 1,2,...,m  k, where the signal should be available, 2 / =1 = ( ), for = 1,2,..., . k j k t t m i k i m m x e x t i m k   (4) in a matrix form this system is kax = y , (5) where xk is the vector of unknown nonzero coefficients and y is the vector of the available signal samples, defined as 1 2 = [ ... ]t k k k k k x x xx (6) 1 2= [ ( ) ( ) ... ( )]t mx t x t x ty with 2 / 2 / 2 / 11 2 1 1 2 / 2 / 2 / 1 2 2 2 2 2 / 2 / 2 / 1 2 ... ... = ... ... ... ... ... j k t t j k t t j k t t k j k t t j k t t j k t t k j k t t j k t t j k t t m m k m e e e e e e e e e                        a . (7) the coefficients reconstruction condition can be easily formulated as the condition that the system (5) has a unique solution, i.e.,.that det( ) 0a for the time instants ti where the signal is available and for the known frequency indices ki, i = 1,2,...,k, for m = k. in general, for m > k, the condition is that there are k independent equations, rank( ) = .ka special case 1: consider a sparse signal with frequencies k1, k2, ..., kk. assume that the available signal samples are a random subset of the full set of signal samples taken according to the sampling theorem ti = nit. the set {k1, k2, ..., kk} in the dft analysis can be considered as a subset of all frequency coefficients {0,1,2,..., n1}, having in mind that frequency indices in the second half of the dft correspond to the negative frequencies in the fourier series. then 362 lj. stanković 2 / 2 / 2 / 1 1 2 1 1 2 / 2 / 2 / 1 2 2 2 2 2 / 2 / 2 / 1 2 ... ... = ... ... ... ... ... j k n n j k n n j k n n k j k n n j k n n j k n n k j k n n j k n n j k n n m m k m e e e e e e e e e                        a . (8) this matrix is related to the idft matrix w with n samples in such a way that the rows corresponding to the time instants where the signal is not available are removed. the columns corresponding to the signal frequencies {k1, k2, ..., kk} are kept, while the other idft columns are removed. thus, the matrix a of order m  k is obtained from the idft of order n  n by removing row for time instants of unavailable signal samples and columns where the signal transform is zero-valued. if signal samples are chosen randomly then the reconstruction condition rank (a) = k could be satisfied if at least m = k. however it can happen that some instants, for given frequencies, produce dependent observations and that the full recovery is not possible. probability that we have sufficient number of independent equations is increased if the number of instants is increased. system (4) is used with k m n . therefore, by assuming that the positions of the nonzero coefficients in transformation domain are known, a system of m linear equations axk = y, (5), for available signal samples x(ti), i = 1,2,...,m, is solved for k unknowns xk, k  {k1, k2, ..., kk}. its solution, in the mean squared sense, follows from =h h ka ax a y 1( ) h k h x = a a a y. (9) if the dft values x(k) are used in vector xk instead of the fourier series coefficients xk then, using the relations xk n = x(k), the system of equations (5) reads 1 .k n ax = y special case 2 (oversampled signal): consider now a signal sampled with = / mt   but whose maximal frequency is = /k m t   . then, according to the sampling theorem, this is an oversampled signal. it is a special case of a sparse signal with ordered nonzero coefficients as 1 2 1 1 = { , ,..., } = {0,1,..., , ,... 2, 1}. 2 2 k k k k k k n n n     k in order to recover this signal it is sufficient to have a reduced set of samples. if the samples are not taken randomly (as it is done in compressive sensing) but at the instants ti = itn / k, where n / k is an integer, then the sampling step is tn / k. this corresponds to the signal downsampling with factor / 1n k , since k n . then with m = k and ni = in / k we get a special form of (8), relating the dft values and the discrete-time signal samples, as noises in randomly sampled sparse signals 363 2 / 2 ( 1)/ 2 ( 1)/ 2 ( 1)( 1)/ 1 1 ... 1 1 ...1 = . ... ... ... ... 1 ... j k j k k k j k k j k k k e e k e e                     x y this is an idft matrix with k samples. since this is an idft matrix of order k it satisfies the condition det(a)  0. in practice, excluding the sampling theorem cases with oversampled signals, the positions of the frequencies in a sparse signal are rarely known. two groups of the methods are derived to solve the problem. one is based on concentration measures [15] that are used to measure the signal sparsity. the problem is solved by minimizing the concentration measures subject to the condition that the signal values are known at some time instants. in this group the gradient based algorithms are commonly used, [7, 21]. the other group, that will be used here, is directly related to the presented theory of the system solution with known frequencies in the sparse signal. the first step in this class of methods is to estimate the positions of the signal frequencies and then in the next step to apply the presented simple approach to find the fourier transform coefficients at {k1, k2, ..., kk}. by finding the nonzero fourier transom coefficient values the signal recovery is achieved. 3. frequency positions estimation 3.1. random subset of uniformly sampling signal consider a sparse signal whose values are known at some of the possible sampling theorem defined positions tni = nit = nit /n with ni  {n1, n2, ..., nm}. the first step is to estimate the dft coefficients positions, using the available samples. it is done as 2 / { , ,..., } 1 2 ( ) = ( ) .j kn n n n n n m x k x n e    (10) with k m n the dft, calculated with m samples, is a random variable. for a sparse signal of the form =1 ( ) = exp( 2 / ), k p p p x n a j nk n the mean value of (10) is =1 { ( )} = ( ), k p p p e x k m a k k  while its variance is [13] 2 2 =1 ( ) = [1 ( )]. 1 k n p p p n m k a m k k n        (11) the variance is derived [13] in by using the condition that the sum (10) for =m n is =1 ( ) = ( ), k p p p x k m a k k  with 2 ( ) = 0n k . example: consider a three component signal 1 1 2 2 3 3( ) = exp( 2 / ) exp( 2 / ) exp( 2 / )x t a j k t n a j k t n a j k t n    (12) 364 lj. stanković with a1 = 1, a2 = 0.75, a3 = 0.25, , {k1, k2, k3} = {58,117,21}, within 0 256t  . with t = 1 and n = 257 the signal is sparse in the fourier domain. random realizations of the initial dft (10) are given in fig.1, for several values of the number of available samples m. we can see that a low value of m does not provide possibility to estimate the signal component positions. all three components are visible for larger values of m. when signal frequencies are detected then the signal is recovered using (9) with known time instants ti  {t1, t2,..., tm} (or in discrete-time domain ni  {n1, n2,..., nm}) and detected frequencies {k1, k2,..., kk}. obviously from a noisy observation of the dft we can distinguish two cases: 1) when the number of available samples is large and all components are above a threshold that can be calculated based on (11). then all signal frequencies will be distinguishable as peaks in the dft. 2) if the number of available samples is low or there are components with much lower amplitudes then the iterative procedure should be used. the largest component is detected and estimated first. it is subtracted from the signal. the next one is detected and the signal is estimated using the frequency from this and the previous step(s). the estimated two components are subtracted from the original signal. the frequency of next components is detected, and the process with estimation and subtraction is continued until the energy is negligible. both of these reconstruction cases are studied and described in [24]. 3.2. random subset of randomly sampled signal now consider the case when randomly positioned samples of a continuous-time signal within 0  t  t are available. the positions of the observations ti are not related to the sampling theorem positions in any way. an estimate of the initial dft can be calculated using the available signal values, as 2 / { , ,..., } 1 2 ( ) = ( ) . j kt t i i t t t t i m x k x t e    (13) fig. 1 dft of a signal with various number of available samples m. available m samples are a random subset of n samples taken according to the sampling theorem interval. red dots represent the original signal dft values, scaled with m / n to match the mean value of the dft calculated using a reduced set of samples signal. the dft values are presented as a function of the frequency index. noises in randomly sampled sparse signals 365 we will again assume that the signal is sparse with unknown number and positions of the frequencies {k1, k2, ..., kk}, k m n . for a frequency k = kp and the signal component exp( 2 / )p pa j k t t all values in (13) will be 2 /2 / = = .p i j kt tj k t t i p p k k p a e e a   therefore, the mean value of estimator (13) is =1 { ( )} = ( ). k p p p e x k m a k k  the variance of this estimator is different from the case when the available signal samples are at the sampling interval positions [13]. the condition that the value of the dft coefficient is zero (with zero variance) if all n samples are used, does not hold any more. the total variance is 2 2 =1 ( ) = 1 ( ) . k n p p p k a m k k     (14) for small m we have (n  m) / (n  1)  1. then expressions (11) and (14) give similar result. some of the random realizations of the initial dft (13) are given in fig. 2. in contrast to the previous case, the variance of the estimator (13) does not tend to zero as m approaches to n. however, we can see that the signal frequencies can be detected and used to recover the signal using (5) and (7) with known time instants ti  {t1, t2, ..., tm} and detected frequencies {k1, k2, ..., kk}. fig. 2 dft of a signal with various number of available samples m. available m samples are taken at random positions within 0  ti  t. red dots represent the original signal dft values, scaled with m / n to match the mean value of the dft calculated using a reduced set of samples signal. 366 lj. stanković 3.3. random subset of nonuniformly sampled signals consider now a random set of possible sampling instants {t1, t2, ..., tn}, = ,i it i t   where vi is a uniform random variable t / 2  vi  t/2. with  = 1 any position of the signal sample within it  t / 2  ti < it + t / 2 is equally probable. with   1 the sampling positions are random, but within one sampling interval only one signal sample can occur. this case will be referred to as nonuniform sampling. assume that only m < n signal samples are available at ti  {t1, t2, ..., tm}. in the nonuniform sampling case the initial dft estimate can be calculated using (13). this transform may be used to estimate the frequency positions. note that as in the random sampling case, even if we use m = n the resulting signal will not be sparse. this fact will degrade the recovery performance. the problem with nonuniform sampling can be reformulated to produce a uniformly sampled signal. if the signal values at ti are known then (2) can be used to recover the signal samples at the sampling theorem adjusted instants. this relation reads 1 =0 sin[( ) ] ( ) = ( ) . sin[( ) / ] n i n t n tx t x n t t n n n t         the transformation matrix relating samples taken at ti with the signal values at sampling theorem positions, is 1 11 12 1 2 21 22 2 1 2 ( ) ... (0) ( ) ... ( ) = ... ... ... ... ... ... ( ) ... (( 1) ) n n n n n nn x t b b b x x t b b b x t x t b a b x n t                                      x̂ = bx with sin[( ) ] = sin[( ) / ] i ij i t j tb t n j n t       an additional problem here is that we know just m  n of signal samples. the values at unavailable positions ti  {t1, t2, ..., tm} are assumed to be zero. their positions are assumed at the sampling theorem instants, ti = it for ti  {t1, t2, ..., tm}, since they are not known anyway. the uniform (sampling interval) signal values are then 1 11 12 1 1 21 22 2 2 1 2 ... ( )(0) ... ( )( ) = . ... ... ... ... ...... ... ( )(( 1) ) n n n n nn n b b b x tx b b b x tx t b a b x tx n t                                   (15) noises in randomly sampled sparse signals 367 the matrix b 1 is inverted only once for given signal sample positions. note that there is a direct relation to calculate the values x(nt) based on randomly sampled values x(ti) as [25]     11 =0=0 sin ( ) / ( ) = ( ) . sin ( ) / nn q p qp p p q p n t t n x n t x t t t n           here the inversion is not needed. however, in our calculation, this was not computationally more efficient approach. the results for several random realization and the nonuniform signal sampling, with recalculated signal values at the sampling theorem positions, are shown in fig. 3. as the number of available samples approaches to the total number of samples n the reconstructed dft is noise-free, fig. 3. fig. 3 dft of a signal with various number of available samples m. available m samples are a random subset of n nonuniform samples taken at random positions within the sampling theorem interval. red dots represent the original signal dft values, scaled with m / n to match the mean value of the dft calculated using a reduced set of samples signal. for all previous reconstruction cases and the signal defined by (12) the variance is calculated in 100 random realizations of the sets of available samples. the results for the variance is presented in fig. 4. the ratio of signal and noise energies is calculated as well and presented in fig.5. agreement of the theory and the statistical results is high. from fig.4 we can conclude that the recalculation is not efficient for a small number of available samples, when m n . in that case even worse results are obtained than without recalculation, what could be expected. for a large number of available samples (in fig.4 for m > 5n / 8) the recalculation produces better results, approaching to the sparse signal without any deviation, for n = m. 368 lj. stanković fig. 4 variance of the dft for all previous methods of sampling and various number of available samples m. (1)-line with marks "x": available samples are a subset of all samples taken at the sampling theorem grid (solid line-theory, marks "x"-statistics). (2)-line with marks "o": randomly positioned m samples taken within 0  ti  t (solid line-theory, marks "o"-statistics). (3)-marks "+": nonuniform randomly shifted samples from the sampling theorem grid. (4)-marks "*": nonuniform randomly shifted available samples being recalculated on the sampling theorem grid. fig. 5 ratio of the signal and dft noise energies for all previous methods of sampling and various number of available samples m. (1)-line with marks "x": available samples are a subset of all samples taken at the sampling theorem grid (solid line-theory, marks "x"-statistics). (2)-line with marks "o": randomly positioned m samples taken within 0  ti  t (solid line-theory, marks "o"-statistics). (3)-marks "+": nonuniform randomly shifted samples from the sampling theorem grid. (4)-marks "*": nonuniform randomly shifted available samples being recalculated on the sampling theorem grid. noises in randomly sampled sparse signals 369 4. additive noise influence next we will analyze the case when input noise exists in the sparse signal to be reconstructed. it has been shown that this kind of noise increases the variance caused by missing samples. a formula how to increase the number of available samples in order to compensate the influence of input noise is derived as well [24]. it is important to note that once the reconstruction conditions are meet and the reconstruction is achieved, the noise due to missing samples does not influence the results in a direct way. it influences the possibility to recover signal at all. the accuracy of the recovery results is related to the input noise. the input noise is transformed by the recovery algorithm into a new noise depending on the signal sparsity and the number of available samples. a simple analysis of this form of noise will be presented next. assume an additive noise  (t) in the input signal. the reconstruction equations (4) are 2 / ={ , ,..., } 1 2 ( ) ( ) = ,for = 1,2,..., j kt t i i i k k k k k k x t t x e i m    at the available instants ti, i = 1,2,...,m, for detected frequencies k = {k1, k2, ..., kk}. in a matrix form this system of m linear equations with k unknowns reads = ky ax the solution follows form ( ) =h h ka y a ax 1= ( ) ( )h h k  x a a a y =k ks knx x x (16) where 1= ( )h h ks  x a a a y are the true signal coefficient values and 1= ( )h h kn  x a a a is the noise influence to the reconstructed signal coefficients. the input signal-to-noise (snr) ratio, if all signal samples were available, is 1 2 =0 1 2 =0 ( ) = 10log = 10log . ( ) n n n x i n n n x t e snr e t      assume the noise energy in m samples used in reconstruction is 2 { , ,..., } 1 2 = ( ) . m a i t t t t i m e t    (17) using (10) in calculation is the same as assuming that the values of unavailable samples is zero. this kind of calculation corresponds to the result that would be achieved for the signal transform if the norm-two, i.e., min 1 2 =0 ( ) n k x k   , is used in minimization, [21, 370 lj. stanković 3, 6, 23]. the correct amplitude in the signal transform at the frequency kp, in the case if all signal samples were used, would be nap. to compensate the resulting transform for the known bias in amplitude when only m available samples are used we should multiply the coefficient by n / m. it means that is a full recovery, a signal transform coefficient should correspond to the coefficient of the original signal with all signal samples being used. the noise in the transform coefficients will also be multiplied by the same factor. therefore, its energy would be increased to ea n 2 / m 2 . the signal-to-noise ratio in the recovered signal would be 1 2 =0 2 2 2 { , ,..., } 1 2 ( ) = 10log ( ) n n n i t t t t i m x t snr n t m      (18) if the distribution of noise in the samples used for reconstruction is the same as in other signal samples then 2 2 { , ,..., } 1 2 | ( ) | =i t t t t i m t m     and 1 2 =0 2 2 2 ( ) = 10log n n n x t snr n m m    (19) = 10log .i n snr m        (20) therefore, a signal reconstruction that would be based on the initial estimate (10) would worsen snr, since n > m. an improvement can be expected only if we were able to remove the noisy samples in a selective manner so that the samples used in reconstruction are less noisy than the other samples, [23]. if such a criterion is used to selectively remove the noise samples then the reconstruction is improved if 2 1 2 2 2 { , ,..., } =0 1 2 ( ) < ( ) . n i n t t t t n i m n t t m       since only k out of n dft coefficients are used in the reconstruction the energy of the reconstruction error is reduced for the factor of k / n as well. therefore, the energy of noise in the reconstructed signal is 2 2 2 { , ,..., } 1 2 = ( ) .r i t t t t i m k n e t n m     the final signal to noise ratio in the reconstructed signal is 1 2 =0 2 2 { , ,..., } 1 2 ( ) = 10log . ( ) n n n i t t t t i m x t snr kn t m      (21) noises in randomly sampled sparse signals 371 if a criterion of selection the noisy samples is used then the variance in the remaining samples is lower than the average variance of all samples, i.e., 2 { , ,..., } 1 2 1 2 =0 1 ( ) = 1 ( ) i t t t t i m qn n n t m c t n       (22) where 0 1qc  is the criterion selection efficiency:  if there is no any criterion cq = 1.  in an ideal case when the noise does not exists in the remaining samples (removed by a criterion or l-statistics as in [3]) then cq = 0. with this factor the snr is = 10log .i q k snr snr c m        (23) this simple theoretical result is tested on signal (12) with additive noise of variance  2  = 1. for a random set of m available samples the initial dft is calculated using (10). since a large number of available samples m is used in these simulations the signal components {k1, k2, k3} are easily detected in one step. the signal is reconstructed by (9) for the set of available signal samples y = [x(t1) x(t2) ... x(tm)] t and the detected frequencies {k1, k2, k3}. for statistical check of the results, 100 random realizations of the available sample positions are used. the results are summarized in table 1 for a different number of available sampels m, with cq = 1. the theory agreement with statistics is very high. for smaller values of m the iterative procedure (described in the last paragraph of subsection 3.1) should be used since all components can not be detected in a single realization of (10). similar results would be obtained as far the value of available sample is sufficient for signal recovery. table 1 signal to noise ratio: in the input signal (snri), obtained by theory (snrt) and by statistics (snrs) for various number of available samples m with n=257. snr in [db] =128m =160m =192m = 224m snri 2.6383 2.6215 2.5663 2.5811 snrt 18.8837 19.8519 20.6446 21.3140 snrs 18.8709 19.8528 20.6415 21.3887 in order to test the change of ,k the theory is illustrated on a four component signal 1 1 2 2 3 3 4 4 ( ) = exp( 2 / ) exp( 2 / ) exp( 2 / ) exp( 2 / ) ( ) x t a j k t n a j k t n a j k t n a j k t n n          as well. the amplitudes in this case where a1 = 1, a2 = 0.75, a3 = 0.5, a4 = 0.67, and the frequency indices {k1, k2, k3 k4} = {58,117,21,45}. the results are presented in table 2. 372 lj. stanković table 2 signal to noise ratio: in the input signal (snri), obtained by theory (snrt) and by statistics (snrs) for various number of available samples m with n=257. snr in [db] =128m =160m =192m = 224m snri 3.5360 3.5326 3.5788 3.5385 snrt 18.5953 19.5644 20.3562 21.0257 snrs 18.7203 19.5139 20.2869 21.7302 the agreement of the numerical statistical results with this simple theory in analysis of noise influence to the reconstruction of sparse signals is high. 5. conclusion analysis of random samples sparse signals is preformed. it has been shown that random sampling increases noise in the reconstructed caused by unavailable samples. for a relatively large number of available samples the signal recalculation of nonuniformly sampled signals to the sampling theorem grid can improve the results. the input noise can degrade the reconstruction limit. however as far as the reconstruction is possible the noise caused by missing samples manifests its influence to the results accuracy in simple and direct way trough the number of missing samples and signal sparsity. the accuracy of the final result is related to the input noise intensity, number of available samples and the signal sparsity. the theory is checked and illustrated on numerical examples. references [1] d. l. donoho, “compressed sensing,” ieee transactions on information theory, vol. 52, no. 4, pp. 1289–1306, 2006. [2] e. j. candès, j. romberg, and t. tao, “robust uncertainty principles: exact signal reconstruction from highly incomplete frequency information,” ieee transactions on information theory, vol. 52, no. 2, pp. 489–509, 2006. [3] l. stanković, i. orović, s. stanković, and m. g. amin, “robust time-frequency analysis based on the lestimation and compressive sensing,” ieee signal processing letters, may 2013, pp. 499–502. [4] r. e. carrillo, k. e. barner, and t. c. aysal, “robust sampling and reconstruction methods for sparse signals in the presence of impulsive noise,” ieee journal of selected topics in signal processing, 2010, 4(2), pp. 392–408. [5] l. stanković, m. daković, and t. thayaparan, time–frequency signal analysis with application, artech house, 2013. [6] l. stanković, s. stanković, i. orović, and m. g. amin, “compressive sensing based separation of nonstationary and stationary signals overlapping in time-frequency, ”ieee transactions on signal processing, vol. 61, no. 18, pp. 4562–4572, sept. 2013 [7] m. a. figueiredo, r. d. nowak, and s. j. wright, “gradient projection for sparse reconstruction: application to compressed sensing and other inverse problems,”ieee journal of selected topics in signal processing,, vol. 1, no. 4, pp. 586–597, 2007. [8] d. donoho, m. elad, and v. temlyakov, “stable recovery of sparse overcomplete representations in the presence of noise,” ieee transactions on information theory, vol. 52, pp. 6–18, 2006. [9] b. turlach, “on algorithms for solving least squares problems under an l1 penalty or an l1 constraint,” proc. of the american statistical association; statistical computing section, pp. 2572–2577, alexandria, va, 2005. [10] r. baraniuk, “compressive sensing,” ieee signal processing magazine, vol. 24, no. 4, 2007, pp. 118–121. [11] p. flandrin and p. borgnat, “time-frequency energy distributions meet compressed sensing,” ieee transactions on signal processing, vol. 58, no. 6, 2010, pp. 2974–2982. noises in randomly sampled sparse signals 373 [12] y. d. zhang and m. g. amin, “compressive sensing in nonstationary array processing using bilinear transforms," in proc. ieee sensor array and multichannel signal processing workshop, hoboken, nj, june 2012. [13] l. stanković, s. stanković, and m. g. amin, “missing samples analysis in signals for applications to lestimation and compressive sensing”, signal processing, elsevier, volume 94, jan. 2014, pages 401–408. [14] s. aviyente, “compressed sensing framework for eeg compression”, in proc. stat. sig. processing, 2007, aug. 2007. [15] l. stanković, “a measure of some time–frequency distributions concentration,” signal processing, vol. 81, pp. 621–631, 2001 [16] n.b. karahanoglu and h. erdogan, ” compressed sensing signal recovery via forward–backward pursuit”, digital signal processing, vol.23, issue 5, sept. 2013, pages 1539–1548. [17] s. stanković, i. orović, and e. sejdić, multimedia signals and systems, springer, 2012. [18] e. sejdić, a. cam, l. f. chaparro, c. m. steele, and t. chau, “compressive sampling of swallowing accelerometry signals using tf dictionaries based on modulated discrete prolate spheroidal sequences,” eurasip journal on advances in signal processing, 2012:101 doi:10.1186/1687–6180–2012–101. [19] s. g. mallat and z. zhang, “matching pursuits with time-frequency dictionaries,” ieee transactions on signal processing, vol. 41, no. 12, pp. 3397–3415, 1993. [20] i. daubechies, m. defrise, and c. de mol, “an iterative thresholding algorithm for linear inverse problems with a sparsity constraint,” communications on pure and applied mathematics, vol. 57, no. 11, pp. 1413– 1457, 2004. [21] l. stanković, m. daković, and s. vujović, “adaptive variable step algorithm for missing samples recovery in sparse signals,”iet signal processing, in print, 2014 (first version available on arxiv.org/abs/1309.5749). [22] l. stanković, m. daković, and s. vujović, “concentration measures with an adaptive algorithm for processing sparse signals,” in proceedings of ispa 2013, sept. 4–6, 2013, trieste, italy, pp. 418–423. [23] l. stanković, m. daković, and s. vujović, “reconstruction of sparse signals in impulsive noise", ieee transactions on signal processing, submitted (first version available on arxiv.org) [24] s. stanković, i. orović, and l. stanković, "an automated signal reconstruction method based on analysis of compressive sensed signals in noisy environment", signal processing, elsevier, volume 94, in print. [25] e. margolis and y.c. eldar, "nonuniform sampling of periodic bandlimited signals," ieee transactions on signal processing, vol.56, no.7, pp.2728,2745, july 2008. plane thermoelastic waves in infinite half-space caused facta universitatis series: electronics and energetics vol. 30, no 3, september 2017, pp. 327 350 doi: 10.2298/fuee1703327g modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits ­ a review  francisco j. garcía-sánchez 1,2 , beatriz romero 1 , denise c. lugo-muñoz 2,3 , gonzalo del pozo 1 , belén arredondo 1 , juin j. liou 3 , adelmo ortiz-conde 2 1 superior school of experimental science and technology (escet), rey juan carlos university (urjc), móstoles, madrid 28933, spain 2 solid state electronics laboratory (lees), simón bolívar university (usb), caracas 1080a, venezuela 3 emoat, llc, 1933 ayrshier place., oviedo, fl 32765, usa abstract. this article reviews and appraises the dc lumped-parameter equivalent circuit models that have been proposed so far for representing some types of solar cells that can exhibit under certain circumstances a detrimental s-shaped concave deformation within the energy-producing fourth quadrant of their illuminated i–v characteristics. we first present a very succinct recollection of lumped-parameter equivalent circuits that are commonly used to model conventional solar cells in general. we then chronologically present and discuss lumped-parameter equivalent sub-circuits that, combined with conventional solar cell equivalent circuits, are used to specifically represent the undesired s-shaped behaviour. the mathematically descriptive equations of each complete equivalent circuit are also examined, and closed form solutions for the terminal current and voltage as explicit functions of each other are presented and discussed whenever available. while comparing the most salient features and explaining the practical advantages and disadvantages of such equivalent circuit models, we offer some comments on possible directions for further improvement. key words: solar cell lumped-parameter equivalent circuit modelling, solar cell concentrated-element equivalent circuit models, s-shaped current-voltage characteristics, s-shape kink, organic solar cells, lambert w function received february 19, 2017 corresponding author: francisco j. garcía-sánchez solid state electronics laboratory (lees), simón bolívar university (usb), caracas 1080a, venezuela (e-mail: fgarcia@ieee.org) 328 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. 1. introduction the process of designing practical photovoltaic applications calls for the availability of dc lumped-parameter equivalent circuit models as simple as possible to compactly describe the solar cells’ electric behaviour represented by their terminals’ current–voltage (i-v) characteristics, measured in the dark and under standard illumination conditions. solar cell lumped-parameter (or concentrated-element) equivalent circuit models ignore the spatial distribution of the electrical mechanisms present, and instead assume that they are concentrated and represented by certain idealized passive and active lineal and nonlineal electrical components, typically resistors, capacitors, inductors, diodes, and current voltage sources, located at certain positions in an electrical network. under steady state (dc) conditions neither inductors nor capacitors are used. such simple equivalent circuits constitute essential tools for photovoltaic systems simulation, as well as for the important task of advancing basic and applied research and technological development of emerging solar cells’ materials, structures, and fabrication techniques. most well-established conventional solar cells under illumination exhibit the type of generic i-v characteristics that can be satisfactorily represented under steady state by the equivalent electrical behaviour of some of the conventional dc lumped-parameter circuit models that are shown in fig.1 [1]. however, there are innovative developmental or still experimental solar cells, such as some of those based on binary and ternary compound semiconductors, non-crystalline hetero-junctions [2], novel silicon quantum dot solar cells [3], others based on perovskite semiconductors [4-6], and most notably organic semiconductor-based solar cells [7-9], that might exhibit under certain circumstances undesirable deformations of their illuminated i-v characteristics that impair their energy conversion capacity. the main feature of such apparent anomaly becomes evident when the solar cell’s i-v characteristics under illumination present a peculiar concave shape within the fourth quadrant (the power generating quadrant); instead of exhibiting the normally expected, so-called “j” type conventional convex shape. this deformation of the illuminated i-v curve is commonly referred to as the s-shape “kink” of the i-v characteristics [10]. the presence of such bend seriously reduces the solar cell’s fill factor by depressing the location of the maximum power point, and thus represents a serious impairment for the cell’s power conversion efficiency that must be avoided, minimised or suppressed [7, 11]. in the sections that follow we offer a chronological perspective view of the most relevant dc lumped-parameter equivalent circuit models that have been proposed to date, for specifically describing in a compact way this adverse s-shaped behaviour observed in the illuminated i-v characteristics of some otherwise promising solar cells. 2. solar cell equivalent circuit models the simplest possible mathematical description of the i-v characteristics at the terminals of any conventional solar cell measured under illumination conditions consists of adding a photo-generated current to the well known shockley’s ideal diode current equation [12]. the equation resulting from adding these two terms is an explicit compact model of the terminal current expressed as an exponential function of the terminal voltage. this simplest mathematical description of a solar cell electrical behaviour under modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 329 illumination represents a corresponding dc lumped-parameter equivalent circuit model that consists of the parallel combination of a diode and an illumination-dependent current source, as portrayed in fig. 1(a). such descriptive mathematical representation is practically appealing, not only because of its compactness, but also because its explicit nature allows it to be easily inverted and numerically calculated. unfortunately, this simplest model usually falls short of adequately describing all the relevant electrical phenomena that must be considered for solar cell development and photovoltaic system simulation and design. thus, the corresponding very basic dc lumped-parameter equivalent circuit model shown in fig. 1(a) is often deemed to be not accurate enough to be of practical use. 2.1. conventional dc lumped-parameter circuit models the basic equivalent circuit model is modified to offer a more realistic representation, by including other elements, especially parasitic resistors added as lumped elements connected both in series and/or in parallel to account for the possible presence of significant ohmic losses, as indicated in figs. 1(b), (c) and (d). similarly, and in order to be able to better account for the possible presence of more than one significant junction conduction mechanism, the equivalent circuit might also need to include more than one diode connected in parallel with the photo-current source, as presented in fig. 1(e). relevant lumped parameters potentially introduced in these more complex equivalent circuit models, in addition to the value(s) of the series rs and shunt rp=1/gp resistors, are the magnitudes i01 , i02,... of the reverse saturation current(s) and the corresponding value(s) of the junction ideality factor(s) n1, n2,... of the possible multiple diodes needed. a b c d e fig. 1 typical generic solar cell dc lumped-parameter equivalent circuit models showing the photo-generated current source with: (a) a single ideal diode in parallel; (b) plus a series resistance; (c) plus a parallel conductance; (d) plus both series resistance and parallel conductance; and (e) several ideal diodes plus a series resistance. 330 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. the parameters that may be used are supposed to bear direct associations to relevant fundamental microscopic physical features and phenomena actually present in the real solar cell to be modelled. the various circuit elements added to the basic dc equivalent circuit model of fig. 1(a) undoubtedly improve the model’s descriptive fidelity. however, their presence, as shown in figs. 1(b), (c), (d) and (e) also fundamentally complicates the mathematical handling of the resulting descriptive i-v equations. because of them the basic equation ceases to be explicit to become an implicit transcendental equation. from the point of view of photovoltaic system simulation and solar cell model parameter extraction through curve fitting, being transcendental is an undesirable trait of the descriptive equations. except in very few specific cases, they cannot be explicitly solved for the terminal current as a function of the terminal voltage, and vice versa, using only elementary functions. 2.2. conventional models’ mathematically descriptive equations and their solutions luckily, there is the lambertw function, which we will refer to here as w for short. this function comes in very handy for explicitly solving equations which are made up of both linear and exponential terms, such as those equations that describe the circuits of figs. 1(b), (c), and (d). this special function w, whose utility was ignored to a large extent until not long ago, may be succinctly defined as the solution to the generic linear-exponential equation: z = w(z) e w(z) , where z is any complex number [13, 14]. around the turn of this century the use of w started to become an accepted and increasingly ubiquitous tool for solving various important problems of physics [15, 16]. the problems newly solved by using w prominently include important areas related to semiconductor physics, such as electronic devices and circuits, where linear-exponential type of equations abound since they play essential roles in describing the underlying phenomenology. numerical calculation of w is relatively transparent nowadays, since various methods exist to quickly compute the principal w0(z) and other branches of w. additionally, efficient algorithms are routinely implemented in most major mathematical software packages, physics and device modelling tools, and circuit simulation systems. at the turn of the century two seminal works dealing with the use of w in the field of electronic circuit problems were published in the year 2000. one was an exact w-based analytical solution, proposed by banwell and jayakumar [17], of the terminal current i as an explicit function of the terminal voltage v for shockley’s modified equation [12]. it describes a circuit consisting of the series combination of a single diode and a lone resistor rs (similar the circuit of fig. 1(b) less the current source) which is expressed as: 0 exp 1s th v ir i i nv            , (1) where i0 is the reverse saturation current of the diode, vth = kbt/q is the thermal voltage and n is the so-called diode ideality factor, which describes how much the diode’s junction carrier transport mechanisms deviate from supposedly “ideal” behaviour (n=1). the exact w-based analytical solution of the terminal current as an explicit function of the terminal voltage presented by banwell and jayakumar is [17]: modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 331 0 0 0 0expth s s s th th nv i r v i r i w i r nv nv            . (2) because only a series-connected resistor was assumed to be involved in this problem, just the terminal current i needs be explicitly solved using w; whereas the terminal voltage v can be directly expressed as an explicit function of the terminal current using the natural logarithm elementary function: 0 0 lnth s i i v nv ir i        . (3) the other contemporaneous turn of the century seminal work about the use of w in the field of electronic circuit problems was published by ortiz-conde et al also in 2000 [18]. it was more comprehensive in the sense that it also contemplated the presence of significant shunt conductance gp=1/rp. this seminal work presented the derivation of the two exact w-based analytical solutions for both the terminal current and the terminal voltage as explicit functions of each other, of the transcendental equation corresponding to the circuit composed of a single diode and both seriesand shunt-connected resistors, rs and rp, respectively (similar to the circuit of fig. 1(d) less the current source). shockley’s modified terminal current equation in this case has an extra implicit term that accounts for the additional shunt conductance: 0 exp 1s s th p v ir v ir i i nv r              . (4) the explicit w-based closed form analytic solutions for both i and v as explicit functions of each other, as presented by ortiz-conde et al [18] are, for the current: 0 0 0 0 exp ( 1) ( 1) ( 1) th s s s s s th s p th s p s s p nv i r v i r v i rv i w r r nv r g nv r g r r g                , (5a) or 0 0 0 0 ( 1) ln exp ( 1) ( 1) th th s p s s s s s th s p th s p nv nv r g i r v i rv i w r r i r nv r g nv r g                    ; (5b) and for the voltage: 0 0 0 0 exps th th p th p p i i i i i v ir nv w nv g nv g g              , (6a) or 0 0 0 0 ln expth p s th th p th p nv g i i i v ir nv w i nv g nv g                  . (6b) it might be noticed that eliminating the shunt conductance loss (letting gp=1/rp 0) does revert (5) back into (2), as it should, but does not allow to directly convert (6) into (3). 332 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. four years after the publication of these two important seminal works about how to use w to derive exact explicit solutions for both i and v of a circuit consisting of a (dark) diode with seriesand parallel resistors, jain and kapoor illuminated in 2004 the previously dark circuit model by adding in parallel with the diode a current source of a photo-generated intensity iph [19]. by so doing, the previously dark circuit became the illuminated solar cell equivalent circuit model shown in fig. 1(d). the new constant current concisely represents the photo-current iph generated by the transport and collection of separated charge carriers that are photo-generated within the cell’s body by the absorption of sufficiently energetic incoming photons that penetrate through the diode’s illuminated surface (now a photovoltaic diode). this photo-current must be inserted as an additional constant current term into the descriptive equation (4), so that now under illumination (4) becomes: 0 exp 1s s ph th p v ir v ir i i i nv r               . (7) the addition of the constant to transcendental eq. (4) does not alter the manner eq. (7) is solved, which remains the same as it was for eq. (4) [18]. the resulting exact w-based analytical solutions for both the terminal current and the terminal voltage, as explicit functions of each other, published in 2004 by jain and kapoor [19], are similar to eqs. (5) and (6), except for the presence of the added iph term. for the current: 0 00 0 ( ) ( ) exp ( 1) ( 1) ( 1) ph s ph sth s s s th s p th s p s s p v i i r v i i rnv i rv i w r r nv r g nv r g r r g                   , (8a) or 00 0 0 ( )( 1) ln exp ( 1) ( 1) ph sth th s p s s s s th s p th s p v i i rnv nv r g i rv i w r r i r nv r g nv r g                     ; (8b) and for the voltage, 0 00 0 exp ph ph s th th p th p p i i i i i ii v ir nv w nv g nv g g                 , (9a) or 00 0 0 ln exp phth p s th th p th p i i inv g i v ir nv w i nv g nv g                    . (9b) therefore, having inserted the additional photocurrent term iph into eqs. (5) and (6), they have become the w-based solutions (8) and (9) which explicitly describe the electric behaviour of illuminated solar cells with significant series and shunt parasitic resistances. it is interesting to check that turning the light off (by letting iph0) reverts eqs. (8) and (9), as they should, back into the original eqs. (5) and (6), respectively. one year later, in 2005, jain and kapoor directly used these same w function-based solutions, corresponding to the conventional solar cell lumped-parameter equivalent circuit model of fig. 1(d), to study organic solar cells [20]. modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 333 in addition to a significant presence of both series and shunt parasitic resistances, sometimes it is evident in the measured i-v characteristics of the solar cell the presence of more than one significant conduction mechanism. in such cases multiple-diode equivalent circuit models are called for. they contain more than just one diode in parallel with the photocurrent source, as shown in fig. 1(e). consequently, the corresponding equations turn out to be of a multi-exponential nature and, thus, are in general more difficult, or even impossible, to solve exactly in an explicit form. regardless of the difficulty, such type of multiple-diode equivalent circuits must be used whenever the presence of multiple junction conduction mechanisms must be adequately described because their relative significance so demands [21, 22]. for a complete review of the existing literature about generic solar cell dc lumpedparameter equivalent circuit models and their corresponding equations, solutions, and methods for numerically extracting their parameters, see refs. [1, 23-26] and the references cited therein. although most solar cells can be adequately described by one of the just mentioned generic lumped-parameter equivalent circuit models, some researchers still prefer to use other models that are specifically intended for particular types of solar cells. for example, j. w. jin, et al recently published a universal compact model for organic solar cells, which consists of individually describing three different regimes of operation and then combining their mathematical descriptions into a single equation [27]. unfortunately, even that universal model for organic solar cells is not capable of describing the concave s-shaped behaviour occasionally exhibited by the illuminated i-v characteristics of organic solar cells. in fact, none of the just described conventional dc lumped-parameter equivalent circuit models seem to be capable by itself of properly modelling the occurrence of the undesirable s-shaped behaviour observed in the illuminated i-v characteristics of several types of solar cells [28, 29]. consequently, more suitable specialized circuit models need to be introduced to specifically represent the s-shaped kink. in the following sections we will analyse the issue of how to best describe, through other dc lumped-parameter equivalent circuit models, the harmful s-shaped deformation of the illuminated i–v characteristics, whose presence might seriously spoil the energy conversion performance of solar cells, especially but not exclusively those of organic solar cells [7]. 3. the s-shape kink as already mentioned above, some promising important types of solar cells can, and do, under certain circumstances exhibit the undesirable s-shaped concave deformation of their illuminated i-v characteristics. the s-shape kink is most evident in the fourth quadrant, where it can seriously reduce the fill factor, and thus, impair the solar energy conversion efficiency of the device. therefore when this is the case, corrective or palliative measures must be adopted to avoid or suppress the emergence of this detrimental kink. many researchers have proposed several explanations of the probable causes of this sshaped concavity, but its origins are still not totally clear. materials-related charge transport restrictions and charge accumulation-related interface phenomena, which alter the distribution of the solar cell’s internal electric field are generally regarded to be mainly 334 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. responsible for the occurrence of the s-shaped kink [5, 7, 11, 30-33]. in organic solar cells, misaligned metal work functions and selective blocking contacts can produce injection barriers, and insulating interfacial layers between the metal and the active layers can produce extraction barriers, both of which might produce the fatidic s-shape [34]. similar more or less pronounced s-shapes also can be observed in the measured characteristics of many types of experimental and developmental photovoltaic devices. for example, transient forward, or even reverse, i−v sweeps of perovskite semiconductorbased solar cells, where both ion migration and mobile charge trapping seem to cause undesirable scan direction-dependent hysteresis in their illuminated i-v curves [4, 5]. the same kind of s-shaped kink also has been observed in a-si/c-si hetero-junction solar cells at certain temperature and illumination levels [2]. other types of emerging more exotic photovoltaic devices display this type of detrimental behaviour. that is the case, for example, of the novel experimental ultra-thin photovoltaic cells made with van der waals force-bonded hetero-structures containing atomically thin layers of semiconducting transition metal dichalcogenides (such as mos2, ws2 and wse2) [35]. their illuminated i-v curves also exhibit detrimental s-shaped deformations that need to be suppressed for this attractive type of device to ever achieve usable energy conversion efficiency levels. it is, therefore, essential to identify the possible origins of the s-shape kink if we pretend to avoid or diminish it. thus, identifying and understanding the origin(s), as well as quantifying their influence on the s-shape kink’s emergence, growth or suppression, becomes a crucial task for optimising the design of such solar cells. this goal may be conveniently achieved through the introduction of additional lumped elements into an existing conventional solar cell equivalent circuit model, to modify it so that it may electrically account for the full range of illuminated i-v characteristics, especially including the s-shaped kink behaviour. this was kind of analysis followed by l. zuo, et al, among others, for investigating the origin of the s-shaped kink in the i-v characteristics of organic solar cells [36], who use an equivalent circuit model approach [37] as a tool for analysis. the object of study then becomes the evolution of the solar cell’s i-v characteristics experimentally measured under different operating conditions (illumination intensity, temperature, etc), or in response to adjustments in material composition, morphology, structural design and fabrication specifications, etc. the analysis of how the equivalent circuit’s lumped-elements’ parameter values (as extracted by fitting the model’s equations to the measured data) change in response to modifications of the conditions, can be used as a powerful tool to scrutinise and understand the causes of the s-shape kink, and, thus, to learn how it may be best suppressed. 4. equivalent circuit modelling of the s-shape kink many solar cells unfortunately exhibit this undesirable s-shaped “kink” visibly in the fourth quadrant of their illuminated i-v characteristics. since the kink cannot be described using only the conventional dc lumped-parameter equivalent circuit models shown in fig. 1, and discussed in the preceding sections, ancillary circuits have been proposed for over a decade [28, 29]. the additional lumped elements must be incorporated together with a modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 335 conventional dc lumped-parameter equivalent circuit model to offer an overall description of the illuminated i-v characteristics. 4.1. model by b. mazhari (2006) as early as 2006 mazhari already understood the incapacity of stand-alone existing conventional dc lumped-parameter equivalent circuit models for properly describing the measured i-v characteristics of some illuminated organic solar cells [38]. he suggested that the commonly held hypothesis that the photo-current of organic solar cells remains essentially constant throughout the whole fourth quadrant (00; v>voc), where the current yielded by this model is needlessly forced to level off, following a general trend imposed to a great extent by the i-v locus of rp2 (see dashed blue lines in fig. 6). the reason is that in this model shown fig. 3 the first quadrant is primarily dominated, for large forward voltages >>voc, by the linear parallel resistor rp2, and thus, the i–v curve turns out to be quasi-linear. instead, what seems to actually happen in real cells that exhibit these s-shape kinks, is that their i-v characteristic when measured under illumination in the first quadrant beyond the open circuit voltage (i>0; v>voc) at some point start to describe an upward turn and continue to grow in what appears to be an exponential-like fashion [7, 30, 31, 33]. this circuit has been successfully applied in different experiments that involve sshaped removal with annealing [43] and uv soaking [46], and it has been validated with impedance measurements and ac modeling [47]. fig. 4 dc lumped-parameter equivalent circuit model proposed by gaur and kumar [29] to describe the i-v characteristics of polymer solar cells under dark conditions. it looks almost like a conventional double diode with series and shunt resistances model, except that the diodes have opposite polarities. 4.3. model by gaur and kumar (2013) in 2013 kumar and gaur [28, 29] proposed an improved equivalent circuit model to represent the behaviour of polymer solar cells under different environmental conditions. modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 339 the proposed model does not result in a single compact formulation. the actual equivalent circuit turns out to be very complex and contains many circuit elements. the main reason for this is that the model itself separately treats the dark and illuminated characteristics, and even forward and the reverse characteristics are dealt with separately. the proposed dark equivalent circuit is a parallel combination of a shunt resistor and two diodes connected with opposite polarity, all connected in series with a series resistor, as presented in fig. 4. the dc equivalent circuit proposed to represent the i–v characteristics under illumination is based on the chief assumption that he photo-current is not constant but varies with applied voltage. it contains the dark circuit elements plus: a zener diode, up to four more diodes, two photo-generated current sources, and additional unconventional resistors. it is shown in fig. 1(b) of [28] and fig. 7 of [29], but it is too complex to be of any practical use to reproduce here. although this model allowed kumar and gaur to understand the phenomenology of degraded p3ht: pcbm polymer solar cells, its complexity is such that it is not suggested as a practical compact equivalent circuit model to efficiently represent in general the sshaped concave deformations that are observed under illumination in the i-v characteristics of some types of solar cells. 4.4. model by f. j. garcía-sánchez et al (2013) to deal with the inability of the model by araujo de castro et al [10] shown in fig. 3 to faithfully model real measured i-v data far beyond voc, a minor but crucial modification was introduced in 2013 by garcía-sánchez et al [48]. the improvement affects the sub-circuit#2i part of the proposed equivalent circuit model diagram presented in fig. 5. fig. 5 the solar cell dc lumped-parameter equivalent circuit model proposed by garcíasánchez et al [48] to allow describing the s-shaped kink. it includes the same conventional single ideal diode with series and shunt resistances as before (subcircuit #1), but the series-connected sub-circuit #2 has been modified to replace the previous resistor rp2 by a third diode connected with reversed polarity, the same as that of the diode of sub-circuit #1. 340 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. as in the model by araujo de castro et al [10], to reproduce the s-shaped concave region up to about the open circuit voltage (i<0; 00; v>voc). the substitution of the parallel resistor rp2, by the third diode modifies the current through sub-circuit#2i, which now is: 2 2 02 03 2 3 exp 1 exp 1 th th v v i i i n v n v                             . (18) as before, we can write the solution for this equivalent circuit’s terminal voltage v as a function of the terminal current i adding the voltage drop irs across the series resistor rs and the voltages v1 and v2 across the terminals of each of its two sub-circuits, as in (13) which is repeated here: 1 2sv ir v v   . (19) however, now v2 must be obtained by solving (18), and that solution is not explicit in general. it has close form w-based explicit solutions in some particular cases: that both ideality factors n1 and n2 are equal, or that one is twice as large as the other [48]. otherwise, in general (18) would have to be solved numerically or approximately for the terminal voltage v2. this is, of course, the price that must be paid for having a model with two diodes connected in parallel. to illustrate the difference the addition of diode 3 makes regarding the description of the observed upturn of the illuminated i–v curve for i>0; v> voc, we present in fig. 6 in in linear and semi-logarithmic scales the synthetic i-v characteristics of a hypothetical solar cell under illumination, as generated by numerical calculation using the two dc lumped-parameter equivalent circuit models (depicted in figs. 3 and 5), with suitable parameter values indicated in the inset of fig. 6 (b). notice that in this particular example the two ideality factors n1 and n2 were chosen to have equal values, so that the solution for v2 turns out to be explicit [48]. therefore the terminal voltage v calculated from (19) is also an explicit function of the terminal current. as can be seen in fig. 6, the equivalent circuit models of figs. 3 and 5 adequately describe, as expected, the s-shaped kink in the fourth quadrant of the illuminated i–v characteristics (i<0; 00; v>voc). modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 341 fig. 6 comparison of the s-shaped kinks in two synthetic illuminated i-v characteristics, presented in linear (a) and semi-logarithmic (b) scales, as generated by the dc lumped-parameter equivalent circuit models shown in figs. 3 and 5, using the parameter values indicated within the lower pane (dotted black lines = sub-circuit #1, dashed blue lines = first model by araujo de castro et al [10], continuous red lines = model by garcía-sánchez et al [48]). the outstanding difference between both equivalent circuit models is easily visualised by comparing the dashed blue line and the continuous red line curves presented in fig. 6, that correspond to i-v characteristics calculated with the model by araujo de castro et al [10] of fig.3, and calculated with the model by garcía-sánchez et al [48] of fig.5, respectively. as an example of a real exponential-like upward bend in the first quadrant of the i-v curve beyond the open circuit voltage (i>0; v>voc), data points corresponding to an experimental organic solar cell with s-shaped kink measured under arbitrary illumination and described in [48] are presented in fig. 7. 342 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. fig. 7 illuminated i-v characteristics of an experimental organic solar with s-shaped kink (dashed black straight line = series resistance i-v curve, dotted black line = subcircuit #1 i-v curve, continuous dashed blue lines = sub-circuit #2 i-v curve and total model playback of previous model, red lines = sub-circuit #2i i-v curve and total model playback of newer model, green circles = measured i-v data). also shown in fig. 7 is the playback calculated using the model by garcía-sánchez et al [48] with the parameter values indicated in the figure which had been previously extracted by curve fitting of the model’s equation to the originally measured data. notice that in this case the relation n3=2n2 was imposed as a fitting condition, so that the solution for v2 also turns out to be explicit [48], and the terminal voltage v calculated from (19) is also an explicit function of the terminal current. whenever the model’s equations can be solved explicitly, we can avoid numerical iteration and thus ease the necessary curve fitting to experimental data when extracting the cell’s model parameters. such explicit equations are desirable also because they may be analytically operated on, which facilitates derivation of other analytic expressions, such as the temperature dependence of the open-circuit voltage. for assessment purposes, fig. 7 includes three separate i-v curves: two correspond to the conventional solar cell equivalent circuit model (sub-circuit #1), one is the rs curve (black dash straight line), and the other (black dotted curve) corresponds to the parallel combination of the constant photo-current source, the first diode, and its companion shunt resistor rp1. the third curve (continuous red line) corresponds to the s-shape-generating sub-circuit 2i, which is made up of the parallel combination of the second and third diodes with opposite polarities. modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 343 a quick look at the shapes of the curves in fig. 7, in light of the terminal voltage equation (19) visually indicates how the s-shape kink is formed in the total model’s i-v curve (shown in fig. 7 on top of the green circles that represent the data points). in fact, the simple graphical addition of the three curves along the voltage axis, equivalent to adding the voltages across the three series-connected parts of the model (rs, sub-circuit 1 and subcircuit 2i), confirms that the result is indeed a sort of double s shape, by virtue of the upward turn at its highest voltage end. additionally, we may notice that the inflexion point of the shown total i-v curve is located at voc, as expected from the fact that the i-v characteristic of sub-circuit #2i, which is the anti-parallel combination of the two extra diodes, has its inflexion point at zero voltage. it is worth mentioning at this point that the reason for proposing that a conventional solar cell equivalent circuit model be connected in series to an additional circuit with a configuration such as that of sub-circuit #2i, is not the result of an arbitrary attempt to try to empirically reproduce the observed upturn beyond voc. rather, it is based on a certain understanding of how to best generalise the possible mechanisms that might be present in the different types of solar cells that exhibit this upturn beyond voc. therefore, a configuration such as that of sub-circuit#2i is most probably justifiable as a reasonable circuital representation of specific underlying physical phenomena taking place near the interfaces of solar cells that display the s-shaped kink. 4.5. model by l. zuo et al (2014) l. zuo et al [36] proposed in 2014, an improved equivalent circuit model for organic solar cells. they explain their proposal saying: “in view of the previous studies, an improved equivalent circuit is proposed to interpret the origin of s-shaped i–v curve and its effect on device performance.” their equivalent circuit model contains, as those proposed before, a sub-circuit with a rectifying junction connected in series with the conventional single-diode photovoltaic equivalent circuit, which is considered the essential reason for the s-shape curve. however, no mention is made in [36] of the previous models already proposed by araujo de castro [10] and garcía-sánchez et al [48] in 2010 and 2013, respectively. this sub-circuit is shown within the complete equivalent circuit model diagram presented in fig. 8. notice that there are two remarkable differences with respect to the original model by araujo de castro et al [10] (see fig. 1(b) of [36]).the first and foremost is that the second diode in sub-circuit #2 is connected with the same forward polarity as the diode in the photovoltaic sub-circuit #1, whereas in the model proposed by araujo de castro et al [10] the second diode in sub-circuit #2 was connected with reverse polarity, opposite to that of the diode in the photovoltaic sub-circuit #1 (see fig.3). in this case the second diode is supposed to be a schottky barrier junction introduced to represent the anode interface current caused by the rectifying properties induced by interfacial dipoles, unbalanced charge transport, etc. nonetheless, it is noted that this model is not limited to the use of schottky barriers, and thus any rectifying junction or non-ohmic contact would do. we must draw attention here to the fact that if an ideal diode with the same forward polarity as the photovoltaic diode were connected by itself (without rp2) in series with sub-circuit #1 of fig. 8, it would certainly modify the shape of the illuminated i-v curve 344 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. in the first quadrant, but at the same time it would suppress almost completely the current in the fourth quadrant. therefore, if a significant (reverse) current is to flow through subcircuit #2 under illumination, there must be substantial shunt current going around that second diode. fig. 8 organic solar cell dc lumped-parameter equivalent circuit model proposed by zuo et al [36] to describe the s-shaped kink. it includes the conventional single ideal diode with series and shunt resistances (sub-circuit #1), and series-connected sub-circuit #2 with a single schottky diode and a parallel resistor, and additional series resistor. that means that the value of the resistor rp2 that shunts the second forward diode in sub-circuit #2 (fig. 8) must be small. we would like to mention in passing that a series combination of ideal diodes with equal polarity was used in the past to model amorphous silicon junctions [9]. the second difference introduced in this model is a minor one. it refers to the fact that now there is a second series resistor rs2, in addition to rs1, the already present series resistor of the model proposed by araujo de castro et al [10] (compare figs.3 and 8). although this second series resistor rs2 seems redundant, because from a circuits point of view it can be absorbed by rs1, according to the explanation given in [36], this resistor “rs2 stands for the series resistance of each layer and interface resistance.” 4.6. second model by f. araujo de castro et al (2016) seeking further generalisation, araujo de castro et al published in 2016 [41] a modification of the previous model by garcía-sánchez et al [48]. in fact, what they proposed is a generalised 3-diode model (shown in fig. 9) aimed to, in these authors’ own words, “gain insight into the modelling and parametrisation of organic solar cell current voltage curves” [41]. the modification introduced by araujo de castro et al consists of two specific changes that are made to the previous model. modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 345 fig. 9 second solar cell dc lumped-parameter equivalent circuit model, proposed as an improvement by araujo de castro et al [41]. it is said to improve on the previous equivalent circuit model by garcía-sánchez et al [48]. the previously present series resistor has been eliminated. the previously eliminated shunt resistor rp2 has been added again in parallel, but now with the two diodes in the seriesconnected sub-circuit #2 the first change made is the restoration of the shunt resistor rp2, originally connected in parallel with the single diode of sub-circuit #2 in the first model by araujo de castro et al [10] shown in fig. 3, which was later eliminated by garcía-sánchez et al [48] to be replaced by a third forward polarity diode in anti-parallel connection with the second diode. that shunt resistor rp2 was restored araujo de castro et al [10], but it is now connected in parallel with the two diodes of sub-circuit 2i in the model by garcía-sánchez et al [48] shown in fig. 5. the second change made was to eliminate the series resistor rs, which had been present in earlier equivalent circuit models. the change in [41], that is, the restoration of the shunt resistor rp2, seems to be a perfectly reasonable and necessary decision from a phenomenological point of view. the presence of that resistor rp2, that was present in the first model by araujo de castro et al [10], and was then eliminated and replaced by a diode in the model by garcía-sánchez et al [48], seems to be crucial for properly modelling bulk transport within the body of the solar cell. from a graphical point of view, resistor rp2 controls the i-v curve’s slope of subcircuit #2i around the origin. at the same time, the presence within sub-circuit 2i of the third diode in anti-parallel connexion with diode 2 introduced by garcía-sánchez et al [48] also seems to be necessary, in order to be able to produce the upward bend observed in the i-v curve beyond voc. therefore, the decision adopted in [41] of keeping both elements, the original shunt resistor rp2 and the third diode introduced in [gar1348], seems to be the best way to address two physical phenomenon-related circuital issues that are not likely to be mutually 346 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. excluding, since one seem to come mainly from the bulk while the other probably of interfacial origin. on the other hand, the second change made in [41] regarding the elimination of the series resistor rs, which had been present in all earlier solar cell lumped-parameter equivalent circuit models, does not seem to be a convenient decision. in fact, from a methodological point of view, that series resistor rs should not be even considered as part of the s-shape-generating sub-circuit #2, but as part of the conventional solar cell circuit model. therefore, there does not seem to be a good reason why rs should be substantially altered when adding an s-shape-generating sub-circuit to the total model. to write the solution for this equivalent circuit’s terminal voltage v as a function of the terminal current i only voltages v1 and v2 across the terminals of each of its two subcircuits need be added, since rs has been eliminated. therefore, (19) becomes simply: 1 2v v v  . (20) however, now v2 must be obtained by solving: 2 2 2 02 03 2 3 2 exp 1 exp 1 th th p v v v i i i n v n v r                              . (21) the solution of (21) is not explicit in general and would have to be solved numerically or approximately for the terminal voltage v2. 4.7. model by p. j. roland et al (2016) regardless of the model development methodology used, the fact is that rs represents an indispensable lumped element of any solar cell equivalent circuit model to be able to describe the presence of omnipresent parasitic resistance at the contacts and other collecting electrode resistance. therefore, it is important keeping this series resistor rs in place, in any solar cell dc lumped parameter equivalent circuit model. the improved solar cell dc lumped-parameter equivalent circuit model, shown in fig. 10 as suggested by p. j. roland et al [50], is another step forward in the sequence of models previously proposed in [10, 41, 48]. the series resistor has been restored as an indispensable lumped element needed to describe the ubiquitous parasitic series resistances present in all solar cells. as before, we would write the solution for this improved equivalent circuit’s voltage v as a function of i by adding the voltage drop irs across the now restored series resistor rs and the voltages v1 and v2 across the terminals of each of its two sub-circuits. that means using (15) instead of (16), and obtaining v2 by solving (7) through numerical or approximate means. sub-circuit #2 contains the parallel combination of shunt resistor rp2 and the antiparallel pair of diodes 2 and 3. p. j. roland et al [50] used spice simulations of this equivalent circuit model to reproduce i-v plots with s-shaped deformation for studying the influence of changing the values of the circuit element’s parameters on the shape of the resulting i-v curve. modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 347 fig. 10 an improved solar cell dc lumped-parameter equivalent circuit model, proposed by p. j. roland et al [50] as a further improvement to the models proposed by araujo de castro et al [41] and by garcía-sánchez et al [48]. the series resistor has been restored as a necessary element to describe the parasitic series resistance. a comparison between experimentally measured data of cds/cdte/fes2 nc/au photovoltaic devices at 200k, which exhibit s-shape kinks in the measured i-v characteristics and their corresponding simulated s-shaped curve was also carried out, trying to correlate the model’s parameters with the physical features that determine current flow through the device. 5. conclusion we have presented a brief chronological review and appraisal of dc lumped-parameter equivalent circuits that have been proposed to date for modelling the effect of the s-shaped “kink” which shows up in the fourth quadrant, and eventually in the first, of the i-v characteristics measured under illumination of certain types of organic solar cells, as well as of some other types of photovoltaic devices. in doing so, we have analysed the defining mathematical equations of the available equivalent circuits, and we have provided and discussed their possible solutions. critical analysis have been included and some recommendations were offered when relevant. we hope that the unifying approach and generic nature of this succinct review can provide extra insight and be of practical help to photovoltaic engineers and solar cell scientists that must deal with the important issue of the s-shape i-v curve deformation and its modelling through lumped-parameter equivalent circuits. acknowledgement: parts of his work were financially sponsored by the madrid autonomous community and urjc, under projects nos. s2009/esp-1781 and urjc-cm-2010-cet-5173, respectively. partial financial assistance was also received through an institutional grant from usb’s decanato de investigación y desarrollo. 348 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. references [1] a. ortiz-conde, f. j. garcía-sánchez, j. muci, a. sucre-gonzález, “a review of diode and solar cell equivalent circuit model lumped parameter extraction,” facta universitatis, series: electronics and energetics, vol. 27, no 1, pp. 57-102, march 2014. [2] r. v. k. chavali, j. v. li, c. battaglia, s. de wolf, j. l. gray, m. a. alam, “a generalized theory explains the anomalous suns–voc response of si heterojunction solar cells,” ieee journal of photovoltaics, vol. 7, no. 1, pp. 169 176, jan. 2017. [3] p. g. kale, c. s. solanki, "silicon quantum dot solar cell using top-down approach." international nano letters, vol. 5, no. 2, pp. 61-65, jun 2015. [4] s. van reenen, m. kemerink, h. j. snaith, “modeling anomalous hysteresis in perovskite solar cells,” j. of phys. chem. letters, vol. 6, pp. 3808−3814, 2015. [5] f. xu, j. zhu, r. cao, s. ge, w. wang, h. xu, r. xu, y. wu, m. gao, z. ma, f. hong, z. jiang, “elucidating the evolution of the current-voltage characteristics of planar organometal halide perovskite solar cells to an s-shape at low temperature,” solar energy materials & solar cells, vol. 157, pp. 981– 988, december 2016. [6] j. liu, g. wang, k. luo, x. he, q. ye, c. liao, j. mei. “understanding the role of electron transport layer in highly efficient planar perovskite solar cells.” chemphyschem. in press, jan 2017. [7] a. wagenpfahl, d. rauh, m. binder, c. deibel, v. dyakonov, “s-shaped current-voltage characteristics of organic solar devices,” physical review b, vol. 82, no. 115306, september 2010. [8] a. opitz, r. banerjee, s. grob, m. gruber, a. hinderhofer, u. hörmann, j. kraus, t. linderl, c. lorch, a. steindamm, a. k topczak, “charge separation at nanostructured molecular donor–acceptor interfaces,” chapter of elementary processes in organic photovoltaics , volume 272 of the series advances in polymer science, pp. 77-108. springer international pub., 2017. [9] v. h. tran, r. b. ambade, s. b. ambade, s. h. lee, i. h. lee. “low-temperature solution-processed sno2 nanoparticles as cathode buffer layer for inverted organic solar cells.” acs applied materials & interfaces, accepted paper in press, jan 2017. [10] f. araujo de castro, j. heier, f. nüesch, r. hany, “origin of the kink in current-density versus voltage curves and efficiency enhancement of polymer-c60 heterojunction solar cells,” ieee journal of selected topics in quantum electronics, vol. 16, no. 6, pp. 1690 – 1699, nov/dec 2010. [11] b. qi, j. wang, “fill factor in organic solar cells,” phys.chem. chem. phys., vol.15, pp. 8972-8982, 2013. [12] w. shockley, the theory of p-n junctions in semiconductors and p-n junction transistors, bell system technical journal, vol. 28, no. 3, pp. 435−489, july 1949. [13] r. m. corless, g. h. gonnet , d.e.g. hare, d. j. jeffrey, d. e. knuth, “on the lambert w function.” adv. comput. math., vol. 5, no. 1, pp. 329–359, 1996. [14] lambert w-function (4.13), nist digital library of mathematical functions. http://dlmf.nist.gov/4.13 [15] s. r. valluri, r. m. corless and d. j. jeffrey. “some applications of the lambert w function to physics,” canadian j. of physics, vol. 78, no. 9, pp. 823-831, 2000. [16] d. veberič, “lambert w function for applications in physics,” computer physics communications, vol. 183, pp. 2622–2628, 2012. [17] t. banwell, a. jayakumar, “exact analytical solution for current flow through diode with series resistance.” electronics letters, vol. 36, no. 4, pp. 291–292, 17 feb. 2000. [18] a. ortiz-conde, f. j. garcía-sánchez, j. muci, “exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances,” solid-state electronics, vol. 44, no. 10, pp. 1861–1864, october 2000. [19] a. jain, a. kapoor, “exact analytical solutions of the parameters of real solar cells using lambert wfunction,” solar energy materials & solar cells, vol. 81, no. 2, pp. 269-277, february 2004. [20] a. jain, a. kapoor, “a new approach to study organic solar cell using lambert w-function,” solar energy materials & solar cells, vol. 86, pp. 197–205, 2005. [21] d. c. lugo-muñoz, m. de souza, m. a. pavanello, d. flandre, j. muci, a. ortiz-conde, f. j. garcíasánchez, “parameter extraction in quadratic exponential junction model with series resistance using global lateral fitting,” ecs transactions, vol. 31, no. 1, pp. 369-376, 2010. [22] a. ortiz-conde, d. lugo-muñoz and f. j. garcía sánchez, “an explicit multi-exponential model as an alternative to traditional solar cell models with series and shunt resistances,” ieee journal of photovoltaics, vol. 2, no. 3, pp. 261-268, july 2012. http://dlmf.nist.gov/4.13 modelling solar cell s-shaped i-v characteristics with dc lumped-parameter equivalent circuits – a review 349 [23] t. ma, h. yang, l. lu, “solar photovoltaic system modeling and performance prediction,” renewable and sustainable energy reviews, vol. 36, pp. 304-315, 2014. [24] v. j. chin, z. salam, k. ishaque, “cell modelling and model parameters estimation techniques for photovoltaic simulator application: a review,” applied energy, 154, pp. 500–519, 2015. [25] a. m. humada, m. hojabri, s. mekhilef, h. m. hamada, “solar cell parameters extraction based on single and double-diode models: a review,” renewable and sustainable energy reviews, vol. 56, pp. 494–509, 2016. [26] a. r. jordehi, parameter estimation of solar photovoltaic (pv) cells: a review,” renewable and sustainable energy reviews, vol. 61, pp. 354–371, 2016. [27] j. w. jin, s. jung, y. bonnassieux, g. horowitz, a. stamateri, c. kapnopoulos, a. laskarakis, s. logothetidis, “universal compact model for organic solar cell,” ieee transactions on electron devices, vol. 63, no. 10, pp. 4053-4059, october 2016. [28] p. kumar, a. gaur, “model for the j-v characteristics of degraded polymer solar cells,” journal of applied physics, vol. 113, no. 094505, 2013. [29] a. gaur, p. kumar, “an improved circuit model for polymer solar cells,” prog. photovolt: res. appl., 2013. [30] a. kumar, s. sista, y. yang, “dipole induced anomalous s-shape i-v curves in polymer solar cells,” journal of applied physics, vol. 105, no. 094512, 2009. [31] j. wagner, m. gruber, a. wilke, y. tanaka, k. topczak, et al, “identification of different origins for sshaped current voltage characteristics in planar heterojunction organic solar cells,” journal of applied physics, vol. 111, no. 054509, march 2012. [32] r. saive, c. mueller, j. schinke, r. lovrincic, w. kowalsky, “understanding s-shaped current-voltage characteristics of organic solar cells: direct measurement of potential distributions by scanning kelvin probe,” applied physics letters, vol. 103, no. 243303, 2013. [33] o. j. sandberg, m. nyman, r. österback, “effect of contacts in organic bulk heterojunction solar cells,” phys. rev. applied, vol. 1, 024003, 27 march 2014. [34] w. tress, o. inganäs, “simple experimental test to distinguish extraction and injection barriers at the electrodes of (organic) solar cells with s-shaped current–voltage characteristics,” solar energy materials & solar cells, vol. 117, pp. 599–603, 2013. [35] m. m. furchi, a. a. zechmeister, f. hoeller, s. wachter, a. pospischil, t. mueller, “photovoltaics in van der waals heterostructures,” ieee journal of selected topics in quantum electronics, vol. 23, no. 1, pp. 4100111, jan/feb 2017. [36] l. zuo, j. yao, h. li, h. chen, “assessing the origin of the s-shaped i–v curve in organic solar cells: an improved equivalent circuit model,” solar energy materials & solar cells, vol. 122, pp. 88–93, 2014. [37] a. cheknane, h. s. hilal, f. djeffal, b. benyoucef, j.-p. charles, “an equivalent circuit approach to organic solar cell modeling,” microelectronics journal, vol. 39, pp. 1173–1180, 2008. [38] b. mazhari, “an improved solar cell circuit model for organic solar cells,” solar energy materials & solar cells, vol. 90, no. 7, pp. 1021-1033, may 2006. [39] b. romero, g. del pozo, b. arredondo, “exact analytical solution of a two diode circuit model for organic solar cells showing s-shape using lambert w-functions,” solar energy, vol. 86, pp. 3026–3029, 2012. [40] k, roberts, s. r. valluri. "on calculating the current-voltage characteristic of multi-diode models for organic solar cells." arxiv preprint arxiv:1601.02679 , 2015. [41] f. a. de castro, a. laudani, f. riganti fulginei, a. salvini, “an in-depth analysis of the modelling of organic solar cells using multiple-diode circuits,” solar energy, vol. 135, pp. 590–597, 2016. [42] a. ortiz-conde, y. ma, j. thomson, e. santos, j. j. liou, f. j. garcía-sánchez, m. lei, j. finol, p. layman, “direct extraction of semiconductor diode parameters using lateral optimization method,” solid-state electronics, vol. 43, no. 4, pp. 845–848, 1999. [43] g. del pozo, b. romero, b. arredondo, “evolution with annealing of solar cell parameters modeling the s-shape of the current–voltage characteristic,” solar energy materials & solar cells, vol. 104, pp. 81– 86, 2012. [44] g. del pozo, b. romero, b. arredondo, “extraction of circuital parameters of organic solar cells using the exact solution based on lambert w-function,” proceedings of the int. society for optical engineering (spie), brussels, belgium, vol. 8435, organic photonics v, 84351z, june 2012. [45] k. tada, “validation of opposed two-diode equivalent-circuit model for s shaped characteristic in polymer photocell by low-light characterization,” organic electronics, vol. 40, pp. 8-12, 2017. [46] b. romero, g. del pozo, e. destouesse, s. chambon, b. arredondo, “circuital modelling of s-shape removal in the current–voltage characteristic of tiox inverted organic solar cells through white-light soaking,” organic electronics, vol. 15, pp. 3546–3551, 2014. 350 f. j. garcía-sánchez, b. romero, d. c. lugo-muñoz, et al. [47] b. romero, g. del pozo, b. arredondo, j. p. reinhardt, m. sessler, and u. würfel, “circuital model validation for s-shaped organic solar cells by means of impedance spectroscopy,” ieee journal of photovoltaics, vol. 5, no. 1, pp. 234-237, january 2015. [48] f. j. garcía-sánchez, d. lugo-muñoz, j. muci, a. ortiz-conde, “lumped parameter modeling of organic solar cells’ s-shaped i-v characteristics,” ieee journal of photovoltaics, vol. 3, no. 1, pp. 330-335, january 2013. [49] ortiz-conde, a., estrada, m., cerdeira, a., garcía sánchez, f.j., de mercato, g. , “modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction,” solid-state electronics, vol. 45, no. 2, pp. 223-228, 2001. [50] p. j. roland, k. p. bhandari, r. j. ellingson, “electronic circuit model for evaluating s-kink distorted current-voltage curves,” proc. ieee 43rd photovoltaic specialists conf. (pvsc), 2016. 13154 facta universitatis series: electronics and energetics vol. 38, no 2, june 2025, pp. 337 353 https://doi.org/10.2298/fuee2502337k © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper optimal placement of bypass diodes in pv modules for energy production improvement under partial shading conditions nikola krstić1, dragan tasić1, dardan klimenta2 1university of niš, faculty of electronic engineering, niš, serbia 2university of priština in kosovska mitrovica, faculty of technical sciences, kosovska mitrovica, serbia orcid ids: nikola krstić https://orcid.org/0000-0003-2872-3190 dragan tasić https://orcid.org/0000-0001-5957-9617 dardan klimenta https://orcid.org/0000-0003-0019-8371 abstract. this paper determines the optimal placement of bypass diodes in photovoltaic (pv) modules to increase their energy production in the case of partial shading while protecting each pv cell from overheating. within the optimal placement, the optimal number and the optimal locations of bypass diodes are obtained using the metaheuristic optimization method of genetic algorithm (ga). the optimization method finds the optimal solution by maximizing the power of the maximum power point (mpp) on the power-voltage (p-v) characteristics generated from the created model of the pv module under partial shading. this model is created using the five-parameter single-diode pv cell model and allows the implementation of different shading patterns and different locations of bypass diodes in the pv modules. to simulate the effects of static and dynamic shading of the pv module surface, horizontal, vertical, diagonal, and random shading patterns are used. the obtained results show that the optimal placement of bypass diodes in pv modules can significantly increase their energy production, especially for the cases with low solar irradiance of the shaded pv cells. this energy increment is between 30% and 80 % depending on the shading pattern, when the solar irradiance of the shaded pv cells is 70 % reduced compared to the unshaded cells. key words: bypass diode, partial shading, pv module, genetic algorithm (ga), shading pattern 1. introduction solar energy is one of the most important renewables, and certainly a necessary part in energy transition to green technologies. this is primarily due to the great energy potential of solar irradiance which can be directly converted into electricity using pv modules [1]. during received october 28, 2024; revised december 16, 2024; accepted december 22, 2024 corresponding author: nikola krstić university of niš, faculty of electronic engineering, niš, serbia e-mail: nikola.krstic@elfak.ni.ac.rs https://orcid.org/0000-0003-2872-3190 https://orcid.org/0000-0001-5957-9617 https://orcid.org/0000-0003-0019-8371 338 n. krstić, d. tasić, d. klimenta their operation, the pv module surface can be partially shaded by nearby objects (static shading) or by clouds (dynamic shading), decreasing the solar irradiance on it [2]. the amount of electric power generated by the pv modules is proportional to the intensity of solar irradiance, which is the main reason why partial shading harms the pv module energy production [3]. partial shading not only decreases the intensity of solar irradiance on the pv module surface but also makes it unevenly distributed which decreases the operating performances and generated power of the pv modules [4]. the main reason for this degradation of performances is that pv cells in pv modules are connected in series to achieve the required output voltage, so the shaded pv cells with lower photocurrent are limiting the current flowing through the unshaded cells [5]. to overcome this problem diodes are connected in parallel with pv cells offering the path for current that is flowing from the unshaded to the shaded pv cell [6]. taking into account their function of bypassing the shaded pv cells these diodes are called bypass diodes. in addition to the increase of power generation of the pv module [7], bypass diodes protect the shaded pv cells from overheating by not allowing them to enter in reverse bias. in the literature, there are a lot of papers covering the improvement of the pv module operation in the case of partial shading [8] by finding the optimal position (determining the optimal tilt and azimuth angle), developing new enhanced mpp tracking algorithms [9-11], or in recent years by proposing new more efficient layouts and topologies for pv modules [12]. however, there are very few papers that consider the impact of bypass diodes on the operation of the pv modules [13-14], and practically none deal with their optimal placement in the pv module under partial shading [15]. in other words, previous research has been more focused on the general benefits and contributions of bypass diodes on the operation of the pv modules in partial shading conditions, and less on their optimal placement in the module, neglecting the energy generation improvement that can be achieved in this way. also, the papers that optimize the configuration of the bypass diodes in the pv modules use different approaches which usually are not based on metaheuristics [16-17]. having that in mind this paper considers the improvement of the pv module energy production under partial shading using the optimal placement of bypass diodes [15]. the basic idea behind the proposed optimization is that different shading patterns require different paths for current in the pv module, so different locations of bypass diodes are needed. considering that bypass diodes can be connected to one or a group of pv cells room for optimization appears, especially when different shading patterns take place [6]. to determine the optimal placement (number and locations) of the bypass diodes metaheuristic optimization method of ga is used [8]. the main goal of the optimization method is to maximize the energy production output of the pv array, while simultaneously protecting each pv cell from overheating. to determine the quality of the proposed solution ga maximizes the energy output of the pv module using the power of the mpp (it is assumed that the pv module operates in the mpp at all times). this mpp is derived from the p-v characteristic of the created model of the pv module under partial shading for different shading patterns [18]. the model of the pv module is flexible and allows the placement of bypass diodes in different locations [19]. it is created based on the five-parameter single-diode pv cell model [18], in which a partial shading effect is included by reducing the photocurrent of the shaded cell. although the uneven distribution of solar irradiation on the surface of the pv modules is considered in this paper the temperature of each pv cell in the module is assumed to be the same. during the optimal placement of bypass diodes in pv modules for energy production improvement under... 339 exploitation, pv modules are often exposed to combined effects of static and dynamic shading of their surfaces, for this reason, horizontal, vertical, diagonal, and random shading patterns [5] are used when generating results. to see the energy production improvement obtained results are compared with those generated for the standard pv module configuration with 3 bypass diodes. 2. model of the pv module under partial shading the first step in creating the model of the pv module under partial shading is to model the pv cell as the basic building unit from which the pv module is composed. for this purpose, the five-parameter single-diode model of the pv cell, shown in fig. 1, is used. fig. 1 electric circuit of the five-parameter single-diode model of the pv cell considering the i-v characteristic of the diode and the topology of the electric circuit in fig. 1, the i-v characteristic of the pv cell is: 0 exp 1c c s c c s c ph t sh v i r v i r i i i av r   + + = − − −       (1) from (1) it can be seen that the dependency between pv cell current (ic) and the pv cell voltage (vc) is a function of five parameters, from which the model got its name, and that are: photocurrent of the pv cell (iph), diode inverse saturation current (i0), diode ideality constant (a), internal series resistance (rs), and internal shunt resistance (rsh) of the pv cell. also, in (1) vt is the thermal voltage through which the impact of temperature on the i-v characteristic of the pv cell is achieved and that is calculated using (2): /tv kt q= (2) in (2) t is the temperature, k is the boltzmann constant and q is the absolute elementary charge. taking into account that shading reduces the solar irradiance on the surface of the pv cell, the impact of the shading effect on the i-v characteristic of the shaded pv cell is included by reducing the value of the photocurrent: 0 0 ph ph g i i g = (3) where g is the solar irradiance of the shaded pv cell, while g0 and iph0 are the solar irradiance and photocurrent of the unshaded pv cell. 340 n. krstić, d. tasić, d. klimenta the second step in modeling the pv module under partial shading is to model the bypass diodes. in this paper, the pv module is composed of pv cells connected in series. to reduce the negative effects of partial shading a pv cell or a group of pv cells in the module have a bypass diode connected in parallel and oriented in the opposite direction to the pv cell diode. the i-v characteristic of the bypass diode is given by the expression: 0 exp 1bd bd bd bd t v i i a v    = −       (4) as can be seen from (4), the dependency between the current (ibd) and voltage (vbd) of the bypass diode is the same as in regular diodes, where i0bd is the inverse saturation current, and abd is the ideality constant of the bypass diode. taking into account the topology of the pv module and the existence of the bypass diodes, the current of the module (im) is equal to the sum of the pv cell current and the current of the bypass diode connected to that pv cell (4). the voltage of the pv module is the sum of the pv cell voltages or the sum of the voltages on the bypass diodes (6) because every pv cell in the module must be protected individually or as a part of a group by a bypass diode. m c bdi i i= + (5) 1 1 c bdn n m ci bdji j v v v = = = =  (6) in (6) nc is the number of pv cells and nbd is the number of bypass diodes in the pv module. the bypass diode starts to conduct when the current of the pv module is greater than the photocurrent of the pv cell protected by that bypass diode. when turned on, the current of the bypass diode is equal to the difference between the current of the module and the photocurrent of the pv cell with minimal solar irradiance within the group of pv cells protected by that bypass diode. bd m phmini i i= − (7) using the current of the bypass diode from (7), the voltage of the bypass diode can be found considering the i-v characteristic given in (4). 3. defining the optimization problem finding the optimal locations of bypass diodes in pv modules, for energy production improvement under partial shading, is a nonlinear optimization problem with constraints. the main constraint that exists is that the placement of bypass diodes must protect each pv cell from overheating. this constraint includes two limitations: 1. each pv cell, individually or as a part of a group, must have a bypass diode connected in parallel for protection. 2. the number of pv cells protected by one bypass diode (the number of pv cells in a group) must be limited to achieve safe operation of the shaded cells, for every case of partial shading. the limitation in the number of pv cells protected by one bypass diode exists to limit the reverse voltage that appears on the shaded cells, not allowing it to reach the reverse optimal placement of bypass diodes in pv modules for energy production improvement under... 341 breakdown voltage of the pv cell. in other words, if the number of pv cells protected by one bypass diode is too large, the most shaded pv cell will reach the reverse breakdown voltage and overheat before the bypass diode starts to conduct (as there is no protection from the bypass diode). taking into account that a group of pv cells has the same voltage as the bypass diode and that only the most shaded pv cell has the voltage in the opposite direction compared to other pv cells in a group, the value of reverse voltage (vr) that appears on the most shaded pv cell can be calculated as: ( 1)r bdon cg ocv v c n v= +  −  (8) where, vbdon is the voltage of the bypass diode when it starts to conduct (triggering voltage placed in the knee of the i-v characteristic), voc is the open circuit voltage of the pv cell, c is the correction factor that respects the difference between operating and open circuit voltage (has a value between 0.85 and 1) and ncg is the number of pv cells in a group. considering (8), the maximum number of pv cells in a group (nmax) can be determined as: 1rbd bdon cgmax oc v v n c v − = +  (9) in (9) vrbd is the reverse breakdown voltage of the pv cell. considering the given constraint by which the pv cells are protected from overheating the placement of bypass diodes must be organized in the following manner: the second connection point of the previous bypass diode is the first connection point of the next bypass diode, covering every pv cell in the pv module. control variables in this optimization problem are the number of bypass diodes and the location of their connection points in the pv module. the constraint of the number of bypass diodes in the pv module is given in (10), while the constraints of the locations of the first (i) and second (j) connection points of bypass diodes are defined in (11) and (12): c c bd cgmax n n n n   (10) 1 11, 1, , 2,3... bdn c k k bdi j n i j k n−= = + = = (11) , 1,2,3...k k cgmax bdj i n k n−  = (12) in this way, the first coordinate in the vector of control variables is the number of bypass diodes and the other coordinates are the locations (indexes of pv cells in the pv module in front of which the bypass diodes are connected) of the second connection points of each bypass diode except the last one, which is always located at the end of the module. in this way, the total number of coordinates in the vector of control variables is equal to the number of bypass diodes. the main goal of the optimization process is to maximize the energy production of the pv module under partial shading. taking into account that different shading patterns may occur on the surface of the pv module, the criterion function (c) must be defined using the energy produced by the pv module (wm) in the considered period: mc w= − (13) the minus sign appears in (13) so that minimization of the criterion function would lead to the optimal solution (solution in which the pv module produces the highest amount of energy). 342 n. krstić, d. tasić, d. klimenta although the partial shading changes the shape of the p-v characteristic of the pv module, it is assumed that it operates in the mpp at any given moment. the assumption of pv module operating in the mpp all the time is made to quantify the energy benefits that could be created by the optimal placement of bypass diodes in pv modules in partial shading conditions, which otherwise would depend on the efficiency of the used mpp tracking algorithm. this means that produced energy from (13) can be calculated using the power of the mpp on the p-v characteristic of each part of the considered period as: 1 n m mmppi ii w p t = =  (14) where pmmppi is the power of the mpp of the pv module and δti is the time interval of the i-th period, while n is the number of different shading patterns that appear in the considered period. the implementation of the optimization method is such that it prioritizes the solution with a lower number of bypass diodes if there are more solutions with the same value of the criterion function. 4. solving the optimization problem the metaheuristic optimization method of ga is used to solve the optimization problem and find the optimal placement of bypass diodes in the pv modules to increase their energy production under partial shading. the flowchart of the proposed approach is shown in fig. 2. fig. 2 flowchart of the proposed approach for finding the optimal placement of bypass diodes in the pv module optimal placement of bypass diodes in pv modules for energy production improvement under... 343 4.1. genetic algorithm ga is a population-based optimization method, inspired by the process of evolution in nature, in which more capable and adaptable individuals have a greater chance to pass on their genetic material. each individual is described with the vector of control variables and the value of the criterion function, first representing the genetic material and the second its quality. the first step in this optimization method is the selection of pairs for mating, where individuals with lower values of criterion function have a greater chance to be selected. this is done by randomly choosing the individuals from the genetic pool in which more suitable individuals have a greater presence. after choosing pairs for mating the second step of the ga takes place in which the crossing of genes is performed. in this step, the next generation of individuals is created which most likely has better genetic material and thus is closer to the optimal solution. the third and final step of ga mimics the process of mutation in which with a certain probability the genetic material of individuals in a population is randomly changed. the main function of the mutation process is to create genetic diversity in a population, representing a mechanism in the optimization method for escaping the local optimum. during these steps the quality of genetic material of each next generation is increasing, while the value of the criterion function of individuals is decreasing. these three steps are repeated the required number of times until the change in the value of the criterion function of the best individual is negligible. 4.2. implementation of ga in the optimization problem ga is a very flexible metaheuristic optimization method, easy to implement on various optimization problems. in this paper, the first step of the ga is implemented so the probability (pi) that marks the presence of the individual in the genetic pool based on their criterion function (ci) is determined as: 1 (%) 100% i i i n jj c p c = =   (15) where ni is the number of the fittest individuals in the generation that are going into the genetic pool and thus can be chosen for mating. in the second step, the crossing is achieved so that the even coordinates in the vector of control variables are inherited from one and the odd coordinates from the other parent. 1( ) ( ), 1,3,..., 1k k p i cox t x t t n+ = = − (16) 1( ) ( ), 2,4,...,k k p i cox t x t t n+ = = (17) in (16) and (17) 1k px + is the vector of control variables of pth individual (offspring) from the k + 1-th generation (iteration), while the k ix and k jx are the vectors of control variables of its parents (individuals from k-th generation), and nco is the number of coordinates of the vector of control variables of the individual from the next generation (offspring). also, in (16) and (17) the first coordinate represents the number of bypass diodes, while the other coordinates are their locations, one for each bypass diode, except the last one, whose second connection point is located at the end of the pv module. it is important to note that in the case where the 344 n. krstić, d. tasić, d. klimenta offspring inherits the number of the bypass diodes from the parent that has a greater number of coordinates, the content on those additional coordinates is directly inherited by the offspring. the process of mutation is implemented to change (increase or decrease) the genetic material of the individuals (number and locations of bypass diodes) by one. the probability of mutation to happen is determined by the mutation rate (p), which in this paper is linearly increasing by the iterations (k) from the minimum to the maximum value: ( ) ( 1) 1 max min min k p p p k p k n − = +  − − (18) where nk is the total number of iterations. 5. determining the values of the parameters used in the simulations the parameters needed for running the simulations and generating results consist of the parameters in the model of the pv module under partial shading, parameters of the optimization method, and the parameters for the shading patterns. the parameters used in the model of the pv module, are the parameters of the pv cell model whose values need to be determined. these five unknown parameters in the pv cell model are obtained considering the characteristic operation modes of the pv cell (open circuit, short circuit, and operation in the mpp), using the i-v characteristic from (1). also, it is assumed that the losses in the pv cell in the short circuit are three times greater than the losses in the open circuit operation mode. the value used for this ratio is determined based on the values of the single-diode model parameters used in [20]. the ideality constant of the pv cell has a value of 1.3, which is a value from a common range for this parameter that is between 1 and 2. taking this into account, the four nonlinear equations can be formed: ( ,0) 0c oci v = (19) (0, ) 1c sci i = (20) , oc sc c c c mpp mpp mpp v i ff ff i v v v    =    (21) 2 2 3 oc sc s sh v i r r  =  (22) the parameters in the pv cell model are expressed in relative units, where the open circuit voltage (voc) and short circuit current (isc) are the base units equal to 1 p.u, while the values of the voltage of the mpp and the fill factor are vmpp = 0.815 and ffc = 0.76. the non-linear system of equations (19)-(22) is solved using the newton-raphson iterative method, and the values of pv cell parameters are found: iph = 1, i0 = 4.914 · 10-10, rs = 0.0596, and rsh = 50.289 p.u. the configuration of the pv module considered in this paper is such that it is composed of 36 pv cells connected in series, located in six rows and six columns. it is important to note that pv cells in the pv module are connected vertically (figures 3, 4, and 5). the number and the locations of bypass diodes in the pv modules are determined using the optimization method of ga. optimal placement of bypass diodes in pv modules for energy production improvement under... 345 the optimization method is applied to a population of 100 individuals and the solution to the optimization problem is obtained after 50 iterations. values of the parameters required for the implementation of ga are: the number of individuals who are allowed to go into the genetic pool is 15% of all individuals in the population (ni = 15), minimum and maximum values of the mutation rate are pmin = 15 % and pmax = 35 %. the partial shading of the pv module is included using four different shading patterns: horizontal, vertical, diagonal, and random shading pattern. the first three shading patterns (horizontal, vertical, and diagonal) are modeled to create two different shades on the surface of the pv module during their existence. in the case of the horizontal shading pattern, the first shade covers one row of the pv cells in the pv module and the second shade covers two, as shown in figure 3. fig. 3 the surface of the pv module with a horizontal shading pattern the same analogy is used for the vertical shading pattern, where columns of pv cells are shaded, instead of rows, figure 4. the shading surface of the diagonal shading pattern has fig. 4 the surface of the pv module with a vertical shading pattern 346 n. krstić, d. tasić, d. klimenta a triangular shape and covers pv cells located in the corner of the pv module. in this case, the first shade covers three and the second shade covers ten pv cells, as can be seen in figure 5. because of the huge variety of possibilities in the case of the random shading pattern, three different cases are considered. in the first case, the shade on the surface of the pv module changes 2 times in the observation period, in the second case 10 times, and 50 times in the third case, where each shade lasts the same time. fig. 5 the surface of the pv module with a diagonal shading pattern two different levels of shade are considered for the horizontal, vertical, and diagonal shading patterns. in the first case, the shaded pv cells have 40 %, and in the second 70 % of the solar irradiance of the unshaded pv cells. for the random shading pattern solar irradiance of each pv cell has a random value between 20 and 80 %. in all considered cases of partial shading, the maximum number of pv cells that one bypass diode can protect is 12 and the solar irradiance of the unshaded pv cells has the same value during the entire observation period. also, it is important to note that the i-v characteristic of the bypass diode has the same parameter values as the i-v characteristic of the diode in the pv cell model. 6. results and discussion the results shown in tables 1, 2, and 3 are the results obtained for the horizontal, vertical, and diagonal shading patterns, respectively. these tables contain the number and locations of the bypass diodes, as well as the average powers generated by the pv module. to compare and evaluate the improvement of the average power obtained in the case of the optimal placement of the bypass diodes (pavr) in the pv module, the average power of the pv module with 3 bypass diodes (pavr_3), generated in the same conditions, is also shown in tables 1, 2, and 3. the power generated by the pv module with 3 bypass diodes (each protecting 12 pv cells) is used as a reference for comparison because this configuration of the pv module is the standard one. optimal placement of bypass diodes in pv modules for energy production improvement under... 347 table 1 the optimal number and location of bypass diodes and the generated average powers of the pv module with and without optimal placement in the case of a horizontal shading pattern sp h1 h2 h1+2 pavr_3 0.259462 (0.591937) 0.247915 (0.573705) 0.253688 (0.582821) pavr 0.476175 (0.591937) 0.351390 (0.573705) 0.362045 (0.582821) nbd 18 (3) 12 (3) 18 (3) loc. 1 2 (13) 3 (13) 2 (13) loc. 2 3 (25) 7 (25) 3 (25) loc. 3 7 (-) 9 (-) 7 (-) loc. 4 8 (-) 13 (-) 8 (-) loc. 5 9 (-) 15 (-) 9 (-) loc. 6 13 (-) 19 (-) 13 (-) loc. 7 14 (-) 21 (-) 14 (-) loc. 8 15 (-) 25 (-) 15 (-) loc. 9 19 (-) 27 (-) 19 (-) loc. 10 20 (-) 31 (-) 20 (-) loc .11 21 (-) 33 (-) 21 (-) loc. 12 25 (-) (-) 25 (-) loc. 13 26 (-) (-) 26 (-) loc. 14 27 (-) (-) 27 (-) loc. 15 31 (-) (-) 31 (-) loc. 16 32 (-) (-) 32 (-) loc. 17 33 (-) (-) 33 (-) it is important to note that the average power shown in tables 1, 2, 3, and 4 is the average maximum power of the pv module considering that it is assumed that the pv module operates in the mpp at every moment and that the shading pattern (horizontal, vertical and diagonal) consists of two different shades. having that in mind, the first column of tables 1, 2, and 3 contains the results obtained for the first shade in the shading patterns, the second column shows the results referring to the second shade, and in the third column of tables 1, 2, and 3 are the results generated in the case where the first and the second shade are present on the pv module surface for the same time. table 2 the optimal number and location of bypass diodes and the generated average powers of the pv module with and without optimal placement in the case of a vertical shading pattern sp v1 v2 v1+2 pavr_3 0.475345 (0.591937) 0.475345 (0.573705) 0.475345 (0.582821) pavr 0.600600 (0.601617) 0.475345 (0.573705) 0.525455 (0.587661) nbd 4 (4) 3 (3) 4 (4) loc. 1 7 (7) 13 (13) 7 (7) loc. 2 13 (13) 25 (25) 13 (13) loc. 3 25 (25) (-) 25 (13) 348 n. krstić, d. tasić, d. klimenta table 3 the optimal number and location of bypass diodes and the generated average powers of the pv module with and without optimal placement in the case of a diagonal shading pattern sp d1 d2 d1+2 pavr_3 0.475345 (0.602685) 0.251553 (0.579643) 0.363447 (0.591162) pavr 0.638011 (0.640442) 0.442324 (0.579643) 0.515516 (0.610041) nbd 6 (6) 9 (3) 11 (6) loc. 1 13 (13) 13 (13) 13 (13) loc. 2 25 (25) 14 (25) 14 (25) loc. 3 26 (26) 19 (-) 19 (26) loc. 4 31 (31) 21 (-) 21 (31) loc. 5 33 (33) 25 (-) 25 (33) loc. 6 (-) 28 (-) 26 (-) loc. 7 (-) 31 (-) 28 (-) loc. 8 (-) 35 (-) 31 (-) loc. 9 (-) (-) 33 (-) loc. 10 (-) (-) 35 (-) locations of bypass diodes shown in tables 1, 2, and 3 are the ordinal numbers of pv cells (figures 3, 4, and 5) in front of which the second connection point of the bypass diode is located. the location of the second connection point of the last bypass diode is not shown in tables 1, 2, and 3 because it is always behind the last pv cell in the module (index 37). also, in tables 1, 2, and 3 values in brackets refer to the case where the solar irradiance of the shaded pv cells is 70%, and values without brackets are obtained for the case where solar irradiance is 30% of the solar irradiance of the unshaded pv cells. it is important to note that the average power of the pv module shown in the results is expressed per unit, where the base unit is the product of open circuit voltage and short circuit current in the case without partial shading (without partial shading the power of the mpp of the pv module has the value of the fill factor of the pv cell pmpp0 = ffc = 0.76 p.u.). from tables 1, 2, and 3 it can be seen that the average power generated by the pv module in the case of the optimal placement of bypass diodes is greater than the average power of the module with the standard configuration of the bypass diodes. this improvement in energy production is more significant in the case with lower solar irradiance of the shaded pv cells (30% of the solar irradiance of the unshaded pv cells). the reason for this is that the location of the mpp of the pv module changes with the reduction of solar irradiance. if the decrease in the solar irradiance of the shaded pv cells is not so great then the reduction of the current of the pv module will be lower than the reduction of the voltage of the module if bypass diodes start to conduct, in this case, the mpp will be located in a high voltage area (as there are no bypass diodes). otherwise, if a decrease in solar irradiance of the shaded pv cells is significant then the reduction of the voltage of the pv module, if bypass diodes start to conduct, will be lower than the reduction of current, if bypass diodes are not turned on, locating the mpp of the pv module in lower voltage areas. taking this into account, and the fact that ga minimizes the number of bypass diodes if that does not reduce the produced energy of the pv module, it is clear why in some cases when the solar irradiance of the shaded pv cells is 70% the optimal placement of bypass diodes in the pv module is the optimal placement of bypass diodes in pv modules for energy production improvement under... 349 same as in standard configuration with 3 bypass diodes (the number and location of bypass diodes are irrelevant because they do not conduct current when module operates in the mpp). also, results in tables 1, 2, and 3 show that the optimal number and location of the bypass diodes are greatly affected by the shading pattern of the pv module. analyzing the optimal locations of the bypass diodes in tables 1, 2, and 3 it can be seen that ga placed bypass diodes to separate shaded from unshaded pv cells. this can be explained by the fact that the voltage generated by the unshaded pv cell will be lost if it is bypassed by the diode, which will not be turned on if all the pv cells in a group are unshaded. considering this, it is clear why the optimal number of bypass diodes is highest in the horizontal and lowest in the vertical shading pattern. the average powers of the pv module obtained in the case of the random shading pattern for the different number of bypass diodes (3, 6, 9, 12, 18, and 36) in the pv module are shown in table 4. the first column of this table refers to the case where shade within the random shading pattern changes two times, in the second column shade changes 10 times, and the third column refers to the case where a random shading pattern consists of 50 different shades. this is done to simulate different dynamics of shading the pv module’s surface. taking into account that in this shading pattern, the shape and the intensity of shade are random (solar irradiance of each pv cell is assumed to have a random value between 20% and 80%) there is not much sense for the optimal location of bypass diodes, so they are evenly distributed along the pv module, each protecting the same number of pv cells. table 4 the average power generated by the pv module with 3, 6, 9, 12, 18, and 36 bypass diodes in the case of a random shading pattern sp r_2 r_10 r_50 pavr_3 0,188651 0,182620 0,185346 pavr_6 0,188651 0,182620 0,185666 pavr_9 0,189662 0,183853 0,187604 pavr_12 0,191286 0,187084 0,190749 pavr_18 0,193257 0,190336 0,194517 pavr_36 0,204865 0,196086 0,206428 from table 4 it can be seen that the average power of the pv module increases by 10% if the number of bypass diodes rises from 3 to 36 (each pv cell has the bypass diode), regardless of the number of shades in the random shading pattern. the reason for the low values of the average powers of the pv module, for this shading pattern, is the lower limit for solar irradiance of the pv cells, which is only 20%. the results from table 4 can be explained by the fact that increasing the number of bypass diodes increases the possible paths for current in the pv module, which has a positive effect in the case of dynamic and unpredictable shading. figures 6, 7, and 8 show the p-v characteristics of the pv module in the case of a horizontal, vertical, and diagonal shading pattern, respectively, with and without optimal placement of bypass diodes in the pv module. in the case without optimal placement, the pv module has the standard configuration with 3 bypass diodes. 350 n. krstić, d. tasić, d. klimenta fig. 6 power of the pv module with and without optimal placement of bypass diodes under a horizontal shading pattern with two levels of shade the p-v characteristics in figures 6, 7, and 8 are generated using the first shade of the mentioned shading patterns (shading patterns h1, v1, and d1 in tables), for the cases where solar irradiance of the shaded pv cells are 30% and 70% of the solar irradiance of the unshaded pv cells. fig. 7 power of the pv module with and without optimal placement of bypass diodes under a vertical shading pattern with two levels of shade optimal placement of bypass diodes in pv modules for energy production improvement under... 351 fig. 8 power of the pv module with and without optimal placement of bypass diodes under a diagonal shading pattern with two levels of shade figures 6, 7, and 8 show that the optimal placement of the bypass diodes changes the pv characteristic of the pv module, achieving higher power in the mpp. based on figures 6, 7, and 8 it can be seen that the p-v curve of the pv module has two characteristic local optimums. one local optimum is located in lower voltages (when bypass diodes are turned on), and the other optimum is located in a high voltage area (when bypass diodes are not conducting current and the current of the module is limited with the current of the shaded pv cell). as can be seen from figures 6, 7, and 8 when the solar irradiance is reduced, the power of the first local optimum is increased becoming the global optimum, and the power of the other optimum is decreasing becoming the local optimum. figure 9 represents the p-v characteristics of the pv module in the case of a random shading pattern. the p-v characteristics are obtained for the cases of 3, 12, and 36 bypass diodes uniformly distributed among the pv cells in the pv module. fig. 9 power of the pv module with 3, 12, and 36 bypass diodes under a random shading pattern 352 n. krstić, d. tasić, d. klimenta figure 9 shows, that in the case of a random shading pattern, a greater number of bypass diodes creates more distorted p-v characteristics with many small local optimums and slightly higher global optimum. also, it is important to note that the explanation for the negative power on the pv module’s p-v characteristics shown in figures 6, 7, 8, and 9 lies in the fact that 1 p.u. voltage refers to the open circuit voltage of the unshaded pv module. the shaded pv module has a lower open circuit voltage, depending on the solar irradiance reduction, resulting in negative currents and powers for voltage close to 1 p.u. 7. conclusion this paper proposes an approach for the optimal placement of bypass diodes in the pv module under partial shading to increase the module’s energy production. the results show that the pv module’s energy production under partial shading can be significantly increased, especially for horizontal and diagonal shading patterns, if the bypass diodes are optimally placed. the optimal number and the optimal locations of bypass diodes in the pv module, determined by the metaheuristics of ga, prove to perform classification of the pv cells on groups of shaded and unshaded pv cells. also, the obtained results show that the optimal placement of bypass diodes in the pv module has a greater impact on the energy production improvement if solar irradiance of the shaded pv cells has low values. this energy increment is between 30% and 80 % depending on the shading pattern, when the solar irradiance of the shaded pv cells is 70 % reduced compared to the unshaded cells. in the case of unpredictable and stochastic shading of the pv module surface (random shading pattern), the optimal placement of bypass diodes does not have much effect on the improvement of the pv module energy production and only benefit comes from increasing the number of bypass diodes (ideally each pv cell has one bypass diode). acknowledgment: this paper was supported by the ministry of science, technological development and innovation of the republic of serbia [grant number 451-03-65/2024-03/200102]. references [1] j. mikulović and ž. đurišić, solarna energetika, beograd, akademska misao, 2019. [2] n. klasen, f. lux, j. weber, t. roessler and a. kraft, "a comprehensive study of module layouts for silicon solar cells under partial shading", ieee j. photovolt., vol. 12, no. 2, pp. 546-556, 2022. [3] f. bayrak, g. erturk and h. oztop, "effects of partial shading on energy and energy efficiencies for photovoltaic panels", j. clean. prod., vol. 164, pp. 58-69, 2017. [4] h. zair, b. asaei, s. farhangi, m. korevaar and m. zeman, "quantification of shading tolerability for photovoltaic modules", ieee j. photovolt., vol. 7, no. 5, pp. 1390-1399, 2017. [5] c. saiprakash, a. mohapatra, t. sudhakar babu and h. haes alhelou, "a novel benzene structured array configuration for harnessing maximum power from pv array under partial shading condition with reduced number of cross ties", ieee access, vol. 10, pp. 129712-129726, 2022. [6] z. abdelaziz, a. mohammedi, d. fares, m. nasser-eddine and d. rekioua, "investigation and analysis of different solar photovoltaic array configurations with and without bypass diodes under various partial shading conditions", in proceedings of the 6th international conference on advances in mechanical engineering, turkey, october 2021, pp. 1-8. optimal placement of bypass diodes in pv modules for energy production improvement under... 353 [7] k. singh, t. afrin chandel, k. siddiqui and a. mallick, "effect of bypass diode under partial shading in spv module", int. j. eng. adv. technol. (ijeat), vol. 8, no. 5, pp. 2215-2219, 2019. [8] m. mohamed, a. zaki diab and h. rezk, "partial shading mitigation of pv systems via different metaheuristic techniques", renew. energy, vol. 130, pp. 1159-1175, 2019. [9] j. li, y. wu, s. ma, m. chen, b. zhang and b. jiang, "analysis of photovoltaic array maximum power point tracking under uniform environmental and partial shading condition: a review", energy reports, vol. 8, pp. 13235-13252, 2022. [10] b. yang, t. zhu, j. wang, h. shu, t. yu, x. zhang, w. yao and l. sun, "comprehensive overview of maximum power point tracking algorithms of pv system under partial shading condition", j. clean. prod., vol. 268, p. 121983, sept. 2020. [11] h. ouatman and n. boutammachte, "a genetic algorithm approach for flexible power point tracking in partial shading conditions", results eng., vol. 24, p. 102940, 2024. [12] s. ganesan, p. winston david, p. kumar balachandran and i. colak, "power enhancement in pv arrays under partial shaded conditions with different array configurations", heliyon, vol. 10, no. 4, p. e23992, 2024. [13] a. tarabsheh, m. akmal and m. ghazal, "improving the efficiency of partially shaded photovoltaic modules without bypass diodes", electronics, vol. 10, no 9. p. 1046, 2021. [14] s. saha, s. akter, k. mahto, p. das, a. chakraborty and g. awasthi, "improvement in power efficiency of photovoltaic array under shading conditions using bypass diode", int. j. renew. energy res., vol. 6, no. 2, pp. 628-636, 2016. [15] m. duong, g. sava, g. ionescu, h. necula, s. leva and m. mussetta, "optimal bypass diode configuration for pv arrays under shading influence", in proceedings of international conference on environment and electrical engineering and industrial and commercial power systems europe (eeeic/i&cps europe), milano, italy, june 2017, pp. 1-5. [16] t. yu, y. hung, y. lin, c. chen and y. liou, "optimal configuration of bypass diodes for a highconcentration photovoltaic system", in proceedings of the 5th international conference on electrical engineering and automatic control. lecture notes in electrical engineering, vol 367. springer, berlin, heidelberg, 2016, pp 845-856. [17] s. li, x. zhang, d. xie and w. zhao, "research on optimal configurations of bypass diodes in pv module under shading conditions", taiyangneng xuebao/acta energiae solaris sinica, vol. 34, pp. 1768-1774, 2013. [18] m. f. jalil, s. khatoon, i. nasiruddin and r. c. bansal, "review of pv array modeling, configuration and mppt techniques", int. j. model. simul., vol. 42, no. 4, pp. 533-550, 2022. [19] n. shiradkar, e. schneller, n. dhere and v. gade, "effect of shading on the switching of bypass diodes in pv modules", in proceedings of conference: spie solar energy + technology, san diego, united states, oct. 2014, vol. 9179, p. 91790c. [20] m. kumar, k. panda, r. naayagi, r. thakur and g. panda, "enhanced optimization techniques for parameter estimation of single-diode pv modules", electronics, vol. 13, no. 15, p. 2934, 2024. facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 187-201 https://doi.org/10.2298/fuee2102187g © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper generation of sequences of strong electric monopulses in nitride films volodymyr grimalsky1, svetlana koshevaya1, jesus escobedo-alatorre1, anatoliy kotsarenko2 1center for investigations on engineering and applied science (ciicap), institute for investigations on basic and applied science (iicba), autonomous university of state morelos (uaem), cuernavaca, mor., mexico. 2faculty of engineering, autonomous university of carmen (unacar), ciudad del carmen, camp., mexico abstract. this paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-gan and n-inn films. the stable numerical algorithms have been used for nonlinear 3d simulations. the sequences of the monopulses of the strong electric field of 3 – 10 ps durations each can be excited. the bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. the doping levels should be moderate 1016 –1017 cm-3in the films of  2 m thicknesses. the input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 ghz in n-gan films, whereas in n-inn films they are lower, up to 20 ghz. the sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. these nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. in the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains. key words: nitride films, negative differential conductivity, picosecond pulses, nonlinearity received august 26, 2020; received in revised form november 27, 2020 corresponding author: volodymyr grimalsky ciicap, iicba, autonomous university of state morelos (uaem), av. universidad 1001, col. chamilpa, cuernavaca 62209, mor., mexico e-mail: v_grim@yahoo.com * an earlier version of this paper was presented at the 31st international conference on microelectronics (miel 2019), september 16-18, 2019, in niš, serbia [1]. mailto:v_grim@yahoo.com 188 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko 1. introduction the nitrides gan, inn are used in the microwave range and the lower part of terahertz (thz) range f = 100 ghz – 1 thz to fabricate powerful active and nonlinear devices like transistors, generation diodes, and integrated power amplifiers [2-12]. recently it was demonstrated that n-inn possesses the increased values of the negative differential conductivity (ndc), probably the highest ones between the semiconductor materials [13,14]. the space charge waves (scw) in n-gan and n-inn films can be amplified due to ndc, when the magnitudes of bias electric fields are higher than the critical, or threshold, ones [15]. the linear amplification of scw in n-gan and n-inn films was investigated in the frequency range f < 800 ghz, where the non-local dependence of the electron velocity on the average electron energy was taken into account [15-17]. the typical thicknesses of the films were 2l = 0.2 – 1 m, their lengths were 10 – 50 m, see fig. 1. because the frequency range of amplification of scw in the nitride films is wide and covers the lower part of thz range, it is of interest to investigate the excitation of strong nonlinear monopulses of picosecond durations without internal carrier frequency [1,18,19]. these monopulses occupy the wide frequency range f >100 ghz. the maximum values of the spatial increments of the linear amplification of scw in the nitride films achieve at the frequencies f > 50 ghz. those differ from the bulk crystals where the maximum increments correspond to the zero frequency [20]. therefore the strong monopulses in semiconductor films with ndc differ from the ordinary domains in the bulk semiconductors [20]. under the excitation of the domains the electric field out of them is essentially below the threshold value, whereas in the films the electric field out of the monopulses practically does not change and is equal to the bias one [1,18,19]. moreover, only a single domain can propagate simultaneously within the crystal, and the next domain is excited when the previous one leaves the crystal. the strong monopulses can be excited when the bias electric field slightly exceeds the critical value of the electric field for ndc and the doping levels are moderate [1,18,19]. note that the domain regime of operation is not preferable in the bulk gunn diodes, because of its lower efficiency compared with another regimes, like the limitation of accumulation of space charge one [20]. the most interesting case is the excitation of sequences of strong monopulses from input envelope pulses of small amplitudes with the carrier frequency of the microwave range 10 – 50 ghz. such an excitation was not considered earlier and is important for the practical needs of the modulation of the optical radiation by scw in laser devices [21-25]. under such an excitation the repetition rate of the output monopulses is determined by the input carrier frequency. this paper is devoted to the investigations of the generation of sequences of output strong monopulses under excitation by input microwave pulses of small amplitudes. in the films the influence of the boundaries on the properties of the films is principal. namely, at the boundaries the electron mobility can be lower than in the center of the film and, moreover, ndc can be absent at the boundaries due to additional mechanisms of carrier scattering. in the last case the non-uniform doping can be used that is increased in the center of the film x = l and is decreased at the boundaries of the film x = 0, x = 2l, see fig. 1. in the present consideration the permittivities below and above the film are 1 = 4, sio2, and 3 = 1, air. generation of sequences of strong electric monopulses in nitride films 189 a) b) fig. 1 the geometry of the problem. parts a), b) are views from different directions. the nitride film occupies the region 0 ≤ x ≤ 2l, 0 ≤ y ≤ ly, 0 ≤ z ≤ lz. nd(x) is the nonuniform doping profile. the input antenna is i. the nonlinear space charge waves are formed as strong monopulses of picosecond durations at the output antenna ii. the pulses are generally localized also along oy axis. 2. basic equations the non-local electron hydrodynamics can be used to investigate nonlinear scw in the nitride films [1, 15-19, 26, 27]. in this approach the dynamics of the electron gas is described by the full electron concentration n in all valleys jointly, the average electron velocity v, and by the average electron energy w. this model is valid for the nitrides ngan and n-inn and cannot be applied for n-gaas [27], because in the last material the occupation of the different valleys is principally important to calculate the diffusion coefficient. the equations of the balance of the number of electrons, the linear momentum, and of the electron energy are: * 0* 00 * 2 * ( ) 0; ( ) ( ) 1 ( ) ( ); ; ( ) 1 (( ) ) ( ) ( ); 2 ( ) 5 ( ); . 3 2 2 ( ) p w p n dv v ee div nv v v t dt t m w nt v w e e nm w dw ee v nv t w w w dt n m w v nt where t w m w         + =  +  = −    − = − =  −   −  − − = − = (1) here n is the total electron concentration, v is the average velocity, w is the average electron energy; p, w are the effective relaxation frequencies of the electron momentum and energy, m* is the effective electron mass, t is the electron temperature in energetic units,  is the electron thermoconductivity coefficient. w00 = 0.039 ev is the average electron energy at 300 k; e00  e0z is the bias constant electric field. it is assumed that p, w, m* are the functions of the average electron energy w. an influence of the thermoconductivity 190 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko on the electron gas dynamics is not essential up to the frequencies f  2 – 3 thz [15]. the electron kinetic energy for the investigated processes is one order lower than the average electron energy, so it is t  (2/3)w. the utilized dependencies of the drift velocity and the average electron energy on the electric field for the zinc blende n-gan and for n-inn [28] are presented in fig. 2. it is assumed that in the non-uniform films ndc at the surfaces is absent, as depicted by the dash curves 1, 2. the results of our investigations are tolerant to changes of the dependencies of the drift velocity at the surfaces of the films. a) b) fig. 2 parts a), b) are dependencies of the drift velocity v and the average electron energy w on the electric field for the zinc blende n-gan, solid curve 1, and n-inn, solid curve 2. dash curves 1 and 2 are the used dependencies v(e) at the boundaries of the n-gan and n-inn non-uniform films where ndc is absent. the dependencies of the relaxation frequencies were computed from eqs. (1) in the stationary case /t = 0 [1, 15-19]; the dependencies in fig. 2, a), b), were used.. their computed values are p 2·1013 s-1 for both nitrides; w  1012 s-1 for inn, w  1013 s-1 for gan [15]. thus, it is p >> w. therefore at the frequencies f < 1 thz the inertia of the electron gas can be neglected: * * 1 ( ) ( ) ( ). p p e d v e nt w e nw nwm nm     −  = −  (2) here , d are the coefficients of the electron mobility and the diffusion: * * ; p p e t d t em m     = =  . (3) the relaxation frequency w in n-inn is smaller than in n-gan; this fact limits the frequency range of the amplification of scw in the n-inn films [15]. below the processes are considered in the wide frequency range f  300 ghz, or with the temporal scales 3 ps, so the using of eq. (2) results in the following diffusion-drift equations for the total electron concentration: generation of sequences of strong electric monopulses in nitride films 191 2 2 2 1/2 00 0, ; ; ; ( ) , ( ) , ( ) ; ( ) , 4 ( ), ( ) , 3 ( ) , , . yx z x x y y z z x x y y z z d z x y w z x y jj jn n j nv d t x y z x n n j nv d j nv d v e e y z v v e e v e e e e v v v e e e e e w t e e e e z x y            + + + = = −        = − = − =   = =   + =  + +     = − = − = −    (4) the simplest model of the taking account of the non-local dependence of the drift velocity v is applied here, to estimate the influence of the nonlocality. the characteristic time of nonlocality was calculated in [16,17], it is of about 4/(3w(w)). in eqs. (4) vd(e) is the stationary dependence of the drift velocity on the electric field presented in fig. 2, a. in the simulations presented below an influence of the nonlocality is not essential, as it has been checked; such an influence results in <1% variations. thus, the diffusion-drift equation is valid here with the local dependence of the drift velocity v on the electric field e. the equations for the dynamics of the electron gas should be added by the poisson equation for the electric field potential. note that the potential 0 ( ) ( , , , )x z x y t  = + includes both the stationary part 0(x) due to the possible non-uniform doping and the variable in time one  due to the propagation of scw: 2 2 2 0 2 2 2 2 ( ( )) , 0 2 ; 0, 0, 2 . de n n x x l x y z x x l      − −      + + =        (5) the non-uniform doping is considered as: 2 0( ) exp( (( ) / ) ).d d dn x n x l x= − − (6) here xd is the scale of the non-uniform doping. under the non-uniform doping the stationary concentration n0(x), the electric potential 0(x), and the additional electric field e0(x) have been calculated from the following set of equations: 2 2 0 0 0 0 0 2 2 0 0 0 2 0 0 ( ) ( ) ( ( ) ( )), ( ) ; ( ) ( ) ( ) exp( ), . ( ) exp( ) d l d l b e b e d x d xe n x n x e x dxdx n x dx e x n x c c k t e x dx k t       = − −  − =  − = −   (7) 192 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko eqs. (7) have been solved by the iterative newton method, which is analogous to the gummel one [29]. it yields the rapid convergence; the obtained accuracy is <10-12. the poisson equation for the variable electric potential of scw is 0 2 2 2 0 2 2 2 2 ( ( )) , 0 2 ; 0, 0, 2 . e n n x x l x y z x x l      − −      + + =        (8) 3. linear amplification of scw to investigate the amplification of linear scw, the solution of linearized eqs. (4), (8) is searched as the travelling waves: , , ~ exp( ( ))n w i t kz  − . (9) the circular frequency   2f is real here, whereas the longitudinal wave number is complex k  k’+ik’’. the amplification of scw occurs when k’’ > 0. in the non-uniform films the dependence of the electron mobility on the coordinate x is taken as 1 1 2 2 2 0 0 ( ) ( ) ( ), ( ) exp( ( / ) ) exp( ((2 ) / ) . x x x x x l x x    = − −    − + − − (10) here 1, 2 are the mobilities in the center x = l and at the boundaries x = 0, x = 2l of the film taken from fig. 2, a; x0 is the scale of the non-uniformity of the conductivity. in the center ndc is present whereas at the boundaries it is absent. in fig. 3 there are the results of the simulations of the dependencies of the spatial increments of amplification k’’ on the frequency f of linear scw. for all cases the thickness of the films is 2l = 0.5 m. this thickness is quite large to provide the using of scw for the modulation of laser radiation in the waveguides with the nitride films. the curves 1, 2 correspond to uniform films. the curve 3 is for the film with non-uniform dependence of the electron mobility  on x, as in eq. (10), but with the uniform doping. the curves 4, 5 are for both the non-uniform dependence of  (x) and the non-uniform doping nd (x), eq. (6). note that the critical field of ndc in n-gan is ec = 1.25105 v/cm, in n-inn it is ec = 0.49105 v/cm. in all cases the bias electric field corresponds to relatively small values of ndc, as it is necessary for the excitation of strong electric monopulses in the nonlinear regime [1,18,19]. when the bias field exceeds the value e00 > 1.4105 v/cm in n-gan and e00 > 0.54105 v/cm in n-inn, the linear increments of amplification increase sharply and under the nonlinear regime the stable monopulses are not excited there [18]. in fig. 3 the part a) is for n-gan film. the curve 1 is for the bias electric field e00 = 1.3105 v/cm, the equilibrium electron concentration is n0 = nd = 1017 cm-3. the curve 2 is for e00 = 1.35105 v/cm, n0 = nd = 5·1016 cm-3. the curve 3 is for the film with non-uniform conductivity with the scale x0 = 0.1 m (see eq. 10), e00 = 1.4105 v/cm, n0 = nd = 1017 cm-3. the curve 4 is for the film with non-uniform conductivity with the scale x0 = 0.1 m, e00 = 1.3105 v/cm; the scale of the non-uniform doping is xd = 0.2 m, nd0 = 1017 cm-3. the curve generation of sequences of strong electric monopulses in nitride films 193 5 is for e00 = 1.3105 v/cm, xd = 0.2 m, nd0 = 1.531017 cm-3. the last case corresponds to the value of the electron concentration averaged along ox axis as 1017 cm-3. in the films with the non-uniform conductivity the increments are essentially smaller than in the uniform films. the increments can be increased in the films with the nonuniform doping, i.e. due to the localization of the concentration of the electrons of conductivity in the center of the films near x = l. the analogous results have been obtained for n-inn films, see fig. 3, b. but the bias electric fields and doping levels are smaller there in comparison with the case of n-gan films. for all cases the bias electric field is e00 = 0.52105 v/cm. the curve 1 is for the electron concentration n0 = nd = 1.5·1016 cm-3. the curve 2 is for n0 = nd = 2·1016 cm-3. the curve 3 is for the film with the non-uniform conductivity x0 = 0.1 m, n0 = nd = 2·1016 cm-3. the curve 4 is for the non-uniformly doped films x0 = 0.1 m, xd = 0.2 m, nd0 = 2·1016 cm-3. the curve 5 is for x0 = 0.1 m, xd = 0.2 m, nd0 = 3.06·1016 cm-3 that corresponds to the averaged electron concentration 2·1016 cm-3. thus, the typical frequency range of the linear amplification of scw is of about 100 ghz and more. the maximum values of the increments reach at the frequencies f = 50 – 150 ghz in the films with the moderate doping and under the bias fields slightly above the threshold values. at the lengths of the films lz ≥ 20 m it is possible to obtain the amplification of linear scw exp(k’’lz) ≥ 10. after the linear amplification stage, scw are subject to strong nonlinear processes that are investigated below in section 4. a) b) fig. 3 spatial increments of amplification of linear scw. part a) is for n-gan fims, b) is for n-inn films. curves 1, 2 are for uniform films, curve 3 is for non-uniform conductivity but uniform doping; 4, 5 are for non-uniform conductivity and non-uniform doping. the finite size of scw along oy axis results in decreasing the increment of amplification [24], i.e. for amplified waves in active media the wave diffraction is equivalent to diffusion. 4. excitation of sequences of nonlinear monopulses the nonlinear dynamics of sequences of scw nonlinear pulses has been simulated by means of the diffusion-drift equation jointly with the poisson equation added by boundary conditions eqs. (4), (8). 194 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko the equation for the electron concentration has been solved by the splitting with respect to physical factors [30-32]. the first fractional step is along ox axis, the second one is along оy, the third one is along oz. the unconditionally stable implicit difference schemes have been used of the second order of approximation. because the spatial scales along oz axis and ox, oy ones differ 1 order and more, it is important to preserve the balance of the electric charge at the surfaces, namely to use the integral interpolation method to derive the difference approximations both the volume equations and for the boundary conditions [31]. it is assumed the absence of the surface charge at the boundaries of the film x = 0, x = 2l. here the electric boundary conditions are the continuity of the potential and the normal component the electric induction. at the ends of the film the boundary conditions for the concentration are n(z=0,x,y)=n0(x) and n/z(z=lz) = 0, the last one corresponds to the ohmic junctions [20]. the boundary conditions n(y=0 or ly, z, x) = n0(x) are used at у = 0 and у = lу. but in the simulations the film is assumed enough wide, so an influence of the boundary conditions along оy axis is not essential. for the variable electric potential the boundary conditions are  = 0 at z = 0, z = lz. the poisson equation for the electric potential  has been solved by the fast fourier transform with respect to z, sine-like, and у, cosine-like ones [30], for real functions. along ox axis the finite difference method has been used of the second order. to get a suitable accuracy ≤1% the number of the points of the computation grid along oz axis should be ≥ 512, along oy one it should be ≥64, and along ox axis it should be ≥50. because the splitting with respect to physical factors has been applied, i.e. the method of the total approximation, the temporal step has been chosen ≤ 0.1 ps. the accuracy has been checked by means of 1) checking the approximation of the basic equations at each temporal step; 2) re-simulations with another numbers of the numerical grid points along each axis; 3) using various finite difference approximations, like the central differences and the monotonic schemes; 4) comparison of 3d simulations with 2d ones; 5) comparison of the simulations at the initial linear stage of the dynamics with the analytical results. the initial pulses of scw are excited by wide-band planar waveguide; the exciting electric field is at the input antenna: 2 2 21 1 0 0 0 / 2 exp( ( ) ( ) ( ) ) sin( ). yexc z y lt t z z e a t t z y −− − = − − −   (11) here  is the carrier circular frequency of the envelope pulse (do not mix with the circular frequency  from the previous section), z1, z0 are the positions of the center of the exciting antenna and its half-width, a is the small input amplitude, a << e00. the exciting field is uniform along x, 0 < x < 2l. for all cases of simulations the thickness of the film is 2l = 0.5 m. the similar results have been obtained for the films of the thicknesses 2l  2 m. at higher thicknesses the excited pulses are similar to the domains in the bulk gunn diodes. the lengths of the films are lz  30 m. in the case when the bias electric field e00 is essentially higher than the critical one and corresponds to the maximum of ndc, the initial strong amplification at the linear stage occurs. but then the amplified pulse deforms at the nonlinear stage of amplification and as a result several powerful oscillations are formed at the output [17]. therefore, to create stable nonlinear monopulses, the bias electric field should be chosen slightly above the threshold of ndc. namely in this case the short monopulses are formed at the essentially nonlinear stage generation of sequences of strong electric monopulses in nitride films 195 at the output antenna z = z2  lz. also the moderate doping levels should be applied n0 = 3·1016 –1017 cm-3 for n-gan and n0 = 1016 – 3·1016 cm-3 for n-inn films. below the typical results of numerical simulations are presented. there are dependencies on time t of the variable part of z-component of the electric field of scw in the center of the output antenna y = ly/2: 2 00 0( , 2 , / 2, )z y ze z z x l y l t e e e= = =  − − . the three cases have been considered. the first one is for the uniform nitride films, the second one is for the films with the non-uniform conductivity, see eq. (10); the third case is for the films with both the non-uniform conductivity and the non-uniform doping as in eq. (6). for all the cases the transverse width of the films is ly = 100 m, the initial transverse width of the input field is y0 = 20 m. in figs. 4-6 there are the results for the uniform films. in all figs. the left panels are general views, the right ones are the detailed views. in fig. 4 the parameters are as follows. there are n-gan films, the carrier input frequency is  = 1.51011 s-1. for the parts a), b) the bias electric field is e00 = 1.35·105 v/cm, the constant electron concentration is n0 = nd = 5·1016 cm-3. the parameters of the input pulse are a = 3 kv/cm, t1 = 600 ps, t0 = 300 ps, z1 = 10 m, z0 = 0.5 m, see eq. 11. the length of the film is lz = 55 m, the output antenna is at z2 = 54 m. for the parts c), d) they are e00 = 1.3·105 v/cm, n0 = nd = 9·1016 cm-3; a = 3 kv/cm, t1 = 600 ps, t0 = 300 ps, z1 = 10 m, z0 = 0.5 m; lz = 40 m, the output antenna is at z2 = 39 m. the parts a), c) are general views, b), d) are detailed ones. a) b) c) d) fig. 4 the shapes of strong electric monopulses at the output antenna in uniform n-gan film. the input carrier circular frequency is  = 1.5·1011 s-1. parts a), c) are general views, b), d) are detailed ones. 196 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko in fig. 5 there are n-gan films, the carrier input circular frequency is  = 21011 s-1. the parameters are the same as for fig. 4, parts a), b). a) b) fig. 5 the shapes of strong electric monopulses at the output antenna in uniform n-gan film;  = 2·1011 s-1. in fig. 6 there are n-inn films, the carrier input circular frequency is  = 1.51011 s-1. the parameters are e00 = 0.52·105 v/cm, n0 = nd = 1.5·1016 cm-3; a = 3 kv/cm, t1 = 600 ps, t0 = 300 ps, z1 = 10 m, z0 = 0.5 m; lz = 60 m, the output antenna is at z2 = 59 m. a) b) fig. 6 the shapes of strong electric monopulses at the output antenna in uniform n-inn film;  = 1.5·1011 s-1. in figs. 7, 8 there are the results for the films with the non-uniform conductivity. the scale of the non-uniformity is x0 = 0.1 m there. in fig. 7 there are n-gan films. the parameters are e00 = 1.4·105 v/cm, n0 = nd = 5·1016 cm-3; a = 2 kv/cm, t1 = 600 ps, t0 = 300 ps, z1 = 10 m, z0 = 0.5 m; lz = 50 m, the output antenna is at z2 = 49 m. for the parts a), b) the carrier input circular frequency is  = 21011 s-1; for the parts c), d) it is  = 1.51011 s-1. generation of sequences of strong electric monopulses in nitride films 197 a) b) c) d) fig. 7 the shapes of strong electric monopulses at the output antenna in n-gan film with the non-uniform conductivity. in fig. 8 there are n-inn films. the carrier input circular frequency is  = 1.51011 s-1. the parameters are e00 = 0.53·105 v/cm, n0 = nd = 2·1016 cm-3; a = 3 kv/cm, t1 = 600 ps, t0 = 300 ps, z1 = 10 m, z0 = 0.5 m; lz = 53 m, the output antenna is at z2 = 52 m. a) b) fig. 8 the shapes of strong electric monopulses at the output antenna in n-inn film with non-uniform conductivity;  = 1.5·1011 s-1. from figs. 4 – 8 it is seen that the sequences of strong electric monopulses are formed at the output antenna. the maximum values of the output pulses exceed several times the bias electric field e00. the durations of the output monopulses are 3 – 10 ps, so the total frequency range is 100 – 300 ghz. the monopulses are formed practically without any 198 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko pedestal and differ from the domains of strong electric field in bulk semiconductors [20]; the domains possess the values of electric fields essentially below the ndc threshold outside of the domain. the repetition rate of the output monopulses is determined by the input carrier circular frequency . moreover, the peak values of the monopulses repeat the shapes of the envelopes of the input microwave pulses. in n-gan films the input carrier circular frequency should be   2·1011 s-1, in n-inn films it should be   1.5·1011 s-1. at higher carrier frequencies the behavior of the sequence of output pulses becomes unstable, because there exists the mutual influence of neighboring output monopulses. the peak values of the monopulses are higher in n-gan films, so namely n-gan films are preferable for excitations of sequences of strong monopulses, despite the lower values of ndc there. also the input carrier frequency range is wider in n-gan films, as mentioned above. the results of numerical simulations are tolerant to changes of the parameters of input pulses and of the lengths of the films lz. under the uniform doping the shapes of the output pulses do not depend on the transverse widths of the input pulse у0 when у0 ≥ 20 m. at smaller initial widths у0 < 20 m the maximum values of the electric field of monopulses decrease due to smaller increments of amplification at the linear stage of the scw dynamics. in fig. 9 there are the results for the n-gan films with both the non-uniform conductivity and the non-uniform doping. the scales of the non-uniform conductivity and the non-uniform doping are x0 = 0.1 m and xd = 0.2 m there. the parameters are e00 = 1.3·105 v/cm, n0 = nd = 1017 cm-3; a = 2 kv/cm, t1 = 600 ps, t0 = 300 ps, z1 = 10 m, z0 = 0.5 m; lz = 50 m, the output antenna is at z2 = 49 m. a) b) fig. 9 the shapes of strong electric nonlinear pulses at the output antenna in n-gan film with both the non-uniform conductivity and with the non-uniform doping;  = 1.5·1011 s-1. under the non-uniform doping the sequences of the monopulses are excited rather due to the non-uniformity of the electric field near the input end of the film z = 0 than due to the input field at the exciting antenna. there is a principal difference between the films with the non-uniform doping and with uniform one. in the uniformly doped films the monopulses are not electric domains, whereas under the non-uniform doping the nonlinear pulses possess a similarity to the domains of the strong field in the bulk semiconductors. namely, the values of the electric field out of the nonlinear pulses are essentially below the threshold ones and the generation of sequences of strong electric monopulses in nitride films 199 durations of the nonlinear pulses are essentially longer ≥20 ps. moreover, in the uniformly doped films the repetition rate of the monopulses at the output antenna is determined by the input carrier circular frequency , whereas under the non-uniform doping the repetition rate is determined by the distance between z = 0 and the position of the output antenna z = z2 only. note that under the excitation of nonlinear pulses from a single input pulse in the films with non-uniform doping the output pulse can be similar to the strong monopulse like in uniform films [19]. they are shorter and are practically without the pedestal. but in the films with non-uniform doping the sequences of the output pulses are similar to the domains. the ze component of the variable electric field is dominating in the nonlinear monopulses. this component is uniform along the thickness of the film i.e. along ox axis. because the peak values of the electron concentration are high within the monopulses, the sequences of the strong monopulses can be used for the effective modulation of the electromagnetic radiation of higher part of thz range and of the optical range in the waveguides on the base of the nitride films. in the earlier works such a modulation was considered within the linear regime of amplification of scw [21-24]. 5. conclusions the sequences short strong monopulses of space charge waves of durations 3 – 10 picoseconds can be excited in the nitride n-gan и n-inn films of the thicknesses 2 m under the negative differential conductivity when the input signals are the modulated microwave pulses of small amplitudes. the repetition rate of the output monopulses is determined by the carrier frequency of the input microwave pulses. each monopulse is without the internal carrier frequency and occupies the wide frequency range of about 100 – 300 ghz. the strong monopulses are formed both in the uniform films and in films with the non-uniform conductivity. these monopulses differ from the domains of the strong electric fields in the bulk semiconductors. the monopulses are realized under the amplification in the essentially nonlinear regime. the bias electric fields should be chosen slightly higher than the thresholds of the negative differential conductivity. the doping levels should be moderate 1017 cm-3. the typical lengths of the films are 30 – 60 m, the widths are ≥ 100 m. the n-gan films are preferable for the excitation of the nonlinear monopulses, because the peak values of the monopulses are higher than ones in n-inn films. also the carrier microwave circular frequencies at the input can be higher namely in the n-gan films and are   21011 s-1, or f  /2  30 ghz. the sequences of strong monopulses can be used for the modulation of the optical radiation in the waveguides on the base of the nitride films. in the films of the non-uniform doping the sequences of nonlinear pulses are excited due to the electric field inhomogeneity near the input end of the film; the nonlinear pulses are similar to domains of the strong electric field there. acknowledgement. the authors are grateful to sep-conacyt, mexico, for a partial support of our work. 200 v. grimalsky, s. koshevaya, j. escobedo-alatorre, a. kotsarenko references [1] v. grimalsky, s. koshevaya, j. escobedo-a., and j. sanchez-s., "strong electric monopulses in nonuniformly doped nitride films under negative differential conductivity", in proceedings of the 2019 31st ieee international conference on microelectronics (miel), nis, serbia, 2019, pp. 8386. [2] y-s. lee, principles of terahertz science and technology, springer, 2009, p. 340. [3] m. perenzoni and d. j. paul, physics and applications of terahertz radiation, springer, 2014, p. 255. [4] h.-j. song, t. nagatsuma, handbook of terahertz technologies. devices and applications, boca raton, crc press, 2015, p. 585. [5] g. carpintero, l.e. garcıa muñoz, h.l. hartnagel, s. preu and a.v. räisänen, semiconductor terahertz technology. devices and systems at room temperature operation, john wiley & sons, 2015, p. 386. [6] y. nakasha, "special section on terahertz waves coming to the real world" ieice trans. electron., vol. e98.c, no. 12, december 2015. [7] s. j. pearton, j. c. zolper, r. j. shul and f. ren, "gan: processing, defects, and devices", j. appl. phys., vol. 86, no 1, pp. 1-79, july 1999. [8] s. jain, m. willander, j. narayan, and r. van overstraeten, "iii-nitrides: growth, characterization, and properties", j. appl. phys., vol. 87, no. 3, pp. 965-1006, february 2000. [9] v. gruzhinskis, p. shiktorov, e. starikov, and j. h. zhao, "comparative study of 200–300 ghz microwave power generation in gan teds by the monte carlo technique", semicond. sci. technol., vol. 16, no 8, pp. 798-805, august 2001. [10] j. t. lü and j. c. cao, "terahertz generation and chaotic dynamics in gan ndr diode", semicond. sci. technol., vol. 19, no 4, pp. 451-456, april 2004. [11] v. i. timofeyev, e. v. semenovskaya and o.m. falieieva, "electrothermal analysis of gan power submicron field-effect heterotransistors", radioelectron. commun. syst., vol. 59, no 2, pp. 66–73, february 2016. [12] a. a. kokolov and l. i. babak, "methodology of built and verification of non-linear eehemt model for gan hemt transistor", radioelectron. commun. syst., vol. 58, no 10, pp. 435–443, october 2015. [13] p. siddiqua, w. a. hadi, a. k. salhotra, m. s. shur and s. k. o’leary, "electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: response to the application of a constant and uniform electric field", j. appl. phys., vol. 117, no 12, article id 125705, june 2015. [14] w. a. hadi, p. k. guram, m. s. shur and s. k. o’leary, "steady-state and transient electron transport within wurtzite and zinc-blende indium nitride", j. appl. phys., vol. 113, no 11, article id 113709, june 2013. [15] e. jatirian foltides, v. grimalsky, s. koshevaya and j. escobedo-alatorre, "amplification of space charge waves in n-inn films of thz range", in proceedings of the ieee latin america microwave conference lamc-2016, puerto vallarta, mexico, 2016, pp. 1-3. [16] v. grimalsky, s. koshevaya, m. tecpoyotl-t. and f. diaz-a.,"influence of nonlocality on amplification of space charge waves in n-gan films", j. electromagn. analysis & applic. (jemaa), vol. 3, no 2, pp. 33-38, february 2011. [17] v. grimalsky, s. koshevaya, i. moroz, and a. garcia-b., "influence of nonlocality on amplification of space charge waves in n-gan films", in proceedings of the international symposium on physics and engineering of microwaves, millimeter and submillimeter waves, kharkov, ukraine, 2010, pp. 1-4. [18] v. grimalsky, s. koshevaya, j. sanchez-s. and y. rapoport, "excitation of short monopulses in nitride films under negative differential conductivity", in proceedings of the international ieee microwaves, radar, and remote sensing symposium, kyiv, ukraine, 2017, pp. 151-154. [19] s. v. koshevaya, v. v. grimalsky, j. escobedo-alatorre and m. tecpoyotl-torres, "excitation of short electric monopulse in nitride films with negative differential conductivity", radioelectron. commun. syst., vol. 62, no. 6, pp. 262–270, june 2019. [20] s. m. sze and kwok n. ng, physics of semiconductor devices, hobokem, wiley-interscience, 2007. p. 815 [21] g. e. chaika, v. n. malnev and m. i. panfilov, "interaction of light with space charge waves", in proceedings of the spie. vol. 2795, 1996, pp. 279-282. [22] d. g. sannikov and d. i. semetsov, "waveguide interaction of light with amplifying scw", physics of the solid state (fizika tverdogo tela), vol. 49, no. 3, pp. 488-492, march 2007. [23] s. yu, dadoenkova, i. o. zolotovsky, i. s. panyaev and d. g. sannikov, "modeling the generation of optical modes in a semiconductor waveguide with distributed feedback formed by a space charge wave", comput. opt., vol. 44, no 2, pp. 183-188, february 2020. generation of sequences of strong electric monopulses in nitride films 201 [24] v. grimalsky, s. koshevaya, m. tecpoyotl-t. and j. escobedo-a., "nonlinear interaction of terahertz and optical waves in nitride films", terahertz sci. technol., vol.6, no. 3, рp. 165-176, june 2013. [25] v. v. grimalsky, s. v. koshevaya, yu. g. rapoport, "superheterodyne amplification of electromagnetic waves of optical and terahertz bands in gallium nitride films", radioelectron. commun. syst., vol. 54, no. 8, pp. 401-410, august 2011. [26] k. tomizawa, numerical simulation of submicron semiconductor devices, boston: artech house publ., 1993, p. 356. [27] a. garcia-b., v. grimalsky, e. gutierrez-d. and s. koshevaya, "dispersion relation for two-valley quasi-hydrodynamic models in scws propagation in n-gaas thin films", in proceedings of the 25th internatioanl conference on microelectronics, belgrade, serbia, 2006, pp. 507-510. [28] m. levinshtein, s. rumyantsev and m. shur, properties of advanced semiconductor materials: gan, aln, inn, wiley, 2001, p. 216 [29] r. kircher and w. bergner, three-dimensional simulation of semiconductor devices, basel, birkhauser verlag, 1991, p. 124. [30] w. h. press, s. a. teukolsky, w. t. vetterling and b. p. flannery, numerical recipes in fortran, cambridge, cambridge univ. press, 1997, p. 1486. [31] a. a. samarskii, the theory of difference schemes, marcel dekker inc., 2001, p. 761. [32] g. i. marchuk, splitting and alternating direction methods. in handbook of numerical analysis, vol. i, finite difference methods, solution of equations in r" (part 1), amsterdam, elsevier, 1990, pp. 203462. arbeitsgliederung für 17.09 deut / bos facta universitatis series: electronics and energetics vol. 32, no 3, september 2019, pp. 369-385 https://doi.org/10.2298/fuee1903369a © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd the impact of the larger number of non-linear consumers on the quality of electricity * enver agić 1 , damir šljivac 2 , bakir agić³ ¹court expert electrical engineers, tuzla, bosnia and herzegovina 2 electrical faculty, the university j.j. strossmayer of osiijek, osijek, croatia ³faculty of elecrtical engineering, the university of tuzla, tuzla, bosnia and herzegovina abstract. theoretically this paper will explain the formation of higher harmonic components in the electricity network, their causes, consequences on consumers and the ways of their elimination. transformer role in the dyg connection will be explained on the concrete example. for a specific example the waveform of primary (r) phase at 10 kv voltage level, the current of the secondary (r) phase and the neutral conductor at the 0.4 kv voltage level will be determined as shown in the concrete example in the work. harmonic content will be determined up to 15 harmonics and the effective value of all these currents (phases r and r). thd for current of primary (r) phase and secondary (r) fase will be calculated. in this paper, the dimensional three-phase filter is set to eliminate the maximum harmonic component of current of the primary (r) phase on the 10 kv side of the transformer. the waveform, the corresponding harmonic content for the current and thd of primary (r) phase will be determined. additional measures have been proposed to reduce the thd. another parallel filter has been realized to eliminate the second by size harmonic components of primary (r) phase current. it will also compare thd for primary (r) phase as in the previous cases. for the total duration of the simulation, the used time is tstop = 0.1 sec. all of the above simulations will be realized in the matlab / psb program package and simulation models will be displayed. key words: electricity network, higher harmonics, load, transformer coupling 1. introduction the term quality of electricity was extensively used in the mid-1980s and it is important to pay attention to both suppliers and consumers. depending on the point of view, there are different definitions of the quality of electricity. the problem of the quality of electricity is related to the end customer [1], ie consumers of electrical energy. received february 21, 2019; received in revised form july 5, 2019 corresponding author: enver agić court expert electrical engineers, ui. a rbih 19/iv/15, tuzla, bosnia and herzegovina (e-mail: agabiem@bih.net.ba) * an earlier version of this paper was presented at the 4th virtual international conference on science, technology and management in energy, energetics 2018, october 25-26, niš, serbia [1] 370 e. agić, d.šljivac, b.agić the concept of quality is becoming increasingly apparent as electric consumers become very dependent on the quality of power, since they are increasingly based on electronic or microprocessor components that are very sensitive to power supply disruptions. also, the quality is additionally updated today with regard to the liberalization of the electricity market, when electric energy becomes a commodity as any other commodity, it must satisfy a certain quality that is defined by the consumers. consumers, as well as electricity producers, must meet the appropriate standards regarding the quality of electricity. normal switching operations with condensing batteries for repairing the power factor, switching on or deactivating low-load transformers or overhead lines, atmospheric discharges, etc. lead to transients that have a significant impact on the quality of electricity. the deteriorating quality of electricity is also affected by an increasing number of non-linear consumers [2] that generates electricity harmonics resulting in voltage deformations.these non-linear consumers are increasingly vulnerable to voltage deformations. in today's conditions of complex production processes accompanied by a large number of electronic and automatic regulation and control elements, any error in the functioning of a particular system component necessarily leads to very significant economic consequences.in the late fifties and during the sixties, rapid semiconductor components (thyristors and strong bipolar transistors) developed rapidly. semiconductor energy electronic transducers appeared and completely suppressed those with vacuum elements. most energy electronic converters are those that connect to the ac mains (rectifiers, network switched inverters, ac voltage regulators, cyclone converters). due to their interrupt nature, they represent nonlinear consumers for the network and cause the distortion of the waveform of the current and voltage [3]. it is shown by mathematical analysis of distorted waveforms, using fourier series, that these distorted forms can be represented by a series of sine functions of different frequencies. these frequencies are an integer of the basic (dominant) frequency of the analyzed signal and are called higher harmonics [4]. the interest in analyzing the quality of electricity lately has been steadily increasing because:  electrical and electronic equipment are becoming more susceptible to voltage disturbances;  electrical and electronic equipment are increasingly generating voltage disruptions;  the quality of electricity is of particular importance in the conditions of the deregulated market; and  by developing modern measuring devices, today the quality of electricity can easily be measured and memorized. the two main categories of problems in the analysis are: a) disorders: transits decay and increase voltage power supply interruptions b) stationary variations: voltage regulation harmonic distortion voltage flickers influence on the quality of electric energy of higher harmonics as consumer consumption 371 2. model of solving problems of higher harmonics the problem of the quality of electricity is dealt with by experts and scientists from many countries. by raising and expanding the application of electricity and the technology of the operation of the electric energy system, there is a need for standardization of certain solutions for the improvement of quality. the main goal in this period was to provide a reliable supply for consumers, which were linear in nature. therefore, for many years, the definition of quality was very simple quality is equal to reliability. however, with the introduction of electronics into banks, business institutions, industrial plants and households, or the emergence of microelectronic circuits and the information revolution in the second half of the twentieth century, the concept of quality has gained a wider meaning. a huge number of sensitive consumers are connected to the network, which require high power quality and voltage. on the other hand, there is a category of non-linear consumers (energy converters), which intensely deforms the waveform of the consumed current. the need for standardization, ie limiting the level of interference, becomes essential for consuming electrical energy. the initial standards recommendations related to voltage quality were adopted at the end of the 1960s (the 1967 recommendation and the standard for the limiting of harmonics in britain and the ussr), and during the seventies and early eighties, by twenty countries [6]. the problem of standardization of the quality of electric energy, ie limiting the influence of energy converters on the environment, and especially the phenomenon of "pollution" of the network with higher harmonics, is dealt by several international organizations. the most important are the international electrotechnical commission iec, as well as the european committee for electrotechnical standardization cenelec. in addition to these international organizations, which are in charge of issuing standards, a number of international organizations are considering this problem as their professional interest, the most influential being the institute of electrical and electronics engineers – ieee, and the international conference on large electric networks cigre in figure 1, the example where the three-phase part of electrical energy network is presented, in which non-linear load of a group of pcs is powered through a transformer connection. program package matlab/simulink/powe system blockset (psb) is used for modeling, simulation and analization of the dinamic energy system. fig. 1 the analyzed part of the network 372 e. agić, d.šljivac, b.agić in figure 2, the equivalent nonlinear load model for each phase is presented. fig. 2 an equivalent non-linear load model (pc) the model parameters are: network: voltage level: un = 10 kv (line voltage) phase angle of the first phase: = 0 network parameters: rs = 2.5 ohm; ls = 0.05 h transformer (linear model): nominal power: sn = 50 kva transformer transformer ratio: 10 / 0.4 kv working resistance and primary and secondary winding reactance: rp = rs = 0.0025 p.u .; xp = xs = 0.06 p.u. magnetization branch parameters: rm = 500 p.u. ; xm = 500 p.u. nonlinear load parameters (pc): r=0.5 ohm; l=0.004 h ropt=100 ohms; ball=150 uf internal diodes parameters: resistance ron (ohms): 0.01 inductance lon(h): 1*10^-6 forward voltage vf(v): 0.8 initial current ic(a): 0 snubber resistance rs(ohms): 10 snubber capacitance cs(f): 0.01*10^-6 the work: 1. theoretically briefly explains the cause of the formation of higher harmonic components in the electric power network, their consequences on consumers and the ways of their elimination. the role of the transformer in the dyg compound is explained and a concrete example is given. 2. for the part of the electrical network from figure 1, a waveform of primary(r) phase at 10 kv voltage level and the current of the neutral conductor phase at 0.4 kv voltage level will be determined, as shown in figure 1. the harmonic content will be determined up to 15. accordion, as well as the effective value of all these currents. (phases r and r). also, thd for current of primary(r) and secondary(r) phases will be calculated. influence on the quality of electric energy of higher harmonics as consumer consumption 373 3. the three-phase filter will be set to eliminate the maximum harmonic component of the current of primary(r) phase at the 10 kv side of the transformer. the waveform, the corresponding harmonic content of primary(r) phase current and thd will be determined. 4. additional measures will be proposed to reduce the thd of primary phase current. another parallel filter will be realized for elimination of the second one by size harmonic component of the primary(r) phase current. the comparison of thd will be made in cases under 3 and 4 . 5. for the total duration of the simulation, the used time is tstop = 0.1 sec. 6. the mentioned simulations will be realized with the matlab / psb type program package. the corresponding simulation models are displayed. 3. the causes of the formation of higher harmonics more harmonics in the network are caused and generated by non-linear consumers in the electric power network, which injects more harmonic components of the current into the system. this component through the impedance of the system results in distortion of the supply voltage, that affects the reduced reliability and shortening of the life of electrical equipment [6]. praxis is interesting to the higher ranks of the order from 0 to 100. higher harmonics causes are:  transformers, due to non-linear φ and characteristics of the iron core,  semiconductor electronic converters that due to their switching nature represent non-linear consumers for the network and cause distortion of the waveform of the current and voltage,  electric furnaces,  discharge lamps,  saturated electrical machines. the power system components and consumers are designed for sinusoidal forms of voltage and current, and any appearance of higher harmonics brings negative effects. some of the side effects are:  the occurrence of serial and parallel resonance in the network resulting in increased voltage and current,  impact on condenser batteries which causes an increase in losses,  the influence on the protection elements, which leads to unwanted activity of the protective devices (protection) or fuse overheating,  impact on the accuracy of standard measuring instruments,  additional losses in electrical machines (eg overheating, heating of cables, and the like),  interference with tt signals (higher har monics from power lines are transmitted by electromagnetic interference to tt cables, thus creating noise and disturbances in telecommunications,  influence on transformers. 374 e. agić, d.šljivac, b.agić 3.1. reduction of negative impacts in order to minimize the negative effects of higher harmonics, the following measures are necessary: reduce the intensity of harmonic currents  by installing chokes in series with non-linear consumers,  transformers in the yd or dd connection, since the compound in d retains odd harmonics dividible with three,  dimensioning of neutral conductors 2: 1 in relation to phase or installation of two with old dimensions,  installation of 12 pulse converters. installation of filters  passive filters that are split into: a) ordinary  first row  second row  third row b) active filters  active filters have the ability to generate and manage non-linear currents resonant frequency change system resonance can occur when there are condensing batteries for compensation of reactive energy in the system or with consumers. since the resonant frequency of the system, including capacitor batteries, is often close to the frequency of characteristic harmonics of non-linear consumers, there are undesirable effects. the change in the resonance frequency of the system is realized:  by changing the size of the capacitor,  by adding a serial choke,  moving the capacitor to another location,  or disconnecting the capacitor. 3.2. the role of the transformer in the dyg compound when we look at the magnetization component i(t) in figure 1 we see that it is not a sinusoid but a recited periodic function with nulls having maximal values at the same moments as the induction function b (t). fourier's analysis of one such function gives data for the amplitude of higher harmonics: first harmonic 100% third harmonic 24,5% the fift harmonic 3,43% influence on the quality of electric energy of higher harmonics as consumer consumption 375 fig. 3 hysteresis transformer curve figure 3 shows the first, third and fifth harmonics. there is an important influence of the third harmonic (which is a negative sinusoid). in the first third of the semiperduct, negative values i3 decrease the positive values i1. in the second third of the semiperduct, the positive values i3 are summed up with positive values i1, and in this way a sharpening form occurs i(t). with zero lead, each single-phase transformer along the basic accordion i1 pulls all higher harmonics. the magnetization current of the first harmonic is: 1a 1am i i sin( t)   1b 1bmi i sin( t 120 )    1c 1cmi i sin( t 240 )    where m is the mark for the maximum value of the current. without zero lead, the magnetization current is sinusoidal, because there is no 0conductor, so the third harmonics of the current can not be closed. flux will have the first and third harmonics 3, so it will be non-sinusoidal. because the air has a high magnetic resistance, between the upper and lower yoke, the amplitude of the third harmonic of the flux will be considerably lower. in the case when the transformer is connected to the dyg compound, the third harmonic component and all others that are its multiplicity are closed in the triangle, but as a result, we have additional heating of the winding. 376 e. agić, d.šljivac, b.agić fig. 4 first, third and fifth harmonics 4. use of matlab / psb in the solution of problems a simulation was performed for the part of the electrical network from figure 1 with the help of the matlab/psb computer program [7]. the observation time was tstop = 0.1s and the harmonic currents were counted up to the fifth period [8]. in figure 6, the wave form of primary(r) phase current is shown on the 10 kv side and here it is clearly seen that due to the influence of higher harmonics, the current does not have a sinusoidal shape. the rectifiers are the most commonly used single-energy electronic converters and one of the main sources of higher harmonics [9]. the switching mode has the effect of continuously changing the configuration of the active diode of the rectifier, resulting in the waveform of the rectifier current composed of segments and being insufficiently shaped. the flow of the non-sinusoidal current causes a decrease on impedance of the network, which leads to the distortion of the basic sinusoid voltage, while on the consumer side, the waveform of the voltage consist of parts of the sinusoid, that in addition to the direct component, also have alternating components-higher (steam) harmonics [10]. most personal computers use mono-phase rectifiers in the power supply section and have the role of generating stable single-voltage with simple design and reliability. for these reasons, most commonly used one are diode rectifiers with a filter capacitor on a one-way side or, more recently, one-way switching power supplies, which also have a capacitor at the output. in case of need for another voltage level or more stable voltage, a linear or switching power supply is connected behind the capacitor. however, in both cases, this rectifier distorts the network current, and partly the voltage. due to the charging of capacitor in periods when the network voltage is higher than direct-way, there is a distortion of the current, that is, the voltage at the condenser. the paper analyzes the distortion of the wave shape of the current, as a quality factor, when supplying consumers that generate more harmonic components of the current. influence on the quality of electric energy of higher harmonics as consumer consumption 377 it is possible to filter the source harmonics by using filters and analyze all relevant design parameters [11]. in our case, we have a low voltage installation that is connected via the transformer 10 /0.4 kv to the conventional electricity distribution network 3x10 kv. the load we have is a non-linear set of pcs and is balanced at each stage. the non-linear load for each phase generates more harmonics, whose composition is approximately defined as in = i1/n where i1 is the current of the basic and in-n harmonic. the wave forms of the primary and secondary phase are given in the figures as follows: fig. 5 voltage waveform of primary(r) phase on the 10 kv side fig. 6 the wave form of the irt phase on the 10 kv side 378 e. agić, d.šljivac, b.agić fig. 7 wave phase current irz at 0.4 kv side fig. 8 wave waveform of phase urz at 0.4 kv voltage level fig. 9 the current shape of the in-neutral conductor at 0.4 kv voltage influence on the quality of electric energy of higher harmonics as consumer consumption 379 fig. 10 harmonic current content irt on 10 kv side without filter / not installed fig. 11 harmonic current content irz at 0.4 kv without filter /not installed in the power spectrum irt the odd harmonics are dominant, there are no even harmonics. measurements of the current of the computer have shown that the shape of the current is very distorted due to non-linear consumer, which generates more odd harmonics (electronic equipment) [12]. thdi is calculated according to the formula below: 210 % 2 12 thdi 100%n n i i   380 e. agić, d.šljivac, b.agić for primary (r) phase current (on the 10 kv side) thdi = 268%. for the current of secondary (r) phase (at 0.4 kv side) is thdi= 279%. 5. results and solutions to the problem higher harmonics are constantly present in the network in a higher or lower percentage. but at some point they can become a problem. this happens if the source of the accordion is too large, if the current harmonics path is too long, that is, if the circuit is large, or if the response of the system is such that it leads to reinforcement of harmonics (resonance). in order to reduce or eliminate the harmony problem, there are several basic solutions: 1. reducing the intensity of harmonic currents, 2. setting the filters, 3. change in the resonant frequency of the system the methods of reducing the intensity of harmonic currents usually involve changing the mode of operation of the propulsion, which generate harmonics. such an approach is difficult to implement in practice, as this can affect the entire production process, and it is only possible at the design stage. however, something can be done by matching the transformer. the coil in the triangle leads to the blocking of the further flow of all the harmonics, which are multiplies of 3. with the introduction of a phase shift of 30 degrees, by twisting the secondary transformers into a star and a triangle, the effect of a 12-pulse rectifier is obtained, that is, the 5 th and 7 th harmonics[14] are eliminated. connecting a non-linear consumer to highpower outputs also reduces the effects of harmonics. the goal of setting the filters is to provide a low impedance for the harmonics of the current and thus prevent their spread into the network. therefore, the filters are most often placed in parallel to the condenser and consist of a condenser with an additional impeller. the resonant frequency of the filter is calculated always to be slightly below the frequency of the lowest dominant harmonic. this ensures that the filter works properly in case of oscillations of the capacitor parameters due to temperature,etc., and also to avoid the anti-resonant frequency approaching the frequency of the harmonics. the use of serial filters is more rarely applied, and their goal is to represent a high impedance for current harmonics, thus blocking their expansion into the network. more details about the types and methods of filter design can be found in j. arrillaga, d. bradley, p. bodger: "power system harmonics", john wiley & sons, chichester, 1985. these types of filters are called passive, as opposed to the newer ones active. active filters are in fact energy electronic converters, which are programmed to compensate higher harmonics. with such a filter, the "pure" sinusoidal current of the grid is provided. the more complex configurations enable the complete discovery of all disorders that affect the quality of electricity [15]. changing the resonant frequency of the system is necessary when there are condensing batteries for compensation of reactive energy in the system or with consumers. their resonant frequency is often close to the frequency of characteristic harmonics, and there are undesirable negative occurrences. changing the size of the capacitor, adding a serial influence on the quality of electric energy of higher harmonics as consumer consumption 381 impedance, moving the capacitor to another bus (location), or simply completely disposing the capacitor (with a pay-off cost without compensation) are the measures that can be resolved. for example, in the literature j.toth iii, d.velazquez: "benefits of an automated on-line harmonic measurement system", ieee transaction on industry application ,. one such experience is described [16]. resolving the problem of resonance in the network, which led to the fugging of condenser battery fuses, inaccurate instrumentation, frequent engine failure and communication problems, was found in moving the resonant frequency beyond the range of characteristic harmonics (5 th and 7 th ) by reducing the number of capacitors in batteries. as a specific way of dealing with harmonics, it is an administrative, or economic approach, where special contracts and tariffs discourage the excessive generation of harmonics. for example, in france, a special contract called "emeraude" was developed, which is a set of technical regulations and obligations for electricity distribution, as well as for consumers, in order to ensure the proper quality. after a year of application, the results released by the edf show that at mid-voltage, 99% of consumers have complied with the contract, but that compensation is paid $ 150,000, mostly due to short interruptions. in 1995, a new text of the contract came out, which allowed a considerably smaller number of interruptions, and in 1998 its audit was carried out, which included problems related to voltage failures. more recent research goes not only to determine the state, and to provide a prediction, but also to answer the question of what the cost of degradation of quality (harmonic losses) is, ie what and how to collect additional charges from consumers for the operation of non-linear drives[17]. there is a particularly interesting question of tariffing higher harmonics and how this can be done. the results of the survey show that 46% of the distributions intend to additionally charge the generation of harmonics and flickers, 40% to charge harmonics over apparent power (kva), and other time of use, that is, the time of "pollution". in addition to this, the question of measuring higher harmonics and the way of expressing their influence is not cleared up. this section shows the possibility of filtering source higher harmonics using filters as well as analyzing all relevant design parameters. in our case, we have a low voltage installation that is connected via the 10/0.4 kv transformer to the 3x10 kv classical electricity distribution network. the load we have is a non-linear set of personal computers (pcs) that is balanced at each stage. non-linear load for each phase generates more harmonics, the composition of which is approximately defined as in = i1/n where i1 is the current of the basic and in n harmonic. the dimensioned three-phase filter is set to eliminate the maximum harmonic component of primary(r) phase current on the 10 kv side of the transformer [18]. also, in this part of the paper, the waveform and corresponding harmonic content of phase r are shown. in this case, thdi is calculated (for phase r current) (10 kv side). simulation was performed with the help of the matlab / psb computer program. the observation time was tstop = 0.1s. 382 e. agić, d.šljivac, b.agić fig. 12 primary (r) phase current waveform on a 10 kv side (built-in filter) fig. 13 frequency spectrum of primary (r) phase current on 10 kv side (with built-in filter) the value of thdi for primary (r) phase current is: 210 % 2 12 thdi 100%n n i i    thdi = 0.239 % the pictures show the oscillation of the primary (r) phase wave and the spectral composition of the same current. it turned out that this filter has done a good job of eliminating the third and all other odd harmonics, so that the total thdi of the primary (r) phase current is about .239 %, which is quite satisfactory, given the regulations in this field. influence on the quality of electric energy of higher harmonics as consumer consumption 383 6. conclusion the components of the energy system, as well as consumers that connect to it, include sine waveforms and currents. any appearance of higher harmonics brings negative effects, the most important are: 1. the appearance of resonance in the network, 2. influence on condensing batteries, 3. influence on elements for protection, 4. impact on the accuracy of standard measuring instruments, 5. additional losses in electrical machines, 6. interference with telecommunication signals. business buildings with a large number of administrative and other service workers who can not imagine their work without computers, laser and/or matrix printers, scanners, photocopiers, small telephone exchanges, fluorescent, halogen or energy-saving lamps and other similar small sources of higher harmonics, represent a recognizable consumer group, which must be given special attention. within these buildings there are often concentrated large groups of small pcs (either as computers in individual departments, or as special computer centers). this group includes faculties and university campuses, which have their own computer centers, as well as a large number of computers in laboratories and cabinets. in order to further reduce the thdi of the current of primary (r) phase, another parallel three-phase filter is set up to eliminate the maximum harmonic component of the current on the 10 kv side of the transformer. also, in this part of the paper, the waveform and the corresponding harmonic content (of the primary phase current) are shown [19]. in this case, the thdi (10 kv side) is calculated. with the help of the matlab/psb computer program, a simulation was performed. the observation time was tstop = 0.1s.. with this filter we completely reduce the second and third harmonic components [20]. the second filter is installed in parallel with the first one that we installed earlier. the capacity of the second filter is 2.25 times smaller than the first because of the frequency of the second amount, 150 hz. the parameters of both filters are: first: r=0.1 ohm, l=0.156 h, c=20e-06 f second: r=0.1 ohm, l=0.156 h, c=8,94e-06 f fig. 14 the wave of primary phase (r) on the 10 kv side (two filters) 384 e. agić, d.šljivac, b.agić fig. 15 spectral current of primary phase (r) current on 10 kv side (2 filters installed) the value of thdi for primary phase (r) current is: 210 % 2 2 1 thdi 100%n n i i   thdi = 0.0023 % comparison of thdi in either case: from the analysis we can see that thdi is the smallest when both filters are turned on for the elimination of the 2 and 3 current harmonics, but then the current of the primary (r) phase has the highest value, i.e. 36a the thdi current of the primary (r) phase is distinguished on the 10 kv voltage because it is higher thdi in the case of installing one in relation to the two filters (in parallel). in the following period, the authors will perform practical measurements of the above dimensions and compare the simulation in matlab and concrete measured values in the particular given power grid.metrel mi 2192 (power quality analyzer), a portable multifunctional instrument for measuring and analyzing parameters of three-phase systems, will be used for measurement purposes. the instrument has been produced in accordance with the following european standards:  safety (en 61010-1)  electromagnetic compatibility (en 50081-1 and en 61000-6-1)  measurements in accordance with european stand-by (en 50160) this device is enabled in the specific case:  real-time monitoring, recording and parameter analysis in a three-phase system.  large selection of measuring functions: voltage, current, power (w, var and va), power factor, energy, oscilloscope, harmonics analysis, statistical analysis, anomalies.  in shooting mode, the measured sizes will be stored in memory for later an-alignment  special shooting mode for wavelength recording, with various trigger options. influence on the quality of electric energy of higher harmonics as consumer consumption 385  special recording modes for monitoring the quality of the observed system: periodic, waveform, transient, fast-logging, en 50160  calculation of the minimum, mean and maximum values of the measured sizes, with various predefined report forms  oscilloscopic display of waveforms, in real time and when analyzing recorded data  analysis of harmonic distortion to 63 harmonics during operation and later on recorded data  monitoring and analysis of energy opportunities  rs232 connector for connecting to a computer  windows software for analyzing recorded data and instrument management references [1] e. agić, d. šljivac, b. agić, “the influence of nonlinear background on the quality of electricity”, in proceedings of the 4th virtual international conference on science, technology and management in energy, “energetics”, pp. 171-178, 2018. [2] a. tokić chapters 1-3: introduction, definitions, transition cefes-3: "quality of el. energy”, pp. 3. [3] a. tokić chapters 1-3: introduction, definitions, transition cefes-3: "quality of el. energy”, pp. 4. [4] r. dugan, m. mcgranaghan, w. beaty: “electric power system quality”, mcgraw hill, new york, 1996, pp. 34-36. [5] v.katic – chapters 4-6: standards, harmonics, fail voltage cefes "quality of electrical energy", pp. 66. [6] r. dugan, m. mcgranaghan, w. beaty: “electric power system quality”, mcgraw hill, new york, 1996. [7] v. katić chapters 4-6: standards, accordions, voltage disruptions cefesnovember 2005, pp. 8. [8] a. tokić ''electricity quality“ cefes november 2005, pp. 23. [9] matlab simulink power system blockset 7 software package for simulation and analysis of ee dynamic systems within the matlab tool. [10] e. agić power quality–cefes, 2006 [11] wg on modelling and analysis of system transients using digital programs. “modelling and analysis guidelines for slow transients – part iii: ''the study of ferroresonance”, ieee trans. on power delivery, vol. 15, no. 1, pp. 255-265, jan. 2000. [12] k. miličević, ferroresonance: “systems, analysis and modeling”, wiley encyclopedia of electrical and electronics engineering, pp. 1-8,2014. [13] a. vinkovic and r. mihalic, “a currentbased model of the static synchronous series compensator (sssc) for newton– raphson power flow,” electr. power syst. res., vol. 78, no. 10, pp. 1806–1813, okt 2008. [14] “simpowersystems”, user’s guide, mathworks, 2013. [15] v. katić – chapter 4-6-: standards, harmonics, voltage disruptions cefes "electricity quality“ pp. 44. [16] d. graovac, v. katić, a. rufer: “power quality compensation using universal power quality conditioning system”, ieee power engineering review, usa, vol.20, no.12, pp.58-60, dec.2000, [17] g. carpinelli at all, “probabilistic evaluation of the economical damage due to harmonic losses in industrial energy system”, ieee transaction on power delivery, vol.11, no.2, pp.1021-1030, apr.1996. [18] w. piasecki, m. florkowski, m. fulczyk, p. mahonen, w. nowak, “mitigating ferroresonance in voltage transformers in ungrounded mv networks”, ieee trans. on power delivery, vol. 22, no. 4, pp. 23622369, 2007. [19] wg c-5, “mathematical models for current, voltage, and coupling capacitor voltage transformers”, ieee trans. on power delivery, vol. 15, no. 1, pp. 62-72, jan. 2000. [20] n. janssens, th. van craenenbroeck, d. van dommelen f., van de meulebroeke,“direct calculation of the stability domains of three-phase ferroresonance in isolated neutral networks with groundedneutral voltage transformers”, ieee trans. on power delivery, vol. 11, no. 3, pp. 1546-1553, jul. 1996. facta universitatis series: electronics and energetics vol. 31, no 4, december 2018, pp. 501-518 https://doi.org/10.2298/fuee1804501j methods of decreasing losses in optical metamaterials  zoran jakšić 1 , marko obradov 1 , olga jakšić 1 , goran isić 2,3 , slobodan vuković 1,3 , dana vasiljević radović 1 1 center of microelectronic technologies, institute of chemistry, technology and metallurgy, university of belgrade, njegoševa 12, 11000 belgrade, serbia 2 institute of physics, university of belgrade, pregrevica 118, 11080 belgrade, serbia 3 science program, texas a&m university at qatar, p.o. box 23874 doha, qatar abstract. in this work we review methods to decrease the optical absorption losses in metamaterials. the practical interest for metamaterials is huge, but the possible applications are severely limited by their high inherent optical absorption in the metal parts. we consider the possibilities to fabricate metamaterial with a decreased metal volume fraction, the application of alternative lower-loss plasmonic materials instead of the customary utilized noble metals, the use of all-dielectric, high refractive index contrast subwavelength nanocomposites. finally, we dedicate our attention to various methods to optimize the frequency dispersion in metamaterials by changing their geometry and composition in order to reach lower absorption, which includes the use of the hypercrystals. the final goal is to widen the range of different metamaterialbased devices and structures, including those belonging to transformation optics. maybe the most important among them is the fabrication of a novel generation of alloptical or hybrid optical/electronic integrated circuits that would operate at optical frequencies and at the same time would offer a packaging density and complexity of the contemporary integrated circuits, owing to the strong localization of electromagnetic fields enabled by plasmonics. key words: metamaterials, transformation optics, plasmonics, low-loss metamaterials, hyperbolic metamaterials 1. introduction artificial structuring of optical materials at the subwavelength level ensures excellent control over spectral and spatial dispersion. it becomes possible to obtain very high, very low (near-zero) and negative effective values of refractive index. a path is thus opened to tailoring received august 22, 2018 corresponding author: zoran jakšić, institute of chemistry, technology and metallurgy, university of belgrade, njegoševa 12, 11000 belgrade, serbia (e-mail: jaksa@nanosys.ihtm.bg.ac.rs)  502 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović the optical space at will, ultimately leading to the new field of transformation optics, fig. 1 [1-3]. the materials structured in the quoted manner possess electromagnetic properties that surpass those normally met in nature and are thus denoted as metamaterials [4, 5]. in a general case, metamaterials represent 1d, 2d or 3d composites of constituent parts with different values of complex refractive index, fig. 2, and are the main building blocks for tailoring the optical space. they are typically structured at a subwavelength level, which in the case of visible radiation is of the order of nanometers. in most cases the optical metamaterials owe their operation to electromagnetic localization on an interface between the two constituent materials (typically metal and dielectric). in such a situation an evanescent wave is formed at the interface, called surface plasmon polariton. in its basic form such a surface wave is obtained by coupling free electron plasma in the metal part with the p-polarized electromagnetic wave at the interface between semi-infinite dielectric and semi-infinite metal. depending on geometry of the nanocomposite and its constituent materials, a host of different waves can appear at the surface and in the bulk [6-8]. the strong localization of the electromagnetic field at the surface lies in the root of many exotic optical phenomena connected with plasmonic metamaterials. many novel wave phenomena are met in such metastructures, for instance extreme light concentration [9, 10], near-perfect absorption [11-13], superlensing [14-16] and hyperlensing [17-19], optical cloaking (invisibility shields) [3, 20, 21], to name just a few. basically, using metamaterials anything could be done with propagation of electromagnetic waves, the practical limit being only the imagination. one of the most interesting practical goals of metamaterials and transformation optics is merging the packaging density of electronic devices with the speed of photonic ones by creating ultracompact, all-optical circuits as a new step in the continuation of the moore's law [22]. this holds the potential to revolutionize the electronics industry. fig. 1 modification of the optical space by transformation optics. black lines represent the optical space (the artificially made structure of the metamaterial) while red arrows show the propagation of electromagnetic beams. possible approaches to decreasing losses in optical metamaterials 503 fig. 2 an example of 3d structuring of optical metamaterials (spheres with a given value of complex refractive index within a host with a different refractive index.) to obtain extreme concentrations, the typical approach is to utilize electromagnetic resonances in metal-dielectric nanocomposites, thus ensuring field localization at metaldielectric interface (the already mentioned surface plasmons polaritons, spp) [23]. the use of metals means high absorption losses, thus short propagation paths and generally poor figures of merit. this is a major obstacle to the more widespread application of transformation optics. a host of practical applications would benefit from low-loss plasmonics and nanophotonics. in this work we consider strategies for nanostructuring of artificial optical composites to decrease or eliminate absorption. some approaches include  low metal volume fraction: utilize structures with smaller relative amount of metal – generalization of the old concept of artificial dielectrics.  alternative plasmonic materials: use of plasmonic materials with lower losses compared to pure metals.  all-dielectric meta-optics: completely avoid the use of metals and limit the design to pure dielectric and possibly low-loss semiconductors.  optimizing frequency dispersion: design metal-dielectric or even metal-metal nanocomposites with a frequency dispersion specifically tailored to obtain lower losses. in the next sections we consider each of the quoted strategies. 504 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović 2. low metal volume fraction an obvious approach to decrease the absorption losses in metal-dielectric nanocomposites is to decrease their metal to dielectric volume fraction. basically, this idea leans heavily on the concept of artificial dielectrics, used already in 1950ties in microwave technique [24, 25]. here we have a simple rule of thumb, which also follows the common sense: as the metal volume fraction decreases, a smaller part of the wave propagates through the absorptive medium, thus losses become lower. on the other hand, field localization also tends to become weaker and the electromagnetic field spreads over a larger volume, see fig. 3. therefore, there is need for a trade-off between the two. fig. 3 electromagnetic field distribution (light color) around metal/plasmonic material (dark color). figure 4. shows some examples of low metal fraction metamaterials. the top left structure is a one-dimensional plasmonic crystal [26] (metal-dielectric multilayer) with metal sheets much thinner than their dielectric counterparts. the top right structure in fig. 4 is the simplest 1d plasmonic crystal, a freestanding metallic/plasmonic material membrane with nanometer thickness. the dielectric part of this plasmonic crystal is the surrounding ambient and it ensures a perfect electromagnetic symmetry of the structure – the dielectric above and below is identical. as mentioned in the description of fig. 4, the plasmonic nanomembrane [27, 28] is a typical example of 1d plasmonic structure with minuscule volume fraction of metal. it can be defined as a freestanding metallic (or generally material containing free electron plasma) structure with an extremely high aspect ratio (lateral dimensions being even several million times larger than the thickness which can be of the order of tens of nanometers, even less). the thinner nanomembranes are, the longer are the propagation paths of spp. this makes them an ideal platform for long-range surface plasmons polaritons [29, 30]. possible approaches to decreasing losses in optical metamaterials 505 fig. 4 examples of plasmonic crystal-based metamaterials with low volume fraction of metal constituent. top left: conventional metal-dielectric multilayer (1d plasmonic crystal – pc); top right: freestanding metal nanomembrane as the simplest 1d pc; bottom right: wire medium (metal wires within a dielectric host, 2d pc) and bottom left: metal/plasmonic particles within dielectric host (3d pc). propagation of spp on separate interfaces of a membrane is shown in fig. 5. when interfaces are close enough to each other (sufficiently thin membrane), separate spp modes couple across the plasmonic membrane. if membrane becomes thinner still, two spp modes merge into one. fig. 5 coupled spp on membranes in imi (insulator-metal-insulator) configuration. thin metal strata in dielectric host metal nanoparticles in dielectric host freestanding plasmonic nanomembrane wire medium 506 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović 3. alternative plasmonic materials plasmonic effects were usually obtained using good metals like gold and silver. at the same time, these materials have very strong absorption losses. in the recent years, however, the focus of attention has shifted to alternative plasmonic materials [31, 32] which also have free electron plasma, but they offer various advantages like tailorability of their electromagnetic response, lower absorption losses. probably the most interesting group of alternative plasmonic materials are optically transparent, electrically conductive oxides (tco) [33]. heavy doping ensures an increase of the electron concentration in these materials, thus contributing to an improvement of their plasmonic properties and at the same time ensuring tailoring of their spectral characteristics, i.e. shifting them to the near-infrared part of the spectrum. examples of tco include ito – indium-tin-oxide; azo – aluminum-zinc-oxide; gzo – gallium-zincoxide. recently, however, it has been noted that the quoted properties come for a price and that the tco figure of merit (the ratio of the real by imaginary part of the refractive index) reaches rather poor values, even worse than in noble metals they are intended to replace [7]. other alternative plasmonic media include metallic alloys. they are tunable by design, by simply adjusting the alloy composition. such tailoring could shift the peak losses to another frequency, possibly outside the operating range. this group of materials includes noble-transition alloys (e.g. au-cd), alkali-noble inter-metallic compounds (e.g. li2agin, kau) and intermetallics (e.g. ag3sn, cu3sn). in spite of the tailorability of the composition of metal alloys and thus of their frequency dispersion, a problem of their excessively high absorption at optical wavelengths still remains, only mitigated to a minuscule degree. graphene represents weakly corrugated sub-nanometer honeycomb lattice of carbon. its relatively low optical absorption in visible and infrared (of the order of 3%), connected with the existence of quasi-2d free electron plasma makes it a convenient candidate for plasmonics [34]. its properties are easily tailored by doping and gating. a combination of graphene with noble metal nanoparticles has been proposed as a platform for tunable spp [35]. graphene plasmonics represents a field of its own and vastly surpasses the scope of this article. finally, an alternative plasmonic platform are highly doped semiconductors, e.g. gaas, gap, sic, gan, which also have free electron plasma. their use in active and ultrafast plasmonics has been considered [36]. however, absorption losses in the visible are again a hurdle towards more widespread use. 4. all-dielectric meta-optics the idea with all-dielectric metamaterials is to avoid absorption by completely removing lossy parts [37-39] . the price to pay is a lower degree of design freedom (it is far easier to localize em field using metal-dielectric interfaces). no metals or similar materials with free electron plasma are used: material can be pure dielectric or possibly semiconductor (simultaneously ensuring high refractive index and low losses). it is necessary to reach high refractive index contrast between scatterers and the embedding host. mie resonance theory [40] is applied (exact solution of the classical electromagnetic diffraction problem): both scatterer size and morphology/shape are important. extreme possible approaches to decreasing losses in optical metamaterials 507 field concentration is obtained through creation of hotspots (nonlocalities) at deep subwavelength level due to edge effects at sharp angles. to achieve this the shapes of scatterers are modified. some 3d shapes of nanoparticles are presented in fig. 6; this is only a very small number of examples among a vast variety of the existing forms. deep subwavelength hotspots cause effective medium approximation (ema) to break down (conventional ema theory no longer remains valid). fig. 6 illustration of nanoparticles with different shapes. since resonances are shape-dependent, a wealth of new modes appears. morphologydependent em behavior includes both electric and magnetic dipole resonances and higher order multipole resonances. in addition to that, relative positions of nanoparticles are important because magnetic or electric field tend to concentrate between them (nanoparticle dimers), again causing the appearance of magnetic or electric hotspots. as an illustration, the scattering properties of a single all-dielectric cylinder on a substrate are shown in figs. 7–8. the nanocylinders are on a low index substrate (n=2) surrounded by air and are built of a high index material (n=8). the cylinder radius is 50 nm and its height is 40 nm. the scattering properties of all-dielectric nano-cones are shown in figs. 9–12. the cones are deposited on a low index substrate (n=1.5) are surrounded by air and consist of a high index material (n=4). the dielectric cone base radius is 75 nm and the height is 100 nm. fig. 7 radiation pattern of far field scattered from a dielectric cylinder h=40 nm, r=50 nm, n=8 on a substrate n=2. the incident beam =560 nm arrives from above, along the cylinder axis. 508 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović fig. 8 spatial distributions of field intensity; electric field (top row) and magnetic field (bottom row) for a dielectric cylinder h=40 nm, r=50 nm, n=8 on a substrate n=2 at =560 nm. fig. 9 radiation pattern of far field scattered from a dielectric cone h=100 nm, r=75 nm, n=4 on a substrate n=1.5. the incident beam =300 nm arrives from above, along the axis of the cone. possible approaches to decreasing losses in optical metamaterials 509 fig. 10 spatial distributions of field intensity; electric field (top row) and magnetic field (bottom row) for a dielectric cone h=100 nm, r=75 nm, n=4 on a substrate n=1.5. at =300 nm. fig. 11 radiation pattern of far field scattered from a dielectric cone h=100 nm, r=75 nm, n=4 on a substrate n=1.5. the incident beam =380 nm arrives from above, along the axis of the cone. 510 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović \ fig. 12 spatial distributions of field intensity; electric field (top row) and magnetic field (bottom row) for a dielectric cone h=100 nm, r=75 nm, n=4 on a substrate n=1.5. at =380 nm. when deposited on an interface between two materials with different refractive indices single dielectric particle exhibits high directivity in its radiation pattern in favor of material with higher refractive index i.e. the substrate, same as with metallic particles [41, 42]. unlike metals, electric field localizations occur also within the particle but are still tied to edges of the particle with much lower efficiency in comparison to metals. however, unlike metals, dielectric particles exhibit high magnetic field localizations within the particles with spatial distributions almost complementary to those of electric fields. figure 13 shows the response of purely dielectric nanodimers (paired nanocylinders, top view) [38]. for the field directions as in fig. 13 the dimers exhibit field hotspots in the gap between the nanoparticles: for the electric field directed along the axis of the dimer a hotspot of the electric field appears, and for the magnetic field along the same axis a magnetic hotspot appears. in the case when the nanoparticles are metallic, an identical situation is encountered if the layout is as shown in fig. 13a. however, metallic dimers behave oppositely to the dielectric ones when the configuration shown in fig.13b is used, and contrary to the all-dielectric case no magnetic hotspot appears at all. possible approaches to decreasing losses in optical metamaterials 511 fig. 13 electric and magnetic hotspots in purely dielectric dimers. + and – signs describe polarization of molecules within dimers. the vector of electric polarization within separate nanoparticles has the same direction as the electric field, while magnetic polarization follows the magnetic field. a square array of cylindrical high refractive index dielectric resonators is shown in fig. 14. such structure is denoted as dielectric huygens metasurface [43]. a metasurface can be defined as quasi-2d structure with a subwavelength thickness containing metamaterial “atoms” in its plane, which are themselves with subwavelength dimensions. a huygens metasurface can behave as a reflectionless plane, i.e. an array of huygens sources which do not have a backward component of scattering. the metamaterial “atoms” in this case are high-index cylinders arranged in plane. fig. 14 square array of subwavelength high refractive index cylinders embedded in a low-index host. 512 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović 5. optimizing frequency dispersion metal-dielectric nanocomposites exhibit very complex photonic behavior even in the case of the simplest structures. an interplay between bragg and plasmon-polariton interface phenomena generates a plethora of various electromagnetic modes. as an illustration, fig. 15 shows a frequency dispersion of a simple one-dimensional metal-dielectric multilayer with only 3 metal-dielectric pairs. the structure is deposited on dielectric and surrounded by air or vacuum. even such a basic plasmonic structure shows a surprising wealth of modes. besides a bandgap one can observe different plasmonic modes (to the right of the light line), including those modes that exist within the bandgap and cross into the bands, as well as the negative group velocity modes. obviously, if we meet such a complex situation for a simple 1d plasmonic crystal, with increasing structural complexity (making nanoplasmonic structures in 2d and 3d), it should be possible to customize frequency dispersion of the obtained artificial materials to arrive at almost any desired group velocity in a given frequency/wave vector range. the idea is to adjust the parameters to minimize losses and maximize fom for a given frequency range. fig. 15 frequency dispersion of a simple three-layer pair metal-dielectric with vacuum (n=1) on top side and dielectric substrate n=2.89. possible approaches to decreasing losses in optical metamaterials 513 now we give here an example of plasmonic metamaterials that can have strongly decreased losses. it is an old/new paradigm –materials with hyperbolic dispersion [44] (hm, hyperbolic metamaterials). the effect was first demonstrated in 1969, but only relatively recently attracted attention within the field of metamaterials. hm metallodielectric structures became a target of intensive research, among other reasons, because their absorption losses can be strongly reduced. hm is a metamaterial designed to exhibit extreme optical anisotropy, with opposite signs of dielectric permittivity in two orthogonal directions εn∙ετ < 0 (1) ετ = εx = εy, εn = εz (2) hyperbolic dispersion for extraordinary waves: kτ 2 /εn + kn 2 /ετ = k0 2 (3) k0 2 = ω 2 /c 2 , kτ 2 = kx 2 + ky 2 , kn = kz. (4) hm are much easier to fabricate than the well-known double-negative media (artificial composites that simultaneously have their effective permeability and permittivity below zero, i.e. negative refractive index metamaterials). a visual presentation of topological transformations in k-space which bring to hyperbolic dispersion is shown in fig. 16. fig. 16 topological transitions in k-space: isofrequency surfaces for extraordinary waves in hyperbolic metamaterials. various implementations of hyperbolic metamaterials are illustrated in fig.17. the simplest one is obviously a metal-dielectric multilayer whose isofrequency surfaces are hyperbolic. other examples include multilayer fishnet metamaterials and their complementary structures, pillars made from alternating metal and dielectric layers. finally, the most complex design presented in fig. 17 is a sculpted metal-dielectric film – the superlens design. 514 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović fig. 17 examples of hyperbolic metamaterials another type of structures that can be used to tailor optical absorption losses are the plasmonic hypercrystals. they can be defined as a periodic combination of hyperbolic medium with another medium (metal, dielectric, metamaterial...) [45]. a general design of a hypercrystal is shown in fig. 18. fig. 18 general design of a hypercrystal possible approaches to decreasing losses in optical metamaterials 515 dispersion of hyperbolic materials does not impose diffraction limit for tm waves (system unlimited by frequency!) bragg reflection in a hyperbolic photonic crystal (d~λ0) leads to the appearance of optical tamm surface states [7]. in hypercrystals the formation of pbgs (photonic bandgaps) persists in the subwavelength mode (metamaterial regime, d<<λ0) optical tamm states in hypercrystals lead to high em confinement (larger wave numbers) and simultaneously to lower absorption losses compared to surface plasmons polaritons. such behavior does not occur either in conventional pbg or in metamaterials. figures 19 and 20 show the frequency dispersion of the extinction coefficient im(kn)d (absorption) in a hypercrystal in dependence on the normalized in-plane momentum (k| |=k0) for varying τ=1/γ in lossy drude model (fig. 19). fig. 19 absorption in a hypercrystal for varying τ=1/γ in lossy drude model. 516 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović fig. 20 absorption in a hypercrystal for varying metal fraction in hyperbolic part. 6. conclusion reaching low-loss or lossless nanophotonics & plasmonics is a holy grail of electromagnetics, photonics and transformation optics. strategies include the use of alternative plasmonic materials, all-dielectric nanocomposites and optimization of dispersion and structure toward lower losses. each of them holds its own promises and pitfalls. a winning combination is not (yet) known, but may include a combination of two or more of the above. a host of practical applications would benefit: transformation optics (including superlenses and hyperlenses, cloaking devices, superconcentrators, superabsorbers...) elimination of losses is a crucial step toward merging electronics and photonics into super-compact, super-fast new generation of integrated circuitry. acknowledgement: the paper is a part of the research funded by the serbian ministry of education and science within the projects tr32008, iii45016 and on171005, as well as by the qatar national research fund within the projects nprp 8-028-1-001 and nprp 7-665-1-125. possible approaches to decreasing losses in optical metamaterials 517 references [1] u. leonhardt, “optical conformal mapping,” science, vol. 312, no. 5781, pp. 1777-1780, 2006. [2] y. liu, t. zentgraf, g. bartal, and x. zhang, “transformational plasmon optics,” nano lett., vol. 10, no. 6, pp. 1991-1997, 2010. [3] j. b. pendry, d. schurig, and d. r. smith, “controlling electromagnetic fields,” science, vol. 312, no. 5781, pp. 1780-1782, 2006. [4] w. cai, and v. shalaev, optical metamaterials: fundamentals and applications, springer, dordrecht , germany, 2009. [5] s. a. ramakrishna, and t. m. grzegorczyk, physics and applications of negative refractive index materials, spie press bellingham, wa & crc press, taylor & francis group, boca raton fl, 2009. [6] m. i. dyakonov, “new type of electromagnetic wave propagating at an interface,” sov. phys. jetp, vol. 67, pp. 714-716, 1988. [7] g. isić, s. vuković, z. jakšić, and m. belić, “tamm plasmon modes on semi-infinite metallodielectric superlattices,” scientific reports, vol. 7, no. 1, pp. 3746, 2017. [8] j. a. polo jr, and a. lakhtakia, “surface electromagnetic waves: a review,” laser and photonics reviews, vol. 5, no. 2, pp. 234-246, 2011. [9] j. yang, m. huang, c. yang, z. xiao, and j. peng, “metamaterial electromagnetic concentrators with arbitrary geometries,” opt. express, vol. 17, no. 22, pp. 19656-19661, 2009. [10] d. s. wiersma, p. bartolini, a. lagendijk, and r. righini, “localization of light in a disordered medium,” nature, vol. 390, no. 6661, pp. 671-673, 1997. [11] n. i. landy, s. sajuyigbe, j. j. mock, d. r. smith, and w. j. padilla, “perfect metamaterial absorber,” phys. rev. lett., vol. 100, no. 20, 2008. [12] n. liu, m. mesch, t. weiss, m. hentschel, and h. giessen, “infrared perfect absorber and its application as plasmonic sensor,” nano lett., vol. 10, no. 7, pp. 2342-2348, 2010. [13] j. ng, h. chen, and c. t. chan, “metamaterial frequency-selective superabsorber,” opt. lett., vol. 34, no. 5, pp. 644-646, 2009. [14] n. fang, h. lee, c. sun, and x. zhang, “sub-diffraction-limited optical imaging with a silver superlens,” science, vol. 308, no. 5721, pp. 534-537, 2005. [15] z. liu, s. durant, h. lee, y. pikus, n. fang, y. xiong, c. sun, and x. zhang, “far-field optical superlens,” nano lett., vol. 7, no. 2, pp. 403-408, 2007. [16] j. b. pendry, and d. r. smith, “the quest for the superlens,” sci. am., vol. 295, no. 1, pp. 60-67, 2006. [17] z. jacob, l. v. alekseyev, and e. narimanov, “optical hyperlens: far-field imaging beyond the diffraction limit,” opt. express, vol. 14, no. 18, pp. 8247-8256, 2006. [18] z. liu, h. lee, y. xiong, c. sun, and x. zhang, “far-field optical hyperlens magnifying sub-diffractionlimited objects,” science, vol. 315, no. 5819, pp. 1686, 2007. [19] e. e. narimanov, and v. m. shalaev, “optics: beyond diffraction,” nature, vol. 447, no. 7142, pp. 266267, 2007. [20] w. cai, u. k. chettiar, a. v. kildishev, and v. m. shalaev, “optical cloaking with metamaterials,” nature photonics, vol. 1, no. 4, pp. 224-227, 2007. [21] t. ergin, n. stenger, p. brenner, j. b. pendry, and m. wegener, “three-dimensional invisibility cloak at optical wavelengths,” science, vol. 328, no. 5976, pp. 337-339, 2010. [22] e. ozbay, “plasmonics: merging photonics and electronics at nanoscale dimensions,” science, vol. 311, no. 5758, pp. 189-193, 2006. [23] s. a. maier, plasmonics: fundamentals and applications, springer science+business media, new york, ny, 2007. [24] j. brown, “artificial dielectrics having refractive indices less than unity,” proc. ieee, vol. 100, no. 4, pp. 51-62, 1953. [25] j. brown, "artificial dielectrics," progress in dielectrics, j. b. birks, ed., pp. 193–225, hoboken, new jersey: wiley, 1960. [26] s. m. vuković, z. jakšić, and j. matovic, “plasmon modes on laminated nanomembrane-based waveguides,” j. nanophotonics, vol. 4, pp. 041770, 2010. [27] z. jakšić, and j. matovic, “functionalization of artificial freestanding composite nanomembranes,” materials, vol. 3, no. 1, pp. 165-200, 2010. [28] c. jiang, s. markutsya, y. pikus, and v. v. tsukruk, “freely suspended nanocomposite membranes as highly sensitive sensors,” nature mater., vol. 3, no. 10, pp. 721-728, 2004. [29] p. berini, “long-range surface plasmon polaritons,” adv. opt. photon., vol. 1, no. 3, pp. 484-588, 2009. 518 z. jakšić, m. obradov, o. jakšić, g. isić, s. vuković, d. vasiljević radović [30] p. berini, r. charbonneau, and n. lahoud, “long-range surface plasmons along membrane-supported metal stripes,” ieee j. sel. top. quant. electr., vol. 14, no. 6, pp. 1479-1495, 2008. [31] a. boltasseva, and h. a. atwater, “low-loss plasmonic metamaterials,” science, vol. 331, no. 6015, pp. 290-291, 2011. [32] p. r. west, s. ishii, g. v. naik, n. k. emani, v. shalaev, and a. boltasseva, “searching for better plasmonic materials,” laser & photon. rev, pp. 1-13, 2010. [33] s. franzen, c. rhodes, m. cerruti, r. w. gerber, m. losego, j. p. maria, and d. e. aspnes, “plasmonic phenomena in indium tin oxide and ito-au hybrid films,” opt. lett., vol. 34, no. 18, pp. 2867-2869, 2009. [34] z. fei, a. rodin, g. andreev, w. bao, a. mcleod, m. wagner, l. zhang, z. zhao, m. thiemens, and g. dominguez, “gate-tuning of graphene plasmons revealed by infrared nano-imaging,” nature, vol. 487, no. 7405, pp. 82, 2012. [35] a. grigorenko, m. polini, and k. novoselov, “graphene plasmonics,” nature photonics, vol. 6, no. 11, pp. 749, 2012. [36] j. m. luther, p. k. jain, t. ewers, and a. p. alivisatos, “localized surface plasmon resonances arising from free carriers in doped quantum dots,” nature mater., vol. 10, no. 5, pp. 361, 2011. [37] s. jahani, and z. jacob, “all-dielectric metamaterials,” nature nanotech., vol. 11, no. 1, pp. 23-36, 2016. [38] a. i. kuznetsov, a. e. miroshnichenko, m. l. brongersma, y. s. kivshar, and b. luk’yanchuk, “optically resonant dielectric nanostructures,” science, vol. 354, no. 6314, 2016. [39] p. spinelli, m. a. verschuuren, and a. polman, “broadband omnidirectional antireflection coating based on subwavelength surface mie resonators,” nature comm., vol. 3, 2012. [40] m. quinten, optical properties of nanoparticle systems: mie and beyond, wiley-vch, weinheim, germany, 2011. [41] m. schmid, r. klenk, m. c. lux-steiner, m. topič, and j. krč, “modeling plasmonic scattering combined with thin-film optics,” nanotechnology, vol. 22, no. 2, pp. 025204.1-10, 2010. [42] z. jakšić, m. obradov, s. vuković, and m. belić, “plasmonic enhancement of light trapping in photodetectors,” facta universitatis, series: electronics and energetics, vol. 27, no. 2, pp. 183-203, 2014. [43] a. epstein, and g. v. eleftheriades, “huygens’ metasurfaces via the equivalence principle: design and applications,” josa b, vol. 33, no. 2, pp. a31-a50, 2016. [44] a. poddubny, i. iorsh, p. belov, and y. kivshar, “hyperbolic metamaterials,” nature photonics, vol. 7, no. 12, pp. 948-957, 2013. [45] e. e. narimanov, “photonic hypercrystals,” physical review x, vol. 4, no. 4, 2014. national aeronautics and space administration facta universitatis series: electronics and energetics vol. 29, no 4, december 2016, pp. 543 611 doi: 10.2298/fuee1604543g microelectronics packaging technology roadmaps, assembly reliability, and prognostics  reza ghaffarian jet propulsion laboratory, california institute of technology pasadena, california, usa abstract. this paper reviews the industry roadmaps on commercial-off-the shelf (cots) microelectronics packaging technologies covering the current trends toward further reducing size and increasing functionality. due to the breadth of work being performed in this field, this paper presents only a number of key packaging technologies. the topics for each category were down-selected by reviewing reports of industry roadmaps including the international technology roadmap for semiconductor (itrs) and by surveying publications of the international electronics manufacturing initiative (inemi) and the roadmap of association connecting electronics industry (ipc). the paper also summarizes the findings of numerous articles and websites that allotted to the emerging and trends in microelectronics packaging technologies. a brief discussion was presented on packaging hierarchy from die to package and to system levels. key elements of reliability for packaging assemblies were presented followed by reliabilty definition from a probablistic failure perspective. an example was present for showing conventional reliability approach using monte carlo simulation results for a number of plastic ball grid array (pbga). the simulation results were compared to experimental thermal cycle test data. prognostic health monitoring (phm) methods, a growing field for microelectronics packaging technologies, were briefly discussed. the artificial neural network (ann), a data-driven phm, was discussed in details. finally, it presented interand extra-polations using ann simulation for thermal cycle test data of pbga and ceramic bga (cbga) assemblies. key words: microelectronics, itrs, inemi, ipc, bga, wlp, 3d, solder joint reliability, prognostic, neural network, phm received april 28, 2016 corresponding author: reza ghaffarian jet propulsion laboratory, california institute of technology, pasadena, california, usa (e-mail: reza.ghaffarian@jpl.nasa.gov) 544 r. ghaffarian 1. electronics packaging trends 1.1. introduction as with many advancements in the electronics industry, consumer electronics is driving the trends for electronic packaging technologies toward reducing size and increasing functionality. microelectronics meeting the technology needs for higher performance (faster), reduced power consumption and size (better), and commercial-off-the-shelf (cots) availability (cheaper). this paper emphasizes on three industry roadmaps for conventional microelectronics (see fig. 1-1). the three key industry roadmap associations have chapters on microelectronics packaging, each with different perspective covering technologies from the die to assembly levels. the topics for each category were congregated by reviewing the recent reports of the international technology roadmap for semiconductor (itrs) [1], the reports of the international electronics manufacturing initiative (inemi) [2], and those of association connecting electronics industry (ipc) [3] in conjunction with surveying numerous articles and websites covering the trends in microelectronics packaging technologies. fig. 1-1 summarizes the key perspectives of these three roadmap societies. fig. 1-1 itri, inemi, and ipc roadmap focus and development styles. fig. 1-2 illustrates the key technology coverages by a more recently introduced roadmap for organic and printed electronics applications. the roadmap is published by the organic printed electronics association (oe-a) [4]. even though the printed electronics started to become a key growth technology, its scope is beyond this paper due to the breadth of work being performed in the area of conventional microelectronics packaging. this paper presents a summary of key findings regarding the packaging technologies including sing-chip, multichip, 3d stack, embedded active, materials, and hierarchy for microelectronics packaging. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 545 fig. 1-2 oe-a roadmap showing key technology and application coverage [4]. 1.2. key roadmap organizations industry roadmap organizations have been created to address trends in numerous technologies including microelectronic, optics, and printed electronics. table 1-1compares key attributes and overlap areas of three industry roadmaps discussed in the following, i.e., itrs, inemi, and ipc. the itrs roadmap emphasis is on the front-end conventional microelectronics field, and it is sponsored by the world‘s five leading chip manufacturers. the objective of the itrs is to ensure cost-effective advancements in the performance of integrated circuits and the products that employ such devices; thereby supporting the health and success of this industry. table 1-1 team member make up and skills as well technology focus and development for itrs inemi, and ipc —the key roadmap development industries for microelectronics sectors [3]. 546 r. ghaffarian inemi, a consortium of approximately 100 leading electronics manufacturers, suppliers, associations, government agencies and universities, is another industry roadmap provider. inemi roadmaps cover the future technology requirements of the global electronics industry by identifying and prioritizing gaps in technology and infrastructure. with the support of participant companies, inemi generates timely, high-impact deployment projects to address or eliminate those gaps. the ipc electronic interconnection roadmap covers three basic elements: (1) the design and fabrication of semiconductors and their associated packaging; (2) the fabrication of the interconnecting substrate for both the semiconductor package and the product printed board; and (3) multiple levels of assembly and test. the ipc roadmap encounters challenges in covering increasingly fluid business relationships for the original equipment manufacturers (oems) and electronics manufacturing services (ems‘s). now, the oem markets may be anywhere on the planet rather than previously they were a predominantly simple model of a vertically integrated company. teams of experts from many organizations around the world have cooperated to ensure that the ipc roadmap presents the recommendations based on the vision and needs assessments of oem, odm, and ems companies. the oe-a, a working group within the german engineering federation (vdma) was organized more than a decade ago to create a communication and development interface for various fields of research. it represents the entire value chain of organic electronics, from the materials supplier and equipment and product manufacturer through to the user. the oe-a's goal is to issue roadmaps that serves as a guide to the multitude of technical developments and help to define possible applications. while many of the developments of oe-a members are still in the test phase in the lab, a whole series of practical applications is already in use. 1.2.1. itrs roadmap for five decades, the semiconductor industry has distinguished itself by the rapid pace of improvement in its products-based miniaturization level. this is usually expressed as moore‘s law, but is also sometime called scaling. the most significant trend is the decreasing cost-per-function, which has led to substantial improvements in economic productivity and overall quality of life through proliferation of computers, communication, and other industrial and consumer electronics. to help guide these r&d programs in scaling, the semiconductor industry association (sia) met with corresponding industry associations in europe, japan, korea, and taiwan to participate in a 1998 update of its roadmap and to begin work toward the first itrs, published in 1999. since then, the itrs has been updated in even years and fully revised in between years. the latest update of the roadmap is posted on the itrs website. fig. 1-3 shows the itrs roadmap for printed cmos moore‘s law and beyond, which more recently has been called ―more than moore‖ or its abbreviation, mtm. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 547 fig. 1-3 microelectronics packaging roadmap covering single chip, 2.5/3d stack, embedded active/passive, and printed electronics technologies. the itrs projects that by 2020–2025, many physical dimensions are expected to be crossing the 10 nm threshold. it is expected that as dimensions approach the 5–7 nm range it will be difficult to operate any transistor structure that is utilizing cmos physics as its basic principle of operation. it is also expected that new devices, like the very promising tunnel transistors, will allow a smooth transition from traditional cmos to this new class of devices to reach these new levels of miniaturization. however, it is becoming clear that fundamental geometrical limits will be reached in the above timeframe. by fully utilizing the vertical dimension, it will be possible to stack layers of transistors on top of each other. this 3d approach will continue to increase the number of components per square millimeter even when horizontal physical dimensions will no longer be amenable to any further reduction. itrs recognized the limitations of moore‘s law (i.e., linear scaling) and proposed a methodology to identify those mtm technologies for which a roadmapping effort is feasible and desirable. the semiconductor community needs to depart from the traditional scaling ―technology push‖ approach and involve new constituencies in its activities. itrs materialized this new approach in 2011, when it added a mems chapter to the roadmap, and also aligned it with the inemi roadmap. the micro-electro-mechanical systems (mems) chapter aligns its effort towards those mems technologies associated with ―mobile internet devices,‖ a driving application broad enough to incorporate many existing and emerging mems technologies. the limitation of moore‘s law, increased costs of lithograph steps and wafer processing, are also driving the industry to find alternatives to improve the performance and functionality of electronic devices, lower the cost. some experts predicts that significant technological advancement occurs through exponential system performance when the machines can do cognitive tasks more effectively than any human. either way, 548 r. ghaffarian the need to integrate disparate technologies (logic, memory, rf, sensors, etc.) in small form factors is driving the industry to 3d integration as a solution for the advancement. for example, due to lack of technology readiness and cost, 2.5d technology (passive interposer) was first developed to be a bridge technology to 3d ics, and has grown to be a package platform that is expected to co-exist alongside 3d ics. unlike in 3d-ics, 2.5d technology (a.k.a., tsv-less) only the interposer, and not the dies themselves, needs through silicon vias (tsvs) to connect active die with package substrates. this allows for the use of existing die designs. these technologies are discussed in details in subsequent chapters. 1.2.2. inemi roadmap inemi has been creating and exploiting technology roadmaps for the electronics industry for more than two decades. it projects trends for future opportunities and challenges for the electronics manufacturing industry. the roadmap is updated every two years, covering technology development and deployment by predicting future packaging, component and infrastructure challenges as well as describing critical technical and business elements required to support industry growth. the projects deliver solutions to identified gaps that allow the industry to continue on its fast paced speed. the inemi forms technology working groups (twgs) to address the technology gaps. the pace of change in packaging technology today has accelerated to the highest rate in history. communication, transportation, education, agriculture, entertainment, health care, environmental controls (heating and cooling), defense, and research all rely heavily upon electronics today. this diversity of application and the never ending demand for both lower cost and higher performance cannot be achieved without major changes in architecture, materials and manufacturing processes. today, these new technologies include sip, wafer level packaging (wlp), wafer thinning, and through silicon vias (tsvs). in the near future, we will see additional changes with the incorporation of nano­materials. multi-core processors are now the norm for most computing applications. a consequence of the expected demise of the traditional scaling of semiconductors is the increased need for improved cooling and operating junction temperature reduction due to large leakage currents. the consumer's demand for thin multifunctional products has led to increased pressure on alternative high density packaging technologies. high-density three-dimensional (3d) packaging of complete functional blocks has become the major challenge in the industry.  rf system-in-package (sip) applications have become the technology driver for small components, packaging, assembly processes, and high density substrates.  the use of motion-gesture sensors in various consumer and portable devices has expanded the mems  gyroscope enables portrait-landscape mode (both 2d-axis and 3d-axis) is expected to see an exponential growth.  performance requirements such as increased bandwidth and lower power are driving 3d integrated circuits (ics) designed with through silicon vias (tsv). the need for continuous introduction of complex, multifunctional new products to address the converging markets (first identified in 2004) has continued to favor the development of functional, modular components or sip (both 2d and 3d structures). this paradigm shift in the design approach increases the flexibility, shortens the product microelectronics packaging technology roadmaps, assembly reliability, and prognostics 549 design cycle, and places the test burden on the producers of the modules. major paradigm shifts identified in the recent inemi roadmap include:  cloud-connected digital devices with sensors  optical interconnection  revolutionary transition in packaging technology  supply-chain infrastructure development while minimizing risk  next generations of fiber technology to keep up with capacity  wafer level packaging has come of age in addition to the conventional packaging technology trend, inemi added printed electronic technology in its forecasting. for example, the 2013 inemi‘s ―large area, flexible electronics roadmap‖ chapter is building upon the 2011 first edition [2]. it added a comprehensive update based on a number of announcements made by industry since the previous publication. in addition, the inemi team identified paradigm shifts, enablers, and show stoppers. one key paradigm is the transition from the beginning of the 21 st century vision for completely printed electronic products to ‗hybrid‘ products, where traditional electronic components are used in combination with printed components. other paradigm shifts include cost per area of functionality versus cost per function for silicon chip and integration of electronics in non-traditional objects and locations – ubiquitous electronics. a few gaps and show stoppers are also identified and presented. for example, it states that the rate of commercialization of materials and manufacturing/ processing equipment is occurring too slowly to meet the cost/performance/utility demands to enable near-term product launches additionally, the rate of development of systems must accelerate—otherwise a window of opportunity may be lost for a disruptor to commercialize a new competitive product. seven areas of opportunity were identified by an industry survey performed by the inemi team. those surveyed further predicted that the near-term commercialization opportunities will continue to be lighting, power (battery), and sensors (biological, chemical, and touch) followed later by the introduction of radio frequency (rf) devices (anti-tampering and authentication), photovoltaics, and displays. as with silicon-based component/subsystem technologies, it is envisioned that the technology and applications will mature over time, offering additional opportunities for integration into product emulators. as an example, as these technologies become more robust, it is possible that memory products may be developed for the aerospace and defense industries. near-term opportunities are classified as either (1) non-hybrid—an application that is comprised of only the emerging technology or (2) hybrid—an application that is manufactured using traditional electronics and devices, circuits, or components based on the new technology, e.g., a product with a printed display module and a silicon ic rf front-end. for non-hybrid application, one technical barrier concerns the development of in-line manufacturing quality control equipment. to benefit from the economies of scale that rollto-roll (r2r) and printing offers, systems must be developed and qualified for testing of the fabricated devices, circuits, and components. conversely, hybrid flexible electronics systems comprised of printed electronicsbased components (sensors, power, indicators, signage) integrated with traditional electronics (surface mount technology for passive devices and silicon based ics) continue to receive greater attention for near-term commercialization opportunities. in order to achieve further commercialization, a dedicated, hybrid manufacturing platform must be developed. inemi 550 r. ghaffarian envisions that an r2r manufacturing platform combining several printing technologies (e.g., flexography, gravure, and micro dispensing) is required to enable realization of the market potential. 1.2.3. ipc roadmap the ipc has been creating and exploiting technology roadmaps for the electronics industry for more than two decades; the first roadmap was published in 1993 and updated in 1994. even though these documents did not follow the traditional roadmap format, but were more or less a compendium of needs of the industry looking ahead 4 years. the 1995 ipc roadmap was designed using classic timeline models with eight emulator oem products. the 2000–2001 roadmap included 11 emulator products. the emulators were reconfigured to include information on four different topics: design issues, board fabrication issues, assembly issues, and purchasing trends. for the first time components and component substrate technology was incorporated. the 2013 roadmap becomes a departure by selecting emulators from the end-use application matrix, even though it attempted to match the definition by the oem in the inemi roadmap. the ipc roadmap is a resource for companies throughout the global electronics manufacturing industry who are embarking on business, technology, and strategic planning for the near and long term. the recent ipc roadmap concentrates on the ―operational‖ segment of the electronic interconnect market, ipc always recommends that users consider the input from other roadmaps where it may pertain to their specific situation. new features of the ipc roadmap include a ―stewardship‖ section that provides expanded content and scope, with an emphasis on true sustainability; explanation of new business models an expanded coverage of the printed electronics industry as it matures into a viable technology. in summary, the itrs is an emerging technology roadmap; it looks at a ―technology push‖ covering the progress of technology and question as what products can be developed. this roadmap lacks the broader product context provided by the product technology roadmap. the product-technology roadmap is driven by product/process needs. this is the most common type of roadmap. a product-technology roadmap can be linked to ―technology push‖ or ―market pull.‖ ipc and inemi are ―market pull‖ roadmaps, which define desired products and asks what technologies are needed to support them. 1.2.4. oe-a roadmap the oe-a, a working group within vdma, was organized a few years ago to create a communication and development interface for various fields of research. it represents the entire value chain of organic electronics, from the materials supplier and equipment and product manufacturer through to the user. the oe-a's goal is to issue roadmaps that serve as guides to the multitude of technical developments and help to define possible applications. while many of the developments of oe-a members are still in the test phase in the lab, a whole series of practical applications are already in use. the oe-a has published four roadmaps. an adapted summary version of the 4th map, which projects near-term to long-term growth and applications, is schematically shown in fig. 1-4. here, the technology related to lighting and display are bundle together rather shown separately. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 551 fig. 1-4 inemi 2013 roadmap identification of paradigm shifts and enablers [2]. the three key areas defined are: 1. electronics and components covering radio frequency identification, batteries, printed memory for games, and transparent conductors 2. integrated smart systems including physical and chemical sensors, sensor arrays, and integrated displays 3. organic photovoltaic (opv), organic light emitting diode (oled), and flexible displays, which encompass a large number of applications in consumer electronics, lighting, and flexible/smart cards the oe-a has published the sixth edition of its roadmaps in 2015 with discussing key trends and challenges as shown in the following.  oled displays have become a true mass market item in mobile displays and are starting to penetrate the tv market  major industry sectors, such as automotive, consumer electronics, white goods, pharmaceuticals, and health care and packaging, have embraced organic electronics and are bringing products to the market  flexible, lightweight, mobile electronic products are gaining a larger position in the market, enabled by organic electronics  mobility of organic semiconductors and efficiency of opv materials are continuing to increase rapidly, and becoming competitive with poly-si is starting to look achievable  patterning processes are being scaled to smaller dimensions and improved registration  integration of printed and silicon based components to make hybrid systems is becoming more and more a subject of interest and looks to be one of the primary paths to further commercialization in the coming few years  the industry is entering a phase of realistic growth, with significant revenues and with products appearing in more and more application areas 552 r. ghaffarian the 2015 oe-a roadmap team identified the following key challenges (a.k.a., red brick wall) for which major breakthroughs are needed.  processes: resolution, registration, uniformity and characterization.  encapsulation: flexible transparent barriers at low cost.  materials: improvement of electrical performance, processability and stability.  development of appropriate standards and regulations for organic electronics. 2. single-chip packages 2.1. introduction continuous significant changes are underway in the smart phones, mobile, computer, telecommunication, automotive, and consumer electronics industries. the common and pervasive requirements in all of these electronics are (1) ultra-low-cost, (2) thin, light, and portable, (3) very high performance, (4) diverse functions involving a variety of semiconductor chips and packaging, and (5) user friendliness. the packaging technologies are now considered to be the key enabler for system level microelectronics implementation. packaging is designed to accommodate the lagging miniaturization of printed circuit board (pcb) since such miniaturization add significant cost of the final product. for this reason, electronics functional chips are transformed by packaging scheme that enlarge the features for ease of assembly as well as protecting from environment. fig. 2-1 shows schematically the purpose of microelectronics package from bga to wafer level package (wlp) — molded and a more recent fan-out configurations. an interposer is used to accommodate the fine pitch of the chip as well as the next level interconnection, e.g. pcb. fig. 2-1 single-chip packaging concept from wire-bond to flip-chip ball grid array to wafer-level packaging (fan-in and fan-out). microelectronics packaging technology roadmaps, assembly reliability, and prognostics 553 in addition to ease-of-testing and assembly role, the packaging has the following features:  signal distribution, involving mainly topological and electromagnetic consideration  power distribution, involving electromagnetic, structural, and materials aspects  heat dissipation (cooling) , involving structural and materials consideration  protection (mechanical, chemical, electromagnetic) of components and interconnections furthermore, an electronic package must also function at its design performance level while still allowing for product that is high quality, reliable, serviceable, and economical. fig. 2-2 categorizes single-chip microelectronic packaging technologies into three key technologies: (1) plastic ball grid arrays (pbgas), (2) ceramic column grid arrays (cgas or ccgas), and (3) and smaller foot-print wafer-level packages. there are numerous variation of packages in each category that will be discussed in the following sections. fig. 2-2 single-chip packaging trends from ball grid array (bga) to wafer level packages (fan-in or fan-out). pbgas and chip scale packages (csps) are now widely used for many commercial electronic applications, including portable and telecommunication products. bgas with 0.8-1.27-mm pitches are implemented for high-reliability applications, generally demanding more stringent thermal and mechanical cycling requirements. the plastic bgas introduced in the late 1980s and implemented with great caution in the early 1990s, further evolved in the mid-1990s to the csp (also known as a fine-pitch bga) having a much finer features from 0.4-mm down to 0.3-mm pitches. to accommodate higher i/o single-chip die, the flip-chip bga (fcbga) was developed. the fcbga is similar to the pbga, except that internally a flip-chip die rather than a wirebonded die is used. because of these developments, it has become even more difficult to distinguish different area array packages by size and pitch; its internal die attachment configuration should also be considered. the ultimate size reduction can be achieved by protecting single die at the wafer level, hence introduction of wafer level package (wlp). wlps also addresses the key issues of using single bare die, and it improves ease of handling and functional testing. 554 r. ghaffarian for high-reliability applications, ceramic and hermetic packages of area array packages were implemented. the ceramic bga (cbga) package uses a higher melting ball (pb90sn10) with eutectic attachment to the die and board. contrary to the pbga version, the high-melt ball does not collapse during solder interconnection reflow, hence, a control standoff height for improved reliability. the column grid array (cga) or ceramic column grid array (ccga) is similar to a cbga except that it uses column interconnects instead of balls; hence it has higher flexibility for improved reliability. the lead-free cga uses copper instead of high-melting lead/tin column. the flip-chip bga (fcbga) is similar to the bga, except that internally a flip-chip die rather than a wire-bonded die is used. r. ghaffarian [5-12] has published extensive work on the subject of bga, pbga, csp, fpga, and cga assembly and reliability and provided challenges associated with the area-array packaging technology implementation for high-reliability applications. the work has covered process optimization, assembly reliability characterization, and the use of inspection tools (including x-ray and optical microscopy) for quality control and damage detection due to environmental exposures. the following sections summarize a number of these packaging technologies. 2.1.1. ball grid array (bga) ball grid arrays (see fig. 2-3), with 1.27-mm pitch (distance between adjacent ball centers) and finer pitch versions with 1and 0.8-mm pitches, are the only choice for packages with higher than 300 i/o counts, replacing leaded packages such as the quad flat pack (qfp). bgas provide improved electrical and thermal performance, more effective manufacturing, and ease-of-handling compared to conventional surface mount (smt) leaded parts. finer pitch area array packages (fpbga), also known as csps, are further miniaturized versions of bgas, or smaller configurations of leaded and leadless packages with features generally less than 0.8-mm pitches. fig. 2-3 typical plastic ball grid array with internal wire-bond and flip-chip die for low and high-i/o package configurations, respectively. 2.1.2. column grid array (cga) for high-reliability applications, surface mount leaded packages, such as ceramic quad flat packs (cqfps), are now being replaced with cgas with a 1.27-mm pitch (distance between adjacent ball centers) or less. replacement is especially appropriate for packages with greater than 300 i/o counts where cqfp pitches become smaller, making them extremely difficult to handle and assemble. in addition to size reduction, cgas also provide improved electrical and thermal performance; however, their solder columns are microelectronics packaging technology roadmaps, assembly reliability, and prognostics 555 prone to damage, and it is almost impossible to rework defective solder joints. rework, re-column, and reassembly may be required to address solder defects due to processing or column damage prior to assembly due to shipping and mishandling. cga packages are preferred to cbga (see fig. 2-4) since they show better thermal cycle solder-joint reliability than their cbga counterparts. superior reliability is achieved for larger packages and for greater than 300 i/os when resistance to thermal cycling is further reduced with increasing package size. all ceramic packages with more than about 1000 i/os come in the ccga style with 1.0-mm pitch or lower in order to limit growth of the package size. fig. 2-4 typical plastic ball grid array with internal wire-bond and flip-chip die for low and high-i/o package configurations, respectively. key recent trends in electronic packages for high-reliability applications are as follows:  ceramic quad flat pack (cqfp) to area array packages  cbga to ccga/cga (>500 i/os) and land grid array (lga)  wire-bond to flip-chip die within a package  hermetic to non-hermetic packages (>1000 i/os)  high-lead solder columns to columns with cu wrap  pb-sn to pb-free, including potential use of a cu column  land grid with conductive interconnects rather than pb-free solder 2.1.3. class ynon-hermetic flip-chip cga (fc-cga) s. agarwal [13] reported that significant activities were carried out in recent years to address the non-hermetic flip chip cga for use in high-reliability applications. the specification was updated to ensure that new requirements be added to cover all aspects of the packaging configuration including flip-chips, underfills, adhesives, and column attaches as well as introduction of the new test methods. 2.1.4. flip chip in package (fcip) flip-chip assembly is fast becoming the assembly method of choice over wire-bond to connect a chip to a substrate (or package). the flip chip in package technology has been widely used in high performance fcip applications for more than a decade. elements of its success can be attributed to the establishment of high yield assembly processes and formulation of advanced underfill materials systems for high-reliability. it is widely known that underfills help to mitigate the effects of large coefficient of thermal expansion (cte) 556 r. ghaffarian mismatches between silicon chips and organic substrates. to meet the demand for high i/o counts in high-performance and high-bandwidth applications, flip-chip i/o pitch needs to be reduced continuously. reduction of i/o bump dimension also raises significant challenges to package substrate technologies. compared to other types of substrates, a silicon package has the advantages of excellent planarity, fine-pitch wiring, and matched cte for si chips. the key elements of an si carrier include ultra-fine pitch interconnection capability, knowngood die testability, as well as reworkability. micro c4s can be fabricated through various methods, such as micro screen printing, molten solder ejection method (msem), or photolithographic electroplating. 2.1.5. chip scale package (csp) the trend in microelectronics has been toward ever increasing numbers of i/os on packages, which is, in turn, driving the packaging configuration of semiconductors. key advantages and disadvantages of csps compared to bare die are listed in table 2-2. chip scale packaging can combine the strengths of various packaging technologies, such as the size and performance advantage of bare die assembly and the reliability of encapsulated devices. the advantages offered by chip scale packages include smaller size (reduced footprint and thickness), lesser weight, a relatively easier assembly process, lower overall production costs, and improvement in electrical performance. csps are also tolerant of die size changes, since a reduced die size can still be accommodated by the interposer design without changing the csp‘s footprint. csps have already made a wide appearance in commercial industry as a result of these advantages, and now, even their three-dimensional (3d) packages are being widely implemented. unlike conventional bga technology at typically 0.8–1.27 mm pitch, csps utilize lower pitches (e.g., currently, 0.8 to 0.3 mm) and hence, will have smaller sizes and their own challenges. table 2-2 pros and cons of chip scale package (csp). pros cons near chip size moisture sensitivity widely used thermal management  limits package to low i/os testability for known good die (kgd) electrical performance ease of package handling routability  microvia needed for high i/os  pitch limited to use standard pwb robust assembly process  only for an area-array version reliability is poor in most cases accommodates die shrinking or expanding underfill required in most cases to improve reliability. standards array version  inspectability  reworkability of individual balls infrastructure rework/package as whole microelectronics packaging technology roadmaps, assembly reliability, and prognostics 557 2.1.6. flip chip on board [fcob]) flip-chip assembly is fast becoming the assembly method of choice over wire-bond to connect a chip. direct attachment of flip chips on board (fcobs) with fine-pitch solder bumps are being increasingly used to address performance, power, size, and i/o requirements. fcobs require underfills to ensure solder bump reliability. however, added processing costs associated with underfill dispensing and curing, add challenges especially for fine-pitch assemblies. reliability concerns due to underfill delamination make fcobs a less likely option for future generations of microelectronic packaging. furthermore, when low-k dielectric material (ultralow-k dielectric in the future) is used in the ic and when such ics are assembled on organic substrates, the stiff solder bumps could crack or delaminate the low-k dielectric material under thermal excursions. 2.1.7. wafer level packages (wlp) or wafer level chip scale package (wlcsp) microelectronic packaging continues the migration from wire-bond to flip-chip first level interconnect (fli) to meet aggressive requirements for improved electrical performance, reduced size and weight. for wafer bumping, solder electroplating is commonly employed, especially for fine pitch applications. wafer level chip scale packaging (wlcsp) typically utilizes solder sphere placement technology to manufacture the bumps. in wlcsp, pitch and solder ball size are usually much higher and the number of i/o much lower than for flip chip in package (fcip) applications. however, many companies plan to use wlps for higher pin count applications, including analog parts with larger die sizes. this will increase the number of wafers to be processed, as well as the unit volumes. the memory die is one example of a large die whose adoption significantly increases the number of wafers. one of the major drivers for the adoption of wlps in portable products is form factor, and mobile phones increasingly contain wlps, representing the largest single product application. demands for greater functionality in smaller spaces is driving the adoption of wlps in mobile phones faster than in any other segment of the market. fan-out wafer level package (fowlp), a newly introduced wlp, is projected to grow rapidly within the next few years. fan-out wlp are ―re-configured‖ by placing known good ics active face down on a foil and by over-molding them. these wafers are then flipped and processed in the wafer fab with redistribution layer (rdl), ball placing, and diced. unlike fan-in wlp which has been commercialized since the late 1990‘s, fowlp is not constrained by die size, and thus can offer an unlimited number of interconnects for maximum connection density. one can also achieve finer line/spacing, improved electrical and thermal performance and small package dimensions to meet the relentless form factor requirements and performance demands of the mobile market. j.h. lau [14] reviewed patents on csp style packages with focus on lead frame, organic substrate with solder ball, fan-in and fan-out wlp. it also provided key advantages of fowlps over pbgas and fan-in wlp. the key advantages of fowlp over pbga packages with solder-bumped flip chip are their lower cost, lower profile by eliminating the substrate and wafer bumping, lower process steps by eliminating the flip-chip reflow and flux cleaning and removing the underfill requirement. also, fowlp packages show better electrical and thermal performance and easier to implement for system-in-package (sip) and 3d ic packaging. the latter characteristics also are true when fowlp is compared to fan-in wlp. other advantages include better wafer yield and using known good die (kgd) as well as enabling higher pin counts and embedding integrated passives. 558 r. ghaffarian 2.1.8. land-grid-array (lga) packaging trend land-grid array (lga) packages have been increasingly used in portable electronics and wireless products because of their low profiles on the printed wiring/circuit boards (pwb/pcb) and their direct pb-free assembly process compatibility. since lga has a lower standoff height and different material properties compared with the conventional bga package; its reliability behavior become of concern. a major concern is the boardlevel solder-joint reliability of the lga packages under thermal loading. for highreliability applications, this approach may become a popular approach with a much wider commercial industry implementation of restriction of hazardous substances (rohs). lga in plastic package version with low i/o and sizes has been available for thinner consumer products because of lower cost and lower assembly standoff compared to ballgrid-array versions. in some cases, the lgas are optimized for improved radio-frequency (rf) performance for wireless applications. 2.1.9. conventional leadless packaging trends in a 2003 paper [15], the authors stated that within the last few years, the qfn package has taken industry by storm and that the industry had already shipped one billion parts. fig. 2-5 shows a number of early generation of leadless packaging configurations including the microleadframe® package (mlf®), which were introduced more than a decade ago. fig. 2-5 infusion of new technology into the qml system g12 class y effort at a glance. 2.10. advanced leadless packaging trends ipc, the association connecting electronics industries [3] recently released the ipc 7093 specification, ―guidelines for design and assembly process implementation for bottom termination components,‖ covering the rapidly growing leadless packaging categories. the btc is a generic term for packaging technologies which their external connections consist of metallized terminals that are an integral part of the package body microelectronics packaging technology roadmaps, assembly reliability, and prognostics 559 and intended for surface mounting. this class of components includes quad flat no-lead (qfn), dual-row/multi-row qfn (drqfn/mrqfn), dual flat no lead (dfn), and land grid array (lga). the standard describes the critical design, assembly, inspection, and reliability issues associated with btcs. recently, a. tseng, et al. presented information on an area array version of qfn, called advanced qfn (aqfn) package [16]. the aqfn is an improved version of conventional qfn with multiple row terminals accommodating higher number of i/os. the number of i/os become similar to that of csp/fbga packages with the advantage of lower cost for portable and telecommunication applications. the multiple-row qfns; however, are more difficult to assemble, there are more opportunities for solder-joint bridging especially when pitch is smaller, and there are higher potential for risk due to thermo-mechanical environmental exposures. the thermo-mechanical solder-joint reliability of aqfn was improved by modifying packaging processes including doublesided etching of copper lead frame to create isolated copper posts with higher standoff. 3. stack packaging technologies 3.1. introduction the demand for high-frequency operation, high-input/output (i/o) density, and low parasitic, as well as the need for package-level integration with small form factors and extreme miniaturization, have led to numerous 2.5d and 3d packaging technologies [see fig. 3-1]. the vertically integrated 3d packages combine conventional flip-chip and wire-bond interconnection, build-up, and laminate substrates, and bring about packagelevel integration of disparate die and device functions through die or package stacking. fig. 3-1 2.5/3d packaging technologies showing conventional to advanced configurations. from the existing 3d packaging technology options, wire-bonding is well developed for use in low-density connections of less than 200 i/os per chip. this technology has limitations in meeting the increasing frequency requirements and increasing demands for 560 r. ghaffarian higher interconnection due to limitation of peripheral wire-bonding. in order to overcome such wiring connectivity issues, multiple flip-chip die with passive redistribution interposed have been introduced by industry for high-end applications. ultimately the 3d chip stacking technology using through-silicon vias (tsvs) is being pursued by industry since it offers the possibility of solving serious interconnection problems while offering integrated functions for higher performance. 3.2. 3d conventional packaging trends for high-density packaging, the migration to conventional interconnection 3d, more than ―moore‖, has become mainstream. even though initially conventional 3d packaging included leaded stack configuration, the trend is more towards area array interconnections. the conventional 3d packaging (see fig 3-2) consists of stacking of packaged-devices, known as package-on-package (pop), and stacking of die within a package, known as package-in-package (pip) or system-in-package (sip). numerous variation of pop and pip technologies are in use today including staking of packages by using through mold via (tmv™) interconnection technology. the following sections provide further discussions on specific conventional and 3d packaging technologies. fig. 3-2 2.5/3d packaging technologies showing conventional to advanced configurations. 3.2.1. package-on-package (pop) pop is a packaging technology placing one package on top of another to integrate different functionalities while still remaining compact in size. this packaging technology offers procurement flexibility, lower cost of ownership, better total system costs, and faster time to market. typically, designers use the top package for memory application and the bottom package for application-specific integrated circuits (asics), baseband, or microelectronics packaging technology roadmaps, assembly reliability, and prognostics 561 processor applications. by using this technology, the memory known-good-die (kgd) issue can be mitigated since the memory to be integrated with the bottom package can be burned-in and tested before integration. pop also answers issues with wafer thinning, die attach, wire-bond, and thermal dissipation. three categories of the stack technologies are: (1) pop with center mold and flip chip, (2) pop with partial cavity structure, and (3) through-mold via (tmv™). the tmv™ uses a matrix-molded platform for bottom pop construction and creates through-via interconnections to the top surface via a laser ablation process [17]. fig 3-3 illustrates the key elements of the bottom tmv™ pop developed by the package supplier for their internal qualification and joint smt studies. the 14 × 14 mm daisy-chain package incorporates a 200 i/o, 0.5 mm pitch top side interface, and 620 bottom bgas at 0.4-mm pitch. fig 3-3 cross-section top and bottom view of a new tmv™ pop package [19]. the benefits of tmv™ technology include the following:  removes the pitch vs. package clearance bottlenecks to support future memory interface density requirements enabling the memory interface to scale with csp pitch reduction.  improves warpage control and bottom package thickness reduction requirements by utilizing a balanced fully molded structure.  provides an increased die-to-package size ratio.  supports wire-bond, flip-chip, stacked die, and passive integration requirements.  leverages strong technology roadmaps and high-volume scale, from fine-pitch ball grid array (fbga), stacked die, flip-chip csp, and sip platforms.  integrates proven laser ablation technology available from a host of laser process equipment suppliers.  expected to improve board-level reliability of the stacked memory interface using rules developed by package supplier. 562 r. ghaffarian 3.2.2. package-in-package (pip) handsets and other mobile handheld products are defining a new application for packaging technology that goes beyond the realm of traditional packaging. the optimum solution often lies in a judicious combination or hybridization of these seemingly dissimilar technologies and approaches. one such package is often called pip. pip with wire-bonded stack die is well established. vertical chip stacking can be performed as chip-to-chip, chip-to-wafer, or wafer-to-wafer processes. stacked die products inside a package results in the thinnest package with the highest board-level reliability and lowest assembly cost. most of the time, stacked die are multiple memory chips and rarely mixed device types, such as stacked memory with logic devices added. special low-profile wirebonding has been developed and is a critical process for this technology. stacked die concepts utilizing silicon spacers or epoxy filled with spherical spacers have been used. in the silicon-spacer concept, a thin piece of silicon is used to separate the active dies in the stack. in the glue-spacer concept, this is accomplished with a spherical-filled die-attach. adding silicon into the package increases the bending resistance. associated with this is the increased risk and/or propensity for cracks during assembly and/or reliability/qualification testing, either in the package body (molding compound) or in the die itself. flip-chip bonding is also used in pip interconnection, either on its own or as a complement to wire-bonding. flip-chip configuration may be applied to either the upper die or the lower ones, depending on the intent of the design. flip chipping a bottom die directly onto the substrate enables that die to operate at a high speed. on the other hand, flip chipping a top die eliminates the use of long wires for connection to the substrate. 3.3. 2.5d/3d tsv packaging trends conventional 3d packaging technologies have limitation in meeting system performance, throughput, and power requirements. although pip and pop packaging technologies allow for two or more chips and packages to be interconnected, they do not offer enough density, bandwidth or power to meet the requirements of next generation product roadmaps. the trade-offs between placing more functions on a chip (system-onchip, soc) versus placing more functions within a package (multi-chip package, mcp, or system-in-package, sip) must be fully evaluated. optimizing overall performance as well as total cost-of ownership are equally important. and perhaps one of the most significant issues is accelerating time-to-market, as it is a strategic enabler to the end users. fig. 3-4 compares the performance advantages of 2.5d/3d ics to standard packages on a pcb; their relative interconnect density, thermal resistance, and power usage. a 2.5d ic package is a costand functional-effective interim solution instead of full 3d through silicon via (tsv) 3d packaging methods. the 2.5d packaging is defined by the use of a multilayer passive silicon interposer (tsv-less)—contrary to active interposer in 3d with tsv—as a substrate to interconnect multiple active die or die stacks in a sideby-side configuration. in a 3d ic tsv stack, solder bumps are used to join one die on top of another die (active) to allow the signals to travel between the die. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 563 fig. 3-4 2.5/3d packaging technologies showing conventional to advanced configurations. 3.3.1. 2.5d (passive tsv interposer or tsv-less) packaging trends the use of passive tsv interposer is key in 2.5d technology. in production of high i/o implementation, e.g., 2.5d tsv approach for virtex-7 fpgas, k. saban [18] presented that tsvs are used to route the signals through the silicon interposer down to flip-chip solder bumps located on the interposer‘s bottom side. this device has four fpga chips attached to a silicon interposer, which supports ~10000 silicon-speed connections between adjacent chips. the ics themselves use much smaller copper (cu) pillar micro-bumps for assembly onto the silicon interposer. for example, the 2.5d fpga with a passive tsv addresses two key requirements of the programmable die and packaging challenges. stacked silicon interconnect (ssi) technology interposer breaks the limitations of moore‘s law by using multiple smaller die rather one large die. it also enables reducing the time required to deliver the largest fpgas with the highest bandwidth in the quantities needed to satisfy end-customer volume production requirements. system-on-chip (soc) design is unable; however, to address these key technological challenges. an soc comprises millions of gates connected by complex networks of wires in the form of multiple buses, complicated clock distribution networks, and multitudes of control signals. successfully partitioning an soc design across multiple fpgas requires an abundance of i/os to implement the nets spanning the gap between fpgas. with soc designs including buses as wide as 1,024 bits, even when targeting the highest available pin count fpga packages, engineers must use data buffering and other design optimizations that are less efficient for implementing the thousands of one-to-one connections needed for high-performance buses and other critical paths. packaging technology is one of the key factors to this i/o limitation. the most advanced packages currently offer approximately 2000 i/o pins, far short of the total number of i/os at the flip-chip die level. at the die level, i/o technology presents another 564 r. ghaffarian limitation because i/o resources do not scale at the same pace as interconnect logic resources with each new process node. when compared to transistors used to build the programmable logic resources in the heart of the fpga, the transistors comprising device i/o structures must be much larger to deliver the currents and withstand the voltages required for chip-to-chip i/o standards. thus, increasing the number of standard i/os on a die is not a viable solution for providing the connections for combining multiple fpga die. stack silicon interconnect (ssi) technology solves the following key challenges:  the amount of available i/o is insufficient for connecting the complex networks of signals that must pass between fpgas in a partitioned design as well as connecting the fpgas to the rest of the system  the latency of signals passing between fpgas limits performance  using standard device i/os to create logical connections between multiple fpgas increases power consumption j. casey [19] summarized the current state of interposer substrates as shown in table 3-3. it was stated that the advancement of silicon performance is becoming more challenging as scaling is becoming more costly for technology solutions beyond cmos. integrated co-development of silicon and packaging solutions are needed to achieve new technologies with superior cost/performance metrics. volumetric scaling also will be critical to future performance enablement and achieved by (1) tightly coupled modules and components and (2) 3d stacking and interposer integration. table 3-3 key characteristics of ceramic, glass, and organic interposers for 2.5d packaging technology [18]. ceramic mcm organic mcm si interposer glass interposer organic interposer dielectric properties adequate good lossy excellent very good feature dimensions mechanically defined down to ~10 µm l/s si-like lithography display like down to 5 µm l/s cte induced stress very good moderately high excellent tailorable moderately high cost high moderate moderate tbd low– moderate availability available available available development development fig 3-5 shows the product application for these interposers identified in another presentation [20]. the silicon interposer will dominate in the high end use; whereas in the mid-end, silicon will be key technology while organic/glass may also play a role. in the low end, organic, low cost glass or even low cost silicon if they exist will play a role. specific production application are: (1) gaming, high definition television (hdtv), mobile tablets, computing, and servers, (2) high end graphics cards will be the initial focus of high bandwidth memory (hbm) memory integration, and (3) mobile space has the potential to follow based on availability of low cost solutions. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 565 fig. 3-5 market for 2.5d interposer options including silicon, glass, and organic materials. in a recent paper, c.g. woychik et al. [21] discussed the options for 2.5d technologies with emphasis on assembling micro-bumped die (mbd) to a si-interposer and then the interposer to an organic substrate. to achieve a high assembly yield and reliability, the key controls should be in place to minimize warpage, allow handling of extremely thin si wafer, and to ensure integrity of micro-bump interconnects with fine pitch (typically can be < 45 µm pitch). the high density of pads and the large die size make it extremely challenging to ensure that all of the micro-bump interconnects are attached to a thin si-interposer. the authors concluded that semiconductor fabrication facilities can produce robust and reliable devices with tsvs and that the manufacturing infrastructure exists to assemble the 2.5d packages in high volume. j. lau [23] summarized the impact of 3d ic integration on various industry sectors: (1) it has impacted a large number of industries including the chip suppliers, fab-less design houses, electronic manufacturing service, material and equipment suppliers, universities, and research institutes; (2) it has attracted the researchers and engineers to attend conferences, and workshops to present their findings and look for solutions of the latest technologies; and (3) it has forced industry to build standards, infrastructures, and ecosystems for 3d ic integration j.h. lau and c. hsinchu [23] presented a ―very low-cost interposer‖ using throughsilicon holes (tshs) with ability to build flip-chip die on both sides of the interposer for a 3d ic integration. the key feature of tsh interposers is that the holes are not metallized; thus, it eliminates several processing tsv steps including dielectric layer, barrier and seed layers, via filling, and cu revealing. the tsh interposers requires formation of with either laser or deep reactive ion etching (drie) on a piece of silicon wafer and redistribution layers (rdl). the top-side chip is interconnected through rdls, whereas to the bottom-side is interconnected through copper pillars and solder. t. mobley and s. cardona [24] reasoned that the use of the glass interposer technology allows for a better system solution by increasing performance and improving reliability. a glass display consists of glass interposer display, low stressed drilled holes, and copper vias cte matched to the display glass. the diameters of vias are approaching 40 µm in 300 µm thick glass wafers. the glass hole in this technology uses a funnel-like shape where the top side (entry) of the glass hole is 60 µm and the bottom (exit side) is 40 µm. the hole is then filled with copper material, thus creating a copper-based via. the 566 r. ghaffarian authors claim that the glass interposer technology is disruptive to the supply chain since the final via size is <50 µm and the copper is matched to the cte of the glass, creating a true hermetic seal. the authors added that glass 2.5d and 3d packaging technologies solve hermetic problems by the integration of electronics directly into the glass. a. shorey et al. [25] demonstrated the ability to generate well-formed through and blind vias and fully populated test vehicles using glass interposers. existing metallization technology was leveraged to generate very good cu filling performance in glass in both wafer and panel formats. the electrical performance of glass generates tremendous incentive for using glass as a tgv substrate for 2.5d and 3d applications. additionally, ability in tailoring of material properties such as cte as well as the ability to form glass in thin large sheets of high quality enable development of cost effective processes. through-package vias (tpvs) and re-distribution layers (rdls) are two key building block technologies for glass interposer. the tpv technology was presented by j. tong et al. [26] covering detailed electrical modeling, design, and characterization using 3d glass interposers. high frequency characterization, up to 30 ghz, was presented for high aspect-ratio 55-µm diameter tpvs in 300-µm thin glass, formed by a novel focused electrical discharge method that is capable of greater than 1000 vias per second throughput. such a glass interposer is ideal for 2.5d and 3d package integrations for high performance digital systems with high logic-memory. glass has been proposed as a superior alternative to silicon because of its excellent electrical property and its scalability to large panel sizes leading to lower cost. fig. 3-6 shows another approach for 2.5d interposer is to use mixed of silicon bridges in a laminate rather than a more expensive silicon interposer [27]. this interposer packaging technology, embedded multi-die interconnect bridge (emib), enable very high-density die-to-die connections only where needed; hence, a lower cost and simpler 2.5d packaging approach. standard flip-chip assembly within package is used for robust power delivery and to connect high speed signal directly from chip to the package substrate. emib is available for 14nm foundry use. fig. 3-6 a low-cost 2.5d laminate with silicon embedded bridge for effective flip-chip routing [27] microelectronics packaging technology roadmaps, assembly reliability, and prognostics 567 3.3.2. 3d (active tsv interposer) packaging trends this category of packages with tsv stack die is often called ―3d integration‖ in order to distinguish them from 3d packaging. stacked memory die is a perfect choice for using tsv technology as all interconnections of each die align with the corresponding die located above and below. however, this is merely a building block for future designs as mobile terminals to supercomputers, which require maximum computing power using limited resources such as power consumption and volume for the next-generation of information processing devices. a 3d-integrated logic device with stacked memory matches this objective because the shortest and highly parallel connection between logic and high-capacity memory reduces the power consumption due to long-distance and high-frequency signal transmission, and realizes the highest device density. therefore, 3d tsvs refer to a stack package that contains two or more chips (integrated circuits) stacked vertically so that they occupy less space on a printed circuit board (pcb) (usually the same footprint as the bottom chip). tsvs replace edge wiring by creating vertical connections through the body of the chips. the resulting package has no added length or width. because no interposer is required, a tsv 3d package can also be flatter than an edge-wired 3d or 2.5d package. not all tsvs are the same. there are many variations of this technology. the key on use of tsv technology is to address when it is advantageous to go vertical and when it is not. stacking two wafers and integration with vertical vias is costly. this cost must be justified through performance gains, functional gains, or cost savings elsewhere in the system. the market for tsvs will be established when the benefits justify the cost. there is a growing consensus that several mainstream circumstances exist that justify the 3d integration. use of tsv 3d integration is rarely justified for form-factor miniaturization alone since in most circumstances, it is much more cost-effective to meet the form-factor needs by stack and wire-bond, or otherwise vertically integrate, at the package level. however, when identical memories are considered, use of tsv technology is advantageous since edge wire-bonding cannot easily be used. in addition, there are system advantages to thinning and stacking multiple memory die such that the aggregate memory has the same end form factor as one memory package. the most explored advantage of 3d is its reduction of the interconnect distances between chip functions. many researchers justify 3d from interconnect delay and interconnect power perspectives. from a theoretical viewpoint, the advantages can be substantial. several studies have presented a rent‘s rule style of analysis supporting this premise [28, 29]. the basic argument relies on the fact that with each additional layer of transistors, there is a similar increase in the number of circuit functions that can be interconnected within a fixed wire length. this leads to a 25 percent or greater decrease in worst-case wire length [30], a similar decrease in interconnect power [31], and a modest decrease in chip area. however, experience shows that many designs do not realize the large theoretical advantages in practice. fortunately, with careful choice, appropriate design applications can be found. for example, field programmable gate arrays (fpgas) are very interconnect-bound and can achieve substantial performance and power improvements when recast in 3d [32]. j. vardaman [33] and p.e. garrou et al. [34] stating that stacking memory die to create a new ―super-memory‖ chip is not the only 3d application involving memory. an interesting area of application is targeting logic-on-memory, which creates a high-bandwidth memory 568 r. ghaffarian interface to the logic. for many end applications, the demand for memory bandwidth is growing rapidly. in many cases, this is due to the increased use of multi-core processors. with the addition of each processor comes a similar requirement for increasing memory bandwidth. similar bandwidths will be beneficial in other applications, including digital signal processing, graphics processing, and networking. this, by itself, gives a fairly natural case for 3d, one that has been only lightly explored, and then mainly in the context of general-purpose computer micro-architecture. for example, 3d caches can lead to 10 to 50 percent reductions in cache latency, depending on the benchmark used. table 3-2 lists strengths and weaknesses of various 3d technological approaches discussed in details in this section. the table also includes embedded die and use of newly implemented fan-out wafer level package for stacking build up. regarding the 3dtsv (3dic), while the drivers for their applications remain constant, the time line for its adoption continues to shift due to technical challenges, infrastructure issues, and cost. progress has been made in via formation and filling, but process steps such as debonding during wafer thinning still remain problematic. progress has been made in design tools and methodology, but low-power design of 3dic stacks remains in the early stages. test, inspection, and reliability are yet to be fully implemented. improvements in process yield and thermal solutions that lower cost are necessary. key remaining technology gaps in 3d ic readiness are summarized in the following [35].  availability of commercial 3d electronic design automation (eda) tools  micro bumping and assembly for stacked die  assembly of die on interposers  the debond step in temporary bond/debond  thermal design and dissipation when logic is part of the stack  test methodology and solution  reliability data including drop test data  yield improvements that lower cost  infrastructure related issues such as hand-off point table 3-2 key strengths and weakness of 3d packaging technologies. 3d pkg tech strengths weaknesses microelectronics packaging technology roadmaps, assembly reliability, and prognostics 569 4. embedded component technologies passives usually refers to resistors, capacitors, and inductors; but it can also include thermistors, varistors, transformers, temperature sensors, and almost any non-switching analog device. the discrete passive component is a single passive element in its own leaded or surface mount technology (smt) package. an on-chip passive is a passive element that is fabricated along with the active elements as part of the semiconductor wafer (die) where an on-package version uses passives on the package substrate using smt. for example, decoupling capacitors can be placed on either the top or bottom of the package. each of these locations has its associated advantages and disadvantages. top side decoupling capacitors (see fig 4-1) have the advantage of efficient space utilization, but overall system equivalent series inductance (esl) can be compromised because of the larger distance between the capacitors and the power and ground pins of the microprocessor. on the other hand, path length is decreased for bottom-side decoupling, but valuable real estate that could be used for i/os is taken up. fig. 4-1 flip-chip column grid array (cga) with exposed decoupling capacitors. the concept of embedded, integrated, integral, arrayed, or networked passives involves manufacturing them as a group in or on a common substrate instead of discrete packages. in general, embedded components are defined as passive or an active device that is placed or formed on an inner layer of an organic circuit board, module or chip package such that it is buried inside the completed structure, rather than on top or bottom surface. the drivers are similar to sip. primary market segments using embedded components today include defense/aerospace, network infrastructure, and mobile communications. the key advantages are: 570 r. ghaffarian  reduced product cost  added features  reduced size  improved performance  accelerated time to market itrs defines two types of passive/active devices for embedded applications. embedded passive devices in pcb are categorized into either chip devices or formed devices. also, there are two types of active devices: (1) wafer level package and (2) flip-chip die. the wafer level uses die with no copper post to enhance mechanical strength whereas the flipchip uses die with stud bump or copper posts which are embedded in an organic laminates substrate. fig 4-2 illustrates embedded packaging/pcb technology trends. fig. 4-2 embedded passive and active in printed circuit board and package. 4.1. embedded passives embedded-passive technology plays a crucial role in the packaging platform because the passive components often occupy more than 80% of the real estate in the board, while the assembly cost accounts for around 70% of a product assembly cost. the embeddedpassive technology makes an overall board size smaller, leading to the higher throughput. it also helps improve the electrical performance because it eliminates soldering, which in turn improves system reliability while achieving a cost reduction and a fast time to market by removing surface-mounted devices (smds). such advantages as lower cost, compactness, reliability, and higher performance make the embedded passive technology a suitable package solution for the systems as well as a key technology for the higher integration. substrates for embedded passives are either organic pcb, ceramic (htcc or ltcc) or thin film on ceramic or glass. ltcc (low temperature co-fired ceramic) is manufactured in a green ceramic state and then fired to produce a homogenous substrate. the techniques employed are widely available in the literature. once fired, the substrate variates from the green state dimension introducing variability in the design. being a 3d structure a planar em field solver must be utilized for simulation. coupling between structures cannot be microelectronics packaging technology roadmaps, assembly reliability, and prognostics 571 solved exactly with today‘s software capabilities, leading to an iterative design approach. iterations numbering 3-5 to complete a design are not uncommon leading to a fairly lengthy and inflexible design cycle in a world where speed is essential to get products to the market. today‘s ltcc systems utilize a number of base materials, some openly available such as dupont‘s ltcc and others proprietary. establishing qualified, reliable, standardized processes, key to cost effectivity, is difficult with these variables introduced. in addition, panel sizes are variable among vendors. laminates have reduced in cost with the ability to standardize on materials and equipment and maintain hvm equipment compatibility. with the variation in panel sizes, standardizing the equipment set has meant setting the ltcc substrates to standard sizes. this can result in poor panel efficiency from the ltcc substrates. of course, dedicated optimized lines for ceramic processing are likely to reduce the costs associated with this aspect. ceramics can either be sawn or snapped. obviously snapped solutions should be the most cost effective eliminating sawing and minimizing saw streets. however, processes used for ceramics often have the impact of singulation before it is time, resulting in yield loss. sawing requires additional time in process and requires more frequent blade changeover than laminates. 4.2. integrated passive devices (ipd) integrated passive devices (ipds) are subcomponents that exclusively contain passive components. the ipds play a crucial role in the packaging technology because the passive components often occupy more than 80% of the real estate in the board, while the assembly cost accounts for around 70% of a product assembly cost. the embedded-passive technology makes an overall board size smaller, leading to the higher throughput. it also helps improve the electrical performance because it eliminates soldering, which in turn improves system reliability while achieving a cost reduction and a faster time to market by removing surfacemounted devices (smds). advantages such as lower cost, compactness, reliability, and higher performance make the ipd technology a suitable package solution for the systems as well as a key technology for the higher integration. the ipd may contain all three types of passives (r, l and c, resistor, inductor, and capacitor, respectively in any combination. the elements can be connected to each other in order to form a certain network, matching or filter functions, or stand-alone elements to serve their function. the introduction of new materials like thin oxides or filled polymers as dielectrics as well (as the introduction of deep silicon vias) is extending the value range of capacitors into the microfarad realm. besides standard redistribution wiring systems, it is also possible to form ground planes and transmission lines to create impedance-controlled rfsignal transmission. ipd packaging can be categorized as either stand-alone chip scale package ipd devices or integrated ipd modules. chip-scale ipd packages contain the entire ipd network in a single system in package (sip) structure. this single package is designed to replace a surface mount passive component network. it is common to see these single packaged networks in ball grid arrays (bgas), quad flat no leads (qfns), and flip-chip packages. the area array packages help take full advantage of the size reduction achieved by using ipd technology. reference [36] presents an example of a wafer-level chip scale module package (wlcsmp). this category of module package is the advanced modular architecture that integrates mixed ic technologies with a wide variety of passive devices such as resistors, capacitors, inductors, filters, baluns, transceivers, receivers, and interconnects directly onto a 572 r. ghaffarian silicon substrate. the result is a set of high performance system level solutions that provide a significant reduction in die size and weight. in order to reduce the board surface area and system cost associated with passive components, recent movements in the industry are focusing on alternative mounting methods. alternative mounting include on-chip, multiple value discrete passive components (arrays) mounted onto boards or substrates, passives fabricated within the board (embedded), and combinations of all of the above. one emerging method is the array or network approach known as "integrated passive devices" or ipds. integrated passives are simply collections of passive devices made using semiconductor of thin-film methods, packaged as an integrated circuit (ic). v. solberg [37] presented the key advances and hurdles in implementation of passive and active technologies. the key findings are listed in the following.  embedded circuits are being produced successfully in very high volume worldwide.  embedding the semiconductor is where many companies may find a significant roadblock  procurement of semiconductors in a wafer format  outsourcing metallization and thinning  confidence in semiconductor quality (kgd)  sequential electrical testing during pcb fab.  testing embedded mixed function assemblies  the pcb fabricator will be expected to perform board-level functional electrical testing.  when outsourcing embedded component pc boards, the originating company will likely bring together the two primary disciplines; the circuit board fabrication specialist and the assembly service provider.  these partnerships must be willing to adjust their portion of the generated revenue against the overall process yield (includes the sharing of losses from fabrication process defects and damaged components). 4.3. embedded active recently, in addition to embedding passive components, attempts are being made to embed active chips. for the embedded active structure, thinned active chips are directly buried into a core or high-density interconnect layers rather than placed onto the surface. currently, active chips can be embedded in many different ways within the categories of chip-first, chipmiddle, and chip-last. embedding is expected to reduce the parasitic effects of interconnects (reduced interconnect length) resulting in lower power dissipation, and providing better electromagnetic shielding. they also offer smaller and thinner package profiles. in general, the chip-first technology has a number of challenges:  the chip, once it is embedded, is subjected to a number of processing steps and can be affected due to the fabrication.  serial chip-to-build-up processes accumulate yield losses associated with each process.  defective chips cannot be easily reworked in current embedded package structure. thus, this technology needs 100% known good die (kgds).  the interconnections in the chip-first approach, which are direct metallurgical contacts, can encounter fatigue failures due to thermal stress.  thermal management issues are also evident since the chip is totally embedded within polymer materials during the substrate or build-up layer processes. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 573 l. del castillo, et al. [38] presented their evaluation on ultra-thin flexible microelectronics for use in applications such as conformal and wearable electronics by embedding less than 50µm silicon die. as shown in fig. 4-3, three techniques have been developed to fabricate ultrathin, flexible electronics: (1) thinned die flip-chip bonded on polyimide or liquid crystal polymer (lcp) flex, (2) thinned die laminated into lcp films, and (3) thinned silicon die embedded in polyimide. the manufacturing methods and materials for each of these approaches is described in the following sections. fig. 4-3 three techniques of thinning die: polyimide and lcp substrate with solder assembly (top); lcp substrate with thermal compression bond au stud bump assembly (middle); thinned si die embedded in polyimide with thin film interconnect (bottom) [38]. h. hayashi et al. [39] disclosed a new embedded package configuration, wide strip fan-out package (wfop), it is a face-down mounting (see fig. 4-4), which uses a metal plate (stainless steel or copper) as the base plate of the redistributed interconnection layer. the dies are mounted on the metal plate, and the resin between the dies acts as a stress buffer and insulator for the interconnections. the advantages are a lower package warpage, precise fabrication process control, lower thermal resistance, and shielding of noises. the author showed reliability test results and multiple die stacking configuration for use in memory devices. 574 r. ghaffarian fig. 4-4 a new embedded package, wide strip fan-out package (wfop), which uses a metal plate like. pcb based embedding technologies combine the advantages of standard printed circuit manufacturing with additional highly precise component assembly. generally, two different approaches of component assembly are used: face up, where the assembly of the semiconductor die is down with its contact pads up, comparable to a die for wire-bonding, or face down where the die is assembled with its contact pads down, like a flip chip. the face-up technology enables electrical and thermal contact using both conductive and non-conductive adhesives, solder, and low temperature sinter materials for the die-attachment. because of its heat dissipation, this approach is widely used for various embedded active die including power metal oxide field effect transistors (power-mosfets), insulated gate bipolar (igbts), and diodes. since the face-down technology is comparable to the conventional wire-bonding, it is already in high volume application. the process starts with embedding the die with placement of resin-coated copper (rcc) or prepreg with conductive adhesive and vacuum lamination followed with a microvia build for electrical connection to the embedded chip. such substrates with embedded dies can be further processed like standard pcb inner layers. fig 4-5 shows an example of a face down embedded component technology, a dc-dc converter. this package has one embedded die with three smd components assembled on top of the pcb [40, 41]. fig. 4-5 configuration of wafer level chip scale module package (wlcsmp). microelectronics packaging technology roadmaps, assembly reliability, and prognostics 575 j. vardaman and k. carpenter [42] presented the status of embedded devices and applications. it was stated that the key driver for the embedded active is demand for more thinness requirement, but the secondary advantages are for improved robustness and security. for embedded passive, the key driver is requirement for higher operating frequencies enabled by placing decoupling capacitance close to the processor. the technology requirements for embedded actives are thin-film, laminated or build-up with the first applications are for ultra-thin pop for mobile products. the technology for embedded passive is primarily capacitors in build-up or laminate substrate. application processors with embedded capacitors in high volume manufacturing (hvm) for mobile phone with future applications in high-end networking and communications. 5. other packaging trends and hierarchy and materials 5.1. moveable (mems) and exposed (moem) packaging microelectromechanical system (mems) are integrated micro devices or systems combining electrical, mechanical, fluidic, optical (moem), (and all physical domains) components fabricated using integrated circuit (ic) compatible batch-processing techniques and range in size from micrometers to millimeters. in the united states, the technology is known as mems, in europe as microsystems technology (mst), and in japan as micromachines. mems and optical mems requires microfabrication of a silicon wafer. silicon has been used as a mechanical substrate for more than 25 years. two commonly used silicon microfabrication techniques exist: surface micromachining and bulk machining (see fig. 5-1) [43-45]. fig. 5-1 surface and bulk micromachining fabrication and structure mems devices include microscopic machines such as valves, pumps, switches, and actuators. mems are unique in that they perform both mechanical and electrical functions, 576 r. ghaffarian and physically move. mems both harvest data and issue commands based on the data. a mems with a miniature tuning fork, for instance, can gather information about the direction of sound waves, which can prompt a command to shift the position of a microphone for better sound quality. current technology mainly addresses millimeter (mm) to micrometer (m) level mems devices. mems are built similar to integrated circuits. they are fabricated on silicon wafers by patterning various layers of materials and releasing (under-etching). after release, these tiny structures are capable of motion. if the microstructure is a mirror, and the device can move and manage light, the device can be considered an optical mems, also known as a moems. some of the mems technology has been around for years. computer printer heads, automotive air bag actuators, brake sensors and engine heat sensors are examples of mems devices found today. analog devices' adxl line of air-bag accelerometers and texas instruments' digital micromirror device (dmd) display technology are commercial success stories. mems devices have traditionally been used to gather ambient data like temperature or pressure, but are expanding into more complex uses that involve optoelectronics and biotechnology. for example, mems devices can be used in new drug testing in the pharmaceutical industry, or in blood-screening sensors that can perform complete tests at bedside. however, in recent years, need for mems/moems packaging is further driven by consumer products including gaming and smartphone. consumer products are pricesensitive and the market also needs quick turnaround times, smaller foot prints, and packages with a high degree of reusability and package standardization. previous mems applications were custom made and application specific and generally tailored for highreliability such as automotive industry. transition from the automotive to the consumer market poses additional cost challenges and standardization challenges, especially the latest push for sensor fusion and internet of things (iot). this situation posed a challenge in transitioning. furthermore, the automotive market was not price sensitive at that point, but long-term reliability was key. he added that the latest push is for sensor fusion and iot applications, so there is an even greater need for lower costs and standardization. in the ic industry, electronic packaging must provide reliable, dense interconnections to the multitude of high-frequency electrical signals. in contrast, mems packaging must account for a far more complex and diverse set of parameters. it must first protect the micromachined parts in broad ranging environments; it must also provide interconnects to electrical signals, and in some cases, access to and interaction with the external environment. examples are as follows:  the packaging of a pressure sensor must ensure that the sensing device is in intimate contact with the pressurized medium, yet protected from exposure to any harmful substances in this medium.  packaging of valves must provide access for electrical signals and fluid interconnects. the mems packaging is largely borrowed from the ic industry in an effort to benefit from the existing mature technology. designing packages, e.g. a micromachined sensor package, involves taking into account a number of important factors. some of these are shared with the packaging of electronic ics, but many are specific to the mems applications. due to the variety of mems devices, it is not possible to specify a generic package. it is, however, possible to make some general comments. the package must be microelectronics packaging technology roadmaps, assembly reliability, and prognostics 577 designed to reduce internal/external electrical (or electromagnetic) interference, dissipate heat in the device, withstand high operating temperature and minimize cte. the package should also be designed to minimize stress on the device due to external loading, and it should be rugged enough to withstand the environment in which the device will be used. connections to the package must also be capable of delivering the power required by the device. connections out of the package must have minimal sources of signal disruption (e.g. stray capacitance). the package also has to have the appropriate fluid feed tubes /optical fibers, etc., attached to it, and aligned /attached to the device inside. three categories of widely adopted packaging approaches in mems are: ceramic, plastic, and metal, each with its own merits and limitations are discussed below. standard packages are metallic packages: metallic packages are attractive for mems because they are robust and easy to assemble, but they are being replaced by plastic or ceramic packages. metal packages satisfy the low pin-count (input/output, i/o) requirements of most mems applications; they can be prototyped in small volumes with rather short turnaround periods and they are hermetic when sealed. for example, metal packaging is used for fluidic isolated pressure sensors that are intended for operating in industrial environments. the silicon sensor is immersed into an oil filled stainless-steel cavity that is sealed with a thin stainless diaphragm. the sensor measures pressure transmitted via the steel diaphragm and through the oil. the robust steel package offers hermetic protection of the sensing die and the wire-bonds against adverse environmental conditions. ceramic packages: ceramics are hard and brittle materials with high elastic moduli. a ceramic package often consists of a base or a header onto which one or many dice are attached by adhesives or solder. wire-bonding is suitable for electrical interconnects. flip-chip bonding to a pattern of metal contacts on the ceramic package works equally well. the final step after mounting the die on the base and providing suitable electrical interconnects involves capping and sealing the assembly with a lid, the shape and properties of which are determined by the final application. plastic packages: plastic packages, unlike their ceramic or metal counterparts, are not hermetic. two approaches to fabrication plastic packages include post-molding and premolding. the plastic post-molded housing is molded after the die is attached to a lead frame. the process subjects the die and the wire-bonds to the harsh molding environments. in premolding, the die is attached to a lead frame over which plastic was previously molded. however; the most popular standard package styles today includes soic and laminate lga/fpbga. the qfn and laminate lga/fpbga packages also could become standard platforms for sensor fusion and iot applications and meet cost vs. performance objectives in the mobile industry. though sensor fusion and iot applications are primarily aimed at the consumer market, these package also have the potential to transition to the automotive market, which will benefit by having these standard platforms. also, mems and other sensors in sip packaging using fowlp technologies is another methods for further reducing cost and form factor. 5.2. optoelectronics packaging fig. 5-2 shows the packaging and connectors trends for optoelectronics. optical interconnects have been developed as the next generation packaging approach since the design of intra-chips interconnection has reached its capacity in ghz design. engineers have been struggling to incrementally improve the interconnect density through the 578 r. ghaffarian optimization of silicon processes and materials. even if the ultra-fine scale chip level interconnect is capable to meet tera-hz processing power, the designers will have to overcome the challenges in interconnect density required for the fan-out to system level. industry has continued to build on the development of fiber optics, which has proved to be a reliable and high performance carrier as a long distance network. the idea of having optics as chip-to-chip interconnection is currently practicing, and is not far from the foreseeable future. optical waveguides will form the basis for next generation high performance and high speed optoelectronics and micro opto-electromechanical system (moems). there are four types of multimode waveguide designs available in the industry, namely,  free space optical interconnect  buried waveguide inside the printed circuit board (pcb)  optical layer on top of pcb  flex-foil based optical interconnects fig. 5-2 optical packaging trends from conventional to advanced packaging technologies. 5.2.1. packages for single optical components single optical components (lasers, photo diodes) are mainly used for simple electro-optical as well as opto-electrical conversion. package types depend on device functionality and application standard. interfaces are generally by pigtail, optical connector or free-space optical transmission. examples are:  to-package with pigtail or connector  butterfly-package with pigtail or connector  plastic-dil (dual in line) with connector or free air interface  smd-packages with connector or free air interface  specific metal packages (tray, lead frame) with pigtail  moem new advanced packaging including lga, pbga, wlp, and qfn microelectronics packaging technology roadmaps, assembly reliability, and prognostics 579 package type, pin number, size, assembly technology, etc. are determined by functionality, motherboard structure and cost. there is no difference between application for transmitter or receiver. the most popular and expensive package for high-reliability application is the totype. metal cap with optical window, a metal can and assembly, mainly by soldering or welding, make the system hermetic, highly thermally conductive, electromagnetically protected and independent from environmental influences. the to-can package can integrate lenses, filters, fiber retainers, etc., but their uses are limited for applications up to 10 gbit/s (transmitter). increasing frequency and functionality make it necessary to introduce larger smd packages. in this case, more space is available for components like peltier elements and temperature control units for transmitters (tx) or tias and shields for receivers (rx). systems are generally assembled on a lead frame structure and later over-molded with epoxy. this makes the technology more flexible and cost effective for mass production. in the future, smd solutions will come to the fore. as discussed in mems?moem section, other more dense package technologies become available in order to accommodate consumer needs for lower cost and mass production. in summary, feature requirements and integration for energy and band-width efficient photonic packaging, active and passive, are different from ic packaging. for example, hybrid integrated silicon photonic components require ultra-fine flip-chip interconnects for energy efficiency, single-mode optical interfaces (waveguide-to-waveguide or waveguide-to-fiber) require sub-micron alignment and placement accuracy, and pcbs may require embedded optical waveguides and couplers to facilitate optical ics. it means that the photonics-based communication highways needs to be effectively integrated with their electronic systems requiring development of common photonics/electronics packaging interfaces. 5.2.2. 3d packages for cmos imaging sensors (cis) packaging technology for cmos imaging sensors (cis) sensors used in most type digital cameras now advance to using 3d stack, stacking optical on processor. the cmos sensors replaced ccd technology, the first imaging sensor for consumer digital cameras. the integration of chip technologies, micro optical components and packaging for building up a real system in a package (sip) (for optoelectronic application) needs developments in many areas in order to achieve higher image quality for the ccd sensors. the main difference between cmos and ccd sensors is that in a cmos sensor, the charges are not passed along a column of pixels, but rather each pixel has its own readout unit. on top of this, unlike ccds that output an analog signal that has to be converted to digital before the camera‘s image processor can interpret it, a cmos sensor outputs a digital signal directly. cmos sensors also have lower power consumption than ccds, which makes them especially suited for video recording and cameras with live-view functions. another sensor was introduce in 2012, called back-side illuminated (bsi) cmos sensor [46]. the main difference between the normal cmos sensor and the bsi-cmos sensor is that the former has its circuitry on top of the photosensitive layer, which means that the incoming light is partially blocked before it hits the pixels. bsi-cmos sensors, which are used in many smart phone and compact cameras today, have the circuitry behind the photosensitive layer. since their layout is technically inverted, it is as if a regular cmos sensor were illuminated from behind–hence the designation ‗back-side illuminated‘. this technology now advanced to 3d stack, stacking optical on processor. the color pixels require fewer metal interconnect layers and high voltage, lower temperatures 580 r. ghaffarian during processing and longer anneal times whereas the logic portions of the circuit are quite the opposite needing many more layers of interconnect and low voltage, higher processing temps and shorter anneal times. it therefore makes sense to fabricate these layers separately and stack them. addition of memory to the stack is the next step in the development. 5.3. rf, multi packaging fig. 5-3 depicts radio frequency (rf) packaging technology trends. the need for analog/mixed-signal and rf content arises that usually is difficult to integrate. system on chips (soc) and system-in-package (sip) are key enabling technologies for digital and rf micro miniaturization and system integrations on silicon, ceramic and organic substrate platforms, offering diverse functionality in a single module. embedded chip technology is being accepted for miniaturization of rf, base band and other mixed signal modules. the size reduction of rf modules can be achieved by using embedded-passive technology. in addition, multi-layer substrates with high density interconnects are also critical in meeting size targets. accordingly, the need for an extended supply of high-frequency packaging materials with high performance has become critical. teflon and ceramic-based materials have been commonly used as high-frequency applications for many years fig. 5-3 rf packaging technology trends as an example, for rf circuits the low temperature co-fired ceramic (ltcc) solution may provide the smallest size and also good cost effectivity. for the designer the ability to implement passives, layered shielding and transmission line structures in a high ε r dielectric along with its die interconnectivity and routing capability makes ltcc an attractive solution set. passives can be made with tolerances in the 3-5% range, multiple layers (14-20 are common) are available and the substrate is rugged when properly sized to the motherboard. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 581 variation in ltcc introduces potential variation in the electrical performance of rf circuits and may result in substrate binning, sub-lot testing, component matching and solder paste screen matching. the manufacturing and inventory logistics of such a solution may severely impact the cost of the solution. the two most costly manufacturing processes for ceramic are die protection and singulation. die protection for ceramics is typically accomplished with a silicone glob-top followed by the application of a ceramic, plastic or metal cap to provide a handling and marking surface. the metal cap is usually soldered. metal covers have the ability to provide shielding in a larger scale integration such as the transmit chain for a cellular phone. warpage of the substrate can occur making singulation difficult. an alternative solution to this approach is to leverage over molding utilized in laminates to ceramics. in this case the ceramic is overmolded beyond the edges of the substrate panel providing the die protection and utilizing a very cost effective array solution. if shielding is required this can be captured in the overmold. ltcc processing will evolve and design tools will progress such that this medium will gain more acceptance in rf sip solutions for high levels of integration. 5.4. hybrid/multi-chip packaging conventional leaded packages generally have larger footprints than the chips, as much as 4 to 10 times larger and are much thicker, 4x or more, than the die within. conventional packaged parts not only make it difficult to meet the smaller footprints, but have high package parasitics and can be susceptible to emi/ems concerns. multi-chip and hybrid technology can handle these requirements as they tend to be a system packaging solution rather that one or two different chips, such as most 3d packaging. fig. 5-4 presents the multi-chip packaging technology trends. fig. 5-4 multi-chip packaging trends 582 r. ghaffarian for high-reliability application, hybrid dc/dc converters are power supplies that are fabricated with bare die as compared to using packaged parts. elimination of the intermediate packages allows the size of the dc/dc converter to be dramatically reduced. all parts are mounted on ceramic substrates which are well attached to the baseplate of the package. the dc-dc power converter hybrid is one of the most difficult hybrids to build as it consists not only of discrete resisters and capacitors and microcircuits, but also has larger components such as magnetics and inductors. the combination of these small and large components makes this technology very challenging to manufacture consistently. 5.5. packaging materials fig. 5-5 shows materials technology considered for conventional and advanced packaging technologies. new materials have been developed and are included in most roadmaps. changes from sn/pb solder to no lead alloys to cu pillars are being used in flip-chip (fc) technology. whether it is flip-chip in package (fcip) or flip-chip directly on a board (fcob). as discussed earlier, wafer fabs are using new chip-level dielectric materials. one of these materials is low-k dielectric. assembly challenges for low-k devices are primarily mechanical due to the weak dielectric material. potential problems include cracked diffusion barriers, copper diffusion into low-k polymers and cracking of the low-k material. low-k polymers tend to have high tce and low thermal conductivity. these new materials force the choice of appropriate underfill materials to accommodate these stresses. there has been increasing interest in the development of electronic circuits on flexible substrates to meet the growing demand for low-cost, large-area, flexible and lightweight devices, such as roll-up displays, e-papers, connectors, and keyboards. organic materials have attracted a lot of attention for building large-area, mechanically-flexible electronic devices. these materials are widely pursued since they offer numerous advantages in terms of ease of processing, good compatibility with a variety of substrates, and great opportunity for structural modifications. fig. 5-5 materials for packaging technologies microelectronics packaging technology roadmaps, assembly reliability, and prognostics 583 5.6. packaging interconnections and hierarchy for surface mount technology (smt), packaging hierarchy defines different manufacturing and system levels. definition of electronics elements and system level (e.g., defining interconnects between system levels) allows value chain participants to capture value and enable innovation. furthermore, the acceptance of definitions allows value chain members to develop materials and technologies optimized for use within specific system levels. for example, the jisso international council (jic), a mix of membership from asian, european, and north american members, was formed with the aim of promoting a strategic partnership among organizations interested in the total solution for electronics interconnecting, assembling, packaging, mounting, and integrating system design. fig. 5-6 shows a recent proposal by jisso with an added expansion on definition of packaging hierarchy [47, 48]. fig. 5-6 smt packaging hierarchy presented by jisso. the definition of interconnection hierarchy includes the following levels [47, 48]. level 0 – electronic intellectual element: the intellectual property of an item pertains to the idea or intelligence imported or described in a formal document (protocol, standards and/or specifications), design entity, or patent disclosure. the information may be in hard or soft copy and can include computer code or data format as a part of the descriptive analysis. the characteristics are described as to their physical, chemical, electrical, mechanical, electromechanical, environmental, and/or hazardous properties. level 1 –electronic element: uncased bare die or discrete components (e.g., resistor, capacitor, diode, transistor, inductor, or fuse), with metallization or termination ready for mounting. this can be an ic or a discrete electrical, optical, or mems element. individual elements cannot be further reduced without destroying their stated function. level 2 – electronic package: a container for an individual electronic element or elements that protects the contents and provides terminals for making connections to the rest of the circuit. the package outline is generally standardized or meets guideline standards. the package may function as electronic, optoelectronic, mems, or system in package (sip), and may in the future include bio-electronic sensors. level 3 – electronic module: an electronic sub-assembly with functional blocks, which is comprised of individual electronic elements and/or component packages. an individual 584 r. ghaffarian module having an application-specific purpose including electronic (e.g., sip), optoelectronic, or mechanical (mems). the module generally provides protection of its elements and packages, depending on the application to assure the required level of reliability. the module may be a company standard (catalog item) or custom (oem-specific). note: there will likely be some subdivisions of level 2 and level 3 descriptions to increase the granularity and clarity relative to what is included within each of these levels. level 4 – electronic unit: any group of functional blocks that have been designed to provide a single or complex function needed by a system in order for the system to serve a specific purpose. the electronic unit may be comprised of electronic elements, component packages and/or application -specific modules. the function of the electronic unit may be electronic, optoelectronic, electromechanical, or mechanical or any combination thereof. the function may in the future include bio-electronic applications. level 5 – electronic system: a completed, market-ready unit dedicated to combining and interconnecting functional blocks. the functional blocks are generally comprised of electronic units, but may also include electronic modules, electronic packages, or electronic elements. the electronic system product can include a housing, a backplane or a motherboard (into which the assemblies, modules, packages, or elements are inserted), and the cabling (electrical, optical, or mechanical) needed to interconnect the total functional block(s) into a configured system. the electronic system can vary in complexity from very simple to highly complex. fig. 5-7 expansion of smt packaging hierarchy with inclusion of new developments in packaging, including wafer levels and 3d stacks. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 585 the interconnect hierarchy has evolved since the introduction of the transistor in 1960 [48]. fig. 5-7 compares the traditional view of the hierarchy (lower left) to the emerging microelectronic technologies with growing ambiguity in interconnection level definition. in the early days, the divisions of levels for the various tasks involved in the creation of an electronic system were well defined. the semiconductor manufacturer created the integrated circuits (ics); the ic chips were packaged for protection; a printed circuit facility built a substrate according to a design. next, the package was assembled onto a board (using a soldering process) and used as ―daughter card‖ for the next assembly of motherboard. the completed assembly would then be packaged in a suitable format, whether a computer, telephone switch, internet router, or any other product. now, there are new interconnections, such as a wafer-level packages and 3d stacks; some lack a clear category or definition. the blue area in the figure shows added new interconnections with lack of clear category; therefore, there is a need to find a way to embrace the emerging technologies that are already being deployed to create next generation products. 6. thermal cycle reliability of packaging assembly 6.1. conventional reliability methods reliability under thermal stress for package, pcb, and assembly depends on the reliability of constituent elements, e.g., the pcb and its global/local interfaces (attachments). as schematically shown in fig. 6-1, three elements play key roles in defining reliability for a system, global, local, and interconnections. the characteristics of these three elements — package (e.g., die, substrate, solder joint, and underfill), pcb (e.g., polymer, copper (cu), plated through hole, microvia), solder joints (e.g., via balls, columns) — together with the use conditions, the design life, and the acceptance failure probability for the electronic assembly determine the subsystem reliability. in other words, reliability is the ability of a system (here microelectronics) to function as expected under the expected operating conditions for an expected time period without exceeding the expected failure levels. however, reliability is susceptible to early failure by infant mortality due to workmanship defect, lack of sound manufacturing, and use of a design without reliability consideration. design for manufacturability (dfm), design for assembly (dfa), design for testability (dft), and so on, are prerequisite to assure the reliability of the product. only a design for reliability (dfr) can assure that a manufactured product with an acceptable quality will also be reliable in the product application. the elements of the system reliability are schematically shown in fig. 6-1, and they are comprised of device/package/pcb and interconnections and also include consideration of design for reliability prior to assembly and subsequent manufacturing and quality assurance implementation. in general, both statistical and probabilistic modeling approaches are considered in reliability methodology. statistical approaches are employed after testing, whereas probabilistic predictive modeling is employed at the product design (dfr). 586 r. ghaffarian fig. 6-1 three key elements define reliability under thermal stress are due to global, local, and solder alloy coefficient of thermal (cte) mismatches. mathematically, the reliability of an object at time t can be stated as [6] r(t) = 1 – f(t) where r(t) is the reliability at time t (i.e., the proportion of parts still functioning), and f(t) is the fraction of the parts or systems that have failed at time t. time may be measured in calendar units or some other measure of service time such as on/off cycles or thermal or mechanical vibration cycles. the unit of time that makes sense depends on the failure mechanism. when several failure modes are present, it is often helpful to think in terms of several time scales. a plot of the failure rate of a product as a function of time typically takes the shape of a ―bathtub‖ curve (see fig. 6-2). this curve illustrates the three phases that occur during the lifespan of a product from a reliability perspective. in the first, infant mortality phase, there is an initially high but rapidly declining failure rate caused by infant mortality. infant mortality is typically caused by manufacturing defects that went undetected during inspection and testing and lead to rapid failure in service. burn-in can be used to remove these units before shipment. the second phase, the normal operating life of the product, is characterized by a period of stable, relatively low failure rates. during the operating life, failures occur apparently randomly, and the failure rate r is roughly constant with time. an exponential life distribution is often assumed to describe the behavior in this region. during the third phase, the wear-out period, the failure rate increases gradually due to wear-out phenomena until 100 percent of the units have failed. for some systems, the second steady-state region may not exist; for package, pcb pths/microvias, and solder joints; the wear-out region may extend over most of the life of the assembly. most wear-out phenomena can be characterized by cumulative failure distributions governed by either the weibull or the log-normal distribution. weibull distributions have been successfully used to describe solder-joint and pcb plated-through-hole fatigue distributions, while log-normal distributions are generally associated with electrochemical failure mechanisms. while these distributions may be quite narrow in some cases, their use should serve as a reminder that even with nominally identical samples, failures will be statistically distributed over time. a practical use of fitting a distribution to reliability data is to extrapolate to smaller failure rates or other environmental conditions. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 587 fig. 6.2 classic bathtub reliability curve showing the three stages during the life of a product from a reliability perspective: infant mortality, steady-state, and wear-out. numerous simulation approaches have been proposed to project failure distribution and reliability. for example, in 2000, john w. evans, et al., presented a physics of failure based approach for virtual qualification of advanced area array assemblies, against solder fatigue failure [49]. specifically, monte-carlo simulation to evaluate solder joint fatigue distribution, given material property variations and manufacturing capability. simulation results were compared to data accumulated from two test environments and two bga product types. fig. 6-3 virtual qualification process by monte carlo simulation 588 r. ghaffarian for the thermal cycle to failure data in the range of 0c to 100°c, the simulation data were very representative of the actual test data. the 2-p (2-parameter) weibull plots clearly showed the curvature in both the actual and simulated test data. when the 3-p weibull plots were generated (see fig. 6-4), the simulation and the actual test data were closely matched. fig. 6-4 3-p weibull plots of simulation and actual test data for the 0/100c thermal cycle condition. for the second thermal cycle test data in the range of –30°c to 100°c, simulations and actual data did not compare well. the 3-p weibull shape parameter for the simulation and actual data were dramatically different. the difference explained by the fact that the solder joint reliability model used did not represent the process of failure for lower temperature. the –30°c to 100°c qualification temperature range exceeds the envelope of the model application. the authors concluded that monte carlo simulation is a valuable tool for implementation into a virtual qualification test scheme for electronic devices and assemblies. it is compatible with proper physics of failure assessment, while providing advantages of properly treating uncertainty. in addition, much more information is available about the process of failure, from a monte carlo simulation. in a recently published paper, february 2016, hyunseok oh, et al., agreed that among the analyses methods for solder joints, the conventional monte carlo simulation technique (random sampling) usually offers the most accurate results [50]. however, they conjecture that the computational cost becomes prohibitive for engineering problems with large computation requirement. they presented a table that compared the strength and weakness of four computational simulation methods including surface approximation technique that also reduces computational time. they proposed eigenvector dimension-reduction (edr) simulation method to improve computational efficiency without accuracy penalty while reducing computational cost. as an example, the technique demonstrated to predict solder joint fatigue reliability of chip resistor assemblies. two uncertainties were considered; one for solder joint height and the other one for chamber temperature. when key uncertainty parameters were defined, the simulation method was expand to project assembly reliability of solder joints under a field condition for a mobile device. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 589 6.2. prognostic methodologies fig. 6-5 compares conventional reliability prediction approaches to prognostic methodologies that is used to predict remaining useful life (rul) [51-57]. conventional reliability methodologies focuses on analysis of failure data from the field with assumption of inherent constant failure rate. these methods tailor parameters such as quality, operating, and environmental conditions to reduce failures and improve reliability. on the other hand, prognostic methodologies predict the future performance of a package and assembly by assessing the extent of deviation or degradation of a system from its expected normal operating conditions. prognostics emphasizes on predicting the time at which a system or a component will no longer perform its intended function. this lack of performance is most often a failure beyond which the system can no longer be used to meet desired performance. the predicted time then becomes the rul, which is an important concept in decision making for contingency mitigation. the science of prognostics is based on the analysis of failure modes, detection of early signs of wear and aging, and fault conditions. fig. 6-5 comparison of conventional reliability prediction methods to prognostic approaches that predict remaining useful life (rul) an effective prognostics solution is implemented when there is sound knowledge of the failure mechanisms that are likely to cause the degradations leading to eventual failures in the system. it is therefore necessary to have initial information on the possible 590 r. ghaffarian failures (including the site, mode, cause and mechanism) in a product. such knowledge is important to identify the system parameters that are to be monitored. potential uses for prognostics is in condition-based maintenance. the discipline that links studies of failure mechanisms to system lifecycle management is often referred to as prognostics and health management (phm)— significant publications in microelectronics within the last decade. other nomenclatures includes system (structural) health management (shm). simply, phm is the process of monitoring the health of a product and predicting the remaining useful life. the benefits of phm include: (1) providing advance warning of failures; (2) minimizing unscheduled maintenance, extending maintenance cycles, and maintaining effectiveness through timely repair actions; (3) reducing the life cycle cost of equipment by decreasing inspection costs, downtime, and inventory; and (4) improving qualification and assisting in the design and logistical support of fielded and future systems. technical approaches to building models in prognostics can be categorized into data-driven, physics-based, and hybrid approaches. data-driven approaches use information from previously collected data (training data) to identify the characteristics of the currently measured damage state and to predict the future trend. the data-driven method that does not use any particular physical model is powerful in predicting near-future behaviors, whereas the physics-based method has advantages in predicting long-term performance of the system by identifying model parameters. since generally solder joint failure under thermal and mechanical cycling is a fatigue phenomenon with damage progression, the physics-based method is a more appropriate than data-driven approach. in the physics-based method, model parameter estimation has a great effect on evaluating the system‘s health status and predicting the rul. so, the key differences between the two methods includes: (1) availability of a physical model and (2) use of training data to identify the characteristics of the damage state. hybrid approaches combine the two to improve prediction for the performance. literature provides a wealth of papers on the phm subject, but generally the simulation model proposed is specific and lack simplification needed for wider use. a recent paper on this topic addresses this weakness by proposing physics-based model using a three-step concept (tsc) for projecting reliability of microelectronics [58]. the first step involves the use of the classical statistical bayes‘ formula, a diagnostics tool. it identifies, on the probabilistic basis, the faulty (malfunctioning) device(s) from the signals (‗‗symptoms of faults‘‘). then, physics-of-failure-based boltzmann–arrhenius–zhurkov‘s (baz) model was used to estimate the remaining useful life (rul). if the rul is not long-enough, restoration of the faulty device becomes necessary. the restored device is then put back into operation (testing), provided its failure-free probability of operation is found to be satisfactory. if the operational failure nonetheless occurs, the third, technical diagnostics step needed to update reliability. statistical beta-distribution, in which the probability of failure is treated as a random variable, is suggested to be used at this step. the data-driven methods are categorized into two key methods: (1) the artificial intelligence that includes neural network (ann) and fuzzy logic and (2) the statistical methods that includes gaussian process (gp) regression, least square regression, and hidden markov model. in the following section, i present an ann methodology that was developed to project cycles-to-failures for assemblies of bga and cbgas. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 591 7. artificial neural networks for cga assembly reliability projections 7.1. ann background artificial neural networks (ann)  or simply neural networks  are information processing systems emulating some of the processing characteristics of the human brain [59]. much like its biological counterpart, an artificial neural network consists of a large number of densely interconnected simple processing elements. this brain-like organization imparts to the neural network parallel processing and learning capabilities. the above characteristics make the neural networks useful for tasks that are either impossible or very difficult to accomplish using traditional computer programs. these tasks include:  pattern recognition: recognition and separation of patterns contained in data  prediction: determination of a value of a variable from a set of given values  conceptualization: determination of conceptual relationships within data sets  filtering: smoothing a noisy signal  optimization: determination of the optimal values from a set of given values all of the above functions are accomplished by simply altering the arrangement and number of processing elements. most neural networks, like the human brain, require iterative feedback training. training can be either supervised or unsupervised. in supervised training, the network is provided a set of input-correct output pairs to train on. unsupervised training means only input data with some guidelines are given. in general, prediction requires supervised training, while classification, conceptualization, filtering, and optimization can employ unsupervised training. neural networks have two main components: the processing elements and the connections between them. the processing elements  sometimes called neurons, units, cells, or nodes  function as information processors; the connections function as information storage. fig. 7-1 shows a diagram of a processing element with connections going in and out of it. fig. 7-1 schematic of an ann structure each processing element performs two distinct functions. first it calculates a weighted sum of the input signals, and then it applies a transfer function to this sum and outputs the result. transfer functions are generally nonlinear since nonlinear functions are required to solve nonlinear problems. nodes within a network are arranged in layers. the neural network 592 r. ghaffarian shown in fig. 7-2 consists of an input layer, a hidden or processing layer, and an output layer. the initial data enters the network through the input layer. most of the processing takes place in the hidden layer. if the complexity of a given problem is high, more hidden layers may be required. finally, the output layer yields the desired information. fig. 7-2 schematic of a simple ann structure with a one hidden layer 7.2. backpropagation a number of neuromophic learning paradigms have been reported in the literature. the majority of these are supervised learning techniques including the error backpropagation (ebp) learning algorithm. the name ―backpropagation‖ comes from the training method used during the learning process—back propagation of error. this training method is simply a gradient descent method that minimizes the total squared error of the output computed by the net. the very general nature of the backpropagation training method means that a backpropagation net can be used to solve problems in many areas. in real world applications, ebp often suffers convergence problems. a new learning algorithm technique called cascade correlation (cc) has shown encouraging results. both empirical and mathematical results has been validated [60] for a more general algorithm of cascade error projection (cep), of which cascade correlation is a special case. cep is a simple learning method using a one-layer perception approach followed by a deterministic calculation for another layer. 7.2.1. cascade error projection (cep) fig. 7-3 shows the cep neural network architecture [60], which shaded squares and circles indicate frozen weights; a square indicates calculated weights and a circle indicates learned weights. the shaded circles or squares indicate either the learned or calculated weight set that is computed and frozen. a circle indicates that perceptron learning is applied to obtain the weight set, and a square indicates that the weight set is deterministically calculated. in the following a brief summary of mathematical approach for cep is provided. the energy function is defined as: 2 1 1 1 { ( 1) ( ) ' } p m p p p p h o o o p o f n t o f m      microelectronics packaging technology roadmaps, assembly reliability, and prognostics 593 fig. 7-3 the architecture of cep includes inputs, hidden units, and output units the weight update between the inputs (including previously added hidden units) and the newly added hidden unit is calculated as follows: p p ih p ih w w      (a) and the weight update between hidden unit n+1 and the output unit o is 1 2 1 ' ( 1) [ ' ( 1)] p p p p o o h p ho p p p o h p f f n w f f n         (b) with 1 ( ) 1 x x e f x e      m is the number of outputs, p is the number of training patterns. error ( )p p p o o ot o n   ; where ( )p oo n is the output element o of the actual output o(n) for training pattern p, and to p is the target element o for training pattern p. n indicates the number of previously added hidden units. 594 r. ghaffarian ' ( ) 'p p o of n f denotes the output transfer function derivative with respect to its input. ( 1)p hf n denotes the transfer function of hidden unit n+1. the cep algorithm is processed in two steps:  single perceptron learning which is governed by equation (a) to update the weight vector wih(n+1)  when the single perceptron learning is completed, the weight set who(n+1) can be obtained by the calculation governed by equation (b). 7.3. artificial neural network (ann) approach neural networks are much more than gathering a set of raw data and feeding it directly to a modeling algorithm. success requires a sequence of coordinated steps. the process of developing neural networks to predict reliability of advanced electronic follows the sequential steps of: (1) identification, (2) transformation, (3) model, (4) analysis, and (5) prediction. these steps are further analyzed in the following sections. 7.3.1. identification identification and characterization of the data are a critical step in the modeling process because the results are so dependent on the quality and selectivity of the input parameters. the first priority is to determine what data will be used to build the models (―training‖ data), and determine how well the chosen model works (―validation‖ data). when testing the effectivity of the models, it is extremely important to have an independent data set that contains examples that were not used to train the models, and that is why a portion of the data (randomly selected) is set aside for validation. this verifies the ability of the models to work well on new, unseen data, as they must when they are implemented for actual reliability prediction. once the data set has been identified, it is necessary to determine which of the data fields will be used for predictors (inputs) and which parameter will be predicted (output). the inputs are sometimes called independent variables, and the output the dependent variable since its value is driven by the values of the other fields. the format of the output variable will directly affect which modeling approach is used. new input variables can be created from existing variables to create more powerful modeling. the raw data often are not ready to be modeled because of data inadequacies. some of the common problems encountered with data for the ann modeling are format, feature, null, data distribution, outliers, difference between validation and training data, etc. most neural networks deal with numerical fields and data in text or other format need be translated in numerical values. for example, ―yes‖ or ―no‖ have to be changed to 1‘s and 0‘s. if needed, data distribution needs to be modified for different distributions within a data set or exclusion of outliers prior to their use in the data set. 7.3.2. transformation properly representing and transforming data can make the difference between success and failure in the modeling process. there are several different approaches to coding and representing data so that certain characteristics are more obvious to the subsequent modeling algorithm. these include data coding, data sampling, feature extraction, etc. symbolic data need to be converted to numeric, e.g., temperature (very cold, cold, room temperature, warm, microelectronics packaging technology roadmaps, assembly reliability, and prognostics 595 and hot) and many types of ratings (excellent, good, fair, poor). for these cases, an integer value can be simply assigned to the original symbolic values, such as excellent = 4, good = 3, and so forth. 7.3.3. modeling once the data have been preprocessed and placed into the proper formats, they are ready to be mined for information. the neural networks models are trained to classify or estimate outputs. several different mining schemes should be evaluated to determine which neural networks provide the best performance for the given type of data. the model step consists of defining neural networks for the selected problem type. this involves:  designating the inputs and the outputs to the model  identifying the training and validation sets  selecting the mining strategies, as well as the modeling parameters  executing the resulting model  analyzing the resulting models  applying the best mining strategy to subsequent data 7.3.4. analysis when analyzing the modeling results, it is very important that the performance of any model be determined with data that were not for training. testing models on unseen data more closely represents the manner in which the model will be used in practice (i.e., on data that were not used for training) and is therefore a more realistic evaluation approach. after modeling, error statistics should be calculated to determine a comparison measure of how well each model is working. the error statistics are calculated by subtracting the model estimate from the actual value of the output to determine the error for each sample. then, aggregate statistics can be calculated that describe how well the model performed on the data sets. errors calculation should include average absolute error, maximum absolute error, standard deviation, and coefficient of determination. for example, the overall absolute error provides an average of absolute error for each sample, a measure of the overall goodness of the model. standard deviation measures variance of the error. the larger the variance, the less consistent the model is in overall ranges of values. 7.4. ann verification for bga reliability as stated previously, the first step in an ann modeling is how well the model works using an independent validation data set and then build the model based on training data. the cep algorithm with 3-cascaded hidden layers was validated first using theoretical modeling of cycles-to-failure data gathered for bga [61]. three thousands (3,000) iterations for each neutron were utilized to minimize error associated with the model. 7.4.1. backpropagation ann model for reliability projection of bga a taguchi l27 design of experiment (doe) was used to mode the effect of four key bga variables, at 3 levels each that affect solder attachment reliability when subjected to thermal cycling [61]. the variables included the bga pad diameter, ball diameter, weight 596 r. ghaffarian per solder joint, and applied displacement. no interaction between displacement and the other three variables was assumed; allowing use of fractional factorial reduced analysis time and cost. the shear deformation was assumed to be due to a 20-minute thermal cycle in the range of 0-100°c with 5 minutes ramps and dwells. thermomechanical properties as well as surface tension for eutectic solder alloy, 63sn/37pb, were considered in finite element analysis. the inelastic energy required for empirical projection of solder joint fatigue life was calculated. fatigue life projections based on one method show that it is inversely proportional to the maximum inelastic energy density with an index of one; the index was two for the average energy rate of change per cycle. the coffin-manson relation has an index of approximately two. so, it became apparent that the fatigue life is inversely related to the inelastic energy to within a proportionality constant. table 7-1 lists taguchi runs, modeling results, and projection using darveaux‘s model [62] adapted from tables 1.2, and 5 of reference [61]. the table was sorted based on cycles-to-failure data from low-to-high to reveal the key variables. the assemblies with highest deformation level and the smallest ball diameter show the lowest cycles-to-failure. those with the least deformation and the largest ball diameter show the highest cycles-to-failure. weight and pad diameter in combination with ball diameter and deformation level cover the mid range failures. table 7-1 reliability of pbga assembly modeled using four variables (adapted from reference 61) run pad diameter microns ball diameter microns weight per solder joint (mg) applied displacement microns darveux 3 0.5 254 1016 12.5 47 11 2.55 254 635 12.5 62 19 5 254 254 12.5 72 2 0.5 254 635 8.75 116 10 2.55 254 254 8.75 135 21 5 254 1016 8.75 160 5 0.5 508 635 12.5 239 24 5 508 1016 12.5 288 13 2.55 508 254 12.5 376 4 0.5 508 254 8.75 564 1 0.5 254 254 5 634 7 0.5 762 254 12.5 642 15 2.55 508 1016 8.75 686 23 5 508 635 8.75 749 18 2.55 762 1016 12.5 759 26 5 762 635 12.5 961 9 0.5 762 1016 8.75 1088 12 2.55 254 1016 5 1305 17 2.55 762 635 8.75 1631 25 5 762 254 8.75 1919 6 0.5 508 1016 5 1927 20 5 254 635 5 1970 22 5 508 254 5 2338 14 2.55 508 635 5 2424 8 0.5 762 635 5 3461 27 5 762 1016 5 4165 16 2.55 762 254 5 4241 microelectronics packaging technology roadmaps, assembly reliability, and prognostics 597 it was suggested that a model was required to quickly estimate fatigue life for any set of input parameters. a linear regression could be used for such a model. however, the disadvantage of a linear regression model is that the form of the model must be assumed a priori, and an inaccurate form of the regression model will lead to inaccuracies in the output. ann was considered for projection since this modeling technique does not require the form of the data to be assumed a priori. a backpropagation ann technique was used for this purpose. out of the 27 experiment runs, 18 were used for training the network and 9 were used for testing the network an additional 12 test units were used to further extensively validate the neural model. the least error in the ann results occurred for darveux‘s model based on the differences between projection and actual test data. however, higher error values obtained for the inverse estimate of maximum inelastic energy. 7.4.2. ann cep training data error compare to literature prior to proceeding with the cep ann model, the error results from this model with 3-hidden layers and 3,000 iterations were compared to those presented previously employing a backpropagation model. projections were made on bga fatigue life. fig. 74 shows a comparison between the target cycles-to-failure and actual projection based on cep. the training of the cep ann model progressed smoothly which led naturally to the next step. the knowledge of network training data, then, was captured as nonlinear function of parameterized weight component and neural transfer function. as knowledge captured in training, we tested the network with the new set of data consisting of 12 input data (table 4, reference 61). its prediction is shown in fig. 7-5. fig. 7-4 the target (+) and actual learning data using cep ann modeling 0 5 10 15 20 25 30 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 target (+) and actual output data from training phase number of training patterns 598 r. ghaffarian fig. 7-5 cycles-to-failure (+) and prediction using ann cep algorithm to compare cep ann modeling projection against the backpropagation technique presented in the literature, for both modeling efforts, the differences between calculated and prediction were calculated for the 12 data set. results are shown in fig. 7-6. fig. 7-6 the difference between calculated and prediction using either cep (+) or backpropagation anns 0 2 4 6 8 10 12 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 nf calculated darveaux"s model (+) and predicted from ann-test phase number of testing patterns 0 2 4 6 8 10 12 0 10 20 30 40 50 60 % difference from cep (+) and bp neural networks-test phase number of testing patterns microelectronics packaging technology roadmaps, assembly reliability, and prognostics 599 again, it is apparent that the cep algorithm provides a better prediction than the backpropagation ann used in the literature for the given data set. moreover, one of the key advantages of cep is that it is not required to know the prior number of hidden units. this feature will save time for learning and therefore requires much less calculation time and simple calculation steps when compared to the backpropagation ann. 7.5. ann cep for cbga reliability subsequent to validation of cep ann using literature data for bga life cycle, this technique was employed to project the cycles-to-failure data set for a ceramic bga with 625 i/os. fig. 7-7 shows cycles to first failures for cbga625 under four different thermal cycling conditions [63]. these plots were generated by ranking cycles-to-failures from low to high and then approximating the failure distribution percentiles using a median plotting position, fi = (i-0.3)/(n+0.4). fig. 7-7 cycles-to-failure for cbga 625 assemblies under different cycling conditions the data set presented in fig. 7-8 consists of 53 data points and each point included 3 elements: cumulative probability percentage, temperature cycle range (t), and ramp rate (thermal cycle versus near thermal shock). the output was cycles-to-failure. forty two (42) data points out of 53 were considered for training (input and output sets) and the remaining 12 data points used for testing. the top plots (see fig. 7-8) show learning results with the green line being the target for training data set and the blue line as the network learned. the lower plots show unlearned data set (blue line) following the green line as the target data set. the error points from the two are marked by asterisk (*) indicating low error values and relatively constancy for the data set. 600 r. ghaffarian fig. 7-8 training and testing performance fig. 7-9 and 7-10 provide training and projection for data set for cbga performed in the range of 0-100°c [64]. the figures include plots of the actual, projection, and error for the data set. again, low errors in values indicate applicability of the cep ann model for projection. fig. 7-9 training and testing performance (0-100°c range) 0 5 10 15 20 25 30 35 40 45 -200 0 200 400 600 training performance 1 2 3 4 5 6 7 8 9 10 11 -200 0 200 400 600 testing performance 0 5 10 15 20 25 30 35 40 45 -1 -0.5 0 0.5 1 the training phase 1 2 3 4 5 6 7 8 9 10 11 -1 -0.5 0 0.5 1 the testing phase microelectronics packaging technology roadmaps, assembly reliability, and prognostics 601 fig. 7-10 target (green) and actual data (blue) 7.5.1. interpolationcep ann and ctfs vs t for cbga fig. 7-11 shows cycles-to-failure projections at three probability levels versus temperature ranges. the full data set (53 data points) previously reported for training and testing of the network was considered in generating these plots. the temperature ranges varied between 0100°c (t = 100) to –55/125°c (t = 180). no attempt was made at this stage of modeling to project data beyond the test boundary. cumulative probability failures for 0.1, 0.5, and 0.9 were shown to represent a range of failure probability. interpolation within the boundaries are well represented, and data trends are as expected. 0 10 20 30 40 50 60 100 150 200 250 300 350 400 450 500 550 fig. 7-11 predictions of cycles-to-failures at 10% (o), 50%(*), and 90% (+). 10 2 10 3 10 2 10 3 deltat in log scale c y c le s e s ti m a ti o n i n l o g s c a le estimation results with o (p=0.1), * (p=0.5), and + (p=0.9) curves 602 r. ghaffarian 7.5.2. extrapolationcep ann and ctfs vs t for cbga extrapolation of data beyond the provided thermal cycle regime is desirable. extrapolation capability was tested using cep ann for projection. fig. 7-12 shows cycles-to-failure for a lower t is compared to plots shown in the previous figure. to improve the projection for lower t, 8 ctf data points in the range of 0-100°c were added [64]. fig. 7-13 provides more details, especially in the area of extrapolation. it is apparent that a reduction in cycles-tofailure leads to a very slow decrease rate. this is in contrast with the coffin-manson extrapolation projection. in addition, failures for the three levels of probability failures converged to a single point, possibly due to inaccuracy in extrapolation. fig. 7-12 log-log plot of projected cycles-to-failures versus temperature cycle range fig. 7-13 log-log plot of cycles-to-failure versus temperature range 10 1 10 2 10 2 10 3 10 4 loglog plot for cycle prediction with 1% (+), 50% (*), and 90% (o) failures n # o f c y c le s deltat 10 2 10 3 loglog plot for cycle prediction with 1% (+), 50% (*), and 90% (o) failures n # o f c y c le s deltat microelectronics packaging technology roadmaps, assembly reliability, and prognostics 603 8. summary for five decades, the semiconductor industry has distinguished itself from other industries by continuously shrinking ics enabling functional improvement—moore‘s law—and developing miniaturized electronics products at lower cost. the next shrinkage is packaging technology. packaging shrinkage is enabled by using flip-chip ball grid array (fcbga), through silicon via (tsv) interconnections, tsv-less interposers, and 3d tsv stacking technologies as well as packaging die at wafer level using fan-in/fan-out configurations. a few key points on packaging trends discussed in this paper are summarized below.  moore‘s law has been kept alive since 2000s by various technical costly methods. at 90 nm, stain silicon was introduced, at 45 nm, new materials layered on the silicon, at 22 nm, tri-gate transistors invented, and at 14 nm, a new photolithograph process was developed to create finer feature requirements. it is unclear as how much further scaling is possible since at 2 nm, transistor would be just 10 atoms wide, and it is unlikely that they will operate reliability at such a small scale.  the itrs projects that by 2020–2025, system integration or ―more than moore‖ become the new option for miniaturization by utilizing the vertical dimension, i.e., a 3d approach. the inemi team predicts a moderate growth for qfp/lcc and chip-onboard (cob) whereas a significant growth both for qfn and wlp packaging technologies. others project high-volume adoption of fan-out wlp, 2.5d/3d, and evolution and growth of fan-in wlp and flip chip. fan-in and fan-out wlp act as complementary, rather than competing, technologies. the inemi projects a decline in conventional dip leaded package as well wire-bonded die bga with conventional pitch, whereas a moderate increase for wire-bonded die of finer pitch bgas. significant increases are projected for flip chip fpga as well as stack packaging technologies.  the inemi team also identified the new packaging technologies: (1) wafer level packaging (wlp) and bonding, (2) system in package (sip), (3) printed electronics, (4) direct bonding interconnect, (5) new conductive and dielectric materials, and (6) 3d integration.  the qfn packaging technologies show moderate growth. these are new categories of packages—leadless; which have no balls or columns for interconnection, they use only solder. ipc designate them as bottom-termination components (btcs); other designated names in literature include dual-row/multi-row qfn (drqfn/mrqfn), dual flat no-lead (dfn), and land grid array (lga) packages.  more than 1000 i/o ceramic cgas are now offered by package suppliers for highreliability applications. a new class of package – class ywas added to the specification, mil-prf-38535, revision k in order to cover high i/o cga use. key packaging trends for high-reliability applications identified as: (1) ceramic quad flat pack (cqfp) to area array packages, (2) cbga to ccga/cga (>500 i/os) and land grid array (lga), (3) wire-bond to flip-chip die within a package, (4) hermetic to non-hermetic packages (>1000 i/os), (5) high-lead solder columns to columns with cu wrap , (6) pb-sn to pb-free, including potential use of a cu column, and (7) land grid with conductive interconnects rather than pb-free solder  for high density packaging, the migration to 3d using conventional interconnection method has become mainstream. currently, 3d packaging consists of stacking of packaged devices, called package-on-package (pop), stacking of die within a package 604 r. ghaffarian called package-in-package (pip), or stacked wire-bonded die (primarily memory). the pop packaging technologies were categorized in three styles: (1) pop with center mold and flip chip, (2) pop with partial cavity structure, and (3) through-mold via (tmv™).  the 2.5d packaging technology had significant growth since it is considered to be an interim solution until challenges associated with the 3d tsv technology implementation are resolved. the 2.5d packaging (tvs-less)—active on passive-with tsv silicon interposer—implemented by an fpga manufacturer (slit, silicon-less interconnect technology) transitioning finer pitch die with 28 nm technology to coarser 65 nm technology. another high volume package supplier introduced the 2.5d emib technology that uses silicon bridges in a laminate to take advantage of higher functionality and lower cost. other tvs-less interposers include: slim, silicon interposer-less integrated module, i-thop, integrated thin-film high density organic package, and tsh, through silicon hole.  embedded components are defined as a passive/active discrete/devices that are placed or formed on inner layers of substrate/board. embedded passives within board is near maturing whereas new classes of integrated passive devices within package are continue to emerge. two different approaches of component assembly are used: face up and face down. the face-up technology, because of its better heat dissipation characteristic, is widely used for various embedded active including power-mosfet, igbt, and diodes.  printed electronic technology (pet) is complementary to silicon chip technology, which industry continues to find special applications for, with significant cost per area and throughput benefits. it is forecasted that the pet market will outpace silicon chip electronics because of its ubiquity.  in recent years, mems/moems packaging is driven by consumer products posing new lower cost requirement, larger volume implementation, and standardization approaches for applications. previously, the technology was employed for automotive and high-reliability applications, so, emphasis was placed on reliability. these technologies use both conventional packages such as to and butterfly styles as well as advanced 3d stacking technologies such as btcs.  rf packaging trends were illustrated from mature to emerging technologies. for rf systems, micro-miniaturization and system integration on silicon, system on chip and system-in-package are key enabling technologies. the trends for multichip packaging technology were also illustrated showing that dc-dc converters in conventional hermetic packages are still in use in high-reliability applications. new miniaturized multi-chip package is emerging. new materials are needed for further microelectronics miniaturization. changes in materials include rohs implementation (tin-lead to pb-free) with proliferation of alloys to cu pillar for fc and low dielectric to new package underfill materials. the packaging technology trends were concluded with defining hierarchical ranking covering die, device, package, and system levels. the traditional hierarchy of packaging technologies is growing into ambiguity with emerging microelectronics including those with movable/sensing parts such as mems and moems.  package, pcb, and assembly are the three key elements affecting reliability under thermal stresses. these elements with the use thermal conditions, the design life, and acceptance failure probability determine the subsystem reliability. wear-out failure phenomena can be characterized by cumulative failure distributions using either the weibull or the log-normal distribution. microelectronics packaging technology roadmaps, assembly reliability, and prognostics 605  monte-carlo method was used to simulate solder joint fatigue distribution including material property variations and manufacturing capability. it was shown that risk projected based on 2and 3-parameter weibull distributions was different and needs to be considered, especially for high-performance applications. also, it was shown that the risk based on log-normal distribution is less conservative than the risk from weibull, i.e. log-normal projects higher cycles-to-failure.  we compared conventional reliability prediction approaches to prognostic methodologies that predict remaining useful life (rul). conventional approaches focus on analysis of failure data from the field with assumption of inherent constant failure rate; whereas prognostics place emphasis on predicting the time at which a system or a component will no longer perform its intended function. the predicted time then becomes the remaining useful life (rul), which is an important concept in decision making for contingency mitigation. the science of prognostics is based on the analysis of failure modes, detection of early signs of wear and aging, and fault conditions.  the prognostic data-driven methods were categorized into two key methods: (1) the artificial intelligence including neural network (ann) and fuzzy logic and (2) the statistical methods including gaussian process (gp) regression, least square regression, and hidden markov model. test results for bga was used to compare backpropagation ann and the cascade error projection (cep) ann algorithm. cep ann showed better prediction than backpropagation ann.  cep ann method also employed to project the cycles-to-failure for a ceramic bga with 625 balls. training was based on four sets of thermal cycle test data covering thermal profiles of 0°/100°c, –35°/100°c, –55°/100°c, and –55°/125°c. within δt test boundaries, ann projections for cycles-to-failure were excellent; however, projections for cycles-to-failure were poor for outside of the test results‘ envelop. 9. acronyms and abbreviations 2d two dimensional 2.5d pseudo 3d with passive interposer 3d three dimensional ann artificial neural network aqfn advanced quad flat no-lead asic application-specific integrated circuit bga ball grid array bsi back-side illuminate btc bottom termination component cbga ceramic ball-grid array ccd charge coupled device ccga ceramic column grid array cep cascade error projection cis cmos imaging sensor cga column grid array cmos complementary metal oxide semiconductor cob chip-on-board 606 r. ghaffarian cots commercial-off-the shelf cpu central processing unit cqfp ceramic quad flat pack csp chip scale package cte coefficient of thermal expansion dil dual in line dfn dual flat no-lead (package) dmd digital micromirror devices doe design of experiment drie deep reactive ion etching drqfn dual-row quad flat no-lead emib embedded multi-die interconnect bridge eda electronic design automation ems electronics manufacturing services esl equivalent series inductance ewlb embedded wafer level ball grid array fcbga flip-chip ball grid array fcob flip chip on board fc flip-chip fcbga flip-chip ball grid array fcip flip-chip in package fcob flip chip on board fli first level interconnect fowlp fan-out wafer level package fpbga fine pitch ball grid array gpu graphics processing unit hbm high bandwidth memory hdtv high definition television hvm high volume manufacturing ic integrated circuit i/o input/output iot internet of things ieee institute of electrical and electronics engineers igbt insulated gate bipolar transistor [?] inemi international electronics manufacturing initiative ipc (association connecting electronics industries) ipd integrated passive devices itrs international technology research society jic jisso international council jisso japanese acronym for a total solution for interconnecting, assembling, packaging, mounting, and integrating system design jpl jet propulsion laboratory kgd known good die lcc leadless chip carrier lcp liquid crystal polymer led light emitting diode lga land grid array microelectronics packaging technology roadmaps, assembly reliability, and prognostics 607 mbd micro-bumped die mcp multi-chip package mems micro-electro-mechanical systems mlf micro lead frame moem micro-opto-mechanical systems mosfet metal oxide field effect transistor mpp multi package on pcb mrqfn multi-row quad flat no-lead mst microsystems technology mtm more than moore nasa national aeronautics and space administration nepp nasa electronic parts program odm original design manufacturer oe-a organic electronics association oem original equipment manufacturer oled organic light emitting diode opv organic photovoltaic otft organic thin film transistor pbga plastic ball grid array pcb printed circuit board pe/oe printed electronics/organic electronics pet printed electronics technology pga pin grid array phm prognostic health monitoring pidtp package integrity demonstration test plan pip package-in-package pop package-on-package pup package under package pwb printed wiring board qfn quad flat no-lead qfp quad flat pack qml qualified manufacturer list r2r roll to roll rcc resin-coated copper rdl redistribution layer rf radio frequency rfid radio frequency identification rohs (european union) restriction of hazardous substances rul remaining useful life sem scanning electron microscope sia semiconductor industry association sip system in package smd surface mount device smt surface mount technology soc small outline chip ssi stacked silicon interconnect tft thin film transistor 608 r. ghaffarian tmv through mold via to transistor outline tpv through-package via tqfn thin quad flat no-lead tsh through-silicon hole tsop thin small outline package tsv through silicon via twg technology working groups tv test vehicle uson ultra-thin-small-outline vdma verband deutscher maschinen und anlagenbau (german engineering federation) vqfn very thin quad flat no-lead wcsp wafer level chip scale package wfop wide strip fan-out package wlcsmp wafer-level chip scale module package wlcsp wafer-level chip-scale packaging wlp wafer level package acknowledgments: the research described in this publication is being conducted at the jet propulsion laboratory, california institute of technology, under a contract with the national aeronautics and space administration. copyright 2016 california institute of technology. u.s. government sponsorship acknowledged. the author would like to acknowledge jpl’s colleague support, especially dr. david gerke for his support on the roadmap survey and also appreciate dr. tuan duong for performing the neural network modeling analysis during tenure at jpl. the author extends his appreciation to program managers of the national aeronautics and space administration electronics parts and packaging (nepp) program, including dr. john evans, michael sampson, and ken label for their continuous support and encouragement. references [1] international technology roadmap for semiconductors, itrs (web page), http://www.itrs.net/, accessed june, 2013. [2] international electronics manufacturing initiatives (web page), inemi, http://www.inemi.org/2013roadmap, accessed june, 2013. [3] ipc, association connecting electronics industry (web page), http://www.ipc.org, accessed june, 2013. [4] oea, organic and printed electronics association (website), http://www.oe-a.org/en_gb/, accessed june, 2013. [5] r. ghaffarian, "update on cga packages for space applications," microelectronics reliability, 2016. [6] r. ghaffarian, ―reliability of printed circuit boards,‖ chapter 60 in printed circuit handbook, 7th ed., editor-in-chief, coombs, c. f., mcgraw-hill, new york, 2016. [7] r. ghaffarian, ―damage and failures of cga/bga assemblies under thermal cycling and dynamic loadings,‖ in proc. of the asme 2013 international mechanical engineering congress and engineering. imece2013, november 15-21, san diego, california. [8] r. ghaffarian, ―thermal cycle and vibration/drop reliability of area array package assemblies,‖ chapter 22 in structural dynamics of electronics and photonic systems, eds. e. suhir, e. connally, and d. steinberg springer, 2011. http://www.itrs.net/ http://www.inemi.org/2013-roadmap http://www.inemi.org/2013-roadmap http://www.ipc.org/ http://www.oe-a.org/en_gb/ microelectronics packaging technology roadmaps, assembly reliability, and prognostics 609 [9] r. ghaffarian, ―thermal cycle reliability and failure mechanisms of ccga and pbga assemblies with and without corner staking,‖ ieee transactions on components and packaging technologies, vol. 31, issue 2, june 2008. [10] r. ghaffarian, ―area array technology for high reliability applications,‖ chapter 16 in micro-and opto-electronic materials and structures: physics, mechanics, design, reliability, packaging, ed. e. suhir, springer, 2006. [11] r. ghaffarian, ―bga assembly reliability,‖ chapter 20 in area array packaging handbook, ed. k. gilleo, mcgraw-hill, 2002. [12] j. fjelstad, r. ghaffarian, and y. g. kim, chip scale packaging for modern electronics, electrochemical publications, 2003 [13] s. agarwal, ―class y, a new class of space microcircuits,‖ nasa eee parts bulletin, vol. 5, issue 4, august/december 2013, (web page), https://sma.nasa.gov/documents/default-source/defaultfilelibrary/ newsfeed-eee-partsbulletin-augdec2013.pdf?sfvrsn=0 [14] j.h. lau, ―patent issues of fan-out wafer/panel-level packaging,‖ chip scale review, nov-dec 2015 [15] ―amkor technology, qfn (mlf) package design kits for agilent ads,‖ (web page), amkor technology, (web page) http://www.amkor.com/go/customer-center/qfn-mlf-package-design-kits-for-agilent-ads [16 ] a. tseng, m. lin, b. hu, j.w. chen, j. m. wan, s. lee, y.-s. lai, ―advanced qfn surface mount application notes development,‖ in proc. of the 12th electronics packaging technology conference (eptc), 2010. [17] c. zwenger, l. smith, and j.s. kim, ―next generation package-on-package (pop) platform with through mold via (tmv™) interconnection technology,‖ originally published in the proceedings of the imaps device packaging conference, scottsdale, az, march 10–12, 2009 file:///c:/users/rghaffar/downloads/amkortmvpoppaperimapsdpc2009.pdf, accessed 11/5/14 [18] k. saban, ―xilinx stacked silicon interconnect technology delivers breakthrough fpga capacity, bandwidth, and power,‖ (web page), xilinx, http://www.xilinx.com/support/documentation/ white_papers/wp380_stacked_silicon_interconnect_technology.pdf, accessed 11-5-14 [19] j. casey, ―system scaling technologies and opportunities for future it workloads and systems,‖ solid state technology network, (web page) http://semimd.com/insights-from-leading-edge/2014/03/03/iftle182-ieee-iss-2014-ibm-linx-imec-ihs-ibs/, accessed, nov., 2014. [20] r. huemoeller, ―advances in interposer assembly,‖ solid state technology (web page), http://electroiq.com/ insights-from-leading-edge/2014/02/gatech-interposer-conf-amkor-globalfoundries/. [21] c. g. woychik, a. agrawal, r. a. zhang, r. latorre, b. s. lee, l. mirkarimi, and s. arkalgud, ―scalable approaches for 2.5d ic assembly‖, in proc. of the surface mount technology international conference proceedings, 2014. [22] j. h. lau, ―3d ic integration and packaging,‖ mcgraw hill professional, 2015. [23] j. h. lau, c. hsinchu, ―3d ic integration with a tsv/rdl passive interposer‖, in proc. of the surface mount technology international conference, 2014. [24] t. mobley, s. cardona, ―2.5d and 3d packaging platform for next generation rf and digital modules using through glass vias (tgv) technology,‖ in proc. of the ieee component and technology conference, 2014. [25] a. shorey, p. cochet, a. huffman, j. keech, m. lueck, s. pollard, and k. ruhmer, ―advancements in fabrication of glass interposers,‖ 2014. [26] j. tong, y. sato, s. takahashi, n. imajyo, a. f. peterson, v. sundaram, and r. tummala, ―highfrequency characterization of through package vias formed by focused electrical-discharge in thin glass interposers‖, in proc. of the ectc 2014. [27] intel news release, (web page), https://newsroom.intel.com/news-releases/intel-announces-newpackaging-and-test-technologies-for-foundry-customers/, accessed mar, 2016 [28] k. banerjee, s. souri, p. kapur, and k. saraswat, ―3-d les: a novel chip design for improving deepsubmicrometer interconnect performance and systems-on-chip integration,‖ ieee proceedings, vol. 89, no. 5, 2001. [29] a. rahman and f. r. reif, ―comparison of key performance metrics in two and three dimensional integrated circuits,‖ in proc. of the ieee international interconnect technology conference, pp. 18-20, 2000. [30] s. das, a. chandrakasan, and r. rei£, ―timing, energy and thermal performance of three dimensional integrated circuits,” in proc. of the great lakes symposium on vls, pp. 338–343, 2004. [31] h. p. hofstee, ―future microprocessors and off-chip sop interconnect,‖ ieee transactions advanced packaging, vol. 27, no. 2, pp. 301–303, may 2004. https://sma.nasa.gov/documents/default-source/defaultfilelibrary/newsfeed-eee-partsbulletin-augdec2013.pdf?sfvrsn=0 https://sma.nasa.gov/documents/default-source/defaultfilelibrary/newsfeed-eee-partsbulletin-augdec2013.pdf?sfvrsn=0 http://www.amkor.com/go/customer-center/qfn-mlf-package-design-kits-for-agilent-ads file:///c:/users/rghaffar/downloads/amkortmvpoppaperimapsdpc2009.pdf http://www.xilinx.com/support/documentation/white_papers/wp380_stacked_silicon_interconnect_technology.pdf http://www.xilinx.com/support/documentation/white_papers/wp380_stacked_silicon_interconnect_technology.pdf http://semimd.com/insights-from-leading-edge/2014/03/03/iftle-182-ieee-iss-2014-ibm-linx-imec-ihs-ibs/ http://semimd.com/insights-from-leading-edge/2014/03/03/iftle-182-ieee-iss-2014-ibm-linx-imec-ihs-ibs/ http://electroiq.com/insights-from-leading-edge/2014/02/gatech-interposer-conf-amkor-globalfoundries/ http://electroiq.com/insights-from-leading-edge/2014/02/gatech-interposer-conf-amkor-globalfoundries/ https://newsroom.intel.com/news-releases/intel-announces-new-packaging-and-test-technologies-for-foundry-customers/ https://newsroom.intel.com/news-releases/intel-announces-new-packaging-and-test-technologies-for-foundry-customers/ 610 r. ghaffarian [32] a. rahman, s. das, a. chandrakasan, and r. rei£, ―wiring requirement and three-dimensional integration technology for field programmable gate arrays,‖ ieee transactions vlsi, vol. 11, no. 1, pp. 44–54, february 2003. [33] j. vardaman, ―3-d through-silicon vias become a reality,‖ semiconductor international, pp. 37–40, june 2007. [34] p. e. garrou, e. j. vardaman, and p. d. franzon, ―through silicon via technology: the ultimate market for 3d interconnect,‖ tech search international, january 2008. [35] f. von trapp, ―are there still gaps in 3d readiness‖ (web page), 3dincites, (web page), http://www.3dincites.com/2014/08/gaps-in-3d-ic-readiness/, accessed november 14, 2014. [36] ipdintegrated passive devicesa chip scale module package technology, (web page) http://www.statschippac.com/~/media/files/package%20datasheets/csmp.ashx, accessed november 14, 2014. [37] v. solberg, ―embedded passive technology materials, design and process,‖ in proc. of the surface mount technology association proceedings, 2014. [38] l. del catillo, a. moussessian, m. mojarradi, e. kolawa, r. w. johnson, and b. blalock, ―advanced embedded active assemblies for extreme space applications,‖ jet propulsion laboratory, california institute of technology, pasadena, ca, (web page), http://trs-new.jpl.nasa.gov/dspace/bitstream/2014/41385/1/090330.pdf. [39] n. hayashi, h. mahicda, n. shintani, n. masuda, k. hashimoto, a. furuno, k. yoshimitsu, y. kikuchi, and y. hiruta, ―a new embedded structure package for next generation, wfotm (wide strip fanout package,‖ pan pacific symposium proceedings, surface mount technology association, 2014, (web page), http://www.smta.org/ [40] l. boettcher, s. karaszkiewicz, d. manessis and a. ostmann, ―development of embedded power electronics modules for automotive applications,‖ in proc. of the surface mount technology association, 2012. [41] h. stahr and m. beessley, ―embedded components on the way to industrialization,‖ in proc. of the surface mount technology association, 2011. [42] j. vardaman, k. carpenter, ―embedded components, why now?,‖ surface mount technology association proceedings, luncheon speaker, 2014, (web page), http://www.smta.org/. [43] r. ramesham, r. ghaffarian, ―challenges in interconnection and packaging of microelectromechanical systems (mems),‖ in proc. of the 50th ieee electronic components & technology conference, 2000, pp. 666-675. [44] r. ghaffarian, d.g. sutton, p. chafee, n. marquez, a. k. sharma, a. teverovski, ―thermal and mechanical reliability of five cots mems accelerometers,‖ nasa electronic parts and packaging program, http://nepp. nasa. gov/eeelinks/february2002/thermal_and_mechanical_reliability. pdf, 2002 feb. [45] r. ramesham, r. ghaffarian, n. p. kim, ―reliability issues of cots mems for aerospace applications,‖ in proc. of the symposium on micromachining and microfabrication, 1999, aug. 18, pp. 83-88. [46] garrou, p., insights from leading edge, solid state technology, (web page) http://electroiq.com/ insights-from-leading-edge/, accessed mar., 2016 [47] jisso international council, (web page), http://home.jeita.or.jp/jisso2/english/committee/index.html, accessed, oct., 2015. [48] j. fjelstad, ―the electronic interconnection hierarchy,‖ global smt & packaging, (web page), http://www.globalsmt.net/smt/index.php?option=com_content&view=article&id=10890&itemid=413, accessed june 29, 2013. [49] j. w. evans, j. y. evans, r. ghaffarian, a. mawer, k. lee, c. shin, ―simulation of fatigue distributions for ball grid arrays by the monte carlo method,‖ microelectronics reliability, vol. 40, no. 7, pp. 114755, 2000. [50] h. oh, h. p. wei, b. han, and b. d. youn, ―probabilistic lifetime prediction of electronic packages using advanced uncertainty propagation analysis and model calibration,‖ ieee transactions on components, packaging and manufacturing technology, vol. 6, no. 2, february 2016. [51] m. pecht, ―prognostics and health management of electronics,‖ wiley-interscience, new york, ny, 2008. [52] s. mathew, m. osterman, and m. pecht, ―considerations in implementing canary based prognostics‖, in proc. of the ieee conference prognostics and health management (phm), june 2015, pp. 1-7. ieee. [53] c. hendricks, e. george, m. osterman, m. pecht, ―3 physics-of-failure (pof) methodology for electronic,‖ reliability characterisation of electrical and electronic systems, pp. 24-27, 2014. http://www.3dincites.com/2014/08/gaps-in-3d-ic-readiness/ http://www.statschippac.com/~/media/files/package%20datasheets/csmp.ashx,%20accessed%20november%2014,%202014 http://www.statschippac.com/~/media/files/package%20datasheets/csmp.ashx,%20accessed%20november%2014,%202014 http://trs-new.jpl.nasa.gov/dspace/bitstream/2014/41385/1/09-0330.pdf http://trs-new.jpl.nasa.gov/dspace/bitstream/2014/41385/1/09-0330.pdf http://www.smta.org/ http://www.smta.org/ http://electroiq.com/insights-from-leading-edge/ http://electroiq.com/insights-from-leading-edge/ http://home.jeita.or.jp/jisso2/english/committee/index.html http://www.globalsmt.net/smt/index.php?option=com_content&view=article&id=10890&itemid=413 microelectronics packaging technology roadmaps, assembly reliability, and prognostics 611 [54] p. lall, r. lowe, k. goebel, k., ―prognostic health monitoring for a micro-coil spring interconnect subjected to drop impacts,‖ in proc. of the ieee prognostics and health management (phm) conference, 2014, pp. 1-11. [55] p. lall, s. deshpande, l. nguyen, m. murtuza, ―prognostic indicators for cu-al wirebond degradation under operation at elevated temperature and combined temperature humidity,‖ in proc. of the ieee prognostics and health management (phm) conference, 2014, pp. 1-13. [56] p. james, j. hofmeister, b. judkins, d. goodman, ―a low-power sensor design, sj monitor, for monitoring 24x7 the health of bga solder joints,‖ (web page) http://www.microsemi.com/documentportal/doc_view/131711-a-low-power-sensor-design-sj-monitor, accessed 3/10/16 [57] d. an, n. h. kim, j. h. choi, ―practical options for selecting data-driven or physics-based prognostics algorithms with reviews,‖ reliability engineering & system safety, vol. 133, pp. 223-36, 2015. [58] e. suhir, ―three-step concept (tsc) in modeling microelectronics reliability (mr): boltzmann–arrhenius– zhurkov (baz) probabilistic physics-of-failure equation sandwiched between two statistical models,‖ microelectronics reliability, vol. 54, pp. 2594-2603, 2014. [59] s. kartalopoulos, understanding neural networks and fuzzy logic, ieee press, 1997 [60] t. a. doug, a. r. stubberud, ―convergence analysis of cascade error projection-an efficient learning algorithm for hardware implementation,‖ international journal of neural systems, vol. 10, no. 3, pp. 199-210, june 2000. [61] a. m. deshpande, g. subbarayan, d. rose,‖a system for first order reliability estimation of solder joint area array packages,‖ transaction of the asme, vol. 122, pp. 6-13, 2000. [62] r. darveaux, k. banerji, a. mawer, and g. dody, 1995. reliability of plastic ball grid array assembly. ball grid array technology, pp. 379-442. [63] r. ghaffarian, ―accelerated thermal cycling and failure mechanisms for bga and csp assemblies,‖ j. electron. packag, vol. 122, no. 4, pp. 335-340, 2000. [64] cbga assembly and rework, ibm user‘s guideline (may 23, 2002) http://www.microsemi.com/document-portal/doc_view/131711-a-low-power-sensor-design-sj-monitor http://www.microsemi.com/document-portal/doc_view/131711-a-low-power-sensor-design-sj-monitor instruction facta universitatis series: electronics and energetics vol. 32, no 1, march 2019, pp. 51-63 https://doi.org/10.2298/fuee1901051d reduction of susceptibility from electromagnetic interference in sensorless foc of ipmsm * lindita dhamo 1 , aida spahiu 1 , mitja nemec 2 , vanja ambrozic 2 1 polytechnic university of tirana, faculty of electrical engineering, tirana, albania 2 university of ljubljana, faculty of electrical engineering, ljubljana, slovenia abstract: this paper presents main problems of practical implementation of field oriented control (foc) developed for an interior permanent magnet synchronous motor (ipmsm). the main sources of electromagnetic interferences (emi) noises are discussed and practical aspects when a position sensor is used are presented. the control system is based on the dsp processing unit, together with inverter and encoder. the main problem addressed in this paper is reduction of vibrations in torque and speed response in a real system by re-placing a hardware device of control system very susceptible to emi noises, like encoder, with a soft block in control unit like sliding mode observer, less sensitive to emi. the experimental results with this control structure show considerable ripple reduction at steady state in torque, speed and current, as a consequence of reduction of sensitivity to emi noises. key words: emi, ipmsm, sensorless foc. 1. introduction pmsm has become really competitive to an induction motor in terms of lifetime cost. this motor has recently become quite attractive due to its many advantages be-cause magnets, instead of windings, are used for rotor magnetization [2]. phase inductance of pmsm is lower than that of the induction motor. thus, in pmsm, the effect of electromagnetic noise is greater when compared to the induction motor [3]. electro magnetic interference (emi), the appropriate term when referring to lower frequencies, or radio frequency interference (rfi), the appropriate term when referring to higher frequencies, is unwanted electrical noise that can interfere with signaling or communication equipment. drives with 8 khz or higher switching frequency have many harmonic frequencies, which produce problematic emissions affecting sensitive equipment. received february 3, 2018; received in revised form october 12, 2018 corresponding author: aida spahiu polytechnic university of tirana, faculty of electrical engineering, sheshi “nene tereza” nr.4, 1000, tirana, albania (e-mail: aida.spahiu@fie.upt.al) *an earlier version of this paper was presented at the 13th international conference on applied electromagnetics (пес 2017), august 30 september 01, 2017, in niš, serbia [1]. 52 l. dhamo, a. spahiu, m. nemec, v. ambrozic reducing the pwm carrier frequency reduces the effects and lowers the risk of common mode noise interference. higher carrier frequencies are less efficient for the drive, but lower carrier frequencies are less efficient for the motor. in general, restricting the propagation of electrical noise as close to the noise source as possible is the best way to protect sensitive devices from emi. there are many studies about the reduction of emi on ac drive systems. random pwm technique has been developed to suppress emi in power converters [4]–[8] and have shown that with this method it is possible to reduce acoustic noise and mechanical vibration. random pwm are various carried out in ways, such as by random switching frequency, random pulse position technique and random switching technique. it was shown that acoustic noise and emi were suppressed by using random pwm technique in svpwm algorithm [9]–[10]. methods having various switching frequencies like random or chaotic pwm are generally applied to induction motor. chaotic signal is obtained more easily than the random signal and it is also simpler to apply [11]. various techniques are available and discussed in literature, such as chaotic sinusoidal pwm, chaotic pulse position pwm, hybrid chaotic spwm and chaotic sv-pwm methods [12]–[14]. emi can create adverse effects with electrical components in the motor control panel, contributing to a loss of serial communication, nuisance drive trips and disturbance of control signals. emi not only degrades the performance of electrical equipment but also decreases the lifetime of components and increases the financial cost for equipment maintenance. this paper deals with electromagnetic interference (emi) and its prevention through the design of control sys-tem. it present the case when the sensitive device from emi, or noise receiver , is replaced with a soft block in control scheme, less sensitive to emi, in order to reduce the negative effect of emi propagation that are present in the system. 2. mathematical model of an ipmsm with system uncertainties 2.1 dynamic model of an ipmsm applying kirchhoff’s voltage law (kvl) to the dq-axis equivalent circuits of a threephase ipmsm yields the following voltage equations in the synchronously rotating d-q reference frame: qs s qs qs qs ds ds mv r i l i ωl i ωλ    (1) ds s ds ds ds qs qsv r i l i ωl i   (2) where vds and vqs are the dq-axis voltages, ids and iqs are the dq-axis currents, rs is the stator resistance, lds and lqs are the dq-axis inductances, ω is the electrical rotor speed, and λm is the magnetic flux. in addition, the electromagnetic torque can be obtained from the following electrical and mechanical equations: 3 [ ( ) ] 2 2 e m qs ds qs ds qs p t λ i l l i i   (3) 2 2 e lt t b ω j ω p p    (4) experimental evaluation of torque ripple reduction in a sensorless foc of ipmsm drive... 53 where te and tl are the electromagnetic and load torques, p is the number of pole pairs, b is the viscous friction coefficient, and j is the rotor inertia. substituting (3) into (4) yields the following speed dynamic equation: 3 3 2 4 2 2 4 2 2 ds qsm qs l ds qs l lλp b p p ω i ω t i i j j j j      (5) 2.2 the extraction of rotor position the extraction of rotor position is made using the magnitudes of the αβ back emf components and inverse tangent method. in this method the rotor position angle is determined from as follows: 1 ˆˆ ˆ α β e θ tan e           (6) however, the position calculated by this method depends on the quality of the estimated back emf. because of the low sampling frequency, the estimated back emf will have both phase and magnitude shifts, which will bring oscillations and phase shift to the estimated position. in order to mitigate the oscillation of the estimated position, an estimated speed feedback algorithm is used to improve the inverse tangent method for position calculation, as shown in fig. 2, and the formula is as (7). ˆ ˆ[ ] [ 1] [ 1]2 sθ k θ k ω k t     (7) block diagram that represent the algorithm for improving the inverse tangent method for rotor position calculation is shown in figure 2. there is a logic used for rotor position selection, which consist in comparison of evaluated position during the k th time step, of 1 ˆ [ ]θ k that can be obtained from the smo, and 2 ˆ [ ]θ k that has been calculated at the end of the (k-1) th time step. the error ε[k] between 1 ˆ [ ]θ k and 2 ˆ [ ]θ k will be calculated as difference of them at the beginning of the k th time step. if the generated error ε[k] is smaller than the predetermined position error margin, than ˆ[ ]θ k = 1 ˆ [ ]θ k ; otherwise, ˆ[ ]θ k = 2 ˆ [ ]θ k . this method used to extract the rotor position, in implementation has shown a good performance of speed control for ipmsm and the oscillations in the estimated rotor position are mitigated. + + delay selection of rotor position ++atan2 compensation of phase ][ˆ ke ][ˆ ke ][ˆ k ]1[ˆ k ][ˆ 1 k ][ˆ 2 k ]1[ k st fig. 2 block diagram to improve the inverse tangent method for position calculation. 54 l. dhamo, a. spahiu, m. nemec, v. ambrozic 3. emi noises and effects the reasons for electromagnetic compatibility (emc) having grown in importance at such a rapid pace are owed to the increasing frequency because of use of digital electronics in today’s world and the virtually worldwide imposition of governmental limits on the radiated and conducted noise emissions of digital electronic products [15]. there are three ways to prevent interference: suppress the emission at its source, make the coupling path as inefficient as possible, make the receptor less susceptible to the emission. although these three alternatives should be kept in mind, the “line of defense” in this work is to make the receptor less susceptible to the emission. the paper shows the effect of replacing a device of the control system (the absolute en-coder) with a soft block (sliding mode observer) into control scheme, in order to reduce the disturbances caused by emi. the experimental results confirm the effectiveness of sensorless field oriented control by sliding mode observer of ipmsm in decreasing the sensitivity of control system to emi noises. 3.1. emi noise transmission path each type of interference problem includes a source, a receptor, and a transmission path between the source and victim or receptor of noise that suffer from emi noises. conducted emi is defined as interference that uses conductors as a path from a source to receptor. for example, a motor encoder grounded to a noisy connection would conduct noise to the drive encoder interface. the conducted noise could cause the drive encoder interface to receive inexact voltage signals precluding the motor drive from reading the rotor position and speed correctly thus causing drive faults. at the beginning, it may be supposed that the root cause for the drive operational malfunctions are related to incorrect parameter setting or possible a faulty drive interface board. closer inspection reveals the culprit to be poor grounding of the encoder cable. radiated emi is defined as interference that uses a wireless path from a source to the receptor. this is commonly seen in motor control panels with ac motor wires are laid in parallel next to low-voltage control wiring. the result is coupling between the wires causing disturbances on the data transmission line. for example, if the motor wires were laid in close proximity to a serial link between the motor controller and the drive, the coupling of the signals may corrupt the data packets being transferred between the controller and drive. 3.2. emi noise sources the motor drive system (mds) in industrial applications has become a new noise source because its switching frequency, operation voltage and current variations have been increased, causing unwanted effects such as common-mode (cm) noise and electromagnetic interference (emi) [16]. hence, the analysis of the noise propagation paths is necessary for understanding and improving the system reliability. noise propagation paths are mainly composed of an inverter, a three phase cable, a ball-bearing, an electric motor, and multiple ground nodes. especially the electric motor is an electric active load of inverter and a mechanical power source of vehicle as well. therefore, unwanted current flows to whole vehicle body through the electric motor by capacitive coupling in both the electric components and the mechanical parts. experimental evaluation of torque ripple reduction in a sensorless foc of ipmsm drive... 55 emc of electronic circuits is to a great extent deter-mined by the way the components are laid out and inter-connected. signal lines with their corresponding return line form an antenna, which is able to radiate electromagnetic energy, where the magnitude is determined by current amplitude, frequency and the geometrical area of the current loops. there are three typical sources for emi: power sup-ply lines, signal lines carrying high frequency, oscillator circuit. an important source of electromagnetic interference noise is the crosstalk. this essentially refers to the unintended electromagnetic coupling between wires and pcb lands that are in close proximity. crosstalk is distinguished from antenna coupling in that it is a near-field coupling problem. crosstalk between wires in cables or between lands on pcbs concerns the intrasystem interference performance of the product; that is, the source of the electro-magnetic emission and the receptor of this emission are within the same system. thus this reflects the third concern in emc: the design of the product such that it does not interfere with itself. with clock speeds and data transfer rates in digital control systems steadily increasing, crosstalk between lands on pcbs is becoming a significant mechanism for interference in modern digital systems. 3.3. receptors of emi in a real digital control system, there are several devices sensitive to emi, like encoders, tachometers, analog signals and measurement devices, communication networks and devices, microprocessor devices etc. each of them demonstrates specific symptoms when affected by emi noises. encoders may include jumping around of encoder counts when still and non-repeatable positioning when moving. tachometers may include incorrect speed reporting or un-expected speed fluctuations. analog signals and measurement devices may include unexpected voltage spikes, ripple, or jitter on the analog signal causing incorrect and non-repeatable readings. communication networks and devices almost always include loss of communication or errors in reading or writing data. the microprocessor devices can include loss of communications, faults or failure in the processor, digital inputs or outputs to trigger unexpectedly, analog inputs or outputs to report the incorrect value. the upper devices are all very important and irreplaceable, except the encoder. in the sensorless control system that we have developed, the elimination of one of the most sensitive receiver noises from emi, will reduce significantly the negative effects, like ripple in analog signals: torque, speed and current. in this paper, the effect of replacing the en-coder with an observer of sliding mode type is investigated. 4. ipmsm sensorless control 4.1. control unit the control system for sensorless foc of ipmsm with sliding mode observer, developed in this study, is com-posed by three main blocks: control unit, power module and measurement unit. the control unit is based upon a piccolo f28069 controlstick dsp by ti [17]. it consists of an adc converter, pwm channels and floating point central processing unit. the stator windings of ipmsm are supplied from a conventional 3 phase power module made up of 6 mosfet-s, operated as keys for break control. 56 l. dhamo, a. spahiu, m. nemec, v. ambrozic 4.2. measurement unit the measurement unit is a determinative part in the closed loop control system and encoder has a crucial role since the performance of foc depends directly on accurate rotor position information. in this study, only the effect of encoder in emi noises is considered. the idea has been realized through a soft block added in control unit block. instead of absolute encoder a sliding mode observer to calculate the rotor position and rotor speed that are needed for foc algorithm is designed. the results for important quantities of control system are then compared. 4.3. modular philosophy of digital motor control although a standardized platform, a modular ti piccolo f28069 controlstick dsp provides a smooth way for customers to quickly port the reference software to customized hardware. ti’s modular philosophy, which clearly separates modules into cpu and peripheral-dependent (drivers) categories, greatly simplifies the porting process. the ipmsm speed controller and the speed calculator from position information is the appropriate partitioning point in this system due to its complexity and reusability. this modular philosophy of ti’s platforms has encouraged and allowed us to develop and modify the standard dmc sys-tem to a sensorless one. the figure 1 shows an overall block diagram of the proposed observer-based nonlinear sliding mode speed control system. ac/dc converter 3 phase inverter power supplies gate drivers analog conditioning gd 12 bit adc epwm module serial interface eqep svpwm phase current reconstruction bus over voltage pi foc s speed calculator ` acin dc bus proccesor ground s y n c gpio ose pwm d e fe k t b u s v b u s i o v e r c u rr e n t m o to r p w m s t ri g g e r reference speed actual speed angle ualpha ubeta torque reference iq_ref id_ref angle p ic c o lo f 2 8 0 6 9 observer smo ualpha ubeta ibeta ialpha speed estimator angle angle fig. 1 control scheme of sensorless smo ipmsm drive. the blocks “speed estimator” and “observer smo” are added in the existing control scheme in order to calculate the rotor position and rotor speed through voltages and currents of stator, digitized and transformed by clarke transformation (to uα, uβ, iα and iβ) skipping the need for encoder, that gives a very important information like rotor position. the control scheme, by a soft-key provides sensored or sensorless operation and experimental results for quantities like torque, speed and currents to be compared and analyzed. experimental evaluation of torque ripple reduction in a sensorless foc of ipmsm drive... 57 5. experimental setup in order to verify the performance and effectiveness in emi noise reduction of the proposed observer-based non-linear sliding mode controller, experiments are carried out with a prototype ipmsm drive system based on a piccolo f28069 controlstick dsp. figure 2 shows the experimental setup of sensorless smo ipmsm drive. the hardware circuit consists of an ipmsm, product of slovenian industry mahle-letrika dedicated for electric power steering systems, a three-phase inverter with 6 mosfets (irfp4410), a control board with a f28069 controlstick dsp (float-point), an absolute optical encoder (hengstler ad35, 22 bit), two hall-effect current sensors (lts15np), and a pmsm motor as load in a back-to-back configuration. table 1 show the parameters of ipmsm used in experiment. the dc-link voltage (295 vdc) is obtained from the utility (ac 230v/50hz) using a single-phase full-bridge rectifier. the two phase currents (ia, ib) are measured by lts15np hall sensors and then converted into digital form using two 12-bit a/d converters. in addition, the rotor position (θ), which is used to execute the coordinate transformation for foc, is measured by the absolute encoder and fed to tex-as instruments piccolo f28069 controlstick dsp via a 32-bit qep. note that the rotor speed (ω) required to perform the feedback control can be easily obtained by differentiating θ with respect to time. table 1 ipmsm parameters. parameters symbol unit value rated power pn w 600 rated speed ωn rpm 1250 stator resistance rs ω 0.06 d-axis inductance ld mh 0.068 q-axis inductance lq mh 0.086 total linkage flux λpm wb 0.0373 pole pairs p 3 inertia j kgm 2 0.0001682 fig. 2 experimental setup of sensorless smo of ipmsm drive. 58 l. dhamo, a. spahiu, m. nemec, v. ambrozic 6. experimental results and discussions a variety of experiments have been performed. results for sensor and sensorless mode are compared in order to evaluate the emi noises reduction by replacing the absolute encoder with sliding mode observer. since the emi noises are due to lot of complex and coupled factors, the effect of removing only the position sensor is checked in all electric and mechanic quantities that are important for the quality of control like torque, speed, and currents. that kind of nonlinear control used in our experiments, the sliding mode control, “suffer” from chattering phenomena while implementation in real time control of ipmsm drive. it is obvious that the chattering is overlapped to speed and torque ripples, resulting in a worse situation. but the encoder, is the most susceptible hardware part of the drive by emi, and replacing that hardware with a software, the smo, reduce the possibility to effect the drive operation. experimentally, result that the torque ripples are reduced up to 50%. furthermore, the existence of a no observable zone for very low speeds of motor is a weak point of operation for ipmsm drive . so the results for speed response in steady state are taken at two different regimes: for rated speed and low speed, 15 rev/s and 3.5 rev/s, respectively. the figures are presented in appropriate scale to compare the amplitudes of ripples for both sensor and sensorless operation (the reference signal is shown for speed). experimental results show that sensorless control exhibits less ripples in electromagnetic torque. 0 50 100 150 200 250 300 350 400 450 500 -0.66 -0.64 -0.62 -0.6 -0.58 -0.56 -0.54 -0.52 -0.5 -0.48 time [samples] t o rq u e c o m p a ri s o n [n m ] torque, sensored torque sensorless fig. 3 experimental results for comparison of electromagnetic torque with sensor and sensorless control. from figure 3 it is clear that electromagnetic torque during sensorless operation is more stable and has fewer ripples. the ripple’s amplitude for torque during sensorless operation is reduced up to 50% of ripple’s amplitude of torque during sensor operation. this is not an isolated fact, which occurs accidentally. the replacing of encoder with soft block smo, “confront” directly one of the receivers of emi noises, e.g. position sensor. in general, the “first line of defense” is to suppress the emission as much as possible at the source, but it is a valid strategy to make the control system “deaf” for a part of emi noises. experimental evaluation of torque ripple reduction in a sensorless foc of ipmsm drive... 59 0 50 100 150 200 250 300 350 400 450 500 14.7 14.8 14.9 15 15.1 15.2 15.3 15.4 15.5 15.6 time [samples] s p e e d c o m p a ri s o n speed calculated from encoder speed estimated from smo speed reference fig. 4 experimental results for comparison of speed response in steady state with sensor and sensorless control during rated speed regime. figure 4 shows the experimental results for speed response at steady state for both sensor and sensorless operation near rated speed. the taken results show very clear that sensorless operation provide a smooth speed control almost equal to reference speed. compared with speed response of sensor operation, the accuracy of speed estimation during sensorless operation is very high and speed error is approximately zero. so, the rotor speed reflects a great benefit in using a sensorless scheme for vector control of ipmsm from emi noises point of view. another important quantity for field oriented control algorithm is direct current id. in order to verify the validity of our strategy, we have to check the effect expressed in results for other important quantities in field oriented control like rotor speed and direct current id. currents id and iq, are variables calculated by clarke and park vector transformations of digitalized real currents flowing into stator of ipmsm, sensed with hall effect sensors and digitalized with adc converter. the direct current id is a fluxproducing component that during execution of the foc algorithm, is forced to zero in order to achieve the maximum torque production for a given stator current. so, being this very important, the results for current id during sensor and sensorless operation are put together in figure 5, were it is clearly shown that amplitude of ripples for current id is reduced by 50% during sensorless operation. 0 50 100 150 200 250 300 350 400 450 500 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 time[samples] id c o m p a ri s o n [ a ] id-sensored id-sensorless fig. 5 experimental results showing comparison between direct current id in sensored and sensorless control. 60 l. dhamo, a. spahiu, m. nemec, v. ambrozic the sensorless drive systems based on state observers, suffer from the un-observability in the area of very low speed. 0 50 100 150 200 250 300 350 400 450 500 3 3.2 3.4 3.6 3.8 4 4.2 4.4 time[samples] t ra n s ie n t re s p o n c e o f ro to r s p e e d (c o m p a ri s o n ) [r e v /s ] reference speed speed calculated from encoder speed estimated from smo fig. 6 experimental results for comparison of speed response in steady state during very low speed regime with sensor and sensorless control. since this is the lower boundary of functionality of observer, where all quantities tend to be uncontrollable, it seems to be useful to compare the speed responses for both sensor and sensorless operation. figure 6 shows a better behavior of observer at very low speed than using the encoder. the speed fluctuations are less than 50% during sensorless operation. the transient response is quite important when analyzing the behavior of a device. figure 7 show the transient response for torque during sensor and sensorless operation. it is clearly shown that sensorless operation has a smaller overshot and need less time (the half) to stabilize. 0 50 100 150 200 250 300 350 400 450 500 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 time [samples] t o rq u e tr a n s ie n t re s p o n s e [ n m ] with sensor sensorless fig. 7 experimental results for comparison of transient response for torque during sensor and sensorless operation. figure 8 shows the transient responses for speed during sensor and sensorless operation. it is clearly shown that sensorless operation has a smaller overshot (approximately 7%) and need almost the same time to be stabilized. experimental evaluation of torque ripple reduction in a sensorless foc of ipmsm drive... 61 t ra n s ie n t r e s p o n s e o f r o to r s p e e d time [samples, 1sample=0.00015s] 0 50 100 150 200 250 300 350 400 450 500 -2 0 2 4 6 8 10 12 14 16 calculated speed from encoder estimated speed from smo reference speed fig. 8 experimental results for comparison of transient response for rotor speed during sensor and sensorless operation. the fig. 9 show the results for angle estimation during sensorless operation by sliding mode observer. the accuracy of angle estimation is crucial for control performance because that angle estimated by smo block is used to calculate the rotor speed and to realize vector transformations of clarke and park in order to generate the right value of voltage by svpwm block. 0 50 100 150 200 250 300 350 400 450 500 -1 0 1 2 3 4 5 6 7 koha [samples, 1 sample = 0.00015s] p o z ic io n i i ro to ri t[ ra d ] pozicioni prej enkoderit pozicioni i vlerësuar me smo gabimi i vlerësimit të këndit time 0 50 100 150 200 250 300 350 400 450 500 -1 0 1 2 3 4 5 6 7 angle from encoder angle estimated with smo error estimated angle r o to r p o s it io n [ ra d ] fig. 9 experimental results for rotor position estimation by smo and encoder. as a summary of experimental results, one may conclude that elimination of one of receptors of emi noises (encoder) make the control system less susceptible to them. this strategy, although ranked third, is very useful in achieving a better overall performance of control system. an accurate view of all results confirms that using the sensorless mode of operation has a lot of benefits. this kind of nonlinear control (the sliding mode), “suffer” from chattering phenomena while implementation in real time control of ac drives and ipmsm drives too. it is obvious that the chattering is overlapped to speed and torque ripples, resulting in a worse situation. but the encoder, is the most susceptible hardware part of the drive by emi, and replacing that hardware with a software, the smo block, 62 l. dhamo, a. spahiu, m. nemec, v. ambrozic reduce the possibility to effect the drive operation. experimentally, result that the torque ripples are reduced in total up to 50%. 5. conclusions the paper presents main problems of practical implementation of sensorless foc of an ipmsm. electromagnetic distortions have pernicious influence on the calculations performed in control unit as well as for the operation of absolute encoder. eliminating one of the sufferers from emi noises, by replacing it with a sliding mode observer, provide a noticeable improvement in response of speed and torque in the control system. this improvement is reflected in decreasing effect of emi, higher efficiency, less vibrations, and better overall performance. different experiments were performed on sensor and sensorless foc and measurements of currents, torque, rotor speed and currents are compared. acknowledgement: this paper presents a part of the work supported by the research program of erasmus mundus/basileus iv (2013-2014), in laboratories of department of mechatronics, faculty of electrical engineering, university of ljubljana, slovenia.. references [1] l. dhamo, a. spahiu, m. nemec, v. ambrozic, "electromagnetic interferation reduction by using sensorless foc of ipmsm with piccolof28069 controlstick", in proceedings of the extended abstracts of the 13th international conference on applied electromagnetics (пес 2017), niš, serbia, 2017, pp. 69. [2] b. k. bose, “power electronics and motor drives: advances and trends”. usa: elsevier, 2006. [3] y. xu, q. yuan, j. zou, y. li, “analysis of triangular periodic carrier frequency modulation on reducing electromagnetic noise of permanent magnet synchronous motor”, ieee trans. magn., vol. 48, no. 11, pp. 44244427, 2012. [4] r. l. kirlin, s. kwok, s. legowski, a. m. trzynadlowski, “power spectra of a pwm inverter with randomized pulse position”, ieee trans. power electron., vol. 9, no. 5, pp. 463-472, 1994. [5] k. s. kim, y. g. jung, y. c. lim, “a new hybrid random pwm scheme”, ieee trans. power electron., vol. 24, no. 1, pp. 192-200, 2009. [6] s. kaboli, j. mahdavi, a. agah, “application of random pwm technique for reducing the conducted electromagnetic emissions in active filters”, ieee trans. ind. electron, vol. 54, no. 4, pp. 2333-2343, 2007. [7] a. m. hava, e. un, “performance analysis of reduced common-mode voltage pwm methods and comparison with standard pwm methods for three-phase voltage-source inverters”, ieee trans. power electron, vol. 24, no. 1, pp. 241-252, 2009. [8] y. c. lim, s. o. wi, j. n. kim, y. g. jung, “a pseudorandom carrier modulation scheme”, ieee trans. pow. electron, vol. 25, no. 4, pp. 797-805, 2010. [9] j.-y. chai, y.-h. ho, y.-c. chang, c.-m. liaw, “on acoustic-noise reduction control using random switching technique for switch mode rectifiers in pmsm drive”, ieee trans. ind. electron., vol. 55, no. 3, pp. 1295-1309, 2008. [10] h. khan, e. miliani, k. e. k. drissi, “discontinuous random space vector modulation for electric drives: a digital approach”, ieee trans. power electron., vol. 27, no. 12, pp. 4944-4951, 2012. [11] k. t. chau, z. wang, ”chaos in electric drive systems-analysis, control and application”. singapore: wiley, 2011. [12] h. li, y. liu, j. lu, t. zheng, x. yu, “suppressing emi in power converters via chaotic spwm control based on spectrum analysis approach”, ieee trans. ind. electron., vol. 61, no. 11, pp. 6128-6136, 2014. [13] z. wang, k. t. chau, c. h. liu, “improvement of electromagnetic compatibility of motor drives using chaotic pwm”, ieee trans. magn., vol. 43, pp. 2612-2614, 2007. experimental evaluation of torque ripple reduction in a sensorless foc of ipmsm drive... 63 [14] z. zhang, k. t. chau, z. wang, w. li, “improvement of electromagnetic compatibility of motor drives using hybrid chaotic pulse width modulation”, ieee trans. magn., vol. 47, no. 10, pp. 4018-4021, 2011. [15] c.r. paul “ introduction to electromagnetic compatibility”, second edition, john wiley & sons, inc., hoboken, new jer-sey.2006. [16] dabi, j. zare, f. ledwich, g. ghosh, a., "leakage current and common mode voltage issues in modern ac drive systems," power engineering conference, 2007. aupec 2007. australasian universities, pp.1-6, 9-12 dec. 2007. [17] e. haseloff, ”printed circuit board layout for improved electromagnetic compatibility”, texas instruments 1996. [18] 12423 facta universitatis series: electronics and energetics vol. 37, no 3, september 2024, pp. 437 – 453 https://doi.org/10.2298/fuee2403437f © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper a novel reversible multilayer full adder circuit design in qca technology reza faraji, abdalhossein rezai department of electronical engineering, university of science and culture, tehran, iran orcid ids: reza faraji https://orcid.org/0009-0009-2709-0214 abdalhossein rezai https://orcid.org/0000-0001-8529-499x abstract: the qca technology is a promising kind of nanotechnology that can replace the conventional cmos technology due to high-speed, high-dense, and low power consumption properties. the qca technology is based on the coulomb repulsion and quantum cell instead of using a transistor. the qca cell is a square structure with 4 dots placed at the square corners and 2 free electrons. the reversible circuits design is a technique that can reduce the power consumption in digital circuits design. in this technique, there is a one-to-one mapping between its input and output vectors. in addition, the input vector can always be formed from the output vector, and conversely, the output vector can also be formed from the input vector. as a result, using reversible technique in qca digital circuit is an important issue. on the other hand, the full adder plays a vital role in digital circuits design. this paper presents and evaluates a highperformance qca reversible full adder (rfa) circuit. the developed rfa circuit is implemented in three layers using reversible gates. the functionality of the suggested rfa circuit is evaluated using qcadesigner tool. the results show that the complexity, required area, delay, and average-energy in the developed rfa circuit are 40 cells, 0.016 µm2, 0.75 clock cycles, and 1.74 mev, respectively. the comparison results demonstrate that the developed rfa circuit outperforms other rfa circuits with regard to area and costs. key words: qca, multilayer, reversible, full adder, qcadesigner 1. introduction based on moore's law, the transistors count on a chip should be double every 18 months till 2 years, but it faces some problems [1]. the cmos technology has faced many problems including the short channel effect [2], the lithographic equipment costs [1], leakage off mode [2], high noise absorption, high power consumption, and operating frequency limitations. these problems increase in the nano dimensions. so, the researchers try to use other technologies such as silicon on insulator (soi), carbon nano-tube field effect transistor received january 15, 2024; revised march 17, 2024 and march 26, 2024; accepted april 09, 2024 corresponding author: abdalhossein rezai department of electronical engineering, university of science and culture, tehran, iran. e-mail: rezai@usc.ac.ir https://orcid.org/0009-0009-2709-0214 https://orcid.org/0000-0001-8529-499x 438 r. faraji, a. rezai (cntfet), single electron transistors (set) [3], spintronic, molecular fragments and quantum-dot cellular automaton (qca) technology . the qca technology is a new technology that can be considered as a suitable alternative to the cmos technology due to significant advances in the design of` electronic circuits [4], having good energy efficiency, high density and very fast computing performance. the qca cell is a basic element in the qca technology, which is a square-shaped structure at nanoscale. each cell has four quantum dots inside a square with two electrons in these dots [5] . nowadays, the low power circuits design is an important issue in the digital circuits design. landauer [6] show that the energy wasted for each bit of information is lost in the irreversible circuits, which is computed as follows [7, 8]. ktln2 (joules) (1) where t and k denote the temperature and boltzmann's constant, respectively. he also [6] showed that, if we want not to lose energy, we must prevent the loss of information. bennett's research [9] helped to solve this problem. one approach to design the low power circuits is reversible circuits design [8]. on the other hand, full adder is one of the main blocks in the computer arithmetic. the logical expressions of the outputs of the full adder circuits are as follows [10]. sum = a⊕b⊕c (2) cout = (a⊕b).c⊕ab where sum and cout denote the summation and carry output, respectively. in addition a, b, and c denote the inputs. in this paper, a new reversible full adder (rfa) circuit is suggested. the suggested rfa is designed based on a new structure in three layers. the proposed multilayer rfa circuit is implemented using the qca designer tool version 2.0.3. in addition, the qca designer-e is employed for the energy estimation. the implementation results show that the suggested rfa circuit has 0.016 μm2 area, and 0.75 clock cycles delay. the comparison demonstrates that the proposed rfa circuit provides advantages in comparison with other rfa circuits. the structure of this study is as follows. the background of the qca technology including the concepts of the qca technology and reversibility, reversible logic gate behavior, and related works of the rfa circuits are summarized in section 2. the developed circuits are proposed in section 3. the simulation results and comparison are presented in section 4. finally, conclusion of this paper is presented in section 5. 2. backgrounds 2.1. qca technology the qca technology is a type of technology that is proposed to build electric circuits in nano dimensions. the standard semiconductive materials are used to form the nanostructures that make up the quantum dots. the quantum wells are used to simulate these structures. even at distances several hundred times greater than the lattice constant of the material system, they display energy effects. it is also possible to visualize a dot. when an electron is caught inside a dot, it takes more energy for it to come out. this a novel reversible multilayer full adder circuit designe in qca technology 439 technology provides advantages including high frequency, very low latency, high density, extremely low power usage and small footprint. low energy dissipation occurs during the propagation and state change. consequently, the qca uses a remarkably small amount of power when compared to cmos technology [2]. this technology is based on the qca cell. each qca cell has a square environment and inside it includes four dots that are placed in the square corners. in addition, there are 2 free electrons that can move between dots. so, there are 2 stable states in this structure that can be utilized to indicate the binary states. as a result, it is possible to implement digital circuits in the qca technology. there are two qca basic gates, majority gate and inverter gate [11-14]. figure 1 illustrates the qca cell structure and its stable stats. qca cell quantum dot electron p= +1 p= -1 fig. 1 the qca cell structure and its stable stats 2.2. qca wires the qca wires are created from a combing structure consisting of several qca cells arranged one behind each other due to the coulombic repulsion of the electrons of the adjacent cells, the qca cells assume the same polarity as each other [15]. figure 2 illustrates the qca wires. p=-1 p=-1 p=-1 p=-1 (a) (b) fig. 2 wires in the qca technology a) normal, b) with 450 rotations the multilayer crossovers can effect on the circuit area in the qca technology. it is because the wires can place in different layers. so, the wires do not collide with each other unlike the single-layer arrangement. thus, there is more physical separation between the wires and the cells that make them up. errors can therefore be prevented more readily than with a single layer. the multilayer qca circuits have a more stable response as a result. to implement the multilayer crossover, at least three layers are needed. the multilayer crossover in qca technology is illustrated in figure 3. 440 r. faraji, a. rezai fig. 3 qca multilayer crossing wire 2.3. qca clock the structural features of the qca cell cause the clock to form of electronic agents to control the movement of the electrons. it is inside the cells and the existence of the clock causes creation the synchronization takes place in different parts of the circuit. each clock in the qca technology has four phases, switch, hold, transition, and release [16, 17]. figure 4 displays the qca clock mechanism. in te rd o t b ar ri er time 0 2 3 time switch hold release relax 1 fig. 4 qca clocking with four phases in the switch phase, the cell polarization is under the influence of neighboring cells. in the hold phase, the cells are in a state of polarization electrons at the greatest distance from each a novel reversible multilayer full adder circuit designe in qca technology 441 other. in this phase, cells are able to detect the polarity of adjacent cells. electrons are progressively released throughout the release phase, and the blocking force is reduced. it is polarity-free during the relaxation phase, allowing electrons to flow freely throughout the cell [16]. 2.4. reversibility a gate is called reversible if there is a one-to-one mapping between its input and output vectors. in addition, the input vector can always be formed from the output vector, and conversely, the output vector can also be formed from the input vector. in general, outputs are permutations of inputs so that all types of input modes are also present on the output modes. in reversible logic, we can never find two states among the outputs of the truth table, which has the same inputs. it is also obvious that we cannot find a case where for one input; produce two identical outputs. we do not have feedback and fan-out in these gates [18-22]. 2.5. reversible gates main reversible gates are reversible not gate, controlled-v and controlled-v+ gates, feynman gate, and hn gate [13, 16] that are described in this paper. 2.5.1. not gate the reversible not gate contain one input and one output [13, 23]. figure 5 displays this reversible gate. a not gate p=ā a p=ā (a) (b) fig. 5 reversible not gate a) logic diagram, b) quantum circuit in this gate, the output is denoted by p, which is computed as follows. p = ā (3) where a and p denote input and output, respectively. 2.5.2. feynman gate the feynman gate has 2 inputs and 2 outputs. it is an important reversible gate, which also called controlled not (cnot) gate [13, 24]. figure 6 displays the feynman gate. 442 r. faraji, a. rezai a b feynman gate p=a q=a b a b p=a q=a b (a) (b) fig. 6 feynman gate a) logic diagram, b) quantum circuit the outputs of this gate are as follows. q = a⊕b p = a (4) where q and p denote the outputs, and b and a denote the inputs. 2.5.3. controlled-v and controlled-v+ the controlled-v and controlled-v+ gates are displayed in figure 7. a b p=a q=if a then v(b) v a b p=a q=if a then v+(b) v+ (a) (b) fig. 7 controlled gates a) v gate, b) v+ gate it should be noted that when two v gates are placed one after the other, the v quantum gate will function as a not gate. furthermore, covered by this theorem is the fact that two v+ gates placed back-to-back result in a not gate. the same input is obtained by combining input v gate and input v+ gate[13, 25]. the functionally of these gates are as follows [26]. v × v = not v + × v + = not (5) v × v + = v + × v = i these reversible gates have two inputs and two outputs. the quantum cost of the controlled-v, and controlled-v+ quantum gates are qc=1. 2.5.4. hn gate the hn gate has 4 inputs and 4 outputs [13, 16]. figure 8 illustrates the hn gate. a novel reversible multilayer full adder circuit designe in qca technology 443 a b v c d v v p q r sv + a hn gate b c d p =a q = b r = a b c s = (a b)c ab d (a) (b) fig. 8 hn gate a) logic diagram b) quantum circuit the outputs of this gate are displayed as follow [13, 16]. q=b p=a s=(a⊕b) c⊕ab⊕d (6) r=a⊕b⊕c where p, q, r and s indicate outputs, and d, c, b, and a indicate inputs. this gate contains 3 controlled-v gates, 2 feynman gates, and a controlled -v+ gate. these reversible gates can be used to digital circuits design such as fa circuit, which is considered in this paper. 2.6. related rfa works taherkhani et al.[27] have offered a coplanar rfa circuit that is illustrated in figure 9. fig. 9 layout of the rfa circuit in [27] 444 r. faraji, a. rezai the layout of this rfa is implemented using 2 fg, and a new reversible gate that is named rqg. this circuit can be also used for subtractor. there are four inputs denoted by a, b, 0, and c, and four outputs denoted by cout, bout, gar, sum/diff in this circuits, which are computed as follows. sum = diff =a⊕b⊕c bout =maj (ā, b, c) = a'. b + b.c + a'.c (7) cout = maj (a, b, c) = a.b + b.c + a.c this rfa circuit requires 228 cells, 0.28 μm2 area, and 1.75 clock cycles latency. jeon et al. [28] have offered an rfa circuit, which is shown in figure 10. fig. 10 layout of the rfa circuit in [28] this coplanar rfa contain the toffoli and feynman gates. this rfa has 129 cells, 0.13 µm2 area, and 1.75 clock cycles delay. sultana et al. [29] have offered a coplanar rfa circuit, which is a coplanar rfa circuit. this rfa circuit has 420 cells, 136.080 μm2 area. heikalabad et al.[30] have offered an rfa circuit that is illustrated in figure 11. a novel reversible multilayer full adder circuit designe in qca technology 445 fig. 11 layout of the rfa circuit in [30] this coplanar rfa circuit has 80 cells, 0.12 μm2 area, and 0.75 clock cycles delay. aliabadian et al.[31] have offered an rfa, which is shown in figure 12. fig. 12 layout of the rfa circuit in [31] 446 r. faraji, a. rezai this is a coplanar circuit. it has 36 cells, 0.027 area μm2, 0.75 clock cycles latency. although these rfa circuits provide suitable performance, the performance of the rfa circuit can be improved. 3. the suggested rfa circuit this section proposed a new three-layer rfa circuit based on the hn gate structure. figure 13 displays the rfa block diagram. a hn b c 0 p =a q = b sum = a b c carry out= (a b)c ab d fig. 13 block diagram of the proposed rfa using hn gate the inputs in this block diagram are denoted by a, b, c, and d=0. the outputs are shown by p, q, sum, and carry out that are calculated as follows. q=b p=a (8) sum=a⊕b⊕c carry out=(a⊕b) c⊕ab figure 14 displays the developed rfa circuit based on the hn gate as building block. (a) a novel reversible multilayer full adder circuit designe in qca technology 447 (b) (c) (d) a b v c d=0 v v v+ p q sum = a b c carry= (a b)c ab d (e) fig. 14 suggested rfa a) 3 layers, b) 1st layer, c) 2nd layer, d) 3rd layer e) quantum circuit the quantum cost of the suggested rfa circuit is qc=6. there are two garbage outputs p, q, and a constant input in the proposed rfa circuit. 4. results and comparison the functionality of the suggested rfa circuit is verified using the qcadesigner tool version 2.0.3. the utilized parameters for simulation are displayed in table 1. table 1 the utilized parameters parameter value number of samples radius of effect relative permittivity clock shift clock amplitude factor clock high clock low layer separation convergence tolerance maximum iterations per sample 12,800 65.000000 12.900000 0.000000e+000 2.000000 9.800000e-22 3.800000e-22 11.500000 0.001000 100 448 r. faraji, a. rezai figure 15 displays the results for the suggested rfa circuit. fig. 15 results of the suggested rfa circuit based on our results that are shown in figures15, the rfa circuit are correctly worked. the latency of the developed rfa circuit is 0.75 clock cycles. table 2 summarizes the results of the suggested rfa circuit compared to other rfa circuits. a novel reversible multilayer full adder circuit designe in qca technology 449 table 2 the qca rfa circuits comparisons reference com (# of cells) cla (µm2) tla (µm2) aug (%) lat (clock cycles) clk (clock phases) adc (µm2 ×clock phases) alc (µm2 ×clock cycles2) cross wiring [27] 228 0.073872 0.28 26.38 1.75 7 13.72 0.49 single layer [32] 351 0.113724 0.41 27.73 1.50 6 14.76 0.615 single layer [28] 129 0.041796 0.13 32.15 1.75 7 6.37 0.2275 single layer [29] 420 0.13608 136.080 0.1 single layer [33] 268 0.086832 0.54 16.08 single layer [16] 80 0.02592 0.12 21.6 0.75 3 1.08 0.09 single layer [31] 36 0.011664 0.027 43.2 0.75 3 0.243 0.02025 single layer [34] 47 0.015228 0.020 76.14 1.5 6 0.72 0.03 multilayer [35] 73 0.023652 0.040 59.13 0.75 3 0.36 0.03 multilayer this paper 40 0.01296 0.016 81 0.75 3 0.144 0.012 multilayer it should be noted that tla, com, cla, aug, lat and clk show total area, complexity or cell count, cell area, area usage, used clock cycles and used clock phases, respectively. moreover, alc and adc are computed as follows. adc = area × delay2 (9) alc = area × latency (10) table 3 summarizes the results of the suggested rfa circuit percentage of improvement to other rfa circuits. table 3 the qca rfa circuits percentage of improvement reference cla (µm2) tla (µm2) adc (µm2 ×clock phases) alc (µm2 ×clock cycles2) [27] 82.45% 94.28% 98.95% 97.55% [32] 88.60% 96.09% 99.02% 98.04% [28] 68.99% 87.69% 97.73% 94.72% [29] 90.47% 99.98% [33] 85.07% 97.03% [16] 50% 86.66% 40.74% 86.66% [31] 11.11% 40.74% 80% 40.74% [34] 14.89% 20% 60% 60% [35] 45.20% 60% 60% 60% these improvements are shown in figure 16. 450 r. faraji, a. rezai fig. 16 results of the suggested rfa circuit percentage of the improvement compared to other rfa circuits based on the results, the suggested rfa provides advantages in comparison with previous rfa circuits in [16, 27-29, 32-35], in terms of com, cla, tla, aug, alc, and adc. the only rfa circuit that has slightly better results regarding cla and com compared to our rfa circuit, is the rfa circuit suggested in [31]. note that our rfa has 40.74%, 46.67%, 40.74%, and 40.74% improvements in comparison with suggested rfa in [31] with regard to alt, aug, alc, and adc, respectively. energy analysis and estimate is a recent development in qca circuit analysis. so, the energy is estimated for our rfa using qcadesigner-e. table 4 displays the estimated energy for our rfa using qcadesigner-e at different temperatures. table 4 calculated energy for the suggested rfa circuit temperature avg_ebath (mev) error-avg_ebath (mev) sum_ebath (mev) error-sum_ebath (mev) 1 ◦k 1.74 -1.71 1.91 -1.88 5 ◦k 1.63 -1.58 1.80 -1.74 10 ◦k 1.92 -1.85 2.11 -2.04 15 ◦k 1.95 -1.82 2.15 -2.01 the estimated energy for our rfa at different temperatures is shown in figures 17 and 18. fig. 17 sum and average energy of our rfa circuit for different temperatures a novel reversible multilayer full adder circuit designe in qca technology 451 fig. 18 error of sum and average energy of our rfa circuit for different temperatures we contrast the calculated energy in our suggested rfa circuit with previous rfa circuits. the calculated energy for the rfa circuits at 1° k is compiled in table 5. table 5 calculated energy for the rfa circuits reference avg_ebath (mev) error-avg_ebath (mev) sum_ebath (mev) error-sum_ebath (mev) [16] 3.79 -3.63 4.17 -4.00 [31] 1.42 -1.37 1.56 -1.51 this paper 1.74 -1.71 1.91 -1.88 based on these results, the suggested rfa outperforms the rfa suggested in [16]. although the rfa suggested in [31] requires slightly lower energy than our rfa, our rfa has advantages with regard to alt, alc, aug, and adc in comparison with suggested work in [31]. 5. conclusion the qca technology is one exciting emerging nanotechnology. digital circuits can be designed using this technique as an alternative to cmos technology. furthermore, the design of digital circuits heavily relies on the adder circuit. this paper suggested a new 3layer rfa circuit. the design goal of this article was to improve the performance of the rfa circuit. the design strategy is use of cost-effective architecture and path planning design, which can reduce design costs such as area, adc, and alc. the qcadesigner tool was utilized to verify the functionality of our rfa circuit. the designed rfa circuit has 40 cells, 0.016 μm2 area, and 0.75 clock cycles delay, according to the results. these findings also show that our rfa circuit has benefits over other rfa circuits. 452 r. faraji, a. rezai referencs [1] e. e. swartzlander, h. cho, i. kong, and s.-w. kim, "computer arithmetic implemented with qca: a progress report", in proceedings of the 2010 conference record of the forty fourth asilomar conference on signals, systems and computers, ieee, 2010, pp. 1392–1398. [2] d. rairigh, "limits of cmos technology scaling and technologies beyond-cmos", institute of electrical and electronics engineers, inc, 2005. [3] a. abu el-seoud, m. el-banna, and m. hakim, "on modelling and characterization of single electron transistor", international journal of electronics, vol. 94, no. 6, pp. 573–585, 2007. [4] r. singh and m. k. pandey, "design and optimization of sequential counters using a novel reversible gate," in proceedings of the 2016 international conference on computing, communication and automation (iccca), ieee, 2016, pp. 1393–1398. [5] v. k. sharma, "single layer adder/subtractor using qca nanotechnology for nanocomputing operations", engineering research express, vol. 4, no. 4, p. 045002, 2022. [6] r. landauer, "irreversibility and heat generation in the computing process", ibm journal of research and development, vol. 5, no. 3, pp. 183–191, 1961. [7] j. c. das and d. de, "novel design of reversible priority encoder in quantum dot cellular automata based on toffoli gate and feynman gate", the journal of supercomputing, vol. 75, no. 10, pp. 6882–6903, 2019. [8] s. r. heikalabad and m. r. gadim, "design of improved arithmetic logic unit in quantum-dot cellular automata", international journal of theoretical physics, vol. 57, pp. 1733–1747, 2018. [9] m. s. islam and a. n. bahar, "a review on reversible logic gates and it’s qca implementation", international journal of computer applications, vol. 975, p. 8887. [10] m. mohammadi, m. mohammadi, and s. gorgin, "an efficient design of full adder in quantum-dot cellular automata (qca) technology", microelectronics journal, vol. 50, pp. 35–43, 2016. [11] i. amlani, a. o. orlov, g. l. snider, c. s. lent, w. porod, and g. h. bernstein, "experimental demonstration of electron switching in a quantum-dot cellular automata (qca) cell", superlattices and microstructures, vol. 25, no. 1-2, pp. 273–278, 1999. [12] a. h. majeed, b. salih, m. bin zainal, and d. b. m. nor, "power efficient optimal structure cam-cell in qca technology", indian j sci technol, vol. 12, no. 37, pp. 1–6, 2019. [13] r. faraji and a. rezai, "design of a multilayer reversible alu in qca technology", the journal of supercomputing, pp. 1–24, 2024. [14] a. rezai, d. aliakbari, and a. karimi, "novel multiplexer circuit design in quantum-dot cellular automata technology", nano communication networks, vol. 35, p. 100435, 2023. [15] a. roohi, r. f. demara, and n. khoshavi, "design and evaluation of an ultra-area-efficient fault-tolerant qca full adder", microelectronics journal, vol. 46, no. 6, pp. 531–542, 2015. [16] m. norouzi, s. r. heikalabad, and f. salimzadeh, "a reversible alu using hng and ferdkin gates in qca nanotechnology", international journal of circuit theory and applications, vol. 48, no. 8, pp. 1291–1303, 2020. [17] j. pal, m. noorallahzadeh, j. s. sharma, d. bhowmik, a. k. saha, and b. sen, "regular clocking scheme based design of cost-efficient comparator in qca", indonesian journal of electrical engineering and computer science, vol. 21, no. 1, pp. 44–55, 2021. [18] h. gaur, t. sasamal, a. singh, a. mohan, and d. pradhan, "reversible logic: an introduction", design and testing of reversible logic, pp. 3–18, 2020. [19] m. noorallahzadeh, m. mosleh, and k. datta, "a new design of parity-preserving reversible multipliers based on multiple-control toffoli synthesis targeting emerging quantum circuits", frontiers of computer science, vol. 18, no. 6, p. 186908, 2024. [20] m. noorallahzadeh, m. mosleh, s. s. ahmadpour, j. pal, and b. sen, "a new design of parity preserving reversible vedic multiplier targeting emerging quantum circuits", international journal of numerical modelling: electronic networks, devices and fields, p. e3089, 2023. [21] m. noorallahzadeh, m. mosleh, n. k. misra, and a. mehranzadeh, "a novel design of reversible quantum multiplier based on multiple-control toffoli synthesis", quantum information processing, vol. 22, no. 4, p. 167, 2023. [22] m. noorallahzadeh and m. mosleh, "efficient designs of reversible shift register circuits with low quantum cost", journal of circuits, systems and computers, vol. 30, no. 12, p. 2150215, 2021. [23] m. noorallahzadeh, m. mosleh, and s.-s. ahmadpour, "efficient designs of reversible synchronous counters in nanoscale", circuits, systems, and signal processing, vol. 40, no. 11, pp. 5367–5380, 2021. [24] s. seyedi, a. otsuki, and n. j. navimipour, "a new cost-efficient design of a reversible gate based on a nano-scale quantum-dot cellular automata technology", electronics, vol. 10, no. 15, p. 1806, 2021. a novel reversible multilayer full adder circuit designe in qca technology 453 [25] m. mohammadi and m. eshghi, "behavioral description of quantum v and v+ gates to design quantum logic circuits," in proceedings of the 2008 5th international multi-conference on systems, signals and devices, ieee, 2008, pp. 1–5. [26] m. noorallahzadeh and m. mosleh, "efficient designs of reversible bcd to ex-3 converter with low quantum cost in nanoscale", international journal of quantum information, vol. 18, no. 05, p. 2050020, 2020. [27] e. taherkhani, m. h. moaiyeri, and s. angizi, "design of an ultra-efficient reversible full addersubtractor in quantum-dot cellular automata", optik, vol. 142, pp. 557–563, 2017. [28] j.-c. jeon, "minimized energy consumption based qca reversible adder", int j civ eng technol, vol. 10, no. 2, pp. 702–714, 2019. [29] m. sultana, a. chaudhuri, d. sengupta, and a. chaudhuri, "toffoli netlist and qca implementations for existing four variable reversible gates: a comparative analysis", microsystem technologies, vol. 25, no. 5, pp. 1987-2009, 2019. [30] n. heikalabad and f. salimzadeh, "a reversible alu using hng and ferdkin gates in qca nanotechnology", int j circ theor appl, pp. 1–13, 2020. [31] r. aliabadian, m. golsorkhtabaramiri, s. r. heikalabad, and m. k. sohrabi, "design of a reversible alu using a novel coplanar reversible full adder and mf gate in qca nanotechnology", optical and quantum electronics, vol. 55, no. 2, p. 191, 2023. [32] z. mohammadi and m. mohammadi, "implementing a one-bit reversible full adder using quantum-dot cellular automata", quantum information processing, vol. 13, pp. 2127–2147, 2014. [33] r. singh, n. k. misra, and b. bhoi, "implementation of non-restoring reversible divider using a quantum-dot cellular automata," in proceedings of the computational intelligence in data mining: proceedings of the international conference on cidm 2017, 2017, springer, pp. 459–469. [34] y. z. barughi and s. r. heikalabad, "a three-layer full adder/subtractor structure in quantum-dot cellular automata", international journal of theoretical physics, vol. 56, pp. 2848–2858, 2017. [35] k. navi, r. farazkish, s. sayedsalehi, and m. r. azghadi, "a new quantum-dot cellular automata fulladder", microelectronics journal, vol. 41, no. 12, pp. 820–826, 2010. 12560 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 211 227 https://doi.org/10.2298/fuee2401211u © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper a comprehensive comparative study of machine learning models for predicting cryptocurrency yüksel akay ünvan, cansu ergenç finance and banking department, business school, ankara yildirim beyazit university, ankara, turkey orcid ids: yüksel akay ünvan https://orcid.org/0000-0002-0983-1455 cansu ergenç https://orcid.org/0000-0002-4722-0911 abstract. this study aims to find the best performing model in predicting cryptocurrencies using different machine learning models. in our study, an analysis was performed on various cryptocurrencies such as aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, usdcoin and xrp. decision trees, random forests, knearest neighbours (knn), gradient boost machine (gbm), lightgbm, xgboost, catboost, artificial neural networks (ann), convolutional neural networks (cnns), recurrent neural networks (rnns) and short term memory networks in long comparisons (lstm) models were used. the performance of the models is compared with mean squared error (mse), root mean square error (rmse) and mean absolute error (mae). the study results show that there is no single model that consistently outperforms others for all cryptocurrencies. models such as xgboost and random forests show consistent and strong performance across different cryptocurrencies, proving their robustness in this particular use case. deep learning algorithms, including convolutional neural networks (cnns), recurrent neural networks (rnns) and long short term memory networks (lstms), show significant accuracy in predicting some cryptocurrencies. key words: cryptocurrencies, machine learning forecasting model, prediction methods, efficiency 1. introduction cryptocurrencies have recently attracted a great deal of attention as a distinctive and everchanging type of investment. investors and researchers have turned to cryptocurrencies due to their significant profit potential and market volatility. the ability to predict the prices of cryptocurrencies is crucial for investors, traders and financial analysts who want to make informed decisions in this rapidly growing industry. machine learning and deep learning techniques have become powerful tools for accurately predicting cryptocurrency prices in received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: yüksel akay ünvan finance and banking department, business school, ankara yildirim beyazit university, ankara, turkey e-mail: akay.unvan@gmail.com https://orcid.org/0000-0002-0983-1455 https://orcid.org/0000-0002-4722-0911 mailto:akay.unvan@gmail.com 212 y. a. ünvan, c. ergenç recent years. these approaches are able to effectively capture complex temporal correlations and non-linear patterns in data collected from bitcoin prices. each cryptocurrency and its underlying platform contain different features and applications that contribute to the diverse environment of the cryptocurrency world. aave is a decentralised finance (defi) protocol that allows users to borrow and lend different cryptocurrencies [1]. in this system, the lender earns interest on digital assets in liquidity pools. the borrower can obtain a loan by pledging collateral. the creators originally designed binancecoin as a utility token for the binance cryptocurrency exchange, and later expanded its use. binancecoin's uses include powering binance's decentralised applications (dapps) and paying transaction fees on the binance exchange [2]. cardano is a blockchain platform that aims to provide a more secure and scalable infrastructure for the development of decentralised applications and smart contracts [3]. cosmos is a decentralised network of independent blockchains powered by byzantine fault tolerance (bft) consensus algorithms [4]. dogecoin, initially created as a meme coin, gained significant value and popularity by experiencing significant increases in its exchange rate [5]. ethereum is a decentralised platform that enables smart contracts and decentralised applications to be created and run without any downtime, fraud, control or interference from a third party. solana is a high-performance blockchain that enables fast, secure and scalable decentralised applications and cryptocurrencies [6]. tether is a type of cryptocurrency, known as a stablecoin, designed to provide a stable value by being pegged to a reserve asset such as the us dollar. tron is a blockchain-based decentralised platform that aims to create a free, global digital content entertainment system with distributed storage technology. usdcoin is a stablecoin cryptocurrency whose value is directly pegged to the us dollar. xrp is the native digital asset of xrp ledger, a blockchain created by ripple. in this study, analyses were conducted on various cryptocurrencies such as aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, usdcoin and xrp. decision trees, random forests, k-nearest neighbours (knn), gradient boost machine (gbm), lightgbm, xgboost, catboost, artificial neural networks (ann), convolutional neural networks (cnns), recurrent neural networks (rnns), and short-term memory networks in long comparisons (lstm) models were used. the organisation of the rest of this paper is as follows: section 2 contains a literature review on forecasting methods and cryptocurrencies. section 3 presents machine learning forecasting methods. the results of the study are presented in section 4. finally, final comments are given in section 5. 2. literature review in the digitalizing world, the use of cryptocurrencies for investment purposes has become widespread in recent years. for this reason, the number of studies on cryptocurrencies in the literature is increasing day by day. there are many studies on bitcoin and other cryptocurrencies. bitcoin, the groundbreaking cryptocurrency, has been extensively studied in terms of its preference and function in many areas [7]. analyzes of bitcoin often focus on economic policy uncertainty and volatility behavior, with insights into its potential as a financial instrument. furthermore, the application of machine learning for ransomware classification in bitcoin transactions has been evaluated, highlighting the importance of robust prediction models in the context of cryptocurrency security [8]. in general, studies have focused on bitcoin, but other types of cryptocurrencies have also been examined. gray prediction approach was used to predict the closing price of cryptocurrencies such as bionic, cardano, dogecoin, a comprehensive comparative study of machine learning models for predicting cryptocurrency 213 ethereum, xrp [9]. another study examines price distortion and information efficiency before and during the covid-19 outbreak using bitcoin, bnb, cardano, ethereum and xrp cryptocurrencies [10]. the use of the cardano formula in data-driven gradient flows highlights the mathematical foundations for cryptocurrencies beyond bitcoin [11]. the feasibility of including different cryptocurrencies in investment portfolios for diversification was assessed and the potential benefits of diversification were highlighted, especially in the case of terra [12]. in the field of sentiment analysis, comparative analyses using the support vector machine and naive bayes algorithm have been performed on cryptocurrencies, shedding light on the potential applications of cryptocurrencies as digital goods for trading and investment assets. in addition, cryptocurrency price prediction based on arima, random forest, and lstm algorithms has been investigated; lstm shows superior prediction accuracy compared to random forest and arima models [13]. we enhance the existing body of research by doing a thorough examination of several machine learning models applied to a diverse set of cryptocurrencies. in contrast to typical research that concentrate on a solitary digital currency or a restricted range of models, we conduct a comparative analysis of the effectiveness of several models such as decision trees, random forests, knn, gbm, lightgbm, xgboost, catboost, ann, cnns, rnns, and lstms across twelve different cryptocurrencies. this provides a more holistic understanding of the applicability and robustness of these models in cryptocurrency prediction, addressing a significant gap in the literature. 3. methodology in this study, decision trees, random forests, knn, ann, cnns, rnn, lstms, gbm, lightgbm, xgboost and catboost models are used in the comparisons. table 1 provides a comprehensive list of the cryptocurrencies and prediction models that were used in the research. table 1 cryptocurrencies and prediction models used in this paper cryptocurrencies models aave decision trees binancecoin random forests bitcoin gradient boosting machines (gbm) cardano xgboost cosmos lightgbm dogecoin catboost ethereum k-nearest neighbors (knn) solana neural networks tether convolutional neural networks (cnns) tron recurrent neural networks (rnns) usdcoin long short-term memory networks (lstms) xrp the dataset contains date, open, high, low, close, volume and market cap information for aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, 214 y. a. ünvan, c. ergenç usdcoin and xrp cryptocurrencies. table 2 provides explanations of the values in the data set. the date range of each cryptocurrency is given in table 3. table 2 characteristics of the dataset variable description date date of observation open opening price on the given day high highest price on the given day low lowest price on the given day close closing price on the given day volume volume of transactions on the given day market cap market capitalization in usd table 3 the range of dataset cryptocurrencies dataset cryptocurrencies dataset aave 05.10.2020 06.07.2021 ethereum 08.08.2015 06.07.2021 binancecoin 26.07.2017 06.07.2021 solana 11.04.2020 06.07.2021 bitcoin 29.04.2013 06.07.2021 tether 26.02.2015 06.07.2021 cardano 02.10.2017 06.07.2021 tron 14.09.2017 06.07.2021 cosmos 15.03.2019 06.07.2021 usdcoin 09.10.2018 06.07.2021 dogecoin 16.12.2013 06.07.2021 xrp 05.08.2013 06.07.2021 3.1. decision trees model the theoretical background of decision trees models includes internal nodes that represent attribute tests [14]. the tree structure includes branches that reflect test results and leaf nodes that represent class labels [15]. decision trees are widely used due to their simplicity and efficiency in knowledge discovery, which are important factors. decision tree algorithms are used in areas such as comparing bitcoin and ethereum [16], predicting the closing price of cryptocurrencies [17]. figure 1 shows the fit of cryptocurrencies to the decision trees model. the practical application of these models to cryptocurrency prediction is diverse, with each sub-figure providing empirical evidence of the model predictive capacity for a specific cryptocurrency. the sub-figures in figure 1 reflect the adaptability of decision trees across different cryptocurrencies, highlighting the model performance in terms of accuracy and its ability to capture trends within the highly volatile cryptocurrency market. 3.2. random forests model random forests models are a robust and adaptive learning approach widely used in many different domains [18]. the theoretical structure of random forests is a machine learning methodology that improves prediction accuracy and reduces overfitting by combining many decision trees [19]. figure 2 shows the fit of cryptocurrencies to the random forests model. random forest algorithm has applications in areas such as financial fraud detection [20], bank failure prediction [21], and estimating cryptocurrency value [22]. a comprehensive comparative study of machine learning models for predicting cryptocurrency 215 fig. 1 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors fig. 2 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 216 y. a. ünvan, c. ergenç 3.3. k-nearest neighbours model k-nearest neighbours (knn) models is a widely used and fundamental approach in the field of machine learning and pattern recognition [23]. the knn method is a nonparametric machine learning technique that does not assume any particular data distribution and uses nearby examples to generate predictions [24]. the knn method is widely used in stock price prediction [25,26]. figure 3 shows the fit of cryptocurrencies to the knn model. fig. 3 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 3.4. artificial neural networks model artificial neural networks (ann) models are powerful and flexible machine learning models that have attracted great interest in various fields [27]. artificial neural networks (anns) are computational models that replicate the architecture and functioning of the human brain [28]. these systems are specifically designed to process complex data inputs and perform tasks such as classification, regression and pattern recognition. anns are highly valuable in a variety of applications including document recognition, reinforcement learning and predictive modelling due to their flexibility and malleability [29]. figure 4 shows the fit of cryptocurrencies to the ann model. a comprehensive comparative study of machine learning models for predicting cryptocurrency 217 fig. 4 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 3.5. recurrent neural networks (rnns) model recurrent neural networks (rnns) models are highly efficient and widely used deep learning models that have received significant acclaim in various fields [30]. figure 5 shows the fit of cryptocurrencies to the rnns model. fig. 5. (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 218 y. a. ünvan, c. ergenç rnns are computer models that efficiently capture the patterns and dynamics of sequences using cyclic connections between nodes in the network. rnns provide a quality that makes them well suited for tasks involving the manipulation of sequential data [31]. rnns have shown remarkable effectiveness in a variety of fields, including speech recognition, music classification, and the processing of time series data [32-34]. 3.6. convolutional neural networks model convolutional neural networks (cnns) models are highly effective and widely used deep learning models that have attracted great interest in various fields [35]. cnns are specifically designed to process structured grid data such as photographs and time series data [36]. they have shown outstanding performance in a number of applications, including image identification, medical diagnostics and signal processing. figure 6 shows the fit of cryptocurrencies to the cnns model. fig. 6 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 3.7. long short-term memory networks (lstms) model long short-term memory networks (lsms) models are very effective and widely used deep learning models that have received significant attention in various fields [37]. lsms, also known as long short-term memory networks, are a special type of recurrent neural network (rnn) primarily designed to capture and comprehend long-term dependencies in sequential input [38]. lstm models have performed well for tasks such as the analysis of time series data, natural language processing and speech recognition [39, 40]. figure 7 shows the fit of cryptocurrencies to the lstms model. furthermore, lstms have been used in analysing time series data for various purposes such as increasing load shedding, predicting instantaneous load and predicting deformation in concrete dams. their ability to collect temporal correlations and model complex time series data has made them very useful models for modelling data in areas such as engineering and energy management. a comprehensive comparative study of machine learning models for predicting cryptocurrency 219 fig. 7 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 3.8. gradient boosting machines (gbm) model gradient boosting machines (gbm) model is defined as a machine learning method that creates robust prediction models by combining the weak prediction model [41]. cpm is used in areas such as estimating credit risks [42], estimating bank failure [43], and estimating the value of cryptocurrency [44]. figure 8 shows the fit of cryptocurrencies to the gbm model. fig. 8 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 220 y. a. ünvan, c. ergenç 3.9. xgboost model the xgboost models machine learning approach, commonly referred to as extreme gradient boosting, is widely used in various areas of academic literature [45]. the theoretical infrastructure of the xgboost model is based on the application of boosting techniques to create a robust prediction model. the xgboost model is used in areas such as credit card fraud detection [46], corporate financial management risk model creation [47], and stock market volatility [48]. figure 9 shows the fit of cryptocurrencies to the xgboost model. fig. 9 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 3.10. lightgbm model lightgbm models short for light gradient boosting machine, is a highly effective machine learning model that can be applied in multiple domains [49]. figure 10 shows the fit of cryptocurrencies to the lightgbm model. lightgbm is a machine learning technique that uses boosting concepts to create an accurate predictive model, similar to the xgboost model [50]. lightgbm has applications in predicting stock and cryptocurrency prices [51-53]. 3.11. catboost model the catboost models algorithm has attracted much attention due to its ability to efficiently process categorical data and deliver outstanding performance in various applications. catboost algorithm uses gradient boosting [54]. according to prokhorenkova et al. (2018), the catboost technique has shown better results in terms of quality compared to existing gradient boosting applications on widely recognised datasets [55]. catboost algorithm is used in the field of finance, such as comparing the performance of stock market strategies [56] and predicting the trends of stock indexes [57]. figure 11 shows the fit of cryptocurrencies to the catboost model. a comprehensive comparative study of machine learning models for predicting cryptocurrency 221 fig. 10 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors catboost has shown to be a powerful and versatile gradient boosting method, demonstrating its effectiveness in handling categorical data, achieving outstanding prediction accuracy, and being applicable across several domains. the tool's ability to handle complex data types and provide understandable insights makes it a valuable asset for predictive modeling and interdisciplinary research. fig. 11 (a) of constituent aave. (b) of constituent binancecoin. (c) of constituent bitcoin. (d) of constituent cardano. (e) of constituent cosmos. (f) of constituent dogecoin. (g) of constituent ethereum. (h) of constituent solana. (i) of constituent tether. (j) of constituent tron. (k) of constituent usdcoin. (l) of constituent xrp. source: figure by authors 222 y. a. ünvan, c. ergenç 4. results in this section, the results obtained using the methods of decision trees, random forests, k-nearest neighbors (knn), gradient boosting machine (gbm), lightgbm, xgboost, catboost, artificial neural networks (ann), convolutional neural networks (cnns), recurrent neural networks (rnns), and long short-term memory networks (lstms) have been examined. the results have been compared using the mse, rmse, and mae criteria. the mathematical expressions are given below. mse = 21 ˆ( )i iy y n − (1) rmse = 21 ˆ( )i iy y n − (2) mae = 1 ˆ iy y n − (3) the mse, rmse, and mae values obtained for the cryptocurrencies aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, usdcoin, and xrp are provided in table 4 and table 5. table 4 mse, rmse and mae value for aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, usdcoin, and xrp aave binancecoin mse rmse mae mse rmse mae decision trees 418.708 20.462 13.388 54.428 7.377 1.865 random forests 229.562 15.151 9.78 20.659 4.545 1.398 knn 463.522 21.529 15.641 43.932 6.628 2.309 gbm 275.487 16.597 11.52 17.365 4.167 1.399 lightgbm 285.093 16.884 12.097 24.586 4.958 1.517 xgboost 33.012 5.745 3.647 5.822 2.412 0.758 catboost 1013.619 31.837 21.028 66507.27 257.89 172.51 ann 316.178 17.781 13.629 14.794 3.846 1.416 cnns 0.0007 0.027 0.017 0.014 0.121 0.079 rnns 0.0034 0.058 0.042 0.109 0.33 0.215 lstms 0.015 0.125 0.107 0.02 0.144 0.096 bitcoin cardano mse rmse mae mse rmse mae decision trees 76726.6 276.995 109.151 0.001 0.037 0.012 random forests 53947.48 232.265 90.785 0.0004 0.021 0.008 knn 248067.6 498.063 213.448 0.0011 0.033 0.015 gbm 73052.82 270.282 118.201 0.0004 0.02 0.008 lightgbm 115722.3 340.179 113.87 0.0008 0.029 0.01 xgboost 81810.14 286.02 88.537 0.0001 0.01 0.004 catboost 3.32e+08 18207.52 10177.2 0.328 0.573 0.573 ann 66318.21 257.523 117.74 0.0004 0.021 0.012 cnns 0.0001 0.012 0.008 0.0018 0.042 0.034 rnns 0.002 0.044 0.024 0.008 0.094 0.067 lstms 0.0022 0.047 0.024 0.005 0.073 0.051 a comprehensive comparative study of machine learning models for predicting cryptocurrency 223 cosmos dogecoin mse rmse mae mse rmse mae decision trees 0.469 0.685 0.355 0.00001 0.003 0.0005 random forests 0.192 0.438 0.238 0.00006 0.002 0.0004 knn 0.418 0.646 0.388 0.00004 0.006 0.0009 gbm 0.2145 0.463 0.248 0.000008 0.002 0.0004 lightgbm 0.213 0.461 0.265 0.00006 0.008 0.0011 xgboost 0.039 0.198 0.112 0.00005 0.002 0.0003 catboost 104.81 10.237 8.834 0.019 0.137 0.056 ann 0.117 0.342 0.201 0.00001 0.004 0.0013 cnns 0.003 0.052 0.041 0.031 0.177 0.071 rnns 0.013 0.115 0.099 0.0096 0.098 0.039 lstms 0.0022 0.047 0.039 0.0009 0.031 0.012 table 5 mse, rmse and mae value for aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, usdcoin, and xrp ethereum solana mse rmse mae mse rmse mae decision trees 547.753 23.404 9.83 1.101 1.049 0.564 random forests 376.747 19.409 8.327 0.626 0.791 0.419 knn 1379.609 37.143 16.824 1.986 1.409 0.67 gbm 386.734 19.665 8.967 0.906 0.952 0.524 lightgbm 444.698 21.087 8.776 0.929 0.964 0.964 xgboost 211.86 14.555 6.643 0.917 0.958 0.283 catboost 835884.7 914.267 519.195 254.684 15.958 14.328 ann 309.621 17.596 8.443 0.697 0.835 0.474 cnns 0.0005 0.023 0.012 0.0021 0.046 0.029 rnns 0.0002 0.014 0.007 0.004 0.064 0.037 lstms 0.0015 0.039 0.019 0.016 0.127 0.121 tether tron mse rmse mae mse rmse mae decision trees 0.00002 0.005 0.002 0.00002 0.005 0.0016 random forests 0.00001 0.003 0.001 0.00001 0.003 0.0012 knn 0.00001 0.003 0.001 0.00003 0.005 0.0019 gbm 0.00001 0.003 0.001 0.00002 0.004 0.0013 lightgbm 0.00001 0.003 0.001 0.00003 0.005 0.0014 xgboost 0.00001 0.003 0.001 0.00001 0.003 0.0007 catboost 0.000006 0.002 0.001 0.0002 0.015 0.008 ann 0.0005 0.022 0.016 0.00003 0.006 0.0033 cnns 0.0002 0.0168 0.0108 0.0005 0.022 0.015 rnns 0.017 0.132 0.095 0.0002 0.014 0.01 lstms 0.008 0.089 0.072 0.0008 0.029 0.017 usdcoin xrp mse rmse mae mse rmse mae decision trees 0.00002 0.005 0.002 0.002 0.049 0.011 random forests 0.00001 0.003 0.001 0.001 0.033 0.008 knn 0.00001 0.003 0.001 0.002 0.050 0.014 gbm 0.00001 0.003 0.001 0.001 0.038 0.009 lightgbm 0.00003 0.003 0.001 0.005 0.072 0.012 xgboost 0.00001 0.003 0.001 0.002 0.051 0.008 catboost 0.00002 0.001 0.001 0.005 0.071 0.034 ann 0.00007 0.027 0.019 0.001 0.038 0.012 cnns 0.00005 0.022 0.017 0.0003 0.019 0.0115 rnns 0.002 0.046 0.041 0.0002 0.014 0.008 lstms 0.003 0.056 0.054 0.0003 0.018 0.0113 224 y. a. ünvan, c. ergenç when the results of aave and binancecoin were examined, it was seen that xgboost showed the best performance. when mse values are examined, it is seen that the best performing model for bitcoin is random forest and xgboost. it is seen that the catboost model shows the worst performance for bitcoin. it can be said that all prediction models for cardano, cosmos and dogecoin give good results. however, similar to the bitcoin results, it can be said that random forest and xgboost performed well in cardano, cosmos and dogecoin. when ethereum values are examined, it is seen that the best performing model is random forest. on the other hand, it is seen that the knn model shows the worst performance for ethereum. when solana values are examined, it is seen that the random forest model performs well, similar to other cryptocurrencies. after random forest, the best performing models are gbm, xboost and lightgbm, respectively. it is possible to say that tether performs well in all models. it can be said that the reason for this is due to the stable nature of tether as a stablecoin. additionally, when tether's graphics are examined, it is seen that it fits all models well. it was concluded that catboost, random forests, knn, gbm, lightgbm and xgboost models fit very well, respectively. when tron and usdcoin are examined, it is seen that the performance of the models is good. the worst performing model for tron appears to be cnns. it is seen that the best performing models are random forests and xgboost. for usdcoin, random forests, knn, gbm and xgboost models appear to show the best results. it can be seen that the worst performing model is lstms. when xrp is examined, it is seen that there are large differences between the performances of the models. cnns, rnns and lstms appear to perform best. it can be seen that lightgbm and catboost perform the worst. models such as ann, cnns, rnns and lstms show different performances in different cryptocurrencies. it can be interpreted that cnns perform well for aave, binancecoin and bitcoin. it appears to perform worse for cardano, cosmos and dogecoin. it can be said that rnns and lstm models generally perform well, but are not the best performing models in the cryptocurrencies examined. 5. conclusion in this study, decision trees, random forests, knn, gbm, lightgbm, xgboost, catboost, ann were used to predict the closing price of aave, binancecoin, bitcoin, cardano, cosmos, dogecoin, ethereum, solana, tether, tron, usdcoin and models such as cnns, rnns and lstms have been used. the efficiencies of these models were compared using mse, rmse and mae criteria. the results show that there is no single good model for all cryptocurrencies. different models appear to fit well in different cryptocurrencies. stablecoins such as tether appear to fit well with many models. the accuracy of deep learning models such as anns, cnns, rnns, and lstms appears to be strong on cryptocurrencies such as aave, binancecoin, and bitcoin. although classical machine learning models such as xgboost and random forests are mostly reliable, it has been concluded that the choice of model should depend on the different characteristics of each cryptocurrency. while our study provides valuable insights into the performance of predictive models for cryptocurrencies, it is important to acknowledge its limitations. in the beginning, the cryptocurrency market is inherently volatile, and the success of the models may be affected by rapidly evolving external variables. future research in this area could explore: investigating the development of real-time predictive models that can adapt to rapidly changing market conditions. integrating external data sources, such as market sentiment analysis or news sentiment, to enhance predictive accuracy. assessing the risks a comprehensive comparative study of machine learning models for predicting cryptocurrency 225 associated with cryptocurrency investments, considering the limitations of predictive models. this study builds on and extends the findings of previous research in the field of cryptocurrency prediction, reinforcing the idea that model selection should be tailored to the specific characteristics of each cryptocurrency. our results are consistent with the broader consensus that cryptocurrency prediction is a multifaceted challenge and that no single model can excel in this complex environment. as a result, this research serves as a valuable reference for investors, policymakers, and researchers who want to delve into the intricacies of cryptocurrency price prediction. while there is no crystal ball in the cryptocurrency world, our study sheds light on various machine learning models that can help make informed decisions in this ever-evolving environment. references [1] f. alonso and m. á. sicilia, "cryptocurrency curated news event database from gdelt," research square (research square), oct. 2022. [2] f. d’amario and milos ciganovic, "forecasting cryptocurrencies log-returns: a lasso-var and sentiment approach," arxiv (cornell university), sep. 2022. [3] s. a. manavi, g. jafari, s. rouhani, and m. ausloos, "demythifying the belief in cryptocurrencies decentralized aspects. a study of cryptocurrencies time cross-correlations with common currencies, commodities and financial indices," physica a: statistical mechanics and its applications, vol. 556, p. 124759, oct. 2020. [4] l. j. tjahyana, "studi netnografi pola komunikasi jaringan komunitas cryptocurrency dogecoin pada twitter," jurnal komunikatif, vol. 10, no. 1, pp. 16–37, jul. 2021. [5] s. ichsani and n. s. mahendra, "return and risk analysis on cryptocurrency assets," kontigensi : jurnal ilmiah manajemen, vol. 10, no. 1, pp. 149–160, jun. 2022. [6] b. ebner, l. eid, and b. klar, "cauchy or not cauchy? new goodness-of-fit tests for the cauchy distribution," arxiv (cornell university), jun. 2021. [7] r. kher, s. terjesen, and c. liu, "blockchain, bitcoin, and icos: a review and research agenda," small business economics, jan. 2020. [8] q. a. al-haija and a. a. alsulami, "high performance classification model to identify ransomware payments for heterogeneous bitcoin networks,” electronics, vol. 10, no. 17, p. 2113, aug. 2021. [9] p. k. singh, a. k. pandey, and s. c. bose, “a new grey system approach to forecast closing price of bitcoin, bionic, cardano, dogecoin, ethereum, xrp cryptocurrencies," quality & quantity, jul. 2022. [10] l. h. s. fernandes, e. bouri, j. w. l. silva, l. bejan, and f. h. a. de araujo, "the resilience of cryptocurrency market efficiency to covid-19 shock," physica a: statistical mechanics and its applications, p. 128218, oct. 2022. [11] j.-f. pietschmann and m. schlottbom, "data driven gradient flows," arxiv (cornell university), may 2022. [12] l. juškaitė and l. gudelytė-žilinskienė, "investigation of the feasibility of including different cryptocurrencies in the investment portfolio for its diversification," journal business, management and economics engineering, vol. 20, no. 01, pp. 172–188, may 2022. [13] k. he, q. yang, l. ji, j. pan, and y. zou, "financial time series forecasting with the deep learning ensemble model," mathematics, vol. 11, no. 4, p. 1054, jan. 2023. [14] l. rokach and o. z. maimon, data mining with decision trees: theory and applications. new jersey etc.: world scientific, cop, 2015. [15] b. gupta, a. rawat, a. jain, a. arora, and n. dhami, "analysis of various decision tree algorithms for classification in data mining," international journal of computer applications, vol. 163, no. 8, pp. 15– 19, apr. 2017. [16] a. singh, "a new investment opportunity: bitcoin & ethereum cryptocurrency," international journal of scientific research in engineering and management, vol. 06, no. 10, oct. 2022. [17] a. a. oyedele, a. o. ajayi, l. o. oyedelec, s. a. bello, and k. o. jimoh, "performance evaluation of deep learning and boosted trees for cryptocurrency closing price prediction," expert systems with applications, p. 119233, nov. 2022. [18] h. anantharaman, a. mubarak, and b.t shobana, "modelling an adaptive e-learning system using lstm and random forest classification," nov. 2018. [19] m. fratello and r. tagliaferri, "decision trees and random forests," pp. 374–383, jan. 2016. 226 y. a. ünvan, c. ergenç [20] c. liu, y. chan, s. h. alam kazmi, and h. fu, "financial fraud detection model: based on random forest," international journal of economics and finance, vol. 7, no. 7, jun. 2015. [21] z. rustam and g. s. saragih, "predicting bank financial failures using random forest," ieee xplore, may 01, 2018. [22] a. inamdar, a. bhagtani, s. bhatt, and p. m. shetty, "predicting cryptocurrency value using sentiment analysis," ieee xplore, may 01, 2019. https://ieeexplore.ieee.org/abstract/document/9065838 (accessed mar. 30, 2022). [23] z. zhang, "introduction to machine learning: k-nearest neighbors," annals of translational medicine, vol. 4, no. 11, pp. 218–218, jun. 2016. [24] y. lee, c.-h. wei, and k.-c. chao, "non-parametric machine learning methods for evaluating the effects of traffic accident duration on freeways," archives of transport, vol. 43, no. 3, pp. 91–104, sep. 2017. [25] y. a. ünvan, and c. ergenç "stock market forecasting with machine learning: the case of bist-100 index," international research journal of modernization in engineering technology and science, jun. 2023. [26] j. behera, a. k. pasayat, h. behera, and p. kumar, "prediction based mean-value-at-risk portfolio optimization using machine learning regression algorithms for multi-national stock markets," engineering applications of artificial intelligence, vol. 120, p. 105843, apr. 2023. [27] m. chen, u. challita, w. saad, c. yin, and m. debbah, "artificial neural networks-based machine learning for wireless networks: a tutorial, " ieee communications surveys & tutorials, vol. 21, no. 4, pp. 3039–3071, 2019. [28] m. c. nwadiugwu, "neural networks, artificial intelligence and the computational brain," arxiv.org, dec. 25, 2020. https://arxiv.org/abs/2101.08635 [29] v. uraikul, c. w. chan, and p. tontiwachwuthikul, "artificial intelligence for monitoring and supervisory control of process systems," engineering applications of artificial intelligence, vol. 20, no. 2, pp. 115–131, mar. 2007. [30] s. islam et al., "a comprehensive survey on applications of transformers for deep learning tasks," expert systems with applications, pp. 122666–122666, nov. 2023. [31] s. zhang et al., "architectural complexity measures of recurrent neural networks," neural information processing systems, 2016. [32] p. b. weerakody, k. w. wong, g. wang, and w. ela, "a review of irregular time series data handling with gated recurrent neural networks," neurocomputing, vol. 441, pp. 161–178, jun. 2021. [33] a. shewalkar, d. nyavanandi, and s. a. ludwig, "performance evaluation of deep neural networks applied to speech recognition: rnn, lstm and gru," journal of artificial intelligence and soft computing research, vol. 9, no. 4, pp. 235–245, oct. 2019. [34] e. brophy, z. wang, q. she, and t. ward, "generative adversarial networks in time series: a survey and taxonomy," arxiv:2107.11098 [cs], jul. 2021, available: https://arxiv.org/abs/2107.11098 [35] a. khan, a. sohail, u. zahoora, and a. s. qureshi, "a survey of the recent architectures of deep convolutional neural networks,” artificial intelligence review, vol. 53, apr. 2020. [36] x. lu et al., "fault diagnosis for photovoltaic array based on convolutional neural network and electrical time series graph," energy conversion and management, vol. 196, pp. 950–965, sep. 2019. [37] m. al-smadi, b. talafha, m. al-ayyoub, and y. jararweh, "using long short-term memory deep neural networks for aspect-based sentiment analysis of arabic reviews," international journal of machine learning and cybernetics, vol. 10, no. 8, pp. 2163–2175, mar. 2018. [38] g. liu and j. guo, "bidirectional lstm with attention mechanism and convolutional layer for text classification," neurocomputing, vol. 337, pp. 325–338, apr. 2019. [39] l. yao and y. guan, "an improved lstm structure for natural language processing," ieee xplore, dec. 01, 2018. https://ieeexplore.ieee.org/document/8690387 (accessed dec. 25, 2021). [40] m. k. nammous and k. saeed, "natural language processing: speaker, language, and gender identification with lstm," advances in intelligent systems and computing, pp. 143–156, jan. 2019. [41] n. aziz, e. a. p. akhir, i. a. aziz, j. jaafar, m. h. hasan, and a. n. c. abas, "a study on gradient boosting algorithms for development of ai monitoring and prediction systems," ieee xplore, oct. 01, 2020. https://ieeexplore.ieee.org/document/9247843 (accessed sep. 13, 2022). [42] y. c. chang, k.-h. chang, and g.-j. wu, "application of extreme gradient boosting trees in the construction of credit risk assessment models for financial institutions," applied soft computing, vol. 73, pp. 914–920, dec. 2018. [43] p. carmona, f. climent, and a. momparler, "predicting failure in the u.s. banking sector: an extreme gradient boosting approach," international review of economics & finance, vol. 61, pp. 304–323, may 2019. [44] j. s. heo, d.-h. kwon, j.-b. kim, y.-h. han, and c.-h. an, "prediction of cryptocurrency price trend using gradient boosting," kips transactions on software and data engineering, vol. 7, no. 10, pp. 387–396, oct. 2018. https://arxiv.org/abs/2101.08635 https://arxiv.org/abs/2107.11098 a comprehensive comparative study of machine learning models for predicting cryptocurrency 227 [45] t. kavzoglu and a. teke, "predictive performances of ensemble machine learning algorithms in landslide susceptibility mapping using random forest, extreme gradient boosting (xgboost) and natural gradient boosting (ngboost)," arabian journal for science and engineering, jan. 2022. [46] t. r. noviandy, g. m. idroes, a. maulana, i. hardi, e. s. ringga, and rinaldi idroes, "credit card fraud detection for contemporary financial management using xgboost-driven machine learning and data augmentation techniques," indatu journal of management and accounting, vol. 1, no. 1, pp. 29–35, sep. 2023. [47] r. qin, "the construction of corporate financial management risk model based on xgboost algorithm," journal of mathematics, vol. 2022, pp. 1–8, apr. 2022. [48] y. wang and y. guo, "forecasting method of stock market volatility in time series data based on mixed model of arima and xgboost," china communications, vol. 17, no. 3, pp. 205–221, mar. 2020. [49] f. alzamzami, m. hoda, and a. e. saddik, "light gradient boosting machine for general sentiment classification on short texts: a comparative evaluation," ieee access, vol. 8, pp. 101840–101858, 2020. [50] a. shehadeh, o. alshboul, r. e. al mamlook, and o. hamedat, "machine learning models for predicting the residual value of heavy construction equipment: an evaluation of modified decision tree, lightgbm, and xgboost regression," automation in construction, vol. 129, p. 103827, sep. 2021. [51] x. sun, m. liu, and z. sima, "a novel cryptocurrency price trend forecasting model based on lightgbm," finance research letters, dec. 2018. [52] r. xu, y. chen, t. xiao, j. wang, and x. wang, "predicting the trend of stock index based on feature engineering and catboost model," international journal of financial engineering, p. 2150027, may 2021. [53] l. tian, l. feng, l. yang, and y. guo, "stock price prediction based on lstm and lightgbm hybrid model," the journal of supercomputing, feb. 2022. [54] a. a. ibrahim, r. l., m. m., r. o., and g. a., "comparison of the catboost classifier with other machine learning methods," international journal of advanced computer science and applications, vol. 11, no. 11, 2020. [55] l. prokhorenkova, g. gusev, a. vorobev, a. v. dorogush, and a. gulin, "catboost: unbiased boosting with categorical features," neural information processing systems, 2018. https://proceedings.neurips.cc/paper/2018/ hash/14491b756b3a51daac41c24863285549-abstract.html [56] mousavi and h. nikoomaram, "a comparative study of the performance of stock trading strategies based on lgbm and catboost algorithms.," international journal of finance & managerial accounting, vol. 7, no. 26, pp. 63–75, jul. 2022 [57] r. xu, y. chen, t. xiao, j. wang, and x. wang, "predicting the trend of stock index based on feature engineering and catboost model," international journal of financial engineering, p. 2150027, may 2021. https://proceedings.neurips.cc/paper/2018/hash/14491b756b3a51daac41c24863285549-abstract.html https://proceedings.neurips.cc/paper/2018/hash/14491b756b3a51daac41c24863285549-abstract.html 10819 facta universitatis series: electronics and energetics vol. 36, no 1, march 2023, pp. 43-51 https://doi.org/10.2298/fuee2301043r © 2023 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications pinku ranjan1, swati yadav2, amit bage3 1department of electrical / electronic engineering, atal bihari vajpayee-indian institute of information technology and management (abv-iiitm), gwalior, india 2department of electronics & telecommunication engineering, college of engineering roorkee, uttarakhand-247667, india 3department of electronics and communication engineering, national institute of technology, hamirpur, india abstract. in this manuscript, a compact mimo antenna for wireless application has been presented. the proposed antenna consists of the f-shaped radiator with the circular slot in the center and a rectangular ground plane on the other side of the substrate. the proposed antenna has the overall size of 48 × 48 mm2. the antenna is designed to work on two frequency bands from 1.5 to 2.3 ghz, and 3.7 to 4.2 ghz, having the resonating frequency of 1.8 ghz and 3.9 ghz respectively. the diversity performance of the antenna is also observed by using a variety of parameters like envelop correlation coefficient (ecc), diversity gain (dg), total active reflection coefficient (tarc), etc. the value of ecc is 0.02, which shows good diversity performance of the antenna. in order to validate the simulated and measured results, the proposed antenna has been fabricated and shows good agreement with the each other. key words: mimo antenna; envelop correlation coefficient (ecc); total active reflection coefficient (tarc) 1. 1. introduction in worldwide terms, wireless communication is considered to be the fastest growing technology. in 2020, it is expected that 70 percent of the world’s population will have at least a smart phone. the improvement in the generation of wireless communication in terms of data rate, antenna size and higher gain are required. a technology that fulfills the higher demands of such future wireless communication is the use of multiple input multiple output (mimo) antennas. in mimo antenna design technology, multiple antennas are used on both transmitting and receiving side in order to increase the radio link capacity. in this technique, more than received may 26, 2022; revised july 14, 2022, and july 19, 2022; accepted july 25, 2022 corresponding author: pinku ranjan abv-indian institute of information technology and management (iiitm), gwalior, madhya pradesh, india e-mail: pinkuranjan@iiitm.ac.in 44 p. ranjan, s. yadaw, a. bage one data signal is simultaneously transmitted or received over the same radio channel. by using the mimo technology, the signal capturing capacity of receiver is increased by allowing antennas to combine their data streams that are arriving from different paths at different times. mimo is the most important technique in most of the research and will play a key role in the next generation wireless systems, including 5g networks. for the mimo antenna system, isolation between the two radiating elements is very important. therefore, two radiators should be designed in such a way that the isolation between them is less than –15 db. to ensure the isolation between the antenna elements with a miniaturized size is a big challenge for the antenna designers. in the past few years many researches have proposed different mimo antennas with different techniques [1]–[10]. in [11], antenna with two-element semi-ring along with uwb amplifier is presented to design mimo antenna. an annular slot antenna and two shorts in the opposite direction placed at 45 degrees between the microstrip lines are used to achieve an isolation [12]. in 2018 [13], a. dkiouak et al. presented a compact mimo antenna for wireless application based on two symmetrical monopoles with a t-shape junction. the t-shape junction is used to enhance the isolation between two antennas. to abandon the reactive coupling connection between the different antenna elements of mimo antenna, the technique of parasitic elements is used [14]. in [15], a high isolated compact 2 x 2 mimo antenna is designed using pifa and dgs has been used to improve the inter port isolation. in this proposed design, a simple f–shaped radiator is used to get the dual band function of the mimo antenna for the wireless communication. the f–shaped radiator is chosen to get the desired band of application. the antenna has been designed to work at two different frequency bands ranging from 1.5 2.3 ghz and 3.7 4.2 ghz, and having the resonating frequency of 1.8 ghz and 3.9 ghz respectively. the numerical analysis has been carried out using high frequency simulation software (hfss). the organization of the manuscript is as follows. in section 2, antenna design and configuration are presented with its design steps. in section 3, simulated and measured return loss, isolation between ports and radiation pattern are presented. in section 4, diversity performance is evaluated in terms of ecc, tarc, and dg. finally, conclusion is provided in section 5. 2. antenna design and configuration 2.1. methodology the flowchart of the proposed antenna from design specification to fabrication and measurement is shown in fig. 1. the design methodology of the proposed mimo antenna starts from the antenna design specification. after the design specification a single element antenna is designed with the desired frequency response. the single element antenna is modified to a double element square patch mimo antenna. in order to achieve the desired mimo characteristics and frequency ranges, f-shaped mimo antenna is designed with a circular slot. in the next step, the optimization of all the parameters of the designed antennas is done to check its performance. once the desired performance is achieved, the proposed antenna is fabricated and measured. dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications 45 fig. 1 flow diagram represents antenna specification to fabrication 2.2. design parameter the front view and back view of the proposed antenna with its dimensions are shown in fig. 2. the antenna has been designed on fr-4 dielectric substrate having thickness = 1.6 mm, copper thickness = 0.035 mm, dielectric constant = 4.4, and loss tangent = 0.02. the overall dimensions of the proposed antenna are 48 × 48 mm2. the antenna consists of two radiating elements of f-shape, which are placed horizontally to each other on top side of substrate along with the rectangular ground plane, which is designed on the bottom side of the dielectric substrate. the design steps of the proposed antenna are shown in fig. 3. in order to achieve the desired characteristics, there are three design steps. at first, a square (a) (b) fig. 2 (a) top view and (b) bottom view of proposed antenna where l = 48, lp1= 23, lp2= 41, lp3= 4, lp4= 6, lp5= 5, w= 48, wp1=3, wp2 = 13, wp3 = 4, wp4 = 5, wp5 = 8 and lg1 =20 (all in mm) 46 p. ranjan, s. yadaw, a. bage shape radiator is designed along with the microstrip feed line as shown in fig. 3(a). the square shape antenna shows the dual band performance with 1.4 – 2.3 ghz and 3.9 – 4.4 ghz bands, which is not the desired operating frequency bands. also, for the square shaped antenna, the second operating band shows low impedance matching. (a) (b) (c) fig. 3 evolution of the proposed antenna (a) antenna 1 (b) antenna 2 (c) antenna 3 as a result, two f-shape slots are etched from the radiator in the next stage as shown in fig. 2(b). the two f-slots etched from rectangular patch with different dimensions. this f–shaped antenna operates in the 1.5–2.3 ghz and 3.8–4.3 ghz frequency ranges, which is not the required lte and sub-6 5g band. in order to achieve the desired frequency band, the second operating band has been shifted to the lower frequency. in order to shift at lower frequency bands, a circular slot is etched from the upper part of the rectangular patch along with f-slot. using this circular slot the proposed antenna achieved the desired dual band performance with two operating bands from 1.8–2.3 ghz and 3.7–4.2 ghz. the width of the microstrip feed is kept same for all the three design and is equal to 3 mm. the gap between the two radiators is 8 mm. the simulated s-parameters for the fig. 3 is shown in fig. 4. the fig. 4(a) reveals that antenna 3 which is the f–shaped structure with circular slot shows good performance. it is also clear from the fig. 4(b), the designed f–shaped antenna shows the good impedance matching over the two frequency bands with the center (a) (b) fig. 4 (a) simulated s12/s21 parameter versus frequency for antenna 1, 2 and 3 and (b) simulated s11/s22 parameters versus frequency for antenna 1, 2 and 3 dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications 47 frequency of 1.8 ghz and 3.9 ghz, and the isolation between the two antennas is less than –5, and –15 db for the two bands. to analyze the behavior of antenna current densities for the two different frequencies are determined. for calculating the current densities at two resonating frequencies port 1 is excited. the current distribution of the proposed antenna at 1.8 and 3.9 is shown in fig. 5. (a) (b) fig. 5 surface current densities at (a) 1.8 ghz and (b) 3.9 ghz the figure reveals that, at 1.8 ghz resonant frequency the surface current is uniformly distributed at the feed line and the lower part of the f-shaped radiator. for the frequency of 3.9 ghz the current is uniformly distributed at the lower strip of the f-shaped structure. 3. result and discussion in order to validate the numerical analysis, the proposed dual band mimo antenna has been fabricated using pcb prototype machine. the fabricated top view and bottom view are shown in fig. 6. the fabricated antenna is measured using agilent n5230a vector network analyzer. (a) (b) fig. 6 fabricated photograph of the proposed dual band mimo antenna, (a) top view, and (b) bottom view 48 p. ranjan, s. yadaw, a. bage the simulated and measured s-parameters (s11/s22 and s12/s21) are compared and shown in fig. 7. the figure shows that they are in good agreement with each other. the measurement of radiation patterns is performed inside an anechoic chamber for each element, by keeping the other element terminated with matched load. the radiation pattern at two different frequencies is calculated for the two principal planes (e-plane and hplane) as shown in fig. 8. (a) (b) fig. 7 the comparison of simulated and measured results (a) s11/s22 db and (b) s12/s21 db (a) (b) fig. 8 simulated radiation pattern for proposed antenna at (a) at 1.8 ghz and (b) 3.9 ghz dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications 49 the fig. 8(a) shows the simulated radiation pattern of the proposed antenna at 1.8 ghz for e and h plane, and the radiation pattern at the 3.9 ghz for e and h plane frequency is shown in the fig. 8(b). the figure evidences that the antenna possesses the consistent radiation pattern for both frequency bands. fig. 9 shows the gain of the presented antenna for the two different frequency bands. from the figure, it is clear the designed antenna possesses the gain of around 4 db and 2 db for the 1.8 ghz and 3.9 ghz frequency respectively. fig. 9 simulated gain verses frequency graph for the proposed dual band mimo antenna a comparison of the characteristics of proposed mimo antenna with few other reported mimo antenna [11, 12, 13, 14 and 15] is tabulated in table 1. table 1 comparison of presented antenna with previous literature ref. impedance bw (ghz) isolation (db) size (in mm) electrical size in guided wavelength ecc [11] 1.8–5.5 -12 50×90×0.76 1.13× 2.0486 × 0.0173 0.33 [12] 3–12 -15 80×80×0.6 4.19 × 4.19 × 0.031 [13] 2.35–3.05 and 5.12–5.51 -12 43×37×1.6 0.811× 0.69 × 0.0302 0.001 [14] 3.2–3.7, 5.1–5.6, 6.7 7.5 -30 70×50×0.6 1.6886 × 1.2061 × 0.0145 [15] 5.2 – 6 -25 100×50×0.8 3.95 × 1.97 × 0.0316 <0.5 proposed antenna 1.5 – 2.3 and 3.3 –4.2 -15 48×48×1.6 0.6377 × 0.6377 × 0.0213 <0.002 4. diversity performance for mimo antenna, the diversity performance shows how efficiently two antennas work individually. the diversity performance can be calculated using different parameters such as envelop correlation coefficient (ecc), diversity gain (dg), total active reflection coefficient (tarc), etc. the capacity to receive information individually by each antenna is shown through ecc. to achieve better performance, the value of ecc should be less than 0.2, and it can be calculated using the method proposed in [16]: 𝐸𝐶𝐶 = |𝑆11 ∗ 𝑆12 + 𝑆21 ∗ 𝑆22| 2 (1 − |𝑆11| 2 − |𝑆21| 2)(1 − |𝑆21| 2 − |𝑆12| 2)⁄ (1) 50 p. ranjan, s. yadaw, a. bage the diversity gain (dg), can be calculated using the envelop correlation coefficient. for the proposed dual band mimo antenna, the diversity gain can be calculated using [16]: 𝐷𝐺 = √1 − |𝐸𝐶𝐶|2 (2) the simulated ecc and dg of the proposed antenna is shown in fig. 10. the figure shows that ecc of the proposed antenna is below 0.002 at both frequency bands which ensure the good diversity performance of the presented mimo antenna. in the same figure, the diversity gain of the proposed antenna is above 9.9 db at the resonating frequencies. in the transmission and reception process of mimo antenna systems, working of multiple antennas together will affect the overall operating bandwidth and efficiency. the effect of multiple antenna elements on each other is shown through total active reflection coefficient (tarc). tarc can be defined as square root of the ratio of total reflected power to the total incident power and is apparent return loss of the overall mimo antenna system. for dual-band mimo system, the value of tarc can be calculated using the equation given in [17]: 𝑇𝐴𝑅𝐶 = √(𝑆11 + 𝑆12) 2 + (𝑆21 + 𝑆22) 2 √2⁄ (3) the value of tarc should be <0 db for the mimo communication. the simulated tarc of the proposed mimo is shown in fig. 11. the figure reveals at both resonant frequencies the tarc is below -25 db. fig. 11 simulated tarc of the proposed dual band mimo antenna fig. 10 simulated ecc and dg of the proposed antenna dual band mimo antenna for lte, 4g and sub–6 ghz 5g applications 51 5. conclusion this manuscript introduces a small mimo antenna for lte 4g and the sub-6 ghz 5g channel. the suggested antenna operates effectively in two frequency bands having bandwidths of 500 mhz and 600 mhz respectively and ranging from 1.8–2.3 ghz and 3.7– 4.3 ghz. the measured and simulated results of the proposed antenna are compared, which shows the good agreement with each other. the antenna also shows good diversity performance with low envelop correlation coefficient, good diversity gain and low value of tarc. the radiation pattern at e–plane and h–plane for the antenna at both the resonating frequency shows the omnidirectional pattern. acknowledgement: the author would like to acknowledge the iit kanpur for doing the antenna fabrication at their institute. references [1] b. x. wang, w. q. huang and l. l. wang, "ultra-narrow terahertz perfect light absorber based on surface lattice resonance of a sandwich resonator for sensing applications", rsc advances, vol. 7, pp. 42956-42963, 2017. [2] d. hu, t. meng, h. wang, y. ma and q. zhu, "ultra-narrow-band terahertz perfect metamaterial absorber for refractive index sensing application", results phys., vol. 19, p. 103567, 2020. [3] f. yan, q. li, h. tian, z. wang and l. li, "ultrahigh q-factor dual-band terahertz perfect absorber with dielectric grating slit waveguide for sensing", j. phys. d: appl. phys., vol. 53, p. 235103, 2020. [4] q. xie, g. dong, b. wang and w. huang, "design of quad-band terahertz metamaterial absorber using a perforated rectangular resonator for sensing applications", nanoscale res. lett., vol. 13, p. 137, 2018. [5] m. janneh, a. de marcellis, e. palange, a. t. tenggara and d. byun, "design of a metasurface-based dualband terahertz perfect absorber with very high q-factors for sensing applications", opt. commun., vol. 416, pp. 152-159, 2018. [6] w. yin, z. shen, s. li, l. zhang and x. chen, "a three-dimensional dual-band terahertz perfect absorber as a highly sensitive sensor", front. phys., vol. 9, p. 665280, 2021. [7] x. hu, g. xu, l. wen, h. wang, y. zhao, y. zhang, d. r. s. cumming and q. chen, "metamaterial absorber integrated microfluidic terahertz sensors", laser photonics rev., vol. 10, pp. 962-969, 2016. [8] l. cong, s. tan, r. yahiaoui, f. yan, w. zhang and r. singh, "experimental demonstration of ultrasensitive sensing with terahertz metamaterial absorbers: a comparison with the metasurfaces", appl. phys. lett., vol. 106, p. 031107, 2015. [9] a. kovačević, m. potrebić and d. tošić, "sensitivity analysis of possible thz virus detection using quad-band metamaterial sensor", in proceedings of the ieee 32nd international conference on microelectronics (miel), niš, serbia, 2021, pp 107-110. [10] n. akter, m. m. hasan and n. pala, "a review of thz technologies for rapid sensing and detection of viruses including sars-cov-2", mdpi biosensors, vol. 11, p. 349, 2021. [11] n. shen, p. tassin, t. koschny and c. soukoulis, "comparison of goldand graphene-based resonant nanostructures for terahertz metamaterials and an ultra-thin graphene-based modulator", phys. rev. b, vol. 90, no. 11, p. 115437, 2014. [12] wipl-d pro 17, 3d electromagnetic solver, wipl-d d.o.o., belgrade, serbia, 2021. available online: http://www.wipl-d.com (accessed on 29 april 2022). [13] b. dadonaite, b. gilbertson, m. l. knight, s. trifković, s. rockman, a. laederach, l. e. brown, e. fodor and d. l. v. bauer, "the structure of the influenza a virus genome", nat. microbiol., vol. 4, no. 11, pp. 1781-1789, 2019. [14] m. amin, o. siddiqui, h. abutarboush, m. farhat and r. ramzan, "a thz graphene metasurface for polarization selective virus sensing", carbon, vol. 176, pp. 580-591, 2021. [15] b. wang, a. sadeqi, r. ma, p. wang, w. tsujita, k. sadamoto, y. sawa, h. r. nejad, s. sonkusale, c. wang et al, "metamaterial absorber for thz polarimetric sensing", in proceedings of the spie, terahertz, rf, millimeter, and submillimeter-wave technology and applications xi, san francisco, ca, usa, 2018, vol. 10531, pp. 1-7. [16] f. lan, f. luo, p. mazumder, z. yang, l. meng, z. bao, j. zhou, y. zhang, s. liang, z. shi et al, "dualband refractometric terahertz biosensing with intense wave-matter-overlap microfluidic channel", biomed. opt. express, vol. 10, pp. 3789-3799, 2019. http://www.wipl-d.com/ preparation of papers in a two-column format for the 21st annual conference of the ieee industrial electronics society facta universitatis series: electronics and energetics vol. 30, no 1, march 2017, pp. 27 38 doi: 10.2298/fuee1701027z calculation model for the induced voltage in rectangular coils above conductive plates  siquan zhang 1 , nathan ida 2 1 department of electrical and automation, shanghai maritime university, shanghai, 201306, china 2 department of electrical and computer engineering, the university of akron, akron, oh, 44325-3904, usa abstract. electromagnetic ndt methods and in particular eddy currents play an important role in nondestructive testing of conducting materials. in testing conductive structures, rectangular coils are often more useful than circular coils. a particular configuration consists of two rectangular coils located above the conductive plates, one placed parallel to the plates serving as an excitation coil and the other perpendicular to the plates serving as a sensing coil. in this work we derive analytical expressions for the induced voltage variations in the pick-up coil. then the influences of the plate thickness, the exciting frequency and the moving speed of the conductor on the induced voltage variation are analyzed. the analytical calculation results are verified using the finite element method. key words: eddy current testing, conductive plates, rectangular coil, induced voltage, finite element method. 1. introduction eddy current testing (ect) techniques are widely used in testing of conductive structures with advantages of high sensitivity when testing for surface flaws [1-3]. in standard eddy current testing a circular coil carrying current is used to test the conductive specimen. the alternating current in the coil generates an alternating magnetic field, which interacts with the test specimen and generates eddy currents. however, rectangular coils are more useful than circular coils, because the rectangular coil is not axisymmetric, hence it affects the field inside the medium resulting in higher sensitivity to sub-surface flaws [4]. in spite of these advantages, rectangular coils have been seldom discussed in the literature. in this paper, we analyse a model with two rectangular coils, one serving as the exciting coil and the other is the pick-up coil, both located above the conductive plates. the conductive materials’ characteristics or parameters of flaws can be evaluated  received august 17, 2016 corresponding author: nathan ida department of electrical and computer engineering, the university of akron, akron, oh, 44325-3904, usa (e-mail: ida@uakron.edu) 28 s. zhang, n. ida from the induced voltage variation in the pick-up coil. the validity of the theoretical analysis is confirmed by the finite element method (fem). 2. theoretical analysis 2.1. analytical model fig. 1 shows two rectangular single-turn coils located above multi-layer conductive plates. the exciting coil is parallel to the surface of the conductor which coincides with the z = 0 plane. the dimensions of the exciting coil are 2a1, 2b1 and a lift-off z0. an ac harmonic current tjie  flows in the coil. the pick-up coil is parallel to the yz plane and perpendicular to the conductor, it has dimensions of 2a2, 2b2 and a lift-off z0+w2. the thickness, conductivity and permeability of the two layer conductive plate are assumed to be di, σi and μi (i =1, 2) and the conductive media are assumed to be linear, isotropic and homogeneous. 11, 22 , i 1a 1b 1d 2a 2b 0x c 20 wz  0z 0yo x y z v 2d fig. 1 filamentary rectangular coils above a multi-layer conductor to simplify the analysis, the solution region is divided into region 0, 1 and 2. in region 0 (z > 0), the incident magnetic flux density bi generated by the exciting current and the reflected magnetic flux density br generated by inducted eddy currents exist simultaneously. the incident magnetic flux density bi can be expressed by the vector potential ai as: jai 0 (1) ii ab  (2) the reflected magnetic flux density br satisfies the following: 0 rb (3) 02  rb (4) region 1 )0(  zd is the top conductive plate. the magnetic flux density b1 in this region satisfies the following: 2 1 1 1 1 1 1 1 0 b b v j b y           (5) 1 0b  (6) calculation model for the induced voltage in rectangular coils above conductive plates 29 region 2 )( dz  is the lower conductive plate. the magnetic flux density b2 in this region satisfies: 0222 2 222 2     bj y b vb  (7) 02  b (8) to solve these equations, the double fourier transform and its inverse are introduced:         dxdyezyxbzb yxj )(),,(),,(  (9)            ddezbzyxb yxj )( 2 ),,( 4 1 ),,( (10) where ξ and η are the integration variables. 2.2. incident magnetic flux density the single filamentary rectangular coil consists of four finite length wires, as shown in fig.1. by solving (1), the vector potential generated at an arbitrary point ),,( zyxp by a source point )',','( zyx in the coil can be written as:  v r dvzyxj zyxa ')',','( 4 ),,( 0   (11) where j is the current density in the coil, v is the coil segment carrying current, r is the distance of ),,( zyxp to the source point )',','( zyx as follow: 222 )'()'()'( zzyyxxr  (12) performing the fourier transform on (11), the expression of the vector potential in the region z < z0 is obtained as: '} 1 {)',','( 4 ),,( )(0 dvdxdye r zyxjza v yxj                  v zzyxj dveezyxj ' 1 )',','( 2 22 0 22 )''(0    (13) similarly, the components of the incident magnetic flux density are obtained by performing the fourier transform on (2): z a ajb y zx     , z x y aj z a b     , xyz ajajb   (14) as shown in fig. 1, the wire parallel to the x axis satisfies izyxj )',','( , 0' yy  and z  z0 < 0. substituting these into (13), the x component of the vector potential becomes:     v zzyxj x dveezyxja ' 1 )',','( 2 22 0 22 )''(0        0 0 0 22 0 ' 2 ' 22 )( 0 x x xjyj zz dxee ei     0 22 0 22 )( 0 2 yj zz e ei          )sin(2 0x 22 )( 00 22 00)sin(      zzyj eexi (15) 30 s. zhang, n. ida similarly, the wire parallel to the y axis satisfies izyxj )',','( , 0' xx  and z  z0 < 0, substituting into (13), the y components of the vector potential becomes:     v zzyxj y dveezyxja ' 1 )',','( 2 22 0 22 )''(0        0 0 0 22 0 ' 2 ' 22 )( 0 y y yjxj zz dyee ei     0 22 0 22 )( 0 2 xj zz e ei          )sin(2 0y 0 22 0 22 )( 00 )sin( xj zz e eyi        (16) the x components of the magnetic flux density can be obtained by substituting (15) and (16) into (14) as follows: )},,(),,({ 01120112 1 zbaazbaa zz a b yy y ix        22 0 )(110 )sin()sin(2      zz e baij (17) similarly, the y and z components of the magnetic flux density can be obtained as: 22 0 )(110 )sin()sin(2      zz iy e baij b (18) 22 0 )(11 22 0 )sin()sin(2      zz iz e bai b (19) the general solution for the z component of the incident magnetic flux density in region 0 is: 22    z iziz ecb (20) where the coefficients ciz are: 22 0 )sin()sin(2 11 22 0      z iz e bai c (21) 2.3. reflected magnetic flux density performing the fourier transform on (4), the reflected magnetic flux density in region 0 can be expressed as: 0)( 22 2 2    r r b z b  (22) in similar fashion, performing the fourier transform on (5) and (7), the magnetic flux density in region 1 and 2 can be expressed as: 0)( 11111 22 2 1 2    bjvj z b  (23) 0)( 22222 22 2 2 2    bjvj z b  (24) the normal component of b and the tangential components of h must be continuous on the z = 0 and z = -d planes. calculation model for the induced voltage in rectangular coils above conductive plates 31 applying the continuity of bz, we obtain zrziz bbb 1 (z = 0) (25) zz bb 21  (z = d) (26) applying the continuity of hx, we obtain 1 1 0 )(  xrxix bbb   (z = 0) (27) 2 2 1 1  xx bb  (z = d) (28) applying the continuity of hy, we obtain 1 1 0 )(  yryiy bbb   (z = 0) (29) due to the fact that 0 j , the current density jz does not exist in regions 1 and 2, and we get: xy bb 11   (30) xy bb 22   (31) the following equations are obtained from (3) z b bj ry rz     (32) z b bj rx rz     (33) following similar steps, the following equations are obtained from (6) and (8): 01 11     z b bjbj z yx  (34) 02 22     z b bjbj z yx  (35) the coefficient of the reflected magnetic flux density is obtained by solving the above equations: izd d rz c penn penn d 1 1 2 2 )1(1 )1()1(      (36) where  cos ,  sin , 22   , m 12 1   , p m m    1 1 , n   1 10 , 1111 22 1  jvj  (37) let       d d penn penn 1 1 2 2 )1(1 )1()1( (38) 32 s. zhang, n. ida the coefficient of the reflected magnetic flux density becomes:    22 0)sin()sin(2 11 22 0    z rz ebai d (39) rzrx d j d    22      22 0)sin()sin(2 110    z ebaij (40) the x component of the reflected magnetic flux density becomes: 22    z rxrx edb    22 0 )( 110 )sin()sin(2    zz ebaij (41) the x component of the reflected magnetic flux density in region 0 is obtained by performing the inverse fourier transform on (41):            )sin()sin( 2 11 2 0 baij brx  )( 0zz e   ( )j x ye d d     (42) fig. 2 shows two multi-turn rectangular coils obtained by extending the two singleturn coils shown in fig. 1 in width and length respectively. the coil parallel to the surface of the conductor is the excitation coil and the coil perpendicular to the conductor is the pick-up coil. the turns of the excitation and pick-up coil are n1 and n2 respectively. the lower surfaces of the two rectangular coils are level with each other. 11, 22 , 1d c v o 1z 1h 1w 1a 2a 2b 1b 2w 2h z x y 2d fig. 2 configuration of two multi-turn rectangular coils the reflected magnetic flux density generated by the multi-turn rectangular exciting coil shown in fig. 2 is obtained by integrating (42) with respect to the width and length as follows:     11 1 1 0 0 11 1 hz z w rx total rx dpbdz hw n b 0 1 2 1 12 j in w h           }])sin[()])sin[({ 1 0 11  w dppbpa  1 1 0 1 0{ } z h z z e dz      ( )z j x ye e d d              ddeee k hw inj yxjhzzzz )()()(1 11 2 10 ][ 2 111           (43) where calculation model for the induced voltage in rectangular coils above conductive plates 33 ][ 1 )( 0 111 11 1 0   hzz hz z z eedze     (44) 1 1 1 1 0 sin[( ) )]sin[( ) ] w k a p b p dp    )(2 )sin(])(sin[ 11111      bawba )(2 ])(sin[)sin( 11111      wbaba (45) fig. 3 shows a comparison of the variation of the reflected magnetic flux density’s x component as calculated from (43) and as simulated using maxwell 3d respectively. the results of the simulation are obtained by subtracting the x component of the magnetic flux density without the conductor from the x component of the magnetic flux density with the conductor. the points shown belong to the line between (-16,0,5) and (16,0,5) which is located below the exciting coil and above the conductive plate. it can be seen that the analytical calculation results agree with the simulated results very well. -20 -15 -10 -5 0 5 10 15 20 -40 -30 -20 -10 0 10 20 30 40 position along x axis (mm)  b x ( g a u ss ) fem fourier transform fig. 3 variations of the x component the magnetic flux density calculated from the analytical and fem simulation 3. induced voltage in pickup coil 3.1. magnetic flux penetrating through the pick-up coil to obtain the reflected magnetic flux penetrating through the multi-turn rectangular pickup coil shown in fig. 2, we first derive the reflected magnetic flux penetrating through the single-turn rectangular coil with lengths 2a2, 2b2, and assume it is located at (c, 0, zc), where zc = z1 + w2 + a2. the reflected magnetic flux penetrating through the single-turn coil is obtained by integrating (43) on the area of coil as: 34 s. zhang, n. ida 2 2 2 2 c c z a b total r rx x cz a b dz b dy           1 11 2 10 2 k hw inj        cje  ][ )( 111  hzz ee   }{ 2 2 dze az az zc c       dddye b b jy  2 2 }{ 22 1 11 2 10     k hw inj        ][ )( 111  hzz ee   cz e  cje  ][ 22 aa ee    2sin( )b d d  (46) then the reflected magnetic flux penetrating through the multi-turn rectangular pickup coil is obtained by integrating (46) with respect to the width and length of pickup coil as follows: 2 2 2 / 2 2 0 / 2 2 2 w c h r c h n dp dc w h        22 1 2211 2 210     k hwhw ninj        ][ )()( 111  hzzzz cc ee   }{ 2/ 2/ 2 2 dce hc hc cj         2 22 0 )()( ][{ w papa ee   dddppb })](sin[ 2  cje hkk hwhw ninj              ) 2 sin( 2 2 22 21 2211 2 210 1 2 2 1 2 2 1(2 ) (2 ) [ ] z w a z w a h e e d d             (47) where   2 22 0 2 )()( 2 )](sin[][ w papa dppbeek  22 )()( 22 )()( 22 ])[(cos])[(sin 22222222        awawawaw eewbeewb 22 22 ])[sin(])[cos( 2222        aaaa eebeeb (48) 3.2. induced voltage in the rectangular pickup coil the relationship between the magnetic flux penetrating through the pickup coil and induced voltage is:   j dt d v  (49) therefore, the induced voltage can be derived as: 0 1 2 1 2 2 2 2 2 1 1 2 2 2 sin( ) 2 j cin n k k h v e w h w h               1 2 2 1 2 2 1(2 ) (2 ) [ ] z w a z w a h e e d d             (50) 4. results the induced voltage variation of the rectangular pick-up coil is now calculated by considering the influencing factors based on the expressions derived in the previous section. the parameters of the coils and the conductive plates are given in tables 1 and 2 respectively. calculation model for the induced voltage in rectangular coils above conductive plates 35 table 1 parameters of the rectangular coil exciting coil pick-up coil a1 (mm) 12 a2 (mm) 3 b1 (mm) 12 b2 (mm) 5 z1 (mm) 1 z1 (mm) 1 w1 (mm) 2 w2 (mm) 5 h1 (mm) 8 h2 (mm) 2 turns 500 c (mm) 6 turns 300 table 2 parameters of the conductive plate top layer σ1 (s/m) 3.8×10 7 μr1 1 lower layer σ2 (s/m) 5.8×10 7 μr2 1 fig. 4 shows the induced voltage due to the conductive plates as a function of the excitation frequency. the thickness of the top-layer conductor is 200 μm and the thickness of the lower-layer is semi-infinite and both conductors are stationary. c is the distance from the center of the pick-up coil to the z axis. it can be seen from fig. 4 that the variation of the induced voltage increases with frequency. at any given exciting frequency, the pick-up coil with larger distance to the z axis has a higher induced voltage. 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 frequency (khz) r e a l p a rt o f in d u c e d v o lt a g e ( v ) c = 3 mm c = 6 mm c = 9 mm fig. 4 induced voltage in the pickup coil as a function of exciting frequency fig. 5 compares the induced voltage calculated from the analytical method and fem simulation. the analytical results are calculated as the square root of the sum of squares of the real and imaginary parts of the induced voltage. the results of the fem are the effective values of the induced voltage obtained in pick-up coil, simulated with a time-dependent formulation. 36 s. zhang, n. ida 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 frequency (khz) in d u c e d v o lt a g e i n p ic k -u p c o il ( v ) analytical method fem fig. 5 comparation of the induced voltage variation in rectangular pick-up coil from analytical and fem at different excitation frequency the induced voltages in the coil for different thicknesses of the top-layer conductor are shown in fig. 6. the excitation frequencies are fixed at 0.5, 2, and 5 khz respectively, and the conductor is stationary. the distance from the center of the pick-up coil to the z axis is fixed at 9 mm. the induced voltage variation initially increases with the thickness, then, at a specific thickness, the induced voltage reaches a maximum, followed by a decreases with increasing thickness. as can be seen from fig. 6, the higher excitation frequency produces a higher maximum at a smaller thickness, but the induced voltage decreases faster with increasing excitation frequency. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 thickness of top-layer conductor (mm) r e a l p a rt o f in d u c e d v o lt a g e ( v ) 0.5 khz 2 khz 5 khz fig. 6 induced voltage in pickup coil as a function of top-layer conductor thickness the speed characteristics are shown in fig. 7. the induced voltage variations are calculated at speeds from v = 0 to 50 m/s. the excitation frequency is fixed at 2 khz. fig. 7 shows the differences of the coils induced voltage at different speeds of the conductor relative to the calculation model for the induced voltage in rectangular coils above conductive plates 37 coils’ induced voltage when the conductor is stationary. the rectangular coils’ induced voltage variation keeps increasing with the moving speed of conductor, the maximum variation of induced voltage is achieved with the top-layer conductor of thickness 200 μm. 0 5 10 15 20 25 30 35 40 45 50 -35 -30 -25 -20 -15 -10 -5 0 moving speed of conductor (m /s) r e a l p a rt o f  v ( m v ) 50 m 100 m 200 m 1000 m fig. 7 induced voltage of pickup coil at different speed of conductor 5. conclusion a closed-form expression for the induced voltage between a pair of rectangular coils above a multi-layered conductive plate has been derived using a 2d fourier transform method. the excitation coil is parallel to the plates and the pickup coil is perpendicular to the conductor. we discussed the influencing factors on the induced voltage, such as the excitation frequency, the thickness of the top-layer conductor and the speed of the conductor. the calculation model and results can be extended and used in the forward model of quantitative detection for eddy current testing of multi-layer conductive structures. acknowledgment: the authors would like to thank the financial support by shanghai maritime university and the national natural science foundation of china (51175321). references [1] t. theodoulidis, n. poulakis, a. dragogias, "rapid computation of eddy current signals from narrow cracks", ndt&e international, vol. 43, pp. 13-19, 2010. [2] l. guohou, h. pingjie, c. peihua, "quantitative nondestructive estimation of deep defects in conductive structures", international journal of applied electromagnetics and mechanics, vol. 33 (3-4), pp. 12731278, 2010. [3] j.w. luquire, w.e. deeds, c.v. dodd, "alternating current distribution between planar conductors", journal of applied physics, vol.41 (10), pp. 3983-3991, 1970. [4] t.p. theodoulidis, e.e. kriezis, "impedance evaluation of rectangular coils for eddy current testing of planar media", ndt & e international, vol. 35(6), pp. 407-414, 2002. [5] y. lei, x. ma, "calculation of impedance in an eddy-current coil by numerical integration method", transactions of china electrotechnical society, vol. 11 (1), pp. 17-20, 1996. 38 s. zhang, n. ida [6] p. huang, z. wu, j. zheng, "inversion algorithms for multi-layered thickness measurement in eddy current testing", chinese journal of scientific instrument, vol. 26 (4), pp. 428-432, 2005. [7] t. theodoulidis, e. kriezis, "series expansions in eddy current nondestructive evaluation models", journal of materials processing technology, vol. 161 (5), 2005. [8] c.v. dodd, w.e. deeds, "analytical solutions to eddy current probe-coil problems", journal of applied physics, vol. 39 (6), 2829-2838, 1968. [9] y.u. yating, d.u. ping an, l.i. daisheng, "computational methods of coil impedance of eddy current sensor", chinese journal of mechanical engineering, vol. 43 (2), pp. 210-214, 2007. [10] j.-l. ren, h.-b. diao, j.-h. tang, "simulation of the lift-off effect of eddy current testing based on ansys", chinese journal of sensors and actuation, vol. 21 (6), pp. 967-971, 2008. 12766 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 39 52 https://doi.org/10.2298/fuee2501039r © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper classification of sports videos by combining resnet50 model and fine tuning pinku ranjan1, jayant kumar rai1, vaibhav singh1, anand sharma2, somesh kumar1 1department of electrical and electronics engineering, abvindian institute of information technology and management, gwalior (m.p.), india 2department of electronics and communication, motilal nehru national institute of technology allahabad, prayagraj, india orcid ids: pinku ranjan https://orcid.org/0000-0002-1422-5943 jayant kumar rai https://orcid.org/0000-0002-4183-7259 vaibhav singh n/a anand sharma https://orcid.org/0000-0001-8566-1710 somesh kumar n/a abstract. this article represents a classification of sports videos by integrating the resnet50 model and fine-tuning methods. broadcasting companies give significant importance to the classification of sports videos. that is a subclass of recognition of human action, which will clarify the context of videos. this work uses a deep neural network-based resnet50 model with a fine-tuning technique for classifying popular sports types in india into their corresponding classes. this paper considers 14 main sports badminton, basketball, boxing, cricket, football, hockey, kabaddi, swimming, shooting, table tennis, tennis, volleyball, weight lifting, and wrestling. the dataset is created to focus on sports action-based classification. fine-tuning is nothing but networking surgery. first, a pre-trained convolutional neural network model will be loaded, and then fine-tuning (network surgery) will be applied. the base model (resnet50) will be frozen, so it will not be trained via backpropagation. after finetuning, the classifier will be ready to correctly classify a sports video into its category. the training accuracy of the proposed classifier is 91.73%, and testing is done on sports videos. the classifier classifies each sports video into its class correctly. a descent confusion matrix has been pertained. key words: deep learning, resnet50, fine-tuning, computer vision, sports videos classification received june 4, 2024; revised august 16, 2024 and september 27, 2024; accepted november 10, 2024 corresponding author: pinku ranjan department of electrical and electronics engineering, abvindian institute of information technology and management, gwalior (m.p.), india e-mail: pinkuranjan@iiitm.ac.in https://orcid.org/0000-0002-1422-5943 https://orcid.org/0000-0002-4183-7259 https://orcid.org/0000-0001-8566-1710 40 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar 1. introduction sports are a significant section of transmitting channels like the internet, television, etc., and many sports videos flood everyday data servers. broadcasting companies need human resources to identify each sport manually, and it’s tough to index/identify solitary sports manually based on their class. automating the task of classifying each sports video [1-4], will make it easier for broadcasting companies to manage their activity. searching for any sports video can be done without tedious manual work. this will also help game coaches analyze a particular sports video from tons of sports video archives and help in strategy [5-9]. to classify any video, we need to analyze it sequentially; we analyze the context of a scene. many attempts have been made to classify video information concerning the scene context [13-20]. to solve a complex task in computer vision, convolution neural network (cnn) or deep learning models are very effective and are mostly used to solve computer vision problems (problems related to images and videos) [21-25]. for recognition of any sports type, only a set of actions is needed by a human being. sometimes, only surrounding elements are sufficient to recognize a sports type. sports videos are a sequence of images that develop a sports video classifier to classify them into multiple sports classes. the system needs to consider spatial and temporal information [26-30]. cnn is mostly used to extract spatial features [5] since it is very effective in extracting spatial features and to handle temporal features, recurrent neural networks are used because of their memory gates. these two models can be combined to analyze and recognize visual patterns, but combining cnn and rnn requires more computational resources. now coming to some cnn architectures, such as vgg, alexnet, googlenet, resnet, etc., are multilayered neural networks designed to analyze and recognize visual patterns straightaway from pixels of images, requiring less computational resources. fig. 1 overview of the approach [3] classification of sports videos by combining resnet50 model and fine tuning 41 fine-tuning is applied to the cnn (resnet50) model because resnet50 is a pre-trained model on the imagenet dataset. to adjust a pre-trained model—which has learned generic characteristics from a huge dataset (like imagenet)—to a particular job using new data, cnns like resnet50 must be fine-tuned. fine-tuning reduces training time and increases performance compared to starting from scratch, which takes a lot of effort and enormous datasets. we allow the model to acquire new, task-specific characteristics while utilizing its pre-existing knowledge of fundamental picture properties by freezing the early layers and updating the later ones. this method makes training faster, more accurate, and requires less data. the novelty of the proposed work is as follows: (i) integrating resnet50 with fine-tuning: to categorize sports images, especially those related to indian sports, this work interestingly combines the resnet50 model with fine-tuning approaches. (ii) sports action classification dataset: a new dataset on classifying 14 prominent sports in india according to sporting actions has been generated. (iii) high accuracy: the proposed classifier achieves an impressive training accuracy of 91.73%, highlighting its effectiveness in classifying sports videos. (iv) focussing on recognising sports action: the work emphasizes sports video categorization, which is a subclass of human action recognition. (v) freeze and fine-tune approach: the model is specialised for sports video classification, providing a new technique in this area. it is achieved by freezing the underlying resnet50 model and fine-tuning the top layers. related works are described in section ii, the collection of datasets is discussed in section iii, and section iv describes methodology, results, and conclusion in sections v and vi, respectively. 2. related works various methodologies have been used to classify sports and tv shows. these methodologies differ based on input data types like image, audio, video, etc [6]. video classification is quite like image classification. some deep learning enthusiasts are quick and treat video classification as simple, incorrect image classification. since a video contains spatial and temporal features. one can understand a video as a series of images. therefore, most deep learning enthusiasts consider a video classification task as an image classification task by considering n number of frames in a video. in [2], the authors have developed three different methods to classify sports videos two types of neural networks and texture code cues. they used their combination and performed best on neural net cues. they have only considered five different types of sports tennis, cycling, track events, swimming and yachting. in [4], support vector machine (svm), and random forest (rf) techniques have been used to classify broadcasting shows. they have classed broadcasting shows into general categories such as talk shows, sports, news, movies, cartoons, politics, animation, and, more clearly, summer and winter sports. they took 1250000 frames of general categories and 3250000 frames of summer and winter sports and got 0.80 and 0.77 f1 scores for general categories and summer and winter sports, respectively, using svm. the f1 scores are quite good, but as the dataset is large enough, there might be a chance to improve the f1 scores. a random forest (rf) with 50 trees was used. the number of trees can be increased in the rf, which makes the rf more 42 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar stable and robust. in [3], the authors said that extracting semantic information from mobile videos is difficult because of their unconstrained nature. the domain knowledge of sports videos recorded by multiple users is extracted, and after that, the classification of sports videos into soccer, basketball, football, tennis, ice hockey, or volleyball. in this paper, the approach used by authors was multi-user and multimodal, as shown in fig. 1. since in this paper, the authors have considered only six different sports types. in [7], the authors combined audio and video features to classify sports videos. first, mfcc (mel frequency cepstral coefficients) is extracted from audio, and then pca is used to reduce the features' dimensions. knearest neighbor (knn) classifier is used to classify sports types. k-fold cross-validation with k=10, a correct classification rate of 96.11%, is obtained with multimodal features. they got a satisfactory result, though only three types of sports (soccer, basketball, volleyball) were considered. the authors used the hidden markov model (hmm), a statistical markov model [8]. the overview of the proposed framework is given below in fig. 2. in this paper, the authors have proposed a framework to recognize sports events. training of neural networks becomes more difficult as it becomes deeper. so, in this paper [9], a residual learning framework has been presented to make training neural networks easier. in [5], a deep learning approach is used to classify the sports videos. the authors combined a convolutional neural network (cnn) and a recurrent neural network (rnn). cnn was used for spatial feature extraction and rnn for temporal feature extraction. they got a decent accuracy of 96.66 % but considered only five different sports classes football, cricket, tennis, basketball, and ice hockey. the combination of cnn and rnn deep learning model is a resource-hungry deep neural network model that requires ram of 32 gb, a gpu of 12 gb, and a very good processor. classification of soccer videos and events are two different tasks. in [10], the authors combined these two tasks and solved them simultaneously using a pre-trained cnn model and transfer learning, achieving an accuracy of 89%. here, the researchers only consider soccer sports. in [11], seven different sports are considered ski, football, futsal, basketball, box, swimming, and tennis. the authors proposed an ensemble classifier to classify sports videos. the ensemble classifier was built by combining 4 classifiers linear discriminant analysis, nearest neighbor, probabilistic neural network, and decision tree. literature has already been made to classify sports videos into their corresponding class. some of the research [3], [4], [7], [8] have been done using traditional machine learning models, and in this research, a smaller number of different sports types are considered. some consider only general categories of tv shows; some consider three different sports and some 5 or 7 different sports. after that, some researchers developed a deep learning approach [5], [10] to classify sports videos. they have considered only several different sports types, some of which have considered event classification in a particular sport [10]. 3. dataset collection the dataset is crucial to any machine learning/deep learning method. the performance/ accuracy of any deep learning/machine learning method depends on the dataset on which the model will be trained. in this work, 14 different types of sports are taken into consideration. so, we have collected the dataset of 14 different types of sports. google image search 2 dataset (gi2ds) is used to download the datasets of different sports classes. gi2ds queries the image from google image and is used to build an image dataset. when we classification of sports videos by combining resnet50 model and fine tuning 43 query a particular image through gi2ds, it shows all images related to the query. we need to scroll down the current window to capture the urls of the images. urls of the images are saved in a .txt file, and this .txt file is used by python code to download the images. the following fig. 3 (grid of images) shows the sports that have been considered. fig. 2 overview of the proposed framework [8] fig. 3 dataset of different sports fig. 4 distribution of data for different sports 44 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar fig. 5 the proposed flowchart for different classes fig.6 the flowchart for the prediction of accuracy 3.1. resnet50 model and its optimization process resnet50 is a deep convolutional neural network (cnn) that enhances image identification tasks and is designed with 50 layers. using "residual connections," or shortcuts that let data bypass some levels of processing, distinguish resnet50 from other models. this contributes to the resolution of the "vanishing gradients" issue, which causes networks' performance to deteriorate with depth. even with deep designs, resnet50 retains high performance by omitting some layers. optimization process: the optimization process of the resnet50 model is as follows: pre-training: large datasets like imagenet are typically used to pre-train resnet50, teaching it to recognize common characteristics like shapes, edges, and textures. fine-tuning: the model is fine-tuned for a particular goal, such as sports video categorization. how to do it is as follows: the generic features-capturing early layers are frozen, meaning they are not modified throughout training. to learn features particular to the new dataset, the subsequent layers, which oversee task-specific characteristics, use backpropagation to adapt and unfreeze. classification of sports videos by combining resnet50 model and fine tuning 45 backpropagation: the weights of the unfrozen layers are modified throughout this optimization procedure. it computes the error that results from comparing the predicted label with the actual model label, propagates this error backward through the network, and adjusts the weights to minimize the error. gradient descent: gradient descent is the optimization process used in backpropagation, which iteratively modifies the model weights to lower the loss function and enhance the model's task-specific performance. resnet50 gets optimized for the particular problem by freezing the early layers and fine-tuning the later ones while still utilizing its prior knowledge, which expedites and improves the optimization process. 3.2. preprocessing of dataset the collected dataset cannot be fed to the model directly. cleaning and preprocessing need to be done before feeding it to the model. the downloaded dataset has some irrelevant images, so these images need to be deleted. irrelevant images are deleted manually. resnet50 is a pre-trained model trained on an imagenet dataset of size (224×224). therefore, the images are converted into (224×224) size. a large amount of data leads to better performance of a deep neural network. so, we need to increase the number of images for each sports type. a tool known as data augmentation is used to increase the size of the dataset. using a data augmentation tool, the number of images for each sports type increased. shifting, zooming, and flipping have been used for data augmentation rotation. this study can further train the model, as the data is sufficient. the fig. 4 represents the distribution of data for each sports class. the graph shows that each class is evenly distributed. the proposed flowchart for different classes is shown in fig. 5. the flowchart for the accuracy prediction is shown in fig. 6. 4. methodology this section shows a proposed novel approach to classify sports videos in fig. 4. each pixel's width, height, and depth make up the three dimensions of the cnn's input layer. meanwhile, depth represents the rgb color channel, and width and height indicate the horizontal and vertical pixels. we have converted the raw sports video collection into frames to minimize computational complexity. taking part in network training. video classification is quite like image classification, considering the number of subsequent frames in a video. however, video classification is different from simple image classification. in video classification, we make some assumptions, such as, based on the semantic contents, subsequent frames are correlated in a video. the advantage of the temporal nature of videos can be considered to improve the accuracy of the actual video classifier. the proposed solution will use the resnet50 model to classify sports videos [12]. resnet50 neural network contains 50 layers. resnet50 is one of the categories of (cnn) trained on more than a million images taken from the imagenet database [9]. as an outcome, the resnet50 network has learned rich feature depictions for a broad range of images. resnet50 is deeper than visual geometry group (vgg) networks, but resnet50 has lower complexity than vgg networks 2. 46 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar 4.1. resnet model the network depth is important to represent and generalize the feature [13]. adding the convolutional layers to extend the depth of a model will not help achieve better training and generalization performance [14]. to build a deeper convolutional neural network, kaming et al. introduced residual networks [9]. a residual block of the resnet model is shown in fig. 7, which can be assumed as mapping function h(x). here, the input to the first layer is represented by x, and a residual aligning function is represented by f(x), which can be represented mathematically as f (x) = h(x) − x (1) h(x) = f (x) + x (2) fig. 7 residual block fig. 8 block diagram of the proposed methodology the shortcut connections are known as identity functions (mapping). when the models get deeper, the problem of model degradation arises. deep residual networks can effectively solve the problem of model degradation. when fine-tuning the resnet, we set trainable as equal to false, which results in f(x) = 0. by doing this, we can use the pretrained weight of the resnet model. classification of sports videos by combining resnet50 model and fine tuning 47 4.2. fine-tuning fine-tuning the pre-trained resnet50 model to this goal of sports activity recognition from video frames entails adjusting the model for 14 sports videos. using the fine-tuning method is explained in detail below: (i)pre-trained resnet50 as a feature extractor a large dataset such as imagenet was used to pre-train the resnet50 model, teaching it to extract common visual characteristics like edges, textures, and patterns. because the lowest layers of resnet50 (which identify fundamental characteristics) are probably beneficial across a broad range of visual tasks, including recognizing human motions in sports, we employ this pre-trained model for sports video classification. (ii) freezing the base layers of resnet50 basic picture properties, such as edges and textures, are captured by the lowest layers of resnet50 and are useful for various tasks. the weights of these layers do not change throughout training since they stay frozen. this guarantees the preservation of the model's general-purpose feature extraction capabilities. when working with smaller datasets, freezing layers lowers the computational burden and the chance of overfitting. (iii) backpropagation: only the weights of these recently inserted layers are adjusted via backpropagation during training; the frozen layers remain unaltered. here, it's important to make sure the model picks up on mapping sports-specific attributes—like motions or behaviors common to several sports—to the appropriate sport. (iv) parameter optimization the learning rate of the recently inserted layers is often configured to be higher than that of the frozen layers. this keeps the pre-trained weights in the frozen layers intact while enabling the model to modify the new layers' parameters efficiently. certain deeper levels of resnet50 can be gradually unfrozen once the new layers have been trained, providing additional model optimization. this makes the model more flexible and able to adjust to the unique subtleties of categorizing sports videos. (v) training the model the collection comprises video frames, or frame sequences, from fourteen different sports, including cricket, badminton, basketball, boxing, and more. the resnet50-based model is fed these preprocessed frames to be classified. every video has a label indicating the sport it is associated with. using the sports dataset, the refined model is trained. throughout the training process, the model gains the ability to link specific visual patterns, motions, and situations to the corresponding sports categories. a validation set is employed to keep an eye on the model's performance and adjust hyperparameters (such as batch size and learning rate) to avoid overfitting. (vi) performance evaluation the model is assessed using an independent test set of sports videos after training. the accuracy of the classifier is measured; in this instance, it is 91.73%, meaning that the model mostly properly identifies sports footage. 4.3. block diagram of methodology the proposed methodology is shown in fig. 8. this block diagram shows how the proposed solution will be implemented for sports video classification. first, the images are resized into (224 × 244) shapes, and the resize () function from computer vision (cv) 48 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar is used for resizing the images. these images are converted into a feature matrix. the size of the feature matrix is (224×224×3). now, the pre-trained resnet50 model has been loaded as a base model, and then the head of the model has been constructed and will be put on top of the model. the head consists of the following layers: average pooling, flattening, dropout, and dense. the base model has been frozen, so it will not be trained during backpropagation. now, the feature matrix is fed to the model. the model will be trained by learning from the feature. after training the model, the trained model is dumped into the drive. while training the model, the reducelr on plateau ( ) function is used to handle when the model gets stuck on local minima. sgd (stochastic gradient descent) function is used as an optimization function with various learning rates and decay rates to get a decent performance. 5. results and discussion in this section, the model will be trained. for training the model, google colab, a free cloud service that provides 12 gb ram, 108 gb storage, and 12 gb nvidia tesla k80 gpu that can be used continuously for up to 12 hours, has been used. confusion matrix, precision-recall, and f1 score are used as performance metrics. during the model's training, many experiments were conducted with the different values of hyperparameters. the best result is obtained from all the experiments using the hyperparameters listed in table 1. the dataset is split into an 80:20 ratio; 80% of the data is used as a training set, and 20% as a validation set. the model has been trained for 100 epochs. the history of how the training accuracy and validation accuracy vary concerning epoch number and how the loss varies are shown in fig. 9. 5.1. evaluation parameter precision, recall, and f1-score are good metrics for measuring the performance of a classification model and are listed in table 2. the classifier is trained for 14 popular sports types in india. a confusion matrix is to describe the prediction summary of a classification model. the obtained confusion matrix is shown in fig. 10. precision, recall, and f1-score are calculated [30-33] through equations (3) to (5): (i) precision (p): it is the ratio of accurately identified classes to all classes. true positive p true positive false positive = + (3) (ii) recall (r): the percentage of actual classes detected in the video compared to the overall number of classes. true positive r true positive false negative = + (4) (iii) f1 score: the f1 score represents the harmonic mean of recall and precision. 2 1 p r f p r   = + (5) classification of sports videos by combining resnet50 model and fine tuning 49 now, the prediction is done on sports videos. the dumped model has loaded and a particular sports video is fed to the model. prediction is done for each frame which leads to label flickering. so, to handle the flickering problem, the prediction results are stored in a list, and the final output is the class that is in the majority. here, the prediction for the cricket video is shown in fig. 11. table 3 compares the obtained results with some other existing results. table 1 hyperparameters hyperparameter value learning rate 0.001 decay rate 0.001/epochs patience level 5 factor to reduce the learning rate 0.3 batch size 32 table 2 precision, recall, and f1-score sports class precision recall f1-score support badminton 0.88 0.81 0.84 148 basketball 0.80 0.92 0.86 117 boxing 0.95 0.94 0.95 140 cricket 0.92 0.84 0.88 133 football 0.82 0.91 0.86 153 hockey 0.86 0.76 0.81 112 kabaddi 0.80 0.94 0.86 109 shooting 0.94 0.90 0.92 115 swimming 0.96 0.96 0.96 134 table tennis 0.94 0.89 0.91 137 tennis 0.84 0.87 0.85 138 volleyball 0.89 0.88 0.89 132 weightlifting 0.93 0.89 0.91 119 wrestling 0.87 0.85 0.86 120 fig. 9 training accuracy and loss of the dataset 50 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar fig. 10 confusion matrix fig. 11 the prediction for cricket video classification of sports videos by combining resnet50 model and fine tuning 51 table 3 comparison of the proposed work with other existing work ref. dataset model optimization techniques class accuracy output [23] open video project and yuv video sequences not given graph clustering not given not given video summarization [24] not given svm, and cnn k-mean, k-medoid two classes 90% an audio talk show [25] soccer dataset for shot, event, and tracking devnet, vgg, lstm googlenet not given multiclass not given shot segmentation, event detection, player tracking [26] youtube, cricinfo deep learning k-means clustering multiclass not given frames extracted [27] olympic games event image alexnet, vgg-16, resnet-50 transfer learning multiclass 90% olympic event identification [28] sports customizedcnn sgdm multiclass 89.75 keyframes this work 14 different sport event deep learning with fine-tuning transfer learning multiclass 91.73 14 sports type (popular in india) 6. conclusion in this paper, a sports video classifier has been developed using a pre-trained deeplearning model. fine-tuning is used, which helps in using the pre-trained weight of the model instead of training it from scratch. the proposed sports videos classifier correctly classified the sports videos (badminton, basketball, boxing, cricket, football, hockey, kabaddi, swimming, shooting, table tennis, tennis, volleyball, weight lifting, and wrestling). image data have been used for training while the prediction is done on the sports videos, and it found that the classifier can classify the sports correctly. this classifier helps broadcasting companies handle their sports data in a well-organized manner. references [1] d. brezeale and d. j. cook, "automatic video classification: a survey of the literature", ieee trans. syst. man. cybern. part c (applications and reviews), vol. 38, no. 3, pp. 416-430, 2008. [2] k. messer, w. christmas and j. kittler, "automatic sports classification", in proceedings of the ieee international conference on pattern recognition, quebec city, qc, canada, 2002, vol. 2, pp. 1005-1008. [3] f. cricri, m. j. roininen, j. leppanen, s. mate, i. d. curcio, s. uhlmann and m. gabbouj, "sport type classification of mobile videos", ieee trans. multimedia, vol. 16, no. 4, pp. 917-932, 2014. [4] p. campr, m. herbig, j. vanek and j. psutka, "sports video classification in continuous tv broadcasts", in proceedings of the 12th ieee international conference on signal processing (icsp), 2014, pp. 648-652. [5] m. a. russo, a. filonenko and k.-h. jo, "sports classification in sequential frames using cnn and rnn", in proceedings of the ieee international conference on information and communication technology robotics (ict-robot), 2018, pp. 1-3. [6] a. j. eronen, v. t. peltonen, j. t. tuomi, a. p. klapuri, s. fagerlund, t. sorsa, g. lorho and j. huopaniemi, "audio-based context recognition", ieee trans. audio, speech lang. process., vol. 14, no. 1, pp. 321-329, 2005. [7] r. gade, m. abou-zleikha, m. græsbøll christensen and t. b. moeslund, "audio-visual classification of sports types", in proceedings of the ieee international conference on computer vision workshops, 2015, pp. 51-56. 52 p. ranjan, j. k. rai, v. singh, a. sharma, s. kumar [8] v. ellappan and r. rajasekaran, "event recognition and classification in sports video",” in proceedings of the 2017 second ieee international conference on recent trends and challenges in computational models (icrtccm), 2017, pp. 182-187. [9] k. he, x. zhang, s. ren and j. sun, "deep residual learning for image recognition", in proceedings of the ieee conference on computer vision and pattern recognition, 2016, pp. 770-778. [10] y. hong, c. ling and z. ye, "end-to-end soccer video scene and event classification with deep transfer learning", in proceedings of the ieee international conference on intelligent systems and computer vision (iscv), 2018, pp. 1-4. [11] m. h. sigari, s. a. sureshjani and h. soltanian-zadeh, "sports video classification using an ensemble classifier", in proceedings of the 7th iranian ieee conference on machine vision and image processing, 2011, pp. 1-4. [12] y. xing, c. lv, h. wang, d. cao, e. velenis and f.-y. wang, "driver activity recognition for intelligent vehicles: a deep learning approach", ieee trans. veh. technol., vol. 68, no. 6, pp. 5379-5390, 2019. [13] k. simonyan and a. zisserman, "very deep convolutional networks for large-scale image recognition", arxiv preprint, arxiv:1409.1556, 2014. [14] r. k. srivastava, k. greff and j. schmidhuber, "highway networks", arxiv preprint, arxiv:1505.00387, 2015. [15] a. ekin, a. m. tekalp and r. mehrotra, "automatic soccer video analysis and summarization", ieee trans. image process., vol. 12, no. 7, pp. 796-807, 2003. [16] h. jiang, y. lu and j. xue, "automatic soccer video event detection based on a deep neural network combined cnn and rnn",” in proceedings 28th ieee international conference on tools with artificial intelligence (ictai), 2016, pp. 490-494. [17] s. j. pan and q. yang, "a survey on transfer learning", ieee trans. knowl. data eng., vol. 22, no. 10, pp. 13451359, 2009. [18] a. krizhevsky, i. sutskever and g. e. hinton, "imagenet classification with deep convolutional neural networks", in advances in neural information processing systems, 2012, pp. 1097-1105. [19] c. k. mohan and b. yegnanarayana, "classification of sport videos using edge-based features and autoassociative neural network models", signal image video process., vol. 4, no. 1, pp. 61-73, 2010. [20] c. xu, j. cheng, y. zhang, y. zhang and h. lu, "sports video analysis: semantics extraction, editorial content creation and adaptation", j. multimedia, vol. 4, no. 2, pp. 69-79, 2009. [21] j. wang, c. xu and e. chng, "automatic sports video genre classification using pseudo-2d-hmm", jinjun wang, changsheng xu and e. chng, "automatic sports video genre classification using pseudo-2d-hmm," in proceedings of the ieee 18th international conference on pattern recognition (icpr'06), hong kong, china, 2006, pp. 778-781. [22] l. li, n. zhang, l.-y. duan, q. huang, j. du and l. guan, "automatic sports genre categorization and viewtype classification over large-scale dataset",” in proceedings of the 17th acm international conference on multimedia, 2009, pp. 653-656. [23] v. chaudhary, rashmi and v. uniyal, "an effective video noise removal algorithm", int. res. j. eng. technol. (irjet), vol. 3, no. 8, pp. 2031-2034, 2016. [24] x. yunjun, "a sports training video classification model based on deep learning",” scientific programming, vol. 2021, p. 7252896, 2021. [25] s. m. daudpota, a. muhammad and j. baber. "video genre identification using clustering-based shot detection algorithm", signal, image and video process., vol. 13, pp. 1413-1420, 2019. [26] s. zhang, "detection of aerobics action based on convolutional neural network", comput. intell. neurosci., vol. 2022, p. 1857406, 2022. [27] y. i. mohamad, s. s. baraheem and t. v. nguyen, "olympic games event recognition via transfer learning with photobombing guided data augmentation", j. imaging, vol. 7, no. 2, p. 12, 2021. [28] m. ramesh and k. mahesh, "sports video classification framework using enhanced threshold based keyframe selection algorithm and customized cnn on ucf101 and sports1-m dataset", comput. intell. neurosci., vol. 2022, p. 218431, 2022. [29] n. feng et al., "sset: a dataset for shot segmentation, event detection, player tracking in soccer videos." multim. tools appl., vol. 79, pp. 28971-28992, 2020. [30] m. tabish, zur. tanooli and m. shaheen, "activity recognition framework in sports videos." multim. tools appl., vol. 83, pp. 15101-15123, 2021. [31] m. rafiq et al, "scene classification for sports video summarization using transfer learning", sensors, vol. 20, no. 6, p.1702, 2020. [32] f. wu, q. wang, j. bian, n. ding, f. lu, j. cheng, d. dou and h. xiong, "a survey on video action recognition in sports: datasets, methods and applications", ieee trans. multim., vol. 25, pp. 7943-7966, 2022. [33] d. xiao, f. zhu, j. jiang and x. niu, "leveraging natural cognitive systems in conjunction with resnet50bigru model and attention mechanism for enhanced medical image analysis and sports injury prediction", front. neurosci., vol. 17, p. 1273931, 2023. facta universitatis series: electronics and energetics vol. 31, no 1, march 2018, pp. 1 9 https://doi.org/10.2298/fuee1801001e effect of the distribution of states in amorphous in-ga-zn-o layers on the conduction mechanism of thin film transistors on its base magali estrada 1 , yoanlys hernandez-barrios 1 , oana moldovan 2 , antonio cerdeira 1 , francois lime 2 , marcelo pavanello 3 , benjamin iñiguez 2 1 sees, depto. de ingeniería eléctrica, cinvestav-ipn, méxico city, méxico 2 departament d'enginyeria electrònica, elèctrica i automàtica (deeea), universitat rovira i virgili, tarragona, spain 3 department of electrical engineering, centro universitário da fei, são paolo, brasil abstract. amorphous in-ga-zn-o thin film transistors (a-igzo tfts) have proven to be an excellent approach for flat panel display drivers using organic light emitting diodes, due to their high mobility and stability compared to other types of tfts. these characteristics are related to the specifics of the metal-oxygen-metal bonds, which give raise to spatially distributed s orbitals that can overlap between them. the magnitude of the overlap between s orbitals seems to be little sensitive to the presence of the distorted bonds, allowing high values of mobility, even in devices fabricated at room temperature. in this paper, we show the effect of the distribution of states in the a-igzo layer on the main conduction mechanism of the a-igzo tfts, analyzing the behavior with temperature of the drain current. key words: amorphous oxide semiconductor, thin-film transistor, behavior with temperature, distribution of states 1. introduction in 2004, nomura et al. [1] presented the first amorphous oxide semiconductor (aos) tfts using a novel semiconductor material at that time, the amorphous in-ga-zn-o (aigzo), which was deposited by pulse layer deposition, using a krf excimer laser and a polycrystalline in-ga-zno target. the chemical composition of the target was in:ga:zn 1.1:1.1:0.9 in atomic ratio. the authors explained, that conduction in amorphous oxide semiconductors (aoss) containing post-transition-metal cations is completely different received july 7, 2017 corresponding author: yoanlys hernandez-barrios sees, depto. de ingeniería eléctrica, cinvestav-ipn, av. ipn 2208, cp 07360, méxico city, méxico (e-mail: yhb961210@gmail.com) 2 m. estrada, y. hernandez-barrios, o. moldovan, et al. from that of covalent semiconductors as a-si:h. in a-si:h tfts, the presence of randomly distributed sp3 bonds, gives rise to a high density of both deep and tail localized states and the carrier transport is governed by hopping between localized tail states. in aoss, the conduction band has high ionicity due to spatially distributed s orbitals, which can overlap between them. although distorted metal-oxygen-metal bonds exist in the amorphous material, the magnitude of the overlap between s orbitals seems to be insensitive to the presence of the distorted bonds, allowing high values of mobility, even in devices fabricated at room temperature. the transistor presented in [1] used 140-nmthick y2o3 layer as gate dielectric and indium tin oxide (ito) as source (s), drain (d) and gate (g) contacts. all materials used in the tft were transparent. to explain the conduction mechanism, authors previously analyzed the behavior of single-crystalline ingao3(zno)5 [2]. for these devices, the carrier transport was associated to percolation conduction over potential barriers around the conduction band edge. these potential barriers are supposed to be due to randomly distributed ga 3+ and zn 2+ ions in the crystal structure. since the amorphous igzo (a-igzo) tfts showed also high mobility values with a behavior similar to the crystalline ones, authors considered that the percolation conduction mechanism takes place also in a-igzo tfts [3]. due to the relatively high electron mobility, high optical transparency, low temperature and relatively low cost processing techniques, these devices have found an important application in active matrix organic light emitting diodes, (amoleds) displays [4-7]. from this moment on, a-igzo tfts have been object of continuous and intensive research from all points of view, including technological and physical aspects, looking to improve stability, increase mobility and reduce operating voltage range, among others. the characteristics of the a-igzo band structure can be found in [6,7], with a distribution of bulk localized states dos in the gap [7,8]. it is generally accepted that dos observed in a-igzo layers are characterized by a relatively low density of localized states, less than 1x10 20 cm -3 ev -1 , and their characteristics strongly depend on the process used for the igzo layer deposition and in general on the device fabrication [9-13]. regarding the conduction mechanism, in [14], authors proposed a conduction mechanism that contains both possibilities, band percolation [15] and the mobility edge or multiple trapping and release mechanism [16,17], which they call extended mobility edge model. depending on the specific characteristics of the device associated to the fabrication process, or depending on the operation regime for the same device, the predominant mechanism can be either percolation in conduction band or multiple trapping. the characterization with temperature of the electrical characteristics of tfts allows to analyze, not only the behavior of the devices in the temperature operation range required for the specific application, but also the conduction mechanisms. in most amorphous tfts, the drain current has been reported to increase with temperature, which is characteristic of the hopping conduction mechanism. in this paper, we show, that under certain operation conditions, a reduction of the drain current with temperature is observed, which is related to the characteristics of the dos present in the a-igzo layer of the device. effect of the distribution of states in amorphous in-ga-zn-o layers on the conduction mechanism... 3 2. experimental part for the analysis of the electrical characteristics, we will use two bottom gate top contact igzo tfts shown in figures 1a and b. device 1 consists of 90 nm of hfo2 as gate dielectric, deposited at 100 o c by atomic layer deposition, on top of which, a 70 nm thick igzo layer was deposited by pulsed laser deposition (pld) at 20 mtorr oxygen pressure. a 500 nm thick layer of poly-p-xylylene-c (parylene-c), deposited by chemical vapor deposition (cvd) at room temperature at 1 mtorr, was used as etch stopper layer (esl). au/cr deposited by electron beam was used for gate contact and al was used for drain and source contacts. annealing was done after the deposition of the a-igzo layer and at the end of the fabrication process. device 2 consisted of 200 nm of si3o4 as gate insulator, deposited by plasma enhanced chemical vapor deposition (pecvd), at 250 o c as gate insulator. the aigzo layer had 12 nm and was deposited by rf sputtering at room temperature. as etch stopper layer, 100 nm of sio2, deposited by pecvd, were used. mo/cr was used for g, d and s contacts. a final annealing was done at the end of the fabrication process. photolithography was used to pattern each layer. figures 1a and b show the cross section of device 1 and 2, respectively. the analyzed tfts corresponding to device 1 had channel width (w) and length (l) of w=80 µm l=40 µm and those of device 2 had w=900 µm, l=30 µm. (a) (b) fig. 1 a) cross section of igzo tft referred as: a) device 1; b) device 2. electrical measurements were done at different temperatures and in vacuum conditions, using a k20 programmable temperature controller and measurement chamber from mmr technologies inc. and a keithley 4200 semiconductor characterization system. the output characteristics were measured every ten degrees, in the temperature range between 300 k and 350 k. measurements were done after waiting 5 minutes at each fixed temperature, with no applied bias. the time with applied voltage, during measurements at 4 m. estrada, y. hernandez-barrios, o. moldovan, et al. each temperature, was less than 5 min. before the i-v-t measurements, the devices were tested for hysteresis and bias stress instability at room temperature to guarantee that the variation of the drain current was due to the temperature variation and not to instability effects. 3. analysis and discussion figure 2a shows the measured output characteristics at 300, 320 and 330 k for device 1. fig. 2b shows the output characteristics at 300,330 and 350 k for device 2. as can be seen in fig. 2a, the drain current (ids) increases significantly with temperature. this is the typical behavior with temperature of the output current in a-igzo shown in [12,14,17,18,19]. on the contrary, in the output characteristics shown in fig. 2b, ids reduces with the increase of t, as vds increases. as already mentioned, due to the specific characteristics of metal oxide materials chemical bonds, the conduction mechanism in a-igzo tfts can be due not only to hopping, typical of amorphous tfts, but also to percolation in the conduction band [8,9,14]. the temperature dependence of the drain current and mobility will be determined by the predominant conduction mechanism, which can depend, not only on the fabrication process, but on the operation conditions for a given fabrication process. it is expected that the contribution of the variable range hopping (vrh) becomes greater than the band-like mechanism when the fermi level ef lies within the exponential tail states. according to [14], for a characteristic energy of around kta=0.069 ev and a density of acceptor tail states at ec, (nta) in the order of 3.4x10 19 cm -3 ev -1 , this can occur. to estimate the dos in the amorphous semiconductor material of our devices, we used the same procedure as in [16,17], obtaining characteristic energy of kta =0.072 ev and nta = 8.5x10 19 cm -3 ev -1 for device 1 and kta=40 mev and nta<6x10 18 cm -3 ev -1 for device 2. in order to study in more detail the effect of the dos characteristic on the conduction mechanism, we used simulations in atlas. for this purpose, we simulated the output characteristics for a-igzo tfts with a bottom gate structure. different dos characteristics with an acceptor-type dos, having nta values in the range from 1.5x10 20 cm -3 ev -1to 3.5x10 17 cm -3 ev -1 were simulated. the characteristic energy was varied from 0.03 ev to 0.18 ev. the default low field mobility model was used, taking the default value of the temperature dependent parameter for this mobility in altas. the reduction of mobility with temperature is the typical behavior expected for a crystalline device due to phonon scattering. in this case, it can be associated to a crystalline-like behavior of the amorphous oxide semiconductor material [3]. the mobility dependence with temperature is considered with the objective to distinguish between the effect of the characteristics of the dos and the effect of a crystalline-like mobility behavior, on the ids temperature dependence. if mobility is considered constant in the simulator, the variation of the drain current with temperature will be determined only by the dos characteristics, which was confirmed by simulating considering a mobility that does not depend on temperature. the model used for the blaze simulation included fermi statistics, as well as band parameters and bandgap narrowing specified for igzo material. effect of the distribution of states in amorphous in-ga-zn-o layers on the conduction mechanism... 5 main results of simulations are summarized on table i. for simulated output characteristics of devices with nta=1.5x10 20 cm -3 ev -1 and kta=0.34, the typical increase of ids with t was observed for all curves with vgs equal or above 4 v. it is evident that in this case, defects are determining the behavior of the temperature dependence of the drain current. for values of nta equal or below 1.5x10 19 cm -3 ev -1 and kta=0.034 ev, the drain current decreases with temperature. this result confirms that when, the density of localized states is sufficiently small and trapping is less important, the temperature dependence of the drain current is determined by the temperature dependence of mobility, see table 1. (a) (b) fig. 2 output characteristics at different temperatures, of: a) device 1; b) device 2´. 6 m. estrada, y. hernandez-barrios, o. moldovan, et al. the effect of reducing the dos characteristic energy kta, and thus the effect of trapping, was also analyzed. for this purpose nta was maintained constant and equal to nta=3.5x10 19 cm -3 ev -1 , while the characteristic energy was varied. table 1 and fig. 3 show that the reduction of kta allows the change of mechanism to occur for smaller values of vgs. it is observed that for kta=100 mev, the change in mechanism is not observed and ids at 350 k is higher than at 300 k for all the operation voltage range. for kta =70 mev, the change in mechanism is observed only, for vgs=10 v, when ids at 350 k becomes smaller than at 300 k. for kta =0.34, the conduction mechanism is also the same in all the operation voltage range, but it corresponds to percolation in the conduction band, producing the reduction of ids with t. fig. 4 shows the change of mechanism in a simulated transfer curve in saturation, when nta is changed maintaining kta =0.034 ev. for nta = 1.5x10 20 cm -3 ev -1 , ids is higher at 350 k than at 300 k for all values of vgs. for nta =1.5x10 18 cm -3 sv -1 , ids is practically the same at 300 and 350 k for vds<0.5 v and as vgs increases, the drain current at 350 k becomes smaller than at 300 k. table 1 values of the drain current for t=300 k and 350 k, at vds=10 v and different values of vgs, corresponding to different combinations of values of nta and kta. nta (cm-3) kta (mev) ids [a] vds=10 v vgs=4 v t=350 k t=300 k ids [a] vds=10 v vgs=6 v t=350 k t=300 k ids [a] vds=10 v vgs=8 v t=350 k t=300 k ids [a] vds=10 v vgs=10 v t=350 k t=300 k 1.5x1018 34 2.05x10-5 2.54x10-5 4.00x10-5 4.98x10-5 6.58x10-5 8.23x10-5 9.65x10-5 1.21x10-4 1.5x1019 34 1.64x10-5 1.89x10-5 3.30x10-5 3.89x10-5 5.57x10-5 6.66x10-5 8.34x10-5 1.01 x10-4 1.5x1020 34 4.06 x10-6 3.20 x10-6 9.13 x10-6 7.83 x10-6 1.71 x10-5 1.50 x10-5 2.85x10-5 2.80 x10-4 1.5x1019 100 2.09 x10-6 1.50 x10-6 7.36 x10-6 6.68 x10-6 1.74 x10-5 1.78 x10-5 3.29x10-5 3.59x10-5 3.5x1019 34 1.22 x10-5 1.83 x10-5 2.56 x10-5 3.69 x10-5 4.44 x10-5 6.19 x10-5 6.83x10-5 9.21x10-5 3.5x1019 70 2.13 x10-6 1.44 x10-6 6.51 x10-6 5.41 x10-6 1.48 x10-5 1.40 x10-5 2.77 x10-5 2.85 x10-5 3.5x1019 100 2.10 x10-7 8.80 x10-7 1.08 x10-6 6.36 x10-7 3.69 x10-6 2.83 x10-6 9.38 x10-6 8.55 x10-6 6x1019 30 1.07 x10-5 1.08 x10-5 2.24 x10-5 2.37 x10-5 3.92 x10-5 4.31 x10-5 6.08 x10-5 6.87 x10-5 8.5x1019 72 2.84 x10-7 1.25 x10-7 1.03 x10-6 5.78 x10-7 2.85 x10-6 1.95 x10-6 6.53 x10-6 5.22 x10-6 3.5x1017 180 1.83 x10-5 2.25 x10-5 3.69 x10-5 4.58 x10-5 6.19 x10-5 7.72 x10-5 9.21 x10-5 1.15 x10-4 effect of the distribution of states in amorphous in-ga-zn-o layers on the conduction mechanism... 7 fig. 3 simulated output characteristics at t=300 k and t=350 k for nta= 3.5x1019 cm-3ev-1 and kta=100 mev and 70 mev, showing the different behavior of ids with t corresponding to the change in conduction mechanism. fig. 4 simulated transfer curves in saturation at t=300 k and t=350 k for nta= 1.5x1020 cm-3ev-1 and 1.5x1018 cm-3ev-1, for kta =34 mev. simulations confirm that device 1 with the dos characteristic indicated above, is expected to have hopping as the predominant conduction mechanism in all the operation region and temperature range analyzed, which is what was observed. 8 m. estrada, y. hernandez-barrios, o. moldovan, et al. from the other hand, simulations also show that for values of nta below 3.5x10 19 cm -3 and kta below 0.1 ev, the predominant conduction mechanism can change to percolation for vds and vgs above a given value. this value can be estimated analyzing the arrhenius dependence of the drain current in the devices. this was the case observed for device 2. as already mentioned, the presence of bandlike carrier transport is well accepted for igzo tfts, although the presence of vrh cannot be excluded [14]. due to it, the device can reveal an electrical crystalline-like behavior, in which mobility reduces with temperature, due to the interaction of carriers with the atoms in the material. the predominant carrier transport mechanism, will depend on the dos characteristics of the device being analyzed. if the effect of the dos, is sufficiently small, the current due to percolation conduction is expected to become predominant and the device can show a crystalline-like behavior. 4. conclusions due to the chemical bond of in a-igzo layers, carrier conduction in the conduction band is possible in aostfts based on this material. however, the presence of vrh cannot be excluded and the predominant conduction mechanism is determined by the characteristics of the dos in the amorphous igzo layer and the operating voltages, which will define the position of the fermi level. simulations confirm that, when the effect of the dos, is sufficiently small, that is when the combination of nta and kta is sufficiently small, current due to percolation conduction becomes predominant and the device can show a crystalline-like behavior in the operation range. for example, for a density of tail acceptor states nta=3.5x10 19 cm 3 ev -1 and a characteristic energy of 34 mev, ids reduces with t. for kta=100 mev the current increases with t. for kta =70 mev, the drain current decreases only when vgs=10 v. for nta =1x10 20 cm -3 ev -1 the current increases with t even for kta =34 mev, indicating that vhr conduction is predominant. for nta <1.5e 19 cm -3 ev -1 , the current reduces with t for kta =34 mev, indicating that the percolation conduction mechanism is predominant in all the operating voltage range of the tft. acknolwledgement: this work was supported by conacyt projects 237213 and 236887 in mexico, the h2020 programme of the european union under contract 645760 (domino), by contract “thin oxide tft spice model” (t12129s) with silvaco inc., by icrea academia 2013 from icrea institute and the spanish ministry of economy and competitiveness through project tec2015-67883-r (greensense). the authors acknowledge holst centre/tno and dr. i. mejia, from the university of texas at dallas, for providing the tft devices. effect of the distribution of states in amorphous in-ga-zn-o layers on the conduction mechanism... 9 references [1] k. nomura, h. ohta, a. takagi, t. kamiya, m. hirano, h. hosono, “room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, nature, vol. 432, pp. 488-492, 2004. [2] k. nomura, t. kamiya, h. ohta, k. ueda, m. hirano, h. hosono. “carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline ingao3(zno)5 films”, appl. phys. lett., vol. 85, pp. 1993-1995, 2004. [3] t. kamiya, k. nomura, h. hosono, “electronic structures above mobility edges in crystalline and amorphous in-ga-zn-o: percolation conduction examined by analytical model”, j. display technol., vol. 5, pp. 462-467, 2009. [4] e. fortunato, p. barquinha, r. martins, “oxide semiconductor thin-film transistors: a review of recent advances”, adv. mater., vol. 24, pp. 2945-2986, 2012. [5] h. kumomi, t. kamiya, h. hosono, “advances in oxide thin-film transistors in recent decade and their future”, ecs transactions, vol. 67, pp. 3-8, 2015. [6] t. kamiya, h. hosono, “material characteristics and applications of transparent amorphous oxide semiconductors”, npg asia mater., vol. 2, pp. 15-22, 2010. [7] t. kamiya, k. nomura, h. hosono, “present status of amorphous in-ga-zn-o thin-film transistors”, sci. technol. adv. mater., vol. 11, pp. 044-305. [8] t. kamiya, k. nomura, h. hosono, “electronic structure of the amorphous oxide semiconductor aingazno4–x: tauc–lorentz optical model and origins of subgap states”, phys. status solidi a, vol. 206, pp. 860–867, 2009. [9] s. sallis, k.t. butler, n.f. quackenbush, d.s. williams, m. junda, d.a. fischer, j.c. woicik, n.j. podraza, b.e. white, a. walsh, l.f. piper, “origin of deep subgap states in amorphous indium gallium zinc oxide: chemically disordered coordination of oxygen”, applied physics letters, vol. 104, pp. 232108, 2014. [10] s. c. kim, y.s. kim, j. kanicki, “density of states of short channel amorphous in–ga–zn–o thin-film transistor arrays fabricated using manufacturable processes”, jpn. j. of appl. phys., vol. 54, pp. 51-101, 2015. [11] x. ding, j. zhang, w. shi, h. zhang, c. huang, j. li, x. jiang, z. zhang, “extraction of density-ofstates in amorphous ingazno thin-film transistors from temperature stress studies”, current applied physics, vol. 14, pp. 1713-1717, 2014. [12] c. chen, k. abe, h. kumomi, j. kanicki, “density of states in a-ingazno from temperature dependent field studies”, ieee tran. electron devices, vol. 56, pp. 1177-1183, 2009. [13] j. jeong, j.k. jeong, j.s. park, y.g. mo, y. hong, “meyer–neldel rule and extraction of density of states in amorphous indium–gallium–zinc-oxide thin-film transistor by considering surface band bending”, japanese journal of applied physics, vol. 49, pp. 03cb02, 2010. [14] w. chr. germs, w.h. adriaans, a.k. tripathi, w.s.c. roelofs, b. cobb, r.a. j. janssen, g.h. gelinck, m. kemerink, “charge transport in amorphous ingazno thin-film transistors”, phys. rev., vol. b86, pp. 155-319, 2012. [15] t. kamiya, k. nomura, h. hosono, “origin of definite hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors”, appl. phys. lett., vol. 96, pp. 122103, 2010. [16] s. lee, s. park, s. kim, y. jeon, k. jeon, j.-h. park, j. park, i. song c., j. kim, y. park, d.m. kim, d.h. kim, “extraction of subgap density of states in amorphous ingazno thin-film transistors by using multifrequency capacitance–voltage characteristics”, ieee electron device lett., vol. 31, pp. 231-233, 2010. [17] j.-h. park, k. jeon, s. lee, s. kim, s. kim, i. song, j. park, y. park, c. j. kim, d. m. kim, d.h. kim, “self-consistent technique for extracting density of states in amorphous ingazno thin film transistors”, j. electrochem. soc., vol. 157, pp. h272, 2010. [18] p.y. liao, t.c. chang, t.y. hsieh, m.y. tsai, b.w. chen, y. h. tu, a. k. chu, c.h. chou, j.f. chang, j f “investigation of carrier transport behavior in amorphous indium–gallium–zinc oxide thin film transistors”, jpn. j. of appl. phys., vol. 54, pp. 094101, 2015. [19] m. estrada, m. rivas, i. garduño, f. avila-herrera, a. cerdeira, m. pavanello, i. mejia, m.a. quevedolopez, “temperature dependence of the electrical characteristics up to 370 k of amorphous in-ga-zno thin film transistors”, microelectronics reliability, vol. 56, pp. 29–33, 2016. facta universitatis series: electronics and energetics vol. 33, no 4, december 2020, pp. 583-603 https://doi.org/10.2298/fuee2004583b © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd risk management and participation of electric vehicle considering transmission line congestion in the smart grids for demand response cyrous beyzaee, sara karimi marvi, mahdi zarif department of electrical engineering, mashhad branch, islamic azad university, mashhad, iran abstract. demand response (dr) could serve as an effective tool to further balance the electricity demand and supply in smart grids. it is also defined as the changes in normal electricity usage by end-use customers in response to pricing and incentive payments. electric cars (evs) are potentially distributed energy sources, which support the grid-to-vehicle (g2v) and vehicle-to-grid (v2g) modes, and their participation in time-based (e.g., time of use) and incentive-based (e.g., regulation services) dr programs helps improve the stability and reduce the potential risks to the grid. moreover, the smart scheduling of ev charging and discharging activities supports the high penetration of renewable energies with volatile energy generation. this article was focused on dr in the presence of evs to assess the effects of transmission line congestion on a 33-bit grid. a random model from the standpoint of an independent system operator was used to manage the risk and participation of evs in the dr of smart grids. the main risk factors were those caused by the uncertainties in renewable energies (e.g., wind and solar), imbalance between demand and renewable energy sources, and transmission line congestion. the effectiveness of the model in a 33-bit grid in response to various settings (e.g., penetration rate of evs and risk level) was evaluated based on the transmission line congestion and system exploitation costs. according to the results, the use of services such as time-based dr programs was effective in the reduction of the electricity costs for independent system operators and aggregators. in addition, the results demonstrated that the participation of evs in incentive-based dr programs with the park model was particularly effective in this regard. key words: electric vehicles, smart grid, v2g, g2v, gams, loss function, demand response received march 3, 2020; received in revised form august 21, 2020 corresponding author: cyrous beyzaee department of electrical engineering, mashhad branch, islamic azad university, mashhad, iran e-mail: mahaniranian1@gmail.com 584 c. beyzaee, s. karimi marvi, m. zarif 1. introduction electric vehicle (ev) sales are growing rapidly worldwide [1,2], with the amount exceeding one million. several factors have been involved in this growing trend in the past few years, including the ability to replace fossil fuel vehicles with evs, which results in the preservation of natural reservoirs. however, the increased number of evs leads to increased grid demand. with the growth of domestic, industrial, and commercial demands, the power network must be capable of responding to all types of demands. the current power grids used in most countries are unable to fully respond to the large volume of evs. in this regard, the simplest solution is to increase transmission lines and various power plants to supply the electricity required by the grid. nonetheless, this solution requires unjustified large operating and economic costs. as such, the proper management of various parameters such as evs, wind and solar power plants and new energies, programs to reduce consumption, increased grid sustainability and customer satisfaction, and operational costs of the system is of paramount importance. in this context, one of the important topics is the transmission line congestion and management of grid demand response (dr) using evs since the lack of management of ev charging may lead to issues such as increased grid demand, power loss, and voltage fluctuations [3].this article was focused on the management and participation of evs in smart grid dr considering the impact of transmission line congestion in the form of timebased and incentive-based programs. to obtain our goals, we have first introduced evs, their types, and dr in this field. 2. overview of evs and renewable energy sources and dr 2.1. evs [4-9] there are different types of evs, some of which use the electronic grid to supply their required energy, which increases the energy received from the grid, thereby causing more problems for the grid. in general, evs are able to operate in frequency regulation, voltage regulation, spinning and non-spinning reserves, subsidiary services, and demand profile adjustment [4]. compared to common vehicles (e.g., fossil fuel cars), evs have a different propellant. the electric power required for evs is provided by three main sources, including power plants, generators, and energy savers; however, most evs are of the third type. in recent years, special attention has been paid to plug-in evs (pevs; especially battery evs and hybrid pevs) in the industrial and university sectors. 2.1.1. battery evs battery evs encompass three parts, including an electronic engine, a battery, and a controller. the electronic motor uses the battery as the driving force. the two-input controller is only able to manage the power provided to the electric motor, which provides the driving force for the vehicle to move backward or forward. simultaneously, a four-input controller supports the brake as well. another important part of battery evs is the power inverter, which is responsible for the conversion of the stored electrical energy in the battery from the dc into the ac mode. this is mainly due to the fact that most evs have an ac engine, which has a simple, low-cost structure. risk management and participation of electric vehicle considering transmission line congestion... 585 2.1.2. hybrid pevs hybrid evs are classified into three categories of parallel, series, and two-part hybrids based on their engine type. the first category is recognized as the most common engines of such vehicles. pevs often have two electronic and internal combustion engines as the propellant, which enables the vehicle to move in the no-charge and full-charge modes. hybrid pevs supply their propulsion energy from batteries. when the battery power levels are lower than a certain amount in the no-charge mode, the vehicle changes its status and switches to the use of the internal combustion engine as the propellant. in the full-charge mode, the vehicle uses a combination of electric engine and internal combustion engine for maximum efficiency in propulsion. simultaneously, the controller controls the battery charge level and maintains it at a certain level. 2.2. renewable energy sources the increased awareness of environmental crises and reduction of fossil fuel use are leading to new directions for energy production and consumption. one of these issues is renewable energy sources with eco-friendly features, including the wind energy and solar energy. 2.3. response demand the necessity to define new electronic energy sources with quick response ability in the emergency situations of power network is ever-increasing due to the growing load of power networks, especially the increased loads sensitive to the changes in the power supply parameters by the network. therefore, it is essential to address consumer management issues. structural changes in the electricity industry have led to the emergence of new paradigms alongside consumer management. dr is one of these paradigms, which encompasses the consumer management methods that lead to changes in the consumption level of costumers caused by the changes in electricity prices in the market. according to the united states department of energy, dr is defined as the empowerment of industrial, commercial, and residential users to improve electronic energy consumption, so that appropriate costs could be established and the network exploitation conditions could be improved [10]. in other words, dr could change the form of electronic energy consumption, so that the maximum system demand would reduce and consumptions would be transferred to non-peak hours. the us energy regulatory commission divides dr programs into two main groups of motivation-based and time-based dr [11]. in each classification, the dr programs are divided into several subcategories, which have been discussed in the following section [12]: incentive-based dr programs 1) direct demand control programs 2) demand reduction/cessation programs 3) repurchase/demand sales programs 4) emergency dr programs 5) market capacity programs 6) subsidiary service market programs 586 c. beyzaee, s. karimi marvi, m. zarif time-based dr programs 1) application-time pricing plans 2) actual-time pricing plans 3) critical peak-time pricing plans 3. problem statement and model presentation with the increased prevalence of evs and their use worldwide, there has been growing demand for attention and planning to exploit these vehicles. owing to their numerous benefits, fuel fossil vehicles are being rapidly replaced by evs. however, the increased number of evs has resulted in higher demands in this regard. on the other hand, the electricity network must be able to respond to all types of demands with the ever-increasing growth of housing, industrial, and commercial demands. to this end, the simplest solution is to increase transmission lines and various power plants to supply the required electricity level. nonetheless, this solution requires substantial operating and economic costs, which may not be economical. therefore, the proper management of various network parameters such as evs, wind and solar power plants, and new energies, various programs to reduce consumption, increased network stability, customer satisfaction, and system operating costs is of paramount importance. one of the key topics in this regard is the discussion of transmission line congestion, grid demand response, and management using evs. as such, the present study aimed to evaluate the management and participation of evs in the demand response of smart grids, while considering transmission line congestion and its impact in time-based and motivationbased programs. 3.1. time-based programs these programs involve the use of global networks by consumers and grid demands. by pricing electricity at different hours (load peak, mean load, and low load), the consumption peak is divided into non-peak hours and may reduce. therefore, there would be no transmission line congestion, and electricity purchase level would decrease significantly. 3.2. motivation-based programs focusing on regulatory services and supplying the reserve amount are essential to the states of g2v and v2g, leading to demand-response balance and reduction of global network costs. moreover, it results in increased profitability for customers and higher use of evs. in this program, evs are connected to the grid in the two states of g2v and v2g, experiencing smart discharging in addition to smart charging [13-15]. 3.3. studied system the system assessed in the present study is illustrated in figure 1 [16].the independent system operator plays a pivotal role in this system, managing the market by collecting and exporting information among the market members, such as power plants, demand centers, and ev aggregators. the independent system operator aims to reduce the operational costs of the system. however, the balance between supply and demand remains constant at all times. the power system encompasses the energy distribution of various manufacturing risk management and participation of electric vehicle considering transmission line congestion... 587 units, such as conventional power generators and renewable energy systems (wind and solar power). considering the limited capacity of electric car batteries, the contribution of each battery separately to the grid is negligible. previous studies have indicated the inefficiency of planning for small-scale consumer participation in wholesale electricity market [11]. therefore, it is essential to control the charging and discharging of numerous evs by an aggregator to participate in tenders and coordinate the charging and discharging activities of evs. notably, the aggregator units cover both v2g and g2v models. vehicle owners announce their battery capacity and traffic route to the aggregator units by considering the additional time and distance and possible parameters for the proper and accurate planning of evs. on the other hand, the aggregator units inform the independent system operator on the available and anticipated capacity of the state of charge (soc) in order to participate in the demand level and frequency tuning services. fig. 1 an overview of studied system [16] the aggregators support both the time-based and motivation-based states in demand response programs. in this article, the time of use was selected as the time-based program to supply the demand service provision. the vehicles participating in the program were required with different costs at various times (e.g., load peak or low load) [17-20]. the aggregators often participate in the motivation-based programs of the demand response to supply the required v2g and g2v for regulatory services. these services have two classifications in terms of the costs for the independent system operator, which involve paying the reserving capacity costs and energy costs to the aggregators [2122].the reserve capacity costs are equal to the maximum capacity supplied by each aggregator during the contract. the energy costs are associated with the costs of energy transfer from the v2g state to the g2v state. in addition, a specific number of evs is required for the rapid responding to the demand, as well as saving the excess energy or compensating for its shortage. the level of emergency storage must also be set correctly. moreover, the decision-makings in this regard are mainly focused on the charging and discharging of electric cars, and the plan of producing electricity from various sources often has to be precise. decisions should be made by considering various risk factors for 588 c. beyzaee, s. karimi marvi, m. zarif the possible future scenarios. in this regard, the risk in the mentioned conditions is the possible imbalance between demand and power supplies (supply and demand). in the current research, the model presented for the management of the participation of evs in demand response programs was based on the dc opf model. 𝑚𝑖𝑛∑ (1) ∑ 𝑓 𝑘 (2) 𝑓 ( ) 𝑙 (3) (4) (5) equations 1-5 show the main formula of opf, which minimizes the costs associated with various generating units and the current load in terms of the technical limitations of the electricity grid. in addition, equations 2 and 3 demonstrate the load balance per bus and power flux per line. the heat flux limit and generator capacity are shown in equations 4 and 5. the opf model presented above has been corrected for the integration of dynamic issues into our model. in this respect, the main goal was to manage the level of necessary reservation for the v2g and g2v states, as well as the anticipated costs in the future system vision. the modified model was presented for the management of the cooperation of evs in equations 5 and 6. the first part of the target function shown in equation 6 is related to the reservation capacity costs of evs to conclude the v2g and g2v service contracts. the second part includes the expected operating costs of the independent system operators for the actual energy payments sent for regulatory services. the next part of the production costs of conventional generators is the costs of the current load and decreased costs of renewable energies. in addition, the energy outage costs are considered in the model because when the surplus energy is generated by renewable sources, iso should be allocated to others to receive the additional energy [23]. equation 7 is similar to equation 2 in terms of showing the power balance per bus. the overall energy flux to the bus (generating electricity) through conventional generators, renewable energy sources, and energy discharge from the aggregators is equal to the total overall energy output from the bus (base demand, charged energy of the aggregators, reduction of renewable energies). ∑ 𝑑 𝑑 the soc of each aggregator is presented in equation 8, which changes based on the charge/discharge status and battery efficiency. initially, the aggregators must supply the charge of the vehicles that immediately leave the place and need charge. the soc of the input and output vehicles often affects the overall charge of the aggregators. equation 9 ( 𝑎 +𝐴𝑔𝑟 𝑋𝑎 ,𝑡 𝑉2𝐺 + 𝑎 𝐴𝑔𝑟 𝑋𝑎 ,𝑡 𝐺2𝑉) 𝐴 𝑎=1 𝑇 𝑡=1 + 𝑠 𝑆 𝑠=1 ( 𝑡 𝐷𝑖𝑠𝑏𝑎 ,𝑡 ,𝑠 + 𝑡 𝐷𝑖𝑠𝑑𝑎 ,𝑡 ,𝑠 ) 𝐴 𝑎=1 𝑇 𝑡=1 + 𝑠 𝑆 𝑠=1 ( 𝑔 𝐺𝑒𝑛 𝑔,𝑡 ,𝑠 + 𝑘 𝑢𝑙 𝑘 ,𝑡 ,𝑠 + 𝑘 𝑐𝑢𝑟 𝑘,𝑡 ,𝑠) 𝐴 𝑎=1 𝑇 𝑡=1 (6) (7) risk management and participation of electric vehicle considering transmission line congestion... 589 shows the charge of the remaining battery capacity of the aggregators. the improvement of the charge/discharge pattern affects the remaining battery capacity (rbc) of an ev after arriving at the parking lot. moreover, the rbc is affected by the soc of the input and output vehicles. 𝑆 𝑆 𝑑 𝑑 𝑆 𝑆 𝑑 𝑑 𝑆 𝑆 the equations 10-12 show a method similar to the equations 3-5. however, the flux constraint was not presented for lines with error ( ). ( ) equations 10-12 show a method similar to equations 3-5. however, the flux constraint was not presented for the lines with error ( ). in addition, equation 13 guarantees the use of the generator in the allowed range. on the other hand, equation 14 indicates the risk coefficient required for the operator. accordingly, the probability of any mismatch between the power source and demand would be less than or equal to the specified error limit ). in addition, equations 15 and 16 guarantee the operation of the aggregator only in one of the v2g or g2v states at any moment. 𝑟 ( ) 𝑑 𝑑 ( ) moreover, equation 17 demonstrates that discharge is limited by the available energy, while equation 18 guarantees that the level of charge does not exceed the empty capacity available to the accumulators. 𝑑 𝑆 𝑆 𝑆 𝑑 𝑆 𝑆 (8) (9) (10) (11) (12) (13) (14) (15) (16) (17) (18) 590 c. beyzaee, s. karimi marvi, m. zarif (24) nonetheless, equations 19 and 22 are boundary constraints. the non-provided load and decreased energy are limited by the actual load and renewable energy available in equations 19 and 20. the required storage was determined in the aggregators’ contract and limited to their capacities to support the v2g and g2v services, while constraint 21 shows the limit of this capacity in the g2v state. similarly, the discharge energy of the aggregators is limited by the maximum storage defined for the v2g state in their contracts. 𝑏 𝑋 𝑑 𝑋 equation 23 shows the g2v reservation storage. moreover, the maximum period guarantees the level of g2v reservation required when the generated energy is higher than the system’s demand. in such case, evs are charged, and the g2v reservation level is estimated based on their participation in the use of the surplus energy. equation 24 shows that the g2v service provided by each aggregator cannot exceed its charge amount, and the range of changes in the variables is shown in equation 25. 𝑏 𝑑 𝑋 𝑋 the aforementioned model is a nonlinear complex number programming problem, which could be converted into a linear complex number programming problem. to establish linearity, equation 14 is replaced by equations 26 and 27. moreover, the binary variable is equal to one if there is incompatibility between the energy sources and existing demand; otherwise, it would be zero. in order to make equation 23 linear, we used equation 28 through equation 31 to cover all the possible cases. ∑ ∑ ∑ 𝑟 𝑏𝑎 ,𝑡 ,𝑠 𝐴 𝑎=1 = 𝑚𝑖𝑛 𝑑𝑎 ,𝑡 ,𝑠 + 𝐴 𝑎=𝑙 , 𝑚𝑎𝑥(0, 𝑗 ,𝑡 ,𝑠 𝐽 𝑗=1 + 𝑛 ,𝑡 ,𝑠 𝑁 𝑛=1 𝑘 ,𝑡 ,𝑠 𝐾 𝑘=1 ) 𝑎 ,𝑡 ,𝑠 ( ′ 𝑡 ,𝑠) 𝑗 ,𝑡 ,𝑠 𝐽 𝑗 =1 + 𝑛 ,𝑡 ,𝑠 𝑁 𝑛=1 𝑘 ,𝑡 ,𝑠 𝐾 𝑘=1 (1 ′ 𝑡 ,𝑠) 𝑎 ,𝑡 (19) (20) (21) (22) (25) (23) (26) (27) (28) risk management and participation of electric vehicle considering transmission line congestion... 591 4. model implementation and simulation in order to evaluate the proposed models, we applied a one-day program on the standard 33 bus grid as the case study, the characteristics of which are presented in table 1, along with the base load. the maximum generating capacity was 700 kw, and the minimum production value for the conventional generators was not set. the transmission capacity of each 2 mw line with equal susceptance risk was estimated at 10 p.u. the charging of evs imposes an additional load to the system, which does not include the base load. the parking pattern in figure 2 was considered for the evaluation of the number of the ev inputs and outputs each day. each parking region had the maximum capacity of 200 vehicles and was managed by an aggregator. therefore, it was assumed that each ev has a battery with a 24 kwh capacity and 99% charge/discharge efficiency. in addition, it is expected that 35% of the parked vehicles are evs. in general, evs enter the parking with 30% charge and prefer to leave the parking with 90% battery charge. figure 3 shows the generated energy by the wind and solar power plants as selected based on the data of california iso wind and solar power plants [24]. the cost related to renewable energy decreased, and the reduced load was assumed as 1.5 and 5$/kw, respectively as shown in equation 23. furthermore, the cost related to the generation of emergency electricity by a conventional generator was presented as 0.20 $/kwh. the aggregators cost 0.02 $/kwh for the available capacity to provide the v2g and g2v services. the aggregators could benefit from 100% discount if they charge when there is the need for energy reduction. in addition, the independent system operator deals with the aggregators, high costs of regulation services, and other services. however, the different services had various costs, which mostly depend on the electricity market cost. for instance, 0.01 $/kwh was considered as the base cost of electricity. 𝑗 ,𝑡 ,𝑠 𝐽 𝑗=1 + 𝑛 ,𝑡 ,𝑠 𝑁 𝑛=1 𝑘 ,𝑡 ,𝑠 𝐾 𝑘=1 𝑑𝑎 ,𝑡 ,𝑠 + 𝐴 𝑎=𝑙 (1 ′′ 𝑡 ,𝑠) 𝑎 ,𝑡 𝑏𝑎 ,𝑡 ,𝑠 𝐴 𝑎=1 ( 𝑗 ,𝑡 ,𝑠 𝐽 𝑗=1 + 𝑛 ,𝑡 ,𝑠 𝑁 𝑛=1 𝑘 ,𝑡 ,𝑠 𝐾 𝑘=1 ) (1 ′′ 𝑡 ,𝑠) ′ 𝑡 ,𝑠 𝑡 ,𝑠 𝑏𝑎 ,𝑡 ,𝑠 𝐴 𝑎=1 𝑑𝑎 ,𝑡 ,𝑠 + 𝐴 𝑎=1 ′′ 𝑡 ,𝑠 ′ 𝑡 ,𝑠 𝑡,𝑠 (29) (30) (31) 592 c. beyzaee, s. karimi marvi, m. zarif table 1 characteristics of a standard 33 bus grid br.no rc.nd sn.nd r(ohm) x(ohm) pl(kw) 1 0 1 0.0922 0.47 100 2 1 2 0.493 0.2511 90 3 2 3 0.366 0.1864 120 4 3 4 0.3811 0.1941 60 5 4 5 0.819 0.707 60 6 5 6 0.1872 0.6188 200 7 6 7 0.7114 0.2351 200 8 7 8 1.03 0.74 60 9 8 9 1.044 0.74 60 10 9 10 0.1966 0.065 45 11 10 11 0.3744 0.1238 60 12 11 12 1.468 1.155 60 13 12 13 0.5416 0.7129 120 14 13 14 0.591 0.526 60 15 14 15 0.7463 0.545 60 16 15 16 1.289 1.721 60 17 16 17 0.732 0.574 90 18 1 18 0.164 0.1565 90 19 18 19 1.5042 1.3554 90 20 19 20 0.4095 0.4784 90 21 20 21 0.7089 0.9373 90 22 2 22 0.4512 0.3083 90 23 22 23 0.898 0.7091 420 24 23 24 0.896 0.7011 420 25 5 25 0.203 0.1034 60 26 25 26 0.2842 0.1447 60 27 26 27 1.059 0.9337 60 28 27 28 0.8042 0.7006 120 29 28 29 0.5075 0.2585 200 30 29 30 0.9744 0.963 150 31 30 31 0.3105 0.3619 210 32 31 32 0.341 0.5302 60 risk management and participation of electric vehicle considering transmission line congestion... 593 fig. 2 parking pattern fig. 3 pattern of electricity generation by wind and solar sources this model was developed in matlab software and solved by the cplex solver in the definitive and randomized forms. it is notable that the definitive cases were considered as the base case, and no risk range was considered for the definitive cases. the model was solved after adjusting the random parameters for their expected values. the results regarding the load levels in the definitive cases are shown in figure 4, where the collaboration of evs was observed to be effective in correcting the available load and using renewable energies, while transferring the load charge to off-peak periods. figure 5 illustrates the results on the g2v and v2g services in the definitive cases. in this regard, 0 20 40 60 80 100 120 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 p ar ki n g u ti liz at io n (% ) time(hour) 0 200 400 600 800 1000 1200 1400 1600 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4 p o w er g en er a ti o n (k w ) time(hour) wt pv 594 c. beyzaee, s. karimi marvi, m. zarif evs provided the g2v reserve at hours by generating more renewable energy and insufficient base load. in addition, the evs were discharged to provide v2g services at the load peak. conventional generators are applied to generate the necessary electricity in periods when the sum of renewable energies and emitted energy by evs is insufficient to reach the base load. fig. 4 results of ev participation in base state fig. 5 results of ev participation to provide reservation services in base state the capacity of the lines also reduced to observe the effect of transmission line congestion on the cost function in the definitive form. the maximum capacity of transmission lines was 2 mw, and decreased congestion constraint to 1 mw led to the 0 500 1000 1500 2000 2500 3000 3500 4000 4500 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 hourly-load ev-load res -1000 -500 0 500 1000 1500 2000 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 rg2v rv2g risk management and participation of electric vehicle considering transmission line congestion... 595 congestion of the lines. as a result, the cost of system operation increased. figure 6 illustrates the results of decreased transmission line congestion and the effects on the v2g and g2v states. as is observed, the reservation amount decreased in the g2v state with the transmission line congestion. in contrast, the reservation amount increased in the v2g state. fig. 6 effect of transmission line congestion on reservation plans in base state in general, the reservation level in the g2v and v2g states increased, which in turn led to the increased system operating costs. 4.1. charging method this section illustrates the effects of charging the evs on the operating costs of the power systems. the definitive base model was run with three different charging models 4917.322909 4385.643281 4100 4200 4300 4400 4500 4600 4700 4800 4900 5000 f_max(l)=2mw f_max(l)=1mw r es er vi n g in g 2 v m o d e 2713.14846 3592.512 0 500 1000 1500 2000 2500 3000 3500 4000 f_max(l)=2mw f_max(l)=1mw r es er vi n g in v 2 g m o d e 596 c. beyzaee, s. karimi marvi, m. zarif and policies. in the first policy, it was assumed that the evs do not participate in recharge programs and are charged once when they arrive in the parking lot. the second policy showed that the evs participated in the time-based program of the demand response, which led to the planning of ev charging by the aggregators to reduce the electricity costs and eliminate the load peak. when the aggregators attended the time-based programs of the demand response, the independent system operator only responded to the charging patterns by minimizing its operational costs. table 2 shows the time spent to manage consumer recharge. the total charging cost of the aggregators participating in the time of use program was calculated using the ∑ ∑ 𝑑 equation. table 2 hourly electricity cost hour price($) hour price($)2 1 0.05 13 0.19 2 0.05 14 0.19 3 0.05 15 0.19 4 0.05 16 0.12 5 0.05 17 0.12 6 0.05 18 0.12 7 0.05 19 0.19 8 0.12 20 0.19 9 0.12 21 0.19 10 0.12 22 0.12 11 0.19 23 0.12 12 0.19 24 0.05 in the third policy, the participation of the evs in the motivation-based program of the demand response was assumed, and the vehicles were motivated to participate in the g2v and v2g states. the overall energy cost of the aggregators in this policy was estimated using the equation below: in the equation above, the negative values indicated that not only the aggregators did not pay the costs, but they also inspire revenue generation in most cases. the results of the charging strategy are presented in table 3. table 3 results of three charging policies of evs dr charging policy iso reserve cost ($) iso operation cost ($) aggregator's energy payment ($) generation (kwh) no participation 0 44500.572 261.791 15812 time-based 0 37312.752 116.64 14756 incentive-based 417.89 25804.761 -179.741 13590 ( 𝑡 𝑐𝑕𝑑𝑎 ,𝑡 ,𝑠 + 𝑡 𝑒𝑔 𝑏𝑎 ,𝑡 ,𝑠 𝑡 𝐷𝑐𝑕𝑑𝑎 ,𝑡 ,𝑠 𝑎 +𝐴𝑔𝑟 𝑥𝑎 ,𝑡 𝑉2𝐺 𝑎 𝐴𝑔𝑟 𝑥𝑎 ,𝑡 𝐺2𝑉) 𝐴 𝑎=1 𝑇 𝑡=1 (32) risk management and participation of electric vehicle considering transmission line congestion... 597 the conventional power generation and charging patterns of the three policies are shown in figures 7 and 8. participation in the demand response programs decreased the costs of the aggregators and independent system operator. compared to the time-based program, the motivation-based program provided more saving in the costs of the independent system operator, which was mainly due to the fact that the use of evs for the management of the v2g and g2v states could reduce the costs related to the lost load and energy reduction. participation in the motivation-based programs is often associated with positive income generation for the aggregators. as is depicted in figure 7, unplanned charging forced the conventional power systems to generate more power during the peak times when the system experienced higher load. motivational programs often cover the need for routine energy generation by entirely using renewable sources. the main goal of demand response programs is to decrease the load peak. according to the obtained results, participation in the time-based and motivation-based programs led to 48% and 51% decrease in the load peak, respectively. as is shown in figure 8, the participation of the aggregators in the demand response programs created the motivation for the lack of charging at the peak hours, thereby increasing the desire to charge at the non-peak hours. fig. 7 conventional power plant production rates in three different charging policies fig. 8 charging activity of evs in three different charging policies 0 500 1000 1500 2000 2500 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 p o w er (k w ) time(hour) no participation time_based incentive_based 0 500 1000 1500 2000 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 no participation(sen1) time-based(sen2) incentive-based(sen3) 598 c. beyzaee, s. karimi marvi, m. zarif figure 9 shows the effect of transmission line congestion on the production of conventional power plants in the three charging policies. according to the results, the energy produced by conventional power plants significantly reduced in case of congestion in the transmission lines. considering that conventional power plants are used to supply part of the system load that is not responsive to renewable energies and electric vehicles, the network cannot supply that part of the system load. fig. 9 effect of transmission line congestion on production of conventional power plants 0 5000 10000 15000 20000 f_max(l)=2mw f_max(l)=1mw c o n ve n ti o n al g en er ti o n s senario1 0 5000 10000 15000 20000 f_max(l)=2mw f_max(l)=1mw c o n ve n ti o n al ge n er at io n s senario2 10500 11000 11500 12000 12500 13000 13500 14000 f_max(l)=2mw f_max(l)=1mwc o n ve n ti o n al g en er at io n s senario3 risk management and participation of electric vehicle considering transmission line congestion... 599 according to the simulation results, the costs of the independent system operator increased with the decreased transmission line congestion. figure 10 depicts the results in the three charging policies. fig. 10 effect of transmission line congestion on costs of independent system operator 44500.572 67941.623 0 10000 20000 30000 40000 50000 60000 70000 80000 f_max(l)=2mw f_max(l)=1mw c o st o f is o ($ ) senario1 37312.752 60353.122 0 10000 20000 30000 40000 50000 60000 70000 f_max(l)=2mw f_max(l)=1mw c o st o f is o ($ ) senario2 25804.761 39323.319 0 5000 10000 15000 20000 25000 30000 35000 40000 45000 f_max(l)=2mw f_max(l)=1mw c o st o f is o ($ ) senario3 600 c. beyzaee, s. karimi marvi, m. zarif 4.2. risk perspective and random solutions in this section, the model is solved in the random form by the predefined risk level of 0.01, which indicated that the possibility of mismatch between the load and source must be less than 1%. therefore, it was assumed that the load, renewable energy production, behavior of the ev owners, soc input and output of the aggregators, and line errors were uncertain. to reduce the computational time of the random model, the reduction scenario presented in was used to construct a tree scenario with 10 scenarios [25-26]. in the random model, a higher reserve level was required compared to the definitive status due to the uncertainty and risk level parameters. the random model was also solved for various risk thresholds, including 0.01, 0.1, and 1. as can be seen in figure 11, the higher risk threshold tolerated the higher probability of mismatch between the source and load, thereby requiring less storage. fig. 11 effect of imbalance between energy source and demand on reservation programs with various risk factors 1800 1900 2000 2100 2200 2300 2400 2500 2600 stochastic33(0.01)-g2v stochastic33(0.1)-g2v stochastic33(1.00)-g2v r eg u la ti o n d o w n (k w ) risk telorance 2000 2050 2100 2150 2200 2250 2300 stochastic33(0.01)-v2g stochastic33(0.1)-v2g stochastic33(1.00)-v2g r eg u la ti o n u p (k w ) risk telorance risk management and participation of electric vehicle considering transmission line congestion... 601 similar to the definitive form, the reservation level increased in the v2g and g2v states by applying line congestion in the random form, which led to the increased cost of system operation. however, the amount was lower compared to the definitive form, which was due to the presence of a risk coefficient and possible disproportion between the load and energy source. the results for 1% risk coefficient are shown in figure 12. fig. 12 effect of transmission line congestion on reservation level of demand respond programs in random form 2490.466 2503.466 2480 2485 2490 2495 2500 2505 f_max(l)=2mw f_max(l)=1.8mw r es er vi n g in g 2 v m o d e( k w ) stochastic model 2260.198 2287.32 2245 2250 2255 2260 2265 2270 2275 2280 2285 2290 f_max(l)=2mw f_max(l)=1.8mw r es er vi n g in v 2 g m o d e( k w ) stochastic model 602 c. beyzaee, s. karimi marvi, m. zarif 5. conclusion in the present study, we applied a new ev participation plan in demand response programs and their timing in a smart grid. in addition, we evaluated the effects of transmission line congestion on the cost of system operation and level of reservation in the definitive and random forms. the applied system was a standard 33-bus system exposed to the possible risk of various load levels due to the uncertainty of evs, production of renewable energies, transmission line congestion, and behavior of the ev owners in a group manner. we also assessed the participation of evs in demand response programs in timebased and motivation-based areas, observing that the participation could be extensively effective in the response to the load of the smart grid, thereby providing considerable load and reducing the load peak, which led to the reduction of the operational costs of the system, aggregators, and ev owners, as well as monetization in some cases. the random model enables users to determine the level of risk and costs and their profits considering the available factors. the model evaluated in this thesis could be used to improve the storage levels required by an independent system operator by considering the profits of the aggregators. the independent system operator could reduce operational costs by improving the conventional production schedule and renewable energies, as well as the participation of evs. moreover, the aggregators attempted to reduce the electricity costs by optimizing the charge/discharge schedule of evs in order to receive the maximum discount and revenue from participation in the demand response. the definitive and random cases were assessed to demonstrate the effects of parameters such as charging policy, level of risk, penetration of renewable energies, and residential load pattern. according to the results, services such as time-based programs affected the reduction of electricity costs for the independent system operator and aggregators. in addition, the participation of evs in the motivationbased programs by the park model had a significant impact in this regard. references [1] lutsey n. global milestone: the first million electric vehicles. 2015. [2] wilson l. the ev wedge: how electric vehicle fuel savings vary by country (and car). 2015. [3] z. yang, k. li, a . foley, “computational scheduling methods for integrating plugin electric vehicles with power systems: a review”, renew sustain energy rev, vol. 51, pp. 396–416, 2015. [4] g. cardoso, m. stadler, m.c. bozchalui, r. sharma, c. marnay, a. barbosa-povoa, et al., “optimal investment and scheduling of distributed energy resources with uncertainty in electric vehicle driving schedules”, energy, vol. 64, pp. 17–30, 2014. [5] k. mets, r. d'hulst, c. develder, “comparison of intelligent charging algorithms for electric vehicles to reduce peak load and demand variability in a distribution grid”, commun netw j, vol. 14, no. 6, pp. 672– 81, 2012. [6] m. musio, p. lombardi, a. damiano, “vehicles to grid (v2g) concept applied to a virtual power plant structure”, in proceedings of xix international conference on electrical machines icem 2010, rome, italy, 2010. [7] c. white, k. zhang, “using vehicle-to-grid technology for frequency regulation and peak-load reduction”, j power sources; vol. 196, no. 8, pp. 392–398, 2011. [8] m. honarmand, a. zakariazadeh, s. jadid, “optimal scheduling of electric vehicles in an intelligent parking lot considering vehicle-to-grid concept and battery condition”, energy, vol. 65, pp. 572–579, 2014. [9] s. shao, m. pipattanasomporn, s. rahman, “grid integration of electric vehicles and demand response with customer choice”, ieee trans smart grid, vol. 3, no. 1, pp. 543–50, 2012. risk management and participation of electric vehicle considering transmission line congestion... 603 [10] a. khazali, m. kalantar, “a stochasticeprobabilistic energy and reserve market clearing scheme for smart power systems with plug-in electrical vehicles”, energy convers manag, vol. 105, pp. 1046–105, 2015. [11] e. sortomme, m.a. el-sharkawi, “optimal combined bidding of vehicle-to-grid ancillary services”, ieee trans smart grid, vol. 3, no. 1, pp. 70–79, 2012. [12] a. damiano, g. gatto, i. marongiu, m. porru, a. serpi, “vehicle-to-grid technology: state-of-the-art and future scenarios”, j energy power eng, vol. 8, no. 1, p. 152, 2014. [13] r. sioshansi, “or forum-modeling the impacts of electricity tariffs on plug-in hybrid electric vehicle charging, costs, and emissions”, oper res, vol. 60, no. 3, pp. 506–516, 2012. [14] s. habib, m. kamran, u. rashid, “impact analysis of vehicle-to-grid technology and charging strategies of electric vehicles on distribution networksea review”, j power sources, vol. 277, pp. 205–214, 2015. [15] m. yilmaz, p.t. krein, “review of the impact of vehicle-to-grid technologies on distribution systems and utility interfaces”, ieee trans power electron, lov 28, no. 12, pp. 5673–5689, 2013. [16] n. nezamoddini, y. wang, risk management and participation planning of electric vehicles in smart grids for demand response. [17] l. zhang, z. zhao, j. chai and z. kan, “risk identification and analysis for ppp projects of electric vehicle charging infrastructure based on 2-tuple and the dematel model”, world electric vehicle journal, vol. 10, no. 4, 2019. [18] risk management and public participation (geog90020), handbook,the university of melbourne, 2019. [19] y. wang, l. li, “time-of-use based electricity demand response for sustainable manufacturing systems”, energy, vol. 63, pp. 233–244, 2013. [20] y. wang, l. li, “time-of-use electricity pricing for industrial customers: a survey of us utilities”, appl energy, vol. 149, pp. 89–103, 2015. [21] a. khalid, n. javaid, a. mateen, m. ilahi, t. saba and a. rehman. “enhanced time-of-use electricity price rate using game theory”. [22] w. kempton, j. tomic, “vehicle-to-grid power fundamentals: calculating capacity and net revenue”, j power sources, vol. 144, no. 1, pp. 268–279, 2005. [23] d. howarth, b. monsen, “renewable energy faces daytime curtailment in california”, 2015. [24] caiso renewable watch data. [25] n. growe-kuska, h. heitsch, w. romisch, “scenario reduction and scenario tree € construction for power management problems”, in proceedings of ieee power tech conference, bologna, italy, 2003. [26] f. thangaiyan, risk management in renewable energy and sustainability in india., project. july 2019. https://www.sciencedirect.com/science/article/abs/pii/s0360544216314232#! https://www.sciencedirect.com/science/article/abs/pii/s0360544216314232#! https://handbook.unimelb.edu.au/ https://www.researchgate.net/profile/franklin_thangaiyan?_sg%5b0%5d=8pecsfmzbmwtaljm8odnseamvwuejpuj8zfkyn7jogwnjzivuzyp3nfiuamzrwz3vbagqyk.-kjcz-qbyzoahcjmrbordy_6xd1ptgup19ww_4pudzwzkfommrxxcu5ornzb4tqcjfhriz66kk7hio6bkzcbaq&_sg%5b1%5d=uk3qzvsxsolysy6us2hf88qpeuaj0p8cwh__zj1hw_wztzfivbcaffhvwnibqfhyf1qpyg0.7brco4g0nbapogie7zv1rjg8riclxw70ssxlsacx4uxhl77bp9zer-o4m8fpf7_622b_ovq7lfj5z-zuf2iyeq facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 239 257 https://doi.org/10.2298/fuee2102239c vladimir ćirić, dušan cvetković, nadja gavrilović, natalija stojanović, ivan milentijević2 received september 16, 2020; received in revised form october 28, 2020 corresponding author: vladimir m. ćirič faculty of electronic engineering, computer science department, aleksandra medvedeva 14, 18000 niš, serbia e-mail: vladimir.ciric@elfak.ni.ac.rs facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications tomislav suligoj1, marko koričić1, josip žilak1, hidenori mochizuki2, so-ichi morita2, katsumi shinomura2, hisaya imai2 1university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 9, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) input splits design techniques for network intrusion detection on hadoop cluster university of niš, faculty of electronic engieering, niš, serbia abstract. intrusion detection system (ids) is one of the most important components being used to monitor network for possible cyber-attacks. however, the amount of data that should be inspected imposes a great challenge to idss. with recent emerge of various big data technologies, there are ways for overcoming the problem of the increased amount of data. nevertheless, some of this technologies inherit data distribution techniques that can be a problem when splitting a sensitive data such as network data frames across a cluster nodes. the goal of this paper is design and implementation of hadoop based ids. in this paper we propose different input split techniques suitable for network data distribution across cloud nodes and test the performances of their apache hadoop implementation. four different data split techniques will be proposed and analysed. the techniques will be described in detail. the system will be evaluated on apache hadoop cluster with 17 slave nodes. we will show that processing speed can differ for more than 30% depending on chosen input split design strategy. additionally, we’ll show that malicious level of network traffic can slow down the processing time, in our case, for nearly 20%. the scalability of the system will also be discussed. key words: network intrusion detection, cloud computing, apache hadoop. © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper facta universitatis series: electronics and energetics vol. 34, no 2, june 2021, pp. 239 257 https://doi.org/10.2298/fuee2102239c vladimir ćirić, dušan cvetković, nadja gavrilović, natalija stojanović, ivan milentijević received september 16, 2020; received in revised form october 28, 2020 corresponding author: vladimir m. ćirič faculty of electronic engineering, computer science department, aleksandra medvedeva 14, 18000 niš, serbia e-mail: vladimir.ciric@elfak.ni.ac.rs facta universitatis series: electronics and energetics vol. 28, no 4, december 2015, pp. 507 525 doi: 10.2298/fuee1504507s horizontal current bipolar transistor (hcbt) – a low-cost, high-performance flexible bicmos technology for rf communication applications tomislav suligoj1, marko koričić1, josip žilak1, hidenori mochizuki2, so-ichi morita2, katsumi shinomura2, hisaya imai2 1university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia 2asahi kasei microdevices co. 5-4960, nobeoka, miyazaki, 882-0031, japan abstract. in an overview of horizontal current bipolar transistor (hcbt) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit ft and fmax of 51 ghz and 61 ghz and ftbvceo product of 173 ghzv that are among the highest-performance implanted-base, silicon bipolar transistors. hbct is integrated with cmos in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. due to its specific structure, the charge sharing effect can be employed to increase bvceo without sacrificing ft and fmax. moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage hcbts with breakdowns up to 36 v integrated in the same process flow with high-speed devices, i.e. at zero additional costs. double-balanced active mixer circuit is designed and fabricated in hcbt technology. the maximum iip3 of 17.7 dbm at mixer current of 9.2 ma and conversion gain of -5 db are achieved. key words: bicmos technology, bipolar transistors, horizontal current bipolar transistor, radio frequency integrated circuits, mixer, high-voltage bipolar transistors. 1. introduction in the highly competitive wireless communication markets, the rf circuits and systems are fabricated in the technologies that are very cost-sensitive. in order to minimize the fabrication costs, the sub-10 ghz applications can be processed by using the high-volume silicon technologies. it has been identified that the optimum solution might received march 9, 2015 corresponding author: tomislav suligoj university of zagreb, faculty of electrical engineering and computing, department of electronics, microand nano-electronics laboratory, croatia (e-mail: tom@zemris.fer.hr) input splits design techniques for network intrusion detection on hadoop cluster university of niš, faculty of electronic engieering, niš, serbia abstract. intrusion detection system (ids) is one of the most important components being used to monitor network for possible cyber-attacks. however, the amount of data that should be inspected imposes a great challenge to idss. with recent emerge of various big data technologies, there are ways for overcoming the problem of the increased amount of data. nevertheless, some of this technologies inherit data distribution techniques that can be a problem when splitting a sensitive data such as network data frames across a cluster nodes. the goal of this paper is design and implementation of hadoop based ids. in this paper we propose different input split techniques suitable for network data distribution across cloud nodes and test the performances of their apache hadoop implementation. four different data split techniques will be proposed and analysed. the techniques will be described in detail. the system will be evaluated on apache hadoop cluster with 17 slave nodes. we will show that processing speed can differ for more than 30% depending on chosen input split design strategy. additionally, we’ll show that malicious level of network traffic can slow down the processing time, in our case, for nearly 20%. the scalability of the system will also be discussed. key words: network intrusion detection, cloud computing, apache hadoop. © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper 2 v.ciric et al. 1 introduction the complexity of the internet, diversity of available services, and the desire to expand applications of the global network contribute to its increased insecurity. even with decades of research, and a lot of available security products, the internet has steadily become more and more dangerous [1, 2]. living in the era when everything is connected to the internet requires a different security strategy. when the attack begins, it is irrelevant how the network is configured or what kind of “boxes” network has, or how many security devices are installed. the only thing that matters is who is defending the network. the only way to stay ahead of new vulnerabilities and attacks is through vivid detection and response [3]. unfortunately, constant security monitoring is a key component missing in most networks [4, 5]. intrusion detection system (ids) is one of the most important components used to detect attacks in monitored network traffic [6]. intrusion detection is broadly considered to be a classification problem. based on their classification model idss are classified into signature (or pattern) matching and anomaly based ids. the signature matching ids monitors the network activity for a known misuse pattern that was previously identified as a malicious attempt [6]. having in mind typical bandwidths on the network boundaries, the amount of data that need to be analyzed for malicious signatures becomes challenging. there are ids implementations available that tend to speed up network packet analysis [7–12]. different approaches to task and data parallelism were exploited [9,10,12]. some implementations use multi-core software development frameworks to parallelize the execution on cpu [11], while some utilize gpus [8]. the apache hadoop is a framework for distributed processing of large amount of data on clusters of computers (nodes) using mapreduce programming model, where each node offers local computation and storage [13]. hadoop distributed file system (hdfs) is used for distributed data storage, and it represents a layer above existing file system of every node in cluster used to store input files or parts of them. large files are split into a group of smaller blocks. size of these blocks is fixed, so it is easy for hadoop to index any block within the file [7]. however, this data distribution technique can introduce problems when splitting a sensitive data such as network data frames across a cluster nodes. due to the fixed size of the block, one part of the network packet can end up on one node, while the other part is on the other, making malicious pattern matching challenging [14,15]. 240 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 241240 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 241 2 v.ciric et al. 1 introduction the complexity of the internet, diversity of available services, and the desire to expand applications of the global network contribute to its increased insecurity. even with decades of research, and a lot of available security products, the internet has steadily become more and more dangerous [1, 2]. living in the era when everything is connected to the internet requires a different security strategy. when the attack begins, it is irrelevant how the network is configured or what kind of “boxes” network has, or how many security devices are installed. the only thing that matters is who is defending the network. the only way to stay ahead of new vulnerabilities and attacks is through vivid detection and response [3]. unfortunately, constant security monitoring is a key component missing in most networks [4, 5]. intrusion detection system (ids) is one of the most important components used to detect attacks in monitored network traffic [6]. intrusion detection is broadly considered to be a classification problem. based on their classification model idss are classified into signature (or pattern) matching and anomaly based ids. the signature matching ids monitors the network activity for a known misuse pattern that was previously identified as a malicious attempt [6]. having in mind typical bandwidths on the network boundaries, the amount of data that need to be analyzed for malicious signatures becomes challenging. there are ids implementations available that tend to speed up network packet analysis [7–12]. different approaches to task and data parallelism were exploited [9,10,12]. some implementations use multi-core software development frameworks to parallelize the execution on cpu [11], while some utilize gpus [8]. the apache hadoop is a framework for distributed processing of large amount of data on clusters of computers (nodes) using mapreduce programming model, where each node offers local computation and storage [13]. hadoop distributed file system (hdfs) is used for distributed data storage, and it represents a layer above existing file system of every node in cluster used to store input files or parts of them. large files are split into a group of smaller blocks. size of these blocks is fixed, so it is easy for hadoop to index any block within the file [7]. however, this data distribution technique can introduce problems when splitting a sensitive data such as network data frames across a cluster nodes. due to the fixed size of the block, one part of the network packet can end up on one node, while the other part is on the other, making malicious pattern matching challenging [14,15]. 240 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 241 2 v.ciric et al. 1 introduction the complexity of the internet, diversity of available services, and the desire to expand applications of the global network contribute to its increased insecurity. even with decades of research, and a lot of available security products, the internet has steadily become more and more dangerous [1, 2]. living in the era when everything is connected to the internet requires a different security strategy. when the attack begins, it is irrelevant how the network is configured or what kind of “boxes” network has, or how many security devices are installed. the only thing that matters is who is defending the network. the only way to stay ahead of new vulnerabilities and attacks is through vivid detection and response [3]. unfortunately, constant security monitoring is a key component missing in most networks [4, 5]. intrusion detection system (ids) is one of the most important components used to detect attacks in monitored network traffic [6]. intrusion detection is broadly considered to be a classification problem. based on their classification model idss are classified into signature (or pattern) matching and anomaly based ids. the signature matching ids monitors the network activity for a known misuse pattern that was previously identified as a malicious attempt [6]. having in mind typical bandwidths on the network boundaries, the amount of data that need to be analyzed for malicious signatures becomes challenging. there are ids implementations available that tend to speed up network packet analysis [7–12]. different approaches to task and data parallelism were exploited [9,10,12]. some implementations use multi-core software development frameworks to parallelize the execution on cpu [11], while some utilize gpus [8]. the apache hadoop is a framework for distributed processing of large amount of data on clusters of computers (nodes) using mapreduce programming model, where each node offers local computation and storage [13]. hadoop distributed file system (hdfs) is used for distributed data storage, and it represents a layer above existing file system of every node in cluster used to store input files or parts of them. large files are split into a group of smaller blocks. size of these blocks is fixed, so it is easy for hadoop to index any block within the file [7]. however, this data distribution technique can introduce problems when splitting a sensitive data such as network data frames across a cluster nodes. due to the fixed size of the block, one part of the network packet can end up on one node, while the other part is on the other, making malicious pattern matching challenging [14,15]. input splits design techniques for ids on hadoop cluster 3 several authors already dealt with the problem of ids implementation on hadoop. however, for the best of our knowledge there is no solution that implements ids on hadoop without support of other software tools. in [16,17] the authors used hadoop to analyse logs gathered from well-known snort ids. in [18] the authors proposed hadoop as a distributed database manager, but the main processing isn’t performed by hadoop. the goal of this paper is design and implementation of ids based on apache hadoop, with focus on data splitting and distribution techniques to cluster nodes. in this paper we propose different input split techniques suitable for network data distribution across cloud nodes and test the performances of their apache hadoop implementations. four different data split techniques will be proposed and analysed. the techniques will be described in detail. the ids will be implemented using myers pattern search algorithm as a core for signature-based packet analysis and evaluated on apache hadoop cluster with 17 slave nodes. we will show that processing speed can differ for more than 30% depending on chosen input split design strategy. additionally, we’ll show that malicious level of network traffic can slow down the processing time, in our case, for nearly 20%. the scalability of the system will also be discussed. the paper is organized as follows. section 2 gives a brief introduction to ids. section 3 is devoted to the mapreduce framework, as a basis for the proposed apache hadoop implementation. section 4 is the main section and presents the design of the ids workflow on the hadoop framework. in this section we will discuss the design of data input split techniques, as well. section 5 is devoted to the system evaluation, while in section 6 concluding remarks are given. 2 intrusion detection system background ids monitors network traffic and deploys various techniques in order to provide security services. based on the technique used to assess the network packets as regular or malicious, idss are classified into signature (or pattern) matching and anomaly based idss [11,19,20]. the signature matching ids searches the network traffic for a known misuse pattern that was previously identified as a malicious attempt [7,8]. a database with malicious signatures is prepared in advance. this leads to fast and reliable operation, but these idss are not able to detect new attacks that have not been seen before. the anomaly based detection idss make the decision based on a profile of a normal network behavior, and they are capable of detecting zero day 240 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 241240 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 241 4 v.ciric et al. attacks, with a drawback of possible false positives [20,21]. in this paper we will focus on pattern matching based ids. the workflow of pattern matching based ids is shown in fig. 1 [12,19]. intrusion detection starts with network monitoring, followed by network packet preparation for efficient pattern matching, which is based on the predefined signature database (fig. 1). network monitoring can be performed as packet capture, deep packet inspection and flow-based monitoring. packet capture intercepts a data packet that is crossing over a specific computer network, but it focuses only on packet headers. deep packet inspection (dpi) is an advanced method of packet filtering, which inspects at the application layer of the osi (open systems interconnection) reference model. fig. 1: the typical ids workflow. any signature based ids checks the presence of a malicious signature in the incoming packet sequence and act as instructed by the corresponding rule. snort is a widely used open-source ids based on pattern matching [11]. the pattern matching algorithm must be fast enough in order to support the network link speed. there are various implementations of pattern matching algorithms [7–12]. we will use myers pattern search algorithm for dpi packets inspection, with rules in snort syntax as proposed in [12]. in order to speed up pattern matching, in this paper we choose apache hadoop distributed environment, with focus on network traffic data distribution across the nodes. 3 apache hadoop hdfs and mapreduce the apache hadoop is a framework for distributed computing based on mapreduce programming model, where each computer in a hadoop cluster (node) offers local computation and storage [13]. the apache hadoop cluster consists of one master and many slave nodes. the apache hadoop is available in versions 1.x and 2.x. there are two main components of hadoop 1.x system: hadoop distributed file system (hdfs), used for distributed data 242 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 243242 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 243 4 v.ciric et al. attacks, with a drawback of possible false positives [20,21]. in this paper we will focus on pattern matching based ids. the workflow of pattern matching based ids is shown in fig. 1 [12,19]. intrusion detection starts with network monitoring, followed by network packet preparation for efficient pattern matching, which is based on the predefined signature database (fig. 1). network monitoring can be performed as packet capture, deep packet inspection and flow-based monitoring. packet capture intercepts a data packet that is crossing over a specific computer network, but it focuses only on packet headers. deep packet inspection (dpi) is an advanced method of packet filtering, which inspects at the application layer of the osi (open systems interconnection) reference model. fig. 1: the typical ids workflow. any signature based ids checks the presence of a malicious signature in the incoming packet sequence and act as instructed by the corresponding rule. snort is a widely used open-source ids based on pattern matching [11]. the pattern matching algorithm must be fast enough in order to support the network link speed. there are various implementations of pattern matching algorithms [7–12]. we will use myers pattern search algorithm for dpi packets inspection, with rules in snort syntax as proposed in [12]. in order to speed up pattern matching, in this paper we choose apache hadoop distributed environment, with focus on network traffic data distribution across the nodes. 3 apache hadoop hdfs and mapreduce the apache hadoop is a framework for distributed computing based on mapreduce programming model, where each computer in a hadoop cluster (node) offers local computation and storage [13]. the apache hadoop cluster consists of one master and many slave nodes. the apache hadoop is available in versions 1.x and 2.x. there are two main components of hadoop 1.x system: hadoop distributed file system (hdfs), used for distributed data 242 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 243 4 v.ciric et al. attacks, with a drawback of possible false positives [20,21]. in this paper we will focus on pattern matching based ids. the workflow of pattern matching based ids is shown in fig. 1 [12,19]. intrusion detection starts with network monitoring, followed by network packet preparation for efficient pattern matching, which is based on the predefined signature database (fig. 1). network monitoring can be performed as packet capture, deep packet inspection and flow-based monitoring. packet capture intercepts a data packet that is crossing over a specific computer network, but it focuses only on packet headers. deep packet inspection (dpi) is an advanced method of packet filtering, which inspects at the application layer of the osi (open systems interconnection) reference model. fig. 1: the typical ids workflow. any signature based ids checks the presence of a malicious signature in the incoming packet sequence and act as instructed by the corresponding rule. snort is a widely used open-source ids based on pattern matching [11]. the pattern matching algorithm must be fast enough in order to support the network link speed. there are various implementations of pattern matching algorithms [7–12]. we will use myers pattern search algorithm for dpi packets inspection, with rules in snort syntax as proposed in [12]. in order to speed up pattern matching, in this paper we choose apache hadoop distributed environment, with focus on network traffic data distribution across the nodes. 3 apache hadoop hdfs and mapreduce the apache hadoop is a framework for distributed computing based on mapreduce programming model, where each computer in a hadoop cluster (node) offers local computation and storage [13]. the apache hadoop cluster consists of one master and many slave nodes. the apache hadoop is available in versions 1.x and 2.x. there are two main components of hadoop 1.x system: hadoop distributed file system (hdfs), used for distributed data input splits design techniques for ids on hadoop cluster 5 storage, and mapreduce computing framework for data manipulation. the architecture of hadoop 2.x adds yarn (yet another resource negotiator) as an extension for resource management. the hdfs is an abstraction of all file systems of cluster nodes, which creates an illusion of common data file storage. large files are split into a group of smaller parts called blocks (default block size is 64mb) [13]. the size of blocks is fixed, due to the simplification of indexing. the hdfs is master-slave architecture, based on the existence of two types of (linux) deamons: datanode and namenode (fig. 2). namenode is executed on the master node and it is responsible for managing datanodes (slaves) [13]. fig. 2: hdfs components and their communication the namenode is also responsible for taking care of the replication factor of data blocks. the replication factor contributes to data fault tolerance by creating a several copies of each block across the cluster. in fig. 2 the replication factor is 2 (default replication factor is 3). in case of the datanode failure, the namenode chooses new datanodes for new replicas, balances disk usage and manages the communication traffic to the datanodes [13]. typical hadoop workflow has 4 parts: (1) transferring input data from client host to hdfs, (2) processing data using mapreduce framework on the slave nodes, (3) storing results on hdfs, and (4) reading data by client host from hdfs. mapreduce is programming model for distributed data processing, where the map function is applied on every data element in parallel, followed by the reduce function that summarize the collections of intermediate results produced by the map functions. mapreduce paradigm assumes that there 242 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 243242 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 243 6 v.ciric et al. are no data dependencies between any given instance of the map functions. the map and reduce functions are implemented in hadoop as follows. before the beginning of execution, the input data files must be added to the hdfs. the beginning of the data processing itself is the determination of the logical units that will be processed input splits. the most common case is that one input split corresponds to one block on hdfs, but it is not necessary to be so. in case the data requires it, the partitioning of data to input splits can be done differently, through a special implementation of the inputformat class that will create them [14,15]. all input and output data are given in key-value pairs < k, v >. the default behavior is to use textinputformat, where the key is an offset in bytes from the beginning of file, and the value is the content of one line of the file. the binary files can be used as well. one map task processes one input split (fig. 3). each input split is divided into records, which are represented as key-value pairs < ki, vj >. each pair is processed by a map task with one call of the map function. the map function takes one keyvalue pair < ki, vj > and executes given operations on them. it produces the intermediate results also in the form of key-value pairs < kn, vm > (fig. 3). those results are then grouped in such manner that all pairs having the same key are sent to the same reducer. reducer summarizes all data with the same key in order to get the final result (fig. 3). fig. 3: the mapreduce execution in order to design an efficient hadoop based ids, due to the fixed size nature of hdfs data blocks, in this paper we’ll focus on experimenting with 244 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 245244 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 245 6 v.ciric et al. are no data dependencies between any given instance of the map functions. the map and reduce functions are implemented in hadoop as follows. before the beginning of execution, the input data files must be added to the hdfs. the beginning of the data processing itself is the determination of the logical units that will be processed input splits. the most common case is that one input split corresponds to one block on hdfs, but it is not necessary to be so. in case the data requires it, the partitioning of data to input splits can be done differently, through a special implementation of the inputformat class that will create them [14,15]. all input and output data are given in key-value pairs < k, v >. the default behavior is to use textinputformat, where the key is an offset in bytes from the beginning of file, and the value is the content of one line of the file. the binary files can be used as well. one map task processes one input split (fig. 3). each input split is divided into records, which are represented as key-value pairs < ki, vj >. each pair is processed by a map task with one call of the map function. the map function takes one keyvalue pair < ki, vj > and executes given operations on them. it produces the intermediate results also in the form of key-value pairs < kn, vm > (fig. 3). those results are then grouped in such manner that all pairs having the same key are sent to the same reducer. reducer summarizes all data with the same key in order to get the final result (fig. 3). fig. 3: the mapreduce execution in order to design an efficient hadoop based ids, due to the fixed size nature of hdfs data blocks, in this paper we’ll focus on experimenting with 244 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 245 6 v.ciric et al. are no data dependencies between any given instance of the map functions. the map and reduce functions are implemented in hadoop as follows. before the beginning of execution, the input data files must be added to the hdfs. the beginning of the data processing itself is the determination of the logical units that will be processed input splits. the most common case is that one input split corresponds to one block on hdfs, but it is not necessary to be so. in case the data requires it, the partitioning of data to input splits can be done differently, through a special implementation of the inputformat class that will create them [14,15]. all input and output data are given in key-value pairs < k, v >. the default behavior is to use textinputformat, where the key is an offset in bytes from the beginning of file, and the value is the content of one line of the file. the binary files can be used as well. one map task processes one input split (fig. 3). each input split is divided into records, which are represented as key-value pairs < ki, vj >. each pair is processed by a map task with one call of the map function. the map function takes one keyvalue pair < ki, vj > and executes given operations on them. it produces the intermediate results also in the form of key-value pairs < kn, vm > (fig. 3). those results are then grouped in such manner that all pairs having the same key are sent to the same reducer. reducer summarizes all data with the same key in order to get the final result (fig. 3). fig. 3: the mapreduce execution in order to design an efficient hadoop based ids, due to the fixed size nature of hdfs data blocks, in this paper we’ll focus on experimenting with input splits design techniques for ids on hadoop cluster 7 different techniques of dividing the input data into input splits. 4 design of hadoop based ids the architecture of the proposed ids is shown in fig. 4. the proposed architecture uses available snort rules database and distributes pattern search across the hadoop cluster. due to the default behavior of hdfs to split the data into a fixed size blocks, and the nature of network protocols to have a packets of different sizes, the crucial design decision is how the packets on block boundaries will be handled. having this in mind, we introduced pcap input format packet in the architecture from fig. 4, which will allow us to experiment with different approaches by abstracting the inputformat class mentioned in the previous section. fig. 4: the architecture of the proposed ids the ids packet from fig. 4 is a central part that implements mapreduce pattern search through captured network traffic using myers algorithm [12]. we chose the standard pcap format for capturing and storing the network traffic [3]. the architecture’s packet pcap input format from fig. 4 is specialized for controlling the boundaries of the input splits, while pcap input counter tests the validity of its execution. the snort rules parser creates a distributed cache out of snort rules that will be used as an input in the pattern search algorithm. the pattern search algorithm itself is implemented in the tests packet, while utils provide pcap network traffic decoding functionalities. 244 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 245244 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 245 8 v.ciric et al. 4.1 the input file format de facto standard for network traffic capture and storage is pcap file format, which is used by various well known network tools such as wireshark, tcpdump, libcap, etc. [3]. the internal structure of pcap file is given in fig. 5. the file begins with global header, after which the particular network traffic packets follow. global header contains, among the others, two important information (fig. 5): the network protocol of the stored packets (network), and the maximum length of the stored packets (snaplen). the network protocol is in the most of cases ethernet protocol, but it can be ip or any other. the maximum length of the stored packets is the feature that enables storage of the beginning of the packets only, for the sake of efficiency, in the cases when only headers are required. in such cases snaplen value is less then the value indicating original packet len in the actual header of the packet, showing that only the first snaplen bytes of the packet are stored. each packet header from fig. 5 contains the information about the stored network packet and should not be confused with actual network protocol header. the packet header from fig. 5 contains pcap information about the time when the packet is captured (ts sec and ts usec), and its length (incl len and orig len). fig. 5: the internal structure of pcap file as network protocol packets can have variable length (from few bytes to several tens of kb, depending on protocol), and hdfs blocks are of the fixed size, the fields incl len and orig len are of the great importance for the proposed system. the incl len field represents the length of the packet in bytes as it is stored in the pcap file, while the orig len field gives its original length in bytes as seen on the network. for each packet the following relation stands incl len ≤ snap len ≤ orig len, (1) where only the first incl len bytes of each packet are captured in the pcap file. here we will demonstrate and compare several techniques for input splits design, having in mind variable nature of network traffic packets. 246 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 247246 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 247 8 v.ciric et al. 4.1 the input file format de facto standard for network traffic capture and storage is pcap file format, which is used by various well known network tools such as wireshark, tcpdump, libcap, etc. [3]. the internal structure of pcap file is given in fig. 5. the file begins with global header, after which the particular network traffic packets follow. global header contains, among the others, two important information (fig. 5): the network protocol of the stored packets (network), and the maximum length of the stored packets (snaplen). the network protocol is in the most of cases ethernet protocol, but it can be ip or any other. the maximum length of the stored packets is the feature that enables storage of the beginning of the packets only, for the sake of efficiency, in the cases when only headers are required. in such cases snaplen value is less then the value indicating original packet len in the actual header of the packet, showing that only the first snaplen bytes of the packet are stored. each packet header from fig. 5 contains the information about the stored network packet and should not be confused with actual network protocol header. the packet header from fig. 5 contains pcap information about the time when the packet is captured (ts sec and ts usec), and its length (incl len and orig len). fig. 5: the internal structure of pcap file as network protocol packets can have variable length (from few bytes to several tens of kb, depending on protocol), and hdfs blocks are of the fixed size, the fields incl len and orig len are of the great importance for the proposed system. the incl len field represents the length of the packet in bytes as it is stored in the pcap file, while the orig len field gives its original length in bytes as seen on the network. for each packet the following relation stands incl len ≤ snap len ≤ orig len, (1) where only the first incl len bytes of each packet are captured in the pcap file. here we will demonstrate and compare several techniques for input splits design, having in mind variable nature of network traffic packets. 246 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 247 8 v.ciric et al. 4.1 the input file format de facto standard for network traffic capture and storage is pcap file format, which is used by various well known network tools such as wireshark, tcpdump, libcap, etc. [3]. the internal structure of pcap file is given in fig. 5. the file begins with global header, after which the particular network traffic packets follow. global header contains, among the others, two important information (fig. 5): the network protocol of the stored packets (network), and the maximum length of the stored packets (snaplen). the network protocol is in the most of cases ethernet protocol, but it can be ip or any other. the maximum length of the stored packets is the feature that enables storage of the beginning of the packets only, for the sake of efficiency, in the cases when only headers are required. in such cases snaplen value is less then the value indicating original packet len in the actual header of the packet, showing that only the first snaplen bytes of the packet are stored. each packet header from fig. 5 contains the information about the stored network packet and should not be confused with actual network protocol header. the packet header from fig. 5 contains pcap information about the time when the packet is captured (ts sec and ts usec), and its length (incl len and orig len). fig. 5: the internal structure of pcap file as network protocol packets can have variable length (from few bytes to several tens of kb, depending on protocol), and hdfs blocks are of the fixed size, the fields incl len and orig len are of the great importance for the proposed system. the incl len field represents the length of the packet in bytes as it is stored in the pcap file, while the orig len field gives its original length in bytes as seen on the network. for each packet the following relation stands incl len ≤ snap len ≤ orig len, (1) where only the first incl len bytes of each packet are captured in the pcap file. here we will demonstrate and compare several techniques for input splits design, having in mind variable nature of network traffic packets. input splits design techniques for ids on hadoop cluster 9 4.2 input split techniques we performed experiments with four different input split designs. within the first design technique we use textual file as an input, while in the next three techniques we use binary file format with different network packet and hdfs data block aligning techniques. technique 1 tshark packet pre-decoding the simplest solution regarding the implementation of the map and reduce functions is to use input file in textual format, and to pre-decode captured network traffic prior to placing the input file on the hdfs. the paper [12] deals with this particular type of implementation. as malicious attempts can be recognized from their signatures in the form of character or byte arrays, pcap file should be decoded in order to obtain data in plain text from all headers of encapsulating network protocols (i.e. ethernet, ip, and tcp), including data carried by the application layer. in this case it is not necessary to implement custom hadoop inputformat, but the textinputformat can be used instead. we use tshark linux command line tool for network traffic decoding. the example of tshark tool usage is: tshark -r -t fields -e separator=, -e ip.addr -e ws.col.protocol -e tcp.port -e udp.port -e data > output.txt each line in the output.txt contains the information from one fetched network packet, which now represents the input file for hdfs. the input file is divided in input splits, and each map task is fed by one input split. the map function implemented to support this technique takes one line at the time, and executes the pattern search algorithm. if some of the snort rules match the malicious network packet, the mapper emits < key, value > pair, where the key stands for the attack identification, while the value is constant 1. having the same key, the results from the same malicious flow go to the same reducer, which counts the malicious packets in the flow and outputs the result. the advantage of this approach is ease of hadoop implementation, with the drawback that packet decoding have to be done prior the beginning of hadoop program and pattern search. technique 2 custom inputformat for pcap input in order to overcome disadvantages of the previous technique, pcap file have to be used in the original binary format, without pre-decoding. this can 246 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 247246 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 247 10 v.ciric et al. be achieved by implementation of custom hadoop inputformat that will process pcap files. two considerations should be taken into account: (1) how to divide the input file into input splits? (2) how to read records from an input split and feed them into the map function? during the input file processing and creation of each input split, in this technique we ensured that the boundary between each two adjacent input splits is exactly at the boundary between two packets (fig. 6). we crawled the pcap file package by package until the configured block size limit (fig. 6). at that point, a new input split is created. since the division is performed at the packet boundaries, the sizes of the obtained input splits can differ from each other, but no more than the maximum length of one packet, which is 1536 bytes for ethernet). fig. 6: dividing the pcap file into input splits: (1) correct boundary, (2) incorrect boundary in order to perform pattern search within the map function, the map function requires both the packet header and the packet data. the output from the mapper is in the form < key, value >, where the key is the offset of the beginning of the packet header, and the value is the whole packet in its original binary format. in this approach the mapper itself decodes the binary packet and locates all required data (ip addresses, ports, payload, etc.), making the decoding distributed operation, as well. as myers algorithm natively works with bytes, mapper only have to decode the packet up to the application layer (to find ip addresses and port numbers), but not the application layer payload itself, which, compared to tshark, reduces the number of operations required for decoding. 248 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 249248 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 249 10 v.ciric et al. be achieved by implementation of custom hadoop inputformat that will process pcap files. two considerations should be taken into account: (1) how to divide the input file into input splits? (2) how to read records from an input split and feed them into the map function? during the input file processing and creation of each input split, in this technique we ensured that the boundary between each two adjacent input splits is exactly at the boundary between two packets (fig. 6). we crawled the pcap file package by package until the configured block size limit (fig. 6). at that point, a new input split is created. since the division is performed at the packet boundaries, the sizes of the obtained input splits can differ from each other, but no more than the maximum length of one packet, which is 1536 bytes for ethernet). fig. 6: dividing the pcap file into input splits: (1) correct boundary, (2) incorrect boundary in order to perform pattern search within the map function, the map function requires both the packet header and the packet data. the output from the mapper is in the form < key, value >, where the key is the offset of the beginning of the packet header, and the value is the whole packet in its original binary format. in this approach the mapper itself decodes the binary packet and locates all required data (ip addresses, ports, payload, etc.), making the decoding distributed operation, as well. as myers algorithm natively works with bytes, mapper only have to decode the packet up to the application layer (to find ip addresses and port numbers), but not the application layer payload itself, which, compared to tshark, reduces the number of operations required for decoding. 248 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 249 10 v.ciric et al. be achieved by implementation of custom hadoop inputformat that will process pcap files. two considerations should be taken into account: (1) how to divide the input file into input splits? (2) how to read records from an input split and feed them into the map function? during the input file processing and creation of each input split, in this technique we ensured that the boundary between each two adjacent input splits is exactly at the boundary between two packets (fig. 6). we crawled the pcap file package by package until the configured block size limit (fig. 6). at that point, a new input split is created. since the division is performed at the packet boundaries, the sizes of the obtained input splits can differ from each other, but no more than the maximum length of one packet, which is 1536 bytes for ethernet). fig. 6: dividing the pcap file into input splits: (1) correct boundary, (2) incorrect boundary in order to perform pattern search within the map function, the map function requires both the packet header and the packet data. the output from the mapper is in the form < key, value >, where the key is the offset of the beginning of the packet header, and the value is the whole packet in its original binary format. in this approach the mapper itself decodes the binary packet and locates all required data (ip addresses, ports, payload, etc.), making the decoding distributed operation, as well. as myers algorithm natively works with bytes, mapper only have to decode the packet up to the application layer (to find ip addresses and port numbers), but not the application layer payload itself, which, compared to tshark, reduces the number of operations required for decoding. input splits design techniques for ids on hadoop cluster 11 technique 3 custom inputformatwith probabilistic packet boundary detection although the previous technique is much better than tshark packets decoding due to its distributed packet decoding, it still crawls from packet to packet through the pcap file with aim to align the boundary of the input split with the boundary of the packet. in order to do so, it loads each network packet into the memory. this takes time before the start of ”useful” distributed processing, and slows down whole processing. in order to avoid this bottleneck we propose the third technique probabilistic packet boundary detection, where we assume that pcap file contains the network packets captured only on the data link layer of the osi reference model, i.e. that each ”packet” in the pcap file is ethernet frame. let the hdfs block size be z bytes. here we propose not to load all z bytes into the memory in order to find the boundary between the input splits, but rather to skip the first x (x < z) bytes (fig. 7). the question now is whether the boundary between the network packets lies on the chosen offset of x bytes? if so, then for the next package in the pcap file eq. (1) should stand. this practically means that the value on the position of the orig len field should be greater than zero, that the value of the inc len field should be within the valid limits of the ethernet frame size, and that the value of the inc len field should be less than or equal to the value of the orig len field. other fields in the package itself must be valid, too. a suitable place for additional check is where the ethertype field in the header of the ethernet frame should be. this value should be compared with the value that indicates the ethernet protocol. this is highly probabilistic and fuzzy way of boundary detection, and a few verified fields can mislead us by giving us a false positive answer. thus, we check the same conditions for the following k packets (up to the packet denoted as pn+k in fig. 7). if all conditions stand for the next k packets, we declare the boundary between the packets found, and create the input split. in order to perform mentioned additional checks on the next k packets, after skipping the offset of x bytes we load the following y bytes, as it is shown in fig. 7. let us note that y ≪ x. this can be used to form a probabilistic algorithm as follows: (1) if the verified conditions stand for the next k packets, we assume that the correct boundary between the input splits is on the x-th offset; (2) if the conditions don’t stand at least for one of the k packages, the offset x is not the correct limit, and the offset of x + 1-st byte should be examined (fig. 7). in the 248 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 249248 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 249 12 v.ciric et al. fig. 7: probabilistic method for packets boundaries detection worst case scenario the number of offsets that should be examined is equal to the maximum length of ethernet frame, which is not a problem having in mind that we already have y bytes from pcap loaded and available. even in this case, it is much less than loading and processing of all z bytes. with the careful selection of the parameters x, y and k, high degree of certainty of the proposed technique can be reached. in our implementation we selected the following parameters: z = 128mb, x = 123mb and y = 5mb. in the portion of y = 5mb there are more than 3.000 ethernet frames, more then enough for us not to obtain any false positive, while loading only 4% of the pcap file. technique 4 custom inputformat with aligned blocks and input splits the previous technique has an important drawback regarding the way how the hdfs operates in the case of unequal sizes of blocks and input splits. in any case, the hdfs block size is constant. if the input split size is less than the block size, as it is in the previous technique, the boundary of the input split will not be aligned with the block boundary, forcing the hdfs to fill the remaining space with the next input split. that input split will be divided having a small portion in one block and a larger portion in the next block. the case when one input split resides in two blocks will force the hadoop to copy both blocks on the node where the mapper who processes the particular input split is executed. this can cause large and unnecessary network traffic while copying the blocks. to overcome this issue and prevent unnecessary blocks copying, we propose the fourth technique where we have a custom inputformat and the exact same sizes of blocks and input splits (fig. 8). now, the boundaries 250 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 251250 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 251 12 v.ciric et al. fig. 7: probabilistic method for packets boundaries detection worst case scenario the number of offsets that should be examined is equal to the maximum length of ethernet frame, which is not a problem having in mind that we already have y bytes from pcap loaded and available. even in this case, it is much less than loading and processing of all z bytes. with the careful selection of the parameters x, y and k, high degree of certainty of the proposed technique can be reached. in our implementation we selected the following parameters: z = 128mb, x = 123mb and y = 5mb. in the portion of y = 5mb there are more than 3.000 ethernet frames, more then enough for us not to obtain any false positive, while loading only 4% of the pcap file. technique 4 custom inputformat with aligned blocks and input splits the previous technique has an important drawback regarding the way how the hdfs operates in the case of unequal sizes of blocks and input splits. in any case, the hdfs block size is constant. if the input split size is less than the block size, as it is in the previous technique, the boundary of the input split will not be aligned with the block boundary, forcing the hdfs to fill the remaining space with the next input split. that input split will be divided having a small portion in one block and a larger portion in the next block. the case when one input split resides in two blocks will force the hadoop to copy both blocks on the node where the mapper who processes the particular input split is executed. this can cause large and unnecessary network traffic while copying the blocks. to overcome this issue and prevent unnecessary blocks copying, we propose the fourth technique where we have a custom inputformat and the exact same sizes of blocks and input splits (fig. 8). now, the boundaries 250 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 251 12 v.ciric et al. fig. 7: probabilistic method for packets boundaries detection worst case scenario the number of offsets that should be examined is equal to the maximum length of ethernet frame, which is not a problem having in mind that we already have y bytes from pcap loaded and available. even in this case, it is much less than loading and processing of all z bytes. with the careful selection of the parameters x, y and k, high degree of certainty of the proposed technique can be reached. in our implementation we selected the following parameters: z = 128mb, x = 123mb and y = 5mb. in the portion of y = 5mb there are more than 3.000 ethernet frames, more then enough for us not to obtain any false positive, while loading only 4% of the pcap file. technique 4 custom inputformat with aligned blocks and input splits the previous technique has an important drawback regarding the way how the hdfs operates in the case of unequal sizes of blocks and input splits. in any case, the hdfs block size is constant. if the input split size is less than the block size, as it is in the previous technique, the boundary of the input split will not be aligned with the block boundary, forcing the hdfs to fill the remaining space with the next input split. that input split will be divided having a small portion in one block and a larger portion in the next block. the case when one input split resides in two blocks will force the hadoop to copy both blocks on the node where the mapper who processes the particular input split is executed. this can cause large and unnecessary network traffic while copying the blocks. to overcome this issue and prevent unnecessary blocks copying, we propose the fourth technique where we have a custom inputformat and the exact same sizes of blocks and input splits (fig. 8). now, the boundaries input splits design techniques for ids on hadoop cluster 13 of input splits are not aligned with the boundaries of network packets in most cases, and they split some packets into two parts (fig. 8). therefore, we will ignore the split packets as invalid. they intentionally will not be processed further through the mapreduce framework, leaving the small chance of false negative response of our network intrusion detection system for the sake of speed gain by avoiding of unnecessary block copying. in the worst case, the number of packets that will not be processed can be equal to the number of input splits, i.e. one invalid packet per input split (roughly one ethernet frame per 100.000 frames will be ignored). the problem that remains is finding valid beginning of the first packet within the input split, and this is a reason for having a custom inputformat within this technique, too. to find the first valid packet in input split, we use the same probabilistic algorithm as in the previous technique, and we search through the first y bytes of the input split for the valid beginning of ethernet frame (fig. 8). fig. 8: aligned blocks and input splits 5 implementation results the proposed techniques are suitable for implementation in both hadoop 1.x and 2.x without any restrictions. in order to evaluate the proposed techniques, the ids is implemented in apache hadoop 1.x and 2.x, and tested on a cluster with 18 commodity nodes, where 1 node is a master while the rest 17 nodes are slaves. the nodes are equipped with intel(r)core(tm)2 duo, cpu e4600@2.40ghz, and 1gb of ram. in order to compare the performances of the proposed hadoop ids with the reference snort ids, evaluation of the technique 1 is done in single-processor environment, because the snort ids doesn’t support distributed execution. for that purpose we used an environment with i3 6006u cpu and 8gb ram. the processor e4600 has 2 cores and operates at 2.4ghz, with whetstone benchmark results 2.25 flops per core, i.e. 4.50 flops in total. the processor i3 6006u has 4 250 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 251250 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 251 14 v.ciric et al. cores at 2.00ghz, with whetstone benchmark results 2.08 per core, i.e. 8.31 in total [22]. we used input pcap files of variable sizes with 1, 2, 3, 4, and 5gb of network traffic data, having ”low”, ”medium”, and ”high” number of malicious packets (less than 1%, 30-40%, and more than 70%, respectively). we also varied the number of snort rules and the number of slave nodes in the cluster. the proposed hadoop ids with technique 1 for input splits preparation (tshark packet pre-decoding) is evaluated in hadoop 2.9.0, in pseudodistributed environment on the previously mentioned single-processor system, along with the snort ids. the results are given in table 1. input file size [gb] preprocessing time [s] pattern search time [s] total processing time [s] snort ids 1 0 120 120 hadoop ids 1.6 211 94 305 table 1: hadoop ids with tshark packet pre-decoding vs. snort ids the used input pcap file size is 1gb, and it contained about 2 million network packets with ”medium” number of malicious packets. as it can be seen from table 1, packet pre-decoding increased the file size from 1gb to 1.6gb. nevertheless, the proposed ids has 21% faster pattern search time than the snort (94s vs. 120s). this is due to the fact that the execution of hadoop ids takes advantage of multi-core cpu, while the snort doesn’t. however, the time required for tshark packet pre-decoding took more than 3 minutes (211 seconds), giving the total processing time for hadoop 2.5 times slower than the snort ids. for the job execution purposes hadoop 2.x requests three different kinds of containers from yarn: the application master container, map containers, and reduce containers. application master itself requires 1.5gb or ram by default, making hadoop 2.x suitable for large clusters with a lot of resources. the proposed techniques 2, 3 and 4 are evaluated in hadoop 1.2.1 environment, due to the lower resource requirements. for the independent variables in the experiment we chose input pcap file size, the level of malicious packets, the number of snort rules in the database, and the number of slave nodes. as dependant variables we obtained the total execution time, the total number of map tasks, as well as the number of data local and rack local1 map 1data local map task is a map task which has data block already locally available on the node where it executes prior to the execution, while rack local map task needs to fetch the data block from the other slave node. 252 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 253252 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 253 14 v.ciric et al. cores at 2.00ghz, with whetstone benchmark results 2.08 per core, i.e. 8.31 in total [22]. we used input pcap files of variable sizes with 1, 2, 3, 4, and 5gb of network traffic data, having ”low”, ”medium”, and ”high” number of malicious packets (less than 1%, 30-40%, and more than 70%, respectively). we also varied the number of snort rules and the number of slave nodes in the cluster. the proposed hadoop ids with technique 1 for input splits preparation (tshark packet pre-decoding) is evaluated in hadoop 2.9.0, in pseudodistributed environment on the previously mentioned single-processor system, along with the snort ids. the results are given in table 1. input file size [gb] preprocessing time [s] pattern search time [s] total processing time [s] snort ids 1 0 120 120 hadoop ids 1.6 211 94 305 table 1: hadoop ids with tshark packet pre-decoding vs. snort ids the used input pcap file size is 1gb, and it contained about 2 million network packets with ”medium” number of malicious packets. as it can be seen from table 1, packet pre-decoding increased the file size from 1gb to 1.6gb. nevertheless, the proposed ids has 21% faster pattern search time than the snort (94s vs. 120s). this is due to the fact that the execution of hadoop ids takes advantage of multi-core cpu, while the snort doesn’t. however, the time required for tshark packet pre-decoding took more than 3 minutes (211 seconds), giving the total processing time for hadoop 2.5 times slower than the snort ids. for the job execution purposes hadoop 2.x requests three different kinds of containers from yarn: the application master container, map containers, and reduce containers. application master itself requires 1.5gb or ram by default, making hadoop 2.x suitable for large clusters with a lot of resources. the proposed techniques 2, 3 and 4 are evaluated in hadoop 1.2.1 environment, due to the lower resource requirements. for the independent variables in the experiment we chose input pcap file size, the level of malicious packets, the number of snort rules in the database, and the number of slave nodes. as dependant variables we obtained the total execution time, the total number of map tasks, as well as the number of data local and rack local1 map 1data local map task is a map task which has data block already locally available on the node where it executes prior to the execution, while rack local map task needs to fetch the data block from the other slave node. 252 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 253 14 v.ciric et al. cores at 2.00ghz, with whetstone benchmark results 2.08 per core, i.e. 8.31 in total [22]. we used input pcap files of variable sizes with 1, 2, 3, 4, and 5gb of network traffic data, having ”low”, ”medium”, and ”high” number of malicious packets (less than 1%, 30-40%, and more than 70%, respectively). we also varied the number of snort rules and the number of slave nodes in the cluster. the proposed hadoop ids with technique 1 for input splits preparation (tshark packet pre-decoding) is evaluated in hadoop 2.9.0, in pseudodistributed environment on the previously mentioned single-processor system, along with the snort ids. the results are given in table 1. input file size [gb] preprocessing time [s] pattern search time [s] total processing time [s] snort ids 1 0 120 120 hadoop ids 1.6 211 94 305 table 1: hadoop ids with tshark packet pre-decoding vs. snort ids the used input pcap file size is 1gb, and it contained about 2 million network packets with ”medium” number of malicious packets. as it can be seen from table 1, packet pre-decoding increased the file size from 1gb to 1.6gb. nevertheless, the proposed ids has 21% faster pattern search time than the snort (94s vs. 120s). this is due to the fact that the execution of hadoop ids takes advantage of multi-core cpu, while the snort doesn’t. however, the time required for tshark packet pre-decoding took more than 3 minutes (211 seconds), giving the total processing time for hadoop 2.5 times slower than the snort ids. for the job execution purposes hadoop 2.x requests three different kinds of containers from yarn: the application master container, map containers, and reduce containers. application master itself requires 1.5gb or ram by default, making hadoop 2.x suitable for large clusters with a lot of resources. the proposed techniques 2, 3 and 4 are evaluated in hadoop 1.2.1 environment, due to the lower resource requirements. for the independent variables in the experiment we chose input pcap file size, the level of malicious packets, the number of snort rules in the database, and the number of slave nodes. as dependant variables we obtained the total execution time, the total number of map tasks, as well as the number of data local and rack local1 map 1data local map task is a map task which has data block already locally available on the node where it executes prior to the execution, while rack local map task needs to fetch the data block from the other slave node. input splits design techniques for ids on hadoop cluster 15 tasks. fig. 9 shows the evaluation results of the techniques 2, 3 and 4 for 1gb input file size with low level of malicious packets, on a cluster with 17 slave nodes, and the snort database with 1000 rules. the results are as expected: the hadoop ids with input split technique 4 has the best execution time (fig. 9a). in this case it performs 32% faster then the proposed technique 2 (170 vs. 250 in fig. 9a). the number of datalocal and racklocal blocks confirm the design hypothesis about additional block copying (fig. 9b). the techniques 2 and 4 have the same number of map tasks due to the fact that both techniques force the size of the input split to be exact (tcq4) or very close to the size of a block (tcq2), while tcq3 introduces the greatest deviation between the size of an input split and a block. tcq2 tcq3 tcq4 0 100 200 250 187 170 a) [s] maptasks datalocal racklocal 0 10 20 17 13 4 20 15 5 17 13 4 b) [#] tcq2 tcq3 tcq4 fig. 9: evaluation results of different input split design techniques: a) total processing time for techniques 2, 3 and 4, b) map tasks and blocks distribution across the cluster we also evaluated how the technique 4 performs with variable malicious level of input pcap file and variable file size, how it performs with variable number of snort rules in database, and how it performs in the clusters with different number of slave nodes. the evaluation results are given in fig. 10. for better introspection, we used the same parameters for the starting points of graphics in figs. 10 a) and b) as in fig. 9 a): tcq4, snort database with 1000 rules, input file size 1gb, and low pcap malicious level. figs. 10 b), c), and d) have one common point, as well. from fig. 10 a) it can be seen that the total execution time strongly depends on the number of malicious attempts in the network traffic flow. in this case the total execution time differs for 18% (202 vs. 170 in fig. 10a). this is not a consequence of the choice of pattern search algorithm, but 252 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 253252 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 253 16 v.ciric et al. low medium high 100 200 300 170 182 202 a) malicious level of pcap to ta l ex ec u ti on ti m e [s ] f=1gb;sr=1000 1 2 3 4 5 100 200 300 170 182 230 280 335 b) input pcap file size [gb] to ta l ex ec u ti on ti m e [s ] m=low;sr=1000 200 400 600 800 1000 100 200 300 127 158 190 255 335 c) the number of snort rules to ta l ex ec u ti on ti m e [s ] f=5gb;m=low 5 9 13 17 200 400 600 800 807 461 343 335 d) the number of slave nodes to ta l ex ec u ti on ti m e [s ] f=5gb;m=low fig. 10: evaluation of the tcq4 with variable parameters: a) variable number of malicious packets in pcap, b) variable input pcap file size, c) variable number of snort rules, d) variable size of the cluster. rather the consequence of snort rules database structure. the used myers algorithm has a stabile execution time which is not affected by the contents of neither text nor pattern [12]. the snort database is hierarchically organized, having rules categorized in levels from general to specific. for example, if the protocol is not http, the sql injection rules are not going to be examined. thus, for the low malicious pcap a lot of packets are simply skipped after ports and protocols check, and the myers search algorithm is not started for them. if the monitored traffic contains a lot of packets that fall into ”suspicious” category, one or more additional pattern searches are going to be performed, depending on the number of specific rules bound to matched general rule. this directly reflects the results from fig. 10a. let us note that ids process in general can be strongly affected with the choice of the pattern search algorithm, as well as with the specifics of 254 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 255254 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 255 16 v.ciric et al. low medium high 100 200 300 170 182 202 a) malicious level of pcap to ta l ex ec u ti on ti m e [s ] f=1gb;sr=1000 1 2 3 4 5 100 200 300 170 182 230 280 335 b) input pcap file size [gb] to ta l ex ec u ti on ti m e [s ] m=low;sr=1000 200 400 600 800 1000 100 200 300 127 158 190 255 335 c) the number of snort rules to ta l ex ec u ti on ti m e [s ] f=5gb;m=low 5 9 13 17 200 400 600 800 807 461 343 335 d) the number of slave nodes to ta l ex ec u ti on ti m e [s ] f=5gb;m=low fig. 10: evaluation of the tcq4 with variable parameters: a) variable number of malicious packets in pcap, b) variable input pcap file size, c) variable number of snort rules, d) variable size of the cluster. rather the consequence of snort rules database structure. the used myers algorithm has a stabile execution time which is not affected by the contents of neither text nor pattern [12]. the snort database is hierarchically organized, having rules categorized in levels from general to specific. for example, if the protocol is not http, the sql injection rules are not going to be examined. thus, for the low malicious pcap a lot of packets are simply skipped after ports and protocols check, and the myers search algorithm is not started for them. if the monitored traffic contains a lot of packets that fall into ”suspicious” category, one or more additional pattern searches are going to be performed, depending on the number of specific rules bound to matched general rule. this directly reflects the results from fig. 10a. let us note that ids process in general can be strongly affected with the choice of the pattern search algorithm, as well as with the specifics of 254 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 255 16 v.ciric et al. low medium high 100 200 300 170 182 202 a) malicious level of pcap to ta l ex ec u ti on ti m e [s ] f=1gb;sr=1000 1 2 3 4 5 100 200 300 170 182 230 280 335 b) input pcap file size [gb] to ta l ex ec u ti on ti m e [s ] m=low;sr=1000 200 400 600 800 1000 100 200 300 127 158 190 255 335 c) the number of snort rules to ta l ex ec u ti on ti m e [s ] f=5gb;m=low 5 9 13 17 200 400 600 800 807 461 343 335 d) the number of slave nodes to ta l ex ec u ti on ti m e [s ] f=5gb;m=low fig. 10: evaluation of the tcq4 with variable parameters: a) variable number of malicious packets in pcap, b) variable input pcap file size, c) variable number of snort rules, d) variable size of the cluster. rather the consequence of snort rules database structure. the used myers algorithm has a stabile execution time which is not affected by the contents of neither text nor pattern [12]. the snort database is hierarchically organized, having rules categorized in levels from general to specific. for example, if the protocol is not http, the sql injection rules are not going to be examined. thus, for the low malicious pcap a lot of packets are simply skipped after ports and protocols check, and the myers search algorithm is not started for them. if the monitored traffic contains a lot of packets that fall into ”suspicious” category, one or more additional pattern searches are going to be performed, depending on the number of specific rules bound to matched general rule. this directly reflects the results from fig. 10a. let us note that ids process in general can be strongly affected with the choice of the pattern search algorithm, as well as with the specifics of input splits design techniques for ids on hadoop cluster 17 topology and network organization, as well. if anomaly based approach is chosen instead of pattern search, the search performances can be significantly affected also. from fig. 10 b) it can be seen that the total execution time linearly depends on the size of the input files. the very slow growth in the beginning of fig. 10b between execution times for 1gb and 2gb inputs is explained by the fact that the cluster consists of 17 nodes, where each node can execute 2 map tasks on two separate cores in parallel, giving the maximum of 34 simultaneously executed map task on the cluster. a 1gb file is presented on hdfs with 16 blocks of 64mb, while a 2gb file is presented with 32 blocks. this means that all necessary tasks can be run at the same time for both 1gb and 2gb files. the rise in the execution time between these two is due to the increased number of rack local tasks for the larger file. for larger files, more than 34 map tasks are required for processing, which means that not all of them can be started immediately, and they need to wait for the previously started map tasks to finish execution. however, the dependency once the cluster boundary is reached linearly increases (fig. 10b). the total processing time depends linearly on the number of snort rules (fig. 10c), while it has an asymptotic decline depending on the number of nodes (fig. 10d). it can be noticed in fig. 10d that for 17 nodes the graph enters saturation and the processing speed remains slightly under 0.15 gb/sec. as the number of nodes in the cluster grows, each of them stores a smaller number of blocks on average. this leads to an increase in rack local tasks. copying of remote blocks during the execution is a limiting factor that leads to the saturation in this case. 6 conclusion in this paper the design and implementation of ids using apache hadoop is proposed. four different input data split techniques are proposed and analysed. the techniques are described in detail. the ids is implemented using myers pattern search algorithm as a core for signature-based packet analysis. we showed the suitability of hadoop environment for the implementation of network ids and discussed inherited problem from hadoop that relates to splitting sensitive data across cluster nodes. the system is evaluated on apache hadoop cluster with 17 slave nodes. the implementation and evaluation results are given and discussed in detail. we showed that processing speed can differ for more than 30% depending on chosen input split design strategy. additionally, we showed that malicious level of network traffic can 254 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 255254 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 255 18 v.ciric et al. slow down the processing time, in our case, for nearly 20%. the scalability of the system was also discussed. the proposed techniques deal with specific type of input data, i.e. network traffic packets, but they can be easily generalized to deal with any type of sensitive data which need a special attention before it can be split into pieces and scatter onto different nodes in distributed environment. acknowledgments this work was supported by the serbian ministry of education, science and technological development [grant number tr32012]. references [1] l. a. maglaras, k.-h. kim, h. janicke, m. a. ferrag, s. rallis, p. fragkou, a. maglaras, and t. j. cruz, “cyber security of critical infrastructures,” ict express, vol. 4, no. 1, pp. 42–45, 2018. [2] m. a. ferrag, l. maglaras, s. moschoyiannis, and h. janicke, “deep learning for cyber security intrusion detection: approaches, datasets, and comparative study,” journal of information security and applications, vol. 50, pp. 1–19, 2020. [3] j. svoboda, i. ghafir, v. prenosil et al., “network monitoring approaches: an overview,” int j adv comput netw secur, vol. 5, no. 2, pp. 88–93, 2015. [4] i. ghafir, v. prenosil, j. svoboda, and m. hammoudeh, “a survey on network security monitoring systems,” in 2016 ieee 4th international conference on future internet of things and cloud workshops (ficloudw). ieee, 2016, pp. 77–82. [5] b. schneier, “managed security monitoring: network security for the 21st century,” computers & security, vol. 20, no. 6, pp. 491–503, 2001. [6] g. kumar, k. kumar, and m. sachdeva, “the use of artificial intelligence based techniques for intrusion detection: a review,” artificial intelligence review, vol. 34, no. 4, pp. 369–387, 2010. [7] m. aldwairi and d. alansari, “exscind: fast pattern matching for intrusion detection using exclusion and inclusion filters,” in 2011 7th international conference on next generation web services practices. ieee, 2011, pp. 24–30. [8] d. xu, h. zhang, and y. fan, “the gpu-based high-performance patternmatching algorithm for intrusion detection,” journal of computational information systems, pp. 3791–3800, 2013. 256 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 257256 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 257 18 v.ciric et al. slow down the processing time, in our case, for nearly 20%. the scalability of the system was also discussed. the proposed techniques deal with specific type of input data, i.e. network traffic packets, but they can be easily generalized to deal with any type of sensitive data which need a special attention before it can be split into pieces and scatter onto different nodes in distributed environment. acknowledgments this work was supported by the serbian ministry of education, science and technological development [grant number tr32012]. references [1] l. a. maglaras, k.-h. kim, h. janicke, m. a. ferrag, s. rallis, p. fragkou, a. maglaras, and t. j. cruz, “cyber security of critical infrastructures,” ict express, vol. 4, no. 1, pp. 42–45, 2018. [2] m. a. ferrag, l. maglaras, s. moschoyiannis, and h. janicke, “deep learning for cyber security intrusion detection: approaches, datasets, and comparative study,” journal of information security and applications, vol. 50, pp. 1–19, 2020. [3] j. svoboda, i. ghafir, v. prenosil et al., “network monitoring approaches: an overview,” int j adv comput netw secur, vol. 5, no. 2, pp. 88–93, 2015. [4] i. ghafir, v. prenosil, j. svoboda, and m. hammoudeh, “a survey on network security monitoring systems,” in 2016 ieee 4th international conference on future internet of things and cloud workshops (ficloudw). ieee, 2016, pp. 77–82. [5] b. schneier, “managed security monitoring: network security for the 21st century,” computers & security, vol. 20, no. 6, pp. 491–503, 2001. [6] g. kumar, k. kumar, and m. sachdeva, “the use of artificial intelligence based techniques for intrusion detection: a review,” artificial intelligence review, vol. 34, no. 4, pp. 369–387, 2010. [7] m. aldwairi and d. alansari, “exscind: fast pattern matching for intrusion detection using exclusion and inclusion filters,” in 2011 7th international conference on next generation web services practices. ieee, 2011, pp. 24–30. [8] d. xu, h. zhang, and y. fan, “the gpu-based high-performance patternmatching algorithm for intrusion detection,” journal of computational information systems, pp. 3791–3800, 2013. 256 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 257 18 v.ciric et al. slow down the processing time, in our case, for nearly 20%. the scalability of the system was also discussed. the proposed techniques deal with specific type of input data, i.e. network traffic packets, but they can be easily generalized to deal with any type of sensitive data which need a special attention before it can be split into pieces and scatter onto different nodes in distributed environment. acknowledgments this work was supported by the serbian ministry of education, science and technological development [grant number tr32012]. references [1] l. a. maglaras, k.-h. kim, h. janicke, m. a. ferrag, s. rallis, p. fragkou, a. maglaras, and t. j. cruz, “cyber security of critical infrastructures,” ict express, vol. 4, no. 1, pp. 42–45, 2018. [2] m. a. ferrag, l. maglaras, s. moschoyiannis, and h. janicke, “deep learning for cyber security intrusion detection: approaches, datasets, and comparative study,” journal of information security and applications, vol. 50, pp. 1–19, 2020. [3] j. svoboda, i. ghafir, v. prenosil et al., “network monitoring approaches: an overview,” int j adv comput netw secur, vol. 5, no. 2, pp. 88–93, 2015. [4] i. ghafir, v. prenosil, j. svoboda, and m. hammoudeh, “a survey on network security monitoring systems,” in 2016 ieee 4th international conference on future internet of things and cloud workshops (ficloudw). ieee, 2016, pp. 77–82. [5] b. schneier, “managed security monitoring: network security for the 21st century,” computers & security, vol. 20, no. 6, pp. 491–503, 2001. [6] g. kumar, k. kumar, and m. sachdeva, “the use of artificial intelligence based techniques for intrusion detection: a review,” artificial intelligence review, vol. 34, no. 4, pp. 369–387, 2010. [7] m. aldwairi and d. alansari, “exscind: fast pattern matching for intrusion detection using exclusion and inclusion filters,” in 2011 7th international conference on next generation web services practices. ieee, 2011, pp. 24–30. [8] d. xu, h. zhang, and y. fan, “the gpu-based high-performance patternmatching algorithm for intrusion detection,” journal of computational information systems, pp. 3791–3800, 2013. input splits design techniques for ids on hadoop cluster 19 [9] m. kharbutli, m. aldwairi, and a. mughrabi, “function and data parallelization of wu-manber pattern matching for intrusion detection systems.” netw. protoc. algorithms, vol. 4, no. 3, pp. 46–61, 2012. [10] x. su, z. ji, and x. lian, “a parallel ac algorithm based on spmd for intrusion detection system,” in proceedings of the 2nd international conference on computer science and electronics engineering. atlantis press, 2013. [11] m. aldwairi, a. m. abu-dalo, and m. jarrah, “pattern matching of signaturebased ids using myers algorithm under mapreduce framework,” eurasip journal on information security, vol. 2017, no. 1, pp. 1–11, 2017. [12] v. ciric, d. cvetkovic, and i. milentijevic, “design and implementation of network intrusion detection system on the apache hadoop platform,” in proceedings on 5th international conference on electrical, electronic, and computer engineering (icetran 2018), palic, serbia, 2018, pp. 1102–1105. [13] c. lam, hadoop in action. manning publications co., 2010. [14] m. y. eltabakh, y. tian, f. özcan, r. gemulla, a. krettek, and j. mcpherson, “cohadoop: flexible data placement and its exploitation in hadoop,” proceedings of the vldb endowment, vol. 4, no. 9, pp. 575–585, 2011. [15] a. sayar et al., “hadoop optimization for massive image processing: case study face detection,” international journal of computers communications & control, vol. 9, no. 6, pp. 664–671, 2014. [16] j. cheon and t.-y. choe, “distributed processing of snort alert log using hadoop,” international journal of engineering and technology, vol. 5, no. 3, pp. 2685–2690, 2013. [17] p. prathibha and e. dileesh, “design of a hybrid intrusion detection system using snort and hadoop,” international journal of computer applications, vol. 73, no. 10, 2013. [18] k. kato and v. klyuev, “development of a network intrusion detection system using apache hadoop and spark,” in 2017 ieee conference on dependable and secure computing. ieee, 2017, pp. 416–423. [19] c. f. endorf, e. schultz, and j. mellander, intrusion detection & prevention. mcgraw-hill osborne media, 2004. [20] h.-d. j. jeong, w. hyun, j. lim, and i. you, “anomaly teletraffic intrusion detection systems on hadoop-based platforms: a survey of some problems and solutions,” in 2012 15th international conference on network-based information systems. ieee, 2012, pp. 766–770. [21] a. khraisat, i. gondal, p. vamplew, and j. kamruzzaman, “survey of intrusion detection systems: techniques, datasets and challenges,” cybersecurity, vol. 2, no. 1, p. 20, 2019. [22] u. of washington, “cpu performance,” https://boinc.bakerlab.org/rosetta/cpu list.php, accessed: 2020-10-22. 256 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 257256 v. ćirić, d. cvetković, n. gavrilović, n. stojanović, i. milentijević input splits design techniques for ids on hadoop cluster 257 facta universitatis series: electronics and energetics vol. 33, no 2, june 2020, pp. 273-287 https://doi.org/10.2298/fuee2002273j © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd the peak windowing for papr reduction in software defined radio base stations * borisav jovanović, srđan milenković university of niš, the faculty of electronic engineering, niš, serbia abstract. the utilization of the techniques for peak to average power ratio (papr) reduction makes the wireless infrastructure conform to rigorous telecommunication standard specifications (error vector magnitude (evm), bit error rate (ber), transmit spectrum mask (tsm)). in modern modulation schemes reduction of papr is important requirement for distortion free and energy-efficient operation of power amplifiers (pa). in this paper novel implementation of peak windowing method for papr reduction in software defined radio (sdr) base stations (bs) is presented. the measurement results in terms of evm and acpr are given for 5 mhz, 10 mhz, 15 mhz, 20 mhz long-term evolution (lte) and wideband code division multiple access (wcdma) modulations. in case of 10mhz lte signal, we achieved papr = 8 db, evm = 2.0%, acpr -52dbc at modulated pa output, antenna point. key words: peak to average power ratio; peak windowing, software defined radio 1. introduction in radio frequency (rf) transceivers, power amplifiers (pa) consume the most power among the analog circuits; thereby its energy-efficiency is an important design requirement. pa nonlinearity causes high out-of-band radiation, inter-carrier interference and bit error rate (ber) performance degradation. the digital predistortion (dpd) is proven to be an effective method for pa linearization decreasing in-band and out-ofband distortions [2, 3]. dpd improves pa energy-efficiency and reduces the exploitation expenses of rf transceivers. peak-to-average power ratio (papr) of the signal s(n) is defined as the ratio of peak power and the average power of a signal: 2 2 max 10 )( log10 rms s ns paprdb  (1) received september 20, 2019; received in revised form december 11, 2019 corresponding author: borisav jovanović faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia e-mail: borisav.jovanovic@elfak.ni.ac.rs *an earlier version of this paper was presented at the 6th icetran conference, june 3 6, 2019, in silver lake, serbia, where the paper was awarded as the best paper in the electronics section [1]. 274 b. jovanović, s. milenković modern modulation schemes exhibit frequent occurrence of large signal peaks. in the presence high papr waveforms, pa cannot be efficiently linearized by dpd [4]. the solution which supports the dpd to compensate distortions is dealing with signals with reduced papr. in this case it is possible to increase transmitted signal average power, avoid pa operation in non-linear region and improve pa energy efficiency [5]. the utilization of papr reduction techniques in modern modulation schemes became an obligation. the flexibility to implement variety of modulation schemes is important feature of software defined radio (sdr) systems. because of this property, the sdr is our choice for the implementation of rf base station (bs). new implementation of papr reduction technique, operating in sdr based bs, is presented in the paper. in conjunction with dpd, it is promising solution to achieve good pa linearity and energy-efficiency. in the literature there are many studies in which the dpd and papr reduction methods are realized using expensive laboratory equipment and where modulated waveforms are produced using matlab software and vector signal generators (vsg). our papr reduction implementation is based on sdr board which is a part of bs. to assess the performance of papr reduction method we used following figures of merit: adjacent channel power ratio (acpr) and error vector magnitude (evm). telecommunication standards define minimum requirements in terms of acpr and evm for different modulation schemes [6]. this paper is organized as follows. related work is given in the following section. the section iii describes the technique for papr reduction and implementation in sdr hardware. measurement results of the papr method are presented in section iv. the results are obtained using following schemes: long-term evolution (lte) and wideband code division multiple access (wcdma). the section v is reserved for discussion. finally; conclusion is drawn in final section. 2. related work a number of methods have been proposed for papr reduction. they can be generally divided into two major groups: receiver-dependent methods and receiverindependent methods. in receiver-dependent methods, the papr is reduced by increasing complexity of the rf receiver [7]. in this case, the transmitter sends additional data which is decoded at receiver for reliable reconstruction of useful information. the disadvantage of receiver-dependent methods is reduction of data rate which is caused by transmission of additional data. examples of receiver-dependent methods are tone reservation [8], selective mapping [9] and partial transmit sequence [10] methods. the receiver-independent methods don’t transmit any additional data and don’t modify the structure of receiver. instead, the shape of the transmitted signals is modified by limiting the magnitude of large peaks [5, 11]. the disadvantage of their utilization is increase of in-band distortions and spectral regrowth. the receiver-independent techniques include clipping and filtering (caf) [12, 13], peak windowing (pw) [14], [15], peak cancellation (pc). the caf is the simplest method for papr reduction. since clipping operation is a nonlinear process it results in high in-band and out-of-band distortions. clipping operation the peak windowing for papr reduction in software defined radio base stations 275 is followed by low-pass filtering (lpf) operation which is employed to eliminate the spectrum regrowth. in pw large signal peaks are multiplied with a specific window function [11]. in an advanced pw proposed in [14], new weighting coefficients are obtained whenever successive peaks are found within a half of the window length. in [15], sequential asymmetric suppression (sas) pw method and optimally weighted windowing were proposed for papr reduction. the focus was to reduce unwanted attenuation of the signal caused by closely spaced peaks. in [16] a hybrid peak windowing (hpw) is proposed which minimizes the distortion by changing the papr reduction method. when a single peak is detected in the period of half of the window length, the peak is shortened using pw. when successive peaks are detected within the same period, the hpw eliminates the peaks using caf method. however, an experimental validation of pw method and its disadvantages induced by its application in sdr bs are not reported in the literature. 3. peak-to-average power ratio reduction 3.1. peak windowing method we have adopted pw algorithm for papr reduction because it can be easily implemented in sdr bs. besides, it provides flexibility to apply different modulation schemes. the operation of hard clipping is described by (2): )()()( nxncny  , (2) where signals x(n) and y(n) represent the input and clipped output signals respectively, each consisting of i and q signal components. the clipping operation is modeled by c(n):         thnx thnx nx th nc )(,1 )(, )()( (3) the clipping operation forces peaks in the signal envelope to stay below the threshold, denoted with th in (3). at the same time, clipping operation produces sharp edges in the y(n) reflecting in increased signal distortion. in pw method, sharp edges of clipped signal peaks are smoothened by multiplication of the original signal in the region of the peaks with a windowing function. to avoid sharp edges in y(n) and keep the signal envelope below th, the clipping function c(n) is replaced by b(n), given by (4). the kaiser, hamming or hann windowing functions can be used for realization of w(n) [17-18].     k k knwkcnb )())(1(1)( (4) the output signal y(n) is a convolution of the original signal x(n) and the applied windowing function. )()()( nxnbny  (5) 276 b. jovanović, s. milenković 3.2. peak windowing operations fig. 1 a) the peak windowing pwfir architecture b) the structure of peak search block the operation described by (4) is implemented by finite impulse response (fir) filter with symmetric impulse response, denoted with pwfir, which architecture is described in this section in detail. the implementation of pw consists of several stages. the pw preprocessing operations are depicted in the fig. 1a [19]. to determine envelope e(n) the i/q components xi(n) and xq(n) of the input signal are squared, summed and squarerooted. the envelope e(n) is then compared to threshold th. according to (3), if amplitude of e(n) is greater than th, clipping function c(n) is formed as the value of th, divided by e(n). otherwise, c(n) value is set to one. the peak search block is introduced in preprocessing stage to find local minimum values of the signal c(n). if a sample is not a local minimum, then the output signal of peak search block (signal cp(n)), is set to one. if a sample is recognized as local minimum, the value of this sample is passed to the output cp(n). peak search block examines the sequence of seven consecutive c(n) samples. the value of seven is chosen based on results of simulations in which the lte 10mhz and wcdma waveforms are used. the structure of peak search block is given in the fig. 1b. the operation of block comp is described by (6).       ba baa ny ,1 , )( (6) the peak windowing for papr reduction in software defined radio base stations 277 fig. 2 the top panel gives signals th, the envelopes of input and output signals; the bottom panel depicts signals c(n), cp(n) and b(n). the description of pwfir filter architecture is presented in the fig.1a [19]. the pwfir takes at input signal is 1cp(n) and generates 1b(n). negative values of 1cp(n) are substituted by zeros. the signal b(n) is used for gain correction of input samples xi(n) and xq(n). before these signals are multiplied with b(n), they are delayed for the period equal to the delay of pwfir filter. the difference between c(n) and b(n) is minimized by choosing narrow window lengths, revealing in decreased evm values. if clipping operation happens frequently, neighboring windows may overlap and the difference between c(n) and b(n) becomes larger [18]. to reduce windows overlapping the feedback structure is employed. the feedback structure adjusts the input values of cp(n) preventing that the signal is clipped more than it is really needed. the feedback structure reduces the evm in situations when successive peaks in cp(n) occur within the time interval which is less than half of a window length [19]. the signals, illustrating the pw method, are given in the fig. 2. top panel presents the envelope of input signal x(n), containing the peaks that are greater than the threshold level th, and the envelope of the resulting signal y(n),which is constrained to th. the bottom panel depicts the clipping functions c(n), modified clipping function cp(n) and the resulting gain correction signal b(n). as it can be seen from fig. 2, the amplitudes of local minimum of the signals c(n), cp(n) and b(n) are equal. also, the amplitude of output signal envelope is precisely limited to th. 3.3. hardware implementation of pw technique to implement preprocessing stage, the square, division and square-root circuits are designed. architecture description of these circuits can be found in [20]. arithmetic circuits are pipelined and operate at clock frequency which is equal to input and output signals data rate of 30.72 msps, which is the rate defined by 3g and 4g standards [6]. all arithmetic circuits are implemented in 18-bit fixed point precision which has not influence on papr reduction algorithm performance. 278 b. jovanović, s. milenković pwfir filter structure, which is depicted in the fig. 1a, can be divided into two parts, the filter pwfir1, producing output signal 1b(n), and the pwfir2 which generates the feedback signal f(n). for filter coefficient implementation we choose the hann windowing function. the coefficients are generated by following equation: 1 ( ) 1 cos(2 ) ,0 1, 2 1 k w k k n n            (7) where n is the window length. pwfir1 is designed as 40-tap fir filter. the value of n = 40 is determined by simulations [21]. for, example, in case of filter size equal to n = 40 and clipping threshold of th = 0.7, the out-of-band distortions, obtained at the output of pw block, are minimized down to system’s noise floor. the filter length n and coefficients are programmable. namely, the pwfir1 block has provision to change filter order in the range from 1 to the maximum equal to 40. besides, new filter coefficients can easily be loaded. the architecture of pwfir1 filter is based on multiply-and-accumulate (mac) circuitry and it is optimized for implementation in fpga. the number of utilized multipliers is reduced by multiplexing input data and operation at clock frequency which is four times larger than the sampling rate. the pwfir1 operates at the clock frequency of 122.88 mhz and input and output data rate is equal to 30.72 ms/s. the architecture is additionally optimized by the fact that filter has linear-phase and therefore, symmetrical coefficients around the center tap. the symmetry of filter coefficients enables additional reduction of the number of multiplication operations by factor of two. the arithmetic precision is 18-bit and it does not impact the pw performance. architecture utilizes the 18x18 bit embedded fpga dsp multipliers and provides up to 20 programmable coefficients. the number of coefficients is halved because of coefficients symmetry. as the result of architecture optimizations, the pwfir1 block occupies only 10 fpga dsp blocks which are needed for implementation of only five embedded 18x18 bit multipliers. the detailed architecture of pwfir1 is given in the fig. 3a. the pwfir1 coefficient value at index j is determined by (8) and (9). the coefficients have indexes in range from 0 to 19. whenever the relation (9) is met, the coefficient at index j is determined by (8). otherwise, coefficient is equal to zero.                       2 1 20)(1 n jwjhpwfir (8) 19 2 1 20         j n (9) in fig. 3a, signal clk is the clock signal, while enable signal xen determines input and output data rates. input signal is sampled at the positive edge of clk whenever xen = 1. filter coefficients hi and input samples di are stored in mem and dmem memory blocks respectively. the peak windowing for papr reduction in software defined radio base stations 279 fig. 3 architecture of a) pwfir1 and b) pwfir2 module both mem and dmem are addressed by 2-bit binary counter cnt. five mem blocks provide signals from h0 to h4; ten dmem blocks give signals d0 to d9. in each clock cycle, outputs mem and dmem are multiplied and the result is fed to the digital integrator:    4 0 9 *)( j jjj hddsum (10) delayed input enable signal ien is used to set the integrator feedback signal to zero whenever the calculation starts. after four clock cycles, output signal y calculates the filter output. output signal y is provided by latching the integrator output controlled by ien as well. at positive edge of clk when xen = 1, counter is reset and the process is repeated. the coefficients memory blocks are implemented as dual port register arrays. similarly, data memory is implemented as single port register array. multipliers are implemented by 1818 bit fpga dsp blocks. pwfir2 architecture is given in the fig. 3b. it provides up to 20 programmable filter coefficients which are stored in a register array and are indexed in the range from 0 to 19. the coefficients of pwfir2 are determined by (11) whenever condition in (12) is met. otherwise, coefficient at index j is equal to zero.               j n wjhfir 2 1 )(2 (11) 1 2 0        n j (12) 280 b. jovanović, s. milenković in fig. 3b five mem blocks provide signals from h0 to h4; also five dmem blocks give d0 to d4. in each clock cycle, outputs mem and dmem are multiplied and the following sum is calculated:    4 0j jj hdsum (13) 4. measurement results in this section, the results of the measurements are reported. [22] we utilized the sdr board which includes a transceiver ic covering the frequency range up to 3.8ghz [23] and additional on-board fpga ic in which the papr reduction circuits are implemented. test waveform can be uploaded and played from wfm ram block for the development or demo. in the real applications, wfm ram blocks are not required. cpu core performs functions of bb digital modem which are application specific, wcdma or lte [24] for example, and provides the input signal of papr reduction block. the papr reduction block output signal is filtered by symmetrical 40-tap low-pass fir filter. the utilization of fir filter is necessary because of two reasons. first, it compensates distortions generated by bb digital modem. else, the fir filter removes residual out-of-band distortions generated by papr reduction block. the filter length, which maximum is equal to 40, is programmable as well the filter coefficients. the fir provides up to 20 programmable coefficients which can be changed to support utilization of different modulation schemes. the fir architecture is identical to architecture of pwfir. the fir is optimized using the same optimization methods implemented in pwfir. the time multiplexing and symmetry of coefficients are exploited to reduce the number of fpga multipliers by factor of 8. the moderate output power pa with saturated power of 19dbm and supply voltage equal to 5v is used in the measurements. transmitted signal output power is set to pout = 6 dbm. the sdr board rf center frequency is set to 763 mhz. the results are reported by analyzing papr, acpr and evm of the pa output signal. in the measurements the pwfir filter order n is changed (n = 9, 19, 29 and 39). different clipping thresholds th are examined; the value of th is decreased from 1.0 down to 0.6 in steps of 0.04. for each combination of threshold th and filter order n, the papr, acpr and evm are measured by spectrum analyzer. in different test cases following waveforms are used: 5 mhz, 10 mhz, 15 mhz and 20 mhz lte test model 3.1 (e-tm 3.1) and wcdma. in particular, the e-tm 3.1 test specification applies to most lte modulation schemes at maximum power, and this specification is regarded as the most rigorous and one of the most important specifications of all evm test specifications [16]. 4.1. test case 1: 10mhz lte test model 3.1 waveform for e-tm 3.1 10mhz lte waveform, the cut-off frequency of fir filter is set to 10mhz. the measured papr vs. threshold graph is presented in fig. 4a. as it can be seen from fig. 4a, the papr vs. threshold curve exhibits almost linearity. the papr value of unmodified waveform signal is 10.2dbm. when threshold value is set to 0.7, the papr of the peak windowing for papr reduction in software defined radio base stations 281 output signal is reduced by 3db. the evm versus papr plot is given in the fig. 4b. the evm results are obtained at pa output after waveform is processed by papr reduction and low-pass fir filter blocks. when th = 1.0 is selected, the block for papr reduction is bypassed. in this case the evm is equal to 1.2%. as it is shown in fig. 4b, the evm is decreased with reduction of pwfir filter length n. for example, the combination of n = 9 and th = 0.6 yields to evm = 5.8%. in the case of n=39 and th = 0.6, evm = 7.7%. a) b) fig. 4 a) papr vs. th for 10mhz lte; b) evm for 10mhz lte as a function of n and papr. a) b) fig. 5 acpr for 10mhz lte as a function of papr when: a) fir filter is not used; b) fir is applied. the figs. 5a and 5b give the acpr values, obtained at pa output, as a function of papr and n. the measurements are performed for two cases: when low-pass fir filtering operation is bypassed and in the case when fir block is utilized. the figures clearly point the necessity of low-pass filtering. if the filtering is not performed, the acpr can only be improved when large n value is chosen, n=29 for example. if low-pass filter is used, the acpr results become insensitive to selection of n. in this case, when parameters th = 0.6 282 b. jovanović, s. milenković and n = 19 are chosen, out-of-band distortions are reduced to the systems noise floor and the acpr is equal to 52dbc. the utilization of low-pass fir not only reduces the out-ofband distortions at pw block output but also enables the usage of shorter pwfir window lengths, which gives better results in terms of evm. when papr is decreased to 8 db, the evm = 2% and acpr = 52dbc. similar results stand for in bs application, where the 10 mhz lte waveform is amplified using 10 w modulated output power pa with integrated dpd. the reduction of papr down to 8 db by proposed block gives the performance at pa output of evm = 2% and acpr = 52 dbc, obtained at 39.5 dbm modulated output power. 4.2. test case 2: 10 mhz lte when different window functions are used in the previous test case hann window function is applied. however, in the realization of coefficients w(n) different window functions can be used. we considered the other window functions that behave differently from hann function: the hamming and blackman-harris for example. we measured papr, acpr and evm values of the signal at pa output in the cases when hann, hamming, blackman-harris functions are separately applied. the results in terms of acpr and evm are given in fig. 6a and 6b respectively. in the measurements the fir filter is left bypassed. different window lengths are considered in the figures: n = 9, n = 19 and n = 39. a) b) fig. 6 a) acpr and b) evm as a function of papr and n when 10mhz lte waveform and different window functions are used: hann, hamming and blackman-harris 4.3. test case 3: 5 mhz lte test model 3.1 for 5 mhz lte waveform the cut-off frequency of low-pass fir filter is set to 5 mhz. in this test case the hann window function is applied. the evm versus papr plot is given in the fig. 7a. the fig. 7b depicts the acpr results, obtained at pa output, as a function of papr and n. these results presented in the fig. 7b are obtained in the case when low-pass fir filtering operation is bypassed. the peak windowing for papr reduction in software defined radio base stations 283 in the case when low-pass fir block is used and the papr is reduced by 2 db down to papr = 8.2 db, the amount of out-of-band distortions is reduced down to 55 dbc and evm = 2%. a) b) fig. 7 a) evm and b) acpr as a function of n and papr for 5 mhz lte 4.4. test case 4: 20 mhz lte test model 3.1 a) b) fig. 8 a) evm and b) acpr as a function of n and papr for 20 mhz lte. in the test case of 20 mhz lte the cut-off frequency of low-pass fir filter is set to 20 mhz. the results in terms of evm in acpr are given in figs. 8a and 8b respectively. the utilization of low-pass fir filter is necessary when n = 9. in other cases of n = 19, n = 29 and n = 39, the acpr is equal to 50.2 dbc. when papr is decreased by 2db, the evm = 5.36%. 4.5. test case 5: wdma test model 1 in case of wcdma test model 1 waveform, the coefficients for 5 mhz low-pass filter are loaded in the fir. besides, we have applied the hann function. the evm vs. papr plot is given in the fig. 9a. the papr value of unclipped wcdma signal is 284 b. jovanović, s. milenković 10.6 dbm. the evm is then 1.1%. when th is reduced to 0.7, the papr of output signal is reduced by 3db. increase of n yields in increase of evm. the fig. 9b depicts the acpr results obtained for wcdma input waveform when signal filtering is not used. when fir block is used the out-of-band distortions are reduced to the systems noise floor and acpr becomes equal to -55dbc. a) b) fig. 9 a) evm and b) acpr as a function of n and papr for wcdma 5. discussion a signal envelope containing high peaks is an unwanted characteristic of modern modulation schemes. this can be seen in the examples of wcdma and 10mhz lte waveforms. for the reduction of such high signal peaks we use the pw method. the original version of pw method, found in [11, 19], is modified by introducing novel peak search block. compared to the original pw implementation, after utilization of new peak search block, the absolute value of the difference between local minimum values of gain correction b(n) and the clipping signal c(n) is minimized. this difference is minimized invariantly to the clipped signal amplitude value. as the result of equalization of amplitudes of b(n) and c(n), the peaks in output signal envelope are more accurately constrained to the threshold th, resulting in lower evm values. the pwfir order does not affect the papr, but does affect acpr and evm. besides, the acpr and evm depend on the threshold level. we investigated the tradeoff between smaller papr and larger signal distortions. in our pw implementation, the low-pass fir is employed to reduce the out-of-band distortions. after processing with the low-pass fir, high-frequency signal components are eliminated and implemented block manifests improved acpr performance. as it can be seen from measured results, the out-of-band distortion is reduced down to system's noise floor. also, the utilization of low–pass fir enables selection of lower pwfir window lengths, which yields to lower evm, conforming strict telecommunication standards [6]. the novel architecture of pwfir is created to fulfill two main requirements: to be programmable and to save the fpga resources. the programmability enables changing of modulation scheme by adjustment of pwfir parameters. namely, the pwfir circuit the peak windowing for papr reduction in software defined radio base stations 285 has provision to change window filter length and filter coefficients. beside options of modifying the pwfir configuration, we have option to specify the clipping threshold. the pwfir architecture is dedicated for fpga implementation and it is optimized to save the fpga chip resources. the number of multipliers in pwfir is reduced eight times. time multiplexing reduces the number of multipliers by factor of four. the throughput of pwfir implementation is equal to sample rate of 30.72 msps, which is defined by 3g and 4g lte standards [6]. the circuits operate at clock frequency of 122.88 mhz; this frequency is determined by propagation delays of embedded fpga multiplier blocks. the pwfir architecture is additionally optimized by a factor of two exploiting the symmetry of pwfir filter coefficients. each of pwfir1 and pwfir2 filter occupy exactly 10 fpga dsp blocks, implementing only five 1818 bit multipliers. additional 10 bit multipliers are used for realization of low-pass fir filter block, which architecture is similar to the architecture of pwfir filters. the arithmetic precision of digital blocks implemented within fpga is 18-bit and it does not have influence on pw performance. the utilization of fpga resources is given in the table 1. table 1 the occupied altera cyclone v fpga resources digital block combinatorial alut dedicated logic registers dsp blocks papr reduction block 2168 3389 14 fir 1523 2168 10 the results in terms of acpr, evm and papr, obtained for different modulation schemes – 5 mhz, 10 mhz, 15 mhz, 20 mhz lte e-tm 3.1 and wcdma, are summarized in the table 2. in all measurements the papr of input signal is reduced by 2 db. as bandwidth of waveform is increased, the evm and acpr results become worsened. for example, for 20 mhz lte the acpr is equal to -50.2 dbc, compared to 55 dbc obtained for 5mhz lte signal. the evm of 20 mhz signal is equal to 5.36%. table 2 the measured acpr, evm and papr for 5mhz, 10mhz, 15mhz, 20 mhz and wcdma when papr of input waveform is reduced by 2db 5 mhz lte 10 mhz lte 15 mhz lte 20 mhz lte wcdma acpr[dbc] -55 -51.8 -51.3 -50.2 -55 evm[%] 1.9 1.9 2.93 5.36 1.4 papr[db] 8.2 8.2 8.2 8.4 8.6 in order to evaluate the performance of the proposed papr reduction, it is compared with the caf [12], original pw [14] and hpw [16] methods which are found in literature. the pwfir filter length n = 19 and the lte 10mhz e-tm 3.1 waveform are used. fig. 10 summarizes the performance comparison of proposed method and the existing methods. the proposed method outperforms the caf, original pw and hpw schemes in terms of the evm. besides, the measured evm is much below than evm = 8%, the value required by standards, even in the case when papr is reduced down to 6 db. 286 b. jovanović, s. milenković fig. 10 comparison of evm vs. papr plots of proposed method with references. the lte 10mhz e-tm 3.1 waveform is used different window functions are considered in the realization of pwfir filter. han and hamming functions produce similar results in evm and acpr. the blackman harris gives better results in evm but acpr is significantly worsened. in the papers which are used for comparison, waveforms are generated by laboratory equipment. after the waveforms are processed by matlab software, implementing the papr reduction, they are up-converted to rf by vsg. in all references the dac resolution is greater or equal than 14 bits. in our case the resolution of input waveforms, as well as the resolution of embedded dac, located in lms7002 transceiver ic, is equal to 12 bits. 6. conclusion the state-of-the-art modulation schemes exhibit large papr values, enhancing the non-linear effects of power amplifiers (pa) and increasing the running cost of rf base stations. this paper presents novel peak windowing papr reduction method dedicated for implementation in sdr based rf base stations. the pa is constrained to operate within its linear region using pw method which employs low-pass filtering for complete elimination of residual out-of-band distortion. besides, the novel peak search block is created in preprocessing stage of pw to precisely constrain the envelope of the output signal to selected threshold. in conjunction with feedback path in pw architecture, the peak search block reduces amount of in-band distortion. the advantage of implemented hardware is that it can be used in different modulation schemes. namely, to support various schemes, the pw module provides adjustment of different window lengths, threshold levels and loading of new filter coefficients. to demonstrate performance of papr reduction method the wcdma, 5mhz, 10mhz, 15mhz and 20mhz lte modulations are utilized. the papr, evm and acpr are obtained by spectrum analyzer at pa output, antenna point. we show that proposed method exhibits better performance in terms of in-band distortions than the receiver-independent methods found in literature. besides, novel papr reduction architecture reduces the number of embedded multipliers and it is therefore suitable for implementation in fpga ics. the peak windowing for papr reduction in software defined radio base stations 287 references [1] b. jovanović and s. milenković, "the implementation of peak windowing technique", in proceedings of the 6th icetran conference, srebrno jezero, 3-6 june 2019, eli 1.2. [2] c. eun and e. j. powers, "a new volterra predistorter based on the indirect learning architecture", ieee trans. signal process., vol. 45, no. 1, pp. 223–227, 1997. [3] j. k. cavers, "amplifier linearization using a digital predistorter with fast adaptation and low memory requirements", ieee trans. veh. technol., vol. 39, no. 4, pp. 374–382, 1990. [4] a. đorić, n. maleš-ilić and a. atanasković, "rf pa linearization by signals modified in baseband digital domain", facta universitatis, series electronics and energetics, vol. 30, no. 2, pp. 209–221, 2017. [5] d. w. lim, s. j. heo and j. s. no, "an overview of peak-to-average power ratio reduction schemes for ofdm signals", journal of communications and networks, vol. 11, no. 3, pp. 229–239, june, 2009 [6] evolved universal terrestrial radio access (e-utra); base station (bs) radio transmission and reception 2012, www.3gpp.org. [7] t. jiang and y. wu, "an overview: peak-to-average power ratio reduction techniques for ofdm signals", ieee trans. broadcasting, vol. 54, no. 2, pp. 257–268, june, 2008. [8] j . tellado, "peak to average power reduction for multicarrier modulation", ph.d. dissertation, stanford university, 2000. [9] r. w. bäuml, r. fisher and j. b. huber, "reducing the peak-to-average power ratio of multicarrier modulation by selected mapping", electronic letters, vol. 32, no. 22, pp. 2056–2057, 1996. [10] s. h. müller and j. b. huber, "ofdm with reduced peak-to-average power ratio by optimum combination of partial transmit sequences". electronic letters, vol. 33, no. 5, pp. 368–369, 1997. [11] h. mistry, "implementation of a peak windowing algorithm for crest factor reduction in wcdma", master of engineering thesis, simon fraser university, canada, 2006. [12] x. li and l. j. cimini, "effects of clipping and filtering on the performance of ofdm", ieee communication letters, vol. 2, no, 5, pp. 131–131, 1998. [13] t. lee and h. ochiai, "experimental analysis of clipping and filtering effects on ofdm systems", in proceedings of the 2010 ieee international conference on communications (icc 2010), south africa, ieee, 2010. [14] s. cha, m. park, s. lee, k. j. bang and d. hong, "a new papr reduction technique for ofdm systems using advanced peak windowing method", ieee trans. of consumer electronics, vol. 54, no. 2, pp. 405–410, 2008. [15] g. chen, r. ansaru and y. yao, "improved peak windowing for papr reduction in ofdm", in proceedings of the ieee 69th vtc spring conference, barcelona, spain: ieee, 2009, pp. 1–5. [16] d. kim and s. an, "experimental analysis of papr reduction technique using hybrid peak windowing in lte system", journal on wireless communications and networking, vol. 75, december 2015. [17] s. han and j. lee, "an overview of peak-to-average power ratio reduction techniques for multicarrier transmission", ieee trans. wireless communications, vol.12, no.2, april 2005, pp. 56– 65. [18] m. pauli and h. p. kuchenbecker, "minimization of the inter-modulation distortion of a nonlinearly amplified ofdm signal", journal of wireless personal communications, vol.4, no.1, pp. 90–101, january 1996. [19] o. vaananen et al., "effect of clipping in wideband cdma systems and simple algorithm for peak windowing", in proceedings of the of world wireless congress, san francisco, usa, may 28-31 2002, pp. 614–619. [20] b. jovanović, m. damnjanović and v. litovski, "square root on chip", etf journal of electrical engineering, ee department, university of montenegro, vol. 12, pp. 65–75, may 2004. [21] b. jovanović and s. milenković, "peak windowing for peak to average power reduction", in proceedings of the 7th small systems simulation symposium, nis, serbia, 2018, pp. 33–36. [22] limemicrosystems limesdr qpcie (2019), https://wiki.myriadrf.org/limesdr-qpcie. [23] limemicrosystems lms7002m (2019), https://limemicro.com/. [24] n. milosević, b. dimitrijević, d. drajić, z. nikolić and m. tosić, "lte and wifi co-existence in 5 ghz unlicensed band", facta universitatis, series electronics and energetics, vol.30, no.3, pp. 363– 373, 2017. instruction facta universitatis series: electronics and energetics vol. 29, no 1, march 2016, pp. 1 10 doi: 10.2298/fuee1601001l enhanced dynamic voltage clamping capability of clustered igbt at turn-off period  hong. y long, mark. r sweet, e. m. sankara narayanan department of electrical and electronic engineering, university of sheffield, uk abstract. one of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. in this paper, we present the dynamic voltage clamping capability of 3.3kv field stop clustered igbt devices under extreme inductive load condition. it shows that pmos trench gate cigbt structure with outstanding performance of fast turn-off time and low over-shoot voltage. further optimization of current gain of cigbt structure is analyzed through numerical evaluation. a step further in the safe operating area has been achieved for high voltage devices by cigbt technology. key words: insulated gate bipolar transistor (igbt), power semiconductor devices, clustered igbt 1. introduction similar to short circuit device failure, dynamic latch-up of high voltage igbts represents another practical failure mode during device turn-off under dynamic avalanche conditions. overshoot of anode voltage occurs during device turn-off, especially for parallel connected power modules is very critical for igbt operation and should be protected within the limited safe operating area (soa). manufacturers and circuit designers have been trying to suppress the peak voltage by reducing anode current turnoff di/dt or de-rating and the use of voltage clamping circuits, snubbers to achieve sustainable capability. however, these methods unavoidably increase the turn-off switching loss, cost and the complexity of the system. the self-voltage clamping characteristics of igbt have been reported in [1-4]. it must be capable of absorbing all the energy stored in the inductance during abnormal conditions [5]. it is important to develop igbt without destruction even under the condition of dynamic avalanche [6]. during turn-off, the abruptly reduction of gate voltage seizes the injection of electron from the n-channel. the anode current continues to flow due to the inductive load. it must be sustained by the hole current. the hole carriers flows across the and modifies the received june 08, 2015 corresponding author: e.m.sankara narayanan department of electrical and electronic engineering, university of sheffield, united kingdom (e-mail: s.madathil@sheffield.ac.uk) 2 h. y. long, m. r. sweet, e. m. s. narayanan effective carrier concentration in the n-drift region. the profile of electric field is determined by the poisson equation in e.g. (1) (1) wherein neff is the effective carrier concentration in the n-drift region. these extra carriers lead to an increase in neff. it can modify the profile of the electrical field and may force the device into a dynamic avalanche mode by the high peak electric field. this process is stable if the extra generated electrons and holes are balanced in numbers and will continue until all the remaining excess carriers are eliminated and subsequently, the dynamic avalanche mode is suddenly eliminated. otherwise, the process can get out of control by the avalanche-generated carriers and would lead to a device failure. due to the stray inductance in the circuit, the igbt anode voltage over-shoots and eventually the electric field could punch through the n-drift region. when the anode voltage reaches the dc bias voltage, the anode current begins to fall as the current is transferring to the diode in a rate depending on the stray inductance and peak anode voltage. the capability for the power devices to dissipate a large amount of power dissipated during the period could be improved by employing a high igbt internal pnp gain, β [1]. more hole carriers will balance the effective carriers in the n-drift region, but this approach would have increased turn-off loss and higher leakage current in the off-state. in this paper, we demonstrate the dynamic avalanche ruggedness of 3.3kv field-stop clustered igbt (cigbt) [7-10] with self-voltage clamping capability. the technology shows improved safe and efficient operation and will ease the design constrictions on the system level. 2. self-clamped inductive switching capability 2.1. device structure cigbt is a mos-bipolar device employing a controlled thyristor concept to significantly reduce on-state voltage drop. it has the unique capability to clamp the cathode cell potential by punch-through of an n-well region between the p-base and pwell, termed as “self-clamping”. the feature improves current saturation characteristics and enables better short circuit performance [11]. the single cell schematic structures of 3.3kv class, conventional, pmos trench gate cigbt and field-stop igbt structures are shown in fig. 1(a)-(c) respectively. the igbt structure model is optimized for comparable purpose [11]. as a result, all structures have the same cell dimensions. the pmos trench cigbt [12], fig. 1(b), is identical to that of the conventional cigbt, fig. 1(a), except that a pmos trench gate (width=1µm, depth=4µm) connects the p-base to gate. the pmos and nmos gates are connected together to form a three terminal device. the pmos channels are only conducted during the turn-off cycle when the gate voltage is negative and is used for hole current pass. a constant lifetime of 50µs is chosen for both electrons and holes and it is assumed that the edge termination does not have any impact upon device performance under this condition. the simulated cigbt structures have only one full cell considered although in reality each cluster can consist of 50 to 100 cathode cells. enhanced dynamic voltage clamping capability of clustered igbt at turn-off period 3 fig. 1 schematic structure diagram of (a) planar gate cigbt, (b) planar gate cigbt with deep pmos trench channel and (c) conventional planar gate igbt. 2.2. device turn-off performance the 3.3kv fs cigbt and igbt structures listed in fig. 1 are simulated to compare their capability to clamp voltage under such extreme condition. the circuit configuration for the inductive turn-off is shown in fig. 2. these devices are turned-off at vdc=2500v, ianode=150a and tj=25˚c. a large stray parasitic inductance of lc=2.4µh is also included in the circuit. it is important to point out that there is no gate resistor used in the circuit. because conventional technology normally requires large gate resistance to suppress the dynamic avalanche generation, but the turn-off loss increases in this case mainly due to the change of the reduction of dv/dt and longer turn-off time [13]. a further increase in turn-off losses and applying de-rating factor to power devices will cause a significant loss in soa capability. the reduction of rg in new technology will provide much lower power losses, shorter delay time during turning-off transient when compared to conventional technology. fig. 2 circuit setup of inductive load turn-off simulation. 4 h. y. long, m. r. sweet, e. m. s. narayanan fig. 3 igbt and cigbt turn-off waveforms (vdc=2500v, ia=150a, tj=25˚c, solid line: anode voltage; dashed line: anode current). fig. 3 shows the turn-off waveform of planar gate cigbt, pmos trench gate cigbt and conventional igbt. the maximum voltage peak across the igbt during the transient is about 400v higher than the other cigbt devices and associated with strong voltage oscillation. the planar gate cigbt has a slow dv/dt in comparison to igbt device. this is because cigbt has several times higher conductivity modulation of the n-drift region due to thyristor conduction [10] . it takes longer time to remove excess carriers from its ndrift region. on the other hand, the low dv/dt helps to maintain current and voltage levels within the soa, ease the high power stress across the device and less voltage peak and oscillation are found. pmos trench gate cigbt is the best performed device by displaying both fast turn-off time and low voltage peak in contrast to the other two structures. the current flow lines of planar gate igbt, planar gate cigbt and pmos trench gate cigbt at 200ns after the gate turn-off, when the mos channel of these devices has cutoff and enters dynamic avalanche in the n-drift region, are shown in fig. 4 (a)-(c), respectively. the cigbt devices behave differently to that of igbt due to its current is carried by a controlled thyristor. the holes within the p-well region flow through the depleted n-well at the saturated hole velocity and are collected at the cathode contact. it should be noted that the n-well is completely depleted when the anode voltage exceeds the self-clamping value of the n-well. avalanche-generated electron and hole carriers can also be found by the laterally displayed current flow lines. with pmos trench gate, it conducts during turn-off period when the gate voltage goes negative. it extracts the holes vertically by the trench gate channels and enhanced the capability of cigbt to remove charges underneath the cathode region. lower current density can thus be achieved. enhanced dynamic voltage clamping capability of clustered igbt at turn-off period 5 (a) (b) (c) fig. 4 current flow lines of (a) igbt, (b) cigbt, and (c) pmos trench gate cigbt structure at time=200ns. 6 h. y. long, m. r. sweet, e. m. s. narayanan after the turn-off of the gate voltage, the dc voltage is then supported within the structure by the formation of the depletion region. depending on the concentration of the excess carriers in the depletion region, the width of the depletion region expands with time allowing the device to support larger anode voltage. the electric field profiles in the n-drift region during turn-off period are plotted in fig 5. the electric field expands towards anode contact to support higher voltages and eventually punches through to the n-buffer region at their maximum clamped voltage. it should be noted that the different positions of electric field peaks at the cathode side are due to the forward blocking voltage is support by the p-base/n-drift junction for igbt whereas it is supported by the p-well/n-drift junction for cigbt devices. fig. 5 simulated electric fields distribution of structures after gate turn-off (solid line: time=200ns, dash line: time=400ns, and dotted line: time at maximum anode voltage). fig. 6 simulated effective carrier concentration of structures based on the results shown in fig. 5 (solid line: time=200ns, dotted line: time=400ns, and dash line: time at maximum anode voltage). enhanced dynamic voltage clamping capability of clustered igbt at turn-off period 7 the electric field of planar gate cigbt expands at a slower rate in comparison to the other two devices. this could be explained by the neff concentration across the structures as shown in fig 6. planar gate cigbt has a significant high portion of carriers are concentrated at the cathode side than the other two structures. in the process of time, neff is moving towards anode contact and becomes more evenly distributed across the whole region. it is important to notice that the with the help of pmos trench gate, the number of hole carriers at the cathode side has greatly reduced in comparisons to the conventional cigbt. this technology provides an efficient way to remove excess carriers. 3. optimization of current gain of fs-cigbt the self-clamping of the over-shoot voltage can be achieved by optimization of nbuffer layer in fs technology. this results larger soa required for high voltage devices. like short circuit condition, the self-clamped voltage is influenced by the internal pnp current gain, βpnp, which is a function of anode emitter efficiency, γanode, base transport factor, αt and also the effective n-buffer thickness, weff, as stated in the e.q.(2). ( ⁄ ) (2) where, lp is the hole diffusion length. it depends on the carrier mobility, lifetime and temperature. it thus requires optimum parameters of βpnp for the fs cigbt to enable the device to withstand over-shoot voltage successfully. the 3.3kv planar gate fs cigbt is simulated under the same circuit configuration in the section a to determine the influence of pnp current gain on the dynamic clamping performance of cigbt with different n-buffer thicknesses, and anode peak doping concentrations. fig. 7 shows the turn-off waveforms with n-buffer thicknesses varying from 5µm to 30µm with the same peak concentration of 5.0×10 15 cm -3 . it can be observed that the dv/dt of anode voltage after mos channel turn-off is greatly influenced by the n-buffer thickness. it also leads to reduction of over-shoot voltage as the n-buffer thickness reduces. but this sacrifices the current fall time during the transient. in comparison, the turning-off waveforms of the structure with varying anode peak concentration with a constant n-buffer thickness (15µm) and doping concentration (5.0×10 15 cm -3 ) are demonstrated in fig. 8. as expected from the increase in current gained by increasing peak anode doping concentration, a reduced self-clamped voltage is achieved at the expense of turn-off loss. fig. 9 has illustrated the peak power density during turning-off transient with a function of n-buffer thickness and anode peak doping concentration. the peak power density decreases with decreasing n-buffer thickness. the same trend can be found for igbt plotted in comparison. as a thinner buffer enhances the number of holes injected into the n-drift region during the transient, the peak power density reduced. but the reduction is less significant when the n-buffer thickness is less than 15µm. other constraints, such as stray inductance and carrier mobility, limit further improvement in the peak power density when there are sufficient holes to maintain a normal electric field distribution in the n-drift region. in the case of the igbt, its peak power density is higher for the same n-buffer thickness due to a higher electric field peak across the ndrift region than that exhibited by the cigbt as explained in the previous section. 8 h. y. long, m. r. sweet, e. m. s. narayanan fig. 7 cigbt turn-off waveforms with variable n-buffer thickness from 5µm to 30µm (vdc=2500v, ia=200a, tj=25˚c, rg=0ω). fig. 8 cigbt turn-off waveforms with variable anode peak concentration (vdc=2500v, ia=200a, tj=25˚c, rg=0ω). for a constant n-buffer thickness of 15µm, the peak power density of cigbt with increasing peak anode doping concentration is also plotted in the same figure. with a higher anode peak concentration, it also increases the pnp current gain. but the peak power density only shows a slight reduction when compared to the variation of n-buffer thickness. because as e.q. (2) suggested, n-buffer thickness causes βpnp change exponentially whereas γanode changes linearly with the current gain. a trade-off relationship between turn-off power loss and maximum self-clamped voltage is plotted in fig. 10 with n-buffer thicknesses from 5µm to 30µm. by controlling the n-buffer thickness, trade-off between voltage clamping capability and turn-off loss can be optimized. as can be concluded from the above results, the 3.3kv fs cigbt device exhibits good voltage clamping capability and turn-off loss. enhanced dynamic voltage clamping capability of clustered igbt at turn-off period 9 fig. 9 peak power density during turn-off. fig. 10 turn-off loss and clamped voltage dependence on the n-buffer thickness. 4. conclusion this paper has shown the dynamic voltage clamping capability of planar gate cigbt, pmos trench gate cigbt and conventional igbt under extreme stray inductance and zero gate resistance. the removal of excess charges stored in the n-drift region determines the turn-off time and maximum clamped voltage. pmos trench gate provides a more efficient method to extract the hole carriers by the induced p-channel when the gate voltage goes to negative value. it has exhibited low losses, fast turn-off time and smooth switching waveforms among the three types of structures simulated. 10 h. y. long, m. r. sweet, e. m. s. narayanan the self-voltage clamping feature of cigbt can be further improved through structural optimization of internal pnp current gain. a high current gain has better over-voltage protection, but would increase the turn-off power loss. a low current gain should also be avoided as it shifts the peak electrical field from cathode to anode side and induces oscillation during the process. the simulation analysis has shown that greater optimization of the performance of fs devices is achieved through the freedom provided by the n-buffer than by npt technology. there is a considerable impact on soa capability and power losses to fs cigbt. the new protection feature of fs cigbt can simplify the system design and offer greater optimization of performance of high voltage devices. references [1] m. rahimo, a. kopta, s. eicher, u. schlapbach, and s. linder, "a study of switching-self-clampingmode "sscm" as an over-voltage protection feature in high voltage igbts," in proceedings of the 17th international symposium on power semiconductor devices & ics, pp. 67-70, 2005. [2] a. rahimo, a. kopta, s. eicher, u. schlapbach, and s. linder, "switching-self-clamping-mode "sscm", a breakthrough in soa performance for high voltage igbts and diodes," ispsd '04, in proceedings of the 16th international symposium on power semiconductor devices & ics, pp. 437-440, 2004. [3] m. otsuki, y. onozawa, s. yoshiwatari, and y. seki, "1200v fs-igbt module with enhanced dynamic clamping capability," ispsd '04, in proceedings of the 16th international symposium on power semiconductor devices & ics, pp. 339-342, 2004. [4] j. yedinak, j. wojslawowicz, b. czeck, r. baran, d. reichl, d. lange, p. shenoy, and g. dolny, "enhanced igbt self clamped inductive switching (scis) capability through vertical doping profile and cell optimization," in proceedings of the 14th international symposium on power semiconductor devices & ics, pp. 289-292, 2000. [5] j. yedinak, j. merges, j. wojslawowicz, a. bhalla, d. burke, and g. dolny, "operation of an igbt in a self-clamped inductive switching circuit (scis) for automotive ignition," ispsd '98, in proceedings of the 10th international symposium on power semiconductor devices & ics, pp. 399-402, 1998. [6] j. lutz and r. baburske, "dynamic avalanche in bipolar power devices," microelectronics reliability, vol. 52, pp. 475-481, mar 2012. [7] e. m. s. narayanan, m. r. sweet, n. luther-king, k. vershinin, o. spulber, m. m. de souza, and j. v. s. c. bose, "a novel, clustered insulated gate bipolar transistor for high power applications," in proceedings of the international semiconductor conference, cas 2000, vols 1 and 2, pp. 173-181,542, 2000. [8] m. sweet, n. luther-king, s. t. kong, e. m. s. narayanan, j. bruce, and s. ray, "experimental demonstration of 3.3kv planar cigbt in npt technology," ispsd 08, in proceedings of the 20th international symposium on power semiconductor devices & ics, pp. 48-51, 2008. [9] k. vershinin, m. sweet, o. spulber, s. hardikar, n. luther-king, m. m. de souza, s. sverdloff, e. m. s. narayanan, and d. hinchley, "influence of the design parameters on the performance of 1.7kv, npt, planar clustered insulated gate bipolar transistor (cigbt)," ispsd '04, in proceedings of the 16th international symposium on power semiconductor devices & ics, pp. 269-272, 477, 2004. [10] n. luther-king, e. m. s. narayanan, l. coulbeck, a. crane, and r. dudley, "comparison of trench gate igbt and cigbt devices for increasing the power density from high power modules," ieee transactions on power electronics, vol. 25, pp. 583-591, mar 2010. [11] h. y. long, l. ngwendson, e. sankara narayanan, and m. sweet, "numerical evaluation of the shortcircuit performance of 3.3-kv cigbt in field-stop technology", ieee transactions on power electronics, vol. 27, pp. 2673-2679, 2012. [12] n. luther-king, m. sweet, and e. m. s. narayanan, "performance of a trench pmos gated, planar, 1.2 kv clustered insulated gate bipolar transistor in npt technology," in proceedings of the 21st international symposium on power semiconductor devices & ics, pp. 164-167, 2009. [13] t. ogura, h. ninomiya, k. sugiyama, and t. inoue, "turn-off switching analysis considering dynamic avalanche effect for low turn-off loss high-voltage igbts," ieee transactions on electron devices, vol. 51, pp. 629-635, apr 2004. instruction facta universitatis series: electronics and energetics vol. 27, no 2, june 2014, pp. 183 203 doi: 10.2298/fuee1402183j plasmonic enhancement of light trapping in photodetectors  zoran jakšić 1 , marko obradov 1 , slobodan vuković 1,2 , milivoj belić 2 1 center of microelectronic technologies, institute of chemistry, technology and metallurgy, university of belgrade, serbia 2 science program, texas a&m university at qatar, p.o. box 23874 doha, qatar abstract. we consider the possibility to use plasmonics to enhance light trapping in such semiconductor detectors as solar cells and infrared detectors for night vision. plasmonic structures can transform propagating electromagnetic waves into evanescent waves with the local density of states vastly increased within subwavelength volumes compared to the free space, thus surpassing the conventional methods for photon management. we show how one may utilize plasmonic nanoparticles both to squeeze the optical field into the active region and to increase the optical path by mie scattering, apply ordered plasmonic nanocomposites (subwavelength plasmonic crystals or plasmonic metamaterials), or design nanoantennas to maximize absorption within the detector. we show that many approaches used for solar cells can be also utilized in infrared range if different redshifting strategies are applied. key words: plasmonics, metamaterials, nanoantennas, solar cells, infrared detectors, light trapping 1. introduction an important requirement posed in photodetector design is to maximize the useful photon flux for a given physical thickness of active region of the device [1]. probably the most important type of such devices nowadays are solar cells [2-4]. they are basically photovoltaic detectors where an optical signal (radiation of the sun) is converted to voltage and thus to useful energy. since materials for solar cells are expensive, it is of interest to make their active region as thin as possible. another important class of the devices are infrared (ir) detectors [5] used in e.g. remote sensing, night vision, etc. since they are intended for larger wavelengths – typically they operate within the atmospheric windows at (3-5) m or (8-12) m – their thickness is usually relatively small compared to the operating wavelength.  received january 14, 2014 corresponding author: zoran jakšić center of microelectronic technologies, institute of chemistry, technology and metallurgy, university of belgrade, njegoševa 12, 11000 belgrade, serbia (e-mail: jaksa@nanosys.ihtm.bg.ac.rs) 184 z. jakšić, m. obradov, s. vuković, m. belić actually both the thickness of solar cells and night vision devices may be in subwavelength domain, i.e. smaller than the operating wavelength. a requirement posed to the designers in both situations is how to maximize optical trapping within such thin active regions. an important aspect of decreasing the thickness in the case of general semiconductor detectors is that it is followed by an increase of the response speed. thus the basic task in the design of such detectors is to maintain or even improve quantum efficiency in the operating wavelength range while decreasing the thickness as much as possible. the engineering methods dedicated to maximization of the available optical flux in photodetectors are termed the photon management or the light management [6]. several general strategies are available for this purpose [7], as shown in fig. 1. fig. 1 strategies for maximization of optical flux in photodetector first, one may perform external light concentration and collect optical energy from an incident area larger than the physical dimensions of the detector active region itself (photon collector). a typical example of this approach would be the use of concentrating lenses or reflectors that gather irradiation from the so-called optical area and focus it onto the electric area of the detector. non-imaging collectors can be used to that purpose [8-11]. after the signal has reached the active area of the detector, various antireflection coatings and structures can be used to decrease the reflected component of the incident radiation and to allow as large part of it as possible to enter the active region itself [12]. all of these structures basically match the impedance of the free space/detector environment to that of the detector material. once inside the detector, one can increase the optical path through the active region, which can be done by backside reflectors redirecting radiation back to the active region, or by various scattering structures at the front and at the back side of the device which change the path of the beam to make it longer and make use of total internal reflection to return the beam to the active region. it is also possible to utilize resonant structures (resonant cavity enhancement) [13], thus obtaining a narrow-bandwidth response, or to incorporate photodetector in a photonic crystal cavity [14, 15]. another important approach to detector enhancement after the beam has entered the active region is to perform internal optical concentration (spatial localization), i.e. to plasmonic enhancement of light trapping in photodetectors 185 fabricate structures that will perform squeezing of the optical space from a larger volume to a smaller one, thus increasing the local density of states of optical energy within the latter. the last two approaches, i.e. optical path increase and spatial localization belong to the light trapping schemes. the advent of nanostructuring technologies brought an impetus to this field. various building blocks with nanometer dimensions have been proposed for e.g. solar cell energy harvesting improvement, including nanoparticles, nanowires, different core-shell geometries, colloidal quantum dots, etc. [16, 17]. recently the use of plasmonics appeared as a novel approach to nanotechnological improvement of photodetector light trapping [18-23]. basically, plasmonics represents the use of coupled electron oscillations and surfacebound electromagnetic waves called surface plasmons polaritons (spp). this is achieved through utilization of metal-dielectric nanocomposites that can be designed to obtain almost any desired optical properties and thus almost complete control over electromagnetic propagation in and around such structures [24]. even the values of optical parameters not ordinarily met in nature can be obtained, like near-zero or even negative values of refractive index [25, 26]. such ability to engineer optical parameters at will brought to almost complete control over the propagation of electromagnetic waves and resulted in the appearance of transformation optics [27-29], where one optical space is transformed into another. one of the obvious application of plasmonics has been to “squeeze” the optical space to a much smaller volume than that of the free space. in this way high localizations of the electromagnetic field became possible, i.e. local densities of electromagnetic states much larger than those in the free space. in this paper we consider the use of plasmonics in light trapping in (ultra)thin photodetectors including solar cells and night vision detectors. after considering the fundamental limits to photon management in detectors from the point of view of subwavelength structures, we investigate the basic schemes for light trapping using plasmonics. we analyze the applicability of plasmonic nanoparticles both for field scattering and localization within the detector, the use of subwavelength plasmonic crystals and the possibility to redshift the device response utilizing the designer plasmons. we consider the utilization of dedicated optical antennas (nanoantennas) for detector enhancement. at the end we show how some of the schemes utilized for visible and near infrared radiation can be applied for night vision detectors through the application of different redshifting strategies. 2. fundamental limits to light management in detectors we consider a general case of a photodetector as a device that converts optical energy into another form of energy. most often this energy is electrical signal, although other forms may be used like thermal [30], motion (e.g. cantilever-based detectors) [31], optical signal at another frequency (upor down-converted) [32, 33] etc. basically, different light management approaches are intended to improve absorption of light in the detector and ensure a higher degree of this conversion. obviously, the efficiency of any conversion is limited by basic physical laws. a question is posed what are the fundamental limits of photodetector enhancement through light management. 186 z. jakšić, m. obradov, s. vuković, m. belić fig. 2 the structure of the active region of a detector with corrugated surface and ideal backside reflector a detector system is presented in fig. 2. a background optical flux is incident to the active area of a photodetector with a thickness d. both in the case of solar cells and night vision photodetectors the optical flux is blackbody radiation, described by the planck’s law. in a general case the detector material may incorporate nanostructuring that could localize optical field and create hotspots with high density of states. a perfect mirror is placed at the rear side of the device – i.e. it is assumed that the incident light is unidirectional, while the internal radiation is bidirectional. the detector surface is corrugated in order to increase the optical path through the detector. the corrugation may be random or ordered, but in both cases its basic purpose is to change the direction of light incident upon the active surface and to make use of total internal reflection to ensure repeated passing of the beams through the active region. light can escape if the direction of the internal beam falls within the escape cone, for which according to snell’s law sin cr = 1/n (cr is the critical angle of total reflection, n is the refractive index of the active region). we first consider the case limited by geometrical optics, which has been established by yablonovitch [34-37]. in literature it is variably denoted as the conventional limit, the ergodic light trapping limit, the ray-optics limit and the lambertian limit. it is assumed that the detector active material can be described by an effective absorption coefficient  isotropic throughout the device and that the detector thickness is much larger than the operating wavelength in free space (d >> /2n), so that one considers a bulk process. the absorbance within the photodetector for a single pass across the structure (absorption without enhancement) is ( ) 1 exp( ( ) ) )a d w d        , (1) i.e. the absorbance is equal to the optical thickness of a photodetector, which is defined as the d product. since a bulk case is considered, it is further assumed that interference/diffraction effects can be neglected and that the intensity of light within the detector medium is in equilibrium with external blackbody radiation. the density of states within the medium is proportional to n 2 . the next assumptions are that the equipartition theorem is valid (the plasmonic enhancement of light trapping in photodetectors 187 internal occupation of states is equal to the external one, the internal states are ergodic) and that the surface corrugation performs a full randomization of the incident signal over space. this is not always satisfied, but the assumption holds in a vast majority of cases. a sufficient condition for randomization of light by multiply scattering corrugated surfaces is that these surfaces upon averaging behave as lambertian. the internal distribution of the light within the medium is then isotropic. according to the statistical ray optics approach [34] the relation between internal and external intensity of light is )(),(2),( 2 int  extixnxi  . (2) the same result is also obtained according to the principle of detailed balancing of the light [38] applied between the light incident to a small surface element of the detector active area and escaping from that same element through the loss cone and by applying the brightness or radiance theorem (e. g. [39]) stating that the spectral radiance of light cannot be increased by passive optical devices (based on the principle of reversibility). to determine the enhancement of absorption, one has to consider the loss of light due to various mechanisms. according to yablonovitch [34, 35] there are three such mechanisms: the escape of light through the light cone, the losses due to imperfect reflection at the surfaces and the absorption in bulk. the absorbance of a photon is the ratio of the rate at which absorption occurs and the sum of the absorption and the photon loss through the escape cone. for the volume absorption in the limiting case when d << 1 and taking account the angle of the loss cone , this expression is dn a 2 2 4 sin )( )( )(       , (3) so that the absorption enhancement limit in the bulk case with internal randomization becomes 4n 2 . for = /2 this assumes the more often used simple form dn a 24 1 )( )( )(      . (4) the next case we consider are the devices with plasmonic localization for the enhancement of absorption. in this case many of the above assumptions introduced for ergodic limit are not valid. the crucial points are that the light distribution now is not isotropic (and actually the volumes with a strongly enhanced density of electromagnetic states may be deeply subwavelength) and the thickness of the detector is usually subwavelength. a number of treatises is dedicated to the situations in which the ray optics limit is exceeded and optical modes are confined at subwavelength scale [40-42]. however, until now no generally valid solution has been given for the extension of the ray optics limit [43]. 188 z. jakšić, m. obradov, s. vuković, m. belić 3. plasmonics for light trapping surface plasmons polaritons (spp) are oscillations of free electrons in conductive material near an interface with dielectric coherently coupled with electromagnetic radiation at the interface. the conductive material can be characterized by negative value of dielectric permittivity, while that in dielectric is positive. typically the conductive material is metal (most often used being gold and silver, although other metals are used like chromium, copper, various alloys, alkali metals, etc.), however other materials are used too, for instance transparent conductive oxides like indium tin oxide, zinc oxide, tin oxide, etc. (in near infrared), different semiconductors like silicon carbide, gallium arsenide (mid infrared), intermetallics, graphene and some other materials, all being denoted as plasmonic materials [44-46]. the spp is related with electromagnetic waves that are confined to the interface between positive and negative permittivity materials and are evanescent in perpendicular direction, i.e. they exponentially decay away from the interface. spps can be propagating along the interface, or they can be nonpropagating, i.e. spatially confined to e.g. a metal nanoparticle (localized surface plasmons polaritons). generally, the rapidly expanding field of research and application of spp-based phenomena is denoted as plasmonics [24, 47-49]. the field of plasmonics is dedicated to the use of spps in a similar way electrons are used in electronics. this is achieved via engineering of nano-composites that combine materials with positive and with negative values of dielectric permittivity in a certain frequency range. plasmonic nanocomposites can be one-dimensional (1d) like planar metal-dielectric superlattices, two-dimensional (2d) like cylindrical metallic nanowires, or three-dimensional (3d) like spherical metallic nanoparticles embedded in dielectrics. these structures can be periodic, quasiperiodic [50], aperiodic [51] or fully random [52]. the building blocks of these functions themselves may have different shapes, from simple to complex and from regular to irregular [53]. even in their simplest version, spps at the plane boundary between two semi-infinite media with opposite signs of dielectric permittivity are inhomogeneous electromagnetic waves (i.e. not plane waves) that propagate along the interface, and whose energy is concentrated in the narrow region near the boundary plane. this is possible only in a frequency range where the absolute value of the negative dielectric permittivity on one side is greater than the positive value on the other side of the interface. spps are strongly tm (transverse-magnetic) polarized, and because of that they are called polaritons. in other words, magnetic field and wavevector of the spp lay in the plane of interface, while electric field of the wave has both perpendicular and parallel to the wavevector components. therefore, spps are neither longitudinal nor transversal waves. it should be noted that te polarized component of electromagnetic field cannot satisfy the maxwell equations with standard boundary conditions, in the form of surface wave. plasmonic nanocomposites with two or more metal-dielectric interfaces within distances less than, or comparable to the plasmonic material skin depth (~25 nm for au or ag) produce strong coupling of neighbouring spps, and highly pronounced nonlocal effects. a plethora of new modes and possible novel effects may appear in such structures [54, 55]. sophisticated theoretical and numerical methods are necessary in order to achieve desired nanocomposite design levels. plasmonic enhancement of light trapping in photodetectors 189 an important disadvantage of spps is their resonant nature, which causes a narrow bandwidth of operation. another one is their large wave damping due to collisions of free carriers in the epsilon-negative material, which leads to shorter spps lifetimes and/or propagation lengths and high absorption of incident radiation. the relative dielectric permittivity of plasmonic materials is negative below plasma frequency, and its dispersion is well-described by electron resonance model of drude [56], also denoted as drude-sommerfeld model )( 2    i p    , (5) where p is the plasma frequency,  denotes damping factor describing losses (i.e. defines the imaginary part of the complex dielectric permittivity), while  is the asymptotic relative dielectric permittivity. the plasma frequency is determined by the properties of free carriers as 2 2 * 0 e p n e m    , (6) where ne is electron concentration, e is the free electron charge (1.6·10 –19 c), 0 is the free space (vacuum) permittivity (8.854·10 –12 f/m), and m * is the electron effective mass. the damping factor can be calculated from the material scattering data as *m e   (7) where  is mobility of free carriers. if interband transitions from the valence to the conduction bands exist, dielectric permittivity is described by the lorentz model [57]    ')( ' 22 0 2    i p , (8) where  is the resonant frequency of electron oscillator, while the apostrophe in plasma frequency ’p and damping factor ’ denotes that these values are related with the concentration of bound electrons taking part in the interband transitions. since one is able to tailor a plasmonic nanostructure, this means that dispersion relations could be designed within it, even enabling the optical behavior that surpasses that of natural materials. the structures thus obtained are known as plasmonic metamaterials [25]. in that case one can obtain modes with superluminal group velocities (“fast light”), near-zero (“slow light”) or even negative (“left-handed light,” propagating in the direction opposite to that of the phase velocity) [58]. the possibility to obtain an arbitrary frequency dispersion gives a possibility to convert propagating far field modes into spatially localized near-field modes, thus obtaining strongly increased density of states. the same energy is compacted into a much smaller space, thus ensuring much higher energy densities. this ensures highly enhanced interaction of optical radiation with photodetector material. this kind of engineering of optical absorption ensures its maximization in the 190 z. jakšić, m. obradov, s. vuković, m. belić active area, leading to vastly increased photodetector response and sensitivity compared to other light trapping schemes. a drawback of the use of plasmonics in photodetection are large absorption losses in metal, which result in a large part of energy being converted to heat instead of the useful signal. this topic is a field of active investigation, and various schemes are used to avoid it [59]. one of the approaches is the use of alternative plasmonic materials, like for instance transparent conductive oxides like tin oxide, indium tin oxide or zinc oxide [60] which are routinely used in solar cells because of their transparency at visible wavelengths. another such material for solar cell enhancement is graphene [45]. the applicability of plasmonics for photodetector enhancement has been recognized very early, in the period 1970-1980-ties, and actually some of the first proposed applications of surface plasmons polaritons were in photodetection [61, 62]. a large body of papers has been published on various methods of plasmonic enhancement in solar cells [19, 59]. surface plasmon polariton-mediated light trapping schemes may be roughly divided into the following groups according to the particular mechanism used (and bearing in mind that a single trapping scheme may include more than one of these):  enhanced mie scattering on plasmonic nanoparticles or nanovoids through plasmonic enlargement of effective cross-section [63].  coupling into guided modes (which may be propagating or spp modes) [19]  field localization and generation of hotspots near the surface of plasmonic material (using embedded nanoparticles, nanoantennas, metamaterials) [20]  use of plasmon-based singular optics (optical vortices, i.e. circular flow of field in a corkscrew fashion around phase singularities in the optical near field around plasmonic nanostructures) [59]  use of metamaterial-based transformation optics to map the optical space into a desired shape and with an increased density of states (optical superconcentrators and superabsorbers, optical black holes) [64]  plasmon-enhanced up-conversion media (reverse of luminescent materials used for down-conversion) [65] the plasmonic structures to be used for one or more of the above purposes include the following:  nanoparticles and nanovoids – used as scatterers and as nanoantennas for field coupling and localization. may be arranged in an ordered fashion (pattern) or disordered)  diffractive structures (gratings, lattices) – used for field coupling into guided modes; may be ordered or disordered.  subwavelength plasmonic crystals (spc) – used for field coupling and localization. may be periodic [66] or quasiperiodic [67] in 1d, 2d or 3d. plasmonic structures may be used as resonant enhancers, in which case they offer a narrow-bandwidth operation, or may be nonresonant, with a wide-bandwidth operation [68]. 4. plasmonic nanoparticles as mie scatterers the scattering cross-section of a plasmonic nanoparticle is greatly enhanced due to plasma resonance compared to non-plasmonic ones. the effective cross-section may be plasmonic enhancement of light trapping in photodetectors 191 an order of magnitude larger than the geometrical cross-section. thus a 10% surface coverage would suffice for practically 100% efficiency of conversion from incident propagating modes into surface plasmons polaritons. plasmonic nanoparticles (field concentrators) active region substrate fig. 3 light trapping utilizing plasmonic nanoparticles stochastically placed on the detector surface substrate buffer active layer ar/dielectric b) a) plasmonic nanoparticless c) d) fig. 4 geometries for plasmonic scatterers for light trapping within photodetector. a) nanoparticles embedded in top dielectric; b) nanoparticles on top of the active region; nanoparticles embedded within the active region; d) nanoparticles on the back side usually the conventional mie theory is utilized for the calculation of effective crosssections for absorption and scattering on nanoparticles [69]. mie theory is valid for noninteracting nanoparticles (i.e. those where the interparticle distance is large enough to prevent their electromagnetic coupling). in nanoparticles interacting through near-field coupling or far-field dipole interactions various additional phenomena appear like splitting of plasmon resonances and their shifting. 192 z. jakšić, m. obradov, s. vuković, m. belić the simplest case is scattering on a spherical plasmonic nanoparticle that can be considered as an electric dipole. its scattering cross-section at a wavelength  can be calculated as [70, 71] 4 2 3 8            scatc , (9) where                   213 d np d np v      . (10) here np is the complex and wavelength-dispersive relative dielectric permittivity of the plasmonic nanoparticles, d is the permittivity of the surrounding dielectric medium and v is the geometrical volume of the nanoparticle. the plasmon resonance and the maximum scattering cross-section are achieved at np = –2 d. the absorption cross-section is determined as 2 im( )absc     . (11) elongated ellipse may be taken as a generalization of the case of sphere and corresponds to a single wire nanorod antenna. this structure is actually the basic building block, out of which more complex forms are built. again the mie theory is applicable to this case, in a somewhat modified form. the dipole moment induced by an external field in an elongated ellipsoid is 0 (1 ) e j e j v p p           , (12) and its resonant frequency r rp res 2    , (13) where r is short radius of the ellipsoid, and r/2 its longer radius. in the most general case, the shapes of the nanoparticles widely vary and may assume different complex forms (e.g. various convex and concave polyhedra, including stellated and other forms [72]. this reflects strongly in their plasmonic response [19], since in principle sharper forms will cause larger field localizations. mie theory has been generalized to some of the more complex forms, but in the most general case the response is calculated numerically. 5. diffractive plasmonic couplers an obvious approach to light trapping using plasmonics is to integrate the detector structure with a diffractive plasmonic structure (diffractive optical element, doe) [73] and generally with a corrugated metal layer to act as a coupler with propagating modes. the simplest doe is the conventional diffractive grating. a parameter of a general diffractive optical element (doe) that determines the degree of coupling with propagating modes is its diffraction efficiency. the diffraction efficiency is dependent on geometrical and material parameters of the plasmonic doe, i.e. the complex plasmonic enhancement of light trapping in photodetectors 193 refractive index of the plasmonic material (for instance, transparent conductive oxides will generally have lower losses and longer resonant wavelengths than metals), the dimensions of the doe features (in the case of plasmonic diffractive gratings the parameters of influence will be the lattice constant (the grating element spacing), the shape and height of the grating ridges. thus its value can be tailored and optimized by a proper choice of the quoted parameters. the guided modes into which propagating modes are coupled by a doe can be propagating optical modes (the conventional waveguide modes) and surface plasmon polariton modes. in an ideal case for a photodetector, all propagating modes will be converted to plasmonic ones. figure 5 shows two different geometries for incorporation of doe into thin photodetectors: a) back-side doe, b) top-side doe. the configuration shown in fig. 5a is more common of the two [74]. however, the second one (fig. 5b can perform an additional function as light collector. a) diffractive patern b) ar/dielectric active layer buffer substrate fig. 5 two geometries for incorporation of plasmonic doe into a photodetector. a) bottom doe, b) top doe depending on the structure of the doe coupler, the propagation lengths of the spp modes may be shorter or longer [75]. besides its function as a light trapping structure, a doe can also serve as a light collector by its virtue of functioning as a non-imaging light concentrator [76]. in addition to that, a doe may perform impedance matching between free space and photodetector material, thus behaving basically as a diffractive antireflection structure. for instance, 1d metallic gratings (i.e. metal surface with an array of parallel slits) have been proved to act as such impedance-matching structures [77]. this means that such grating exhibit wideband extraordinary transmission. since this is a non-resonant phenomenon, it ensures a wide bandwidth and a broad range of incident angles. the diffractive structure may have a form of conventional diffractive grating with parallel ridges of metal, or may be more complex (e.g. a lattice/fishnet, etc.) in a most general case it will have a form of a holographic optical element with fully tailorable properties that can be computer generated [78]. plasmonic doe may function in narrow-bandwidth mode near resonance, but also as non-resonant elements with wide bandwidth. a built-in plasmonic doe in photodetector may simultaneously perform its function as a coupler and an electromagnetic field concentrator, but it may be also built to perform as a plasmonic waveguide [79, 80]. 6. subwavelength plasmonic crystals and designer plasmons further generalization of diffractive plasmonic structures is that to subwavelength plasmonic crystals (spc) [81]. a spc may be defined as a 1d, 2d or 3d plasmonic 194 z. jakšić, m. obradov, s. vuković, m. belić structure with its period much smaller than the operating wavelength (a rule of thumb is that the periodicity is at least ten times smaller than the operating wavelength). thus the details of the structure are not “seen” by the incident light and it behaves as an effective medium with its optical parameters dependent on its design, thus ensuring engineering of frequency dispersion of such materials. the number different possible kinds of spc is virtually limitless. plasmonic metamaterials may be regarded a special class of the spc and are defined as the structures possessing electromagnetic properties that are not readily found in nature [25], the most often researched among such properties being the possibility to reach negative values of effective refractive index [82]. the spc structures ensure light localization and can be therefore straightforwardly utilized to enhance optical absorption in photodetectors. in addition to that, owing to a large number of possible modes in such structures [boba], it is possible to utilize them at the same time to match the impedance between the free space and the photodetector, effectively behaving as an antireflective diffraction structure. as an example of spc for the enhancement of solar cells, fan et al [83] fabricated an ordered 2d array or metal cubes (or rather cuboids) on semiconductor surface to improve light trapping. among spc structures within the context of photodetection, one of the more frequently encountered ones are 2d arrays of nanoapertures in opaque metal films. such structures first drew attention for their ability to transmit light in spite of the dimensions of nanoapertues being much smaller than the operating wavelength and were denoted as extraordinary optical transmission (eot) arrays [84]. this behavior is a consequence of resonant excitation of spp at their surface that forces the passage of electromagnetic waves incident to the whole surface through the apertures. since such behavior effectively corresponds to impedance matching between propagating waves and the perforated metal film, the eot arrays thus act as efficient antireflective structures. however, there is another useful application of the eot arrays in photodetection (and generally structured metal-dielectric surfaces) and it is based on the properties of the surface waves that propagate along them. detector active region plasmon enhancement fig. 6 metallodielectric eot structure introducing “designer” plasmons with structurally tunable plasma frequency pendry et al [85] have shown that for a surface wave that propagates along a perforated metal film one is able to introduce an effective permittivity with a form plasmonic enhancement of light trapping in photodetectors 195          holehole hole planein a c a d    22 22 2 22 1 8 (14) where hole is the permittivity of the material within the holes, a is the hole side length (in the case of square holes, as shown in fig. 6) , and k0 is the wavevector in vacuum. the effective plasma frequency of such material is holehole p a c     (15) in other words, the effective dielectric permittivity of an eot array has the form identical to that of plasmonic materials. such surface waves that mimic spp were denoted by pendry the designer plasmons, and are also known as “spoof” plasmons. their main advantage is that one is able to tune the effective plasma frequency by a proper choice of geometry and material parameters and thus to shift it at will. an obvious application of this approach was for infrared detectors and structures tuned to the range of 8-10 m have been reported [86]. a paragidm that appeared in the wake of metamaterials is the transformation optics [2729, 87], the use of conformal mapping to transform one optical space into another, thus ensuring bending of light at will and tailoring of the density of states within a given volume. in a general state this is ensured through the use of gradient index metamaterials [88, 89]. probably the best known example of transformation optics are the so-called cloaking devices [29, 90], but from the point of view of photodetection much more interesting concepts are met in superfocusing and superconcentrators [91], superabsorbers [92, 93] including optical black holes [94], superscatterers [95], etc . in their 2011 paper aubry et al [64] proposed the use of transformation optics to ensure broadband light harvesting. 7. nanoantennas for photodetection enhancement nanoantenna or optical antenna [68, 96-98] is a plasmonic structure redirecting propagating waves into evanescent field (and vice versa), where propagating and spatially localized modes are linked in a highly efficient manner. the amount of localization itself can be tailored by the proper design of the nanoantenna and can be deeply subwavelength. thus interaction with photodetector active region can be vastly enhanced. nanoantennas are isolated structures, i.e. they are not connected to a feeding circuitry like the conventional antennas. with this in mind, a simple spherical nanoparticle may be regarded as the most basic nanoantenna. its scattering properties are shortly presented in section 4 of this paper. various types of nanoantennas were experimentally produced and presented in literature. fig. 7 shows some of the basic geometries, including the most basic type, the nanosphere. if two such spheres are brought together, they form a nanodimer with a coupling gap with a subwavelength width between them (denoted as the feed gap). a field hotspot appears in the feed gap, where localization is deeply subwavelength and field enhancement is very strong. in this manner larger field localizations are obtained than those using single structures. 196 z. jakšić, m. obradov, s. vuković, m. belić another generalization is the introduction of elongated ellipsoid (also described in section 4) that can be within this context described as dipole nanorod antenna, which is one of the most basic nanoantenna geometries. if two nanorods acting as linear dipoles are aligned and brought together to a subwavelength distance, ensuring an end-to-end coupling, they form a two-wire nanoantenna [68]. this is another basic type of optical antenna. it can be further generalized by introducing two additional dipoles perpendicularly to the first ones, all foud having a joint feed gap (the cross-antenna). nanoparticles can be ordered in an array (nanoparticle chain) to form an optical antenna [99] effectively behaving as linear nanorod antenna. another prototypical structure is the bowtie nanoantenna [100], consisting of two triangular shapes aligned along their axes and forming the feed gap with their tips. such geometry ensures a broader bandwidth together with large field localizations in the feed gap. a diabolo-type nanoantenna has been proposed in [101]. an optical yagi-uda nanoantenna can be fabricated by placing a resonant nanorod antenna between a reflector nanorod and a group of director nanorods [102]. similar to such antennas used in radiofrequent domain, a good directivity is obtained. more exotic shapes include spiral nanoantennas [103] and those with fractal geometries [104]. a plethora of other shapes can be used. different geometries include e.g. the use of split rings, various crescent shapes. an important group are nanoantennas making use of the babinet principle (a metal shape surrounded by dielectric and a dielectric-filled hole in metal with identical shape and size have identical diffraction patterns). thus bow-tie holes in metal substrates are used, two holes as a babinet equivalent of a nano-dimer, arrays of nanoholes, crossed arrays of nanoholes, etc. [105]. fig. 7 some different types of experimental plasmonic nanoantennas plasmonic enhancement of light trapping in photodetectors 197 the obvious way to use nanoantennas in photodetection is for coupling between propagating and localized modes and for field localization, especially through the use of hotspots within the feed gaps. a large number of works has been dedicated to the use of optical nanoantennas for photodetector enhancement [59, 68, 97, 106] the applicability of optical antennas for photodetection has been recognized very early [61]. today it is still one of the foci of interest in the application of optical antennas [59, 106]. one of the alternative approaches is to use a schottky metal-semiconductor junction where the optical antenna forms the metal mart of the metal-dielectric contact at the semiconductor detector surface [107]. photoexcitation generates hot electron-hole pairs by plasmon decay and the electrons are injected over the schottky barrier, thus directly generating photocurrent. a problem with this approach is a low efficiency when using hot electrons. 9. redshifting methods for nanoparticle-based plasmon-assisted infrared detection most of the approaches described in this paper are applicable in different part of the spectrum (subwavelength plasmon crystals/designer plasmon structures and optical antennas). however, the use of metal nanoparticles as mie scatterers is limited to frequencies near the surface plasmon resonance, which is for usual plasmonic materials (good metals) in ultraviolet or visible part of the spectrum. this makes them unsuitable for night vision devices and infrared detection. in this section we consider possible strategies to ensure the usability of plasmonic particles in the ir range [108]. the main point is that one needs to shift their resonance frequency toward longer wavelength, i.e. to perform a redshift of the characteristics. one obvious approach is to use materials with lower plasma frequency. it is known that plasma frequency of transparent conductive oxides is redshifted compared to metals and can be further shifted through proper doping and fabrication techniques [109-111]. another pathway toward redshifting is the immersion of plasmonic nanoparticles into high refractive index material [70], either by incorporating it into a dielectric film at the detector surface or utilizing core-shell particles with external dielectric layer. finally, one of the possible methods is the adjustment of interparticle spacing. fig. 8 shows the calculated scattering cross section for a spherical dipole indium tin oxide nanoparticle with a radius of 60 nm. the assumed doping concentration was 1.2·10 21 cm –3 which together with an effective mass of m* = 0.4 m0 furnishes a plasma frequency of 4.8·10 14 hz. the nanoparticle is placed at the top of the active surface of the detector and is embedded in dielectric, a layout similar to that shown in fig 4b. finite element method was utilized for simulation; no approximations were used. the plasmon resonance redshift described by maxima in scattering cross-section dispersion relations shown in figure 8 is caused by the increase in the embedding dielectric permittivity. figure 9 shows the radial distribution of the scattered electric field, presenting forward and back scattering. spreading of the forward scattering region with the increase of the permittivity of the dielectric layer is readily seen figure 9.a as well for larger operating wavelengths figure 9.b. finally, fig. 10 shows the electric field x-axis component (parallel to the incident light polarization) around the spherical nanoparticle at the surface of the detector for a permittivity of the embedding layer of 8. 198 z. jakšić, m. obradov, s. vuković, m. belić 2.0 2.5 3.0 3.5 4.0 10 15 20 25 30 35 40 s c a tt e ri n g c ro s s -s e c ti o n , x 1 0 – 1 4 m 2 wavelength, m diel = 8 diel = 10 diel = 12 spherical nanoparticle r = 60 nm substr=10 fig. 8 spectral dependence of scattering sscat cross-section for an embedded ito particle, r=60 nm, p=625 nm =12 =8 =10 2 m 1 m 2 m 2 m 3 m 4 m 4 m a) b) fig. 9 radial distribution of electric field around an ito nanoparticle obtained by finite element modeling; r=60 nm, p=625 nm. light is incident from top. a) scattering curves obtained for dielectric permittivity values 8, 10 and 12 for an operating wavelength of 3 m. b) scattering curves for operating wavelengths of 2, 3 and 4 m. permittivity of the dielectric layer is 12 plasmonic enhancement of light trapping in photodetectors 199 fig. 10 field enhancement around ito nanoparticle for infrared detector enhancement, calculated by fem simulation. light is incident from right. r=60 nm, p=625 nm,  =2.6 m, permittivity of the dielectric layer is 8 10. conclusion a broad overview is given of the currently available possibilities to use plasmonics for the enhancement of different classes of photodetectors, stressing solar cells and night vision devices. the consideration is based on the point of view of non-imaging photodetection devices (single detector elements) intended for detection of a broadband spectrum that can be represented as blackbody radiation. a classification of the approaches proposed until now is given, including some original results by the authors. the list of the available methods and approaches must be far from finished, since both plasmonics and solar cells fields of research are rapidly expanding, and new ideas and approaches appear almost every day. acknowledgement: the paper is a part of the research funded by the serbian ministry of education and science within the projects tr32008 and iii45016 and by the qatar national research fund within the project nprp 09-462-1-074. references [1] a. shah, p. torres, r. tscharner, n. wyrsch, and h. keppner, “photovoltaic technology: the case for thin-film solar cells,” science, vol. 285, no. 5428, pp. 692-698, 1999. [2] a. mcevoy, t. markvart, and l. castañer, solar cells, elsevier, amsterdam, 2013. [3] g. li, r. zhu, and y. yang, “polymer solar cells,” nat. photonics, vol. 6, no. 3, pp. 153-161, 2012. 200 z. jakšić, m. obradov, s. vuković, m. belić [4] s. j. fonash, solar cell device physics, elsevier amsterdam, 2010. [5] a. rogalski, infrared detectors, crc press, bocca raton, 2010. [6] r. b. wehrspohn, and j. ůpping, “3d photonic crystals for photon management in solar cells,” journal of optics, vol. 14, no. 2, 2012. [7] z. jakšić, and z. djurić, “cavity enhancement of auger-suppressed detectors: a way to backgroundlimited room-temperature operation in 3-14 μm range,” ieee j. sel. top. quant. electr., vol. 10, no. 4, pp. 771-776, 2004. [8] j. h. atwater, p. spinelli, e. kosten, j. parsons, c. van lare, j. van de groep, j. garcia de abajo, a. polman, and h. a. atwater, “microphotonic parabolic light directors fabricated by two-photon lithography,” appl. phys. lett., vol. 99, no. 15, 2011. [9] i. m. bassett, w. t. welford, and r. winston, "nonimaging optics for flux concentration," progress in optics 27, e. wolf, ed., pp. 161-226: elsevier, 1989. [10] w. t. welford, and r. winston, high collection nonimaging optics, academic press, 1989. [11] r. winston, j. c. minano, and p. g. benitez, nonimaging optics, academic press, 2005. [12] d. h. raguin, and g. m. morris, “antireflection structured surfaces for the infrared spectral region,” appl. opt., vol. 32, no. 7, pp. 1154-1167, 1993. [13] m. s. ünlü, and s. strite, “resonant cavity enhanced photonic devices,” j. appl. phys., vol. 78, no. 2, pp. 607-639, 1995. [14] b. temelkuran, e. ozbay, j. p. kavanaugh, g. tuttle, and k. m. ho, “resonant cavity enhanced detectors embedded in photonic crystals,” appl. phys. lett., vol. 72, no. 19, pp. 2376-2378, 1998. [15] z. djurić, z. jakšić, d. randjelović, t. danković, w. ehrfeld, and a. schmidt, “enhancement of radiative lifetime in semiconductors using photonic crystals,” infrared phys. technol., vol. 40, no. 1, pp. 25-32, 1999. [16] l. cao, p. fan, a. p. vasudev, j. s. white, z. yu, w. cai, j. a. schuller, s. fan, and m. l. brongersma, “semiconductor nanowire optical antenna solar absorbers,” nano lett., vol. 10, no. 2, pp. 439-445, 2010. [17] m. m. adachi, a. j. labelle, s. m. thon, x. lan, s. hoogland, and e. h. sargent, “broadband solar absorption enhancement via periodic nanostructuring of electrodes,” scientific reports, vol. 3, 2013. [18] w. l. barnes, a. dereux, and t. w. ebbesen, “surface plasmon subwavelength optics,” nature, vol. 424, no. 6950, pp. 824-830, 2003. [19] h. a. atwater, and a. polman, “plasmonics for improved photovoltaic devices,” nat. mater., vol. 9, no. 3, pp. 205-213, 2010. [20] j. a. schuller, e. s. barnard, w. cai, y. c. jun, j. s. white, and m. l. brongersma, “plasmonics for extreme light concentration and manipulation,” nat. mater., vol. 9, no. 3, pp. 193-204, 2010. [21] s. pillai, k. r. catchpole, t. trupke, and m. a. green, “surface plasmon enhanced silicon solar cells,” j. appl. phys., vol. 101, no. 9, 2007. [22] v. e. ferry, m. a. verschuuren, h. b. t. li, e. verhagen, r. j. walters, r. e. i. schropp, h. a. atwater, and a. polman, “light trapping in ultrathin plasmonic solar cells,” opt. express, vol. 18, no. 13, pp. a237-a245, 2010. [23] k. r. catchpole, and a. polman, “plasmonic solar cells,” opt. express, vol. 16, no. 26, pp. 2179321800, 2008. [24] s. a. maier, plasmonics: fundamentals and applications, springer science+business media, new york, ny, 2007. [25] w. cai, and v. shalaev, optical metamaterials: fundamentals and applications, springer, dordrecht , germany, 2009. [26] s. a. ramakrishna, and t. m. grzegorczyk, physics and applications of negative refractive index materials, spie press bellingham, wa & crc press, taylor & francis group, boca raton fl, 2009. [27] u. leonhardt, “optical conformal mapping,” science, vol. 312, no. 5781, pp. 1777-1780, 2006. [28] u. leonhardt, and t. g. philbin, "transformation optics and the geometry of light," progress in optics, e. wolf, ed., pp. 69-152, amsterdam, the netherlands: elsevier science & technology 2009. [29] j. b. pendry, d. schurig, and d. r. smith, “controlling electromagnetic fields,” science, vol. 312, no. 5781, pp. 1780-1782, 2006. [30] e. h. putley, "thermal detectors," optical and infrared detectors, r. j. keyes, ed., berlin: springerverlag, 1983. [31] p. g. datskos, n. v. lavrik, and s. rajic, “performance of uncooled microcantilever thermal detectors,” review of scientific instruments, vol. 75, no. 4, pp. 1134-1148, 2004. plasmonic enhancement of light trapping in photodetectors 201 [32] t. trupke, m. a. green, and p. würfel, “improving solar cell efficiencies by up-conversion of sub-bandgap light,” j. appl. phys., vol. 92, no. 7, pp. 4117-4122, 2002. [33] t. trupke, m. a. green, and p. würfel, “improving solar cell efficiencies by down-conversion of highenergy photons,” j. appl. phys., vol. 92, no. 3, pp. 1668-1674, 2002. [34] e. yablonovitch, “statistical ray optics,” j. opt. soc. am., vol. 72, pp. 899-907, 1982. [35] e. yablonovitch, and g. d. cody, “intensity enhancement in textured optical sheets for solar cells,” ieee transactions on electron devices, vol. ed-29, no. 2, pp. 300-305, 1982. [36] t. tiedje, e. yablonovitch, g. d. cody, and b. g. brooks, “limiting efficiency of silicon solar cells,” ieee transactions on electron devices, vol. ed-31, no. 5, pp. 711-716, 1984. [37] p. campbell, and m. a. green, “limiting efficiency of silicon solar cells under concentrated sunlight,” ieee transactions on electron devices, vol. ed-33, no. 2, pp. 234-239, 1986. [38] w. shockley, and h. j. queisser, “detailed balance limit of efficiency of p-n junction solar cells,” j. appl. phys., vol. 32, no. 3, pp. 510-519, 1961. [39] m. born, and e. wolf, principles of optics, 7th ed., cambridge university press, cambridge 1999. [40] z. yu, a. raman, and s. fan, “fundamental limit of nanophotonic light trapping in solar cells,” proc. nat. acad. sci. u.s.a., vol. 107, no. 41, pp. 17491-17496, 2010. [41] z. yu, a. raman, and s. fan, “thermodynamic upper bound on broadband light coupling with photonic structures,” phys. rev. lett., vol. 109, no. 17, 2012. [42] d. m. callahan, j. n. munday, and h. a. atwater, “solar cell light trapping beyond the ray optic limit,” nano lett., vol. 12, no. 1, pp. 214-218, 2012. [43] v. ganapati, o. d. miller, and e. yablonovitch, “light trapping textures designed by electromagnetic optimization for subwavelength thick solar cells,” ieee journal of photovoltaics, 2013. [44] a. boltasseva, and h. a. atwater, “low-loss plasmonic metamaterials,” science, vol. 331, no. 6015, pp. 290-291, 2011. [45] p. avouris, and m. freitag, “graphene photonics, plasmonics, and optoelectronics,” ieee j. sel. top. quant. electr., vol. 20, no. 1, 2014. [46] z. jakšić, s. m. vuković, j. buha, and j. matovic, “nanomembrane-based plasmonics,” j. nanophotonics, vol. 5, pp. 051818.1-20, 2011. [47] s. a. maier, and h. a. atwater, “plasmonics: localization and guiding of electromagnetic energy in metal/dielectric structures,” j. appl. phys., vol. 98, no. 1, pp. 1-10, 2005. [48] e. ozbay, “plasmonics: merging photonics and electronics at nanoscale dimensions,” science, vol. 311, no. 5758, pp. 189-193, 2006. [49] r. b. m. schasfoort, and a. j. tudos, eds., “handbook of surface plasmon resonance,” cambridge, uk: royal society of chemistry 2008. [50] c. bauer, g. kobiela, and h. giessen, “2d quasiperiodic plasmonic crystals,” scientific reports, vol. 2, pp. 0681.1-6, 2012. [51] m. maksimović, and z. jakšić, “emittance and absorptance tailoring by negative refractive index metamaterial-based cantor multilayers,” j. opt. a-pure appl. opt., vol. 8, no. 3, pp. 355-362, 2006. [52] k. vynck, m. burresi, f. riboli, and d. s. wiersma, “photon management in two-dimensional disordered media,” nat. mater., vol. 11, no. 12, pp. 1017-1022, 2012. [53] z. jakšić, "optical metamaterials as the platform for a novel generation of ultrasensitive chemical or biological sensors," metamaterials: classes, properties and applications, e. j. tremblay, ed., pp. 1-42, hauppauge, new york: nova science publishers, 2010. [54] s. m. vuković, z. jakšić, and j. matovic, “plasmon modes on laminated nanomembrane-based waveguides,” j. nanophotonics, vol. 4, pp. 041770, 2010. [55] s. m. vuković, z. jakšić, i. v. shadrivov, and y. s. kivshar, “plasmonic crystal waveguides ” appl. phys. a, vol. 103, no. 3, pp. 615-617, 2011. [56] p. drude, the theory of optics, dover publications, mineola, new york, 2005. [57] h. a. lorentz, the theory of electrons, dover publications, mineola, new york, 1952. [58] p. w. milonni, fast light, slow light and left-handed light, taylor & francis, abingdon, oxford, 2004. [59] s. v. boriskina, h. ghasemi, and g. chen, “plasmonic materials for energy: from physics to applications,” materials today, vol. 16, no. 10, pp. 375-386, 2013. [60] s. franzen, “surface plasmon polaritons and screened plasma absorption in indium tin oxide compared to silver and gold,” j. phys. chem. c, vol. 112, no. 15, pp. 6027-6032, 2008. [61] b. l. twu, and s. e. schwarz, “properties of infrared cat-whisker antennas near 10.6 μ,” appl. phys. lett., vol. 26, no. 12, pp. 672-675, 1975. 202 z. jakšić, m. obradov, s. vuković, m. belić [62] s. r. j. brueck, v. diadiuk, t. jones, and w. lenth, “enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma waves,” appl. phys. lett., vol. 46, no. 10, pp. 915-917, 1985. [63] d. derkacs, s. lim, p. matheu, w. mar, and e. yu, “improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles,” appl. phys. lett., vol. 89, no. 9, pp. 093103, 2006. [64] a. aubry, d. y. lei, a. i. fernández-domínguez, y. sonnefraud, s. a. maier, and j. b. pendry, “plasmonic light-harvesting devices over the whole visible spectrum,” nano lett., vol. 10, no. 7, pp. 2574-2579, 2010. [65] t. trupke, m. green, and p. würfel, “improving solar cell efficiencies by up-conversion of sub-bandgap light,” j. appl. phys., vol. 92, no. 7, pp. 4117-4122, 2002. [66] g. shvets, and y. a. urzhumov, “electric and magnetic properties of sub-wavelength plasmonic crystals,” j. opt. a-pure appl. opt., vol. 7, no. 2, pp. s23-s31, 2005. [67] c. bauer, and h. giessen, “light harvesting enhancement in solar cells with quasicrystalline plasmonic structures,” opt. express, vol. 21, no. 103, pp. a363-a371, 2013. [68] p. biagioni, j.-s. huang, and b. hecht, “nanoantennas for visible and infrared radiation,” reports on progress in physics, vol. 75, no. 2, pp. 024402, 2012. [69] m. quinten, optical properties of nanoparticle systems: mie and beyond, wiley-vch, weinheim, germany, 2011. [70] m. schmid, r. klenk, m. c. lux-steiner, m. topič, and j. krč, “modeling plasmonic scattering combined with thin-film optics,” nanotechnology, vol. 22, no. 2, 2010. [71] v. e. ferry, j. n. munday, and h. a. atwater, “design considerations for plasmonic photovoltaics,” adv. mat., vol. 22, no. 43, pp. 4794-4808, 2010. [72] t. k. sau, and a. l. rogach, eds., “complex-shaped metal nanoparticles: bottom-up syntheses and applications,” weinheim, germany: wiley-vch, 2012. [73] d. c. o'shea, t. j. suleski, a. d. kathman, and d. w. prather, diffractive optics: design, fabrication, and test, spie publications, bellingham, washington, 2003. [74] p. spinelli, e. ferry, j. van de groep, m. van lare, a. verschuuren, i. schropp, a. atwater, a. polman, v. e. ferry, m. a. verschuuren, r. e. i. schropp, and h. a. atwater, “plasmonic light trapping in thinfilm si solar cells,” journal of optics, vol. 14, no. 2, 2012. [75] p. berini, “long-range surface plasmon polaritons,” adv. opt. photon., vol. 1, no. 3, pp. 484-588, 2009. [76] r. d. r. bhat, n. c. panoiu, s. r. j. brueck, and r. m. osgood jr, “enhancing the signal-to-noise ratio of an infrared photodetector with a circular metal grating,” opt. express, vol. 16, no. 7, pp. 4588-4596, 2008. [77] a. alù, g. d'aguanno, n. mattiucci, and m. j. bloemer, “plasmonic brewster angle: broadband extraordinary transmission through optical gratings,” phys. rev. lett., vol. 106, no. 12, 2011. [78] p. genevet, j. lin, m. a. kats, and f. capasso, “holographic detection of the orbital angular momentum of light with plasmonic photodiodes,” nature communications, vol. 3, 2012. [79] p. berini, “plasmon-polariton waves guided by thin lossy metal films of finite width: bound modes of symmetric structures,” phys. rev. b, vol. 61, no. 15, pp. 10484-10503, 2000. [80] p. berini, “plasmon-polariton waves guided by thin lossy metal films of finite width: bound modes of asymmetric structures,” phys. rev. b, vol. 63, no. 12, pp. 1254171-12541715, 2001. [81] i. i. smolyaninov, w. atia, and c. c. davis, “near-field optical microscopy of two-dimensional photonic and plasmonic crystals,” phys. rev. b, vol. 59, no. 3, pp. 2454-2460, 1999. [82] j. b. pendry, a. j. holden, d. j. robbins, and w. j. stewart, “magnetism from conductors and enhanced nonlinear phenomena,” ieee t. microw. theory, vol. 47, no. 11, pp. 2075-2084, 1999. [83] r. h. fan, l. h. zhu, r. w. peng, x. r. huang, d. x. qi, x. p. ren, q. hu, and m. wang, “broadband antireflection and light-trapping enhancement of plasmonic solar cells,” phys. rev. b, vol. 87, no. 19, 2013. [84] t. w. ebbesen, h. j. lezec, h. f. ghaemi, t. thio, and p. a. wolff, “extraordinary optical transmission through sub-wavelength hole arrays,” nature, vol. 391, no. 6668, pp. 667-669, 1998. [85] j. b. pendry, l. martín-moreno, and f. j. garcia-vidal, “mimicking surface plasmons with structured surfaces,” science, vol. 305, no. 5685, pp. 847-848, 2004. [86] j. rosenberg, r. v. shenoi, t. e. vandervelde, s. krishna, and o. painter, “a multispectral and polarizationselective surface-plasmon resonant midinfrared detector,” appl. phys. lett., vol. 95, no. 16, 2009. [87] h. chen, c. t. chan, and p. sheng, “transformation optics and metamaterials,” nat. mater., vol. 9, no. 5, pp. 387-396, 2010. [88] d. r. smith, j. j. mock, a. f. starr, and d. schurig, “gradient index metamaterials,” phys. rev. e, vol. 71, no. 3, pp. 036609, 2005. plasmonic enhancement of light trapping in photodetectors 203 [89] m. dalarsson, m. norgren, n. dončov, and z. jakšić, “lossy gradient index transmission optics with arbitrary periodic permittivity and permeability and constant impedance throughout the structure,” journal of optics (united kingdom), vol. 14, no. 6, pp. 065102, 2012. [90] a. alù, and n. engheta, “achieving transparency with plasmonic and metamaterial coatings,” phys. rev. e, vol. 72, no. 1, pp. 016623, 2005. [91] a. i. fernández-domínguez, s. a. maier, and j. b. pendry, “collection and concentration of light by touching spheres: a transformation optics approach,” phys. rev. lett., vol. 105, no. 26, 2010. [92] j. ng, h. chen, and c. t. chan, “metamaterial frequency-selective superabsorber,” opt. lett., vol. 34, no. 5, pp. 644-646, 2009. [93] n. i. landy, s. sajuyigbe, j. j. mock, d. r. smith, and w. j. padilla, “perfect metamaterial absorber,” phys. rev. lett., vol. 100, no. 20, 2008. [94] e. e. narimanov, and a. v. kildishev, “optical black hole: broadband omnidirectional light absorber,” appl. phys. lett., vol. 95, no. 4, 2009. [95] t. yang, h. chen, x. luo, and h. ma, “superscatterer: enhancement of scattering with complementary media,” opt. express, vol. 16, no. 22, pp. 18545-18550, 2008. [96] l. novotny, and n. van hulst, “antennas for light,” nat. photonics, vol. 5, no. 2, pp. 83-90, 2011. [97] a. alu, and n. engheta, “theory, modeling and features of optical nanoantennas,” ieee t. antenn. propag., vol. 61, no. 4, pp. 1508-1517, 2013. [98] p. bharadwaj, b. deutsch, and l. novotny, “optical antennas,” adv. opt. phot., vol. 1, no. 3, pp. 438483, 2009. [99] a. f. koenderink, “plasmon nanoparticle array waveguides for single photon and single plasmon sources,” nano lett., vol. 9, no. 12, pp. 4228-4233, 2009. [100] p. j. schuck, d. p. fromm, a. sundaramurthy, g. s. kino, and w. e. moerner, “improving the mismatch between light and nanoscale objects with gold bowtie nanoantennas,” phys. rev. lett., vol. 94, no. 1, 2005. [101] t. grosjean, m. mivelle, f. i. baida, g. w. burr, and u. c. fischer, “diabolo nanoantenna for enhancing and confining the magnetic optical field,” nano lett., vol. 11, no. 3, pp. 1009-1013, 2011. [102] j. li, a. salandrino, and n. engheta, “shaping light beams in the nanometer scale: a yagi-uda nanoantenna in the optical domain,” phys. rev. b, vol. 76, no. 24, 2007. [103] e. n. grossman, j. e. sauvageau, and d. g. mcdonald, “lithographic spiral antennas at short wavelengths,” appl. phys. lett., vol. 59, no. 25, pp. 3225-3227, 1991. [104] g. volpe, g. volpe, and r. quidant, “fractal plasmonics: subdiffraction focusing and broadband spectral response by a sierpinski nanocarpet,” opt. express, vol. 19, no. 4, pp. 3612-3618, 2011. [105] y. alaverdyan, b. seplveda, l. eurenius, e. olsson, and m. käll, “optical antennas based on coupled nanoholes in thin metal films,” nature physics, vol. 3, no. 12, pp. 884-889, 2007. [106] c. simovski, d. morits, p. voroshilov, m. guzhva, p. belov, and y. kivshar, “enhanced efficiency of light-trapping nanoantenna arrays for thin-film solar cells,” opt. express, vol. 21, no. 13, pp. a714a725, 2013. [107] m. w. knight, h. sobhani, p. nordlander, and n. j. halas, “photodetection with active optical antennas,” science, vol. 332, no. 6030, pp. 702-704, 2011. [108] z. jakšić, m. milinović, and d. randjelović, “nanotechnological enhancement of infrared detectors by plasmon resonance in transparent conductive oxide nanoparticles,” strojniski vestnik/journal of mechanical engineering, vol. 58, no. 6, pp. 367-375, 2012. [109] l. dominici, f. michelotti, t. m. brown, a. reale, and a. di carlo, “plasmon polaritons in the near infrared on fluorine doped tin oxide films,” opt. express, vol. 17, no. 12, pp. 10155-10167, 2009. [110] s. franzen, c. rhodes, m. cerruti, r. w. gerber, m. losego, j. p. maria, and d. e. aspnes, “plasmonic phenomena in indium tin oxide and ito-au hybrid films,” opt. lett., vol. 34, no. 18, pp. 2867-2869, 2009. [111] c. rhodes, m. cerruti, a. efremenko, m. losego, d. e. aspnes, j. p. maria, and s. franzen, “dependence of plasmon polaritons on the thickness of indium tin oxide thin films,” j. appl. phys., vol. 103, no. 9, 2008. facta universitatis series: electronics and energetics vol. 34, no 3, september 2021, pp. 401-413 https://doi.org/10.2298/fuee2103401k © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper evaluation of electronic readiness level (a case of financial institution) hossein kardanmoghaddam, nafiseh sarboland department of computer engineering, birjand university of technology, birjand, iran abstract. electronic readiness is the ability to accept, use and apply information and communication technology in an organization. to effectively implement information and communication technologies, the first step is to measure the electronic readiness of companies and organizations to adopt these new technologies. in this research, the level of electronic readiness of mellat bank has been studied in khorasan razavi province in iran, from the perspective of the employees in cities of feyz abad, kashmar, bajestan, gonabad and bazar and central branches in khorasan razavi province. electronic readiness levels of bank mellat have been evaluated in the following dimensions: strategy readiness and it policies, it infrastructure readiness, management readiness, legal-juridical readiness, culture and human resource (personnel) readiness and process readiness. this research is based on descriptive research design and applied purpose. the statistical population of the personnel includes people with sufficient and necessary information in the field of financial and banking activities regarding e-commerce issues and e-readiness, which was a total population of 74 people. 50 questionnaires consisting of 30 questions were distributed using non-probability convenience sampling method of which 42 questionnaires were accurate. the spss15 software was used for analysis. the results of the analysis showed that the level of electronic readiness of mellat bank in khorasan razavi province in the studied branches is significantly higher than the average theoretical score (3) (p <0.001) in total and its components. this demonstrates the level of electronic readiness of mellat bank in khorasan razavi is high (above average) from the perspective of the studied personnel. also, there is no significant difference in the average score of the perspective of personnel based on gender, age, years of service, level of education, field of study and organizational position concerning the level of electronic readiness in mellat bank in khorasan razavi. key words: information technology, electronic commerce, electronic readiness, electronic banking, information technology infrastructure. received october 22, 2020; received in revised form april 20, 2021 corresponding author: hossein kardanmoghaddam department of computer engineering, birjand university of technology, birjand, iran e-mail: h.kardanmoghaddam@birjandut.ac.ir 402 h. kardanmoghaddam, n. sarboland 1. introduction researchers argue that at present we live in information technology era, in which knowledge and information are considered inevitable necessity, the reason for emerging this era, is new technologies known as information communication and technology [1]. with the emergence of new technologies and developing their applications, organizations and communities planned for making structural changes by drawing clear prospective to future goals and analyzing the current situation and turned to applying modern technologies for increasing efficiency and convenience of their citizens and personnel. for effectiveness of using ict, countries around the world should have necessary readiness in it infrastructures, have easy access to communication technologies for large part of population and can provide suitable collection of rules for suitable use of these technologies. for obtaining development goals, capacities of ict should be assessed along with organizations or countries’ readiness or electronic readiness. electronic readiness means participation rate of each community or organization in network space [2]. ict is one the newest modern achievements of humankind, and not only it has undergone deep changes, but also it affects patterns of life, research, education, management, transportation, security and commerce. using prefix “e” represents many dimensions of our life represents this issue [3]. by evaluation of electronic readiness rate of organizations, communities can evaluate their current situations in terms of different dimensions of it developments and increase their quality level by planning related indices and criteria. electronic readiness has dimensions and elements like telecommunication infrastructure, human resources and political and legal frameworks. most managers are aware of ict potentials and capabilities and consider it as redeemer of their organization; however, the most important challenge facing them is controlling ict power in organization’s goal framework. using ict without examining opportunities and threats related to using it and assessing its weak points and strongpoints within organization not only won’t remove the problem, but also will make it more complicated. electronic readiness is an environmental analysis tool and detects surrounding opportunities and threats and by expressing weak points and strongpoints of communities and organizations, presents a pattern of their electronic readiness level. generally, evaluation of electronic readiness represents preliminary recognition of environment and available infrastructures and provides criteria and data for assessing and evaluating ict effects. ict advancements and its developments to monetary and financial markets not only facilitate bank customers’ tasks, but also changes traditional banking methods. among this, banks and financial institutions are moving toward e-banking and presenting modern financial services, so they play a critical role in increasing e-commerce rate. regarding widespread application of ict in iran’s organizations and banks, the main research question is posed as: what is rate of electronic readiness among mellat bank in khorasan razavi county from the perspective of this organization’s staff? 2. research background electronic readiness indicates personal attitudes and tendency to using it services and products in people’s daily lives and electronic readiness can help people in fulfilling their professional goals [4]. electronic readiness increases perceived convenience and perceived productivity and using them [5]. also in another research it was demonstrated that electronic readiness has meaningful effect on technology acceptance [6]. brueckner (2002) [7] expressed that it can increase life quality of citizens of a city or country and evaluated evaluation of electronic readiness level (a case of financial institution) 403 electronic readiness of michigan municipality and finally presented a website for municipality called waes. flak et al (2005) [8] designed a model called megap-3 and by which they evaluated electronic municipalities of norway, the results indicated that authorities’ attitude to e-government is simplistic and burocratic government is more common. in [9], electronic readiness in two financial and commercial institutes of iran has been examined and compared. in this research, bridge institute model has been used. according to the research results, electronic readiness level of both financial and commercial institutes were not at suitable level and was lower than average. shirvani and baneshi (2009) in a research called “evaluation of electronic readiness of municipality of new city, baharestan along with fulfillment of electronic municipality” using dr. hamid noori model, evaluated new city, baharestan in iran. they finally evaluated electronic readiness of new city, baharestan as 38% and concluded that this municipality should increase its electronic readiness in three dimensions of technical infrastructure, systems and electronical service [10]. musa (2010) [11] evaluated electronic readiness of municipalities in iraq. he proposed a measuring tool for electronic readiness in municipalities and implemented this in two counties of iraq. tavanaa et al (2013) [12] by proposing a combined fuzzy model using topsis and anp presented a comprehensive model for evaluating electronic readiness in municipalities of usa and measured the municipalities of the states with their model. seakow [13] in a study titled electronical learning evaluation in thailand in comparison with ua university, effective and successful factors on electronic learning of us universities were examined and the results were compared with higher education in thailand. these results included the most important and effective factors like supporting resources and online programs, well-introduced programs, precise selection of early proposed programs and educating trainers for helping and developing efficient educational styles. olatokun [14] in a study titled evaluating top university of nigeria examined how ibadan university uses various opportunities of ict in performing its activities. in this study, five elements had the capability of using infrastructures, access to infrastructures, human resource abilities, ict policy in organization, legal framework, examined it development and this university got the score 2.57. richey (2003) [15] published the result of his researches in a book called “technological readiness and strategic interactive fit: dynamic capabilities impacting logistics service competency and performance”, and declared that technological readiness may influence the general performance of the organization. however, kue (2013) [16] showed that technological readiness has a positive moderator role between information system quality (isq) and organizational performance and didn’t approve of the direct relationship between these two. the efficient and effective performance of the electric government requires educated citizens, the skillful workforce, and the lack of resistance of employees against the adoption of new methods in the organization [17]. vasdinus vaati (2009) [18] investigated information and communication technologies readiness in the institute of higher education in kenya in order to establish the electronic library. in this research, the indices of information and communication technologies were designed, which aid the managers in making a suitable decision in order to evaluate the library’s information and communication technologies. tiemo & edewor (2011) [19] investigated the information and communication technologies readiness of the libraries of the institute of higher education in nigeria. results showed that the available equipment and facilities of the information and communication technologies services of these libraries were automatized. also, the results of this research list some limitations in applying information and communication technologies in these libraries, such as the poor budget, inadequate skillful workforce, the unreliability of electricity source, inadequate technical support, the poor performance of policies, and lack of reparations. in 404 h. kardanmoghaddam, n. sarboland another study, the most effective factors in the electronic readiness of small and big organizations were represented as the organization’s substructures, hardware and software, and workforce [20]. sivaraks et al (2011) [21] investigated the effect of electronic customer communication on the quality of services in commercial banks in thailand. their result of the analysis showed that electronic communication with costumers has a positive and meaningful influence on the quality of the services. hendi et al (2013) [22], carried out a research called “electronic readiness of mashhad university libraries”, according to cspp model by surveying model and applied type; this research was done with 54 members of the community as sample among librarians and administers of the libraries and informatics section. the results of this research indicate that there is no social, technical, and legal difference between the libraries of different universities. however, only public universities are in a more suitable situation in terms of economic and cspp model. by analyzing electronic readiness in university libraries, strengths and weaknesses were recognized, or in other words, digital-gap was identified. oraee et al (2013) [23] performed a research called “electronic readiness of esfahan university libraries”. the results of this research indicated that accessibility rate and readiness of substructure of information and communication technologies, information services, and activity readiness required information and communication technologies, information security, management readiness, and organizational culture more than the average level, although the preparation of organizational characteristics, communication with the external environment, the extent of policies, strategies, and legal relations about information and communication technologies, financial readiness, human workforce, and the extent of information and communication technologies usage had not been more than the average level. lee & chieng (2014) [24] consider electronic banking services from three aspects. furthermore, they believe that banks’ customers can receive electronic banking services in three levels (informing level, communication level, and transaction level). baversad et al (2015) [25] had done a research called analyzing the impact of information and communication technology (ict) on the performance of fajr petrochemical company by applying the balanced score card (bsc) model. the results of this research indicated that the greatest impact of information technology is related to internal processes, and the least impact is related to financial recovery. overall, the improvement of organizational performance based on the balanced score card (bsc) model is affected mostly by information technology. pollack & adler (2017) [26] had done a research called “skills that improve profitability: the relationship between project management, it skills, and small to medium enterprise profitability”. in this research, it has been assumed that the use of project management and it capabilities are suitable for the commercial performance of the organization. this research examined the mentioned hypothesis through positive impact testing in the usage of project management it capabilities on total sales’ rate of the work and profitability. this research’s date was achieved through two governmental longitudinal surveys consisting of small to medium companies in australia. the models were created to describe the relationship between project management, it capabilities, profitability, and total sale by the usage of the multiple linear regression method and binary logistic regression method. the result of this method indicated that they have a positive and special effect on the sale and profitability when controlling the effect of other business skills, project management, and it capability. khaemba et al (2017) [27] in a research called “factors influencing the readiness of citizens for e-government systems in kenya”, indicate that the indices related to the countries’ privilege of the information and communication technologies (ict) are insufficient for measuring citizens’ electronic readiness. the results of this research indicate that not paying attention to users performs as the disincentive factor in electronic readiness. that means in evaluation of electronic readiness level (a case of financial institution) 405 order to succeed in each electronic government plan, citizens ought to use the system perfectly. this research has mentioned efficient factors in citizens’ electronic readiness respectively: the poor substructures and budget limitation, executive performance, skills and attitude, citizenship participatory, digital-gap (discrepancy in benefit from technology facilities inter-citizens), culture, private, security concerns, etc. this research indicates that influential factors in electric readiness have to be considered in different social and economic groups in the society. in the research of tan, wang & sedera [28], they presented a model that indicates how to use it in order to perform operational agility in a company. the presented model indicates the it operational agility, new capabilities of resource management, negotiation process, and management actions to use it in the supply chain. the results of this research enable the managers to apply it capabilities with better methods and to take a step to reach operational agility. in the research which is done by masuri et al (2017) [29] they investigated various models and identifying various indices of the electronic readiness of the government agencies to establish the human resource management system. in this research, adequate dimensions and indices with organizations’ electronic readiness assessment were identified and extracted to establish the human resource management systems. the results of study by salek ranjbarzadesh et al (2013) [30] in examining electronic readiness of medical university of tabriz indicated that generally university personnel, students, managers and it specialists had acceptable electronic readiness. noori et al (2007) [31] in a study, evaluated the rate of electronic readiness in colleges of ferdowsi university of mashhad based on information access. the required information was collected from main parts of the model including organizational readiness, informational readiness, infrastructure readiness, human resource readiness and environmental readiness. the results indicated that colleges of ferdowsi university of mashhad in most of these parts especially organizational readiness, environmental readiness and human resources readiness have weak points. in this study, the level of electronic readiness has been examined in a number of mellat bank branches in northeastern iran. mellat bank is currently one of the largest banks in iran. mellat bank is introduced as the first largest private company between the top 100 iranian companies in 2017. this bank has more than 1390 branches throughout iran and the world in different cities such as london, yerevan, malaysia, hamburg, istanbul, ankara, izmir and seoul and has more than 19,000 personnel providing banking services [32-34]. mellat bank is included in the list of 30 largest banks in the middle east in 2020, with a capital value of $ 82.33 billion. it is ranked 16th in the ranking of major banks in the middle east and africa. this bank has increased its capital in one year and changed it ranking place from 20th place in 2019 to 16th place in 2020 [35]. khorasan razavi province in iran is one of the most important border provinces due to money and goods trade. mellat bank has many exchanges with other countries, especially afghanistan and turkmenistan. numerous traders and merchants are using banking and foreign exchange systems in this region, and there is a need for cooperation between these three countries (iranafghanistan-turkmenistan) to evaluate a comprehensive electronic readiness. so far, there has not been a comprehensive research on this issue in this region that includes all three countries. the level of electronic readiness can be examined by similar studies in the neighboring provinces of iran, afghanistan and turkmenistan as these regions have high currency exchanges, goods and services as well as high banking communications due to the train transportation. moreover, a model of the electronic readiness of the region can be proposed by a comprehensive analysis and assessing the strengths and weaknesses of the region. organizations will more confidently plan for the development of it-based activities by assessing the level of electronic readiness. this research was conducted on 406 h. kardanmoghaddam, n. sarboland the personnel of one of the biggest and most important banks of iran (mellat) in a geographical area which represents the advantage of this study compared to previous studies as they have not performed on this scale. 3. research in present research for using mellat bank personnel’s attitudes in khorasan razavi county (iran), the questionnaire in studies [26][36] was used in which 5 scale likert was used from totally disagree to totally agree (minimum score was one and maximum score was 5). this questionnaire had 30 questions that its operation variables included strategic readiness and it policies (5 items), it infrastructure readiness (7 items), management readiness (5 items), legal-juridical readiness (4 items), human resources (personnel) readiness and culture (5 items), process readiness (4 items). in this research for detecting test reliability, alpha cronbach method has been used calculated by spss15 for questions related to each variable. reliability of posed questions for measuring each variable using alpha cronbach has been presented in table 1. table 1 reliability table related to questionnaire items number variable alpha cronbach coefficient 1 strategy readiness and it policies 0.704 2 it infrastructure readiness 0.701 3 management readiness 0.822 4 legal-juridical readiness 0.704 5 culture and human resource (personnel) readiness 0.861 6 process readiness 0.702 7 total alpha 0.897 obtained alpha cronbach coefficient for all of the questions and individual variables indicate that used questionnaire has enough reliability. alpha cronbach coefficient for all variables was 0.897. in descriptive part, descriptive statistics (frequency, percentage) and in analysis part for examining research hypothesis one sample statistical t-test, independent t and one-way variance analysis in meaningful level of 0.05 have been used. this research is quantitative based on nature, applied based on purpose, and descriptive based on method. the population of this research included personnel of mellat bank branches in feyz abad, kashmar, bajestan, gonabad, bazar and headquarter in khorasan razavi county in iran during 2020. these subjects had enough and necessary information in financial and banking activities in e-ecommerce and electronic readiness. in sum, population is 74 subjects and by available non-probable method, 50 questionnaires were distributed including 30 questions and among this 42 questionnaires were usable. frequency distribution of studied people in this research was as following in terms of gender, 38 subjects (90.5%) were male and 4 subjects (9.5%) were female, 27 subjects (64.3%) were40 years old and less and 15 subjects (35.7%) were over 40 years old. 35 subjects (83.3%) of studied personnel had experience for 20 years and less and 7 subjects (16.7%) had experience more than 20 years. and frequency distribution of studied personnel based on educational level was according to this, 29 subjects (69%) had b.a. degree, 13 subjects (31%) had m.a. degree, 23 subjects (54.8%) of studied personnel studied humanities, 7 subjects (16.7%) evaluation of electronic readiness level (a case of financial institution) 407 studied basic science and 12subjects (28.6%) studied engineering. frequency distribution of studied personnel on the basis of organization tenure was according to this, 12 subjects (28.6%) of personnel were working in headquarter (grade one branch), 17 subjects (40.5%) were working in grade the second and 13 subjects (31%) were working in grade three. inferential findings are examination of electronic readiness of mellat bank in branches of feyzabad, kashmar, bajestan, gonabad, bazar and headquarter in khorasan razavi county in iran from the perspective of personnel as following table. table 2 comparison of mean score of the perspective of personnel about rate of electronic readiness of mellat bank in khorasan razavi county with theoretical mean score (3) readiness level average standard deviation mean difference t df p strategy and it policies readiness 3.59 0.14 0.59 27.46 41 <0.001 it infrastructure readiness 4.15 0.31 1.15 23.76 41 <0.001 management readiness 4.35 0.28 1.35 30.86 41 <0.001 juridical-legal readiness 4.01 0.25 1.01 26.59 41 <0.001 human resource (personnel) and culture readiness 3.90 0.30 0.90 19.32 41 <0.001 process readiness 3.92 0.41 0.92 14.42 41 <0.001 electronical readiness in total 4.00 0.20 1.00 32.53 41 <0.001 as the result of one sample t-test indicates, the mean score of studied personnel’s attitude about rate of electronic readiness in total and its elements in mellat bank of khorasan razavi county is meaningfully higher than theoretical mean score (3) (p<0.001). in other words, based on studied personnel’s attitude about rate of electronic readiness of mellat bank of khorasan razavi county is high (more than average). table 3 comparison of mean score of the perspective of studied personnel about rate of electronic readiness of mellat bank in khorasan razavi county based on gender variable gender average standard deviation t df p strategy and it policies readiness female 3.50 0.20 1.38 40 0.18 male 3.60 0.13 it infrastructure readiness female 3.75 0.61 2.93 40 0.006 male 4.20 0.25 management readiness female 4.00 0.67 2.79 40 0.008 male 4.38 0.19 juridical-legal readiness female 3.69 0.47 3.03 40 0.004 male 4.05 0.19 human resource (personnel) and culture readiness female 3.60 0.40 2.16 40 0.04 male 3.93 0.28 process readiness female 3.56 0.55 1.86 40 0.07 male 3.95 0.38 electronical readiness in total female 3.69 0.43 3.71 40 0.001 male 4.03 0.13 as the result of independent t-test indicates, the mean score of attitude about rate of electronic readiness of mellat bank of khorasan razavi county among male personnel is meaningfully higher than female personnel totally and elements of it infrastructure readiness, 408 h. kardanmoghaddam, n. sarboland management readiness, judicial-legal readiness, human resource (personnel) and culture readiness (p<0.05) but the mean score of attitude about rate of strategic readiness and it policies and process readiness wasn’t meaningfully different among male and female personnel (p>0.05). table 4 comparison of mean score of the perspective of studied personnel about rate of electronic readiness of mellat bank in khorasan razavi county based on age variable age average standard deviation t df p strategy and it policies readiness 40 years old and lower 3.57 0.14 1.26 40 0.21 higher than 40years old 3.63 0.13 it infrastructure readiness 40 years old and lower 4.16 0.33 0.16 40 0.88 higher than 40years old 4.14 0.30 management readiness 40 years old and lower 4.3 0.33 1.36 40 0.18 higher than 40years old 4.43 0.17 juridical-legal readiness 40 years old and lower 3.95 0.24 2.14 40 0.04 higher than 40years old 4.12 0.23 human resource (personnel) and culture readiness 40 years old and lower 3.87 0.32 0.61 40 0.55 higher than 40years old 3.93 0.27 process readiness 40 years old and lower 3.84 0.42 1.59 40 0.12 higher than 40years old 4.05 0.37 electronical readiness in total 40 years old and lower 3.97 0.23 1.35 40 0.19 higher than 40years old 4.05 0.12 as the result of independent t-test indicates, the mean score of attitude about rate of judicial-legal readiness of personnel higher than 40 years was meaningfully high related to personnel who were 40 years old or lower (p<0.05) but the mean score of attitude about rate of electronic readiness of mellat bank in total and its other elements among studied personnel didn’t have meaningful difference based on age (p>0.05). table 5 comparison of mean score of the perspective of studied personnel about rate of electronic readiness of mellat bank in khorasan razavi county based on educational level variable educational level average standard deviation t df p strategy and it policies readiness b.a 3.57 0.15 1.26 40 0.21 m.a 3.63 0.11 it infrastructure readiness b.a 4.10 0.36 1.72 40 0.09 m.a 4.27 0.14 management readiness b.a 4.34 0.32 0.33 40 0.75 m.a 4.37 0.20 juridical-legal readiness b.a 4.00 0.29 0.46 40 0.65 m.a 4.04 0.09 human resource (personnel) and culture readiness b.a 3.84 0.31 1.78 40 0.08 m.a 4.02 0.25 process readiness b.a 3.91 0.42 0.07 40 0.95 m.a 3.92 0.41 electronical readiness in total b.a 3.97 0.22 1.39 40 0.17 m.a 4.06 0.12 evaluation of electronic readiness level (a case of financial institution) 409 as the result of independent t-test indicates, the mean score of attitude about rate of electronic readiness of mellat bank in total and its other elements among studied personnel didn’t have meaningful difference based on educational level (p>0.05). table 6 comparison of mean score of the perspective of studied personnel about rate of electronic readiness of mellat bank in khorasan razavi county based on field of study variable field of study average standard deviation t df p strategy and it policies readiness humanities 3.56 0.16 1.55 (39,2) 0.23 basic sciences 3.63 0.08 technical and engineering 3.63 0.12 it infrastructure readiness humanities 4.09 0.37 1.13 (39,2) 0.33 basic sciences 4.22 0.11 technical and engineering 4.24 0.25 management readiness humanities 4.33 0.34 0.16 (39,2) 0.86 basic sciences 4.40 0.20 technical and engineering 4.35 0.19 juridical-legal readiness humanities 4.0 0.30 0.06 (39,2) 0.94 basic sciences 4.04 0.09 technical and engineering 4.02 0.20 human resource (personnel) and culture readiness humanities 3.81 0.31 2.24 (39,2) 0.12 basic sciences 4.00 0.23 technical and engineering 4.00 0.28 process readiness humanities 3.88 0.47 0.24 (39,2) 0.79 basic sciences 4.00 0.32 technical and engineering 3.94 0.36 electronical readiness in total humanities 3.95 0.25 1.32 (39,2) 0.28 basic sciences 4.06 0.08 technical and engineering 4.05 0.11 as the result of one way variance analysis test indicates, the mean score of attitude about rate of electronic readiness of mellat bank in total and its other elements among studied personnel didn’t have meaningful difference based on field of study (p>0.05). as the result of independent t-test indicates, the mean score of attitude about rate of electronic readiness of mellat bank in total and its other elements among studied personnel didn’t have meaningful difference based on working experience (p>0.05). as the result of one way variance analysis test indicates, the mean score of attitude about rate of electronic readiness of mellat bank in total and its other elements among studied personnel didn’t have meaningful difference based on organizational tenure (p>0.05). 410 h. kardanmoghaddam, n. sarboland table 7 comparison of mean score of the perspective of studied personnel about rate of electronic readiness of mellat bank in khorasan razavi county based on working experience variable working experience average standard deviation t df p strategy and it policies readiness 20 years and fewer 3.59 0.15 0.2 40 0.85 more than 20 years 3.60 0.12 it infrastructure readiness 20 years and fewer 4.14 0.32 0.65 40 0.52 more than 20 years 4.22 0.27 management readiness 20 years and fewer 4.33 0.30 1.13 40 0.27 more than 20 years 4.46 0.19 juridical-legal readiness 20 years and fewer 3.99 0.25 1.57 40 0.13 more than 20 years 4.14 0.20 human resource (personnel) and culture readiness 20 years and fewer 3.90 0.31 0.36 40 0.72 more than 20 years 3.86 0.28 process readiness 20 years and fewer 3.90 0.40 0.58 40 0.56 more than 20 years 4.00 0.50 electronical readiness in total 20 years and fewer 3.99 0.21 0.85 40 0.40 more than 20 years 4.06 0.16 table 8 comparison of mean score of the perspective of studied personnel about rate of electronic readiness of mellat bank in khorasan razavi county based on organizational tenure variable organizational tenure average standard deviation t df p strategy and it policies readiness grade 1 branch 3.6 0.15 0.51 (39, 2) 0.60 grade 2 branch 3.56 0.13 grade 3 branch 3.62 0.15 it infrastructure readiness grade 1 branch 4.25 0.15 0.79 (39, 2) 0.46 grade 2 branch 4.12 0.39 grade 3 branch 4.11 0.32 management readiness grade 1 branch 4.35 0.17 1.01 (39, 2) 0.37 grade 2 branch 4.28 0.38 grade 3 branch 4.43 0.20 juridical-legal readiness grade 1 branch 4.04 0.18 0.39 (39, 2) 0.68 grade 2 branch 3.97 0.32 grade 3 branch 4.04 0.20 human resource (personnel) and culture readiness grade 1 branch 3.98 0.26 0.85 (39, 2) 0.44 grade 2 branch 3.84 0.39 grade 3 branch 3.89 0.18 process readiness grade 1 branch 3.98 0.20 0.99 (39, 2) 0.38 grade 2 branch 3.81 0.46 grade 3 branch 4.00 0.48 electronical readiness in total grade 1 branch 4.05 0.09 1.10 (39, 2) 0.34 grade 2 branch 3.95 0.27 grade 3 branch 4.02 0.15 evaluation of electronic readiness level (a case of financial institution) 411 8. discussion and conclusion according to the obtained results, from the perspective of studied personnel, rate of electronic readiness of mellat bank in khorasan razavi in total and elements of strategy and it policies readiness, it infrastructure readiness, management readiness, juridicallegal readiness, human resource (personnel) and culture readiness and process readiness were high (more than mean score 4).also, the results indicated that the situation of mellat bank in khorasan razavi in realms of management, it infrastructure and processes were better than other fields. tabarsa et al (2016) [37] in a study examined the rate of electronic readiness of public organizations for successful deployment of electronical human resource management in yemen and concluded that rate of electronic readiness of public organizations in dimensions of it and technical infrastructures, human resources and cultural factors, judicial and legal infrastructures, management factors and strategies based on it and processes were high (more than mean score 3). total score of evaluating electronic readiness of studied organization was 3.15 and the situation of this organization was higher respectively in realms of management and strategies based on it and processes than other fields. the results of this study in the field of management factors and processes are close to the results of the present study. badamche et al (2012) [38] in a study examined and evaluated factors of electronic readiness in public libraries of east azerbaijan county and concluded that electronic readiness in public libraries of this county is in desirable level (53%). the results of these studies were compatible with the results of the present study. norouzi and jafarpour (2013) [39] in a study examined electronic readiness of tabriz university libraries from five dimensions including organization and management, using ict, information readiness, personnel and human resource readiness, communication with environment and other organization readiness. results indicated that electronic readiness of tabriz university libraries with score of 2.44 from maximum 5 is not desirable. maximum weak point was in environment dimension and communication with other organizations (2.31) and ict dimension (2.73) was in desirable condition related to other dimensions. the results of these studies are incompatible with the results of present study. evaluation of electronic readiness of organizations can have important role in recognizing different aspects of it in organization and economic institutions and exact planning for successful deployment of information and organizational systems like managing electronic human resources (li and maolin, 2015) [40]. awareness of processes and dimensions and electronic readiness indices help countries’ authorities and organization managers to be successful in designing ict strategies. many country authorities argue that ict can help their country to solve social and economic problems faced with them and they are ready to apply necessary changes for using these new technologies. they need to know real value of using ict and their trust should be boosted along this path. assessing electronic readiness is the first step along with turning goals to planned actions that leads to critical changes in people’s lives. as one of the most important tasks of management is assessing existing jobs within organizations, so designing effective frameworks is necessary and inevitable by which we can equally assess organizations and make organization personnel satisfied. the results of present paper indicated that the mean score of studied personnel’s perspective about electronic readiness rate of mellat bank in khorasan razavi county didn’t have meaningful difference in terms of gender, age, occupational experience, educational level and organization tenure. by searching in available 412 h. kardanmoghaddam, n. sarboland databases we didn’t find any study comparing and examining rate of electronic readiness of organizations based on demographic features. therefore, it wasn’t possible to compare this part of present study results with results of other studies. references [1] h. r. r. klidbari, a. davari, a. imani, “the examination and comparison of organizational ereadiness: case study: two financial and commercial organizations”, quarterly journal of bi management studies, vol. 1, no. 1, 2013. [2] a. molla, “the impact of e-readiness on ecommerce success in developing countries: firmlevel evidence”. institute for development policy and management, university of manchester, precinct center, manchester, m139 qh, 2004, uk. [3] m. menou, r. taylor, “a grand challenge: measuring information societies”, information society, vol. 22, no. 5, pp. 261–267, nov/dec 2006. [4] y. l. kuo, “technology readiness as moderator for construction company performance”, industrial management and data systems, vol. 113, no. 4, pp. 558–572, 2013. [5] j. s. c. lin, & h. c. chang, “the role of technology readiness in self-service technology acceptance”, managing service quality: an international journal, vol. 21, no. 4, pp. 424–444. [6] s. y. lam, j. chiang, & a. parasuraman, “the effects of the dimensions of technology readiness on technology acceptance: an empirical analysis”, journal of interactive marketing, vol. 22, no. 4, pp. 19–39, 2008. [7] a. brueckner, government & community building: a study of michigan local governments online. proceedings of the 65th asist annual meeting, e.g. toms (ed.), medford, 539–541, 2002. [8] l. flak, d. olsen & p. wollcat, “local e government in norway”, scandinavian journal of information systems, vol. 17, no. 2, 41–84, 2005. [9] h. rezaeeklidbari, a. davari, a. imani, “the examination and comparison of organizational e-readiness: case study: two financial and commercial organizations”, it management studies, vol. 1, no. 1, pp. 75– 90, 2012. [10] h.r. shirvani, z. baneshi, “baharestran new city electronic municipality’s preparation evaluation according to electronic municipality”, urban management, vol. 7, no. 23, pp. 59–70, 2009. [11] m. r. musa, “an e-readiness assessment tool for local authorities: a pilot application to iraq. a thesis submitted to department of public policy and administration in partial fulfillment of the requirements for the degree of master of public policy and administration”, 2010. [12] m. tavanaa, f. zanadic, & m.n. katehakis, “a hybrid fuzzy group anp–topsis framework for assessment of e-government readiness from a cirm perspective”, information & management, vol. 50, no. 7, pp. 383–397, 2013. [13] a. seakow, d. samson, “e-learning readiness of thailand’s universities comparing to the usa’s cases”, international journal of e-education, e-business,e-management and e-learning, vol. 2, no. 1, pp. 126–131, 2013. [14] w. olatokun, o. michael, o.a. opesade, “an e-readiness assessment of nigeria’s premier university (part 1)”, international education and development of using ict, vol. 2, no. 4, pp. 16–46, 2008. [15] r. g. richey, “technological readiness and strategic interactive fit: dynamic capabilities impacting logistics service competency and performance” (doctoral dissertation). university of oklahoma, 2003. [16] y. l. kuo, “technology readiness as moderator for construction company performance”, industrial management and data systems, vol. 113, no. 4, pp. 558–572, 2013. [17] s.a. alateyah, r.m. crowder, and g.b. wills, “identified factors affecting the citizen's intention to adopt e-government in saudi arabia”, international journal of social and industrial engineering, vol. 7, no. 8, pp. 2435–2443, 2013. [18] v. n. vasdinus, “ict-readiness for e-library (a case study of institution of higher learning)”, a project report submitted in partial fulfillment of the requirements for the master of science in information systems. university of nairobi, school of computing and informatics, 2009. [19] p. a. tiemo& n. edewor, “ict readiness of higher institution libraries in nigeria”, international journal of digital library systems, vol. 2, no. 3, pp. 29–38. [20] c. pornchai & k. bundid, “ict readiness assessment model for public and private organizations in developing country”, international journal of information and education technology, vol. 1, no. 2, pp. 99–107, 2011. https://www.magiran.com/volume/54342 evaluation of electronic readiness level (a case of financial institution) 413 [21] p. sivaraks, d. krairit, j.c.s. tang, “effects of e-crm on customer– bank relationship quality and outcomes: the case of thailand”, journal of high technology management research, vol. 22, pp. 141– 157, 2011. [22] f. hendi, a. soleimani nejad, f. doroudi, “survey of e-readiness base of cspp model in mashhad university libraries”, library and information science research, vol. 3, no. 2, pp. 31–50, 2013. [23] n. oraee, m. cheshmeh sohrabi, a. sanayei, h. jabbari noghabi, “e-readiness survey of university libraries in isfahan”, library and information science research, vol. 3, no. 2, pp. 113–132, 2013. [24] p. lee, m. chieng, “building consumer-brand relationship: a crosscultural experiential view, “psychology & marketing”, vol. 23, no.5, pp.10–30, 2014. [25] b. baversad, s.e. shojaei, & m. taheri, “influence of information and communication technology (ict) on fajr petrochemical company performance by using balanced scorecard model (bsc)”, iranian marketing articles bank (in persian), 2015. [26] m. b. dehnavi, j. rezaeenour, s.h. hani, “provide a conceptual model for assessing the e-readiness of government agencies using the delphi method”, in proceedings of the 2nd lahijan national conference on software engeering, 2012 (in persian). [27] s. n. khaemba, “factors affecting citizen readiness for e-government systems in kenya”. research in engineering and applied sciences, vol. 2, no. 2, pp. 59–67, 2017. [28] f.t.c. tan, b. tan, w. wang & d. sedera, “it-enabled operational agility: an interdependencies perspective”, information & management, vol. 54, no. 3, 292–303, 2017. [29] gh. tabarsa, m. a. haghighi, kh. al-masuri, “evaluating the e-readiness of government agencies to establish a successful electronic human resource management system in yemen”, public administration perspective, vol. 7, no. 26, pp. 77–104, 2017 (in persian). [30] f. salek ranjbarzadesh, m. h. biglu, s. hassanzadeh, n. safaei & p. saleh, “e-readiness assessment at tabriz university of medical sciences”, res dev med educ, vol. 1, pp. 3–6, 2013. [31] a. noori, m. kahani, h. afkhami, “assessing the level of electronic readiness of the faculties of ferdowsi university of mashhad with emphasis on access to information”, in proceedings of the 3rd international conference on information and knowledge technology (ikt2007), pp. 1–8 (in persian). [32] www.codal.ir [33] www.bankmellat.ir [34] www.mellatib.ir [35] www.thebanker.com [36] m. b. dehnavi, j. rezaeenour, “the study of ereadiness in melli bank of guilan province in experts' view”, thesis for obtaining a master's degree in public administration, islamic azad university, 2012 (in persian). [37] g. a. tabarsa, m. a. haghighi, k. al-maswary, “a survey on e-readiness of public organizations for successful emplementation of e-hrm in yemen”, journal of public administration perspective, vol. 7, no. 26, pp. 77–104, 2016. [38] r. badamche vaughne, “review and evaluation of electronic readiness criteria indicators in the public libraries of the country, case study: public libraries of east azerbaijan province (iran)”, master thesis, islamic azad university, north tehran branch, 2012 (in persian). [39] y. norouzi, i. jafarpour, “survey of the e-readiness in university libraries: the case of tabriz university libraries”, library and information sciences, vol. 16, no. 1, pp. 123–150, 2013. [40] l. ma & m. ye, “the role of electronic human resource management in contemporary human resource management”, open journal of social sciences, vol. 3. pp. 71-78, 2015. https://en.symposia.ir/lncse02 https://en.symposia.ir/lncse02 http://www.bankmellat.ir/ http://www.mellatib.ir/ 13158 facta universitatis series: electronics and energetics vol. 38, no 2, june 2025, pp. 355 374 https://doi.org/10.2298/fuee2502355v © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper machine learning-driven statistical analysis of indian restaurants: insights from the zomato dataset ayushi vaidhy1, deepak batham2, rachit jain3, amit kumar manjhwar1 1dept. of computer science engineering, madhav institute of technology & science, deemed university, gwalior, india 2dept. of electronics engineering, madhav institute of technology & science, deemed university, gwalior, india 3dept. of it, prestige institute of management & research, gwalior, india orcid ids: ayushi vaidhy https://orcid.org/0009-0007-8701-9685 deepak batham https://orcid.org/0000-0003-4499-7239 rachit jain https://orcid.org/0000-0002-3001-2438 amit kumar manjhwar https://orcid.org/0000-0002-9577-6295 abstract. advances in technology and web applications, such as zomato, have significantly transformed the restaurant industry by catering to diverse culinary preferences and offering a wide variety of food options to customers. this platform stores a vast amount of data that can be analyzed for valuable insights. the paper examines dining habits and restaurant performance through exploratory data analysis (eda) and machine learning (ml) algorithms, helping customers find the best restaurants based on cost, ratings, location, food quality, and service. the study applies several ml models, including linear regression (lr), decision tree (dt), random forest (rf), gradient boosting (gb), xgboost, k-nearest neighbors (knn), and lasso to the zomato dataset. the results are evaluated using metrics such as accuracy, mean absolute error (mae), model fit time, and model prediction time. among these models, dt and rf show the highest predictive accuracy, with rf achieving 97.86% and outperforming other algorithms. these findings provide restaurant owners with valuable insights to enhance customer satisfaction, optimize pricing, and improve service quality. the study also demonstrates the important role of ml in the restaurant industry and suggests future opportunities for integrating realtime data, deep learning models, and sentiment analysis to offer even more precise predictions and insights. key words: machine learning, eda, zomato, data analysis, accuracy received october 29, 2024; revised february 17, 2025 and march 4, 2025; accepted march 9, 2025 corresponding author: rachit jain dept. of it, prestige institute of management & research, gwalior, india e-mail: rachit2709@gmail.com https://orcid.org/0009-0007-8701-9685 https://orcid.org/0009-0007-8701-9685 https://orcid.org/0000-0003-4499-7239 https://orcid.org/0000-0002-3001-2438 https://orcid.org/0000-0002-9577-6295 356 a. vaidhy, d. batham, r. jain, a. manjhwar 1. introduction the global restaurant industries are undergoing a profound transformation driven by the technological advancements, shifting consumer expectations, multiple culinary choices, diverse food quality and tastes, and an unprecedented surge in data available through online platforms like youtube, facebook, whatsapp, instagram, and restaurant websites. this wealth of data, particularly customer reviews, is reshaping the restaurant landscape [1]. the restaurant industries are encountering unique challenges, but also huge opportunities, thanks to the fusion of data science and artificial intelligence (ai) tools, powered by machine learning (ml) algorithms. these technologies are revolutionizing how restaurants predict price, assess food quality, and understand customer preferences, serving as a key driver for sustainable growth [1-3]. ml, a subset of ai closely related to deep learning (dl), is transforming how restaurants navigate the complexities of modern consumer behavior. fig. 1 illustrates the fundamental model and correlation of ai, ml, and dl, which utilize algorithms to analyze the vast datasets, identify patterns, making predictions that enable businesses to make informed, datadriven decisions. this technology plays a critical role in navigating the complexities of the modern restaurant industries. as consumer preferences constantly change and vast amounts of data are generated daily, traditional approaches of examination often fall short. ml allows for the efficient processing and analysis of this data, providing accurate predictions on customer behavior, food quality, pricing trends, and more. by integrating ai and ml into restaurant management, stakeholders can make better decisions, optimize operations, enhance customer satisfaction, and drive long-term growth. with the help of predictive models, restaurants can stay ahead of industry trends and maintain a competitive advantage. in this evolving landscape, leading platforms such as zomato, swiggy, freshmenu, dunzo, guruhub, eatsure, ubereats, deliveroo, domino’s are playing crucial role, acting as a bridge between the customers and the vast tapestry of dining establishments [4]. zomato is an aggregator of indian restaurants and a food transportation company founded by deepinder goyal and pankaj chaddah in the year 2008. since 2023, zomato has expanded its offerings, providing food delivery option from partner restaurants, along with restaurant information, menus, and user reviews across more than 1,000 cities and towns in india [5]. the zomato restaurant dataset is a treasure trove of culinary information that encapsulates the essence of the digital culinary revolution [6-7]. by analyzing these datasets, restaurant can gain valuable insights into key metrics such as the average cost of food for two people, emerging consumer trends and preferences, the best restaurants in different locations, food quality and taste, and service standards. identifying patterns and correlations within this data can empower restaurant owners and stakeholders to anticipate and adapt to shifting customer demands, enabling them to stay competitive and relevant in an ever-changing industry [1]. in this paper, various restaurants data available on kaggle, collected from the zomato app, is used. this dataset contains a total of 2,11,944 entries with 26 distinct entities (see table 1). each entity serves a unique purpose in characterizing the restaurant details. this zomato dataset is analyzed using eda [8-10] under various evaluation parameters, including the top ten restaurant chains in india by the number of outlets and average ratings, the top five restaurants by establishment type, and the relationship between price range and restaurant ratings. additionally, several ml algorithms are applied to the zomato dataset, such as linear regression (lr) [11], decision tree (dt) [12], random forest (rf), gradient boosting (gb), xgboost, k-nearest neighbors (knn) [13], and machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 357 least absolute shrinkage and selection operator (lasso) [13-14]. the results are evaluated using metrics of accuracy, mean absolute error (mae), model fit time, and model prediction time. based on the simulation results on the zomato dataset, the dt and rf algorithms exhibit the highest accuracy and the lowest mae compared to the other algorithms. these findings can assist restaurant owners in making appropriate decisions that could potentially increase their earnings or profits. fig. 1 illustration of ai, ml and dl remaining paper is organized into six sections. section 2 discusses the related work. section 3 presents data description, pre-processing, and workflow. eda and its results are covers in section 4. section 5 describes the ml algorithms used in this study. section 6 presents the obtained results and their analysis. finally, section 7 concludes the research work. 2. related work the present section discusses related work. recently, several studies have focused on restaurant data analysis and price prediction. in [1], authors review various food recommendation systems (frs) and analyze them using ml algorithms. the primary goal of this study is to bridge the gap between the development of frs and other recommender systems. out of 2738 studies, the authors selected only 67 high-quality studies for analysis. the study highlights that there is a wide range frs, most of which are designed to offer nonpersonalized suggestions using ml techniques and content-based filtering. this information can guide future research in selecting appropriate strategies for developing frs. in [4], authors applied lr technique to identify the best restaurant by location. this analysis is based on customer feedback obtained from the zomato dataset, specifically satisfaction ratings. in [6], the authors used eda tools to examine restaurants rating in bangalore. in [15], the 358 a. vaidhy, d. batham, r. jain, a. manjhwar authors used dt and rf algorithms on a sample of 8,500 data points to classify restaurants based on their service attributes. the results showed that the dt classifier, with 63.5% accuracy, outperformed the rf classifier, which had 56% accuracy. in [16], the authors examined various restaurants on the basis of food quality and services offered by the restaurant owners. the analysis revealed that the rating of a restaurant depends on many factors such as reviews, area, average cost of mile for two persons, votes, cuisines, and restaurant type. another important aspect to analyze restaurant is the offered food hygiene and its quality. traditional quality measurement methods often require significant resources, skilled labor, and complex analytical techniques, making quick and cost-effective solutions essential. the food industry faces challenges in evaluating food quality due to the need for expensive equipment, intricate processes, and thorough analyses to ensure that the product sold to consumers are safe and of the highest quality. in this context, the authors in [17] review food quality assessment using traditional methods, advanced ml algorithms, and the electronic nose system (ens). ens technology is an innovative approach that can distinguish between different aromas using a variety of electronic sensors, showing promising results when applied to various food items. ml algorithms play a crucial role in analyzing the complex data collected by ens, enabling accurate food identification and quality assessment based on distinct odors. this review investigates the combination of ens and ml algorithms, suggesting a powerful non-destructive tool for food quality assessment that surpasses conventional, time-consuming analytical methods. in [18], the authors predicted restaurant rating and popularity using ml algorithms on the yelp dataset. logistic regression, naive bayes, knn, and support vector machine (svm) were used, with logistic regression achieving the best performance. in [19], authors applied various ml algorithms to classify indian dishes as vegetarian or non-vegetarian from images. among these algorithms, the rf algorithm showing the highest accuracy compared to dt, knn, and svm. in [20], authors identified and categorized the indian dishes from images by using deep learning model such as convolution neural network (cnn). in [21], authors used ml algorithms such as logistic regression and naive bayes, and deep learning models like cnn and bi-directional long short-term memory (bi-lstm) for sentiment analysis of restaurant reviews. both cnn and bi-lstm model achieves the accuracy of 89% and 90%, respectively. in [22], authors calculate foods calories by traditional indian food images, and classified using cnn model. in [23], authors classified indian food items among 5000 images, 15000 annotations with 30 food class by applying yolo5, yolo7 and yolo8 algorithms. the algorithms are compared on the metric of accuracy, recall, and speed. when setting up a new restaurant, it is important to conduct a basic survey covering market trend, customer preference, location, food choices, taste, and customer’s spending capacity per person. building on this, in [24] authors applied regression models to predict outcomes based on these easily controlled parameters before opening a new restaurant. the model’s metrics were then compared to determine the optimal regression model for future predictions. it has been observed form this study that ml algorithms play a crucial role in analyzing datasets collected from various home delivery food apps and other platforms. these data can be used to assess the restaurant ratings, earnings, customer preferences, their needs at different time slots such as early morning (for breakfast), afternoon (for lunch), evening snacks, and dinner habits, drink choices, and more. in this paper, eda and ml algorithms are applied to analyze the top restaurants, food choices, and established restaurants in india using the zomato dataset. machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 359 3. dataset description, pre-processing, and work flow this section deals with dataset description, pre-processing, and flow of the presented work. dataset description is presented in section 3.1. pre-processing of data such as data cleaning and handling of missing values are discussing in section 3.2. section 3.3 represents and discusses the flow diagram of present work. 3.1. dataset description the foundation of this research is based on the zomato restaurant dataset sourced from kaggle, encompassing a total of 2,11,944 entries with 26 distinct columns. each column serves a unique purpose in characterizing restaurants detail. table 1 represents key entities and their description. table 1 key entities and their description s. no. entities entity description 1 res_id a unique identifier for each restaurant 2 name name of the restaurant 3 establishment type of establishment or restaurant category 4 url web url associated with the restaurant 5 address physical address of the restaurant 6 city the city where the restaurant is located 7 city_id a numerical identifier for the city 8 locality the specific locality or neighborhood within the city 9 latitude the geographical latitude coordinate of the restaurant's location 10 longitude the geographical longitude coordinate of the restaurant's location 11 zipcode the postal code of the restaurant's location 12 country_id the numerical identifier for the country (india in this case) 13 locality_verbose a detailed description of the restaurant's locality 14 cuisines the types of cuisines served by the restaurant 15 timings information about the operating hours of the restaurant 16 average_cost_for_two the average cost for two people dining at the restaurant 17 price_range a numerical indicator of the price range of the restaurant 18 currency the currency used for pricing 19 highlights notable features and services offered by the restaurant 20 aggregate_rating the overall rating of the restaurant 21 rating_text a textual representation of the restaurant's rating (e.g., excellent’, very good’. etc.) 22 votes the number of user votes or ratings received by the restaurant 23 photo_count the count of photos associated with the restaurant 24 opentable_support indicates whether the restaurant supports reservations through open table 25 delivery a binary indicator (0 or 1) for restaurant delivery service availability 26 takeaway a binary indicator (0 or 1) for restaurant takeaway service availability 360 a. vaidhy, d. batham, r. jain, a. manjhwar 3.2. data cleaning and handling of missing values ensuring data integrity is paramount for meaningful analysis. several techniques have been employed in the data cleaning and handling of missing values. ▪ removing duplicates: all the duplicate entries based on ‘res_id’ have been removed or eliminated to maintain dataset consistency. ▪ cleaning establishment values: square brackets enclosing ‘establishment’ values have been removed for readability, and empty values were replaced with ‘na’. ▪ handling missing values: missing values in ‘address’ and ‘timings’ have been imputed with placeholder values (‘unknown’ and ‘not available’, respectively), while missing values in ‘opentable_support’ are filled with the default value ‘0’. these steps made the dataset meaningful, robust, and free from inconsistencies and made it ready for exploration and predictive modelling. the updated dataset focuses on key attributes essential to facilitating a more concise and effective analysis. initially, the dataset contained 2,11,944 entries. after handling missing values and feature selection, approximately 1,95,000 entries were retained for training and testing. a 90-10 split was applied, where 90% of the data was used for training, and 10% for testing. 3.3. work flow fig. 2 shows flow diagram of the present work. first collect the zomato dataset from the kaggle website. these data are pre-processed to avoid errors and null entity, then eda is applying to the filtered dataset to extract the relevant features of restaurants. now, select the relevant features and transform them for modelling. the ml algorithms used 90% data for training purpose and 10% data for testing. the performance of each algorithm is then evaluated and compared. fig. 2 flow diagram of present work 4. eda the section provides a detailed description of the eda tool and its analysis report. data scientists use eda as a fundamental and vital tool to examine, explore, and summarize dataset’s key features, frequently using data visualization techniques [8], [9], [10]. it can help to identify patterns within data and determine errors and relationships among variables machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 361 used in the dataset. the purpose of exploratory analysis is to ascertain the validity of the data generated, thereby assisting stakeholders in obtaining answers to their inquiries regarding confidence intervals, categorical variables, and standard deviations. after eda is finished, conclusions are made, and its features can be applied to more complex data analysis or modelling, such as machine learning [8], [9], [10]. in this paper, eda is used for zomato restaurant dataset to identify the patterns, relationships, key observations including harnessing various data visualization techniques to achieve desired business objectives and goals. the data visualization and interpretations for eda is expressed in terms of top restaurants chain in india by the number of outlets, average rating, type of establishment, and the relationship between the price range and rating. the extracted results are shown in graph and discussed separately. a. top ten restaurant chain in india by number of outlets: our exploration began with a horizontal bar chart, spotlighting domino’s pizza as the leading chain with a substantial presence across india shown in fig. 3(a). this dominance hints at successful expansion or strong brand recognition, presenting potential growth opportunities. b. top ten restaurant chain in india by average rating: fig. 3(b) shows that absolute barbecues (ab’s) emerged as the leader in average ratings, reflecting consistent customer satisfaction. high average ratings imply quality service, influencing customer choices and fostering loyalty. c. top five establishment type restaurants: based on the eda analysis shown in fig. 4(a), quick bites took center stage, suggesting a prevalent establishment type in the indian restaurant landscape. this insight informs strategic decisions for entrepreneurs and investors, recognizing the popularity of specific establishment types. d. relationship between price range and ratings: a boxplot unveiled the intricate relationship between price range and aggregate ratings shown in fig. 4(b). understanding this correlation aids in the formulation of effective pricing strategies, shedding light on how pricing impacts customer perceptions. e. other observations from eda ▪ approximately 35% of indian restaurants are a part of chain with dominant players like domino's pizza, cafe coffee day, and kfc indicating a robust market presence. ▪ barbecues and grill food chains boast the highest average ratings, signaling positive customer sentiment. quick bites and casual dining establishments, on the other hand, lead in terms of the number of outlets. ▪ bangalore emerges as the city with the highest number of restaurants, while gurgaon boasts the highest-rated restaurants with an average rating of 3.83. hyderabad takes the lead in critical votes. ▪ north indian cuisine claims the top spot in preferences, closely followed by chinese. interestingly, international cuisines tend to receive higher ratings than local offerings. ▪ gastro pubs, romantic dining, and establishments offering craft beer are particularly well-rated by customers. the majority of restaurants fall within the 3 to 4 rating range. ▪ the majority of restaurants fall within the budget-friendly category, with an average cost ranging between rs. 250 to rs. 800. notably, higher average costs correlate with a higher likelihood of a restaurant securing a higher rating. 362 a. vaidhy, d. batham, r. jain, a. manjhwar 0 100 200 300 400 baskin robbins burger king barbeque nation pizza hut mcdonalds subway keventers kfc cafe coffee day dominos pizza 110 112 125 130 178 189 202 204 315 399 number of outlets in india n am e o f r es ta u ra n t (a) 0 1 2 3 4 5 the fml lounge mocha pa pa ya agent jacks the fishermans wharf momo i am pirates of grill chilis american grill & bar chilis grill & bar abs-absolute barbecues 4.48 4.4818 4.5 4.5167 4.54 4.56 4.62 4.62 4.7444 4.775 average rating o u tl et s in i n d ia (b) fig. 3 horizontal bar graph of (a) top 10 restaurant chain in india by the number of outlets, and (b) top 10 restaurant chain in india by average rating out of five machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 363 baskin robbins burger king barbeque nation pizza hut mcdonalds 0 1 2 3 4 5 6 7 x 10 4 64278 61104 22721 8259 7950 n u m b er o f r es ta u re n ts ( b y e st ab li sh m en t ty p e) top 5 establishement types (a) (b) fig. 4 (a) vertical bar graph shows the top five category wise established number of restaurants in india, (b) boxplot shows the relationship between the price range and aggregate rating of restaurants in india 364 a. vaidhy, d. batham, r. jain, a. manjhwar 5. machine learning algorithms in ml, dataset is divided into two subsets; the training set, and the testing set. the training set is used to train the algorithms (i.e., models), while the testing set evaluates the algorithms performance. here, 90% data is used for training, and the rest 10% data is used for testing purposes. this division ensures that the models generalize well to new, unseen data. several ml models are available in the literature. in this paper, we have analyzed lr, dtr, rf, gb, xgboost, knn, and lasso to predict best restaurants under different criterions such as restaurant rating, price ranges, type of establishment, food hygiene, service quality, and location. ml algorithms are evaluated on the basis of metrics of rsquare (or accuracy (%)), mae, model fit, and model prediction time. all such algorithms are discussed separately in detail. 5.1. linear regression (lr) lr is a supervised learning technique that determines a linear relationship between x (input) and y (output) by predicting the value of the dependent variable (y) based on the provided independent variable (x). thus, the term "linear regression," with y = mx + c serving as the lr hypothesis, is used. the line that fits our model the best is the regression line. in order to produce scientifically valid and dependable predictions, lr employs a well-established statistical process. the model can be trained rapidly, and the algorithm is simple to comprehend [11], [19]. the graphical representation of linear regression is provided in fig. 5. fig. 5 linear regression machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 365 5.2. decision tree (dt) in dt [12], [15], data is structured as a tree, where each internal node represents a decision based on the input features. dt introduces non-linearity to the predictive process and captures intricate relationships between features and the target variable [12]. it offers flexibility in handling diverse data types, presenting a viable alternative for scenarios with complex non-linear patterns. the splitting process begins at the root node and proceeds along a branch tree to the leaf node, or terminal node, which houses the algorithm's prediction or result. dt employs a top-down methodology. a binary tree that shows how a decision node divides into two nodes according to certain conditions can be used to represent each subtree of the dt model. regression trees are dts in which the target variable or the terminal node is capable of accepting continuous values. the fundamental structure of the decision tree is presented in fig. 6. fig. 6 basic structure of decision tree 5.3. random forest (rf) rf [6], [16] can handle both the regression and the classification problem by using several dts and resampling methods known as aggregation, or bagging, and bootstrapping. using bagging, the smaller models are combined to create an rf model, which produces a single prediction value. the fundamental concept is to integrate several dts to determine the final result instead of depending only on individual dts. rf model stands out as the accuracy leader, combining the merits of ensemble learning with feature importance analysis. by aggregating predictions from multiple correlated trees and introducing randomness in feature selection, rf excels in minimizing both bias and variance. due to its versatility and ability to handle complex relationships make it the model of choice for robust predictions in the context diverse and dynamic zomato restaurant dataset. this approach not only enhances predictive accuracy but also provides insights into the key factors influencing dining costs. after splitting the data, rf model is initiated to train the data. this is done with the help of randomforestregressor() module of scikit-learn. the fundamental working principle of random forest is illustrated in fig. 7. 366 a. vaidhy, d. batham, r. jain, a. manjhwar fig. 7 structural representation of the random forest 5.4. k-nearest neighbor (knn) knn is an instance-based, supervised learning algorithm that is non-parametric. new data points are categorized according to the predominant class of their closest neighbors. the algorithm keeps track of every case that is accessible and categorizes newly discovered cases based on their feature space majority vote. the value of k represents the number of neighbors which is a crucial parameter that can significantly impact the model's performance. graphical representation of the knn model, showing classification into three clusters, is presented in fig. 8. fig. 8 graphical representation of the knn model machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 367 5.5. gradient boosting (gb) the gb machine uses nonparametric regression and back-fittings to create predictive models. rather of creating a single model, the gb creates an initial model and then iteratively fits additional models by minimizing the loss function in order to generate the best accurate model [14]. if you want to forecast a continuous value, like age, weight, or cost, you can apply regression with it. this is not the same as applying regression analysis. it differs slightly from the configuration utilized for classification. in gb, decision trees are employed as a weak learner. dts convert the data into a tree representation to solve the ml problems. in tree format, a class label is shown by each leaf node and an attribute by each interior node. in general, the squared error serves as the loss function (especially for regression situations). in gb, differentiable loss function is required and the model uses same notations for the residuals as used in lr. a weak model that maps features to that residual is trained by gb regression. by adding the residual that a weak model predicted to the input of the current model, this technique gently nudges the model in the direction of the intended outcome. performing these actions repeatedly will enhance the model's overall forecast. fig. 9 presents the working mechanism of the gradient boosting algorithm. the following are the general procedures we use to apply gb regression: i. pick a week learner ii. apply an additive framework iii. establish the loss function iv. minimize the loss function fig. 9 working mechanism of gradient boosting 5.6. extreme gradient boost (xgboost) xgboost is a supervised machine learning method for classification and regression. this approach, which builds on dts, is superior than approaches like rf and gb. it uses a variety of optimization techniques and performs well with huge, complex datasets. an initial prediction is created before utilizing xgboost to fit a training dataset. using a similarity score for the residuals, a dt is constructed with the data. it is computed how similar the data in a leaf are, and how much more similar they become in the next split. to identify a feature and a threshold for a node, the gains are compared. the residuals are also used to calculate the output value for each leaf. the anticipated value and the observed values are used to compute residuals. based on the observed and expected values, the residual is calculated. in classification, the log of chances and probabilities is usually used to calculate the values. the tree's output becomes the dataset's new residual, which is then utilized to build another tree. until the residuals cease decreasing or after a predetermined number of repetitions, this process is repeated. fig. 10 illustrates the structural framework of the xgboost algorithm. 368 a. vaidhy, d. batham, r. jain, a. manjhwar fig. 10 fundamental working principle of xgboost 5.7. lasso regression analysis techniques like lasso (least absolute shrinkage and selection operator) combine regularization with variable selection to improve predictability and interpretability [14]. it's a kind of linear regression where the coefficients of less significant features are encouraged to decline towards zero by including a penalty term in the loss function. a sparse model is the outcome, as these features are essentially eliminated from the model. fig. 11 demonstrates the difference between lasso and linear regression. fig. 11 lasso vs linear regression machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 369 6. ml algorithm results and analysis this section represents the results obtained by different ml algorithms and their analysis. the output metrics for evaluating ml algorithms are accuracy (r-squared (%)), mae, model fit time, and model prediction time [25-27]. the ml algorithms were developed and trained using python programming language on google collab platform [28], which provides a cloud-based environment with gpu acceleration for faster model training. the details of the software tool are shown in table 2. table 2 details of software tool category details platform google collab (cloud-based environment) processor virtual cloud-based cpu/gpu ram 12 gb (allocated by google collab) programming language python libraries used pandas (data manipulation), numpy (numerical computations), matplotlib & seaborn (visualization), scikit-learn (ml algorithms), xgboost (advanced boosting) the performance of each ml algorithm heavily depends on the careful tuning of hyperparameters. table 3 presents the specific hyperparameter configurations selected for each model, which were optimized to achieve the best performance in terms of accuracy, mae, model fit time, and model prediction time. the hyperparameters were fine-tuned using grid search and cross-validation techniques to identify the best configuration for each algorithm. table 3 hyperparameter configurations & values model key hyperparameters optimal values selected linear regression (lr) none default decision tree (dt) max depth 15 min samples split 4 random forest (rf) number of estimators 150 max depth 20 min samples split 5 k-nearest neighbors (knn) number of neighbors (k) 7 gradient boosting (gb) learning rate 0.05 number of estimators 100 max depth 4 xgboost learning rate 0.1 number of estimators 150 max depth 6 lasso regression alpha 0.01 the obtained numerical values of evaluating metrics for each ml algorithms are shown in table 4. the first evaluating criterion is accuracy, defined as the closeness to the true value. fig. 12(a) shows a bar graph of accuracy of each ml algorithms. the obtained accuracy is 63.51%, 97.71%, 97.86%, 81.31%, 79.63%, 89.48%, and 63.51% for lr, dt, rf, knn, gb, xgboost, and lasso, respectively. among these dt and rf show highest accuracy, 370 a. vaidhy, d. batham, r. jain, a. manjhwar whereas lr and lasso show minimal. dt algorithm show highest accuracy because it has better non-linearity handling capability, feature interactions, and offering flexibility for capturing complex relationship and complex data structures, which is why they achieve higher accuracy. however, rf regression algorithm shows standout performance, demonstrating superior predictive accuracy of 97.86% through ensemble learning and feature importance analysis. rf has the ability to mitigate over fitting, handle diverse data types, and identify influential factors makes it the optimal choice for analyzing the complex zomato data. however, lr and lasso show the lowest accuracy because they assume linear relationships between input features and the target variable. however, the data being analyzed, such as zomato dataset, likely involves complex, non-linear patterns, that’s the lr and lasso are unable to capture effectively. fig. 12(b) shows bar graph of mean absolute error in which dt and rf shows lowest value. apart of that, the actual vs predicted graph of lr, dt, rf, knn, gb, xgboost and lasso models are presented in fig. 13 (a) to (g) respectively. table 4 evaluated metric values for different ml algorithms algorithm name r-squared (accuracy %) mean absolute error model fit time (s) model prediction time (s) lr 63.51 199.2313 0.036169 0.006073 dt 97.71 22.89233 0.693119 0.010751 rf 97.86 27.00114 35.41616 0.645274 knn 81.31 90.36253 0.350173 0.161622 gb 79.63 138.4035 12.22126 0.038875 xgboost 89.48 107.3148 0.765353 0.034141 lasso 63.51 198.7871 0.033882 0.006374 6.1. hyperparameter impact on performance dt algorithm achieved a remarkable accuracy of 97.71%, which can be attributed to the careful selection of hyperparameters, such as a maximum tree depth of 15 and a minimum sample split of 4. these parameters allowed the model to efficiently capture feature interactions and handle complex data structures present in the zomato dataset. similarly, rf algorithm achieved the highest accuracy of 97.86%. the ensemble learning technique employed by this model, combined with optimal hyperparameters, such as 150 estimators and a maximum depth of 20, ensured superior predictive performance. rf ability to mitigate overfitting and identify influential features further contributed to its standout performance. on the other hand, simpler models like lr and lasso exhibited lower accuracies (63.51%) due to their inability to capture the non-linear relationships inherent in the data. these models rely on linear assumptions, which do not align well with the complex patterns typical of restaurant and customer data in platforms like zomato. the importance of hyperparameter tuning is further demonstrated by the knn model, which achieved an accuracy of 81.31% with an optimal neighbor value of 7. models like gb and xgboost achieved reasonably high accuracies of 79.63% and 89.48%, respectively, demonstrating the importance of parameters such as learning rate and depth for boosting models. machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 371 dt rf xgboost gb lr knn lasso 0 20 40 60 80 100 97.71 97.86 89.48 79.63 63.51 81.31 63.51 r -s q u a r e d ( % ) various algorithms (a) dt rf xgboost gb lr knn lasso 0 50 100 150 200 22.89 27 107.31 138.4 199.23 90.36 198.79 m a e various algorithms (b) fig. 12 bar graph of (a) r-squared or accuracy (%), (b) mean absolute error of ml algorithms 372 a. vaidhy, d. batham, r. jain, a. manjhwar (a) (b) (c) (d) (e) (f) machine learning-driven statistical analysis of indian restaurants: insights from zomato dataset 373 (g) fig. 13 actual vs predicted values for (a) linear regression, (b) decision tree, (c) random forest, (d) knn, (e) gradient boosting, (f) xgboost, (g) lasso 7. conclusion this research provides an in-depth analysis of the zomato dataset using eda and multiple ml algorithms. by evaluating various parameters such as restaurant types, price ranges, and ratings, the study highlights critical insights that can empower restaurant owners to take business decisions. the results demonstrate that dt and rf model significantly outperforms and achieved 97.71% and 97.86% accuracy, with minimum value of mae. these models are particularly effective in handling non-linear relationships and complex interactions, making them ideal for the diverse and intricate data of the restaurant industries. the findings emphasize the importance of leveraging ml algorithms for restaurant data analysis, as they can reveal hidden patterns, predict customer preferences, and help optimize pricing strategies and operational efficiency. this has potential to drive sustainable growth and improve profitability for restaurants. looking ahead, future research can explore the integration of deep learning techniques for more accurate predictions, incorporate real-time data for dynamic decision-making, and apply these models to other regions or global datasets for broader insights. additionally, incorporating customer sentiment analysis from social media and review platforms could provide a more comprehensive view of consumer behavior, further enhancing decision-making for restaurant stakeholders. references [1] j. n. bondevik, k. e. bennin, o. babur and c. ersch, "a systematic review on food recommender systems", expert syst. appl., vol. 238, p. 122166, 2024. [2] d. pandey and e. swati, "personalized dining experience: leveraging machine learning for menu recommendations in foodtech application", int. j. curr. sci., vol. 14, no. 2, pp. 32-38, 2024. [3] t. p. armand, k. a. nfor, j. i. kim and h. c. kim, "applications of artificial intelligence, machine learning, and deep learning in nutrition: a systematic review", nutrients, vol. 16, p. 1073, 2024. [4] s. s. nidhi and r. s. pandey, "predicting rating of online food chain", j. global res. comput. sci., vol. 14, no. 1, pp. 1-9, 2023. 374 a. vaidhy, d. batham, r. jain, a. manjhwar [5] v. khosla and s. srinivasan, "zomato co-founder pankaj chaddah quits as it shuffles top management", the economic times. last update: march 02, 2018, [online]. available at: https://economictimes.indiatimes. com/small-biz/startups/newsbuzz/zomato-co-founder-pankaj-chaddah-quits-as-it-shuffles-top-management/ articleshow/63129470.cms [6] n. choudhary, v. panwar, s. mittal and g. sahu, "zomato restaurants data analysis using machine learning algorithms", j. emerg. technol. innov. res., vol. 8, no. 2, pp. 1435-1441, 2021. [7] a. panigrahi, a. saha, a. shrinet, m. nauityal and v. gaur, "a case study on zomato-the online foodking of india", j. manag. res. anal., vol. 7, no. 1, pp. 25-33, 2020. [8] a. s. rao, b. v. vardhan and h. shaik, "role of exploratory data analysis in data science", in proceedings of the 6th international conference on communication and electronics systems (icces), coimbatore, india, 2021, pp. 1457-1461. [9] ibm, exploratory data analysis, [online]. available at: https://www.ibm.com/topics/exploratory-data-analysis [10] geekforgeeks, what is exploratory data analysis?, 16 may 2024, [online]. available at: https://www.geeksforgeeks.org/what-is-exploratory-data-analysis/ [11] ibm, linear regression, [online] available at: https://www.ibm.com/topics/linear-regression#:~:text= resources,what%20is%20linear%20regression%3f,is%20called%20the%20independent%20variable [12] the click reader, decision tree regression explained with implementation in python, medium, 19 oct. 2021, [online]. available at: https://medium.com/@theclickreader/decision-tree-regression-explainedwith-implementation-in-python-1e6e48aa7a47 [13] s. a. fitriani, y. astuti and i. r. wulandari, "least absolute shrinkage and selection operator (lasso) and k-nearest neighbors (k-nn) algorithm analysis based on feature selection for diamond price prediction", in proceedings of the international seminar on machine learning, optimization, and data science (ismode), jakarta, indonesia, 2022, pp. 135-139. [14] ibm, lasso regression, 18 january 2024, [online]. available at: https://www.ibm.com/topics/lasso-regression [15] shina, s. sharma and a. singla, "a study of tree-based machine learning techniques for restaurant reviews". in proceedings of the 4th international conference on computing communication and automation (iccca), greater noida, india, 2018, pp. 1-4. [16] a. kulkarni, d. bhandari and s. bhoite, "restaurants rating prediction using machine learning algorithms", int. j. comput. appl. technol. res., vol. 8, no. 9, pp. 375-378, 2019. [17] h. anwar, t. anwar and s. murtaza, "review on food quality assessment using machine learning and electronic nose system", biosens. bioelectron.: x, vol. 14, p. 100365, 2023. [18] y. guo, a. lu and z. wang, predicting restaurants’ rating and popularity based on yelp dataset, cs 229 machine learning final project. [19] s. k. naayak, m. beura, m. siddique and s. p. mishra, "analysis of indian food based on machine learning classification models", j. sci. res. rep., vol. 27, no. 7, pp. 1-7, 2021. [20] s. chaudhary, a. sharma and m. dhankar, "indian food recognition using cnn", int. j. res. publ. rev., vol. 5, no. 5, pp. 5092-5097, may 2024. [21] r. n. patil, y. p. singh, s. a. rawandale and s. singh, "improving sentiment classification on restaurant reviews using deep learning models", in proceedings of international conference on machine learning and engineering (icmlde 2023), procedia computer science, 2024, vol. 235, pp. 3246-3256. [22] b. shah, p. kanani, p. joshi, g. pandya, d. kulkarni, n. patil and l. kurup, "traditional indian food classification using shallow convolutional neural network", int. j. intell. syst. appl. eng., vol. 12, pp. 769-774, 2024. [23] r. agarwal, t. choudhury, n. j. ahuja and t. sarkar, "inidanfoodnet: detecting indian food items using deep learning", int. j. comput. methods exp. meas., vol. 11, no. 4, pp. 221-232, dec 2023. [24] s. somashekar and s. mallesh, "restaurant rating prediction using regression", in proceedings of the 5th international conference on electronics, communication and aerospace technology, coimbatore, india, 2021, pp. 1139-1144. [25] r. jain, v. v. thakare, and p. k. singhal, "enhancing circular microstrip patch antenna performance using machine learning models", fu: elec. energ., vol. 36, no. 4, pp. 589-600, 2023. [26] r. jain, v. v. thakare and p. k. singhal, "design and comparative analysis of thz antenna through machine learning for 6g connectivity", ieee lat. am. trans., vol. 22, no. 2, pp. 82-91, 2024. [27] r. jain, v. v. thakare and p. k. singhal, "employing machine learning models to predict return loss precisely in 5g antenna", prog. electromagn. res. m, vol. 118, pp. 151-161, 2023. [28] google, google colaboratory, [online]. avaliable at: colab.research.google.com. https://research.google.com/ colaboratory/ instruction facta universitatis series: electronics and energetics vol. 28, no 3, september 2015, pp. 423 437 doi: 10.2298/fuee1503423z investigation of the effect of additional electrons originating from the ultraviolet radiation on the nitrogen memory effect  emilija n. živanović university of niš, faculty of electronic engineering, niš, serbia abstract. the influence of ultraviolet radiation on memory effect in nitrogen has been investigated. the spectrum of the radiation which passes through the walls of the experimental sample was obtained by the spectrometer. a detailed comparison of experimental results of electrical breakdown time delay as a function of afterglow period with and without ultraviolet irradiation was performed. these studies were done for such product of gas pressure and inter-electrode distance when both breakdown initiation mechanisms exist. the research has shown that ultraviolet radiation leads to the decrease in ion concentration in early nitrogen afterglow due to recombination of nitrogen ions with electrons released from the tube walls and electrodes. meanwhile, it has been cofirmed that this radiation has a negligible influence on the breakdown initiation in late nitrogen afterglow when a significant nitogen atom concentration is persistent. when the concentration of nitrogen atoms decreases enough, the breakdown initiation is caused by cosmic rays but uv photons have an important influence because of the rise of the electron yield. key words: memory effect, electrical time delay, nitrogen, ultraviolet radiation 1. introduction the electrical breakdown time delay in gases is one of the most important characteristics of gas components, which is also known as the delay response. it is defined as a time interval from applying voltage, sufficient enough to initiate the electrical breakdown. furthermore, the investigation of electrical breakdown time delay can provide useful information about the physical processes that occur in the gas during the operation of electrical devices. the investigation of electrical breakdown time delay in gas could be performed as a function of different parameters 1, 2. one of the most important parameters that influences on the mean value of electrical breakdown time delay dt is the afterglow period . the dependence )(ftd  is usually known as memory curve. it has been used for qualitative and quantitative analysis of concentrations of positive ions and neutral active received july 18, 2014; received in revised form march 5, 2015 corresponding author: emilija živanović university of niš, faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš (e-mail: emilija.zivanovic@elfak.ni.ac.rs) 424 e. n. živanović states remaining from the previous discharge as well as formed during the afterglow period [3], [4]. it has also enabled the estimation of recombination and de-excitation times of the mentioned particles due to their recombination on the tube walls, electrodes and in gas. the particles that come to the cathode play the main role in the initiation of the subsequent breakdown. they induce the secondary electron emission, and if the voltage applied on the electrodes is higher than the static breakdown voltage, secondary electrons created at the cathode can initiate the subsequent breakdown. the previous study showed that auger neutralization process, in which positive ions participate, as well as auger de-excitation process for which the molecule metastable state are responsible, play a dominant role in the breakdown initiation in gases at low pressure. especially in nitrogen, the process of surface catalysed excitation could also be responsible for the breakdown initiation. many parameters affect the behavior of the memory curve at low pressures. some of them are the inter-electrode distance, the material of cathode and tube's walls, the wall's temperature, the applied voltage on the gas tube, the glow current and the glow time. most of these investigations have already been published. however, the influence of additional electrons which originate from ultraviolet irradiation on the nitrogen memory effect when the product of gas pressure p and the inter-electrode distance d are placed on the left side of paschen's minimum (the dependence of the static breakdown voltage as a function of the pd product) has not been sufficiently investigated. practical importance of investigation of this irradiation influence on the discharge in gas-filled electronic components as well as solid system, it could be found in many published papers [5-9]. for this purpose, the aim of this paper is to examine the effect of ultraviolet radiation that comes from the cadmium lamp on the nitrogen memory effect in the presence of vacuum and gas breakdown mechanisms. as for each of the areas of the memory curve depending on the afterglow period length, a different mechanism initiating breakdown is responsible, the influence of ultraviolet radiation for each of them has been individually investigated. 2. experiment 2.1. experimental sample the cylindrical borosilicate glass (8245 schott technical glass) tube filled with nitrogen at 6.6 mbar pressure was used as experimental sample and it is shown in fig. 1. its volume was about 1 l. it was connected in the circuit with one fixed and one movable iron electrode, so that the inter-electrode distance could be varied by a permanent magnet from the outside. using this experimental sample allows changing the inter-electrode distance from 0.01 cm to 0.45 cm, while the value of the gas pressure in the tube remains constant. the diameter of spherical electrodes was 1 cm. fig. 1 the shape of used experimental samle (1fixed electrode, 2movable electrode, 3rotation shaft from iron) investigation of the effect of additional electrons originating from the ultraviolet radiation... 425 the tube had to be baked out and evacuated before the nitrogen was admitted in a process similar to that for the production of x-ray and the other electron tubes. after that, the tube was filled with matheson research grade nitrogen at pressure of 6.6 mbar with the claimed abdundance of impurities such as co<0.5 ppm, co2<0.5 ppm, o2<1 ppm, thc<0.2 ppm and h2o<1 ppm. before the time delay measurements were done, the cathode sputtering with glow current of 0.5 ma was set with duration of a few days. such value of discharge current was selected to avoid erosion of the cathode during conditioning. due to the stohastic nature of electrical time delay, each point in memory curves represents the mean value of a hundred measured values. after the breakdown, the current in the tube was 0.5 ma during a glow time of 1 s. this time is sufficient to attain the steady-state discharge conditions in our experiment. it should be noted that the similar experiments were performed by other group of scientists [10] and [11] in which the glow time was the order of milliseconds. the gas sample used in these experiments has the cathode made of gold-plated copper. but, it could be emphasized that the gold provides a relatively stable work function. the estimated values of static breakdown voltage us for this experimental sample for two values of inter-electrode distance of 0.01 cm and 0.1 cm were 418 v and 386 v, respectively. the electrical breakdown time delay measurements were performed for overvoltage %50)(  ssws uuuuu higher than static breakdown voltage, where uw is voltage applied on the tube electrodes. 2.2. experimental setup electrical breakdown time delay measurements were performed with an electronic system, whose block diagram is shown in fig. 2. the used electrical system, from the architecture point of view, consists of three major parts. those are high voltage power supply, analog subsystem and digital subsystem. for high voltage power supply it is necessary to operate in the range from 100 to 1000 volts within the desired power raring. fig. 2 block diagram of system for electrical breakdown time delay measurement the measured electrical breakdown time delay values can range from several microseconds to several minutes, while the values of afterglow period set by the system can range from couple of microseconds to several days. due to the statistical nature of time delay, it is necessary to perform a large number of measurements since the measurement error of time delay mean values decreases as n/1 , where n is the total number of measurements. the number of measurements in this experiment was a hundred for only one value of the afterglow period. since the measurement cycle can be set up for 426 e. n. živanović an arbitrary number of different afterglow period values, it can be concluded that the total number of measured timed delay values per experiment can be extremely large. such large number of data should be stored somewhere in real time and kept for further statistical analysis which the digital subsystem enables. the used electrical system allowed obtaining the dependence of the mean value of electrical time delay vs. afterglow period, )(ftd  on two different values of interelectrode distance, with and without the presence of uv radiation. before discussing the processes that predominantly affect the secondary electron emission process during the afterglow, it is necessary to highlight the progress that was made in measuring the electrical time delay using the improved measurement system. what this system enables is a significant reduction in the value of the afterglow period duration for which electrical breakdown time delay could be measured. hence, the lowest value of the afterglow period value for which the measurement of electrical breakdown time delay was possible was 3 μs. thus, the value of afterglow period for which it was possible to measure electrical breakdown time delay was reduced by three orders magnitude using the improved system, which allowed tracking the decrease in the concentration of the charged and neutral active particles that were passed from the discharge into the afterglow period. further, this system has enabled sufficiently reliable monitoring the recombination/deexcitation of positive ions and neutral active particles formed during and after discharge based on the process of secondary electron emission which they initiate. the detailed development of the electrical system used to measure the electrical time delay and its electrical scheme could be traced in [12]. 2.3. investigation of ultraviolet irradiation as a source of ultraviolet radiation the commercial cadmium lamp was used. before recording memory curves, spectral analysis of the light that comes from the lamp, which goes through the glass tube walls, was performed. a piece of borosilicate glass was placed between the cadmium lamp and the spectrometer in order to ascertain which wavelengths could pass through the gas-filled tube walls. this enabled measuring the light intensity influence in this process. the instrument used in spectroscopic analysis was avantes spectrometer avaspec-3648 [13] which has a useable range from 200 nm to 850 nm. the spectrometer has a diffraction grating with 600 lines/mm and the slit size is 10 µm, making the lowest resolution between two near lines 0.32 nm. as can be seen, the most intense lines in the spectrum are wavelengths 327 nm, 480 nm and 509 nm. the obtained emission spectrum is shown in fig. 2, and as it can be seen, the wavelengths larger than 327 nm can pass through the glass walls. the physical process that occurs when ultraviolet light from the cadmium lamp falls on the cathode surface is the photoelectric effect. specifically, based on einstein's relation for the photoelectric effect provided that freed electrons do not experience collisions inside the metal, or if the photons are delivered energy electrons at the cathode surface, the energy of the incident photons will be equal to the sum of the work function cathode material and the maximum kinetic energy of the released electrons. investigation of the effect of additional electrons originating from the ultraviolet radiation... 427 fig. 3 strongest observed lines in the emission spectrum of the cadmium lamp which pass through the borosilicate glass therefore, comparing the value of energy corresponding to the wavelength the spectrum resulting lines with a value of the iron work function, the existence of photoelectric effect could be determined [14]. to make it possible, the photon energy from the lamp needs to be greater or equal to the value of the work function of iron, of which the electrodes are made. in the literature, there are inconsistencies in the value of the work function of iron, according to the different authors, varying from 3.5 ev [15] to 4.3 ev [16]. it can be asked how the secondary electrons can be emitted from the cadmium lamp since the work function of iron is slightly greater than the photon energy of the smallest wavelength of the spectrum. it should be noted that the iron electrodes are coated by a layer of iron oxide, which has smaller work function than the iron 15. earlier qualitative energy dispersive spectroscopy analysis of the electrode surface confirmed the iron oxide layer stability, and that it cannot be removed by sputtering during the discharges. because of that, from the spectrum of cadmium lamp lines 327 nm, 341 nm, 346 nm and 360 nm should be taken into account, with corresponding energies 3.79 ev, 3.64 ev, 3.59 ev and 3.45 ev. 3. results and discussion the experimental results presented in this paper are the follow-up of the recent research presented in 17. in investigation whose results are presented below, the interelectrode distance was taken as a parameter in tracking the behaviour of the memory curve. in this case the research was done in the persence of ultraviolet radiation. the analysis of the influence of additional electrons originating from commercial cadmium lamp has been performed. the memory curves present in figs. 4 and 5 are obtained for nitrogen-filled tube, with and without source of ultraviolet radiation for two different values of inter-electrode distance of 0.01 cm and 0.1 cm, respectively. the analysis of the obtained results enables a discussion of the ultraviolet radiation influence as well as the inter-electrode distance to the memory curve behavior. a type of breakdown initiation mechanism also has an influence on the memory curve behavior. 428 e. n. živanović fig. 4 memory curves with and without presence of radiation from cadmium lamp for inter-electrode distance of 0.01 cm fig. 5 memory curves with and without presence of radiation from cadmium lamp for inter-electrode distance of 0.1 cm 3.1. nitrogen memory effect a special mechanism of breakdown initiation occurs at low pressure values when the inter-electrode distance is less than the electron mean free path (pd  10 3 mbar cm [18]). under these conditions the breakdown appears in the so called technical vacuum and it is caused by the existence of an avalanche mechanism which creates free electron and ions. in this case, the breakdown starts in the processes at the electrode, but is significantly investigation of the effect of additional electrons originating from the ultraviolet radiation... 429 different than γ processes of townsend's mechanism. there are several ways of the vacuum breakdown initiation, but all are common to evaporation of the electrode material forms a vapor cloud which is still developing breakdown with townsend's avalanche mechanism [19]. in order to form a cloud of vapor, it is necessary that the electrodes' surface has a large number of micro-spices which should cause a sufficient amount of energy to cause thermal instability. thermal instability of electrodes could be caused by emission mechanism, by micro-particles accelerated in electrode material, or through the avalanche effect in the adsorbed residual gas layer on the electrode. it can be induced in three ways: the emission mechanism (autoelectron emissions), accelerated micro-particles from electrode materials or avalanche effect in the gas adsorbed layer on the electrode surface. as a criterion of whether it is a technical vacuum or not, the dependence us = f (pd) was monitored for the gas sample used in this experiment, which was published in [17]. the product value of inter-electrode distance 0.01 cm and nitrogen pressure in the tube of 6.6 mbar lies to the left of the paschen's curve minimum. it corresponds to the most favorable conditions for the gas ionization. in this case it was not pure vacuum breakdown mechanism existence, but for this the value of pd product the combined effect of vacuum and gas breakdown mechanism exists. the presence of vacuum breakdown mechanism leads to the existence of additional electrons in the inter-electrode gap which are otherwise responsible for the secondary electron emission in the plateau region of memory curve. it is known that the memory curve of nitrogen has three areas 1 which are caused by the existence of different mechanisms responsible for the electrical breakdown initiation in the gas. using an advanced system for measuring the time delay allows a detailed analysis of the plateau area of the memory curve (short-lived afterglow) which has been done on this occasion. namely, if the positive ions are present in the gas, their movement towards the cathode is enabled by connecting a voltage to the electrode tubes, where they eject electrons that initiate electrical breakdown in the process of secondary electron emission. the positive ions could be transferred from the discharge to the short-lived afterglow, but they persist in gas to 10 ms. the discussion in the paper [20] showed that the minimum emissions of 1 system occurred 1-10 ms after the discharge had ceased. on the other hand, the positive ions could be formed during the actual relaxation in the metastable molecule reactions )or()()( 22422 ennenanan   , (r1) )or()()( 22422 ennenanan   , (r2) with the rate coefficient values of 3.2·10 -12 cm 3 s -1 [21] and 5·10 -11 cm 3 s -1 [22]. n2(a) and n2(a') metastable molecules formed in the discharge recombined 1-10 ms after the discharge had ceased [23], [24], so that the number of the reactions (r1) and (r2) decreased with time up to 10 ms. also, if the electrons are present in the gas, the positive ions could be formed by electron impact on the nitrogen molecules, as well. the electrons in the gas could be found up to 1 ms after the discharge ceased [25]. if a voltage is applied to the electrodes after the relaxation which lasted   1 ms the electrons would perform ionizing collisions and thus encourage the process of secondary electron emission. since the mechanism of positive ion creation during the (r1) and (r2) reactions dominates over the electron impact even during the discharge [22], it can be concluded that the same will happen outside the discharge, and the contribution of the process of the secondary electron emission during the afterglow can be neglected. 430 e. n. živanović the calculations of the vibrational temperature during the discharge showed that the concentration of excited vibrational levels 10v had a value of 0.1% concentration of nitrogen molecules in the ground state [4]. a similar trend is predicted if the discharge current is low, which corresponds to the conditions of our measurements. therefore, it can be concluded that immediately after the completion of the discharge, the concentration of the vibrational-excited nitrogen molecules ( 10v ) is high, and the reactions of positive ions creation are possible [26]: ,)()24,( 422 enanvxn   (r3) ,)29,()29,( 422 envxnvxn   (r4) enanvxn   422 )()36,( . (r5) after   10 ms the emission intensity of 1 system increases. this intensity passes through a maximum value in the interval of 15-20 ms [20]. this maximum results from the growth of the positive ion concentration during the short-lived afterglow. from the aforementioned facts it can be seen that in this range the concentration of n2(a) and n2(a') metastable molecules pass through the maximum, which leads to, due to the higher probability of the reactions (r1) and (r2), the increase of the positive ion concentration. however, considering the fact that after 10 ms the positive ions and metastable molecules from the discharge recombine or become de-excited, it can be concluded that the other particles present in the gas are involved in the creation of the positive ions. it is believed that the formation of n2(a) and n2(a') metastable molecules in the shortlived afterglow for the relaxation time ms10 follows from the reactions ,)()()39,()( 2 2 2 4 andnvxnsn  (r6) ,)'()()38,()( 2 4 2 4 ansnvxnsn  (r7) involving n( 4 s) atoms and the highly vibrational-excited nitrogen molecules [26]. n( 4 s) atoms retain 1% of the nitrogen molecule concentration after the discharge period up to   10 ms  1 s [27], which is more than other particles in the gas do. as for the highly vibrational excited nitrogen molecules, the population availability of the highly vibrational excited levels increases during the short-lived afterglow due to the "pumping up" effect. the calculations of other authors [27] have shown that the concentration of n2 (x, v > 25) molecules has the maximum value for the afterglow period in order of tens of milliseconds. this maximum coincides with the maximum of the 1 system emission, so it can be concluded that, in the interval of 10-15 ms, the efficiency of the (r6) and (r7) reactions is the largest in the short-lived afterglow. this leads to an increase in the concentration of n2(a) and n2(a') metastable molecules, which, by participating in the reactions (r3)-(r5), cause the increase of the positive ion concentration. the concentration of highly vibrational excited nitrogen molecules n2 (x, v > 25) rapidly decreases after reaching the maximum, and the relaxation times of the order of 100 ms is already about 50% lower than the maximum, whereas for   1 s it is negligible [27]. this decrease significantly reduces the probability of positive ion creation in the previously mentioned processes, so their significance in the process of secondary electron emission is smaller for the relaxation time  > 30 ms. investigation of the effect of additional electrons originating from the ultraviolet radiation... 431 bearing in mind the aforementioned discussion, the 3 s <  < 70 ms interval in figs. 4 and 5, which represents an area of the short-lived afterglow (particularly in figs. 6 and 7) is investigated in detail. a slightly larger increase in the electrical breakdown time delay value in the 3 s <  < 1 ms interval is caused by the decrease of the positive ion concentration and n2(a) and n2(a') metastable molecules being transferred from the discharge to the short-lived afterglow. in this interval, the secondary electron emission is dominated by the positive ions that are either transferred from the discharge or afterglow through reactions of n2(a) and n2(a') metastable molecules and highly vibrational excited nitrogen molecules, also transferred from the discharge. since in the 3 s <  < 1 ms interval positive ion concentration is the largest for all afterglow periods for which the measurements are performed, the efficiency of the secondary electron emission is the largest in this interval. it is characterized by the lowest values of electrical breakdown time delay on the memory curve of figs. 4 and 5. the end of the interval 3 s <  < 1 ms coincides with the minimum intensity of 1 system emission in the short-lived afterglow, when most of the positive ions are recombined and the majority of the de-excited electrons and n2(a) and n2(a') metastable molecules are transferred from the discharge. in the next part of the short-lived afterglow (1 ms <  < 70 ms), the positive ions are also responsible for the secondary electron emission, but almost entirely those incurred during the actual relaxation. at the beginning of this interval the levels' concentration of the highlyvibrational excited nitrogen molecules reaches a maximum, and then the efficiency of the (r6) and (r7) reactions, in which n2(a) and n2(a') metastable molecules are formed, is the highest. these molecules, in their mutual interaction in reactions (r1) and (r2) as well as in reactions with nitrogen highly vibrational excited molecules (reactions r3-r5), cause the increase of the positive ion concentration and enhance the secondary electron emission. the renewed increase in the positive ion concentration caused in such a way is represented on the memory curve of figs. 4 and 5 by a significantly slower increase in the td value during the interval 1 ms <  < 70 ms than during the interval 3 s <  < 1 ms. there is a further increase in the electrical breakdown time delay value due to the fact that having reached the maximum during  = 10  15 ms, the concentration of the highly excited vibrational molecules of nitrogen begins to decline. this, over time, leads to the reduction of the efficiency of the reactions which produce the positive ions. at the end of the 1 ms <  < 70 ms area, the concentration of the positive ions decreases to a level at which the probability of the secondary electron emission process of their impact upon the cathode becomes very low and then this process begins to dominate neutral active particles. since the efficiency of these particles in the secondary electron emission is significantly lower than the efficiency of the positive ions, there is a sudden increase in the value of td for  > 70 ms. at the same time, the value   70 ms is the end of the area of the short-lived afterglow time in figs. 4 and 5. most reactions of nitrogen positive ions creation, both by electron impact ionization of neutral molecules, during breakdown and discharge by associative ionization processes, involve metastable molecules and highly vibrationally excited molecules were listed in papers 28. it could be seen that n ,  2n ,  3n ,  4n ions have a certain role in the process of secondary electron emission from the cathode in early afterglow. taking into account the published data 28, the concentration of  2n ions is 310 cm105  after discharge ceases, while the concentrations of the other ions are significantly lower. for 432 e. n. živanović this reason, it can be proposed that  2n ions formed in processes (r1) and (r2) have a dominant role in the breakdown initiation in the early afterglow. the drift velocity of these ions can be estimated by expression dvmuev jwd  [29], where the mean free path is calculated as pdkt 22  (k is the boltzmann constant, t = 300 k is gas temperature, d is the ion diameter and p is gas pressure), uw is applied voltage on the electrodes, mj is the ion mass, d is the inter-electrode distance, e is the elementary charge and v is the mean thermal velocity estimated as jmktv 2 . for nitrogen-filled discharge tube at 6.6 mbar pressure, for present experimental condition, the mean free path is 1.4710 -5 m and the mean thermal velocity is 421.73 ms -1 , while the value of the drift velocity for overvoltage of 50% is 6.910 4 ms -1 . it can be concluded that the drift velocity is higher than the thermal velocity. for these afterglow periods the electrical breakdown time delay is only determined by total time necessary for the ion drift to the cathode and the secondary electron release from its surface. in the case when the drift velocity is lower than the thermal velocity, it is emphasized that the positive ions also play the most important role in the process of secondary electron emission because of their drift motion toward the cathode under the field influence in the inter-electrode gap. not only the positive ions but the metastable molecules and other neutral active particles as well can cause the secondary electron emission at the cathode. however, when a voltage is applied to the electrode, the diffusion time of these particles to the cathode is considerably longer than the drift of the positive ions, so their direct contribution to this process is negligible provided that the positive ions are present in the gas. the rapid growth of the electrical breakdown time delay value at the end of shortlived afterglow indicates a change in the mechanism that dominates in the process of secondary electron emission. after  = 15 ms, the concentration of n2(a) and n2(a') metastable molecules and high vibrational excited molecules of nitrogen decreases, consequently the number of positive ions formed the above-mentioned reactions became lower. because of that, when the concentration of positive ions becomes lower than the concentration of neutral particles in a gas, which can also cause secondary electron emissions, the form of memory curves change, entering the region of rapid electrical breakdown time delay increase, so-called long-lived afterglow. the efficiency of neutral active particles in causing the process of secondary electron emission is much smaller than in the case of positive ions, causing the value of td rapidly increased in relation to the plateau memory curve. earlier investigations [1], [3], [24], [30] confirmed that the nitrogen atoms in ground state n( 4 s) remaining from the previous discharge as well as formed after the discharge ceased are the most responsible particle for the secondary electron emission from the cathode in late nitrogen afterglow. numerical models, which followed the decrease of nitrogen atoms concentration based on the re-association on the tube walls [3], [4], [24] combined with a model predicts that secondary electron emission is caused by nitrogen atoms, showed a good agreement with the experimental obtained memory curves in the area of sudden increase in td value. the decrease of n atoms concentration is inversely proportional to the probability of the secondary electron emission, indicating the td value increases. since their concentration decreases exponentially [4], as well as the decline of the light emitted from the tube after discharge, this downward trend in log scale is shown linearly. investigation of the effect of additional electrons originating from the ultraviolet radiation... 433 it has been shown earlier [31], [32] that the long-lived lewis-rayleigh afterglow lasts up to several hours and it can also been confirmed that the source of the energy for the glow is the recombination of the nitrogen atoms in the ground state. it was concluded that n( 4 s) atoms are present a very long time in the afterglow and their concentration deceases mostly by surface recombination on the tube walls [3]. in addition, they could be also recombined in the gas and on the electrodes. the final product of their recombination is n2(a) metastable state. it can be reach via the following reactions: mbnmsnsn  )()()( 2 44 , (r8) where m is the atom at the cathode surface, and by the spontaneous de-excitation process of n2(b) molecules, hanbn  )()( 22 . (r9) n2(a) metastable state formed in this way [33], transferring the energy to the cathode via the collision. as the work function of iron, is lower than the n2(a) metastable state energy of 6.2 ev, it can induce the secondary electron emission that determines the value of the electrical breakdown time delay in the late nitrogen afterglow. this process of nitrogen atom recombination on cathode surface is the surface-catalyzed excitation [34]. this is the process of heterogeneous catalysis which is significant for this research, when the adsorbate and the substrate are in different phases, i.e. in gaseous and solid. in order to achieve heterogeneous catalysis, at least one of the reactants needs to be adsorbed and modified into the shape that has got a high affinity for the reactions. and on that way the secondary electrons are produced for breakdown initiation in the late afterglow. for   3·10 3 s and   7·10 3 s the memory curves without presence of additional radiation from figs. 4 and 5 reach the saturation for the inter-electrode distance of 0.01 cm and 0.1 cm, respectively, i.e. the mean value of the time delay slightly changes with the afterglow time increase. it should be emphasized that in the saturation district of memory curves, the concentration of nitrogen atoms decreases to so low value that the cosmic ray becomes responsible for the breakdown initiation. when the applied voltage on the tube is higher than the static breakdown voltage, the electron-ion pairs form in gas and they could initiate the breakdown. then, it is highly probable that electrons are released from the cathode due to the impact of cosmic radiation. they form the avalanche which leads to the breakdown causing the electrical time delay decrease. since the flux of cosmic ray during the experiment was approximately constant, the number of the electron-ion pairs created in unit time is approximately constant and the electron yield is also approximately constant. because of that, the mean value of time delay is constant for the given value of overvoltage. these conclusions are in agreement with the results shown in figs. 4 and 5. it is important to emphasize that the cosmic ray permanent exists during the experiment. but, for shorter afterglow period when the positive ions and the considerable concentration of n( 4 s) atoms are present, the role of the cosmic ray in the breakdown initiation is negligible in relation to the secondary electron emission initiated with these particles. 3.2. influence of ultraviolet radiation the analysis of the obtained experimental results also enables a discussion of the ultraviolet irradiation influence to the memory effect in nitrogen at 6.6 mbar pressure when the combined 434 e. n. živanović vacuum and gas breakdown initiation mechanism exist. it is clearly observed from figs. 4 and 5 that ultraviolet radiation, which comes from the lamp, has influence on the electrical breakdown time delay. in some regions of the memory curve the impact is slight, but noticeable. in the area of rapid growth of the mean value of electrical breakdown time delay, the influence of ultraviolet radiation is negligible. the obtained values of dt were slightly less. the presence of additional electrons from uv irradiation causes the memory curves to reach the saturation earlier and they decrease the dt values for about the order of magnitude. it should also be noted that some influence of ultraviolet radiation is felt in the plateau area of the memory curve. because of that, this part of memory curve has been specially presented in figs. 6 and 7 for both values of inter-electrode distance. fig. 6 ion part of memory curves with and without presence of radiation from cadmium lamp for inter-electrode distance of 0.01 cm fig. 7 ion part of memory curves with and without presence of radiation from cadmium lamp for inter-electrode distance of 0.1 cm investigation of the effect of additional electrons originating from the ultraviolet radiation... 435 it can be seen from these figures that the plateau length is not changed due to the ultraviolet irradiation. however, for both values of inter-electrode distance the plateau height increases. this increase is caused by the electron yield growth in the interelectrode gap due to the liberated electrons from the cathode by ultraviolet irradiation, which was more pronounced in the presence combined vacuum and gas breakdown. in this case, it should be noted that for further electron yield growth, the presence of the vacuum breakdown mechanism is responsible. these additional electrons induce the process of recombination the part of positive ions formed immediately after the finish of the discharge until the end of the plateau. meanwhile, these ion-electron recombinations proceed through the following processes: ),()( 224 xnxnne   (r10) ),()( 44 2 snsnne   (r11) ).()( 24 2 dnsnne   (r12) the rate coefficients of these reactions are 2  10 6 (300/te) 0.5 cm 3 s 1 for (r10) and 2  10 7 (300/te) 0.5 cm 3 s 1 for processes (r11) and (r12) [35]. as a result, when an operating voltage is applied on the electrodes, fewer ions per second arrive to the cathode surface when the gas tube is irradiated. then, the breakdown probability of electron occurrence decreases, causing a rise in the mean value of electrical breakdown time delay. 4. conclusion on the basis of the above considerations, the following brief conclusion is given. fundamental research of nitrogen discharge and afterglow is very important because of their different applications. the investigation of influence of ultraviolet irradiation on memory curve behavior has also been published. this effect is a consequence of the production of electrons from the cathode by light from the cadmium lamp. the spectral analysis of the light that comes from the lamp, which goes through the glass tube walls, was performed using avantes spectrometer avaspec-3648. it was obtained that ultraviolet irradiation had a noticeable influence in the plateau region and saturation of the memory curve, while a deviation of time delay is insignificant in the region of its rapid increase. namely, in early nitrogen afterglow ultraviolet irradiation increases the values of time delay, due to the dominant effect of ions enhanced electron-ion recombination. otherwise, in far late nitrogen afterglow the ultraviolet radiation decreases the time delay values because of the growth in total electron yield. the obtained results have shown that the memory curves in the region of very long afterglow period values are very sensitive to ultraviolet radiation. because of that, a strict control of enviromental radiation during the measurement was necessary to be performed in order to reduce the errors in tracking the kinetics of positive ions and neutral active particles in nitrogen afterglow. the most important process related to positive ions and nitrogen atoms creation/quench are mentioned. in addition, it was represented that the additional electron yield caused by influence of vacuum breakdown initiation mechanism has also a dominant role and that it was responsible for the decrease of dt value. this phenomenon is more pronounced in the presence of the vacuum breakdown mechanism at the lower value of inter-electrode gap. 436 e. n. živanović the ability to detect weak effects of ultraviolet radiation on the memory effect has reaffirmed that the used time delay measurement technique is very sensitive to the change of particle concentration in gas. earlier, it was found [3] that the used method could detect nitrogen atom concentration nearly 10 8 cm -3 . it was determined by the level of a natural charge production between the electrodes. acknowledgement: this work has been supported by the ministry of education, science and technological development of republic of serbia under the contract no. 177007. references [1] m. m. pejović, e. n. živanović and m. m. pejović, "kinetics of ions and neutral active states in afterglow and their influence on the memory effect in nitrogen at low pressures", j. phys. d: appl. phys., vol. 37, pp. 200-210, 2004. [2] n. t. nesić, m. m. pejović, m. m. pejović and e. n. živanović, "the influence of additional electrons on memory effect in nitrogen at low pressures", j. phys. d: appl. phys., vol. 44, p. 095203(9pp), 2011. [3] v. lj. marković, z. lj. petrović and m. m. pejović, "surface recombination of atoms in a nitrogen afterglow", j. chem. phys., vol. 100, pp. 8514-8521, 1994. [4] n. nešić, g. ristić, j. karamarković and m. m. pejović, "modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures 6.6 and 13.3 mbar in the increase region of the memory curve", j. phys. d: appl. phys., vol. 41, p.225205, 2008. [5] k. bergmann, g. schriever, o. rosier, m. müller, w. neff, and r. lebert, "highly repetitive, extremeultraviolet radiation source based on a gas-discharge plasma", applied optics, vol. 38, pp. 5413-5417, 1999. [6] j. g. kim, h. j. cho, s. k. park, s. h. lee, b. g. choi, j. y. an, y. i. cheon, y. h. jeon, t. ishigaki, k. kang and w. s. yoo, "investigation of unexpected residual effects of ultraviolet based measurements of sio2/si interface by photoluminescence", ecs solid state lett., vol. 3, pp. n11-n14, 2014. [7] n. philip, b. n. saoudi, m. c. crevier, m. moisan, j. barbeau, j. pelletier, "the respective roles of uv photons and oxygen atoms in plasma sterilization at reduced gas pressure: the case of n2-o2 mixtures", ieee trans. on plasma sci., vol. 30, pp. 1429-1436, 2002. [8] a. m. anpilov, e. m. barkhudarov, yu b. bark, yu v. zadiraka, m. christofi, yu n. kozlov, i. a. kossyi, v. a. kop'ev, v. p. silakov, m. i. taktakishvili and s. m. temchin, "electric discharge in water as a source of uv radiation, ozone and hydrogen peroxide", j. phys. d: appl. phys., vol. 34, pp. 993-999, 2001. [9] xin miao zhao, j. c. diels, cai yi wang, j. m. elizondo, "femtosecond ultraviolet laser pulse induced lightning discharges in gases", ieee journal of quantum electronics, vol. 31, pp. 599-612, 2002. [10] a. v. phelps, z. lj. petrović and b. m. jelenković, "oscillation of low-current electrical discharges between parallel-plane electrodes. iii. models", physical review e, vol. 47, pp. 2825-2838, 1993. [11] z. lj. petrović and a. v. phelps, "temporal and constriction behavior of low-pressure, cathodedominate argon discharges", physical review e, vol. 56, pp. 5920-5931, 1997. [12] m. m. pejović and m. m. pejović, electrical breakdown of gases: measuring systems and experimental research, university of niš: faculty of electronic engineering, 2009, in serbian. [13] avantes spectrometer avaspec 3648, datasheet. [on line]. available at http://www.wacolab.com/avantes/ spectrometers14.pdf. [14] y. smirnov and n. yudin, nuklear physics, moscow: nauka, 1980. [15] v. s. fomenko, emissionny svoystva materialov, spravochnik, kiev: naukova dumka, 1970, in russian. [16] n. a. ashcroft and n. d. mermin, solid state physics, new york: holt, riehart and winston, 1976. [17] e. n. živanović, "influence of combined gas and vacuum breakdown mechanisms on memory effect in nitrogen", vacuum, vol. 107, pp. 62-67, 2014. [18] j. m. meek and j. d. craggs, electrical breakdown of gases, new york: john wiley and sons inc., 1978. [19] a. pedersen, "on the electrical breakdown of gaseous dielectrics-an engineering approach", ieee trans. electr. insul., vol. 24, pp. 721-739, 1989. [20] d. blois, p. suppiot, m. bary, a. chapput, c. foissac, o. dessaux and p. goudmand, "the microwave source's influence on the vibrational energy carried by n2(x) in a nitrogen afterglow", j. phys. d: appl. phys., vol. 31, pp. 2521-2531, 1998. http://ssl.ecsdl.org/search?author1=jung+geun+kim&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=ho+jin+cho&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=sung+ki+park&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=seok-hee+lee&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=byoung+gon+choi&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=jea+young+an&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=young+il+cheon&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=young+ho+jeon&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=toshikazu+ishigaki&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=kitaek+kang&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=kitaek+kang&sortspec=date&submit=submit http://ssl.ecsdl.org/search?author1=woo+sik+yoo&sortspec=date&submit=submit http://www.wacolab.com/avantes/spectrometers14.pdf http://www.wacolab.com/avantes/spectrometers14.pdf investigation of the effect of additional electrons originating from the ultraviolet radiation... 437 [21] b. f. gordiets, c. m. ferreira, m. j. pinheiro and a. ricard, "self-consistent kinetic model of low-pressure n2h2 flowing discharges: ii. surface processes and densities of n, h, nh3 species", plasma sources sci. technol., vol. 7, pp. 363-378, 1998. [22] b. f. gordiets, c. m. ferreira, v. guerra, j. loureiro, j. nahorny, d. pagnon, m. touzeau and m. vialle, "kinetic model of a low pressure n2-o2 flowing discharge", ieee trans. plasma sci., vol. 23, pp. 750-68, 1995. [23] e. eslami, c. foissac, a. camparague, p. supiot and n. sadeghi, "vibrational and rotational distributions in n2(a) metastable plasma", in proceedings of the xvi europhysics conference on atomic and molecular physics of ionized gases (escampig) 5th international conference on reactive plasmas (icrp) join meeting, grenoble, france 2002, european physical society, vol.1, p.57. [24] v. guerra, p. sa and j. loureiro, "kinetic modeling of low pressure nitrogen discharge of the postdischarge", eur. j. appl phys., vol. 28, pp. 125-152, 2004. [25] p. supiot, o. dessaux and p. goudmand, "spectroscopic analysis of the nitrogen short-lived afterglow induced at 433 mhz," j. phys. d: appl. phys., vol. 28, pp. 1826-1839, 1995. [26] a. a. matveyev and v. p. silakov, "theoretical study of the role of ultra-violet radiation of the nonequilibrium plasma in the dynamics of the microwave discharge in molecular nitrogen", plasma sources sci. technol., vol. 8, pp. 162-178, 1999. [27] p. sa, v. guerra, j. loureiro and n. sadeghi, "self-consistent kinetic model of short-lived afterglow in flowing nitrogen", j. phys. d: appl. phys., vol.37, pp. 221-231, 2004. [28] j. levaton, j. amorim, souza, d. franco and a. ricard, "kinetics of atoms, metastable, radiative and ionic species in the nitrogen pink afterglow", j. phys. d: appl. phys., vol. 35, pp. 689-699, 2002. [29] von engel a, ionized gases, oxford: clarendon, 1965. [30] z. lj. petrović, v. lj. marković, m. m. pejović and s. r. gocić, "memory effects in the afterglow: open questions on long-lived species and the role of surface processes", j. phys. d: appl. phys., vol. 34, pp. 1756-1768, 2001. [31] w. brennen and e. c. shane, "the nitrogen afterglow and the rate of recombination of nitrogen atoms in the presence of nitrogen, argon and helium", j. phys. chem., vol. 75, p. 1552, 1971. [32] j. berkowitz, w. a. chupka and g. b. kistiakowsky, "mass spectrometric study of the kinetics of nitrogen afterglow", j. chem. phys., vol. 25, p. 457, 1956. [33] g. cernogora, c. m. ferreira, l. hochard, m. touzeau and j. loureiro, "vibrational populations of n2(a 3u +) in a pure nitrogen glow discharge", j. phys. b: at. mol. phys., vol. 17, pp. 4429-4437, 1984. [34] g. g. manella, r. r. reeves and p. harteck, "surface catalyzed excitation with n and o", j. chem. phys., vol. 33, p. 636, 1960. [35] i. a. kossyi, a. y. kostinsky, a. a. matveyev and v. p. silakov, "kinetic scheme of the nonequilibrium discharge in nitrogen-oxygen mixture", plasma sources sci. technol., vol. 1, pp. 207-220, 1992. facta universitatis series: electronics and energetics vol. 34, no 1, march 2021, pp. 105-114 https://doi.org/10.2298/fuee2101105r © 2021 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper design of novel multiplexer circuits in qca nanocomputing hamid rashidi, abdalhossein rezai acecr institute of higher education, isfahan branch, isfahan, iran, abstract. quantum-dot cellular automata (qca) technology is a promising alternative nano-scale technology for cmos technology. in digital circuits, a multiplexer is one of the most important components. in this study, an efficient and single layer 2 to 1 qca multiplexer circuit is proposed using majority gate and inverter gate. in addition, efficient 4 to 1 and 8 to 1 qca multiplexer circuits are implemented using this 2 to 1 multiplexer circuit. the developed multiplexer circuits are implemented in qcadesigner tool. according to the results, the developed 2 to 1, 4 to 1, and 8 to 1 multiplexer circuits utilize 16 (0.01μm2), 96 (0.11μm2), and 286 (0.43μm2) qca cell (area). the results demonstrate that the proposed 8 to 1 multiplexer circuit reduces the cost by about 25%99% compared to the existing multiplexer circuits. key words: multiplexer circuit, quantum-dot cellular automata; coplanar, nanotechnology, nanoelectronics 1. introduction quantum-dot cellular automata (qca) is one of the technologies at nano-scale level, which is developed by lent et al. [1] in 1993. the qca technology can be used for maintaining the trend predicted by moore’s law [2]. this technology has many advantages such as high device density, high switching speed, and low power consumption in comparison with complementary metal-oxide-semiconductor (cmos) technology [3]. basic devices in this technology consist of qca cells, wire crossing and qca logic gates. the fundamental unit in the qca technology is the qca cell that is comprised of a square with 4 quantum dots in corners [1, 4]. it should be noted that each qca cell has only two electrons that can tunnel through neighboring dots. these two electrons are resided in opposite corners. so, there are two possible polarizations. fig. 1 shows these two kinds of polarization, p= -1 and p=+ of qca cells [5]. received july 30, 2020; received in revised form october 10, 2020 corresponding author: abdalhossein rezai acecr institute of higher education, isfahan, iran e-mail: rezaie@acecr.ac.ir 106 z. taheri, a. rezai fig. 1 two possible polarizations in qca cells, p= -1 and p=+1[5] qca wires consist of a number of qca cells which can be used for transferring input cell polarization [5]. qca wires can be categorized in two groups: (a) single layer crossing wire, and (b) multilayer crossing wire. in addition, a four-phase (four-zone) clock pulse provided synchronization of information flow in the qca circuits. the qca clock pulse is employed to reduce power dissipation [3, 6]. the qca cells behave like a single latch in each clock phase and propagate information in the same direction. as illustrated in fig. 2, the qca clock is composed of four phases and each phase is shifted by 90 degrees [3, 6]. in the clock phase, a signal has four states: 1) low-to-high state (switch phase), 2) high state (hold phase), 3) high-to-low (release phase), 4) low state (relax phase). fig. 2 four phases of the qca [3, 6] design of novel multiplexer circuits in qca nanocomputing 107 when the qca clock is in the low-to-high state, the potential energy of the qca cell is low. so, tunneling barriers of the qca cell start to raise and their polarizations start to actual computation according to the state of their neighboring cells during switch phase. the potential barriers of the qca cells are in the highest level and they avoid electrons from tunneling in the hold phase. during the release phase, the reduction in the cell polarization is started and the tunneling barriers gradually are reduced. finally, in the relax phase, the cells stay in an unpolarized state when potential barriers are held in low state and no barrier exists between the dots. the overall delay of the qca circuits can be specified by the number of critical path clock phase [3]. in qca circuits basic logic units are majority voter gate (mvg) and inverter gate [1]. the 3-input mvg is considered as the most important gate in the qca technology. it is because the 2-input or gate and 2-input and gate can be constructed using mvg by fixing one of the three inputs to p= +1 or p= -1, respectively [6]. the logic function of the mvg can be defined by the following equation: maj (a, b, c) = out = ab + bc + ca (1) where a, b, and c are inputs and the output is displayed by out. a four-phase clock pulse provides synchronization of information flow in the qca circuits [7]. in addition, the qca clock is employed for reducing the power dissipation [8]. the qca cells behave similarly to a single latch in each clock phase. so, the information is propagated in the same direction. in recent years, many different logic circuits have been developed in the qca technology for various applications, such as qca multiplier [9], qca full adder [5, 10], qca multiplexer [3, 6-9, 11-15], qca counter [16], qca shift register [17], and qca comparator [18, 19]. in addition, multiplexer circuits play a significant role in the digital circuit design such as arithmetic logic unit design [6]. in this study, we develop a circuit with the aim of improving the performance of the single-layer 2 to 1 qca multiplexer. then, efficient and single-layer 4 to 1 and 8 to 1 multiplexer circuits are implemented based on this 2 to 1 multiplexer. 2. design of 2 to 1 qca multiplexer the developed 2 to 1 qca multiplexer is shown in fig. 3. this circuit consists of one inverter gate, one rotate majority voter gate (rmvg) and two original majority voter gates (omvgs) due to area efficiency and need to have suitable architecture for modular design methodology for constructing efficient 2n to 1 multiplexer circuits. this circuit consists of two inputs, a and b, one address line, s, and one output, f. the output f is expressed by the following equation: f = a. s̅ + b. s (2) 108 z. taheri, a. rezai fig. 3 the developed 2 to 1 qca multiplexer circuit (a) logical circuit, (b) layout to verify and justify the layout of the developed single layer 2 to 1 qca multiplexer, qcadesigner tool version 2.0.3 [20] is utilized as a simulator on the cell level for qca circuits. figure 4 shows the simulated waveform of the developed 2 to 1 multiplexer circuit. fig. 4 the waveform of the developed 2 to 1 multiplexer circuit it should be mentioned that for rapid access to simulation results, bi-stable approximation simulation engine has been chosen. for optimum layout, cellular layout of the developed 2 to 1 multiplexer is designed in one layer using 16 qca cells and an area of 0.01 μm2. it also takes 0.5 clock cycles to generate the output. table 1 summarizes comprehensive comparison between the developed single layer 2 to 1 qca multiplexer circuit and other circuits in [3, 6-8, 13, 14] with regard to the latency design of novel multiplexer circuits in qca nanocomputing 109 (required clock cycles), cell count, circuit area (µm2), and cost, where the cost is defined by following equation: cost = area × latency2 (3) table 1 the simulation results of the single-layer 2 to 1 multiplexer circuits reference number of cells area (µm2) latency cost [14] 27 0.03 0.75 0.0169 [13] 19 0.02 0.75 0.0113 [7] 26 0.02 0.5 0.005 [6] 19 0.02 0.5 0.005 [8] 23 0.02 0.5 0.005 [15] 24 0.02 0.75 0.0113 [3] 15 0.01 0.5 0.0025 this paper 16 0.01 0.5 0.0025 based on these simulation results, the developed 2 to 1 multiplexer circuit has an improvement with regard to cost, cell count, latency and circuit area compared to other 2 to 1 qca multiplexer circuits in [13, 14, 15]. moreover, our developed circuit has advantages with regard to cost, cell count, and circuit area compared to 2 to 1 qca multiplexer circuits in [6-8]. the results demonstrate that the proposed 2 to 1 multiplexer circuit reduced the cost by about 50%-85% compared to the circuits that are proposed in [6-8, 13-15]. although the 2 to 1 multiplexer circuit in [3] has advantages compared to our developed 2 to 1 multiplexer, the architecture of the developed 2 to 1 multiplexer is such that it is suitable for modular design methodology for constructing efficient 2n to 1 multiplexer circuits. 3. design of 4 to 1 qca multiplexer the developed single-layer 4 to 1 qca multiplexer circuit is shown in fig. 5, which utilizes three developed 2 to 1 qca multiplexer modules. fig. 5 the developed single-layer 4 to 1 qca multiplexer circuit (a) layout, (b) logic circuit 110 z. taheri, a. rezai the developed circuit consists of two address lines, four inputs, and one output. a, b, c, and d are utilized as input signals, s0 and s1 denote the address lines and output signal is shown by f. the output f is expressed by following equation: 𝐹 = (𝑆1. 𝑆0)𝐷 + (𝑆1. 𝑆̅0)𝐶 + (𝑆̅1. 𝑆0)𝐵 + (𝑆̅1. 𝑆̅0)𝐴 (4) figure 6 shows the simulated waveform of the developed 4 to 1 multiplexer design. fig. 6 the waveform of the developed 4 to 1 multiplexer design for optimum layout, the cellular layout of the developed 4 to 1 multiplexer is designed in one layer using 96 qca cells and an area of 0.11 μm2. it also takes 1 clock cycle to generate the output. table 2 summarizes comprehensive comparison between the developed single-layer 4 to 1 qca multiplexer circuit and previous 4 to 1 qca multiplexer circuits in [3, 7, 8, 11, 12]. table 2 the simulation results for the 4 to 1 qca multiplexer circuits reference number of cells area (µm2) latency cost [7] 271 0.37 4.75 8.3481 [11]* 251 0.2 1.25 0.3125 [11] 199 0.27 1.50 0.6075 [8] 155 0.24 1.25 0.375 [12]* 103 0.08 1.75 0.245 [3] 107 0.15 1 0.15 this paper 96 0.11 1 0.11 * multilayer based on these simulation results, the developed 4 to 1 qca multiplexer circuit has advantages with regard to cost, cell count, latency, and circuit area compared to other 4 to 1 qca multiplexer circuits in [7, 8, 11, 12]. our developed 4 to 1 multiplexer circuit provides an improvement in terms of cost, number of cells, and circuit area compared to 4 to 1 qca multiplexer circuit in [3]. the developed circuit also provides an improvement in comparison with 4 to 1 qca multiplexer circuit in [12] with regard to cost, cell count design of novel multiplexer circuits in qca nanocomputing 111 and latency. the results demonstrate that the proposed 4 to 1 multiplexer circuit reduces the cost by about 26%-98% compared to the circuits that are proposed in [3, 7, 8, 11, 12]. 4. design of 8 to 1 qca multiplexer the developed single-layer 8 to 1 qca multiplexer circuit is displayed in fig. 7, which utilizes the developed 2 to 1 multiplexer circuit and two developed 4 to 1 qca multiplexer circuits. the developed circuit consists of eight inputs, one output, and three address lines. a, b, c, d, e, f, g, and h are utilized as input signals, s0, s1, and s2 denote the address lines and output signal is shown by out. the output out, is expressed by the following equation: out=(s2.s1.s0)h+(s2.s1.s ̅0)g+(s2.s ̅1.s0)f+(s2.s ̅1.s ̅0)e+(s ̅2.s1.s0)d +(s ̅2.s1.s ̅0)c+(s ̅2.s ̅1.s0)b+(s ̅2.s ̅1.s ̅0)a (5) fig. 7 the developed single-layer 8 to 1 multiplexer circuit 112 z. taheri, a. rezai figure 8 shows the simulated waveform of the developed 8 to 1 multiplexer design. fig. 8 the waveform of the developed 8 to 1 multiplexer design for optimum layout, qca layout of the developed 8 to 1 multiplexer is designed in one layer using 286 qca cells and an area of 0.43 μm2. it also takes 1.5 clock cycles to generate the output. table 3 summarizes comprehensive comparison between the developed singlelayer 8 to 1 multiplexer circuit and previous 8 to 1 qca multiplexer circuits in [3, 7, 8, 11]. table 3 the simulation results for the 8 to 1 qca multiplexer circuits based on these simulation results, the developed 8 to 1 qca multiplexer circuit has advantages with regard to cost, cell count, latency and circuit area compared to other 8 to 1 qca multiplexer circuits in [7, 8, 11]. moreover, our developed circuit has advantages with regard to cost, cell count, and circuit area compared to 8 to 1 qca multiplexer circuit in [3]. the results demonstrate that the proposed 8 to 1 multiplexer circuit reduces the cost by about 25%-99% compared to the circuits that are proposed in [3, 7, 8, 11]. reference number of cells area (µm2) latency cost [7] 1312 1.83 10.5 201.76 [8] 462 0.87 1.75 2.67 [11] 494 0.58 2.25 2.94 [3] 293 0.58 1.5 1.31 this paper 286 0.43 1.5 0.97 design of novel multiplexer circuits in qca nanocomputing 113 5. conclusions there are several kinds of nanotechnologies that are developed for replacing conventional cmos technology [21-23]. the qca technology is one of these nanotechnologies that provide the promising advantages. in this study, we have developed a novel and efficient single-layer circuit for 2 to 1 qca multiplexer based on majority and inverter gates. then, using this 2 to 1 qca multiplexer circuit, the 4 to 1 and 8 to 1 qca multiplexer circuits are developed. the developed circuits for qca multiplexers have been simulated using qcadesigner 2.0.3. according to the results, the developed 2 to 1, 4 to 1, and 8 to 1 multiplexer circuits utilized 16 (0.01μm2), 96 (0.11μm2), and 286 (0.43μm2) qca cell (area). the results demonstrate that the proposed 8 to 1 multiplexer circuit reduces the cost by about 25%99% compared to the circuits that are proposed in [3, 7, 8, 11]. references [1] c.s. lent, p.d. tougaw, w. porod et al. "quantum cellular automata", nanotechnology, vol. 4, no. 1, pp. 49–57, 1993. [2] j.d. meindl, "beyond moore’s law: the interconnect era", comput. sci. eng., vol. 5, no. 1, pp. 20–24, 2003. [3] h. rashidi, a. rezai and s. soltany, "high-performance multiplexer architecture for quantum-dot cellular automata", j. comput. electron., vol. 15, no. 3, pp. 968–981, 2016. [4] z. taheri, a. rezai, and h. rashidi, "novel single layer fault tolerance rca construction for qca technology", fu elec. energ., vol. 32, no. 4, pp. 601-613, 2019. [5] d. mokhtari, a. rezai, h. rashidi, f. rabiei, s. emadi and a. karimi, "design of novel efficient full adder circuit for quantum-dot cellular automata technology", fu elec. energ., vol. 31, no. 2, pp. 279-285, 2018. [6] b. sen, m. dutta, m. goswami and b. k. sikdar, "modular design of testable reversible alu by qca multiplexer with increase in programmability", microelectronics j., vol. 45, no. 11, pp. 1522–1532, 2014. [7] r. sabbaghi-nadooshan and m. kianpour, "a novel qca implementation of mux-based universal shift register", j. comput. electron., vol. 13, pp. 1–13, 2013. [8] b. sen, m. goswami, s. mazumdar and b.k. sikdar, "towards modular design of reliable quantum-dot cellular automata logic circuit using multiplexers", comput. electr. eng., vol. 45, pp. 42–54, 2015. [9] j.d. wood and d. tougaw, "matrix multiplication using quantum-dot cellular automata to implement conventional micro-electronics", ieee trans. nanotechnol., vol. 10, no. 5, pp. 1036–1042, 2011. [10] m. hayati, and a. rezaei "design of novel efficient adder and subtractor for quantum-dot cellular automata", int. j. circ. theor. appl., vol. 43, no. 10, pp. 1446–1454, 2015. [11] g. cocorullo, p. corsonello, f. frustaci and s. perri, "design of efficient qca multiplexers", int. j. circ. theor. appl., vol. 44, no. 3, pp. 602–615, 2016. [12] b. sen, a. nag, a. de and b.k. sikdar "towards the hierarchical design of multilayer qca logic circuit", j. comput. sci., vol. 11, pp. 233–244, 2015. [13] b. sen, m. dutta, d. saran and b.k. sikdar, "an efficient multiplexer in quantum-dot cellular automata", in proceedings of the progress in vlsi design and test, lecture notes in computer science, vol. 7373, 2012, pp. 350-351. [14] a. roohi, h. khademolhosseini, s. sayedsalehi, and k. navi, "a novel architecture for quantum-dot cellular automata multiplexer", int. j. comput. sci., vol. 8, pp. 55–60, 2011. [15] r. singh and d. k. sharma, "design of efficient multilayer ram cell in qca framework", circuit world, vol. 47, no. 1, pp. 31-41, 2020. [16] m. n. divshali, a. rezai and s.s.f. hamidpour, "design of novel coplanar counter circuit in quantum-dot cellular automata technology", int. j. theor. phys., vol. 58, no. 8, pp. 2677–2691, 2019. [17] m. n. divshali, a. rezai and a. karimi, "towards multilayer qca siso shift register based on efficient d-ff circuits", int. j. theor. phys., vol. 57, no. 11, pp. 3326–3339, 2018. [18] a. shiri, a. rezai and h. mahmoodian, "design of efficient coplanar 1-bit comparator circuit in qca technology", fu elec. energ., vol. 32, no. 1, pp. 119-128, 2019. [19] r. mokhtarii and a. rezai, "investigation and design of novel comparator in quantum-dot cellular automata technology", j. nano-electron. phys., vol. 10, no. 5, pp. 50141-50144, 2018. [20] k. walus, t. dysart, g.a. jullien and r. budiman, "qcadesigner: a rapid design and simulation tool for quantum-dot cellular automata", ieee trans. nanotechnol., vol. 3, no. 1, pp. 26–31, 2004. 114 z. taheri, a. rezai [21] a. naderi, and m. ghodrati, "improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region", eur. phys. j. plus, vol. 132, no. 12, p. 510, 2017. [22] a. naderi and b. tahne, "methods in improving the performance of carbon nanotube field effect transistors", ecs j. solid-state sci. technol., vol. 5, no. 12, pp. m131-m140, 2016. [23] a. naderi and f. heirani, "improvement in the performance of soi-mesfets by t-shaped oxide part at channel region: dc and rf characteristics", superlattices and microstructures, vol. 111, pp. 1022-1033, 2017. facta universitatis series: electronics and energetics vol. 33, no 1, march 2020, pp. 105-117 https://doi.org/10.2298/fuee2001105v © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd impact strength of 3d-printed polycarbonate  hans de vries, roy engelen, esther janssen high tech campus 7, eindhoven, netherlands abstract. a vertical wall printed by fused filament fabrication consists of a ribbed surface profile, due to the layer wise deposition of molten plastic. the notches between the printed layers act as stress concentrators and decrease its resistance to impact. this article shows the relation between impact strength and layer height by experimental data and finite element simulations of the stress intensity factor and the plastic zone near the tip of the notch. the impact resistance increased from 6 to 32 kj/m2, when the layer height was decreased from 1.8 to 0.2 mm. when notches were removed by sanding, the samples did not fail any more during impact testing, resembling the behavior of smooth molded test bars. tensile strength values up to 61 mpa were measured independent of layer height. birefringence measurements were done to determine the actual stress levels, which ranged from 2 to 5 mpa. key words: 3d-printing, polycarbonate, layer height, residual stress, impact strength. 1. introduction fused filament fabrication is an additive manufacturing process in which a product is built up layer-by-layer. each subsequent layer must adhere to the previous layer. in the case of polymers this is done at temperatures well above the glass transition temperature, such that the polymer chains have enough mobility to interpenetrate and a strong interface layer is formed. the tensile and flexural strength of 3d-printed polycarbonate parts can be nearly as high as for injection molded material. values of 88–89% of the bulkor injection molded strength have been published [1,2]. slightly lower values of 63–82% have also been reported, which is probably due to different printing toolpaths and process settings [3,4]. an important geometric difference with injection molded material is the notch that is formed between the printed layers. these can act as loci of stress concentration and might impair the impact strength. moreover, internal stress may add or detract from the strength of the material. this justifies an investigation of the additional stress that builds up in the material during the 3d-printing process. received june 19, 2019; received in revised form october 2, 2019 corresponding author: hans de vries high tech campus 7, 5656ae eindhoven, netherlands (e-mail: j.w.c.de.vries@signify.com)  106 h. de vries, r. engelen, e. janssen unlike for injection molded material, not many studies on the internal stress of 3dprinted materials have been published. here, a few that do exist are briefly mentioned. in [5] the deformation and associated stress was experimentally determined from contact measurements and analytically described for abs (acrylonitrile butadiene styrene)-plates. from correspondence with the authors it became clear that their solution cannot be readily applied to samples with a completely different form factor – single pass, vertical walls as used in our work. still, their study is interesting because of its potential to determine the stress in opaque materials. in another investigation, the deformation field was determined by a speckle technique [6]. this also concerned plates of abs. the hole drilling method was used to measure the deformation in printed abs-plates [7]. what all these studies have in common is that they show that the stress at the surface of 3d-printed material is (slightly) compressive while at the interior it is (slightly) tensile. finally, in a study on 3d-printed abs it was also speculated that the notches – or lobes as these authors called it – between the printed layers can act as stress concentrators [8]. in this work the effect of the lobes or notches in 3d-printed structures of polycarbonate on the mechanical strength is investigated. this is done by subjecting as-printed and polished samples to impact tests. in both type of samples, the stress level is estimated from birefringence measurements. 2. experiments 2.1. test samples single wall structures were printed on a desktop printer (ultimaker 2+), which was modified to allow printing of polycarbonate at a temperature between 250 and 300°c. maximum bond strength is reached above the glass transition temperature, when the polymer molecules diffuse across the interface of two consecutive layers [9]. printing was done with layer heights of 0.2 to 1.8 mm. the thickness of the wall after printing was around 2 mm for all layer heights, except for the 1.8 mm layer which had a 3 mm thick wall (see table 1). test bars of 125x13x2 mm3 were made by machining them out of vertically (sic) printed walls. the stack of printed layers was in the length direction of the sample (see figure 1). a part of the bars was polished to remove the notches between the layers. this is supposed to reduce the stress concentration at the tip of these notches as was referred to in the introduction. 2.2. mechanical tests charpy impact tests were performed (impact xjc-25, chengdu jingmi co. ltd.) on as-printed and polished samples. it must be noted that this test was not executed completely according to any standard, only the anvil was set to the required width of 40 mm [10]. the impact strength was determined with the samples positioned as shown in figure 1, thus striking on the face of the wall. machining the test samples from the printed walls means that the narrower cut side is smooth, and thus polishing of that side makes no sense. still, the impact strength in that direction was tested as well. for tensile testing, dog bones (astm type iv) were cut from the printed walls and mounted in a zwick1464 test machine. the tests were performed at a speed of 4 mm per minute. impact strength of 3d-printed polycarbonate 107 fig. 1 structure for impact testing, the hatching representing the printed layers. the dashed grey area (left picture) indicates the position in the vertical wall where the test bar (right picture) is cut from. the arrow shows the direction of the impact 2.3. birefringence internal stress can be determined by retardation caused by birefringence. this was measured by polarization microscopy (leitz laborlux 12 pol) with a 1942k-compensator. for reasons of comparison, the birefringence in injection molded samples was also measured. some materials have a refractive index that depends on the polarization of light. noncubic crystals and plastics under stress exhibit this phenomenon. an incoming light beam is split in two beams with mutual perpendicular polarization directions. after exiting the material, the two beams have a phase difference since one beam will be retarded compared to the other. by means of a compensating filter the phase difference can be determined and the retardation (r) can be obtained from a table. the retardation depends on the thickness of the material (t), the stress-optical constant (c), and on the stress level: , (1) where the ii are the first two principal stress components. for polycarbonate several values for the stress-optical constant are mentioned [11,12]. for this investigation a value of 8.9x10-11 pa-1 was adopted. this implies that the absolute value of the stress values mentioned in this report are subject to a possible correction if the material’s constant must be changed. 3. results in this section, the nondestructive analyses will be presented first. this includes both the optical microscopy and polarization measurements. the next part concerns the outcome of the destructive tests i.e. tensile and impact strength. photographs of a few printed and polished samples are shown in figure 2. it is a top view of the sample as sketched in figure 1. thus, one is looking at the cross section of the printed wall. 108 h. de vries, r. engelen, e. janssen 0.2 mm layer height 1.2 mm layer height fig. 2 top view of printed bars (see figure 1) as-printed (left) and after polishing (right). the red scale bar is 0.5 mm as printed polished fig. 3 side view of samples. polarized images of sample with layers of 1 mm height. left: compensator at 0°; right: with compensation (as-printed ~9.5° and polished ~7.5°) impact strength of 3d-printed polycarbonate 109 3.1. birefringence / stress the internal or residual stress that was obtained from the retardation measurements is listed in table 1 for the as-printed and the polished samples. it must be remembered that this is the difference between the two first principal stress components. each measurement was made right in the center of the layer. an example is shown in figure 3 for a sample with layers of 1 mm height. this is a front view of the sample as sketched in figure 1. thus one is looking at the ridged front wall of the sample. the black band indicates the compensated or stress-free situation. this is approximately 9.5 for the as-printed case and ~7.5 for the polished case. it should be noted that the same samples were measured both before and after polishing. to calculate the stress from the retardation, the thickness of the material is needed (see eq. (1)). in the as-printed samples this is the printed thickness of the wall (tprint), and for the polished samples it is the remaining material, which is the thickness of the interface (tint). in figure 4 we show the stress data as a function of the printed layer height. data is included that was obtained on injection molded pieces of polycarbonate. there is no clear difference between the internal stress in the as-printed and polished samples, which indicates that the residual stress does not depend on the ridged geometry of the printed layers. for the small printed layer height an increased internal stress is observed. as the printed layers are higher, the internal stress approaches the level of the injection molded material. table 1 retardation (r) and stress (s, difference between first two principal stress components). the printed layer height (h), thickness of wall after printing (tprint) and of interface (tint) are given. h tprint tint r s r s mm mm mm nm mpa nm mpa as-printed polished 0.2 1.93 1.73 853 4.91±0.26 776 5.37±0.17 0.4 1.90 1.72 899 5.26± 669 4.49±0.32 0.8 2.14 1.60 727 3.78±0.23 636 4.36±0.10 1.0 2.09 1.42 627 3.34±0.17 394 2.72±0.26 1.2 2.19 1.39 640 3.26±0.31 373 2.55±0.20 1.8 3.10 1.61 685 2.45±0.11 473 2.35±0.42 3.2. tensile strength and impact strength tensile strength tests were made on dog bone type samples. the available results are listed in table 2 and graphically shown in figure 5. not in all cases a polished sample could be made for testing. the strength was 77–94% of the bulk value for the injection molded polycarbonate, showing that the process is well controlled. it also shows that the tensile strength of the material is a material property that is not significantly affected by both the layer height and the ridged geometry that are the result of the 3d-printing process. the measurements from the impact tests give the energy that is absorbed during the shock. in order to compare the results of various samples having different geometries, it was decided to use the energy per cross sectional area. in the case of 3d-printed samples 110 h. de vries, r. engelen, e. janssen this is the internal cross section for which the thickness of the interface between two layers is taken. the test results are compiled in table 2. a graphical representation of the test results can be found in figure 6. in the case of polished 0.8 mm high layers, two out of four samples did not fail. the polished samples with layers of 0.2and 0.4-mm height did not fail at all. this means that the impact strength was more than 200 kj/m2 given the maximum energy of 4j of the heaviest hammer in the test facility (in the figure this has been indicated by the dashed arrows). evidently, the impact strength depends on both the layer height and the ridged geometry that are the result of the 3d-printing process. anticipating the discussion of these results, the iso (179/1ea) test value with a notch radius of 0.25 mm for molded polycarbonate is 65 kj/m2. when the notch radius is varied, impact strengths in the range of 10 to over 80 kj/m2 were measured [13]. fig. 4 stress calculated from retardation measurements by eq. (1). data from table 1. asprinted (), polished (). the shaded band indicates the stress level in unnotched injection molded material fig. 5 tensile strength with data from table 2. as-printed (), polished (). the dashed line shows the injection molded value impact strength of 3d-printed polycarbonate 111 table 1 impact strength (j) and tensile strength (ts) for as-printed and polished samples. the printed layer height (h) is given, other sample data are in table 1. in some cases no polished samples could be made. h (mm) j (kj/m2) ts (mpa) as-printed polished as-printed polished 0.2 32±2 > 200 61.4±0.3 56.8±1.1 0.4 14±2 > 200 60.0±1.1 60.6±1.9 0.8 10±2 30±10 60.0±0.9 not tested 1.0 9±2 not tested 56.2±2.2 not tested 1.2 7±2 12±7 50.0±1.5 44.6 1.8 6±0.002 not tested 50.0±5.2 not tested fig. 6 absorbed impact energy versus printed layer height (see table 2). as-printed (), polished (). the vertical arrows indicate “no failure” (energy above 200 kj/m2) for polished samples 4. discussion during the process of 3d-printing material is added layer-by-layer. the process requires that this is done at an elevated temperature to ensure good adhesion between the layers, which is caused by diffusion and reptation [14]. as stacking of the layers proceeds, the already deposited material begins to cool down and shrinks. thus, thermal stress builds up throughout the entire structure. the additive manufacturing process also leads to inhomogeneity since the printed walls are not smooth but have rounded edges and sharp notches. at such notches stress concentrations occur and these might reduce the impact strength of the printed material. this was also supposed in an investigation of printed abs [8]. the experiments that are described in the previous sections, were designed to shed more light on the following questions:  what is the level of the internal stress in 3d-printed material?  what is the influence of the inhomogeneous nature (i.e. non-smooth surface finish) of fdm-printed material on its strength? 112 h. de vries, r. engelen, e. janssen it lies at hand that these questions are closely related. the above questions will be discussed first in a general sense based on the experimental results. afterwards, a detailed treatment of the several topics of this investigation will follow. 4.1. general not much has been published to date on the residual stress in samples made by 3dprinting. relevant to the present investigations is an analytical approach of the deformation and internal stress in 3d-printed beams from abs [5]. it reports radii of curvature of 1.4– 2.0 meter in beams of 5 mm in height made by layers of 200–350 µm thick. these numbers would lead to an internal stress of 2–3 mpa. tests on 3d-printed abs-plates of 3 mm thickness from layers of 240 µm thick, showed bending in the order of 10 µm over a span of 80 mm [6]. one can estimate that the stress amounts to about 6 mpa. also in abs, by the hole-drilling method, a residual stress of 6 mpa was determined [7]. although in these cases abs was used as material, the level of stress is comparable to the value we have found in polycarbonate. in the current study, the internal stress that could be extracted from birefringence measurements is in the range between 2 to 6 mpa (see table 1 and figure 4). this agrees with the abovementioned literature data. our own results for injection molded polycarbonate are on the lower end with about 2 mpa. no information was found concerning the distribution of the stress over the dimensions of the tested samples made by additive manufacturing techniques. of course, as for injection molded material such studies have been published. for instance, by gradually removing thin layers from an injection molded polycarbonate bar and subsequently measuring the stress at the surface, it was found that the stress becomes lower as one reaches the center of the material [15]. at the surface the stress was compressive. elsewhere, the stress near a weld line was modeled, and near the interface the stress increases rapidly [16]. this subject will be addressed further in the next paragraphs. 4.2. residual stress distribution the initial birefringence measurements were done in the center of the layer, i.e. the polarized light travels through the thickest cross-section of the printed ridged structure. no real difference exists between the printed and the polished samples, as one can see in figure 4. with above indications in mind of stress peaks near a weld line in injection molded material, an attempt was made to additional birefringence measurements over the wall thickness of the printed layers. however, only a very tentative indication was found that indeed the stress increases towards the interface. no quantification of the stress at that location was possible. 4.3. tensile and impact strength the tensile strength does not depend very markedly on the deposited layer height. there is a trend to higher strength as the printed layers get thinner (figure 5) and the strength of injection molded material is seen to be approached (60–65 mpa). as for the effect of the notches, these do not seem to have a large effect since the polished samples have the same tensile strength as the polished specimens. again, in the literature little has impact strength of 3d-printed polycarbonate 113 been published regarding the influence of layer height on the tensile strength. to date the only thorough piece of information concerns 3d-printed pla (polylactic acid) [17]. a slight decrease was observed there with thicker layers (0.04 to 0.2 mm). quite a different picture arises if we look at the impact strength. here, the height of the printed layer has a significant effect on the test result. thinner layers are much more resistant against an impact (figure 6). polishing away the edges makes even more of a difference. striking the polished specimen with layer height of 0.2 mm, 0.4 mm, and 0.8 mm (partly) on the flat surface, did not lead to fracture at all within the limits of the test equipment. with printed layers of 0.8 mm (partly) and 1.2 mm height, the impact strength after polishing has increased by a factor of between two and three. in combination with the apparent removal of the stress concentration at the layer interfaces, it must be concluded that there is also an increase in the robustness against impact loads. in the next paragraph this will be explored further. 4.4. stress intensity and plastic zone to try to explain the improved resistance of samples fabricated with thin rather than thick layers to impact loads, the concept of the crack-tip plastic zone can be used [18]. from a theoretical point of view, at a crack tip with a vanishing radius the stress would become infinite. since this does not reflect reality, for numerical calculations it was proposed to assume a rounded crack tip with an enhancement factor for the stress. the stress at the end of the crack is then higher than the applied stress. in addition, a region of plastic deformation was defined around the crack tip that prevents the crack propagating on its own. this so-called plastic zone blunts the sharp end of the crack. considering the influence of the printed layer height on the impact strength, it is worthwhile estimating the size of the plastic region. based on studies of the fracture behavior of ductile materials, an expression for the extension of the plastic region was derived [19]. for the present investigation a slightly different form can be used: ( ) (2) where ki is the stress intensity factor and y is the yield stress. estimating the magnitude, for ki values of 2.8 mpa.m0.5 for sharp and 5–10 mpa.m0.5 for blunt notches were reported [20]. elsewhere, 1.25 mpa.m0.5 was used [19]. concerning the yield stress, this will typically be around 40 mpa [15,19]. as a result, we get rpl values of 0.06 to 0.6 mm. this means that this crack-growth-damping-zone can be of the same dimension as the thinner printed layers of 0.2 and 0.4 mm, and perhaps even close to that found in samples with layers of 0.8 mm height. this will be further commented on at the end of this subsection. all the data for the stress intensity factor was determined for injection molded material. while the similarity in mechanical properties between this and 3d-printed material has been shown, it is better to separately estimate the stress intensity factor for the 3d-printed material. this was done by finite element simulations. a 20 mm-long sample of layered material was modeled in detail for the range of layer heights conform the dimensions specified in table 1. linear elastic material properties were used for standard polycarbonate with a modulus of 2.4 gpa and 0.37 for the poisson’s ratio. the application of a half penny-shaped crack-tip mesh at the notched interface between two 114 h. de vries, r. engelen, e. janssen layers allows for the accurate calculation of the stress field around the notched interface between the layers. the stress intensity factor was calculated using the j-integral method determined after imposing 1% tension to the sample. in figure 7 the result of the stress intensity factor is shown for the fabricated layer heights. in an actual loading situation, the stress will become higher near the end of a crack or notch, as was explained above. should the critical stress be reached, cracks will grow, and failure occurs. this is indicated by the critical stress intensity kic, which is regarded as a material constant. from the data in figure 7 one can infer that for thinner printed layers the actual stress intensity is further away from the critical level than for thicker printed layers. thus, the increased resistance of thin-layered structures against shock impact is understandable. as for the size of the plastic zone around the notch, the layer-height dependence of the stress intensity factor of figure 7 in combination with equation (2) suggests that the plastic zone grows almost linearly with the height of the printed layer. the validity of this observation is still under investigation. 4.5. notch radius the influence of the notch radius has previously been studied for molded samples. this concerned testing of samples with a predefined notch. the impact strength of polycarbonate at room temperature increased by a factor of about six if the radius of the notch was increased from 0.125 to 0.25 mm [13]. values were reported of 10–80 kj/m2. compared with the values in table 2 these are in line with the strength of 3d-printed polycarbonate. experiments on samples with notches of 0.13 to 0.5 mm radius showed roughly a doubling of the impact strength [21]. it is not yet possible to make an estimation of the radius of the notches between the printed layers. still, qualitatively, a rounding-off as the layers are thinner was found. again, this makes the samples made with thin layers stronger than those with thick layers. to summarize, three mechanisms have been identified that all enhance the impact strength of 3d-printed structures. printing of thin layers leads to a rounding of the notch and thus a lower stress peak at the interface between the layers. the second mechanism stems from the size of the plastic zone around the notch that reduces crack growth. there are indications that this zone is of the same dimension as the height of the thinnest layers. finally, polishing the printed wall to make it smooth removes the origin of the stress concentration. fig. 7 stress intensity ki as function of printed layer height. the dashed line is a guide to the eye impact strength of 3d-printed polycarbonate 115 5. summary and conclusions various experiments and analyses were carried out on 3d-printed samples with deposited layer heights from 0.2 mm to 1.8 mm. the purpose was to understand the relation between mechanical strength, internal stress and layer height in fdm-printed polycarbonate products. as it was supposed that the shape of the printed layers forms a notch-like indentation, several samples were polished to obtain a smooth wall. the main point of attention of this study was to evaluate the level and the variation of the internal stress and the possible relation with the impact strength of the samples. 3d-printed plastic parts may contain more internal stress than injection molded parts, due to the layered way of fabrication. this leads to deformation and residual stresses, especially for engineering plastics, which are processed at high temperatures. in this study, the measured internal stresses ranged from 2 mpa for molded samples to 2-5 mpa for 3dprinted parts, depending on the deposited layer height. polycarbonate is known to be sensitive to notches. notched molded samples have a lower impact strength than unnotched samples, because the notch acts as stress concentrator. due to the layered structure of 3d-printed parts, the surface intrinsically contains many notches. depending on layer height, and thus the radius of the notch, the measured impact strength ranged between 6 and 32 kj/m2. similar values (10-80 kj/m2) have been reported for notched molded samples [13]. tensile strength is dependent on the processing temperature and is not influenced by the notches on the surface. perpendicular to the layers, single pass, vertical printed walls have a strength of up to 61 mpa, which is 95% of the value measured for injection molded samples. the following conclusions can be drawn from the results of the investigations and are supported by results from finite element simulations: 5.1 internal stress  stress concentrates at the notches between the printed layers. removal of the edges to make a smooth wall reduces the stress concentration and makes the stress almost constant over the layer height.  the notch between thin layers is rounded as compared to the notch in thick layers. this reduces the magnitude of the stress at the interface.  the internal stress is of equal magnitude in the center of the layers in as-printed and polished samples. this was determined by optical birefringence measurements.  the internal stress increases as the printed layers get thinner. in the thickest layers of 1.8 mm the internal stress level was the same as that of injection molded material.  the stress intensity factor is lower for thinner layers which means that in samples with thinner layers more stress-load can be applied before fracture occurs.  there are indications of the existence of a plastic zone around the notch which is of the same size as the height of the thinner layers. this zone hampers the propagation of cracks.  it is very likely that the stress is not constant over the wall thickness of the printed layers. an attempt was made to determine such variation, but with an inconclusive result. this is a subject for further research. based on this set of conclusions, some trends in the impact strength can be noted. 116 h. de vries, r. engelen, e. janssen 5.2 impact strength and tensile strength  the impact strength is highest in samples with thin layers because of the rounded notches. the role of the plastic zone around the tip of the notch is however not yet completely understood.  removing the edges increases the impact strength in thin layered samples further because the stress concentrations are taken away.  the impact strength depends on the geometry of the printed samples (e.g. notch radius and layer height) it cannot be regarded as a material constant  the tensile strength is weakly affected by the layer height.  provided that the processing conditions during printing are such that a proper adhesion between the printed layers can be achieved, the tensile strength can be regarded as a material property for the 3d-printed samples. acknowledgement: the authors are grateful to rifat hikmet, loes koopmans, leendert van der tempel, and ruud stelten for technical and theoretical support. references [1] j. cantrell, s. rohde, d. damiani, r. gurnani, l. disandro, j. anton, a. young, a. jerez, d. steinbach, c.kroese, p. ifju, "experimental characterization of the mechanical properties of 3d-printed abs and polycarbonate parts", rapid prototyping j., vol. 23, no. 4, pp. 811-829, 2017. [2] n. hill, m. haghi, "deposition direction-dependent failure criteria for fused deposition modeling polycarbonate", rapid prototyping j., vol. 20, no. 3, pp. 221-227, 2014. [3] w.c. smith, r.w. dean, "structural characteristics of fused deposition modeling polycarbonate material", polymer testing, vol. 32, pp. 1306-1312, 2013. [4] m. domingo-espin, j.m. puigoriol-forcada, a.a. garcia-granada, j. llumà, s. borros, g. reye, "mechanical property characterization and simulation of fused deposition modeling polycarbonate parts", materials and design, vol. 83, pp. 670-677, 2015. [5] v.a. safronov, r.s. khmyrov, d.v. kotoban, a.v. gusarov, "distortions and residual stresses at layerby-layer additive manufacturing by fusion", j. manuf. sc. eng., vol. 139, pp. 031017-1-6, 2017. [6] w. zhang, a.s. wu, j. sun, z. quan, b. gu, b. sun, c. cotton, d. heider, t.w. chou, "characterization of residual stress and deformation in additively manufactured abs polymer and composite systems", composites. sc. techn., vol. 150, pp. 102-110, 2017. [7] c. casavola, a. cazzato, v. moramarco, g. pappalettera, “residual stress measurement in fused deposition modelling parts”, polymer testing, vol. 58, pp. 249-255, 2017. [8] j.e. seppala, s.h. han, k.e. hillgartner, c.s. davis, k.b. migler, "weld formation during material extrusion additive manufacturing", soft matter, vol. 13, pp. 6761-6769, 2017. [9] see e.g. a.c. abbott, g.p. tandon, r.l. bradford, h. koerner, j.w. baur, "process-structure-property effects on abs bond strength in fused filament fabrication", additive manufacturing, vol. 19, pp. 29-38, 2018. j. yin, c. lu, j. fu, y. huang, y. zheng. "interfacial bonding during multi-material fused deposition modeling (fdm) process due to inter-molecular diffusion", materials and design, vol. 150, pp. 104-112, 2018. [10] metallic materials – charpy pendulum impact test – part 1: test method. iso 148-1. 2009. [11] s. shirouzu, h. shikuma, n. senda, m. yoshida, s. sakamoto, k. shigematsu, t. nakagawa, s. tagami, "stress optical coefficients in polycarbonates", jpn. j. appl. phys., vol. 29, no. 5, pp. 898-901, 1990. [12] r. wimberger-friedl, j.g. de bruin, h.f.m. schoo, "residual birefringence in modified polycarbonates", polymer eng. & sc., vol. 43, no. 1, pp. 62-70, 2003. [13] g. allen, d.c.w. morley, t. williams, "the impact strength of polycarbonate", j. mater. sc., vol. 8, pp. 1449-1452, 1973. [14] see e.g. j. f. rodriguez, thomas, and j. e. renaud, "maximizing the strength of fused-deposition abs plastic parts", solid freeform fabrication platform, pp. 335-342, 1999. j. p. thomas and j. f. impact strength of 3d-printed polycarbonate 117 rodríguez, "modeling the fracture strength between fused deposition extruded roads", solid freeform fabrication platform, pp. 16-23, 2000. [15] a. ram, o. zilber, s. kenig, "residual stresses and toughness of polycarbonate exposed to environmental conditions", polymer eng. & sc., vol. 25, no. 9, pp. 577-581, 1985 [16] b. yang, j. oujang, f. wang, "simulation of stress distribution near weld line in the viscoelastic melt mold filling process", j. appl. math., vol. 2013, article id 856171, 2013. [17] j. floor, "getting a grip on the ultimaker 2: tensile strength of 3d printed pla: a systematic investigation", technical university of delft, msc-thesis, 2015. [18] g.r. irwin, "analysis of stresses and strains near the end of a crack traversing a plate", j. applied mechanics, vol. 24, pp. 361-36, 1957. [19] m.t. takemori, d.s. matsumoto, "an unusual fatigue crack-tip plastic zone: the epsilon plastic zone of polycarbonate", j. polym. sc., vol. 20, pp. 2027-2040, 1982. [20] r.a.w. fraser, i.m. ward, "the impact fracture behavior of notched specimens of polycarbonate", j. mater. sc., vol. 12, pp. 459-468, 1977. [21] l.e. hornberger, g. fan, k.l devries, "effect of thermal treatment on the impact strength of polycarbonate", j. appl. phys., vol. 60, pp. 2678-2682, 1986. instruction facta universitatis series: electronics and energetics vol. 32, no 4, december 2019, pp. 503-512 https://doi.org/10.2298/fuee1904503k © 2019 by university of niš, serbia | creative commons license: cc by-nc-nd control of systems on spatial domains with moving boundaries: 3d printing and traffic  miroslav krstić department of mechanical and aerospace engineering university of california, san diego, la jolla, ca 92093-0411, u.s.a. abstract. until roughly the year 2000, control algorithms (of the kind that can be physically implemented and provided guarantees of stability and performance) were mostly available only for systems modeled by ordinary differential equations. in other words, while controllers were available for finite-dimensional systems, such as robotic manipulators of vehicles, they were not available for systems like fluid flows. with the emergence of the “backstepping” approach, it became possible to design control laws for systems modeled by partial differential equations (pdes), i.e., for infinite dimensional systems, and with inputs at the boundaries of spatial domains. but, until recently, such backstepping controllers for pdes were available only for systems evolving on fixed spatial pde domains, not for systems whose boundaries are also dynamical and move, such as in systems undergoing transition of phase of matter (like the solid-liquid transition, i.e., melting or crystallization). in this invited article we review new control designs for moving-boundary pdes of both parabolic and hyperbolic types and illustrate them by applications, respectively, in additive manufacturing (3d printing) and freeway traffic. key words: pde backstepping, stefan problem, 3d printing, traffic 1. control systems and feedback laws for dynamical systems modeled by ordinary or partial differential equations (pdes) with significantly fewer input variables than state variables—like a scalar input variable for a pde with a spatially-distributed or infinite-dimensional state—control theory constructs the input as a function(al) of the state. this achieves stability for the dynamical system, where ―stability‖ in a technically rigorous sense refers to a set of mathematical properties, which includes the property that the state converges to zero as time approaches infinity. received october 10, 2019 corresponding author: miroslav krstić department of mechanical and aerospace engineering, university of california, san diego, la jolla, ca 92093-0411, u.s.a. (e-mail: krstic@ucsd.edu)  504 m. krstić constructing such input functions, also called ―feedback laws‖ because the input depends on the measurable state, is part of the design of most technological systems. a simple example is the segway, whose driver would nosedive or fall backward without the feedback system that feeds the pitch angle measurements into the wheel angle inputs to keep the apparatus and rider upright. less obvious feedback systems developed through evolution to both keep organisms alive and prevent them from making drastic changes to themselves, regardless of how much they desire said modifications. for instance, feedback systems that regulate metabolism prevent people from achieving significant weight loss by starving themselves over several days. these feedback systems developed in the living organisms in order to maintain—in the case of human organisms—our energy reserves in periods of famine and during strenuous travel. 2. pde control on moving domains classical control theory developed for ordinary differential equations (odes) requires remarkable sophistication in the design of feedback laws for nonlinear systems. feedback synthesis for pdes poses even greater challenges, namely in transitioning from the finite to infinite system dimension. nonlinear ode control saw its greatest achievements in the 1980s [1] and 90s [2], whereas pde control has blossomed during the last two decades [3]. not all physical systems are modeled by odes of a fixed order or pdes on fixed domains. some important applications—including traffic, opinion dynamics, and climate science—involve processes whose dimensions or domains depend on the size of the process state. for instance, the state vector dimension can increase with the size of the state. or a higher temperature in its pde spatial domain may cause the domain to grow, as in, melting ocean ice. classical control techniques are unequipped to deal with such dimension-varying dynamics. in fact, such possibilities have rarely even occurred to the control research community, which has been preoccupied in recent years with already difficult nonlinear, infinite-dimensional, stochastic, and hybrid phenomena in fixed dimension. fig 1 examples of cascade systems in which a pde, which is directly controlled, feeds into an ode. top: a hyperbolic pde-ode cascade, where a pure delay is example of the simplest hyperbolic pde (example: control of congested traffic). bottom: a parabolic pde-ode traffic (example: additive manufactruring/3d printing). control on spatial domains with moving boundaries: 3d printing and traffic 505 among the simplest and most elegant problems with the state’s dimension that varies with the state’s size are those that involve a connected ode and pde, so that the pde’s state acts as an input to the ode, whose state thus represents the pde’s boundary location. such pde-ode systems may involve either hyperbolic or parabolic pdes. figure 1 depicts general pde-ode cascade systems in which the ode is a general stabilizable dynamical system. control of such pde-ode cascade systems is studied in [4]. in this article the ode considered is a special case—a scalar ode governing the position of the pde’s boundary. 3. control of the stefan system (parabolic): example of additive manufacturing with laser actuation an example of a parabolic pde-ode system in which the ode state represents the pde’s boundary locatoin is the so-called stefan system. developed and analytically solved in the late 1800s by slovenian-austrian physicist josef stefan (of stefan-boltzmann fame), known in former yugoslavia as jožef štefan, the system models melting and freezing [5]. fig. 2 diagrams of additive manufacturing through laser-based sintering. laser melts metal powder, which subsequently solidifies, allowing to build, layer-by-layer, a complex 3d solid form. top: a diagram of the laser sintering system. bottom: a notational representation of the temperature fields in the liquid and solid phases, represented in one spatial dimension, denoted by x. the heat flux qc represents a boundary input to the liquid phase. 506 m. krstić researchers have recently used the stefan system to model numerous other physical phenomena, including additive manufacturing with both polymers and metals, depicted in figure 2; growth of axons in neurons; tumor growth; cancer treatment via cryosurgeries; spread of invasive species in ecology; lithium-ion batteries; domain walls in ferroelectric thin films; and information propagation in social networks. figure 3, shows the image at the bottom of figure 2 rotated clockwise by 90 degrees, where tl(x,t) and ts(x,t) respectively represent the spatiotemporal temperatures in the solid and liquid. heat pdes govern the temperatures. a scalar ode—whose inputs are the heat fluxes at the pdes’ boundary—governs the liquid-solid interface position s(t). fig. 3 temperature profiles and phase interface in a pde-ode system involving a liquid, a solid, and rightward melting with the aid of heat flux applied by a laser on the left boundary. the stefan model is given by the parabolic (heat equation) pde in which t(x,t) represents the spatiotemporal distribution of temperature, at location x and at time t, the heat flux qc represents a boundary input at x = 0, and the liquid-solid interface s is governed by the ode even though the heat equation above, for t, appears linear, the scalar ode governing s is clearly nonlinear because its right-hand side is a nonlinear function of s, where the nonlinearity is the heat flux function at the liquid-solid interface. this nonlinearity, along with the non-constancy of the pde’s domain, is what makes control of this seemingly simple system quite challenging and entirely unconventional. control on spatial domains with moving boundaries: 3d printing and traffic 507 stefan’s pde-ode model gives rise to several control and state estimation problems. the early efforts on control of the stefan problem are [6, 7, 8, 9]. here we focus on a control problem that is both simple and difficult. the goal is to regulate the liquid-solid interface position s(t) to a setpoint sr > 0. this goal is depicted in figure 4. the nonobvious thing to note is that, as the liquid-solid interface position s(t) is regulated to its equilibrium value sr, the temperature in both the liquid and the solid phases is being regulated to the melting/freezing temperature tm. if this were not the case, namely, if the liquid were the be regulated substantially above, and the solid substantially below tm, the liquid-solid interface position s(t) would keep on moving, either melting more of the solid, or freezing more of the liquid. fig. 4 a depiction of the control objective in the stefan problem. the liquid-solid interface is regulated to the setpoint, while, at the same time, the temperature fields of both the liquid and the solid phases are being regulated to the melting/freezing temperature, which represents the thermal equilibrium in this problem. using the backstepping approach for pde-ode systems [4], we design and implement a feedback law qc(s, t) by using a laser to apply a heat flux to the liquid. this backstepping feedback is given by where c is a positive gain constant. this backstepping control law is proportional to the error between the measured thermal energy and the thermal energy at the melting/freezing point, plus the interface tracking error s sr. the feedback law appears linear but it is not. the dependence of the upper limit of integration in x on the solid-liquid interface s is what makes this controller nonlinear, for the system which is nonlinear. the backstepping approach entails construction of a volterra transformation of the temperature state and a lyapunov functional based on the transformed temperature state [10, 11].1 1 http://a2c2.org/awards/o-hugo-schuck-best-paper-award http://a2c2.org/awards/o-hugo-schuck-best-paper-award 508 m. krstić fig. 5 time evolution of the liquid-solid interface (top), which approaches its setpoint without an overshoot, and the temperature at the initial location of the liquid-solid interface (bottom) which starts from the melting point, has an upward excursion while the solid gets melted, and returns to the melting point, which is the system’s thermal equilibrium. at no point does the temperature in the liquid phase fall below freezing. at no point does the heat flux get negative, which ensures the monotonicity of the motion of the liquid-solid interface and the absence of frozen islands within the liquid. figure 5 shows that the controller succeeds in its task. the solid-liquid interface is regulated to its setpoint. the temperature throughout the liquid domain is regulated to the melting point, which is the system’s thermal equilibrium. this control law achieves global stabilization for all initial conditions where the liquid temperature is above melting and the solid temperature is below freezing; both temperatures remain in these states for all time. in physical terms, this means that no solid islands form within the liquid and no pools of liquid form within the solid. the maximum principle for the heat equation establishes this result [12, 13]. control on spatial domains with moving boundaries: 3d printing and traffic 509 4. control of moving shock in congested traffic the analog to the stefan system’s parabolic pde phenomenon is the hyperbolic pde phenomenon that arises in traffic. this originates with a moving shock that delineates the free traffic (upstream of shock) from the congested traffic (downstream from shock), as seen in figure 6. fig. 6 free traffic (upstream/left) and congested traffic (downstream/right) are separated by shock, depicted as a sharp increase in density. modulating the durations of the red and green lights on the on-ramps regulate the shock location to a desired position. the hyperbolic nonlinear lighthill-whitham-richards pde [14, 15], which acts as a simple delay for small deviations, models the traffic flow. a scalar ode governs the shock motion, and the traffic densities of the congested and free traffic at the shock location form the ode’s inputs. this ode represents the rankine-hugoniot jump condition that is common in compressible gas models. the pde-ode system is given by where the first pde models the density of cars in the free traffic segment, the second pde models the density in the congested traffic segment, and the ode at the bottom models the motion of the free-congested interface l(t), namely, of the shock location. 510 m. krstić if left uncontrolled, this system will exhibit the upstream motion of the shock, until the entire freeway is consumed by congestion. this is shown in figure 7, which shows a simulation of the pde model on the left and a simulation of a ―microscopic‖ model on the right (where each car’s motion is modeled individually). fig. 7 shock starting near the downstream end of the freeway segment propagates upstream until the entire freeway segment is consumed by congestion. left: lwr pde simulation. right: ―microscopic‖ simulation showing density of cars where blue denotes low density and yellow/green denotes high density, namely, congestion. to prevent the loss of free traffic, we again use the pde backstepping design to devise a feedback law that regulates the moving shock’s position to a setpoint. this backstepping controller is given by the formulas the variable uin denotes the deviation of the density of cars at the inlet of the freeway segment relative to a setpoint, whereas the variable uout denotes the deviation of the density of cars at the outlet of the freeway segment relative to a setpoint. the quantities kf and kc denote positive gain constants, whereas l denotes the length of the freeway segment. the feedback laws above are implemented via ―ramp metering,‖ which involves modulation of the red and green lights on the freeway on-ramps around steady durations that correspond to the desired location of the shock. figure 8 illustrates the success of the feedback laws. they ―arrest‖ the upstream drift of the shock and keep the segment of the freeway upstream of the shock in free, i.e., uncongested traffic. control on spatial domains with moving boundaries: 3d printing and traffic 511 fig. 8 the controllers implemented through ramp metering at the inlet and outlet of the freeway prevent the drift of the congested traffic beyond the setpoint for the shock. hence, the upstream portion of the freeway is kept uncongested (blue denotes low density of cars in both pictures). allowing the downstream portion of the freeway to be congested is important—not doing so would mean that many cars are prevented from entering the freeway and are instead kept on the ramps and on the streets leading to the ramps. the similarity between the feedback laws for the stefan (additive manufacturing) and the freeway problems are quite noticeable. both feedbacks include integrals over varying spatial domains and both feedbacks also include the error between the measured interface position and the reference position. analyzing the pde-ode system with the feedback law once again employs a backstepping/volterra transformation of the traffic density pde’s state, along with a resulting lyapunov functional. like with the stefan system, stability occurs in the h1 sobolev norm. the details are contained in [16]. however, while stability for the stefan system holds for all physically-meaningful initial conditions, it only holds locally—for small deviations of the density field around its equilibrium profile—for the traffic problem. another important result on control of an lwr-like model of traffic is [17]. 4. conclusions in this tutorial exposition of two pde control designs from distinct domains of physics and engineering, we have illustrated the current state-of-the art in designing controllers for infinite-dimensional systems modeled by pdes with moving boundaries. these techniques are also applicable to a variety of other phase-change problems, including tumor growth and cancer treatment, lithium-ion batteries, and information propagation in social networks, as well as to multi-phase flows, fluid-structure interactions, and undersea construction using long cables. future research needs to advance these techniques from one spatial dimension to two and three spatial dimension, multi-pde scenarios, and systems in which the interface is 512 m. krstić not governed by an ode but by another pde, possibly from a different class than in the main domain. an example of such a dynamical system is a biological cell whose membrane is governed by an elastic structural pde model (second-order in time and fourth-order in space), while the interior is governed by a diffusion-dominated parabolic pde. acknowledgement: the paper is the result of joint work with my students shumon koga (for the stefan problem) and huan yu (for the traffic problem). the material in this article was presented in two lectures that the author presented in the serbian academy of sciences and arts, one dedicated to traffic control and the other dedicated to the stefan model of systems with a phase change. references [1] a. isidori, nonlinear control systems, springer, 1989. [2] m. krstic, i. kanellakopoulos, and p. v. kokotovic, nonlinear and adaptive control design, wiley, 1995. [3] m. krstić and a. smyshlyaev, boundary control of pdes: a course on backstepping designs, siam, 2008. [4] m. krstić, delay compensation for nonlinear, adaptive, and pde systems, boston, ma: birkhauser, 2009. [5] j. stefan, ―uber die theorie der eisbildung, insbesondere uber die eisbildung im polarmeere,‖ annalen der physik, vol. 278, pp. 269–286, 1891. [6] a. armaou and p.d. christofides, ―robust control of parabolic pde systems with time-dependent spatial domains,‖ automatica, vol. 37, pp. 61–69, 2001. [7] n. petit, ―control problems for one-dimensional fluids and reactive fluids with moving interfaces,‖ in advances in the theory of control, signals and systems with physical modeling, volume 407 of lecture notes in control and information sciences, pages 323–337, lausanne, dec 2010. [8] b. petrus, j. bentsman, and b.g. thomas, ―feedback control of the two-phase stefan problem, with an application to the continuous casting of steel,‖ in proceedings of the 49th ieee conference on decision and control (cdc), 2010, pp. 1731–1736. [9] m. izadi and s. dubljevic, ―backstepping output feedback control of moving boundary parabolic pdes,‖ european journal of control, vol. 21, pp. 27–35, 2015. [10] s. koga, m. diagne, and m. krstić, ―control and state estimation of the one-phase stefan problem via backstepping design,‖ ieee transactions on automatic control, vol. 64, pp. 510–525, 2019. [11] s. koga, i. karafyllis, and m. krstić, ―input-to-state stability for the control of stefan problem with respect to heat loss at the interface,‖ in proceedings of the 2018 american control conference. milwaukee, wi, 2018. [12] a. friedman ―free boundary problems for parabolic equations i. melting of solids,‖ journal of mathematics and mechanics, vol. 8, no. 4, pp. 499–517, 1959. [13] s. gupta, the classical stefan problem. basic concepts, modelling and analysis. north-holland: applied mathematics and mechanics, 2003. [14] m. j. lighthill and g. b. whitham, ―on kinematic waves. ii. a theory of traffic flow on long crowded roads,‖ proc. roy. soc. london. ser. a., 229 317–345, 1955. [15] p. i. richards, ―shock waves on the highway,‖ operations res., 4, 42–51, 1956 [16] h. yu, l.-g. zhang, m. diagne, and m. krstic, ―bilateral boundary control of moving traffic shockwave,‖ ifac symposium on nonlinear control systems, 2019. [17] i. karafyllis, n. bekiaris-liberis, & m. papageorgiou. ―feedback control of nonlinear hyperbolic pde systems inspired by traffic flow models‖. ieee transactions on automatic control, 2018. 12561 facta universitatis series: electronics and energetics vol. 37, no 1, march 2024, pp. 229 247 https://doi.org/10.2298/fuee2401229u © 2024 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper a study on bitcoin price behaviour with analysis of daily bitcoin price data yüksel akay ünvan finance and banking department, business school, ankara yildirim beyazit university, ankara, turkey orcid id: yüksel akay ünvan https://orcid.org/0000-0002-0983-1455 abstract. cryptocurrencies, which have begun to become an important rival to cash due to the changing lifestyle and technological developments, are gradually increasing their coverage area. whether bitcoin prices, which have exhibited different behaviors over the years since the day they were developed, are on a rational basis has become an important topic of discussion. within the scope of this study, bitcoin prices between 2010 and 2023 were analyzed and factors that could make price behavior meaningful were tried to be determined. in addition, a forecast was also made in which bitcoin prices for the coming years were calculated on a daily basis together with various statistical parameters using the the triple exponential smoothing method based on same historical data, and the results were discussed from various perspectives. in bitcoin prices, which change mainly within the framework of supply and demand balance, attention has been drawn to the importance of different factors such as rational or irrational herd behavior, decisions taken about bitcoin or news that may affect this balance and fall within the scope of behavioral finance. along with the behavioral finance parameters that will make bitcoin price behavior meaningful, it may not always be possible to attribute some changes in the relevant data to a specific reason. the main view supporting this situation is based on the personal nature of cryptocurrency itself. key words: bitcoin, bitcoin price behaviour, behavioral finance 1. introduction time, as an inexorable law of existence, has a strong influence on all things, compelling the financial sector to undergo profound transformation. the foundation of this shift was influenced by changing requirements, as well as the ease and innovations resulting from technology improvements [1]. these considerations may include elements such as the received december 1, 2023; revised january 30, 2024 and february 29, 2024; accepted march 03, 2024 corresponding author: yüksel akay ünvan finance and banking department, business school, ankara yildirim beyazit university, ankara, turkey e-mail: akay.unvan@gmail.com https://orcid.org/0000-0002-0983-1455 mailto:akay.unvan@gmail.com 230 y. a. ünvan surge in e-commerce, the responsibilities imposed by the pandemic era, and the alteration of payment methods. the rise of cryptocurrencies in recent years has created innovative methods for conducting economic transactions and offered alternative forms of currency [2]. their influence on central financial markets is substantial. these electronic payment systems include a cutting-edge technology called blockchain, which enables the processing and authentication of transactions without relying on a central authority [3]. cryptocurrencies are decentralized digital or virtual currencies that use cryptographic techniques for security and function autonomously without the need for a central bank. bitcoin, the most renowned cryptocurrency, was launched in 2009 by an anonymous individual known as satoshi nakamoto [4]. subsequently, a multitude of other cryptocurrencies have been created, each with distinct characteristics and uses. the advent of cryptocurrencies has had a profound influence on the financial industry, providing an alternative to conventional fiat currencies and bringing novel approaches to conducting economic transactions. cryptocurrencies are decentralized and function on a technology known as blockchain, which is a distributed ledger that documents all transactions across a network of computers. this technology has the capacity to transform the manner in which financial transactions are carried out, providing enhanced transparency, security, and efficiency. multiple studies have examined the ramifications of cryptocurrencies on the economy and financial institutions. an example is the investigation conducted by yermack (2015) which analyzed the possible influence of bitcoin on monetary policy, financial regulation, and the stability of the conventional banking industry [5]. a separate investigation conducted by gandal, halaburda, and moore (2018) examined the manipulation of prices and trading behaviors inside cryptocurrency marketplaces [6]. these studies emphasize the increasing curiosity in comprehending the economic and financial consequences of cryptocurrencies. in addition, the emergence of cryptocurrencies has also resulted in the creation of novel financial tools and investment prospects. cryptocurrency exchanges and trading platforms have arisen, enabling people and institutions to purchase, sell, and exchange diverse digital assets. furthermore, the notion of initial coin offerings (icos) has introduced a novel method for entrepreneurs to generate funds by issuing digital tokens. to summarize, the development of cryptocurrencies has undeniably brought about novel methods of carrying out economic transactions and offered alternative kinds of currency. the influence of cryptocurrencies on the financial industry and the wider economy is a subject of considerable interest and investigation. given the increasing popularity and utilization of cryptocurrencies, it is essential for policymakers, regulators, and industry stakeholders to comprehend the ramifications and possible obstacles linked to these digital assets. instead, all participants in the peer-to-peer network are involved in these processes. the market comprises more than one thousand cryptocurrencies that use the same foundational blockchain technology, either as replicas of bitcoin or with notable technical advancements, and the majority of them operate on separate transaction networks [7]. currently, it is widely known that an anonymous individual or collective known as satoshi nakamoto was the creator of bitcoin in 2008. the use of it began in 2009, coinciding with its release as open source software. bitcoin is a decentralized digital currency that operates independently from any central bank or single administration. it may be moved directly between users on the bitcoin network (blockchain) without the involvement of middlemen [8]. nodes verify transactions using encryption and store them on a publicly accessible ledger known as the blockchain. a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 231 the factors influencing bitcoin values remain uncertain. one perspective argues that the value of digital currencies may be determined by the real users and their interactions, taking inspiration from the rich and diverse literature on network theory. another opinion contends that these prices may be a result of irrationality and have resemblance to historical bubbles that have happened over the course of human history. regulators have differing opinions about the validity and purpose of digital currency. as an example, governments often issue stern admonitions, contending that these currencies are incapable of substituting for or substantially fulfilling the roles of conventional fiat currencies. they may also facilitate and support criminal operations. nevertheless, despite these admonitions, there is a growing proliferation of firms who are embracing digital currencies like bitcoin. given the increasing interest, central bankers are now deliberating on the practicality of implementing government-backed digital currencies as a replacement for decentralized digital currencies [9]. nevertheless, regardless of the ongoing debates, it is certain that bitcoin and its advocates will have a growing influence on the future of the financial industry. this research examined the historical bitcoin values from 2010 to the present, focusing on the period between 2010 and 2023 due to the availability of price data. the study also explored the elements that might influence the behavior of bitcoin prices. firstly, a compilation of literature research investigating the behavior of bitcoin was conducted. subsequently, the subsequent part elucidated the determinants that influence the behavior of bitcoin prices. the data analysis section examines the fluctuations in bitcoin data on a yearly and monthly basis, and incorporates the elements that provide significance to these patterns. additionally, using the historical bitcoin values and applying the triple exponential smoothing method, it was predicted how bitcoin prices would be in the coming years. the conclusion portion included assessments based on the results gathered from the research. 2. literature review there are many articles in the literature that have studied bitcoin price behavior. these studies have been examined and various findings obtained from some studies have been shared in this section. firstly, stosic et al. (2018) examined cross-correlations between price changes of different cryptocurrencies. they found that many of the eigenvalues they considered in their study were not consistent with the universal predictions of random matrix theory. they also discovered quite different community structures in minimum spanning trees. as a result of the study, they concluded that collective behavior in the cryptocurrency market is different from other financial markets [7]. khan et al. (2010) analyzed the relationship between global economic policy uncertainty (gepu) and bitcoin prices (bcp) in their study where they applied the sliding window method, and concluded that there was no causality between gepu and bcp. as a result of the study, they pointed out that decision-makers should trigger the improvement of blockchain technology, which can be used for risk protection and portfolio diversification, and pointed out the importance of bringing laws and regulations into life regarding state interventions and prohibitions, which gives confidence to investors. they also stated that in order to protect against random market fluctuations, information about policy changes should be taken into account in the portfolio selection process. they pointed out the importance of investors being able to obtain detailed information about the global economy 232 y. a. ünvan and policy changes in the crypto market, which is more uncertain, variable and prone to sudden changes in the short term due to its unregulated structure [10]. jang and lee (2018) analyzed the volatility of the bitcoin currency using bayesian neural network (bnn), support vector regression (svr) and linear models with the help of time series created with the closing prices between september 11, 2011 and august 22, 2017 and evaluated the results [11]. the study conducted by chen et al., (2020) focuses on the utilization of machine learning and statistical techniques to forecast bitcoin values. the authors examine several prediction models and emphasize the significance of feature selection and data pretreatment in attaining precise outcomes [12]. in their study, salisu et al., (2019) examine the use of statistical models in forecasting bitcoin values and analyze the potential impact on the worldwide economy. they stress the need of using strong modeling tools to accurately represent the intricate dynamics of digital assets in a continuously changing market context [13]. karalevicius et al. (2017), in their study using investor sentiment and bitcoin price variables and the liquid-based sentiment analysis and sharpe ratio method, concluded that news about bitcoin is effective on semi-short-term bitcoin movements [14]. flori (2019), using the black-litterman model and bitcoin news and bitcoin returns variables, found that the effect of news on the bitcoin price is significant [15]. many studies analyze various machine learning and deep learning algorithms for bitcoin price prediction ([16]; [17]). sharma et al. (2023) explore the use of social media activities and past trends in predicting bitcoin prices [18]. these studies contribute to a better understanding of risk hedging strategies in the cryptocurrency market. ciaian et al. (2015) determined and evaluated the factors behind bitcoin price formation. for this purpose, in their study of daily bitcoin prices between 2009 and 2015, they first concluded that the market forces that direct bitcoin supply and demand are effective on the bitcoin price. furthermore, it has been shown that engaging in speculative behavior has a significant impact on the fluctuations of bitcoin values. one indication of this phenomenon is the direct correlation between the number of internet searches for information on bitcoin and the fluctuation of bitcoin prices. several research investigate various methodologies for forecasting the influence of social media statements on the valuation of cryptocurrencies [19]. yue et al., (2018) concentrate on extracting valuable information from large-scale data analysis, while rane and dhage, (2019) and wood et al., (2022) use advanced computational algorithms to forecast the price of bitcoin using machine learning methods ([20]; [21]; [22]). vidal-tomás (2021) examines bitcoin statistics and emphasizes the ongoing nature of the market [23]. gronwald (2014) discussed the bitcoin economy, using economic terms to determine how to seize bitcoins, and also discussed the debate on the comparison of bitcoin and gold. the application phase included the empirical analysis of bitcoin prices using the autoregressive jump density garch model. the article's conclusion highlights that the price of bitcoin is marked by very volatile fluctuations, a phenomenon often found in nascent markets [24]. kervanci & akay (2020) emphasized the higher predictive capabilities of machine learning techniques in comparison to conventional statistical methods for forecasting bitcoin values [25]. in addition, tong et al. (2022) conducted an in-depth examination of the nonlinear dynamics study of cryptocurrency price variations using bitcoin as a basis, providing insights into the intricate nature of cryptocurrency price changes [26]. the non-linear structure of bitcoin price movements highlights the difficulties in precisely forecasting cryptocurrency values. a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 233 kristoufek (2013) examined the correlation between google trends, wikipedia searches, and the price of bitcoin. the results demonstrate a bidirectional correlation between search queries and the price of bitcoin. additionally, they indicate that the impact of heightened interest in bitcoin is notably uneven when prices deviate from the overall trend. this suggests that such circumstances create a favorable environment for the emergence of bubble-like behavior [27]. the influence of social media messages, particularly those from influential figures like elon musk, on cryptocurrency markets has been a subject of interest ([28]; [29]), which explored the prediction of the impact of social media messages on the value of cryptocurrency, highlighting the insights gained from big data analytics [29]. this is essential as it illuminates the influence of social media on the formation of bitcoin market dynamics in 2018, bouri and his colleagues used the non-linear ardl model to examine the impact of gold and commodity index prices on bitcoin prices. their findings revealed a non-linear, asymmetric quantile link between the commodities index and bitcoin, as well as between gold and bitcoin [30]. the research conducted by guo et al. (2021) centers on the correlation between bitcoin price prediction and the fundamental blockchain transactions, offering a distinct viewpoint that might enhance comprehension of cryptocurrency markets. the authors use data analytic tools to examine the correlation between blockchain transactions and bitcoin price fluctuations, providing significant information for investors and academics in this domain. the study results illuminate the potential advantages of incorporating blockchain transaction patterns into bitcoin price forecasts, indicating that this strategy might improve accuracy and dependability in comparison to conventional forecasting techniques [31]. coulter (2022) demonstrated that the impact of cryptocurrency news in the media and factors such as media sensitivity and bitcoin price on cryptocurrencies is significant, using the latent dirichlet allocation (lda) approach [32]. de vries (2021) investigates the correlation between the increasing value of bitcoin and its use of electricity. the author examines the effects of rising costs on the energy consumption of the network [33]. griffin and shams (2020) examine the extent to which bitcoin is really independent. the researchers analyze the possible impact of tether, a stablecoin, on the fluctuations of bitcoin's price [34]. kavitha, sinha, and jain (2020) assess the effectiveness of several machine learning algorithms in forecasting bitcoin values. they evaluate the efficacy of various algorithms in predicting the volatility of bitcoin's price [35]. in sapkota's (2022) study, the heterogeneous autoregressive volatility model was used to examine the relationship between news sentiment and bitcoin price variability [36]. the findings indicate that media news sentiment significantly influences fluctuations in bitcoin price. 3. bitcoin price behaviour this section discusses the fundamental elements that may influence the price of bitcoin, which has shown diverse patterns since its inception. bitcoin's price is governed by the interplay between supply and demand. the stock market's performance is contingent upon several elements, including worldwide events like price drops, advancements in stock and 234 y. a. ünvan bond prices, and global economic developments such as the continuing trade war between the usa and china1 [37]. however, unlike monetary policy in countries with fiat currencies, which are subject to change in line with political and economic developments, the bitcoin ecosystem is a completely decentralized monetary system. the factors influencing bitcoin prices are multifaceted and encompass a wide range of economic, technological, and regulatory aspects. the supply and demand dynamics of bitcoin, the cost of production through mining, rewards for miners, the presence of competing cryptocurrencies, the exchanges on which bitcoin is traded, and regulatory and political developments all play a role in shaping bitcoin prices. additionally, local regulations, current events, and economic and political developments contribute to the volatility and valuation of bitcoin. several studies have delved into the various factors influencing bitcoin prices. guo et al. (2021) provide a perspective on how underlying blockchain transactions impact bitcoin price forecasting, shedding light on the role of transactional data in predicting bitcoin price movements [31]. ciaian et al. (2015) have explored the impact of market fundamentals and bitcoin's attractiveness for investors on bitcoin price formation, emphasizing the significance of these factors in influencing bitcoin prices [19]. zaman et al. (2022) have examined the impact of dramatic events and impactful news on bitcoin prices, highlighting the role of global events and public sentiment in shaping bitcoin valuations [38]. furthermore, wu & wang (2023) have studied the impact of chinese policies and regulations on bitcoin, emphasizing the influence of economic policy uncertainty on bitcoin prices [39]. wang et al. (2016) have analyzed the driving forces behind bitcoin prices, emphasizing the role of supply and demand dynamics and external factors in shaping bitcoin valuations [40]. makarov & schoar (2020) have investigated trading and arbitrage in cryptocurrency markets, shedding light on the price impact and market dynamics of cryptocurrencies [41]. madiche et al. (2023), in their study on crypto assets as a risk reduction tool, applied the ardl model and as a result of the study, they found an answer to the question of whether crypto assets are an independent asset class and concluded that gold and crude oil assets can be used against crypto assets as a risk hedging tool [42]. in conclusion, the factors influencing bitcoin prices are diverse and encompass a wide array of economic, technological, and regulatory elements. the interplay of supply and demand dynamics, mining costs, regulatory developments, and global events collectively shape the valuation and volatility of bitcoin. understanding these multifaceted influences is crucial for comprehending the dynamics of the cryptocurrency market and its impact on the broader financial landscape. bitcoin and other cryptocurrencies exhibit more volatility compared to conventional investing tools. the price of bitcoin fluctuates in accordance with the supply and demand dynamics on cryptocurrency exchanges. these fluctuations are noticed in each exchange as a result of variations in supply and demand. the price is determined by the investors' expectations. essentially, when there is a large demand for purchasing, the price rises, and when there is a high demand for selling, the price falls. 1 https://www.bitpanda.com/academy/tr/dersler/bitcoin-fiyatini-belirleyen-faktorler-nelerdir/( what are the factors that determine the bitcoin price?) a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 235 4. data anlysis table 1. max bitcoin price per year jan feb mar apr may jun jul agu seb oct nov dec 2010 0,1 0,1 0,2 0,2 0,5 0,3 2011 0,9 1,1 1 4,2 9,5 31,9 16,7 13,6 8,7 5,3 3,4 5 2012 7,2 6,2 5,4 5,5 5,2 6,8 9,7 15,4 12,7 13,1 12,6 13,9 2013 21,4 34,5 95,7 266 140,1 130,1 111,7 148,7 148,9 233,4 1241,9 1239,9 2014 1093,4 969,2 695,4 549 629 676,5 652,5 608,2 498,5 407,7 480,5 384,9 2015 321,4 264,6 301 261,5 247,9 268,7 315,9 285,7 246,4 334,9 492,8 467,7 2016 462,9 447,6 439 468,9 548 776 701,5 627,9 705 720,2 755,3 982,6 2017 1150,6 1211,7 1330,4 1358,9 2781,8 2985,1 2932,8 4765,1 4976,5 6467,2 11417,8 19870,6 2018 17252,8 11791,5 11506,9 9753,1 9992,8 7775 8484,6 7753,2 7409,9 7358,4 6594,3 4316,1 2019 4070,5 4194,2 4138,1 5594,4 9045,9 13929,8 13134,4 12291,9 10896,2 10540 9500,4 7702,2 2020 9569 10482,6 9180,8 9437,5 10033 10301,8 11434,8 12444,1 12045,9 14065,4 19831,2 29298,8 2021 41921,7 58335,1 61795,8 64778 59523,9 41318 42285,3 50498,8 52885,3 66967,1 68990,6 59064,3 2022 47944,9 45755,2 48199 47435 40021 31969,9 24605,3 25205,7 22702,5 21038,1 21464,7 18351,8 2023 23952,9 25236,8 29160,4 30964,9 29816,4 31395,4 31764,5 30168,6 27480,7 35191,4 38400,8 in this study, the price behavior of bitcoin over the years was analyzed based on bitcoin price data for the years 2010-2023. in the analysis, daily bitcoin opening data and the lowest and highest values reached during the day were used. however, since approximately 13 years of data were analyzed and it is not possible to display this data on a daily basis in the article, a monthly summary is included in the prepared tables for readability. bitcoin data used in the study was obtained from “investing.com”2 data archive. in this context, using the ms excel environment, the ups and downs of bitcoin over time were determined by creating pivot tables and with the help of different functions such as maximum, minimum and average in various breakdowns, and the reasons for this behavior were investigated. first of all, as can be seen below, using bitcoin data from 2010 to 2023, the maximum values reached by the bitcoin price on a yearly and monthly basis were determined by using daily price values. in this context, while the highest bitcoin price reached on a monthly basis is shown in table 1, the trend of the maximum values reached on a yearly basis is presented graphically in figure 1. fig. 1 max bitcoin price per year 2 https://www.investing.com/ 0 20000 40000 60000 80000 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 max bitcoin price per year 236 y. a. ünvan as can be seen from figure 1, bitcoin reached its highest value ever in 2021. when table 1 is examined, it is seen that the highest value on a monthly basis corresponds to november 2021. when analyzing what could be the reasons that make this behavior of bitcoin meaningful in 2021 and whether these reasons will be on a rational basis, the main effects of this year can be expressed as follows. 2021, which started in the shadow of the pandemic, was a turning point for the cryptocurrency industry. bitcoin, in particular, has become one of the popular topics even among friends, as its price reached historical peaks. as new investors stepped into the sector, blockchain, nft, defi, metaverse became among the most trending words on the agenda. so much so that statistics show that searches made with the term "bitcoin" in google search trends in many countries in 2021 have increased significantly compared to the previous year. so, when we think about what could be the real reason that makes 2021 so important for bitcoin, in 2021, bitcoin investments of corporate players and companies' plans and projects for the cryptocurrency sector came to the fore. the interest of institutions accelerated mass adoption. this pushed regulators to take action. while these regulatory studies increased the confidence of investors, new developments such as defi, nft and gamefi, which are based on blockchain technology, also had a great impact. when we look at 2021 in more detail, bitcoin's price increases with corporate investments, developments in the lightning network, el salvador's acceptance of bitcoin as its official currency, and the tesla company owned by elon musk announcing that it bought $1.5 billion worth of bitcoin. it has exceeded 50 thousand dollars. following the news that elon musk accepted bitcoin as a payment unit at tesla, bitcoin broke a new record by reaching 63 thousand dollars. bitcoin reached a record in 2021. there have been significant changes in the bitcoin price with the economic difficulties caused by covid19 in the world, historical inflation news and the fed interest rate increase signal. with the news that the fed will increase interest rates by 75 basis points on june 15, 2022, especially in connection with the highest inflation of 41 years in the usa, bitcoin gradually fell below 20 thousand 500 dollars. in this context, we can say that positive or negative bitcoin news appearing at different times plays an important role on the bitcoin price [43]. secondly, as can be seen below, using bitcoin data from 2010 to 2023, the minimum values reached by the bitcoin price on a yearly and monthly basis were determined using daily price values. in this context, while the lowest bitcoin price reached on a monthly basis is shown in table 2, the trend of the minimum values reached on a yearly basis is presented graphically in figure 2. table 2 min bitcoin price per year jan feb mar apr may jun jul agu seb oct nov dec 2010 0,10 0,00 0,10 0,00 0,10 0,20 2011 0,30 0,50 0,70 0,60 2,50 8,30 11,00 5,70 4,20 2,00 2,00 2,60 2012 4,60 3,90 4,30 4,60 4,80 5,20 6,40 7,60 9,70 9,70 10,30 12,40 2013 13,20 18,00 32,90 50,00 79,00 88,00 65,40 101,00 121,30 109,70 209,70 454,90 2014 771,00 91,70 262,80 355,70 420,20 560,80 564,00 450,00 372,60 294,90 319,80 303,40 2015 157,30 209,70 234,80 214,10 228,20 221,00 243,20 196,30 224,10 234,70 292,40 347,20 2016 350,40 365,30 386,90 412,40 435,40 521,30 605,00 471,40 569,30 606,50 670,40 741,10 2017 739,50 924,70 890,40 841,50 1.342,80 2.125,60 1.809,00 2.659,60 2.979,90 4.143,40 5.493,60 9.420,90 2018 9.271,30 5.996,60 6.603,80 6.460,10 7.069,80 5.785,30 6.088,80 5.898,30 5.977,00 6.034,90 3.634,20 3.177,00 2019 3.368,20 3.382,50 3.681,80 4.076,80 5.319,50 7.480,40 9.082,60 9.343,00 7.749,00 7.329,20 6.534,80 6.462,20 2020 6.884,10 8.451,90 3.869,50 6.157,40 8.235,60 8.865,30 8.932,10 10.730,70 9.877,10 10.387,60 13.214,20 17.600,10 2021 28.204,50 32.324,90 45.008,80 47.098,50 30.261,70 28.901,80 29.310,20 37.365,40 39.646,80 43.292,90 53.448,30 42.587,80 2022 32.985,60 34.357,40 37.182,10 37.596,00 26.500,50 17.630,50 18.794,40 19.542,90 18.191,80 18.207,90 15.504,20 16.331,20 2023 16.499,70 21.418,70 19.591,80 27.054,30 25.853,10 24.838,00 28.890,70 25.481,90 24.923,10 26.558,40 34.124,20 a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 237 fig. 2 min bitcoin price per year as can be seen from figure 2, bitcoin reached its lowest value ever in 2010. when table 2 is examined, it is seen that the lowest values on a monthly basis corresponds to nearly almost every month of 2010 (bitcoin price data has been available since july 2010.) when analyzing what could be the reasons that make this behavior of bitcoin meaningful in 2010 and whether these reasons will be on a rational basis, the main effects of this year can be expressed as follows. in fact, the main reason for this result can be explained as the fact that the recognition of a completely new product is still at a very early stage. in other words, when compared to personal shopping preferences that are still focused on physical money, such as cash, bitcoin has not yet established the trust factor, which contains many unknowns and is one of the biggest threats to financial risk. in this sense, it is not difficult to say that in 2010, bitcoin stood out as a new technology that was still in its infancy and was pregnant with many unknowns for people, institutions and countries. finally, as can be seen below, using bitcoin data from 2010 to 2023, the average values reached by the bitcoin price on a yearly and monthly basis were determined. average values are calculated based on bitcoin opening prices. in this context, while the average bitcoin price reached on a monthly basis is shown in table 3, the trend of the average values reached on a yearly basis is presented graphically in figure 3. fig. 3 avg bitcoin price per year 0 5000 10000 15000 20000 25000 30000 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 min bitcoin price per year 0 10000 20000 30000 40000 50000 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 avg bitcoin price per year 238 y. a. ünvan table 3 avg bitcoin price per year jan feb mar apr may jun jul agu seb oct nov dec 2010 0,09 0,10 0,10 0,12 0,26 0,24 2011 0,35 0,91 0,86 1,16 6,05 17,82 14,12 10,16 6,04 3,70 2,70 3,44 2012 6,10 5,13 4,90 4,98 5,06 6,00 7,85 10,92 11,56 11,76 11,44 13,34 2013 15,38 25,58 55,58 128,80 120,30 108,86 90,40 113,70 136,65 165,89 548,99 853,15 2014 931,18 528,13 583,04 465,16 479,87 616,83 618,02 540,99 449,41 364,00 364,57 343,44 2015 251,43 232,93 268,95 235,26 237,18 236,85 278,12 252,87 233,06 262,48 344,67 421,87 2016 412,88 401,50 415,62 432,35 458,76 634,94 661,71 579,57 604,59 638,57 722,67 817,00 2017 909,61 1.053,34 1.132,82 1.206,14 1.846,87 2.626,38 2.512,75 3.819,17 4.108,16 5.283,65 7.655,60 14.908,59 2018 13.119,08 9.399,63 9.087,11 7.957,13 8.494,54 6.817,81 7.087,33 6.700,65 6.607,70 6.532,36 5.525,41 3.696,13 2019 3.662,13 3.677,70 3.932,32 5.107,76 7.191,55 9.329,01 10.696,10 10.664,27 9.826,22 8.346,92 8.393,69 7.266,19 2020 8.309,39 9.664,63 6.931,63 7.137,28 9.226,49 9.492,56 9.518,90 11.628,25 10.672,66 11.790,60 16.465,84 21.683,64 2021 34.601,79 45.863,30 54.413,93 57.109,78 47.100,59 35.900,12 34.231,93 45.501,88 46.037,14 57.333,48 60.825,52 49.642,80 2022 41.342,99 40.572,10 41.882,62 41.672,03 31.885,62 24.773,65 21.423,76 22.458,34 19.815,83 19.613,05 17.704,19 16.962,23 2023 20.029,02 23.292,40 24.907,27 28.816,56 27.554,69 27.649,87 30.096,47 27.972,46 26.273,05 29.499,90 36.315,54 as can be seen from figure 3, bitcoin reached its highest average value ever in 2021. when table 1 is examined, it is seen that the highest value on a monthly basis corresponds to november 2021. in addition, bitcoin reached its lowest average value ever in 2010. when table 2 is examined, it is seen that the lowest values on a monthly basis corresponds to nearly almost every month of 2010 (bitcoin price data has been available since july 2010.) these results are consistent with the results given in the previous stage. in other words, bitcoin generally maintained the highest and lowest values it reached throughout its life during the same year. this situation shows that the price behavior mentioned in the relevant sections is generally valid for the whole year. when all three tables and graphs are examined and interpreted together, it is possible to explain the price behavior, which can be expressed with a typical supply-demand balance, under headings such as herd psychology within the scope of behavioral finance, the positive/negative effect of the media news that feeds it, and how the element of trust, which is the most important factor for financial investment, is shaped. with the increasing technological developments in recent years, access to news around the world has become easier and with this, there has been a significant increase in the number of readers. especially for people who trade bitcoin and other cryptocurrencies, news sensitivity has been effective in buying and selling activities, portfolio management, and also determining future price predictions. positive or negative news conveyed to investors by the media has caused significant changes in the price of bitcoin. government bans, taxes, hacking of cryptocurrency exchanges, scams and excessive energy consumption of cryptocurrencies, etc. just as negative news caused a decrease in the price of bitcoin, news about some important companies accepting the use of crypto money and officially accepting crypto money in their countries also led to an increase in the price of bitcoin. as an example of such news, with the news that china banned bitcoin in december 2013, bitcoin fell below a thousand dollars. then, in january 2014, zynga company started testing payment with bitcoin, which increased the bitcoin price to over a thousand dollars again. stripe, the popular payment system in the usa, opened its doors to bitcoin in february 2015. however, with the news that barclays, bbva, commonwealth bank of australia, credit suisse, jp morgan, state street, royal bank of scotland and ubs, which are among the world's leading banks, will meet to explain the transaction principles regarding bitcoin, bitcoin rose to its highest level in 2015. with the spread of news that japan and south korea officially recognized bitcoin in 2017, bitcoin broke a record and rose to 3 thousand 785 dollars in august 2017. following this news, the news that the chinese government would impose restrictions and regulations on cryptocurrency exchanges caused a decrease of nearly 34% in the bitcoin price [43]. a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 239 in addition, some examples of behavioral finance factors affecting bitcoin price behavior can be given when the data of years of 2014 and 2018 are examined. in the sixth year of bitcoin's existence (2014), the biggest leap forward came when microsoft accepted bitcoin payments. this company was the first to get big-name companies to accept the currency as a payment method [44]. as we moved from 2017 to the beginning of 2018, the price of bitcoin dropped to 10,000 usd as fear, uncertainty and doubt shook the market. this year, facebook banned the advertising of cryptocurrencies and icos on its platform. another thing that hasn't helped the situation has been rumors that south korea will ban cryptocurrencies and china will further increase restrictions that already exist. another important trend change that draws attention in the tables is the decrease in values from 2018 to 2019. a global event etc. that could cause this situation. when researched, the following news was found. timothy tam, co-founder and ceo of cryptocurrency research company coinfi in hong kong, stated that although there was no new development that would cause a sharp sale in digital currencies, he noticed a large transfer of 40 thousand ether to an exchange an hour before the drop3.tam said, “the transfer of ethereum to an exchange usually indicates an intention to sell, and if there is a sale on one exchange, its effect increases by spreading to others in a domino effect. because arbitrageurs will immediately sell it on other exchanges” [45]. in another news article on the subject, the following analysis is included.4 bitcoin has attracted attention all over the world with its serious performance in the last few days. both visual and print media brought bitcoin to the top of their agenda after these increases. naturally, this event caused many new investors to enter the cryptocurrency market. however, btc, which tested the $ 14,000 levels, fell sharply from these levels. the declines reached as low as $10,700 and bounced back to $11,000 from there. how should we interpret this decline in btc, which is currently trading at $ 11,000? big investors made profit sales. this situation, which is colloquially called "shrinkage" and generally occurs due to manipulation on stock markets or sales by big investors, has/is happening on bitcoin. large investors and institutions, called whales, negatively affected the price by selling profits on btc, which increased by 25 percent in 24 hours. small investors, who were afraid of this situation and believed that btc would drop further, started to sell their btcs. as such, the btc price fell and small investors became the ones who lost money [46]. with the end of 2013, bitcoin, which attracted worldwide attention, encountered a significant fluctuation in both its value and transaction volume. in the literature, the predictability of bitcoin returns has been examined through various parameters such as social media attention and historical technical indicators related to bitcoin. for example, the results obtained in the study where it was determined how many times the term "bitcoin" was tweeted for a certain date range revealed that the number of tweets sent could affect the btc transaction volume on the next day. in addition, in a study which explored the effect of user comments on various platforms on price fluctuations and the number of cryptocurrency transactions revealed that btc was especially associated with the number of positive comments on social media, and even obtained an accuracy rate of 79% with the granger causality test they applied, showing that consumer ideas have effect in predicting price fluctuations. as tambe (2023) stated that the decline in the cryptocurrency market in the last few years is explained by global events and their financial effects, such as the post-russiaukraine effects, the terra-luna collapse, the ftx collapse or tightened tax regulation5 3 https://www.bloomberght.com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4-bin-dolarin-altina-geriledi 4 https://tr.investing.com/news/cryptocurrency-news/bitcoin-btc-fiyat-analizi--27-haziran-2019-1896702 5 https://www.forbes.com/advisor/in/investing/cryptocurrency/why-crypto-market-is-down/ 240 y. a. ünvan [47]. ftx has been named as one of the industry crashers that caused bitcoin to fall to its lowest price since 2020. with bticoin losing more than half its value last year, singapore was hit by the collapse of stablecoin terrausd, which led hedge fund three arrows capital to file for bankruptcy, causing even more devastating damage to the crypto market. in november 2021, it saw below $ 16,0006 [48]. as a result, when the relevant data was examined, while some declines can be directly explained by specific factors such as a global event or behavioral finance factors, each change could not be matched with a rational factor that directly corresponded. in this sense, bitcoin price behavior may not always be based on a meaningful reason or basis. the main view supporting this situation is based on the personal nature of cryptocurrency itself. namely; the extraordinary fluctuations in the price of bitcoin would be considered extremely unusual for traditional financial assets, and therefore the price formations of digital currencies should have their own unique determinants. the dynamics of digital money markets consist of transactions made speculatively, not based on fundamentals, and explained his rationale as follows: it is possible to explain the changes in the prices of digital currencies satisfactorily with basic economic and financial models. while the value of traditional currencies can be explained by supply and demand dynamics and the macroeconomic variables that drive these dynamics, the supply side of cryptocurrencies is fixed or varies depending on a well-known algorithm. on the demand side, the expected profitability remains the only factor, which can only be achieved by selling the asset, because there is no cash flow (such as dividends or interest) that will be provided by holding it. in the second stage of the application, future predictions of bitcoin prices were made based on the "forecast.ets" function on the ms excel platform. while making the prediction since the data for 2010 started on july 18; in order not to disrupt the standard date range, daily data set has been included in the calculation as of 1.1.2011. details about the functions and parameters used in this application are given below. table 4 functions and parameters used in forcasting daily bitcoin price forecast.ets: calculates a future value based on existing (historical) values applying the aaa version of the exponential smoothing (ets) algorithm. the projected value is a continuation of past values at the specified target date (which must be a continuation of the timeline). forecast.ets.confint: returns a confidence interval for the forecast value on the specified target date. a 95% confidence interval means that 95% of future points are expected to fall within this radius (with normal distribution) from the outcome predicted by forecast.ets. confidence interval the confidence interval is the range (in a normal distribution) surrounding each predicted value that is expected to contain 95% of the future points based on the prediction. alpha parameter alpha parameter of the ets algorithm returns the base value parameter (a higher value gives more weight to the final data points). beta parameter the beta of the ets algorithm returns the trend value parameter (a higher value gives more weight to the recent trend). gamma parameter the gamma parameter of the ets algorithm returns the seasonality value parameter (a higher value gives more weight to the last seasonality period). mase metric returns the mean absolute scaled error metric (a measure of the accuracy of predictions). smape metric returns the symmetric mean absolute percent error metric (a measure of accuracy based on percent errors). [49] source from: https://support.microsoft.com/tr-tr/office/tahmin-ets-istat-islevi-60f2ae14-d0cf-465e-9736-625ccaaa60b4 6 https://www.reuters.com/technology/crypto-market-still-bears-scars-ftxs-collapse-2023-10-03/ https://support.microsoft.com/tr-tr/office/tahmin-ets-istat-islevi-60f2ae14-d0cf-465e-9736-625ccaaa60b4 a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 241 fig. 4 result graphic of in forcasting daily bitcoin price the statistical parameters and error metrics given in table 5 are within acceptable limits. table 5 statistical parameters calculated in the analysis alpha 0,83 beta 0,00 gamma 0,08 mase 13,67 smape 0,03 when the prediction results are compared with the bitcoin data from the beginning of 2024 to date, as a cross-check, it is seen that the predictions have reached very close values to each other as of the end of january. for this purpose, when comparing the january.2024 forecast data given in table 5 with the bitcoin data realized so far as given in figure 4, it can be said that the results are consistent. table 6 sample daily bitcoin data obtained as a result of the forecast date forcast result price lower confidence level upper confidence level 19.01.2024 37587,45864 27204,64 47970,28 20.01.2024 37535,50144 27051,60 48019,41 21.01.2024 37543,66152 26959,41 48127,91 22.01.2024 37530,26096 26846,39 48214,13 23.01.2024 37497,78389 26714,99 48280,58 24.01.2024 37398,7829 26517,75 48279,82 25.01.2024 37511,60357 26532,99 48490,22 26.01.2024 37383,36085 26307,81 48458,91 27.01.2024 37433,87098 26262,01 48605,74 28.01.2024 37449,84997 26182,29 48717,41 29.01.2024 41168,84276 29806,17 52531,51 30.01.2024 42796,13538 31338,94 54253,33 31.01.2024 42864,21725 31313,06 54415,37 242 y. a. ünvan (source from: https://tr.investing.com/crypto/bitcoin/chart) fig. 4 real bitcoin data for jan.2024 when we look at the results on a yearly basis, the situation is as given in table 7. as seen in the table, when looking at the monthly averages of the next four years for the near future, it is predicted that although there may be decreases in some months, the overall upward trend continues. however, as noted in the first part of the analysis, which is based on the actual data, bitcoin prices are sensitive to economic and global changes and bitcoin is an investment tool that is fed by consumer trends within the scope of behavioral finance. therefore, it is clear that the values obtained in the forecast will be affected by daily events and consumer behavior. table 7 yearly and monthly estimated prices for future years as a result of the forecast date min estimated price average estimated price max estimated price 2024 37.383,36 42.595,33 44.751,39 jan 37.383,36 38.034,60 42.864,22 feb 42.176,64 42.286,50 42.478,43 mar 42.233,08 42.294,35 42.328,23 apr 42.311,41 42.370,84 42.471,80 may 42.411,76 42.503,36 42.586,20 jun 42.576,31 42.716,78 42.900,98 jul 42.734,97 42.848,53 43.021,49 agu 42.863,74 43.081,29 43.295,80 sep 42.993,84 43.198,12 43.499,16 oct 42.978,86 43.457,96 43.926,31 nov 43.399,34 44.035,54 44.751,39 dec 43.962,84 44.358,73 44.737,14 2025 44.006,66 47.819,75 53.282,95 jan 44.006,66 44.553,86 45.461,23 feb 45.068,05 45.738,02 46.498,47 mar 44.910,45 45.608,31 46.159,71 apr 45.839,49 46.661,64 47.327,74 may 46.121,23 48.126,03 51.917,06 jun 49.875,18 51.431,31 53.282,95 jul 47.130,70 49.285,52 51.276,49 agu 47.515,12 48.708,40 49.839,68 sep 47.065,58 47.753,36 48.830,13 oct 47.139,74 48.197,06 48.813,51 nov 47.221,35 47.685,73 48.374,06 dec 46.642,02 49.958,93 52.092,82 https://tr.investing.com/crypto/bitcoin/chart a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 243 date min estimated price average estimated price max estimated price 2026 50.848,47 51.919,32 52.653,42 jan 51.394,12 51.683,27 51.971,77 feb 51.543,44 51.844,29 52.101,95 mar 51.665,32 51.926,25 52.179,53 apr 51.847,27 51.964,90 52.200,28 may 51.969,52 52.140,49 52.295,37 jun 52.022,80 52.255,06 52.384,05 jul 52.192,33 52.294,45 52.376,87 agu 52.154,32 52.272,07 52.653,42 sep 52.048,38 52.156,88 52.253,74 oct 51.633,88 51.891,98 52.071,31 nov 51.237,54 51.478,25 51.731,03 dec 50.848,47 51.122,41 51.383,96 2027 48.936,73 50.805,97 54.417,58 jan 50.795,59 50.992,43 51.178,10 feb 50.775,59 50.925,78 51.018,24 mar 50.689,51 50.864,04 51.142,32 apr 50.334,24 50.552,63 50.748,47 may 50.049,40 50.318,88 50.484,42 jun 49.666,56 49.918,05 50.134,60 jul 49.358,75 49.563,98 49.771,66 agu 49.091,70 49.359,38 49.539,05 sep 49.190,36 49.323,66 49.680,95 oct 48.936,73 50.185,74 54.417,58 nov 53.755,24 53.839,73 53.910,42 dec 53.786,44 53.852,19 53.897,33 5. conclusion bitcoin price fluctuation may be attributed to behavioral finance, which is a significant contributing element. conventional financial theories operate on the assumption that investors behave in a rational manner. behavioral finance is a comprehensive examination of the convictions and appraisals of investors in the actual world. it aims to uncover market outcomes in the presence of a group of investors that make irrational decisions. herd behavior, a significant concept in behavioral finance, refers to the phenomenon where investors mimic the assessments of their peers, disregarding their own judgments while making investment choices. the significance of herd behavior lies in its strong correlation with market inefficiencies and instability. the spike in cryptocurrency prices raises concerns about the presence of herd behavior in the market due to factors including volatility, the absence of an underlying asset in cryptocurrencies, and insufficient regulation of the cryptocurrency market. discovering indications of anti-herd behavior in cryptocurrency markets implies that participants in these markets lack a collective agreement or consensus. the majority of buying and selling activities involving cryptocurrencies are mostly driven by speculation, given there is no tangible asset behind these assets. hence, transactions involving cryptocurrencies cannot be seen as a conduct rooted in economic principles, like to conventional investment products [50]. the widespread usage of cryptocurrencies, particularly bitcoin, for speculative reasons is an undeniable reality. during instances of cryptocurrency price increases, a greater amount of news is generated. investors who are interested in investing in bitcoin and altcoins should consider the news related to bitcoin, which has a significant market share, 244 y. a. ünvan in order to safeguard the profitability of their investment. it is important to remember that there is a reciprocal relationship between bitcoin prices and news on bitcoin, particularly during times of price surges. similarly, the results indicated a positive correlation between the amount of news articles and times of increasing bitcoin returns. investors should also monitor this scenario closely [43]. gocmen (2022) highlights that crypto assets lack a definitive fundamental price and are highly susceptible to speculation due to the absence of economic underpinnings for calculating their intrinsic value. this leads to extreme price volatility and substantial uncertainties regarding their returns. these properties are in great demand in the industry. it is believed to initiate the construction of bubbles, as well as increase volatility and uncertainty. these qualities are believed to stimulate the building of bubbles, as well as contribute to high levels of volatility and uncertainty in the market [51]. furthermore, as highlighted by shahzad et al. (2022), the valuation of cryptocurrencies is not grounded in traditional principles [52]. gupta and chaudhary (2022) have identified a strong spill over within the different cryptocurrencies, noted especially between bitcoin and ether. in their study, a strong spillover between three virtual currencies through the dcc garch model and egarch was justified with the fact that there exists a significant interconnection within the cryptocurrency market [53]. consequently, the crypto market is highly responsive to psychological factors such as popularity, speculative and manipulative activities, economic sentiment, and fear of missing out. this susceptibility contributes to the occurrence of abrupt fluctuations in cryptocurrency prices. factors that influence the volatility and returns of cryptocurrencies like bitcoin range from economic uncertainty, gold return all the way to social media sentiment. similarly, benhamed et al. (2023) employed the gets reduction approach to evaluate the principal determinants influencing bitcoin returns and volatility and pointed out the contribution of foreign economic as well as social determinants [54]. as a result, within the scope of this study, the price behavior of bitcoin, which is the main actor of the cryptocurrency world and one of the most important financial trends of the new world, was examined. in the study, bitcoin price data from past to present was used as the basic input, and the main factors affecting the ups and downs in this data were emphasized. in the light of the findings, the herd psychology of bitcoin price behavior, which is mostly discussed within the scope of behavioral finance, and the effects of positive/negative news about bitcoin on investor confidence come to the fore. along with the behavioral finance parameters that will make bitcoin price behavior meaningful, it may not always be possible to attribute some changes in the relevant data to a specific reason. the main view supporting this situation is based on the personal nature of cryptocurrency itself. therefore, it is crucial to consider the diverse perspectives and individual motivations of investors when analyzing bitcoin's price fluctuations. in addition, although the bitcoin price predictions made within the scope of the study show a certain degree of consistency based on historical data trends up to a certain point due to the independent nature of bitcoin, it is not wrong to say that they will be subject to different effects within the framework of the above-mentioned economic changes, global events and behavioral finance elements. in the future studies, it is aimed to make a more advanced prediction based on this study including the factors that will affect bitcoin with machine learning and artificial intelligence tools. in their crypto prediction study with machine learning modeling, tiwari et al. (2021) emphasized the importance of feature engineering in cryptocurrency price prediction and stated that the model built without this engineering would decrease important performance indicators such as accuracy and auc [55]. a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 245 as stated in the estimation study conducted by saha (2023), such predictive studies have some limitations and potential sources of bias that should not be ignored. firstly, relying solely on historical cryptocurrency price data cannot fully reveal the highly volatile and dynamic behavior of the crypto market. therefore, regulatory changes, market sentiment and other external factors that are important determining factors for cryptocurrency prices are not possible to predict with only historical price data. in this sense, external data sources also need to be considered [56]. references [1] w. tong & c. jiayou, "a study of the economic impact of central bank digital currency under global competition", china economic journal, vol. 14, no. 1, pp. 78–101, 2021. [2] a. mikhaylov, "cryptocurrency market analysis from the open innovation perspective", journal of open innovation: technology, market, and complexity, vol. 6, no. 4, p. 197, 2020. [3] m. javaid, a. haleem, r. p. singh, r. suman, & s. khan, "a review of blockchain technology applications for financial services", benchcouncil transactions on benchmarks, standards and evaluations, p. 100073, 2022. [4] p. j. denning, & t. g. lewis, "bitcoins maybe; blockchains likely: the innovative foundations of the cryptocurrency may outlive the currency itself as its verification method finds applications everywhere", american scientist, vol. 105, no. 6, pp. 335–340, 2017. [5] d. yermack, is bitcoin a real currency? an economic appraisal. handbook of digital currency: bitcoin, innovation, financial instruments, and big data, chapter 2, pp. 31–43, 2015. [6] n. gandal, h. halaburda, & t. moore, "price manipulation in the bitcoin ecosystem, " journal of monetary economics, vol. 95, pp. 86–96, 2018. [7] d. stosic, d. stosic, t. b. ludermir, & t. stosic, "collective behavior of cryptocurrency price changes", physica a: statistical mechanics and its applications, vol. 507, pp. 499–509, 2018. [8] m. raskin & d. yermack, digital currencies, decentralized ledgers and the future of central banking. in research handbook on central bankingedward elgar publishing, pp. 474–486, 2018. [9] d. koutmos, "investor sentiment and bitcoin prices", review of quantitative finance and accounting, vol. 60, no. 1, pp. 1–29, 2023. [10] k. khan, j. sun, s. derindere koseoglu & a. u. rehman, "revisiting bitcoin price behavior under global economic uncertainty", sage open, vol. 11, no. 3, 2021. [11] h. jang, j.ve lee, "an empirical study on modeling and prediction of bitcoin prices with bayesian neural networks based on blockchain", information ieee access, vol. 6, pp. 5427–5437, 2018. [12] y. chen, x. xie, t. zhang, j. bai & m. hou, "a deep residual compensation extreme learning machine and applications", journal of forecasting, vol. 39, no. 6, 986–999, 2020. [13] a. a. salisu, k. isah & l. o. akanni, "improving the predictability of stock returns with bitcoin prices", the north american journal of economics and finance, vol.48, pp. 857–867, 2019. [14] v. karalevicius, n. degrande & j. de weerdt, "using sentiment analysis to predict interday bitcoin price movement", journal of risk finance, vol. 19, no. 1, pp. 56–75, 2018. [15] a. flori, "news and subjective beliefs: a bayesian approach to bitcoin investments", research in international business and finance, vol.50 (c), pp. 336–356, https://doi.org /10.1016/j.ribaf.2019.05.007, 2019. [16] t. awoke, m. rout, l. mohanty & s. c. satapathy, "bitcoin price prediction and analysis using deep learning models", in communication software and networks: proceedings of india 2019, singapore: springer singapore, 2020, pp. 631–640. [17] b. sonare, s. patil, r. pise, s. bajad, s., ballal, & y. chandre, "analysis of various machine learning and deep learning algorithms for bitcoin price prediction", 2023, https://doi.org/10.1109/raeeucci57140. 2023.10134467. [18] k. p. sharma, s. k. singh, a. choudhary & h. goel, "price prediction of bitcoin using social media activities and past trends," in proceedings of the 2023 13th international conference on cloud computing, data science & engineering (confluence), noida, india, 2023, pp. 516-521. [19] p. ciaian, m. rajčániová, & d. kancs, "the economics of bitcoin price formation", applied economics, vol. 48, no. 19, pp. 1799–1815, 2015. [20] x. yue, x. shu, x. zhu, x. du, z. yu, d. papadopoulos, & s. liu, "bitextract: interactive visualization for extracting bitcoin exchange intelligence", ieee transactions on visualization and computer graphics, vol. 25, no. 1, pp. 162–171, 2018. 246 y. a. ünvan [21] p. rane, & s. n. dhage, "systematic erudition of bitcoin price prediction using machine learning techniques", in proceedings of the 2019 5th international conference on advanced computing & communication systems (icaccs), coimbatore, india, 2019, pp. 594–598. [22] t. wood, v. basto-fernandes, e. boiten & i. yevseyeva, "systematic literature review: anti-phishing defences and their application to before-the-click phishing email detection", arxiv preprint arxiv:2204.13054, 2022. [23] d. vidal-tomás, "an investigation of cryptocurrency data: the market that never sleeps", quantitative finance, vol. 21, no. 12, pp. 2007–2024, 2021. [24] m. gronwald, "the economics of bitcoins-market characteristics and price jumps", cesifo working paper series no. 5121, available at ssrn: https://ssrn.com/abstract=2548999 or http://dx.doi.org/ 10.2139/ssrn.2548999, december 29, 2014. [25] i. sibel kervanci, & f. e. akay, "review on bitcoin price prediction using machine learning and statistical methods", sakarya university journal of computer and information sciences, 2020. [26] z. tong, z. chen, & c. zhu, "nonlinear dynamics analysis of cryptocurrency price fluctuations based on bitcoin", finance research letters, vol. 47, pp. 102803–102803, 2022. [27] l. kristoufek, "bitcoin meets google trends and wikipedia: quantifying the relationship between phenomena of the internet era", nature scientific reports, vol. 3, p. 3415, 2013. [28] l. ante, "how elon musk’s twitter activity moves cryptocurrency markets", technological forecasting and social change, vol. 186, pp. 122112–122112, 2023. [29] c. tandon, s. revankar, h. palivela, & s. s. parihar, "how can we predict the impact of the social media messages on the value of cryptocurrency?", insights from big data analytics, vol. 1, no. 2, pp. 100035– 100035, 2021. [30] e. bouri, r. gupta, a. lahiani & m. shahbaz, "testing for asymmetric nonlinear short-and long-run relationships between bitcoin, aggregate commodity and gold prices", resources policy, 2018. [31] h. guo, d. zhang, s. liu, l. wang, & y. ding, "bitcoin price forecasting: a perspective of underlying blockchain transactions", decision support systems, vol. 151, p. 113650, 2021. [32] a.k. coulter, "the impact of news media on bitcoin prices: modelling data driven discourses in the cryptoeconomy with natural language processing", royal society open science, vol. 9, no. 4, 2022. [33] a. h. de vries, "bitcoin boom: what rising prices mean for the network’s energy consumption", joule, vol. 5, no. 3, pp. 509–513, 2021. [34] j. griffin and a. shams, "is bitcoin really untethered?", the journal of finance, vol. 75, no. 4, pp. 1913–1964. [35] h. kavitha, u.k. sinha, & s. jain, s, "performance evaluation of machine learning algorithms for bitcoin price prediction", in proceedings of the 2020 fourth international conference on inventive systems and control (icisc), 2020. [36] n. sapkota, "news-based sentiment and bitcoin volatility. international review of financial analysis", 82. https://doi.org/10.1016/j.irfa.2022.102183, 2022. [37] “what are the factors that determine the bitcoin price?)”, (access date: december, 2023), accessed from https://www.bitpanda.com/academy/tr/dersler/bitcoin-fiyatini-belirleyen-faktorler-nelerdir/ [38] s. zaman, u. yaqub, & t. saleem, "analysis of bitcoin’s price spike in context of elon musk’s twitter activity", global knowledge, memory and communication, vol. 72, no. 4/5, pp. 341–355, 2023. [39] z. wu, and d. wang, "study of the impact of chinese policies and regulations on bitcoin", in proceedings of the 2022 4th international conference on economic management and cultural industry (icemci 2022), 2022, pp. 344–351. [40] j. wang, y. xue, & m. liu, "an analysis of bitcoin price based on vec model", in proceedings of the international conference on economics and management innovations, atlantis press, 2016, july, pp. 180–186. [41] i. makarov, & a. schoar, "trading and arbitrage in cryptocurrency markets", journal of financial economics, vol. 135, no. 2, pp. 293–319, 2020. [42] c. v. madichie, f. n. ngwu, e. a. eze, & o. d. maduka, "modelling the dynamics of cryptocurrency prices for risk hedging: the case of bitcoin, ethereum, and litecoin", vol. 11, no. 1, 2023. [43] m. songur, & s. ordu, "the effect of bitcoin news on bitcoin price and return", bingöl university journal of social sciences institute, vol. 25, pp. 220–234, 2023. [44] "bitcoin max price", (access date: december, 2023), accessed from https://paxful.com/university/ tr/bitcoin-en-yuksek-fiyati/. [45] "cryptocurrencies fell hard bitcoin dropped below 4 thousand dollars", (access date: december, 2023), accessed from https://www.bloomberght.com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4bin-dolarin-altina-geriledi [46] "bitcoin (btc) price analysis", access date: december, 2023, accessed from https://tr.investing.com/ news/cryptocurrency-news/bitcoin-btc-fiyat-analizi--27-haziran-2019-1896702 https://paxful.com/university/tr/bitcoin-en-yuksek-fiyati/ https://paxful.com/university/tr/bitcoin-en-yuksek-fiyati/ https://www.bloomberght.com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4-bin-dolarin-altina-geriledi https://www.bloomberght.com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4-bin-dolarin-altina-geriledi a study on bitcoin price behaviour with analysis of daıly bıtcoın prıce data 247 [47] tambe, n. (2023), "why is the crypto market down in october 2023?", access date: december, 2023, accessed from https://www.forbes.com/advisor/in/investing/cryptocurrency/why-crypto-market-is-down/ [48] "a history of bitcoin's all-time highs", access date: december, 2023, accessed from https://www.bloomberght. com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4-bin-dolarin-altina-geriledi [49] "forecast.ets.stat function", access date: december, 2023, accessed from https://support. microsoft.com/tr-tr/office/tahmin-ets-istat-islevi-60f2ae14-d0cf-465e-9736-625ccaaa60b4 [50] h. t. akkuş, i̇. çelik, & t. karakaya, "analysis of herd behavior in crypto currency markets: new evidence from the largest crypto currencies", journal of finance, economics and social research, vol. 8, no. 1, pp. 107–120, 2023. [51] g. göçmen yağcılar, "kripto para piyasasında fiyat balonları ve yatırımcı i̇lgisinin etkisi (price bubbles and the impact of investor interest in the cryptocurrency market)", mehmet akif ersoy üniversitesi journal of applied sciences, vol. 6, no. 1, pp. 108–131, 2022. [52] s. j. h. shahzad, m. anas, & e. bouri, "price explosiveness in cryptocurrencies and elon musk’s tweets", finance research letters, 2022. [53] h. gupta, r. & chaudhary, "an empirical study of volatility in cryptocurrency market", journal of risk and financial management, vol. 15, no. 11, p. 513, 2022. [54] a. benhamed, a.s. messai, & g. el montasser, "on the determinants of bitcoin returns and volatility: what we get from gets?," sustainability, vol. 15, no. 3, p. 1761, 2023. [55] r. k. tiwari, a. k. agarwal, r. kaushal, & n. kumar, "prophetic analysis of bitcoin price using machine learning approaches", 2021. [56] v. saha, "predicting future cryptocurrency prices using machine learning algorithms", journal of data analysis and information processing, vol. 11, pp. 400–419, 2016. https://www.forbes.com/advisor/in/investing/cryptocurrency/why-crypto-market-is-down/ https://www.bloomberght.com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4-bin-dolarin-altina-geriledi https://www.bloomberght.com/kripto/haber/2187994-kripto-paralar-sert-dustu-bitcoin-4-bin-dolarin-altina-geriledi 13315 facta universitatis series: electronics and energetics vol. 38, no 1, march 2025, pp. 163 186 https://doi.org/10.2298/fuee2501163m © 2025 by university of niš, serbia | creative commons license: cc by-nc-nd original scientific paper nanotechnology qca-based sub-components of processor design and application of futuristic low-power design neeraj kumar misra1, nirupma pathak2, bandan kumar bhoi3, seyed-sajad ahmadpour4, sankit r. kassa5, nima jafari navimipour4,6 1school of electronics engineering, vit-ap university, amaravati, andhra pradesh 522237, india 2department of computer science and engineering, koneru lakshmaiah education foundation, green fields, guntur district, vaddeswaram, andhra pradesh, 522502, india 3department of electronics and telecommunication, veer surendra sai university of technology, burla, sambalpur 768018, odisha, india 4department of computer engineering, faculty of engineering and natural sciences, kadir has university, istanbul, turkey 5electronics and telecommunication engineering, symbiosis institute of technology pune, symbiosis international deemed university, pune, maharashtra 6future technology research center, national yunlin university of science and technology, douliou, 64002, taiwan orcid ids: neeraj kumar misra https://orcid.org/0000-0002-7907-0276 nirupma pathak https://orcid.org/0000-0003-3441-5987 bandan kumar bhoi https://orcid.org/0000-0003-2916-2903 seyed-sajad ahmadpour https://orcid.org/0000-0003-2462-8030 sankit r kassa https://orcid.org/0000-0002-8714-2073 nima jafari navimipour https://orcid.org/0000-0003-3259-6841 abstract. many devices consist of low-power processor. quantum-dot-cellular-automata (qca) based processor designs provide enhanced performance compared with conventional metal-oxide-semiconductor (mos) based processors. nanocomputing-based processors are often energy-efficient. we have developed nanotechnology qca-based different subcomponents of processor such as 2-to-4 decoder, 3-to-8 decoder, delay flip-flop (d-ff), and sequence counter. a potential energy proof has been measured in the 2-to-4 decoder design. the synthesis approach algorithm has been presented for all designs. further, the potential energy calculation results show for 2-to-4 decoder. according to the synthesis results 2-to-4 decoder has improved 82.3% cell count, 86% area, and 85% latency over previous work. comparing the primitive results with the prior one, results improved by 64% and 76% in terms of cell count and area in the design of the 3-to-8 decoder. among the different components of the processor is d-ff, which has an improvement of 66.37% in cell counts and 62.5% in area over the prior design. primitive results have improved, including latency, cell count, and area, showing the proposed processor design is comparable to lowpower devices and high speed. in terms of balance power, the proposed subcomponent of the processor will benefit low power device. received december 7, 2024; revised january 19, 2025 and january 24, 2025; accepted january 26, 2025 corresponding author: neeraj kumar misra school of electronics engineering, vit-ap university, amaravati, andhra pradesh 522237, india. e-mail: neeraj.misra@vitap.ac.in https://orcid.org/0000-0002-7907-0276 https://orcid.org/0000-0003-3441-5987 https://orcid.org/0000-0003-2916-2903 https://orcid.org/0000-0003-2462-8030 https://orcid.org/0000-0002-8714-2073 https://orcid.org/0000-0003-3259-6841 mailto:neeraj.misra@vitap.ac.in 164 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour key words: qca, computing, processor, sequence counter, decoder, nanotechnology, algorithm, low power 1. introduction a low-power device has a processor that can calculate logic bits in real time [1]. a processor is usually embedded within most devices, along with wi-fi, memory, and peripherals that perform various tasks. in low-power devices, arm cortex-m processors are used, which consume less power than traditional arm processors [2]. the cortex-m series of arm processors has an inbuilt processor, which is based on transistors. the mos transistor has a number of limitations, such as hot carrier effects and tunnelling, which affect the performance of the processor during computations [3]. it is a conventional cmos-based decoder which requires a certain amount of time for active charge or discharge to occur. during the era of qca field computing based computing, the decoder directly interacts between the quantum cells that creates polarization and the signal propagates to the outputs node with a lower latency. the development of new technologies, such as nanocomputing, therefore resulted in alternative technologies emerging. qca technology is growing in popularity in this emerging era as a result of high-speed computing, nanotechnology based and energy efficient. it is important to note that cmos devices provide semiconductor-based computing functions on a micro level in the vlsi domain. the advantage of nanocomputing is, however, that it is an emerging technology, especially when it comes to fast computing and high-performance systems [4]. the layout of cmos technology is not incredibly useful, due to its limitations such as short channel effect and hot carrier effect [4]. it is also important to note that the compact layout of qca, combined with the use of nanoscale, reduces the processing time and the interconnection delays. in the field of nanocomputing, qca is emerging as one of the most promising emerging areas. it was first developed by researchers at the university of notre dame in the 1960s [5]. qca layout design focuses mainly on designing the majority of gates at the bottom level, and then it converts to nanotechnology-based quantum cells for layout [6]. based on the coulomb interaction (the force of attraction between electronics) between neighbouring cells. the qca cells are evaluated to determine the influence of polarization on electron behaviour and then the computation is made [7]. in this paper, we propose new subcomponents of a processor using algorithms, such as 2-to-4 decoder, 3-to-8 decoder, d-ffs, and sequence counters, which are robust in layout and fast computing. the existing work in [8-16] shows only a design without considering potential energy physical proof, whereas the current work focuses on a robust design of 2-to-4 decoders with potential energy physical proof by mathematical equations. similar to the proposed sequence counter, it uses fewer majority gates and without crossover so that it has a lower latency and a higher computing speed. the proposed counter is more energy-efficient because fewer cells are used and there is a smaller area involved. in addition to being more robust in terms of area and computation speed. there is a key point that can be pointed out regarding the workaround proposed subcomponent of the processor which is summarized as follows: ▪ a different subcomponent of the processor layout is targeted in nanocomputing-based qca. ▪ design 2-to-4 and 3-to-8 decoders have been implemented in qca technology. nanotechnology qca-based sub-components of processor design and application... 165 ▪ the sequential d-ff implementation and verification are presented using qcadesigner. ▪ a sequence counter layout has been presented in qca using a coplanar layout. ▪ first time in literature, potential energy calculation is explicitly proven in the design of a 2-to-4 decoder. ▪ using the comparison tables, the layout design of the 2-to-4 decoder, 3-to-8 decoder, d-ff, and sequence counter are determined as superior. ▪ an energy dissipation study of a 2-to-4 decoder circuit has been carried out successfully. ▪ the complete algorithm has been presented for the synthesis of the n-to-2n decoder and sequence counter. the article is organized as follows: section 2 provides an overview of qca technology. a brief literature review of related qca-based existing work is presented in section 3. in section 4, we present improved qca-based 2-to-4 decoder, 3-to-8 decoder, d-ff, sequence counter layouts, energy estimation of 2-to-4 decoders, and potential energy calculation for 2-to-4 decoders with various subsections. we compare and evaluate the performance attributes of qca designs with those of the energy dissipation study in section 5. in section 6, we conclude the presented study. 2. preliminaries the objective of the section is to present the existing state-of-the-art work in the design of decoders, d-ffs, and sequence counters, as well as their pros and cons. many designs and architectures have been proposed for efficient decoders circuits based on nanotechnology, which includes decoders [8-16], d-ff [17-19], and counter design [2025] in the category of qca circuits based on nanotechnology. numerous studies have been published in the literature concerning the design of synchronous counters [20-25]. as part of the present existing decoder design used mg and inv with fewer wire cells and fewer clocks in the design [8-11]. several optimized designs of counters based on area, delay, and cell count are available in the literature [20-25]. the decoder modules in reference [11] were based on coplanar cells and utilized 200 cells with a 0.22 um2 area and 3 latency. a reference [11] has been published that analyzes the energy dissipation of the proposed design using the qcapro tool. due to the long wires in the design and the fact that there are more majority gates (mg), there is an increase in latency. the d-ffs and counters in the design of the decoder provide no crossovers and no rotated cells, so a reduction in latency can be achieved, as well as high computation speed. the existing design of the decoder [8] uses the coplanar technique to optimize and reduce the latency to achieve a compact design of the decoder. due to the crossing of wires, the latency is increased, as well as the number of clocks. based on the existing work, it uses a cell count of 212, an area of 0.25, and a latency of 4. in the existing work, mv flip flops [17,18,19] are used with rotated cells, inv to compact the size, however, due to the rotation of the cells, the design requires more clocks. in addition to this, the design of dff has an inv that is not robust which increases the area of the design as well as the computational delay. the existing work [14] deals with decoding as well as memory cell layout using direct connections and symmetrical connections. look-up table implementations of decoders are the subject of this work. 166 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour table 1 review of the existing work existing work methodology pros and cons technology used [11] qca based decoder the use of long wires increases latency when there are more clocks. the designer has used a coplanar to make fabrication easier. nanotechnology [12] qca based decoders a modular decoder is being studied in existing work using rotated cell types with a crossing approach. nanotechnology [14] qca-based decoder, and memory element based on look-up table this existing work was to develop a decoder that uses direct connection and symmetrical connection modes. a further investigation demonstrates the use of a look-up table to generate a complete layout using a decoder, memory, and or tree. nanotechnology [16] qca based decoders it deals with the decoder types 2-to-4 and 3-to-8 using mg because mg and inv are more common in the design of qca's, despite the fact that the design is not optimal due to the higher cell count. nanotechnology [19] qca based d-ff using a rotated cell type, a robust qca d flop flop was designed. the robust cell-based mg was used to achieve this. there is a large number of cells in mg, so the design is not compact due to the large number of cells. nanotechnology [25] qca based synchronous counter in this novel 3-bit synchronous counter, the mg and iv are employed, but the design is not optimal in terms of performance. the presented work discusses the design of synchronized negative edge-triggered 3-bit circuits. nanotechnology in addition, the entire layout was designed using look-up tables. this layout view shows a decoder on top, a memory in the middle, and an or tree on the bottom. as part of this work, a clb-based layout architecture is also discussed. a nanotechnology approach-based quantum dot layout is further used to simulate all the 4 to 16 decoders, memory, and lut and clb blocks. in the published work [12], authors have target with a modular decoder that uses rotated cells with a crossing approach, but the crossing cells create a higher latency due to more delay. additionally, the design of the 3-to-8 decoder is based on the implementation of the 2-to-4 decoder. as a result of the long length of the wires, it takes a lot more time and information to transfer from the input node to the output node. it is worth noting that the design is not robust and the design of a 2to-4 decoder takes 4 mg, while the design of a 3-to-8 decoder takes 8 mg. according to the design of the 2 to 4 decoder and the 3 to 8 decoder, the clock phases are 7, and 11, respectively. the literature review work is presented in table 1. 3. related work qca is a system that consists of cells made up of electrons [9]. it is important to understand that qca is a complex network of interconnected cells that interact with each other to form a polarization value used to store information. one of the most significant differences between and gates and or gates relates to the value of polarization. in fig 1a, nanotechnology qca-based sub-components of processor design and application... 167 we can see the polarization value. using polarization, electrons are adjusted to fit within the diagonals of the cell so that we can represent and gate and or gate as shown in fig 1b. this results in the and gate having -1 polarization, which represents binary '0', and the or gate having +1 polarization, which represents binary '1' [10]. (a) (b) (c) fig. 1 qca glance (a) polarization (b) and, or, majority gate (c) inverter, minority, nor, nand the majority gate has been designed with 3 inputs, 5 inputs, 9 inputs [11]. the 3input majority gate (mg) design is the fundamental design to understand majority gates as shown in fig 1b. this design uses three inputs a, b, and c to design the mg. as its name suggests, it works based on the majority of inputs. when the inputs a, b, and c are polarized in the majority, the centre cell, is called the driver cell. the expression for mg as m (a, b, c) = ab + bc + ca. hence, any input has worked as a polarization concept based on the following equation: m (a, b, 0) = ab + b*0 + 0*a=ab. polarization ‘-1’ works similarly to store binary ‘0’. as a result, substituting in the majority gate equation gives the result as and gate. therefore, if we give polarization ‘-1’, the majority gate behaves like an and gate. the same is true when you give 1 polarization. taking an example, we can consider c as the polarization input; m (a, b, 1) = ab + b*1 +1*a= ab + b + a=a+b. here, ‘1’ polarization is given as input then as shown above it works as or gate. hence, when polarization is 1 then the majority gate works like or gate. in the cmos-based inverter, the behaviour of the output is the opposite of the input. similar to qca designers, we also make use of inverters. in the case where two cells are kept diagonally close to each other, then we will get an output that is opposite to the input as shown in fig 1c. by using this method, we can design different circuits that can be used in a variety of different designs. the following is a list of some of the designs that can be found for an inverter and others. the design of nand and nor is depicted in fig 1c. in 168 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour the qca designer, there are three types of wiring as mentioned 90-degree wiring, 45degree wiring and 45 and 90-degree wiring as shown in fig. 2a, 2b, and 2c, respectively. (a) (b) (c) (d) (e) fig. 2 qca wiring (a) 90-degree wiring (b) 45-degree wiring (c) 45 and 90-degree wiring (d) horizontal translation (e) vertical translation in qca design the 90-degree wiring is shown in fig 2a. this is similar to that of wire, which shows the propagation of binary value through the length of the wire. the propagation of input is from left to right. the left end will be provided with the input and the right end will be the output. the above shown fig 2a is a horizontal 90-degree wiring. if we want an inverter in this 90-degree wiring we should keep two cells oriented diagonally with 90-degree wiring as shown in fig 2c. in this 45-degree wiring, the value has been propagating information flow from the length of the wire. the advantage of this wiring is we can get both outputs (same as well as inverted). all the even places will give us the complemented output in a 45-degree wire. to get the output we should place a 90degree oriented cell to the even place. to get the same value we need to place a 90degree oriented cell at the odd place. in the rotate wire concept, we use it to rotate the cell to get inverted as well as the same output. that is the cell’s electrons get rotated into a 45-degree orientation. in this design, it is easy to get inverted output by using the rotate concept without the need to use an explicit inverter. there are two ways to translate qca design: horizontally and vertically. the translate option is used in the qca designer tool when we put position a/2, where a is the wire's length. cells in the qca design have a default width and height of 18. when the translate option is used (18nm/2 = 9nm), the width and height are changed as shown in fig 2d, 2e, respectively. in qcadesigner, the blue colour cells represent input, the yellow colour cells represent output, the green colour represents clock 0, the pink colour represents clock 1, the light green colour represents clock 2, and the white colour represents clock 3. field coupling qca technology uses four types of clocks to flow information [12]. the clocking functionality of qca designer plays a major role [13]. the clocking process consists of four stages, namely switch, hold, release, and relax [14]. in qca designing, clocking is used when crossing occurs, so that the majority gate receives the same input. when crossing occurs, we can obtain the same information by changing the clocks. qcapro used the kink energy to estimate the low and high energy dissipation values. quantum dot cellular automata pro (qcapro) is used to determine the power dissipation or the energy dissipation of qca cells [15]. as part of the qcapro, four types of colour coding have been implemented: black colour – this colour indicates that cells in the qca layout dissipate the most power, orange colour nanotechnology qca-based sub-components of processor design and application... 169 – this colour indicates that cells in the qca layout dissipate medium power, and yellow colour – this colour indicates that cells in the qca layout dissipate the least power [16]. molecular qca can be used in nanoscale computing devices which are based on qca [3]. there are four phases used in the qca clocking zone which are switch, hold, release, and relax. as all of the clocking zones are synchronized in a manner that makes design both reliable and fast, each clocking zone is synchronized. in a cell, polarization is governed by the amount of energy associated with the polarization of the cell. a polarization measurement with four dots can be defined by equation (1) 1 3 2 4 1 2 3 4 ( ) ( ) p         + − + = + + + (1) in the era of low-power devices. the processor is the main device in computing devices for processing data bits and is used for a variety of emerging applications in the home to advance scientific research [1]. the processor is an integral part of compact devices, such as thermostats, smart appliances, microcontrollers and wearable devices [1]. when the processor device balances low-power designs, the system's performance increases [2]. a low-power balanced processor is used in this scenario to achieve high-performance computations at low power consumption. in most communication devices, built-in modules include wi-fi, bluetooth, and a wi-fi port so that servers can be connected, as well as heterogeneous and homogeneous networks, sensors and actuators, alexa-enabled devices, mobile devices, and zigbee devices. iot devices use mqtt (message queuing telemetry transport), coap (constrained application protocol), and http for communication and connectivity [2]. fig. 3 shows the complete detailed connectivity for iot devices and many other low-power computing devices. fig. 3 iot connectivity with processor [26] 170 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour 4. the proposed layout of the subcomponent of the processor central processing units (cpu) are controlled by their processors, which are the brains of computers [1]. we have designed various sub-components of processors in this paper. it is shown in the block diagram of the processor that there are different modules. module 1 consists of the design of a 2-to-4 decoder, module 2 consists of the design of a 3-to-8 decoder, and module 3 consists of the sequence counter as shown in fig 4a. as a work of this paper, a potential energy estimation and layout design have been presented for a 2-to-4 decoder. we have implemented a robust layout of 3-to-8 decoder, d-ff and sequence counter with the help of the proposed algorithm in this section. with the help of instruction registers, a multiplexer combines these modules and performs processor computations. the block diagram of the processor with its subcomponents is shown in fig 4a. fig 4b shows the complete layout flow with a qca-based layout for each processor subcomponent. with the use of bottom to top approach, we have created the design flow of how higher-level subcomponents have been used for the processor design as shown in fig 4b. 15 14 13 12 2 to 4 decoder 3 to 8 decoder sequence counter control logic gate i subcomponent-1 subcomponent-2 subcomponent-3 control outputs (a) (b) fig. 4 the processor (a) the block diagram of a processor (b) subcomponent view in qca processor nanotechnology qca-based sub-components of processor design and application... 171 4.2. the proposed subcomponent 2 to 4 decoder in this section, we have explained how to implement a 2-to-4 decoder using qca designer in the nanocomputing framework. we know that a decoder takes n inputs and produces 2^n outputs. the output consists of binary data represented by each node. there are many applications for decoders in the digital world, including memory addressing, data multiplexing without select line, cpu design as part of a control unit, and display functions with a seven-segment display. there are several benefits to the design of a 2-to-4 decoder layout in qca, one of which is a high level of performance and high computing speed as a result of the layout. it is for this reason that qca makes use of a quantum-dot architecture that encodes binary states by using polarization in cells rather than voltage to encode binary states. the signal flow through the wires is synchronized with the help of clocking zones that allow the flow of signals through wires. we develop decoders using the coplanar technology-based qca in this paper. the concept presented here uses a coplanar technique to implement 2-to-4 decoders in qca designer. to create four majority gates, the qca layout for this design uses expressions used for the 2-to-4 decoders. in our bottom-to-top approach, the first step is to obtain expressions from the truth table using k-maps to get the expressions from the truth table. the next step involves drawing a block diagram with a majority gate. when using the qca designer tool, a layout is created by using four majority gates. this layout is designed using four majority gates. additionally, the amount of cells used in this decoder layout is much lower than in other decoder layouts in the literature. expressions for the 2 to 4 decoder are as follows in equations 2, 3, 4 and 5 y3 m( , , ) m( , ,0) .a b c a b a b= = =  (2) similarly, y2 = m( , , ) m( , ,0) .a b c a b a b= =  (3) similarly, y1 = m( , , ) m( , ,0) .a b c a b a b= =  (4) similarly, y0 = m( , , ) m( , ,0) .a b c a b a b= =  (5) by using the qca designer tool version 2.0.3, we can simulate the 2to-4 decoder. the bi-stable approximation is selected during the setup of the simulation engine to obtain simulation outputs. the block diagram, layout and simulation results for the 2-to-4 decoder, implemented in the nanotechnology-based tool qca, as shown in fig 5a, 5b and 1 a b -1 -1 -1 -1 maj-1 maj-2 maj-3 maj-4 y3 y2 y1 y0 (a) (b) (c) fig. 5 design of 2 to 4 decoder (a) block diagram (b) layout (c) outputs 172 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour 5c, respectively. in qcadesigner, a vector table is created using the inputs of the truth table, and the outputs are shown in fig 5c. 4.3. potential energy calculation in decoder design this section presents potential energy dissipation analysis due to cell interaction in the design of a 2-to-4 decoder. the logic computation in qca is based on cell interaction, and each cell interacts based on polarization. a bistable approximation has been selected as the default simulation engine in the qcadesigner tool. the 2-to-4 decoder design has physical proof showing the measurement of potential energy with the target cell and radius of effect (65nm). using qca technology, the potential energy of a design has been calculated by considering the surrounding environment as shown in equation (2). in the default setting in the bistable approximation engine, the default cell size is 18nm in length and 18nm in breadth. the distance between adjacent cells is 2 nm and the radius of effect is 65nm by default setting. in each cell, there is a square shape of the cell with a dimension of 18x18nm. an important aspect when calculating potential energy is the consideration of the positive and negative polarization of cells (p=-1 and p=+1). fig 6 shows the flow of the total potential energy calculation. fig 7 shows all electron positions on cell-1, as shown in (x1, y1) and (x2, y2). affected cells are indicated by the x and y symbols. accordingly, if we consider the positive or negative polarization of cell-1 to be 1 or +1, then the positions of the electrons will be (x1, y1) or (x2, y2). it is important to note that when the polarization of cell-1 is -1, the positions of the electrons are (x1, y1). in the case where the polarization of cell-1 is + 1, the electrons' positions are (x2, y2). depending on the radius of the effect range of cells x and y, neighbour cell x affects neighbour cell y. the marked electron on the cell is labelled from e1 to e6 as in the expanded form e1e2, e3e4, e5e6. when polarization p = +1 is considered, the orientation of electrons (x2, y2). there are also six possible e1 to e6 with x2 and e1 to e6 with y2. in this section, all calculations with positive and negative polarization values are presented along with all physical evidence (x1, y1) and (x2, y2). all the potential energy proof are presented in equation (7)(12) 1 2 ( )kq q p let u d d = = (6) 9 19 19 291 2 (9 10 ) (1.6 10 ) (1.6 10 ) 23.04 10p kq q x x x x x x− − −= = = (7) 1 m total pp u sum of all potential energy u = = =  (8) 2323.04 10 ( ) p x u in one cell d d − = = (9) consider the electron's orientation (x1, y1) at polarization p = −1. there are six possible states associated with x1 and y1 as shown below. 23 21 1 1 9 23.04 10 10.47 10 22 10 e x p x u x x − − − = = = , 23 21 2 1 9 23.04 10 5.04 10 42 10 e x p x u x x − − − = = = , nanotechnology qca-based sub-components of processor design and application... 173 23 21 3 1 9 23.04 10 8.07 10 24 10 e x p x u x x − − − = = = , 23 21 4 1 9 23.04 10 115.2 10 2 10 e x p x u x x − − − = = = , 23 21 5 1 9 23.04 10 10.47 10 22 10 e x p x u x x − − − = = = , 23 21 6 1 9 23.04 10 5.24 10 42 10 e x p x u x x − − − = = = , 6 20 1 1 1 2 1 3 1 4 1 5 1 6 1 1 13.63 10 m ex e x e x e x e x e x e x m u u u u u u u x = − = = + + + + + = 23 21 1 1 9 23.04 10 5.03 10 42 10 e y p x u x x − − − = = = , 23 21 2 1 9 23.04 10 3.96 10 58 10 e y p x u x x − − − = = = , 23 21 3 1 9 23.04 10 5.98 10 37 10 e y p x u x x − − − = = = , 23 21 4 1 9 23.04 10 8.07 10 22 10 e y p x u x x − − − = = = , 23 21 5 1 9 23.04 10 12.72 10 18 10 e y p x u x x − − − = = = , 23 21 6 1 9 23.04 10 10.47 10 22 10 e y p x u x x − − − = = = 6 20 1 1 1 2 1 3 1 4 1 5 1 6 11 3.78 10 m ey e y e y e y e y e y e ym u u u u u u u x = − = = + + + + + = (10) for considering the polarization value of p=-1. the first step is to calculate ue1x1, ue2x1, ue3x1, ue4x1, ue5x1, ue6x1, then we calculate ue1y1, ue2y1, ue3y1, ue4x1, ue5x1, ue6y1. after that, add both potential energies. 20 20 20 1 1 13.63 10 3.78 10 17.41 10ex eyu u x x x− − −+ = + = (11) at polarization p=+1, the electron is in the direction of polarization (x2, y2). below is a list of six possible states that can be associated with x2 and y2 as shown in the illustration. 23 21 1 2 9 23.04 10 5.03 10 42 10 e x p x u x x − − − = = = , 23 21 2 2 9 23.04 10 3.48 10 64 10 e x p x u x x − − − = = = , 23 21 3 2 9 23.04 10 11.5 10 20 10 e x p x u x x − − − = = = , 23 21 4 2 9 23.04 10 12.98 10 18 10 e x p x u x x − − − = = = , 23 21 5 2 9 23.04 10 10.47 10 22 10 e x p x u x x − − − = = = , 23 21 6 2 9 23.04 10 6.06 10 38 10 e x p x u x x − − − = = = , 6 20 2 1 2 2 2 3 2 4 2 5 2 6 2 1 3.78 10 m ex e x e x e x e x e x e x m u u u u u u u x = − = = + + + + + = 23 21 1 2 9 23.04 10 8.78 10 24 10 e y p x u x x − − − = = = , 23 21 2 2 9 23.04 10 5.03 10 42 10 e y p x u x x − − − = = = , 23 21 3 2 9 23.04 10 5.78 10 41 10 e y p x u x x − − − = = = , 23 21 4 2 9 23.04 10 11.52 10 20 10 e y p x u x x − − − = = = , 23 21 5 2 9 23.04 10 115.1 10 2 10 e y p x u x x − − − = = = , 23 21 6 2 9 23.04 10 9.02 10 24 10 e y p x u x x − − − = = = , 174 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour 6 20 2 1 2 2 2 3 2 4 2 5 2 6 21 16.4 10 m ey e y e y e y e y e y e ym u u u u u u u x = − = = + + + + + = (11) as a result, p=+1 is taken into consideration for the polarization value. first, it is necessary to determine ue1x2, ue2x2, ue3x2, ue4x2, ue5x2, ue6x2, then we will calculate ue1y2, ue2y2, ue3y2, ue4x2, ue5x2, ue6y2. to calculate their potential energy, add them both together. 20 20 20 2 2 3.78 10 16.4 10 20.28 10ex eyu u x x x− − −+ = + = (12) fig. 6 method to calculate combined potential energies 20nm 18nm e1 e2 1 e3 e4x1 x2 y1 y2 e5 e6 x y fig. 7 energy calculation in the proposed 2-to-4 decoder nanotechnology qca-based sub-components of processor design and application... 175 4.4. subcomponent 3to8 decoder in this section, a 3-to-8 decoding design using a qca designer is proposed. we have designed the expressions of 3-to-8 decoders using the k-map function. the design does not have a 45-degree orientation due to more polarization change and slow computation. the design of a 3to8 decoder involves the use of 90-degree oriented wires. in this design, using a 45-degree wire has the disadvantage of increasing the circuit's vertical length (i.e., the circuit will require more space) due to its use of a 45-degree wire. fig. 8 shows the block diagram of the majority gate design of the 3-to-8 decoder. we demonstrate how the qca designer tool was used to simulate and verify the layout's functionality. fig. 9a and 9b show a layout design and simulation output using field coupling nanotechnologybased qca. according to the algorithm-1 presented in the case of n-to-2n decoder and taken the example of 3-to-8 in the assumption that the binary input is i=011 (where i2=0, i1=1, i0=1). first go to step-1, if the binary input is i=011 and convert into decimal d=0⋅22+1⋅21+1⋅20=0+2+1=3. there is only one active line in step 2 when measuring y3 = 1. as a result of the decoder output, there is a display showing [00010000]. the same approach would likely apply to n-to-2n decoding as well. 1− 1− 1− 1− 1− 1− 1− 1− 1− 1− 1− 1− 2y 0y a b c 4y 2y 6y 3y 5y 2y maj1 maj2 maj3 maj4 maj5 maj6 maj7 maj8 maj9 maj10 maj11 maj12 fig. 8 block diagram of 3-to-8 decoder 176 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour (a) (b) fig. 9 design 3-to-8 decoder (a) layout (b) outputs nanotechnology qca-based sub-components of processor design and application... 177 algorithm 1: synthesis method of n-to-2n decoder inputs: i=(in−1,in−2,…,i0) where in-1 denote msb and i0 denote lsb line outputs: y=(y0,y1,…,y2 n −1 ) initialize current state: reset all output lines (yp=0 for p=0 to 2n-1) 1. for loop step-1 2. measure q=in−1⋅2n−1+in−2⋅2n−2+⋯+i1.21+ i0.20 3. convert q into decimal step-2 4. measure yq=1 (only one line active) step-3 5. output line y at index q 6. end for 7. return y 4.5. subcomponent d flip-flop the flipflop is used as a memory element, which will store information in the registers that can be used for storing the information. in other words, all flip-flops are sequential circuits. a sequential circuit is highly dependent on the present inputs and past outputs. in the case of flip flops, there are different styles such as the s-r flip flop, j-k flip flop, and d flip flop. this section deals with the design of a d-flip flop using qca technology. the block diagram as shown in fig 10a illustrates the basic operation of the d flip flop using the majority gate. in d-ff design, we have used two and gates at level one and then at the next level we have used an or gate and a not gate in layout design in qca technology as shown in the block diagram of fig 10b. -1 -1 +1 clk d maj-1 maj-2 maj-3 y=q y q 10 0 1 0 1 1 1 0 0 1 1 3 times 1 2 times 0 2 times 1 (a) (b) (c) fig. 10 d flip-flop qca designer (a) majority design (b) layout (c) outputs in the block diagram input to the or gate has been feedback that serves as a memory as is shown in fig. 10a. the complete layout of a d flip flop using the field coupled qca 178 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour technology as seen in fig. 10b. we have used a standard characteristic table of the d flip flop to compare the simulation outputs. we know from the characteristic equation of d flip-flop as qn = d. therefore, the output will be the same as that of the input. the qbar has been the inverted output of qn. the simulation output is presented in fig. 10c. in algorithm 2, we present the synthesis method for d-flip flop. this circuit synthesis uses three d-ffs with clocks. if the clock is high in the characteristic table, then data input (d) will go to the output node (q). otherwise, if clk=0, the current value is retained in the next stage. in the case of clock transitions, the output q will change, and the output is measured by the output of the node. 4.6. subcomponent sequential counter by using a single and common clock signal, multiple flip flops are triggered simultaneously in sequential designs. the flip flops are triggered simultaneously because a single and common clock signal is used to trigger them all. this type of counter counts binary values between 0 and 7. counting sequences in this program ranges from 0 to 7. counting seven times resets this counter's logic and it returns to the first state after one more count. in fig 11, we have shown a schematic-level design of a sequence counter using d flip-flops with various logic gates. at the layout level, design a sequence counter as shown in fig. 12. to simulate in qcadesigner, we have used a coplanar cell type and the default settings. fig 13 illustrates the outcomes of the sequential counter. in table 2 the simulation is used to verify the effectiveness of the sequential counter based on the simulation results. the layout design uses only coplanar cells since they provide less delay and more rapid signal processing to the output node. simulation results in fig 12 show that the signal does not degrade at the output node when the polarization output is high. in algorithm 3, we present the sequence counter-synthesis approach. for the sequence counter, we used d-ff with each state of the counter having outputs qa, qb, and qc. as part of the first step, we reset all three states to zero (qa=0, qb=0, and qc=0). in this case, it represents state 000. then based on the truth table as shown in table 2 of algorithm 2: synthesis method of d flip-flop inputs: data input as d and clock as clk outputs: qt+1 and q’t+1 initialize clock signal transitions (positive or negative triggered) step-1 1. determine the next stage using qt+1=q.clk’+d.clk 2. step-2 3. if clk=0 4. qt+1=q #retains its current value 5. else 6. qt+1=d #output takes the value of d step-3 7. observe qt+1 8. end if 9. end for 10. return qt+1 and q’t+1 nanotechnology qca-based sub-components of processor design and application... 179 the sequence counter set the logic as qc toggle on each pulse, qb toggle when qb=1, qa toggle when both qb and qc=1. it is necessary to apply the clock and measure all the states. as a binary representation of the state, we will count from 0 to 7 in terms of binary, as follows: 000,001,010,011,100,101,110,111. ad aq aq bd bq bq cd cq cq bq cq cq bq cq bq )cqbq(aq + cqbqaq aq aq fig. 11 block diagram of sequential counter table 2 truth table of sequential counter the modelling equations of the sequential counter are presented by equations 13, 14, and 15 ad ( )qa qb qc qa qb qc=  + +   (13) bd qb qc qb qc=  +  (14) cd qc= (15) in this section, we discussed how boolean equations have been used to design 3-bit sequence counters. with inputs from a truth table as shown in table 2, the k-map yields the equations given above. as can be seen from fig 13, which is a layout implementation of a 3-bit sequential counter. the connections are inputs to each d flip-flop. the outputs inputs qa qb qc qa+1 qb+1 qc+1 da db dc 0 0 0 0 0 1 0 0 1 0 0 1 0 1 0 0 1 0 0 1 0 0 1 1 0 1 1 0 1 1 1 0 0 1 0 0 1 0 0 1 0 1 1 0 1 1 0 1 1 1 0 1 1 0 1 1 0 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 180 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour equations are given as inputs to flip flops through majority gates. this 3-bit sequence counter is implemented with flip-flops, ands, ors, and ex-ors. coplanar cells are used in layout designs to demonstrate manufacturing feasibility. a layout design consisted of threed flip flops, two or gates, two and gates, and one ex-or gate. this layout design uses a three-input majority gate, which is compact and optimizes the sequence counter. a vector set of inputs is used for simulation in the qca designer using bistable approximation. we can conclude that the layout is working properly based on the functional match of the truth table 2. the complete simulation results are presented in fig 13. algorithm 3: synthesis method of sequence counter inputs: d-input (the next state of the system is determined by d input) outputs: qa, qb, and qc (current state), qa+1, qb+1, and qc+1 (next state) initialize current state: initialize current state 000 to 111, a flip-flop's next state is determined by its d input. qa, qb and qc change state from 000 to 111 start: state declaration of d-input to all three flip-flops 11. for n=0 to 7 loop 12. step-1 13. connect the output of (~qc) dc (right most ff) 14. connect the output of (qb xor qc) db (second right most ff) 15. connect the output of qa(q’b+q’c) + q’a*qb*qc da (left most ff) 16. step-2 17. apply clock and stage change to next state 18. qc toggle on each pulse 19. qb toggle when qb=1 20. qa toggle when both qb and qc=1 21. step-3 22. update all states qa to qc based on current state and d inputs 23. step-4 24. observe all states 000, 001, 010, 011, 100, 101, 110, and 111 25. step-5 26. if state 111 the next clock will reset the state and back to the original state (000) 27. end for 28. return states fig. 12 qca designer layout of 3-bit sequential counter nanotechnology qca-based sub-components of processor design and application... 181 fig. 13 simulation results of sequence counter 4.7. subcomponent of instruction register in the instruction register, instructions are stored that are being executed. in the cpu, it is part of the control unit. memory has been loaded with instructions that are currently being executed or decoded. control signals are produced as outputs that control various processing elements to execute instructions. the instruction register consists of registers for storing inputs and memory elements, and decoders for decoding instructions. after each iteration, the program counter is incremented. mostly, cpus are composed of instruction registers. 4.8. energy dissipation results of the proposed 2-to-4 decoder layout power estimation is a useful parameter for analyzing power-aware designs in nanoscale computing [11]. qca design defines switching power as a change in polarization value as a result of polarity change [12]. tunneling caused unintended leakage of power. the heat generated during computation contributes to thermal power in the ghz frequency range [13]. the authors timler and lent [3] proposed a methodology for estimating power based on the size and dimension of cells. array cells are represented by hamiltonian matrices as shown in equation 16. ,1 1 ,1 1 ( ) 2 2 ( ) 2 2 k k i ij j jt k k i ij j jt e e c f c c h e e c f c c     + +     − − − + −    = =        − − +          (16) in the hamiltonian matrix fi,j represents a geometrical factor with consideration of the interaction between cell number i and j. a cell is represented by ci [3]. the eij symbol represents the electrostatic interaction between electrons situated in two cells i and j as shown in equation (17). 182 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour 4 4 , , 1 10 , , 1 4 i n j m ij n mr i n j m q q e r r  = = = −  (17) there is a measurement of energy at each clock cycle relating to the plank constant and the coherence vector as expressed in equation (18) 2 e h = =   (18) nanocomputing devices require low power dissipation, which increases their performance over long periods [14]. the battery life of a device will be prolonged if the power sources consume less power [17][19]. it is more important to pay attention to the energy factor in the nanocomputing layout to meet the current research trends [20]. when determining the amount of dissipated energy, it is necessary to use two tools, qcadesigner1.4.1 and qcapro. for layout considerations, qcadesigner1.4.1 is being used to implement a 2-to-4 decoder layout. qca pro uses several types of power estimation techniques, including average dissipation, maximum dissipation, minimum dissipation, and leakage dissipation, as shown in table 3. figure 14 shows the thermal layout and polarization map generated by the qcapro to determine the energy dissipation for each cell in the qca layout of the 2-to-4 decoder. table 3 shows the different kinds of energy dissipation that can be generated for layout scenarios by simulating layout and setting kink energy. by using qca-pro, we have estimated the parameters for energy dissipation in 2-to-4 decoders. qcapro has been used to obtain the energy dissipation parameters and thermal map following a successful simulation of the qca design. according to the thermal diagram below, the cell with the most power dissipates the most heat. on the colour scale, black indicates a higher dissipation of energy, while white indicates a lower dissipation of energy. as shown in fig 14, a black cell and red cell indicate very high power dissipation, a yellow cell indicates moderate power dissipation and a white cell indicates the least power dissipation. table 3 energy estimation results for 2-to-4 decoder level 0.5ek (mev) x 10^-2 level 1ek (mev) x 10^-2 level 1.5ek (mev) x 10^-2 [11] new [11] new [11] new max energy dissipation 65.99 45.3 74.43 67.443 86.99 67.9 avg energy dissipation 36.77 23.156 50.95 42.554 67.68 53.596 min energy dissipation 11.10 9.58 29.66 31.35 49.93 39.56 avg leakage energy dissipation 11.78 8.32 30.71 22.77 51.12 37.18 avg switching energy dissipation 24.99 17.25 20.79 12.77 16.55 9.78 nanotechnology qca-based sub-components of processor design and application... 183 fig. 14 thermal layout of 2-to-4 decoder using qcapro tool 5. comparison of performance analysis with existing designs an analysis of the performance of existing designs is provided in this section along with proposed designs of 2-to-4 and 3-to-8 decoders, d-ff, and sequence counter designs. compared to state-of-the-art designs, the proposed design is more compact, has less latency, and occupies less space. the computation between inputs and outputs is fast due to the use of coplanar cells and the minimization of clock zones. an innovative architecture and a few minority gates enable the d-ff design to be compact. qca cells are arranged in this way to result in a small area and no crossover within the sequence counter, which results in less latency and fast computations. coplanar techniques are used in qca to design decoders, d-ffs, and sequence counters using field coupling nanotechnology. as shown in table 4, the proposed 2-to-4 decoder is more compact and optimizes parameters than the existing design, demonstrating superior performance. further, in comparison to the previous studies, the average savings for 2-to-4 decoders are 79.25%,81.57%, 85.71%, and 99.62% in terms of the number of cells, footprint area, latency, and area cost, respectively, when compared to the existing design, in [13] as shown in table 4. similarly, for a 3-to-8 decoder, the average savings are 64.68% and 76.78% in the number of cells, footprint area, and latency, respectively, as compared to existing work in [12] as depicted in table 5. in comparison, the average savings for the proposed d flip-flop are 72.41%, 68.75%, 66.66%, and 96.52 % savings in the number of cells, footprint area, latency, and cost, respectively as compared to prior work in [17] as shown in table 6. there is no crossover in the proposed sequence counter, so it has a low latency and a high processing speed. the performance comparison of the sequence counter is presented in table 7. 184 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour table 4 comparative analysis of 2-to-4 decoder with state-of-the-art work layout in qca number of cells footprint area (µm2) latency cost=area x latency2 [8] 212 0.25 6 9 [9] 296 0.43 11 52.03 [10] 361 0.44 9 35.64 [11] 200 0.22 4 3.52 [12] 270 0.38 7 18.62 [13] 268 0.30 7 14.7 [14] 318 0.50 7 24.5 [16] 87 0.10 2.5 0.625 proposed 56 0.07 1 0.07 % improvement w.r.to [13] 79.2592593 81.57895 85.71429 99.62406 % improvement w.r.to [14] 82.3899371 86 85.71429 99.71429 % improvement w.r.to [16] 35.6321839 30 60 88.8 table 5 comparative analysis of 3-to-8 decoder with state-of-the-art work layout in qca number of cells footprint area (µm2) latency cost=area x latency2 [13] 1076 2.24 [16] 476 0.57 9 46.17 proposed 380 0.52 5.5 15.73 % improvement w.r.to [13] 64.6840149 76.78571 - % improvement w.r.to [16] 20.1680672 8.77193 38.88888889 65.93026 table 6 comparative analysis of d flip-flop with state of artwork layout in qca number of cells footprint area (µm2) latency cost=area x latency2 [17] 116 0.16 3 1.44 [18] 66 0.08 1.5 0.18 design 1 [20] 48 0.05 1 0.05 design 2 [20] 84 0.09 2.75 0.680625 design 3 [20] 84 0.09 2.75 0.680625 design 4 [20] 120 0.14 3.25 1.47875 proposed 39 0.06 1 0.05 % improvement w.r.to [17] 66.3793103 62.5 66.66667 95.83333 % improvement w.r.to [18] 40.9090909 25 33.33333 66.66667 table 7 comparative analysis of sequence counter with state-of-the-art work layout in qca number of cells footprint area (µm2) latency cost=area x latency2 [20] 140 0.16 2 0.64 [21] 616 1.2 5 30 [22] 428 0.48 2 1.92 [23] 238 0.36 2.25 1.8225 [24] 196 0.22 4 3.52 [25] 174 0.20 3 1.8 proposed 288 0.38 3 3.42 nanotechnology qca-based sub-components of processor design and application... 185 6. conclusion and future work in this article, we propose a subcomponent of a processor that optimizes overall efficiency in the field of qca technology field coupling with energy dissipation proof, which is a first in state-of-art work. there are four sub-components that it is intended to target: 2-to-4 decoder, 3-to-8 decoder, d-ff, and sequence counters. sequence counters are important parts of the processor because they count state. this article discusses how the layout is implemented in qca using a coplanar approach with the use of novel algorithms. as per the literature, the coplanar technique can be used to manufacture a device. therefore, keeping these criteria in mind, we have used this technology to implement the layout of a 2-to-4 decoder, 3-to-8 decoder, d-ff, and sequence counters. to verify its correctness, simulations performed using the qcadesigner tool with a nanotechnology approach have been performed concerning this new processor sub-component. using qcadesigner the proposed design has been used to check the correctness of circuits. the proposed structure is compact, the number of cells is low, and the latency is low. iot applications require low-power processors to increase the long run time of the sensor data for computation. a decoder functions as a building block for complex systems such as memory, alu, pla, and microcontrollers. using nanotechnology, the proposed decoder will enable many digital designs to be compacted further. references [1] i̇. taştan, m. karaca and a. yurdakul, "approximate cpu design for iot end-devices with learning capabilities", electronics, vol. 9, no. 1, p. 125, 2020. [2] d. thomas, r. mcpherson, g. paul and j. irvine, "optimizing power consumption of wi-fi for iot devices: an msp430 processor and an esp-03 chip provide a power-efficient solution", ieee consum. electron. mag., vol. 5, no. 4, pp. 92-100, 2016. [3] j. timler and c. s. lent, "power gain and dissipation in quantum-dot cellular automata", j. appl. phys., vol. 91, no. 2, pp. 823-831, 2002. [4] s.-s. ahmadpour, n. j. navimipour, s. kassa, n. k. misra and s. yalcin, "an ultra-efficient design of fault-tolerant 3-input majority gate (ftmg) with an error probability model based on quantumdots", comput. electr. eng., vol. 110, p. 108865, 2023. [5] m. patidar, d. a. kumar, p. william, g. b. loganathan, a. m. billah and g. manikandan, "optimized design and investigation of novel reversible toffoli and peres gates using qca techniques", measurement: sensors, vol. 32, p. 101036, 2024. [6] s. r. kassa, n. k. misra and r. nagaria, "design, synthesis and assessment of qca primitives of 5input majority gate in field-coupled qca nanotechnology", optik, vol. 271, p. 170059, 2022. [7] n. k. misra, b. sen and s. wairya, "novel conservative reversible error control circuits based on molecular qca", int. j. comput. appl. technol., vol. 56, no. 1, pp. 1-17, 2017. [8] m. kumar and t. n. sasamal, "an optimal design of 2-to-4 decoder circuit in coplanar quantum-dot cellular automata", energy procedia, vol. 117, pp. 450-457, 2017. [9] m. kianpour and r. sabbaghi-nadooshan, "a novel quantum-dot cellular automata clb of fpga", j. comput. electron., vol. 13, pp. 709-725, 2014. [10] r. jayalakshmi and r. amutha, "an approach towards optimisation of 3 to 8 decoder using 5 input majority gate with coplanar crossing in quantum dot cellular automata", aip conference proceedings, vol. 1966, no. 1, p. 020039, may 2018. [11] r. sherizadeh and n. j. navimipour, "designing a 2-to-4 decoder on nanoscale based on quantum-dot cellular automata for energy dissipation improving", optik, vol. 158, pp. 477-489, 2018. [12] m. kianpour and r. sabbaghi-nadooshan, "a novel modular decoder implementation in quantum-dot cellular automata (qca)", in proceedings of the 2011 international conference on nanoscience, technology and societal implications, dec. 2011, pp. 1-5. 186 n. k. misra, n. pathak, b. k. bhoi, s.-s. ahmadpour, s. r. kassa, n. j. navimipour [13] m. kianpour and r. sabbaghi-nadooshan, "a conventional design and simulation for clb implementation of an fpga quantum-dot cellular automata", microprocess. microsyst., vol. 38, no. 8, pp. 1046-1062, 2014. [14] t. lantz and e. peskin, "a qca implementation of a configurable logic block for an fpga", in proceedings of the 2006 ieee international conference on reconfigurable computing and fpga's (reconfig 2006), sept. 2006, pp. 1-10. [15] t. lantz, a qca implementation of a look-up table for an fpga, graduate paper, electrical engineering department, rochester institute of technology, 2006. [16] b. k. bhoi, n. k. misra and prity bharti, "cost-effective quantum dot architecture of decoder circuit and its futuristic scope in the nanoelectronics", scientia iranica articles, in press, 2022. [17] x. yang, l. cai and x. zhao, "low power dual-edge triggered flip-flop structure in quantum dot cellular automata", electron. letters, vol. 46, no. 12, pp. 825-826, 2010. [18] a. vetteth, k. walus, v. s. dimitrov and g. a. jullien, "quantum-dot cellular automata of flip-flops", atips laboratory, vol. 2500, pp. 1-5, 2003. [19] s. hashemi and k. navi, "new robust qca d flip flop and memory structures", microelectron. j., vol. 43, no. 12, pp. 929-940, 2012. [20] a. h. majeed, e. alkaldy, m. s. bin zainal and d. bin md nor, "synchronous counter design using novel level sensitive t-ff in qca technology", j. low power electron. appl., vol. 9, no. 3, p. 27, 2019. [21] x. yang, l. cai, x. zhao and n. zhang, "design and simulation of sequential circuits in quantum-dot cellular automata: falling edge-triggered flip-flop and counter study", microelectron. j., vol. 41, no. 1, pp. 56-63, 2010. [22] s. sheikhfaal, k. navi, s. angizi and a. h. navin, "designing high speed sequential circuits by quantum-dot cellular automata: memory cell and counter study", quantum matter, vol. 4, no. 2, pp. 190-197, 2015. [23] s. angizi, m. h. moaiyeri, s. farrokhi, k. navi and n. bagherzadeh, "designing quantum-dot cellular automata counters with energy consumption analysis", microprocess. microsyst., vol. 39, no. 7, pp. 512-520, 2015. [24] m. m. abutaleb, "robust and efficient quantum-dot cellular automata synchronous counters", microelectron. j., vol. 61, pp. 6-14, 2017. [25] z. amirzadeh and m. gholami, "counters designs with minimum number of cells and area in the quantum-dot cellular automata technology," int. j. theor. phys., vol. 58, no. 6, pp. 1758-1775, 2019. [26] k. kaur, a. kaur, y. gulzar and v. gandhi, "unveiling the core of iot: comprehensive review on data security challenges and mitigation strategies", front. comput. sci., vol. 6, p. 1420680, 2024. 6279 facta universitatis series: electronics and energetics vol. 33, no 4, december 2020, pp. 605-616 https://doi.org/10.2298/fuee2004605l © 2020 by university of niš, serbia | creative commons license: cc by-nc-nd computation of per-unit-length internal impedance of a multilayer cylindrical conductor with possible dielectric layers dino lovrić, slavko vujević, ivan krolo university of split, faculty of electrical engineering, mechanical engineering and naval architecture, split, croatia abstract. in this manuscript, a novel method for computation of per-unit-length internal impedance of a cylindrical multilayer conductor with conductive and dielectric layers is presented in detail. in addition to this, formulas for computation of electric and magnetic field distribution throughout the entire multilayer conductor (including dielectric layers) have been derived. the presented formulas for electric and magnetic field in conductive layers have been directly derived from maxwell equations using modified bessel functions. however, electric and magnetic field in dielectric layers has been computed indirectly from the electric and magnetic fields in contiguous conductive layers which reduces the total number of unknowns in the system of equations. displacement currents have been disregarded in both conductive and dielectric layers. this is justifiable if the conductive layers are good conductors. the validity of introducing these approximations is tested in the paper versus a model that takes into account displacement currents in all types of layers. key words: internal impedance, multilayer cylindrical conductor, dielectric layers, conductive layers, modified bessel functions. 1. introduction conductors composed of different types of materials are often used in a number of engineering applications [1,2]. since each material used in the conductor has certain advantages and disadvantages, by carefully combining different types of conductor materials one can obtain a structure in which advantages of one material used negates the disadvantages of another material. however, the resulting multilayer structure becomes more challenging to accurately model. this is for example the case when performing various electromagnetic compatibility analyses [3,4], harmonic and transient analyses of transmission lines [5] as well as harmonic and transient analyses of grounding systems [6,7]. received march 27, 2020; received in revised form may 25, 2020 corresponding author: dino lovrić faculty of electrical engineering, mechanical engineering and naval architecture, r. boskovica 32, 21 000 split, croatia e-mail: dlovric@fesb.hr 606 d. lovrić, s. vujević, i. krolo in order to obtain the distribution of electric and magnetic fields inside the multilayer structure, authors in the available literature mainly utilize a cascade of two-port networks [8-10]. this approach leads to certain numerical instabilities that are inherent to the transfer matrix of the system, where some elements of the matrix tend to infinity for high frequencies even for extra thin layers, which was demonstrated in [11]. in paper [11], however, the authors derive the equations for computation of electric and magnetic field distribution within the multilayer structure directly from maxwell equations and base the solutions on modified bessel functions [12] which have proven to be the most numerically stable choice [13-15]. accurate distribution in all layers is obtained by forming a system of linear equations from boundary conditions which is then easily solved. the formulas are derived to maximize numerical stability and robustness of the proposed algorithm. in the model from [11] all layers of the multilayer conductor are characterized by electrical conductivity, permittivity and permeability, hence both conductive and displacement currents have been taken into account in all types of layers. in this paper, a slightly different approach to model a multilayer structure is proposed and tested. first of all, the multilayer structure consists of two types of layers: conductive layers which consist of materials that are good conductors and dielectric layers, unlike in [11] where the layers are general. the proposed model consists of an arbitrary number of conductive layers where a single dielectric layer can be situated between two conductive layers. secondly, displacement currents have been disregarded in all layers. this is only possible if the conductive layers are made of materials which are good electrical conductors. and thirdly, in the proposed model, the conductive layers are the only layers which contribute to the formation of the system of equations. distribution of electric and magnetic fields in dielectric layers is computed indirectly from the border conditions on contiguous conductive layers. the effect of introducing these simplifications is tested in the numerical examples part of the manuscript. 2. model of the multilayer cylindrical conductor with dielectric layers the multilayer cylindrical conductor analyzed in this paper can have an arbitrary number of conductive layers (m). in addition to this, the model of the multilayer conductor allows the existence of a single dielectric layer between two conductive layers, which means that for a total number of m conductive layers there can be a maximum of m-1 dielectric layers (the last layer of the conductor is a conductive layer). an arbitrary i-th conductive layer is characterized by its internal radius ri in , external radius ri ex , electrical conductivity σi and magnetic permeability μi, whereas each of the dielectric layers is defined by its magnetic permeability µi d and, indirectly, by the external and internal radii of the contiguous conductive layers. electrical permittivity is non-existent in the model since the displacement currents have been disregarded in all layers. all layer materials are considered to be linear, isotropic and the parameters describing them are not frequency dependent. to better illustrate this, fig. 1 depicts the i-th and (i+1)-th conductive layers. the i-th dielectric layer illustrated on fig. 1 is defined by the external radius of the ith conductive layer and the internal radius of the (i+1)-th conductive layer. in the case that the dielectric layer is nonexistent then ri ex = ri+1 in . the developed formulas have been derived in such a way to directly take this case into account without modification. due to simplicity numerical computation of cylindrical conductor internal impedance of a multylayer cylindrical... 607 of the model, to each i-th conductive layer, where i = 1, 2, ..., m-1, an i-th dielectric layer has been joined, which can be an actual dielectric layer or a fictive dielectric layer. the last conductive layer does not have a joined dielectric layer. if the first layer is solid, then r1 in = 0, whereas if it is a tubular, then r1 in ≠ 0. fig. 1 dielectric layer between two conductive layers 3. distribution of electric and magnetic field in conductive and dielectric layers the formulas for the computation of electric and magnetic field inside an arbitrary i-th conductive layer of the multilayer conductor are derived directly from maxwell equations for good conductors. due to axial symmetry, the electric field only has the component in the direction of the conductor current whereas the magnetic field only has the azimuthal component. unlike in paper [11], in this paper, displacement currents have been disregarded in the entire multilayer conductor including dielectric layers due to the fact that they are significantly smaller in relation to conductive currents even for higher frequencies, if the conductive layers can be considered good conductors. the effect of disregarding displacement currents will be tested in the numerical examples section of this paper. the expressions for computation of electric and magnetic field inside an arbitrary i-th conductive layer are derived directly from maxwell equations using modified bessel functions [12] with disregarded displacement currents. for improved numerical stability of the electromagnetic models modified bessel functions have been scaled up/down to produce values of similar order of magnitude thus avoiding any underflow/overflow numerical problems [13-15]: 0 0 1 1( ) exp( ) ( ) ; ( ) exp( ) ( )s s i i i i i ii r r i r i r r i r                 (1) 0 0 1 1( ) exp( ) ( ); ( ) exp( ) ( )s s i i i i i ik r r k r k r r k r               (2) expressions for computation of electric and magnetic field inside an arbitrary i-th conductive layer written using scaled modified bessel functions are: 608 d. lovrić, s. vujević, i. krolo  1 1( ) exp[ ( )] ( ) exp[ ( )]s s ex s s in i tot i i i i i i i ih i c i r r r d k r r r                 (3)  0 0( ) exp[ ( )] ( ) exp[ ( )]s s ex s s intot i i i i i i i i i i i i e c i r r r d k r r r                     (4)  jj iiii         1 4 exp (5) where si0 is the scaled complex-valued modified bessel function of the first kind of order zero, sk0 is the scaled complex-valued modified bessel function of the second kind of order zero, si1 is the scaled complex-valued modified bessel function of the first kind of order one, sk1 is the scaled complex-valued modified bessel function of the second kind of order one, s ic and s id are the unknown scaled complex-valued coefficients for the i-th conductive layer, i is the complex wave propagation constant of the i-th conductive layer, σi is the electrical conductivity of the i-th conductive layer, µi is the magnetic permeability of the i-th conductive layer, ω is the circular frequency of the conductor current, αi is the attenuation constant of the i-th conductive layer, toti represents the phasor of the total multilayer conductor current and r is the distance of the observation point from the axis of the multilayer cylindrical conductor. computation of electric and magnetic field inside a dielectric layer between the i-th and (i+1)-th conductive layers is achieved indirectly, from the values of electric and magnetic fields on the outer edge of the i-th conductive layer. computation of magnetic field at an observation point located inside a dielectric layer between the i-th and (i+1)-th conductive layers is performed using ampere’s law disregarding the displacement currents. the magnetic field intensity in the dielectric layer is integrated along a curve (circle of radius r with the center located on the axis of the conductor) which produces the following equation: enc d i irh 2 (6) where d ih is the magnetic field inside the dielectric layer and enci is the harmonic current enclosed inside the circle of radius r. since the magnetic field on the outer edge of the i-th conductive layer encloses the same amount of harmonic current and can be written as: enc ex i rr i irh ex i   2 (7) by introducing (7) into (6), the following equation is obtained for computation of magnetic field inside a dielectric layer between the i-th and (i+1)-th conductive layers: r r hh ex i rr i d i ex i   (8) as for the computation of electric field inside the dielectric layer between the i-th and (i+1)-th conductive layers, fig. 2 clearly describes how this is achieved. the dash-dotted line represents the axis of the multilayer conductor which lies on the z-axis of the numerical computation of cylindrical conductor internal impedance of a multylayer cylindrical... 609 coordinate system. the black rectangle in the figure represents the curve over which the line integral of the electric field intensity present in the faraday’s law of induction is integrated, the black arrow denoting the positive path of integration as dictated by the right hand rule. fig. 2 computation of electric field inside the dielectric layer between the i-th and (i+1)-th conductive layers the line integral reduces to the following expression since the values of electric field are constant along the integration curve and cancel each other out on parts of the curve perpendicular to the conductor axis: i rr i d i jee ex i   (9) the per-unit-length magnetic flux though the surface bounded by the integration curve depicted on fig. 2 is easily obtained by integrating the magnetic flux density through the surface: ex i ex i rr iex i ex i d i r r d i d ii h r r nrdrh    1 (10) where µi d is the magnetic permeability of the dielectric layer located between the i-th and (i+1)-th conductive layers. by introducing (10) into (9) and rearranging the expression one can obtain the following expression for electric field inside the dielectric layer between the i-th and (i+1)-th conductive layers: ex i ex i rr iex i ex i d i rr i d i h r r nrjee    (11) since the electric and magnetic fields inside dielectric layers are computed indirectly, the number of unknown complex-valued coefficients has been reduced unlike in paper [11] where each layer, be it conductive or dielectric, adds two unknowns to the subsequent system of equations. computation of unknown coefficients slightly varies depending on whether the multilayer conductor is a solid conductor (r1 in = 0) or a tubular conductor (r1 in ≠ 0). the computation of unknown complex-valued coefficients from the boundary conditions is given in appendix a. 610 d. lovrić, s. vujević, i. krolo 4. per-unit-length internal impedance of the multilayer conductor per-unit-length internal impedance of the multilayer conductor with possible dielectric layers where the displacement currents have been disregarded in the entire conductor is computed using the value of electric field on the outer edge of the multilayer conductor using the following expression: exp( ) ex m m r r tot e z z j i      (12) where z is the modulus of the per-unit-length internal impedance of the multilayer conductor and φ is the phase angle of the per-unit-length internal impedance of the multilayer conductor. substituting equation (4) into (12), one obtains the following expression for computation of per-unit-length internal impedance of the multilayer conductor:  0 0( ) ( ) exp[ ( )]s s s s ex inm m m m m m m m m m m z c i r d k r r r                (13) 5. comparison with a model of the multilayer conductor from [11] in paper [11], a model of a multilayer conductor is developed which consists of an arbitrary number of layers which can feature arbitrary electrical and magnetic parameters. this, in fact, means that each layer has its electrical conductivity, permittivity and magnetic permeability, hence conductive and displacement currents have been taken into account in all layers. in this paper, however, a different approach is proposed which totally disregards displacement currents in all layers. in following two examples, the effects of this will be investigated. 5.1. example 1 in the first numerical example the following multilayer conductor with four layers in total is considered: 1. r1 in = 0; r1 ex = 5 mm; σ1 = 1.37 ms/m; μ1 = 1.02·μ0; ε1 = ε0 2. r2 in = 5 mm; r2 ex = 10 mm; σ2 = 59.6 ms/m; μ2 = 0.999994·μ0; ε2 = ε0 3. r3 in = 10 mm; r3 ex = 15 mm; σ3 = 0; μ3 = μ0; ε3 = ε0 4. r4 in = 15 mm; r4 ex = 20 mm; σ4 = 10 ms/m; μ4 = μ0; ε4 = ε0 as can be seen from the previous list, first two layers are conductive layers, the third layer is a dielectric layer, whereas the final layer is a conductive layer. these parameters have been implemented into the model from [11] which takes displacement currents into account in all layers, and into the proposed model where displacement currents have been disregarded. per-unit-length internal impedance is computed for a set of frequencies ranging from very low to very high frequencies. fig. 3 depicts the moduli of the per-unit-length internal impedance for both models, whereas fig. 4 depicts the phase angle of the impedance. as can be observed from both figures the curves coincide throughout the observation interval. the maximum difference between the moduli of per-unit-length internal impedances is numerical computation of cylindrical conductor internal impedance of a multylayer cylindrical... 611 1.0179·10 -10 , whereas the maximum difference between the phase angles of per-unitlength internal impedances is 1.6209·10 -7 . fig. 3 comparison of moduli of per-unit-length internal impedance computed by the model from [11] and the proposed model for the first example fig. 4 comparison of phase angles of per-unit-length internal impedance computed by the model from [11] and the proposed model for the first example 5.2. example 2 in the second numerical example the following multilayer conductor with seven layers in total is considered. a tubular multilayer conductor consisting of four thin conductive layers and three dielectric layers is considered: 1. r1 in = 4; r1 ex = 5 mm; σ1 = 59.6 ms/m; μ1 = 0.999994·μ0; ε1 = ε0 2. r2 in = 5 mm; r2 ex = 7 mm; σ2 = 0; μ2 = μ0; ε2 = ε0 3. r3 in = 7 mm; r3 ex = 8 mm; σ3 = 1.37 ms/m; μ3 = 1.02·μ0; ε3 = ε0 4. r4 in = 8 mm; r4 ex = 10 mm; σ4 = 0; μ4 = μ0; ε4 = ε0 5. r5 in = 10 mm; r5 ex = 11 mm; σ5 = 10 ms/m; μ5 = μ0; ε5 = ε0 6. r6 in = 11 mm; r6 ex = 13 mm; σ6 = 0; μ6 = μ0; ε6 = ε0 7. r7 in = 13 mm; r7 ex = 14 mm; σ7 = 59.6 ms/m; μ7 = 0.999994·μ0; ε7 = ε0 612 d. lovrić, s. vujević, i. krolo these parameters have been implemented into the model from [11] which takes displacement currents into account in all layers, and into the proposed model where displacement currents have been disregarded. per-unit-length internal impedance is computed for a set of frequencies ranging from very low to very high frequencies. fig. 5 depicts the moduli of the per-unit-length internal impedance for both models, whereas fig. 6 depicts the phase angle of the impedance. as can be observed from both figures the curves coincide throughout the observation interval. the maximum difference between the moduli of per-unit-length internal impedances is 1.1872·10 -10 , whereas the maximum difference between the phase angles of per-unit-length internal impedances is 1.7847·10 -4 . fig. 5 comparison of moduli of per-unit-length internal impedance computed by the model from [11] and the proposed model for the second example fig. 6 comparison of phase angles of per-unit-length internal impedance computed by the model from [11] and the proposed model for the second example numerical computation of cylindrical conductor internal impedance of a multylayer cylindrical... 613 5.3. discussion other than the presented two numerical examples, numerous comparisons have been made for different kinds of multilayer conductors and the authors came to the same conclusion. disregarding the displacement currents in both the conductive layers and the dielectric layers introduces a practically insignificant error in the model if the conductive layers are good conductors. furthermore, the number of unknowns in the system of equations is reduced since the dielectric layers are treated differently than in [11] which reduces computation time by approximately 23%. it can also be noted here that the model presented in [11] was tested against similar models available in the literature which are based on a cascade of a set of two-port networks [8-10] and proved equally accurate and far more stable. therefore, by comparing the proposed model to the model presented in [11] one can also validate this proposed model relative to the other models available in literature. 6. conclusion in this paper a model of the multilayer conductor with conductive and dielectric layers is proposed. in the proposed model the effect of totally disregarding displacement currents in both conductive layers and dielectric layers was examined and the authors came to the conclusion that displacement currents have negligible effects on the distribution of electric and magnetic field inside a multilayered conductor even for higher frequency values. in addition to this, the dielectric layers are taken into account indirectly in a way that does not add additional unknown coefficients to the system of linear equations, which reduces computation time. references [1] s. olsen, c. traeholt, a. kuhle, o. tonnesen, m. daumling, and j. ostergaard, "loss and inductance investigations in a 4-layer superconducting prototype cable conductor, " ieee transactions on applied superconductivity, vol. 9, no. 2, pp. 833–836, 1999. [2] v. morgan, "effects of alternating and direct current, power frequency, temperature, and tension on the electrical parameters of acsr conductors, " ieee transactions on power delivery, vol. 18, no. 3, pp. 859–866, 2003. [3] z. zhihua, m. weiming, "ac impedance of an isolated flat conductor," ieee transactions on electromagnetic compatibility, vol. 44, no. 3, pp. 482–486, 2002. [4] w. mingli, f. yu, "numerical calculations of internal impedance of solid and tubular cylindrical conductors under large parameters," iee proceedings generation, transmission and distribution, vol. 151, no. 1, pp. 67–72, 2004. [5] g. a. antonini, a. orlandi, c. r. paul, "internal impedance of conductors of rectangular cross section," ieee transactions on microwave theory and techniques, vol. 47, no. 7, pp. 979–985, 1999. [6] s. vujević, p. sarajčev, d. lovrić, "time-harmonic analysis of grounding system in horizontally stratified multilayer medium," electric power systems research, vol. 83, pp. 28–37, 2011. [7] l. grcev, f. dawalibi, "an electromagnetic model for transients in grounding systems," ieee transactions on power delivery, vol. 5, pp. 1779–1781, 1990. [8] j. a. brandao faria, "a circuit approach for the electromagnetic analysis of inhomogeneous cylindrical structures," progress in electromagnetics research b, vol. 30, pp. 223–238, 2011. [9] j. a. brandao faria, "a matrix approach for the evaluation of the internal impedance of multilayered cylindrical structures," progress in electromagnetics research b, vol. 28, pp. 351–367, 2011. 614 d. lovrić, s. vujević, i. krolo [10] k. kubiczek, m. kampik, "highly accurate and numerically stable matrix computations of the internal impedance of multilayer cylindrical conductors," ieee transactions on electromagnetic compatibility, vol. 62, no. 1, pp. 204–211, 2020. [11] s. vujević, d. lovrić, i. krolo, i. duvnjak, "computation of electric and magnetic field distribution inside a multilayer cylindrical conductor," progress in electromagnetics research m, vol. 88, pp. 53–63, 2020. [12] m. abramowitz, i. a. stegun, handbook of mathematical functions with formulas, graphs, and mathematical tables, new york: dover publications, 1964. [13] s. vujević, d. lovrić, v. boras, "high-accurate numerical computation of internal impedance of cylindrical conductors for complex arguments of arbitrary magnitude", ieee transactions on electromagnetic compatibility, vol. 56, pp. 1431–1438, 2014. [14] s. vujević, d. lovrić, "on the numerical computation of cylindrical conductor internal impedance for complex arguments of large magnitude", facta universitatis series: electronics and energetics, vol. 30, no. 1, pp. 81–91, 2017. [15] d. lovrić, s. vujević, "accurate computation of internal impedance of two-layer cylindrical conductors for arguments of arbitrary magnitude," ieee transactions on electromagnetic compatibility, vol. 60, no. 2, pp. 347–353, 2018. appendix a formation of the system of equations for computing the unknown complex-valued coefficients model of the multilayer cylindrical conductor presented in this paper can have an arbitrary number of conductive layers (m). this means that there are 2∙m unknown scaled complex-valued coefficients s ic and s id (i = 1, 2, ..., m) which one needs to compute in order to know the electric and magnetic field distribution in all layers. unknown scaled complex-valued coefficients are obtained by forming and solving a system of 2∙m linear equations which are derived from the boundary conditions between layers and the boundary conditions on the edges of the multilayer conductor. the first 2∙(m-1) equations in the system of equations are formed from the boundary conditions between layers requiring that the tangential components of electric field intensity and magnetic field intensity are continuous on border between two adjacent layers. the possible existence of a dielectric layer between two conductive layers is taken into account in the following boundary conditions, which are directly derived from equations (9) and (12) where in this case, r is substituted with in ir 1 : 1...,,2,1; 1 1 1     mih r r h in i ex i rriex i in i rri (a1) 1...,,2,1; 1 1 1     mieh r r nrje in i ex i ex i rrirriex i in iex i d irri  (a2) equations (a1-a2) are valid for both cases when the first conductive layer is a solid layer or if it is a tubular layer. numerical computation of cylindrical conductor internal impedance of a multylayer cylindrical... 615 one additional equation, also valid for both cases, is derived from the boundary condition on the outer edge of the multilayer cylindrical conductor: ex m tot rr m r i h ex m    2 (a3) the final equation in the system of equations varies for the cases of solid and tubular cylindrical conductors since it is derived from the innermost edge of the conductor (if it exists). in the case where the first conductive layer is a solid cylindrical conductor, then obviously the internal radius of the first layer equals zero. since modified bessel functions of the second kind tend to infinity if their argument is zero, they must be eliminated in order to preserve the physical validity of results. in this case the final equation in the system of equations for the case of the solid cylindrical conductor is: 01 sd (a4) however, in the case where the first conductive layer is a tubular cylindrical conductor, then the internal radius of the first layer does not equal zero so no singularity issues occur. hence, the boundary condition on the innermost edge of the conductor can be included as the final equation in the system of equations for the tubular cylindrical conductor: 0 1 1   inrr h (a5) by introducing equations for electric and magnetic field described by (1-2) into (a1a5), the following system of 2∙m equations is obtained: equations 1 to 2∙m-2: 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 ( ) ( ) exp[ ( )] ( ) exp[ ( )] ( ) 0 ; 1, 2, ..., 1 s s ex s s ex ex in i i i i i i i i i in s s in ex ini i i i i i iex i in s s in i i i i ex i c i r d k r r r r c i r r r r r d k r i m r                                         (a6) 1 0 1 1 0 1 1 1 0 1 1 1 1 1 ( ) ( ) ( ) ( ) exp[ ( )] ( ) exp[ ( d in s s ex ex s exi i i i i i i i iex i i d in s s ex ex s ex ex ini i i i i i i i i i i iex i i s s ini i i i i i i i i r c i r r n i r r r d k r r n k r r r r c i r r                                                           1 1 1 0 1 1 1 )] ( ) 0 ; 1, 2, ..., 1 ex in i s s ini i i i i i i r d k r i m                    (a7) 616 d. lovrić, s. vujević, i. krolo equation 2∙m-1: 1 1 1 ( ) ( ) exp[ ( )] 2 s s ex s s ex ex in m m m m m m m m m ex m c i r d k r r r r              (a8) equation 2∙m: 1 1 11 1 1 1 1 1 1( ) exp[ ( )] ( ) 0 s s s s in ex in in ic i r r r d k r            (a9) or 01 sd (a10) instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 187 197 doi: 10.2298/fuee1702187n sparse localization of breast tumors using quasi-te polarized antennas  marija nikolić stevanović 1 , jelena dinkić 1 , antonije đorđević 1,2 , jasmin musić 3 , lorenzo crocco 4 1 university of belgrade – school of electrical engineering, belgrade, serbia 2 serbian academy of sciences and arts, belgrade, serbia 3 wipl-d d.o.o., belgrade, serbia 4 institute for the electromagnetic sensing of the environment – national research council, irea-cnr, naples, italy abstract. we develop a three-dimensional (3d) sparse algorithm for localization of breast tumors, using an antenna array and signal processing. assuming that the priorknowledge of the breast tissue distribution is available, we develop a model in which the trans-polarization is fully taken into account. by considering various array configurations, we also investigate the robustness of the algorithm to the inaccuracies in the assumed electromagnetic parameters of the breast. key words: breast imaging, compressive sensing, inverse scattering, microwave imaging 1. introduction in the recent years, there has been a growing interest in microwave medical imaging [1], [2]. compared to the conventional technologies, the main advantages of microwave imaging systems are their portability, low-cost, and non-ionizing radiation. the majority of clinical applications have focused on breast imaging, e.g., [2][5], but lately the efforts have been extended to other modalities such as bone [6] and brain imaging [7][9]. numerous techniques have been proposed for this purpose. some examples are the time-domain beamforming [5], the conjugate gradient approach [10][12], gauss-newton optimization [4], [13], etc. lately, compressive sensing techniques [14], [15] have been used for solving a number of microwave imaging problems [16][21]. compressive sensing (sparse) imaging is known to yield clean and focused images with suppressed artifacts. sparse imaging is particularly suitable for situations in which targets occupy only a small part of the observed domain. typically, this is the case in differential microwave imaging, where received may 15, 2016; received in revised form september 15, 2016 corresponding author: marija nikolić stevanović school of electrical engineering, bulevar kralja aleksandra 73, 11120 belgrade, serbia (e-mail: mnikolic@etf.rs) 188 m. nikolić stevanović, j. dinkić, a. đorđević, j. musić, l. crocco the goal is to locate small changes between consecutive measurements, rather than retrieving the permittivity of the whole investigated domain. examples of differential microwave imaging apparatuses are the wearable breast-cancer detection system [22], [23] and the stroke-finder system [24]. here, we consider the application of the compressive sensing for the three-dimensional (3d) breast-cancer localization. we assume that dipole-like antennas are placed parallel to circles encompassing the breast surface 1 , which is analogous to the transverse electric (te) polarization in the two dimensional (2d) geometry. this is in contrast to the usual approach in which the antennas are parallel to each other, as in the case of transverse magnetic polarization (tm). however, one must consider a full 3d model in which all field components are taken into account, unlike in the quasi-tm measurement configuration. assuming that variations of the tissue parameters (due to the possible tumor presence) between two measurements are small, it is possible to linearize the scattering equations. however, it is still necessary to compute 3d (dyadic) green's functions, as well as the approximate field inside the breast. for this purpose, we assume to have a prior knowledge of the healthy breast tissue parameters. we also investigate the robustness of the algorithm against the errors in the tissue permittivity. by combining the obtained results in a particular way, we suppress false targets caused by the parameter ambiguity. (a) (b) fig. 1 (a) measurement model and (b) sketch of 3d grid used in sparse processing the organization of the paper is as follows. in the section ii, we describe the electromagnetic model. in section iii, we develop the sparse algorithm. in section iv, we detail the inhomogeneous breast phantom that was used in simulations. finally, in section v, we provide some numerical results. 1 in clinical examinations, the patient typically lies in prone position, with breasts pointing downwards, inside the imaging system. hence, the field radiated by the array is horizontally polarized. sparse localization of breast tumors using quasi-te polarized antennas 189 2. measurement model we consider the measurement scenario depicted in fig. 1(a). an unknown target or lesion (illustrated as an elliptic inclusion) is located inside the non-magnetic inhomogeneous breast tissue. to determine the location of the target, we use an antenna array placed around the breast in the vicinity of the skin. according to the coordinate system given in fig. 1, the antennas are parallel to the yz plane, i.e., parallel to the chest wall. for simplicity, we show only two antennas: a transmitter, located at ri, and a receiver, located at rj. we define the scattered field as s b( ) ( ) ( ) ε r ε r ε r , (1) where e(r) and eb(r) are the electric field vectors, measured at the field point r, when the target is inside the breast and when there is no target (healthy breast), respectively. using the volume equivalence principle [24], the scattered field may be expressed as b bs eq b( ) ( , ') ( ') d ( , ') j ( ( ') ( ')) ( ') d v v v v       ε r g r r j r g r r r r e r , (2) where r' is the source position vector, b ( , ')g r r is the dyadic background green's function, jeq(r') is the equivalent current density vector, e(r') is the total field inside the breast, b is the permittivity of the healthy breast,  is the permittivity of the target (  b), and v is the breast volume. if the target is electrically small, (2) becomes bs b( ) j ( ( ')) ( , ) ( ) v   ε r r g r t e t , (3) where t is the target position vector and v is its volume. supposing that the target is a weak scatterer, we have bs b b( ) j ( ) ( , ) ( ) v   ε r g r t e t , (4) where b ( ) ( )e t e t is the background electric field. we express the background field in terms of 3d green's function as a bb ( ) ( , ) ( )d l i ε t g t l l l , (5) where l is the source vector, i is the current of the transmitting antenna, and la is the antenna length. assuming that the antennas are electrically short dipoles (without top loadings), the current distribution is approximately triangular, i.e., i(l) = i0(1  l/h), |l|  h, where i0 is the current at the port of the dipole, h is the length of the dipole arm, and l is the local coordinate. using this approximation, (5) becomes a b bb 0( ) ( , ) ( ) d ( , )i i i l i i   ε t g t r l l g t r h , hi h , (6) where ri is the location of the transmitter and hi is the vector in the direction of the current, parallel to the dipole axis. hence, the scattered field at the receiver is b bs b 0( , ) j ( ) ( , ) ( , )j i j i i i v    ε r r g r t g t r h , (7) where rj is the location of the jth receiver. due to the reciprocity, i.e., t b b( , ) ( , )g r t g t r , 190 m. nikolić stevanović, j. dinkić, a. đorđević, j. musić, l. crocco t b bs b 0( , ) j ( )( ( , )) ( , )j i j i i v    ε r r g t r g t r h . (8) in our case, both the transmitting and receiving antennas are parallel to the yz plane. hence, the scattered field at the location of the jth antenna, when the ith antenna is transmitting, is s ( , ) ( , ) ( , ) ( , ) ( , ) ( , ) 0 ( , ) ( , ) ( , ) ( , ) ( , ) ( , ) ( , ) cos ( , ) ( , ) ( , ) ( , ) ( , ) ( , ) s xx j yx j zx j xx i xy i xz i j i xy j yy j zy j yx i yy i yz i i xz j yz j zz j zx i zy i zz i g g g g g g k g g g g g g g g g g g g                      t r t r t r t r t r t r ε r r t r t r t r t r t r t r t r t r t r t r t r t r in i          ,(9) where b 0j ( )k i h v    , (cos sin )i i y i zh   h i i , and i is the angle defined in fig. 1(a). in the expanded form, (9) is , 11 12 , 21 22 ( , ) cos ( , ) sin s y j i i s z j i i e g g k e g g                r r r r , (10) 11 ( ( , ) ( , ) ( , ) ( , ) ( , ) ( , ))xy j xy i yy j yy i zy j zy ig g g g g g g  t r t r t r t r t r t r , (11) 12 ( ( , ) ( , ) ( , ) ( , ) ( , ) ( , ))xy j xz i yy j yz i zy j zz ig g g g g g g  t r t r t r t r t r t r , (12) 21 ( ( , ) ( , ) ( , ) ( , ) ( , ) ( , ))xz j xy i yz j yy i zz j zy ig g g g g g g  t r t r t r t r t r t r , (13) 22 ( ( , ) ( , ) ( , ) ( , ) ( , ) ( , ))xz j xz i yz j yz i zz j zz ig g g g g g g  t r t r t r t r t r t r . (14) finally, the induced voltage at the jth antenna, due to the scattering from the target, is s( , )j i jv   r r e h , (cos sin )j j y j zh   h i i , (15) where j is the angle defined in fig. 1(a). 3. sparse model we search for the target on a uniform 3d grid inside the breast, as shown in fig. 1(b). assuming that there is a target at each node, we derive an approximate linear model cge ii  , (16)   t 1 1 ( , ) ( , )i i m i m v v  e r r r r , (17) 11 1 1 1 1 1 1 ( , ; ) ( , ; ) ( , ; ) ( , ; ) i n n i i m m i mn m n i m n g g g g            r t r r t r g r t r r t r , (18)  t 11   nncc c , (19) where ei is the vector of the received signals when the ith antenna is transmitting, gi is the corresponding system matrix, and c is the unknown vector whose elements are proportional to the permittivity difference, as defined in (7), for each grid node. an element of the system matrix is sparse localization of breast tumors using quasi-te polarized antennas 191 11 12 21 22 ( , ; ) ( ( , , )cos ( , , )sin )cos ( ( , , )cos ( , , )sin )sin , 1 , 1 jk j k i j i k i j i k i j j i k i j i k i j g g g g g k n j m                r t r r r t r r t r r t r r t , (20) where kt is the position of the kth grid node, n is the size of the grid, and m is the total number of receiving antennas (only ith antenna is transmitting). we combine the measurements related to different transmissions into one set of equations as gce  , (21) where the stacked measurement vector is            me e e  1 , (22) and the aggregated system matrix is            mg g g  1 . (23) under the assumption that the target occupies only a few grid nodes, we apply the 1l regularization to emphasize the sparsity of the solution vector c , 2 2 1 ˆ min{|| || || || }   c c e gc c . (24) here, ĉ is the estimated coefficient vector and  is the regularization parameter. to solve (26), we use the cvx package [26], [27]. we compute the regularization parameter, which balances between the data fidelity and the solution sparsity using the l-curve method [28]. we also investigate a different sparse scheme in which the system matrix and the measurement vector are associated with a subset of m transmissions. namely, we jointly process the data corresponding to a few transmitting antennas. as before, we assume that one transmitter is active at a time. in this case, the measurement vector and the system matrix are obtained from (24) and (25) by keeping ei and gi, i = 1,...,m, related to the desired transmitters. the final image is obtained by superimposing partial images (i.e., estimated coefficient vectors) associated with different groups of transmitters. 4. brest phantom in our investigations, we used an inhomogeneous breast model (breast id: 012204) provided by the uwcem numerical breast phantom repository [29], [30]. this repository contains a number of anatomically-realistic breast phantoms derived from the magnetic resonance imaging (mri). to make the model suitable for the electromagnetic analysis, we decreased its resolution by averaging the electromagnetic parameters of the groups of 101010  voxels of the original distribution. the resolution of the resulting model was 5 mm and the operating frequency was f = 1ghz. in addition [31], we divided the 192 m. nikolić stevanović, j. dinkić, a. đorđević, j. musić, l. crocco obtained continuous range of permittivity (r) and conductivity () into 8 domains with the constant parameters defined in table 1. the relative complex permittivity was defined as  = r  j/(0), where the imaginary part of the complex permittivity, /(0), takes into account all dielectric losses (polarization and conductive), as in [32]. besides the true values of the permittivities, table 1 also shows these values altered for 10%. approximately, the domain #1 corresponds to the fatty region, the domains #2–4 belong to the transitional tissue, the domains #5–7 correspond to the fibro-glandular tissue, and the domain #8 is skin. we included the tumor by changing the parameters of one voxel. its parameters are given in the 9th column of table 1. fig. 2 shows the boundaries of the domains, in the order of appearance given in table 1. table 1 permittivities of homogeneous domains in breast phantom domain 1 2 3 4 5 6 7 8 9 r 5.5 15 24 32 42 51 60 39 56 r (10%) 6.05 16.5 21.60 28.8 46.2 56.1 66.0 39 56  [s/m] 0.06 0.21 0.36 0.49 0.68 0.93 1.28 0.9 1 domain 1 domain 2 domain 3 domain 4 domain 5 domain 6 domain 7 domain 8 tumor fig. 2 different tissues (domains) defined in table 1 5. numerical results in our numerical simulations, we used an array of m = 60 horizontal (quasi-te polarized) dipoles placed around the breast surface. as illustrated in fig. 3(a), the dipoles were uniformly distributed along three circular contours. the radii of the contours were 7.8 cm, 8 cm, and sparse localization of breast tumors using quasi-te polarized antennas 193 8.3 cm. the corresponding distances of the centers of the contours from the nipple region, along the x-axes, were 5.8 cm, 8.3 cm, and 11.3 cm, respectively. the operating frequency was f = 1 ghz. the length of the dipoles was 2h = 2 cm. to compute the response of the array and the 3d green's functions, we used the software wipl-d pro [33]. we supposed that the induced signal in the jth antenna, when the ith antenna is transmitting, is proportional to the mutual impedance between those two antennas, i.e., v(ri,rj)  zi j. by adding white gaussian noise, we corrupted the measurement vector. in fig. 3(b), red lines denote the search space consisting of nx = 6 horizontal cuts. in each cut, the number of the grid nodes was ny  nz, ny = 32, nz = 32. the corresponding steps along the coordinate axes were x  9 mm and y  z  4.5 mm. the blue lines in fig. 3(b) indicate the antenna positions. (a) (b) fig. 3 (a) antenna array and (b) search space represented by red lines (numbers indicate different cuts) 5.1. ideal case first, we considered the case in which we have a perfect knowledge of the breast tissue. we assumed that all m = 60 antennas were receiving and every fourth antenna was transmitting (one at a time). fig. 4 shows the localization result in the cut #3, which was the closest to the target. we simultaneously processed all 6 cuts, as defined in fig. 3(b). the adopted signal-to-noise ratio was snr = 10 db. the true position of the scatterer was denoted by a red square marker. the elements of the solution vector in all other planes were zero. the regularization coefficient corresponded to the knee of the l-curve. cut #3 fig. 4 ideal case: target image computed for snr = 10 db 194 m. nikolić stevanović, j. dinkić, a. đorđević, j. musić, l. crocco 5.2. incomplete knowledge of dielectric properties we investigated the robustness of the algorithm against the ambiguity in the breast tissue parameters. in table 1, we show the permittivity values altered with respect to their adopted values for about 10 %. the experimental setup was the same as in the ideal case. the adopted snr was 10 db. instead of considering all available data simultaneously, we jointly processed the measured signals associated with groups of adjacent transmitters. again, we assumed that one transmitter was active at a time. in fig. 5(a), we give an example of such a group consisting of 4  2 transmitters. the receiving array comprised all antennas. hence, the corresponding system matrix, as defined by (23), consisted of mnhnv  n elements, where nh refers to the number of the transmitters in the horizontal direction and nv refers to the number of the transmitters in the vertical direction. we shifted the position of the transmitting array for about knh / 2 elements in the horizontal direction and lnv / 2 elements in the vertical direction, where k,l = 0, 1... . fig. 5(b) illustrates the position of the shifted array for k = l = 1. we obtained the final image by superimposing the partial results obtained using different positions of the transmitting array. (a) (b) fig. 5 example of the transmitting array in (a) its first position and (b) shifted position fig. 6 and fig. 7 show the imaging result for nh = 4 and nv = 2; and for nh = 5 and nv = 2, respectively. in both cases, the location of the tumor was correct in the yz plane (horizontal). in the direction of x-axis, there was an error of about 1 cm. the results in other cuts are several orders of magnitudes smaller and they are caused by tissue ambiguity (i.e., false targets). numerical investigations showed that the positions of these artifacts varied for different values of nh. in contrast, the location of the tumor did not change. this dissimilar behavior may be explained by a point-target nature of the tumor as opposed to the distributed nature of the tissue errors. sparse localization of breast tumors using quasi-te polarized antennas 195 cut #1 cut #2 cut #3 cut #4 cut #5 cut #6 fig. 6 sparse imaging results obtained for nh = 4 and nv = 2 cut #1 cut #2 cut #3 cut #4 cut #5 cut #6 fig. 7 sparse imaging results obtained for nh = 5 and nv = 2 6. conclusion we have proposed a 3d sparsity-based algorithm for differential microwave imaging of tumors inside a known inhomogeneous breast tissue. in contrast to the usual approach available in the literature, we have developed a model in which the trans-polarization due to the inhomogeneous breast tissue was fully taken into account. to check the robustness of the algorithm, we have considered the cases in which the breast tissue was only partially known. to reveal the true position of the tumor and suppress false targets, we applied the sparse processing scheme on different subarrays. 196 m. nikolić stevanović, j. dinkić, a. đorđević, j. musić, l. crocco acknowledgement: this work was supported by the serbian ministry of science and education under the grant tr32005 and by the cost action td1301, mimed. references [1] s. semenov, "microwave tomography: review of the progress towards clinical applications", phil. trans. r. soc. a, vol. 367, pp. 3021–3042, 2009. [2] a. m. hassan, m. el-shenawee, "review of electromagnetic techniques for breast cancer detection", ieee rev. biomed. eng., vol. 4, pp. 103–118, 2011. [3] p. m. meaney, m. w. fanning, t. raynolds, c. j. fox, q. q. fang, c. a. kogel, s. p. poplack, and k. d. paulsen, "initial clinical experience with microwave breast imaging in women with normal mammography", acad. radiol., vol. 14, no. 2, pp. 207–218, february 2007. [4] s. p. poplack, k. d. paulsen, a. hartov, p. m. meaney, b. w. pogue, t. tosteson, m. grove, s. soho, and w.wells, "electromagnetic breast imaging-pilot results in women with abnormal mammography", radiology, vol. 243, pp. 350–359, 2007. [5] m. klemm, j. leendertz, a. w. preece, m. shere, i. j. craddock, and r. benjamin, "clinical experience of breast cancer imaging using ultrawideband microwave radar system at bristol", in proceedings of the ieee ap-s int. symp., toronto, on, canada, 2010, vol. 501.10. [6] p. m. meaney, d. goodwin, a. h. golnabi, t. zhou, m. pallone, s. d. geimer, g. bruke, and k. d. paulsen, "clinical microwave tomographic imaging of the calcaneus: a first-in-human case study of two subjects", ieee trans. biomed. eng., vol. 59, no. 12, pp. 3304–3313, december 2012. [7] i. s. karanasiou, n. k. uzunoglu, and c. c. papageorgiou, "towards functional noninvasive imaging of excitable tissues inside the human body using focused microwave radiometry", ieee trans. microw. theory techn., vol. 52, no. 8, pp. 1898–1908, august 2004. [8] a. fhager and m. persson, "a microwave measurement system for stroke detection", in proceedings of the antennas and propagation conference (lapc), loughborough, uk, 2011. pp. 14–15. [9] r. scapaticci, l. di donato, i. catapano, and l. crocco, "a feasibility study on microwave imaging for brain stroke monitoring", progress in electromagnetics research b, vol. 40, pp. 305–324, 2012. [10] c. gilmore, a. abubakar, w. hu, t.m. habashy, and p. m. van den berg, "microwave biomedical data inversion using the finite-difference contrast source inversion method", ieee trans. antennas propag., vol. 57, no. 5, pp. 1528–1538, may 2009. [11] t. u. r , . a lan rek, a. apar, . a int rk, i. ak man, a nonlinear mi ro ave rea t cancer imaging approach through realistic body–breast modeling", ieee trans. antennas propag., vol. 62, no. 5, pp. 2596–2605, may 2014. [12] r. scapaticci, i. catapano, and l. crocco, "wavelet-based adaptive multiresolution inversion for quantitative microwave imaging of breast tissues", ieee trans. antennas propag., vol. 60, no. 8, pp. 3717–3726, august 2012. [13] j. d. shea, p. kosmas, s. c. hagness, and b. d. van veen, "three-dimensional microwave imaging of realistic numerical breast phantoms via a multiple-frequency inverse scattering technique", med. phys., vol. 37, no. 8, pp. 4210–4226, august 2010. [14] f. gao, b. van veen, and s. c. hagness, "contrast enhanced microwave imaging of breast tumors using sparsity regularization", in proceedings of the ieee antennas propag. soc. int. symp. (aps-ursi), chicago, il, 2012, pp. 8–14. [15] d. winters, b. van veen, and s. c. hagness, "a sparsity regularization approach to the electromagnetic inverse scattering problem", ieee trans. antennas propag., vol. 58, no. 1, pp. 145–154, january 2012. [16] m. nikolic stevanovic, l. crocco, a. djordjevic, and a. nehorai, "higher order sparse microwave imaging of pec scatterers", ieee trans. antennas propag., vol. 64, no. 3, march 2016. [17] m. azghani, p. kosmas, f. marvasti, "microwave medical imaging based on sparsity and an iterative method with adaptive thresholding", ieee trans. med. imag., vol. 34, no. 2, pp. 357–365, february 2015. [18] m. bevacqua, r. scapaticci, "a compressive sensing approach for 3d breast cancer microwave imaging with magnetic nanoparticles as contrast agent", ieee trans. med. imag., vol. 35, no. 2, pp. 665–673, february 2016. sparse localization of breast tumors using quasi-te polarized antennas 197 [19] m. nikolic, j. dinkic, n. milosevic, and b. kolundzija, "sparse localization of tumors inside an inhomogeneous breast", in proceedings of the international conference on electromagnetics in advanced applications (iceaa), torino, it, 2015, pp. 1056–1059. [20] d. m. malioutov, m. cetin, and a. s. willsky, "sparse signal reconstruction perspective for source localization with sensor arrays", ieee trans. signal process., vol. 53, no. 8, pp. 3010–3022, 2005. [21] l. c. potter, e. ertin, j.t. parker, m. cetin, "sparsity and compressed sensing in radar imaging", in proceedings of the ieee, vol. 98, no. 6, pp. 1006–1020, june 2010. [22] e. porter, . wall , . z o , m. popović, an j. d. schwartz, "a flexible broadband antenna and transmission line network for a wearable microwave breast cancer detection system", prog. electromagn. res. lett., vol. 49, pp. 111–118, 2014. [23] e. porter, m. coate an m. popović, an earl lini al t of time-domain microwave radar for breast health monitoring", ieee trans. biomed. eng., vol. 63, no. 3, pp. 530–539, march 2016. [24] r. scapaticci, o. m. bucci, i. catapano, and l. crocco, "differential microwave imaging for brain stroke followup", int. j. antennas propag., vol. 2014, article id 312528, 11 pages, 2014. [25] w.c. chew, waves and fields in inhomogenous media, wiley-ieee press, february 1999. [26] m. grant and s. boyd, cvx: matlab software for disciplined convex programming, http://stanford.edu/ ~boyd/cvx, june 2009. [27] m. grant and s. boyd, graph implementations for non smooth convex programs, recent advances in learning and control (a tribute to m. vidyasagar), v. blondel, s. boyd, and h. kimura, editors, lecture notes in control and information sciences, springer, 2008, pp. 95-110. [28] p. c. an en an d. p. o’lear , "the use of the l-curve in the regularization of discrete ill-posed problems", siam j. sci. comput., vol. 14, no. 6, pp. 1487–1503, 1993. [29] e. zastrow, s. k. davis, m. lazebnik, f. kelcz, b. d. van veen, s. c. hagness, database of 3d gridbased numerical breast phantoms for use in computational electromagnetics simulations. [30] m. lazebnik, l. mccartney, d. popovic, c. b. watkins, m. j. lindstrom, j. harter, s. sewall, a. magliocco, j. h. booske, m. okoniewski, and s. c. hagness, "a large-scale study of the ultrawideband microwave dielectric properties of normal breast tissue obtained from reduction surgeries", phys. med. biol., vol. 52, pp. 2637–2656, april 2007. [31] n. milosevic, m. nikolic, b. kolundzija, j. music, "numerical heterogeneous breast phantoms with different resolutions", in proceedings of the eucap, lisbon, pt, 2015. [32] a. djor jević, d. olćan, m. stojilović, m. pavlović, . kol n žija, d. tošić, "causal models of electrically large and lossy dielectric bodies", facta universitatis, series: electronics and energetics, vol. 27, no. 2, pp. 221–234, june 2014. [33] http://www.wipl-d.com/ http://ieeexplore.ieee.org/xpl/recentissue.jsp?punumber=5 http://www.wipl-d.com/ instruction facta universitatis series: electronics and energetics vol. 30, no 2, june 2017, pp. 199 208 doi: 10.2298/fuee1702199d a non-intrusive identification of home appliances using active power and harmonic current  srđan đorđević, marko dimitrijević, vančo litovski university of niš, faculty of electronic engineering, niš, serbia abstract. in recent years, research on non-intrusive load monitoring has become very popular since it allows customers to better manage their energy use and reduce electrical consumption. the traditional non-intrusive load monitoring method, which uses active and reactive power as signatures, has poor performance in detecting small non-linear loads. this drawback has become more prominent because the use of nonlinear appliances has increased continuously during the last decades. to address this problem, we propose a nilm method that utilizes harmonic current in combination with the changes of real power. the advantages of the proposed method with respect to the existing frequency analysis based nilm methods are lower computational complexity and the use of only one feature to characterize the harmonic content of the current. key words: non-intrusive load monitoring (nilm), load signature, energy management 1. introduction the rapid growth in energy consumption and carbon emissions has generated interest in the deployment of efficient household energy management system. the system for home energy management enables consumers to control and manage their electrical consumption, according to the information of individual load consumptions [1, 2]. therefore, in order to significantly reduce waste in residential energy consumption, it is necessary to use load monitoring system. appliance load monitoring is not only useful in energy saving, but also in fault detection systems, remote monitoring systems and some residential applications such as in-home activity tracking [3, 4]. there are two methods for monitoring individual electrical loads: 1. distributed direct sensing or intrusive load monitoring and 2. single point sensing or non-intrusive load monitoring (nilm). the first approach requires complex instrumentation system to measure energy consumption of each device separately. this solution has many practical disadvantages such as: complex installation, low scalability, low reliability as well as high cost due to a large number of sensors and communication devices. a more practical solution for received june 3, 2016; received in revised form september 1, 2016 corresponding author: srđan đorđević faculty of electronic engineering, aleksandra medvedeva 14, 18000 niš, serbia (e-mail: srdjan.djordjevic@elfak.ni.ac.rs) 200 s. đorđević, m. dimitrijević, v. litovski monitoring individual loads is nilm, that use only one sensor attached to the electric utility service entry. this method dis-aggregates the whole-house energy consumption into energy usage of individual appliances. the most commonly used steady-state nilm method detects operation of individual loads from the step changes in real and reactive power [5]. this method works well for devices with two states of operation, but it is not suitable for extracting variable-loads and multi-state appliances. another problem is the detection of loads that consume similar steady-state power since their two dimensional signatures overlap in the p-q plane. it is especially difficult to distinguish low-power loads with small power consumption (lower than 150 w). the current trends in electricity consumption show a rapid increase in the type and number of household appliances [6], most of which are not predictable or controlled. consequently, the task of load identification becomes more challenging. an additional problem is the inability of previous nilm algorithms to detect low-power devices, which have become more numerous and diverse. a solution to this problem has been proposed in [7], through the use of the circuit-level instead of whole-house power measurements. this approach represents a trade-off between intrusive and non-intrusive load monitoring, which facilitate load disaggregation by the expense of the cost and complexity. in order to improve performance in detecting small non-linear loads several nilm methods have used current harmonics [8-11]. however, most of these techniques are not practical due to calculation of many harmonics in real time [12, 13]. in our previous works [14, 15], we have proposed the use of distortion power for appliance identification. the aim of these papers was to improve identification of small nonlinear loads by the analysis of three electrical quantities (active, reactive and distortion power), which is easy to obtain from metering devices. however, this method does not take into account the fact that the time variations of the voltage harmonics make the load identification imprecise. namely, distortion power, which is used to characterize the nonlinear loads, mainly consists of cross-products of voltage and current harmonics of different orders. in this work we suggest the use of harmonic current instead of distorted power in order to improve the appliance disaggregation accuracy. this paper proposes a nilm method based on the analysis of steady-state values of harmonic current and active power. the proposed approach uses only one feature to characterize the harmonic content of the current, as opposed to the previous nilm methods. we explore the effectiveness of the proposed electrical quantities in recognizing lowpower loads. the remainder of the paper is organized as follows: in the next section we review some of the commonly used nilm techniques. the proposed method for load monitoring is discussed in section 3. section 4 presents the results of the application of the proposed nilm method on low power appliances. the conclusion is reported in section 5. 2. background the main stages of an nilm system are: a) the data acquisition b) the feature extraction and event detection c) the load identification. the purpose of the first stage is to gather the voltage and current measurements at an adequate sampling rate. the sampling frequency depends on the electrical characteristic used by the nilm method. generally, a nonintrusive identification of home appliances using active power and harmonic current 201 the data acquisition for nilm can be classified in terms of the sampling rate as: high frequency and low frequency. the next step is to transform the raw data into a specific appliance feature, or load signature. in order to extract features it is necessary to first detect load events like switching on/off or changing state. the load signature can be derived from the steady-state signal component, which can be expressed as a finite number of sinusoids, or from the transient signal component [16-18]. dong et. al. [19] studied non-intrusive extraction of load signatures and demonstrated their technique by using the smart meter data. the final step is the estimation of the appliance-specific states by using machine learning algorithms. there are two categories of load identification algorithms: supervised learning algorithm, which requires a training procedure, and unsupervised learning algorithms, which is able to directly recognize appliance operations. the residential nilm systems usually use steady-states instead of transients load signatures. transient load monitoring systems are not suitable for residential energy disaggregation since they require expensive hardware (high-frequency energy meters) that makes them impractical. in addition, turn-off events are very difficult to detect with transient signatures. recently, wang et. al. [20] developed a new nilm method which is not limited to transient or steady state analysis and categorize the appliances according to working style. the most common method of nilm uses power measurement to characterize appliance [5]. since the load signature of this method involves two electrical parameters, the steadystate changes in active and reactive power, they are mapped to a two-dimensional signature space (p-q plane). an important characteristic of pq signature is that it can be obtained by using data from the existing smart meters. the second advantage of the power change method is that it allows automatic identification of on-off appliances. however, the method has some limitations. at first, it requires step changes in power level to identify loads. therefore, there is a problem in detecting devices with variable power draw. despite the fact that steady-state power level between two events of on-off devices is easy to detect, the method has a problem to distinguish these devices in some cases. false positive may occur when two or more devices change state at nearly the same time, since the sum of power consumptions of these devices may be associated with another load. furthermore, different loads may exhibit overlapping of signatures in pq signature space, which become more prominent as the number of loads increases. 3. non-intrusive load monitoring by using harmonic current and active power nowadays, the number of non-linear household loads, such as energy efficient variable speed drives and switched mode power supplies, increases continuously. since the nonlinear loads inject harmonic currents into the power system, it is promising to use harmonics as a load signature in the residential nilm. this kind of methods requires spectral analysis as opposed to the power based methods which use features directly derived from the raw current and voltage waveforms. due to the presence of many linear loads in the residential buildings, it is not possible to use harmonic content as a unique load signature for load disaggregation. harmonic currents may be also caused by transients during shutdown and turn on events. the harmonic content of the transient waveforms varies with time and may have frequencies that are not related to the fundamental frequency. some of the nilm methods are based on the 202 s. đorđević, m. dimitrijević, v. litovski frequency analysis of the transient waveforms [17, 18]. the problem with this approach is that transient detection is prone to errors. to overcome this problem some researchers have proposed the use of steady-state current harmonics to characterize the nonlinear loads [10, 11]. the online calculation of many current harmonics implies higher computational requirements [12]. consequently, a practical harmonic based nilm system must use a limited number of harmonics. to solve this problem many researchers have proposed various nilm methods. cole and alike [21] have developed the first harmonic based nilm method which is based on a calculation of first eight odd harmonics. the authors of [22] have proposed the use of only 2nd and 3nd harmonic, while the authors of [23] have considered first sixteen odd harmonics. recently, several authors [24] have proposed a method which used the first three odd harmonics. the nonlinear loads can be characterized not only by harmonic components in the current signal, but also by the other quantities like total harmonic distortion of current, distortion power, harmonic current, crest factor, distortion power factor. the focus of our research is on the identification of small non-linear loads. in the case when large loads are active smaller loads are difficult to identify due to the limited resolution of the data acquisition. therefore, we need to consider the load signature that enables identification of low consuming appliance in the presence of high power devices. in a typical household most of the existing load is still linear while nonlinear loads are small. therefore the influence of small loads on the on the fundamental current harmonic is negligible. each of the aforementioned electrical parameters (thdi, d, dpf, ki, and ih) can be expressed in terms of the current and voltage harmonics. according to these equations only harmonic current, as opposed to the other quantities, is not mathematically related to the fundamental current harmonic. therefore, we propose a novel approach in which non-linear loads are characterized by steady state harmonic current. the proposed method utilizes harmonic current in combination with the changes of real power. the current signal can be represented as the sum of the fundamental and harmonic components, as follows:     2 22 1 2 0 22 1 2 0 2 h hhrms iiiiiii (1) where: i is a total rms value of the current, i1 is the rms value of the fundamental harmonic, i0 is the dc component of the current, ih is the rms value of the h-th harmonic component of the current signal. therefore, harmonic current can be simply expressed in terms of the effective current and fundamental harmonic of the current as follows: 2 0 2 1 2 iiii rmsh  (2) the effective current is usually calculated by using the root mean square method as:    n n rms ni n i 1 2][ 1 (3) where: n is the sample index, i[n] is the current value measured at sampling point n and n is the number of samples taken during a full-wave of the current. a nonintrusive identification of home appliances using active power and harmonic current 203 the standard method for calculation of the harmonic current and voltages is based on the use of the discrete fourier transform (dft). this method works well for estimation of periodic signal in stady state. the rms value of the fundamental harmonic can be calculated using _ _ 2 2 1 1 1 re{ } im{ } 2 i i i   (4) where _ 1i is the first harmonic current obtained by the discrete fourier transform as:     n n n n j eni n i 1 2_ 1 ][ 1  (5) according to (1-3), the calculation of the harmonic current is less computationally demanding than the calculation of harmonics. therefore, we can claim that proposed method is more computationally effective than other approaches that use harmonic analysis. to the best of our knowledge, the computational complexity of the harmonic-based nilm algorithms were not explicitly stated by researches. however, the computational cost of these methods can be determined according to the algorithm used to calculate dft (discrete fourier transform) and the number of frequencies required by the method. in the most nilm methods steady-state current harmonics are obtained by applying fft [11, 21 ,22]. however, when only a few dft frequencies are needed, as in the proposed method, it is more suitable to use the goertzel's algorithm. the main advantage of the goertzel algorithm over often used fft algorithms is less mathematical operations required for harmonic analysis. goertzel algorithm has linear complexity for n data points and m applications (required harmonics) it is o(mn), while fft algorithms has o(nlog2n) complexity. it is clear that for m